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Sample records for beam sputtering method

  1. Confined ion beam sputtering device and method

    DOEpatents

    Sharp, Donald J.

    1988-01-01

    A hollow cylindrical target, lined internally with a sputter deposit material and open at both ends, surrounds a substrate on which sputtered deposition is to be obtained. An ion beam received through either one or both ends of the open cylindrical target is forced by a negative bias applied to the target to diverge so that ions impinge at acute angles at different points of the cylindrical target surface. The ion impingement results in a radially inward and downstream directed flux of sputter deposit particles that are received by the substrate. A positive bias applied to the substrate enhances divergence of the approaching ion beams to generate a higher sputtered deposition flux rate. Alternatively, a negative bias applied to the substrate induces the core portion of the ion beams to reach the substrate and provide ion polishing of the sputtered deposit thereon.

  2. Confined ion beam sputtering device and method

    DOEpatents

    Sharp, D.J.

    1986-03-25

    A hollow cylindrical target, lined internally with a sputter deposit material and open at both ends, surrounds a substrate on which sputtered deposition is to be obtained. An ion beam received through either one or both ends of the open cylindrical target is forced by a negative bias applied to the target to diverge so that ions impinge at acute angles at different points of the cylindrical target surface. The ion impingement results in a radially inward and downstream directed flux of sputter deposit particles that are received by the substrate. A positive bias applied to the substrate enhances divergence of the approaching ion beams to generate a higher sputtered deposition flux rate. Alternatively, a negative bias applied to the substrate induces the core portion of the ion beams to reach the substrate and provide ion polishing of the sputtered deposit thereon.

  3. Ion beam sputter target and method of manufacture

    DOEpatents

    Higdon, Clifton; Elmoursi, Alaa A.; Goldsmith, Jason; Cook, Bruce; Blau, Peter; Jun, Qu; Milner, Robert

    2014-09-02

    A target for use in an ion beam sputtering apparatus made of at least two target tiles where at least two of the target tiles are made of different chemical compositions and are mounted on a main tile and geometrically arranged on the main tile to yield a desired chemical composition on a sputtered substrate. In an alternate embodiment, the tiles are of varied thickness according to the desired chemical properties of the sputtered film. In yet another alternate embodiment, the target is comprised of plugs pressed in a green state which are disposed in cavities formed in a main tile also formed in a green state and the assembly can then be compacted and then sintered.

  4. Ion beam sputter etching

    NASA Technical Reports Server (NTRS)

    Banks, Bruce A.; Rutledge, Sharon K.

    1986-01-01

    An ion beam etching process which forms extremely high aspect ratio surface microstructures using thin sputter masks is utilized in the fabrication of integrated circuits. A carbon rich sputter mask together with unmasked portions of a substrate is bombarded with inert gas ions while simultaneous carbon deposition occurs. The arrival of the carbon deposit is adjusted to enable the sputter mask to have a near zero or even slightly positive increase in thickness with time while the unmasked portions have a high net sputter etch rate.

  5. Ion beam sputtering of fluoropolymers

    NASA Technical Reports Server (NTRS)

    Sovey, J. S.

    1978-01-01

    Etching and deposition of fluoropolymers are of considerable industrial interest for applications dealing with adhesion, chemical inertness, hydrophobicity, and dielectric properties. This paper describes ion beam sputter processing rates as well as pertinent characteristics of etched targets and films. An argon ion beam source was used to sputter etch and deposit the fluoropolymers PTFE, FEP, and CTFE. Ion beam energy, current density, and target temperature were varied to examine effects on etch and deposition rates. The ion etched fluoropolymers yield cone or spire-like surface structures which vary depending upon the type of polymer, ion beam power density, etch time, and target temperature. Also presented are sputter target and film characteristics which were documented by spectral transmittance measurements, X-ray diffraction, ESCA, and SEM photomicrographs.

  6. Method of making an ion beam sputter-etched ventricular catheter for hydrocephalus shunt

    NASA Technical Reports Server (NTRS)

    Banks, B. A. (Inventor)

    1984-01-01

    The centricular catheter comprises a multiplicity of inlet microtubules. Each microtubule has both a large opening at its inlet end and a multiplicity of microscopic openings along its lateral surfaces. The microtubules are perforated by an ion beam sputter etch technique. The holes are etched in each microtubule by directing an ion beam through an electro formed mesh mask producing perforations having diameters ranging from about 14 microns to about 150 microns. This structure assures a reliable means for shunting cerebrospinal fluid from the cerebral ventricles to selected areas of the body.

  7. Properties of Electron-Beam Irradiated CuInSe2 Layers by Multi-Step Sputtering Method.

    PubMed

    Kim, Chae-Woong; Kim, Jin Hyeok; Jeong, Chaehwan

    2015-10-01

    Typically, CuInSe2 (CIS) based thin films for photovoltaic devices are deposited by co-evaporation or by deposition of the metals, followed by treatment in a selenium environment. This article describes CIS films that are instead deposited by DC and RF magnetron sputtering from binary Cu2Se and In2Se3 targets without the supply of selenium. As a novel method, electron beam annealing was used for crystallization of Cu2Se/In2Se3 stacked precursors. The surface, cross-sectional morphology, and compositional ratio of CIS films were investigated to confirm the possibility in crystallization without any addition of selenium. Our work demonstrates that the e-beam annealing method can be a good candidate for the rapid crystallization of Cu-In-Se sputtered precursors.

  8. Development of long-lived thick carbon stripper foils for high energy heavy ion accelerators by a heavy ion beam sputtering method

    SciTech Connect

    Muto, Hideshi; Ohshiro, Yukimitsu; Kawasaki, Katsunori; Oyaizu, Michihiro; Hattori, Toshiyuki

    2013-04-19

    In the past decade, we have developed extremely long-lived carbon stripper foils of 1-50 {mu}g/cm{sup 2} thickness prepared by a heavy ion beam sputtering method. These foils were mainly used for low energy heavy ion beams. Recently, high energy negative Hydrogen and heavy ion accelerators have started to use carbon stripper foils of over 100 {mu}g/cm{sup 2} in thickness. However, the heavy ion beam sputtering method was unsuccessful in production of foils thicker than about 50 {mu}g/cm{sup 2} because of the collapse of carbon particle build-up from substrates during the sputtering process. The reproduction probability of the foils was less than 25%, and most of them had surface defects. However, these defects were successfully eliminated by introducing higher beam energies of sputtering ions and a substrate heater during the sputtering process. In this report we describe a highly reproducible method for making thick carbon stripper foils by a heavy ion beam sputtering with a Krypton ion beam.

  9. Titanium dioxide fine structures by RF magnetron sputter method deposited on an electron-beam resist mask

    NASA Astrophysics Data System (ADS)

    Hashiba, Hideomi; Miyazaki, Yuta; Matsushita, Sachiko

    2013-09-01

    Titanium dioxide (TiO2) has been draw attention for wide range of applications from photonic crystals for visible light range by its catalytic characteristics to tera-hertz range by its high refractive index. We present an experimental study of fabrication of fine structures of TiO2 with a ZEP electron beam resist mask followed by Ti sputter deposition techniques. A TiO2 thin layer of 150 nm thick was grown on an FTO glass substrate with a fine patterned ZEP resist mask by a conventional RF magnetron sputter method with Ti target. The deposition was carried out with argon-oxygen gases at a pressure of 5.0 x 10 -1 Pa in a chamber. During the deposition, ratio of Ar-O2 gas was kept to the ratio of 2:1 and the deposition ratio was around 0.5 Å/s to ensure enough oxygen to form TiO2 and low temperature to avoid deformation of fine pattern of the ZPU resist mask. Deposited TiO2 layers are white-transparent, amorphous, and those roughnesses are around 7 nm. Fabricated TiO2 PCs have wider TiO2 slabs of 112 nm width leaving periodic 410 x 410 nm2 air gaps. We also studied transformation of TiO2 layers and TiO2 fine structures by baking at 500 °C. XRD measurement for TiO2 shows that the amorphous TiO2 transforms to rutile and anatase forms by the baking while keeping the same profile of the fine structures. Our fabrication method can be one of a promising technique to optic devices on researches and industrial area.

  10. Method and means of directing an ion beam onto an insulating surface for ion implantation or sputtering

    DOEpatents

    Gruen, Dieter M.; Krauss, Alan R.; Siskind, Barry

    1981-01-01

    A beam of ions is directed under control onto an insulating surface by supplying simultaneously a stream of electrons directed at the same surface in a quantity sufficient to neutralize the overall electric charge of the ion beam and result in a net zero current flow to the insulating surface. The ion beam is adapted particularly both to the implantation of ions in a uniform areal disposition over the insulating surface and to the sputtering of atoms or molecules of the insulator onto a substrate.

  11. Ion beam sputtering in electric propulsion facilities

    NASA Technical Reports Server (NTRS)

    Sovey, James S.; Patterson, Michael J.

    1991-01-01

    Experiments were undertaken to determine sputter yields of potential ion beam target materials, to assess the impact of charge exchange on beam diagnostics in large facilities, and to examine material erosion and deposition after a 957 hr test of a 5 kW-class ion thruster. The xenon ion sputter yield of flexible graphite was lower than other graphite forms especially at high angles of incidence. Ion beam charge exchange effects were found to hamper beam probe current collection diagnostics even at pressures from 0.7 to 1.7 mPa. Estimates of the xenon ion beam envelope were made and predictions of the thickness of sputter deposited coatings in the facility were compared with measurements.

  12. Ion beam sputtering in electric propulsion facilities

    NASA Technical Reports Server (NTRS)

    Sovey, James S.; Patterson, Michael J.

    1991-01-01

    Experiments were undertaken to determine sputter yields of potential ion beam target materials, to assess the impact of charge exchange on beam diagnostics in large facilities, and to examine material erosion and deposition after a 957-hour test of a 5 kW-class ion thruster. The xenon ion sputter yield of flexible graphite was lower than other graphite forms especialy at high angles of incidence. Ion beam charge exchange effects were found to hamper beam probe current collection diagnostics even at pressures from 0.7 to 1.7 mPa. Estimates of the xenon ion beam envelope were made and predictions of the thickness of sputter deposited coatings in the facility were compared with measurements.

  13. Ion beam sputter deposited diamond like films

    NASA Technical Reports Server (NTRS)

    Banks, B. A.; Rutledge, S. K.

    1982-01-01

    A single argon ion beam source was used to sputter deposit carbon films on fused silica, copper, and tantalum substrates under conditions of sputter deposition alone and sputter deposition combined with simultaneous argon ion bombardment. Simultaneously deposited and ion bombarded carbon films were prepared under conditions of carbon atom removal to arrival ratios of 0, 0.036, and 0.71. Deposition and etch rates were measured for films on fused silica substrates. Resulting characteristics of the deposited films are: electrical resistivity of densities of 2.1 gm/cu cm for sputter deposited films and 2.2 gm/cu cm for simultaneously sputter deposited and Ar ion bombarded films. For films approximately 1700 A thick deposited by either process and at 5550 A wavelength light the reflectance was 0.2, the absorptance was 0.7, the absorption coefficient was 67,000 cm to the -1 and the transmittance was 0.1.

  14. Ion-beam sputtering increases solar-cell efficiency

    NASA Technical Reports Server (NTRS)

    Burk, D. E.; Dubow, J. B.; Sites, R. R.

    1977-01-01

    Ion-beam sputtering, fabrication of oxide-semiconductor-on-silicon (OSOS) solar cells, results in cells of 12% efficiency. Ion-beam sputtering technique is compatible with low-cost continuous fabrication and requires no high-temperature processing.

  15. Ion beam sputter etching and deposition of fluoropolymers

    NASA Technical Reports Server (NTRS)

    Banks, B. A.; Sovey, J. S.; Miller, T. B.; Crandall, K. S.

    1978-01-01

    Fluoropolymer etching and deposition techniques including thermal evaporation, RF sputtering, plasma polymerization, and ion beam sputtering are reviewed. Etching and deposition mechanisms and material characteristics are discussed. Ion beam sputter etch rates for polytetrafluoroethylene (PTFE) were determined as a function of ion energy, current density and ion beam power density. Peel strengths were measured for epoxy bonds to various ion beam sputtered fluoropolymers. Coefficients of static and dynamic friction were measured for fluoropolymers deposited from ion bombarded PTFE.

  16. Ion beam sputter etching and deposition of fluoropolymers

    NASA Technical Reports Server (NTRS)

    Banks, B. A.; Sovey, J. S.; Miller, T. B.; Crandall, K. S.

    1978-01-01

    Fluoropolymer etching and deposition techniques including thermal evaporation, RF sputtering, plasma polymerization, and ion beam sputtering are reviewed. Etching and deposition mechanism and material characteristics are discussed. Ion beam sputter etch rates for polytetrafluoroethylene (PTFE) were determined as a function of ion energy, current density and ion beam power density. Peel strengths were measured for epoxy bonds to various ion beam sputtered fluoropolymers. Coefficients of static and dynamic friction were measured for fluoropolymers deposited from ion bombarded PTFE.

  17. Monte Carlo simulations of nanoscale focused neon ion beam sputtering.

    PubMed

    Timilsina, Rajendra; Rack, Philip D

    2013-12-13

    A Monte Carlo simulation is developed to model the physical sputtering of aluminum and tungsten emulating nanoscale focused helium and neon ion beam etching from the gas field ion microscope. Neon beams with different beam energies (0.5-30 keV) and a constant beam diameter (Gaussian with full-width-at-half-maximum of 1 nm) were simulated to elucidate the nanostructure evolution during the physical sputtering of nanoscale high aspect ratio features. The aspect ratio and sputter yield vary with the ion species and beam energy for a constant beam diameter and are related to the distribution of the nuclear energy loss. Neon ions have a larger sputter yield than the helium ions due to their larger mass and consequently larger nuclear energy loss relative to helium. Quantitative information such as the sputtering yields, the energy-dependent aspect ratios and resolution-limiting effects are discussed.

  18. Ion Beam Sputtered Coatings of Bioglass

    NASA Technical Reports Server (NTRS)

    Hench, Larry L.; Wilson, J.; Ruzakowski, Patricia Henrietta Anne

    1982-01-01

    The ion beam sputtering technique available at the NASA-Lewis was used to apply coatings of bioglass to ceramic, metallic, and polymeric substrates. Experiments in vivo and in vitro described investigate these coatings. Some degree of substrate masking was obtained in all samples although stability and reactivity equivalent to bulk bioglass was not observed in all coated samples. Some degree of stability was seen in all coated samples that were reacted in vitro. Both metallic and ceramic substrates coated in this manner failed to show significantly improved coatings over those obtained with existing techniques. Implantation of the coated ceramic substrate samples in bone gave no definite bonding as seen with bulk glass; however, partial and patchy bonding was seen. Polymeric substrates in these studies showed promise of success. The coatings applied were sufficient to mask the underlying reactive test surface and tissue adhesion of collagen to bioglass was seen. Hydrophilic, hydrophobic, charged, and uncharged polymeric surfaces were successfully coated.

  19. Ion beam sputter deposited zinc telluride films

    NASA Technical Reports Server (NTRS)

    Gulino, D. A.

    1985-01-01

    Zinc telluride is of interest as a potential electronic device material, particularly as one component in an amorphous superlattice, which is a new class of interesting and potentially useful materials. Some structural and electronic properties of ZnTe films deposited by argon ion beam sputter depoairion are described. Films (up to 3000 angstroms thick) were deposited from a ZnTe target. A beam energy of 1000 eV and a current density of 4 mA/sq. cm. resulted in deposition rates of approximately 70 angstroms/min. The optical band gap was found to be approximately 1.1 eV, indicating an amorphous structure, as compared to a literature value of 2.26 eV for crystalline material. Intrinsic stress measurements showed a thickness dependence, varying from tensile for thicknesses below 850 angstroms to compressive for larger thicknesses. Room temperature conductivity measurement also showed a thickness dependence, with values ranging from 1.86 x to to the -6/ohm. cm. for 300 angstrom film to 2.56 x 10 to the -1/ohm. cm. for a 2600 angstrom film. Measurement of the temperature dependence of the conductivity for these films showed complicated behavior which was thickness dependent. Thinner films showed at least two distinct temperature dependent conductivity mechanisms, as described by a Mott-type model. Thicker films showed only one principal conductivity mechanism, similar to what might be expected for a material with more crystalline character.

  20. Ion beam sputter deposited zinc telluride films

    NASA Technical Reports Server (NTRS)

    Gulino, D. A.

    1986-01-01

    Zinc telluride is of interest as a potential electronic device material, particularly as one component in an amorphous superlattice, which is a new class of interesting and potentially useful materials. Some structural and electronic properties of ZnTe films deposited by argon ion beam sputter deposition are described. Films (up to 3000 angstroms thick) were deposited from a ZnTe target. A beam energy of 1000 eV and a current density of 4 mA/sq cm resulted in deposition rates of approximately 70 angstroms/min. The optical band gap was found to be approximately 1.1 eV, indicating an amorphous structure, as compared to a literature value of 2.26 eV for crystalline material. Intrinsic stress measurements showed a thickness dependence, varying from tensile for thicknesses below 850 angstroms to compressive for larger thicknesses. Room temperature conductivity measurement also showed a thickness dependence, with values ranging from 1.86 x 10 to the -6th/ohm cm for 300 angstrom film to 2.56 x 10 to the -1/ohm cm for a 2600 angstrom film. Measurement of the temperature dependence of the conductivity for these films showed complicated behavior which was thickness dependent. Thinner films showed at least two distinct temperature dependent conductivity mechanisms, as described by a Mott-type model. Thicker films showed only one principal conductivity mechanism, similar to what might be expected for a material with more crystalline character.

  1. Electron-beam activated thermal sputtering of thermoelectric materials

    SciTech Connect

    Wu Jinsong; Dravid, Vinayak P.; He Jiaqing; Han, Mi-Kyung; Sootsman, Joseph R.; Girard, Steven; Arachchige, Indika U.; Kanatzidis, Mercouri G.

    2011-08-15

    Thermoelectricity and Seebeck effect have long been observed and validated in bulk materials. With the development of advanced tools of materials characterization, here we report the first observation of such an effect in the nanometer scale: in situ directional sputtering of several thermoelectric materials inside electron microscopes. The temperature gradient introduced by the electron beam creates a voltage-drop across the samples, which enhances spontaneous sputtering of specimen ions. The sputtering occurs along a preferential direction determined by the direction of the temperature gradient. A large number of nanoparticles form and accumulate away from the beam location as a result. The sputtering and re-crystallization are found to occur at temperatures far below the melting points of bulk materials. The sputtering occurs even when a liquid nitrogen cooling holder is used to keep the overall temperature at -170 deg. C. This unique phenomenon that occurred in the nanometer scale may provide useful clues to understanding the mechanism of thermoelectric effect.

  2. Electron-beam activated thermal sputtering of thermoelectric materials.

    SciTech Connect

    Wu, J.; He, J.; Han, M-K.; Sootsman, J. R.; Girard, S.; Arachchige, I. U.; Kanatzidis, M. G.; Dravid, V. P.

    2011-08-01

    Thermoelectricity and Seebeck effect have long been observed and validated in bulk materials. With the development of advanced tools of materials characterization, here we report the first observation of such an effect in the nanometer scale: in situ directional sputtering of several thermoelectric materials inside electron microscopes. The temperature gradient introduced by the electron beam creates a voltage-drop across the samples, which enhances spontaneous sputtering of specimen ions. The sputtering occurs along a preferential direction determined by the direction of the temperature gradient. A large number of nanoparticles form and accumulate away from the beam location as a result. The sputtering and re-crystallization are found to occur at temperatures far below the melting points of bulk materials. The sputtering occurs even when a liquid nitrogen cooling holder is used to keep the overall temperature at -170 C. This unique phenomenon that occurred in the nanometer scale may provide useful clues to understanding the mechanism of thermoelectric effect.

  3. Deposition of reactively ion beam sputtered silicon nitride coatings

    NASA Technical Reports Server (NTRS)

    Grill, A.

    1982-01-01

    An ion beam source was used to deposit silicon nitride films by reactively sputtering a silicon target with beams of Ar + N2 mixtures. The nitrogen fraction in the sputtering gas was 0.05 to 0.80 at a total pressure of 6 to 2 millionth torr. The ion beam current was 50 mA at 500 V. The composition of the deposited films was investigated by auger electron spectroscopy and the rate of deposition was determined by interferometry. A relatively low rate of deposition of about 2 nm. one-tenth min. was found. AES spectra of films obtained with nitrogen fractions higher than 0.50 were consistent with a silicon to nitrogen ratio corresponding to Si3N4. However the AES spectra also indicated that the sputtered silicon nitride films were contaminated with oxygen and carbon and contained significant amounts of iron, nickel, and chromium, most probably sputtered from the holder of the substrate and target.

  4. Electrostatic particle trap for ion beam sputter deposition

    DOEpatents

    Vernon, Stephen P.; Burkhart, Scott C.

    2002-01-01

    A method and apparatus for the interception and trapping of or reflection of charged particulate matter generated in ion beam sputter deposition. The apparatus involves an electrostatic particle trap which generates electrostatic fields in the vicinity of the substrate on which target material is being deposited. The electrostatic particle trap consists of an array of electrode surfaces, each maintained at an electrostatic potential, and with their surfaces parallel or perpendicular to the surface of the substrate. The method involves interception and trapping of or reflection of charged particles achieved by generating electrostatic fields in the vicinity of the substrate, and configuring the fields to force the charged particulate material away from the substrate. The electrostatic charged particle trap enables prevention of charged particles from being deposited on the substrate thereby enabling the deposition of extremely low defect density films, such as required for reflective masks of an extreme ultraviolet lithography (EUVL) system.

  5. Sputtering-erosion estimates for NBETF beam dumps

    SciTech Connect

    Wekhof, A.; Berkner, K.H.

    1981-10-01

    To stop multi-second high-energy hydrogen or deuterium beams in neutral injection systems, thin-skin actively cooled dumps made of Cu, Mo, or W are contemplated. For the Neutral Beam Engineering Test Facility (NBETF), the design goal for the life of the beam dumps is 25,000 thirty-second pulses, with a fluence of 10/sup 23/ deuterons/cm/sup 2/. From a review of the literature on sputtering and blistering, we estimate that an erosion allowance of 0.13 cm for Cu, 0.02 cm for Mo, and 0.004 cm for W has to be incorporated in the beam-dump design.

  6. Thickness-dependent crystallization on thermal anneal for titania/silica nm-layer composites deposited by ion beam sputter method.

    PubMed

    Pan, Huang-Wei; Wang, Shun-Jin; Kuo, Ling-Chi; Chao, Shiuh; Principe, Maria; Pinto, Innocenzo M; DeSalvo, Riccardo

    2014-12-01

    Crystallization following thermal annealing of thin film stacks consisting of alternating nm-thick titania/silica layers was investigated. Several prototypes were designed, featuring a different number of titania/silica layer pairs, and different thicknesses (in the range from 4 to 40 nm, for the titania layers), but the same nominal refractive index (2.09) and optical thickness (a quarter of wavelength at 1064 nm). The prototypes were deposited by ion beam sputtering on silicon substrates. All prototypes were found to be amorphous as-deposited. Thermal annealing in air at progressive temperatures was subsequently performed. It was found that the titania layers eventually crystallized forming the anatase phase, while the silica layers remained always amorphous. However, progressively thinner layers exhibited progressively higher threshold temperatures for crystallization onset. Accordingly it can be expected that composites with thinner layers will be able to sustain higher annealing temperatures without crystallizing, and likely yielding better optical and mechanical properties for advanced coatings application. These results open the way to the use of materials like titania and hafnia, that crystallize easily under thermal anneal, but ARE otherwise promising candidate materials for HR coatings necessary for cryogenic 3rd generation laser interferometric gravitational wave detectors. PMID:25606914

  7. Sputtering - A vacuum deposition method for coating material.

    NASA Technical Reports Server (NTRS)

    Spalvins, T.

    1972-01-01

    The sputtering method is discussed in terms of the unique features which sputter offers in depositing coatings. These features include versatility, momentum transfer, configuration of target, precise controls, and a relatively slow deposition rate. Sputtered films are evaluated in terms of adherence, coherence, and the internal stresses. The observed strong adherence is attributed to the high kinetic energies of the sputtered material, sputter etched surface, and the submicroscopic particle size. Film thickness can be controlled to a millionth of a centimeter. Very adherent films of sputtered PTFE (teflon) can be deposited in a single operation on any type of material and on any geometrical configuration.

  8. Pattern evolution during ion beam sputtering; reductionistic view

    NASA Astrophysics Data System (ADS)

    Kim, J.-H.; Kim, J.-S.

    2016-09-01

    The development of the ripple pattern during the ion beam sputtering (IBS) is expounded via the evolution of its constituent ripples. For that purpose, we perform numerical simulation of the ripple evolution that is based on Bradley-Harper model and its non-linear extension. The ripples are found to evolve via various well-defined processes such as ripening, averaging, bifurcation and their combinations, depending on their neighboring ripples. Those information on the growth kinetics of each ripple allow the detailed description of the pattern development in real space that the instability argument and the diffraction study both made in k-space cannot provide.

  9. Ion beam sputtering of fluoropolymers. [etching polymer films and target surfaces

    NASA Technical Reports Server (NTRS)

    Sovey, J. S.

    1978-01-01

    Ion beam sputter processing rates as well as pertinent characteristics of etched targets and films are described. An argon ion beam source was used to sputter etch and deposit the fluoropolymers PTFE, FEP, and CTFE. Ion beam energy, current density, and target temperature were varied to examine effects on etch and deposition rates. The ion etched fluoropolymers yield cone or spire-like surface structures which vary depending upon the type of polymer, ion beam power density, etch time, and target temperature. Sputter target and film characteristics documented by spectral transmittance measurements, X-ray diffraction, ESCA, and SEM photomicrographs are included.

  10. Method of sputter etching a surface

    DOEpatents

    Henager, Jr., Charles H.

    1984-01-01

    The surface of a target is textured by co-sputter etching the target surface with a seed material adjacent thereto, while the target surface is maintained at a pre-selected temperature. By pre-selecting the temperature of the surface while sputter etching, it is possible to predetermine the reflectance properties of the etched surface. The surface may be textured to absorb sunlight efficiently and have minimal emittance in the infrared region so as to be well-suited for use as a solar absorber for photothermal energy conversion.

  11. Method of sputter etching a surface

    DOEpatents

    Henager, C.H. Jr.

    1984-02-14

    The surface of a target is textured by co-sputter etching the target surface with a seed material adjacent thereto, while the target surface is maintained at a pre-selected temperature. By pre-selecting the temperature of the surface while sputter etching, it is possible to predetermine the reflectance properties of the etched surface. The surface may be textured to absorb sunlight efficiently and have minimal emittance in the infrared region so as to be well-suited for use as a solar absorber for photothermal energy conversion. 4 figs.

  12. Surface Properties of SiC Layer Grown by Molecular Beam Epitaxy (MBE) with Helicon Sputtering Molecular Beam Source

    NASA Astrophysics Data System (ADS)

    Kakuta, Akira; Moronuki, Nobuyuki; Furukawa, Yuji

    Although there have been some attempts to produce a monocrystalline silicon carbide (SiC) flat surface, the surface properties, such as surface roughness, have not satisfied the required specifications. In this study, we apply a helicon sputtering device to molecular beam epitaxy (MBE) to improve those properties. The helicon sputtering device was used as a molecular beam source for generating a Si molecular beam, where the electric field caused by the helicon coil supplied energy to the sputtered Si molecules. The amount of energy was controlled by the electric power applied to the coil. High-purity acetylene gas was used as the carbon (C) molecular beam source. The substrate was a monocrystalline (111) Si wafer. With the increase of the electric power, that is, the supply of high energy to molecules, the roughness of the surface was improved. A uniform mirror surface of monocrystalline SiC was produced over the entire substrate with a roughness of 1nm (Ra) order.

  13. Improving the laser damage resistance of oxide thin films and multilayers via tailoring ion beam sputtering parameters

    NASA Astrophysics Data System (ADS)

    Cosar, M. B.; Ozhan, A. E. S.; Aydogdu, G. H.

    2015-05-01

    Ion beam sputtering is one of the widely used methods for manufacturing laser optical components due to its advantages such as uniformity, reproducibility, suitability for multilayer coatings and growth of dielectric materials with high packing densities. In this study, single Ta2O5 layers and Ta2O5/SiO2 heterostructures were deposited on optical quality glass substrates by dual ion beam sputtering. We focused on the effect of deposition conditions like substrate cleaning, assistance by 12 cm diameter ion beam source and oxygen partial pressure on the laser-induced damage threshold of Ta2O5 single layers. Afterwards, the obtained information is employed to a sample design and produces a Ta2O5/SiO2 multilayer structure demonstrating low laser-induced damage without a post treatment procedure.

  14. Particle beam experiments for the analysis of reactive sputtering processes in metals and polymer surfaces

    SciTech Connect

    Corbella, Carles; Grosse-Kreul, Simon; Kreiter, Oliver; Arcos, Teresa de los; Benedikt, Jan; Keudell, Achim von

    2013-10-15

    A beam experiment is presented to study heterogeneous reactions relevant to plasma-surface interactions in reactive sputtering applications. Atom and ion sources are focused onto the sample to expose it to quantified beams of oxygen, nitrogen, hydrogen, noble gas ions, and metal vapor. The heterogeneous surface processes are monitored in situ by means of a quartz crystal microbalance and Fourier transform infrared spectroscopy. Two examples illustrate the capabilities of the particle beam setup: oxidation and nitriding of aluminum as a model of target poisoning during reactive magnetron sputtering, and plasma pre-treatment of polymers (PET, PP)

  15. Particle beam experiments for the analysis of reactive sputtering processes in metals and polymer surfaces

    NASA Astrophysics Data System (ADS)

    Corbella, Carles; Grosse-Kreul, Simon; Kreiter, Oliver; de los Arcos, Teresa; Benedikt, Jan; von Keudell, Achim

    2013-10-01

    A beam experiment is presented to study heterogeneous reactions relevant to plasma-surface interactions in reactive sputtering applications. Atom and ion sources are focused onto the sample to expose it to quantified beams of oxygen, nitrogen, hydrogen, noble gas ions, and metal vapor. The heterogeneous surface processes are monitored in situ by means of a quartz crystal microbalance and Fourier transform infrared spectroscopy. Two examples illustrate the capabilities of the particle beam setup: oxidation and nitriding of aluminum as a model of target poisoning during reactive magnetron sputtering, and plasma pre-treatment of polymers (PET, PP).

  16. Microstructural comparisons of ultrathin Cu films deposited by ion-beam and dc-magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Prater, W. L.; Allen, E. L.; Lee, W.-Y.; Toney, M. F.; Kellock, A.; Daniels, J. S.; Hedstrom, J. A.; Harrell, T.

    2005-05-01

    We report and contrast both the electrical resistance and the microstructure of copper thin films deposited in an oxygen-containing atmosphere by ion-beam and dc-magnetron sputtering. For films with thicknesses of 5 nm or less, the resistivity of the Cu films is minimized at oxygen concentrations ranging from 0.2% to 1% for dc-magnetron sputtering and 6%-10% for ion-beam sputtering. Films sputtered under both conditions show a similar decrease of interface roughness with increasing oxygen concentration, although the magnetron-deposited films are smoother. The dc-magnetron-produced films have higher resistivity, have smaller Cu grains, and contain a higher concentration of cuprous oxide particles. We discuss the mechanisms leading to the grain refinement and the consequent reduced resistivity in both types of films.

  17. Peculiarities of temperature dependent ion beam sputtering and channeling of crystalline bismuth.

    PubMed

    Langegger, Rupert; Hradil, Klaudia; Steiger-Thirsfeld, Andreas; Bertagnolli, Emmerich; Lugstein, Alois

    2014-08-01

    In this paper, we report on the surface evolution of focused ion beam treated single crystalline Bi(001) with respect to different beam incidence angles and channeling effects. 'Erosive' sputtering appears to be the dominant mechanism at room temperature (RT) and diffusion processes during sputtering seem to play only a minor role for the surface evolution of Bi. The sputtering yield of Bi(001) shows anomalous behavior when increasing the beam incidence angle along particular azimuthal angles of the specimen. The behavior of the sputtering yield could be related to channeling effects and the relevant channeling directions are identified. Dynamic annealing processes during ion irradiation retain the crystalline quality of the Bi specimen allowing ion channeling at RT. Lowering the specimen temperature to T = -188 °C reduces dynamic annealing processes and thereby disables channeling effects. Furthermore unexpected features are observed at normal beam incidence angle. Spike-like features appear during the ion beam induced erosion, whose growth directions are not determined by the ion beam but by the channeling directions of the Bi specimen.

  18. Fabrication of OSOS cells by neutral ion beam sputtering. [Oxide Semiconductor On Silicon solar cells

    NASA Technical Reports Server (NTRS)

    Burk, D. E.; Dubow, J. B.; Sites, J. R.

    1976-01-01

    Oxide semiconductor on silicon (OSOS) solar cells have been fabricated from various indium tin oxide (In2O3)x(SnO2)1-x compositions sputtered onto p-type single crystal silicon substrates with a neutralized argon ion beam. High temperature processing or annealing was not required. The highest efficiency was achieved with x = 0.91 and was 12 percent. The cells are environmentally rugged, chemically stable, and show promise for still higher efficiencies. Moreover, the ion beam sputtering fabrication technique is amenable to low cost, continuous processing.

  19. Ion beam sputter modification of the surface morphology of biological implants

    NASA Technical Reports Server (NTRS)

    Weigand, A. J.; Banks, B. A.

    1976-01-01

    The surface chemistry and texture of materials used for biological implants may significantly influence their performance and biocompatibility. Recent interest in the microscopic control of implant surface texture has led to the evaluation of ion beam sputtering as a potentially useful surface roughening technique. Ion sources, similar to electron bombardment ion thrusters designed for propulsive applications, are used to roughen the surfaces of various biocompatible alloys or polymer materials. These materials are typically used for dental implants, orthopedic prostheses, vascular prostheses, and artificial heart components. Masking techniques and resulting surface textures are described along with progress concerning evaluation of the biological response to the ion beam sputtered surfaces.

