DOE Office of Scientific and Technical Information (OSTI.GOV)

Kim, Jaekyun; Kim, Myung -Gil; Kim, Jaehyun

The success of silicon based high density integrated circuits ignited explosive expansion of microelectronics. Although the inorganic semiconductors have shown superior carrier mobilities for conventional high speed switching devices, the emergence of unconventional applications, such as flexible electronics, highly sensitive photosensors, large area sensor array, and tailored optoelectronics, brought intensive research on next generation electronic materials. The rationally designed multifunctional soft electronic materials, organic and carbon-based semiconductors, are demonstrated with low-cost solution process, exceptional mechanical stability, and on-demand optoelectronic properties. Unfortunately, the industrial implementation of the soft electronic materials has been hindered due to lack of scalable fine-patterning methods. Inmore » this report, we demonstrated facile general route for high throughput sub-micron patterning of soft materials, using spatially selective deep-ultraviolet irradiation. For organic and carbon-based materials, the highly energetic photons (e.g. deep-ultraviolet rays) enable direct photo-conversion from conducting/semiconducting to insulating state through molecular dissociation and disordering with spatial resolution down to a sub-μm-scale. As a result, the successful demonstration of organic semiconductor circuitry promise our result proliferate industrial adoption of soft materials for next generation electronics.« less

Dispensing of high concentration Ag nano-particles ink for ultra-low resistivity paper-based writing electronics

PubMed Central

Wang, Fuliang; Mao, Peng; He, Hu

2016-01-01

Paper-based writing electronics has received a lot of interest recently due to its potential applications in flexible electronics. To obtain ultra-low resistivity paper-based writing electronics, we developed a kind of ink with high concentration of Ag Nano-particles (up to 80 wt%), as well as a related dispensing writing system consisting an air compressor machine and a dispenser. Additionally, we also demonstrated the writability and practical application of our proposed ink and writing system. Based on the study on the effect of sintering time and pressure, we found the optimal sintering time and pressure to obtain high quality Ag NPs wires. The electrical conductivity of nano-silver paper-based electronics has been tested using the calculated resistivity. After hot-pressure sintering at 120 °C, 25 MPa pressure for 20 minutes, the resistivity of silver NPs conductive tracks was 3.92 × 10−8 (Ωm), only 2.45 times of bulk silver. The mechanical flexibility of nano-silver paper-based electronics also has been tested. After 1000 bending cycles, the resistivity slightly increased from the initial 4.01 × 10−8 to 5.08 × 10−8 (Ωm). With this proposed ink preparation and writing system, a kind of paper-based writing electronics with ultra-low resistivity and good mechanical flexibility was achieved. PMID:26883558

Imaging of high-angle annular dark-field scanning transmission electron microscopy and observations of GaN-based violet laser diodes.

PubMed

Shiojiri, M; Saijo, H

2006-09-01

The first part of this paper is devoted to physics, to explain high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM) imaging and to interpret why HAADF-STEM imaging is incoherent, instructing a strict definition of interference and coherence of electron waves. Next, we present our recent investigations of InGaN/GaN multiple quantum wells and AlGaN/GaN strained-layer superlattice claddings in GaN-based violet laser diodes, which have been performed by HAADF-STEM and high-resolution field-emission gun scanning electron microscopy.

Antiferroic electronic structure in the nonmagnetic superconducting state of the iron-based superconductors

PubMed Central

Shimojima, Takahiro; Malaeb, Walid; Nakamura, Asuka; Kondo, Takeshi; Kihou, Kunihiro; Lee, Chul-Ho; Iyo, Akira; Eisaki, Hiroshi; Ishida, Shigeyuki; Nakajima, Masamichi; Uchida, Shin-ichi; Ohgushi, Kenya; Ishizaka, Kyoko; Shin, Shik

2017-01-01

A major problem in the field of high-transition temperature (Tc) superconductivity is the identification of the electronic instabilities near superconductivity. It is known that the iron-based superconductors exhibit antiferromagnetic order, which competes with the superconductivity. However, in the nonmagnetic state, there are many aspects of the electronic instabilities that remain unclarified, as represented by the orbital instability and several in-plane anisotropic physical properties. We report a new aspect of the electronic state of the optimally doped iron-based superconductors by using high–energy resolution angle-resolved photoemission spectroscopy. We find spectral evidence for the folded electronic structure suggestive of an antiferroic electronic instability, coexisting with the superconductivity in the nonmagnetic state of Ba1−xKxFe2As2. We further establish a phase diagram showing that the antiferroic electronic structure persists in a large portion of the nonmagnetic phase covering the superconducting dome. These results motivate consideration of a key unknown electronic instability, which is necessary for the achievement of high-Tc superconductivity in the iron-based superconductors. PMID:28875162

Electronic origin of high-temperature superconductivity in single-layer FeSe superconductor.

PubMed

Liu, Defa; Zhang, Wenhao; Mou, Daixiang; He, Junfeng; Ou, Yun-Bo; Wang, Qing-Yan; Li, Zhi; Wang, Lili; Zhao, Lin; He, Shaolong; Peng, Yingying; Liu, Xu; Chen, Chaoyu; Yu, Li; Liu, Guodong; Dong, Xiaoli; Zhang, Jun; Chen, Chuangtian; Xu, Zuyan; Hu, Jiangping; Chen, Xi; Ma, Xucun; Xue, Qikun; Zhou, X J

2012-07-03

The recent discovery of high-temperature superconductivity in iron-based compounds has attracted much attention. How to further increase the superconducting transition temperature (T(c)) and how to understand the superconductivity mechanism are two prominent issues facing the current study of iron-based superconductors. The latest report of high-T(c) superconductivity in a single-layer FeSe is therefore both surprising and significant. Here we present investigations of the electronic structure and superconducting gap of the single-layer FeSe superconductor. Its Fermi surface is distinct from other iron-based superconductors, consisting only of electron-like pockets near the zone corner without indication of any Fermi surface around the zone centre. Nearly isotropic superconducting gap is observed in this strictly two-dimensional system. The temperature dependence of the superconducting gap gives a transition temperature T(c)~ 55 K. These results have established a clear case that such a simple electronic structure is compatible with high-T(c) superconductivity in iron-based superconductors.

High Temperature Pt/Alumina Co-Fired System for 500 C Electronic Packaging Applications

NASA Technical Reports Server (NTRS)

Chen, Liang-Yu; Neudeck, Philip G.; Spry, David J.; Beheim, Glenn M.; Hunter, Gary W.

2015-01-01

Gold thick-film metallization and 96 alumina substrate based prototype packaging system developed for 500C SiC electronics and sensors is briefly reviewed, the needs of improvement are discussed. A high temperature co-fired alumina material system based packaging system composed of 32-pin chip-level package and printed circuit board is discussed for packaging 500C SiC electronics and sensors.

Establishment of design space for high current gain in III-N hot electron transistors

NASA Astrophysics Data System (ADS)

Gupta, Geetak; Ahmadi, Elaheh; Suntrup, Donald J., III; Mishra, Umesh K.

2018-01-01

This paper establishes the design space of III-N hot electron transistors (HETs) for high current gain by designing and fabricating HETs with scaled base thickness. The device structure consists of GaN-based emitter, base and collector regions where emitter and collector barriers are implemented using AlN and InGaN layers, respectively, as polarization-dipoles. Electrons tunnel through the AlN layer to be injected into the base at a high energy where they travel in a quasi-ballistic manner before being collected. Current gain increases from 1 to 3.5 when base thickness is reduced from 7 to 4 nm. The extracted mean free path (λ mfp) is 5.8 nm at estimated injection energy of 1.5 eV.

Diamondoid monolayers as electron emitters

DOEpatents

Yang, Wanli [El Cerrito, CA; Fabbri, Jason D [San Francisco, CA; Melosh, Nicholas A [Menlo Park, CA; Hussain, Zahid [Orinda, CA; Shen, Zhi-Xun [Stanford, CA

2012-04-10

Provided are electron emitters based upon diamondoid monolayers, preferably self-assembled higher diamondoid monolayers. High intensity electron emission has been demonstrated employing such diamondoid monolayers, particularly when the monolayers are comprised of higher diamondoids. The application of such diamondoid monolayers can alter the band structure of substrates, as well as emit monochromatic electrons, and the high intensity electron emissions can also greatly improve the efficiency of field-effect electron emitters as applied to industrial and commercial applications.

Diamondoid monolayers as electron emitters

DOEpatents

Yang, Wanli; Fabbri, Jason D.; Melosh, Nicholas A.; Hussain, Zahid; Shen, Zhi-Xun

2013-10-29

Provided are electron emitters based upon diamondoid monolayers, preferably self-assembled higher diamondoid monolayers. High intensity electron emission has been demonstrated employing such diamondoid monolayers, particularly when the monolayers are comprised of higher diamondoids. The application of such diamondoid monolayers can alter the band structure of substrates, as well as emit monochromatic electrons, and the high intensity electron emissions can also greatly improve the efficiency of field-effect electron emitters as applied to industrial and commercial applications.

AIN-Based Packaging for SiC High-Temperature Electronics

NASA Technical Reports Server (NTRS)

Savrun, Ender

2004-01-01

Packaging made primarily of aluminum nitride has been developed to enclose silicon carbide-based integrated circuits (ICs), including circuits containing SiC-based power diodes, that are capable of operation under conditions more severe than can be withstood by silicon-based integrated circuits. A major objective of this development was to enable packaged SiC electronic circuits to operate continuously at temperatures up to 500 C. AlN-packaged SiC electronic circuits have commercial potential for incorporation into high-power electronic equipment and into sensors that must withstand high temperatures and/or high pressures in diverse applications that include exploration in outer space, well logging, and monitoring of nuclear power systems. This packaging embodies concepts drawn from flip-chip packaging of silicon-based integrated circuits. One or more SiC-based circuit chips are mounted on an aluminum nitride package substrate or sandwiched between two such substrates. Intimate electrical connections between metal conductors on the chip(s) and the metal conductors on external circuits are made by direct bonding to interconnections on the package substrate(s) and/or by use of holes through the package substrate(s). This approach eliminates the need for wire bonds, which have been the most vulnerable links in conventional electronic circuitry in hostile environments. Moreover, the elimination of wire bonds makes it possible to pack chips more densely than was previously possible.

Common electronic origin of superconductivity in (Li,Fe)OHFeSe bulk superconductor and single-layer FeSe/SrTiO3 films.

PubMed

Zhao, Lin; Liang, Aiji; Yuan, Dongna; Hu, Yong; Liu, Defa; Huang, Jianwei; He, Shaolong; Shen, Bing; Xu, Yu; Liu, Xu; Yu, Li; Liu, Guodong; Zhou, Huaxue; Huang, Yulong; Dong, Xiaoli; Zhou, Fang; Liu, Kai; Lu, Zhongyi; Zhao, Zhongxian; Chen, Chuangtian; Xu, Zuyan; Zhou, X J

2016-02-08

The mechanism of high-temperature superconductivity in the iron-based superconductors remains an outstanding issue in condensed matter physics. The electronic structure plays an essential role in dictating superconductivity. Recent revelation of distinct electronic structure and high-temperature superconductivity in the single-layer FeSe/SrTiO3 films provides key information on the role of Fermi surface topology and interface in inducing or enhancing superconductivity. Here we report high-resolution angle-resolved photoemission measurements on the electronic structure and superconducting gap of an FeSe-based superconductor, (Li0.84Fe0.16)OHFe0.98Se, with a Tc at 41 K. We find that this single-phase bulk superconductor shows remarkably similar electronic behaviours to that of the superconducting single-layer FeSe/SrTiO3 films in terms of Fermi surface topology, band structure and the gap symmetry. These observations provide new insights in understanding high-temperature superconductivity in the single-layer FeSe/SrTiO3 films and the mechanism of superconductivity in the bulk iron-based superconductors.

Ultrashort high-brightness pulses from storage rings

NASA Astrophysics Data System (ADS)

Khan, Shaukat

2017-09-01

The brightness of short-wavelength radiation from accelerator-based sources can be increased by coherent emission in which the radiation intensity scales with the number of contributing electrons squared. This requires a microbunched longitudinal electron distribution, which is the case in free-electron lasers. The brightness of light sources based on electron storage rings was steadily improved, but could profit further from coherent emission. The modulation of the electron energy by a continuous-wave laser field may provide steady-state microbunching in the infrared regime. For shorter wavelengths, the energy modulation can be converted into a temporary density modulation by a dispersive chicane. One particular goal is coherent emission from a very short "slice" within an electron bunch in order to produce ultrashort radiation pulses with high brightness.

Fiber-based wearable electronics: a review of materials, fabrication, devices, and applications.

PubMed

Zeng, Wei; Shu, Lin; Li, Qiao; Chen, Song; Wang, Fei; Tao, Xiao-Ming

2014-08-20

Fiber-based structures are highly desirable for wearable electronics that are expected to be light-weight, long-lasting, flexible, and conformable. Many fibrous structures have been manufactured by well-established lost-effective textile processing technologies, normally at ambient conditions. The advancement of nanotechnology has made it feasible to build electronic devices directly on the surface or inside of single fibers, which have typical thickness of several to tens microns. However, imparting electronic functions to porous, highly deformable and three-dimensional fiber assemblies and maintaining them during wear represent great challenges from both views of fundamental understanding and practical implementation. This article attempts to critically review the current state-of-arts with respect to materials, fabrication techniques, and structural design of devices as well as applications of the fiber-based wearable electronic products. In addition, this review elaborates the performance requirements of the fiber-based wearable electronic products, especially regarding the correlation among materials, fiber/textile structures and electronic as well as mechanical functionalities of fiber-based electronic devices. Finally, discussions will be presented regarding to limitations of current materials, fabrication techniques, devices concerning manufacturability and performance as well as scientific understanding that must be improved prior to their wide adoption. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Control of Spin Wave Dynamics in Spatially Twisted Magnetic Structures

DTIC Science & Technology

2017-06-27

realize high-performance spintronic and magnetic storage devices. 15. SUBJECT TERMS nano- electronics , spin, wave, magnetic, multi-functional, device 16... electronics has required us to develop high-performance and multi-functional electronic devices driven with extremely low power consumption...Spintronics”, simultaneously utilizing the charge and the spin of electrons , provides us with solutions to essential problems for semiconductor-based

Characterization of Quantum Efficiency and Robustness of Cesium-Based Photocathodes

DTIC Science & Technology

2010-01-01

photocathodes produce picosecond-pulsed, high- current electron beams for photoinjection applications like free electron lasers . In photoinjectors, a...pulsed drive laser incident on the photocathode causes photoemission of short, dense bunches of electrons, which are then accelerated into a...relativistic, high quality beam. Future free electron lasers demand reliable photocathodes with long-lived quantum efficiency at suitable drive laser

High Bandwidth Optical Links for Micro-Satellite Support

NASA Technical Reports Server (NTRS)

Chao, Tien-Hsin (Inventor); Wilson, Keith E. (Inventor); Coste, Keith (Inventor)

2016-01-01

A method, systems, apparatus and device enable high bandwidth satellite communications. An onboard tracking detector, installed in a low-earth orbit satellite, detects a position of an incoming optical beam received/transmitted from a first ground station of one or more ground stations. Tracker electronics determine orientation information of the incoming optical beam based on the position. Control electronics receive the orientation information from the tracker electronics, and control a waveguide drive electronics. The waveguide drive electronics control a voltage that is provided to an electro-optic waveguide beam steering device. The electro-optic waveguide beam steering device steers an outgoing optical beam to one of the one or more ground stations based on the voltage.

Design of an FPGA-based electronic flow regulator (EFR) for spacecraft propulsion system

NASA Astrophysics Data System (ADS)

Manikandan, J.; Jayaraman, M.; Jayachandran, M.

2011-02-01

This paper describes a scheme for electronically regulating the flow of propellant to the thruster from a high-pressure storage tank used in spacecraft application. Precise flow delivery of propellant to thrusters ensures propulsion system operation at best efficiency by maximizing the propellant and power utilization for the mission. The proposed field programmable gate array (FPGA) based electronic flow regulator (EFR) is used to ensure precise flow of propellant to the thrusters from a high-pressure storage tank used in spacecraft application. This paper presents hardware and software design of electronic flow regulator and implementation of the regulation logic onto an FPGA.Motivation for proposed FPGA-based electronic flow regulation is on the disadvantages of conventional approach of using analog circuits. Digital flow regulation overcomes the analog equivalent as digital circuits are highly flexible, are not much affected due to noise, accurate performance is repeatable, interface is easier to computers, storing facilities are possible and finally failure rate of digital circuits is less. FPGA has certain advantages over ASIC and microprocessor/micro-controller that motivated us to opt for FPGA-based electronic flow regulator. Also the control algorithm being software, it is well modifiable without changing the hardware. This scheme is simple enough to adopt for a wide range of applications, where the flow is to be regulated for efficient operation.The proposed scheme is based on a space-qualified re-configurable field programmable gate arrays (FPGA) and hybrid micro circuit (HMC). A graphical user interface (GUI) based application software is also developed for debugging, monitoring and controlling the electronic flow regulator from PC COM port.

Electron collisions with atoms, ions, molecules, and surfaces: Fundamental science empowering advances in technology

PubMed Central

Bartschat, Klaus; Kushner, Mark J.

2016-01-01

Electron collisions with atoms, ions, molecules, and surfaces are critically important to the understanding and modeling of low-temperature plasmas (LTPs), and so in the development of technologies based on LTPs. Recent progress in obtaining experimental benchmark data and the development of highly sophisticated computational methods is highlighted. With the cesium-based diode-pumped alkali laser and remote plasma etching of Si3N4 as examples, we demonstrate how accurate and comprehensive datasets for electron collisions enable complex modeling of plasma-using technologies that empower our high-technology–based society. PMID:27317740

Mechanism of the high transition temperature for the 1111-type iron-based superconductors R FeAsO (R =rare earth ): Synergistic effects of local structures and 4 f electrons

NASA Astrophysics Data System (ADS)

Zhang, Lifang; Meng, Junling; Liu, Xiaojuan; Yao, Fen; Meng, Jian; Zhang, Hongjie

2017-07-01

Among the iron-based superconductors, the 1111-type Fe-As-based superconductors REFeAs O1 -xFx (RE = rare earth) exhibit high transition temperatures (Tc) above 40 K. We perform first-principles calculations based on density functional theory with the consideration of both electronic correlations and spin-orbit couplings on rare earths and Fe ions to study the underlying mechanism as the microscopic structural distortions in REFeAsO tuned by both lanthanide contraction and external strain. The electronic structures evolve similarly in both cases. It is found that there exist an optimal structural regime that will not only initialize but also optimize the orbital fluctuations due to the competing Fe-As and Fe-Fe crystal fields. We also find that the key structural features in REFeAsO, such as As-Fe-As bond angle, intrinsically induce the modification of the Fermi surface and dynamic spin fluctuation. These results suggest that the superconductivity is mediated by antiferromagnetic spin fluctuations. Simultaneously, we show that the rare-earth 4 f electrons play important roles on the high transition temperature whose behavior might be analogous to that of the heavy-fermion superconductors. The superconductivity of these 1111-type iron-based superconductors with high-Tc is considered to originate from the synergistic effects of local structures and 4 f electrons.

Acid/base-regulated reversible electron transfer disproportionation of N–N linked bicarbazole and biacridine derivatives† †Electronic supplementary information (ESI) available: Experimental information, synthesis and characterization data, NMR spectra, solid state NMR data, X-ray data, ESR spectra, UV-Vis-NIR spectra, fluorescence spectra, kinetic experiments, theoretical calculations, Tables S1–S8, Scheme S1, Fig. S1–12, References. CCDC 1025063, 1038914, 1049677 and 1040722. For ESI and crystallographic data in CIF or other electronic format see DOI: 10.1039/c5sc00946d

PubMed Central

Pandit, Palash; Yamamoto, Koji; Nakamura, Toshikazu; Nishimura, Katsuyuki; Kurashige, Yuki; Yanai, Takeshi; Nakamura, Go; Masaoka, Shigeyuki; Furukawa, Ko; Yakiyama, Yumi; Kawano, Masaki

2015-01-01

Regulation of electron transfer on organic substances by external stimuli is a fundamental issue in science and technology, which affects organic materials, chemical synthesis, and biological metabolism. Nevertheless, acid/base-responsive organic materials that exhibit reversible electron transfer have not been well studied and developed, owing to the difficulty in inventing a mechanism to associate acid/base stimuli and electron transfer. We discovered a new phenomenon in which N–N linked bicarbazole (BC) and tetramethylbiacridine (TBA) derivatives undergo electron transfer disproportionation by acid stimulus, forming their stable radical cations and reduced species. The reaction occurs through a biradical intermediate generated by the acid-triggered N–N bond cleavage reaction of BC or TBA, which acts as a two electron acceptor to undergo electron transfer reactions with two equivalents of BC or TBA. In addition, in the case of TBA the disproportionation reaction is highly reversible through neutralization with NEt3, which recovers TBA through back electron transfer and N–N bond formation reactions. This highly reversible electron transfer reaction is possible due to the association between the acid stimulus and electron transfer via the acid-regulated N–N bond cleavage/formation reactions which provide an efficient switching mechanism, the ability of the organic molecules to act as multi-electron donors and acceptors, the extraordinary stability of the radical species, the highly selective reactivity, and the balance of the redox potentials. This discovery provides new design concepts for acid/base-regulated organic electron transfer systems, chemical reagents, or organic materials. PMID:29218181

Sensitivity, completeness and agreement of the tuberculosis electronic system in Ho Chi Minh City, Viet Nam.

PubMed

Thai, L H; Nhat, L M; Shah, N; Lyss, S; Ackers, M

2017-12-21

Setting: Since 2011, tuberculosis (TB) clinics in Ho Chi Minh City (HCMC), Viet Nam, have been entering data from a paper-based TB treatment register into an electronic database known as VITIMES (Viet Nam TB Information Management Electronic System), which is currently used in parallel with the paper system. Objective: To evaluate the sensitivity, completeness and agreement of data in VITIMES with that of paper-based registers among TB patients co-infected with the human immunodeficiency virus (HIV) being treated for TB in HCMC. Design: This was a retrospective data review of all TB-HIV patients receiving anti-tuberculosis treatment in each of the 24 district TB clinics in HCMC in 2013. Data were abstracted from the paper-based TB treatment registers at district level and extracted electronically at the provincial level. Records were matched based on name, age and address. The sensitivity, completeness and agreement of the electronic data were compared with data from the paper system. Results: The findings showed that the electronic system had high sensitivity (99.2%), high completeness (87-99%) and high agreement (κ 0.78-0.97) for all variables. Conclusion: The results of this study suggest that data are being correctly entered into VITIMES and that patient data can be directly entered into VITIMES instead of having a parallel, paper-based system.

Sensitivity, completeness and agreement of the tuberculosis electronic system in Ho Chi Minh City, Viet Nam

PubMed Central

Nhat, L. M.; Shah, N.; Lyss, S.; Ackers, M.

2017-01-01

Setting: Since 2011, tuberculosis (TB) clinics in Ho Chi Minh City (HCMC), Viet Nam, have been entering data from a paper-based TB treatment register into an electronic database known as VITIMES (Viet Nam TB Information Management Electronic System), which is currently used in parallel with the paper system. Objective: To evaluate the sensitivity, completeness and agreement of data in VITIMES with that of paper-based registers among TB patients co-infected with the human immunodeficiency virus (HIV) being treated for TB in HCMC. Design: This was a retrospective data review of all TB-HIV patients receiving anti-tuberculosis treatment in each of the 24 district TB clinics in HCMC in 2013. Data were abstracted from the paper-based TB treatment registers at district level and extracted electronically at the provincial level. Records were matched based on name, age and address. The sensitivity, completeness and agreement of the electronic data were compared with data from the paper system. Results: The findings showed that the electronic system had high sensitivity (99.2%), high completeness (87–99%) and high agreement (κ 0.78–0.97) for all variables. Conclusion: The results of this study suggest that data are being correctly entered into VITIMES and that patient data can be directly entered into VITIMES instead of having a parallel, paper-based system. PMID:29584795

A nanofiber based artificial electronic skin with high pressure sensitivity and 3D conformability

NASA Astrophysics Data System (ADS)

Zhong, Weibin; Liu, Qiongzhen; Wu, Yongzhi; Wang, Yuedan; Qing, Xing; Li, Mufang; Liu, Ke; Wang, Wenwen; Wang, Dong

2016-06-01

Pressure sensors with 3D conformability are highly desirable components for artificial electronic skin or e-textiles that can mimic natural skin, especially for application in real-time monitoring of human physiological signals. Here, a nanofiber based electronic skin with ultra-high pressure sensitivity and 3D conformability is designed and built by interlocking two elastic patterned nanofibrous membranes. The patterned membrane is facilely prepared by casting conductive nanofiber ink into a silicon mould to form an array of semi-spheroid-like protuberances. The protuberances composed of intertwined elastic POE nanofibers and PPy@PVA-co-PE nanofibers afford a tunable effective elastic modulus that is capable of capturing varied strains and stresses, thereby contributing to a high sensitivity for pressure sensing. This electronic skin-like sensor demonstrates an ultra-high sensitivity (1.24 kPa-1) below 150 Pa with a detection limit as low as about 1.3 Pa. The pixelated sensor array and a RGB-LED light are then assembled into a circuit and show a feasibility for visual detection of spatial pressure. Furthermore, a nanofiber based proof-of-concept wireless pressure sensor with a bluetooth module as a signal transmitter is proposed and has demonstrated great promise for wireless monitoring of human physiological signals, indicating a potential for large scale wearable electronic devices or e-skin.Pressure sensors with 3D conformability are highly desirable components for artificial electronic skin or e-textiles that can mimic natural skin, especially for application in real-time monitoring of human physiological signals. Here, a nanofiber based electronic skin with ultra-high pressure sensitivity and 3D conformability is designed and built by interlocking two elastic patterned nanofibrous membranes. The patterned membrane is facilely prepared by casting conductive nanofiber ink into a silicon mould to form an array of semi-spheroid-like protuberances. The protuberances composed of intertwined elastic POE nanofibers and PPy@PVA-co-PE nanofibers afford a tunable effective elastic modulus that is capable of capturing varied strains and stresses, thereby contributing to a high sensitivity for pressure sensing. This electronic skin-like sensor demonstrates an ultra-high sensitivity (1.24 kPa-1) below 150 Pa with a detection limit as low as about 1.3 Pa. The pixelated sensor array and a RGB-LED light are then assembled into a circuit and show a feasibility for visual detection of spatial pressure. Furthermore, a nanofiber based proof-of-concept wireless pressure sensor with a bluetooth module as a signal transmitter is proposed and has demonstrated great promise for wireless monitoring of human physiological signals, indicating a potential for large scale wearable electronic devices or e-skin. Electronic supplementary information (ESI) available. See DOI: 10.1039/c6nr02678h

Collaborative designing and job satisfaction of airplane manufacturing engineers: A case study

NASA Astrophysics Data System (ADS)

Johnson, Michael David, Sr.

The group III-nitride system of materials has had considerable commercial success in recent years in the solid state lighting (SSL) and power electronics markets. The need for high efficient general lighting applications has driven research into InGaN based blue light emitting diodes (LEDs), and demand for more efficient power electronics for telecommunications has driven research into AlGaN based high electron mobility transistors (HEMTs). However, the group III-nitrides material properties make them attractive for several other applications that have not received as much attention. This work focuses on developing group III-nitride based devices for novel applications. GaN is a robust, chemically inert, piezoelectric material, making it an ideal candidate for surface acoustic wave (SAW) devices designed for high temperature and/or harsh environment sensors. In this work, SAW devices based on GaN are developed for use in high temperature gas or chemical sensor applications. To increase device sensitivity, while maintaining a simple one-step photolithography fabrication process, devices were designed to operate at high harmonic frequencies. This allows for GHz regime operation without sub-micron fabrication. One potential market for this technology is continuous emissions monitoring of combustion gas vehicles. In addition to SAW devices, high electron mobility transistors (HEMTs) were developed. The epitaxial structure was characterized and the 2-D electron gas concentrations were simulated and compared to experimental results. Device fabrication processes were developed and are outlined. Fabricated devices were electrically measured and device performance is discussed.

Development of a bunch-by-bunch longitudinal feedback system with a wide dynamic range for the HIGS facility

NASA Astrophysics Data System (ADS)

Wu, W. Z.; Kim, Y.; Li, J. Y.; Teytelman, D.; Busch, M.; Wang, P.; Swift, G.; Park, I. S.; Ko, I. S.; Wu, Y. K.

2011-03-01

Electron beam coupled-bunch instabilities can limit and degrade the performance of storage ring based light sources. A longitudinal feedback system has been developed for the Duke storage ring to suppress multi-bunch beam instabilities which prevent stable, high-current operation of the storage ring based free-electron lasers (FELs) and an FEL driven Compton gamma source, the high intensity gamma-ray source (HIGS) at Duke University. In this work, we report the development of a state-of-the-art second generation longitudinal feedback system which employs a field programmable gate array (FPGA) based processor, and a broadband, high shunt-impedance kicker cavity. With two inputs and two outputs, the kicker cavity was designed with a resonant frequency of 937 MHz, a bandwidth of 97 MHz, and a shunt impedance of 1530 Ω. We also developed an S-matrix based technique to fully characterize the performance of the kicker cavity in the cold test. This longitudinal feedback system has been commissioned and optimized to stabilize high-current electron beams with a wide range of electron beam energies (250 MeV to 1.15 GeV) and a number of electron beam bunch modes, including the single-bunch mode and all possible symmetric bunch modes. This feedback system has become a critical instrument to ensure stable, high-flux operation of HIGS to produce nearly monochromatic, highly polarized Compton gamma-ray beams.

Algorithm for fast event parameters estimation on GEM acquired data

NASA Astrophysics Data System (ADS)

Linczuk, Paweł; Krawczyk, Rafał D.; Poźniak, Krzysztof T.; Kasprowicz, Grzegorz; Wojeński, Andrzej; Chernyshova, Maryna; Czarski, Tomasz

2016-09-01

We present study of a software-hardware environment for developing fast computation with high throughput and low latency methods, which can be used as back-end in High Energy Physics (HEP) and other High Performance Computing (HPC) systems, based on high amount of input from electronic sensor based front-end. There is a parallelization possibilities discussion and testing on Intel HPC solutions with consideration of applications with Gas Electron Multiplier (GEM) measurement systems presented in this paper.

Analysis of Proton Radiation Effects on Gallium Nitride High Electron Mobility Transistors

DTIC Science & Technology

2017-03-01

energy levels on a GaN-on-silicon high electron mobility transistor was created. Based on physical results of 2.0-MeV protons irradiation to fluence...and the physical device at 2.0-MeV proton irradiation , predictions were made for 5.0, 10.0, 20.0 and 40.0-MeV proton irradiation . The model generally...nitride, high electron mobility transistor, electronics, 2 MeV proton irradiation , radiation effects 15. NUMBER OF PAGES 87 16. PRICE CODE 17. SECURITY

Generation of Low-Energy High-Current Electron Beams in Plasma-Anode Electron Guns

NASA Astrophysics Data System (ADS)

Ozur, G. E.; Proskurovsky, D. I.

2018-01-01

This paper is a review of studies on the generation of low-energy high-current electron beams in electron guns with a plasma anode and an explosive-emission cathode. The problems related to the initiation of explosive electron emission under plasma and the formation and transport of high-current electron beams in plasma-filled systems are discussed consecutively. Considerable attention is given to the nonstationary effects that occur in the space charge layers of plasma. Emphasis is also placed on the problem of providing a uniform energy density distribution over the beam cross section, which is of critical importance in using electron beams of this type for surface treatment of materials. Examples of facilities based on low-energy high-current electron beam sources are presented and their applications in materials science and practice are discussed.

Electron-lattice coupling after high-energy deposition in aluminum

NASA Astrophysics Data System (ADS)

Gorbunov, S. A.; Medvedev, N. A.; Terekhin, P. N.; Volkov, A. E.

2015-07-01

This paper presents an analysis of the parameters of highly-excited electron subsystem of aluminum, appearing e.g. after swift heavy ion impact or laser pulse irradiation. For elevated electron temperatures, the electron heat capacity and the screening parameter are evaluated. The electron-phonon approximation of electron-lattice coupling is compared with its precise formulation based on the dynamic structure factor (DSF) formalism. The DSF formalism takes into account collective response of a lattice to excitation including all possible limit cases of this response. In particular, it automatically provides realization of electron-phonon coupling as the low-temperature limit, while switching to the plasma-limit for high electron temperatures. Aluminum is chosen as a good model system for illustration of the presented methodology.

Conceptual Design of Electron-Beam Generated Plasma Tools

NASA Astrophysics Data System (ADS)

Agarwal, Ankur; Rauf, Shahid; Dorf, Leonid; Collins, Ken; Boris, David; Walton, Scott

2015-09-01

Realization of the next generation of high-density nanostructured devices is predicated on etching features with atomic layer resolution, no damage and high selectivity. High energy electron beams generate plasmas with unique features that make them attractive for applications requiring monolayer precision. In these plasmas, high energy beam electrons ionize the background gas and the resultant daughter electrons cool to low temperatures via collisions with gas molecules and lack of any accelerating fields. For example, an electron temperature of <0.6 eV with densities comparable to conventional plasma sources can be obtained in molecular gases. The chemistry in such plasmas can significantly differ from RF plasmas as the ions/radicals are produced primarily by beam electrons rather than those in the tail of a low energy distribution. In this work, we will discuss the conceptual design of an electron beam based plasma processing system. Plasma properties will be discussed for Ar, Ar/N2, and O2 plasmas using a computational plasma model, and comparisons made to experiments. The fluid plasma model is coupled to a Monte Carlo kinetic model for beam electrons which considers gas phase collisions and the effect of electric and magnetic fields on electron motion. The impact of critical operating parameters such as magnetic field, beam energy, and gas pressure on plasma characteristics in electron-beam plasma processing systems will be discussed. Partially supported by the NRL base program.

Dual-mode operation of 2D material-base hot electron transistors

PubMed Central

Lan, Yann-Wen; Torres, Jr., Carlos M.; Zhu, Xiaodan; Qasem, Hussam; Adleman, James R.; Lerner, Mitchell B.; Tsai, Shin-Hung; Shi, Yumeng; Li, Lain-Jong; Yeh, Wen-Kuan; Wang, Kang L.

2016-01-01

Vertical hot electron transistors incorporating atomically-thin 2D materials, such as graphene or MoS2, in the base region have been proposed and demonstrated in the development of electronic and optoelectronic applications. To the best of our knowledge, all previous 2D material-base hot electron transistors only considered applying a positive collector-base potential (VCB > 0) as is necessary for the typical unipolar hot-electron transistor behavior. Here we demonstrate a novel functionality, specifically a dual-mode operation, in our 2D material-base hot electron transistors (e.g. with either graphene or MoS2 in the base region) with the application of a negative collector-base potential (VCB < 0). That is, our 2D material-base hot electron transistors can operate in either a hot-electron or a reverse-current dominating mode depending upon the particular polarity of VCB. Furthermore, these devices operate at room temperature and their current gains can be dynamically tuned by varying VCB. We anticipate our multi-functional dual-mode transistors will pave the way towards the realization of novel flexible 2D material-based high-density and low-energy hot-carrier electronic applications. PMID:27581550

Dual-mode operation of 2D material-base hot electron transistors.

PubMed

Lan, Yann-Wen; Torres, Carlos M; Zhu, Xiaodan; Qasem, Hussam; Adleman, James R; Lerner, Mitchell B; Tsai, Shin-Hung; Shi, Yumeng; Li, Lain-Jong; Yeh, Wen-Kuan; Wang, Kang L

2016-09-01

Vertical hot electron transistors incorporating atomically-thin 2D materials, such as graphene or MoS2, in the base region have been proposed and demonstrated in the development of electronic and optoelectronic applications. To the best of our knowledge, all previous 2D material-base hot electron transistors only considered applying a positive collector-base potential (VCB > 0) as is necessary for the typical unipolar hot-electron transistor behavior. Here we demonstrate a novel functionality, specifically a dual-mode operation, in our 2D material-base hot electron transistors (e.g. with either graphene or MoS2 in the base region) with the application of a negative collector-base potential (VCB < 0). That is, our 2D material-base hot electron transistors can operate in either a hot-electron or a reverse-current dominating mode depending upon the particular polarity of VCB. Furthermore, these devices operate at room temperature and their current gains can be dynamically tuned by varying VCB. We anticipate our multi-functional dual-mode transistors will pave the way towards the realization of novel flexible 2D material-based high-density and low-energy hot-carrier electronic applications.

Electronic Biosensors Based on III-Nitride Semiconductors.

PubMed

Kirste, Ronny; Rohrbaugh, Nathaniel; Bryan, Isaac; Bryan, Zachary; Collazo, Ramon; Ivanisevic, Albena

2015-01-01

We review recent advances of AlGaN/GaN high-electron-mobility transistor (HEMT)-based electronic biosensors. We discuss properties and fabrication of III-nitride-based biosensors. Because of their superior biocompatibility and aqueous stability, GaN-based devices are ready to be implemented as next-generation biosensors. We review surface properties, cleaning, and passivation as well as different pathways toward functionalization, and critically analyze III-nitride-based biosensors demonstrated in the literature, including those detecting DNA, bacteria, cancer antibodies, and toxins. We also discuss the high potential of these biosensors for monitoring living cardiac, fibroblast, and nerve cells. Finally, we report on current developments of covalent chemical functionalization of III-nitride devices. Our review concludes with a short outlook on future challenges and projected implementation directions of GaN-based HEMT biosensors.

Common electronic origin of superconductivity in (Li,Fe)OHFeSe bulk superconductor and single-layer FeSe/SrTiO3 films

PubMed Central

Zhao, Lin; Liang, Aiji; Yuan, Dongna; Hu, Yong; Liu, Defa; Huang, Jianwei; He, Shaolong; Shen, Bing; Xu, Yu; Liu, Xu; Yu, Li; Liu, Guodong; Zhou, Huaxue; Huang, Yulong; Dong, Xiaoli; Zhou, Fang; Liu, Kai; Lu, Zhongyi; Zhao, Zhongxian; Chen, Chuangtian; Xu, Zuyan; Zhou, X. J.

2016-01-01

The mechanism of high-temperature superconductivity in the iron-based superconductors remains an outstanding issue in condensed matter physics. The electronic structure plays an essential role in dictating superconductivity. Recent revelation of distinct electronic structure and high-temperature superconductivity in the single-layer FeSe/SrTiO3 films provides key information on the role of Fermi surface topology and interface in inducing or enhancing superconductivity. Here we report high-resolution angle-resolved photoemission measurements on the electronic structure and superconducting gap of an FeSe-based superconductor, (Li0.84Fe0.16)OHFe0.98Se, with a Tc at 41 K. We find that this single-phase bulk superconductor shows remarkably similar electronic behaviours to that of the superconducting single-layer FeSe/SrTiO3 films in terms of Fermi surface topology, band structure and the gap symmetry. These observations provide new insights in understanding high-temperature superconductivity in the single-layer FeSe/SrTiO3 films and the mechanism of superconductivity in the bulk iron-based superconductors. PMID:26853801

p-π Conjugated Polymers Based on Stable Triarylborane with n-Type Behavior in Optoelectronic Devices.

PubMed

Meng, Bin; Ren, Yi; Liu, Jun; Jäkle, Frieder; Wang, Lixiang

2018-02-19

p-π conjugation with embedded heteroatoms offers unique opportunities to tune the electronic structure of conjugated polymers. An approach is presented to form highly electron-deficient p-π conjugated polymers based on triarylboranes, demonstrate their n-type behavior, and explore device applications. By combining alternating [2,4,6-tris(trifluoromethyl)phenyl]di(thien-2-yl)borane (FBDT) and electron-deficient isoindigo (IID)/pyridine-flanked diketopyrrolopyrrole (DPPPy) units, we achieve low-lying lowest unoccupied molecular orbital (LUMO) and highest occupied molecular orbital (HOMO) energy levels, high electron mobilities, and broad absorptions in the visible region. All-polymer solar cells with these polymers as electron acceptors exhibit encouraging photovoltaic performance with power conversion efficiencies of up to 2.83 %. These results unambiguously prove the n-type behavior and demonstrate the photovoltaic applications of p-π conjugated polymers based on triarylborane. © 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Conditioning of BPM pickup signals for operations of the Duke storage ring with a wide range of single-bunch current

NASA Astrophysics Data System (ADS)

Xu, Wei; Li, Jing-Yi; Huang, Sen-Lin; Z. Wu, W.; Hao, H.; P., Wang; K. Wu, Y.

2014-10-01

The Duke storage ring is a dedicated driver for the storage ring based oscillator free-electron lasers (FELs), and the High Intensity Gamma-ray Source (HIGS). It is operated with a beam current ranging from about 1 mA to 100 mA per bunch for various operations and accelerator physics studies. High performance operations of the FEL and γ-ray source require a stable electron beam orbit, which has been realized by the global orbit feedback system. As a critical part of the orbit feedback system, the electron beam position monitors (BPMs) are required to be able to precisely measure the electron beam orbit in a wide range of the single-bunch current. However, the high peak voltage of the BPM pickups associated with high single-bunch current degrades the performance of the BPM electronics, and can potentially damage the BPM electronics. A signal conditioning method using low pass filters is developed to reduce the peak voltage to protect the BPM electronics, and to make the BPMs capable of working with a wide range of single-bunch current. Simulations and electron beam based tests are performed. The results show that the Duke storage ring BPM system is capable of providing precise orbit measurements to ensure highly stable FEL and HIGS operations.

Energy spectrum of cosmic-ray electrons at TeV energies.

PubMed

Aharonian, F; Akhperjanian, A G; Barres de Almeida, U; Bazer-Bachi, A R; Becherini, Y; Behera, B; Benbow, W; Bernlöhr, K; Boisson, C; Bochow, A; Borrel, V; Braun, I; Brion, E; Brucker, J; Brun, P; Brucker, R; Bulik, T; Büsching, I; Boutelier, T; Carrigan, S; Chadwick, P M; Charbonnier, A; Chaves, R C G; Cheesebrough, A; Chounet, L M; Clapson, A C; Coignet, G; Costamante, L; Dalton, M; Degrange, B; Deil, C; Dickinson, H J; Djannati-Ataï, A; Domainko, W; Drury, L O'C; Dubois, F; Dubus, G; Dyks, J; Dyrda, M; Egberts, K; Emmanoulopoulos, D; Espigat, P; Farnier, C; Feinstein, F; Fiasson, A; Fontaine, G; Füsling, M; Gabici, S; Gallant, Y A; Gérard, L; Giebels, B; Glicenstein, J F; Glück, B; Goret, P; Hadjichristidis, C; Hauser, D; Hauser, M; Heinz, S; Heinzelmann, G; Henri, G; Hermann, G; Hinton, J A; Hoffmann, A; Hofmann, W; Holleran, M; Hoppe, S; Horns, D; Jacholkowska, A; de Jager, O C; Jung, I; Katarzyński, K; Kaufmann, S; Kendziorra, E; Kerschhaggl, M; Khangulyan, D; Khélifi, B; Keogh, D; Komin, Nu; Kosack, K; Lamanna, G; Lenain, J P; Lohse, T; Marandon, V; Martin, J M; Martineau-Huynh, O; Marcowith, A; Maurin, D; McComb, T J L; Medina, C; Moderski, R; Moulin, E; Naumann-Godo, M; de Naurois, M; Nedbal, D; Nekrassov, D; Niemiec, J; Nolan, S J; Ohm, S; Olive, J F; de Oña Wilhelmi, E; Orford, K J; Osborne, J L; Ostrowski, M; Panter, M; Pedaletti, G; Pelletier, G; Petrucci, P O; Pita, S; Pühlhofer, G; Punch, M; Quirrenbach, A; Raubenheimer, B C; Raue, M; Rayner, S M; Renaud, M; Rieger, F; Ripken, J; Rob, L; Rosier-Lees, S; Rowell, G; Rudak, B; Rulten, C B; Ruppel, J; Sahakian, V; Santangelo, A; Schlickeiser, R; Schöck, F M; Schröder, R; Schwanke, U; Schwarzburg, S; Schwemmer, S; Shalchi, A; Skilton, J L; Sol, H; Spangler, D; Stawarz, Ł; Steenkamp, R; Stegmann, C; Superina, G; Tam, P H; Tavernet, J P; Terrier, R; Tibolla, O; van Eldik, C; Vasileiadis, G; Venter, C; Vialle, J P; Vincent, P; Vivier, M; Völk, H J; Volpe, F; Wagner, S J; Ward, M; Zdziarski, A A; Zech, A

2008-12-31

The very large collection area of ground-based gamma-ray telescopes gives them a substantial advantage over balloon or satellite based instruments in the detection of very-high-energy (>600 GeV) cosmic-ray electrons. Here we present the electron spectrum derived from data taken with the High Energy Stereoscopic System (H.E.S.S.) of imaging atmospheric Cherenkov telescopes. In this measurement, the first of this type, we are able to extend the measurement of the electron spectrum beyond the range accessible to direct measurements. We find evidence for a substantial steepening in the energy spectrum above 600 GeV compared to lower energies.

Nanostructure studies of strongly correlated materials.

PubMed

Wei, Jiang; Natelson, Douglas

2011-09-01

Strongly correlated materials exhibit an amazing variety of phenomena, including metal-insulator transitions, colossal magnetoresistance, and high temperature superconductivity, as strong electron-electron and electron-phonon couplings lead to competing correlated ground states. Recently, researchers have begun to apply nanostructure-based techniques to this class of materials, examining electronic transport properties on previously inaccessible length scales, and applying perturbations to drive systems out of equilibrium. We review progress in this area, particularly emphasizing work in transition metal oxides (Fe(3)O(4), VO(2)), manganites, and high temperature cuprate superconductors. We conclude that such nanostructure-based studies have strong potential to reveal new information about the rich physics at work in these materials.

Superposed Redox Chemistry of Fused Carbon Rings in Cyclooctatetraene-Based Organic Molecules for High-Voltage and High-Capacity Cathodes.

PubMed

Zhao, Xiaolin; Qiu, Wujie; Ma, Chao; Zhao, Yingqin; Wang, Kaixue; Zhang, Wenqing; Kang, Litao; Liu, Jianjun

2018-01-24

Even though many organic cathodes have been developed and have made a significant improvement in energy density and reversibility, some organic materials always generate relatively low voltage and limited discharge capacity because their energy storage mechanism is solely based on redox reactions of limited functional groups [N-O, C═X (X = O, N, S)] linking to aromatic rings. Here, a series of cyclooctatetraene-based (C 8 H 8 ) organic molecules were demonstrated to have electrochemical activity of high-capacity and high-voltage from carbon rings by means of first-principles calculations and electronic structure analysis. Fused molecules of C 8 -C 4 -C 8 (C 16 H 12 ) and C 8 -C 4 -C 8 -C 4 -C 8 (C 24 H 16 ) contain, respectively, four and eight electron-deficient carbons, generating high-capacity by their multiple redox reactions. Our sodiation calculations predict that C 16 H 12 and C 24 H 16 exhibit discharge capacities of 525.3 and 357.2 mA h g -1 at the voltage change from 3.5 to 1.0 V and 3.7 to 1.3 V versus Na + /Na, respectively. Electronic structure analysis reveals that the high voltages are attributed to superposed electron stabilization mechanisms, including double-bond reformation and aromatization from carbon rings. High thermodynamic stability of these C 24 H 16 -based systems strongly suggests feasibility of experimental realization. The present work provides evidence that cyclooctatetraene-based organic molecules fused with the C 4 ring are promising in designing high-capacity and high-voltage organic rechargeable cathodes.

Mechanistic insights into energy conservation by flavin-based electron bifurcation.

PubMed

Lubner, Carolyn E; Jennings, David P; Mulder, David W; Schut, Gerrit J; Zadvornyy, Oleg A; Hoben, John P; Tokmina-Lukaszewska, Monika; Berry, Luke; Nguyen, Diep M; Lipscomb, Gina L; Bothner, Brian; Jones, Anne K; Miller, Anne-Frances; King, Paul W; Adams, Michael W W; Peters, John W

2017-06-01

The recently realized biochemical phenomenon of energy conservation through electron bifurcation provides biology with an elegant means to maximize utilization of metabolic energy. The mechanism of coordinated coupling of exergonic and endergonic oxidation-reduction reactions by a single enzyme complex has been elucidated through optical and paramagnetic spectroscopic studies revealing unprecedented features. Pairs of electrons are bifurcated over more than 1 volt of electrochemical potential by generating a low-potential, highly energetic, unstable flavin semiquinone and directing electron flow to an iron-sulfur cluster with a highly negative potential to overcome the barrier of the endergonic half reaction. The unprecedented range of thermodynamic driving force that is generated by flavin-based electron bifurcation accounts for unique chemical reactions that are catalyzed by these enzymes.

Electronic differential control of 2WD electric vehicle considering steering stability

NASA Astrophysics Data System (ADS)

Hua, Yiding; Jiang, Haobin; Geng, Guoqing

2017-03-01

Aiming at the steering wheel differential steering control technology of rear wheel independent driving electric wheel, considering the assisting effect of electronic differential control on vehicle steering, based on the high speed steering characteristic of electric wheel car, the electronic differential speed of auxiliary wheel steering is also studied. A yaw moment control strategy is applied to the vehicle at high speed. Based on the vehicle stability reference value, yaw rate is used to design the fuzzy controller to distribute the driving wheel torque. The simulation results show that the basic electronic differential speed function is realized based on the yaw moment control strategy, while the vehicle stability control is improved and the driving safety is enhanced. On the other hand, the torque control strategy can also assist steering of vehicle.

Storage-ring Electron Cooler for Relativistic Ion Beams

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lin, Fanglei; Derbenev, Yaroslav; Douglas, David R.

Application of electron cooling at ion energies above a few GeV has been limited due to reduction of electron cooling efficiency with energy and difficulty in producing and accelerating a high-current high-quality electron beam. A high-current storage-ring electron cooler offers a solution to both of these problems by maintaining high cooling beam quality through naturally-occurring synchrotron radiation damping of the electron beam. However, the range of ion energies where storage-ring electron cooling can be used has been limited by low electron beam damping rates at low ion energies and high equilibrium electron energy spread at high ion energies. This papermore » reports a development of a storage ring based cooler consisting of two sections with significantly different energies: the cooling and damping sections. The electron energy and other parameters in the cooling section are adjusted for optimum cooling of a stored ion beam. The beam parameters in the damping section are adjusted for optimum damping of the electron beam. The necessary energy difference is provided by an energy recovering SRF structure. A prototype linear optics of such storage-ring cooler is presented.« less

CMOS-Technology-Enabled Flexible and Stretchable Electronics for Internet of Everything Applications.

PubMed

Hussain, Aftab M; Hussain, Muhammad M

2016-06-01

Flexible and stretchable electronics can dramatically enhance the application of electronics for the emerging Internet of Everything applications where people, processes, data and devices will be integrated and connected, to augment quality of life. Using naturally flexible and stretchable polymeric substrates in combination with emerging organic and molecular materials, nanowires, nanoribbons, nanotubes, and 2D atomic crystal structured materials, significant progress has been made in the general area of such electronics. However, high volume manufacturing, reliability and performance per cost remain elusive goals for wide commercialization of these electronics. On the other hand, highly sophisticated but extremely reliable, batch-fabrication-capable and mature complementary metal oxide semiconductor (CMOS)-based technology has facilitated tremendous growth of today's digital world using thin-film-based electronics; in particular, bulk monocrystalline silicon (100) which is used in most of the electronics existing today. However, one fundamental challenge is that state-of-the-art CMOS electronics are physically rigid and brittle. Therefore, in this work, how CMOS-technology-enabled flexible and stretchable electronics can be developed is discussed, with particular focus on bulk monocrystalline silicon (100). A comprehensive information base to realistically devise an integration strategy by rational design of materials, devices and processes for Internet of Everything electronics is offered. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Electron mobility in monoclinic β-Ga2O3—Effect of plasmon-phonon coupling, anisotropy, and confinement

NASA Astrophysics Data System (ADS)

Ghosh, Krishnendu; Singisetti, Uttam

2017-11-01

This work reports an investigation of electron transport in monoclinic \\beta-Ga2O3 based on a combination of density functional perturbation theory based lattice dynamical computations, coupling calculation of lattice modes with collective plasmon oscillations and Boltzmann theory based transport calculations. The strong entanglement of the plasmon with the different longitudinal optical (LO) modes make the role LO-plasmon coupling crucial for transport. The electron density dependence of the electron mobility in \\beta-Ga2O3 is studied in bulk material form and also in the form of two-dimensional electron gas. Under high electron density a bulk mobility of 182 cm2/ V.s is predicted while in 2DEG form the corresponding mobility is about 418 cm2/V.s when remote impurities are present at the interface and improves further as the remote impurity center moves away from the interface. The trend of the electron mobility shows promise for realizing high electron mobility in dopant isolated electron channels. The experimentally observed small anisotropy in mobility is traced through a transient Monte Carlo simulation. It is found that the anisotropy of the IR active phonon modes is responsible for giving rise to the anisotropy in low-field electron mobility.

Silicon Carbide Solar Cells Investigated

NASA Technical Reports Server (NTRS)

Bailey, Sheila G.; Raffaelle, Ryne P.

2001-01-01

The semiconductor silicon carbide (SiC) has long been known for its outstanding resistance to harsh environments (e.g., thermal stability, radiation resistance, and dielectric strength). However, the ability to produce device-quality material is severely limited by the inherent crystalline defects associated with this material and their associated electronic effects. Much progress has been made recently in the understanding and control of these defects and in the improved processing of this material. Because of this work, it may be possible to produce SiC-based solar cells for environments with high temperatures, light intensities, and radiation, such as those experienced by solar probes. Electronics and sensors based on SiC can operate in hostile environments where conventional silicon-based electronics (limited to 350 C) cannot function. Development of this material will enable large performance enhancements and size reductions for a wide variety of systems--such as high-frequency devices, high-power devices, microwave switching devices, and high-temperature electronics. These applications would supply more energy-efficient public electric power distribution and electric vehicles, more powerful microwave electronics for radar and communications, and better sensors and controls for cleaner-burning, more fuel-efficient jet aircraft and automobile engines. The 6H-SiC polytype is a promising wide-bandgap (Eg = 3.0 eV) semiconductor for photovoltaic applications in harsh solar environments that involve high-temperature and high-radiation conditions. The advantages of this material for this application lie in its extremely large breakdown field strength, high thermal conductivity, good electron saturation drift velocity, and stable electrical performance at temperatures as high as 600 C. This behavior makes it an attractive photovoltaic solar cell material for devices that can operate within three solar radii of the Sun.

UNDULATOR-BASED LASER WAKEFIELD ACCELERATOR ELECTRON BEAM DIAGNOSTIC

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bakeman, M.S.; Fawley, W.M.; Leemans, W. P.

to couple the THUNDER undulator to the LOASIS Lawrence Berkeley National Laboratory (LBNL) laser wakefield accelerator (LWFA). Currently the LWFA has achieved quasi-monoenergetic electron beams with energies up to 1 GeV. These ultra-short, high-peak-current, electron beams are ideal for driving a compact XUV free electron laser (FEL). Understanding the electron beam properties such as the energy spread and emittance is critical for achieving high quality light sources with high brightness. By using an insertion device such as an undulator and observing changes in the spontaneous emission spectrum, the electron beam energy spread and emittance can be measured with high precision.more » The initial experiments will use spontaneous emission from 1.5 m of undulator. Later experiments will use up to 5 m of undulator with a goal of a high gain, XUV FEL.« less

GaN-Based High Temperature and Radiation-Hard Electronics for Harsh Environments

NASA Technical Reports Server (NTRS)

Son, Kyung-ah; Liao, Anna; Lung, Gerald; Gallegos, Manuel; Hatakeh, Toshiro; Harris, Richard D.; Scheick, Leif Z.; Smythe, William D.

2010-01-01

We develop novel GaN-based high temperature and radiation-hard electronics to realize data acquisition electronics and transmitters suitable for operations in harsh planetary environments. In this paper, we discuss our research on metal-oxide-semiconductor (MOS) transistors that are targeted for 500 (sup o)C operation and >2 Mrad radiation hardness. For the target device performance, we develop Schottky-free AlGaN/GaN MOS transistors, where a gate electrode is processed in a MOS layout using an Al2O3 gate dielectric layer....

A high-current electron gun for the electron beam ion trap at the National Superconducting Cyclotron Laboratory.

PubMed

Schwarz, S; Baumann, T M; Kittimanapun, K; Lapierre, A; Snyder, A

2014-02-01

The Electron Beam Ion Trap (EBIT) in NSCL's reaccelerator ReA uses continuous ion injection and accumulation. In order to maximize capture efficiency and minimize breeding time into high charge states, the EBIT requires a high-current/high current-density electron beam. A new electron gun insert based on a concave Ba-dispenser cathode has been designed and built to increase the current transmitted through the EBIT's superconducting magnet. With the new insert, stable EBIT operating conditions with 0.8 A of electron beam have been established. The design of the electron gun is presented together with calculated and measured perveance data. In order to assess the experimental compression of the electron beam, a pinhole CCD camera has been set up to measure the electron beam radius. The camera observes X-rays emitted from highly charged ions, excited by the electron beam. Initial tests with this camera setup will be presented. They indicate that a current density of 640 A/cm(2) has been reached when the EBIT magnet was operated at 4 T.

A high-current electron gun for the electron beam ion trap at the National Superconducting Cyclotron Laboratory

DOE Office of Scientific and Technical Information (OSTI.GOV)

Schwarz, S., E-mail: schwarz@nscl.msu.edu; Baumann, T. M.; Kittimanapun, K.

The Electron Beam Ion Trap (EBIT) in NSCL’s reaccelerator ReA uses continuous ion injection and accumulation. In order to maximize capture efficiency and minimize breeding time into high charge states, the EBIT requires a high-current/high current-density electron beam. A new electron gun insert based on a concave Ba-dispenser cathode has been designed and built to increase the current transmitted through the EBIT’s superconducting magnet. With the new insert, stable EBIT operating conditions with 0.8 A of electron beam have been established. The design of the electron gun is presented together with calculated and measured perveance data. In order to assessmore » the experimental compression of the electron beam, a pinhole CCD camera has been set up to measure the electron beam radius. The camera observes X-rays emitted from highly charged ions, excited by the electron beam. Initial tests with this camera setup will be presented. They indicate that a current density of 640 A/cm{sup 2} has been reached when the EBIT magnet was operated at 4 T.« less

Alumina Based 500 C Electronic Packaging Systems and Future Development

NASA Technical Reports Server (NTRS)

Chen, Liang-Yu

2012-01-01

NASA space and aeronautical missions for probing the inner solar planets as well as for in situ monitoring and control of next-generation aeronautical engines require high-temperature environment operable sensors and electronics. A 96% aluminum oxide and Au thick-film metallization based packaging system including chip-level packages, printed circuit board, and edge-connector is in development for high temperature SiC electronics. An electronic packaging system based on this material system was successfully tested and demonstrated with SiC electronics at 500 C for over 10,000 hours in laboratory conditions previously. In addition to the tests in laboratory environments, this packaging system has more recently been tested with a SiC junction field effect transistor (JFET) on low earth orbit through the NASA Materials on the International Space Station Experiment 7 (MISSE7). A SiC JFET with a packaging system composed of a 96% alumina chip-level package and an alumina printed circuit board mounted on a data acquisition circuit board was launched as a part of the MISSE7 suite to International Space Station via a Shuttle mission and tested on the orbit for eighteen months. A summary of results of tests in both laboratory and space environments will be presented. The future development of alumina based high temperature packaging using co-fired material systems for improved performance at high temperature and more feasible mass production will also be discussed.

Bilayer insulator tunnel barriers for graphene-based vertical hot-electron transistors

NASA Astrophysics Data System (ADS)

Vaziri, S.; Belete, M.; Dentoni Litta, E.; Smith, A. D.; Lupina, G.; Lemme, M. C.; Östling, M.

2015-07-01

Vertical graphene-based device concepts that rely on quantum mechanical tunneling are intensely being discussed in the literature for applications in electronics and optoelectronics. In this work, the carrier transport mechanisms in semiconductor-insulator-graphene (SIG) capacitors are investigated with respect to their suitability as electron emitters in vertical graphene base transistors (GBTs). Several dielectric materials as tunnel barriers are compared, including dielectric double layers. Using bilayer dielectrics, we experimentally demonstrate significant improvements in the electron injection current by promoting Fowler-Nordheim tunneling (FNT) and step tunneling (ST) while suppressing defect mediated carrier transport. High injected tunneling current densities approaching 103 A cm-2 (limited by series resistance), and excellent current-voltage nonlinearity and asymmetry are achieved using a 1 nm thick high quality dielectric, thulium silicate (TmSiO), as the first insulator layer, and titanium dioxide (TiO2) as a high electron affinity second layer insulator. We also confirm the feasibility and effectiveness of our approach in a full GBT structure which shows dramatic improvement in the collector on-state current density with respect to the previously reported GBTs. The device design and the fabrication scheme have been selected with future CMOS process compatibility in mind. This work proposes a bilayer tunnel barrier approach as a promising candidate to be used in high performance vertical graphene-based tunneling devices.

Two-temperature model in molecular dynamics simulations of cascades in Ni-based alloys

DOE PAGES

Zarkadoula, Eva; Samolyuk, German; Weber, William J.

2017-01-03

In high-energy irradiation events, energy from the fast moving ion is transferred to the system via nuclear and electronic energy loss mechanisms. The nuclear energy loss results in the creation of point defects and clusters, while the energy transferred to the electrons results in the creation of high electronic temperatures, which can affect the damage evolution. In this paper, we perform molecular dynamics simulations of 30 keV and 50 keV Ni ion cascades in nickel-based alloys without and with the electronic effects taken into account. We compare the results of classical molecular dynamics (MD) simulations, where the electronic effects aremore » ignored, with results from simulations that include the electronic stopping only, as well as simulations where both the electronic stopping and the electron-phonon coupling are incorporated, as described by the two temperature model (2T-MD). Finally, our results indicate that the 2T-MD leads to a smaller amount of damage, more isolated defects and smaller defect clusters.« less

High-performance green flexible electronics based on biodegradable cellulose nanofibril paper

Treesearch

Yei Hwan Jung; Tzu-Hsuan Chang; Huilong Zhang; Chunhua Yao; Qifeng Zheng; Vina W. Yang; Hongyi Mi; Munho Kim; Sang June Cho; Dong-Wook Park; Hao Jiang; Juhwan Lee; Yijie Qiu; Weidong Zhou; Zhiyong Cai; Shaoqin Gong; Zhenqiang Ma

2015-01-01

Today’s consumer electronics, such as cell phones, tablets and other portable electronic devices, are typically made of non-renewable, non-biodegradable, and sometimes potentially toxic (for example, gallium arsenide) materials. These consumer electronics are frequently upgraded or discarded, leading to serious environmental contamination. Thus, electronic systems...

Advanced Graphene-Based Binder-Free Electrodes for High-Performance Energy Storage.

PubMed

Ji, Junyi; Li, Yang; Peng, Wenchao; Zhang, Guoliang; Zhang, Fengbao; Fan, Xiaobin

2015-09-23

The increasing demand for energy has triggered tremendous research effort for the development of high-performance and durable energy-storage devices. Advanced graphene-based electrodes with high electrical conductivity and ion accessibility can exhibit superior electrochemical performance in energy-storage devices. Among them, binder-free configurations can enhance the electron conductivity of the electrode, which leads to a higher capacity by avoiding the addition of non-conductive and inactive binders. Graphene, a 2D material, can be fabricated into a porous and flexible structure with an interconnected conductive network. Such a conductive structure is favorable for both electron and ion transport to the entire electrode surface. In this review, the main processes used to prepare binder-free graphene-based hybrids with high porosity and well-designed electron conductive networks are summarized. Then, the applications of free-standing binder-free graphene-based electrodes in energy-storage devices are discussed. Future research aspects with regard to overcoming the technological bottlenecks are also proposed. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Mechanistic insights into energy conservation by flavin-based electron bifurcation

DOE PAGES

Lubner, Carolyn E.; Jennings, David P.; Mulder, David W.; ...

2017-04-10

The recently realized biochemical phenomenon of energy conservation through electron bifurcation provides biology with an elegant means to maximize utilization of metabolic energy. The mechanism of coordinated coupling of exergonic and endergonic oxidation-reduction reactions by a single enzyme complex has been elucidated through optical and paramagnetic spectroscopic studies revealing unprecedented features. Pairs of electrons are bifurcated over more than 1 volt of electrochemical potential by generating a low-potential, highly energetic, unstable flavin semiquinone and directing electron flow to an iron-sulfur cluster with a highly negative potential to overcome the barrier of the endergonic half reaction. As a result, the unprecedentedmore » range of thermodynamic driving force that is generated by flavin-based electron bifurcation accounts for unique chemical reactions that are catalyzed by these enzymes.« less

Mechanistic insights into energy conservation by flavin-based electron bifurcation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lubner, Carolyn E.; Jennings, David P.; Mulder, David W.

The recently realized biochemical phenomenon of energy conservation through electron bifurcation provides biology with an elegant means to maximize utilization of metabolic energy. The mechanism of coordinated coupling of exergonic and endergonic oxidation-reduction reactions by a single enzyme complex has been elucidated through optical and paramagnetic spectroscopic studies revealing unprecedented features. Pairs of electrons are bifurcated over more than 1 volt of electrochemical potential by generating a low-potential, highly energetic, unstable flavin semiquinone and directing electron flow to an iron-sulfur cluster with a highly negative potential to overcome the barrier of the endergonic half reaction. As a result, the unprecedentedmore » range of thermodynamic driving force that is generated by flavin-based electron bifurcation accounts for unique chemical reactions that are catalyzed by these enzymes.« less

Graphene-on-GaN Hot Electron Transistor

NASA Astrophysics Data System (ADS)

Zubair, Ahmad; Nourbakhsh, Amirhasan; Hong, Jin-Yong; Song, Yi; Qi, Meng; Jena, Debdeep; Kong, Jing; Dresselhaus, Mildred S.; Palacios, Tomas

Hot electron transistors (HETs) are promising devices for potential high-frequency operation that currently CMOS cannot provide. In an HET, carrier transport is due to the injection of hot electrons from an emitter to a collector which is modulated by a base electrode. Therefore, ultra-thin base electrodes are needed to facilitate ultra-short transit time and high performance for THz operation range. In this regard, graphene, the thinnest conductive membrane in nature, is considered the best candidate for the base material in HETs. The existing HETs with SiO2/Si as emitter stack suffer from low current gain and output current density. In this work, we use the two-dimensional electron gas (2-DEG) in a GaN-based heterostructure as emitter and monolayer graphene as the base electrode. The transport study of the proof-of-concept device shows high output current density (>50 A/cm2) , current gain (>3) and ballistic injection efficiency of 75%. These results indicate that performance parameters can be further improved by engineering the band offset of the graphene/collector stack and improved interface between graphene and GaN. Army Research Office (ARO) (Grant Nos. W911NF-14-2-0071, 6930265, and 6930861).

