Polyurethane Foam Roofing.

DTIC Science & Technology

1987-04-01

degradation of foam .... ............... ... 53 38 Wet film gauge ....... ..................... 55 39 Peak dry film thickness gauge ... ........... ... 56 40...openings, splits and small holes or other imperfections as the liquid mixture expands and sets to form the finished foam . In addition, they can be applied...are based on the foam insulation thickness desired and the generic type and dry film mil thickness (DFT) of elastomeric protective coating selected

Formation of solar cells based on Ba{sub 0.5}Sr{sub 0.5}TiO{sub 3} (BST) ferroelectric thick film

DOE Office of Scientific and Technical Information (OSTI.GOV)

Irzaman,, E-mail: irzaman@yahoo.com; Syafutra, H., E-mail: irzaman@yahoo.com; Arif, A., E-mail: irzaman@yahoo.com

2014-02-24

Growth of Ba{sub 0.5}Sr{sub 0.5}TiO{sub 3} (BST) 1 M thick films are conducted with variation of annealing hold time of 8 hours, 15 hours, 22 hours, and 29 hours at a constant temperature of 850 °C on p-type Si (100) substrate using sol-gel method then followed by spin coating process at 3000 rpm for 30 seconds. The BST thick film electrical conductivity is obtained to be 10{sup −5} to 10{sup −4} S/cm indicate that the BST thick film is classified as semiconductor material. The semiconductor energy band gap value of BST thick film based on annealing hold time of 8more » hours, 15 hours, 22 hours, and 29 hours are 2.58 eV, 3.15 eV, 3.2 eV and 2.62 eV, respectively. The I-V photovoltaic characterization shows that the BST thick film is potentially solar cell device, and in accordance to annealing hold time of 8 hours, 15 hours, 22 hours and 29 hours have respective solar cell energy conversion efficiencies of 0.343%, 0.399%, 0.469% and 0.374%, respectively. Optical spectroscopy shows that BST thick film solar cells with annealing hold time of 8 hours, 15 hours, and 22 hours absorb effectively light energy at wavelength of ≥ 700 nm. BST film samples with annealing hold time of 29 hours absorb effectively light energy at wavelength of ≤ 700 nm. The BST thick film refraction index is between 1.1 to 1.8 at light wavelength between ±370 to 870 nm.« less

Spin reorientations in Tb-Fe films grown on polyimide substrates

NASA Astrophysics Data System (ADS)

Maneesh, K. Sai; Arout Chelvane, J.; Talapatra, A.; Basumatary, Himalay; Mohanty, J.; Kamat, S. V.

2018-02-01

This paper reports the effect of film thickness and rapid thermal annealing on the spin reorientations in Tb-Fe films grown on flexible polyimide substrates. Magnetization studies indicated that the spins reorient from in-plane to out-of-plane direction with increase in film thicknesses. This was confirmed by magnetic force microscopy studies which showed weak featureless contrast for films deposited with lower thickness and a strong out-of-plane contrast for films grown with higher thicknesses. On subsequent rapid thermal annealing all the Tb-Fe films exhibited in-plane magnetic anisotropy. The results were explained based on competition between uniaxial and shape anisotropies, nature of residual stresses as well as nucleation of crystalline Fe phase in an amorphous Tb-Fe matrix on rapid thermal annealing.

Thickness-dependent domain wall reorientation in 70/30 lead magnesium niobate- lead titanate thin films

DOE PAGES

Keech, Ryan; Morandi, Carl; Wallace, Margeaux; ...

2017-04-11

Continued reduction in length scales associated with many ferroelectric film-based technologies is contingent on retaining the functional properties as the film thickness is reduced. Epitaxial and polycrystalline lead magnesium niobate - lead titanate (70PMN-30PT) thin films were studied over the thickness range of 100-350 nm for the relative contributions to property thickness dependence from interfacial and grain boundary low permittivity layers. Epitaxial PMN-PT films were grown on SrRuO 3 /(001)SrTiO 3, while polycrystalline films with {001}-Lotgering factors >0.96 were grown on Pt/TiO 2/SiO 2/Si substrates via chemical solution deposition. Both film types exhibited similar relative permittivities of ~300 at highmore » fields at all measured thicknesses with highly crystalline electrode/dielectric interfaces. These results, with the DC-biased and temperature dependent dielectric characterization, suggest irreversible domain wall mobility is the major contributor to the overall dielectric response and its thickness dependence. In epitaxial films, the irreversible Rayleigh coefficients reduced 85% upon decreasing thickness from 350 to 100 nm. The temperature at which a peak in the relative permittivity is observed was the only measured small signal quantity which was more thickness dependent in polycrystalline than epitaxial films. This is attributed to the relaxor nature present in the films, potentially stabilized by defect concentrations, and/or chemical inhomogeneity. Finally, the effective interfacial layers are found to contribute to the measured thickness dependence in the longitudinal piezoelectric coefficient.« less

Tuning the thickness of electrochemically grafted layers in large area molecular junctions

NASA Astrophysics Data System (ADS)

Fluteau, T.; Bessis, C.; Barraud, C.; Della Rocca, M. L.; Martin, P.; Lacroix, J.-C.; Lafarge, P.

2014-09-01

We have investigated the thickness, the surface roughness, and the transport properties of oligo(1-(2-bisthienyl)benzene) (BTB) thin films grafted on evaporated Au electrodes, thanks to a diazonium-based electro-reduction process. The thickness of the organic film is tuned by varying the number of electrochemical cycles during the growth process. Atomic force microscopy measurements reveal the evolution of the thickness in the range of 2-27 nm. Its variation displays a linear dependence with the number of cycles followed by a saturation attributed to the insulating behavior of the organic films. Both ultrathin (2 nm) and thin (12 and 27 nm) large area BTB-based junctions have then been fabricated using standard CMOS processes and finally electrically characterized. The electronic responses are fully consistent with a tunneling barrier in case of ultrathin BTB film whereas a pronounced rectifying behavior is reported for thicker molecular films.

Tellurium doping effect in avalanche-mode amorphous selenium photoconductive film

NASA Astrophysics Data System (ADS)

Park, Wug-Dong; Tanioka, Kenkichi

2014-11-01

Amorphous selenium (a-Se) high-gain avalanche rushing amorphous photoconductor (HARP) film has been used for highly sensitive imaging devices. To improve the spectral response of a-Se HARP photoconductive film at a long wavelength, the tellurium (Te) doping effect in an 8-μm-thick a-Se HARP film was investigated. The thickness of the Te-doped a-Se layer in the 8-μm-thick a-Se HARP films was varied from 60 to 120 nm. The signal current increases significantly due to the avalanche multiplication when the target voltage is increased over the threshold voltage. In the 8-μm-thick a-Se HARP film with a Te-doped layer, the spectral response at a long wavelength was improved in comparison with the a-Se HARP film without a Te-doped layer. In addition, the increase of the lag in the 8-μm-thick a-Se HARP target with a Te-doped layer of 120 nm is caused by the photoconductive lag due to the electrons trapped in the Te-doped layer. Based on the current-voltage characteristics, spectral response, and lag characteristics of the 8-μm-thick a-Se HARP targets, the Te-doped layer thickness of 90 nm is suitable for the 8-μm-thick a-Se HARP film.

Sensitive Capacitive-type Hydrogen Sensor Based on Ni Thin Film in Different Hydrogen Concentrations.

PubMed

Pour, Ghobad Behzadi; Aval, Leila Fekri; Eslami, Shahnaz

2018-04-01

Hydrogen sensors are micro/nano-structure that are used to locate hydrogen leaks. They are considered to have fast response/recovery time and long lifetime as compared to conventional gas sensors. In this paper, fabrication of sensitive capacitive-type hydrogen gas sensor based on Ni thin film has been investigated. The C-V curves of the sensor in different hydrogen concentrations have been reported. Dry oxidation was done in thermal chemical vapor deposition furnace (TCVD). For oxidation time of 5 min, the oxide thickness was 15 nm and for oxidation time 10 min, it was 20 nm. The Ni thin film as a catalytic metal was deposited on the oxide film using electron gun deposition. Two MOS sensors were compared with different oxide film thickness and different hydrogen concentrations. The highest response of the two MOS sensors with 15 nm and 20 nm oxide film thickness in 4% hydrogen concentration was 87.5% and 65.4% respectively. The fast response times for MOS sensors with 15 nm and 20 nm oxide film thickness in 4% hydrogen concentration was 8 s and 21 s, respectively. By increasing the hydrogen concentration from 1% to 4%, the response time for MOS sensor (20nm oxide thickness), was decreased from 28s to 21s. The recovery time was inversely increased from 237s to 360s. The experimental results showed that the MOS sensor based on Ni thin film had a quick response and a high sensitivity.

Isothermal elastohydrodynamic lubrication of point contacts. 4: Starvation results

NASA Technical Reports Server (NTRS)

Hamrock, B. J.; Dowson, D.

1976-01-01

The influence of lubricant starvation on minimum film thickness was investigated by moving the inlet boundary closer to the contact center. The following expression was derived for the dimensionless inlet distance at the boundary between the fully flooded and starved conditions: m* = 1 + 3.06 ((R/b)(R/b)H) to the power 0.58, where R is the effective radius of curvature, b is the semiminor axis of the contact ellipse, and H is the central film thickness for fully flooded conditions. A corresponding expression was also given based on the minimum film thickness for fully flooded conditions. Therefore, for m m*, starvation occurs and, for m m*, a fully flooded condition exists. Two other expressions were also derived for the central and minimum film thicknesses for a starved condition. Contour plots of the pressure and the film thickness in and around the contact are shown for the fully flooded and starved lubricating conditions, from which the film thickness was observed to decrease substantially as starvation increases.

Improved interface growth and enhanced flux pinning in YBCO films deposited on an advanced IBAD-MgO based template

NASA Astrophysics Data System (ADS)

Khan, M. Z.; Zhao, Y.; Wu, X.; Malmivirta, M.; Huhtinen, H.; Paturi, P.

2018-02-01

The growth mechanism is studied from the flux pinning point of view in small-scale YBa2Cu3O6+x (YBCO) thin films deposited on a polycrystalline hastelloy with advanced IBAD-MgO based buffer layer architecture. When compared the situation with YBCO films grown on single crystal substrates, the most critical issues that affect the suitable defect formation and thus the optimal vortex pinning landscape, have been studied as a function of the growth temperature and the film thickness evolution. We can conclude that the best critical current property in a wide applied magnetic field range is observed in films grown at relatively low temperature and having intermediate thickness. These phenomena are linked to the combination of the improved interface growth, to the film thickness related crystalline relaxation and to the formation of linear array of edge dislocations that forms the low-angle grain boundaries through the entire film thickness and thus improve the vortex pinning properties. Hence, the optimized buffer layer structure proved to be particularly suitable for new coated conductor solutions.

Effect of chemical structure on film-forming properties of seed oils

USDA-ARS?s Scientific Manuscript database

The film thickness of seven seed oils and two petroleum-based oils of varying chemical structures, was investigated by the method of optical interferometry under pure rolling conditions, and various combinations of entrainment speed (u), load, and temperature. The measured film thickness (h measured...

Crystal structure and mechanical strain in polycrystalline ferrite films on polycrystalline sapphire substrates

NASA Astrophysics Data System (ADS)

Bogdanovich, M. P.

1996-10-01

We have grown films of magnesium, lithium, zinc, and nickel-zinc ferrites, varying in thickness from 0.5 to 8 μm on polycrystalline sapphiresubstrates by coating the surface of the substrate with an aqueous nitric acid solution of salts of the elements which compose the ferrite. The lattice parameter of the ferrite film increases with the film thickness and becomes constant at thicknesses greater than 8 μm. We have determined the ratio of the theoretical strength limit to the macroscopic one in the film based on the change in the interplanar distance d 220 and the lattice parameter calculated from it, under the assumption that the change Δa(h)=a ∞=a(h) results from macroscopic stresses in the film. This ratio shows that when h=1 μm the microstresses in the film are an order of magnitude smaller than the theoretical strength limit. At larger film thicknesses this macroscopic stress becomes even lower, and at the external surface of thick films it goes completely to zero.

Graphene based resonance structure to enhance the optical pressure between two planar surfaces.

PubMed

Hassanzadeh, Abdollah; Azami, Darya

2015-12-28

To enhance the optical pressure on a thin dielectric sample, a resonance structure using graphene layers coated over a metal film on a high index prism sputtered with MgF2 was theoretically analyzed. The number of graphene layers and the thicknesses of metal and MgF2 films were optimized to achieve the highest optical pressure on the sample. Effects of three different types of metals on the optical pressure were investigated numerically. In addition, simulations were carried out for samples with various thicknesses. Our numerical results show that the optical pressure increased by more than five orders of magnitude compared to the conventional metal-film-base resonance structure. The highest optical pressure was obtained for 10 layers of graphene deposited on 29-nm thick Au film and 650 nm thickness of MgF2 at 633nm wavelength, The proposed graphene based resonance structure can open new possibilities for optical tweezers, nanomechnical devices and surface plasmon based sensing and imaging techniques.

Growth process of hydrogenated amorphous carbon films synthesized by atmospheric pressure plasma enhanced CVD using nitrogen and helium as a dilution gas

NASA Astrophysics Data System (ADS)

Mori, Takanori; Sakurai, Takachika; Sato, Taiki; Shirakura, Akira; Suzuki, Tetsuya

2016-04-01

Hydrogenated amorphous carbon films with various thicknesses were synthesized by dielectric barrier discharge-based plasma deposition under atmospheric pressure diluted with nitrogen (N2) and helium (He) at various pulse frequencies. The C2H2/N2 film showed cauliflower-like-particles that grew bigger with the increase in film’s thickness. At 5 kHz, the film with a thickness of 2.7 µm and smooth surface was synthesized. On the other hand, the films synthesized from C2H2/He had a smooth surface and was densely packed with domed particles. The domed particles extended with the increase in the film thickness, enabling it to grow successfully to 37 µm with a smooth surface.

Planar Zeolite Film-Based Potentiometric Gas Sensors Manufactured by a Combined Thick-Film and Electroplating Technique

PubMed Central

Marr, Isabella; Reiß, Sebastian; Hagen, Gunter; Moos, Ralf

2011-01-01

Zeolites are promising materials in the field of gas sensors. In this technology-oriented paper, a planar setup for potentiometric hydrocarbon and hydrogen gas sensors using zeolites as ionic sodium conductors is presented, in which the Pt-loaded Na-ZSM-5 zeolite is applied using a thick-film technique between two interdigitated gold electrodes and one of them is selectively covered for the first time by an electroplated chromium oxide film. The influence of the sensor temperature, the type of hydrocarbons, the zeolite film thickness, and the chromium oxide film thickness is investigated. The influence of the zeolite on the sensor response is briefly discussed in the light of studies dealing with zeolites as selectivity-enhancing cover layers. PMID:22164042

Subtractive fabrication of ferroelectric thin films with precisely controlled thickness

NASA Astrophysics Data System (ADS)

Ievlev, Anton V.; Chyasnavichyus, Marius; Leonard, Donovan N.; Agar, Joshua C.; Velarde, Gabriel A.; Martin, Lane W.; Kalinin, Sergei V.; Maksymovych, Petro; Ovchinnikova, Olga S.

2018-04-01

The ability to control thin-film growth has led to advances in our understanding of fundamental physics as well as to the emergence of novel technologies. However, common thin-film growth techniques introduce a number of limitations related to the concentration of defects on film interfaces and surfaces that limit the scope of systems that can be produced and studied experimentally. Here, we developed an ion-beam based subtractive fabrication process that enables creation and modification of thin films with pre-defined thicknesses. To accomplish this we transformed a multimodal imaging platform that combines time-of-flight secondary ion mass spectrometry with atomic force microscopy to a unique fabrication tool that allows for precise sputtering of the nanometer-thin layers of material. To demonstrate fabrication of thin-films with in situ feedback and control on film thickness and functionality we systematically studied thickness dependence of ferroelectric switching of lead-zirconate-titanate, within a single epitaxial film. Our results demonstrate that through a subtractive film fabrication process we can control the piezoelectric response as a function of film thickness as well as improve on the overall piezoelectric response versus an untreated film.

Subtractive fabrication of ferroelectric thin films with precisely controlled thickness.

PubMed

Ievlev, Anton V; Chyasnavichyus, Marius; Leonard, Donovan N; Agar, Joshua C; Velarde, Gabriel A; Martin, Lane W; Kalinin, Sergei V; Maksymovych, Petro; Ovchinnikova, Olga S

2018-04-02

The ability to control thin-film growth has led to advances in our understanding of fundamental physics as well as to the emergence of novel technologies. However, common thin-film growth techniques introduce a number of limitations related to the concentration of defects on film interfaces and surfaces that limit the scope of systems that can be produced and studied experimentally. Here, we developed an ion-beam based subtractive fabrication process that enables creation and modification of thin films with pre-defined thicknesses. To accomplish this we transformed a multimodal imaging platform that combines time-of-flight secondary ion mass spectrometry with atomic force microscopy to a unique fabrication tool that allows for precise sputtering of the nanometer-thin layers of material. To demonstrate fabrication of thin-films with in situ feedback and control on film thickness and functionality we systematically studied thickness dependence of ferroelectric switching of lead-zirconate-titanate, within a single epitaxial film. Our results demonstrate that through a subtractive film fabrication process we can control the piezoelectric response as a function of film thickness as well as improve on the overall piezoelectric response versus an untreated film.

Subtractive fabrication of ferroelectric thin films with precisely controlled thickness

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ievlev, Anton; Chyasnavichyus, Marius; Leonard, Donovan N.

The ability to control thin-film growth has led to advances in our understanding of fundamental physics as well as to the emergence of novel technologies. However, common thin-film growth techniques introduce a number of limitations related to the concentration of defects on film interfaces and surfaces that limit the scope of systems that can be produced and studied experimentally. Here, we developed an ion-beam based subtractive fabrication process that enables creation and modification of thin films with pre-defined thicknesses. To accomplish this we transformed a multimodal imaging platform that combines time-of-flight secondary ion mass spectrometry with atomic force microscopy tomore » a unique fabrication tool that allows for precise sputtering of the nanometer-thin layers of material. To demonstrate fabrication of thin-films with in situ feedback and control on film thickness and functionality we systematically studied thickness dependence of ferroelectric switching of lead-zirconate-titanate, within a single epitaxial film. Lastly, our results demonstrate that through a subtractive film fabrication process we can control the piezoelectric response as a function of film thickness as well as improve on the overall piezoelectric response versus an untreated film.« less

Subtractive fabrication of ferroelectric thin films with precisely controlled thickness

DOE PAGES

Ievlev, Anton; Chyasnavichyus, Marius; Leonard, Donovan N.; ...

2018-02-22

The ability to control thin-film growth has led to advances in our understanding of fundamental physics as well as to the emergence of novel technologies. However, common thin-film growth techniques introduce a number of limitations related to the concentration of defects on film interfaces and surfaces that limit the scope of systems that can be produced and studied experimentally. Here, we developed an ion-beam based subtractive fabrication process that enables creation and modification of thin films with pre-defined thicknesses. To accomplish this we transformed a multimodal imaging platform that combines time-of-flight secondary ion mass spectrometry with atomic force microscopy tomore » a unique fabrication tool that allows for precise sputtering of the nanometer-thin layers of material. To demonstrate fabrication of thin-films with in situ feedback and control on film thickness and functionality we systematically studied thickness dependence of ferroelectric switching of lead-zirconate-titanate, within a single epitaxial film. Lastly, our results demonstrate that through a subtractive film fabrication process we can control the piezoelectric response as a function of film thickness as well as improve on the overall piezoelectric response versus an untreated film.« less

Effect of film thickness on soft magnetic behavior of Fe2CoSi Heusler alloy for spin transfer torque device applications

NASA Astrophysics Data System (ADS)

Asvini, V.; Saravanan, G.; Kalaiezhily, R. K.; Raja, M. Manivel; Ravichandran, K.

2018-04-01

Fe2CoSi based Heusler alloy thin films were deposited on Si (111) wafer (substrate) of varying thickness using ultra high vacuum DC magnetron sputtering. The structural behavior was observed and found to be hold the L21 structure. The deposited thin films were characterized magnetic properties using vibrating sample magnetometer; the result shows a very high saturated magnetization (Ms), lowest coercivity (Hc), high curie transition temperature (Tc) and low hysteresis loss. Thin film thickness of 75 nm Fe2CoSi sample maintained at substrate temperature 450°C shows the lowest coercivity (Hc=7 Oe). In general, Fe2CoSi Heusler alloys curie transition temperature is very high, due to strong exchange interaction between the Fe and Co atoms. The substrate temperature was kept constant at 450°C for varying thickness (e.g. 5, 20, 50, 75 and 100 nm) of thin film sample. The 75 nm thickness thin film sample shows well crystallanity and good magnetic properties, further squareness ratio in B-H loop increases with the increase in film thickness.

Tear film measurement by optical reflectometry technique

PubMed Central

Lu, Hui; Wang, Michael R.; Wang, Jianhua; Shen, Meixiao

2014-01-01

Abstract. Evaluation of tear film is performed by an optical reflectometer system with alignment guided by a galvanometer scanner. The reflectometer system utilizes optical fibers to deliver illumination light to the tear film and collect the film reflectance as a function of wavelength. Film thickness is determined by best fitting the reflectance-wavelength curve. The spectral reflectance acquisition time is 15 ms, fast enough for detecting film thickness changes. Fast beam alignment of 1 s is achieved by the galvanometer scanner. The reflectometer was first used to evaluate artificial tear film on a model eye with and without a contact lens. The film thickness and thinning rate have been successfully quantified with the minimum measured thickness of about 0.3 μm. Tear films in human eyes, with and without a contact lens, have also been evaluated. A high-contrast spectral reflectance signal from the precontact lens tear film is clearly observed, and the thinning dynamics have been easily recorded from 3.69 to 1.31 μm with lipid layer thickness variation in the range of 41 to 67 nm. The accuracy of the measurement is better than ±0.58% of the film thickness at an estimated tear film refractive index error of ±0.001. The fiber-based reflectometer system is compact and easy to handle. PMID:24500519

Elastohydrodynamic film thickness model for heavily loaded contacts

NASA Technical Reports Server (NTRS)

Loewenthal, S. H.; Parker, R. J.; Zaretsky, E. V.

1973-01-01

An empirical elastohydrodynamic (EHD) film thickness formula for predicting the minimum film thickness occurring within heavily loaded contacts (maximum Hertz stresses above 150,000 psi) was developed. The formula was based upon X-ray film thickness measurements made with synthetic paraffinic, fluorocarbon, Type II ester and polyphenyl ether fluids covering a wide range of test conditions. Comparisons were made between predictions from an isothermal EHD theory and the test data. The deduced relationship was found to adequately reflect the high-load dependence exhibited by the measured data. The effects of contact geometry, material and lubricant properties on the form of the empirical model are also discussed.

Polycrystalline Ba0.6Sr0.4TiO3 thin films on r-plane sapphire: Effect of film thickness on strain and dielectric properties

NASA Astrophysics Data System (ADS)

Fardin, E. A.; Holland, A. S.; Ghorbani, K.; Akdogan, E. K.; Simon, W. K.; Safari, A.; Wang, J. Y.

2006-10-01

Polycrystalline Ba0.6Sr0.4TiO3 (BST) films grown on r-plane sapphire exhibit strong variation of in-plane strain over the thickness range of 25-400nm. At a critical thickness of ˜200nm, the films are strain relieved; in thinner films, the strain is tensile, while compressive strain was observed in the 400nm film. Microwave properties of the films were measured from 1to20GHz by the interdigital capacitor method. A capacitance tunability of 64% was observed in the 200nm film, while thinner films showed improved Q factor. These results demonstrate the possibility of incorporating frequency agile BST-based devices into the silicon on sapphire process.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Park, Wug-Dong; Tanioka, Kenkichi

Amorphous selenium (a-Se) high-gain avalanche rushing amorphous photoconductor (HARP) film has been used for highly sensitive imaging devices. To improve the spectral response of a-Se HARP photoconductive film at a long wavelength, the tellurium (Te) doping effect in an 8-μm-thick a-Se HARP film was investigated. The thickness of the Te-doped a-Se layer in the 8-μm-thick a-Se HARP films was varied from 60 to 120 nm. The signal current increases significantly due to the avalanche multiplication when the target voltage is increased over the threshold voltage. In the 8-μm-thick a-Se HARP film with a Te-doped layer, the spectral response at a longmore » wavelength was improved in comparison with the a-Se HARP film without a Te-doped layer. In addition, the increase of the lag in the 8-μm-thick a-Se HARP target with a Te-doped layer of 120 nm is caused by the photoconductive lag due to the electrons trapped in the Te-doped layer. Based on the current-voltage characteristics, spectral response, and lag characteristics of the 8-μm-thick a-Se HARP targets, the Te-doped layer thickness of 90 nm is suitable for the 8-μm-thick a-Se HARP film.« less

(100)-Textured KNN-based thick film with enhanced piezoelectric property for intravascular ultrasound imaging

PubMed Central

Zhu, Benpeng; Zhang, Zhiqiang; Ma, Teng; Yang, Xiaofei; Li, Yongxiang; Shung, K. Kirk; Zhou, Qifa

2015-01-01

Using tape-casting technology, 35 μm free-standing (100)-textured Li doped KNN (KNLN) thick film was prepared by employing NaNbO3 (NN) as template. It exhibited similar piezoelectric behavior to lead containing materials: a longitudinal piezoelectric coefficient (d33) of ∼150 pm/V and an electromechanical coupling coefficient (kt) of 0.44. Based on this thick film, a 52 MHz side-looking miniature transducer with a bandwidth of 61.5% at −6 dB was built for Intravascular ultrasound (IVUS) imaging. In comparison with 40 MHz PMN-PT single crystal transducer, the rabbit aorta image had better resolution and higher noise-to-signal ratio, indicating that lead-free (100)-textured KNLN thick film may be suitable for IVUS (>50 MHz) imaging. PMID:25991874

Density change and viscous flow during structural relaxation of plasma-enhanced chemical-vapor-deposited silicon oxide films

NASA Astrophysics Data System (ADS)

Cao, Zhiqiang; Zhang, Xin

2004-10-01

The structural relaxation of plasma-enhanced chemical-vapor-deposited (PECVD) silane-based silicon oxide films during thermal cycling and annealing has been studied using wafer curvature measurements. These measurements, which determine stress in the amorphous silicon oxide films, are sensitive to both plastic deformation and density changes. A quantitative case study of such changes has been done based upon the experimental results. A microstructure-based mechanism elucidates seams as a source of density change and voids as a source of plastic deformation, accompanied by a viscous flow. This theory was then used to explain a series of experimental results that are related to thermal cycling as well as annealing of PECVD silicon oxide films including stress hysteresis generation and reduction and coefficient of thermal-expansion changes. In particular, the thickness effect was examined; PECVD silicon oxide films with a thickness varying from 1to40μm were studied, as certain demanding applications in microelectromechanical systems require such thick films serving as heat/electrical insulation layers.

Relation between film thickness and surface doping of MoS2 based field effect transistors

NASA Astrophysics Data System (ADS)

Lockhart de la Rosa, César J.; Arutchelvan, Goutham; Leonhardt, Alessandra; Huyghebaert, Cedric; Radu, Iuliana; Heyns, Marc; De Gendt, Stefan

2018-05-01

Ultra-thin MoS2 film doping through surface functionalization with physically adsorbed species is of great interest due to its ability to dope the film without reduction in the carrier mobility. However, there is a need for understanding how the thickness of the MoS2 film is related to the induced surface doping for improved electrical performance. In this work, we report on the relation of MoS2 film thickness with the doping effect induced by the n-dopant adsorbate poly(vinyl-alcohol). Field effect transistors built using MoS2 films of different thicknesses were electrically characterized, and it was observed that the ION/OFF ratio after doping in thin films is more than four orders of magnitudes greater when compared with thick films. Additionally, a semi-classical model tuned with the experimental devices was used to understand the spatial distribution of charge in the channel and explain the observed behavior. From the simulation results, it was revealed that the two-dimensional carrier density induced by the adsorbate is distributed rather uniformly along the complete channel for thin films (<5.2 nm) contrary to what happens for thicker films.

High-Hall-Mobility Al-Doped ZnO Films Having Textured Polycrystalline Structure with a Well-Defined (0001) Orientation

NASA Astrophysics Data System (ADS)

Nomoto, Junichi; Makino, Hisao; Yamamoto, Tetsuya

2016-06-01

Five hundred-nanometer-thick ZnO-based textured polycrystalline films consisting of 490-nm-thick Al-doped ZnO (AZO) films deposited on 10-nm-thick Ga-doped ZnO (GZO) films exhibited a high Hall mobility ( μ H) of 50.1 cm2/Vs with a carrier concentration ( N) of 2.55 × 1020 cm-3. Firstly, the GZO films were prepared on glass substrates by ion plating with dc arc discharge, and the AZO films were then deposited on the GZO films by direct current magnetron sputtering (DC-MS). The GZO interface layers with a preferential c-axis orientation play a critical role in producing AZO films with texture development of a well-defined (0001) orientation, whereas 500-nm-thick AZO films deposited by only DC-MS showed a mixture of the c-plane and the other plane orientation, to exhibit a μ H of 38.7 cm2/Vs with an N of 2.22 × 1020 cm-3.

Simultaneous determination of the residual stress, elastic modulus, density and thickness of ultrathin film utilizing vibrating doubly clamped micro-/nanobeams

DOE Office of Scientific and Technical Information (OSTI.GOV)

Stachiv, Ivo, E-mail: stachiv@fzu.cz; Institute of Physics, Czech Academy of Sciences, Prague; Kuo, Chih-Yun

2016-04-15

Measurement of ultrathin film thickness and its basic properties can be highly challenging and time consuming due to necessity of using several very sophisticated devices. Here, we report an easy accessible resonant based method capable to simultaneously determinate the residual stress, elastic modulus, density and thickness of ultrathin film coated on doubly clamped micro-/nanobeam. We show that a general dependency of the resonant frequencies on the axial load is also valid for in-plane vibrations, and the one depends only on the considered vibrational mode. As a result, we found that the film elastic modulus, density and thickness can be evaluatedmore » from two measured in-plane and out-plane fundamental resonant frequencies of micro-/nanobeam with and without film under different prestress forces. Whereas, the residual stress can be determined from two out-plane (in-plane) measured consecutive resonant frequencies of beam with film under different prestress forces without necessity of knowing film and substrate properties and dimensions. Moreover, we also reveal that the common uncertainties in force (and thickness) determination have a negligible (and minor) impact on the determined film properties. The application potential of the present method is illustrated on the beam made of silicon and SiO{sub 2} with deposited 20 nm thick AlN and 40 nm thick Au thin films, respectively.« less

Huge domain-wall speed variation with respect to ferromagnetic layer thickness in ferromagnetic Pt/Co/TiO2/Pt films

NASA Astrophysics Data System (ADS)

Kim, Dae-Yun; Park, Min-Ho; Park, Yong-Keun; Yu, Ji-Sung; Kim, Joo-Sung; Kim, Duck-Ho; Min, Byoung-Chul; Choe, Sug-Bong

2018-02-01

In this study, we investigate the influence of the ferromagnetic layer thickness on the magnetization process. A series of ultrathin Pt/Co/TiO2/Pt films exhibits domain-wall (DW) speed variation of over 100,000 times even under the same magnetic field, depending on the ferromagnetic layer thickness. From the creep-scaling analysis, such significant variation is found to be mainly attributable to the thickness-dependence of the creep-scaling constant in accordance with the creep-scaling theory of the linear proportionality between the creep-scaling constant and the ferromagnetic layer thickness. Therefore, a thinner film shows a faster DW speed. The DW roughness also exhibits sensitive dependence on the ferromagnetic layer thickness: a thinner film shows smoother DW. The present observation provided a guide for an optimal design rule of the ferromagnetic layer thickness for better performance of DW-based devices.

Effects of Loading Frequency and Film Thickness on the Mechanical Behavior of Nanoscale TiN Film

NASA Astrophysics Data System (ADS)

Liu, Jin-na; Xu, Bin-shi; Wang, Hai-dou; Cui, Xiu-fang; Jin, Guo; Xing, Zhi-guo

2017-09-01

The mechanical properties of a nanoscale-thickness film material determine its reliability and service life. To achieve quantitative detection of film material mechanical performance based on nanoscale mechanical testing methods and to explore the influence of loading frequency of the cycle load on the fatigue test, a TiN film was prepared on monocrystalline silicon by magnetron sputtering. The microstructure of the nanoscale-thickness film material was characterized by using scanning electron microscopy and high-resolution transmission electron microscopy. The residual stress distribution of the thin film was obtained by using an electronic film stress tester. The hardness values and the fatigue behavior were measured by using a nanomechanical tester. Combined with finite element simulation, the paper analyzed the influence of the film thickness and loading frequency on the deformation, as well as the equivalent stress and strain. The results showed that the TiN film was a typical face-centered cubic structure with a large amount of amorphous. The residual compressive stress decreased gradually with increasing thin film thickness, and the influence of the substrate on the elastic modulus and hardness was also reduced. A greater load frequency would accelerate the dynamic fatigue damage that occurs in TiN films.

A wrinkling-based method for investigating glassy polymer film relaxation as a function of film thickness and temperature.

PubMed

Chung, Jun Young; Douglas, Jack F; Stafford, Christopher M

2017-10-21

We investigate the relaxation dynamics of thin polymer films at temperatures below the bulk glass transition T g by first compressing polystyrene films supported on a polydimethylsiloxane substrate to create wrinkling patterns and then observing the slow relaxation of the wrinkled films back to their final equilibrium flat state by small angle light scattering. As with recent relaxation measurements on thin glassy films reported by Fakhraai and co-workers, we find the relaxation time of our wrinkled films to be strongly dependent on film thickness below an onset thickness on the order of 100 nm. By varying the temperature between room temperature and T g (≈100 °C), we find that the relaxation time follows an Arrhenius-type temperature dependence to a good approximation at all film thicknesses investigated, where both the activation energy and the relaxation time pre-factor depend appreciably on film thickness. The wrinkling relaxation curves tend to cross at a common temperature somewhat below T g , indicating an entropy-enthalpy compensation relation between the activation free energy parameters. This compensation effect has also been observed recently in simulated supported polymer films in the high temperature Arrhenius relaxation regime rather than the glassy state. In addition, we find that the film stress relaxation function, as well as the height of the wrinkle ridges, follows a stretched exponential time dependence and the short-time effective Young's modulus derived from our modeling decreases sigmoidally with increasing temperature-both characteristic features of glassy materials. The relatively facile nature of the wrinkling-based measurements in comparison to other film relaxation measurements makes our method attractive for practical materials development, as well as fundamental studies of glass formation.

A wrinkling-based method for investigating glassy polymer film relaxation as a function of film thickness and temperature

NASA Astrophysics Data System (ADS)

Chung, Jun Young; Douglas, Jack F.; Stafford, Christopher M.

2017-10-01

We investigate the relaxation dynamics of thin polymer films at temperatures below the bulk glass transition Tg by first compressing polystyrene films supported on a polydimethylsiloxane substrate to create wrinkling patterns and then observing the slow relaxation of the wrinkled films back to their final equilibrium flat state by small angle light scattering. As with recent relaxation measurements on thin glassy films reported by Fakhraai and co-workers, we find the relaxation time of our wrinkled films to be strongly dependent on film thickness below an onset thickness on the order of 100 nm. By varying the temperature between room temperature and Tg (≈100 °C), we find that the relaxation time follows an Arrhenius-type temperature dependence to a good approximation at all film thicknesses investigated, where both the activation energy and the relaxation time pre-factor depend appreciably on film thickness. The wrinkling relaxation curves tend to cross at a common temperature somewhat below Tg, indicating an entropy-enthalpy compensation relation between the activation free energy parameters. This compensation effect has also been observed recently in simulated supported polymer films in the high temperature Arrhenius relaxation regime rather than the glassy state. In addition, we find that the film stress relaxation function, as well as the height of the wrinkle ridges, follows a stretched exponential time dependence and the short-time effective Young's modulus derived from our modeling decreases sigmoidally with increasing temperature—both characteristic features of glassy materials. The relatively facile nature of the wrinkling-based measurements in comparison to other film relaxation measurements makes our method attractive for practical materials development, as well as fundamental studies of glass formation.

Advances in thickness measurements and dynamic visualization of the tear film using non-invasive optical approaches.

PubMed

Bai, Yuqiang; Nichols, Jason J

2017-05-01

The thickness of tear film has been investigated under both invasive and non-invasive methods. While invasive methods are largely historical, more recent noninvasive methods are generally based on optical approaches that provide accurate, precise, and rapid measures. Optical microscopy, interferometry, and optical coherence tomography (OCT) have been developed to characterize the thickness of tear film or certain aspects of the tear film (e.g., the lipid layer). This review provides an in-depth overview on contemporary optical techniques used in studying the tear film, including both advantages and limitations of these approaches. It is anticipated that further developments of high-resolution OCT and other interferometric methods will enable a more accurate and precise measurement of the thickness of the tear film and its related dynamic properties. Copyright © 2017 Elsevier Ltd. All rights reserved.

Investigation of Shear-Thinning Behavior on Film Thickness and Friction Coefficient of Polyalphaolefin Base Fluids With Varying Olefin Copolymer Content

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zolper, Thomas J.; He, Yifeng; Delferro, Massimiliano

2016-08-11

This study investigates the rheological properties, elastohydrodynamic (EHD) film-forming capability, and friction coefficients of low molecular mass poly-alpha-olefin (PAO) base stocks with varying contents of high molecular mass olefin copolymers (OCPs) to assess their shear stability and their potential for energy-efficient lubrication. Several PAO-OCP mixtures were blended in order to examine the relationship between their additive content and tribological performance. Gel permeation chromatography (GPC) and nuclear magnetic resonance (NMR) spectroscopy were used to characterize the molecular masses and structures, respectively. Density, viscosity, EHD film thickness, and friction were measured at 303 K, 348 K, and 398 K. Film thickness andmore » friction were studied at entrainment speeds relevant to the boundary, mixed, and full-film lubrication regimes. The PAO-OCP mixtures underwent temporary shear-thinning resulting in decreases in film thickness and hydrodynamic friction. These results demonstrate that the shear characteristics of PAO-OCP mixtures can be tuned with the OCP content and provide insight into the effects of additives on EHD characteristics.« less

Effect of Dielectric Material Films on Crystallization Characteristics of Ge2Sb2Te5 Phase-Change Memory Film

NASA Astrophysics Data System (ADS)

Nishiuchi, Kenichi; Yamada, Noboru; Kawahara, Katsumi; Kojima, Rie

2007-11-01

Reduction of the film thickness of phase-change film and the adoption of GeN- or ZrO2-based dielectric films are both effective in achieving good thermal stability in phase-change optical disks. It was experimentally confirmed that, at a heating rate of 10 °C/min, the crystallization temperature Tx of the Ge2Sb2Te5 amorphous film when sandwiched by ZnS-SiO2 films markedly increases from 162 to 197 °C, while the thickness of the Ge2Sb2Te5 film decreases from 10 to 3 nm. Tx also slightly increases when ZnS-SiO2 films are substituted for GeN-based films (from 162 to 165 °C) and ZrO2-based films (from 162 to 167 °C). At the same time, the activation energy of crystallization is 2.4 eV for both GeN- and ZrO2-based films, and is higher than 2.2 eV for ZnS-SiO2 films.

High Transparent and Conductive TiO2/Ag/TiO2 Multilayer Electrode Films Deposited on Sapphire Substrate

NASA Astrophysics Data System (ADS)

Loka, Chadrasekhar; Moon, Sung Whan; Choi, YiSik; Lee, Kee-Sun

2018-03-01

Transparent conducting oxides attract intense interests due to its diverse industrial applications. In this study, we report sapphire substrate-based TiO2/Ag/TiO2 (TAT) multilayer structure of indium-free transparent conductive multilayer coatings. The TAT thin films were deposited at room temperature on sapphire substrates and a rigorous analysis has been presented on the electrical and optical properties of the films as a function of Ag thickness. The optical and electrical properties were mainly controlled by the Ag mid-layer thickness of the TAT tri-layer. The TAT films showed high luminous transmittance 84% at 550 nm along with noteworthy low electrical resistance 3.65 × 10-5 Ω-cm and sheet resistance of 3.77 Ω/square, which is better are than those of amorphous ITO films and any sapphire-based dielectric/metal/dielectric multilayer stack. The carrier concentration of the films was increased with respect to Ag thickness. We obtained highest Hackke's figure of merit 43.97 × 10-3 Ω-1 from the TAT multilayer thin film with a 16 nm thick Ag mid-layer.

The Effect of Film Thickness on the Gas Sensing Properties of Ultra-Thin TiO₂ Films Deposited by Atomic Layer Deposition.

PubMed

Wilson, Rachel L; Simion, Cristian Eugen; Blackman, Christopher S; Carmalt, Claire J; Stanoiu, Adelina; Di Maggio, Francesco; Covington, James A

2018-03-01

Analyte sensitivity for gas sensors based on semiconducting metal oxides should be highly dependent on the film thickness, particularly when that thickness is on the order of the Debye length. This thickness dependence has previously been demonstrated for SnO₂ and inferred for TiO₂. In this paper, TiO₂ thin films have been prepared by Atomic Layer Deposition (ALD) using titanium isopropoxide and water as precursors. The deposition process was performed on standard alumina gas sensor platforms and microscope slides (for analysis purposes), at a temperature of 200 °C. The TiO₂ films were exposed to different concentrations of CO, CH₄, NO₂, NH₃ and SO₂ to evaluate their gas sensitivities. These experiments showed that the TiO₂ film thickness played a dominant role within the conduction mechanism and the pattern of response for the electrical resistance towards CH₄ and NH₃ exposure indicated typical n -type semiconducting behavior. The effect of relative humidity on the gas sensitivity has also been demonstrated.

Thickness measurement of nontransparent free films by double-side white-light interferometry: Calibration and experiments

DOE Office of Scientific and Technical Information (OSTI.GOV)

Poilane, C.; Sandoz, P.; Departement d'Optique PM Duffieux, Institut FEMTO-ST, UMR CNRS 6174, Universite de Franche-Comte, 25030 Besancon, Cedex

2006-05-15

A double-side optical profilometer based on white-light interferometry was developed for thickness measurement of nontransparent films. The profile of the sample is measured simultaneously on both sides of the film. The resulting data allow the computation of the roughness, the flatness and the parallelism of the sides of the film, and the average thickness of the film. The key point is the apparatus calibration, i.e., the accurate determination of the distance between the reference mirrors of the complementary interferometers. Specific samples were processed for that calibration. The system is adaptable to various thickness scales as long as calibration can bemore » made accurately. A thickness accuracy better than 30 nm for films thinner than 200 {mu}m is reported with the experimental material used. In this article, we present the principle of the method as well as the calibration methodology. Limitation and accuracy of the method are discussed. Experimental results are presented.« less

Thickness-dependent spontaneous dewetting morphology of ultrathin Ag films.

PubMed

Krishna, H; Sachan, R; Strader, J; Favazza, C; Khenner, M; Kalyanaraman, R

2010-04-16

We show here that the morphological pathway of spontaneous dewetting of ultrathin Ag films on SiO2 under nanosecond laser melting is dependent on film thickness. For films with thickness h of 2 nm < or = h < or = 9.5 nm, the morphology during the intermediate stages of dewetting consisted of bicontinuous structures. For films with 11.5 nm < or = h < or = 20 nm, the intermediate stages consisted of regularly sized holes. Measurement of the characteristic length scales for different stages of dewetting as a function of film thickness showed a systematic increase, which is consistent with the spinodal dewetting instability over the entire thickness range investigated. This change in morphology with thickness is consistent with observations made previously for polymer films (Sharma and Khanna 1998 Phys. Rev. Lett. 81 3463-6; Seemann et al 2001 J. Phys.: Condens. Matter 13 4925-38). Based on the behavior of free energy curvature that incorporates intermolecular forces, we have estimated the morphological transition thickness for the intermolecular forces for Ag on SiO2. The theory predictions agree well with observations for Ag. These results show that it is possible to form a variety of complex Ag nanomorphologies in a consistent manner, which could be useful in optical applications of Ag surfaces, such as in surface enhanced Raman sensing.

Dewetting-Induced Photoluminescent Enhancement of Poly(lauryl methacrylate)/Quantum Dot Thin Films.

PubMed

Geldmeier, Jeffrey; Rile, Lexy; Yoon, Young Jun; Jung, Jaehan; Lin, Zhiqun; Tsukruk, Vladimir V

2017-12-19

A new method for enhancing photoluminescence from quantum dot (QD)/polymer nanocomposite films is proposed. Poly(lauryl methacrylate) (PLMA) thin films containing embedded QDs are intentionally allowed to undergo dewetting on substrates by exposure to a nonsolvent vapor. After controlled dewetting, films exhibited typical dewetting morphologies with increased amounts of scattering that served to outcouple photoluminescence from the film and reduce internal light propagation within the film. Up to a 5-fold enhancement of the film emission was achieved depending on material factors such as the initial film thickness and QD concentration within the film. An increase in initial film thickness was shown to increase the dewetted maximum feature size and its characteristic length until a critical thickness was reached where dewetting became inhibited. A unique light exposure-based photopatterning method is also presented for the creation of high contrast emissive patterns as guided by spatially controlled dewetting.

Aggregation Strength Tuning in Difluorobenzoxadiazole-Based Polymeric Semiconductors for High-Performance Thick-Film Polymer Solar Cells.

PubMed

Chen, Peng; Shi, Shengbin; Wang, Hang; Qiu, Fanglong; Wang, Yuxi; Tang, Yumin; Feng, Jian-Rui; Guo, Han; Cheng, Xing; Guo, Xugang

2018-06-27

High-performance polymer solar cells (PSCs) with thick active layers are essential for large-scale production. Polymer semiconductors exhibiting a temperature-dependent aggregation property offer great advantages toward this purpose. In this study, three difluorobenzoxadiazole (ffBX)-based donor polymers, PffBX-T, PffBX-TT, and PffBX-DTT, were synthesized, which contain thiophene (T), thieno[3,2- b]thiophene (TT), and dithieno[3,2- b:2',3'- d]thiophene (DTT) as the π-spacers, respectively. Temperature-dependent absorption spectra reveal that the aggregation strength increases in the order of PffBX-T, PffBX-TT, and PffBX-DTT as the π-spacer becomes larger. PffBX-TT with the intermediate aggregation strength enables well-controlled disorder-order transition in the casting process of blend film, thus leading to the best film morphology and the highest performance in PSCs. Thick-film PSCs with an average power conversion efficiency (PCE) of 8.91% and the maximum value of 9.10% are achieved using PffBX-TT:PC 71 BM active layer with a thickness of 250 nm. The neat film of PffBX-TT also shows a high hole mobility of 1.09 cm 2 V -1 s -1 in organic thin-film transistors. When PffBX-DTT and PffBX-T are incorporated into PSCs utilizing PC 71 BM acceptor, the average PCE decreases to 6.54 and 1.33%, respectively. The performance drop mainly comes from reduced short-circuit current, as a result of nonoptimal blend film morphology caused by a less well-controlled film formation process. A similar trend was also observed in nonfullerene type thick-film PSCs using IT-4F as the electron acceptor. These results show the significance of polymer aggregation strength tuning toward optimal bulk heterojunction film morphology using ffBX-based polymer model system. The study demonstrates that adjusting π-spacer is an effective method, in combination with other important approaches such as alkyl chain optimization, to generate high-performance thick-film PSCs which are critical for practical applications.

Fabrication and characterization of piezoelectric micromachined ultrasonic transducers with thick composite PZT films.

PubMed

Wang, Zhihong; Zhu, Weiguang; Zhu, Hong; Miao, Jianmin; Chao, Chen; Zhao, Changlei; Tan, Ooi Kiang

2005-12-01

Ferroelectric microelectromechanical systems (MEMS) has been a growing area of research in past decades, in which ferroelectric films are combined with silicon technology for a variety of applications, such as piezo-electric micromachined ultrasonic transducers (pMUTs), which represent a new approach to ultrasound detection and generation. For ultrasound-radiating applications, thicker PZT films are preferred because generative force and response speed of the diaphragm-type transducers increase with increasing film thickness. However, integration of 4- to 20-microm thick PZT films on silicon wafer, either the deposition or the patterning, is still a bottleneck in the micromachining process. This paper reports on a diaphragm-type pMUT. A composite coating technique based on chemical solution deposition and high-energy ball milled powder has been used to fabricate thick PZT films. Micromachining of the pMUTs using such thick films has been investigated. The fabricated pMUT with crack-free PZT films up to 7-microm thick was evaluated as an ultrasonic transmitter. The generated sound pressure level of up to 120 dB indicates that the fabricated pMUT has very good ultrasound-radiating performance and, therefore, can be used to compose pMUT arrays for generating ultrasound beam with high directivity in numerous applications. The pMUT arrays also have been demonstrated.

Kinetics of sub-spinodal dewetting of thin films of thickness dependent viscosity.

PubMed

Kotni, Tirumala Rao; Khanna, Rajesh; Sarkar, Jayati

2017-05-04

An alternative explanation of the time varying and very low growth exponents in dewetting of polymer films like polystyrene films is presented based on non-linear simulations. The kinetics of these films is explored within the framework of experimentally observed thickness dependent viscosity. These films exhibit sub-spinodal dewetting via formation of satellite holes in between primary dewetted holes under favorable conditions of excess intermolecular forces and film thicknesses. We find that conditions responsible for sub-spinodal dewetting concurrently lead to remarkable changes in the kinetics of dewetting of even primary holes. For example, the radius of the hole grows in time with a power-law growth exponent sequence of [Formula: see text], in contrast to the usual  ∼4/5. This is due to the cumulative effect of reduced rim mobility due to thickness dependent viscosity and hindrance created by satellite holes.

Thermal Effusivity Determination of Metallic Films of Nanometric Thickness by the Electrical Micropulse Method

NASA Astrophysics Data System (ADS)

Lugo, J. M.; Oliva, A. I.

2017-02-01

The thermal effusivity of gold, aluminum, and copper thin films of nanometric thickness (20 nm to 200 nm) was investigated in terms of the films' thickness. The metallic thin films were deposited onto glass substrates by thermal evaporation, and the thermal effusivity was estimated by using experimental parameters such as the specific heat, thermal conductivity, and thermal diffusivity values obtained at room conditions. The specific heat, thermal conductivity, and thermal diffusivity values of the metallic thin films are determined with a methodology based on the behavior of the thermal profiles of the films when electrical pulses of few microseconds are applied at room conditions. For all the investigated materials, the thermal effusivity decreases with decreased thickness. The thermal effusivity values estimated by the presented methodology are consistent with other reported values obtained under vacuum conditions and more elaborated methodologies.

Investigation of Electrical and Optical Properties of Highly Transparent TCO/Ag/TCO Multilayer.

PubMed

Kim, Sunbo; Lee, Jaehyeong; Dao, Vinh Ai; Ahn, Shihyun; Hussain, Shahzada Qamar; Park, Jinjoo; Jung, Junhee; Lee, Chan; Song, Bong-Shik; Choi, Byoungdeog; Lee, Youn-Jung; Iftiquar, S M; Yi, Junsin

2015-03-01

Transparent conductive oxides (TCOs) have been widely used as transparent electrodes for opto-electronic devices, such as solar cells, flat-panel displays, and light-emitting diodes, because of their unique characteristics of high optical transmittance and low electrical resistivity. Among various TCO materials, zinc oxide based films have recently received much attention because they have advantages over commonly used indium and tin-based oxide films. Most TCO films, however, exhibit valleys of transmittance in the wavelength range of 550-700 nm, lowering the average transmittance in the visible region and decreasing short-circuit current (Isc) of solar cells. A TCO/Ag/TCO multi-layer structure has emerged as an attractive alternative because it provides optical characteristics without the valley of transmittance compared with a 100-nm-thick single-layer TCO. In this article, we report the electrical, optical and surface properties of TCO/Ag/TCO. These multi-layers were deposited at room temperature with various Ag film thicknesses from 5 to 15 nm while the thickness of TCO thin film was fixed at 40 nm. The TCO/Ag/TCO multi-layer with a 10-nm-thick Ag film showed optimum transmittance in the visible (400-800 nm) wavelength region. These multi-layer structures have advantages over TCO layers of the same thickness.

Tuning thermoelectricity in a Bi 2Se 3 topological insulator via varied film thickness

DOE PAGES

Guo, Minghua; Wang, Zhenyu; Xu, Yong; ...

2016-01-12

We report thermoelectric transport studies on Bi 2Se 3 topological insulator thin films with varied thickness grown by molecular beam epitaxy. We find that the Seebeck coefficient and thermoelectric power factor decrease systematically with the reduction of film thickness. These experimental observations can be explained quantitatively by theoretical calculations based on realistic electronic band structure of the Bi 2Se 3 thin films. Lastly, this work illustrates the crucial role played by the topological surface states on the thermoelectric transport of topological insulators, and sheds new light on further improvement of their thermoelectric performance.

Secondary Crystal Growth on a Cracked Hydrotalcite-Based Film Synthesized by the Sol-Gel Method.

PubMed

Lee, Wooyoung; Lee, Chan Hyun; Lee, Ki Bong

2016-05-02

The sol-gel synthesis method is an attractive technology for the fabrication of ceramic films due to its preparation simplicity and ease of varying the metal composition. However, this technique presents some limitations in relation to the film thickness. Notably, when the film thickness exceeds the critical limit, large tensile stresses occur, resulting in a cracked morphology. In this study, a secondary crystal growth method was introduced as a post-treatment process for Mg/Al hydrotalcite-based films synthesized by the sol-gel method, which typically present a cracked morphology. The cracked hydrotalcite-based film was hydrothermally treated for the secondary growth of hydrotalcite crystals. In the resulting film, hydrotalcite grew with a vertical orientation, and the gaps formed during the sol-gel synthesis were filled with hydrotalcite after the crystal growth. The secondary crystal growth method provides a new solution for cracked ceramic films synthesized by the sol-gel method.

In situ conductance measurements of copper phthalocyanine thin film growth on sapphire [0001].

PubMed

Murdey, Richard; Sato, Naoki

2011-06-21

The current flowing through a thin film of copper phthalocyanine vacuum deposited on a single crystal sapphire [0001] surface was measured during film growth from 0 to 93 nm. The results, expressed as conductance vs. nominal film thickness, indicate three distinct film growth regions. Conductive material forms below about 5 nm and again above 35 nm, but in the intermediate thicknesses the film conductance was observed to decrease with increasing film thickness. With the aid of ac-AFM topology images taken ex situ, the conductance results are explained based on the Stranski-Krastanov (2D + 3D) film growth mechanism, in which the formation of a thin wetting layer is followed by the growth of discrete islands that eventually coalesce into an interpenetrating, conductive network. © 2011 American Institute of Physics

Impact of a counter-rotating planetary rotation system on thin-film thickness and uniformity

DOE PAGES

Oliver, J. B.

2017-06-12

Planetary rotation systems incorporating forward- and counter-rotating planets are used as a means of increasing coating-system capacity for large oblong substrates. Comparisons of planetary motion for the two types of rotating systems are presented based on point tracking for multiple revolutions, as well as comparisons of quantitative thickness and uniformity. Counter-rotation system geometry is shown to result in differences in thin-film thickness relative to standard planetary rotation for precision optical coatings. As a result, this systematic error in thin-film thickness will reduce deposition yields for sensitive coating designs.

Impact of a counter-rotating planetary rotation system on thin-film thickness and uniformity.

PubMed

Oliver, J B

2017-06-20

Planetary rotation systems incorporating forward- and counter-rotating planets are used as a means of increasing coating-system capacity for large oblong substrates. Comparisons of planetary motion for the two types of rotating systems are presented based on point tracking for multiple revolutions as well as comparisons of quantitative thickness and uniformity. Counter-rotation system geometry is shown to result in differences in thin-film thickness relative to standard planetary rotation for precision optical coatings. This systematic error in thin-film thickness will reduce deposition yields for sensitive coating designs.

Impact of a counter-rotating planetary rotation system on thin-film thickness and uniformity

DOE Office of Scientific and Technical Information (OSTI.GOV)

Oliver, J. B.

Planetary rotation systems incorporating forward- and counter-rotating planets are used as a means of increasing coating-system capacity for large oblong substrates. Comparisons of planetary motion for the two types of rotating systems are presented based on point tracking for multiple revolutions, as well as comparisons of quantitative thickness and uniformity. Counter-rotation system geometry is shown to result in differences in thin-film thickness relative to standard planetary rotation for precision optical coatings. As a result, this systematic error in thin-film thickness will reduce deposition yields for sensitive coating designs.

Enhanced electrical stability of nitrate ligand-based hexaaqua complexes solution-processed ultrathin a-IGZO transistors

NASA Astrophysics Data System (ADS)

Choi, C.; Baek, Y.; Lee, B. M.; Kim, K. H.; Rim, Y. S.

2017-12-01

We report solution-processed, amorphous indium-gallium-zinc-oxide-based (a-IGZO-based) thin-film transistors (TFTs). Our proposed solution-processed a-IGZO films, using a simple spin-coating method, were formed through nitrate ligand-based metal complexes, and they were annealed at low temperature (250 °C) to achieve high-quality oxide films and devices. We investigated solution-processed a-IGZO TFTs with various thicknesses, ranging from 4 to 16 nm. The 4 nm-thick TFT films had smooth morphology and high-density, and they exhibited excellent performance, i.e. a high saturation mobility of 7.73  ±  0.44 cm2 V-1 s-1, a sub-threshold swing of 0.27 V dec-1, an on/off ratio of ~108, and a low threshold voltage of 3.10  ±  0.30 V. However, the performance of the TFTs degraded as the film thickness was increased. We further performed positive and negative bias stress tests to examine their electrical stability, and it was noted that the operating behavior of the devices was highly stable. Despite a small number of free charges, the high performance of the ultrathin a-IGZO TFTs was attributed to the small effect of the thickness of the channel, low bulk resistance, the quality of the a-IGZO/SiO2 interface, and high film density.

Soap-film coating: High-speed deposition of multilayer nanofilms

PubMed Central

Zhang, Renyun; Andersson, Henrik A.; Andersson, Mattias; Andres, Britta; Edlund, Håkan; Edström, Per; Edvardsson, Sverker; Forsberg, Sven; Hummelgård, Magnus; Johansson, Niklas; Karlsson, Kristoffer; Nilsson, Hans-Erik; Norgren, Magnus; Olsen, Martin; Uesaka, Tetsu; Öhlund, Thomas; Olin, Håkan

2013-01-01

The coating of thin films is applied in numerous fields and many methods are employed for the deposition of these films. Some coating techniques may deposit films at high speed; for example, ordinary printing paper is coated with micrometre-thick layers of clay at a speed of tens of meters per second. However, to coat nanometre thin films at high speed, vacuum techniques are typically required, which increases the complexity of the process. Here, we report a simple wet chemical method for the high-speed coating of films with thicknesses at the nanometre level. This soap-film coating technique is based on forcing a substrate through a soap film that contains nanomaterials. Molecules and nanomaterials can be deposited at a thickness ranging from less than a monolayer to several layers at speeds up to meters per second. We believe that the soap-film coating method is potentially important for industrial-scale nanotechnology. PMID:23503102

Optimization of the graphical method of Swanepoel for characterization of thin film on substrate specimens from their transmittance spectrum

NASA Astrophysics Data System (ADS)

Minkov, D. A.; Gavrilov, G. M.; Moreno, J. M. D.; Vazquez, C. G.; Marquez, E.

2017-03-01

The accuracy of the popular graphical method of Swanepoel (SGM) for the characterization of a thin film on a substrate specimen from its interference transmittance spectrum depends on the subjective choice of four characterization parameters: the slope of the graph, the order number for the longest wavelength extremum, and the two numbers of the extrema used for the calculation approximations of the average film thickness. Here, an error metric is introduced for estimating the accuracy of SGM characterization. An algorithm is proposed for the optimization of SGM, named the OGM algorithm, based on the minimization of this error metric. Its execution provides optimized values of the four characterization parameters, and the respective computation of the most accurate film characteristics achievable within the framework of SGM. Moreover, substrate absorption is accounted for, unlike in the classical SGM, which is beneficial when using modern UV/visible/NIR spectrophotometers due to the relatively larger amount of absorption in the commonly used glass substrates for wavelengths above 1700 nm. A significant increase in the accuracy of the film characteristics is obtained employing the OGM algorithm compared to the SGM algorithm for two model specimens. Such improvements in accuracy increase with increasing film absorption. The results of the film characterization by the OGM algorithm are presented for two specimens containing RF-magnetron-sputtered a-Si films with disparate film thicknesses. The computed average film thicknesses are within 1.1% of the respective film thicknesses measured by SEM for both films. Achieving such high film characterization accuracy is particularly significant for the film with a computed average thickness of 3934 nm, since we are not aware of any other film with such a large thickness that has been characterized by SGM.

The numerical modelling of falling film thickness flow on horizontal tubes

NASA Astrophysics Data System (ADS)

Hassan, I. A.; Sadikin, A.; Isa, N. Mat

2017-04-01

This paper presents a computational modelling of water falling film flowing over horizontal tubes. The objective of this study is to use numerical predictions for comparing the film thickness along circumferential direction of tube on 2-D CFD models. The results are then validated with a theoretical result in previous literatures. A comprehensive design of 2-D models have been developed according to the real application and actual configuration of the falling film evaporator as well as previous experimental parameters. A computational modelling of the water falling film is presented with the aid of Ansys Fluent software. The Volume of Fluid (VOF) technique is adapted in this analysis since its capabilities of determining the film thickness on tubes surface is highly reliable. The numerical analysis is carried out under influence of ambient pressures at temperature of 27 °C. Three types of CFD numerical models were analyzed in this simulation with inter tube spacing of 30 mm, 20 mm and 10 mm respectively. The use of a numerical simulation tool on water falling film has resulted in a detailed investigation of film thickness. Based on the numerical simulated results, it is found that the average values of water film thickness for each model are 0.53 mm, 0.58 mm, and 0.63 mm.

Controlling the optical parameters of self-assembled silver films with wetting layers and annealing

NASA Astrophysics Data System (ADS)

Ciesielski, Arkadiusz; Skowronski, Lukasz; Trzcinski, Marek; Szoplik, Tomasz

2017-11-01

We investigated the influence of presence of Ni and Ge wetting layers as well as annealing on the permittivity of Ag films with thicknesses of 20, 35 and 65 nm. Most of the research on thin silver films deals with very small (<20 nm) or relatively large (≥50 nm) thicknesses. We studied the transition region (around 30 nm) from charge percolation pathways to fully continuous films and compared the values of optical parameters among silver layers with at least one fixed attribute (thickness, wetting and capping material, post-process annealing). Our study, based on atomic force microscopy, ellipsometric and X-ray photoelectron spectroscopy measurements, shows that utilizing a wetting layer is comparable to increasing the thickness of the silver film. Both operations decrease the roughness-to-thickness ratio, thus decreasing the scattering losses and both narrow the Lorentz-shaped interband transition peak. However, while increasing silver thickness increases absorption on the free carriers, the use of wetting layers influences the self-assembled internal structure of silver films in such a way, that the free carrier absorption decreases. Wetting layers also introduce additional contributions from effects like segregation or diffusion, which evolve in time and due to annealing.

The Effect of Film Thickness on the Gas Sensing Properties of Ultra-Thin TiO2 Films Deposited by Atomic Layer Deposition

PubMed Central

Wilson, Rachel L.; Blackman, Christopher S.; Carmalt, Claire J.; Stanoiu, Adelina; Di Maggio, Francesco

2018-01-01

Analyte sensitivity for gas sensors based on semiconducting metal oxides should be highly dependent on the film thickness, particularly when that thickness is on the order of the Debye length. This thickness dependence has previously been demonstrated for SnO2 and inferred for TiO2. In this paper, TiO2 thin films have been prepared by Atomic Layer Deposition (ALD) using titanium isopropoxide and water as precursors. The deposition process was performed on standard alumina gas sensor platforms and microscope slides (for analysis purposes), at a temperature of 200 °C. The TiO2 films were exposed to different concentrations of CO, CH4, NO2, NH3 and SO2 to evaluate their gas sensitivities. These experiments showed that the TiO2 film thickness played a dominant role within the conduction mechanism and the pattern of response for the electrical resistance towards CH4 and NH3 exposure indicated typical n-type semiconducting behavior. The effect of relative humidity on the gas sensitivity has also been demonstrated. PMID:29494504

Structural and optical properties of ZnO thin films prepared by RF sputtering at different thicknesses

NASA Astrophysics Data System (ADS)

Hammad, Ahmed H.; Abdel-wahab, M. Sh.; Vattamkandathil, Sajith; Ansari, Akhalakur Rahman

2018-07-01

Hexagonal nanocrystallites of ZnO in the form of thin films were prepared by radio frequency sputtering technique. X-ray diffraction analysis reveals two prominent diffraction planes (002) and (103) at diffraction angles around 34.3 and 62.8°, respectively. The crystallite size increases through (103) plane from 56.1 to 64.8 Å as film thickness changed from 31 nm up to 280 nm while crystallites growth through (002) increased from 124 to 136 Å as film thickness varies from 31 to 107 nm and dropped to 115.8 Å at thickness 280 nm. The particle shape changes from spherical to longitudinal form. The particle size is 25 nm for films of thickness below 107 nm and increases at higher thicknesses (134 and 280 nm) from 30 to 40 nm, respectively. Optical band gap is deduced to be direct with values varied from 3.22 to 3.28 eV and the refractive index are evaluated based on the optical band values according to Moss, Ravindra-Srivastava, and Dimitrov-Sakka models. All refractive index models gave values around 2.3.

[Experimental Methods and Result Analysis of a Variety of Spectral Reflectance Properties of the Thin Oil Film].

PubMed

Ye, Zhou; Liu, Li; Wei, Chuan-xin; Gu, Qun; An, Ping-ao; Zhao, Yue-jiao; Yin, Da-yi

2015-06-01

In order to analysis the oil spill situation based on the obtained data in airborne aerial work, it's needed to get the spectral reflectance characteristics of the oil film of different oils and thickness as support and to select the appropriate operating band. An experiment is set up to measure the reflectance spectroscopy from ultraviolet to near-infrared for the film of five target samples, which means petrol, diesel, lubricating oil, kerosene and fossil, using spectral measurement device. The result is compared with the reflectance spectra of water in the same experimental environment, which shows that the spectral reflection characteristics of the oil film are related to the thickness and the type of the oil film. In case of the same thickness, the spectral reflectance curve of different types of film is far different, and for the same type of film, the spectral reflectance curve changes accordingly with the change of film thickness, therefore in terms of the single film, different film thickness can be distinguished by reflectance curves. It also shows that in terms of the same film thickness, the reflectance of diesel, kerosene, lubricants reaches peak around 380 nm wavelength, obviously different from the reflectance of water, and that the reflectance of crude oil is far less than that of water in more than 340 nm wavelength, and the obtained reflection spectrum can be used to distinguish between different types of oil film to some extent. The experiment covers main types of spilled oil, with data comprehensively covering commonly used detect spectral bands, and quantitative description of the spectral reflectance properties of film. It provides comprehensive theoretical and data support for the selection of airborne oil spill detection working band and the detection and analysis of water-surface oil spill.

Track membranes based on a 20-μm-thick polyethylene terephthalate film obtained with a beam of argon ions having a range shorter than the film thickness

NASA Astrophysics Data System (ADS)

Kudoyarov, M. F.; Kozlovskii, M. A.; Patrova, M. Ya.; Potokin, I. L.; Ankudinov, A. V.

2016-07-01

The possibility of performing an energy-efficient variant of irradiation of 20-μm-thick polyethylene terephthalate films to obtain track membranes was considered. Irradiation was done on both sides of a film with a beam of 53.4-MeV Ar+8 ions having energy insufficient for a through track to be formed. The characteristics of the resulting track membrane samples were studied. It was found that these membranes can be used in some cases as a basis for fabrication of composite gas-separating membranes.

Measurement of two-dimensional thickness of micro-patterned thin film based on image restoration in a spectroscopic imaging reflectometer.

PubMed

Kim, Min-Gab; Kim, Jin-Yong

2018-05-01

In this paper, we introduce a method to overcome the limitation of thickness measurement of a micro-patterned thin film. A spectroscopic imaging reflectometer system that consists of an acousto-optic tunable filter, a charge-coupled-device camera, and a high-magnitude objective lens was proposed, and a stack of multispectral images was generated. To secure improved accuracy and lateral resolution in the reconstruction of a two-dimensional thin film thickness, prior to the analysis of spectral reflectance profiles from each pixel of multispectral images, the image restoration based on an iterative deconvolution algorithm was applied to compensate for image degradation caused by blurring.

Evaluating nanoscale ultra-thin metal films by means of lateral photovoltaic effect in metal-semiconductor structure.

PubMed

Zheng, Diyuan; Yu, Chongqi; Zhang, Qian; Wang, Hui

2017-12-15

Nanoscale metal-semiconductor (MS) structure materials occupy an important position in semiconductor and microelectronic field due to their abundant physical phenomena and effects. The thickness of metal films is a critical factor in determining characteristics of MS devices. How to detect or evaluate the metal thickness is always a key issue for realizing high performance MS devices. In this work, we propose a direct surface detection by use of the lateral photovoltaic effect (LPE) in MS structure, which can not only measure nanoscale thickness, but also detect the fluctuation of metal films. This method is based on the fact that the output of lateral photovoltaic voltage (LPV) is closely linked with the metal thickness at the laser spot. We believe this laser-based contact-free detection is a useful supplement to the traditional methods, such as AFM, SEM, TEM or step profiler. This is because these traditional methods are always incapable of directly detecting ultra-thin metal films in MS structure materials.

Evaluating nanoscale ultra-thin metal films by means of lateral photovoltaic effect in metal-semiconductor structure

NASA Astrophysics Data System (ADS)

Zheng, Diyuan; Yu, Chongqi; Zhang, Qian; Wang, Hui

2017-12-01

Nanoscale metal-semiconductor (MS) structure materials occupy an important position in semiconductor and microelectronic field due to their abundant physical phenomena and effects. The thickness of metal films is a critical factor in determining characteristics of MS devices. How to detect or evaluate the metal thickness is always a key issue for realizing high performance MS devices. In this work, we propose a direct surface detection by use of the lateral photovoltaic effect (LPE) in MS structure, which can not only measure nanoscale thickness, but also detect the fluctuation of metal films. This method is based on the fact that the output of lateral photovoltaic voltage (LPV) is closely linked with the metal thickness at the laser spot. We believe this laser-based contact-free detection is a useful supplement to the traditional methods, such as AFM, SEM, TEM or step profiler. This is because these traditional methods are always incapable of directly detecting ultra-thin metal films in MS structure materials.

Increased magnetic damping in ultrathin films of Co2FeAl with perpendicular anisotropy

NASA Astrophysics Data System (ADS)

Takahashi, Y. K.; Miura, Y.; Choi, R.; Ohkubo, T.; Wen, Z. C.; Ishioka, K.; Mandal, R.; Medapalli, R.; Sukegawa, H.; Mitani, S.; Fullerton, E. E.; Hono, K.

2017-06-01

We estimated the magnetic damping constant α of Co2FeAl (CFA) Heusler alloy films of different thicknesses with an MgO capping layer by means of time-resolved magneto-optical Kerr effect and ferromagnetic resonance measurements. CFA films with thicknesses of 1.2 nm and below exhibited perpendicular magnetic anisotropy arising from the presence of the interface with MgO. While α increased gradually with decreasing CFA film thickness down to 1.2 nm, it was increased substantially when the thickness was reduced further to 1.0 nm. Based on the microstructure analyses and first-principles calculations, we attributed the origin of the large α in the ultrathin CFA film primarily to the Al deficiency in the CFA layer, which caused an increase in the density of states and thereby in the scatterings of their spins.

In vivo tear film thickness measurement and tear film dynamics visualization using spectral domain OCT and an efficient delay estimator

NASA Astrophysics Data System (ADS)

Aranha dos Santos, Valentin; Schmetterer, Leopold; Gröschl, Martin; Garhofer, Gerhard; Werkmeister, René M.