  20. Ion-beam-sputter modification of the surface morphology of biological implants

    NASA Technical Reports Server (NTRS)

    Weigand, A. J.; Banks, B. A.

    1977-01-01

    The surface chemistry and texture of materials used for biological implants may significantly influence their performance and biocompatibility. Recent interest in the microscopic control of implant surface texture has led to the evaluation of ion-beam sputtering as a potentially useful surface roughening technique. Ion sources, similar to electron-bombardment ion thrusters designed for propulsive applications, are used to roughen the surfaces of various biocompatible alloys or polymer materials. These materials are typically used for dental implants, orthopedic prostheses, vascular prostheses, and artificial heart components. Masking techniques and resulting surface textures are described along with progress concerning evaluation of the biological response to the ion-beam-sputtered surfaces.

  1. Contamination removal by ion sputtering

    NASA Astrophysics Data System (ADS)

    Shaw, Christopher G.

    1990-11-01

    Experimental investigations are described for ion-beam sputtering and RF-plasma sputtering to determine the effectiveness of the methods for removing contaminants from an optical surface. The effects of ion-beam sputtering are tested with an ion gun and measured by mounting a 5-MHz quartz-crystal microbalance on a sample holder and simulating spacecraft contamination. RF-plasma sputtering involves the application of an alternating electric field to opposing electrodes immersed in a low density gas, and is tested with the same setup. The energy dependence of the sputtering yields is measured to determine whether the different contaminants are removed and whether the mirror surface is affected. Ion-beam sputtering removes all contaminants tested, but also affects the mirror surface at high energies. When the correct DC bias is applied, RF sputtering can remove the contaminants without removing the metal-mirror surface.

  2. Ion beam sputtering of Ti: Influence of process parameters on angular and energy distribution of sputtered and backscattered particles

    NASA Astrophysics Data System (ADS)

    Lautenschläger, T.; Feder, R.; Neumann, H.; Rice, C.; Schubert, M.; Bundesmann, C.

    2016-10-01

    In the present study, the influence of ion energy and geometrical parameters onto the angular and energy distribution of secondary particles for sputtering a Ti target with Ar ions is investigated. The angular distribution of the particle flux of the sputtered Ti atoms was determined by the collection method, i.e. by growing Ti films and measuring their thickness. The formal description of the particle flux can be realized by dividing it into an isotropic and an anisotropic part. The experimental data show that increasing the ion energy or decreasing the ion incidence angle lead to an increase of the isotropic part, which is in good agreement with basic sputtering theory. The energy distribution of the secondary ions was measured using an energy-selective mass spectrometer. The energy distribution of the sputtered target ions shows a maximum at an energy between 10 eV and 20 eV followed by a decay proportional to E-n, which is in principle in accordance with Thompson's theory, followed by a high energetic tail. When the sum of incidence angle and emission angle is increased, the high-energetic tail expands to higher energies and an additional peak due to direct sputtering events may occur. In the case of backscattered primary Ar ions, a maximum at an energy between 5 eV and 10 eV appears and, depending on the scattering geometry, an additional broad peak at a higher energy due to direct scattering events is observed. The center energy of the additional structure shifts systematically to higher energies with decreasing scattering angle or increasing ion energy. The experimental results are compared to calculations based on simple elastic two-particle-interaction theory and to simulations done with the Monte Carlo code SDTrimSP. Both confirm in principle the experimental findings.

  3. Monte Carlo simulations of nanoscale focused neon ion beam sputtering of copper: elucidating resolution limits and sub-surface damage

    NASA Astrophysics Data System (ADS)

    Timilsina, R.; Tan, S.; Livengood, R.; Rack, P. D.

    2014-12-01

    A three dimensional Monte Carlo simulation program was developed to model physical sputtering and to emulate vias nanomachined by the gas field ion microscope. Experimental and simulation results of focused neon ion beam induced sputtering of copper are presented and compared to previously published experiments. The simulation elucidates the nanostructure evolution during the physical sputtering of high aspect ratio nanoscale features. Quantitative information such as the energy-dependent sputtering yields, dose dependent aspect ratios, and resolution-limiting effects are discussed. Furthermore, the nuclear energy loss and implant concentration beneath the etch front is correlated with the sub-surface damage revealed by transmission electron microscopy at different beam energies.

  4. Monte Carlo simulations of nanoscale focused neon ion beam sputtering of copper: elucidating resolution limits and sub-surface damage.

    PubMed

    Timilsina, R; Tan, S; Livengood, R; Rack, P D

    2014-12-01

    A three dimensional Monte Carlo simulation program was developed to model physical sputtering and to emulate vias nanomachined by the gas field ion microscope. Experimental and simulation results of focused neon ion beam induced sputtering of copper are presented and compared to previously published experiments. The simulation elucidates the nanostructure evolution during the physical sputtering of high aspect ratio nanoscale features. Quantitative information such as the energy-dependent sputtering yields, dose dependent aspect ratios, and resolution-limiting effects are discussed. Furthermore, the nuclear energy loss and implant concentration beneath the etch front is correlated with the sub-surface damage revealed by transmission electron microscopy at different beam energies.

  5. Monte Carlo simulations of nanoscale focused neon ion beam sputtering of copper: elucidating resolution limits and sub-surface damage.

    PubMed

    Timilsina, R; Tan, S; Livengood, R; Rack, P D

    2014-12-01

    A three dimensional Monte Carlo simulation program was developed to model physical sputtering and to emulate vias nanomachined by the gas field ion microscope. Experimental and simulation results of focused neon ion beam induced sputtering of copper are presented and compared to previously published experiments. The simulation elucidates the nanostructure evolution during the physical sputtering of high aspect ratio nanoscale features. Quantitative information such as the energy-dependent sputtering yields, dose dependent aspect ratios, and resolution-limiting effects are discussed. Furthermore, the nuclear energy loss and implant concentration beneath the etch front is correlated with the sub-surface damage revealed by transmission electron microscopy at different beam energies. PMID:25387461

  6. Effects of polycrystallinity in nano patterning by ion-beam sputtering

    SciTech Connect

    Yoon, Sun Mi; Kim, J.-S.; Yoon, D.; Cheong, H.; Kim, Y.; Lee, H. H.

    2014-07-14

    Employing graphites with distinctly different mean grain sizes, we study the effects of polycrystallinity on the pattern formation by ion-beam sputtering. The grains influence the growth of the ripples in a highly anisotropic fashion; both the mean uninterrupted ripple length along the ridges and the surface width depend on the mean size of the grains, which is attributed to the large sputter yield at the grain boundary compared with that on the terrace. In contrast, the ripple wavelength does not depend on the mean size of the grains, indicating that the mass transport across the grain boundaries should efficiently proceed by both thermal diffusion and ion-induced processes.

  7. Determining the sputter yields of molybdenum in low-index crystal planes via electron backscattered diffraction, focused ion beam and atomic force microscope

    SciTech Connect

    Huang, H.S.; Chiu, C.H.; Hong, I.T.; Tung, H.C.; Chien, F.S.-S.

    2013-09-15

    Previous literature has used several monocrystalline sputtering targets with various crystalline planes, respectively, to investigate the variations of the sputter yield of materials in different crystalline orientations. This study presents a method to measure the sputtered yields of Mo for the three low-index planes (100), (110), and (111), through using an easily made polycrystalline target. The procedure was firstly to use electron backscattered diffraction to identify the grain positions of the three crystalline planes, and then use a focused ion beam to perform the micro-milling of each identified grain, and finally the sputter yields were calculated from the removed volumes, which were measured by atomic force microscope. Experimental results showed that the sputter yield of the primary orientations for Mo varied as Y{sub (110)} > Y{sub (100)} > Y{sub (111)}, coincidental with the ranking of their planar atomic packing densities. The concept of transparency of ion in the crystalline substance was applied to elucidate these results. In addition, the result of (110) orientation exhibiting higher sputter yield is helpful for us to develop a Mo target with a higher deposition rate for use in industry. By changing the deformation process from straight rolling to cross rolling, the (110) texture intensity of the Mo target was significantly improved, and thus enhanced the deposition rate. - Highlights: • We used EBSD, FIB and AFM to measure the sputter yields of Mo in low-index planes. • The sputter yield of the primary orientations for Mo varied as Y{sub (110)} > Y{sub (100)} > Y{sub (111)}. • The transparency of ion was used to elucidate the differences in the sputter yield. • We improved the sputter rate of polycrystalline Mo target by adjusting its texture.

  8. Nanopatterning of mica surface under low energy ion beam sputtering

    SciTech Connect

    Metya, A.; Ghose, D.; Mollick, S. A.; Majumdar, A.

    2012-04-01

    Irradiation of crystalline muscovite mica samples by 500 eV Ar{sup +} ions at different incident angles can induce significant surface morphological variations. A periodic ripple pattern of nano-dimensions forms in the angle window 47 deg. -70 deg. . On the other hand, tilted conical protrusions develop on the surface at grazing incidence angles around 80 deg. . From the derivative of the topographic images the distribution of the side-facet slopes in the ion incidence plane are measured, which is found to be strongly related to the pattern morphology. Additionally, it has been shown that, for the ripple structures, the base angles can be tuned by changing the ion fluence. An asymmetric sawtooth profile of the ripples obtained at low fluence is transformed to a symmetrical triangular profile at high fluence. As the slopes are found to be small, the pattern formation is not provoked by the gradient-dependent erosion mechanism rather it is the general effect of the curvature-dependent sputtering phenomena.

  9. Investigation of surface characteristics evolution and laser damage performance of fused silica during ion-beam sputtering

    NASA Astrophysics Data System (ADS)

    Xu, Mingjin; Dai, Yifan; Zhou, Lin; Shi, Feng; Wan, Wen; Xie, Xuhui; Sui, Tingting

    2016-08-01

    Surface characteristics have great influence on the optical properties especially the laser radiation resistivity of optics. In this paper, the surface characteristics evolutions of fused silica during ion-beam sputtering and their effects on the laser damage performance were investigated. The results show that roughness change is strongly removal depth dependent and a super-smooth surface (0.25 nm RMS) can be obtained by the ion-induced smoothing effect. The concentration of metal impurities (especially Ce element) in subsurface can be effectively decreased after the removal of polishing re-deposition layer. During ion-beam sputtering process, the plastic scratches can be removed while the brittle cracks can be broadened and passivated without increase in the depth direction. Laser damage threshold of fused silica improved by 36% after ion-beam sputtering treatment. Research results have a guiding significance for ion-beam sputtering process technology of fused silica optics.

  10. Effect of surface texture by ion beam sputtering on implant biocompatibility and soft tissue attachment

    NASA Technical Reports Server (NTRS)

    Gibbons, D. F.

    1977-01-01

    The objectives in this report were to use the ion beam sputtering technique to produce surface textures on polymers, metals, and ceramics. The morphology of the texture was altered by varying both the width and depth of the square pits which were formed by ion beam erosion. The width of the ribs separating the pits were defined by the mask used to produce the texture. The area of the surface containing pits varies as the width was changed. The biological parameters used to evaluate the biological response to the texture were: (1) fibrous capsule and inflammatory response in subcutaneous soft tissue; (2) strength of the mechanical attachment of the textured surface by the soft tissue; and (3) morphology of the epidermal layer interfacing the textured surface of percutaneous connectors. Because the sputter yield on teflon ribs was approximately an order of magnitude larger than any other material the majority of the measurements presented in the report were obtained with teflon.

  11. Calcium phosphate coatings produced by radiofrequency magnetron sputtering method

    NASA Astrophysics Data System (ADS)

    Bolbasov, E. N.; Zheravin, A. A.; Klimov, I. A.; Kulbakin, D. E.; Perelmuter, V. M.; Tverdokhlebov, S. I.; Cherdyntseva, N. V.; Choinzonov, E. L.

    2016-08-01

    Calcium phosphate coatings on titanium implants surface, produced by radio frequency (RF) magnetron sputtering method with hydroxyapatite solid target were investigated. It was found that produced coatings are calcium deficient compared to stoichiometric hydroxyapatite. The surface of the coatings is highly rough at the nanoscale and highly elastic. In vivo experiments on rats revealed that titanium implants with the calcium phosphate coatings do not cause negative tissue reaction after 6 months incubation period.

  12. Method and apparatus for improved high power impulse magnetron sputtering

    DOEpatents

    Anders, Andre

    2013-11-05

    A high power impulse magnetron sputtering apparatus and method using a vacuum chamber with a magnetron target and a substrate positioned in the vacuum chamber. A field coil being positioned between the magnetron target and substrate, and a pulsed power supply and/or a coil bias power supply connected to the field coil. The pulsed power supply connected to the field coil, and the pulsed power supply outputting power pulse widths of greater that 100 .mu.s.

  13. Nitrogen incorporation in carbon nitride films produced by direct and dual ion-beam sputtering

    SciTech Connect

    Abrasonis, G.; Gago, R.; Jimenez, I.; Kreissig, U.; Kolitsch, A.; Moeller, W.

    2005-10-01

    Carbon (C) and carbon nitride (CN{sub x}) films were grown on Si(100) substrates by direct ion-beam sputtering (IBS) of a carbon target at different substrate temperatures (room temperature-450 deg. C) and Ar/N{sub 2} sputtering gas mixtures. Additionally, the effect of concurrent nitrogen-ion assistance during the growth of CN{sub x} films by IBS was also investigated. The samples were analyzed by elastic recoil detection analysis (ERDA) and x-ray absorption near-edge spectroscopy (XANES). The ERDA results showed that significant nitrogen amount (up to 20 at. %) was incorporated in the films, without any other nitrogen source but the N{sub 2}-containing sputtering gas. The nitrogen concentration is proportional to the N{sub 2} content in the sputtering beam and no saturation limit is reached under the present working conditions. The film areal density derived from ERDA revealed a decrease in the amount of deposited material at increasing growth temperature, with a correlation between the C and N losses. The XANES results indicate that N atoms are efficiently incorporated into the carbon network and can be found in different bonding environments, such as pyridinelike, nitrilelike, graphitelike, and embedded N{sub 2} molecules. The contribution of molecular and pyridinelike nitrogen decreases when the temperature increases while the contribution of the nitrilelike nitrogen increases. The concurrent nitrogen ion assistance resulted in the significant increase of the nitrogen content in the film but it induced a further reduction of the deposited material. Additionally, the assisting ions inhibited the formation of the nitrilelike configurations while promoting nitrogen environments in graphitelike positions. The nitrogen incorporation and release mechanisms are discussed in terms of film growth precursors, ion bombardment effects, and chemical sputtering.

  14. Method and apparatus for sputtering utilizing an apertured electrode and a pulsed substrate bias

    NASA Technical Reports Server (NTRS)

    Przybyszewski, J. S.; Shaltens, R. K. (Inventor)

    1973-01-01

    The method and equipment used for sputtering by use of an apertured electrode and a pulsed substrate bias are discussed. The technique combines the advantages of ion plating with the versatility of a radio frequency sputtered source. Electroplating is accomplished by passing a pulsed high voltage direct current to the article being plated during radio frequency sputtering.

  15. Ion beam analysis and co-sputtering simulation (CO-SS) of bi-metal films produced by magnetron co-sputtering

    NASA Astrophysics Data System (ADS)

    Cruz, J.; Andrade, E.; Muhl, S.; Canto, C.; de Lucio, O.; Chávez, E.; Rocha, M. F.; Garcés-Medina, E.

    2016-03-01

    Magnetron sputtering is widely used to deposit thin films on different types of substrates. An important application of this method is to make multicomponent thin films using co-sputtering, where two or more elements are included in the target. The thickness and elemental composition of the films depend on the experimental parameters used, the system geometry and the spatial distribution of the elements in the target. If the target is made of two spatially separate pieces of the materials, then the composition of the deposit depends on a combination of the relative areas, the sputtering yield and the angular distribution of the emission of the sputtered flux of each material. In this work, a co-sputtering simulation program, known as CO-SS, was developed to simulate the thickness and composition of metal films produced by DC magnetron sputtering (Al) and co-sputtering (Al + Ti). The CO-SS code models the angular distribution of particles ejected by sputtering from the target, where this is assumed to vary as cosn β , where n is a free parameter and β is the angle of ejection relative to the normal to the surface of the target, and the sputtering yield of each material. The program also takes into account other geometry factors such as the distance between the target and the substrate, and the size of the substrate. Rutherford backscattering (RBS) using 4He was employed to measure the thickness and the composition of the films deposited on glass cover slides in order to assess the CO-SS program. The film thickness was also measured by profilometry. The CO-SS code was found to accurately model the experimental results for both the Al and Ti/Al films. The CO-SS code is freely available for use from http://demonstrations.wolfram.com/CoSputteringSimulationCOSS/.

  16. Kinetic Monte Carlo simulation of self-organized pattern formation induced by ion beam sputtering using crater functions

    NASA Astrophysics Data System (ADS)

    Yang, Zhangcan; Lively, Michael A.; Allain, Jean Paul

    2015-02-01

    The production of self-organized nanostructures by ion beam sputtering has been of keen interest to researchers for many decades. Despite numerous experimental and theoretical efforts to understand ion-induced nanostructures, there are still many basic questions open to discussion, such as the role of erosion or curvature-dependent sputtering. In this work, a hybrid MD/kMC (molecular dynamics/kinetic Monte Carlo) multiscale atomistic model is developed to investigate these knowledge gaps, and its predictive ability is validated across the experimental parameter space. This model uses crater functions, which were obtained from MD simulations, to model the prompt mass redistribution due to single-ion impacts. Defect migration, which is missing from previous models that use crater functions, is treated by a kMC Arrhenius method. Using this model, a systematic study was performed for silicon bombarded by Ar+ ions of various energies (100 eV, 250 eV, 500 eV, 700 eV, and 1000 eV) at incidence angles of 0∘ to 80∘. The simulation results were compared with experimental findings, showing good agreement in many aspects of surface evolution, such as the phase diagram. The underestimation of the ripple wavelength by the simulations suggests that surface diffusion is not the main smoothening mechanism for ion-induced pattern formation. Furthermore, the simulated results were compared with moment-description continuum theory and found to give better results, as the simulation did not suffer from the same mathematical inconsistencies as the continuum model. The key finding was that redistributive effects are dominant in the formation of flat surfaces and parallel-mode ripples, but erosive effects are dominant at high angles when perpendicular-mode ripples are formed. Ion irradiation with simultaneous sample rotation was also simulated, resulting in arrays of square-ordered dots. The patterns obtained from sample rotation were strongly correlated to the rotation speed and to

  17. Ion beam sputter deposition of TiNi shape memory alloy thin films

    NASA Astrophysics Data System (ADS)

    Davies, Sam T.; Tsuchiya, Kazuyoshi

    1999-08-01

    The development of functional or smart materials for integration into microsystem is of increasing interest. An example is the shape memory effect exhibited by certain metal alloys which, in principle, can be exploited in the fabrication of micro-scale manipulators or actuators, thereby providing on-chip micromechanical functionality. We have investigated an ion beam sputter deposition process for the growth of TiNi shape memory alloy thin films and demonstrated the required control to produce equiatomic composition, uniform coverage and atomic layer-by-layer growth rates on engineering surfaces. The process uses argon ions at intermediate energy produced by a Kaufman-type ion source to sputter non-alloyed targets of high purity titanium and nickel. Precise measurements of deposition rates allows compositional control during thin film growth. As the sputtering targets and substrates are remote from the discharge plasma, deposition occurs under good vacuum of approximately 10-6 mtorr thus promoting high quality films. Furthermore, the ion beam energetics allow deposition at relatively low substrate temperatures of < 150 degrees C with as-deposited films exhibiting shape memory properties without post-process high temperature annealing. Thermal imagin is used to monitor changes which are characteristic of the shape memory effect and is indicative of changes in specific heat capacity and thermal conductivity as the TiNi shape memory alloy undergoes martensitic to austenitic phase transformations.

  18. Ion beam sputter etching of orthopedic implanted alloy MP35N and resulting effects on fatigue

    NASA Technical Reports Server (NTRS)

    Wintucky, E. G.; Christopher, M.; Bahnuik, E.; Wang, S.

    1981-01-01

    The effects of two types of argon ion sputter etched surface structures on the tensile stress fatigue properties of orthopedic implant alloy MP35N were investigated. One surface structure was a natural texture resulting from direct bombardment by 1 keV argon ions. The other structure was a pattern of square holes milled into the surface by a 1 keV argon ion beam through a Ni screen mask. The etched surfaces were subjected to tensile stress only in fatigue tests designed to simulate the cyclic load conditions experienced by the stems of artificial hip joint implants. Both types of sputter etched surface structures were found to reduce the fatigue strength below that of smooth surface MP35N.

  19. Transparent aluminium nanowire electrodes with optical and electrical anisotropic response fabricated by defocused ion beam sputtering

    NASA Astrophysics Data System (ADS)

    Repetto, Diego; Giordano, Maria Caterina; Martella, Christian; Buatier de Mongeot, Francesco

    2015-02-01

    Self-organized Al nanowire (NW) electrodes have been obtained by defocused Ion Beam Sputtering (IBS) of polycrystalline Al films grown by sputter deposition. The electrical sheet resistance of the electrode has been acquired in situ during ion bombardment of the samples, evidencing an increase of the electronic transport anisotropy as a function of ion fluence between the two directions parallel and orthogonal to the NWs axis. Optical spectra in transmission also show a large dichroism between the two directions, suggesting the role of localized plasmons in the UV spectral range. The results show that Al NW electrodes, prepared under experimental conditions which are compatible with those of conventional industrial coaters and implanters, could represent a low cost alternative to the transparent conductive oxides employed in optoelectronic devices.

  20. Large area ion beam sputtered YBa2Cu3O(7-delta) films for novel device structures

    NASA Astrophysics Data System (ADS)

    Gauzzi, A.; Lucia, M. L.; Kellett, B. J.; James, J. H.; Pavuna, D.

    1992-03-01

    A simple single-target ion-beam system is employed to manufacture large areas of uniformly superconducting YBa2Cu3O(7-delta) films which can be reproduced. The required '123' stoichiometry is transferred from the target to the substrate when ion-beam power, target/ion-beam angle, and target temperature are adequately controlled. Ion-beam sputtering is experimentally demonstrated to be an effective technique for producing homogeneous YBa2Cu3O(7-delta) films.

  1. Detailed subsurface damage measurement and efficient damage-free fabrication of fused silica optics assisted by ion beam sputtering.

    PubMed

    Liao, Wenlin; Dai, Yifan; Liu, Zongzheng; Xie, Xuhui; Nie, Xuqing; Xu, Mingjin

    2016-02-22

    Formation of subsurface damage has an inseparable relationship with microscopic material behaviors. In this work, our research results indicate that the formation process of subsurface damage often accompanies with the local densification effect of fused silica material, which seriously influences microscopic material properties. Interestingly, we find ion beam sputtering (IBS) is very sensitive to the local densification, and this microscopic phenomenon makes IBS as a promising technique for the detection of nanoscale subsurface damages. Additionally, to control the densification effect and subsurface damage during the fabrication of high-performance optical components, a combined polishing technology integrating chemical-mechanical polishing (CMP) and ion beam figuring (IBF) is proposed. With this combined technology, fused silica without subsurface damage is obtained through the final experimental investigation, which demonstrates the feasibility of our proposed method.

  2. Method of making segmented pyrolytic graphite sputtering targets

    DOEpatents

    McKernan, Mark A.; Alford, Craig S.; Makowiecki, Daniel M.; Chen, Chih-Wen

    1994-01-01

    Anisotropic pyrolytic graphite wafers are oriented and bonded together such that the graphite's high thermal conductivity planes are maximized along the back surface of the segmented pyrolytic graphite target to allow for optimum heat conduction away from the sputter target's sputtering surface and to allow for maximum energy transmission from the target's sputtering surface.

  3. Method of making segmented pyrolytic graphite sputtering targets

    DOEpatents

    McKernan, M.A.; Alford, C.S.; Makowiecki, D.M.; Chen, C.W.

    1994-02-08

    Anisotropic pyrolytic graphite wafers are oriented and bonded together such that the graphite's high thermal conductivity planes are maximized along the back surface of the segmented pyrolytic graphite target to allow for optimum heat conduction away from the sputter target's sputtering surface and to allow for maximum energy transmission from the target's sputtering surface. 2 figures.

  4. Ion beam sputter-etched ventricular catheter for hydrocephalus shunt

    NASA Technical Reports Server (NTRS)

    Banks, B. A. (Inventor)

    1983-01-01

    A cerebrospinal fluid shunt in the form of a ventricular catheter for controlling the condition of hydrocephalus by relieving the excessive cerebrospinal fluid pressure is described. A method for fabrication of the catheter and shunting the cerebral fluid from the cerebral ventricles to other areas of the body is also considered. Shunt flow failure occurs if the ventricle collapse due to improper valve function causing overdrainage. The ventricular catheter comprises a multiplicity of inlet microtubules. Each microtubule has both a large openings at its inlet end and a multiplicity of microscopic openings along its lateral surfaces.

  5. Physical processes in directed ion beam sputtering. Ph.D. Thesis

    NASA Technical Reports Server (NTRS)

    Robinson, R. S.

    1979-01-01

    The general operation of a discharge chamber for the production of ions is described. A model is presented for the magnetic containment of both primary and secondary or Maxwellian electrons in the discharge plasma. Cross sections were calculated for energy and momentum transfer in binary collisions between like pairs of Ar, Kr, and Xe atoms in the energy range from about 1 eV to 1000 eV. These calculations were made from available pair interaction potentials using a classical model. Experimental data from the literature were fit to a theoretical expression for the Ar resonance charge exchange cross section over the same energy range. A model was developed that describes the processes of conical texturing of a surface due to simultaneous directed ion beam etching and sputter deposition of an impurity material. This model accurately predicts both a minimum temperature for texturing to take place and the variation of cone density with temperature. It also provides the correct order of magnitude of cone separation. It was predicted from the model, and subsequently verified experimentally, that a high sputter yield material could serve as a seed for coning of a lower sputter yield substrate. Seeding geometries and seed deposition rates were studied to obtain an important input to the theoretical texturing model.

  6. ITO/InP solar cells: A comparison of devices fabricated by ion beam and RF sputtering of the ITO

    NASA Technical Reports Server (NTRS)

    Coutts, T. J.

    1987-01-01

    This work was performed with the view of elucidating the behavior of indium tin oxide/indium phosphide (ITO/InP) solar cells prepared by RF and ion beam sputtering. It was found that using RF sputter deposition of the ITO always leads to more efficient devices than ion beam sputter deposition. An important aspect of the former technique is the exposure of the single crystal p-InP substrates to a very low plasma power prior to deposition. Substrates treated in this manner have also been used for ion beam deposition of ITO. In this case the cells behave very similarly to the RF deposited cells, thus suggesting that the lower power plasma exposure (LPPE) is the crucial process step.

  7. The ion beam sputtering facility at KURRI: Coatings for advanced neutron optical devices

    NASA Astrophysics Data System (ADS)

    Hino, Masahiro; Oda, Tatsuro; Kitaguchi, Masaaki; Yamada, Norifumi L.; Tasaki, Seiji; Kawabata, Yuji

    2015-10-01

    We describe a film coating facility for the development of multilayer mirrors for use in neutron optical devices that handle slow neutron beams. Recently, we succeeded in fabricating a large neutron supermirror with high reflectivity using an ion beam sputtering system (KUR-IBS), as well as all neutron supermirrors in two neutron guide tubes at BL06 at J-PARC/MLF. We also realized a large flexible self-standing m=5 NiC/Ti supermirror and very small d-spacing (d=1.65 nm) multilayer sheets. In this paper, we present an overview of the performance and utility of non-magnetic neutron multilayer mirrors fabricated with the KUR-IBS

  8. Ion Beam Sputter Fabrication of Micro-Grooving and Micro-Threading Tools

    SciTech Connect

    ADAMS,DAVID P.; VASILE,M.J.; KRISHNAN,A.S.M.

    1999-11-05

    This paper presents techniques for fabricating microscopic, nonplanar features in a variety of materials. Micro-grooving and micro-threading tools having cutting dimensions of 10-30{micro}m are made by focused ion beam sputtering and used in ultra-precision machining. Tool fabrication involves directing a 20 keV gallium beam at polished cylindrical punches made of cobalt M42 high-speed steel or C2 tungsten carbide. This creates cutting edges having radii of curvature less than 0.4 {micro}m, and rake features similar to conventional lathe tools. Clearance for minimizing frictional drag of a tool results from the sputter yield dependence on ion herd target incidence angle. Numerically controlled, ultra-precision machining with micro-grooving tools results in a close matching between tool width and feature size. Microtools controllably machine 13 {micro}m wide, 4 {micro}m deep, helical grooves in polymethyl methacrylate and 6061-T6 Al cylindrical substrates. Micro-grooving tools also fabricate sinusoidal waveform features in polished metal substrates.

  9. Sputtering: A vacuum deposition method for coating material

    NASA Technical Reports Server (NTRS)

    Spalvins, T.

    1972-01-01

    The sputtering process is described in terms of its features: versatility, momentum transfer, configuration of target, precise controls and the relatively slow deposition rate. Sputtered films are evaluated in terms of adherence, coherence, and internal stresses. The strong adherence is attributed to the high kinetic energies of the sputtered material, sputter etched (cleaned) surface, and the submicroscopic particle size. An illustration is a sputtered solid film lubricant such as MoS2. Friction tests were conducted on a thin, 2000 A deg thick MoS2 film. These films are very dense and without observable pinholes, and the particle to particle cohesion is strong. Tolerances (film thickness) can be controlled to a millionth of a centimeter. Very adherent films of sputtered Teflon can be deposited in a single operation on any type of material (metal, glass, paper) and on any geometrical configuration with a dense adherent film.

  10. Correlation between properties of HfO2 films and preparing parameters by ion beam sputtering deposition.

    PubMed

    Liu, Huasong; Jiang, Yugang; Wang, Lishuan; Leng, Jian; Sun, Peng; Zhuang, Kewen; Ji, Yiqin; Cheng, Xinbin; Jiao, Hongfei; Wang, Zhanshan; Wu, Bingjun

    2014-02-01

    Ion beam sputtering is one of the most important technologies for preparing hafnium dioxide thin films. In this paper, the correlation between properties of hafnium dioxide thin films and preparing parameters was systematically researched by using the orthogonal experiment design method. The properties of hafnium oxide films (refractive index, extinction coefficient, deposition rate, stress, and inhomogeneity of refractive index) were studied. The refractive index, extinction coefficient, physical thickness, and inhomogeneity of refractive index were obtained by the multiple wavelength curve-fitting method from the reflectance and transmittance of single layers. The stress of thin film was measured by elastic deformation of the thin film-substrate system. An orthogonal experimental strategy was designed using substrate temperature, ion beam voltage, ion beam current, and oxygen flow rate as the variables. The experimental results indicated that the temperature of the substrate is the key influencing parameter on the properties of hafnium oxide films, while other preparing parameters are also correlated with specific properties. The experimental results are significant for selecting proper parameters for preparing hafnium oxide films with different applications.

  11. Structure and composition of zirconium carbide thin-film grown by ion beam sputtering for optical applications

    NASA Astrophysics Data System (ADS)

    Singh, Amol; Modi, Mohammed H.; Dhawan, Rajnish; Lodha, G. S.

    2014-04-01

    Thin film of compound material ZrC was deposited on Si (100) wafer using ion beam sputtering method. The deposition was carried out at room temperature and at base pressure of 3×10-5 Pa. X-ray photoelectron spectroscopy (XPS) measurements were performed for determining the surface chemical compositions. Grazing incidence x-ray reflectivity (GIXRR) measurements were performed to study the film thickness, roughness and density. From GIXRR curve roughness value of the film was found less than 1 nm indicating smooth surface morphology. Films density was found 6.51 g/cm3, which is close to bulk density. Atomic force microscopy (AFM) measurements were performed to check the surface morphology. AFM investigation showed that the film surface is smooth, which corroborate the GIXRR data. Figure 2 of the original article PDF file, as supplied to AIP Publishing, contained a PDF processing error. This article was updated on 12 May 2014 to correct that error.

  12. Comparison of AlN films grown by RF magnetron sputtering and ion-assisted molecular beam epitaxy

    SciTech Connect

    Chan, J.; Fu, T.; Cheung, N.W.; Ross, J.; Newman, N.; Rubin, M.

    1993-04-01

    Crystalline aluminum nitride (AlN) thin films were formed on various substrates by using RF magnetron sputtering of an A1 target in a nitrogen plasma and also by ion-assisted molecular beam epitaxy (IAMBE). Basal-oriented AlN/(111) Si showed a degradation of crystallinity with increased substrate temperature from 550 to 770 C, while the crystallinity of AlN/(0001) A1{sub 2}O{sub 3} samples improved from 700 to 850 C. The optical absorption characteristics of the AlN/(0001) A1{sub 2}O{sub 3} films as grown by both deposition methods revealed a decrease in subbandgap absorption with increased substrate temperature.

  13. Apparatus for and method of controlling sputter coating

    SciTech Connect

    Boys, R.

    1985-02-19

    The magnetic field of a magnetron sputter coating apparatus is controlled in response to measurements of plasma parameters to control deposition parameters, such as sputter deposition rate and material deposition thickness profile. From time to time the apparatus is standardized to change preset values for parameters of the plasma to manage the deposition parameters.

  14. Method for measuring and controlling beam current in ion beam processing

    DOEpatents

    Kearney, Patrick A.; Burkhart, Scott C.

