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Sample records for based metal semiconductor

  1. Metal-optic and Plasmonic Semiconductor-based Nanolasers

    NASA Astrophysics Data System (ADS)

    Lakhani, Amit Manmohan

    Over the past few decades, semiconductor lasers have relentlessly followed the path towards miniaturization. Smaller lasers are more energy efficient, are cheaper to make, and open up new applications in sensing and displays, among many other things. Yet, up until recently, there was a fundamental problem with making lasers smaller: purely semiconductor lasers couldn't be made smaller than the diffraction limit of light. In recent years, however, metal-based lasers have been demonstrated in the nanoscale that have shattered the diffraction limit. As optical materials, metals can be used to either reflect light (metal-optics) or convert light to electrical currents (plasmonics). In both cases, metals have provided ways to squeeze light beyond the diffraction limit. In this dissertation, I experimentally demonstrated one nanolaser based on plasmonic transduction and another laser based on metal-optic reflection. To create coherent plasmons, I designed a nanolaser based on a plasmonic bandgap defect state inside a surface plasmonic crystal. In a one-dimensional periodic semiconductor beam, I was able to confine surface plasmons by interrupting the periodicity of the crystal. These confined surface plasmons then underwent laser oscillations in effective mode volumes as small as 0.007 cubic wavelengths. At this electromagnetic volume, energy was squeezed 10 times smaller than those possible in similar photonic crystals that do not utilize metal. This demonstration should pave the way for achieving engineered nanolasers with deep-subwavelength mode volumes and enable plasmonic crystals to become attractive platforms for designing plasmons. After achieving large reductions in electromagnetic mode volumes, I switched to a metal-optics-based nanolaser design to further reduce the physical volumes of small light sources. The semiconductor nanopatch laser achieved laser oscillations with subwavelength-scale physical dimensions (0.019 cubic wavelengths) and effective mode

  2. Optical absorption enhancement of hybrid-plasmonic-based metal-semiconductor-metal photodetector incorporating metal nanogratings and embedded metal nanoparticles.

    PubMed

    Tan, Chee Leong; Karar, Ayman; Alameh, Kamal; Lee, Yong Tak

    2013-01-28

    We propose and numerically demonstrate a high absorption hybrid-plasmonic-based metal semiconductor metal photodetector (MSM-PD) comprising metal nanogratings, a subwavelength slit and amorphous silicon or germanium embedded metal nanoparticles (NPs). Simulation results show that by optimizing the metal nanograting parameters, the subwavelength slit and the embedded metal NPs, a 1.3 order of magnitude increase in electric field is attained, leading to 28-fold absorption enhancement, in comparison with conventional MSM-PD structures. This is 3.5 times better than the absorption of surface plasmon polariton (SPP) based MSM-PD structures employing metal nanogratings and a subwavelength slit. This absorption enhancement is due to the ability of the embedded metal NPs to enhance their optical absorption and scattering properties through light-stimulated resonance aided by the conduction electrons of the NPs.

  3. Nanophotonics Based on Semiconductor-Photonic Crystal/Quantum Dot and Metal-/Semiconductor-Plasmonics

    NASA Astrophysics Data System (ADS)

    Asakawa, Kiyoshi; Sugimoto, Yoshimasa; Ikeda, Naoki; Tsuya, Daiju; Koide, Yasuo; Watanabe, Yoshinori; Ozaki, Nobuhiko; Ohkouchi, Shunsuke; Nomura, Tsuyoshi; Inoue, Daisuke; Matsui, Takayuki; Miura, Atsushi; Fujikawa, Hisayoshi; Sato, Kazuo

    This paper reviews our recent activities on nanophotonics based on a photonic crystal (PC)/quantum dot (QD)-combined structure for an all-optical device and a metal/semiconductor composite structure using surface plasmon (SP) and negative refractive index material (NIM). The former structure contributes to an ultrafast signal processing component by virtue of new PC design and QD selective-area-growth technologies, while the latter provides a new RGB color filter with a high precision and optical beam-steering device with a wide steering angle.

  4. Terahertz Modulator based on Metamaterials integrated with Metal-Semiconductor-Metal Varactors

    PubMed Central

    Nouman, Muhammad Tayyab; Kim, Hyun-Woong; Woo, Jeong Min; Hwang, Ji Hyun; Kim, Dongju; Jang, Jae-Hyung

    2016-01-01

    The terahertz (THz) band of the electromagnetic spectrum, with frequencies ranging from 300 GHz to 3 THz, has attracted wide interest in recent years owing to its potential applications in numerous areas. Significant progress has been made toward the development of devices capable of actively controlling terahertz waves; nonetheless, further advances in device functionality are necessary for employment of these devices in practical terahertz systems. Here, we demonstrate a low voltage, sharp switching terahertz modulator device based on metamaterials integrated with metal semiconductor metal (MSM) varactors, fabricated on an AlGaAs/InGaAs based heterostructure. By varying the applied voltage to the MSM-varactor located at the center of split ring resonator (SRR), the resonance frequency of the SRR-based metamaterial is altered. Upon varying the bias voltage from 0 V to 3 V, the resonance frequency exhibits a transition from 0.52 THz to 0.56 THz, resulting in a modulation depth of 45 percent with an insertion loss of 4.3 dB at 0.58 THz. This work demonstrates a new approach for realizing active terahertz devices with improved functionalities. PMID:27194128

  5. Metal-optic and Plasmonic Semiconductor-based Nanolasers

    DTIC Science & Technology

    2012-05-07

    polaritons (SPPs), however, is less commonly seen. Thus, I will go over basic properties of these SPPs to understand how they might help with nanolaser...Noginov et al. [40]. 2.1.2 Single-Sided Surface Plasmons Besides bulk plasmons, metals can also support surface plasmon polaritons (SPPs). Single-sided...surface plasmon polariton crystal (SPPC or plasmonic crystal). A SPPC is simply a periodic structure on a metal film capable of manipulating surface

  6. Metal Contacts in Semiconductors.

    DTIC Science & Technology

    1983-11-01

    surfaces, Pnotoelectron spe troscopy, Auger electron spectro- I scopy, Schottky barriers, ohmic contacts, Defects in semiconductors, Cadmium * telluride...Indium phosphide, Gallium arsenide, Gallium Selenide . j 20. ABSTR ACT (roothat ow rees esh " neceay and td..ity by block -. b*w) SThe application of...angstroms. Also, provided one eliminates the systems where cadmium outdiffusion into high work function metals occurs then good agreement between the

  7. Flexible perovskite solar cells based on the metal-insulator-semiconductor structure.

    PubMed

    Wei, Jing; Li, Heng; Zhao, Yicheng; Zhou, Wenke; Fu, Rui; Pan, Huiyue; Zhao, Qing

    2016-09-14

    The metal-insulator-semiconductor (MIS) structure is applied to perovskite solar cells, in which the traditional compact layer TiO2 is replaced by Al2O3 as the hole blocking material to realize an all-low-temperature process. Flexible devices based on this structure are also realized with excellent flexibility, which hold 85% of their initial efficiency after bending 100 times.

  8. Metal-semiconductor-metal neutron detectors based on hexagonal boron nitride epitaxial layers

    NASA Astrophysics Data System (ADS)

    Majety, S.; Li, J.; Cao, X. K.; Dahal, R.; Lin, J. Y.; Jiang, H. X.

    2012-10-01

    Hexagonal boron nitride (hBN) possesses extraordinary potential for solid-state neutron detector applications. This stems from the fact that the boron-10 (10B) isotope has a capture cross-section of 3840 barns for thermal neutrons that is orders of magnitude larger than other isotopes. Epitaxial layers of hBN have been synthesized by metal organic chemical vapor deposition (MOCVD). Experimental measurements indicated that the thermal neutron absorption coefficient and length of natural hBN epilayers are about 0.0036 μm-1 and 277 μm, respectively. To partially address the key requirement of long carrier lifetime and diffusion length for a solid-state neutron detector, micro-strip metal-semiconductor-metal detectors were fabricated and tested. A good current response was generated in these detectors using continuous irradiation with a thermal neutron beam, corresponding to an effective conversion efficiency approaching ~80% for absorbed neutrons.

  9. Printable Ultrathin Metal Oxide Semiconductor-Based Conformal Biosensors.

    PubMed

    Rim, You Seung; Bae, Sang-Hoon; Chen, Huajun; Yang, Jonathan L; Kim, Jaemyung; Andrews, Anne M; Weiss, Paul S; Yang, Yang; Tseng, Hsian-Rong

    2015-12-22

    Conformal bioelectronics enable wearable, noninvasive, and health-monitoring platforms. We demonstrate a simple and straightforward method for producing thin, sensitive In2O3-based conformal biosensors based on field-effect transistors using facile solution-based processing. One-step coating via aqueous In2O3 solution resulted in ultrathin (3.5 nm), high-density, uniform films over large areas. Conformal In2O3-based biosensors on ultrathin polyimide films displayed good device performance, low mechanical stress, and highly conformal contact determined using polydimethylsiloxane artificial skin having complex curvilinear surfaces or an artificial eye. Immobilized In2O3 field-effect transistors with self-assembled monolayers of NH2-terminated silanes functioned as pH sensors. Functionalization with glucose oxidase enabled d-glucose detection at physiologically relevant levels. The conformal ultrathin field-effect transistor biosensors developed here offer new opportunities for future wearable human technologies.

  10. Transmission enhancement based on strong interference in metal-semiconductor layered film for energy harvesting.

    PubMed

    Li, Qiang; Du, Kaikai; Mao, Kening; Fang, Xu; Zhao, Ding; Ye, Hui; Qiu, Min

    2016-07-12

    A fundamental strategy to enhance optical transmission through a continuous metallic film based on strong interference dominated by interface phase shift is developed. In a metallic film coated with a thin semiconductor film, both transmission and absorption are simultaneously enhanced as a result of dramatically reduced reflection. For a 50-nm-thick Ag film, experimental transmission enhancement factors of 4.5 and 9.5 are realized by exploiting Ag/Si non-symmetric and Si/Ag/Si symmetric geometries, respectively. These planar layered films for transmission enhancement feature ultrathin thickness, broadband and wide-angle operation, and reduced resistance. Considering one of their potential applications as transparent metal electrodes in solar cells, a calculated 182% enhancement in the total transmission efficiency relative to a single metallic film is expected. This strategy relies on no patterned nanostructures and thereby may power up a wide spectrum of energy-harvesting applications such as thin-film photovoltaics and surface photocatalysis.

  11. Transmission enhancement based on strong interference in metal-semiconductor layered film for energy harvesting

    NASA Astrophysics Data System (ADS)

    Li, Qiang; Du, Kaikai; Mao, Kening; Fang, Xu; Zhao, Ding; Ye, Hui; Qiu, Min

    2016-07-01

    A fundamental strategy to enhance optical transmission through a continuous metallic film based on strong interference dominated by interface phase shift is developed. In a metallic film coated with a thin semiconductor film, both transmission and absorption are simultaneously enhanced as a result of dramatically reduced reflection. For a 50-nm-thick Ag film, experimental transmission enhancement factors of 4.5 and 9.5 are realized by exploiting Ag/Si non-symmetric and Si/Ag/Si symmetric geometries, respectively. These planar layered films for transmission enhancement feature ultrathin thickness, broadband and wide-angle operation, and reduced resistance. Considering one of their potential applications as transparent metal electrodes in solar cells, a calculated 182% enhancement in the total transmission efficiency relative to a single metallic film is expected. This strategy relies on no patterned nanostructures and thereby may power up a wide spectrum of energy-harvesting applications such as thin-film photovoltaics and surface photocatalysis.

  12. Extended-Gate Metal Oxide Semiconductor Field Effect Transistor-Based Biosensor for Detection of Deoxynivalenol

    NASA Astrophysics Data System (ADS)

    Kwon, Insu; Lee, Hee-Ho; Choi, Jinhyeon; Shin, Jang-Kyoo; Seo, Sang-Ho; Choi, Sung-Wook; Chun, Hyang Sook

    2011-06-01

    In this work, we present an extended-gate metal oxide semiconductor field effect transistor (MOSFET)-based biosensor for the detection of deoxynivalenol using a null-balancing circuit. An extended-gate MOSFET-based biosensor was fabricated by a standard complementary metal oxide semiconductor (CMOS) process and its characteristics were measured. A null-balancing circuit was used to measure the output voltage of the sensor directly, instead of measuring the drain current of the sensor. Au was used as the gate metal, which has a chemical affinity with thiol, which leads to the immobilization of a self-assembled monolayer (SAM) of mercaptohexadecanoic acid (MHDA). The SAM was used to immobilize the anti-deoxynivalenol antibody. The carboxyl group of the SAM was bound to the anti-deoxynivalenol antibody. The anti-deoxynivalenol antibody and deoxynivalenol were bound by their antigen-antibody reaction. The measurements were performed in phosphate buffered saline (PBS; pH 7.4) solution. A standard Ag/AgCl electrode was employed as a reference electrode. The bindings of a SAM, anti-deoxynivalenol antibody, and deoxynivalenol caused a variation in the output voltage of the extended-gate MOSFET-based biosensor. Surface plasmon resonance (SPR) measurement was performed to verify the interaction among the SAM, deoxynivalenol-antibody, and deoxynivalenol.

  13. Spatially correlated two-dimensional arrays of semiconductor and metal quantum dots in GaAs-based heterostructures

    SciTech Connect

    Nevedomskiy, V. N. Bert, N. A.; Chaldyshev, V. V.; Preobrazhernskiy, V. V.; Putyato, M. A.; Semyagin, B. R.

    2015-12-15

    A single molecular-beam epitaxy process is used to produce GaAs-based heterostructures containing two-dimensional arrays of InAs semiconductor quantum dots and AsSb metal quantum dots. The twodimensional array of AsSb metal quantum dots is formed by low-temperature epitaxy which provides a large excess of arsenic in the epitaxial GaAs layer. During the growth of subsequent layers at a higher temperature, excess arsenic forms nanoinclusions, i.e., metal quantum dots in the GaAs matrix. The two-dimensional array of such metal quantum dots is created by the δ doping of a low-temperature GaAs layer with antimony which serves as a precursor for the heterogeneous nucleation of metal quantum dots and accumulates in them with the formation of AsSb metal alloy. The two-dimensional array of InAs semiconductor quantum dots is formed via the Stranski–Krastanov mechanism at the GaAs surface. Between the arrays of metal and semiconductor quantum dots, a 3-nm-thick AlAs barrier layer is grown. The total spacing between the arrays of metal and semiconductor quantum dots is 10 nm. Electron microscopy of the structure shows that the arrangement of metal quantum dots and semiconductor quantum dots in the two-dimensional arrays is spatially correlated. The spatial correlation is apparently caused by elastic strain and stress fields produced by both AsSb metal and InAs semiconductor quantum dots in the GaAs matrix.

  14. Metal-Insulator-Semiconductor Photodetectors

    PubMed Central

    Lin, Chu-Hsuan; Liu, Chee Wee

    2010-01-01

    The major radiation of the Sun can be roughly divided into three regions: ultraviolet, visible, and infrared light. Detection in these three regions is important to human beings. The metal-insulator-semiconductor photodetector, with a simpler process than the pn-junction photodetector and a lower dark current than the MSM photodetector, has been developed for light detection in these three regions. Ideal UV photodetectors with high UV-to-visible rejection ratio could be demonstrated with III–V metal-insulator-semiconductor UV photodetectors. The visible-light detection and near-infrared optical communications have been implemented with Si and Ge metal-insulator-semiconductor photodetectors. For mid- and long-wavelength infrared detection, metal-insulator-semiconductor SiGe/Si quantum dot infrared photodetectors have been developed, and the detection spectrum covers atmospheric transmission windows. PMID:22163382

  15. High responsivity A-plane GaN-based metal-semiconductor-metal photodetectors for polarization-sensitive applications

    SciTech Connect

    Navarro, A.; Rivera, C.; Pereiro, J.; Munoz, E.; Imer, B.; DenBaars, S. P.; Speck, J. S.

    2009-05-25

    The fabrication and characterization of metal-semiconductor-metal polarization-sensitive photodetectors based on A-plane GaN grown on R-plane sapphire substrates is reported. These photodetectors take advantage of the in-plane crystal anisotropy, which results in linear dichroism near the band gap energy. The high resistivity of the A-plane GaN material leads to extremely low dark currents. For an optimized finger spacing of 1 {mu}m, dark current density and responsivity at 30 V are 0.3 nA/mm{sup 2} and 2 A/W, respectively. A maximum polarization sensitivity ratio of 1.8 was determined. In a differential configuration, the full width at half maximum of the polarization-sensitive region is 8.5 nm.

  16. A metal-semiconductor-metal detector based on ZnO nanowires grown on a graphene layer

    NASA Astrophysics Data System (ADS)

    Xu, Qiang; Cheng, Qijin; Zhong, Jinxiang; Cai, Weiwei; Zhang, Zifeng; Wu, Zhengyun; Zhang, Fengyan

    2014-02-01

    High quality ZnO nanowires (NWs) were grown on a graphene layer by a hydrothermal method. The ZnO NWs revealed higher uniform surface morphology and better structural properties than ZnO NWs grown on SiO2/Si substrate. A low dark current metal-semiconductor-metal photodetector based on ZnO NWs with Au Schottky contact has also been fabricated. The photodetector displays a low dark current of 1.53 nA at 1 V bias and a large UV-to-visible rejection ratio (up to four orders), which are significantly improved compared to conventional ZnO NW photodetectors. The improvement in UV detection performance is attributed to the existence of a surface plasmon at the interface of the ZnO and the graphene.

  17. A metal-semiconductor-metal detector based on ZnO nanowires grown on a graphene layer.

    PubMed

    Xu, Qiang; Cheng, Qijin; Zhong, Jinxiang; Cai, Weiwei; Zhang, Zifeng; Wu, Zhengyun; Zhang, Fengyan

    2014-02-07

    High quality ZnO nanowires (NWs) were grown on a graphene layer by a hydrothermal method. The ZnO NWs revealed higher uniform surface morphology and better structural properties than ZnO NWs grown on SiO2/Si substrate. A low dark current metal-semiconductor-metal photodetector based on ZnO NWs with Au Schottky contact has also been fabricated. The photodetector displays a low dark current of 1.53 nA at 1 V bias and a large UV-to-visible rejection ratio (up to four orders), which are significantly improved compared to conventional ZnO NW photodetectors. The improvement in UV detection performance is attributed to the existence of a surface plasmon at the interface of the ZnO and the graphene.

  18. The role of the substrate on the dispersion in accumulation in III-V compound semiconductor based metal-oxide-semiconductor gate stacks

    SciTech Connect

    Krylov, Igor; Ritter, Dan; Eizenberg, Moshe

    2015-09-07

    Dispersion in accumulation is a widely observed phenomenon in metal-oxide-semiconductor gate stacks based on III-V compound semiconductors. The physical origin of this phenomenon is attributed to border traps located in the dielectric material adjacent to the semiconductor. Here, we study the role of the semiconductor substrate on the electrical quality of the first layers at atomic layer deposited (ALD) dielectrics. For this purpose, either Al{sub 2}O{sub 3} or HfO{sub 2} dielectrics with variable thicknesses were deposited simultaneously on two technology important semiconductors—InGaAs and InP. Significantly larger dispersion was observed in InP based gate stacks compared to those based on InGaAs. The observed difference is attributed to a higher border trap density in dielectrics deposited on InP compared to those deposited on InGaAs. We therefore conclude that the substrate plays an important role in the determination of the electrical quality of the first dielectric monolayers deposited by ALD. An additional observation is that larger dispersion was obtained in HfO{sub 2} based capacitors compared to Al{sub 2}O{sub 3} based capacitors, deposited on the same semiconductor. This phenomenon is attributed to the lower conduction band offset rather than to a higher border trap density.

  19. TOPICAL REVIEW: Ferromagnetic nitride-based semiconductors doped with transition metals and rare earths

    NASA Astrophysics Data System (ADS)

    Bonanni, A.

    2007-09-01

    This review summarizes the state-of-the-art in the search for room temperature ferromagnetic semiconductors based on transition-metal- and rare-earth-doped nitrides. The major methods of synthesis are reported, together with an overview of the magnetic, structural, electrical and optical characterization of the materials systems, where available. The controversial experimental results concerning the actual value of the apparent Curie temperature in magnetically doped nitrides are highlighted, the inadequacy of standard characterization methods alone and the necessity of a possibly exhaustive structural investigation of the systems are proven and underlined. Furthermore, the dependence on the fabrication parameters of the magnetic ions incorporation into the semiconductor matrix is discussed, with special attention to the fundamental concepts of solubility limit and spinodal decomposition. It is argued that high-temperature ferromagnetic features in magnetically doped nitrides result from the presence of nanoscale regions containing a high concentration of the magnetic constituents. Various functionalities of these multicomponent systems are listed. Moreover, we give an extensive overview on the properties of single magnetic-impurity states in the nitride host. The understanding of this limit is crucial when considering the most recent suggestions for the control of the magnetic ion distribution—and consequently of the magnetic response—through the Fermi level engineering as well as to indicate roads for achieving high-temperature ferromagnetism in the systems containing a uniform distribution of magnetic ions.

  20. A micromachined thermo-optical light modulator based on semiconductor-to-metal phase transition

    NASA Astrophysics Data System (ADS)

    Jiang, Lijun

    In this research, a micromachined thermo-optical light modulator was realized based on the semiconductor-to-metal phase transition of vanadium dioxide (VO2) thin film. VO2 undergoes a reversible phase transition at approximately 68°C, which is accompanied with drastic changes in its electrical and optical properties. The sharp electrical resistivity change can be as great as five orders. Optically, VO2 film will switch from a transparent semiconductor phase to a reflective metal phase upon the phase transition. The light modulator in this research exploits this phase transition related optical switching by using surface micromachined low-thermal-mass pixels to achieve good thermal isolations, which ensures that each pixel can be individually switched without cross talking. In operation, the pixel temperature was controlled by integrated resistor on each pixel or spatially addressed thermal radiation sources. Active VO2 thin film was synthesized by thermal oxidation of e-beam evaporated vanadium metal film. The oxidized film exhibits a phase transition at ˜65°C with a hysteresis of about 15°C. A transmittance switching from ˜90% to ˜30% in the near infrared and a reflectance switching from ˜50% to ˜15% in the visible have been achieved. The surface microstructure was studied and correlated to its optical properties. A study on the hysteresis loop reveals that the VO2 can be repetitively switched between the "on" and "off" states. The micromachined thermal isolation pixel was a bridge-like silicon dioxide platform suspended with narrow supporting legs. The pixel design was optimized with both thermal and optical simulations. The VO2 light modulator was fabricated by surface micromachining based on dry processing. Silicon dioxide was deposited on a polyimide sacrificial layer by PECVD and patterned to form the structural pixel. Vanadium film was e-beam evaporated and patterned with lift-off process. It was thermally oxidized into VO2 at 390°C. The thermal

  1. Semiconductor assisted metal deposition for nanolithography applications

    DOEpatents

    Rajh, Tijana; Meshkov, Natalia; Nedelijkovic, Jovan M.; Skubal, Laura R.; Tiede, David M.; Thurnauer, Marion

    2002-01-01

    An article of manufacture and method of forming nanoparticle sized material components. A semiconductor oxide substrate includes nanoparticles of semiconductor oxide. A modifier is deposited onto the nanoparticles, and a source of metal ions are deposited in association with the semiconductor and the modifier, the modifier enabling electronic hole scavenging and chelation of the metal ions. The metal ions and modifier are illuminated to cause reduction of the metal ions to metal onto the semiconductor nanoparticles.

  2. Semiconductor assisted metal deposition for nanolithography applications

    DOEpatents

    Rajh, Tijana; Meshkov, Natalia; Nedelijkovic, Jovan M.; Skubal, Laura R.; Tiede, David M.; Thurnauer, Marion

    2001-01-01

    An article of manufacture and method of forming nanoparticle sized material components. A semiconductor oxide substrate includes nanoparticles of semiconductor oxide. A modifier is deposited onto the nanoparticles, and a source of metal ions are deposited in association with the semiconductor and the modifier, the modifier enabling electronic hole scavenging and chelation of the metal ions. The metal ions and modifier are illuminated to cause reduction of the metal ions to metal onto the semiconductor nanoparticles.

  3. Metal Contacts on Semiconductors.

    DTIC Science & Technology

    1987-04-01

    alkali metal Na. The transition metals are all highly reactive with clean InP, and give a range of Schottky barriers between ohmic and 0.4 eV. We have...also investigated Schottky barriers for thick films of these metals deposited on clean cleaved (110) InP, surfaces, by I-V and C-V technLqueSg) This...interesting case. When deposited on clean GaAs (110) surfaces it yields a Schottky barrier height comparable with those for metals such as A, Ni, Ap and Au

  4. Metal-oxide-semiconductor based gas sensors: screening, preparation, and integration.

    PubMed

    Zhang, Jian; Qin, Ziyu; Zeng, Dawen; Xie, Changsheng

    2017-03-01

    Metal-oxide-semiconductor (MOS) based gas sensors have been considered a promising candidate for gas detection over the past few years. However, the sensing properties of MOS-based gas sensors also need to be further enhanced to satisfy the higher requirements for specific applications, such as medical diagnosis based on human breath, gas detection in harsh environments, etc. In these fields, excellent selectivity, low power consumption, a fast response/recovery rate, low humidity dependence and a low limit of detection concentration should be fulfilled simultaneously, which pose great challenges to the MOS-based gas sensors. Recently, in order to improve the sensing performances of MOS-based gas sensors, more and more researchers have carried out extensive research from theory to practice. For a similar purpose, on the basis of the whole fabrication process of gas sensors, this review gives a presentation of the important role of screening and the recent developments in high throughput screening. Subsequently, together with the sensing mechanism, the factors influencing the sensing properties of MOSs involved in material preparation processes were also discussed in detail. It was concluded that the sensing properties of MOSs not only depend on the morphological structure (particle size, morphology, pore size, etc.), but also rely on the defect structure and heterointerface structure (grain boundaries, heterointerfaces, defect concentrations, etc.). Therefore, the material-sensor integration was also introduced to maintain the structural stability in the sensor fabrication process, ensuring the sensing stability of MOS-based gas sensors. Finally, the perspectives of the MOS-based gas sensors in the aspects of fundamental research and the improvements in the sensing properties are pointed out.

  5. Experimental characterization of a metal-oxide-semiconductor field-effect transistor-based Coulter counter

    PubMed Central

    Sridhar, Manoj; Xu, Dongyan; Kang, Yuejun; Hmelo, Anthony B.; Feldman, Leonard C.; Li, Dongqing; Li, Deyu

    2008-01-01

    We report the detailed characterization of an ultrasensitive microfluidic device used to detect the translocation of small particles through a sensing microchannel. The device connects a fluidic circuit to the gate of a metal-oxide-semiconductor field-effect transistor (MOSFET) and detects particles by monitoring the MOSFET drain current modulation instead of the modulation in the ionic current through the sensing channel. The minimum volume ratio of the particle to the sensing channel detected is 0.006%, which is about ten times smaller than the lowest detected volume ratio previously reported in the literature. This volume ratio is detected at a noise level of about 0.6% of the baseline MOSFET drain current, clearly showing the amplification effects from the fluidic circuits and the MOSFETs. We characterize the device sensitivity as a function of the MOSFET gate potential and show that its sensitivity is higher when the MOSFET is operating below its threshold gate voltage than when it is operating above the threshold voltage. In addition, we demonstrate that the device sensitivity linearly increases with the applied electrical bias across the fluidic circuit. Finally, we show that polystyrene beads and glass beads with similar sizes can be distinguished from each other based on their different translocation times, and the size distribution of microbeads can be obtained with accuracy comparable to that of direct scanning electron microscopy measurements. PMID:19479001

  6. Photocapacitive light sensor based on metal-YMnO3-insulator-semiconductor structures

    NASA Astrophysics Data System (ADS)

    Bogusz, A.; Choudhary, O. S.; Skorupa, I.; Bürger, D.; Lawerenz, A.; Lei, Y.; Zeng, H.; Abendroth, B.; Stöcker, H.; Schmidt, O. G.; Schmidt, H.

    2016-02-01

    Technology of light sensors, due to the wide range of applications, is a dynamically developing branch of both science and industry. This work presents concept of photodetectors based on a metal-ferroelectric-insulator-semiconductor, a structure which has not been thoroughly explored in the field of photodetectors. Functionality of the presented light sensor exploits the effects of photocapacitive phenomena, ferroelectric polarization, and charge trapping. This is accomplished by an interplay between polarization alignment, subsequent charge distribution, and charge trapping processes under given illumination condition and gate voltage. Change of capacitance serves as a read out parameter indicating the wavelength and intensity of the illuminating light. The operational principle of the proposed photocapacitive light sensor is demonstrated in terms of capacitance-voltage and capacitance-time characteristics of an Al/YMnO3/SiNx/p-Si structure exposed to green, red, and near infrared light. Obtained results are discussed in terms of optical properties of YMnO3 and SiNx layers contributing to the performance of photodetectors. Presented concept of light sensing might serve as the basis for the development of more advanced photodetectors.

  7. Silicon-on-insulator-based complementary metal oxide semiconductor integrated optoelectronic platform for biomedical applications

    NASA Astrophysics Data System (ADS)

    Mujeeb-U-Rahman, Muhammad; Scherer, Axel

    2016-12-01

    Microscale optical devices enabled by wireless power harvesting and telemetry facilitate manipulation and testing of localized biological environments (e.g., neural recording and stimulation, targeted delivery to cancer cells). Design of integrated microsystems utilizing optical power harvesting and telemetry will enable complex in vivo applications like actuating a single nerve, without the difficult requirement of extreme optical focusing or use of nanoparticles. Silicon-on-insulator (SOI)-based platforms provide a very powerful architecture for such miniaturized platforms as these can be used to fabricate both optoelectronic and microelectronic devices on the same substrate. Near-infrared biomedical optics can be effectively utilized for optical power harvesting to generate optimal results compared with other methods (e.g., RF and acoustic) at submillimeter size scales intended for such designs. We present design and integration techniques of optical power harvesting structures with complementary metal oxide semiconductor platforms using SOI technologies along with monolithically integrated electronics. Such platforms can become the basis of optoelectronic biomedical systems including implants and lab-on-chip systems.

  8. Unusual electronic transport and magnetism in titanium oxide based semiconductors and metals

    NASA Astrophysics Data System (ADS)

    Zhang, Shixiong

    The main objective of this thesis was to explore the structural, electrical, magnetic and optical properties of titanium based novel oxide thin films, such as transparent conducting oxides (TCOs) and diluted magnetic semiconductors (DMSs), so as to be able to realize optoelectronics and spintronics applications. I demonstrated that niobium doped titanium dioxide (TiO2) in its epitaxial anatase phase grown at certain condition is an intrinsic transparent conducting oxide, with both its conductivity and transparency comparable to that of the commercial transparent electrode In-Sn-O being widely used in current optoelectronic devices. I investigated the growth parameter dependence of structure and conductivity of this material. It was found that the growth temperature is a crucial parameter for the structural quality as well as the electron mobility, while the oxygen partial pressure is essential for the conduction electron concentration. The excellent conductivity of niobium doped TiO2 should be attributed to the extremely high solubility of niobium in the TiO2 matrix as well as a very shallow donor level created in the TiO2 band gap. I investigated several important oxide based DMS systems, such as niobium and cobalt dual doped TiO2, transition metal (TM) element doped SrTiO3 etc. I found that niobium dual doping is an effective way to introduce carriers into the classical Co: TiO2 system, which provides the feasibility of studying the RKKY interaction in this system by chemical doping. Our detailed characterization of TM doped SrTiO3 questioned the intrinsic nature of the ferromagnetism observed by other groups. By a systematic study of Hall effect on superparamagnetic Co-(La,Sr)TiO 3 thin films, I was able to demonstrate that the magnitude of the anomalous Hall effect is a way to distinguish between intrinsic and extrinsic DMS. A Kondo effect was observed in niobium doped TiO2 grown at certain condition. The origin of magnetic moments in this system was suggested

  9. Circular Metal/Semiconductor/Metal Photodetectors

    NASA Technical Reports Server (NTRS)

    Mcadoo, James A.; Towe, Elias; Bishop, William L.; Wang, Liang-Guo

    1995-01-01

    Metal/semiconductor/metal (MSM) photodetectors with multiple concentric circular electrodes developed. Some electrical characteristics expected superior to those of older MSM photodetectors containing interdigitated straight electrodes. Response times smaller and shorter, and breakdown voltages larger. Decrease in capacitance allows greater signal-detection bandwidth. Important advantage in fiber-optic telecommunication systems, in which photodectors central components in receiver circuits. Increasing bandwidth of such photodetector enables receiver to handle larger number of channels or increased information rate in each channel.

  10. Optical waveguide beam splitters based on hybrid metal-dielectric-semiconductor nanostructures

    NASA Astrophysics Data System (ADS)

    Li, Yunyun; Liang, Junwu; Zhang, Qinglin; Zhou, Zidong; Li, Honglai; Fan, Xiaopeng; Wang, Xiaoxia; Fan, Peng; Yang, Yankun; Guo, Pengfei; Zhuang, Xiujuan; Zhu, Xiaoli; Liao, Lei; Pan, Anlian

    2015-11-01

    Miniature integration is desirable for the future photonics circuit. Low-dimensional semiconductor and metal nanostructures is the potential building blocks in compact photonic circuits for their unique electronic and optical properties. In this work, a hybrid metal-dielectric-semiconductor nanostructure is designed and fabricated to realizing a nano-scale optical waveguide beam splitter, which is constructed with the sandwiched structure of a single CdS nanoribbon/HfO2 thin film/Au nanodisk arrays. Micro-optical investigations reveal that the guided light outputting at the terminal end of the CdS ribbon is well separated into several light spots. Numerical simulations further demonstrate that the beam splitting mechanism is attributed to the strong electromagnetic coupling between the Au nanodisks and light guided in the nanoribbon. The number of the split beams (light spots) at the terminal end of the nanoribbon is mainly determined by the number of the Au nanodisk rows, as well as the distance of the blank region between the nanodisks array and the end of the CdS ribbon, owing to the interference between the split beams. These optical beam splitters may find potential applications in high-density integrated photonic circuits and systems.

  11. Monolithic integration of GaN-based light-emitting diodes and metal-oxide-semiconductor field-effect transistors.

    PubMed

    Lee, Ya-Ju; Yang, Zu-Po; Chen, Pin-Guang; Hsieh, Yung-An; Yao, Yung-Chi; Liao, Ming-Han; Lee, Min-Hung; Wang, Mei-Tan; Hwang, Jung-Min

    2014-10-20

    In this study, we report a novel monolithically integrated GaN-based light-emitting diode (LED) with metal-oxide-semiconductor field-effect transistor (MOSFET). Without additionally introducing complicated epitaxial structures for transistors, the MOSFET is directly fabricated on the exposed n-type GaN layer of the LED after dry etching, and serially connected to the LED through standard semiconductor-manufacturing technologies. Such monolithically integrated LED/MOSFET device is able to circumvent undesirable issues that might be faced by other kinds of integration schemes by growing a transistor on an LED or vice versa. For the performances of resulting device, our monolithically integrated LED/MOSFET device exhibits good characteristics in the modulation of gate voltage and good capability of driving injected current, which are essential for the important applications such as smart lighting, interconnection, and optical communication.

  12. First principles study of Fe in diamond: A diamond-based half metallic dilute magnetic semiconductor

    SciTech Connect

    Benecha, E. M.; Lombardi, E. B.

    2013-12-14

    Half-metallic ferromagnetic ordering in semiconductors, essential in the emerging field of spintronics for injection and transport of highly spin polarised currents, has up to now been considered mainly in III–V and II–VI materials. However, low Curie temperatures have limited implementation in room temperature device applications. We report ab initio Density Functional Theory calculations on the properties of Fe in diamond, considering the effects of lattice site, charge state, and Fermi level position. We show that the lattice sites and induced magnetic moments of Fe in diamond depend strongly on the Fermi level position and type of diamond co-doping, with Fe being energetically most favorable at the substitutional site in p-type and intrinsic diamond, while it is most stable at a divacancy site in n-type diamond. Fe induces spin polarized bands in the band gap, with strong hybridization between Fe-3d and C-2s,2p bands. We further consider Fe-Fe spin interactions in diamond and show that substitutional Fe{sup +1} in p-type diamond exhibits a half-metallic character, with a magnetic moment of 1.0 μ{sub B} per Fe atom and a large ferromagnetic stabilization energy of 33 meV, an order of magnitude larger than in other semiconductors, with correspondingly high Curie temperatures. These results, combined with diamond's unique properties, demonstrate that Fe doped p-type diamond is likely to be a highly suitable candidate material for spintronics applications.

  13. Search for effective spin injection heterostructures based on half-metal Heusler alloys/gallium arsenide semiconductors: A theoretical investigation

    NASA Astrophysics Data System (ADS)

    Sivakumar, Chockalingam

    Efficient electrical spin injection from half-metal (HM) electrodes into semiconducting (SC) channel material is a desirable aspect in spintronics, but a challenging one. Half-metals based on the Heusler alloy family are promising candidates as spin sources due to their compatibility with compound SCs, and very high Curie temperatures. Numerous efforts were made in the past two decades to grow atomically abrupt interfaces between HM_Heusler and SC heterostructures. However, diffusion of magnetic impurities into the semiconductor, defects and disorder near the interface, and formation of reacted phases were great challenges. A number of theoretical efforts were undertaken to understand the role of such material defects in destroying the half-metallicity and also to propose promising half-metal/SC heterostructures based on first principles. This dissertation summarizes the investigations undertaken to decode the complexity of, and to understand the various physical properties of, a number of real-world Heusler/SC heterostructure samples, based on the ab initio density functional theory (DFT) approach. In addition, it summarizes various results from the first principles-based search for promising half-metal/SC heterostructures. First, I present results from DFT-based predictive models of actual Co 2MnSi (CMS)/GaAs heterostructures grown in (001) texture. I investigate the physical, chemical, electronic, and magnetic properties to understand the complexity of these structures and to pinpoint the origin of interfacial effects, when present. Based on the investigations of such models, I discuss the utility of those actual samples in spintronic applications. Next, I summarise the results from an ab initio DFT-based survey of 6 half-Heusler half-metal/GaAs heterostructure models in (110) texture, since compound semiconductors such as GaAs have very long spin lifetime in (110) layering. I show 3 half-Heusler alloys (CoVAs, NiMnAs, and RhFeGe), that when interfaced with Ga

  14. Noble metal-free hydrogen-evolving photocathodes based on small molecule organic semiconductors

    NASA Astrophysics Data System (ADS)

    Morozan, A.; Bourgeteau, T.; Tondelier, D.; Geffroy, B.; Jousselme, B.; Artero, V.

    2016-09-01

    Organic semiconductors have great potential for producing hydrogen in a sustainable and economically-viable manner because they rely on readily available materials with highly tunable properties. We demonstrate here the relevance of heterojunctions to the construction of H2-evolving photocathodes, exclusively based on earth-abundant elements. Boron subnaphthalocyanine chloride proved a very promising acceptor in that perspective. It absorbs a part of the solar spectrum complementary to α-sexithiophene as a donor, thus generating large photocurrents and providing a record onset potential for light-driven H2 evolution under acidic aqueous conditions using a nanoparticulate amorphous molybdenum sulfide catalyst.

  15. Analysis of Interface Charge Densities for High-k Dielectric Materials based Metal Oxide Semiconductor Devices

    NASA Astrophysics Data System (ADS)

    Maity, N. P.; Thakur, R. R.; Maity, Reshmi; Thapa, R. K.; Baishya, S.

    2016-10-01

    In this paper, the interface charge densities (Dit) are studied and analyzed for ultra thin dielectric metal oxide semiconductor (MOS) devices using different high-k dielectric materials such as Al2O3, ZrO2 and HfO2. The Dit have been calculated by a new approach using conductance method and it indicates that by reducing the thickness of the oxide, the Dit increases and similar increase is also found by replacing SiO2 with high-k. For the same oxide thickness, SiO2 has the lowest Dit and found to be the order of 1011cm-2eV-1. Linear increase in Dit has been observed as the dielectric constant of the oxide increases. The Dit is found to be in good agreement with published fabrication results at p-type doping level of 1×1017cm-3. Numerical calculations and solutions are performed by MATLAB and device simulation is done by ATLAS.

  16. Low dark current metal-semiconductor-metal ultraviolet photodetectors based on sol-gel-derived TiO2 films

    NASA Astrophysics Data System (ADS)

    Xie, Yannan; Huang, Huolin; Yang, Weifeng; Wu, Zhengyun

    2011-01-01

    The titanium dioxide (TiO2) films prepared by sol-gel processing were used to fabricate metal-semiconductor-metal ultraviolet photodetectors. A very low dark current of 5.38 pA (current density of 3.84 nA/cm2) at 5 V bias is obtained, which is ascribed to the high effective Schottky barrier between Au and TiO2 films. The x-ray photoelectron spectroscopy analysis demonstrates that the concentration of oxygen vacancies is very low in the surface of the TiO2 films, which is responsible for the high effective Schottky barrier. The devices exhibit a cutoff wavelength at about 380 nm and a large UV-to-visible rejection ratio (340 versus 400 nm) of three orders of magnitude. The peak responsivity of the devices is 17.5 A/W at 5 V bias, indicating the presence of internal photoconductive gain induced by desorption of oxygen on the TiO2 surface.

  17. Nonvolatile Memory Effect in Indium Gallium Arsenide-Based Metal-Oxide-Semiconductor Devices Using II-VI Tunnel Insulators

    NASA Astrophysics Data System (ADS)

    Chan, P.-Y.; Gogna, M.; Suarez, E.; Karmakar, S.; Al-Amoody, F.; Miller, B. I.; Jain, F. C.

    2011-08-01

    This paper reports the successful use of ZnSe/ZnS/ZnMgS/ZnS/ZnSe as a gate insulator stack for an InGaAs-based metal-oxide-semiconductor (MOS) device, and demonstrates the threshold voltage shift required in nonvolatile memory devices using a floating gate quantum dot layer. An InGaAs-based nonvolatile memory MOS device was fabricated using a high- κ II-VI tunnel insulator stack and self-assembled GeO x -cladded Ge quantum dots as the charge storage units. A Si3N4 layer was used as the control gate insulator. Capacitance-voltage data showed that, after applying a positive voltage to the gate of a MOS device, charges were being stored in the quantum dots. This was shown by the shift in the flat-band/threshold voltage, simulating the write process of a nonvolatile memory device.

  18. Optical Spectroscopy of Hybrid Semiconductor Quantum Dots and Metal Nanoparticles

    DTIC Science & Technology

    2014-11-07

    SECURITY CLASSIFICATION OF: Optical studies of semiconductor quantum dots (SQDs), metal nanoparticles (MNPs), and their hybrid nanomaterials are...Distribution Unlimited Final Report: Optical Spectroscopy of Hybrid Semiconductor Quantum Dots and Metal Nanoparticles The views, opinions and/or findings...Semiconductor Quantum Dots and Metal Nanoparticles Report Title Optical studies of semiconductor quantum dots (SQDs), metal nanoparticles (MNPs), and their

  19. Half-metallic diluted antiferromagnetic semiconductors.

    PubMed

    Akai, H; Ogura, M

    2006-07-14

    The possibility of half-metallic antiferromagnetism, a special case of ferrimagnetism with a compensated magnetization, in the diluted magnetic semiconductors is highlighted on the basis of the first-principles electronic structure calculation. As typical examples, the electrical and magnetic properties of II-VI compound semiconductors doped with 3d transition metal ion pairs--(V, Co) and (Fe, Cr)--are discussed.

  20. Performance improvement of GaN-based metal-semiconductor-metal photodiodes grown on Si(111) substrate by thermal cycle annealing process

    NASA Astrophysics Data System (ADS)

    Lin, Jyun-Hao; Huang, Shyh-Jer; Su, Yan-Kuin

    2014-01-01

    A simple thermal cycle annealing (TCA) process was used to improve the quality of GaN grown on a Si substrate. The X-ray diffraction (XRD) and etch pit density (EPD) results revealed that using more process cycles, the defect density cannot be further reduced. However, the performance of GaN-based metal-semiconductor-metal (MSM) photodiodes (PDs) prepared on Si substrates showed significant improvement. With a two-cycle TCA process, it is found that the dark current of the device was only 1.46 × 10-11 A, and the photo-to-dark-current contrast ratio was about 1.33 × 105 at 5 V. Also, the UV/visible rejection ratios can reach as high as 1077.

  1. High Speed Heterostructure Metal-Semiconductor-Metal Photodetectors

    NASA Astrophysics Data System (ADS)

    Cola, A.; Nabet, B.; Chen, X.; Quaranta, F.

    2005-01-01

    In this work we review the properties of a class of metal-semiconductor-metal photodetectors based on heterojunction structures. Particularly, an AlGaAs/GaAs device is detailed in which the absorption region is in the GaAs layer, and a two-dimensional electron gas is formed at the heterointerface due toδ-doping of the widegap material. This heterostructure metal-semiconductor-metal photodetector also contains an AlGaAs distributed Bragg reflector that forms a resonant cavity for detection at 850 nm. The beneficial effect of the two-dimensional electron gas in the GaAs absorption layer in terms of speed and sensitivity is demonstrated by comparing samples with and without doping in the AlGaAs layer. The design and the physical properties of the grown epitaxial structure are presented, together with the static and dynamic characteristics of the device in time domain. In particular, photocurrent spectra exhibit a 30 nm wide peak at 850 nm, and time response measurements give a bandwidth over 30 GHz. A combination of very low dark current and capacitance, fast response, wavelength selectivity, and compatibility with high electron mobility transistors makes this device suitable for a number of application areas, such as Gigabit and 10 Gigabit Ethernet, wavelength division multiplexing, remote sensing, and medical applications.

  2. Stimuli responsive release of metalic nanoparticles on semiconductor substrates.

    PubMed

    Santiago-Cordoba, Miguel; Topal, Özge; Allara, David L; Kalkan, A Kaan; Demirel, Melik C

    2012-04-10

    Optically active metal nanoparticles have been of recent and broad interest for applications to biomarker detection because of their ability to enable high sensitivity enhancements in various optical detection techniques. Here, we report stimuli responsive release of metallic nanoparticles on a semiconductor thin film array structure based on pH change. The metallic nanoparticles are obtained by a simple redox procedure on the semiconductor surface. This approach allows controlling nanoparticle surface coatings in situ for biomolecule conjugation, such as DNA probes on nanoparticles, and rapid stimuli responsive release of these nanoparticles upon pH change.

  3. CdSe Nanowire-Based Flexible Devices: Schottky Diodes, Metal-Semiconductor Field-Effect Transistors, and Inverters.

    PubMed

    Jin, Weifeng; Zhang, Kun; Gao, Zhiwei; Li, Yanping; Yao, Li; Wang, Yilun; Dai, Lun

    2015-06-24

    Novel CdSe nanowire (NW)-based flexible devices, including Schottky diodes, metal-semiconductor field-effect transistors (MESFETs), and inverters, have been fabricated and investigated. The turn-on voltage of a typical Schottky diode is about 0.7 V, and the rectification ratio is larger than 1 × 10(7). The threshold voltage, on/off current ratio, subthreshold swing, and peak transconductance of a typical MESFET are about -0.3 V, 4 × 10(5), 78 mV/dec, and 2.7 μS, respectively. The inverter, constructed with two MESFETs, exhibits clear inverting behavior with the gain to be about 28, 34, and 38, at the supply voltages (V(DD)) of 3, 5, and 7 V, respectively. The inverter also shows good dynamic behavior. The rising and falling times of the output signals are about 0.18 and 0.09 ms, respectively, under 1000 Hz square wave signals input. The performances of the flexible devices are stable and reliable under different bending conditions. Our work demonstrates these flexible NW-based Schottky diodes, MESFETs, and inverters are promising candidate components for future portable transparent nanoelectronic devices.

  4. A Three-Stage Inverter-Based Stacked Power Amplifier in 65 nm Complementary Metal Oxide Semiconductor Process

    NASA Astrophysics Data System (ADS)

    Kiumarsi, Hamid; Mizuochi, Yutaka; Ito, Hiroyuki; Ishihara, Noboru; Masu, Kazuya

    2012-02-01

    A three-stage inverter-based stacked power amplifier (PA) in complementary metal oxide semiconductor (CMOS) process is proposed to overcome low breakdown voltage problem of scaled CMOS technologies. Unlike previous reported stacked PAs which radio frequency choke (RFC) was inevitable, we proposed stacked nMOS and pMOS transistors which effectively eliminates use of RFC. By properly setting self-biased circuits' and transistors' parameters, output impedance could reach up to 50 Ω which together with not employing the RFC makes this topology very appealing for the scalable PA realization. As a proof of concept, a three-stage PA using 65 nm CMOS technology is implemented. With a 6 V power supply for the third stage, the fabricated PA shows a small-signal gain of 36 dB, a saturated output power of 16 dBm and a maximum power added efficiency of 10% at 1 GHz. Using a 7.5 V of power supply, saturated output power reaches 18 dBm. To the best of our knowledge, this is the first reported inverter-based stacked PA.

  5. Optical Properties of Planar Nanostructures Based on Semiconductor Quantum Dots and Plasmonic Metal Nanoparticles

    NASA Astrophysics Data System (ADS)

    Bakanov, A. G.; Toropov, N. A.; Vartanyan, T. A.

    2016-03-01

    The optical properties of a composite material consisting of a thin polymer film, which is activated by semiconductor CdSe/ZnS quantum dots (QDs) and silver nanoparticles, on a transparent dielectric substrate have been investigated. It is revealed that the presence of silver nanoparticles leads to an increase in the QD absorption (by a factor of 4) and in the fluorescence intensity (by a factor of 10), whereas the fluorescence time drops by a factor of about 10. Excitation of the composite medium by a pulsed laser is found to result in narrowing of the fluorescence band and a sublinear dependence of its intensity on the pulse energy. In the absence of silver nanoparticles, the fluorescence spectrum of QDs is independent of the excitation-pulse energy density, and the fluorescence intensity depends linearly on the pulse energy in the entire range of energy densities, up to 75 mJ/cm2.

  6. Metal insulator semiconductor solar cell devices based on a Cu{sub 2}O substrate utilizing h-BN as an insulating and passivating layer

    SciTech Connect

    Ergen, Onur; Gibb, Ashley; Vazquez-Mena, Oscar; Zettl, Alex; Regan, William Raymond

    2015-03-09

    We demonstrate cuprous oxide (Cu{sub 2}O) based metal insulator semiconductor Schottky (MIS-Schottky) solar cells with efficiency exceeding 3%. A unique direct growth technique is employed in the fabrication, and hexagonal boron nitride (h-BN) serves simultaneously as a passivation and insulation layer on the active Cu{sub 2}O layer. The devices are the most efficient of any Cu{sub 2}O based MIS-Schottky solar cells reported to date.

  7. Circular electrode geometry metal-semiconductor-metal photodetectors

    NASA Technical Reports Server (NTRS)

    Mcadoo, James A. (Inventor); Towe, Elias (Inventor); Bishop, William L. (Inventor); Wang, Liang-Guo (Inventor)

    1995-01-01

    The invention comprises a high speed, metal-semiconductor-metal photodetector which comprises a pair of generally circular, electrically conductive electrodes formed on an optically active semiconductor layer. Various embodiments of the invention include a spiral, intercoiled electrode geometry and an electrode geometry comprised of substantially circular, concentric electrodes which are interposed. These electrode geometries result in photodetectors with lower capacitances, dark currents and lower inductance which reduces the ringing seen in the optical pulse response.

  8. Circular electrode geometry metal-semiconductor-metal photodetectors

    NASA Technical Reports Server (NTRS)

    Mcaddo, James A. (Inventor); Towe, Elias (Inventor); Bishop, William L. (Inventor); Wang, Liang-Guo (Inventor)

    1994-01-01

    The invention comprises a high speed, metal-semiconductor-metal photodetector which comprises a pair of generally circular, electrically conductive electrodes formed on an optically active semiconductor layer. Various embodiments of the invention include a spiral, intercoiled electrode geometry and an electrode geometry comprised of substantially circular, concentric electrodes which are interposed. These electrode geometries result in photodetectors with lower capacitances, dark currents and lower inductance which reduces the ringing seen in the optical pulse response.

  9. Steady-state characteristics and transient response of MgZnO-based metal-semiconductor-metal solar-blind ultraviolet photodetector with three types of electrode structures.

    PubMed

    Wang, Ping; Zhen, Qinghong; Tang, Qing; Yang, Yintang; Guo, Lixin; Ding, Kai; Huang, Feng

    2013-07-29

    Detailed studies of MgZnO-based metal-semiconductor-metal (MSM) solar-blind ultraviolet photodetector with different electrode structures are performed. A two-dimensional physical model is established based on the Poisson's equation and time-dependent continuity equations, which is verified by our experimental data of conventional electrode MSM detector. The steady-state characteristics and transient response of semicircular and triangular electrode MSM detectors are also investigated by this model. Compared with the conventional electrode, semicircular and triangular electrode devices exhibit a substantial improvement on the photocurrent. At a bias of 10 V, the steady-state saturated photocurrents for semicircular and triangular electrode devices are 14.69 nA and 24.37 nA respectively, corresponding to a 20.5% and 100% increase over the conventional electrode detector. Meanwhile, the transient peak photocurrents reach 31.38 nA and 52.09 nA respectively, both of which are notably larger than that of conventional device.

  10. Recent progress on ZnO-based metal-semiconductor field-effect transistors and their application in transparent integrated circuits.

    PubMed

    Frenzel, Heiko; Lajn, Alexander; von Wenckstern, Holger; Lorenz, Michael; Schein, Friedrich; Zhang, Zhipeng; Grundmann, Marius

    2010-12-14

    Metal-semiconductor field-effect transistors (MESFETs) are widely known from opaque high-speed GaAs or high-power SiC and GaN technology. For the emerging field of transparent electronics, only metal-insulator-semiconductor field-effect transistors (MISFETs) were considered so far. This article reviews the progress of high-performance MESFETs in oxide electronics and reflects the recent advances of this technique towards transparent MESFET circuitry. We discuss design prospects as well as limitations regarding device performance, reliability and stability. The presented ZnO-based MESFETs and inverters have superior properties compared to MISFETs, i.e., high channel mobilities and on/off-ratios, high gain, and low uncertainty level at comparatively low operating voltages. This makes them a promising approach for future low-cost transparent electronics.

  11. Multilevel metallization method for fabricating a metal oxide semiconductor device

    NASA Technical Reports Server (NTRS)

    Hollis, B. R., Jr.; Feltner, W. R.; Bouldin, D. L.; Routh, D. E. (Inventor)

    1978-01-01

    An improved method is described of constructing a metal oxide semiconductor device having multiple layers of metal deposited by dc magnetron sputtering at low dc voltages and low substrate temperatures. The method provides multilevel interconnections and cross over between individual circuit elements in integrated circuits without significantly reducing the reliability or seriously affecting the yield.

  12. Controlling the interface charge density in GaN-based metal-oxide-semiconductor heterostructures by plasma oxidation of metal layers

    SciTech Connect

    Hahn, Herwig Kalisch, Holger; Vescan, Andrei; Pécz, Béla; Kovács, András; Heuken, Michael

    2015-06-07

    In recent years, investigating and engineering the oxide-semiconductor interface in GaN-based devices has come into focus. This has been driven by a large effort to increase the gate robustness and to obtain enhancement mode transistors. Since it has been shown that deep interface states act as fixed interface charge in the typical transistor operating regime, it appears desirable to intentionally incorporate negative interface charge, and thus, to allow for a positive shift in threshold voltage of transistors to realise enhancement mode behaviour. A rather new approach to obtain such negative charge is the plasma-oxidation of thin metal layers. In this study, we present transmission electron microscopy and energy dispersive X-ray spectroscopy analysis as well as electrical data for Al-, Ti-, and Zr-based thin oxide films on a GaN-based heterostructure. It is shown that the plasma-oxidised layers have a polycrystalline morphology. An interfacial amorphous oxide layer is only detectable in the case of Zr. In addition, all films exhibit net negative charge with varying densities. The Zr layer is providing a negative interface charge density of more than 1 × 10{sup 13 }cm{sup –2} allowing to considerably shift the threshold voltage to more positive values.

  13. Model of coherent transport in metal-insulator-midband gap semiconductor-insulator-semiconductor structure

    NASA Astrophysics Data System (ADS)

    Abramov, I. I.; Danilyuk, A. L.

    1997-08-01

    A kinetic model of coherent transport with self-organized carrier transfer via midband gap semiconductor states in metal-insulator-midband gap semiconductor-insulator-semiconductor structure at room temperature is proposed. The coherent transport at room temperature can be a result of continuous oscillations of charge carriers at midband gap semiconductor states.

  14. CMOS array design automation techniques. [metal oxide semiconductors

    NASA Technical Reports Server (NTRS)

    Ramondetta, P.; Feller, A.; Noto, R.; Lombardi, T.

    1975-01-01

    A low cost, quick turnaround technique for generating custom metal oxide semiconductor arrays using the standard cell approach was developed, implemented, tested and validated. Basic cell design topology and guidelines are defined based on an extensive analysis that includes circuit, layout, process, array topology and required performance considerations particularly high circuit speed.

  15. Silicon Metal-Oxide-Semiconductor Quantum Devices

    NASA Astrophysics Data System (ADS)

    Nordberg, Eric

    This thesis presents stable quantum dots in a double gated silicon metal-oxide-semiconductor (MOS) system with an open-lateral geometry. In recent years, semiconductor lateral quantum dots have emerged as an appealing approach to quantum computing. Silicon offers the potential for very long electron spin decoherence times in these dots. Several important steps toward a functioning silicon-based electron spin qubit are presented, including stable Coulomb blockade within a quantum dot, a tunable double quantum dot, and integrated charge sensing. A fabrication process has been created to make low-disorder constrictions on relatively high mobility Si-MOS material and to facilitate essentially arbitrary gate geometries. Within this process, changes in mobility and charge defect densities are measured for critical process steps. This data was used to guide the fabrication of devices culminating, in this work, with a clean, stable quantum dot in a double-gated MOS system. Stable Coulomb-blockade behavior showing single-period conductance oscillations was observed in MOS quantum dots. Measured capacitances within each device and capacitances calculated via modeling are compared, showing that the measured Coulomb-blockade is consistent with a lithographically defined quantum dot, as opposed to a disorder dot within a single constriction. A tunable double dot is also observed. Laterally coupled charge sensing of quantum dots is highly desirable because it enables measurement even when conduction through the quantum dot itself is suppressed. Such charge sensing is demonstrated in this system. The current through a point contact constriction located near a quantum dot shows sharp 2% changes corresponding to charge transitions between the dot and a nearby lead. The coupling capacitance between the charge sensor and the quantum dot is extracted and agrees well with a capacitance model of the integrated sensor and quantum dot system.

  16. Theoretical Study of the Noble Metals on Semiconductor Surfaces and Titanium-Base Shape Memory Alloys

    NASA Astrophysics Data System (ADS)

    Ding, Yungui

    The electronic and structural properties of the (sqrt3 x sqrt3) R30^circ Ag/Si(111) and ( sqrt3 x sqrt3) R30^ circ Au/Si(111) surfaces are investigated using first principles total energy calculations. We have tested almost all experimentally proposed structural models for both surfaces and found the energetically most favorable model for each of them. The lowest energy model structure of the (sqrt3 x sqrt3) R30^circ Ag/Si(111) surface consists of a top layer of Ag atoms arranged as "honeycomb -chained-trimers" lying above a distorted "missing top layer" Si(111) substrate. The coverage of Ag is 1 monolayer (ML). We find that the honeycomb structure observed in STM images arise from the electronic charge densities of an empty surface band near the Fermi level. The electronic density of states of this model gives a "pseudo-gap" around the Fermi level, which is consistent with experimental results. The lowest energy model for the (sqrt3 x sqrt3) R30^circ Au/Si(111) surface is a conjugate honeycomb-chained-trimer (CHCT-1) configuration which consists of a top layer of trimers formed by 1 ML Au atoms lying above a "missing top layer" Si(111) substrate with a honeycomb-chained-trimer structure for its first layer. The structures of Au and Ag are in fact quite similar and belong to the same class of structural models. However, small variation in the structural details gives rise to quite different observed STM images, as revealed in the theoretical calculations. The electronic charge density from bands around the Fermi level for the (sqrt3 x sqrt3) R30^circ Au/Si(111) surface also gives a good description of the images observed in STM experiments. First principles calculations are performed to study the electronic and structural properties of a series of Ti-base binary alloys TiFe, TiNi, TiPd, TiMo, and TiAu in the B2 structure. Calculations are also done for Ti in bcc structure and hypothetical B2-structured TiAl, TiAg, and TiCu. Our results show correlation between the

  17. Fermi level dependent native defect formation: Consequences for metal-semiconductor and semiconductor-semiconductor interfaces

    SciTech Connect

    Walukiewicz, W.

    1988-02-01

    The amphoteric native defect model of the Schottky barrier formation is used to analyze the Fermi level pinning at metal/semiconductor interfaces for submonolayer metal coverages. It is assumed that the energy required for defect generation is released in the process of surface back-relaxation. Model calculations for metal/GaAs interfaces show a weak dependence of the Fermi level pinning on the thickness of metal deposited at room temperature. This weak dependence indicates a strong dependence of the defect formation energy on the Fermi level, a unique feature of amphoteric native defects. This result is in very good agreement with experimental data. It is shown that a very distinct asymmetry in the Fermi level pinning on p- and n-type GaAs observed at liquid nitrogen temperatures can be understood in terms of much different recombination rates for amphoteric native defects in those two types of materials. Also, it is demonstrated that the Fermi level stabilization energy, a central concept of the amphoteric defect system, plays a fundamental role in other phenomena in semiconductors such as semiconductor/semiconductor heterointerface intermixing and saturation of free carrier concentration. 33 refs., 6 figs.

  18. Responsivity drop due to conductance modulation in GaN metal-semiconductor-metal Schottky based UV photodetectors on Si(111)

    NASA Astrophysics Data System (ADS)

    Ravikiran, L.; Radhakrishnan, K.; Dharmarasu, N.; Agrawal, M.; Wang, Zilong; Bruno, Annalisa; Soci, Cesare; Lihuang, Tng; Kian Siong, Ang

    2016-09-01

    GaN Schottky metal-semiconductor-metal (MSM) UV photodetectors were fabricated on a 600 nm thick GaN layer, grown on 100 mm Si (111) substrate using an ammonia-MBE growth technique. In this report, the effect of device dimensions, applied bias and input power on the linearity of the GaN Schottky-based MSM photodetectors on Si substrate were investigated. Devices with larger interdigitated spacing, ‘S’ of 9.0 μm between the fingers resulted in good linearity and flat responsivity characteristics as a function of input power with an external quantum efficiency (EQE) of ˜33% at an applied bias of 15 V and an input power of 0.8 W m-2. With the decrease of ‘S’ to 3.0 μm, the EQE was found to increase to ˜97%. However, devices showed non linearity and drop in responsivity from flatness at higher input power. Moreover, the position of dropping from flatter responsivity was found to shift to lower powers with increased bias. The drop in the responsivity was attributed to the modulation of conductance in the MSM due to the trapping of electrons at the dislocations, resulting in the formation of depletion regions around them. In devices with lower ‘S’, both the image force reduction and the enhanced collection efficiency increased the photocurrent as well as the charging of the dislocations. This resulted in the increased depletion regions around the dislocations leading to the modulation of conductance and non-linearity.

  19. Nanoscale chirality in metal and semiconductor nanoparticles.

    PubMed

    Kumar, Jatish; Thomas, K George; Liz-Marzán, Luis M

    2016-10-18

    The field of chirality has recently seen a rejuvenation due to the observation of chirality in inorganic nanomaterials. The advancements in understanding the origin of nanoscale chirality and the potential applications of chiroptical nanomaterials in the areas of optics, catalysis and biosensing, among others, have opened up new avenues toward new concepts and design of novel materials. In this article, we review the concept of nanoscale chirality in metal nanoclusters and semiconductor quantum dots, then focus on recent experimental and theoretical advances in chiral metal nanoparticles and plasmonic chirality. Selected examples of potential applications and an outlook on the research on chiral nanomaterials are additionally provided.

  20. Nanoscale chirality in metal and semiconductor nanoparticles

    PubMed Central

    Thomas, K. George

    2016-01-01

    The field of chirality has recently seen a rejuvenation due to the observation of chirality in inorganic nanomaterials. The advancements in understanding the origin of nanoscale chirality and the potential applications of chiroptical nanomaterials in the areas of optics, catalysis and biosensing, among others, have opened up new avenues toward new concepts and design of novel materials. In this article, we review the concept of nanoscale chirality in metal nanoclusters and semiconductor quantum dots, then focus on recent experimental and theoretical advances in chiral metal nanoparticles and plasmonic chirality. Selected examples of potential applications and an outlook on the research on chiral nanomaterials are additionally provided. PMID:27752651

  1. rf-microwave switches based on reversible semiconductor-metal transition of VO2 thin films synthesized by pulsed-laser deposition

    NASA Astrophysics Data System (ADS)

    Dumas-Bouchiat, F.; Champeaux, C.; Catherinot, A.; Crunteanu, A.; Blondy, P.

    2007-11-01

    Microwave switching devices based on the semiconductor-metal transition of VO2 thin films were developped on two types of substrates (C-plane sapphire and SiO2/Si), and in both shunt and series configurations. Under thermal activation, the switches achieved up to 30-40dB average isolation of the radio-frequency (rf) signal on 500MHz -35GHz frequency band with weak insertion losses. These VO2-based switches can be electrically activated with commutation times less than 100ns, which make them promising candidates for realizing efficient and simple rf switches.

  2. Toward Photochemical Water Splitting Using Band-Gap-Narrowed Semiconductors and Transition-Metal Based Molecular Catalysts

    SciTech Connect

    Muckerman,J.T.; Rodriguez, J.A.; Fujita, E.

    2009-06-07

    We are carrying out coordinated theoretical and experimental studies of toward photochemical water splitting using band-gap-narrowed semiconductors (BGNSCs) with attached multi-electron molecular water oxidation and hydrogen production catalysts. We focus on the coupling between the materials properties and the H{sub 2}O redox chemistry, with an emphasis on attaining a fundamental understanding of the individual elementary steps in the following four processes: (1) Light-harvesting and charge-separation of stable oxide or oxide-derived semiconductors for solar-driven water splitting, including the discovery and characterization of the behavior of such materials at the aqueous interface; (2) The catalysis of the four-electron water oxidation by dinuclear hydroxo transition-metal complexes with quinonoid ligands, and the rational search for improved catalysts; (3) Transfer of the design principles learned from the elucidation of the DuBois-type hydrogenase model catalysts in acetonitrile to the rational design of two-electron hydrogen production catalysts for aqueous solution; (4) Combining these three elements to examine the function of oxidation catalysts on BGNSC photoanode surfaces and hydrogen production catalysts on cathode surfaces at the aqueous interface to understand the challenges to the efficient coupling of the materials functions.

  3. SOI metal-oxide-semiconductor field-effect transistor photon detector based on single-hole counting.

    PubMed

    Du, Wei; Inokawa, Hiroshi; Satoh, Hiroaki; Ono, Atsushi

    2011-08-01

    In this Letter, a scaled-down silicon-on-insulator (SOI) metal-oxide-semiconductor field-effect transistor (MOSFET) is characterized as a photon detector, where photogenerated individual holes are trapped below the negatively biased gate and modulate stepwise the electron current flowing in the bottom channel induced by the positive substrate bias. The output waveforms exhibit clear separation of current levels corresponding to different numbers of trapped holes. Considering this capability of single-hole counting, a small dark count of less than 0.02 s(-1) at room temperature, and low operation voltage of 1 V, SOI MOSFET could be a unique photon-number-resolving detector if the small quantum efficiency were improved.

  4. Ratiometric, filter-free optical sensor based on a complementary metal oxide semiconductor buried double junction photodiode.

    PubMed

    Yung, Ka Yi; Zhan, Zhiyong; Titus, Albert H; Baker, Gary A; Bright, Frank V

    2015-07-16

    We report a complementary metal oxide semiconductor integrated circuit (CMOS IC) with a buried double junction (BDJ) photodiode that (i) provides a real-time output signal that is related to the intensity ratio at two emission wavelengths and (ii) simultaneously eliminates the need for an optical filter to block Rayleigh scatter. We demonstrate the BDJ platform performance for gaseous NH3 and aqueous pH detection. We also compare the BDJ performance to parallel results obtained by using a slew scanned fluorimeter (SSF). The BDJ results are functionally equivalent to the SSF results without the need for any wavelength filtering or monochromators and the BDJ platform is not prone to errors associated with source intensity fluctuations or sensor signal drift.

  5. Ultra low-loss, isotropic optical negative-index metamaterial based on hybrid metal-semiconductor nanowires

    PubMed Central

    Paniagua-Domínguez, R.; Abujetas, D. R.; Sánchez-Gil, J. A.

    2013-01-01

    Recently, many fascinating properties predicted for metamaterials (negative refraction, superlensing, electromagnetic cloaking,…) were experimentally demonstrated. Unfortunately, the best achievements have no direct translation to the optical domain, without being burdened by technological and conceptual difficulties. Of particular importance within the realm of optical negative-index metamaterials (NIM), is the issue of simultaneously achieving strong electric and magnetic responses and low associated losses. Here, hybrid metal-semiconductor nanowires are proposed as building blocks of optical NIMs. The metamaterial thus obtained, highly isotropic in the plane normal to the nanowires, presents a negative index of refraction in the near-infrared, with values of the real part well below −1, and extremely low losses (an order of magnitude better than present optical NIMs). Tunability of the system allows to select the operating range in the whole telecom spectrum. The design is proven in configurations such as prisms and slabs, directly observing negative refraction. PMID:23514968

  6. Method of physical vapor deposition of metal oxides on semiconductors

    DOEpatents

    Norton, David P.