2016-03-01

Dry eye syndrome is a highly prevalent disease of the ocular surface characterized by an instability of the tear film. Traditional methods used for the evaluation of tear film stability are invasive or show limited repeatability. Here we propose a new noninvasive approach to measure tear film thickness using an efficient delay estimator and ultrahigh resolution spectral domain OCT. Silicon wafer phantoms with layers of known thickness and group index were used to validate the estimator-based thickness measurement. A theoretical analysis of the fundamental limit of the precision of the estimator is presented and the analytical expression of the Cramér-Rao lower bound (CRLB), which is the minimum variance that may be achieved by any unbiased estimator, is derived. The performance of the estimator against noise was investigated using simulations. We found that the proposed estimator reaches the CRLB associated with the OCT amplitude signal. The technique was applied in vivo in healthy subjects and dry eye patients. Series of tear film thickness maps were generated, allowing for the visualization of tear film dynamics. Our results show that the central tear film thickness precisely measured in vivo with a coefficient of variation of about 0.65% and that repeatable tear film dynamics can be observed. The presented method has the potential of being an alternative to breakup time measurements (BUT) and could be used in clinical setting to study patients with dry eye disease and monitor their treatments.

Simultaneous reflectometry and interferometry for measuring thin-film thickness and curvature

NASA Astrophysics Data System (ADS)

Arends, A. A.; Germain, T. M.; Owens, J. F.; Putnam, S. A.

2018-05-01

A coupled reflectometer-interferometer apparatus is described for thin-film thickness and curvature characterization in the three-phase contact line region of evaporating fluids. Validation reflectometry studies are provided for Au, Ge, and Si substrates and thin-film coatings of SiO2 and hydrogel/Ti/SiO2. For interferometry, liquid/air and solid/air interferences are studied, where the solid/air samples consisted of glass/air/glass wedges, cylindrical lenses, and molded polydimethylsiloxane lenses. The liquid/air studies are based on steady-state evaporation experiments of water and isooctane on Si and SiO2/Ti/SiO2 wafers. The liquid thin-films facilitate characterization of both (i) the nano-scale thickness of the absorbed fluid layer and (ii) the macro-scale liquid meniscus thickness, curvature, and curvature gradient profiles. For our validation studies with commercial lenses, the apparatus is shown to measure thickness profiles within 4.1%-10.8% error.

Direct synthesis and characterization of optically transparent conformal zinc oxide nanocrystalline thin films by rapid thermal plasma CVD

NASA Astrophysics Data System (ADS)

Pedersen, Joachim D.; Esposito, Heather J.; Teh, Kwok Siong

2011-10-01

We report a rapid, self-catalyzed, solid precursor-based thermal plasma chemical vapor deposition process for depositing a conformal, nonporous, and optically transparent nanocrystalline ZnO thin film at 130 Torr (0.17 atm). Pure solid zinc is inductively heated and melted, followed by ionization by thermal induction argon/oxygen plasma to produce conformal, nonporous nanocrystalline ZnO films at a growth rate of up to 50 nm/min on amorphous and crystalline substrates including Si (100), fused quartz, glass, muscovite, c- and a-plane sapphire (Al2O3), gold, titanium, and polyimide. X-ray diffraction indicates the grains of as-deposited ZnO to be highly textured, with the fastest growth occurring along the c-axis. The individual grains are observed to be faceted by (103) planes which are the slowest growth planes. ZnO nanocrystalline films of nominal thicknesses of 200 nm are deposited at substrate temperatures of 330°C and 160°C on metal/ceramic substrates and polymer substrates, respectively. In addition, 20-nm- and 200-nm-thick films are also deposited on quartz substrates for optical characterization. At optical spectra above 375 nm, the measured optical transmittance of a 200-nm-thick ZnO film is greater than 80%, while that of a 20-nm-thick film is close to 100%. For a 200-nm-thick ZnO film with an average grain size of 100 nm, a four-point probe measurement shows electrical conductivity of up to 910 S/m. Annealing of 200-nm-thick ZnO films in 300 sccm pure argon at temperatures ranging from 750°C to 950°C (at homologous temperatures between 0.46 and 0.54) alters the textures and morphologies of the thin film. Based on scanning electron microscope images, higher annealing temperatures appear to restructure the ZnO nanocrystalline films to form nanorods of ZnO due to a combination of grain boundary diffusion and bulk diffusion. PACS: films and coatings, 81.15.-z; nanocrystalline materials, 81.07.Bc; II-VI semiconductors, 81.05.Dz.

Measurement of thickness of film deposited on the plasma-facing wall in the QUEST tokamak by colorimetry.

PubMed

Wang, Z; Hanada, K; Yoshida, N; Shimoji, T; Miyamoto, M; Oya, Y; Zushi, H; Idei, H; Nakamura, K; Fujisawa, A; Nagashima, Y; Hasegawa, M; Kawasaki, S; Higashijima, A; Nakashima, H; Nagata, T; Kawaguchi, A; Fujiwara, T; Araki, K; Mitarai, O; Fukuyama, A; Takase, Y; Matsumoto, K

2017-09-01

After several experimental campaigns in the Kyushu University Experiment with Steady-state Spherical Tokamak (QUEST), the originally stainless steel plasma-facing wall (PFW) becomes completely covered with a deposited film composed of mixture materials, such as iron, chromium, carbon, and tungsten. In this work, an innovative colorimetry-based method was developed to measure the thickness of the deposited film on the actual QUEST wall. Because the optical constants of the deposited film on the PFW were position-dependent and the extinction coefficient k 1 was about 1.0-2.0, which made the probing light not penetrate through some thick deposited films, the colorimetry method developed can only provide a rough value range of thickness of the metal-containing film deposited on the actual PFW in QUEST. However, the use of colorimetry is of great benefit to large-area inspections and to radioactive materials in future fusion devices that will be strictly prohibited from being taken out of the limited area.

Fused-Ring Acceptors with Asymmetric Side Chains for High-Performance Thick-Film Organic Solar Cells.

PubMed

Feng, Shiyu; Zhang, Cai'e; Liu, Yahui; Bi, Zhaozhao; Zhang, Zhe; Xu, Xinjun; Ma, Wei; Bo, Zhishan

2017-11-01

A kind of new fused-ring electron acceptor, IDT-OB, bearing asymmetric side chains, is synthesized for high-efficiency thick-film organic solar cells. The introduction of asymmetric side chains can increase the solubility of acceptor molecules, enable the acceptor molecules to pack closely in a dislocated way, and form favorable phase separation when blended with PBDB-T. As expected, PBDB-T:IDT-OB-based devices exhibit high and balanced hole and electron mobility and give a high power conversion efficiency (PCE) of 10.12%. More importantly, the IDT-OB-based devices are not very sensitive to the film thickness, a PCE of 9.17% can still be obtained even the thickness of active layer is up to 210 nm. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Thermal conductivity model for nanoporous thin films

NASA Astrophysics Data System (ADS)

Huang, Congliang; Zhao, Xinpeng; Regner, Keith; Yang, Ronggui

2018-03-01

Nanoporous thin films have attracted great interest because of their extremely low thermal conductivity and potential applications in thin thermal insulators and thermoelectrics. Although there are some numerical and experimental studies about the thermal conductivity of nanoporous thin films, a simplified model is still needed to provide a straightforward prediction. In this paper, by including the phonon scattering lifetimes due to film thickness boundary scattering, nanopore scattering and the frequency-dependent intrinsic phonon-phonon scattering, a fitting-parameter-free model based on the kinetic theory of phonon transport is developed to predict both the in-plane and the cross-plane thermal conductivities of nanoporous thin films. With input parameters such as the lattice constants, thermal conductivity, and the group velocity of acoustic phonons of bulk silicon, our model shows a good agreement with available experimental and numerical results of nanoporous silicon thin films. It illustrates that the size effect of film thickness boundary scattering not only depends on the film thickness but also on the size of nanopores, and a larger nanopore leads to a stronger size effect of the film thickness. Our model also reveals that there are different optimal structures for getting the lowest in-plane and cross-plane thermal conductivities.

Characterization of corn starch-based edible film incorporated with nutmeg oil nanoemulsion

NASA Astrophysics Data System (ADS)

Aisyah, Y.; Irwanda, L. P.; Haryani, S.; Safriani, N.

2018-05-01

This study aimed to formulate corn starch-based edible films by varying concentrations of nutmeg oil nanoemulsion and glycerol. Furthermore, the resulted edible film was characterized by its mechanical properties and antibacterial activity. The edible films were made using corn starch, nutmeg oil nanoemulsion, and glycerol. Concentrations of nutmeg oil nanoemulsion were 1%, 2%, and 3%, and glycerol were 10%, 20%, and 30%. Results indicated that the increase of nutmeg oil nanoemulsion concentration could increase the film thickness. However, the nutmeg oil had no effect on the film tensile strength and elongation. Glycerol had no effect on the film tensile strength. The best treatment of the corn starch-based film was obtained by adding 1% of nutmeg oil and 30% of glycerol, yielding a tensile strength of 18.73 Kgf/mm2, elongation of 69.44% and thickness of 0.0840. The addition of 1% nutmeg oil nanoemulsion has been able to inhibit the growth of two types of the bacteria tested (Staphylococcus aureus and Escherichia coli).

Unusual Stiffening and Elastic Response of Polyisobutylene Nanometric Thin Films

NASA Astrophysics Data System (ADS)

Yoon, Heedong; Wigham, Caleb; McKenna, Gregory

The TTU bubble inflation technique was used to study the elastic response and unusual stiffening behavior of nanometirc polyisobutylene (PIB) films. Mechanical properties and surface tension of PIB films were measured through the strain-stress response for film thicknesses ranging from 13 nm to 126 nm. The tests were performed at room temperature, far above the glass transition temperature of PIB. It is found that the stiffening increases with decreasing film thickness, while the surface tension is independent of the film thickness. Similar to the prior bubble inflation measurements in polymeric thin films, the thickness dependence of the stiffening followed a power law behavior in this case of Ds h1.5. These results are consistent with the Ngai et al proposition that rubbery stiffening is related to the separation of the α relaxation and Rouse modes. In addition, we compare stiffening index (S) with fragility (m) based on our prior observation that the S follows a linear behavior with dynamic m. Unlike other polymeric materials seen in prior bubble inflation measurements, the S of PIB does not follow the linear behavior with m.

Enhancement in microstructural and optoelectrical properties of thermally evaporated CdTe films for solar cells

NASA Astrophysics Data System (ADS)

Chander, Subhash; Dhaka, M. S.

2018-03-01

The optimization of microstructural and optoelectrical properties of a thin layer is an important step prior device fabrication process, so an enhancement in these properties of thermally evaporated CdTe thin films is reported in this communication. The films having thickness 450 nm and 850 nm were deposited on thoroughly cleaned glass and indium tin oxide (ITO) substrates followed by annealing at 450 °C in air atmosphere. These films were characterized for microstructural and optoelectrical properties employing X-ray diffraction, scanning electron microscopy coupled with energy-dispersive spectroscopy, UV-Vis spectrophotometer and source meter. The films found to be have zinc-blende cubic structure with preferred reflection (111) while the crystallographic parameters and direct energy band gap are strongly influenced by the film thickness. The surface morphology studies show that the films are uniform, smooth, homogeneous and nearly dense-packed as well as free from voids and pitfalls as where elemental analysis revealed the presence of Cd and Te element in the deposited films. The electrical analysis showed linear behavior of current with voltage while conductivity is decreased for higher thickness. The results show that the microstructural and optoelectrical properties of CdTe thin layer could be enhanced by varying thickness and films having higher thickness might be processed as promising absorber thin layer to the CdTe-based solar cells.

An examination of the challenges influencing science instruction in Florida elementary classrooms

NASA Astrophysics Data System (ADS)

North, Stephanie Gwinn

It has been shown that the mechanical properties of thin films tend to differ from their bulk counterparts. Specifically, the bulge and microtensile testing of thin films used in MEMS have revealed that these films demonstrate an inverse relationship between thickness and strength. A film dimension is not a material property, but it evidently does affect the mechanical performance of materials at very small thicknesses. A hypothetical explanation for this phenomenon is that as the thickness dimension of the film decreases, it is statistically less likely that imperfections exist in the material. It would require a very small thickness (or volume) to limit imperfections in a material, which is why this phenomenon is seen in films with thicknesses on the order of 100 nm to a few microns. Another hypothesized explanation is that the surface tension that exists in bulk material also exists in thin films but has a greater impact at such a small scale. The goal of this research is to identify a theoretical prediction of the strength of thin films based on its microstructural properties such as grain size and film thickness. This would minimize the need for expensive and complicated tests such as the bulge and microtensile tests. In this research, data was collected from the bulge and microtensile testing of copper, aluminum, gold, and polysilicon free-standing thin films. Statistical testing of this data revealed a definitive inverse relationship between thickness and strength, as well as between grain size and strength, as expected. However, due to a lack of a standardized method for either test, there were significant variations in the data. This research compares and analyzes the methods used by other researchers to develop a suggested set of instructions for a standardized bulge test and standardized microtensile test. The most important parameters to be controlled in each test were found to be strain rate, temperature, film deposition method, film length, and strain measurement.

Angular multiplexing holograms of four images recorded on photopolymer films with recording-film-thickness-dependent holographic characteristics

NASA Astrophysics Data System (ADS)

Osabe, Keiichi; Kawai, Kotaro

2017-03-01

In this study, angular multiplexing hologram recording photopolymer films were studied experimentally. The films contained acrylamide as a monomer, eosin Y as a sensitizer, and triethanolamine as a promoter in a polyvinyl alcohol matrix. In order to determine the appropriate thickness of the photopolymer films for angular multiplexing, photopolymer films with thicknesses of 29-503 μm were exposed to two intersecting beams of a YVO laser at a wavelength of 532 nm to form a holographic grating with a spatial frequency of 653 line/mm. The diffraction efficiencies as a function of the incident angle of reconstruction were measured. A narrow angular bandwidth and high diffraction efficiency are required for angular multiplexing; hence, we define the Q value, which is the diffraction efficiency divided by half the bandwidth. The Q value of the films depended on the thickness of the films, and was calculated based on the measured diffraction efficiencies. The Q value of a 297-μm-thick film was the highest of the all films. Therefore, the angular multiplexing experiments were conducted using 300-μm-thick films. In the angular multiplexing experiments, the object beam transmitted by a square aperture was focused by a Fourier transform lens and interfered with a reference beam. The maximum order of angular multiplexing was four. The signal intensity that corresponds to the squared-aperture transmission and the noise intensity that corresponds to transmission without the square aperture were measured. The signal intensities decreased as the order of angular multiplexing increased, and the noise intensities were not dependent on the order of angular multiplexing.

Microstructures and growth mechanisms of GaN films epitaxially grown on AlN/Si hetero-structures by pulsed laser deposition at different temperatures.

PubMed

Wang, Wenliang; Yang, Weijia; Lin, Yunhao; Zhou, Shizhong; Li, Guoqiang

2015-11-13

2 inch-diameter GaN films with homogeneous thickness distribution have been grown on AlN/Si(111) hetero-structures by pulsed laser deposition (PLD) with laser rastering technique. The surface morphology, crystalline quality, and interfacial property of as-grown GaN films are characterized in detail. By optimizing the laser rastering program, the ~300 nm-thick GaN films grown at 750 °C show a root-mean-square (RMS) thickness inhomogeneity of 3.0%, very smooth surface with a RMS surface roughness of 3.0 nm, full-width at half-maximums (FWHMs) for GaN(0002) and GaN(102) X-ray rocking curves of 0.7° and 0.8°, respectively, and sharp and abrupt AlN/GaN hetero-interfaces. With the increase in the growth temperature from 550 to 850 °C, the surface morphology, crystalline quality, and interfacial property of as-grown ~300 nm-thick GaN films are gradually improved at first and then decreased. Based on the characterizations, the corresponding growth mechanisms of GaN films grown on AlN/Si hetero-structures by PLD with various growth temperatures are hence proposed. This work would be beneficial to understanding the further insight of the GaN films grown on Si(111) substrates by PLD for the application of GaN-based devices.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wu, Ruikang; Hu, Run, E-mail: hurun@hust.edu.cn, E-mail: luoxb@hust.edu.cn; Luo, Xiaobing, E-mail: hurun@hust.edu.cn, E-mail: luoxb@hust.edu.cn

In this study, we developed a first-principle-based full-dispersion Monte Carlo simulation method to study the anisotropic phonon transport in wurtzite GaN thin film. The input data of thermal properties in MC simulations were calculated based on the first-principle method. The anisotropy of thermal conductivity in bulk wurtzite GaN is found to be strengthened by isotopic scatterings and reduced temperature, and the anisotropy reaches 40.08% for natural bulk GaN at 100 K. With the GaN thin film thickness decreasing, the anisotropy of the out-of-plane thermal conductivity is heavily reduced due to both the ballistic transport and the less importance of the low-frequencymore » phonons with anisotropic group velocities. On the contrary, it is observed that the in-plane thermal conductivity anisotropy of the GaN thin film is strengthened by reducing the film thickness. And the anisotropy reaches 35.63% when the natural GaN thin film thickness reduces to 50 nm at 300 K with the degree of specularity being zero. The anisotropy is also improved by increasing the surface roughness of the GaN thin film.« less

Thick-film nickel-metal-hydride battery based on porous ceramic substrates

NASA Astrophysics Data System (ADS)

Do, Jing-Shan; Yu, Sen-Hao; Cheng, Suh-Fen

Nickel-metal-hydride (Ni-MH) batteries are prepared with thick-film and thin-film technologies based on porous ceramic substrates. The porosity and the mean pore diameter of BP ceramic substrates prepared from the argils increases from 19.81% and 0.0432 μm to 29.81% and 0.224 μm, respectively, upon increasing the ethyl cellulose content in the BP argil from 0 to 0.79%. The pore diameter of Al 2O 3 substrates prepared from Al 2O 3 powder is mainly distributed in the range 0.01-0.5 μm. The distribution of the pore diameters of BP ceramic substrates lies in two ranges, namely: 0.04-2 μm and 10-300 μm. Using BP ceramic plates and Al 2O 3 plates as substrates to fabricate thick-film Ni-MH batteries, the optimal electroactive material utilization in the batteries is 77.0 and 71.1%, respectively. On increasing the screen-printing number for preparing the cathode (Ni(OH) 2) from 1 to 3, the discharge capacity of the thick-film battery increases from 0.2917 to 0.7875 mAh, and the utilization in the battery decreases from 71.0 to 53.0%.

Use of buffy coat thick films in detecting malaria parasites in patients with negative conventional thick films.

PubMed

Duangdee, Chatnapa; Tangpukdee, Noppadon; Krudsood, Srivicha; Wilairatana, Polrat

2012-04-01

To determine the frequency of malaria parasite detection from the buffy coat blood films by using capillary tube in falciparum malaria patients with negative conventional thick films. Thirty six uncomplicated falciparum malaria patients confirmed by conventional thick and thin films were included in the study. The patients were treated with artemisinin combination therapy at Hospital for Tropical Diseases, Bangkok, Thailand for 28 day. Fingerpricks for conventional blood films were conducted every 6 hours until negative parasitemia, then daily fingerpricks for parasite checks were conducted until the patients were discharged from hospital. Blood samples were also concurrently collected in 3 heparinized capillary tubes at the same time of fingerpricks for conventional blood films when the prior parasitemia was negative on thin films and parasitemia was lower than 50 parasites/200 white blood cells by thick film. The first negative conventional thick films were compared with buffy coat thick films for parasite identification. Out of 36 patients with thick films showing negative for asexual forms of parasites, buffy coat films could detect remaining 10 patients (27.8%) with asexual forms of Plasmodium falciparum. The study shows that buffy coat thick films are useful and can detect malarial parasites in 27.8% of patients whose conventional thick films show negative parasitemia.

An In-situ Real-Time Optical Fiber Sensor Based on Surface Plasmon Resonance for Monitoring the Growth of TiO2 Thin Films

PubMed Central

Tsao, Yu-Chia; Tsai, Woo-Hu; Shih, Wen-Ching; Wu, Mu-Shiang

2013-01-01

An optical fiber sensor based on surface plasmon resonance (SPR) is proposed for monitoring the thickness of deposited nano-thin films. A side-polished multimode SPR optical fiber sensor with an 850 nm-LD is used as the transducing element for real-time monitoring of the deposited TiO2 thin films. The SPR optical fiber sensor was installed in the TiO2 sputtering system in order to measure the thickness of the deposited sample during TiO2 deposition. The SPR response declined in real-time in relation to the growth of the thickness of the TiO2 thin film. Our results show the same trend of the SPR response in real-time and in spectra taken before and after deposition. The SPR transmitted intensity changes by approximately 18.76% corresponding to 50 nm of deposited TiO2 thin film. We have shown that optical fiber sensors utilizing SPR have the potential for real-time monitoring of the SPR technology of nanometer film thickness. The compact size of the SPR fiber sensor enables it to be positioned inside the deposition chamber, and it could thus measure the film thickness directly in real-time. This technology also has potential application for monitoring the deposition of other materials. Moreover, in-situ real-time SPR optical fiber sensor technology is in inexpensive, disposable technique that has anti-interference properties, and the potential to enable on-line monitoring and monitoring of organic coatings. PMID:23881144

An in-situ real-time optical fiber sensor based on surface plasmon resonance for monitoring the growth of TiO2 thin films.

PubMed

Tsao, Yu-Chia; Tsai, Woo-Hu; Shih, Wen-Ching; Wu, Mu-Shiang

2013-07-23

An optical fiber sensor based on surface plasmon resonance (SPR) is proposed for monitoring the thickness of deposited nano-thin films. A side-polished multimode SPR optical fiber sensor with an 850 nm-LD is used as the transducing element for real-time monitoring of the deposited TiO2 thin films. The SPR optical fiber sensor was installed in the TiO2 sputtering system in order to measure the thickness of the deposited sample during TiO2 deposition. The SPR response declined in real-time in relation to the growth of the thickness of the TiO2 thin film. Our results show the same trend of the SPR response in real-time and in spectra taken before and after deposition. The SPR transmitted intensity changes by approximately 18.76% corresponding to 50 nm of deposited TiO2 thin film. We have shown that optical fiber sensors utilizing SPR have the potential for real-time monitoring of the SPR technology of nanometer film thickness. The compact size of the SPR fiber sensor enables it to be positioned inside the deposition chamber, and it could thus measure the film thickness directly in real-time. This technology also has potential application for monitoring the deposition of other materials. Moreover, in-situ real-time SPR optical fiber sensor technology is in inexpensive, disposable technique that has anti-interference properties, and the potential to enable on-line monitoring and monitoring of organic coatings.

Liquid crystals as on-demand, variable thickness targets for intense laser applications

NASA Astrophysics Data System (ADS)

Poole, Patrick L.; Andereck, C. David; Schumacher, Douglass W.

2014-10-01

Laser-based ion acceleration is currently studied for its applications to advanced imaging and cancer therapy, among others. Targets for these and other high-intensity laser experiments are often small metallic foils with few to sub-micron thicknesses, where the thickness determines the physics of the dominant acceleration mechanism. We have developed liquid crystal films that preserve the planar target geometry advantageous to ion acceleration schemes while providing on-demand thickness variation between 50 and 5000 nm. This thickness control is obtained in part by varying the temperature at which films are formed, which governs the phase (and hence molecular ordering) of the liquid crystal material. Liquid crystals typically have vapor pressures well below the 10-6 Torr operating pressures of intense laser target chambers, and films formed in air maintain their thickness during chamber evacuation. Additionally, the minute volume that comprises each film makes the cost of each target well below one cent, in stark contrast to many standard solid targets. We will discuss the details of liquid crystal film control and formation, as well as characterization experiments performed at the Scarlet laser facility. This work was performed with support from DARPA and NNSA.

Synthesis and characterization of thick PZT films via sol-gel dip coating method

NASA Astrophysics Data System (ADS)

Shakeri, Amid; Abdizadeh, Hossein; Golobostanfard, Mohammad Reza

2014-09-01

Thick films of lead zirconate titanate (PZT) offer possibilities for micro-electro-mechanical systems such as high frequency ultrasonic transducers. In this paper, crack-free thick films of PZT have been prepared up to 45 μm thickness via modified sol-gel dip coating method. In this procedure, acetic acid-alcoholic based sol is used by applying diethanolamine (DEA) and deionized water as additives. The effects of DEA and water on the crystal structure and surface morphology of the films are investigated. The mechanisms of acetic acid and DEA complexations are introduced by using FTIR spectrometer which illustrates suitable substitution of complexing agents with alkoxide groups. DEA/(Ti + Zr) = 0.5 or water/(Ti + Zr) = 0.5 are determined as the optimum molar ratio of additives, which lead to the formation of almost pure perovskite phase with the tetragonal lattice parameters of ct = 4.16 Ǻ and at = 4.02 Ǻ and a distortion of 2%. Values of remanent polarization and dielectric constant of 7.8 μC cm-2 and 1630 were obtained for 45 μm thick films, respectively.

Preparation and characterization of semi-refined kappa carrageenan-based edible film for nano coating application on minimally processed food

NASA Astrophysics Data System (ADS)

Manuhara, Godras Jati; Praseptiangga, Danar; Muhammad, Dimas Rahadian Aji; Maimuni, Bawani Hindami

2016-02-01

Shorter and easier processing of semi-refined kappa carrageenan extracted from Euchema cottonii red seaweed result in cheaper price of the polysaccharide. In this study, edible film was prepared from the semi-refined carrageenan without any salt addition. The effect of the carrageenan concentration (1.0, 1.5, and 2.0% w/v) on physical and mechanical properties of the edible film was studied. Edible film thickness and tensile strength increased but elongation at break and water vapor transmission rate (WVTR) decreased as the concentration increased. Based on the characteristic of the edible film, formulation using 2% carrageenan was recommended. The edible film demonstrated the characteristic as follow: 0.054 mm thickness, 21.14 MPa tensile strength, 12.36% elongation at break, and 9.56 g/m2.hour WVTR. It was also noted the carrageenan-based edible film indicated potential physical and mechanical characteristics for nano coating applications on minimally processed food.

Solvent-induced changes in PEDOT:PSS films for organic electrochemical transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Shiming; Kumar, Prajwal; Nouas, Amel Sarah

2015-01-01

Organic electrochemical transistors based on the conducting polymer poly(3,4-ethylenedioxythiophene) doped with poly(styrenesulfonate) (PEDOT:PSS) are of interest for several bioelectronic applications. In this letter, we investigate the changes induced by immersion of PEDOT:PSS films, processed by spin coating from different mixtures, in water and other solvents of different polarities. We found that the film thickness decreases upon immersion in polar solvents, while the electrical conductivity remains unchanged. The decrease in film thickness is minimized via the addition of a cross-linking agent to the mixture used for the spin coating of the films.

Structural phase diagram for ultra-thin epitaxial Fe 3O 4 / MgO(0 01) films: thickness and oxygen pressure dependence

DOE Office of Scientific and Technical Information (OSTI.GOV)

Alraddadi, S.; Hines, W.; Yilmaz, T.

2016-02-19

A systematic investigation of the thickness and oxygen pressure dependence for the structural properties of ultra-thin epitaxial magnetite (Fe 3O 4) films has been carried out; for such films, the structural properties generally differ from those for the bulk when the thickness ≤10 nm. Iron oxide ultra-thin films with thicknesses varying from 3 nm to 20 nm were grown on MgO (001) substrates using molecular beam epitaxy under different oxygen pressures ranging from 1 × 10 -7 torr to 1 × 10 -5 torr. The crystallographic and electronic structures of the films were characterized using low energy electron diffraction (LEED)more » and x-ray photoemission spectroscopy (XPS), respectively. Moreover, the quality of the epitaxial Fe 3O 4 ultra-thin films was judged by magnetic measurements of the Verwey transition, along with complementary XPS spectra. We observed that under the same growth conditions the stoichiometry of ultra-thin films under 10 nm transforms from the Fe 3O 4 phase to the FeO phase. In this work, a phase diagram based on thickness and oxygen pressure has been constructed to explain the structural phase transformation. It was found that high-quality magnetite films with thicknesses ≤20 nm formed within a narrow range of oxygen pressure. An optimal and controlled growth process is a crucial requirement for the accurate study of the magnetic and electronic properties for ultra-thin Fe 3O 4 films. Furthermore, these results are significant because they may indicate a general trend in the growth of other oxide films, which has not been previously observed or considered.« less

Surface and magnetic characteristics of Ni-Mn-Ga/Si (100) thin film

NASA Astrophysics Data System (ADS)

Kumar, S. Vinodh; Raja, M. Manivel; Pandi, R. Senthur; Pandyan, R. Kodi; Mahendran, M.

2016-05-01

Polycrystalline Ni-Mn-Ga thin films have been deposited on Si (100) substrate with different film thickness. The influence of film thickness on the phase structure and magnetic domain of the films has been examined by scanning electron microscope, atomic force microscopy and magnetic force microscopy. Analysis of structural parameters indicates that the film at lower thickness exhibits the coexistence of both austenite and martensite phase, whereas at higher thickness L12 cubic non magnetic phase is noticed. The grains size and the surface roughness increase along with the film thickness and attain the maximum of 45 nm and 34.96 nm, respectively. At lower film thickness, the magnetic stripe domain is found like maze pattern with dark and bright images, while at higher thickness the absence of stripe domains is observed. The magnetic results reveal that the films strongly depend on their phase structure and microstructure which influence by the film thickness.

Multi-band filter design with less total film thickness for short-wave infrared

NASA Astrophysics Data System (ADS)

Yan, Yung-Jhe; Chien, I.-Pen; Chen, Po-Han; Chen, Sheng-Hui; Tsai, Yi-Chun; Ou-Yang, Mang

2017-08-01

A multi-band pass filter array was proposed and designed for short wave infrared applications. The central wavelength of the multi-band pass filters are located about 905 nm, 950 nm, 1055 nm and 1550 nm. In the simulation of an optical interference band pass filter, high spectrum performance (high transmittance ratio between the pass band and stop band) relies on (1) the index gap between the selected high/low-index film materials, with a larger gap correlated to higher performance, and (2) sufficient repeated periods of high/low-index thin-film layers. When determining high and low refractive index materials, spectrum performance was improved by increasing repeated periods. Consequently, the total film thickness increases rapidly. In some cases, a thick total film thickness is difficult to process in practice, especially when incorporating photolithography liftoff. Actually the maximal thickness of the photoresist being able to liftoff will bound the total film thickness of the band pass filter. For the application of the short wave infrared with the wavelength range from 900nm to 1700nm, silicone was chosen as a high refractive index material. Different from other dielectric materials used in the visible range, silicone has a higher absorptance in the visible range opposite to higher transmission in the short wave infrared. In other words, designing band pass filters based on silicone as a high refractive index material film could not obtain a better spectrum performance than conventional high index materials like TiO2 or Ta2O5, but also its material cost would reduce about half compared to the total film thickness with the conventional material TiO2. Through the simulation and several experimental trials, the total film thickness below 4 um was practicable and reasonable. The fabrication of the filters was employed a dual electric gun deposition system with ion assisted deposition after the lithography process. Repeating four times of lithography and deposition process and black matrix coating, the optical device processes were completed.

Conductivity and local structure in LaNiO3

NASA Astrophysics Data System (ADS)

Fowlie, Jennifer; Gibert, Marta; Tieri, Giulio; Gloter, Alexandre; à+/-Iguez, Jorge; Filippetti, Alessio; Catalano, Sara; Gariglio, Stefano; StéPhan, Odile; Triscone, Jean-Marc

In this study we approach the thickness-dependence of the properties of LaNiO3 films along multiple, complementary avenues: sophisticated ab initio calculations, scanning transmission electron microscopy and electronic transport. Specifically, we find an unexpected maximum in conductivity in films of thickness 6 - 10 unit cells (3 nm) for several series of LaNiO3 films. Ab initio transport based on the detailed crystal structure also reveals a maximum in conductivity at the same thickness. In agreement with the structure obtained from scanning transmission electron microscopy (STEM), our simulated structures reveal that the substrate- and surface-induced distortions lead to three types of local structure (heterointerface, interior-layer, surface). Based on this observation, a 3-element parallel conductor model neatly reproduces the trend of conductivity with thickness. This study addresses the question of how structural distortions at the atomic scale evolve in a thin film under the influence of the substrate and the surface. This topic is key to the understanding of the physics of heterostructures and the design of functional oxides.

Frequency Invariability of (Pb,La)(Zr,Ti)O₃ Antiferroelectric Thick-Film Micro-Cantilevers.

PubMed

An, Kun; Jin, Xuechen; Meng, Jiang; Li, Xiao; Ren, Yifeng

2018-05-13

Micro-electromechanical systems comprising antiferroelectric layers can offer both actuation and transduction to integrated technologies. Micro-cantilevers based on the (Pb 0.97 La 0.02 )(Zr 0.95 Ti 0.05 )O₃ (PLZT) antiferroelectric thick film are fabricated by the micro-nano manufacturing process, to utilize the effect of phase transition induced strain and sharp phase switch of antiferroelectric materials. When micro-cantilevers made of antiferroelectric thick films were driven by sweep voltages, there were two resonant peaks corresponding to the natural frequency shift from 27.8 to 27.0 kHz, before and after phase transition. This is the compensation principle for the PLZT micro-cantilever to tune the natural frequency by the amplitude modulation of driving voltage, rather than of frequency modulation. Considering the natural frequency shift about 0.8 kHz and the frequency tuning ability about 156 Hz/V before the phase transition, this can compensate the frequency shift caused by increasing temperature by tuning only the amplitude of driving voltage, when the ultrasonic micro-transducer made of antiferroelectric thick films works for such a long period. Therefore, antiferroelectric thick films with hetero-structures incorporated into PLZT micro-cantilevers not only require a lower driving voltage (no more than 40 V) than rival bulk piezoelectric ceramics, but also exhibit better performance of frequency invariability, based on the amplitude modulation.

Feasibility Test of a Liquid Film Thickness Sensor on a Flexible Printed Circuit Board Using a Three-Electrode Conductance Method

PubMed Central

Lee, Kyu Byung; Kim, Jong Rok; Park, Goon Cherl; Cho, Hyoung Kyu

2016-01-01

Liquid film thickness measurements under temperature-varying conditions in a two-phase flow are of great importance to refining our understanding of two-phase flows. In order to overcome the limitations of the conventional electrical means of measuring the thickness of a liquid film, this study proposes a three-electrode conductance method, with the device fabricated on a flexible printed circuit board (FPCB). The three-electrode conductance method offers the advantage of applicability under conditions with varying temperatures in principle, while the FPCB has the advantage of usability on curved surfaces and in relatively high-temperature conditions in comparison with sensors based on a printed circuit board (PCB). Two types of prototype sensors were fabricated on an FPCB and the feasibility of both was confirmed in a calibration test conducted at different temperatures. With the calibrated sensor, liquid film thickness measurements were conducted via a falling liquid film flow experiment, and the working performance was tested. PMID:28036000

Exciton-polariton state in nanocrystalline SiC films

NASA Astrophysics Data System (ADS)

Semenov, A. V.; Lopin, A. V.

2016-05-01

We studied the features of optical absorption in the films of nanocrystalline SiC (nc-SiC) obtained on the sapphire substrates by the method of direct ion deposition. The optical absorption spectra of the films with a thickness less than ~500 nm contain a maximum which position and intensity depend on the structure and thickness of the nc-SiC films. The most intense peak at 2.36 eV is observed in the nc-SiC film with predominant 3C-SiC polytype structure and a thickness of 392 nm. Proposed is a resonance absorption model based on excitation of exciton polaritons in a microcavity. In the latter, under the conditions of resonance, there occurs strong interaction between photon modes of light with λph=521 nm and exciton of the 3С polytype with an excitation energy of 2.36 eV that results in the formation of polariton. A mismatch of the frequencies of photon modes of the cavity and exciton explains the dependence of the maximum of the optical absorption on the film thickness.

Goos-Hänchen effect on Si thin films with spherical and cylindrical pores

NASA Astrophysics Data System (ADS)

Olaya, Cherrie May; Garcia, Wilson O.; Hermosa, Nathaniel

2018-02-01

We examine the effects on the spatial and angular Goos-Hanchen (GH) beam shifts of spherical and cylindrical pores in a thin film. In our calculations, a p-polarized light is incident on a 1-μm thick porous silicon (Si) thin film on a Si substrate. The beam shifts are within the measurement range of usual optical detectors. Our results show that a technique based on GH shift can be used to determine the porosity and pore structure of thin films at a given thickness.

Optical investigation of the interaction of an automotive spray and thin films by utilization of a high-pressure spin coater

NASA Astrophysics Data System (ADS)

Seel, Kevin; Reddemann, Manuel A.; Kneer, Reinhold

2018-03-01

Although the interaction of automotive sprays with thin films is of high technical relevance for IC engine applications, fundamental knowledge about underlying physical mechanisms is still limited. This work presents a systematic study of the influence of the film's initial thickness—homogeneously spread over a flat wall before the initial spray impingement—on film surface structures and thickness after the interaction. For this purpose, interferometric film thickness measurements and complementary high-speed visualizations are used. By gradually increasing the initial film thickness on a micrometer scale, a shift from a regime of liquid deposition (increasing film thickness with respect to initial film thickness) to a regime of liquid removal (decreasing film thickness with respect to initial film thickness) is observed at the stagnation zone of the impinging spray. This transition is accompanied by the formation of radially propagating surface waves, transporting liquid away from the stagnation zone. Wavelengths and amplitudes of the surface waves are increased with increasing initial film thickness.

Influence of Thickness on Ethanol Sensing Characteristics of Doctor-bladed Thick Film from Flame-made ZnO Nanoparticles

PubMed Central

Liewhiran, Chaikarn; Phanichphant, Sukon

2007-01-01

ZnO nanoparticles were produced by flame spray pyrolysis (FSP) using zinc naphthenate as a precursor dissolved in toluene/acetonitrile (80/20 vol%). The particle properties were analyzed by XRD, BET, and HR-TEM. The sensing films were produced by mixing the particles into an organic paste composed of terpineol and ethyl cellulose as a vehicle binder and were fabricated by doctor-blade technique with various thicknesses (5, 10, 15 μm). The morphology of the sensing films was analyzed by SEM and EDS analyses. The gas sensing characteristics to ethanol (25-250 ppm) were evaluated as a function of film thickness at 400°C in dry air. The relationship between thickness and ethanol sensing characteristics of ZnO thick film on Al2O3 substrate interdigitated with Au electrodes were investigated. The effects of film thickness, as well as the cracking phenomenon, though, many cracks were observed for thicker sensing films. Crack widths increased with increasing film thickness. The film thickness, cracking and ethanol concentration have significant effect on the sensing characteristics. The sensing characteristics with various thicknesses were compared, showing the tendency of the sensitivity to ethanol decreased with increasing film thickness and response time. The relationship between gas sensing properties and film thickness was discussed on the basis of diffusively and reactivity of the gases inside the oxide films. The thinnest sensing film (5 μm) showed the highest sensitivity and the fastest response time (within seconds).

A novel evaluation strategy for fatigue reliability of flexible nanoscale films

NASA Astrophysics Data System (ADS)

Zheng, Si-Xue; Luo, Xue-Mei; Wang, Dong; Zhang, Guang-Ping

2018-03-01

In order to evaluate fatigue reliability of nanoscale metal films on flexible substrates, here we proposed an effective evaluation way to obtain critical fatigue cracking strain based on the direct observation of fatigue damage sites through conventional dynamic bending testing technique. By this method, fatigue properties and damage behaviors of 930 nm-thick Au films and 600 nm-thick Mo-W multilayers with individual layer thickness 100 nm on flexible polyimide substrates were investigated. Coffin-Manson relationship between the fatigue life and the applied strain range was obtained for the Au films and Mo-W multilayers. The characterization of fatigue damage behaviors verifies the feasibility of this method, which seems easier and more effective comparing with the other testing methods.

Thickness-dependent blue shift in the excitonic peak of conformally grown ZnO:Al on ion-beam fabricated self-organized Si ripples

DOE Office of Scientific and Technical Information (OSTI.GOV)

Basu, T.; Kumar, M.; Som, T., E-mail: tsom@iopb.res.in

2015-09-14

Al-doped ZnO (AZO) thin films of thicknesses 5,10, 15, 20, and 30 nm were deposited on 500 eV argon ion-beam fabricated nanoscale self-organized rippled-Si substrates at room temperature and are compared with similar films deposited on pristine-Si substrates (without ripples). It is observed that morphology of self-organized AZO films is driven by the underlying substrate morphology. For instance, for pristine-Si substrates, a granular morphology evolves for all AZO films. On the other hand, for rippled-Si substrates, morphologies having chain-like arrangement (anisotropic in nature) are observed up to a thickness of 20 nm, while a granular morphology evolves (isotropic in nature) for 30 nm-thick film.more » Photoluminescence studies reveal that excitonic peaks corresponding to 5–15 nm-thick AZO films, grown on rippled-Si templates, show a blue shift of 8 nm and 3 nm, respectively, whereas the peak shift is negligible for 20-nm thick film (with respect to their pristine counter parts). The observed blue shifts are substantiated by diffuse reflectance study and attributed to quantum confinement effect, associated with the size of the AZO grains and their spatial arrangements driven by the anisotropic morphology of underlying rippled-Si templates. The present findings will be useful for making tunable AZO-based light-emitting devices.« less

Thick-film materials for silicon photovoltaic cell manufacture

NASA Technical Reports Server (NTRS)

Field, M. B.

1977-01-01

Thick film technology is applicable to three areas of silicon solar cell fabrication; metallization, junction formation, and coating for protection of screened ohmic contacts, particularly wrap around contacts, interconnection and environmental protection. Both material and process parameters were investigated. Printed ohmic contacts on n- and p-type silicon are very sensitive to the processing parameters of firing time, temperature, and atmosphere. Wrap around contacts are easily achieved by first printing and firing a dielectric over the edge and subsequently applying a low firing temperature conductor. Interconnection of cells into arrays can be achieved by printing and cofiring thick film metal pastes, soldering, or with heat curing conductive epoxies on low cost substrates. Printed (thick) film vitreous protection coatings do not yet offer sufficient optical uniformity and transparency for use on silicon. A sprayed, heat curable SiO2 based resin shows promise of providing both optical matching and environmental protection.

Analysis of thickness dependent on crystallization kinetics in thin isotactic-polysterene films

NASA Astrophysics Data System (ADS)

Khairuddin

2016-11-01

Crystalliaztion kinetics of thin film of Isotactic Polysterene (it-PS) films has been studied. Thin PET films having thickness of 338, 533, 712, 1096, 1473, and 2185 A° were prepared by using spin-cast technique. The it-PS crystals were grown on Linkam-hostage in the temperature range 130-240°C with an interval of 10°C. The crystal growths are measured by optical microscopy in lateral direction. It was found that a substantial thickness dependence on crystallisation rate. The analysis using fitting technique based on theory crystal growth of Lauritzen-Hoffman showed that the fitting technique could not resolve to predict the mechanism controlling the thickness dependence on the rate of crystallisation. The possible reasons were due to the crystallisation rate varies with the type of crystals (smooth, rough, overgrowth terrace), and the crystallisation rate changes with the time of crystallisation.

The layer boundary effect on multi-layer mesoporous TiO 2 film based dye sensitized solar cells

DOE PAGES

Xu, Feng; Zhu, Kai; Zhao, Yixin

2016-10-10

Multi-layer mesoporous TiO 2 prepared by screen printing is widely used for fabrication of high-efficiency dye-sensitized solar cells (DSSCs). Here, we compare the three types of ~10 um thick mesoporous TiO 2 films, which were screen printed as 1-, 2- and 4-layers using the same TiO 2 nanocrystal paste. The layer boundary of the multi-layer mesoporous TiO 2 films was observed in the cross-section SEM. The existence of a layer boundary could reduce the photoelectron diffusion length with the increase of layer number. However, the photoelectron diffusion lengths of the Z907 dye sensitized solar cells based on these different layeredmore » mesoporous TiO 2 films are all longer than the film thickness. Consequently, the photovoltaic performance seems to have little dependence on the layer number of the multi-layer TiO 2 based DSSCs.« less

Universal lab on a smartphone: a research of TiOPc thin film as a light dependence electrode

NASA Astrophysics Data System (ADS)

Lin, PoHan; Hsu, Y. H.; Lee, C. K.

2014-02-01

In this paper, we study the photoconductivity of a polymer-based TiOPc (Titanium Oxide Phthalocyanine) thin-film for the development of a multi-opto-piezoelectric-valve-array. Using a polymer-based TiOPc thin film to serve as the electrode and a structural layer of a piezoelectric polymer, P(VDF-TrFE) poly[(vinylidenefluoride-co-trifluoroethylene], an optical control valve-array could be developed for manipulating multiple microdroplets for the application of digital microfluidic. In this ongoing project, the dependency of the light intensity, thickness, and composition of spin-coated polymer-based TiOPc thin-film was studied. The experimental finding suggested that a 14 to 55 times resistivity change could be achieved by controlling the film thickness to be between 0.9 μm and 1.5 μm with TiOPc concentration of 20% and 30% w/w compositions.

The layer boundary effect on multi-layer mesoporous TiO 2 film based dye sensitized solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xu, Feng; Zhu, Kai; Zhao, Yixin

Multi-layer mesoporous TiO 2 prepared by screen printing is widely used for fabrication of high-efficiency dye-sensitized solar cells (DSSCs). Here, we compare the three types of ~10 um thick mesoporous TiO 2 films, which were screen printed as 1-, 2- and 4-layers using the same TiO 2 nanocrystal paste. The layer boundary of the multi-layer mesoporous TiO 2 films was observed in the cross-section SEM. The existence of a layer boundary could reduce the photoelectron diffusion length with the increase of layer number. However, the photoelectron diffusion lengths of the Z907 dye sensitized solar cells based on these different layeredmore » mesoporous TiO 2 films are all longer than the film thickness. Consequently, the photovoltaic performance seems to have little dependence on the layer number of the multi-layer TiO 2 based DSSCs.« less

Stability of Polymer Ultrathin Films (<7 nm) Made by a Top-Down Approach.

PubMed

Bal, Jayanta Kumar; Beuvier, Thomas; Unni, Aparna Beena; Chavez Panduro, Elvia Anabela; Vignaud, Guillaume; Delorme, Nicolas; Chebil, Mohamed Souheib; Grohens, Yves; Gibaud, Alain

2015-08-25

In polymer physics, the dewetting of spin-coated polystyrene ultrathin films on silicon remains mysterious. By adopting a simple top-down method based on good solvent rinsing, we are able to prepare flat polystyrene films with a controlled thickness ranging from 1.3 to 7.0 nm. Their stability was scrutinized after a classical annealing procedure above the glass transition temperature. Films were found to be stable on oxide-free silicon irrespective of film thickness, while they were unstable (<2.9 nm) and metastable (>2.9 nm) on 2 nm oxide-covered silicon substrates. The Lifshitz-van der Waals intermolecular theory that predicts the domains of stability as a function of the film thickness and of the substrate nature is now fully reconciled with our experimental observations. We surmise that this reconciliation is due to the good solvent rinsing procedure that removes the residual stress and/or the density variation of the polystyrene films inhibiting thermodynamically the dewetting on oxide-free silicon.

Mocvd Growth of Group-III Nitrides on Silicon Carbide: From Thin Films to Atomically Thin Layers

NASA Astrophysics Data System (ADS)

Al Balushi, Zakaria Y.

Group-III nitride semiconductors (AlN, GaN, InN and their alloys) are considered one of the most important class of materials for electronic and optoelectronic devices. This is not limited to the blue light-emitting diode (LED) used for efficient solid-state lighting, but other applications as well, such as solar cells, radar and a variety of high frequency power electronics, which are all prime examples of the technological importance of nitride based wide bandgap semiconductors in our daily lives. The goal of this dissertation work was to explore and establish new growth schemes to improve the structural and optical properties of thick to atomically thin films of group-III nitrides grown by metalorganic chemical vapor deposition (MOCVD) on SiC substrates for future novel devices. The first research focus of this dissertation was on the growth of indium gallium nitride (InGaN). This wide bandgap semiconductor has attracted much research attention as an active layer in LEDs and recently as an absorber material for solar cells. InGaN has superior material properties for solar cells due to its wavelength absorption tunability that nearly covers the entire solar spectrum. This can be achieved by controlling the indium content in thick grown material. Thick InGaN films are also of interest as strain reducing based layers for deep-green and red light emitters. The growth of thick films of InGaN is, however, hindered by several combined problems. This includes poor incorporation of indium in alloys, high density of structural and morphological defects, as well as challenges associated with the segregation of indium in thick films. Overcoming some of these material challenges is essential in order integrate thick InGaN films into future optoelectronics. Therefore, this dissertation research investigated the growth mechanism of InGaN layers grown in the N-polar direction by MOCVD as a route to improve the structural and optical properties of thick InGaN films. The growth of N-polar InGaN by MOCVD is challenging. These challenges arise from the lack of available native substrates suitable for N-polar film growth. As a result, InGaN layers are conventionally grown in the III-polar direction (i.e. III-polar InGaN) and typically grow under considerable amounts of stress on III-polar GaN base layers. While the structure-property relations of thin III-polar InGaN layers have been widely studied in quantum well structures, insight into the growth of thick films and N-polar InGaN layers have been limited. Therefore, this dissertation research compared the growth of both thick III-polar and N-polar InGaN films grown on optimized GaN base layers. III-polar InGaN films were rough and exhibited a high density of V-pits, while the growth of thick N-polar InGaN films showed improved structural quality and low surface roughness. The results of this dissertation work thereby provide an alternative route to the fabrication of thick InGaN films for potential use in solar cells as well as strain reducing schemes for deep-green and red light emitters. Moreover, this dissertation investigated stress relaxation in thick N-polar films using in situ reflectivity and curvature measurements. The results showed that stress relaxation in N-polar InGaN significantly differed from III-polar InGaN due to the absence of V-pits and it was hypothesized that plastic relaxation in N-polar InGaN could occur by dislocation glide, which typically is kinetically limited at such low growth temperatures required for InGaN. The second part of this dissertation research work focused on buffer free growth of GaN directly on SiC and on epitaxial graphene produced on SiC for potential vertical devices. The studies presented in this dissertation work on the growth of GaN directly on SiC compared the stress evolution of GaN films grown with and without an AlN buffer layer. Films grown directly on SiC showed reduced threading dislocation densities and improved surface roughness when compared to the growth of GaN on an AlN buffer layer. The dislocations in the GaN films grown di

Inter-rater reliability of malaria parasite counts and comparison of methods

PubMed Central

2009-01-01

Background The introduction of artemesinin-based treatment for falciparum malaria has led to a shift away from symptom-based diagnosis. Diagnosis may be achieved by using rapid non-microscopic diagnostic tests (RDTs), of which there are many available. Light microscopy, however, has a central role in parasite identification and quantification and remains the main method of parasite-based diagnosis in clinic and hospital settings and is necessary for monitoring the accuracy of RDTs. The World Health Organization has prepared a proficiency testing panel containing a range of malaria-positive blood samples of known parasitaemia, to be used for the assessment of commercially available malaria RDTs. Different blood film and counting methods may be used for this purpose, which raises questions regarding accuracy and reproducibility. A comparison was made of the established methods for parasitaemia estimation to determine which would give the least inter-rater and inter-method variation Methods Experienced malaria microscopists counted asexual parasitaemia on different slides using three methods; the thin film method using the total erythrocyte count, the thick film method using the total white cell count and the Earle and Perez method. All the slides were stained using Giemsa pH 7.2. Analysis of variance (ANOVA) models were used to find the inter-rater reliability for the different methods. The paired t-test was used to assess any systematic bias between the two methods, and a regression analysis was used to see if there was a changing bias with parasite count level. Results The thin blood film gave parasite counts around 30% higher than those obtained by the thick film and Earle and Perez methods, but exhibited a loss of sensitivity with low parasitaemia. The thick film and Earle and Perez methods showed little or no bias in counts between the two methods, however, estimated inter-rater reliability was slightly better for the thick film method. Conclusion The thin film method gave results closer to the true parasite count but is not feasible at a parasitaemia below 500 parasites per microlitre. The thick film method was both reproducible and practical for this project. The determination of malarial parasitaemia must be applied by skilled operators using standardized techniques. PMID:19939271

Estimation of appropriate lubricating film thickness in ceramic-on-ceramic hip prostheses

NASA Astrophysics Data System (ADS)

Tauviqirrahman, M.; Muchammad, Bayuseno, A. P.; Ismail, R.; Saputra, E.; Jamari, J.

2016-04-01

Artificial hip prostheses, consisting of femoral head and acetabular cup are widely used and have affected the lives of many people.However, the primary issue associated with the long term performance of hip prostheses is loosening induced by excessive wear during daily activity. Therefore, an effective lubrication is necessary to significantly decrease the wear. To help understand the lubricating performance of such typical hip joint prostheses, in the present paper a hydrodynamic lubrication model based on Reynolds equationwas introduced. The material pairs of ceramic acetabular cup against ceramic femoral head was investegated.The main aim of this study is to investigate of the effect of loading on the formation of lubricating film thickness.The model of a ball-in-socket configuration was considered assuming that the cup was stationary while the ball was to rotate at a steady angular velocityvarying loads.Based on simulation result, it was found that to promote fluid film lubrication and prevent the contacting components leading to wear, the film thickness of lubricant should be determined carefully based on the load applied. This finding may have useful implication in predicting the failure of lubricating synovial fluid film and wear generation in hip prostheses.

Microstructures and growth mechanisms of GaN films epitaxially grown on AlN/Si hetero-structures by pulsed laser deposition at different temperatures

PubMed Central

Wang, Wenliang; Yang, Weijia; Lin, Yunhao; Zhou, Shizhong; Li, Guoqiang

2015-01-01

2 inch-diameter GaN films with homogeneous thickness distribution have been grown on AlN/Si(111) hetero-structures by pulsed laser deposition (PLD) with laser rastering technique. The surface morphology, crystalline quality, and interfacial property of as-grown GaN films are characterized in detail. By optimizing the laser rastering program, the ~300 nm-thick GaN films grown at 750 °C show a root-mean-square (RMS) thickness inhomogeneity of 3.0%, very smooth surface with a RMS surface roughness of 3.0 nm, full-width at half-maximums (FWHMs) for GaN(0002) and GaN(102) X-ray rocking curves of 0.7° and 0.8°, respectively, and sharp and abrupt AlN/GaN hetero-interfaces. With the increase in the growth temperature from 550 to 850 °C, the surface morphology, crystalline quality, and interfacial property of as-grown ~300 nm-thick GaN films are gradually improved at first and then decreased. Based on the characterizations, the corresponding growth mechanisms of GaN films grown on AlN/Si hetero-structures by PLD with various growth temperatures are hence proposed. This work would be beneficial to understanding the further insight of the GaN films grown on Si(111) substrates by PLD for the application of GaN-based devices. PMID:26563573

Real-Time Deposition Monitor for Ultrathin Conductive Films

NASA Technical Reports Server (NTRS)

Hines, Jacqueline

2011-01-01

A device has been developed that can be used for the real-time monitoring of ultrathin (2 or more) conductive films. The device responds in less than two microseconds, and can be used to monitor film depositions up to about 60 thick. Actual thickness monitoring capability will vary based on properties of the film being deposited. This is a single-use device, which, due to the very low device cost, can be disposable. Conventional quartz/crystal microbalance devices have proven inadequate to monitor the thickness of Pd films during deposition of ultrathin films for hydrogen sensor devices. When the deposited film is less than 100 , the QCM measurements are inadequate to allow monitoring of the ultrathin films being developed. Thus, an improved, high-sensitivity, real-time deposition monitor was needed to continue Pd film deposition development. The new deposition monitor utilizes a surface acoustic wave (SAW) device in a differential delay-line configuration to produce both a reference response and a response for the portion of the device on which the film is being deposited. Both responses are monitored simultaneously during deposition. The reference response remains unchanged, while the attenuation of the sensing path (where the film is being deposited) varies as the film thickness increases. This device utilizes the fact that on high-coupling piezoelectric substrates, the attenuation of an SAW undergoes a transition from low to very high, and back to low as the conductivity of a film on the device surface goes from nonconductive to highly conductive. Thus, the sensing path response starts with a low insertion loss, and as a conductive film is deposited, the film conductivity increases, causing the device insertion loss to increase dramatically (by up to 80 dB or more), and then with continued film thickness increases (and the corresponding conductivity increases), the device insertion loss goes back down to the low level at which it started. This provides a continuous, real-time monitoring of film deposition. For use with different films, the device would need to be calibrated to provide an understanding of how film thickness is related to film conductivity, as the device is responding primarily to conductivity effects (and not to mass loading effects) in this ultrathin film regime.

Surface and magnetic characteristics of Ni-Mn-Ga/Si (100) thin film

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kumar, S. Vinodh; Pandyan, R. Kodi; Mahendran, M., E-mail: manickam-mahendran@tce.edu, E-mail: perialangulam@gmail.com

2016-05-23

Polycrystalline Ni-Mn-Ga thin films have been deposited on Si (100) substrate with different film thickness. The influence of film thickness on the phase structure and magnetic domain of the films has been examined by scanning electron microscope, atomic force microscopy and magnetic force microscopy. Analysis of structural parameters indicates that the film at lower thickness exhibits the coexistence of both austenite and martensite phase, whereas at higher thickness L1{sub 2} cubic non magnetic phase is noticed. The grains size and the surface roughness increase along with the film thickness and attain the maximum of 45 nm and 34.96 nm, respectively.more » At lower film thickness, the magnetic stripe domain is found like maze pattern with dark and bright images, while at higher thickness the absence of stripe domains is observed. The magnetic results reveal that the films strongly depend on their phase structure and microstructure which influence by the film thickness.« less

Thickness dependencies of structural and magnetic properties of cubic and tetragonal Heusler alloy bilayer films

NASA Astrophysics Data System (ADS)

Ranjbar, R.; Suzuki, K. Z.; Sugihara, A.; Ando, Y.; Miyazaki, T.; Mizukami, S.

2017-07-01

The thickness dependencies of the structural and magnetic properties for bilayers of cubic Co-based Heusler alloys (CCHAs: Co2FeAl (CFA), Co2FeSi (CFS), Co2MnAl (CMA), and Co2MnSi (CMS)) and D022-MnGa were investigated. Epitaxy of the B2 structure of CCHAs on a MnGa film was achieved; the smallest thickness with the B2 structure was found for 3-nm-thick CMS and CFS. The interfacial exchange coupling (Jex) was antiferromagnetic (AFM) for all of the CCHAs/MnGa bilayers except for unannealed CFA/MnGa samples. A critical thickness (tcrit) at which perpendicular magnetization appears of approximately 4-10 nm for the CMA/MnGa and CMS/MnGa bilayers was observed, whereas this thickness was 1-3 nm for the CFA/MnGa and CFS/MnGa films. The critical thickness for different CCHAs materials is discussed in terms of saturation magnetization (Ms) and the Jex .

Co-based amorphous thin films on silicon with soft magnetic properties

NASA Astrophysics Data System (ADS)

Masood, Ansar; McCloskey, P.; Mathúna, Cian Ó.; Kulkarni, S.

2018-05-01

The present work investigates the emergence of multiple modes in the high-frequency permeability spectrum of Co-Zr-Ta-B amorphous thin films. Amorphous thin films of different thicknesses (t=100-530 nm) were deposited by DC magnetron sputtering. Their static and dynamic soft magnetic properties were investigated to explore the presence of multi-magnetic phases in the films. A two-phase magnetic behavior of the thicker films (≥333 nm) was revealed by the in-plane hysteresis loops. Multiple resonance peaks were observed in the high-frequency permeability spectrum of the thicker films. The thickness dependent multiple resonance peaks below the main ferromagnetic resonance (FMR) can be attributed to the two-phase magnetic behaviors of the films.

Effect of catalyst film thickness on carbon nanotube growth by selective area chemical vapor deposition

NASA Astrophysics Data System (ADS)

Wei, Y. Y.; Eres, Gyula; Merkulov, V. I.; Lowndes, D. H.

2001-03-01

The correlation between prepatterned catalyst film thickness and carbon nanotube (CNT) growth by selective area chemical vapor deposition (CVD) was studied using Fe and Ni as catalyst. To eliminate sample-to-sample variations and create a growth environment in which the film thickness is the sole variable, samples with continuously changing catalyst film thickness from 0 to 60 nm were fabricated by electron-gun evaporation. Using thermal CVD CNTs preferentially grow as a dense mat on the thin regions of the catalyst film. Moreover, beyond a certain critical film thickness no tubes were observed. The critical film thickness for CNT growth was found to increase with substrate temperature. There appears to be no strong correlation between the film thickness and the diameter of the tubes. In contrast, using plasma enhanced CVD with Ni as catalyst, vertically oriented CNTs grow in the entire range of catalyst film thickness. The diameter of these CNTs shows a strong correlation with the catalyst film thickness. The significance of these experimental trends is discussed within the framework of the diffusion model for CNT growth.

Growth evolution of AlN films on silicon (111) substrates by pulsed laser deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Haiyan; Wang, Wenliang; Yang, Weijia

2015-05-14

AlN films with various thicknesses have been grown on Si(111) substrates by pulsed laser deposition (PLD). The surface morphology and structural property of the as-grown AlN films have been investigated carefully to comprehensively explore the epitaxial behavior. The ∼2 nm-thick AlN film initially grown on Si substrate exhibits an atomically flat surface with a root-mean-square surface roughness of 0.23 nm. As the thickness increases, AlN grains gradually grow larger, causing a relatively rough surface. The surface morphology of ∼120 nm-thick AlN film indicates that AlN islands coalesce together and eventually form AlN layers. The decreasing growth rate from 240 to 180 nm/h is amore » direct evidence that the growth mode of AlN films grown on Si substrates by PLD changes from the islands growth to the layer growth. The evolution of AlN films throughout the growth is studied deeply, and its corresponding growth mechanism is hence proposed. These results are instructional for the growth of high-quality nitride films on Si substrates by PLD, and of great interest for the fabrication of AlN-based devices.« less

Visualization of Sound Waves Using Regularly Spaced Soap Films

ERIC Educational Resources Information Center

Elias, F.; Hutzler, S.; Ferreira, M. S.

2007-01-01

We describe a novel demonstration experiment for the visualization and measurement of standing sound waves in a tube. The tube is filled with equally spaced soap films whose thickness varies in response to the amplitude of the sound wave. The thickness variations are made visible based on optical interference. The distance between two antinodes is…

The effect of wet film thickness on VOC emissions from a finishing varnish.

PubMed

Lee, Shun-Cheng; Kwok, Ngai-Hong; Guo, Hai; Hung, Wing-Tat

2003-01-20

Finishing varnishes, a typical type of oil-based varnishes, are widely used to shine metal, wood trim and cabinet surfaces in Hong Kong. The influence of wet film thickness on volatile organic compound (VOC) emissions from a finishing varnish was studied in an environmental test chamber. The varnish was applied on an aluminium foil with three different wet film thickness (35.2, 69.9 and 107.3 microm). The experimental conditions were 25.0 degrees C, 50.0% relative humidity (RH) with an air exchange rate of 0.5 h(-1). The concentrations of the major VOCs were monitored for the first 10 h. The air samples were collected by canisters and analysed by gas chromatography/mass selective detector (GC/MSD). Six major VOCs including toluene, chlorobenzene, ethylbenzene, m,p-xylene, o-xylene and 1,3,5-trimethylbenzene were identified and quantified. Marked differences were observed for three different film thicknesses. VOC concentrations increased rapidly during the first few hours and then decreased as the emission rates declined. The thicker the wet film, the higher the VOC emissions. A model expression included an exponentially decreasing emission rate of varnish film. The concentration and time data measured in the chamber were used to determine the parameters of empirical emission rate model. The present work confirmed that the film thickness of varnish influenced markedly the concentrations and emissions of VOCs. Copyright 2002 Elsevier Science B.V.

Packaging Technology Designed, Fabricated, and Assembled for High-Temperature SiC Microsystems

NASA Technical Reports Server (NTRS)

Chen, Liang-Yu

2003-01-01

A series of ceramic substrates and thick-film metalization-based prototype microsystem packages designed for silicon carbide (SiC) high-temperature microsystems have been developed for operation in 500 C harsh environments. These prototype packages were designed, fabricated, and assembled at the NASA Glenn Research Center. Both the electrical interconnection system and the die-attach scheme for this packaging system have been tested extensively at high temperatures. Printed circuit boards used to interconnect these chip-level packages and passive components also are being fabricated and tested. NASA space and aeronautical missions need harsh-environment, especially high-temperature, operable microsystems for probing the inner solar planets and for in situ monitoring and control of next-generation aeronautical engines. Various SiC high-temperature-operable microelectromechanical system (MEMS) sensors, actuators, and electronics have been demonstrated at temperatures as high as 600 C, but most of these devices were demonstrated only in the laboratory environment partially because systematic packaging technology for supporting these devices at temperatures of 500 C and beyond was not available. Thus, the development of a systematic high-temperature packaging technology is essential for both in situ testing and the commercialization of high-temperature SiC MEMS. Researchers at Glenn developed new prototype packages for high-temperature microsystems using ceramic substrates (aluminum nitride and 96- and 90-wt% aluminum oxides) and gold (Au) thick-film metalization. Packaging components, which include a thick-film metalization-based wirebond interconnection system and a low-electrical-resistance SiC die-attachment scheme, have been tested at temperatures up to 500 C. The interconnection system composed of Au thick-film printed wire and 1-mil Au wire bond was tested in 500 C oxidizing air with and without 50-mA direct current for over 5000 hr. The Au thick-film metalization-based wirebond electrical interconnection system was also tested in an extremely dynamic thermal environment to assess thermal reliability. The I-V curve1 of a SiC high-temperature diode was measured in oxidizing air at 500 C for 1000 hr to electrically test the Au thick-film material-based die-attach assembly.

Impact of polymer film thickness and cavity size on polymer flow during embossing : towards process design rules for nanoimprint lithography.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Schunk, Peter Randall; King, William P.; Sun, Amy Cha-Tien

2006-08-01

This paper presents continuum simulations of polymer flow during nanoimprint lithography (NIL). The simulations capture the underlying physics of polymer flow from the nanometer to millimeter length scale and examine geometry and thermophysical process quantities affecting cavity filling. Variations in embossing tool geometry and polymer film thickness during viscous flow distinguish different flow driving mechanisms. Three parameters can predict polymer deformation mode: cavity width to polymer thickness ratio, polymer supply ratio, and Capillary number. The ratio of cavity width to initial polymer film thickness determines vertically or laterally dominant deformation. The ratio of indenter width to residual film thickness measuresmore » polymer supply beneath the indenter which determines Stokes or squeeze flow. The local geometry ratios can predict a fill time based on laminar flow between plates, Stokes flow, or squeeze flow. Characteristic NIL capillary number based on geometry-dependent fill time distinguishes between capillary or viscous driven flows. The three parameters predict filling modes observed in published studies of NIL deformation over nanometer to millimeter length scales. The work seeks to establish process design rules for NIL and to provide tools for the rational design of NIL master templates, resist polymers, and process parameters.« less

Thickness Measurement, Rate Control And Automation In Thin Film Coating Technology

NASA Astrophysics Data System (ADS)

Pulker, H. K.

1983-11-01

There are many processes known for fabricating thin films/1, 2.Among them the group of physical vapor deposition processes comprising evaporation, sputtering and ion plating has received special attention.Especially evaporation but also the other PVD techniques are widely used to deposit various single and multilayer coatings for optical and electrical thin film applications/3,4/.A large number of parameters is important in obtaining the required film properties in a reproducible manner when depositing thin films by such processes.Amongst the many are the film thickness, the condensation rate,the substrate temperature,as well as the qualitative and the quantitative composition of the residual gas of primary importance.First of all the film thickness is a dimension which enters in practically all equations used to characterize a thin film. However,when discussing film thickness,definitions are required since there one has to distinguish between various types of thicknesses e.g.geometrical thickness,mass thickness and optical thickness.The geometrical thickness,often also called physical thickness,is defined as the step height between the substrate surface and the film surface.This step height multiplied by the refractive index of the film is termed the optical thickness and is expressed generally in integer multiples of fractional parts of a desired wavelength.The mass thickness finally is defined as the film mass per unit area obtained by weighing.Knowing the density and the optical data of a thin film its mass thickness can be converted into the corresponding geometrical as well as optical thickness.However,with ultrathin films ranging between a few and several atomic or molecular "layers"the concept of a film thickness may become senseless since often no closed film exists of such minor deposits.Although film thickness is a length,the measurement of it can,obviously,not be accomplished with conventional methods for length determinations but requires special methods.The great efforts made to overcome this problem led to a remarkable number of different,often highly sophisticated film thickness measuring methods reviewed in various articles such ase.g./5,6/.With some of the methods,it is possible to carry out measurement under vacuum during and after the film formation other determinations have to be undertaken outside the deposition chamber only after the film has been produced.Many of the methods cannot be employed for all film substances,and there are varying limits as regards the range of thickness and measuring accuracy.Furthermore, with these methods the film to be measured is often specially prepared or dissolved during measurement and therefore becomes useless for additional investigations or applications.If only those methods which can be employed during the film deposition are considered,then the very large number of methods is considerably reduced.Insitu measurements,however,are highly desired since many basic investigations and practically all industrial applications require a precise knowledge of thefilm thickness at any instant to enable termination of the deposition process at the predetermined right moment.Apartfrom few exceptions in practical film deposition only optical measuring units andmass determination monitors are used.

Low temperature perovskite crystallization of highly tunable dielectric Ba0.7Sr0.3TiO3 thick films deposited by ion beam sputtering on platinized silicon substrates

NASA Astrophysics Data System (ADS)

Zhu, X. H.; Guigues, B.; Defaÿ, E.; Dubarry, C.; Aïd, M.

2009-02-01

Ba0.7Sr0.3TiO3 (BST) thick films with thickness up to 1 μm were deposited on Pt-coated silicon substrates by ion beam sputtering, followed by an annealing treatment. It is demonstrated that pure well-crystallized perovskite phase could be obtained in thick BST films by a low temperature process (535 °C). The BST thick films show highly tunable dielectric properties with tunability (at 800 kV/cm) up to 51.0% and 66.2%, respectively, for the 0.5 and 1 μm thick films. The relationship between strains and dielectric properties was systematically investigated in the thick films. The results suggest that a comparatively larger tensile thermal in-plane strain (0.15%) leads to the degradation in dielectric properties of the 0.5 μm thick film; besides, strong defect-related inhomogeneous strains (˜0.3%) make the dielectric peaks smearing and broadening in the thick films, which, however, preferably results in high figure-of-merit factors over a wide operating temperature range. Moreover, the leakage current behavior in the BST thick films was found to be dominated by the space-charge-limited-current mechanism, irrespective of the film thickness.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Won, Yoo Jai; Ki, Hyungson

A novel picosecond-laser pulsed laser deposition method has been developed for fabricating functionally graded films with pre-designed gradient profiles. Theoretically, the developed method is capable of precisely fabricating films with any thicknesses and any gradient profiles by controlling the laser beam powers for the two different targets based on the film composition profiles. As an implementation example, we have successfully constructed functionally graded diamond-like carbon films with six different gradient profiles: linear, quadratic, cubic, square root, cubic root, and sinusoidal. Energy dispersive X-ray spectroscopy is employed for investigating the chemical composition along the thickness of the film, and the depositionmore » profile and thickness errors are found to be less than 3% and 1.04%, respectively. To the best of the authors' knowledge, this is the first method for fabricating films with designed gradient profiles and has huge potential in many areas of coatings and films, including multifunctional optical films. We believe that this method is not only limited to the example considered in this study, but also can be applied to all material combinations as long as they can be deposited using the pulsed laser deposition technique.« less

Organic nonvolatile resistive memory devices based on thermally deposited Au nanoparticle

NASA Astrophysics Data System (ADS)

Jin, Zhiwen; Liu, Guo; Wang, Jizheng

2013-05-01

Uniform Au nanoparticles (NPs) are formed by thermally depositing nominal 2-nm thick Au film on a 10-nm thick polyimide film formed on a Al electrode, and then covered by a thin polymer semiconductor film, which acts as an energy barrier for electrons to be injected from the other Al electrode (on top of polymer film) into the Au NPs, which are energetically electron traps in such a resistive random access memory (RRAM) device. The Au NPs based RRAM device exhibits estimated retention time of 104 s, cycle times of more than 100, and ON-OFF ratio of 102 to 103. The carrier transport properties are also analyzed by fitting the measured I-V curves with several conduction models.

The Effects of Film Thickness and Evaporation Rate on Si-Cu Thin Films for Lithium Ion Batteries.