    2003-04-29

    A method for producing film thickness control of ion beam sputter deposition films. Great improvements in film thickness control is accomplished by keeping the total current supplied to both the beam and suppressor grids of a radio frequency (RF) in beam source constant, rather than just the current supplied to the beam grid. By controlling both currents, using this method, deposition rates are more stable, and this allows the deposition of layers with extremely well controlled thicknesses to about 0.1%. The method is carried out by calculating deposition rates based on the total of the suppressor and beam currents and maintaining the total current constant by adjusting RF power which gives more consistent values.

  15. Controlled growth of few-layer hexagonal boron nitride on copper foils using ion beam sputtering deposition.

    PubMed

    Wang, Haolin; Zhang, Xingwang; Meng, Junhua; Yin, Zhigang; Liu, Xin; Zhao, Yajuan; Zhang, Liuqi

    2015-04-01

    Ion beam sputtering deposition (IBSD) is used to synthesize high quality few-layer hexagonal boron nitride (h-BN) on copper foils. Compared to the conventional chemical vapor deposition, the IBSD technique avoids the use of unconventional precursors and is much easier to control, which should be very useful for the large-scale production of h-BN in the future.

  16. Method of cold welding using ion beam technology

    NASA Technical Reports Server (NTRS)

    Sater, B. L. (Inventor)

    1981-01-01

    A method for cold welding metal joints is described. In order to remove the contamination layer on the surface of the metal, an ion beam generator is used in a vacuum environment. A gas, such as xenon or argon, is ionized and accelerated toward the metal surface. The beam of gas effectively sputters away the surface oxides and contamination layer so that clean underlying metal is exposed in the area to be welded. The use of this method allows cold welding with minimal deformation. Both similar and dissimilar metals can be cold welded with this method.

  17. Scanning-electron-microscopy observations and mechanical characteristics of ion-beam-sputtered surgical implant alloys

    NASA Technical Reports Server (NTRS)

    Weigand, A. J.; Meyer, M. L.; Ling, J. S.

    1977-01-01

    An electron bombardment ion thruster was used as an ion source to sputter the surfaces of orthopedic prosthetic metals. Scanning electron microscopy photomicrographs were made of each ion beam textured surface. The effect of ion texturing an implant surface on its bond to bone cement was investigated. A Co-Cr-W alloy and surgical stainless steel were used as representative hard tissue implant materials to determine effects of ion texturing on bulk mechanical properties. Work was done to determine the effect of substrate temperature on the development of an ion textured surface microstructure. Results indicate that the ultimate strength of the bulk materials is unchanged by ion texturing and that the microstructure will develop more rapidly if the substrate is heated prior to ion texturing.

  18. Characterization of zirconia- and niobia-silica mixture coatings produced by ion-beam sputtering

    SciTech Connect

    Melninkaitis, Andrius; Tolenis, Tomas; Mazule, Lina; Mirauskas, Julius; Sirutkaitis, Valdas; Mangote, Benoit; Fu Xinghai; Zerrad, Myriam; Gallais, Laurent; Commandre, Mireille; Kicas, Simonas; Drazdys, Ramutis

    2011-03-20

    ZrO{sub 2}-SiO{sub 2} and Nb{sub 2}O{sub 5}-SiO{sub 2} mixture coatings as well as those of pure zirconia (ZrO{sub 2}), niobia (Nb{sub 2}O{sub 5}), and silica (SiO{sub 2}) deposited by ion-beam sputtering were investigated. Refractive-index dispersions, bandgaps, and volumetric fractions of materials in mixed coatings were analyzed from spectrophotometric data. Optical scattering, surface roughness, nanostructure, and optical resistance were also studied. Zirconia-silica mixtures experience the transition from crystalline to amorphous phase by increasing the content of SiO{sub 2}. This also results in reduced surface roughness. All niobia and silica coatings and their mixtures were amorphous. The obtained laser-induced damage thresholds in the subpicosecond range also correlates with respect to the silica content in both zirconia- and niobia-silica mixtures.

  19. Laser beam pulse formatting method

    DOEpatents

    Daly, T.P.; Moses, E.I.; Patterson, R.W.; Sawicki, R.H.

    1994-08-09

    A method for formatting a laser beam pulse using one or more delay loops is disclosed. The delay loops have a partially reflective beam splitter and a plurality of highly reflective mirrors arranged such that the laser beam pulse enters into the delay loop through the beam splitter and circulates therein along a delay loop length defined by the mirrors. As the laser beam pulse circulates within the delay loop a portion thereof is emitted upon each completed circuit when the laser beam pulse strikes the beam splitter. The laser beam pulse is thereby formatted into a plurality of sub-pulses. The delay loops are used in combination to produce complex waveforms by combining the sub-pulses using additive waveform synthesis. 8 figs.

  20. Laser beam pulse formatting method

    DOEpatents

    Daly, Thomas P.; Moses, Edward I.; Patterson, Ralph W.; Sawicki, Richard H.

    1994-01-01

    A method for formatting a laser beam pulse (20) using one or more delay loops (10). The delay loops (10) have a partially reflective beam splitter (12) and a plurality of highly reflective mirrors (14) arranged such that the laser beam pulse (20) enters into the delay loop (10) through the beam splitter (12) and circulates therein along a delay loop length (24) defined by the mirrors (14). As the laser beam pulse (20) circulates within the delay loop (10) a portion thereof is emitted upon each completed circuit when the laser beam pulse (20) strikes the beam splitter (12). The laser beam pulse (20) is thereby formatted into a plurality of sub-pulses (50, 52, 54 and 56). The delay loops (10) are used in combination to produce complex waveforms by combining the sub-pulses (50, 52, 54 and 56) using additive waveform synthesis.

  1. Effect of Ar Ion Beam Pre-Treatment of Poly(ethylene terephthalate) Substrate on the Mechanical and Electrical Stability of Flexible InSnO Films Grown by Roll-to-Roll Sputtering System

    NASA Astrophysics Data System (ADS)

    Choi, Kwang-Hyuk; Kim, Han-Ki

    2013-10-01

    We investigated the effects of Ar ion beam irradiation on a flexible poly(ethylene terephthalate) (PET) substrate as surface pre-treatment method in the roll-to-roll (R2R) sputtering system and its contribution to the electrical durability of flexible InSnO (ITO) electrode upon that the flexible PET substrate under repeated mechanical stresses. It was found that the Ar ion beam irradiation of the flexible PET surface could improve an adhesion between R2R sputter-grown ITO film and the PET substrate. X-ray photoelectron spectroscopy results showed that the Ar ion beam irradiation lead to an increase of hydrophilic functional groups when the working pressure, Ar ion beam power, and exposure time increases. Repetitive bending stresses for the flexible ITO/PET film which fabricated through the surface pre-treatment by Ar ion beam irradiation showed more stable electrical durability than those of ITO films on the wet-cleaned PET substrate due to enhanced interfacial adhesion between the ITO film and PET surface. This suggests that the Ar ion beam pre-treatment before sputtering of ITO film in R2R sputtering system is an effective technique to improve the adhesion between ITO film and PET substrate.

  2. Optimization of large area YBa 2Cu 3O 7-x films by single target ion beam sputtering

    NASA Astrophysics Data System (ADS)

    Gauzzi, A.; Lucia, M. L.; Affronte, M.; Pavuna, D.

    1991-12-01

    We report on the in-situ growth over large area of high-quality homogeneous YBa 2Cu 3O 7-x films by single target ion beam sputtering. The ‘123’ stoichiometry transfer to the substrates is obtained by using sufficiently low power ion beam and a grazing angle between the ion beam and the target. The as-deposited films show consistent homogeneity and reproducible superconducting properties (ΔT c<1 K, j c(77K)>10 6 A cm -2 at 77 K) over areas larger than ≈30 cm 2.

  3. Fluoropolymer Films Deposited by Argon Ion-Beam Sputtering of Polytetrafluoroethylene

    NASA Technical Reports Server (NTRS)

    Golub, Morton A.; Banks, Bruce A.; Kliss, Mark (Technical Monitor)

    1998-01-01

    The FT-IR, XPS and UV spectra of fluoropolymer films (SPTFE-I) deposited by argon ion-beam sputtering of polytetrafluoroethylene (PTFE) were obtained and compared with prior corresponding spectra of fluoropolymer films (SPTFE-P) deposited by argon rf plasma sputtering of PTFE. Although the F/C ratios for SPTFE-I and -P (1.63 and 1.51) were similar, their structures were quite different in that there was a much higher concentration of CF2 groups in SPTFE-I than in SPTFE-P, ca. 61 and 33% of the total carbon contents, respectively. The FT-IR spectra reflect that difference, that for SPTFE-I showing a distinct doublet at 1210 and 1150 per centimeter while that for SPTFE-P presents a broad, featureless band at ca. 1250 per centimeter. The absorbance of the 1210-per centimeter band in SPTFE-I was proportional to the thickness of the film, in the range of 50-400 nanometers. The SPTFE-I was more transparent in the UV than SPTFE-P at comparable thickness. The mechanism for SPTFE-I formation likely involves "chopping off" of oligomeric segments of PTFE as an accompaniment to "plasma" polymerization of TFE monomer or other fluorocarbon fragments generated in situ from PTFE on impact with energetic Ar ions. Data are presented for SPTFE-I deposits and the associated Ar(+) bombarded PTFE targets where a fresh target was used for each run or a single target was used for a sequence of runs.

  4. Magnetron sputtering as a method of thin-film catalyst development for electrochemical sensors

    NASA Astrophysics Data System (ADS)

    Medvedeva, E. A.

    2016-07-01

    The aim of this work was to develop a thin-film Pt/C catalyst on the fluoroplastic substrates by means of the magnetron sputtering method in order to use as reference and working electrodes of electrochemical cells.

  5. Synthesis of Large-Sized Single-Crystal Hexagonal Boron Nitride Domains on Nickel Foils by Ion Beam Sputtering Deposition.

    PubMed

    Wang, Haolin; Zhang, Xingwang; Liu, Heng; Yin, Zhigang; Meng, Junhua; Xia, Jing; Meng, Xiang-Min; Wu, Jinliang; You, Jingbi

    2015-12-22

    Large-sized single-crystal h-BN domains with a lateral size up to 100 μm are synthesized on Ni foils by ion-beam sputtering deposition. The nucleation density of h-BN is dramatically decreased by reducing the concentrations of both active sites and species on the Ni surface through a brief in situ pretreatment of the substrate and optimization of the growth parameters, enabling the growth of large-sized domains.

  6. In/ITO whisker and optoelectronic properties of ITO films deposited by ion beam sputtering

    SciTech Connect

    Shen, Jung-Hsiung; Yeh, Sung-Wei; Teoh, Lay Gaik

    2012-07-15

    ITO films were deposited on a glass substrate using ion beam sputtering, with oxygen flow rates from 0.5 to 2 sccm. The films consisted of randomly oriented ITO nanoparticles and metallic indium (In) with {l_brace}101{r_brace} facets, following the specific crystallographic relationship of [010]{sub In}//[110]{sub ITO}; (001){sub In}//(001){sub ITO} with habit planes (100){sub In}//(011){sub ITO}, when fabricated using a low oxygen flow rate. Oxygen flow rate in excess of 2.0 sccm results in the growth of amorphous films. The epitaxial In nanoparticles probably act as seeds for the development of curved ITO whiskers as small as 10 nm and extend up to 100 nm in length along the [100] direction, with poorly defined shape, possibly due to the tapering and bending of the whisker to form a tilt boundary about the [011] zone axis of the ITO. The ITO whisker growth was facilitated by the In globular tips in the vapor-liquid-solid growth mechanism. The films prepared using a series of oxygen flow rates showed different chemical-bonding states, electric resistivity and optical transparency; as a result of phase and microstructural changes.

  7. The Electric, Magnetic, and Optical Characterization of Permalloy Oxide Grown by Dual-Ion Beam Sputtering

    NASA Astrophysics Data System (ADS)

    Compton, Maclyn; Leblanc, Elizabeth; Geerts, Wilhelmus; Simpson, Nelson; Robinson, Michael

    2014-03-01

    Permalloy (Ni80Fe20) is a commonly used soft magnetic material in magnetic reading heads. Its magnetic properties do not depend on stress, a parameter difficult to control in thin film devices. Permalloy Oxide (PyO) on the other hand, has a high resistivity (>4 .103 Ω cm), is anti-ferromagnetic and has recently been shown to strongly enhance the performance of lateral spin valve devices. Historically, the oxidation of permalloy has been seen as a defect that should be avoided by appropriate encapsulation and very little is known on its electric and optical properties. We deposited thin PyO films by Dual Ion Beam Sputtering (DIBS) at room temperature on various substrates. Van der Pauw and Hall measurements were carried out from 77K to 400K and at magnetic fields up to 9T in order to determine its electronic bandgap, resistivity, free carrier concentration, and its mobility. The dielectric properties and defects were studied using a CV-setup and an impedance analyzer. Magnetic measurements were conducted on a Quantum Design PPMS VSM to determine the state of oxidation. Optical properties were measured by a M2000 Woollam variable angle spectroscopic ellipsometer. These properties were used to determine film thickness, bandgap and the optical constants of PyO. The authors would like to thank Research Corporation for financial support.

  8. Symmetry of surface nanopatterns induced by ion-beam sputtering: Role of anisotropic surface diffusion

    NASA Astrophysics Data System (ADS)

    Renedo, Javier; Cuerno, Rodolfo; Castro, Mario; Muñoz-García, Javier

    2016-04-01

    Ion-beam sputtering (IBS) is a cost-effective technique able to produce ordered nanopatterns on the surfaces of different materials. To date, most theoretical studies of this process have focused on systems which become amorphous under irradiation, e.g., semiconductors at room temperature. Thus, in spite of the large amount of experimental work on metals, or more recently on semiconductors at high temperatures, such experimental contexts have received relatively little theoretical attention. These systems are characterized by transport mechanisms, e.g., surface diffusion, which are anisotropic as a reflection of the crystalline structure not being overruled by the irradiation. Here, we generalize a previous continuum theory of IBS at normal incidence, in order to account for anisotropic surface diffusion. We explore systematically our generalized model in order to understand the role of anisotropy in the space-ordering properties of the resulting patterns. In particular, we derive a height equation which predicts morphological transitions among hexagonal and rectangular patterns as a function of system parameters and employ an angular correlation function to assess these pattern symmetries. By suitably choosing experimental conditions, it is found that one might be able to experimentally control the type of order displayed by the patterns produced.

  9. Electrical trimming of ion-beam-sputtered polysilicon resistors by high current pulses

    NASA Astrophysics Data System (ADS)

    Das, Soumen; Lahiri, Samir K.

    1994-08-01

    Phosphorus doped polysilicon resistors have been fabricated from microcrystalline silicon films which were deposited by ion beam sputtering using an argon ion beam of diameter 3 cm, energy 1 keV and current density 7mA/cm(sup 2), with a deposition rate of 100-120 angstrom/min. The resistors, having a sheet resistance of 70 Omega /square and a carrier concentration of 7.5 x 10(sup 19)cm(sup - 3), were stressed with current pulses of width 10 mu s and duty cycle 0.6% for 5 min. There was a steady decrease of resistance with increasing pulse current density above a threshold value 5 x 10(sup 5)A/cm(sup 2). A maximum fall of 27% was observed for a 95 micron long resistor. The current-voltage characteristics were also recorded during the trimming process. The trimming characteristics were simulated using a small-signal resistivity model of Lu et al. (11) and the I-V characteristics by a large-bias conduction model (12) . A close fitting of the experimental data with the theoretical values needed an adjustment of some grain boundary parameters for the different pulse current densities used for stressing. The nature of variation of the grain boundary parameters indicates that the rapid Joule heating of the grain boundaries due to current pulses passivates the grain boundary interfaces, at lower currents above the threshold, and then, at higher values of currents, causes zone melting and gradual recrystallization of the disordered boundary layers and subsequent dopant segregation. It confirms the mechanism suggested in the physical model of Kato et al. (7) . The role played by the field-enhanced diffusivity and electromigration of dopant ions, due to the high instantaneous temperature of the grain boundaries, has also been discussed. The pulse trimming technique is simple and does not cause damage to the adjacent components on a monolithic chip.

  10. The atomic structure and chemical composition of HfOx (x < 2) films prepared by ion-beam sputtering deposition

    NASA Astrophysics Data System (ADS)

    Aliev, V. S.; Gerasimova, A. K.; Kruchinin, V. N.; Gritsenko, V. A.; Prosvirin, I. P.; Badmaeva, I. A.

    2016-08-01

    Non-stoichiometric HfOx films of different chemical composition (x < 2) were fabricated by ion-beam sputtering deposition (IBSD) at room temperature. The ratio of O and Hf atoms in films x was varied by setting the O2 partial pressure in a chamber. An effect of chemical composition on the atomic structure of the films was studied by reflection high-energy electron diffraction, x-ray photoelectron spectroscopy and field emission scanning electron microscopy methods. The films were found to be amorphous, consisting only of three components: Hf-metal clusters, Hf4O7 suboxide and stoichiometric HfO2. The relative concentration of these components varies with changing x. The surface of the films contains the increased oxygen content compared to the bulk. It was found that the Hf4O7 suboxide concentration is maximal at x = 1.8. The concept of hafnium oxide film growth by the IBSD method is proposed to explain the lack of suboxides variety in the films and the instability of HfO2, when annealed at high temperature.

  11. Method for sputtering with low frequency alternating current

    DOEpatents

    Timberlake, J.R.

    1996-04-30

    Low frequency alternating current sputtering is provided by connecting a low frequency alternating current source to a high voltage transformer having outer taps and a center tap for stepping up the voltage of the alternating current. The center tap of the transformer is connected to a vacuum vessel containing argon or helium gas. Target electrodes, in close proximity to each other, and containing material with which the substrates will be coated, are connected to the outer taps of the transformer. With an applied potential, the gas will ionize and sputtering from the target electrodes onto the substrate will then result. The target electrodes can be copper or boron, and the substrate can be stainless steel, aluminum, or titanium. Copper coatings produced are used in place of nickel and/or copper striking. 6 figs.

  12. Method for sputtering with low frequency alternating current

    DOEpatents

    Timberlake, John R.

    1996-01-01

    Low frequency alternating current sputtering is provided by connecting a low frequency alternating current source to a high voltage transformer having outer taps and a center tap for stepping up the voltage of the alternating current. The center tap of the transformer is connected to a vacuum vessel containing argon or helium gas. Target electrodes, in close proximity to each other, and containing material with which the substrates will be coated, are connected to the outer taps of the transformer. With an applied potential, the gas will ionize and sputtering from the target electrodes onto the substrate will then result. The target electrodes can be copper or boron, and the substrate can be stainless steel, aluminum, or titanium. Copper coatings produced are used in place of nickel and/or copper striking.

  13. Laser damage resistance of hafnia thin films deposited by electron beam deposition, reactive low voltage ion plating, and dual ion beam sputtering

    SciTech Connect

    Gallais, Laurent; Capoulade, Jeremie; Natoli, Jean-Yves; Commandre, Mireille; Cathelinaud, Michel; Koc, Cian; Lequime, Michel

    2008-05-01

    A comparative study is made of the laser damage resistance of hafnia coatings deposited on fused silica substrates with different technologies: electron beam deposition (from Hf or HfO2 starting material), reactive low voltage ion plating, and dual ion beam sputtering.The laser damage thresholds of these coatings are determined at 1064 and 355 nm using a nanosecond pulsed YAG laser and a one-on-one test procedure. The results are associated with a complete characterization of the samples: refractive index n measured by spectrophotometry, extinction coefficient k measured by photothermal deflection, and roughness measured by atomic force microscopy.

  14. The mechanism of controlling liquid crystal surface pretilt angle on plasma beam sputtered films

    NASA Astrophysics Data System (ADS)

    Pan, Ru-Pin; Huang, Meng-Chiou; Wu, Wei-Ta; Lai, Cheng-Wei; Wu, Hsin-Ying

    2012-02-01

    In liquid crystal (LC) devices, the surface alignment is essential. The polyimide (PI) film is commonly used to make LC molecules parallel to the surface. A rubbing process is usually applied to choose a particular direction on the surface. A pretilt angle is also induced, which is useful but usually very small. In previous works, we have found out that the sputtered ion-oxide films can give a homeotropic alignment to LC, i,e, the LC molecules are perpendicular to the surface. In this work, we combine these two effects by sputtering the ion-oxide particles onto the PI coated glasses. By adjusting the sputtering conditions, the LC alignment are controlled. A wide range of pretilt angles have been achieved, while the rubbing process is no longer required. A thorough study by varying the sputtering conditions, such as voltage, current, and time duration, and observing the pretilt angles is carried out. The sputtered surfaces are examined with scanning electron microscope to see the coverage. By considering the charge distribution and electric field within the sputter, a quantitative model is then developed, which explains how the sputtering conditions affect the pretilt angles almost perfectly.

  15. Ion beam and plasma methods of producing diamondlike carbon films

    NASA Technical Reports Server (NTRS)

    Swec, Diane M.; Mirtich, Michael J.; Banks, Bruce A.

    1988-01-01

    A variety of plasma and ion beam techniques was employed to generate diamondlike carbon films. These methods included the use of RF sputtering, dc glow discharge, vacuum arc, plasma gun, ion beam sputtering, and both single and dual ion beam deposition. Since films were generated using a wide variety of techniques, the physico-chemical properties of these films varied considerably. In general, these films had characteristics that were desirable in a number of applications. For example, the films generated using both single and dual ion beam systems were evaluated for applications including power electronics as insulated gates and protective coatings on transmitting windows. These films were impervious to reagents which dissolve graphitic and polymeric carbon structures. Nuclear reaction and combustion analysis indicated hydrogen to carbon ratios to be 1.00, which allowed the films to have good transmittance not only in the infrared, but also in the visible. Other evaluated properties of these films include band gap, resistivity, adherence, density, microhardness, and intrinsic stress. The results of these studies and those of the other techniques for depositing diamondlike carbon films are presented.

  16. Liquid crystal surface alignments by using ion beam sputtered magnetic thin films

    SciTech Connect

    Wu, H.-Y.; Pan, R.-P.

    2007-08-13

    A method for liquid crystal surface alignment by using a one-step, ion beam bombardment of the glass substrates is demonstrated. Precoating by polyimide is not necessary. The authors show that the homeotropic alignment is achieved due to orientation of the diamagnetic nematogenic molecules by the magnetic field from the {gamma}-Fe{sub 2}O{sub 3} ferrimagnetic thin films created on the substrates by ion beam bombardment. The film exhibits a high Curie temperature well above 300 K and a compensation temperature which is the typical feature of ferrimagnetism. This is a simple, noncontact, and reliable alignment method for liquid crystal devices.

  17. Molecular depth profiling of organic photovoltaic heterojunction layers by ToF-SIMS: comparative evaluation of three sputtering beams.

    PubMed

    Mouhib, T; Poleunis, C; Wehbe, N; Michels, J J; Galagan, Y; Houssiau, L; Bertrand, P; Delcorte, A

    2013-11-21

    With the recent developments in secondary ion mass spectrometry (SIMS), it is now possible to obtain molecular depth profiles and 3D molecular images of organic thin films, i.e. SIMS depth profiles where the molecular information of the mass spectrum is retained through the sputtering of the sample. Several approaches have been proposed for "damageless" profiling, including the sputtering with SF5(+) and C60(+) clusters, low energy Cs(+) ions and, more recently, large noble gas clusters (Ar500-5000(+)). In this article, we evaluate the merits of these different approaches for the in depth analysis of organic photovoltaic heterojunctions involving poly(3-hexylthiophene) (P3HT) as the electron donor and [6,6]-phenyl C61 butyric acid methyl ester (PCBM) as the acceptor. It is demonstrated that the use of 30 keV C60(3+) and 500 eV Cs(+) (500 eV per atom) leads to strong artifacts for layers in which the fullerene derivative PCBM is involved, related to crosslinking and topography development. In comparison, the profiles obtained using 10 keV Ar1700(+) (∼6 eV per atom) do not indicate any sign of artifacts and reveal fine compositional details in the blends. However, increasing the energy of the Ar cluster beam beyond that value leads to irreversible damage and failure of the molecular depth profiling. The profile qualities, apparent interface widths and sputtering yields are analyzed in detail. On the grounds of these experiments and recent molecular dynamics simulations, the discussion addresses the issues of damage and crater formation induced by the sputtering and the analysis ions in such radiation-sensitive materials, and their effects on the profile quality and the depth resolution. Solutions are proposed to optimize the depth resolution using either large Ar clusters or low energy cesium projectiles for sputtering and/or analysis.

  18. Investigation of ion-beam machining methods for replicated x-ray optics

    NASA Technical Reports Server (NTRS)

    Drueding, Thomas W.

    1996-01-01

    The final figuring step in the fabrication of an optical component involves imparting a specified contour onto the surface. This can be expensive and time consuming step. The recent development of ion beam figuring provides a method for performing the figuring process with advantages over standard mechanical methods. Ion figuring has proven effective in figuring large optical components. The process of ion beam figuring removes material by transferring kinetic energy from impinging neutral particles. The process utilizes a Kaufman type ion source, where a plasma is generated in a discharge chamber by controlled electric potentials. Charged grids extract and accelerate ions from the chamber. The accelerated ions form a directional beam. A neutralizer outside the accelerator grids supplies electrons to the positive ion beam. It is necessary to neutralize the beam to prevent charging workpieces and to avoid bending the beam with extraneous electro-magnetic fields. When the directed beam strikes the workpiece, material sputters in a predicable manner. The amount and distribution of material sputtered is a function of the energy of the beam, material of the component, distance from the workpiece, and angle of incidence of the beam. The figuring method described here assumes a constant beam removal, so that the process can be represented by a convolution operation. A fixed beam energy maintains a constant sputtering rate. This temporally and spatially stable beam is held perpendicular to the workpiece at a fixed distance. For non-constant removal, corrections would be required to model the process as a convolution operation. Specific figures (contours) are achieved by rastering the beam over the workpiece at varying velocities. A unique deconvolution is performed, using series-derivative solution developed for the system, to determine these velocities.

  19. Laser beam alignment apparatus and method

    DOEpatents

    Gruhn, Charles R.; Hammond, Robert B.

    1981-01-01

    The disclosure relates to an apparatus and method for laser beam alignment. Thermoelectric properties of a disc in a laser beam path are used to provide an indication of beam alignment and/or automatic laser alignment.

  20. Laser beam alignment apparatus and method

    DOEpatents

    Gruhn, C.R.; Hammond, R.B.

    The disclosure related to an apparatus and method for laser beam alignment. Thermoelectric properties of a disc in a laser beam path are used to provide an indication of beam alignment and/or automatic laser alignment.

  1. Sputtering erosion in ion and plasma thrusters

    NASA Technical Reports Server (NTRS)

    Ray, Pradosh K.

    1995-01-01

    An experimental set-up to measure low-energy (below 1 keV) sputtering of materials is described. The materials to be bombarded represent ion thruster components as well as insulators used in the stationary plasma thruster. The sputtering takes place in a 9 inch diameter spherical vacuum chamber. Ions of argon, krypton and xenon are used to bombard the target materials. The sputtered neutral atoms are detected by a secondary neutral mass spectrometer (SNMS). Samples of copper, nickel, aluminum, silver and molybdenum are being sputtered initially to calibrate the spectrometer. The base pressure of the chamber is approximately 2 x 10(exp -9) Torr. the primary ion beam is generated by an ion gun which is capable of delivering ion currents in the range of 20 to 500 nA. The ion beam can be focused to a size approximately 1 mm in diameter. The mass spectrometer is positioned 10 mm from the target and at 90 deg angle to the primary ion beam direction. The ion beam impinges on the target at 45 deg. For sputtering of insulators, charge neutralization is performed by flooding the sample with electrons generated from an electron gun. Preliminary sputtering results, methods of calculating the instrument response function of the spectrometer and the relative sensitivity factors of the sputtered elements will be discussed.

  2. Method and apparatus for sputtering with a plasma lens

    DOEpatents

    Anders, Andre

    2016-09-27

    A plasma lens for enhancing the quality and rate of sputter deposition onto a substrate is described herein. The plasma lens serves to focus positively charged ions onto the substrate while deflecting negatively charged ions, while at the same time due to the line of sight positioning of the lens, allowing for free passage of neutrals from the target to the substrate. The lens itself is formed of a wound coil of multiple turns, inside of which are deposed spaced lens electrodes which are electrically paired to impress an E field overtop the B field generated by the coil, the potential applied to the electrodes increasing from end to end towards the center of the lens, where the applied voltage is set to a high potential at the center electrodes as to produce a potential minimum on the axis of the lens.

  3. Oxygen vacancy mediated enhanced photo-absorption from ZnO(0001) nanostructures fabricated by atom beam sputtering

    NASA Astrophysics Data System (ADS)

    Solanki, Vanaraj; Joshi, Shalik R.; Mishra, Indrani; Kabiraj, D.; Mishra, N. C.; Avasthi, D. K.; Varma, Shikha

    2016-08-01

    The nanoscale patterns created on the ZnO(0001) surfaces during atom beam irradiation have been investigated here for their photo absorption response. Preferential sputtering, during irradiation, promotes Zn-rich zones that serve as the nucleation centers for the spontaneous creation of nanostructures. Nanostructured surfaces with bigger (78 nm) nanodots, displaying hexagonal ordering and long ranged periodic behavior, show higher photo absorption and a ˜0.09 eV reduced bandgap. These nanostructures also demonstrate higher concentration of oxygen vacancies which are crucial for these results. The enhanced photo-response, as observed here, has been achieved in the absence of any dopant elements.

  4. Reticle blanks for extreme ultraviolet lithography: Ion beam sputter deposition of low defect density Mo/Si multilayers

    SciTech Connect

    Vernon, S.P.; Kania, D.R.; Kearney, P.A.; Levesque, R.A.; Hayes, A.V.; Druz, B.; Osten, E.; Rajan, R.; Hedge, H.

    1996-06-24

    We report on growth of low defect density Mo/Si multilayer (ML) coatings. The coatings were grown in a deposition system designed for EUVL reticle blank fabrication. Complete, 81 layer, high reflectance Mo/Si ML coatings were deposited on 150 mm dia (100) oriented Si wafer substrates using ion beam sputter deposition. Added defects, measured by optical scattering, correspond to defect densities of 2x10{sup -2}/cm{sup 2}. This represents a reduction in defect density of Mo/Si ML coatings by a factor of 10{sup 5}.

  5. Thin copper oxide films prepared by ion beam sputtering with subsequent thermal oxidation: Application in chemiresistors

    NASA Astrophysics Data System (ADS)

    Horak, P.; Bejsovec, V.; Vacik, J.; Lavrentiev, V.; Vrnata, M.; Kormunda, M.; Danis, S.

    2016-12-01

    Copper oxide films were prepared by thermal oxidation of thin Cu films deposited on substrates by ion beam sputtering. The subsequent oxidation was achieved in the temperature range of 200 °C-600 °C with time of treatment from 1 to 7 h (with a 1-h step) in a furnace open to air. At temperatures 250 °C-600 °C, the dominant phase formed was CuO, while at 200 °C mainly the Cu2O phase was identified. However, the oxidation at 200 °C led to a more complicated composition - in the depth Cu2O phase was observed, though in the near-surface layer the CuO dominant phase was found with a significant presence of Cu(OH)2. A limited amount of Cu2O was also found in samples annealed at 600 °C. The sheet resistance RS of the as-deposited Cu sample was 2.22 Ω/□, after gradual annealing RS was measured in the range 2.64 MΩ/□-2.45 GΩ/□. The highest RS values were obtained after annealing at 300 °C and 350 °C, respectively. Oxygen depth distribution was studied using the 16O(α,α) nuclear reaction with the resonance at energy 3032 keV. It was confirmed that the higher oxidation degree of copper is located in the near-surface region. Preliminary tests of the copper oxide films as an active layer of a chemiresistor were also performed. Hydrogen and methanol vapours, with a concentration of 1000 ppm, were detected by the sensor at an operating temperature of 300 °C and 350 °C, respectively. The response of the sensors, pointed at the p-type conductivity, was improved by the addition of thin Pd or Au catalytic films to the oxidic film surface. Pd-covered films showed an increased response to hydrogen at 300 °C, while Au-covered films were more sensitive to methanol vapours at 350 °C.

  6. Low-Energy Sputtering Research

    NASA Technical Reports Server (NTRS)

    Ray, P. K.; Shutthanandan, V.

    1999-01-01

    An experimental study is described to measure low-energy (less than 600 eV) sputtering yields of molybdenum with xenon ions using Rutherford backscattering spectroscopy (RBS) and secondary neutral mass spectroscopy (SNMS). An ion gun was used to generate the ion beam. The ion current density at the target surface was approximately 30 (micro)A/sq cm. For RBS measurements, the sputtered material was collected on a thin aluminum strip which was mounted on a semi-circular collector plate. The target was bombarded with 200 and 500 eV xenon ions at normal incidence. The differential sputtering yields were measured using the RBS method with 1 MeV helium ions. The differential yields were fitted with a cosine fitting function and integrated with respect to the solid angle to provide the total sputtering yields. The sputtering yields obtained using the RBS method are in reasonable agreement with those measured by other researchers using different techniques. For the SNMS measurements, 150 to 600 eV xenon ions were used at 50deg angle of incidence. The SNMS spectra were converted to sputtering yields for perpendicular incidence by normalizing SNMS spectral data at 500 eV with the yield measured by Rutherford backscattering spectrometry. Sputtering yields as well as the shape of the yield-energy curve obtained in this manner are in reasonable agreement with those measured by other researchers using different techniques. Sputtering yields calculated by using two semi-spherical formulations agree reasonably well with measured data. The isotopic composition of secondary ions were measured by bombarding copper with xenon ions at energies ranging from 100 eV to 1.5 keV. The secondary ion flux was found to be enriched in heavy isotopes at low incident ion energies. The heavy isotope enrichment was observed to decrease with increasing impact energy. Beyond 700 eV, light isotopes were sputtered preferentially with the enrichment remaining nearly constant.