    2001-01-01

    A process for growing a metal oxide thin film upon a semiconductor surface with a physical vapor deposition technique in a high-vacuum environment and a structure formed with the process involves the steps of heating the semiconductor surface and introducing hydrogen gas into the high-vacuum environment to develop conditions at the semiconductor surface which are favorable for growing the desired metal oxide upon the semiconductor surface yet is unfavorable for the formation of any native oxides upon the semiconductor. More specifically, the temperature of the semiconductor surface and the ratio of hydrogen partial pressure to water pressure within the vacuum environment are high enough to render the formation of native oxides on the semiconductor surface thermodynamically unstable yet are not so high that the formation of the desired metal oxide on the semiconductor surface is thermodynamically unstable. Having established these conditions, constituent atoms of the metal oxide to be deposited upon the semiconductor surface are directed toward the surface of the semiconductor by a physical vapor deposition technique so that the atoms come to rest upon the semiconductor surface as a thin film of metal oxide with no native oxide at the semiconductor surface/thin film interface. An example of a structure formed by this method includes an epitaxial thin film of (001)-oriented CeO.sub.2 overlying a substrate of (001) Ge.

  7. New Concentric Electrode Metal-Semiconductor-Metal Photodetectors

    NASA Technical Reports Server (NTRS)

    Towe, Elias

    1996-01-01

    A new metal-semiconductor-metal (MSM) photodetector geometry is proposed. The new device has concentric metal electrodes which exhibit a high degree of symmetry and a design flexibility absent in the conventional MSM device. The concentric electrodes are biased to alternating potentials as in the conventional interdigitated device. Because of the high symmetry configuration, however, the new device also has a lower effective capacitance. This device and the conventional MSM structure are analyzed within a common theoretical framework which allows for the comparison of the important performance characteristics.

  8. Synthesis and characterization of three-dimensional transition metal ions doped zinc oxide based dilute magnetic semiconductor thin films

    NASA Astrophysics Data System (ADS)

    Samanta, Kousik

    Dilute magnetic semiconductors (DMS), especially 3d-transition metal (TM) doped ZnO based DMS materials are the most promising candidates for optoelectronics and spintronics applications; e.g. in spin light emitting diode (SLED), spin transistors, and spin field effect transistors (SFET), etc. In the present dissertation, thin films of Zn1-xTMxO (TM = Co2+, Cu2+, and Mn2+) were grown on (0001) oriented Al2O3 substrates by pulsed laser deposition (PLD) technique. The films were highly c-axis oriented, nearly single crystalline, and defects free for a limited concentration of the dilution of transition metal ions. In particular, we have obtained single crystalline phases of Zn1-xTMxO thin films for up to 10, 3, and 5 stoichiometric percentages of Co2+, Cu2+, and Mn2+ respectively. Raman micro-probe system was used to understand the structural and lattice dynamical properties at different physical conditions. The confinement of optical phonons in the disorder lattice was explained by alloy potential fluctuation (APF) using a spatial correlation (SC) model. The detailed analysis of the optical phonon behavior in disorder lattice confirmed the substitution of the transition metal ions in Zn 2+ site of the ZnO host lattice. The secondary phases of ZnCo 2O4, CuO, and ZnMn2O4 were detected in higher Co, Cu, and Mn doped ZnO thin films respectively; where as, XRD did not detect these secondary phases in the same samples. Room temperature ferromagnetism was observed in Co2+ and Cu2+ ions doped ZnO thin films with maximum saturation magnetization (Ms) of 1.0 and 0.76 muB respectively. The origin of the observed ferromagnetism in Zn1-xCoxO thin films was tested by the controlled introduction of shallow donors (Al) in Zn0.9-x Co0.1O:Alx (x = 0.005 and 0.01) thin films. The saturation magnetization for the 10% Co-doped ZnO (1.0 muB /Co) at 300K reduced (˜0.25 muB/Co) due to Al doping. The observed ferromagnetism and the reduction due to Al doping can be explained by the Bound

  9. Subwavelength metal-optic semiconductor nanopatch lasers.

    PubMed

    Yu, Kyoungsik; Lakhani, Amit; Wu, Ming C

    2010-04-26

    We report on near infrared semiconductor nanopatch lasers with subwavelength-scale physical dimensions (0.019 cubic wavelengths) and effective mode volumes (0.0017 cubic wavelengths). We observe lasing in the two most fundamental optical modes which resemble oscillating electrical and magnetic dipoles. The ultra-small laser volume is achieved with the presence of nanoscale metal patches which suppress electromagnetic radiation into free-space and convert a leaky cavity into a highly-confined subwavelength optical resonator. Such ultra-small lasers with metallodielectric cavities will enable broad applications in data storage, biological sensing, and on-chip optical communication.

  10. Metal oxide semiconductor thin-film transistors for flexible electronics

    NASA Astrophysics Data System (ADS)

    Petti, Luisa; Münzenrieder, Niko; Vogt, Christian; Faber, Hendrik; Büthe, Lars; Cantarella, Giuseppe; Bottacchi, Francesca; Anthopoulos, Thomas D.; Tröster, Gerhard

    2016-06-01

    The field of flexible electronics has rapidly expanded over the last decades, pioneering novel applications, such as wearable and textile integrated devices, seamless and embedded patch-like systems, soft electronic skins, as well as imperceptible and transient implants. The possibility to revolutionize our daily life with such disruptive appliances has fueled the quest for electronic devices which yield good electrical and mechanical performance and are at the same time light-weight, transparent, conformable, stretchable, and even biodegradable. Flexible metal oxide semiconductor thin-film transistors (TFTs) can fulfill all these requirements and are therefore considered the most promising technology for tomorrow's electronics. This review reflects the establishment of flexible metal oxide semiconductor TFTs, from the development of single devices, large-area circuits, up to entirely integrated systems. First, an introduction on metal oxide semiconductor TFTs is given, where the history of the field is revisited, the TFT configurations and operating principles are presented, and the main issues and technological challenges faced in the area are analyzed. Then, the recent advances achieved for flexible n-type metal oxide semiconductor TFTs manufactured by physical vapor deposition methods and solution-processing techniques are summarized. In particular, the ability of flexible metal oxide semiconductor TFTs to combine low temperature fabrication, high carrier mobility, large frequency operation, extreme mechanical bendability, together with transparency, conformability, stretchability, and water dissolubility is shown. Afterward, a detailed analysis of the most promising metal oxide semiconducting materials developed to realize the state-of-the-art flexible p-type TFTs is given. Next, the recent progresses obtained for flexible metal oxide semiconductor-based electronic circuits, realized with both unipolar and complementary technology, are reported. In particular

  11. Nanoscale Metal Oxide Semiconductors for Gas Sensing

    NASA Technical Reports Server (NTRS)

    Hunter, Gary W.; Evans, Laura; Xu, Jennifer C.; VanderWal, Randy L.; Berger, Gordon M.; Kulis, Michael J.

    2011-01-01

    A report describes the fabrication and testing of nanoscale metal oxide semiconductors (MOSs) for gas and chemical sensing. This document examines the relationship between processing approaches and resulting sensor behavior. This is a core question related to a range of applications of nanotechnology and a number of different synthesis methods are discussed: thermal evaporation- condensation (TEC), controlled oxidation, and electrospinning. Advantages and limitations of each technique are listed, providing a processing overview to developers of nanotechnology- based systems. The results of a significant amount of testing and comparison are also described. A comparison is made between SnO2, ZnO, and TiO2 single-crystal nanowires and SnO2 polycrystalline nanofibers for gas sensing. The TECsynthesized single-crystal nanowires offer uniform crystal surfaces, resistance to sintering, and their synthesis may be done apart from the substrate. The TECproduced nanowire response is very low, even at the operating temperature of 200 C. In contrast, the electrospun polycrystalline nanofiber response is high, suggesting that junction potentials are superior to a continuous surface depletion layer as a transduction mechanism for chemisorption. Using a catalyst deposited upon the surface in the form of nanoparticles yields dramatic gains in sensitivity for both nanostructured, one-dimensional forms. For the nanowire materials, the response magnitude and response rate uniformly increase with increasing operating temperature. Such changes are interpreted in terms of accelerated surface diffusional processes, yielding greater access to chemisorbed oxygen species and faster dissociative chemisorption, respectively. Regardless of operating temperature, sensitivity of the nanofibers is a factor of 10 to 100 greater than that of nanowires with the same catalyst for the same test condition. In summary, nanostructure appears critical to governing the reactivity, as measured by electrical

  12. Lattice matched semiconductor growth on crystalline metallic substrates

    DOEpatents

    Norman, Andrew G; Ptak, Aaron J; McMahon, William E

    2013-11-05

    Methods of fabricating a semiconductor layer or device and said devices are disclosed. The methods include but are not limited to providing a metal or metal alloy substrate having a crystalline surface with a known lattice parameter (a). The methods further include growing a crystalline semiconductor alloy layer on the crystalline substrate surface by coincident site lattice matched epitaxy. The semiconductor layer may be grown without any buffer layer between the alloy and the crystalline surface of the substrate. The semiconductor alloy may be prepared to have a lattice parameter (a') that is related to the lattice parameter (a). The semiconductor alloy may further be prepared to have a selected band gap.

  13. A Customized Metal Oxide Semiconductor-Based Gas Sensor Array for Onion Quality Evaluation: System Development and Characterization

    PubMed Central

    Konduru, Tharun; Rains, Glen C.; Li, Changying

    2015-01-01

    A gas sensor array, consisting of seven Metal Oxide Semiconductor (MOS) sensors that are sensitive to a wide range of organic volatile compounds was developed to detect rotten onions during storage. These MOS sensors were enclosed in a specially designed Teflon chamber equipped with a gas delivery system to pump volatiles from the onion samples into the chamber. The electronic circuit mainly comprised a microcontroller, non-volatile memory chip, and trickle-charge real time clock chip, serial communication chip, and parallel LCD panel. User preferences are communicated with the on-board microcontroller through a graphical user interface developed using LabVIEW. The developed gas sensor array was characterized and the discrimination potential was tested by exposing it to three different concentrations of acetone (ketone), acetonitrile (nitrile), ethyl acetate (ester), and ethanol (alcohol). The gas sensor array could differentiate the four chemicals of same concentrations and different concentrations within the chemical with significant difference. Experiment results also showed that the system was able to discriminate two concentrations (196 and 1964 ppm) of methlypropyl sulfide and two concentrations (145 and 1452 ppm) of 2-nonanone, two key volatile compounds emitted by rotten onions. As a proof of concept, the gas sensor array was able to achieve 89% correct classification of sour skin infected onions. The customized low-cost gas sensor array could be a useful tool to detect onion postharvest diseases in storage. PMID:25587975

  14. Anomalous wear-out phenomena of europium-implanted light emitters based on a metal-oxide-semiconductor structure

    NASA Astrophysics Data System (ADS)

    Rebohle, L.; Lehmann, J.; Prucnal, S.; Nazarov, A.; Tyagulskii, I.; Tyagulskii, S.; Kanjilal, A.; Voelskow, M.; Grambole, D.; Skorupa, W.; Helm, M.

    2009-12-01

    The anomalous wear-out phenomena of Eu-implanted metal-oxide-semiconductor devices were investigated. It will be shown that in contrast to other rare earth elements the electroluminescence (EL) intensity of Eu-implanted SiO2 layers can rise under constant current injection before the known EL quenching will start. Under certain circumstances, this rise may amount up to two orders of magnitude. The EL behavior will be correlated with the microstructural and electrical properties of the devices. Transmission electron microscopy and Rutherford backscattering spectroscopy were applied to trace the development of Eu/Eu oxide clusters and the diffusion of Eu to the interfaces of the gate oxide layer. The hydrogen profile within the SiO2-SiON interface region was determined by nuclear reaction analysis. Current-voltage characteristics, EL decay times, and the progression of the voltage and the EL spectrum with increasing charge injection were measured to study charge and trapping phenomena in the oxide layer to reveal details of the EL excitation mechanism. A first qualitative model for the anomalous life time behavior is proposed.

  15. A customized metal oxide semiconductor-based gas sensor array for onion quality evaluation: system development and characterization.

    PubMed

    Konduru, Tharun; Rains, Glen C; Li, Changying

    2015-01-12

    A gas sensor array, consisting of seven Metal Oxide Semiconductor (MOS) sensors that are sensitive to a wide range of organic volatile compounds was developed to detect rotten onions during storage. These MOS sensors were enclosed in a specially designed Teflon chamber equipped with a gas delivery system to pump volatiles from the onion samples into the chamber. The electronic circuit mainly comprised a microcontroller, non-volatile memory chip, and trickle-charge real time clock chip, serial communication chip, and parallel LCD panel. User preferences are communicated with the on-board microcontroller through a graphical user interface developed using LabVIEW. The developed gas sensor array was characterized and the discrimination potential was tested by exposing it to three different concentrations of acetone (ketone), acetonitrile (nitrile), ethyl acetate (ester), and ethanol (alcohol). The gas sensor array could differentiate the four chemicals of same concentrations and different concentrations within the chemical with significant difference. Experiment results also showed that the system was able to discriminate two concentrations (196 and 1964 ppm) of methlypropyl sulfide and two concentrations (145 and 1452 ppm) of 2-nonanone, two key volatile compounds emitted by rotten onions. As a proof of concept, the gas sensor array was able to achieve 89% correct classification of sour skin infected onions. The customized low-cost gas sensor array could be a useful tool to detect onion postharvest diseases in storage.

  16. Toward metal-organic insulator-semiconductor solar cells, based on molecular monolayer self-assembly on n-Si

    NASA Astrophysics Data System (ADS)

    Har-Lavan, Rotem; Ron, Izhar; Thieblemont, Florent; Cahen, David

    2009-01-01

    Alkyl chain molecules on n-Si were used to test the concept of hybrid metal-organic insulator-semiconductor (MOIS) solar cells. Test structures were made by binding alkyl chain molecules via Si-O-C bonds to oxide-free n-Si surfaces, using self-assembly. With thiol groups at the terminals away from the Si, binding of Au nanoparticles, followed by electroless Au plating yields semitransparent top contacts. First cells give, under 25 mW/cm2 white light illumination, open-circuit voltage Voc=0.48 V and fill factor FF=0.58. Because with sulfur termination the molecules have a dipole that limits inversion of the Si, we also used methyl-terminated monolayers. Even though then we can work, at this point, only with a Hg top contact, without chemical bond to the molecules, we get, using only radiation (˜AM 1.5) collected around the contact, the expected higher Voc=0.54 V, and respectable 0.8 FF, justifying further MOIS cell development.

  17. Metal-Insulator-Semiconductor Nanowire Network Solar Cells.

    PubMed

    Oener, Sebastian Z; van de Groep, Jorik; Macco, Bart; Bronsveld, Paula C P; Kessels, W M M; Polman, Albert; Garnett, Erik C

    2016-06-08

    Metal-insulator-semiconductor (MIS) junctions provide the charge separating properties of Schottky junctions while circumventing the direct and detrimental contact of the metal with the semiconductor. A passivating and tunnel dielectric is used as a separation layer to reduce carrier recombination and remove Fermi level pinning. When applied to solar cells, these junctions result in two main advantages over traditional p-n-junction solar cells: a highly simplified fabrication process and excellent passivation properties and hence high open-circuit voltages. However, one major drawback of metal-insulator-semiconductor solar cells is that a continuous metal layer is needed to form a junction at the surface of the silicon, which decreases the optical transmittance and hence short-circuit current density. The decrease of transmittance with increasing metal coverage, however, can be overcome by nanoscale structures. Nanowire networks exhibit precisely the properties that are required for MIS solar cells: closely spaced and conductive metal wires to induce an inversion layer for homogeneous charge carrier extraction and simultaneously a high optical transparency. We experimentally demonstrate the nanowire MIS concept by using it to make silicon solar cells with a measured energy conversion efficiency of 7% (∼11% after correction), an effective open-circuit voltage (Voc) of 560 mV and estimated short-circuit current density (Jsc) of 33 mA/cm(2). Furthermore, we show that the metal nanowire network can serve additionally as an etch mask to pattern inverted nanopyramids, decreasing the reflectivity substantially from 36% to ∼4%. Our extensive analysis points out a path toward nanowire based MIS solar cells that exhibit both high Voc and Jsc values.

  18. (Plasmonic Metal Core)/(Semiconductor Shell) Nanostructures

    NASA Astrophysics Data System (ADS)

    Fang, Caihong

    Over the past several years, integration of metal nanocrystals that can support localized surface plasmon has been demonstrated as one of the most promising methods to the improvement of the light-harvesting efficiency of semiconductors. Ag and Au nanocrystals have been extensively hybridized with semiconductors by either deposition or anchoring. However, metal nanocrystals tend to aggregate, reshape, detach, or grow into large nanocrystals, leading to a loss of the unique properties seen in the original nanocrystals. Fortunately, core/shell nanostructures, circumventing the aforementioned problems, have been demonstrated to exhibit superior photoactivities. To further improve the light-harvesting applications of (plasmonic metal core)/(semiconductor shell) nanostructures, it is vital to understand the plasmonic and structural evolutions during the preparation processes, design novel hybrid nanostructures, and improve their light-harvesting performances. In this thesis, I therefore studied the plasmonic and structural evolutions during the formation of (Ag core)/(Ag2S shell) nanostructures. Moreover, I also prepared (noble metal core)/(TiO2 shell) nanostructures and investigated their plasmonic properties and photon-harvesting applications. Clear understanding of the sulfidation process can enable fine control of the plasmonic properties as well as the structural composition of Ag/Ag 2S nanomaterials. Therefore, I investigated the plasmonic and structural variations during the sulfidation process of Ag nanocubes both experimentally and numerically. The sulfidation reactions were carried out at both the ensemble and single-particle levels. Electrodynamic simulations were also employed to study the variations of the plasmonic properties and plasmon modes. Both experiment and simulation results revealed that sulfidation initiates at the vertices of Ag nanocubes. Ag nanocubes are then gradually truncated and each nanocube becomes a nanosphere eventually. The cubic

  19. Thienoacene-based organic semiconductors.

    PubMed

    Takimiya, Kazuo; Shinamura, Shoji; Osaka, Itaru; Miyazaki, Eigo

    2011-10-11

    Thienoacenes consist of fused thiophene rings in a ladder-type molecular structure and have been intensively studied as potential organic semiconductors for organic field-effect transistors (OFETs) in the last decade. They are reviewed here. Despite their simple and similar molecular structures, the hitherto reported properties of thienoacene-based OFETs are rather diverse. This Review focuses on four classes of thienoacenes, which are classified in terms of their chemical structures, and elucidates the molecular electronic structure of each class. The packing structures of thienoacenes and the thus-estimated solid-state electronic structures are correlated to their carrier transport properties in OFET devices. With this perspective of the molecular structures of thienoacenes and their carrier transport properties in OFET devices, the structure-property relationships in thienoacene-based organic semiconductors are discussed. The discussion provides insight into new molecular design strategies for the development of superior organic semiconductors.

  20. Characterization of GaN-based metal-semiconductor field-effect transistors by comparing electroluminescence, photoionization, and cathodoluminescence spectroscopies

    NASA Astrophysics Data System (ADS)

    Armani, N.; Grillo, V.; Salviati, G.; Manfredi, M.; Pavesi, M.; Chini, A.; Meneghesso, G.; Zanoni, E.

    2002-09-01

    We report on a methodological comparison between photocurrent (PC), electroluminescence (EL), and cathodoluminescence (CL) investigations on GaN metal-semiconductor field-effect transistors. The purpose of this work is to show the effectiveness and the complementarity of these experimental techniques and to investigate the presence and nature of electron traps which limit the performances of the devices. PC measurements reveal four distinct energy levels, located at 1.75, 2.32, 2.67, and 3.15 eV, responsible for current collapse. The 1.75 eV level has also been observed in low temperature EL curves. The 2.32 and 2.67 eV levels, on the basis of the comparison with CL and EL results, can be correlated with the so-called "yellow band," located at 2.2 eV. The origin of 1.75 and 3.15 eV levels is at present unknown, however a nonradiative nature has been attributed to the 3.15 eV level, due to the absence of this signature in both CL and EL spectra. The luminescence measurements also reveal the presence of the donor-acceptor pair emission at 3.27 eV and the near-band-edge transition at 3.45 eV. EL measurements show a series of emission peaks in the energy range between 1 and 1.4 eV, while the CL spectra reveal a broadband at 2.8 eV, which arises mainly from the semi-insulating layer. This result has been obtained by increasing the energy of the CL electron beam, allowing us to investigate both the conduction channel and the layers underneath it.

  1. Development of new generation of perovskite based noble metal/semiconductor photocatalysts for visible-light-driven hydrogen production

    NASA Astrophysics Data System (ADS)

    Shen, Peichuan

    In recent decades, semiconductor photocatalysis has attracted a growing attention as a possible alternative to existing methods of hydrogen production, hydrocarbon conversion and organic compound oxidation. Many types of photocatalysts have been developed and tested for photocatalytic applications. However, most of them do not have notable activity in visible light region, which limits their practical applications. Development of photocatalysts, which can be activated by visible light provides a promising way forward to utilize both UV and visible portions of solar spectrum. In this thesis, two main methods to advance visible light driven photocatalysis, such as bandgap modification through doping and co-catalyst development, are investigated. The photocatalysts studied in this thesis included CdS and SrTiO3, which were extensively investigated and characterized. Rhodium doped strontium titanate was synthesized through different preparation methods. The synthesized samples have been investigated by various characterization techniques including XRD, TEM, STEM, XPS and UV-Vis spectroscopy. The effect of preparation conditions, such as doping concentration, calcination temperature and pH have been investigated and optimized. In addition, the photocatalytic activities for hydrogen production of the samples synthesized by different preparation methods were also studied. Among the preparation methods, polymerizable complex (PC) method was found to be the most effective synthesis method for SrTiO3: Rh. The samples prepared by PC method had higher photocatalytic activity as compared to that of samples synthesized by solid state reaction method and hydrothermal method. The reasons might be attributed to more effective doping and higher surface area. The results of this work suggest that PC method can also be applied to develop other perovskite materials for photocatalytic applications. Co-catalyst development for enhancement of photocatalytic hydrogen production is also

  2. Leakage Current Mechanism of InN-Based Metal-Insulator-Semiconductor Structures with Al2O3 as Dielectric Layers

    NASA Astrophysics Data System (ADS)

    Wang, X.; Zhang, G. Z.; Xu, Y.; Gan, X. W.; Chen, C.; Wang, Z.; Wang, Y.; Wang, J. L.; Wang, T.; Wu, H.; Liu, C.

    2016-01-01

    InN-based metal-insulator-semiconductor (MIS) structures were prepared with Al2O3 as the gate oxides. Surface morphologies of InN films are improved with increasing Mg doping concentrations. At high frequencies, the measured capacitance densities deviate from the real ones with turning frequencies inversely proportional to series resistances. An ultralow leakage current density of 1.35 × 10-9 A/cm2 at 1 V is obtained. Fowler-Nordheim tunneling is the main mechanism of the leakage current at high fields, while Schottky emission dominates at low fields. Capacitance densities shift with different biases, indicating that the InN-based MIS structures can serve as potential candidates for MIS field-effect transistors.

  3. GaAs metal-oxide-semiconductor based non-volatile flash memory devices with InAs quantum dots as charge storage nodes

    SciTech Connect

    Islam, Sk Masiul Chowdhury, Sisir; Sarkar, Krishnendu; Nagabhushan, B.; Banerji, P.; Chakraborty, S.

    2015-06-24

    Ultra-thin InP passivated GaAs metal-oxide-semiconductor based non-volatile flash memory devices were fabricated using InAs quantum dots (QDs) as charge storing elements by metal organic chemical vapor deposition technique to study the efficacy of the QDs as charge storage elements. The grown QDs were embedded between two high-k dielectric such as HfO{sub 2} and ZrO{sub 2}, which were used for tunneling and control oxide layers, respectively. The size and density of the QDs were found to be 5 nm and 1.8×10{sup 11} cm{sup −2}, respectively. The device with a structure Metal/ZrO{sub 2}/InAs QDs/HfO{sub 2}/GaAs/Metal shows maximum memory window equivalent to 6.87 V. The device also exhibits low leakage current density of the order of 10{sup −6} A/cm{sup 2} and reasonably good charge retention characteristics. The low value of leakage current in the fabricated memory device is attributed to the Coulomb blockade effect influenced by quantum confinement as well as reduction of interface trap states by ultra-thin InP passivation on GaAs prior to HfO{sub 2} deposition.

  4. Phase reactions at semiconductor metallization interfaces

    NASA Astrophysics Data System (ADS)

    Bhansali, A. S.; Ko, D. H.; Sinclair, R.

    1990-11-01

    During, or following, the fabrication of a microelectronic device, it is possible for the material phases at critical interfaces to react with one another, and so alter the elec-trical performance. This is particularly important for metallization contacts to semi-conductors and for multilevel interconnects. The present article shows that application of phase diagram principles can successfully predict the mutual stability or chemical reactivity in such circumstances. Since most relevant phase diagrams are not available, it is shown how they may be calculated from known thermochemical data, or deduced from observations on thin-film reactions. The article is illustrated by the behavior of titanium silicide with a diffusion barrier layer (TiN) and the surrounding dielectric SiO2. In addition the Al-Si-O-N and W-N-Ga-As systems are described, and metastable amor-phous phase formation at the Ti-Si interface is discussed.

  5. Growth and characterization of rutile TiO2 nanorods on various substrates with fabricated fast-response metal-semiconductor-metal UV detector based on Si substrate

    NASA Astrophysics Data System (ADS)

    Selman, Abbas M.; Hassan, Z.

    2015-07-01

    Rutile-phase titanium dioxide nanorods (NRs) were synthesized successfully on p-type silicon (Si) (1 1 1), c-plane sapphire (Al2O3), glass coated with fluorine-doped tin oxide (FTO), glass, and quartz substrates via chemical bath deposition method. All substrates were seeded with a TiO2 seed layer synthesized with a radio frequency reactive magnetron sputtering system prior to NRs growth. The effect of substrate type on structural, morphological, and optical properties of rutile TiO2 NRs was studied. X-ray diffraction, Raman spectroscopy, and field-emission scanning electron microscopy analyses showed the tetragonal rutile structure of the synthesized TiO2 NRs. Optical properties were examined with photoluminescence (PL) spectroscopy of the grown rutile NRs on all substrates, with the spectra exhibiting one strong ultraviolet emission peak intensity compared with broad visible peak. The optimal sample of rutile NRs was grown on Si substrate. Thus, a fast-response metal-semiconductor-metal ultraviolet (UV) detector was fabricated. Upon exposure to 365 nm light (2.3 mW/cm2) at 5 V bias, the device displays 2.62 × 10-5 A photocurrent, and the response and recovery times are calculated as 18.5 and 19.1 ms, respectively. These results demonstrate that the fabricated high-quality photodiode is a promising candidate as a low-cost UV photodetector for commercially integrated photoelectronic applications.

  6. Origin of the performances degradation of two-dimensional-based metal-oxide-semiconductor field effect transistors in the sub-10 nm regime: A first-principles study

    NASA Astrophysics Data System (ADS)

    Lu, Anh Khoa Augustin; Pourtois, Geoffrey; Agarwal, Tarun; Afzalian, Aryan; Radu, Iuliana P.; Houssa, Michel

    2016-01-01

    The impact of the scaling of the channel length on the performances of metal-oxide-semiconductor field effect transistors, based on two-dimensional (2D) channel materials, is theoretically investigated, using density functional theory combined with the non-equilibrium Green's function method. It is found that the scaling of the channel length below 10 nm leads to strong device performance degradations. Our simulations reveal that this degradation is essentially due to the tunneling current flowing between the source and the drain in these aggressively scaled devices. It is shown that this electron tunneling process is modulated by the effective mass of the 2D channel material, and sets the limit of the scaling in future transistor designs.

  7. Thermal conductivity switch: Optimal semiconductor/metal melting transition

    NASA Astrophysics Data System (ADS)

    Kim, Kwangnam; Kaviany, Massoud

    2016-10-01

    Scrutinizing distinct solid/liquid (s /l ) and solid/solid (s /s ) phase transitions (passive transitions) for large change in bulk (and homogenous) thermal conductivity, we find the s /l semiconductor/metal (S/M) transition produces the largest dimensionless thermal conductivity switch (TCS) figure of merit ZTCS (change in thermal conductivity divided by smaller conductivity). At melting temperature, the solid phonon and liquid molecular thermal conductivities are comparable and generally small, so the TCS requires localized electron solid and delocalized electron liquid states. For cyclic phase reversibility, the congruent phase transition (no change in composition) is as important as the thermal transport. We identify X Sb and X As (X =Al , Cd, Ga, In, Zn) and describe atomic-structural metrics for large ZTCS, then show the superiority of S/M phonon- to electron-dominated transport melting transition. We use existing experimental results and theoretical and ab initio calculations of the related properties for both phases (including the Kubo-Greenwood and Bridgman formulations of liquid conductivities). The 5 p orbital of Sb contributes to the semiconductor behavior in the solid-phase band gap and upon disorder and bond-length changes in the liquid phase this changes to metallic, creating the large contrast in thermal conductivity. The charge density distribution, electronic localization function, and electron density of states are used to mark this S/M transition. For optimal TCS, we examine the elemental selection from the transition, basic, and semimetals and semiconductor groups. For CdSb, addition of residual Ag suppresses the bipolar conductivity and its ZTCS is over 7, and for Zn3Sb2 it is expected to be over 14, based on the structure and transport properties of the better-known β -Zn4Sb3 . This is the highest ZTCS identified. In addition to the metallic melting, the high ZTCS is due to the electron-poor nature of II-V semiconductors, leading to the

  8. Vibronic states in organic semiconductors based on non-metal naphthalocyanine. Detection of heterocyclic phthalocyanine compounds in a flexible dielectric matrix

    SciTech Connect

    Belogorokhov, I. A.; Tikhonov, E. V.; Dronov, M. A.; Belogorokhova, L. I.; Ryabchikov, Yu. V.; Tomilova, L. G.; Khokhlov, D. R.

    2012-01-15

    The vibronic properties of semiconductor structures based on non-metal naphthalocyanine molecules are studied using IR and Raman spectroscopy methods. New absorption lines in the transmission spectra of such materials are detected and identified. Three transmission lines are observed in the range 2830-3028 cm{sup -1}, which characterize carbon-hydrogen bonds of peripheral molecular groups. Their spectral positions are 2959, 2906, and 2866 cm{sup -1}. It is detected that the phthalocyanine ring can also exhibit its specific vibronic properties in the Raman spectra at 767, 717, and 679 cm{sup -1}. The naphthalocyanine molecule in the organic dielectric matrix of microfibers is described using IR spectroscopy. It is shown that the set of vibrations characterizing the isoindol group, pyrrole ring, naphtha group, and C-H bonds, allows an accurate enough description of the vibronic states of the naphthalocyanine complex in complex heterostructures to be made. The spectral range with fundamental modes, characterizing a naphthalocyanine semiconductor in a heterostructure, is 600-1600 cm{sup -1}. A comparison of the compositions of complex systems with a similar heterostructure containing lutetium diphthalocyanine demonstrated few errors.

  9. Valorization of GaN based metal-organic chemical vapor deposition dust a semiconductor power device industry waste through mechanochemical oxidation and leaching: A sustainable green process.

    PubMed

    Swain, Basudev; Mishra, Chinmayee; Lee, Chan Gi; Park, Kyung-Soo; Lee, Kun-Jae

    2015-07-01

    Dust generated during metal organic vapor deposition (MOCVD) process of GaN based semiconductor power device industry contains significant amounts of gallium and indium. These semiconductor power device industry wastes contain gallium as GaN and Ga0.97N0.9O0.09 is a concern for the environment which can add value through recycling. In the present study, this waste is recycled through mechanochemical oxidation and leaching. For quantitative recovery of gallium, two different mechanochemical oxidation leaching process flow sheets are proposed. In one process, first the Ga0.97N0.9O0.09 of the MOCVD dust is leached at the optimum condition. Subsequently, the leach residue is mechanochemically treated, followed by oxidative annealing and finally re-leached. In the second process, the MOCVD waste dust is mechanochemically treated, followed by oxidative annealing and finally leached. Both of these treatment processes are competitive with each other, appropriate for gallium leaching and treatment of the waste MOCVD dust. Without mechanochemical oxidation, 40.11 and 1.86 w/w% of gallium and Indium are leached using 4M HCl, 100°C and pulp density of 100 kg/m(3,) respectively. After mechanochemical oxidation, both these processes achieved 90 w/w% of gallium and 1.86 w/w% of indium leaching at their optimum condition.

  10. Fabrication of porous materials (metal, metal oxide and semiconductor) through an aerosol-assisted route

    NASA Astrophysics Data System (ADS)

    Sohn, Hiesang

    Porous materials have gained attraction owing to their vast applications in catalysts, sensors, energy storage devices, bio-devices and other areas. To date, various porous materials were synthesized through soft and hard templating approaches. However, a general synthesis method for porous non-oxide materials, metal alloys and semiconductors with tunable structure, composition and morphology has not been developed yet. To address this challenge, this thesis presents an aerosol method towards the synthesis of such materials and their applications for catalysis, hydrogen storage, Li-batteries and photo-catalysis. The first part of this thesis presents the synthesis of porous metals, metal oxides, and semiconductors with controlled pore structure, crystalline structure and morphology. In these synthesis processes, metal salts and organic ligands were employed as precursors to create porous metal-carbon frameworks. During the aerosol process, primary metal clusters and nanoparticles were formed, which were coagulated/ aggregated forming the porous particles. Various porous particles, such as those of metals (e.g., Ni, Pt, Co, Fe, and Ni xPt(1-x)), metal oxides (e.g., Fe3O4 and SnO2) and semiconductors (e.g., CdS, CuInS2, CuInS 2x-ZnS(1-x), and CuInS2x-TiO2(1-x)) were synthesized. The morphology, porous structure and crystalline structure of the particles were regulated through both templating and non-templating methods. The second part of this thesis explores the applications of these materials, including propylene hydrogenation and H2 uptake capacity of porous Ni, NiPt alloys and Ni-Pt composites, Li-storage of Fe3O4 and SnO2, photodegradation of CuInS2-based semiconductors. The effects of morphology, compositions, and porous structure on the device performance were systematically investigated. Overall, this dissertation work unveiled a simple synthesis approach for porous particles of metals, metal alloys, metal oxides, and semiconductors with controlled

  11. Thermoelectric Performance Enhancement by Surrounding Crystalline Semiconductors with Metallic Nanoparticles

    NASA Technical Reports Server (NTRS)

    Kim, Hyun-Jung; King, Glen C.; Park, Yeonjoon; Lee, Kunik; Choi, Sang H.

    2011-01-01

    Direct conversion of thermal energy to electricity by thermoelectric (TE) devices may play a key role in future energy production and utilization. However, relatively poor performance of current TE materials has slowed development of new energy conversion applications. Recent reports have shown that the dimensionless Figure of Merit, ZT, for TE devices can be increased beyond the state-of-the-art level by nanoscale structuring of materials to reduce their thermal conductivity. New morphologically designed TE materials have been fabricated at the NASA Langley Research Center, and their characterization is underway. These newly designed materials are based on semiconductor crystal grains whose surfaces are surrounded by metallic nanoparticles. The nanoscale particles are used to tailor the thermal and electrical conduction properties for TE applications by altering the phonon and electron transport pathways. A sample of bismuth telluride decorated with metallic nanoparticles showed less thermal conductivity and twice the electrical conductivity at room temperature as compared to pure Bi2Te3. Apparently, electrons cross easily between semiconductor crystal grains via the intervening metallic nanoparticle bridges, but phonons are scattered at the interfacing gaps. Hence, if the interfacing gap is larger than the mean free path of the phonon, thermal energy transmission from one grain to others is reduced. Here we describe the design and analysis of these new materials that offer substantial improvements in thermoelectric performance.

  12. Growth of metal and semiconductor nanostructures using localized photocatalysts

    SciTech Connect

    Shelnutt, John A.; Wang, Zhongchun; Medforth, Craig J.

    2006-03-08

    Our overall goal has been to understand and develop a light-driven approach to the controlled growth of novel metal and semiconductor nanostructures and nanomaterials. In this photochemical process, bio-inspired porphyrin-based photocatalysts reduce metal salts in aqueous solutions at ambient temperatures when exposed to visible light, providing metal nucleation and growth centers. The photocatalyst molecules are pre-positioned at the nanoscale to control the location of the deposition of metal and therefore the morphology of the nanostructures that are grown. Self-assembly, chemical confinement, and molecular templating are some of the methods we are using for nanoscale positioning of the photocatalyst molecules. When exposed to light, each photocatalyst molecule repeatedly reduces metal ions from solution, leading to deposition near the photocatalyst and ultimately the synthesis of new metallic nanostructures and nanostructured materials. Studies of the photocatalytic growth process and the resulting nanostructures address a number of fundamental biological, chemical, and environmental issues and draw on the combined nanoscience characterization and multi-scale simulation capabilities of the new DOE Center for Integrated Nanotechnologies at Sandia National Laboratories and the University of Georgia. Our main goals are to elucidate the processes involved in the photocatalytic growth of metal nanomaterials and provide the scientific basis for controlled nanosynthesis. The nanomaterials resulting from these studies have applications in nanoelectronics, photonics, sensors, catalysis, and micromechanical systems. Our specific goals for the past three years have been to understand the role of photocatalysis in the synthesis of dendritic metal (Pt, Pd, Au) nanostructures grown from aqueous surfactant solutions under ambient conditions and the synthesis of photocatalytic porphyrin nanostructures (e.g., nanotubes) as templates for fabrication of photo-active metal

  13. The MSFC complementary metal oxide semiconductor (including multilevel interconnect metallization) process handbook

    NASA Technical Reports Server (NTRS)

    Bouldin, D. L.; Eastes, R. W.; Feltner, W. R.; Hollis, B. R.; Routh, D. E.

    1979-01-01

    The fabrication techniques for creation of complementary metal oxide semiconductor integrated circuits at George C. Marshall Space Flight Center are described. Examples of C-MOS integrated circuits manufactured at MSFC are presented with functional descriptions of each. Typical electrical characteristics of both p-channel metal oxide semiconductor and n-channel metal oxide semiconductor discrete devices under given conditions are provided. Procedures design, mask making, packaging, and testing are included.

  14. Thin Semiconductor/Metal Films For Infrared Devices

    NASA Technical Reports Server (NTRS)

    Lamb, James L.; Nagendra, Channamallappa L.

    1995-01-01

    Spectral responses of absorbers and reflectors tailored. Thin cermet films composites of metals and semiconductors undergoing development for use as broadband infrared reflectors and absorbers. Development extends concepts of semiconductor and dielectric films used as interference filters for infrared light and visible light. Composite films offer advantages over semiconductor films. Addition of metal particles contributes additional thermal conductivity, reducing thermal gradients and associated thermal stresses, with resultant enhancements of thermal stability. Because values of n in composite films made large, same optical effects achieved with lesser thicknesses. By decreasing thicknesses of films, one not only decreases weights but also contributes further to reductions of thermal stresses.

  15. Metal Organic-Chemical Vapor Deposition fabrication of semiconductor lasers

    NASA Astrophysics Data System (ADS)

    Thomas, C.

    1980-08-01

    The metal organic chemical vapor deposition (MO-CVD) process was studied and implemented in detail. Single crystal GaAs, and Ga(x)Al(1-x)As films were grown on GaAs by depositing metal organic alkyl gallium compounds in the presence of an arsine mixture. The metal organic chemical vapor deposition process allowed formation of the semiconductor compound directly on the heated substrate in only one hot temperature zone. With MO-CVD, semiconductor films can be efficiently produced by a more economical, less complicated process which will lend itself more easily than past fabrication procedures, to high quantity, high quality reproduction techniques of semiconductor lasers. Clearly MO-CVD is of interest to the communication industry where semiconductor lasers are used extensively in fiber optic communication systems, and similarly to the solar energy business where GaAs substrates are used as photoelectric cells.

  16. Hybrid Semiconductor Nanowire-Metallic Yagi-Uda Antennas.

    PubMed

    Ramezani, Mohammad; Casadei, Alberto; Grzela, Grzegorz; Matteini, Federico; Tütüncüoglu, Gözde; Rüffer, Daniel; Fontcuberta i Morral, Anna; Gómez Rivas, Jaime

    2015-08-12

    We demonstrate the directional emission of individual GaAs nanowires by coupling this emission to Yagi-Uda optical antennas. In particular, we have replaced the resonant metallic feed element of the nanoantenna by an individual nanowire and measured with the microscope the photoluminescence of the hybrid structure as a function of the emission angle by imaging the back focal plane of the objective. The precise tuning of the dimensions of the metallic elements of the nanoantenna leads to a strong variation of the directionality of the emission, being able to change this emission from backward to forward. We explain the mechanism leading to this directional emission by finite difference time domain simulations of the scattering efficiency of the antenna elements. These results cast the first step toward the realization of electrically driven optical Yagi-Uda antenna emitters based on semiconductors nanowires.

  17. Transition-Metal Substitution Doping in Synthetic Atomically Thin Semiconductors

    SciTech Connect

    Gao, Jian; Kim, Young Duck; Liang, Liangbo; Idrobo, Juan Carlos; Chow, Phil; Tan, Jiawei; Li, Baichang; Li, Lu; Sumpter, Bobby G.; Lu, Toh-Ming; Meunier, Vincent; Hone, James; Koratkar, Nikhil

    2016-09-20

    Semiconductor impurity doping has enabled an entire generation of technology. The emergence of alternative semiconductor material systems, such as transition metal dichalcogenides (TMDCs), requires the development of scalable doping strategies. We report an unprecedented one-pot synthesis for transition-metal substitution in large-area, synthetic monolayer TMDCs. Electron microscopy, optical and electronic transport characterization and ab initio calculations indicate that our doping strategy preserves the attractive qualities of TMDC monolayers, including semiconducting transport and strong direct-gap luminescence. These results are expected to encourage exploration of transition-metal substitution in two-dimensional systems, potentially enabling next-generation optoelectronic technology in the atomically-thin regime.

  18. Integrated photo-responsive metal oxide semiconductor circuit

    NASA Technical Reports Server (NTRS)

    Jhabvala, Murzban D. (Inventor); Dargo, David R. (Inventor); Lyons, John C. (Inventor)

    1987-01-01

    An infrared photoresponsive element (RD) is monolithically integrated into a source follower circuit of a metal oxide semiconductor device by depositing a layer of a lead chalcogenide as a photoresistive element forming an ohmic bridge between two metallization strips serving as electrodes of the circuit. Voltage from the circuit varies in response to illumination of the layer by infrared radiation.

  19. Metal-doped semiconductor nanoparticles and methods of synthesis thereof

    DOEpatents

    Ren, Zhifeng; Chen, Gang; Poudel, Bed; Kumar, Shankar; Wang, Wenzhong; Dresselhaus, Mildred

    2009-09-08

    The present invention generally relates to binary or higher order semiconductor nanoparticles doped with a metallic element, and thermoelectric compositions incorporating such nanoparticles. In one aspect, the present invention provides a thermoelectric composition comprising a plurality of nanoparticles each of which includes an alloy matrix formed of a Group IV element and Group VI element and a metallic dopant distributed within the matrix.

  20. Metal-Semiconductor Nanocomposites for High Efficiency Thermoelectric Power Generation

    DTIC Science & Technology

    2013-12-07

    the modified phonon and alloy scattering parameters in the modeling to explain the thermoelectric properties of this material. For example, we...near future. 2. Cross-plane thermoelectric properties of perovskite oxide metal/semiconductor superlattices ( Purdue /UCSC) The cross-plane...It therefore became critical that Purdue optimize this characterization technique to extract material properties which show the potential of metal

  1. Metal-doped semiconductor nanoparticles and methods of synthesis thereof

    NASA Technical Reports Server (NTRS)

    Ren, Zhifeng (Inventor); Chen, Gang (Inventor); Poudel, Bed (Inventor); Kumar, Shankar (Inventor); Wang, Wenzhong (Inventor); Dresselhaus, Mildred (Inventor)

    2009-01-01

    The present invention generally relates to binary or higher order semiconductor nanoparticles doped with a metallic element, and thermoelectric compositions incorporating such nanoparticles. In one aspect, the present invention provides a thermoelectric composition comprising a plurality of nanoparticles each of which includes an alloy matrix formed of a Group IV element and Group VI element and a metallic dopant distributed within the matrix.

  2. A silicon metal-semiconductor-metal photodetector macromodel for circuit simulations

    NASA Astrophysics Data System (ADS)

    Pancheri, Lucio; Scandiuzzo, Mauro; Betta, Gian-Franco Dalla; Stoppa, David; Nisi, Fabrizio De; Gonzo, Lorenzo; Simoni, Andrea

    2005-02-01

    In this paper, numerical device simulations are used to get insight into the DC and dynamic behavior of a CMOS metal-semiconductor-metal photodetector, to be used as a mixing device for active pixels based on a differential read-out concept. On the basis of simulation results, a simple electrical macromodel of the photosensor has been defined and implemented in the Cadence package using Spectre AHDL. The proposed macromodel is shown to accurately reproduce the numerical device simulation predictions in all the considered operation modes.

  3. Performance optimization of a free space optical interconnect system with a metal-semiconductor-metal detector

    NASA Astrophysics Data System (ADS)

    Al-Ababneh, Nedal; Khader, Ateka

    2011-08-01

    In this paper we study the possibility and the potentiality of using metal semiconductor-metal photodetector (MSM-PD) in three-dimensional parallel free space optical interconnect (FSOI) systems. The signal-to-noise ratio (SNR) and time response are used as performance measures to optimize the geometry of MSM-PD used in FSOI systems. Both SNR and time response are evaluated, analyzed, and their dependence on feature parameters of the MSM-PD, including finger size, spacing, and number of fingers, are considered. Based on the results obtained, we show that the use of MSM-PD in FSOI improves the interconnect speed at a given acceptable SNR.

  4. Modeling of wide-area thin-film metal-semiconductor-metal photodetectors for LIDAR applications

    NASA Astrophysics Data System (ADS)

    Glinz, Andreas P.; Morrison, Charles B.; Zhu, Zheng

    1998-07-01

    We report calculations of the collection current of interdigitated InGaAs metal-semiconductor-metal photodetectors. We show how interdigital spacing and thickness of the semiconductor layer influence the collection current. Both front and back illumination of devices carried on thin film membranes by means of epitaxial liftoff are examined.

  5. Gate-control efficiency and interface state density evaluated from capacitance-frequency-temperature mapping for GaN-based metal-insulator-semiconductor devices

    SciTech Connect

    Shih, Hong-An; Kudo, Masahiro; Suzuki, Toshi-kazu

    2014-11-14

    We present an analysis method for GaN-based metal-insulator-semiconductor (MIS) devices by using capacitance-frequency-temperature (C-f-T) mapping to evaluate the gate-control efficiency and the interface state density, both exhibiting correlations with the linear-region intrinsic transconductance. The effectiveness of the method was exemplified by application to AlN/AlGaN/GaN MIS devices to elucidate the properties of AlN-AlGaN interfaces depending on their formation processes. Using the C-f-T mapping, we extract the gate-bias-dependent activation energy with its derivative giving the gate-control efficiency, from which we evaluate the AlN-AlGaN interface state density through the Lehovec equivalent circuit in the DC limit. It is shown that the gate-control efficiency and the interface state density have correlations with the linear-region intrinsic transconductance, all depending on the interface formation processes. In addition, we give characterization of the AlN-AlGaN interfaces by using X-ray photoelectron spectroscopy, in relation with the results of the analysis.

  6. Note: A disposable x-ray camera based on mass produced complementary metal-oxide-semiconductor sensors and single-board computers

    NASA Astrophysics Data System (ADS)

    Hoidn, Oliver R.; Seidler, Gerald T.

    2015-08-01

    We have integrated mass-produced commercial complementary metal-oxide-semiconductor (CMOS) image sensors and off-the-shelf single-board computers into an x-ray camera platform optimized for acquisition of x-ray spectra and radiographs at energies of 2-6 keV. The CMOS sensor and single-board computer are complemented by custom mounting and interface hardware that can be easily acquired from rapid prototyping services. For single-pixel detection events, i.e., events where the deposited energy from one photon is substantially localized in a single pixel, we establish ˜20% quantum efficiency at 2.6 keV with ˜190 eV resolution and a 100 kHz maximum detection rate. The detector platform's useful intrinsic energy resolution, 5-μm pixel size, ease of use, and obvious potential for parallelization make it a promising candidate for many applications at synchrotron facilities, in laser-heating plasma physics studies, and in laboratory-based x-ray spectrometry.

  7. Three-Dimensional Flexible Complementary Metal-Oxide-Semiconductor Logic Circuits Based On Two-Layer Stacks of Single-Walled Carbon Nanotube Networks.

    PubMed

    Zhao, Yudan; Li, Qunqing; Xiao, Xiaoyang; Li, Guanhong; Jin, Yuanhao; Jiang, Kaili; Wang, Jiaping; Fan, Shoushan

    2016-02-23

    We have proposed and fabricated stable and repeatable, flexible, single-walled carbon nanotube (SWCNT) thin film transistor (TFT) complementary metal-oxide-semiconductor (CMOS) integrated circuits based on a three-dimensional (3D) structure. Two layers of SWCNT-TFT devices were stacked, where one layer served as n-type devices and the other one served as p-type devices. On the basis of this method, it is able to save at least half of the area required to construct an inverter and make large-scale and high-density integrated CMOS circuits easier to design and manufacture. The 3D flexible CMOS inverter gain can be as high as 40, and the total noise margin is more than 95%. Moreover, the input and output voltage of the inverter are exactly matched for cascading. 3D flexible CMOS NOR, NAND logic gates, and 15-stage ring oscillators were fabricated on PI substrates with high performance as well. Stable electrical properties of these circuits can be obtained with bending radii as small as 3.16 mm, which shows that such a 3D structure is a reliable architecture and suitable for carbon nanotube electrical applications in complex flexible and wearable electronic devices.

  8. Note: A disposable x-ray camera based on mass produced complementary metal-oxide-semiconductor sensors and single-board computers.

    PubMed

    Hoidn, Oliver R; Seidler, Gerald T

    2015-08-01

    We have integrated mass-produced commercial complementary metal-oxide-semiconductor (CMOS) image sensors and off-the-shelf single-board computers into an x-ray camera platform optimized for acquisition of x-ray spectra and radiographs at energies of 2-6 keV. The CMOS sensor and single-board computer are complemented by custom mounting and interface hardware that can be easily acquired from rapid prototyping services. For single-pixel detection events, i.e., events where the deposited energy from one photon is substantially localized in a single pixel, we establish ∼20% quantum efficiency at 2.6 keV with ∼190 eV resolution and a 100 kHz maximum detection rate. The detector platform's useful intrinsic energy resolution, 5-μm pixel size, ease of use, and obvious potential for parallelization make it a promising candidate for many applications at synchrotron facilities, in laser-heating plasma physics studies, and in laboratory-based x-ray spectrometry.

  9. Note: A disposable x-ray camera based on mass produced complementary metal-oxide-semiconductor sensors and single-board computers

    SciTech Connect

    Hoidn, Oliver R.; Seidler, Gerald T.

    2015-08-15

    We have integrated mass-produced commercial complementary metal-oxide-semiconductor (CMOS) image sensors and off-the-shelf single-board computers into an x-ray camera platform optimized for acquisition of x-ray spectra and radiographs at energies of 2–6 keV. The CMOS sensor and single-board computer are complemented by custom mounting and interface hardware that can be easily acquired from rapid prototyping services. For single-pixel detection events, i.e., events where the deposited energy from one photon is substantially localized in a single pixel, we establish ∼20% quantum efficiency at 2.6 keV with ∼190 eV resolution and a 100 kHz maximum detection rate. The detector platform’s useful intrinsic energy resolution, 5-μm pixel size, ease of use, and obvious potential for parallelization make it a promising candidate for many applications at synchrotron facilities, in laser-heating plasma physics studies, and in laboratory-based x-ray spectrometry.

  10. a Study of Some Metal-Semiconductor Interfaces.

    NASA Astrophysics Data System (ADS)

    Maani, Colette

    Available from UMI in association with The British Library. The aim of this study was to investigate a number of specific metal-semiconductor interfaces with the goal of understanding the mechanism responsible for Schottky barrier formation at these interfaces. Metal contacts of group III, gallium, and group V, antimony were evaporated onto the clean cleaved indium phosphide(110) surface. Techniques of low energy electron defraction, Auger electron spectroscopy, ultra violet and X-ray photoelectric spectroscopy, current-voltage and capacitance -voltage measurements were used to probe the structural, chemical and electronic nature of the metal-semiconductor interfaces formed. In addition metal contacts of Al, Ag, Au and Sn were evaporated onto the clean cleaved gallium phosphide(110) surface. Techniques of current-voltage, capacitance-voltage and photoresponse measurements were used in order to determine barrier height. The study of Ga and Sb on InP(110) was used to investigate the importance of chemical reactivity, growth mode, defect formation and interdiffusion at the interface. The investigation of a range of metals on GaP(110) was an attempt to understand metal-semiconductor Schottky barrier formation in terms of this wide band gap material. Both studies were used to test the relevance of various proposed models of Schottky barrier formation at metal-semiconductor interfaces. (Abstract shortened by UMI.).

  11. A room-temperature magnetic semiconductor from a ferromagnetic metallic glass

    NASA Astrophysics Data System (ADS)

    Liu, Wenjian; Zhang, Hongxia; Shi, Jin-An; Wang, Zhongchang; Song, Cheng; Wang, Xiangrong; Lu, Siyuan; Zhou, Xiangjun; Gu, Lin; Louzguine-Luzgin, Dmitri V.; Chen, Mingwei; Yao, Kefu; Chen, Na

    2016-12-01

    Emerging for future spintronic/electronic applications, magnetic semiconductors have stimulated intense interest due to their promises for new functionalities and device concepts. So far, the so-called diluted magnetic semiconductors attract many attentions, yet it remains challenging to increase their Curie temperatures above room temperature, particularly those based on III-V semiconductors. In contrast to the concept of doping magnetic elements into conventional semiconductors to make diluted magnetic semiconductors, here we propose to oxidize originally ferromagnetic metals/alloys to form new species of magnetic semiconductors. We introduce oxygen into a ferromagnetic metallic glass to form a Co28.6Fe12.4Ta4.3B8.7O46 magnetic semiconductor with a Curie temperature above 600 K. The demonstration of p-n heterojunctions and electric field control of the room-temperature ferromagnetism in this material reflects its p-type semiconducting character, with a mobility of 0.1 cm2 V-1 s-1. Our findings may pave a new way to realize high Curie temperature magnetic semiconductors with unusual multifunctionalities.

  12. A room-temperature magnetic semiconductor from a ferromagnetic metallic glass

    PubMed Central

    Liu, Wenjian; Zhang, Hongxia; Shi, Jin-an; Wang, Zhongchang; Song, Cheng; Wang, Xiangrong; Lu, Siyuan; Zhou, Xiangjun; Gu, Lin; Louzguine-Luzgin, Dmitri V.; Chen, Mingwei; Yao, Kefu; Chen, Na

    2016-01-01

    Emerging for future spintronic/electronic applications, magnetic semiconductors have stimulated intense interest due to their promises for new functionalities and device concepts. So far, the so-called diluted magnetic semiconductors attract many attentions, yet it remains challenging to increase their Curie temperatures above room temperature, particularly those based on III–V semiconductors. In contrast to the concept of doping magnetic elements into conventional semiconductors to make diluted magnetic semiconductors, here we propose to oxidize originally ferromagnetic metals/alloys to form new species of magnetic semiconductors. We introduce oxygen into a ferromagnetic metallic glass to form a Co28.6Fe12.4Ta4.3B8.7O46 magnetic semiconductor with a Curie temperature above 600 K. The demonstration of p–n heterojunctions and electric field control of the room-temperature ferromagnetism in this material reflects its p-type semiconducting character, with a mobility of 0.1 cm2 V−1 s−1. Our findings may pave a new way to realize high Curie temperature magnetic semiconductors with unusual multifunctionalities. PMID:27929059

  13. Effect of Remote Oxygen Scavenging on Electrical Properties of Ge-Based Metal-Oxide-Semiconductor Capacitors

    NASA Astrophysics Data System (ADS)

    Fadida, Sivan; Nyns, Laura; Van Elshocht, Sven; Eizenberg, Moshe

    2017-01-01

    Remote oxygen scavenging has been studied in a metal/high- k dielectric/GeO2/Ge stack, where a thin Ti layer inserted into the metal/high- k dielectric interface serves as the scavenger. First, we established that remote oxygen scavenging indeed occurs specifically in the studied HfO2/Al2O3/GeO2/Ge stack. It was also established that the source for oxygen is decomposition of the GeO2 layer. Then, the effect of remote oxygen scavenging of the GeO2 layer on the electrical characteristics of the metal/oxide/Ge capacitors was investigated. The electrical properties were studied in comparison with identical gate stacks with a Pt electrode, before and after annealing. Although a decrease in effective oxide thickness was demonstrated as a result of this process, clear degradation of the interface electrical quality was observed after scavenging. Initiation of the scavenging process was witnessed upon deposition of Ti at room temperature, emphasizing that this process could not be controlled.

  14. High temperature behavior of multi-region direct current current-voltage spectroscopy and relationship with shallow-trench-isolation-based high-voltage laterally diffused metal-oxide-semiconductor field-effect-transistors reliability

    NASA Astrophysics Data System (ADS)

    He, Yandong; Zhang, Ganggang; Zhang, Xing

    2014-01-01

    With the process compatibility with the mainstream standard complementary metal-oxide-semiconductor (CMOS), shallow trench isolation (STI) based laterally diffused metal-oxide-semiconductor (LDMOS) devices have become popular for its better tradeoff between breakdown voltage and performance, especially for smart power applications. A multi-region direct current current-voltage (MR-DCIV) technique with spectroscopic features was demonstrated to map the interface state generation in the channel, accumulation and STI drift regions. High temperature behavior of MR-DCIV spectroscopy was analyzed and a physical model was verified. Degradation of STI-based LDMOS transistors under high temperature reverse bias (HTRB) stress is experimentally studied by MR-DCIV spectroscopy. The impact of interface state location on device electrical characteristics was investigated. Our results show that the major contribution to HTRB degradation, in term of the on-resistance degradation, was attributed to interface state generation under STI drift region.

  15. Spin-dependent transport properties of a GaMnAs-based vertical spin metal-oxide-semiconductor field-effect transistor structure

    SciTech Connect

    Kanaki, Toshiki Asahara, Hirokatsu; Ohya, Shinobu Tanaka, Masaaki

    2015-12-14

    We fabricate a vertical spin metal-oxide-semiconductor field-effect transistor (spin-MOSFET) structure, which is composed of an epitaxial single-crystal heterostructure with a ferromagnetic-semiconductor GaMnAs source/drain, and investigate its spin-dependent transport properties. We modulate the drain-source current I{sub DS} by ∼±0.5% with a gate-source voltage of ±10.8 V and also modulate I{sub DS} by up to 60% with changing the magnetization configuration of the GaMnAs source/drain at 3.5 K. The magnetoresistance ratio is more than two orders of magnitude higher than that obtained in the previous studies on spin MOSFETs. Our result shows that a vertical structure is one of the hopeful candidates for spin MOSFET when the device size is reduced to a sub-micron or nanometer scale.

  16. Valorization of GaN based metal-organic chemical vapor deposition dust a semiconductor power device industry waste through mechanochemical oxidation and leaching: A sustainable green process

    SciTech Connect

    Swain, Basudev; Mishra, Chinmayee; Lee, Chan Gi; Park, Kyung-Soo; Lee, Kun-Jae

    2015-07-15

    Dust generated during metal organic vapor deposition (MOCVD) process of GaN based semiconductor power device industry contains significant amounts of gallium and indium. These semiconductor power device industry wastes contain gallium as GaN and Ga{sub 0.97}N{sub 0.9}O{sub 0.09} is a concern for the environment which can add value through recycling. In the present study, this waste is recycled through mechanochemical oxidation and leaching. For quantitative recovery of gallium, two different mechanochemical oxidation leaching process flow sheets are proposed. In one process, first the Ga{sub 0.97}N{sub 0.9}O{sub 0.09} of the MOCVD dust is leached at the optimum condition. Subsequently, the leach residue is mechanochemically treated, followed by oxidative annealing and finally re-leached. In the second process, the MOCVD waste dust is mechanochemically treated, followed by oxidative annealing and finally leached. Both of these treatment processes are competitive with each other, appropriate for gallium leaching and treatment of the waste MOCVD dust. Without mechanochemical oxidation, 40.11 and 1.86 w/w% of gallium and Indium are leached using 4 M HCl, 100 °C and pulp density of 100 kg/m{sup 3,} respectively. After mechanochemical oxidation, both these processes achieved 90 w/w% of gallium and 1.86 w/w% of indium leaching at their optimum condition. - Highlights: • Waste MOCVD dust is treated through mechanochemical leaching. • GaN is hardly leached, and converted to NaGaO{sub 2} through ball milling and annealing. • Process for gallium recovery from waste MOCVD dust has been developed. • Thermal analysis and phase properties of GaN to Ga{sub 2}O{sub 3} and GaN to NaGaO{sub 2} is revealed. • Solid-state chemistry involved in this process is reported.

  17. Nonlinear optical susceptibilities of semiconductor quantum dot - metal nanoparticle hybrids

    NASA Astrophysics Data System (ADS)

    Terzis, A. F.; Kosionis, S. G.; Boviatsis, J.; Paspalakis, E.

    2016-03-01

    We theoretically study nonlinear optical effects of a semiconductor quantum dot and a spherical metal nanoparticle coupled via long-range Coulomb interaction. We solve the relevant density matrix equations in steady state and use proper perturbation theory to obtain closed-form analytical expressions for the nonlinear susceptibilities of the quantum dot, the metal nanoparticle, and the entire coupled system, up to fifth order. We also investigate the influence of the material of the semiconductor and the impact of the interparticle distance on the form of the spectra of the nonlinear susceptibilities.

  18. Modeling of Metal-Ferroelectric-Semiconductor Field Effect Transistors

    NASA Technical Reports Server (NTRS)

    Duen Ho, Fat; Macleod, Todd C.

    1998-01-01

    The characteristics for a MFSFET (metal-ferroelectric-semiconductor field effect transistor) is very different than a conventional MOSFET and must be modeled differently. The drain current has a hysteresis shape with respect to the gate voltage. The position along the hysteresis curve is dependent on the last positive or negative polling of the ferroelectric material. The drain current also has a logarithmic decay after the last polling. A model has been developed to describe the MFSFET drain current for both gate voltage on and gate voltage off conditions. This model takes into account the hysteresis nature of the MFSFET and the time dependent decay. The model is based on the shape of the Fermi-Dirac function which has been modified to describe the MFSFET's drain current. This is different from the model proposed by Chen et. al. and that by Wu.

  19. Ultrafast photoinduced charge separation in metal-semiconductor nanohybrids.

    PubMed

    Mongin, Denis; Shaviv, Ehud; Maioli, Paolo; Crut, Aurélien; Banin, Uri; Del Fatti, Natalia; Vallée, Fabrice

    2012-08-28

    Hybrid nano-objects formed by two or more disparate materials are among the most promising and versatile nanosystems. A key parameter in their properties is interaction between their components. In this context we have investigated ultrafast charge separation in semiconductor-metal nanohybrids using a model system of gold-tipped CdS nanorods in a matchstick architecture. Experiments are performed using an optical time-resolved pump-probe technique, exciting either the semiconductor or the metal component of the particles, and probing the light-induced change of their optical response. Electron-hole pairs photoexcited in the semiconductor part of the nanohybrids are shown to undergo rapid charge separation with the electron transferred to the metal part on a sub-20 fs time scale. This ultrafast gold charging leads to a transient red-shift and broadening of the metal surface plasmon resonance, in agreement with results for free clusters but in contrast to observation for static charging of gold nanoparticles in liquid environments. Quantitative comparison with a theoretical model is in excellent agreement with the experimental results, confirming photoexcitation of one electron-hole pair per nanohybrid followed by ultrafast charge separation. The results also point to the utilization of such metal-semiconductor nanohybrids in light-harvesting applications and in photocatalysis.

  20. Absorption properties of metal-semiconductor hybrid nanoparticles.

    PubMed

    Shaviv, Ehud; Schubert, Olaf; Alves-Santos, Marcelo; Goldoni, Guido; Di Felice, Rosa; Vallée, Fabrice; Del Fatti, Natalia; Banin, Uri; Sönnichsen, Carsten

    2011-06-28

    The optical response of hybrid metal-semiconductor nanoparticles exhibits different behaviors due to the proximity between the disparate materials. For some hybrid systems, such as CdS-Au matchstick-shaped hybrids, the particles essentially retain the optical properties of their original components, with minor changes. Other systems, such as CdSe-Au dumbbell-shaped nanoparticles, exhibit significant change in the optical properties due to strong coupling between the two materials. Here, we study the absorption of these hybrids by comparing experimental results with simulations using the discrete dipole approximation method (DDA) employing dielectric functions of the bare components as inputs. For CdS-Au nanoparticles, the DDA simulation provides insights on the gold tip shape and its interface with the semiconductor, information that is difficult to acquire by experimental means alone. Furthermore, the qualitative agreement between DDA simulations and experimental data for CdS-Au implies that most effects influencing the absorption of this hybrid system are well described by local dielectric functions obtained separately for bare gold and CdS nanoparticles. For dumbbell shaped CdSe-Au, we find a shortcoming of the electrodynamic model, as it does not predict the "washing out" of the optical features of the semiconductor and the metal observed experimentally. The difference between experiment and theory is ascribed to strong interaction of the metal and semiconductor excitations, which spectrally overlap in the CdSe case. The present study exemplifies the employment of theoretical approaches used to describe the optical properties of semiconductors and metal nanoparticles, to achieve better understanding of the behavior of metal-semiconductor hybrid nanoparticles.

  1. Plasmonic nanostructured metal-oxide-semiconductor reflection modulators.

    PubMed

    Olivieri, Anthony; Chen, Chengkun; Hassan, Sa'ad; Lisicka-Skrzek, Ewa; Tait, R Niall; Berini, Pierre

    2015-04-08

    We propose a plasmonic surface that produces an electrically controlled reflectance as a high-speed intensity modulator. The device is conceived as a metal-oxide-semiconductor capacitor on silicon with its metal structured as a thin patch bearing a contiguous nanoscale grating. The metal structure serves multiple functions as a driving electrode and as a grating coupler for perpendicularly incident p-polarized light to surface plasmons supported by the patch. Modulation is produced by charging and discharging the capacitor and exploiting the carrier refraction effect in silicon along with the high sensitivity of strongly confined surface plasmons to index perturbations. The area of the modulator is set by the area of the incident beam, leading to a very compact device for a strongly focused beam (∼2.5 μm in diameter). Theoretically, the modulator can operate over a broad electrical bandwidth (tens of gigahertz) with a modulation depth of 3 to 6%, a loss of 3 to 4 dB, and an optical bandwidth of about 50 nm. About 1000 modulators can be integrated over a 50 mm(2) area producing an aggregate electro-optic modulation rate in excess of 1 Tb/s. We demonstrate experimentally modulators operating at telecommunications wavelengths, fabricated as nanostructured Au/HfO2/p-Si capacitors. The modulators break conceptually from waveguide-based devices and belong to the same class of devices as surface photodetectors and vertical cavity surface-emitting lasers.

  2. Solution-phase synthesis of metal and/or semiconductor homojunction/heterojunction nanomaterials.

    PubMed

    Feng, Xiumei; Hu, Guanqi; Hu, Jianqiang

    2011-05-01

    The design and architecture of programmable metal-semiconductor nanostructures with excellent optoelectronic properties from metal and semiconductor building blocks with nanoscale dimensions have been a key aim of material scientists due to their central roles in the fabrication of electronic, optical, and optoelectronic nanodevices. This review focuses on the latest advances in the solution-phase synthesis of metal and/or semiconductor homojunction/heterojunction nanomaterials. It begins with the simplest construction of metal/metal and semiconductor/semiconductor homojunctions, and then highlights the synthetic design of metal/metal and semiconductor/semiconductor heterojunction nanostructures with different building blocks. Special emphasis is placed on metal/semiconductor heterojunction nanomaterials, which are the most challenging and promising nanomaterials for future applications in optoelectronic nanodevices. Finally, this review concludes with personal perspectives on the directions for future research in this field.

  3. Metal/Semiconductor hybrid nanostructures for plasmon-enhanced applications.

    PubMed

    Jiang, Ruibin; Li, Benxia; Fang, Caihong; Wang, Jianfang

    2014-08-20

    Hybrid nanostructures composed of semiconductor and plasmonic metal components are receiving extensive attention. They display extraordinary optical characteristics that are derived from the simultaneous existence and close conjunction of localized surface plasmon resonance and semiconduction, as well as the synergistic interactions between the two components. They have been widely studied for photocatalysis, plasmon-enhanced spectroscopy, biotechnology, and solar cells. In this review, the developments in the field of (plasmonic metal)/semiconductor hybrid nanostructures are comprehensively described. The preparation of the hybrid nanostructures is first presented according to the semiconductor type, as well as the nanostructure morphology. The plasmonic properties and the enabled applications of the hybrid nanostructures are then elucidated. Lastly, possible future research in this burgeoning field is discussed.

  4. Positron studies of metal-oxide-semiconductor structures

    SciTech Connect

    Au, H.L.; Asoka-Kumar, P.; Nielsen, B.; Lynn, K.G. )

    1993-03-15

    Positron annihilation spectroscopy provides a new probe to study the properties of interface traps in metal-oxide semiconductors (MOS). Using positrons, we have examined the behavior of the interface traps as a function of gate bias. We propose a simple model to explain the positron annihilation spectra from the interface region of a MOS capacitor.

  5. High-temperature Complementary Metal Oxide Semiconductors (CMOS)

    NASA Technical Reports Server (NTRS)

    Mcbrayer, J. D.

    1981-01-01

    The results of an investigation into the possibility of using complementary metal oxide semiconductor (CMOS) technology for high temperature electronics are presented. A CMOS test chip was specifically developed as the test bed. This test chip incorporates CMOS transistors that have no gate protection diodes; these diodes are the major cause of leakage in commercial devices.