An Electronic Library-Based Learning Environment for Supporting Web-Based Problem-Solving Activities

ERIC Educational Resources Information Center

Tsai, Pei-Shan; Hwang, Gwo-Jen; Tsai, Chin-Chung; Hung, Chun-Ming; Huang, Iwen

2012-01-01

This study aims to develop an electronic library-based learning environment to support teachers in developing web-based problem-solving activities and analyzing the online problem-solving behaviors of students. Two experiments were performed in this study. In study 1, an experiment on 103 elementary and high school teachers (the learning activity…

An alpha–gamma coincidence spectrometer based on the Photon–Electron Rejecting Alpha Liquid Scintillation (PERALS®) system

DOE PAGES

Cadieux, J. R.; Fugate, G. A.; King, III, G. S.

2015-02-07

Here, an alpha–gamma coincidence spectrometer has been developed for the measurement of selected actinide isotopes in the presence of high beta/gamma fields. The system is based on a PERALS® liquid scintillation counter for beta/alpha discrimination and was successfully tested with both high purity germanium and bismuth germanate, gamma-ray detectors using conventional analog electronics.

THz based electron bunch length monitoring at the quasi-cw SRF accelerator ELBE

NASA Astrophysics Data System (ADS)

Green, Bertram; Kovalev, Sergey; Fisher, Alan; Bauer, Christian; Kuntzsch, Michael; Lehnert, Ulf; Schurig, Rico; Goltz, Torsten; Michel, Peter; Stojanovic, Nikola; Gensch, Michael

2014-03-01

In the past few years the quasi-cw SRF electron accelerator ELBE has been upgraded so that it now allows to compress electron bunches to the sub-picosecond regime. The actual optimization and control of the electron bunch form represents one of the largest challenges of the coming years. In particular with respect to the midterm goal to utilize the ultra-short electron bunches for Laser-Thomson scattering experiments or high field THz experiments. Current developments of THz based electron bunch diagnostic are discussed and an outlook into future developments is given.

Effect of Energy Alignment, Electron Mobility, and Film Morphology of Perylene Diimide Based Polymers as Electron Transport Layer on the Performance of Perovskite Solar Cells.

PubMed

Guo, Qiang; Xu, Yingxue; Xiao, Bo; Zhang, Bing; Zhou, Erjun; Wang, Fuzhi; Bai, Yiming; Hayat, Tasawar; Alsaedi, Ahmed; Tan, Zhan'ao

2017-03-29

For organic-inorganic perovskite solar cells (PerSCs), the electron transport layer (ETL) plays a crucial role in efficient electron extraction and transport for high performance PerSCs. Fullerene and its derivatives are commonly used as ETL for p-i-n structured PerSCs. However, these spherical small molecules are easy to aggregate with high annealing temperature and thus induce morphology stability problems. N-type conjugated polymers are promising candidates to overcome these problems due to the tunable energy levels, controllable aggregation behaviors, and good film formation abilities. Herein, a series of perylene diimide (PDI) based polymers (PX-PDIs), which contain different copolymeried units (X), including vinylene (V), thiophene (T), selenophene (Se), dibenzosilole (DBS), and cyclopentadithiophene (CPDT), are introduced as ETL for p-i-n structured PerSCs. The effect of energy alignment, electron mobility, and film morphology of these ETLs on the photovoltaic performance of the PerSCs are fully investigated. Among the PX-PDIs, PV-PDI demonstrates the deeper LUMO energy level, the highly delocalized LUMO electron density, and a better planar structure, making it the best electron transport material for PerSCs. The planar heterojunction PerSC with PV-PDI as ETL achieves a power conversion efficiency (PCE) of 10.14%, among the best values for non-fullerene based PerSCs.

Negative differential resistance in GaN tunneling hot electron transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang, Zhichao; Nath, Digbijoy; Rajan, Siddharth

Room temperature negative differential resistance is demonstrated in a unipolar GaN-based tunneling hot electron transistor. Such a device employs tunnel-injected electrons to vary the electron energy and change the fraction of reflected electrons, and shows repeatable negative differential resistance with a peak to valley current ratio of 7.2. The device was stable when biased in the negative resistance regime and tunable by changing collector bias. Good repeatability and double-sweep characteristics at room temperature show the potential of such device for high frequency oscillators based on quasi-ballistic transport.

Ultrashort megaelectronvolt positron beam generation based on laser-accelerated electrons

NASA Astrophysics Data System (ADS)

Xu, Tongjun; Shen, Baifei; Xu, Jiancai; Li, Shun; Yu, Yong; Li, Jinfeng; Lu, Xiaoming; Wang, Cheng; Wang, Xinliang; Liang, Xiaoyan; Leng, Yuxin; Li, Ruxin; Xu, Zhizhan

2016-03-01

Experimental generation of ultrashort MeV positron beams with high intensity and high density using a compact laser-driven setup is reported. A high-density gas jet is employed experimentally to generate MeV electrons with high charge; thus, a charge-neutralized MeV positron beam with high density is obtained during laser-accelerated electrons irradiating high-Z solid targets. It is a novel electron-positron source for the study of laboratory astrophysics. Meanwhile, the MeV positron beam is pulsed with an ultrashort duration of tens of femtoseconds and has a high peak intensity of 7.8 × 1021 s-1, thus allows specific studies of fast kinetics in millimeter-thick materials with a high time resolution and exhibits potential for applications in positron annihilation spectroscopy.

Solving the Capacitive Effect in the High-Frequency sweep for Langmuir Probe in SYMPLE

NASA Astrophysics Data System (ADS)

Pramila; Patel, J. J.; Rajpal, R.; Hansalia, C. J.; Anitha, V. P.; Sathyanarayana, K.

2017-04-01

Langmuir Probe based measurements need to be routinely carried out to measure various plasma parameters such as the electron density (ne), the electron temperature (Te), the floating potential (Vf), and the plasma potential (Vp). For this, the diagnostic electronics along with the biasing power supplies is installed in standard industrial racks with a 2KV isolation transformer. The Signal Conditioning Electronics (SCE) system is populated inside the 4U-chassis based system with the front-end electronics, designed using high common mode differential amplifiers which can measure small differential signal in presence of high common mode dc- bias or ac ramp voltage used for biasing the probes. DC-biasing of the probe is most common method for getting its I-V characteristic but method of biasing the probe with a sweep at high frequency encounters the problem of corruption of signal due to capacitive effect specially when the sweep period and the discharge time is very fast and die down in the order of μs or lesser. This paper presents and summarises the method of removing such effects encountered while measuring the probe current.

Mathematics for Electronics.

ERIC Educational Resources Information Center

Clary, Joseph R.; Nery, Karen P.

This set of 20 modules was designed for use primarily to help teach and reinforce the basic mathematics skills in electronics classes. The modules are based on electronics competencies that require mathematics skills, as determined by a panel of high school electronics and mathematics teachers. Each module consists of one or two pages of basic…

Forecasting and remote sensing outer belt relativistic electrons from low Earth orbit

DOE PAGES

Chen, Yue; Reeves, Geoffrey D.; Cunningham, Gregory S.; ...

2016-02-15

Our study demonstrates the feasibility and reliability of using observations from low Earth orbit (LEO) to forecast and nowcast relativistic electrons in the outer radiation belt. Furthermore, we first report a high cross-energy, cross-pitch-angle coherence discovered between the trapped MeV electrons and precipitating approximately hundreds (~100s) of keV electrons—observed by satellites with very different altitudes—with correlation coefficients as high as ≳ 0.85. We then tested the feasibility of applying linear prediction filters to LEO data to predict the arrival of new MeV electrons during geomagnetic storms, as well as their evolving distributions afterward, based on the coherence. Reliability of thesemore » predictive filters is quantified by the performance efficiency with values as high as 0.74 when driven merely by LEO observations (or up to 0.94 with the inclusion of in situ MeV electron measurements). Finally, a hypothesis based upon the wave-particle resonance theory is proposed to explain the coherence, and a first-principle electron tracing model yields supporting evidence.« less

Aluminum/vacuum multilayer configuration for spatial high-energy electron shielding via electron return effects induced by magnetic field.

PubMed

Chen, Tuo; Tang, Xiaobin; Chen, Feida; Ni, Minxuan; Huang, Hai; Zhang, Yun; Chen, Da

2017-06-26

Radiation shielding of high-energy electrons is critical for successful space missions. However, conventional passive shielding systems exhibit several limitations, such as heavy configuration, poor shielding ability, and strong secondary bremsstrahlung radiation. In this work, an aluminum/vacuum multilayer structure was proposed based on the electron return effects induced by magnetic field. The shielding property of several configurations was evaluated by using the Monte Carlo method. Results showed that multilayer systems presented improved shielding ability to electrons, and less secondary x-ray transmissions than those of conventional systems. Moreover, the influences of magnetic flux density and number of layers on the shielding property of multilayer systems were investigated using a female Chinese hybrid reference phantom based on cumulative dose. In the case of two aluminum layers, the cumulative dose in a phantom gradually decreased with increasing magnetic flux density. The maximum decline rate was found within 0.4-1 Tesla. With increasing layers of configuration, the cumulative dose decreased and the shielding ability improved. This research provides effective shielding measures for future space radiation protection in high-energy electron environments.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen, Yue; Reeves, Geoffrey D.; Cunningham, Gregory S.

Our study demonstrates the feasibility and reliability of using observations from low Earth orbit (LEO) to forecast and nowcast relativistic electrons in the outer radiation belt. Furthermore, we first report a high cross-energy, cross-pitch-angle coherence discovered between the trapped MeV electrons and precipitating approximately hundreds (~100s) of keV electrons—observed by satellites with very different altitudes—with correlation coefficients as high as ≳ 0.85. We then tested the feasibility of applying linear prediction filters to LEO data to predict the arrival of new MeV electrons during geomagnetic storms, as well as their evolving distributions afterward, based on the coherence. Reliability of thesemore » predictive filters is quantified by the performance efficiency with values as high as 0.74 when driven merely by LEO observations (or up to 0.94 with the inclusion of in situ MeV electron measurements). Finally, a hypothesis based upon the wave-particle resonance theory is proposed to explain the coherence, and a first-principle electron tracing model yields supporting evidence.« less

Mechanical design and fabrication of the VHF-gun, the Berkeley normal-conducting continuous-wave high-brightness electron source

NASA Astrophysics Data System (ADS)

Wells, R. P.; Ghiorso, W.; Staples, J.; Huang, T. M.; Sannibale, F.; Kramasz, T. D.

2016-02-01

A high repetition rate, MHz-class, high-brightness electron source is a key element in future high-repetition-rate x-ray free electron laser-based light sources. The VHF-gun, a novel low frequency radio-frequency gun, is the Lawrence Berkeley National Laboratory (LBNL) response to that need. The gun design is based on a normal conducting, single cell cavity resonating at 186 MHz in the VHF band and capable of continuous wave operation while still delivering the high accelerating fields at the cathode required for the high brightness performance. The VHF-gun was fabricated and successfully commissioned in the framework of the Advanced Photo-injector EXperiment, an injector built at LBNL to demonstrate the capability of the gun to deliver the required beam quality. The basis for the selection of the VHF-gun technology, novel design features, and fabrication techniques are described.

Mechanical design and fabrication of the VHF-gun, the Berkeley normal-conducting continuous-wave high-brightness electron source.

PubMed

Wells, R P; Ghiorso, W; Staples, J; Huang, T M; Sannibale, F; Kramasz, T D

2016-02-01

A high repetition rate, MHz-class, high-brightness electron source is a key element in future high-repetition-rate x-ray free electron laser-based light sources. The VHF-gun, a novel low frequency radio-frequency gun, is the Lawrence Berkeley National Laboratory (LBNL) response to that need. The gun design is based on a normal conducting, single cell cavity resonating at 186 MHz in the VHF band and capable of continuous wave operation while still delivering the high accelerating fields at the cathode required for the high brightness performance. The VHF-gun was fabricated and successfully commissioned in the framework of the Advanced Photo-injector EXperiment, an injector built at LBNL to demonstrate the capability of the gun to deliver the required beam quality. The basis for the selection of the VHF-gun technology, novel design features, and fabrication techniques are described.

Upgrade possibilities for continuous wave rf electron guns based on room-temperature very high frequency technology

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sannibale, F.; Filippetto, D.; Johnson, M.

The past decade was characterized by an increasing scientific demand for extending towards higher repetition rates (MHz class and beyond) the performance of already operating lower repetition rate accelerator-based instruments such as x-ray free electron lasers (FELs) and ultrafast electron diffraction (UED) and microscopy (UEM) instruments. Such a need stimulated a worldwide spread of a vibrant R & D activity targeting the development of high-brightness electron sources capable of operating at these challenging rates. Among the different technologies pursued, rf guns based on room-temperature structures resonating in the very high frequency (VHF) range (30-300 MHz) and operating in continuous wavemore » successfully demonstrated in the past few years the targeted brightness and reliability. Nonetheless, recently proposed upgrades for x-ray FELs and the always brightness-frontier applications such as UED and UEM are now requiring a further step forward in terms of beam brightness in electron sources. Here, we present a few possible upgrade paths that would allow one to extend, in a relatively simple and cost-effective way, the performance of the present VHF technology to the required new goals.« less

Upgrade possibilities for continuous wave rf electron guns based on room-temperature very high frequency technology

DOE PAGES

Sannibale, F.; Filippetto, D.; Johnson, M.; ...

2017-11-27

The past decade was characterized by an increasing scientific demand for extending towards higher repetition rates (MHz class and beyond) the performance of already operating lower repetition rate accelerator-based instruments such as x-ray free electron lasers (FELs) and ultrafast electron diffraction (UED) and microscopy (UEM) instruments. Such a need stimulated a worldwide spread of a vibrant R & D activity targeting the development of high-brightness electron sources capable of operating at these challenging rates. Among the different technologies pursued, rf guns based on room-temperature structures resonating in the very high frequency (VHF) range (30-300 MHz) and operating in continuous wavemore » successfully demonstrated in the past few years the targeted brightness and reliability. Nonetheless, recently proposed upgrades for x-ray FELs and the always brightness-frontier applications such as UED and UEM are now requiring a further step forward in terms of beam brightness in electron sources. Here, we present a few possible upgrade paths that would allow one to extend, in a relatively simple and cost-effective way, the performance of the present VHF technology to the required new goals.« less

Near atomically smooth alkali antimonide photocathode thin films

DOE PAGES

Feng, Jun; Karkare, Siddharth; Nasiatka, James; ...

2017-01-24

Nano-roughness is one of the major factors degrading the emittance of electron beams that can be generated by high efficiency photocathodes, such as the thermally reacted alkali antimonide thin films. In this paper, we demonstrate a co-deposition based method for producing alkali antimonide cathodes that produce near atomic smoothness with high reproducibility. Here, we calculate the effect of the surface roughness on the emittance and show that such smooth cathode surfaces are essential for operation of alkali antimonide cathodes in high field, low emittance radio frequency electron guns and to obtain ultracold electrons for ultrafast electron diffraction applications.

Near atomically smooth alkali antimonide photocathode thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Feng, Jun; Karkare, Siddharth; Nasiatka, James

Nano-roughness is one of the major factors degrading the emittance of electron beams that can be generated by high efficiency photocathodes, such as the thermally reacted alkali antimonide thin films. In this paper, we demonstrate a co-deposition based method for producing alkali antimonide cathodes that produce near atomic smoothness with high reproducibility. Here, we calculate the effect of the surface roughness on the emittance and show that such smooth cathode surfaces are essential for operation of alkali antimonide cathodes in high field, low emittance radio frequency electron guns and to obtain ultracold electrons for ultrafast electron diffraction applications.

600 C Logic Gates Using Silicon Carbide JFET's

NASA Technical Reports Server (NTRS)

Neudeck, Philip G.; Beheim, Glenn M.; Salupo, Carl S.a

2000-01-01

Complex electronics and sensors are increasingly being relied on to enhance the capabilities and efficiency of modernjet aircraft. Some of these electronics and sensors monitor and control vital engine components and aerosurfaces that operate at high temperatures above 300 C. However, since today's silicon-based electronics technology cannot function at such high temperatures, these electronics must reside in environmentally controlled areas. This necessitates either the use of long wire runs between sheltered electronics and hot-area sensors and controls, or the fuel cooling of electronics and sensors located in high-temperature areas. Both of these low-temperature-electronics approaches suffer from serious drawbacks in terms of increased weight, decreased fuel efficiency, and reduction of aircraft reliability. A family of high-temperature electronics and sensors that could function in hot areas would enable substantial aircraft performance gains. Especially since, in the future, some turbine-engine electronics may need to function at temperatures as high as 600 C. This paper reports the fabrication and demonstration of the first semiconductor digital logic gates ever to function at 600 C. Key obstacles blocking the realization of useful 600 C turbine engine integrated sensor and control electronics are outlined.

Using electron irradiation to probe iron-based superconductors

NASA Astrophysics Data System (ADS)

Cho, Kyuil; Kończykowski, M.; Teknowijoyo, S.; Tanatar, M. A.; Prozorov, R.

2018-06-01

High-energy electron irradiation at low temperatures is an efficient and controlled way to create vacancy–interstitial Frenkel pairs in a crystal lattice, thereby inducing nonmagnetic point-like scattering centers. In combination with London penetration depth and resistivity measurements, the electron irradiation was used as a phase-sensitive probe to study the superconducting order parameter in iron-based superconductors (FeSCs), lending strong support to sign-changing s ± pairing. Here, we review the key results of the effect of electron irradiation in FeSCs.

Development of inorganic resists for electron beam lithography: Novel materials and simulations

NASA Astrophysics Data System (ADS)

Jeyakumar, Augustin

Electron beam lithography is gaining widespread utilization as the semiconductor industry progresses towards both advanced optical and non-optical lithographic technologies for high resolution patterning. The current resist technologies are based on organic systems that are imaged most commonly through chain scission, networking, or a chemically amplified polarity change in the material. Alternative resists based on inorganic systems were developed and characterized in this research for high resolution electron beam lithography and their interactions with incident electrons were investigated using Monte Carlo simulations. A novel inorganic resist imaging scheme was developed using metal-organic precursors which decompose to form metal oxides upon electron beam irradiation that can serve as inorganic hard masks for hybrid bilayer inorganic-organic imaging systems and also as directly patternable high resolution metal oxide structures. The electron beam imaging properties of these metal-organic materials were correlated to the precursor structure by studying effects such as interactions between high atomic number species and the incident electrons. Optimal single and multicomponent precursors were designed for utilization as viable inorganic resist materials for sub-50nm patterning in electron beam lithography. The electron beam imaging characteristics of the most widely used inorganic resist material, hydrogen silsesquioxane (HSQ), was also enhanced using a dual processing imaging approach with thermal curing as well as a sensitizer catalyzed imaging approach. The interaction between incident electrons and the high atomic number species contained in these inorganic resists was also studied using Monte Carlo simulations. The resolution attainable using inorganic systems as compared to organic systems can be greater for accelerating voltages greater than 50 keV due to minimized lateral scattering in the high density inorganic systems. The effects of loading nanoparticles in an electron beam resist was also investigated using a newly developed hybrid Monte Carlo approach that accounts for multiple components in a solid film. The resolution of the nanocomposite resist process was found to degrade with increasing nanoparticle loading. Finally, the electron beam patterning of self-assembled monolayers, which were found to primarily utilize backscattered electrons from the high atomic number substrate materials to form images, was also investigated and characterized. It was found that backscattered electrons limit the resolution attainable at low incident electron energies.

High flux, narrow bandwidth compton light sources via extended laser-electron interactions

DOEpatents

Barty, V P

2015-01-13

New configurations of lasers and electron beams efficiently and robustly produce high flux beams of bright, tunable, polarized quasi-monoenergetic x-rays and gamma-rays via laser-Compton scattering. Specifically, the use of long-duration, pulsed lasers and closely-spaced, low-charge and low emittance bunches of electron beams increase the spectral flux of the Compton-scattered x-rays and gamma rays, increase efficiency of the laser-electron interaction and significantly reduce the overall complexity of Compton based light sources.

An experimental investigation of hollow cathode-based plasma contactors. Ph.D. Thesis

NASA Technical Reports Server (NTRS)

Williams, John D.

1991-01-01

Experimental results are presented which describe operation of the plasma environment associated with a hollow cathod-based plasma contactor collecting electrons from or emitting them to an ambient, low density Maxwellian plasma. A one-dimensional, phenomenological model of the near-field electron collection process, which was formulated from experimental observations, is presented. It considers three regions, namely, a plasma cloud adjacent to the contactor, an ambient plasma from which electrons are collected, and a double layer region that develops between the contactor plasma cloud and the ambient plasma regions. Results of the electron emission experiments are also presented. An important observation is made using a retarding potential analyzer (RPA) which shows that high energy ions generally stream from a contactor along with the electrons being emitted. A mechanism for this phenomenon is presented and it involves a high rate of ionization induced between electrons and atoms flowing together from the hollow cathode orifice. This can result in the development of a region of high positive potential. Langmuir and RPA probe data suggest that both electrons and ions expand spherically from this hill region. In addition to experimental observations, a one-dimensional model which describes the electron emission process and predicts the phenomena just mentioned is presented and shown to agree qualitatively with these observations.

Influences of Gate Bias and Light Stresses on Device Characteristics of High-Energy Electron-Beam-Irradiated Indium Gallium Zinc Oxide Based Thin Film Transistors

NASA Astrophysics Data System (ADS)

Yu, Kyeong Min; Moon, Hye Ji; Ryu, Min Ki; Cho, Kyoung Ik; Yun, Eui-Jung; Bae, Byung Seong

2012-09-01

Under white light illumination, amorphous indium-gallium-zinc oxide (a-IGZO)-based thin-film transistors (TFTs) showed a large negative shift of threshold voltage of more than -15 V depending on the process conditions. We investigated the influences of both gate bias and white light illumination on device properties of IGZO-based TFTs untreated and treated with high-energy electron beam irradiation (HEEBI). The TFTs were treated with HEEBI in air at room temperature (RT), electron beam energy of 0.8 MeV, and a dose of 1×1014 electrons/cm2. The HEEBI-treated TFTs showed an improved stability under negative bias illumination stress (NBIS) and positive bias illumination stress (PBIS) compared with non-HEEBI-treated TFTs, suggesting that the acceptor-like defects might be generated by HEEBI treatment near the valence band edge.

Photoemission-based microelectronic devices

PubMed Central

Forati, Ebrahim; Dill, Tyler J.; Tao, Andrea R.; Sievenpiper, Dan

2016-01-01

The vast majority of modern microelectronic devices rely on carriers within semiconductors due to their integrability. Therefore, the performance of these devices is limited due to natural semiconductor properties such as band gap and electron velocity. Replacing the semiconductor channel in conventional microelectronic devices with a gas or vacuum channel may scale their speed, wavelength and power beyond what is available today. However, liberating electrons into gas/vacuum in a practical microelectronic device is quite challenging. It often requires heating, applying high voltages, or using lasers with short wavelengths or high powers. Here, we show that the interaction between an engineered resonant surface and a low-power infrared laser can cause enough photoemission via electron tunnelling to implement feasible microelectronic devices such as transistors, switches and modulators. The proposed photoemission-based devices benefit from the advantages of gas-plasma/vacuum electronic devices while preserving the integrability of semiconductor-based devices. PMID:27811946

Ionospheric effects of the simultaneous occurrence of a solar proton event and relativistic electron precipitation as recorded by ground-based instruments at different latitudes

NASA Astrophysics Data System (ADS)

Shirochkov, A. V.; Makarova, L. N.; Sokolov, S. N.; Sheldon, W. R.

2004-08-01

The intense event of highly relativistic electron (HRE) precipitation of May 1992 has been analyzed using data from ground-based observations (riometers and VLF phase measurements). Special attention was given to some features of this event observed at high and very high geomagnetic latitudes, since this aspect of the event was not well documented in previous studies. A remarkable feature of the HRE event of May 1992 was the simultaneous occurrence of a strong solar proton event (SPE), although reliable evidence shows that the simultaneous appearance of SPE and HRE events is not unique. It was demonstrated that a meridian chain of riometers with high latitudinal resolution is an effective and low-cost (as compared with satellite observations) tool to separate the effects of solar proton and relativistic electrons in the lower ionosphere. A significant conclusion is that the polar cap area is free from relativistic electron precipitation. Other interesting aspects of this complex geophysical phenomenon are also discussed.

High Energy Electron Injection (E-Beam) Technology for the 'Ex-Situ' Treatment of MtBE-Contaminated Groundwater

NASA Astrophysics Data System (ADS)

Venosa, A. D.

2002-09-01

This Innovative Technology Evaluation Report documents the results of a demonstration of the high-energy electron injection (E-Beam) technology in application to groundwater contaminated with methyl t-butyl ether (MtBE) and with benzene, toluene, ethylbenzene, and xylenes (BTEX). The E-beam technology destroys organic contaminants in groundwater through irradiation with a beam of high-energy electrons. The demonstration was conducted at the Naval Base Ventura County (NBVC) in Port Hueneme, California.

Thiazole-based organic semiconductors for organic electronics.

PubMed

Lin, Yuze; Fan, Haijun; Li, Yongfang; Zhan, Xiaowei

2012-06-19

Over the past two decades, organic semiconductors have been the subject of intensive academic and commercial interests. Thiazole is a common electron-accepting heterocycle due to electron-withdrawing nitrogen of imine (C=N), several moieties based on thiazole have been widely introduced into organic semiconductors, and yielded high performance in organic electronic devices. This article reviews recent developments in the area of thiazole-based organic semiconductors, particularly thiazole, bithiazole, thiazolothiazole and benzobisthiazole-based small molecules and polymers, for applications in organic field-effect transistors, solar cells and light-emitting diodes. The remaining problems and challenges, and the key research direction in near future are discussed. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Balancing Hole and Electron Conduction in Ambipolar Split-Gate Thin-Film Transistors.

PubMed

Yoo, Hocheon; Ghittorelli, Matteo; Lee, Dong-Kyu; Smits, Edsger C P; Gelinck, Gerwin H; Ahn, Hyungju; Lee, Han-Koo; Torricelli, Fabrizio; Kim, Jae-Joon

2017-07-10

Complementary organic electronics is a key enabling technology for the development of new applications including smart ubiquitous sensors, wearable electronics, and healthcare devices. High-performance, high-functionality and reliable complementary circuits require n- and p-type thin-film transistors with balanced characteristics. Recent advancements in ambipolar organic transistors in terms of semiconductor and device engineering demonstrate the great potential of this route but, unfortunately, the actual development of ambipolar organic complementary electronics is currently hampered by the uneven electron (n-type) and hole (p-type) conduction in ambipolar organic transistors. Here we show ambipolar organic thin-film transistors with balanced n-type and p-type operation. By manipulating air exposure and vacuum annealing conditions, we show that well-balanced electron and hole transport properties can be easily obtained. The method is used to control hole and electron conductions in split-gate transistors based on a solution-processed donor-acceptor semiconducting polymer. Complementary logic inverters with balanced charging and discharging characteristics are demonstrated. These findings may open up new opportunities for the rational design of complementary electronics based on ambipolar organic transistors.

Current gain above 10 in sub-10 nm base III-Nitride tunneling hot electron transistors with GaN/AlN emitter

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang, Zhichao, E-mail: zcyang.phys@gmail.com; Zhang, Yuewei; Krishnamoorthy, Sriram

We report on a tunneling hot electron transistor amplifier with common-emitter current gain greater than 10 at a collector current density in excess of 40 kA/cm{sup 2}. The use of a wide-bandgap GaN/AlN (111 nm/2.5 nm) emitter was found to greatly improve injection efficiency of the emitter and reduce cold electron leakage. With an ultra-thin (8 nm) base, 93% of the injected hot electrons were collected, enabling a common-emitter current gain up to 14.5. This work improves understanding of the quasi-ballistic hot electron transport and may impact the development of high speed devices based on unipolar hot electron transport.

Inductively Coupled Plasma and Electron Cyclotron Resonance Plasma Etching of InGaAlP Compound Semiconductor System

DOE Office of Scientific and Technical Information (OSTI.GOV)

Abernathy, C.R.; Hobson, W.S.; Hong, J.

1998-11-04

Current and future generations of sophisticated compound semiconductor devices require the ability for submicron scale patterning. The situation is being complicated since some of the new devices are based on a wider diversity of materials to be etched. Conventional IUE (Reactive Ion Etching) has been prevalent across the industry so far, but has limitations for materials with high bond strengths or multiple elements. IrI this paper, we suggest high density plasmas such as ECR (Electron Cyclotron Resonance) and ICP (Inductively Coupled Plasma), for the etching of ternary compound semiconductors (InGaP, AIInP, AlGaP) which are employed for electronic devices like heterojunctionmore » bipolar transistors (HBTs) or high electron mobility transistors (HEMTs), and photonic devices such as light-emitting diodes (LEDs) and lasers. High density plasma sources, opeiating at lower pressure, are expected to meet target goals determined in terms of etch rate, surface morphology, surface stoichiometry, selectivity, etc. The etching mechanisms, which are described in this paper, can also be applied to other III-V (GaAs-based, InP-based) as well as III-Nitride since the InGaAIP system shares many of the same properties.« less

The ERL-based Design of Electron-Hadron Collider eRHIC

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ptitsyn, Vadim

2016-06-01

Recent developments of the ERL-based design of future high-luminosity electron-hadron collider eRHIC focused on balancing technological risks present in the design versus the design cost. As a result a lower risk design has been adopted at moderate cost increase. The modifications include a change of the main linac RF frequency, reduced number of SRF cavity types and modified electron spin transport using a spin rotator. A luminosity-staged approach is being explored with a Nominal design (more » $$L \\sim 10^{33} {\\rm cm}^2 {\\rm s}^{-1}$$) that employs reduced electron current and could possibly be based on classical electron cooling, and then with the Ultimate design ($$L \\gt 10^{34} {\\rm cm}^{-2} {\\rm s}^{-1}$$) that uses higher electron current and an innovative cooling technique (CeC). The paper describes the recent design modifications, and presents the full status of the eRHIC ERL-based design.« less

Next Generation Non-Vacuum, Maskless, Low Temperature Nanoparticle Ink Laser Digital Direct Metal Patterning for a Large Area Flexible Electronics

PubMed Central

Yeo, Junyeob; Hong, Sukjoon; Lee, Daehoo; Hotz, Nico; Lee, Ming-Tsang; Grigoropoulos, Costas P.; Ko, Seung Hwan

2012-01-01

Flexible electronics opened a new class of future electronics. The foldable, light and durable nature of flexible electronics allows vast flexibility in applications such as display, energy devices and mobile electronics. Even though conventional electronics fabrication methods are well developed for rigid substrates, direct application or slight modification of conventional processes for flexible electronics fabrication cannot work. The future flexible electronics fabrication requires totally new low-temperature process development optimized for flexible substrate and it should be based on new material too. Here we present a simple approach to developing a flexible electronics fabrication without using conventional vacuum deposition and photolithography. We found that direct metal patterning based on laser-induced local melting of metal nanoparticle ink is a promising low-temperature alternative to vacuum deposition– and photolithography-based conventional metal patterning processes. The “digital” nature of the proposed direct metal patterning process removes the need for expensive photomask and allows easy design modification and short turnaround time. This new process can be extremely useful for current small-volume, large-variety manufacturing paradigms. Besides, simple, scalable, fast and low-temperature processes can lead to cost-effective fabrication methods on a large-area polymer substrate. The developed process was successfully applied to demonstrate high-quality Ag patterning (2.1 µΩ·cm) and high-performance flexible organic field effect transistor arrays. PMID:22900011

Next generation non-vacuum, maskless, low temperature nanoparticle ink laser digital direct metal patterning for a large area flexible electronics.

PubMed

Yeo, Junyeob; Hong, Sukjoon; Lee, Daehoo; Hotz, Nico; Lee, Ming-Tsang; Grigoropoulos, Costas P; Ko, Seung Hwan

2012-01-01

Flexible electronics opened a new class of future electronics. The foldable, light and durable nature of flexible electronics allows vast flexibility in applications such as display, energy devices and mobile electronics. Even though conventional electronics fabrication methods are well developed for rigid substrates, direct application or slight modification of conventional processes for flexible electronics fabrication cannot work. The future flexible electronics fabrication requires totally new low-temperature process development optimized for flexible substrate and it should be based on new material too. Here we present a simple approach to developing a flexible electronics fabrication without using conventional vacuum deposition and photolithography. We found that direct metal patterning based on laser-induced local melting of metal nanoparticle ink is a promising low-temperature alternative to vacuum deposition- and photolithography-based conventional metal patterning processes. The "digital" nature of the proposed direct metal patterning process removes the need for expensive photomask and allows easy design modification and short turnaround time. This new process can be extremely useful for current small-volume, large-variety manufacturing paradigms. Besides, simple, scalable, fast and low-temperature processes can lead to cost-effective fabrication methods on a large-area polymer substrate. The developed process was successfully applied to demonstrate high-quality Ag patterning (2.1 µΩ·cm) and high-performance flexible organic field effect transistor arrays.

Crystallography of decahedral and icosahedral particles. II - High symmetry orientations

NASA Technical Reports Server (NTRS)

Yang, C. Y.; Yacaman, M. J.; Heinemann, K.

1979-01-01

Based on the exact crystal structure of decahedral and icosahedral particles, high energy electron diffraction patterns and image profiles have been derived for various high symmetry orientations of the particles with respect to the incident beam. These results form a basis for the identification of small metal particle structures with advanced methods of transmission electron microscopy.

Cubic Calorimeter for High-Energy Electrons in Ultra-Long Ballooning

NASA Technical Reports Server (NTRS)

Moiseev, Alexander A.; Mitchell, John W.; Ormes, Jonathan F.; Streitmatter, Robert E.

2003-01-01

The concept and optimization study of a balloon-borne instrument to study high-energy (from 100 GeV to 5 TeV) cosmic ray electrons will be presented. This energy range of electrons is very interesting for the study of cosmic ray propagation and the search for the nearby sources of high-energy electrons. The instrument is based on a cubic design that allows the detection from all sides. Proton rejection is provided by stringent track analysis, which allows defining when an electron shower is exhausted while the hadron shower continues development. The collecting power of a nominal balloon-borne instrument using this concept will be over 2 square meters sr. This will provide approximately 3,000 electron events above 500 GeV for 3-month long ULDB flight. This instrument will also be capable of detecting sharp features in the high energy gamma-ray spectrum such as gamma-ray lines originating from the dark matter annihilation.

SiC Technology

NASA Technical Reports Server (NTRS)

Neudeck, Philip G.

1998-01-01

Silicon carbide (SiC)-based semiconductor electronic devices and circuits are presently being developed for use in high-temperature, high-power, and/or high-radiation conditions under which conventional semiconductors cannot adequately perform. Silicon carbide's ability to function under such extreme conditions is expected to enable significant improvements to a far-ranging variety of applications and systems. These range from greatly improved high-voltage switching [1- 4] for energy savings in public electric power distribution and electric motor drives to more powerful microwave electronics for radar and communications [5-7] to sensors and controls for cleaner-burning more fuel-efficient jet aircraft and automobile engines. In the particular area of power devices, theoretical appraisals have indicated that SiC power MOSFET's and diode rectifiers would operate over higher voltage and temperature ranges, have superior switching characteristics, and yet have die sizes nearly 20 times smaller than correspondingly rated silicon-based devices [8]. However, these tremendous theoretical advantages have yet to be realized in experimental SiC devices, primarily due to the fact that SiC's relatively immature crystal growth and device fabrication technologies are not yet sufficiently developed to the degree required for reliable incorporation into most electronic systems [9]. This chapter briefly surveys the SiC semiconductor electronics technology. In particular, the differences (both good and bad) between SiC electronics technology and well-known silicon VLSI technology are highlighted. Projected performance benefits of SiC electronics are highlighted for several large-scale applications. Key crystal growth and device-fabrication issues that presently limit the performance and capability of high temperature and/or high power SiC electronics are identified.

Silicon Carbide Technology

NASA Technical Reports Server (NTRS)

Neudeck, Philip G.

2006-01-01

Silicon carbide based semiconductor electronic devices and circuits are presently being developed for use in high-temperature, high-power, and high-radiation conditions under which conventional semiconductors cannot adequately perform. Silicon carbide's ability to function under such extreme conditions is expected to enable significant improvements to a far-ranging variety of applications and systems. These range from greatly improved high-voltage switching for energy savings in public electric power distribution and electric motor drives to more powerful microwave electronics for radar and communications to sensors and controls for cleaner-burning more fuel-efficient jet aircraft and automobile engines. In the particular area of power devices, theoretical appraisals have indicated that SiC power MOSFET's and diode rectifiers would operate over higher voltage and temperature ranges, have superior switching characteristics, and yet have die sizes nearly 20 times smaller than correspondingly rated silicon-based devices [8]. However, these tremendous theoretical advantages have yet to be widely realized in commercially available SiC devices, primarily owing to the fact that SiC's relatively immature crystal growth and device fabrication technologies are not yet sufficiently developed to the degree required for reliable incorporation into most electronic systems. This chapter briefly surveys the SiC semiconductor electronics technology. In particular, the differences (both good and bad) between SiC electronics technology and the well-known silicon VLSI technology are highlighted. Projected performance benefits of SiC electronics are highlighted for several large-scale applications. Key crystal growth and device-fabrication issues that presently limit the performance and capability of high-temperature and high-power SiC electronics are identified.

Active Remote Detection of Radioactivity Based on Electromagnetic Signatures

DTIC Science & Technology

2013-08-15

electron with energy eE therefore generates EEe ∆/~ low energy electrons. In the case of Compton absorption, the maximum electron energy is max,))21/(2...γγγ αα EEe += where 2 max, /mcγγα E= . For example, a 1 MeV gamma ray in air generates Compton electrons having a maximum energy of MeV8.0= eE ...and average energy of MeV44.0= eE . It should be noted that the range of high energy electrons is much less than the range of the high energy gammas

Packaging Technology Developed for High-Temperature Silicon Carbide Microsystems

NASA Technical Reports Server (NTRS)

Chen, Liang-Yu; Hunter, Gary W.; Neudeck, Philip G.

2001-01-01

High-temperature electronics and sensors are necessary for harsh-environment space and aeronautical applications, such as sensors and electronics for space missions to the inner solar system, sensors for in situ combustion and emission monitoring, and electronics for combustion control for aeronautical and automotive engines. However, these devices cannot be used until they can be packaged in appropriate forms for specific applications. Suitable packaging technology for operation temperatures up to 500 C and beyond is not commercially available. Thus, the development of a systematic high-temperature packaging technology for SiC-based microsystems is essential for both in situ testing and commercializing high-temperature SiC sensors and electronics. In response to these needs, researchers at Glenn innovatively designed, fabricated, and assembled a new prototype electronic package for high-temperature electronic microsystems using ceramic substrates (aluminum nitride and aluminum oxide) and gold (Au) thick-film metallization. Packaging components include a ceramic packaging frame, thick-film metallization-based interconnection system, and a low electrical resistance SiC die-attachment scheme. Both the materials and fabrication process of the basic packaging components have been tested with an in-house-fabricated SiC semiconductor test chip in an oxidizing environment at temperatures from room temperature to 500 C for more than 1000 hr. These test results set lifetime records for both high-temperature electronic packaging and high-temperature electronic device testing. As required, the thick-film-based interconnection system demonstrated low (2.5 times of the room-temperature resistance of the Au conductor) and stable (decreased 3 percent in 1500 hr of continuous testing) electrical resistance at 500 C in an oxidizing environment. Also as required, the electrical isolation impedance between printed wires that were not electrically joined by a wire bond remained high (greater than 0.4 GW) at 500 C in air. The attached SiC diode demonstrated low (less than 3.8 W/mm2) and relatively consistent dynamic resistance from room temperature to 500 C. These results indicate that the prototype package and the compatible die-attach scheme meet the initial design standards for high-temperature, low-power, and long-term operation. This technology will be further developed and evaluated, especially with more mechanical tests of each packaging element for operation at higher temperatures and longer lifetimes.

Construction and commissioning of the compact energy-recovery linac at KEK

NASA Astrophysics Data System (ADS)

Akemoto, Mitsuo; Arakawa, Dai; Asaoka, Seiji; Cenni, Enrico; Egi, Masato; Enami, Kazuhiro; Endo, Kuninori; Fukuda, Shigeki; Furuya, Takaaki; Haga, Kaiichi; Hajima, Ryoichi; Hara, Kazufumi; Harada, Kentaro; Honda, Tohru; Honda, Yosuke; Honma, Teruya; Hosoyama, Kenji; Kako, Eiji; Katagiri, Hiroaki; Kawata, Hiroshi; Kobayashi, Yukinori; Kojima, Yuuji; Kondou, Yoshinari; Tanaka, Olga; Kume, Tatsuya; Kuriki, Masao; Matsumura, Hiroshi; Matsushita, Hideki; Michizono, Shinichiro; Miura, Takako; Miyajima, Tsukasa; Nagahashi, Shinya; Nagai, Ryoji; Nakai, Hirotaka; Nakajima, Hiromitsu; Nakamura, Norio; Nakanishi, Kota; Nigorikawa, Kazuyuki; Nishimori, Nobuyuki; Nogami, Takashi; Noguchi, Shuichi; Obina, Takashi; Qiu, Feng; Sagehashi, Hidenori; Sakai, Hiroshi; Sakanaka, Shogo; Sasaki, Shinichi; Satoh, Kotaro; Sawamura, Masaru; Shimada, Miho; Shinoe, Kenji; Shishido, Toshio; Tadano, Mikito; Takahashi, Takeshi; Takai, Ryota; Takenaka, Tateru; Tanimoto, Yasunori; Uchiyama, Takashi; Ueda, Akira; Umemori, Kensei; Watanabe, Ken; Yamamoto, Masahiro

2018-01-01

Energy-recovery linacs (ERLs) are promising for advanced synchrotron light sources, high-power free electron lasers (FELs), high-brightness gamma-ray sources, and electron-ion colliders. To demonstrate the critical technology of ERL-based light sources, we have designed and constructed a test accelerator, the compact ERL (cERL). Using advanced technology that includes a photocathode direct current (DC) electron gun and two types of 1.3-GHz-frequency superconducting cavities, the cERL was designed to be capable of recirculating low emittance (≤1 mm ṡ mrad) and high average-current (≥10 mA) electron beams while recovering the beam energy. During initial commissioning, the cERL demonstrated successful recirculation of high-quality beams with normalized transverse emittance of ∼0.14 mm ṡ mrad and momentum spread of ∼1.2 × 10-4 (rms) at a beam energy of 20 MeV and bunch charge below 100 fC. Energy recovery in the superconducting main linac was also demonstrated for high-average-current continuous-wave beams. These results constitute an important milestone toward realizing ERL-based light sources.

Hot carrier-enhanced interlayer electron-hole pair multiplication in 2D semiconductor heterostructure photocells

NASA Astrophysics Data System (ADS)

Barati, Fatemeh; Grossnickle, Max; Su, Shanshan; Lake, Roger K.; Aji, Vivek; Gabor, Nathaniel M.

2017-12-01

Strong electronic interactions can result in novel particle-antiparticle (electron-hole, e-h) pair generation effects, which may be exploited to enhance the photoresponse of nanoscale optoelectronic devices. Highly efficient e-h pair multiplication has been demonstrated in several important nanoscale systems, including nanocrystal quantum dots, carbon nanotubes and graphene. The small Fermi velocity and nonlocal nature of the effective dielectric screening in ultrathin layers of transition-metal dichalcogenides (TMDs) indicates that e-h interactions are very strong, so high-efficiency generation of e-h pairs from hot electrons is expected. However, such e-h pair multiplication has not been observed in 2D TMD devices. Here, we report the highly efficient multiplication of interlayer e-h pairs in 2D semiconductor heterostructure photocells. Electronic transport measurements of the interlayer I-VSD characteristics indicate that layer-indirect e-h pairs are generated by hot-electron impact excitation at temperatures near T = 300 K. By exploiting this highly efficient interlayer e-h pair multiplication process, we demonstrate near-infrared optoelectronic devices that exhibit 350% enhancement of the optoelectronic responsivity at microwatt power levels. Our findings, which demonstrate efficient carrier multiplication in TMD-based optoelectronic devices, make 2D semiconductor heterostructures viable for a new class of ultra-efficient photodetectors based on layer-indirect e-h excitations.

Refinement procedure for the image alignment in high-resolution electron tomography.

PubMed

Houben, L; Bar Sadan, M

2011-01-01

High-resolution electron tomography from a tilt series of transmission electron microscopy images requires an accurate image alignment procedure in order to maximise the resolution of the tomogram. This is the case in particular for ultra-high resolution where even very small misalignments between individual images can dramatically reduce the fidelity of the resultant reconstruction. A tomographic-reconstruction based and marker-free method is proposed, which uses an iterative optimisation of the tomogram resolution. The method utilises a search algorithm that maximises the contrast in tomogram sub-volumes. Unlike conventional cross-correlation analysis it provides the required correlation over a large tilt angle separation and guarantees a consistent alignment of images for the full range of object tilt angles. An assessment based on experimental reconstructions shows that the marker-free procedure is competitive to the reference of marker-based procedures at lower resolution and yields sub-pixel accuracy even for simulated high-resolution data. Copyright © 2011 Elsevier B.V. All rights reserved.

Reproducible Growth of High-Quality Cubic-SiC Layers

NASA Technical Reports Server (NTRS)

Neudeck, Philip G.; Powell, J. Anthony

2004-01-01

Semiconductor electronic devices and circuits based on silicon carbide (SiC) are being developed for use in high-temperature, high-power, and/or high-radiation conditions under which devices made from conventional semiconductors cannot adequately perform. The ability of SiC-based devices to function under such extreme conditions is expected to enable significant improvements in a variety of applications and systems. These include greatly improved high-voltage switching for saving energy in public electric power distribution and electric motor drives; more powerful microwave electronic circuits for radar and communications; and sensors and controls for cleaner-burning, more fuel-efficient jet aircraft and automobile engines.

Electron-induced electron yields of uncharged insulating materials

NASA Astrophysics Data System (ADS)

Hoffmann, Ryan Carl

Presented here are electron-induced electron yield measurements from high-resistivity, high-yield materials to support a model for the yield of uncharged insulators. These measurements are made using a low-fluence, pulsed electron beam and charge neutralization to minimize charge accumulation. They show charging induced changes in the total yield, as much as 75%, even for incident electron fluences of <3 fC/mm2, when compared to an uncharged yield. The evolution of the yield as charge accumulates in the material is described in terms of electron recapture, based on the extended Chung and Everhart model of the electron emission spectrum and the dual dynamic layer model for internal charge distribution. This model is used to explain charge-induced total yield modification measured in high-yield ceramics, and to provide a method for determining electron yield of uncharged, highly insulating, high-yield materials. A sequence of materials with progressively greater charge susceptibility is presented. This series starts with low-yield Kapton derivative called CP1, then considers a moderate-yield material, Kapton HN, and ends with a high-yield ceramic, polycrystalline aluminum oxide. Applicability of conductivity (both radiation induced conductivity (RIC) and dark current conductivity) to the yield is addressed. Relevance of these results to spacecraft charging is also discussed.

International Free Electron Laser Conference (15th) Held in The Hague, Netherland on August 23-27, 1993. Book of Abstracts

DTIC Science & Technology

1993-08-27

University, Korea Mo3-23 Two Color FEL Complex Based on High Current Race - Track Microtron E.B. Gaskevich, A.I. Karev, V.G. Kurakin Lebedev Institute...Free Electron Laser Using Race - Track Microtron -Recuperator GI. Erg, N.G. Gavrilov, El. Gorniker, G.N. Kulipanov, I.V. Kuptsov, G.Ya. Kurkin, A.D...FEL COMPLEX BASED ON HIGH CURRENT RACE - TRACK MICROTRON a.kejich, A.I.Karev, V.G.Kurakin Department of High Energy Physics, Lebedev Physical Institute

Development of a high average current polarized electron source with long cathode operational lifetime

DOE Office of Scientific and Technical Information (OSTI.GOV)

C. K. Sinclair; P. A. Adderley; B. M. Dunham

Substantially more than half of the electromagnetic nuclear physics experiments conducted at the Continuous Electron Beam Accelerator Facility of the Thomas Jefferson National Accelerator Facility (Jefferson Laboratory) require highly polarized electron beams, often at high average current. Spin-polarized electrons are produced by photoemission from various GaAs-based semiconductor photocathodes, using circularly polarized laser light with photon energy slightly larger than the semiconductor band gap. The photocathodes are prepared by activation of the clean semiconductor surface to negative electron affinity using cesium and oxidation. Historically, in many laboratories worldwide, these photocathodes have had short operational lifetimes at high average current, and havemore » often deteriorated fairly quickly in ultrahigh vacuum even without electron beam delivery. At Jefferson Lab, we have developed a polarized electron source in which the photocathodes degrade exceptionally slowly without electron emission, and in which ion back bombardment is the predominant mechanism limiting the operational lifetime of the cathodes during electron emission. We have reproducibly obtained cathode 1/e dark lifetimes over two years, and 1/e charge density and charge lifetimes during electron beam delivery of over 2?105???C/cm2 and 200 C, respectively. This source is able to support uninterrupted high average current polarized beam delivery to three experimental halls simultaneously for many months at a time. Many of the techniques we report here are directly applicable to the development of GaAs photoemission electron guns to deliver high average current, high brightness unpolarized beams.« less

Contribution from individual nearby sources to the spectrum of high-energy cosmic-ray electrons

NASA Astrophysics Data System (ADS)

Sedrati, R.; Attallah, R.

2014-04-01

In the last few years, very important data on high-energy cosmic-ray electrons and positrons from high-precision space-born and ground-based experiments have attracted a great deal of interest. These particles represent a unique probe for studying local comic-ray accelerators because they lose energy very rapidly. These energy losses reduce the lifetime so drastically that high-energy cosmic-ray electrons can attain the Earth only from rather local astrophysical sources. This work aims at calculating, by means of Monte Carlo simulation, the contribution from some known nearby astrophysical sources to the cosmic-ray electron/positron spectra at high energy (≥ 10 GeV). The background to the electron energy spectrum from distant sources is determined with the help of the GALPROP code. The obtained numerical results are compared with a set of experimental data.

High energy electrons beyond 100 GEV observed by emulsion chamber

NASA Technical Reports Server (NTRS)

Nishimura, J.; Fujii, M.; Yoshida, A.; Taira, T.; Aizu, H.; Nomura, Y.; Kobayashi, T.; Kazuno, M.; Nishio, A.; Golden, R. L.

1986-01-01

Much efforts have been expended to observe the spectrum of electrons in the high energy region with large area emulsion chambers exposed at balloon altitudes, and now 15 electrons beyond 1 TeV have been observed. The observed integral flux at 1 TeV is (3.24 + or - 0.87)x10(-5)/sq m sec sr. The statistics of the data around a few hundred GeV are also improving by using new shower detecting films of high sensitivity. The astrophysical significance of the observed spectrum are discussed for the propagation of electrons based on the leaky box and the nested leaky box model.

Practical Electronics. Technical Instruction Manual.

ERIC Educational Resources Information Center

Systems Operation Support, Inc., King of Prussia, PA.

This student instruction manual was developed as a part of "A Study of The Effectiveness of a Military-Type Computer-Based Instructional System When Used in Civilian High School Courses in Electronics and Auto Mechanics." (VT 006 916). The material emphasizes a troubleshooting strategy for repair of equipment based upon a logical and systematic…

Highly sensitive, self-powered and wearable electronic skin based on pressure-sensitive nanofiber woven fabric sensor.

PubMed

Zhou, Yuman; He, Jianxin; Wang, Hongbo; Qi, Kun; Nan, Nan; You, Xiaolu; Shao, Weili; Wang, Lidan; Ding, Bin; Cui, Shizhong

2017-10-11

The wearable electronic skin with high sensitivity and self-power has shown increasing prospects for applications such as human health monitoring, robotic skin, and intelligent electronic products. In this work, we introduced and demonstrated a design of highly sensitive, self-powered, and wearable electronic skin based on a pressure-sensitive nanofiber woven fabric sensor fabricated by weaving PVDF electrospun yarns of nanofibers coated with PEDOT. Particularly, the nanofiber woven fabric sensor with multi-leveled hierarchical structure, which significantly induced the change in contact area under ultra-low load, showed combined superiority of high sensitivity (18.376 kPa -1 , at ~100 Pa), wide pressure range (0.002-10 kPa), fast response time (15 ms) and better durability (7500 cycles). More importantly, an open-circuit voltage signal of the PPNWF pressure sensor was obtained through applying periodic pressure of 10 kPa, and the output open-circuit voltage exhibited a distinct switching behavior to the applied pressure, indicating the wearable nanofiber woven fabric sensor could be self-powered under an applied pressure. Furthermore, we demonstrated the potential application of this wearable nanofiber woven fabric sensor in electronic skin for health monitoring, human motion detection, and muscle tremor detection.

Electronic-To-Optical-To-Electronic Packet-Data Conversion

NASA Technical Reports Server (NTRS)

Monacos, Steve

1996-01-01

Space-time multiplexer (STM) cell-based communication system designed to take advantage of both high throughput attainable in optical transmission links and flexibility and functionality of electronic processing, storage, and switching. Long packets segmented and transmitted optically by wavelength-division multiplexing. Performs optoelectronic and protocol conversion between electronic "store-and-forward" protocols and optical "hot-potato" protocols.

High-performance electronics for time-of-flight PET systems

NASA Astrophysics Data System (ADS)

Choong, W.-S.; Peng, Q.; Vu, C. Q.; Turko, B. T.; Moses, W. W.

2013-01-01

We have designed and built a high-performance readout electronics system for time-of-flight positron emission tomography (TOF PET) cameras. The electronics architecture is based on the electronics for a commercial whole-body PET camera (Siemens/CPS Cardinal electronics), modified to improve the timing performance. The fundamental contributions in the electronics that can limit the timing resolution include the constant fraction discriminator (CFD), which converts the analog electrical signal from the photo-detector to a digital signal whose leading edge is time-correlated with the input signal, and the time-to-digital converter (TDC), which provides a time stamp for the CFD output. Coincident events are identified by digitally comparing the values of the time stamps. In the Cardinal electronics, the front-end processing electronics are performed by an Analog subsection board, which has two application-specific integrated circuits (ASICs), each servicing a PET block detector module. The ASIC has a built-in CFD and TDC. We found that a significant degradation in the timing resolution comes from the ASIC's CFD and TDC. Therefore, we have designed and built an improved Analog subsection board that replaces the ASIC's CFD and TDC with a high-performance CFD (made with discrete components) and TDC (using the CERN high-performance TDC ASIC). The improved Analog subsection board is used in a custom single-ring LSO-based TOF PET camera. The electronics system achieves a timing resolution of 60 ps FWHM. Prototype TOF detector modules are read out with the electronics system and give coincidence timing resolutions of 259 ps FWHM and 156 ps FWHM for detector modules coupled to LSO and LaBr3 crystals respectively.

High-performance electronics for time-of-flight PET systems.

PubMed

Choong, W-S; Peng, Q; Vu, C Q; Turko, B T; Moses, W W

2013-01-01

We have designed and built a high-performance readout electronics system for time-of-flight positron emission tomography (TOF PET) cameras. The electronics architecture is based on the electronics for a commercial whole-body PET camera (Siemens/CPS Cardinal electronics), modified to improve the timing performance. The fundamental contributions in the electronics that can limit the timing resolution include the constant fraction discriminator (CFD), which converts the analog electrical signal from the photo-detector to a digital signal whose leading edge is time-correlated with the input signal, and the time-to-digital converter (TDC), which provides a time stamp for the CFD output. Coincident events are identified by digitally comparing the values of the time stamps. In the Cardinal electronics, the front-end processing electronics are performed by an Analog subsection board, which has two application-specific integrated circuits (ASICs), each servicing a PET block detector module. The ASIC has a built-in CFD and TDC. We found that a significant degradation in the timing resolution comes from the ASIC's CFD and TDC. Therefore, we have designed and built an improved Analog subsection board that replaces the ASIC's CFD and TDC with a high-performance CFD (made with discrete components) and TDC (using the CERN high-performance TDC ASIC). The improved Analog subsection board is used in a custom single-ring LSO-based TOF PET camera. The electronics system achieves a timing resolution of 60 ps FWHM. Prototype TOF detector modules are read out with the electronics system and give coincidence timing resolutions of 259 ps FWHM and 156 ps FWHM for detector modules coupled to LSO and LaBr 3 crystals respectively.

Discovery of the Electronic Spectra of Hps and Dps

NASA Astrophysics Data System (ADS)

Grimminger, Robert A.; Wei, Jie; Ellis, Blaine; Clouthier, Dennis J.; Wang, Zhong; Sears, Trevor

2009-06-01

The hitherto unknown electronic spectrum of the closed shell transient molecule HPS has been observed in the 685 - 846 nm region by laser-induced fluorescence and single vibronic level emission techniques. HPS (and DPS) were produced in a pulsed electric discharge jet using a precursor mixture of 3% PH_3 and 1% H_2S (or PD_3 and D_2S) in high pressure argon. The weak set of observed bands are assigned to the à ^1A^''-X˜ ^1A^' electronic transition on the basis of chemical evidence, isotope shifts and the correspondence of the vibrational frequencies, excitation energy, and band contours with predictions based on our own high level ab initio calculations. Theory predicts that the HPS bond angle decreases on electronic excitation, contrary to expectations based on Walsh diagrams.

Recent advances in molecular electronics based on carbon nanotubes.

PubMed

Bourgoin, Jean-Philippe; Campidelli, Stéphane; Chenevier, Pascale; Derycke, Vincent; Filoramo, Arianna; Goffman, Marcelo F

2010-01-01

Carbon nanotubes (CNTs) have exceptional physical properties that make them one of the most promising building blocks for future nanotechnologies. They may in particular play an important role in the development of innovative electronic devices in the fields of flexible electronics, ultra-high sensitivity sensors, high frequency electronics, opto-electronics, energy sources and nano-electromechanical systems (NEMS). Proofs of concept of several high performance devices already exist, usually at the single device level, but there remain many serious scientific issues to be solved before the viability of such routes can be evaluated. In particular, the main concern regards the controlled synthesis and positioning of nanotubes. In our opinion, truly innovative use of these nano-objects will come from: (i) the combination of some of their complementary physical properties, such as combining their electrical and mechanical properties, (ii) the combination of their properties with additional benefits coming from other molecules grafted on the nanotubes, and (iii) the use of chemically- or bio-directed self-assembly processes to allow the efficient combination of several devices into functional arrays or circuits. In this article, we outline the main issues concerning the development of carbon nanotubes based electronics applications and review our recent results in the field.

Frontend electronics for high-precision single photo-electron timing using FPGA-TDCs

NASA Astrophysics Data System (ADS)

Cardinali, M.; Dzyhgadlo, R.; Gerhardt, A.; Götzen, K.; Hohler, R.; Kalicy, G.; Kumawat, H.; Lehmann, D.; Lewandowski, B.; Patsyuk, M.; Peters, K.; Schepers, G.; Schmitt, L.; Schwarz, C.; Schwiening, J.; Traxler, M.; Ugur, C.; Zühlsdorf, M.; Dodokhov, V. Kh.; Britting, A.; Eyrich, W.; Lehmann, A.; Uhlig, F.; Düren, M.; Föhl, K.; Hayrapetyan, A.; Kröck, B.; Merle, O.; Rieke, J.; Cowie, E.; Keri, T.; Montgomery, R.; Rosner, G.; Achenbach, P.; Corell, O.; Ferretti Bondy, M. I.; Hoek, M.; Lauth, W.; Rosner, C.; Sfienti, C.; Thiel, M.; Bühler, P.; Gruber, L.; Marton, J.; Suzuki, K.

2014-12-01

The next generation of high-luminosity experiments requires excellent particle identification detectors which calls for Imaging Cherenkov counters with fast electronics to cope with the expected hit rates. A Barrel DIRC will be used in the central region of the Target Spectrometer of the planned PANDA experiment at FAIR. A single photo-electron timing resolution of better than 100 ps is required by the Barrel DIRC to disentangle the complicated patterns created on the image plane. R&D studies have been performed to provide a design based on the TRB3 readout using FPGA-TDCs with a precision better than 20 ps RMS and custom frontend electronics with high-bandwidth pre-amplifiers and fast discriminators. The discriminators also provide time-over-threshold information thus enabling walk corrections to improve the timing resolution. Two types of frontend electronics cards optimised for reading out 64-channel PHOTONIS Planacon MCP-PMTs were tested: one based on the NINO ASIC and the other, called PADIWA, on FPGA discriminators. Promising results were obtained in a full characterisation using a fast laser setup and in a test experiment at MAMI, Mainz, with a small scale DIRC prototype.

A tapered multi-gap multi-aperture pseudospark-sourced electron gun based X-band slow wave oscillator

NASA Astrophysics Data System (ADS)

Kumar, N.; Lamba, R. P.; Hossain, A. M.; Pal, U. N.; Phelps, A. D. R.; Prakash, R.

2017-11-01

The experimental study of a tapered, multi-gap, multi-aperture pseudospark-sourced electron gun based X-band plasma assisted slow wave oscillator is presented. The designed electron gun is based on the pseudospark discharge concept and has been used to generate a high current density and high energy electron beam simultaneously. The distribution of apertures has been arranged such that the field penetration potency inside the backspace of the hollow-cathode is different while passing through the tapered gap region. This leads to non-concurrent ignition of the discharge through all the channels which is, in general, quite challenging in the case of multi-aperture plasma cathode electron gun geometries. Multiple and successive hollow cathode phases are reported from this electron gun geometry, which have been confirmed using simulations. This geometry also has led to the achievement of ˜71% fill factor inside the slow wave oscillator for an electron beam of energy of 20 keV and a beam current density in the range of 115-190 A/cm2 at a working argon gas pressure of 18 Pa. The oscillator has generated broadband microwave output in the frequency range of 10-11.7 GHz with a peak power of ˜10 kW for ˜50 ns.

Study of Electron Polarization Dynamics in the JLEIC at Jlab

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lin, Fanglei; Derbenev, Yaroslav; Morozov, Vasiliy

The design of an electron polarization scheme in the Jefferson Lab Electron-Ion Collider (JLEIC) aims to attain a high longitudinal electron polarization (over 70%) at collision points as required by the nuclear physics program. Comprehensive strategies for achieving this goal have been considered and developed including injection of highly polarized electrons from CEBAF, mechanisms for manipulation and preservation of the polarization in the JLEIC collider ring and measurement of the electron polarization. In particular, maintaining a sufficiently long polarization lifetime is crucial for accumulation of adequate experimental statistics. The chosen electron polarization configuration, based on the unique figure-8 geometry ofmore » the ring, removes the electron spin-tune energy dependence. This significantly simplifies the control of the electron polarization and suppresses the synchrotron sideband resonances. This paper reports recent studies and simulations of the electron polarization dynamics in the JLEIC electron collider ring.« less

Quantum computers based on electron spins controlled by ultrafast off-resonant single optical pulses.

PubMed

Clark, Susan M; Fu, Kai-Mei C; Ladd, Thaddeus D; Yamamoto, Yoshihisa

2007-07-27

We describe a fast quantum computer based on optically controlled electron spins in charged quantum dots that are coupled to microcavities. This scheme uses broadband optical pulses to rotate electron spins and provide the clock signal to the system. Nonlocal two-qubit gates are performed by phase shifts induced by electron spins on laser pulses propagating along a shared waveguide. Numerical simulations of this scheme demonstrate high-fidelity single-qubit and two-qubit gates with operation times comparable to the inverse Zeeman frequency.

High quality transmission Kikuchi diffraction analysis of deformed alloys - Case study

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tokarski, Tomasz, E-mail: tokarski@agh.edu.pl

Modern scanning electron microscopes (SEM) equipped with thermally assisted field emission guns (Schottky FEG) are capable of imaging with a resolution in the range of several nanometers or better. Simultaneously, the high electron beam current can be used, which enables fast chemical and crystallographic analysis with a higher resolution than is normally offered by SEM with a tungsten cathode. The current resolution that limits the EDS and EBSD analysis is related to materials' physics, particularly to the electron-specimen interaction volume. The application of thin, electron-transparent specimens, instead of bulk samples, improves the resolution and allows for the detailed analysis ofmore » very fine microstructural features. Beside the typical imaging mode, it is possible to use a standard EBSD camera in such a configuration that only transmitted and scattered electrons are detected. This modern approach was successfully applied to various materials giving rise to significant resolution improvement, especially for the light element magnesium based alloys. This paper presents an insight into the application of the transmission Kikuchi diffraction (TKD) technique applied to the most troublesome, heavily-deformed materials. In particular, the values of the highest possible acquisition rates for high resolution and high quality mapping were estimated within typical imaging conditions of stainless steel and magnesium-yttrium alloy. - Highlights: •Monte Carlo simulations were used to simulate EBSD camera intensity for various measuring conditions. •Transmission Kikuchi diffraction parameters were evaluated for highly deformed, light and heavy elements based alloys. •High quality maps with 20 nm spatial resolution were acquired for Mg and Fe based alloys. •High speed TKD measurements were performed at acquisition rates comparable to the reflection EBSD.« less

Characteristic electron variations across simple high-speed solar wind streams

NASA Technical Reports Server (NTRS)

Feldman, W. C.; Asbridge, J. R.; Bame, S. J.; Gosling, J. T.; Lemons, D. S.

1978-01-01

The paper deals with electron variations across simple high-speed streams. Comprehensive scans of the shapes of electron distributions measured at the highest bulk speeds confirm the results of Rosenbauer et al. (1976, 1977) and show that the electron velocity distributions can be broken down into a low-energy or core component and a high-energy strongly beamed component. The low-energy component displays many characteristics expected from a fluid: the internal particle coupling necessary to maintain this state must result from both binary Coulomb collisions and wave-particle interactions. The high-energy or halo component displays many characteristics expected to develop in the absence of collisions beyond a certain base radius. These electrons appear to evolve under the primary influence of static interplanetary magnetic and electric fields and, therefore, develop very anisotropic velocity distributions.

[Study of the effect of heat source separation distance on plasma physical properties in laser-pulsed GMAW hybrid welding based on spectral diagnosis technique].

PubMed

Liao, Wei; Hua, Xue-Ming; Zhang, Wang; Li, Fang

2014-05-01

In the present paper, the authors calculated the plasma's peak electron temperatures under different heat source separation distance in laser- pulse GMAW hybrid welding based on Boltzmann spectrometry. Plasma's peak electron densities under the corresponding conditions were also calculated by using the Stark width of the plasma spectrum. Combined with high-speed photography, the effect of heat source separation distance on electron temperature and electron density was studied. The results show that with the increase in heat source separation distance, the electron temperatures and electron densities of laser plasma did not changed significantly. However, the electron temperatures of are plasma decreased, and the electron densities of are plasma first increased and then decreased.