  7. Large area superconducting YBa 2Cu 3O 7-x films grown by single target ion beam sputtering

    NASA Astrophysics Data System (ADS)

    Gauzzi, Andrea; Lucía, Maria L.; Kellett, Bruce J.; James, Jonathan H.; Pavuna, Davor

    1991-10-01

    We have demonstrated, by using a simple single YBa 2Cu 3O 7- x target ion beam system that, with a sufficiently low power ion beam, preferential sputtering is avoided and high-quality YBa 2Cu 3O 7- x films are deposited over areas larger than ≈ 30 cm 2 in a reproducible way. As-deposited films on <100>SrTiO 3 are 50-100 nmthick, c-oriented and show the following reproducible electrical properties (within the given variations): Tc0 =90±0.5 K, transitions widths less than 1 K, j inc(77 K)=1.0-1.2× 10 6 A cm -2, ϱ(300 K)=300±50μΩ cm, ϱ(300 K)/ ϱ(100 K)=2.9±0.1. The extrapolated residual resistivity ϱ res(O K) is between 0 and 5% of ϱ(300 K).

  8. Sputtered pin amorphous silicon semi-conductor device and method therefor

    DOEpatents

    Moustakas, Theodore D.; Friedman, Robert A.

    1983-11-22

    A high efficiency amorphous silicon PIN semi-conductor device is constructed by the sequential sputtering of N, I and P layers of amorphous silicon and at least one semi-transparent ohmic electrode. A method of construction produces a PIN device, exhibiting enhanced physical integrity and facilitates ease of construction in a singular vacuum system and vacuum pump down procedure.

  9. Fabrication of nanogradient coatings for laser devices using the method of magnetron sputtering

    SciTech Connect

    Abramov, N F; Volpyan, O D; Obod, Yu A; Dronskii, R V

    2013-09-30

    Significant advantages of the magnetron sputtering method for producing complex high-quality optical coatings for laser devices are shown. Technology aspects of efficient fabrication of such coatings are considered. The capabilities of the developed automated technological and control equipment are described. (nanogradient dielectric coatings and metamaterials)

  10. Opto-structural studies of well-dispersed silicon nano-crystals grown by atom beam sputtering

    PubMed Central

    2012-01-01

    Synthesis and characterization of nano-crystalline silicon grown by atom beam sputtering technique are reported. Rapid thermal annealing of the deposited films is carried out in Ar + 5% H2 atmosphere for 5 min at different temperatures for precipitation of silicon nano-crystals. The samples are characterized for their optical and structural properties using various techniques. Structural studies are carried out by micro-Raman spectroscopy, Fourier transform infrared spectroscopy, transmission electron microscopy (TEM), high resolution transmission electron microscopy, and selected area electron diffraction. The optical properties are studied by photoluminescence and UV-vis absorption spectroscopy, and bandgaps are evaluated. The bandgaps are found to decrease after rapid thermal treatment. The micro-Raman studies show the formation of nano-crystalline silicon in as-deposited as well as annealed films. The shifting and broadening in Raman peak suggest formation of nano-phase in the samples. Results of micro-Raman, photoluminescence, and TEM studies suggest the presence of a bimodal crystallite size distribution for the films annealed at higher temperatures. The results show that atom beam sputtering is a suitable technique to synthesize nearly mono-dispersed silicon nano-crystals. The size of the nano-crystals may be controlled by varying annealing parameters. PMID:23031449

  11. Tunneling behavior in ion-assist ion-beam sputtered CoFe/MgO/NiFe magnetic tunnel junctions

    SciTech Connect

    Singh, Braj Bhusan; Chaudhary, Sujeet; Pandya, Dinesh K.

    2012-11-15

    Graphical abstract: Display Omitted Highlights: ► Dual ion beam sputtered MgO barrier for MTJs. ► ∼12% TMR at 60 K. ► Glazman and Matveev model fitted for quantification of elastic and inelastic tunneling conductance through barrier. -- Abstract: Magnetic tunnel junctions (MTJs) consisting of CoFe and NiFe as ferromagnetic electrodes and MgO as insulating barrier fabricated through in situ shadow masking employing ion beam sputtering are studied for their tunneling magnetoresistance (TMR) and temperature dependence of the tunneling conductance behavior. The tunneling characteristics of these MTJs exhibited barrier height of 0.7 eV and width of 3.3 nm. These MTJs possessed ∼12% TMR at 60 K. The temperature dependence of conductance behavior of these junctions have revealed finite contributions from inelastic tunneling through the barrier via hopping conduction via present localized states which arise due to the presence of ionic interstitial defects in the MgO oxide barrier. The fitting of the data reveals that thirteenth order of hopping conduction is operative through MgO barrier.

  12. Opto-structural studies of well-dispersed silicon nano-crystals grown by atom beam sputtering.

    PubMed

    Saxena, Nupur; Kumar, Pragati; Kabiraj, Debulal; Kanjilal, Dinakar

    2012-10-03

    Synthesis and characterization of nano-crystalline silicon grown by atom beam sputtering technique are reported. Rapid thermal annealing of the deposited films is carried out in Ar + 5% H2 atmosphere for 5 min at different temperatures for precipitation of silicon nano-crystals. The samples are characterized for their optical and structural properties using various techniques. Structural studies are carried out by micro-Raman spectroscopy, Fourier transform infrared spectroscopy, transmission electron microscopy (TEM), high resolution transmission electron microscopy, and selected area electron diffraction. The optical properties are studied by photoluminescence and UV-vis absorption spectroscopy, and bandgaps are evaluated. The bandgaps are found to decrease after rapid thermal treatment. The micro-Raman studies show the formation of nano-crystalline silicon in as-deposited as well as annealed films. The shifting and broadening in Raman peak suggest formation of nano-phase in the samples. Results of micro-Raman, photoluminescence, and TEM studies suggest the presence of a bimodal crystallite size distribution for the films annealed at higher temperatures. The results show that atom beam sputtering is a suitable technique to synthesize nearly mono-dispersed silicon nano-crystals. The size of the nano-crystals may be controlled by varying annealing parameters.

  13. Beam shuttering interferometer and method

    DOEpatents

    Deason, Vance A.; Lassahn, Gordon D.

    1993-01-01

    A method and apparatus resulting in the simplification of phase shifting interferometry by eliminating the requirement to know the phase shift between interferograms or to keep the phase shift between interferograms constant. The present invention provides a simple, inexpensive means to shutter each independent beam of the interferometer in order to facilitate the data acquisition requirements for optical interferometry and phase shifting interferometry. By eliminating the requirement to know the phase shift between interferograms or to keep the phase shift constant, a simple, economical means and apparatus for performing the technique of phase shifting interferometry is provide which, by thermally expanding a fiber optical cable changes the optical path distance of one incident beam relative to another.

  14. Beam shuttering interferometer and method

    DOEpatents

    Deason, V.A.; Lassahn, G.D.

    1993-07-27

    A method and apparatus resulting in the simplification of phase shifting interferometry by eliminating the requirement to know the phase shift between interferograms or to keep the phase shift between interferograms constant. The present invention provides a simple, inexpensive means to shutter each independent beam of the interferometer in order to facilitate the data acquisition requirements for optical interferometry and phase shifting interferometry. By eliminating the requirement to know the phase shift between interferograms or to keep the phase shift constant, a simple, economical means and apparatus for performing the technique of phase shifting interferometry is provide which, by thermally expanding a fiber optical cable changes the optical path distance of one incident beam relative to another.

  15. Broad, intense, quiescent beam of singly charged metal ions obtained by extraction from self-sputtering plasma far above the runaway threshold

    SciTech Connect

    Anders, Andre; Oks, Efim

    2009-05-19

    Dense metal plasmas obtained by self-sputtering far above the runway threshold are well suited to generate intense quiescent ion beams. The dilemma of high current density and charge state purity can be solved when using target materials of low surface binding energy by utilizing non-resonant exchange reactions before ion extraction. Space-charge-limited quiescent beams of Cu+, Zn+, and Bi+ with ~;;10 mA/cm2 have been obtained through multi-aperture gridded ion extraction up to 45 kV from self-sputtering plasmas.

  16. Method for splitting low power laser beams

    SciTech Connect

    Pierscionek, B.K. )

    1990-04-01

    A new method for producing parallel rays from a laser beam using a cylindrical lens and pinholes is presented. This method can produce a greater number of emergent rays than using a {ital beam} {ital splitter}.

  17. Physical Sputtering vs. Gas Assisted Etching of Silicon Dioxide with a Gallium Focused Ion Beam: Elucidating Experiments via Monte Carlo Simulations

    NASA Astrophysics Data System (ADS)

    Timilsina, Rajendra; Tan, Shida; Livengood, Richard; Rack, Philip

    2015-03-01

    In order to increase ion beam nanomachining precision and improve imaging resolution, fine tuning of the ion beam profile is absolutely necessary. To understand the effects of ion beam tails, experiments and Monte Carlo simulations were conducted with a 40 keV gallium beam with and without gas assisted chemical etching. A gallium ion beam was scanned in an area of 25x25 nm2 on a silicon dioxide film with and without a localized XeF2 gas at 1pA current. Four different ion doses (0.23, 0.9, 1.8 and 3.6 nC/ μm2) were experimentally considered to study the sputtered and etched via profiles. Monte Carlo simulations using EnvizION program was performed to elucidate the sputtered and gas-assisted etch process. New features including gas-assisted etching by secondary electrons and a binary collision model to dissociate the precursor molecules were introduced. Sputtered via and gas assisted etching (XeF2 precursor gas) via profiles with various gas-assist pressures were studied to understand the experimental temporal behavior. Various contributions including sputtering from primary, forward scattered, backscattered ions as well as etching by recoiled atoms and secondary electrons will be discussed.

  18. Self-organised silicide nanodot patterning by medium-energy ion beam sputtering of Si(100): local correlation between the morphology and metal content

    NASA Astrophysics Data System (ADS)

    Redondo-Cubero, A.; Galiana, B.; Lorenz, K.; Palomares, FJ; Bahena, D.; Ballesteros, C.; Hernandez-Calderón, I.; Vázquez, L.

    2016-11-01

    We have produced self-organised silicide nanodot patterns by medium-energy ion beam sputtering (IBS) of silicon targets with a simultaneous and isotropic molybdenum supply. Atomic force microscopy (AFM) studies show that these patterns are qualitatively similar to those produced thus far at low ion energies. We have determined the relevance of the ion species on the pattern ordering and properties. For the higher ordered patterns produced by Xe+ ions, the pattern wavelength depends linearly on the ion energy. The dot nanostructures are silicide-rich as assessed by x-ray photoelectron spectroscopy (XPS) and emerge in height due to their lower sputtering yield, as observed by electron microscopy. Remarkably, a long wavelength corrugation is observed on the surface which is correlated with both the Mo content and the dot pattern properties. Thus, as assessed by electron microscopy, the protrusions are Mo-rich with higher and more spaced dots on their surface whereas the valleys are Mo-poor with smaller dots that are closer to each other. These findings indicate that there is a correlation between the local metal content of the surface and the nanodot pattern properties both at the nanodot and the large corrugation scales. These results contribute to advancing the understanding of this interesting nanofabrication method and aid in developing a comprehensive theory of nanodot pattern formation and evolution.

  19. Self-organised silicide nanodot patterning by medium-energy ion beam sputtering of Si(100): local correlation between the morphology and metal content.

    PubMed

    Redondo-Cubero, A; Galiana, B; Lorenz, K; Palomares, F J; Bahena, D; Ballesteros, C; Hernandez-Calderón, I; Vázquez, L

    2016-11-01

    We have produced self-organised silicide nanodot patterns by medium-energy ion beam sputtering (IBS) of silicon targets with a simultaneous and isotropic molybdenum supply. Atomic force microscopy (AFM) studies show that these patterns are qualitatively similar to those produced thus far at low ion energies. We have determined the relevance of the ion species on the pattern ordering and properties. For the higher ordered patterns produced by Xe(+) ions, the pattern wavelength depends linearly on the ion energy. The dot nanostructures are silicide-rich as assessed by x-ray photoelectron spectroscopy (XPS) and emerge in height due to their lower sputtering yield, as observed by electron microscopy. Remarkably, a long wavelength corrugation is observed on the surface which is correlated with both the Mo content and the dot pattern properties. Thus, as assessed by electron microscopy, the protrusions are Mo-rich with higher and more spaced dots on their surface whereas the valleys are Mo-poor with smaller dots that are closer to each other. These findings indicate that there is a correlation between the local metal content of the surface and the nanodot pattern properties both at the nanodot and the large corrugation scales. These results contribute to advancing the understanding of this interesting nanofabrication method and aid in developing a comprehensive theory of nanodot pattern formation and evolution.

  20. Self-organised silicide nanodot patterning by medium-energy ion beam sputtering of Si(100): local correlation between the morphology and metal content.

    PubMed

    Redondo-Cubero, A; Galiana, B; Lorenz, K; Palomares, F J; Bahena, D; Ballesteros, C; Hernandez-Calderón, I; Vázquez, L

    2016-11-01

    We have produced self-organised silicide nanodot patterns by medium-energy ion beam sputtering (IBS) of silicon targets with a simultaneous and isotropic molybdenum supply. Atomic force microscopy (AFM) studies show that these patterns are qualitatively similar to those produced thus far at low ion energies. We have determined the relevance of the ion species on the pattern ordering and properties. For the higher ordered patterns produced by Xe(+) ions, the pattern wavelength depends linearly on the ion energy. The dot nanostructures are silicide-rich as assessed by x-ray photoelectron spectroscopy (XPS) and emerge in height due to their lower sputtering yield, as observed by electron microscopy. Remarkably, a long wavelength corrugation is observed on the surface which is correlated with both the Mo content and the dot pattern properties. Thus, as assessed by electron microscopy, the protrusions are Mo-rich with higher and more spaced dots on their surface whereas the valleys are Mo-poor with smaller dots that are closer to each other. These findings indicate that there is a correlation between the local metal content of the surface and the nanodot pattern properties both at the nanodot and the large corrugation scales. These results contribute to advancing the understanding of this interesting nanofabrication method and aid in developing a comprehensive theory of nanodot pattern formation and evolution. PMID:27670245

  1. Electron beam induced coloration and luminescence in layered structure of WO{sub 3} thin films grown by pulsed dc magnetron sputtering

    SciTech Connect

    Karuppasamy, A.; Subrahmanyam, A.

    2007-06-01

    Tungsten oxide thin films have been deposited by pulsed dc magnetron sputtering of tungsten in argon and oxygen atmosphere. The as-deposited WO{sub 3} film is amorphous, highly transparent, and shows a layered structure along the edges. In addition, the optical properties of the as-deposited film show a steplike behavior of extinction coefficient. However, the electron beam irradiation (3.0 keV) of the as-deposited films results in crystallization, coloration (deep blue), and luminescence (intense red emission). The above changes in physical properties are attributed to the extraction of oxygen atoms from the sample and the structural modifications induced by electron bombardment. The present method of coloration and luminescence has a potential for fabricating high-density optical data storage device.

  2. Ion beam induced surface patterns due to mass redistribution and curvature-dependent sputtering

    NASA Astrophysics Data System (ADS)

    Bobes, Omar; Zhang, Kun; Hofsäss, Hans

    2012-12-01

    Recently it was reported that ion-induced mass redistribution would solely determine nano pattern formation on ion-irradiated surfaces. We investigate the pattern formation on amorphous carbon thin films irradiated with Xe ions of energies between 200 eV and 10 keV. Sputter yield as well as number of displacements within the collision cascade vary strongly as function of ion energy and allow us to investigate the contributions of curvature-dependent erosion according to the Bradley-Harper model as well as mass redistribution according to the Carter-Vishnyakov model. We find parallel ripple orientations for an ion incidence angle of 60° and for all energies. A transition to perpendicular pattern orientation or a rather flat surface occurs around 80° for energies between 1 keV and 10 keV. Our results are compared with calculations based on both models. For the calculations we extract the shape and size of Sigmund's energy ellipsoid (parameters a, σ, μ), the angle-dependent sputter yield, and the mean mass redistribution distance from the Monte Carlo simulations with program SDTrimSP. The calculated curvature coefficients Sx and Sy describing the height evolution of the surface show that mass redistribution is dominant for parallel pattern formation in the whole energy regime. Furthermore, the angle where the parallel pattern orientation starts to disappear is related to curvature-dependent sputtering. In addition, we investigate the case of Pt erosion with 200 eV Ne ions, where mass redistribution vanishes. In this case, we observe perpendicular ripple orientation in accordance with curvature-dependent sputtering and the predictions of the Bradley-Harper model.

  3. Solar Ion Sputter Deposition in the Lunar Regolith: Experimental Simulation Using Focused-Ion Beam Techniques

    NASA Technical Reports Server (NTRS)

    Christoffersen, R.; Rahman, Z.; Keller, L. P.

    2012-01-01

    As regions of the lunar regolith undergo space weathering, their component grains develop compositionally and microstructurally complex outer coatings or "rims" ranging in thickness from a few 10 s to a few 100's of nm. Rims on grains in the finest size fractions (e.g., <20 m) of mature lunar regoliths contain optically-active concentrations of nm size metallic Fe spherules, or "nanophase Fe(sup o)" that redden and attenuate optical reflectance spectral features important in lunar remote sensing. Understanding the mechanisms for rim formation is therefore a key part of connecting the drivers of mineralogical and chemical changes in the lunar regolith with how lunar terrains are observed to become space weathered from a remotely-sensed point of view. As interpreted based on analytical transmission electron microscope (TEM) studies, rims are produced from varying relative contributions from: 1) direct solar ion irradiation effects that amorphize or otherwise modify the outer surface of the original host grain, and 2) nanoscale, layer-like, deposition of extrinsic material processed from the surrounding soil. This extrinsic/deposited material is the dominant physical host for nanophase Fe(sup o) in the rims. An important lingering uncertainty is whether this deposited material condensed from regolith components locally vaporized in micrometeorite or larger impacts, or whether it formed as solar wind ions sputtered exposed soil and re-deposited the sputtered ions on less exposed areas. Deciding which of these mechanisms is dominant, or possibility exclusive, has been hampered because there is an insufficient library of chemical and microstructural "fingerprints" to distinguish deposits produced by the two processes. Experimental sputter deposition / characterization studies relevant to rim formation have particularly lagged since the early post-Apollo experiments of Hapke and others, especially with regard to application of TEM-based characterization techniques. Here

  4. Structural analysis of the outermost hair surface using TOF-SIMS with gas cluster ion beam sputtering.

    PubMed

    Lshikawa, Kazutaka; Okamoto, Masayuki; Aoyagi, Satoka

    2016-06-28

    A hair cuticle, which consists of flat overlapping scales that surround the hair fiber, protects inner tissues against external stimuli. The outermost surface of the cuticle is covered with a thin membrane containing proteins and lipids called the epicuticle. In a previous study, the authors conducted a depth profile analysis of a hair cuticle's amino acid composition to characterize its multilayer structure. Time-of-flight secondary ion mass spectrometry with a bismuth primary ion source was used in combination with the C60 sputtering technique for the analysis. It was confirmed that the lipids and cysteine-rich layer exist on the outermost cuticle surface, which is considered to be the epicuticle, though the detailed structure of the epicuticle has not been clarified. In this study, depth profile analysis of the cuticle surface was conducted using the argon gas cluster ion beam (Ar-GCIB) sputtering technique, in order to characterize the structure of the epicuticle. The shallow depth profile of the cuticle surface was investigated using an Ar-GCIB impact energy of 5 keV. Compared to the other amino acid peaks rich in the epicuticle, the decay of 18-methyleicosanic acid (18-MEA) thiolate peak was the fastest. This result suggests that the outermost surface of the hair is rich in 18-MEA. In conclusion, our results indicate that the outermost surfaces of cuticles have a multilayer (lipid and protein layers), which is consistent with the previously proposed structure.

  5. Growth stress buildup in ion beam sputtered Mo thin films and comparative study of stress relaxation upon thermal annealing or ion irradiation

    SciTech Connect

    Debelle, A.; Abadias, G.; Michel, A.; Jaouen, C.; Pelosin, V.

    2007-09-15

    In an effort to address the understanding of the origin of growth stress in thin films deposited under very energetic conditions, the authors investigated the stress state and microstructure of Mo thin films grown by ion beam sputtering (IBS) as well as the stress relaxation processes taking place during subsequent thermal annealing or ion irradiation. Different sets of samples were grown by varying the IBS deposition parameters, namely, the energy E{sub 0} and the flux j of the primary ion beam, the target-to-sputtering gas mass ratio M{sub 1}/M{sub 2} as well as film thickness. The strain-stress state was determined by x-ray diffraction using the sin{sup 2} {psi} method and data analyzed using an original stress model which enabled them to correlate information at macroscopic (in terms of stress) and microscopic (in terms of defect concentration) levels. Results indicate that these refractory metallic thin films are characterized by a high compressive growth stress (-2.6 to -3.8 GPa), resulting from the creation of a large concentration (up to {approx}1.4%) of point or cluster defects, due to the atomic peening mechanism. The M{sub 1}/M{sub 2} mass ratio enables tuning efficiently the mean deposited energy of the condensing atoms; thus, it appears to be the more relevant deposition parameter that allows modifying both the microstructure and the stress level in a significant way. The growth stress comes out to be highly unstable. It can be easily relaxed either by postgrowth thermal annealing or ion irradiation in the hundred keV range at very low dose [<0.1 dpa (displacement per atom)]. It is shown that thermal annealing induces deleterious effects such as oxidation of the film surface, decrease of the film density, and in some cases adhesion loss at the film/substrate interface, while ion irradiation allows controlling the stress level without generating any macroscopic damage.

  6. Tunneling conductance studies in the ion-beam sputtered CoFe/Mg/MgO/NiFe magnetic tunnel junctions

    SciTech Connect

    Singh, Braj Bhusan; Chaudhary, Sujeet

    2013-06-03

    Magnetic tunnel junctions consisting of CoFe(10 nm)/Mg(1 nm)/MgO(3.5 nm)/NiFe(10 nm) are grown at room temperature using dual ion beam sputtering via in-situ shadow masking. The effective barrier thickness and average barrier height are estimated to be 3.5 nm (2.9 nm) and 0.69 eV (1.09 eV) at 290 K (70 K), respectively. The tunnel magnetoresistance value of 0.2 % and 2.3 % was observed at 290 K and 60 K, respectively. The temperature dependence of tunneling conductance revealed the presence of localized states present within the forbidden gap of the MgO barrier leading to finite inelastic spin independent tunneling contributions, which degrade the TMR value.

  7. Structural and magnetic properties of ion beam sputtered Co2FeAl full Heusler alloy thin films

    NASA Astrophysics Data System (ADS)

    Husain, Sajid; Kumar, Ankit; Chaudhary, Sujeet; Svedlindh, Peter

    2016-05-01

    Co2FeAl full Heusler alloy thin films grown at different temperatures on Si(100) substrates using ion beam sputtering system have been investigated. X-ray diffraction (XRD) patterns revealed the A2 disordered phase in these films. The deduced lattice parameter slightly increases with increase in the growth temperature. The saturation magnetization it is found to increase with increase in growth temperature. The magnetic anisotropy has been studied using angle dependent magneto-optical Kerr effect. In the room temperature deposited film, the combination of cubic and uniaxial anisotropy have been observed with weak in-plane uniaxial anisotropy which increases with growth temperature. The uniaxial anisotropy is attributed to the anisotropic interfacial bonding in these Co2FeAl /Si(100) heterostructures.

  8. Ion beam sputter-deposited thin film coatings for protection of spacecraft polymers in low earth orbit

    NASA Technical Reports Server (NTRS)

    Banks, B. A.; Mirtich, M. J.; Rutledge, S. K.; Swec, D. M.; Nahra, H. K.

    1985-01-01

    Ion beam sputter-deposited thin films at Al2O3, SiO2, and a codeposited mixture of predominantly SiO2 with small amounts of fluoropolymer were evaluated both in laboratory plasma ashing tests and in space on board Shuttle flight STS-8 for effectiveness in preventing oxidation of polyimide Kapton. Measurements of mass loss and optical performance of coated and uncoated polyimide samples exposed to the low earth orbital environment are presented. Optical techniques were used to measure loss rates of protective films exposed to atomic oxygen. Results of the analysis of the space flight exposed samples indicate that thin film metal oxide coatings are very effective in protecting the polyimide. Metal oxide coatings with a small amount of fluoropolymer codeposited have the additional benefit of great flexibility.

  9. Ion beam sputter-deposited thin film coatings for protection of spacecraft polymers in low Earth orbit

    NASA Technical Reports Server (NTRS)

    Banks, B. A.; Mirtich, M. J.; Rutledge, S. K.; Swec, D. M.; Nahra, H. K.

    1985-01-01

    Ion beam sputter-deposited thin films of Al2O3, SiO2, and a codeposited mixture of predominantly SiO2 with small amounts of a fluoropolymer were evaluated both in laboratory plasma ashing tests and in space on board shuttle flight STS-8 for effectiveness in preventing oxidation of polyimide Kapton. Measurements of mass loss and optical performance of coated and uncoated polyimide samples exposed to the low Earth orbital environment are presented. Optical techniques were used to measure loss rates of protective films exposed to atomic oxygen. Results of the analysis of the space flight exposed samples indicate that thin film metal oxide coatings are very effective in protecting the polyimide. Metal oxide coatings with a small amount of fluoropolymer codeposited have the additional benefit of great flexibility.

  10. Effects of additives on the preferred orientation of Mn-Zn ferrite thin films deposited by ion beam sputtering

    NASA Astrophysics Data System (ADS)

    Cho, Hae Seok; Kim, Hyeong Joon

    1995-03-01

    We investigated the effects of additives on the preferred orientation of the Mn-Zn ferrite thin films deposited on SiO2(1000 Å)/Si(100) at 350 °C by ion beam sputtering. A mosaic target, consisting of a single crystal (100) Mn-Zn ferrite with a metal strip on it, was employed as the target. The preferred orientation of the ferrite films was (hhh) for the target with or without Fe and Zn additives, and (h00) for Ti addition. In the case of Cu addition, a weak (311) orientation appeared with a strong (hhh) preferred orientation. The origin of the changes in the preferred orientation with different additives was discussed. The easy axis of magnetization, however, lay in the direction parallel to the film plane due to large shape anisotropy, irrespective of the preferred orientation.

  11. Thickness dependence of the preferred orientation of Mn-Zn ferrite thin films deposited by ion-beam sputtering

    NASA Astrophysics Data System (ADS)

    Cho, Hae Seok; Kim, Hyeong Joon

    1995-07-01

    The thickness dependence of the preferred orientation of the Cu or Ti added Mn-Zn ferrite thin films deposited on SiO2(1000 Å)/Si(100) at 350 °C by ion-beam sputtering was investigated. A mosaic target, consisting of a single-crystal (110) Mn-Zn ferrite with a metal strip on it, was employed as the target. The (hhh) preferred orientation, formed at the initial growth stage, of the Cu added Mn-Zn ferrite film changed to the (h00) preferred orientation with increasing film thickness, while the initially formed (h00) preferred orientation of the Ti added one was enhanced with increasing film thickness. Such different behaviors were discussed in terms of the surface energy and the preferred growth orientation of the ferrite film. The thickness dependence of magnetic properties of the ferrite films was also investigated.

  12. Conformal growth of Mo/Si multilayers on grating substrates using collimated ion beam sputtering

    SciTech Connect

    Voronov, D. L.; Gawlitza, Peter; Cambie, Rossana; Dhuey, Scott; Gullikson, Eric M.; Warwick, Tony; Braun, Stefan; Yashchuk, Valeriy V.; Padmore, Howard A.

    2012-05-07

    Deposition of multilayers on saw-tooth substrates is a key step in the fabrication of multilayer blazed gratings (MBG) for extreme ultraviolet and soft x-rays. Growth of the multilayers can be perturbed by shadowing effects caused by the highly corrugated surface of the substrates, which results in distortion of the multilayer stack structure and degradation of performance of MBGs. In this study, to minimize the shadowing effects, we used an ion-beamsputtering machine with a highly collimated atomic flux to deposit Mo/Si multilayers on saw-tooth substrates. The sputtering conditions were optimized by finding a balance between smoothening and roughening processes in order to minimize degradation of the groove profile in the course of deposition and at the same time to keep the interfaces of a multilayer stack smooth enough for high efficiency. An optimal value of energy of 200 eV for sputtering Kr+ ions was found by deposition of test multilayers on flat substrates at a range of ion energies. Two saw-tooth substrates were deposited at energies of 200 eV and 700 eV for the sputtering ions. It was found that reduction of the ion energy improved the blazing performance of the MBG and resulted in a 40% gain in the diffraction efficiency due to better replication of the groove profile by the multilayer. As a result of the optimization performed, an absolute diffraction efficiency of 28.8% was achieved for the 2nd blaze order of the MBG with a groove density of 7350 lines/mm at a wavelength of 13.5 nm. Lastly, details of the growth behavior of the multilayers on flat and saw-tooth substrates are discussed in terms of the linear continuous model of film growth.

  13. Electrostatic energy analyzer measurements of low energy zirconium beam parameters in a plasma sputter-type negative ion source.

    PubMed

    Malapit, Giovanni M; Mahinay, Christian Lorenz S; Poral, Matthew D; Ramos, Henry J

    2012-02-01

    A plasma sputter-type negative ion source is utilized to produce and detect negative Zr ions with energies between 150 and 450 eV via a retarding potential-type electrostatic energy analyzer. Traditional and modified semi-cylindrical Faraday cups (FC) inside the analyzer are employed to sample negative Zr ions and measure corresponding ion currents. The traditional FC registered indistinct ion current readings which are attributed to backscattering of ions and secondary electron emissions. The modified Faraday cup with biased repeller guard ring, cut out these signal distortions leaving only ringings as issues which are theoretically compensated by fitting a sigmoidal function into the data. The mean energy and energy spread are calculated using the ion current versus retarding potential data while the beam width values are determined from the data of the transverse measurement of ion current. The most energetic negative Zr ions yield tighter energy spread at 4.11 eV compared to the least energetic negative Zr ions at 4.79 eV. The smallest calculated beam width is 1.04 cm for the negative Zr ions with the highest mean energy indicating a more focused beam in contrast to the less energetic negative Zr ions due to space charge forces.

  14. Electrostatic energy analyzer measurements of low energy zirconium beam parameters in a plasma sputter-type negative ion source

    SciTech Connect

    Malapit, Giovanni M.; Mahinay, Christian Lorenz S.; Poral, Matthew D.; Ramos, Henry J.

    2012-02-15

    A plasma sputter-type negative ion source is utilized to produce and detect negative Zr ions with energies between 150 and 450 eV via a retarding potential-type electrostatic energy analyzer. Traditional and modified semi-cylindrical Faraday cups (FC) inside the analyzer are employed to sample negative Zr ions and measure corresponding ion currents. The traditional FC registered indistinct ion current readings which are attributed to backscattering of ions and secondary electron emissions. The modified Faraday cup with biased repeller guard ring, cut out these signal distortions leaving only ringings as issues which are theoretically compensated by fitting a sigmoidal function into the data. The mean energy and energy spread are calculated using the ion current versus retarding potential data while the beam width values are determined from the data of the transverse measurement of ion current. The most energetic negative Zr ions yield tighter energy spread at 4.11 eV compared to the least energetic negative Zr ions at 4.79 eV. The smallest calculated beam width is 1.04 cm for the negative Zr ions with the highest mean energy indicating a more focused beam in contrast to the less energetic negative Zr ions due to space charge forces.

  15. Temperature dependence of the optical properties of ion-beam sputtered ZrN films

    NASA Astrophysics Data System (ADS)

    Larijani, M. M.; Kiani, M.; Jafari-Khamse, E.; Fathollahi, V.

    2014-05-01

    The reflectivity of sputtered Zirconium nitride films on glass substrate has been investigated in the spectral energy range of 0.8-6.1 eV as a function of deposition temperature varying between 373 and 723 K. Optical constants of the prepared films have been determined using the Drude analysis. Experimental results showed strong dependency of optical properties of the films, such as optical resistivity on the substrate temperature. The temperature increase of the substrate has shown an increase in both the plasmon frequency and electron scattering time. The electrical behavior of the films showed a good agreement between their optical and electrical resistivity.

  16. New Cs sputter ion source with polyatomic ion beams for secondary ion mass spectrometry applications

    NASA Astrophysics Data System (ADS)

    Belykh, S. F.; Palitsin, V. V.; Veryovkin, I. V.; Kovarsky, A. P.; Chang, R. J. H.; Adriaens, A.; Dowsett, M. G.; Adams, F.

    2007-08-01

    A simple design for a cesium sputter ion source compatible with vacuum and ion-optical systems as well as with electronics of the commercially available Cameca IMS-4f instrument is reported. This ion source has been tested with the cluster primary ions of Sin- and Cun-. Our experiments with surface characterization and depth profiling conducted to date demonstrate improvements of the analytical capabilities of the secondary ion mass spectrometry instrument due to the nonadditive enhancement of secondary ion emission and shorter ion ranges of polyatomic projectiles compared to atomic ones with the same impact energy.

  17. A new Cs sputter ion source with polyatomic ion beams for SIMS applications.

    SciTech Connect

    Belykh, S. F.; Palitsin, V. V.; Veryovkin, I. V.; Kovarsky, A. P.; Chang, R. J. H.; Adriaens, A.; Dowsett, M. G.; Adams, F.; Materials Science Division; Univ. Warwick; Ioffe Phys.-Tech. Inst.; Ghent Univ.; Univ. Antwerp

    2007-08-02

    A simple design for a cesium sputter ion source compatible with vacuum and ion-optical systems as well as with electronics of the commercially available Cameca IMS-4f instrument is reported. This ion source has been tested with the cluster primary ions of Si{sub n}{sup -} and Cu{sub n}{sup -}. Our experiments with surface characterization and depth profiling conducted to date demonstrate improvements of the analytical capabilities of the secondary ion mass spectrometry instrument due to the nonadditive enhancement of secondary ion emission and shorter ion ranges of polyatomic projectiles compared to atomic ones with the same impact energy.