  6. Abrupt Depletion Layer Approximation for the Metal Insulator Semiconductor Diode.

    ERIC Educational Resources Information Center

    Jones, Kenneth

    1979-01-01

    Determines the excess surface change carrier density, surface potential, and relative capacitance of a metal insulator semiconductor diode as a function of the gate voltage, using the precise questions and the equations derived with the abrupt depletion layer approximation. (Author/GA)

  7. Nanodiamond-based nanostructures for coupling nitrogen-vacancy centres to metal nanoparticles and semiconductor quantum dots

    NASA Astrophysics Data System (ADS)

    Gong, Jianxiao; Steinsultz, Nat; Ouyang, Min

    2016-06-01

    The ability to control the interaction between nitrogen-vacancy centres in diamond and photonic and/or broadband plasmonic nanostructures is crucial for the development of solid-state quantum devices with optimum performance. However, existing methods typically employ top-down fabrication, which restrict scalable and feasible manipulation of nitrogen-vacancy centres. Here, we develop a general bottom-up approach to fabricate an emerging class of freestanding nanodiamond-based hybrid nanostructures with external functional units of either plasmonic nanoparticles or excitonic quantum dots. Precise control of the structural parameters (including size, composition, coverage and spacing of the external functional units) is achieved, representing a pre-requisite for exploring the underlying physics. Fine tuning of the emission characteristics through structural regulation is demonstrated by performing single-particle optical studies. This study opens a rich toolbox to tailor properties of quantum emitters, which can facilitate design guidelines for devices based on nitrogen-vacancy centres that use these freestanding hybrid nanostructures as building blocks.

  8. Nanodiamond-based nanostructures for coupling nitrogen-vacancy centres to metal nanoparticles and semiconductor quantum dots

    SciTech Connect

    Gong, Jianxiao; Steinsultz, Nat; Ouyang, Min

    2016-06-08

    The ability to control the interaction between nitrogen-vacancy centres in diamond and photonic and/or broadband plasmonic nanostructures is crucial for the development of solid-state quantum devices with optimum performance. However, existing methods typically employ top-down fabrication, which restrict scalable and feasible manipulation of nitrogen-vacancy centres. Here, we develop a general bottom-up approach to fabricate an emerging class of freestanding nanodiamond-based hybrid nanostructures with external functional units of either plasmonic nanoparticles or excitonic quantum dots. Precise control of the structural parameters ( including size, composition, coverage and spacing of the external functional units) is achieved, representing a pre-requisite for exploring the underlying physics. Fine tuning of the emission characteristics through structural regulation is demonstrated by performing single-particle optical studies. Lastly, this study opens a rich toolbox to tailor properties of quantum emitters, which can facilitate design guidelines for devices based on nitrogen vacancy centres that use these freestanding hybrid nanostructures as building blocks.

  9. Nanodiamond-based nanostructures for coupling nitrogen-vacancy centres to metal nanoparticles and semiconductor quantum dots

    DOE PAGES

    Gong, Jianxiao; Steinsultz, Nat; Ouyang, Min

    2016-06-08

    The ability to control the interaction between nitrogen-vacancy centres in diamond and photonic and/or broadband plasmonic nanostructures is crucial for the development of solid-state quantum devices with optimum performance. However, existing methods typically employ top-down fabrication, which restrict scalable and feasible manipulation of nitrogen-vacancy centres. Here, we develop a general bottom-up approach to fabricate an emerging class of freestanding nanodiamond-based hybrid nanostructures with external functional units of either plasmonic nanoparticles or excitonic quantum dots. Precise control of the structural parameters ( including size, composition, coverage and spacing of the external functional units) is achieved, representing a pre-requisite for exploring themore » underlying physics. Fine tuning of the emission characteristics through structural regulation is demonstrated by performing single-particle optical studies. Lastly, this study opens a rich toolbox to tailor properties of quantum emitters, which can facilitate design guidelines for devices based on nitrogen vacancy centres that use these freestanding hybrid nanostructures as building blocks.« less

  10. Trapping in GaN-based metal-insulator-semiconductor transistors: Role of high drain bias and hot electrons

    SciTech Connect

    Meneghini, M. Bisi, D.; Meneghesso, G.; Zanoni, E.

    2014-04-07

    This paper describes an extensive analysis of the role of off-state and semi-on state bias in inducing the trapping in GaN-based power High Electron Mobility Transistors. The study is based on combined pulsed characterization and on-resistance transient measurements. We demonstrate that—by changing the quiescent bias point from the off-state to the semi-on state—it is possible to separately analyze two relevant trapping mechanisms: (i) the trapping of electrons in the gate-drain access region, activated by the exposure to high drain bias in the off-state; (ii) the trapping of hot-electrons within the AlGaN barrier or the gate insulator, which occurs when the devices are operated in the semi-on state. The dependence of these two mechanisms on the bias conditions and on temperature, and the properties (activation energy and cross section) of the related traps are described in the text.

  11. Nanodiamond-based nanostructures for coupling nitrogen-vacancy centres to metal nanoparticles and semiconductor quantum dots

    PubMed Central

    Gong, Jianxiao; Steinsultz, Nat; Ouyang, Min

    2016-01-01

    The ability to control the interaction between nitrogen-vacancy centres in diamond and photonic and/or broadband plasmonic nanostructures is crucial for the development of solid-state quantum devices with optimum performance. However, existing methods typically employ top-down fabrication, which restrict scalable and feasible manipulation of nitrogen-vacancy centres. Here, we develop a general bottom-up approach to fabricate an emerging class of freestanding nanodiamond-based hybrid nanostructures with external functional units of either plasmonic nanoparticles or excitonic quantum dots. Precise control of the structural parameters (including size, composition, coverage and spacing of the external functional units) is achieved, representing a pre-requisite for exploring the underlying physics. Fine tuning of the emission characteristics through structural regulation is demonstrated by performing single-particle optical studies. This study opens a rich toolbox to tailor properties of quantum emitters, which can facilitate design guidelines for devices based on nitrogen-vacancy centres that use these freestanding hybrid nanostructures as building blocks. PMID:27273426

  12. High-temperature MEMS Heater Platforms: Long-term Performance of Metal and Semiconductor Heater Materials

    PubMed Central

    Spannhake, Jan; Schulz, Olaf; Helwig, Andreas; Krenkow, Angelika; Müller, Gerhard; Doll, Theodor

    2006-01-01

    Micromachined thermal heater platforms offer low electrical power consumption and high modulation speed, i.e. properties which are advantageous for realizing non-dispersive infrared (NDIR) gas- and liquid monitoring systems. In this paper, we report on investigations on silicon-on-insulator (SOI) based infrared (IR) emitter devices heated by employing different kinds of metallic and semiconductor heater materials. Our results clearly reveal the superior high-temperature performance of semiconductor over metallic heater materials. Long-term stable emitter operation in the vicinity of 1300 K could be attained using heavily antimony-doped tin dioxide (SnO2:Sb) heater elements.

  13. Characterization and stability of the interfaces between manganese-based metals and compound semiconductors grown by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Hilton, Jessica Lynn

    The interfacial interactions between MBE-grown Mn and Mn-based contacts and GaAs(001) substrates were characterized as a function of growth and post-growth annealing conditions. Mn was found to be thermodynamically unstable on GaAs with interfacial reactions initially resulting in the formation of an intermediate Mn3GaAs phase that decomposes into Mn2As and delta-MnGa. Both reacted phases are epitaxial on GaAs with Mn2As(001)<100>//GaAs(001)<110> and delta-MnGa(001)<100>//GaAs(001)<110>, and the extent of the reactions is limited by the rate of Mn diffusion through the reacted region. Further annealing results in segregation of the delta-MnGa phase to the sample surface and of the Mn2As phase to the GaAs interface. A thin film ternary phase diagram for the Mn-Ga-As system was derived with Mn2As and delta-MnGa as the thermodynamically stable phases in contact with GaAs. The extent of reactions was quantified on the atomic scale from sequential XPS measurements acquired during the growth process. For Mn growth at 95°C and below, the interfacial reaction layer reaches a maximum thickness during the initial growth stages, but at a growth temperature of 250°C the interfacial layer continues to increase in thickness as the Mn is deposited. A partial monolayer of arsenic was found to continuously segregate to the Mn surface regardless of the growth temperature. Epitaxial films of delta-MnGa were shown to be thermodynamically stable in contact with GaAs, although the structure of the first few atomic layers of the film at the GaAs interface was different from the rest of the delta-MnGa film. The films were ferromagnetic with an out-of-plane magnetization, and produced electroluminescence polarization signals of 5% in remanence when used as contacts in spin-LED devices. The ferromagnetic ternary phase alloy Co2MnGe was also grown epitaxially on GaAs. Similar to delta-MnGa, Co2MnGe was shown to be stable on GaAs yet still have a thin, distinctive interfacial layer. A

  14. Record performance of electrical injection sub-wavelength metallic-cavity semiconductor lasers at room temperature.

    PubMed

    Ding, K; Hill, M T; Liu, Z C; Yin, L J; van Veldhoven, P J; Ning, C Z

    2013-02-25

    We demonstrate a continuous wave (CW) sub-wavelength metallic-cavity semiconductor laser with electrical injection at room temperature (RT). Our metal-cavity laser with a cavity volume of 0.67λ3 (λ = 1591 nm) shows a linewidth of 0.5 nm at RT, which corresponds to a Q-value of 3182 compared to 235 of the cavity Q, the highest Q under lasing condition for RT CW operation of any sub-wavelength metallic-cavity laser. Such record performance provides convincing evidences of the feasibility of RT CW sub-wavelength metallic-cavity lasers, thus opening a wide range of practical possibilities of novel nanophotonic devices based on metal-semiconductor structures.

  15. Metal-insulator transition in films of doped semiconductor nanocrystals.

    PubMed

    Chen, Ting; Reich, K V; Kramer, Nicolaas J; Fu, Han; Kortshagen, Uwe R; Shklovskii, B I

    2016-03-01

    To fully deploy the potential of semiconductor nanocrystal films as low-cost electronic materials, a better understanding of the amount of dopants required to make their conductivity metallic is needed. In bulk semiconductors, the critical concentration of electrons at the metal-insulator transition is described by the Mott criterion. Here, we theoretically derive the critical concentration nc for films of heavily doped nanocrystals devoid of ligands at their surface and in direct contact with each other. In the accompanying experiments, we investigate the conduction mechanism in films of phosphorus-doped, ligand-free silicon nanocrystals. At the largest electron concentration achieved in our samples, which is half the predicted nc, we find that the localization length of hopping electrons is close to three times the nanocrystals diameter, indicating that the film approaches the metal-insulator transition.

  16. Boosting photoresponse in silicon metal-semiconductor-metal photodetector using semiconducting quantum dots

    PubMed Central

    Biswas, Chandan; Kim, Yonghwan; Lee, Young Hee

    2016-01-01

    Silicon based metal-semiconductor-metal (MSM) photodetectors have faster photogeneration and carrier collection across the metal-semiconductor Schottky contacts, and CMOS integratibility compared to conventional p-n junction photodetectors. However, its operations are limited by low photogeneration, inefficient carrier-separation, and low mobility. Here, we show a simple and highly effective approach for boosting Si MSM photodetector efficiency by uniformly decorating semiconducting CdSe quantum dots on Si channel (Si-QD). Significantly higher photocurrent on/off ratio was achieved up to over 500 compared to conventional Si MSM photodetector (on/off ratio ~5) by increasing photogeneration and improving carrier separation. Furthermore, a substrate-biasing technique invoked wide range of tunable photocurrent on/off ratio in Si-QD photodetector (ranging from 2.7 to 562) by applying suitable combinations of source-drain and substrate biasing conditions. Strong photogeneration and carrier separation were achieved by employing Stark effect into the Si-QD hybrid system. These results highlight a promising method for enhancing Si MSM photodetector efficiency more than 100 times and simultaneously compatible with current silicon technologies. PMID:27886274

  17. Boosting photoresponse in silicon metal-semiconductor-metal photodetector using semiconducting quantum dots

    NASA Astrophysics Data System (ADS)

    Biswas, Chandan; Kim, Yonghwan; Lee, Young Hee

    2016-11-01

    Silicon based metal-semiconductor-metal (MSM) photodetectors have faster photogeneration and carrier collection across the metal-semiconductor Schottky contacts, and CMOS integratibility compared to conventional p-n junction photodetectors. However, its operations are limited by low photogeneration, inefficient carrier-separation, and low mobility. Here, we show a simple and highly effective approach for boosting Si MSM photodetector efficiency by uniformly decorating semiconducting CdSe quantum dots on Si channel (Si-QD). Significantly higher photocurrent on/off ratio was achieved up to over 500 compared to conventional Si MSM photodetector (on/off ratio ~5) by increasing photogeneration and improving carrier separation. Furthermore, a substrate-biasing technique invoked wide range of tunable photocurrent on/off ratio in Si-QD photodetector (ranging from 2.7 to 562) by applying suitable combinations of source-drain and substrate biasing conditions. Strong photogeneration and carrier separation were achieved by employing Stark effect into the Si-QD hybrid system. These results highlight a promising method for enhancing Si MSM photodetector efficiency more than 100 times and simultaneously compatible with current silicon technologies.

  18. Cosmic Ray Measurements by Scintillators with Metal Resistor Semiconductor Avalanche Photo Diodes

    ERIC Educational Resources Information Center

    Blanco, Francesco; La Rocca, Paola; Riggi, Francesco; Akindinov, Alexandre; Mal'kevich, Dmitry

    2008-01-01

    An educational set-up for cosmic ray physics experiments is described. The detector is based on scintillator tiles with a readout through metal resistor semiconductor (MRS) avalanche photo diode (APD) arrays. Typical measurements of the cosmic angular distribution at sea level and a study of the East-West asymmetry obtained by such a device are…

  19. Semiconductor-based optical refrigerator

    DOEpatents

    Epstein, Richard I.; Edwards, Bradley C.; Sheik-Bahae, Mansoor

    2002-01-01

    Optical refrigerators using semiconductor material as a cooling medium, with layers of material in close proximity to the cooling medium that carries away heat from the cooling material and preventing radiation trapping. In addition to the use of semiconducting material, the invention can be used with ytterbium-doped glass optical refrigerators.

  20. Device and Circuit Codesign Strategy for Application to Low-Noise Amplifier Based on Silicon Nanowire Metal-Oxide-Semiconductor Field Effect Transistors

    NASA Astrophysics Data System (ADS)

    Seongjae Cho,; Hee-Sauk Jhon,; Jung Hoon Lee,; Se Hwan Park,; Hyungcheol Shin,; Byung-Gook Park,

    2010-04-01

    In this study, a full-range approach from device level to circuit level design is performed for RF application of silicon nanowire (SNW) metal-oxide-semiconductor field effect transistors (MOSFETs). Both DC and AC analyses have been conducted to confirm the advantages of an SNW MOSFET over the conventional planar (CPL) MOSFET device having dimensional equivalence. Besides the intrinsic characteristic parameters, the extrinsic resistance and capacitance caused by wiring components are extracted from each device. On the basis of these intrinsic and extrinsic parameters, a multi-fingered 5.8 GHz low-noise amplifier (LNA) design adopting SNW MOSFETs has been achieved, which shows an improved gain of 17.5 dB and a noise figure of 3.1 dB over a CPL MOSFET LNA.

  1. Effect of nitrogen incorporation into Al-based gate insulators in AlON/AlGaN/GaN metal-oxide-semiconductor structures

    NASA Astrophysics Data System (ADS)

    Asahara, Ryohei; Nozaki, Mikito; Yamada, Takahiro; Ito, Joyo; Nakazawa, Satoshi; Ishida, Masahiro; Ueda, Tetsuzo; Yoshigoe, Akitaka; Hosoi, Takuji; Shimura, Takayoshi; Watanabe, Heiji

    2016-10-01

    The superior physical and electrical properties of aluminum oxynitride (AlON) gate dielectrics on AlGaN/GaN substrates in terms of thermal stability, reliability, and interface quality were demonstrated by direct AlON deposition and subsequent annealing. Nitrogen incorporation into alumina was proven to be beneficial both for suppressing intermixing at the insulator/AlGaN interface and reducing the number of electrical defects in Al2O3 films. Consequently, we achieved high-quality AlON/AlGaN/GaN metal-oxide-semiconductor capacitors with improved stability against charge injection and a reduced interface state density as low as 1.2 × 1011 cm-2 eV-1. The impact of nitrogen incorporation into the insulator will be discussed on the basis of experimental findings.

  2. Single-photon imaging in complementary metal oxide semiconductor processes

    PubMed Central

    Charbon, E.

    2014-01-01

    This paper describes the basics of single-photon counting in complementary metal oxide semiconductors, through single-photon avalanche diodes (SPADs), and the making of miniaturized pixels with photon-counting capability based on SPADs. Some applications, which may take advantage of SPAD image sensors, are outlined, such as fluorescence-based microscopy, three-dimensional time-of-flight imaging and biomedical imaging, to name just a few. The paper focuses on architectures that are best suited to those applications and the trade-offs they generate. In this context, architectures are described that efficiently collect the output of single pixels when designed in large arrays. Off-chip readout circuit requirements are described for a variety of applications in physics, medicine and the life sciences. Owing to the dynamic nature of SPADs, designs featuring a large number of SPADs require careful analysis of the target application for an optimal use of silicon real estate and of limited readout bandwidth. The paper also describes the main trade-offs involved in architecting such chips and the solutions adopted with focus on scalability and miniaturization. PMID:24567470

  3. Galvanic displacement of metals on semiconductor nanocrystals

    NASA Astrophysics Data System (ADS)

    Johnson, Melanie; Kelly, Joel A.; Henderson, Eric J.; Veinot, Jonathan G. C.

    2009-11-01

    We report the galvanic displacement (GD) of germanium from germanium nanocrystals (Ge-NCs) with silver. The Ge-NCs are synthesized by reductive thermal processing of germanium suboxide sol-gel prepolymers. Thermal processing yields size-controlled oxide-embedded Ge-NCs, which are liberated by dissolution of the germanium oxide matrix in water. Subsequent exposure of the freestanding Ge-NCs to aqueous solutions of AgNO3 leads to deposition of silver nanostructures by GD. The resulting metal structures were analyzed by XRD, XPS, TEM and EDX, confirming deposition of elemental silver in a variety of shapes and sizes.

  4. Dynamical excitonic effects in metals and semiconductors.

    PubMed

    Marini, Andrea; Del Sole, Rodolfo

    2003-10-24

    The dynamics of an electron-hole pair induced by the time-dependent screened Coulomb interaction is discussed. In contrast to the case where the static electron-hole interaction is considered we demonstrate the occurrence of important dynamical excitonic effects in the solution of the Bethe-Salpeter equation. This is illustrated in the calculated absorption spectra of noble metals (copper and silver) and silicon. Dynamical corrections strongly affect the spectra, partially canceling dynamical self-energy effects and leading to good agreement with experiment.

  5. Metal Oxide Semi-Conductor Gas Sensors in Environmental Monitoring

    PubMed Central

    Fine, George F.; Cavanagh, Leon M.; Afonja, Ayo; Binions, Russell

    2010-01-01

    Metal oxide semiconductor gas sensors are utilised in a variety of different roles and industries. They are relatively inexpensive compared to other sensing technologies, robust, lightweight, long lasting and benefit from high material sensitivity and quick response times. They have been used extensively to measure and monitor trace amounts of environmentally important gases such as carbon monoxide and nitrogen dioxide. In this review the nature of the gas response and how it is fundamentally linked to surface structure is explored. Synthetic routes to metal oxide semiconductor gas sensors are also discussed and related to their affect on surface structure. An overview of important contributions and recent advances are discussed for the use of metal oxide semiconductor sensors for the detection of a variety of gases—CO, NOx, NH3 and the particularly challenging case of CO2. Finally a description of recent advances in work completed at University College London is presented including the use of selective zeolites layers, new perovskite type materials and an innovative chemical vapour deposition approach to film deposition. PMID:22219672

  6. A Nanocrystallite Si based Metal-Semiconductor-Metal Photosensors and Solar Energy Transformers with Enhanced Responsivity at UV-blue Wavelengths

    DTIC Science & Technology

    2007-12-05

    Based MOS Diode by Interfacial Precipitated Si Nano-Pyramids”, 2006 Integrated Photonics Research and Applications (IPRA) and Nanophotonics (NANO...Jen Chou, “Anomalous Absorption of Silicon Nanocrystals in Silicon-rich SiO1.25 Matrix Precipitated by CO2 Laser Annealing”, 2006 Integrated Photonics Research

  7. The realization of half-metal and spin-semiconductor for metal adatoms on arsenene

    NASA Astrophysics Data System (ADS)

    Li, Geng; Zhao, Yinchang; Zeng, Shuming; Ni, Jun

    2016-12-01

    First-principles calculations have been performed to study the adsorption of 15 different metal adatoms on silicenelike arsenene. The adsorption energies, geometries, density of states, dipole moments, work functions, net magnetic moments and Bader charges transferred from adatoms to arsenene sheet are calculated. All of the 15 metal adatoms on arsenene have binding energies larger than cohesive energies of the bulk metal, implying that stable adsorbates can be formed. As a result of the localized states originating from adatoms, the adsorption systems show a rich variety of electronic properties, such as metal, half-metal, semiconducting, and spin-semiconducting behaviors. The Co doped arsenene displays a half-metal property. The adsorption of Cu, Ag, and Au turns semiconducting arsenene into a narrow gap spin-semiconductor. These results indicate potential applications of functionalizations of silicenelike arsenene with metal adatoms, in particular for spintronics and dilute magnetic semiconductor materials.

  8. Fabrication and characterization of metal-semiconductor-metal nanorod using template synthesis

    SciTech Connect

    Kim, Kyohyeok; Kwon, Namyong; Hong, Junki; Chung, Ilsub

    2009-07-15

    The authors attempted to fabricate and characterize one dimensional metal-semiconductor-metal (MSM) nanorod using a template. Cadmium selenide (CdSe) and polypyrrole (Ppy) were chosen as n-type and p-type semiconductor materials, respectively, whereas Au was chosen as a metal electrode. The fabrication of the nanorod was achieved by ''template synthesis'' method using polycarbonate membrane. The structure of the fabricated nanorod was analyzed using scanning electron microscopy and energy dispersive spectroscopy. In addition, the electrical properties of MSM nanorods were characterized using scanning probe microscopy (Seiko Instruments, SPA 300 HV) by probing with a conductive cantilever. I-V characteristics as a function of the temperature give the activation energy, as well as the barrier height of a metal-semiconductor contact, which is useful to understand the conduction mechanism of MSM nanorods.

  9. Spin-Orbit Interaction in Metals, Elementary Semiconductors, and Semisonductor Compounds

    NASA Astrophysics Data System (ADS)

    Mašović, D. R.; Vukajilović, F. R.

    1983-06-01

    The general analytic formulas for matrix elements of spin-orbit interaction in metals, elementary semiconductors, and binary semiconductor compounds which belongs to cubic crystal systems are obtained on the basis of Roothaan-Hartree-Fock atomic orbitals.

  10. Radiation hardening of metal-oxide semi-conductor (MOS) devices by boron

    NASA Technical Reports Server (NTRS)

    Danchenko, V.

    1974-01-01

    Technique using boron effectively protects metal-oxide semiconductor devices from ionizing radiation without using shielding materials. Boron is introduced into insulating gate oxide layer at semiconductor-insulator interface.

  11. 75 FR 75694 - Certain Semiconductor Integration Circuits Using Tungsten Metallization and Products Containing...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-12-06

    ... From the Federal Register Online via the Government Publishing Office INTERNATIONAL TRADE COMMISSION Certain Semiconductor Integration Circuits Using Tungsten Metallization and Products Containing... United States after importation of certain semiconductor integrated circuits using tungsten...

  12. Amorphous metallizations for high-temperature semiconductor device applications

    NASA Technical Reports Server (NTRS)

    Wiley, J. D.; Perepezko, J. H.; Nordman, J. E.; Kang-Jin, G.

    1981-01-01

    The initial results of work on a class of semiconductor metallizations which appear to hold promise as primary metallizations and diffusion barriers for high temperature device applications are presented. These metallizations consist of sputter-deposited films of high T sub g amorphous-metal alloys which (primarily because of the absence of grain boundaries) exhibit exceptionally good corrosion-resistance and low diffusion coefficients. Amorphous films of the alloys Ni-Nb, Ni-Mo, W-Si, and Mo-Si were deposited on Si, GaAs, GaP, and various insulating substrates. The films adhere extremely well to the substrates and remain amorphous during thermal cycling to at least 500 C. Rutherford backscattering and Auger electron spectroscopy measurements indicate atomic diffussivities in the 10 to the -19th power sq cm/S range at 450 C.

  13. ``Electric growth`` of metal overlayers on semiconductor substrates

    SciTech Connect

    Zhang, Z.; Cho, J.H. |; Niu, Q.; Shih, C.K.; Suo, Z.

    1998-02-01

    In this article, the authors present the main results from their recent studies of metal overlayer growth on semiconductor substrates. They show that a variety of novel phenomena can exist in such systems, resulting from several competing interactions. The confined motion of the conduction electrons within the metal overlayer can mediate a surprisingly long-range repulsive force between the metal-semiconductor interface and the growth front, acting to stabilize the overlayer. Electron transfer from the overlayer to the substrate leads to an attractive force between the two interfaces, acting to destabilize the overlayer. Interface-induced Friedel oscillations in electron density can further impose an oscillatory modulation onto the two previous interactions. These three competing factors, of all electronic nature, can make a flat metal overlayer critically, marginally, or magically stable, or totally unstable against roughening. The authors further show that, for many systems, these electronic effects can easily win over the effect of stress. First-principles studies of a few representative systems support the main features of the present electronic growth concept.

  14. Role of direct electron-phonon coupling across metal-semiconductor interfaces in thermal transport via molecular dynamics

    SciTech Connect

    Lin, Keng-Hua; Strachan, Alejandro

    2015-07-21

    Motivated by significant interest in metal-semiconductor and metal-insulator interfaces and superlattices for energy conversion applications, we developed a molecular dynamics-based model that captures the thermal transport role of conduction electrons in metals and heat transport across these types of interface. Key features of our model, denoted eleDID (electronic version of dynamics with implicit degrees of freedom), are the natural description of interfaces and free surfaces and the ability to control the spatial extent of electron-phonon (e-ph) coupling. Non-local e-ph coupling enables the energy of conduction electrons to be transferred directly to the semiconductor/insulator phonons (as opposed to having to first couple to the phonons in the metal). We characterize the effect of the spatial e-ph coupling range on interface resistance by simulating heat transport through a metal-semiconductor interface to mimic the conditions of ultrafast laser heating experiments. Direct energy transfer from the conduction electrons to the semiconductor phonons not only decreases interfacial resistance but also increases the ballistic transport behavior in the semiconductor layer. These results provide new insight for experiments designed to characterize e-ph coupling and thermal transport at the metal-semiconductor/insulator interfaces.

  15. A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors

    NASA Astrophysics Data System (ADS)

    Krylov, Igor; Pokroy, Boaz; Eizenberg, Moshe; Ritter, Dan

    2016-09-01

    We compare the electrical properties of HfO2/Al2O3 nano-laminates with those of the ternary HfxAlyO compound in metal oxide semiconductor (MOS) capacitors. The dielectrics were deposited by atomic layer deposition on InGaAs. Water, ozone, and oxygen plasma were tested as oxygen precursors, and best results were obtained using water. The total dielectric thickness was kept constant in our experiments. It was found that the effective dielectric constant increased and the leakage current decreased with the number of periods. Best results were obtained for the ternary compound. The effect of the sublayer thicknesses on the electrical properties of the interface was carefully investigated, as well as the role of post-metallization annealing. Possible explanations for the observed trends are provided. We conclude that the ternary HfxAlyO compound is more favorable than the nano-laminates approach for InGaAs based MOS transistor applications.

  16. Light sources based on semiconductor current filaments

    DOEpatents

    Zutavern, Fred J.; Loubriel, Guillermo M.; Buttram, Malcolm T.; Mar, Alan; Helgeson, Wesley D.; O'Malley, Martin W.; Hjalmarson, Harold P.; Baca, Albert G.; Chow, Weng W.; Vawter, G. Allen

    2003-01-01

    The present invention provides a new type of semiconductor light source that can produce a high peak power output and is not injection, e-beam, or optically pumped. The present invention is capable of producing high quality coherent or incoherent optical emission. The present invention is based on current filaments, unlike conventional semiconductor lasers that are based on p-n junctions. The present invention provides a light source formed by an electron-hole plasma inside a current filament. The electron-hole plasma can be several hundred microns in diameter and several centimeters long. A current filament can be initiated optically or with an e-beam, but can be pumped electrically across a large insulating region. A current filament can be produced in high gain photoconductive semiconductor switches. The light source provided by the present invention has a potentially large volume and therefore a potentially large energy per pulse or peak power available from a single (coherent) semiconductor laser. Like other semiconductor lasers, these light sources will emit radiation at the wavelength near the bandgap energy (for GaAs 875 nm or near infra red). Immediate potential applications of the present invention include high energy, short pulse, compact, low cost lasers and other incoherent light sources.

  17. P-Channel InGaN/GaN heterostructure metal-oxide-semiconductor field effect transistor based on polarization-induced two-dimensional hole gas

    PubMed Central

    Zhang, Kexiong; Sumiya, Masatomo; Liao, Meiyong; Koide, Yasuo; Sang, Liwen

    2016-01-01

    The concept of p-channel InGaN/GaN heterostructure field effect transistor (FET) using a two-dimensional hole gas (2DHG) induced by polarization effect is demonstrated. The existence of 2DHG near the lower interface of InGaN/GaN heterostructure is verified by theoretical simulation and capacitance-voltage profiling. The metal-oxide-semiconductor FET (MOSFET) with Al2O3 gate dielectric shows a drain-source current density of 0.51 mA/mm at the gate voltage of −2 V and drain bias of −15 V, an ON/OFF ratio of two orders of magnitude and effective hole mobility of 10 cm2/Vs at room temperature. The normal operation of MOSFET without freeze-out at 8 K further proves that the p-channel behavior is originated from the polarization-induced 2DHG. PMID:27021054

  18. Ion Implantation Effects on the Metal-Semiconductor Interfaces.

    NASA Astrophysics Data System (ADS)

    Yapsir, Andrie Setiawan

    1988-12-01

    In this thesis, the effects of ion implantation on metal-semiconductor interfaces are studied. Hydrogen ions have been used as the implanted species. The implantation is carried out on Al/n-Si Schottky contacts. Electrical characterizations, deep level transient spectroscopy measurements, and the ^{15}N hydrogen profiling technique have been used to study the effects of ion implantation. It is demonstrated that the defect centers in the depletion region created by hydrogen implantation have more likely negative or possibly neutral signatures, rather than a positive signature as has been previously speculated. These negatively charged centers compensate for the positive donor resulting in a widening of the depletion region and reduction in the capacitance of the metal-semiconductor contacts. The tendency of hydrogen to passivate its own damage which results in the recovery of electronic transport across the metal-semiconductor junction upon low temperature heat treatment is also demonstrated. In connection with the behavior of hydrogen in silicon, in the second part of this thesis, detailed theoretical calculations on the hydrogen passivation of defects in silicon are carried out. A particular type of defect, namely, a substitutional sulfur in silicon, is chosen and is studied using the modified intermediate neglect of differential overlap (MINDO/3) molecular orbital method. It is found that the sulfur center can be passivated using one or two hydrogen atoms. The calculations indicate that the most stable positions of the hydrogen atoms are between the sulfur and its silicon neighbors. The hydrogens bond to the nearest silicon atoms and only weakly interact with the sulfur. Thermochemistry considerations predict that a single hydrogen passivates the sulfur center, provided these centers are in abundance in the silicon. Hydrogen ion implantation has also been carried out on Schottky contacts having a large difference in metal work function, Ti/p-Si and Pt

  19. Giant geometrically amplified piezoresistance in metal-semiconductor hybrid resistors

    NASA Astrophysics Data System (ADS)

    Hansen, Ole; Reck, Kasper; Thomsen, Erik V.

    2008-12-01

    We show that very high geometrically amplified piezoresistance can indeed be obtained in microstructured metal-semiconductor hybrid devices, even significantly higher amplification factors than the factor of approximately 8 demonstrated recently by Rowe and co-workers may be achieved. However, we also show that this amplification cannot be used to realize high sensitivity sensor devices due to limitation of the applied voltage across the device when the transfer resistance is smaller than the total resistance of the device. In that case, the sensitivity in units of V V-1 Pa-1 is always less than the sensitivity of conventional piezoresistors fabricated in the same piezoresistive material.

  20. Ultraviolet GaN photodetectors on Si via oxide buffer heterostructures with integrated short period oxide-based distributed Bragg reflectors and leakage suppressing metal-oxide-semiconductor contacts

    SciTech Connect

    Szyszka, A. E-mail: adam.szyszka@pwr.wroc.pl; Haeberlen, M.; Storck, P.; Thapa, S. B.; Schroeder, T.

    2014-08-28

    Based on a novel double step oxide buffer heterostructure approach for GaN integration on Si, we present an optimized Metal-Semiconductor-Metal (MSM)-based Ultraviolet (UV) GaN photodetector system with integrated short-period (oxide/Si) Distributed Bragg Reflector (DBR) and leakage suppressing Metal-Oxide-Semiconductor (MOS) electrode contacts. In terms of structural properties, it is demonstrated by in-situ reflection high energy electron diffraction and transmission electron microscopy-energy dispersive x-ray studies that the DBR heterostructure layers grow with high thickness homogeneity and sharp interface structures sufficient for UV applications; only minor Si diffusion into the Y{sub 2}O{sub 3} films is detected under the applied thermal growth budget. As revealed by comparative high resolution x-ray diffraction studies on GaN/oxide buffer/Si systems with and without DBR systems, the final GaN layer structure quality is not significantly influenced by the growth of the integrated DBR heterostructure. In terms of optoelectronic properties, it is demonstrated that—with respect to the basic GaN/oxide/Si system without DBR—the insertion of (a) the DBR heterostructures and (b) dark current suppressing MOS contacts enhances the photoresponsivity below the GaN band-gap related UV cut-off energy by almost up to two orders of magnitude. Given the in-situ oxide passivation capability of grown GaN surfaces and the one order of magnitude lower number of superlattice layers in case of higher refractive index contrast (oxide/Si) systems with respect to classical III-N DBR superlattices, virtual GaN substrates on Si via functional oxide buffer systems are thus a promising robust approach for future GaN-based UV detector technologies.

  1. Broadband terahertz generation using the semiconductor-metal transition in VO{sub 2}

    SciTech Connect

    Charipar, Nicholas A. Kim, Heungsoo; Mathews, Scott A.; Piqué, Alberto

    2016-01-15

    We report the design, fabrication, and characterization of broadband terahertz emitters based on the semiconductor-metal transition in thin film VO{sub 2} (vanadium dioxide). With the appropriate geometry, picosecond electrical pulses are generated by illuminating 120 nm thick VO{sub 2} with 280 fs pulses from a femtosecond laser. These ultrafast electrical pulses are used to drive a simple dipole antenna, generating broadband terahertz radiation.

  2. Wide-area thin film metal-semiconductor-metal photodetectors for lidar applications

    NASA Astrophysics Data System (ADS)

    Morrison, Charles B.; Glinz, Andreas P.; Zhu, Zheng; Bechtel, James H.; Frimel, Steven M.; Roenker, Kenneth P.

    1998-04-01

    Novel interdigitated metal-semiconductor-metal structures offer new approaches for the development of broad-area, high-speed photodetectors to be used in optical free space communications and light detection and ranging applications. Inherent advantages include: lower capacitance than typical p-i-n structures, a wide dynamic range, and ease of fabrication. We have constructed broad area metal- semiconductor-metal photodetectors (MSM-PDs) by means of epitaxial liftoff and grafting technologies. Two computer models have been used to examine the effects of design parameters on the performance of broad-area, high-speed MSM- PD devices. The first model indicates that inverting the membrane so that the electrodes are placed between the non- conducting host substrate and the semiconductor material improves the signal-to-noise ration of the device, expanding its dynamic range. This model suggests that processing of the backside of the semiconductor material with antireflection coatings further improves device performance. Carrier collection behavior described by the second model suggests new electrode configurations for improved high speed operation which can only be applied to an inverted MSM-PD carried on a thin film membrane. A number of different fully passivated large area MSM-PD configurations have been fabricated and tested. Initial dark current data are compared favorably to published results.

  3. Comparison between highly doped semiconductor and metal infrared antenna

    NASA Astrophysics Data System (ADS)

    Yang, Yanxiang; Lai, Jianjun; Li, Hongwei; Chen, Changhong

    2015-10-01

    Optical antenna can strongly enhance the interaction of light with matter by their ability to localize electromagnetic fields on nano-metric scale. This allows for the engineering of absorption capabilities to visible and infrared detectors with very small active areas. In this study, we focused on the study of metal and semiconductor infrared antennas for nano-bolometer application. The infrared antennas are applied for increasing the effective absorbing across section, enhancing the field intensity at the gap of the antennas and improving the absorbance of bolometer materials located at the gap. We perform numerical simulation of the characteristics of infrared antennas and analysis the influence of various parameters of antennas (length, wide, and material types) and optimized these parameters to achieve the maximum field enhancement for an optical antenna. We also highlight the comparisons of field enhancement of infrared antenna materials between metal and highly doped semiconductor and discuss some practical issues related to the application of infrared antenna for infrared detectors.

  4. Synthesis and catalytic properties of metal and semiconductor nanoclusters

    SciTech Connect

    Wilcoxon, J.P.; Martino, T.; Klavetter, E.; Sylwester, A.P.

    1993-08-01

    Synthesis of metal or semiconductor nanoclusters in microheterogeneous oil-continuous inverse micelle systems is discussed. We focus on synthesis and catalytic properties of palladium, iron, and iron sulfide nanoclusters. Cluster size-control is achieved by changing the micelle size which is determined by small angle neutron scattering (SANS) and chosen to produce cluster in size range of 1-20 nm. Cluster sizes were determined by either transmission electron microscopy (TEM) or small-angle x-ray scattering (SAXS). Cluster structure was determined by either x-ray or electron diffraction. In the case of Fe nanoclusters the crystal structure depended on the chemical nature of the surfactant micelle used in the synthesis, illustrating the important role of the surfactant during the growth process. Results of in-situ pyrene hydrogenation using size-selected Pd clusters show a significant increase in activity/total surface area as the size decreases. These clusters also proved effective as unsupported catalysts for direct coal hydropyrolysis, even at very low metal concentrations. Synthesis and optical features of a new semiconductor cluster material, FeS{sub 2}, is discussed with regard to its use in photocatalysis. Application of FeS{sub 2} in coal hydrogenolysis reactions has improved yields of short chain hydrocarbons significantly compared to conventional FeS{sub 2} powders.

  5. A model for the C-V characteristics of the metal-ferroelectric-insulator-semiconductor structure

    NASA Astrophysics Data System (ADS)

    Zhang, Jun Jie; Sun, Jing; Zheng, Xue Jun

    2009-02-01

    A model is developed to describe the characteristics of the metal-ferroelectric-insulator-semiconductor (MFIS) structure based on the dipole switching theory (DST) and the silicon physics of metal-oxide-semiconductor (MOS) structure. The ferroelectric dipole distribution function is used to simulate the history-dependent electric field effect of the ferroelectric layer. Using the model, the thickness effects of the ferroelectric and insulator layers on the capacitance-voltage ( C-V) characteristic and the memory window were investigated for Pt/SBT/ZrO 2/Si and Pt/BLT/MgO/Si structures. All the simulation results show good agreement with the experimental results, indicating that the model is suitable for simulating the C-V characteristic and the memory window of MFIS structure. In addition, the mathematical description is simple and can be easily integrated into the electronic design automation (EDA) software for circuit simulation.

  6. Generalized Electron Counting in Determination of Metal-Induced Reconstruction of Compound Semiconductor Surfaces

    SciTech Connect

    Zhang, Lixin; Wang, E. G.; Xue, Qi-Kun; Zhang, S. B.; Zhang, Zhenyu

    2006-01-01

    Based on theoretical analysis, first-principles calculations, and experimental observations, we establish a generic guiding principle, embodied in generalized electron counting (GEC), that governs the surface reconstruction of compound semiconductors induced by different metal adsorbates. Within the GEC model, the adsorbates serve as an electron bath, donating or accepting the right number of electrons as the host surface chooses a specific reconstruction that obeys the classic electron-counting model. The predictive power of the GEC model is illustrated for a wide range of metal adsorbates.

  7. Origin of the performances degradation of two-dimensional-based metal-oxide-semiconductor field effect transistors in the sub-10 nm regime: A first-principles study

    SciTech Connect

    Lu, Anh Khoa Augustin; Pourtois, Geoffrey; Agarwal, Tarun; Afzalian, Aryan; Radu, Iuliana P.; Houssa, Michel

    2016-01-25

    The impact of the scaling of the channel length on the performances of metal-oxide-semiconductor field effect transistors, based on two-dimensional (2D) channel materials, is theoretically investigated, using density functional theory combined with the non-equilibrium Green's function method. It is found that the scaling of the channel length below 10 nm leads to strong device performance degradations. Our simulations reveal that this degradation is essentially due to the tunneling current flowing between the source and the drain in these aggressively scaled devices. It is shown that this electron tunneling process is modulated by the effective mass of the 2D channel material, and sets the limit of the scaling in future transistor designs.

  8. Spin-Seebeck Effect in III-V Based Semiconductors

    NASA Astrophysics Data System (ADS)

    Jaworski, Christopher M.; Myers, Roberto C.; Heremans, Joseph P.

    2012-02-01

    The spin-Seebeck effect has now been observed in metals^1 (NiFe), semiconductors^2 (GaMnAs), and insulators^3 (YIG). It consists of a thermally generated spin distribution that is phonon driven. Here we extend our measurements of the spin-Seebeck effect to other group III-V based magnetic semiconductors and present measurements of conventional thermomagnetic and galvanomagnetic properties as well as the spin-Seebeck effect. Work supported by the National Science Foundation, NSF-CBET-1133589 1. K. Uchida, et al., Nature 455 778 (2008) 2. C.M. Jaworski et al., Nature Materials 8 898 (2010), Phys. Rev. Lett. 106 186601 (2011) 3. K. Uchida, et al., Nature Materials 8 893 (2010)

  9. EDITORIAL: Frontiers in semiconductor-based devices Frontiers in semiconductor-based devices

    NASA Astrophysics Data System (ADS)

    Krishna, Sanjay; Phillips, Jamie; Ghosh, Siddhartha; Ma, Jack; Sabarinanthan, Jayshri; Stiff-Roberts, Adrienne; Xu, Jian; Zhou, Weidong

    2009-12-01

    This special cluster of Journal of Physics D: Applied Physics reports proceedings from the Frontiers in Semiconductor-Based Devices Symposium, held in honor of the 60th birthday of Professor Pallab Bhattacharya by his former doctoral students. The symposium took place at the University of Michigan, Ann Arbor on 6-7 December 2009. Pallab Bhattacharya has served on the faculty of the Electrical Engineering and Computer Science Department at the University of Michigan, Ann Arbor for 25 years. During this time, he has made pioneering contributions to semiconductor epitaxy, characterization of strained heterostructures, self-organized quantum dots, quantum-dot optoelectronic devices, and integrated optoelectronics. Professor Bhattacharya has been recognized for his accomplishments by membership of the National Academy of Engineering, by chaired professorships (Charles M Vest Distinguished University Professor and James R Mellor Professor of Engineering), and by selection as a Fellow of the IEEE, among numerous other honors and awards. Professor Bhattacharya has also made remarkable contributions in education, including authorship of the textbook Semiconductor Optoelectronic Devices (Prentice Hall, 2nd edition) and the production of 60 PhD students (and counting). In fact, this development of critical human resources is one of the biggest impacts of Professor Bhattacharya's career. His guidance and dedication have shaped the varied professional paths of his students, many of whom currently enjoy successful careers in academia, industry, and government around the world. This special cluster acknowledges the importance of Professor Bhattacharya's influence as all of the contributions are from his former doctoral students. The symposium reflects the significant impact of Professor Bhattacharya's research in that the topics span diverse, critical research areas, including: semiconductor lasers and modulators, nanoscale quantum structure-based devices, flexible CMOS-based

  10. Degradation properties in metal-nitride-oxide-semiconductor structures

    NASA Astrophysics Data System (ADS)

    Suzuki, Eiichi; Hayashi, Yutaka; Yanai, Hisayoshi

    1981-10-01

    Degradation properties in metal-nitride-oxide-semiconductor (MNOS) structures are investigated using mainly p-channel MNOS transistors. A model is proposed on the basis of various experimental results, attributing the degradation to the passage of hole current through the SiO2 layer, followed by creation of hole traps in the SiO2 layer, and creation of interface states at the Si-SiO2 interface. A theoretical treatment of the enhancement of hole conduction in the degraded SiO2 layer of the p-channel thick-oxide MNOS transistor is performed, and the hole traps created in the SiO2 layer appear to be E' centers when the experimental results are fitted to the theoretical calculations. The nature of the interface states created by write-erase (W/E) cycling is also discussed, comparing the experimental results using a p- and an n-channel MNOS transistor.

  11. NO2 sensitive Au gate metal-oxide-semiconductor capacitors

    NASA Astrophysics Data System (ADS)

    Filippini, D.; Aragón, R.; Weimar, U.

    2001-08-01

    Au gate metal-oxide-semiconductor capacitors are sensitive to NO2 in air up to 200 ppm, depending on operating temperature (100 °C to 200 °C), gate thickness (50 to 900 nm), and morphology. In the absence of catalytic properties or lattice diffusivity, a model invoking molecular surface adsorption and grain boundary diffusion is proposed, which quantitatively describes the transient and steady state response of the devices. Sensitivity is given by the arrival of the diffusing species to the gate-dielectric interface, where capacitive coupling of the adsorbed molecules induces work function changes, which shift the flat band voltage positively, opposite that observed for H2 with Pd gates, consistently with an oxidizing, rather than reducing, character.

  12. Metal-semiconductor interfacial reactions - Ni/Si system

    NASA Technical Reports Server (NTRS)

    Cheung, N. W.; Grunthaner, P. J.; Grunthaner, F. J.; Mayer, J. W.; Ullrich, B. M.

    1981-01-01

    X-ray photoelectron spectroscopy and channeling measurements with MeV He-4(+) ions have been used to probe the structure of the interface in the Ni/Si system. It is found that reactions occur where Ni is deposited on Si at 10 to the -10th torr: Si atoms are displaced from lattice sites, the Ni atoms are in an Si-rich environment, and the Ni/Si interface is graded in composition. Composition gradients are present at both interfaces in the Si/Ni2/Si/Ni system. For the Ni-Si system, cooling the substrate to 100 K slows down the reaction rate. The temperature dependence of the interfacial reactivity indicates the kinetic nature of metal-semiconductor interfaces.

  13. Extraordinary electroconductance in metal-semiconductor hybrid structures.

    PubMed

    Wang, Yun; Newaz, A K M; Wu, Jian; Solin, S A; Kavasseri, V R; Jin, N; Ahmed, I S; Adesida, I

    2008-06-30

    We report the phenomenon of extraordinary electroconductance in microscopic metal-semiconductor hybrid structures fabricated from GaAs epitaxial layer and a Ti thin film shunt. Four-lead Van der Pauw structures show a gain of 5.2% in electroconductance under +2.5 kVcm with zero shunt bias. The increase in the sample conductance results from the thermionic field emission of electrons and the geometrical amplification. A model provides good agreement with the experimental data and clearly demonstrates the geometry dependence of the field effect in extraordinary electroconductance (EEC). The differences between EEC devices and field effect transistors, such as junction field effect transistor (FET) and Schottky barrier gate FET, are discussed.

  14. Ultrafast dynamics of metal plasmons induced by 2D semiconductor excitons in hybrid nanostructure arrays

    DOE PAGES

    Boulesbaa, Abdelaziz; Babicheva, Viktoriia E.; Wang, Kai; ...

    2016-11-17

    With the advanced progress achieved in the field of nanotechnology, localized surface plasmons resonances (LSPRs) are actively considered to improve the efficiency of metal-based photocatalysis, photodetection, and photovoltaics. Here, we report on the exchange of energy and electric charges in a hybrid composed of a two-dimensional tungsten disulfide (2D-WS2) monolayer and an array of aluminum (Al) nanodisks. Femtosecond pump-probe spectroscopy results indicate that within ~830 fs after photoexcitation of the 2D-WS2 semiconductor, energy transfer from the 2D-WS2 excitons excites the plasmons of the Al array. Then, upon the radiative and/or nonradiative damping of these excited plasmons, energy and/or electron transfermore » back to the 2D-WS2 semiconductor takes place as indicated by an increase in the reflected probe at the 2D exciton transition energies at later time-delays. This simultaneous exchange of energy and charges between the metal and the 2D-WS2 semiconductor resulted in an extension of the average lifetime of the 2D-excitons from ~15 to ~58 ps in absence and presence of the Al array, respectively. Furthermore, the indirectly excited plasmons were found to live as long as the 2D-WS2 excitons exist. Furthermore, the demonstrated ability to generate exciton-plasmons coupling in a hybrid nanostructure may open new opportunities for optoelectronic applications such as plasmonic-based photodetection and photocatalysis.« less

  15. Multiple percolation tunneling staircase in metal-semiconductor nanoparticle composites

    SciTech Connect

    Mukherjee, Rupam; Huang, Zhi-Feng; Nadgorny, Boris

    2014-10-27

    Multiple percolation transitions are observed in a binary system of RuO{sub 2}-CaCu{sub 3}Ti{sub 4}O{sub 12} metal-semiconductor nanoparticle composites near percolation thresholds. Apart from a classical percolation transition, associated with the appearance of a continuous conductance path through RuO{sub 2} metal oxide nanoparticles, at least two additional tunneling percolation transitions are detected in this composite system. Such behavior is consistent with the recently emerged picture of a quantum conductivity staircase, which predicts several percolation tunneling thresholds in a system with a hierarchy of local tunneling conductance, due to various degrees of proximity of adjacent conducting particles distributed in an insulating matrix. Here, we investigate a different type of percolation tunneling staircase, associated with a more complex conductive and insulating particle microstructure of two types of non-spherical constituents. As tunneling is strongly temperature dependent, we use variable temperature measurements to emphasize the hierarchical nature of consecutive tunneling transitions. The critical exponents corresponding to specific tunneling percolation thresholds are found to be nonuniversal and temperature dependent.

  16. High-efficiency metal-semiconductor-metal photodetectors on heteroepitaxially grown Ge on Si.

    PubMed

    Okyay, Ali K; Nayfeh, Ammar M; Saraswat, Krishna C; Yonehara, Takao; Marshall, Ann; McIntyre, Paul C

    2006-09-01

    We demonstrate extremely efficient germanium-on-silicon metal-semiconductor-metal photodetectors with responsivities (R) as high as 0.85 A/W at 1.55 microm and 2V reverse bias. Ge was directly grown on Si by using a novel heteroepitaxial growth technique, which uses multisteps of growth and hydrogen annealing to reduce surface roughness and threading dislocations that form due to the 4.2% lattice mismatch. Photodiodes on such layers exhibit reverse dark currents of 100 mA/cm2 and external quantum efficiency up to 68%. This technology is promising to realize monolithically integrated optoelectronics.

  17. Simulation of Submicronmeter Metal-Semiconductor-Metal Ultraviolet Photodiodes no Gallium Nitride

    SciTech Connect

    Li, J.; Donaldson, W.R.; Hsiang, T.Y.

    2004-09-15

    Ultrafast metal Semiconductor metal ultraviolet photodetectors on GaN with 0.3-mm finger width and spacing were fabricated and packaged with a specially designed fast circuit. The assembly was simulated using a distributed circuit approach with optical illumination at l = 270 nm. This is the first theoretical simulation report of this effect in ultrafast ultraviolet photodetectors on GaN. Comparison of simulations and measurements was made in a wide range of optical energies, and a close agreement was achieved with a single energy-scaling factor.

  18. Electrical properties of hybrid (ferromagnetic metal)-(layered semiconductor) Ni/p-GaSe structures

    SciTech Connect

    Bakhtinov, A. P. Vodopyanov, V. N.; Kovalyuk, Z. D.; Netyaga, V. V.; Lytvyn, O. S.

    2010-02-15

    Two-barrier Ni/n-Ga2Se3/p-GaSe structures with nanoscale Ni-alloy grains caused by reactions at the 'metal-layered semiconductor' interface were formed after growing Ni layers on the p-GaSe (0001) surface. Current-voltage and capacitance-voltage characteristics of hybrid structures were studied in the temperature range of 220-350 K. The dependence of the impedance spectra on the bias voltage was studied at various temperatures. The frequency dependences of the impedance at high frequencies (f = 10{sup 6} Hz) are discussed in terms of the phenomena of spin injection and extraction in structures with an ultrathin spin-selective Ni/n-Ga{sub 2}Se{sub 3} barrier and the effects of spin diffusion and relaxation in the semiconductor substrate. The room-temperature phenomena of the Coulomb blockade and negative differential capacitance were detected. These phenomena are explained based on an analysis of transport processes in a narrow region near the 'ferromagnetic metal-semiconductor' interface, where nanoscale grains are arranged.

  19. Empirical study of the metal-nitride-oxide-semiconductor device characteristics deduced from a microscopic model of memory traps

    SciTech Connect

    Ngai, K.L.; Hsia, Y.

    1982-07-15

    A graded-nitride gate dielectric metal-nitride-oxide-semiconductor (MNOS) memory transistor exhibiting superior device characteristics is presented and analyzed based on a qualitative microscopic model of the memory traps. The model is further reviewed to interpret some generic properties of the MNOS memory transistors including memory window, erase-write speed, and the retention-endurance characteristic features.

  20. Empirical study of the metal-nitride-oxide-semiconductor device characteristics deduced from a microscopic model of memory traps

    NASA Astrophysics Data System (ADS)

    Ngai, Kia L.; Hsia, Yukun

    1982-07-01

    A graded-nitride gate dielectric metal-nitride-oxide-semiconductor (MNOS) memory transistor exhibiting superior device characteristics is presented and analyzed based on a qualitative microscopic model of the memory traps. The model is further reviewed to interpret some generic properties of the MNOS memory transistors including memory window, erase-write speed, and the retention-endurance characteristic features.

  1. Deep-level spectroscopy in metal-insulator-semiconductor structures

    NASA Astrophysics Data System (ADS)

    Kurtz, A.; Muñoz, E.; Chauveau, J. M.; Hierro, A.

    2017-02-01

    In this study we present a method for measuring bulk traps using deep-level spectroscopy techniques in metal-insulator-semiconductor (MIS) structures. We will focus on deep-level transient spectroscopy (DLTS), although this can be extended to deep-level optical spectroscopy (DLOS) and similar techniques. These methods require the modulation of a depletion region either from a Schottky junction or from a highly asymmetric p-n junction, junctions that may not be realizable in many current material systems. This is the case of wide-bandgap semiconductor families that present a doping asymmetry or have a high residual carrier concentration or surface carrier accumulation, such as InGaN or ZnO. By adding a thin insulating layer and forming an MIS structure this problem can be circumvented and DLTS/DLOS can be performed under certain conditions. A model for the measurement of bulk traps in MIS structures is thus presented, focusing on the similarities with standard DLTS, maintaining when possible links to existing knowledge on DLTS and related techniques. The model will be presented from an equivalent circuit point of view. The effect of the insulating layer on DLTS is evaluated by a combination of simulations and experiments, developing methods for the measurement of these type of devices. As a validation, highly doped ZnO:Ga MIS devices have been successfully characterized and compared with a reference undoped sample using the methods described in this work, obtaining the same intrinsic levels previously reported in the literature but in material doped as high as 1× {{10}18} cm-3.

  2. Adjustable metal-semiconductor transition of FeS thin films by thermal annealing

    SciTech Connect

    Fu Ganhua; Polity, Angelika; Volbers, Niklas; Meyer, Bruno K.; Mogwitz, Boris; Janek, Juergen

    2006-12-25

    FeS polycrystalline thin films were prepared on float glass at 500 deg. C by radio-frequency reactive sputtering. The influence of vacuum annealing on the metal-semiconductor transition of FeS films was investigated. It has been found that with the increase of the annealing temperature from 360 to 600 deg. C, the metal-semiconductor transition temperature of FeS films first decreases and then increases, associated with first a reduction and then an enhancement of hysteresis width. The thermal stress is considered to give rise to the abnormal change of the metal-semiconductor transition of the FeS film during annealing.

  3. Semiconductor nanocrystal-based phagokinetic tracking

    SciTech Connect

    Alivisatos, A Paul; Larabell, Carolyn A; Parak, Wolfgang J; Le Gros, Mark; Boudreau, Rosanne

    2014-11-18

    Methods for determining metabolic properties of living cells through the uptake of semiconductor nanocrystals by cells. Generally the methods require a layer of neutral or hydrophilic semiconductor nanocrystals and a layer of cells seeded onto a culture surface and changes in the layer of semiconductor nanocrystals are detected. The observed changes made to the layer of semiconductor nanocrystals can be correlated to such metabolic properties as metastatic potential, cell motility or migration.

  4. Gate tunneling current and quantum capacitance in metal-oxide-semiconductor devices with graphene gate electrodes

    NASA Astrophysics Data System (ADS)

    An, Yanbin; Shekhawat, Aniruddh; Behnam, Ashkan; Pop, Eric; Ural, Ant

    2016-11-01

    Metal-oxide-semiconductor (MOS) devices with graphene as the metal gate electrode, silicon dioxide with thicknesses ranging from 5 to 20 nm as the dielectric, and p-type silicon as the semiconductor are fabricated and characterized. It is found that Fowler-Nordheim (F-N) tunneling dominates the gate tunneling current in these devices for oxide thicknesses of 10 nm and larger, whereas for devices with 5 nm oxide, direct tunneling starts to play a role in determining the total gate current. Furthermore, the temperature dependences of the F-N tunneling current for the 10 nm devices are characterized in the temperature range 77-300 K. The F-N coefficients and the effective tunneling barrier height are extracted as a function of temperature. It is found that the effective barrier height decreases with increasing temperature, which is in agreement with the results previously reported for conventional MOS devices with polysilicon or metal gate electrodes. In addition, high frequency capacitance-voltage measurements of these MOS devices are performed, which depict a local capacitance minimum under accumulation for thin oxides. By analyzing the data using numerical calculations based on the modified density of states of graphene in the presence of charged impurities, it is shown that this local minimum is due to the contribution of the quantum capacitance of graphene. Finally, the workfunction of the graphene gate electrode is extracted by determining the flat-band voltage as a function of oxide thickness. These results show that graphene is a promising candidate as the gate electrode in metal-oxide-semiconductor devices.

  5. Plasma Processing of Metallic and Semiconductor Thin Films in the Fisk Plasma Source

    NASA Technical Reports Server (NTRS)

    Lampkin, Gregory; Thomas, Edward, Jr.; Watson, Michael; Wallace, Kent; Chen, Henry; Burger, Arnold

    1998-01-01

    The use of plasmas to process materials has become widespread throughout the semiconductor industry. Plasmas are used to modify the morphology and chemistry of surfaces. We report on initial plasma processing experiments using the Fisk Plasma Source. Metallic and semiconductor thin films deposited on a silicon substrate have been exposed to argon plasmas. Results of microscopy and chemical analyses of processed materials are presented.

  6. Negative capacitance in optically sensitive metal-insulator-semiconductor-metal structures

    NASA Astrophysics Data System (ADS)

    Mikhelashvili, V.; Padmanabhan, R.; Meyler, B.; Yofis, S.; Eisenstein, G.

    2016-12-01

    We report a strong negative capacitance effect in back to back combination of a metal-insulator-semiconductor (MIS) structure and a metal-semiconductor junction, which is fabricated on an n type Silicon-on-Insulator substrate. The MIS capacitor comprises a SiO2-HfO2 insulator stack with embedded Pt nanoparticles. The capacitor undergoes a voltage stress process and thereby turns into a varactor and a photodetector. The negative capacitance is observed only under illumination in structures that employ a Schottky back contact. A symmetric double or an asymmetric single negative capacitance peak is observed depending on the nature of illumination. The phenomenon is attributed to the modulation of the semiconductor conductance due to photo generated carriers and their incorporation in trapping/de-trapping processes on interfacial and post filamentation induced defects in the insulator stack. The frequency range of the observed effect is limited to 100 kHz. Large ratios of light to dark and maximum to minimum of negative capacitances as well as of the obtained sensitivity to the applied voltage are, respectively, 105, more than 100, and 10-15. These were measured at 10 kHz under illumination at 365 nm with a power of 2.5 × 10-6 W.

  7. General atomistic approach for modeling metal-semiconductor interfaces using density functional theory and nonequilibrium Green's function

    NASA Astrophysics Data System (ADS)

    Stradi, Daniele; Martinez, Umberto; Blom, Anders; Brandbyge, Mads; Stokbro, Kurt

    2016-04-01

    Metal-semiconductor contacts are a pillar of modern semiconductor technology. Historically, their microscopic understanding has been hampered by the inability of traditional analytical and numerical methods to fully capture the complex physics governing their operating principles. Here we introduce an atomistic approach based on density functional theory and nonequilibrium Green's function, which includes all the relevant ingredients required to model realistic metal-semiconductor interfaces and allows for a direct comparison between theory and experiments via I -Vbias curve simulations. We apply this method to characterize an Ag/Si interface relevant for photovoltaic applications and study the rectifying-to-Ohmic transition as a function of the semiconductor doping. We also demonstrate that the standard "activation energy" method for the analysis of I -Vbias data might be inaccurate for nonideal interfaces as it neglects electron tunneling, and that finite-size atomistic models have problems in describing these interfaces in the presence of doping due to a poor representation of space-charge effects. Conversely, the present method deals effectively with both issues, thus representing a valid alternative to conventional procedures for the accurate characterization of metal-semiconductor interfaces.

  8. Metal-oxide-semiconductor field effect transistor humidity sensor using surface conductance

    NASA Astrophysics Data System (ADS)

    Song, Seok-Ho; Yang, Hyun-Ho; Han, Chang-Hoon; Ko, Seung-Deok; Lee, Seok-Hee; Yoon, Jun-Bo

    2012-03-01

    This letter presents a metal-oxide-semiconductor field effect transistor based humidity sensor which does not use any specific materials to sense the relative humidity. We simply make use of the low pressure chemical vapor deposited (LPCVD) silicon dioxide's surface conductance change. When the gate is biased and then floated, the electrical charge in the gate is dissipated through the LPCVD silicon dioxide's surface to the surrounding ground with a time constant depending on the surface conductance which, in turn, varies with humidity. With this method, extremely high sensitivity was achieved—the charge dissipation speed increased thousand times as the relative humidity increased.

  9. Exciton polaritons in one-dimensional metal-semiconductor photonic crystals.

    PubMed

    Márquez-Islas, R; Flores-Desirena, B; Pérez-Rodríguez, F

    2008-12-01

    We investigate theoretically the coupling of exciton with light in a one-dimensional photonic crystal. The unit cell of the crystal consists of two alternating layers, namely a metallic layer and a semiconductor one. The frequency-dependent dielectric function of the metal is described by the Drude model, whereas for the semiconductor we use a nonlocal excitonic dielectric function. The polariton dispersion for s-polarized modes in the metal-semiconductor photonic crystal is compared with that for a dielectric-semiconductor photonic crystal. Because of the metal layers, a low-frequency gap appears in the photonic band structure. The presence of the semiconductor gives rise to photonic bands associated with the coupling of light with size-quantized excitón states. At frequencies above the longitudinal exciton frequency, the photonic band structure exhibits anticrossing phenomena produced by the upper exciton-polariton mode and size-quantized excitons. It is found that the anticrossing phenomena in the metal-semiconductor photonic crystal occur at higher frequencies in comparison with the dielectric-semiconductor case.

  10. Nanostructured target fabrication with metal and semiconductor nanoparticles

    NASA Astrophysics Data System (ADS)

    Barberio, M.; Antici, P.

    2015-10-01

    The development of ultra-intense high-energy (≫1 J) short (<1 ps) laser pulses in the last decade has enabled the acceleration of high-energy short-pulse proton beams. A key parameter for enhancing the acceleration regime is the laser-to-target absorption, which heavily depends on the target structure and material. In this work, we present the realization of a nanostructured target with a sub-laser wavelength nano-layer in the front surface as a possible candidate for improving the absorption. The nanostructured film was realized by a simpler and cheaper method than using conventional lithographic techniques: A colloidal solution of metallic or semiconductor nanoparticles (NPs) was produced by laser ablation and, after a heating and sonication process, was spray-dried on the front surface of an aluminum target. The obtained nanostructured film with a thickness of 1 μm appears, at morphological and chemical analysis, uniformly nanostructured and distributed on the target surface without the presence of oxides or external contaminants. Finally, the size of the NPs can be tuned from tens to hundreds of nanometers simply by varying the growth parameters (i.e., irradiation time, fluence, and laser beam energy).

  11. Ultraviolet random lasing from asymmetrically contacted MgZnO metal-semiconductor-metal device

    SciTech Connect

    Morshed, Muhammad M.; Suja, Mohammad; Zuo, Zheng; Liu, Jianlin

    2014-11-24

    Nitrogen-doped Mg{sub 0.12}Zn{sub 0.88}O nanocrystalline thin film was grown on c-plane sapphire substrate. Asymmetric Ni/Au and Ti/Au Schottky contacts and symmetric Ni/Au contacts were deposited on the thin film to form metal-semiconductor-metal (MSM) laser devices. Current-voltage, photocurrent, and electroluminescence characterizations were performed. Evident random lasing with a threshold current of ∼36 mA is demonstrated only from the asymmetric MSM device. Random lasing peaks are mostly distributed between 340 and 360 nm and an output power of 15 nW is measured at 43 mA injection current. The electron affinity difference between the contact metal and Mg{sub 0.12}Zn{sub 0.88}O:N layer plays an important role for electron and hole injection and subsequent stimulated random lasing.

  12. Rectification and Photoconduction Mapping of Axial Metal-Semiconductor Interfaces Embedded in GaAs Nanowires

    NASA Astrophysics Data System (ADS)

    Orrù, Marta; Piazza, Vincenzo; Rubini, Silvia; Roddaro, Stefano

    2015-10-01

    Semiconductor nanowires have emerged as an important enabling technology and are today used in many advanced device architectures, with an impact both for what concerns fundamental science and in view of future applications. One of the key challenges in the development of nanowire-based devices is the fabrication of reliable nanoscale contacts. Recent developments in the creation of metal-semiconductor junctions by thermal annealing of metallic electrodes offer promising perspectives. Here, we analyze the optoelectronic properties of nano-Schottky barriers obtained thanks to the controlled formation of metallic AuGa regions in GaAs nanowire. The junctions display a rectifying behavior and their transport characteristics are analyzed to extract the average ideality factor and barrier height in the current architecture. The presence, location, and properties of the Schottky junctions are cross-correlated with spatially resolved photocurrent measurements. Broadband light emission is reported in the reverse breakdown regime; this observation, combined with the absence of electroluminescence at forward bias, is consistent with the device unipolar nature.

  13. Reaction-diffusion optoelectronics based on dispersed semiconductors

    NASA Astrophysics Data System (ADS)

    Gradov, O. V.; Gradova, M. A.

    2015-11-01

    Since many dispersed semiconductors are capable of light energy conversion and possess photocatalytic and luminescent properties, and any discreet light-sensitive medium can be applied for the positional-sensitive light flux registration (similar to pixels and voxels in semiconductor-based image recording), the use of chemically active dispersed semiconductors allows to perform a direct signal / image registration based on light-sensitive reaction-diffusion redox systems without conventional CCD / CMOS devices. The image capturing in this case will correspond to the formation of the metastable dissipative structures in the active medium, with their morphological properties determined by the flux gradient and provided by the corresponding dispersed semiconductor medium sensitivity.

  14. GaN metal-semiconductor-metal UV sensor with multi-layer graphene as Schottky electrodes

    NASA Astrophysics Data System (ADS)

    Lee, Chang-Ju; Kang, Sang-Bum; Cha, Hyeon-Gu; Won, Chul-Ho; Hong, Seul-Ki; Cho, Byung-Jin; Park, Hongsik; Lee, Jung-Hee; Hahm, Sung-Ho

    2015-06-01

    We fabricated a GaN-based metal-semiconductor-metal (MSM)-type UV sensor using a multilayer graphene as transparent Schottky electrodes. The fabricated GaN MSM UV sensor showed a high photo-to-dark current contrast ratio of 3.9 × 105 and a UV-to-visible rejection ratio of 1.8 × 103 at 7 V. The as-fabricated GaN MSM UV sensor with graphene electrodes has a low bias dependence of maximum photoresponsivity and a noise-like response at a visible wavelength in the 500 nm region. These problems were successfully solved by treatment with a buffered oxide etcher (BOE), and the photoresponse characteristics of the fabricated GaN MSM UV sensor after the treatment were better than those before the treatment.

  15. Synthesis of a Nano-Silver Metal Ink for Use in Thick Conductive Film Fabrication Applied on a Semiconductor Package

    PubMed Central

    Yung, Lai Chin; Fei, Cheong Choke; Mandeep, JS; Binti Abdullah, Huda; Wee, Lai Khin

    2014-01-01

    The success of printing technology in the electronics industry primarily depends on the availability of metal printing ink. Various types of commercially available metal ink are widely used in different industries such as the solar cell, radio frequency identification (RFID) and light emitting diode (LED) industries, with limited usage in semiconductor packaging. The use of printed ink in semiconductor IC packaging is limited by several factors such as poor electrical performance and mechanical strength. Poor adhesion of the printed metal track to the epoxy molding compound is another critical factor that has caused a decline in interest in the application of printing technology to the semiconductor industry. In this study, two different groups of adhesion promoters, based on metal and polymer groups, were used to promote adhesion between the printed ink and the epoxy molding substrate. The experimental data show that silver ink with a metal oxide adhesion promoter adheres better than silver ink with a polymer adhesion promoter. This result can be explained by the hydroxyl bonding between the metal oxide promoter and the silane grouping agent on the epoxy substrate, which contributes a greater adhesion strength compared to the polymer adhesion promoter. Hypotheses of the physical and chemical functions of both adhesion promoters are described in detail. PMID:24830317

  16. Synthesis of a nano-silver metal ink for use in thick conductive film fabrication applied on a semiconductor package.