Highly charged ion based time of flight emission microscope

DOEpatents

Barnes, Alan V.; Schenkel, Thomas; Hamza, Alex V.; Schneider, Dieter H.; Doyle, Barney

2001-01-01

A highly charged ion based time-of-flight emission microscope has been designed, which improves the surface sensitivity of static SIMS measurements because of the higher ionization probability of highly charged ions. Slow, highly charged ions are produced in an electron beam ion trap and are directed to the sample surface. The sputtered secondary ions and electrons pass through a specially designed objective lens to a microchannel plate detector. This new instrument permits high surface sensitivity (10.sup.10 atoms/cm.sup.2), high spatial resolution (100 nm), and chemical structural information due to the high molecular ion yields. The high secondary ion yield permits coincidence counting, which can be used to enhance determination of chemical and topological structure and to correlate specific molecular species.

High-Temperature Gas Sensor Array (Electronic Nose) Demonstrated

NASA Technical Reports Server (NTRS)

Hunter, Gary W.

2002-01-01

The ability to measure emissions from aeronautic engines and in commercial applications such as automotive emission control and chemical process monitoring is a necessary first step if one is going to actively control those emissions. One single sensor will not give all the information necessary to determine the chemical composition of a high-temperature, harsh environment. Rather, an array of gas sensor arrays--in effect, a high-temperature electronic "nose"--is necessary to characterize the chemical constituents of a diverse, high-temperature environment, such as an emissions stream. The signals produced by this nose could be analyzed to determine the constituents of the emission stream. Although commercial electronic noses for near-room temperature applications exist, they often depend significantly on lower temperature materials or only one sensor type. A separate development effort necessary for a high-temperature electronic nose is being undertaken by the NASA Glenn Research Center, Case Western Reserve University, Ohio State University, and Makel Engineering, Inc. The sensors are specially designed for hightemperature environments. A first-generation high-temperature electronic nose has been demonstrated on a modified automotive engine. This nose sensor array was composed of sensors designed for hightemperature environments fabricated using microelectromechanical-systems- (MEMS-) based technology. The array included a tin-oxide-based sensor doped for nitrogen oxide (NOx) sensitivity, a SiC-based hydrocarbon (CxHy) sensor, and an oxygen sensor (O2). These sensors operate on different principles--resistor, diode, and electrochemical cell, respectively--and each sensor has very different responses to the individual gases in the environment. A picture showing the sensor head for the array is shown in the photograph on the left and the sensors installed in the engine are shown in the photograph on the right. Electronics are interfaced with the sensors for temperature control and signal conditioning, and packaging designed for high temperatures is necessary for the array to survive the engine environment.

A new strategy to produce low-density polyethylene (LDPE)-based composites simultaneously with high flame retardancy and high mechanical properties

NASA Astrophysics Data System (ADS)

Shen, Liguo; Li, Jianxi; Li, Renjie; Lin, Hongjun; Chen, Jianrong; Liao, Bao-Qiang

2018-04-01

In this study, a new strategy which blends low-density polyethylene (LDPE), magnesium hydroxide (MH) and lauryl acrylate by electron-beam radiation for production of LDPE-based composites with high performance was proposed. It was found that, MH played main roles in flame retardancy but reduced processing flow and mechanical properties of the composites. Meanwhile, melt flow rate (MFR) increased while viscosity of the composites decreased with lauryl acrylate content increased, facilitating LDPE composites processing. Electron beam radiation could prompt crosslinking of lauryl acrylate, which significantly enhanced the mechanical properties of LDPE composites. Meanwhile, lauryl acrylate addition only slightly decreased the flame retardancy, suggesting that LDPE composites could remain high flame retardancy even when lauryl acrylate content was high. The study highly demonstrated the feasibility to produce LDPE-based composites simultaneously with high flame retardancy and high mechanical properties by the blending strategy provided in this study.

Computer conferencing: the "nurse" in the "Electronic School District".

PubMed

Billings, D M; Phillips, A

1991-01-01

As computer-based instructional technologies become increasingly available, they offer new mechanisms for health educators to provide health instruction. This article describes a pilot project in which nurses established a computer conference to provide health instruction to high school students participating in an electronic link of high schools. The article discusses computer conferencing, the "Electronic School District," the design of the nursing conference, and the role of the nurse in distributed health education.

Electron beam irradiated ITO films as highly transparent p-type electrodes for GaN-based LEDs.

PubMed

Hong, C H; Wie, S M; Park, M J; Kwak, J S

2013-08-01

We have investigated the effect of electron beam irradiation on the electrical and optical properties of ITO film prepared by magnetron sputtering method at room temperature. Electron beam irradiation to the ITO films resulted in a significant decrease in sheet resistance from 1.28 x 10(-3) omega cm to 2.55 x 10(-4) omega cm and in a great increase in optical band gap from 3.72 eV to 4.16 eV, followed by improved crystallization and high transparency of 97.1% at a wavelength of 485 nm. The overall change in electrical, optical and structural properties of ITO films is related to annealing effect and energy transfer of electron by electron beam irradiation. We also fabricated GaN-based light-emitting diodes (LEDs) by using the ITO p-type electrode with/without electron beam irradiation. The results show that the LEDs having ITO p-electrode with electron beam irradiation produced higher output power due to the low absorption of light in the p-type electrode.

Bay-annulated indigo (BAI) as an excellent electron accepting building block for high performance organic semiconductors

DOEpatents

Liu, Yi; He, Bo; Pun, Andrew

2015-11-24

A novel electron acceptor based on bay-annulated indigo (BAI) was synthesized and used for the preparation of a series of high performance donor-acceptor small molecules and polymers. The resulting materials possess low-lying LUMO energy level and small HOMO-LUMO gaps, while their films exhibited high crystallinity upon thermal treatment, commensurate with high field effect mobilities and ambipolar transfer characteristics.

Bay-annulated indigo (BAI) as an excellent electron accepting building block for high performance organic semiconductors

DOEpatents

Liu, Yi; He, Bo; Pun, Andrew

2016-04-19

A novel electron acceptor based on bay-annulated indigo (BAI) was synthesized and used for the preparation of a series of high performance donor-acceptor small molecules and polymers. The resulting materials possess low-lying LUMO energy level and small HOMO-LUMO gaps, while their films exhibited high crystallinity upon thermal treatment, commensurate with high field effect mobilities and ambipolar transfer characteristics.

Comparative dosimetric characterization for different types of detectors in high-energy electron beams

NASA Astrophysics Data System (ADS)

Lee, Chang Yeol; Kim, Woo Chul; Kim, Hun Jeong; Huh, Hyun Do; Park, Seungwoo; Choi, Sang Hyoun; Kim, Kum Bae; Min, Chul Kee; Kim, Seong Hoon; Shin, Dong Oh

2017-02-01

The purpose of this study is to perform a comparison and on analysis of measured dose factor values by using various commercially available high-energy electron beam detectors to measure dose profiles and energy property data. By analyzing the high-energy electron beam data from each detector, we determined the optimal detector for measuring electron beams in clinical applications. The dose linearity, dose-rate dependence, percentage depth dose, and dose profile of each detector were measured to evaluate the dosimetry characteristics of high-energy electron beams. The dose profile and the energy characteristics of high-energy electron beams were found to be different when measured by different detectors. Through comparison with other detectors based on the analyzed data, the microdiamond detector was found to have outstanding dose linearity, a low dose-rate dependency, and a small effective volume. Thus, this detector has outstanding spatial resolution and is the optimal detector for measuring electron beams. Radiation therapy results can be improved and related medical accidents can be prevented by using the procedure developed in this research in clinical practice for all beam detectors when measuring the electron beam dose.

Lithography-based fabrication of nanopore arrays in freestanding SiN and graphene membranes

NASA Astrophysics Data System (ADS)

Verschueren, Daniel V.; Yang, Wayne; Dekker, Cees

2018-04-01

We report a simple and scalable technique for the fabrication of nanopore arrays on freestanding SiN and graphene membranes based on electron-beam lithography and reactive ion etching. By controlling the dose of the single-shot electron-beam exposure, circular nanopores of any size down to 16 nm in diameter can be fabricated in both materials at high accuracy and precision. We demonstrate the sensing capabilities of these nanopores by translocating dsDNA through pores fabricated using this method, and find signal-to-noise characteristics on par with transmission-electron-microscope-drilled nanopores. This versatile lithography-based approach allows for the high-throughput manufacturing of nanopores and can in principle be used on any substrate, in particular membranes made out of transferable two-dimensional materials.

Space Station - The base for tomorrow's electronic industry

NASA Technical Reports Server (NTRS)

Naumann, Robert J.

1985-01-01

The potential value of space material processing on the Space Station for the electronics industry is examined. The primary advantages of the space environment for producing high-purity semiconductors and electrooptical materials are identified as the virtual absence of gravity (suppressing buoyancy-driven convection in melts and density segregation of alloys) and the availabilty of high vacuum (with high pumping speed and heat rejection). The recent history of material development and processing technology in the electronics industry is reviewed, and the principal features of early space experiments are outlined.

Electronics drivers for high voltage dielectric electro active polymer (DEAP) applications

NASA Astrophysics Data System (ADS)

Zhang, Zhe; Andersen, Michael A. E.

2015-04-01

Dielectric electro active polymer (DEAP) can be used in actuation, sensing and energy harvesting applications, but driving the DEAP based actuators and generators has three main challenges from a power electronics standpoint, i.e. high voltage (around 2.5 kV), nonlinearity, and capacitive behavior. In this paper, electronics divers for heating valves, loud speakers, incremental motors, and energy harvesting are reviewed, studied and developed in accordance with their corresponding specifications. Due to the simplicity and low power capacity (below 10W), the reversible Fly-back converters with both magnetic and piezoelectric transformers are employed for the heating valve and incremental motor application, where only ON/OFF regulation is adopted for energy saving; as for DEAP based energy harvesting, the noisolated Buck/Boost converter is used, due to the system high power capacity (above 100W), but the voltage balancing across the series-connected high voltage IGBTs is a critical issue and accordingly a novel gate driver circuitry is proposed and equipped; due to the requirements of the audio products, such as low distortion and noise, the multi-level Buck converter based Class-D amplifier, because of its high control linearity, is implemented for the loud speaker applications. A synthesis among those converter topologies and control techniques is given; therefore, for those DEAP based applications, their diversity and similarity of electronics drivers, as well as the key technologies employed are analyzed. Therefore a whole picture of how to choose the proper topologies can be revealed. Finally, the design guidelines in order to achieve high efficiency and reliability are discussed.

Radiation testing campaign results for understanding the suitability of FPGAs in detector electronics

DOE PAGES

Citterio, M.; Camplani, A.; Cannon, M.; ...

2015-11-19

SRAM based Field Programmable Gate Arrays (FPGAs) have been rarely used in High Energy Physics (HEP) due to their sensitivity to radiation. The last generation of commercial FPGAs based on 28 nm feature size and on Silicon On Insulator (SOI) technologies are more tolerant to radiation to the level that their use in front-end electronics is now feasible. FPGAs provide re-programmability, high-speed computation and fast data transmission through the embedded serial transceivers. They could replace custom application specific integrated circuits in front end electronics in locations with moderate radiation field. Finally, the use of a FPGA in HEP experiments ismore » only limited by our ability to mitigate single event effects induced by the high energy hadrons present in the radiation field.« less

Electron Source based on Superconducting RF

NASA Astrophysics Data System (ADS)

Xin, Tianmu

High-bunch-charge photoemission electron-sources operating in a Continuous Wave (CW) mode can provide high peak current as well as the high average current which are required for many advanced applications of accelerators facilities, for example, electron coolers for hadron beams, electron-ion colliders, and Free-Electron Lasers (FELs). Superconducting Radio Frequency (SRF) has many advantages over other electron-injector technologies, especially when it is working in CW mode as it offers higher repetition rate. An 112 MHz SRF electron photo-injector (gun) was developed at Brookhaven National Laboratory (BNL) to produce high-brightness and high-bunch-charge bunches for electron cooling experiments. The gun utilizes a Quarter-Wave Resonator (QWR) geometry for a compact structure and improved electron beam dynamics. The detailed RF design of the cavity, fundamental coupler and cathode stalk are presented in this work. A GPU accelerated code was written to improve the speed of simulation of multipacting, an important hurdle the SRF structure has to overcome in various locations. The injector utilizes high Quantum Efficiency (QE) multi-alkali photocathodes (K2CsSb) for generating electrons. The cathode fabrication system and procedure are also included in the thesis. Beam dynamic simulation of the injector was done with the code ASTRA. To find the optimized parameters of the cavities and beam optics, the author wrote a genetic algorithm Python script to search for the best solution in this high-dimensional parameter space. The gun was successfully commissioned and produced world record bunch charge and average current in an SRF photo-injector.

Note: An improved 3D imaging system for electron-electron coincidence measurements

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lin, Yun Fei; Lee, Suk Kyoung; Adhikari, Pradip

We demonstrate an improved imaging system that can achieve highly efficient 3D detection of two electrons in coincidence. The imaging system is based on a fast frame complementary metal-oxide semiconductor camera and a high-speed waveform digitizer. We have shown previously that this detection system is capable of 3D detection of ions and electrons with good temporal and spatial resolution. Here, we show that with a new timing analysis algorithm, this system can achieve an unprecedented dead-time (<0.7 ns) and dead-space (<1 mm) when detecting two electrons. A true zero dead-time detection is also demonstrated.

Note: An improved 3D imaging system for electron-electron coincidence measurements

NASA Astrophysics Data System (ADS)

Lin, Yun Fei; Lee, Suk Kyoung; Adhikari, Pradip; Herath, Thushani; Lingenfelter, Steven; Winney, Alexander H.; Li, Wen

2015-09-01

We demonstrate an improved imaging system that can achieve highly efficient 3D detection of two electrons in coincidence. The imaging system is based on a fast frame complementary metal-oxide semiconductor camera and a high-speed waveform digitizer. We have shown previously that this detection system is capable of 3D detection of ions and electrons with good temporal and spatial resolution. Here, we show that with a new timing analysis algorithm, this system can achieve an unprecedented dead-time (<0.7 ns) and dead-space (<1 mm) when detecting two electrons. A true zero dead-time detection is also demonstrated.

Electron energy and electron trajectories in an inverse free-electron laser accelerator based on a novel electrostatic wiggler

NASA Astrophysics Data System (ADS)

Nikrah, M.; Jafari, S.

2016-06-01

We expand here a theory of a high-gradient laser-excited electron accelerator based on an inverse free-electron laser (inverse-FEL), but with innovations in the structure and design. The electrostatic wiggler used in our scheme, namely termed the Paul wiggler, is generated by segmented cylindrical electrodes with applied oscillatory voltages {{V}\\text{osc}}(t) over {{90}\\circ} segments. The inverse-FEL interaction can be described by the equations that govern the electron motion in the combined fields of both the laser pulse and Paul wiggler field. A numerical study of electron energy and electron trajectories has been made using the fourth-order Runge-Kutta method. The results indicate that the electron attains a considerable energy at short distances in this device. It is found that if the electron has got sufficient suitable wiggler amplitude intensities, it can not only gain higher energy in longer distances, but also can retain it even after the passing of the laser pulse. In addition, the results reveal that the electron energy gains different peaks for different initial axial velocities, so that a suitable small initial axial velocity of e-beam produces substantially high energy gain. With regard to the transverse confinement of the electron beam in a Paul wiggler, there is no applied axial guide magnetic field in this device.

Radio-frequency flexible and stretchable electronics: the need, challenges and opportunities

NASA Astrophysics Data System (ADS)

Jung, Yei Hwan; Seo, Jung-Hun; Zhang, Huilong; Lee, Juhwan; Cho, Sang June; Chang, Tzu-Hsuan; Ma, Zhenqiang

2017-05-01

Successful integration of ultrathin flexible or stretchable systems with new applications, such as medical devices and biodegradable electronics, have intrigued many researchers and industries around the globe to seek materials and processes to create high-performance, non-invasive and cost-effective electronics to match those of state-of-the-art devices. Nevertheless, the crucial concept of transmitting data or power wirelessly for such unconventional devices has been difficult to realize due to limitations of radio-frequency (RF) electronics in individual components that form a wireless circuitry, such as antenna, transmission line, active devices, passive devices etc. To overcome such challenges, these components must be developed in a step-by-step manner, as each component faces a number of different challenges in ultrathin formats. Here, we report on materials and design considerations for fabricating flexible and stretchable electronics systems that operate in the microwave level. High-speed flexible active devices, including cost effective Si-based strained MOSFETs, GaAs-based HBTs and GaN-based HEMTs, performing at multi-gigahertz frequencies are presented. Furthermore, flexible or stretchable passive devices, including capacitors, inductors and transmission lines that are vital parts of a microwave circuitry are also demonstrated. We also present unique applications using the presented flexible or stretchable RF components, including wearable RF electronics and biodegradable RF electronics, which were impossible to achieve using conventional rigid, wafer-based technology. Further opportunities like implantable systems exist utilizing such ultrathin RF components, which are discussed in this report as well.

Independent control of electrical and heat conduction by nanostructure designing for Si-based thermoelectric materials

PubMed Central

Yamasaka, Shuto; Watanabe, Kentaro; Sakane, Shunya; Takeuchi, Shotaro; Sakai, Akira; Sawano, Kentarou; Nakamura, Yoshiaki

2016-01-01

The high electrical and drastically-low thermal conductivities, a vital goal for high performance thermoelectric (TE) materials, are achieved in Si-based nanoarchitecture composed of Si channel layers and epitaxial Ge nanodots (NDs) with ultrahigh areal density (~1012 cm−2). In this nanoarchitecture, the ultrasmall NDs and Si channel layers play roles of phonon scattering sources and electrical conduction channels, respectively. Electron conductivity in n-type nanoacrhitecture shows high values comparable to those of epitaxial Si films despite the existence of epitaxial NDs. This is because Ge NDs mainly scattered not electrons but phonons selectively, which could be attributed to the small conduction band offset at the epitaxially-grown Si/Ge interface and high transmission probability through stacking faults. These results demonstrate an independent control of thermal and electrical conduction for phonon-glass electron-crystal TE materials by nanostructure designing and the energetic and structural interface control. PMID:26973092

Hole and Electron Extraction Layers Based on Graphene Oxide Derivatives for High-Performance Bulk Heterojunction Solar Cells

DTIC Science & Technology

2012-01-01

Yuhua Xue , Yunxiang Gao , Dingshan Yu , Michael Durstock , and Liming Dai * Hole and Electron Extraction Layers Based on Graphene Oxide...H. Wu , L. Chen , S. Su , Y. Cao , Adv. Mater. 2011 , 23 , 4636 . [ 29 ] T.-Y. Chu , S.-W. Tsang , J. Zhou , P. G. Verly , J

Electroactive polymer-based devices for e-textiles in biomedicine.

PubMed

Carpi, Federico; De Rossi, Danilo

2005-09-01

This paper describes the early conception and latest developments of electroactive polymer (EAP)-based sensors, actuators, electronic components, and power sources, implemented as wearable devices for smart electronic textiles (e-textiles). Such textiles, functioning as multifunctional wearable human interfaces, are today considered relevant promoters of progress and useful tools in several biomedical fields, such as biomonitoring, rehabilitation, and telemedicine. After a brief outline on ongoing research and the first products on e-textiles under commercial development, this paper presents the most highly performing EAP-based devices developed by our lab and other research groups for sensing, actuation, electronics, and energy generation/storage, with reference to their already demonstrated or potential applicability to electronic textiles.

Dramatic inversion of charge polarity in diketopyrrolopyrrole-based organic field-effect transistors via a simple nitrile group substitution.

PubMed

Yun, Hui-Jun; Kang, Seok-Ju; Xu, Yong; Kim, Seul Ong; Kim, Yun-Hi; Noh, Yong-Young; Kwon, Soon-Ki

2014-11-19

A record-breaking high electron mobility of 7.0 cm(2) V(-1) s(-1) for n-channel polymer OFETs is reported. By the incorporation of only one nitrile group as an electron-withdrawing function in the vinyl linkage of the DPP-based copolymer, a dramatic inversion of majority charge-carriers from holes to electrons is achieved. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Electron Beam/Laser Glazing of Iron-Base Materials.

DTIC Science & Technology

1981-07-01

alloy (-l. 5wt %Cr) steels after laser and electron beam glazing. In this work it is shown that the dramatic difference in microstructure and hardness...highly alloyed tool steels can be critical in determining the complexity of the solidification route. The analyses of M2, M42 and M7 are given in...the type described in Fe- Ni alloys (1). This con- clusion is based on optical and scanning electron microscope observation unambig- uously showing

Carbon nanotube chemistry and assembly for electronic devices

NASA Astrophysics Data System (ADS)

Derycke, Vincent; Auvray, Stéphane; Borghetti, Julien; Chung, Chia-Ling; Lefèvre, Roland; Lopez-Bezanilla, Alejandro; Nguyen, Khoa; Robert, Gaël; Schmidt, Gregory; Anghel, Costin; Chimot, Nicolas; Lyonnais, Sébastien; Streiff, Stéphane; Campidelli, Stéphane; Chenevier, Pascale; Filoramo, Arianna; Goffman, Marcelo F.; Goux-Capes, Laurence; Latil, Sylvain; Blase, Xavier; Triozon, François; Roche, Stephan; Bourgoin, Jean-Philippe

2009-05-01

Carbon nanotubes (CNTs) have exceptional physical properties that make them one of the most promising building blocks for future nanotechnologies. They may in particular play an important role in the development of innovative electronic devices in the fields of flexible electronics, ultra-high sensitivity sensors, high frequency electronics, opto-electronics, energy sources and nano-electromechanical systems (NEMS). Proofs of concept of several high performance devices already exist, usually at the single device level, but there remain many serious scientific issues to be solved before the viability of such routes can be evaluated. In particular, the main concern regards the controlled synthesis and positioning of nanotubes. In our opinion, truly innovative use of these nano-objects will come from: (i) the combination of some of their complementary physical properties, such as combining their electrical and mechanical properties; (ii) the combination of their properties with additional benefits coming from other molecules grafted on the nanotubes (this route being particularly relevant for gas- and bio-sensors, opto-electronic devices and energy sources); and (iii) the use of chemically- or bio-directed self-assembly processes to allow the efficient combination of several devices into functional arrays or circuits. In this article, we review our recent results concerning nanotube chemistry and assembly and their use to develop electronic devices. In particular, we present carbon nanotube field effect transistors and their chemical optimization, high frequency nanotube transistors, nanotube-based opto-electronic devices with memory capabilities and nanotube-based nano-electromechanical systems (NEMS). The impact of chemical functionalization on the electronic properties of CNTs is analyzed on the basis of theoretical calculations. To cite this article: V. Derycke et al., C. R. Physique 10 (2009).

Electron Surfing Acceleration in High Mach Number Shocks

NASA Astrophysics Data System (ADS)

Hoshino, M.; Amano, T.; Matsumoto, Y.

2016-12-01

Many energetic events associated with shock waves have been argued in this context of the diffusive shock acceleration (DSA), and the origin of high-energy particles observed in astrophysical shocks are believed to be attributed to DSA. However, electron nonthermal acceleration still remains an unresolved issue of considerable interest. While cosmic rays of supernova remnant shocks with power-law spectra are believed to be produced by DSA, energetic electrons with a power-law energy spectrum are rarely ever observed at interplanetary shocks and at planetary bow shocks (e.g., Lario et al. 2003), and the diffusive-type acceleration seems to be necessarily malfunctioning in the heliosphere. The malfunctioning reason is thought to be a lack of pre-acceleration mechanism of supra-thermal electrons.In this presentation, we propose that the supra-thermal electrons can be generated by the mechanism of shock surfing acceleration (SSA) in a high Mach number magnetosonic shock. In the surfing mechanism, a series of large-amplitude electrostatic waves are excited by Buneman instability in the foot region under the interaction between the reflected ions and the incoming electrons, and it is argued that the electrons trapped in the electrostatic waves can be accelerated up to a relativistic energy (Hoshino and Shimada, 2002). Since the electron SSA has been studied based on one- or two-dimensional PIC simulations so far, SSA in three-dimensional system is questionable and remains an open question. We discuss based on our theoretical model and three-dimensional PIC simulation with a high-performance computing that the efficiency of SSA in three-dimensional system remains amazingly strong and plays an important role on the electron pre-acceleration/injection problem.

Electronic and transport properties of Cobalt-based valence tautomeric molecules and polymers

NASA Astrophysics Data System (ADS)

Chen, Yifeng; Calzolari, Arrigo; Buongiorno Nardelli, Marco

2011-03-01

The advancement of molecular spintronics requires further understandings of the fundamental electronic structures and transport properties of prototypical spintronics molecules and polymers. Here we present a density functional based theoretical study of the electronic structures of Cobalt-based valence tautomeric molecules Co III (SQ)(Cat)L Co II (SQ)2 L and their polymers, where SQ refers to the semiquinone ligand, and Cat the catecholate ligand, while L is a redox innocent backbone ligand. The conversion from low-spin Co III ground state to high-spin Co II excited state is realized by imposing an on-site potential U on the Co atom and elongating the Co-N bond. Transport properties are subsequently calculated by extracting electronic Wannier functions from these systems and computing the charge transport in the ballistic regime using a Non-Equilibrium Green's Function (NEGF) approach. Our transport results show distinct charge transport properties between low-spin ground state and high-spin excited state, hence suggesting potential spintronics devices from these molecules and polymers such as spin valves.

Note: design and development of improved indirectly heated cathode based strip electron gun.

PubMed

Maiti, Namita; Bade, Abhijeet; Tembhare, G U; Patil, D S; Dasgupta, K

2015-02-01

An improved design of indirectly heated solid cathode based electron gun (200 kW, 45 kV, 270° bent strip type electron gun) has been presented. The solid cathode is made of thoriated tungsten, which acts as an improved source of electron at lower temperature. So, high power operation is possible without affecting structural integrity of the electron gun. The design issues are addressed based on the uniformity of temperature on the solid cathode and the single long filament based design. The design approach consists of simulation followed by extensive experimentation. In the design, the effort has been put to tailor the non-uniformity of the heat flux from the filament to the solid cathode to obtain better uniformity of temperature on the solid cathode. Trial beam experiments have been carried out and it is seen that the modified design achieves one to one correspondence of the solid cathode length and the electron beam length.

Note: Design and development of improved indirectly heated cathode based strip electron gun

DOE Office of Scientific and Technical Information (OSTI.GOV)

Maiti, Namita; Patil, D. S.; Dasgupta, K.

An improved design of indirectly heated solid cathode based electron gun (200 kW, 45 kV, 270° bent strip type electron gun) has been presented. The solid cathode is made of thoriated tungsten, which acts as an improved source of electron at lower temperature. So, high power operation is possible without affecting structural integrity of the electron gun. The design issues are addressed based on the uniformity of temperature on the solid cathode and the single long filament based design. The design approach consists of simulation followed by extensive experimentation. In the design, the effort has been put to tailor themore » non-uniformity of the heat flux from the filament to the solid cathode to obtain better uniformity of temperature on the solid cathode. Trial beam experiments have been carried out and it is seen that the modified design achieves one to one correspondence of the solid cathode length and the electron beam length.« less

High accuracy electronic material level sensor

DOEpatents

McEwan, T.E.

1997-03-11

The High Accuracy Electronic Material Level Sensor (electronic dipstick) is a sensor based on time domain reflectometry (TDR) of very short electrical pulses. Pulses are propagated along a transmission line or guide wire that is partially immersed in the material being measured; a launcher plate is positioned at the beginning of the guide wire. Reflected pulses are produced at the material interface due to the change in dielectric constant. The time difference of the reflections at the launcher plate and at the material interface are used to determine the material level. Improved performance is obtained by the incorporation of: (1) a high accuracy time base that is referenced to a quartz crystal, (2) an ultrawideband directional sampler to allow operation without an interconnect cable between the electronics module and the guide wire, (3) constant fraction discriminators (CFDs) that allow accurate measurements regardless of material dielectric constants, and reduce or eliminate errors induced by triple-transit or ``ghost`` reflections on the interconnect cable. These improvements make the dipstick accurate to better than 0.1%. 4 figs.

High accuracy electronic material level sensor

DOEpatents

McEwan, Thomas E.

1997-01-01

The High Accuracy Electronic Material Level Sensor (electronic dipstick) is a sensor based on time domain reflectometry (TDR) of very short electrical pulses. Pulses are propagated along a transmission line or guide wire that is partially immersed in the material being measured; a launcher plate is positioned at the beginning of the guide wire. Reflected pulses are produced at the material interface due to the change in dielectric constant. The time difference of the reflections at the launcher plate and at the material interface are used to determine the material level. Improved performance is obtained by the incorporation of: 1) a high accuracy time base that is referenced to a quartz crystal, 2) an ultrawideband directional sampler to allow operation without an interconnect cable between the electronics module and the guide wire, 3) constant fraction discriminators (CFDs) that allow accurate measurements regardless of material dielectric constants, and reduce or eliminate errors induced by triple-transit or "ghost" reflections on the interconnect cable. These improvements make the dipstick accurate to better than 0.1%.

Giant collimated gamma-ray flashes

NASA Astrophysics Data System (ADS)

Benedetti, Alberto; Tamburini, Matteo; Keitel, Christoph H.

2018-06-01

Bright sources of high-energy electromagnetic radiation are widely employed in fundamental research, industry and medicine1,2. This motivated the construction of Compton-based facilities planned to yield bright gamma-ray pulses with energies up to3 20 MeV. Here, we demonstrate a novel mechanism based on the strongly amplified synchrotron emission that occurs when a sufficiently dense ultra-relativistic electron beam interacts with a millimetre-thickness conductor. For electron beam densities exceeding approximately 3 × 1019 cm-3, electromagnetic instabilities occur, and the ultra-relativistic electrons travel through self-generated electromagnetic fields as large as 107-108 gauss. This results in the production of a collimated gamma-ray pulse with peak brilliance above 1025 photons s-1 mrad-2 mm-2 per 0.1% bandwidth, photon energies ranging from 200 keV to gigaelectronvolts and up to 60% electron-to-photon energy conversion efficiency. These findings pave the way to compact, high-repetition-rate (kilohertz) sources of short (≲30 fs), collimated (milliradian) and high-flux (>1012 photons s-1) gamma-ray pulses.

Development of a high brightness ultrafast Transmission Electron Microscope based on a laser-driven cold field emission source.

PubMed

Houdellier, F; Caruso, G M; Weber, S; Kociak, M; Arbouet, A

2018-03-01

We report on the development of an ultrafast Transmission Electron Microscope based on a cold field emission source which can operate in either DC or ultrafast mode. Electron emission from a tungsten nanotip is triggered by femtosecond laser pulses which are tightly focused by optical components integrated inside a cold field emission source close to the cathode. The properties of the electron probe (brightness, angular current density, stability) are quantitatively determined. The measured brightness is the largest reported so far for UTEMs. Examples of imaging, diffraction and spectroscopy using ultrashort electron pulses are given. Finally, the potential of this instrument is illustrated by performing electron holography in the off-axis configuration using ultrashort electron pulses. Copyright © 2017 Elsevier B.V. All rights reserved.

Point-like neutron source based on high-current electron cyclotron resonance ion source with powerful millimeter wave plasma heating

NASA Astrophysics Data System (ADS)

Golubev, S. V.; Skalyga, V. A.; Izotov, I. V.; Sidorov, A. V.

2018-01-01

A possibility of an intense deuterium ion beam creation for a compact powerful point-like neutron source is discussed. The fusion takes place due to bombardment of deuterium (or tritium) loaded target by high-current focused deuterium ion beam with energy of 100 keV. The ways of high-current and low emittance ion beam formation from the plasma of quasi-gasdynamic ion source of a new generation based on an electron cyclotron resonance discharge in an open magnetic trap sustained by powerful microwave radiation are investigated.

Peel-and-Stick: Mechanism Study for Efficient Fabrication of Flexible/Transparent Thin-film Electronics

NASA Astrophysics Data System (ADS)

Lee, Chi Hwan; Kim, Jae-Han; Zou, Chenyu; Cho, In Sun; Weisse, Jeffery M.; Nemeth, William; Wang, Qi; van Duin, Adri C. T.; Kim, Taek-Soo; Zheng, Xiaolin

2013-10-01

Peel-and-stick process, or water-assisted transfer printing (WTP), represents an emerging process for transferring fully fabricated thin-film electronic devices with high yield and fidelity from a SiO2/Si wafer to various non-Si based substrates, including papers, plastics and polymers. This study illustrates that the fundamental working principle of the peel-and-stick process is based on the water-assisted subcritical debonding, for which water reduces the critical adhesion energy of metal-SiO2 interface by 70 ~ 80%, leading to clean and high quality transfer of thin-film electronic devices. Water-assisted subcritical debonding is applicable for a range of metal-SiO2 interfaces, enabling the peel-and-stick process as a general and tunable method for fabricating flexible/transparent thin-film electronic devices.

Peel-and-stick: mechanism study for efficient fabrication of flexible/transparent thin-film electronics.

PubMed

Lee, Chi Hwan; Kim, Jae-Han; Zou, Chenyu; Cho, In Sun; Weisse, Jeffery M; Nemeth, William; Wang, Qi; van Duin, Adri C T; Kim, Taek-Soo; Zheng, Xiaolin

2013-10-10

Peel-and-stick process, or water-assisted transfer printing (WTP), represents an emerging process for transferring fully fabricated thin-film electronic devices with high yield and fidelity from a SiO2/Si wafer to various non-Si based substrates, including papers, plastics and polymers. This study illustrates that the fundamental working principle of the peel-and-stick process is based on the water-assisted subcritical debonding, for which water reduces the critical adhesion energy of metal-SiO2 interface by 70 ~ 80%, leading to clean and high quality transfer of thin-film electronic devices. Water-assisted subcritical debonding is applicable for a range of metal-SiO2 interfaces, enabling the peel-and-stick process as a general and tunable method for fabricating flexible/transparent thin-film electronic devices.

Detection of an electron beam in a high density plasma via an electrostatic probe

NASA Astrophysics Data System (ADS)

Majeski, Stephen; Yoo, Jongsoo; Zweben, Stewart; Yamada, Masaaki

2018-07-01

An electron beam is detected by a 1D floating potential probe array in a relatively high density (1012–1013 cm‑3) and low temperature (∼5 eV) plasma of the Magnetic Reconnection Experiment. Clear perturbations in the floating potential profile by the electron beam are observed. Based on the floating potential profile and a current balance equation to the probe array tips, the effective width of the electron beam is determined, from which we determine the radial and toroidal beam current density profiles. After the profile of the electron beam is specified from the measured beam current, we demonstrate the consistency of the current balance equation and the location of the perturbation is also in agreement with field line mapping. No significant broadening of the electron beam is observed after the beam propagates for tens of centimeters through the high density plasma. These results prove that the field line mapping is, in principle, possible in high density plasmas.

Detection of an electron beam in a high density plasma via an electrostatic probe

DOE Office of Scientific and Technical Information (OSTI.GOV)

Majeski, Stephen; Yoo, Jongsoo; Zweben, Stewart

Here, an electron beam is detected by a 1D floating potential probe array in a relatively high density (10 12–10 13 cm -3) and low temperature (~5 eV) plasma of the Magnetic Reconnection Experiment. Clear perturbations in the floating potential profile by the electron beam are observed. Based on the floating potential profile and a current balance equation to the probe array tips, the effective width of the electron beam is determined, from which we determine the radial and toroidal beam current density profiles. After the profile of the electron beam is specified from the measured beam current, we demonstratemore » the consistency of the current balance equation and the location of the perturbation is also in agreement with field line mapping. No significant broadening of the electron beam is observed after the beam propagates for tens of centimeters through the high density plasma. These results prove that the field line mapping is, in principle, possible in high density plasmas.« less

Detection of an electron beam in a high density plasma via an electrostatic probe

DOE PAGES

Majeski, Stephen; Yoo, Jongsoo; Zweben, Stewart; ...

2018-05-08

Here, an electron beam is detected by a 1D floating potential probe array in a relatively high density (10 12–10 13 cm -3) and low temperature (~5 eV) plasma of the Magnetic Reconnection Experiment. Clear perturbations in the floating potential profile by the electron beam are observed. Based on the floating potential profile and a current balance equation to the probe array tips, the effective width of the electron beam is determined, from which we determine the radial and toroidal beam current density profiles. After the profile of the electron beam is specified from the measured beam current, we demonstratemore » the consistency of the current balance equation and the location of the perturbation is also in agreement with field line mapping. No significant broadening of the electron beam is observed after the beam propagates for tens of centimeters through the high density plasma. These results prove that the field line mapping is, in principle, possible in high density plasmas.« less

An Electron-Deficient Building Block Based on the B←N Unit: An Electron Acceptor for All-Polymer Solar Cells.

PubMed

Dou, Chuandong; Long, Xiaojing; Ding, Zicheng; Xie, Zhiyuan; Liu, Jun; Wang, Lixiang

2016-01-22

A double B←N bridged bipyridyl (BNBP) is a novel electron-deficient building block for polymer electron acceptors in all-polymer solar cells. The B←N bridging units endow BNBP with fixed planar configuration and low-lying LUMO/HOMO energy levels. As a result, the polymer based on BNBP units (P-BNBP-T) exhibits high electron mobility, low-lying LUMO/HOMO energy levels, and strong absorbance in the visible region, which is desirable for polymer electron acceptors. Preliminary all-polymer solar cell (all-PSC) devices with P-BNBP-T as the electron acceptor and PTB7 as the electron donor exhibit a power conversion efficiency (PCE) of 3.38%, which is among the highest values of all-PSCs with PTB7 as the electron donor. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Graphene-MoS2 Heterojunctions for High-Speed Opto-electronics

NASA Astrophysics Data System (ADS)

Horng, Jason; Wang, Alex; Wang, Danqing; Li, Alexander Shengzhi; Wang, Feng

Heterostructures consisting of two-dimensional materials has drawn significant attention in different research fields owning to their novel electronic states and potential applications. Transmitting information with transition metal dichalcogenides(TMDC) electro-optical modulator switch interconnect is of great interest for technological applications. However, their high-speed applications have been slowed by their intrinsically high resistivity as well as the difficulties in making optimized metal contacts. Here, we present a new strategy by using graphene as a tunable contact to two-dimensional semiconductors to explore possible applications in high-speed opto-electronics. We will present an optical study to provide better understanding of band alignment in graphene/MoS2 heterostructures and a demonstration of high-speed opto-electronics based on these heterostructures. The result shows the new scheme could have potential in both opto-modulators and optical sensing applications.

Silicon carbide, an emerging high temperature semiconductor

NASA Technical Reports Server (NTRS)

Matus, Lawrence G.; Powell, J. Anthony

1991-01-01

In recent years, the aerospace propulsion and space power communities have expressed a growing need for electronic devices that are capable of sustained high temperature operation. Applications for high temperature electronic devices include development instrumentation within engines, engine control, and condition monitoring systems, and power conditioning and control systems for space platforms and satellites. Other earth-based applications include deep-well drilling instrumentation, nuclear reactor instrumentation and control, and automotive sensors. To meet the needs of these applications, the High Temperature Electronics Program at the Lewis Research Center is developing silicon carbide (SiC) as a high temperature semiconductor material. Research is focussed on developing the crystal growth, characterization, and device fabrication technologies necessary to produce a family of silicon carbide electronic devices and integrated sensors. The progress made in developing silicon carbide is presented, and the challenges that lie ahead are discussed.

Mechanical flip-chip for ultra-high electron mobility devices

DOE PAGES

Bennaceur, Keyan; Schmidt, Benjamin A.; Gaucher, Samuel; ...

2015-09-22

In this study, electrostatic gates are of paramount importance for the physics of devices based on high-mobility two-dimensional electron gas (2DEG) since they allow depletion of electrons in selected areas. This field-effect gating enables the fabrication of a wide range of devices such as, for example, quantum point contacts (QPC), electron interferometers and quantum dots. To fabricate these gates, processing is usually performed on the 2DEG material, which is in many cases detrimental to its electron mobility. Here we propose an alternative process which does not require any processing of the 2DEG material other than for the ohmic contacts. Thismore » approach relies on processing a separate wafer that is then mechanically mounted on the 2DEG material in a flip-chip fashion. This technique proved successful to fabricate quantum point contacts on both GaAs/AlGaAs materials with both moderate and ultra-high electron mobility.« less

Graphene-based terahertz photodetector by noise thermometry technique

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Ming-Jye, E-mail: mingjye@asiss.sinica.edu.tw; Institute of Physics, Academia Sinica, Taipei 11529, Taiwan; Wang, Ji-Wun

2014-01-20

We report the characteristics of graphene-based terahertz (THz) photodetector based on noise thermometry technique by measuring its noise power at frequency from 4 to 6 GHz. Hot electron system in graphene microbridge is generated after THz photon pumping and creates extra noise power. The equivalent noise temperature and electron temperature increase rapidly in low THz pumping regime and saturate gradually in high THz power regime which is attributed to a faster energy relaxation process involved by stronger electron-phonon interaction. Based on this detector, a conversion efficiency around 0.15 from THz power to noise power in 4–6 GHz span has been achieved.

Superconductivity in electron-doped arsenene

NASA Astrophysics Data System (ADS)

Kong, Xin; Gao, Miao; Yan, Xun-Wang; Lu, Zhong-Yi; Xiang, Tao

2018-04-01

Based on the first-principles density functional theory electronic structure calculation, we investigate the possible phonon-mediated superconductivity in arsenene, a two-dimensional buckled arsenic atomic sheet, under electron doping. We find that the strong superconducting pairing interaction results mainly from the $p_z$-like electrons of arsenic atoms and the $A_1$ phonon mode around the $K$ point, and the superconducting transition temperature can be as high as 30.8 K in the arsenene with 0.2 doped electrons per unit cell and 12\\% applied biaxial tensile strain. This transition temperature is about ten times higher than that in the bulk arsenic under high pressure. It is also the highest transition temperature that is predicted for electron-doped two-dimensional elemental superconductors, including graphene, silicene, phosphorene, and borophene.

Experimental Analysis of Pseudospark Sourced Electron Beam

NASA Astrophysics Data System (ADS)

Kumar, Niraj; Pal, U. N.; Verma, D. K.; Prajapati, J.; Kumar, M.; Meena, B. L.; Tyagi, M. S.; Srivastava, V.

2011-12-01

The pseudospark (PS) discharge has been shown to be a promising source of high brightness, high intensity electron beam pulses. The PS discharge sourced electron beam has potential applications in plasma filled microwave sources where normal material cathode cannot be used. Analysis of the electron beam profile has been done experimentally for different applied voltages. The investigation has been carried out at different axial and radial location inside the drift space in argon atmosphere. This paper represents experimentally found axial and radial variation of the beam current inside the drift tube of PS discharge based plasma cathode electron (PCE) gun. With the help of current density estimation the focusing and defocusing point of electron beam in axial direction can be analyzed.

Value-based management of design reuse

NASA Astrophysics Data System (ADS)

Carballo, Juan Antonio; Cohn, David L.; Belluomini, Wendy; Montoye, Robert K.

2003-06-01

Effective design reuse in electronic products has the potential to provide very large cost savings, substantial time-to-market reduction, and extra sources of revenue. Unfortunately, critical reuse opportunities are often missed because, although they provide clear value to the corporation, they may not benefit the business performance of an internal organization. It is therefore crucial to provide tools to help reuse partners participate in a reuse transaction when the transaction provides value to the corporation as a whole. Value-based Reuse Management (VRM) addresses this challenge by (a) ensuring that all parties can quickly assess the business performance impact of a reuse opportunity, and (b) encouraging high-value reuse opportunities by supplying value-based rewards to potential parties. In this paper we introduce the Value-Based Reuse Management approach and we describe key results on electronic designs that demonstrate its advantages. Our results indicate that Value-Based Reuse Management has the potential to significantly increase the success probability of high-value electronic design reuse.

An automatic chip structure optical inspection system for electronic components

NASA Astrophysics Data System (ADS)

Song, Zhichao; Xue, Bindang; Liang, Jiyuan; Wang, Ke; Chen, Junzhang; Liu, Yunhe

2018-01-01

An automatic chip structure inspection system based on machine vision is presented to ensure the reliability of electronic components. It consists of four major modules, including a metallographic microscope, a Gigabit Ethernet high-resolution camera, a control system and a high performance computer. An auto-focusing technique is presented to solve the problem that the chip surface is not on the same focusing surface under the high magnification of the microscope. A panoramic high-resolution image stitching algorithm is adopted to deal with the contradiction between resolution and field of view, caused by different sizes of electronic components. In addition, we establish a database to storage and callback appropriate parameters to ensure the consistency of chip images of electronic components with the same model. We use image change detection technology to realize the detection of chip images of electronic components. The system can achieve high-resolution imaging for chips of electronic components with various sizes, and clearly imaging for the surface of chip with different horizontal and standardized imaging for ones with the same model, and can recognize chip defects.

Dark-field imaging based on post-processed electron backscatter diffraction patterns of bulk crystalline materials in a scanning electron microscope.

PubMed

Brodusch, Nicolas; Demers, Hendrix; Gauvin, Raynald

2015-01-01

Dark-field (DF) images were acquired in the scanning electron microscope with an offline procedure based on electron backscatter diffraction (EBSD) patterns (EBSPs). These EBSD-DF images were generated by selecting a particular reflection on the electron backscatter diffraction pattern and by reporting the intensity of one or several pixels around this point at each pixel of the EBSD-DF image. Unlike previous studies, the diffraction information of the sample is the basis of the final image contrast with a pixel scale resolution at the EBSP providing DF imaging in the scanning electron microscope. The offline facility of this technique permits the selection of any diffraction condition available in the diffraction pattern and displaying the corresponding image. The high number of diffraction-based images available allows a better monitoring of deformation structures compared to electron channeling contrast imaging (ECCI) which is generally limited to a few images of the same area. This technique was applied to steel and iron specimens and showed its high capability in describing more rigorously the deformation structures around micro-hardness indents. Due to the offline relation between the reference EBSP and the EBSD-DF images, this new technique will undoubtedly greatly improve our knowledge of deformation mechanism and help to improve our understanding of the ECCI contrast mechanisms. Copyright © 2014 Elsevier B.V. All rights reserved.

Indium antimonide quantum well structures for electronic device applications

NASA Astrophysics Data System (ADS)

Edirisooriya, Madhavie

The electron effective mass is smaller in InSb than in any other III-V semiconductor. Since the electron mobility depends inversely on the effective mass, InSb-based devices are attractive for field effect transistors, magnetic field sensors, ballistic transport devices, and other applications where the performance depends on a high mobility or a long mean free path. In addition, electrons in InSb have a large g-factor and strong spin orbit coupling, which makes them well suited for certain spin transport devices. The first n-channel InSb high electron mobility transistor (HEMT) was produced in 2005 with a power-delay product superior to HEMTs with a channel made from any other III-V semiconductor. The high electron mobility in the InSb quantum-well channel increases the switching speed and lowers the required supply voltage. This dissertation focuses on several materials challenges that can further increase the appeal of InSb quantum wells for transistors and other electronic device applications. First, the electron mobility in InSb quantum wells, which is the highest for any semiconductor quantum well, can be further increased by reducing scattering by crystal defects. InSb-based heteroepitaxy is usually performed on semi-insulating GaAs (001) substrates due to the lack of a lattice matched semi-insulating substrate. The 14.6% mismatch between the lattice parameters of GaAs and InSb results in the formation of structural defects such as threading dislocations and microtwins which degrade the electrical and optical properties of InSb-based devices. Chapter 1 reviews the methods and procedures for growing InSb-based heterostructures by molecular beam epitaxy. Chapters 2 and 3 introduce techniques for minimizing the crystalline defects in InSb-based structures grown on GaAs substrates. Chapter 2 discusses a method of reducing threading dislocations by incorporating AlyIn1-ySb interlayers in an AlxIn1-xSb buffer layer and the reduction of microtwin defects by growth on GaAs substrates that are oriented 2° away from the [011] direction. Chapter 3 discusses designing InSb QW layer structures that are strain balanced. By applying these defect-reducing techniques, the electron mobility in InSb quantum wells at room temperature was significantly increased. For complementary logic technology, p-channel transistors with high mobility are equally as important as n-channel transistors. However, achieving a high hole mobility in III-V semiconductors is challenging. A controlled introduction of strain in the quantum-well material is an effective technique for enhancing the hole mobility beyond its value in bulk material. The strain reduces the hole effective mass by splitting the heavy hole and light hole valence bands. Chapter 4 discusses a successful attempt to realize p-type InSb quantum well structures. The biaxial strain applied via a relaxed metamorphic buffer resulted in a significantly higher room-temperature hole mobility and a record high low-temperature hole mobility. To demonstrate the usefulness of high mobility in a device structure, magnetoresistive devices were fabricated from remotely doped InSb QWs. Such devices have numerous practical applications such as position and speed sensors and as read heads in magnetic storage systems. In a magnetoresistive device composed of a series of shorted Hall bars, the magnetoresistance is proportional to the electron mobility squared for small magnetic fields. Hence, the high electron mobility in InSb QWs makes them highly preferable for geometrical magnetoresistors. Chapter 5 reports the fabrication and characterization of InSb quantum-well magnetoresistors. The excellent transport properties of the InSb QWs resulted in high room-temperature sensitivity to applied magnetic fields. Finally, Chapter 6 provides the conclusions obtained during this research effort, and makes suggestions for future work.

Advanced High Energy Density Secondary Batteries with Multi‐Electron Reaction Materials

PubMed Central

Luo, Rui; Huang, Yongxin; Li, Li

2016-01-01

Secondary batteries have become important for smart grid and electric vehicle applications, and massive effort has been dedicated to optimizing the current generation and improving their energy density. Multi‐electron chemistry has paved a new path for the breaking of the barriers that exist in traditional battery research and applications, and provided new ideas for developing new battery systems that meet energy density requirements. An in‐depth understanding of multi‐electron chemistries in terms of the charge transfer mechanisms occuring during their electrochemical processes is necessary and urgent for the modification of secondary battery materials and development of secondary battery systems. In this Review, multi‐electron chemistry for high energy density electrode materials and the corresponding secondary battery systems are discussed. Specifically, four battery systems based on multi‐electron reactions are classified in this review: lithium‐ and sodium‐ion batteries based on monovalent cations; rechargeable batteries based on the insertion of polyvalent cations beyond those of alkali metals; metal–air batteries, and Li–S batteries. It is noted that challenges still exist in the development of multi‐electron chemistries that must be overcome to meet the energy density requirements of different battery systems, and much effort has more effort to be devoted to this. PMID:27840796

Electron fractography used to examine nickel-base alloys

NASA Technical Reports Server (NTRS)

Jewett, R. P.

1970-01-01

Electron fractography establishes causes of metal fatigue and stress failures. Technique produces surface features at magnification as high as 9000X with excellent resolution. Method permits observation of features with dimensions of only 50 angstroms.

Hole and electron extraction layers based on graphene oxide derivatives for high-performance bulk heterojunction solar cells.

PubMed

Liu, Jun; Xue, Yuhua; Gao, Yunxiang; Yu, Dingshan; Durstock, Michael; Dai, Liming

2012-05-02

By charge neutralization of carboxylic acid groups in graphene oxide (GO) with Cs(2)CO(3) to afford Cesium-neutralized GO (GO-Cs), GO derivatives with appropriate modification are used as both hole- and electron-extraction layers for bulk heterojunction (BHJ) solar cells. The normal and inverted devices based on GO hole- and GO-Cs electron-extraction layers both outperform the corresponding standard BHJ solar cells. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Radiation Hardened Electronics for Space Environments (RHESE)

NASA Technical Reports Server (NTRS)

Keys, Andrew S.; Adams, James H.; Frazier, Donald O.; Patrick, Marshall C.; Watson, Michael D.; Johnson, Michael A.; Cressler, John D.; Kolawa, Elizabeth A.

2007-01-01

Radiation Environmental Modeling is crucial to proper predictive modeling and electronic response to the radiation environment. When compared to on-orbit data, CREME96 has been shown to be inaccurate in predicting the radiation environment. The NEDD bases much of its radiation environment data on CREME96 output. Close coordination and partnership with DoD radiation-hardened efforts will result in leveraged - not duplicated or independently developed - technology capabilities of: a) Radiation-hardened, reconfigurable FPGA-based electronics; and b) High Performance Processors (NOT duplication or independent development).

Highly sensitive wearable strain sensor based on silver nanowires and nanoparticles.

PubMed

Shengbo, Sang; Lihua, Liu; Aoqun, Jian; Qianqian, Duan; Jianlong, Ji; Qiang, Zhang; Wendong, Zhang

2018-06-22

Here, we propose a highly sensitive and stretchable strain sensor based on silver nanoparticles and nanowires (Ag NPs and NWs), advancing the rapid development of electronic skin. To improve the sensitivity of strain sensors based on silver nanowires (Ag NWs), Ag NPs and NWs were added to polydimethylsiloxane (PDMS) as an aid filler. Silver nanoparticles (Ag NPs) increase the conductive paths for electrons, leading to the low resistance of the resulting sensor (14.9 Ω). The strain sensor based on Ag NPs and NWs showed strong piezoresistivity with a tunable gauge factor (GF) at 3766, and a change in resistance as the strain linearly increased from 0% to 28.1%. The high GF demonstrates the irreplaceable role of Ag NPs in the sensor. Moreover, the applicability of our high-performance strain sensor has been demonstrated by its ability to sense movements caused by human talking, finger bending, wrist raising and walking.

High speed FPGA-based Phasemeter for the far-infrared laser interferometers on EAST

NASA Astrophysics Data System (ADS)

Yao, Y.; Liu, H.; Zou, Z.; Li, W.; Lian, H.; Jie, Y.

2017-12-01

The far-infrared laser-based HCN interferometer and POlarimeter/INTerferometer\\break (POINT) system are important diagnostics for plasma density measurement on EAST tokamak. Both HCN and POINT provide high spatial and temporal resolution of electron density measurement and used for plasma density feedback control. The density is calculated by measuring the real-time phase difference between the reference beams and the probe beams. For long-pulse operations on EAST, the calculation of density has to meet the requirements of Real-Time and high precision. In this paper, a Phasemeter for far-infrared laser-based interferometers will be introduced. The FPGA-based Phasemeter leverages fast ADCs to obtain the three-frequency signals from VDI planar-diode Mixers, and realizes digital filters and an FFT algorithm in FPGA to provide real-time, high precision electron density output. Implementation of the Phasemeter will be helpful for the future plasma real-time feedback control in long-pulse discharge.

Highly sensitive wearable strain sensor based on silver nanowires and nanoparticles

NASA Astrophysics Data System (ADS)

Shengbo, Sang; Lihua, Liu; Aoqun, Jian; Qianqian, Duan; Jianlong, Ji; Qiang, Zhang; Wendong, Zhang

2018-06-01

Here, we propose a highly sensitive and stretchable strain sensor based on silver nanoparticles and nanowires (Ag NPs and NWs), advancing the rapid development of electronic skin. To improve the sensitivity of strain sensors based on silver nanowires (Ag NWs), Ag NPs and NWs were added to polydimethylsiloxane (PDMS) as an aid filler. Silver nanoparticles (Ag NPs) increase the conductive paths for electrons, leading to the low resistance of the resulting sensor (14.9 Ω). The strain sensor based on Ag NPs and NWs showed strong piezoresistivity with a tunable gauge factor (GF) at 3766, and a change in resistance as the strain linearly increased from 0% to 28.1%. The high GF demonstrates the irreplaceable role of Ag NPs in the sensor. Moreover, the applicability of our high-performance strain sensor has been demonstrated by its ability to sense movements caused by human talking, finger bending, wrist raising and walking.

Strength design of Zr(x)Ti(x)Hf(x)Nb(x)Mo(x) alloys based on empirical electron theory of solids and molecules

NASA Astrophysics Data System (ADS)

Li, Y. K.; Chen, Y. W.; Cheng, X. W.; Wu, C.; Cheng, B.

2018-05-01

In this paper, the valence electron structure parameters of Zr(x)Ti(x)Hf(x)Nb(x)Mo(x) alloys were calculated based on the empirical electron theory of solids and molecules (EET), and their performance through these parameters were predicted. Subsequently, the alloys with special valence electron structure parameters were prepared byarc melting. The hardness and high-temperature mechanical properties were analyzed to verify the prediction. Research shows that the influence of shared electron number nA on the strongest bond determines the strength of these alloys and the experiments are consistent with the theoretical prediction.

Electronics Devices and Materials

DTIC Science & Technology

2008-03-17

Molecular -bea epitaxy MCNPX ............... Software code Misse6 ................. Satellite expected to carry ORMatE-I Misse7...patterning using electron beam lithography), spaces (class 1000 clean benches), and skills (appropriate mix of skilled technicians and professionals...34 Process samples for various projects such as Antimode Base High Electron Mobility Transistors ( HEMT ) and Double Heterojuction Bipolar Transistors

Highly parallel implementation of non-adiabatic Ehrenfest molecular dynamics

NASA Astrophysics Data System (ADS)

Kanai, Yosuke; Schleife, Andre; Draeger, Erik; Anisimov, Victor; Correa, Alfredo

2014-03-01

While the adiabatic Born-Oppenheimer approximation tremendously lowers computational effort, many questions in modern physics, chemistry, and materials science require an explicit description of coupled non-adiabatic electron-ion dynamics. Electronic stopping, i.e. the energy transfer of a fast projectile atom to the electronic system of the target material, is a notorious example. We recently implemented real-time time-dependent density functional theory based on the plane-wave pseudopotential formalism in the Qbox/qb@ll codes. We demonstrate that explicit integration using a fourth-order Runge-Kutta scheme is very suitable for modern highly parallelized supercomputers. Applying the new implementation to systems with hundreds of atoms and thousands of electrons, we achieved excellent performance and scalability on a large number of nodes both on the BlueGene based ``Sequoia'' system at LLNL as well as the Cray architecture of ``Blue Waters'' at NCSA. As an example, we discuss our work on computing the electronic stopping power of aluminum and gold for hydrogen projectiles, showing an excellent agreement with experiment. These first-principles calculations allow us to gain important insight into the the fundamental physics of electronic stopping.

Programmable Hydrogel Ionic Circuits for Biologically Matched Electronic Interfaces.

PubMed

Zhao, Siwei; Tseng, Peter; Grasman, Jonathan; Wang, Yu; Li, Wenyi; Napier, Bradley; Yavuz, Burcin; Chen, Ying; Howell, Laurel; Rincon, Javier; Omenetto, Fiorenzo G; Kaplan, David L

2018-06-01

The increased need for wearable and implantable medical devices has driven the demand for electronics that interface with living systems. Current bioelectronic systems have not fully resolved mismatches between engineered circuits and biological systems, including the resulting pain and damage to biological tissues. Here, salt/poly(ethylene glycol) (PEG) aqueous two-phase systems are utilized to generate programmable hydrogel ionic circuits. High-conductivity salt-solution patterns are stably encapsulated within PEG hydrogel matrices using salt/PEG phase separation, which route ionic current with high resolution and enable localized delivery of electrical stimulation. This strategy allows designer electronics that match biological systems, including transparency, stretchability, complete aqueous-based connective interface, distribution of ionic electrical signals between engineered and biological systems, and avoidance of tissue damage from electrical stimulation. The potential of such systems is demonstrated by generating light-emitting diode (LED)-based displays, skin-mounted electronics, and stimulators that deliver localized current to in vitro neuron cultures and muscles in vivo with reduced adverse effects. Such electronic platforms may form the basis of future biointegrated electronic systems. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Wide Bandgap Semiconductor Nanowires for Electronic, Photonic and Sensing Devices

DTIC Science & Technology

2012-01-05

oxide -based thin film transistors ( TFTs ) have attracted much attention for applications like flexible electronic devices. The...crystals, and ~ 1.5 cm2.V-1.s-1 for pentacene thin films ). A number of groups have demonstrated TFTs based on α- oxide semiconductors such as zinc oxide ...show excellent long-term stability at room temperature. Results: High-performance amorphous (α-) InGaZnO-based thin film transistors ( TFTs )

Prediction Model for Relativistic Electrons at Geostationary Orbit

NASA Technical Reports Server (NTRS)

Khazanov, George V.; Lyatsky, Wladislaw

2008-01-01

We developed a new prediction model for forecasting relativistic (greater than 2MeV) electrons, which provides a VERY HIGH correlation between predicted and actually measured electron fluxes at geostationary orbit. This model implies the multi-step particle acceleration and is based on numerical integrating two linked continuity equations for primarily accelerated particles and relativistic electrons. The model includes a source and losses, and used solar wind data as only input parameters. We used the coupling function which is a best-fit combination of solar wind/interplanetary magnetic field parameters, responsible for the generation of geomagnetic activity, as a source. The loss function was derived from experimental data. We tested the model for four year period 2004-2007. The correlation coefficient between predicted and actual values of the electron fluxes for whole four year period as well as for each of these years is stable and incredibly high (about 0.9). The high and stable correlation between the computed and actual electron fluxes shows that the reliable forecasting these electrons at geostationary orbit is possible.

Relativistic Electrons at Geostationary Orbit: Modeling Results

NASA Technical Reports Server (NTRS)

Khazanov, George V.; Lyatsky, Wladislaw

2008-01-01

We developed a new prediction model for forecasting relativistic (greater than 2MeV) electrons, which provides a VERY HIGH correlation between predicted and actually measured electron fluxes at geostationary orbit. This model implies the multi-step particle acceleration and is based on numerical integrating two linked continuity equations for primarily accelerated particles and relativistic electrons. The model includes a source and losses, and used solar wind data as only input parameters. We used the coupling function which is a best-fit combination of solar wind/interplanetary magnetic field parameters, responsible for the generation of geomagnetic activity, as a source. The loss function was derived from experimental data. We tested the model for four year period 2004-2007. The correlation coefficient between predicted and actual values of the electron fluxes for whole four year period as well as for each of these years is stable and incredibly high (about 0.9). The high and stable correlation between the computed and actual electron fluxes shows that the reliable forecasting these electrons at geostationary orbit is possible.

Electro-Thermo-Mechanical Transient Modeling of Stress Development in AlGaN/GaN High Electron Mobility Transistors (HEMTs) (Postprint)

DTIC Science & Technology

2014-02-01

Applied Drain Voltage Ids Drain-to-Source current MPa Megapascals σxx x-Component of Stress INTRODUCTION Gallium nitride (GaN) based high electron...the thermodynamic model to obtain the current densities within a semiconductor device. In doing so, it is possible to determine the electric

Novel molecular host materials based on carbazole/PO hybrids with wide bandgap via unique linkages for solution-processed blue phosphorescent OLEDs

NASA Astrophysics Data System (ADS)

Ye, Hua; Zhou, Kaifeng; Wu, Hongyu; Chen, Kai; Xie, Gaozhan; Hu, Jingang; Yan, Guobing; Ma, Songhua; Su, Shi-Jian; Cao, Yong

2016-10-01

A series of novel molecules with wide bandgap based on electron-withdrawing diphenyl phosphine oxide units and electron-donating carbazolyl moieties through insulated unique linkages of flexible chains terminated by oxygen or sulfur atoms as solution-processable host materials were successfully synthesized for the first time, and their thermal, photophysical, and electrochemical properties were studied thoroughly. These materials possess high triplet energy levels (ET, 2.76-2.77 eV) due to the introduction of alkyl chain to interrupt the conjugation between electron-donor and electron-acceptor. Such high ET could effectively curb the energy from phosphorescent emitter transfer to the host molecules and thus assuring the emission of devices was all from the blue phosphorescent emitter iridium (III) bis [(4,6-difluorophenyl)-pyridinate-N,C2‧]picolinate (FIrpic). Among them, the solution-processed device based on CBCR6OPO without extra vacuum thermal-deposited hole-blocking layer and electron-transporting layer showed the highest maximum current efficiency (CEmax) of 4.16 cd/A. Moreover, the device presented small efficiency roll-off with current efficiency (CE) of 4.05 cd/A at high brightness up to 100 cd/m2. Our work suggests the potential applications of the solution-processable materials with wide bandgap in full-color flat-panel displays and organic lighting.

Readout electronics for CBM-TOF super module quality evaluation based on 10 Gbps ethernet

NASA Astrophysics Data System (ADS)

Jiang, D.; Cao, P.; Huang, X.; Zheng, J.; Wang, Q.; Li, B.; Li, J.; Liu, S.; An, Q.

2017-07-01

The Compressed Baryonic Matter-Time of Flight (CBM-TOF) wall uses high performance of Multi-gap Resistive Plate Chambers (MRPC) assembled in super modules to identify charged particles with high channel density and high measurement precision at high event rate. Electronics meet the challenge for reading data out from a super module at high speed of about 6 Gbps in real time. In this paper, the readout electronics for CBM-TOF super module quality evaluation is proposed based on 10 Gigabit Ethernet. The digitized TOF data from one super module will be concentrated at the front-end electronics residing on the side of the super module and transmitted to an extreme speed readout module (XSRM) housed in the backend crate through the PCI Express (PCIe) protocol via optic channels. Eventually, the XSRM transmits data to the data acquisition (DAQ) system through four 10 Gbps Ethernet ports in real time. This readout structure has advantages of high performance and expansibility. Furthermore, it is easy to operate. Test results on the prototype show that the overall data readout performance for each XSRM can reach up to 28.8 Gbps, which means XSRM can meet the requirement of reading data out from 4 super modules with 1280 channels in real time.

Review of GaN-based devices for terahertz operation

NASA Astrophysics Data System (ADS)

Ahi, Kiarash

2017-09-01

GaN provides the highest electron saturation velocity, breakdown voltage, operation temperature, and thus the highest combined frequency-power performance among commonly used semiconductors. The industrial need for compact, economical, high-resolution, and high-power terahertz (THz) imaging and spectroscopy systems are promoting the utilization of GaN for implementing the next generation of THz systems. As it is reviewed, the mentioned characteristics of GaN together with its capabilities of providing high two-dimensional election densities and large longitudinal optical phonon of ˜90 meV make it one of the most promising semiconductor materials for the future of the THz emitters, detectors, mixers, and frequency multiplicators. GaN-based devices have shown capabilities of operation in the upper THz frequency band of 5 to 12 THz with relatively high photon densities in room temperature. As a result, THz imaging and spectroscopy systems with high resolution and deep depth of penetration can be realized through utilizing GaN-based devices. A comprehensive review of the history and the state of the art of GaN-based electronic devices, including plasma heterostructure field-effect transistors, negative differential resistances, hetero-dimensional Schottky diodes, impact avalanche transit times, quantum-cascade lasers, high electron mobility transistors, Gunn diodes, and tera field-effect transistors together with their impact on the future of THz imaging and spectroscopy systems is provided.