PubMed

Polat, B Deniz; Keles, Ozgul

2015-12-01

The reversible cyclability of Si based composite anodes is greatly improved by optimizing the atomic ratio of Si/Cu, the thickness and the evaporation rates of films fabricated by electron beam deposition method. The galvanostatic test results show that 500 nm thick flim, having 10%at. Cu-90%at. Si, deposited with a moderate evaporation rate (10 and 0.9 Å/s for Si and Cu respectively) delivers 2642.37 mAh g(-1) as the first discharge capacity with 76% Coulombic efficiency. 99% of its initial capacity is retained after 20 cycles. The electron conductive pathway and high mechanical tolerance induced by Cu atoms, the low electrical resistivity of the film due to Cu3Si particles, and the homogeneously distributed nano-sized/amorphous particles in the composite thin film could explain this outstanding electrochemical performance of the anode.

Nanomagnetic behavior of fullerene thin films in Earth magnetic field in dark and under polarization light influences.

PubMed

Koruga, Djuro; Nikolić, Aleksandra; Mihajlović, Spomenko; Matija, Lidija

2005-10-01

In this paper magnetic fields intensity of C60 thin films of 60 nm and 100 nm thickness under the influence of polarization lights are presented. Two proton magnetometers were used for measurements. Significant change of magnetic field intensity in range from 2.5 nT to 12.3 nT is identified as a difference of dark and polarization lights of 60 nm and 100 nm thin films thickness, respectively. Specific power density of polarization light was 40 mW/cm2. Based on 200 measurement data average value of difference between magnetic intensity of C60 thin films, with 60 nm and 100 nm thickness, after influence of polarization light, were 3.9 nT and 9.9 nT respectively.

Shear rheological characterization of motor oils

NASA Technical Reports Server (NTRS)

Bair, Scott; Winer, Ward O.

1988-01-01

Measurements of high pressure viscosity, traction coefficient, and EHD film thickness were performed on twelve commercial automotive engine oils, a reference oil, two unformulated base oils and two unformated base oil and polymer blends. An effective high shear rate inlet viscosity was calculated from film thickness and pressure viscosity coefficient. The difference between measured and effective viscosity is a function of the polymer type and concentration. Traction measurements did not discriminate mileage formulated oils from those not so designated.

Ultra thin metallic coatings to control near field radiative heat transfer

NASA Astrophysics Data System (ADS)

Esquivel-Sirvent, R.

2016-09-01

We present a theoretical calculation of the changes in the near field radiative heat transfer between two surfaces due to the presence of ultra thin metallic coatings on semiconductors. Depending on the substrates, the radiative heat transfer is modulated by the thickness of the ultra thin film. In particular we consider gold thin films with thicknesses varying from 4 to 20 nm. The ultra-thin film has an insulator-conductor transition close to a critical thickness of dc = 6.4 nm and there is an increase in the near field spectral heat transfer just before the percolation transition. Depending on the substrates (Si or SiC) and the thickness of the metallic coatings we show how the near field heat transfer can be increased or decreased as a function of the metallic coating thickness. The calculations are based on available experimental data for the optical properties of ultrathin coatings.

Morphological study of electrophoretically deposited TiO2 film for DSSC application

NASA Astrophysics Data System (ADS)

Patel, Alkesh B.; Patel, K. D.; Soni, S. S.; Sonigara, K. K.

2018-05-01

In the immerging field of eco-friendly and low cost photovoltaic devices, dye sensitized solar cell (DSSC) [1] has been investigated as promising alternative to the conventional silicon-based solar cells. In the DSSC device, photoanode is crucial component that take charge of holding sensitizer on it and inject the electrons from the sensitizer to current collector. Nanoporous TiO2 is the most relevant candidate for the preparation of photoanode in DSSCs. Surface properties, morphology, porosity and thickness of TiO2 film as well as preparation technique determine the performance of device. In the present work we have report the study of an effect of nanoporous anatase titanium dioxide (TiO2) film thickness on DSSC performance. Photoanode TiO2 (P25) film was deposited on conducting substrate by electrophoresis technique (EPD) and film thickness was controlled during deposition by applying different current density for a constant time interval. Thickness and surface morphology of prepared films was studied by SEM and transmittance analysis. The same set of photoanode was utilized in DSSC devices using metal free organic dye sensitizer to evaluate the photovoltaic performance. Devices were characterized through Current-Voltage (I-V) characteristic, electrochemical impedance spectroscopy (EIS) and open circuit voltage decay curves. Dependency of device performance corresponding to TiO2 film thickness is investigated through the lifetime kinetics of electron charge transfer mechanism trough impedance fitting. It is concluded that appropriate thickness along with uniformity and porosity are required to align the dye molecules to respond efficiently the incident light photons.

Study on optimizing ultrasonic irradiation period for thick polycrystalline PZT film by hydrothermal method.

PubMed

Ohta, Kanako; Isobe, Gaku; Bornmann, Peter; Hemsel, Tobias; Morita, Takeshi

2013-04-01

The hydrothermal method utilizes a solution-based chemical reaction to synthesize piezoelectric thin films and powders. This method has a number of advantages, such as low-temperature synthesis, and high purity and high quality of the product. In order to promote hydrothermal reactions, we developed an ultrasonic assisted hydrothermal method and confirmed that it produces dense and thick lead-zirconate-titanate (PZT) films. In the hydrothermal method, a crystal growth process follows the nucleation process. In this study, we verified that ultrasonic irradiation is effective for the nucleation process, and there is an optimum irradiation period to obtain thicker PZT films. With this optimization, a 9.2-μm-thick PZT polycrystalline film was obtained in a single deposition process. For this film, ultrasonic irradiation was carried out from the beginning of the reaction for 18 h, followed by a 6 h deposition without ultrasonic irradiation. These results indicate that the ultrasonic irradiation mainly promotes the nucleation process. Copyright © 2012 Elsevier B.V. All rights reserved.

Effect of different thickness crystalline SiC buffer layers on the ordering of MgB{sub 2} films probed by extended x-ray absorption fine structure

DOE Office of Scientific and Technical Information (OSTI.GOV)

Putri, W. B. K.; Tran, D. H.; Kang, B., E-mail: bwkang@chungbuk.ac.kr

2014-03-07

Extended X-ray absorption fine structure (EXAFS) spectroscopy is a powerful method to investigate the local structure of thin films. Here, we have studied EXAFS of MgB{sub 2} films grown on SiC buffer layers. Crystalline SiC buffer layers with different thickness of 70, 100, and 130 nm were deposited on the Al{sub 2}O{sub 3} (0001) substrates by using a pulsed laser deposition method, and then MgB{sub 2} films were grown on the SiC buffer layer by using a hybrid physical-chemical vapor deposition technique. Transition temperature of MgB{sub 2} film decreased with increasing thickness of SiC buffer layer. However, the T{sub c} droppingmore » went no farther than 100 nm-thick-SiC. This uncommon behavior of transition temperature is likely to be created from electron-phonon interaction in MgB{sub 2} films, which is believed to be related to the ordering of MgB{sub 2} atomic bonds, especially in the ordering of Mg–Mg bonds. Analysis from Mg K-edge EXAFS measurements showed interesting ordering behavior of MgB{sub 2} films. It is noticeable that the ordering of Mg–B bonds is found to decrease monotonically with the increase in SiC thickness of the MgB{sub 2} films, while the opposite happens with the ordering in Mg–Mg bonds. Based on these results, crystalline SiC buffer layers in MgB{sub 2} films seemingly have evident effects on the alteration of the local structure of the MgB{sub 2} film.« less

Wear Potential Due to Low EHD Films During Elevated Temperatures

NASA Technical Reports Server (NTRS)

Leville, Alan; Ward, Peter

2014-01-01

An earlier study showed that EHD films could be accurately measured in a running bearing and that the EHD film eventually runs-in to a steady state value [1]. In the present paper, we report on additional tests conducted on bearings with more lubricants, wider speeds, and higher temperatures. The new results consistently show that all lubricants tested, including MAC-based lubricants have EHD film levels that are lower than model predictions in some situations. In addition, the MAC lubricants studied have lower film thickness than traditional hydrocarbons. Figure 1 is taken from [1] and shows room temperature data of MAC oil and Corey 100 oil, illustrating the smaller EHD film results when using this MAC oil. Since higher temperatures produce lower films by changing the viscosity, the concern we have is that the EHD films may be too small to prevent ball/race metal contact and resulting wear at lower speeds. Best bearing practices would have the EHD film thickness be at least three (3) times the composite surface roughness. In this paper, we will present measured EHD thicknesses of lubricant films at speeds up to several thousand RPM for bearing bore sizes from as low as 6 mm (0.2 in) to as large as 35 mm (1.4 in) using MAC, Corey and KG-80. Ambient temperatures from room temperature to 52C (125F) are used. Testing was done with the base oils as well as formulated greases. Greases eventually ran in to the same EHD values as the base oil but took longer times to get there. The results clearly indicate that wear is very possible in all steel bearings when using MAC lubricants and that this condition worsens with higher temperatures and smaller bearing size.

Effect of precursor concentration and film thickness deposited by layer on nanostructured TiO2 thin films

NASA Astrophysics Data System (ADS)

Affendi, I. H. H.; Sarah, M. S. P.; Alrokayan, Salman A. H.; Khan, Haseeb A.; Rusop, M.

2018-05-01

Sol-gel spin coating method is used in the production of nanostructured TiO2 thin film. The surface topology and morphology was observed using the Atomic Force Microscopy (AFM) and Field Emission Scanning Electron Microscopy (FESEM). The electrical properties were investigated by using two probe current-voltage (I-V) measurements to study the electrical resistivity behavior, hence the conductivity of the thin film. The solution concentration will be varied from 14.0 to 0.01wt% with 0.02wt% interval where the last concentration of 0.02 to 0.01wt% have 0.01wt% interval to find which concentrations have the highest conductivity then the optimized concentration's sample were chosen for the thickness parameter based on layer by layer deposition from 1 to 6 layer. Based on the result, the lowest concentration of TiO2, the surface becomes more uniform and the conductivity will increase. As the result, sample of 0.01wt% concentration have conductivity value of 1.77E-10 S/m and will be advanced in thickness parameter. Whereas in thickness parameter, the 3layer deposition were chosen as its conductivity is the highest at 3.9098E9 S/m.

Low temperature perovskite crystallization of highly tunable dielectric Ba{sub 0.7}Sr{sub 0.3}TiO{sub 3} thick films deposited by ion beam sputtering on platinized silicon substrates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhu, X. H.; Defaye, E.; Aied, M.

2009-02-15

Ba{sub 0.7}Sr{sub 0.3}TiO{sub 3} (BST) thick films with thickness up to 1 {mu}m were deposited on Pt-coated silicon substrates by ion beam sputtering, followed by an annealing treatment. It is demonstrated that pure well-crystallized perovskite phase could be obtained in thick BST films by a low temperature process (535 deg. C). The BST thick films show highly tunable dielectric properties with tunability (at 800 kV/cm) up to 51.0% and 66.2%, respectively, for the 0.5 and 1 {mu}m thick films. The relationship between strains and dielectric properties was systematically investigated in the thick films. The results suggest that a comparatively largermore » tensile thermal in-plane strain (0.15%) leads to the degradation in dielectric properties of the 0.5 {mu}m thick film; besides, strong defect-related inhomogeneous strains ({approx}0.3%) make the dielectric peaks smearing and broadening in the thick films, which, however, preferably results in high figure-of-merit factors over a wide operating temperature range. Moreover, the leakage current behavior in the BST thick films was found to be dominated by the space-charge-limited-current mechanism, irrespective of the film thickness.« less

Transparent and robust siloxane-based hybrid lamella film as a water vapor barrier coating.

PubMed

Tokudome, Yasuaki; Hara, Takaaki; Abe, Risa; Takahashi, Masahide

2014-11-12

Water vapor barriers are important in various application fields, such as food packaging and sealants in electronic devices. Polymer/clay composites are well-studied water vapor barrier materials, but their transparency and mechanical strength degrade with increasing clay loading. Herein, we demonstrate films with good water vapor barrier properties, high transparency, and mechanical/thermal stability. Water vapor barrier films were prepared by the solution crystallization of siloxane hybrid lamellae. The films consist of highly crystallized organic/inorganic hybrid lamellae, which provide high transparency, hardness, and thermal stability and inhibit the permeation of water vapor. The water permeability of a 6 μm thick hybrid film is comparable to that of a 200 μm thick silicon rubber film.

Non-imaging ray-tracing for sputtering simulation with apodization

NASA Astrophysics Data System (ADS)

Ou, Chung-Jen

2018-04-01

Although apodization patterns have been adopted for the analysis of sputtering sources, the analytical solutions for the film thickness equations are yet limited to only simple conditions. Empirical formulations for thin film sputtering lacking the flexibility in dealing with multi-substrate conditions, a suitable cost-effective procedure is required to estimate the film thickness distribution. This study reports a cross-discipline simulation program, which is based on discrete particle Monte-Carlo methods and has been successfully applied to a non-imaging design to solve problems associated with sputtering uniformity. Robustness of the present method is first proved by comparing it with a typical analytical solution. Further, this report also investigates the overall all effects cause by the sizes of the deposited substrate, such that the determination of the distance between the target surface and the apodization index can be complete. This verifies the capability of the proposed method for solving the sputtering film thickness problems. The benefit is that an optical thin film engineer can, using the same optical software, design a specific optical component and consider the possible coating qualities with thickness tolerance, during the design stage.

Non-imaging ray-tracing for sputtering simulation with apodization

NASA Astrophysics Data System (ADS)

Ou, Chung-Jen

2018-06-01

Although apodization patterns have been adopted for the analysis of sputtering sources, the analytical solutions for the film thickness equations are yet limited to only simple conditions. Empirical formulations for thin film sputtering lacking the flexibility in dealing with multi-substrate conditions, a suitable cost-effective procedure is required to estimate the film thickness distribution. This study reports a cross-discipline simulation program, which is based on discrete particle Monte-Carlo methods and has been successfully applied to a non-imaging design to solve problems associated with sputtering uniformity. Robustness of the present method is first proved by comparing it with a typical analytical solution. Further, this report also investigates the overall all effects cause by the sizes of the deposited substrate, such that the determination of the distance between the target surface and the apodization index can be complete. This verifies the capability of the proposed method for solving the sputtering film thickness problems. The benefit is that an optical thin film engineer can, using the same optical software, design a specific optical component and consider the possible coating qualities with thickness tolerance, during the design stage.

Effect of silver thickness on structural, optical and morphological properties of nanocrystalline Ag/NiO thin films

NASA Astrophysics Data System (ADS)

Jalili, S.; Hajakbari, F.; Hojabri, A.

2018-03-01

Silver (Ag) nanolayers were deposited on nickel oxide (NiO) thin films by DC magnetron sputtering. The thickness of Ag layers was in range of 20-80 nm by variation of deposition time between 10 and 40 s. X-ray diffraction results showed that the crystalline properties of the Ag/NiO films improved by increasing the Ag film thickness. Also, atomic force microscopy and field emission scanning electron microscopy images demonstrated that the surface morphology of the films was highly affected by film thickness. The film thickness and the size of particles change by elevating the Ag deposition times. The composition of films was determined by Rutherford back scattering spectroscopy. The transmission of light was gradually reduced by augmentation of Ag films thickness. Furthermore; the optical band gap of the films was also calculated from the transmittance spectra.

Sol-gel preparation of silica and titania thin films

NASA Astrophysics Data System (ADS)

Thoř, Tomáš; Václavík, Jan

2016-11-01

Thin films of silicon dioxide (SiO2) and titanium dioxide (TiO2) for application in precision optics prepared via the solgel route are being investigated in this paper. The sol-gel process presents a low cost approach, which is capable of tailoring thin films of various materials in optical grade quality. Both SiO2 and TiO2 are materials well known for their application in the field of anti-reflective and also highly reflective optical coatings. For precision optics purposes, thickness control and high quality of such coatings are of utmost importance. In this work, thin films were deposited on microscope glass slides substrates using the dip-coating technique from a solution based on alkoxide precursors of tetraethyl orthosilicate (TEOS) and titanium isopropoxide (TIP) for SiO2 and TiO2, respectively. As-deposited films were studied using spectroscopic ellipsometry to determine their thickness and refractive index. Using a semi-empirical equation, a relationship between the coating speed and the heat-treated film thickness was described for both SiO2 and TiO2 thin films. This allows us to control the final heat-treated thin film thickness by simply adjusting the coating speed. Furthermore, films' surface was studied using the white-light interferometry. As-prepared films exhibited low surface roughness with the area roughness parameter Sq being on average of 0.799 nm and 0.33 nm for SiO2 and TiO2, respectively.

Formation of precise 2D Au particle arrays via thermally induced dewetting on pre-patterned substrates

PubMed Central

Ji, Ran

2011-01-01

Summary The fabrication of precise 2D Au nanoparticle arrays over a large area is presented. The technique was based on pre-patterning of the substrate before the deposition of a thin Au film, and the creation of periodic particle arrays by subsequent dewetting induced by annealing. Two types of pre-patterned substrates were used: The first comprised an array of pyramidal pits and the second an array of circular holes. For the dewetting of Au films on the pyramidal pit substrate, the structural curvature-driven diffusion cooperates with capillarity-driven diffusion, resulting in the formation of precise 2D particle arrays for films within a structure dependent thickness-window. For the dewetting of Au films on the circular hole substrate, the periodic discontinuities in the films, induced by the deposition, can limit the diffusion paths and lead to the formation of one particle per individual separated region (holes or mesas between holes), and thus, result in the evolution of precise 2D particle arrays. The influence of the pre-patterned structures and the film thickness is analyzed and discussed. For both types of pre-patterned substrate, the Au film thickness had to be adjusted in a certain thickness-window in order to achieve the precise 2D particle arrays. PMID:21977445

Method for measuring and controlling beam current in ion beam processing

DOEpatents

Kearney, Patrick A.; Burkhart, Scott C.

2003-04-29

A method for producing film thickness control of ion beam sputter deposition films. Great improvements in film thickness control is accomplished by keeping the total current supplied to both the beam and suppressor grids of a radio frequency (RF) in beam source constant, rather than just the current supplied to the beam grid. By controlling both currents, using this method, deposition rates are more stable, and this allows the deposition of layers with extremely well controlled thicknesses to about 0.1%. The method is carried out by calculating deposition rates based on the total of the suppressor and beam currents and maintaining the total current constant by adjusting RF power which gives more consistent values.

Thick Films: Electronic Applications. (Latest citations from the Aerospace Database)

NASA Technical Reports Server (NTRS)

1996-01-01

The bibliography contains citations concerning the design, development, fabrication, and evaluation of thick film electronic devices. Thick film solar cells, thick films for radiation conduction, deposition processes, conductive inks are among the topics discussed. Applications in military and civilian avionics are examined.

Molecular beam epitaxy of large-area SnSe2 with monolayer thickness fluctuation

NASA Astrophysics Data System (ADS)

Park, Young Woon; Jerng, Sahng-Kyoon; Jeon, Jae Ho; Roy, Sanjib Baran; Akbar, Kamran; Kim, Jeong; Sim, Yumin; Seong, Maeng-Je; Kim, Jung Hwa; Lee, Zonghoon; Kim, Minju; Yi, Yeonjin; Kim, Jinwoo; Noh, Do Young; Chun, Seung-Hyun

2017-03-01

The interest in layered materials is largely based on the expectation that they will be beneficial for a variety of applications, from low-power-consuming, wearable electronics to energy harvesting. However, the properties of layered materials are highly dependent on thickness, and the difficulty of controlling thickness over a large area has been a bottleneck for commercial applications. Here, we report layer-by-layer growth of SnSe2, a layered semiconducting material, via van der Waals epitaxy. The films were fabricated on insulating mica substrates with substrate temperatures in the range of 210 °C-370 °C. The surface consists of a mixture of N and (N ± 1) layers, showing that the thickness of the film can be defined with monolayer accuracy (±0.6 nm). High-resolution transmission electron microscopy reveals a polycrystalline film with a grain size of ˜100 nm and clear Moiré patterns from overlapped grains with similar thickness. We also report field effect mobility values of 3.7 cm2 V-1 s-1 and 6.7 cm2 V-1 s-1 for 11 and 22 nm thick SnSe2, respectively. SnSe2 films with customizable thickness can provide valuable platforms for industry and academic researchers to fully exploit the potential of layered materials.

Finite size effects in phase transformation kinetics in thin films and surface layers

NASA Astrophysics Data System (ADS)

Trofimov, Vladimir I.; Trofimov, Ilya V.; Kim, Jong-Il

2004-02-01

In studies of phase transformation kinetics in thin films, e.g. crystallization of amorphous films, until recent time is widely used familiar Kolmogorov-Johnson-Mehl-Avrami (KJMA) statistical model of crystallization despite it is applicable only to an infinite medium. In this paper a model of transformation kinetics in thin films based on a concept of the survival probability for randomly chosen point during transformation process is presented. Two model versions: volume induced transformation (VIT) when the second-phase grains nucleate over a whole film volume and surface induced transformation (SIT) when they form on an interface with two nucleation mode: instantaneous nucleation at transformation onset and continuous one during all the process are studied. At VIT-process due to the finite film thickness effects the transformation profile has a maximum in a film middle, whereas that of the grains population reaches a minimum inhere, the grains density is always higher than in a volume material, and the thinner film the slower it transforms. The transformation kinetics in a thin film obeys a generalized KJMA equation with parameters depending on a film thickness and in limiting cases of extremely thin and thick film it reduces to classical KJMA equation for 2D- and 3D-system, respectively.

Formation process of graphite film on Ni substrate with improved thickness uniformity through precipitation control

NASA Astrophysics Data System (ADS)

Kim, Seul-Gi; Hu, Qicheng; Nam, Ki-Bong; Kim, Mun Ja; Yoo, Ji-Beom

2018-04-01

Large-scale graphitic thin film with high thickness uniformity needs to be developed for industrial applications. Graphitic films with thicknesses ranging from 3 to 20 nm have rarely been reported, and achieving the thickness uniformity in that range is a challenging task. In this study, a process for growing 20 nm-thick graphite films on Ni with improved thickness uniformity is demonstrated and compared with the conventional growth process. In the film grown by the process, the surface roughness and coverage were improved and no wrinkles were observed. Observations of the film structure reveal the reasons for the improvements and growth mechanisms.

Some physical properties of Nb2O5 thin films prepared using nobic acid based colloidal suspension at room temperature

NASA Astrophysics Data System (ADS)

Salim, Evan T.; Admon Saimon, Jehan; Abood, Marwa K.; Fakhri, Makram A.

2017-10-01

This work presents the successful preparation of niobium pentoxide micro structures thin films at room temperature. A chemical colloidal suspension was deposited employing Spin coating method. Nb2O5 thin films were prepared at two different thicknesses before and after ultrasonic vibration processes. Optical, structural, and morphological properties were studied. An enhanced crystalline structure with bigger grain size at both thicknesses was obtained after ultrasonic process; this was ensured by SEM results. The energy gap of the prepared films was estimated and found to be about (2.81, 2.42) eV for (T1  =  325 nm) and (2.59, 2.32) eV at the second thickness (T2  =  425 nm). The I-V characteristic study of prepared heterojunction on silicon substrate show an increase in the rectification ratio after the ultrasonic vibrational process for both thicknesses.

Measurement of oil film thickness for application to elastomeric Stirling engine rod seals

NASA Technical Reports Server (NTRS)

Krauter, A. I.

1981-01-01

The rod seal in the Stirling engine has the function of separating high pressure gas from low or ambient pressure oil. An experimental apparatus was designed to measure the oil film thickness distribution for an elastomeric seal in a reciprocating application. Tests were conducted on commercial elastomeric seals having a 76 mm rod and a 3.8 mm axial width. Test conditions included 70 and 90 seal durometers, a sliding velocity of 0.8 m/sec, and a zero pressure gradient across the seal. An acrylic cylinder and a typical synthetic base automotive lubricant were used. The experimental results showed that the effect of seal hardness on the oil film thickness is considerable. A comparison between analytical and experimental oil film profiles for an elastomeric seal during relatively high speed reciprocating motion showed an overall qualitative agreement.

Development and Evaluation of Cefadroxil Drug Loaded Biopolymeric Films Based on Chitosan-Furfural Schiff Base

PubMed Central

Dixit, Ritu B.; Uplana, Rahul A.; Patel, Vishnu A.; Dixit, Bharat C.; Patel, Tarosh S.

2010-01-01

Cefadroxil drug loaded biopolymeric films of chitosan-furfural schiff base were prepared by reacting chitosan with furfural in presence of acetic acid and perchloric acid respectively for the external use. Prepared films were evaluated for their strength, swelling index, thickness, drug content, uniformity, tensile strength, percent elongation, FTIR spectral analysis and SEM. The results of in vitro diffusion studies revealed that the films exhibited enhanced drug diffusion as compared to the films prepared using untreated chitosan. The films also demonstrated good to moderate antibacterial activities against selective gram positive and gram negative bacteria. PMID:21179325

In situ ice and structure thickness monitoring using integrated and flexible ultrasonic transducers

NASA Astrophysics Data System (ADS)

Liu, Q.; Wu, K.-T.; Kobayashi, M.; Jen, C.-K.; Mrad, N.

2008-08-01

Two types of ultrasonic sensors are presented for in situ capability development of ice detection and structure thickness measurement. These piezoelectric film based sensors have been fabricated by a sol-gel spray technique for aircraft environments and for temperatures ranging from -80 to 100 °C. In one sensor type, piezoelectric films of thickness greater than 40 µm are deposited directly onto the interior of a 1.3 mm thick aluminum (Al) alloy control surface (stabilizer) of an aircraft wing structure as integrated ultrasonic transducers (UTs). In the other sensor type, piezoelectric films are coated onto a 50 µm thick polyimide membrane as flexible UTs. These were subsequently glued onto similar locations at the same control surfaces. In situ monitoring of stabilizer outer skin thickness was performed. Ice build-up ranging from a fraction of 1 mm to less than 1.5 mm was also detected on a 3 mm thick Al plate. Measurements using these ultrasonic sensors agreed well with those obtained by a micrometer. Tradeoffs of these two approaches are presented.

Storage stability of banana chips in polypropylene based nanocomposite packaging films.

PubMed

Manikantan, M R; Sharma, Rajiv; Kasturi, R; Varadharaju, N

2014-11-01

In this study, polypropylene (PP) based nanocomposite films of 15 different compositions of nanoclay, compatibilizer and thickness were developed and used for packaging and storage of banana chips. The effect of nanocomposite films on the quality characteristics viz. moisture content (MC), water activity (WA), total color difference(TCD), breaking force (BF), free fatty acid (FFA), peroxide value(PV), total plate count (TPC) and overall acceptability score of banana chips under ambient condition at every 15 days interval were studied for 120 days. All quality parameters of stored banana chips increased whereas overall acceptability scores decreased during storage. The elevation in FFA, BF and TCD of stored banana chips increased with elapse of storage period as well as with increased proportion of both nanoclay and compatibilizer but decreased by reducing the thickness of film. Among all the packaging materials, the WA of banana chips remained lower than 0.60 i.e. critical limit for microbial growth up to 90 days of storage. The PV of banana chips packaged also remained within the safe limit of 25 meq oxygen kg(-1) throughout the storage period. Among all the nanocomposite films, packaging material having 5 % compatibilizer, 2 % nanoclay & 100 μm thickness (treatment E) and 10 % compatibilizer, 4 % nanoclay & 120 μm thickness (treatment N) showed better stability of measured quality characteristics of banana chips than any other treatment.

Dewetting dynamics of a gold film on graphene: implications for nanoparticle formation.

PubMed

Namsani, Sadanandam; Singh, Jayant K

2016-01-01

The dynamics of dewetting of gold films on graphene surfaces is investigated using molecular dynamics simulation. The effect of temperature (973-1533 K), film diameter (30-40 nm) and film thickness (0.5-3 nm) on the dewetting mechanism, leading to the formation of nanoparticles, is reported. The dewetting behavior for films ≤5 Å is in contrast to the behavior seen for thicker films. The retraction velocity, in the order of ∼300 m s(-1) for a 1 nm film, decreases with an increase in film thickness, whereas it increases with temperature. However at no point do nanoparticles detach from the surface within the temperature range considered in this work. We further investigated the self-assembly behavior of nanoparticles on graphene at different temperatures (673-1073 K). The process of self-assembly of gold nanoparticles is favorable at lower temperatures than at higher temperatures, based on the free-energy landscape analysis. Furthermore, the shape of an assembled structure is found to change from spherical to hexagonal, with a marked propensity towards an icosahedral structure based on the bond-orientational order parameters.

InGaN-based thin film solar cells: Epitaxy, structural design, and photovoltaic properties

NASA Astrophysics Data System (ADS)

Sang, Liwen; Liao, Meiyong; Koide, Yasuo; Sumiya, Masatomo

2015-03-01

InxGa1-xN, with the tunable direct bandgaps from ultraviolet to near infrared region, offers a promising candidate for the high-efficiency next-generation thin-film photovoltaic applications. Although the adoption of thick InGaN film as the active region is desirable to obtain efficient light absorption and carrier collection compared to InGaN/GaN quantum wells structure, the understanding on the effect from structural design is still unclear due to the poor-quality InGaN films with thickness and difficulty of p-type doping. In this paper, we comprehensively investigate the effects from film epitaxy, doping, and device structural design on the performances of the InGaN-based solar cells. The high-quality InGaN thick film is obtained on AlN/sapphire template, and p-In0.08Ga0.92N is achieved with a high hole concentration of more than 1018 cm-3. The dependence of the photovoltaic performances on different structures, such as active regions and p-type regions is analyzed with respect to the carrier transport mechanism in the dark and under illumination. The strategy of improving the p-i interface by using a super-thin AlN interlayer is provided, which successfully enhances the performance of the solar cells.

The Stationary Condensation and Radial Outflow of a Liquid Film on a Horizontal Disk

NASA Technical Reports Server (NTRS)

Bolshinskiy, Leonid; Frenkel, Alexander

2008-01-01

The application of capillary screen liquid acquisition devices to space-based cryogenic propulsion systems is expected to necessitate thermodynamic conditioning in order to stabilize surface tension retention characteristics. The present results have been obtained in the framework of the research of low gravity condensation-flow processes for conditioning cryogenic liquid acquisition devices. The following system is studied: On the top of a subcooled horizontal disk, a liquid film condenses from the ambient saturated vapor. The liquid is forcedly removed at the disk edge, and there is an outward radial flow of the film. Stationary regimes of the flow are uncovered such that (i) the gravity is negligible, being eclipsed by the capillary forces; (ii) the film thickness is everywhere much smaller than the disk radius; and (iii) the slow-flow lubrication approximation is valid. A nonlinear differential equation for the film thickness as a function of the radial coordinate is obtained. The (two-dimensional) fields of velocities, temperature and pressure in the film are explicitly determined by the radial profile of its thickness. The equilibrium is controlled by two parameters: (i) the vapor-disk difference of temperatures and (ii) the liquid exhaust rate. For the flow regimes with a nearly uniform film thickness, the governing equation linearizes, and the film interface is analytically predicted to have a concave-up quartic parabola profile. Thus, perhaps counter-intuitively, the liquid film is thicker at the edge and thinner at the center of the disk.

Film sensor based on cascaded tilted long-period and tilted fiber Bragg grating

NASA Astrophysics Data System (ADS)

Sang, Jiangang; Gu, Zhengtian; Ling, Qiang; Feng, Wenbin

2018-06-01

A film sensor based on a tilted long-period fiber grating (TLPFG) inserted before a tilted fiber Bragg grating (TFBG) is proposed. The sensor is described theoretically using the transfer matrix method. This structure has two reflected peaks in the reflection spectrum. One peak is for the selected recoupled cladding mode of azimuthal order l = 2 and the other one is for the coupled core mode. The tilt angles of the TLPFG and TFBG and the mode order of the l = 2 cladding mode mainly determine the reflected power of the recoupled-(l = 2) cladding-mode peak in the reflection spectrum. By analyzing the relation between the film parameters (film refractive index and film thickness) and reflection spectrum, the characteristics of the film sensor are studied. The results show that this film sensor has a high sensitivity to the film parameters and increases the sensitivity of the film refractive index by two orders of magnitude in comparison with the normal cascaded long-period fiber grating (LPFG) and the fiber Bragg grating (FBG). The resolutions of the refractive index and the thickness of the sensing film are predicted to be 10‑6 and 10‑3 nm.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Simoes, A.Z.; Riccardi, C.S.; Cavalcante, L.S.

The film thickness dependence on the ferroelectric properties of lanthanum modified bismuth titanate Bi{sub 3.25}La{sub 0.75}Ti{sub 3}O{sub 12} was investigated. Films with thicknesses ranging from 230 to 404 nm were grown on platinum-coated silicon substrates by the polymeric precursor method. The internal strain is strongly influenced by the film thickness. The morphology of the film changes as the number of layers increases indicating a thickness dependent grain size. The leakage current, remanent polarization and drive voltage were also affected by the film thickness.

Photothermal measurement of absorption and scattering losses in thin films excited by surface plasmons.

PubMed

Domené, Esteban A; Balzarotti, Francisco; Bragas, Andrea V; Martínez, Oscar E

2009-12-15

We present a novel noncontact, photothermal technique, based on the focus error signal of a commercial CD pickup head that allows direct determination of absorption in thin films. Combined with extinction methods, this technique yields the scattering contribution to the losses. Surface plasmon polaritons are excited using the Kretschmann configuration in thin Au films of varying thickness. By measuring the extinction and absorption simultaneously, it is shown that dielectric constants and thickness retrieval leads to inconsistencies if the model does not account for scattering.

Nanomechanical investigation of thin-film electroceramic/metal-organic framework multilayers

NASA Astrophysics Data System (ADS)

Best, James P.; Michler, Johann; Liu, Jianxi; Wang, Zhengbang; Tsotsalas, Manuel; Maeder, Xavier; Röse, Silvana; Oberst, Vanessa; Liu, Jinxuan; Walheim, Stefan; Gliemann, Hartmut; Weidler, Peter G.; Redel, Engelbert; Wöll, Christof

2015-09-01

Thin-film multilayer stacks of mechanically hard magnetron sputtered indium tin oxide (ITO) and mechanically soft highly porous surface anchored metal-organic framework (SURMOF) HKUST-1 were studied using nanoindentation. Crystalline, continuous, and monolithic surface anchored MOF thin films were fabricated using a liquid-phase epitaxial growth method. Control over respective fabrication processes allowed for tuning of the thickness of the thin film systems with a high degree of precision. It was found that the mechanical indentation of such thin films is significantly affected by the substrate properties; however, elastic parameters were able to be decoupled for constituent thin-film materials (EITO ≈ 96.7 GPa, EHKUST-1 ≈ 22.0 GPa). For indentation of multilayer stacks, it was found that as the layer thicknesses were increased, while holding the relative thickness of ITO and HKUST-1 constant, the resistance to deformation was significantly altered. Such an observation is likely due to small, albeit significant, changes in film texture, interfacial roughness, size effects, and controlling deformation mechanism as a result of increasing material deposition during processing. Such effects may have consequences regarding the rational mechanical design and utilization of MOF-based hybrid thin-film devices.

Evolution of microstructure, strain and physical properties in oxide nanocomposite films

DOE PAGES

Chen, Aiping; Weigand, Marcus; Bi, Zhenxing; ...

2014-06-24

Using LSMO:ZnO nanocomposite films as a model system, we have researched the effect of film thickness on the physical properties of nanocomposites. It shows that strain, microstructure, as well as magnetoresistance strongly rely on film thickness. The magnetotransport properties have been fitted by a modified parallel connection channel model, which is in agreement with the microstructure evolution as a function of film thickness in nanocomposite films on sapphire substrates. The strain analysis indicates that the variation of physical properties in nanocomposite films on LAO is dominated by strain effect. These results confirm the critical role of film thickness on microstructures,more » strain states, and functionalities. Furthermore, it shows that one can use film thickness as a key parameter to design nanocomposites with optimum functionalities.« less

X-ray diffraction and Raman investigations of thickness dependent stress effects on Pb(ZrxTi1-x)O3 thin films

NASA Astrophysics Data System (ADS)

Lappalainen, Jyrki; Lantto, Vilho; Frantti, Johannes; Hiltunen, Jussi

2006-06-01

Microstructure, film orientation, and optical transmission spectra of polycrystalline Nd-modified Pb(ZrxTi1-x)O3 films were studied as a function of film thickness. Pulsed laser deposition was used for the fabrication of films with thickness from 80to465nm on single-crystal MgO(100) substrates. Raman spectroscopy, x-ray diffraction, and spectrophotometry measurements were utilized in the film characterization. With the decreasing film thickness, films first oriented with c axis perpendicular to film surface, and then, after some critical thickness, changed to a-axis orientation. At the same time, compressive stress increased up to 1.3GPa and a clear blueshift of the optical absorption edge was found in transmission spectra.

An automatic device for detection and classification of malaria parasite species in thick blood film.

PubMed

Kaewkamnerd, Saowaluck; Uthaipibull, Chairat; Intarapanich, Apichart; Pannarut, Montri; Chaotheing, Sastra; Tongsima, Sissades

2012-01-01

Current malaria diagnosis relies primarily on microscopic examination of Giemsa-stained thick and thin blood films. This method requires vigorously trained technicians to efficiently detect and classify the malaria parasite species such as Plasmodium falciparum (Pf) and Plasmodium vivax (Pv) for an appropriate drug administration. However, accurate classification of parasite species is difficult to achieve because of inherent technical limitations and human inconsistency. To improve performance of malaria parasite classification, many researchers have proposed automated malaria detection devices using digital image analysis. These image processing tools, however, focus on detection of parasites on thin blood films, which may not detect the existence of parasites due to the parasite scarcity on the thin blood film. The problem is aggravated with low parasitemia condition. Automated detection and classification of parasites on thick blood films, which contain more numbers of parasite per detection area, would address the previous limitation. The prototype of an automatic malaria parasite identification system is equipped with mountable motorized units for controlling the movements of objective lens and microscope stage. This unit was tested for its precision to move objective lens (vertical movement, z-axis) and microscope stage (in x- and y-horizontal movements). The average precision of x-, y- and z-axes movements were 71.481 ± 7.266 μm, 40.009 ± 0.000 μm, and 7.540 ± 0.889 nm, respectively. Classification of parasites on 60 Giemsa-stained thick blood films (40 blood films containing infected red blood cells and 20 control blood films of normal red blood cells) was tested using the image analysis module. By comparing our results with the ones verified by trained malaria microscopists, the prototype detected parasite-positive and parasite-negative blood films at the rate of 95% and 68.5% accuracy, respectively. For classification performance, the thick blood films with Pv parasite was correctly classified with the success rate of 75% while the accuracy of Pf classification was 90%. This work presents an automatic device for both detection and classification of malaria parasite species on thick blood film. The system is based on digital image analysis and featured with motorized stage units, designed to easily be mounted on most conventional light microscopes used in the endemic areas. The constructed motorized module could control the movements of objective lens and microscope stage at high precision for effective acquisition of quality images for analysis. The analysis program could accurately classify parasite species, into Pf or Pv, based on distribution of chromatin size.

The potential of cashew gum functionalization as building blocks for layer-by-layer films.

PubMed

Leite, Álvaro J; Costa, Rui R; Costa, Ana M S; Maciel, Jeanny S; Costa, José F G; de Paula, Regina C M; Mano, João F

2017-10-15

Cashew gum (CG), an exudate polysaccharide from Anacardium occidentale trees, was carboxymethylated (CGCm) and oxidized (CGO). These derivatives were characterized by FTIR and zeta potential measurements confirming the success of carboxymethylation and oxidation reactions. Nanostructured multilayered films were then produced through layer-by-layer (LbL) assembly in conjugation with chitosan via electrostatic interactions or Schiff bases covalent bonds. The films were analyzed by QCM-D and AFM. CG functionalization increased the film thickness, with the highest thickness being achieved for the lowest oxidation degree. The roughest surface was obtained for the CGO with the highest oxidation degree due to the predominance of covalent Schiff bases. This work shows that nanostructured films can be assembled and stabilized by covalent bonds in alternative to the conventional electrostatic ones. Moreover, the functionalization of CG can increase its feasibility in multilayers films, widening its potential in biomedical, food industry, or environmental applications. Copyright © 2017 Elsevier Ltd. All rights reserved.

Changes in the temperature-dependent specific volume of supported polystyrene films with film thickness.

PubMed

Huang, Xinru; Roth, Connie B

2016-06-21

Recent studies have measured or predicted thickness-dependent shifts in density or specific volume of polymer films as a possible means of understanding changes in the glass transition temperature Tg(h) with decreasing film thickness with some experimental works claiming unrealistically large (25%-30%) increases in film density with decreasing thickness. Here we use ellipsometry to measure the temperature-dependent index of refraction of polystyrene (PS) films supported on silicon and investigate the validity of the commonly used Lorentz-Lorenz equation for inferring changes in density or specific volume from very thin films. We find that the density (specific volume) of these supported PS films does not vary by more than ±0.4% of the bulk value for film thicknesses above 30 nm, and that the small variations we do observe are uncorrelated with any free volume explanation for the Tg(h) decrease exhibited by these films. We conclude that the derivation of the Lorentz-Lorenz equation becomes invalid for very thin films as the film thickness approaches ∼20 nm, and that reports of large density changes greater than ±1% of bulk for films thinner than this likely suffer from breakdown in the validity of this equation or in the difficulties associated with accurately measuring the index of refraction of such thin films. For larger film thicknesses, we do observed small variations in the effective specific volume of the films of 0.4 ± 0.2%, outside of our experimental error. These shifts occur simultaneously in both the liquid and glassy regimes uniformly together starting at film thicknesses less than ∼120 nm but appear to be uncorrelated with Tg(h) decreases; possible causes for these variations are discussed.

Sputtered silver films to improve chromium carbide based solid lubricant coatings for use to 900 C

NASA Technical Reports Server (NTRS)

Dellacorte, Christopher; Sliney, Harold E.; Deadmore, Daniel L.

1988-01-01

Thin silver films, 250 to 3500 A thick, were sputtered onto PS200, a plasma sprayed, chromium carbide based solid lubricant coating, to reduce run-in wear and improve tribological properties. The coating contains bonded chromium carbide as the wear resistant base stock with silver and barium fluoride/calcium fluoride eutectic added as low and high temperature lubricants, respectively. Potential applications for the PS200 coating are cylinder wall/piston ring lubrication for Stirling engines and foil bearing journal lubrication. In this preliminary program, the silver film overlay thickness was optimized based on tests using a pin-on-disk tribometer. The friction and wear studies were performed in a helium atmosphere at temperatures from 25 to 760 C with a sliding velocity of 2.7 m/s under a 4.9 N load. Films between 1000 and 1500 A provide the best lubrication of the counterface material. The films enrich the sliding surface with lubricant and reduce the initial abrasiveness of the as ground, plasma-sprayed coating surface, thus reducing wear.

Sputtered silver films to improve chromium carbide based solid lubricant coatings for use to 900 C

NASA Technical Reports Server (NTRS)

Dellacorte, Christopher; Sliney, Harold E.; Deadmore, Daniel L.

1988-01-01

Thin silver films, 250 to 3500 A thick, were sputtered onto PS200, a plasma sprayed, chromium carbide based solid lubricant coating, to reduce run-in wear and improve tribological properties. The coating contains bonded chromium carbide as the wear resistant base stock with silver and barium fluoride/calcium fluoride eutectic added as low and high temperature lubricants respectively. Potential applications for the PS200 coating are cylinder wall/piston ring lubrication for Stirling engines and foil bearing journal lubrication. In this preliminary program, the silver film overlay thickness was optimized based on tests using a pin-on-disk tribometer. The friction and wear studies were performed in a helium atmosphere at temperatures from 25 to 760 C with a sliding velocity of 2.7 m/s under a 4.9 N load. Films between 1000 and 1500 A provide the best lubrication of the counterface material. The films enrich the sliding surface with lubricant and reduce the initial abrasiveness of the as ground, plasma-sprayed coating surface, thus reducing wear.

Dependencies of microstructure and stress on the thickness of GdBa2Cu3O7 − δ thin films fabricated by RF sputtering

PubMed Central

2013-01-01

GdBa2Cu3O7 − δ (GdBCO) films with different thicknesses from 200 to 2,100 nm are deposited on CeO2/yttria-stabilized zirconia (YSZ)/CeO2-buffered Ni-W substrates by radio-frequency magnetron sputtering. Both the X-ray diffraction and scanning electron microscopy analyses reveal that the a-axis grains appear at the upper layers of the films when the thickness reaches to 1,030 nm. The X-ray photoelectron spectroscopy measurement implies that the oxygen content is insufficient in upper layers beyond 1,030 nm for a thicker film. The Williamson-Hall method is used to observe the variation of film stress with increasing thickness of our films. It is found that the highest residual stresses exist in the thinnest film, while the lowest residual stresses exist in the 1,030-nm-thick film. With further increasing film thickness, the film residual stresses increase again. However, the critical current (Ic) of the GdBCO film first shows a nearly linear increase and then shows a more slowly enhancing to a final stagnation as film thickness increases from 200 to 1,030 nm and then to 2,100 nm. It is concluded that the roughness and stress are not the main reasons which cause the slow or no increase in Ic. Also, the thickness dependency of GdBa2Cu3O7 − δ films on the Ic is attributed to three main factors: a-axis grains, gaps between a-axis grains, and oxygen deficiency for the upper layers of a thick film. PMID:23816137

Thermochromic VO2 thin films: solution-based processing, improved optical properties, and lowered phase transformation temperature.

PubMed

Zhang, Zongtao; Gao, Yanfeng; Chen, Zhang; Du, Jing; Cao, Chuanxiang; Kang, Litao; Luo, Hongjie

2010-07-06

This paper describes a solution-phase synthesis of high-quality vanadium dioxide thermochromic thin films. The films obtained showed excellent visible transparency and a large change in transmittance at near-infrared (NIR) wavelengths before and after the metal-insulator phase transition (MIPT). For a 59 nm thick single-layer VO(2) thin film, the integral values of visible transmittance (T(int)) for metallic (M) and semiconductive (S) states were 54.1% and 49.1%, respectively, while the NIR switching efficiencies (DeltaT) were as high as 50% at 2000 nm. Thinner films can provide much higher transmittance of visible light, but they suffer from an attenuation of the switching efficiency in the near-infrared region. By varying the film thickness, ultrahigh T(int) values of 75.2% and 75.7% for the M and S states, respectively, were obtained, while the DeltaT at 2000 nm remained high. These results represent the best data for VO(2) to date. Thicker films in an optimized range can give enhanced NIR switching efficiencies and excellent NIR blocking abilities; in a particularly impressive experiment, one film provided near-zero NIR transmittance in the switched state. The thickness-dependent performance suggests that VO(2) will be of great use in the objective-specific applications. The reflectance and emissivity at the wavelength range of 2.5-25 microm before and after the MIPT were dependent on the film thickness; large contrasts were observed for relatively thick films. This work also showed that the MIPT temperature can be reduced simply by selecting the annealing temperature that induces local nonstoichiometry; a MIPT temperature as low as 42.7 degrees C was obtained by annealing the film at 440 degrees C. These properties (the high visible transmittance, the large change in infrared transmittance, and the near room-temperature MIPT) suggest that the current method is a landmark in the development of this interesting material toward applications in energy-saving smart windows.

Ultralow Damping in Nanometer-Thick Epitaxial Spinel Ferrite Thin Films.

PubMed

Emori, Satoru; Yi, Di; Crossley, Sam; Wisser, Jacob J; Balakrishnan, Purnima P; Khodadadi, Behrouz; Shafer, Padraic; Klewe, Christoph; N'Diaye, Alpha T; Urwin, Brittany T; Mahalingam, Krishnamurthy; Howe, Brandon M; Hwang, Harold Y; Arenholz, Elke; Suzuki, Yuri

2018-06-08

Pure spin currents, unaccompanied by dissipative charge flow, are essential for realizing energy-efficient nanomagnetic information and communications devices. Thin-film magnetic insulators have been identified as promising materials for spin-current technology because they are thought to exhibit lower damping compared with their metallic counterparts. However, insulating behavior is not a sufficient requirement for low damping, as evidenced by the very limited options for low-damping insulators. Here, we demonstrate a new class of nanometer-thick ultralow-damping insulating thin films based on design criteria that minimize orbital angular momentum and structural disorder. Specifically, we show ultralow damping in <20 nm thick spinel-structure magnesium aluminum ferrite (MAFO), in which magnetization arises from Fe 3+ ions with zero orbital angular momentum. These epitaxial MAFO thin films exhibit a Gilbert damping parameter of ∼0.0015 and negligible inhomogeneous linewidth broadening, resulting in narrow half width at half-maximum linewidths of ∼0.6 mT around 10 GHz. Our findings offer an attractive thin-film platform for enabling integrated insulating spintronics.

Optical resonance analysis of reflected long period fiber gratings with metal film overlay

NASA Astrophysics Data System (ADS)

Zhang, Guiju; Cao, Bing; Wang, Chinua; Zhao, Minfu

2008-11-01

We present the experimental results of a novel single-ended reflecting surface plasma resonance (SPR) based long period fiber grating (LPFG) sensor. A long period fiber grating sensing device is properly designed and fabricated with a pulsed CO2 laser writing system. Different nm-thick thin metal films are deposited on the fiber cladding and the fiber end facet for the excitation of surface plasma waves (SPWs) and the reflection of the transmission spectrum of the LPFG with doubled interaction between metal-dielectric interfaces of the fiber to enhance the SPW of the all-fiber SPR-LPFG sensing system. Different thin metal films with different thicknesses are investigated. The effect of the excited SPW transmission along the fiber cladding-metal interface with silver and aluminum films is observed. It is found that different thicknesses of the metal overlay show different resonant behaviors in terms of resonance peak situation, bandwidth and energy loss. Within a certain range, thinner metal film shows narrower bandwidth and deeper peak loss.

The chocolate-egg problem: Fabrication of thin elastic shells through coating

NASA Astrophysics Data System (ADS)

Lee, Anna; Marthelot, Joel; Brun, Pierre-Thomas; Reis, Pedro M.

2015-03-01

We study the fabrication of thin polymeric shells based on the coating of a curved surface by a viscous fluid. Upon polymerization of the resulting thin film, a slender solid structure is delivered after demolding. This technique is extensively used, empirically, in manufacturing, where it is known as rotational molding, as well as in the food industry, e.g. for chocolate-eggs. This problem is analogous to the Landau-Levich-Derjaguin coating of plates and fibers and Bretherton's problem of film deposition in cylindrical channels, albeit now on a double-curved geometry. Here, the balance between gravity, viscosity, surface tension and polymerization rate can yield a constant thickness film. We seek to identify the physical ingredients that govern the final film thickness and its profile. In our experiments using organosilicon, we systematically vary the properties of the fluid, as well as the curvature of the substrate onto which the film is coated, and characterize the final thickness profile of the shells. A reduced model is developed to rationalize the process.

Pore-scale analysis of the minimum liquid film thickness around elongated bubbles in confined gas-liquid flows

NASA Astrophysics Data System (ADS)

Magnini, M.; Beisel, A. M.; Ferrari, A.; Thome, J. R.

2017-11-01

The fluid mechanics of elongated bubbles in confined gas-liquid flows in micro-geometries is important in pore-scale flow processes for enhanced oil recovery and mobilization of colloids in unsaturated soil. The efficiency of such processes is traditionally related to the thickness of the liquid film trapped between the elongated bubble and the pore's wall, which is assumed constant. However, the surface of long bubbles presents undulations in the vicinity of the rear meniscus, which may significantly decrease the local thickness of the liquid film, thus impacting the process of interest. This study presents a systematic analysis of these undulations and the minimum film thickness induced in the range Ca = 0.001- 0.5 and Re = 0.1- 2000 . Pore-scale Computational Fluid Dynamics (CFD) simulations are performed with a self-improved version of the opensource solver ESI OpenFOAM which is based on a Volume of Fluid method to track the gas-liquid interface. A lubrication model based on the extension of the classical axisymmetric Bretherton theory is utilized to better understand the CFD results. The profiles of the rear meniscus of the bubble obtained with the lubrication model agree fairly well with those extracted from the CFD simulations. This study shows that the Weber number of the flow, We = Ca Re , is the parameter that best describes the dynamics of the interfacial waves. When We < 0.1, a single wave crest is observed and the minimum film thickness tends to an asymptotic value, which depends on the capillary number, as We → 0. Undulations dampen as the capillary number increases and disappear completely when Ca = 0.5 . When We > 0.1, a larger number of wave crests becomes evident on the surface of the rear meniscus of the bubble. The liquid film thickness at the crests of the undulations thins considerably as the Reynolds number is increased, down to less than 60% of the value measured in the flat film region. This may significantly influence important environmental processes, such as the detachment and mobilization of micron-sized pollutants and pathogenic micro-organisms adhering at the pore's wall in unsaturated soil.

Electrochemical deposition of layered copper thin films based on the diffusion limited aggregation

PubMed Central

Wei, Chenhuinan; Wu, Guoxing; Yang, Sanjun; Liu, Qiming

2016-01-01

In this work layered copper films with smooth surface were successfully fabricated onto ITO substrate by electrochemical deposition (ECD) and the thickness of the films was nearly 60 nm. The resulting films were characterized by SEM, TEM, AFM, XPS, and XRD. We have investigated the effects of potential and the concentration of additives and found that 2D dendritic-like growth process leaded the formation of films. A suitable growth mechanism based on diffusion limited aggregation (DLA) mechanism for the copper films formation is presented, which are meaningful for further designing homogeneous and functional films. PMID:27734900

Thin Cu film resistivity using four probe techniques: Effect of film thickness and geometrical shapes

NASA Astrophysics Data System (ADS)

Choudhary, Sumita; Narula, Rahul; Gangopadhyay, Subhashis

2018-05-01

Precise measurement of electrical sheet resistance and resistivity of metallic thin Cu films may play a significant role in temperature sensing by means of resistivity changes which can further act as a safety measure of various electronic devices during their operation. Four point probes resistivity measurement is a useful approach as it successfully excludes the contact resistance between the probes and film surface of the sample. Although, the resistivity of bulk samples at a particular temperature mostly depends on its materialistic property, however, it may significantly differ in the case of thin films, where the shape and thickness of the sample can significantly influence on it. Depending on the ratio of the film thickness to probe spacing, samples are usually classified in two segments such as (i) thick films or (ii) thin films. Accordingly, the geometric correction factors G can be related to the sample resistivity r, which has been calculated here for thin Cu films of thickness up to few 100 nm. In this study, various rectangular shapes of thin Cu films have been used to determine the shape induced geometric correction factors G. An expressions for G have been obtained as a function of film thickness t versus the probe spacing s. Using these expressions, the correction factors have been plotted separately for each cases as a function of (a) film thickness for fixed linear probe spacing and (b) probe distance from the edge of the film surface for particular thickness. Finally, we compare the experimental results of thin Cu films of various rectangular geometries with the theoretical reported results.

Effect of film thickness on NO2 gas sensing properties of sprayed orthorhombic nanocrystalline V2O5 thin films

NASA Astrophysics Data System (ADS)

Mane, A. A.; Moholkar, A. V.

2017-09-01

The nanocrystalline V2O5 thin films with different thicknesses have been grown onto the glass substrates using chemical spray pyrolysis (CSP) deposition method. The XRD study shows that the films exhibit an orthorhombic crystal structure. The narrow scan X-ray photoelectron spectrum of V-2p core level doublet gives the binding energy difference of 7.3 eV, indicating that the V5+ oxidation state of vanadium. The FE-SEM micrographs show the formation of nanorods-like morphology. The AFM micrographs show the high surface area to volume ratio of nanocrystalline V2O5 thin films. The optical study gives the band gap energy values of 2.41 eV, 2.44 eV, 2.47 eV and 2.38 eV for V2O5 thin films deposited with the thicknesses of 423 nm, 559 nm, 694 nm and 730 nm, respectively. The V2O5 film of thickness 559 nm shows the NO2 gas response of 41% for 100 ppm concentration at operating temperature of 200 °C with response and recovery times of 20 s and 150 s, respectively. Further, it shows the rapid response and reproducibility towards 10 ppm NO2 gas concentration at 200 °C. Finally, NO2 gas sensing mechanism based on chemisorption process is discussed.

Thickness Dependent Structural and Dielectric Properties of Calcium Copper Titanate Thin Films Produced by Spin-Coating Method for Microelectronic Devices

NASA Astrophysics Data System (ADS)

Thiruramanathan, P.; Sankar, S.; Marikani, A.; Madhavan, D.; Sharma, Sanjeev K.

2017-07-01

Calcium copper titanate (CaCu3Ti4O12, CCTO) thin films have been deposited on platinized silicon [(111)Pt/Ti/SiO2/Si] substrate through a sol-gel spin coating technique and annealed at 600-900°C with a variation of 100°C per sample for 3 h. The activation energy for crystalline growth, as well as optimal annealing temperature (900°C) of the CCTO crystallites was studied by x-ray diffraction analysis (XRD). Thickness dependent structural, morphological, and optical properties of CCTO thin films were observed. The field emission scanning electron microscopy (FE-SEM) verified that the CCTO thin films are uniform, fully covered, densely packed, and the particle size was found to be increased with film thickness. Meanwhile, quantitative analysis of dielectric properties (interfacial capacitance, dead layers, and bulk dielectric constant) of CCTO thin film with metal-insulator-metal (M-I-M) structures has been investigated systematically using a series capacitor model. Room temperature dielectric properties of all the samples exhibit dispersion at low frequencies, which can be explained based on Maxwell-Wagner two-layer models and Koop's theory. It was found that the 483 nm thick CCTO film represents a high dielectric constant ( ɛ r = 3334), low loss (tan δ = 3.54), capacitance ( C = 4951 nF), which might satisfy the requirements of embedded capacitor.

The application of the barrier-type anodic oxidation method to thickness testing of aluminum films

NASA Astrophysics Data System (ADS)

Chen, Jianwen; Yao, Manwen; Xiao, Ruihua; Yang, Pengfei; Hu, Baofu; Yao, Xi

2014-09-01

The thickness of the active metal oxide film formed from a barrier-type anodizing process is directly proportional to its formation voltage. The thickness of the consumed portion of the metal film is also corresponding to the formation voltage. This principle can be applied to the thickness test of the metal films. If the metal film is growing on a dielectric substrate, when the metal film is exhausted in an anodizing process, because of the high electrical resistance of the formed oxide film, a sudden increase of the recorded voltage during the anodizing process would occur. Then, the thickness of the metal film can be determined from this voltage. As an example, aluminum films are tested and discussed in this work. This method is quite simple and is easy to perform with high precision.

System for measuring film thickness

DOEpatents

Batishko, Charles R.; Kirihara, Leslie J.; Peters, Timothy J.; Rasmussen, Donald E.

1990-01-01

A system for determining the thicknesses of thin films of materials exhibiting fluorescence in response to exposure to excitation energy from a suitable source of such energy. A section of film is illuminated with a fixed level of excitation energy from a source such as an argon ion laser emitting blue-green light. The amount of fluorescent light produced by the film over a limited area within the section so illuminated is then measured using a detector such as a photomultiplier tube. Since the amount of fluorescent light produced is a function of the thicknesses of thin films, the thickness of a specific film can be determined by comparing the intensity of fluorescent light produced by this film with the intensity of light produced by similar films of known thicknesses in response to the same amount of excitation energy. The preferred embodiment of the invention uses fiber optic probes in measuring the thicknesses of oil films on the operational components of machinery which are ordinarily obscured from view.

Novel Ballistic Processing of Sn-0.7Cu Thick Films

NASA Astrophysics Data System (ADS)

Cavero, D.; Stewart, K.; Morsi, K.

2017-01-01

The present paper discusses a novel process (Ballistic Processing) for the ultra-rapid processing of textured and un-textured thick and potentially thin films. The effect of processing velocity (14.6 to 36.1 m/s) on the developed external structure and internal microstructure of Sn-0.7Cu thick film is discussed. Film thicknesses ranging from 6.08 to 12.79 μm were produced and characterized by two-dimensional hypoeutectic microstructures. Both film thickness and dendrite arm spacing decreased with an increase in processing velocity.

Surface plasmon holographic microscopy for near-field refractive index detection and thin film mapping

NASA Astrophysics Data System (ADS)

Zhao, Jianlin; Zhang, Jiwei; Dai, Siqing; Di, Jianglei; Xi, Teli

2018-02-01

Surface plasmon microscopy (SPM) is widely applied for label-free detection of changes of refractive index and concentration, as well as mapping thin films in near field. Traditionally, the SPM systems are based on the detection of light intensity or phase changes. Here, we present two kinds of surface plasmon holographic microscopy (SPHM) systems for amplitude- and phase-contrast imaging simultaneously. Through recording off-axis holograms and numerical reconstruction, the complex amplitude distributions of surface plasmon resonance (SPR) images can be obtained. According to the Fresnel's formula, in a prism/ gold/ dielectric structure, the reflection phase shift is uniquely decided by refractive index of the dielectric. By measuring the phase shift difference of the reflected light exploiting prism-coupling SPHM system based on common-path interference configuration, monitoring tiny refractive index variation and imaging biological tissue are performed. Furthermore, to characterize the thin film thickness in near field, we employ a four-layer SPR model in which the third film layer is within the evanescent field. The complex reflection coefficient, including the reflectivity and reflection phase shift, is uniquely decided by the film thickness. By measuring the complex amplitude distributions of the SPR images exploiting objective-coupling SPHM system based on common-path interference configuration, the thickness distributions of thin films are mapped with sub-nanometer resolution theoretically. Owing to its high temporal stability, the recommended SPHMs show great potentials for monitoring tiny refractive index variations, imaging biological tissues and mapping thin films in near field with dynamic, nondestructive and full-field measurement capabilities in chemistry, biomedicine field, etc.

Polymer nanomechanics: Separating the size effect from the substrate effect in nanoindentation

NASA Astrophysics Data System (ADS)

Li, Le; Encarnacao, Lucas M.; Brown, Keith A.

2017-01-01

While the moduli of thin polymer films are known to deviate dramatically from their bulk values, there is not a consensus regarding the nature of this size effect. In particular, indenting experiments appear to contradict results from both buckling experiments and molecular dynamics calculations. In this letter, we present a combined computational and experimental method for measuring the modulus of nanoindented soft films on rigid substrates that reconciles this discrepancy. Through extensive finite element simulation, we determine a correction to the Hertzian contact model that separates the substrate effect from the thickness-dependent modulus of the film. Interestingly, this correction only depends upon a dimensionless film thickness and the Poisson ratio of the film. To experimentally test this approach, we prepared poly(methyl methacrylate), polystyrene, and parylene films with thicknesses ranging from 20 to 300 nm and studied these films using atomic force microscope-based nanoindenting. Strikingly, when experiments were interpreted using the computationally derived substrate correction, sub-70 nm films were found to be softer than bulk, in agreement with buckling experiments and molecular dynamics studies. This correction can serve as a general method for unambiguously determining the size effect of thin polymer films and ultimately lead to the ability to quantitatively image the mechanical properties of heterogeneous materials such as composites.

Low Temperature Annealed Zinc Oxide Nanostructured Thin Film-Based Transducers: Characterization for Sensing Applications

PubMed Central

Haarindraprasad, R.; Hashim, U.; Gopinath, Subash C. B.; Kashif, Mohd; Veeradasan, P.; Balakrishnan, S. R.; Foo, K. L.; Poopalan, P.

2015-01-01

The performance of sensing surfaces highly relies on nanostructures to enhance their sensitivity and specificity. Herein, nanostructured zinc oxide (ZnO) thin films of various thicknesses were coated on glass and p-type silicon substrates using a sol-gel spin-coating technique. The deposited films were characterized for morphological, structural, and optoelectronic properties by high-resolution measurements. X-ray diffraction analyses revealed that the deposited films have a c-axis orientation and display peaks that refer to ZnO, which exhibits a hexagonal structure with a preferable plane orientation (002). The thicknesses of ZnO thin films prepared using 1, 3, 5, and 7 cycles were measured to be 40, 60, 100, and 200 nm, respectively. The increment in grain size of the thin film from 21 to 52 nm was noticed, when its thickness was increased from 40 to 200 nm, whereas the band gap value decreased from 3.282 to 3.268 eV. Band gap value of ZnO thin film with thickness of 200 nm at pH ranging from 2 to 10 reduces from 3.263eV to 3.200 eV. Furthermore, to evaluate the transducing capacity of the ZnO nanostructure, the refractive index, optoelectric constant, and bulk modulus were analyzed and correlated. The highest thickness (200 nm) of ZnO film, embedded with an interdigitated electrode that behaves as a pH-sensing electrode, could sense pH variations in the range of 2-10. It showed a highly sensitive response of 444 μAmM-1cm-2 with a linear regression of R2 =0.9304. The measured sensitivity of the developed device for pH per unit is 3.72μA/pH. PMID:26167853

Improved epitaxial texture of thick YBa2Cu3O7-δ/GdBa2Cu3O7-δ films with periodic stress releasing

NASA Astrophysics Data System (ADS)

Lin, Jianxin; Yang, Wentao; Gu, Zhaohui; Shu, Gangqiang; Li, Minjuan; Sang, Lina; Guo, Yanqun; Liu, Zhiyong; Cai, Chuanbing

2015-04-01

Thick high-Tc superconducting films consisting of a YBa2Cu3O7-δ/GdBa2Cu3O7-δ periodic architecture are developed on oxid-buffered Hastelloy tapes using a pulsed laser deposition process. It is revealed that multilayer intermittent structures for superconducting layers are effective to avoid the presence of a-axis grains and microcracks that occur with increasing thickness, which are frequently observed in monolayer films of REBa2Cu3O7-δ (RE = Y, Gd, or other rare earths), such grains and cracks being the significant challenge for obtaining high critical current in coated conductors. Presently, the thicknesses of multilayer films vary from 0.5 μm to 3 μm and, based on the SEM images and x-ray φ-scans, hardly show the influences on the microstructures and grain orientation of the c-axis. Also, the characteristic Raman spectrum patterns and their shifting with increasing the thickness of YBCO/GdBCO imply that the superior texture is obtained due to the evolution of stress dominated by the compressive stress rather than tensile stress.

Properties of thin silver films with different thickness

NASA Astrophysics Data System (ADS)

Zhao, Pei; Su, Weitao; Wang, Reng; Xu, Xiaofeng; Zhang, Fengshan

2009-01-01

In order to investigate optical properties of silver films with different film thickness, multilayer composed of thin silver film sandwiched between ZnS films are sputtered on the float glass. The crystal structures, optical and electrical properties of films are characterized by various techniques, such as X-ray diffraction (XRD), spectrum analysis, etc. The optical constants of thin silver film are calculated by fitting the transmittance ( T) and reflectance ( R) spectrum of the multilayer. Electrical and optical properties of silver films thinner than 6.2 nm exhibit sharp change. However, variation becomes slow as film thickness is larger than 6.2 nm. The experimental results indicate that 6.2 nm is the optimum thickness for properties of silver.

Tensile and fatigue behaviors of printed Ag thin films on flexible substrates

NASA Astrophysics Data System (ADS)

Sim, Gi-Dong; Won, Sejeong; Lee, Soon-Bok

2012-11-01

Flexible electronics using nanoparticle (NP) printing has been highlighted as a key technology enabling eco-friendly, low-cost, and large-area fabrication. For NP-based printing to be used as a successive alternative to photolithography and vacuum deposition, stretchability and long term reliability must be considered. This paper reports the stretchability and fatigue behavior of 100 nm thick NP-based silver thin films printed on polyethylene-terephthalate substrate and compares it to films deposited by electron-beam evaporation. NP-based films show stretchability and fatigue life comparable to evaporated films with intergranular fracture as the dominant failure mechanism.

Theoretical and empirical investigations of KCl:Eu2+ for nearly water-equivalent radiotherapy dosimetry

PubMed Central

Zheng, Yuanshui; Han, Zhaohui; Driewer, Joseph P.; Low, Daniel A.; Li, H. Harold

2010-01-01

Purpose: The low effective atomic number, reusability, and other computed radiography-related advantages make europium doped potassium chloride (KCl:Eu2+) a promising dosimetry material. The purpose of this study is to model KCl:Eu2+ point dosimeters with a Monte Carlo (MC) method and, using this model, to investigate the dose responses of two-dimensional (2D) KCl:Eu2+ storage phosphor films (SPFs). Methods: KCl:Eu2+ point dosimeters were irradiated using a 6 MV beam at four depths (5–20 cm) for each of five square field sizes (5×5–25×25 cm2). The dose measured by KCl:Eu2+ was compared to that measured by an ionization chamber to obtain the magnitude of energy dependent dose measurement artifact. The measurements were simulated using DOSXYZnrc with phase space files generated by BEAMnrcMP. Simulations were also performed for KCl:Eu2+ films with thicknesses ranging from 1 μm to 1 mm. The work function of the prototype KCl:Eu2+ material was determined by comparing the sensitivity of a 150 μm thick KCl:Eu2+ film to a commercial BaFBr0.85I0.15:Eu2+-based SPF with a known work function. The work function was then used to estimate the sensitivity of a 1 μm thick KCl:Eu2+ film. Results: The simulated dose responses of prototype KCl:Eu2+ point dosimeters agree well with measurement data acquired by irradiating the dosimeters in the 6 MV beam with varying field size and depth. Furthermore, simulations with films demonstrate that an ultrathin KCl:Eu2+ film with thickness of the order of 1 μm would have nearly water-equivalent dose response. The simulation results can be understood using classic cavity theories. Finally, preliminary experiments and theoretical calculations show that ultrathin KCl:Eu2+ film could provide excellent signal in a 1 cGy dose-to-water irradiation. Conclusions: In conclusion, the authors demonstrate that KCl:Eu2+-based dosimeters can be accurately modeled by a MC method and that 2D KCl:Eu2+ films of the order of 1 μm thick would have minimal energy dependence. The data support the future research and development of a KCl:Eu2+ storage phosphor-based system for quantitative, high-resolution multidimensional radiation therapy dosimetry. PMID:20175476

High sensitive formaldehyde graphene gas sensor modified by atomic layer deposition zinc oxide films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mu, Haichuan; Zhang, Zhiqiang; Wang, Keke

2014-07-21

Zinc oxide (ZnO) thin films with various thicknesses were fabricated by Atomic Layer Deposition on Chemical Vapor Deposition grown graphene films and their response to formaldehyde has been investigated. It was found that 0.5 nm ZnO films modified graphene sensors showed high response to formaldehyde with the resistance change up to 52% at the concentration of 9 parts-per-million (ppm) at room temperature. Meanwhile, the detection limit could reach 180 parts-per-billion (ppb) and fast response of 36 s was also obtained. The high sensitivity could be attributed to the combining effect from the highly reactive, top mounted ZnO thin films, and high conductivemore » graphene base network. The dependence of ZnO films surface morphology and its sensitivity on the ZnO films thickness was also investigated.« less

Realistic absorption coefficient of each individual film in a multilayer architecture

NASA Astrophysics Data System (ADS)

Cesaria, M.; Caricato, A. P.; Martino, M.

2015-02-01

A spectrophotometric strategy, termed multilayer-method (ML-method), is presented and discussed to realistically calculate the absorption coefficient of each individual layer embedded in multilayer architectures without reverse engineering, numerical refinements and assumptions about the layer homogeneity and thickness. The strategy extends in a non-straightforward way a consolidated route, already published by the authors and here termed basic-method, able to accurately characterize an absorbing film covering transparent substrates. The ML-method inherently accounts for non-measurable contribution of the interfaces (including multiple reflections), describes the specific film structure as determined by the multilayer architecture and used deposition approach and parameters, exploits simple mathematics, and has wide range of applicability (high-to-weak absorption regions, thick-to-ultrathin films). Reliability tests are performed on films and multilayers based on a well-known material (indium tin oxide) by deliberately changing the film structural quality through doping, thickness-tuning and underlying supporting-film. Results are found consistent with information obtained by standard (optical and structural) analysis, the basic-method and band gap values reported in the literature. The discussed example-applications demonstrate the ability of the ML-method to overcome the drawbacks commonly limiting an accurate description of multilayer architectures.

Research physic-mechanical properties of composite materials on the base of peeled veneer and low density polyethylene

NASA Astrophysics Data System (ADS)

Ibragimov, Aleksandr; Vasilkin, Andrey; Fedotov, Aleksandr

2017-10-01

Use film of LDPE as thermoplastic binder for production of plywood is proposed. Results of physic-mechanical properties of plywood based on the LDPE film of different thicknesses in comparison with conventional thermosetting synthetic binder are presented.