    PubMed

    Yung, Lai Chin; Fei, Cheong Choke; Mandeep, Js; Binti Abdullah, Huda; Wee, Lai Khin

    2014-01-01

    The success of printing technology in the electronics industry primarily depends on the availability of metal printing ink. Various types of commercially available metal ink are widely used in different industries such as the solar cell, radio frequency identification (RFID) and light emitting diode (LED) industries, with limited usage in semiconductor packaging. The use of printed ink in semiconductor IC packaging is limited by several factors such as poor electrical performance and mechanical strength. Poor adhesion of the printed metal track to the epoxy molding compound is another critical factor that has caused a decline in interest in the application of printing technology to the semiconductor industry. In this study, two different groups of adhesion promoters, based on metal and polymer groups, were used to promote adhesion between the printed ink and the epoxy molding substrate. The experimental data show that silver ink with a metal oxide adhesion promoter adheres better than silver ink with a polymer adhesion promoter. This result can be explained by the hydroxyl bonding between the metal oxide promoter and the silane grouping agent on the epoxy substrate, which contributes a greater adhesion strength compared to the polymer adhesion promoter. Hypotheses of the physical and chemical functions of both adhesion promoters are described in detail.

  17. Ultrafast dynamics of metal plasmons induced by 2D semiconductor excitons in hybrid nanostructure arrays

    SciTech Connect

    Boulesbaa, Abdelaziz; Babicheva, Viktoriia E.; Wang, Kai; Kravchenko, Ivan I.; Lin, Ming -Wei; Mahjouri-Samani, Masoud; Jacobs, Christopher B.; Puretzky, Alexander A.; Xiao, Kai; Ivanov, Ilia N.; Rouleau, Christopher M.; Geohegan, David B.

    2016-11-17

    With the advanced progress achieved in the field of nanotechnology, localized surface plasmons resonances (LSPRs) are actively considered to improve the efficiency of metal-based photocatalysis, photodetection, and photovoltaics. Here, we report on the exchange of energy and electric charges in a hybrid composed of a two-dimensional tungsten disulfide (2D-WS2) monolayer and an array of aluminum (Al) nanodisks. Femtosecond pump-probe spectroscopy results indicate that within ~830 fs after photoexcitation of the 2D-WS2 semiconductor, energy transfer from the 2D-WS2 excitons excites the plasmons of the Al array. Then, upon the radiative and/or nonradiative damping of these excited plasmons, energy and/or electron transfer back to the 2D-WS2 semiconductor takes place as indicated by an increase in the reflected probe at the 2D exciton transition energies at later time-delays. This simultaneous exchange of energy and charges between the metal and the 2D-WS2 semiconductor resulted in an extension of the average lifetime of the 2D-excitons from ~15 to ~58 ps in absence and presence of the Al array, respectively. Furthermore, the indirectly excited plasmons were found to live as long as the 2D-WS2 excitons exist. Furthermore, the demonstrated ability to generate exciton-plasmons coupling in a hybrid nanostructure may open new opportunities for optoelectronic applications such as plasmonic-based photodetection and photocatalysis.

  18. Equivalent circuit modeling of metal-semiconductor-metal photodiodes with transparent conductor electrodes

    NASA Astrophysics Data System (ADS)

    Rommel, Sean L.; Erby, David N.; Gao, Wei; Berger, Paul R.; Zydzik, George J.; Rhodes, W. W.; O'Bryan, H. M.; Sivco, Deborah L.; Cho, Alfred Y.

    1997-04-01

    Metal-semiconductor-metal (MSM) photodiodes with electrodes fabricated from the transparent conductor cadmium tin oxide (CTO) have been shown to double photoresponsivity. Their bandwidths, however, are significantly lower than those of MSMs fabricated with standard Ti/Au contacts. Though MSMs are generally believed to be limited by the transit time of electrons, it is possible the larger resistivity of CTO has become a significant factor, making the MSMs RC time constant limited instead. Previous models of MSMs only account for one of the two back-to-back Schottky diodes. A new model which takes into account both the forward and reverse biased junctions has been developed from the small signal model of a Schottky diode. This new model was fit to data obtained from S-parameter measurements, and incorporates both the transit time response and RC time constant response.

  19. Metal-semiconductor-metal TiO2 ultraviolet detectors with Ni electrodes

    NASA Astrophysics Data System (ADS)

    Kong, Xiangzi; Liu, Caixia; Dong, Wei; Zhang, Xindong; Tao, Chen; Shen, Liang; Zhou, Jingran; Fei, Yongfeng; Ruan, Shengping

    2009-03-01

    In this letter, metal-semiconductor-metal (MSM) TiO2 ultraviolet (UV) detectors with Ni electrodes have been fabricated. TiO2 thin films were prepared by sol-gel method. At 5 V bias, the dark current of the detector with Ni electrode was 1.83 nA. High photoresponse of 889.6 A/W was found under irradiation of 260 nm UV light, which was much higher than those of other wide bandgap UV detectors with MSM structure. The high photoresponse was due to the great internal gain caused by the hole trapping at interface. The rise time of the device was 13.34 ms and the fall time was 11.43 s.

  20. DOE/BES/NSET annual report on growth of metal and semiconductor nanostructures using localized photocatalysts.

    SciTech Connect

    Haddad, Raid Edward; Brinker, C. Jeffrey; Shelnutt, John Allen; Yang, Yi; Nuttall, H. Eric; Watt, Richard K.; Singl, Anup K.; Challa, Sivakumar R.; Wang, Zhongchun; van Swol, Frank B.; Pereira, Eulalia; Qiu, Yan; Jiang, Ying-Bing; Xu, Huifang; Medforth, Craig J.; Song, Yujiang

    2003-10-01

    Our overall goal is to understand and develop a novel light-driven approach to the controlled growth of unique metal and semiconductor nanostructures and nanomaterials. In this photochemical process, bio-inspired porphyrin-based photocatalysts reduce metal salts in aqueous solutions at ambient temperatures to provide metal nucleation and growth centers. Photocatalyst molecules are pre-positioned at the nanoscale to control the location and morphology of the metal nanostructures grown. Self-assembly, chemical confinement, and molecular templating are some of the methods used for nanoscale positioning of the photocatalyst molecules. When exposed to light, the photocatalyst molecule repeatedly reduces metal ions from solution, leading to deposition and the synthesis of the new nanostructures and nanostructured materials. Studies of the photocatalytic growth process and the resulting nanostructures address a number of fundamental biological, chemical, and environmental issues and draw on the combined nanoscience characterization and multi-scale simulation capabilities of the new DOE Center for Integrated Nanotechnologies, the University of New Mexico, and Sandia National Laboratories. Our main goals are to elucidate the processes involved in the photocatalytic growth of metal nanomaterials and provide the scientific basis for controlled synthesis. The nanomaterials resulting from these studies have applications in nanoelectronics, photonics, sensors, catalysis, and micromechanical systems. The proposed nanoscience concentrates on three thematic research areas: (1) the creation of nanoscale structures for realizing novel phenomena and quantum control, (2) understanding nanoscale processes in the environment, and (3) the development and use of multi-scale, multi-phenomena theory and simulation. Our goals for FY03 have been to understand the role of photocatalysis in the synthesis of dendritic platinum nanostructures grown from aqueous surfactant solutions under ambient

  1. Hybrid plasmonic waveguide consisting of two identical semiconductor nanowires and metal film with semi-cylinder ridges

    NASA Astrophysics Data System (ADS)

    Zhang, Yang; Chen, Lei; Liu, Yumin; Yu, Zhongyuan; Ma, Rui; Ye, Han

    2017-01-01

    In this article, a hybrid plasmonic waveguide (HPW) consisting of a thin metal film sandwiched between two identical cylindrical semiconductor nanowires is proposed and investigated numerically. With two air grooves carved symmetrically on the upper and lower surfaces of the metal film and two nanoscale semi-cylindrical ridges formed, the structured metal film and the semiconductor nanowires are embedded in a low-index silicon-dioxide medium. Based on the finite element method, our simulation results show that the proposed HPW can achieve a propagation length longer than 1000 μm in all circumstances, as well as a mode area as small as 5.21 × 10-4 λ 2, and an excellent figure of merit. The high-performance of the novel HPW may provide theoretical guidance for further research of HPW and related applications in photonic integrated circuits.

  2. Recent progress in III-V based ferromagnetic semiconductors: Band structure, Fermi level, and tunneling transport

    SciTech Connect

    Tanaka, Masaaki; Ohya, Shinobu Nam Hai, Pham

    2014-03-15

    Spin-based electronics or spintronics is an emerging field, in which we try to utilize spin degrees of freedom as well as charge transport in materials and devices. While metal-based spin-devices, such as magnetic-field sensors and magnetoresistive random access memory using giant magnetoresistance and tunneling magnetoresistance, are already put to practical use, semiconductor-based spintronics has greater potential for expansion because of good compatibility with existing semiconductor technology. Many semiconductor-based spintronics devices with useful functionalities have been proposed and explored so far. To realize those devices and functionalities, we definitely need appropriate materials which have both the properties of semiconductors and ferromagnets. Ferromagnetic semiconductors (FMSs), which are alloy semiconductors containing magnetic atoms such as Mn and Fe, are one of the most promising classes of materials for this purpose and thus have been intensively studied for the past two decades. Here, we review the recent progress in the studies of the most prototypical III-V based FMS, p-type (GaMn)As and its heterostructures with focus on tunneling transport, Fermi level, and bandstructure. Furthermore, we cover the properties of a new n-type FMS, (In,Fe)As, which shows electron-induced ferromagnetism. These FMS materials having zinc-blende crystal structure show excellent compatibility with well-developed III-V heterostructures and devices.

  3. Hydrogen Gas Sensors Based on Semiconductor Oxide Nanostructures

    PubMed Central

    Gu, Haoshuang; Wang, Zhao; Hu, Yongming

    2012-01-01

    Recently, the hydrogen gas sensing properties of semiconductor oxide (SMO) nanostructures have been widely investigated. In this article, we provide a comprehensive review of the research progress in the last five years concerning hydrogen gas sensors based on SMO thin film and one-dimensional (1D) nanostructures. The hydrogen sensing mechanism of SMO nanostructures and some critical issues are discussed. Doping, noble metal-decoration, heterojunctions and size reduction have been investigated and proved to be effective methods for improving the sensing performance of SMO thin films and 1D nanostructures. The effect on the hydrogen response of SMO thin films and 1D nanostructures of grain boundary and crystal orientation, as well as the sensor architecture, including electrode size and nanojunctions have also been studied. Finally, we also discuss some challenges for the future applications of SMO nanostructured hydrogen sensors. PMID:22778599

  4. Electrostatic analysis of n-doped SrTiO{sub 3} metal-insulator-semiconductor systems

    SciTech Connect

    Kamerbeek, A. M. Banerjee, T.; Hueting, R. J. E.

    2015-12-14

    Electron doped SrTiO{sub 3}, a complex-oxide semiconductor, possesses novel electronic properties due to its strong temperature and electric-field dependent permittivity. Due to the high permittivity, metal/n-SrTiO{sub 3} systems show reasonably strong rectification even when SrTiO{sub 3} is degenerately doped. Our experiments show that the insertion of a sub nanometer layer of AlO{sub x} in between the metal and n-SrTiO{sub 3} interface leads to a dramatic reduction of the Schottky barrier height (from around 0.90 V to 0.25 V). This reduces the interface resistivity by 4 orders of magnitude. The derived electrostatic analysis of the metal-insulator-semiconductor (n-SrTiO{sub 3}) system is consistent with this trend. When compared with a Si based MIS system, the change is much larger and mainly governed by the high permittivity of SrTiO{sub 3}. The non-linear permittivity of n-SrTiO{sub 3} leads to unconventional properties such as a temperature dependent surface potential non-existent for semiconductors with linear permittivity such as Si. This allows tuning of the interfacial band alignment, and consequently the Schottky barrier height, in a much more drastic way than in conventional semiconductors.

  5. Calculated electronic structures and Néel temperatures of half-metallic diluted antiferromagnetic semiconductors.

    PubMed

    Ogura, M; Takahashi, C; Akai, H

    2007-09-12

    The possibility of half-metallic diluted antiferromagnetic semiconductors of II-VI compounds is investigated on the basis of first-principles electronic structure calculation. The electronic structures of ZnS, ZnSe, ZnO, CdS and CdSe doped with two kinds of 3d transition metal ions are calculated using the Korringa-Kohn-Rostoker (KKR) method and their magnetic transition temperatures are determined using a cluster-type approximation. It is predicted that II-VI compound semiconductors doped with two kinds of magnetic ions might be good candidates for half-metallic antiferromagnets.

  6. Assembling non-ferromagnetic materials to ferromagnetic architectures using metal-semiconductor interfaces

    NASA Astrophysics Data System (ADS)

    Ma, Ji; Liu, Chunting; Chen, Kezheng

    2016-09-01

    In this work, a facile and versatile solution route was used to fabricate room-temperature ferromagnetic fish bone-like, pteridophyte-like, poplar flower-like, cotton-like Cu@Cu2O architectures and golfball-like Cu@ZnO architecture. The ferromagnetic origins in these architectures were found to be around metal-semiconductor interfaces and defects, and the root cause for their ferromagnetism lay in charge transfer processes from metal Cu to semiconductors Cu2O and ZnO. Owing to different metallization at their interfaces, these architectures exhibited different ferromagnetic behaviors, including coercivity, saturation magnetization as well as magnetic interactions.

  7. Assembling non-ferromagnetic materials to ferromagnetic architectures using metal-semiconductor interfaces

    PubMed Central

    Ma, Ji; Liu, Chunting; Chen, Kezheng

    2016-01-01

    In this work, a facile and versatile solution route was used to fabricate room-temperature ferromagnetic fish bone-like, pteridophyte-like, poplar flower-like, cotton-like Cu@Cu2O architectures and golfball-like Cu@ZnO architecture. The ferromagnetic origins in these architectures were found to be around metal-semiconductor interfaces and defects, and the root cause for their ferromagnetism lay in charge transfer processes from metal Cu to semiconductors Cu2O and ZnO. Owing to different metallization at their interfaces, these architectures exhibited different ferromagnetic behaviors, including coercivity, saturation magnetization as well as magnetic interactions. PMID:27680286

  8. Photoluminescence mechanisms of metallic Zn nanospheres, semiconducting ZnO nanoballoons, and metal-semiconductor Zn/ZnO nanospheres

    PubMed Central

    Lin, Jin-Han; Patil, Ranjit A.; Devan, Rupesh S.; Liu, Zhe-An; Wang, Yi-Ping; Ho, Ching-Hwa; Liou, Yung; Ma, Yuan-Ron

    2014-01-01

    We utilized a thermal radiation method to synthesize semiconducting hollow ZnO nanoballoons and metal-semiconductor concentric solid Zn/ZnO nanospheres from metallic solid Zn nanospheres. The chemical properties, crystalline structures, and photoluminescence mechanisms for the metallic solid Zn nanospheres, semiconducting hollow ZnO nanoballoons, and metal-semiconductor concentric solid Zn/ZnO nanospheres are presented. The PL emissions of the metallic Zn solid nanospheres are mainly dependent on the electron transitions between the Fermi level (EF) and the 3d band, while those of the semiconducting hollow ZnO nanoballoons are ascribed to the near band edge (NBE) and deep level electron transitions. The PL emissions of the metal-semiconductor concentric solid Zn/ZnO nanospheres are attributed to the electron transitions across the metal-semiconductor junction, from the EF to the valence and 3d bands, and from the interface states to the valence band. All three nanostructures are excellent room-temperature light emitters. PMID:25382186

  9. Nonvolatile and tunable switching of lateral photo-voltage triggered by laser and electric pulse in metal dusted metal-oxide-semiconductor structures

    PubMed Central

    Zhou, Peiqi; Gan, Zhikai; Huang, Xu; Mei, Chunlian; Huang, Meizhen; Xia, Yuxing; Wang, Hui

    2016-01-01

    Owing to the innate stabilization of built-in potential in p–n junction or metal-oxide-semiconductor structure, the sensitivity and linearity of most lateral photovoltaic effect (LPE) devices is always fixed after fabrication. Here we report a nonvolatile and tunable switching effect of lateral photo-voltage (LPV) in Cu dusted ultrathin metal-oxide-semiconductor structure. With the stimulation of electric pulse and local illumination, the sensitivity and linearity of LPV can be adjusted up and down in a nonvolatile manner. This phenomenon is attributed to a controllable change of the Schottky barrier formed between the metal layer and silicon substrate, including the consequent change of film resistivity. This work may widely improve the performance of existing LPE-based devices and suggest new applications for LPE in other areas. PMID:27535351

  10. Irradiation effects of graphene-enhanced gallium nitride (GaN) metal-semiconductor-metal (MSM) ultraviolet photodetectors

    NASA Astrophysics Data System (ADS)

    Chiamori, Heather C.; Miller, Ruth; Suria, Ateeq; Broad, Nicholas; Senesky, Debbie G.

    2015-05-01

    Ultraviolet (UV) photodetectors are used for applications such as flame detection, space navigation, biomedical and environmental monitoring. Robust operation within large ranges of temperatures, radiation, salinity and/or corrosive chemicals require sensor materials with the ability to withstand and function reliably within these extreme harsh environments. For example, spacecraft can utilize a sun sensor (light-based sensor) to assist with determination of orientation and may be exposed to both ionizing radiation and extreme temperature swings during operation. Gallium nitride (GaN), a wide bandgap semiconductor material, has material properties enabling visible-blindness, tunable cutoff wavelength selection based on ternary alloy mole fraction, high current density, thermal/chemical stability and high radiation tolerance due to the strength of the chemical bond. Graphene, with outstanding electrical, optical and mechanical properties and a flat absorption spectrum from 300 to 2,500 nm, has potential use as a transparent conductor for GaN-based metal-semiconductor-metal (MSM) photodetectors. Here, graphene-enhanced MSM UV photodetectors are fabricated with transparent and conductive graphene interdigitated electrodes on thin film GaN-on-sapphire substrates serving as back-to-back Schottky contacts. We report on the irradiation response of graphene/GaN-based MSM UV photodetectors up to 750 krad total ionizing dose (TID) then tested under dark and UV light (365 nm) conditions. In addition, based on current-voltage measurements from 75 krad to 750 krad TID, calculated photodetector responsivity values change slightly by 25% and 11% at -5 V and -2 V, respectively. These initial findings suggest that graphene/GaN MSM UV photodetectors could potentially be engineered to reliably operate within radiation environments.

  11. Optimal metal domain size for photocatalysis with hybrid semiconductor-metal nanorods

    PubMed Central

    Ben-Shahar, Yuval; Scotognella, Francesco; Kriegel, Ilka; Moretti, Luca; Cerullo, Giulio; Rabani, Eran; Banin, Uri

    2016-01-01

    Semiconductor-metal hybrid nanostructures offer a highly controllable platform for light-induced charge separation, with direct relevance for their implementation in photocatalysis. Advances in the synthesis allow for control over the size, shape and morphology, providing tunability of the optical and electronic properties. A critical determining factor of the photocatalytic cycle is the metal domain characteristics and in particular its size, a subject that lacks deep understanding. Here, using a well-defined model system of cadmium sulfide-gold nanorods, we address the effect of the gold tip size on the photocatalytic function, including the charge transfer dynamics and hydrogen production efficiency. A combination of transient absorption, hydrogen evolution kinetics and theoretical modelling reveal a non-monotonic behaviour with size of the gold tip, leading to an optimal metal domain size for the most efficient photocatalysis. We show that this results from the size-dependent interplay of the metal domain charging, the relative band-alignments, and the resulting kinetics. PMID:26783194

  12. Geometrically enhanced extraordinary magnetoresistance in semiconductor-metal hybrids

    NASA Astrophysics Data System (ADS)

    Hewett, T. H.; Kusmartsev, F. V.

    2010-12-01

    Extraordinary magnetoresistance (EMR) arises in hybrid systems consisting of semiconducting material with an embedded metallic inclusion. We have investigated such systems with the use of finite-element modeling, with our results showing good agreement to existing experimental data. We show that this effect can be dramatically enhanced by over four orders of magnitude as a result of altering the geometry of the conducting region. The significance of this result lies in its potential application to EMR magnetic field sensors utilizing more familiar semiconducting materials with nonoptimum material parameters, such as silicon. Our model has been extended further with a geometry based on the microstructure of the silver chalcogenides, consisting of a randomly sized and positioned metallic network with interspersed droplets. This model has shown a large and quasilinear magnetoresistance analogous to experimental findings.

  13. Thiazole-based organic semiconductors for organic electronics.

    PubMed

    Lin, Yuze; Fan, Haijun; Li, Yongfang; Zhan, Xiaowei

    2012-06-19

    Over the past two decades, organic semiconductors have been the subject of intensive academic and commercial interests. Thiazole is a common electron-accepting heterocycle due to electron-withdrawing nitrogen of imine (C=N), several moieties based on thiazole have been widely introduced into organic semiconductors, and yielded high performance in organic electronic devices. This article reviews recent developments in the area of thiazole-based organic semiconductors, particularly thiazole, bithiazole, thiazolothiazole and benzobisthiazole-based small molecules and polymers, for applications in organic field-effect transistors, solar cells and light-emitting diodes. The remaining problems and challenges, and the key research direction in near future are discussed.

  14. Biological semiconductor based on electrical percolation.

    PubMed

    Yang, Minghui; Bruck, Hugh Alan; Kostov, Yordan; Rasooly, Avraham

    2010-05-01

    We have developed a novel biological semiconductor (BSC) based on electrical percolation through a multilayer three-dimensional carbon nanotube-antibody bionanocomposite network, which can measure biological interactions directly and electronically. In electrical percolation, the passage of current through the conductive network is dependent upon the continuity of the network. Molecular interactions, such as binding of antigens to the antibodies, disrupt the network continuity causing increased resistance of the network. A BSC is fabricated by immobilizing a prefunctionalized single-walled carbon nanotubes (SWNTs)-antibody bionanocomposite directly on a poly(methyl methacrylate) (PMMA) surface (also known as plexiglass or acrylic). We used the BSC for direct (label-free) electronic measurements of antibody-antigen binding, showing that, at slightly above the electrical percolation threshold of the network, binding of a specific antigen dramatically increases the electrical resistance. Using anti-staphylococcal enterotoxin B (SEB) IgG as a "gate" and SEB as an "actuator", we demonstrated that the BSC was able to detect SEB at concentrations of 1 ng/mL. The new BSCs may permit assembly of multiple sensors on the same chip to create "biological central processing units (CPUs)" with multiple BSC elements, capable of processing and sorting out information on multiple analytes simultaneously.

  15. Enhancement of superconductivity near the pressure-induced semiconductor-metal transition in the BiS₂-based superconductors LnO₀.₅F₀.₅BiS₂ (Ln = La, Ce, Pr, Nd).

    PubMed

    Wolowiec, C T; White, B D; Jeon, I; Yazici, D; Huang, K; Maple, M B

    2013-10-23

    Measurements of electrical resistivity were performed between 3 and 300 K at various pressures up to 2.8 GPa on the BiS2-based superconductors LnO0.5F0.5BiS2 (Ln=Pr, Nd). At lower pressures, PrO0.5F0.5BiS2 and NdO0.5F0.5BiS2 exhibit superconductivity with critical temperatures Tc of 3.5 and 3.9 K, respectively. As pressure is increased, both compounds undergo a transition at a pressure Pt from a low Tc superconducting phase to a high Tc superconducting phase in which Tc reaches maximum values of 7.6 and 6.4 K for PrO0.5F0.5BiS2 and NdO0.5F0.5BiS2, respectively. The pressure-induced transition is characterized by a rapid increase in Tc within a small range in pressure of ∼0.3 GPa for both compounds. In the normal state of PrO0.5F0.5BiS2, the transition pressure Pt correlates with the pressure where the suppression of semiconducting behaviour saturates. In the normal state of NdO0.5F0.5BiS2, Pt is coincident with a semiconductor-metal transition. This behaviour is similar to the results recently reported for the LnO0.5F0.5BiS2 (Ln=La, Ce) compounds. We observe that Pt and the size of the jump in Tc between the two superconducting phases both scale with the lanthanide element in LnO0.5F0.5BiS2 (Ln=La, Ce, Pr, Nd).

  16. Nanogranular metallic Fe oxygen deficient TiO2-δ composite films: a room temperature, highly carrier polarized magnetic semiconductor

    NASA Astrophysics Data System (ADS)

    Yoon, S. D.; Widom, A.; Miller, K. E.; McHenry, M. E.; Vittoria, C.; Harris, V. G.

    2008-05-01

    Nanogranular metallic iron (Fe) and titanium dioxide (TiO2-δ) were sequentially deposited on (100) lanthanum aluminate (LaAlO3) substrates in a low oxygen chamber pressure using a pulsed laser ablation deposition (PLD) technique. By sequential deposition, ≈10 nm diameter metallic Fe spherical grains were suspended within a TiO2-δ matrix. The films show ferromagnetic behavior with a saturation magnetization of 3100 G at room temperature. Our estimate of the saturation magnetization based on the size and distribution of the Fe spheres agreed with the measured value. The film composite structure was characterized as a p-type magnetic semiconductor at 300 K with a carrier density of the order of ≈1022 cm-3. The hole carriers were excited at the interface between the nanogranular Fe and TiO2-δ matrix, similar to holes excited in the metal/n-type semiconductor interface commonly observed in metal-oxide-semiconductor (MOS) devices. From the large anomalous Hall effect measured in these films, we observed that the holes at the interface were strongly spin polarized. Structure and magnetotransport properties suggested that these PLD films have potential spintronics applications.

  17. Moderate bending strain induced semiconductor to metal transition in Si nanowires

    NASA Astrophysics Data System (ADS)

    Rabbani, M. Golam; Patil, Sunil R.; Anantram, M. P.

    2016-12-01

    A moderate amount of bending strains, ∼3% is found to be enough to induce the semiconductor-metal transition in Si nanowires of ∼4 nm diameter. The influence of bending on silicon nanowires of 1 nm to 4.3 nm diameter is investigated using molecular dynamics and quantum transport simulations. Local strains in nanowires are analyzed along with the effect of bending strain and nanowire diameter on electronic transport and the transmission energy gap. Interestingly, relatively wider nanowires are found to undergo semiconductor-metal transition at relatively lower bending strains. The effect of bending strain on electronic properties is then compared with the conventional way of straining, i.e. uniaxial, which shows that bending is a much more efficient way of straining to enhance the electronic transport and also to induce the semiconductor-metal transition in experimentally realizable Si nanowires.

  18. Enhanced optical properties of germanate and tellurite glasses containing metal or semiconductor nanoparticles.

    PubMed

    de Araujo, Cid Bartolomeu; Silvério da Silva, Diego; Alves de Assumpção, Thiago Alexandre; Kassab, Luciana Reyes Pires; Mariano da Silva, Davinson

    2013-01-01

    Germanium- and tellurium-based glasses have been largely studied due to their recognized potential for photonics. In this paper, we review our recent studies that include the investigation of the Stokes and anti-Stokes photoluminescence (PL) in different glass systems containing metallic and semiconductor nanoparticles (NPs). In the case of the samples with metallic NPs, the enhanced PL was attributed to the increased local field on the rare-earth ions located in the proximity of the NPs and/or the energy transfer from the metallic NPs to the rare-earth ions. For the glasses containing silicon NPs, the PL enhancement was mainly due to the energy transfer from the NPs to the Er(3+) ions. The nonlinear (NL) optical properties of PbO-GeO2 films containing gold NPs were also investigated. The experiments in the pico- and subpicosecond regimes revealed enhanced values of the NL refractive indices and large NL absorption coefficients in comparison with the films without gold NPs. The reported experiments demonstrate that germanate and tellurite glasses, having appropriate rare-earth ions doping and NPs concentration, are strong candidates for PL-based devices, all-optical switches, and optical limiting.

  19. Surface plasmon based engineering of semiconductor nanowire optics

    NASA Astrophysics Data System (ADS)

    Aspetti, Carlos Octavio

    Semiconductor nanowires combine the material properties of semiconductors, which are ubiquitous in modern technology, with nanoscale dimensions and as such, are firmly poised at the forefront of nanotechnology research. The rich physics of semiconductor nanowire optics, in particular, arises from the increased interaction between light and matter that occurs when light is confined to dimensions below the size of its wavelength, in other words, when the nanowire serves as a light trapping optical cavity, which itself is also a source of light. Light confinement is taken to new extremes by coupling to the surface plasmon modes of metallic nanostructures, where light acquires mixed photonic and electronic character, and which may focus light to deep-subwavelength regions amenable to the dimensions of the electron wave. This thesis examines how the integration of "plasmonic optical cavities" and semiconductor nanowires leads to substantial modification (and enhancement) of the optical properties of the same, resulting in orders-of-magnitude faster and more efficient light emission with colors that may be tuned as a function of optical cavity geometry. Furthermore, this method is applied to nanowires composed of both direct and indirect bandgap semiconductor materials resulting in applications such as light emission from high-energy states in light emitting materials, highly enhanced broadband light emission from nominally non-light emitting (dark) materials, and broadband (and anomalous) enhancement of light absorption in various materials, all the while maintaining the unifying theme of employing integrated plasmonic-semiconductor optical cavities to achieve tailored optical properties. We begin with a review of the electromagnetic properties of optical cavities, surface plasmon-enhanced light emission in semiconductors, and the key physical properties of semiconductor nanowires. It goes without saying that this thesis work resides at the interface between optical

  20. Control of excitonic population inversion in a coupled semiconductor quantum dot-metal nanoparticle system

    NASA Astrophysics Data System (ADS)

    Paspalakis, Emmanuel; Evangelou, Sofia; Terzis, Andreas F.

    2013-06-01

    We study the potential for controlled population inversion in a coupled system comprised of a semiconductor quantum dot and a metal nanoparticle. We show that the widely used method of population inversion by a π pulse can be modified for small interparticle distances. This modification depends strongly on the pulse duration. We also present analytical solutions of the nonlinear density matrix equations, for specific pulse envelopes, which lead to efficient excitonic population inversion in the quantum dot for several distances between the semiconductor quantum dot and the metal nanoparticle.

  1. Reaction Current Phenomenon in Bifunctional Catalytic Metal-Semiconductor Nanostructures

    NASA Astrophysics Data System (ADS)

    Hashemian, Mohammad Amin

    Energy transfer processes accompany every elementary step of catalytic chemical processes on material surface including molecular adsorption and dissociation on atoms, interactions between intermediates, and desorption of reaction products from the catalyst surface. Therefore, detailed understanding of these processes on the molecular level is of great fundamental and practical interest in energy-related applications of nanomaterials. Two main mechanisms of energy transfer from adsorbed particles to a surface are known: (i) adiabatic via excitation of quantized lattice vibrations (phonons) and (ii) non-adiabatic via electronic excitations (electron/hole pairs). Electronic excitations play a key role in nanocatalysis, and it was recently shown that they can be efficiently detected and studied using Schottky-type catalytic nanostructures in the form of measureable electrical currents (chemicurrents) in an external electrical circuit. These nanostructures typically contain an electrically continuous nanocathode layers made of a catalytic metal deposited on a semiconductor substrate. The goal of this research is to study the direct observations of hot electron currents (chemicurrents) in catalytic Schottky structures, using a continuous mesh-like Pt nanofilm grown onto a mesoporous TiO2 substrate. Such devices showed qualitatively different and more diverse signal properties, compared to the earlier devices using smooth substrates, which could only be explained on the basis of bifunctionality. In particular, it was necessary to suggest that different stages of the reaction are occurring on both phases of the catalytic structure. Analysis of the signal behavior also led to discovery of a formerly unknown (very slow) mode of the oxyhydrogen reaction on the Pt/TiO2(por) system occurring at room temperature. This slow mode was producing surprisingly large stationary chemicurrents in the range 10--50 microA/cm2. Results of the chemicurrent measurements for the bifunctional

  2. The friction behavior of semiconductors Si and GaAs in contact with pure metals

    NASA Technical Reports Server (NTRS)

    Mishina, H.

    1984-01-01

    The friction behavior of the semiconductors silicon and gallium arsenide in contact with pure metals was studied. Five transition and two nontransition metals, titanium, tantalum, nickel, palladium, platinum, copper, and silver, slid on a single crystal silicon (111) surface. Four metals, indium, nickel, copper and silver, slid on a single crystal gallium arsenide (100) surface. Experiments were conducted in room air and in a vacuum of 10 to the minus 7th power N/sq cm (10 to the minus 9th power torr). The results indicate that the sliding of silicon on the transition metals exhibits relatively higher friction than for the nontransition metals in contact with silicon. There is a clear correlation between friction and Schottky barrier height formed at the metal silicon interface for the transition metals. Transition metals with a higher barrier height on silicon had a lower friction. The same effect of barrier height was found for the friction of gallium arsenide in contact with metals.

  3. Photoconduction efficiencies of metal oxide semiconductor nanowires: The material's inherent properties

    NASA Astrophysics Data System (ADS)

    Chen, R. S.; Wang, W. C.; Chan, C. H.; Lu, M. L.; Chen, Y. F.; Lin, H. C.; Chen, K. H.; Chen, L. C.

    2013-11-01

    The photoconduction (PC) efficiencies of various single-crystalline metal oxide semiconductor nanowires (NWs) have been investigated and compared based on the materials' inherent properties. The defined PC efficiency (normalized gain) of SnO2 NWs is over one to five orders of magnitude higher than that of its highly efficient counterparts such as ZnO, TiO2, WO3, and GaN. The inherent property of the material allowed the photoconductive gain of an SnO2 single-NW photodetector to easily reach 8 × 108 at a low bias of 3.0 V and a low light intensity of 0.05 Wm-2, which is the optimal reported value so far for the single-NW photodetectors. The probable physical origins, such as charged surface state density and surface band bending, that caused the differences in PC efficiencies and carrier lifetimes are also discussed.

  4. Si nanowire metal-insulator-semiconductor photodetectors as efficient light harvesters.

    PubMed

    Bae, Joonho; Kim, Hyunjin; Zhang, Xiao-Mei; Dang, Cuong H; Zhang, Yue; Choi, Young Jin; Nurmikko, Arto; Wang, Zhong Lin

    2010-03-05

    Novel ITO-Si nanowire (NW) metal-insulator-semiconductor (MIS) photodetectors were fabricated by using n-type Si NWs as detection units and ITO films as top gate electrodes. Measurements on the Si NW based device reveal a significant photoresponse, including photocurrent generation with an external quantum efficiency (EQE) of approximately 35% at a peak wavelength of 600 nm at zero external bias, and with an EQE of 70% at a peak wavelength of 800 nm at - 0.5 V bias. The NW device shows a flat and low reflectance and almost constant EQE up to a 60 degrees incident angle of illumination, demonstrating efficient visible-light harvesting by the Si NW antenna.

  5. Flexible complementary metal oxide semiconductor microelectrode arrays with applications in single cell characterization

    NASA Astrophysics Data System (ADS)

    Pajouhi, H.; Jou, A. Y.; Jain, R.; Ziabari, A.; Shakouri, A.; Savran, C. A.; Mohammadi, S.

    2015-11-01

    A highly flexible microelectrode array with an embedded complementary metal oxide semiconductor (CMOS) instrumentation amplifier suitable for sensing surfaces of biological entities is developed. The array is based on ultrathin CMOS islands that are thermally isolated from each other and are interconnected by meandered nano-scale wires that can adapt to cellular surfaces with micro-scale curvatures. CMOS temperature sensors are placed in the islands and are optimally biased to have high temperature sensitivity. While no live cell thermometry is conducted, a measured temperature sensitivity of 0.15 °C in the temperature range of 35 to 40 °C is achieved by utilizing a low noise CMOS lock-in amplifier implemented in the same technology. The monolithic nature of CMOS sensors and amplifier circuits and their versatile flexible interconnecting wires overcome the sensitivity and yield limitations of microelectrode arrays fabricated in competing technologies.

  6. Semiconductor nanostructure-based photovoltaic solar cells.

    PubMed

    Zhang, Genqiang; Finefrock, Scott; Liang, Daxin; Yadav, Gautam G; Yang, Haoran; Fang, Haiyu; Wu, Yue

    2011-06-01

    Substantial efforts have been devoted to design, synthesize, and integrate various semiconductor nanostructures for photovoltaic (PV) solar cells. In this article, we will review the recent progress in this exciting area and cover the material chemistry and physics related to all-inorganic nanostructure solar cells, hybrid inorganic nanostructure-conductive polymer composite solar cells, and dye-sensitized solar cells.

  7. Semiconductor nanostructure-based photovoltaic solar cells

    NASA Astrophysics Data System (ADS)

    Zhang, Genqiang; Finefrock, Scott; Liang, Daxin; Yadav, Gautam G.; Yang, Haoran; Fang, Haiyu; Wu, Yue

    2011-06-01

    Substantial efforts have been devoted to design, synthesize, and integrate various semiconductor nanostructures for photovoltaic (PV) solar cells. In this article, we will review the recent progress in this exciting area and cover the material chemistry and physics related to all-inorganic nanostructure solar cells, hybrid inorganic nanostructure-conductive polymer composite solar cells, and dye-sensitized solar cells.

  8. Transition-Metal Substitution Doping in Synthetic Atomically Thin Semiconductors.

    PubMed

    Gao, Jian; Kim, Young Duck; Liang, Liangbo; Idrobo, Juan Carlos; Chow, Phil; Tan, Jiawei; Li, Baichang; Li, Lu; Sumpter, Bobby G; Lu, Toh-Ming; Meunier, Vincent; Hone, James; Koratkar, Nikhil

    2016-11-01

    Large-area "in situ" transition-metal substitution doping for chemical-vapor-deposited semiconducting transition-metal-dichalcogenide monolayers deposited on dielectric substrates is demonstrated. In this approach, the transition-metal substitution is stable and preserves the monolayer's semiconducting nature, along with other attractive characteristics, including direct-bandgap photoluminescence.

  9. Charge transport in nanoscale "all-inorganic" networks of semiconductor nanorods linked by metal domains.

    PubMed

    Lavieville, Romain; Zhang, Yang; Casu, Alberto; Genovese, Alessandro; Manna, Liberato; Di Fabrizio, Enzo; Krahne, Roman

    2012-04-24

    Charge transport across metal-semiconductor interfaces at the nanoscale is a crucial issue in nanoelectronics. Chains of semiconductor nanorods linked by Au particles represent an ideal model system in this respect, because the metal-semiconductor interface is an intrinsic feature of the nanosystem and does not manifest solely as the contact to the macroscopic external electrodes. Here we investigate charge transport mechanisms in all-inorganic hybrid metal-semiconductor networks fabricated via self-assembly in solution, in which CdSe nanorods were linked to each other by Au nanoparticles. Thermal annealing of our devices changed the morphology of the networks and resulted in the removal of small Au domains that were present on the lateral nanorod facets, and in ripening of the Au nanoparticles in the nanorod junctions with more homogeneous metal-semiconductor interfaces. In such thermally annealed devices the voltage dependence of the current at room temperature can be well described by a Schottky barrier lowering at a metal semiconductor contact under reverse bias, if the spherical shape of the gold nanoparticles is considered. In this case the natural logarithm of the current does not follow the square-root dependence of the voltage as in the bulk, but that of V(2/3). From our fitting with this model we extract the effective permittivity that agrees well with theoretical predictions for the permittivity near the surface of CdSe nanorods. Furthermore, the annealing improved the network conductance at cryogenic temperatures, which could be related to the reduction of the number of trap states.

  10. Alloyed 2D Metal-Semiconductor Atomic Layer Junctions.

    PubMed

    Kim, Ah Ra; Kim, Yonghun; Nam, Jaewook; Chung, Hee-Suk; Kim, Dong Jae; Kwon, Jung-Dae; Park, Sang Won; Park, Jucheol; Choi, Sun Young; Lee, Byoung Hun; Park, Ji Hyeon; Lee, Kyu Hwan; Kim, Dong-Ho; Choi, Sung Mook; Ajayan, Pulickel M; Hahm, Myung Gwan; Cho, Byungjin

    2016-03-09

    Heterostructures of compositionally and electronically variant two-dimensional (2D) atomic layers are viable building blocks for ultrathin optoelectronic devices. We show that the composition of interfacial transition region between semiconducting WSe2 atomic layer channels and metallic NbSe2 contact layers can be engineered through interfacial doping with Nb atoms. WxNb1-xSe2 interfacial regions considerably lower the potential barrier height of the junction, significantly improving the performance of the corresponding WSe2-based field-effect transistor devices. The creation of such alloyed 2D junctions between dissimilar atomic layer domains could be the most important factor in controlling the electronic properties of 2D junctions and the design and fabrication of 2D atomic layer devices.

  11. Effect of realistic metal electronic structure on the lower limit of contact resistivity of epitaxial metal-semiconductor contacts

    SciTech Connect

    Hegde, Ganesh Chris Bowen, R.

    2014-08-04

    The effect of realistic metal electronic structure on the lower limit of resistivity in [100] oriented n-Si is investigated using full band Density Functional Theory and Semi-Empirical Tight Binding calculations. It is shown that the “ideal metal” assumption may fail in some situations and, consequently, underestimate the lower limit of contact resistivity in n-Si by at least an order of magnitude at high doping concentrations. The mismatch in transverse momentum space in the metal and the semiconductor, the so-called “valley filtering effect,” is shown to be sensitive to the details of the transverse boundary conditions for the unit cells used. The results emphasize the need for explicit inclusion of the metal atomic and electronic structure in the atomistic modeling of transport across metal-semiconductor contacts.

  12. Two-Dimensional Semiconductor Optoelectronics Based on van der Waals Heterostructures

    PubMed Central

    Lee, Jae Yoon; Shin, Jun-Hwan; Lee, Gwan-Hyoung; Lee, Chul-Ho

    2016-01-01

    Two-dimensional (2D) semiconductors such as transition metal dichalcogenides (TMDCs) and black phosphorous have drawn tremendous attention as an emerging optical material due to their unique and remarkable optical properties. In addition, the ability to create the atomically-controlled van der Waals (vdW) heterostructures enables realizing novel optoelectronic devices that are distinct from conventional bulk counterparts. In this short review, we first present the atomic and electronic structures of 2D semiconducting TMDCs and their exceptional optical properties, and further discuss the fabrication and distinctive features of vdW heterostructures assembled from different kinds of 2D materials with various physical properties. We then focus on reviewing the recent progress on the fabrication of 2D semiconductor optoelectronic devices based on vdW heterostructures including photodetectors, solar cells, and light-emitting devices. Finally, we highlight the perspectives and challenges of optoelectronics based on 2D semiconductor heterostructures. PMID:28335321

  13. Plasmonic effect-enhanced Ag nanodisk incorporated ZnO/Si metal-semiconductor-metal photodetectors

    NASA Astrophysics Data System (ADS)

    Kumar, Manjeet; Kojori, Hossein Shokri; Kim, Sung Jin; Park, Hyeong-Ho; Kim, Joondong; Yun, Ju-Hyung

    2016-10-01

    In this work, we present the enhancement of ultraviolet (UV) photodetection of Ag-ZnO thin film deposited by radio frequency magnetron sputtering. The surface morphological, optical, structural, and electrical properties of the deposited thin films were investigated by various characterization techniques. With this Ag-ZnO thin film structure and proper geometry of metal-semiconductor-metal (MSM) interdigitated structure design, photocurrent enhancement has been accomplished. MSM-photodetectors (PDs) using structures of Ag-ZnO gave a 30 times higher magnitude photocurrent at 340 nm of the wavelength. Plasmon-induced hot electrons contributed to improved spectral response to the UV region, while absorption and scattering effect enhanced broadband improvement to a response in the VIS-IR spectrum range. The improvement of Ag-ZnO PD in comparison with ZnO is attributed to the surface plasmon effect using Ag nanodisks. These results indicate that Ag-ZnO thin films can serve as excellent ultraviolet-PD and a very promising candidate for practical applications.

  14. Study of gain phenomenon in lateral metal-semiconductor-metal detectors for indirect conversion medical imaging

    NASA Astrophysics Data System (ADS)

    Abbaszadeh, Shiva; Allec, Nicholas; Wang, Kai; Chen, Feng; Karim, Karim S.

    2011-03-01

    Previously, metal-semiconductor-metal (MSM) lateral amorphous selenium (a-Se) detectors have been proposed for indirect detector medical imaging applications. These detectors have raised interest due to their high-speed and photogain. The gain measured from these devices was assumed to have been photoconductive gain; however the origin of this gain was not fully understood. In addition, whether or not there was any presence of photocurrent multiplication gain was not investigated. For integration-type applications photocurrent multiplication gain is desirable since the total collected charge can be greater than the total number of absorbed photons. In order to fully appreciate the value of MSM devices and their benefit for different applications, whether it is counting or integration applications, we need to investigate the responsible mechanisms of the observed response. In this paper, we systematically study, through experimental and theoretical means, the nature of the photoresponse and its responsible mechanisms. This study also exposes the possible means to increase the performance of the device and under what conditions it will be most beneficial.

  15. Long-term research in Japan: amorphous metals, metal oxide varistors, high-power semiconductors and superconducting generators

    SciTech Connect

    Hane, G.J.; Yorozu, M.; Sogabe, T.; Suzuki, S.

    1985-04-01

    The review revealed that significant activity is under way in the research of amorphous metals, but that little fundamental work is being pursued on metal oxide varistors and high-power semiconductors. Also, the investigation of long-term research program plans for superconducting generators reveals that activity is at a low level, pending the recommendations of a study currently being conducted through Japan's Central Electric Power Council.

  16. Semiconductor photoelectrochemistry

    NASA Technical Reports Server (NTRS)

    Buoncristiani, A. M.; Byvik, C. E.

    1983-01-01

    Semiconductor photoelectrochemical reactions are investigated. A model of the charge transport processes in the semiconductor, based on semiconductor device theory, is presented. It incorporates the nonlinear processes characterizing the diffusion and reaction of charge carriers in the semiconductor. The model is used to study conditions limiting useful energy conversion, specifically the saturation of current flow due to high light intensity. Numerical results describing charge distributions in the semiconductor and its effects on the electrolyte are obtained. Experimental results include: an estimate rate at which a semiconductor photoelectrode is capable of converting electromagnetic energy into chemical energy; the effect of cell temperature on the efficiency; a method for determining the point of zero zeta potential for macroscopic semiconductor samples; a technique using platinized titanium dioxide powders and ultraviolet radiation to produce chlorine, bromine, and iodine from solutions containing their respective ions; the photoelectrochemical properties of a class of layered compounds called transition metal thiophosphates; and a technique used to produce high conversion efficiency from laser radiation to chemical energy.

  17. Optical Design of Plant Canopy Measurement System and Fabrication of Two-Dimensional High-Speed Metal-Semiconductor-Metal Photodetector Arrays

    NASA Technical Reports Server (NTRS)

    Sarto, Anthony; VanZeghbroeck, Bart; Vanderbilt, Vern C.

    1996-01-01

    Electrical and optical designs for the prototype plant canopy architecture measurement system, including specified component and parts lists, are presented. Six single Metal-Semiconductor-Metal (MSM) detectors are mounted in high-speed packages.

  18. Observation of quantum oscillation of work function in ultrathin-metal/semiconductor junctions

    SciTech Connect

    Takhar, Kuldeep; Meer, Mudassar; Khachariya, Dolar; Ganguly, Swaroop; Saha, Dipankar

    2015-09-15

    Quantization in energy level due to confinement is generally observed for semiconductors. This property is used for various quantum devices, and it helps to improve the characteristics of conventional devices. Here, the authors have demonstrated the quantum size effects in ultrathin metal (Ni) layers sandwiched between two large band-gap materials. The metal work function is found to oscillate as a function of its thickness. The thermionic emission current bears the signature of the oscillating work function, which has a linear relationship with barrier heights. This methodology allows direct observation of quantum oscillations in metals at room temperature using a Schottky diode and electrical measurements using source-measure-units. The observed phenomena can provide additional mechanism to tune the barrier height of metal/semiconductor junctions, which are used for various electronic devices.

  19. Low resistance barrier layer for isolating, adhering, and passivating copper metal in semiconductor fabrication

    DOEpatents

    Weihs, Timothy P.; Barbee, Jr., Troy W.

    2002-01-01

    Cubic or metastable cubic refractory metal carbides act as barrier layers to isolate, adhere, and passivate copper in semiconductor fabrication. One or more barrier layers of the metal carbide are deposited in conjunction with copper metallizations to form a multilayer characterized by a cubic crystal structure with a strong (100) texture. Suitable barrier layer materials include refractory transition metal carbides such as vanadium carbide (VC), niobium carbide (NbC), tantalum carbide (TaC), chromium carbide (Cr.sub.3 C.sub.2), tungsten carbide (WC), and molybdenum carbide (MoC).

  20. Unimolecular, soluble semiconductor nanoparticle-based biosensors for thrombin using charge/electron transfer.

    PubMed

    Swain, Marla D; Octain, Jashain; Benson, David E

    2008-12-01

    Duplex DNA was attached to semiconductor nanoparticles providing selective detection of thrombin. Using the method reported here, semiconductor nanoparticles can have selective sensory functions for a host of additional analytes in the future. The system uses one DNA strand that selectively binds an analyte (thrombin), while the complementary DNA strand contains a redox-active metal complex. The accessibility of the metal complex to the nanoparticle surface is increased upon thrombin binding due to unravelling of the duplex DNA secondary structure. Increased interactions between the metal complex and the nanoparticle surface will decrease nanoparticle emission intensity, through charge transfer. Initially, water-soluble nanoparticles with carboxylate-terminated monolayers showed thrombin-specific responses in emission intensity (-30% for 1:1 nanoparticle to DNA, +50% for 1:5). Despite the selective responses, the thrombin binding isotherms indicated multiple binding equilibria and more than likely nanoparticle aggregation. The need for a nonaggregative system comes from the potential employment of these sensors in live cell or living system fluorescence assays. By changing the nanoparticle capping ligand to provide an ethylene glycol-terminated monolayer, the binding isotherms fit a two-state binding model with a thrombin dissociation constant of 3 nM in a physiologically relevant buffer. This article demonstrates the need to consider capping ligand effects in designing biosensors based on semiconductor nanoparticles and demonstrates an initial DNA-attached semiconductor nanoparticle system that uses DNA-analyte binding interactions (aptamers).

  1. Formation of heteroepitaxy in different shapes of Au-CdSe metal-semiconductor hybrid nanostructures.

    PubMed

    Haldar, Krishna Kanta; Pradhan, Narayan; Patra, Amitava

    2013-10-25

    Formation of heteroepitaxy and designing different-shaped heterostructured nanomaterials of metal and semiconductor in solution remains a frontier area of research. However, it is evident that the synthesis of such materials is not straightforward and needs a selective approach to retain both metal and semiconductor identities in the reaction system during heterostructure formation. Herein, the epitaxial growth of semiconductor CdSe on selected facets of metal Au seeds is reported and different shapes (flower, tetrapod, and core/shell) hetero-nanostructures are designed. These results are achieved by controlling the reaction parameters, and by changing the sequence and timing for introduction of different reactant precursors. Direct evidence of the formation of heteroepitaxy between {111} facets of Au and (0001) of wurtzite CdSe is observed during the formation of these three heterostructures. The mechanism of the evolution of these hetero-nanostructures and formation of their heteroepitaxy with the planes having minimum lattice mismatch are also discussed. This shape-control growth mechanism in hetero-nanostructures should be helpful to provide more information for establishing the fundamental study of heteroepitaxial growth for designing new nanomaterials. Such metal-semiconductor nanostructures may have great potential for nonlinear optical properties, in photovoltaic devices, and as chemical sensors.

  2. Thermoelectric figure of merit of a material consisting of semiconductor or metal particles

    SciTech Connect

    Kharlamov, V. F.

    2013-07-15

    It is found that the dimensionless thermoelectric figure of merit of a material consisting of a large number of ball-shaped semiconductor or metal particles can be much more than unity. The introduction of an insulator into the space between the particles is shown to sharply increase the power of the converter of heat energy into electric current energy.

  3. Doped semiconductor nanocrystal based fluorescent cellular imaging probes.

    PubMed

    Maity, Amit Ranjan; Palmal, Sharbari; Basiruddin, S K; Karan, Niladri Sekhar; Sarkar, Suresh; Pradhan, Narayan; Jana, Nikhil R

    2013-06-21

    Doped semiconductor nanocrystals such as Mn doped ZnS, Mn doped ZnSe and Cu doped InZnS, are considered as new classes of fluorescent biological probes with low toxicity. Although the synthesis in high quality of such nanomaterials is now well established, transforming them into functional fluorescent probes remains a challenge. Here we report a fluorescent cellular imaging probe made of high quality doped semiconductor nanocrystals. We have identified two different coating approaches suitable for transforming the as synthesized hydrophobic doped semiconductor nanocrystals into water-soluble functional nanoparticles. Following these approaches we have synthesized TAT-peptide- and folate-functionalized nanoparticles of 10-80 nm hydrodynamic diameter and used them as a fluorescent cell label. The results shows that doped semiconductor nanocrystals can be an attractive alternative for conventional cadmium based quantum dots with low toxicity.

  4. Doped semiconductor nanocrystal based fluorescent cellular imaging probes

    NASA Astrophysics Data System (ADS)

    Maity, Amit Ranjan; Palmal, Sharbari; Basiruddin, Sk; Karan, Niladri Sekhar; Sarkar, Suresh; Pradhan, Narayan; Jana, Nikhil R.

    2013-05-01

    Doped semiconductor nanocrystals such as Mn doped ZnS, Mn doped ZnSe and Cu doped InZnS, are considered as new classes of fluorescent biological probes with low toxicity. Although the synthesis in high quality of such nanomaterials is now well established, transforming them into functional fluorescent probes remains a challenge. Here we report a fluorescent cellular imaging probe made of high quality doped semiconductor nanocrystals. We have identified two different coating approaches suitable for transforming the as synthesized hydrophobic doped semiconductor nanocrystals into water-soluble functional nanoparticles. Following these approaches we have synthesized TAT-peptide- and folate-functionalized nanoparticles of 10-80 nm hydrodynamic diameter and used them as a fluorescent cell label. The results shows that doped semiconductor nanocrystals can be an attractive alternative for conventional cadmium based quantum dots with low toxicity.Doped semiconductor nanocrystals such as Mn doped ZnS, Mn doped ZnSe and Cu doped InZnS, are considered as new classes of fluorescent biological probes with low toxicity. Although the synthesis in high quality of such nanomaterials is now well established, transforming them into functional fluorescent probes remains a challenge. Here we report a fluorescent cellular imaging probe made of high quality doped semiconductor nanocrystals. We have identified two different coating approaches suitable for transforming the as synthesized hydrophobic doped semiconductor nanocrystals into water-soluble functional nanoparticles. Following these approaches we have synthesized TAT-peptide- and folate-functionalized nanoparticles of 10-80 nm hydrodynamic diameter and used them as a fluorescent cell label. The results shows that doped semiconductor nanocrystals can be an attractive alternative for conventional cadmium based quantum dots with low toxicity. Electronic supplementary information available: Characterization details of coating and

  5. Π Band Dispersion along Conjugated Organic Nanowires Synthesized on a Metal Oxide Semiconductor

    PubMed Central

    2016-01-01

    Surface-confined dehalogenation reactions are versatile bottom-up approaches for the synthesis of carbon-based nanostructures with predefined chemical properties. However, for devices generally requiring low-conductivity substrates, potential applications are so far severely hampered by the necessity of a metallic surface to catalyze the reactions. In this work we report the synthesis of ordered arrays of poly(p-phenylene) chains on the surface of semiconducting TiO2(110) via a dehalogenative homocoupling of 4,4″-dibromoterphenyl precursors. The supramolecular phase is clearly distinguished from the polymeric one using low-energy electron diffraction and scanning tunneling microscopy as the substrate temperature used for deposition is varied. X-ray photoelectron spectroscopy of C 1s and Br 3d core levels traces the temperature of the onset of dehalogenation to around 475 K. Moreover, angle-resolved photoemission spectroscopy and tight-binding calculations identify a highly dispersive band characteristic of a substantial overlap between the precursor’s π states along the polymer, considered as the fingerprint of a successful polymerization. Thus, these results establish the first spectroscopic evidence that atomically precise carbon-based nanostructures can readily be synthesized on top of a transition-metal oxide surface, opening the prospect for the bottom-up production of novel molecule–semiconductor devices. PMID:27115554

  6. Is DNA a metal, semiconductor or insulator? A theoretical approach

    NASA Astrophysics Data System (ADS)

    Rey-Gonzalez, Rafael; Fonseca-Romero, Karen; Plazas, Carlos; Grupo de Óptica e Información Cuántica Team

    Over the last years, scientific interest for designing and making low dimensional electronic devices with traditional or novel materials has been increased. These experimental and theoretical researches in electronic properties at molecular scale are looking for developing efficient devices able to carry out tasks which are currently done by silicon transistors and devices. Among the new materials DNA strands are highlighted, but the experimental results have been contradictories pointing to behaviors as conductor, semiconductor or insulator. To contribute to the understanding of the origin of the disparity of the measurements, we perform a numerical calculation of the electrical conductance of DNA segments, modeled as 1D disordered finite chains. The system is described into a Tight binding model with nearest neighbor interactions and a s orbital per site. Hydration effects are included as random variations of self-energies. The electronic current as a function of applied bias is calculated using Launder formalism, where the transmission probability is determined into the transfer matrix formalism. We find a conductor-to-semiconductor-to-insulator transition as a function of the three effects taken into account: chain size, intrinsic disorder, and hydration We thank Fundación para la Promoción de la Investigación y la Tecnología, Colombia, and Dirección de Investigación de Bogotá, Universidad Nacional de Colombia, for partial financial support.

  7. Semiconductor-to-metallic flipping in a ZnFe{sub 2}O{sub 4}–graphene based smart nano-system: Temperature/microwave magneto-dielectric spectroscopy

    SciTech Connect

    Ameer, Shahid; Gul, Iftikhar Hussain; Mahmood, Nasir; Mujahid, Muhammad

    2015-01-15

    Zn-(FeO{sub 2}){sub 2}–graphene smart nano-composites were synthesized using a novel modified solvothermal synthesis with different percentages of graphene. The structure of the nanocomposite was confirmed through X-ray diffraction, micro-Raman scattering spectroscopy, Ultraviolet–Visible spectroscopy, and Fourier transform infrared spectroscopy. The structural growth and morphological aspects were analyzed using scanning/transmission electron microscopy, revealing marvelous micro-structural features of the assembled nano-system resembling a maple leaf. To determine the composition, energy dispersive spectroscopy and X-ray photoelectron spectroscopy were used. Microwave magneto-dielectric spectroscopy revealed the improved dielectric properties of the nano-composite compared to those of the parent functional nanocrystals. Temperature gradient dielectric spectroscopy was used over the spectral range from 100 Hz to 5 MHz to reveal the phenomenological effect that the nanosystem flips from its usual semiconductor nature to a metallic nature with sensing temperature. Electrical conductivity and dielectric analysis indicated that the dielectric loss and the dielectric permittivity increased at room temperature. This extraordinary switching capability of the functionalized graphene nanosystem opens up a new dimension for engineering advanced and efficient smart composite materials. - Graphical abstract: Display Omitted - Highlights: • Zn-(FeO{sub 2}){sub 2}–graphene smart nano-composites were synthesized using a novel modified solvothermal synthesis. • The synthesized nano-system exhibits marvelous leaf like microstructure. • These nano-composites show improved magneto dielectric response. • This engineered smart nano-system shows phenomenological flipping from semiconductor like nature to metallic behavior.

  8. Features of high-frequency measurements of the impedance of metal-insulator-semiconductor structures with an ultrathin oxide

    SciTech Connect

    Goldman, E. I.; Levashova, A. I.; Levashov, S. A.; Chucheva, G. V.

    2015-04-15

    The possibilities of using the data of high-frequency measurements of the impedance of metal-oxide-semiconductor structures with an ultrathin insulating layer for determining the parameters of the semiconductor and the tunneling characteristics of the insulator are considered. If the accuracy of the experiment makes it possible to record both the active and reactive impedance components, the thickness of the surface depletion layer, the resistance of the semiconductor base portion, the differential tunnel conductivity of the insulating layer, and the differential tunneling-stimulated current of the generation of electron-hole pairs are calculated using the values of the capacitance and conduction of the structure measured at two frequencies. In the case, where the values of the active component of the impedance is beyond the accuracy of measurements, analysis of the parameters is possible upon four-frequency organization of the experiment from the values of only the capacitances with an increased accuracy of their measurements. A test for the necessary accuracy of data of such an experiment is formulated. If the test fails, it is possible to determine only the capacitance of the surface depletion layer in the semiconductor and, in this case, it is sufficient to implement only the single-frequency experiment.

  9. Ag-based semiconductor photocatalysts in environmental purification

    NASA Astrophysics Data System (ADS)

    Li, Jiade; Fang, Wen; Yu, Changlin; Zhou, Wanqin; zhu, Lihua; Xie, Yu

    2015-12-01

    Over the past decades, with the fast development of global industrial development, various organic pollutants discharged in water have become a major source of environmental pollution in waste fields. Photocatalysis, as green and environmentally friendly technology, has attracted much attention in pollutants degradation due to its efficient degradation rate. However, the practical application of traditional semiconductor photocatalysts, e.g. TiO2, ZnO, is limited by their weak visible light adsorption due to their wide band gaps. Nowadays, the study in photocatalysts focuses on new and narrow band gap semiconductors. Among them, Ag-based semiconductors as promising visible light-driven photocatalysts have aroused much interesting due to their strong visible light responsibility. Most of Ag-based semiconductors could exhibit high initial photocatalytic activity. But they easy suffer from poor stability because of photochemical corrosion. Design heterojunction, increasing specific surface area, enriching pore structure, regulating morphology, controlling crystal facets, and producing plasmonic effects were considered as the effective strategies to improve the photocatalytic performance of Ag-based photocatalyts. Moreover, combining the superior properties of carbon materials (e.g. carbon quantum dots, carbon nano-tube, carbon nanofibers, graphene) with Ag-based semiconductor could produce high efficient composite photocatalyts.

  10. Chemical reactions at metallic and metal/semiconductor interfaces stimulated by pulsed laser annealing

    NASA Astrophysics Data System (ADS)

    Petit, E. J.; Caudano, R.

    1992-01-01

    Multilayer Al/Sb thin films have been evaporated on GaSb single crystals in ultra-high vacuum and pulsed-laser irradiated in-situ above the energy density threshold for surface melting. Superficial and interfacial chemical reactions have been characterized in-situ by Auger electron spectroscopy; and later, by X-ray photoelectron spectroscopy profiling, Rutherford backscattering spectrometry and scanning electron microscopy. The chemical reaction between the Al and Sb films is considered as a model reaction for laser-assisted synthesis of high-purity intermetallic compounds. The observation of a strong interfacial reaction between the melted film and the substrate is also a subject of great concern for optical data recording and laser alloying of ohmic contacts on semiconductors. We show that a suitable choice of the substrate and adding a low surface tension element into the metallic film can improve its stability during melting, and prevent inhomogeneous reaction and formation of holes, cracks and particles. Finally, other solutions are suggested to improve the control of these reactions.

  11. Fabrication and characterization of a Au/PMMA/Sb metal-organic insulator-semiconductor junction

    NASA Astrophysics Data System (ADS)

    Bandeira, M. C.; Guimarães, J. G.

    2014-05-01

    This work shows the growth and characterization of a Poly(methyl methacrylate) (PMMA)-Au heterostructure. The adsorption of a PMMA thin-film using layer-by-layer (LbL) technique was made on a Au thin-film formed by sputtering deposition on a glass substrate. Topographic, frictional effects and electrical characterizations were obtained using Scanning Probe Microscopy (SPM). Using the SPM silicon doped antimony probe as the semiconductor, a metal-organic insulator-semiconductor (MOIS) structure was characterized by its current-voltage curve showing a diode-like characteristic.

  12. Radiation induced failures of complementary metal oxide semiconductor containing pacemakers: a potentially lethal complication

    SciTech Connect

    Lewin, A.A.; Serago, C.F.; Schwade, J.G.; Abitbol, A.A.; Margolis, S.C.

    1984-10-01

    New multi-programmable pacemakers frequently employ complementary metal oxide semiconductors (CMOS). This circuitry appears more sensitive to the effects of ionizing radiation when compared to the semiconductor circuits used in older pacemakers. A case of radiation induced runaway pacemaker in a CMOS device is described. Because of this and other recent reports of radiation therapy-induced CMOS type pacemaker failure, these pacemakers should not be irradiated. If necessary, the pacemaker can be shielded or moved to a site which can be shielded before institution of radiation therapy. This is done to prevent damage to the CMOS circuit and the life threatening arrythmias which may result from such damage.

  13. Enhanced adhesion of films to semiconductors or metals by high energy bombardment

    NASA Technical Reports Server (NTRS)

    Tombrello, Thomas A. (Inventor); Qiu, Yuanxun (Inventor); Mendenhall, Marcus H. (Inventor)

    1985-01-01

    Films (12) of a metal such as gold or other non-insulator materials are firmly bonded to other non-insulators such as semiconductor substrates (10), suitably silicon or gallium arsenide by irradiating the interface with high energy ions. The process results in improved adhesion without excessive doping and provides a low resistance contact to the semiconductor. Thick layers can be bonded by depositing or doping the interfacial surfaces with fissionable elements or alpha emitters. The process can be utilized to apply very small, low resistance electrodes (78) to light-emitting solid state laser diodes (60) to form a laser device 70.

  14. MBE Growth of Ferromagnetic Metal/Compound Semiconductor Heterostructures for Spintronics

    ScienceCinema

    Palmstrom, Chris [University of California, Santa Barbara, California, United States

    2016-07-12

    Electrical transport and spin-dependent transport across ferromagnet/semiconductor contacts is crucial in the realization of spintronic devices. Interfacial reactions, the formation of non-magnetic interlayers, and conductivity mismatch have been attributed to low spin injection efficiency. MBE has been used to grow epitaxial ferromagnetic metal/GA(1-x)AL(x)As heterostructures with the aim of controlling the interfacial structural, electronic, and magnetic properties. In situ, STM, XPS, RHEED and LEED, and ex situ XRD, RBS, TEM, magnetotransport, and magnetic characterization have been used to develop ferromagnetic elemental and metallic compound/compound semiconductor tunneling contacts for spin injection. The efficiency of the spin polarized current injected from the ferromagnetic contact has been determined by measuring the electroluminescence polarization of the light emitted from/GA(1-x)AL(x)As light-emitting diodes as a function of applied magnetic field and temperature. Interfacial reactions during MBE growth and post-growth anneal, as well as the semiconductor device band structure, were found to have a dramatic influence on the measured spin injection, including sign reversal. Lateral spin-transport devices with epitaxial ferromagnetic metal source and drain tunnel barrier contacts have been fabricated with the demonstration of electrical detection and the bias dependence of spin-polarized electron injection and accumulation at the contacts. This talk emphasizes the progress and achievements in the epitaxial growth of a number of ferromagnetic compounds/III-V semiconductor heterostructures and the progress towards spintronic devices.

  15. Using x-ray diffraction to identify precipitates in transition metal doped semiconductors

    NASA Astrophysics Data System (ADS)

    Zhou, Shengqiang; Potzger, K.; Talut, G.; von Borany, J.; Skorupa, W.; Helm, M.; Fassbender, J.

    2008-04-01

    In the past decade, room temperature ferromagnetism was often observed in transition metal doped semiconductors, which were claimed as diluted magnetic semiconductors (DMS). Nowadays intensive activities are devoted to clarify wether the observed ferromagnetism stems from carrier mediated magnetic impurities, ferromagnetic precipitates, or spinodal decomposition. In this paper, we have correlated the structural and magnetic properties of transition metal doped ZnO, TiO2, and Si, prepared by ion implantation. Crystalline precipitates, i.e., transition metal (Co, Ni) and Mn-silicide nanocrystals, are responsible for the magnetism. Additionally due to their orientation nature with respect to the host, these nanocrystals in some cases are not detectable by conventional x-ray diffraction (XRD). This nature results in the pitfall of using XRD to exclude magnetic precipitates in DMS materials.

  16. Using a Semiconductor-to-Metal Transition to Control Optical Transmission through Subwavelength Hole Arrays

    DOE PAGES

    Donev, E. U.; Suh, J. Y.; Lopez, R.; ...

    2008-01-01

    We describe a simple configuration in which the extraordinary optical transmission effect through subwavelength hole arrays in noble-metal films can be switched by the semiconductor-to-metal transition in an underlying thin film of vanadium dioxide. In these experiments, the transition is brought about by thermal heating of the bilayer film. The surprising reverse hysteretic behavior of the transmission through the subwavelength holes in the vanadium oxide suggest that this modulation is accomplished by a dielectric-matching condition rather than plasmon coupling through the bilayer film. The results of this switching, including the wavelength dependence, are qualitatively reproduced by a transfer matrix model.more » The prospects for effecting a similar modulation on a much faster time scale by using ultrafast laser pulses to trigger the semiconductor-to-metal transition are also discussed.« less

  17. Localized dielectric breakdown and antireflection coating in metal-oxide-semiconductor photoelectrodes

    NASA Astrophysics Data System (ADS)

    Ji, Li; Hsu, Hsien-Yi; Li, Xiaohan; Huang, Kai; Zhang, Ye; Lee, Jack C.; Bard, Allen J.; Yu, Edward T.