Nanoparticle discrimination based on wavelength and lifetime-multiplexed cathodoluminescence microscopy.

PubMed

Garming, Mathijs W H; Weppelman, I Gerward C; de Boer, Pascal; Martínez, Felipe Perona; Schirhagl, Romana; Hoogenboom, Jacob P; Moerland, Robert J

2017-08-31

Nanomaterials can be identified in high-resolution electron microscopy images using spectrally-selective cathodoluminescence. Capabilities for multiplex detection can however be limited, e.g., due to spectral overlap or availability of filters. Also, the available photon flux may be limited due to degradation under electron irradiation. Here, we demonstrate single-pass cathodoluminescence-lifetime based discrimination of different nanoparticles, using a pulsed electron beam. We also show that cathodoluminescence lifetime is a robust parameter even when the nanoparticle cathodoluminescence intensity decays over an order of magnitude. We create lifetime maps, where the lifetime of the cathodoluminescence emission is correlated with the emission intensity and secondary-electron images. The consistency of lifetime-based discrimination is verified by also correlating the emission wavelength and the lifetime of nanoparticles. Our results show how cathodoluminescence lifetime provides an additional channel of information in electron microscopy.

High energy dispersion relations for the high temperature Bi2Sr2CaCu2O8 superconductor from laser-based angle-resolved photoemission spectroscopy.

PubMed

Zhang, Wentao; Liu, Guodong; Meng, Jianqiao; Zhao, Lin; Liu, Haiyun; Dong, Xiaoli; Lu, Wei; Wen, J S; Xu, Z J; Gu, G D; Sasagawa, T; Wang, Guiling; Zhu, Yong; Zhang, Hongbo; Zhou, Yong; Wang, Xiaoyang; Zhao, Zhongxian; Chen, Chuangtian; Xu, Zuyan; Zhou, X J

2008-07-04

Laser-based angle-resolved photoemission spectroscopy measurements have been carried out on the high energy electron dynamics in Bi2Sr2CaCu2O8 high temperature superconductor. Our superhigh resolution data, momentum-dependent measurements, and complete analysis provide important information to judge the nature of the high energy dispersion and kink. Our results rule out the possibility that the high energy dispersion from the momentum distribution curve (MDC) may represent the true bare band as believed in previous studies. We also rule out the possibility that the high energy kink represents electron coupling with some high energy modes as proposed before. Through detailed MDC and energy distribution curve analyses, we propose that the high energy MDC dispersion may not represent intrinsic band structure.

The effect of electronic health record software design on resident documentation and compliance with evidence-based medicine.

PubMed

Rodriguez Torres, Yasaira; Huang, Jordan; Mihlstin, Melanie; Juzych, Mark S; Kromrei, Heidi; Hwang, Frank S

2017-01-01

This study aimed to determine the role of electronic health record software in resident education by evaluating documentation of 30 elements extracted from the American Academy of Ophthalmology Dry Eye Syndrome Preferred Practice Pattern. The Kresge Eye Institute transitioned to using electronic health record software in June 2013. We evaluated the charts of 331 patients examined in the resident ophthalmology clinic between September 1, 2011, and March 31, 2014, for an initial evaluation for dry eye syndrome. We compared documentation rates for the 30 evidence-based elements between electronic health record chart note templates among the ophthalmology residents. Overall, significant changes in documentation occurred when transitioning to a new version of the electronic health record software with average compliance ranging from 67.4% to 73.6% (p < 0.0005). Electronic Health Record A had high compliance (>90%) in 13 elements while Electronic Health Record B had high compliance (>90%) in 11 elements. The presence of dialog boxes was responsible for significant changes in documentation of adnexa, puncta, proptosis, skin examination, contact lens wear, and smoking exposure. Significant differences in documentation were correlated with electronic health record template design rather than individual resident or residents' year in training. Our results show that electronic health record template design influences documentation across all resident years. Decreased documentation likely results from "mouse click fatigue" as residents had to access multiple dialog boxes to complete documentation. These findings highlight the importance of EHR template design to improve resident documentation and integration of evidence-based medicine into their clinical notes.

Dynamics of electronic transitions and frequency dependence of negative capacitance in semiconductor diodes under high forward bias

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bansal, Kanika; Datta, Shouvik; Henini, Mohamed

2014-09-22

We observed qualitatively dissimilar frequency dependence of negative capacitance under high charge injection in two sets of functionally different junction diodes: III-V based light emitting and Si-based non-light emitting diodes. Using an advanced approach based on bias activated differential capacitance, we developed a generalized understanding of negative capacitance phenomenon which can be extended to any diode based device structure. We explained the observations as the mutual competition of fast and slow electronic transition rates which are different in different devices. This study can be useful in understanding the interfacial effects in semiconductor heterostructures and may lead to superior device functionality.

Recent progress in high-mobility thin-film transistors based on multilayer 2D materials

NASA Astrophysics Data System (ADS)

Hong, Young Ki; Liu, Na; Yin, Demin; Hong, Seongin; Kim, Dong Hak; Kim, Sunkook; Choi, Woong; Yoon, Youngki

2017-04-01

Two-dimensional (2D) layered semiconductors are emerging as promising candidates for next-generation thin-film electronics because of their high mobility, relatively large bandgap, low-power switching, and the availability of large-area growth methods. Thin-film transistors (TFTs) based on multilayer transition metal dichalcogenides or black phosphorus offer unique opportunities for next-generation electronic and optoelectronic devices. Here, we review recent progress in high-mobility transistors based on multilayer 2D semiconductors. We describe the theoretical background on characterizing methods of TFT performance and material properties, followed by their applications in flexible, transparent, and optoelectronic devices. Finally, we highlight some of the methods used in metal-semiconductor contacts, hybrid structures, heterostructures, and chemical doping to improve device performance.

An Undulator-Based Laser Wakefield Accelerator Electron Beam Diagnostic

NASA Astrophysics Data System (ADS)

Bakeman, Michael S.

Currently particle accelerators such as the Large Hadron Collider use RF cavities with a maximum field gradient of 50-100 MV/m to accelerate particles over long distances. A new type of plasma based accelerator called a Laser Plasma Accelerator (LPA) is being investigated at the LOASIS group at Lawrence Berkeley National Laboratory which can sustain field gradients of 10-100 GV/m. This new type of accelerator offers the potential to create compact high energy accelerators and light sources. In order to investigate the feasibility of producing a compact light source an undulator-based electron beam diagnostic for use on the LOASIS LPA has been built and calibrated. This diagnostic relies on the principal that the spectral analysis of synchrotron radiation from an undulator can reveal properties of the electron beam such as emittance, energy and energy spread. The effects of electron beam energy spread upon the harmonics of undulator produced synchrotron radiation were derived from the equations of motion of the beam and numerically simulated. The diagnostic consists of quadrupole focusing magnets to collimate the electron beam, a 1.5 m long undulator to produce the synchrotron radiation, and a high resolution high gain XUV spectrometer to analyze the radiation. The undulator was aligned and tuned in order to maximize the flux of synchrotron radiation produced. The spectrometer was calibrated at the Advanced Light Source, with the results showing the ability to measure electron beam energy spreads at resolutions as low as 0.1% rms, a major improvement over conventional magnetic spectrometers. Numerical simulations show the ability to measure energy spreads on realistic LPA produced electron beams as well as the improvements in measurements made with the quadrupole magnets. Experimentally the quadrupoles were shown to stabilize and focus the electron beams at specific energies for their insertion into the undulator, with the eventual hope of producing an all optical Free Electron Laser operating in the XUV and soft x-ray regimes.

Ultra-high-throughput Production of III-V/Si Wafer for Electronic and Photonic Applications

PubMed Central

Geum, Dae-Myeong; Park, Min-Su; Lim, Ju Young; Yang, Hyun-Duk; Song, Jin Dong; Kim, Chang Zoo; Yoon, Euijoon; Kim, SangHyeon; Choi, Won Jun

2016-01-01

Si-based integrated circuits have been intensively developed over the past several decades through ultimate device scaling. However, the Si technology has reached the physical limitations of the scaling. These limitations have fuelled the search for alternative active materials (for transistors) and the introduction of optical interconnects (called “Si photonics”). A series of attempts to circumvent the Si technology limits are based on the use of III-V compound semiconductor due to their superior benefits, such as high electron mobility and direct bandgap. To use their physical properties on a Si platform, the formation of high-quality III-V films on the Si (III-V/Si) is the basic technology ; however, implementing this technology using a high-throughput process is not easy. Here, we report new concepts for an ultra-high-throughput heterogeneous integration of high-quality III-V films on the Si using the wafer bonding and epitaxial lift off (ELO) technique. We describe the ultra-fast ELO and also the re-use of the III-V donor wafer after III-V/Si formation. These approaches provide an ultra-high-throughput fabrication of III-V/Si substrates with a high-quality film, which leads to a dramatic cost reduction. As proof-of-concept devices, this paper demonstrates GaAs-based high electron mobility transistors (HEMTs), solar cells, and hetero-junction phototransistors on Si substrates. PMID:26864968

Effectiveness of high energy electron beam against spore forming bacteria and viruses in slurry

NASA Astrophysics Data System (ADS)

Skowron, Krzysztof; Paluszak, Zbigniew; Olszewska, Halina; Wieczorek, Magdalena; Zimek, Zbigniew; Śrutek, Mścisław

2014-08-01

The aim of this study was to evaluate the efficacy of high energy electron beam effect against the most resistant indicators - spore forming bacteria (Clostridium sporogenes) and viruses (BPV) - which may occur in slurry. The applied doses of electron beam were 0, 1, 2, 3, 5, 7, 10 and 12 kGy. The theoretic inactivating dose of high energy electron beam for Clostridium sporogenes spores calculated based on the polynomial curve equation was 11.62 kGy, and determined on the basis of regression line equation for BPV virus was equal 23.49 kGy. The obtained results showed a quite good effectiveness of irradiation in bacterial spores inactivation, whereas relatively poor against viruses.

Nearly Efficiency-Droop-Free AlGaN-Based Ultraviolet Light-Emitting Diodes with a Specifically Designed Superlattice p-Type Electron Blocking Layer for High Mg Doping Efficiency.

PubMed

Zhang, Zi-Hui; Huang Chen, Sung-Wen; Chu, Chunshuang; Tian, Kangkai; Fang, Mengqian; Zhang, Yonghui; Bi, Wengang; Kuo, Hao-Chung

2018-04-24

This work reports a nearly efficiency-droop-free AlGaN-based deep ultraviolet light-emitting diode (DUV LED) emitting in the peak wavelength of 270 nm. The DUV LED utilizes a specifically designed superlattice p-type electron blocking layer (p-EBL). The superlattice p-EBL enables a high hole concentration in the p-EBL which correspondingly increases the hole injection efficiency into the multiple quantum wells (MQWs). The enhanced hole concentration within the MQW region can more efficiently recombine with electrons in the way of favoring the radiative recombination, leading to a reduced electron leakage current level. As a result, the external quantum efficiency for the proposed DUV LED structure is increased by 100% and the nearly efficiency-droop-free DUV LED structure is obtained experimentally.

Elucidating the charge carrier separation and working mechanism of CH3NH3PbI(3-x)Cl(x) perovskite solar cells.

PubMed

Edri, Eran; Kirmayer, Saar; Mukhopadhyay, Sabyasachi; Gartsman, Konstantin; Hodes, Gary; Cahen, David

2014-03-11

Developments in organic-inorganic lead halide-based perovskite solar cells have been meteoric over the last 2 years, with small-area efficiencies surpassing 15%. We address the fundamental issue of how these cells work by applying a scanning electron microscopy-based technique to cell cross-sections. By mapping the variation in efficiency of charge separation and collection in the cross-sections, we show the presence of two prime high efficiency locations, one at/near the absorber/hole-blocking-layer, and the second at/near the absorber/electron-blocking-layer interfaces, with the former more pronounced. This 'twin-peaks' profile is characteristic of a p-i-n solar cell, with a layer of low-doped, high electronic quality semiconductor, between a p- and an n-layer. If the electron blocker is replaced by a gold contact, only a heterojunction at the absorber/hole-blocking interface remains.

3D theory of a high-gain free-electron laser based on a transverse gradient undulator

NASA Astrophysics Data System (ADS)

Baxevanis, Panagiotis; Ding, Yuantao; Huang, Zhirong; Ruth, Ronald

2014-02-01

The performance of a free-electron laser (FEL) depends significantly on the various parameters of the driving electron beam. In particular, a large energy spread in the beam results in a substantial reduction of the FEL gain, an effect which is especially relevant when one considers FELs driven by plasma accelerators or ultimate storage rings. For such cases, one possible solution is to use a transverse gradient undulator (TGU). In this concept, the energy spread problem is mitigated by properly dispersing the electron beam and introducing a linear, transverse field dependence in the undulator. This paper presents a self-consistent theoretical analysis of a TGU-based, high-gain FEL which takes into account three-dimensional (3D) effects, including beam size variations along the undulator. The results of our theory compare favorably with simulation and are used in fast optimization studies of various x-ray FEL configurations.

Studies for determining thermal ion extraction potential for aluminium plasma generated by electron beam evaporator

NASA Astrophysics Data System (ADS)

Dileep Kumar, V.; Barnwal, Tripti A.; Mukherjee, Jaya; Gantayet, L. M.

2010-02-01

For effective evaporation of refractory metal, electron beam is found to be most suitable vapour generator source. Using electron beam, high throughput laser based purification processes are carried out. But due to highly concentrated electron beam, the vapour gets ionised and these ions lead to dilution of the pure product of laser based separation process. To estimate the concentration of these ions and extraction potential requirement to remove these ions from vapour stream, experiments have been conducted using aluminium as evaporant. The aluminium ingots were placed in water cooled copper crucible. Inserts were used to hold the evaporant, in order to attain higher number density in the vapour processing zone and also for confining the liquid metal. Parametric studies with beam power, number density and extraction potential were conducted. In this paper we discuss the trend of the generation of thermal ions and electrostatic field requirement for extraction.

Investigation of the Electron Acceleration by a High-Power Laser and a Density-Tapered Mixed-Gas Cell

NASA Astrophysics Data System (ADS)

Kim, Jinju; Phung, Vanessa L. J.; Kim, Minseok; Hur, Min-Sup; Suk, Hyyong

2017-10-01

Plasma-based accelerators can generate about 1000 times stronger acceleration field compared with RF-based conventional accelerators, which can be done by high power laser and plasma. There are many issues in this research and one of them is development of a good plasma source for higher electron beam energy. For this purpose, we are investigating a special type of plasma source, which is a density-tapered gas cell with a mixed-gas for easy injection. By this type of special gas cell, we expect higher electron beam energies with easy injection in the wakefield. In this poster, some experimental results for electron beam generation with the density-tapered mixed-gas cell are presented. In addition to the experimental results, CFD (Computational-Fluid-Dynamics) and PIC (Particle-In-Cell) simulation results are also presented for comparison studies.

A double-layer based model of ion confinement in electron cyclotron resonance ion source.

PubMed

Mascali, D; Neri, L; Celona, L; Castro, G; Torrisi, G; Gammino, S; Sorbello, G; Ciavola, G

2014-02-01

The paper proposes a new model of ion confinement in ECRIS, which can be easily generalized to any magnetic configuration characterized by closed magnetic surfaces. Traditionally, ion confinement in B-min configurations is ascribed to a negative potential dip due to superhot electrons, adiabatically confined by the magneto-static field. However, kinetic simulations including RF heating affected by cavity modes structures indicate that high energy electrons populate just a thin slab overlapping the ECR layer, while their density drops down of more than one order of magnitude outside. Ions, instead, diffuse across the electron layer due to their high collisionality. This is the proper physical condition to establish a double-layer (DL) configuration which self-consistently originates a potential barrier; this "barrier" confines the ions inside the plasma core surrounded by the ECR surface. The paper will describe a simplified ion confinement model based on plasma density non-homogeneity and DL formation.

Nearly Efficiency-Droop-Free AlGaN-Based Ultraviolet Light-Emitting Diodes with a Specifically Designed Superlattice p-Type Electron Blocking Layer for High Mg Doping Efficiency

NASA Astrophysics Data System (ADS)

Zhang, Zi-Hui; Huang Chen, Sung-Wen; Chu, Chunshuang; Tian, Kangkai; Fang, Mengqian; Zhang, Yonghui; Bi, Wengang; Kuo, Hao-Chung

2018-04-01

This work reports a nearly efficiency-droop-free AlGaN-based deep ultraviolet light-emitting diode (DUV LED) emitting in the peak wavelength of 270 nm. The DUV LED utilizes a specifically designed superlattice p-type electron blocking layer (p-EBL). The superlattice p-EBL enables a high hole concentration in the p-EBL which correspondingly increases the hole injection efficiency into the multiple quantum wells (MQWs). The enhanced hole concentration within the MQW region can more efficiently recombine with electrons in the way of favoring the radiative recombination, leading to a reduced electron leakage current level. As a result, the external quantum efficiency for the proposed DUV LED structure is increased by 100% and the nearly efficiency-droop-free DUV LED structure is obtained experimentally.

A Semi-Empirical Model for Forecasting Relativistic Electrons at Geostationary Orbit

NASA Technical Reports Server (NTRS)

Lyatsky, Wladislaw; Khazanov, George V.

2008-01-01

We developed a new prediction model for forecasting relativistic (>2MeV) electrons, which provides a VERY HIGH correlation between predicted and actually measured electron fluxes at geostationary orbit. This model implies the multi-step particle acceleration and is based on numerical integrating two linked continuity equations for primarily accelerated particles and relativistic electrons. The model includes a source and losses, and used solar wind data as only input parameters. We used the coupling function which is a best-fit combination of solar wind/Interplanetary Magnetic Field parameters, responsible for the generation of geomagnetic activity, as a source. The loss function was derived from experimental data. We tested the model for four year period 2004-2007. The correlation coefficient between predicted and actual values of the electron fluxes for whole four year period as well as for each of these years is about 0.9. The high and stable correlation between the computed and actual electron fluxes shows that the reliable forecasting these electrons at geostationary orbit is possible. The correlation coefficient between predicted and actual electron fluxes is stable and incredibly high.

Wisconsin SRF Electron Gun Commissioning

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bisognano, Joseph J.; Bissen, M.; Bosch, R.

The University of Wisconsin has completed fabrication and commissioning of a low frequency (199.6 MHz) superconducting electron gun based on a quarter wave resonator (QWR) cavity. Its concept was optimized to be the source for a CW free electron laser facility. The gun design includes active tuning and a high temperature superconducting solenoid. We will report on the status of the Wisconsin SRF electron gun program, including commissioning experience and first beam measurements.

Spin localization, magnetic ordering, and electronic properties of strongly correlated Ln2O3 sesquioxides (Ln=La, Ce, Pr, Nd)

NASA Astrophysics Data System (ADS)

El-Kelany, Kh. E.; Ravoux, C.; Desmarais, J. K.; Cortona, P.; Pan, Y.; Tse, J. S.; Erba, A.

2018-06-01

Lanthanide sesquioxides are strongly correlated materials characterized by highly localized unpaired electrons in the f band. Theoretical descriptions based on standard density functional theory (DFT) formulations are known to be unable to correctly describe their peculiar electronic and magnetic features. In this study, electronic and magnetic properties of the first four lanthanide sesquioxides in the series are characterized through a reliable description of spin localization as ensured by hybrid functionals of the DFT, which include a fraction of nonlocal Fock exchange. Because of the high localization of the f electrons, multiple metastable electronic configurations are possible for their ground state depending on the specific partial occupation of the f orbitals: the most stable configuration is here found and characterized for all systems. Magnetic ordering is explicitly investigated, and the higher stability of an antiferromagnetic configuration with respect to the ferromagnetic one is predicted. The critical role of the fraction of exchange on the description of their electronic properties (notably, on spin localization and on the electronic band gap) is addressed. In particular, a recently proposed theoretical approach based on a self-consistent definition—through the material dielectric response—of the optimal fraction of exchange in hybrid functionals is applied to these strongly correlated materials.

Rugged spin-polarized electron sources based on negative electron affinity GaAs photocathode with robust Cs2Te coating

NASA Astrophysics Data System (ADS)

Bae, Jai Kwan; Cultrera, Luca; DiGiacomo, Philip; Bazarov, Ivan

2018-04-01

Photocathodes capable of providing high intensity and highly spin-polarized electron beams with long operational lifetimes are of great interest for the next generation nuclear physics facilities like Electron Ion Colliders. We report on GaAs photocathodes activated by Cs2Te, a material well known for its robustness. GaAs activated by Cs2Te forms Negative Electron Affinity, and the lifetime for extracted charge is improved by a factor of 5 compared to that of GaAs activated by Cs and O2. The spin polarization of photoelectrons was measured using a Mott polarimeter and found to be independent from the activation method, thereby shifting the paradigm on spin-polarized electron sources employing photocathodes with robust coatings.

Design of High Efficiency High Power Electron Accelerator Systems Based on Normal Conducting RF Technology for Energy and Environmental Applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dolgashev, Valery; Tantawi, Sami

The goal of this project was to perform engineering design studies of three extremely high efficiency electron accelerators with the following parameters [1]: 2 MeV output beam energy and 1 MW average beam power; 10 MeV output energy and 10 MW; 10 MeV output energy and 1 MW. These linacs are intended for energy and environmental applications [2]. We based our designs on normal conducting radio-frequency technology. We have successfully reached this goal where we show rf-to-beam efficiency of 96.7 %, 97.2 %, and 79.6 % for these linacs.

Quaternary Chalcogenide-Based Misfit Nanotubes LnS(Se)-TaS(Se)2 (Ln = La, Ce, Nd, and Ho): Synthesis and Atomic Structural Studies.

PubMed

Lajaunie, Luc; Radovsky, Gal; Tenne, Reshef; Arenal, Raul

2018-01-16

We have synthesized quaternary chalcogenide-based misfit nanotubes LnS(Se)-TaS 2 (Se) (Ln = La, Ce, Nd, and Ho). None of the compounds described here were reported in the literature as a bulk compound. The characterization of these nanotubes, at the atomic level, has been developed via different transmission electron microscopy techniques, including high-resolution scanning transmission electron microscopy, electron diffraction, and electron energy-loss spectroscopy. In particular, quantification at sub-nanometer scale was achieved by acquiring high-quality electron energy-loss spectra at high energy (∼between 1000 and 2500 eV). Remarkably, the sulfur was found to reside primarily in the distorted rocksalt LnS lattice, while the Se is associated with the hexagonal TaSe 2 site. Consequently, these quaternary misfit layered compounds in the form of nanostructures possess a double superstructure of La/Ta and S/Se with the same periodicity. In addition, the interlayer spacing between the layers and the interatomic distances within the layer vary systematically in the nanotubes, showing clear reduction when going from the lightest (La atom) to the heaviest (Ho) atom. Amorphous layers, of different nature, were observed at the surface of the nanotubes. For La-based NTs, the thin external amorphous layer (inferior to 10 nm) can be ascribed to a Se deficiency. Contrarily, for Ho-based NTs, the thick amorphous layer (between 10 and 20 nm) is clearly ascribed to oxidation. All of these findings helped us to understand the atomic structure of these new compounds and nanotubes thereof.

Large-Scale Production of Carbon Nanotubes Using the Jefferson Lab Free Electron Laser

NASA Technical Reports Server (NTRS)

Holloway, Brian C.

2003-01-01

We report on our interdisciplinary program to use the Free Electron Laser (FEL) at the Thomas Jefferson National Accelerator Facility (J-Lab) for high-volume pulsed laser vaporization synthesis of carbon nanotubes. Based in part on the funding of from this project, a novel nanotube production system was designed, tested, and patented. Using this new system nanotube production rates over 100 times faster than conventional laser systems were achieved. Analysis of the material produced shows that it is of as high a quality as the standard laser-based materials.

Paper-based silver-nanowire electronic circuits with outstanding electrical conductivity and extreme bending stability.

PubMed

Huang, Gui-Wen; Xiao, Hong-Mei; Fu, Shao-Yun

2014-08-07

Here a facile, green and efficient printing-filtration-press (PFP) technique is reported for room-temperature (RT) mass-production of low-cost, environmentally friendly, high performance paper-based electronic circuits. The as-prepared silver nanowires (Ag-NWs) are uniformly deposited at RT on a pre-printed paper substrate to form high quality circuits via vacuum filtration and pressing. The PFP circuit exhibits more excellent electrical property and bending stability compared with other flexible circuits made by existing techniques. Furthermore, practical applications of the PFP circuits are demonstrated.

Investigation of abrupt degradation of drain current caused by under-gate crack in AlGaN/GaN high electron mobility transistors during high temperature operation stress

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zeng, Chang; Liao, XueYang; Li, RuGuan

2015-09-28

In this paper, we investigate the degradation mode and mechanism of AlGaN/GaN based high electron mobility transistors (HEMTs) during high temperature operation (HTO) stress. It demonstrates that there was abrupt degradation mode of drain current during HTO stress. The abrupt degradation is ascribed to the formation of crack under the gate which was the result of the brittle fracture of epilayer based on failure analysis. The origin of the mechanical damage under the gate is further investigated and discussed based on top-down scanning electron microscope, cross section transmission electron microscope and energy dispersive x-ray spectroscopy analysis, and stress simulation. Basedmore » on the coupled analysis of the failure physical feature and stress simulation considering the coefficient of thermal expansion (CTE) mismatch in different materials in gate metals/semiconductor system, the mechanical damage under the gate is related to mechanical stress induced by CTE mismatch in Au/Ti/Mo/GaN system and stress concentration caused by the localized structural damage at the drain side of the gate edge. These results indicate that mechanical stress induced by CTE mismatch of materials inside the device plays great important role on the reliability of AlGaN/GaN HEMTs during HTO stress.« less

High-Throughput Design of Two-Dimensional Electron Gas Systems Based on Polar/Nonpolar Perovskite Oxide Heterostructures

PubMed Central

Yang, Kesong; Nazir, Safdar; Behtash, Maziar; Cheng, Jianli

2016-01-01

The two-dimensional electron gas (2DEG) formed at the interface between two insulating oxides such as LaAlO3 and SrTiO3 (STO) is of fundamental and practical interest because of its novel interfacial conductivity and its promising applications in next-generation nanoelectronic devices. Here we show that a group of combinatorial descriptors that characterize the polar character, lattice mismatch, band gap, and the band alignment between the perovskite-oxide-based band insulators and the STO substrate, can be introduced to realize a high-throughput (HT) design of SrTiO3-based 2DEG systems from perovskite oxide quantum database. Equipped with these combinatorial descriptors, we have carried out a HT screening of all the polar perovskite compounds, uncovering 42 compounds of potential interests. Of these, Al-, Ga-, Sc-, and Ta-based compounds can form a 2DEG with STO, while In-based compounds exhibit a strain-induced strong polarization when deposited on STO substrate. In particular, the Ta-based compounds can form 2DEG with potentially high electron mobility at (TaO2)+/(SrO)0 interface. Our approach, by defining materials descriptors solely based on the bulk materials properties, and by relying on the perovskite-oriented quantum materials repository, opens new avenues for the discovery of perovskite-oxide-based functional interface materials in a HT fashion. PMID:27708415

Characteristics of the Mott transition and electronic states of high-temperature cuprate superconductors from the perspective of the Hubbard model

NASA Astrophysics Data System (ADS)

Kohno, Masanori

2018-04-01

A fundamental issue of the Mott transition is how electrons behaving as single particles carrying spin and charge in a metal change into those exhibiting separated spin and charge excitations (low-energy spin excitation and high-energy charge excitation) in a Mott insulator. This issue has attracted considerable attention particularly in relation to high-temperature cuprate superconductors, which exhibit electronic states near the Mott transition that are difficult to explain in conventional pictures. Here, from a new viewpoint of the Mott transition based on analyses of the Hubbard model, we review anomalous features observed in high-temperature cuprate superconductors near the Mott transition.

Thermally activated delayed fluorescence of a Zr-based metal–organic framework

DOE PAGES

Mieno, H.; Kabe, R.; Allendorf, M. D.; ...

2017-12-22

Here, the first metal–organic framework exhibiting thermally activated delayed fluorescence (TADF) was developed. The zirconium-based framework (UiO-68-dpa) uses a newly designed linker composed of a terphenyl backbone, an electron-accepting carboxyl group, and an electron-donating diphenylamine and exhibits green TADF emission with a photoluminescence quantum yield of 30% and high thermal stability.

Thread-like supercapacitors based on one-step spun nanocomposite yarns.

PubMed

Meng, Qinghai; Wang, Kai; Guo, Wei; Fang, Jin; Wei, Zhixiang; She, Xilin

2014-08-13

Thread-like electronic devices have attracted great interest because of their potential applications in wearable electronics. To produce high-performance, thread-like supercapacitors, a mixture of stable dispersions of single-walled carbon nanotubes and conducting polyaniline nanowires are prepared. Then, the mixture is spun into flexible yarns with a polyvinyl alcohol outer sheath by a one-step spinning process. The composite yarns show excellent mechanical properties and high electrical conductivities after sufficient washing to remove surfactants. After applying a further coating layer of gel electrolyte, two flexible yarns are twisted together to form a thread-like supercapacitor. The supercapacitor based on these two yarns (SWCNTs and PAniNWs) possesses a much higher specific capacitance than that based only on pure SWCNTs yarns, making it an ideal energy-storage device for wearable electronics. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Characterizing Bonding Patterns in Diradicals and Triradicals by Density-Based Wave Function Analysis: A Uniform Approach.

PubMed

Orms, Natalie; Rehn, Dirk R; Dreuw, Andreas; Krylov, Anna I

2018-02-13

Density-based wave function analysis enables unambiguous comparisons of the electronic structure computed by different methods and removes ambiguity of orbital choices. We use this tool to investigate the performance of different spin-flip methods for several prototypical diradicals and triradicals. In contrast to previous calibration studies that focused on energy gaps between high- and low spin-states, we focus on the properties of the underlying wave functions, such as the number of effectively unpaired electrons. Comparison of different density functional and wave function theory results provides insight into the performance of the different methods when applied to strongly correlated systems such as polyradicals. We show that canonical molecular orbitals for species like large copper-containing diradicals fail to correctly represent the underlying electronic structure due to highly non-Koopmans character, while density-based analysis of the same wave function delivers a clear picture of the bonding pattern.

Understanding Providers' Interaction with Graphical User Interface Pertaining to Clinical Document Usage in an Electronic Health Record System

ERIC Educational Resources Information Center

Rizvi, Rubina Fatima

2017-01-01

Despite high Electronic Health Record (EHR) system adoption rates by hospital and office-based practices, many users remain highly dissatisfied with the current state of EHRs. Sub-optimal EHR usability as a result of insufficient incorporation of User-Centered Design (UCD) approach during System Development Life Cycle process (SDLC) is considered…

Microstructural study of the nickel-base alloy WAZ-20 using qualitative and quantitative electron optical techniques

NASA Technical Reports Server (NTRS)

Young, S. G.

1973-01-01

The NASA nickel-base alloy WAZ-20 was analyzed by advanced metallographic techniques to qualitatively and quantitatively characterize its phases and stability. The as-cast alloy contained primary gamma-prime, a coarse gamma-gamma prime eutectic, a gamma-fine gamma prime matrix, and MC carbides. A specimen aged at 870 C for 1000 hours contained these same constituents and a few widely scattered high W particles. No detrimental phases (such as sigma or mu) were observed. Scanning electron microscope, light metallography, and replica electron microscope methods are compared. The value of quantitative electron microprobe techniques such as spot and area analysis is demonstrated.

Synthesis of ultrathin polymer insulating layers by initiated chemical vapour deposition for low-power soft electronics.

PubMed

Moon, Hanul; Seong, Hyejeong; Shin, Woo Cheol; Park, Won-Tae; Kim, Mincheol; Lee, Seungwon; Bong, Jae Hoon; Noh, Yong-Young; Cho, Byung Jin; Yoo, Seunghyup; Im, Sung Gap

2015-06-01

Insulating layers based on oxides and nitrides provide high capacitance, low leakage, high breakdown field and resistance to electrical stresses when used in electronic devices based on rigid substrates. However, their typically high process temperatures and brittleness make it difficult to achieve similar performance in flexible or organic electronics. Here, we show that poly(1,3,5-trimethyl-1,3,5-trivinyl cyclotrisiloxane) (pV3D3) prepared via a one-step, solvent-free technique called initiated chemical vapour deposition (iCVD) is a versatile polymeric insulating layer that meets a wide range of requirements for next-generation electronic devices. Highly uniform and pure ultrathin films of pV3D3 with excellent insulating properties, a large energy gap (>8 eV), tunnelling-limited leakage characteristics and resistance to a tensile strain of up to 4% are demonstrated. The low process temperature, surface-growth character, and solvent-free nature of the iCVD process enable pV3D3 to be grown conformally on plastic substrates to yield flexible field-effect transistors as well as on a variety of channel layers, including organics, oxides, and graphene.

Hydroxylated graphene-based flexible carbon film with ultrahigh electrical and thermal conductivity.

PubMed

Ding, Jiheng; Ur Rahman, Obaid; Zhao, Hongran; Peng, Wanjun; Dou, Huimin; Chen, Hao; Yu, Haibin

2017-09-29

Graphene-based films are widely used in the electronics industry. Here, surface hydroxylated graphene sheets (HGS) have been synthesized from natural graphite (NG) by a rapid and efficient molten hydroxide-assisted exfoliation technique. This method enables preparation of aqueous dispersible graphene sheets with a high dispersed concentration (∼10.0 mg ml -1 ) and an extraordinary production yield (∼100%). The HGS dispersion was processed into graphene flexible film (HGCF) through fast filtration, annealing treatment and mechanical compression. The HGS endows graphene flexible film with a high electrical conductivity of 11.5 × 10 4 S m -1 and a superior thermal conductivity of 1842 W m -1 K -1 . Simultaneously, the superflexible HGCF could endure 3000 repeated cycles of bending or folding. As a result, this graphene flexible film is expected to be integrated into electronic packaging and high-power electronics applications.

High-angle annular dark field scanning transmission electron microscopy on carbon-based functional polymer systems.

PubMed

Sourty, Erwan; van Bavel, Svetlana; Lu, Kangbo; Guerra, Ralph; Bar, Georg; Loos, Joachim

2009-06-01

Two purely carbon-based functional polymer systems were investigated by bright-field conventional transmission electron microscopy (CTEM) and high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM). For a carbon black (CB) filled polymer system, HAADF-STEM provides high contrast between the CB agglomerates and the polymer matrix so that details of the interface organization easily can be revealed and assignment of the CB phase is straightforward. For a second system, the functional polymer blend representing the photoactive layer of a polymer solar cell, details of its nanoscale organization could be observed that were not accessible with CTEM. By varying the camera length in HAADF-STEM imaging, the contrast can be enhanced between crystalline and amorphous compounds due to diffraction contrast so that nanoscale interconnections between domains are identified. In general, due to its incoherent imaging characteristics HAADF-STEM allows for reliable interpretation of the data obtained.

Two-dimensional electron gas characteristics of InP-based high electron mobility transistor terahertz detector

NASA Astrophysics Data System (ADS)

Li, Jin-Lun; Cui, Shao-Hui; Xu, Jian-Xing; Cui, Xiao-Ran; Guo, Chun-Yan; Ma, Ben; Ni, Hai-Qiao; Niu, Zhi-Chuan

2018-04-01

Not Available Project supported by the Foundation for Scientific Instrument and Equipment Development, Chinese Academy of Sciences (Grant No. YJKYYQ20170032) and the National Natural Science Foundation of China (Grant No. 61435012).

Structure of electroexplosive TiC-Ni composite coatings on steel after electron-beam treatment

NASA Astrophysics Data System (ADS)

Romanov, D. A.; Goncharova, E. N.; Budovskikh, E. A.; Gromov, V. E.; Ivanov, Yu. F.; Teresov, A. D.; Kazimirov, S. A.

2016-11-01

The phase and elemental compositions of the surface layer in Hardox 450 steel after electroexplosive spraying of a TiC-Ni composite coating and subsequent irradiation by a submillisecond high-energy electron beam are studied by the methods of modern physical metallurgy. The electron-beam treatment conditions that result in the formation of dense surface layers having high luster and a submicrocrystalline structure based on titanium carbide and nickel are found. It is shown that electron-beam treatment of an electroexplosive coating performed under melting conditions leads to the formation of a homogeneous (in structure and concentration) surface layer.

Ultrashort megaelectronvolt positron beam generation based on laser-accelerated electrons

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xu, Tongjun; Shen, Baifei, E-mail: bfshen@mail.shcnc.ac.cn; Xu, Jiancai, E-mail: jcxu@siom.ac.cn

Experimental generation of ultrashort MeV positron beams with high intensity and high density using a compact laser-driven setup is reported. A high-density gas jet is employed experimentally to generate MeV electrons with high charge; thus, a charge-neutralized MeV positron beam with high density is obtained during laser-accelerated electrons irradiating high-Z solid targets. It is a novel electron–positron source for the study of laboratory astrophysics. Meanwhile, the MeV positron beam is pulsed with an ultrashort duration of tens of femtoseconds and has a high peak intensity of 7.8 × 10{sup 21} s{sup −1}, thus allows specific studies of fast kinetics in millimeter-thick materials withmore » a high time resolution and exhibits potential for applications in positron annihilation spectroscopy.« less

Femtosecond dynamics of energetic electrons in high intensity laser-matter interactions

NASA Astrophysics Data System (ADS)

Pompili, R.; Anania, M. P.; Bisesto, F.; Botton, M.; Castellano, M.; Chiadroni, E.; Cianchi, A.; Curcio, A.; Ferrario, M.; Galletti, M.; Henis, Z.; Petrarca, M.; Schleifer, E.; Zigler, A.

2016-10-01

Highly energetic electrons are generated at the early phases of the interaction of short-pulse high-intensity lasers with solid targets. These escaping particles are identified as the essential core of picosecond-scale phenomena such as laser-based acceleration, surface manipulation, generation of intense magnetic fields and electromagnetic pulses. Increasing the number of the escaping electrons facilitate the late time processes in all cases. Up to now only indirect evidences of these important forerunners have been recorded, thus no detailed study of the governing mechanisms was possible. Here we report, for the first time, direct time-dependent measurements of energetic electrons ejected from solid targets by the interaction with a short-pulse high-intensity laser. We measured electron bunches up to 7 nanocoulombs charge, picosecond duration and 12 megaelectronvolts energy. Our ’snapshots’ capture their evolution with an unprecedented temporal resolution, demonstrat- ing a significant boost in charge and energy of escaping electrons when increasing the geometrical target curvature. These results pave the way toward significant improvement in laser acceleration of ions using shaped targets allowing the future development of small scale laser-ion accelerators.

Developing field emission electron sources based on ultrananocrystalline diamond for accelerators

DOE Office of Scientific and Technical Information (OSTI.GOV)

Baryshev, Sergey V.; Jing, Chunguang; Qiu, Jiaqi

Radiofrequency (RF) electron guns work by establishing an RF electromagnetic field inside a cavity having conducting walls. Electrons from a cathode are generated in the injector and immediately become accelerated by the RF electric field, and exit the gun as a series of electron bunches. Finding simple solutions for electron injection is a long standing problem. While energies of 30-50 MeV are achievable in linear accelerators (linacs), finding an electron source able to survive under MW electric loads and provide an average current of 1-10 mA is important. Meeting these requirements would open various linac applications for industry. The naturalmore » way to simplify and integrate RF injector architectures with the electron source would be to place the source directly into the RF cavity with no need for additional heaters/lasers. Euclid TechLabs in collaboration with Argonne National Lab are prototyping a family of highly effective field emission electron sources based on a nitrogen-incorporated ultrananocrystalline diamond ((N)UNCD) platform. Determined metrics suggest that our emitters are emissive enough to meet requirements for magnetized cooling at electron-ion colliders, linac-based radioisotope production and X-ray sterilization, and others.« less

Quartz Crystal Microbalance Electronic Interfacing Systems: A Review.

PubMed

Alassi, Abdulrahman; Benammar, Mohieddine; Brett, Dan

2017-12-05

Quartz Crystal Microbalance (QCM) sensors are actively being implemented in various fields due to their compatibility with different operating conditions in gaseous/liquid mediums for a wide range of measurements. This trend has been matched by the parallel advancement in tailored electronic interfacing systems for QCM sensors. That is, selecting the appropriate electronic circuit is vital for accurate sensor measurements. Many techniques were developed over time to cover the expanding measurement requirements (e.g., accommodating highly-damping environments). This paper presents a comprehensive review of the various existing QCM electronic interfacing systems. Namely, impedance-based analysis, oscillators (conventional and lock-in based techniques), exponential decay methods and the emerging phase-mass based characterization. The aforementioned methods are discussed in detail and qualitatively compared in terms of their performance for various applications. In addition, some theoretical improvements and recommendations are introduced for adequate systems implementation. Finally, specific design considerations of high-temperature microbalance systems (e.g., GaPO₄ crystals (GCM) and Langasite crystals (LCM)) are introduced, while assessing their overall system performance, stability and quality compared to conventional low-temperature applications.

Quartz Crystal Microbalance Electronic Interfacing Systems: A Review

PubMed Central

Benammar, Mohieddine; Brett, Dan

2017-01-01

Quartz Crystal Microbalance (QCM) sensors are actively being implemented in various fields due to their compatibility with different operating conditions in gaseous/liquid mediums for a wide range of measurements. This trend has been matched by the parallel advancement in tailored electronic interfacing systems for QCM sensors. That is, selecting the appropriate electronic circuit is vital for accurate sensor measurements. Many techniques were developed over time to cover the expanding measurement requirements (e.g., accommodating highly-damping environments). This paper presents a comprehensive review of the various existing QCM electronic interfacing systems. Namely, impedance-based analysis, oscillators (conventional and lock-in based techniques), exponential decay methods and the emerging phase-mass based characterization. The aforementioned methods are discussed in detail and qualitatively compared in terms of their performance for various applications. In addition, some theoretical improvements and recommendations are introduced for adequate systems implementation. Finally, specific design considerations of high-temperature microbalance systems (e.g., GaPO4 crystals (GCM) and Langasite crystals (LCM)) are introduced, while assessing their overall system performance, stability and quality compared to conventional low-temperature applications. PMID:29206212

An accurate online calibration system based on combined clamp-shape coil for high voltage electronic current transformers.

PubMed

Li, Zhen-hua; Li, Hong-bin; Zhang, Zhi

2013-07-01

Electronic transformers are widely used in power systems because of their wide bandwidth and good transient performance. However, as an emerging technology, the failure rate of electronic transformers is higher than that of traditional transformers. As a result, the calibration period needs to be shortened. Traditional calibration methods require the power of transmission line be cut off, which results in complicated operation and power off loss. This paper proposes an online calibration system which can calibrate electronic current transformers without power off. In this work, the high accuracy standard current transformer and online operation method are the key techniques. Based on the clamp-shape iron-core coil and clamp-shape air-core coil, a combined clamp-shape coil is designed as the standard current transformer. By analyzing the output characteristics of the two coils, the combined clamp-shape coil can achieve verification of the accuracy. So the accuracy of the online calibration system can be guaranteed. Moreover, by employing the earth potential working method and using two insulating rods to connect the combined clamp-shape coil to the high voltage bus, the operation becomes simple and safe. Tests in China National Center for High Voltage Measurement and field experiments show that the proposed system has a high accuracy of up to 0.05 class.

Use of the CEBAF Accelerator for IR and UV Free Electron Lasers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yunn, Byung; Sinclair, Charles; Leemann, Christoph

1992-08-01

The CEBAF superconducting linac is capable of accelerating electron beams suitable for driving high-power free-electron lasers. The 45 MeV injector linac with a 6 cm period wiggler can produce kilowatt output powers of infrared light (3.6-17 micrometer), while the 400 MeV north linac can produce ultraviolet light (~200 nm) at similar powers. The FELs require the addition of a high-peak intensity electron source (~ 60 A peak current) and extraction beam lines to wigglers with appropriate electron and photon optics. FEL operation is compatible with simultaneous baseline CEBAF nuclear physics operation. A design for a CEBAF-based FEL facility has beenmore » developed. The current status of the FEL project is reported.« less

SiC Integrated Circuits for Power Device Drivers Able to Operate in Harsh Environments

NASA Astrophysics Data System (ADS)

Godignon, P.; Alexandru, M.; Banu, V.; Montserrat, J.; Jorda, X.; Vellvehi, M.; Schmidt, B.; Michel, P.; Millan, J.

2014-08-01

The currently developed SiC electronic devices are more robust to high temperature operation and radiation exposure damage than correspondingly rated Si ones. In order to integrate the existent SiC high power and high temperature electronics into more complex systems, a SiC integrated circuit (IC) technology capable of operation at temperatures substantially above the conventional ones is required. Therefore, this paper is a step towards the development of ICs-control electronics that have to attend the harsh environment power applications. Concretely, we present the development of SiC MESFET-based digital circuitry, able to integrate gate driver for SiC power devices. Furthermore, a planar lateral power MESFET is developed with the aim of its co-integration on the same chip with the previously mentioned SiC digital ICs technology. And finally, experimental results on SiC Schottky-gated devices irradiated with protons and electrons are presented. This development is based on the Tungsten-Schottky interface technology used for the fabrication of stable SiC Schottky diodes for the European Space Agency Mission BepiColombo.

Decoupling electron and ion storage and the path from interfacial storage to artificial electrodes

NASA Astrophysics Data System (ADS)

Chen, Chia-Chin; Maier, Joachim

2018-02-01

The requirements for rechargeable batteries place high demands on the electrodes. Efficient storage means accommodating both ions and electrons, not only in substantial amounts, but also with substantial velocities. The materials' space could be largely extended by decoupling the roles of ions and electrons such that transport and accommodation of ions take place in one phase of a composite, and transport and accommodation of electrons in the other phase. Here we discuss this synergistic concept being equally applicable for positive and negative electrodes along with examples from the literature for Li-based and Ag-based cells. Not only does the concept have the potential to mitigate the trade-off between power density and energy density, it also enables a generalized view of bulk and interfacial storage as necessary for nanocrystals. It furthermore allows for testable predictions of heterogeneous storage in passivation layers, dependence of transfer resistance on the state of charge, or heterogeneous storage of hydrogen at appropriate contacts. We also present an outlook on constructing artificial mixed-conductor electrodes that have the potential to achieve both high energy density and high power density.

Three-Dimensional Graphene Structure for Healable Flexible Electronics Based on Diels-Alder Chemistry.

PubMed

Li, Jinhui; Liu, Qiang; Ho, Derek; Zhao, Songfang; Wu, Shuwen; Ling, Lei; Han, Fei; Wu, Xinxiu; Zhang, Guoping; Sun, Rong; Wong, Ching-Ping

2018-03-21

Wearable electronics with excellent stretchability and sensitivity have emerged as a very promising field with wide applications such as e-skin and human motion detection. Although three-dimensional (3D) graphene structures (GS) have been reported for high-performance strain sensors, challenges still remain such as the high cost of GS preparation, low stretchability, and the lack of ability to heal itself. In this paper, we reported a novel self-healing flexible electronics with 3D GS based on Diels-Alder (DA) chemistry. Furfurylamine (FA) was employed as a reducing as well as a modifying agent, forming GS by FA (FAGS)/DA bonds contained polyurethane with the "infiltrate-gel-dry" process. The as-prepared composite exhibited excellent stretchability (200%) and intrinsic conductivity with low incorporation of graphene (about 2 wt %), which could be directly employed for flexible electronics to detect human motions. Besides, the FAGS/DAPU composite exhibited lower temperature retro-DA response for the continuous graphene networks. Highly effective healing of the composites by heat and microwave has been demonstrated successfully.

Field electron emission based on resonant tunneling in diamond/CoSi2/Si quantum well nanostructures

PubMed Central

Gu, Changzhi; Jiang, Xin; Lu, Wengang; Li, Junjie; Mantl, Siegfried

2012-01-01

Excellent field electron emission properties of a diamond/CoSi2/Si quantum well nanostructure are observed. The novel quantum well structure consists of high quality diamond emitters grown on bulk Si substrate with a nanosized epitaxial CoSi2 conducting interlayer. The results show that the main emission properties were modified by varying the CoSi2 thickness and that stable, low-field, high emission current and controlled electron emission can be obtained by using a high quality diamond film and a thicker CoSi2 interlayer. An electron resonant tunneling mechanism in this quantum well structure is suggested, and the tunneling is due to the long electron mean free path in the nanosized CoSi2 layer. This structure meets most of the requirements for development of vacuum micro/nanoelectronic devices and large-area cold cathodes for flat-panel displays. PMID:23082241

Longitudinal dynamics of twin electron bunches in the Linac Coherent Light Source

DOE PAGES

Zhang, Zhen; Ding, Yuantao; Marinelli, Agostino; ...

2015-03-02

The recent development of two-color x-ray free-electron lasers, as well as the successful demonstration of high-gradient witness bunch acceleration in a plasma, have generated strong interest in electron bunch trains, where two or more electron bunches are generated, accelerated and compressed in the same accelerating bucket. In this paper we give a detailed analysis of a twin-bunch technique in a high-energy linac. This method allows the generation of two electron bunches with high peak current and independent control of time delay and energy separation. We find that the wakefields in the accelerator structures play an important role in the twin-bunchmore » compression, and through analysis show that they can be used to extend the available time delay range. As a result, based on the theoretical model and simulations we propose several methods to achieve larger time delay.« less

Field electron emission based on resonant tunneling in diamond/CoSi2/Si quantum well nanostructures.

PubMed

Gu, Changzhi; Jiang, Xin; Lu, Wengang; Li, Junjie; Mantl, Siegfried

2012-01-01

Excellent field electron emission properties of a diamond/CoSi(2)/Si quantum well nanostructure are observed. The novel quantum well structure consists of high quality diamond emitters grown on bulk Si substrate with a nanosized epitaxial CoSi(2) conducting interlayer. The results show that the main emission properties were modified by varying the CoSi(2) thickness and that stable, low-field, high emission current and controlled electron emission can be obtained by using a high quality diamond film and a thicker CoSi(2) interlayer. An electron resonant tunneling mechanism in this quantum well structure is suggested, and the tunneling is due to the long electron mean free path in the nanosized CoSi(2) layer. This structure meets most of the requirements for development of vacuum micro/nanoelectronic devices and large-area cold cathodes for flat-panel displays.

Imaging the square of the correlated two-electron wave function of a hydrogen molecule

DOE PAGES

Waitz, M.; Bello, R. Y.; Metz, D.; ...

2017-12-22

The toolbox for imaging molecules is well-equipped today. Some techniques visualize the geometrical structure, others the electron density or electron orbitals. Molecules are many-body systems for which the correlation between the constituents is decisive and the spatial and the momentum distribution of one electron depends on those of the other electrons and the nuclei. Such correlations have escaped direct observation by imaging techniques so far. Here, we implement an imaging scheme which visualizes correlations between electrons by coincident detection of the reaction fragments after high energy photofragmentation. With this technique, we examine the H 2 two-electron wave function in whichmore » electron-electron correlation beyond the mean-field level is prominent. We visualize the dependence of the wave function on the internuclear distance. High energy photoelectrons are shown to be a powerful tool for molecular imaging. Finally, our study paves the way for future time resolved correlation imaging at FELs and laser based X-ray sources.« less

Imaging the square of the correlated two-electron wave function of a hydrogen molecule.

PubMed

Waitz, M; Bello, R Y; Metz, D; Lower, J; Trinter, F; Schober, C; Keiling, M; Lenz, U; Pitzer, M; Mertens, K; Martins, M; Viefhaus, J; Klumpp, S; Weber, T; Schmidt, L Ph H; Williams, J B; Schöffler, M S; Serov, V V; Kheifets, A S; Argenti, L; Palacios, A; Martín, F; Jahnke, T; Dörner, R

2017-12-22

The toolbox for imaging molecules is well-equipped today. Some techniques visualize the geometrical structure, others the electron density or electron orbitals. Molecules are many-body systems for which the correlation between the constituents is decisive and the spatial and the momentum distribution of one electron depends on those of the other electrons and the nuclei. Such correlations have escaped direct observation by imaging techniques so far. Here, we implement an imaging scheme which visualizes correlations between electrons by coincident detection of the reaction fragments after high energy photofragmentation. With this technique, we examine the H 2 two-electron wave function in which electron-electron correlation beyond the mean-field level is prominent. We visualize the dependence of the wave function on the internuclear distance. High energy photoelectrons are shown to be a powerful tool for molecular imaging. Our study paves the way for future time resolved correlation imaging at FELs and laser based X-ray sources.

Imaging the square of the correlated two-electron wave function of a hydrogen molecule

DOE Office of Scientific and Technical Information (OSTI.GOV)

Waitz, M.; Bello, R. Y.; Metz, D.

The toolbox for imaging molecules is well-equipped today. Some techniques visualize the geometrical structure, others the electron density or electron orbitals. Molecules are many-body systems for which the correlation between the constituents is decisive and the spatial and the momentum distribution of one electron depends on those of the other electrons and the nuclei. Such correlations have escaped direct observation by imaging techniques so far. Here, we implement an imaging scheme which visualizes correlations between electrons by coincident detection of the reaction fragments after high energy photofragmentation. With this technique, we examine the H 2 two-electron wave function in whichmore » electron-electron correlation beyond the mean-field level is prominent. We visualize the dependence of the wave function on the internuclear distance. High energy photoelectrons are shown to be a powerful tool for molecular imaging. Finally, our study paves the way for future time resolved correlation imaging at FELs and laser based X-ray sources.« less

Geothrix fermentans Secretes Two Different Redox-Active Compounds To Utilize Electron Acceptors across a Wide Range of Redox Potentials

PubMed Central

Mehta-Kolte, Misha G.

2012-01-01

The current understanding of dissimilatory metal reduction is based primarily on isolates from the proteobacterial genera Geobacter and Shewanella. However, environments undergoing active Fe(III) reduction often harbor less-well-studied phyla that are equally abundant. In this work, electrochemical techniques were used to analyze respiratory electron transfer by the only known Fe(III)-reducing representative of the Acidobacteria, Geothrix fermentans. In contrast to previously characterized metal-reducing bacteria, which typically reach maximal rates of respiration at electron acceptor potentials of 0 V versus standard hydrogen electrode (SHE), G. fermentans required potentials as high as 0.55 V to respire at its maximum rate. In addition, G. fermentans secreted two different soluble redox-active electron shuttles with separate redox potentials (−0.2 V and 0.3 V). The compound with the lower midpoint potential, responsible for 20 to 30% of electron transfer activity, was riboflavin. The behavior of the higher-potential compound was consistent with hydrophilic UV-fluorescent molecules previously found in G. fermentans supernatants. Both electron shuttles were also produced when cultures were grown with Fe(III), but not when fumarate was the electron acceptor. This study reveals that Geothrix is able to take advantage of higher-redox-potential environments, demonstrates that secretion of flavin-based shuttles is not confined to Shewanella, and points to the existence of high-potential-redox-active compounds involved in extracellular electron transfer. Based on differences between the respiratory strategies of Geothrix and Geobacter, these two groups of bacteria could exist in distinctive environmental niches defined by redox potential. PMID:22843516

Final Technical Report - 300°C Capable Electronics Platform and Temperature Sensor System For Enhanced Geothermal Systems

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen, Cheng-Po; Shaddock, David; Sandvik, Peter

2012-11-30

A silicon carbide (SiC) based electronic temperature sensor prototype has been demonstrated to operate at 300°C. We showed continuous operation of 1,000 hours with SiC operational amplifier and surface mounted discreet resistors and capacitors on a ceramic circuit board. This feasibility demonstration is a major milestone in the development of high temperature electronics in general and high temperature geothermal exploration and well management tools in particular. SiC technology offers technical advantages that are not found in competing technologies such as silicon-on-insulator (SOI) at high temperatures of 200°C to 300°C and beyond. The SiC integrated circuits and packaging methods can bemore » used in new product introduction by GE Oil and Gas for high temperature down-hole tools. The existing SiC fabrication facility at GE is sufficient to support the quantities currently demanded by the marketplace, and there are other entities in the United States and other countries capable of ramping up SiC technology manufacturing. The ceramic circuit boards are different from traditional organic-based electronics circuit boards, but the fabrication process is compatible with existing ceramic substrate manufacturing. This project has brought high temperature electronics forward, and brings us closer to commercializing tools that will enable and reduce the cost of enhanced geothermal technology to benefit the public in terms of providing clean renewable energy at lower costs.« less

November 2013 Analysis of High Energy Electrons on the Japan Experimental Module (JEM: Kibo)

NASA Technical Reports Server (NTRS)

Badavi, Francis F.; Matsumoto, Haruhisa; Koga, Kiyokazu; Mertens, Christopher J.; Slaba, Tony C.; Norbury, John W.

2015-01-01

Albedo (precipitating/splash) electrons, created by galactic cosmic rays (GCR) interaction with the upper atmosphere move upwards away from the surface of the earth. In the past validation work these particles were often considered to have negligible contribution to astronaut radiation exposure on the International Space Station (ISS). Estimates of astronaut exposure based on the available Computer Aided Design (CAD) models of ISS consistently underestimated measurements onboard ISS when the contribution of albedo particles to exposure were neglected. Recent measurements of high energy electrons outside ISS Japan Experimental Module (JEM) using Exposed Facility (EF), Space Environment Data Acquisition Equipment - Attached Payload (SEDA-AP) and Standard DOse Monitor (SDOM), indicates the presence of high energy electrons at ISS altitude. In this presentation the status of these energetic electrons is reviewed and mechanism for the creation of these particles inside/outside South Atlantic Anomaly (SAA) region explained. In addition, limited dosimetric evaluation of these electrons at 600 MeV and 10 GeV is presented.

Coherent Leinard-Wiechert fields produced by FELs (free-electron laser). Technical report, 14 January 1981-13 January 1982

DOE Office of Scientific and Technical Information (OSTI.GOV)

Elias, L.R.

1981-12-01

Results are presented of a three-dimensional numerical analysis of the radiation fields produced in a free-electron laser. The method used here to obtain the spatial and temporal behavior of the radiated fields is based on the coherent superposition of the radiated fields is based on the coherent superposition of the exact Lienard-Wiechert fields produced by each electron in the beam. Interference effects are responsible for the narrow angular radiation patterns obtained and for the high degree of monochromaticity of the radiated fields.

Enhancement of High-Speed Infrared Array Electronics (Center Director's Discretionary Fund)

NASA Technical Reports Server (NTRS)

Sutherland, W. T.

1996-01-01

A state-of-the-art infrared detector was to be used as the sensor in a new spectrometer-camera for astronomical observations. The sensitivity of the detector required the use of low-noise, high-speed electronics in the system design. The key component in the electronic system was the pre-amplifier that amplified the low voltage signal coming from the detector. The system was designed based on the selection of the amplifier and that was driven by the maximum noise level, which would yield the desired sensitivity for the telescope system.

Superlattice structure modeling and simulation of High Electron Mobility Transistor for improved performance

NASA Astrophysics Data System (ADS)

Munusami, Ravindiran; Yakkala, Bhaskar Rao; Prabhakar, Shankar

2013-12-01

Magnetic tunnel junction were made by inserting the magnetic materials between the source, channel and the drain of the High Electron Mobility Transistor (HEMT) to enhance the performance. Material studio software package was used to design the superlattice layers. Different cases were analyzed to optimize the performance of the device by placing the magnetic material at different positions of the device. Simulation results based on conductivity reveals that the device has a very good electron transport due to the magnetic materials and will amplify very low frequency signals.

Challenges for single molecule electronic devices with nanographene and organic molecules. Do single molecules offer potential as elements of electronic devices in the next generation?

NASA Astrophysics Data System (ADS)

Enoki, Toshiaki; Kiguchi, Manabu

2018-03-01

Interest in utilizing organic molecules to fabricate electronic materials has existed ever since organic (molecular) semiconductors were first discovered in the 1950s. Since then, scientists have devoted serious effort to the creation of various molecule-based electronic systems, such as molecular metals and molecular superconductors. Single-molecule electronics and the associated basic science have emerged over the past two decades and provided hope for the development of highly integrated molecule-based electronic devices in the future (after the Si-based technology era has ended). Here, nanographenes (nano-sized graphene) with atomically precise structures are among the most promising molecules that can be utilized for electronic/spintronic devices. To manipulate single small molecules for an electronic device, a single molecular junction has been developed. It is a powerful tool that allows even small molecules to be utilized. External electric, magnetic, chemical, and mechanical perturbations can change the physical and chemical properties of molecules in a way that is different from bulk materials. Therefore, the various functionalities of molecules, along with changes induced by external perturbations, allows us to create electronic devices that we cannot create using current top-down Si-based technology. Future challenges that involve the incorporation of condensed matter physics, quantum chemistry calculations, organic synthetic chemistry, and electronic device engineering are expected to open a new era in single-molecule device electronic technology.

Proton irradiation effects on gallium nitride-based devices

NASA Astrophysics Data System (ADS)

Karmarkar, Aditya P.

Proton radiation effects on state-of-the-art gallium nitride-based devices were studied using Schottky diodes and high electron-mobility transistors. The device degradation was studied over a wide range of proton fluences. This study allowed for a correlation between proton irradiation effects between different types of devices and enhanced the understanding of the mechanisms responsible for radiation damage in GaN-based devices. Proton irradiation causes reduced carrier concentration and increased series resistance and ideality factor in Schottky diodes. 1.0-MeV protons cause greater degradation than 1.8-MeV protons because of their higher non-ionizing energy loss. The displacement damage in Schottky diodes recovers during annealing. High electron-mobility transistors exhibit extremely high radiation tolerance, continuing to perform up to a fluence of ˜1014 cm-2 of 1.8-MeV protons. Proton irradiation creates defect complexes in the thin-film structure. Decreased sheet carrier mobility due to increased carrier scattering and decreased sheet carrier density due to carrier removal by the defect centers are the primary damage mechanisms. Interface disorder at either the Schottky or the Ohmic contact plays a relatively unimportant part in overall device degradation in both Schottky diodes and high electron-mobility transistors.

Tunnel based spin injection devices for semiconductor spintronics

NASA Astrophysics Data System (ADS)

Jiang, Xin

This dissertation summarizes the work on spin-dependent electron transport and spin injection in tunnel based spintronic devices. In particular, it focuses on a novel three terminal hot electron device combining ferromagnetic metals and semiconductors---the magnetic tunnel transistor (MTT). The MTT has extremely high magnetic field sensitivity and is a useful tool to explore spin-dependent electron transport in metals, semiconductors, and at their interfaces over a wide energy range. In Chap. 1, the basic concept and fabrication of the MTT are discussed. Two types of MTTs, with ferromagnetic single and spin-valve base layers, respectively, are introduced and compared. In the following chapters, the transport properties of the MTT are discussed in detail, including the spin-dependent hot electron attenuation lengths in CoFe and NiFe thin films on GaAs (Chap. 2), the bias voltage dependence of the magneto-current (Chap. 3), the giant magneto-current effect in MTTs with a spin-valve base (Chap. 4), and the influence of non-magnetic seed layers on magneto-electronic properties of MTTs with a Si collector (Chap. 5). Chap. 6 concentrates on electrical injection of spin-polarized electrons into semiconductors, which is an essential ingredient in semiconductor spintronics. Two types of spin injectors are discussed: an MTT injector and a CoFe/MgO tunnel injector. The spin polarization of the injected electron current is detected optically by measuring the circular polarization of electroluminescence from a quantum well light emitting diode. Using an MTT injector a spin polarization of ˜10% is found for injection electron energy of ˜2 eV at 1.4K. This moderate spin polarization is most likely limited by significant electron spin relaxation at high energy. Much higher spin injection efficiency is obtained by using a CoFe/MgO tunnel injector with spin polarization values of ˜50% at 100K. The temperature and bias dependence of the electroluminescence polarization provides insight into spin relaxation mechanisms within the semiconductor heterostructure.

A novel strategy to increase separated electron-hole dipoles in commercial Si based solar panel to assist photovoltaic effect

NASA Astrophysics Data System (ADS)

Feng, Yefeng; He, Cheng-En; Xu, Zhichao; Hu, Jianbing; Peng, Cheng

2018-01-01

Interface induced polarization has been found to have a significant impact on dielectric properties of 2-2 type polymer composites bearing Si based semi-conducting ceramic sheets. Inherent overall polarity of polymer layers in 2-2 composites has been verified to be closely connected with interface effect and achieved permittivity in composites. In present work, conducting performances of monocrystalline Si sheets coated by varied high polarity material layers were deeply researched. The positive results inspired us to propose a novel strategy to improve separated electron-hole dipoles in commercial Si based solar cell panel for assisting photovoltaic effect, based on strong interface induced polarization. Conducting features of solar panels coated by two different high polarity polymer layers were detected to be greatly elevated compared with solar panel standalone, thanks to interface induced polarization between panel and polymer. Polymer coating with higher polarity would lead to more separated electron-hole dipole pairs in solar panel contributing to higher conductivity of panel. Valid synergy of interface effect and photovoltaic effect was based on their unidirectional traits of electron transfer. Dielectric properties of solar panels in composites further confirmed that strategy. This work might provide a facile route to prepare promising Si based solar panels with higher photoelectric conversion efficiency by enhancing interface induced polarization between panel and polymer coating.

Static and dynamic behavior of a Si/Si0.8Ge0.2/Si heterojunction bipolar transistor using Monte Carlo simulation

NASA Astrophysics Data System (ADS)

Galdin, Sylvie; Dollfus, Philippe; Hesto, Patrice

1994-03-01

A theoretical study of a Si/Si1-xGex/Si heterojunction bipolar transistor using Monte Carlo simulations is reported. The geometry and composition of the emitter-base junction are optimized using one-dimensional simulations with a view to improving electron transport in the base. It is proposed to introduce a thin Si-P spacer layer, between the Si-N emitter and the SiGe-P base, which allows launching hot electrons into the base despite the lack of natural conduction-band discontinuity between Si and strain SiGe. The high-frequency behavior of the complete transistor is then studied using 2D modeling. A method of microwave analysis using small signal Monte Carlo simulations that consists of expanding the terminal currents in Fourier series is presented. A cutoff frequency fT of 68 GHz has been extracted. Finally, the occurrence of a parasitic electron barrier at the collector-base junction is responsible for the fT fall-off at high collector current density. This parasitic barrier is lowered through the influence of the collector potential.