Effects of Thickness, Pulse Duration, and Size of Strip Electrode on Ferroelectric Electron Emission of Lead Zirconate Titanate Films

NASA Astrophysics Data System (ADS)

Yaseen, Muhammad; Ren, Wei; Chen, Xiaofeng; Feng, Yujun; Shi, Peng; Wu, Xiaoqing

2018-02-01

Sol-gel-derived lead zirconate titanate (PZT) thin-film emitters with thickness up to 9.8 μm have been prepared on Pt/TiO2/SiO2/Si wafer via chemical solution deposition with/without polyvinylpyrrolidone (PVP) modification, and the relationship between the film thickness and electron emission investigated. Notable electron emission was observed on application of a trigger voltage of 120 V for PZT film with thickness of 1.1 μm. Increasing the film thickness decreased the threshold field to initiate electron emission for non-PVP-modified films. In contrast, the electron emission behavior of PVP-modified films did not show significant dependence on film thickness, probably due to their porous structure. The emission current increased with decreasing strip width and space between strips. Furthermore, it was observed that increasing the duration of the applied pulse increased the magnitude of the emission current. The stray field on the PZT film thickness was also calculated and found to increase with increasing ferroelectric sample thickness. The PZT emitters were found to be fatigue free up to 105 emission cycles. Saturated emission current of around 25 mA to 30 mA was achieved for the electrode pattern used in this work.

Thin-Film Permanent Magnets for Integrated Electromagnetic Components.

DTIC Science & Technology

1992-06-01

crystallization growth temperature, the self demagnetization energy can be used to favor the growth of crystallites with the easy axes of magnetization ...due to the demagnetization energy. 5 Relatively thick films of Sm-Co based permanent magnet films have been deposited onto precoated sapphire and A12 0...of films with the easy axes of magnetization aligned onto the film plane. The self demagnetization field can only affect the film texture for systems

Programmable digital memory devices based on nanoscale thin films of a thermally dimensionally stable polyimide

NASA Astrophysics Data System (ADS)

Lee, Taek Joon; Chang, Cha-Wen; Hahm, Suk Gyu; Kim, Kyungtae; Park, Samdae; Kim, Dong Min; Kim, Jinchul; Kwon, Won-Sang; Liou, Guey-Sheng; Ree, Moonhor

2009-04-01

We have fabricated electrically programmable memory devices with thermally and dimensionally stable poly(N-(N',N'-diphenyl-N'-1,4-phenyl)-N,N-4,4'-diphenylene hexafluoroisopropylidene-diphthalimide) (6F-2TPA PI) films and investigated their switching characteristics and reliability. 6F-2TPA PI films were found to reveal a conductivity of 1.0 × 10-13-1.0 × 10-14 S cm-1. The 6F-2TPA PI films exhibit versatile memory characteristics that depend on the film thickness. All the PI films are initially present in the OFF state. The PI films with a thickness of >15 to <100 nm exhibit excellent write-once-read-many-times (WORM) (i.e. fuse-type) memory characteristics with and without polarity depending on the thickness. The WORM memory devices are electrically stable, even in air ambient, for a very long time. The devices' ON/OFF current ratio is high, up to 1010. Therefore, these WORM memory devices can provide an efficient, low-cost means of permanent data storage. On the other hand, the 100 nm thick PI films exhibit excellent dynamic random access memory (DRAM) characteristics with polarity. The ON/OFF current ratio of the DRAM devices is as high as 1011. The observed electrical switching behaviors were found to be governed by trap-limited space-charge-limited conduction and local filament formation and further dependent on the differences between the highest occupied molecular orbital and the lowest unoccupied molecular orbital energy levels of the PI film and the work functions of the top and bottom electrodes as well as the PI film thickness. In summary, the excellent memory properties of 6F-2TPA PI make it a promising candidate material for the low-cost mass production of high density and very stable digital nonvolatile WORM and volatile DRAM memory devices.

Programmable digital memory devices based on nanoscale thin films of a thermally dimensionally stable polyimide.

PubMed

Lee, Taek Joon; Chang, Cha-Wen; Hahm, Suk Gyu; Kim, Kyungtae; Park, Samdae; Kim, Dong Min; Kim, Jinchul; Kwon, Won-Sang; Liou, Guey-Sheng; Ree, Moonhor

2009-04-01

We have fabricated electrically programmable memory devices with thermally and dimensionally stable poly(N-(N',N'-diphenyl-N'-1,4-phenyl)-N,N-4,4'-diphenylene hexafluoroisopropylidene-diphthalimide) (6F-2TPA PI) films and investigated their switching characteristics and reliability. 6F-2TPA PI films were found to reveal a conductivity of 1.0 x 10(-13)-1.0 x 10(-14) S cm(-1). The 6F-2TPA PI films exhibit versatile memory characteristics that depend on the film thickness. All the PI films are initially present in the OFF state. The PI films with a thickness of >15 to <100 nm exhibit excellent write-once-read-many-times (WORM) (i.e. fuse-type) memory characteristics with and without polarity depending on the thickness. The WORM memory devices are electrically stable, even in air ambient, for a very long time. The devices' ON/OFF current ratio is high, up to 10(10). Therefore, these WORM memory devices can provide an efficient, low-cost means of permanent data storage. On the other hand, the 100 nm thick PI films exhibit excellent dynamic random access memory (DRAM) characteristics with polarity. The ON/OFF current ratio of the DRAM devices is as high as 10(11). The observed electrical switching behaviors were found to be governed by trap-limited space-charge-limited conduction and local filament formation and further dependent on the differences between the highest occupied molecular orbital and the lowest unoccupied molecular orbital energy levels of the PI film and the work functions of the top and bottom electrodes as well as the PI film thickness. In summary, the excellent memory properties of 6F-2TPA PI make it a promising candidate material for the low-cost mass production of high density and very stable digital nonvolatile WORM and volatile DRAM memory devices.

Thickness dependent structural, optical and electrical properties of Se85In12Bi3 nanochalcogenide thin films

NASA Astrophysics Data System (ADS)

Tripathi, Ravi P.; Zulfequar, M.; Khan, Shamshad A.

2018-04-01

Our aim is to study the thickness dependent effects on structure, electrical and optical properties of Se85In12Bi3 nanochalcogenide thin films. Bulk alloy of Se85In12Bi3 was synthesized by melt-quenching technique. The amorphous as well as glassy nature of Se85In12Bi3 chalcogenide was confirmed by non-isothermal Differential Scanning Calorimetry (DSC) measurements. The nanochalcogenide thin films of thickness 30, 60 and 90 nm were prepared on glass/Si wafer substrate using Physical Vapour Condensation Technique (PVCT). From XRD studies it was found that thin films have amorphous texture. The surface morphology and particle size of films were studied by Field Emission Scanning Electron Microscope (FESEM). From optical studies, different optical parameters were estimated for Se85In12Bi3 thin films at different thickness. It was found that the absorption coefficient (α) and extinction coefficient (k) increases with photon energy and decreases with film thickness. The optical absorption process followed the rule of indirect transitions and optical band gap were found to be increase with film thickness. The value of Urbach energy (Et) and steepness parameter (σ) were also calculated for different film thickness. For electrical studies, dc-conductivity measurement was done at different temperature and activation energy (ΔEc) were determined and found to be increase with film thickness.

Percolation effect in thick film superconductors: Using a Bi(Pb)SrCaCuO based paste to prepare a superconducting planar transformer

NASA Technical Reports Server (NTRS)

Sali, Robert; Harsanyi, Gabor

1995-01-01

A thick film superconductor paste has been developed to study the properties of granulated superconductor materials, to observe the percolation effect and to confirm the theory of the conducting mechanism in the superconducting thick films. This paste was also applied to make a superconducting planar transformer. Due to the T(sub c) and advantageous current density properties the base of the past was chosen to be of Bi(Pb)SrCaCu) system. For contacts a conventional Ag/Pt paste was used. The critical temperature of the samples were between 110 K and 115 K depending on the printed layer thickness. The critical current density -at the boiling temperature of the liquid He- was between 200 - 300 A/sq cm. The R(T) and V(I) functions were measured with different parameters. The results of the measurements have confirmed the theory of conducting mechanism in the material. The percolation structure model has been built and described. As an application, a superconducting planar thick film transformer was planned and produced. Ten windings of the transformer were printed on one side of the alumina substrate and one winding was printed on the other side. The coupling between the two sides was possible through the substrate. The samples did not need special drying and firing parameters. After the preparation, the properties of the transformer were measured. The efficiency ans the losses were determined. Finally, some fundamental advantages and problems of the process were discussed.

Thick-film acoustic emission sensors for use in structurally integrated condition-monitoring applications.

PubMed

Pickwell, Andrew J; Dorey, Robert A; Mba, David

2011-09-01

Monitoring the condition of complex engineering structures is an important aspect of modern engineering, eliminating unnecessary work and enabling planned maintenance, preventing failure. Acoustic emissions (AE) testing is one method of implementing continuous nondestructive structural health monitoring. A novel thick-film (17.6 μm) AE sensor is presented. Lead zirconate titanate thick films were fabricated using a powder/sol composite ink deposition technique and mechanically patterned to form a discrete thick-film piezoelectric AE sensor. The thick-film sensor was benchmarked against a commercial AE device and was found to exhibit comparable responses to simulated acoustic emissions.

Phase-field simulations of thickness-dependent domain stability in PbTiO3 thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sheng, Guang; Hu, Jia-Mian; Zhang, Jinxian

Phase-field approach is used to predict the thickness effect on the domain stability in ferroelectric thin films. The strain relaxation mechanism and critical thickness for dislocation formation from both Matthews-Blakeslee (MB) and People-Bean (PB) models are employed. Thickness - strain domain stability diagrams are obtained for PbTiO3 thin films under different strain relaxation models. The relative domain fractions as a function of film thickness are also calculated and compared with experiment measurements in PbTiO3 thin films grown on SrTiO3 and KTaO3 substrates.

Interplay between quantum confinement and surface effects in thickness selective stability of thin Ag and Eu films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Xiaojie; Wang, Cai -Zhuang

Using first-principles calculations, we show that both face-centered cubic (fcc) Ag (1 1 0) ultrathin films and body-centered cubic (bcc) Eu(1 1 0) ultrathin films exhibit thickness selective stability. Furthermore, the origin of such thickness selection is different. While the thickness selective stability in fcc Ag(1 1 0) films is mainly due to the well-known quantum well states ascribed to the quantum confinement effects in free-electron-like metal films, the thickness selection in bcc Eu(1 1 0) films is more complex and also strongly correlated with the occupation of the surface and surface resonance states.

Interplay between quantum confinement and surface effects in thickness selective stability of thin Ag and Eu films

DOE PAGES

Liu, Xiaojie; Wang, Cai -Zhuang

2017-04-03

Using first-principles calculations, we show that both face-centered cubic (fcc) Ag (1 1 0) ultrathin films and body-centered cubic (bcc) Eu(1 1 0) ultrathin films exhibit thickness selective stability. Furthermore, the origin of such thickness selection is different. While the thickness selective stability in fcc Ag(1 1 0) films is mainly due to the well-known quantum well states ascribed to the quantum confinement effects in free-electron-like metal films, the thickness selection in bcc Eu(1 1 0) films is more complex and also strongly correlated with the occupation of the surface and surface resonance states.

Laser interferometry for the determination of thickness distributions of low absorbing films and their spatial and thickness resolutions.

PubMed

Mishima, T; Kao, K C

1982-03-15

New laser interferometry has been developed, based on the principle that a 2-D fringe pattern can be produced by interference of spatially coherent light beams. To avoid the effect of reflection from the back surface of the substrate, the Brewster angle of incidence is adopted; to suppress the effect of diffraction, a lens or a lens system is used. This laser interferometry is an efficient nondestructive technique for the determination of thickness distributions or uniformities of low absorbing films on transparent substrates over a large area without involving laborious computations. The limitation of spatial resolution, thickness resolution, and visibility of fringes is fully analyzed.

Chemical reaction of atomic oxygen with evaporated films of copper, part 4

NASA Technical Reports Server (NTRS)

Fromhold, A. T.; Williams, J. R.

1990-01-01

Evaporated copper films were exposed to an atomic oxygen flux of 1.4 x 10(exp 17) atoms/sq cm per sec at temperatures in the range 285 to 375 F (140 to 191 C) for time intervals between 2 and 50 minutes. Rutherford backscattering spectroscopy (RBS) was used to determine the thickness of the oxide layers formed and the ratio of the number of copper to oxygen atoms in the layers. Oxide film thicknesses ranged from 50 to 3000 A (0.005 to 0.3 microns, or equivalently, 5 x 10(exp -9) to 3 x 10(exp -7); it was determined that the primary oxide phase was Cu2O. The growth law was found to be parabolic (L(t) varies as t(exp 1/2)), in which the oxide thickness L(t) increases as the square root of the exposure time t. The analysis of the data is consistent with either of the two parabolic growth laws. (The thin-film parabolic growth law is based on the assumption that the process is diffusion controlled, with the space charge within the growing oxide layer being negligible. The thick-film parabolic growth law is also based on a diffusion controlled process, but space-charge neutrality prevails locally within very thick oxides.) In the absence of a voltage measurement across the growing oxide, a distinction between the two mechanisms cannot be made, nor can growth by the diffusion of neutral atomic oxygen be entirely ruled out. The activation energy for the reaction is on the order of 1.1 eV (1.76 x 10(exp -19) joule, or equivalently, 25.3 kcal/mole).

Study on fabrication technology of silicon-based silica array waveguide grating

NASA Astrophysics Data System (ADS)

Sun, Yanjun; Dong, Lianhe; Leng, Yanbing

2009-05-01

Array waveguide grating (AWG) is an important plane optical element in dense wavelength division multiplex/demultiplex system. There are many virtue, channel quantity larger,lower loss, lower crosstalk, size smaller and high reliability etc. This article describs AWG fabrication technics utilizing IC(Integrated Circles) techniques, based on sixteen channel Silicon-Based Silica Array Waveguide Grating, put emphasis on discussing doping and deposition of waveguide core film,technics theory and interrelated parameter condition of photoetch and ion etching. Experiment result indicates that it depens on electrode structure, energy of radio-frequency electrode gas component, pressure ,flowing speed and substrate temperature by CVD depositing film .During depositing waveguide film by PE-CVD, the silicon is not reacted, When temperature becomes lower,it is reacted and it is easy to realize the control of film thickness and time with a result of film thickness uniformity reaching about 4% after optimizing deposition parameter and condition. We get the result of high etching speed rate, outline zoom, and side frame smooth by photoresist/Cr multiple mask and optimizing etching technics.

Influence of colorant and film thickness on thermal aging characteristics of oxo-biodegradable plastic bags

NASA Astrophysics Data System (ADS)

Leuterio, Giselle Lou D.; Pajarito, Bryan B.; Domingo, Carla Marie C.; Lim, Anna Patricia G.

2016-05-01

Functional, lightweight, strong and cheap plastic bags incorporated with pro-oxidants undergo accelerated degradation under exposure to heat and oxygen. This work investigated the effect of colorant and film thickness on thermal aging characteristics of commercial oxo-biodegradable plastic bag films at 70 °C. Degradation is monitored through changes in infrared absorption, weight, and tensile properties of thermally aged films. The presence of carbonyl band in infrared spectrum after 672 h of thermal aging supports the degradation behavior of exposed films. Results show that incorporation of colorant and increasing thickness exhibit low maximum weight uptake. Titanium dioxide as white colorant in films lowers the susceptibility of films to oxygen uptake but enhances physical degradation. Higher amount of pro-oxidant loading also contributes to faster degradation. Opaque films are characterized by low tensile strength and high elastic modulus. Decreasing the thickness contributes to lower tensile strength of films. Thermally aged films with colorant and low thickness promote enhanced degradation.

Nanomechanical investigation of thin-film electroceramic/metal-organic framework multilayers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Best, James P., E-mail: james.best@empa.ch, E-mail: engelbert.redel@kit.edu, E-mail: christof.woell@kit.edu; Michler, Johann; Maeder, Xavier

2015-09-07

Thin-film multilayer stacks of mechanically hard magnetron sputtered indium tin oxide (ITO) and mechanically soft highly porous surface anchored metal-organic framework (SURMOF) HKUST-1 were studied using nanoindentation. Crystalline, continuous, and monolithic surface anchored MOF thin films were fabricated using a liquid-phase epitaxial growth method. Control over respective fabrication processes allowed for tuning of the thickness of the thin film systems with a high degree of precision. It was found that the mechanical indentation of such thin films is significantly affected by the substrate properties; however, elastic parameters were able to be decoupled for constituent thin-film materials (E{sub ITO} ≈ 96.7 GPa, E{sub HKUST−1} ≈ 22.0 GPa).more » For indentation of multilayer stacks, it was found that as the layer thicknesses were increased, while holding the relative thickness of ITO and HKUST-1 constant, the resistance to deformation was significantly altered. Such an observation is likely due to small, albeit significant, changes in film texture, interfacial roughness, size effects, and controlling deformation mechanism as a result of increasing material deposition during processing. Such effects may have consequences regarding the rational mechanical design and utilization of MOF-based hybrid thin-film devices.« less

Mesoporous TiO2 Bragg Stack Templated by Graft Copolymer for Dye-sensitized Solar Cells

PubMed Central

Park, Jung Tae; Chi, Won Seok; Kim, Sang Jin; Lee, Daeyeon; Kim, Jong Hak

2014-01-01

Organized mesoporous TiO2 Bragg stacks (om-TiO2 BS) consisting of alternating high and low refractive index organized mesoporous TiO2 (om-TiO2) films were prepared to enhance dye loading, light harvesting, electron transport, and electrolyte pore-infiltration in dye-sensitized solar cells (DSSCs). The om-TiO2 films were synthesized via a sol-gel reaction using amphiphilic graft copolymers consisting of poly(vinyl chloride) backbones and poly(oxyethylene methacrylate) side chains, i.e., PVC-g-POEM as templates. To generate high and low index films, the refractive index of om-TiO2 film was tuned by controlling the grafting ratio of PVC-g-POEM via atomic transfer radical polymerization (ATRP). A polymerized ionic liquid (PIL)-based DSSC fabricated with a 1.2-μm-thick om-TiO2 BS-based photoanode exhibited an efficiency of 4.3%, which is much higher than that of conventional DSSCs with a nanocrystalline TiO2 layer (nc-TiO2 layer) (1.7%). A PIL-based DSSC with a heterostructured photoanode consisting of 400-nm-thick organized mesoporous TiO2 interfacial (om-TiO2 IF) layer, 7-μm-thick nc-TiO2, and 1.2-μm-thick om-TiO2 BS as the bottom, middle and top layers, respectively, exhibited an excellent efficiency of 7.5%, which is much higher than that of nanocrystaline TiO2 photoanode (3.5%). PMID:24980936

Characterization of Kerfless Linear Arrays Based on PZT Thick Film.

PubMed

Zawada, Tomasz; Bierregaard, Louise Moller; Ringgaard, Erling; Xu, Ruichao; Guizzetti, Michele; Levassort, Franck; Certon, Dominique

2017-09-01

Multielement transducers enabling novel cost-effective fabrication of imaging arrays for medical applications have been presented earlier. Due to the favorable low lateral coupling of the screen-printed PZT, the elements can be defined by the top electrode pattern only, leading to a kerfless design with low crosstalk between the elements. The thick-film-based linear arrays have proved to be compatible with a commercial ultrasonic scanner and to support linear array beamforming as well as phased array beamforming. The main objective of the presented work is to investigate the performance of the devices at the transducer level by extensive measurements of the test structures. The arrays have been characterized by several different measurement techniques. First, electrical impedance measurements on several elements in air and liquid have been conducted in order to support material parameter identification using the Krimholtz-Leedom-Matthaei model. It has been found that electromechanical coupling is at the level of 35%. The arrays have also been characterized by a pulse-echo system. The measured sensitivity is around -60 dB, and the fractional bandwidth is close to 60%, while the center frequency is about 12 MHz over the whole array. Finally, laser interferometry measurements have been conducted indicating very good displacement level as well as pressure. The in-depth characterization of the array structure has given insight into the performance parameters for the array based on PZT thick film, and the obtained information will be used to optimize the key parameters for the next generation of cost-effective arrays based on piezoelectric thick film.

Preparation and characterization of thick-film Ni/MH battery.

PubMed

Do, Jing-Shan; Yu, Sen-Hao; Cheng, Suh-Fen

2004-07-30

Using the porous polypropylene (PP) films sputtered with gold and the Ni as current collectors, the electroactive materials (Ni(OH)2 and metal hydride (MH)) of positive and negative electrodes were prepared on the current collector using thick-film technology. Two types of cell configurations were prepared and the characteristics of these batteries were compared. The cycle number for the formation of batteries based on the porous PP film was found to be 2, which was significantly less than that of batteries based on the ceramic substrates. Using the porous PP film as substrate, the number of cycles for the formation of battery increased from 2 to 5 with the increase of the charge/discharge rate from 0.1C/0.025C to 2.0C/0.5C. The silver oxides dendrites formed by the oxidation of silver paste used to adhere the current collectors and the conducting wires in the charge/discharge process caused a short contact between the positive and negative electrodes, which then caused the battery failure. The cycle life of the battery based on the porous PP film was found to be greater than 400 when the charge/discharge rate was 2.0C/0.5C.

Preparation of Nd-Fe-B/α-Fe nano-composite thick-film magnets on various substrates using PLD with high laser energy density above 10 J/cm2

NASA Astrophysics Data System (ADS)

Nakano, M.; Kondo, H.; Yamashita, A.; Yanai, T.; Itakura, M.; Fukunaga, H.

2018-05-01

PLD (Pulsed Laser Deposition) method with high laser energy density (LED) above 10 J/cm2 followed by a flash annealing enabled us to obtain isotropic nano-composite thick-film magnets with (BH)max ≧ 80 kJ/m3 on polycrystalline Ta substrates. We also have demonstrated that a dispersed structure composed of α-Fe together with Nd2Fe14B phases with the average grain diameter of approximately 20 nm could be formed on the Ta substrates. In this study, we tried to enhance the (BH)max value by controlling the microstructure due to the usage of different metal based substrates with each high melting point such as Ti, Nb, and W. Although it was difficult to vary the microstructure and to improve the magnetic properties of the films deposited on the substrates, we confirmed that isotropic thick-film magnets with (BH)max ≧ 80 kJ/m3 based on the nano-dispersed α-Fe and Nd2Fe14B phases could be obtained on various metal substrates with totally different polycrystalline structure. On the other hand, the use of a glass substrate lead to the deterioration of magnetic properties of a film prepared using the same preparation process.

Anodic Oxidation in Aluminum Electrode by Using Hydrated Amorphous Aluminum Oxide Film as Solid Electrolyte under High Electric Field.

PubMed

Yao, Manwen; Chen, Jianwen; Su, Zhen; Peng, Yong; Zou, Pei; Yao, Xi

2016-05-04

Dense and nonporous amorphous aluminum oxide (AmAO) film was deposited onto platinized silicon substrate by sol-gel and spin coating technology. The evaporated aluminum film was deposited onto the AmAO film as top electrode. The hydrated AmAO film was utilized as a solid electrolyte for anodic oxidation of the aluminum electrode (Al) film under high electric field. The hydrated AmAO film was a high efficiency electrolyte, where a 45 nm thick Al film was anodized completely on a 210 nm thick hydrated AmAO film. The current-voltage (I-V) characteristics and breakdown phenomena of a dry and hydrated 210 nm thick AmAO film with a 150 nm thick Al electrode pad were studied in this work. Breakdown voltage of the dry and hydrated 210 nm thick AmAO film were 85 ± 3 V (405 ± 14 MV m(-1)) and 160 ± 5 V (762 ± 24 MV m(-1)), respectively. The breakdown voltage of the hydrated AmAO film increased about twice, owing to the self-healing behavior (anodic oxidation reaction). As an intuitive phenomenon of the self-healing behavior, priority anodic oxidation phenomena was observed in a 210 nm thick hydrated AmAO film with a 65 nm thick Al electrode pad. The results suggested that self-healing behavior (anodic oxidation reaction) was occurring nearby the defect regions of the films during I-V test. It was an effective electrical self-healing method, which would be able to extend to many other simple and complex oxide dielectrics and various composite structures.

The Coupled Photothermal Reaction and Transport in a Laser Additive Metal Nanolayer Simultaneous Synthesis and Pattering for Flexible Electronics.

PubMed

Tsai, Song-Ling; Liu, Yi-Kai; Pan, Heng; Liu, Chien-Hung; Lee, Ming-Tsang

2016-01-08

The Laser Direct Synthesis and Patterning (LDSP) technology has advantages in terms of processing time and cost compared to nanomaterials-based laser additive microfabrication processes. In LDSP, a scanning laser on the substrate surface induces chemical reactions in the reactive liquid solution and selectively deposits target material in a preselected pattern on the substrate. In this study, we experimentally investigated the effect of the processing parameters and type and concentration of the additive solvent on the properties and growth rate of the resulting metal film fabricated by this LDSP technology. It was shown that reactive metal ion solutions with substantial viscosity yield metal films with superior physical properties. A numerical analysis was also carried out the first time to investigate the coupled opto-thermo-fluidic transport phenomena and the effects on the metal film growth rate. To complete the simulation, the optical properties of the LDSP deposited metal film with a variety of thicknesses were measured. The characteristics of the temperature field and the thermally induced flow associated with the moving heat source are discussed. It was shown that the processing temperature range of the LDSP is from 330 to 390 K. A semi-empirical model for estimating the metal film growth rate using this process was developed based on these results. From the experimental and numerical results, it is seen that, owing to the increased reflectivity of the silver film as its thickness increases, the growth rate decreases gradually from about 40 nm at initial to 10 nm per laser scan after ten scans. This self-controlling effect of LDSP process controls the thickness and improves the uniformity of the fabricated metal film. The growth rate and resulting thickness of the metal film can also be regulated by adjustment of the processing parameters, and thus can be utilized for controllable additive nano/microfabrication.

Electrically Conductive Photopatternable Silver Paste for High-Frequency Ring Resonator and Band-Pass Filter

NASA Astrophysics Data System (ADS)

Umarji, Govind; Qureshi, Nilam; Gosavi, Suresh; Mulik, Uttam; Kulkarni, Atul; Kim, Taesung; Amalnerkar, Dinesh

2017-02-01

In conventional thick-film technology, there are often problems associated with poor edges, rough surfaces, and reproducibility due to process limitations, especially for high-frequency applications. These difficulties can be circumvented by using thin-film technology, but process cost and complexity remain major concerns. In this context, photopatternable thick-film technology can offer a viable alternative due to its Newtonian rheology, which can facilitate formation of the required sharp edges. We present herein a unique attempt to formulate a photopatternable silver paste with organic (photosensitive polymer) to inorganic (silver and glass) ratio of 30:70, developed in-house by us for fabrication of thick-film-based ring resonator and band-pass filter components. The ring resonator and band-pass component structures were realized by exposing screen-printed film to ultraviolet light at wavelength of 315 nm to 400 nm for 30 s to crosslink the photosensitive polymer. The pattern was subsequently developed using 1% sodium carbonate aqueous solution. For comparison, conventional silver and silver-palladium thick films were produced using in-house formulations. The surface topology and microstructural features were examined by stereomicroscopy and scanning electron microscopy. The smoothness and edge definition of the film were assessed by profilometry. The resistivity of the samples was observed and remained in the range from 3.4 μΩ cm to 3.6 μΩ cm. The electrical properties were compared by measuring the insertion loss characteristics. The results revealed that the ring resonator fabricated using the photopatternable silver paste exhibited better high-frequency properties compared with components based on conventional silver or silver-palladium paste, especially in terms of the resonant frequency of 10.1 GHz (versus 10 GHz designed) with bandwidth of 80 MHz. Additionally, the band-pass filter fabricated using the photopatternable silver paste displayed better center frequency ( f 0 = 10.588 GHz) and comparable ripple and attenuation bandwidth performance on par with Cu thin film.

[The diagnosis of malaria by the thick film and the QBC: a comparative study of both technics].

PubMed

Cabezos, J; Bada, J L

1993-06-12

The diagnosis of paludism is important because of the severity of the clinical picture caused by Plasmodium falciparum, the increasing number of travellers to endemic zones and the emigration from these zones. A comparative study of the QBC techniques (staining with acridin orange and observation with ultraviolet light) and the thick film with Giemsa staining was carried out. The QBC and thick film were performed parallelly for 17 months in a total of 623 samples pertaining to subjects from endemic zones of paludism (emigrants, immigrants and travellers). Of the 623 samples studied 49 were positive for paludism by both techniques. Ten were positive with only the thick film and six were positive only with QBC. The sensitivity of QBC versus thick film was 83% and specificity 98.9%. The time used to determine diagnosis with the QBC technique ranged from 6 to 12 minutes from withdrawal of the sample, while with the thick film the time spent was more than 2 hours. The cases positive by thick film and negative with QBC corresponded to patients with very low parasitation. The intensity of parasitation was difficult to determine quantitatively by QBC. Although the QBC technique has the advantage of speed it is inexact with respect to the quantification of parasitemia. Moreover, it is less sensitive than the thick film in patient with very low parasitations and cannot thus substitute the thick film.

Pulsed photoinitiated fabrication of inkjet printed titanium dioxide/reduced graphene oxide nanocomposite thin films.

PubMed

Bourgeois, Briley; Luo, Sijun; Riggs, Brian; Ji, Yaping; Adireddy, Shiva; Schroder, Kurt; Farnsworth, Stan; Chrisey, Douglas; Escarra, Matthew

2018-08-03

This work reports a new technique for scalable and low-temperature processing of nanostructured TiO 2 thin films, allowing for practical manufacturing of TiO 2 -based devices such as perovskite solar cells at low-temperature or on flexible substrates. Dual layers of dense and mesoporous TiO 2 /graphitic oxide nanocomposite films are synthesized simultaneously using inkjet printing and pulsed photonic irradiation. Investigation of process parameters including precursor concentration (10-20 wt%) and exposure fluence (4.5-8.5 J cm -2 ) reveals control over crystalline quality, graphitic oxide phase, film thickness, dendrite density, and optical properties. Raman spectroscopy shows the E g peak, characteristic of anatase phase titania, increases in intensity with higher photonic irradiation fluence, suggesting increased crystallinity through higher fluence processing. Film thickness and dendrite density is shown to increase with precursor concentration in the printed ink. The dense base layer thickness was controlled between 20 and 80 nm. The refractive index of the films is determined by ellipsometry to be 1.92 ± 0.08 at 650 nm. Films exhibit an energy weighted optical transparency of 91.1%, in comparison to 91.3% of a thermally processed film, when in situ carbon materials were removed. Transmission and diffuse reflectance are used to determine optical band gaps of the films ranging from 2.98 to 3.38 eV in accordance with the photonic irradiation fluence and suggests tunability of TiO 2 phase composition. The sheet resistance of the synthesized films is measured to be 14.54 ± 1.11 Ω/□ and 28.90 ± 2.24 Ω/□ for films as-processed and after carbon removal, respectively, which is comparable to high temperature processed TiO 2 thin films. The studied electrical and optical properties of the light processed films show comparable results to traditionally processed TiO 2 while offering the distinct advantages of scalable manufacturing, low-temperature processing, simultaneous bilayer fabrication, and in situ formation of removable carbon nanocomposites.

Dimensional scaling of perovskite ferroelectric thin films

NASA Astrophysics Data System (ADS)

Keech, Ryan R.

Dimensional size reduction has been the cornerstone of the exponential improvement in silicon based logic devices for decades. However, fundamental limits in the device physics were reached ˜2003, halting further reductions in clock speed without significant penalties in power consumption. This has motivated the research into next generation transistors and switching devices to reinstate the scaling laws for clock speed. This dissertation aims to support the scaling of devices that are based on ferroelectricity and piezoelectricity and to provide a roadmap for the corresponding materials performance. First, a scalable growth process to obtain highly {001}-oriented lead magnesium niobate - lead titanate (PMN-PT) thin films was developed, motivated by the high piezoelectric responses observed in bulk single crystals. It was found that deposition of a 2-3 nm thick PbO buffer layer on {111} Pt thin film bottom electrodes, prior to chemical solution deposition of PMN-PT reduces the driving force for Pb diffusion from the PMN-PT to the bottom electrode, and facilitates nucleation of {001}-oriented perovskite grains. Energy dispersive spectroscopy demonstrated that up to 10% of the Pb from a PMN-PT precursor solution may diffuse into the bottom electrode. PMN-PT grains with a mixed {101}/{111} orientation in a matrix of Pb-deficient pyrochlore phase were then promoted near the interface. When this is prevented, phase pure films with {001} orientation with Lotgering factors of 0.98-1.0, can be achieved. The resulting films of only 300 nm in thickness exhibit longitudinal effective d33,f coefficients of ˜90 pm/V and strain values of ˜1% prior to breakdown. 300 nm thick epitaxial and polycrystalline lead magnesium niobate - lead titanate (70PMN-30PT) blanket thin films were studied for the relative contributions to property thickness dependence from interfacial and grain boundary low permittivity layers. Epitaxial PMN-PT films were grown on SrRuO 3 /(001)SrTiO3, while polycrystalline films with {001}-Lotgering factors >0.96 were grown on Pt/TiO2/SiO2/Si substrates via chemical solution deposition. It was found that both film types exhibited similar, thickness-independent high-field epsilonr of ˜300 with highly crystalline electrode/dielectric interfaces. The dielectric data suggest that irreversible domain wall motion is the major contributor to the overall dielectric response and its thickness dependence. In epitaxial films the irreversible Rayleigh coefficients reduced 85% upon decreasing thickness from 350 to 100 nm. Tmax was the only measured small signal quantity which was more thickness dependent in polycrystalline than epitaxial films. This was attributed to the relaxor nature present in the films, potentially stabilized by defect concentrations, and/or chemical inhomogeneity. The effective interfacial layers are found to contribute to the measured thickness dependence in d33,f measured by X-ray diffraction. Finally, high field piezoelectric characterization revealed a field-induced rhombohedral to tetragonal phase transition in epitaxial films. While the mechanisms causing thickness dependence are mostly understood, the functional properties of blanket PMN-PT films remain about an order of magnitude lower than what is achieved in constraint-free bulk single crystals. These property reductions are attributed to substrate clamping, and the process of declamping via lateral subdivision was studied in 300-350 nm thick, {001} oriented 70PMN-30PT films on Si substrates. In the clamped state, the films exhibit relative permittivity near 1500 and loss tangents of approximately 0.01. The films showed slim hysteresis loops with remanent polarizations of about 8 muC/cm2 and breakdown fields over 1500 kV/cm. Using optical and electron beam lithography combined with reactive ion etching, the PMN-PT films were systematically patterned down to lateral feature sizes of 200 nm in spatial scale with nearly vertical sidewalls. Upon lateral scaling, which produced partially declamped films, there was an increase in both small and large signal dielectric properties, including a doubling of the relative permittivity in structures with width-to-thickness aspect ratios of 0.7. In addition, declamping resulted in a counterclockwise rotation of the hysteresis loops, increasing the remanent polarization to 13.5 muC/cm2. Rayleigh analysis, Preisach modeling, and the relative permittivity as a function of temperature also indicated changes in the domain wall motion and intrinsic response of the laterally scaled PMN-PT. The longitudinal piezoelectric coefficient, d33,f, was interrogated as a function of position across the patterned structures by finite element modeling, piezoresponse force microscopy, and nanoprobe synchrotron X-ray diffraction. It was found that d33,f increased from the clamped value of 40-50 pm/V to ˜160 pm/V at the free sidewall under 200 kV/cm excitation. The sidewalls partially declamped the piezoelectric response 500-600 nm into the patterned structure, raising the piezoelectric response at the center of features with lateral dimensions less than 1 mum (3:1 width to thickness aspect ratio). The normalized data from all three characterization techniques are in excellent agreement, with quantitative differences providing insight to the field dependence of the piezoelectric coefficient and its declamping behavior.

Biosensors Based on Ultrathin Film Composite Membranes

DTIC Science & Technology

1994-01-25

composite membranes should have a number C •’ of potential advantages including fast response time, simplicity of construction, and applicability to a number...The support membrane for the ultrathin film composite was an Anopore ( Alltech Associates) microporous alumina filter, these membranes are 55 Pm thick...constant 02 concentration in this solution. Finally, one of the most important potential advantage of a sensor based on an ultrathin film composite

Graphene-based multilayer resonance structure to enhance the optical pressure on a Mie particle

NASA Astrophysics Data System (ADS)

Hassanzadeh, Abdollah; Mohammadnezhad, Mohammadbagher

2016-04-01

We theoretically investigate the optical force exerted on a Mie dielectric particle in the evanescent field of a graphene-based resonance multilayer structure using the arbitrary beam theory and the theory of multilayer films. The resonance structure consists of several thin films including a dielectric film (MgF2), a metal film (silver or gold), and several graphene layers which are located on a prism base. The effects of the metal film thickness and the number of graphene layers on the optical force are numerically investigated. The thickness of the metal layer and the number of graphene layers are optimized to reach the highest optical force. The numerical results show that an optimized composition of graphene and gold leads to a higher optical force compared to that of the graphene and silver. The optical force was enhanced resonantly by four orders of magnitude for the resonance structure containing graphene and a gold film and by three orders of magnitude for the structure containing graphene and a silver film compared to other similar resonance structures. We hope that the results presented in this paper can provide an excellent means of improving the optical manipulation of particles and enable the provision of effective optical tweezers, micromotors, and microaccelelators.

Reflectometry-Ellipsometry Reveals Thickness, Growth Rate, and Phase Composition in Oxidation of Copper.

PubMed

Diaz Leon, Juan J; Fryauf, David M; Cormia, Robert D; Zhang, Min-Xian Max; Samuels, Kathryn; Williams, R Stanley; Kobayashi, Nobuhiko P

2016-08-31

The oxidation of copper is a complicated process. Copper oxide develops two stable phases at room temperature and standard pressure (RTSP): cuprous oxide (Cu2O) and cupric oxide (CuO). Both phases have different optical and electrical characteristics that make them interesting for applications such as solar cells or resistive switching devices. For a given application, it is necessary to selectively control oxide thickness and cupric/cuprous oxide phase volume fraction. The thickness and composition of a copper oxide film growing on the surface of copper widely depend on the characteristics of as-deposited copper. In this Research Article, two samples, copper films prepared by two different deposition techniques, electron-beam evaporation and sputtering, were studied. As the core part of the study, the formation of the oxidized copper was analyzed routinely over a period of 253 days using spectroscopic polarized reflectometry-spectroscopic ellipsometry (RE). An effective medium approximation (EMA) model was used to fit the RE data. The RE measurements were complemented and validated by using X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM) and X-ray diffraction (XRD). Our results show that the two samples oxidized under identical laboratory ambient conditions (RTSP, 87% average relative humidity) developed unique oxide films following an inverse-logarithmic growth rate with thickness and composition different from each other over time. Discussion is focused on the ability of RE to simultaneously extract thickness (i.e., growth rate) and composition of copper oxide films and on plausible physical mechanisms responsible for unique oxidation habits observed in the two copper samples. It appears that extended surface characteristics (i.e., surface roughness and grain boundaries) and preferential crystalline orientation of as-deposited polycrystalline copper films control the growth kinetics of the copper oxide film. Analysis based on a noncontact and nondestructive measurement, such as RE, to extract key material parameters is beneficial for conveniently understanding the oxidation process that would ultimately enable copper oxide-based devices at manufacturing scales.

An on-line monitoring system for oil-film, pressure and temperature distributions in large-scale hydro-generator bearings

NASA Astrophysics Data System (ADS)

Höbel, M.; Haffner, K.

1999-05-01

Instrumentation that allows the behaviour of a hydro-generator thrust bearing to be monitored during operation is described. The measurement system was developed at the Asea Brown Boveri corporate research centre in Switzerland and was tested under realistic operating conditions at the Harbin Electric Machinery Company bearing-testing facility in the People's Republic of China. Newly developed fibre-optical proximity probes were used for the on-line monitoring of the thin oil film between the static and rotating parts of the bearing. These sensors are based on a back-reflection technique and can be used for various target materials such as Babbitt and Teflon. The monitoring system comprises about 120 temperature sensors, four pressure sensors and five optical oil-film thickness sensors. Temperature sensors are installed at specific static locations, whereas pressure and oil-film sensors are positioned in the runner and generate data during rotation. A special feature of the monitoring equipment is its on-line processing capability. Digital signal processors operating in parallel handle pressure and oil-film thickness data. Important measurement parameters such as the maximum pressure, maximum temperature and minimum oil-film thickness are displayed on-line. Detailed three-dimensional temperature information on one of the load segments can be obtained from subsequent off-line data analysis. The system also calculates two-dimensional plots of the oil-film thickness and pressure for most of the 12 load segments.

Biodegradable multilayer barrier films based on alginate/polyethyleneimine and biaxially oriented poly(lactic acid).

PubMed

Gu, Chun-Hong; Wang, Jia-Jun; Yu, Yang; Sun, Hui; Shuai, Ning; Wei, Bing

2013-02-15

A layer-by-layer (LBL) approach was used to assemble alternating layers of sodium alginate (ALG)/polyethyleneimine (PEI) on biaxially oriented poly(lactic acid) (BOPLA) films in order to produce bio-based all-polymer thin films with low gas permeability. Increasing the depositing of ALG and PEI from 0 to 30 layers results in large thickness variations (from 0 to 3.92 μm). After 30 ALG/PEI layers are deposited, the resulting assembly has an OTR of 1.22 cm(3)/(m(2) day atm). When multiplied by thickness, the resulting oxygen permeability (OP) is found to be less than 3.8×10(-17) cm(3) cm/cm(2) s Pa, which is almost 3 orders of magnitude lower than that of uncoated BOPLA film (1.8×10(-14) cm(3)cm/cm(2) s Pa). At the same time, the resulting multilayer-coated BOPLA films maintain high optical clarity and tensile properties. This unique barrier thin film has become a promising alternative to non-biodegradable synthetic food packaging materials. Copyright © 2012 Elsevier Ltd. All rights reserved.

Epitaxy of Ferroelectric P(VDF-TrFE) Films via Removable PTFE Templates and Its Application in Semiconducting/Ferroelectric Blend Resistive Memory.

PubMed

Xia, Wei; Peter, Christian; Weng, Junhui; Zhang, Jian; Kliem, Herbert; Jiang, Yulong; Zhu, Guodong

2017-04-05

Ferroelectric polymer based devices exhibit great potentials in low-cost and flexible electronics. To meet the requirements of both low voltage operation and low energy consumption, thickness of ferroelectric polymer films is usually required to be less than, for example, 100 nm. However, decrease of film thickness is also accompanied by the degradation of both crystallinity and ferroelectricity and also the increase of current leakage, which surely degrades device performance. Here we report one epitaxy method based on removable poly(tetrafluoroethylene) (PTFE) templates for high-quality fabrication of ordered ferroelectric polymer thin films. Experimental results indicate that such epitaxially grown ferroelectric polymer films exhibit well improved crystallinity, reduced current leakage and good resistance to electrical breakdown, implying their applications in high-performance and low voltage operated ferroelectric devices. On the basis of this removable PTFE template method, we fabricated organic semiconducting/ferroelectric blend resistive films which presented record electrical performance with operation voltage as low as 5 V and ON/OFF ratio up to 10 5 .

Film Thickness Allowance and Waveguide Length in 3-Layer Unidirectional Magneto-Optical TE-TM Mode Converter

NASA Astrophysics Data System (ADS)

Abe, Masanori; Nakagawa, Hidenobu; Gomi, Manabu; Nomura, Shoichiro

1982-01-01

The film thickness allowance and the waveguide length in a 3-layer (substrate/film/air) magneto-optical unidirectional TE-TM mode converter which utilizes the intrinsic birefringence in an anisotropic material are calculated at λ0{=}1.55 μm. The film material should be gyrotropic in order to make the waveguide length short, and the film thickness allowance is relaxed by reducing the ratio of the dielectric constant of the film to that of the substrate. When the waveguide is made of an isotropic gyrotropic film of YIG deposited on an anisotropic substrate (which may be gyrotropic or not), the restriction on the film thickness can in practice be removed, but this requires precise control of the dielectric constant of the film and the substrate instead.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Haidar, M., E-mail: mohammad.haidar@Physics.gu.se; Ranjbar, M.; Balinsky, M.

The magnetodynamical properties of nanometer-thick yttrium iron garnet films are studied using ferromagnetic resonance as a function of temperature. The films were grown on gadolinium gallium garnet substrates by pulsed laser deposition. First, we found that the damping coefficient increases as the temperature increases for different film thicknesses. Second, we found two different dependencies of the damping on film thickness: at room temperature, the damping coefficient increases as the film thickness decreases, while at T = 8 K, we find the damping to depend only weakly on the thickness. We attribute this behavior to an enhancement of the relaxation of the magnetization bymore » impurities or defects at the surfaces.« less

Microscopic image processing systems for measuring nonuniform film thickness profiles

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, A.H.; Plawsky, J.L.; DasGupta, S.

1994-01-01

In very thin liquid films. transport processes are controlled by the temperature and the interfacial intermolecular force field which is a function of the film thickness profile and interfacial properties. The film thickness profile and interfacial properties can be measured most efficiently using a microscopic image processing system. IPS, to record the intensity pattern of the reflected light from the film. There are two types of IPS: an image analyzing interferometer (IAI) and/or an image scanning ellipsometer (ISE). The ISE is a novel technique to measure the two dimensional thickness profile of a nonuniform, thin film, from 1 nm upmore » to several {mu}m, in a steady state as well as in a transient state. It is a full field imaging technique which can study every point on the surface simultaneously with high spatial resolution and thickness sensitivity, i.e., it can measure and map the 2-D film thickness profile. Using the ISE, the transient thickness profile of a draining thin liquid film was measured and modeled. The interfacial conditions were determined in situ by measuring the Hamaker constant. The ISE and IAI systems are compared.« less

Thickness-dependent electrocaloric effect in mixed-phase Pb0.87Ba0.1 La0.02(Zr0.6Sn0.33Ti0.07)O3 thin films

PubMed Central

Correia, T. M.

2016-01-01

Full-perovskite Pb0.87Ba0.1La0.02(Zr0.6Sn0.33Ti0.07)O3 (PBLZST) thin films were fabricated by a sol–gel method. These revealed both rhombohedral and tetragonal phases, as opposed to the full-tetragonal phase previously reported in ceramics. The fractions of tetragonal and rhombohedral phases are found to be strongly dependent on film thickness. The fraction of tetragonal grains increases with increasing film thickness, as the substrate constraint throughout the film decreases with film thickness. The maximum of the dielectric constant (εm) and the corresponding temperature (Tm) are thickness-dependent and dictated by the fraction of rhombohedral and tetragonal phase, with εm reaching a minimum at 400 nm and Tm shifting to higher temperature with increasing thickness. With the thickness increase, the breakdown field decreases, but field-induced antiferroelectric–ferroelectric (EAFE−FE) and ferroelectric–antiferroelectric (EFE−AFE) switch fields increase. The electrocaloric effect increases with increasing film thickness. This article is part of the themed issue ‘Taking the temperature of phase transitions in cool materials’. PMID:27402937

Why we need to look beyond the glass transition temperature to characterize the dynamics of thin supported polymer films.

PubMed

Zhang, Wengang; Douglas, Jack F; Starr, Francis W

2018-05-29

There is significant variation in the reported magnitude and even the sign of [Formula: see text] shifts in thin polymer films with nominally the same chemistry, film thickness, and supporting substrate. The implicit assumption is that methods used to estimate [Formula: see text] in bulk materials are relevant for inferring dynamic changes in thin films. To test the validity of this assumption, we perform molecular simulations of a coarse-grained polymer melt supported on an attractive substrate. As observed in many experiments, we find that [Formula: see text] based on thermodynamic criteria (temperature dependence of film height or enthalpy) decreases with decreasing film thickness, regardless of the polymer-substrate interaction strength ε. In contrast, we find that [Formula: see text] based on a dynamic criterion (relaxation of the dynamic structure factor) also decreases with decreasing thickness when ε is relatively weak, but [Formula: see text] increases when ε exceeds the polymer-polymer interaction strength. We show that these qualitatively different trends in [Formula: see text] reflect differing sensitivities to the mobility gradient across the film. Apparently, the slowly relaxing polymer segments in the substrate region make the largest contribution to the shift of [Formula: see text] in the dynamic measurement, but this part of the film contributes less to the thermodynamic estimate of [Formula: see text] Our results emphasize the limitations of using [Formula: see text] to infer changes in the dynamics of polymer thin films. However, we show that the thermodynamic and dynamic estimates of [Formula: see text] can be combined to predict local changes in [Formula: see text] near the substrate, providing a simple method to infer information about the mobility gradient.

Thickness determination of large-area films of yttria-stabilized zirconia produced by pulsed laser deposition

NASA Astrophysics Data System (ADS)

Pryds, N.; Toftmann, B.; Bilde-Sørensen, J. B.; Schou, J.; Linderoth, S.

2006-04-01

Films of yttria-stabilized zirconia (YSZ) on a polished silicon substrate of diameter up to 125 mm have been produced in a large-area pulsed laser deposition (PLD) setup under typical PLD conditions. The film thickness over the full film area has been determined by energy-dispersive X-ray spectrometry in a scanning electron microscope (SEM) with use of a method similar to one described by Bishop and Poole. The attenuation of the electron-induced X-rays from the Si wafer by the film was monitored at a number of points along a diameter and the thickness was determined by Monte Carlo simulations of the attenuation for various values of film thickness with the program CASINO. These results have been compared with direct measurements in the SEM of the film thickness on a cross-section on one of the wafers. The results of these measurements demonstrate the ability of this technique to accurately determine the thickness of a large film, i.e. up to diameters of 125 mm, in a relatively short time, without destroying the substrate, without the need of a standard sample and without the need of a flat substrate. We have also demonstrated that by controlling the deposition parameters large-area YSZ films with uniform thickness can be produced.

Effect of film thickness on structural and mechanical properties of AlCrN nanocompoite thin films deposited by reactive DC magnetron sputtering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Prakash, Ravi; Kaur, Davinder, E-mail: dkaurfph@iitr.ac.in

2016-05-06

In this study, the influence of film thickness on the structural, surface morphology and mechanical properties of Aluminum chromium nitride (AlCrN) thin films has been successfully investigated. The AlCrN thin films were deposited on silicon (100) substrate using dc magnetron reactive co-sputtering at substrate temperature 400° C. The structural, surface morphology and mechanical properties were studied using X-ray diffraction, field-emission scanning electron microscopy and nanoindentation techniques respectively. The thickness of these thin films was controlled by varying the deposition time therefore increase in deposition time led to increase in film thickness. X-ray diffraction pattern of AlCrN thin films with differentmore » deposition time shows the presence of (100) and (200) orientations. The crystallite size varies in the range from 12.5 nm to 36.3 nm with the film thickness due to surface energy minimization with the higher film thickness. The hardness pattern of these AlCrN thin films follows Hall-Petch relation. The highest hardness 23.08 Gpa and young modulus 215.31 Gpa were achieved at lowest grain size of 12.5 nm.« less

Substrate spacing and thin-film yield in chemical bath deposition of semiconductor thin films

NASA Astrophysics Data System (ADS)

Arias-Carbajal Reádigos, A.; García, V. M.; Gomezdaza, O.; Campos, J.; Nair, M. T. S.; Nair, P. K.

2000-11-01

Thin-film yield in the chemical bath deposition technique is studied as a function of separation between substrates in batch production. Based on a mathematical model, it is proposed and experimentally verified in the case of CdS thin films that the film thickness reaches an asymptotic maximum with increase in substrate separation. It is shown that at a separation less than 1 mm between substrates the yield, i.e. percentage in moles of a soluble cadmium salt deposited as a thin film of CdS, can exceed 50%. This behaviour is explained on the basis of the existence of a critical layer of solution near the substrate, within which the relevant ionic species have a higher probability of interacting with the thin-film layer than of contributing to precipitate formation. The critical layer depends on the solution composition and the temperature of the bath as well as the duration of deposition. An effective value for the critical layer thickness has been defined as half the substrate separation at which 90% of the maximum film thickness for the particular bath composition, bath temperature and duration of deposition is obtained. In the case of CdS thin films studied as an example, the critical layer is found to extend from 0.5 to 2.5 mm from the substrate surface, depending on the deposition conditions.

The thickness effect of pre-deposited catalyst film on carbon nanotube growth by chemical vapor deposition

NASA Astrophysics Data System (ADS)

Wei, Y. Y.; Eres, Gyula; Lowndes, Douglas H.

2001-03-01

Chemical vapor deposition (CVD) of multi wall carbon nanotubes (MWCNTs) was realized on a substrate with a layer of iron film used as a catalyst. The catalyst film was pre-deposited in an electron-gun evaporator equipped with a movable shutter which partially blocks the beam during the evaporation process to produce a catalyst film with a continuously changing thickness from 0 to 60 nm. This technique creates a growth environment in which the film thickness is the only variable and eliminates sample-to-sample variations, enabling a systematic study of the thickness effect of the catalyst film on CNT growth. After the deposition of the catalyst film, the sample was immediately transferred into a CVD chamber where CNT growth was performed. Using Acetylene (C_2H_2) as a carbon-source gas, at the substrate temperature of around 700^oC, MWCNTs preferentially grow as a dense mat on the thin regions of the catalyst film. Moreover, beyond a certain critical film thickness no tubes were observed. The critical film thickness for CNT growth was found to increase with substrate temperature from 640^oC to 800^oC. There appears to be no strong correlation between the film thickness and the diameter of the tubes. At the substrate temperature of over 900^oC, the deposited carbon formed graphite sheets surrounding the catalyst particles and no CNTs were observed. A plot of the critical thickness of the catalyst film where CNTs start to grow as a function of the substrate temperature has obtained, which can be served as a reference for selecting the growth parameter in MWCNT growth. The significance of these experimental trends is discussed within the framework of the diffusion model for MWCNT growth.

Zero-order release of poorly water-soluble drug from polymeric films made via aqueous slurry casting.

PubMed

Zhang, Lu; Alfano, Joy; Race, Doran; Davé, Rajesh N

2018-05-30

In spite of significant recent interest in polymeric films containing poorly water-soluble drugs, dissolution mechanism of thicker films has not been investigated. Consequently, release mechanisms of poorly water-soluble drugs from thicker hydroxypropyl methylcellulose (HPMC) films are investigated, including assessing thickness above which they exhibit zero-order drug release. Micronized, surface modified particles of griseofulvin, a model drug of BSC class II, were incorporated into aqueous slurry-cast films of different thicknesses (100, 500, 1000, 1500 and 2000 μm). Films 1000 μm and thicker were formed by either stacking two or more layers of ~500 μm, or forming a monolithic thick film. Compared to monolithic thick films, stacked films required simpler manufacturing process (easier casting, short drying time) and resulted in better critical quality attributes (appearance, uniformity of thickness and drug per unit area). Both the film forming approaches exhibited similar release profiles and followed the semi-empirical power law. As thickness increased from 100 μm to 2000 μm, the release mechanism changed from Fickian diffusion to zero-order release for films ≥1000 μm. The diffusional power law exponent, n, achieved value of 1, confirming zero-order release, whereas the percentage drug release varied linearly with sample surface area, and sample thickness due to fixed sample diameter. Thus, multi-layer hydrophilic polymer aqueous slurry-cast thick films containing poorly water-soluble drug particles provide a convenient dosage form capable of zero-order drug release with release time modulated through number of layers. Copyright © 2018 Elsevier B.V. All rights reserved.

Strain-induced alignment and phase behavior of blue phase liquid crystals confined to thin films.

PubMed

Bukusoglu, Emre; Martinez-Gonzalez, Jose A; Wang, Xiaoguang; Zhou, Ye; de Pablo, Juan J; Abbott, Nicholas L

2017-12-06

We report on the influence of surface confinement on the phase behavior and strain-induced alignment of thin films of blue phase liquid crystals (BPs). Confining surfaces comprised of bare glass, dimethyloctadecyl [3-(trimethoxysilyl)propyl] ammonium chloride (DMOAP)-functionalized glass, or polyvinyl alcohol (PVA)-coated glass were used with or without mechanically rubbing to influence the azimuthal anchoring of the BPs. These experiments reveal that confinement can change the phase behavior of the BP films. For example, in experiments performed with rubbed-PVA surfaces, we measured the elastic strain of the BPs to change the isotropic-BPII phase boundary, suppressing formation of BPII for film thicknesses incommensurate with the BPII lattice. In addition, we observed strain-induced alignment of the BPs to exhibit a complex dependence on both the surface chemistry and azimuthal alignment of the BPs. For example, when using bare glass surfaces causing azimuthally degenerate and planar anchoring, BPI oriented with (110) planes of the unit cell parallel to the contacting surfaces for thicknesses below 3 μm but transitioned to an orientation with (200) planes aligned parallel to the contacting surfaces for thicknesses above 4 μm. In contrast, BPI aligned with (110) planes parallel to confining surfaces for all other thicknesses and surface treatments, including bare glass with uniform azimuthal alignment. Complementary simulations based on minimization of the total free energy (Landau-de Gennes formalism) confirmed a thickness-dependent reorientation due to strain of BPI unit cells within a window of surface anchoring energies and in the absence of uniform azimuthal alignment. In contrast to BPI, BPII did not exhibit thickness-dependent orientations but did exhibit orientations that were dependent on the surface chemistry, a result that was also captured in simulations by varying the anchoring energies. Overall, the results in this paper reveal that the orientations assumed by BPs in thin films reflect a complex interplay of surface interactions and elastic energies associated with strain of the BP lattice. The results also provide new principles and methods to control the structure and properties of BP thin films, which may find use in BP-templated material synthesis, and BP-based optical and electronic devices.

Effects of CH3OH Addition on Plasma Electrolytic Oxidation of AZ31 Magnesium Alloys

NASA Astrophysics Data System (ADS)

He, Yongyi; Chen, Li; Yan, Zongcheng; Zhang, Yalei

2015-09-01

Plasma electrolytic oxidation (PEO) films on AZ31 magnesium alloys were prepared in alkaline silicate electrolytes (base electrolyte) with the addition of different volume concentrations of CH3OH, which was used to adjust the thickness of the vapor sheath. The compositions, morphologies, and thicknesses of ceramic layers formed with different CH3OH concentrations were determined via X-ray diffraction (XRD), energy-dispersive spectroscopy (EDS), and scanning electron microscopy (SEM). Corrosion behavior of the oxide films was evaluated in 3.5 wt.% NaCl solution using potentiodynamic polarization tests. PEO coatings mainly comprised Mg, MgO, and Mg2SiO4. The addition of CH3OH in base electrolytes affected the thickness, pores diameter, and Mg2SiO4 content in the films. The films formed in the electrolyte containing 12% CH3OH exhibited the highest thickness. The coatings formed in the electrolyte containing different concentrations of CH3OH exhibited similar corrosion resistance. The energy consumption of PEO markedly decreased upon the addition of CH3OH to the electrolytes. The result is helpful for energy saving in the PEO process. supported by National Natural Science Foundation of China (No. 21376088), the Project of Production, Education and Research, Guangdong Province and Ministry of Education (Nos. 2012B09100063, 2012A090300015), and Guangzhou Science and Technology Plan Projects of China (No. 2014Y2-00042)

Towards a uniform and large-scale deposition of MoS2 nanosheets via sulfurization of ultra-thin Mo-based solid films.

PubMed

Vangelista, Silvia; Cinquanta, Eugenio; Martella, Christian; Alia, Mario; Longo, Massimo; Lamperti, Alessio; Mantovan, Roberto; Basset, Francesco Basso; Pezzoli, Fabio; Molle, Alessandro

2016-04-29

Large-scale integration of MoS2 in electronic devices requires the development of reliable and cost-effective deposition processes, leading to uniform MoS2 layers on a wafer scale. Here we report on the detailed study of the heterogeneous vapor-solid reaction between a pre-deposited molybdenum solid film and sulfur vapor, thus resulting in a controlled growth of MoS2 films onto SiO2/Si substrates with a tunable thickness and cm(2)-scale uniformity. Based on Raman spectroscopy and photoluminescence, we show that the degree of crystallinity in the MoS2 layers is dictated by the deposition temperature and thickness. In particular, the MoS2 structural disorder observed at low temperature (<750 °C) and low thickness (two layers) evolves to a more ordered crystalline structure at high temperature (1000 °C) and high thickness (four layers). From an atomic force microscopy investigation prior to and after sulfurization, this parametrical dependence is associated with the inherent granularity of the MoS2 nanosheet that is inherited by the pristine morphology of the pre-deposited Mo film. This work paves the way to a closer control of the synthesis of wafer-scale and atomically thin MoS2, potentially extendable to other transition metal dichalcogenides and hence targeting massive and high-volume production for electronic device manufacturing.

Enhanced off-resonance magnetoelectric response in laser annealed PZT thick film grown on magnetostrictive amorphous metal substrate

NASA Astrophysics Data System (ADS)

Palneedi, Haribabu; Maurya, Deepam; Kim, Gi-Yeop; Priya, Shashank; Kang, Suk-Joong L.; Kim, Kwang-Ho; Choi, Si-Young; Ryu, Jungho

2015-07-01

A highly dense, 4 μm-thick Pb(Zr,Ti)O3 (PZT) film is deposited on amorphous magnetostrictive Metglas foil (FeBSi) by granule spray in vacuum process at room temperature, followed by its localized annealing with a continuous-wave 560 nm ytterbium fiber laser radiation. This longer-wavelength laser radiation is able to anneal the whole of thick PZT film layer without any deteriorative effects, such as chemical reaction and/or atomic diffusion, at the interface and crystallization of amorphous Metglas substrate. Greatly enhanced dielectric and ferroelectric properties of the annealed PZT are attributed to its better crystallinity and grain growth induced by laser irradiation. As a result, a colossal off-resonance magnetoelectric (ME) voltage coefficient that is two orders of magnitude larger than previously reported output from PZT/Metglas film-composites is achieved. The present work addresses the problems involved in the fabrication of PZT/Metglas film-composites and opens up emerging possibilities in employing piezoelectric materials with low thermal budget substrates (suitable for integrated electronics) and designing laminate composites for ME based devices.

Influence of artificial pinning centers on structural and superconducting properties of thick YBCO films on ABAD-YSZ templates

NASA Astrophysics Data System (ADS)

Pahlke, Patrick; Sieger, Max; Ottolinger, Rick; Lao, Mayraluna; Eisterer, Michael; Meledin, Alexander; Van Tendeloo, Gustaaf; Hänisch, Jens; Holzapfel, Bernhard; Schultz, Ludwig; Nielsch, Kornelius; Hühne, Ruben

2018-04-01

Recent efforts in the development of YBa2Cu3O7-x (YBCO) coated conductors are devoted to the increase of the critical current I c in magnetic fields. This is typically realized by growing thicker YBCO layers as well as by the incorporation of artificial pinning centers. We studied the growth of doped YBCO layers with a thickness of up to 7 μm using pulsed laser deposition with a growth rate of about 1.2 nm s-1. Industrially fabricated ion-beam textured YSZ templates based on metal tapes were used as substrates for this study. The incorporation of BaHfO3 (BHO) or Ba2Y(Nb0.5Ta0.5)O6 (BYNTO) secondary phase additions leads to a denser microstructure compared to undoped films. A purely c-axis-oriented YBCO growth is preserved up to a thickness of about 4 μm, whereas misoriented texture components were observed in thicker films. The critical temperature is slightly reduced compared to undoped films and independent of film thickness. The critical current density J c of the BHO- and BYNTO-doped YBCO layers is lower at 77 K and self-field compared to pure YBCO layers; however, I c increases up to a thickness of 5 μm. A comparison between films with a thickness of 1.3 μm revealed that the anisotropy of the critical current density J c(θ) strongly depends on the incorporated pinning centers. Whereas BHO nanorods lead to a strong B∣∣c-axis peak, the overall anisotropy is significantly reduced by the incorporation of BYNTO forming a mixture of short c-axis-oriented nanorods and small (a-b)-oriented platelets. As a result, the J c values of the doped films outperform the undoped samples at higher fields and lower temperatures for most magnetic field directions.

Ultralow stress, thermally stable cross-linked polymer films of polydivinylbenzene (PDVB)

DOE PAGES

Lepro, Xavier; Ehrmann, Paul; Menapace, Joseph; ...

2017-05-10

Although closely related to polystyrene, poly(divinylbenzene) (PDVB) has found limited utility due to the difficulties associated with its synthesis. As a highly cross-linked polymer, PDVB is infusible and insoluble and thus nearly impossible to shape into films by either melt or solvent-based processes. Here, we report the initiated chemical vapor deposition (iCVD) of nearly stress-free, highly transparent, free-standing films of PDVB up to 25 μm thick. Films initially grow under tensile intrinsic stress but become more compressive with thickness and eventually converge to zero-stress values once they reach ≥10 μm in thickness. Upon initial heating, the evaporative loss of unreactedmore » monomer left in the polymer matrix induces between 35 and 45 MPa of tensile stress in the films. Afterward, subsequent heating cycles induce reversible stress and film expansion behaviors. We estimate the degree of cross-linking to be 44%, resulting in high thermal stability (up to 300 °C) and mechanical stiffness (Young’s modulus of 5.2 GPa). As a result, the low stress combined with high cross-linking makes iCVD PDVB an excellent candidate for protective coatings in harsh environments.« less

Ultralow stress, thermally stable cross-linked polymer films of polydivinylbenzene (PDVB)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lepro, Xavier; Ehrmann, Paul; Menapace, Joseph

Although closely related to polystyrene, poly(divinylbenzene) (PDVB) has found limited utility due to the difficulties associated with its synthesis. As a highly cross-linked polymer, PDVB is infusible and insoluble and thus nearly impossible to shape into films by either melt or solvent-based processes. Here, we report the initiated chemical vapor deposition (iCVD) of nearly stress-free, highly transparent, free-standing films of PDVB up to 25 μm thick. Films initially grow under tensile intrinsic stress but become more compressive with thickness and eventually converge to zero-stress values once they reach ≥10 μm in thickness. Upon initial heating, the evaporative loss of unreactedmore » monomer left in the polymer matrix induces between 35 and 45 MPa of tensile stress in the films. Afterward, subsequent heating cycles induce reversible stress and film expansion behaviors. We estimate the degree of cross-linking to be 44%, resulting in high thermal stability (up to 300 °C) and mechanical stiffness (Young’s modulus of 5.2 GPa). As a result, the low stress combined with high cross-linking makes iCVD PDVB an excellent candidate for protective coatings in harsh environments.« less

Silicon induced stability and mobility of indium zinc oxide based bilayer thin film transistors

NASA Astrophysics Data System (ADS)

Chauhan, Ram Narayan; Tiwari, Nidhi; Liu, Po-Tsun; Shieh, Han-Ping D.; Kumar, Jitendra

2016-11-01

Indium zinc oxide (IZO), silicon containing IZO, and IZO/IZO:Si bilayer thin films have been prepared by dual radio frequency magnetron sputtering on glass and SiO2/Si substrates for studying their chemical compositions and electrical characteristics in order to ascertain reliability for thin film transistor (TFT) applications. An attempt is therefore made here to fabricate single IZO and IZO/IZO:Si bilayer TFTs to study the effect of film thickness, silicon incorporation, and bilayer active channel on device performance and negative bias illumination stress (NBIS) stability. TFTs with increasing single active IZO layer thickness exhibit decrease in carrier mobility but steady improvement in NBIS; the best values being μFE ˜ 27.0, 22.0 cm2/Vs and ΔVth ˜ -13.00, -6.75 V for a channel thickness of 7 and 27 nm, respectively. While silicon incorporation is shown to reduce the mobility somewhat, it raises the stability markedly (ΔVth ˜ -1.20 V). Further, IZO (7 nm)/IZO:Si (27 nm) bilayer based TFTs display useful characteristics (field effect mobility, μFE = 15.3 cm2/Vs and NBIS value, ΔVth =-0.75 V) for their application in transparent electronics.

Evolutions and equilibrium parameters of foam films from individual solutions of Bovine serum albumin, n-dodecyl-β-D-maltoside and from their mixed solutions

NASA Astrophysics Data System (ADS)

Gerasimova, Anelia Tsvetanova; Angarska, Jana Krumova; Tachev, Krasimir Dimov

2017-03-01

The evolutions of thinning of films from individual solutions of BSA, C12G2 and from their mixed solutions with molar ratios 1:1, 1:7.5, 1:50 and 1:100 with pH = 4.9 were recorded by modified (with video camera) interferometric method. Based on them the stages through which the film goes from its formation to the equilibrium state were distinguished. It was shown that: (i) the difference between the kinetic of drainage of films stabilized by high and low molecular surfactants is drastic; (ii) only the change of the pH solution under or above isoelectric point strongly retards the film drainage; (iii) the transition of the kinetic of thinning of films from mixed solutions from a kinetic typical for high molecular substances towards a kinetic for low substances depends on the molar ratio between the components in the solution. From the picture of film corresponding to its equilibrium state the type of film was determined. From the analysis of this picture the equilibrium thickness and contact angle were calculated. It was found that the criterion for Newtonium black films (based on the values of film thickness and contact angle) is not directly applicable for films from protein solutions or mixed solutions with the participation of proteins.

Electro-physical properties of superconducting ceramic thick film prepared by partial melting method.

PubMed

Lee, Sang Heon

2013-05-01

BiSrCaCuO superconductor thick films were prepared at several curing temperatures, and their electro-physical properties were determined to find an optimum fabrication conditions. Critical temperatures of the superconductors were decreased with increasing melting temperature, which was related to the amount of equilibrium phases of the superconducting materials with temperature. The critical temperature of BiSrCaCuO bulk and thick film superconductors were 107 K and 96 K, respectively. The variation of susceptibility of the superconductor thick film formed at 950 degrees C had multi-step-type curve for 70 G externally applied field, whereas, a superconductor thick film formed at 885 degrees C had a single step-type curve like a bulk BiSrCaCuO ceramic superconductor in the temperature-susceptibility curves. A partial melting at 865 degrees C is one of optimum conditions for making a superconductor thick film with a relatively homogeneous phase.

Effect of film thickness on the ferroelectric and dielectric properties of low-temperature (400 °C) Hf0.5Zr0.5O2 films

NASA Astrophysics Data System (ADS)

Kim, Si Joon; Mohan, Jaidah; Lee, Jaebeom; Lee, Joy S.; Lucero, Antonio T.; Young, Chadwin D.; Colombo, Luigi; Summerfelt, Scott R.; San, Tamer; Kim, Jiyoung

2018-04-01

We report on the effect of the Hf0.5Zr0.5O2 (HZO) film thickness on the ferroelectric and dielectric properties using pulse write/read measurements. HZO films of thicknesses ranging from 5 to 20 nm were annealed at 400 °C for 1 min in a nitrogen ambient to be compatible with the back-end of the line thermal budget. As the HZO film thickness decreases, low-voltage operation (1.0 V or less) can be achieved without the dead layer effect, although switching polarization (Psw) tends to decrease due to the smaller grain size. Meanwhile, for 20-nm-thick HZO films prepared under the identical stress (similar TiN top electrode thickness and thermal budget), the Psw and dielectric constant are reduced because of additional monoclinic phase formation.

Effects of surface contamination on the infrared emissivity and visible-light scattering of highly reflective surfaces at cryogenic temperatures

NASA Technical Reports Server (NTRS)

Viehmann, W.; Eubanks, A. G.

1972-01-01

A technique is described for the simultaneous in situ measurement of film thickness, refractive index, total normal emissivity, visible-light scattering, and reflectance of contaminant films on a highly reflective liquid-nitrogen cooled, stainless steel substrate. Emissivities and scattering data are obtained for films of water, carbon dioxide, silicone oil, and a number of aromatic and aliphatic hydrocarbons as a function of film thickness between zero and 20 microns. Of the contaminants investigated, water has by far the greatest effect on emissivity, followed by silicone oil, aliphatic hydrocarbons, aromatic hydrocarbons, and carbon dioxide. The emissivity increases more rapidly with film thickness between zero and 2.5 microns than at thicknesses greater than 2.5 microns. Scattering of visible light changes very little below 2 microns thickness but increases rapidly with thickness beyond 2 to 3 microns. The effect of contaminant films on passive radiation coolers is discussed.