    2017-01-01

    Silicon-based photoelectrodes for solar fuel production have attracted great interest over the past decade, with the major challenge being silicon's vulnerability to corrosion. A metal-insulator-semiconductor architecture, in which an insulator film serves as a protection layer, can prevent corrosion but must also allow low-resistance carrier transport, generally leading to a trade-off between stability and efficiency. In this work, we propose and demonstrate a general method to decouple the two roles of the insulator by employing localized dielectric breakdown. This approach allows the insulator to be thick, which enhances stability, while enabling low-resistance carrier transport as required for efficiency. This method can be applied to various oxides, such as SiO2 and Al2O3. In addition, it is suitable for silicon, III-V compounds, and other optical absorbers for both photocathodes and photoanodes. Finally, the thick metal-oxide layer can serve as a thin-film antireflection coating, which increases light absorption efficiency.

  18. Improved Radio Frequency Power Characteristics of Complementary Metal-Oxide-Semiconductor-Compatible Asymmetric-Lightly-Doped-Drain Metal-Oxide-Semiconductor Transistor

    NASA Astrophysics Data System (ADS)

    Chang, Tsu; Kao, Hsuan-ling; Chen, Y. J.; Chin, Albert

    2010-03-01

    We have characterized and modeled the radio frequency (RF) power performance of a 0.18 µm asymmetric-lightly-doped-drain metal-oxide-semiconductor field-effect transistor (LDD MOSFET). In comparison with the conventional 0.18 µm MOSFET, this asymmetric-LDD device shows a larger power density of 0.54 W/mm, and 8 dB better adjacent channel power ratio (ACPR) linearity at 2.4 GHz from the improved twice DC breakdown voltage of 6.9 V. These significant improvements of RF power performance in the asymmetric-LDD transistor are important for the medium RF power amplifier application.

  19. Crystal Phases in Hybrid Metal-Semiconductor Nanowire Devices.

    PubMed

    David, J; Rossella, F; Rocci, M; Ercolani, D; Sorba, L; Beltram, F; Gemmi, M; Roddaro, S

    2017-04-12

    We investigate the metallic phases observed in hybrid metal-GaAs nanowire devices obtained by controlled thermal annealing of Ni/Au electrodes. Devices are fabricated onto a SiN membrane compatible with transmission electron microscopy studies. Energy dispersive X-ray spectroscopy allows us to show that the nanowire body includes two Ni-rich phases that thanks to an innovative use of electron diffraction tomography can be unambiguously identified as Ni3GaAs and Ni5As2 crystals. The mechanisms of Ni incorporation leading to the observed phenomenology are discussed.

  20. Magnetoreflection spectroscopy of monolayer transition-metal dichalcogenide semiconductors in pulsed magnetic fields

    DOE PAGES

    Stier, Andreas V.; McCreary, Kathleen M.; Jonker, Berend T.; ...

    2016-05-13

    The authors describe recent experimental efforts to perform polarization-resolved optical spectroscopy of monolayer transition-metal dichalcogenide semiconductors in very large pulsed magnetic fields to 65 T. The experimental setup and technical challenges are discussed in detail, and temperature-dependent magnetoreflection spectra from atomically thin tungsten disulphide are presented. The data clearly reveal not only the valley Zeeman effect in these two-dimensional semiconductors but also the small quadratic exciton diamagnetic shift from which the very small exciton size can be directly inferred. Lastly, the authors present model calculations that demonstrate how the measured diamagnetic shifts can be used to constrain estimates of themore » exciton binding energy in this new family of monolayer semiconductors.« less

  1. Magnetoreflection spectroscopy of monolayer transition-metal dichalcogenide semiconductors in pulsed magnetic fields

    SciTech Connect

    Stier, Andreas V.; McCreary, Kathleen M.; Jonker, Berend T.; Kono, Junichiro; Crooker, Scott A.

    2016-05-13

    The authors describe recent experimental efforts to perform polarization-resolved optical spectroscopy of monolayer transition-metal dichalcogenide semiconductors in very large pulsed magnetic fields to 65 T. The experimental setup and technical challenges are discussed in detail, and temperature-dependent magnetoreflection spectra from atomically thin tungsten disulphide are presented. The data clearly reveal not only the valley Zeeman effect in these two-dimensional semiconductors but also the small quadratic exciton diamagnetic shift from which the very small exciton size can be directly inferred. Lastly, the authors present model calculations that demonstrate how the measured diamagnetic shifts can be used to constrain estimates of the exciton binding energy in this new family of monolayer semiconductors.

  2. Passivation of impurities in semiconductors by hydrogen and light metal ions

    NASA Astrophysics Data System (ADS)

    Gislason, Hafliði P.

    1997-01-01

    Books as well as numerous articles have been written about hydrogen passivation in classical semiconductors such as Si and GaAs. The subject has gained a renewed interest recently since hydrogen is widely considered to saturate the hole conductivity of the wide bandgap semiconductors GaN and ZnSe which are currently most promising for blue light emitting devices. Other group-I impurities are capable of compensating the electrical conductivity of semiconductors both through directly neutralising (passivating) the impurity or providing space charge of polarity opposite to that of the dominating one. The paper reviews the similarities and differences between hydrogen and its light metallic neighbour in the periodic table, lithium. Also we provide a comparison with the heavier interstitial copper which is known for its ability to passivate shallow acceptors. Finally fundamental differences between shallow-level and deep level passivation will be addressed.

  3. Two-dimensional ferromagnet/semiconductor transition metal dichalcogenide contacts: p-type Schottky barrier and spin-injection control

    NASA Astrophysics Data System (ADS)

    Gan, Li-Yong; Zhang, Qingyun; Cheng, Yingchun; Schwingenschlögl, Udo

    2013-12-01

    We study the ferromagnet/semiconductor contacts formed by transition metal dichalcogenide monolayers, focusing on semiconducting MoS2 and WS2 and ferromagnetic VS2. We investigate the degree of p-type doping and demonstrate tuning of the Schottky barrier height by vertical compressive pressure. An analytical model is presented for the barrier heights that accurately describes the numerical findings and is expected to be of general validity for all transition metal dichalcogenide metal/semiconductor contacts. Furthermore, magnetic proximity effects induce a 100% spin polarization at the Fermi level in the semiconductor where the spin splitting increases up to 0.70 eV for increasing pressure.

  4. The Effect of Interfacial Dipoles on the Metal-Double Interlayers-Semiconductor Structure and Their Application in Contact Resistivity Reduction.

    PubMed

    Kim, Sun-Woo; Kim, Seung-Hwan; Kim, Gwang-Sik; Choi, Changhwan; Choi, Rino; Yu, Hyun-Yong

    2016-12-28

    We demonstrate the contact resistance reduction for III-V semiconductor-based electrical and optical devices using the interfacial dipole effect of ultrathin double interlayers in a metal-interlayers-semiconductor (M-I-S) structure. An M-I-S structure blocks metal-induced gap states (MIGS) to a sufficient degree to alleviate Fermi level pinning caused by MIGS, resulting in contact resistance reduction. In addition, the ZnO/TiO2 interlayers of an M-I-S structure induce an interfacial dipole effect that produces Schottky barrier height (ΦB) reduction, which reduces the specific contact resistivity (ρc) of the metal/n-type III-V semiconductor contact. As a result, the Ti/ZnO(0.5 nm)/TiO2(0.5 nm)/n-GaAs metal-double interlayers-semiconductor (M-DI-S) structure achieved a ρc of 2.51 × 10(-5) Ω·cm(2), which exhibited an ∼42 000× reduction and an ∼40× reduction compared to the Ti/n-GaAs metal-semiconductor (M-S) contact and the Ti/TiO2(0.5 nm)/n-GaAs M-I-S structure, respectively. The interfacial dipole at the ZnO/TiO2 interface was determined to be approximately -0.104 eV, which induced a decrease in the effective work function of Ti and, therefore, reduced ΦB. X-ray photoelectron spectroscopy analysis of the M-DI-S structure also confirmed the existence of the interfacial dipole. On the basis of these results, the M-DI-S structure offers a promising nonalloyed Ohmic contact scheme for the development of III-V semiconductor-based applications.

  5. Future of Semiconductor Based Thermal Neutron Detectors

    SciTech Connect

    Nikolic, R J; Cheung, C L; Reinhardt, C E; Wang, T F

    2006-02-22

    Thermal neutron detectors have seen only incremental improvements over the last decades. In this paper we overview the current technology of choice for thermal neutron detection--{sup 3}He tubes, which suffer from, moderate to poor fieldability, and low absolute efficiency. The need for improved neutron detection is evident due to this technology gap and the fact that neutrons are a highly specific indicator of fissile material. Recognizing this need, we propose to exploit recent advances in microfabrication technology for building the next generation of semiconductor thermal neutron detectors for national security requirements, for applications requiring excellent fieldability of small devices. We have developed an innovative pathway taking advantage of advanced processing and fabrication technology to produce the proposed device. The crucial advantage of our Pillar Detector is that it can simultaneously meet the requirements of high efficiency and fieldability in the optimized configuration, the detector efficiency could be higher than 70%.

  6. A comprehensive study of charge trapping in organic field-effect devices with promising semiconductors and different contact metals by displacement current measurements

    NASA Astrophysics Data System (ADS)

    Bisoyi, Sibani; Rödel, Reinhold; Zschieschang, Ute; Kang, Myeong Jin; Takimiya, Kazuo; Klauk, Hagen; Tiwari, Shree Prakash

    2016-02-01

    A systematic and comprehensive study on the charge-carrier injection and trapping behavior was performed using displacement current measurements in long-channel capacitors based on four promising small-molecule organic semiconductors (pentacene, DNTT, C10-DNTT and DPh-DNTT). In thin-film transistors, these semiconductors showed charge-carrier mobilities ranging from 1.0 to 7.8 cm2 V-1 s-1. The number of charges injected into and extracted from the semiconductor and the density of charges trapped in the device during each measurement were calculated from the displacement current characteristics and it was found that the density of trapped charges is very similar in all devices and of the order 1012 cm-2, despite the fact that the four semiconductors show significantly different charge-carrier mobilities. The choice of the contact metal (Au, Ag, Cu, Pd) was also found to have no significant effect on the trapping behavior.

  7. Ferroelectric-field-effect-enhanced electroresistance in metal/ferroelectric/semiconductor tunnel junctions.

    PubMed

    Wen, Zheng; Li, Chen; Wu, Di; Li, Aidong; Ming, Naiben

    2013-07-01

    Ferroelectric tunnel junctions (FTJs), composed of two metal electrodes separated by an ultrathin ferroelectric barrier, have attracted much attention as promising candidates for non-volatile resistive memories. Theoretical and experimental works have revealed that the tunnelling resistance switching in FTJs originates mainly from a ferroelectric modulation on the barrier height. However, in these devices, modulation on the barrier width is very limited, although the tunnelling transmittance depends on it exponentially as well. Here we propose a novel tunnelling heterostructure by replacing one of the metal electrodes in a normal FTJ with a heavily doped semiconductor. In these metal/ferroelectric/semiconductor FTJs, not only the height but also the width of the barrier can be electrically modulated as a result of a ferroelectric field effect, leading to a greatly enhanced tunnelling electroresistance. This idea is implemented in Pt/BaTiO3/Nb:SrTiO3 heterostructures, in which an ON/OFF conductance ratio above 10(4), about one to two orders greater than those reported in normal FTJs, can be achieved at room temperature. The giant tunnelling electroresistance, reliable switching reproducibility and long data retention observed in these metal/ferroelectric/semiconductor FTJs suggest their great potential in non-destructive readout non-volatile memories.

  8. Theoretical maximum efficiency of solar energy conversion in plasmonic metal-semiconductor heterojunctions.

    PubMed

    Cushing, Scott K; Bristow, Alan D; Wu, Nianqiang

    2015-11-28

    Plasmonics can enhance solar energy conversion in semiconductors by light trapping, hot electron transfer, and plasmon-induced resonance energy transfer (PIRET). The multifaceted response of the plasmon and multiple interaction pathways with the semiconductor makes optimization challenging, hindering design of efficient plasmonic architectures. Therefore, in this paper we use a density matrix model to capture the interplay between scattering, hot electrons, and dipole-dipole coupling through the plasmon's dephasing, including both the coherent and incoherent dynamics necessary for interactions on the plasmon's timescale. The model is extended to Shockley-Queisser limit calculations for both photovoltaics and solar-to-chemical conversion, revealing the optimal application of each enhancement mechanism based on plasmon energy, semiconductor energy, and plasmon dephasing. The results guide application of plasmonic solar-energy harvesting, showing which enhancement mechanism is most appropriate for a given semiconductor's weakness, and what nanostructures can achieve the maximum enhancement.

  9. The local metallicity of gadolinium doped compound semiconductors

    NASA Astrophysics Data System (ADS)

    Colón Santana, J. A.; Liu, Pan; Wang, Xianjie; Tang, J.; McHale, S. R.; Wooten, D.; McClory, J. W.; Petrosky, J. C.; Wu, J.; Palai, R.; Losovjy, Ya B.; Dowben, P. A.

    2012-11-01

    The local metallicities of Hf0.97Gd0.03O2, Ga0.97Gd0.03N, Eu0.97Gd0.04O and EuO films were studied through a comparison of the findings from constant initial state spectroscopy using synchrotron light. Resonant enhancements, corresponding to the 4d → 4f transitions of Eu and Gd, were observed in some of the valence band photoemission features. The resonant photoemission intensity enhancements for the Gd 4f photoemission features are far stronger for the more insulating host systems than for the metallic system Eu0.96Gd0.04O. The evidence seems to suggest a correlation between the effective screening in the films and the resonant photoemission process.

  10. Metal-Semiconductor Interfaces and Patterns in Functionalized Graphene

    NASA Astrophysics Data System (ADS)

    Singh, Abhishek; Penev, Evgeni; Yakobson, Boris

    2010-03-01

    Functionalization offers a novel way to modify the electronic and magnetic properties of graphene. Specific topology is essential to achieve devices with the desired features. Using density functional theory, we demonstrate stability of several such configurations, (in single and double sided functionalized graphene) and analyze their electronic and magnetic properties. We show that ``nanoroads'' [1] and ``nanodots'' [2] of pristine graphene can be carved in the electrically insulating matrix of fully hydrogenated carbon sheet (graphane) [1]. Such one-dimensional roads display individual characteristics and, depending upon zigzag or armchair orientation, can be metallic or semiconducting. Furthermore, the wide enough zigzag roads become magnetic with energetically similar ferro- and antiferromagnetic states. Engineering magnetic, metallic, and semiconducting elements within the same mechanically intact sheet of graphene presents a new opportunity for applications. [1] A. K. Singh and B. I. Yakobson, Nano Lett., 9, 1540 (2009). [2] A. K. Singh, E. S. Penev, and B. I. Yakobson submitted.

  11. Extraordinary Magnetoresistance in Hybrid Semiconductor-Metal Systems

    NASA Astrophysics Data System (ADS)

    Hewett, T. H.; Kusmartsev, F. V.

    We show that extraordinary magnetoresistance (EMR) arises in systems consisting of two components; a semiconducting ring with a metallic inclusion embedded. The important aspect of this discovery is that the system must have a quasi-two-dimensional character. Using the same materials and geometries for the samples as in experiments by Solin et al.1,2, we show that such systems indeed exhibit a huge magnetoresistance. The magnetoresistance arises due to the switching of electrical current paths passing through the metallic inclusion. Diagrams illustrating the flow of the current density within the samples are utilised in discussion of the mechanism responsible for the magnetoresistance effect. Extensions are then suggested which may be applicable to the silver chalcogenides. Our theory offers an excellent description and explanation of experiments where a huge magnetoresistance has been discovered2,3.

  12. Extraordinary Magnetoresistance in Hybrid Semiconductor-Metal Systems

    NASA Astrophysics Data System (ADS)

    Hewett, T. H.; Kusmartsev, F. V.

    2010-12-01

    We show that extraordinary magnetoresistance (EMR) arises in systems consisting of two components; a semiconducting ring with a metallic inclusion embedded. The important aspect of this discovery is that the system must have a quasi-two-dimensional character. Using the same materials and geometries for the samples as in experiments by Solin et al.1,2, we show that, such systems indeed exhibit a huge magnetoresistance. The magnetoresistance arises due to the switching of electrical current paths passing through the metallic inclusion. Diagrams illustrating the flow of the current density within the samples are utilised in discussion of the mechanism responsible for the magnetoresistance effect. Extensions are then suggested which may be applicable to the silver chalcogenides. Our theory offers an excellent description and explanation of experiments where a huge magnetoresistance has been discovered2,3.

  13. Anisotropy-based crystalline oxide-on-semiconductor material

    DOEpatents

    McKee, Rodney Allen; Walker, Frederick Joseph

    2000-01-01

    A semiconductor structure and device for use in a semiconductor application utilizes a substrate of semiconductor-based material, such as silicon, and a thin film of a crystalline oxide whose unit cells are capable of exhibiting anisotropic behavior overlying the substrate surface. Within the structure, the unit cells of the crystalline oxide are exposed to an in-plane stain which influences the geometric shape of the unit cells and thereby arranges a directional-dependent quality of the unit cells in a predisposed orientation relative to the substrate. This predisposition of the directional-dependent quality of the unit cells enables the device to take beneficial advantage of characteristics of the structure during operation. For example, in the instance in which the crystalline oxide of the structure is a perovskite, a spinel or an oxide of similarly-related cubic structure, the structure can, within an appropriate semiconductor device, exhibit ferroelectric, piezoelectric, pyroelectric, electro-optic, ferromagnetic, antiferromagnetic, magneto-optic or large dielectric properties that synergistically couple to the underlying semiconductor substrate.

  14. Controlled metal-semiconductor sintering/alloying by one-directional reverse illumination

    DOEpatents

    Sopori, Bhushan L.

    1993-01-01

    Metal strips deposited on a top surface of a semiconductor substrate are sintered at one temperature simultaneously with alloying a metal layer on the bottom surface at a second, higher temperature. This simultaneous sintering of metal strips and alloying a metal layer on opposite surfaces of the substrate at different temperatures is accomplished by directing infrared radiation through the top surface to the interface of the bottom surface with the metal layer where the radiation is absorbed to create a primary hot zone with a temperature high enough to melt and alloy the metal layer with the bottom surface of the substrate. Secondary heat effects, including heat conducted through the substrate from the primary hot zone and heat created by infrared radiation reflected from the metal layer to the metal strips, as well as heat created from some primary absorption by the metal strips, combine to create secondary hot zones at the interfaces of the metal strips with the top surface of the substrate. These secondary hot zones are not as hot as the primary hot zone, but they are hot enough to sinter the metal strips to the substrate.

  15. Mechanistic Studies of Charge Injection from Metallic Electrodes into Organic Semiconductors Mediated by Ionic Functionalities: Final Report

    SciTech Connect

    Nguyen, Thuc-Quyen; Bazan, Guillermo; Mikhailovsky, Alexander

    2014-04-15

    Metal-organic semiconductor interfaces are important because of their ubiquitous role in determining the performance of modern electronics such as organic light emitting diodes (OLEDs), fuel cells, batteries, field effect transistors (FETs), and organic solar cells. Interfaces between metal electrodes required for external wiring to the device and underlying organic structures directly affect the charge carrier injection/collection efficiency in organic-based electronic devices primarily due to the mismatch between energy levels in the metal and organic semiconductor. Environmentally stable and cost-effective electrode materials, such as aluminum and gold typically exhibit high potential barriers for charge carriers injection into organic devices leading to increased operational voltages in OLEDs and FETs and reduced charge extraction in photovoltaic devices. This leads to increased power consumption by the device, reduced overall efficiency, and decreased operational lifetime. These factors represent a significant obstacle for development of next generation of cheap and energy-efficient components based on organic semiconductors. It has been noticed that introduction of organic materials with conjugated backbone and ionic pendant groups known as conjugated poly- and oligoelectrolytes (CPEs and COEs), enables one to reduce the potential barriers at the metal-organic interface and achieve more efficient operation of a device, however exact mechanisms of the phenomenon have not been understood. The goal of this project was to delineate the function of organic semiconductors with ionic groups as electron injection layers. The research incorporated a multidisciplinary approach that encompassed the creation of new materials, novel processing techniques, examination of fundamental electronic properties and the incorporation of the resulting knowledgebase into development of novel organic electronic devices with increased efficiency, environmental stability, and reduced

  16. Ring resonator based narrow-linewidth semiconductor lasers

    NASA Technical Reports Server (NTRS)

    Ksendzov, Alexander (Inventor)

    2005-01-01

    The present invention is a method and apparatus for using ring resonators to produce narrow linewidth hybrid semiconductor lasers. According to one embodiment of the present invention, the narrow linewidths are produced by combining the semiconductor gain chip with a narrow pass band external feedback element. The semi conductor laser is produced using a ring resonator which, combined with a Bragg grating, acts as the external feedback element. According to another embodiment of the present invention, the proposed integrated optics ring resonator is based on plasma enhanced chemical vapor deposition (PECVD) SiO.sub.2 /SiON/SiO.sub.2 waveguide technology.

  17. Metal-inducd assembly of a semiconductor-island lattice: Getruncated pyramids on Au-patterned Si

    SciTech Connect

    Robinson, J.T.; Liddle, J.A.; Minor, A.; Radmilovic, V.; Yi,D.O.; Greaney, P.A.; Long, K.N.; Chrzan, D.C.; Dubon, O.D.

    2005-08-28

    We report the two-dimensional alignment of semiconductor islands using rudimentary metal patterning to control nucleation and growth. In the Ge on Si system, a square array of sub-micron Au dots on the Si (001) surface induces the assembly of deposited Ge adatoms into an extensive island lattice. Remarkably, these highly ordered Ge islands form between the patterned Au dots and are characterized by a unique truncated pyramidal shape. A model based on patterned diffusion barriers explains the observed ordering and establishes general criteria for the broader applicability of such a directed assembly process to quantum dot ordering.

  18. Long-wavelength metal-semiconductor-metal photodetectors with transparent and opaque electrodes

    NASA Astrophysics Data System (ADS)

    Wohlmuth, Walter A.; Adesida, Ilesanmi; Caneau, Catherine

    1995-09-01

    In this paper, we present a comparative study of transparent and opaque electrode InAlAs/InGaAs metal-semiconductor-metal photodiodes (MSMPDs) for operation at 1.31 and 1.55 micrometers . The transparent materials are indium-tin-oxide (ITO) and cadmium-tin-oxide (CTO) and the opaque material is Ti-Au. The rf magnetron sputtered films of ITO and CTO, deposited at a substrate temperature of 300 degrees C, exhibited as-deposited resistivities of 5.6(DOT)10-3 (Omega) (DOT)cm and 1.0(DOT)10-3 (Omega) (DOT)cm, respectively. The resistivity of the ITO and CTO films dropped to 1.1(DOT)10-3 (Omega) (DOT)cm and 5.2(DOT)10-4 (Omega) (DOT)cm, respectively, after a 4 minute 400 degree C anneal in an N2 ambient. The interdigitated ITO and CTO electrodes were made by etching in a methane:hydrogen (1 to 3) plasma. The responsivity of 1 micrometers finger by 1 micrometers spacing (1 by 1 micrometers ), 50 X 50 micrometers 2 active area, MSMPDs was 0.40 A/W for the Ti-Au, 0.66 A/W for the CTO, and 0.69 A/W for the ITO MSMPDs. The Ti-Au, CTO and ITO MSMPDs had 3- dB cut-off frequencies of 14.0 GHz, 7.5 GHz, and 5.0 GHz, respectively, from time-domain measurements performed at 1.3 micrometers and 11.26 GHz, 4.00 GHz, and 2.61 GHz, respectively, from frequency-domain measurements performed at 1.55 micrometers . Discrepencies between the 3-dB cut-off frequency obtained from the time-domain and the frequency-domain measurements are attributed to the time-domain measurement system's inability to accurately resolve low frequency behavior (below 2 GHz) and space charge effects.

  19. DNA detection using a complementary metal-oxide semiconductor ring oscillator circuit

    NASA Astrophysics Data System (ADS)

    Kocanda, Martin; Abdel-Motaleb, Ibrahim

    2010-10-01

    A DNA detection scheme has been implemented that utilizes a simple complementary metal-oxide semiconductor (CMOS) ring oscillator circuit. The detector oscillates at a fundamental frequency when using a nonhybridized single-strand DNA probe layer. Upon hybridization with a complimentary DNA strand, the oscillator output exhibits an increased frequency shift, indicating a genetic match. The probe assembly consists of a p-GaAs substrate containing a pulsed laser deposition-applied barium strontium titanate layer and an overlying sodium dodecyl sulfate lipid layer that serves to anchor a functionalized oligonucleotide probe. The oscillator circuit consisting of cascaded discrete complimentary n-channel and p-channel metal-oxide-semiconductor field-effect transistors was implemented using passive components arranged in a T-network to provide the associated fundamental time constant.

  20. Recent progress on metal core@semiconductor shell nanocomposites as a promising type of photocatalyst

    NASA Astrophysics Data System (ADS)

    Zhang, Nan; Liu, Siqi; Xu, Yi-Jun

    2012-03-01

    The creation of core-shell nanocomposites (CSNs) has attracted considerable attention and developed into an increasingly important research area at the frontier of advanced materials chemistry. CSNs, which are nanoscaled assemblies with a chemical composition that is different on the surface compared to the core region, have found versatile applications in many fields, such as electrooptics, quantum dots, microscopy labels, drug delivery, chemical sensors, nanoreactors and catalysis. This review is primarily focused on the applications of metal core@semiconductor shell nanocomposites in heterogeneous photocatalysis, including photocatalytic nonselective processes for environmental remediation, selective organic transformations to fine chemicals and water splitting to clean hydrogen energy. It is hoped that this minireview can inspire multidisciplinary research interest in the precisely morphology-controlled synthesis of a variety of metal core@semiconductor shell nanoassemblies and their wide applications in the realm of heterogeneous photocatalysis.

  1. Metal-Insulator-Semiconductor Diode Consisting of Two-Dimensional Nanomaterials.

    PubMed

    Jeong, Hyun; Oh, Hye Min; Bang, Seungho; Jeong, Hyeon Jun; An, Sung-Jin; Han, Gang Hee; Kim, Hyun; Yun, Seok Joon; Kim, Ki Kang; Park, Jin Cheol; Lee, Young Hee; Lerondel, Gilles; Jeong, Mun Seok

    2016-03-09

    We present a novel metal-insulator-semiconductor (MIS) diode consisting of graphene, hexagonal BN, and monolayer MoS2 for application in ultrathin nanoelectronics. The MIS heterojunction structure was fabricated by vertically stacking layered materials using a simple wet chemical transfer method. The stacking of each layer was confirmed by confocal scanning Raman spectroscopy and device performance was evaluated using current versus voltage (I-V) and photocurrent measurements. We clearly observed better current rectification and much higher current flow in the MIS diode than in the p-n junction and the metal-semiconductor diodes made of layered materials. The I-V characteristic curve of the MIS diode indicates that current flows mainly across interfaces as a result of carrier tunneling. Moreover, we observed considerably high photocurrent from the MIS diode under visible light illumination.

  2. Semiconductor-metal nanoparticle molecules: hybrid excitons and the nonlinear fano effect.

    PubMed

    Zhang, Wei; Govorov, Alexander O; Bryant, Garnett W

    2006-10-06

    Modern nanotechnology opens the possibility of combining nanocrystals of various materials with very different characteristics in one superstructure. Here we study theoretically the optical properties of hybrid molecules composed of semiconductor and metal nanoparticles. Excitons and plasmons in such a hybrid molecule become strongly coupled and demonstrate novel properties. At low incident light intensity, the exciton peak in the absorption spectrum is broadened and shifted due to incoherent and coherent interactions between metal and semiconductor nanoparticles. At high light intensity, the absorption spectrum demonstrates a surprising, strongly asymmetric shape. This shape originates from the coherent internanoparticle Coulomb interaction and can be viewed as a nonlinear Fano effect which is quite different from the usual linear Fano resonance.

  3. Effect of Temperature on GaGdO/GaN Metal Oxide Semiconductor Field Effect Transistors

    SciTech Connect

    Abernathy, C.R.; Baca, A.; Chu, S.N.G.; Hong, M.; Lothian, J.R.; Marcus, M.A.; Pearton, S.J.; Ren, F.; Schurman, M.J.

    1998-10-14

    GaGdO was deposited on GaN for use as a gate dielectric in order to fabricate a depletion metal oxide semiconductor field effect transistor (MOSFET). This is the fmt demonstration of such a device in the III-Nitride system. Analysis of the effect of temperature on the device shows that gate leakage is significantly reduced at elevated temperature relative to a conventional metal semiconductor field effeet transistor (MESFET) fabricated on the same GaN layer. MOSFET device operation in fact improved upon heating to 400 C. Modeling of the effeet of temperature on contact resistance suggests that the improvement is due to a reduction in the parasitic resistances present in the device.

  4. Field-induced activation of metal oxide semiconductor for low temperature flexible transparent electronic device applications

    NASA Astrophysics Data System (ADS)

    Pudasaini, Pushpa Raj; Noh, Joo Hyon; Wong, Anthony; Haglund, Amada; Ward, Thomas Zac; Mandrus, David; Rack, Philip

    Amorphous metal-oxide semiconductors have been extensively studied as an active channel material in thin film transistors due to their high carrier mobility, and excellent large-area uniformity. Here, we report the athermal activation of amorphous indium gallium zinc oxide semiconductor channels by an electric field-induced oxygen migration via gating through an ionic liquid. Using field-induced activation, a transparent flexible thin film transistor is demonstrated on a polyamide substrate with transistor characteristics having a current ON-OFF ratio exceeding 108, and saturation field effect mobility of 8.32 cm2/(V.s) without a post-deposition thermal treatment. This study demonstrates the potential of field-induced activation as an athermal alternative to traditional post-deposition thermal annealing for metal oxide electronic devices suitable for transparent and flexible polymer substrates. Materials Science and Technology Division, ORBL, Oak Ridge, TN 37831, USA.

  5. Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

    PubMed Central

    Rossi, Alessandro; Tanttu, Tuomo; Hudson, Fay E.; Sun, Yuxin; Möttönen, Mikko; Dzurak, Andrew S.

    2015-01-01

    As mass-produced silicon transistors have reached the nano-scale, their behavior and performances are increasingly affected, and often deteriorated, by quantum mechanical effects such as tunneling through single dopants, scattering via interface defects, and discrete trap charge states. However, progress in silicon technology has shown that these phenomena can be harnessed and exploited for a new class of quantum-based electronics. Among others, multi-layer-gated silicon metal-oxide-semiconductor (MOS) technology can be used to control single charge or spin confined in electrostatically-defined quantum dots (QD). These QD-based devices are an excellent platform for quantum computing applications and, recently, it has been demonstrated that they can also be used as single-electron pumps, which are accurate sources of quantized current for metrological purposes. Here, we discuss in detail the fabrication protocol for silicon MOS QDs which is relevant to both quantum computing and quantum metrology applications. Moreover, we describe characterization methods to test the integrity of the devices after fabrication. Finally, we give a brief description of the measurement set-up used for charge pumping experiments and show representative results of electric current quantization. PMID:26067215

  6. Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping.

    PubMed

    Rossi, Alessandro; Tanttu, Tuomo; Hudson, Fay E; Sun, Yuxin; Möttönen, Mikko; Dzurak, Andrew S

    2015-06-03

    As mass-produced silicon transistors have reached the nano-scale, their behavior and performances are increasingly affected, and often deteriorated, by quantum mechanical effects such as tunneling through single dopants, scattering via interface defects, and discrete trap charge states. However, progress in silicon technology has shown that these phenomena can be harnessed and exploited for a new class of quantum-based electronics. Among others, multi-layer-gated silicon metal-oxide-semiconductor (MOS) technology can be used to control single charge or spin confined in electrostatically-defined quantum dots (QD). These QD-based devices are an excellent platform for quantum computing applications and, recently, it has been demonstrated that they can also be used as single-electron pumps, which are accurate sources of quantized current for metrological purposes. Here, we discuss in detail the fabrication protocol for silicon MOS QDs which is relevant to both quantum computing and quantum metrology applications. Moreover, we describe characterization methods to test the integrity of the devices after fabrication. Finally, we give a brief description of the measurement set-up used for charge pumping experiments and show representative results of electric current quantization.

  7. Integrating Partial Polarization into a Metal-Ferroelectric-Semiconductor Field Effect Transistor Model

    NASA Technical Reports Server (NTRS)

    MacLeod, Todd C.; Ho, Fat Duen

    1999-01-01

    The ferroelectric channel in a Metal-Ferroelectric-Semiconductor Field Effect Transistor (MFSFET) can partially change its polarization when the gate voltage near the polarization threshold voltage. This causes the MFSFET Drain current to change with repeated pulses of the same gate voltage near the polarization threshold voltage. A previously developed model [11, based on the Fermi-Dirac function, assumed that for a given gate voltage and channel polarization, a sin-le Drain current value would be generated. A study has been done to characterize the effects of partial polarization on the Drain current of a MFSFET. These effects have been described mathematically and these equations have been incorporated into a more comprehensive mathematical model of the MFSFET. The model takes into account the hysteresis nature of the MFSFET and the time dependent decay as well as the effects of partial polarization. This model defines the Drain current based on calculating the degree of polarization from previous gate pulses, the present Gate voltage, and the amount of time since the last Gate volta-e pulse.

  8. Effect of barrier height on friction behavior of the semiconductors silicon and gallium arsenide in contact with pure metals

    NASA Technical Reports Server (NTRS)

    Mishina, H.; Buckley, D. H.

    1984-01-01

    Friction experiments were conducted for the semiconductors silicon and gallium arsenide in contact with pure metals. Polycrystalline titanium, tantalum, nickel, palladium, and platinum were made to contact a single crystal silicon (111) surface. Indium, nickel, copper, and silver were made to contact a single crystal gallium arsenide (100) surface. Sliding was conducted both in room air and in a vacuum of 10 to the minus 9th power torr. The friction of semiconductors in contact with metals depended on a Schottky barrier height formed at the metal semiconductor interface. Metals with a higher barrier height on semiconductors gave lower friction. The effect of the barrier height on friction behavior for argon sputtered cleaned surfaces in vacuum was more specific than that for the surfaces containing films in room air. With a silicon surface sliding on titanium, many silicon particles back transferred. In contrast, a large quantity of indium transferred to the gallium arsenide surface.

  9. Superatoms and Metal-Semiconductor Motifs for Cluster Materials

    SciTech Connect

    Castleman, A. W.

    2013-10-11

    A molecular understanding of catalysis and catalytically active materials is of fundamental importance in designing new substances for applications in energy and fuels. We have performed reactivity studies and ultrafast ionization and coulomb explosion studies on a variety of catalytically-relevant materials, including transition metal oxides of Fe, Co, Ni, Cu, Ti, V, Nb, and Ta. We demonstrate that differences in charge state, geometry, and elemental composition of clusters of such materials determine chemical reactivity and ionization behavior, crucial steps in improving performance of catalysts.

  10. Challenges of Electrical Measurements of Advanced Gate Dielectrics in Metal-Oxide-Semiconductor Devices

    NASA Astrophysics Data System (ADS)

    Vogel, Eric M.; Brown, George A.

    2003-09-01

    Experimental measurements and simulations are used to provide an overview of key issues with the electrical characterization of metal-oxide-semiconductor (MOS) devices with ultra-thin oxide and alternate gate dielectrics. Experimental issues associated with the most common electrical characterization method, capacitance-voltage (C-V), are first described. Issues associated with equivalent oxide thickness extraction and comparison, interface state measurement, extrinsic defects, and defect generation are then overviewed.

  11. Modular synthesis of a dual metal-dual semiconductor nano-heterostructure

    DOE PAGES

    Amirav, Lilac; Oba, Fadekemi; Aloni, Shaul; ...

    2015-04-29

    Reported is the design and modular synthesis of a dual metal-dual semiconductor heterostructure with control over the dimensions and placement of its individual components. Analogous to molecular synthesis, colloidal synthesis is now evolving into a series of sequential synthetic procedures with separately optimized steps. Here we detail the challenges and parameters that must be considered when assembling such a multicomponent nanoparticle, and their solutions.

  12. Metal ions to control the morphology of semiconductor nanoparticles: copper selenide nanocubes.

    PubMed

    Li, Wenhua; Zamani, Reza; Ibáñez, Maria; Cadavid, Doris; Shavel, Alexey; Morante, Joan Ramon; Arbiol, Jordi; Cabot, Andreu

    2013-03-27

    Morphology is a key parameter in the design of novel nanocrystals and nanomaterials with controlled functional properties. Here, we demonstrate the potential of foreign metal ions to tune the morphology of colloidal semiconductor nanoparticles. We illustrate the underlying mechanism by preparing copper selenide nanocubes in the presence of Al ions. We further characterize the plasmonic properties of the obtained nanocrystals and demonstrate their potential as a platform to produce cubic nanoparticles with different composition by cation exchange.

  13. Time-Resolved Studies of the Acoustic Vibrational Modes of Metal and Semiconductor Nano-objects.

    PubMed

    Major, Todd A; Lo, Shun Shang; Yu, Kuai; Hartland, Gregory V

    2014-03-06

    Over the past decade, there have been a number of transient absorption studies of the acoustic vibrational modes of metal and semiconductor nanoparticles. This Perspective provides an overview of this work. The way that the frequencies of the observed modes depend on the size and shape of the particles is described, along with their damping. Future research directions are also discussed, especially how these measurements provide information about the way nano-objects interact with their environment.

  14. Ultrafast transient absorption studies of single metal and semiconductor nanowires

    NASA Astrophysics Data System (ADS)

    Hartland, Gregory V.; Carey, Christopher R.; Staleva, Hristina

    2010-02-01

    Single particle transient absorption experiments have been used to study metallic and semiconducting nanowires. For the metal wires the major result is the observation of modulations in the transient absorption traces due to coherently excited breathing modes. The vibrational periods depend on the dimensions of the nanowire, and the decay times are sensitive to the environment. The nanowires in our experiments are spin coated from a polymer solution onto a glass substrate, and experience a range of different environments. This causes large variations in the quality factor of the breathing mode for different wires. Semiconducting nanowires of CdTe and CdSe were also examined. The CdTe wires show fast picosecond time scale dynamics, which are assigned to charge carrier trapping at surface states of the wires. In contrast, CdSe nanowires show no dynamics on the time scale of our measurements. For the CdTe nanowires the charge carrier trapping times vary from wire-to-wire, and also vary with position in a single wire. This is attributed to differences in surface chemistry. Overall these experiments illustrate the important of single particle techniques for studying nanomaterials, especially for elucidating how differences in local environment and structure affect dynamics.

  15. Nanochemistry at the atomic scale revealed in hydrogen-induced semiconductor surface metallization.

    PubMed

    Derycke, Vincent; Soukiassian, Patrick G; Amy, Fabrice; Chabal, Yves J; D'angelo, Marie D; Enriquez, Hanna B; Silly, Mathieu G

    2003-04-01

    Passivation of semiconductor surfaces against chemical attack can be achieved by terminating the surface-dangling bonds with a monovalent atom such as hydrogen. Such passivation invariably leads to the removal of all surface states in the bandgap, and thus to the termination of non-metallic surfaces. Here we report the first observation of semiconductor surface metallization induced by atomic hydrogen. This result, established by using photo-electron and photo-absorption spectroscopies and scanning tunnelling techniques, is achieved on a Si-terminated cubic silicon carbide (SiC) surface. It results from competition between hydrogen termination of surface-dangling bonds and hydrogen-generated steric hindrance below the surface. Understanding the ingredient for hydrogen-stabilized metallization directly impacts the ability to eliminate electronic defects at semiconductor interfaces critical for microelectronics, provides a means to develop electrical contacts on high-bandgap chemically passive materials, particularly for interfacing with biological systems, and gives control of surfaces for lubrication, for example of nanomechanical devices.

  16. Preparation methodologies and nano/microstructural evaluation of metal/semiconductor thin films.

    PubMed

    Chen, Zhiwen; Jiao, Zheng; Wu, Minghong; Shek, Chan-Hung; Wu, C M Lawrence; Lai, Joseph K L

    2012-01-01

    Metal/semiconductor thin films are a class of unique materials that are widespread technological applications, particularly in the field of microelectronic devices. Assessment strategies of fractal and tures are of fundamental importance in the development of nano/microdevices. This review presents the preparation methodologies and nano/microstructural evaluation of metal/semiconductor thin films including Au/Ge bilayer films and Pd-Ge alloy thin films, which show in the form of fractals and nanocrystals. Firstly, the extended version of Au/Ge thin films for the fractal crystallization of amorphous Ge and the formation of nanocrystals developed with improved micro- and nanostructured features are described in Section 2. Secondly, the nano/microstructural characteristics of Pd/Ge alloy thin films during annealing have been investigated in detail and described in Section 3. Finally, we will draw the conclusions from the present work as shown in Section 4. It is expected that the preparation methodologies developed and the knowledge of nano/microstructural evolution gained in metal/semiconductor thin films, including Au/Ge bilayer films and Pd-Ge alloy thin films, will provide an important fundamental basis underpinning further interdisciplinary research in these fields such as physics, chemistry, materials science, and nanoscience and nanotechnology, leading to promising exciting opportunities for future technological applications involving these thin films.

  17. Nanochemistry at the atomic scale revealed in hydrogen-induced semiconductor surface metallization

    NASA Astrophysics Data System (ADS)

    Derycke, Vincent; Soukiassian, Patrick G.; Amy, Fabrice; Chabal, Yves J.; D'Angelo, Marie D.; Enriquez, Hanna B.; Silly, Mathieu G.

    2003-04-01

    Passivation of semiconductor surfaces against chemical attack can be achieved by terminating the surface-dangling bonds with a monovalent atom such as hydrogen. Such passivation invariably leads to the removal of all surface states in the bandgap, and thus to the termination of non-metallic surfaces. Here we report the first observation of semiconductor surface metallization induced by atomic hydrogen. This result, established by using photo-electron and photo-absorption spectroscopies and scanning tunnelling techniques, is achieved on a Si-terminated cubic silicon carbide (SiC) surface. It results from competition between hydrogen termination of surface-dangling bonds and hydrogen-generated steric hindrance below the surface. Understanding the ingredient for hydrogen-stabilized metallization directly impacts the ability to eliminate electronic defects at semiconductor interfaces critical for microelectronics, provides a means to develop electrical contacts on high-bandgap chemically passive materials, particularly for interfacing with biological systems, and gives control of surfaces for lubrication, for example of nanomechanical devices.

  18. Modeling electrochemical deposition inside nanotubes to obtain metal-semiconductor multiscale nanocables or conical nanopores.

    PubMed

    Lebedev, Konstantin; Mafé, Salvador; Stroeve, Pieter

    2005-08-04

    Nanocables with a radial metal-semiconductor heterostructure have recently been prepared by electrochemical deposition inside metal nanotubes. First, a bare nanoporous polycarbonate track-etched membrane is coated uniformly with a metal film by electroless deposition. The film forms a working electrode for further deposition of a semiconductor layer that grows radially inside the nanopore when the deposition rate is slow. We propose a new physical model for the nanocable synthesis and study the effects of the deposited species concentration, potential-dependent reaction rate, and nanopore dimensions on the electrochemical deposition. The problem involves both axial diffusion through the nanopore and radial transport to the nanopore surface, with a surface reaction rate that depends on the axial position and the time. This is so because the radial potential drop across the deposited semiconductor layer changes with the layer thickness through the nanopore. Since axially uniform nanocables are needed for most applications, we consider the relative role of reaction and axial diffusion rates on the deposition process. However, in those cases where partial, empty-core deposition should be desirable (e.g., for producing conical nanopores to be used in single nanoparticle detection), we give conditions where asymmetric geometries can be experimentally realized.

  19. Van der Waals metal-semiconductor junction: Weak Fermi level pinning enables effective tuning of Schottky barrier.

    PubMed

    Liu, Yuanyue; Stradins, Paul; Wei, Su-Huai

    2016-04-01

    Two-dimensional (2D) semiconductors have shown great potential for electronic and optoelectronic applications. However, their development is limited by a large Schottky barrier (SB) at the metal-semiconductor junction (MSJ), which is difficult to tune by using conventional metals because of the effect of strong Fermi level pinning (FLP). We show that this problem can be overcome by using 2D metals, which are bounded with 2D semiconductors through van der Waals (vdW) interactions. This success relies on a weak FLP at the vdW MSJ, which is attributed to the suppression of metal-induced gap states. Consequently, the SB becomes tunable and can vanish with proper 2D metals (for example, H-NbS2). This work not only offers new insights into the fundamental properties of heterojunctions but also uncovers the great potential of 2D metals for device applications.

  20. Van der Waals metal-semiconductor junction: Weak Fermi level pinning enables effective tuning of Schottky barrier

    PubMed Central

    Liu, Yuanyue; Stradins, Paul; Wei, Su-Huai

    2016-01-01

    Two-dimensional (2D) semiconductors have shown great potential for electronic and optoelectronic applications. However, their development is limited by a large Schottky barrier (SB) at the metal-semiconductor junction (MSJ), which is difficult to tune by using conventional metals because of the effect of strong Fermi level pinning (FLP). We show that this problem can be overcome by using 2D metals, which are bounded with 2D semiconductors through van der Waals (vdW) interactions. This success relies on a weak FLP at the vdW MSJ, which is attributed to the suppression of metal-induced gap states. Consequently, the SB becomes tunable and can vanish with proper 2D metals (for example, H-NbS2). This work not only offers new insights into the fundamental properties of heterojunctions but also uncovers the great potential of 2D metals for device applications. PMID:27152360

  1. Van der Waals metal-semiconductor junction: Weak Fermi level pinning enables effective tuning of Schottky barrier

    DOE PAGES

    Liu, Yuanyue; Stradins, Paul; Wei, Su -Huai

    2016-04-22

    Two-dimensional (2D) semiconductors have shown great potential for electronic and optoelectronic applications. However, their development is limited by a large Schottky barrier (SB) at the metal-semiconductor junction (MSJ), which is difficult to tune by using conventional metals because of the effect of strong Fermi level pinning (FLP). We show that this problem can be overcome by using 2D metals, which are bounded with 2D semiconductors through van der Waals (vdW) interactions. This success relies on a weak FLP at the vdW MSJ, which is attributed to the suppression of metal-induced gap states. Consequently, the SB becomes tunable and can vanishmore » with proper 2D metals (for example, H-NbS2). This work not only offers new insights into the fundamental properties of heterojunctions but also uncovers the great potential of 2D metals for device applications.« less

  2. Van der Waals metal-semiconductor junction: Weak Fermi level pinning enables effective tuning of Schottky barrier

    SciTech Connect

    Liu, Yuanyue; Stradins, Paul; Wei, Su -Huai

    2016-04-22

    Two-dimensional (2D) semiconductors have shown great potential for electronic and optoelectronic applications. However, their development is limited by a large Schottky barrier (SB) at the metal-semiconductor junction (MSJ), which is difficult to tune by using conventional metals because of the effect of strong Fermi level pinning (FLP). We show that this problem can be overcome by using 2D metals, which are bounded with 2D semiconductors through van der Waals (vdW) interactions. This success relies on a weak FLP at the vdW MSJ, which is attributed to the suppression of metal-induced gap states. Consequently, the SB becomes tunable and can vanish with proper 2D metals (for example, H-NbS2). This work not only offers new insights into the fundamental properties of heterojunctions but also uncovers the great potential of 2D metals for device applications.

  3. Tantalum-based semiconductors for solar water splitting.

    PubMed

    Zhang, Peng; Zhang, Jijie; Gong, Jinlong

    2014-07-07

    Solar energy utilization is one of the most promising solutions for the energy crises. Among all the possible means to make use of solar energy, solar water splitting is remarkable since it can accomplish the conversion of solar energy into chemical energy. The produced hydrogen is clean and sustainable which could be used in various areas. For the past decades, numerous efforts have been put into this research area with many important achievements. Improving the overall efficiency and stability of semiconductor photocatalysts are the research focuses for the solar water splitting. Tantalum-based semiconductors, including tantalum oxide, tantalate and tantalum (oxy)nitride, are among the most important photocatalysts. Tantalum oxide has the band gap energy that is suitable for the overall solar water splitting. The more negative conduction band minimum of tantalum oxide provides photogenerated electrons with higher potential for the hydrogen generation reaction. Tantalates, with tunable compositions, show high activities owning to their layered perovskite structure. (Oxy)nitrides, especially TaON and Ta3N5, have small band gaps to respond to visible-light, whereas they can still realize overall solar water splitting with the proper positions of conduction band minimum and valence band maximum. This review describes recent progress regarding the improvement of photocatalytic activities of tantalum-based semiconductors. Basic concepts and principles of solar water splitting will be discussed in the introduction section, followed by the three main categories regarding to the different types of tantalum-based semiconductors. In each category, synthetic methodologies, influencing factors on the photocatalytic activities, strategies to enhance the efficiencies of photocatalysts and morphology control of tantalum-based materials will be discussed in detail. Future directions to further explore the research area of tantalum-based semiconductors for solar water splitting

  4. Effect of barrier recess on transport and electrostatic interface properties of GaN-based normally-off and normally-on metal oxide semiconductor heterostructure field effect transistors

    NASA Astrophysics Data System (ADS)

    Capriotti, M.; Bahat Treidel, E.; Fleury, C.; Bethge, O.; Ostermaier, C.; Rigato, M.; Lancaster, S. L. C.; Brunner, F.; Detz, H.; Hilt, O.; Würfl, J.; Pogany, D.; Strasser, G.

    2016-11-01

    We perform a comprehensive electrical transport and physical characterization of metal oxide semiconductor heterostructure field effect transistors with ZrO2 gate dielectrics, having partially (referred here as MOS-HFET) and fully (here called true-MOS-FET) recessed GaN/AlGaN/GaN barrier, giving normally-on and normally-off behavior, respectively. The mobility of the MOS-HFETs decreases with the proximity of the Coulomb scattering centers, situated at the ZrO2/AlGaN interface. The effect of the etching procedure and ZrO2 deposition on the formation of the interfacial charges, Nint, is evaluated by X-ray Photoelectron Spectroscopy and by fitting the threshold voltage values to numerical model. For the both device types, the extracted value of Nint lies within 15% around 2.8 × 1013 cm-2, which is of the order of polarization charge, showing that our low-damage three step etching procedure does not introduce extra interface states.

  5. Semiconductor-based, large-area, flexible, electronic devices

    DOEpatents

    Goyal, Amit

    2011-03-15

    Novel articles and methods to fabricate the same resulting in flexible, large-area, triaxially textured, single-crystal or single-crystal-like, semiconductor-based, electronic devices are disclosed. Potential applications of resulting articles are in areas of photovoltaic devices, flat-panel displays, thermophotovoltaic devices, ferroelectric devices, light emitting diode devices, computer hard disc drive devices, magnetoresistance based devices, photoluminescence based devices, non-volatile memory devices, dielectric devices, thermoelectric devices and quantum dot laser devices.

  6. X-ray Characterization of Oxide-based Magnetic Semiconductors

    NASA Astrophysics Data System (ADS)

    Idzerda, Yves

    2008-05-01

    Although the evidence for magnetic semiconductors (not simply semiconductors which are ferromagnetic) is compelling, there is much uncertainty in the mechanism for the polarization of the carriers, suggesting that it must be quite novel. Recent experimental evidence suggests that this mechanism is similar to the polaron percolation theory proposed by Kaminski and Das Sarma,ootnotetextKaminski and S. Das Sarma, Physical Review Letters 88, 247202 (2002). which was recently applied specifically to doped oxides by Coey et al.ootnotetextJ. M. D. Coey, M. Venkatesan, and C. B. Fitzgerald, Nature Materials 4, 173 (2005). where the ferromagnetism is driven by the percolation of polarons generated by defects or dopants. We have used X-ray absorption spectroscopy at the L-edges and K-edges for low concentrations transition metal (TM) doped magnetic oxides (including TiO2, La1-xSrxO3, HfO2, and In2O3). We have found that in most cases, the transition metal assumes a valence consistent with being at a substitutional, and not interstitial site. We have also measured the X-ray Magnetic Circular Dichroism spectra. Although these materials show strong bulk magnetization, we are unable to detect a robust dichroism feature associated with magnetic elements in the host semiconductor. In the cases where a dichroism signal was observed, it was very weak and could be ascribed to a distinct ferromagnetic phase (TM metal cluster, TM oxide particulate, etc.) separate from the host material. This fascinating absence of a dichroic signal and its significant substantiation of important features of the polaron percolation model may help to finally resolve the issue of ferromagnetism in magnetically doped oxides.

  7. Anomalous quantum efficiency for photoconduction and its power dependence in metal oxide semiconductor nanowires.

    PubMed

    Chen, R S; Wang, W C; Lu, M L; Chen, Y F; Lin, H C; Chen, K H; Chen, L C

    2013-08-07

    The quantum efficiency and carrier lifetime that decide the photoconduction (PC) efficiencies in the metal oxide semiconductor nanowires (NWs) have been investigated. The experimental result surprisingly shows that the SnO2, TiO2, WO3, and ZnO NWs reveal extraordinary quantum efficiencies in common, which are over one to three orders of magnitude lower than the theoretical expectation. The surface depletion region (SDR)-controlled photoconductivity is proposed to explain the anomalous quantum efficiency and its power dependence. The inherent difference between the metal oxide nanostructures such as carrier lifetime, carrier concentration, and dielectric constant leading to the distinct PC performance and behavior are also discussed.

  8. 1/f noise in semiconductor and metal nanocrystal solids

    SciTech Connect

    Liu, Heng Lhuillier, Emmanuel Guyot-Sionnest, Philippe

    2014-04-21

    Electrical 1/f noise is measured in thin films of CdSe, CdSe/CdS, ZnO, HgTe quantum dots and Au nanocrystals. The 1/f noise, normalized per nanoparticle, shows no systematic dependence on the nanoparticle material and the coupling material. However, over 10 orders of magnitude, it correlates well with the nearest neighbor conductance suggesting some universal magnitude of the 1/f noise in these granular conductors. In the hopping regime, the main mechanism of 1/f noise is determined to be mobility fluctuated. In the metallic regime obtained with gold nanoparticle films, the noise drops to a similar level as bulk gold films and with a similar temperature dependence.

  9. Electrical Transport Properties of Carbon Nanotube Metal-Semiconductor Heterojunction

    NASA Astrophysics Data System (ADS)

    Talukdar, Keka; Shantappa, Anil

    2016-10-01

    Carbon nanotubes (CNTs) have been proved to have promising applicability in various fields of science and technology. Their fascinating mechanical, electrical, thermal, optical properties have caught the attention of today’s world. We have discussed here the great possibility of using CNTs in electronic devices. CNTs can be both metallic and semiconducting depending on their chirality. When two CNTs of different chirality are joined together via topological defects, they may acquire rectifying diode property. We have joined two tubes of different chiralities through circumferential Stone-Wales defects and calculated their density of states by nearest neighbor tight binding approximation. Transmission function is also calculated to analyze whether the junctions can be used as electronic devices. Different heterojunctions are modeled and analyzed in this study. Internal stresses in the heterojunctions are also calculated by molecular dynamics simulation.

  10. Identifying airborne metal particles sources near an optoelectronic and semiconductor industrial park

    NASA Astrophysics Data System (ADS)

    Chen, Ho-Wen; Chen, Wei-Yea; Chang, Cheng-Nan; Chuang, Yen-Hsun; Lin, Yu-Hao

    2016-06-01

    The recently developed Central Taiwan Science Park (CTSP) in central Taiwan is home to an optoelectronic and semiconductor industrial cluster. Therefore, exploring the elemental compositions and size distributions of airborne particles emitted from the CTSP would help to prevent pollution. This study analyzed size-fractionated metal-rich particle samples collected in upwind and downwind areas of CTSP during Jan. and Oct. 2013 by using micro-orifice uniform deposited impactor (MOUDI). Correlation analysis, hierarchical cluster analysis and particle mass-size distribution analysis are performed to identify the source of metal-rich particle near the CTSP. Analyses of elemental compositions and particle size distributions emitted from the CTSP revealed that the CTSP emits some metals (V, As, In Ga, Cd and Cu) in the ultrafine particles (< 1 μm). The statistical analysis combines with the particle mass-size distribution analysis could provide useful source identification information. In airborne particles with the size of 0.32 μm, Ga could be a useful pollution index for optoelectronic and semiconductor emission in the CTSP. Meanwhile, the ratios of As/Ga concentration at the particle size of 0.32 μm demonstrates that humans near the CTSP would be potentially exposed to GaAs ultrafine particles. That is, metals such as Ga and As and other metals that are not regulated in Taiwan are potentially harmful to human health.

  11. Thickness dependent electronic structure and morphology of rubrene thin films on metal, semiconductor, and dielectric substrates

    NASA Astrophysics Data System (ADS)

    Sinha, Sumona; Mukherjee, M.

    2013-08-01

    The evolution of the electronic structure and morphology of rubrene thin films on noble-metal, semiconductor and dielectric substrates have been investigated as a function of thickness of deposited films by using photoelectron spectroscopy and atomic force microscopy. The clean polycrystalline Au and Ag were used as noble-metals, whereas, H passivated and SiO2 coated Si (100) were used as semiconductors and dielectric substrates. Discussion and comparison on interface dipole, energy level alignment, and surface morphology for the four cases are presented. The formation of dipole at metallic interfaces is found to occur due to push back effect. S parameter obtained from the variation of barrier height with the change of work function of the contacting metal indicates moderately weak interaction between rubrene and the metal substrates. The thickness dependent energy level alignment of the physisorbed rubrene films on different substrates is explained by a dielectric model in terms of electrostatic screening of photo-holes or photoemission final state relaxation energy. Films on all the substrates are found to grow following Stranski-Krastnov type growth mode and are more ordered at higher coverage.

  12. Simple way to engineer metal-semiconductor interface for enhanced performance of perovskite organic lead iodide solar cells.

    PubMed

    Xu, Yuzhuan; Shi, Jiangjian; Lv, Songtao; Zhu, Lifeng; Dong, Juan; Wu, Huijue; Xiao, Yin; Luo, Yanhong; Wang, Shirong; Li, Dongmei; Li, Xianggao; Meng, Qingbo

    2014-04-23

    A thin wide band gap organic semiconductor N,N,N',N'-tetraphenyl-benzidine layer has been introduced by spin-coating to engineer the metal-semiconductor interface in the hole-conductor-free perovskite solar cells. The average cell power conversion efficiency (PCE) has been enhanced from 5.26% to 6.26% after the modification and a highest PCE of 6.71% has been achieved. By the aid of electrochemical impedance spectroscopy and dark current analysis, it is revealed that this modification can increase interfacial resistance of CH3NH3PbI3/Au interface and retard electron recombination process in the metal-semiconductor interface.

  13. Transition-metal dopants in tetrahedrally bonded semiconductors: Symmetry and exchange interactions from tight-binding models

    NASA Astrophysics Data System (ADS)

    Kortan, Victoria Ramaker

    transition metal dopants an important quantity is the exchange interaction between the two, which is a measure of how fast a gate can be operated between the pair and how well entanglement can be created. The exchange interaction between pairs of transition metal dopants has been calculated in diamond for several directions in the (110) plane, and for select transition metal dopants in gallium arsenide. In tetrahedral semiconductors transition metal dopants provide an internal degree of freedom due to the symmetry split d levels and this included functionality makes them special candidates for single spin based quantum technologies as well as physical systems to learn about fundamental physics.

  14. Cross-plane thermal conductivity of (Ti,W)N/(Al,Sc)N metal/semiconductor superlattices

    NASA Astrophysics Data System (ADS)

    Saha, Bivas; Koh, Yee Rui; Comparan, Jonathan; Sadasivam, Sridhar; Schroeder, Jeremy L.; Garbrecht, Magnus; Mohammed, Amr; Birch, Jens; Fisher, Timothy; Shakouri, Ali; Sands, Timothy D.

    2016-01-01

    Reduction of cross-plane thermal conductivity and understanding of the mechanisms of heat transport in nanostructured metal/semiconductor superlattices are crucial for their potential applications in thermoelectric and thermionic energy conversion devices, thermal management systems, and thermal barrier coatings. We have developed epitaxial (Ti,W)N/(Al,Sc)N metal/semiconductor superlattices with periodicity ranging from 1 nm to 240 nm that show significantly lower thermal conductivity compared to the parent TiN/(Al,Sc)N superlattice system. The (Ti,W)N/(Al,Sc)N superlattices grow with [001] orientation on the MgO(001) substrates with well-defined coherent layers and are nominally single crystalline with low densities of extended defects. Cross-plane thermal conductivity (measured by time-domain thermoreflectance) decreases with an increase in the superlattice interface density in a manner that is consistent with incoherent phonon boundary scattering. Thermal conductivity values saturate at 1.7 W m-1K-1 for short superlattice periods possibly due to a delicate balance between long-wavelength coherent phonon modes and incoherent phonon scattering from heavy tungsten atomic sites and superlattice interfaces. First-principles density functional perturbation theory based calculations are performed to model the vibrational spectrum of the individual component materials, and transport models are used to explain the interface thermal conductance across the (Ti,W)N/(Al,Sc)N interfaces as a function of periodicity. The long-wavelength coherent phonon modes are expected to play a dominant role in the thermal transport properties of the short-period superlattices. Our analysis of the thermal transport properties of (Ti,W)N/(Al,Sc)N metal/semiconductor superlattices addresses fundamental questions about heat transport in multilayer materials.

  15. GMAG Dissertation Award Talk: Zero-moment Half-Metallic Ferrimagnetic Semiconductors

    NASA Astrophysics Data System (ADS)

    Jamer, Michelle E.

    2015-03-01

    Low- and zero-moment half-metallic ferrimagnetic semiconductors have been proposed for advanced applications, such as nonvolatile RAM memory and quantum computing. These inverse-Heusler materials could be used to generate spin-polarized electron or hole currents without the associated harmful fringing magnetic fields. Such materials are expected to exhibit low to zero magnetic moment at room temperature, which makes them well-positioned for future spin-based devices. However, these compounds have been shown to suffer from disorder. This work focuses on the synthesis of these compounds and the investigation of their structural, magnetic, and transport properties. Cr2CoGa and Mn3Al thin films were synthesized by molecular beam epitaxy, and V3Al and Cr2CoAl were synthesized via arc-melting. Rietveld analysis was used to determine the degree of ordering in the sublattices as a function of annealing. The atomic moments were measured by X-ray magnetic circular and linear dichroism confirmed antiferromagnetic alignment of sublattices and the desired near-zero moment in several compounds. In collaboration with George E. Sterbinsky, Photon Sciences Directorate, Brookhaven National Laboratory; Dario Arena Photon Sciences Directorate, Brookhaven National Laboratory; Laura H. Lewis, Chemical Engineering, Northeastern University; and Don Heiman, Physics, Northeastern University. NSF-ECCS-1402738, NSF-DMR-0907007.

  16. All-semiconductor metamaterial-based optical circuit board at the microscale

    NASA Astrophysics Data System (ADS)

    Min, Li; Huang, Lirong

    2015-07-01

    The newly introduced metamaterial-based optical circuit, an analogue of electronic circuit, is becoming a forefront topic in the fields of electronics, optics, plasmonics, and metamaterials. However, metals, as the commonly used plasmonic elements in an optical circuit, suffer from large losses at the visible and infrared wavelengths. We propose here a low-loss, all-semiconductor metamaterial-based optical circuit board at the microscale by using interleaved intrinsic GaAs and doped GaAs, and present the detailed design process for various lumped optical circuit elements, including lumped optical inductors, optical capacitors, optical conductors, and optical insulators. By properly combining these optical circuit elements and arranging anisotropic optical connectors, we obtain a subwavelength optical filter, which can always hold band-stop filtering function for various polarization states of the incident electromagnetic wave. All-semiconductor optical circuits may provide a new opportunity in developing low-power and ultrafast components and devices for optical information processing.

  17. All-semiconductor metamaterial-based optical circuit board at the microscale

    SciTech Connect

    Min, Li; Huang, Lirong

    2015-07-07

    The newly introduced metamaterial-based optical circuit, an analogue of electronic circuit, is becoming a forefront topic in the fields of electronics, optics, plasmonics, and metamaterials. However, metals, as the commonly used plasmonic elements in an optical circuit, suffer from large losses at the visible and infrared wavelengths. We propose here a low-loss, all-semiconductor metamaterial-based optical circuit board at the microscale by using interleaved intrinsic GaAs and doped GaAs, and present the detailed design process for various lumped optical circuit elements, including lumped optical inductors, optical capacitors, optical conductors, and optical insulators. By properly combining these optical circuit elements and arranging anisotropic optical connectors, we obtain a subwavelength optical filter, which can always hold band-stop filtering function for various polarization states of the incident electromagnetic wave. All-semiconductor optical circuits may provide a new opportunity in developing low-power and ultrafast components and devices for optical information processing.

  18. Charge transport and mobility engineering in two-dimensional transition metal chalcogenide semiconductors.

    PubMed

    Li, Song-Lin; Tsukagoshi, Kazuhito; Orgiu, Emanuele; Samorì, Paolo

    2016-01-07

    Two-dimensional (2D) van der Waals semiconductors represent the thinnest, air stable semiconducting materials known. Their unique optical, electronic and mechanical properties hold great potential for harnessing them as key components in novel applications for electronics and optoelectronics. However, the charge transport behavior in 2D semiconductors is more susceptible to external surroundings (e.g. gaseous adsorbates from air and trapped charges in substrates) and their electronic performance is generally lower than corresponding bulk materials due to the fact that the surface and bulk coincide. In this article, we review recent progress on the charge transport properties and carrier mobility engineering of 2D transition metal chalcogenides, with a particular focus on the markedly high dependence of carrier mobility on thickness. We unveil the origin of this unique thickness dependence and elaborate the devised strategies to master it for carrier mobility optimization. Specifically, physical and chemical methods towards the optimization of the major factors influencing the extrinsic transport such as electrode/semiconductor contacts, interfacial Coulomb impurities and atomic defects are discussed. In particular, the use of ad hoc molecules makes it possible to engineer the interface with the dielectric and heal the vacancies in such materials. By casting fresh light on the theoretical and experimental studies, we provide a guide for improving the electronic performance of 2D semiconductors, with the ultimate goal of achieving technologically viable atomically thin (opto)electronics.

  19. Creation of Metal and Semiconductor Nanostructures Using DPN Nanolithography Techniques

    DTIC Science & Technology

    2006-02-01

    patterns fabricated by SPM and other techniques; 4) growth of nanowires from catalyst islands fabricated from SPM based deposition method and 5...discovery of strong visible light emission from sulfur doped ZnO nanowires . These achievements not only expanded the scope of SPM based lithographic... nanowires that can lead to the development of future LED light sources with high energy efficiency, saving significant amount of energy used for lighting

  20. Uniform Doping in Quantum-Dots-Based Dilute Magnetic Semiconductor.

    PubMed

    Saha, Avijit; Shetty, Amitha; Pavan, A R; Chattopadhyay, Soma; Shibata, Tomohiro; Viswanatha, Ranjani

    2016-07-07

    Effective manipulation of magnetic spin within a semiconductor leading to a search for ferromagnets with semiconducting properties has evolved into an important field of dilute magnetic semiconductors (DMS). Although a lot of research is focused on understanding the still controversial origin of magnetism, efforts are also underway to develop new materials with higher magnetic temperatures for spintronics applications. However, so far, efforts toward quantum-dots(QDs)-based DMS materials are plagued with problems of phase separation, leading to nonuniform distribution of dopant ions. In this work, we have developed a strategy to synthesize highly crystalline, single-domain DMS system starting from a small magnetic core and allowing it to diffuse uniformly inside a thick CdS semiconductor matrix and achieve DMS QDs. X-ray absorption fine structure (XAFS) spectroscopy and energy-dispersive X-ray spectroscopy-scanning transmission electron microscopy (STEM-EDX) indicates the homogeneous distribution of magnetic impurities inside the semiconductor QDs leading to superior magnetic property. Further, the versatility of this technique was demonstrated by obtaining ultra large particles (∼60 nm) with uniform doping concentration as well as demonstrating the high quality magnetic response.

  1. Method of plasma etching Ga-based compound semiconductors

    DOEpatents

    Qiu, Weibin; Goddard, Lynford L.

    2012-12-25

    A method of plasma etching Ga-based compound semiconductors includes providing a process chamber and a source electrode adjacent to the process chamber. The process chamber contains a sample comprising a Ga-based compound semiconductor. The sample is in contact with a platen which is electrically connected to a first power supply, and the source electrode is electrically connected to a second power supply. The method includes flowing SiCl.sub.4 gas into the chamber, flowing Ar gas into the chamber, and flowing H.sub.2 gas into the chamber. RF power is supplied independently to the source electrode and the platen. A plasma is generated based on the gases in the process chamber, and regions of a surface of the sample adjacent to one or more masked portions of the surface are etched to create a substantially smooth etched surface including features having substantially vertical walls beneath the masked portions.

  2. Barrier height enhancement of metal/semiconductor contact by an enzyme biofilm interlayer

    NASA Astrophysics Data System (ADS)

    Ocak, Yusuf Selim; Gul Guven, Reyhan; Tombak, Ahmet; Kilicoglu, Tahsin; Guven, Kemal; Dogru, Mehmet

    2013-06-01

    A metal/interlayer/semiconductor (Al/enzyme/p-Si) MIS device was fabricated using α-amylase enzyme as a thin biofilm interlayer. It was observed that the device showed an excellent rectifying behavior and the barrier height value of 0.78 eV for Al/α-amylase/p-Si was meaningfully larger than the one of 0.58 eV for conventional Al/p-Si metal/semiconductor (MS) contact. Enhancement of the interfacial potential barrier of Al/p-Si MS diode was realized using enzyme interlayer by influencing the space charge region of Si semiconductor. The electrical properties of the structure were executed by the help of current-voltage and capacitance-voltage measurements. The photovoltaic properties of the structure were executed under a solar simulator with AM1.5 global filter between 40 and 100 mW/cm2 illumination conditions. It was also reported that the α-amylase enzyme produced from Bacillus licheniformis had a 3.65 eV band gap value obtained from optical method.

  3. Ionic Liquid Activation of Amorphous Metal-Oxide Semiconductors for Flexible Transparent Electronic Devices

    DOE PAGES

    Pudasaini, Pushpa Raj; Noh, Joo Hyon; Wong, Anthony T.; ...