Carbon nanotube transistor based high-frequency electronics

NASA Astrophysics Data System (ADS)

Schroter, Michael

At the nanoscale carbon nanotubes (CNTs) have higher carrier mobility and carrier velocity than most incumbent semiconductors. Thus CNT based field-effect transistors (FETs) are being considered as strong candidates for replacing existing MOSFETs in digital applications. In addition, the predicted high intrinsic transit frequency and the more recent finding of ways to achieve highly linear transfer characteristics have inspired investigations on analog high-frequency (HF) applications. High linearity is extremely valuable for an energy efficient usage of the frequency spectrum, particularly in mobile communications. Compared to digital applications, the much more relaxed constraints for CNT placement and lithography combined with already achieved operating frequencies of at least 10 GHz for fabricated devices make an early entry in the low GHz HF market more feasible than in large-scale digital circuits. Such a market entry would be extremely beneficial for funding the development of production CNTFET based process technology. This talk will provide an overview on the present status and feasibility of HF CNTFET technology will be given from an engineering point of view, including device modeling, experimental results, and existing roadblocks. Carbon nanotube transistor based high-frequency electronics.

Calculations of the Electron Energy Distribution Function in a Uranium Plasma by Analytic and Monte Carlo Techniques. Ph.D. Thesis

NASA Technical Reports Server (NTRS)

Bathke, C. G.

1976-01-01

Electron energy distribution functions were calculated in a U235 plasma at 1 atmosphere for various plasma temperatures and neutron fluxes. The distributions are assumed to be a summation of a high energy tail and a Maxwellian distribution. The sources of energetic electrons considered are the fission-fragment induced ionization of uranium and the electron induced ionization of uranium. The calculation of the high energy tail is reduced to an electron slowing down calculation, from the most energetic source to the energy where the electron is assumed to be incorporated into the Maxwellian distribution. The pertinent collisional processes are electron-electron scattering and electron induced ionization and excitation of uranium. Two distinct methods were employed in the calculation of the distributions. One method is based upon the assumption of continuous slowing and yields a distribution inversely proportional to the stopping power. An iteration scheme is utilized to include the secondary electron avalanche. In the other method, a governing equation is derived without assuming continuous electron slowing. This equation is solved by a Monte Carlo technique.

The physics of solid-state neutron detector materials and geometries.

PubMed

Caruso, A N

2010-11-10

Detection of neutrons, at high total efficiency, with greater resolution in kinetic energy, time and/or real-space position, is fundamental to the advance of subfields within nuclear medicine, high-energy physics, non-proliferation of special nuclear materials, astrophysics, structural biology and chemistry, magnetism and nuclear energy. Clever indirect-conversion geometries, interaction/transport calculations and modern processing methods for silicon and gallium arsenide allow for the realization of moderate- to high-efficiency neutron detectors as a result of low defect concentrations, tuned reaction product ranges, enhanced effective omnidirectional cross sections and reduced electron-hole pair recombination from more physically abrupt and electronically engineered interfaces. Conversely, semiconductors with high neutron cross sections and unique transduction mechanisms capable of achieving very high total efficiency are gaining greater recognition despite the relative immaturity of their growth, lithographic processing and electronic structure understanding. This review focuses on advances and challenges in charged-particle-based device geometries, materials and associated mechanisms for direct and indirect transduction of thermal to fast neutrons within the context of application. Calorimetry- and radioluminescence-based intermediate processes in the solid state are not included.

Absorptive pinhole collimators for ballistic Dirac fermions in graphene

PubMed Central

Barnard, Arthur W.; Hughes, Alex; Sharpe, Aaron L.; Watanabe, Kenji; Taniguchi, Takashi; Goldhaber-Gordon, David

2017-01-01

Ballistic electrons in solids can have mean free paths far larger than the smallest features patterned by lithography. This has allowed development and study of solid-state electron-optical devices such as beam splitters and quantum point contacts, which have informed our understanding of electron flow and interactions. Recently, high-mobility graphene has emerged as an ideal two-dimensional semimetal that hosts unique chiral electron-optical effects due to its honeycomb crystalline lattice. However, this chiral transport prevents the simple use of electrostatic gates to define electron-optical devices in graphene. Here we present a method of creating highly collimated electron beams in graphene based on collinear pairs of slits, with absorptive sidewalls between the slits. By this method, we achieve beams with angular width 18° or narrower, and transmission matching classical ballistic predictions. PMID:28504264

Neuron-Inspired Fe3O4/Conductive Carbon Filament Network for High-Speed and Stable Lithium Storage.

PubMed

Hao, Shu-Meng; Li, Qian-Jie; Qu, Jin; An, Fei; Zhang, Yu-Jiao; Yu, Zhong-Zhen

2018-05-17

Construction of a continuous conductance network with high electron-transfer rate is extremely important for high-performance energy storage. Owing to the highly efficient mass transport and information transmission, neurons are exactly a perfect model for electron transport, inspiring us to design a neuron-like reaction network for high-performance lithium-ion batteries (LIBs) with Fe 3 O 4 as an example. The reactive cores (Fe 3 O 4 ) are protected by carbon shells and linked by carbon filaments, constituting an integrated conductance network. Thus, once the reaction starts, the electrons released from every Fe 3 O 4 cores are capable of being transferred rapidly through the whole network directly to the external circuit, endowing the nanocomposite with tremendous rate performance and ultralong cycle life. After 1000 cycles at current densities as high as 1 and 2 A g -1 , charge capacities of the as-synthesized nanocomposite maintain 971 and 715 mA h g -1 , respectively, much higher than those of reported Fe 3 O 4 -based anode materials. The Fe 3 O 4 -based conductive network provides a new idea for future developments of high-rate-performance LIBs.

A Novel Low Energy Electron Microscope for DNA Sequencing and Surface Analysis

PubMed Central

Mankos, M.; Shadman, K.; Persson, H.H.J.; N’Diaye, A.T.; Schmid, A.K.; Davis, R.W.

2014-01-01

Monochromatic, aberration-corrected, dual-beam low energy electron microscopy (MAD-LEEM) is a novel technique that is directed towards imaging nanostructures and surfaces with sub-nanometer resolution. The technique combines a monochromator, a mirror aberration corrector, an energy filter, and dual beam illumination in a single instrument. The monochromator reduces the energy spread of the illuminating electron beam, which significantly improves spectroscopic and spatial resolution. Simulation results predict that the novel aberration corrector design will eliminate the second rank chromatic and third and fifth order spherical aberrations, thereby improving the resolution into the sub-nanometer regime at landing energies as low as one hundred electron-Volts. The energy filter produces a beam that can extract detailed information about the chemical composition and local electronic states of non-periodic objects such as nanoparticles, interfaces, defects, and macromolecules. The dual flood illumination eliminates charging effects that are generated when a conventional LEEM is used to image insulating specimens. A potential application for MAD-LEEM is in DNA sequencing, which requires high resolution to distinguish the individual bases and high speed to reduce the cost. The MAD-LEEM approach images the DNA with low electron impact energies, which provides nucleobase contrast mechanisms without organometallic labels. Furthermore, the micron-size field of view when combined with imaging on the fly provides long read lengths, thereby reducing the demand on assembling the sequence. Experimental results from bulk specimens with immobilized single-base oligonucleotides demonstrate that base specific contrast is available with reflected, photo-emitted, and Auger electrons. Image contrast simulations of model rectangular features mimicking the individual nucleotides in a DNA strand have been developed to translate measurements of contrast on bulk DNA to the detectability of individual DNA bases in a sequence. PMID:24524867

A novel low energy electron microscope for DNA sequencing and surface analysis.

PubMed

Mankos, M; Shadman, K; Persson, H H J; N'Diaye, A T; Schmid, A K; Davis, R W

2014-10-01

Monochromatic, aberration-corrected, dual-beam low energy electron microscopy (MAD-LEEM) is a novel technique that is directed towards imaging nanostructures and surfaces with sub-nanometer resolution. The technique combines a monochromator, a mirror aberration corrector, an energy filter, and dual beam illumination in a single instrument. The monochromator reduces the energy spread of the illuminating electron beam, which significantly improves spectroscopic and spatial resolution. Simulation results predict that the novel aberration corrector design will eliminate the second rank chromatic and third and fifth order spherical aberrations, thereby improving the resolution into the sub-nanometer regime at landing energies as low as one hundred electron-Volts. The energy filter produces a beam that can extract detailed information about the chemical composition and local electronic states of non-periodic objects such as nanoparticles, interfaces, defects, and macromolecules. The dual flood illumination eliminates charging effects that are generated when a conventional LEEM is used to image insulating specimens. A potential application for MAD-LEEM is in DNA sequencing, which requires high resolution to distinguish the individual bases and high speed to reduce the cost. The MAD-LEEM approach images the DNA with low electron impact energies, which provides nucleobase contrast mechanisms without organometallic labels. Furthermore, the micron-size field of view when combined with imaging on the fly provides long read lengths, thereby reducing the demand on assembling the sequence. Experimental results from bulk specimens with immobilized single-base oligonucleotides demonstrate that base specific contrast is available with reflected, photo-emitted, and Auger electrons. Image contrast simulations of model rectangular features mimicking the individual nucleotides in a DNA strand have been developed to translate measurements of contrast on bulk DNA to the detectability of individual DNA bases in a sequence. Copyright © 2014 Elsevier B.V. All rights reserved.

A novel low energy electron microscope for DNA sequencing and surface analysis

DOE PAGES

Mankos, M.; Shadman, K.; Persson, H. H. J.; ...

2014-01-31

Monochromatic, aberration-corrected, dual-beam low energy electron microscopy (MAD-LEEM) is a novel technique that is directed towards imaging nanostructures and surfaces with sub-nanometer resolution. The technique combines a monochromator, a mirror aberration corrector, an energy filter, and dual beam illumination in a single instrument. The monochromator reduces the energy spread of the illuminating electron beam, which significantly improves spectroscopic and spatial resolution. Simulation results predict that the novel aberration corrector design will eliminate the second rank chromatic and third and fifth order spherical aberrations, thereby improving the resolution into the sub-nanometer regime at landing energies as low as one hundred electron-Volts.more » The energy filter produces a beam that can extract detailed information about the chemical composition and local electronic states of non-periodic objects such as nanoparticles, interfaces, defects, and macromolecules. The dual flood illumination eliminates charging effects that are generated when a conventional LEEM is used to image insulating specimens. A potential application for MAD-LEEM is in DNA sequencing, which requires high resolution to distinguish the individual bases and high speed to reduce the cost. The MAD-LEEM approach images the DNA with low electron impact energies, which provides nucleobase contrast mechanisms without organometallic labels. Furthermore, the micron-size field of view when combined with imaging on the fly provides long read lengths, thereby reducing the demand on assembling the sequence. Finally, experimental results from bulk specimens with immobilized single-base oligonucleotides demonstrate that base specific contrast is available with reflected, photo-emitted, and Auger electrons. Image contrast simulations of model rectangular features mimicking the individual nucleotides in a DNA strand have been developed to translate measurements of contrast on bulk DNA to the detectability of individual DNA bases in a sequence.« less

A conjugated microporous polymer based visual sensing platform for aminoglycoside antibiotics in water.

PubMed

Bhunia, Subhajit; Dey, Nilanjan; Pradhan, Anirban; Bhattacharya, Santanu

2018-06-20

A donor-acceptor based conjugated microporous polymer, PER@NiP-CMOP-1, has been synthesized which can achieve highly sensitive stereo-specific "Turn ON" biosensing of an aminoglycoside up to the ppb level. The coordination-driven inhibition of photo-induced electron transfer (d-PET) for d-electrons and the rotational freezing are the key factors for the recovery of the emission.

HAADF-STEM atom counting in atom probe tomography specimens: Towards quantitative correlative microscopy.

PubMed

Lefebvre, W; Hernandez-Maldonado, D; Moyon, F; Cuvilly, F; Vaudolon, C; Shinde, D; Vurpillot, F

2015-12-01

The geometry of atom probe tomography tips strongly differs from standard scanning transmission electron microscopy foils. Whereas the later are rather flat and thin (<20 nm), tips display a curved surface and a significantly larger thickness. As far as a correlative approach aims at analysing the same specimen by both techniques, it is mandatory to explore the limits and advantages imposed by the particular geometry of atom probe tomography specimens. Based on simulations (electron probe propagation and image simulations), the possibility to apply quantitative high angle annular dark field scanning transmission electron microscopy to of atom probe tomography specimens has been tested. The influence of electron probe convergence and the benefice of deconvolution of electron probe point spread function electron have been established. Atom counting in atom probe tomography specimens is for the first time reported in this present work. It is demonstrated that, based on single projections of high angle annular dark field imaging, significant quantitative information can be used as additional input for refining the data obtained by correlative analysis of the specimen in APT, therefore opening new perspectives in the field of atomic scale tomography. Copyright © 2015 Elsevier B.V. All rights reserved.

Experimental observation of multiphoton Thomson scattering

NASA Astrophysics Data System (ADS)

Yan, Wenchao; Golovin, Grigory; Fruhling, Colton; Haden, Daniel; Zhang, Ping; Zhang, Jun; Zhao, Baozhen; Liu, Cheng; Chen, Shouyuan; Banerjee, Sudeep; Umstadter, Donald

2016-10-01

With the advent of high-power lasers, several multiphoton processes have been reported involving electrons in strong fields. For electrons that were initially bound to atoms, both multiphoton ionization and scattering have been reported. However, for free electrons, only low-order harmonic generation has been observed until now. This limitation stems from past difficulty in achieving the required ultra-high-field strengths in scattering experiments. Highly relativistic laser intensities are required to reach the multiphoton regime of Thomson scattering, and generate high harmonics from free electrons. The scaling parameter is the normalized vector potential (a0). Previous experiments have observed phenomena in the weakly relativistic case (a0 >> 1). In ultra-intense fields (a0 >>1), the anomalous electron trajectory is predicted to produce a spectrum characterized by the merging of multiple high-order harmonic generation into a continuum. This may be viewed as the multiphoton Thomson scattering regime analogous to the wiggler of a synchrotron. Thus, the light produced reflects the electrons behavior in an ultra-intense lase field. We discuss the first experiments in the highly relativistic case (a0 15). This material is based upon work supported by NSF No. PHY-153700; US DOE, Office of Science, BES, # DE-FG02-05ER15663; AFOSR # FA9550-11-1-0157; and DHS DNDO # HSHQDC-13-C-B0036.

Fabrication of bright and thin Zn₂SiO₄ luminescent film for electron beam excitation-assisted optical microscope.

PubMed

Furukawa, Taichi; Kanamori, Satoshi; Fukuta, Masahiro; Nawa, Yasunori; Kominami, Hiroko; Nakanishi, Yoichiro; Sugita, Atsushi; Inami, Wataru; Kawata, Yoshimasa

2015-07-13

We fabricated a bright and thin Zn₂SiO₄ luminescent film to serve as a nanometric light source for high-spatial-resolution optical microscopy based on electron beam excitation. The Zn₂SiO₄ luminescent thin film was fabricated by annealing a ZnO film on a Si₃N₄ substrate at 1000 °C in N₂. The annealed film emitted bright cathodoluminescence compared with the as-deposited film. The film is promising for nano-imaging with electron beam excitation-assisted optical microscopy. We evaluated the spatial resolution of a microscope developed using this Zn₂SiO₄ luminescent thin film. This is the first report of the investigation and application of ZnO/Si₃N₄ annealed at a high temperature (1000 °C). The fabricated Zn₂SiO₄ film is expected to enable high-frame-rate dynamic observation with ultra-high resolution using our electron beam excitation-assisted optical microscopy.

Highly efficient on-chip direct electronic-plasmonic transducers

NASA Astrophysics Data System (ADS)

Du, Wei; Wang, Tao; Chu, Hong-Son; Nijhuis, Christian A.

2017-10-01

Photonic elements can carry information with a capacity exceeding 1,000 times that of electronic components, but, due to the optical diffraction limit, these elements are large and difficult to integrate with modern-day nanoelectronics or upcoming packages, such as three-dimensional integrated circuits or stacked high-bandwidth memories1-3. Surface plasmon polaritons can be confined to subwavelength dimensions and can carry information at high speeds (>100 THz)4-6. To combine the small dimensions of nanoelectronics with the fast operating speed of optics via plasmonics, on-chip electronic-plasmonic transducers that directly convert electrical signals into plasmonic signals (and vice versa) are required. Here, we report electronic-plasmonic transducers based on metal-insulator-metal tunnel junctions coupled to plasmonic waveguides with high-efficiency on-chip generation, manipulation and readout of plasmons. These junctions can be readily integrated into existing technologies, and we thus believe that they are promising for applications in on-chip integrated plasmonic circuits.

Combinatorial and High Throughput Discovery of High Temperature Piezoelectric Ceramics

DTIC Science & Technology

2011-10-10

the known candidate piezoelectric ferroelectric perovskites. Unlike most computational studies on crystal chemistry, where the starting point is some...studies on crystal chemistry, where the starting point is some form of electronic structure calculation, we use a data driven approach to initiate our...experimental measurements reported in the literature. Given that our models are based solely on crystal and electronic structure data and did not

Impact of electron-captures on nuclei near N = 50 on core-collapse supernovae

NASA Astrophysics Data System (ADS)

Titus, R.; Sullivan, C.; Zegers, R. G. T.; Brown, B. A.; Gao, B.

2018-01-01

The sensitivity of the late stages of stellar core collapse to electron-capture rates on nuclei is investigated, with a focus on electron-capture rates on 74 nuclei with neutron number close to 50, just above doubly magic 78Ni. It is demonstrated that variations in key characteristics of the evolution, such as the lepton fraction, electron fraction, entropy, stellar density, and in-fall velocity are about 50% due to uncertainties in the electron-capture rates on nuclei in this region, although thousands of nuclei are included in the simulations. The present electron-capture rate estimates used for the nuclei in this high-sensitivity region of the chart of isotopes are primarily based on a simple approximation, and it is shown that the estimated rates are likely too high, by an order of magnitude or more. Electron-capture rates based on Gamow-Teller strength distributions calculated in microscopic theoretical models will be required to obtain better estimates. Gamow-Teller distributions extracted from charge-exchange experiments performed at intermediate energies serve to guide the development and benchmark the models. A previously compiled weak-rate library that is used in the astrophysical simulations was updated as part of the work presented here, by adding additional rate tables for nuclei near stability for mass numbers between 60 and 110.

Development of a SEM-based low-energy in-line electron holography microscope for individual particle imaging.

PubMed

Adaniya, Hidehito; Cheung, Martin; Cassidy, Cathal; Yamashita, Masao; Shintake, Tsumoru

2018-05-01

A new SEM-based in-line electron holography microscope has been under development. The microscope utilizes conventional SEM and BF-STEM functionality to allow for rapid searching of the specimen of interest, seamless interchange between SEM, BF-STEM and holographic imaging modes, and makes use of coherent low-energy in-line electron holography to obtain low-dose, high-contrast images of light element materials. We report here an overview of the instrumentation and first experimental results on gold nano-particles and carbon nano-fibers for system performance tests. Reconstructed images obtained from the holographic imaging mode of the new microscope show substantial image contrast and resolution compared to those acquired by SEM and BF-STEM modes, demonstrating the feasibility of high-contrast imaging via low-energy in-line electron holography. The prospect of utilizing the new microscope to image purified biological specimens at the individual particle level is discussed and electron optical issues and challenges to further improve resolution and contrast are considered. Copyright © 2018 Elsevier B.V. All rights reserved.

Seeing tobacco mosaic virus through direct electron detectors

PubMed Central

Fromm, Simon A.; Bharat, Tanmay A.M.; Jakobi, Arjen J.; Hagen, Wim J.H.; Sachse, Carsten

2015-01-01

With the introduction of direct electron detectors (DED) to the field of electron cryo-microscopy, a wave of atomic-resolution structures has become available. As the new detectors still require comparative characterization, we have used tobacco mosaic virus (TMV) as a test specimen to study the quality of 3D image reconstructions from data recorded on the two direct electron detector cameras, K2 Summit and Falcon II. Using DED movie frames, we explored related image-processing aspects and compared the performance of micrograph-based and segment-based motion correction approaches. In addition, we investigated the effect of dose deposition on the atomic-resolution structure of TMV and show that radiation damage affects negative carboxyl chains first in a side-chain specific manner. Finally, using 450,000 asymmetric units and limiting the effects of radiation damage, we determined a high-resolution cryo-EM map at 3.35 Å resolution. Here, we provide a comparative case study of highly ordered TMV recorded on different direct electron detectors to establish recording and processing conditions that enable structure determination up to 3.2 Å in resolution using cryo-EM. PMID:25528571

Graphene/MoS2 hybrid technology for large-scale two-dimensional electronics.

PubMed

Yu, Lili; Lee, Yi-Hsien; Ling, Xi; Santos, Elton J G; Shin, Yong Cheol; Lin, Yuxuan; Dubey, Madan; Kaxiras, Efthimios; Kong, Jing; Wang, Han; Palacios, Tomás

2014-06-11

Two-dimensional (2D) materials have generated great interest in the past few years as a new toolbox for electronics. This family of materials includes, among others, metallic graphene, semiconducting transition metal dichalcogenides (such as MoS2), and insulating boron nitride. These materials and their heterostructures offer excellent mechanical flexibility, optical transparency, and favorable transport properties for realizing electronic, sensing, and optical systems on arbitrary surfaces. In this paper, we demonstrate a novel technology for constructing large-scale electronic systems based on graphene/molybdenum disulfide (MoS2) heterostructures grown by chemical vapor deposition. We have fabricated high-performance devices and circuits based on this heterostructure, where MoS2 is used as the transistor channel and graphene as contact electrodes and circuit interconnects. We provide a systematic comparison of the graphene/MoS2 heterojunction contact to more traditional MoS2-metal junctions, as well as a theoretical investigation, using density functional theory, of the origin of the Schottky barrier height. The tunability of the graphene work function with electrostatic doping significantly improves the ohmic contact to MoS2. These high-performance large-scale devices and circuits based on this 2D heterostructure pave the way for practical flexible transparent electronics.

Quantitative strain and compositional studies of InxGa1-xAs Epilayer in a GaAs-based pHEMT device structure by TEM techniques.

PubMed

Sridhara Rao, Duggi V; Sankarasubramanian, Ramachandran; Muraleedharan, Kuttanellore; Mehrtens, Thorsten; Rosenauer, Andreas; Banerjee, Dipankar

2014-08-01

In GaAs-based pseudomorphic high-electron mobility transistor device structures, strain and composition of the In x Ga1-x As channel layer are very important as they influence the electronic properties of these devices. In this context, transmission electron microscopy techniques such as (002) dark-field imaging, high-resolution transmission electron microscopy (HRTEM) imaging, scanning transmission electron microscopy-high angle annular dark field (STEM-HAADF) imaging and selected area diffraction, are useful. A quantitative comparative study using these techniques is relevant for assessing the merits and limitations of the respective techniques. In this article, we have investigated strain and composition of the In x Ga1-x As layer with the mentioned techniques and compared the results. The HRTEM images were investigated with strain state analysis. The indium content in this layer was quantified by HAADF imaging and correlated with STEM simulations. The studies showed that the In x Ga1-x As channel layer was pseudomorphically grown leading to tetragonal strain along the [001] growth direction and that the average indium content (x) in the epilayer is ~0.12. We found consistency in the results obtained using various methods of analysis.

Electronically commutated dc motors for electric vehicles

NASA Technical Reports Server (NTRS)

Maslowski, E. A.

1981-01-01

A motor development program to explore the feasibility of electronically commutated dc motors (also known as brushless) for electric cars is described. Two different design concepts and a number of design variations based on these concepts are discussed. One design concept is based on a permanent magnet, medium speed, machine rated at 7000 to 9000 rpm, and powered via a transistor inverter power conditioner. The other concept is based on a permanent magnet, high speed, machine rated at 22,000 to 26,000 rpm, and powered via a thyristor inverter power conditioner. Test results are presented for a medium speed motor and a high speed motor each of which have been fabricated using samarium cobalt permanent magnet material.

Riometer based Neural Network Prediction of Kp

NASA Astrophysics Data System (ADS)

Arnason, K. M.; Spanswick, E.; Chaddock, D.; Tabrizi, A. F.; Behjat, L.

2017-12-01

The Canadian Geospace Observatory Riometer Array is a network of 11 wide-beam riometers deployed across Central and Northern Canada. The geographic coverage of the network affords a near continent scale view of high energy (>30keV) electron precipitation at a very course spatial resolution. In this paper we present the first results from a neural network based analysis of riometer data. Trained on decades of riometer data, the neural network is tuned to predict a simple index of global geomagnetic activity (Kp) based solely on the information provided by the high energy electron precipitation over Canada. We present results from various configurations of training and discuss the applicability of this technique for short term prediction of geomagnetic activity.

Sensitivity of energy-packed compounds based on superfine and nanoporous silicon to pulsed electrical treatments

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zegrya, G. G.; Savenkov, G. G.; Morozov, V. A.

2017-04-15

The sensitivity of an energy-packed compound based on nanoporous silicon and calcium perchlorate to a high-current electron beam is studied. The initiation of explosive transformations in a mixture of potassium picrate with a highly dispersed powder of boron-doped silicon by means of a high-voltage discharge is examined. It is shown that explosive transformation modes (combustion and explosion) appear in the energy-packed compound under study upon its treatment with an electron beam. A relationship is established between the explosive transformation modes and the density of the energy-packed compound and between the breakdown (initiation) voltage and the mass fraction of the siliconmore » powder.« less

A Comparative Study of Spectral Auroral Intensity Predictions From Multiple Electron Transport Models

NASA Astrophysics Data System (ADS)

Grubbs, Guy; Michell, Robert; Samara, Marilia; Hampton, Donald; Hecht, James; Solomon, Stanley; Jahn, Jorg-Micha

2018-01-01

It is important to routinely examine and update models used to predict auroral emissions resulting from precipitating electrons in Earth's magnetotail. These models are commonly used to invert spectral auroral ground-based images to infer characteristics about incident electron populations when in situ measurements are unavailable. In this work, we examine and compare auroral emission intensities predicted by three commonly used electron transport models using varying electron population characteristics. We then compare model predictions to same-volume in situ electron measurements and ground-based imaging to qualitatively examine modeling prediction error. Initial comparisons showed differences in predictions by the GLobal airglOW (GLOW) model and the other transport models examined. Chemical reaction rates and radiative rates in GLOW were updated using recent publications, and predictions showed better agreement with the other models and the same-volume data, stressing that these rates are important to consider when modeling auroral processes. Predictions by each model exhibit similar behavior for varying atmospheric constants, energies, and energy fluxes. Same-volume electron data and images are highly correlated with predictions by each model, showing that these models can be used to accurately derive electron characteristics and ionospheric parameters based solely on multispectral optical imaging data.

Characterizing the response of a scintillator-based detector to single electrons.

PubMed

Sang, Xiahan; LeBeau, James M

2016-02-01

Here we report the response of a high angle annular dark field scintillator-based detector to single electrons. We demonstrate that care must be taken when determining the single electron intensity as significant discrepancies can occur when quantifying STEM images with different methods. To account for the detector response, we first image the detector using very low beam currents (∼8fA), and subsequently model the interval between consecutive single electrons events. We find that single electrons striking the detector present a wide distribution of intensities, which we show is not described by a simple function. Further, we present a method to accurately account for the electrons within the incident probe when conducting quantitative imaging. The role detector settings play on determining the single electron intensity is also explored. Finally, we extend our analysis to describe the response of the detector to multiple electron events within the dwell interval of each pixel. Copyright © 2015 Elsevier B.V. All rights reserved.

Gate-Defined Quantum Confinement in InSe-based van der Waals Heterostructures.

PubMed

Hamer, Matthew J; Tóvári, Endre; Zhu, Mengjian; Thompson, Michael Dermot; Mayorov, Alexander S; Prance, Jonathan; Lee, Yongjin; Haley, Richard; Kudrynskyi, Zakhar R; Patanè, Amalia; Terry, Daniel; Kovalyuk, Zakhar D; Ensslin, Klaus; Kretinin, Andrey V; Geim, Andre K; Gorbachev, Roman Vladislavovich

2018-05-15

Indium selenide, a post-transition metal chalcogenide, is a novel two-dimensional (2D) semiconductor with interesting electronic properties. Its tunable band gap and high electron mobility have already attracted considerable research interest. Here we demonstrate strong quantum confinement and manipulation of single electrons in devices made from few-layer crystals of InSe using electrostatic gating. We report on gate-controlled quantum dots in the Coulomb blockade regime as well as one-dimensional quantization in point contacts, revealing multiple plateaus. The work represents an important milestone in the development of quality devices based on 2D materials and makes InSe a prime candidate for relevant electronic and optoelectronic applications.

Spatio-temporal analysis of the electron power absorption in electropositive capacitive RF plasmas based on moments of the Boltzmann equation

NASA Astrophysics Data System (ADS)

Schulze, J.; Donkó, Z.; Lafleur, T.; Wilczek, S.; Brinkmann, R. P.

2018-05-01

Power absorption by electrons from the space- and time-dependent electric field represents the basic sustaining mechanism of all radio-frequency driven plasmas. This complex phenomenon has attracted significant attention. However, most theories and models are, so far, only able to account for part of the relevant mechanisms. The aim of this work is to present an in-depth analysis of the power absorption by electrons, via the use of a moment analysis of the Boltzmann equation without any ad-hoc assumptions. This analysis, for which the input quantities are taken from kinetic, particle based simulations, allows the identification of all physical mechanisms involved and an accurate quantification of their contributions. The perfect agreement between the sum of these contributions and the simulation results verifies the completeness of the model. We study the relative importance of these mechanisms as a function of pressure, with high spatial and temporal resolution, in an electropositive argon discharge. In contrast to some widely accepted previous models we find that high space- and time-dependent ambipolar electric fields outside the sheaths play a key role for electron power absorption. This ambipolar field is time-dependent within the RF period and temporally asymmetric, i.e., the sheath expansion is not a ‘mirror image’ of the sheath collapse. We demonstrate that this time-dependence is mainly caused by a time modulation of the electron temperature resulting from the energy transfer to electrons by the ambipolar field itself during sheath expansion. We provide a theoretical proof that this ambipolar electron power absorption would vanish completely, if the electron temperature was constant in time. This mechanism of electron power absorption is based on a time modulated electron temperature, markedly different from the Hard Wall Model, of key importance for energy transfer to electrons on time average and, thus, essential for the generation of capacitively coupled plasmas.

Analyzing indirect secondary electron contrast of unstained bacteriophage T4 based on SEM images and Monte Carlo simulations

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ogura, Toshihiko, E-mail: t-ogura@aist.go.jp

2009-03-06

The indirect secondary electron contrast (ISEC) condition of the scanning electron microscopy (SEM) produces high contrast detection with minimal damage of unstained biological samples mounted under a thin carbon film. The high contrast image is created by a secondary electron signal produced under the carbon film by a low acceleration voltage. Here, we show that ISEC condition is clearly able to detect unstained bacteriophage T4 under a thin carbon film (10-15 nm) by using high-resolution field emission (FE) SEM. The results show that FE-SEM provides higher resolution than thermionic emission SEM. Furthermore, we investigated the scattered electron area within themore » carbon film under ISEC conditions using Monte Carlo simulation. The simulations indicated that the image resolution difference is related to the scattering width in the carbon film and the electron beam spot size. Using ISEC conditions on unstained virus samples would produce low electronic damage, because the electron beam does not directly irradiate the sample. In addition to the routine analysis, this method can be utilized for structural analysis of various biological samples like viruses, bacteria, and protein complexes.« less

Atmospheric Electron-Induced X-Ray Spectrometer (AEXS) Development

NASA Technical Reports Server (NTRS)

Wilcox, Jaroslava Z.; Urgiles, Eduardo; Toda, Risaku; George, Thomas; Douglas, Susanne; Crisp, Joy

2005-01-01

This paper describes the progress in the development of the so-called Atmospheric Electron X-ray Spectrometer (AEXS) instrument in our laboratory at JPL. The AEXS is a novel miniature instrument concept based on the excitation of characteristic X-Ray Fluorescence (XRF) and luminescence spectra using a focused electron beam, for non-destructive evaluation of surfaces of samples in situ, in planetary ambient atmosphere. In situ operation is obtained through the use of a thin electron transmissive membrane to isolate the vacuum within the AEXS electron source from the outside ambient atmosphere. By using a focused electron beam, the impinging electrons on samples in the external atmosphere excite XRF spectra from the irradiated spots with high-to-medium spatial resolution. The XRF spectra are analyzed using an energy-dispersive detector to determine surface elemental composition. The use of high- intensity electron beam results in rapid spectrum acquisition (several minutes), and consequently low energy consumption (several tens of Joules) per acquired XRF spectrum in comparison to similar portable instruments.

Influence of polymer dielectrics on C60-based field-effect transistors

NASA Astrophysics Data System (ADS)

Zhou, Jianlin; Zhang, Fujia; Lan, Lifeng; Wen, Shangsheng; Peng, Junbiao

2007-12-01

Fullerene C60 organic field-effect transistors (OFETs) have been fabricated based on two different polymer dielectric materials, poly(methylmethacrylate) (PMMA) and cross-linkable poly(4-vinylphenol). The large grain size of C60 film and small number of traps at the interface of PMMA /C60 were obtained with high electron mobility of 0.66cm2/Vs in the PMMA transistor. The result suggests that the C60 semiconductor cooperating with polymer dielectric is a promising application in the fabrication of n-type organic transistors because of low threshold voltage and high electron mobility.

Al7CX (X=Li-Cs) clusters: Stability and the prospect for cluster materials

NASA Astrophysics Data System (ADS)

Ashman, C.; Khanna, S. N.; Pederson, M. R.; Kortus, J.

2000-12-01

Al7C clusters, recently found to have a high-electron affinity and exceptional stability, are shown to form ionic molecules when combined with alkali-metal atoms. Our studies, based on an ab initio gradient-corrected density-functional scheme, show that Al7CX (X=Li-Cs) clusters have a very low-electron affinity and a high-ionization potential. When combined, the two- and four-atom composite clusters of Al7CLi units leave the Al7C clusters almost intact. Preliminary studies indicate that Al7CLi may be suitable to form cluster-based materials.

Theory of High-T{sub c} Superconducting Cuprates Based on Experimental Evidence

DOE R&D Accomplishments Database

Abrikosov, A. A.

1999-12-10

A model of superconductivity in layered high-temperature superconducting cuprates is proposed, based on the extended saddle point singularities in the electron spectrum, weak screening of the Coulomb interaction and phonon-mediated interaction between electrons plus a small short-range repulsion of Hund's, or spin-fluctuation, origin. This permits to explain the large values of T{sub c}, features of the isotope effect on oxygen and copper, the existence of two types of the order parameter, the peak in the inelastic neutron scattering, the positive curvature of the upper critical field, as function of temperature etc.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cui, Nan; Tong, Yanhong; Tang, Qingxin, E-mail: tangqx@nenu.edu.cn, E-mail: ycliu@nenu.edu.cn

We showed the advantages of flexible rubrene organic single-crystal microbelts in high-performance devices and circuits towards conformal electronics. The anisotropic transport based on the only one organic microbelt was studied by a “cross-channel” method, and the rubrene microbelt showed the highest mobility up to 26 cm{sup 2}/V s in the length direction. Based on an individual rubrene microbelt, the organic single-crystal circuit with good adherence on a pearl ball and the gain as high as 18 was realized. These results present great potential for applications of organic single-crystal belts in the next-generation conformal electronics.

A flange on electron spectromicroscope with spherical deflector analyzer--simultaneous imaging of reciprocal and real spaces.

PubMed

Grzelakowski, Krzysztof P

2013-07-01

An instrumental realization of the idea for the electron emission spectromicroscope based on the newly developed imaging energy filter called α-SDA (Spherical Deflector Analyzer) is reported. Its compact design enables the realization of the flange-on spectromicroscope concept. It is equipped with two independent energy selective imaging channels: one for real and another for reciprocal space visualization. These images can be acquired quasi-simultaneousely by means of the software based on the switching on and off potentials of the energy filter. An electron gun located inside the immersion objective lens allows a new kind of sample illumination by high energy primary electrons and thus, opens a new application field for electron spectromicroscopy under laboratory conditions. Copyright © 2013 Elsevier B.V. All rights reserved.

High-voltage testing of a 500-kV dc photocathode electron gun.

PubMed

Nagai, Ryoji; Hajima, Ryoichi; Nishimori, Nobuyuki; Muto, Toshiya; Yamamoto, Masahiro; Honda, Yosuke; Miyajima, Tsukasa; Iijima, Hokuto; Kuriki, Masao; Kuwahara, Makoto; Okumi, Shoji; Nakanishi, Tsutomu

2010-03-01

A high-voltage dc photocathode electron gun was successfully conditioned up to a voltage of 550 kV and a long-time holding test for 8 h was demonstrated at an acceleration voltage of 500 kV. The dc photocathode electron gun is designed for future light sources based on energy-recovery linac and consists of a Cockcroft-Walton generator, a segmented cylindrical ceramic insulator, guard-ring electrodes, a support-rod electrode, a vacuum chamber, and a pressurized insulating gas tank. The segmented cylindrical ceramic insulator and the guard-ring electrodes were utilized to prevent any damage to the insulator from electrons emitted by the support-rod electrode.

Injection of auxiliary electrons for increasing the plasma density in highly charged and high intensity ion sources.

PubMed

Odorici, F; Malferrari, L; Montanari, A; Rizzoli, R; Mascali, D; Castro, G; Celona, L; Gammino, S; Neri, L

2016-02-01

Different electron guns based on cold- or hot-cathode technologies have been developed since 2009 at INFN for operating within ECR plasma chambers as sources of auxiliary electrons, with the aim of boosting the source performances by means of a higher plasma lifetime and density. Their application to microwave discharge ion sources, where plasma is not confined, has required an improvement of the gun design, in order to "screen" the cathode from the plasma particles. Experimental tests carried out on a plasma reactor show a boost of the plasma density, ranging from 10% to 90% when the electron guns are used, as explained by plasma diffusion models.

Electronic Rearrangement in Molecular Plasmons: An Electron Density and Electrostatic Potential-Based Study.

PubMed

Paul, Mishu; Balanarayan, P

2018-06-05

Plasmonic modes in single-molecule systems have been previously identified by scaling two-electron interactions in calculating excitation energies. Analysis of transition dipole moments for states of polyacenes based on configuration interaction is another method for characterising molecular plasmons. The principal features in the electronic absorption spectra of polyacenes are a low-intensity, lower-in-energy peak and a high-intensity, higher-in-energy peak. From calculations using time-dependent density functional theory with the B3LYP/cc-pVTZ basis set, both these peaks are found to result from the same set of electronic transitions, that is, HOMO-n to LUMO and HOMO to LUMO+n, where n varies as the number of fused rings increases. In this work, the excited states of polyacenes, naphthalene through pentacene, are analysed using electron densities and molecular electrostatic potential (MESP) topography. Compared to other excited states the bright and dark plasmonic states involve the least electron rearrangement. Quantitatively, the MESP topography indicates that the variance in MESP values and the displacement in MESP minima positions, calculated with respect to the ground state, are lowest for plasmonic states. The excited-state electronic density profiles and electrostatic potential topographies suggest the least electron rearrangement for the plasmonic states. Conversely, high electron rearrangement characterises a single-particle excitation. The molecular plasmon can be called an excited state most similar to the ground state in terms of one-electron properties. This is found to be true for silver (Ag 6 ) and sodium (Na 8 ) linear chains as well. © 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Electron Mobility in γ -Al2O3/SrTiO3

NASA Astrophysics Data System (ADS)

Christensen, D. V.; Frenkel, Y.; Schütz, P.; Trier, F.; Wissberg, S.; Claessen, R.; Kalisky, B.; Smith, A.; Chen, Y. Z.; Pryds, N.

2018-05-01

One of the key issues in engineering oxide interfaces for electronic devices is achieving high electron mobility. SrTiO3 -based interfaces with high electron mobility have gained a lot of interest due to the possibility of combining quantum phenomena with the many functionalities exhibited by SrTiO3 . To date, the highest electron mobility (140 000 cm2/V s at 2 K) is obtained by interfacing perovskite SrTiO3 with spinel γ -Al2O3 . The origin of the high mobility, however, remains poorly understood. Here, we investigate the scattering mechanisms limiting the mobility in γ -Al2O3/SrTiO3 at temperatures between 2 and 300 K and over a wide range of sheet carrier densities. For T >150 K , we find that the mobility is limited by longitudinal optical phonon scattering. For large sheet carrier densities (>8 ×1013 cm-2 ), the screened electron-phonon coupling leads to room-temperature mobilities up to μ ˜12 cm2/V s . For 5 K

Ionization of NO at high temperature

NASA Technical Reports Server (NTRS)

Hansen, C. Frederick

1991-01-01

Space vehicles flying through the atmosphere at high speed are known to excite a complex set of chemical reactions in the atmospheric gases, ranging from simple vibrational excitation to dissociation, atom exchange, electronic excitation, ionization, and charge exchange. Simple arguments are developed for the temperature dependence of the reactions leading to ionization of NO, including the effect of vibrational electronic thermal nonequilibrium. NO ionization is the most important source of electrons at intermediate temperatures and at higher temperatures provides the trigger electrons that ionize atoms. Based on these arguments, recommendations are made for formulae which fit observed experimental results, and which include a dependence on both a heavy particle temperature and different vibration electron temperatures. In addition, these expressions will presumably provide the most reliable extrapolation of experimental results to much higher temperatures.

Readout electronics for the GEM detector

NASA Astrophysics Data System (ADS)

Kasprowicz, G.; Czarski, T.; Chernyshova, M.; Czyrkowski, H.; Dabrowski, R.; Dominik, W.; Jakubowska, K.; Karpinski, L.; Kierzkowski, K.; Kudla, I. M.; Pozniak, K.; Rzadkiewicz, J.; Salapa, Z.; Scholz, M.; Zabolotny, W.

2011-10-01

A novel approach to the Gas Electron Multiplier (GEM) detector readout is presented. Unlike commonly used methods, based on discriminators[2],[3] and analogue FIFOs[1], the method developed uses simultaneously sampling high speed ADCs and advanced FPGA-based processing logic to estimate the energy of every single photon. Such method is applied to every GEM strip signal. It is especially useful in case of crystal-based spectrometers for soft X-rays, where higher order reflections need to be identified and rejected[5].

Emerging GaN-based HEMTs for mechanical sensing within harsh environments

NASA Astrophysics Data System (ADS)

Köck, Helmut; Chapin, Caitlin A.; Ostermaier, Clemens; Häberlen, Oliver; Senesky, Debbie G.

2014-06-01

Gallium nitride based high-electron-mobility transistors (HEMTs) have been investigated extensively as an alternative to Si-based power transistors by academia and industry over the last decade. It is well known that GaN-based HEMTs outperform Si-based technologies in terms of power density, area specific on-state resistance and switching speed. Recently, wide band-gap material systems have stirred interest regarding their use in various sensing fields ranging from chemical, mechanical, biological to optical applications due to their superior material properties. For harsh environments, wide bandgap sensor systems are deemed to be superior when compared to conventional Si-based systems. A new monolithic sensor platform based on the GaN HEMT electronic structure will enable engineers to design highly efficient propulsion systems widely applicable to the automotive, aeronautics and astronautics industrial sectors. In this paper, the advancements of GaN-based HEMTs for mechanical sensing applications are discussed. Of particular interest are multilayered heterogeneous structures where spontaneous and piezoelectric polarization between the interface results in the formation of a 2-dimensional electron gas (2DEG). Experimental results presented focus on the signal transduction under strained operating conditions in harsh environments. It is shown that a conventional AlGaN/GaN HEMT has a strong dependence of drain current under strained conditions, thus representing a promising future sensor platform. Ultimately, this work explores the sensor performance of conventional GaN HEMTs and leverages existing technological advances available in power electronics device research. The results presented have the potential to boost GaN-based sensor development through the integration of HEMT device and sensor design research.

Analysis of thermoelectric properties of high-temperature complex alloys of nickel-base, iron-base and cobalt-base groups

NASA Technical Reports Server (NTRS)

Holanda, R.

1984-01-01

The thermoelectric properties alloys of the nickel-base, iron-base, and cobalt-base groups containing from 1% to 25% 106 chromium were compared and correlated with the following material characteristics: atomic percent of the principle alloy constituent; ratio of concentration of two constituents; alloy physical property (electrical resistivity); alloy phase structure (percent precipitate or percent hardener content); alloy electronic structure (electron concentration). For solid-solution-type alloys the most consistent correlation was obtained with electron concentration, for precipitation-hardenable alloys of the nickel-base superalloy group, the thermoelectric potential correlated with hardener content in the alloy structure. For solid-solution-type alloys, no problems were found with thermoelectric stability to 1000; for precipitation-hardenable alloys, thermoelectric stability was dependent on phase stability. The effects of the compositional range of alloy constituents on temperature measurement uncertainty are discussed.

Molecular helices as electron acceptors in high-performance bulk heterojunction solar cells

DOE PAGES

Yu M. Zhong; Nam, Chang -Yong; Trinh, M. Tuan; ...

2015-09-18

Despite numerous organic semiconducting materials synthesized for organic photovoltaics in the past decade, fullerenes are widely used as electron acceptors in highly efficient bulk-heterojunction solar cells. None of the non-fullerene bulk heterojunction solar cells have achieved efficiencies as high as fullerene-based solar cells. Design principles for fullerene-free acceptors remain unclear in the field. Here we report examples of helical molecular semiconductors as electron acceptors that are on par with fullerene derivatives in efficient solar cells. We achieved an 8.3% power conversion efficiency in a solar cell, which is a record high for non-fullerene bulk heterojunctions. Femtosecond transient absorption spectroscopy revealedmore » both electron and hole transfer processes at the donor–acceptor interfaces. Atomic force microscopy reveals a mesh-like network of acceptors with pores that are tens of nanometres in diameter for efficient exciton separation and charge transport. As a result, this study describes a new motif for designing highly efficient acceptors for organic solar cells.« less

Molecular helices as electron acceptors in high-performance bulk heterojunction solar cells.

PubMed

Zhong, Yu; Trinh, M Tuan; Chen, Rongsheng; Purdum, Geoffrey E; Khlyabich, Petr P; Sezen, Melda; Oh, Seokjoon; Zhu, Haiming; Fowler, Brandon; Zhang, Boyuan; Wang, Wei; Nam, Chang-Yong; Sfeir, Matthew Y; Black, Charles T; Steigerwald, Michael L; Loo, Yueh-Lin; Ng, Fay; Zhu, X-Y; Nuckolls, Colin

2015-09-18

Despite numerous organic semiconducting materials synthesized for organic photovoltaics in the past decade, fullerenes are widely used as electron acceptors in highly efficient bulk-heterojunction solar cells. None of the non-fullerene bulk heterojunction solar cells have achieved efficiencies as high as fullerene-based solar cells. Design principles for fullerene-free acceptors remain unclear in the field. Here we report examples of helical molecular semiconductors as electron acceptors that are on par with fullerene derivatives in efficient solar cells. We achieved an 8.3% power conversion efficiency in a solar cell, which is a record high for non-fullerene bulk heterojunctions. Femtosecond transient absorption spectroscopy revealed both electron and hole transfer processes at the donor-acceptor interfaces. Atomic force microscopy reveals a mesh-like network of acceptors with pores that are tens of nanometres in diameter for efficient exciton separation and charge transport. This study describes a new motif for designing highly efficient acceptors for organic solar cells.

Design, synthesis, and structure-property relationships of isoindigo-based conjugated polymers.

PubMed

Lei, Ting; Wang, Jie-Yu; Pei, Jian

2014-04-15

Conjugated polymers have developed rapidly due to their promising applications in low-cost, lightweight, and flexible electronics. The development of the third-generation donor-acceptor (D-A) polymers greatly improved the device performance in organic solar cells (OSCs) and field-effect transistors (FETs). However, for further improvement of device performance, scientists need to develop new building blocks, in particular electron-deficient aromatics, and gain an in-depth understanding of the structure-property relationships. Recently, isoindigo has been used as a new acceptor of D-A conjugated polymers. An isomer of indigo, isoindigo is a less well-known dye and can be isolated as a by-product from certain biological processes. It has two lactam rings and exhibits strong electron-withdrawing character. This electron deficiency gives isoindigo-based polymers intriguing properties, such as broad absorption and high open circuit voltage in OSCs, as well as high mobility and good ambient stability in FETs. In this Account, we review our recent progress on the design, synthesis, and structure-property relationship study of isoindigo-based polymers for FETs. Starting with some discussion on carrier transport in polymer films, we provide some basic strategies towards high-performance polymer FETs. We discuss the stability issue of devices, the impediment of the alkyl side chains, and the choice of the donor part of conjugated polymers. We demonstrate that introducing the isoindigo core effectively lowers the HOMO levels of polymers and provides FETs with long-time stability. In addition, we have found that when we use inappropriate alkyl side chains or non-centrosymmetric donors, the device performance of isoindigo polymers suffers. To further improve device performance and ambient stability, we propose several design strategies, such as using farther branched alkyl chains, modulating polymer energy levels, and extending π-conjugated backbones. We have found that using farther branched alkyl chains can effectively decrease interchain π-π stacking distance and improve carrier mobility. When we introduce electron-deficient functional groups on the isoindigo core, the LUMO levels of the polymers markedly decrease, which significantly improves the electron mobility and device stability. In addition, we present a new polymer system called BDOPV, which is based on the concept of π-extended isoindigo. By application of some strategies successfully used in isoindigo-based polymers, BDOPV-based polymers exhibit high mobility and good stability both in n-type and in ambipolar FETs. We believe that a synergy of molecular engineering strategies towards the isoindigo core, donor units, and side chains may further improve the performance and broaden the application of isoindigo-based polymers.

Electromechanical Displacement Detection With an On-Chip High Electron Mobility Transistor Amplifier

NASA Astrophysics Data System (ADS)

Oda, Yasuhiko; Onomitsu, Koji; Kometani, Reo; Warisawa, Shin-ichi; Ishihara, Sunao; Yamaguchi, Hiroshi

2011-06-01

We developed a highly sensitive displacement detection scheme for a GaAs-based electromechanical resonator using an integrated high electron mobility transistor (HEMT). Piezoelectric voltage generated by the vibration of the resonator is applied to the gate of the HEMT, resulting in the on-chip amplification of the signal voltage. This detection scheme achieves a displacement sensitivity of ˜9 pm·Hz-1/2, which is one of the highest among on-chip purely electrical displacement detection schemes at room temperature.

Design and development of compact pulsed power driver for electron beam experiments

DOE Office of Scientific and Technical Information (OSTI.GOV)

Deb, Pankaj; Sharma, S.K.; Adhikary, B.

2014-07-01

Pulsed electron beam generation requires high power pulses of fast rise, short duration pulse with flat top. With this objective we have designed a low cost compact pulsed power driver based on water dielectric transmission line. The paper describes the design aspects and construction of the pulse power driver and its experimental results. The pulsed power driver consist of a capacitor bank and its charging power supply, high voltage generator, high voltage switch and pulse compression system. (author)

A wearable pressure sensor based on ultra-violet/ozone microstructured carbon nanotube/polydimethylsiloxane arrays for electronic skins.

PubMed

Yu, Guohui; Hu, Jingdong; Tan, Jianping; Gao, Yang; Lu, Yongfeng; Xuan, Fuzhen

2018-03-16

Pressure sensors with high performance (e.g., a broad pressure sensing range, high sensitivities, rapid response/relaxation speeds, temperature-stable sensing), as well as a cost-effective and highly efficient fabrication method are highly desired for electronic skins. In this research, a high-performance pressure sensor based on microstructured carbon nanotube/polydimethylsiloxane arrays was fabricated using an ultra-violet/ozone (UV/O 3 ) microengineering technique. The UV/O 3 microengineering technique is controllable, cost-effective, and highly efficient since it is conducted at room temperature in an ambient environment. The pressure sensor offers a broad pressure sensing range (7 Pa-50 kPa), a sensitivity of ∼ -0.101 ± 0.005 kPa -1 (<1 kPa), a fast response/relaxation speed of ∼10 ms, a small dependence on temperature variation, and a good cycling stability (>5000 cycles), which is attributed to the UV/O 3 engineered microstructures that amplify and transfer external applied forces and rapidly store/release the energy during the PDMS deformation. The sensors developed show the capability to detect external forces and monitor human health conditions, promising for the potential applications in electronic skin.

A wearable pressure sensor based on ultra-violet/ozone microstructured carbon nanotube/polydimethylsiloxane arrays for electronic skins

NASA Astrophysics Data System (ADS)

Yu, Guohui; Hu, Jingdong; Tan, Jianping; Gao, Yang; Lu, Yongfeng; Xuan, Fuzhen

2018-03-01

Pressure sensors with high performance (e.g., a broad pressure sensing range, high sensitivities, rapid response/relaxation speeds, temperature-stable sensing), as well as a cost-effective and highly efficient fabrication method are highly desired for electronic skins. In this research, a high-performance pressure sensor based on microstructured carbon nanotube/polydimethylsiloxane arrays was fabricated using an ultra-violet/ozone (UV/O3) microengineering technique. The UV/O3 microengineering technique is controllable, cost-effective, and highly efficient since it is conducted at room temperature in an ambient environment. The pressure sensor offers a broad pressure sensing range (7 Pa-50 kPa), a sensitivity of ˜ -0.101 ± 0.005 kPa-1 (<1 kPa), a fast response/relaxation speed of ˜10 ms, a small dependence on temperature variation, and a good cycling stability (>5000 cycles), which is attributed to the UV/O3 engineered microstructures that amplify and transfer external applied forces and rapidly store/release the energy during the PDMS deformation. The sensors developed show the capability to detect external forces and monitor human health conditions, promising for the potential applications in electronic skin.

Development of clinical contents model markup language for electronic health records.

PubMed

Yun, Ji-Hyun; Ahn, Sun-Ju; Kim, Yoon

2012-09-01

To develop dedicated markup language for clinical contents models (CCM) to facilitate the active use of CCM in electronic health record systems. Based on analysis of the structure and characteristics of CCM in the clinical domain, we designed extensible markup language (XML) based CCM markup language (CCML) schema manually. CCML faithfully reflects CCM in both the syntactic and semantic aspects. As this language is based on XML, it can be expressed and processed in computer systems and can be used in a technology-neutral way. CCML HAS THE FOLLOWING STRENGTHS: it is machine-readable and highly human-readable, it does not require a dedicated parser, and it can be applied for existing electronic health record systems.

Microgravity

NASA Image and Video Library

2004-04-15

Comparison of ground-based (left) and Skylab (right) electron beam welds in pure tantalum (Ta) (10X magnification). Residual votices left behind in the ground-based sample after the electron beam passed were frozen into the grain structure. These occurred because of the rapid cooling rate at the high temperature. Although the thermal characteristics and electron beam travel speeds were comparable for the skylab sample, the residual vortices were erased in the grain structure. This may have been due to the fact that final grain size of the solidified material was smaller in the Skylab sample compared to the ground-based sample. The Skylab sample was processed in the M512 Materials Processing Facility (MPF) during Skylab SL-2 Mission. Principal Investigator was Richard Poorman.

High agreement between the new Mongolian electronic immunization register and written immunization records: a health centre based audit

PubMed Central

Mungun, Tuya; Dorj, Narangerel; Volody, Baigal; Chuluundorj, Uranjargal; Munkhbat, Enkhtuya; Danzan, Gerelmaa; Nguyen, Cattram D; La Vincente, Sophie; Russell, Fiona

2017-01-01

Introduction Monitoring of vaccination coverage is vital for the prevention and control of vaccine-preventable diseases. Electronic immunization registers have been increasingly adopted to assist with the monitoring of vaccine coverage; however, there is limited literature about the use of electronic registers in low- and middle-income countries such as Mongolia. We aimed to determine the accuracy and completeness of the newly introduced electronic immunization register for calculating vaccination coverage and determining vaccine effectiveness within two districts in Mongolia in comparison to written health provider records. Methods We conducted a cross-sectional record review among children 2–23 months of age vaccinated at immunization clinics within the two districts. We linked data from written records with the electronic immunization register using the national identification number to determine the completeness and accuracy of the electronic register. Results Both completeness (90.9%; 95% CI: 88.4–93.4) and accuracy (93.3%; 95% CI: 84.1–97.4) of the electronic immunization register were high when compared to written records. The increase in completeness over time indicated a delay in data entry. Conclusion Through this audit, we have demonstrated concordance between a newly introduced electronic register and health provider records in a middle-income country setting. Based on this experience, we recommend that electronic registers be accompanied by routine quality assurance procedures for the monitoring of vaccination programmes in such settings. PMID:29051836

Self-assembled oxide films with tailored nanoscale ionic and electronic channels for controlled resistive switching

NASA Astrophysics Data System (ADS)

Cho, Seungho; Yun, Chao; Tappertzhofen, Stefan; Kursumovic, Ahmed; Lee, Shinbuhm; Lu, Ping; Jia, Quanxi; Fan, Meng; Jian, Jie; Wang, Haiyan; Hofmann, Stephan; MacManus-Driscoll, Judith L.

2016-08-01

Resistive switches are non-volatile memory cells based on nano-ionic redox processes that offer energy efficient device architectures and open pathways to neuromorphics and cognitive computing. However, channel formation typically requires an irreversible, not well controlled electroforming process, giving difficulty to independently control ionic and electronic properties. The device performance is also limited by the incomplete understanding of the underlying mechanisms. Here, we report a novel memristive model material system based on self-assembled Sm-doped CeO2 and SrTiO3 films that allow the separate tailoring of nanoscale ionic and electronic channels at high density (~1012 inch-2). We systematically show that these devices allow precise engineering of the resistance states, thus enabling large on-off ratios and high reproducibility. The tunable structure presents an ideal platform to explore ionic and electronic mechanisms and we expect a wide potential impact also on other nascent technologies, ranging from ionic gating to micro-solid oxide fuel cells and neuromorphics.

Study of a high power hydrogen beam diagnostic based on secondary electron emission.

PubMed

Sartori, E; Panasenkov, A; Veltri, P; Serianni, G; Pasqualotto, R

2016-11-01

In high power neutral beams for fusion, beam uniformity is an important figure of merit. Knowing the transverse power profile is essential during the initial phases of beam source operation, such as those expected for the ITER heating neutral beam (HNB) test facility. To measure it a diagnostic technique is proposed, based on the collection of secondary electrons generated by beam-surface and beam-gas interactions, by an array of positively biased collectors placed behind the calorimeter tubes. This measurement showed in the IREK test stand good proportionality to the primary beam current. To investigate the diagnostic performances in different conditions, we developed a numerical model of secondary electron emission, induced by beam particle impact on the copper tubes, and reproducing the cascade of secondary emission caused by successive electron impacts. The model is first validated against IREK measurements. It is then applied to the HNB case, to assess the locality of the measurement, the proportionality to the beam current density, and the influence of beam plasma.

Eigenmode analysis of a high-gain free-electron laser based on a transverse gradient undulator

DOE PAGES

Baxevanis, Panagiotis; Huang, Zhirong; Ruth, Ronald; ...

2015-01-27

Here, the use of a transverse gradient undulator (TGU) is viewed as an attractive option for free-electron lasers (FELs) driven by beams with a large energy spread. By suitably dispersing the electron beam and tilting the undulator poles, the energy spread effect can be substantially mitigated. However, adding the dispersion typically leads to electron beams with large aspect ratios. As a result, the presence of higher-order modes in the FEL radiation can become significant. To investigate this effect, we study the eigenmode properties of a TGU-based, high-gain FEL, using both an analytically-solvable model and a variational technique. Our analysis, whichmore » includes the fundamental and the higher-order FEL eigenmodes, can provide an estimate of the mode content for the output radiation. This formalism also enables us to study the trade-off between FEL gain and transverse coherence. Numerical results are presented for a representative soft X-ray, TGU FEL example.« less

Eigenmode analysis of a high-gain free-electron laser based on a transverse gradient undulator

NASA Astrophysics Data System (ADS)

Baxevanis, Panagiotis; Huang, Zhirong; Ruth, Ronald; Schroeder, Carl B.

2015-01-01

The use of a transverse gradient undulator (TGU) is viewed as an attractive option for free-electron lasers (FELs) driven by beams with a large energy spread. By suitably dispersing the electron beam and tilting the undulator poles, the energy spread effect can be substantially mitigated. However, adding the dispersion typically leads to electron beams with large aspect ratios. As a result, the presence of higher-order modes in the FEL radiation can become significant. To investigate this effect, we study the eigenmode properties of a TGU-based, high-gain FEL, using both an analytically-solvable model and a variational technique. Our analysis, which includes the fundamental and the higher-order FEL eigenmodes, can provide an estimate of the mode content for the output radiation. This formalism also enables us to study the trade-off between FEL gain and transverse coherence. Numerical results are presented for a representative soft X-ray, TGU FEL example.

Measurement and analysis of electron-neutral collision frequency in the calibrated cutoff probe

DOE Office of Scientific and Technical Information (OSTI.GOV)

You, K. H.; Seo, B. H.; Kim, J. H.

2016-03-15

As collisions between electrons and neutral particles constitute one of the most representative physical phenomena in weakly ionized plasma, the electron-neutral (e-n) collision frequency is a very important plasma parameter as regards understanding the physics of this material. In this paper, we measured the e-n collision frequency in the plasma using a calibrated cutoff-probe. A highly accurate reactance spectrum of the plasma/cutoff-probe system, which is expected based on previous cutoff-probe circuit simulations [Kim et al., Appl. Phys. Lett. 99, 131502 (2011)], is obtained using the calibrated cutoff-probe method, and the e-n collision frequency is calculated based on the cutoff-probe circuitmore » model together with the high-frequency conductance model. The measured e-n collision frequency (by the calibrated cutoff-probe method) is compared and analyzed with that obtained using a Langmuir probe, with the latter being calculated from the measured electron-energy distribution functions, in wide range of gas pressure.« less

Electrons and photons at High Level Trigger in CMS for Run II

NASA Astrophysics Data System (ADS)

Anuar, Afiq A.

2015-12-01

The CMS experiment has been designed with a 2-level trigger system. The first level is implemented using custom-designed electronics. The second level is the so-called High Level Trigger (HLT), a streamlined version of the CMS offline reconstruction software running on a computer farm. For Run II of the Large Hadron Collider, the increase in center-of-mass energy and luminosity will raise the event rate to a level challenging for the HLT algorithms. New approaches have been studied to keep the HLT output rate manageable while maintaining thresholds low enough to cover physics analyses. The strategy mainly relies on porting online the ingredients that have been successfully applied in the offline reconstruction, thus allowing to move HLT selection closer to offline cuts. Improvements in HLT electron and photon definitions will be presented, focusing in particular on: updated clustering algorithm and the energy calibration procedure, new Particle-Flow-based isolation approach and pileup mitigation techniques, and the electron-dedicated track fitting algorithm based on Gaussian Sum Filter.

Cisplatin intrastrand adducts sensitize DNA to base damage by hydrated electrons.

PubMed

Behmand, B; Wagner, J R; Sanche, L; Hunting, D J

2014-05-08

The oligonucleotide TTTTTGTGTTT with or without a cisplatin adduct was reacted with hydrated electrons generated by ionizing radiation. Hydroxyl radicals were quenched with ethylenediaminetetraacetic acid (EDTA), and the solutions were bubbled with wet nitrogen to eliminate oxygen, a scavenger of hydrated electrons. Prior to irradiation, the structure of the initial cisplatin adduct was identified by mass spectrometry as G-cisplatin-G. Radiation damage to DNA bases was quantified by high-performance liquid chromatography (HPLC), after enzymatic digestion of the TTTTTGTGTTT-cisplatin complex to deoxyribonucleosides. The masses of the platinum adducts following digestion and separation by HPLC were measured by mass spectrometry. Our results demonstrate that hydrated electrons induce damage to thymines as well as detachment of the cisplatin moiety from both guanines in the oligonucleotide. This detachment regenerates both unmodified guanine and damaged guanine, in equimolar amounts. At 1000 Gy, a net average of 2.5 thymines and 1 guanine are damaged for each platinum lost from the oligonucleotide. Given the extensive base damage that occurs for each cisplatin adduct lost, it is clear that, prior to undergoing detachment, these adducts must catalyze several cycles of reactions of hydrated electrons with DNA bases. It is likely that a single reaction leads to the loss of the cisplatin adduct and the damage observed on the guanine base; however, the damage to the thymine bases must require the continued presence of the cisplatin adduct, acting as a catalyst. To our knowledge, this is the first time that platinum-DNA adducts have been shown to have catalytic activity. We propose two pathways for the interaction of hydrated electrons with TTTTTGTGTTT-cisplatin: (1) the hydrated electron is initially captured by a thymine base and transferred by base to base electron hopping to the guanine site, where the cisplatin moiety detaches from the oligonucleotide via dissociative electron attachment, and (2) the hydrated electron interacts directly with the platinum-guanine adduct and induces detachment of the cisplatin moiety via dissociative electron attachment. Although the precise mechanism remains to be elucidated, our results provide important insights into the radiosensitization of DNA by cisplatin.

Cisplatin Intrastrand Adducts Sensitize DNA to Base Damage by Hydrated Electrons

PubMed Central

Behmand, B.; Wagner, J. R.; Sanche, L.; Hunting, D. J.

2015-01-01

The oligonucleotide TTTTTGTGTTT with or without a cisplatin adduct was reacted with hydrated electrons generated by ionizing radiation. Hydroxyl radicals were quenched with ethylenediaminetetraacetic acid (EDTA), and the solutions were bubbled with wet nitrogen to eliminate oxygen, a scavenger of hydrated electrons. Prior to irradiation, the structure of the initial cisplatin adduct was identified by mass spectrometry as G-cisplatin-G. Radiation damage to DNA bases was quantified by high-performance liquid chromatography (HPLC), after enzymatic digestion of the TTTTTGTGTTT-cisplatin complex to deoxyribonucleosides. The masses of the platinum adducts following digestion and separation by HPLC were measured by mass spectrometry. Our results demonstrate that hydrated electrons induce damage to thymines as well as detachment of the cisplatin moiety from both guanines in the oligonucleotide. This detachment regenerates both unmodified guanine and damaged guanine, in equimolar amounts. At 1000 Gy, a net average of 2.5 thymines and 1 guanine are damaged for each platinum lost from the oligonucleotide. Given the extensive base damage that occurs for each cisplatin adduct lost, it is clear that, prior to undergoing detachment, these adducts must catalyze several cycles of reactions of hydrated electrons with DNA bases. It is likely that a single reaction leads to the loss of the cisplatin adduct and the damage observed on the guanine base; however, the damage to the thymine bases must require the continued presence of the cisplatin adduct, acting as a catalyst. To our knowledge, this is the first time that platinum-DNA adducts have been shown to have catalytic activity. We propose two pathways for the interaction of hydrated electrons with TTTTTGTGTTT-cisplatin: (1) the hydrated electron is initially captured by a thymine base and transferred by base to base electron hopping to the guanine site, where the cisplatin moiety detaches from the oligonucleotide via dissociative electron attachment, and (2) the hydrated electron interacts directly with the platinum-guanine adduct and induces detachment of the cisplatin moiety via dissociative electron attachment. Although the precise mechanism remains to be elucidated, our results provide important insights into the radiosensitization of DNA by cisplatin. PMID:24779712

Rolled-Up Optical and Electronic Components for On-Chip Integrative Applications

DTIC Science & Technology

2013-10-10

attracted broad interest to create new three- dimensional electronics such as wrapable solar cells , pressure sensors and paper displays. The adaption to...cone-like microtube cavities Rolled-up electronics 1. Energy storage elements based on hybrid organic/inorganic nanomembranes 2.High performance...fabricated in this way to detect and analyze individual cells , biomolecules, and their bioactivities. 3.2 Three-dimensional confinement in asymmetric

Techniques for blade tip clearance measurements with capacitive probes

NASA Astrophysics Data System (ADS)

Steiner, Alexander

2000-07-01

This article presents a proven but advantageous concept for blade tip clearance evaluation in turbomachinery. The system is based on heavy duty probes and a high frequency (HF) and amplifying electronic unit followed by a signal processing unit. Measurements are taken under high temperature and other severe conditions such as ionization. Every single blade can be observed. The signals are digitally filtered and linearized in real time. The electronic set-up is highly integrated. Miniaturized versions of the electronic units exist. The small and robust units can be used in turbo engines in flight. With several probes at different angles in one radial plane further information is available. Shaft eccentricity or blade oscillations can be calculated.