  18. Electrochromic properties of niobium oxide thin films prepared by radio-frequency magnetron sputtering method

    NASA Astrophysics Data System (ADS)

    Maruyama, Toshiro; Arai, Susumu

    1993-08-01

    Electrochromic niobium oxide thin films were prepared by a radio-frequency magnetron sputtering method. Amorphous Nb2O5 thin films deposited at radio-frequency power 100 W showed the electrochromic behavior: Reduction and oxidation of the films in 0.1 M Na2CO3+0.1 M NaHCO3 buffer solution resulted in coloration and bleaching, respectively. Coulometry indicated that the coloration efficiency was 10 cm2/C.

  19. Auger electron nanoscale mapping and x-ray photoelectron spectroscopy combined with gas cluster ion beam sputtering to study an organic bulk heterojunction

    SciTech Connect

    Heon Kim, Seong; Heo, Sung; Ihn, Soo-Ghang; Yun, Sungyoung; Hwan Park, Jong; Chung, Yeonji; Lee, Eunha; Park, Gyeongsu; Yun, Dong-Jin

    2014-06-16

    The lateral and vertical distributions of organic p/n bulk heterojunctions for an organic solar cell device are, respectively, investigated using nanometer-scale Auger electron mapping and using X-ray photoelectron spectroscopy (XPS) with Ar gas cluster ion beam (GCIB) sputtering. The concentration of sulfur, present only in the p-type material, is traced to verify the distribution of p-type (donor) and n-type (acceptor) materials in the blended structure. In the vertical direction, a considerable change in atomic sulfur concentration is observed using XPS depth profiling with Ar GCIB sputtering. In addition, Auger electron mapping of sulfur reveals the lateral 2-dimensional distribution of p- and n-type materials. The combination of Auger electron mapping with Ar GCIB sputtering should thereby allow the construction of 3-dimensional distributions of p- and n-type materials in organic photovoltaic cells.

  20. Particle beam injector system and method

    DOEpatents

    Guethlein, Gary

    2013-06-18

    Methods and devices enable coupling of a charged particle beam to a radio frequency quadrupole accelerator. Coupling of the charged particle beam is accomplished, at least in-part, by relying on of sensitivity of the input phase space acceptance of the radio frequency quadrupole to the angle of the input charged particle beam. A first electric field across a beam deflector deflects the particle beam at an angle that is beyond the acceptance angle of the radio frequency quadrupole. By momentarily reversing or reducing the established electric field, a narrow portion of the charged particle beam is deflected at an angle within the acceptance angle of the radio frequency quadrupole. In another configuration, beam is directed at an angle within the acceptance angle of the radio frequency quadrupole by the first electric field and is deflected beyond the acceptance angle of the radio frequency quadrupole due to the second electric field.

  1. Focused Ion beam source method and Apparatus

    SciTech Connect

    Pellin, Michael J.; Lykke, Keith R.; Lill, Thorsten B.

    1998-08-17

    A focused ion beam having a cross section of submicron diameter, a high ion current, and a narrow energy range is generated from a target comprised of particle source material by laser ablation. The method involves directing a laser beam having a cross section of critical diameter onto the target, producing a cloud of laser ablated particles having unique characteristics, and extracting and focusing a charged particle beam from the laser ablated cloud. The method is especially suited for producing focused ion beams for semiconductor device analysis and modification.

  2. Focused ion beam source method and apparatus

    DOEpatents

    Pellin, Michael J.; Lykke, Keith R.; Lill, Thorsten B.

    2000-01-01

    A focused ion beam having a cross section of submicron diameter, a high ion current, and a narrow energy range is generated from a target comprised of particle source material by laser ablation. The method involves directing a laser beam having a cross section of critical diameter onto the target, producing a cloud of laser ablated particles having unique characteristics, and extracting and focusing a charged particle beam from the laser ablated cloud. The method is especially suited for producing focused ion beams for semiconductor device analysis and modification.

  3. High-performance 6-inch EUV mask blanks produced under real production conditions by ion-beam sputter deposition

    NASA Astrophysics Data System (ADS)

    Becker, Hans W.; Sobel, Frank; Aschke, Lutz; Renno, Markus; Krieger, Juergen; Buttgereit, Ute; Hess, Guenter; Lenzen, Frank; Knapp, Konrad; Yulin, Sergey A.; Feigl, Torsten; Kuhlmann, Thomas; Kaiser, Norbert

    2002-12-01

    EUV mask blanks consist of two thin film systems deposited on low thermal expansion 6 inch substrates (LTEM). First there is the multilayer stack with around 100 alternating layers of elements with different optical properties which are topped by a capping layer. The absorber stack which consists of a buffer and a absorber layer is next. Here a minimum absorption of EUV light of 99 % is required. The stress in both layer systems should be as low as possible. The reduction of defects to an absolute minimum is one of the main challenges. The high-reflective Mo/Si multilayer coatings were designed for normal incidence reflectivity and successfully deposited on 6-inch LTEM substrates by ion-beam sputtering. X-ray scattering, transmission electron microscopy and atomic force microscopy were used for characterization of the multilayer interfaces and the surface morphology. The results are correlated to the measured normal incidence reflectivity using synchrotron radiation at the "Physikalisch- Technischen Bundesanstalt" (PTB) refelctometer at BESSY II, Berlin, Germany. A high resolution laser scanner was used to measure the particle distribution. First multilayer defect results are presented.

  4. Direct growth of Ge quantum dots on a graphene/SiO2/Si structure using ion beam sputtering deposition.

    PubMed

    Zhang, Z; Wang, R F; Zhang, J; Li, H S; Zhang, J; Qiu, F; Yang, J; Wang, C; Yang, Y

    2016-07-29

    The growth of Ge quantum dots (QDs) using the ion beam sputtering deposition technique has been successfully conducted directly on single-layer graphene supported by SiO2/Si substrate. The results show that the morphology and size of Ge QDs on graphene can be modulated by tuning the Ge coverage. Charge transfer behavior, i.e. doping effect in graphene has been demonstrated at the interface of Ge/graphene. Compared with that of traditional Ge dots grown on Si substrate, the positions of both corresponding photoluminescence (PL) peaks of Ge QDs/graphene hybrid structure undergo a large red-shift, which can probably be attributed to the lack of atomic intermixing and the existence of surface states in this hybrid material. According to first-principles calculations, the Ge growth on the graphene should follow the so-called Volmer-Weber mode instead of the Stranski-Krastanow one which is observed generally in the traditional Ge QDs/Si system. The calculations also suggest that the interaction between Ge and graphene layer can be enhanced with the decrease of the Ge coverage. Our results may supply a prototype for fabricating novel optoelectronic devices based on a QDs/graphene hybrid nanostructure.

  5. Direct growth of Ge quantum dots on a graphene/SiO2/Si structure using ion beam sputtering deposition.

    PubMed

    Zhang, Z; Wang, R F; Zhang, J; Li, H S; Zhang, J; Qiu, F; Yang, J; Wang, C; Yang, Y

    2016-07-29

    The growth of Ge quantum dots (QDs) using the ion beam sputtering deposition technique has been successfully conducted directly on single-layer graphene supported by SiO2/Si substrate. The results show that the morphology and size of Ge QDs on graphene can be modulated by tuning the Ge coverage. Charge transfer behavior, i.e. doping effect in graphene has been demonstrated at the interface of Ge/graphene. Compared with that of traditional Ge dots grown on Si substrate, the positions of both corresponding photoluminescence (PL) peaks of Ge QDs/graphene hybrid structure undergo a large red-shift, which can probably be attributed to the lack of atomic intermixing and the existence of surface states in this hybrid material. According to first-principles calculations, the Ge growth on the graphene should follow the so-called Volmer-Weber mode instead of the Stranski-Krastanow one which is observed generally in the traditional Ge QDs/Si system. The calculations also suggest that the interaction between Ge and graphene layer can be enhanced with the decrease of the Ge coverage. Our results may supply a prototype for fabricating novel optoelectronic devices based on a QDs/graphene hybrid nanostructure. PMID:27302495

  6. Direct growth of Ge quantum dots on a graphene/SiO2/Si structure using ion beam sputtering deposition

    NASA Astrophysics Data System (ADS)

    Zhang, Z.; Wang, R. F.; Zhang, J.; Li, H. S.; Zhang, J.; Qiu, F.; Yang, J.; Wang, C.; Yang, Y.

    2016-07-01

    The growth of Ge quantum dots (QDs) using the ion beam sputtering deposition technique has been successfully conducted directly on single-layer graphene supported by SiO2/Si substrate. The results show that the morphology and size of Ge QDs on graphene can be modulated by tuning the Ge coverage. Charge transfer behavior, i.e. doping effect in graphene has been demonstrated at the interface of Ge/graphene. Compared with that of traditional Ge dots grown on Si substrate, the positions of both corresponding photoluminescence (PL) peaks of Ge QDs/graphene hybrid structure undergo a large red-shift, which can probably be attributed to the lack of atomic intermixing and the existence of surface states in this hybrid material. According to first-principles calculations, the Ge growth on the graphene should follow the so-called Volmer-Weber mode instead of the Stranski-Krastanow one which is observed generally in the traditional Ge QDs/Si system. The calculations also suggest that the interaction between Ge and graphene layer can be enhanced with the decrease of the Ge coverage. Our results may supply a prototype for fabricating novel optoelectronic devices based on a QDs/graphene hybrid nanostructure.

  7. Synthesis of in-plane and stacked graphene/hexagonal boron nitride heterostructures by combining with ion beam sputtering deposition and chemical vapor deposition.

    PubMed

    Meng, Jun Hua; Zhang, Xing Wang; Wang, Hao Lin; Ren, Xi Biao; Jin, Chuan Hong; Yin, Zhi Gang; Liu, Xin; Liu, Heng

    2015-10-14

    Graphene/hexagonal boron nitride (h-BN) heterostructures have attracted a great deal of attention in recent years due to their unique and complementary properties for use in a wide range of potential applications. However, it still remains a challenge to synthesize large-area high quality samples by a scalable growth method. In this work, we present the synthesis of both in-plane and stacked graphene/h-BN heterostructures on Cu foils by sequentially depositing h-BN via ion beam sputtering deposition (IBSD) and graphene with chemical vapor deposition (CVD). Due to a significant difference in the growth rate of graphene on h-BN and Cu, the in-plane graphene/h-BN heterostructures were rapidly formed on h-BN domain/Cu substrates. The large-area vertically stacked graphene/h-BN heterostructures were obtained by using the continuous h-BN film as a substrate. Furthermore, the well-designed sub-bilayered h-BN substrates provide direct evidence that the monolayered h-BN on Cu exhibits higher catalytic activity than the bilayered h-BN on Cu. The growth method applied here may have great potential in the scalable preparation of large-area high-quality graphene/h-BN heterostructures.

  8. The atomic structure and chemical composition of HfOx (x < 2) films prepared by ion-beam sputtering deposition

    NASA Astrophysics Data System (ADS)

    Aliev, V. S.; Gerasimova, A. K.; Kruchinin, V. N.; Gritsenko, V. A.; Prosvirin, I. P.; Badmaeva, I. A.

    2016-08-01

    Non-stoichiometric HfOx films of different chemical composition (x < 2) were fabricated by ion-beam sputtering deposition (IBSD) at room temperature. The ratio of O and Hf atoms in films x was varied by setting the O2 partial pressure in a chamber. An effect of chemical composition on the atomic structure of the films was studied by reflection high-energy electron diffraction, x-ray photoelectron spectroscopy and field emission scanning electron microscopy methods. The films were found to be amorphous, consisting only of three components: Hf-metal clusters, Hf4O7 suboxide and stoichiometric HfO2. The relative concentration of these components varies with changing x. The surface of the films contains the increased oxygen content compared to the bulk. It was found that the Hf4O7 suboxide concentration is maximal at x = 1.8. The concept of hafnium oxide film growth by the IBSD method is proposed to explain the lack of suboxides variety in the films and the instability of HfO2, when annealed at high temperature.

  9. Realization of Critical Distance during the Interplay between Re-deposition and Secondary sputtering from Milling of Angular Side Wall with a Focused Ion Beam

    SciTech Connect

    Saraf, Laxmikant V.

    2011-07-01

    In-situ observation of critical distance (CD), a distance where secondary sputtering effects diminish and re-deposition starts to dominate is realized during controlled focused ion beam (FIB) sputtering. The experiments were performed on representative high density Nialloy and lower density porous Ni-YSZ. For the Ni-alloy case, it was observed that linear extrapolation of re-deposited layer width coincides with CD suggesting uniform sputtering and re-deposition effects. Estimation related to percentage of re-deposition from FIB etched layer at an angle of 50 degrees between the lower membrane and FIB etched side wall clearly demonstrated dominant secondary etching, neutralizing sputtering/redeposition and dominant re-deposition regions. Although the angle between FIB etched angular side wall and re-deposited/etched membrane adds some complication, the suggested overall experimental approach would substantially simplify to develop more realistic models than previously considered complex situations dealing with interplay between the re-deposition and secondary etching.

  10. Simultaneous ion sputter polishing and deposition

    NASA Technical Reports Server (NTRS)

    Rutledge, S.; Banks, B.; Brdar, M.

    1981-01-01

    Results of experiments to study ion beam sputter polishing in conjunction with simultaneous deposition as a mean of polishing copper surfaces are presented. Two types of simultaneous ion sputter polishing and deposition were used in these experiments. The first type utilized sputter polishing simultaneous with vapor deposition, and the second type utilized sputter polishing simultaneous with sputter deposition. The etch and deposition rates of both techniques were studied, as well as the surface morphology and surface roughness.

  11. Nanosecond laser-induced damage at different initial temperatures of Ta{sub 2}O{sub 5} films prepared by dual ion beam sputtering

    SciTech Connect

    Xu, Cheng Jia, Jiaojiao; Fan, Heliang; Qiang, Yinghuai; Liu, Jiongtian; Yang, Di; Hu, Guohang; Li, Dawei

    2014-08-07

    Ta{sub 2}O{sub 5} films were deposited by dual ion beam sputtering method. The nanosecond laser-induced damage threshold (LIDT) at different initial temperatures and time of the films was investigated by an in situ high temperature laser-induced damage testing platform. It was shown that, when the initial temperature increased from 298 K to 383 K, the LIDT at 1064 nm and 12 ns significantly decreased by nearly 14%. Then the LIDT at 1064 nm and 12 ns decreased slower with the same temperature increment. Different damage morphologies were found at different initial temperatures. At low initial temperatures, it was the defects-isolated damage while at high initial temperatures it was the defects-combined damage. The theoretical calculations based on the defect-induced damage model revealed that both the significant increase of the highest temperature and the duration contributed to the different damage morphologies. With the initial temperature being increased, the thermal-stress coupling damage mechanism transformed gradually to the thermal dominant damage mechanism.

  12. Tribological properties of metal doped a-C film by RF magnetron sputtering method

    SciTech Connect

    Park, Yong Seob; Jung, Tae-Hwan; Lim, Dong-Gun; Park, Young; Kim, Hyungchul; Choi, Won Seok

    2012-10-15

    We deposited various metal doped amorphous carbon (a-C:Me) films by radio frequency (RF) magnetron co-sputtering method. Tungsten (W), molybdenum (Mo), and chromium (Cr) were used as the doping metals in a-C film. The applied power on carbon and metal (W, Mo, and Cr) target were 150 W and 40 W, respectively. a-C:Me films exhibited smooth and uniform surface roughness and the hardness over 15 GPa. Specially, a-C:W film showed the maximum hardness of 18.5 GPa. The coefficient of friction of a-C:W film is relatively lower than that of other films and the critical load value of a-C:W film is higher. These results are related to the concentration of metal in the carbon matrix by the difference of sputtering yield and the change of the structure by the metal bonding. Consequently, W metal is good candidate as the doping metal for the improvement of tribological characteristics.

  13. Improving the growth of Ge/Si islands by modulating the spacing between screen and accelerator grids in ion beam sputtering deposition system

    NASA Astrophysics Data System (ADS)

    Yang, Jie; Zhao, Bo; Wang, Chong; Qiu, Feng; Wang, Rongfei; Yang, Yu

    2016-11-01

    Ge islands were fabricated on Si buffer layer by ion beam sputtering deposition with a spacing between the screen and accelerator grids of either 1 mm or 2 mm. The Si buffer layer exhibits mixed-phase microcrystallinity for samples grown with 1 mm spacing and crystallinity for those with 2 mm spacing. Ge islands are larger and less dense than those grown on the crystalline buffer because of the selective growth mechanism on the microcrystalline buffer. Moreover, the nucleation site of Ge islands formed on the crystalline Si buffer is random. Ge islands grown at different grid-to-grid gaps are characterized by two key factors, namely, divergence half angle of ion beam and crystallinity of buffer layer. High grid-to-grid spacing results in small divergence half angle, thereby enhancing the sputtering energy and redistribution of sputtered atoms. The crystalline volume fraction of the microcrystalline Si buffer was obtained based on the integrated intensity ratio of Raman peaks. The islands show decreased density with decreasing crystalline volume fraction and are difficult to observe at crystalline volume fractions lower than 72%.

  14. Sputtering deposition of magnetic Ni nanoparticles directly onto an enzyme surface: a novel method to obtain a magnetic biocatalyst.

    PubMed

    Bussamara, Roberta; Eberhardt, Dario; Feil, Adriano F; Migowski, Pedro; Wender, Heberton; de Moraes, Diogo P; Machado, Giovanna; Papaléo, Ricardo M; Teixeira, Sérgio R; Dupont, Jairton

    2013-02-14

    A simple one-step method based on the sputtering deposition of Ni nanoparticles (NP) has been developed for the production of magnetic biocatalysts, avoiding the complications and drawbacks of methods based on chemical functionalisation or coating of magnetic NP. This new technique provided high levels of recovery, reusability and catalytic activity for the lipase-Ni biocatalyst.

  15. Synthesis of silicon oxynitride by ion beam sputtering and the effects of nitrogen ion-assisted bombardment

    NASA Astrophysics Data System (ADS)

    Lambrinos, M. F.; Valizadeh, R.; Colligon, J. S.

    1997-05-01

    Thin silicon oxynitride (SiO xN y) films were synthesised without substrate heating by means of N 2+ ion-beam sputtering of a silicon nitride target at an energy of 1000 eV in a N 2 and O 2 ambient with and without 200 eV N 2+ ion assistance. Unassisted films were deposited in a controlled O 2 partial pressure ranging from ambient to 5.0 × 10 -3 Pa whereas assisted films were deposited at a fixed O 2 partial pressure of 1.0 × 10 -3 Pa. The O/(O+N) atomic fraction and the SiO xN y asymmetric stretch mode IR absorption peak wavenumber of unassisted films increased almost linearly with increasing O 2 partial pressure, from 0.2 to 1.0 and 860 cm -1 to 1050 cm -1, respectively, while their refractive indices decreased from 1.92 to 1.46. The behaviour of the SiO xN y film refractive index with the SiO 2 fraction has been compared to that predicted by Drude, Lorentz-Lorenz and Bruggeman models under the assumption that the film is a mixture of SiO 2 and Si 3N 4 phases. For a fixed O 2 partial pressure, the O content of the N 2+ ion-assisted films increased with an increase in the N + ion to Si atom arrival ratio from 0 to 3. This increase in O content correlate with changes in the film refractive index and SiO xN y asymmetric stretch mode absorption peak position, from 1.56 to 1.43 and 1014 cm -1 to 1054 cm -1, respectively, indicating that the O/N atomic ratio increases with increasing N + ion to Si atom ratio until film properties consistent with stoichiometric SiO 2 are obtained.

  16. Plasmonic properties of Ag nanoparticles embedded in GeO2-SiO2 matrix by atom beam sputtering.

    PubMed

    Mohapatra, Satyabrata

    2016-02-01

    Nanocomposite thin films containing Ag nanoparticles embedded in the GeO2-SiO2 matrix were synthesized by the atom beam co-sputtering technique. The structural, optical and plasmonic properties and the chemical composition of the nanocomposite thin films were studied by transmission electron microscopy (TEM) with energy dispersive X-ray spectroscopy (EDX), UV-visible absorption spectroscopy and X-ray photoelectron spectroscopy (XPS). UV-visible absorption studies on Ag-SiO2 nanocomposites revealed the presence of a strong localized surface plasmon resonance (LSPR) peak characteristic of Ag nanoparticles at 413 nm, which showed a blue shift of 26 nm (413 to 387 nm) along with a significant broadening and drastic decrease in intensity with the incorporation of 16 at% of Ge into the SiO2 matrix. TEM studies on Ag-GeO2-SiO2 nanocomposite thin films confirmed the presence of Ag nanoparticles with an average size of 3.8 nm in addition to their aggregates with an average size of 16.2 nm. Thermal annealing in air resulted in strong enhancement in the intensity of the LSPR peak, which showed a regular red shift of 51 nm (from 387 to 438 nm) with the increase in annealing temperature up to 500 °C. XPS studies showed that annealing in air resulted in oxidation of excess Ge atoms in the nanocomposite into GeO2. Our work demonstrates the possibility of controllably tuning the LSPR of Ag nanoparticles embedded in the GeO2-SiO2 matrix by single-step thermal annealing, which is interesting for optical applications.

  17. Fabrication of ultrathin Ni-Zn ferrite films using electron cyclotron resonance sputtering method

    SciTech Connect

    Tanaka, Terumitsu; Kurisu, Hiroki; Matsuura, Mitsuru; Shimosato, Yoshihiro; Okada, Shigenobu; Oshiro, Kazunori; Fujimori, Hirotaka; Yamamoto, Setsuo

    2006-04-15

    Well-crystallized Ni-Zn ferrite (Ni{sub 0.4}Zn{sub 0.6}Fe{sub 2}O{sub 4}) highly oriented ultrathin films were obtained at a substrate temperature of 200 deg. C by a reactive sputtering method utilizing electron cyclotron resonance microwave plasma, which is very effective to crystallize oxide or nitride materials without heat treatment. Thin films of Ni-Zn ferrite deposited on a MgO (100) underlayer showed an intense X-ray-diffraction peak of (400) from the Ni-Zn ferrite as compared to similar films deposited directly onto thermally oxidized Si substrates. A 1.5-nm-thick Ni-Zn ferrite film, which corresponds to twice the lattice constant for bulk Ni-Zn ferrite, crystallized on a MgO (100) underlayer.

  18. Inner Crack Detection Method for Cantilever Beams

    NASA Astrophysics Data System (ADS)

    Li, Zheng; Zhang, Wei; Li, Yixuan; Su, Xianyue

    2008-02-01

    In this paper, continuous wavelet transform has been performed to extract the inner crack information from the guided waves in cantilever beams, and the location and size of crack can be detected exactly. Considering its best time-frequency property, Gabor continuous wavelet transform is employed to analyze the complicated flexible wave signals in cantilever beam, which is inspirited by an impact on the free end. Otherwise, in order to enhance the sensitivity of detection for some small cracks, an improved method is discussed. Here, both computational and experimental methods are carried out for comparing the influence of different crack location in beam. Therefore, the method proposed can be expected to expand to a powerful damage detection method in a broad engineering application.

  19. Synthesis of in-plane and stacked graphene/hexagonal boron nitride heterostructures by combining with ion beam sputtering deposition and chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Meng, Jun Hua; Zhang, Xing Wang; Wang, Hao Lin; Ren, Xi Biao; Jin, Chuan Hong; Yin, Zhi Gang; Liu, Xin; Liu, Heng

    2015-09-01

    Graphene/hexagonal boron nitride (h-BN) heterostructures have attracted a great deal of attention in recent years due to their unique and complementary properties for use in a wide range of potential applications. However, it still remains a challenge to synthesize large-area high quality samples by a scalable growth method. In this work, we present the synthesis of both in-plane and stacked graphene/h-BN heterostructures on Cu foils by sequentially depositing h-BN via ion beam sputtering deposition (IBSD) and graphene with chemical vapor deposition (CVD). Due to a significant difference in the growth rate of graphene on h-BN and Cu, the in-plane graphene/h-BN heterostructures were rapidly formed on h-BN domain/Cu substrates. The large-area vertically stacked graphene/h-BN heterostructures were obtained by using the continuous h-BN film as a substrate. Furthermore, the well-designed sub-bilayered h-BN substrates provide direct evidence that the monolayered h-BN on Cu exhibits higher catalytic activity than the bilayered h-BN on Cu. The growth method applied here may have great potential in the scalable preparation of large-area high-quality graphene/h-BN heterostructures.Graphene/hexagonal boron nitride (h-BN) heterostructures have attracted a great deal of attention in recent years due to their unique and complementary properties for use in a wide range of potential applications. However, it still remains a challenge to synthesize large-area high quality samples by a scalable growth method. In this work, we present the synthesis of both in-plane and stacked graphene/h-BN heterostructures on Cu foils by sequentially depositing h-BN via ion beam sputtering deposition (IBSD) and graphene with chemical vapor deposition (CVD). Due to a significant difference in the growth rate of graphene on h-BN and Cu, the in-plane graphene/h-BN heterostructures were rapidly formed on h-BN domain/Cu substrates. The large-area vertically stacked graphene/h-BN heterostructures were

  20. Transport properties of discontinuous Co{sub 80}Fe{sub 20}/Al{sub 2}O{sub 3} multilayers, prepared by ion beam sputtering

    SciTech Connect

    Kakazei, G.N.; Freitas, P.P.; Cardoso, S.; Lopes, A.M.L.; Pereira de Azevedo, M.M.; Pogorelov, Y.G.; Sousa, J.B.

    1999-09-01

    Ion beam sputtered Co{sub 80}Fe{sub 20}(t)/Al{sub 2}O{sub 3}(30 {angstrom}) multilayers were obtained. The Co{sub 80}Fe{sub 20} layers become discontinuous for nominal thicknesses T {le} 18{angstrom}. Tunnel magnetoresistance was measured in CIP and CPP geometries, reaching up to 6.5% at room temperature and 11% at 15 K, for as-deposited films in CIP geometry. The temperature dependence of MR was found quite different for the two geometries: fairly strong in the CIP case and almost absent in the CPP geometry. A model is proposed to explain these large differences in behavior.

  1. Quantitative analysis of growth-induced reduction of long range lattice order in ion-beam sputtered YBa2Cu3O6.9 films

    NASA Astrophysics Data System (ADS)

    Gauzzi, Andrea; Pavuna, Davor

    1995-04-01

    We report evidence for the reduction of long range lattice order caused by slight departures from the optimal growth temperature in fully doped (x≊0.9) YBa2Cu3O6+x films deposited by ion-beam sputtering on <001> SrTiO3. We estimate the characteristic length of this disorder from the broadening Δϑ of the <005> x-ray diffraction rocking curve. The depression of superconductivity and normal conductivity scales as Δϑ and disappears when the in-plane lattice coherence length rc˜1/Δϑ is larger than ≊10 nm.

  2. Interdependence between stress, preferred orientation, and surface morphology of nanocrystalline TiN thin films deposited by dual ion beam sputtering

    SciTech Connect

    Abadias, G.; Tse, Y.Y.; Guerin, Ph.; Pelosin, V.

    2006-06-01

    To clarify the underlying mechanisms that cause the preferred orientation in TiN films, we investigated the evolution with the thickness of the texture, surface morphology, and residual stress in TiN thin films deposited by dual ion beam sputtering. The films, with thickness h ranging from 50 to 300 nm, were grown on oxidized Si substrates using a primary Ar ion beam accelerated under 1.2 kV and different voltages V{sub a} of the (Ar+N{sub 2}) assistance beam: 25, 50, and 150 V. The influence of temperature was also investigated by varying the substrate temperature T{sub s} (25-300 deg. C) during growth or by performing a postdeposition annealing. X-ray diffraction (XRD) as well as transmission electron microscopy were used to study the microstructure and changes of texture with thickness h, while x-ray reflectivity and atomic force microscopy measurements were performed to determine the surface roughness. Residual stresses were measured by XRD and analyzed using a triaxial stress model. The crystallite group method was used for a strain determination of crystallites having different fiber axis directions, i.e., when a mixed texture exists. The surface roughness is found to increase with V{sub a} and T{sub s} due to the resputtering effect of the film surface. XRD reveals that for a small thickness (h{approx}50 nm) the TiN films exhibit a strong (002) texture independent of V{sub a}. For a larger thickness (100

  3. The influence of Atomic Oxygen on the Figure of Merit of Indium Tin Oxide thin Films grown by reactive Dual Ion Beam Sputtering

    NASA Astrophysics Data System (ADS)

    Geerts, Wilhelmus; Simpson, Nelson; Woodall, Allen; Compton, Maclyn

    2014-03-01

    Indium Tin Oxide (ITO) is a transparent conducting oxide that is used in flat panel displays and optoelectronics. Highly conductive and transparent ITO films are normally produced by heating the substrate to 300 Celsius during deposition excluding plastics to be used as a substrate material. We investigated whether high quality ITO films can be sputtered at room temperature using atomic instead of molecular oxygen. The films were deposited by dual ion beam sputtering (DIBS). During deposition the substrate was exposed to a molecular or an atomic oxygen flux. Microscope glass slides and silicon wafers were used as substrates. A 29 nm thick SIO2 buffer layer was used. Optical properties were measured with a M2000 Woollam variable angle spectroscopic ellipsometer. Electrical properties were measured by linear four point probe using a Jandel 4pp setup employing silicon carbide electrodes, high input resistance, and Keithley low bias current buffer amplifiers. The figure of merit (FOM), i.e. the ratio of the conductivity and the average optical absorption coefficient (400-800 nm), was calculated from the optical and electric properties and appeared to be 1.2 to 5 times higher for the samples sputtered with atomic oxygen. The largest value obtained for the FOM was 0.08 reciprocal Ohms. The authors would like to thank the Research Corporation for Financial Support.

  4. Apparatus and method for laser beam diagnosis

    DOEpatents

    Salmon, Jr., Joseph T.

    1991-01-01

    An apparatus and method is disclosed for accurate, real time monitoring of the wavefront curvature of a coherent laser beam. Knowing the curvature, it can be quickly determined whether the laser beam is collimated, or focusing (converging), or de-focusing (diverging). The apparatus includes a lateral interferometer for forming an interference pattern of the laser beam to be diagnosed. The interference pattern is imaged to a spatial light modulator (SLM), whose output is a coherent laser beam having an image of the interference pattern impressed on it. The SLM output is focused to obtain the far-field diffraction pattern. A video camera, such as CCD, monitors the far-field diffraction pattern, and provides an electrical output indicative of the shape of the far-field pattern. Specifically, the far-field pattern comprises a central lobe and side lobes, whose relative positions are indicative of the radius of curvature of the beam. The video camera's electrical output may be provided to a computer which analyzes the data to determine the wavefront curvature of the laser beam.

  5. Apparatus and method for laser beam diagnosis

    DOEpatents

    Salmon, J.T. Jr.

    1991-08-27

    An apparatus and method are disclosed for accurate, real time monitoring of the wavefront curvature of a coherent laser beam. Knowing the curvature, it can be quickly determined whether the laser beam is collimated, or focusing (converging), or de-focusing (diverging). The apparatus includes a lateral interferometer for forming an interference pattern of the laser beam to be diagnosed. The interference pattern is imaged to a spatial light modulator (SLM), whose output is a coherent laser beam having an image of the interference pattern impressed on it. The SLM output is focused to obtain the far-field diffraction pattern. A video camera, such as CCD, monitors the far-field diffraction pattern, and provides an electrical output indicative of the shape of the far-field pattern. Specifically, the far-field pattern comprises a central lobe and side lobes, whose relative positions are indicative of the radius of curvature of the beam. The video camera's electrical output may be provided to a computer which analyzes the data to determine the wavefront curvature of the laser beam. 11 figures.

  6. Impact tests of the tungsten coated stainless steels prepared by using magnetron sputtering with ion beam mixing or electron beam alloying treatment

    NASA Astrophysics Data System (ADS)

    Zou, Yu; Zhan, Chang-Yong; Yang, Bin; Wu, Jian-Chun

    2013-05-01

    Tungsten films were deposited on stainless steel (SS) with ion beam mixing (IBM) or electron beam alloying (EBA) treatment. The ductile-brittle transition behaviors of the specimens were investigated by means of instrumented Charpy impact test at a series of temperature, and SEM was used to observe the morphology of the cross section. Impact tests show that different treatment methods with W films do not have much influence on crack initiation, while EBA treatment with W films can more effectively prevent crack propagation, namely improve the impact toughness of SS than using IBM treatment. The reason that caused this difference was discussed.

  7. Dielectric thin-films by ion-beam sputtering deposition for III-V based infrared optoelectronic imaging

    NASA Astrophysics Data System (ADS)

    Nguyen, Jean

    The growing technological industry is demanding the development of powerful and smaller devices. Dielectric thin-films can play an important role to help push towards achieving these goals. However, their advantage of high-quality material and low material costs compared to bulk can only be achieved with consideration of the technique, conditions, and parameters. The sensitivity makes every step in the process extremely important, beginning from substrate preparation to the first initial layers of growth and ending with the testing/modeling of the devices. Further, not all applications want bulk-like properties, so the ability to adjust and fine tune the material characteristics opens up a wide range of opportunities with the advancements and can drive the power of the devices to an ultimate level. This work provides the motivation, theoretical basis, and experimental results for performance enhancement of optoelectronic devices through the use of high-quality dielectric thin-films by ion-beam sputtering deposition (IBSD). The advantages and disadvantages to this technique are demonstrated and compared to others. The optimization processes, relationships, and motivation of using seven different thin-film materials have been detailed and provided. Using IBSD, the performance improvements were demonstrated on infrared lasers and detectors. For lasers, a 170% increase in maximum output power was achieved using near-0% percent anti-reflection coatings (AR) and near-100% high-reflection (HR) coatings. Following, wide tunability was achieved by using the structures in an external cavity laser system, showing nearly a three-fold improvement in tuning range. Also, structurally robust lasers were achieved with a custom-tailored HR structure designed for damage resistance to high output power density operation, showing over 14W of peak output power for MOCVD lasers. For infrared photodetectors, over a 4 orders of magnitude decrease in current density and zero-bias resistance

  8. Method for producing uranium atomic beam source

    DOEpatents

    Krikorian, Oscar H.