Determining confounding sensitivities in eddy current thin film measurements

NASA Astrophysics Data System (ADS)

Gros, Ethan; Udpa, Lalita; Smith, James A.; Wachs, Katelyn

2017-02-01

Eddy current (EC) techniques are widely used in industry to measure the thickness of non-conductive films on a metal substrate. This is done by using a system whereby a coil carrying a high-frequency alternating current is used to create an alternating magnetic field at the surface of the instrument's probe. When the probe is brought near a conductive surface, the alternating magnetic field will induce ECs in the conductor. The substrate characteristics and the distance of the probe from the substrate (the coating thickness) affect the magnitude of the ECs. The induced currents load the probe coil affecting the terminal impedance of the coil. The measured probe impedance is related to the lift off between coil and conductor as well as conductivity of the test sample. For a known conductivity sample, the probe impedance can be converted into an equivalent film thickness value. The EC measurement can be confounded by a number of measurement parameters. It was the goal of this research to determine which physical properties of the measurement set-up and sample can adversely affect the thickness measurement. The eddy-current testing was performed using a commercially available, hand-held eddy-current probe (ETA3.3H spring-loaded eddy probe running at 8 MHz) that comes with a stand to hold the probe. The stand holds the probe and adjusts the probe on the z-axis to help position the probe in the correct area as well as make precise measurements. The signal from the probe was sent to a hand-held readout, where the results are recorded directly in terms of liftoff or film thickness. Understanding the effect of certain factors on the measurements of film thickness, will help to evaluate how accurate the ETA3.3H spring-loaded eddy probe was at measuring film thickness under varying experimental conditions. This research studied the effects of a number of factors such as i) conductivity, ii) edge effect, iii) surface finish of base material and iv) cable condition.

A study of growth and thermal dewetting behavior of ultra-thin gold films using transmission electron microscopy

NASA Astrophysics Data System (ADS)

Sudheer, Mondal, Puspen; Rai, V. N.; Srivastava, A. K.

2017-07-01

The growth and solid-state dewetting behavior of Au thin films (0.7 to 8.4 nm) deposited on the formvar film (substrate) by sputtering technique have been studied using transmission electron microscopy. The size and number density of the Au nanoparticles (NPs) change with an increase in the film thickness (0.7 to 2.8 nm). Nearly spherical Au NPs are obtained for <3 nm thickness films whereas percolated nanostructures are observed for ≥3 nm thickness films as a consequence of the interfacial interaction of Au and formvar film. The covered area fraction (CAF) increases from ˜13 to 75 % with the change in film thickness from 0.7 to 8.4 nm. In-situ annealing of ≤3 nm film produces comparatively bigger size and better sphericity Au NPs along with their narrow distributions, whereas just percolated film produces broad distribution in size having spherical as well as elongated Au NPs. The films with thickness ≤3 nm show excellent thermal stability. The films having thickness >6 nm show capability to be used as an irreversible temperature sensor with a sensitivity of ˜0.1 CAF/°C. It is observed that annealing affects the crystallinity of the Au grains in the films. The electron diffraction measurement also shows annealing induced morphological evolution in the percolated Au thin films (≥3 nm) during solid-state dewetting and recrystallization of the grains.

The Effects of Ultra Thin Films on Dynamic Wetting

NASA Astrophysics Data System (ADS)

Chen, Xia; Garoff, Stephen; Rame, Enrique

2002-11-01

Dynamic wetting, the displacement of one fluid by another immiscible fluid on a surface, controls many natural and technological phenomena, such as coating, printing, spray painting and lubricating. Particularly in coating and spraying applications, contact lines advance across pre-existing fluid films. Most previous work has focused on contact lines advancing across films sufficiently thick that they behave as simple Newtonian fluids. Ultrathin films, where the film thickness may impinge on fundamental length scales in the fluid, have received less attention. In this talk, we will discuss the effects of ultrathin polymer films on dynamic wetting. We measure the interface shape within microns of moving contact lines advancing across preexisting films and compare the measurements to existing models of viscous bending for interfaces advancing across dry surfaces and 'thick' (in the sense that they behave as liquids) films. In the experiments, we advance a contact line of 10-poise and 1-poise polydimethylsiloxane (silicone oil) across pre-coated films of the same fluid with thickness from a single chain thickness (approx. 10 A) through a couple of radii of gyration (100-200 A) to films so thick they are likely bulk in behavior (103 A). All films are physisorbed, i.e. they readily rinse from the surface. Thus, molecules in the film are not anchored to the surface and can move within the film if the hydrodynamics dictate such motion. For films of the thickness of a single chain (approx. 10 A), our experiments indicate that the advancing fluid behaves just as it would if it advanced over a dry surface. For the thicker films (103 A), we find behavior indicating that the molecules in the film are acting as a fluid with the bulk properties. In this regime, results for the two different fluids are identical when the experiments are performed at the same pre-existing film thickness and advancing capillary number, Ca. For film of thickness of a few radii of gyration (approx. 100-200 A), the behavior depends on Ca of the advancing meniscus. At low Ca, the viscous bending of the interface near the contact line does not behave as it would on a dry surface. It has a lower curvature than expected. However, at higher Ca, the viscous bending is described by the model for spreading over a dry surface. These results show that the fluid flow in the film does behave differently than bulk as the film thickness becomes comparable to molecular length scale. But even more intriguing is the unusual velocity dependence of that behavior where the film behaves more solid-like at higher contact line speeds. We will discuss these results in terms of the properties of confined polymer melts.

The Effects of Ultra Thin Films on Dynamic Wetting

NASA Technical Reports Server (NTRS)

Chen, Xia; Garoff, Stephen; Rame, Enrique

2002-01-01

Dynamic wetting, the displacement of one fluid by another immiscible fluid on a surface, controls many natural and technological phenomena, such as coating, printing, spray painting and lubricating. Particularly in coating and spraying applications, contact lines advance across pre-existing fluid films. Most previous work has focused on contact lines advancing across films sufficiently thick that they behave as simple Newtonian fluids. Ultrathin films, where the film thickness may impinge on fundamental length scales in the fluid, have received less attention. In this talk, we will discuss the effects of ultrathin polymer films on dynamic wetting. We measure the interface shape within microns of moving contact lines advancing across preexisting films and compare the measurements to existing models of viscous bending for interfaces advancing across dry surfaces and 'thick' (in the sense that they behave as liquids) films. In the experiments, we advance a contact line of 10-poise and 1-poise polydimethylsiloxane (silicone oil) across pre-coated films of the same fluid with thickness from a single chain thickness (approx. 10 A) through a couple of radii of gyration (100-200 A) to films so thick they are likely bulk in behavior (10(exp 3) A). All films are physisorbed, i.e. they readily rinse from the surface. Thus, molecules in the film are not anchored to the surface and can move within the film if the hydrodynamics dictate such motion. For films of the thickness of a single chain (approx. 10 A), our experiments indicate that the advancing fluid behaves just as it would if it advanced over a dry surface. For the thicker films (10(exp 3) A), we find behavior indicating that the molecules in the film are acting as a fluid with the bulk properties. In this regime, results for the two different fluids are identical when the experiments are performed at the same pre-existing film thickness and advancing capillary number, Ca. For film of thickness of a few radii of gyration (approx. 100-200 A), the behavior depends on Ca of the advancing meniscus. At low Ca, the viscous bending of the interface near the contact line does not behave as it would on a dry surface. It has a lower curvature than expected. However, at higher Ca, the viscous bending is described by the model for spreading over a dry surface. These results show that the fluid flow in the film does behave differently than bulk as the film thickness becomes comparable to molecular length scale. But even more intriguing is the unusual velocity dependence of that behavior where the film behaves more solid-like at higher contact line speeds. We will discuss these results in terms of the properties of confined polymer melts.

Polyurethane Ionophore-Based Thin Layer Membranes for Voltammetric Ion Activity Sensing.

PubMed

Cuartero, Maria; Crespo, Gaston A; Bakker, Eric

2016-06-07

We report on a plasticized polyurethane ionophore-based thin film material (of hundreds of nanometer thickness) for simultaneous voltammetric multianalyte ion activity detection triggered by the oxidation/reduction of an underlying poly(3-octylthiophene) film. This material provides excellent mechanical, physical, and chemical robustness compared to other polymers. Polyurethane films did not exhibit leaching of lipophilic additives after rinsing with a direct water jet and exhibited resistance to detachment from the underlying electrode surface, resulting in a voltammetric current response with less than <1.5% RSD variation (n = 50). In contrast, plasticized poly(vinyl chloride), polystyrene, and poly(acrylate) ionophore-based membranes of the same thickness and composition exhibited a significant deterioration of the signal after identical treatment. While previously reported works emphasized fundamental advancement of multi-ion detection with multi-ionophore-based thin films, polyurethane thin membranes allow one to achieve real world measurements without sacrificing analytical performance. Indeed, polyurethane membranes are demonstrated to be useful for the simultaneous determination of potassium and lithium in undiluted human serum and blood with attractive precision.

N-polar InGaN-based LEDs fabricated on sapphire via pulsed sputtering

NASA Astrophysics Data System (ADS)

Ueno, Kohei; Kishikawa, Eiji; Ohta, Jitsuo; Fujioka, Hiroshi

2017-02-01

High-quality N-polar GaN epitaxial films with an atomically flat surface were grown on sapphire (0001) via pulsed sputtering deposition, and their structural and electrical properties were investigated. The crystalline quality of N-polar GaN improves with increasing film thickness and the full width at half maximum values of the x-ray rocking curves for 0002 and 101 ¯ 2 diffraction were 313 and 394 arcsec, respectively, at the film thickness of 6 μ m . Repeatable p-type doping in N-polar GaN films was achieved using Mg dopant, and their hole concentration and mobility can be controlled in the range of 8 × 1016-2 × 1018 cm-3 and 2-9 cm2V-1s-1, respectively. The activation energy of Mg in N-polar GaN based on a temperature-dependent Hall measurement was estimated to be 161 meV, which is comparable to that of the Ga-polar GaN. Based on these results, we demonstrated the fabrication of N-polar InGaN-based light emitting diodes with the long wavelength up to 609 nm.

Electrical, optical and structural properties of transparent conducting Al doped ZnO (AZO) deposited by sol-gel spin coating

NASA Astrophysics Data System (ADS)

Tonny, Kaniz Naila; Rafique, Rosaleena; Sharmin, Afrina; Bashar, Muhammad Shahriar; Mahmood, Zahid Hasan

2018-06-01

Al doped ZnO (AZO) films are fabricated by using sol-gel spin coating method and changes in electrical, optical and structural properties due to variation in film thickness is studied. AZO films provide c-axis orientation along the (002) plane and peak sharpness increased with film thickness is evident from XRD analysis. Conductivity (σ) of AZO films has increased from 2.34 (Siemens/cm) to 20156.27 (Siemens/cm) whereas sheet resistance (Rsh) decreases from 606300 (ohms/sq.) to 2.08 (ohm/sq.) with increase of film thickness from 296 nm to 1030 nm. Optical transmittance (T%) of AZO films is decreased from around 82% to 62% in the visible region. And grain size (D) of AZO thin films has been found to increase from 19.59 nm to 25.25 nm with increase of film thickness. Figure of Merit is also calculated for prepared sample of AZO. Among these four sample of AZO thin films, L-15 sample (having thickness in 895 nm) has provided highest figure of merit which is 5.49*10^-4 (Ω-1).

How Small is too Small True Microrobots and Nanorobots for Military Applications in 2035

DTIC Science & Technology

2010-04-01

field effect transistor or diode junction based.41 Additionally, NEMS sensors based on resonating thin films and nanowires42 and optical based...acoustic sensor is fabricated from piezoelectric thin films and measures 600 µm by 600 µm by 2.2 µm thick with a total volume of 0.0008 mm3.50 Since...microrobot systems by 2035. Reduction in thin film width dimensions (under 600 µm), in order to be able to physically incorporate this into a

Microstructure and thermochromic properties of VOX-WOX-VOX ceramic thin films

NASA Astrophysics Data System (ADS)

Khamseh, S.; Araghi, H.; Ghahari, M.; Faghihi Sani, M. A.

2016-03-01

W-doped VO2 films have been synthesized via oxygen annealing of V-W-V (vanadium-tungsten-vanadium) multilayered films. The effects of middle layer's thickness of V-W-V multilayered film on structure and properties of VOX-WOX-VOX ceramic thin films were investigated. The as-deposited V-W-V multilayered film showed amorphous-like structure when mixed structure of VO2 (M) and VO2 (B) was formed in VOX-WOX-VOX ceramic thin films. Tungsten content of VOX-WOX-VOX ceramic thin films increased with increasing middle layer's thickness. With increasing middle layer's thickness, room temperature square resistance ( R sq) of VOX-WOX-VOX ceramic thin films increased from 65 to 86 kΩ/sq. The VOX-WOX-VOX ceramic thin film with the thinnest middle layer showed significant SMT (semiconductor-metal transition) when SMT became negligible on increasing middle layer's thickness.

Enhancing Performance of Large-Area Organic Solar Cells with Thick Film via Ternary Strategy.

PubMed

Zhang, Jianqi; Zhao, Yifan; Fang, Jin; Yuan, Liu; Xia, Benzheng; Wang, Guodong; Wang, Zaiyu; Zhang, Yajie; Ma, Wei; Yan, Wei; Su, Wenming; Wei, Zhixiang

2017-06-01

Large-scale fabrication of organic solar cells requires an active layer with high thickness tolerability and the use of environment-friendly solvents. Thick films with high-performance can be achieved via a ternary strategy studied herein. The ternary system consists of one polymer donor, one small molecule donor, and one fullerene acceptor. The small molecule enhances the crystallinity and face-on orientation of the active layer, leading to improved thickness tolerability compared with that of a polymer-fullerene binary system. An active layer with 270 nm thickness exhibits an average power conversion efficiency (PCE) of 10.78%, while the PCE is less than 8% with such thick film for binary system. Furthermore, large-area devices are successfully fabricated using polyethylene terephthalate (PET)/Silver gride or indium tin oxide (ITO)-based transparent flexible substrates. The product shows a high PCE of 8.28% with an area of 1.25 cm 2 for a single cell and 5.18% for a 20 cm 2 module. This study demonstrates that ternary organic solar cells exhibit great potential for large-scale fabrication and future applications. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Uribe, Fernando; Vianco, Paul Thomas; Zender, Gary L.

A study was performed that examined the microstructure and mechanical properties of 63Sn-37Pb (wt.%, Sn-Pb) solder joints made to thick film layers on low-temperature co-fired (LTCC) substrates. The thick film layers were combinations of the Dupont{trademark} 4596 (Au-Pt-Pd) conductor and Dupont{trademark} 5742 (Au) conductor, the latter having been deposited between the 4596 layer and LTCC substrate. Single (1x) and triple (3x) thicknesses of the 4596 layer were evaluated. Three footprint sizes were evaluated of the 5742 thick film. The solder joints exhibited excellent solderability of both the copper (Cu) lead and thick film surface. In all test sample configurations, themore » 5742 thick film prevented side wall cracking of the vias. The pull strengths were in the range of 3.4-4.0 lbs, which were only slightly lower than historical values for alumina (Al{sub 2}O{sub 3}) substrates. General (qualitative) observations: (a) The pull strength was maximized when the total number of thick film layers was between two and three. Fewer that two layers did not develop as strong of a bond at the thick film/LTCC interface; more than three layers and of increased footprint area, developed higher residual stresses at the thick film/LTCC interface and in the underlying LTCC material that weakened the joint. (b) Minimizing the area of the weaker 4596/LTCC interface (e.g., larger 5742 area) improved pull strength. Specific observations: (a) In the presence of vias and the need for the 3x 4596 thick film, the preferred 4596:5742 ratio was 1.0:0.5. (b) For those LTCC components that require the 3x 4596 layer, but do not have vias, it is preferred to refrain from using the 5742 layer. (c) In the absence of vias, the highest strength was realized with a 1x thick 5742 layer, a 1x thick 4596 layer, and a footprint ratio of 1.0:1.0.« less

Glass transition in thin supported polystyrene films probed by temperature-modulated ellipsometry in vacuum.

PubMed

Efremov, Mikhail Yu; Kiyanova, Anna V; Last, Julie; Soofi, Shauheen S; Thode, Christopher; Nealey, Paul F

2012-08-01

Glass transition in thin (1-200 nm thick) spin-cast polystyrene films on silicon surfaces is probed by ellipsometry in a controlled vacuum environment. A temperature-modulated modification of the method is used alongside a traditional linear temperature scan. A clear glass transition is detected in films with thicknesses as low as 1-2 nm. The glass transition temperature (T(g)) shows no substantial dependence on thickness for coatings greater than 20 nm. Thinner films demonstrate moderate T(g) depression achieving 18 K for thicknesses 4-7 nm. Less than 4 nm thick samples are excluded from the T(g) comparison due to significant thickness nonuniformity (surface roughness). The transition in 10-20 nm thick films demonstrates excessive broadening. For some samples, the broadened transition is clearly resolved into two separate transitions. The thickness dependence of the glass transition can be well described by a simple 2-layer model. It is also shown that T(g) depression in 5 nm thick films is not sensitive to a wide range of experimental factors including molecular weight characteristics of the polymer, specifications of solvent used for spin casting, substrate composition, and pretreatment of the substrate surface.

Electrical and optical properties of sub-10 nm nickel silicide films for silicon solar cells

NASA Astrophysics Data System (ADS)

Brahmi, Hatem; Ravipati, Srikanth; Yarali, Milad; Shervin, Shahab; Wang, Weijie; Ryou, Jae-Hyun; Mavrokefalos, Anastassios

2017-01-01

Highly conductive and transparent films of ultra-thin p-type nickel silicide films have been prepared by RF magnetron sputtering of nickel on silicon substrates followed by rapid thermal annealing in an inert environment in the temperature range 400-600 °C. The films are uniform throughout the wafer with thicknesses in the range of 3-6 nm. The electrical and optical properties are presented for nickel silicide films with varying thickness. The Drude-Lorentz model and Fresnel equations were used to calculate the dielectric properties, sheet resistance, absorption and transmission of the films. These ultrathin nickel silicide films have excellent optoelectronic properties for p-type contacts with optical transparencies up to 80% and sheet resistance as low as ~0.15 µΩ cm. Furthermore, it was shown that the use of a simple anti-reflection (AR) coating can recover most of the reflected light approaching the values of a standard Si solar cell with the same AR coating. Overall, the combination of ultra-low thickness, high transmittance, low sheet resistance and ability to recover the reflected light by utilizing standard AR coating makes them ideal for utilization in silicon based photovoltaic technologies as a p-type transparent conductor.

Influences of film thickness on the structural, electrical and optical properties of CuAlO2 thin films

NASA Astrophysics Data System (ADS)

Dong, Guobo; Zhang, Ming; Wang, Mei; Li, Yingzi; Gao, Fangyuan; Yan, Hui; Diao, Xungang

2014-07-01

CuAlO2 films with different thickness were prepared by the radio frequency magnetron sputtering technique. The structural, electrical and optical properties of CuAlO2 were studied by X-ray diffraction, atomic force microscope, UV-Vis double-beam spectrophotometer and Hall measurements. The results indicate that the single phase hexagonal CuAlO2 is formed and the average grain size of CuAlO2 films increases with increasing film thickness. The results also exhibit that the lowering of bandgap and the increase of electrical conductivity of CuAlO2 films with the increase of their thickness, which are attributed to the improvement of the grain size and the anisotropic electrical property. According to the electrical and optical properties, the biggest figure of merit is achieved for the CuAlO2 film with the appropriate thickness of 165 nm.

Film thickness measurement for spiral groove and Rayleigh step lift pad self-acting face seals

NASA Technical Reports Server (NTRS)

Dirusso, E.

1982-01-01

One Rayleigh step lift pad and three spiral groove self-acting face seal configurations were tested to measure film thickness and frictional torque as a function of shaft speed. The seals were tested at a constant face load of 73 N (16.4 lb) with ambient air at room temperature and atmospheric pressure as the fluid medium. The test speed range was from 7000 to 17,000 rpm. The measured film thickness was compared with theoretical data from mathematical models. The mathematical models overpredicted the measured film thickness at the lower speeds of the test speed range and underpredicted the measured film thickness at the higher speeds of the test speed range.

Co and Fe doping effect on negative temperature coefficient characteristics of nano-grained NiMn2O4 thick films fabricated by aerosol-deposition.

PubMed

Ryu, Jungho; Han, Guifang; Lee, Jong-Pil; Lim, Dong-Soo; Park, Yun-Soo; Jeong, Dae-Yong

2013-05-01

Spinel structured highly dense NiMn2O4-based (NMO) negative temperature coefficient (NTC) thermistor thick films were fabricated by aerosol-deposition at room temperature. To enhance the thermistor B constant, which represents the temperature sensitivity of the NMO thermistor material, Co and Co-Fe doping was applied. In the case of single element doping of Co, 5 mol% doped NMO showed a high B constant of over 5000 K, while undoped NMO showed -4000 K. By doping Fe to the 5 mol% Co doped NMO, the B constant was more enhanced at over 5600 K. The aging effect on the NTC characteristics of Co doped and Fe-Co co-doped NMO thick film showed very stable resistivity-time characteristics because of the highly dense microstructure.

Reduced temperature-dependent thermal conductivity of magnetite thin films by controlling film thickness

PubMed Central

2014-01-01

We report on the out-of-plane thermal conductivities of epitaxial Fe3O4 thin films with thicknesses of 100, 300, and 400 nm, prepared using pulsed laser deposition (PLD) on SiO2/Si substrates. The four-point probe three-omega (3-ω) method was used for thermal conductivity measurements of the Fe3O4 thin films in the temperature range of 20 to 300 K. By measuring the temperature-dependent thermal characteristics of the Fe3O4 thin films, we realized that their thermal conductivities significantly decreased with decreasing grain size and thickness of the films. The out-of-plane thermal conductivities of the Fe3O4 films were found to be in the range of 0.52 to 3.51 W/m · K at 300 K. For 100-nm film, we found that the thermal conductivity was as low as approximately 0.52 W/m · K, which was 1.7 to 11.5 order of magnitude lower than the thermal conductivity of bulk material at 300 K. Furthermore, we calculated the temperature dependence of the thermal conductivity of these Fe3O4 films using a simple theoretical Callaway model for comparison with the experimental data. We found that the Callaway model predictions agree reasonably with the experimental data. We then noticed that the thin film-based oxide materials could be efficient thermoelectric materials to achieve high performance in thermoelectric devices. PMID:24571956

Polyelectrolyte-mediated assembly of copper-phthalocyanine tetrasulfonate multilayers and the subsequent production of nanoparticulate copper oxide thin films.

PubMed

Chickneyan, Zarui Sara; Briseno, Alejandro L; Shi, Xiangyang; Han, Shubo; Huang, Jiaxing; Zhou, Feimeng

2004-07-01

An approach to producing films of nanometer-sized copper oxide particulates, based on polyelectrolyte-mediated assembly of the precursor, copper(II)phthalocyanine tetrasulfonate (CPTS), is described. Multilayered CPTS and polydiallyldimethylammonium chloride (PDADMAC) were alternately assembled on different planar substrates via the layer-by-layer (LbL) procedure. The growth of CPTS multilayers was monitored by UV-visible spectrometry and quartz crystal microbalance (QCM) measurements. Both the UV-visible spectra and the QCM data showed that a fixed amount of CPTS could be attached to the substrate surface for a given adsorption cycle. Cyclic voltammograms at the CPTS/PDADMAC-covered gold electrode exhibited a decrease in peak currents with the layer number, indicating that the permeability of CPTS multilayers on the electrodes had diminished. When these CPTS multilayered films were calcined at elevated temperatures, uniform thin films composed of nanoparticulate copper oxide could be produced. Ellipsometry showed that the thickness of copper oxide nanoparticulate films could be precisely tailored by varying the thickness of CPTS multilayer films. The morphology and roughness of CPTS multilayer and copper oxide thin films were characterized by atomic force microscopy. X-ray diffraction (XRD) measurements indicated that these thin films contained both CuO and Cu2O nanoparticles. The preparation of such copper oxide thin films with the use of metal complex precursors represents a new route for the synthesis of inorganic oxide films with a controlled thickness.

Progress in thin-film silicon solar cells based on photonic-crystal structures

NASA Astrophysics Data System (ADS)

Ishizaki, Kenji; De Zoysa, Menaka; Tanaka, Yoshinori; Jeon, Seung-Woo; Noda, Susumu

2018-06-01

We review the recent progress in thin-film silicon solar cells with photonic crystals, where absorption enhancement is achieved by using large-area resonant effects in photonic crystals. First, a definitive guideline for enhancing light absorption in a wide wavelength range (600–1100 nm) is introduced, showing that the formation of multiple band edges utilizing higher-order modes confined in the thickness direction and the introduction of photonic superlattice structures enable significant absorption enhancement, exceeding that observed for conventional random scatterers. Subsequently, experimental evidence of this enhancement is demonstrated for a variety of thin-film Si solar cells: ∼500-nm-thick ultrathin microcrystalline silicon cells, few-µm-thick microcrystalline silicon cells, and ∼20-µm-thick thin single-crystalline silicon cells. The high short-circuit current densities and/or efficiencies observed for each cell structure confirm the effectiveness of using multiple band-edge resonant modes of photonic crystals for enhancing broadband absorption in actual solar cells.

Development of Thick-Film Thermoelectric Microcoolers Using Electrochemical Deposition

NASA Technical Reports Server (NTRS)

Fleurial, J.-P.; Borshchevsky, A.; Ryan, M. A.; Phillips, W. M.; Snyder, J. G.; Caillat, T.; Kolawa, E. A.; Herman, J. A.; Mueller, P.; Nicolet, M.

2000-01-01

Advanced thermoelectric microdevices integrated into thermal management packages and low power, electrical source systems are of interest for a variety of space and terrestrial applications. By shrinking the size of the thermoelements, or legs, of these devices, it becomes possible to handle much higher heat fluxes, as well as operate at much lower currents and higher voltages that are more compatible with electronic components. The miniaturization of state-of-the-art thermoelectric module technology based on Bi2Te3 alloys is limited due to mechanical and manufacturing constraints for both leg dimensions (100-200 gm thick minimum) and the number of legs (100-200 legs maximum). We are investigating the development of novel microdevices combining high thermal conductivity substrate materials such as diamond, thin film metallization and patterning technology, and electrochemical deposition of thick thermoelectric films. It is anticipated that thermoelectric microcoolers with thousands of thermocouples and capable of pumping more than 200 W/sq cm over a 30 to 60 K temperature difference can be fabricated. In this paper, we report on our progress in developing an electrochemical deposition process for obtaining 10-50 microns thick films of Bi2Te3 and its solid solutions. Results presented here indicate that good quality n-type Bi2Te3, n-type Bi2Te(2.95)Se(0.05) and p-type Bi(0.5)Sb(1.5)Te3 thick films can be deposited by this technique. Some details about the fabrication of the miniature thermoelements are also described.

Characteristics of a thick film ethanol gas sensor made of mechanically treated LaFeO3 powder

NASA Astrophysics Data System (ADS)

Suhendi, Endi; Witra, Hasanah, Lilik; Syarif, Dani Gustaman

2017-05-01

In this work, fabrication of LaFeO3 thick film ceramics for ethanol gas sensor made of mechanically treated (milling) powder was studied. The thick films were fabricated using screen printing technique from LaFeO3 powder treated by HEM (High Energy Milling). The films were baked at 800°C for one hour and analyzed using XRD and SEM. Sensitivity of the films was studied by measuring resistance of them at various temperatures in a chamber containing air with and without ethanol gas. Data of XRD showed that the thick film crystalizes in orthorombic structure with space group of Pn*a. SEM data showed that the films consisted of small grains with grain size of about 225 nm. According to the electrical data, the LaFeO3 thick films that produced in this work could be applied as ethanol gas with operating temperature of about 275°C.

Optical and structural properties of indium doped bismuth selenide thin films

NASA Astrophysics Data System (ADS)

Pavagadhi, Himanshu; Vyas, S. M.; Patel, Piyush; Patel, Vimal; Patel, Jaydev; Jani, M. P.

2015-08-01

In: Bi2Se3 crystals were grown by Bridgman method at a growth velocity of 0.5cm/h with temperature gradient of 650 C/cm in our laboratory. The thin films of In:Bi2se3 were grown on amorphous substrate (glass) at a room temperature under a pressure of 10-4Pa by thermal evaporation technique. Thin film were deposited at various thicknesses and optical absorption spectrum of such thin films, obtain in wave no. range 300 to 2600 cm-1. The optical energy gap calculated from this data were found to be inverse function of square of thickness, particularly for thickness about 1800 Å or less. This dependence is explained in terms of quantum size effect. For thicker films, the bandgap is found to be independent of film thickness. For the surface stud of the as grown thin film by using AFM, which shows continuous film with some step height and surface roughness found in terms of few nm and particle size varies with respect to thickness.

Optimized ion acceleration using high repetition rate, variable thickness liquid crystal targets

NASA Astrophysics Data System (ADS)

Poole, Patrick; Willis, Christopher; Cochran, Ginevra; Andereck, C. David; Schumacher, Douglass

2015-11-01

Laser-based ion acceleration is a widely studied plasma physics topic for its applications to secondary radiation sources, advanced imaging, and cancer therapy. Recent work has centered on investigating new acceleration mechanisms that promise improved ion energy and spectrum. While the physics of these mechanisms is not yet fully understood, it has been observed to dominate for certain ranges of target thickness, where the optimum thickness depends on laser conditions including energy, pulse width, and contrast. The study of these phenomena is uniquely facilitated by the use of variable-thickness liquid crystal films, first introduced in P. L. Poole et al. PoP21, 063109 (2014). Control of the formation parameters of these freely suspended films such as volume, temperature, and draw speed allows on-demand thickness variability between 10 nanometers and several 10s of microns, fully encompassing the currently studied thickness regimes with a single target material. The low vapor pressure of liquid crystal enables in-situ film formation and unlimited vacuum use of these targets. Details on the selection and optimization of ion acceleration mechanism with target thickness will be presented, including recent experiments on the Scarlet laser facility and others. This work was performed with support from the DARPA PULSE program through a grant from AMRDEC and by the NNSA under contract DE-NA0001976.

Modeling and sensitivity analysis of mass transfer in active multilayer polymeric film for food applications

NASA Astrophysics Data System (ADS)

Bedane, T.; Di Maio, L.; Scarfato, P.; Incarnato, L.; Marra, F.

2015-12-01

The barrier performance of multilayer polymeric films for food applications has been significantly improved by incorporating oxygen scavenging materials. The scavenging activity depends on parameters such as diffusion coefficient, solubility, concentration of scavenger loaded and the number of available reactive sites. These parameters influence the barrier performance of the film in different ways. Virtualization of the process is useful to characterize, design and optimize the barrier performance based on physical configuration of the films. Also, the knowledge of values of parameters is important to predict the performances. Inverse modeling and sensitivity analysis are sole way to find reasonable values of poorly defined, unmeasured parameters and to analyze the most influencing parameters. Thus, the objective of this work was to develop a model to predict barrier properties of multilayer film incorporated with reactive layers and to analyze and characterize their performances. Polymeric film based on three layers of Polyethylene terephthalate (PET), with a core reactive layer, at different thickness configurations was considered in the model. A one dimensional diffusion equation with reaction was solved numerically to predict the concentration of oxygen diffused into the polymer taking into account the reactive ability of the core layer. The model was solved using commercial software for different film layer configurations and sensitivity analysis based on inverse modeling was carried out to understand the effect of physical parameters. The results have shown that the use of sensitivity analysis can provide physical understanding of the parameters which highly affect the gas permeation into the film. Solubility and the number of available reactive sites were the factors mainly influencing the barrier performance of three layered polymeric film. Multilayer films slightly modified the steady transport properties in comparison to net PET, giving a small reduction in the permeability and oxygen transfer rate values. Scavenging capacity of the multilayer film increased linearly with the increase of the reactive layer thickness and the oxygen absorption reaction at short times decreased proportionally with the thickness of the external PET layer.

Modeling and sensitivity analysis of mass transfer in active multilayer polymeric film for food applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bedane, T.; Di Maio, L.; Scarfato, P.

The barrier performance of multilayer polymeric films for food applications has been significantly improved by incorporating oxygen scavenging materials. The scavenging activity depends on parameters such as diffusion coefficient, solubility, concentration of scavenger loaded and the number of available reactive sites. These parameters influence the barrier performance of the film in different ways. Virtualization of the process is useful to characterize, design and optimize the barrier performance based on physical configuration of the films. Also, the knowledge of values of parameters is important to predict the performances. Inverse modeling and sensitivity analysis are sole way to find reasonable values ofmore » poorly defined, unmeasured parameters and to analyze the most influencing parameters. Thus, the objective of this work was to develop a model to predict barrier properties of multilayer film incorporated with reactive layers and to analyze and characterize their performances. Polymeric film based on three layers of Polyethylene terephthalate (PET), with a core reactive layer, at different thickness configurations was considered in the model. A one dimensional diffusion equation with reaction was solved numerically to predict the concentration of oxygen diffused into the polymer taking into account the reactive ability of the core layer. The model was solved using commercial software for different film layer configurations and sensitivity analysis based on inverse modeling was carried out to understand the effect of physical parameters. The results have shown that the use of sensitivity analysis can provide physical understanding of the parameters which highly affect the gas permeation into the film. Solubility and the number of available reactive sites were the factors mainly influencing the barrier performance of three layered polymeric film. Multilayer films slightly modified the steady transport properties in comparison to net PET, giving a small reduction in the permeability and oxygen transfer rate values. Scavenging capacity of the multilayer film increased linearly with the increase of the reactive layer thickness and the oxygen absorption reaction at short times decreased proportionally with the thickness of the external PET layer.« less

Passport examination by a confocal-type laser profile microscope.

PubMed

Sugawara, Shigeru

2008-06-10

The author proposes a nondestructive and highly precise method of measuring the thickness of a film pasted on a passport using a confocal-type laser profile microscope. The effectiveness of this method in passport examination is demonstrated. A confocal-type laser profile microscope is used to create profiles of the film surface and film-paper interface; these profiles are used to calculate the film thickness by employing an algorithm developed by the author. The film thicknesses of the passport samples--35 genuine and 80 counterfeit Japanese passports--are measured nondestructively. The intra-sample standard deviation of the film thicknesses of the genuine and counterfeit Japanese passports was of the order of 1 microm The intersample standard deviations of the film thicknesses of passports forged using the same tools and techniques are expected to be of the order of 1 microm. The thickness values of the films on the machine-readable genuine passports ranged between 31.95 microm and 36.95 microm. The likelihood ratio of this method in the authentication of machine-readable Japanese genuine passports is 11.7. Therefore, this method is effective for the authentification of genuine passports. Since the distribution of the film thickness of all forged passports was considerably larger than the accuracy of this method, this method is considered effective also for revealing the relation among the forged passports and acquiring proof of the crime.

Scanning angle Raman spectroscopy: A nondestructive method for simultaneously determining mixed polymer fractional composition and film thickness

DOE PAGES

Bobbitt, Jonathan M.; Mendivelso-Pérez, Deyny; Smith, Emily A.

2016-11-03

A scanning angle (SA) Raman spectroscopy method was developed to simultaneously measure the chemical composition and thickness of waveguide mixed polymer films with varying fractional compositions. In order to test the method, six films of polystyrene-block-poly(methyl methacrylate), some mixed with poly(methyl methacrylate) homopolymer (PS-b-PMMA:PMMA), and two films of poly(2-vinylnapthalene)-block-poly(methyl methacrylate) (P2VN-b-PMMA) were prepared. The film thickness ranged from 495 to 971 nm. The chemical composition and thickness of PS-b-PMMA:PMMA films was varied by the addition of the PMMA homopolymer and annealing the films in toluene. SA Raman peak amplitude ratios (1001 cm -1 for PS, 812 cm -1 for PMMA,more » and 1388 cm -1 for P2VN) were used to calculate the refractive index of the polymer film, an input parameter in calculations of the sum square electric field (SSEF). The film thickness was determined by SSEF models of the experimental Raman amplitudes versus the incident angle of light. The average film thickness determined by the developed SA Raman spectroscopy method was within 5% of the value determined by optical profilometry. In conclusion, SA Raman spectroscopy will be useful for in situ label-free analyses of mixed polymer waveguide films.« less

Swift heavy-ions induced sputtering in BaF2 thin films

NASA Astrophysics Data System (ADS)

Pandey, Ratnesh K.; Kumar, Manvendra; Singh, Udai B.; Khan, Saif A.; Avasthi, D. K.; Pandey, Avinash C.

2013-11-01

In our present experiment a series of barium fluoride thin films of different thicknesses have been deposited by electron beam evaporation technique at room temperature on silicon substrates. The effect of film thickness on the electronic sputter yield of polycrystalline BaF2 thin films has been reported in the present work. Power law for sputtered species collected on catcher grids has also been reported for film of lowest thickness. Sputtering has been performed by 100 MeV Au+28 ions. Atomic force microscopy (AFM) has been done to check the surface morphology of pristine samples. Glancing angle X-ray diffraction (GAXRD) measurements show that the pristine films are polycrystalline in nature and the grain size increases with increase in film thickness. Rutherford backscattering spectrometry (RBS) of pristine as well as irradiated films was done to determine the areal concentration of Ba and F atoms in the films. A reduction in the sputter yield of BaF2 films with the increase in film thickness has been observed from RBS results. The thickness dependence sputtering is explained on the basis of thermal spike and the energy confinement of the ions in the smaller grains. Also transmission electron microscopy (TEM) of the catchers shows a size distribution of sputtered species with values of power law exponent 1/2 and 3/2 for two fluences 5 × 1011 and 1 × 1012 ions/cm2, respectively.

Effect of protein concentrations on the properties of fish myofibrillar protein based film compared with PVC film.

PubMed

Kaewprachu, Pimonpan; Osako, Kazufumi; Benjakul, Soottawat; Rawdkuen, Saroat

2016-04-01

The effect of protein concentrations on the properties of fish myofibrillar protein film (FMP) were investigated and compared with commercial wrap film (polyvinyl chloride; PVC). FMP (2 %, w/v) showed the highest mechanical properties [tensile strength: 4.38 MPa and elongation at break: 133.05 %], and water vapor permeability [2.81 × 10(-10) g m(-1) s(-1) Pa(-1)]. FMP contained high molecular weight cross-links, resulting in complex film network, as indicated by lower film solubility (19-22 %) and protein solubility (0.6-1.3 %). FMP showed excellent barrier properties to UV light at the wavelength of 200-280 nm. FMP had the thickness [0.007-0.032 mm], color attributes and transparency similar to PVC film [thickness: 0.010 mm]. Therefore, protein concentration majority influenced the properties of develop FMP. The protein content of 1 % (w/v) had potential to be developed the biodegradable film with comparable properties to the commercial wrap film.

Development of an all-metal thick film cost effective metallization system for solar cells

NASA Technical Reports Server (NTRS)

Ross, B.; Parker, J.

1983-01-01

Improved thick film solar cell contacts for the high volume production of low cost silicon solar arrays are needed. All metal screenable pastes made from economical base metals and suitable for application to low to high conductivity silicon were examined. Silver fluoride containing copper pastes and fluorocarbon containing copper pastes were discussed. The effect of hydrogen on the adhesion of metals to silicon was investigated. A cost analysis of various paste materials is provided.

A low-cost photovoltaic cell process based on thick film techniques

NASA Technical Reports Server (NTRS)

Mardesich, N.; Pepe, A.; Bunyan, S.; Edwards, B.; Olson, C.

1980-01-01

The low-cost, easily automated processing for solar cell fabrication being developed at Spectrolab for the DOE LSA program is described. These processes include plasma-etching, spray-on diffusion sources and antireflective coating, thick film metallization, aluminum back contacts, laser scribing and ultrasonic soldering. The process sequence has been shown to produce solar cells having 15% conversion efficiency at AM1 which meet the cell fabrication budget required for the DOE 1986 cost goal of $0.70 per peak watt in 1980.

Development of an all-metal thick film cost affective metallization system for solar cells

NASA Technical Reports Server (NTRS)

Ross, B.

1981-01-01

An economical thick film solar cell contact for high volume production of low cost silicon solar array modules was investigated. All metal screenable pastes using base metals were studied. Solar cells with junction depths varying by a factor of 3.3, with and without a deposited oxide coating were used. Cells were screened and fired by a two step firing process. Adhesion and metallurgical results are unsatisfactory. No electrical information is obtained due to inadequate contact adhesion.

Disordering of ultra thin WO3 films by high-energy ions

NASA Astrophysics Data System (ADS)

Matsunami, N.; Kato, M.; Sataka, M.; Okayasu, S.

2017-10-01

We have studied disordering or atomic structure modification of ultra thin WO3 films under impact of high-energy ions with non-equilibrium and equilibrium charge incidence, by means of X-ray diffraction (XRD). WO3 films were prepared by thermal oxidation of W deposited on MgO substrate. Film thickness obtained by Rutherford backscattering spectrometry (RBS) is as low as 2 nm. Smoothness of film surface was observed by atomic force microscopy. It is found that the ratio of XRD intensity degradation per 90 MeV Ni+10 ion (the incident charge is lower than the equilibrium charge) to that per 90 MeV Ni ion with the equilibrium charge depends on the film thickness. Also, film thickness dependence is observed for 100 MeV Xe+14. By comparison of the experimental result with a simple model calculation based on the assumption that the mean charge of ions along the depth follows a saturation curve with power-law approximation to the charge dependent electronic stopping power, the characteristic length attaining the equilibrium charge is obtained to be ∼7 nm for 90 MeV Ni+10 ion incidence or the electron loss cross section of ∼1016 cm2, demonstrating that disordering of ultra WO3 films has been observed and a fundamental quantity can be derived through material modification.

Effect of thickness on physical properties of electron beam vacuum evaporated CdZnTe thin films for tandem solar cells

NASA Astrophysics Data System (ADS)

Chander, Subhash; Dhaka, M. S.

2016-10-01

The thickness and physical properties of electron beam vacuum evaporated CdZnTe thin films have been optimized in the present work. The films of thickness 300 nm and 400 nm were deposited on ITO coated glass substrates and subjected to different characterization tools like X-ray diffraction (XRD), UV-Vis spectrophotometer, source meter and scanning electron microscopy (SEM) to investigate the structural, optical, electrical and surface morphological properties respectively. The XRD results show that the as-deposited CdZnTe thin films have zinc blende cubic structure and polycrystalline in nature with preferred orientation (111). Different structural parameters are also evaluated and discussed. The optical study reveals that the optical transition is found to be direct and energy band gap is decreased for higher thickness. The transmittance is found to increase with thickness and red shift observed which is suitable for CdZnTe films as an absorber layer in tandem solar cells. The current-voltage characteristics of deposited films show linear behavior in both forward and reverse directions as well as the conductivity is increased for higher film thickness. The SEM studies show that the as-deposited CdZnTe thin films are found to be homogeneous, uniform, small circle-shaped grains and free from crystal defects. The experimental results confirm that the film thickness plays an important role to optimize the physical properties of CdZnTe thin films for tandem solar cell applications as an absorber layer.

Development and Characterization of Edible Films Based on Fruit and Vegetable Residues.

PubMed

Andrade, Roberta M S; Ferreira, Mariana S L; Gonçalves, Édira C B A

2016-02-01

Edible films were developed from the solid residue of the processing of whole fruits and vegetables. The solid residue, processed into flour (FVR flour) was chemically and structurally characterized by microstructure, elemental composition, structural links, and moisture sorption isotherm. Films were prepared by casting using aqueous extracts of 8% and 10% of flour (w/w) and characterized in terms of thickness, water solubility, mechanical properties, water vapor permeability, and Fourier transform infrared (FTIR). The analysis of microstructure and elemental composition, performed on flour (mean particle size 350 μm), showed an essentially granular aspect, with the presence of fibrous particles having potassium as one of the most abundant elements. FTIR results showed similarity between the characteristic bands of other raw materials used in edible films. The sorption isotherm of FVR flour showed a typical profile of foods rich in soluble components, such as sugars. Dried films presented an average thickness of 0.263 ± 0.003 mm, a homogenous aspect, bright yellow color, pronounced fruit flavor, and high water solubility. The FTIR spectra of the edible films revealed that addition of potato skin flour did not change the molecular conformation. Moreover, the films presented low tensile strength at break when compared with fruit starch-based films. © 2016 Institute of Food Technologists®

Optimization Control of the Color-Coating Production Process for Model Uncertainty

PubMed Central

He, Dakuo; Wang, Zhengsong; Yang, Le; Mao, Zhizhong

2016-01-01

Optimized control of the color-coating production process (CCPP) aims at reducing production costs and improving economic efficiency while meeting quality requirements. However, because optimization control of the CCPP is hampered by model uncertainty, a strategy that considers model uncertainty is proposed. Previous work has introduced a mechanistic model of CCPP based on process analysis to simulate the actual production process and generate process data. The partial least squares method is then applied to develop predictive models of film thickness and economic efficiency. To manage the model uncertainty, the robust optimization approach is introduced to improve the feasibility of the optimized solution. Iterative learning control is then utilized to further refine the model uncertainty. The constrained film thickness is transformed into one of the tracked targets to overcome the drawback that traditional iterative learning control cannot address constraints. The goal setting of economic efficiency is updated continuously according to the film thickness setting until this reaches its desired value. Finally, fuzzy parameter adjustment is adopted to ensure that the economic efficiency and film thickness converge rapidly to their optimized values under the constraint conditions. The effectiveness of the proposed optimization control strategy is validated by simulation results. PMID:27247563

Optimization Control of the Color-Coating Production Process for Model Uncertainty.

PubMed

He, Dakuo; Wang, Zhengsong; Yang, Le; Mao, Zhizhong

2016-01-01

Optimized control of the color-coating production process (CCPP) aims at reducing production costs and improving economic efficiency while meeting quality requirements. However, because optimization control of the CCPP is hampered by model uncertainty, a strategy that considers model uncertainty is proposed. Previous work has introduced a mechanistic model of CCPP based on process analysis to simulate the actual production process and generate process data. The partial least squares method is then applied to develop predictive models of film thickness and economic efficiency. To manage the model uncertainty, the robust optimization approach is introduced to improve the feasibility of the optimized solution. Iterative learning control is then utilized to further refine the model uncertainty. The constrained film thickness is transformed into one of the tracked targets to overcome the drawback that traditional iterative learning control cannot address constraints. The goal setting of economic efficiency is updated continuously according to the film thickness setting until this reaches its desired value. Finally, fuzzy parameter adjustment is adopted to ensure that the economic efficiency and film thickness converge rapidly to their optimized values under the constraint conditions. The effectiveness of the proposed optimization control strategy is validated by simulation results.

Theoretical results for fully flooded, elliptical hydrodynamic contacts

NASA Technical Reports Server (NTRS)

Hamrock, B. J.; Dowson, D.

1982-01-01

The influence of the ellipticity parameter and the dimensionless speed, load, and materials parameters on minimum film thickness was investigated. The ellipticity parameter was varied from 1 (a ball-on-plate configuration) to 8 (a configuration approaching a line contact). The dimensionless speed parameter was varied over a range of nearly two orders of magnitude. Conditions corresponding to the use of solid materials of bronze, steel, and silicon nitride and lubricants of praffinic and naphthemic mineral oils were considered in obtaining the exponent in the dimensionless materials parameter. Thirty-four different cases were used in obtaining the minimum film thickness formula H min = 3.63U to the 0.68 power G to the 0.49 power W to the -0.073 power 1-e to the 0.68K power). A simplified expression for the ellipticity parameter was found where k = 1.03 (r(y)/r(x)) to the 0.64 power. Contour plots were also shown which indicate in detail the pressure spike and two side lobes in which the minimum film thickness occurs. These theoretical solutions of film thickness have all the essential features of the previously reported experimental observations based upon optical interferometry.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kalavagunta, C; Lin, M; Snider, J

Purpose: To quantify the factors leading to thermoplastic mask bolus-associated-increased skin dose in head and neck IMRT/VMAT using EBT2 film. Methods: EBT2 film placed beneath a dual layer 3-point ORFIT head, neck and shoulder mask was used to test the effect of mask thickness, beam modulation, air gap, and beam obliquity on bolus effect. Mask thickness was varied based on the distribution of 1.6mm Orfilight layer on top of 2 mm Efficast layer. Beam modulation was varied by irradiating the film with an open field (no beam modulation) and a step and shoot field (beam modulation). Air gap between maskmore » and film was varied from 0 to 5mm. Beam obliquity was varied by irradiating the film at gantry angles of 0°, 35°, and 70°.Finally, film strips placed on a Rando phantom under an Orfit mask, in regions of expected high dose, were irradiated using 5 IMRT and 5 VMAT plans with various modulation levels (modulation factor 2 to 5) and the results were compared with those obtained placing OSLDs at the same locations. Results: An 18–34% increase in mask bolus effect was observed for three factors where the effect of beam obliquity ≥ beam modulation > mask thickness. No increase in mask bolus effect was observed for change in air gap. A 6–13% increase in dose due to mask bolus effect was observed on film strips. Conclusion: This work underlines the role of beam obliquity and beam modulation combined with thermoplastic mask thickness in increasing mask bolus-associated skin dose in head and neck IMRT/VMAT. One possible method of dose reduction, based on knowledge gained from this work, is inclusion of skin as an avoidance structure in treatment planning. Another approach is to design a mask with the least amount of thermoplastic material necessary for immobilization.« less

Preparation of the spacer for narrow electrode gap configuration in ionization-based gas sensor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Saheed, Mohamed Shuaib Mohamed; Mohamed, Norani Muti; Burhanudin, Zainal Arif

2012-09-26

Carbon nanotubes (CNTs) have started to be developed as the sensing element for ionization-based gas sensors due to the demand for improved sensitivity, selectivity, stability and other sensing properties beyond what can be offered by the conventional ones. Although these limitations have been overcome, the problems still remain with the conventional ionization-based gas sensors in that they are bulky and operating with large breakdown voltage and high temperature. Recent studies have shown that the breakdown voltage can be reduced by using nanostructured electrodes and narrow electrode gap. Nanostructured electrode in the form of aligned CNTs array with evenly distributed nanotipsmore » can enhance the linear electric field significantly. The later is attributed to the shorter conductivity path through narrow electrode gap. The paper presents the study on the design consideration in order to realize ionization based gas sensor using aligned carbon nanotubes array in an optimum sensor configuration with narrow electrode gap. Several deposition techniques were studied to deposit the spacer, the key component that can control the electrode gap. Plasma spray deposition, electron beam deposition and dry oxidation method were employed to obtain minimum film thickness around 32 {mu}m. For plasma spray method, sand blasting process is required in order to produce rough surface for strong bonding of the deposited film onto the surface. Film thickness, typically about 39 {mu}m can be obtained. For the electron beam deposition and dry oxidation, the film thickness is in the range of nanometers and thus unsuitable to produce the spacer. The deposited multilayer film consisting of copper, alumina and ferum on which CNTs array will be grown was found to be removed during the etching process. This is attributed to the high etching rate on the thin film which can be prevented by reducing the rate and having a thicker conductive copper film.« less

Spin-wave wavelength down-conversion at thickness steps

NASA Astrophysics Data System (ADS)

Stigloher, Johannes; Taniguchi, Takuya; Madami, Marco; Decker, Martin; Körner, Helmut S.; Moriyama, Takahiro; Gubbiotti, Gianluca; Ono, Teruo; Back, Christian H.

2018-05-01

We report a systematic experimental study on the refraction and reflection of magnetostatic spin-waves at a thickness step between two Permalloy films of different thickness. The transmitted spin-waves for the transition from a thick film to a thin film have a higher wave vector compared to the incoming waves. Consequently, such systems may find use as passive wavelength transformers in magnonic networks. We investigate the spin-wave transmission behavior by studying the influence of the external magnetic field, incident angle, and thickness ratio of the films using time-resolved scanning Kerr microscopy and micro-focused Brillouin light scattering.

Controlling dielectric and relaxor-ferroelectric properties for energy storage by tuning Pb0.92La0.08Zr0.52Ti0.48O3 film thickness.

PubMed

Brown, Emery; Ma, Chunrui; Acharya, Jagaran; Ma, Beihai; Wu, Judy; Li, Jun

2014-12-24

The energy storage properties of Pb0.92La0.08Zr0.52Ti0.48O3 (PLZT) films grown via pulsed laser deposition were evaluated at variable film thickness of 125, 250, 500, and 1000 nm. These films show high dielectric permittivity up to ∼1200. Cyclic I-V measurements were used to evaluate the dielectric properties of these thin films, which not only provide the total electric displacement, but also separate contributions from each of the relevant components including electric conductivity (D1), dielectric capacitance (D2), and relaxor-ferroelectric domain switching polarization (P). The results show that, as the film thickness increases, the material transits from a linear dielectric to nonlinear relaxor-ferroelectric. While the energy storage per volume increases with the film thickness, the energy storage efficiency drops from ∼80% to ∼30%. The PLZT films can be optimized for different energy storage applications by tuning the film thickness to optimize between the linear and nonlinear dielectric properties and energy storage efficiency.

Controlling Dielectric and Relaxor-Ferroelectric Properties for Energy Storage by Tuning Pb 0.92La 0.08Zr 0.52Ti 0.48O 3 Film Thickness

DOE PAGES

Brown, Emery; Ma, Chunrui; Acharya, Jagaran; ...

2014-12-24

The energy storage properties of Pb 0.92La 0.08Zr 0.52Ti 0.48O 3 (PLZT) films grown via pulsed laser deposition were evaluated at variable film thickness of 125, 250, 500, and 1000 nm. These films show high dielectric permittivity up to ~1200. Cyclic I–V measurements were used to evaluate the dielectric properties of these thin films, which not only provide the total electric displacement, but also separate contributions from each of the relevant components including electric conductivity (D1), dielectric capacitance (D2), and relaxor-ferroelectric domain switching polarization (P). Our results show that, as the film thickness increases, the material transits from a linearmore » dielectric to nonlinear relaxor-ferroelectric. And while the energy storage per volume increases with the film thickness, the energy storage efficiency drops from ~80% to ~30%. The PLZT films can be optimized for different energy storage applications by tuning the film thickness to optimize between the linear and nonlinear dielectric properties and energy storage efficiency.« less

Impact of fluorine based reactive chemistry on structure and properties of high moment magnetic material

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang, Xiaoyu, E-mail: xiaoyu.yang@wdc.com; Chen, Lifan; Han, Hongmei

The impact of the fluorine-based reactive ion etch (RIE) process on the structural, electrical, and magnetic properties of NiFe and CoNiFe-plated materials was investigated. Several techniques, including X-ray fluorescence, 4-point-probe, BH looper, transmission electron microscopy (TEM), and electron energy loss spectroscopy (EELS), were utilized to characterize both bulk film properties such as thickness, average composition, Rs, ρ, Bs, Ms, and surface magnetic “dead” layers' properties such as thickness and element concentration. Experimental data showed that the majority of Rs and Bs changes of these bulk films were due to thickness reduction during exposure to the RIE process. ρ and Msmore » change after taking thickness reduction into account were negligible. The composition of the bulk films, which were not sensitive to surface magnetic dead layers with nano-meter scale, showed minimum change as well. It was found by TEM and EELS analysis that although both before and after RIE there were magnetic dead layers on the top surface of these materials, the thickness and element concentration of the layers were quite different. Prior to RIE, dead layer was actually native oxidation layers (about 2 nm thick), while after RIE dead layer consisted of two sub-layers that were about 6 nm thick in total. Sub-layer on the top was native oxidation layer, while the bottom layer was RIE “damaged” layer with very high fluorine concentration. Two in-situ RIE approaches were also proposed and tested to remove such damaged sub-layers.« less

Method for fabrication of crack-free ceramic dielectric films

DOEpatents

Ma, Beihai; Narayanan, Manoj; Balachandran, Uthamalingam; Chao, Sheng; Liu, Shanshan

2016-05-31

The invention provides a process for forming crack-free dielectric films on a substrate. The process comprises the application of a dielectric precursor layer of a thickness from about 0.3 .mu.m to about 1.0 .mu.m to a substrate. The deposition is followed by low temperature heat pretreatment, prepyrolysis, pyrolysis and crystallization step for each layer. The deposition, heat pretreatment, prepyrolysis, pyrolysis and crystallization are repeated until the dielectric film forms an overall thickness of from about 1.5 .mu.m to about 20.0 .mu.m and providing a final crystallization treatment to form a thick dielectric film. The process provides a thick crack-free dielectric film on a substrate, the dielectric forming a dense thick crack-free dielectric having an overall dielectric thickness of from about 1.5 .mu.m to about 20.0 .mu.m.

Method for fabrication of crack-free ceramic dielectric films

DOEpatents

Ma, Beihai; Balachandran, Uthamalingam; Chao, Sheng; Liu, Shanshan; Narayanan, Manoj

2014-02-11

The invention provides a process for forming crack-free dielectric films on a substrate. The process comprise the application of a dielectric precursor layer of a thickness from about 0.3 .mu.m to about 1.0 .mu.m to a substrate. The deposition is followed by low temperature heat pretreatment, prepyrolysis, pyrolysis and crystallization step for each layer. The deposition, heat pretreatment, prepyrolysis, pyrolysis and crystallization are repeated until the dielectric film forms an overall thickness of from about 1.5 .mu.m to about 20.0 .mu.m and providing a final crystallization treatment to form a thick dielectric film. Also provided was a thick crack-free dielectric film on a substrate, the dielectric forming a dense thick crack-free dielectric having an overall dielectric thickness of from about 1.5 .mu.m to about 20.0 .mu.m.

Electrospray Deposition of Uniform Thickness Ge23Sb7S70 and As40S60 Chalcogenide Glass Films.

PubMed

Novak, Spencer; Lin, Pao-Tai; Li, Cheng; Borodinov, Nikolay; Han, Zhaohong; Monmeyran, Corentin; Patel, Neil; Du, Qingyang; Malinowski, Marcin; Fathpour, Sasan; Lumdee, Chatdanai; Xu, Chi; Kik, Pieter G; Deng, Weiwei; Hu, Juejun; Agarwal, Anuradha; Luzinov, Igor; Richardson, Kathleen

2016-08-19

Solution-based electrospray film deposition, which is compatible with continuous, roll-to-roll processing, is applied to chalcogenide glasses. Two chalcogenide compositions are demonstrated: Ge23Sb7S70 and As40S60, which have both been studied extensively for planar mid-infrared (mid-IR) microphotonic devices. In this approach, uniform thickness films are fabricated through the use of computer numerical controlled (CNC) motion. Chalcogenide glass (ChG) is written over the substrate by a single nozzle along a serpentine path. Films were subjected to a series of heat treatments between 100 °C and 200 °C under vacuum to drive off residual solvent and densify the films. Based on transmission Fourier transform infrared (FTIR) spectroscopy and surface roughness measurements, both compositions were found to be suitable for the fabrication of planar devices operating in the mid-IR region. Residual solvent removal was found to be much quicker for the As40S60 film as compared to Ge23Sb7S70. Based on the advantages of electrospray, direct printing of a gradient refractive index (GRIN) mid-IR transparent coating is envisioned, given the difference in refractive index of the two compositions in this study.

Nanometer-Thick Yttrium Iron Garnet Film Development and Spintronics-Related Study

NASA Astrophysics Data System (ADS)

Chang, Houchen

In the last decade, there has been a considerable interest in using yttrium iron garnet (Y3Fe5O12, YIG) materials for magnetic insulator-based spintronics studies. This interest derives from the fact that YIG materials have very low intrinsic damping. The development of YIG-based spintronics demands YIG films that have a thickness in the nanometer (nm) range and at the same time exhibit low damping similar to single-crystal YIG bulk materials. This dissertation reports comprehensive experimental studies on nm-thick YIG films by magnetron sputtering techniques. Optimization of sputtering control parameters and post-deposition annealing processes are discussed in detail. The feasibility of low-damping YIG nm-thick film growth via sputtering is demonstrated. A 22.3-nm-thick YIG film, for example, shows a Gilbert damping constant of less than 1.0 x 10-4. The demonstration is of great technological significance because sputtering is a thin film growth technique most widely used in industry. The spin Seebeck effect (SSE) refers to the generation of spin voltage in a ferromagnet (FM) due to a temperature gradient. The spin voltage can produce a pure spin current into a normal metal (NM) that is in contact with the FM. Various theoretical models have been proposed to interpret the SSE, although a complete understanding of the effect has not been realized yet. In this dissertation the study of the role of damping on the SSE in YIG thin films is conducted for the first time. With the thin film development method mentioned in the last paragraph, a series of YIG thin films showing very similar structural and static magnetic properties but rather different Gilbert damping values were prepared. A Pt capping layer was grown on each YIG film to probe the strength of the SSE. The experimental data show that the YIG films with a smaller intrinsic Gilbert damping shows a stronger SSE. The majority of the previous studies on YIG spintronics utilized YIG films that were grown on single-crystal Gd3Ga5O 12 (GGG) substrates first and then capped with either a thin NM layer or a thin topological insulator (TI) layer. The use of the GGG substrates is crucial in terms of realizing high-quality YIG films, because GGG not only has a crystalline structure almost perfectly matching that of YIG but is also extremely stable at high temperature in oxygen that is the condition needed for YIG crystallization. The feasibility of growing high-quality YIG thin films on Pt thin films is explored in this dissertation. This work is of great significance because it enables the fabrication of sandwich-like NM/YIG/NM or NM/YIG/TI structures. Such tri-layered structures will facilitate various interesting fundamental studies as well as device developments. The demonstration of a magnon-mediated electric current drag phenomenon is presented as an example for such tri-layered structures.

Facile, substrate-scale growth of mono- and few-layer homogeneous MoS2 films on Mo foils with enhanced catalytic activity as counter electrodes in DSSCs.

PubMed

Antonelou, Aspasia; Syrrokostas, George; Sygellou, Lamprini; Leftheriotis, George; Dracopoulos, Vassileios; Yannopoulos, Spyros N

2016-01-29

The growth of MoS2 films by sulfurization of Mo foils at atmospheric pressure is reported. The growth procedure provides, in a controlled way, mono- and few-layer thick MoS2 films with substrate-scale uniformity across square-centimeter area on commercial foils without any pre- or post-treatment. The prepared few-layer MoS2 films are investigated as counter electrodes for dye-sensitized solar cells (DSSCs) by assessing their ability to catalyse the reduction of I3(-) to I(-) in triiodide redox shuttles. The dependence of the MoS2 catalytic activity on the number of monolayers is explored down to the bilayer thickness, showing performance similar to that of, and stability against corrosion better than, Pt-based nanostructured film. The DSSC with the MoS2-Mo counter electrode yields a photovoltaic energy conversion efficiency of 8.4%, very close to that of the Pt-FTO-based DSSC, i.e. 8.7%. The current results disclose a facile, cost-effective and green method for the fabrication of mechanically robust and chemically stable, few-layer MoS2 on flexible Mo substrates and further demonstrate that efficient counter electrodes for DSSCs can be prepared at thicknesses down to the 1-2 nm scale.

Zeolite-based Impedimetric Gas Sensor Device in Low-cost Technology for Hydrocarbon Gas Detection

PubMed Central

Reiß, Sebastian; Hagen, Gunter; Moos, Ralf

2008-01-01

Due to increasing environmental concerns the need for inexpensive selective gas sensors is increasing. This work deals with transferring a novel zeolite-based impedimetric hydrocarbon gas sensor principle, which has been originally manufactured in a costly combination of photolithography, thin-film processes, and thick-film processes to a low-cost technology comprising only thick-film processes and one electroplating step. The sensing effect is based on a thin chromium oxide layer between the interdigital electrodes and a Pt-loaded ZSM-5 zeolite film. When hydrocarbons are present in the sensor ambient, the electrical sensor impedance increases strongly and selectively. In the present work, the chromium oxide film is electroplated on Au screen-printed interdigital electrodes and then oxidized to Cr2O3. The electrode area is covered with the screen-printed zeolite. The sensor device is self-heated utilizing a planar platinum heater on the backside. The best sensor performance is obtained at a frequency of 3 Hz at around 350 °C. The good selectivity of the original sensor setup could be confirmed, but a strong cross-sensitivity to ammonia occurs, which might prohibit its original intention for use in automotive exhausts. PMID:27873966

Thickness dependent optical properties of PEMA and (PEMA){sub 0.85}/(ZnO){sub 0.15} nanocomposite films deposited by spray pyrolysis technique on ITO substrate

DOE Office of Scientific and Technical Information (OSTI.GOV)

Thakur, Anjna, E-mail: anjna56@gmail.com; Thakur, Priya; Yadav, Kamlesh, E-mail: kamlesh.yadav001@gmail.com

2016-05-06

In this paper, poly (ethyl methacrylate) (PEMA) and (PEMA){sub 0.85}/(ZnO){sub 0.15} nanocomposite films for 2, 3, 4 and 5 minutes have been deposited by spray pyrolysis technique on indium tin oxide (ITO) coated substrate. The effect of thickness of the film on the morphological and optical properties of PEMA and (PEMA){sub 0.85}/(ZnO){sub 0.15} nanocomposite films are studied. The morphological and optical properties of pure PEMA and (PEMA){sub 0.85}/(ZnO){sub 0.15} nanocomposite films are compared. The field emission scanning electron microscopy (FESEM) shows that as the thickness of film increases, uniformity of films increases. It is found from UV-Visible spectra that themore » energy band gap decreases with increasing the deposition time and refractive index increases with increasing the thickness of the film. The band gap of the nanocomposites is found less than the pure polymer film and opposite trend is observed for refractive index. The optical absorption of PEMA/ZnO nanocomposite films is higher than pure PEMA film. The thickness of the nanocomposite film plays a significant role in the tunability of the optical properties.« less

Ellipsometric measurement of liquid film thickness

NASA Technical Reports Server (NTRS)

Chang, Ki Joon; Frazier, D. O.

1989-01-01

The immediate objective of this research is to measure liquid film thickness from the two equilibrium phases of a monotectic system in order to estimate the film pressure of each phase. Thus liquid film thicknesses on the inside walls of the prism cell above the liquid level have been measured elliposmetrically for the monotectic system of succinonitrile and water. The thickness varies with temperature and composition of each plane. The preliminary results from both layers at 60 deg angle of incidence show nearly uniform thickness from about 21 to 23 C. The thickness increases with temperature but near 30 C the film appears foggy and scatters the laser beam. As the temperature of the cell is raised beyond room temperature it becomes increasingly difficult to equalize the temperature inside and outside the cell. The fogging may also be an indication that solution, not pure water, is adsorbed onto the substrate. Nevertheless, preliminary results suggest that ellipsometric measurement is feasible and necessary to measure more accurately and rapidly the film thickness and to improve thermal control of the prism walls.

Evolution of structural distortion in BiFeO3 thin films probed by second-harmonic generation

NASA Astrophysics Data System (ADS)

Jin, Kuijuan; Wang, Jiesu; Gu, Junxing; L03 Group in Institute of Physics, Chinese Academy of Sciences Team

BiFeO3 thin films have drawn much attention due to its potential applications for novel magnetoelectric devices and fundamental physics in magnetoelectric coupling. However, the structural evolution of BiFeO3 films with thickness remains controversial. Here we use an optical second-harmonic generation technique to explore the phase-related symmetry evolution of BiFeO3 thin films with the variation of thickness. The crystalline structures for 60 and 180-nm-thick BiFeO3 thin films were characterized by high-resolution X-ray diffractometry reciprocal space mapping and the local piezoelectric response for 60-nm-thick BiFeO3 thin films was characterized by piezoresponse force microscopy. The present results show that the symmetry of BiFeO3 thin films with a thickness below 60 nm belongs to the point group 4mm. We conclude that the disappearance of fourfold rotational symmetry in SHG s-out pattern implies for the appearance of R-phase. The fact that the thinner the film is, the closer to 1 the tensor element ratio χ31/ χ15 tends, indicates an increase of symmetry with the decrease of thickness for BiFeO3 thin films. email: kjjin@iphy.ac.cn

Evolution of structural distortion in BiFeO3 thin films probed by second-harmonic generation.

PubMed

Wang, Jie-Su; Jin, Kui-Juan; Guo, Hai-Zhong; Gu, Jun-Xing; Wan, Qian; He, Xu; Li, Xiao-Long; Xu, Xiu-Lai; Yang, Guo-Zhen

2016-12-01

BiFeO 3 thin films have drawn much attention due to its potential applications for novel magnetoelectric devices and fundamental physics in magnetoelectric coupling. However, the structural evolution of BiFeO 3 films with thickness remains controversial. Here we use an optical second-harmonic generation technique to explore the phase-related symmetry evolution of BiFeO 3 thin films with the variation of thickness. The crystalline structures for 60 and 180-nm-thick BiFeO 3 thin films were characterized by high-resolution X-ray diffractometry reciprocal space mapping and the local piezoelectric response for 60-nm-thick BiFeO 3 thin films was characterized by piezoresponse force microscopy. The present results show that the symmetry of BiFeO 3 thin films with a thickness below 60 nm belongs to the point group 4 mm. We conclude that the disappearance of fourfold rotational symmetry in SHG s-out pattern implies for the appearance of R-phase. The fact that the thinner the film is, the closer to 1 the tensor element ratio χ 31 /χ 15 tends, indicates an increase of symmetry with the decrease of thickness for BiFeO 3 thin films.

Evolution of structural distortion in BiFeO3 thin films probed by second-harmonic generation

PubMed Central

Wang, Jie-su; Jin, Kui-juan; Guo, Hai-zhong; Gu, Jun-xing; Wan, Qian; He, Xu; Li, Xiao-long; Xu, Xiu-lai; Yang, Guo-zhen

2016-01-01

BiFeO3 thin films have drawn much attention due to its potential applications for novel magnetoelectric devices and fundamental physics in magnetoelectric coupling. However, the structural evolution of BiFeO3 films with thickness remains controversial. Here we use an optical second-harmonic generation technique to explore the phase-related symmetry evolution of BiFeO3 thin films with the variation of thickness. The crystalline structures for 60 and 180-nm-thick BiFeO3 thin films were characterized by high-resolution X-ray diffractometry reciprocal space mapping and the local piezoelectric response for 60-nm-thick BiFeO3 thin films was characterized by piezoresponse force microscopy. The present results show that the symmetry of BiFeO3 thin films with a thickness below 60 nm belongs to the point group 4 mm. We conclude that the disappearance of fourfold rotational symmetry in SHG s-out pattern implies for the appearance of R-phase. The fact that the thinner the film is, the closer to 1 the tensor element ratio χ31/χ15 tends, indicates an increase of symmetry with the decrease of thickness for BiFeO3 thin films. PMID:27905565

Evaluation of dip and spray coating techniques in corrosion inhibition of AA2024 alloy using a silicon/zirconium sol-gel film as coating

NASA Astrophysics Data System (ADS)

Garcia, R. B. R.; Silva, F. S.; Kawachi, E. Y.

2017-02-01

For corrosion protection of aluminum alloy AA2024 -T3 a silicon/zirconium films were obtained via sol-gel process, prepared from tetraethoxysilane and zirconium acetate, in acid medium with a 5 wt% of nonionic surfactant in order to replace the pre-treatment based on chromium conversion coatings. A homogeneous film was obtained and deposited, at low viscosity condition of the sol (˜10cP), by dip and spray coating techniques. The films morphology was evaluated by Scanning Electron Microscopy (SEM), and to know more about the used deposition methodology, the deposited mass and the film thickness were measured. The corrosion protection efficiency of deposited films was evaluated by potentiodynamic polarization. The film deposition by both dip and spray coatings were effective for the deposition of a homogeneous film layer, and the results showed the thickness is directly related with the deposited mass, and the film deposited by spray technique presented the lower value. Potentiodynamic polarization indicated that the film deposited by spray coating apparently has a better inert ceramic film due the polarization resistance increased around 57% against 27 and 14% of dip coating samples (4 and 1 layer, respectively).

Suppressing hillock formation in Si-supported pure Al films

NASA Astrophysics Data System (ADS)

Liu, N. Z.; Liu, Y.

2018-04-01

To suppress the hillock formation and hence improve the service performance of pure Al thin films deposited on Si substrate, dependence of hillock formation on film thickness and annealing temperature was systematically investigated. Experimental results revealed that the hillock volume increased linearly with both the film thickness and annealing temperature. While the evolution of hillock density with film thickness was complicated, strongly depending on the annealing temperature. It was evident that the hillock formation could be effectively suppressed at a critical annealing temperature especially in thinner thickness, similar to the previous findings in Mo/glass-supported pure Al films. These experimental evidences clearly demonstrated that the hillock formation should be controlled by the plastic deformation in the surrounding film, which was further rationalized by a micromechanics model.