Radiation-Hardened Electronics for Advanced Communications Systems

NASA Technical Reports Server (NTRS)

Whitaker, Sterling

2015-01-01

Novel approach enables high-speed special-purpose processors Advanced reconfigurable and reprogrammable communication systems will require sub-130-nanometer electronics. Legacy single event upset (SEU) radiation-tolerant circuits are ineffective at speeds greater than 125 megahertz. In Phase I of this project, ICs, LLC, demonstrated new base-level logic circuits that provide SEU immunity for sub-130-nanometer high-speed circuits. In Phase II, the company developed an innovative self-restoring logic (SRL) circuit and a system approach that provides high-speed, SEU-tolerant solutions that are effective for sub-130-nanometer electronics scalable to at least 22-nanometer processes. The SRL system can be used in the design of NASA's next-generation special-purpose processors, especially reconfigurable communication processors.

From Carbon-Based Nanotubes to Nanocages for Advanced Energy Conversion and Storage.

PubMed

Wu, Qiang; Yang, Lijun; Wang, Xizhang; Hu, Zheng

2017-02-21

Carbon-based nanomaterials have been the focus of research interests in the past 30 years due to their abundant microstructures and morphologies, excellent properties, and wide potential applications, as landmarked by 0D fullerene, 1D nanotubes, and 2D graphene. With the availability of high specific surface area (SSA), well-balanced pore distribution, high conductivity, and tunable wettability, carbon-based nanomaterials are highly expected as advanced materials for energy conversion and storage to meet the increasing demands for clean and renewable energies. In this context, attention is usually attracted by the star material of graphene in recent years. In this Account, we overview our studies on carbon-based nanotubes to nanocages for energy conversion and storage, including their synthesis, performances, and related mechanisms. The two carbon nanostructures have the common features of interior cavity, high conductivity, and easy doping but much different SSAs and pore distributions, leading to different performances. We demonstrated a six-membered-ring-based growth mechanism of carbon nanotubes (CNTs) with benzene precursor based on the structural similarity of the benzene ring to the building unit of CNTs. By this mechanism, nitrogen-doped CNTs (NCNTs) with homogeneous N distribution and predominant pyridinic N were obtained with pyridine precursor, providing a new kind of support for convenient surface functionalization via N-participation. Accordingly, various transition-metal nanoparticles were directly immobilized onto NCNTs without premodification. The so-constructed catalysts featured high dispersion, narrow size distribution and tunable composition, which presented superior catalytic performances for energy conversions, for example, the oxygen reduction reaction (ORR) and methanol oxidation in fuel cells. With the advent of the new field of carbon-based metal-free electrocatalysts, we first extended ORR catalysts from the electron-rich N-doped to the electron-deficient B-doped sp 2 carbon. The combined experimental and theoretical study indicated the ORR activity originated from the activation of carbon π electrons by breaking the integrity of π conjugation, despite the electron-rich or electron-deficient nature of the dopants. With this understanding, metal-free electrocatalysts were further extended to the dopant-free defective carbon nanomaterials. Moreover, we developed novel 3D hierarchical carbon-based nanocages by the in situ MgO template method, which featured coexisting micro-meso-macropores and much larger SSA than the nanotubes. The unique 3D architecture avoids the restacking generally faced by 2D graphene due to the intrinsic π-π interaction. Consequently, the hierarchical nanocages presented superior performances not only as new catalyst supports and metal-free electrocatalysts but also as electrode materials for energy storage. State-of-the-art supercapacitive performances were achieved with high energy density and power density, as well as excellent rate capability and cycling stability. The large interior space of the nanocages enabled the encapsulation of high-loading sulfur to alleviate polysulfide dissolution while greatly enhancing the electron conduction and Li-ion diffusion, leading to top level performance of lithium-sulfur battery. These results not only provide unique carbon-based nanomaterials but also lead to in-depth understanding of growth mechanisms, material design, and structure-performance relationships, which is significant to promote their energy applications and also to enrich the exciting field of carbon-based nanomaterials.

A systematic study of posterior cervical lymph node irradiation with electrons: Conventional versus customized planning.

PubMed

Jankowska, Petra J; Kong, Christine; Burke, Kevin; Harrington, Kevin J; Nutting, Christopher

2007-10-01

High dose irradiation of the posterior cervical lymph nodes usually employs applied electron fields to treat the target volume and maintain the spinal cord dose within tolerance. In the light of recent advances in elective lymph node localisation we investigated optimization of field shape and electron energy to treat this target volume. In this study, three sequential hypotheses were tested. Firstly, that customization of the electron fields based on the nodal PTV outlined gives better PTV coverage than conventional field delineation. Using the consensus guidelines, customization of the electron field shape was compared to conventional fields based on bony landmarks. Secondly, that selection of electron energy using DVHs for spinal cord and PTV improves the minimum dose to PTV. Electron dose-volume histograms (DVHs) for the PTV, spinal cord and para-vertebral muscles, were generated using the Monte Carlo electron algorithm. These DVHs were used to compare standard vs optimized electron energy calculations. Finally, that combination of field customization and electron energy optimization improves both the minimum and mean doses to PTV compared with current standard practice. Customized electron beam shaping based on the consensus guidelines led to fewer geographical misses than standard field shaping. Customized electron energy calculation led to higher minimum doses to the PTV. Overall, the customization of field shape and energy resulted in an improved mean dose to the PTV (92% vs 83% p=0.02) and a 27% improvement in the minimum dose delivered to the PTV (45% vs 18% p=0.0009). Optimization of electron field shape and beam energy based on current consensus guidelines led to significant improvement in PTV coverage and may reduce recurrence rates.

SiGe Based Low Temperature Electronics for Lunar Surface Applications

NASA Technical Reports Server (NTRS)

Mojarradi, Mohammad M.; Kolawa, Elizabeth; Blalock, Benjamin; Cressler, John

2012-01-01

The temperature at the permanently shadowed regions of the moon's surface is approximately -240 C. Other areas of the lunar surface experience temperatures that vary between 120 C and -180 C during the day and night respectively. To protect against the large temperature variations of the moon surface, traditional electronics used in lunar robotics systems are placed inside a thermally controlled housing which is bulky, consumes power and adds complexity to the integration and test. SiGe Based electronics have the capability to operate over wide temperature range like that of the lunar surface. Deploying low temperature SiGe electronics in a lander platform can minimize the need for the central thermal protection system and enable the development of a new generation of landers and mobility platforms with highly efficient distributed architecture. For the past five years a team consisting of NASA, university and industry researchers has been examining the low temperature and wide temperature characteristic of SiGe based transistors for developing electronics for wide temperature needs of NASA environments such as the Moon, Titan, Mars and Europa. This presentation reports on the status of the development of wide temperature SiGe based electronics for the landers and lunar surface mobility systems.

Emergence of electron coherence and two-color all-optical switching in MoS2 based on spatial self-phase modulation

PubMed Central

Wu, Yanling; Wu, Qiong; Sun, Fei; Cheng, Cai; Meng, Sheng; Zhao, Jimin

2015-01-01

Generating electron coherence in quantum materials is essential in optimal control of many-body interactions and correlations. In a multidomain system this signifies nonlocal coherence and emergence of collective phenomena, particularly in layered 2D quantum materials possessing novel electronic structures and high carrier mobilities. Here we report nonlocal ac electron coherence induced in dispersed MoS2 flake domains, using coherent spatial self-phase modulation (SSPM). The gap-dependent nonlinear dielectric susceptibility χ(3) measured is surprisingly large, where direct interband transition and two-photon SSPM are responsible for excitations above and below the bandgap, respectively. A wind-chime model is proposed to account for the emergence of the ac electron coherence. Furthermore, all-optical switching is achieved based on SSPM, especially with two-color intraband coherence, demonstrating that electron coherence generation is a ubiquitous property of layered quantum materials. PMID:26351696

High-Frequency, 6.2 Angstrom pN Heterojunction Diodes

DTIC Science & Technology

2012-01-01

this paper were grown by solid- source molecular beam epitaxy (MBE). Here, the use of a lower- case letter (p) for the narrow bandgap layer and upper...electron and hole mobilities. High electron mobil- ity transistors ( HEMTs ) fabricated from these materials have shown good operating characteristics [1,2...Furthermore, the first monolithic microwave integrated circuits (MMICs) fabricated using 6.1 Å based HEMTs have been demonstrated [3]. New mate- rials

Wafer-Scale Integration of Graphene-based Electronic, Optoelectronic and Electroacoustic Devices

PubMed Central

Tian, He; Yang, Yi; Xie, Dan; Cui, Ya-Long; Mi, Wen-Tian; Zhang, Yuegang; Ren, Tian-Ling

2014-01-01

In virtue of its superior properties, the graphene-based device has enormous potential to be a supplement or an alternative to the conventional silicon-based device in varies applications. However, the functionality of the graphene devices is still limited due to the restriction of the high cost, the low efficiency and the low quality of the graphene growth and patterning techniques. We proposed a simple one-step laser scribing fabrication method to integrate wafer-scale high-performance graphene-based in-plane transistors, photodetectors, and loudspeakers. The in-plane graphene transistors have a large on/off ratio up to 5.34. And the graphene photodetector arrays were achieved with photo responsivity as high as 0.32 A/W. The graphene loudspeakers realize wide-band sound generation from 1 to 50 kHz. These results demonstrated that the laser scribed graphene could be used for wafer-scale integration of a variety of graphene-based electronic, optoelectronic and electroacoustic devices. PMID:24398542

Nanoplasma Formation by High Intensity Hard X-rays

PubMed Central

Tachibana, T.; Jurek, Z.; Fukuzawa, H.; Motomura, K.; Nagaya, K.; Wada, S.; Johnsson, P.; Siano, M.; Mondal, S.; Ito, Y.; Kimura, M.; Sakai, T.; Matsunami, K.; Hayashita, H.; Kajikawa, J.; Liu, X.-J.; Robert, E.; Miron, C.; Feifel, R.; Marangos, J. P.; Tono, K.; Inubushi, Y.; Yabashi, M.; Son, S.-K.; Ziaja, B.; Yao, M.; Santra, R.; Ueda, K.

2015-01-01

Using electron spectroscopy, we have investigated nanoplasma formation from noble gas clusters exposed to high-intensity hard-x-ray pulses at ~5 keV. Our experiment was carried out at the SPring-8 Angstrom Compact free electron LAser (SACLA) facility in Japan. Dedicated theoretical simulations were performed with the molecular dynamics tool XMDYN. We found that in this unprecedented wavelength regime nanoplasma formation is a highly indirect process. In the argon clusters investigated, nanoplasma is mainly formed through secondary electron cascading initiated by slow Auger electrons. Energy is distributed within the sample entirely through Auger processes and secondary electron cascading following photoabsorption, as in the hard x-ray regime there is no direct energy transfer from the field to the plasma. This plasma formation mechanism is specific to the hard-x-ray regime and may, thus, also be important for XFEL-based molecular imaging studies. In xenon clusters, photo- and Auger electrons contribute more significantly to the nanoplasma formation. Good agreement between experiment and simulations validates our modelling approach. This has wide-ranging implications for our ability to quantitatively predict the behavior of complex molecular systems irradiated by high-intensity hard x-rays. PMID:26077863

Image acquisition with immersion objective lenses using electrons emitted with several tenths of an electron volt energies: towards high spatial resolution ESCA analysis.

PubMed

Bernheim, M

2006-03-01

This study aims to evaluate the spatial resolution achievable with photoelectrons in order to perform localised UPS or XPS analyses on various heterogeneous samples. This investigation is intentionally restricted to direct image acquisition by immersion objective lenses, involving electrons ejected with initial energies of several tenths of an electron-volt. In order to characterise the contribution of all optical elements, analytical investigations were associated to numerical simulations based on SIMION 7 software. The acquisition of high-quality images implies a simultaneous reduction in spherical and chromatic aberrations by a narrow aperture stop placed at the output pupil of the objective. With such limitations in useful emission angles, it is shown that monochromatic electron beams build images with a resolution of about 1 nm, especially for the acceleration bias mode where the focussing electrode is biased at a positive high voltage. Even energy dispersed electron beams, limited by a 4 eV band pass spectrometer, can produce images convenient for highly localised ESCA analyses (resolution 3 nm), where the objective lens is associated with an aperture stop of 30 microm in diameter without using acceleration voltages above 5000 V.

Stabilization of electron-scale turbulence by electron density gradient in national spherical torus experiment

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ruiz Ruiz, J.; White, A. E.; Ren, Y.

2015-12-15

Theory and experiments have shown that electron temperature gradient (ETG) turbulence on the electron gyro-scale, k{sub ⊥}ρ{sub e} ≲ 1, can be responsible for anomalous electron thermal transport in NSTX. Electron scale (high-k) turbulence is diagnosed in NSTX with a high-k microwave scattering system [D. R. Smith et al., Rev. Sci. Instrum. 79, 123501 (2008)]. Here we report on stabilization effects of the electron density gradient on electron-scale density fluctuations in a set of neutral beam injection heated H-mode plasmas. We found that the absence of high-k density fluctuations from measurements is correlated with large equilibrium density gradient, which ismore » shown to be consistent with linear stabilization of ETG modes due to the density gradient using the analytical ETG linear threshold in F. Jenko et al. [Phys. Plasmas 8, 4096 (2001)] and linear gyrokinetic simulations with GS2 [M. Kotschenreuther et al., Comput. Phys. Commun. 88, 128 (1995)]. We also found that the observed power of electron-scale turbulence (when it exists) is anti-correlated with the equilibrium density gradient, suggesting density gradient as a nonlinear stabilizing mechanism. Higher density gradients give rise to lower values of the plasma frame frequency, calculated based on the Doppler shift of the measured density fluctuations. Linear gyrokinetic simulations show that higher values of the electron density gradient reduce the value of the real frequency, in agreement with experimental observation. Nonlinear electron-scale gyrokinetic simulations show that high electron density gradient reduces electron heat flux and stiffness, and increases the ETG nonlinear threshold, consistent with experimental observations.« less

An Electron-Transporting Thiazole-Based Polymer Synthesized Through Direct (Hetero)Arylation Polymerization.

PubMed

Chávez, Patricia; Bulut, Ibrahim; Fall, Sadiara; Ibraikulov, Olzhas A; Chochos, Christos L; Bartringer, Jérémy; Heiser, Thomas; Lévêque, Patrick; Leclerc, Nicolas

2018-05-25

In this work, a new n -type polymer based on a thiazole-diketopyrrolopyrrole unit has been synthesized through direct (hetero)arylation polycondensation. The molar mass has been optimized by systematic variation of the the monomer concentration. Optical and electrochemical properties have been studied. They clearly suggested that this polymer possess a high electron affinity together with a very interesting absorption band, making it a good non-fullerene acceptor candidate. As a consequence, its charge transport and photovoltaic properties in a blend with the usual P3HT electron-donating polymer have been investigated.

Flexible integrated circuits and multifunctional electronics based on single atomic layers of MoS2 and graphene

NASA Astrophysics Data System (ADS)

Amani, Matin; Burke, Robert A.; Proie, Robert M.; Dubey, Madan

2015-03-01

Two-dimensional materials, such as graphene and its analogues, have been investigated by numerous researchers for high performance flexible and conformal electronic systems, because they offer the ultimate level of thickness scaling, atomically smooth surfaces and high crystalline quality. Here, we use layer-by-layer transfer of large area molybdenum disulphide (MoS2) and graphene grown by chemical vapor deposition (CVD) to demonstrate electronics on flexible polyimide (PI) substrates. On the same PI substrate, we are able to simultaneously fabricate MoS2 based logic, non-volatile memory cells with graphene floating gates, photo-detectors and MoS2 transistors with tunable source and drain contacts. We are also able to demonstrate that these flexible heterostructure devices have very high electronic performance, comparable to four point measurements taken on SiO2 substrates, with on/off ratios >107 and field effect mobilities as high as 16.4 cm2 V-1 s-1. Additionally, the heterojunctions show high optoelectronic sensitivity and were operated as photodetectors with responsivities over 30 A W-1. Through local gating of the individual graphene/MoS2 contacts, we are able to tune the contact resistance over the range of 322-1210 Ω mm for each contact, by modulating the graphene work function. This leads to devices with tunable and multifunctional performance that can be implemented in a conformable platform.

Flexible integrated circuits and multifunctional electronics based on single atomic layers of MoS2 and graphene.

PubMed

Amani, Matin; Burke, Robert A; Proie, Robert M; Dubey, Madan

2015-03-20

Two-dimensional materials, such as graphene and its analogues, have been investigated by numerous researchers for high performance flexible and conformal electronic systems, because they offer the ultimate level of thickness scaling, atomically smooth surfaces and high crystalline quality. Here, we use layer-by-layer transfer of large area molybdenum disulphide (MoS2) and graphene grown by chemical vapor deposition (CVD) to demonstrate electronics on flexible polyimide (PI) substrates. On the same PI substrate, we are able to simultaneously fabricate MoS2 based logic, non-volatile memory cells with graphene floating gates, photo-detectors and MoS2 transistors with tunable source and drain contacts. We are also able to demonstrate that these flexible heterostructure devices have very high electronic performance, comparable to four point measurements taken on SiO2 substrates, with on/off ratios >10(7) and field effect mobilities as high as 16.4 cm(2) V(-1) s(-1). Additionally, the heterojunctions show high optoelectronic sensitivity and were operated as photodetectors with responsivities over 30 A W(-1). Through local gating of the individual graphene/MoS2 contacts, we are able to tune the contact resistance over the range of 322-1210 Ω mm for each contact, by modulating the graphene work function. This leads to devices with tunable and multifunctional performance that can be implemented in a conformable platform.

CMOS technology: a critical enabler for free-form electronics-based killer applications

NASA Astrophysics Data System (ADS)

Hussain, Muhammad M.; Hussain, Aftab M.; Hanna, Amir

2016-05-01

Complementary metal oxide semiconductor (CMOS) technology offers batch manufacturability by ultra-large-scaleintegration (ULSI) of high performance electronics with a performance/cost advantage and profound reliability. However, as of today their focus has been on rigid and bulky thin film based materials. Their applications have been limited to computation, communication, display and vehicular electronics. With the upcoming surge of Internet of Everything, we have critical opportunity to expand the world of electronics by bridging between CMOS technology and free form electronics which can be used as wearable, implantable and embedded form. The asymmetry of shape and softness of surface (skins) in natural living objects including human, other species, plants make them incompatible with the presently available uniformly shaped and rigidly structured today's CMOS electronics. But if we can break this barrier then we can use the physically free form electronics for applications like plant monitoring for expansion of agricultural productivity and quality, we can find monitoring and treatment focused consumer healthcare electronics - and many more creative applications. In our view, the fundamental challenge is to engage the mass users to materialize their creative ideas. Present form of electronics are too complex to understand, to work with and to use. By deploying game changing additive manufacturing, low-cost raw materials, transfer printing along with CMOS technology, we can potentially stick high quality CMOS electronics on any existing objects and embed such electronics into any future objects that will be made. The end goal is to make them smart to augment the quality of our life. We use a particular example on implantable electronics (brain machine interface) and its integration strategy enabled by CMOS device design and technology run path.

High-performance, scalable optical network-on-chip architectures

NASA Astrophysics Data System (ADS)

Tan, Xianfang

The rapid advance of technology enables a large number of processing cores to be integrated into a single chip which is called a Chip Multiprocessor (CMP) or a Multiprocessor System-on-Chip (MPSoC) design. The on-chip interconnection network, which is the communication infrastructure for these processing cores, plays a central role in a many-core system. With the continuously increasing complexity of many-core systems, traditional metallic wired electronic networks-on-chip (NoC) became a bottleneck because of the unbearable latency in data transmission and extremely high energy consumption on chip. Optical networks-on-chip (ONoC) has been proposed as a promising alternative paradigm for electronic NoC with the benefits of optical signaling communication such as extremely high bandwidth, negligible latency, and low power consumption. This dissertation focus on the design of high-performance and scalable ONoC architectures and the contributions are highlighted as follow: 1. A micro-ring resonator (MRR)-based Generic Wavelength-routed Optical Router (GWOR) is proposed. A method for developing any sized GWOR is introduced. GWOR is a scalable non-blocking ONoC architecture with simple structure, low cost and high power efficiency compared to existing ONoC designs. 2. To expand the bandwidth and improve the fault tolerance of the GWOR, a redundant GWOR architecture is designed by cascading different type of GWORs into one network. 3. The redundant GWOR built with MRR-based comb switches is proposed. Comb switches can expand the bandwidth while keep the topology of GWOR unchanged by replacing the general MRRs with comb switches. 4. A butterfly fat tree (BFT)-based hybrid optoelectronic NoC (HONoC) architecture is developed in which GWORs are used for global communication and electronic routers are used for local communication. The proposed HONoC uses less numbers of electronic routers and links than its counterpart of electronic BFT-based NoC. It takes the advantages of GWOR in optical communication and BFT in non-uniform traffic communication and three-dimension (3D) implementation. 5. A cycle-accurate NoC simulator is developed to evaluate the performance of proposed HONoC architectures. It is a comprehensive platform that can simulate both electronic and optical NoCs. Different size HONoC architectures are evaluated in terms of throughput, latency and energy dissipation. Simulation results confirm that HONoC achieves good network performance with lower power consumption.

Quo vadis, unimolecular electronics?

PubMed

Metzger, Robert Melville

2018-06-07

This paper reviews the present status of unimolecular electronics (UME). The field started in the 1970s with a hope that some day organic molecules (∼2 nm in size), when used as electronic components, would challenge Si-based inorganic electronics in ultimate-high-density integrated circuits. The technological push to ever smaller inorganic device sizes (Moore's "law") was driven by a profit motive and by vast investments. UME, the underfunded pauper, may have lost that "race to the bottom", but some excellent science is left to be done.

Structure and properties of polyaniline nanocomposite coatings containing gold nanoparticles formed by low-energy electron beam deposition

NASA Astrophysics Data System (ADS)

Wang, Surui; Rogachev, A. A.; Yarmolenko, M. A.; Rogachev, A. V.; Xiaohong, Jiang; Gaur, M. S.; Luchnikov, P. A.; Galtseva, O. V.; Chizhik, S. A.

2018-01-01

Highly ordered conductive polyaniline (PANI) coatings containing gold nanoparticles were prepared by low-energy electron beam deposition method, with emeraldine base and chloroauric acid used as target materials. The molecular and chemical structure of the layers was studied by Fourier transform infrared, Raman, UV-vis and X-ray photoelectron spectroscopy. The morphology of the coatings was investigated by atomic force and transmission electron microscopy. Conductive properties were obtained by impedance spectroscopy method and scanning spreading resistance microscopy mode at the micro- and nanoscale. It was found that the emeraldine base layers formed from the products of electron-beam dispersion have extended, non-conductive polymer chains with partially reduced structure, with the ratio of imine and amine groups equal to 0.54. In case of electron-beam dispersion of the emeraldine base and chloroauric acid, a protoemeraldine structure is formed with conductivity 0.1 S/cm. The doping of this structure was carried out due to hydrochloric acid vapor and gold nanoparticles formed by decomposition of chloroauric acid, which have a narrow size distribution, with the most probable diameter about 40 nm. These gold nanoparticles improve the conductivity of the thin layers of PANI + Au composite, promoting intra- and intermolecular charge transfer of the PANI macromolecules aligned along the coating surface both at direct and alternating voltage. The proposed deposition method of highly oriented, conductive nanocomposite PANI-based coatings may be used in the direct formation of functional layers on conductive and non-conductive substrates.

Concerted electron-proton transfer in the optical excitation of hydrogen-bonded dyes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Westlake, Brittany C.; Brennaman, Kyle M.; Concepcion, Javier J.

2011-05-24

The simultaneous, concerted transfer of electrons and protons—electron-proton transfer (EPT)—is an important mechanism utilized in chemistry and biology to avoid high energy intermediates. There are many examples of thermally activated EPT in ground-state reactions and in excited states following photoexcitation and thermal relaxation. Here we report application of ultrafast excitation with absorption and Raman monitoring to detect a photochemically driven EPT process (photo-EPT). In this process, both electrons and protons are transferred during the absorption of a photon. Photo-EPT is induced by intramolecular charge-transfer (ICT) excitation of hydrogen-bonded-base adducts with either a coumarin dye or 4-nitro-4'-biphenylphenol. Femtosecond transient absorption spectralmore » measurements following ICT excitation reveal the appearance of two spectroscopically distinct states having different dynamical signatures. One of these states corresponds to a conventional ICT excited state in which the transferring H⁺ is initially associated with the proton donor. Proton transfer to the base (B) then occurs on the picosecond time scale. The other state is an ICT-EPT photoproduct. Upon excitation it forms initially in the nuclear configuration of the ground state by application of the Franck–Condon principle. However, due to the change in electronic configuration induced by the transition, excitation is accompanied by proton transfer with the protonated base formed with a highly elongated ⁺H–B bond. Coherent Raman spectroscopy confirms the presence of a vibrational mode corresponding to the protonated base in the optically prepared state.« less

Concerted electron-proton transfer in the optical excitation of hydrogen-bonded dyes.

PubMed

Westlake, Brittany C; Brennaman, M Kyle; Concepcion, Javier J; Paul, Jared J; Bettis, Stephanie E; Hampton, Shaun D; Miller, Stephen A; Lebedeva, Natalia V; Forbes, Malcolm D E; Moran, Andrew M; Meyer, Thomas J; Papanikolas, John M

2011-05-24

The simultaneous, concerted transfer of electrons and protons--electron-proton transfer (EPT)--is an important mechanism utilized in chemistry and biology to avoid high energy intermediates. There are many examples of thermally activated EPT in ground-state reactions and in excited states following photoexcitation and thermal relaxation. Here we report application of ultrafast excitation with absorption and Raman monitoring to detect a photochemically driven EPT process (photo-EPT). In this process, both electrons and protons are transferred during the absorption of a photon. Photo-EPT is induced by intramolecular charge-transfer (ICT) excitation of hydrogen-bonded-base adducts with either a coumarin dye or 4-nitro-4'-biphenylphenol. Femtosecond transient absorption spectral measurements following ICT excitation reveal the appearance of two spectroscopically distinct states having different dynamical signatures. One of these states corresponds to a conventional ICT excited state in which the transferring H(+) is initially associated with the proton donor. Proton transfer to the base (B) then occurs on the picosecond time scale. The other state is an ICT-EPT photoproduct. Upon excitation it forms initially in the nuclear configuration of the ground state by application of the Franck-Condon principle. However, due to the change in electronic configuration induced by the transition, excitation is accompanied by proton transfer with the protonated base formed with a highly elongated (+)H ─ B bond. Coherent Raman spectroscopy confirms the presence of a vibrational mode corresponding to the protonated base in the optically prepared state.

High-k shallow traps observed by charge pumping with varying discharging times

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ho, Szu-Han; Chen, Ching-En; Tseng, Tseung-Yuen

2013-11-07

In this paper, we investigate the influence of falling time and base level time on high-k bulk shallow traps measured by charge pumping technique in n-channel metal-oxide-semiconductor field-effect transistors with HfO{sub 2}/metal gate stacks. N{sub T}-V{sub high} {sub level} characteristic curves with different duty ratios indicate that the electron detrapping time dominates the value of N{sub T} for extra contribution of I{sub cp} traps. N{sub T} is the number of traps, and I{sub cp} is charge pumping current. By fitting discharge formula at different temperatures, the results show that extra contribution of I{sub cp} traps at high voltage are inmore » fact high-k bulk shallow traps. This is also verified through a comparison of different interlayer thicknesses and different Ti{sub x}N{sub 1−x} metal gate concentrations. Next, N{sub T}-V{sub high} {sub level} characteristic curves with different falling times (t{sub falling} {sub time}) and base level times (t{sub base} {sub level}) show that extra contribution of I{sub cp} traps decrease with an increase in t{sub falling} {sub time}. By fitting discharge formula for different t{sub falling} {sub time}, the results show that electrons trapped in high-k bulk shallow traps first discharge to the channel and then to source and drain during t{sub falling} {sub time}. This current cannot be measured by the charge pumping technique. Subsequent measurements of N{sub T} by charge pumping technique at t{sub base} {sub level} reveal a remainder of electrons trapped in high-k bulk shallow traps.« less

Hole-exciton interaction induced high field decay of magneto-electroluminescence in Alq3-based organic light-emitting diodes at room temperature

NASA Astrophysics Data System (ADS)

Zhang, Tingting; Holford, D. F.; Gu, Hang; Kreouzis, T.; Zhang, Sijie; Gillin, W. P.

2016-01-01

The magnetic field effects on the electroluminescence of aluminium tris-(8-hydroxyqinoline) (Alq3) based organic light emitting diodes have been investigated by varying the electron/hole ratio in the emissive layer. Experimental results reveal that a negative high field effect in the magneto-electroluminescence (MEL) can be found in devices with very low triplet exciton concentration at room temperature. This suggests triplet-triplet annihilation cannot be used to explain the negative high field MEL in the Alq3 system. Our results suggest that hole-exciton interaction may be the origin of the negative high field MEL and also, in parallel with this interaction, there is also the more common positive high field process occurring which has been tentatively attributed to electron-exciton interactions. The competition between these different processes decides the final shape of the MEL at high fields.

Multiple paths of electron flow to current in microbial electrolysis cells fed with low and high concentrations of propionate.

PubMed

Hari, Ananda Rao; Katuri, Krishna P; Gorron, Eduardo; Logan, Bruce E; Saikaly, Pascal E

2016-07-01

Microbial electrolysis cells (MECs) provide a viable approach for bioenergy generation from fermentable substrates such as propionate. However, the paths of electron flow during propionate oxidation in the anode of MECs are unknown. Here, the paths of electron flow involved in propionate oxidation in the anode of two-chambered MECs were examined at low (4.5 mM) and high (36 mM) propionate concentrations. Electron mass balances and microbial community analysis revealed that multiple paths of electron flow (via acetate/H2 or acetate/formate) to current could occur simultaneously during propionate oxidation regardless of the concentration tested. Current (57-96 %) was the largest electron sink and methane (0-2.3 %) production was relatively unimportant at both concentrations based on electron balances. At a low propionate concentration, reactors supplemented with 2-bromoethanesulfonate had slightly higher coulombic efficiencies than reactors lacking this methanogenesis inhibitor. However, an opposite trend was observed at high propionate concentration, where reactors supplemented with 2-bromoethanesulfonate had a lower coulombic efficiency and there was a greater percentage of electron loss (23.5 %) to undefined sinks compared to reactors without 2-bromoethanesulfonate (11.2 %). Propionate removal efficiencies were 98 % (low propionate concentration) and 78 % (high propionate concentration). Analysis of 16S rRNA gene pyrosequencing revealed the dominance of sequences most similar to Geobacter sulfurreducens PCA and G. sulfurreducens subsp. ethanolicus. Collectively, these results provide new insights on the paths of electron flow during propionate oxidation in the anode of MECs fed with low and high propionate concentrations.

Quasi-Two-Dimensional Magnetism in Co-Based Shandites

NASA Astrophysics Data System (ADS)

Kassem, Mohamed A.; Tabata, Yoshikazu; Waki, Takeshi; Nakamura, Hiroyuki

2016-06-01

We report quasi-two-dimensional (Q2D) itinerant electron magnetism in the layered Co-based shandites. Comprehensive magnetization measurements were performed using single crystals of Co3Sn2-xInxS2 (0 ≤ x ≤ 2) and Co3-yFeySn2S2 (0 ≤ y ≤ 0.5). The magnetic parameters of both systems; the Curie temperature TC, effective moment peff and spontaneous moment ps; exhibit almost identical variations against the In- and Fe-concentrations, indicating significance of the electron count on the magnetism in the Co-based shandite. The ferromagnetic-nonmagnetic quantum phase transition is found around xc ˜ 0.8. Analysis based on the extended Q2D spin fluctuation theory clearly reveals the highly Q2D itinerant electron character of the ferromagnetism in the Co-based shandites.

Balancing the Electron and Hole Transfer for Efficient Quantum Dot Light-Emitting Diodes by Employing a Versatile Organic Electron-Blocking Layer.

PubMed

Jin, Xiao; Chang, Chun; Zhao, Weifeng; Huang, Shujuan; Gu, Xiaobing; Zhang, Qin; Li, Feng; Zhang, Yubao; Li, Qinghua

2018-05-09

The electron-blocking layer (EBL) is important to balance the charge carrier transfer and achieve highly efficient quantum dot light-emitting diodes (QLEDs). Here, we report the utilization of a soluble tert-butyldimethylsilyl chloride-modified poly( p-phenylene benzobisoxazole) (TBS-PBO) as an EBL for simultaneous good charge carrier transfer balance while maintaining a high current density. We show that the versatile TBS-PBO blocks excess electron injection into the quantum dots (QDs), thus leading to better charge carrier transfer balance. It also restricts the undesired QD-to-EBL electron-transfer process, which preserves the superior emission capabilities of the emitter. As a consequence, the TBS-PBO device delivers an external quantum efficiency (EQE) maximum of 16.7% along with a remarkable current density as high as 139 mA/cm 2 with a brightness of 5484 cd/m 2 . The current density of our device is higher than those of insulator EBL-based devices because of the higher conductivity of the TBS-PBO versus insulator EBL, thus helping achieve high luminance values ranging from 1414 to 20 000 cd/cm 2 with current densities ranging from 44 to 648 mA/cm 2 and EQE > 14%. We believe that these unconventional features of the present TBS-PBO-based QLEDs will expand the wide use of TBS-PBO as buffer layers in other advanced QLED applications.

Reversible Electrochemical Lithium-Ion Insertion into the Rhenium Cluster Chalcogenide-Halide Re6Se8Cl2.

PubMed

Bruck, Andrea M; Yin, Jiefu; Tong, Xiao; Takeuchi, Esther S; Takeuchi, Kenneth J; Szczepura, Lisa F; Marschilok, Amy C

2018-05-07

The cluster-based material Re 6 Se 8 Cl 2 is a two-dimensional ternary material with cluster-cluster bonding across the a and b axes capable of multiple electron transfer accompanied by ion insertion across the c axis. The Li/Re 6 Se 8 Cl 2 system showed reversible electron transfer from 1 to 3 electron equivalents (ee) at high current densities (88 mA/g). Upon cycling to 4 ee, there was evidence of capacity degradation over 50 cycles associated with the formation of an organic solid-electrolyte interface (between 1.45 and 1 V vs Li/Li + ). This investigation highlights the ability of cluster-based materials with two-dimensional cluster bonding to be used in applications such as energy storage, showing structural stability and high rate capability.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Moreno, Gilbert; Bennion, Kevin

This project will develop thermal management strategies to enable efficient and high-temperature wide-bandgap (WBG)-based power electronic systems (e.g., emerging inverter and DC-DC converter designs). The use of WBG-based devices in automotive power electronics will improve efficiency and increase driving range in electric-drive vehicles; however, the implementation of this technology is limited, in part, due to thermal issues. This project will develop system-level thermal models to determine the thermal limitations of current automotive power modules under elevated device temperature conditions. Additionally, novel cooling concepts and material selection will be evaluated to enable high-temperature silicon and WBG devices in power electronics components.more » WBG devices (silicon carbide [SiC], gallium nitride [GaN]) promise to increase efficiency, but will be driven as hard as possible. This creates challenges for thermal management and reliability.« less

An electron linac-based system for BNCT of shallow tumors

NASA Astrophysics Data System (ADS)

Farhad Masoudi, S.; Ghiasi, Hedieh; Harif, Maryam; Rasouli, Fatemeh S.

2018-07-01

Although BNCT has been in existence since the 1950s, it continues to be of special significant and interest for wide groups of researchers. Recent studies, focused on investigating appropriate neutron sources as alternatives for nuclear reactors, revealed the high potential of electron linac-based facilities to improve the efficiency of this treatment method. The present simulation study has been devoted to both designing an optimized and geometrically simple target to be used as a photoneutron source based on an electron linac and designing a configuration composed of arrangement of materials to generate an appropriate beam for BNCT of shallow tumors considering the widely accepted criteria for pre-clinical survey. It has been found that the behavior of photoneutrons' current and their average energy on the surface of the target is independent of the incident energy. Accordingly, we managed to present a formula to predict the average energy of photoneutrons knowing the electron energy to an acceptable approximation avoiding Monte Carlo simulations. Considering the conflict between the beam intensity and its purity in the whole beam designing process, an optimized beam shaping assembly for electron linac of 18 MeV/ mA has been proposed. These results in essence confirm the ability of these sources for BNCT of shallow tumors and are therefore encouraging for further studies. Furthermore, the results show that this configuration, which the corresponding beam fulfills all the medical requirements, is also usable for electron linacs of other energies. This can be of high importance in practical point of view.

High Density Polymer-Based Integrated Electgrode Array

DOEpatents

Maghribi, Mariam N.; Krulevitch, Peter A.; Davidson, James Courtney; Hamilton, Julie K.

2006-04-25

A high density polymer-based integrated electrode apparatus that comprises a central electrode body and a multiplicity of arms extending from the electrode body. The central electrode body and the multiplicity of arms are comprised of a silicone material with metal features in said silicone material that comprise electronic circuits.

Radiation tolerant compact image sensor using CdTe photodiode and field emitter array (Conference Presentation)

NASA Astrophysics Data System (ADS)

Masuzawa, Tomoaki; Neo, Yoichiro; Mimura, Hidenori; Okamoto, Tamotsu; Nagao, Masayoshi; Akiyoshi, Masafumi; Sato, Nobuhiro; Takagi, Ikuji; Tsuji, Hiroshi; Gotoh, Yasuhito

2016-10-01

A growing demand on incident detection is recognized since the Great East Japan Earthquake and successive accidents in Fukushima nuclear power plant in 2011. Radiation tolerant image sensors are powerful tools to collect crucial information at initial stages of such incidents. However, semiconductor based image sensors such as CMOS and CCD have limited tolerance to radiation exposure. Image sensors used in nuclear facilities are conventional vacuum tubes using thermal cathodes, which have large size and high power consumption. In this study, we propose a compact image sensor composed of a CdTe-based photodiode and a matrix-driven Spindt-type electron beam source called field emitter array (FEA). A basic principle of FEA-based image sensors is similar to conventional Vidicon type camera tubes, but its electron source is replaced from a thermal cathode to FEA. The use of a field emitter as an electron source should enable significant size reduction while maintaining high radiation tolerance. Current researches on radiation tolerant FEAs and development of CdTe based photoconductive films will be presented.

Analytical modeling and numerical simulation of the short-wave infrared electron-injection detectors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Movassaghi, Yashar; Fathipour, Morteza; Fathipour, Vala

2016-03-21

This paper describes comprehensive analytical and simulation models for the design and optimization of the electron-injection based detectors. The electron-injection detectors evaluated here operate in the short-wave infrared range and utilize a type-II band alignment in InP/GaAsSb/InGaAs material system. The unique geometry of detectors along with an inherent negative-feedback mechanism in the device allows for achieving high internal avalanche-free amplifications without any excess noise. Physics-based closed-form analytical models are derived for the detector rise time and dark current. Our optical gain model takes into account the drop in the optical gain at high optical power levels. Furthermore, numerical simulation studiesmore » of the electrical characteristics of the device show good agreement with our analytical models as well experimental data. Performance comparison between devices with different injector sizes shows that enhancement in the gain and speed is anticipated by reducing the injector size. Sensitivity analysis for the key detector parameters shows the relative importance of each parameter. The results of this study may provide useful information and guidelines for development of future electron-injection based detectors as well as other heterojunction photodetectors.« less

An electron beam linear scanning mode for industrial limited-angle nano-computed tomography.

PubMed

Wang, Chengxiang; Zeng, Li; Yu, Wei; Zhang, Lingli; Guo, Yumeng; Gong, Changcheng

2018-01-01

Nano-computed tomography (nano-CT), which utilizes X-rays to research the inner structure of some small objects and has been widely utilized in biomedical research, electronic technology, geology, material sciences, etc., is a high spatial resolution and non-destructive research technique. A traditional nano-CT scanning model with a very high mechanical precision and stability of object manipulator, which is difficult to reach when the scanned object is continuously rotated, is required for high resolution imaging. To reduce the scanning time and attain a stable and high resolution imaging in industrial non-destructive testing, we study an electron beam linear scanning mode of nano-CT system that can avoid mechanical vibration and object movement caused by the continuously rotated object. Furthermore, to further save the scanning time and study how small the scanning range could be considered with acceptable spatial resolution, an alternating iterative algorithm based on ℓ 0 minimization is utilized to limited-angle nano-CT reconstruction problem with the electron beam linear scanning mode. The experimental results confirm the feasibility of the electron beam linear scanning mode of nano-CT system.

An electron beam linear scanning mode for industrial limited-angle nano-computed tomography

NASA Astrophysics Data System (ADS)

Wang, Chengxiang; Zeng, Li; Yu, Wei; Zhang, Lingli; Guo, Yumeng; Gong, Changcheng

2018-01-01

Nano-computed tomography (nano-CT), which utilizes X-rays to research the inner structure of some small objects and has been widely utilized in biomedical research, electronic technology, geology, material sciences, etc., is a high spatial resolution and non-destructive research technique. A traditional nano-CT scanning model with a very high mechanical precision and stability of object manipulator, which is difficult to reach when the scanned object is continuously rotated, is required for high resolution imaging. To reduce the scanning time and attain a stable and high resolution imaging in industrial non-destructive testing, we study an electron beam linear scanning mode of nano-CT system that can avoid mechanical vibration and object movement caused by the continuously rotated object. Furthermore, to further save the scanning time and study how small the scanning range could be considered with acceptable spatial resolution, an alternating iterative algorithm based on ℓ0 minimization is utilized to limited-angle nano-CT reconstruction problem with the electron beam linear scanning mode. The experimental results confirm the feasibility of the electron beam linear scanning mode of nano-CT system.

Efficient planar Sb2S3 solar cells using a low-temperature solution-processed tin oxide electron conductor.

PubMed

Lei, Hongwei; Yang, Guang; Guo, Yaxiong; Xiong, Liangbin; Qin, Pingli; Dai, Xin; Zheng, Xiaolu; Ke, Weijun; Tao, Hong; Chen, Zhao; Li, Borui; Fang, Guojia

2016-06-28

Efficient planar antimony sulfide (Sb2S3) heterojunction solar cells have been made using chemical bath deposited (CBD) Sb2S3 as the absorber, low-temperature solution-processed tin oxide (SnO2) as the electron conductor and poly (3-hexylthiophene) (P3HT) as the hole conductor. A solar conversion efficiency of 2.8% was obtained at 1 sun illumination using a planar device consisting of F-doped SnO2 substrate/SnO2/CBD-Sb2S3/P3HT/Au, whereas the solar cells based on a titanium dioxide (TiO2) electron conductor exhibited a power conversion efficiency of 1.9%. Compared with conventional Sb2S3 sensitized solar cells, the high-temperature processed mesoscopic TiO2 scaffold is no longer needed. More importantly, a low-temperature solution-processed SnO2 layer was introduced for electron transportation to substitute the high-temperature sintered dense blocking TiO2 layer. Our planar solar cells not only have simple geometry with fewer steps to fabricate but also show enhanced performance. The higher efficiency of planar Sb2S3 solar cell devices based on a SnO2 electron conductor is attributed to their high transparency, uniform surface, efficient electron transport properties of SnO2, suitable energy band alignment, and reduced recombination at the interface of SnO2/Sb2S3.

Stretchable electronics for wearable and high-current applications

NASA Astrophysics Data System (ADS)

Hilbich, Daniel; Shannon, Lesley; Gray, Bonnie L.

2016-04-01

Advances in the development of novel materials and fabrication processes are resulting in an increased number of flexible and stretchable electronics applications. This evolving technology enables new devices that are not readily fabricated using traditional silicon processes, and has the potential to transform many industries, including personalized healthcare, consumer electronics, and communication. Fabrication of stretchable devices is typically achieved through the use of stretchable polymer-based conductors, or more rigid conductors, such as metals, with patterned geometries that can accommodate stretching. Although the application space for stretchable electronics is extensive, the practicality of these devices can be severely limited by power consumption and cost. Moreover, strict process flows can impede innovation that would otherwise enable new applications. In an effort to overcome these impediments, we present two modified approaches and applications based on a newly developed process for stretchable and flexible electronics fabrication. This includes the development of a metallization pattern stamping process allowing for 1) stretchable interconnects to be directly integrated with stretchable/wearable fabrics, and 2) a process variation enabling aligned multi-layer devices with integrated ferromagnetic nanocomposite polymer components enabling a fully-flexible electromagnetic microactuator for large-magnitude magnetic field generation. The wearable interconnects are measured, showing high conductivity, and can accommodate over 20% strain before experiencing conductive failure. The electromagnetic actuators have been fabricated and initial measurements show well-aligned, highly conductive, isolated metal layers. These two applications demonstrate the versatility of the newly developed process and suggest potential for its furthered use in stretchable electronics and MEMS applications.

Characterizing bonding patterns in diradicals and triradicals by density-based wave function analysis: A uniform approach

DOE Office of Scientific and Technical Information (OSTI.GOV)

Orms, Natalie; Rehn, Dirk; Dreuw, Andreas

Density-based wave function analysis enables unambiguous comparisons of electronic structure computed by different methods and removes ambiguity of orbital choices. Here, we use this tool to investigate the performance of different spin-flip methods for several prototypical diradicals and triradicals. In contrast to previous calibration studies that focused on energy gaps between high and low spin-states, we focus on the properties of the underlying wave functions, such as the number of effectively unpaired electrons. Comparison of different density functional and wave function theory results provides insight into the performance of the different methods when applied to strongly correlated systems such asmore » polyradicals. We also show that canonical molecular orbitals for species like large copper-containing diradicals fail to correctly represent the underlying electronic structure due to highly non-Koopmans character, while density-based analysis of the same wave function delivers a clear picture of bonding pattern.« less

Absorption by DNA single strands of adenine isolated in vacuo: The role of multiple chromophores

NASA Astrophysics Data System (ADS)

Nielsen, Lisbeth Munksgaard; Pedersen, Sara Øvad; Kirketerp, Maj-Britt Suhr; Nielsen, Steen Brøndsted

2012-02-01

The degree of electronic coupling between DNA bases is a topic being up for much debate. Here we report on the intrinsic electronic properties of isolated DNA strands in vacuo free of solvent, which is a good starting point for high-level excited states calculations. Action spectra of DNA single strands of adenine reveal sign of exciton coupling between stacked bases from blueshifted absorption bands (˜3 nm) relative to that of the dAMP mononucleotide (one adenine base). The bands are blueshifted by about 10 nm compared to those of solvated strands, which is a shift similar to that for the adenine molecule and the dAMP mononucleotide. Desolvation has little effect on the bandwidth, which implies that inhomogenous broadening of the absorption bands in aqueous solution is of minor importance compared to, e.g., conformational disorder. Finally, at high photon energies, internal conversion competes with electron detachment since dissociation of the bare photoexcited ions on the microsecond time scale is measured.

Characterizing bonding patterns in diradicals and triradicals by density-based wave function analysis: A uniform approach

DOE PAGES

Orms, Natalie; Rehn, Dirk; Dreuw, Andreas; ...

2017-12-21

Density-based wave function analysis enables unambiguous comparisons of electronic structure computed by different methods and removes ambiguity of orbital choices. Here, we use this tool to investigate the performance of different spin-flip methods for several prototypical diradicals and triradicals. In contrast to previous calibration studies that focused on energy gaps between high and low spin-states, we focus on the properties of the underlying wave functions, such as the number of effectively unpaired electrons. Comparison of different density functional and wave function theory results provides insight into the performance of the different methods when applied to strongly correlated systems such asmore » polyradicals. We also show that canonical molecular orbitals for species like large copper-containing diradicals fail to correctly represent the underlying electronic structure due to highly non-Koopmans character, while density-based analysis of the same wave function delivers a clear picture of bonding pattern.« less

Scalable quantum computing based on stationary spin qubits in coupled quantum dots inside double-sided optical microcavities

NASA Astrophysics Data System (ADS)

Wei, Hai-Rui; Deng, Fu-Guo

2014-12-01

Quantum logic gates are the key elements in quantum computing. Here we investigate the possibility of achieving a scalable and compact quantum computing based on stationary electron-spin qubits, by using the giant optical circular birefringence induced by quantum-dot spins in double-sided optical microcavities as a result of cavity quantum electrodynamics. We design the compact quantum circuits for implementing universal and deterministic quantum gates for electron-spin systems, including the two-qubit CNOT gate and the three-qubit Toffoli gate. They are compact and economic, and they do not require additional electron-spin qubits. Moreover, our devices have good scalability and are attractive as they both are based on solid-state quantum systems and the qubits are stationary. They are feasible with the current experimental technology, and both high fidelity and high efficiency can be achieved when the ratio of the side leakage to the cavity decay is low.

Scalable quantum computing based on stationary spin qubits in coupled quantum dots inside double-sided optical microcavities.

PubMed

Wei, Hai-Rui; Deng, Fu-Guo

2014-12-18

Quantum logic gates are the key elements in quantum computing. Here we investigate the possibility of achieving a scalable and compact quantum computing based on stationary electron-spin qubits, by using the giant optical circular birefringence induced by quantum-dot spins in double-sided optical microcavities as a result of cavity quantum electrodynamics. We design the compact quantum circuits for implementing universal and deterministic quantum gates for electron-spin systems, including the two-qubit CNOT gate and the three-qubit Toffoli gate. They are compact and economic, and they do not require additional electron-spin qubits. Moreover, our devices have good scalability and are attractive as they both are based on solid-state quantum systems and the qubits are stationary. They are feasible with the current experimental technology, and both high fidelity and high efficiency can be achieved when the ratio of the side leakage to the cavity decay is low.

Tape transfer printing of a liquid metal alloy for stretchable RF electronics.

PubMed

Jeong, Seung Hee; Hjort, Klas; Wu, Zhigang

2014-09-03

In order to make conductors with large cross sections for low impedance radio frequency (RF) electronics, while still retaining high stretchability, liquid-alloy-based microfluidic stretchable electronics offers stretchable electronic systems the unique opportunity to combine various sensors on our bodies or organs with high-quality wireless communication with the external world (devices/systems), without sacrificing enhanced user comfort. This microfluidic approach, based on printed circuit board technology, allows large area processing of large cross section conductors and robust contacts, which can handle a lot of stretching between the embedded rigid active components and the surrounding system. Although it provides such benefits, further development is needed to realize its potential as a high throughput, cost-effective process technology. In this paper, tape transfer printing is proposed to supply a rapid prototyping batch process at low cost, albeit at a low resolution of 150 μm. In particular, isolated patterns can be obtained in a simple one-step process. Finally, a stretchable radio frequency identification (RFID) tag is demonstrated. The measured results show the robustness of the hybrid integrated system when the tag is stretched at 50% for 3000 cycles.

All-Optical Electron Injector

NASA Astrophysics Data System (ADS)

Umstadter, Donald

2002-04-01

Conventional electron acceleration at a place like SLAC needs miles to boost particles up to 50 GeV energies by feeding microwaves into a succession of cavities. In recent years we have been developing alternative acceleration concepts, based on lasers focused into plasmas, that might someday do the job in a much smaller space without the use of cavities. Our near term goal is to produce a first stage accelerator that outputs electron beams with lower energy but with properties that are more suitable for x-ray sources, such as those based on Compton scattering or the proposed linear synchrotrons at SLAC and DESY. In the plasma wakefield approach, for example, a terawatt laser beam is focused onto a gas jet, ionizing it and driving plasma waves that move at relativistic speeds. If timed just right, electrons in the plasma can surf the plasma waves to high speeds, as high as 100 MeV in the space of only a millimeter. NanoCoulombs of charge have been accelerated in well-collimated beams (1-degree divergence angle). One problem with this concept is the mismatch between the electron source (sometimes an external photocathode, sometimes an uncontrolled cloud of electrons from the plasma itself) and the incoming laser pulse. We will be reporting methods for generating electrons in a controllable way, namely the use of a pair of crossed laser beams which position, heat, and synchronize the insertion of electrons into the plasma wave. We show that this "all-optical injection" increases the number and energy of energetic electrons as compared with use of only one laser beam. It has been shown theoretically that this approach can ultimately be used to reduce the electron energy spread to a few percent. Besides potential applications to particle physics and x-ray lasers, high gradient acceleration schemes are also expected to benefit the production of medical radioisotopes and the ignition of thermonuclear fusion reactions.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sun, Yiyi; Wang, Junli; Qi, Shengli

In this report, a series of composite films consisting of polyimide as the matrix and multi-wall carbon nanotubes as the filler (PI/MWCNTs) were prepared in a water-based method with the use of triethylamine. Their dielectric properties were tested under frequency of between 100 Hz and 10 MHz, and it was revealed that the permittivity value behaved interestingly around the percolation threshold (8.01% in volume). The water-based method ensured that fillers had high dispersibility in the matrix before percolation, which led to a relatively high dielectric constant (284.28). However, the overlapping caused by excess MWCNTs created pathways for electrons inside the matrix, turningmore » the permittivity to negative. The former phenomenon was highly congruent with the percolation power law, while the latter could be explained by the Drude Model. AC conductivity was measured for more supportive information. Additionally, scanning electron microscopy and transmission electron microscopy were employed to record MWCNTs' microscopic distribution and morphology at the percolation threshold.« less

The Japanese Positron Factory

NASA Astrophysics Data System (ADS)

Okada, S.; Sunaga, H.; Kaneko, H.; Takizawa, H.; Kawasuso, A.; Yotsumoto, K.; Tanaka, R.

1999-06-01

The Positron Factory has been planned at Japan Atomic Energy Research Institute (JAERI). The factory is expected to produce linac-based monoenergetic positron beams having world-highest intensities of more than 1010e+/sec, which will be applied for R&D of materials science, biotechnology and basic physics & chemistry. In this article, results of the design studies are demonstrated for the following essential components of the facilities: 1) Conceptual design of a high-power electron linac with 100 MeV in beam energy and 100 kW in averaged beam power, 2) Performance tests of the RF window in the high-power klystron and of the electron beam window, 3) Development of a self-driven rotating electron-to-positron converter and the performance tests, 4) Proposal of multi-channel beam generation system for monoenergetic positrons, with a series of moderator assemblies based on a newly developed Monte Carlo simulation and the demonstrative experiment, 5) Proposal of highly efficient moderator structures, 6) Conceptual design of a local shield to suppress the surrounding radiation and activation levels.

Tunable High-Intensity Electron Bunch Train Production Based on Nonlinear Longitudinal Space Charge Oscillation

NASA Astrophysics Data System (ADS)

Zhang, Zhen; Yan, Lixin; Du, Yingchao; Zhou, Zheng; Su, Xiaolu; Zheng, Lianmin; Wang, Dong; Tian, Qili; Wang, Wei; Shi, Jiaru; Chen, Huaibi; Huang, Wenhui; Gai, Wei; Tang, Chuanxiang

2016-05-01

High-intensity trains of electron bunches with tunable picosecond spacing are produced and measured experimentally with the goal of generating terahertz (THz) radiation. By imposing an initial density modulation on a relativistic electron beam and controlling the charge density over the beam propagation, density spikes of several-hundred-ampere peak current in the temporal profile, which are several times higher than the initial amplitudes, have been observed for the first time. We also demonstrate that the periodic spacing of the bunch train can be varied continuously either by tuning launching phase of a radio-frequency gun or by tuning the compression of a downstream magnetic chicane. Narrow-band coherent THz radiation from the bunch train was also measured with μ J -level energies and tunable central frequency of the spectrum in the range of ˜0.5 to 1.6 THz. Our results pave the way towards generating mJ-level narrow-band coherent THz radiation and driving high-gradient wakefield-based acceleration.

Tunable High-Intensity Electron Bunch Train Production Based on Nonlinear Longitudinal Space Charge Oscillation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Zhen; Yan, Lixin; Du, Yingchao

2016-05-05

High-intensity trains of electron bunches with tunable picosecond spacing are produced and measured experimentally with the goal of generating terahertz (THz) radiation. By imposing an initial density modulation on a relativistic electron beam and controlling the charge density over the beam propagation, density spikes of several-hundred-ampere peak current in the temporal profile, which are several times higher than the initial amplitudes, have been observed for the first time. We also demonstrate that the periodic spacing of the bunch train can be varied continuously either by tuning launching phase of a radiofrequency gun or by tuning the compression of a downstreammore » magnetic chicane. Narrow-band coherent THz radiation from the bunch train was also measured with μJ-level energies and tunable central frequency of the spectrum in the range of ~0.5 to 1.6 THz. Our results pave the way towards generating mJ-level narrow-band coherent THz radiation and driving high-gradient wakefield-based acceleration.« less

Infrared photodetectors based on graphene van der Waals heterostructures

NASA Astrophysics Data System (ADS)

Ryzhii, V.; Ryzhii, M.; Svintsov, D.; Leiman, V.; Mitin, V.; Shur, M. S.; Otsuji, T.

2017-08-01

We propose and evaluate the graphene layer (GL) infrared photodetectors (GLIPs) based on the van der Waals (vdW) heterostructures with the radiation absorbing GLs. The operation of the GLIPs is associated with the electron photoexcitation from the GL valence band to the continuum states above the inter-GL barriers (either via tunneling or direct transitions to the continuum states). Using the developed device model, we calculate the photodetector characteristics as functions of the GL-vdW heterostructure parameters. We show that due to a relatively large efficiency of the electron photoexcitation and low capture efficiency of the electrons propagating over the barriers in the inter-GL layers, GLIPs should exhibit the elevated photoelectric gain and detector responsivity as well as relatively high detectivity. The possibility of high-speed operation, high conductivity, transparency of the GLIP contact layers, and the sensitivity to normally incident IR radiation provides additional potential advantages in comparison with other IR photodetectors. In particular, the proposed GLIPs can compete with unitravelling-carrier photodetectors.

Electronic and optoelectronic device applications based on ReS2

NASA Astrophysics Data System (ADS)

Liu, Erfu; Long, Mingsheng; Wang, Yaojia; Pan, Yiming; Ho, Chinghwa; Wang, Baigeng; Miao, Feng

Rhenium disulfide (ReS2) is a unique semiconducting TMD with distorted 1T structure and weak interlayer coupling. We have previously investigated its in-plane anisotropic property and electronic applications on FET and digital inverters. In this talk, we will present high responsivity phototransistors based on few-layer ReS2. Depending on the back gate voltage, source drain bias and incident optical light intensity, the maximum attainable photoresponsivity can reach as high as 88,600 A W-1, which is one of the highest value among individual two-dimensional materials with similar device structures. Such high photoresponsivity is attributed to the increased light absorption as well as the gain enhancement due to the existence of trap states in the few-layer ReS2 flakes. The existence of trap states is proved by temperature dependent transport measurements. It further enables the detection of weak signals. Our studies underscore ReS2 as a promising material for future electronic and sensitive optoelectronic applications.

Resonant tunneling assisted propagation and amplification of plasmons in high electron mobility transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bhardwaj, Shubhendu; Sensale-Rodriguez, Berardi; Xing, Huili Grace

A rigorous theoretical and computational model is developed for the plasma-wave propagation in high electron mobility transistor structures with electron injection from a resonant tunneling diode at the gate. We discuss the conditions in which low-loss and sustainable plasmon modes can be supported in such structures. The developed analytical model is used to derive the dispersion relation for these plasmon-modes. A non-linear full-wave-hydrodynamic numerical solver is also developed using a finite difference time domain algorithm. The developed analytical solutions are validated via the numerical solution. We also verify previous observations that were based on a simplified transmission line model. Itmore » is shown that at high levels of negative differential conductance, plasmon amplification is indeed possible. The proposed rigorous models can enable accurate design and optimization of practical resonant tunnel diode-based plasma-wave devices for terahertz sources, mixers, and detectors, by allowing a precise representation of their coupling when integrated with other electromagnetic structures.« less

Isochoric heating and strong blast wave formation driven by fast electrons in solid-density targets

NASA Astrophysics Data System (ADS)

Santos, J. J.; Vauzour, B.; Touati, M.; Gremillet, L.; Feugeas, J.-L.; Ceccotti, T.; Bouillaud, R.; Deneuville, F.; Floquet, V.; Fourment, C.; Hadj-Bachir, M.; Hulin, S.; Morace, A.; Nicolaï, Ph; d'Oliveira, P.; Reau, F.; Samaké, A.; Tcherbakoff, O.; Tikhonchuk, V. T.; Veltcheva, M.; Batani, D.

2017-10-01

We experimentally investigate the fast (< 1 {ps}) isochoric heating of multi-layer metallic foils and subsequent high-pressure hydrodynamics induced by energetic electrons driven by high-intensity, high-contrast laser pulses. The early-time temperature profile inside the target is measured from the streaked optical pyrometry of the target rear side. This is further characterized from benchmarked simulations of the laser-target interaction and the fast electron transport. Despite a modest laser energy (< 1 {{J}}), the early-time high pressures and associated gradients launch inwards a strong compression wave developing over ≳ 10 ps into a ≈ 140 {Mbar} blast wave, according to hydrodynamic simulations, consistent with our measurements. These experimental and numerical findings pave the way to a short-pulse-laser-based platform dedicated to high-energy-density physics studies.

Oxide-based thin film transistors for flexible electronics

NASA Astrophysics Data System (ADS)

He, Yongli; Wang, Xiangyu; Gao, Ya; Hou, Yahui; Wan, Qing

2018-01-01

The continuous progress in thin film materials and devices has greatly promoted the development in the field of flexible electronics. As one of the most common thin film devices, thin film transistors (TFTs) are significant building blocks for flexible platforms. Flexible oxide-based TFTs are well compatible with flexible electronic systems due to low process temperature, high carrier mobility, and good uniformity. The present article is a review of the recent progress and major trends in the field of flexible oxide-based thin film transistors. First, an introduction of flexible electronics and flexible oxide-based thin film transistors is given. Next, we introduce oxide semiconductor materials and various flexible oxide-based TFTs classified by substrate materials including polymer plastics, paper sheets, metal foils, and flexible thin glass. Afterwards, applications of flexible oxide-based TFTs including bendable sensors, memories, circuits, and displays are presented. Finally, we give conclusions and a prospect for possible development trends. Project supported in part by the National Science Foundation for Distinguished Young Scholars of China (No. 61425020), in part by the National Natural Science Foundation of China (No. 11674162).

n-Channel semiconductor materials design for organic complementary circuits.

PubMed

Usta, Hakan; Facchetti, Antonio; Marks, Tobin J

2011-07-19

Organic semiconductors have unique properties compared to traditional inorganic materials such as amorphous or crystalline silicon. Some important advantages include their adaptability to low-temperature processing on flexible substrates, low cost, amenability to high-speed fabrication, and tunable electronic properties. These features are essential for a variety of next-generation electronic products, including low-power flexible displays, inexpensive radio frequency identification (RFID) tags, and printable sensors, among many other applications. Accordingly, the preparation of new materials based on π-conjugated organic molecules or polymers has been a central scientific and technological research focus over the past decade. Currently, p-channel (hole-transporting) materials are the leading class of organic semiconductors. In contrast, high-performance n-channel (electron-transporting) semiconductors are relatively rare, but they are of great significance for the development of plastic electronic devices such as organic field-effect transistors (OFETs). In this Account, we highlight the advances our team has made toward realizing moderately and highly electron-deficient n-channel oligomers and polymers based on oligothiophene, arylenediimide, and (bis)indenofluorene skeletons. We have synthesized and characterized a "library" of structurally related semiconductors, and we have investigated detailed structure-property relationships through optical, electrochemical, thermal, microstructural (both single-crystal and thin-film), and electrical measurements. Our results reveal highly informative correlations between structural parameters at various length scales and charge transport properties. We first discuss oligothiophenes functionalized with perfluoroalkyl and perfluoroarene substituents, which represent the initial examples of high-performance n-channel semiconductors developed in this project. The OFET characteristics of these compounds are presented with an emphasis on structure-property relationships. We then examine the synthesis and properties of carbonyl-functionalized oligomers, which constitute second-generation n-channel oligothiophenes, in both vacuum- and solution-processed FETs. These materials have high carrier mobilities and good air stability. In parallel, exceptionally electron-deficient cyano-functionalized arylenediimide derivatives are discussed as early examples of thermodynamically air-stable, high-performance n-channel semiconductors; they exhibit record electron mobilities of up to 0.64 cm(2)/V·s. Furthermore, we provide an overview of highly soluble ladder-type macromolecular semiconductors as OFET components, which combine ambient stability with solution processibility. A high electron mobility of 0.16 cm(2)/V·s is obtained under ambient conditions for solution-processed films. Finally, examples of polymeric n-channel semiconductors with electron mobilities as high as 0.85 cm(2)/V·s are discussed; these constitute an important advance toward fully printed polymeric electronic circuitry. Density functional theory (DFT) computations reveal important trends in molecular physicochemical and semiconducting properties, which, when combined with experimental data, shed new light on molecular charge transport characteristics. Our data provide the basis for a fundamental understanding of charge transport in high-performance n-channel organic semiconductors. Moreover, our results provide a road map for developing functional, complementary organic circuitry, which requires combining p- and n-channel transistors.

Model-based confirmation of alternative substrates of mitochondrial electron transport chain.