    1976-06-15

    A method for producing a beam of neutral uranium atoms is obtained by vaporizing uranium from a compound UM.sub.x heated to produce U vapor from an M boat or from some other suitable refractory container such as a tungsten boat, where M is a metal whose vapor pressure is negligible compared to that of uranium at the vaporization temperature. The compound, for example, may be the uranium-rhenium compound, URe.sub.2. An evaporation rate in excess of about 10 times that of conventional uranium beam sources is produced.

  9. Ion-beam sputtering deposition and magnetoelectric properties of layered heterostructures (FM/PZT/FM)n, where FM - Co or Ni78Fe22

    NASA Astrophysics Data System (ADS)

    Stognij, Alexander; Novitskii, Nikolai; Sazanovich, Andrei; Poddubnaya, Nadezhda; Sharko, Sergei; Mikhailov, Vladimir; Nizhankovski, Viktor; Dyakonov, Vladimir; Szymczak, Henryk

    2013-08-01

    Magnetoelectric properties of layered heterostructures (FM/PZT/FM)n (n≤ 3) obtained by ion-beam sputtering deposition of ferromagnetic metal (FM), where FM is the cobalt (Co) or permalloy Ni78Fe22, onto ferroelectric ceramic based on lead zirconate titanate (PZT) have been studied. The polished ferroelectric plates in thickness from 400 to 20 μm were subjected to finished treatment by ion-beam sputtering. After plasma activation they were covered by the ferromagnetic films from 1 to 6 μm in thickness. Enhanced characteristics of these structures were reached by means of both the thickness optimization of ferroelectric and ferromagnetic layers and obtaining of ferromagnetic/ferroelectric interfaces being free from defects and foreign impurities. Assuming on the basis of analysis of elastic stresses in the ferromagnetic film that the magnetoelectric effect forms within ferromagnetic/ferroelectric interface, the structures with 2-3 ferromagnetic layers were obtained. In layered heterostructure (Py/PZT/Py)3, the optimal thickness of ferromagnetic film was 2 μm, and outer and inner ferroelectric layers had 20 μm and 80 μm in thickness, respectively. For such structure the maximal magnetoelectric voltage coefficient of 250 mV/(cm Oe) was reached at a frequency 100 Hz in magnetic field of 0.25 T at room temperature. The structures studied can serve as energy-independent elements detecting the change of magnetic or electric fields in electronic devices based on magnetoelectric effect.

  10. Rapid Annealing of Cu-In-Ga-Se Precursors by Electron Beam Irradiation Method.

    PubMed

    Lim, Seonkyoung; Kim, Young-Man; Jeong, Chaehwan

    2016-05-01

    Cu-In-Ga-Se precursors were prepared by RF- and DC-sputtering methods and then irradiated with an in-situ electron beam irradiation unit. Ternary (In,Ga)Se2 and binary CuSe targets were simultaneously used for preparation of precursors. The electron dose and irradiation time were kept constant at 300 seconds and 200 W of RF power, respectively, while intensities of accelerated electrons were varied from 2.5 to 4.5 keV. The thickness of all e-beam irradiated CuInGaSe2 (CIGS) films decreased from 1,250 nm to 470 nm. The crystalline properties of e-beam irradiated CIGS films were clearly shown on all samples and the highest intensity of (112) peak at 3.5 keV. The compositional ratio of Cu/(In + Ga) in the e-beam sample irradiated at 3.5 keV was coincident with that of the precursors. The degree of Ga content on the depth of the e-beam sample irradiated at 3.5 keV was uniformly distributed between the TCO/CdS layer and Mo back contact. Electron beam irradiation onto Cu-In-Ga-Se precursors as a rapid annealing method could be an excellent candidate for crystallization to the Cu(In,Ga)Se2 films.

  11. Rapid Annealing of Cu-In-Ga-Se Precursors by Electron Beam Irradiation Method.

    PubMed

    Lim, Seonkyoung; Kim, Young-Man; Jeong, Chaehwan

    2016-05-01

    Cu-In-Ga-Se precursors were prepared by RF- and DC-sputtering methods and then irradiated with an in-situ electron beam irradiation unit. Ternary (In,Ga)Se2 and binary CuSe targets were simultaneously used for preparation of precursors. The electron dose and irradiation time were kept constant at 300 seconds and 200 W of RF power, respectively, while intensities of accelerated electrons were varied from 2.5 to 4.5 keV. The thickness of all e-beam irradiated CuInGaSe2 (CIGS) films decreased from 1,250 nm to 470 nm. The crystalline properties of e-beam irradiated CIGS films were clearly shown on all samples and the highest intensity of (112) peak at 3.5 keV. The compositional ratio of Cu/(In + Ga) in the e-beam sample irradiated at 3.5 keV was coincident with that of the precursors. The degree of Ga content on the depth of the e-beam sample irradiated at 3.5 keV was uniformly distributed between the TCO/CdS layer and Mo back contact. Electron beam irradiation onto Cu-In-Ga-Se precursors as a rapid annealing method could be an excellent candidate for crystallization to the Cu(In,Ga)Se2 films. PMID:27483884

  12. Deposition of CuInSe2 by the hybrid sputtering and evaporation method

    NASA Astrophysics Data System (ADS)

    Rockett, A.; Agarwal, A.; Yang, L. Chung; Banda, E.; Kenshole, G.

    CuInSe2 thin films deposited by a hybrid process combining magnetron sputtering of Cu and In with evaporation of Se have been analyzed and solar cells have been fabricated. The hybrid technique is shown to produce CuInSe2 films of device quality. Heterojunction Mo/CuInSe2/CdS/ITO/Ni devices with photovoltaic conversion efficiencies as high as 7.7 percent have been tested. Device characteristics for the best device include Voc = 0.385 V, Jsc = 32.6 mA, and a fill factor of 61.3 percent. The device required an air anneal to achieve full efficiency. Results of microstructural analyses using transmission electron microscopy are reported. The results assist in determining what limits the performance of these devices. As-deposited CuInSe2 exhibits no measurable differences as compared with CuInSe2 produced by three-source evaporation. All films contain microtwins, stacking faults, and voids. No evidence was found for second phases in material with metal atom fractions as much as 4 percent off stoichiometry. Defect ordering produces features in the diffraction patterns of single-phase material at positions not normally allowed for the chalcopyrite structure. These measurements are compared with results for single crystals grown with the vertical Bridgeman method by Tomlinson (1986). X-ray photoelectron spectroscopy results characterizing the valence band as a function of film composition are also presented.

  13. Properties of Cu-doped ZnO films by RF sputtering method: Thickness dependence

    SciTech Connect

    Sung, Nark-Eon; Lee, Ik-Jae; Thakur, Anup; Chae, Keun Hwa; Shin, Hyun-Joon; Lee, Han-Koo

    2012-10-15

    We present results concerning the thickness dependence of structural, morphological and optical properties of the Zn{sub 0.98}Cu{sub 0.02}O films deposited on glass substrates using radio frequency (RF) sputtering method. The microstructure and the chemical state of oxygen, copper and zinc in ZnO and Zn{sub 0.98}Cu{sub 0.02}O films were investigated by X-ray diffraction spectroscopy (XRD) and X-ray photoelectron spectroscopy (XPS), respectively. The results indicate that Zn{sub 0.98}Cu{sub 0.02}O films are the wurtzite structure with strong c-axis orientation. Crystallinity of the films is closely related to the film thickness. With increasing film thickness, there are more surface (mainly nanopores) defects existing in the Zn{sub 0.98}Cu{sub 0.02}O films and surface roughness increases. XRD and XPS data show that the valence state of copper in the Zn{sub 0.98}Cu{sub 0.02}O films is Cu{sup 2+}. The transparency of all films is more than 85% in the visible region.

  14. Method for sputtering a PIN amorphous silicon semi-conductor device having partially crystallized P and N-layers

    DOEpatents

    Moustakas, Theodore D.; Maruska, H. Paul

    1985-07-09

    A high efficiency amorphous silicon PIN semiconductor device having partially crystallized (microcrystalline) P and N layers is constructed by the sequential sputtering of N, I and P layers and at least one semi-transparent ohmic electrode. The method of construction produces a PIN device, exhibiting enhanced electrical and optical properties, improved physical integrity, and facilitates the preparation in a singular vacuum system and vacuum pump down procedure.

  15. Fabrication of sharp tungsten-coated tip for atomic force microscopy by ion-beam sputter deposition

    SciTech Connect

    Kinoshita, Yukinori; Naitoh, Yoshitaka; Li, Yan Jun; Sugawara, Yasuhiro

    2011-11-15

    Tungsten (W) is significantly suitable as a tip material for atomic force microscopy (AFM) because its high mechanical stiffness enables the stable detection of tip-sample interaction forces. We have developed W sputter-coating equipment to compensate the drawbacks of conventional Si cantilever tips used in AFM measurements. By employing an ion gun commonly used for sputter cleaning of a cantilever tip, the equipment is capable of depositing conductive W films in the preparation chamber of a general ultrahigh vacuum (UHV)-AFM system without the need for an additional chamber or transfer system. This enables W coating of a cantilever tip immediately after sputter cleaning of the tip apex and just before the use in AFM observations. The W film consists of grain structures, which prevent tip dulling and provide sharpness (<3 nm in radius of curvature at the apex) comparable to that of the original Si tip apex. We demonstrate that in non-contact (NC)-AFM measurement, a W-coated Si tip can clearly resolve the atomic structures of a Ge(001) surface without any artifacts, indicating that, as a force sensor, the fabricated W-coated Si tip is superior to a bare Si tip.

  16. Fabrication of sharp tungsten-coated tip for atomic force microscopy by ion-beam sputter deposition.

    PubMed

    Kinoshita, Yukinori; Naitoh, Yoshitaka; Li, Yan Jun; Sugawara, Yasuhiro

    2011-11-01

    Tungsten (W) is significantly suitable as a tip material for atomic force microscopy (AFM) because its high mechanical stiffness enables the stable detection of tip-sample interaction forces. We have developed W sputter-coating equipment to compensate the drawbacks of conventional Si cantilever tips used in AFM measurements. By employing an ion gun commonly used for sputter cleaning of a cantilever tip, the equipment is capable of depositing conductive W films in the preparation chamber of a general ultrahigh vacuum (UHV)-AFM system without the need for an additional chamber or transfer system. This enables W coating of a cantilever tip immediately after sputter cleaning of the tip apex and just before the use in AFM observations. The W film consists of grain structures, which prevent tip dulling and provide sharpness (<3 nm in radius of curvature at the apex) comparable to that of the original Si tip apex. We demonstrate that in non-contact (NC)-AFM measurement, a W-coated Si tip can clearly resolve the atomic structures of a Ge(001) surface without any artifacts, indicating that, as a force sensor, the fabricated W-coated Si tip is superior to a bare Si tip.

  17. Stress induced growth of Sn nanowires in a single step by sputtering method

    SciTech Connect

    Yadav, A. Kothari, D. C.; Patel, N.; Miotello, A.

    2015-06-24

    Sn nanowires in aluminum film have been synthesized in a single step by co-sputtering of Al and Sn targets. Due to immiscibility of Sn and Al, co-sputtering leads to generation of stress in the composite film. In order to attain thermodynamic equilibrium, Sn separates from Al and diffuses towards the grain boundaries. External perturbation due to ambient atmosphere leads to corrosion at the grain boundaries forming pits which provide path for Sn to evolve. Owing to this, extrusion of Sn nanowires from Al film occurs to release the residual stress in the film.

  18. Low-temperature method for enhancing sputter-deposited HfO{sub 2} films with complete oxidization

    SciTech Connect

    Tsai, C.-T.; Chang, T.-C.; Liu, P.-T.; Yang, P.-Y.; Kuo, Y.-C.; Kin, K.-T.; Chang, P.-L.; Huang, F.-S.

    2007-07-02

    A low-temperature method, supercritical CO{sub 2} fluid (SCF) technology, is proposed to improve the dielectric properties of ultrathin hafnium oxide (HfO{sub 2}) film at 150 deg. C without significant formation of parasitic oxide at the interface between HfO{sub 2} and Si substrate. In this research, the HfO{sub 2} films were deposited by dc sputter at room temperature and post-treated by SCF which is mixed with 5 vol % propyl alcohol and 5 vol % H{sub 2}O. From high-resolution transmission electron microscopy image, the interfacial oxide of SCF-treated HfO{sub 2} film is only 5 A ring thick. Additionally, the enhancements in the qualities of sputter-deposited HfO{sub 2} film after SCF process are exhibited by x-ray photoelectron spectroscopy and capacitance-voltage (C-V) measurement.

  19. Multi-jump magnetic switching in ion-beam sputtered amorphous Co{sub 20}Fe{sub 60}B{sub 20} thin films

    SciTech Connect

    Raju, M.; Chaudhary, Sujeet; Pandya, D. K.

    2013-08-07

    Unconventional multi-jump magnetization reversal and significant in-plane uniaxial magnetic anisotropy (UMA) in the ion-beam sputtered amorphous Co{sub 20}Fe{sub 60}B{sub 20}(5–75 nm) thin films grown on Si/amorphous SiO{sub 2} are reported. While such multi-jump behavior is observed in CoFeB(10 nm) film when the magnetic field is applied at 10°–20° away from the easy-axis, the same is observed in CoFeB(12.5 nm) film when the magnetic field is 45°–55° away from easy-axis. Unlike the previous reports of multi-jump switching in epitaxial films, their observance in the present case of amorphous CoFeB is remarkable. This multi-jump switching is found to disappear when the films are crystallized by annealing at 420 °C. The deposition geometry and the energy of the sputtered species appear to intrinsically induce a kind of bond orientation anisotropy in the films, which leads to the UMA in the as-grown amorphous CoFeB films. Exploitation of such multi-jump switching in amorphous CoFeB thin films could be of technological significance because of their applications in spintronic devices.

  20. Influence of the Cs partial pressure on the optical and electrical properties of ITO films prepared by dc sputter type negative metal ion beam deposition

    NASA Astrophysics Data System (ADS)

    Kim, Daeil

    2003-12-01

    The influence of cesium (Cs) partial pressure ( PCs) in the sputtering atmosphere on the opto-electrical and surface morphological property of ITO thin films deposited onto unheated polycarbonate substrate was investigated. The deposition technique used was a dc sputter type negative metal ion beam source which uses Cs as a surface negative ionization agent. During deposition Ar gas flow rate, deposition pressure and bipolar dc power were kept constant at 30 sccm, 9 × 10 -2 Pa, and 250 W, respectively. As increase PCs both electrical conductivity and optical transmittance of the film were increased. The lowest resistivity of 5.1 × 10 -4 Ω cm and optical transmittance of 89% at 550 nm were measured in the ITO film deposited at PCs of 1.7 × 10 -3 Pa. Surface morphology of ITO film was also varied with PCs and the lowest surface roughness (Ra: 1.16 nm) was obtained a tCs of 1.7 × 10 -3 Pa.

  1. Magnetically attached sputter targets

    DOEpatents

    Makowiecki, D.M.; McKernan, M.A.

    1994-02-15

    An improved method and assembly for attaching sputtering targets to cathode assemblies of sputtering systems which includes a magnetically permeable material is described. The magnetically permeable material is imbedded in a target base that is brazed, welded, or soldered to the sputter target, or is mechanically retained in the target material. Target attachment to the cathode is achieved by virtue of the permanent magnets and/or the pole pieces in the cathode assembly that create magnetic flux lines adjacent to the backing plate, which strongly attract the magnetically permeable material in the target assembly. 11 figures.

  2. Magnetically attached sputter targets

    DOEpatents

    Makowiecki, Daniel M.; McKernan, Mark A.

    1994-01-01

    An improved method and assembly for attaching sputtering targets to cathode assemblies of sputtering systems which includes a magnetically permeable material. The magnetically permeable material is imbedded in a target base that is brazed, welded, or soldered to the sputter target, or is mechanically retained in the target material. Target attachment to the cathode is achieved by virtue of the permanent magnets and/or the pole pieces in the cathode assembly that create magnetic flux lines adjacent to the backing plate, which strongly attract the magnetically permeable material in the target assembly.

  3. Characterizing a proton beam with two different methods in beam halo experiments

    NASA Astrophysics Data System (ADS)

    Jiang, Hong-Ping; Fu, Shi-Nian; Peng, Jun; Cheng, Peng; Huang, Tao; Li, Peng; Li, Fang; Li, Jian; Liu, Hua-Chang; Liu, Mei-Fei; Meng, Ming; Meng, Cai; Mu, Zhen-Cheng; Rong, Lin-Yan; Ouyang, Hua-Fu; Sun, Biao; Wang, Bo; Tian, Jian-Min; Wang, Biao; Wang, Sheng-Chang; Yao, Yuan; Xu, Tao-Guang; Xu, Xin-An; Xin, Wen-Qu; Zhao, Fu-Xiang; Zeng, Lei; Zhou, Wen-Zhong

    2014-08-01

    In beam halo experiments, it is very important to correctly characterize the RFQ output proton beam. In order to simulate the beam dynamics properly, we must first know the correct initial beam parameters. We have used two different methods, quadrupole scans and multi-wire scanners to determine the transverse phase-space properties of the proton beam. The experimental data were analyzed by fitting to the 3-D nonlinear simulation code IMPACT. For the quadrupole scan method, we found that the RMS beam radius and the measured beam-core profiles agreed very well with the simulations. For the multi-wire scanner method, we choose the case of a matched beam. By fitting the IMPACT simulation results to the measured data, we obtained the Courant-Snyder parameters and the emittance of the beam. The difference between the two methods is about eight percent, which is acceptable in our experiments.

  4. Mass spectrometer and methods of increasing dispersion between ion beams

    DOEpatents

    Appelhans, Anthony D.; Olson, John E.; Delmore, James E.

    2006-01-10

    A mass spectrometer includes a magnetic sector configured to separate a plurality of ion beams, and an electrostatic sector configured to receive the plurality of ion beams from the magnetic sector and increase separation between the ion beams, the electrostatic sector being used as a dispersive element following magnetic separation of the plurality of ion beams. Other apparatus and methods are provided.

  5. Room temperature magnetoresistance in CoFeB/SrTiO{sub 3}/CoFeB magnetic tunnel junctions deposited by ion beam sputtering

    SciTech Connect

    Hassen, E. M. J.; Viala, B.; Cyrille, M. C.; Cartier, M.; Redon, O.; Lima, P.; Belhadji, B.; Yang, H. X.; Chshiev, M.; Velev, J.

    2012-04-01

    Room temperature transport properties are reported in polycrystalline SrTiO{sub 3}-based magnetic tunnel junctions deposited by ion beam sputtering. The junctions comprise CoFeB electrodes and the SrTiO{sub 3} barrier with thickness varied between 0.9 and 1.9 nm. Resistance area product values between 3 {Omega}.{mu}m{sup 2} and 22 k{Omega}.{mu}m{sup 2} have been measured with a tunnel magnetoresistance ratio ranging from 3.1 to 13% at room temperature. At low barrier thickness (1.2 nm), ferromagnetic coupling between electrodes is observed, indicating the presence of defects in the structure. A post-oxidation step was found to improve transport properties at lower barrier thickness.

  6. Development of W/C soft x-ray multilayer mirror by ion beam sputtering (IBS) system for below 50A wavelength

    SciTech Connect

    Biswas, A.; Bhattacharyya, D.

    2012-06-25

    A home-made Ion Beam Sputtering (IBS) system has been developed in our laboratory. Using the IBS system single layer W and single layer C film has been deposited at 1000eV Ar ion energy and 10mA ion current. The W-film has been characterized by grazing Incidence X-ray reflectrometry (GIXR) technique and Atomic Force Microscope technique. The single layer C-film has been characterized by Spectroscopic Ellipsometric technique. At the same deposition condition 25-layer W/C multilayer film has been deposited which has been designed for using as mirror at 30 Degree-Sign grazing incidence angle around 50A wavelength. The multilayer sample has been characterized by measuring reflectivity of CuK{alpha} radiation and soft x-ray radiation around 50A wavelength.

  7. Formation of (Ti,Al)N/Ti{sub 2}AlN multilayers after annealing of TiN/TiAl(N) multilayers deposited by ion beam sputtering

    SciTech Connect

    Dolique, V.; Jaouen, M.; Cabioc'h, T.; Pailloux, F.; Guerin, Ph.; Pelosin, V.

    2008-04-15

    By using ion beam sputtering, TiN/TiAl(N) multilayers of various modulation wavelengths ({lambda}=8, 13, and 32 nm) were deposited onto silicon substrates at room temperature. After annealing at 600 deg. C in vacuum, one obtains for {lambda}=13 nm a (Ti,Al)N/Ti{sub 2}AlN multilayer as it is evidenced from x-ray diffraction, high resolution transmission electron microscopy, and energy filtered electron imaging experiments. X-ray photoelectron spectroscopy (XPS) experiments show that the as-deposited TiAl sublayers contain a noticeable amount of nitrogen atoms which mean concentration varies with the period {lambda}. They also evidenced the diffusion of aluminum into TiN sublayers after annealing. Deduced from these observations, we propose a model to explain why this solid-state phase transformation depends on the period {lambda} of the multilayer.

  8. Influence of in-situ annealing ambient on p-type conduction in dual ion beam sputtered Sb-doped ZnO thin films

    SciTech Connect

    Pandey, Sushil Kumar; Kumar Pandey, Saurabh; Awasthi, Vishnu; Mukherjee, Shaibal; Gupta, M.; Deshpande, U. P.

    2013-08-12

    Sb-doped ZnO (SZO) films were deposited on c-plane sapphire substrates by dual ion beam sputtering deposition system and subsequently annealed in-situ in vacuum and in various proportions of O{sub 2}/(O{sub 2} + N{sub 2})% from 0% (N{sub 2}) to 100% (O{sub 2}). Hall measurements established all SZO films were p-type, as was also confirmed by typical diode-like rectifying current-voltage characteristics from p-ZnO/n-ZnO homojunction. SZO films annealed in O{sub 2} ambient exhibited higher hole concentration as compared with films annealed in vacuum or N{sub 2} ambient. X-ray photoelectron spectroscopic analysis confirmed that Sb{sup 5+} states were more preferable in comparison to Sb{sup 3+} states for acceptor-like Sb{sub Zn}-2V{sub Zn} complex formation in SZO films.

  9. Validating mass spectrometry measurements of nuclear materials via a non-contact volume analysis method of ion sputter craters

    SciTech Connect

    Willingham, David G.; Naes, Benjamin E.; Fahey, Albert J.

    2015-01-01

    A combination of secondary ion mass spectrometry, optical profilometry and a statistically-driven algorithm was used to develop a non-contact volume analysis method to validate the useful yields of nuclear materials. The volume analysis methodology was applied to ion sputter craters created in silicon and uranium substrates sputtered by 18.5 keV O- and 6.0 keV Ar+ ions. Sputter yield measurements were determined from the volume calculations and were shown to be comparable to Monte Carlo calculations and previously reported experimental observations. Additionally, the volume calculations were used to determine the useful yields of Si+, SiO+ and SiO2+ ions from the silicon substrate and U+, UO+ and UO2+ ions from the uranium substrate under 18.5 keV O- and 6.0 keV Ar+ ion bombardment. This work represents the first steps toward validating the interlaboratory and cross-platform performance of mass spectrometry for the analysis of nuclear materials.

  10. Growth of Co2FeAl Heusler alloy thin films on Si(100) having very small Gilbert damping by Ion beam sputtering.

    PubMed

    Husain, Sajid; Akansel, Serkan; Kumar, Ankit; Svedlindh, Peter; Chaudhary, Sujeet

    2016-01-01

    The influence of growth temperature Ts (300-773 K) on the structural phase ordering, static and dynamic magnetization behaviour has been investigated in ion beam sputtered full Heusler alloy Co2FeAl (CFA) thin films on industrially important Si(100) substrate. The B2 type magnetic ordering is established in these films based on the clear observation of the (200) diffraction peak. These ion beam sputtered CFA films possess very small surface roughness of the order of subatomic dimensions (<3 Å) as determined from the fitting of XRR spectra and also by AFM imaging. This is supported by the occurrence of distinct Kiessig fringes spanning over the whole scanning range (~4°) in the x-ray reflectivity (XRR) spectra. The Gilbert damping constant α and effective magnetization 4πMeff are found to vary from 0.0053 ± 0.0002 to 0.0015 ± 0.0001 and 13.45 ± 00.03 kG to 14.03 ± 0.04 kG, respectively. These Co2FeAl films possess saturation magnetization ranging from 4.82 ± 0.09 to 5.22 ± 0.10 μB/f.u. consistent with the bulk L21-type ordering. A record low α-value of 0.0015 is obtained for Co2FeAl films deposited on Si substrate at Ts ~ 573 K. PMID:27357004

  11. Growth of Co2FeAl Heusler alloy thin films on Si(100) having very small Gilbert damping by Ion beam sputtering.

    PubMed

    Husain, Sajid; Akansel, Serkan; Kumar, Ankit; Svedlindh, Peter; Chaudhary, Sujeet

    2016-06-30

    The influence of growth temperature Ts (300-773 K) on the structural phase ordering, static and dynamic magnetization behaviour has been investigated in ion beam sputtered full Heusler alloy Co2FeAl (CFA) thin films on industrially important Si(100) substrate. The B2 type magnetic ordering is established in these films based on the clear observation of the (200) diffraction peak. These ion beam sputtered CFA films possess very small surface roughness of the order of subatomic dimensions (<3 Å) as determined from the fitting of XRR spectra and also by AFM imaging. This is supported by the occurrence of distinct Kiessig fringes spanning over the whole scanning range (~4°) in the x-ray reflectivity (XRR) spectra. The Gilbert damping constant α and effective magnetization 4πMeff are found to vary from 0.0053 ± 0.0002 to 0.0015 ± 0.0001 and 13.45 ± 00.03 kG to 14.03 ± 0.04 kG, respectively. These Co2FeAl films possess saturation magnetization ranging from 4.82 ± 0.09 to 5.22 ± 0.10 μB/f.u. consistent with the bulk L21-type ordering. A record low α-value of 0.0015 is obtained for Co2FeAl films deposited on Si substrate at Ts ~ 573 K.

  12. Growth of Co2FeAl Heusler alloy thin films on Si(100) having very small Gilbert damping by Ion beam sputtering

    NASA Astrophysics Data System (ADS)

    Husain, Sajid; Akansel, Serkan; Kumar, Ankit; Svedlindh, Peter; Chaudhary, Sujeet

    2016-06-01

    The influence of growth temperature Ts (300–773 K) on the structural phase ordering, static and dynamic magnetization behaviour has been investigated in ion beam sputtered full Heusler alloy Co2FeAl (CFA) thin films on industrially important Si(100) substrate. The B2 type magnetic ordering is established in these films based on the clear observation of the (200) diffraction peak. These ion beam sputtered CFA films possess very small surface roughness of the order of subatomic dimensions (<3 Å) as determined from the fitting of XRR spectra and also by AFM imaging. This is supported by the occurrence of distinct Kiessig fringes spanning over the whole scanning range (~4°) in the x-ray reflectivity (XRR) spectra. The Gilbert damping constant α and effective magnetization 4πMeff are found to vary from 0.0053 ± 0.0002 to 0.0015 ± 0.0001 and 13.45 ± 00.03 kG to 14.03 ± 0.04 kG, respectively. These Co2FeAl films possess saturation magnetization ranging from 4.82 ± 0.09 to 5.22 ± 0.10 μB/f.u. consistent with the bulk L21-type ordering. A record low α-value of 0.0015 is obtained for Co2FeAl films deposited on Si substrate at Ts ~ 573 K.

  13. Growth of Co2FeAl Heusler alloy thin films on Si(100) having very small Gilbert damping by Ion beam sputtering

    PubMed Central

    Husain, Sajid; Akansel, Serkan; Kumar, Ankit; Svedlindh, Peter; Chaudhary, Sujeet

    2016-01-01

    The influence of growth temperature Ts (300–773 K) on the structural phase ordering, static and dynamic magnetization behaviour has been investigated in ion beam sputtered full Heusler alloy Co2FeAl (CFA) thin films on industrially important Si(100) substrate. The B2 type magnetic ordering is established in these films based on the clear observation of the (200) diffraction peak. These ion beam sputtered CFA films possess very small surface roughness of the order of subatomic dimensions (<3 Å) as determined from the fitting of XRR spectra and also by AFM imaging. This is supported by the occurrence of distinct Kiessig fringes spanning over the whole scanning range (~4°) in the x-ray reflectivity (XRR) spectra. The Gilbert damping constant α and effective magnetization 4πMeff are found to vary from 0.0053 ± 0.0002 to 0.0015 ± 0.0001 and 13.45 ± 00.03 kG to 14.03 ± 0.04 kG, respectively. These Co2FeAl films possess saturation magnetization ranging from 4.82 ± 0.09 to 5.22 ± 0.10 μB/f.u. consistent with the bulk L21-type ordering. A record low α-value of 0.0015 is obtained for Co2FeAl films deposited on Si substrate at Ts ~ 573 K. PMID:27357004

  14. Ion-beam mixed ultra-thin cobalt suicide (CoSi2) films by cobalt sputtering and rapid thermal annealing

    NASA Astrophysics Data System (ADS)

    Kal, S.; Kasko, I.; Ryssel, H.

    1995-10-01

    The influence of ion-beam mixing on ultra-thin cobalt silicide (CoSi2) formation was investigated by characterizing the ion-beam mixed and unmixed CoSi2 films. A Ge+ ion-implantation through the Co film prior to silicidation causes an interface mixing of the cobalt film with the silicon substrate and results in improved silicide-to-silicon interface roughness. Rapid thermal annealing was used to form Ge+ ion mixed and unmixed thin CoSi2 layer from 10 nm sputter deposited Co film. The silicide films were characterized by secondary neutral mass spectroscopy, x-ray diffraction, tunneling electron microscopy (TEM), Rutherford backscattering, and sheet resistance measurements. The experi-mental results indicate that the final rapid thermal annealing temperature should not exceed 800°C for thin (<50 nm) CoSi2 preparation. A comparison of the plan-view and cross-section TEM micrographs of the ion-beam mixed and unmixed CoSi2 films reveals that Ge+ ion mixing (45 keV, 1 × 1015 cm-2) produces homogeneous silicide with smooth silicide-to-silicon interface.

  15. Large Area Microcorrals and Cavity Formation on Cantilevers using a Focused Ion Beam

    SciTech Connect

    Saraf, Laxmikant V.; Britt, David W.

    2011-09-14

    We utilize focused ion beam (FIB) to explore various sputtering parameters to form large area microcorrals and cavities on cantilevers. Microcorrals were rapidly created by modifying ion beam blur and overlaps. Modification in FIB sputtering parameters affects the periodicity and shape of corral microstructure. Cantilever deflections show ion beam amorphization effects as a function of sputtered area and cantilever base cavities with or without side walls. The FIB sputtering parameters address a method for rapid creation of a cantilever tensiometer with integrated fluid storage and delivery.

  16. Method for sputtering a PIN microcrystalline/amorphous silicon semiconductor device with the P and N-layers sputtered from boron and phosphorous heavily doped targets

    DOEpatents

    Moustakas, Theodore D.; Maruska, H. Paul

    1985-04-02

    A silicon PIN microcrystalline/amorphous silicon semiconductor device is constructed by the sputtering of N, and P layers of silicon from silicon doped targets and the I layer from an undoped target, and at least one semi-transparent ohmic electrode.

  17. Sputter target

    DOEpatents

    Gates, Willard G.; Hale, Gerald J.

    1980-01-01

    The disclosure relates to an improved sputter target for use in the deposition of hard coatings. An exemplary target is given wherein titanium diboride is brazed to a tantalum backing plate using a gold-palladium-nickel braze alloy.

  18. Initial alignment method for free space optics laser beam

    NASA Astrophysics Data System (ADS)

    Shimada, Yuta; Tashiro, Yuki; Izumi, Kiyotaka; Yoshida, Koichi; Tsujimura, Takeshi

    2016-08-01

    The authors have newly proposed and constructed an active free space optics transmission system. It is equipped with a motor driven laser emitting mechanism and positioning photodiodes, and it transmits a collimated thin laser beam and accurately steers the laser beam direction. It is necessary to introduce the laser beam within sensible range of the receiver in advance of laser beam tracking control. This paper studies an estimation method of laser reaching point for initial laser beam alignment. Distributed photodiodes detect laser luminescence at respective position, and the optical axis of laser beam is analytically presumed based on the Gaussian beam optics. Computer simulation evaluates the accuracy of the proposed estimation methods, and results disclose that the methods help us to guide the laser beam to a distant receiver.

  19. Effects of off-stoichiometry and density on the magnetic and magneto-optical properties of yttrium iron garnet films by magnetron sputtering method

    SciTech Connect

    Yang Qinghui; Zhang Huaiwu; Wen Qiye; Liu Yingli

    2010-10-15

    Yttrium iron garnet films were deposited on Si and Si/CeO{sub 2} substrates by magnetron sputtering method followed by postannealing. By varying the fabrication parameters such as sputtering atmosphere, sputtering power, and annealing atmosphere, single phase garnet films were obtained with different off-stoichiometry and film density. The dependence of cation ratio, magnetic and magneto-optical characteristics, and absorption coefficient were systemically investigated. The results reveal that a proper oxygen pressure in both sputtering and annealing process give rise to a small cation ratio of (Fe{sup 2+} or Fe{sup 4+})/Fe{sup 3+}, thus is beneficial to obtain large saturation magnetization, large Faraday rotation, and small optical absorption. The sputtering power can also affect the properties of the film through changing the film density. Our results indicate that the properties of sputtering deposited yttrium iron garnet (YIG) film can be easily tuned and optimized by modifying the off-stoichiometry and density of the film, thus provides flexibility to fabricate YIG film for extensive applications.