Electrical resistivity of CuAlMo thin films grown at room temperature by dc magnetron sputtering

NASA Astrophysics Data System (ADS)

Birkett, Martin; Penlington, Roger

2016-07-01

We report on the thickness dependence of electrical resistivity of CuAlMo films grown by dc magnetron sputtering on glass substrates at room temperature. The electrical resistance of the films was monitored in situ during their growth in the thickness range 10-1000 nm. By theoretically modelling the evolution of resistivity during growth we were able to gain an insight into the dominant electrical conduction mechanisms with increasing film thickness. For thicknesses in the range 10-25 nm the electrical resistivity is found to be a function of the film surface roughness and is well described by Namba’s model. For thicknesses of 25-40 nm the experimental data was most accurately fitted using the Mayadas and Shatkes model which accounts for grain boundary scattering of the conduction electrons. Beyond 40 nm, the thickness of the film was found to be the controlling factor and the Fuchs-Sonheimer (FS) model was used to fit the experimental data, with diffuse scattering of the conduction electrons at the two film surfaces. By combining the Fuchs and Namba (FN) models a suitable correlation between theoretical and experimental resistivity can be achieved across the full CuAlMo film thickness range of 10-1000 nm. The irreversibility of resistance for films of thickness >200 nm, which demonstrated bulk conductivity, was measured to be less than 0.03% following subjection to temperature cycles of -55 and +125 °C and the temperature co-efficient of resistance was less than ±15 ppm °C-1.

Spatial and thickness dependence of coupling interaction of surface states and influence on transport and optical properties of few-layer Bi2Se3

NASA Astrophysics Data System (ADS)

Li, Zhongjun; Chen, Shi; Sun, Jiuyu; Li, Xingxing; Qiu, Huaili; Yang, Jinlong

2018-02-01

Coupling interaction between the bottom and top surface electronic states and the influence on transport and optical properties of Bi2Se3 thin films with 1-8 quintuple layers (QLs) have been investigated by first principles calculations. Obvious spatial and thickness dependences of coupling interaction are found by analyzing hybridization of two surface states. In the thin film with a certain thickness, from the outer to inner atomic layers, the coupling interaction exhibits an increasing trend. On the other hand, as thickness increases, the coupling interaction shows a disproportionate decrease trend. Moreover, the system with 3 QLs exhibits stronger interaction than that with 2 QLs. The presence of coupling interaction would suppress destructive interference of surface states and enhance resistance in various degrees. In view of the inversely proportional relation to transport channel width, the resistance of thin films should show disproportionate thickness dependence. This prediction is qualitatively consistent with the transport measurements at low temperature. Furthermore, the optical properties also exhibit obvious thickness dependence. Especially as the thickness increases, the coupling interaction results in red and blue shifts of the multiple-peak structures in low and high energy regions of imaginary dielectric function, respectively. The red shift trend is in agreement with the recent experimental observation and the blue shift is firstly predicted by the present calculation. The present results give a concrete understanding of transport and optical properties in devices based on Bi2Se3 thin films with few QLs.

Strongly Enhanced Piezoelectric Response in Lead Zirconate Titanate Films with Vertically Aligned Columnar Grains.

PubMed

Nguyen, Minh D; Houwman, Evert P; Dekkers, Matthijn; Rijnders, Guus

2017-03-22

Pb(Zr 0.52 Ti 0.48 )O 3 (PZT) films with (001) orientation were deposited on Pt(111)/Ti/SiO 2 /Si(100) substrates using pulsed laser deposition. Variation of the laser pulse rate during the deposition of the PZT films was found to play a key role in the control of the microstructure and to change strongly the piezoelectric response of the thin film. The film deposited at low pulse rate has a denser columnar microstructure, which improves the transverse piezoelectric coefficient (d 31f ) and ferroelectric remanent polarization (P r ), whereas the less densely packed columnar grains in the film deposited at high pulse rates give rise to a significantly higher longitudinal piezoelectric coefficient (d 33f ) value. The effect of film thickness on the ferroelectric and piezoelectric properties of the PZT films was also investigated. With increasing film thickness, the grain column diameter gradually increases, and also the average P r and d 33f values become larger. The largest piezoelectric coefficient of d 33f = 408 pm V -1 was found for a 4-μm film thickness. From a series of films in the thickness range 0.5-5 μm, the z-position dependence of the piezoelectric coefficient could be deduced. A local maximum value of 600 pm V -1 was deduced in the 3.5-4.5 μm section of the thickest films. The dependence of the film properties on film thickness is attributed to the decreasing effect of the clamping constraint imposed by the substrate and the increasing spatial separation between the grains with increasing film thickness.

Strongly Enhanced Piezoelectric Response in Lead Zirconate Titanate Films with Vertically Aligned Columnar Grains

PubMed Central

2017-01-01

Pb(Zr0.52Ti0.48)O3 (PZT) films with (001) orientation were deposited on Pt(111)/Ti/SiO2/Si(100) substrates using pulsed laser deposition. Variation of the laser pulse rate during the deposition of the PZT films was found to play a key role in the control of the microstructure and to change strongly the piezoelectric response of the thin film. The film deposited at low pulse rate has a denser columnar microstructure, which improves the transverse piezoelectric coefficient (d31f) and ferroelectric remanent polarization (Pr), whereas the less densely packed columnar grains in the film deposited at high pulse rates give rise to a significantly higher longitudinal piezoelectric coefficient (d33f) value. The effect of film thickness on the ferroelectric and piezoelectric properties of the PZT films was also investigated. With increasing film thickness, the grain column diameter gradually increases, and also the average Pr and d33f values become larger. The largest piezoelectric coefficient of d33f = 408 pm V–1 was found for a 4-μm film thickness. From a series of films in the thickness range 0.5–5 μm, the z-position dependence of the piezoelectric coefficient could be deduced. A local maximum value of 600 pm V–1 was deduced in the 3.5–4.5 μm section of the thickest films. The dependence of the film properties on film thickness is attributed to the decreasing effect of the clamping constraint imposed by the substrate and the increasing spatial separation between the grains with increasing film thickness. PMID:28247756

Drop impact on thin liquid films using TIRM

NASA Astrophysics Data System (ADS)

Pack, Min; Ying Sun Team

2015-11-01

Drop impact on thin liquid films is relevant to a number of industrial processes such as pesticide spraying and repellent surface research such as self-cleaning applications. In this study, we systematically investigate the drop impact dynamics on thin liquid films on plain glass substrates by varying the film thickness, viscosity and impact velocity. High speed imaging is used to track the droplet morphology and trajectory over time as well as observing instability developments at high Weber number impacts. Moreover, the air layer between the drop and thin film upon drop impact is probed by total internal reflection microscopy (TIRM) where the grayscale intensity is used to measure the air layer thickness and spreading radius over time. For low We impact on thick films (We ~ 10), the effect of the air entrainment is pronounced where the adhesion of the droplet to the wall is delayed by the air depletion and liquid film drainage, whereas for high We impact (We >100) the air layer is no longer formed and instead, the drop contact with the wall is limited only to the film drainage for all film thicknesses. In addition, the maximum spreading radius of the droplet is analyzed for varying thin film thickness and viscosity.

Micropatterning of TiO2 thin films by MOCVD and study of their growth tendency.

PubMed

Hwang, Ki-Hwan; Kang, Byung-Chang; Jung, Duk Young; Kim, Youn Jea; Boo, Jin-Hyo

2015-03-23

In this work, we studied the growth tendency of TiO2 thin films deposited on a narrow-stripe area (<10 μm). TiO2 thin films were selectively deposited on OTS patterned Si(100) substrates by MOCVD. The experimental data showed that the film growth tendency was divided into two behaviors above and below a line patterning width of 4 μm. The relationship between the film thickness and the deposited area was obtained as a function of f(x) = a[1 - e((-bx))]c. To find the tendency of the deposition rate of the TiO2 thin films onto the various linewidth areas, the relationship between the thickness of the TiO2 thin film and deposited linewidth was also studied. The thickness of the deposited TiO2 films was measured from the alpha-step profile analyses and cross-sectional SEM images. At the same time, a computer simulation was carried out to reveal the relationship between the TiO2 film thickness and deposited line width. The theoretical results suggest that the mass (velocity) flux in flow direction is directly affected to the film thickness.

Effective dilution of surfactants due to thinning of the soap film

NASA Astrophysics Data System (ADS)

Sane, Aakash; Mandre, Shreyas; Kim, Ildoo

2017-11-01

A flowing soap film is a system whose hydrodynamic properties can be affected by its thickness. Despite abundant experiments performed using soap films, few have examined the dependence of its physical as well as chemical properties with respect to its thickness. We investigate one such property - surface tension of the flowing film and delineate its dependence on the concentration of the soap solution and flow rate per unit width i.e. thickness of the soap film. Using our proposed method to measure the average surface tension in-situ over the whole soap film, we show that the surface tension increases by reducing the thickness of the film and by reducing the concentration of the soap solution. Our data suggests that thinning of the soap film is effectively diluting the solution. Thinning increases the adsorption of surfactants to the surfaces, but it decreases the total number of molecules per unit area. Our work brings new insight into the physics of soap films and we believe that this effective dilution due to thinning is a signature of the flowing soap films, whose surface concentration of surfactants is affected by the thickness.

Variable angle spectroscopic ellipsometric characterization of HfO2 thin film

NASA Astrophysics Data System (ADS)

Kumar, M.; Kumari, N.; Karar, V.; Sharma, A. L.

2018-02-01

Hafnium Oxide film was deposited on BK7 glass substrate using reactive oxygenated E-Beam deposition technique. The film was deposited using in-situ quartz crystal thickness monitoring to control the film thickness and rate of evaporation. The thin film was grown with a rate of deposition of 0.3 nm/s. The coated substrate was optically characterized using spectrophotometer to determine its transmission spectra. The optical constants as well as film thickness of the hafnia film were extracted by variable angle spectroscopic ellipsometry with Cauchy fitting at incidence angles of 65˚, 70˚ and 75˚.

The role of long-range forces in the formation of thin liquid films on metals

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gyory, J.R.; Muller, R.H.

1987-06-01

White-light multiple beam interference is used to study the drainage of aqueous electrolytes from vertically optically smooth platinum and gold plates. Bulk liquid is in contact with the bottom of the metal plate. For short times following the lowering of the bulk liquid level, the change in the film profile agrees with that expected from viscous drainage. However, at long times, the film profile deviates from that expected and eventually becomes independent of time at a thickness between 0.08 and 0.25 micrometers. These profiles are best represented by a function dependent on the inverse cube root of height. The thicknessmore » of the equilibrium film profiles with increasing electrolyte concentration. A model based on long range van der Waals interactions resulting in a repulsive force between the interfaces of the film is shown to predict the correct profile shape, and for dilute electrolytes, the correct film thickness. This model also predicts increasing film thickness for increasing electrolyte concentration. The strength of this interaction is characterized by the Hamaker constant which can be calculated from the dielectric functions evaluated at imaginary frequencies of the film and substrate. For metals, this function is generated from spectral absorption data, limiting behavior for low and high frequencies, and by use of the Kramers-Kronig transformation. Hamaker constants calculated from the dielectric functions generated in this manner agree well with those derived from film profiles for dilute electrolytes.« less

The Effect of Thickness of ZnO Thin Films on Hydrophobic Self-Cleaning Properties

NASA Astrophysics Data System (ADS)

Mufti, N.; Arista, D.; Diantoro, M.; Fuad, A.; Taufiq, A.; Sunaryono

2017-05-01

Glass coating can be conducted by using ZnO-photocatalyst based semiconductor material since it is preeminent in decomposing organics compound and dangerous bacteria which often contaminates the environment. If there are dirt containing organics compound on the glass, the ZnO photocatalyst coat can be applied as self-cleaning, usually called self-cleaning glass. It depends on the coating thickness which can be controlled by setting the speed of spin coating. In this research, the various rotating speeds of spin coating were conducted at 2000 rpm, 3000 rpm, and 4000 rpm to control the thickness. The raw materials used in this research were Zn(CH3COOH)2.2H2O (PA 99,5%), Ethylene glycol, Diethanolamine (PA 99%), Isopropanol Alkohol, Glycerol, and Ashton. Synthesis methods used were sol-gel prior to spin coating technic were applied. The results of the film were characterized by using SEM, XRD, and UV-Spectrophotometer. The crystal structure was analyzed by using Highscore plus and GSAS software, the size crystal was calculated by using Scherrer equation, a contact angle with ImageJ software. It was shown that ZnO thin film had been successfully synthesized with the crystal size around 21 nm up to 26 nm. The absorption value is higher due to the increasing of coat thickness with bandgap ± 3.2 eV. The test result of hydrophobic and hydrophilic characteristics show that all samples of ZnO thin film with the thickness ± 1.050 μm, ± 0.450 μm, ± 0.250 μm can be applied as self-cleaning glass. The best result was gained with the thickness of thin film ± 1.050 μm.

Elastohydrodynamic lubrication of elliptical contacts

NASA Technical Reports Server (NTRS)

Hamrock, B. J.

1981-01-01

The determination of the minimum film thickness within contact is considered for both fully flooded and starved conditions. A fully flooded conjunction is one in which the film thickness is not significantly changed when the amount of lubricant is increased. The fully flooded results presented show the influence of contact geometry on minimum film thickness as expressed by the ellipticity parameter and the dimensionless speed, load, and materials parameters. These results are applied to materials of high elastic modulus (hard EHL), such as metal, and to materials of low elastic modulus(soft EHL), such as rubber. In addition to the film thickness equations that are developed, contour plots of pressure and film thickness are given which show the essential features of elastohydrodynamically lubricated conjunctions. The crescent shaped region of minimum film thickness, with its side lobes in which the separation between the solids is a minimum, clearly emerges in the numerical solutions. In addition to the 3 presented for the fully flooded results, 15 more cases are used for hard EHL contacts and 18 cases are used for soft EHL contacts in a theoretical study of the influence of lubricant starvation on film thickness and pressure. From the starved results for both hard and soft EHL contacts, a simple and important dimensionless inlet boundary distance is specified. This inlet boundary distance defines whether a fully flooded or a starved condition exists in the contact. Contour plots of pressure and film thickness in and around the contact are shown for conditions.

Influence of cement film thickness on the retention of implant-retained crowns.

PubMed

Mehl, Christian; Harder, Sönke; Steiner, Martin; Vollrath, Oliver; Kern, Matthias

2013-12-01

The main goal of this study was to establish a new, high precision procedure to evaluate the influence of cement film thickness on the retention of cemented implant-retained crowns. Ninety-six tapered titanium abutments (6° taper, 4.3 mm diameter, Camlog) were shortened to 4 mm. Computer-aided design was used to design the crowns, and selective laser sintering, using a cobalt-chromium alloy, was used to produce the crowns. This method used a focused high-energy laser beam to fuse a localized region of metal powder to build up the crowns gradually. Before cementing, preset cement film thicknesses of 15, 50, 80, or 110 μm were established. Glass ionomer, polycarboxylate, or resin cements were used for cementation. After 3 days storage in demineralized water, the retention of the crowns was measured in tension using a universal testing machine. The cement film thicknesses could be achieved with a high level of precision. Interactions between the factors cement and cement film thickness could be found (p ≤ 0.001). For all cements, crown retention decreased significantly between a cement film thickness of 15 and 50 μm (p ≤ 0.001). At 15 μm cement film thickness, the resin cement was the most retentive cement, followed by the polycarboxylate and then the glass ionomer cement (p ≤ 0.05). The results suggest that cement film thickness has an influence on the retentive strength of cemented implant-retained crowns. © 2013 by the American College of Prosthodontists.

Geometry and starvation effects in hydrodynamic lubrication

NASA Technical Reports Server (NTRS)

Brewe, D.; Hamrock, B. J.

1982-01-01

Numerical methods were used to detemine the effects of lubricant starvation on the minimum film thickness under conditions of a hydrodynamic point contact. Starvation was effected by varying the fluid inlet level. The Reynolds boundary conditions were applied at the cavitation boundary and zero pressure was stipulated at the meniscus or inlet boundary. A minimum film thickness equation as a function of both the ratio of dimensionless load to dimensionless speed and inlet supply level was determined. By comparing the film generated under the starved inlet condition with the film generated from the fully flooded inlet, an expression for the film reduction factor was obtained. Based on this factor a starvation threshold was defined as well as a critically starved inlet. The changes in the inlet pressure buildup due to changing the available lubricant supply are presented in the form of three dimensional isometric plots and also in the form of contour plots.

Dynamic film thickness between bubbles and wall in a narrow channel

NASA Astrophysics Data System (ADS)

Ito, Daisuke; Damsohn, Manuel; Prasser, Horst-Michael; Aritomi, Masanori

2011-09-01

The present paper describes a novel technique to characterize the behavior of the liquid film between gas bubbles and the wall in a narrow channel. The method is based on the electrical conductance. Two liquid film sensors are installed on both opposite walls in a narrow rectangular channel. The liquid film thickness underneath the gas bubbles is recorded by the first sensor, while the void fraction information is obtained by measuring the conductance between the pair of opposite sensors. Both measurements are taken on a large two-dimensional domain and with a high speed. This makes it possible to obtain the two-dimensional distribution of the dynamic liquid film between the bubbles and the wall. In this study, this method was applied to an air-water flow ranging from bubbly to churn regimes in the narrow channel with a gap width of 1.5 mm.

Geometry and starvation effects in hydrodynamic lubrication

NASA Technical Reports Server (NTRS)

Brewe, D. E.; Hamrock, B. J.

1982-01-01

Numerical methods were used to determine the effects of lubricant starvation on the minimum film thickness under conditions of a hydrodynamic point contact. Starvation was effected by varying the fluid inlet level. The Reynolds boundary conditions were applied at the cavitation boundary and zero pressure was stipulated at the meniscus or inlet boundary. A minimum-film-thickness equation as a function of both the ratio of dimensionless load to dimensionless speed and inlet supply level was determined. By comparing the film generated under the starved inlet condition with the film generated from the fully flooded inlet, an expression for the film reduction factor was obtained. Based on this factor a starvation threshold was defined as well as a critically starved inlet. The changes in the inlet pressure buildup due to changing the available lubricant supply are presented in the form of three dimensional isometric plots and also in the form of contour plots.

Optical and Thermo-optical Properties of Polyimide-Single-Walled Carbon Nanotube Films: Experimental Results and Empirical Equations

NASA Technical Reports Server (NTRS)

Smith, Joseph G., Jr.; Connell, John W.; Watson, Kent A.; Danehy, Paul M.

2005-01-01

The incorporation of single-walled carbon nanotubes (SWNTs) into the bulk of space environmentally durable polymers at loading levels greater than or equal to 0.05 wt % has afforded thin films with surface and volume resistivities sufficient for electrostatic charge mitigation. However, the optical transparency at 500 nm decreased and the thermo-optical properties (solar absorptivity and thermal emissivity) increased with increaed SWNT loading. These properties were also dependent on film thickness. The absorbance characteristics of the films as a function of SWNT loading and film thickness were measured and determined to follow the classical Beer-Lambert law. Based on these results, an empirical relationship was derived and molar absorptivities determined for both the SWNTs and polymer matrix to provide a predictive approximation of these properties. The molar absorptivity determined for SWNTs dispersed in the polymer was comparable to reported solution determined values for HiPco SWNTs.

Stresses in chemical vapor deposited epitaxial 3C-SiC membranes

NASA Astrophysics Data System (ADS)

Su, C. M.; Fekade, A.; Spencer, M.; Wuttig, Manfred

1995-02-01

The internal stresses in chemical-vapor-deposited 3C-SiC films were studied by a vibrating membrane technique. The differential thermal expansivity of 3C-SiC films was investigated by the change of the internal stress as a function of temperature. It was found that the internal stress of the films is dominated by thermal stresses and its magnitude depends both on doping and the film thickness. While p doping substantially increases the stress, increasing the film thickness reduces the stress of the SiC layer. The thermal expansivity of the SiC layer shows a lower value which is significantly less than of bulk 3C-SiC and tends to approach the expansivity of the Si substrate. It is proposed that the stress dependence of the SiC films on doping and film thickness is the result of the film morphology which is heavily faulted for very thin films and more perfect as the film thickness increases.

Correlation of film thickness to optical band gap of Sol-gel derived Ba0.9Gd0.1TiO3 thin films for optoelectronic applications

NASA Astrophysics Data System (ADS)

Teh, Yen Chin; Saif, Ala'eddin A.; Azhar Zahid Jamal, Zul; Poopalan, Prabakaran

2017-11-01

Ba0.9Gd0.1TiO3 thin films have been fabricated on SiO2/Si and fused silica by sol-gel method. The films are prepared through a spin coating process and annealed at 900 °C to obtain crystallized films. The effect of film thickness on the microstructure and optical band gap has been investigated using X-ray diffractometer, atomic force microscope and ultraviolet-visible spectroscopy, respectively. XRD patterns confirm that the films crystallized with tetragonal phase perovskite structure. The films surface morphology is analysed through amplitude parameter analysis to find out that the grain size and surface roughness are increased with the increase of films thickness. The transmittance and absorbance spectra reveal that all films exhibit high absorption in UV region. The evaluated optical band gap is obtained in the range of 3.67 - 3.78 eV and is found to be decreased as the thickness increase.

What is the mechanism of soap film entrainment?

PubMed

Saulnier, Laurie; Restagno, Frédéric; Delacotte, Jérôme; Langevin, Dominique; Rio, Emmanuelle

2011-11-15

Classical Frankel's law describes the formation of soap films and their evolution upon pulling, a model situation of film dynamics in foams (formation, rheology, and destabilization). With the purpose of relating film pulling to foam dynamics, we have built a new setup able to give an instantaneous measurement of film thickness, thus allowing us to determine film thickness profile during pulling. We found that only the lower part of the film is of uniform thickness and follows Frankel's law, provided the entrainment velocity is small. We show that this is due to confinement effects: there is not enough surfactant in the bulk to fully cover the newly created surfaces which results in immobile film surfaces. At large velocities, surfaces become mobile and then Frankel's law breaks down, leading to a faster drainage and thus to a nonstationary thickness at the bottom of the film. These findings should help in understanding the large dispersion of previous experimental data reported during the last 40 years and clarifying the pulling phenomenon of thin liquid films.

Enhanced Light Emitters Based on Metamaterials

DTIC Science & Technology

2015-03-30

program period in Queens College of CUNY (Nov 2012 – May 2014), we successfully demonstrated growth of ultrasmooth silver films using germanium wetting...of CUNY (Nov 2012 – May 2014), we successfully demonstrated growth of ultrasmooth silver films using germanium wetting layer, use of a high...progress made during the program include: - Realization of ultrasmooth sub-wavelength thick silver films for hyperbolic metamaterials - Using high

Molecular insight into nanoscale water films dewetting on modified silica surfaces.

PubMed

Zhang, Jun; Li, Wen; Yan, Youguo; Wang, Yefei; Liu, Bing; Shen, Yue; Chen, Haixiang; Liu, Liang

2015-01-07

In this work, molecular dynamics simulations are adopted to investigate the microscopic dewetting mechanism of nanoscale water films on methylated silica surfaces. The simulation results show that the dewetting process is divided into two stages: the appearance of dry patches and the quick contraction of the water film. First, the appearance of dry patches is due to the fluctuation in the film thickness originating from capillary wave instability. Second, for the fast contraction of water film, the unsaturated electrostatic and hydrogen bond interactions among water molecules are the driving forces, which induce the quick contraction of the water film. Finally, the effect of film thickness on water films dewetting is studied. Research results suggest that upon increasing the water film thickness from 6 to 8 Å, the final dewetting patterns experience separate droplets and striation-shaped structures, respectively. But upon further increasing the water film thickness, the water film is stable and there are no dry patches. The microscopic dewetting behaviors of water films on methylated silica surfaces discussed here are helpful in understanding many phenomena in scientific and industrial processes better.

Theoretical analysis of SAW propagation characteristics in (100) oriented AlN/diamond structure.

PubMed

Ro, Ruyen; Chiang, Yuan-Feng; Sung, Chia-Chi; Lee, Ruyue; Wu, Sean

2010-01-01

In this study, the finite element method is employed to calculate SAW characteristics in (100) AlN/diamond based structures with different electrical interfaces; i.e., IDT/ AlN/diamond, AlN/IDT/diamond, IDT/AlN/thin metal film/ diamond, and thin metal film/AlN/IDT/diamond. The effects of Cu and Al electrodes as well as the thickness of electrode on phase velocity, coupling coefficient, and reflectivity of SAWs are illustrated. Propagation characteristics of SAWs in (002) AlN/diamond-based structures are also presented for comparison. Simulation results show that to retain a large reflectivity for the design of RF filters and duplexers, the Cu IDT/(100) AlN/diamond structure possesses the highest phase velocity and largest coupling coefficient at the smallest AlN film thickness- to-wavelength ratio.

Effect of spatial distribution of wax and PEG-isocyanate on the morphology and hydrophobicity of starch films.

PubMed

Muscat, Delina; Adhikari, Raju; Tobin, Mark J; McKnight, Stafford; Wakeling, Lara; Adhikari, Benu

2014-10-13

This study proposes a novel method for improving surface hydrophobicity of glycerol plasticized high amylose (HAG) films. We used polyethylene glycol isocyanate (PEG-iso) crosslinker to link HAG and three natural waxes (beeswax, candelilla wax and carnauba wax) to produce HAG+wax+PEG-iso films. The spatial distributions of wax and PEG-iso across the thickness of these films were determined using Synchrotron-based Fourier transform infrared spectroscopy. The hydrophobicity and surface morphology of the films were determined using contact angle (CA) and scanning electron microscopic measurements, respectively. The distribution patterns of wax and the PEG-iso across the thickness of the film, and the nature of crystalline patterns formed on the surface of these films were found to be the key factors affecting surface hydrophobicity. The highest hydrophobicity (CA >90°) was created when the PEG-iso was primarily distributed in the interior of the films and a hierarchical circular pinnacle structure of solidified wax was formed on the surface. Copyright © 2014 Elsevier Ltd. All rights reserved.

Computational Study of In-Plane Phonon Transport in Si Thin Films

PubMed Central

Wang, Xinjiang; Huang, Baoling

2014-01-01

We have systematically investigated the in-plane thermal transport in Si thin films using an approach based on the first-principles calculations and lattice dynamics. The effects of phonon mode depletion induced by the phonon confinement and the corresponding variation in interphonon scattering, which may be important for the thermal conductivities of ultra-thin films but are often neglected in precedent studies, are considered in this study. The in-plane thermal conductivities of Si thin films with different thicknesses have been predicted over a temperature range from 80 K to 800 K and excellent agreements with experimental results are found. The validities of adopting the bulk phonon properties and gray approximation of surface specularity in thin film studies have been clarified. It is found that in ultra-thin films, while the phonon depletion will reduce the thermal conductivity of Si thin films, its effect is largely offset by the reduction in the interphonon scattering rate. The contributions of different phonon modes to the thermal transport and isotope effects in Si films with different thicknesses under various temperatures are also analyzed. PMID:25228061

Effect of thickness on electrical properties of SILAR deposited SnS thin films

NASA Astrophysics Data System (ADS)

Akaltun, Yunus; Astam, Aykut; Cerhan, Asena; ćayir, Tuba

2016-03-01

Tin sulfide (SnS) thin films of different thickness were prepared on glass substrates by successive ionic layer adsorption and reaction (SILAR) method at room temperature using tin (II) chloride and sodium sulfide aqueous solutions. The thicknesses of the films were determined using spectroscopic ellipsometry measurements and found to be 47.2, 65.8, 111.0, and 128.7nm for 20, 25, 30 and 35 deposition cycles respectively. The electrical properties of the films were investigated using d.c. two-point probe method at room temperature and the results showed that the resistivity was found to decrease with increasing film thickness.

Atomic-level study of a thickness-dependent phase change in gold thin films heated by an ultrafast laser.

PubMed

Gan, Yong; Shi, Jixiang; Jiang, Shan

2012-08-20

An ultrafast laser-induced phase change in gold thin films with different thicknesses has been simulated by the method of coupling the two-temperature model and the molecular dynamics, including transient optical properties. Numerical results show that the decrease of film thickness leads to faster melting in the early nonequilibrium time and a larger melting depth. Moreover, earlier occurrence and a higher rate of resolidification are observed for the thicker film. Further analysis reveals that the mechanism for the thickness-dependent phase change in the films is the fast electron thermal conduction in the nonequilibrium state.

Microstructure of a-C:H films prepared on a microtrench and analysis of ions and radicals behavior

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hirata, Yuki; Choi, Junho, E-mail: choi@mech.t.u-tokyo.ac.jp

2015-08-28

Amorphous carbon films (a-C:H) were prepared on a microtrench (4-μm pitch and 4-μm depth), and the uniformity of film thickness and microstructure of the films on the top, sidewall, and bottom surfaces of the microtrench were evaluated by scanning electron microscopy and Raman spectroscopy. The a-C:H films were prepared by bipolar-type plasma based ion implantation and deposition (bipolar PBII&D), and the negative pulse voltage, which is the main parameter dominating the film structure, was changed from −1.0 to −15 kV. Moreover, the behavior of ions and radicals was analyzed simultaneously by combining the calculation methods of Particle-In-Cell/Monte Carlo Collision (PIC-MCC) andmore » Direct Simulation Monte Carlo (DSMC) to investigate the coating mechanism for the microtrench. The results reveal that the thickness uniformity of a-C:H films improves with decreasing negative pulse voltage due to the decreasing inertia of incoming ions from the trench mouth, although the film thickness on the sidewall tends to be much smaller than that on the top and bottom surfaces of the trench. The normalized flux and the film thickness show similar behavior, i.e., the normalized flux or thickness at the bottom surface increases at low negative pulse voltages and then saturates at a certain value, whereas at the sidewall it monotonically decreases with increasing negative voltage. The microstructure of a-C:H films on the sidewall surface is very different from that on the top and bottom surfaces. The film structure at a low negative pulse voltage shifts to more of a polymer-like carbon (PLC) structure due to the lower incident energy of ions. Although the radical flux on the sidewall increases slightly, the overall film structure is not significantly changed because this film formation at a low negative voltage is originally dominated by radicals. On the other hand, the flux of radicals is dominant on the sidewall in the case of high negative pulse voltage, resulting in a deviation from the Raman behavior of a-C:H films deposited by bipolar PBII&D. This tendency intensifies as the negative voltage becomes greater. Also, the energy of incident ions on the sidewall of the trench increases with increasing negative voltage, which causes a shift in the Raman data of the sidewall to the bottom right corner on the figure depicting the relationship of the FWHM(G) and the G-peak position, indicating increased graphitization of a-C:H film.« less

Microstructure of a-C:H films prepared on a microtrench and analysis of ions and radicals behavior

NASA Astrophysics Data System (ADS)

Hirata, Yuki; Choi, Junho

2015-08-01

Amorphous carbon films (a-C:H) were prepared on a microtrench (4-μm pitch and 4-μm depth), and the uniformity of film thickness and microstructure of the films on the top, sidewall, and bottom surfaces of the microtrench were evaluated by scanning electron microscopy and Raman spectroscopy. The a-C:H films were prepared by bipolar-type plasma based ion implantation and deposition (bipolar PBII&D), and the negative pulse voltage, which is the main parameter dominating the film structure, was changed from -1.0 to -15 kV. Moreover, the behavior of ions and radicals was analyzed simultaneously by combining the calculation methods of Particle-In-Cell/Monte Carlo Collision (PIC-MCC) and Direct Simulation Monte Carlo (DSMC) to investigate the coating mechanism for the microtrench. The results reveal that the thickness uniformity of a-C:H films improves with decreasing negative pulse voltage due to the decreasing inertia of incoming ions from the trench mouth, although the film thickness on the sidewall tends to be much smaller than that on the top and bottom surfaces of the trench. The normalized flux and the film thickness show similar behavior, i.e., the normalized flux or thickness at the bottom surface increases at low negative pulse voltages and then saturates at a certain value, whereas at the sidewall it monotonically decreases with increasing negative voltage. The microstructure of a-C:H films on the sidewall surface is very different from that on the top and bottom surfaces. The film structure at a low negative pulse voltage shifts to more of a polymer-like carbon (PLC) structure due to the lower incident energy of ions. Although the radical flux on the sidewall increases slightly, the overall film structure is not significantly changed because this film formation at a low negative voltage is originally dominated by radicals. On the other hand, the flux of radicals is dominant on the sidewall in the case of high negative pulse voltage, resulting in a deviation from the Raman behavior of a-C:H films deposited by bipolar PBII&D. This tendency intensifies as the negative voltage becomes greater. Also, the energy of incident ions on the sidewall of the trench increases with increasing negative voltage, which causes a shift in the Raman data of the sidewall to the bottom right corner on the figure depicting the relationship of the FWHM(G) and the G-peak position, indicating increased graphitization of a-C:H film.

Thickness-dependent metal-to-insulator transition in epitaxial VO2 films

NASA Astrophysics Data System (ADS)

Zhi, Bowen; Gao, Guanyin; Tan, Xuelian; Chen, Pingfan; Wang, Lingfei; Jin, Shaowei; Wu, Wenbin

2014-12-01

The metal-to-insulator transition (MIT) of VO2 films with a thickness of 3-100 nm on TiO2(001) substrates has been investigated. When varying the film thickness from 10 to 100 nm, the MIT temperature was first kept at 290 K in the range of 10-14 nm, and then increased with thickness increasing due to the strain relaxation. The origin of the suppressed transition in VO2 films thinner than 6 nm was also investigated. When prolonging the in situ annealing time, the sharpness, amplitude and width of the transition for 4 nm thick films were all increased, suggesting improved crystallinity rather than Ti diffusion from the substrates. In addition, the MIT was suppressed when the VO2 films were covered by a TiO2 layer, indicating that the interface effect via the confinement of the dimerization of the V atoms should be the main reason.

Correlation of Gear Surface Fatigue Lives to Lambda Ratio (Specific Film Thickness)

NASA Technical Reports Server (NTRS)

Krantz, Timothy Lewis

2013-01-01

The effect of the lubrication regime on gear performance has been recognized, qualitatively, for decades. Often the lubrication regime is characterized by the specific film thickness being the ratio of lubricant film thickness to the composite surface roughness. Three studies done at NASA to investigate gearing pitting life are revisited in this work. All tests were done at a common load. In one study, ground gears were tested using a variety of lubricants that included a range of viscosities, and therefore the gears operated with differing film thicknesses. In a second and third study, the performance of gears with ground teeth and superfinished teeth were assessed. Thicker oil films provided longer lives as did improved surface finish. These datasets were combined into a common dataset using the concept of specific film thickness. This unique dataset of more 258 tests provides gear designers with some qualitative information to make gear design decisions.

Quantum transition and decoherence of levitating polaron on helium film thickness under an electromagnetic field

NASA Astrophysics Data System (ADS)

Kenfack, S. C.; Fotue, A. J.; Fobasso, M. F. C.; Djomou, J.-R. D.; Tiotsop, M.; Ngouana, K. S. L.; Fai, L. C.

2017-12-01

We have studied the transition probability and decoherence time of levitating polaron in helium film thickness. By using a variational method of Pekar type, the ground and the first excited states of polaron are calculated above the liquid-helium film placed on the polar substrate. It is shown that the polaron transits from the ground to the excited state in the presence of an external electromagnetic field in the plane. We have seen that, in the helium film, the effects of the magnetic and electric fields on the polaron are opposite. It is also shown that the energy, transition probability and decoherence time of the polaron depend sensitively on the helium film thickness. We found that decoherence time decreases as a function of increasing electron-phonon coupling strength and the helium film thickness. It is seen that the film thickness can be considered as a new confinement in our system and can be adjusted in order to reduce decoherence.

Mid-infrared laser-absorption diagnostic for vapor-phase fuel mole fraction and liquid fuel film thickness

NASA Astrophysics Data System (ADS)

Porter, J. M.; Jeffries, J. B.; Hanson, R. K.

2011-02-01

A novel two-wavelength mid-infrared laser-absorption diagnostic has been developed for simultaneous measurements of vapor-phase fuel mole fraction and liquid fuel film thickness. The diagnostic was demonstrated for time-resolved measurements of n-dodecane liquid films in the absence and presence of n-decane vapor at 25°C and 1 atm. Laser wavelengths were selected from FTIR measurements of the C-H stretching band of vapor n-decane and liquid n-dodecane near 3.4 μm (3000 cm-1). n-Dodecane film thicknesses <20 μm were accurately measured in the absence of vapor, and simultaneous measurements of n-dodecane liquid film thickness and n-decane vapor mole fraction (300 ppm) were measured with <10% uncertainty for film thicknesses <10 μm. A potential application of the measurement technique is to provide accurate values of vapor mole fraction in combustion environments where strong absorption by liquid fuel or oil films on windows make conventional direct absorption measurements of the gas problematic.

Physicochemical controls on absorbed water film thickness in unsaturated geological media

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tokunaga, T.

2011-06-14

Adsorbed water films commonly coat mineral surfaces in unsaturated soils and rocks, reducing flow and transport rates. Therefore, it is important to understand how adsorbed film thickness depends on matric potential, surface chemistry, and solution chemistry. Here, the problem of adsorbed water film thickness is examined through combining capillary scaling with the Derjaguin-Landau-Verwey-Overbeek (DLVO) theory. Novel aspects of this analysis include determining capillary influences on film thicknesses, and incorporating solution chemistry-dependent electrostatic potential at air-water interfaces. Capillary analysis of monodisperse packings of spherical grains provided estimated ranges of matric potentials where adsorbed films are stable, and showed that pendular ringsmore » within drained porous media retain most of the 'residual' water except under very low matric potentials. Within drained pores, capillary contributions to thinning of adsorbed films on spherical grains are shown to be small, such that DLVO calculations for flat surfaces are suitable approximations. Hamaker constants of common soil minerals were obtained to determine ranges of the dispersion component to matric potential-dependent film thickness. The pressure component associated with electrical double layer forces was estimated using the compression and linear superposition approximations. The pH-dependent electrical double layer pressure component is the dominant contribution to film thicknesses at intermediate values of matric potential, especially in lower ionic strength solutions (< 10 mol m{sup -3}) on surfaces with higher magnitude electrostatic potentials (more negative than - 50 mV). Adsorbed water films are predicted to usually range in thickness from 1 to 20 nm in drained pores and fractures of unsaturated environments.« less

Physicochemical controls on adsorbed water film thickness in unsaturated geological media

NASA Astrophysics Data System (ADS)

Tokunaga, Tetsu K.

2011-08-01

Adsorbed water films commonly coat mineral surfaces in unsaturated soils and rocks, reducing flow and transport rates. Therefore, it is important to understand how adsorbed film thickness depends on matric potential, surface chemistry, and solution chemistry. Here the problem of adsorbed water film thickness is examined by combining capillary scaling with the Derjaguin-Landau-Verwey-Overbeek (DLVO) theory. Novel aspects of this analysis include determining capillary influences on film thicknesses and incorporating solution chemistry-dependent electrostatic potential at air-water interfaces. Capillary analysis of monodisperse packings of spherical grains provided estimated ranges of matric potentials where adsorbed films are stable and showed that pendular rings within drained porous media retain most of the "residual" water except under very low matric potentials. Within drained pores, capillary contributions to thinning of adsorbed films on spherical grains are shown to be small, such that DLVO calculations for flat surfaces are suitable approximations. Hamaker constants of common soil minerals were obtained to determine ranges of the dispersion component to matric potential-dependent film thickness. The pressure component associated with electrical double-layer forces was estimated using the compression and linear superposition approximations. The pH-dependent electrical double-layer pressure component is the dominant contribution to film thicknesses at intermediate values of matric potential, especially in lower ionic strength solutions (<10 mol m-3) on surfaces with higher-magnitude electrostatic potentials (more negative than ≈-50 mV). Adsorbed water films are predicted to usually range in thickness from ≈1 to 20 nm in drained pores and fractures of unsaturated environments.

Thin liquid film in polymer tubing : dynamics and dewetting in partial wetting condition

NASA Astrophysics Data System (ADS)

Hayoun, Pascaline; Letailleur, Alban; Teisseire, Jérémie; Verneuil, Emilie; Lequeux, François; Barthel, Etienne

2015-11-01

Polymers such as PVC and Silicone are low cost materials widely used in industry to produce tubing for fluid transport. Most of these applications involve repeated, intermittent flow of liquids which can lead to unwanted contamination. This study aims at better understanding contamination mechanisms during intermittent flow in polymer tubing, and at elucidating the relation between flow, wetting and contamination. We experimentally and theoretically investigate, flow regimes as well as dewetting process at the triple line induced by gravity flow of a vertical liquid slug in a cylindrical geometry. Our results for Newtonian fluids evidence a succession of thick film formation, hydraulic jump creation in the thickness profile, oscillatory regime and destabilization leading to substrate contamination. In order to understand theoretically the flow, one crucial quantity to assess is the film thickness in the inside of the tube. Based on an absorption measurement method, we provide explanations for behaviors and flow regimes observed experimentally.

Anomalous Hall effect scaling in ferromagnetic thin films

NASA Astrophysics Data System (ADS)

Grigoryan, Vahram L.; Xiao, Jiang; Wang, Xuhui; Xia, Ke

2017-10-01

We propose a scaling law for anomalous Hall effect in ferromagnetic thin films. Our approach distinguishes multiple scattering sources, namely, bulk impurity, phonon for Hall resistivity, and most importantly the rough surface contribution to longitudinal resistivity. In stark contrast to earlier laws that rely on temperature- and thickness-dependent fitting coefficients, this scaling law fits the recent experimental data excellently with constant parameters that are independent of temperature and film thickness, strongly indicating that this law captures the underlying physical processes. Based on a few data points, this scaling law can even fit all experimental data in full temperature and thickness range. We apply this law to interpret the experimental data for Fe, Co, and Ni and conclude that (i) the phonon-induced skew scattering is unimportant as expected; (ii) contribution from the impurity-induced skew scattering is negative; (iii) the intrinsic (extrinsic) mechanism dominates in Fe (Co), and both the extrinsic and intrinsic contributions are important in Ni.

Stopping cross sections of He + ions in bismuth

NASA Astrophysics Data System (ADS)

Kuldeep; Jain, Animesh K.

1985-06-01

The stopping cross sections, ɛ( E), of He + ions in bismuth have been measured by Rutherford backscattering spectrometry (RBS) at incident energies ranging from E = 1.6-3.4 MeV. The energy loss of He + ions and thicknesses of the bismuth films deposited on aluminium substrates were determined from the RBS spectra at each energy for scattering angles of 130° and 165°. The film thicknesses of some of the samples were also measured by weighing and the results compared with those from RBS. Parameters for energy dependence of stopping cross section in the Varelas-Biersack interpolation formula have been obtained for bismuth from a fit to all the available experimental data. Accuracy of our method based on RBS is demonstrated by measurements on copper, for which ɛ( E) is already well studied. It is also shown that reliable ɛ( E) values may be obtained even on samples with non-uniform film thickness.

Effect of film thickness on localized surface plasmon enhanced chemical sensor

NASA Astrophysics Data System (ADS)

Kassu, Aschalew; Farley, Carlton; Sharma, Anup; Kim, Wonkyu; Guo, Junpeng

2014-05-01

A highly-sensitive, reliable, simple and inexpensive chemical detection and identification platform is demonstrated. The sensing technique is based on localized surface plasmon enhanced Raman scattering measurements from gold-coated highly-ordered symmetric nanoporous ceramic membranes fabricated from anodic aluminum oxide. To investigate the effects of the thickness of the sputter-coated gold films on the sensitivity of sensor, and optimize the performance of the substrates, the geometry of the nanopores and the film thicknesses are varied in the range of 30 nm to 120 nm. To characterize the sensing technique and the detection limits, surface enhanced Raman scatterings of low concentrations of a standard chemical adsorbed on the gold coated substrates are collected and analyzed. The morphology of the proposed substrates is characterized by atomic force microscopy and the optical properties including transmittance, reflectance and absorbance of each substrate are also investigated.

Thick Film Interference.

ERIC Educational Resources Information Center

Trefil, James

1983-01-01

Discusses why interference effects cannot be seen with a thick film, starting with a review of the origin of interference patterns in thin films. Considers properties of materials in films, properties of the light source, and the nature of light. (JN)

Thickness-dependence of optical constants for Ta2O5 ultrathin films

NASA Astrophysics Data System (ADS)

Zhang, Dong-Xu; Zheng, Yu-Xiang; Cai, Qing-Yuan; Lin, Wei; Wu, Kang-Ning; Mao, Peng-Hui; Zhang, Rong-Jun; Zhao, Hai-bin; Chen, Liang-Yao

2012-09-01

An effective method for determining the optical constants of Ta2O5 thin films deposited on crystal silicon (c-Si) using spectroscopic ellipsometry (SE) measurement with a two-film model (ambient-oxide-interlayer-substrate) was presented. Ta2O5 thin films with thickness range of 1-400 nm have been prepared by the electron beam evaporation (EBE) method. We find that the refractive indices of Ta2O5 ultrathin films less than 40 nm drop with the decreasing thickness, while the other ones are close to those of bulk Ta2O5. This phenomenon was due to the existence of an interfacial oxide region and the surface roughness of the film, which was confirmed by the measurement of atomic force microscopy (AFM). Optical properties of ultrathin film varying with the thickness are useful for the design and manufacture of nano-scaled thin-film devices.

Numerical investigation of thin film of polar liquid with added surfactant

NASA Astrophysics Data System (ADS)

Gordeeva, V. Y.; Lyushnin, A. V.

2017-11-01

The thin film of polar liquid with an added surfactant is investigated numerically in this paper. The evolution equations for film thickness and surface concentrations were solved using the semi-implicit Crank-Nikolson scheme. A few profiles on the liquid film developing from an ellipse-shaped drop were received. It was confirmed that the developing film divides into two coexisting films with predictable thickness. It was discovered that this pecularity of the polar liquid is valid only in little range of vapor pressure, which corresponds to the disjoining pressure. It was found that the surfactant desorbed on the gas-liquid interface does not effect to the thickness of the film while the surfactant desorbed on the substrate does effect. It was also found that the stable thickness of the film grows with absolute value of the vapor pressure in stated little range.

Characteristics of Sputtered Cr Thin Films and Application as a Working Electrode in Transparent Conductive Oxide-Less Dye-Sensitized Solar Cells.

PubMed

Park, Yong Seob; Kang, Ki-Noh; Kim, Young-Baek; Hwang, Sung Hwan; Lee, Jaehyeong

2018-09-01

Cr metal electrode was suggested as the working electrode material to fabricate DSSCs without the TCO, and thin films were fabricated by an unbalanced magnetron sputtering system. The surface morphologies show uniform and smooth surfaces regardless of various film thicknesses, and the small crystallites of various sizes were showed with the vertical direction on the surface of Cr thin films with the increase of film thickness. And also, the root mean square (RMS) surface roughness value of Cr thin films increased, and the sheet resistance is decreased with the increase of film thickness. The maximum cell efficiency of the TCO-less DSSC was observed when a Cr working electrode with a thickness of 80 nm was applied to the TCO-less DSSC. Consequently, these results are related to the result of the optimization of conduction characteristics, transmission properties and surface properties of Cr thin films.

Effects of high temperature and film thicknesses on the texture evolution in Ag thin films

NASA Astrophysics Data System (ADS)

Eshaghi, F.; Zolanvari, A.

2017-04-01

In situ high-temperature X-ray diffraction techniques were used to study the effect of high temperatures (up to 600°C) on the texture evolution in silver thin films. Ag thin films with different thicknesses of 40, 80, 120 and 160nm were sputtered on the Si(100) substrates at room temperature. Then, microstructure of thin films was determined using X-ray diffraction. To investigate the influence of temperature on the texture development in the Ag thin films with different thicknesses, (111), (200) and (220) pole figures were evaluated and orientation distribution functions were calculated. Minimizing the total energy of the system which is affected by competition between surface and elastic strain energy was a key factor in the as-deposited and post annealed thin films. Since sputtering depositions was performed at room temperature and at the same thermodynamic conditions, the competition growth caused the formation of the {122} < uvw \\rangle weak fiber texture in as-deposited Ag thin films. It was significantly observed that the post annealed Ag thin films showed {111} < uvw \\rangle orientations as their preferred orientations, but their preferred fiber texture varied with the thickness of thin films. Increasing thin film thickness from 40nm to 160nm led to decreasing the intensity of the {111} < uvw \\rangle fiber texture.

Structural, optical and ac electrical characterization of CBD synthesized NiO thin films: Influence of thickness

NASA Astrophysics Data System (ADS)

Das, M. R.; Mukherjee, A.; Mitra, P.

2017-09-01

We have studied the electrical conductivity, dielectric relaxation mechanism and impedance spectroscopy characteristics of nickel oxide (NiO) thin films synthesized by chemical bath deposition (CBD) method. Thickness dependent structural, optical and ac electrical characterization has been carried out and deposition time was varied to control the thickness. The material has been characterized using X-ray diffraction and UV-VIS spectrophotometer. Impedance spectroscopy analysis confirmed enhancement of ac conductivity and dielectric constant for films deposited with higher deposition time. Decrease of grain size in thicker films were confirmed from XRD analysis and activation energy of the material for electrical charge hopping process was increased with thickness of the film. Decrease in band gap in thicker films were observed which could be associated with creation of additional energy levels in the band gap of the material. Cole-Cole plot shows contribution of both grain and grain boundary towards total resistance and capacitance. The overall resistance was found to decrease from 14.6 × 105 Ω for 30 min deposited film ( 120 nm thick) to 2.42 × 105 Ω for 120 min deposited film ( 307 nm thick). Activation energy value to electrical conduction process evaluated from conductivity data was found to decrease with thickness. Identical result was obtained from relaxation time approach suggesting hopping mechanism of charge carriers.

Thermally stable dielectric responses in uniaxially (001)-oriented CaBi4Ti4O15 nanofilms grown on a Ca2Nb3O10- nanosheet seed layer.

PubMed

Kimura, Junichi; Takuwa, Itaru; Matsushima, Masaaki; Shimizu, Takao; Uchida, Hiroshi; Kiguchi, Takanori; Shiraishi, Takahisa; Konno, Toyohiko J; Shibata, Tatsuo; Osada, Minoru; Sasaki, Takayoshi; Funakubo, Hiroshi

2016-02-15

To realize a high-temperature capacitor, uniaxially (001)-oriented CaBi4Ti4O15 films with various film thicknesses were prepared on (100)cSrRuO3/Ca2Nb3O10(-) nanosheet/glass substrates. As the film thickness decreases to 50 nm, the out-of-plane lattice parameters decrease while the in-plane lattice ones increase due to the in-plane tensile strain. However, the relative dielectric constant (εr) at room temperature exhibits a negligible degradation as the film thickness decreases to 50 nm, suggesting that εr of (001)-oriented CaBi4Ti4O15 is less sensitive to the residual strain. The capacitance density increases monotonously with decreasing film thickness, reaching a value of 4.5 μF/cm(2) for a 50-nm-thick nanofilm, and is stable against temperature changes from room temperature to 400 °C irrespective of film thickness. This behaviour differs from that of the widely investigated perovskite-structured dielectrics. These results show that (001)-oriented CaBi4Ti4O15 films derived using Ca2Nb3O10(-) nanosheets as seed layers can be made candidates for high-temperature capacitor applications by a small change in the dielectric properties against film thickness and temperature variations.

Tunable Wetting Property in Growth Mode-Controlled WS2 Thin Films

NASA Astrophysics Data System (ADS)

Choi, Byoung Ki; Lee, In Hak; Kim, Jiho; Chang, Young Jun

2017-04-01

We report on a thickness-dependent wetting property of WS2/Al2O3 and WS2/SiO2/Si structures. We prepared WS2 films with gradient thickness by annealing thickness-controlled WO3 films at 800 °C in sulfur atmosphere. Raman spectroscopy measurements showed step-like variation in the thickness of WS2 over substrates several centimeters in dimension. On fresh surfaces, we observed a significant change in the water contact angle depending on film thickness and substrate. Transmission electron microscopy analysis showed that differences in the surface roughness of WS2 films can account for the contrasting wetting properties between WS2/Al2O3 and WS2/SiO2/Si. The thickness dependence of water contact angle persisted for longer than 2 weeks, which demonstrates the stability of these wetting properties when exposed to air contamination.

Method for fabrication of crack-free ceramic dielectric films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ma, Beihai; Narayanan, Manoj; Balachandran, Uthamalingam

The invention provides a process for forming crack-free dielectric films on a substrate. The process comprises the application of a dielectric precursor layer of a thickness from about 0.3 .mu.m to about 1.0 .mu.m to a substrate. The deposition is followed by low temperature heat pretreatment, prepyrolysis, pyrolysis and crystallization step for each layer. The deposition, heat pretreatment, prepyrolysis, pyrolysis and crystallization are repeated until the dielectric film forms an overall thickness of from about 1.5 .mu.m to about 20.0 .mu.m and providing a final crystallization treatment to form a thick dielectric film. The process provides a thick crack-free dielectricmore » film on a substrate, the dielectric forming a dense thick crack-free dielectric having an overall dielectric thickness of from about 1.5 .mu.m to about 20.0 .mu.m.« less

Thickness measurement of a thin hetero-oxide film with an interfacial oxide layer by X-ray photoelectron spectroscopy

NASA Astrophysics Data System (ADS)

Kim, Kyung Joong; Lee, Seung Mi; Jang, Jong Shik; Moret, Mona

2012-02-01

The general equation Tove = L cos θ ln(Rexp/R0 + 1) for the thickness measurement of thin oxide films by X-ray photoelectron spectroscopy (XPS) was applied to a HfO2/SiO2/Si(1 0 0) as a thin hetero-oxide film system with an interfacial oxide layer. The contribution of the thick interfacial SiO2 layer to the thickness of the HfO2 overlayer was counterbalanced by multiplying the ratio between the intensity of Si4+ from a thick SiO2 film and that of Si0 from a Si(1 0 0) substrate to the intensity of Si4+ from the HfO2/SiO2/Si(1 0 0) film. With this approximation, the thickness levels of the HfO2 overlayers showed a small standard deviation of 0.03 nm in a series of HfO2 (2 nm)/SiO2 (2-6 nm)/Si(1 0 0) films. Mutual calibration with XPS and transmission electron microscopy (TEM) was used to verify the thickness of HfO2 overlayers in a series of HfO2 (1-4 nm)/SiO2 (3 nm)/Si(1 0 0) films. From the linear relation between the thickness values derived from XPS and TEM, the effective attenuation length of the photoelectrons and the thickness of the HfO2 overlayer could be determined.

Structural, transport and microwave properties of 123/sapphire films: Thickness effect

DOE Office of Scientific and Technical Information (OSTI.GOV)

Predtechensky, MR.; Smal, A.N.; Varlamov, Y.D.

1994-12-31

The effect of thickness and growth conditions on the structure and microwave properties has been investigated for the 123/sapphire films. It has been shown that in the conditions of epitaxial growth and Al atoms do not diffuse from substrate into the film and the films with thickness up to 100nm exhibit the excellent DC properties. The increase of thickness of GdBaCuO films causes the formation of extended line-mesh defects and the increase of the surface resistance (R{sub S}). The low value of surface resistance R{sub S}(75GHz,77K)=20 mOhm has been obtained for the two layer YBaCuO/CdBaCuO/sapphire films.

Depth probing of the hydride formation process in thin Pd films by combined electrochemistry and fiber optics-based in situ UV/vis spectroscopy.

PubMed

Wickman, Björn; Fredriksson, Mattias; Feng, Ligang; Lindahl, Niklas; Hagberg, Johan; Langhammer, Christoph

2015-07-15

We demonstrate a flexible combined electrochemistry and fiber optics-based in situ UV/vis spectroscopy setup to gain insight into the depth evolution of electrochemical hydride and oxide formation in Pd films with thicknesses of 20 and 100 nm. The thicknesses of our model systems are chosen such that the films are thinner or significantly thicker than the optical skin depth of Pd to create two distinctly different situations. Low power white light is irradiated on the sample and analyzed in three different configurations; transmittance through, and, reflectance from the front and the back side of the film. The obtained optical sensitivities correspond to fractions of a monolayer of adsorbed or absorbed hydrogen (H) and oxygen (O) on Pd. Moreover, a combined simultaneous readout obtained from the different optical measurement configurations provides mechanistic insights into the depth-evolution of the studied hydrogenation and oxidation processes.

A study for anticorrosion and tribological behaviors of thin/thick diamond-like carbon films in seawater

NASA Astrophysics Data System (ADS)

Ye, Yewei; Jia, Shujuan; Zhang, Dawei; Liu, Wei; Zhao, Haichao

2018-03-01

The thin and thick diamond-like carbon (DLC) films were prepared by unbalanced magnetron sputtering technique on 304L stainless steels and (100) silicon wafers. Microstructure, mechanical, corrosion and tribological properties were systematically investigated by SEM, Raman, nanoindenter, scratch tester, modulab electrochemical workstation and R-tec multifunctional tribological tester. Results showed that the adhesion force presented a descending trend with the growth in soaking time. The adhesion force of the thin DLC film with high residual compressive stress (‑3.72 GPa) was higher than that of the thick DLC film (‑2.96 GPa). During the corrosion test, the thick DLC film showed a higher impendence and a lower corrosion current density than the thin DLC film, which is attributed to the barrier action of large thickness. Compared to bare 304L substrate, the friction coefficients and wear rates of DLC films in seawater were obviously decreased. Meanwhile, the thin DLC film with ideal residual compressive stress, super adhesion force and good plastic deformation resistance revealed an excellent anti-wear ability in seawater.

Effects of strain relaxation in Pr 0.67Sr 0.33MnO 3 films probed by polarization dependent X-ray absorption near edge structure

DOE PAGES

zhang, Bangmin; Chen, Jingsheng; Venkatesan, T.; ...

2016-01-28

In this study, the Mn K edge X-ray absorption near edge structure (XANES) of Pr 0.67Sr 0.33MnO 3 films with different thicknesses on (001) LaAlO 3 substrate were measured, and the effects of strain relaxation on film properties were investigated. The films experienced in-plane compressive strain and out-of-plane tensile strain. Strain relaxation evolved with the film thickness. In the polarization dependent XANES measurements, the in-plane (parallel) and out-of-plane (perpendicular) XANES spectrocopies were anisotropic with different absorption energy E r. The resonance energy Er along two directions shifted towards each other with increasing film thickness. Based on the X-ray diffraction results,more » it was suggested that the strain relaxation weakened the difference of the local environment and probability of electronic charge transfer (between Mn 3d and O 2p orbitals) along the in-plane and out-of-plane directions, which was responsible for the change of E r. XANES is a useful tool to probe the electronic structures, of which the effects on magnetic properties with the strain relaxation was also been studied.« less

Bismuth molybdate thick films as ethanol sensor

NASA Astrophysics Data System (ADS)

Jain, Kiran; Kumar, Vipin; Gupta, H. P.; Rastogi, A. C.

2003-10-01

Ethanol sensitivity of bismuth molybdate thick films and sintered pellets were investigated. Sintered pellets were prepared by traditional ceramic processing. Thick films were prepared by metallorganic decomposition process. Ethanol gas sensitivity was measured at various temperatures and concentrations. Thick films of alpha phase bismuth molybdate prepared by spray pyrolysis showed a very fast response to ethanol detection. The response time for the bulk samples is about 40 sec which decreased to about 6 sec for thick films at an operating temperature of 300°C. An extremely low level approximately 10 ppm detection and fast response makes this technique ideal for sensor element fabrication for detection and estimation of alcohol in breath-analyzer. Unlike SnO2, the resistance of these sensors is not affected by humidity at the operating temperature.

The microwave properties of Ag(Ta0.8Nb0.2)O3 thick film interdigital capacitors on alumina substrates

NASA Astrophysics Data System (ADS)

Lee, Ku-Tak; Koh, Jung-Hyuk

2012-01-01

In this paper, we will introduce the microwave properties of Ag(Ta0.8Nb0.2)O3 thick film planar type interdigital capacitors fabricated on alumina substrates. The tailored paraelectric state of Ag(Ta,Nb)O3 allows the material to be regarded as a part of the family of microwave materials. As thick films formed in our experiment, Ag(Ta,Nb)O3 exhibited extremely low dielectric loss with relatively high dielectric permittivity. This low dielectric loss is a very important issue for microwave applications. Therefore, we investigated the microwave properties of Ag(Ta0.8Nb0.2)O3 thick film planar type interdigital capacitors. Ag(Ta0.8Nb0.2)O3 thick films were prepared by a screen-printing method on alumina substrates and were sintered at 1140 °C for 2 hrs. The XRD analysis results showed that the Ag(Ta0.8Nb0.2)O3 thick film has the perovskite structure. The frequency dependent dielectric permittivity showed that these Ag(Ta0.8Nb0.2)O3 thick film planar type interdigital capacitors have very weak frequency dispersions with low loss tangents in the microwave range.

Investigation of thickness uniformity of thin metal films by using α-particle energy loss method and successive scanning measurements

NASA Astrophysics Data System (ADS)

Li, Gang; Xu, Jiayun; Bai, Lixin

2017-03-01

The metal films are widely used in the Inertial Confinement Fusion (ICF) experiments to obtain the radiation opacity, and the accuracy of the measuring results mainly depends on the accuracy of the film thickness and thickness uniformity. The traditional used measuring methods all have various disadvantages, the optical method and stylus method cannot provide mass thickness which reflects the internal density distribution of the films, and the weighing method cannot provide the uniformity of the thickness distribution. This paper describes a new method which combines the α-particle energy loss (AEL) method and the successive scanning measurements to obtain the film thickness and thickness uniformity. The measuring system was partly installed in the vacuum chamber, and the relationship of chamber pressure and energy loss caused by the residual air in the vacuum chamber was studied for the source-to-detector distance ranging from 1 to 5 cm. The results show that the chamber pressure should be less than 10 Pa for the present measuring system. In the process of measurement, the energy spectrum of α-particles transmitted through each different measuring point were obtained, and then recorded automatically by a self-developed multi-channel analysis software. At the same time, the central channel numbers of the spectrum (CH) were also saved in a text form document. In order to realize the automation of data processing and represent the thickness uniformity visually in a graphic 3D plot, a software package was developed to convert the CH values into film thickness and thickness uniformity. The results obtained in this paper make the film thickness uniformity measurements more accurate and efficient in the ICF experiments.

Low-temperature plasma-enhanced atomic layer deposition of 2-D MoS2: large area, thickness control and tuneable morphology.

PubMed

Sharma, Akhil; Verheijen, Marcel A; Wu, Longfei; Karwal, Saurabh; Vandalon, Vincent; Knoops, Harm C M; Sundaram, Ravi S; Hofmann, Jan P; Kessels, W M M Erwin; Bol, Ageeth A

2018-05-10

Low-temperature controllable synthesis of monolayer-to-multilayer thick MoS2 with tuneable morphology is demonstrated by using plasma enhanced atomic layer deposition (PEALD). The characteristic self-limiting ALD growth with a growth-per-cycle of 0.1 nm per cycle and digital thickness control down to a monolayer are observed with excellent wafer scale uniformity. The as-deposited films are found to be polycrystalline in nature showing the signature Raman and photoluminescence signals for the mono-to-few layered regime. Furthermore, a transformation in film morphology from in-plane to out-of-plane orientation of the 2-dimensional layers as a function of growth temperature is observed. An extensive study based on high-resolution transmission electron microscopy is presented to unravel the nucleation mechanism of MoS2 on SiO2/Si substrates at 450 °C. In addition, a model elucidating the film morphology transformation (at 450 °C) is hypothesized. Finally, the out-of-plane oriented films are demonstrated to outperform the in-plane oriented films in the hydrogen evolution reaction for water splitting applications.

Enhanced off-resonance magnetoelectric response in laser annealed PZT thick film grown on magnetostrictive amorphous metal substrate

DOE Office of Scientific and Technical Information (OSTI.GOV)

Palneedi, Haribabu; Functional Ceramics Group, Korea Institute of Materials Science; Maurya, Deepam

2015-07-06

A highly dense, 4 μm-thick Pb(Zr,Ti)O{sub 3} (PZT) film is deposited on amorphous magnetostrictive Metglas foil (FeBSi) by granule spray in vacuum process at room temperature, followed by its localized annealing with a continuous-wave 560 nm ytterbium fiber laser radiation. This longer-wavelength laser radiation is able to anneal the whole of thick PZT film layer without any deteriorative effects, such as chemical reaction and/or atomic diffusion, at the interface and crystallization of amorphous Metglas substrate. Greatly enhanced dielectric and ferroelectric properties of the annealed PZT are attributed to its better crystallinity and grain growth induced by laser irradiation. As a result, amore » colossal off-resonance magnetoelectric (ME) voltage coefficient that is two orders of magnitude larger than previously reported output from PZT/Metglas film-composites is achieved. The present work addresses the problems involved in the fabrication of PZT/Metglas film-composites and opens up emerging possibilities in employing piezoelectric materials with low thermal budget substrates (suitable for integrated electronics) and designing laminate composites for ME based devices.« less

Study on thick film spin-on carbon hardmask

NASA Astrophysics Data System (ADS)

Kim, Taeho; Kim, Youngmin; Hwang, Sunmin; Lee, Hyunsoo; Han, Miyeon; Lim, Sanghak

2017-03-01

A thick spin-on carbon hardmask (SOH) material is designed to overcome inherent problems of amorphous deposited carbon layer (ACL) and thick photoresist. For ACL in use of semiconductor production process, especially when film thickness from sub-micrometer up to few micrometers is required, not only its inherent low transparency at long wavelength light often causes alignment problems with under layers, but also considerable variation of film thickness within a wafer can also cause patterning problems. To avoid these issues, a thick SOH is designed with monomers of high transparency and good solubility at the same time. In comparison with photoresist, the SOH has good etch resistance and high thermal stability, and it provides wide process window of decreased film thickness and increased thermal budget up to 400°C after processes such as high temperature deposition of SiON. In order to achieve high thickness along with uniform film, many solvent factors was considered such as solubility parameter, surface tension, vapor pressure, and others. By optimizing many solvent factors, we were able to develop a product with a good coating performance

Role of high microwave power on growth and microstructure of thick nanocrystalline diamond films: A comparison with large grain polycrystalline diamond films

NASA Astrophysics Data System (ADS)

Tang, C. J.; Fernandes, A. J. S.; Girão, A. V.; Pereira, S.; Shi, Fa-Nian; Soares, M. R.; Costa, F.; Neves, A. J.; Pinto, J. L.

2014-03-01

In this work, we study the growth habit of nanocrystalline diamond (NCD) films by exploring the very high power regime, up to 4 kW, in a 5 kW microwave plasma chemical vapour deposition (MPCVD) reactor, through addition of a small amount of nitrogen and oxygen (0.24%) into 4% CH4 in H2 plasma. The coupled effect of high microwave power and substrate temperature on NCD growth behaviour is systematically investigated by varying only power, while fixing the remaining operating parameters. When the power increases from 2 kW to 4 kW, resulting also in rise of the Si substrate temperature higher than 150 °C, the diamond films obtained maintain the NCD habit, while the growth rate increases significantly. The highest growth rate of 4.6 μm/h is achieved for the film grown at 4 kW, which represents a growth rate enhancement of about 15 times compared with that obtained when using 2 kW power. Possible factors responsible for such remarkable growth rate enhancement of the NCD films are discussed. The evolution of NCD growth characteristics such as morphology, microstructure and texture is studied by growing thick films and comparing it with that of large grain polycrystalline (PCD) films. One important characteristic of the NCD films obtained, in contrast to PCD films, is that irrespective of deposition time (i.e. film thickness), their grain size and surface roughness remain in the nanometer range throughout the growth. Finally, based on our present and previous experimental results, a potential parameter window is established for fast growth of NCD films under high power conditions.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Luo, Sijun, E-mail: sluo1@tulane.edu; Riggs, Brian C.; Shipman, Joshua T.

Direct integration of proton conductor films on Pt-coated substrates opens the way to film-based proton transport devices. Columnar SrZr{sub 0.95}Y{sub 0.05}O{sub 3−δ} (SZY) films with dense microstructure were deposited on Pt-coated MgO(100) substrates at 830 °C by pulsed laser deposition. The optimal window of ambient O{sub 2} pressure for good crystallinity of SZY films is from 400 to 600 mTorr. The ambient O{sub 2} compresses the plasma plume of SZY and increases the deposition rate. The 10 nm thick Ti adhesion layer on MgO(100) greatly affects the orientation of the sputtered Pt layers. Pt deposited directly on MgO shows a highly (111)-preferredmore » orientation and leads to preferentially oriented SZY films while the addition of a Ti adhesion layer makes Pt show a less preferential orientation that leads to randomly oriented SZY films. The RMS surface roughness of preferentially oriented SZY films is larger than that of randomly oriented SZY films deposited under the same ambient O{sub 2} pressure. As the O{sub 2} pressure increased, the RMS surface roughness of preferentially oriented SZY films increased, reaching 45.7 nm (2.61% of film thickness) at 600 mTorr. This study revealed the ambient O{sub 2} pressure and orientation dependent surface roughness of SZY films grown on Pt-coated MgO substrates, which provides the potential to control the surface microstructure of SZY films for electrochemical applications in film-based hydrogen devices.« less

A film-based wall shear stress sensor for wall-bounded turbulent flows

NASA Astrophysics Data System (ADS)

Amili, Omid; Soria, Julio

2011-07-01

In wall-bounded turbulent flows, determination of wall shear stress is an important task. The main objective of the present work is to develop a sensor which is capable of measuring surface shear stress over an extended region applicable to wall-bounded turbulent flows. This sensor, as a direct method for measuring wall shear stress, consists of mounting a thin flexible film on the solid surface. The sensor is made of a homogeneous, isotropic, and incompressible material. The geometry and mechanical properties of the film are measured, and particles with the nominal size of 11 μm in diameter are embedded on the film's surface to act as markers. An optical technique is used to measure the film deformation caused by the flow. The film has typically deflection of less than 2% of the material thickness under maximum loading. The sensor sensitivity can be adjusted by changing the thickness of the layer or the shear modulus of the film's material. The paper reports the sensor fabrication, static and dynamic calibration procedure, and its application to a fully developed turbulent channel flow at Reynolds numbers in the range of 90,000-130,000 based on the bulk velocity and channel full height. The results are compared to alternative wall shear stress measurement methods.

Atomic Layer Deposition of TiO2 for a High-Efficiency Hole-Blocking Layer in Hole-Conductor-Free Perovskite Solar Cells Processed in Ambient Air.

PubMed

Hu, Hang; Dong, Binghai; Hu, Huating; Chen, Fengxiang; Kong, Mengqin; Zhang, Qiuping; Luo, Tianyue; Zhao, Li; Guo, Zhiguang; Li, Jing; Xu, Zuxun; Wang, Shimin; Eder, Dominik; Wan, Li

2016-07-20

In this study we design and construct high-efficiency, low-cost, highly stable, hole-conductor-free, solid-state perovskite solar cells, with TiO2 as the electron transport layer (ETL) and carbon as the hole collection layer, in ambient air. First, uniform, pinhole-free TiO2 films of various thicknesses were deposited on fluorine-doped tin oxide (FTO) electrodes by atomic layer deposition (ALD) technology. Based on these TiO2 films, a series of hole-conductor-free perovskite solar cells (PSCs) with carbon as the counter electrode were fabricated in ambient air, and the effect of thickness of TiO2 compact film on the device performance was investigated in detail. It was found that the performance of PSCs depends on the thickness of the compact layer due to the difference in surface roughness, transmittance, charge transport resistance, electron-hole recombination rate, and the charge lifetime. The best-performance devices based on optimized TiO2 compact film (by 2000 cycles ALD) can achieve power conversion efficiencies (PCEs) of as high as 7.82%. Furthermore, they can maintain over 96% of their initial PCE after 651 h (about 1 month) storage in ambient air, thus exhibiting excellent long-term stability.

Novel Blend for Producing Porous Chitosan-Based Films Suitable for Biomedical Applications

PubMed Central

Nady, Norhan; Kandil, Sherif H.