PubMed

Kleessen, Sabrina; Araújo, Wagner L; Fernie, Alisdair R; Nikoloski, Zoran

2012-03-30

Discrimination of metabolic models based on high throughput metabolomics data, reflecting various internal and external perturbations, is essential for identifying the components that contribute to the emerging behavior of metabolic processes. Here, we investigate 12 different models of the mitochondrial electron transport chain (ETC) in Arabidopsis thaliana during dark-induced senescence in order to elucidate the alternative substrates to this metabolic pathway. Our findings demonstrate that the coupling of the proposed computational approach, based on dynamic flux balance analysis, with time-resolved metabolomics data results in model-based confirmations of the hypotheses that, during dark-induced senescence in Arabidopsis, (i) under conditions where the main substrate for the ETC are not fully available, isovaleryl-CoA dehydrogenase and 2-hydroxyglutarate dehydrogenase are able to donate electrons to the ETC, (ii) phytanoyl-CoA does not act even as an indirect substrate of the electron transfer flavoprotein/electron-transfer flavoprotein:ubiquinone oxidoreductase complex, and (iii) the mitochondrial γ-aminobutyric acid transporter has functional significance in maintaining mitochondrial metabolism. Our study provides a basic framework for future in silico studies of alternative pathways in mitochondrial metabolism under extended darkness whereby the role of its components can be computationally discriminated based on available molecular profile data.

High efficiency vapor-fed AMTEC system for direct conversion. Final report

DOE Office of Scientific and Technical Information (OSTI.GOV)

Anderson, W.G.; Bland, J.J.

1997-05-23

The Alkali Metal Thermal to Electric Converter (AMTEC) is a high temperature, high efficiency system for converting thermal to electrical energy, with no moving parts. It is based on the unique properties of {beta}{double_prime}-alumina solid electrolyte (BASE), which is an excellent conductor of sodium ions, but an extremely poor conductor of electrons. When the inside of the BASE is maintained at a higher temperature and pressure, a concentration gradient is created across the BASE. Electrons and sodium atoms cannot pass through the BASE. However, the sodium atoms are ionized, and the sodium ions move through the BASE to the lowermore » potential (temperature) region. The electrons travel externally to the AMTEC cell, providing power. There are a number of potential advantages to a wick-pumped, vapor-fed AMTEC system when compared with other designs. A wick-pumped system uses capillary forces to passively return liquid to the evaporator, and to distribute the liquid in the evaporator. Since the fluid return is self-regulating, multiple BASE tubes can use a single remote condenser, potentially improving efficiency in advanced AMTEC designs. Since the system is vapor-fed, sodium vapor is supplied at a uniform temperature and flux to the BASE tube, even with non-uniform heat fluxes and temperatures at the evaporator. The primary objective of the Phase 2 program was to develop wick-pumped AMTEC cells. During the program, procedures to fabricate wicks with smaller pore sizes were developed, to allow operation of an AMTEC cell at 800 C. A revised design was made for a High-Temperature, Wick-Fed AMTEC cell. In addition to the smaller wick pore size, several other changes were made to increase the cell efficiency: (1) internal artery return of condensate; (2) high temperature electrical feedthrough; and (3) separate heat pipe for providing heat to the BASE.« less

High current plasma electron emitter

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fiksel, G.; Almagri, A.F.; Craig, D.

1995-07-01

A high current plasma electron emitter based on a miniature plasma source has been developed. The emitting plasma is created by a pulsed high current gas discharge. The electron emission current is 1 kA at 300 V at the pulse duration of 10 ms. The prototype injector described in this paper will be used for a 20 kA electrostatic current injection experiment in the Madison Symmetric Torus (MST) reversed-field pinch. The source will be replicated in order to attain this total current requirement. The source has a simple design and has proven very reliable in operation. A high emission current,more » small size (3.7 cm in diameter), and low impurity generation make the source suitable for a variety of fusion and technological applications.« less

Dielectric Yagi-Uda nanoantennas driven by electron-hole plasma photoexcitation

NASA Astrophysics Data System (ADS)

Li, S.; Lepeshov, S.; Savelev, R.; Baranov, D.; Belov, P.; Krasnok, A.

2017-11-01

All-dielectric nanophotonics based on high-index dielectric nanoparticles became a powerful platform for modern light science, providing many fascinating applications, including high-efficient nanoantennas and metamaterials. High-index dielectric nanostructures are of a special interest for nonlinear nanophotonics, where they demonstrate special types of optical nonlinearity, such as electron-hole plasma photoexcitation, which are not inherent to plasmonic nanostructures. Here, we propose a novel type of highly tunable all-dielectric Yagi-Uda nanoantennas, consisting of a chain of Si nanoparticles exciting by an electric dipole source, which allow tuning of their radiating properties via electron-hole plasma photoexcitation. We theoretically and numerically demonstrate the tuning of radiation power patterns and the Purcell effect by additional pumping of several boundary nanoparticles with relatively low peak intensities of fs-laser.

Solution-processed assembly of ultrathin transparent conductive cellulose nanopaper embedding AgNWs

NASA Astrophysics Data System (ADS)

Song, Yuanyuan; Jiang, Yaoquan; Shi, Liyi; Cao, Shaomei; Feng, Xin; Miao, Miao; Fang, Jianhui

2015-08-01

Natural biomass based cellulose nanopaper is becoming a promising transparent substrate to supersede traditional petroleum based polymer films in realizing future flexible paper-electronics. Here, ultrathin, highly transparent, outstanding conductive hybrid nanopaper with excellent mechanical flexibility was synthesized by the assembly of nanofibrillated cellulose (NFC) and silver nanowires (AgNWs) using a pressured extrusion paper-making technique. The hybrid nanopaper with a thickness of 4.5 μm has a good combination of transparent conductive performance and mechanical stability using bamboo/hemp NFC and AgNWs cross-linked by hydroxypropylmethyl cellulose (HPMC). The heterogeneous fibrous structure of BNFC/HNFC/AgNWs endows a uniform distribution and an enhanced forward light scattering, resulting in high electrical conductivity and optical transmittance. The hybrid nanopaper with an optimal weight ratio of BNFC/HNFC to AgNWs shows outstanding synergistic properties with a transmittance of 86.41% at 550 nm and a sheet resistance of 1.90 ohm sq-1, equal to the electronic conductivity, which is about 500 S cm-1. The BNFC/HNFC/AgNW hybrid nanopaper maintains a stable electrical conductivity after the peeling test and bending at 135° for 1000 cycles, indicating remarkably strong adhesion and mechanical flexibility. Of importance here is that the high-performance and low-cost hybrid nanopaper shows promising potential for electronics application in solar cells, flexible displays and other high-technology products.Natural biomass based cellulose nanopaper is becoming a promising transparent substrate to supersede traditional petroleum based polymer films in realizing future flexible paper-electronics. Here, ultrathin, highly transparent, outstanding conductive hybrid nanopaper with excellent mechanical flexibility was synthesized by the assembly of nanofibrillated cellulose (NFC) and silver nanowires (AgNWs) using a pressured extrusion paper-making technique. The hybrid nanopaper with a thickness of 4.5 μm has a good combination of transparent conductive performance and mechanical stability using bamboo/hemp NFC and AgNWs cross-linked by hydroxypropylmethyl cellulose (HPMC). The heterogeneous fibrous structure of BNFC/HNFC/AgNWs endows a uniform distribution and an enhanced forward light scattering, resulting in high electrical conductivity and optical transmittance. The hybrid nanopaper with an optimal weight ratio of BNFC/HNFC to AgNWs shows outstanding synergistic properties with a transmittance of 86.41% at 550 nm and a sheet resistance of 1.90 ohm sq-1, equal to the electronic conductivity, which is about 500 S cm-1. The BNFC/HNFC/AgNW hybrid nanopaper maintains a stable electrical conductivity after the peeling test and bending at 135° for 1000 cycles, indicating remarkably strong adhesion and mechanical flexibility. Of importance here is that the high-performance and low-cost hybrid nanopaper shows promising potential for electronics application in solar cells, flexible displays and other high-technology products. Electronic supplementary information (ESI) available. See DOI: 10.1039/c5nr03218k

Generation of high-power, tunable terahertz radiation from laser interaction with a relativistic electron beam

DOE PAGES

Zhang, Zhen; Yan, Lixin; Du, Yingchao; ...

2017-05-01

We propose a method based on the slice energy spread modulation to generate strong subpicosecond density bunching in high-intensity relativistic electron beams. A laser pulse with periodic intensity envelope is used to modulate the slice energy spread of the electron beam, which can then be converted into density modulation after a dispersive section. It is found that the double-horn slice energy distribution of the electron beam induced by the laser modulation is very effective to increase the density bunching. Since the modulation is performed on a relativistic electron beam, the process does not suffer from strong space charge force ormore » coupling between phase spaces, so that it is straightforward to preserve the beam quality for terahertz (THz) radiation and other applications. We show in both theory and simulations that the tunable radiation from the beam can cover the frequency range of 1 - 10 THz with high power and narrow-band spectra.« less

Extremely high electron mobility in a phonon-glass semimetal

NASA Astrophysics Data System (ADS)

Ishiwata, S.; Shiomi, Y.; Lee, J. S.; Bahramy, M. S.; Suzuki, T.; Uchida, M.; Arita, R.; Taguchi, Y.; Tokura, Y.

2013-06-01

The electron mobility is one of the key parameters that characterize the charge-carrier transport properties of materials, as exemplified by the quantum Hall effect as well as high-efficiency thermoelectric and solar energy conversions. For thermoelectric applications, introduction of chemical disorder is an important strategy for reducing the phonon-mediated thermal conduction, but is usually accompanied by mobility degradation. Here, we show a multilayered semimetal β-CuAgSe overcoming such a trade-off between disorder and mobility. The polycrystalline ingot shows a giant positive magnetoresistance and Shubnikov de Haas oscillations, indicative of a high-mobility small electron pocket derived from the Ag s-electron band. Ni doping, which introduces chemical and lattice disorder, further enhances the electron mobility up to 90,000 cm2 V-1 s-1 at 10 K, leading not only to a larger magnetoresistance but also a better thermoelectric figure of merit. This Ag-based layered semimetal with a glassy lattice is a new type of promising thermoelectric material suitable for chemical engineering.

High-quality electron beam generation in a proton-driven hollow plasma wakefield accelerator

NASA Astrophysics Data System (ADS)

Li, Y.; Xia, G.; Lotov, K. V.; Sosedkin, A. P.; Hanahoe, K.; Mete-Apsimon, O.

2017-10-01

Simulations of proton-driven plasma wakefield accelerators have demonstrated substantially higher accelerating gradients compared to conventional accelerators and the viability of accelerating electrons to the energy frontier in a single plasma stage. However, due to the strong intrinsic transverse fields varying both radially and in time, the witness beam quality is still far from suitable for practical application in future colliders. Here we demonstrate the efficient acceleration of electrons in proton-driven wakefields in a hollow plasma channel. In this regime, the witness bunch is positioned in the region with a strong accelerating field, free from plasma electrons and ions. We show that the electron beam carrying the charge of about 10% of 1 TeV proton driver charge can be accelerated to 0.6 TeV with a preserved normalized emittance in a single channel of 700 m. This high-quality and high-charge beam may pave the way for the development of future plasma-based energy frontier colliders.

Modeling of high composition AlGaN channel high electron mobility transistors with large threshold voltage

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bajaj, Sanyam, E-mail: bajaj.10@osu.edu; Hung, Ting-Hsiang; Akyol, Fatih

2014-12-29

We report on the potential of high electron mobility transistors (HEMTs) consisting of high composition AlGaN channel and barrier layers for power switching applications. Detailed two-dimensional (2D) simulations show that threshold voltages in excess of 3 V can be achieved through the use of AlGaN channel layers. We also calculate the 2D electron gas mobility in AlGaN channel HEMTs and evaluate their power figures of merit as a function of device operating temperature and Al mole fraction in the channel. Our models show that power switching transistors with AlGaN channels would have comparable on-resistance to GaN-channel based transistors for the samemore » operation voltage. The modeling in this paper shows the potential of high composition AlGaN as a channel material for future high threshold enhancement mode transistors.« less

A Microcontroller Operated Device for the Generation of Liquid Extracts from Conventional Cigarette Smoke and Electronic Cigarette Aerosol.

PubMed

Anderson, Chastain A; Bokota, Rachael E; Majeste, Andrew E; Murfee, Walter L; Wang, Shusheng

2018-01-18

Electronic cigarettes are the most popular tobacco product among middle and high schoolers and are the most popular alternative tobacco product among adults. High quality, reproducible research on the consequences of electronic cigarette use is essential for understanding emerging public health concerns and crafting evidence based regulatory policy. While a growing number of papers discuss electronic cigarettes, there is little consistency in methods across groups and very little consensus on results. Here, we describe a programmable laboratory device that can be used to create extracts of conventional cigarette smoke and electronic cigarette aerosol. This protocol details instructions for the assembly and operation of said device, and demonstrates the use of the generated extract in two sample applications: an in vitro cell viability assay and gas-chromatography mass-spectrometry. This method provides a tool for making direct comparisons between conventional cigarettes and electronic cigarettes, and is an accessible entry point into electronic cigarette research.

Modeling and Verification of Dependable Electronic Power System Architecture

NASA Astrophysics Data System (ADS)

Yuan, Ling; Fan, Ping; Zhang, Xiao-fang

The electronic power system can be viewed as a system composed of a set of concurrently interacting subsystems to generate, transmit, and distribute electric power. The complex interaction among sub-systems makes the design of electronic power system complicated. Furthermore, in order to guarantee the safe generation and distribution of electronic power, the fault tolerant mechanisms are incorporated in the system design to satisfy high reliability requirements. As a result, the incorporation makes the design of such system more complicated. We propose a dependable electronic power system architecture, which can provide a generic framework to guide the development of electronic power system to ease the development complexity. In order to provide common idioms and patterns to the system *designers, we formally model the electronic power system architecture by using the PVS formal language. Based on the PVS model of this system architecture, we formally verify the fault tolerant properties of the system architecture by using the PVS theorem prover, which can guarantee that the system architecture can satisfy high reliability requirements.

Interface Engineering of High-Performance Perovskite Photodetectors Based on PVP/SnO2 Electron Transport Layer.

PubMed

Wang, Ye; Zhang, Xingwang; Jiang, Qi; Liu, Heng; Wang, Denggui; Meng, Junhua; You, Jingbi; Yin, Zhigang

2018-02-21

Hybrid organic-inorganic perovskites have attracted intensive interest as active materials for high-performance photodetectors. However, studies on the electron transport layer (ETL) and its influence on the response time of photodetectors remain limited. Herein, we compare the performances of perovskite photodetectors with TiO 2 and SnO 2 ETLs, especially on the response time. Both photodetectors exhibit a high on/off current ratio of 10 5 , a large detectivity around 10 12 Jones, and a linear dynamic range over 80 dB. The SnO 2 -based perovskite photodiodes show ultrahigh response rates of 3 and 6 μs for the rise and decay times, respectively. However, photodetectors with TiO 2 ETLs have low responsivity and long response time at low driving voltage, which is attributed to the electron extraction barrier at the TiO 2 /perovskite interface and the charge traps in the TiO 2 layer. Furthermore, the dark current of SnO 2 -based perovskite photodiodes is effectively suppressed by inserting a poly(vinylpyrrolidone) interlayer, and then the on/off current ratio increases to 1.2 × 10 6 , corresponding to an improvement of 1 order of magnitude. Such low-cost, solution-processable perovskite photodetectors with high performance show promising potential for future optoelectronic applications.

High-Temperature Electronics: A Role for Wide Bandgap Semiconductors?

NASA Technical Reports Server (NTRS)

Neudeck, Philip G.; Okojie, Robert S.; Chen, Liang-Yu

2002-01-01

It is increasingly recognized that semiconductor based electronics that can function at ambient temperatures higher than 150 C without external cooling could greatly benefit a variety of important applications, especially-in the automotive, aerospace, and energy production industries. The fact that wide bandgap semiconductors are capable of electronic functionality at much higher temperatures than silicon has partially fueled their development, particularly in the case of SiC. It appears unlikely that wide bandgap semiconductor devices will find much use in low-power transistor applications until the ambient temperature exceeds approximately 300 C, as commercially available silicon and silicon-on-insulator technologies are already satisfying requirements for digital and analog very large scale integrated circuits in this temperature range. However, practical operation of silicon power devices at ambient temperatures above 200 C appears problematic, as self-heating at higher power levels results in high internal junction temperatures and leakages. Thus, most electronic subsystems that simultaneously require high-temperature and high-power operation will necessarily be realized using wide bandgap devices, once the technology for realizing these devices become sufficiently developed that they become widely available. Technological challenges impeding the realization of beneficial wide bandgap high ambient temperature electronics, including material growth, contacts, and packaging, are briefly discussed.

IRIDE: Interdisciplinary research infrastructure based on dual electron linacs and lasers

NASA Astrophysics Data System (ADS)

Ferrario, M.; Alesini, D.; Alessandroni, M.; Anania, M. P.; Andreas, S.; Angelone, M.; Arcovito, A.; Arnesano, F.; Artioli, M.; Avaldi, L.; Babusci, D.; Bacci, A.; Balerna, A.; Bartalucci, S.; Bedogni, R.; Bellaveglia, M.; Bencivenga, F.; Benfatto, M.; Biedron, S.; Bocci, V.; Bolognesi, M.; Bolognesi, P.; Boni, R.; Bonifacio, R.; Boscherini, F.; Boscolo, M.; Bossi, F.; Broggi, F.; Buonomo, B.; Calo, V.; Catone, D.; Capogni, M.; Capone, M.; Cassou, K.; Castellano, M.; Castoldi, A.; Catani, L.; Cavoto, G.; Cherubini, N.; Chirico, G.; Cestelli-Guidi, M.; Chiadroni, E.; Chiarella, V.; Cianchi, A.; Cianci, M.; Cimino, R.; Ciocci, F.; Clozza, A.; Collini, M.; Colo, G.; Compagno, A.; Contini, G.; Coreno, M.; Cucini, R.; Curceanu, C.; Curciarello, F.; Dabagov, S.; Dainese, E.; Davoli, I.; Dattoli, G.; De Caro, L.; De Felice, P.; De Leo, V.; Dell Agnello, S.; Della Longa, S.; Delle Monache, G.; De Spirito, M.; Di Cicco, A.; Di Donato, C.; Di Gioacchino, D.; Di Giovenale, D.; Di Palma, E.; Di Pirro, G.; Dodaro, A.; Doria, A.; Dosselli, U.; Drago, A.; Dupraz, K.; Escribano, R.; Esposito, A.; Faccini, R.; Ferrari, A.; Filabozzi, A.; Filippetto, D.; Fiori, F.; Frasciello, O.; Fulgentini, L.; Gallerano, G. P.; Gallo, A.; Gambaccini, M.; Gatti, C.; Gatti, G.; Gauzzi, P.; Ghigo, A.; Ghiringhelli, G.; Giannessi, L.; Giardina, G.; Giannini, C.; Giorgianni, F.; Giovenale, E.; Giulietti, D.; Gizzi, L.; Guaraldo, C.; Guazzoni, C.; Gunnella, R.; Hatada, K.; Iannone, M.; Ivashyn, S.; Jegerlehner, F.; Keeffe, P. O.; Kluge, W.; Kupsc, A.; Labate, L.; Levi Sandri, P.; Lombardi, V.; Londrillo, P.; Loreti, S.; Lorusso, A.; Losacco, M.; Lukin, A.; Lupi, S.; Macchi, A.; Magazù, S.; Mandaglio, G.; Marcelli, A.; Margutti, G.; Mariani, C.; Mariani, P.; Marzo, G.; Masciovecchio, C.; Masjuan, P.; Mattioli, M.; Mazzitelli, G.; Merenkov, N. P.; Michelato, P.; Migliardo, F.; Migliorati, M.; Milardi, C.; Milotti, E.; Milton, S.; Minicozzi, V.; Mobilio, S.; Morante, S.; Moricciani, D.; Mostacci, A.; Muccifora, V.; Murtas, F.; Musumeci, P.; Nguyen, F.; Orecchini, A.; Organtini, G.; Ottaviani, P. L.; Pace, C.; Pace, E.; Paci, M.; Pagani, C.; Pagnutti, S.; Palmieri, V.; Palumbo, L.; Panaccione, G. C.; Papadopoulos, C. F.; Papi, M.; Passera, M.; Pasquini, L.; Pedio, M.; Perrone, A.; Petralia, A.; Petrarca, M.; Petrillo, C.; Petrillo, V.; Pierini, P.; Pietropaolo, A.; Pillon, M.; Polosa, A. D.; Pompili, R.; Portoles, J.; Prosperi, T.; Quaresima, C.; Quintieri, L.; Rau, J. V.; Reconditi, M.; Ricci, A.; Ricci, R.; Ricciardi, G.; Ricco, G.; Ripani, M.; Ripiccini, E.; Romeo, S.; Ronsivalle, C.; Rosato, N.; Rosenzweig, J. B.; Rossi, A. A.; Rossi, A. R.; Rossi, F.; Rossi, G.; Russo, D.; Sabatucci, A.; Sabia, E.; Sacchetti, F.; Salducco, S.; Sannibale, F.; Sarri, G.; Scopigno, T.; Sekutowicz, J.; Serafini, L.; Sertore, D.; Shekhovtsova, O.; Spassovsky, I.; Spadaro, T.; Spataro, B.; Spinozzi, F.; Stecchi, A.; Stellato, F.; Surrenti, V.; Tenore, A.; Torre, A.; Trentadue, L.; Turchini, S.; Vaccarezza, C.; Vacchi, A.; Valente, P.; Venanzoni, G.; Vescovi, S.; Villa, F.; Zanotti, G.; Zema, N.; Zobov, M.; Zomer, F.

2014-03-01

This paper describes the scientific aims and potentials as well as the preliminary technical design of IRIDE, an innovative tool for multi-disciplinary investigations in a wide field of scientific, technological and industrial applications. IRIDE will be a high intensity "particles factory", based on a combination of high duty cycle radio-frequency superconducting electron linacs and of high energy lasers. Conceived to provide unique research possibilities for particle physics, for condensed matter physics, chemistry and material science, for structural biology and industrial applications, IRIDE will open completely new research possibilities and advance our knowledge in many branches of science and technology. IRIDE is also supposed to be realized in subsequent stages of development depending on the assigned priorities.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Citterio, M.; Camplani, A.; Cannon, M.

SRAM based Field Programmable Gate Arrays (FPGAs) have been rarely used in High Energy Physics (HEP) due to their sensitivity to radiation. The last generation of commercial FPGAs based on 28 nm feature size and on Silicon On Insulator (SOI) technologies are more tolerant to radiation to the level that their use in front-end electronics is now feasible. FPGAs provide re-programmability, high-speed computation and fast data transmission through the embedded serial transceivers. They could replace custom application specific integrated circuits in front end electronics in locations with moderate radiation field. Finally, the use of a FPGA in HEP experiments ismore » only limited by our ability to mitigate single event effects induced by the high energy hadrons present in the radiation field.« less

Fan-out Estimation in Spin-based Quantum Computer Scale-up.

PubMed

Nguyen, Thien; Hill, Charles D; Hollenberg, Lloyd C L; James, Matthew R

2017-10-17

Solid-state spin-based qubits offer good prospects for scaling based on their long coherence times and nexus to large-scale electronic scale-up technologies. However, high-threshold quantum error correction requires a two-dimensional qubit array operating in parallel, posing significant challenges in fabrication and control. While architectures incorporating distributed quantum control meet this challenge head-on, most designs rely on individual control and readout of all qubits with high gate densities. We analysed the fan-out routing overhead of a dedicated control line architecture, basing the analysis on a generalised solid-state spin qubit platform parameterised to encompass Coulomb confined (e.g. donor based spin qubits) or electrostatically confined (e.g. quantum dot based spin qubits) implementations. The spatial scalability under this model is estimated using standard electronic routing methods and present-day fabrication constraints. Based on reasonable assumptions for qubit control and readout we estimate 10 2 -10 5 physical qubits, depending on the quantum interconnect implementation, can be integrated and fanned-out independently. Assuming relatively long control-free interconnects the scalability can be extended. Ultimately, the universal quantum computation may necessitate a much higher number of integrated qubits, indicating that higher dimensional electronics fabrication and/or multiplexed distributed control and readout schemes may be the preferredstrategy for large-scale implementation.

Fluid and hybrid models for streamers

NASA Astrophysics Data System (ADS)

Bonaventura, Zdeněk

2016-09-01

Streamers are contracted ionizing waves with self-generated field enhancement that propagate into a low-ionized medium exposed to high electric field leaving filamentary trails of plasma behind. The widely used model to study streamer dynamics is based on drift-diffusion equations for electrons and ions, assuming local field approximation, coupled with Poisson's equation. For problems where presence of energetic electrons become important a fluid approach needs to be extended by a particle model, accompanied also with Monte Carlo Collision technique, that takes care of motion of these electrons. A combined fluid-particle approach is used to study an influence of surface emission processes on a fast-pulsed dielectric barrier discharge in air at atmospheric pressure. It is found that fluid-only model predicts substantially faster reignition dynamics compared to coupled fluid-particle model. Furthermore, a hybrid model can be created in which the population of electrons is divided in the energy space into two distinct groups: (1) low energy `bulk' electrons that are treated with fluid model, and (2) high energy `beam' electrons, followed as particles. The hybrid model is then capable not only to deal with streamer discharges in laboratory conditions, but also allows us to study electron acceleration in streamer zone of lighting leaders. There, the production of fast electrons from streamers is investigated, since these (runaway) electrons act as seeds for the relativistic runaway electron avalanche (RREA) mechanism, important for high-energy atmospheric physics phenomena. Results suggest that high energy electrons effect the streamer propagation, namely the velocity, the peak electric field, and thus also the production rate of runaway electrons. This work has been supported by the Czech Science Foundation research project 15-04023S.

Spectroscopic results in helium from the NASA Lewis Bumpy Torus plasma. [ion heating by Penning discharge in confinement geometry

NASA Technical Reports Server (NTRS)

Richardson, R. W.

1974-01-01

Spectroscopic measurements were carried out on the NASA Lewis Bumpy Torus experiment in which a steady state ion heating method based on the modified Penning discharge is applied in a bumpy torus confinement geometry. Electron temperatures in pure helium are measured from the ratio of spectral line intensities. Measured electron temperatures range from 10 to 100 eV. Relative electron densities are also measured over the range of operating conditions. Radial profiles of temperature and relative density are measured in the two basic modes of operation of the device called the low and high pressure modes. The electron temperatures are used to estimate particle confinement times based on a steady state particle balance.

Sub-nanometer surface chemistry and orbital hybridization in lanthanum-doped ceria nano-catalysts revealed by 3D electron microscopy.

PubMed

Collins, Sean M; Fernandez-Garcia, Susana; Calvino, José J; Midgley, Paul A

2017-07-14

Surface chemical composition, electronic structure, and bonding characteristics determine catalytic activity but are not resolved for individual catalyst particles by conventional spectroscopy. In particular, the nano-scale three-dimensional distribution of aliovalent lanthanide dopants in ceria catalysts and their effect on the surface electronic structure remains unclear. Here, we reveal the surface segregation of dopant cations and oxygen vacancies and observe bonding changes in lanthanum-doped ceria catalyst particle aggregates with sub-nanometer precision using a new model-based spectroscopic tomography approach. These findings refine our understanding of the spatially varying electronic structure and bonding in ceria-based nanoparticle aggregates with aliovalent cation concentrations and identify new strategies for advancing high efficiency doped ceria nano-catalysts.

Plasmon modes of bilayer molybdenum disulfide: a density functional study

NASA Astrophysics Data System (ADS)

Torbatian, Z.; Asgari, R.

2017-11-01

We explore the collective electronic excitations of bilayer molybdenum disulfide (MoS2) using density functional theory together with random phase approximation. The many-body dielectric function and electron energy-loss spectra are calculated using an ab initio based model involving material-realistic physical properties. The electron energy-loss function of the bilayer MoS2 system is found to be sensitive to either electron or hole doping and this is due to the fact that the Kohn-Sham band dispersions are not symmetric for energies above and below the zero Fermi level. Three plasmon modes are predicted, a damped high-energy mode, one optical mode (in-phase mode) for which the plasmon dispersion exhibits \\sqrt q in the long wavelength limit originating from low-energy electron scattering and finally a highly damped acoustic mode (out-of-phase mode).

Hydrated electrons react with high specificity with cisplatin bound to single-stranded DNA.

PubMed

Behmand, B; Cloutier, P; Girouard, S; Wagner, J R; Sanche, L; Hunting, D J

2013-12-19

Short oligonucleotides TTTTTGTGTTT and TTTTTTTGTTT in solution with and without cisplatin (cisPt) bound to the guanine bases were irradiated with γ-rays at doses varying from 0 to 2500 Gy. To determine the effect of hydrated electrons from water radiolysis on the oligonucleotides, we quenched (•)OH radicals with ethylenediaminetetraacetic acid (EDTA) and displaced oxygen, which reacts with hydrated electrons, by bubbling the solution with wet nitrogen. DNA strand breaks and platinum detachment were quantified by gel electrophoresis. Our results demonstrate that hydrated electrons react almost exclusively at the position of the cisPt adduct, where they induce cisPt detachment from one or both guanines in the oligonucleotide. Given the high yield of hydrated electrons in irradiated tissues, this reaction may be an important step in the mechanism of radiosensitization of DNA by cisPt.

A Furan-Thiophene-Based Quinoidal Compound: A New Class of Solution-Processable High-Performance n-Type Organic Semiconductor.

PubMed

Xiong, Yu; Tao, Jingwei; Wang, Ruihao; Qiao, Xiaolan; Yang, Xiaodi; Wang, Deliang; Wu, Hongzhuo; Li, Hongxiang

2016-07-01

The furan-thiophene-based quinoidal organic semiconductor, TFT-CN, is designed and synthesized. TFT-CN displays a high electron mobility of 7.7 cm(2) V(-1) s(-1) , two orders of magnitude higher than the corresponding thiophene-based derivative. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Increasing the lego of 2D electronics materials: silicene and germanene, graphene's new synthetic cousins

NASA Astrophysics Data System (ADS)

Le Lay, Guy; Salomon, Eric; Angot, Thierry; Eugenia Dávila, Maria

2015-05-01

The realization of the first Field Effect Transistors operating at room temperature, based on a single layer silicene channel, open up highly promising perspectives, e.g., typically, for applications in digital electronics. Here, we describe recent results on the growth, characterization and electronic properties of novel synthetic two-dimensional materials beyond graphene, namely silicene and germanene, its silicon and germanium counterparts.

Electronic laboratory notebook: the academic point of view.

PubMed

Rudolphi, Felix; Goossen, Lukas J

2012-02-27

Based on a requirement analysis and alternative design considerations, a platform-independent electronic laboratory notebook (ELN) has been developed that specifically targets academic users. Its intuitive design and numerous productivity features motivate chemical researchers and students to record their data electronically. The data are stored in a highly structured form that offers substantial benefits over laboratory notebooks written on paper with regard to data retrieval, data mining, and exchange of results.

Tunable Nitride Josephson Junctions.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Missert, Nancy A.; Henry, Michael David; Lewis, Rupert M.

We have developed an ambient temperature, SiO 2/Si wafer - scale process for Josephson junctions based on Nb electrodes and Ta x N barriers with tunable electronic properties. The films are fabricated by magnetron sputtering. The electronic properties of the Ta xN barriers are controlled by adjusting the nitrogen flow during sputtering. This technology offers a scalable alternative to the more traditional junctions based on AlO x barriers for low - power, high - performance computing.

Room-temperature electron spin amplifier based on Ga(In)NAs alloys.

PubMed

Puttisong, Yuttapoom; Buyanova, Irina A; Ptak, Aaron J; Tu, Charles W; Geelhaar, Lutz; Riechert, Henning; Chen, Weimin M

2013-02-06

The first experimental demonstration of a spin amplifier at room temperature is presented. An efficient, defect-enabled spin amplifier based on a non-magnetic semiconductor, Ga(In)NAs, is proposed and demonstrated, with a large spin gain (up to 2700% at zero field) for conduction electrons and a high cut-off frequency of up to 1 GHz. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Injection of auxiliary electrons for increasing the plasma density in highly charged and high intensity ion sources

DOE Office of Scientific and Technical Information (OSTI.GOV)

Odorici, F., E-mail: fabrizio.odorici@bo.infn.it; Malferrari, L.; Montanari, A.

Different electron guns based on cold- or hot-cathode technologies have been developed since 2009 at INFN for operating within ECR plasma chambers as sources of auxiliary electrons, with the aim of boosting the source performances by means of a higher plasma lifetime and density. Their application to microwave discharge ion sources, where plasma is not confined, has required an improvement of the gun design, in order to “screen” the cathode from the plasma particles. Experimental tests carried out on a plasma reactor show a boost of the plasma density, ranging from 10% to 90% when the electron guns are used,more » as explained by plasma diffusion models.« less

Prediction of high-energy radiation belt electron fluxes using a combined VERB-NARMAX model

NASA Astrophysics Data System (ADS)

Pakhotin, I. P.; Balikhin, M. A.; Shprits, Y.; Subbotin, D.; Boynton, R.

2013-12-01

This study is concerned with the modelling and forecasting of energetic electron fluxes that endanger satellites in space. By combining data-driven predictions from the NARMAX methodology with the physics-based VERB code, it becomes possible to predict electron fluxes with a high level of accuracy and across a radial distance from inside the local acceleration region to out beyond geosynchronous orbit. The model coupling also makes is possible to avoid accounting for seed electron variations at the outer boundary. Conversely, combining a convection code with the VERB and NARMAX models has the potential to provide even greater accuracy in forecasting that is not limited to geostationary orbit but makes predictions across the entire outer radiation belt region.

Laser-driven electron beam and radiation sources for basic, medical and industrial sciences.

PubMed

Nakajima, Kazuhisa

2015-01-01

To date active research on laser-driven plasma-based accelerators have achieved great progress on production of high-energy, high-quality electron and photon beams in a compact scale. Such laser plasma accelerators have been envisaged bringing a wide range of applications in basic, medical and industrial sciences. Here inheriting the groundbreaker's review article on "Laser Acceleration and its future" [Toshiki Tajima, (2010)],(1)) we would like to review recent progress of producing such electron beams due to relativistic laser-plasma interactions followed by laser wakefield acceleration and lead to the scaling formulas that are useful to design laser plasma accelerators with controllability of beam energy and charge. Lastly specific examples of such laser-driven electron/photon beam sources are illustrated.

Unified first principles description from warm dense matter to ideal ionized gas plasma: electron-ion collisions induced friction.

PubMed

Dai, Jiayu; Hou, Yong; Yuan, Jianmin

2010-06-18

Electron-ion interactions are central to numerous phenomena in the warm dense matter (WDM) regime and at higher temperature. The electron-ion collisions induced friction at high temperature is introduced in the procedure of ab initio molecular dynamics using the Langevin equation based on density functional theory. In this framework, as a test for Fe and H up to 1000 eV, the equation of state and the transition of electronic structures of the materials with very wide density and temperature can be described, which covers a full range of WDM up to high energy density physics. A unified first principles description from condensed matter to ideal ionized gas plasma is constructed.

Application of a digital data acquisition system for time of flight Positron annihilation-induced Auger Electron Spectroscopy

NASA Astrophysics Data System (ADS)

Gladen, R. W.; Chirayath, V. A.; McDonald, A. D.; Fairchild, A. J.; Chrysler, M. D.; Imam, S. K.; Koymen, A. R.; Weiss, A. H.

We describe herein a digital data acquisition system for a time-of-flight Positron annihilation-induced Auger Electron Spectrometer. This data acquisition system consists of a high-speed digitizer collecting signals induced by Auger electrons and annihilation gammas in a multi-channel plate electron detector and a BaF2 gamma detector, respectively. The time intervals between these two signals is used to determine the times of flight of the Auger electrons, which are analyzed by algorithms based on traditional nuclear electronics methods. Ultimately, this digital data acquisition system will be expanded to incorporate the first coincidence measurements of Auger electron and annihilation gamma energies.

A knittable fiber-shaped supercapacitor based on natural cotton thread for wearable electronics

NASA Astrophysics Data System (ADS)

Zhou, Qianlong; Jia, Chunyang; Ye, Xingke; Tang, Zhonghua; Wan, Zhongquan

2016-09-01

At present, the topic of building high-performance, miniaturized and mechanically flexible energy storage modules which can be directly integrated into textile based wearable electronics is a hotspot in the wearable technology field. In this paper, we reported a highly flexible fiber-shaped electrode fabricated through a one-step convenient hydrothermal process. The prepared graphene hydrogels/multi-walled carbon nanotubes-cotton thread derived from natural cotton thread is electrochemically active and mechanically strong. Fiber-shaped supercapacitor based on the prepared fiber electrodes and polyvinyl alcohol-H3PO4 gel electrolyte exhibits good capacitive performance (97.73 μF cm-1 at scan rate of 2 mV s-1), long cycle life (95.51% capacitance retention after 8000 charge-discharge cycles) and considerable stability (90.75% capacitance retention after 500 continuous bending cycles). Due to its good mechanical and electrochemical properties, the graphene hydrogels/multi-walled carbon nanotubes-cotton thread based all-solid fiber-shaped supercapacitor can be directly knitted into fabrics and maintain its original capacitive performance. Such a low-cost textile thread based versatile energy storage device may hold great potential for future wearable electronics applications.

High-resolution broadband terahertz spectroscopy via electronic heterodyne detection of photonically generated terahertz frequency comb.

PubMed

Pavelyev, D G; Skryl, A S; Bakunov, M I

2014-10-01

We report an alternative approach to the terahertz frequency-comb spectroscopy (TFCS) based on nonlinear mixing of a photonically generated terahertz pulse train with a continuous wave signal from an electronic synthesizer. A superlattice is used as a nonlinear mixer. Unlike the standard TFCS technique, this approach does not require a complex double-laser system but retains the advantages of TFCS-high spectral resolution and wide bandwidth.

Large-scale synthesis of high-quality hexagonal boron nitride nanosheets for large-area graphene electronics.

PubMed

Lee, Kang Hyuck; Shin, Hyeon-Jin; Lee, Jinyeong; Lee, In-yeal; Kim, Gil-Ho; Choi, Jae-Young; Kim, Sang-Woo

2012-02-08

Hexagonal boron nitride (h-BN) has received a great deal of attention as a substrate material for high-performance graphene electronics because it has an atomically smooth surface, lattice constant similar to that of graphene, large optical phonon modes, and a large electrical band gap. Herein, we report the large-scale synthesis of high-quality h-BN nanosheets in a chemical vapor deposition (CVD) process by controlling the surface morphologies of the copper (Cu) catalysts. It was found that morphology control of the Cu foil is much critical for the formation of the pure h-BN nanosheets as well as the improvement of their crystallinity. For the first time, we demonstrate the performance enhancement of CVD-based graphene devices with large-scale h-BN nanosheets. The mobility of the graphene device on the h-BN nanosheets was increased 3 times compared to that without the h-BN nanosheets. The on-off ratio of the drain current is 2 times higher than that of the graphene device without h-BN. This work suggests that high-quality h-BN nanosheets based on CVD are very promising for high-performance large-area graphene electronics. © 2012 American Chemical Society

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mieno, H.; Kabe, R.; Allendorf, M. D.

Here, the first metal–organic framework exhibiting thermally activated delayed fluorescence (TADF) was developed. The zirconium-based framework (UiO-68-dpa) uses a newly designed linker composed of a terphenyl backbone, an electron-accepting carboxyl group, and an electron-donating diphenylamine and exhibits green TADF emission with a photoluminescence quantum yield of 30% and high thermal stability.

Using PBL to Deliver Course in Digital Electronics

ERIC Educational Resources Information Center

Mantri, Archana; Dutt, Sunil; Gupta, J. P; Chitkara, Madhu

2009-01-01

Problem Based Learning (PBL) has proven to be a highly successful pedagogical model in many educational fields, although it is comparatively uncommon in technical education. It goes beyond the typical teaching methodology by promoting student interaction. This paper presents a PBL trial applied to an undergraduate Digital Electronics course in the…

Promising applications of graphene and graphene-based nanostructures

NASA Astrophysics Data System (ADS)

Nguyen, Bich Ha; Hieu Nguyen, Van

2016-06-01

The present article is a review of research works on promising applications of graphene and graphene-based nanostructures. It contains five main scientific subjects. The first one is the research on graphene-based transparent and flexible conductive films for displays and electrodes: efficient method ensuring uniform and controllable deposition of reduced graphene oxide thin films over large areas, large-scale pattern growth of graphene films for stretchble transparent electrodes, utilization of graphene-based transparent conducting films and graphene oxide-based ones in many photonic and optoelectronic devices and equipments such as the window electrodes of inorganic, organic and dye-sensitized solar cells, organic light-emitting diodes, light-emitting electrochemical cells, touch screens, flexible smart windows, graphene-based saturated absorbers in laser cavities for ultrafast generations, graphene-based flexible, transparent heaters in automobile defogging/deicing systems, heatable smart windows, graphene electrodes for high-performance organic field-effect transistors, flexible and transparent acoustic actuators and nanogenerators etc. The second scientific subject is the research on conductive inks for printed electronics to revolutionize the electronic industry by producing cost-effective electronic circuits and sensors in very large quantities: preparing high mobility printable semiconductors, low sintering temperature conducting inks, graphene-based ink by liquid phase exfoliation of graphite in organic solutions, and developing inkjet printing technique for mass production of high-quality graphene patterns with high resolution and for fabricating a variety of good-performance electronic devices, including transparent conductors, embedded resistors, thin-film transistors and micro supercapacitors. The third scientific subject is the research on graphene-based separation membranes: molecular dynamics simulation study on the mechanisms of the transport of molecules, vapors and gases through nanopores in graphene membranes, experimental works investigating selective transport of different molecules through nanopores in single-layer graphene and graphene-based membranes toward the water desalination, chemical mixture separation and gas control. Various applications of graphene in bio-medicine are the contents of the fourth scientific subject of the review. They include the DNA translocations through nanopores in graphene membranes toward the fabrication of devices for genomic screening, in particular DNA sequencing; subnanometre trans-electrode membranes with potential applications to the fabrication of very high resolution, high throughput nanopore-based single-molecule detectors; antibacterial activity of graphene, graphite oxide, graphene oxide and reduced graphene oxide; nanopore sensors for nucleic acid analysis; utilization of graphene multilayers as the gates for sequential release of proteins from surface; utilization of graphene-based electroresponsive scaffolds as implants for on-demand drug delivery etc. The fifth scientific subject of the review is the research on the utilization of graphene in energy storage devices: ternary self-assembly of ordered metal oxide-graphene nanocomposites for electrochemical energy storage; self-assembled graphene/carbon nanotube hybrid films for supercapacitors; carbon-based supercapacitors fabricated by activation of graphene; functionalized graphene sheet-sulfure nanocomposite for using as cathode material in rechargeable lithium batteries; tunable three-dimensional pillared carbon nanotube-graphene networks for high-performance capacitance; fabrications of electrochemical micro-capacitors using thin films of carbon nanotubes and chemically reduced graphenes; laser scribing of high-performance and flexible graphene-based electrochemical capacitors; emergence of next-generation safe batteries featuring graphene-supported Li metal anode with exceptionally high energy or power densities; fabrication of anodes for lithium ion batteries from crumpled graphene-encapsulated Si nanoparticles; liquid-mediated dense integration of graphene materials for compact capacitive energy storage; scalable fabrication of high-power graphene micro-supercapacitors for flexible and on-chip energy storage; superior micro-supercapacitors based on graphene quantum dots; all-graphene core-sheat microfibres for all-solid-state, stretchable fibriform supercapacitors and wearable electronic textiles; micro-supercapacitors with high electrochemical performance based on three-dimensional graphene-carbon nanotube carpets; macroscopic nitrogen-doped graphene hydrogels for ultrafast capacitors; manufacture of scalable ultra-thin and high power density graphene electrochemical capacitor electrodes by aqueous exfoliation and spray deposition; scalable synthesis of hierarchically structured carbon nanotube-graphene fibers for capacitive energy storage; phosphorene-graphene hybrid material as a high-capacity anode material for sodium-ion batteries. Beside above-presented promising applications of graphene and graphene-based nanostructures, other less widespread, but perhaps not less important, applications of graphene and graphene-based nanomaterials, are also briefly discussed.

Self-Limiting Oxides on WSe2 as Controlled Surface Acceptors and Low-Resistance Hole Contacts.

PubMed

Yamamoto, Mahito; Nakaharai, Shu; Ueno, Keiji; Tsukagoshi, Kazuhito

2016-04-13

Transition metal oxides show much promise as effective p-type contacts and dopants in electronics based on transition metal dichalcogenides. Here we report that atomically thin films of under-stoichiometric tungsten oxides (WOx with x < 3) grown on tungsten diselenide (WSe2) can be used as both controlled charge transfer dopants and low-barrier contacts for p-type WSe2 transistors. Exposure of atomically thin WSe2 transistors to ozone (O3) at 100 °C results in self-limiting oxidation of the WSe2 surfaces to conducting WOx films. WOx-covered WSe2 is highly hole-doped due to surface electron transfer from the underlying WSe2 to the high electron affinity WOx. The dopant concentration can be reduced by suppressing the electron affinity of WOx by air exposure, but exposure to O3 at room temperature leads to the recovery of the electron affinity. Hence, surface transfer doping with WOx is virtually controllable. Transistors based on WSe2 covered with WOx show only p-type conductions with orders of magnitude better on-current, on/off current ratio, and carrier mobility than without WOx, suggesting that the surface WOx serves as a p-type contact with a low hole Schottky barrier. Our findings point to a simple and effective strategy for creating p-type devices based on two-dimensional transition metal dichalcogenides with controlled dopant concentrations.

Conceptual design of hollow electron lenses for beam halo control in the Large Hadron Collider

DOE Office of Scientific and Technical Information (OSTI.GOV)

Stancari, Giulio; Previtali, Valentina; Valishev, Alexander

Collimation with hollow electron beams is a technique for halo control in high-power hadron beams. It is based on an electron beam (possibly pulsed or modulated in intensity) guided by strong axial magnetic fields which overlaps with the circulating beam in a short section of the ring. The concept was tested experimentally at the Fermilab Tevatron collider using a hollow electron gun installed in one of the Tevatron electron lenses. We are proposing a conceptual design for applying this technique to the Large Hadron Collider at CERN. A prototype hollow electron gun for the LHC was built and tested. Themore » expected performance of the hollow electron beam collimator was based on Tevatron experiments and on numerical tracking simulations. Halo removal rates and enhancements of halo diffusivity were estimated as a function of beam and lattice parameters. Proton beam core lifetimes and emittance growth rates were checked to ensure that undesired effects were suppressed. Hardware specifications were based on the Tevatron devices and on preliminary engineering integration studies in the LHC machine. Required resources and a possible timeline were also outlined, together with a brief discussion of alternative halo-removal schemes and of other possible uses of electron lenses to improve the performance of the LHC.« less

The research of single intersection sensor signal control based on section data

NASA Astrophysics Data System (ADS)

Liu, Yunxiang; Huang, Yue; Wang, Hao

2016-12-01

Propose a sensing signal intersection control design electronic license based on the design by setting the intersection readers to interact with active electronic tags equipped vehicles, vehicle information obtained on the road section. In the vehicle detection sensor may control the green density as evaluation criteria are extended when the vehicle is higher than the threshold, the green density continuity, whereas the switching phases. Induction showed improved control strategy can achieve real-time traffic signal control effectively in high saturation intersection, to overcome the traditional sensor control failure at high saturation drawbacks and improve the utilization of urban Intersection comparative analysis by simulation.

Peptide π-Electron Conjugates: Organic Electronics for Biology?

PubMed

Ardoña, Herdeline Ann M; Tovar, John D

2015-12-16

Highly ordered arrays of π-conjugated molecules are often viewed as a prerequisite for effective charge-transporting materials. Studies involving these materials have traditionally focused on organic electronic devices, with more recent emphasis on biological systems. In order to facilitate the transition to biological environments, biomolecules that can promote hierarchical ordering and water solubility are often covalently appended to the π-electron unit. This review highlights recent work on π-conjugated systems bound to peptide moieties that exhibit self-assembly and aims to provide an overview on the development and emerging applications of peptide-based supramolecular π-electron systems.

[Survey of pain after ambulatory surgery: An internet-based instrument].

PubMed

Schwarze, C; Zenz, D; Orlowski, O; Wempe, C; Van Aken, H; Zahn, P; Maier, C; Pogatzki-Zahn, E M

2016-04-01

Pain after surgery continues to be undermanaged. Studies and initiatives aiming to improve the management of postoperative pain are growing; however, most studies focus on inpatients and pain on the first day after surgery. The management of postoperative pain after ambulatory surgery and for several days thereafter is not yet a major focus. One reason is the low return rate of the questionnaires in the ambulatory sector. This article reports the development and feasibility of a web-based electronic data collection system to examine pain and pain-related outcome on predefined postoperative days after ambulatory surgery. In this prospective pilot study 127 patients scheduled for ambulatory surgery were asked to participate in a survey to evaluate aspects related to pain after ambulatory surgery. The data survey was divided in (1) a preoperative, intraoperative and postoperative part and (2) a postoperative internet-based electronic questionnaire which was sent via e-mail link to the patient on days 1, 3 and 7 after surgery. A software was developed using a PHP-based platform to send e-mails and retrieve the data after web-based entries via a local browser. Feasibility, internet-based hitches and compliance were assessed by an additional telephone call after day 7. A total of 100 patients (50 female) between 18 and 71 years (mean 39.1 ± 12.7 years) were included in the pilot study. Return rates of the electronic questionnaires were 86% (days 3 and 7) and 91% (day 1 after surgery). All 3 electronic questionnaires were answered by 82% of patients. Aspects influencing the return rate of questionnaires were work status but not age, gender, education level and preoperative pain. Telephone interviews were performed with 81 patients and revealed high operability of the internet-based survey without any major problems. The user-friendly feasibility and operability of this internet-based electronic data survey system explain the high compliance and return rate of electronic questionnaires by patients at home after ambulatory surgery. This survey tool therefore provides unique opportunities to evaluate and improve postoperative pain management after ambulatory surgery.

The influence of surfaces on the transient terahertz conductivity and electron mobility of GaAs nanowires

NASA Astrophysics Data System (ADS)

Joyce, Hannah J.; Baig, Sarwat A.; Parkinson, Patrick; Davies, Christopher L.; Boland, Jessica L.; Tan, H. Hoe; Jagadish, Chennupati; Herz, Laura M.; Johnston, Michael B.

2017-06-01

Bare unpassivated GaAs nanowires feature relatively high electron mobilities (400-2100 cm2 V-1 s-1) and ultrashort charge carrier lifetimes (1-5 ps) at room temperature. These two properties are highly desirable for high speed optoelectronic devices, including photoreceivers, modulators and switches operating at microwave and terahertz frequencies. When engineering these GaAs nanowire-based devices, it is important to have a quantitative understanding of how the charge carrier mobility and lifetime can be tuned. Here we use optical-pump-terahertz-probe spectroscopy to quantify how mobility and lifetime depend on the nanowire surfaces and on carrier density in unpassivated GaAs nanowires. We also present two alternative frameworks for the analysis of nanowire photoconductivity: one based on plasmon resonance and the other based on Maxwell-Garnett effective medium theory with the nanowires modelled as prolate ellipsoids. We find the electron mobility decreases significantly with decreasing nanowire diameter, as charge carriers experience increased scattering at nanowire surfaces. Reducing the diameter from 50 nm to 30 nm degrades the electron mobility by up to 47%. Photoconductivity dynamics were dominated by trapping at saturable states existing at the nanowire surface, and the trapping rate was highest for the nanowires of narrowest diameter. The maximum surface recombination velocity, which occurs in the limit of all traps being empty, was calculated as 1.3  ×  106 cm s-1. We note that when selecting the optimum nanowire diameter for an ultrafast device, there is a trade-off between achieving a short lifetime and a high carrier mobility. To achieve high speed GaAs nanowire devices featuring the highest charge carrier mobilities and shortest lifetimes, we recommend operating the devices at low charge carrier densities.

The NSCL electron beam ion trap for the reacceleration of rare isotopes coming to life: first extraction tests with a high-current electron gun.

PubMed

Schwarz, S; Bollen, G; Johnson, M; Kester, O; Kostin, M; Ottarson, J; Portillo, M; Wilson, C; López-Urrutia, J R Crespo; Dilling, J

2010-02-01

NSCL is currently constructing the ReA3 reaccelerator, which will accelerate rare isotopes obtained from gas stopping of fast-fragment beams to energies of up to 3 MeV/u for uranium and higher for lighter ions. A high-current charge breeder, based on an electron beam ion trap (EBIT), has been chosen as the first step in the acceleration process, as it has the potential to efficiently produce highly charged ions in a single charge state. These ions are fed into a compact linear accelerator consisting of a radio frequency quadrupole structure and superconducting cavities. The NSCL EBIT has been fully designed with most of the parts constructed. The design concept of the EBIT and results from initial commissioning tests of the electron gun and collector with a temporary 0.4 T magnet are presented.

A radiation belt monitor for the High Energy Transient Experiment Satellite

NASA Technical Reports Server (NTRS)

Lo, D. H.; Wenzel, K. W.; Petrasso, R. D.; Prigozhin, G. Y.; Doty, J.; Ricker, G.

1993-01-01

A Radiation Belt Monitor (RBM) sensitive to protons and electrons with energy approximately greater than 0.5 MeV has been designed for the High Energy Transient Experiment (HETE) satellite in order to: first, control the on-off configuration of the experiments (i.e. those susceptible to proton damage); and second, to indicate the presence of proton and/or electron events that could masquerade as legitimate high energy photon events. One of the two RBM channels has an enhanced sensitivity to electrons. Each channel of the RBM, based on a PIN silicon diode, requires a typical power of 6 milliwatts. Tests have been performed with protons with energies from approximately 0.1 to 2.5 MeV (generated by a Cockcroft-Walton linear accelerator via the d(d,p)t reaction), and with electrons with energies up to 1 MeV (from a 1.0 microcurie Bi-207 source).

Demonstration of Cascaded Modulator-Chicane Microbunching of a Relativistic Electron Beam

DOE PAGES

Sudar, N.; Musumeci, P.; Gadjev, I.; ...

2018-03-15

Here, we present results of an experiment showing the first successful demonstration of a cascaded microbunching scheme. Two modulator-chicane prebunchers arranged in series and a high power mid-IR laser seed are used to modulate a 52 MeV electron beam into a train of sharp microbunches phase locked to the external drive laser. This configuration is shown to greatly improve matching of the beam into the small longitudinal phase space acceptance of short-wavelength accelerators. We demonstrate trapping of nearly all (96%) of the electrons in a strongly tapered inverse free-electron laser accelerator, with an order-of-magnitude reduction in injection losses compared tomore » the classical single-buncher scheme. These results represent a critical advance in laser-based longitudinal phase space manipulations and find application in high gradient advanced acceleration as well as in high peak and average power coherent radiation sources.« less

Electron Heat Flux in Pressure Balance Structures at Ulysses

NASA Technical Reports Server (NTRS)

Yamauchi, Yohei; Suess, Steven T.; Sakurai, Takashi; Whitaker, Ann F. (Technical Monitor)

2001-01-01

Pressure balance structures (PBSs) are a common feature in the high-latitude solar wind near solar minimum. Rom previous studies, PBSs are believed to be remnants of coronal plumes and be related to network activity such as magnetic reconnection in the photosphere. We investigated the magnetic structures of the PBSs, applying a minimum variance analysis to Ulysses/Magnetometer data. At 2001 AGU Spring meeting, we reported that PBSs have structures like current sheets or plasmoids, and suggested that they are associated with network activity at the base of polar plumes. In this paper, we have analyzed high-energy electron data at Ulysses/SWOOPS to see whether bi-directional electron flow exists and confirm the conclusions more precisely. As a result, although most events show a typical flux directed away from the Sun, we have obtained evidence that some PBSs show bi-directional electron flux and others show an isotropic distribution of electron pitch angles. The evidence shows that plasmoids are flowing away from the Sun, changing their flow direction dynamically in a way not caused by Alfven waves. From this, we have concluded that PBSs are generated due to network activity at the base of polar plumes and their magnetic structures axe current sheets or plasmoids.

Angle selective backscattered electron contrast in the low-voltage scanning electron microscope: Simulation and experiment for polymers.

PubMed

Wan, Q; Masters, R C; Lidzey, D; Abrams, K J; Dapor, M; Plenderleith, R A; Rimmer, S; Claeyssens, F; Rodenburg, C

2016-12-01

Recently developed detectors can deliver high resolution and high contrast images of nanostructured carbon based materials in low voltage scanning electron microscopes (LVSEM) with beam deceleration. Monte Carlo Simulations are also used to predict under which exact imaging conditions purely compositional contrast can be obtained and optimised. This allows the prediction of the electron signal intensity in angle selective conditions for back-scattered electron (BSE) imaging in LVSEM and compares it to experimental signals. Angle selective detection with a concentric back scattered (CBS) detector is considered in the model in the absence and presence of a deceleration field, respectively. The validity of the model prediction for both cases was tested experimentally for amorphous C and Cu and applied to complex nanostructured carbon based materials, namely a Poly(N-isopropylacrylamide)/Poly(ethylene glycol) Diacrylate (PNIPAM/PEGDA) semi-interpenetration network (IPN) and a Poly(3-hexylthiophene-2,5-diyl) (P3HT) film, to map nano-scale composition and crystallinity distribution by avoiding experimental imaging conditions that lead to a mixed topographical and compositional contrast. Copyright © 2016 The Authors. Published by Elsevier B.V. All rights reserved.

Active noise control technique for diesel train locomotor exhaust noise abatement

NASA Astrophysics Data System (ADS)

Cotana, Franco; Rossi, Federico

2002-11-01

An original prototype for train locomotor exhaust gas pipe noise reduction (electronic muffler) is proposed: the system is based on an active noise control technique. An acoustical measurement campaign has shown that locomotor exhaust noise is characterized by very low frequency components (less than 80 Hz) and very high acoustic power (up to 110 dB). A peculiar electronic muffler characterized by high acoustical efficiency at very low frequencies has been designed and realized at Perugia University Acoustic Laboratory; it has been installed on an Italian D.245 train locomotor, equipped with a 500-kW diesel engine. The electronic muffler has been added to the traditional passive muffler. Very low transmission losses are introduced by the electronic muffler because of its particular shape; thus, engine efficiency does not further decrease. Canceling noise is generated by means of DSP-based numerical algorithm. Disturbing noise and canceling noise destructively interfere at the exhaust duct outlet section; outgoing noise is thus reduced. The control system reduces exhaust noise both in the steady and unsteady engine regime. Measurement results have shown that electronic muffler introduces up to 15 dB noise abatement in the low-frequency components.

LEDs based upon AlGaInP heterostructures with multiple quantum wells: comparison of fast neutrons and gamma-quanta irradiation

NASA Astrophysics Data System (ADS)

Gradoboev, A. V.; Orlova, K. N.; Simonova, A. V.

2018-05-01

The paper presents the research results of watt and volt characteristics of LEDs based upon AlGaInP heterostructures with multiple quantum wells in the active region. The research is completed for LEDs (emission wavelengths 624 nm and 590 nm) under irradiation by fast neutron and gamma-quanta in passive powering mode. Watt-voltage characteristics in the average and high electron injection areas are described as a power function of the operating voltage. It has been revealed that the LEDs transition from average electron injection area to high electron injection area occurs by overcoming the transition area. It disappears as it get closer to the limit result of the irradiation LEDs that is low electron injection mode in the entire supply voltage range. It has been established that the gamma radiation facilitates initial defects restructuring only 42% compared to 100% when irradiation is performed by fast neutrons. Ratio between measured on the boundary between low and average electron injection areas current value and the contribution magnitude of the first stage LEDs emissive power reducing is established. It is allows to predict LEDs resistance to irradiation by fast neutrons and gamma rays.

Kelvin probe microscopy and electronic transport measurements in reduced graphene oxide chemical sensors

NASA Astrophysics Data System (ADS)

Kehayias, Christopher E.; MacNaughton, Samuel; Sonkusale, Sameer; Staii, Cristian

2013-06-01

Reduced graphene oxide (RGO) is an electronically hybrid material that displays remarkable chemical sensing properties. Here, we present a quantitative analysis of the chemical gating effects in RGO-based chemical sensors. The gas sensing devices are patterned in a field-effect transistor geometry, by dielectrophoretic assembly of RGO platelets between gold electrodes deposited on SiO2/Si substrates. We show that these sensors display highly selective and reversible responses to the measured analytes, as well as fast response and recovery times (tens of seconds). We use combined electronic transport/Kelvin probe microscopy measurements to quantify the amount of charge transferred to RGO due to chemical doping when the device is exposed to electron-acceptor (acetone) and electron-donor (ammonia) analytes. We demonstrate that this method allows us to obtain high-resolution maps of the surface potential and local charge distribution both before and after chemical doping, to identify local gate-susceptible areas on the RGO surface, and to directly extract the contact resistance between the RGO and the metallic electrodes. The method presented is general, suggesting that these results have important implications for building graphene and other nanomaterial-based chemical sensors.

Kelvin probe microscopy and electronic transport measurements in reduced graphene oxide chemical sensors.

PubMed

Kehayias, Christopher E; MacNaughton, Samuel; Sonkusale, Sameer; Staii, Cristian

2013-06-21

Reduced graphene oxide (RGO) is an electronically hybrid material that displays remarkable chemical sensing properties. Here, we present a quantitative analysis of the chemical gating effects in RGO-based chemical sensors. The gas sensing devices are patterned in a field-effect transistor geometry, by dielectrophoretic assembly of RGO platelets between gold electrodes deposited on SiO2/Si substrates. We show that these sensors display highly selective and reversible responses to the measured analytes, as well as fast response and recovery times (tens of seconds). We use combined electronic transport/Kelvin probe microscopy measurements to quantify the amount of charge transferred to RGO due to chemical doping when the device is exposed to electron-acceptor (acetone) and electron-donor (ammonia) analytes. We demonstrate that this method allows us to obtain high-resolution maps of the surface potential and local charge distribution both before and after chemical doping, to identify local gate-susceptible areas on the RGO surface, and to directly extract the contact resistance between the RGO and the metallic electrodes. The method presented is general, suggesting that these results have important implications for building graphene and other nanomaterial-based chemical sensors.

Automated batch fiducial-less tilt-series alignment in Appion using Protomo

PubMed Central

Noble, Alex J.; Stagg, Scott M.

2015-01-01

The field of electron tomography has benefited greatly from manual and semi-automated approaches to marker-based tilt-series alignment that have allowed for the structural determination of multitudes of in situ cellular structures as well as macromolecular structures of individual protein complexes. The emergence of complementary metal-oxide semiconductor detectors capable of detecting individual electrons has enabled the collection of low dose, high contrast images, opening the door for reliable correlation-based tilt-series alignment. Here we present a set of automated, correlation-based tilt-series alignment, contrast transfer function (CTF) correction, and reconstruction workflows for use in conjunction with the Appion/Leginon package that are primarily targeted at automating structure determination with cryogenic electron microscopy. PMID:26455557

Wilson Prize article: From vacuum tubes to lasers and back again1

NASA Astrophysics Data System (ADS)

Madey, John M. J.

2014-07-01

The first demonstration of an optical-wavelength laser by Theodore Maiman in 1960 had a transformational impact on the paths that would be blazed to advance the state of the art of short wavelength coherent electron beam-based radiation sources. Free electron lasers (FELs) emerged from these efforts as the electron beam-based realization of the pioneering model of atom-based "optical masers" by Schawlow and Townes, but with far greater potential for tunable operation at high power and very short wavelengths. Further opportunities for yet greater capabilities may be inherent in our still growing understanding of the underlying physics. This article focuses on the FEL efforts in which the author was directly and personally involved.

Development of Clinical Contents Model Markup Language for Electronic Health Records

PubMed Central

Yun, Ji-Hyun; Kim, Yoon

2012-01-01

Objectives To develop dedicated markup language for clinical contents models (CCM) to facilitate the active use of CCM in electronic health record systems. Methods Based on analysis of the structure and characteristics of CCM in the clinical domain, we designed extensible markup language (XML) based CCM markup language (CCML) schema manually. Results CCML faithfully reflects CCM in both the syntactic and semantic aspects. As this language is based on XML, it can be expressed and processed in computer systems and can be used in a technology-neutral way. Conclusions CCML has the following strengths: it is machine-readable and highly human-readable, it does not require a dedicated parser, and it can be applied for existing electronic health record systems. PMID:23115739

High current polarized electron source

NASA Astrophysics Data System (ADS)

Suleiman, R.; Adderley, P.; Grames, J.; Hansknecht, J.; Poelker, M.; Stutzman, M.

2018-05-01

Jefferson Lab operates two DC high voltage GaAs photoguns with compact inverted insulators. One photogun provides the polarized electron beam at the Continuous Electron Beam Accelerator Facility (CEBAF) up to 200 µA. The other gun is used for high average current photocathode lifetime studies at a dedicated test facility up to 4 mA of polarized beam and 10 mA of un-polarized beam. GaAs-based photoguns used at accelerators with extensive user programs must exhibit long photocathode operating lifetime. Achieving this goal represents a significant challenge for proposed facilities that must operate in excess of tens of mA of polarized average current. This contribution describes techniques to maintain good vacuum while delivering high beam currents, and techniques that minimize damage due to ion bombardment, the dominant mechanism that reduces photocathode yield. Advantages of higher DC voltage include reduced space-charge emittance growth and the potential for better photocathode lifetime. Highlights of R&D to improve the performance of polarized electron sources and prolong the lifetime of strained-superlattice GaAs are presented.

Phonon spectrum of single-crystalline FeSe probed by high-resolution electron energy-loss spectroscopy

NASA Astrophysics Data System (ADS)

Zakeri, Khalil; Engelhardt, Tobias; Le Tacon, Matthieu; Wolf, Thomas

2018-06-01

Utilizing high-resolution electron energy-loss spectroscopy (HREELS) we measure the phonon frequencies of β-FeSe(001), cleaved under ultra-high vacuum conditions. At the zone center (Γ bar-point) three prominent loss features are observed at loss energies of about ≃ 20.5 and 25.6 and 40 meV. Based on the scattering selection rules we assign the observed loss features to the A1g, B1g, and A2u phonon modes of β-FeSe(001). The experimentally measured phonon frequencies do not agree with the results of density functional based calculations in which a nonmagnetic, a checkerboard or a strip antiferromagnetic order is assumed for β-FeSe(001). Our measurements suggest that, similar to the other Fe-based materials, magnetism has a profound impact on the lattice dynamics of β-FeSe(001).

High granularity tracker based on a Triple-GEM optically read by a CMOS-based camera

NASA Astrophysics Data System (ADS)

Marafini, M.; Patera, V.; Pinci, D.; Sarti, A.; Sciubba, A.; Spiriti, E.