    2016-02-09

    To begin this abstract, amorphous metal-oxide semiconductors offer the high carrier mobilities and excellent large-area uniformity required for high performance, transparent, flexible electronic devices; however, a critical bottleneck to their widespread implementation is the need to activate these materials at high temperatures which are not compatible with flexible polymer substrates. The highly controllable activation of amorphous indium gallium zinc oxide semiconductor channels using ionic liquid gating at room temperature is reported. Activation is controlled by electric field-induced oxygen migration across the ionic liquid-semiconductor interface. In addition to activation of unannealed devices, it is shown that threshold voltages of a transistormore » can be linearly tuned between the enhancement and depletion modes. Finally, the first ever example of transparent flexible thin film metal oxide transistor on a polyamide substrate created using this simple technique is demonstrated. Finally, this study demonstrates the potential of field-induced activation as a promising alternative to traditional postdeposition thermal annealing which opens the door to wide scale implementation into flexible electronic applications.« less

  4. Ionic Liquid Activation of Amorphous Metal-Oxide Semiconductors for Flexible Transparent Electronic Devices

    SciTech Connect

    Pudasaini, Pushpa Raj; Noh, Joo Hyon; Wong, Anthony T.; Ovchinnikova, Olga S.; Haglund, Amanda V.; Dai, Sheng; Ward, Thomas Zac; Mandrus, David; Rack, Philip D.

    2016-02-09

    To begin this abstract, amorphous metal-oxide semiconductors offer the high carrier mobilities and excellent large-area uniformity required for high performance, transparent, flexible electronic devices; however, a critical bottleneck to their widespread implementation is the need to activate these materials at high temperatures which are not compatible with flexible polymer substrates. The highly controllable activation of amorphous indium gallium zinc oxide semiconductor channels using ionic liquid gating at room temperature is reported. Activation is controlled by electric field-induced oxygen migration across the ionic liquid-semiconductor interface. In addition to activation of unannealed devices, it is shown that threshold voltages of a transistor can be linearly tuned between the enhancement and depletion modes. Finally, the first ever example of transparent flexible thin film metal oxide transistor on a polyamide substrate created using this simple technique is demonstrated. Finally, this study demonstrates the potential of field-induced activation as a promising alternative to traditional postdeposition thermal annealing which opens the door to wide scale implementation into flexible electronic applications.

  5. Anomalous quantum efficiency for photoconduction and its power dependence in metal oxide semiconductor nanowires

    NASA Astrophysics Data System (ADS)

    Chen, R. S.; Wang, W. C.; Lu, M. L.; Chen, Y. F.; Lin, H. C.; Chen, K. H.; Chen, L. C.

    2013-07-01

    The quantum efficiency and carrier lifetime that decide the photoconduction (PC) efficiencies in the metal oxide semiconductor nanowires (NWs) have been investigated. The experimental result surprisingly shows that the SnO2, TiO2, WO3, and ZnO NWs reveal extraordinary quantum efficiencies in common, which are over one to three orders of magnitude lower than the theoretical expectation. The surface depletion region (SDR)-controlled photoconductivity is proposed to explain the anomalous quantum efficiency and its power dependence. The inherent difference between the metal oxide nanostructures such as carrier lifetime, carrier concentration, and dielectric constant leading to the distinct PC performance and behavior are also discussed.The quantum efficiency and carrier lifetime that decide the photoconduction (PC) efficiencies in the metal oxide semiconductor nanowires (NWs) have been investigated. The experimental result surprisingly shows that the SnO2, TiO2, WO3, and ZnO NWs reveal extraordinary quantum efficiencies in common, which are over one to three orders of magnitude lower than the theoretical expectation. The surface depletion region (SDR)-controlled photoconductivity is proposed to explain the anomalous quantum efficiency and its power dependence. The inherent difference between the metal oxide nanostructures such as carrier lifetime, carrier concentration, and dielectric constant leading to the distinct PC performance and behavior are also discussed. Electronic supplementary information (ESI) available. See DOI: 10.1039/c3nr01635h

  6. Metallic precipitate contribution to carrier generation in metal-oxide-semiconductor capacitors due to the Schottky effect

    NASA Astrophysics Data System (ADS)

    Negoita, M. D.; Tan, T. Y.

    2004-01-01

    The contribution of metallic precipitates to carrier generation has been modeled for metal-oxide-semiconductor (MOS) capacitor devices fabricated using Si, with the precipitate located in the depletion region of the device. The physical mechanism responsible for the electrical activity of the metallic precipitate is attributed to the Schottky junction property between the precipitate and the Si matrix materials. The precipitate serves as a highly effective carrier generation center when the capacitor is switched from the accumulation mode to the deep depletion mode. As a practical case, the electrical activity of the Cu3Si precipitate is investigated and the impact of the precipitate located at different positions within the depleted region of the MOS capacitor on the device performance degradation is analyzed.

  7. Antiferromagnetic half-metals, gapless half-metals, and spin gapless semiconductors: The D0{sub 3}-type Heusler alloys

    SciTech Connect

    Gao, G. Y. Yao, Kai-Lun

    2013-12-02

    High-spin-polarization materials are desired for the realization of high-performance spintronic devices. We combine recent experimental and theoretical findings to theoretically design several high-spin-polarization materials in binary D0{sub 3}-type Heusler alloys: gapless (zero-gap) half-metallic ferrimagnets of V{sub 3}Si and V{sub 3}Ge, half-metallic antiferromagnets of Mn{sub 3}Al and Mn{sub 3}Ga, half-metallic ferrimagnets of Mn{sub 3}Si and Mn{sub 3}Ge, and a spin gapless semiconductor of Cr{sub 3}Al. The high spin polarization, zero net magnetic moment, zero energy gap, and slight disorder compared to the ternary and quaternary Heusler alloys make these binary materials promising candidates for spintronic applications. All results are obtained by the electronic structure calculations from first-principles.

  8. Improved Radio Frequency Power Characteristics of Complementary Metal-Oxide-Semiconductor-Compatible Asymmetric-Lightly-Doped-Drain Metal-Oxide-Semiconductor Transistor

    NASA Astrophysics Data System (ADS)

    Tsu Chang,; Hsuan-ling Kao,; Y. J. Chen,; Albert Chin,

    2010-03-01

    We have characterized and modeled the radio frequency (RF) power performance of a 0.18 μm asymmetric-lightly-doped-drain metal-oxide-semiconductor field-effect transistor (LDD MOSFET). In comparison with the conventional 0.18 μm MOSFET, this asymmetric-LDD device shows a larger power density of 0.54 W/mm, and 8 dB better adjacent channel power ratio (ACPR) linearity at 2.4 GHz from the improved twice DC breakdown voltage of 6.9 V. These significant improvements of RF power performance in the asymmetric-LDD transistor are important for the medium RF power amplifier application.

  9. Surface plasmon polariton amplification in metal-semiconductor structures.

    PubMed

    Fedyanin, Dmitry Yu; Arsenin, Aleksey V

    2011-06-20

    We propose a novel scheme of surface plasmon polariton (SPP) amplification that is based on a minority carrier injection in a Schottky diode. This scheme uses compact electrical pumping instead of bulky optical pumping. Compact size and a planar structure of the proposed amplifier allow one to utilize it in integrated plasmonic circuits and couple it easily to passive plasmonic devices. Moreover, this technique can be used to obtain surface plasmon lasing.

  10. THz semiconductor-based front-end receiver technology for space applications

    NASA Technical Reports Server (NTRS)

    Mehdi, Imran; Siegel, Peter

    2004-01-01

    Advances in the design and fabrication of very low capacitance planar Schottky diodes and millimeter-wave power amplifiers, more accurate device and circuit models for commercial 3-D electromagnetic simulators, and the availability of both MEMS and high precision metal machining, have enabled RF engineers to extend traditional waveguide-based sensor and source technologies well into the TI-Iz frequency regime. This short paper will highlight recent progress in realizing THz space-qualified receiver front-ends based on room temperature semiconductor devices.

  11. Ultrasensitive NO2 Sensor Based on Ohmic Metal-Semiconductor Interfaces of Electrolytically Exfoliated Graphene/Flame-Spray-Made SnO2 Nanoparticles Composite Operating at Low Temperatures.

    PubMed

    Tammanoon, Nantikan; Wisitsoraat, Anurat; Sriprachuabwong, Chakrit; Phokharatkul, Ditsayut; Tuantranont, Adisorn; Phanichphant, Sukon; Liewhiran, Chaikarn

    2015-11-04

    In this work, flame-spray-made undoped SnO2 nanoparticles were loaded with 0.1-5 wt % electrolytically exfoliated graphene and systematically studied for NO2 sensing at low working temperatures. Characterizations by X-ray diffraction, transmission/scanning electron microscopy, and Raman and X-ray photoelectron spectroscopy indicated that high-quality multilayer graphene sheets with low oxygen content were widely distributed within spheriodal nanoparticles having polycrystalline tetragonal SnO2 phase. The 10-20 μm thick sensing films fabricated by spin coating on Au/Al2O3 substrates were tested toward NO2 at operating temperatures ranging from 25 to 350 °C in dry air. Gas-sensing results showed that the optimal graphene loading level of 0.5 wt % provided an ultrahigh response of 26,342 toward 5 ppm of NO2 with a short response time of 13 s and good recovery stabilization at a low optimal operating temperature of 150 °C. In addition, the optimal sensor also displayed high sensor response and relatively short response time of 171 and 7 min toward 5 ppm of NO2 at room temperature (25 °C). Furthermore, the sensors displayed very high NO2 selectivity against H2S, NH3, C2H5OH, H2, and H2O. Detailed mechanisms for the drastic NO2 response enhancement by graphene were proposed on the basis of the formation of graphene-undoped SnO2 ohmic metal-semiconductor junctions and accessible interfaces of graphene-SnO2 nanoparticles. Therefore, the electrolytically exfoliated graphene-loaded FSP-made SnO2 sensor is a highly promising candidate for fast, sensitive, and selective detection of NO2 at low operating temperatures.

  12. Semiconductor wire array structures, and solar cells and photodetectors based on such structures

    SciTech Connect

    Kelzenberg, Michael D.; Atwater, Harry A.; Briggs, Ryan M.; Boettcher, Shannon W.; Lewis, Nathan S.; Petykiewicz, Jan A.

    2014-08-19

    A structure comprising an array of semiconductor structures, an infill material between the semiconductor materials, and one or more light-trapping elements is described. Photoconverters and photoelectrochemical devices based on such structure also described.

  13. Stark spectroscopy of CuPc organic semiconductor with a submicron metal-electrode grating

    NASA Astrophysics Data System (ADS)

    Blinov, L. M.; Lazarev, V. V.; Yudin, S. G.; Palto, S. P.

    2016-02-01

    The optical and electro-optical properties of organic copper phthalocyanine semiconductor (α- CuPc) have been investigated by Stark (electroabsorption) spectroscopy using a metal electrode grating with a submicron (0.88 μm) interelectrode distance. Differences between dipole moments (Δμ) and polarizabilities (Δα) in the excited and ground states of α-CuPc are measured for a nanoscale semiconductor film. It is concluded that the extremely high values of Δμ and Δα are in principle not parameters of individual α-CuPc molecules: they are determined by exciton effects specifically in the polycrystalline medium with a characteristic morphology of hyperfine films, which depends on the structure of the samples and their fabrication technology.

  14. Modeling of n-InAs metal oxide semiconductor capacitors with high-κ gate dielectric

    SciTech Connect

    Babadi, A. S. Lind, E.; Wernersson, L. E.

    2014-12-07

    A qualitative analysis on capacitance-voltage and conductance data for high-κ/InAs capacitors is presented. Our measured data were evaluated with a full equivalent circuit model, including both majority and minority carriers, as well as interface and border traps, formulated for narrow band gap metal-oxide-semiconductor capacitors. By careful determination of interface trap densities, distribution of border traps across the oxide thickness, and taking into account the bulk semiconductor response, it is shown that the trap response has a strong effect on the measured capacitances. Due to the narrow bandgap of InAs, there can be a large surface concentration of electrons and holes even in depletion, so a full charge treatment is necessary.

  15. Cu2O-based solar cells using oxide semiconductors

    NASA Astrophysics Data System (ADS)

    Minami, Tadatsugu; Nishi, Yuki; Miyata, Toshihiro

    2016-01-01

    We describe significant improvements of the photovoltaic properties that were achieved in Al-doped ZnO (AZO)/n-type oxide semiconductor/p-type Cu2O heterojunction solar cells fabricated using p-type Cu2O sheets prepared by thermally oxidizing Cu sheets. The multicomponent oxide thin film used as the n-type semiconductor layer was prepared with various chemical compositions on non-intentionally heated Cu2O sheets under various deposition conditions using a pulsed laser deposition method. In Cu2O-based heterojunction solar cells fabricated using various ternary compounds as the n-type oxide thin-film layer, the best photovoltaic performance was obtained with an n-ZnGa2O4 thin-film layer. In most of the Cu2O-based heterojunction solar cells using multicomponent oxides composed of combinations of various binary compounds, the obtained photovoltaic properties changed gradually as the chemical composition was varied. However, with the ZnO-MgO and Ga2O3-Al2O3 systems, higher conversion efficiencies (η) as well as a high open circuit voltage (Voc) were obtained by using a relatively small amount of MgO or Al2O3, e.g., (ZnO)0.91-(MgO)0.09 and (Ga2O3)0.975-(Al2O3)0.025, respectively. When Cu2O-based heterojunction solar cells were fabricated using Al2O3-Ga2O3-MgO-ZnO (AGMZO) multicomponent oxide thin films deposited with metal atomic ratios of 10, 60, 10 and 20 at.% for the Al, Ga, Mg and Zn, respectively, a high Voc of 0.98 V and an η of 4.82% were obtained. In addition, an enhanced η and an improved fill factor could be achieved in AZO/n-type multicomponent oxide/p-type Cu2O heterojunction solar cells fabricated using Na-doped Cu2O (Cu2O:Na) sheets that featured a resistivity controlled by optimizing the post-annealing temperature and duration. Consequently, an η of 6.25% and a Voc of 0.84 V were obtained in a MgF2/AZO/n-(Ga2O3-Al2O3)/p-Cu2O:Na heterojunction solar cell fabricated using a Cu2O:Na sheet with a resistivity of approximately 10 Ω·cm and a (Ga0.975Al0

  16. Ferroelectric switching of poly(vinylidene difluoride-trifluoroethylene) in metal-ferroelectric-semiconductor non-volatile memories with an amorphous oxide semiconductor

    NASA Astrophysics Data System (ADS)

    Gelinck, G. H.; van Breemen, A. J. J. M.; Cobb, B.

    2015-03-01

    Ferroelectric polarization switching of poly(vinylidene difluoride-trifluoroethylene) is investigated in different thin-film device structures, ranging from simple capacitors to dual-gate thin-film transistors (TFT). Indium gallium zinc oxide, a high mobility amorphous oxide material, is used as semiconductor. We find that the ferroelectric can be polarized in both directions in the metal-ferroelectric-semiconductor (MFS) structure and in the dual-gate TFT under certain biasing conditions, but not in the single-gate thin-film transistors. These results disprove the common belief that MFS structures serve as a good model system for ferroelectric polarization switching in thin-film transistors.

  17. Ferroelectric switching of poly(vinylidene difluoride-trifluoroethylene) in metal-ferroelectric-semiconductor non-volatile memories with an amorphous oxide semiconductor

    SciTech Connect

    Gelinck, G. H.; Breemen, A. J. J. M. van; Cobb, B.

    2015-03-02

    Ferroelectric polarization switching of poly(vinylidene difluoride-trifluoroethylene) is investigated in different thin-film device structures, ranging from simple capacitors to dual-gate thin-film transistors (TFT). Indium gallium zinc oxide, a high mobility amorphous oxide material, is used as semiconductor. We find that the ferroelectric can be polarized in both directions in the metal-ferroelectric-semiconductor (MFS) structure and in the dual-gate TFT under certain biasing conditions, but not in the single-gate thin-film transistors. These results disprove the common belief that MFS structures serve as a good model system for ferroelectric polarization switching in thin-film transistors.

  18. Chemically Derivatized Semiconductor Photoelectrodes.

    ERIC Educational Resources Information Center

    Wrighton, Mark S.

    1983-01-01

    Deliberate modification of semiconductor photoelectrodes to improve durability and enhance rate of desirable interfacial redox processes is discussed for a variety of systems. Modification with molecular-based systems or with metals/metal oxides yields results indicating an important role for surface modification in devices for fundamental study…

  19. Charging and exciton-mediated decharging of metal nanoparticles in organic semiconductor matrices

    SciTech Connect

    Ligorio, Giovanni; Vittorio Nardi, Marco Christodoulou, Christos; Florea, Ileana; Ersen, Ovidiu; Monteiro, Nicolas-Crespo; Brinkmann, Martin; Koch, Norbert

    2014-04-21

    Gold nanoparticles (Au-NPs) were deposited on the surface of n- and p-type organic semiconductors to form defined model systems for charge storage based electrically addressable memory elements. We used ultraviolet photoelectron spectroscopy to study the electronic properties and found that the Au-NPs become positively charged because of photoelectron emission, evidenced by spectral shifts to higher binding energy. Upon illumination with light that can be absorbed by the organic semiconductors, dynamic charge neutrality of the Au-NPs could be re-established through electron transfer from excitons. The light-controlled charge state of the Au-NPs could add optical addressability to memory elements.

  20. Method of plasma etching GA-based compound semiconductors

    DOEpatents

    Qiu, Weibin; Goddard, Lynford L.

    2013-01-01

    A method of plasma etching Ga-based compound semiconductors includes providing a process chamber and a source electrode adjacent thereto. The chamber contains a Ga-based compound semiconductor sample in contact with a platen which is electrically connected to a first power supply, and the source electrode is electrically connected to a second power supply. SiCl.sub.4 and Ar gases are flowed into the chamber. RF power is supplied to the platen at a first power level, and RF power is supplied to the source electrode. A plasma is generated. Then, RF power is supplied to the platen at a second power level lower than the first power level and no greater than about 30 W. Regions of a surface of the sample adjacent to one or more masked portions of the surface are etched at a rate of no more than about 25 nm/min to create a substantially smooth etched surface.

  1. Semiconductor Nanocrystals-Based White Light Emitting Diodes

    SciTech Connect

    Dai, Quanqin; Hu, Michael Z.; Duty, Chad E

    2010-01-01

    In response to the demands for energy and the concerns of global warming and climate change, energy efficient and environmentally friendly solid state lighting, such as white light emitting diodes (WLEDs), is considered to be the most promising and suitable light source. Because of their small size, high efficiency, and long lifetime, WLEDs based on colloidal semiconductor nanocrystals (or quantum dots) are emerging as a completely new technology platform for the development of flat-panel displays and solid state lighting, exhibiting the potential to replace the conventionally used incandescent and fluorescent lamps. This replacement could cut the ever-increasing energy consumption, solve the problem of rapidly depleting fossil fuel reserves, and improve the quality of the global environment. In this review, we highlight the recent progress in semiconductor nanocrystals-based WLEDs, compare different approaches for generating white light, and discuss the benefits and challenges of the solid state lighting technology.

  2. Semiconductor-Nanocrystals-Based White Light-Emitting Diodes

    SciTech Connect

    Dai, Quanqin; Duty, Chad E; Hu, Michael Z.

    2010-01-01

    In response to the demands for energy and the concerns of global warming and climate change, energy efficient and environmentally friendly solid-state lighting, such as white lightemitting diodes (WLEDs), is considered to be the most promising and suitable light source. Because of their small size, high efficiency, and long lifetime, WLEDs based on colloidal semiconductor nanocrystals (or quantum dots) are emerging as a completely new technology platform for the development of flat-panel displays and solid-state lighting, exhibiting the potential to replace the conventionally used incandescent and fluorescent lamps. This replacement can cut the ever-increasing level of energy consumption, solve the problem of rapidly depleting fossil fuel reserves, and improve the quality of the global environment. In this review, the recent progress in semiconductor-nanocrystals-based WLEDs is highlighted, the different approaches for generating white light are compared, and the benefits and challenges of the solid-state lighting technology are discussed.

  3. Cascadable all-optical inverter based on a nonlinear vertical-cavity semiconductor optical amplifier.

    PubMed

    Zhang, Haijiang; Wen, Pengyue; Esener, Sadik

    2007-07-01

    We report, for the first time to our knowledge, the operation of a cascadable, low-optical-switching-power(~10 microW) small-area (~100 microm(2)) high-speed (80 ps fall time) all-optical inverter. This inverter employs cross-gain modulation, polarization gain anisotropy, and highly nonlinear gain characteristics of an electrically pumped vertical-cavity semiconductor optical amplifier (VCSOA). The measured transfer characteristics of such an optical inverter resemble those of standard electronic metal-oxide semiconductor field-effect transistor-based inverters exhibiting high noise margin and high extinction ratio (~9.3 dB), making VCSOAs an ideal building block for all-optical logic and memory.

  4. A novel lateral diffused metal oxide semiconductor (LDMOS) by attracting the electric field Lines

    NASA Astrophysics Data System (ADS)

    Orouji, Ali A.; Hanaei, Mahsa

    2015-11-01

    In this paper, a novel silicon on insulator (SOI) lateral diffused metal oxide semiconductor (LDMOS) transistor with high voltage and high frequency performance is presented. In this work we try to reduce the electric field crowding in the drift region. The proposed structure consists of a metal in the buried oxide and also connected to the source. The inserted metal attracts the electric field lines in the buried oxide. It causes 67% improvement in the breakdown voltage in comparison with a conventional SOI-LDMOS (C-LDMOS). Our simulations with two dimensional ATLAS simulator show that the gate-drain capacitance improves in the proposed structure. The unilateral power gain also enhances. So, the proposed structure is suitable for high voltage and high frequency applications.

  5. Laser Spectroscopy of Small Metal and Semiconductor Molecules

    NASA Astrophysics Data System (ADS)

    Winstead, Christopher Brooks

    1995-01-01

    An apparatus consisting of a laser vaporization cluster source coupled to a time-of-flight mass spectrometer has been implemented to facilitate the mass-selected spectroscopy of small silver and silicon molecules. Resonantly enhanced multiphoton ionization (REMPI) studies have revealed a previously unknown silver dimer excited electronic state via a forbidden transition near 46870 cm^ {-1}. This state lies in near perfect double resonance with the lower energy A ^1 Sigma_sp{rm u}{+}( rm v^' = 3) >= X ^Sigma_sp{rm g}{+}({rm v^{' '}} = 0) transition, leading to an anomalously large single color Ag_2 ionization signal near 426.7 nm. Symmetry selection rules allow an identification of the new state symmetry as 1_{rm g} or 0 _sp{rm g}{+}. Additional REMPI investigations of the A ^1Sigma _sp{rm u}{+} >=ts X ^1Sigma_sp {rm g}{+} transition yield a new measurement of the Ag_2 ionization potential (IP) and resolve a discrepancy in the reported Ag_2 IP values. The importance of field ionization effects on the observed REMPI spectra is also demonstrated. The spectroscopy of the H ^3Sigma _sp{rm u}{-} state of silicon dimer has been investigated using a combination of laser induced fluorescence and resonant two-photon ionization techniques. Measurements of the isotope induced bandhead shifts for the Si_2 H ^3 Sigma_sp{rm u}{-} >=ts X ^3Sigma_sp {rm g}{-} transition reveal that the previously accepted vibrational numbering of the H ^3Sigma_sp{rm u}{-} state is incorrect. Revised molecular constants based on the new vibrational numbering scheme are T_{rm e} = 24151.86 cm^{-1}, omega_{rm e} = 279.28 cm^{-1}, omega _{rm e}chi_{rm e} = 1.99 cm^{-1} , B_{rm e} = 0.17255 cm^{-1}, and alpha_{rm e} = 0.00135 cm^{-1}. A comparison of experimentally obtained and simulated dispersed laser induced fluorescence spectra demonstrates the improved accuracy of these new constants. Resonant two-photon ionization studies of the H ^3Sigma_sp {rm u}{-} state have also allowed the most accurate

  6. Energy Level Alignment at Metal/Solution-Processed Organic Semiconductor Interfaces.

    PubMed

    Atxabal, Ainhoa; Braun, Slawomir; Arnold, Thorsten; Sun, Xiangnan; Parui, Subir; Liu, Xianjie; Gozalvez, Cristian; Llopis, Roger; Mateo-Alonso, Aurelio; Casanova, Felix; Ortmann, Frank; Fahlman, Mats; Hueso, Luis E

    2017-03-15

    Energy barriers between the metal Fermi energy and the molecular levels of organic semiconductor devoted to charge transport play a fundamental role in the performance of organic electronic devices. Typically, techniques such as electron photoemission spectroscopy, Kelvin probe measurements, and in-device hot-electron spectroscopy have been applied to study these interfacial energy barriers. However, so far there has not been any direct method available for the determination of energy barriers at metal interfaces with n-type polymeric semiconductors. This study measures and compares metal/solution-processed electron-transporting polymer interface energy barriers by in-device hot-electron spectroscopy and ultraviolet photoemission spectroscopy. It not only demonstrates in-device hot-electron spectroscopy as a direct and reliable technique for these studies but also brings it closer to technological applications by working ex situ under ambient conditions. Moreover, this study determines that the contamination layer coming from air exposure does not play any significant role on the energy barrier alignment for charge transport. The theoretical model developed for this work confirms all the experimental observations.

  7. Optical properties of semiconductor-metal composite thin films in the infrared region

    NASA Astrophysics Data System (ADS)

    Nagendra, C. L.; Lamb, James L.

    1995-07-01

    Germanium:silver (Ge:Ag) composite thin films having different concentrations of Ag, ranging from 7% to 40%, have been prepared by dc cosputtering of Ge and Ag. The films' surface morphology and optical properties have been characterized using transmission electron microscopy and infrared spectrophotometry. It is seen that, although the films that contain lower concentrations of Ag have islandlike morphology (i.e., Ag particles distributed in a Ge matrix), the higher metallic concentration films tend to have a symmetric distribution of Ag and Ge. The optical constants (i.e., refractive index n and absorption index k) derived from the measured optical properties show a semiconductor behavior even as high as 40% of Ag concentration, beyond which the metallic properties dominate over the entire infrared spectrum. Comparison of the n and k data with the two well-known effective medium theories, namely, the Maxwell-Garnett theory and the Bruggeman theory, shows that both theories have limited scope in predicting the optical properties of semiconductor-metal composite films in the infrared region. However, an empirical polynomial equation can simulate the experimental

  8. Insulator charging limits direct current across tunneling metal-insulator-semiconductor junctions

    SciTech Connect

    Vilan, Ayelet

    2016-01-07

    Molecular electronics studies how the molecular nature affects the probability of charge carriers to tunnel through the molecules. Nevertheless, transport is also critically affected by the contacts to the molecules, an aspect that is often overlooked. Specifically, the limited ability of non-metallic contacts to maintain the required charge balance across the fairly insulating molecule often have dramatic effects. This paper shows that in the case of lead/organic monolayer-silicon junctions, a charge balance is responsible for an unusual current scaling, with the junction diameter (perimeter), rather than its area. This is attributed to the balance between the 2D charging at the metal/insulator interface and the 3D charging of the semiconductor space-charge region. A derivative method is developed to quantify transport across tunneling metal-insulator-semiconductor junctions; this enables separating the tunneling barrier from the space-charge barrier for a given current-voltage curve, without complementary measurements. The paper provides practical tools to analyze specific molecular junctions compatible with existing silicon technology, and demonstrates the importance of contacts' physics in modeling charge transport across molecular junctions.

  9. Optically induced transport through semiconductor-based molecular electronics

    NASA Astrophysics Data System (ADS)

    Li, Guangqi; Fainberg, Boris D.; Seideman, Tamar

    2015-04-01

    A tight binding model is used to investigate photoinduced tunneling current through a molecular bridge coupled to two semiconductor electrodes. A quantum master equation is developed within a non-Markovian theory based on second-order perturbation theory with respect to the molecule-semiconductor electrode coupling. The spectral functions are generated using a one dimensional alternating bond model, and the coupling between the molecule and the electrodes is expressed through a corresponding correlation function. Since the molecular bridge orbitals are inside the bandgap between the conduction and valence bands, charge carrier tunneling is inhibited in the dark. Subject to the dipole interaction with the laser field, virtual molecular states are generated via the absorption and emission of photons, and new tunneling channels open. Interesting phenomena arising from memory are noted. Such a phenomenon could serve as a switch.

  10. Optically induced transport through semiconductor-based molecular electronics

    SciTech Connect

    Li, Guangqi; Seideman, Tamar; Fainberg, Boris D.

    2015-04-21

    A tight binding model is used to investigate photoinduced tunneling current through a molecular bridge coupled to two semiconductor electrodes. A quantum master equation is developed within a non-Markovian theory based on second-order perturbation theory with respect to the molecule-semiconductor electrode coupling. The spectral functions are generated using a one dimensional alternating bond model, and the coupling between the molecule and the electrodes is expressed through a corresponding correlation function. Since the molecular bridge orbitals are inside the bandgap between the conduction and valence bands, charge carrier tunneling is inhibited in the dark. Subject to the dipole interaction with the laser field, virtual molecular states are generated via the absorption and emission of photons, and new tunneling channels open. Interesting phenomena arising from memory are noted. Such a phenomenon could serve as a switch.

  11. Content-Based Image Retrieval for Semiconductor Process Characterization

    NASA Astrophysics Data System (ADS)

    Tobin, Kenneth W.; Karnowski, Thomas P.; Arrowood, Lloyd F.; Ferrell, Regina K.; Goddard, James S.; Lakhani, Fred

    2002-12-01

    Image data management in the semiconductor manufacturing environment is becoming more problematic as the size of silicon wafers continues to increase, while the dimension of critical features continues to shrink. Fabricators rely on a growing host of image-generating inspection tools to monitor complex device manufacturing processes. These inspection tools include optical and laser scattering microscopy, confocal microscopy, scanning electron microscopy, and atomic force microscopy. The number of images that are being generated are on the order of 20,000 to 30,000 each week in some fabrication facilities today. Manufacturers currently maintain on the order of 500,000 images in their data management systems for extended periods of time. Gleaning the historical value from these large image repositories for yield improvement is difficult to accomplish using the standard database methods currently associated with these data sets (e.g., performing queries based on time and date, lot numbers, wafer identification numbers, etc.). Researchers at the Oak Ridge National Laboratory have developed and tested a content-based image retrieval technology that is specific to manufacturing environments. In this paper, we describe the feature representation of semiconductor defect images along with methods of indexing and retrieval, and results from initial field-testing in the semiconductor manufacturing environment.

  12. Process for producing chalcogenide semiconductors

    DOEpatents

    Noufi, Rommel; Chen, Yih-Wen

    1987-01-01

    A process for producing chalcogenide semiconductor material is disclosed. The process includes forming a base metal layer and then contacting this layer with a solution having a low pH and containing ions from at least one chalcogen to chalcogenize the layer and form the chalcogenide semiconductor material.

  13. Process for producing chalcogenide semiconductors

    DOEpatents

    Noufi, R.; Chen, Y.W.

    1985-04-30

    A process for producing chalcogenide semiconductor material is disclosed. The process includes forming a base metal layer and then contacting this layer with a solution having a low pH and containing ions from at least one chalcogen to chalcogenize the layer and form the chalcogenide semiconductor material.

  14. A low-voltage alterable EEPROM with Metal-Oxide-Nitride-Oxide-Semiconductor /MONOS/ structures

    NASA Astrophysics Data System (ADS)

    Suzuki, E.; Ishii, K.; Hayashi, Y.; Hiraishi, H.

    1983-02-01

    Theoretical and experimental investigations to obtain lower voltage Electrically Erasable and Programmable ROM's (EEPROM's) than conventional devices have been performed. The scaled-down Metal-Oxide-Nitride-Oxide semiconductor (MONOS) structure is proposed to realize an extremely low-voltage programmable device. The proposed scaled down MONOS devices enjoy several advantages over MNOS devices, e.g., enlargement of the memory window, elimination of degradation phenomena, and drastic improvement in device yield. Low voltage operation with + or - 6-V supplies is demonstrated by the fabricated scaled down MONOS transistors.

  15. Semiconductor-to-metal transition in the bulk of WSe2 upon potassium intercalation

    NASA Astrophysics Data System (ADS)

    Ahmad, Mushtaq; Müller, Eric; Habenicht, Carsten; Schuster, Roman; Knupfer, Martin; Büchner, Bernd

    2017-04-01

    We present electron energy-loss spectroscopic measurements of potassium (K) intercalated tungsten diselenide (WSe2). After exposure of pristine WSe2 films to potassium, we observe a charge carrier plasmon excitation at about 0.97 eV, which indicates a semiconductor-to-metal transition. Our data reveal the formation of one particular doped K-WSe2 phase. A Kramers–Kronig analysis allows the determination of the dielectric function and the estimation of the composition of K0.6WSe2. Momentum dependent measurements reveal a substantial plasmon dispersion to higher energies.

  16. Positron annihilation studies in the field induced depletion regions of metal-oxide-semiconductor structures

    SciTech Connect

    Asoka-Kumar, P.; Leung, T.C.; Lynn, K.G.; Nielsen, B.; Forcier, M.P. ); Weinberg, Z.A.; Rubloff, G.W. )

    1992-06-01

    The centroid shifts of positron annihilation spectra are reported from the depletion regions of metal-oxide-semiconductor (MOS) capacitors at room temperature and at 35 K. The centroid shift measurement can be explained using the variation of the electric field strength and depletion layer thickness as a function of the applied gate bias. An estimate for the relevant MOS quantities is obtained by fitting the centroid shift versus beam energy data with a steady-state diffusion-annihilation equation and a derivative-gaussian positron implantation profile. Inadequacy of the present analysis scheme is evident from the derived quantities and alternate methods are required for better predictions.

  17. Semiconductor-to-metal transition in the bulk of WSe2 upon potassium intercalation.

    PubMed

    Ahmad, Mushtaq; Müller, Eric; Habenicht, Carsten; Schuster, Roman; Knupfer, Martin; Büchner, Bernd

    2017-04-26

    We present electron energy-loss spectroscopic measurements of potassium (K) intercalated tungsten diselenide (WSe2). After exposure of pristine WSe2 films to potassium, we observe a charge carrier plasmon excitation at about 0.97 eV, which indicates a semiconductor-to-metal transition. Our data reveal the formation of one particular doped K-WSe2 phase. A Kramers-Kronig analysis allows the determination of the dielectric function and the estimation of the composition of K0.6WSe2. Momentum dependent measurements reveal a substantial plasmon dispersion to higher energies.

  18. Exciton-plasmon and spin-plasmon interactions in hybrid semiconductor-metal nanostructures

    NASA Astrophysics Data System (ADS)

    Govorov, Alexander

    2011-03-01

    Coulomb and electromagnetic interactions between excitons and plasmons in nanocrystals cause several effects: energy transfer between nanoparticles, plasmon enhancement, Lamb shifts of exciton lines, Fano interference. In a complex composed of semiconductor quantum dot and metal nanoparticle, plasmons interact with spin-polarized excitons. This interaction leads to the formation of coupled spin-plasmon excitations and to spin-dependent Fano resonances. If an exciton-plasmon system includes chiral elements (chiral molecules or nanocrystals), the exciton-plasmon interaction is able to create new plasmonic lines in circular dichroism spectra.

  19. Ultrasensitive mass sensor fully integrated with complementary metal-oxide-semiconductor circuitry

    NASA Astrophysics Data System (ADS)

    Forsen, E.; Abadal, G.; Ghatnekar-Nilsson, S.; Teva, J.; Verd, J.; Sandberg, R.; Svendsen, W.; Perez-Murano, F.; Esteve, J.; Figueras, E.; Campabadal, F.; Montelius, L.; Barniol, N.; Boisen, A.

    2005-07-01

    Nanomechanical resonators have been monolithically integrated on preprocessed complementary metal-oxide-semiconductor (CMOS) chips. Fabricated resonator systems have been designed to have resonance frequencies up to 1.5 MHz. The systems have been characterized in ambient air and vacuum conditions and display ultrasensitive mass detection in air. A mass sensitivity of 4ag/Hz has been determined in air by placing a single glycerine drop, having a measured weight of 57 fg, at the apex of a cantilever and subsequently measuring a frequency shift of 14.8 kHz. CMOS integration enables electrostatic excitation, capacitive detection, and amplification of the resonance signal directly on the chip.

  20. Semiconductor-to-metal phase transition in monolayer ZrS2: GGA+U study

    NASA Astrophysics Data System (ADS)

    Kumar, Ashok; He, Haiying; Pandey, Ravindra; Ahluwalia, P. K.; Tankeshwar, K.

    2015-06-01

    We report structural and electronic properties of ZrS2 monolayer within density functional theory (DFT) by inclusion of Hubbard on-site Coulomb and exchange interactions. The importance of on-site interactions for both ZrS2 bulk and monolayer has been highlighted that significantly improves the electronic band-gap. It is demonstrated that mechanical strain induces structural phase transition that results in semiconductor-to-metal transition in monolayer ZrS2. This phenomenon has important implications in technological applications such as flexible, low power and transparent electronic devices.

  1. Effects of interdigitated platinum finger geometry on spectral response characteristics of germanium metal-semiconductor-metal photodetectors.

    PubMed

    Yang, Hyun-Duk; Janardhanam, V; Shim, Kyu-Hwan; Choi, Chel-Jong

    2014-10-01

    We fabricated interdigitated germanium (Ge) metal-semiconductor-metal photodetectors (MSM PDs) with interdigitated platinum (Pt) finger electrodes and investigated the effects of Pt finger width and spacing on their spectral response. An increase in the incident optical power enhances the creation of electron-hole pairs, resulting in a significant increase in photo current. Lowering of the Schottky barrier could be a main cause of the increase in both photo and dark current with increasing applied bias. The manufactured Ge MSM PDs exhibited a considerable spectral response for wavelengths in the range of 1.53-1.56 μm, corresponding to the entire C-band spectrum range. A reduction in the area fraction of the Pt finger electrode in the active region by decreasing and increasing finger width and spacing, respectively, led to an increase in illuminated active area and suppression of dark current, which was responsible for the improvement in responsivity and quantum efficiency of Ge MSM PDs.

  2. Theoretical Study of the Effect of an AlGaAs Double Heterostructure on Metal-Semiconductor-Metal Photodetector Performance

    NASA Technical Reports Server (NTRS)

    Salem, Ali F.; Smith, Arlynn W.; Brennan, Kevin F.

    1994-01-01

    The impulse and square-wave input response of different GaAs metal-semiconductor-metal photodetector (MSM) designs are theoretically examined using a two dimensional drift- diffusion numerical calculation with a thermionic-field emission boundary condition model for the heterojunctions. The rise time and the fall time of the output signal current are calculated for a simple GaAs, epitaxially grown, MSM device as well as for various double-heterostructure barrier devices. The double heterostructure devices consist of an AlGaAs layer sandwiched between the top GaAs active, absorption layer and the bottom GaAs substrate. The effect of the depth of the AlGaAs layer on the speed and responsivity of the MSM devices is examined. It is found that there is an optimal depth, at fixed applied bias, of the AlGaAs layer within the structure that provides maximum responsivity at minimal compromise in speed.

  3. Direct observation of both contact and remote oxygen scavenging of GeO{sub 2} in a metal-oxide-semiconductor stack

    SciTech Connect

    Fadida, S. Shekhter, P.; Eizenberg, M.; Cvetko, D.; Floreano, L.; Verdini, A.; Kymissis, I.

    2014-10-28

    In the path to incorporating Ge based metal-oxide-semiconductor into modern nano-electronics, one of the main issues is the oxide-semiconductor interface quality. Here, the reactivity of Ti on Ge stacks and the scavenging effect of Ti were studied using synchrotron X-ray photoelectron spectroscopy measurements, with an in-situ metal deposition and high resolution transmission electron microscopy imaging. Oxygen removal from the Ge surface was observed both in direct contact as well as remotely through an Al{sub 2}O{sub 3} layer. The scavenging effect was studied in situ at room temperature and after annealing. We find that the reactivity of Ti can be utilized for improved scaling of Ge based devices.

  4. High-efficiency photovoltaics based on semiconductor nanostructures

    SciTech Connect

    Yu, Paul K.L.; Yu, Edward T.; Wang, Deli

    2011-10-31

    The objective of this project was to exploit a variety of semiconductor nanostructures, specifically semiconductor quantum wells, quantum dots, and nanowires, to achieve high power conversion efficiency in photovoltaic devices. In a thin-film device geometry, the objectives were to design, fabricate, and characterize quantum-well and quantum-dot solar cells in which scattering from metallic and/or dielectric nanostructures was employed to direct incident photons into lateral, optically confined paths within a thin (~1-3um or less) device structure. Fundamental issues concerning nonequilibrium carrier escape from quantum-confined structures, removal of thin-film devices from an epitaxial growth substrate, and coherent light trapping in thin-film photovoltaic devices were investigated. In a nanowire device geometry, the initial objectives were to engineer vertical nanowire arrays to optimize optical confinement within the nanowires, and to extend this approach to core-shell heterostructures to achieve broadspectrum absorption while maintaining high opencircuit voltages. Subsequent work extended this approach to include fabrication of nanowire photovoltaic structures on low-cost substrates.

  5. Neutron hardness of silicon-based semiconductor devices

    SciTech Connect

    Baratta, A.J.; Kenney, E.S.

    1988-01-01

    The effects of radiation on silicon-based semiconductor devices have been the subject of research for many years. In an effort to understand these effects, a series of experiments was conducted on gamma-hardened MOSFETs. Experiments concentrated on MOSFETs in rad-hard form and on off-the-shelf items. Because of the need to maintain bias voltages at set levels to enhance damage and because of concerns over possible rapid annealing, active testing during irradiation was performed. In general, MOSFETs are expected to perform well in fast neutron environments. With the advances in rad-hard technologies, exposures to several-megarad gamma rays can be tolerated. In nuclear systems, the normal concurrent neutron fluence can reach over 10{sup 16} n/cm{sup 2}. At these levels, current research indicates that the devices fail. Such failure is not altogether unexpected, although the degree of induced structural disorder in the semiconductor's crystalline makeup is still small. However, the damage done appears to carry the silicon back to a nearly intrinsic state. Knowing that each primary knock-on atom causes 10 to 6000 secondary atomic dislocations, the fluences of 10{sup 16}/cm{sup 2} are clearly at a level able to markedly change semiconductor dopant-induced behavior. Thus, one can conclude that for current devices, the gamma dose in a mixed neutron gamma field may no longer be limiting.

  6. Semiconductor-based superlens for subwavelength resolution below the diffraction limit at extreme ultraviolet frequencies

    NASA Astrophysics Data System (ADS)

    Vincenti, M. A.; D'Orazio, A.; Cappeddu, M. G.; Akozbek, Neset; Bloemer, M. J.; Scalora, M.

    2009-05-01

    We theoretically demonstrate negative refraction and subwavelength resolution below the diffraction limit in the UV and extreme UV ranges using semiconductors. The metal-like response of typical semiconductors such as GaAs or GaP makes it possible to achieve negative refraction and superguiding in resonant semiconductor/dielectric multilayer stacks, similar to what has been demonstrated in metallodielectric photonic band gap structures. The exploitation of this basic property in semiconductors raises the possibility of yet-untapped applications in the UV and soft x-ray ranges.

  7. A simple method of interface-state reduction in metal-nitride-oxide-semiconductor structures

    NASA Astrophysics Data System (ADS)

    Sheu, Yea-Dean

    1991-04-01

    A method for reducing the interface-state density in polysilicon gate metal-nitride-oxide-semiconductor (MNOS) capacitors is reported. The method involves deposition of a sacrificial blanket aluminum layer on top of a chemical-vapor-deposition (CVD) oxide over MNOS capacitors. The entire stack was then annealed at 450 °C in nitrogen and then the metal and CVD oxide were stripped away. The interface state density was reduced from 1011 to 1010 cm-2 eV-1 after this anneal. It is believed that Al reacts with trace water in the CVD oxide and generates active hydrogen. The hydrogen diffuses to the Si/SiO2 interface and passivates the interface states.

  8. Effective optical Faraday rotations of semiconductor EuS nanocrystals with paramagnetic transition-metal ions.

    PubMed

    Hasegawa, Yasuchika; Maeda, Masashi; Nakanishi, Takayuki; Doi, Yoshihiro; Hinatsu, Yukio; Fujita, Koji; Tanaka, Katsuhisa; Koizumi, Hitoshi; Fushimi, Koji

    2013-02-20

    Novel EuS nanocrystals containing paramagnetic Mn(II), Co(II), or Fe(II) ions have been reported as advanced semiconductor materials with effective optical rotation under a magnetic field, Faraday rotation. EuS nanocrystals with transition-metal ions, EuS:M nanocrystals, were prepared by the reduction of the Eu(III) dithiocarbamate complex tetraphenylphosphonium tetrakis(diethyldithiocarbamate)europium(III) with transition-metal complexes at 300 °C. The EuS:M nanocrystals thus prepared were characterized using X-ray diffraction (XRD), transmission electron microscopy (TEM), inductively coupled plasma atomic emission spectroanalysis (ICP-AES), and a superconducting quantum interference device (SQUID) magnetometer. Enhanced Faraday rotations of the EuS:M nanocrystals were observed around 550 nm, and their enhanced spin polarization was estimated using electron paramagnetic resonance (EPR) measurements. In this report, the magneto-optical relationship between the Faraday rotation efficiency and spin polarization is discussed.

  9. Application of the exact exchange potential method for half metallic intermediate band alloy semiconductor.

    PubMed

    Fernández, J J; Tablero, C; Wahnón, P

    2004-06-08

    In this paper we present an analysis of the convergence of the band structure properties, particularly the influence on the modification of the bandgap and bandwidth values in half metallic compounds by the use of the exact exchange formalism. This formalism for general solids has been implemented using a localized basis set of numerical functions to represent the exchange density. The implementation has been carried out using a code which uses a linear combination of confined numerical pseudoatomic functions to represent the Kohn-Sham orbitals. The application of this exact exchange scheme to a half-metallic semiconductor compound, in particular to Ga(4)P(3)Ti, a promising material in the field of high efficiency solar cells, confirms the existence of the isolated intermediate band in this compound.

  10. Implementation of Surface Acoustic Wave Vapor Sensor Using Complementary Metal-Oxide-Semiconductor Amplifiers

    NASA Astrophysics Data System (ADS)

    Chiu, Chia-Sung; Chang, Ching-Chun; Ku, Chia-Lin; Peng, Kang-Ming; Jeng, Erik S.; Chen, Wen-Lin; Huang, Guo-Wei; Wu, Lin-Kun

    2009-04-01

    A surface acoustic wave (SAW) vapor sensor is presented in this work. A SAW delay line oscillator on quartz substrate with the high gain complementary metal-oxide-semiconductor (CMOS) amplifier using a two-poly-two-metal (2P2M) 0.35 µm process was designed. The gain of the CMOS amplifier and its total power consumption are 20 dB and 70 mW, respectively. The achieved phase noise of this SAW oscillator is -150 dBc/Hz at 100 kHz offset. The sensing is successfully demonstrated by a thin poly(epichlorohydrin) (PECH) polymer film on a SAW oscillator with alcohol vapor. This two-in-one sensor unit includes the SAW device and the CMOS amplifier provides designers with comprehensive model for using these components for sensor circuit fabrication. Furthermore it will be promising for future chemical and biological sensing applications.

  11. Photoelectrochemical water splitting enhanced by self-assembled metal nanopillars embedded in an oxide semiconductor photoelectrode

    PubMed Central

    Kawasaki, Seiji; Takahashi, Ryota; Yamamoto, Takahisa; Kobayashi, Masaki; Kumigashira, Hiroshi; Yoshinobu, Jun; Komori, Fumio; Kudo, Akihiko; Lippmaa, Mikk

    2016-01-01

    Production of chemical fuels by direct solar energy conversion in a photoelectrochemical cell is of great practical interest for developing a sustainable energy system. Various nanoscale designs such as nanowires, nanotubes, heterostructures and nanocomposites have been explored to increase the energy conversion efficiency of photoelectrochemical water splitting. Here we demonstrate a self-organized nanocomposite material concept for enhancing the efficiency of photocarrier separation and electrochemical energy conversion. Mechanically robust photoelectrodes are formed by embedding self-assembled metal nanopillars in a semiconductor thin film, forming tubular Schottky junctions around each pillar. The photocarrier transport efficiency is strongly enhanced in the Schottky space charge regions while the pillars provide an efficient charge extraction path. Ir-doped SrTiO3 with embedded iridium metal nanopillars shows good operational stability in a water oxidation reaction and achieves over 80% utilization of photogenerated carriers under visible light in the 400- to 600-nm wavelength range. PMID:27255209

  12. Controlling the metal to semiconductor transition of MoS2 and WS2 in solution

    DOE PAGES

    Chou, Stanley Shihyao; Yi-Kai Huang; Kim, Jaemyung; ...

    2015-01-22

    Lithiation-exfoliation produces single to few-layered MoS2 and WS2 sheets dispersible in water. However, the process transforms them from the pristine semiconducting 2H phase to a distorted metallic phase. Recovery of the semiconducting properties typically involves heating of the chemically exfoliated sheets at elevated temperatures. Therefore, it has been largely limited to sheets deposited on solid substrates. We report the dispersion of chemically exfoliated MoS2 sheets in high boiling point organic solvents enabled by surface functionalization and the controllable recovery of their semiconducting properties directly in solution. Ultimately, this process connects the scalability of chemical exfoliation with the simplicity of solutionmore » processing, enabling a facile method for tuning the metal to semiconductor transitions of MoS2 and WS2 within a liquid medium.« less

  13. Photoelectrochemical water splitting enhanced by self-assembled metal nanopillars embedded in an oxide semiconductor photoelectrode

    NASA Astrophysics Data System (ADS)

    Kawasaki, Seiji; Takahashi, Ryota; Yamamoto, Takahisa; Kobayashi, Masaki; Kumigashira, Hiroshi; Yoshinobu, Jun; Komori, Fumio; Kudo, Akihiko; Lippmaa, Mikk

    2016-06-01

    Production of chemical fuels by direct solar energy conversion in a photoelectrochemical cell is of great practical interest for developing a sustainable energy system. Various nanoscale designs such as nanowires, nanotubes, heterostructures and nanocomposites have been explored to increase the energy conversion efficiency of photoelectrochemical water splitting. Here we demonstrate a self-organized nanocomposite material concept for enhancing the efficiency of photocarrier separation and electrochemical energy conversion. Mechanically robust photoelectrodes are formed by embedding self-assembled metal nanopillars in a semiconductor thin film, forming tubular Schottky junctions around each pillar. The photocarrier transport efficiency is strongly enhanced in the Schottky space charge regions while the pillars provide an efficient charge extraction path. Ir-doped SrTiO3 with embedded iridium metal nanopillars shows good operational stability in a water oxidation reaction and achieves over 80% utilization of photogenerated carriers under visible light in the 400- to 600-nm wavelength range.

  14. Controlling the metal to semiconductor transition of MoS2 and WS2 in solution.

    PubMed

    Chou, Stanley S; Huang, Yi-Kai; Kim, Jaemyung; Kaehr, Bryan; Foley, Brian M; Lu, Ping; Dykstra, Conner; Hopkins, Patrick E; Brinker, C Jeffrey; Huang, Jiaxing; Dravid, Vinayak P

    2015-02-11

    Lithiation-exfoliation produces single to few-layered MoS2 and WS2 sheets dispersible in water. However, the process transforms them from the pristine semiconducting 2H phase to a distorted metallic phase. Recovery of the semiconducting properties typically involves heating of the chemically exfoliated sheets at elevated temperatures. Therefore, it has been largely limited to sheets deposited on solid substrates. Here, we report the dispersion of chemically exfoliated MoS2 sheets in high boiling point organic solvents enabled by surface functionalization and the controllable recovery of their semiconducting properties directly in solution. This process connects the scalability of chemical exfoliation with the simplicity of solution processing, ultimately enabling a facile method for tuning the metal to semiconductor transitions of MoS2 and WS2 within a liquid medium.

  15. Reducing contact resistance at semiconductor to metal or aluminum to metal interfaces

    NASA Technical Reports Server (NTRS)

    Keller, K. R.

    1969-01-01

    Etchant containing chloroplatinous or chloroplatinic acid greatly reduces contact resistance between metallic surfaces. Etching results in a monolayer plating of platinum on the wafer surface, preventing oxide growth.

  16. Modelling for Transient Optically Induced Metal - Transitions in Narrow-Gap Semiconductors and Semimetals.

    NASA Astrophysics Data System (ADS)

    Vidal, Jordina

    1994-01-01

    The theoretical work presented in this thesis is based on models developed to interpret a series of optical experiments with short-pulse lasers, which allow a time -domain study of phenomena on a sub-picosecond timescale. By means of a pump-probe technique, we observe large amplitude oscillations in the time domain reflectivity response of a series of narrow-gap semiconductors and semimetals. The oscillations have the frequency of the fully-symmetric optical phonon mode of the system, and are maximally displaced from their midpoint value at zero time delay between pump and probe. These features indicate that a coherent phonon vibration is generated in these materials via an electronic excitation at different points of the Brillouin zone, which displaces instantaneously the equilibrium positions of the atoms. It is precisely this generation of coherent phonons that makes the time-domain technique distinct from conventional frequency domain techniques, such as Raman and neutron scattering. Using a range of theoretical techniques, from nearly free electron models to state-of-the art ab initio calculations, I have made quantitative microscopic evaluations of the coherent phonon phenomenon. The studies focus on two unique aspects of having such coherent atomic vibrations in a narrow gap material, with special emphasis on the group V semimetals Sb and Bi. First of all, I have performed dynamical band structure calculations, as a function of the coherent atomic motion, in order to inspect the possibility of a transient metal-insulator transition at a terahertz frequency. Secondly, I have calculated the evolution of the displaced atoms in quasi-equilibrium with the laser -excited carriers, as the electron-ion coupled system returns to its ground state equilibrium. These calculations are fundamental, insofar they provide a quantitative microscopic description of the coherent phonon phenomenon. Moreover, the predicted magnitude of the atomic displacements, and the resulting

  17. Photoemission, vibrational and stimulated desorption studies of metal-semiconductor interfaces and of chemisorbed atoms and molecules

    NASA Astrophysics Data System (ADS)

    Margaritondo, G.

    1984-10-01

    This program has produced in recent years a number of fundamental results on the microscopic properties of metal-semiconductor interfaces and on the mechanism of photon stimulated desorption. Both areas of research are of fundamental interest in condensed matter physics. Furthermore they have important applications in technology. The microscopic metal-semiconductor interface properties are directly related to the behavior and performance of the Schottky barrier, one of the building blocks of modern solid-state devices. This program investigates the formation of metal-semiconductor interfaces with some of the most powerful surface-science experimental probes: photoemission spectroscopy with synchrotron radiation, Auger spectroscopy, low-energy electron defraction in high-resolution electron energy loss surface vibrational spectroscopy. The stimulated desorption process is potentially a good probe of the chemical properties of absorbed species, e.g., in catalytic systems.

  18. Synergizing the multiple plasmon resonance coupling and quantum effects to obtain enhanced SERS and PEC performance simultaneously on a noble metal-semiconductor substrate.

    PubMed

    Yang, Tao; Liu, Wenna; Li, Lidong; Chen, Junhong; Hou, Xinmei; Chou, Kuo-Chih

    2017-02-09

    Aiming to achieve the synergistic enhancement of the surface-enhanced Raman scattering (SERS) and photoelectrocatalytic (PEC) performance on a noble metal-semiconductor, such as Au nanoparticles (NPs)-TiO2 nanotube arrays (TiO2 NTAs@hybrid Au NPs), theoretical calculation and experiments are performed. Theoretical calculation indicates that both the SERS and PEC performance can be enhanced by coupling different sized Au NPs on TiO2 NTAs based on synergizing the multiple plasmon resonance coupling and quantum effects. To further verify this mechanism, TiO2 NTAs@hybrid Au NPs are assembled via synthesis of TiO2 NTAs through the anodic oxidation process, followed by the deposition of different sized Au NPs onto the TiO2 surface simultaneously using physical vapor deposition (PVD) in this work. Such substrates exhibit excellent detection sensitivity towards organic dyes including Rhodamine B (RhB), the organic herbicide dichlorophenoxyacetic acid (2,4-D) and the organophosphate pesticide methyl-parathion (MP) with high reproducibility, stability and reusability. Meanwhile the PEC performance based on this substrate remains efficient compared with the reported results in the literature. The efficient PEC performance mainly originates from both the quantum effect of Au nanoparticles and the formation of a metal-semiconductor heterojunction. It is proposed that other noble metal-semiconductor complex nanomaterials can also obtain both enhanced SERS and PEC performance based on the above mechanism.

  19. Plasmon‐Mediated Solar Energy Conversion via Photocatalysis in Noble Metal/Semiconductor Composites

    PubMed Central

    Wang, Mengye; Ye, Meidan; Iocozzia, James

    2016-01-01

    Plasmonics has remained a prominent and growing field over the past several decades. The coupling of various chemical and photo phenomenon has sparked considerable interest in plasmon‐mediated photocatalysis. Given plasmonic photocatalysis has only been developed for a relatively short period, considerable progress has been made in improving the absorption across the full solar spectrum and the efficiency of photo‐generated charge carrier separation. With recent advances in fundamental (i.e., mechanisms) and experimental studies (i.e., the influence of size, geometry, surrounding dielectric field, etc.) on plasmon‐mediated photocatalysis, the rational design and synthesis of metal/semiconductor hybrid nanostructure photocatalysts has been realized. This review seeks to highlight the recent impressive developments in plasmon‐mediated photocatalytic mechanisms (i.e., Schottky junction, direct electron transfer, enhanced local electric field, plasmon resonant energy transfer, and scattering and heating effects), summarize a set of factors (i.e., size, geometry, dielectric environment, loading amount and composition of plasmonic metal, and nanostructure and properties of semiconductors) that largely affect plasmonic photocatalysis, and finally conclude with a perspective on future directions within this rich field of research. PMID:27818901

  20. Plasmon-Mediated Solar Energy Conversion via Photocatalysis in Noble Metal/Semiconductor Composites.

    PubMed

    Wang, Mengye; Ye, Meidan; Iocozzia, James; Lin, Changjian; Lin, Zhiqun

    2016-06-01

    Plasmonics has remained a prominent and growing field over the past several decades. The coupling of various chemical and photo phenomenon has sparked considerable interest in plasmon-mediated photocatalysis. Given plasmonic photocatalysis has only been developed for a relatively short period, considerable progress has been made in improving the absorption across the full solar spectrum and the efficiency of photo-generated charge carrier separation. With recent advances in fundamental (i.e., mechanisms) and experimental studies (i.e., the influence of size, geometry, surrounding dielectric field, etc.) on plasmon-mediated photocatalysis, the rational design and synthesis of metal/semiconductor hybrid nanostructure photocatalysts has been realized. This review seeks to highlight the recent impressive developments in plasmon-mediated photocatalytic mechanisms (i.e., Schottky junction, direct electron transfer, enhanced local electric field, plasmon resonant energy transfer, and scattering and heating effects), summarize a set of factors (i.e., size, geometry, dielectric environment, loading amount and composition of plasmonic metal, and nanostructure and properties of semiconductors) that largely affect plasmonic photocatalysis, and finally conclude with a perspective on future directions within this rich field of research.

  1. Fabrication of smooth patterned structures of refractory metals, semiconductors, and oxides via template stripping.

    PubMed

    Park, Jong Hyuk; Nagpal, Prashant; McPeak, Kevin M; Lindquist, Nathan C; Oh, Sang-Hyun; Norris, David J

    2013-10-09

    The template-stripping method can yield smooth patterned films without surface contamination. However, the process is typically limited to coinage metals such as silver and gold because other materials cannot be readily stripped from silicon templates due to strong adhesion. Herein, we report a more general template-stripping method that is applicable to a larger variety of materials, including refractory metals, semiconductors, and oxides. To address the adhesion issue, we introduce a thin gold layer between the template and the deposited materials. After peeling off the combined film from the template, the gold layer can be selectively removed via wet etching to reveal a smooth patterned structure of the desired material. Further, we demonstrate template-stripped multilayer structures that have potential applications for photovoltaics and solar absorbers. An entire patterned device, which can include a transparent conductor, semiconductor absorber, and back contact, can be fabricated. Since our approach can also produce many copies of the patterned structure with high fidelity by reusing the template, a low-cost and high-throughput process in micro- and nanofabrication is provided that is useful for electronics, plasmonics, and nanophotonics.

  2. Fabrication of Smooth Patterned Structures of Refractory Metals, Semiconductors, and Oxides via Template Stripping

    PubMed Central

    2013-01-01

    The template-stripping method can yield smooth patterned films without surface contamination. However, the process is typically limited to coinage metals such as silver and gold because other materials cannot be readily stripped from silicon templates due to strong adhesion. Herein, we report a more general template-stripping method that is applicable to a larger variety of materials, including refractory metals, semiconductors, and oxides. To address the adhesion issue, we introduce a thin gold layer between the template and the deposited materials. After peeling off the combined film from the template, the gold layer can be selectively removed via wet etching to reveal a smooth patterned structure of the desired material. Further, we demonstrate template-stripped multilayer structures that have potential applications for photovoltaics and solar absorbers. An entire patterned device, which can include a transparent conductor, semiconductor absorber, and back contact, can be fabricated. Since our approach can also produce many copies of the patterned structure with high fidelity by reusing the template, a low-cost and high-throughput process in micro- and nanofabrication is provided that is useful for electronics, plasmonics, and nanophotonics. PMID:24001174

  3. Fabrication of a metal-oxide-semiconductor-type capacitive microtip array using SiO2 or HfO2 gate insulators

    NASA Astrophysics Data System (ADS)

    Kim, Kyung-Min; Choi, Byung Joon; Kim, Seong Keun; Hwang, Cheol Seong

    2004-11-01

    Capacitive tip arrays having a metal-insulator-semiconductor capacitor structure were fabricated using thermally oxidized SiO2 or atomic-layer-deposited HfO2 gate dielectric films for their application to scanning-probe-array-type memory devices. The SiO2 film showed a nonuniform thickness distribution over the flat and tip areas of the arrays owing to the different oxidation speeds of the flat and tip Si surfaces. This resulted in a smaller sensing margin of the device. However, the high-dielectric HfO2 film showed not only a higher capacitance value but also a more uniform growth behavior over the whole area, which would result in a better device performance. The capacitance-voltage characteristics of both devices coincide well with the simulation results based on conventional metal-insulator-semiconductor theories.

  4. Influence of extrinsic factors on accuracy of mobility extraction in graphene metal-oxide-semiconductor field effect transistors

    NASA Astrophysics Data System (ADS)

    Gon Lee, Young; Ji Kim, Yun; Goo Kang, Chang; Cho, Chunhum; Lee, Sangchul; Jun Hwang, Hyeon; Jung, Ukjin; Hun Lee, Byoung

    2013-03-01

    Graphene has attracted attention because of its extraordinarily high mobility. However, procedures to extract mobility from graphene metal-oxide semiconductor transistors have not been systematically established because the accuracy of mobility value is affected by many extrinsic parameters. In this work, the influence of extrinsic parameters, such as contact resistance, transient charging effect, measurement temperature, and ambient on mobility are examined in order to provide a protocol capable of accurately assessing the mobility of graphene metal-oxide-semiconductor field effect transistors. Using a well controlled test protocol, the mobility of graphene is found to be temperature independent up to 450 K.

  5. Schottky or Ohmic metal-semiconductor contact: influence on photocatalytic efficiency of Ag/ZnO and Pt/ZnO model systems.

    PubMed

    Yan, Fengpo; Wang, Yonghao; Zhang, Jiye; Lin, Zhang; Zheng, Jinsheng; Huang, Feng

    2014-01-01

    The relationship between the contact type in metal-semiconductor junctions and their photocatalytic efficiencies is investigated. Two metal-semiconductor junctions, silver on zinc oxide (Ag/ZnO) and platinum on zinc oxide (Pt/ZnO) serve as model system for Ohmic and Schottky metal-semiconductor contact, respectively. Ag/ZnO, with Ohmic contact, exhibits a higher photocatalytic efficiency than Pt/ZnO, with Schottky contact. The direction of electric fields within the semiconductor is found to play a crucial role in the separation of photogenerated charges, and thus strongly influences the photocatalytic efficiency.

  6. Antimonide-Based Compound Semiconductors for Low-Power Electronics

    DTIC Science & Technology

    2013-01-01

    bipolar transistors [3], heterostructure barrier varactors for use as frequency multipliers [4], and p-n diodes for THz mixer applications [5...In0.69Al0.31As0.41Sb0.59/In0.27Ga0.73Sb double-heterojunction bipolar transistors with InAs0.66Sb0.34 contact layers. Electron Lett. 2010;46: 1333-5. [4] Champlain JG...Quantum wells formed from antimonide-based compound semiconductors are exploited in n-channel field-effect transistors (FETs) operating at high speeds

  7. Graphene-based hybrid structures combined with functional materials of ferroelectrics and semiconductors

    NASA Astrophysics Data System (ADS)

    Jie, Wenjing; Hao, Jianhua

    2014-05-01

    Fundamental studies and applications of 2-dimensional (2D) graphene may be deepened and broadened via combining graphene sheets with various functional materials, which have been extended from the traditional insulator of SiO2 to a versatile range of dielectrics, semiconductors and metals, as well as organic compounds. Among them, ferroelectric materials have received much attention due to their unique ferroelectric polarization. As a result, many attractive characteristics can be shown in graphene/ferroelectric hybrid systems. On the other hand, graphene can be integrated with conventional semiconductors and some newly-discovered 2D layered materials to form distinct Schottky junctions, yielding fascinating behaviours and exhibiting the potential for various applications in future functional devices. This review article is an attempt to illustrate the most recent progress in the fabrication, operation principle, characterization, and promising applications of graphene-based hybrid structures combined with various functional materials, ranging from ferroelectrics to semiconductors. We focus on mechanically exfoliated and chemical-vapor-deposited graphene sheets integrated in numerous advanced devices. Some typical hybrid structures have been highlighted, aiming at potential applications in non-volatile memories, transparent flexible electrodes, solar cells, photodetectors, and so on.

  8. Germanium Metal - Insulator - Semiconductor Field Effect Transistors Utilizing a Germanium Nitride Gate Insulator.

    NASA Astrophysics Data System (ADS)

    Rosenberg, James Jordan

    The work presented in this thesis provides new information on three distinct but related topics. Firstly, it describes a technique for growing thin films of germanium nitride on germanium--a previously unexplored semiconductor -insulator system. Secondly, it describes electrical measurements made on metal-Ge(,3)N(,4)-Ge capacitors which demonstrate that this metal-insulator-semiconductor (MIS) system is of high quality. Thirdly, it describes a process by which n-channel germanium metal-insulator-semiconductor field effect transistors (MISFETs) have been fabricated. The motivations for exploring this new MIS system (e.g. basic physics of germanium inversion layers, higher performance MISFETs, etc.) are also described. The growth technique described here and the films produced by it possess several distinct advantages over previous methods of obtaining insulating films on germanium. The growth technique itself is simple. It involves no elaborate or expensive equipment, and is essentially identical in its execution (although not in its chemical process) to conventional techniques for obtaining an insulator on silicon (i.e. thermal oxidation of silicon). The film growth technique yields very reproducible results (in terms of film thickness and refractive index) from wafer to wafer. The physical properties of the film itself are also attractive. It is far more chemically stable than germanium oxide, and is quite process compatible. It is resistant to many chemicals encountered in typical processing cycles, but also can be readily patterned in hot phosphoric acid, which does not appreciably attack germanium. Electrical measurements on MIS capacitors indicate that the density of fast states at the germanium-germanium nitride interface is quite low. The interface state density is less than or equal to 1 x 10('11)/cm('2)-eV from midgap to within 0.15 eV of the conduction band edge, as determined by variable frequency capacitance measurements. The MISFETs fabricated for this

  9. Study of magnetism in dilute magnetic semiconductors based on III-V nitrides

    NASA Astrophysics Data System (ADS)

    Rajaram, Rekha

    Spin based electronics, commonly referred to as "spintronics", seeks to expand the functionalities of microelectronic devices by introducing the ability to manipulate the carrier's spin, in addition to or instead of its charge. Key steps in spintronic devices include the injection, manipulation and detection of the carrier's spin. Metal-based spintronic devices such as spin valves have already found applications in high capacity hard disk drive read heads and have potential in non-volatile solid state memories. However, in order to realize the full potential of spintronics, spin manipulation must be introduced into semiconductor devices. This in turn, requires the development of magnetic semiconductors. Dilute magnetic semiconductors (DMS) are a class of magnetic semiconductors in which a fraction of the cations are substitutionally replaced by magnetic ions. The exchange interaction between the spin of the dopant atoms and the carriers in the semiconductor host is expected to bring about global ferromagnetic order in the entire lattice in these materials. The search for novel DMS candidates has been driven by two cardinal requirements - a material system with well-developed growth technology, and a high Curie temperature. In this work, we have investigated the growth and characteristics of one such promising candidate, transition-metal doped InN. InN films were deposited on c-sapphire substrates by molecular beam epitaxy, employing GaN underlayers to reduce the lattice mismatch between the film and substrate. The films were doped from 0.1-6% Cr with no noticeable trace of crystalline secondary phases detected by X-ray diffraction. However, Mn-doping led to segregation of manganese nitride. Hall effect measurements revealed n-type behavior in both undoped as well as Cr-doped films. A magnetic hysteresis, with a small remanence and coercivity was observed in Cr:InN up to room temperature, confirming long-range magnetic order in this material. X-ray magnetic circular

  10. A compact quantum correction model for symmetric double gate metal-oxide-semiconductor field-effect transistor

    SciTech Connect

    Cho, Edward Namkyu; Shin, Yong Hyeon; Yun, Ilgu

    2014-11-07

    A compact quantum correction model for a symmetric double gate (DG) metal-oxide-semiconductor field-effect transistor (MOSFET) is investigated. The compact quantum correction model is proposed from the concepts of the threshold voltage shift (ΔV{sub TH}{sup QM}) and the gate capacitance (C{sub g}) degradation. First of all, ΔV{sub TH}{sup QM} induced by quantum mechanical (QM) effects is modeled. The C{sub g} degradation is then modeled by introducing the inversion layer centroid. With ΔV{sub TH}{sup QM} and the C{sub g} degradation, the QM effects are implemented in previously reported classical model and a comparison between the proposed quantum correction model and numerical simulation results is presented. Based on the results, the proposed quantum correction model can be applicable to the compact model of DG MOSFET.