2018-01-01

In this work, a chitosan–gelatin–ferulic acid blend was used in different ratios for preparing novel films that can be used in biomedical applications. Both acetic and formic acid were tested as solvents for the chitosan–gelatin–ferulic acid blend. Glycerol was tested as a plasticizer. The thickness, mechanical strength, static water contact angle and water uptake of the prepared films were determined. Also, the prepared films were characterized using different analysis techniques such as Fourier transform infrared spectroscopy (FT-IR) analysis, X-ray diffraction (XRD), thermal gravimetric analysis (TGA), differential scanning calorimetry (DSC) and scanning electron microscopy (SEM). Acetic acid produced continuous compact surfaces that are not recommended for testing in biomedical applications. The plasticized chitosan–gelatin–ferulic acid blend, using formic acid solvent, produced novel hexagonal porous films with a pore size of around 10–14 µm. This blend is recommended for preparing films (scaffolds) for testing in biomedical applications as it has the advantage of a decreased thickness. PMID:29301357

The study on the electrical resistivity of Cu/V multilayer films subjected to helium (He) ion irradiation

NASA Astrophysics Data System (ADS)

Wang, P. P.; Xu, C.; Fu, E. G.; Du, J. L.; Gao, Y.; Wang, X. J.; Qiu, Y. H.

2018-05-01

Sputtering-deposited Cu/V multilayer films with the individual layer thickness varying from 2.5 nm to 100 nm were irradiated by 1 MeV helium (He) ion at the fluence of 6 ×1016 ions ·cm-2 at room temperature. The resistivity of Cu/V multilayer films after ion irradiation was evaluated as a function of individual layer thickness at 300 K and compared with their resistivity before ion irradiation. The results show that the resistivity change before and after ion irradiation is largely determined by the interface structure, grain boundary and radiation induced defects. A model amended based on the model used in describing the resistivity of as-deposited Cu/V multilayer films was proposed to describe the resistivity of ion irradiated Cu/V multilayer films by considering the point defects induced by ion irradiation, the effect of interface absorption on defects and the effect of interface microstructure in the multilayer films.

Development of high efficiency thin film polycrystalline silicon solar cells using VEST process

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ishihara, T.; Arimoto, S.; Morikawa, H.

1998-12-31

Thin film Si solar cell has been developed using Via-hole Etching for the Separation of Thin films (VEST) process. The process is based on SOI technology of zone-melting recrystallization (ZMR) followed by chemical vapor deposition (CVD), separation of thin film, and screen printing. Key points for achieving high efficiency are (1) quality of Si films, (2) back surface emitter (BSE), (3) front surface emitter etch-back process, (4) back surface field (BSF) layer thickness and its resistivity, and (5) defect passivation by hydrogen implantation. As a result of experiments, the authors have achieved 16% efficiency (V{sub oc}:0.589V, J{sub sc}:35.6mA/cm{sup 2}, F,F:0.763)more » with a cell size of 95.8cm{sup 2} and the thickness of 77 {micro}m. It is the highest efficiency ever reported for large area thin film Si solar cells.« less

Aluminum silicide microparticles transformed from aluminum thin films by hypoeutectic interdiffusion

PubMed Central

2014-01-01

Aluminum silicide microparticles with oxidized rough surfaces were formed on Si substrates through a spontaneous granulation process of Al films. This microparticle formation was caused by interdiffusion of Al and Si atoms at hypoeutectic temperatures of Al-Si systems, which was driven by compressive stress stored in Al films. The size, density, and the composition of the microparticles could be controlled by adjusting the annealing temperature, time, and the film thickness. High-density microparticles of a size around 10 μm and with an atomic ratio of Si/Al of approximately 0.8 were obtained when a 90-nm-thick Al film on Si substrate was annealed for 9 h at 550°C. The microparticle formation resulted in a rapid increase of the sheet resistance, which is a consequence of substantial consumption of Al film. This simple route to size- and composition-controllable microparticle formation may lay a foundation stone for the thermoelectric study on Al-Si alloy-based heterogeneous systems. PMID:24994964

Aluminum silicide microparticles transformed from aluminum thin films by hypoeutectic interdiffusion.

PubMed

Noh, Jin-Seo

2014-01-01

Aluminum silicide microparticles with oxidized rough surfaces were formed on Si substrates through a spontaneous granulation process of Al films. This microparticle formation was caused by interdiffusion of Al and Si atoms at hypoeutectic temperatures of Al-Si systems, which was driven by compressive stress stored in Al films. The size, density, and the composition of the microparticles could be controlled by adjusting the annealing temperature, time, and the film thickness. High-density microparticles of a size around 10 μm and with an atomic ratio of Si/Al of approximately 0.8 were obtained when a 90-nm-thick Al film on Si substrate was annealed for 9 h at 550°C. The microparticle formation resulted in a rapid increase of the sheet resistance, which is a consequence of substantial consumption of Al film. This simple route to size- and composition-controllable microparticle formation may lay a foundation stone for the thermoelectric study on Al-Si alloy-based heterogeneous systems.

Comparative study of soft thermal printing and lamination of dry thick photoresist films for the uniform fabrication of polymer MOEMS on small-sized samples

NASA Astrophysics Data System (ADS)

Abada, S.; Salvi, L.; Courson, R.; Daran, E.; Reig, B.; Doucet, J. B.; Camps, T.; Bardinal, V.

2017-05-01

A method called ‘soft thermal printing’ (STP) was developed to ensure the optimal transfer of 50 µm-thick dry epoxy resist films (DF-1050) on small-sized samples. The aim was the uniform fabrication of high aspect ratio polymer-based MOEMS (micro-optical-electrical-mechanical system) on small and/or fragile samples, such as GaAs. The printing conditions were optimized, and the resulting thickness uniformity profiles were compared to those obtained via lamination and SU-8 standard spin-coating. Under the best conditions tested, STP and lamination produced similar results, with a maximum deviation to the central thickness of 3% along the sample surface, compared to greater than 40% for SU-8 spin-coating. Both methods were successfully applied to the collective fabrication of DF1050-based MOEMS designed for the dynamic focusing of VCSELs (vertical-cavity surface-emitting lasers). Similar, efficient electro-thermo-mechanical behaviour was obtained in both cases.

SnO2 epitaxial films with varying thickness on c-sapphire: Structure evolution and optical band gap modulation

NASA Astrophysics Data System (ADS)

Zhang, Mi; Xu, Maji; Li, Mingkai; Zhang, Qingfeng; Lu, Yinmei; Chen, Jingwen; Li, Ming; Dai, Jiangnan; Chen, Changqing; He, Yunbin

2017-11-01

A series of a-plane SnO2 films with thickness between 2.5 nm and 1436 nm were grown epitaxially on c-sapphire by pulsed laser deposition (PLD), to allow a detailed probe into the structure evolution and optical band gap modulation of SnO2 with growing thickness. All films exhibit excellent out-of-plane ordering (lowest (200) rocking-curve half width ∼0.01°) with an orientation of SnO2(100) || Al2O3(0001), while three equivalent domains that are rotated by 120° with one another coexist in-plane with SnO2[010] || Al2O3 [11-20]. Initially the SnO2(100) film assumes a two-dimensional (2D) layer-by-layer growth mode with atomically smooth surface (minimum root-mean-square roughness of 0.183 nm), and endures compressive strain along both c and a axes as well as mild tensile strain along the b-axis. With increasing thickness, transition from the 2D to 3D island growth mode takes place, leading to formation of various defects to allow relief of the stress and thus relaxation of the film towards bulk SnO2. More interestingly, with increasing thickness from nm to μm, the SnO2 films present a non-monotonic V-shaped variation in the optical band gap energy. While the band gap of SnO2 films thinner than 6.1 nm increases rapidly with decreasing film thickness due to the quantum size effect, the band gap of thicker SnO2 films broadens almost linearly with increasing film thickness up to 374 nm, as a result of the strain effect. The present work sheds light on future design of SnO2 films with desired band gap for particular applications by thickness control and strain engineering.

Direct Observation of the BCC (100) Plane in Thin Films of Sphere-forming Diblock Copolymers

NASA Astrophysics Data System (ADS)

Ji, Shengxiang; Nagpal, Umang; Liao, Wen; de Pablo, Juan; Nealey, Paul

2010-03-01

In sphere-forming diblock copolymers, periodic arrays of spheres are arranged in a body-centred cubic (BCC) lattice structure in bulk. However, in thin films different surface morphologies were observed as a function of the film thickness, and the transition from the hexagonal array to the BCC (110) arrangement of spheres on film surfaces was located with respect to the increase of the film thickness. Here we report the first direct observation of the BCC (100) plane in thin films of poly (styrene-b-methyl methacrylate) diblock copolymers on homogeneous substrates. By balancing the surface energies of both blocks, the lower energy BCC (100) plane corresponding to a square arrangement of half spheres, formed on film surfaces when the film thickness was commensurate with the spacing, L100, between (100) planes or greater than 2 L100. A hexagonal arrangement of spheres was only observed when the thickness was less than 2 L100 and incommensurate with 1 L100. Monte Carlo (MC) simulation confirmed our experimental observation and was used to investigate the transition of the arrangement of spheres as a function of the film thickness.

Ice-Accretion Scaling Using Water-Film Thickness Parameters

NASA Technical Reports Server (NTRS)

Anderson, David N.; Feo, Alejandro

2003-01-01

Studies were performed at INTA in Spain to determine water-film thickness on a stagnation-point probe inserted in a simulated cloud. The measurements were correlated with non-dimensional parameters describing the flow and the cloud conditions. Icing scaling tests in the NASA Glenn Icing Research Tunnel were then conducted using the Ruff scaling method with the scale velocity found by matching scale and reference values of either the INTA non-dimensional water-film thickness or a Weber number based on that film thickness. For comparison, tests were also performed using the constant drop-size Weber number and the average-velocity methods. The reference and scale models were both aluminum, 61-cm-span, NACA 0012 airfoil sections at 0 deg. AOA. The reference had a 53-cm-chord and the scale, 27 cm (1/2 size). Both models were mounted vertically in the center of the IRT test section. Tests covered a freezing fraction range of 0.28 to 1.0. Rime ice (n = 1.0) tests showed the consistency of the IRT calibration over a range of velocities. At a freezing fraction of 0.76, there was no significant difference in the scale ice shapes produced by the different methods. For freezing fractions of 0.40, 0.52 and 0.61, somewhat better agreement with the reference horn angles was typically achieved with the average-velocity and constant-film thickness methods than when either of the two Weber numbers was matched to the reference value. At a freezing fraction of 0.28, the four methods were judged equal in providing simulations of the reference shape.

Electroluminescence from ZnCuInS/ZnS quantum dots/poly(9-vinylcarbazole) multilayer films with different thicknesses of quantum dot layer

NASA Astrophysics Data System (ADS)

Dong, Xiaofei; Xu, Jianping; Shi, Shaobo; Zhang, Xiaosong; Li, Lan; Yin, Shougen

2017-05-01

We report tunable electroluminescence (EL) from solution-processed ZnCuInS/ZnS (ZCIS/ZnS) quantum dots (QDs)/poly(9-vinlycarbazole) multilayer films. The EL spectra exhibit a red shift as the QD layer thickness increases. By analyzing the dependence of the applied voltage and the ZCIS/ZnS QD layer thickness on the EL spectra, the origin of the red shift is associated with the increased trap density of QDs that induces the injected electrons to be trapped in the deep donor level. The current conduction mechanism based on the current density-voltage curves at different voltage regions was discussed.

New possibilities for tuning ultrathin cobalt film magnetic properties by a noble metal overlayer.

PubMed

Kisielewski, M; Maziewski, A; Tekielak, M; Wawro, A; Baczewski, L T

2002-08-19

Complementary multiscale magneto-optical studies based on the polar Kerr effect are carried out on an ultrathin cobalt wedge covered with a silver wedge and subsequently with the Au thick layer. A few monolayers of Ag are found to have a substantial effect on magnetic anisotropy, the coercivity field, and Kerr rotation. The silver overlayer thickness-driven magnetic reorientation from easy axis to easy plane generates a new type of 90 degrees magnetic wall for cobalt thicknesses between 1.3 and 1.8 nm. The tuning of the wall width in a wide range is possible. Tailoring of the overlayer structure can be used for ultrathin film magnetic patterning.

Additive-free thick graphene film as an anode material for flexible lithium-ion batteries

NASA Astrophysics Data System (ADS)

Rana, Kuldeep; Kim, Seong Dae; Ahn, Jong-Hyun

2015-04-01

This work demonstrates a simple route to develop mechanically flexible electrodes for Li-ion batteries (LIBs) that are usable as lightweight effective conducting networks for both cathodes and anodes. Removing electrochemically dead elements, such as binders, conducting agents and metallic current collectors, from the battery components will allow remarkable progress in this area. To investigate the feasibility of using thick, additive-free graphene films as anodes for flexible LIBs, we have synthesized and tested thick, additive-free, freestanding graphene films as anodes, first in a coin cell and further in a flexible full cell. As an anode material in a half cell, it showed a discharge capacity of about 350 mA h g-1 and maintained nearly this capacity over 50 cycles at various current rates. This film was also tested as an anode material in a full cell with a LiCoO2 cathode and showed good electrochemical performance. Because the graphene-based flexible film showed good performance in half- and full coin cells, we used this film as a flexible anode for flexible LIBs. No conducting agent or binder was used in the anode side, which helped in realizing the flexible LIBs. Using this, we demonstrate a thin, lightweight and flexible lithium ion battery with good electrochemical performance in both its flat and bent states.This work demonstrates a simple route to develop mechanically flexible electrodes for Li-ion batteries (LIBs) that are usable as lightweight effective conducting networks for both cathodes and anodes. Removing electrochemically dead elements, such as binders, conducting agents and metallic current collectors, from the battery components will allow remarkable progress in this area. To investigate the feasibility of using thick, additive-free graphene films as anodes for flexible LIBs, we have synthesized and tested thick, additive-free, freestanding graphene films as anodes, first in a coin cell and further in a flexible full cell. As an anode material in a half cell, it showed a discharge capacity of about 350 mA h g-1 and maintained nearly this capacity over 50 cycles at various current rates. This film was also tested as an anode material in a full cell with a LiCoO2 cathode and showed good electrochemical performance. Because the graphene-based flexible film showed good performance in half- and full coin cells, we used this film as a flexible anode for flexible LIBs. No conducting agent or binder was used in the anode side, which helped in realizing the flexible LIBs. Using this, we demonstrate a thin, lightweight and flexible lithium ion battery with good electrochemical performance in both its flat and bent states. Electronic supplementary information (ESI) available. See DOI: 10.1039/c4nr06082b

Phase Transitions and Domain Structure in Mixed Tetragonal-Rhombohedral BiFeO3 thin films using Raman Spectroscopy and Nonlinear Optics

NASA Astrophysics Data System (ADS)

Vlahos, E.; Kumar, A.; Denev, S.; Melville, A.; Adamo, C.; Ihlefeld, J. F.; Sheng, G.; Zeches, R. J.; Zhang, J. X.; He, Q.; Yang, C. H.; Erni, R.; Rossell, M. D.; J, A.; Hatt; Chu, Y.-H.; Wang, C. H.; Ederer, C.; Gopalan, V.; Chen, L. Q.; Schlom, D. G.; Spaldin, N. A.; Martin, L. W.; Ramesh, R.; Tenne, Dmitri

2010-03-01

We have shown that biaxially strained BiFeO3 thin films can undergo an isosymmetric phase transition from a rhombohedral-like to a tetragonal-like phase. This talk discusses the evolution of the tetragonal and the mixed phases in BiFeO3/YAlO3 thin films with varying film thickness using optical second harmonic generation (SHG) and Raman spectroscopy. 25nm, 75nm, and 225 nm thick films were studied; thinner films are dominated by the tetragonal phase, whereas thicker films exhibit both tetragonal and rhombohedral phases. The evolution of these phases as function of film thickness and temperature was experimentally determined.

Transparent thin films of indium tin oxide: Morphology-optical investigations, inter dependence analyzes

NASA Astrophysics Data System (ADS)

Prepelita, P.; Filipescu, M.; Stavarache, I.; Garoi, F.; Craciun, D.

2017-12-01

Using a fast and eco-friendly deposition method, ITO thin films with different thicknesses (0.5 μm-0.7 μm) were deposited on glass substrates by radio frequency magnetron sputtering technique. A comparative analysis of these oxide films was then carried out. AFM investigations showed that the deposited films were smooth, uniform and having a surface roughness smaller than 10 nm. X-ray diffraction investigations showed that all samples were polycrystalline and the grain sizes of the films, corresponding to (222) cubic reflection, were found to increase with the increasing film thickness. The optical properties, evaluated by UV-VIS-NIR (190-3000 nm) spectrophotometer, evidenced that the obtained thin films were highly transparent, with a transmission coefficient between 90 and 96%, depending on the film thickness. Various methods (Swanepoel and Drude) were employed to appreciate the optimal behaviour of transparent oxide films, in determining the dielectric optical parameters and refractive index dispersion for ITO films exhibiting interference patterns in the optical transmission spectra. The electrical conductivity also increased as the film thickness increased.

Effect of copper phthalocyanine thickness on surface morphology, optical and electrical properties of Au/CuPc/n-Si heterojunction

NASA Astrophysics Data System (ADS)

Reddy, P. R. Sekhar; Janardhanam, V.; Jyothi, I.; Harsha, Cirandur Sri; Reddy, V. Rajagopal; Lee, Sung-Nam; Won, Jonghan; Choi, Chel-Jong

2018-02-01

Effects of the thickness of copper phthalocyanine (CuPc) film (2, 5, 10, 15, 20, 30 and 40 nm) on the surface morphology, optical and electrical properties of Au/CuPc/n-Si heterojunction have been investigated. The optical band gap of CuPc film was increased with increase in the thickness of the CuPc film. The electrical properties of the Au/n-Si Schottky junction and Au/CuPc/n-Si heterojunctions were characterized by current-voltage ( I-V) and capacitance-voltage ( C-V) measurements. The barrier height, ideality factor and series resistance were estimated based on the I-V, Cheung's and Norde's methods. The barrier heights increased with increasing CuPc interlayer thickness up to 15 nm and remained constant for thickness above 20 nm, associated with the incapability of the generated carriers to reach the interface. The discrepancy in the barrier heights obtained from I-V and C-V measurements indicates the presence of barrier inhomogeneity at the interface as evidenced by higher ideality factor values. It can be concluded that the electrical properties of Au/n-Si Schottky junction can be significantly altered with the variation of CuPc thickness as interlayer.

Limitation in thin-film sensing with transmission-mode terahertz time-domain spectroscopy.

PubMed

Withayachumnankul, Withawat; O'Hara, John F; Cao, Wei; Al-Naib, Ibraheem; Zhang, Weili

2014-01-13

Thin-film sensing with a film thickness much less than a wavelength is an important challenge in conventional transmission-mode terahertz time-domain spectroscopy (THz-TDS). Since the interaction length between terahertz waves and a sample film is short, a small change in the transmitted signal compared with the reference is considerably obscured by system uncertainties. In this article, several possible thin-film measurement procedures are carefully investigated. It is suggested that an alternating sample and reference measurement approach is most robust for thin-film sensing. In addition, a closed-form criterion is developed to determine the critical thickness, i.e., the minimal thickness of a film unambiguously detectable by transmission-mode THz-TDS. The analysis considers influences from the Fresnel transmission at interfaces and the Fabry-Pérot reflections, in addition to the propagation across the film. The experimental results show that typical THz-TDS systems can detect polymer films with a thickness down to a few microns, two orders of magnitude less than the wavelength. For reasonably accurate characterization, it is recommended that the film thickness be at least ten times above this limit. The analysis is readily extended to biomolecular and semiconductor films. The criterion can be used to estimate the system-dependent performance in thin-film sensing applications, and can help to ascertain whether an alternative terahertz sensing modality is necessary.

Domain epitaxy for thin film growth

DOEpatents

Narayan, Jagdish

2005-10-18

A method of forming an epitaxial film on a substrate includes growing an initial layer of a film on a substrate at a temperature T.sub.growth, said initial layer having a thickness h and annealing the initial layer of the film at a temperature T.sub.anneal, thereby relaxing the initial layer, wherein said thickness h of the initial layer of the film is greater than a critical thickness h.sub.c. The method further includes growing additional layers of the epitaxial film on the initial layer subsequent to annealing. In some embodiments, the method further includes growing a layer of the film that includes at least one amorphous island.

Ultrafast demagnetisation dependence on film thickness: A TDDFT calculation

NASA Astrophysics Data System (ADS)

Singh, N.; Sharma, S.

2018-04-01

Ferromagnetic materials when subjected to intense laser pulses leads to reduction of their magnetisation on an ultrafast scale. Here, we perform an ab-initio calculation to study the behavior of ultrafast demagnetisation as a function of film thickness for Nickel as compared to the bulk of the material. In thin films surface formation results in amplification of demagnetisation with the percentage of demagnetisation depending upon the film thickness.

Experimental study of the polymer powder film thickness uniformity produced by the corona discharge

NASA Astrophysics Data System (ADS)

Fazlyyyakhmatov, Marsel

2017-01-01

The results of an experimental study of the polymer powder film thickness uniformity are presented. Polymer powder films are produced by the electrostatic field of corona discharge. Epoxy and epoxy-polyester powder films with thickness in the range of 30-120 microns are studied. Experimentally confirmed possibility of using these coatings as protective matching layer of piezoceramic transducers at frequencies of 0.5-15 MHz.

Nanostructured MgTiO3 thick films obtained by electrophoretic deposition from nanopowders prepared by solar PVD

NASA Astrophysics Data System (ADS)

Apostol, Irina; Mahajan, Amit; Monty, Claude J. A.; Venkata Saravanan, K.

2015-12-01

A novel combination of solar physical vapor deposition (SPVD) and electrophoretic deposition (EPD) that was developed to grow MgTiO3 nanostructured thick films is presented. Obtaining nanostructured MgTiO3 thick films, which can replace bulk ceramic components, a major trend in electronic industry, is the main objective of this work. The advantage of SPVD is direct synthesis of nanopowders, while EPD is simple, fast and inexpensive technique for preparing thick films. SPVD technique was developed at CNRS-PROMES Laboratory, Odeillo-Font Romeu, France, while the EPD was performed at University of Aveiro - DeMAC/CICECO, Portugal. The nanopowders with an average crystallite size of about 30 nm prepared by SPVD were dispersed in 50 ml of acetone in basic media with addition of triethanolamine. The obtained well-dispersed and stable suspensions were used for carrying out EPD on 25 μm thick platinum foils. After deposition, films with thickness of about 22-25 μm were sintered in air for 15 min at 800, 900 and 1000 °C. The structural and microstructural characterization of the sintered thick films was carried out using XRD and SEM, respectively. The thickness of the sintered samples were about 18-20 μm, which was determined by cross-sectional SEM. Films sintered at 900 °C exhibit a dielectric constant, ɛr ∼18.3 and dielectric loss, tan δ ∼0.0012 at 1 MHz. The effects of processing techniques (SPVD and EPD) on the structure, microstructure and dielectric properties are reported in detail. The obtained results indicate that the thick films obtained in the present study can be promising for low loss materials for microwave and millimeter wave applications.

Thickness-modulated anisotropic ferromagnetism in Fe-doped epitaxial HfO2 thin films

NASA Astrophysics Data System (ADS)

Liu, Wenlong; Liu, Ming; Zhang, Ruyi; Ma, Rong; Wang, Hong

2017-10-01

Epitaxial tetragonal Fe-doped Hf0.95Fe0.05O2 (FHO) thin films with various thicknesses were deposited on (001)-oriented NdCaAlO4 (NCAO) substrates by using a pulsed laser deposition (PLD) system. The crystal structure and epitaxial nature of the FHO thin films were confirmed by typical x-ray diffraction (XRD) θ-2θ scan and reciprocal space mapping (RSM). The results indicate that two sets of lattice sites exist with two different crystal orientations [(001) and (100)] in the thicker FHO thin films. Further, the intensity of the (100) direction increases with the increase in thicknesses, which should have a significant effect on the anisotropic magnetization of the FHO thin films. Meanwhile, all the FHO thin films possess a tetragonal phase structure. An anisotropy behavior in magnetization has been observed in the FHO thin films. The anisotropic magnetization of the FHO thin films is slowly weakened as the thickness increases. Meanwhile, the saturation magnetization (Ms) of both in-plane and out-of-plane decreases with the increase in the thickness. The change in the anisotropic magnetization and Ms is attributed to the crystal lattice and the variation in the valence of Fe ions. These results indicate that the thickness-modulated anisotropic ferromagnetism of the tetragonal FHO epitaxial thin films is of potential use for the integration of metal-oxide semiconductors with spintronics.

Effect of geometry on hydrodynamic film thickness

NASA Technical Reports Server (NTRS)

Brewe, D. E.; Hamrock, B. J.; Taylor, C. M.

1978-01-01

The influence of geometry on the isothermal hydrodynamic film separating two rigid solids was investigated. Pressure-viscosity effects were not considered. The minimum film thickness is derived for fully flooded conjunctions by using the Reynolds conditions. It was found that the minimum film thickness had the same speed, viscosity, and load dependence as Kapitza's classical solution. However, the incorporation of Reynolds boundary conditions resulted in an additional geometry effect. Solutions using the parabolic film approximation are compared with those using the exact expression for the film in the analysis. Contour plots are shown that indicate in detail the pressure developed between the solids.

Effect of geometry on hydrodynamic film thickness

NASA Technical Reports Server (NTRS)

Brewe, D. E.; Hamrock, B. J.; Taylor, C. M.

1978-01-01

The influence of geometry on the isothermal hydrodynamic film separating two rigid solids was investigated. Pressure-viscosity effects were not considered. The minimum film thickness is derived for fully flooded conjunctions by using the Reynolds boundary conditions. It was found that the minimum film thickness had the same speed, viscosity, and load dependence as Kapitza's classical solution. However, the incorporation of Reynolds boundary conditions resulted in an additional geometry effect. Solutions using the parabolic film approximation are compared with those using the exact expression for the film in the analysis. Contour plots are shown that indicate in detail the pressure developed between the solids.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bobbitt, Jonathan M.; Mendivelso-Pérez, Deyny; Smith, Emily A.

A scanning angle (SA) Raman spectroscopy method was developed to simultaneously measure the chemical composition and thickness of waveguide mixed polymer films with varying fractional compositions. In order to test the method, six films of polystyrene-block-poly(methyl methacrylate), some mixed with poly(methyl methacrylate) homopolymer (PS-b-PMMA:PMMA), and two films of poly(2-vinylnapthalene)-block-poly(methyl methacrylate) (P2VN-b-PMMA) were prepared. The film thickness ranged from 495 to 971 nm. The chemical composition and thickness of PS-b-PMMA:PMMA films was varied by the addition of the PMMA homopolymer and annealing the films in toluene. SA Raman peak amplitude ratios (1001 cm -1 for PS, 812 cm -1 for PMMA,more » and 1388 cm -1 for P2VN) were used to calculate the refractive index of the polymer film, an input parameter in calculations of the sum square electric field (SSEF). The film thickness was determined by SSEF models of the experimental Raman amplitudes versus the incident angle of light. The average film thickness determined by the developed SA Raman spectroscopy method was within 5% of the value determined by optical profilometry. In conclusion, SA Raman spectroscopy will be useful for in situ label-free analyses of mixed polymer waveguide films.« less

Thickness Limit for Alignment of Block Copolymer Films Using Solvent Vapor Annealing with Shear

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Chao; Cavicchi, Kevin A.; Li, Ruipeng

The swelling and deswelling of a cross-linked polydimethylsiloxane (PDMS) pad adhered to a block copolymer (BCP) film during solvent vapor annealing (SVA) provides sufficient shear force to produce highly aligned domains over macroscopic dimensions in thin films. Here in this paper, we examine how far this alignment can propagate through the thickness of a BCP film to understand the limits for efficacy of the SVA-S (SVA with shear) process. Films of cylinder-forming polystyrene-block-polyisoprene-block-polystyrene (SIS) ranging from 100 nm to more than 100 μm are examined using the same processing conditions. The SIS surface in contact with the PDMS is alwaysmore » well-aligned, with Herman’s orientation parameter (S) exceeding 0.9 as determined from AFM micrographs, but the bottom surface in contact with the silicon wafer is not aligned for the thickest films. The average orientation through the film thickness was determined by transmission small-angle X-ray scattering (SAXS), with S decreasing gradually with increasing thickness for SIS films thinner than 24 μm, but S remains >0.8. S precipitously decreases for thicker films. A stop-etch-image approach allows the gradient in orientation through the thickness to be elucidated. The integration of this local orientation profile agrees with the average S obtained from SAXS. These results demonstrate the effective alignment of supported thick BCP films of order 10 μm, which could be useful for BCP coatings for optical applications.« less

Thickness Limit for Alignment of Block Copolymer Films Using Solvent Vapor Annealing with Shear

DOE PAGES

Zhang, Chao; Cavicchi, Kevin A.; Li, Ruipeng; ...

2018-05-23

The swelling and deswelling of a cross-linked polydimethylsiloxane (PDMS) pad adhered to a block copolymer (BCP) film during solvent vapor annealing (SVA) provides sufficient shear force to produce highly aligned domains over macroscopic dimensions in thin films. Here in this paper, we examine how far this alignment can propagate through the thickness of a BCP film to understand the limits for efficacy of the SVA-S (SVA with shear) process. Films of cylinder-forming polystyrene-block-polyisoprene-block-polystyrene (SIS) ranging from 100 nm to more than 100 μm are examined using the same processing conditions. The SIS surface in contact with the PDMS is alwaysmore » well-aligned, with Herman’s orientation parameter (S) exceeding 0.9 as determined from AFM micrographs, but the bottom surface in contact with the silicon wafer is not aligned for the thickest films. The average orientation through the film thickness was determined by transmission small-angle X-ray scattering (SAXS), with S decreasing gradually with increasing thickness for SIS films thinner than 24 μm, but S remains >0.8. S precipitously decreases for thicker films. A stop-etch-image approach allows the gradient in orientation through the thickness to be elucidated. The integration of this local orientation profile agrees with the average S obtained from SAXS. These results demonstrate the effective alignment of supported thick BCP films of order 10 μm, which could be useful for BCP coatings for optical applications.« less

Effect of Al2O3 insulator thickness on the structural integrity of amorphous indium-gallium-zinc-oxide based thin film transistors.

PubMed

Kim, Hak-Jun; Hwang, In-Ju; Kim, Youn-Jea

2014-12-01

The current transparent oxide semiconductors (TOSs) technology provides flexibility and high performance. In this study, multi-stack nano-layers of TOSs were designed for three-dimensional analysis of amorphous indium-gallium-zinc-oxide (a-IGZO) based thin film transistors (TFTs). In particular, the effects of torsional and compressive stresses on the nano-sized active layers such as the a-IGZO layer were investigated. Numerical simulations were carried out to investigate the structural integrity of a-IGZO based TFTs with three different thicknesses of the aluminum oxide (Al2O3) insulator (δ = 10, 20, and 30 nm), respectively, using a commercial code, COMSOL Multiphysics. The results are graphically depicted for operating conditions.

Thickness-dependent magnetic and electrical transport properties of epitaxial La 0.7Sr 0.3CoO 3 films

DOE PAGES

Li, Binzhi; Chopdekar, Rajesh V.; Kane, Alexander M.; ...

2017-04-04

The thickness-dependent magnetic and electrical transport properties of nearly strain-free La 0.7Sr 0.3CoO 3 (LSCO) films grown on (001)-oriented (LaAlO 3 ) 0.3 (Sr 2AlTaO 6) 0.7 substrates were systematically studied. A crossover from ferromagnetic/metallic to non-magnetic/insulating behavior occurs at a critical thickness (~8 nm) that is significantly smaller than LSCO films under larger strains in reported literature. X-ray absorption measurements revealed that the difference of functional properties at reduced film thicknesses was accompanied by changes in the valence state of Co ions at the film/substrate interface.

Investigation of percolation thickness of sputter coated thin NiCr films on clear float glass

NASA Astrophysics Data System (ADS)

Erkan, Selen; Arpat, Erdem; Peters, Sven

2017-11-01

Percolation thickness of reactively sputtered nickel chromium (NiCr) thin films is reported in this study. Nickel-chromium films with the thicknesses in between 1 and 10 nm were deposited on 4 mm clear glass substrate by dc magnetron sputtering. Optical properties such as refractive index, extinction coefficient and also sheet resistance, carrier concentration and mobility of NiCr films were determined by a combination of variable-angle spectroscopic ellipsometry and four point probe measurements. We show both the percolation phenomena in atmosphere and critical percolation thickness for thin NiCr films by both electrical and optical techniques. The two techniques gave consistent results with each other.

Thick film hydrogen sensor

DOEpatents

Hoffheins, Barbara S.; Lauf, Robert J.

1995-01-01

A thick film hydrogen sensor element includes an essentially inert, electrically-insulating substrate having deposited thereon a thick film metallization forming at least two resistors. The metallization is a sintered composition of Pd and a sinterable binder such as glass frit. An essentially inert, electrically insulating, hydrogen impermeable passivation layer covers at least one of the resistors.

Thick film hydrogen sensor

DOEpatents

Hoffheins, B.S.; Lauf, R.J.

1995-09-19

A thick film hydrogen sensor element includes an essentially inert, electrically-insulating substrate having deposited thereon a thick film metallization forming at least two resistors. The metallization is a sintered composition of Pd and a sinterable binder such as glass frit. An essentially inert, electrically insulating, hydrogen impermeable passivation layer covers at least one of the resistors. 8 figs.

Dynamic Behavior of Spiral-Groove and Rayleigh-Step Self-Acting Face Seals

NASA Technical Reports Server (NTRS)

Dirusso, Eliseo

1984-01-01

Tests were performed to determine the dynamic behavior and establish baseline dynamic data for five self-acting face seals employing Rayleigh-step lift-pads and inward pumping as well as outward-pumping spiral grooves for the lift-generating mechanism. The primary parameters measured in the tests were film thickness, seal seat axial motion, and seal frictional torque. The data show the dynamic response of the film thickness to the motion of the seal seat. The inward-pumping spiral-groove seals exhibited a high-amplitude film thickness vibratory mode with a frequency of four times the shaft speed. This mode was not observed in the other seals tested. The tests also revealed that high film thickness vibration amplitude produces considerably higher average film thickness than do low amplitude film thickness vibrations. The seals were tested at a constant face load of 73 N (16.4 lb) with ambient air at room temperature and atmospheric pressure as the fluid medium. The test speed range was from 7000 to 17000 rpm. Seal tangential speed range was 34.5 to 83.7 m/sec (113 to 274 ft/sec).

Novel behaviors of anomalous Hall effect in TbFeCo ferrimagnetic thin films

NASA Astrophysics Data System (ADS)

Ando, Ryo; Komine, Takashi; Sato, Shiori; Kaneta, Shingo; Hara, Yoshiaki

2018-05-01

We investigate the temperature dependence and the thickness dependence of anomalous Hall effect (AHE) of TbFeCo ultra-thin films under high magnetic field. The sign change on temperature dependence of AHE in 20nm-thick TbFeCo film with rare-earth (RE) rich composition was observed. The AHE sign at low temperature is negative while it gradually becomes positive as the temperature increases. Moreover, the AHE sign for 5nm-thick TbFeCo film remains positive while that for 50nm-thick TbFeCo film remains negative at temperature in the range from 5 K to 400 K. The similar thickness dependence of AHE in TM-rich samples was also observed. From the mean-field approximation, the sign change temperature in AHE is related to the compensation temperature and the existence of interfacial region, which has the TM-rich composition and the weak anisotropy. Therefore, We clarified that the novel behavior of AHE sign changes in TbFeCo thin films with different thickness can be explained by the interfacial layer with weak anisotropy and two phase model.

Processing effects on microstructure, percolation and resistive sensor properties of nickel-zirconium oxide cermet films on silicon substrates

NASA Astrophysics Data System (ADS)

Sundeen, John Edward, Jr.

Thin Ni-ZrO2 cermet films were developed on silicon substrates using solution based, metallo-organic deposition (MOD) technique. The nickel based cermet films on silicon are of interest for heater, temperature and flow sensor devices, particularly in automotive or aerospace applications at UP to 250°C. In this study, precursors for the NiO-ZrO2 composite films were derived from metal carboxylate and nitrate based solutions. Composition and heat treatment conditions were the main process variables for controlling the structure, particle size and morphology, on which the electrical properties depend. Electrical resistance behavior was studied for Ni-ZrO2 films with 25--78 vol.% Ni content. This Ni amount exceeds the percolation threshold for conduction. The dependence of the resistance on individual processing variables, including film thickness, ambient flow rate, sintering temperature and time, and specimen geometry was studied. Electrical characterization included establishing the percolative resistive behavior in the MOD Ni-ZrO2 films. A resistive percolation threshold (pc) at ˜25 vol.% Ni was found for 800°C sintered, 1mum thick Ni-ZrO2 films. Existing models including the general effective media (GEM) percolation equation, and mixture rules were used to develop a predictive expression for Ni-ZrO2 film resistance as a function of composition. Kinetic analysis of particle size in the 55 vol.% Ni cermet films was directly correlated to the sheet resistance (Rs) of the films. The temperature coefficient of resistance (TCR) was also correlated to R s, by the equation: (TCR)alpha = alphao - betaR s. These electrical characteristics make the films suitable for use as gas flow and temperature sensors. Calculated figure of merit (rho-TCR), values for the MOD Ni-ZrO2 films Compared favorably to commercial Pt and Ni based thin and thick film formulations used for heaters and thermal sensors. An added advantage of the MOD Ni-ZrO2, compared to the non-linear behavior of Ni, was that film resistance response to temperature is highly linear over the temperature range of 20--160°C. Select films could be heated to 45--100°C with a low (I2R) power input of 400mW-2W. Then films demonstrated stable hot resistance, high sensitivity and rapid response to gas flow. Significant accomplishments from this work included the development of: (a) MOD derived cermet films of 40--78 vol.% Ni, with high positive TCR of 2600--4250ppm/°C and Rs of 2.5--60%O/□/1mum which are highly suitable for thermal sensing applications, (b) A simple mixture rule rho = rhoo - m·VNi describing the film resistivity with composition; and (c) Expressions correlating film TCR and resistance to sintering time and temperature using particle growth kinetics.

Super Oxygen and Improved Water Vapor Barrier of Polypropylene Film with Polyelectrolyte Multilayer Nanocoatings.

PubMed

Song, Yixuan; Tzeng, Ping; Grunlan, Jaime C

2016-06-01

Biaxially oriented polypropylene (BOPP) is widely used in packaging. Although its orientation increases mechanical strength and clarity, BOPP suffers from a high oxygen transmission rate (OTR). Multilayer thin films are deposited from water using layer-by-layer (LbL) assembly. Polyethylenimine (PEI) is combined with either poly(acrylic acid) (PAA) or vermiculite (VMT) clay to impart high oxygen barrier. A 30-bilayer PEI/VMT nanocoating (226 nm thick) improves the OTR of 17.8 μm thick BOPP by more than 30X, rivaling most inorganic coatings. PEI/PAA multilayers achieve comparable barrier with only 12 bilayers due to greater thickness, but these films exhibit increased oxygen permeability at high humidity. The PEI/VMT coatings actually exhibit improved oxygen barrier at high humidity (and also improve moisture barrier by more than 40%). This high barrier BOPP meets the criteria for sensitive food and some electronics packaging applications. Additionally, this water-based coating technology is cost effective and provides an opportunity to produce high barrier polypropylene film on an industrial scale. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

'One-component' ultrathin multilayer films based on poly(vinyl alcohol) as stabilizing coating for phenytoin-loaded liposomes.

PubMed

Zasada, Katarzyna; Łukasiewicz-Atanasov, Magdalena; Kłysik, Katarzyna; Lewandowska-Łańcucka, Joanna; Gzyl-Malcher, Barbara; Puciul-Malinowska, Agnieszka; Karewicz, Anna; Nowakowska, Maria

2015-11-01

Ultrathin "one-component" multilayer polymeric films for potential biomedical applications were designed based on polyvinyl alcohol,-a non-toxic, fully degradable synthetic polymer. Good uniformity of the obtained film and adequate adsorption properties of the polymeric layers were achieved by functional modification of the polymer, which involved synthesis of cationic and anionic derivatives. Synthesized polymers were characterized by FTIR, NMR spectroscopy, dynamic light scattering measurements and elemental analysis. The layer by layer assembly technique was used to build up a multilayer film and this process was followed using UV-Vis spectroscopy and ellipsometry. The morphology and thickness of the obtained multilayered film material was evaluated by atomic force microscopy (AFM). Preliminary studies on the application of the obtained multilayer film for coating of liposomal nanocarriers containing phenytoin, an antiarrhythmic drug, were performed. The coating effectively stabilizes liposomes and the effect increases with an increasing number of deposited layers until the polymeric film reaches the optimal thickness. The obtained release profiles suggest that bilayer-coated liposomes release phenytoin less rapidly than uncoated ones. The cytotoxicity studies performed for all obtained nanocarriers confirmed that none of them has negative effect on cell viability. All of the performed experiments suggest that liposomes coated with ultrathin film obtained from PVA derivatives can be attractive drug nanocarriers. Copyright © 2015 Elsevier B.V. All rights reserved.

Ellipsometry-based combination of isothermal sorption-desorption measurement and temperature programmed desorption technique: A probe for interaction of thin polymer films with solvent vapor.

PubMed

Efremov, Mikhail Yu; Nealey, Paul F

2018-05-01

An environmental chamber equipped with an in situ spectroscopic ellipsometer, programmatic vapor pressure control, and variable temperature substrate holder has been designed for studying polymer coating behavior during an exposure to a solvent vapor and also for probing the residual solvent in the film afterwards. Both sorption-desorption cycle at a constant temperature and temperature programmed desorption (TPD) of the residual solvent manifest themselves as a change of the film thickness. Monitoring of ellipsometric angles of the coating allows us to determine the thickness as a function of the vapor pressure or sample temperature. The solvent vapor pressure is precisely regulated by a computer-controlled pneumatics. TPD spectra are recorded during heating of the film in an oil-free vacuum. The vapor pressure control system is described in detail. The system has been tested on 6-170 nm thick polystyrene, poly(methyl methacrylate), and poly(2-vinyl pyridine) films deposited on silicon substrates. Liquid toluene, water, ethanol, isopropanol, cyclohexane, 1,2-dichloroethane, and chlorobenzene were used to create a vapor atmosphere. Typical sorption-desorption and TPD curves are shown. The instrument achieves sub-monolayer sensitivity for adsorption studies on flat surfaces. Polymer-solvent vapor systems with strong interaction demonstrate characteristic absorption-desorption hysteresis spanning from vacuum to the glass transition pressure. Features on the TPD curves can be classified as either glass transition related film contraction or low temperature broad contraction peak. Typical absorption-desorption and TPD dependencies recorded for the 6 nm thick polystyrene film demonstrate the possibility to apply the presented technique for probing size effects in extremely thin coatings.

Ellipsometry-based combination of isothermal sorption-desorption measurement and temperature programmed desorption technique: A probe for interaction of thin polymer films with solvent vapor

NASA Astrophysics Data System (ADS)

Efremov, Mikhail Yu.; Nealey, Paul F.

2018-05-01

An environmental chamber equipped with an in situ spectroscopic ellipsometer, programmatic vapor pressure control, and variable temperature substrate holder has been designed for studying polymer coating behavior during an exposure to a solvent vapor and also for probing the residual solvent in the film afterwards. Both sorption-desorption cycle at a constant temperature and temperature programmed desorption (TPD) of the residual solvent manifest themselves as a change of the film thickness. Monitoring of ellipsometric angles of the coating allows us to determine the thickness as a function of the vapor pressure or sample temperature. The solvent vapor pressure is precisely regulated by a computer-controlled pneumatics. TPD spectra are recorded during heating of the film in an oil-free vacuum. The vapor pressure control system is described in detail. The system has been tested on 6-170 nm thick polystyrene, poly(methyl methacrylate), and poly(2-vinyl pyridine) films deposited on silicon substrates. Liquid toluene, water, ethanol, isopropanol, cyclohexane, 1,2-dichloroethane, and chlorobenzene were used to create a vapor atmosphere. Typical sorption-desorption and TPD curves are shown. The instrument achieves sub-monolayer sensitivity for adsorption studies on flat surfaces. Polymer-solvent vapor systems with strong interaction demonstrate characteristic absorption-desorption hysteresis spanning from vacuum to the glass transition pressure. Features on the TPD curves can be classified as either glass transition related film contraction or low temperature broad contraction peak. Typical absorption-desorption and TPD dependencies recorded for the 6 nm thick polystyrene film demonstrate the possibility to apply the presented technique for probing size effects in extremely thin coatings.

Nucleation-controlled low-temperature solid-phase crystallization for Sn-doped polycrystalline-Ge film on insulator with high carrier mobility (˜550 cm2/V s)

NASA Astrophysics Data System (ADS)

Xu, Chang; Gao, Hongmiao; Sugino, Takayuki; Miyao, Masanobu; Sadoh, Taizoh

2018-06-01

High-speed thin-film transistors (TFTs) are required to develop the next generation of electronics, such as three-dimensional large-scale integrated circuits and advanced system-in-displays. For this purpose, high-carrier-mobility semiconductor films on insulator structures should be fabricated with low-temperature processing conditions (≤500 °C). To achieve this, we investigate solid-phase crystallization of amorphous-GeSn (a-GeSn) films (Sn concentration: 2% and thickness: 50-200 nm) on insulating substrates, where thin a-Si under-layers (thickness: 0-20 nm) are introduced between a-GeSn films and insulating substrates. The GeSn films are polycrystallized by annealing (450 °C, 20 h) for all samples irrespective of a-GeSn and a-Si thickness conditions, while the Si films remain amorphous. Analysis of crystal structures of GeSn films (thickness: 50 nm) reveals that grain sizes decrease from ˜10 μm to 2-3 μm by the introduction of a-Si under-layers (thickness: 3-20 nm). This phenomenon is attributed to the change in dominant nucleation sites from the interface to the bulk, which significantly decreases grain-boundary scattering of carriers through a decrease in the barrier heights at grain boundaries. Bulk-nucleation further becomes dominant by increasing the GeSn film thickness. As a result, a high carrier mobility of ˜550 cm2/V s is realized for GeSn films (thickness: 100 nm) grown with a-Si under-layers. This mobility is the largest among ever reported data for Ge and GeSn grown on an insulator. This technique will facilitate realization of high-speed TFTs for use in the next generation of electronics.

Suppression of superconductivity in epitaxial MgB2 ultrathin films

NASA Astrophysics Data System (ADS)

Zhang, Chen; Wang, Yue; Wang, Da; Zhang, Yan; Liu, Zheng-Hao; Feng, Qing-Rong; Gan, Zi-Zhao

2013-07-01

MgB2 ultrathin films have potential to make sensitive superconducting devices such as superconducting single-photon detectors working at relatively high temperatures. We have grown epitaxial MgB2 films in thicknesses ranging from about 40 nm to 6 nm by using the hybrid physical-chemical vapor deposition method and performed electrical transport measurements to study the thickness dependence of the superconducting critical temperature Tc. With reducing film thickness d, although a weak depression of the Tc has been observed, which could be attributed to an increase of disorder (interband impurity scattering) in the film, the Tc retains close to the bulk value of MgB2 (39 K), being about 35 K in the film of 6 nm thick. We show that this result, beneficial to the application of MgB2 ultrathin films and in accordance with recent theoretical calculations, is in contrast to previous findings in MgB2 films prepared by other methods such as co-evaporation and molecular-beam epitaxy, where a severe Tc suppression has been observed with Tc about one third of the bulk value in films of ˜5 nm thick. We discuss this apparent discrepancy in experiments and suggest that, towards the ultrathin limit, the different degrees of Tc suppression displayed in currently obtained MgB2 films by various techniques may arise from the different levels of disorder present in the film or different extents of proximity effect at the film surface or film-substrate interface.

Method of fabricating a scalable nanoporous membrane filter

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tringe, Joseph W; Balhorn, Rodney L; Zaidi, Saleem

A method of fabricating a nanoporous membrane filter having a uniform array of nanopores etch-formed in a thin film structure (e.g. (100)-oriented single crystal silicon) having a predetermined thickness, by (a) using interferometric lithography to create an etch pattern comprising a plurality array of unit patterns having a predetermined width/diameter, (b) using the etch pattern to etch frustum-shaped cavities or pits in the thin film structure such that the dimension of the frustum floors of the cavities are substantially equal to a desired pore size based on the predetermined thickness of the thin film structure and the predetermined width/diameter ofmore » the unit patterns, and (c) removing the frustum floors at a boundary plane of the thin film structure to expose, open, and thereby create the nanopores substantially having the desired pore size.« less

Vacuum casting of thick polymeric films

NASA Technical Reports Server (NTRS)

Cuddihy, E. F.; Moacanin, J.

1979-01-01

Bubble formation and layering, which often plague vacuum-evaporated films, are prevented by properly regulating process parameters. Vacuum casting may be applicable to forming thick films of other polymer/solvent solutions.

Lag and light-transfer characteristics of amorphous selenium photoconductive film with tellurium-doped layer

NASA Astrophysics Data System (ADS)

Park, Wug-Dong; Tanioka, Kenkichi

2016-07-01

Amorphous selenium (a-Se) high-gain avalanche rushing amorphous photoconductor (HARP) films have been used for highly sensitive imaging devices. To study a-Se HARP films for a solid-state image sensor, current-voltage, lag, spectral response, and light-transfer characteristics of 0.4-µm-thick a-Se HARP films are investigated. Also, to clarify a suitable Te-doped a-Se layer thickness in the a-Se photoconductor, we considered the effects of Te-doped layer thickness on the lag, spectral response, and light-transfer characteristics of 0.4-µm-thick a-Se HARP films. The threshold field, at which avalanche multiplication occurs in the a-Se HARP targets, decreases when the Te-doped layer thickness increases. The lag of 0.4-µm-thick a-Se HARP targets with Te-doped layers is higher than that of the target without Te doping. The lag of the targets with Te-doped layers is caused by the electrons trapped in the Te-doped layers within the 0.4-µm-thick a-Se HARP films. From the results of the spectral response measurement of about 15 min, the 0.4-µm-thick a-Se HARP targets with Te-doped layers of 90 and 120 nm are observed to be unstable owing to the electrons trapped in the Te-doped a-Se layer. From the light-transfer characteristics of 0.4-µm-thick a-Se HARP targets, as the slope at the operating point of signal current-voltage characteristics in the avalanche mode increases, the γ of the a-Se HARP targets decreases. Considering the effects of dark current on the lag and spectral response characteristics, a Te-doped layer of 60 nm is suitable for 0.4-µm-thick a-Se HARP films.

Color filters based on a nanoporous Al-AAO resonator featuring structure tolerant color saturation.

PubMed

Yue, Wenjing; Li, Yang; Wang, Cong; Yao, Zhao; Lee, Sang-Shin; Kim, Nam-Young

2015-10-19

Reflection type subtractive tri-color filters, enabling metal-thickness tolerant high color saturation, were proposed and demonstrated capitalizing on a nanoporous metal-dielectric-metal (MDM) resonant structure, which comprises a cavity made of self-assembled nanoporous anodic aluminum oxide (AAO), sandwiched between an Al film of the same nanoporous configuration and a highly reflective aluminum (Al) substrate. For the proposed filter, the output color was easily determined by controlling the resonance wavelength via the thickness of the porous AAO cavity. In particular, the spectral response was deemed to exhibit a near-zero resonant dip, thereby achieving enhanced color saturation, which was stably maintained irrespective of the thickness of the porous Al film, due to its reduced effective refractive index. In order to manufacture the proposed color filters on a large scale, a porous Al film of hexagonal lattice configuration was integrated with an identically porous self-assembled AAO layer, which has been grown on an Al substrate. For the realized tri-color filters for cyan, magenta, and yellow (CMY), having a 15-nm Al film, near-zero reflection dips were observed to be centered at the wavelengths of 436, 500, and 600 nm, respectively. The resulting enhanced color saturation was stably maintained even though the variations were as large as 10 nm in the metal thickness.

Fast Response and High Sensitivity of ZnO Nanowires-Cobalt Phthalocyanine Heterojunction Based H2S Sensor.

PubMed

Kumar, Ashwini; Samanta, Soumen; Singh, Ajay; Roy, Mainak; Singh, Surendra; Basu, Saibal; Chehimi, Mohmad M; Roy, Kallol; Ramgir, Niranjan; Navaneethan, M; Hayakawa, Y; Debnath, Anil K; Aswal, Dinesh K; Gupta, Shiv K

2015-08-19

The room temperature chemiresistive response of n-type ZnO nanowire (ZnO NWs) films modified with different thicknesses of p-type cobalt phthalocyanine (CoPc) has been studied. With increasing thickness of CoPc (>15 nm), heterojunction films exhibit a transition from n- to p-type conduction due to uniform coating of CoPc on ZnO. The heterojunction films prepared with a 25 nm thick CoPc layer exhibit the highest response (268% at 10 ppm of H2S) and the fastest response (26 s) among all samples. The X-ray photoelectron spectroscopy and work function measurements reveal that electron transfer takes place from ZnO to CoPc, resulting in formation of a p-n junction with a barrier height of 0.4 eV and a depletion layer width of ∼8.9 nm. The detailed XPS analysis suggests that these heterojunction films with 25 nm thick CoPc exhibit the least content of chemisorbed oxygen, enabling the direct interaction of H2S with the CoPc molecule, and therefore exhibit the fastest response. The improved response is attributed to the high susceptibility of the p-n junctions to the H2S gas, which manipulates the depletion layer width and controls the charge transport.

Physical Evaluation of PVA/Chitosan Film Blends with Glycerine and Calcium Chloride

NASA Astrophysics Data System (ADS)

Nugraheni, A. D.; Purnawati, D.; Kusumaatmaja, A.

2018-04-01

PVA/chitosan film has been fabricated by using drop casting method. PVA/chitosan film is produced by dissolving 2% (w/v) PVA solution and 2% (w/v) chitosan solution. PVA/chitosan film is produced with weight ratio variation (w/w) 100/0, 75/25, 50/50 and 0/100. The film is fabricated using drop casting method in Petry dish with diameter 11 cm at room temperature and RH 50%–60% during seven days. The mechanical properties were characterized by using Universal Technical Machine (UTM) and UV-Vis to understand the physical properties of weight ratio (w/w) of PVA/Chitosan film by addition of plasticizer and calcium chloride. The film thickness tends to decrease with PVA content. The addition of chitosan will increase film thickness, and it will decrease swelling index, elongation (%), and transmittance of UV rays. The additions of plasticizer to PVA/Chitosan film will increase film thickness and elongation (%), and it will decrease swelling index, tensile strength and transmittance of UV rays. The crosslink of PVA/Chitosan film with calcium chloride will decrease film thickness, swelling index, elongation (%) and transmittance of UV rays, and increase tensile strength.

Large-Area WS2 Film with Big Single Domains Grown by Chemical Vapor Deposition

NASA Astrophysics Data System (ADS)

Liu, Pengyu; Luo, Tao; Xing, Jie; Xu, Hong; Hao, Huiying; Liu, Hao; Dong, Jingjing

2017-10-01

High-quality WS2 film with the single domain size up to 400 μm was grown on Si/SiO2 wafer by atmospheric pressure chemical vapor deposition. The effects of some important fabrication parameters on the controlled growth of WS2 film have been investigated in detail, including the choice of precursors, tube pressure, growing temperature, holding time, the amount of sulfur powder, and gas flow rate. By optimizing the growth conditions at one atmospheric pressure, we obtained tungsten disulfide single domains with an average size over 100 μm. Raman spectra, atomic force microscopy, and transmission electron microscopy provided direct evidence that the WS2 film had an atomic layer thickness and a single-domain hexagonal structure with a high crystal quality. And the photoluminescence spectra indicated that the tungsten disulfide films showed an evident layer-number-dependent fluorescence efficiency, depending on their energy band structure. Our study provides an important experimental basis for large-area, controllable preparation of atom-thick tungsten disulfide thin film and can also expedite the development of scalable high-performance optoelectronic devices based on WS2 film.

Regulation of the forming process and the set voltage distribution of unipolar resistance switching in spin-coated CoFe2O4 thin films.

PubMed

Mustaqima, Millaty; Yoo, Pilsun; Huang, Wei; Lee, Bo Wha; Liu, Chunli

2015-01-01

We report the preparation of (111) preferentially oriented CoFe2O4 thin films on Pt(111)/TiO2/SiO2/Si substrates using a spin-coating process. The post-annealing conditions and film thickness were varied for cobalt ferrite (CFO) thin films, and Pt/CFO/Pt structures were prepared to investigate the resistance switching behaviors. Our results showed that resistance switching without a forming process is preferred to obtain less fluctuation in the set voltage, which can be regulated directly from the preparation conditions of the CFO thin films. Therefore, instead of thicker film, CFO thin films deposited by two times spin-coating with a thickness about 100 nm gave stable resistance switching with the most stable set voltage. Since the forming process and the large variation in set voltage have been considered as serious obstacles for the practical application of resistance switching for non-volatile memory devices, our results could provide meaningful insights in improving the performance of ferrite material-based resistance switching memory devices.

Fabrication of solution processed 3D nanostructured CuInGaS₂ thin film solar cells.

PubMed

Chu, Van Ben; Cho, Jin Woo; Park, Se Jin; Hwang, Yun Jeong; Park, Hoo Keun; Do, Young Rag; Min, Byoung Koun

2014-03-28

In this study we demonstrate the fabrication of CuInGaS₂ (CIGS) thin film solar cells with a three-dimensional (3D) nanostructure based on indium tin oxide (ITO) nanorod films and precursor solutions (Cu, In and Ga nitrates in alcohol). To obtain solution processed 3D nanostructured CIGS thin film solar cells, two different precursor solutions were applied to complete gap filling in ITO nanorods and achieve the desirable absorber film thickness. Specifically, a coating of precursor solution without polymer binder material was first applied to fill the gap between ITO nanorods followed by deposition of the second precursor solution in the presence of a binder to generate an absorber film thickness of ∼1.3 μm. A solar cell device with a (Al, Ni)/AZO/i-ZnO/CdS/CIGS/ITO nanorod/glass structure was constructed using the CIGS film, and the highest power conversion efficiency was measured to be ∼6.3% at standard irradiation conditions, which was 22.5% higher than the planar type of CIGS solar cell on ITO substrate fabricated using the same precursor solutions.

Cylinder wakes in flowing soap films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vorobieff, P.; Ecke, R.E.; Vorobieff, P.

1999-09-01

We present an experimental characterization of cylinder wakes in flowing soap films. From instantaneous velocity and thickness fields, we find the vortex-shedding frequency, mean-flow velocity, and mean-film thickness. Using the empirical relationship between the Reynolds and Strouhal numbers obtained for cylinder wakes in three dimensions, we estimate the effective soap-film viscosity and its dependence on film thickness. We also compare the decay of vorticity with that in a simple Rankine vortex model with a dissipative term to account for air drag. [copyright] [ital 1999] [ital The American Physical Society

Nanoscale interfacial heat transport of ultrathin epitaxial hetero films: Few monolayer Pb(111) on Si(111)

NASA Astrophysics Data System (ADS)

Witte, T.; Frigge, T.; Hafke, B.; Krenzer, B.; Horn-von Hoegen, M.

2017-06-01

We studied the phononic heat transport from ultrathin epitaxial Pb(111) films across the heterointerface into a Si(111) substrate by means of ultrafast electron diffraction. The thickness of the Pb films was varied from 15 to 4 monolayers. It was found that the thermal boundary conductance σTBC of the heterointerface is independent of the film thickness. We have no evidence for finite size effects: the continuum description of heat transport is still valid, even for the thinnest films of only 4 monolayer thickness.

2 D-Conductivity of thin Pd films condensed at low temperatures

NASA Astrophysics Data System (ADS)

Dumpich, G.; Kristen, H.; Wassermann, E. F.

1983-09-01

Resistance measurements have been made on quenched condensed Pd films with thicknesses between 25 Å and 350Å. The films are prepared under different evaporation conditions by varying the system pressure between 10-8 and 10-5 mbar. Resistance minima with a logarithmic increase of the sheet resistance are observed for thick films ( d<350Å) condensed under intentionally “bad” (10-5 mbar) vacuum conditions, as well as for thin films ( d<50Å) condensed at pressures around 10-8 mbar. Structure investigations show that the thick films are granular. For these films the relation of granularity to 2 D localization is discussed. The thin films are continuous and the logarithmic resistance increase is in agreement with predictions of 2 D-theories.

Enhancement of lower critical field by reducing the thickness of epitaxial and polycrystalline MgB₂ thin films

DOE PAGES

Tan, Teng; Wolak, M. A.; Acharya, Narendra; ...

2015-04-01

For potential applications in superconducting RF cavities, we have investigated the properties of polycrystalline MgB₂ films, including the thickness dependence of the lower critical field Hc₁. MgB₂ thin films were fabricated by hybrid physical-chemical vapor deposition on (0001) SiC substrate either directly (for epitaxial films) or with a MgO buffer layer (for polycrystalline films). When the film thickness decreased from 300 nm to 100 nm, Hc₁ at 5 K increased from around 600 Oe to 1880 Oe in epitaxial films and to 1520 Oe in polycrystalline films. The result is promising for using MgB₂/MgO multilayers to enhance the vortex penetrationmore » field.« less

Unexpected behavior of ultra-thin films of blends of polystyrene/poly(vinyl methyl ether) studied by specific heat spectroscopy

NASA Astrophysics Data System (ADS)

Madkour, Sherif; Szymoniak, Paulina; Schick, Christoph; Schönhals, Andreas

2017-05-01

Specific heat spectroscopy (SHS) employing AC nanochip calorimetry was used to investigate the glassy dynamics of ultra-thin films (thicknesses: 10 nm-340 nm) of a polymer blend, which is miscible in the bulk. In detail, a Poly(vinyl methyl ether) (PVME)/Polystyrene (PS) blend with the composition of 25/75 wt. % was studied. The film thickness was controlled by ellipsometry while the film topography was checked by atomic force microscopy. The results are discussed in the framework of the balance between an adsorbed and a free surface layer on the glassy dynamics. By a self-assembling process, a layer with a reduced mobility is irreversibly adsorbed at the polymer/substrate interface. This layer is discussed employing two different scenarios. In the first approach, it is assumed that a PS-rich layer is adsorbed at the substrate. Whereas in the second approach, a PVME-rich layer is suggested to be formed at the SiO2 substrate. Further, due to the lower surface tension of PVME, with respect to air, a nanometer thick PVME-rich surface layer, with higher molecular mobility, is formed at the polymer/air interface. By measuring the glassy dynamics of the thin films of PVME/PS in dependence on the film thickness, it was shown that down to 30 nm thicknesses, the dynamic Tg of the whole film was strongly influenced by the adsorbed layer yielding a systematic increase in the dynamic Tg with decreasing the film thickness. However, at a thickness of ca. 30 nm, the influence of the mobile surface layer becomes more pronounced. This results in a systematic decrease in Tg with the further decrease of the film thickness, below 30 nm. These results were discussed with respect to thin films of PVME/PS blend with a composition of 50/50 wt. % as well as literature results.

Effect of pectin charge density on formation of multilayer films with chitosan.

PubMed

Kamburova, Kamelia; Milkova, Viktoria; Petkanchin, Ivana; Radeva, Tsetska

2008-04-01

The effect of pectin charge density on the formation of multilayer films with chitosan (PEC/CHI) is studied by means of electro-optics. Pectins of low (21%) and high (71%) degrees of esterification, which are inversely proportional to the pectin charge density, are used to form films on colloidal beta-FeOOH particles at pH 4.0 when the CHI is fully ionized. We find that, after deposition of the first 3-4 layers, the film thickness increases linearly with the number of adsorbed layers. However, the increase in the film thickness is larger when the film is terminated with CHI. Irregular increase of the film thickness is more marked for the PEC with higher density of charge. Oscillation in the electrical polarizability of the film-coated particles with the number of deposited layers is also registered in the PEC/CHI films. The charge balance of the multilayers, calculated from electrical polarizability of the film-coated particles, is positive, with larger excess of positive charge within the film constructed from CHI and less charged PEC. This is attributed to the ability of CHI to diffuse into the film at each deposition step. Despite the CHI diffusion, the film thickness increases linearly due to the dissolution of unstable PEC/CHI complexes from the film surface.

Surface plasmon resonance in electrodynamically coupled Au NPs monolayer/dielectric spacer/Al film nanostructure: tuning by variation of spacer thickness

NASA Astrophysics Data System (ADS)

Yeshchenko, Oleg A.; Kozachenko, Viktor V.; Liakhov, Yuriy F.; Tomchuk, Anastasiya V.; Haftel, Michael; Pinchuk, Anatoliy O.

2017-10-01

Effects of plasmonic coupling between metal nanoparticles and thin metal films separated by thin dielectric film-spacers have been studied by means of light extinction in three-layer planar Au NPs monolayer/dielectric (shellac) film/Al film nanostructure. The influence of coupling on the spectral characteristics of the Au NPs SPR extinction peak has been analyzed with spacer thickness, varied from 3 to 200 nm. The main observed features are a strong red shift (160 nm), and non-monotonical behavior of the magnitude and width of Au NPs SPR, as the spacer thickness decreased. The appearance of an intensive gap mode peak was observed at a spacer thickness smaller than approximately 30 nm, caused by the hybridization of the Au NPs SPR mode and gap mode in the presence of the Al film. Additionally, the appreciable enhancement (5.6 times) of light extinction by the Au NPs monolayer in the presence of Al film has been observed. A certain value of dielectric spacer thickness (70 nm) exists at which such enhancement is maximal.

A H2-evolving photocathode based on direct sensitization of MoS3 with an organic photovoltaic cell

PubMed Central

Bourgeteau, Tiphaine; Tondelier, Denis; Geffroy, Bernard; Brisse, Romain; Laberty-Robert, Christel; Campidelli, Stéphane; de Bettignies, Rémi; Artero, Vincent; Palacin, Serge; Jousselme, Bruno

2013-01-01

An organic solar cell based on a poly-3-hexylthiophene (P3HT): phenyl-C61-butyric acid (PCBM) bulk hetero-junction was directly coupled with molybdenum sulfide resulting in the design of a new type of photocathode for the production of hydrogen. Both the light-harvesting system and the catalyst were deposited by low-cost solution-processed methods, i.e. spin coating and spray coating respectively. Spray-coated MoS3 films are catalytically active in strongly acidic aqueous solutions with the best efficiencies for thicknesses of 40 to 90 nm. The photocathodes display photocurrents higher than reference samples, without catalyst or without coupling with a solar cell. Analysis by gas chromatography confirms the light-induced hydrogen evolution. The addition of titanium dioxide in the MoS3 film enhances electron transport and collection within thick films and therefore the performance of the photocathode. PMID:24404434

Through-thickness thermal conductivity enhancement of graphite film/epoxy composite via short duration acidizing modification

NASA Astrophysics Data System (ADS)

Wang, Han; Wang, Shaokai; Lu, Weibang; Li, Min; Gu, Yizhou; Zhang, Yongyi; Zhang, Zuoguang

2018-06-01

Graphite films have excellent in-plane thermal conductivity but extremely low through-thickness thermal conductivity because of their intrinsic inter-layer spaces. To improve the inter-layer heat transfer of graphite films, we developed a simple interfacial modification with a short duration mixed-acid treatment. The effects of the mixture ratio of sulfuric and nitric acids and treatment time on the through-thickness thermal properties of graphite films were studied. The modification increased the through-thickness thermal conductivity by 27% and 42% for the graphite film and its composite, respectively. X-ray photoelectron spectroscopy, X-ray powder diffraction, and scanning electron microscopy results indicated that the acidification process had two competing effects: the positive contribution made by the enhanced interaction between the graphite layers induced by the functional groups and the negative effect from the destruction of the graphite layers. As a result, an optimal acidification method was found to be sulfuric/nitric acid treatment with a mixture ratio of 3:1 for 15 min. The resultant through-thickness thermal conductivity of the graphite film could be improved to 0.674 W/mK, and the corresponding graphite/epoxy composite shows a through-thickness thermal conductivity of 0.587 W/mK. This method can be directly used for graphite films and their composite fabrication to improve through-thickness thermal conductivity.

Thickness and microstructure effects in the optical and electrical properties of silver thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ding, Guowen, E-mail: gding@intermolecular.com; Clavero, César; Schweigert, Daniel

The optical and electrical response of metal thin films approaching thicknesses in the range of the electron mean free path is highly affected by electronic scattering with the interfaces and defects. Here, we present a theoretical and experimental study on how thickness and microstructure affect the properties of Ag thin films. We are able to successfully model the electrical resistivity and IR optical response using a thickness dependent electronic scattering time. Remarkably, the product of electronic scattering time and resistivity remains constant regardless of the thickness (τx ρ = C), with a value of 59 ± 2 μΩ cm ⋅more » fs for Ag films in the investigated range from 3 to 74 nm. Our findings enable us to develop a theoretically framework that allows calculating the optical response of metal thin films in the IR by using their measured thickness and resistivity. An excellent agreement is found between experimental measurements and predicted values. This study also shows the theoretical lower limit for emissivity in Ag thin films according to their microstructure and thickness. Application of the model presented here will allow rapid characterization of the IR optical response of metal thin films, with important application in a broad spectrum of fundamental and industrial applications, including optical coatings, low-emissivity windows and semiconductor industry.« less

Spin Wave Resonances in La_0.67Ba_0.33MnO_3

NASA Astrophysics Data System (ADS)

Lofland, S. E.; Dominguez, M.; Tyagi, S. D.; Bhagat, S. M.; Kwon, C.; Robson, M. C.; Sharma, R. P.; Ramesh, R.; Venkatesan, T.

1996-03-01

Thin ( ~ 110 nm thick) films of La_0.67Ba_0.33MnO3 (LBMO) were prepared by pulsed laser deposition on LaAlO3 substrates. Some films were grown directly onto LaAlO3 while other films were made by first creating a ~ 80 nm thick buffer layer of SrTiO3 (STO) and then capped with a 20 nm thick layer of STO. X-ray and RBS measurements showed the films to be of high crystalline quality. Film thickness was determined by RBS. Spin wave resonance (SWR) measurements were performed at both 10 and 36 GHz. In both types of films Portis (equally spaced) modes were observed. This indicated a non-uniform magnetization which has a parabolic spatial distribution. However, certain tri-layer films showed Kittel modes which follow the n^2 dependence of the mode number n on the resonance field. From the mode separation and the thickness, we calculate the spin stiffness D(0) to be 47 ± 10 meVÅWith this value of D and the magnetization M, we estimate a spatial variation of the magnetization of ~ 20% for those films which showed Portis modes.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Prakash, Deo; Shaaban, E.R., E-mail: esam_ramadan2008@yahoo.com; Shapaan, M.

Highlights: • Combined experimental and theoretical researches on ZnSe Thin Films. • The film thickness and refractive index were determined using envelope method. • The absorption coefficient and the energy gap were calculated. • Dispersion parameters were determined using Wemple-DiDomenico relation. • The third order susceptibility and nonlinear refractive index were calculated. - Abstract: Zinc selenide (ZnSe) thin films with different thicknesses were evaporated onto glass substrates using the thermal evaporation technique. X-ray diffraction analysis confirmed that both the film and powder have cubic zinc-blende structure. The fundamental optical parameters like absorption coefficient, extinction coefficient and band gap were evaluatedmore » in transparent region of transmittance and reflectance spectrum. The optical transition of the films was found to be allowed, where the energy gap increased from 2.576 to 2.702 eV with increasing film thickness. Also, the refractive index value increase with increasing film thickness. The refractive indices evaluated through envelope method were extrapolated by Cauchy dispersion relationship over the whole spectra range. Additionally, the dispersion of refractive index was determined in terms of Wemple-DiDomenico single oscillator model. Third order susceptibility and nonlinear refractive index were determined for different thickness of ZnSe thin films.« less

Self-Poling of BiFeO3 Thick Films.