  20. Electron beam directed energy device and methods of using same

    DOEpatents

    Retsky, Michael W.

    2007-10-16

    A method and apparatus is disclosed for an electron beam directed energy device. The device consists of an electron gun with one or more electron beams. The device includes one or more accelerating plates with holes aligned for beam passage. The plates may be flat or preferably shaped to direct each electron beam to exit the electron gun at a predetermined orientation. In one preferred application, the device is located in outer space with individual beams that are directed to focus at a distant target to be used to impact and destroy missiles. The aimings of the separate beams are designed to overcome Coulomb repulsion. A method is also presented for directing the beams to a target considering the variable terrestrial magnetic field. In another preferred application, the electron beam is directed into the ground to produce a subsurface x-ray source to locate and/or destroy buried or otherwise hidden objects including explosive devices.

  1. Properties of nano structured Ag-TiO{sub 2} composite coating on stainless steel using RF sputtering method

    SciTech Connect

    Bakar, S. Abu; Jamuna-Thevi, K.; Abu, N.; Mohd Toff, M. R.

    2012-07-02

    RF Sputtering system is one of the Physical Vapour Deposition (PVD) methods that have been widely used to produce hard coating. This technique is used to deposit thin layers of metallic substrates such as stainless steel (SS). From this process, a good adhesiveness and wear resistance coating can be produced for biomedical applications. In this study, RF sputtering method was used to deposit TiO{sub 2}-Ag composite coatings via various deposition parameters. The parameters are RF power of 350W, gas composition (Ar: O{sub 2}) 50:5 and deposition time at 1, 2, 4 and 6 hours. Scanning Electron Microscopy (SEM), X-Ray Diffraction (XRD) and Raman spectroscopy were used to characterize surface area of coated samples. The formation of nanocrystalline thin film and the surface morphology were examined using SEM. The crystallite size of TiO{sub 2}-Ag composite coatings were estimated between 20-60 nm based on XRD analysis using Scherer equation and SEM evaluation. The Raman and XRD results suggested that the structure of the TiO{sub 2}-Ag consist of anatase and rutile phases. It also showed that the intensity of anatase peaks increased after samples undergone annealing process at 500 Degree-Sign C.

  2. Work Function Modification of Tungsten-Doped Indium Oxides Deposited by the Co-Sputtering Method.

    PubMed

    Oh, Gyujin; Jeon, Jia; Lee, Kyoung Su; Kim, Eun Kyu

    2016-05-01

    We have studied the work function modification of tungsten-doped indium oxides (IWOs) through the co-sputtering of indium oxide (In2O3) and indium tungsten oxide (In2O3 80 wt% + WO3 20 wt%) via a radio frequency (RF) magnetron sputtering system. By controlling the elemental deposition of IWOs, the resultant work functions varied from 4.37 eV to 4.1 eV. The IWO thin films showed excellent properties for application as transparent conducting oxide materials in the region of 0 to 2.43 at.% of tungsten versus the total metal content. The carrier concentration of n-type IWO thin films varied from 8.39 x 10(19) cm(-3) to 8.58 x 10(21) cm(-3), while the resistivity varied from 3.15 x 10(-4) Ωcm to 2.26 x 10(-3) Ωcm. The largest measured optical band gap was 3.82 eV determined at 2.43 at.% of tungsten atoms relative to the total amount of metal atoms, while the smallest optical band gap was 3.6 eV at 4.78 at.% of tungsten. IWO films containing more than 2.43 at.% of tungsten atoms relative to the total number of metal atoms revealed an average transmittance of over 80% within the visible light region.

  3. Work Function Modification of Tungsten-Doped Indium Oxides Deposited by the Co-Sputtering Method.

    PubMed

    Oh, Gyujin; Jeon, Jia; Lee, Kyoung Su; Kim, Eun Kyu

    2016-05-01

    We have studied the work function modification of tungsten-doped indium oxides (IWOs) through the co-sputtering of indium oxide (In2O3) and indium tungsten oxide (In2O3 80 wt% + WO3 20 wt%) via a radio frequency (RF) magnetron sputtering system. By controlling the elemental deposition of IWOs, the resultant work functions varied from 4.37 eV to 4.1 eV. The IWO thin films showed excellent properties for application as transparent conducting oxide materials in the region of 0 to 2.43 at.% of tungsten versus the total metal content. The carrier concentration of n-type IWO thin films varied from 8.39 x 10(19) cm(-3) to 8.58 x 10(21) cm(-3), while the resistivity varied from 3.15 x 10(-4) Ωcm to 2.26 x 10(-3) Ωcm. The largest measured optical band gap was 3.82 eV determined at 2.43 at.% of tungsten atoms relative to the total amount of metal atoms, while the smallest optical band gap was 3.6 eV at 4.78 at.% of tungsten. IWO films containing more than 2.43 at.% of tungsten atoms relative to the total number of metal atoms revealed an average transmittance of over 80% within the visible light region. PMID:27483882

  4. Magnetron sputtered boron films

    DOEpatents

    Makowiecki, Daniel M.; Jankowski, Alan F.

    1998-01-01

    A method is described for the production of thin boron and titanium/boron films by magnetron sputter deposition. The amorphous boron films contain no morphological growth features, unlike those found when thin films are prepared by various physical vapor deposition processes. Magnetron sputter deposition method requires the use of a high density crystalline boron sputter target which is prepared by hot isostatic pressing. Thin boron films prepared by this method are useful for producing hardened surfaces, surfacing machine tools, etc. and for ultra-thin band pass filters as well as the low Z element in low Z/high Z optical components, such as mirrors which enhance reflectivity from grazing to normal incidence.

  5. Magnetron sputtered boron films

    DOEpatents

    Makowiecki, D.M.; Jankowski, A.F.

    1998-06-16

    A method is described for the production of thin boron and titanium/boron films by magnetron sputter deposition. The amorphous boron films contain no morphological growth features, unlike those found when thin films are prepared by various physical vapor deposition processes. Magnetron sputter deposition method requires the use of a high density crystalline boron sputter target which is prepared by hot isostatic pressing. Thin boron films prepared by this method are useful for producing hardened surfaces, surfacing machine tools, etc. and for ultra-thin band pass filters as well as the low Z element in low Z/high Z optical components, such as mirrors which enhance reflectivity from grazing to normal incidence. 8 figs.

  6. High power pulsed magnetron sputtering: A method to increase deposition rate

    SciTech Connect

    Raman, Priya McLain, Jake; Ruzic, David N; Shchelkanov, Ivan A.

    2015-05-15

    High power pulsed magnetron sputtering (HPPMS) is a state-of-the-art physical vapor deposition technique with several industrial applications. One of the main disadvantages of this process is its low deposition rate. In this work, the authors report a new magnetic field configuration, which produces deposition rates twice that of conventional magnetron's dipole magnetic field configuration. Three different magnet pack configurations are discussed in this paper, and an optimized magnet pack configuration for HPPMS that leads to a higher deposition rate and nearly full-face target erosion is presented. The discussed magnetic field produced by a specially designed magnet assembly is of the same size as the conventional magnet assembly and requires no external fields. Comparison of deposition rates with different power supplies and the electron trapping efficiency in complex magnetic field arrangements are discussed.

  7. Perpendicular magnetic anisotropy of Mn4N films fabricated by reactive sputtering method

    NASA Astrophysics Data System (ADS)

    Kabara, Kazuki; Tsunoda, Masakiyo

    2015-05-01

    Manganese nitride films were fabricated on MgO substrates by changing N2 flow ratio into Ar gas ( P N2 ) during reactive sputtering deposition of the films, and their crystal structures and magnetic properties were investigated. Single phased ɛ-Mn4N films were obtained when P N2 was 5%-9%, and the tetragonal lattice distortion was identified in all the Mn4N films (the lattice constant ratio, c/a = 0.99). Perpendicular magnetic anisotropy was observed in all the specimens. The Mn4N film, fabricated with P N2 = 8%, has a low saturation magnetization (Ms = 110 emu/cc) and relatively high magnetic anisotropic energy (Ku = 8.8 × 105 erg/cc). Both Ms and Ku of the films drastically changed with mixing other phases (α-Mn, β-Mn, η-Mn3N2, and possibly γ-Mn) by varying P N2 .

  8. Shielded beam delivery apparatus and method

    DOEpatents

    Hershcovitch, Ady; Montano, Rory Dominick

    2006-07-11

    An apparatus includes a plasma generator aligned with a beam generator for producing a plasma to shield an energized beam. An electrode is coaxially aligned with the plasma generator and followed in turn by a vortex generator coaxially aligned with the electrode. A target is spaced from the vortex generator inside a fluid environment. The electrode is electrically biased relative to the electrically grounded target for driving the plasma toward the target inside a vortex shield.

  9. Sputter metalization of Wolter type optical elements

    NASA Technical Reports Server (NTRS)

    Ledger, A. M.

    1977-01-01

    An analytical task showed that the coating thickness distribution for both internal and external optical elements coated using either electron beam or sputter sources can be made uniform and will not affect the surface figure of coated elements. Also, sputtered samples of nickel, molybdenum, iridium and ruthenium deposited onto both hot and cold substrates showed excellent adhesion.

  10. Effect of MgO spacer and annealing on interface and magnetic properties of ion beam sputtered NiFe/Mg/MgO/CoFe layer structures

    SciTech Connect

    Bhusan Singh, Braj; Chaudhary, Sujeet

    2012-09-15

    The effect of variation in the thickness of ion assisted ion beam sputtered MgO spacer layer deposited at oxygen ion assisted energy of 50 eV on the extent of magnetic coupling of NiFe and CoFe layers in Si/NiFe(10 nm)/Mg(1 nm)/MgO(2,4,6 nm)/CoFe(10 nm) sandwich structure is investigated. At MgO spacer layer thickness of 4 nm, the separate reversal of magnetizations of the two ferromagnetic layers is observed in the hystresis loop recorded along easy direction. This results in a 3.5 Oe wide plateau like region during magnetization reversal, which became 4.5 Oe at 6 nm thin MgO. At 2 nm thin MgO, the absence of plateau during magnetization reversal region revealed ferromagnetic coupling between the two ferromagnetic layers, which is understood to arise due to the growth of very thin and low density (1.22 gm/cc) MgO spacer layer, indicating the presence of pinholes as revealed by x-ray reflectometry. After vaccum annealing (200 Degree-Sign C/1 h), the plateau region for 4 and 6 nm thin MgO case decreased to 1.5 Oe and 2.0 Oe, respectively, due to enhanced interface roughness/mixing. In addition, an enhancement of the in-plane magnetic anisotropy is also observed.

  11. Identification and roles of nonstoichiometric oxygen in amorphous Ta2O5 thin films deposited by electron beam and sputtering processes

    NASA Astrophysics Data System (ADS)

    Mannequin, Cedric; Tsuruoka, Tohru; Hasegawa, Tsuyoshi; Aono, Masakazu

    2016-11-01

    The morphology and composition of tantalum oxide (Ta2O5) thin films prepared by electron-beam (EB) evaporation and radio-frequency sputtering (SP) were investigated by grazing incidence X-ray diffraction (GIXRD), X-ray reflectometry (XRR), atomic force microscopy, Fourier transformed infrared spectroscopy (FTIR), and X-ray photoelectron spectroscopy (XPS). GIXRD revealed an amorphous nature for both films, and XRR showed that the density of the Ta2O5-EB films was lower than that of the Ta2O5-SP films; both films have lower density than the bulk value. A larger amount of molecular water and peroxo species were detected for the Ta2O5-EB films by FTIR performed in ambient atmosphere. XPS analyses performed in vacuum confirmed the presence of hydroxyl groups, but no trace of chemisorbed molecular water was detected. In addition, a higher oxygen nonstoichiometry (higher O/Ta ratio) was found for the EB films. From these results, we conclude that the oxygen nonstoichiometry of the EB film accounted for its lower density and higher amount of absorbed molecular water. The results also suggest the importance of understanding the dependence of the structural and chemical properties of thin amorphous oxide films on the deposition process.

  12. Low temperature growth of Co{sub 2}MnSi films on diamond semiconductors by ion-beam assisted sputtering

    SciTech Connect

    Nishiwaki, M.; Ueda, K. Asano, H.

    2015-05-07

    High quality Schottky junctions using Co{sub 2}MnSi/diamond heterostructures were fabricated. Low temperature growth at ∼300–400 °C by using ion-beam assisted sputtering (IBAS) was necessary to obtain abrupt Co{sub 2}MnSi/diamond interfaces. Only the Co{sub 2}MnSi films formed at ∼300–400 °C showed both saturation magnetization comparable to the bulk values and large negative anisotropic magnetoresistance, which suggests half-metallic nature of the Co{sub 2}MnSi films, of ∼0.3% at 10 K. Schottky junctions formed using the Co{sub 2}MnSi films showed clear rectification properties with rectification ratio of more than 10{sup 7} with Schottky barrier heights of ∼0.8 eV and ideality factors (n) of ∼1.2. These results indicate that Co{sub 2}MnSi films formed at ∼300–400 °C by IBAS are a promising spin source for spin injection into diamond semiconductors.

  13. Center wavelength shift dependence on substrate coefficient of thermal expansion for optical thin-film interference filters deposited by ion-beam sputtering.

    PubMed

    Brown, Jeffrey T

    2004-08-10

    Single-layer films of Ta2O5 and multilayer thin-film filters of Ta2O5 and SiO2 were deposited by ion-beam-sputter deposition. Postdeposition annealing of the structures resulted in increased optical thickness of the films, resulting in an upward shift in the wavelength of the transmission-reflection spectra. Modeling of the single-layer films by means of the effective media approximation indicates an increase in the void fraction of the film after annealing. This increase is consistent with an observed decrease in refractive index and an increase in physical film thickness. The multilayer structures, deposited on substrates of varying coefficient of thermal expansion (CTE), were annealed at various temperatures, and the change in the center wavelength was measured. The measured change is dependent on the annealing temperature and the substrate CTE, indicating that the increase in the void fraction is caused in part by thermally induced stress during the annealing process. A simple model is proposed that relates the void fraction present in the films after annealing with the substrate CTE and the annealing temperature.

  14. Inelastic tunneling conductance and magnetoresistance investigations in dual ion-beam sputtered CoFeB(110)/MgO/CoFeB (110) magnetic tunnel junctions

    SciTech Connect

    Bhusan Singh, Braj; Chaudhary, Sujeet

    2014-04-21

    Magnetic tunnel junctions (MTJs) comprising Ta(5)/NiFe(5)/IrMn(15)/CoFeB(5)/Mg(1)/MgO(3.5)/ CoFeB(5)/Ta(5)/Ag(20) (thickness in nm) with (110) oriented CoFeB layers are grown using dual ion beam sputtering. The tunnel magnetoresistance (TMR) of MTJs is found to be significantly bias dependent and exhibits zero bias anomaly (ZBA) which is attributed to the presence of magnetic impurities or diffusion of Mn from antiferromagnetic IrMn in the barrier. Adjacent to the ZBA, two peaks at 24 ± 3 mV and 34 ± 3 mV are also observed, which differ both in intensity as well as their position in the antiparallel and parallel magnetic states, suggesting that they are due to magnon excitations. In addition to this, a phonon peak at 65 ± 3 mV is also observed. The effect of temperature on the inelastic and elastic tunneling contributions is studied in detail in 25–300 K range using the Glazman and Matveev model. Ten series of localized states are found to be involved in hopping conduction in the forbidden gap of MgO barrier. The effect of presence of such inelastic channels is found to be insignificant at low temperatures yielding sizeable enhancement in TMR.

  15. The effect of substrate bias voltages on impact resistance of CrAlN coatings deposited by modified ion beam enhanced magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Chunyan, Yu; Linhai, Tian; Yinghui, Wei; Shebin, Wang; Tianbao, Li; Bingshe, Xu

    2009-01-01

    CrAlN coatings were deposited on silicon and AISI H13 steel substrates using a modified ion beam enhanced magnetron sputtering system. The effect of substrate negative bias voltages on the impact property of the CrAlN coatings was studied. The X-ray diffraction (XRD) data show that all CrAlN coatings were crystallized in the cubic NaCl B1 structure, with the (1 1 1), (2 0 0) (2 2 0) and (2 2 2) diffraction peaks observed. Two-dimensional surface morphologies of CrAlN coatings were investigated by atomic force microscope (AFM). The results show that with increasing substrate bias voltage the coatings became more compact and denser, and the microhardness and fracture toughness of the coatings increased correspondingly. In the dynamic impact resistance tests, the CrAlN coatings displayed better impact resistance with the increase of bias voltage, due to the reduced emergence and propagation of the cracks in coatings with a very dense structure and the increase of hardness and fracture toughness in coatings.

  16. Ion Beam Analysis, structure and corrosion studies of nc-TiN/a-Si3N4 nanocomposite coatings deposited by sputtering on AISI 316L

    NASA Astrophysics Data System (ADS)

    García, J.; Canto, C. E.; Flores, M.; Andrade, E.; Rodríguez, E.; Jiménez, O.; Solis, C.; de Lucio, O. G.; Rocha, M. F.

    2014-07-01

    In this work, nanocomposite coatings of nc-TiN/a-Si3N4, were deposited on AISI 316L stainless steel substrate by a DC and RF reactive magnetron co-sputtering technique using an A-N2 plasma. The structure of the coatings was characterized by means of XRD (X-ray Diffraction). The substrate and coating corrosion resistance were evaluated by potentiodynamic polarization using a Ringer solution as electrolyte. Corrosion tests were conducted with the purpose to evaluate the potential of this coating to be used on biomedical alloys. IBA (Ion Beam Analysis) techniques were applied to measure the elemental composition profiles of the films and, XPS (X-ray Photoelectron Spectroscopy) were used as a complementary technique to obtain information about the compounds present in the films. The nanocomposite coatings of nc-TiN/a-Si3N4 show crystalline (TiN) and amorphous (Si3N4) phases which confer a better protection against the corrosion effects compared with that of the AISI 316L.

  17. Atom penetration from a thin film into the substrate during sputtering by polyenergetic Ar{sup +} ion beam with mean energy of 9.4 keV

    SciTech Connect

    Kalin, B.A.; Gladkov, V.P.; Volkov, N.V.; Sabo, S.E.

    1995-12-31

    Penetration of alien atoms (Be, Ni) into Be, Al, Zr, Si and diamond was investigated under Ar{sup +} ion bombardment of samples having thermally evaporated films of 30--50 nm. Sputtering was carried out using a wide energy spectrum beam of Ar{sup +} ions of 9.4 keV to dose D = 1 {times} 10{sup 16}--10{sup 19} ion/cm{sup 2}. Implanted atom distribution in the targets was measured by Rutherford backscattering spectrometry (RBS) of H{sup +} and He{sup +} ions with energy of 1.6 MeV as well as secondary ion mass-spectrometry (SIMS). During the bombardment, the penetration depth of Ar atoms increases with dose linearly. This depth is more than 3--20 times deeper than the projected range of bombarding ions and recoil atoms. This is a deep action effect. The analysis shows that the experimental data for foreign atoms penetration depth are similar to the data calculated for atom migration through the interstitial site in a field of internal (lateral) compressive stresses created in the near-surface layer of the substrate as a result of implantation. Under these experimental conditions atom ratio r{sub i}/r{sub m} (r{sub i} -- radius of dopant, r{sub m} -- radius target of substrate) can play a principal determining role.

  18. Non-selenization method using sputtering deposition with a CuSe2 target for CIGS thin film

    NASA Astrophysics Data System (ADS)

    Kim, Nam-Hoon; Oh, Seongha; Lee, Woo-Sun

    2012-10-01

    A novel method is proposed to prepare polycrystalline Cu(In,Ga)Se2 (CIGS) thin films by using a non-selenization method and a sputtering process with In, Ga and CuSe2 alloy targets. An annealing process in a furnace and rapid thermal annealing (RTA) at 400 °C without any selenium-/sulfurcontaining gas formed CIGS chalcopyrite (112), (220)/(204), and (312)/(116) phases. The major electrical and optical properties of the annealed thin films were superior to the required or reported values with 2.33 × 103 S/cm conductivity, 4.43 × 1020 cm-3 carrier concentration, 34.30 cm2/Vs hole mobility, and 2.41 × 106 cm-1 absorption coefficient.

  19. [Beam hardening correction method for X-ray computed tomography based on subsection beam hardening curves].

    PubMed

    Huang, Kui-dong; Zhang, Ding-hua

    2009-09-01

    After researching the forming principle of X-ray beam hardening and analyzing the usual methods of beam hardening correction, a beam hardening correction model was established, in which the independent variable was the projection gray, and so the computing difficulties in beam hardening correction can be reduced. By considering the advantage and disadvantage of fitting beam hardening curve to polynomial, a new expression method of the subsection beam hardening curves based on polynomial was proposed. In the method, the beam hardening data were fitted firstly to a polynomial curve which traverses the coordinate origin, then whether the got polynomial curve surged in the fore-part or back-part of the fitting range was judged based on the polynomial curvature change. If the polynomial fitting curve surged, the power function curve was applied to replace the surging parts of the polynomial curve, and the C1 continuity was ensured at the joints of the segment curves. The experimental results of computed tomography (CT) simulation show that the method is well stable in the beam hardening correction for the ideal CT images and CT images with added noises, and can mostly remove the beam hardening artifact at the same time.

  20. Systems and methods of varying charged particle beam spot size

    SciTech Connect

    Chen, Yu-Jiuan

    2014-09-02

    Methods and devices enable shaping of a charged particle beam. A modified dielectric wall accelerator includes a high gradient lens section and a main section. The high gradient lens section can be dynamically adjusted to establish the desired electric fields to minimize undesirable transverse defocusing fields at the entrance to the dielectric wall accelerator. Once a baseline setting with desirable output beam characteristic is established, the output beam can be dynamically modified to vary the output beam characteristics. The output beam can be modified by slightly adjusting the electric fields established across different sections of the modified dielectric wall accelerator. Additional control over the shape of the output beam can be excreted by introducing intentional timing de-synchronization offsets and producing an injected beam that is not fully matched to the entrance of the modified dielectric accelerator.

  1. Nanoripple formation on GaAs (001) surface by reverse epitaxy during ion beam sputtering at elevated temperature

    NASA Astrophysics Data System (ADS)

    Chowdhury, Debasree; Ghose, Debabrata

    2016-11-01

    Self-organized pattern formation by the process of reverse epitaxial growth has been investigated on GaAs (001) surfaces during 1 keV Ar+ bombardment at target temperature of 450 °C for a wide range of incident angles. Highly ordered ripple formation driven by diffusion instability is evidenced at near normal incidence angles. Concurrent sample rotation shows that the ripple morphology and its orientation do not depend on the incident beam direction; rather they are determined by the symmetry of the crystal face.

  2. The effect of deposition RF power on the SiC passivation layer synthesized by an RF magnetron sputtering method

    NASA Astrophysics Data System (ADS)

    Keun Seo, Jae; Ko, Ki-han; Seok Choi, Won; Park, Mungi; Hwan Lee, Jong; Yi, Jun-Sin

    2011-07-01

    In this paper, we investigated the amorphous silicon carbide (a-SiC) film as an alternative material to silicon nitride (SiN) and silicon oxide (SiO 2) for the passivation layer of solar cells. The a-SiC films were deposited on the p-type silicon (1 0 0) and glass substrates by a RF magnetron sputtering method using a-SiC (99%) target. We investigated the properties according to the deposition RF power (150, 200, 250 and 300 W). The optical properties were investigated by UV-visible spectroscopy and an ellipsometer. The performance of SiC passivation layer was investigated by carrier lifetime measurement. We could obtain the lowest refractive index of 3.22 and the carrier lifetime was the highest, 7 μs at the deposition RF power of 150 W.

  3. Self-catalyzed carbon plasma-assisted growth of tin-doped indium oxide nanostructures by the sputtering method

    NASA Astrophysics Data System (ADS)

    Setti, Grazielle O.; de Jesus, Dosil P.; Joanni, Ednan

    2016-10-01

    In this work a new strategy for growth of nanostructured indium tin oxide (ITO) by RF sputtering is presented. ITO is deposited in the presence of a carbon plasma which reacts with the free oxygen atoms during the deposition, forming species like CO x . These species are removed from the chamber by the pumping system, and one-dimensional ITO nanostructures are formed without the need for a seed layer. Different values of substrate temperature and power applied to the gun containing the carbon target were investigated, resulting in different nanostructure morphologies. The samples containing a higher density of nanowires were covered with gold and evaluated as surface-enhanced Raman scattering substrates for detection of dye solutions. The concept might be applied to other oxides, providing a simple method for unidimensional nanostructural synthesis.

  4. Evaluation of left ventricular assist device pump bladders cast from ion-sputtered polytetrafluorethylene mandrels

    NASA Technical Reports Server (NTRS)

    1982-01-01

    A highly thromboresistant blood contacting interface for use in implanatable blood pump is investigated. Biomaterials mechanics, dynamics, durability, surface morphology, and chemistry are among the critical consideration pertinent to the choice of an appropriate blood pump bladder material. The use of transfer cast biopolymers from ion beam textured surfaces is investigated to detect subtle variations in blood pump surface morphology using Biomer as the biomaterial of choice. The efficacy of ion beam sputtering as an acceptable method of fabricating textured blood interfaces is evaluated. Aortic grafts and left ventricular assist devices were implanted in claves; the blood interfaces were fabricated by transfer casting methods from ion beam textured polytetrafluorethylene mandrels. The mandrels were textured by superimposing a 15 micron screen mesh; ion sputtering conditions were 300 volts beam energy, 40 to 50 mA beam, and a mandrel to source distance of 25 microns.

  5. Direct comparative study on the energy level alignments in unoccupied/occupied states of organic semiconductor/electrode interface by constructing in-situ photoemission spectroscopy and Ar gas cluster ion beam sputtering integrated analysis system

    SciTech Connect

    Yun, Dong-Jin Chung, JaeGwan; Kim, Yongsu; Park, Sung-Hoon; Kim, Seong-Heon; Heo, Sung

    2014-10-21

    Through the installation of electron gun and photon detector, an in-situ photoemission and damage-free sputtering integrated analysis system is completely constructed. Therefore, this system enables to accurately characterize the energy level alignments including unoccupied/occupied molecular orbital (LUMO/HOMO) levels at interface region of organic semiconductor/electrode according to depth position. Based on Ultraviolet Photoemission Spectroscopy (UPS), Inverse Photoemission Spectroscopy (IPES), and reflective electron energy loss spectroscopy, the occupied/unoccupied state of in-situ deposited Tris[4-(carbazol-9-yl)phenyl]amine (TCTA) organic semiconductors on Au (E{sub LUMO}: 2.51 eV and E{sub HOMO}: 1.35 eV) and Ti (E{sub LUMO}: 2.19 eV and E{sub HOMO}: 1.69 eV) electrodes are investigated, and the variation of energy level alignments according to work function of electrode (Au: 4.81 eV and Ti: 4.19 eV) is clearly verified. Subsequently, under the same analysis condition, the unoccupied/occupied states at bulk region of TCTA/Au structures are characterized using different Ar gas cluster ion beam (Ar GCIB) and Ar ion sputtering processes, respectively. While the Ar ion sputtering process critically distorts both occupied and unoccupied states in UPS/IPES spectra, the Ar GCIB sputtering process does not give rise to damage on them. Therefore, we clearly confirm that the in-situ photoemission spectroscopy in combination with Ar GCIB sputtering allows of investigating accurate energy level alignments at bulk/interface region as well as surface region of organic semiconductor/electrode structure.

  6. Effect of film thickness on the magneto-structural properties of ion beam sputtered transition metal–metalloid FeCoNbB/Si (100) alloy thin films

    NASA Astrophysics Data System (ADS)

    Gupta, Pooja; Tripathi, Yagyanidhi; Kumar, Dileep; Rai, S. K.; Gupta, Mukul; Reddy, V. R.; Svec, Peter

    2016-08-01

    The structure and magnetic properties of ion beam sputtered transition metal–metalloid FeCoNbB/Si(100) alloy thin film have been studied as a function of film thickness using complementary techniques of x-ray reflectivity (XRR), grazing incidence x-ray diffraction, and magneto optical Kerr effect. Thicknesses of the films range from ∼200 to 1500 Å. The coercivity of all the films ranges between 4 and 14 Oe, which suggests soft magnetic nature of FeCoNbB/Si thin films. Films with thickness up to 800 Å are amorphous in nature and are found to possess uniaxial magnetic anisotropy in the film plane, although no magnetic field was applied during deposition. The presence of the two fold symmetry in such amorphous thin films may be attributed to quenched-in stresses developed during deposition. Upon increasing the film thickness to ∼1200 Å and above, the structure of FeCoNbB films transforms from amorphous to partially nanocrystalline structure and has bcc-FeCo nanocrystalline phase dispersed in remaining amorphous matrix. The crystalline volume fraction (cvf) of the films is found to be proportional to the film thickness. Azimuthal angle dependence of remanence confirms the presence of in-plane four-fold anisotropy (FFA) in the crystalline film with cvf ∼75%. Synchrotron x-ray diffraction measurement using area detector suggests random orientation of crystallites and thus clearly establishes that FFA is not related to texture/cubic symmetry in such polycrystalline thin films. As supported by asymmetric Bragg diffraction measurements, the origin of FFA in such partially crystalline thin film is ascribed to the additional compressive stresses developed in the film upon crystallization. Results indicate that promising soft magnetic properties in such films can be optimized by controlling the film thickness. The revelation of controllable and tunable anisotropy suggests that FeCoNbB thin films can have potential application in electromagnetic applications.

  7. p-type conduction from Sb-doped ZnO thin films grown by dual ion beam sputtering in the absence of oxygen ambient

    SciTech Connect

    Kumar Pandey, Sushil; Kumar Pandey, Saurabh; Awasthi, Vishnu; Kumar, Ashish; Mukherjee, Shaibal; Deshpande, Uday P.; Gupta, Mukul

    2013-10-28

    Sb-doped ZnO (SZO) thin films were deposited on c-plane sapphire substrates by dual ion beam sputtering deposition system in the absence of oxygen ambient. The electrical, structural, morphological, and elemental properties of SZO thin films were studied for films grown at different substrate temperatures ranging from 200 °C to 600 °C and then annealed in situ at 800 °C under vacuum (pressure ∼5 × 10{sup −8} mbar). Films grown for temperature range of 200–500 °C showed p-type conduction with hole concentration of 1.374 × 10{sup 16} to 5.538 × 10{sup 16} cm{sup −3}, resistivity of 66.733–12.758 Ω cm, and carrier mobility of 4.964–8.846 cm{sup 2} V{sup −1} s{sup −1} at room temperature. However, the film grown at 600 °C showed n-type behavior. Additionally, current-voltage (I–V) characteristic of p-ZnO/n-Si heterojunction showed a diode-like behavior, and that further confirmed the p-type conduction in ZnO by Sb doping. X-ray diffraction measurements showed that all SZO films had (002) preferred crystal orientation. X-ray photoelectron spectroscopy analysis confirmed the formation of Sb{sub Zn}–2V{sub Zn} complex caused acceptor-like behavior in SZO films.

  8. Epitaxial Bi3Fe5O12(001) films grown by pulsed laser deposition and reactive ion beam sputtering techniques

    NASA Astrophysics Data System (ADS)

    Adachi, N.; Denysenkov, V. P.; Khartsev, S. I.; Grishin, A. M.; Okuda, T.

    2000-09-01

    We report on processing and comparative characterization of epitaxial Bi3Fe5O12 (BIG) films grown onto Gd3(ScGa)5O12[GSGG,(001)] single crystal using pulsed laser deposition (PLD) and reactive ion beam sputtering (RIBS) techniques. A very high deposition rate of about 0.8 μm/h has been achieved in the PLD process. Comprehensive x-ray diffraction analyses reveal epitaxial quality both of the films: they are single phase, exclusively (001) oriented, the full width at half maximum of the rocking curve of (004) Bragg reflection is 0.06 deg for PLD and 0.05 deg for RIBS film, strongly in-plane textured with cube-on-cube film-to-substrate epitaxial relationship. Saturation magnetization 4πMs and Faraday rotation at 635 nm were found to be 1400 Gs and -7.8 deg/μm in PLD-BIG, and 1200 Gs and -6.9 deg/μm in RIBS-BIG. Ferromagnetic resonance (FMR) measurements performed at 9.25 GHz yielded the gyromagnetic ratio γ=1.797×107l/s Oe, 1.826×107 l/s Oe; the constants of uniaxial magnetic anisotropy were Ku*=-8.66×104erg/cm3, -8.60×104 erg/cm3; the cubic magnetic anisotropy K1=-2.7×103 erg/cm3,-3.8×103 erg/cm3; and the FMR linewidth ΔH=25 and 34 Oe for PLD and RIBS films correspondingly. High Faraday rotation, low microwave loss, and low coercive field ⩽40 Oe of BIG/GSGG(001) films promise their use in integrated magneto-optic applications.

  9. Method of enhancing cyclotron beam intensity

    DOEpatents

    Hudson, Ed D.; Mallory, Merrit L.

    1977-01-01

    When an easily ionized support gas such as xenon is added to the cold cathode in sources of the Oak Ridge Isochronous Cyclotron, large beam enhancements are produced. For example, .sup.20 Ne.sup.7+ is increased from 0.05 enA to 27 enA, and .sup.16 O.sup.5+ intensities in excess of 35 e.mu.A have been extracted for periods up to 30 minutes. Approximately 0.15 cc/min of the easily ionized support gas is supplied to the ion source through a separate gas feed line and the primary gas flow is reduced by about 30%.

  10. Innovative real-time and non-destructive method of beam profile measurement under large beam current irradiation for BNCT

    NASA Astrophysics Data System (ADS)

    Takada, M.; Kamada, S.; Suda, M.; Fujii, R.; Nakamura, M.; Hoshi, M.; Sato, H.; Endo, S.; Hamano, T.; Arai, S.; Higashimata, A.