  11. Semiconductor-metal phase transition of vanadium dioxide nanostructures on silicon substrate: Applications for thermal control of spacecraft

    SciTech Connect

    Leahu, G. L. Li Voti, R. Larciprete, M. C. Belardini, A. Mura, F. Sibilia, C.; Bertolotti, M.; Fratoddi, I.

    2014-06-19

    We present a detailed infrared study of the semiconductor-to-metal transition (SMT) in a vanadium dioxide (VO2) film deposited on silicon wafer. The VO2 phase transition is studied in the mid-infrared (MIR) region by analyzing the transmittance and the reflectance measurements, and the calculated emissivity. The temperature behaviour of the emissivity during the SMT put into evidence the phenomenon of the anomalous absorption in VO2 which has been explained by applying the Maxwell Garnett effective medium approximation theory, together with a strong hysteresis phenomenon, both useful to design tunable thermal devices to be applied for the thermal control of spacecraft. We have also applied the photothermal radiometry in order to study the changes in the modulated emissivity induced by laser. Experimental results show how the use of these techniques represent a good tool for a quantitative measurement of the optothermal properties of vanadium dioxide based structures.

  12. High-performance GaN metal-insulator-semiconductor ultraviolet photodetectors using gallium oxide as gate layer.

    PubMed

    Lee, Ming-Lun; Mue, T S; Huang, F W; Yang, J H; Sheu, J K

    2011-06-20

    In this study, gallium nitride (GaN)-based metal-insulator-semiconductor (MIS) ultraviolet (UV) photodetectors (PDs) with a gallium oxide (GaO(x)) gate layer formed by alternating current bias-assisted photoelectrochemical oxidation of n-GaN are presented. By introducing the GaO(x) gate layer to the GaN MIS UV PDs, the leakage current is reduced and a much larger UV-to-visible rejection ratio (R(UV/vis)) of spectral responsivity is achieved. In addition, a bias-dependent spectral response results in marked increase of the R(UV/vis) with bias voltage up to ~10(5). The bias-dependent responsivity suggests the possible existence of internal gain in of the GaN MIS PDs.

  13. Characterization of Interface State in Silicon Carbide Metal Oxide Semiconductor Capacitors

    NASA Astrophysics Data System (ADS)

    Kao, Wei-Chieh

    Silicon carbide (SiC) has always been considered as an excellent material for high temperature and high power devices. Since SiC is the only compound semiconductor whose native oxide is silicon dioxide (SiO2), it puts SiC in a unique position. Although SiC metal oxide semiconductor (MOS) technology has made significant progress in recent years, there are still a number of issues to be overcome before more commercial SiC devices can enter the market. The prevailing issues surrounding SiC MOSFET devices are the low channel mobility, the low quality of the oxide layer and the high interface state density at the SiC/SiO2 interface. Consequently, there is a need for research to be performed in order to have a better understanding of the factors causing the poor SiC/SiO2 interface properties. In this work, we investigated the generation lifetime in SiC materials by using the pulsed metal oxide semiconductor (MOS) capacitor method and measured the interface state density distribution at the SiC/SiO2 interface by using the conductance measurement and the high-low frequency capacitance technique. These measurement techniques have been performed on n-type and p-type SiC MOS capacitors. In the course of our investigation, we observed fast interface states at semiconductor-dielectric interfaces in SiC MOS capacitors that underwent three different interface passivation processes, such states were detected in the nitrided samples but not observed in PSG-passivated samples. This result indicate that the lack of fast states at PSG-passivated interface is one of the main reasons for higher channel mobility in PSG MOSFETs. In addition, the effect of mobile ions in the oxide on the response time of interface states has been investigated. In the last chapter we propose additional methods of investigation that can help elucidate the origin of the particular interface states, enabling a more complete understanding of the SiC/SiO2 material system.

  14. Trace explosive sensor devices based on semiconductor nanomaterials

    NASA Astrophysics Data System (ADS)

    Wang, Danling

    This dissertation discusses an explosive sensing device based on semiconductor nanomaterials. Here, we mainly focus on two kinds of materials: titanium dioxide nanowires and silicon nanowires to detect explosive trace vapor. Herein, methods for the synthesis, fabrication, design of nanostructured sensing materials using low-cost hydrothermal process are present. In addition, the nanomaterials have been systemically tested on different explosive. The first part of dissertation is focused on the fabrication of TiO2(B) dominant nanowires and testing the response to explosives. It was found that the high porous TiO2(B) nanowires when mixed anatase TiO2, exhibit a very fast and highly sensitive response to nitro-containing explosives. The second part of dissertation has studied the basic sensing mechanism of TiO2(B) nanowire sensor to detect explosives. It shows the specific surface characteristics of TiO2 responsible for the nitro-containing explosives. This information is then used to propose a method using UV illumination to reduce the effect of water vapor on TiO2(B) nanowires. The third part discussed an explosive sensor based on silicon nanowires. We analyzed the mechanism of silicon nanowires to detect nitro-related explosive compounds. In order to further investigate the sensing mechanism of TiO2, the fourth part of dissertation studies the effect on sensor performance by using different crystal phases of TiO2, different microstructure of TiO2, surface modification of TiO2, and different kinds of nanostructured semiconductors such as ZnO nanowires, TiO2 coated ZnO nanowires, V2O5 nanowires, and CdS nanowires to detect explosives. It is found that only TiO2 related semiconductor shows good response to explosives.

  15. Exploiting the interaction between a semiconductor nanosphere and a thin metal film for nanoscale plasmonic devices.

    PubMed

    Li, H; Xu, Y; Xiang, J; Li, X F; Zhang, C Y; Tie, S L; Lan, S

    2016-12-07

    The interaction of silicon (Si) nanospheres (NSs) with a thin metal film is investigated numerically and experimentally by characterizing their forward scattering properties. A sharp resonant mode and a zero-scattering dip are found to be introduced in the forward scattering spectrum of a Si NS by putting it on a 50-nm-thick gold film. It is revealed that the sharp resonant mode arises from a new magnetic dipole induced by the electric dipole and its mirror image while the zero-scattering dip originates from the destructive interference between the new magnetic dipole and the original one together with its mirror image. A significant enhancement in both electric and magnetic fields is achieved at the contact point between the Si NS and the metal film. More interestingly, the use of a thin silver film can lead to vivid scattering light with different color indices. It is demonstrated that a small change in the surrounding environment of Si NSs results in the broadening of the resonant mode and the disappearance of the zero-scattering dip. Our findings indicate that dielectric-metal hybrid systems composed of semiconductor NSs and thin metal films act as attractive platforms on which novel nanoscale plasmonic devices can be realized.

  16. Amorphous silicon enhanced metal-insulator-semiconductor contacts for silicon solar cells

    SciTech Connect

    Bullock, J. Cuevas, A.; Yan, D.; Demaurex, B.; Hessler-Wyser, A.; De Wolf, S.

    2014-10-28

    Carrier recombination at the metal-semiconductor contacts has become a significant obstacle to the further advancement of high-efficiency diffused-junction silicon solar cells. This paper provides the proof-of-concept of a procedure to reduce contact recombination by means of enhanced metal-insulator-semiconductor (MIS) structures. Lightly diffused n{sup +} and p{sup +} surfaces are passivated with SiO{sub 2}/a-Si:H and Al{sub 2}O{sub 3}/a-Si:H stacks, respectively, before the MIS contacts are formed by a thermally activated alloying process between the a-Si:H layer and an overlying aluminum film. Transmission/scanning transmission electron microscopy (TEM/STEM) and energy dispersive x-ray spectroscopy are used to ascertain the nature of the alloy. Idealized solar cell simulations reveal that MIS(n{sup +}) contacts, with SiO{sub 2} thicknesses of ∼1.55 nm, achieve the best carrier-selectivity producing a contact resistivity ρ{sub c} of ∼3 mΩ cm{sup 2} and a recombination current density J{sub 0c} of ∼40 fA/cm{sup 2}. These characteristics are shown to be stable at temperatures up to 350 °C. The MIS(p{sup +}) contacts fail to achieve equivalent results both in terms of thermal stability and contact characteristics but may still offer advantages over directly metallized contacts in terms of manufacturing simplicity.

  17. Detection of Infrared Photons Using the Electronic Stress in Metal-Semiconductor Interfaces

    SciTech Connect

    Datskos, P.G.; Datskou, I.; Egert, C.M.; Rjic, S.

    1999-04-05

    It is well known that the work function of metals decreases when they are placed in a nonpolar liquid. A similar decrease occurs when the metal is placed into contact with a semiconductor forming a Schottky barrier. We report on a new method for detecting photons using the stress caused by photo-electrons emitted from a metal film surface in contact with a semiconductor microstructure. The photoelectrons diffuse into the microstructure and produce an electronic stress. The photon detection results from the measurement of the photo-induced bending of the microstructure. Internal photoemission has been used in the past to detect photons, however, in those cases the detection was accomplished by measuring the current due to photoelectrons and not due to electronic stress. Small changes in position (displacement) of microstructures are routinely measured in atomic force microscopy (AFM) where atomic imaging of surfaces relies on the measurement of small changes (< l0{sup -9} m) in the bending of microcantilevers. In the present work we studied the photon response of Si microcantilevers coated with a thin film of Pt. The Si microcantilevers were 500 nm thick and had a 30 nm layer of Pt. Photons with sufficient energies produce electrons from the platinum-silicon interface which diffuse into the Si and produce an electronic stress. Since the excess charge carriers cause the Si microcantilever to contract in length but not the Pt layer, the bimaterial microcantilever bends. In our present studies we used the optical detection technique to measure the photometric response of Pt-Si microcantilevers as a function of photon energy. The charge carriers responsible for the photo-induced stress in Si, were produced via internal photoemission using a diode laser with wavelength {lambda} = 1550 nm.

  18. Switching Plasmons: Gold Nanorod-Copper Chalcogenide Core-Shell Nanoparticle Clusters with Selectable Metal/Semiconductor NIR Plasmon Resonances.

    PubMed

    Muhammed, Madathumpady Abubaker Habeeb; Döblinger, Markus; Rodríguez-Fernández, Jessica

    2015-09-16

    Exerting control over the near-infrared (NIR) plasmonic response of nanosized metals and semiconductors can facilitate access to unexplored phenomena and applications. Here we combine electrostatic self-assembly and Cd(2+)/Cu(+) cation exchange to obtain an anisotropic core-shell nanoparticle cluster (NPC) whose optical properties stem from two dissimilar plasmonic materials: a gold nanorod (AuNR) core and a copper selenide (Cu(2-x)Se, x ≥ 0) supraparticle shell. The spectral response of the AuNR@Cu2Se NPCs is governed by the transverse and longitudinal plasmon bands (LPB) of the anisotropic metallic core, since the Cu2Se shell is nonplasmonic. Under aerobic conditions the shell undergoes vacancy doping (x > 0), leading to the plasmon-rich NIR spectrum of the AuNR@Cu(2-x)Se NPCs. For low vacancy doping levels the NIR optical properties of the dually plasmonic NPCs are determined by the LPBs of the semiconductor shell (along its major longitudinal axis) and of the metal core. Conversely, for high vacancy doping levels their NIR optical response is dominated by the two most intense plasmon modes from the shell: the transverse (along the shortest transversal axis) and longitudinal (along the major longitudinal axis) modes. The optical properties of the NPCs can be reversibly switched back to a purely metallic plasmonic character upon reversible conversion of AuNR@Cu(2-x)Se into AuNR@Cu2Se. Such well-defined nanosized colloidal assemblies feature the unique ability of holding an all-metallic, a metallic/semiconductor, or an all-semiconductor plasmonic response in the NIR. Therefore, they can serve as an ideal platform to evaluate the crosstalk between plasmonic metals and plasmonic semiconductors at the nanoscale. Furthermore, their versatility to display plasmon modes in the first, second, or both NIR windows is particularly advantageous for bioapplications, especially considering their strong absorbing and near-field enhancing properties.

  19. Vectorial diffusion for facile solution-processed self-assembly of insoluble semiconductors: a case study on metal phthalocyanines.

    PubMed

    Wang, Chengliang; Fang, Yaoguo; Wen, Liaoyong; Zhou, Min; Xu, Yang; Zhao, Huaping; De Cola, Luisa; Hu, Wenping; Lei, Yong

    2014-08-25

    Solution processibility is one of the most intriguing properties of organic semiconductors. However, it is difficult to find a suitable solvent and solution process for most semiconductors. For example, metal phthalocyanines (MPcs) are only soluble in non-volatile solvents, which prevent their applications from solution process. For the first time, vectorial diffusion is utilized for solution processing of MPcs. The obtained large F16CuPc and α-phase CuPc crystals and the efficient phase separation of them suggest the vectorial diffusion process is as slow as a self-assembly process, which is helpful to yield large crystals and purify the semiconductors. This method, which only uses common commercial solvents without any complex and expensive instruments and high-temperature operation, provides a facile approach for purification of organic semiconductors and growth of their crystals in large quantities.

  20. Real-space electron transfer in III-nitride metal-oxide-semiconductor-heterojunction structures

    NASA Astrophysics Data System (ADS)

    Saygi, S.; Koudymov, A.; Adivarahan, V.; Yang, J.; Simin, G.; Khan, M. Asif; Deng, J.; Gaska, R.; Shur, M. S.

    2005-07-01

    The real-space transfer effect in a SiO2/AlGaN /GaN metal-oxide-semiconductor heterostructure (MOSH) from the two-dimensional (2D) electron gas at the heterointerface to the oxide-semiconductor interface has been demonstrated and explained. The effect occurs at high positive gate bias and manifests itself as an additional step in the capacitance-voltage (C-V) characteristic. The real-space transfer effect limits the achievable maximum 2D electron gas density in the device channel. We show that in MOSH structures the maximum electron gas density exceeds up to two times that at the equilibrium (zero bias) condition. Correspondingly, a significant increase in the maximum channel current (up to two times compared to conventional Schottky-gate structures) can be achieved. The real-space charge transfer effect in MOSH structures also opens up a way to design novel devices such as variable capacitors, multistate switches, memory cells, etc.

  1. High-resolution electrohydrodynamic inkjet printing of stretchable metal oxide semiconductor transistors with high performance.

    PubMed

    Kim, S-Y; Kim, K; Hwang, Y H; Park, J; Jang, J; Nam, Y; Kang, Y; Kim, M; Park, H J; Lee, Z; Choi, J; Kim, Y; Jeong, S; Bae, B-S; Park, J-U

    2016-10-06

    As demands for high pixel densities and wearable forms of displays increase, high-resolution printing technologies to achieve high performance transistors beyond current amorphous silicon levels and to allow low-temperature solution processability for plastic substrates have been explored as key processes in emerging flexible electronics. This study describes electrohydrodynamic inkjet (e-jet) technology for direct printing of oxide semiconductor thin film transistors (TFTs) with high resolution (minimum line width: 2 μm) and superb performance, including high mobility (∼230 cm(2) V(-1) s(-1)). Logic operations of the amplifier circuits composed of these e-jet-printed metal oxide semiconductor (MOS) TFTs demonstrate their high performance. Printed In2O TFTs with e-jet printing-assisted high-resolution S/D electrodes were prepared, and the direct printing of passivation layers on these channels enhanced their gate-bias stabilities significantly. Moreover, low process temperatures (<250 °C) enable the use of thin plastic substrates; highly flexible and stretchable TFT arrays have been demonstrated, suggesting promise for next-generation printed electronics.

  2. Inversion channel diamond metal-oxide-semiconductor field-effect transistor with normally off characteristics

    NASA Astrophysics Data System (ADS)

    Matsumoto, Tsubasa; Kato, Hiromitsu; Oyama, Kazuhiro; Makino, Toshiharu; Ogura, Masahiko; Takeuchi, Daisuke; Inokuma, Takao; Tokuda, Norio; Yamasaki, Satoshi

    2016-08-01

    We fabricated inversion channel diamond metal-oxide-semiconductor field-effect transistors (MOSFETs) with normally off characteristics. At present, Si MOSFETs and insulated gate bipolar transistors (IGBTs) with inversion channels are widely used because of their high controllability of electric power and high tolerance. Although a diamond semiconductor is considered to be a material with a strong potential for application in next-generation power devices, diamond MOSFETs with an inversion channel have not yet been reported. We precisely controlled the MOS interface for diamond by wet annealing and fabricated p-channel and planar-type MOSFETs with phosphorus-doped n-type body on diamond (111) substrate. The gate oxide of Al2O3 was deposited onto the n-type diamond body by atomic layer deposition at 300 °C. The drain current was controlled by the negative gate voltage, indicating that an inversion channel with a p-type character was formed at a high-quality n-type diamond body/Al2O3 interface. The maximum drain current density and the field-effect mobility of a diamond MOSFET with a gate electrode length of 5 μm were 1.6 mA/mm and 8.0 cm2/Vs, respectively, at room temperature.

  3. Inversion channel diamond metal-oxide-semiconductor field-effect transistor with normally off characteristics.

    PubMed

    Matsumoto, Tsubasa; Kato, Hiromitsu; Oyama, Kazuhiro; Makino, Toshiharu; Ogura, Masahiko; Takeuchi, Daisuke; Inokuma, Takao; Tokuda, Norio; Yamasaki, Satoshi

    2016-08-22

    We fabricated inversion channel diamond metal-oxide-semiconductor field-effect transistors (MOSFETs) with normally off characteristics. At present, Si MOSFETs and insulated gate bipolar transistors (IGBTs) with inversion channels are widely used because of their high controllability of electric power and high tolerance. Although a diamond semiconductor is considered to be a material with a strong potential for application in next-generation power devices, diamond MOSFETs with an inversion channel have not yet been reported. We precisely controlled the MOS interface for diamond by wet annealing and fabricated p-channel and planar-type MOSFETs with phosphorus-doped n-type body on diamond (111) substrate. The gate oxide of Al2O3 was deposited onto the n-type diamond body by atomic layer deposition at 300 °C. The drain current was controlled by the negative gate voltage, indicating that an inversion channel with a p-type character was formed at a high-quality n-type diamond body/Al2O3 interface. The maximum drain current density and the field-effect mobility of a diamond MOSFET with a gate electrode length of 5 μm were 1.6 mA/mm and 8.0 cm(2)/Vs, respectively, at room temperature.

  4. Inversion channel diamond metal-oxide-semiconductor field-effect transistor with normally off characteristics

    PubMed Central

    Matsumoto, Tsubasa; Kato, Hiromitsu; Oyama, Kazuhiro; Makino, Toshiharu; Ogura, Masahiko; Takeuchi, Daisuke; Inokuma, Takao; Tokuda, Norio; Yamasaki, Satoshi

    2016-01-01

    We fabricated inversion channel diamond metal-oxide-semiconductor field-effect transistors (MOSFETs) with normally off characteristics. At present, Si MOSFETs and insulated gate bipolar transistors (IGBTs) with inversion channels are widely used because of their high controllability of electric power and high tolerance. Although a diamond semiconductor is considered to be a material with a strong potential for application in next-generation power devices, diamond MOSFETs with an inversion channel have not yet been reported. We precisely controlled the MOS interface for diamond by wet annealing and fabricated p-channel and planar-type MOSFETs with phosphorus-doped n-type body on diamond (111) substrate. The gate oxide of Al2O3 was deposited onto the n-type diamond body by atomic layer deposition at 300 °C. The drain current was controlled by the negative gate voltage, indicating that an inversion channel with a p-type character was formed at a high-quality n-type diamond body/Al2O3 interface. The maximum drain current density and the field-effect mobility of a diamond MOSFET with a gate electrode length of 5 μm were 1.6 mA/mm and 8.0 cm2/Vs, respectively, at room temperature. PMID:27545201

  5. Super-resolution mapping of photogenerated electron and hole separation in single metal-semiconductor nanocatalysts.

    PubMed

    Ha, Ji Won; Ruberu, T Purnima A; Han, Rui; Dong, Bin; Vela, Javier; Fang, Ning

    2014-01-29

    Metal-semiconductor heterostructures are promising visible light photocatalysts for many chemical reactions. Here, we use high-resolution superlocalization imaging to reveal the nature and photocatalytic properties of the surface reactive sites on single Au-CdS hybrid nanocatalysts. We experimentally reveal two distinct, incident energy-dependent charge separation mechanisms that result in completely opposite photogenerated reactive sites (e(-) and h(+)) and divergent energy flows on the hybrid nanocatalysts. We find that plasmon-induced hot electrons in Au are injected into the conduction band of the CdS semiconductor nanorod. The specifically designed Au-tipped CdS heterostructures with a unique geometry (two Au nanoparticles at both ends of each CdS nanorod) provide more convincing high-resolution single-turnover mapping results and clearly prove the two charge separation mechanisms. Engineering the direction of energy flow at the nanoscale can provide an efficient way to overcome important challenges in photocatalysis, such as controlling catalytic activity and selectivity. These results bear enormous potential impact on the development of better visible light photocatalysts for solar-to-chemical energy conversion.

  6. Silicon carbide: A unique platform for metal-oxide-semiconductor physics

    NASA Astrophysics Data System (ADS)

    Liu, Gang; Tuttle, Blair R.; Dhar, Sarit

    2015-06-01

    A sustainable energy future requires power electronics that can enable significantly higher efficiencies in the generation, distribution, and usage of electrical energy. Silicon carbide (4H-SiC) is one of the most technologically advanced wide bandgap semiconductor that can outperform conventional silicon in terms of power handling, maximum operating temperature, and power conversion efficiency in power modules. While SiC Schottky diode is a mature technology, SiC power Metal Oxide Semiconductor Field Effect Transistors are relatively novel and there is large room for performance improvement. Specifically, major initiatives are under way to improve the inversion channel mobility and gate oxide stability in order to further reduce the on-resistance and enhance the gate reliability. Both problems relate to the defects near the SiO2/SiC interface, which have been the focus of intensive studies for more than a decade. Here we review research on the SiC MOS physics and technology, including its brief history, the state-of-art, and the latest progress in this field. We focus on the two main scientific problems, namely, low channel mobility and bias temperature instability. The possible mechanisms behind these issues are discussed at the device physics level as well as the atomic scale, with the support of published physical analysis and theoretical studies results. Some of the most exciting recent progress in interface engineering for improving the channel mobility and fundamental understanding of channel transport is reviewed.

  7. Newtype single-layer magnetic semiconductor in transition-metal dichalcogenides VX2 (X = S, Se and Te)

    PubMed Central

    Fuh, Huei-Ru; Chang, Ching-Ray; Wang, Yin-Kuo; Evans, Richard F. L.; Chantrell, Roy W.; Jeng, Horng-Tay

    2016-01-01

    We present a newtype 2-dimensional (2D) magnetic semiconductor based on transition-metal dichalcogenides VX2 (X = S, Se and Te) via first-principles calculations. The obtained indirect band gaps of monolayer VS2, VSe2, and VTe2 given from the generalized gradient approximation (GGA) are respectively 0.05, 0.22, and 0.20 eV, all with integer magnetic moments of 1.0 μB. The GGA plus on-site Coulomb interaction U (GGA + U) enhances the exchange splittings and raises the energy gap up to 0.38~0.65 eV. By adopting the GW approximation, we obtain converged G0W0 gaps of 1.3, 1.2, and 0.7 eV for VS2, VSe2, and VTe2 monolayers, respectively. They agree very well with our calculated HSE gaps of 1.1, 1.2, and 0.6 eV, respectively. The gap sizes as well as the metal-insulator transitions are tunable by applying the in-plane strain and/or changing the number of stacking layers. The Monte Carlo simulations illustrate very high Curie-temperatures of 292, 472, and 553 K for VS2, VSe2, and VTe2 monolayers, respectively. They are nearly or well beyond the room temperature. Combining the semiconducting energy gap, the 100% spin polarized valence and conduction bands, the room temperature TC, and the in-plane magnetic anisotropy together in a single layer VX2, this newtype 2D magnetic semiconductor shows great potential in future spintronics. PMID:27601195

  8. Chemoelectronic circuits based on metal nanoparticles.

    PubMed

    Yan, Yong; Warren, Scott C; Fuller, Patrick; Grzybowski, Bartosz A

    2016-07-01

    To develop electronic devices with novel functionalities and applications, various non-silicon-based materials are currently being explored. Nanoparticles have unique characteristics due to their small size, which can impart functions that are distinct from those of their bulk counterparts. The use of semiconductor nanoparticles has already led to improvements in the efficiency of solar cells, the processability of transistors and the sensitivity of photodetectors, and the optical and catalytic properties of metal nanoparticles have led to similar advances in plasmonics and energy conversion. However, metals screen electric fields and this has, so far, prevented their use in the design of all-metal nanoparticle circuitry. Here, we show that simple electronic circuits can be made exclusively from metal nanoparticles functionalized with charged organic ligands. In these materials, electronic currents are controlled by the ionic gradients of mobile counterions surrounding the 'jammed' nanoparticles. The nanoparticle-based electronic elements of the circuitry can be interfaced with metal nanoparticles capable of sensing various environmental changes (humidity, gas, the presence of various cations), creating electronic devices in which metal nanoparticles sense, process and ultimately report chemical signals. Because the constituent nanoparticles combine electronic and chemical sensing functions, we term these systems 'chemoelectronic'. The circuits have switching times comparable to those of polymer electronics, selectively transduce parts-per-trillion chemical changes into electrical signals, perform logic operations, consume little power (on the scale of microwatts), and are mechanically flexible. They are also 'green', in the sense that they comprise non-toxic nanoparticles cast at room temperature from alcohol solutions.

  9. Chemoelectronic circuits based on metal nanoparticles

    NASA Astrophysics Data System (ADS)

    Yan, Yong; Warren, Scott C.; Fuller, Patrick; Grzybowski, Bartosz A.

    2016-07-01

    To develop electronic devices with novel functionalities and applications, various non-silicon-based materials are currently being explored. Nanoparticles have unique characteristics due to their small size, which can impart functions that are distinct from those of their bulk counterparts. The use of semiconductor nanoparticles has already led to improvements in the efficiency of solar cells, the processability of transistors and the sensitivity of photodetectors, and the optical and catalytic properties of metal nanoparticles have led to similar advances in plasmonics and energy conversion. However, metals screen electric fields and this has, so far, prevented their use in the design of all-metal nanoparticle circuitry. Here, we show that simple electronic circuits can be made exclusively from metal nanoparticles functionalized with charged organic ligands. In these materials, electronic currents are controlled by the ionic gradients of mobile counterions surrounding the ‘jammed’ nanoparticles. The nanoparticle-based electronic elements of the circuitry can be interfaced with metal nanoparticles capable of sensing various environmental changes (humidity, gas, the presence of various cations), creating electronic devices in which metal nanoparticles sense, process and ultimately report chemical signals. Because the constituent nanoparticles combine electronic and chemical sensing functions, we term these systems ‘chemoelectronic’. The circuits have switching times comparable to those of polymer electronics, selectively transduce parts-per-trillion chemical changes into electrical signals, perform logic operations, consume little power (on the scale of microwatts), and are mechanically flexible. They are also ‘green’, in the sense that they comprise non-toxic nanoparticles cast at room temperature from alcohol solutions.

  10. Transport properties of silicon complementary-metal-oxide semiconductor quantum well field-effect transistors

    NASA Astrophysics Data System (ADS)

    Naquin, Clint Alan

    Introducing explicit quantum transport into silicon (Si) transistors in a manner compatible with industrial fabrication has proven challenging, yet has the potential to transform the performance horizons of large scale integrated Si devices and circuits. Explicit quantum transport as evidenced by negative differential transconductances (NDTCs) has been observed in a set of quantum well (QW) n-channel metal-oxide-semiconductor (NMOS) transistors fabricated using industrial silicon complementary MOS processing. The QW potential was formed via lateral ion implantation doping on a commercial 45 nm technology node process line, and measurements of the transfer characteristics show NDTCs up to room temperature. Detailed gate length and temperature dependence characteristics of the NDTCs in these devices have been measured. Gate length dependence of NDTCs shows a correlation of the interface channel length with the number of NDTCs formed as well as with the gate voltage (VG) spacing between NDTCs. The VG spacing between multiple NDTCs suggests a quasi-parabolic QW potential profile. The temperature dependence is consistent with partial freeze-out of carrier concentration against a degenerately doped background. A folding amplifier frequency multiplier circuit using a single QW NMOS transistor to generate a folded current-voltage transfer function via a NDTC was demonstrated. Time domain data shows frequency doubling in the kHz range at room temperature, and Fourier analysis confirms that the output is dominated by the second harmonic of the input. De-embedding the circuit response characteristics from parasitic cable and contact impedances suggests that in the absence of parasitics the doubling bandwidth could be as high as 10 GHz in a monolithic integrated circuit, limited by the transresistance magnitude of the QW NMOS. This is the first example of a QW device fabricated by mainstream Si CMOS technology being used in a circuit application and establishes the feasibility

  11. Hybrid photovoltaics based on semiconductor nanocrystals and amorphous silicon.

    PubMed

    Sun, Baoquan; Findikoglu, Alp T; Sykora, Milan; Werder, Donald J; Klimov, Victor I

    2009-03-01

    Semiconductor nanocrystals (NCs) are promising materials for applications in photovoltaic (PV) structures that could benefit from size-controlled tunability of absorption spectra, the ease of realization of various tandem architectures, and, perhaps, increased conversion efficiency in the ultraviolet region through carrier multiplication. The first practical step toward utilization of the unique properties of NCs in PV technologies could be through their integration into traditional silicon-based solar cells. Here, we demonstrate an example of such hybrid PV structures that combine colloidal NCs with amorphous silicon. In these structures, NCs and silicon are electronically coupled, and the regime of this coupling can be tuned by altering the alignment of NC energy states with regard to silicon band edges. For example, using wide-gap CdSe NCs we demonstrate a photoresponse which is exclusively due to the NCs. On the other hand, in devices comprising narrow-gap PbS NCs, both the NCs and silicon contribute to photocurrent, which results in PV response extending from the visible to the near-infrared region. The hybrid silicon/PbS NC solar cells show external quantum efficiencies of approximately 7% at infrared energies and 50% in the visible and a power conversion efficiency of up to 0.9%. This work demonstrates the feasibility of hybrid PV devices that combine advantages of mature silicon fabrication technologies with the unique electronic properties of semiconductor NCs.

  12. Radiation-induced trapped charge in metal-nitride-oxide-semiconductor structure

    SciTech Connect

    Takahashi, Y.; Ohnishi, K.; Fujimaki, T.; Yoshikawa, M.

    1999-12-01

    The radiation-induced trapped charge in insulation layer of metal-nitride-oxide-semiconductor (MNOS) structure has been investigated. The mechanism of charge trapping under irradiation is studied by the radiation-induced mid-gap voltage shift using a simple charge trap model. The depth profile of fixed charge in insulator before irradiation was evaluated by the mid-gap voltage of MNOS structures with varying insulator thicknesses using slanted etching method. The irradiation tests were carried out using Co-60 gamma ray source up to 1 Mrad(Si) with the gate voltage of +6 or {minus}6 V. The calculated results using the model can be fitted well to the experimental results, and the authors confirmed the model is very useful to discuss the radiation-induced trapped charge. By simulating the mid-gap voltage shift of MNOS structures, they considered the possibility for radiation hardened device.

  13. Technology of GaAs metal-oxide-semiconductor solar cells

    NASA Technical Reports Server (NTRS)

    Stirn, R. J.; Yeh, Y. C. M.

    1977-01-01

    The growth of an oxide interfacial layer was recently found to increase the open-circuit voltage (OCV) and efficiency by up to 60 per cent in GaAs metal-semiconductor solar cells. Details of oxidation techniques to provide the necessary oxide thickness and chemical structure and using ozone, water-vapor-saturated oxygen, or oxygen gas discharges are described, as well as apparent crystallographic orientation effects. Preliminary results of the oxide chemistry obtained from X-ray, photoelectron spectroscopy are given. Ratios of arsenic oxide to gallium oxide of unity or less seem to be preferable. Samples with the highest OVC predominantly have As(+3) in the arsenic oxide rather than As(+5). A major difficulty at this time is a reduction in OCV by 100-200 mV when the antireflection coating is vacuum deposited.

  14. Photochemical etching during ultraviolet photolytic deposition of metal films on semiconductor surfaces

    NASA Astrophysics Data System (ADS)

    Kowalczyk, Steven P.; Miller, D. L.

    1986-01-01

    UV photochemical deposition of Sn films on GaAs (001) surfaces from a variety of tin-containing compounds (tetramethyltin, tetrabutyltin, dibutyltin dibromide, stannic chloride, hexamethylditin, dibutyltin sulfide, and iodotrimethyltin) was studied. X-ray photoelectron spectroscopy showed that during the initial stages of deposition from the halogenated compounds, the GaAs surface was photochemically etched, most likely by a halogen radical species. The photochemical etching resulted in an arsenic deficient surface which was particularly dramatic for the case of SnCl4. These results have important implications for the choice of sources for photochemical deposition when the metal-semiconductor interface is important and for photochemical etching if stoichiometric surfaces are required.

  15. Metal-oxide-semiconductor capacitors on GaAs with germanium nitride passivation layer

    NASA Astrophysics Data System (ADS)

    Zhao, Han; Kim, Hyoung-Sub; Zhu, Feng; Zhang, Manhong; OK, Injo; Park, Sung Il; Yum, Jung Hwan; Lee, Jack C.

    2007-10-01

    We present gallium arsenide (GaAs) metal-oxide-semiconductor capacitors (MOSCAPs) with a thin HfO2 gate dielectric and a thin germanium nitride (GexNy) interfacial passivation layer (IPL). TaN /HfO2/GexNy/GaAs MOSCAPs show a low interface state density and a thin equivalent oxide thickness (1.6nm). Compared to GaAs MOSCAPs with germanium (Ge) IPL, the GexNy IPL has a smaller slow trap density, which is confirmed by improved C-V characteristics without humps near the flatband voltage. The lower rate of flatband voltage shift and gate leakage decreasing under constant gate voltage stress were also demonstrated in GaAs MOSCAPs with GexNy IPL than the Ge IPL.

  16. Magnetism in alkali-metal-doped wurtzite semiconductor materials controlled by strain engineering

    NASA Astrophysics Data System (ADS)

    Guo, J. H.; Li, T. H.; Liu, L. Z.; Hu, F. R.

    2016-09-01

    The study of the magnetism and optical properties of semiconductor materials by defect engineering has attracted much attention because of their potential uses in spintronic and optoelectronic devices. In this paper, first-principle calculations discloses that cationic vacancy formation energy of the doped wurtzite materials can be sharply decreased due to alkali metal dopants and shows that their magnetic properties strongly depend on defect and doping concentration. This effect can be ascribed to the volume change induced by foreign elements doped into the host system and atomic population's difference. The symmetric deformation induced by biaxial strain can further regulate this behavior. Our results suggest that the formation of cationic vacancy can be tailored by strain engineering and dopants incorporation.

  17. Dimensional optimization of nanowire--complementary metal oxide--semiconductor inverter.

    PubMed

    Hashim, Yasir; Sidek, Othman

    2013-01-01

    This study is the first to demonstrate dimensional optimization of nanowire-complementary metal-oxide-semiconductor inverter. Noise margins and inflection voltage of transfer characteristics are used as limiting factors in this optimization. Results indicate that optimization depends on both dimensions ratio and digital voltage level (Vdd). Diameter optimization reveals that when Vdd increases, the optimized value of (Dp/Dn) decreases. Channel length optimization results show that when Vdd increases, the optimized value of Ln decreases and that of (Lp/Ln) increases. Dimension ratio optimization reveals that when Vdd increases, the optimized value of Kp/Kn decreases, and silicon nanowire transistor with suitable dimensions (higher Dp and Ln with lower Lp and Dn) can be fabricated.

  18. Strongly modified four-wave mixing in a coupled semiconductor quantum dot-metal nanoparticle system

    NASA Astrophysics Data System (ADS)

    Paspalakis, Emmanuel; Evangelou, Sofia; Kosionis, Spyridon G.; Terzis, Andreas F.

    2014-02-01

    We study the four-wave mixing effect in a coupled semiconductor quantum dot-spherical metal nanoparticle structure. Depending on the values of the pump field intensity and frequency, we find that there is a critical distance that changes the form of the spectrum. Above this distance, the four-wave mixing spectrum shows an ordinary three-peaked form and the effect of controlling its magnitude by changing the interparticle distance can be obtained. Below this critical distance, the four-wave mixing spectrum becomes single-peaked; and as the interparticle distance decreases, the spectrum is strongly suppressed. The behavior of the system is explained using the effective Rabi frequency that creates plasmonic metaresonances in the hybrid structure. In addition, the behavior of the effective Rabi frequency is explained via an analytical solution of the density matrix equations.

  19. Optical bistability and hysteresis of a hybrid metal-semiconductor nanodimer

    NASA Astrophysics Data System (ADS)

    Malyshev, A. V.; Malyshev, V. A.

    2011-07-01

    Optical response of an artificial composite nanodimer comprising a semiconductor quantum dot and a metal nanosphere is analyzed theoretically. We show that internal degrees of freedom of the system can manifest bistability and optical hysteresis as functions of the incident field intensity. We argue that these effects can be observed for real-world systems, such as a CdSe quantum dot and an Au nanoparticle hybrid. These properties can be revealed by measuring the optical hysteresis of Rayleigh scattering. We also show that the total dipole moment of the system can be switched abruptly between its two stable states by small changes in the excitation intensity. The latter promises various applications in the field of all-optical processing at the nanoscale, the most basic of them being the volatile optical memory.

  20. Phonon softening and metallization of a narrow-gap semiconductor by thermal disorder

    PubMed Central

    Delaire, Olivier; Marty, Karol; Stone, Matthew B.; Kent, Paul R. C.; Lucas, Matthew S.; Abernathy, Douglas L.; Mandrus, David; Sales, Brian C.

    2011-01-01

    The vibrations of ions in solids at finite temperature depend on interatomic force–constants that result from electrostatic interactions between ions, and the response of the electron density to atomic displacements. At high temperatures, vibration amplitudes are substantial, and electronic states are affected, thus modifying the screening properties of the electron density. By combining inelastic neutron scattering measurements of Fe1-xCoxSi as a function of temperature, and finite-temperature first-principles calculations including thermal disorder effects, we show that the coupling between phonons and electronic structure results in an anomalous temperature dependence of phonons. The strong concomitant renormalization of the electronic structure induces the semiconductor-to-metal transition that occurs with increasing temperature in FeSi. Our results show that for systems with rapidly changing electronic densities of states at the Fermi level, there are likely to be significant phonon–electron interactions, resulting in anomalous temperature-dependent properties.

  1. Sharp semiconductor-to-metal transition of VO{sub 2} thin films on glass substrates

    SciTech Connect

    Jian, Jie; Chen, Aiping; Zhang, Wenrui; Wang, Haiyan

    2013-12-28

    Outstanding phase transition properties of vanadium dioxide (VO{sub 2}) thin films on amorphous glass were achieved and compared with the ones grown on c-cut sapphire and Si (111) substrates, all by pulsed laser deposition. The films on glass substrate exhibit a sharp semiconductor-to-metal transition (∼4.3 °C) at a near bulk transition temperature of ∼68.4 °C with an electrical resistance change as high as 3.2 × 10{sup 3} times. The excellent phase transition properties of the films on glass substrate are correlated with the large grain size and low defects density achieved. The phase transition properties of VO{sub 2} films on c-cut sapphire and Si (111) substrates were found to be limited by the high defect density.

  2. A Novel Metal-Ferroelectric-Semiconductor Field-Effect Transistor Memory Cell Design

    NASA Technical Reports Server (NTRS)

    Phillips, Thomas A.; Bailey, Mark; Ho, Fat Duen

    2004-01-01

    The use of a Metal-Ferroelectric-Semiconductor Field-Effect Transistor (MFSFET) in a resistive-load SRAM memory cell has been investigated A typical two-transistor resistive-load SRAM memory cell architecture is modified by replacing one of the NMOS transistors with an n-channel MFSFET. The gate of the MFSFET is connected to a polling voltage pulse instead of the other NMOS transistor drain. The polling voltage pulses are of sufficient magnitude to saturate the ferroelectric gate material and force the MFSFET into a particular logic state. The memory cell circuit is further modified by the addition of a PMOS transistor and a load resistor in order to improve the retention characteristics of the memory cell. The retention characteristics of both the "1" and "0" logic states are simulated. The simulations show that the MFSFET memory cell design can maintain both the "1" and "0" logic states for a long period of time.

  3. High and low threshold P-channel metal oxide semiconductor process and description of microelectronics facility

    NASA Technical Reports Server (NTRS)

    Bouldin, D. L.; Feltner, W. R.; Hollis, B. R.; Routh, D. E.

    1976-01-01

    The fabrication techniques and detail procedures for creating P-channel Metal-Oxide-Semiconductor (P-MOS) integrated circuits at George C. Marshall Space Flight Center (MSFC) are described. Examples of P-MOS integrated circuits fabricated at MSFC together with functional descriptions of each are given. Typical electrical characteristics of high and low threshold P-MOS discrete devices under given conditions are provided. A general description of MSFC design, mask making, packaging, and testing procedures is included. The capabilities described in this report are being utilized in: (1) research and development of new technology, (2) education of individuals in the various disciplines and technologies of the field of microelectronics, and (3) fabrication of many types of specially designed integrated circuits which are not commercially feasible in small quantities for in-house research and development programs.

  4. Studies of Thermophysical Properties of Metals and Semiconductors by Containerless Processing Under Microgravity

    NASA Technical Reports Server (NTRS)

    Seidel, A.; Soellner, W.; Stenzel, C.

    2012-01-01

    Electromagnetic levitation under microgravity provides unique opportunities for the investigation of liquid metals, alloys and semiconductors, both above and below their melting temperatures, with minimized disturbances of the sample under investigation. The opportunity to perform such experiments will soon be available on the ISS with the EML payload which is currently being integrated. With its high-performance diagnostics systems EML allows to measure various physical properties such as heat capacity, enthalpy of fusion, viscosity, surface tension, thermal expansion coefficient, and electrical conductivity. In studies of nucleation and solidification phenomena the nucleation kinetics, phase selection, and solidification velocity can be determined. Advanced measurement capabilities currently being studied include the measurement and control of the residual oxygen content of the process atmosphere and a complementary inductive technique to measure thermophysical properties.

  5. Modeling boron dose loss in sidewall spacer stacks of complementary metal oxide semiconductor transistors

    NASA Astrophysics Data System (ADS)

    Essa, Z.; Pelletier, B.; Morin, P.; Boulenc, P.; Pakfar, A.; Tavernier, C.; Wacquant, F.; Zechner, C.; Juhel, M.; Autran, J. L.; Cristiano, F.

    2016-12-01

    The presence of capping materials during annealing (activation for example) can substantially impact the silicon junction profiles of Complementary Metal Oxide Semiconductor Field Effect Transistors (CMOSFET), depending on the nature of these layers. In this paper we specifically investigated the boron out-diffusion from a silicon junction into the silicon oxide in presence of a silicon oxide/silicon nitride capping bi-layer similar to the stacks used to form sidewall spacers. After 120 s anneal we observed with secondary ion mass spectrometry (SIMS) substantial boron dose loss in silicon and segregation at the silicon oxide interface related to oxide and nitride material properties, in particular to the hydrogen concentration. We then modeled the boron profiles in both silicon and oxide as a function of the hydrogen static and dynamic in the materials. The exponential-like boron diffusion profiles observed in oxide are reproduced by introducing a long hop mechanism mediated with hydrogen-related defects (HRDs).

  6. Charge sensed Pauli blockade in a metal-oxide-semiconductor lateral double quantum dot.

    PubMed

    Nguyen, Khoi T; Lilly, Michael P; Nielsen, Erik; Bishop, Nathan; Rahman, Rajib; Young, Ralph; Wendt, Joel; Dominguez, Jason; Pluym, Tammy; Stevens, Jeffery; Lu, Tzu-Ming; Muller, Richard; Carroll, Malcolm S

    2013-01-01

    We report Pauli blockade in a multielectron silicon metal-oxide-semiconductor double quantum dot with an integrated charge sensor. The current is rectified up to a blockade energy of 0.18 ± 0.03 meV. The blockade energy is analogous to singlet-triplet splitting in a two electron double quantum dot. Built-in imbalances of tunnel rates in the MOS DQD obfuscate some edges of the bias triangles. A method to extract the bias triangles is described, and a numeric rate-equation simulation is used to understand the effect of tunneling imbalances and finite temperature on charge stability (honeycomb) diagram, in particular the identification of missing and shifting edges. A bound on relaxation time of the triplet-like state is also obtained from this measurement.

  7. Tungsten and other heavy metal contamination in aquatic environments receiving wastewater from semiconductor manufacturing.

    PubMed

    Hsu, Shih-Chieh; Hsieh, Hwey-Lian; Chen, Chang-Po; Tseng, Chun-Mao; Huang, Shou-Chung; Huang, Chou-Hao; Huang, Yi-Tang; Radashevsky, Vasily; Lin, Shuen-Hsin

    2011-05-15

    Through analyses of water and sediments, we investigate tungsten and 14 other heavy metals in a stream receiving treated effluents from a semiconductor manufacturer-clustered science park in Taiwan. Treated effluents account for ∼ 50% of total annual river discharge and <1% of total sediment discharge. Dissolved tungsten concentrations in the effluents abnormally reach 400 μg/L, as compared to the world river average concentration of <0.1 μg/L. Particulate tungsten concentrations are up to 300 μg/g in suspended and deposited sediments, and the corresponding enrichment factors are three orders of magnitude higher than average crust composition. Surprisingly, the estimated amount of tungsten exported to the adjacent ocean is 23.5 t/yr, which can approximate the amount from the Yangtze River should it be unpolluted. This study highlights the urgency of investigating the biological effect of such contamination.

  8. CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES: Spin-Polarized Carriers Injection from Ferromagnetic Metal into Organic Semiconductor

    NASA Astrophysics Data System (ADS)

    Qiao, Shi-Zhu; Zhao, Jun-Qing; Jia, Zhen-Feng; Zhang, Tian-You

    2010-10-01

    Charge carriers in organic semiconductor are different from that of traditional inorganic semiconductor. Based on three-current model, considering electrical field effect, we present a theoretical model to discuss spin-polarized injection from ferromagnetic electrode into organic semiconductor by analyzing electrochemical potential both in ferromagnetic electrode and organic semiconductors. The calculated result of this model shows effects of electrode's spin polarization, equilibrium value of polarons ratio, interfacial conductance, bulk conductivity of materials and electrical field. It is found that we could get decent spin polarization with common ferromagnetic electrode by increasing equilibrium value of polarons ratio. We also find that large and matched bulk conductivity of organic semiconductor and electrode, small spin-dependent interfacial conductance, and enough large electrical field are critical factors for increasing spin polarization.

  9. Measurement and simulation of top- and bottom-illuminated solar-blind AlGaN metal-semiconductor-metal photodetectors with high external quantum efficiencies

    SciTech Connect

    Brendel, Moritz Helbling, Markus; Knigge, Andrea; Brunner, Frank; Weyers, Markus

    2015-12-28

    A comprehensive study on top- and bottom-illuminated Al{sub 0.5}Ga{sub 0.5}N/AlN metal-semiconductor-metal (MSM) photodetectors having different AlGaN absorber layer thickness is presented. The measured external quantum efficiency (EQE) shows pronounced threshold and saturation behavior as a function of applied bias voltage up to 50 V reaching about 50% for 0.1 μm and 67% for 0.5 μm thick absorber layers under bottom illumination. All experimental findings are in very good accordance with two-dimensional drift-diffusion modeling results. By taking into account macroscopic polarization effects in the hexagonal metal-polar +c-plane AlGaN/AlN heterostructures, new insights into the general device functionality of AlGaN-based MSM photodetectors are obtained. The observed threshold/saturation behavior is caused by a bias-dependent extraction of photoexcited holes from the Al{sub 0.5}Ga{sub 0.5}N/AlN interface. While present under bottom illumination for any AlGaN layer thickness, under top illumination this mechanism influences the EQE-bias characteristics only for thin layers.

  10. Surface Plasmon Enhanced Sensitive Detection for Possible Signature of Majorana Fermions via a Hybrid Semiconductor Quantum Dot-Metal Nanoparticle System

    PubMed Central

    Chen, Hua-Jun; Zhu, Ka-Di

    2015-01-01

    In the present work, we theoretically propose an optical scheme to detect the possible signature of Majorana fermions via the optical pump-probe spectroscopy, which is very different from the current tunneling measurement based on electrical methods. The scheme consists of a metal nanoparticle and a semiconductor quantum dot coupled to a hybrid semiconductor/superconductor heterostructures. The results show that the probe absorption spectrum of the quantum dot presents a distinct splitting due to the existence of Majorana fermions. Owing to surface plasmon enhanced effect, this splitting will be more obvious, which makes Majorana fermions more easy to be detectable. The technique proposed here open the door for new applications ranging from robust manipulation of Majorana fermions to quantum information processing based on Majorana fermions. PMID:26310929

  11. Surface Plasmon Enhanced Sensitive Detection for Possible Signature of Majorana Fermions via a Hybrid Semiconductor Quantum Dot-Metal Nanoparticle System

    NASA Astrophysics Data System (ADS)

    Chen, Hua-Jun; Zhu, Ka-Di

    2015-08-01

    In the present work, we theoretically propose an optical scheme to detect the possible signature of Majorana fermions via the optical pump-probe spectroscopy, which is very different from the current tunneling measurement based on electrical methods. The scheme consists of a metal nanoparticle and a semiconductor quantum dot coupled to a hybrid semiconductor/superconductor heterostructures. The results show that the probe absorption spectrum of the quantum dot presents a distinct splitting due to the existence of Majorana fermions. Owing to surface plasmon enhanced effect, this splitting will be more obvious, which makes Majorana fermions more easy to be detectable. The technique proposed here open the door for new applications ranging from robust manipulation of Majorana fermions to quantum information processing based on Majorana fermions.

  12. Lateral amorphous selenium metal-insulator-semiconductor-insulator-metal photodetectors using ultrathin dielectric blocking layers for dark current suppression

    NASA Astrophysics Data System (ADS)

    Chang, Cheng-Yi; Pan, Fu-Ming; Lin, Jian-Siang; Yu, Tung-Yuan; Li, Yi-Ming; Chen, Chieh-Yang

    2016-12-01

    We fabricated amorphous selenium (a-Se) photodetectors with a lateral metal-insulator-semiconductor-insulator-metal (MISIM) device structure. Thermal aluminum oxide, plasma-enhanced chemical vapor deposited silicon nitride, and thermal atomic layer deposited (ALD) aluminum oxide and hafnium oxide (ALD-HfO2) were used as the electron and hole blocking layers of the MISIM photodetectors for dark current suppression. A reduction in the dark current by three orders of magnitude can be achieved at electric fields between 10 and 30 V/μm. The effective dark current suppression is primarily ascribed to electric field lowering in the dielectric layers as a result of charge trapping in deep levels. Photogenerated carriers in the a-Se layer can be transported across the blocking layers to the Al electrodes via Fowler-Nordheim tunneling because a high electric field develops in the ultrathin dielectric layers under illumination. Since the a-Se MISIM photodetectors have a very low dark current without significant degradation in the photoresponse, the signal contrast is greatly improved. The MISIM photodetector with the ALD-HfO2 blocking layer has an optimal signal contrast more than 500 times the contrast of the photodetector without a blocking layer at 15 V/μm.

  13. Flexible non-volatile memory devices based on organic semiconductors

    NASA Astrophysics Data System (ADS)

    Cosseddu, Piero; Casula, Giulia; Lai, Stefano; Bonfiglio, Annalisa

    2015-09-01

    The possibility of developing fully organic electronic circuits is critically dependent on the ability to realize a full set of electronic functionalities based on organic devices. In order to complete the scene, a fundamental element is still missing, i.e. reliable data storage. Over the past few years, a considerable effort has been spent on the development and optimization of organic polymer based memory elements. Among several possible solutions, transistor-based memories and resistive switching-based memories are attracting a great interest in the scientific community. In this paper, a route for the fabrication of organic semiconductor-based memory devices with performances beyond the state of the art is reported. Both the families of organic memories will be considered. A flexible resistive memory based on a novel combination of materials is presented. In particular, high retention time in ambient conditions are reported. Complementary, a low voltage transistor-based memory is presented. Low voltage operation is allowed by an hybrid, nano-sized dielectric, which is also responsible for the memory effect in the device. Thanks to the possibility of reproducibly fabricating such device on ultra-thin substrates, high mechanical stability is reported.

  14. Photonic crystal waveguides based on wide-gap semiconductor alloys

    NASA Astrophysics Data System (ADS)

    Martin, Aude; Combrié, Sylvain; De Rossi, Alfredo

    2017-03-01

    This review is devoted to integrated photonic platforms based on large band-gap semiconductors, alternatives to silicon photonics. The large electronic band gap of the material employed is chosen to address the specific needs of nonlinear optics, and, in particular, lower nonlinear losses and the capability of handling larger optical power densities. Moreover, these new platforms offer broader transmission spectra, extending to the visible spectral region, which is also required for other applications, particularly sensing and bio-related photonics. The focus is on nanoscale patterned waveguiding structures, which, owing to the tight confinement of light, have demonstrated a large nonlinear response. The third-order nonlinear response and the related parametric interactions will be considered here, encompassing four-wave mixing, phase-sensitive amplification, wavelength conversion, and also nonlinear pulse propagation and soliton dynamics. The comparison between different materials and waveguide design highlights specific features of photonic crystal waveguides.

  15. Supramolecular luminescence from oligofluorenol-based supramolecular polymer semiconductors.

    PubMed

    Zhang, Guang-Wei; Wang, Long; Xie, Ling-Hai; Lin, Jin-Yi; Huang, Wei

    2013-11-13

    Supramolecular luminescence stems from non-covalent exciton behaviors of active π-segments in supramolecular entities or aggregates via intermolecular forces. Herein, a π-conjugated oligofluorenol, containing self-complementary double hydrogen bonds, was synthesized using Suzuki coupling as a supramolecular semiconductor. Terfluorenol-based random supramolecular polymers were confirmed via concentration-dependent nuclear magnetic resonance (NMR) and dynamic light scattering (DLS). The photoluminescent spectra of the TFOH-1 solution exhibit a green emission band (g-band) at approximately ~520 nm with reversible features, as confirmed through titration experiments. Supramolecular luminescence of TFOH-1 thin films serves as robust evidence for the aggregates of g-band. Our results suggest that the presence of polyfluorene ketone defects is a sufficient condition, rather than a sufficient-necessary condition for the g-band. Supramolecular electroluminescence will push organic devices into the fields of supramolecular optoelectronics, spintronics, and mechatronics.

  16. Organic molecules on metal and oxide semiconductor substrates: Adsorption behavior and electronic energy level alignment

    NASA Astrophysics Data System (ADS)

    Ruggieri, Charles M.

    Modern devices such as organic light emitting diodes use organic/oxide and organic/metal interfaces for crucial processes such as charge injection and charge transfer. Understanding fundamental physical processes occurring at these interfaces is essential to improving device performance. The ultimate goal of studying such interfaces is to form a predictive model of interfacial interactions, which has not yet been established. To this end, this thesis focuses on obtaining a better understanding of fundamental physical interactions governing molecular self-assembly and electronic energy level alignment at organic/metal and organic/oxide interfaces. This is accomplished by investigating both the molecular adsorption geometry using scanning tunneling microscopy, as well as the electronic structure at the interface using direct and inverse photoemission spectroscopy, and analyzing the results in the context of first principles electronic structure calculations. First, we study the adsorption geometry of zinc tetraphenylporphyrin (ZnTPP) molecules on three noble metal surfaces: Au(111), Ag(111), and Ag(100). These surfaces were chosen to systematically compare the molecular self-assembly and adsorption behavior on two metals of the same surface symmetry and two surface symmetries of one metal. From this investigation, we improve the understanding of self-assembly at organic/metal interfaces and the relative strengths of competing intermolecular and molecule-substrate interactions that influence molecular adsorption geometry. We then investigate the electronic structure of the ZnTPP/Au(111), Ag(111), and Ag(100) interfaces as examples of weakly-interacting systems. We compare these cases to ZnTPP on TiO2(110), a wide-bandgap oxide semiconductor, and explain the intermolecular and molecule-substrate interactions that determine the electronic energy level alignment at the interface. Finally we study tetracyanoquinodimethane (TCNQ), a strong electron acceptor, on TiO2

  17. Unipolar resistive switching in metal oxide/organic semiconductor non-volatile memories as a critical phenomenon

    SciTech Connect

    Bory, Benjamin F.; Meskers, Stefan C. J.; Rocha, Paulo R. F.; Gomes, Henrique L.; Leeuw, Dago M. de

    2015-11-28

    Diodes incorporating a bilayer of an organic semiconductor and a wide bandgap metal oxide can show unipolar, non-volatile memory behavior after electroforming. The prolonged bias voltage stress induces defects in the metal oxide with an areal density exceeding 10{sup 17 }m{sup −2}. We explain the electrical bistability by the coexistence of two thermodynamically stable phases at the interface between an organic semiconductor and metal oxide. One phase contains mainly ionized defects and has a low work function, while the other phase has mainly neutral defects and a high work function. In the diodes, domains of the phase with a low work function constitute current filaments. The phase composition and critical temperature are derived from a 2D Ising model as a function of chemical potential. The model predicts filamentary conduction exhibiting a negative differential resistance and nonvolatile memory behavior. The model is expected to be generally applicable to any bilayer system that shows unipolar resistive switching.

  18. PRECISION CLEANING OF SEMICONDUCTOR SURFACES USING CARBON DIOXIDE-BASED FLUIDS

    SciTech Connect

    J. RUBIN; L. SIVILS; A. BUSNAINA

    1999-07-01

    The Los Alamos National Laboratory, on behalf of the Hewlett-Packard Company, is conducting tests of a closed-loop CO{sub 2}-based supercritical fluid process, known as Supercritical CO{sub 2} Resist Remover (SCORR). We have shown that this treatment process is effective in removing hard-baked, ion-implanted photoresists, and appears to be fully compatible with metallization systems. We are now performing experiments on production wafers to assess not only photoresist removal, but also residual surface contamination due to particulate and trace metals. Dense-phase (liquid or supercritical) CO{sub 2}, since it is non-polar, acts like an organic solvent and therefore has an inherently high volubility for organic compounds such as oils and greases. Also, dense CO{sub 2} has a low-viscosity and a low dielectric constant. Finally, CO{sub 2} in the liquid and supercritical fluid states can solubilize metal completing agents and surfactants. This combination of properties has interesting implications for the removal not only of organic films, but also trace metals and inorganic particulate. In this paper we discuss the possibility of using CO{sub 2} as a precision-cleaning solvent, with particular emphasis on semiconductor surfaces.

  19. Emission and Dynamics of Charge Carriers in Uncoated and Organic/Metal Coated Semiconductor Nanowires

    NASA Astrophysics Data System (ADS)

    Kaveh Baghbadorani, Masoud

    In this dissertation, the dynamics of excitons in hybrid metal/organic/nanowire structures possessing nanometer thick deposited molecular and metal films on top of InP and GaAs nanowire (NW) surfaces were investigated. Optical characterizations were carried out as a function of the semiconductor NW material, design, NW size and the type and thickness of the organic material and metal used. Hybrid organic and plasmonic semiconductor nanowire heterostructures were fabricated using organic molecular beam deposition technique. I investigated the photon emission of excitons in 150 nm diameter polytype wurtzite/zincblende InP NWs and the influence of a few ten nanometer thick organic and metal films on the emission using intensity- and temperature-dependent time-integrated and time resolved (TR) photoluminescence (PL). The plasmonic NWs were coated with an Aluminum quinoline (Alq3) interlayer and magnesium-silver (Mg0.9:Ag0.1) top layer. In addition, the nonlinear optical technique of heterodyne four-wave mixing was used (in collaboration with Prof. Wolfgang Langbein, University of Cardiff) to study incoherent and coherent carrier relaxation processes on bare nanowires on a 100 femtosecond time-scale. Alq3 covered NWs reveal a stronger emission and a longer decay time of exciton transitions indicating surface state passivation at the Alq3/NW interface. Alq3/Mg:Ag NWs reveal a strong quenching of the exciton emission which is predominantly attributed to Forster energy-transfer from excitons to plasmon oscillations in the metal cluster film. Changing the Mg:Ag to gold and the organic Alq3 spacer layer to PTCDA leads to a similar behavior, but the PL quenching is strongly increased. The observed behavior is attributed to a more continuous gold deposition leading to an increased Forster energy transfer and to a metal induced band-bending. I also investigated ensembles of bare and gold/Alq3 coated GaAs-AlGaAs-GaAs core shell NWs of 130 nm diameter. Plasmonic NWs with Au

  20. Realizing semiconductor-half-metal transition in zigzag graphene nanoribbons supported on hybrid fluorographene-graphane nanoribbons.

    PubMed

    Tang, Shaobin; Cao, Xinrui

    2014-11-14

    Hydrogenation and fluorination provide promising applications for tuning the properties of graphene-based nanomaterials. Using first-principles calculations, we investigate the electronic and magnetic properties of zigzag graphene nanoribbons (ZGNRs) supported on hydrogenated and fluorinated ZGNRs. Our results indicate that the support of zigzag graphane nanoribbon with its full width has less impact on the electronic and magnetic properties of ZGNRs, whereas the ZGNRs supported on fluorographene nanoribbons can be tuned to metal with almost degenerated ferro- and anti-ferromagnetic states due to the intrinsic polarization of substrate. The ZGNRs supported on zigzag hybrid fluorographene-graphane nanoribbons are spin-polarized half-semiconductors with distinct band gaps for spin-up and spin-down channels. Interestingly, in the absence of an external electric field, the spin-polarized band gaps of supported ZGNRs can be well modulated in the opposite direction by changing the ratio of fluorination to hydrogenation concentration in hybrid substrates. Furthermore, the ZGNRs supported on hybrid nanoribbons exhibit the half-semiconducting to half-metallic behavior transition as the interlayer spacing is gradually reduced, which is realized more easily for the hybrid support with a relatively wide fluorographene moiety compared to its narrow counterpart. Present results provide a novel way for designing substrate-supported graphene spintronic devices.

  1. Electrical Switching in Semiconductor-Metal Self-Assembled VO2 Disordered Metamaterial Coatings

    NASA Astrophysics Data System (ADS)

    Kumar, Sunil; Maury, Francis; Bahlawane, Naoufal

    2016-11-01

    As a strongly correlated metal oxide, VO2 inspires several highly technological applications. The challenging reliable wafer-scale synthesis of high quality polycrystalline VO2 coatings is demonstrated on 4” Si taking advantage of the oxidative sintering of chemically vapor deposited VO2 films. This approach results in films with a semiconductor-metal transition (SMT) quality approaching that of the epitaxial counterpart. SMT occurs with an abrupt electrical resistivity change exceeding three orders of magnitude with a narrow hysteresis width. Spatially resolved infrared and Raman analyses evidence the self-assembly of VO2 disordered metamaterial, compresing monoclinic (M1 and M2) and rutile (R) domains, at the transition temperature region. The M2 mediation of the M1-R transition is spatially confined and related to the localized strain-stabilization of the M2 phase. The presence of the M2 phase is supposed to play a role as a minor semiconducting phase far above the SMT temperature. In terms of application, we show that the VO2 disordered self-assembly of M and R phases is highly stable and can be thermally triggered with high precision using short heating or cooling pulses with adjusted strengths. Such a control enables an accurate and tunable thermal control of the electrical switching.

  2. Transition from half metal to semiconductor in Li doped g-C4N3

    NASA Astrophysics Data System (ADS)

    Hashmi, Arqum; Hu, Tao; Hong, Jisang

    2014-03-01

    We have investigated the structural and magnetic properties of Li doped graphitic carbon nitride (g-C4N3) using the van der Waals density functional theory. A free standing g-C4N3 was known to show a half metallic state with buckling geometry, but this feature completely disappears in the presence of Li doping. Besides this structural modification, very interestingly, we have obtained that the Li doped g-C4N3 shows dramatic change in its electronic structure. Both ferromagnetic and nonmagnetic states are almost degenerated in one Li atom doped system. However, the transition from half metallic state to semiconductor is observed with further increase of Li concentration and the calculated energy gap is 1.97 eV. We found that Li impurity plays as a donor element and charge transfer from the Li atom to neighboring N atoms induces a band gap. Overall, we have observed that the electronic and magnetic properties of g-C4N3 are substantially modified by Li doping.

  3. Core/shell nano-structuring of metal oxide semiconductors and their photocatalytic studies

    NASA Astrophysics Data System (ADS)

    Balakumar, S.; Rakkesh, R. Ajay

    2013-02-01

    Core/Shell Nanostructures of Metal Oxide Semiconductors (MOS) have attracted much attention because of their most fascinating tunable applications. These core shell morphologies can be easily engineered to enhance the unique properties of the metal-oxide nanostructures, which make them suitable as photocatalyst due to their high catalytic activity, substantial stability, and brilliant perspective in applications. This paper provides an overview on our work on the synthesis of some interesting core/ shell nanostructures of MOS such as ZnO-TiO2, ZnO-MoO3, and V2O5-TiO2 using a low temperature wet chemical route and hydrothermal techniques and their photocatalytic properties from the aspects of different shell materials and shell thicknesses. The effect of process parameters such as pH, temperature, and ratio of core and shell materials, was systematically studied. Here the evidence for the core shell formation with different shell thicknesses came from the X-ray diffraction peak intensities. The shell thickness variation was also confirmed by Transmission Electron Microscopic studies. Effect of shell thickness on optical band gap of the core shell fabricated was also investigated using DRS UV-Visible spectroscopy. A comprehensive study was carried out for the photocatalytic efficiency of core shell nanostructures by evaluating the photo-degradation of Acridine Orange (AO) dye in aqueous solution under visible and solar light irradiations. These results offered simple approaches to the nanoscale engineering and synthesis of MOS hybrid systems to serve as better photocatalytic materials.

  4. Metal-oxide-semiconductor capacitors and Schottky diodes studied with scanning microwave microscopy at 18 GHz

    NASA Astrophysics Data System (ADS)

    Kasper, M.; Gramse, G.; Hoffmann, J.; Gaquiere, C.; Feger, R.; Stelzer, A.; Smoliner, J.; Kienberger, F.

    2014-11-01

    We measured the DC and RF impedance characteristics of micrometric metal-oxide-semiconductor (MOS) capacitors and Schottky diodes using scanning microwave microscopy (SMM). The SMM consisting of an atomic force microscopy (AFM) interfaced with a vector network analyser (VNA) was used to measure the reflection S11 coefficient of the metallic MOS and Schottky contact pads at 18 GHz as a function of the tip bias voltage. By controlling the SMM biasing conditions, the AFM tip was used to bias the Schottky contacts between reverse and forward mode. In reverse bias direction, the Schottky contacts showed mostly a change in the imaginary part of the admittance while in forward bias direction the change was mostly in the real part of the admittance. Reference MOS capacitors which are next to the Schottky diodes on the same sample were used to calibrate the SMM S11 data and convert it into capacitance values. Calibrated capacitance between 1-10 fF and 1/C2 spectroscopy curves were acquired on the different Schottky diodes as a function of the DC bias voltage following a linear behavior. Additionally, measurements were done directly with the AFM-tip in contact with the silicon substrate forming a nanoscale Schottky contact. Similar capacitance-voltage curves were obtained but with smaller values (30-300 aF) due to the corresponding smaller AFM-tip diameter. Calibrated capacitance images of both the MOS and Schottky contacts were acquired with nanoscale resolution at different tip-bias voltages.

  5. Electrical Switching in Semiconductor-Metal Self-Assembled VO2 Disordered Metamaterial Coatings

    PubMed Central

    Kumar, Sunil; Maury, Francis; Bahlawane, Naoufal

    2016-01-01

    As a strongly correlated metal oxide, VO2 inspires several highly technological applications. The challenging reliable wafer-scale synthesis of high quality polycrystalline VO2 coatings is demonstrated on 4” Si taking advantage of the oxidative sintering of chemically vapor deposited VO2 films. This approach results in films with a semiconductor-metal transition (SMT) quality approaching that of the epitaxial counterpart. SMT occurs with an abrupt electrical resistivity change exceeding three orders of magnitude with a narrow hysteresis width. Spatially resolved infrared and Raman analyses evidence the self-assembly of VO2 disordered metamaterial, compresing monoclinic (M1 and M2) and rutile (R) domains, at the transition temperature region. The M2 mediation of the M1-R transition is spatially confined and related to the localized strain-stabilization of the M2 phase. The presence of the M2 phase is supposed to play a role as a minor semiconducting phase far above the SMT temperature. In terms of application, we show that the VO2 disordered self-assembly of M and R phases is highly stable and can be thermally triggered with high precision using short heating or cooling pulses with adjusted strengths. Such a control enables an accurate and tunable thermal control of the electrical switching. PMID:27883052

  6. Electric-Field-Driven Dual Vacancies Evolution in Ultrathin Nanosheets Realizing Reversible Semiconductor to Half-Metal Transition.