PubMed

Khomyakova, Evgeniya; Sadl, Matej; Ursic, Hana; Daniels, John; Malic, Barbara; Bencan, Andreja; Damjanovic, Dragan; Rojac, Tadej

2016-08-03

Bismuth ferrite (BiFeO3) is difficult to pole because of the combination of its high coercive field and high electrical conductivity. This problem is particularly pronounced in thick films. The poling, however, must be performed to achieve a large macroscopic piezoelectric response. This study presents evidence of a prominent and reproducible self-poling effect in few-tens-of-micrometer-thick BiFeO3 films. Direct and converse piezoelectric measurements confirmed that the as-sintered BiFeO3 thick films yield d33 values of up to ∼20 pC/N. It was observed that a significant self-poling effect only appears in cases when the films are heated and cooled through the ferroelectric-paraelectric phase transition (Curie temperature TC ∼ 820 °C). These self-poled films exhibit a microstructure with randomly oriented columnar grains. The presence of a compressive strain gradient across the film thickness cooled from above the TC was experimentally confirmed and is suggested to be responsible for the self-poling effect. Finally, the macroscopic d33 response of the self-poled BiFeO3 film was characterized as a function of the driving-field frequency and amplitude.

Dynamic response of film thickness in spiral-groove face seals

NASA Technical Reports Server (NTRS)

Dirusso, E.

1985-01-01

Tests were performed on an inward- and an outward-pumping spiral-groove face seal to experimentally determine the film thickness response to seal seat motions and to gain insight into the effect of secondary seal friction on film thickness behavior. Film thickness, seal seat axial motion, seal frictional torque, and film axial load were recorded as functions of time. The experiments revealed that for sinusoidal axial oscillations of the seal seat, the primary ring followed the seal seat motion very well. For a skewed seal seat, however, the primary ring did not follow the seal seat motion, and load-carrying capacity was degraded. Secondary seal friction was varied over a wide range to determine its effect on film thickness dynamics. The seals were tested with ambient air at room temperature and atmospheric pressure as the fluid medium. The test speed ranged from 7000 to 20,000 rpm. Seal tangential velocity ranged from 34 to 98 m/sec (113 to 323 ft/sec).

Ferroelectric PLZT thick films grown by poly(1-vinylpyrrolidone-co-vinyl acetate) (PVP/VA)-modified sol-gel process

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hu, Zhongqiang; Ma, Beihai; Li, Meiya

2016-03-01

We report the growth of ferroelectric Pb0.92La0.08Zr0.52Ti0.48O3 (PLZT) thick films using a poly(1-vinylpyrrolidone-co-vinyl acetate) (PVP/VA)-modified sol–gel process. A per-coating thickness of ≈0.66 μm has been demonstrated using PVP/VA-modified solution, which is more than doubled that of the PLZT films grown by PVP-modified method, and nearly 6 times the per-coating thickness of films prepared by conventional sol–gel process. PLZT thick films grown on LNO/Ni substrates exhibited denser microstructure, higher remanent polarization (11 μC/cm 2) and dielectric tunability (45%), lower leakage current density (≈1.2 × 10 -8 A/cm 2), and higher breakdown strength (≈1.6 MV/cm) than those for the samples grown onmore » PtSi substrates. These results demonstrated great potential of using PVP/VA-modified sol–gel process for high power film capacitor applications.« less

Effects of copolymer composition, film thickness, and solvent vapor annealing time on dewetting of ultrathin block copolymer films.

PubMed

Huang, Changchun; Wen, Gangyao; Li, Jingdan; Wu, Tao; Wang, Lina; Xue, Feifei; Li, Hongfei; Shi, Tongfei

2016-09-15

Effects of copolymer composition, film thickness, and solvent vapor annealing time on dewetting of spin-coated polystyrene-block-poly(methyl methacrylate) (PS-b-PMMA) films (<20nm thick) were mainly investigated by atomic force microscopy. Surface chemical analysis of the ultrathin films annealed for different times were performed using X-ray photoelectron spectroscopy and contact angle measurement. With the annealing of acetone vapor, dewetting of the films with different thicknesses occur via the spinodal dewetting and the nucleation and growth mechanisms, respectively. The PS-b-PMMA films rupture into droplets which first coalesce into large ones to reduce the surface free energy. Then the large droplets rupture into small ones to increase the contact area between PMMA blocks and acetone molecules resulting from ultimate migration of PMMA blocks to droplet surface, which is a novel dewetting process observed in spin-coated films for the first time. Copyright © 2016 Elsevier Inc. All rights reserved.

Scaling analysis of field-tuned superconductor-insulator transition in two-dimensional tantalum thin films.

PubMed

Park, Sungyu; Shin, Junghyun; Kim, Eunseong

2017-02-20

The superconductor-insulator (SI) transition in two-dimensional Ta thin films is investigated by controlling both film thickness and magnetic field. An intriguing metallic phase appears between a superconducting and an insulating phase within a range of film thickness and magnetic field. The temperature and electric field scaling analyses are performed to investigate the nature of the SI transition in the thickness-tuned metallic and superconducting samples. The critical exponents product of νz obtained from the temperature scaling analysis is found to be approximately 0.67 in the entire range of film thickness. On the other hand, an apparent discrepancy is measured in the product of ν(z + 1) by the electric filed analysis. The product values are found to be about 1.37 for the superconducting films and about 1.86 for the metallic films respectively. We find that the discrepancy is the direct consequence of electron heating that introduces additional dissipation channels in the metallic Ta films.

Fabrication of large diffractive optical elements in thick film on a concave lens surface.

PubMed

Xie, Yongjun; Lu, Zhenwu; Li, Fengyou

2003-05-05

We demonstrate experimentally the technique of fabricating large diffractive optical elements (DOEs) in thick film on a concave lens surface (mirrors) with precise alignment by using the strategy of double exposure. We adopt the method of double exposure to overcome the difficulty of processing thick photoresist on a large curved substrate. A uniform thick film with arbitrary thickness on a concave lens can be obtained with this technique. We fabricate a large concentric circular grating with a 10-ìm period on a concave lens surface in film with a thickness of 2.0 ìm after development. It is believed that this technique can also be used to fabricate larger DOEs in thicker film on the concave or convex lens surface with precise alignment. There are other potential applications of this technique, such as fabrication of micro-optoelectromechanical systems (MOEMS) or microelectromechanical systems (MEMS) and fabrication of microlens arrays on a large concave lens surface or convex lens surface with precise alignment.

A novel multivariate approach using science-based calibration for direct coating thickness determination in real-time NIR process monitoring.

PubMed

Möltgen, C-V; Herdling, T; Reich, G

2013-11-01

This study demonstrates an approach, using science-based calibration (SBC), for direct coating thickness determination on heart-shaped tablets in real-time. Near-Infrared (NIR) spectra were collected during four full industrial pan coating operations. The tablets were coated with a thin hydroxypropyl methylcellulose (HPMC) film up to a film thickness of 28 μm. The application of SBC permits the calibration of the NIR spectral data without using costly determined reference values. This is due to the fact that SBC combines classical methods to estimate the coating signal and statistical methods for the noise estimation. The approach enabled the use of NIR for the measurement of the film thickness increase from around 8 to 28 μm of four independent batches in real-time. The developed model provided a spectroscopic limit of detection for the coating thickness of 0.64 ± 0.03 μm root-mean square (RMS). In the commonly used statistical methods for calibration, such as Partial Least Squares (PLS), sufficiently varying reference values are needed for calibration. For thin non-functional coatings this is a challenge because the quality of the model depends on the accuracy of the selected calibration standards. The obvious and simple approach of SBC eliminates many of the problems associated with the conventional statistical methods and offers an alternative for multivariate calibration. Copyright © 2013 Elsevier B.V. All rights reserved.

Poly(N-isopropylacrylamide) hydrogel-based shape-adjustable polyimide films triggered by near-human-body temperature.

PubMed

Huanqing Cui; Xuemin Du; Juan Wang; Tianhong Tang; Tianzhun Wu

2016-08-01

Hydrogel-based shape-adjustable films were successfully fabricated via grafting poly(N-isopropylacrylamide) (PNIPAM) onto one side of polyimide (PI) films. The prepared PI-g-PNIPAM films exhibited rapid, reversible, and repeatable bending/unbending property by heating to near-human-body temperature (37 °C) or cooling to 25 °C. The excellent property of PI-g-PNIPAM films resulted from a lower critical solution temperature (LCST) of PNIPAM at about 32 °C. Varying the thickness of PNIPAM hydrogel layer regulated the thermo-responsive shape bending degree and response speed of PI-g-PNIPAM films. The thermo-induced shrinkage of hydrogel layers can tune the curvature of PI films, which have potential applications in the field of wearable and implantable devices.

Soft X-ray imaging of thick carbon-based materials using the normal incidence multilayer optics.

PubMed

Artyukov, I A; Feschenko, R M; Vinogradov, A V; Bugayev, Ye A; Devizenko, O Y; Kondratenko, V V; Kasyanov, Yu S; Hatano, T; Yamamoto, M; Saveliev, S V

2010-10-01

The high transparency of carbon-containing materials in the spectral region of "carbon window" (lambda approximately 4.5-5nm) introduces new opportunities for various soft X-ray microscopy applications. The development of efficient multilayer coated X-ray optics operating at the wavelengths of about 4.5nm has stimulated a series of our imaging experiments to study thick biological and synthetic objects. Our experimental set-up consisted of a laser plasma X-ray source generated with the 2nd harmonics of Nd-glass laser, scandium-based thin-film filters, Co/C multilayer mirror and X-ray film UF-4. All soft X-ray images were produced with a single nanosecond exposure and demonstrated appropriate absorption contrast and detector-limited spatial resolution. A special attention was paid to the 3D imaging of thick low-density foam materials to be used in design of laser fusion targets.

Photoinduced Cross-Linking of Dynamic Poly(disulfide) Films via Thiol Oxidative Coupling.

PubMed

Feillée, Noémi; Chemtob, Abraham; Ley, Christian; Croutxé-Barghorn, Céline; Allonas, Xavier; Ponche, Arnaud; Le Nouen, Didier; Majjad, Hicham; Jacomine, Léandro

2016-01-01

Initially developed as an elastomer with an excellent record of barrier and chemical resistance properties, poly(disulfide) has experienced a revival linked to the dynamic nature of the S-S covalent bond. A novel photobase-catalyzed oxidative polymerization of multifunctional thiols to poly(disulfide) network is reported. Based solely on air oxidation, the single-step process is triggered by the photodecarboxylation of a xanthone acetic acid liberating a strong bicyclic guanidine base. Starting with a 1 μm thick film based on trithiol poly(ethylene oxide) oligomer, the UV-mediated oxidation of thiols to disulfides occurs in a matter of minutes both selectively, i.e., without overoxidation, and quantitatively as assessed by a range of spectroscopic techniques. Thiolate formation and film thickness determine the reaction rates and yield. Spatial control of the photopolymerization serves to generate robust micropatterns, while the reductive cleavage of S-S bridges allows the recycling of 40% of the initial thiol groups. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Ideal glass transitions in thin films: An energy landscape perspective

NASA Astrophysics Data System (ADS)

Truskett, Thomas M.; Ganesan, Venkat

2003-07-01

We introduce a mean-field model for the potential energy landscape of a thin fluid film confined between parallel substrates. The model predicts how the number of accessible basins on the energy landscape and, consequently, the film's ideal glass transition temperature depend on bulk pressure, film thickness, and the strength of the fluid-fluid and fluid-substrate interactions. The predictions are in qualitative agreement with the experimental trends for the kinetic glass transition temperature of thin films, suggesting the utility of landscape-based approaches for studying the behavior of confined fluids.

Thickness-dependent structure and properties of SnS2 thin films prepared by atomic layer deposition

NASA Astrophysics Data System (ADS)

Seo, Wondeok; Shin, Seokyoon; Ham, Giyul; Lee, Juhyun; Lee, Seungjin; Choi, Hyeongsu; Jeon, Hyeongtag

2017-03-01

Tin disulfide (SnS2) thin films were deposited by a thermal atomic layer deposition (ALD) method at low temperatures. The physical, chemical, and electrical characteristics of SnS2 were investigated as a function of the film thickness. SnS2 exhibited a (001) hexagonal plane peak at 14.9° in the X-ray diffraction (XRD) results and an A1g peak at 311 cm-1 in the Raman spectra. These results demonstrate that SnS2 thin films grown at 150 °C showed a crystalline phase at film thicknesses above 11.2 nm. The crystallinity of the SnS2 thin films was evaluated by a transmission electron microscope (TEM). The X-ray photoelectron spectroscopy (XPS) analysis revealed that SnS2 consisted of Sn4+ and S2- valence states. Both the optical band gap and the transmittance of SnS2 decreased as the film thickness increased. The band gap of SnS2 decreased from 3.0 to 2.4 eV and the transmittance decreased from 85 to 32% at a wavelength of 400 nm. In addition, the resistivity of the thin film SnS2 decreased from 1011 to 106 Ω·cm as the film thickness increased.

Stretchable, adhesive and ultra-conformable elastomer thin films.

PubMed

Sato, Nobutaka; Murata, Atsushi; Fujie, Toshinori; Takeoka, Shinji

2016-11-16

Thermoplastic elastomers are attractive materials because of the drastic changes in their physical properties above and below the glass transition temperature (T g ). In this paper, we report that free-standing polystyrene (PS, T g : 100 °C) and polystyrene-polybutadiene-polystyrene triblock copolymer (SBS, T g : -70 °C) thin films with a thickness of hundreds of nanometers were prepared by a gravure coating method. Among the mechanical properties of these thin films determined by bulge testing and tensile testing, the SBS thin films exhibited a much lower elastic modulus (ca. 0.045 GPa, 212 nm thickness) in comparison with the PS thin films (ca. 1.19 GPa, 217 nm thickness). The lower elastic modulus and lower thickness of the SBS thin films resulted in higher conformability and thus higher strength of adhesion to an uneven surface such as an artificial skin model with roughness (R a = 10.6 μm), even though they both have similar surface energies. By analyzing the mechanical properties of the SBS thin films, the elastic modulus and thickness of the thin films were strongly correlated with their conformability to a rough surface, which thus led to a high adhesive strength. Therefore, the SBS thin films will be useful as coating layers for a variety of materials.

Morphogen Electrochemically Triggered Self-Construction of Polymeric Films Based on Mussel-Inspired Chemistry.

PubMed

Maerten, Clément; Garnier, Tony; Lupattelli, Paolo; Chau, Nguyet Trang Thanh; Schaaf, Pierre; Jierry, Loïc; Boulmedais, Fouzia

2015-12-15

Inspired by the strong chemical adhesion mechanism of mussels, we designed a catechol-based electrochemically triggered self-assembly of films based on ethylene glycol molecules bearing catechol groups on both sides and denoted as bis-catechol molecules. These molecules play the role of morphogens and, in contrast to previously investigated systems, they are also one of the constituents, after reaction, of the film. Unable to interact together, commercially available poly(allylamine hydrochloride) (PAH) chains and bis-catechol molecules are mixed in an aqueous solution and brought in contact with an electrode. By application of defined potential cycles, bis-catechol molecules undergo oxidation leading to molecules bearing "reactive" quinone groups which diffuse toward the solution. In this active state, the quinones react with amino groups of PAH through Michael addition and Schiff's base condensation reaction. The application of cyclic voltammetry (CV) between 0 and 500 mV (vs Ag/AgCl, scan rate of 50 mV/s) of a PAH/bis-catechol solution results in a fast self-construction of a film that reaches a thickness of 40 nm after 60 min. The films present a spiky structure which is attributed to the use of bis-functionalized molecules as one component of the films. XPS measurements show the presence of both PAH and bis-catechol cross-linked together in a covalent way. We show that the amine/catechol ratio is an important parameter which governs the film buildup. For a given amine/catechol ratio, it does exist an optimum CV scan rate leading to a maximum of the film thickness as a function of the scan rate.

Film thickness dependence of phase separation and dewetting behaviors in PMMA/SAN blend films.

PubMed

You, Jichun; Liao, Yonggui; Men, Yongfeng; Shi, Tongfei; An, Lijia

2010-09-21

Film thickness dependence of complex behaviors coupled by phase separation and dewetting in blend [poly(methyl methacrylate) (PMMA) and poly(styrene-ran-acrylonitrile) (SAN)] films on silicon oxide substrate at 175 °C was investigated by grazing incidence ultrasmall-angle X-ray scattering (GIUSAX) and in situ atomic force microscopy (AFM). It was found that the dewetting pathway was under the control of the parameter U(q0)/E, which described the initial amplitude of the surface undulation and original thickness of film, respectively. Furthermore, our results showed that interplay between phase separation and dewetting depended crucially on film thickness. Three mechanisms including dewetting-phase separation/wetting, dewetting/wetting-phase separation, and phase separation/wetting-pseudodewetting were discussed in detail. In conclusion, it is relative rates of phase separation and dewetting that dominate the interplay between them.

Thickness dependence of structural and piezoelectric properties of epitaxial Pb(Zr0.52Ti0.48)O3 films on Si and SrTiO3 substrates

NASA Astrophysics Data System (ADS)

Kim, D. M.; Eom, C. B.; Nagarajan, V.; Ouyang, J.; Ramesh, R.; Vaithyanathan, V.; Schlom, D. G.

2006-04-01

We report the structural and longitudinal piezoelectric responses (d33) of epitaxial Pb(Zr0.52Ti0.48)O3 (PZT) films on (001) SrTiO3 and Si substrates in the thickness range of 40nm -4μm. With increasing film thickness the tetragonality of PZT was reduced. The increase in d33 value with increasing film thicknesses was attributed to the reduction of substrate constraints and softening of PZT due to reduced tetragonality. The d33 values of PZT films on Si substrates (˜330pm/V) are higher than those on SrTiO3 substrates (˜200pm /V). The epitaxial PZT films on silicon will lead to the fabrication of high performance piezoelectric microelectromechanical devices.

Fabrication and ferroelectric properties of highly dense lead-free piezoelectric (K0.5Na0.5)NbO3 thick films by aerosol deposition

NASA Astrophysics Data System (ADS)

Ryu, Jungho; Choi, Jong-Jin; Hahn, Byung-Dong; Park, Dong-Soo; Yoon, Woon-Ha; Kim, Ki-Hoon

2007-04-01

Lead-free piezoelectric thick films of (K0.5Na0.5)NbO3 were fabricated by aerosol-deposition method. The thickness of KNN film was 7.1μm and fully dense films were obtained. The dielectric constants ɛ3T/ɛ0 of the as-deposited and annealed films at 1kHz were 116 and 545, respectively, which are higher than any previously reported values for lead-free piezoelectric thin/thick films, either without or with heat treatment. The ferroelectric properties were improved after annealing and the maximum values of Pr=8.1μC/cm3 and Ec=100kV/cm were achieved. These values are markedly superior to those of sintered KNN ceramic counterparts.

Effect of cell thickness on the electrical and optical properties of thin film silicon solar cell

NASA Astrophysics Data System (ADS)

Zaki, A. A.; El-Amin, A. A.

2017-12-01

In this work Electrical and optical properties of silicon thin films with different thickness were measured. The thickness of the Si films varied from 100 to 800 μm. The optical properties of the cell were studied at different thickness. A maximum achievable current density (MACD) generated by a planar solar cell, was measured for different values of the cell thickness which was performed by using photovoltaic (PV) optics method. It was found that reducing the values of the cell thickness improves the open-circuit voltage (VOC) and the fill factor (FF) of the solar cell. The optical properties were measured for thin film Si (TF-Si) at different thickness by using the double beam UV-vis-NIR spectrophotometer in the wavelength range of 300-2000 nm. Some of optical parameters such as refractive index with dispersion relation, the dispersion energy, the oscillator energy, optical band gap energy were calculated by using the spectra for the TF-Si with different thickness.

Ion beam sputter deposited zinc telluride films

NASA Technical Reports Server (NTRS)

Gulino, D. A.

1986-01-01

Zinc telluride is of interest as a potential electronic device material, particularly as one component in an amorphous superlattice, which is a new class of interesting and potentially useful materials. Some structural and electronic properties of ZnTe films deposited by argon ion beam sputter deposition are described. Films (up to 3000 angstroms thick) were deposited from a ZnTe target. A beam energy of 1000 eV and a current density of 4 mA/sq cm resulted in deposition rates of approximately 70 angstroms/min. The optical band gap was found to be approximately 1.1 eV, indicating an amorphous structure, as compared to a literature value of 2.26 eV for crystalline material. Intrinsic stress measurements showed a thickness dependence, varying from tensile for thicknesses below 850 angstroms to compressive for larger thicknesses. Room temperature conductivity measurement also showed a thickness dependence, with values ranging from 1.86 x 10 to the -6th/ohm cm for 300 angstrom film to 2.56 x 10 to the -1/ohm cm for a 2600 angstrom film. Measurement of the temperature dependence of the conductivity for these films showed complicated behavior which was thickness dependent. Thinner films showed at least two distinct temperature dependent conductivity mechanisms, as described by a Mott-type model. Thicker films showed only one principal conductivity mechanism, similar to what might be expected for a material with more crystalline character.

Ion beam sputter deposited zinc telluride films

NASA Technical Reports Server (NTRS)

Gulino, D. A.

1985-01-01

Zinc telluride is of interest as a potential electronic device material, particularly as one component in an amorphous superlattice, which is a new class of interesting and potentially useful materials. Some structural and electronic properties of ZnTe films deposited by argon ion beam sputter depoairion are described. Films (up to 3000 angstroms thick) were deposited from a ZnTe target. A beam energy of 1000 eV and a current density of 4 mA/sq. cm. resulted in deposition rates of approximately 70 angstroms/min. The optical band gap was found to be approximately 1.1 eV, indicating an amorphous structure, as compared to a literature value of 2.26 eV for crystalline material. Intrinsic stress measurements showed a thickness dependence, varying from tensile for thicknesses below 850 angstroms to compressive for larger thicknesses. Room temperature conductivity measurement also showed a thickness dependence, with values ranging from 1.86 x to to the -6/ohm. cm. for 300 angstrom film to 2.56 x 10 to the -1/ohm. cm. for a 2600 angstrom film. Measurement of the temperature dependence of the conductivity for these films showed complicated behavior which was thickness dependent. Thinner films showed at least two distinct temperature dependent conductivity mechanisms, as described by a Mott-type model. Thicker films showed only one principal conductivity mechanism, similar to what might be expected for a material with more crystalline character.

Thickness dependence of the electrical and thermoelectric properties of co-evaporated Sb2Te3 films

NASA Astrophysics Data System (ADS)

Shen, Haishan; Lee, Suhyeon; Kang, Jun-gu; Eom, Tae-Yil; Lee, Hoojeong; Han, Seungwoo

2018-01-01

P-type antimony telluride (Sb2Te3) films of various thicknesses (1-, 6-, 10-, and 16-μm) were deposited on an oxidized Si (100) substrate at 250 °C by effusion cell co-evaporation. Microstructural analysis using X-ray diffraction, scanning electron microscopy, and transmission electron microscopy revealed that the grains of the films grew in a mode in which recrystallization was prevalent and grain growth subdued, in contrast to typical film growth, which is often characterized by grain growth. The resultant microstructure exhibited narrow columnar grains, the preferred orientation of which changed with film growth thickness from (1010) with the 1-μm films to (015) for the 6- and 10-μm films, and finally (110) for the 16-μm films. Carrier mobility and the overall thermoelectric properties of the Sb2Te3 films were affected significantly by changes in the film microstructure; this was attributed to the strong anisotropy of Sb2Te3 regarding electrical conductivity. The highest power factor of 3.3 mW/mK2 was observed for the 1-μm-thick Sb2Te3 film.

Ferromagnetic resonance properties and anisotropy of Ni-Mn-Ga thin films of different thicknesses deposited on Si substrate

DOE Office of Scientific and Technical Information (OSTI.GOV)

Golub, Vladimir; Chernenko, Volodymyr; Reddy, K. M.

2009-04-01

Ni-Mn-Ga films of different thicknesses were deposited onto Si(100) substrates by magnetron sputtering and annealed at 1073 K for 1 h in high vacuum. X-ray diffraction analysis showed the formation of 220 fiber texture perpendicular to the film plane. Magnetic properties of thin films were investigated at room temperature using ferromagnetic resonance (FMR) technique. The dependencies of both the FMR absorption maximum position and resonance linewidth on the direction of the external magnetic field with respect to the film normal were studied. The data analysis showed that the direction of magnetocrystalline anisotropy easy axis in the films makes 45 deg.more » angle with the film normal. The modeling allowed evaluation of the uniaxial anisotropy constant, which is found to increase with thickness of Ni-Mn-Ga films. Uniaxial anisotropy constants were found to be {approx}2.8x10{sup 5} erg/cm{sup 3} for 0.1 and 0.5 {mu}m film thickness, {approx}4.2x10{sup 5} erg/cm{sup 3} for 1 {mu}m film, and {approx}5.1x10{sup 5} erg/cm{sup 3} for 3 {mu}m film.« less

Fracture Resistance of Lithium Disilicate Ceramics Bonded to Enamel or Dentin Using Different Resin Cement Types and Film Thicknesses.

PubMed

Rojpaibool, Thitithorn; Leevailoj, Chalermpol

2017-02-01

To investigate the influence of cement film thickness, cement type, and substrate (enamel or dentin) on ceramic fracture resistance. One hundred extracted human third molars were polished to obtain 50 enamel and 50 dentin specimens. The specimens were cemented to 1-mm-thick lithium disilicate ceramic plates with different cement film thicknesses (100 and 300 μm) using metal strips as spacers. The cements used were etch-and-rinse (RelyX Ultimate) and self-adhesive (RelyX U200) resin cements. Compressive load was applied on the ceramic plates using a universal testing machine, and fracture loads were recorded in Newtons (N). Statistical analysis was performed by multiple regression (p < 0.05). Representative specimens were evaluated by scanning electron microscopy to control the cement film thickness. The RelyX Ultimate group with a cement thickness of 100 μm cemented to enamel showed the highest mean fracture load (MFL; 1591 ± 172.59 N). The RelyX Ultimate groups MFLs were significantly higher than the corresponding RelyX U200 groups (p < 0.05), and thinner film cement demonstrated a higher MFL than thicker films (p < 0.05). Bonding to dentin resulted in lower MFL than with enamel (p < 0.001). Higher fracture loads were related to thinner cement film thickness and RelyX Ultimate resin cement. Bonding to dentin resulted in lower fracture loads than bonding to enamel. Reduced resin film thickness could reduce lithium disilicate restoration fracture. Etch-and-rinse resin cements are recommended for cementing on either enamel or dentin, compared with self-adhesive resin cement, for improved fracture resistance. © 2015 by the American College of Prosthodontists.

Effect of Temperature on Film Thickness of Two Types of Commonly used Luting Cements.

PubMed

Kumar, M Praveen; Priyadarshini, Reddy; Kumar, Yasangi M; Priya, K Shanthi; Chunchuvyshnavi, Chunchuvyshnavi; Yerrapragada, Harika

2017-12-01

The aim of this study is to evaluate the effect of temperature change on film thickness of both types of cements. Totally, 60 samples were prepared with 10 in each subgroup, thus comprising 30 in each group. Materials tested were glass ionomer cement (GIC) type I and zinc phosphate type I. Samples were manipulated with manufacturer's instructions and tested according to American Dental Association (ADA) guidelines. The mean values of film thickness were recorded for both groups I and II. In intragroup comparison of group 1, subgroup III (26.560 ± 0.489 urn) was found to have the highest film thickness followed by subgroup II (24.182 ± 0.576 urn) and the lowest in subgroup I (20.209 ± 0.493 urn). In intragroup comparison of group II, the film thickness recorded in subgroup III (25.215 ± 0.661 urn) was the highest followed by subgroup II (21.471 ± 0.771 urn) and the least in subgroup I (17.951 ± 0.654 urn; p < 0.01). In intergroup comparison of groups I and II, group II (21.545 ± 0.841) was found to have less film thickness than group I (23.650 ± 0.271). The results were found to be statistically significant (p < 0.01). Both zinc phosphate and GICs can be used satisfactorily for luting purpose. The temperature fluctuations have a direct influence on the film thickness. Zinc phosphate has less film thickness than GIC. Zinc phosphate should be preferred over GIC in clinical practice, and more stress should be given in mechanical preparation of crowns for better retentive quality of prosthesis.

Paper-based microfluidics with an erodible polymeric bridge giving controlled release and timed flow shutoff.

PubMed

Jahanshahi-Anbuhi, Sana; Henry, Aleah; Leung, Vincent; Sicard, Clémence; Pennings, Kevin; Pelton, Robert; Brennan, John D; Filipe, Carlos D M

2014-01-07

Water soluble pullulan films were formatted into paper-based microfluidic devices, serving as a controlled time shutoff valve. The utility of the valve was demonstrated by a one-step, fully automatic implementation of a complex pesticide assay requiring timed, sequential exposure of an immobilized enzyme layer to separate liquid streams. Pullulan film dissolution and the capillary wicking of aqueous solutions through the device were measured and modeled providing valve design criteria. The films dissolve mainly by surface erosion, meaning the film thickness mainly controls the shutoff time. This method can also provide time-dependent sequential release of reagents without compromising the simplicity and low cost of paper-based devices.

A method for reducing the sloughing of thick blood films for malaria diagnosis.

PubMed

Norgan, Andrew P; Arguello, Heather E; Sloan, Lynne M; Fernholz, Emily C; Pritt, Bobbi S

2013-07-08

The gold standard for malaria diagnosis is the examination of thick and thin blood films. Thick films contain 10 to 20 times more blood than thin films, correspondingly providing increased sensitivity for malaria screening. A potential complication of thick film preparations is sloughing of the blood droplet from the slide during staining or rinsing, resulting in the loss of sample. In this work, two methods for improving thick film slide adherence ('scratch' (SCM) and 'acetone dip' (ADM) methods) were compared to the 'standard method' (SM) of thick film preparation. Standardized blood droplets from 26 previously examined EDTA whole blood specimens (22 positive and four negative) were concurrently spread on glass slides using the SM, ADM, and SCM. For the SM and ADM prepared slides, the droplet was gently spread to an approximate 22 millimeters in diameter spot on the slide using the edge of a second glass slide. For the SCM, the droplet was spread by carefully grinding (or scratching) it into the slide with the point of a second glass slide. Slides were dried for one hour in a laminar flow hood. For the ADM, slides were dipped once in an acetone filled Coplin jar and allowed to air dry. All slides were then Giemsa-stained and examined in a blinded manner. Adherence was assessed by blinded reviewers. No significant or severe defects were observed for slides prepared with the SCM. In contrast, 8 slides prepared by the ADM and 3 prepared using the SM displayed significant or severe defects. Thick films prepared by the three methods were microscopically indistinguishable and concordant results (positive or negative) were obtained for the three methods. Estimated parasitaemia of the blood samples ranged from 25 to 429,169 parasites/μL of blood. The SCM is an inexpensive, rapid, and simple method that improves the adherence of thick blood films to standard glass slides without altering general slide preparation, microscopic appearance or interpretability. Using the SCM, thick films can be reliably examined less than two hours after sample receipt. This represents a significant diagnostic improvement over protocols requiring extended drying periods.

Mechanical properties of thin-film materials evaluated from amplitude-dependent internal friction

NASA Astrophysics Data System (ADS)

Nishino, Yoichi

1999-09-01

A method is presented to evaluate the mechanical properties of thin-film materials from measurements of the amplitude-dependent internal friction. According to the constitutive equation, the internal friction in the film can be determined separately from measured damping of the film/substrate composite. The internal friction in aluminum films is dependent on the strain amplitude that is approximately two orders of magnitude higher than that for bulk aluminum. On the basis of the microplasticity theory, the amplitude-dependent internal friction in the film can be converted into the plastic strain as a function of effective stress on dislocation motion. The mechanical responses thus obtained for aluminum films show that the plastic strain of the order of 10-9 increases nonlinearly with increasing stress. These curves tend to shift to a higher stress with decreasing film thickness and also with decreasing temperature, both indicating a suppression of microplastic flow. The microflow stress at a constant level of the plastic strain varies inversely with the film thickness, provided the grain size is larger than the film thickness. The film thickness effect in the microplastic range can be well explained by the bowing of a dislocation segment whose ends are pinned at the film surface and at the film/substrate interface.

An efficient numerical procedure for thermohydrodynamic analysis of cavitating bearings

NASA Technical Reports Server (NTRS)

Vijayaraghavan, D.

1995-01-01

An efficient and accurate numerical procedure to determine the thermo-hydrodynamic performance of cavitating bearings is described. This procedure is based on the earlier development of Elrod for lubricating films, in which the properties across the film thickness are determined at Lobatto points and their distributions are expressed by collocated polynomials. The cavitated regions and their boundaries are rigorously treated. Thermal boundary conditions at the surfaces, including heat dissipation through the metal to the ambient, are incorporated. Numerical examples are presented comparing the predictions using this procedure with earlier theoretical predictions and experimental data. With a few points across the film thickness and across the journal and the bearing in the radial direction, the temperature profile is very well predicted.

Surface temperatures and glassy state investigations in tribology, part 5

NASA Technical Reports Server (NTRS)

Bair, S.; Winer, W. O.

1982-01-01

Preliminary measurements of high shear rate viscosity at near atmospheric but variable pressure suggest the importance of low normal stress and cavitation or fluid fracture in the type of stress field existing in elastohydrodynam ic inlets and classical hydrodynamic configurations. An experimental basis is given for three regimes of traction in concentrated contacts: a thin film regime characterized by high traction and determined by lambda ratio, a thick film regime characterized by low traction and determined by the speed parameter, and the elastohydrodynamic regime for which traction is controlled by limiting shear stress. Traction measurements were performed with various liquids, two solid lubricants, and a grease. Film thickness and traction measurements of polymer blends and base oils are compared.

Interfacial thin films rupture and self-similarity

NASA Astrophysics Data System (ADS)

Ward, Margaret H.

2011-06-01

Two superposed thin layers of fluids are prone to interfacial instabilities due to London-van der Waals forces. Evolution equations for the film thicknesses are derived using lubrication theory. Using the intrinsic scales, for a single layer, results in a system with parametric dependence of four ratios of the two layers: surface tension, Hamaker constant, viscosity, and film thickness. In contrast to the single layer case, the bilayer system has two unstable eigenmodes: squeezing and bending. For some particular parameter regimes, the system exhibits the avoided crossing behavior, where the two eigenmodes are interchanged. Based on numerical analysis, the system evolves into four different rupture states: basal layer rupture, upper layer rupture, double layer rupture, and mixed layer rupture. The ratio of Hamaker constants and the relative film thickness of the two layers control the system dynamics. Remarkably, the line of avoided crossing demarks the transition region of mode mixing and energy transfer, affecting the scaling of the dynamical regime map consequentially. Asymptotic and numerical analyses are used to examine the self-similar ruptures and to extract the power law scalings for both the basal layer rupture and the upper layer rupture. The scaling laws for the basal layer rupture are the same as those of the single layer on top of a substrate. The scaling laws for the upper layer rupture are different: the lateral length scale decreases according to (tr-t)1/3 and the film thickness decreases according to (tr-t)1/6.

Elastohydrodynamic lubrication of point contacts. Ph.D. Thesis - Leeds Univ.

NASA Technical Reports Server (NTRS)

Hamrock, B. J.

1976-01-01

A procedure for the numerical solution of the complete, isothermal, elastohydrodynamic lubrication problem for point contacts is given. This procedure calls for the simultaneous solution of the elasticity and Reynolds equations. By using this theory the influence of the ellipticity parameter and the dimensionless speed, load, and material parameters on the minimum and central film thicknesses was investigated. Thirty-four different cases were used in obtaining the fully flooded minimum- and central-film-thickness formulas. Lubricant starvation was also studied. From the results it was possible to express the minimum film thickness for a starved condition in terms of the minimum film thickness for a fully flooded condition, the speed parameter, and the inlet distance. Fifteen additional cases plus three fully flooded cases were used in obtaining this formula. Contour plots of pressure and film thickness in and around the contact have been presented for both fully flooded and starved lubrication conditions.

Effects of artificially produced defects on film thickness distribution in sliding EHD point contacts

NASA Technical Reports Server (NTRS)

Cusano, C.; Wedeven, L. D.

1981-01-01

The effects of artificially produced dents and grooves on the elastohydrodynamic (EHD) film thickness profile in a sliding point contact were investigated by means of optical interferometry. The defects, formed on the surface of a highly polished ball, were held stationary at various locations within and in the vicinity of the contact region while the disk was rotating. It is shown that the defects, having a geometry similar to what can be expected in practice, can dramatically change the film thickness which exists when no defects are present in or near the contact. This change in film thickness is mainly a function of the position of the defects in the inlet region, the geometry of the defects, the orientation of the defects in the case of grooves, and the depth of the defect relative to the central film thickness.

Spectral ellipsometry as a method for characterization of nanosized films with ferromagnetic layers

NASA Astrophysics Data System (ADS)

Hashim, H.; Singkh, S. P.; Panina, L. V.; Pudonin, F. A.; Sherstnev, I. A.; Podgornaya, S. V.; Shpetnyi, I. A.; Beklemisheva, A. V.

2017-11-01

Nanosized films with ferromagnetic layers are widely used in nanoelectronics, sensor systems and telecommunications. Their properties may strongly differ from those of bulk materials that is on account of interfaces, intermediate layers and diffusion. In the present work, spectral ellipsometry and magnetooptical methods are adapted for characterization of the optical parameters and magnetization processes in two- and three-layer Cr/NiFe, Al/NiFe and Cr(Al)/Ge/NiFe films onto a sitall substrate for various thicknesses of Cr and Al layers. At a layer thickness below 20 nm, the complex refractive coefficients depend pronouncedly on the thickness. In two-layer films, remagnetization changes weakly over a thickness of the top layer, but the coercive force in three-layer films increases by more than twice upon remagnetization, while increasing the top layer thickness from 4 to 20 nm.

The Accuracy of Al and Cu Film Thickness Determinations and the Implications for Electron Probe Microanalysis.

PubMed

Matthews, Mike B; Kearns, Stuart L; Buse, Ben

2018-04-01

The accuracy to which Cu and Al coatings can be determined, and the effect this has on the quantification of the substrate, is investigated. Cu and Al coatings of nominally 5, 10, 15, and 20 nm were sputter coated onto polished Bi using two configurations of coater: One with the film thickness monitor (FTM) sensor colocated with the samples, and one where the sensor is located to one side. The FTM thicknesses are compared against those calculated from measured Cu Lα and Al Kα k-ratios using PENEPMA, GMRFilm, and DTSA-II. Selected samples were also cross-sectioned using focused ion beam. Both systems produced repeatable coatings, the thickest coating being approximately four times the thinnest coating. The side-located FTM sensor indicated thicknesses less than half those of the software modeled results, propagating on to 70% errors in substrate quantification at 5 kV. The colocated FTM sensor produced errors in film thickness and substrate quantification of 10-20%. Over the range of film thicknesses and accelerating voltages modeled both the substrate and coating k-ratios can be approximated by linear trends as functions of film thickness. The Al films were found to have a reduced density of ~2 g/cm2.

Study of thickness dependent sputtering in gold thin films by swift heavy ion irradiation

NASA Astrophysics Data System (ADS)

Dash, P.; Sahoo, P. K.; Solanki, V.; Singh, U. B.; Avasthi, D. K.; Mishra, N. C.

2015-12-01

Gold thin films of varying thickness (10-100 nm) grown on silica substrates by e-beam evaporation method were irradiated by 120 MeV Au ions at 3 × 1012 and 1 × 1013 ions cm-2 fluences. Irradiation induced modifications of these films were probed by glancing angle X-ray diffraction (GAXRD), atomic force microscopy (AFM), Rutherford backscattering spectrometry (RBS) and surface enhanced Raman scattering (SERS). Irradiation didn't affect the structure, the lattice parameter or the crystallite size, but modified the texturing of grains from [1 1 1] to [2 2 0]. RBS indicated thickness dependent sputtering on irradiation. The sputtering yield was found to decrease with increasing thickness. AFM indicated increase of roughness with increasing irradiation fluence for films of all thickness. In agreement with the AFM observation, the gold nanostructures on the surface of 20 nm thick film were found to increase the SERS signal of acridine orange dye attached to these structures. The SERS peaks were amplified by many fold with increasing ion fluence. The effect of 120 MeV Au ion irradiation on the grain texture, surface morphology and SERS activity in addition to the thickness dependent sputtering in gold thin films are explained by the thermal spike model of ion-matter interaction.

Percolation effect in thick film superconductors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sali, R.; Harsanyi, G.

1994-12-31

A thick film superconductor paste has been developed to study the properties of granulated superconductor materials, to observe the percolation effect and to confirm the theory of the conducting mechanism in the superconducting thick films. This paste was also applied to make a superconducting planar transformer. Due to high T{sub c} and advantageous current density properties the base of the paste was chosen to be of Bi(Pb)SrCaCuO system. For contacts a conventional Ag/Pt paste was used. The critical temperature of the samples were between 110 K and 115 K depending on the printed layer thickness. The critical current density atmore » the boiling temperature of the liquid He- was between 200-300 A/cm{sup 2}. The R(T) and V(I) functions were measured with different parameters. The results of the measurements have confirmed the theory of conducting mechanism in the material. The percolation structure model has been built and described. As an application, a superconducting planar thick film transformer was planned and produced. Ten windings of the transformer were printed on one side of the alumina substrate and one winding was printed on the other side. The coupling between the two sides was possible through the substrate. The samples did not need special drying and firing parameters. After the preparation, the properties of the transformer were measured. The efficiency and the losses were determined. Finally, some fundamental advantages and problems of the process were discussed.« less

A general strategy for hybrid thin film fabrication and transfer onto arbitrary substrates.

PubMed

Zhang, Yong; Magan, John J; Blau, Werner J

2014-04-28

The development of thin film-based structures/devices often requires thin films to be transferred onto arbitrary substrates/surfaces. Controllable and non-destructive transfer method, although highly desired, remains quite challenging. Here we report a general method for fabrication and transfer of hybrid (ultra)thin films. The proposed solution-based in-situ transfer method shows not only its robust ability for thin film transfer onto arbitrary substrates but also its highly controlled and non-destructive characteristic. With a hole structure as the support, fully-stretched free-standing thin film is prepared. The successful transfer to a curved surface demonstrates the possibility for production of thin film-coated complex optical components. Ultrathin (35 nm) hybrid film transferred onto PET (50 μm thick) shows high transparency (>90% in visible range), conductivity (1.54 × 10(4) S/m), and flexibility (radius of curvature down to mm scale). The reported transfer method would provide a powerful route towards complex thin film-based structures/devices.

A General Strategy for Hybrid Thin Film Fabrication and Transfer onto Arbitrary Substrates

PubMed Central

Zhang, Yong; Magan, John J.; Blau, Werner J.

2014-01-01

The development of thin film-based structures/devices often requires thin films to be transferred onto arbitrary substrates/surfaces. Controllable and non-destructive transfer method, although highly desired, remains quite challenging. Here we report a general method for fabrication and transfer of hybrid (ultra)thin films. The proposed solution-based in-situ transfer method shows not only its robust ability for thin film transfer onto arbitrary substrates but also its highly controlled and non-destructive characteristic. With a hole structure as the support, fully-stretched free-standing thin film is prepared. The successful transfer to a curved surface demonstrates the possibility for production of thin film-coated complex optical components. Ultrathin (35 nm) hybrid film transferred onto PET (50 μm thick) shows high transparency (>90% in visible range), conductivity (1.54 × 104 S/m), and flexibility (radius of curvature down to mm scale). The reported transfer method would provide a powerful route towards complex thin film-based structures/devices. PMID:24769689

Improving subthreshold swing to thermionic emission limit in carbon nanotube network film-based field-effect

NASA Astrophysics Data System (ADS)

Zhao, Chenyi; Zhong, Donglai; Qiu, Chenguang; Han, Jie; Zhang, Zhiyong; Peng, Lian-Mao

2018-01-01

In this letter, we explore the vertical scaling-down behavior of carbon nanotube (CNT) network film field-effect transistors (FETs) and show that by using a high-efficiency gate insulator, we can substantially improve the subthreshold swing (SS) and its uniformity. By using an HfO2 layer with a thickness of 7.3 nm as the gate insulator, we fabricated CNT network film FETs with a long channel (>2 μm) that exhibit an SS of approximately 60 mV/dec. The preferred thickness of HfO2 as the gate insulator in a CNT network FET is between 7 nm and 10 nm, simultaneously yielding an excellent SS (<80 mV/decade) and low gate leakage. However, because of the statistical fluctuations of the network CNT channel, the lateral scaling of CNT network film-based FETs is more difficult than that of conventional FETs. Experiments suggest that excellent SS is difficult to achieve statistically in CNT network film FETs with a small channel length (smaller than the mean length of the CNTs), which eventually limits the further scaling down of this kind of CNT FET to the sub-micrometer regime.

Films based on neutralized chitosan citrate as innovative composition for cosmetic application.

PubMed

Libio, Illen C; Demori, Renan; Ferrão, Marco F; Lionzo, Maria I Z; da Silveira, Nádya P

2016-10-01

In this work, citrate and acetate buffers, were investigated as neutralizers to chitosan salts in order to provide biocompatible and stable films. To choose the appropriate film composition for this study, neutralized chitosan citrate and acetate films, with and without the plasticizer glycerol, were prepared and characterized by thickness, moisture content, degree of swelling, total soluble matter in acid medium, simultaneous thermal analysis and differential scanning calorimetry. Chitosan films neutralized in citrate buffer showed greater physical integrity resulted from greater thicknesses, lower moisture absorbance, lower tendency to solubility in the acid medium, and better swelling capacities. According to thermal analyses, these films had higher interaction with water which is considered an important feature for cosmetic application. Since the composition prepared in citrate buffer without glycerol was considered to present better physical integrity, it was applied to investigate hyaluronic acid release in a skin model. Skins treated with those films, with or without hyaluronic acid, show stratum corneum desquamation and hydration within 10min. The results suggest that the neutralized chitosan citrate film prepared without glycerol promotes a cosmetic effect for skin exfoliation in the presence or absence of hyaluronic acid. Copyright © 2016 Elsevier B.V. All rights reserved.

Fabrication and characterization of thick-film piezoelectric lead zirconate titanate ceramic resonators by tape-casting.

PubMed

Qin, Lifeng; Sun, Yingying; Wang, Qing-Ming; Zhong, Youliang; Ou, Ming; Jiang, Zhishui; Tian, Wei

2012-12-01

In this paper, thick-film piezoelectric lead zirconate titanate (PZT) ceramic resonators with thicknesses down to tens of micrometers have been fabricated by tape-casting processing. PZT ceramic resonators with composition near the morphotropic phase boundary and with different dopants added were prepared for piezoelectric transducer applications. Material property characterization for these thick-film PZT resonators is essential for device design and applications. For the property characterization, a recently developed normalized electrical impedance spectrum method was used to determine the electromechanical coefficient and the complex piezoelectric, elastic, and dielectric coefficients from the electrical measurement of resonators using thick films. In this work, nine PZT thick-film resonators have been fabricated and characterized, and two different types of resonators, namely thickness longitudinal and transverse modes, were used for material property characterization. The results were compared with those determined by the IEEE standard method, and they agreed well. It was found that depending on the PZT formulation and dopants, the relative permittivities ε(T)(33)/ε(0) measured at 2 kHz for these thick-films are in the range of 1527 to 4829, piezoelectric stress constants (e(33) in the range of 15 to 26 C/m(2), piezoelectric strain constants (d(31)) in the range of -169 × 10(-12) C/N to -314 × 10(-12) C/N, electromechanical coupling coefficients (k(t)) in the range of 0.48 to 0.53, and k(31) in the range of 0.35 to 0.38. The characterization results shows tape-casting processing can be used to fabricate high-quality PZT thick-film resonators, and the extracted material constants can be used to for device design and application.

Ultimate scaling of TiN/ZrO2/TiN capacitors: Leakage currents and limitations due to electrode roughness

NASA Astrophysics Data System (ADS)

Jegert, Gunther; Kersch, Alfred; Weinreich, Wenke; Lugli, Paolo

2011-01-01

In this paper, we investigate the influence of electrode roughness on the leakage current in TiN/high-κ ZrO2/TiN (TZT) thin-film capacitors which are used in dynamic random access memory cells. Based on a microscopic transport model, which is expanded to incorporate electrode roughness, we assess the ultimate scaling potential of TZT capacitors in terms of equivalent oxide thickness, film smoothness, thickness fluctuations, defect density and distribution, and conduction band offset (CBO). The model is based on three-dimensional, fully self-consistent, kinetic Monte Carlo transport simulations. Tunneling transport in the bandgap of the dielectric is treated, which includes defect-assisted transport mechanisms. Electrode roughness is described in the framework of fractal geometry. While the short-range roughness of the electrodes is found not to influence significantly the leakage current, thickness fluctuations of the dielectric have a major impact. For thinner dielectric films they cause a transformation of the dominant transport mechanism from Poole-Frenkel conduction to trap-assisted tunneling. Consequently, the sensitivity of the leakage current on electrode roughness drastically increases on downscaling. Based on the simulations, optimization of the CBO is suggested as the most viable strategy to extend the scalability of TZT capacitors over the next chip generations.

Additive-free thick graphene film as an anode material for flexible lithium-ion batteries.

PubMed

Rana, Kuldeep; Kim, Seong Dae; Ahn, Jong-Hyun

2015-04-28

This work demonstrates a simple route to develop mechanically flexible electrodes for Li-ion batteries (LIBs) that are usable as lightweight effective conducting networks for both cathodes and anodes. Removing electrochemically dead elements, such as binders, conducting agents and metallic current collectors, from the battery components will allow remarkable progress in this area. To investigate the feasibility of using thick, additive-free graphene films as anodes for flexible LIBs, we have synthesized and tested thick, additive-free, freestanding graphene films as anodes, first in a coin cell and further in a flexible full cell. As an anode material in a half cell, it showed a discharge capacity of about 350 mA h g(-1) and maintained nearly this capacity over 50 cycles at various current rates. This film was also tested as an anode material in a full cell with a LiCoO2 cathode and showed good electrochemical performance. Because the graphene-based flexible film showed good performance in half- and full coin cells, we used this film as a flexible anode for flexible LIBs. No conducting agent or binder was used in the anode side, which helped in realizing the flexible LIBs. Using this, we demonstrate a thin, lightweight and flexible lithium ion battery with good electrochemical performance in both its flat and bent states.

Nanoassembled thin film gas sensors. III. Sensitive detection of amine odors using TiO2/poly(acrylic acid) ultrathin film quartz crystal microbalance sensors.

PubMed

Lee, Seung-Woo; Takahara, Naoki; Korposh, Sergiy; Yang, Do-Hyeon; Toko, Kiyoshi; Kunitake, Toyoki

2010-03-15

Quartz crystal microbalance (QCM) gas sensors based on the alternate adsorption of TiO(2) and polyacrilic acid (PAA) were developed for the sensitive detection of amine odors. Individual TiO(2) gel layers could be regularly assembled with a thickness of approximately 0.3 nm by the gas-phase surface sol-gel process (GSSG). The thickness of the poly(acrylic acid) (PAA) layer is dependent on its molecular weight, showing different thicknesses of approximately 0.4 nm for PAA(25) (Mw 250,000) and 0.6-0.8 nm for PAA(400) (Mw 4,000,000). The QCM sensors showed a linear response to ammonia in the concentration range 0.3-15 ppm, depending on the deposition cycle of the alternate TiO(2)/PAA layer. The ammonia binding is based on the acid-base interaction to the free carboxylic acid groups of PAA and the limit of detection (LOD) of the 20-cycle TiO(2)/PAA(400) film was estimated to be 0.1 ppm when exposed to ammonia. The sensor response was very fast and stable in a wide relative humidity (rH) range of 30-70%, showing almost the same frequency changes at a given concentration of ammonia. Sensitivity to n-butylamine and ammonia was higher than to pyridine, which is owing to the difference of molecular weight and basicity of the amine analytes. The alternate TiO(2)/PAA(400) films have a highly effective ability to capture amine odors, and the ambient ammonia concentration of 15 ppm could be condensed up to approximately 20,000 ppm inside the films.

Confocal micro-Raman spectroscopy of black soap films

NASA Astrophysics Data System (ADS)

Lecourt, B.; Capelle, F.; Adamietz, F.; Malaplate, A.; Blaudez, D.; Kellay, H.; Turlet, J. M.

1998-01-01

Black soap films from aqueous solutions of sodium dodecyl sulphate are studied by micro-Raman confocal spectroscopy. At the end of the draining process films of different thicknesses are obtained depending on the experimental conditions: Working in a closed humidified chamber leads to common black films while, under evaporation or in the presence of electrolyte, Newton black films are observed. From the Raman spectra of these films, quantitative information is deduced about the conformational and lateral order of the aliphatic surfactant chains, as well as the thickness of the residual water layer. More accurate measurements of the thickness of these ultimate films have been carried out by transmission ellipsometry and their effective refractive index measured by Brewster angle reflectivity. The thinner films present higher molecular organization and their aqueous core exhibits unusual spectral features.

Mechanical design of thin-film diamond crystal mounting apparatus with optimized thermal contact and crystal strain for coherence preservation x-ray optics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shu, Deming; Shvydko, Yury; Stoupin, Stanislav

A method and mechanical design for a thin-film diamond crystal mounting apparatus for coherence preservation x-ray optics with optimized thermal contact and minimized crystal strain are provided. The novel thin-film diamond crystal mounting apparatus mounts a thin-film diamond crystal supported by a thick chemical vapor deposition (CVD) diamond film spacer with a thickness slightly thicker than the thin-film diamond crystal, and two groups of thin film thermal conductors, such as thin CVD diamond film thermal conductor groups separated by the thick CVD diamond spacer. The two groups of thin CVD film thermal conductors provide thermal conducting interface media with themore » thin-film diamond crystal. A piezoelectric actuator is integrated into a flexural clamping mechanism generating clamping force from zero to an optimal level.« less

Strain-relaxation and critical thickness of epitaxial La 1.85Sr 0.15CuO 4 films

DOE PAGES

Meyer, Tricia L; Jiang, Lu; Park, Sungkyun; ...

2015-12-08

We report the thickness-dependent strain-relaxation behavior and the associated impacts upon the superconductivity in epitaxial La 1.85Sr 0.15CuO 4 films grown on different substrates, which provide a range of strain. We have found that the critical thickness for the onset of superconductivity in La 1.85Sr 0.15CuO 4 films is associated with the finite thickness effect and epitaxial strain. In particular, thin films with tensile strain greater than ~0.25% revealed no superconductivity. We attribute this phenomenon to the inherent formation of oxygen vacancies that can be minimized via strain relaxation.

Eddy current measurement of the thickness of top Cu film of the multilayer interconnects in the integrated circuit (IC) manufacturing process

NASA Astrophysics Data System (ADS)

Qu, Zilian; Meng, Yonggang; Zhao, Qian

2015-03-01

This paper proposes a new eddy current method, named equivalent unit method (EUM), for the thickness measurement of the top copper film of multilayer interconnects in the chemical mechanical polishing (CMP) process, which is an important step in the integrated circuit (IC) manufacturing. The influence of the underneath circuit layers on the eddy current is modeled and treated as an equivalent film thickness. By subtracting this equivalent film component, the accuracy of the thickness measurement of the top copper layer with an eddy current sensor is improved and the absolute error is 3 nm for sampler measurement.

Thickness effects on the texture development of fluorine-doped SnO2 thin films: The role of surface and strain energy

NASA Astrophysics Data System (ADS)

Consonni, V.; Rey, G.; Roussel, H.; Bellet, D.

2012-02-01

Polycrystalline fluorine-doped SnO2 thin films have been grown by ultrasonic spray pyrolysis with a thickness varying in the range of 40 to 600 nm. A texture transition from ⟨110⟩ to ⟨100⟩ and ⟨301⟩ crystallographic orientations has experimentally been shown by x-ray diffraction measurements as film thickness is increased, showing that a process of abnormal grain growth has occurred. The texture effects are considered within a thermodynamic approach, in which the minimization of total free energy constitutes the driving force for grain growth. For very small film thickness, it is found that the ⟨110⟩ preferred orientation is due to surface energy minimization, as the (110) planes have the lowest surface energy in the rutile structure. In contrast, as film thickness is increased, the ⟨100⟩ and ⟨301⟩ crystallographic orientations are progressively predominant, owing to elastic strain energy minimization in which the anisotropic character is considered in the elastic biaxial modulus. A texture map is eventually determined, revealing the expected texture as a function of elastic strain and film thickness.

Measurement of liquid film thickness by optical fluorescence and its application to an oscillating piston positive displacement flowmeter

NASA Astrophysics Data System (ADS)

Morton, Charlotte E.; Baker, Roger C.; Hutchings, Ian M.

2011-12-01

The movement of the circular piston in an oscillating piston positive displacement flowmeter is important in understanding the operation of the flowmeter, and the leakage of liquid past the piston plays a key role in the performance of the meter. The clearances between the piston and the chamber are small, typically less than 60 µm. In order to measure this film thickness a fluorescent dye was added to the water passing through the meter, which was illuminated with UV light. Visible light images were captured with a digital camera and analysed to give a measure of the film thickness with an uncertainty of less than 7%. It is known that this method lacks precision unless careful calibration is undertaken. Methods to achieve this are discussed in the paper. The grey level values for a range of film thicknesses were calibrated in situ with six dye concentrations to select the most appropriate one for the range of liquid film thickness. Data obtained for the oscillating piston flowmeter demonstrate the value of the fluorescence technique. The method is useful, inexpensive and straightforward and can be extended to other applications where measurement of liquid film thickness is required.

Energy-storage properties and electrocaloric effect of Pb(1-3x/2)LaxZr0.85Ti0.15O3 antiferroelectric thick films.

PubMed

Zhao, Ye; Hao, Xihong; Zhang, Qi

2014-07-23

Antiferroelectric (AFE) thick (1 μm) films of Pb(1-3x/2)LaxZr0.85Ti0.15O3 (PLZT) with x = 0.08, 0.10, 0.12, and 0.14 were deposited on LaNiO3/Si (100) substrates by a sol-gel method. The dielectric properties, energy-storage performance, electrocaloric effect, and leakage current behavior were investigated in detail. With increasing La content, dielectric constant and saturated polarizations of the thick films were gradually decreased. A maximum recoverable energy-storage density of 38 J/cm(3) and efficiency of 71% were achieved in the thick films with x = 0.12 at room temperature. A large reversible adiabatic temperature change of ΔT = 25.0 °C was presented in the thick films with x = 0.08 at 127 °C at 990 kV/cm. Moreover, all the samples had a lower leakage current density below 10(-6) A/cm(2) at room temperature. These results indicated that the PLZT AFE thick films could be a potential candidate for applications in high energy-storage density capacitors and cooling devices.

Piezoelectric micromachined ultrasonic transducers based on PZT thin films.

PubMed

Muralt, Paul; Ledermann, Nicolas; Baborowski, Jacek; Barzegar, Abdolghaffar; Gentil, Sandrine; Belgacem, Brahim; Petitgrand, Sylvain; Bosseboeuf, Alain; Setter, Nava

2005-12-01

This paper describes fabrication and characterization results of piezoelectric micromachined ultrasonic transducers (pMUTs) based on 2-microm-thick Pb(Zr0.53Ti0.47O3) (PZT) thin films. The applied structures are circular plates held at four bridges, thus partially unclamped. A simple analytical model for the fully clamped structure is used as a reference to optimize design parameters such as thickness relations and electrodes, and to provide approximate predictions for coupling coefficients related to previously determined thin film properties. The best coupling coefficient was achieved with a 270-microm plate and amounted to kappa2 = 5.3%. This value compares well with the calculated value based on measured small signal dielectric (epsilon = 1050) and piezoelectric (e3l,f = 15 Cm(-2)) properties of the PZT thin film at 100 kV/cm dc bias. The resonances show relatively large Q-factors, which can be partially explained by the small diameters as compared to the sound wavelength in air and in the test liquid (Fluorinert 77). A transmit-receive experiment with two quasi-identical pMUTs was performed showing significant signal transmission up to a distance of 20 cm in air and 2 cm in the test liquid.

Film thickness for different regimes of fluid-film lubrication

NASA Technical Reports Server (NTRS)

Hamrock, B. J.

1980-01-01

Film thickness equations are provided for four fluid-film lubrication regimes found in elliptical contacts. These regimes are isoviscous-rigid; viscous-rigid; elastohydrodynamic lubrication of low-elastic-modulus materials (soft EHL), or isoviscous-elastic; and elastohydrodynamic lubrication of high-elastic-modulus materials (hard EHL), or viscous-elastic. The influence or lack of influence of elastic and viscous effects is the factor that distinguishes these regimes. The results are presented as a map of the lubrication regimes, with film thickness contours on a log-log grid of the viscosity and elasticity for three values of the ellipticity parameter.

Near-zero IR transmission of VO2 thin films deposited on Si substrate

NASA Astrophysics Data System (ADS)

Zhang, Chunzi; Koughia, Cyril; Li, Yuanshi; Cui, Xiaoyu; Ye, Fan; Shiri, Sheida; Sanayei, Mohsen; Wen, Shi-Jie; Yang, Qiaoqin; Kasap, Safa

2018-05-01

Vanadium dioxide (VO2) thin films of different thickness have been deposited on Si substrates by using DC magnetron sputtering. The effects of substrate pre-treatment by means of seeding (spin coating and ultrasonic bathing) and biasing on the structure and optical properties were investigated. Seeding results in a smaller grain size in the oxide film, whereas biasing results in square-textured crystals. VO2 thin films of 150 nm thick show a near-zero IR transmission in switched state. Especially, the 150 nm thick VO2 thin film with seeding treatment shows an enhanced switching efficiency.

Confinement induced densification in supported unentangled polymer films

NASA Astrophysics Data System (ADS)

Pradipkanti, L.; Satapathy, Dillip K.

2017-05-01

We report the densification phenomena inunentangled and low-molecular weight polystyrene (PS) thin films supported on solid substrates having thickness from 25 nm to 230 nm. The mass density of the thin polymer films were extracted from X-ray reflectivity profiles and also from the refractive index by using Clausius and Mossotti equation. The mass densityof polymeris found to increasesignificantly with decrease in film thickness below ten times the radius of gyration of the polymer. The net increase in mass density of the polymer film upon reduction in thickness is discussed in terms of three-layer model and the presence of unentangled polymer chains. We conjecture that, the densification of ultra-thin polymer films can strongly alter the polymer conformations at film/substrate interface.

Computational method for determining n and k for a thin film from the measured reflectance, transmittance, and film thickness.

PubMed

Bennett, J M; Booty, M J

1966-01-01

A computational method of determining n and k for an evaporated film from the measured reflectance, transmittance, and film thickness has been programmed for an IBM 7094 computer. The method consists of modifications to the NOTS multilayer film program. The basic program computes normal incidence reflectance, transmittance, phase change on reflection, and other parameters from the optical constants and thicknesses of all materials. In the modification, n and k for the film are varied in a prescribed manner, and the computer picks from among these values one n and one k which yield reflectance and transmittance values almost equalling the measured values. Results are given for films of silicon and aluminum.

Electrochemical behavior of high performance on-chip porous carbon films for micro-supercapacitors applications in organic electrolytes

NASA Astrophysics Data System (ADS)

Brousse, K.; Huang, P.; Pinaud, S.; Respaud, M.; Daffos, B.; Chaudret, B.; Lethien, C.; Taberna, P. L.; Simon, P.

2016-10-01

Carbide derived carbons (CDCs) are promising materials for preparing integrated micro-supercapacitors, as on-chip CDC films are prepared via a process fully compatible with current silicon-based device technology. These films show good adherence on the substrate and high capacitance thanks to their unique nanoporous structure which can be fine-tuned by adjusting the synthesis parameters during chlorination of the metallic carbide precursor. The carbon porosity is mostly related to the synthesis temperature whereas the thickness of the films depends on the chlorination duration. Increasing the pore size allows the adsorption of large solvated ions from organic electrolytes and leads to higher energy densities. Here, we investigated the electrochemical behavior and performance of on-chip TiC-CDC in ionic liquid solvent mixtures of 1-ethyl-3-methylimidazolium tetrafluoroborate (EMIBF4) diluted in either acetonitrile or propylene carbonate via cyclic voltammetry and electrochemical impedance spectroscopy. Thin CDC films exhibited typical capacitive signature and achieved 169 F cm-3 in both electrolytes; 65% of the capacitance was still delivered at 1 V s-1. While increasing the thickness of the films, EMI+ transport limitation was observed in more viscous PC-based electrolyte. Nevertheless, the energy density reached 90 μW h cm-2 in 2M EMIBF4/ACN, confirming the interest of these CDC films for micro-supercapacitors applications.

Alcohol vapor sensing by cadmium-doped zinc oxide thick films based chemical sensor

NASA Astrophysics Data System (ADS)

Zargar, R. A.; Arora, M.; Chackrabarti, S.; Ahmad, S.; Kumar, J.; Hafiz, A. K.

2016-04-01

Cadmium-doped zinc oxide nanoparticles were derived by simple chemical co-precipitation route using zinc acetate dihydrate and cadmium acetate dihydrate as precursor materials. The thick films were casted from chemical co-precipitation route prepared nanoparticles by economic facile screen printing method. The structural, morphological, optical and electrical properties of the film were characterized relevant to alcohol vapor sensing application by powder XRD, SEM, UV-VIS and DC conductivity techniques. The response and sensitivity of alcohol (ethanol) vapor sensor are obtained from the recovery curves at optimum working temperature range from 20∘C to 50∘C. The result shows that maximum sensitivity of the sensor is observed at 25∘C operating temperature. On varying alcohol vapor concentration, minor variation in resistance has been observed. The sensing mechanism of sensor has been described in terms of physical adsorption and chemical absorption of alcohol vapors on cadmium-doped zinc oxide film surface and inside film lattice network through weak hydrogen bonding, respectively.

Induced Superconductivity and Engineered Josephson Tunneling Devices in Epitaxial (111)-Oriented Gold/Vanadium Heterostructures.

PubMed

Wei, Peng; Katmis, Ferhat; Chang, Cui-Zu; Moodera, Jagadeesh S

2016-04-13

We report a unique experimental approach to create topological superconductors by inducing superconductivity into epitaxial metallic thin film with strong spin-orbit coupling. Utilizing molecular beam epitaxy technique under ultrahigh vacuum conditions, we are able to achieve (111) oriented single phase of gold (Au) thin film grown on a well-oriented vanadium (V) s-wave superconductor film with clean interface. We obtained atomically smooth Au thin films with thicknesses even down to below a nanometer showing near-ideal surface quality. The as-grown V/Au bilayer heterostructure exhibits superconducting transition at around 3.9 K. Clear Josephson tunneling and Andreev reflection are observed in S-I-S tunnel junctions fabricated from the epitaxial bilayers. The barrier thickness dependent tunneling and the associated subharmonic gap structures (SGS) confirmed the induced superconductivity in Au (111), paving the way for engineering thin film heterostructures based on p-wave superconductivity and nano devices exploiting Majorana Fermions for quantum computing.

Constant-current corona triode adapted and optimized for the characterization of thin dielectric films

NASA Astrophysics Data System (ADS)

Giacometti, José A.

2018-05-01

This work describes an enhanced corona triode with constant current adapted to characterize the electrical properties of thin dielectric films used in organic electronic devices. A metallic grid with a high ionic transparency is employed to charge thin films (100 s of nm thick) with a large enough charging current. The determination of the surface potential is based on the grid voltage measurement, but using a more sophisticated procedure than the previous corona triode. Controlling the charging current to zero, which is the open-circuit condition, the potential decay can be measured without using a vibrating grid. In addition, the electric capacitance and the characteristic curves of current versus the stationary surface potential can also be determined. To demonstrate the use of the constant current corona triode, we have characterized poly(methyl methacrylate) thin films with films with thicknesses in the range from 300 to 500 nm, frequently used as gate dielectric in organic field-effect transistors.

Solvent annealing induced phase separation and dewetting in PMMA∕SAN blend film: film thickness and solvent dependence.

PubMed

You, Jichun; Zhang, Shuangshuang; Huang, Gang; Shi, Tongfei; Li, Yongjin

2013-06-28

The competition between "dewetting" and "phase separation" behaviors in polymer blend films attracts significant attention in the last decade. The simultaneous phase separation and dewetting in PMMA∕SAN [poly(methyl methacrylate) and poly(styrene-ran-acrylonitrile)] blend ultrathin films upon solvent annealing have been observed for the first time in our previous work. In this work, film thickness and annealing solvent dependence of phase behaviors in this system has been investigated using atomic force microscopy and grazing incidence small-angle X-ray scattering (GISAXS). On one hand, both vertical phase separation and dewetting take place upon selective solvent vapor annealing, leading to the formation of droplet∕mimic-film structures with various sizes (depending on original film thickness). On the other hand, the whole blend film dewets the substrate and produces dispersed droplets on the silicon oxide upon common solvent annealing. GISAXS results demonstrate the phase separation in the big dewetted droplets resulted from the thicker film (39.8 nm). In contrast, no period structure is detected in small droplets from the thinner film (5.1 nm and 9.7 nm). This investigation indicates that dewetting and phase separation in PMMA∕SAN blend film upon solvent annealing depend crucially on the film thickness and the atmosphere during annealing.

Development of high Tc (greater than 100 K) Bi, Tl and Y-based materials as superconducting circuit elements

NASA Technical Reports Server (NTRS)

Haertling, Gene; Grabert, Gregory; Gilmour, Phillip

1994-01-01

Experimental work on this project over the last four years has resulted in establishing processing and characterization techniques for producing both the Bi-based and Tl-based superconductors in their high temperature (2223) forms. In the bulk, dry pressed form, maximum critical temperatures (Tc) of 108.2 K and 117.8 K, respectively, were measured. Results have further shown that the Bi and Tl-based superconducting materials in bulk form are noticeably different from the Y-based 123 material in that superconductivity is considerably harder to achieve, maintain, and reproduce. This is due primarily to the difficulty in obtaining the higher Tc phase in pure form since it commonly co-exists with other undesirable, lower Tc phases. In particular, it has been found that long processing times for calcining and firing (20 - 200 hrs.) and close control of temperatures which are very near the melting point are required in order to obtain higher proportions of the desirable, high Tc (2223) phase. Thus far, the BSCCO bulk materials has been prepared in uniaxially pressed, hot pressed, and tapecast form. The uniaxially pressed material has been synthesized by the mixed oxide, coprecipitation, and melt quenching processes. The tapecast and hot pressed materials have been prepared via the mixed oxide process. In addition, thick films of BSCCO (2223 phase) have been prepared by screen printing on to yttria and magnesia stabilized zirconia with only moderate success; i.e., superconductivity was achieved in these thick films, but the highest Tc obtained in these films was 89.0 K. The Tc's of the bulk hot pressed, tapecast, and screen printed thick film materials were found to be 108.2, 102.4, and 89.0 K, respectively.

Breakthrough to Non-Vacuum Deposition of Single-Crystal, Ultra-Thin, Homogeneous Nanoparticle Layers: A Better Alternative to Chemical Bath Deposition and Atomic Layer Deposition

PubMed Central

Liao, Yu-Kuang; Liu, Yung-Tsung; Hsieh, Dan-Hua; Shen, Tien-Lin; Hsieh, Ming-Yang; Tzou, An-Jye; Chen, Shih-Chen; Tsai, Yu-Lin; Lin, Wei-Sheng; Chan, Sheng-Wen; Shen, Yen-Ping; Cheng, Shun-Jen; Chen, Chyong-Hua; Wu, Kaung-Hsiung; Chen, Hao-Ming; Kuo, Shou-Yi; Charlton, Martin D. B.; Hsieh, Tung-Po; Kuo, Hao-Chung

2017-01-01

Most thin-film techniques require a multiple vacuum process, and cannot produce high-coverage continuous thin films with the thickness of a few nanometers on rough surfaces. We present a new ”paradigm shift” non-vacuum process to deposit high-quality, ultra-thin, single-crystal layers of coalesced sulfide nanoparticles (NPs) with controllable thickness down to a few nanometers, based on thermal decomposition. This provides high-coverage, homogeneous thickness, and large-area deposition over a rough surface, with little material loss or liquid chemical waste, and deposition rates of 10 nm/min. This technique can potentially replace conventional thin-film deposition methods, such as atomic layer deposition (ALD) and chemical bath deposition (CBD) as used by the Cu(In,Ga)Se2 (CIGS) thin-film solar cell industry for decades. We demonstrate 32% improvement of CIGS thin-film solar cell efficiency in comparison to reference devices prepared by conventional CBD deposition method by depositing the ZnS NPs buffer layer using the new process. The new ZnS NPs layer allows reduction of an intrinsic ZnO layer, which can lead to severe shunt leakage in case of a CBD buffer layer. This leads to a 65% relative efficiency increase. PMID:28383488