2015-12-01

The detection of photons produced during the avalanche development in gas chambers has been the subject of detailed studies in the past. The great progresses achieved in last years in the performance of micro-pattern gas detectors on one side and of photo-sensors on the other provide the possibility of making high granularity and very sensitive particle trackers. In this paper, the results obtained with a triple-GEM structure read-out by a CMOS based sensor are described. The use of an He/CF4 (60/40) gas mixture and a detailed optimization of the electric fields made possible to obtain a very high GEM light yield. About 80 photons per primary electron were detected by the sensor resulting in a very good capability of tracking both muons from cosmic rays and electrons from natural radioactivity.

Fringing-field dielectrophoretic assembly of ultrahigh-density semiconducting nanotube arrays with a self-limited pitch

NASA Astrophysics Data System (ADS)

Cao, Qing; Han, Shu-Jen; Tulevski, George S.

2014-09-01

One key challenge of realizing practical high-performance electronic devices based on single-walled carbon nanotubes is to produce electronically pure nanotube arrays with both a minuscule and uniform inter-tube pitch for sufficient device-packing density and homogeneity. Here we develop a method in which the alternating voltage-fringing electric field formed between surface microelectrodes and the substrate is utilized to assemble semiconducting nanotubes into well-aligned, ultrahigh-density and submonolayered arrays, with a consistent pitch as small as 21±6 nm determined by a self-limiting mechanism, based on the unique field focusing and screening effects of the fringing field. Field-effect transistors based on such nanotube arrays exhibit record high device transconductance (>50 μS μm-1) and decent on current per nanotube (~1 μA per tube) together with high on/off ratios at a drain bias of -1 V.

Joining Carbon-Carbon Composites and High-Temperature Materials with High Energy Electron Beams

NASA Technical Reports Server (NTRS)

Goodman, Daniel; Singler, Robert

1998-01-01

1. Program goals addressed during this period. Experimental work was directed at formation of a low-stress bond between carbon- carbon and aluminum, with the objective of minimizing the heating of the aluminum substrate, thereby minimizing stresses resulting from the coefficient of thermal expansion (CTE) difference between the aluminum and carbon-carbon. A second objective was to form a bond between carbon-carbon and aluminum with good thermal conductivity for electronic thermal management (SEM-E) application. 2. Substrates and joining materials selected during this period. Carbon-Carbon Composite (CCC) to Aluminum. CCC (Cu coated) to Aluminum. Soldering compounds based on Sn/Pb and Sn/Ag/Cu/Bi compositions. 3. Soldering experiments performed. Conventional techniques. High Energy Electron Beam (HEEB) process.

Atomic-scale Visualization of Electronic Nematicity and Cooper Pairing in Iron-based Superconductors

NASA Astrophysics Data System (ADS)

Allan, Milan P.

2013-03-01

The mechanism of high-temperature superconductivity in the relatively novel iron-based high-Tc superconductors is unresolved, both in terms of how the phases evolve with doping, and in terms of the actual Cooper pairing process. To explore these issues, we used spectroscopic-imaging scanning tunneling microscopy to study the electronic structure of CaFe2As2 in the antiferromagnetic-orthorhombic `parent' state from which the superconductivity emerges. We discovered and visualized the now widely studied electronic `nematicity' of this phase, whose suppression is associated with the emergence of superconductivity (Science 327, 181, 2010). As subsequent transport experiments discovered a related anisotropic conductance which increases with dopant concentration, the interplay between the electronic structure surrounding each dopant atom, quasiparticle scattering therefrom, and the transport nematicity has become a pivotal focus of research. We find that substituting Co for Fe atoms in underdoped Ca(Fe1-xCox)2As2 generates a dense population of identical and strongly anisotropic impurity states that are distributed randomly but aligned with the antiferromagnetic a-axis. We also demonstrate, by imaging their surrounding interference patterns, that these impurity states scatter quasiparticles and thus influence transport in a highly anisotropic manner (M.P. Allan et al., 2013). Next, we studied the momentum dependence of the energy gaps of iron-based superconductivity, now focusing on LiFeAs. If strong electron-electron interactions mediate the Cooper pairing, then momentum-space anisotropic superconducting energy gaps Δi (k) were predicted by multiple techniques to appear on the different electronic bands i. We introduced intraband Bogoliubov quasiparticle scattering interference (QPI) techniques for the determination of anisotropic energy gaps to test these hypotheses and discovered the anisotropy, magnitude, and relative orientations of the energy gaps on multiple bands (Science 336, 563 (2012)). Finally, the electron-electron interactions generating Cooper pairing are often conjectured to involve bosonic spin fluctuations generated by interband scattering of electrons. We explore the STM signatures of both the interband scattering and the electron-boson coupling self-energy in LiFeAs, and detect the signatures of the electron-boson coupling (M.P. Allan et al., in preparation). In collaboration with A.W. Rost, T.-M. Chuang, F. Massee, M.S. Golden, Y. Xie, M.H. Fisher, E.-A. Kim, K. Lee, Ni Ni, S.L. Bud'ko, P.C. Canfield, Q. Wang, D.S. Dessau, K. Kihou, C.H. Lee, A. Iyo, H. Eisaki, D.J. Scalapino, A.P. Mackenzie and J.C. Davis

Computation of electron transport and relaxation properties in gases based on improved multi-term approximation of Boltzmann equation

NASA Astrophysics Data System (ADS)

Cai, X. J.; Wang, X. X.; Zou, X. B.; Lu, Z. W.

2018-01-01

An understanding of electron kinetics is of importance in various applications of low temperature plasmas. We employ a series of model and real gases to investigate electron transport and relaxation properties based on improved multi-term approximation of the Boltzmann equation. First, a comparison of different methods to calculate the interaction integrals has been carried out; the effects of free parameters, such as vmax, lmax, and the arbitrary temperature Tb, on the convergence of electron transport coefficients are analyzed. Then, the modified attachment model of Ness et al. and SF6 are considered to investigate the effect of attachment on the electron transport properties. The deficiency of the pulsed Townsend technique to measure the electron transport and reaction coefficients in electronegative gases is highlighted when the reduced electric field is small. In order to investigate the effect of external magnetic field on the electron transport properties, Ar plasmas in high power impulse sputtering devices are considered. In the end, the electron relaxation properties of the Reid model under the influence of electric and magnetic fields are demonstrated.

π-Extended Isoindigo-Based Derivative: A Promising Electron-Deficient Building Block for Polymer Semiconductors.

PubMed

Xu, Long; Zhao, Zhiyuan; Xiao, Mingchao; Yang, Jie; Xiao, Jian; Yi, Zhengran; Wang, Shuai; Liu, Yunqi

2017-11-22

The exploration of novel electron-deficient building blocks is a key task for developing high-performance polymer semiconductors in organic thin-film transistors. In view of the situation of the lack of strong electron-deficient building blocks, we designed two novel π-extended isoindigo-based electron-deficient building blocks, IVI and F 4 IVI. Owing to the strong electron-deficient nature and the extended π-conjugated system of the two acceptor units, their copolymers, PIVI2T and PF 4 IVI2T, containing 2,2'-bithiophene donor units, are endowed with deep-lying highest occupied molecular orbital (HOMO)/lowest unoccupied molecular orbital (LUMO) energy levels and strong intermolecular interactions. In comparison to PIVI2T, the fluorinated PF 4 IVI2T exhibits stronger intra- and intermolecular interactions, lower HOMO/LUMO energy levels up to -5.74/-4.17 eV, and more ordered molecular packing with a smaller π-π stacking distance of up to 3.53 Å, resulting in an excellent ambipolar transporting behavior and a promising application in logic circuits for PF 4 IVI2T in ambient with hole and electron mobilities of up to 1.03 and 1.82 cm 2 V -1 s -1 , respectively. The results reveal that F 4 IVI is a promising and strong electron-deficient building unit to construct high-performance semiconducting polymers, which provides an insight into the structure-property relationships for the exploration and molecular engineering of excellent electron-deficient building blocks in the field of organic electronics.

Fused-Ring Acceptors with Asymmetric Side Chains for High-Performance Thick-Film Organic Solar Cells.

PubMed

Feng, Shiyu; Zhang, Cai'e; Liu, Yahui; Bi, Zhaozhao; Zhang, Zhe; Xu, Xinjun; Ma, Wei; Bo, Zhishan

2017-11-01

A kind of new fused-ring electron acceptor, IDT-OB, bearing asymmetric side chains, is synthesized for high-efficiency thick-film organic solar cells. The introduction of asymmetric side chains can increase the solubility of acceptor molecules, enable the acceptor molecules to pack closely in a dislocated way, and form favorable phase separation when blended with PBDB-T. As expected, PBDB-T:IDT-OB-based devices exhibit high and balanced hole and electron mobility and give a high power conversion efficiency (PCE) of 10.12%. More importantly, the IDT-OB-based devices are not very sensitive to the film thickness, a PCE of 9.17% can still be obtained even the thickness of active layer is up to 210 nm. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Wafer scale millimeter-wave integrated circuits based on epitaxial graphene in high data rate communication.

PubMed

Habibpour, Omid; He, Zhongxia Simon; Strupinski, Wlodek; Rorsman, Niklas; Zirath, Herbert

2017-02-01

In recent years, the demand for high data rate wireless communications has increased dramatically, which requires larger bandwidth to sustain multi-user accessibility and quality of services. This can be achieved at millimeter wave frequencies. Graphene is a promising material for the development of millimeter-wave electronics because of its outstanding electron transport properties. Up to now, due to the lack of high quality material and process technology, the operating frequency of demonstrated circuits has been far below the potential of graphene. Here, we present monolithic integrated circuits based on epitaxial graphene operating at unprecedented high frequencies (80-100 GHz). The demonstrated circuits are capable of encoding/decoding of multi-gigabit-per-second information into/from the amplitude or phase of the carrier signal. The developed fabrication process is scalable to large wafer sizes.

Energy Harvesters for Wearable and Stretchable Electronics: From Flexibility to Stretchability.

PubMed

Wu, Hao; Huang, YongAn; Xu, Feng; Duan, Yongqing; Yin, Zhouping

2016-12-01

The rapid advancements of wearable electronics have caused a paradigm shift in consumer electronics, and the emerging development of stretchable electronics opens a new spectrum of applications for electronic systems. Playing a critical role as the power sources for independent electronic systems, energy harvesters with high flexibility or stretchability have been the focus of research efforts over the past decade. A large number of the flexible energy harvesters developed can only operate at very low strain level (≈0.1%), and their limited flexibility impedes their application in wearable or stretchable electronics. Here, the development of highly flexible and stretchable (stretchability >15% strain) energy harvesters is reviewed with emphasis on strategies of materials synthesis, device fabrication, and integration schemes for enhanced flexibility and stretchability. Due to their particular potential applications in wearable and stretchable electronics, energy-harvesting devices based on piezoelectricity, triboelectricity, thermoelectricity, and dielectric elastomers have been largely developed and the progress is summarized. The challenges and opportunities of assembly and integration of energy harvesters into stretchable systems are also discussed. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Measuring electron temperature in the extended corona

NASA Technical Reports Server (NTRS)

Hassler, Donald M.; Gardner, L. D.; Kohl, John L.

1992-01-01

A technique for measuring electron temperature in the extended corona from the line profile of the electron scattered component of coronal H I Ly alpha produced by Thomson scattering of chromospheric Ly alpha emission is discussed. Because of the high thermal velocity of electrons at coronal temperatures (approximately 6800 km/s at T(sub e) = 1,500,000 K) the effect of nonthermal velocities and solar wind flows on the electron velocity distribution are negligible. However, the low electron mass which is responsible for the high thermal velocity also results in a very wide profile (approximately equal to 50 A). This wide profile, together with an intensity that is three orders of magnitude weaker than the resonantly scattered component of Ly alpha makes the direct measurement of T(sub e) a challenging observational problem. An evaluation of this technique based on simulated measurements is presented and the subsequent instrumental requirements necessary to make a meaningful determination of the electron temperature are discussed. Estimates of uncertainties in the measured electron temperature are related to critical instrument parameters such as grating stray light suppression.

Rational design of metal-organic electronic devices: A computational perspective

NASA Astrophysics Data System (ADS)

Chilukuri, Bhaskar

Organic and organometallic electronic materials continue to attract considerable attention among researchers due to their cost effectiveness, high flexibility, low temperature processing conditions and the continuous emergence of new semiconducting materials with tailored electronic properties. In addition, organic semiconductors can be used in a variety of important technological devices such as solar cells, field-effect transistors (FETs), flash memory, radio frequency identification (RFID) tags, light emitting diodes (LEDs), etc. However, organic materials have thus far not achieved the reliability and carrier mobility obtainable with inorganic silicon-based devices. Hence, there is a need for finding alternative electronic materials other than organic semiconductors to overcome the problems of inferior stability and performance. In this dissertation, I research the development of new transition metal based electronic materials which due to the presence of metal-metal, metal-pi, and pi-pi interactions may give rise to superior electronic and chemical properties versus their organic counterparts. Specifically, I performed computational modeling studies on platinum based charge transfer complexes and d 10 cyclo-[M(mu-L)]3 trimers (M = Ag, Au and L = monoanionic bidentate bridging (C/N~C/N) ligand). The research done is aimed to guide experimental chemists to make rational choices of metals, ligands, substituents in synthesizing novel organometallic electronic materials. Furthermore, the calculations presented here propose novel ways to tune the geometric, electronic, spectroscopic, and conduction properties in semiconducting materials. In addition to novel material development, electronic device performance can be improved by making a judicious choice of device components. I have studied the interfaces of a p-type metal-organic semiconductor viz cyclo-[Au(mu-Pz)] 3 trimer with metal electrodes at atomic and surface levels. This work was aimed to guide the device engineers to choose the appropriate metal electrodes considering the chemical interactions at the interface. Additionally, the calculations performed on the interfaces provided valuable insight into binding energies, charge redistribution, change in the energy levels, dipole formation, etc., which are important parameters to consider while fabricating an electronic device. The research described in this dissertation highlights the application of unique computational modeling methods at different levels of theory to guide the experimental chemists and device engineers toward a rational design of transition metal based electronic devices with low cost and high performance.

Band structure and phonon properties of lithium fluoride at high pressure

DOE Office of Scientific and Technical Information (OSTI.GOV)

Panchal, J. M., E-mail: amitjignesh@yahoo.co.in; Department of Physics, University School of Sciences, Gujarat University, Ahmedabad 380009, Gujarat; Joshi, Mitesh

2016-05-23

High pressure structural and electronic properties of Lithium Fluoride (LiF) have been studied by employing an ab-initio pseudopotential method and a linear response scheme within the density functional theory (DFT) in conjunction with quasi harmonic Debye model. The band structure and electronic density of states conforms that the LiF is stable and is having insulator behavior at ambient as well as at high pressure up to 1 Mbar. Conclusions based on Band structure, phonon dispersion and phonon density of states are outlined.

Local electronic effects and irradiation resistance in high-entropy alloys

DOE PAGES

Egami, Takeshi; Stocks, George Malcolm; Nicholson, Don; ...

2015-08-14

High-entropy alloys are multicomponent solid solutions in which various elements with different chemistries and sizes occupy the same crystallographic lattice sites. Thus, none of the atoms perfectly fit the lattice site, giving rise to considerable local lattice distortions and atomic-level stresses. These characteristics can be beneficial for performance under both radiation and in a high-temperature environment, making them attractive candidates as nuclear materials. We discuss electronic origin of the atomic-level stresses based upon first-principles calculations using a density functional theory approach.

Nanoionics-Based Switches for Radio-Frequency Applications

NASA Technical Reports Server (NTRS)

Nessel, James; Lee, Richard

2010-01-01

Nanoionics-based devices have shown promise as alternatives to microelectromechanical systems (MEMS) and semiconductor diode devices for switching radio-frequency (RF) signals in diverse systems. Examples of systems that utilize RF switches include phase shifters for electronically steerable phased-array antennas, multiplexers, cellular telephones and other radio transceivers, and other portable electronic devices. Semiconductor diode switches can operate at low potentials (about 1 to 3 V) and high speeds (switching times of the order of nanoseconds) but are characterized by significant insertion loss, high DC power consumption, low isolation, and generation of third-order harmonics and intermodulation distortion (IMD). MEMS-based switches feature low insertion loss (of the order of 0.2 dB), low DC power consumption (picowatts), high isolation (>30 dB), and low IMD, but contain moving parts, are not highly reliable, and must be operated at high actuation potentials (20 to 60 V) generated and applied by use of complex circuitry. In addition, fabrication of MEMS is complex, involving many processing steps. Nanoionics-based switches offer the superior RF performance and low power consumption of MEMS switches, without need for the high potentials and complex circuitry necessary for operation of MEMS switches. At the same time, nanoionics-based switches offer the high switching speed of semiconductor devices. Also, like semiconductor devices, nanoionics-based switches can be fabricated relatively inexpensively by use of conventional integrated-circuit fabrication techniques. More over, nanoionics-based switches have simple planar structures that can easily be integrated into RF power-distribution circuits.

Applying the Multisim Technology to Teach the Course of High Frequency Power Amplifier

ERIC Educational Resources Information Center

Lv, Gang; Xue, Yuan-Sheng

2011-01-01

As one important professional base course in the electric information specialty, the course of "high frequency electronic circuit" has strong theoretical characteristic and abstract content. To enhance the teaching quality of this course, the computer simulation technology based on Multisim is introduced into the teaching of "high…

Probing the Electronic Structure of - and Electron-Doped High-Temperature Superconductors with Photoemission and X-Ray Absorption Spectroscopies

NASA Astrophysics Data System (ADS)

Lederman, Eli R.

1990-01-01

The electronic structures of hole- and electron -doped high temperature superconductors have been probed using x-ray absorption near-edge spectroscopy (XANES) and photoelectron emission spectroscopy (PES). These measurements have been performed on RBa_2Cu _3O_{rm 7-y} , La_{rm 2-x}Sr _{rm x}CuO _4 and Ln_{rm 2 -x}Ce_{rm x} CuO_{rm 4} for R = Y, Eu and Ln = Nd, Pr and Sm. The parameters x and y have been varied to include a range of hole and electron carrier densities and the undoped parent compounds. Previous XANES and PES results have indicated that unoccupied states of O 2p character can be associated with the carriers in the materials RBa_2 Cu_3O_{ rm 7-y} and La_{ rm 2-x}Sr_{rm x}CuO_4 and that the density of holes increases with O and Sr content, respectively. Conduction was hole-based in all known high-T_{ rm c} cuprates until the recent discovery of superconductivity in Ln_{rm 2-x}Ce_{rm x} CuO_4. Hall coefficient measurements have suggested that the carriers in this system are electrons added with Ce doping. It has been anticipated that these electron-doped materials will provide an important test for models of high temperature superconductivity. PES measurements are presented that show significant Cu 3d character in the valence band of these electron-based materials, but that the Cu^{2+} /Cu^{1+} ratio is unchanged by the level of Ce doping, indicating that doped electrons are itinerant rather than highly correlated. Resonant photoemission from the valence band indicates the presence of unoccupied O 2p states, but these holes are less abundant than in the hole-doped materials. Measurements of XANES at the O 1s edge suggest that unoccupied states of O 2p character in the electron -doped materials are not related to conduction in a simple way. The density of these holes is shown to decrease upon Ce doping and the process of reduction, despite the fact that both are necessary of superconductivity. Furthermore, whereas the O 2p holes are at E_{rm F} in the hole-doped materials, they are ~1 eV above E_{ rm F} in their electron-doped counterparts. A schematic of the band structure is proposed on the basis of these spectroscopic measurements.

Naphthodipyrrolidone (NDP) based conjugated polymers with high electron mobility and ambipolar transport properties

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Haichang; Zhang, Shuo; Mao, Yifan

Two novel donor–acceptor π-conjugated polymers based on naphthodipyrrolidone (NDP) were synthesized and characterized. The polymers possess low band gaps and suitable molecular orbital levels as ambipolar semiconductors. The thin film organic field effect transistor of NDP polymers exhibited ambipolar transport properties with a high electron mobility up to 0.67 cm 2 V –1 s –1. The grazing-incidence wide-angle X-ray scattering (GIWAXS) studies demonstrated that the polymer molecules pack into a long-range-ordered lamellar structure with isotropically oriented crystalline domains. Thermal annealing promoted edge-on lamellar stacking as evidenced by the increased diffraction intensity along the out-of-plane direction. In conclusion, the polymer withmore » NDP and bithiophene units achieved the best edge-on lamellar stacking after thermal annealing, which yielded the best electron transport performance in this work.« less

Naphthodipyrrolidone (NDP) based conjugated polymers with high electron mobility and ambipolar transport properties

DOE PAGES

Zhang, Haichang; Zhang, Shuo; Mao, Yifan; ...

2017-05-12

Two novel donor–acceptor π-conjugated polymers based on naphthodipyrrolidone (NDP) were synthesized and characterized. The polymers possess low band gaps and suitable molecular orbital levels as ambipolar semiconductors. The thin film organic field effect transistor of NDP polymers exhibited ambipolar transport properties with a high electron mobility up to 0.67 cm 2 V –1 s –1. The grazing-incidence wide-angle X-ray scattering (GIWAXS) studies demonstrated that the polymer molecules pack into a long-range-ordered lamellar structure with isotropically oriented crystalline domains. Thermal annealing promoted edge-on lamellar stacking as evidenced by the increased diffraction intensity along the out-of-plane direction. In conclusion, the polymer withmore » NDP and bithiophene units achieved the best edge-on lamellar stacking after thermal annealing, which yielded the best electron transport performance in this work.« less

Super-Joule heating in graphene and silver nanowire network

DOE Office of Scientific and Technical Information (OSTI.GOV)

Maize, Kerry; Das, Suprem R.; Sadeque, Sajia

Transistors, sensors, and transparent conductors based on randomly assembled nanowire networks rely on multi-component percolation for unique and distinctive applications in flexible electronics, biochemical sensing, and solar cells. While conduction models for 1-D and 1-D/2-D networks have been developed, typically assuming linear electronic transport and self-heating, the model has not been validated by direct high-resolution characterization of coupled electronic pathways and thermal response. In this letter, we show the occurrence of nonlinear “super-Joule” self-heating at the transport bottlenecks in networks of silver nanowires and silver nanowire/single layer graphene hybrid using high resolution thermoreflectance (TR) imaging. TR images at the microscopicmore » self-heating hotspots within nanowire network and nanowire/graphene hybrid network devices with submicron spatial resolution are used to infer electrical current pathways. The results encourage a fundamental reevaluation of transport models for network-based percolating conductors.« less

A high resolution on-chip delay sensor with low supply-voltage sensitivity for high-performance electronic systems.

PubMed

Sheng, Duo; Lai, Hsiu-Fan; Chan, Sheng-Min; Hong, Min-Rong

2015-02-13

An all-digital on-chip delay sensor (OCDS) circuit with high delay-measurement resolution and low supply-voltage sensitivity for efficient detection and diagnosis in high-performance electronic system applications is presented. Based on the proposed delay measurement scheme, the quantization resolution of the proposed OCDS can be reduced to several picoseconds. Additionally, the proposed cascade-stage delay measurement circuit can enhance immunity to supply-voltage variations of the delay measurement resolution without extra self-biasing or calibration circuits. Simulation results show that the delay measurement resolution can be improved to 1.2 ps; the average delay resolution variation is 0.55% with supply-voltage variations of ±10%. Moreover, the proposed delay sensor can be implemented in an all-digital manner, making it very suitable for high-performance electronic system applications as well as system-level integration.

Laser-plasma accelerator-based single-cycle attosecond undulator source

NASA Astrophysics Data System (ADS)

Tibai, Z.; Tóth, Gy.; Nagyváradi, A.; Sharma, A.; Mechler, M. I.; Fülöp, J. A.; Almási, G.; Hebling, J.

2018-06-01

Laser-plasma accelerators (LPAs), producing high-quality electron beams, provide an opportunity to reduce the size of free-electron lasers (FELs) to only a few meters. A complete system is proposed here, which is based on FEL technology and consists of an LPA, two undulators, and other magnetic devices. The system is capable to generate carrier-envelope phase stable attosecond pulses with engineered waveform. Pulses with up to 60 nJ energy and 90-400 attosecond duration in the 30-120 nm wavelength range are predicted by numerical simulation. These pulses can be used to investigate ultrafast field-driven electron dynamics in matter.

Development program on a Spindt cold-cathode electron gun

NASA Technical Reports Server (NTRS)

Spindt, C. A.

1982-01-01

A thin film field emission cathode (TFFEC) array and a cold cathode electron gun based on the emitter were developed. A microwave tube gun that uses the thin film field emission cathode as an electron source is produced. State-of-the-art cathodes were fabricated and tested. The tip-packing density of the arrays were increased thereby increasing the cathode's current density capability. The TFFEC is based on the well known field emission effect and was conceived to exploit the advantages of that phenomenon while minimizing the difficulties associated with conventional field emission structures, e.g. limited life and high voltage requirements. Field emission follows the Fowler-Nordheim equation.

Silicon drift detector based X-ray spectroscopy diagnostic system for the study of non-thermal electrons at Aditya tokamak.

PubMed

Purohit, S; Joisa, Y S; Raval, J V; Ghosh, J; Tanna, R; Shukla, B K; Bhatt, S B

2014-11-01

Silicon drift detector based X-ray spectrometer diagnostic was developed to study the non-thermal electron for Aditya tokamak plasma. The diagnostic was mounted on a radial mid plane port at the Aditya. The objective of diagnostic includes the estimation of the non-thermal electron temperature for the ohmically heated plasma. Bi-Maxwellian plasma model was adopted for the temperature estimation. Along with that the study of high Z impurity line radiation from the ECR pre-ionization experiments was also aimed. The performance and first experimental results from the new X-ray spectrometer system are presented.

ARPES investigations of parent compounds of 122 Fe-based superconductors and their 3d transition metal cousins

NASA Astrophysics Data System (ADS)

Richard, Pierre; Zhang, W.-L.; Wu, S.-F.; van Roekeghem, A.; Zhang, P.; Miao, H.; Qian, T.; Nie, S.-M.; Chen, G.-F.; Ding, H.; Xu, N.; Biermann, S.; Capan, C.; Fisk, Z.; Saparov, B. I.; Sefat, A. S.

2015-03-01

It is widely believed that the key ingredients for high-temperature superconductivity are already present in the non-superconducting parent compounds. With its ability to probe the single-particle electronic structure directly in the momentum space, ARPES is a very powerful tool to determine which parameters of the electronic structure are possibly relevant for promoting superconductivity. Here we report ARPES studies on the parent compounds of the 122 family of Fe-based superconductors and their 3 d transition metal pnictide cousins. In particular, we show that the Fe-compound exhibits the largest electronic correlations, possibly a determining factor for unconventional superconductivity.

Physics-Based Modeling and Measurement of High-Flux Condensation Heat Transfer

DTIC Science & Technology

2011-09-01

TRANSFER (Contract No. N000140811139) by Prof. Issam Mudawar Sung-Min Kim Joseph Kim Boiling and Two-Phase Flow Laboratory School of...Final 01-10-2008 to 30-09-2011 Physics-Based Modeling and Measurement of High-Flux Condensation Heat Transfer NA N00014-08-1-1139 NA NA NA NA Mudawar ...respectively. phase change, condensation, electronics cooling, micro-channel, high-flux U U U UU 107 Mudawar , Issam 765-494-5705 Reset PHYSICS-BASED

Improved two-temperature model including electron density of states effects for Au during femtosecond laser pulses

NASA Astrophysics Data System (ADS)

Fang, Ranran; Wei, Hua; Li, Zhihua; Zhang, Duanming

2012-01-01

The electron temperature dependences of the electron-phonon coupling factor and electron heat capacity based on the electron density of states are investigated for precious metal Au under femtosecond laser irradiation. The thermal excitation of d band electrons is found to result in large deviations from the commonly used approximations of linear temperature dependence of the electron heat capacity, and the constant electron-phonon coupling factor. Results of the simulations performed with the two-temperature model demonstrate that the electron-phonon relaxation time becomes short for high fluence laser for Au. The satisfactory agreement between our numerical results and experimental data of threshold fluence indicates that the electron temperature dependence of the thermophysical parameters accounting for the thermal excitation of d band electrons should not be neglected under the condition that electron temperature is higher than 10 4 K.

Nonvolatile memory behavior of nanocrystalline cellulose/graphene oxide composite films

NASA Astrophysics Data System (ADS)

Valentini, L.; Cardinali, M.; Fortunati, E.; Kenny, J. M.

2014-10-01

With the continuous advance of modern electronics, the demand for nonvolatile memory cells rapidly grows. In order to develop post-silicon electronic devices, it is necessary to find innovative solutions to the eco-sustainability problem of materials for nonvolatile memory cells. In this work, we realized a resistive memory device based on graphene oxide (GO) and GO/cellulose nanocrystals (CNC) thin films. Aqueous solutions of GO and GO with CNC have been prepared and drop cast between two metal electrodes. Such thin-film based devices showed a transition between low and high conductivity states upon the forward and backward sweeping of an external electric field. This reversible current density transition behavior demonstrates a typical memory characteristic. The obtained results open an easy route for electronic information storage based on the integration of nanocrystalline cellulose onto graphene based devices.

Botulinum toxin detection using AlGaN /GaN high electron mobility transistors

NASA Astrophysics Data System (ADS)

Wang, Yu-Lin; Chu, B. H.; Chen, K. H.; Chang, C. Y.; Lele, T. P.; Tseng, Y.; Pearton, S. J.; Ramage, J.; Hooten, D.; Dabiran, A.; Chow, P. P.; Ren, F.

2008-12-01

Antibody-functionalized, Au-gated AlGaN /GaN high electron mobility transistors (HEMTs) were used to detect botulinum toxin. The antibody was anchored to the gate area through immobilized thioglycolic acid. The AlGaN /GaN HEMT drain-source current showed a rapid response of less than 5s when the target toxin in a buffer was added to the antibody-immobilized surface. We could detect a range of concentrations from 1to10ng/ml. These results clearly demonstrate the promise of field-deployable electronic biological sensors based on AlGaN /GaN HEMTs for botulinum toxin detection.

Echo-Enabled X-Ray Vortex Generation

NASA Astrophysics Data System (ADS)

Hemsing, E.; Marinelli, A.

2012-11-01

A technique to generate high-brightness electromagnetic vortices with tunable topological charge at extreme ultraviolet and x-ray wavelengths is described. Based on a modified version of echo-enabled harmonic generation for free-electron lasers, the technique uses two lasers and two chicanes to produce high-harmonic microbunching of a relativistic electron beam with a corkscrew distribution that matches the instantaneous helical phase structure of the x-ray vortex. The strongly correlated electron distribution emerges from an efficient three-dimensional recoherence effect in the echo-enabled harmonic generation transport line and can emit fully coherent vortices in a downstream radiator for access to new research in x-ray science.

A solvated electron lithium electrode for secondary batteries

NASA Astrophysics Data System (ADS)

Sammells, A. F.; Semkow, K. W.

1986-09-01

Attention is given to a novel method for the achievement of high electro-chemical reversibility in Li-based nonaqueous cells, using a liquid negative electrode that consists of Li dissolved in liquid ammonia as a solvated electron Li electrode. The containment of this liquid negative active material from direct contact to a liquid nonaqueous electrolyte in the positive electrode compartment was realized through the use of a Li-intercalated, electronically conducting ceramic membrane.

GaN-on-diamond electronic device reliability: Mechanical and thermo-mechanical integrity

NASA Astrophysics Data System (ADS)

Liu, Dong; Sun, Huarui; Pomeroy, James W.; Francis, Daniel; Faili, Firooz; Twitchen, Daniel J.; Kuball, Martin

2015-12-01

The mechanical and thermo-mechanical integrity of GaN-on-diamond wafers used for ultra-high power microwave electronic devices was studied using a micro-pillar based in situ mechanical testing approach combined with an optical investigation of the stress and heat transfer across interfaces. We find the GaN/diamond interface to be thermo-mechanically stable, illustrating the potential for this material for reliable GaN electronic devices.

Plasma production for electron acceleration by resonant plasma wave

NASA Astrophysics Data System (ADS)

Anania, M. P.; Biagioni, A.; Chiadroni, E.; Cianchi, A.; Croia, M.; Curcio, A.; Di Giovenale, D.; Di Pirro, G. P.; Filippi, F.; Ghigo, A.; Lollo, V.; Pella, S.; Pompili, R.; Romeo, S.; Ferrario, M.

2016-09-01

Plasma wakefield acceleration is the most promising acceleration technique known nowadays, able to provide very high accelerating fields (10-100 GV/m), enabling acceleration of electrons to GeV energy in few centimeter. However, the quality of the electron bunches accelerated with this technique is still not comparable with that of conventional accelerators (large energy spread, low repetition rate, and large emittance); radiofrequency-based accelerators, in fact, are limited in accelerating field (10-100 MV/m) requiring therefore hundred of meters of distances to reach the GeV energies, but can provide very bright electron bunches. To combine high brightness electron bunches from conventional accelerators and high accelerating fields reachable with plasmas could be a good compromise allowing to further accelerate high brightness electron bunches coming from LINAC while preserving electron beam quality. Following the idea of plasma wave resonant excitation driven by a train of short bunches, we have started to study the requirements in terms of plasma for SPARC_LAB (Ferrario et al., 2013 [1]). In particular here we focus on hydrogen plasma discharge, and in particular on the theoretical and numerical estimates of the ionization process which are very useful to design the discharge circuit and to evaluate the current needed to be supplied to the gas in order to have full ionization. Eventually, the current supplied to the gas simulated will be compared to that measured experimentally.

Measurements and modeling of charge carrier lifetime in compressed xenon

NASA Astrophysics Data System (ADS)

Pudov, A. O.; Abyzov, A. S.; Sokolov, S. A.; Davydov, L. N.; Rybka, A. V.; Kutny, V. E.; Melnikov, S. I.; Kholomyeyev, G. A.; Leonov, S. A.; Turchin, A. A.

2018-06-01

Gamma-spectrometers based on high-pressure xenon gas (HPXe) are proving themselves as a great potential alternative to the spectrometers based on high-purity germanium crystals and scintillators. The working medium for the high-resolution HPXe detectors, that is, xenon gas compressed up to pressure ∼50 bar and sometimes doped with hydrogen, methane or others gases, needs to be of very high purity. The gas purity level can be determined by direct measurements or, alternatively, its usability in gamma-spectrometers can be evaluated indirectly through the charge carrier (electron) lifetime measurements. Different approaches and specific setups have been used for the lifetime determination, most of those methods involve the measurement and analyses of individual pulses from ionizing particles registered in an ionization chamber filled with Xe. In the present paper, we report on the HPXe electron lifetime study carried out by using measurements in a cylindrical ionization chamber and the respective analytical charge transport model. Our results support the possibility of carrier lifetime determination in the cylindrical configuration. In addition, the voltage regimes for the use of the chamber in the spectroscopic mode were determined. The measurements were conducted in a two-electrode configuration for a range of pressure values (5 to 50 bar) for the Xe+0.25%H2 gas mixture of ∼6N purity. It is shown that in gases with relatively high values of the electron drift velocity and the electron lifetime, for example low-density gases, the charge collection time measurements can give significantly underestimated lifetime assessment. On the other hand, for the low drift velocity gases, they give much more accurate results. With the use of the analytical model, the electron lifetime was determined more precisely.

Electron beam dynamics in an ultrafast transmission electron microscope with Wehnelt electrode.

PubMed

Bücker, K; Picher, M; Crégut, O; LaGrange, T; Reed, B W; Park, S T; Masiel, D J; Banhart, F

2016-12-01

High temporal resolution transmission electron microscopy techniques have shown significant progress in recent years. Using photoelectron pulses induced by ultrashort laser pulses on the cathode, these methods can probe ultrafast materials processes and have revealed numerous dynamic phenomena at the nanoscale. Most recently, the technique has been implemented in standard thermionic electron microscopes that provide a flexible platform for studying material's dynamics over a wide range of spatial and temporal scales. In this study, the electron pulses in such an ultrafast transmission electron microscope are characterized in detail. The microscope is based on a thermionic gun with a Wehnelt electrode and is operated in a stroboscopic photoelectron mode. It is shown that the Wehnelt bias has a decisive influence on the temporal and energy spread of the picosecond electron pulses. Depending on the shape of the cathode and the cathode-Wehnelt distance, different emission patterns with different pulse parameters are obtained. The energy spread of the pulses is determined by space charge and Boersch effects, given by the number of electrons in a pulse. However, filtering effects due to the chromatic aberrations of the Wehnelt electrode allow the extraction of pulses with narrow energy spreads. The temporal spread is governed by electron trajectories of different length and in different electrostatic potentials. High temporal resolution is obtained by excluding shank emission from the cathode and aberration-induced halos in the emission pattern. By varying the cathode-Wehnelt gap, the Wehnelt bias, and the number of photoelectrons in a pulse, tradeoffs between energy and temporal resolution as well as beam intensity can be made as needed for experiments. Based on the characterization of the electron pulses, the optimal conditions for the operation of ultrafast TEMs with thermionic gun assembly are elaborated. Copyright © 2016 Elsevier B.V. All rights reserved.

Packaging Technologies for 500 C SiC Electronics and Sensors: Challenges in Material Science and Technology

NASA Technical Reports Server (NTRS)

Chen, Liang-Yu; Neudeck, Philip G.; Behelm, Glenn M.; Spry, David J.; Meredith, Roger D.; Hunter, Gary W.

2015-01-01

This paper presents ceramic substrates and thick-film metallization based packaging technologies in development for 500C silicon carbide (SiC) electronics and sensors. Prototype high temperature ceramic chip-level packages and printed circuit boards (PCBs) based on ceramic substrates of aluminum oxide (Al2O3) and aluminum nitride (AlN) have been designed and fabricated. These ceramic substrate-based chip-level packages with gold (Au) thick-film metallization have been electrically characterized at temperatures up to 550C. The 96 alumina packaging system composed of chip-level packages and PCBs has been successfully tested with high temperature SiC discrete transistor devices at 500C for over 10,000 hours. In addition to tests in a laboratory environment, a SiC junction field-effect-transistor (JFET) with a packaging system composed of a 96 alumina chip-level package and an alumina printed circuit board was tested on low earth orbit for eighteen months via a NASA International Space Station experiment. In addition to packaging systems for electronics, a spark-plug type sensor package based on this high temperature interconnection system for high temperature SiC capacitive pressure sensors was also developed and tested. In order to further significantly improve the performance of packaging system for higher packaging density, higher operation frequency, power rating, and even higher temperatures, some fundamental material challenges must be addressed. This presentation will discuss previous development and some of the challenges in material science (technology) to improve high temperature dielectrics for packaging applications.

Electrical characteristics of high-power AlGaN-GaN high electron mobility transistors irradiated with protons and heavy ions

NASA Astrophysics Data System (ADS)

Sin, Yongkun; Bonsall, Jeremy; Lingley, Zachary; Brodie, Miles; Mason, Maribeth

2017-02-01

High electron mobility transistors (HEMTs) based on AlGaN-GaN hetero-structures are finding an increasing number of commercial and military applications that require high voltage, high power, and high efficiency operation. In recent years, leading GaN HEMT manufacturers have reported excellent RF power characteristics and encouraging reliability, but long-term reliability in the space environment still remains a major concern due to a large number of defects and traps present both in the bulk as well as at the surface, leading to undesirable characteristics including current collapse. Furthermore, degradation mechanisms in GaN HEMTs are still not well understood. Thus, reliability and radiation effects of GaN HEMTs should be studied before solid state power amplifiers (SSPAs) based on GaN HEMT technology are successfully deployed in space satellite systems. For the present study, we investigated electrical characteristics of high-power GaN HEMTs irradiated with protons and heavy ions under various irradiation and biasing conditions.

Structural Evolution of Li xNi yMn zCo 1-y-zO 2 Cathode Materials during High-Rate Charge and Discharge

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hwang, Sooyeon; Jo, Eunmi; Chung, Kyung Yoon

Ni-rich lithium transition metal oxides have received significant attention due to their high capacities and rate capabilities determined via theoretical calculations. Although the structural properties of these materials are strongly correlated with the electrochemical performance, their structural stability during the high-rate electrochemical reactions has not been fully evaluated yet. In this work, transmission electron microscopy is used to investigate the crystallographic and electronic structural modifications of Ni-based cathode materials at a high charge/discharge rate of 10 C. It is found that the high-rate electrochemical reactions induce structural inhomogeneity near the surface of Ni-rich cathode materials, which limits Li transport andmore » reduces their capacities. Furthermore, this study establishes a correlation between the high-rate electrochemical performance of the Ni-based materials and their structural evolution, which can provide profound insights for designing novel cathode materials having both high energy and power densities.« less

Structural Evolution of Li xNi yMn zCo 1-y-zO 2 Cathode Materials during High-Rate Charge and Discharge

DOE PAGES

Hwang, Sooyeon; Jo, Eunmi; Chung, Kyung Yoon; ...

2017-11-08

Ni-rich lithium transition metal oxides have received significant attention due to their high capacities and rate capabilities determined via theoretical calculations. Although the structural properties of these materials are strongly correlated with the electrochemical performance, their structural stability during the high-rate electrochemical reactions has not been fully evaluated yet. In this work, transmission electron microscopy is used to investigate the crystallographic and electronic structural modifications of Ni-based cathode materials at a high charge/discharge rate of 10 C. It is found that the high-rate electrochemical reactions induce structural inhomogeneity near the surface of Ni-rich cathode materials, which limits Li transport andmore » reduces their capacities. Furthermore, this study establishes a correlation between the high-rate electrochemical performance of the Ni-based materials and their structural evolution, which can provide profound insights for designing novel cathode materials having both high energy and power densities.« less

High performance flexible electronics for biomedical devices.

PubMed

Salvatore, Giovanni A; Munzenrieder, Niko; Zysset, Christoph; Kinkeldei, Thomas; Petti, Luisa; Troster, Gerhard

2014-01-01

Plastic electronics is soft, deformable and lightweight and it is suitable for the realization of devices which can form an intimate interface with the body, be implanted or integrated into textile for wearable and biomedical applications. Here, we present flexible electronics based on amorphous oxide semiconductors (a-IGZO) whose performance can achieve MHz frequency even when bent around hair. We developed an assembly technique to integrate complex electronic functionalities into textile while preserving the softness of the garment. All this and further developments can open up new opportunities in health monitoring, biotechnology and telemedicine.

Electron-phonon Interactions in HTSC Cuprates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Egami, T.; Chung, J.-H.; McQueeny, R. J.

Phonons have been generally considered to be irrelevant to the high-temperature superconductivity in the cuprates. However, such a bias is usually based upon the assumption of conventional electron-phonon coupling, while in the cuprates the coupling can be rather unconventional because of strong electron correlation. We present the results of our recent measurements of phonon dispersion in YBa{sub 2}Cu{sub 3}O{sub 6+x} by inelastic neutron scattering. These suggest certain phonon modes interact strongly with electrons and are closely involved in the superconductivity phenomenon with possible contribution to pairing.

Molecules with enhanced electronic polarizabilities based on defect-like states in conjugated polymers

NASA Technical Reports Server (NTRS)

Beratan, David N. (Inventor)

1991-01-01

Highly conjugated organic polymers typically have large non-resonant electronic susceptibilities, which give the molecules unusual optical properties. To enhance these properties, defects are introduced into the polymer chain. Examples include light doping of the conjugated polymer and synthesis, conjugated polymers which incorporate either electron donating or accepting groups, and conjugated polymers which contain a photoexcitable species capable of reversibly transferring its electron to an acceptor. Such defects in the chain permit enhancement of the second hyperpolarizability by at least an order of magnitude.

Fermi LAT Observations of Cosmic-Ray Electrons

NASA Technical Reports Server (NTRS)

Moiseev, Alexander

2011-01-01

Designed as a gamma-ray instrument, the LAT is a capable detector of high energy cosmic ray electrons. The LAT is composed of a 4x4 array of identical towers. Each tower has a Tracker and a Calorimeter module. Entire LAT is covered by segmented Anti-Coincidence Detector (ACD). The electron data analysis is based on that developed for photons. The main challenge is to identify and separate electrons from all other charged species, mainly CR protons (for gamma-ray analysis this is provided by the Anti-Coincidence Detector)

Efficient optical injection locking of electronic oscillators

NASA Astrophysics Data System (ADS)

Cochran, S. R.; Wang, S. Y.

1989-05-01

The paper presents techniques for direct optical injection locking of electronic oscillators and analyzes the problem of direct optical injection locking of a common-source FET oscillator using a high impedance optoelectronic transducer. A figure-of-merit for optically injection locked oscillators is defined, and an experimental oscillator based on the design criteria was fabricated. The oscillator achieved efficient, high power operation and moderate locking bandwidth with small locking signal magnitude. The experimental results are consistent with the theoretical model.

Kinase detection with gallium nitride based high electron mobility transistors

PubMed Central

Makowski, Matthew S.; Bryan, Isaac; Sitar, Zlatko; Arellano, Consuelo; Xie, Jinqiao; Collazo, Ramon; Ivanisevic, Albena

2013-01-01

A label-free kinase detection system was fabricated by the adsorption of gold nanoparticles functionalized with kinase inhibitor onto AlGaN/GaN high electron mobility transistors (HEMTs). The HEMTs were operated near threshold voltage due to the greatest sensitivity in this operational region. The Au NP/HEMT biosensor system electrically detected 1 pM SRC kinase in ionic solutions. These results are pertinent to drug development applications associated with kinase sensing. PMID:23918992

Dosimetric response for crystalline and nanostructured aluminium oxide to a high-current pulse electron beam.

PubMed

Nikiforov, S V; Kortov, V S

2014-11-01

The main thermoluminescent (TL) and dosimetric properties of the detectors based on anion-defective crystalline and nanostructured aluminium oxide after exposure to a high-current pulse electron beam are studied. TL peaks associated with deep-trapping centres are registered. It is shown that the use of deep-trap TL at 200-600°С allows registering absorbed doses up to 750 kGy for single-crystalline detectors and those up to 6 kGy for nanostructured ones. A wide range of the doses registered, high reproducibility of the TL signal and low fading contribute to a possibility of using single-crystalline and nanostructured aluminium oxide for the dosimetry of high-current pulse electron beams. © The Author 2014. Published by Oxford University Press. All rights reserved. For Permissions, please email: journals.permissions@oup.com.

Systematic investigation of structural, electronic, optical and thermal properties of ternary MoAlB; an ab initio approach

NASA Astrophysics Data System (ADS)

Rajpoot, Priyanka; Rastogi, Anugya; Verma, U. P.

2018-02-01

Structural, electronic, optical and thermal properties of molybdenum aluminum boride (MoAlB) have been analyzed systematically using the full potential linearized augmented plane wave method based on density functional theory at ambient condition as well as high pressure and high temperature. Density of states and band structure calculation reflect the metallic character of MoAlB. In addition to this, the electron charge density calculation reveals the strong covalent bonding, in between ‘B’ atoms as well as ‘Mo’ and ‘B’ atoms. Optical parameters exhibit anisotropic nature and MoAlB become transparent in ultraviolet region for the radiation of energy above 25 eV. The thermal properties were investigated by using the quasi-harmonic Debye model at high temperature and high pressure.

Facile synthesis of α-Fe{sub 2}O{sub 3} nanoparticles for high-performance CO gas sensor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cuong, Nguyen Duc, E-mail: nguyenduccuong@hueuni.edu.vn; Faculty of Hospitality and Tourism, Hue University, 22 Lam Hoang, Vy Da Ward, Hue City; Khieu, Dinh Quang

2015-08-15

Highlights: • We have demonstrated a facile method to prepare Fe{sub 2}O{sub 3} nanoparticles. • The gas sensing properties of α-Fe{sub 2}O{sub 3} have been invested. • The results show potential application of α-Fe{sub 2}O{sub 3} NPs for CO sensors in environmental monitoring. - Abstract: Iron oxide nanoparticles (NPs) were prepared via a simple hydrothermal method for high performance CO gas sensor. The synthesized α-Fe{sub 2}O{sub 3} NPs were characterized by X-ray diffraction, nitrogen adsorption/desorption isotherm, scanning electron microscopy (SEM), transmission electron microscopy (TEM), high-resolution transmission electron microscopy (HRTEM), and selected area electron diffraction (SAED). The SEM, TEM results revealedmore » that obtained α-Fe{sub 2}O{sub 3} particles had a peanut-like geometry with hemispherical ends. The response of the α-Fe{sub 2}O{sub 3} NPs based sensor to carbon monoxide (CO) and various concentrations of other gases were measured at different temperatures. It found that the sensor based on the peanut-like α-Fe{sub 2}O{sub 3} NPs exhibited high response, fast response–recovery, and good selectivity to CO at 300 °C. The experimental results clearly demonstrated the potential application of α-Fe{sub 2}O{sub 3} NPs as a good sensing material in the fabrication of CO sensor.« less

Low-Altitude Satellite Measurements of Pulsating Auroral Electrons

NASA Technical Reports Server (NTRS)

Samara, M.; Michell, R. G.; Redmon, R. J.

2015-01-01

We present observations from the Defense Meteorological Satellite Program and Reimei satellites, where common-volume high-resolution ground-based auroral imaging data are available. These satellite overpasses of ground-based all-sky imagers reveal the specific features of the electron populations responsible for different types of pulsating aurora modulations. The energies causing the pulsating aurora mostly range from 3 keV to 20 keV but can at times extend up to 30 keV. The secondary, low-energy electrons (<1 keV) are diminished from the precipitating distribution when there are strong temporal variations in auroral intensity. There are often persistent spatial structures present inside regions of pulsating aurora, and in these regions there are secondary electrons in the precipitating populations. The reduction of secondary electrons is consistent with the strongly temporally varying pulsating aurora being associated with field-aligned currents and hence parallel potential drops of up to 1 kV.

Design of sub-Angstrom compact free-electron laser source

NASA Astrophysics Data System (ADS)

Bonifacio, Rodolfo; Fares, Hesham; Ferrario, Massimo; McNeil, Brian W. J.; Robb, Gordon R. M.

2017-01-01

In this paper, we propose for first time practical parameters to construct a compact sub-Angstrom Free Electron Laser (FEL) based on Compton backscattering. Our recipe is based on using picocoulomb electron bunch, enabling very low emittance and ultracold electron beam. We assume the FEL is operating in a quantum regime of Self Amplified Spontaneous Emission (SASE). The fundamental quantum feature is a significantly narrower spectrum of the emitted radiation relative to classical SASE. The quantum regime of the SASE FEL is reached when the momentum spread of the electron beam is smaller than the photon recoil momentum. Following the formulae describing SASE FEL operation, realistic designs for quantum FEL experiments are proposed. We discuss the practical constraints that influence the experimental parameters. Numerical simulations of power spectra and intensities are presented and attractive radiation characteristics such as high flux, narrow linewidth, and short pulse structure are demonstrated.

Precision shape modification of nanodevices with a low-energy electron beam

DOEpatents

Zettl, Alex; Yuzvinsky, Thomas David; Fennimore, Adam

2010-03-09

Methods of shape modifying a nanodevice by contacting it with a low-energy focused electron beam are disclosed here. In one embodiment, a nanodevice may be permanently reformed to a different geometry through an application of a deforming force and a low-energy focused electron beam. With the addition of an assist gas, material may be removed from the nanodevice through application of the low-energy focused electron beam. The independent methods of shape modification and material removal may be used either individually or simultaneously. Precision cuts with accuracies as high as 10 nm may be achieved through the use of precision low-energy Scanning Electron Microscope scan beams. These methods may be used in an automated system to produce nanodevices of very precise dimensions. These methods may be used to produce nanodevices of carbon-based, silicon-based, or other compositions by varying the assist gas.

Micrometer-Scale Ballistic Transport of Electron Pairs in LaAlO_{3}/SrTiO_{3} Nanowires.

PubMed

Tomczyk, Michelle; Cheng, Guanglei; Lee, Hyungwoo; Lu, Shicheng; Annadi, Anil; Veazey, Joshua P; Huang, Mengchen; Irvin, Patrick; Ryu, Sangwoo; Eom, Chang-Beom; Levy, Jeremy

2016-08-26

High-mobility complex-oxide heterostructures and nanostructures offer new opportunities for extending the paradigm of quantum transport beyond the realm of traditional III-V or carbon-based materials. Recent quantum transport investigations with LaAlO_{3}/SrTiO_{3}-based quantum dots reveal the existence of a strongly correlated phase in which electrons form spin-singlet pairs without becoming superconducting. Here, we report evidence for the micrometer-scale ballistic transport of electron pairs in quasi-1D LaAlO_{3}/SrTiO_{3} nanowire cavities. In the paired phase, Fabry-Perot-like quantum interference is observed, in sync with conductance oscillations observed in the superconducting regime (at a zero magnetic field). Above a critical magnetic field B_{p}, the electron pairs unbind and the conductance oscillations shift with the magnetic field. These experimental observations extend the regime of ballistic electronic transport to strongly correlated phases.

Low-Temperature Postfunctionalization of Highly Conductive Oxide Thin-Films toward Solution-Based Large-Scale Electronics.

PubMed

Ban, Seok-Gyu; Kim, Kyung-Tae; Choi, Byung Doo; Jo, Jeong-Wan; Kim, Yong-Hoon; Facchetti, Antonio; Kim, Myung-Gil; Park, Sung Kyu

2017-08-09

Although transparent conducting oxides (TCOs) have played a key role in a wide range of solid-state electronics from conventional optoelectronics to emerging electronic systems, the processing temperature and conductivity of solution-processed materials seem to be far exceeding the thermal limitations of soft materials and insufficient for high-perfomance large-area systems, respectively. Here, we report a strategy to form highly conductive and scalable solution-processed oxide materials and their successful translation into large-area electronic applications, which is enabled by photoassisted postfunctionalization at low temperature. The low-temperature fabrication of indium-tin-oxide (ITO) thin films was achieved by using photoignited combustion synthesis combined with photoassisted reduction process under hydrogen atmosphere. It was noteworthy that the photochemically activated hydrogens on ITO surface could be triggered to facilitate highly crystalline oxygen deficient structure allowing significant increase of carrier concentration and mobility through film microstructure modifications. The low-temperature postfunctionalized ITO films demonstrated conductivity of >1607 S/cm and sheet resistance of <104 Ω/□ under the process temperature of less than 300 °C, which are comparable to those of vacuum-deposited and high-temperature annealed ITO films. Based on the photoassisted postfunctionalization route, all-solution-processed transparent metal-oxide thin-film-transistors and large-area integrated circuits with the ITO bus lines were demonstrated, showing field-effect mobilities of >6.5 cm 2 V -1 s -1 with relatively good operational stability and oscillation frequency of more than 1 MHz in 7-stage ring oscillators, respectively.

Enhancing and optimizing electronic transport in biphenyl derivative single-molecule junctions attached to carbon nanotubes electrodes

NASA Astrophysics Data System (ADS)

Reis-Silva, J. C.; Ferreira, D. F. S.; Leal, J. F. P.; Pinheiro, F. A.; Del Nero, J.

2017-02-01

We investigate, by means of ab initio calculations based on non-equilibrium Green's function method coupled to density function theory, electronic transport in molecular junctions composed of biphenyl (BP) and biphenyl within (-2H+) defect (BP2D) molecules attached to metallic (9,0) carbon nanotubes. We demonstrate that the BP2D junction exhibits unprecedented electronic transport properties, and that its conductance can be up to three orders of magnitude higher than biphenyl single-molecule junctions. These findings are explained in terms of the non-planar molecular conformation of BP2D, and of the stronger electronic coupling between the BP2D molecule and the organic electrodes, which confers high stability to the junction. Our results suggest that BP2D attached to carbon nanotubes can be explored as an efficient and highly stable platform in single-molecule electronics with extraordinary transport properties.

Direct in situ observation of the electron-driven synthesis of Ag filaments on α-Ag2WO4 crystals

PubMed Central

Longo, E.; Cavalcante, L. S.; Volanti, D. P.; Gouveia, A. F.; Longo, V. M.; Varela, J. A.; Orlandi, M. O.; Andrés, J.

2013-01-01

In this letter, we report, for the first time, the real-time in situ nucleation and growth of Ag filaments on α-Ag2WO4 crystals driven by an accelerated electron beam from an electronic microscope under high vacuum. We employed several techniques to characterise the material in depth. By using these techniques combined with first-principles modelling based on density functional theory, a mechanism for the Ag filament formation followed by a subsequent growth process from the nano- to micro-scale was proposed. In general, we have shown that an accelerated electron beam from an electronic microscope under high vacuum enables in situ visualisation of Ag filaments with subnanometer resolution and offers great potential for addressing many fundamental issues in materials science, chemistry, physics and other fields of science. PMID:23591807

Hydrated Electrons React with High Specificity with Cisplatin Bound to Single-Stranded DNA

PubMed Central

Behmand, B.; Cloutier, P.; Girouard, S.; Wagner, J. R.; Sanche, L.; Hunting, D. J.

2015-01-01

Short oligonucleotides TTTTTGTGTTT and TTTTTTTGTTT in solution with and without cisplatin (cisPt) bound to the guanine bases were irradiated with γ-rays at doses varying from 0 to 2500 Gy. To determine the effect of hydrated electrons from water radiolysis on the oligonucleotides, we quenched •OH radicals with ethylenediaminetetraacetic acid (EDTA) and displaced oxygen, which reacts with hydrated electrons, by bubbling the solution with wet nitrogen. DNA strand breaks and platinum detachment were quantified by gel electrophoresis. Our results demonstrate that hydrated electrons react almost exclusively at the position of the cisPt adduct, where they induce cisPt detachment from one or both guanines in the oligonucleotide. Given the high yield of hydrated electrons in irradiated tissues, this reaction may be an important step in the mechanism of radiosensitization of DNA by cisPt. PMID:24205952

High-mobility ultrathin semiconducting films prepared by spin coating.

PubMed

Mitzi, David B; Kosbar, Laura L; Murray, Conal E; Copel, Matthew; Afzali, Ali

2004-03-18

The ability to deposit and tailor reliable semiconducting films (with a particular recent emphasis on ultrathin systems) is indispensable for contemporary solid-state electronics. The search for thin-film semiconductors that provide simultaneously high carrier mobility and convenient solution-based deposition is also an important research direction, with the resulting expectations of new technologies (such as flexible or wearable computers, large-area high-resolution displays and electronic paper) and lower-cost device fabrication. Here we demonstrate a technique for spin coating ultrathin (approximately 50 A), crystalline and continuous metal chalcogenide films, based on the low-temperature decomposition of highly soluble hydrazinium precursors. We fabricate thin-film field-effect transistors (TFTs) based on semiconducting SnS(2-x)Se(x) films, which exhibit n-type transport, large current densities (>10(5) A cm(-2)) and mobilities greater than 10 cm2 V(-1) s(-1)--an order of magnitude higher than previously reported values for spin-coated semiconductors. The spin-coating technique is expected to be applicable to a range of metal chalcogenides, particularly those based on main group metals, as well as for the fabrication of a variety of thin-film-based devices (for example, solar cells, thermoelectrics and memory devices).

High-mobility ultrathin semiconducting films prepared by spin coating

NASA Astrophysics Data System (ADS)

Mitzi, David B.; Kosbar, Laura L.; Murray, Conal E.; Copel, Matthew; Afzali, Ali

2004-03-01

The ability to deposit and tailor reliable semiconducting films (with a particular recent emphasis on ultrathin systems) is indispensable for contemporary solid-state electronics. The search for thin-film semiconductors that provide simultaneously high carrier mobility and convenient solution-based deposition is also an important research direction, with the resulting expectations of new technologies (such as flexible or wearable computers, large-area high-resolution displays and electronic paper) and lower-cost device fabrication. Here we demonstrate a technique for spin coating ultrathin (~50Å), crystalline and continuous metal chalcogenide films, based on the low-temperature decomposition of highly soluble hydrazinium precursors. We fabricate thin-film field-effect transistors (TFTs) based on semiconducting SnS2-xSex films, which exhibit n-type transport, large current densities (>105Acm-2) and mobilities greater than 10cm2V-1s-1-an order of magnitude higher than previously reported values for spin-coated semiconductors. The spin-coating technique is expected to be applicable to a range of metal chalcogenides, particularly those based on main group metals, as well as for the fabrication of a variety of thin-film-based devices (for example, solar cells, thermoelectrics and memory devices).

The fully relativistic implementation of the convergent close-coupling method

NASA Astrophysics Data System (ADS)

Bostock, Christopher James

2011-04-01

The calculation of accurate excitation and ionization cross sections for electron collisions with atoms and ions plays a fundamental role in atomic and molecular physics, laser physics, x-ray spectroscopy, plasma physics and chemistry. Within the veil of plasma physics lie important research areas affiliated with the lighting industry, nuclear fusion and astrophysics. For high energy projectiles or targets with a large atomic number it is presently understood that a scattering formalism based on the Dirac equation is required to incorporate relativistic effects. This tutorial outlines the development of the relativistic convergent close-coupling (RCCC) method and highlights the following three main accomplishments. (i) The inclusion of the Breit interaction, a relativistic correction to the Coulomb potential, in the RCCC method. This led to calculations that resolved a discrepancy between theory and experiment for the polarization of x-rays emitted by highly charged hydrogen-like ions excited by electron impact (Bostock et al 2009 Phys. Rev. A 80 052708). (ii) The extension of the RCCC method to accommodate two-electron and quasi-two-electron targets. The method was applied to electron scattering from mercury. Accurate plasma physics modelling of mercury-based fluorescent lamps requires detailed information on a large number of electron impact excitation cross sections involving transitions between various states (Bostock et al 2010 Phys. Rev. A 82 022713). (iii) The third accomplishment outlined in this tutorial is the restructuring of the RCCC computer code to utilize a hybrid OpenMP-MPI parallelization scheme which now enables the RCCC code to run on the latest high performance supercomputer architectures.

Development of a picosecond CO2 laser system for a high-repetition γ-source

NASA Astrophysics Data System (ADS)

Polyanskiy, Mikhail N.; Pogorelsky, Igor V.; Yakimenko, Vitaly E.; Platonenko, Victor T.

2008-10-01

The concept of a high-repetition-rate, high-average power γ-source is based on Compton backscattering from the relativistic electron beam inside a picosecond CO2 laser cavity. Proof-of-principle experiments combined with comput

Study of a high power hydrogen beam diagnostic based on secondary electron emission

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sartori, E., E-mail: emanuele.sartori@igi.cnr.it; Department of Management and Engineering, University di Padova strad. S. Nicola 3, 36100 Vicenza; Panasenkov, A.

2016-11-15

In high power neutral beams for fusion, beam uniformity is an important figure of merit. Knowing the transverse power profile is essential during the initial phases of beam source operation, such as those expected for the ITER heating neutral beam (HNB) test facility. To measure it a diagnostic technique is proposed, based on the collection of secondary electrons generated by beam-surface and beam-gas interactions, by an array of positively biased collectors placed behind the calorimeter tubes. This measurement showed in the IREK test stand good proportionality to the primary beam current. To investigate the diagnostic performances in different conditions, wemore » developed a numerical model of secondary electron emission, induced by beam particle impact on the copper tubes, and reproducing the cascade of secondary emission caused by successive electron impacts. The model is first validated against IREK measurements. It is then applied to the HNB case, to assess the locality of the measurement, the proportionality to the beam current density, and the influence of beam plasma.« less

Terahertz spin current pulses controlled by magnetic heterostructures

NASA Astrophysics Data System (ADS)

Kampfrath, T.; Battiato, M.; Maldonado, P.; Eilers, G.; Nötzold, J.; Mährlein, S.; Zbarsky, V.; Freimuth, F.; Mokrousov, Y.; Blügel, S.; Wolf, M.; Radu, I.; Oppeneer, P. M.; Münzenberg, M.

2013-04-01

In spin-based electronics, information is encoded by the spin state of electron bunches. Processing this information requires the controlled transport of spin angular momentum through a solid, preferably at frequencies reaching the so far unexplored terahertz regime. Here, we demonstrate, by experiment and theory, that the temporal shape of femtosecond spin current bursts can be manipulated by using specifically designed magnetic heterostructures. A laser pulse is used to drive spins from a ferromagnetic iron thin film into a non-magnetic cap layer that has either low (ruthenium) or high (gold) electron mobility. The resulting transient spin current is detected by means of an ultrafast, contactless amperemeter based on the inverse spin Hall effect, which converts the spin flow into a terahertz electromagnetic pulse. We find that the ruthenium cap layer yields a considerably longer spin current pulse because electrons are injected into ruthenium d states, which have a much lower mobility than gold sp states. Thus, spin current pulses and the resulting terahertz transients can be shaped by tailoring magnetic heterostructures, which opens the door to engineering high-speed spintronic devices and, potentially, broadband terahertz emitters.

Electron energy loss spectroscopy on semiconductor heterostructures for optoelectronics and photonics applications.

PubMed

Eljarrat, A; López-Conesa, L; Estradé, S; Peiró, F

2016-05-01

In this work, we present characterization methods for the analysis of nanometer-sized devices, based on silicon and III-V nitride semiconductor materials. These methods are devised in order to take advantage of the aberration corrected scanning transmission electron microscope, equipped with a monochromator. This set-up ensures the necessary high spatial and energy resolution for the characterization of the smallest structures. As with these experiments, we aim to obtain chemical and structural information, we use electron energy loss spectroscopy (EELS). The low-loss region of EELS is exploited, which features fundamental electronic properties of semiconductor materials and facilitates a high data throughput. We show how the detailed analysis of these spectra, using theoretical models and computational tools, can enhance the analytical power of EELS. In this sense, initially, results from the model-based fit of the plasmon peak are presented. Moreover, the application of multivariate analysis algorithms to low-loss EELS is explored. Finally, some physical limitations of the technique, such as spatial delocalization, are mentioned. © 2015 The Authors Journal of Microscopy © 2015 Royal Microscopical Society.

3D simulation of electron and ion transmission of GEM-based detectors

NASA Astrophysics Data System (ADS)

Bhattacharya, Purba; Mohanty, Bedangadas; Mukhopadhyay, Supratik; Majumdar, Nayana; da Luz, Hugo Natal

2017-10-01

Time Projection Chamber (TPC) has been chosen as the main tracking system in several high-flux and high repetition rate experiments. These include on-going experiments such as ALICE and future experiments such as PANDA at FAIR and ILC. Different R&D activities were carried out on the adoption of Gas Electron Multiplier (GEM) as the gas amplification stage of the ALICE-TPC upgrade version. The requirement of low ion feedback has been established through these activities. Low ion feedback minimizes distortions due to space charge and maintains the necessary values of detector gain and energy resolution. In the present work, Garfield simulation framework has been used to study the related physical processes occurring within single, triple and quadruple GEM detectors. Ion backflow and electron transmission of quadruple GEMs, made up of foils with different hole pitch under different electromagnetic field configurations (the projected solutions for the ALICE TPC) have been studied. Finally a new triple GEM detector configuration with low ion backflow fraction and good electron transmission properties has been proposed as a simpler GEM-based alternative suitable for TPCs for future collider experiments.