    PubMed

    Lyu, Mengjie; Liu, Youwen; Zhi, Yuduo; Xiao, Chong; Gu, Bingchuan; Hua, Xuemin; Fan, Shaojuan; Lin, Yue; Bai, Wei; Tong, Wei; Zou, Youming; Pan, Bicai; Ye, Bangjiao; Xie, Yi

    2015-12-02

    Fabricating a flexible room-temperature ferromagnetic resistive-switching random access memory (RRAM) device is of fundamental importance to integrate nonvolatile memory and spintronics both in theory and practice for modern information technology and has the potential to bring about revolutionary new foldable information-storage devices. Here, we show that a relatively low operating voltage (+1.4 V/-1.5 V, the corresponding electric field is around 20,000 V/cm) drives the dual vacancies evolution in ultrathin SnO2 nanosheets at room temperature, which causes the reversible transition between semiconductor and half-metal, accompanyied by an abrupt conductivity change up to 10(3) times, exhibiting room-temperature ferromagnetism in two resistance states. Positron annihilation spectroscopy and electron spin resonance results show that the Sn/O dual vacancies in the ultrathin SnO2 nanosheets evolve to isolated Sn vacancy under electric field, accounting for the switching behavior of SnO2 ultrathin nanosheets; on the other hand, the different defect types correspond to different conduction natures, realizing the transition between semiconductor and half-metal. Our result represents a crucial step to create new a information-storage device realizing the reversible transition between semiconductor and half-metal with flexibility and room-temperature ferromagnetism at low energy consumption. The as-obtained half-metal in the low-resistance state broadens the application of the device in spintronics and the semiconductor to half-metal transition on the basis of defects evolution and also opens up a new avenue for exploring random access memory mechanisms and finding new half-metals for spintronics.

  7. Design of nanophotonic, hot-electron solar-blind ultraviolet detectors with a metal-oxide-semiconductor structure

    NASA Astrophysics Data System (ADS)

    Wang, Zhiyuan; Wang, Xiaoxin; Liu, Jifeng

    2014-12-01

    Solar-blind ultraviolet (UV) detection refers to photon detection specifically in the wavelength range of 200 nm-320 nm. Without background noises from solar radiation, it has broad applications from homeland security to environmental monitoring. The most commonly used solid state devices for this application are wide band gap (WBG) semiconductor photodetectors (Eg > 3.5 eV). However, WBG semiconductors are difficult to grow and integrate with Si readout integrated circuits (ROICs). In this paper, we design a nanophotonic metal-oxide-semiconductor structure on Si for solar-blind UV detectors. Instead of using semiconductors as the active absorber, we use Sn nano-grating structures to absorb UV photons and generate hot electrons for internal photoemission across the Sn/SiO2 interfacial barrier, thereby generating photocurrent between the metal and the n-type Si region upon UV excitation. Moreover, the transported hot electron has an excess kinetic energy >3 eV, large enough to induce impact ionization and generate another free electron in the conduction band of n-Si. This process doubles the quantum efficiency. On the other hand, the large metal/oxide interfacial energy barrier (>3.5 eV) also enables solar-blind UV detection by blocking the less energetic electrons excited by visible photons. With optimized design, ˜75% UV absorption and hot electron excitation can be achieved within the mean free path of ˜20 nm from the metal/oxide interface. This feature greatly enhances hot electron transport across the interfacial barrier to generate photocurrent. The simple geometry of the Sn nano-gratings and the MOS structure make it easy to fabricate and integrate with Si ROICs compared to existing solar-blind UV detection schemes. The presented device structure also breaks through the conventional notion that photon absorption by metal is always a loss in solid-state photodetectors, and it can potentially be extended to other active metal photonic devices.

  8. Semiconductor-to-metal phase change in MoTe2 layers (Conference Presentation)

    NASA Astrophysics Data System (ADS)

    Davydov, Albert V.; Krylyuk, Sergiy; Kalish, Irina; Meshi, Louisa; Beams, Ryan; Kalanyan, Berc; Sharma, Deepak K.; Beck, Megan; Bergeron, Hadallia; Hersam, Mark C.

    2016-09-01

    Molybdenum ditelluride (MoTe2), which can exist in a semiconducting prismatic hexagonal (2H) or a metallic distorted octahedral (1T') phases, is one of the very few materials that exhibit metal-semiconductor transition. Temperature-driven 2H - 1T' phase transition in bulk MoTe2 occurs at high temperatures (above 900 °C) and it is usually accompanied by Te loss. The latter can exacerbate the control over reversibility of the phase transition. Here, we study effects of high-temperature annealing on phase transition in MoTe2 single crystals. First, MoTe2 were grown in sealed evacuated quartz ampoules from polycrystalline MoTe2 powder in an iodine-assisted chemical vapor transport process at 1000 °C. The 2H and 1T' phases were stabilized by controlling the cooling rate after the growth. In particular, slow cooling at 10 °C/h rate yielded the 2H phase whereas the 1T' phase was stabilized by ice-water quenching. Next, the phase conversion was achieved by annealing MoTe2 single crystals in vacuum-sealed ampoules at 1000 °C with or without additional poly-MoTe2 powder followed by fast or slow cooling. Similarly to the CVT growth, slow cooling and quenching consistently produced 2H and 1T' phases, respectively, regardless of the initial MoTe2 crystal structure. We will discuss structural and optical properties of the as-grown and phase-converted MoTe2 single crystals using TEM, SEM/EDS, XRD, XPS and Raman. Electrical characteristics of two-terminal devices made from metallic 1T' and bottom-gated FETs made from 2H exfoliated crystals will also be presented.

  9. Metal-semiconductor phase transition of order arrays of VO2 nanocrystals

    NASA Astrophysics Data System (ADS)

    Lopez, Rene; Suh, Jae; Feldman, Leonard; Haglund, Richard

    2004-03-01

    The study of solid-state phase transitions at nanometer length scales provides new insights into the effects of material size on the mechanisms of structural transformations. Such research also opens the door to new applications, either because materials properties are modified as a function of particle size, or because the nanoparticles interact with a surrounding matrix material, or with each other. In this paper, we describe the formation of vanadium dioxide nanoparticles in silicon substrates by pulsed laser deposition of ion beam lithographically selected sites and thermal processing. We observe the collective behavior of 50 nm diameter VO2 oblate nanoparticles, 10 nm high, and ordered in square arrays with arbitrary lattice constant. The metal-semiconductor-transition of the VO2 precipitates shows different features in each lattice spacing substrate. The materials are characterized by electron microscopy, x-ray diffraction, Rutherford backscattering. The features of the phase transition are studied via infrared optical spectroscopy. Of particular interest are the enhanced scattering and the surface plasmon resonance when the particles reach the metallic state. This resonance amplifies the optical contrast in the range of near-infrared optical communication wavelengths and it is altered by the particle-particle coupling as in the case of noble metals. In addition the VO2 nanoparticles exhibit sharp transitions with up to 50 K of hysteresis, one of the largest values ever reported for this transition. The optical properties of the VO2 nanoarrays are correlated with the size of the precipitates and their inter-particle distance. Nonlinear and ultra fast optical measurements have shown that the transition is the fastest known solid-solid transformation. The VO2 nanoparticles show the same bulk property, transforming in times shorter than 150 fs. This makes them remarkable candidates for ultrafast optical and electronic switching applications.

  10. Development of epitaxial AlxSc1-xN for artificially structured metal/semiconductor superlattice metamaterials

    DOE PAGES

    Sands, Timothy D.; Stach, Eric A.; Saha, Bivas; ...

    2015-02-01

    Epitaxial nitride rocksalt metal/semiconductor superlattices are emerging as a novel class of artificially structured materials that have generated significant interest in recent years for their potential application in plasmonic and thermoelectric devices. Though most nitride metals are rocksalt, nitride semiconductors in general have hexagonal crystal structure. We report rocksalt aluminum scandium nitride (Al,Sc)N alloys as the semiconducting component in epitaxial rocksalt metal/semiconductor superlattices. The AlxSc1-xN alloys when deposited directly on MgO substrates are stabilized in a homogeneous rocksalt (single) phase when x < 0.51. Employing 20 nm TiN as a seed layer on MgO substrates, the homogeneity range for stabilizingmore » the rocksalt phase has been extended to x < 0.82 for a 120 nm film. The rocksalt AlxSc1-xN alloys show moderate direct bandgap bowing with a bowing parameter, B = 1.41 ± 0.19 eV. The direct bandgap of metastable rocksalt AlN is extrapolated to be 4.70 ± 0.20 eV. The tunable lattice parameter, bandgap, dielectric permittivity, and electronic properties of rocksalt AlxSc1-xN alloys enable high quality epitaxial rocksalt metal/AlxSc1-xN superlattices with a wide range of accessible metamaterials properties.« less

  11. Photoinduced 2-way electron transfer in composites of metal nanoclusters and semiconductor quantum dots

    NASA Astrophysics Data System (ADS)

    Mondal, Navendu; Paul, Sneha; Samanta, Anunay

    2016-07-01

    In order to explore the potential of nanocomposites comprising semiconductor quantum dots (QDs) and metal nanoclusters (NCs) in photovoltaic and catalytic applications, the interaction between CdTe QDs and gold NCs, Au10 and Au25, stabilized by histidine, bovine serum albumin (BSA) and glutathione, is studied by an ultrafast transient absorption (TA) technique. Temporal and spectral studies of the transients reveal photoinduced 2-way electron transfer between the two constituents of the nanocomposites, where Au NCs, which generally act as electron donors when used as photosensitizers, perform the role of the efficient electron acceptor. Interestingly, it is found that the electron transfer dynamics in these composites is governed not by the distance of separation of the constituents but by the nature of the surface capping ligands. Despite a large separation between the QDs and NCs in a giant BSA-capped system, a higher electron transfer rate in this composite suggests that unlike other smaller capping agents, which act more like insulators, BSA allows much better electron conduction, as indicated previously.In order to explore the potential of nanocomposites comprising semiconductor quantum dots (QDs) and metal nanoclusters (NCs) in photovoltaic and catalytic applications, the interaction between CdTe QDs and gold NCs, Au10 and Au25, stabilized by histidine, bovine serum albumin (BSA) and glutathione, is studied by an ultrafast transient absorption (TA) technique. Temporal and spectral studies of the transients reveal photoinduced 2-way electron transfer between the two constituents of the nanocomposites, where Au NCs, which generally act as electron donors when used as photosensitizers, perform the role of the efficient electron acceptor. Interestingly, it is found that the electron transfer dynamics in these composites is governed not by the distance of separation of the constituents but by the nature of the surface capping ligands. Despite a large separation

  12. Low Temperature Processed Complementary Metal Oxide Semiconductor (CMOS) Device by Oxidation Effect from Capping Layer

    PubMed Central

    Wang, Zhenwei; Al-Jawhari, Hala A.; Nayak, Pradipta K.; Caraveo-Frescas, J. A.; Wei, Nini; Hedhili, M. N.; Alshareef, H. N.

    2015-01-01

    In this report, both p- and n-type tin oxide thin-film transistors (TFTs) were simultaneously achieved using single-step deposition of the tin oxide channel layer. The tuning of charge carrier polarity in the tin oxide channel is achieved by selectively depositing a copper oxide capping layer on top of tin oxide, which serves as an oxygen source, providing additional oxygen to form an n-type tin dioxide phase. The oxidation process can be realized by annealing at temperature as low as 190°C in air, which is significantly lower than the temperature generally required to form tin dioxide. Based on this approach, CMOS inverters based entirely on tin oxide TFTs were fabricated. Our method provides a solution to lower the process temperature for tin dioxide phase, which facilitates the application of this transparent oxide semiconductor in emerging electronic devices field. PMID:25892711

  13. Magnetism, half-metallicity and electrical transport properties of V- and Cr-doped semiconductor SnTe: A theoretical study

    SciTech Connect

    Liu, Y.; Bose, S. K.; Kudrnovský, J.

    2013-12-07

    This work presents results for the electronic structure, magnetic properties, and electrical resistivity of the semiconductor SnTe doped with 3d transition metals V and Cr. From the standpoint of potential application in spintronics, we look for half-metallic states and analyze their properties in both rock salt and zinc blende structures using ab initio electronic structure methods. In both cases, it is the Sn-sublattice that is doped with the transition metals, as has been the case with experiments performed so far. We find four half-metallic compounds at their optimized cell volumes. Results of exchange interactions and the Curie temperature are presented and analyzed for all the relevant cases. Resistivity calculation based on Kubo-Greenwood formalism shows that the resistivities of these alloys due to transition metal doping of the Sn-sublattice may vary, in most cases, from typical liquid metal or metallic glass value to 2–3 times higher. 25% V-doping of the Sn-sublattice in the rock salt structure gives a very high resistivity, which can be traced to high values of the lattice parameter resulting in drastically reduced hopping or diffusivity of the states at the Fermi level.

  14. Oxygen and germanium migration at low temperature influenced by the thermodynamic nature of the materials used in germanium metal-insulator-semiconductor structures

    SciTech Connect

    Kato, Kimihiko; Taoka, Noriyuki; Sakashita, Mitsuo; Nakatsuka, Osamu Zaima, Shigeaki

    2015-09-07

    The influence of the reductive character of the metals used for the gate electrode on O migration in gate stacks and following reductive or oxidative reactions at an interface between a high permittivity (high-k) insulating layer and Ge or Si was investigated. The magnitude of the increase or decrease of Ge or Si oxides in the gate stacks caused by the metal layer deposition can be systematically correlated with the oxygen chemical potential (μ{sub O}) of gate metals for both Ge and Si systems. However, the influence of the gate metals on oxidative/reductive reactions of a semiconductor element is more significant for the Ge gate stacks than the Si system. Detailed investigations of Ge oxide as a function of depth were used to determine that the strong μ{sub O} dependence of the increase or decrease in the Ge oxide is because of the high diffusivity of Ge into the high-k oxide. In particular, migration of Ge into the high-k oxide occurs concurrently with O migration towards the reductive metal layer, and the strong reductive character of the metal significantly influences the decrease in the amount of Ge oxide. These results indicate the importance of the selection of gate metals based on μ{sub O} for controlling high-k/Ge interfacial structures.

  15. Analysis of the electroluminescence features of silicon metal-insulator-semiconductor structures as a tool for diagnostics of the injection properties of a dielectric layer

    NASA Astrophysics Data System (ADS)

    Illarionov, Yu. Yu.; Vexler, M. I.; Isakov, D.; Fedorov, V. V.; Sing, Yew Kwang

    2013-10-01

    A technique for diagnostics of the injection properties of thin dielectric layers based on analysis of the data on silicon electroluminescence in a metal-insulator-semiconductor structure is proposed. The possibility of applying this technique to control the electron injection energy (in particular, when the barrier parameters are poorly known) is demonstrated by the example of samples with CaF2 and HfO2/SiO2. The results obtained are important for application of the insulators under study in microelectronic devices.

  16. New Performance Indicators of Metal-Oxide-Semiconductor Field-Effect Transistors for High-Frequency Power-Conscious Design

    NASA Astrophysics Data System (ADS)

    Katayama, Kosuke; Fujishima, Minoru

    2012-02-01

    With the progress of complementary metal-oxide-semiconductor (CMOS) process technology, it is possible to apply CMOS devices to millimeter-wave amplifier design. However, the power consumption of the system becomes higher in proportion to its target frequency. Moreover, CMOS devices are biased at a point where the device achieves the highest gain and consumes much power. In order to reduce the power consumption without any compromise, we introduce two types of indicator. One works towards achieving the highest gain with the lowest power consumption. The other works towards achieving the highest linearity with consideration of the power consumption. In this work, we have shown the effectiveness of those indicators by applying measured data of the fabricated metal-oxide-semiconductor field-effect transistors (MOSFETs) to cascade common-source amplifiers.

  17. Method to determine the position-dependant metal correction factor for dose-rate equivalent laser testing of semiconductor devices

    DOEpatents

    Horn, Kevin M.

    2013-07-09

    A method reconstructs the charge collection from regions beneath opaque metallization of a semiconductor device, as determined from focused laser charge collection response images, and thereby derives a dose-rate dependent correction factor for subsequent broad-area, dose-rate equivalent, laser measurements. The position- and dose-rate dependencies of the charge-collection magnitude of the device are determined empirically and can be combined with a digital reconstruction methodology to derive an accurate metal-correction factor that permits subsequent absolute dose-rate response measurements to be derived from laser measurements alone. Broad-area laser dose-rate testing can thereby be used to accurately determine the peak transient current, dose-rate response of semiconductor devices to penetrating electron, gamma- and x-ray irradiation.

  18. The Effect of Dynamical Image Forces on The Transport Properties of Charge Carriers and Excitons in Metal-Semiconductor Nanostructures

    NASA Astrophysics Data System (ADS)

    Cherqui, Charles

    We examine coupled metal nanoparticle/semiconductor hybrid nano-stuctures and analyze the effect that the surface response metal nanoparticles (MNP) has on the transport properties of the system. This analysis is accomplished by treating surface plasmons as quantum oscillators. We find that charge carriers traveling in the nearby semiconductors experience a repulsion due to the ground state energy of the quantum SP (QSP). This effect is shown to be the quantum analogue of the ponderomotive effect found in plasma physics. We then extend the theory to examine the transport properties of carbon nano-tube excitons in the presence of localized SPs and show that this system maps onto a Fano-Anderson Hamiltonian. Through numerical simulation, we show that the emission patterns of the system are severely modified by the presence of localized surface plasmons.

  19. A study into the role of surface capping on energy transfer in metal cluster-semiconductor nanocomposites

    NASA Astrophysics Data System (ADS)

    Bain, Dipankar; Paramanik, Bipattaran; Sadhu, Suparna; Patra, Amitava

    2015-12-01

    Metal cluster-semiconductor nanocomposite materials remain a frontier area of research for the development of optoelectronic, photovoltaic and light harvesting devices because metal nanoclusters and semiconductor QDs are promising candidates for photon harvesting. Here, we have designed well defined metal cluster-semiconductor nanostructures using different surface capped negatively charged Au25 nanoclusters (Au NCs) and positively charged cysteamine capped CdTe quantum dots using electrostatic interactions. The main focus of this article is to address the impact of surface capping agents on the photophysical properties of Au cluster-CdTe QD hybrid nanocomposites. Steady state and time resolved spectroscopic studies reveal that photoluminescence quenching, radiative and nonradiative rate, and energy transfer between Au nanoclusters and CdTe QDs have been influenced by the nature of the capping agent. We have calculated the energy transfer related parameters such as the overlap integral, distance between donor and acceptor, Förster distance, efficiency of energy transfer and rate of energy transfer from CdTe QDs to three different Au NCs. Photoluminescence quenching varies from 73% to 43% when changing the capping agents from bovine serum albumin (BSA) to glutathione (GSH). The efficiency of the energy transfer from CdTe QDs to BSA-capped Au NCs is found to be 83%, for Cys-capped Au NCs it was 46% and for GSH-capped Au NCs it was 35%. The efficiency depends on the number of Au clusters attached per QD. This reveals that the nature of capping ligands plays a crucial role in the energy transfer phenomena from CdTe QDs to Au NCs. Interesting findings reveal that the efficient energy transfer in metal cluster-semiconductor nanocomposites may open up new possibilities in designing artificial light harvesting systems for future applications.Metal cluster-semiconductor nanocomposite materials remain a frontier area of research for the development of optoelectronic

  20. Large anomalous Hall effect in a silicon-based magnetic semiconductor.

    PubMed

    Manyala, Ncholu; Sidis, Yvan; DiTusa, John F; Aeppli, Gabriel; Young, David P; Fisk, Zachary

    2004-04-01

    Magnetic semiconductors are attracting great interest because of their potential use for spintronics, a new technology that merges electronics with the manipulation of conduction electron spins. (GaMn)As and (GaMn)N have recently emerged as the most popular materials for this new technology, and although their Curie temperatures are rising towards room temperature, these materials can only be fabricated in thin-film form, are heavily defective, and are not obviously compatible with Si. We show here that it is productive to consider transition metal monosilicides as potential alternatives. In particular, we report the discovery that the bulk metallic magnets derived from doping the narrow-gap insulator FeSi with Co share the very high anomalous Hall conductance of (GaMn)As, while displaying Curie temperatures as high as 53 K. Our work opens up a new arena for spintronics, involving a bulk material based only on transition metals and Si, which displays large magnetic-field effects on its electrical properties.

  1. Electroluminescence from metal-oxide-semiconductor devices with erbium-doped CeO{sub 2} films on silicon

    SciTech Connect

    Lv, Chunyan; Zhu, Chen; Wang, Canxing; Gao, Yuhan; Ma, Xiangyang Yang, Deren

    2015-04-06

    We report on erbium (Er)-related electroluminescence (EL) in the visible and near-infrared (NIR) from metal-oxide-semiconductor (MOS) devices with Er-doped CeO{sub 2} (CeO{sub 2}:Er) films on silicon. The onset voltage of such EL under either forward or reverse bias is smaller than 10 V. Moreover, the EL quenching can be avoidable for the CeO{sub 2}:Er-based MOS devices. Analysis on the current-voltage characteristic of the device indicates that the electron transportation at the EL-enabling voltages under either forward or reverse bias is dominated by trap-assisted tunneling mechanism. Namely, electrons in n{sup +}-Si/ITO can tunnel into the conduction band of CeO{sub 2} host via defect states at sufficiently high forward/reverse bias voltages. Then, a fraction of such electrons are accelerated by electric field to become hot electrons, which impact-excite the Er{sup 3+} ions, thus leading to characteristic emissions. It is believed that this work has laid the foundation for developing viable silicon-based emitters using CeO{sub 2}:Er films.

  2. Centroid shift of. gamma. rays from positron annihilation in the depletion region of metal-oxide-semiconductor structures

    SciTech Connect

    Leung, T.C.; Kong, Y.; Lynn, K.G.; Nielsen, B. ); Weinberg, Z.A.; Rubloff, G.W. )

    1991-01-07

    Using metal-oxide-semiconductor (MOS) structures, the shift of centroid (peak) of {gamma}-ray energy distributions emitted from positron annihilation has been measured as a function of incident positron energy. The Doppler centroid shift was found to be consistent with the positron motion in the MOS depletion region. The results are described by a one-dimensional positron diffusion model, and provide information on effective'' positron diffusion length under applied field.

  3. Heteroepitaxial growth of 3-5 semiconductor compounds by metal-organic chemical vapor deposition for device applications

    NASA Technical Reports Server (NTRS)

    Collis, Ward J.; Abul-Fadl, Ali

    1988-01-01

    The purpose of this research is to design, install and operate a metal-organic chemical vapor deposition system which is to be used for the epitaxial growth of 3-5 semiconductor binary compounds, and ternary and quaternary alloys. The long-term goal is to utilize this vapor phase deposition in conjunction with existing current controlled liquid phase epitaxy facilities to perform hybrid growth sequences for fabricating integrated optoelectronic devices.

  4. Highly stable and imperceptible electronics utilizing photoactivated heterogeneous sol-gel metal-oxide dielectrics and semiconductors.

    PubMed

    Jo, Jeong-Wan; Kim, Jaekyun; Kim, Kyung-Tae; Kang, Jin-Gu; Kim, Myung-Gil; Kim, Kwang-Ho; Ko, Hyungduk; Kim, Jiwan; Kim, Yong-Hoon; Park, Sung Kyu

    2015-02-18

    Incorporation of Zr into an AlOx matrix generates an intrinsically activated ZAO surface enabling the formation of a stable semiconducting IGZO film and good interfacial properties. Photochemically annealed metal-oxide devices and circuits with the optimized sol-gel ZAO dielectric and IGZO semiconductor layers demonstrate the high performance and electrically/mechanically stable operation of flexible electronics fabricated via a low-temperature solution process.

  5. A study into the role of surface capping on energy transfer in metal cluster-semiconductor nanocomposites.

    PubMed

    Bain, Dipankar; Paramanik, Bipattaran; Sadhu, Suparna; Patra, Amitava

    2015-12-28

    Metal cluster-semiconductor nanocomposite materials remain a frontier area of research for the development of optoelectronic, photovoltaic and light harvesting devices because metal nanoclusters and semiconductor QDs are promising candidates for photon harvesting. Here, we have designed well defined metal cluster-semiconductor nanostructures using different surface capped negatively charged Au25 nanoclusters (Au NCs) and positively charged cysteamine capped CdTe quantum dots using electrostatic interactions. The main focus of this article is to address the impact of surface capping agents on the photophysical properties of Au cluster-CdTe QD hybrid nanocomposites. Steady state and time resolved spectroscopic studies reveal that photoluminescence quenching, radiative and nonradiative rate, and energy transfer between Au nanoclusters and CdTe QDs have been influenced by the nature of the capping agent. We have calculated the energy transfer related parameters such as the overlap integral, distance between donor and acceptor, Förster distance, efficiency of energy transfer and rate of energy transfer from CdTe QDs to three different Au NCs. Photoluminescence quenching varies from 73% to 43% when changing the capping agents from bovine serum albumin (BSA) to glutathione (GSH). The efficiency of the energy transfer from CdTe QDs to BSA-capped Au NCs is found to be 83%, for Cys-capped Au NCs it was 46% and for GSH-capped Au NCs it was 35%. The efficiency depends on the number of Au clusters attached per QD. This reveals that the nature of capping ligands plays a crucial role in the energy transfer phenomena from CdTe QDs to Au NCs. Interesting findings reveal that the efficient energy transfer in metal cluster-semiconductor nanocomposites may open up new possibilities in designing artificial light harvesting systems for future applications.

  6. Scanning internal-photoemission microscopy: An imaging technique to reveal microscopic inhomogeneity at metal-semiconductor interfaces

    SciTech Connect

    Okumura, Tsugunori

    1996-12-01

    We have developed scanning internal-photoemission microscopy (SIPM) which is capable of imaging Schottky-barrier distribution at {open_quotes}buried{close_quotes} metal-semiconductor interfaces. By using this technique, inhomogeneous reaction at annealed interfaces of Ti/Pt/Au/GaAs and epitaxial-Al/Si(111) systems has been studied in relation to their microscopic as well as macroscopic electrical properties.

  7. Effects of oxide thickness on charge trapping in metal-nitride-oxide- semiconductor structures

    NASA Astrophysics Data System (ADS)

    Kapoor, Vikram J.; Delatore, James P.

    1982-07-01

    Charge trapping in chemically vapor-deposited Si3N4 thin films of metal-nitride-oxide- semiconductor (MNOS) structures has been studied using the internal photoelectric-effect technique in combination with high-frequency capacitance-voltage measurements. The trapped charge density in the Si3N4 film was investigated as a function of the experimental parameters of the internal photoelectric-effect technique and the oxide thickness (300-20 Å) of the MNOS structure. The optimum trapped electron density in the Si3N4 film was measured to be 1.5×1018/ cm3 using 4.14-eV photon energy, 3.0-mW/cm2 light intensity, and -20-V applied gate voltage bias for the MNOS structures whose oxide thicknesses were greater than 70 Å. The photoinjection of holes from Si into Si3N4 was inhibited in thick-oxide (300-43 Å) MNOS structures due to the large barrier height at the Si-SiO2 interface. This eliminated simultaneous trapping of holes and electrons in the Si3N4 film. As the oxide thickness of the MNOS structure was reduced below the critical thickness of 43 Å, the photoinjection of holes from Si into Si3N4 was enhanced substantially with subsequent dominant hole trapping in the Si3N4 film.

  8. Electrosprayed Metal Oxide Semiconductor Films for Sensitive and Selective Detection of Hydrogen Sulfide

    PubMed Central

    Ghimbeu, Camelia Matei; Lumbreras, Martine; Schoonman, Joop; Siadat, Maryam

    2009-01-01

    Semiconductor metal oxide films of copper-doped tin oxide (Cu-SnO2), tungsten oxide (WO3) and indium oxide (In2O3) were deposited on a platinum coated alumina substrate employing the electrostatic spray deposition technique (ESD). The morphology studied with scanning electron microscopy (SEM) and atomic force microscopy (AFM) shows porous homogeneous films comprising uniformly distributed aggregates of nano particles. The X-ray diffraction technique (XRD) proves the formation of crystalline phases with no impurities. Besides, the Raman cartographies provided information about the structural homogeneity. Some of the films are highly sensitive to low concentrations of H2S (10 ppm) at low operating temperatures (100 and 200 °C) and the best response in terms of Rair/Rgas is given by Cu-SnO2 films (2500) followed by WO3 (1200) and In2O3 (75). Moreover, all the films exhibit no cross-sensitivity to other reducing (SO2) or oxidizing (NO2) gases. PMID:22291557

  9. Study of SiO[sub 2]-Si and metal-oxide-semiconductor structures using positrons

    SciTech Connect

    Leung, T.C.; Asoka-Kumar, P.; Nielsen, B.; Lynn, K.G. )

    1993-01-01

    Studies of SiO[sub 2]-Si and metal-oxide-semiconductor (MOS) structures using positrons are summarized and a concise picture of the present understanding of positrons in these systems is provided. Positron annihilation line-shape [ital S] data are presented as a function of the positron incident energy, gate voltage, and annealing, and are described with a diffusion-annihilation equation for positrons. The data are compared with electrical measurements. Distinct annihilation characteristics were observed at the SiO[sub 2]-Si interface and have been studied as a function of bias voltage and annealing conditions. The shift of the centroid (peak) of [gamma]-ray energy distributions in the depletion region of the MOS structures was studied as a function of positron energy and gate voltage, and the shifts are explained by the corresponding variations in the strength of the electric field and thickness of the depletion layer. The potential role of the positron annihilation technique as a noncontact, nondestructive, and depth-sensitive characterization tool for the technologically important, deeply buried interface is shown.

  10. Laser Doppler blood flow complementary metal oxide semiconductor imaging sensor with analog on-chip processing.

    PubMed

    Gu, Quan; Hayes-Gill, Barrie R; Morgan, Stephen P

    2008-04-20

    A 4 x 4 pixel array with analog on-chip processing has been fabricated within a 0.35 mum complementary metal oxide semiconductor process as a prototype sensor for laser Doppler blood flow imaging. At each pixel the bandpass and frequency weighted filters necessary for processing laser Doppler blood flow signals have been designed and fabricated. Because of the space constraints of implementing an accurate omega(0.5) filter at the pixel level, this has been approximated using the "roll off" of a high-pass filter with a cutoff frequency set at 10 kHz. The sensor has been characterized using a modulated laser source. Fixed pattern noise is present that is demonstrated to be repeatable across the array and can be calibrated. Preliminary blood flow results on a finger before and after occlusion demonstrate that the sensor array provides the potential for a system that can be scaled to a larger number of pixels for blood flow imaging.

  11. Metal oxide semiconductors for dye- and quantum-dot-sensitized solar cells.

    PubMed

    Concina, Isabella; Vomiero, Alberto

    2015-04-17

    This Review provides a brief summary of the most recent research developments in the synthesis and application of nanostructured metal oxide semiconductors for dye sensitized and quantum dot sensitized solar cells. In these devices, the wide bandgap semiconducting oxide acts as the photoanode, which provides the scaffold for light harvesters (either dye molecules or quantum dots) and electron collection. For this reason, proper tailoring of the optical and electronic properties of the photoanode can significantly boost the functionalities of the operating device. Optimization of the functional properties relies with modulation of the shape and structure of the photoanode, as well as on application of different materials (TiO2, ZnO, SnO2) and/or composite systems, which allow fine tuning of electronic band structure. This aspect is critical because it determines exciton and charge dynamics in the photoelectrochemical system and is strictly connected to the photoconversion efficiency of the solar cell. The different strategies for increasing light harvesting and charge collection, inhibiting charge losses due to recombination phenomena, are reviewed thoroughly, highlighting the benefits of proper photoanode preparation, and its crucial role in the development of high efficiency dye sensitized and quantum dot sensitized solar cells.

  12. Electrosprayed metal oxide semiconductor films for sensitive and selective detection of hydrogen sulfide.

    PubMed

    Ghimbeu, Camelia Matei; Lumbreras, Martine; Schoonman, Joop; Siadat, Maryam

    2009-01-01

    Semiconductor metal oxide films of copper-doped tin oxide (Cu-SnO(2)), tungsten oxide (WO(3)) and indium oxide (In(2)O(3)) were deposited on a platinum coated alumina substrate employing the electrostatic spray deposition technique (ESD). The morphology studied with scanning electron microscopy (SEM) and atomic force microscopy (AFM) shows porous homogeneous films comprising uniformly distributed aggregates of nano particles. The X-ray diffraction technique (XRD) proves the formation of crystalline phases with no impurities. Besides, the Raman cartographies provided information about the structural homogeneity. Some of the films are highly sensitive to low concentrations of H(2)S (10 ppm) at low operating temperatures (100 and 200 °C) and the best response in terms of R(air)/R(gas) is given by Cu-SnO(2) films (2500) followed by WO(3) (1200) and In(2)O(3) (75). Moreover, all the films exhibit no cross-sensitivity to other reducing (SO(2)) or oxidizing (NO(2)) gases.

  13. Laser Doppler blood flow complementary metal oxide semiconductor imaging sensor with analog on-chip processing

    SciTech Connect

    Gu Quan; Hayes-Gill, Barrie R.; Morgan, Stephen P

    2008-04-20

    A 4x4 pixel array with analog on-chip processing has been fabricated within a 0.35 {mu}m complementary metal oxide semiconductor process as a prototype sensor for laser Doppler blood flow imaging. At each pixel the bandpass and frequency weighted filters necessary for processing laser Doppler blood flow signals have been designed and fabricated. Because of the space constraints of implementing an accurate {omega}{sup 0.5} filter at the pixel level, this has been approximated using the ''roll off'' of a high-pass filter with a cutoff frequency set at 10 kHz. The sensor has been characterized using a modulated laser source. Fixed pattern noise is present that is demonstrated to be repeatable across the array and can be calibrated. Preliminary blood flow results on a finger before and after occlusion demonstrate that the sensor array provides the potential for a system that can be scaled to a larger number of pixels for blood flow imaging.

  14. Polycrystalline silicon ring resonator photodiodes in a bulk complementary metal-oxide-semiconductor process.

    PubMed

    Mehta, Karan K; Orcutt, Jason S; Shainline, Jeffrey M; Tehar-Zahav, Ofer; Sternberg, Zvi; Meade, Roy; Popović, Miloš A; Ram, Rajeev J

    2014-02-15

    We present measurements on resonant photodetectors utilizing sub-bandgap absorption in polycrystalline silicon ring resonators, in which light is localized in the intrinsic region of a p+/p/i/n/n+ diode. The devices, operating both at λ=1280 and λ=1550  nm and fabricated in a complementary metal-oxide-semiconductor (CMOS) dynamic random-access memory emulation process, exhibit detection quantum efficiencies around 20% and few-gigahertz response bandwidths. We observe this performance at low reverse biases in the range of a few volts and in devices with dark currents below 50 pA at 10 V. These results demonstrate that such photodetector behavior, previously reported by Preston et al. [Opt. Lett. 36, 52 (2011)], is achievable in bulk CMOS processes, with significant improvements with respect to the previous work in quantum efficiency, dark current, linearity, bandwidth, and operating bias due to additional midlevel doping implants and different material deposition. The present work thus offers a robust realization of a fully CMOS-fabricated all-silicon photodetector functional across a wide wavelength range.

  15. Ultra-compact silicon photonic devices reconfigured by an optically induced semiconductor-to-metal transition.

    PubMed

    Ryckman, Judson D; Hallman, Kent A; Marvel, Robert E; Haglund, Richard F; Weiss, Sharon M

    2013-05-06

    Vanadium dioxide (VO(2)) is a promising reconfigurable optical material and has long been a focus of condensed matter research owing to its distinctive semiconductor-to-metal phase transition (SMT), a feature that has stimulated recent development of thermally reconfigurable photonic, plasmonic, and metamaterial structures. Here, we integrate VO(2) onto silicon photonic devices and demonstrate all-optical switching and reconfiguration of ultra-compact broadband Si-VO(2) absorption modulators (L < 1 μm) and ring-resonators (R ~ λ(0)). Optically inducing the SMT in a small, ~0.275 μm(2), active area of polycrystalline VO(2) enables Si-VO(2) structures to achieve record values of absorption modulation, ~4 dB μm(-1), and intracavity phase modulation, ~π/5 rad μm(-1). This in turn yields large, tunable changes to resonant wavelength, |Δλ(SMT)| ~ 3 nm, approximately 60 times larger than Si-only control devices, and enables reconfigurable filtering and optical modulation in excess of 7 dB from modest Q-factor (~10(3)), high-bandwidth ring resonators (>100 GHz). All-optical integrated Si-VO(2) devices thus constitute platforms for reconfigurable photonics, bringing new opportunities to realize dynamic on-chip networks and ultrafast optical shutters and modulators.

  16. AlN/GaN Metal Insulator Semiconductor Field Effect Transistor on Sapphire Substrate

    NASA Astrophysics Data System (ADS)

    Seo, Sanghyun; Ghose, Kaustav; Zhao, Guang Yuan; Pavlidis, Dimitris

    AlN/GaN Metal Insulator Semiconductor Field Effect Transistors (MISFETs) were designed, simulated and fabricated. DC, S-parameter and power measurements were also performed. Drift-diffusion simulations using DESSIS compared AlN/GaN MISFETs and Al32Ga68N/GaN Heterostructure FETs (HFETs) with the same geometries. The simulation results show the advantages of AlN/GaN MISFETs in terms of higher saturation current, lower gate leakage and higher transconductance than AlGaN/GaN HFETs. First results from fabricated AlN/GaN devices with 1μm gate length and 200μm gate width showed a maximum drain current density of ˜380mA/mm and a peak extrinsic transconductance of 85mS/mm. S-parameter measurements showed that currentgain cutoff frequency (fT) and maximum oscillation frequency (fmax) were 5.85GHz and 10.57GHz, respectively. Power characteristics were measured at 2GHz and showed output power density of 850mW/mm with 23.8% PAE at VDS=15V. To the authors knowledge this is the first report of a systematic study of AlN/GaN MISFETs addressing their physical modeling and experimental high-frequency characteristics including the power performance.

  17. Photoresponse of an Organic Semiconductor/Two-dimensional Transition Metal Dichalcogenide Heterojunction.

    PubMed

    Liu, Xiao; Gu, Jie; Ding, Kan; Fan, Dejiu; Hu, Xiaoer; Tseng, Yu-Wen; Lee, Yi-Hsien; Menon, Vinod M; Forrest, Stephen R

    2017-04-07

    We study the optoelectronic properties of a type-II heterojunction (HJ) comprising a monolayer of the transition metal dichalcogenide (TMDC), WS2, and a thin film of the organic semiconductor, 3, 4, 9, 10-perylene tetracarboxylic dianhydride (PTCDA). Both theoretical and experimental investigations of the HJ indicate that Frenkel states in the organic layer and two dimensional Wannier-Mott states in the TMDC dissociate to form hybrid charge transfer excitons (HCTEs) at the interface that subsequently dissociate into free charges that are collected at opposing electrodes. A photodiode employing the HJ achieves a peak external quantum efficiency of 1.8 ± 0.2 % at a wavelength of 430 ± 10 nm, corresponding to an internal quantum efficiency (IQE) as high as 11 ± 1 % in these ultrathin devices. The photoluminescence spectra of PTCDA and PTCDA/WS2 thin films show that excitons in the WS2 have a quenching rate that is approximately seven times higher than in PTCDA. This difference leads to strong wavelength dependence in IQE.

  18. Metal-Ferroelectric-Semiconductor Field-Effect Transistor NAND Gate Switching Time Analysis

    NASA Technical Reports Server (NTRS)

    Phillips, Thomas A.; Macleod, Todd C.; Ho, Fat D.

    2006-01-01

    Previous research investigated the modeling of a N Wga te constructed of Metal-Ferroelectric- Semiconductor Field-Effect Transistors (MFSFETs) to obtain voltage transfer curves. The NAND gate was modeled using n-channel MFSFETs with positive polarization for the standard CMOS n-channel transistors and n-channel MFSFETs with negative polarization for the standard CMOS p-channel transistors. This paper investigates the MFSFET NAND gate switching time propagation delay, which is one of the other important parameters required to characterize the performance of a logic gate. Initially, the switching time of an inverter circuit was analyzed. The low-to-high and high-to-low propagation time delays were calculated. During the low-to-high transition, the negatively polarized transistor pulls up the output voltage, and during the high-to-low transition, the positively polarized transistor pulls down the output voltage. The MFSFETs were simulated by using a previously developed model which utilized a partitioned ferroelectric layer. Then the switching time of a 2-input NAND gate was analyzed similarly to the inverter gate. Extension of this technique to more complicated logic gates using MFSFETs will be studied.

  19. Modeling of a Metal-Ferroelectric-Semiconductor Field-Effect Transistor NAND Gate

    NASA Technical Reports Server (NTRS)

    Phillips, Thomas A.; MacLeod, Todd C.; Ho, Fat Duen

    2005-01-01

    Considerable research has been performed by several organizations in the use of the Metal- Ferroelectric-Semiconductor Field-Effect Transistors (MFSFET) in memory circuits. However, research has been limited in expanding the use of the MFSFET to other electronic circuits. This research project investigates the modeling of a NAND gate constructed from MFSFETs. The NAND gate is one of the fundamental building blocks of digital electronic circuits. The first step in forming a NAND gate is to develop an inverter circuit. The inverter circuit was modeled similar to a standard CMOS inverter. A n-channel MFSFET with positive polarization was used for the n-channel transistor, and a n-channel MFSFET with negative polarization was used for the p-channel transistor. The MFSFETs were simulated by using a previously developed current model which utilized a partitioned ferroelectric layer. The inverter voltage transfer curve was obtained over a standard input of zero to five volts. Then a 2-input NAND gate was modeled similar to the inverter circuit. Voltage transfer curves were obtained for the NAND gate for various configurations of input voltages. The resultant data shows that it is feasible to construct a NAND gate with MFSFET transistors.

  20. Fluoride dielectric films on InP for metal-insulator-semiconductor applications

    NASA Astrophysics Data System (ADS)

    Paul, T. K.; Bose, D. N.

    1990-04-01

    This paper describes the characteristics of thin fluoride films on InP which are used as dielectric for metal-insulator-semiconductor (MIS) devices. Films of Ba1-xSrxF2 (x=0.0, 0.5, 0.83, and 1.0) were deposited by sublimation of mixtures of BaF2 and SrF2 in vacuum under 10-5 Torr pressure. The composition of the films was deduced from x-ray diffraction and energy dispersion analysis by x-ray studies. The electrical activation energies of the films determined between 120 and 300 K were found to be 3.5-22.0×10-3 eV , depending on composition and temperature. The resistivity of the films was in the range of 5.0×1011 to 5.0×1012 Ω cm with the breakdown fields greater than 5.0×105 V cm-1 . The interface state density obtained was as low as 5×1010 cm-2 eV-1 with annealed BaF2 films. Scanning electron microscope studies showed that annealing caused development of cracks resulting in decreased film resistivity. Auger studies gave evidence of broadening of the interface and outdiffusion from the substrate due to annealing.

  1. Diamond logic inverter with enhancement-mode metal-insulator-semiconductor field effect transistor

    SciTech Connect

    Liu, J. W.; Liao, M. Y.; Imura, M.; Watanabe, E.; Oosato, H.; Koide, Y.

    2014-08-25

    A diamond logic inverter is demonstrated using an enhancement-mode hydrogenated-diamond metal-insulator-semiconductor field effect transistor (MISFET) coupled with a load resistor. The gate insulator has a bilayer structure of a sputtering-deposited LaAlO{sub 3} layer and a thin atomic-layer-deposited Al{sub 2}O{sub 3} buffer layer. The source-drain current maximum, extrinsic transconductance, and threshold voltage of the MISFET are measured to be −40.7 mA·mm{sup −1}, 13.2 ± 0.1 mS·mm{sup −1}, and −3.1 ± 0.1 V, respectively. The logic inverters show distinct inversion (NOT-gate) characteristics for input voltages ranging from 4.0 to −10.0 V. With increasing the load resistance, the gain of the logic inverter increases from 5.6 to as large as 19.4. The pulse response against the high and low input voltages shows the inversion response with the low and high output voltages.

  2. Infrared rectification in a nanoantenna-coupled metal-oxide-semiconductor tunnel diode.

    PubMed

    Davids, Paul S; Jarecki, Robert L; Starbuck, Andrew; Burckel, D Bruce; Kadlec, Emil A; Ribaudo, Troy; Shaner, Eric A; Peters, David W

    2015-12-01

    Direct rectification of electromagnetic radiation is a well-established method for wireless power conversion in the microwave region of the spectrum, for which conversion efficiencies in excess of 84% have been demonstrated. Scaling to the infrared or optical part of the spectrum requires ultrafast rectification that can only be obtained by direct tunnelling. Many research groups have looked to plasmonics to overcome antenna-scaling limits and to increase the confinement. Recently, surface plasmons on heavily doped Si surfaces were investigated as a way of extending surface-mode confinement to the thermal infrared region. Here we combine a nanostructured metallic surface with a heavily doped Si infrared-reflective ground plane designed to confine infrared radiation in an active electronic direct-conversion device. The interplay of strong infrared photon-phonon coupling and electromagnetic confinement in nanoscale devices is demonstrated to have a large impact on ultrafast electronic tunnelling in metal-oxide-semiconductor (MOS) structures. Infrared dispersion of SiO2 near a longitudinal optical (LO) phonon mode gives large transverse-field confinement in a nanometre-scale oxide-tunnel gap as the wavelength-dependent permittivity changes from 1 to 0, which leads to enhanced electromagnetic fields at material interfaces and a rectified displacement current that provides a direct conversion of infrared radiation into electric current. The spectral and electrical signatures of the nanoantenna-coupled tunnel diodes are examined under broadband blackbody and quantum-cascade laser (QCL) illumination. In the region near the LO phonon resonance, we obtained a measured photoresponsivity of 2.7 mA W(-1) cm(-2) at -0.1 V.

  3. Hybrid photovoltaic junctions: metal/molecular organic insulator/semiconductor MOIS solar cells

    NASA Astrophysics Data System (ADS)

    Har-Lavan, Rotem; Ron, Izhar; Thieblemont, Florent; Cahen, David

    2008-04-01

    Using a dense organic monolayer, self-assembled and directly bound to n-Si, as high quality insulator with a thickness that can be varied from 1.5-2.5 nm, we construct a Metal-Organic Insulator-Semiconductor (MOIS) structure, which, if fabricated with semi-transparent top electrode, performs as a hybrid organic-inorganic photovoltaic device. The feasibility of the concept and the electrical properties of the insulating layer were first shown with a Hg top electrode, allowing use of prior know-how from electron transport through molecular monolayers, but with photon collection only from around the electrode. We then used another bottom-up fabrication technique, in addition to molecular self-assembly, electro-less metal deposition, to implement an all-covalently bound solid state device. Electro-less Au deposition yields an electrically continuous, porous and semi-transparent top electrode, improving photon harvesting. Aside from being a nearly ideal insulator, the monolayer acts to passivate and protect the interfacial Si layer from defects and to decrease the surface state density. In addition the cell, like any MIS solar cell, benefits from that the light needs only to cross a few thin transparent layers (anti-reflective coating, organic insulator) to reach the photovoltaically active cell part. This helps to generate carriers close to the junction area, even by short wavelength photons, and, thus, to increase light collection, compared to p-n junction solar cells. Due to low temperature cell fabrication without high vacuum steps, the MOIS approach might be interesting for low cost solar cells.

  4. Cross-plane electrical and thermal transport in oxide metal/semiconductor superlattices

    NASA Astrophysics Data System (ADS)

    Jha, Pankaj

    Perovskite oxides display a rich variety of electronic properties as metals, ferroelectrics, ferromagnetics, multiferroics, and thermoelectrics. Cross-plane electron filtering transport in metal/semiconductor superlattices provides a potential approach to increase the thermoelectric figure of merit (ZT). La0.67Sr0.33MnO3 (LSMO) and LaMnO3 (LMO) thin-film depositions were optimized using pulsed laser deposition (PLD) to achieve low resistivity constituent materials for LSMO/LMO superlattice heterostructures on (100)-strontium titanate (STO) substrates. X-ray diffraction and high-resolution reciprocal space mapping (RSM) indicate that the superlattices are epitaxial and pseudomorphic. Cross-plane devices were fabricated by etching cylindrical pillar structures in superlattices using inductively-coupled-plasma reactive-ion etching. The cross-plane electrical conductivity data for LSMO/LMO superlattices reveal an effective barrier height of 220 meV. The cross-plane LSMO/LMO superlattices showed a giant Seebeck coefficient of 2560 microV/K at 300K that increases to 16640 microV/K at 360K. The large Seebeck coefficient may arise due to hot electron and spin filtering as LSMO/LMO superlattice constituent materials exhibit spintronic properties where charges and spin current are intertwined and can generate a spin-Seebeck effect. The room temperature thermal conductivity achieved in low resistivity superlattices was 0.92 W/mK, which indicates that cross-plane phonon scattering at interfaces reduces the lattice contribution to the thermal conductivity. The giant contribution of spin-Seebeck, the large temperature dependence of the cross-plane power factor, and the low thermal conductivity in low resistance LSMO/LMO superlattices may offer opportunities to realize spin-magnetic thermoelectric devices, and suggests a direction for further investigations of the potential of LSMO/LMO oxide superlattices for thermoelectric devices.

  5. Bismuth-based oxide semiconductors: Mild synthesis and practical applications

    NASA Astrophysics Data System (ADS)

    Timmaji, Hari Krishna

    In this dissertation study, bismuth based oxide semiconductors were prepared using 'mild' synthesis techniques---electrodeposition and solution combustion synthesis. Potential environmental remediation and solar energy applications of the prepared oxides were evaluated. Bismuth vanadate (BiVO4) was prepared by electrodeposition and solution combustion synthesis. A two step electrosynthesis strategy was developed and demonstrated for the first time. In the first step, a Bi film was first electrodeposited on a Pt substrate from an acidic BiCl3 medium. Then, this film was anodically stripped in a medium containing hydrolyzed vanadium precursor, to generate Bi3+, and subsequent BiVO4 formation by in situ precipitation. The photoelectrochemical data were consistent with the in situ formation of n-type semiconductor films. In the solution combustion synthesis procedure, BiVO4 powders were prepared using bismuth nitrate pentahydrate as the bismuth precursor and either vanadium chloride or vanadium oxysulfate as the vanadium precursor. Urea, glycine, or citric acid was used as the fuel. The effect of the vanadium precursor on the photocatalytic activity of combustion synthesized BiVO 4 was evaluated in this study. Methyl orange was used as a probe to test the photocatalytic attributes of the combustion synthesized (CS) samples, and benchmarked against a commercial bismuth vanadate sample. The CS samples showed superior activity to the commercial benchmark sample, and samples derived from vanadium chloride were superior to vanadium oxysulfate counterparts. The photoelectrochemical properties of the various CS samples were also studied and these samples were shown to be useful both for environmental photocatalytic remediation and water photooxidation applications. Silver bismuth tungstate (AgBiW2O8) nanoparticles were prepared for the first time by solution combustion synthesis by using silver nitrate, bismuth nitrate, sodium tungstate as precursors for Ag, Bi, and W

  6. Metal-semiconductor-transition observed in Bi2Ca(Sr, Ba)2Co2O8+δ single crystals

    NASA Astrophysics Data System (ADS)

    Dong, Song-Tao; Zhang, Bin-Bin; Zhang, Lun-Yong; Chen, Y. B.; Yao, Shu-Hua; Zhou, Jian; Zhang, Shan-Tao; Gu, Zheng-Bin; Chen, Yan-Feng

    2014-07-01

    Electrical property evolution of Bi2AE2Co2O8+δ single crystals (AE = Ca, Sr and Ba) is systematically explored. When AE changes from Ca to Ba, the electrical property of Bi2Ca2Co2O8+δ and Bi2Sr2Co2O8+δ demonstrates semiconductor-like properties. But Bi2Ba2Co2O8+δ shows the metallic behavior. Analysis of temperature-dependent resistance substantiates that from metallic Bi2Ba2Co2O8+δ to semiconductor-like Bi2Sr2Co2O8+δ can be attributed to Anderson localization. However the semiconductor behaviour of Bi2Sr2Co2O8+δ and Bi2Ca2Co2O8+δ is related to electronic correlations effect that is inferred by large negative magnetoresistance (˜70%). The theoretical electronic structures and valence X-ray photoemission spectroscopy substantiate that there is a relative large density of state around Fermi level in Bi2Ba2Co2O8+δ compared with other two compounds. It suggests that Bi2Ba2Co2O8+δ is more apt to be metal in this material system.

  7. Electrical and Optical Characterization of Nanowire based Semiconductor Devices

    NASA Astrophysics Data System (ADS)

    Ayvazian, Talin

    This research project is focused on a new strategy for the creation of nanowire based semiconductor devices. The main goal is to understand and optimize the electrical and optical properties of two types of nanoscale devices; in first type lithographically patterned nanowire electrodeposition (LPNE) method has been utilized to fabricate nanowire field effect transistors (NWFET) and second type involved the development of light emitting semiconductor nanowire arrays (NWLED). Field effect transistors (NWFETs) have been prepared from arrays of polycrystalline cadmium selenide (pc-CdSe) nanowires using a back gate configuration. pc-CdSe nanowires were fabricated using the lithographically patterned nanowire electrode- position (LPNE) process on SiO2 /Si substrates. After electrodeposition, pc-CdSe nanowires were thermally annealed at 300 °C x 4 h either with or without exposure to CdCl 2 in methanol a grain growth promoter. The influence of CdCl2 treatment was to increase the mean grain diameter as determined by X-ray diffraction pattern and to convert the crystal structure from cubic to wurtzite. Transfer characteristics showed an increase of the field effect mobility (mu eff) by an order of magnitude and increase of the Ion/I off ratio by a factor of 3-4. Light emitting devices (NW-LED) based on lithographically patterned pc-CdSe nanowire arrays have been investigated. Electroluminescence (EL) spectra of CdSe nanowires under various biases exhibited broad emission spectra centered at 750 nm close to the band gap of CdSe (1.7eV). To enhance the intensity of the emitted light and the external quantum efficiency (EQE), the distance between the contacts were reduced from 5 mum to less than 1 mum which increased the efficiency by an order of magnitude. Also, increasing the annealing temperature of nanowires from 300 °C x4 h to 450 This research project is focused on a new strategy for the creation of nanowire based semiconductor devices. The main goal is to understand

  8. Atomic origin of high-temperature electron trapping in metal-oxide-semiconductor devices

    SciTech Connect

    Shen, Xiao; Dhar, Sarit; Pantelides, Sokrates T.

    2015-04-06

    MOSFETs based on wide-band-gap semiconductors are suitable for operation at high temperature, at which additional atomic-scale processes that are benign at lower temperatures can get activated, resulting in device degradation. Recently, significant enhancement of electron trapping was observed under positive bias in SiC MOSFETs at temperatures higher than 150 °C. Here, we report first-principles calculations showing that the enhanced electron trapping is associated with thermally activated capturing of a second electron by an oxygen vacancy in SiO{sub 2} by which the vacancy transforms into a structure that comprises one Si dangling bond and a bond between a five-fold and a four-fold Si atoms. The results suggest a key role of oxygen vacancies and their structural reconfigurations in the reliability of high-temperature MOS devices.

  9. Progressive Design of Plasmonic Metal-Semiconductor Ensemble toward Regulated Charge Flow and Improved Vis-NIR-Driven Solar-to-Chemical Conversion.

    PubMed

    Han, Chuang; Quan, Quan; Chen, Hao Ming; Sun, Yugang; Xu, Yi-Jun

    2017-04-01

    Surface plasmon resonance (SPR)-mediated photocatalysis without the bandgap limitations of traditional semiconductor has aroused significant attention in solar-to-chemical energy conversion. However, the photocatalytic efficiency barely initiated by the SPR effects is still challenged by the low concentration and ineffective extraction of energetic hot electrons, slow charge migration rates, random charge diffusion directions, and the lack of highly active sites for redox reactions. Here, the tunable, progressive harvesting of visible-to-near infrared light (vis-NIR, λ > 570 nm) by designing plasmonic Au nanorods and metal (Au, Ag, or Pt) nanoparticle codecorated 1D CdS nanowire (1D CdS NW) ensemble is reported. The intimate integration of these metal nanostructures with 1D CdS NWs promotes the extraction and manipulated directional separation and migration of hot charge carriers in a more effective manner. Such cooperative synergy with tunable control of interfacial interaction, morphology optimization, and cocatalyst strategy results in the distinctly boosted performance for vis-NIR-driven plasmonic photocatalysis. This work highlights the significance of rationally progressive design of plasmonic metal-semiconductor-based composite system for boosting the regulated directional flow of hot charge carrier and thus the more efficient use of broad-spectrum solar energy conversion.

  10. Room temperature observation of single electron tunneling effect in self-assembled metal quantum dots on a semiconductor substrate

    NASA Astrophysics Data System (ADS)

    Park, Kang-Ho; Ha, Jeong Sook; Yun, Wan Soo; Shin, Mincheol; Park, Kyoung-Wan; Lee, El-Hang

    1997-09-01

    We report on the observation of room-temperature single electron tunneling phenomena in a metal-insulator-metal-semiconductor double-junction structure. The nanosized Ag dots were self-assembled on a Sb-terminated Si(100) surface, and the Coulomb gap and staircases were observed in the local current-voltage (I-V) measurements using scanning tunneling microscopy. The I-V characteristics exhibiting the single electron tunneling behavior vary significantly with the variation of the measurement position within the same Ag droplet. These phenomena are well described by the tip-dot(Ag)-Si double-junction picture.

  11. 3D assembly of semiconductor and metal nanocrystals: hybrid CdTe/Au structures with controlled content.

    PubMed

    Lesnyak, Vladimir; Wolf, André; Dubavik, Aliaksei; Borchardt, Lars; Voitekhovich, Sergei V; Gaponik, Nikolai; Kaskel, Stefan; Eychmüller, Alexander

    2011-08-31

    A 3D metal ion assisted assembly of nanoparticles has been developed. The approach relies on the efficient complexation of cadmium ions and 5-mercaptomethyltetrazole employed as the stabilizer of both colloidal CdTe and Au nanoparticles. It enables in a facile way the formation of hybrid metal-semiconductor 3D structures with controllable and tunable composition in aqueous media. By means of critical point drying, these assemblies form highly porous aerogels. The hybrid architectures obtained are characterized by electron microscopy, nitrogen adsorption, and optical spectroscopy methods.

  12. Accumulation of heavy metals and trace elements in fluvial sediments received effluents from traditional and semiconductor industries

    PubMed Central

    Hsu, Liang-Ching; Huang, Ching-Yi; Chuang, Yen-Hsun; Chen, Ho-Wen; Chan, Ya-Ting; Teah, Heng Yi; Chen, Tsan-Yao; Chang, Chiung-Fen; Liu, Yu-Ting; Tzou, Yu-Min

    2016-01-01

    Metal accumulation in sediments threatens adjacent ecosystems due to the potential of metal mobilization and the subsequent uptake into food webs. Here, contents of heavy metals (Cd, Cr, Cu, Ni, Pb, and Zn) and trace elements (Ga, In, Mo, and Se) were determined for river waters and bed sediments that received sewage discharged from traditional and semiconductor industries. We used principal component analysis (PCA) to determine the metal distribution in relation to environmental factors such as pH, EC, and organic matter (OM) contents in the river basin. While water PCA categorized discharged metals into three groups that implied potential origins of contamination, sediment PCA only indicated a correlation between metal accumulation and OM contents. Such discrepancy in metal distribution between river water and bed sediment highlighted the significance of physical-chemical properties of sediment, especially OM, in metal retention. Moreover, we used Se XANES as an example to test the species transformation during metal transportation from effluent outlets to bed sediments and found a portion of Se inventory shifted from less soluble elemental Se to the high soluble and toxic selenite and selenate. The consideration of environmental factors is required to develop pollution managements and assess environmental risks for bed sediments. PMID:27681994

  13. Accumulation of heavy metals and trace elements in fluvial sediments received effluents from traditional and semiconductor industries

    NASA Astrophysics Data System (ADS)

    Hsu, Liang-Ching; Huang, Ching-Yi; Chuang, Yen-Hsun; Chen, Ho-Wen; Chan, Ya-Ting; Teah, Heng Yi; Chen, Tsan-Yao; Chang, Chiung-Fen; Liu, Yu-Ting; Tzou, Yu-Min

    2016-09-01

    Metal accumulation in sediments threatens adjacent ecosystems due to the potential of metal mobilization and the subsequent uptake into food webs. Here, contents of heavy metals (Cd, Cr, Cu, Ni, Pb, and Zn) and trace elements (Ga, In, Mo, and Se) were determined for river waters and bed sediments that received sewage discharged from traditional and semiconductor industries. We used principal component analysis (PCA) to determine the metal distribution in relation to environmental factors such as pH, EC, and organic matter (OM) contents in the river basin. While water PCA categorized discharged metals into three groups that implied potential origins of contamination, sediment PCA only indicated a correlation between metal accumulation and OM contents. Such discrepancy in metal distribution between river water and bed sediment highlighted the significance of physical-chemical properties of sediment, especially OM, in metal retention. Moreover, we used Se XANES as an example to test the species transformation during metal transportation from effluent outlets to bed sediments and found a portion of Se inventory shifted from less soluble elemental Se to the high soluble and toxic selenite and selenate. The consideration of environmental factors is required to develop pollution managements and assess environmental risks for bed sediments.

  14. A Comprehensive Study on Mo/CdTe Metal-Semiconductor Interface Deposited by Radio Frequency Magnetron Sputtering.

    PubMed

    Dhar, N; Khan, N A; Chelvanathan, P; Akhtaruzzaman, M; Alam, M M; Alothman, Z A; Sopian, K; Amin, N

    2015-11-01

    Metal-semiconductor (MS) junction between Mo and CdTe, which is one of the fundamental issues for CdTe based solar cell, has been investigated for films deposited on different substrates. XRD pattern of Mo/CdTe films on the polyimide (PI) substrate shows a strong preferential orientation of MoTe2 in (100) at 2θ = 29.44 degrees, which becomes less apparent as deposition time of CdTe increases. However, on soda lime glass (SLG) no such XRD reflection pattern is observed. Moreover, from EDX measurement, Mo-Te compound also identifies MoTe2 at Mo/CdTe interface on PI substrate, which is not present on SLG. Bulk carrier concentration of Mo/CdTe films on PI substrate for lower deposition time of CdTe is found 1.42 x 10(18) cm(-3), which is almost equal to MoTe2. Thereafter, it decreases as CdTe growth time increases. The type of unintentionally formed MoTe2 on PI substrate is found to be n-type in nature. Lattice constants of a = 6.5 Å for CdTe and a = 3.52 Å for MoTe2 are found from nanostructure study by TEM.

  15. Functional integrity of flexible n-channel metal-oxide-semiconductor field-effect transistors on a reversibly bistable platform

    NASA Astrophysics Data System (ADS)

    Alfaraj, Nasir; Hussain, Aftab M.; Torres Sevilla, Galo A.; Ghoneim, Mohamed T.; Rojas, Jhonathan P.; Aljedaani, Abdulrahman B.; Hussain, Muhammad M.

    2015-10-01

    Flexibility can bring a new dimension to state-of-the-art electronics, such as rollable displays and integrated circuit systems being transformed into more powerful resources. Flexible electronics are typically hosted on polymeric substrates. Such substrates can be bent and rolled up, but cannot be independently fixed at the rigid perpendicular position necessary to realize rollable display-integrated gadgets and electronics. A reversibly bistable material can assume two stable states in a reversible way: flexibly rolled state and independently unbent state. Such materials are used in cycling and biking safety wristbands and a variety of ankle bracelets for orthopedic healthcare. They are often wrapped around an object with high impulsive force loading. Here, we study the effects of cumulative impulsive force loading on thinned (25 μm) flexible silicon-based n-channel metal-oxide-semiconductor field-effect transistor devices housed on a reversibly bistable flexible platform. We found that the transistors have maintained their high performance level up to an accumulated 180 kN of impact force loading. The gate dielectric layers have maintained their reliability, which is evidenced by the low leakage current densities. Also, we observed low variation in the effective electron mobility values, which manifests that the device channels have maintained their carrier transport properties.

  16. Theoretical Study of Triboelectric-Potential Gated/Driven Metal-Oxide-Semiconductor Field-Effect Transistor.

    PubMed

    Peng, Wenbo; Yu, Ruomeng; He, Yongning; Wang, Zhong Lin

    2016-04-26

    Triboelectric nanogenerator has drawn considerable attentions as a potential candidate for harvesting mechanical energies in our daily life. By utilizing the triboelectric potential generated through the coupling of contact electrification and electrostatic induction, the "tribotronics" has been introduced to tune/control the charge carrier transport behavior of silicon-based metal-oxide-semiconductor field-effect transistor (MOSFET). Here, we perform a theoretical study of the performances of tribotronic MOSFET gated by triboelectric potential in two working modes through finite element analysis. The drain-source current dependence on contact-electrification generated triboelectric charges, gap separation distance, and externally applied bias are investigated. The in-depth physical mechanism of the tribotronic MOSFET operations is thoroughly illustrated by calculating and analyzing the charge transfer process, voltage relationship to gap separation distance, and electric potential distribution. Moreover, a tribotronic MOSFET working concept is proposed, simulated and studied for performing self-powered FET and logic operations. This work provides a deep understanding of working mechanisms and design guidance of tribotronic MOSFET for potential applications in micro/nanoelectromechanical systems (MEMS/NEMS), human-machine interface, flexible electronics, and self-powered active sensors.

  17. Theory of B(2)O and BeB(2) nanotubes: new semiconductors and metals in one dimension.

    PubMed

    Zhang, Peihong; Crespi, Vincent H

    2002-07-29

    We describe two new boron-based nanotubes: B(2)O and BeB(2). Both are isoelectronic to graphite, have reasonable curvature energies, and have already been made in their bulk planar forms. The lowest energy allotrope of planar single-layer B(2)O is a semiconductor with a moderate band gap. The local density approximation band gap of the corresponding (3,0) B(2)O nanotube [similar in size to (9,0) carbon nanotube tube] is direct and around 1.6 eV, within a range inaccessible to previous C or BN nanotubes. Single-layer BeB(2) has a fascinating structure: the Be atoms rest above the boron hexagonal faces, nearly coplanar to the boron sheet. The unusual K-point pi-pi(*) Fermi-level degeneracy of graphite survives, while a new nearly pointlike Fermi surface appears at the M point. As a result, BeB(2) nanotubes are uniformly metallic.

  18. Proposal of Trench-Oxide Metal-Oxide-Semiconductor Structure and Computer Simulation of Silicon Quantum-Wire Characteristics

    NASA Astrophysics Data System (ADS)

    Tsukui, Tetsuya; Oda, Shunri

    1993-12-01

    We propose “trench-oxide metal-oxide-semiconductor (MOS)” structures as a novel formation method of silicon-based low-dimensional quantum structures, which are considered to be basic elements of future ultrahigh-speed and ultralarge-scale integrated devices. In this method, the applied gate voltage forms the potential well confined in an additional direction defined by ultrafine “trenches” on the oxide layer of the MOS structure. We characterize “trench-oxide MOS” quantum wire structures by two-dimensional numerical calculation of the shape of the potential well, the subband energy levels and the electron density, and investigate the possibility of the experimental observation of quantized density of states peculiar to quantum wires, by measuring capacitance-gate voltage (C-V) characteristics of “trench-oxide MOS capacitors.” We also have successfully fabricated “trench-oxide MOS” quantum wires with the width of 16 nm using electron beam (EB) lithography and electron cyclotron resonance reactive ion etching (ECR-RIE).

  19. Ultrasonic fingerprint sensor using a piezoelectric micromachined ultrasonic transducer array integrated with complementary metal oxide semiconductor electronics

    NASA Astrophysics Data System (ADS)

    Lu, Y.; Tang, H.; Fung, S.; Wang, Q.; Tsai, J. M.; Daneman, M.; Boser, B. E.; Horsley, D. A.

    2015-06-01

    This paper presents an ultrasonic fingerprint sensor based on a 24 × 8 array of 22 MHz piezoelectric micromachined ultrasonic transducers (PMUTs) with 100 μm pitch, fully integrated with 180 nm complementary metal oxide semiconductor (CMOS) circuitry through eutectic wafer bonding. Each PMUT is directly bonded to a dedicated CMOS receive amplifier, minimizing electrical parasitics and eliminating the need for through-silicon vias. The array frequency response and vibration mode-shape were characterized using laser Doppler vibrometry and verified via finite element method simulation. The array's acoustic output was measured using a hydrophone to be ˜14 kPa with a 28 V input, in reasonable agreement with predication from analytical calculation. Pulse-echo imaging of a 1D steel grating is demonstrated using electronic scanning of a 20 × 8 sub-array, resulting in 300 mV maximum received amplitude and 5:1 contrast ratio. Because the small size of this array limits the maximum image size, mechanical scanning was used to image a 2D polydimethylsiloxane fingerprint phantom (10 mm × 8 mm) at a 1.2 mm distance from the array.

  20. Ultrasonic fingerprint sensor using a piezoelectric micromachined ultrasonic transducer array integrated with complementary metal oxide semiconductor electronics

    SciTech Connect

    Lu, Y.; Fung, S.; Wang, Q.; Horsley, D. A.; Tang, H.; Boser, B. E.; Tsai, J. M.; Daneman, M.

    2015-06-29

    This paper presents an ultrasonic fingerprint sensor based on a 24 × 8 array of 22 MHz piezoelectric micromachined ultrasonic transducers (PMUTs) with 100 μm pitch, fully integrated with 180 nm complementary metal oxide semiconductor (CMOS) circuitry through eutectic wafer bonding. Each PMUT is directly bonded to a dedicated CMOS receive amplifier, minimizing electrical parasitics and eliminating the need for through-silicon vias. The array frequency response and vibration mode-shape were characterized using laser Doppler vibrometry and verified via finite element method simulation. The array's acoustic output was measured using a hydrophone to be ∼14 kPa with a 28 V input, in reasonable agreement with predication from analytical calculation. Pulse-echo imaging of a 1D steel grating is demonstrated using electronic scanning of a 20 × 8 sub-array, resulting in 300 mV maximum received amplitude and 5:1 contrast ratio. Because the small size of this array limits the maximum image size, mechanical scanning was used to image a 2D polydimethylsiloxane fingerprint phantom (10 mm × 8 mm) at a 1.2 mm distance from the array.