    2012-10-01

    We developed a real-time and non-destructive method of beam profile measurement on a target under large beam current irradiation, and without any complex radiation detectors or electrical circuits. We measured the beam profiles on a target by observing the target temperature using an infrared-radiation thermometer camera. The target temperatures were increased and decreased quickly by starting and stopping the beam irradiation within 1 s in response speed. Our method could trace beam movements rapidly. The beam size and position were calibrated by measuring O-ring heat on the target. Our method has the potential to measure beam profiles at beam current over 1 mA for proton and deuteron with the energy around 3 MeV and allows accelerator operators to adjust the beam location during beam irradiation experiments without decreasing the beam current.

  11. Fatigue Testing of Wing Beam by the Resonance Method

    NASA Technical Reports Server (NTRS)

    Bleakney, William M

    1938-01-01

    Preliminary fatigue tests on two aluminum-alloy wing-beam specimens subjected to reversed axial loading are described. The motion used consists in incorporating one or two reciprocating motors in a resonance system of which the specimen is the spring element. A description is given of the reciprocating motors, and of the method of assembling and adjusting the vibrating system. The results indicate that the method is well adapted to fatigue tests of not only uniform wing beams but also wing beams with asymmetrical local reinforcements.

  12. Comparison of ZnO thin films grown on a polycrystalline 3C-SiC buffer layer by RF magnetron sputtering and a sol-gel method

    NASA Astrophysics Data System (ADS)

    Phan, Duy-Thach; Chung, Gwiy-Sang

    2011-02-01

    Zinc oxide (ZnO) thin films were deposited on a polycrystalline (poly) 3C-SiC buffer layer using RF magnetron sputtering and a sol-gel method. The post-deposition annealing was performed on ZnO thin films prepared using both methods. The formation of ZnO piezoelectric thin films with less residual stress was due to a close lattice mismatch of the ZnO and SiC layers as obtained by the sputtering method. Nanocrystalline, porous ZnO film prepared using the sol-gel method showed strong ultraviolet UV emission at a wavelength of 380 nm. The 3C-SiC buffer layer improved the optical and piezoelectric properties of the ZnO film produced by the two deposition methods. Moreover, the different structures of the ZnO films on the 3C-SiC intermediate layer caused by the different deposition techniques were also considered and discussed.

  13. Accurate Method for Determining Adhesion of Cantilever Beams

    SciTech Connect

    Michalske, T.A.; de Boer, M.P.

    1999-01-08

    Using surface micromachined samples, we demonstrate the accurate measurement of cantilever beam adhesion by using test structures which are adhered over long attachment lengths. We show that this configuration has a deep energy well, such that a fracture equilibrium is easily reached. When compared to the commonly used method of determining the shortest attached beam, the present method is much less sensitive to variations in surface topography or to details of capillary drying.

  14. Fabrication of highly (110)-oriented BaCeO3-based proton-conductive oxide thin films by RF magnetron sputtering method

    NASA Astrophysics Data System (ADS)

    Sato, Tomoya; Inoue, Takaaki; Ichinose, Daichi; Funakubo, Hiroshi; Uchiyama, Kiyoshi

    2016-02-01

    A proton-conductive BaCe0.9Y0.1O3-δ (BCYO) thin-film, one of the candidates for the electrolyte of intermediate-temperature solid oxide fuel cells (IT-SOFCs), was deposited on (111)Pt/TiO2/SiO2/(100)Si substrate by the RF magnetron sputtering method. The sputtering conditions, i.e., deposition temperature, pressure, and sputtering gases, were examined to improve the crystallinity of the films. The BCYO films deposited at more than 500 °C were well crystallized and showed only 110 diffraction. The addition of O2 into the sputtering gas causes adverse results of lower crystallinity and lower deposition rates. A wide-range XRD reciprocal space mapping also revealed that the (110)-oriented BCYO films can be obtained on (111)Pt/TiO2/SiO2/(100)Si substrates without the need to use any buffer layers. We consider that this BCYO film possibly shows high proton conductivity and may be a suitable material for the SOFC electrolyte because of its high crystallinity.

  15. New method of beam bunching in free-ion lasers

    SciTech Connect

    Bessonov, E.G.

    1995-12-31

    An effective ion beam bunching method is suggested. This method is based on a selective interaction of line spectrum laser light (e.g. axial mode structure light) with non-fully stripped ion beam cooled in a storage rings, arranging the ion beam in layers in radial direction of an energy-longitudinal coordinate plane and following rotation of the beam at the right angle after switching on the RF cavity or undulator grouper/buncher. Laser cooling of the ion beam can be used at this position after switching off the resonator to decrease the energy spread caused by accelerating field of the resonator. A relativistic multilayer ion mirror will be produced this way. Both monochromatic laser beams and intermediate monochromaticity and bandwidth light sources of spontaneous incoherent radiation can be used for production of hard and high power electromagnetic radiation by reflection from this mirror. The reflectivity of the mirror is rather high because of the cross-section of the backward Rayleigh scattering of photon light by non-fully stripped relativistic ions ({approximately}{lambda}{sup 2}) is much greater ({approximately} 10{divided_by}15 orders) then Thompson one ({approximately} r{sub e}{sup 2}). This position is valid even in the case of non-monochromatic laser light ({Delta}{omega}/{omega} {approximately} 10{sup -4}). Ion cooling both in longitudinal plane and three-dimensional radiation ion cooling had been proposed based on this observation. The using of these cooling techniques will permit to store high current and low emittance relativistic ion beams in storage rings. The bunched ion beam can be used in ordinary Free-Ion Lasers as well. After bunching the ion beam can be extracted from the storage ring in this case. Storage rings with zero momentum compaction function will permit to keep bunching of the ion beam for a long time.

  16. Three-dimensional magnetic field analyses on the magnetron sputtering system by using Free Mesh Method

    NASA Astrophysics Data System (ADS)

    Ido, Shunji; Hirose, Ryusuke

    2001-12-01

    A code using the 3-dimensional Finite Element Method (FEM) and Free Mesh Method (FMM) has been developed and applied to the magnetic field analyses in the plasma devices, where a ferromagnetic material is used as a target. An adaptive method is applied to the re-distribution of the nodes. It is shown that this method is useful in the magnetic field analyses.

  17. Ion-beam technologies

    SciTech Connect

    Fenske, G.R.

    1993-01-01

    This compilation of figures and diagrams reviews processes for depositing diamond/diamond-like carbon films. Processes addressed are chemical vapor deposition (HFCVD, PACVD, etc.), plasma vapor deposition (plasma sputtering, ion beam sputtering, evaporation, etc.), low-energy ion implantation, and hybrid processes (biased sputtering, IBAD, biased HFCVD, etc.). The tribological performance of coatings produced by different means is discussed.

  18. Gaussian beam profile shaping apparatus, method therefor and evaluation thereof

    DOEpatents

    Dickey, Fred M.; Holswade, Scott C.; Romero, Louis A.

    1999-01-01

    A method and apparatus maps a Gaussian beam into a beam with a uniform irradiance profile by exploiting the Fourier transform properties of lenses. A phase element imparts a design phase onto an input beam and the output optical field from a lens is then the Fourier transform of the input beam and the phase function from the phase element. The phase element is selected in accordance with a dimensionless parameter which is dependent upon the radius of the incoming beam, the desired spot shape, the focal length of the lens and the wavelength of the input beam. This dimensionless parameter can also be used to evaluate the quality of a system. In order to control the radius of the incoming beam, optics such as a telescope can be employed. The size of the target spot and the focal length can be altered by exchanging the transform lens, but the dimensionless parameter will remain the same. The quality of the system, and hence the value of the dimensionless parameter, can be altered by exchanging the phase element. The dimensionless parameter provides design guidance, system evaluation, and indication as to how to improve a given system.

  19. Gaussian beam profile shaping apparatus, method therefore and evaluation thereof

    DOEpatents

    Dickey, F.M.; Holswade, S.C.; Romero, L.A.

    1999-01-26

    A method and apparatus maps a Gaussian beam into a beam with a uniform irradiance profile by exploiting the Fourier transform properties of lenses. A phase element imparts a design phase onto an input beam and the output optical field from a lens is then the Fourier transform of the input beam and the phase function from the phase element. The phase element is selected in accordance with a dimensionless parameter which is dependent upon the radius of the incoming beam, the desired spot shape, the focal length of the lens and the wavelength of the input beam. This dimensionless parameter can also be used to evaluate the quality of a system. In order to control the radius of the incoming beam, optics such as a telescope can be employed. The size of the target spot and the focal length can be altered by exchanging the transform lens, but the dimensionless parameter will remain the same. The quality of the system, and hence the value of the dimensionless parameter, can be altered by exchanging the phase element. The dimensionless parameter provides design guidance, system evaluation, and indication as to how to improve a given system. 27 figs.

  20. Thickness Effects of TiC Interlayer on Tribological Properties of Diamond-Like Carbon Prepared by Unbalanced Magnetron Sputtering Method.

    PubMed

    Park, Chulmin; Lee, Jaehyeong; Park, Yong Seob

    2015-11-01

    We investigated the tribological properties of diamond-like carbon (DLC) films prepared with TiC interlayer of various thicknesses as the adhesive layer. DLC and TiC thin films were prepared using unbalanced magnetron (UBM) sputtering method using graphite and titanium as targets. TiC films as the interlayer were deposited under DLC films and various physical, tribological, and structural properties of the films fabricated with various TiC interlayer thicknesses were investigated. With various TiC interlayer thicknesses under DLC films, the tribological properties of films were improved with increasing thickness and the DLC/TiC layer fabricated by unbalanced magnetron sputtering method are exhibited maximum high hardness over 27 GPa and high elastic modulus over 242 GPa, and a smooth surface below 0.09 nm.

  1. Sputtering and ion plating

    NASA Technical Reports Server (NTRS)

    1972-01-01

    The proceedings of a conference on sputtering and ion plating are presented. Subjects discussed are: (1) concepts and applications of ion plating, (2) sputtering for deposition of solid film lubricants, (3) commercial ion plating equipment, (4) industrial potential for ion plating and sputtering, and (5) fundamentals of RF and DC sputtering.

  2. Method for separating FEL output beams from long wavelength radiation

    DOEpatents

    Neil, George; Shinn, Michelle D.; Gubeli, Joseph

    2016-04-26

    A method for improving the output beam quality of a free electron laser (FEL) by reducing the amount of emission at wavelengths longer than the electron pulse length and reducing the amount of edge radiation. A mirror constructed of thermally conductive material and having an aperture therein is placed at an oblique angle with respect to the beam downstream of the bending magnet but before any sensitive use of the FEL beam. The aperture in the mirror is sized to deflect emission longer than the wavelength of the FEL output while having a minor impact on the FEL output beam. A properly sized aperture will enable the FEL radiation, which is coherent and generally at a much shorter wavelength than the bending radiations, to pass through the aperture mirror. The much higher divergence bending radiations will subsequently strike the aperture mirror and be reflected safely out of the way.

  3. The effect of Si content on structure and mechanical features of silicon-containing calcium-phosphate-based films deposited by RF-magnetron sputtering on titanium substrate treated by pulsed electron beam

    NASA Astrophysics Data System (ADS)

    Surmeneva, M.; Tyurin, A.; Mukhametkaliyev, T.; Teresov, A.; Koval, A.; Pirozhkova, T.; Shuvarin, I.; Chudinova, E.; Surmenev, R.

    2015-11-01

    Silicon-containing calcium phosphate (Si-CaP) coatings were fabricated by radio frequency (rf) magnetron sputtering using the targets prepared from hydroxyapatite (HA) powder with different silicon content. A powder of Si-HA (Ca10(PO4)6-x(SiO4)x(OH)2-x, x=0.5 and 1.72) was prepared by mechanochemical activation and then used as a precursor-powder to prepare a target for sputtering. The titanium substrate was acid etched and treated with pulsed electron beam with an energy density of 15 J/cm2. The average crystallite size as determined by XRD was 28 nm for the coatings obtained using the target prepared from the Si-HA powder (x=0.5), whereas Si-CaP (Si-HA powder x=1.72) films showed an amorphous structure. The nanohardness and the Young's modulus of the Si-CaP coating (x=0.5) deposited on titanium treated by pulsed electron beam are enhanced to 4.5 and 113 GPa compared to titanium substrate. Increase of Si content resulted in a dramatic decrease of the nanohardness and Young's modulus of Si-CaP films. However, Si-CaP coatings with the highest Si content revealed significantly lower values of elastic modulus, but slightly higher values of H/E and H3/E2 than did the non-coated specimens. Rf-magnetron sputtering allowed us to produce Si- CaP coatings with higher nanohardness and lower elastic modulus compared to titanium substrate.

  4. Method of deposition by molecular beam epitaxy

    DOEpatents

    Chalmers, Scott A.; Killeen, Kevin P.; Lear, Kevin L.

    1995-01-01

    A method is described for reproducibly controlling layer thickness and varying layer composition in an MBE deposition process. In particular, the present invention includes epitaxially depositing a plurality of layers of material on a substrate with a plurality of growth cycles whereby the average of the instantaneous growth rates for each growth cycle and from one growth cycle to the next remains substantially constant as a function of time.

  5. Magnetron sputtering source

    DOEpatents

    Makowiecki, D.M.; McKernan, M.A.; Grabner, R.F.; Ramsey, P.B.

    1994-08-02

    A magnetron sputtering source for sputtering coating substrates includes a high thermal conductivity electrically insulating ceramic and magnetically attached sputter target which can eliminate vacuum sealing and direct fluid cooling of the cathode assembly. The magnetron sputtering source design results in greater compactness, improved operating characteristics, greater versatility, and low fabrication cost. The design easily retrofits most sputtering apparatuses and provides for safe, easy, and cost effective target replacement, installation, and removal. 12 figs.

  6. Magnetron sputtering source

    DOEpatents

    Makowiecki, Daniel M.; McKernan, Mark A.; Grabner, R. Fred; Ramsey, Philip B.

    1994-01-01

    A magnetron sputtering source for sputtering coating substrates includes a high thermal conductivity electrically insulating ceramic and magnetically attached sputter target which can eliminate vacuum sealing and direct fluid cooling of the cathode assembly. The magnetron sputtering source design results in greater compactness, improved operating characteristics, greater versatility, and low fabrication cost. The design easily retrofits most sputtering apparatuses and provides for safe, easy, and cost effective target replacement, installation, and removal.

  7. A neural network method for restoring the initial impurity concentration distribution from data of ion sputter depth profiling

    NASA Astrophysics Data System (ADS)

    Shyrokorad, D. V.; Kornich, G. V.

    2016-07-01

    A new approach to solving the problem of restoring the initial impurity concentration distribution from data of ion sputter depth profiling is proposed. The algorithm of impurity profile restoration is based on using an artificial neural network with the input signals representing surface concentrations of impurity determined at sequential moments of sputter depth profiling. The artificial neural network is trained for various depths and thicknesses of the impurity-containing layer and various values of parameters of the adopted model equation of diffusion-like ion mixing.

  8. High-mobility ZrInO thin-film transistor prepared by an all-DC-sputtering method at room temperature

    PubMed Central

    Xiao, Peng; Dong, Ting; Lan, Linfeng; Lin, Zhenguo; Song, Wei; Luo, Dongxiang; Xu, Miao; Peng, Junbiao

    2016-01-01

    Thin-film transistors (TFTs) with zirconium-doped indium oxide (ZrInO) semiconductor were successfully fabricated by an all-DC-sputtering method at room temperature. The ZrInO TFT without any intentionally annealing steps exhibited a high saturation mobility of 25.1 cm2V−1s−1. The threshold voltage shift was only 0.35 V for the ZrInO TFT under positive gate bias stress for 1 hour. Detailed studies showed that the room-temperature ZrInO thin film was in the amorphous state with low carrier density because of the strong bonding strength of Zr-O. The room-temperature process is attractive for its compatibility with almost all kinds of the flexible substrates, and the DC sputtering process is good for the production efficiency improvement and the fabrication cost reduction. PMID:27118177

  9. High-mobility ZrInO thin-film transistor prepared by an all-DC-sputtering method at room temperature.

    PubMed

    Xiao, Peng; Dong, Ting; Lan, Linfeng; Lin, Zhenguo; Song, Wei; Luo, Dongxiang; Xu, Miao; Peng, Junbiao

    2016-01-01

    Thin-film transistors (TFTs) with zirconium-doped indium oxide (ZrInO) semiconductor were successfully fabricated by an all-DC-sputtering method at room temperature. The ZrInO TFT without any intentionally annealing steps exhibited a high saturation mobility of 25.1 cm(2)V(-1)s(-1). The threshold voltage shift was only 0.35 V for the ZrInO TFT under positive gate bias stress for 1 hour. Detailed studies showed that the room-temperature ZrInO thin film was in the amorphous state with low carrier density because of the strong bonding strength of Zr-O. The room-temperature process is attractive for its compatibility with almost all kinds of the flexible substrates, and the DC sputtering process is good for the production efficiency improvement and the fabrication cost reduction. PMID:27118177

  10. High-mobility ZrInO thin-film transistor prepared by an all-DC-sputtering method at room temperature.

    PubMed

    Xiao, Peng; Dong, Ting; Lan, Linfeng; Lin, Zhenguo; Song, Wei; Luo, Dongxiang; Xu, Miao; Peng, Junbiao

    2016-04-27

    Thin-film transistors (TFTs) with zirconium-doped indium oxide (ZrInO) semiconductor were successfully fabricated by an all-DC-sputtering method at room temperature. The ZrInO TFT without any intentionally annealing steps exhibited a high saturation mobility of 25.1 cm(2)V(-1)s(-1). The threshold voltage shift was only 0.35 V for the ZrInO TFT under positive gate bias stress for 1 hour. Detailed studies showed that the room-temperature ZrInO thin film was in the amorphous state with low carrier density because of the strong bonding strength of Zr-O. The room-temperature process is attractive for its compatibility with almost all kinds of the flexible substrates, and the DC sputtering process is good for the production efficiency improvement and the fabrication cost reduction.

  11. High rate deposition of photocatalytic TiO{sub 2} films with high activity by hollow cathode gas-flow sputtering method

    SciTech Connect

    Kubo, Yoshiyuki; Iwabuchi, Yoshinori; Yoshikawa, Masato; Sato, Yasushi; Shigesato, Yuzo

    2008-07-15

    Photocatalytic TiO{sub 2} films were deposited by a hollow cathode gas-flow sputtering method using two Ti metal targets mounted parallel to each other. The Ar and O{sub 2} flow rates were 3000 and 0-50 SCCM (SCCM denotes cubic centimeter per minute at STP), respectively, and total gas pressure during the deposition was maintained at 45 Pa. The highest deposition rate for the photocatalytic TiO{sub 2} films was 162 nm/min at 30 SCCM of O{sub 2} flow. The as-deposited films and postannealed films, annealed in air at 300 deg. C for 1 h, were used to carry out photocatalytic decomposition of acetaldehyde (CH{sub 3}CHO). In particular, the postannealed films showed extremely high photocatalytic activity compared to the photocatalytic activity of films deposited by conventional reactive sputtering.

  12. High-mobility ZrInO thin-film transistor prepared by an all-DC-sputtering method at room temperature

    NASA Astrophysics Data System (ADS)

    Xiao, Peng; Dong, Ting; Lan, Linfeng; Lin, Zhenguo; Song, Wei; Luo, Dongxiang; Xu, Miao; Peng, Junbiao

    2016-04-01

    Thin-film transistors (TFTs) with zirconium-doped indium oxide (ZrInO) semiconductor were successfully fabricated by an all-DC-sputtering method at room temperature. The ZrInO TFT without any intentionally annealing steps exhibited a high saturation mobility of 25.1 cm2V‑1s‑1. The threshold voltage shift was only 0.35 V for the ZrInO TFT under positive gate bias stress for 1 hour. Detailed studies showed that the room-temperature ZrInO thin film was in the amorphous state with low carrier density because of the strong bonding strength of Zr-O. The room-temperature process is attractive for its compatibility with almost all kinds of the flexible substrates, and the DC sputtering process is good for the production efficiency improvement and the fabrication cost reduction.

  13. A new method for generating a hollow Gaussian beam

    NASA Astrophysics Data System (ADS)

    Wei, Cun; Lu, Xingyuan; Wu, Gaofeng; Wang, Fei; Cai, Yangjian

    2014-04-01

    Hollow Gaussian beam (HGB) was introduced 10 years ago (Cai et al. in Opt Lett 28:1084, 2003). In this paper, we introduce a new method for generating a HGB through transforming a Laguerre-Gaussian beam with radial index 0 and azimuthal index l into a HGB with mode n = l/2. Furthermore, we report experimental generation of a HGB based on the proposed method, and we carry out experimental study of the focusing properties of the generated HGB. Our experimental results agree well with the theoretical predictions.

  14. Method to improve optical parametric oscillator beam quality

    DOEpatents

    Smith, Arlee V.; Alford, William J.; Bowers, Mark S.

    2003-11-11

    A method to improving optical parametric oscillator (OPO) beam quality having an optical pump, which generates a pump beam at a pump frequency greater than a desired signal frequency, a nonlinear optical medium oriented so that a signal wave at the desired signal frequency and a corresponding idler wave are produced when the pump beam (wave) propagates through the nonlinear optical medium, resulting in beam walk off of the signal and idler waves, and an optical cavity which directs the signal wave to repeatedly pass through the nonlinear optical medium, said optical cavity comprising an equivalently even number of non-planar mirrors that produce image rotation on each pass through the nonlinear optical medium. Utilizing beam walk off where the signal wave and said idler wave have nonparallel Poynting vectors in the nonlinear medium and image rotation, a correlation zone of distance equal to approximately .rho.L.sub.crystal is created which, through multiple passes through the nonlinear medium, improves the beam quality of the OPO output.

  15. Acetone cluster ion beam irradiation on solid surfaces

    NASA Astrophysics Data System (ADS)

    Ryuto, H.; Kakumoto, Y.; Itozaki, S.; Takeuchi, M.; Takaoka, G. H.

    2013-11-01

    Acetone cluster ions were produced by the adiabatic expansion method without using a support gas. The acceleration voltage of the acetone cluster ion beam was from 3 to 9 kV. The sputter depths of silicon irradiated with acetone cluster ion beams increased with acceleration voltage and fluence of the acetone cluster ion beams. The sputter depth was close to that induced by the ethanol cluster ion beam accelerated at the same acceleration voltage. The sputtering yield of silicon by the acetone cluster ion beam at an acceleration voltage of 9 kV was approximately 100 times larger than that for an argon monomer ion beam at 9 keV. The sputter depths of silicon dioxide irradiated with the acetone cluster ion beams were smaller than those of silicon, but larger than those induced by ethanol cluster ion beams. The XPS analysis of silicon surface indicated that the silicon surface was more strongly oxidized by the irradiation of acetone cluster ion beam than ethanol cluster ion beam.

  16. Shallow gas cloud illumination analysis by the focal beam method

    NASA Astrophysics Data System (ADS)

    Latiff, Abdul Halim Abdul

    2016-02-01

    This research will address the illumination issue of seismic data below a shallow gas cloud, also known as shallow gas accumulation. In general, poor and distorted seismic data underneath gas zones depend on four major factors; namely the velocity of the gas zones, the depth of the target reflector, the location of the source and the receiver during seismic acquisition, and the frequency of the seismic signals. These factors will be scrutinized in detail by using the focal beam method. The focal beam method incorporates the double focusing concept in order to obtain two important attributes for illumination analysis: (i) Resolution function beam, (ii) amplitude versus ray parameter (AVP) imprint, which is obtained by transforming the modelled data into the radon domain. Both illumination attributes are then applied to a gas-affected field in the Malaysia Basin. The results show well-defined illumination beneath the shallow anomalies and provide a better representation of the subsurface.

  17. Physical and Optical Properties of SnO2/ZnO Film Prepared by an RF Magnetron Sputtering Method.

    PubMed

    Park, Jooyoung; Lee, Ikjae; Kim, Jaeyong

    2016-03-01

    Al-, Ga-, and In-doped ZnO thin films are widely used in many technical applications, such as in solar cells and on transparent conducting oxides having high optical transmission and low resistivity values. We prepared SnO2-doped ZnO thin films on quartz substrates by using an RF magnetron sputtering method at a substrate temperature of 350 degrees C. The ratio of SnO2 to ZnO was varied from 0 to 5:5 to investigate the effects of Sn on structure and physical properties of ZnO film. The samples were synthesized at a base pressure of 1.3 x 10(-4) Pa with a working pressure of 1.3 Pa and an RF power of 40 W under Ar atmosphere. The results of X-ray diffraction data revealed that pure ZnO films exhibit a strong (002) orientation and a polycrystalline wurzite hexagonal structure. However, as increasing the SnO2 concentration, ZnO transforms to an amorphous phase. The results of the Hall-effect-measurement system revealed that the resistivity values of the films increased as increasing the doping level of SnO2. The AFM data of morphology and microstructure showed that the grain size decreased with increasing SnO2 contents while the total area of grain the boundary increased. The average value of the transmittance of the films in the visible light range was 80-95% and was shifted toward to the shorter wavelengths of the absorption edges with increasing SnO2 contents.

  18. Physical and Optical Properties of SnO2/ZnO Film Prepared by an RF Magnetron Sputtering Method.

    PubMed

    Park, Jooyoung; Lee, Ikjae; Kim, Jaeyong

    2016-03-01

    Al-, Ga-, and In-doped ZnO thin films are widely used in many technical applications, such as in solar cells and on transparent conducting oxides having high optical transmission and low resistivity values. We prepared SnO2-doped ZnO thin films on quartz substrates by using an RF magnetron sputtering method at a substrate temperature of 350 degrees C. The ratio of SnO2 to ZnO was varied from 0 to 5:5 to investigate the effects of Sn on structure and physical properties of ZnO film. The samples were synthesized at a base pressure of 1.3 x 10(-4) Pa with a working pressure of 1.3 Pa and an RF power of 40 W under Ar atmosphere. The results of X-ray diffraction data revealed that pure ZnO films exhibit a strong (002) orientation and a polycrystalline wurzite hexagonal structure. However, as increasing the SnO2 concentration, ZnO transforms to an amorphous phase. The results of the Hall-effect-measurement system revealed that the resistivity values of the films increased as increasing the doping level of SnO2. The AFM data of morphology and microstructure showed that the grain size decreased with increasing SnO2 contents while the total area of grain the boundary increased. The average value of the transmittance of the films in the visible light range was 80-95% and was shifted toward to the shorter wavelengths of the absorption edges with increasing SnO2 contents. PMID:27455746

  19. Ion beam texturing

    NASA Technical Reports Server (NTRS)

    Hudson, W. R.

    1976-01-01

    A microscopic surface texture is created by sputter etching a surface while simultaneously sputter depositing a lower sputter yield material onto the surface. A xenon ion beam source has been used to perform this texturing process on samples as large as three centimeters in diameter. Ion beam textured surface structures have been characterized with SEM photomicrographs for a large number of materials including Cu, Al, Si, Ti, Ni, Fe, Stainless steel, Au, and Ag. Surfaces have been textured using a variety of low sputter yield materials - Ta, Mo, Nb, and Ti. The initial stages of the texture creation have been documented, and the technique of ion beam sputter removal of any remaining deposited material has been studied. A number of other texturing parameters have been studied such as the variation of the texture with ion beam power, surface temperature, and the rate of texture growth with sputter etching time.

  20. Method and apparatus to monitor a beam of ionizing radiation

    DOEpatents

    Blackburn, Brandon W.; Chichester, David L.; Watson, Scott M.; Johnson, James T.; Kinlaw, Mathew T.

    2015-06-02

    Methods and apparatus to capture images of fluorescence generated by ionizing radiation and determine a position of a beam of ionizing radiation generating the fluorescence from the captured images. In one embodiment, the fluorescence is the result of ionization and recombination of nitrogen in air.

  1. Two methods for the production of antihydrogen beams

    SciTech Connect

    Ispirian, K.A.; Ispirian, R.K.

    1994-10-01

    The possibility for obtaining antihydrogen beams at the antiproton storage rings in the head-on collisions of antiprotons with synchrotron radiation photons is considered. As a second method, it is proposed that an insertion in which the antiprotons are accompanied with positrons be added; their recombination results in antihydrogen production. 8 refs., 1 fig.

  2. A METHOD TO CONTROL MULTIPASS BEAM BREAKUP IN RECIRCULATING LINACS

    SciTech Connect

    Byung Yunn

    2003-05-01

    We investigate a method to control the multipass dipole beam breakup instability in a recirculating linac including energy recovery. Effectiveness of an external feedback system for such a goal is shown clearly in a simplified model. We also verify the theoretical result with a simulation study.

  3. Annealing dependence of residual stress and optical properties of TiO2 thin film deposited by different deposition methods.

    PubMed

    Chen, Hsi-Chao; Lee, Kuan-Shiang; Lee, Cheng-Chung

    2008-05-01

    Titanium oxide (TiO(2)) thin films were prepared by different deposition methods. The methods were E-gun evaporation with ion-assisted deposition (IAD), radio-frequency (RF) ion-beam sputtering, and direct current (DC) magnetron sputtering. Residual stress was released after annealing the films deposited by RF ion-beam or DC magnetron sputtering but not evaporation, and the extinction coefficient varied significantly. The surface roughness of the evaporated films exceeded that of both sputtered films. At the annealing temperature of 300 degrees C, anatase crystallization occurred in evaporated film but not in the RF ion-beam or DC magnetron-sputtered films. TiO(2) films deposited by sputtering were generally more stable during annealing than those deposited by evaporation.

  4. Annealing dependence of residual stress and optical properties of TiO2 thin film deposited by different deposition methods.

    PubMed

    Chen, Hsi-Chao; Lee, Kuan-Shiang; Lee, Cheng-Chung

    2008-05-01

    Titanium oxide (TiO(2)) thin films were prepared by different deposition methods. The methods were E-gun evaporation with ion-assisted deposition (IAD), radio-frequency (RF) ion-beam sputtering, and direct current (DC) magnetron sputtering. Residual stress was released after annealing the films deposited by RF ion-beam or DC magnetron sputtering but not evaporation, and the extinction coefficient varied significantly. The surface roughness of the evaporated films exceeded that of both sputtered films. At the annealing temperature of 300 degrees C, anatase crystallization occurred in evaporated film but not in the RF ion-beam or DC magnetron-sputtered films. TiO(2) films deposited by sputtering were generally more stable during annealing than those deposited by evaporation. PMID:18449260

  5. A method for generating double-ring-shaped vector beams

    NASA Astrophysics Data System (ADS)

    Huan, Chen; Xiao-Hui, Ling; Zhi-Hong, Chen; Qian-Guang, Li; Hao, Lv; Hua-Qing, Yu; Xu-Nong, Yi

    2016-07-01

    We propose a method for generating double-ring-shaped vector beams. A step phase introduced by a spatial light modulator (SLM) first makes the incident laser beam have a nodal cycle. This phase is dynamic in nature because it depends on the optical length. Then a Pancharatnam–Berry phase (PBP) optical element is used to manipulate the local polarization of the optical field by modulating the geometric phase. The experimental results show that this scheme can effectively create double-ring-shaped vector beams. It provides much greater flexibility to manipulate the phase and polarization by simultaneously modulating the dynamic and the geometric phases. Project supported by the National Natural Science Foundation of China (Grant No. 11547017), the Hubei Engineering University Research Foundation, China (Grant No. z2014001), and the Natural Science Foundation of Hubei Province, China (Grant No. 2014CFB578).

  6. Quantitative cell imaging using single beam phase retrieval method

    NASA Astrophysics Data System (ADS)

    Anand, Arun; Chhaniwal, Vani; Javidi, Bahram

    2011-06-01

    Quantitative three-dimensional imaging of cells can provide important information about their morphology as well as their dynamics, which will be useful in studying their behavior under various conditions. There are several microscopic techniques to image unstained, semi-transparent specimens, by converting the phase information into intensity information. But most of the quantitative phase contrast imaging techniques is realized either by using interference of the object wavefront with a known reference beam or using phase shifting interferometry. A two-beam interferometric method is challenging to implement especially with low coherent sources and it also requires a fine adjustment of beams to achieve high contrast fringes. In this letter, the development of a single beam phase retrieval microscopy technique for quantitative phase contrast imaging of cells using multiple intensity samplings of a volume speckle field in the axial direction is described. Single beam illumination with multiple intensity samplings provides fast convergence and a unique solution of the object wavefront. Three-dimensional thickness profiles of different cells such as red blood cells and onion skin cells were reconstructed using this technique with an axial resolution of the order of several nanometers.

  7. Cardiac rate detection method based on the beam splitter prism

    NASA Astrophysics Data System (ADS)

    Yang, Lei; Liu, Xiaohua; Liu, Ming; Zhao, Yuejin; Dong, Liquan; Zhao, Ruirui; Jin, Xiaoli; Zhao, Jingsheng

    2013-09-01

    A new cardiac rate measurement method is proposed. Through the beam splitter prism, the common-path optical system of transmitting and receiving signals is achieved. By the focusing effect of the lens, the small amplitude motion artifact is inhibited and the signal-to-noise is improved. The cardiac rate is obtained based on the PhotoPlethysmoGraphy (PPG). We use LED as the light source and use photoelectric diode as the receiving tube. The LED and the photoelectric diode are on the different sides of the beam splitter prism and they form the optical system. The signal processing and display unit is composed by the signal processing circuit, data acquisition device and computer. The light emitted by the modulated LED is collimated by the lens and irradiates the measurement target through the beam splitter prism. The light reflected by the target is focused on the receiving tube through the beam splitter prism and another lens. The signal received by the photoelectric diode is processed by the analog circuit and obtained by the data acquisition device. Through the filtering and Fast Fourier Transform, the cardiac rate is achieved. We get the real time cardiac rate by the moving average method. We experiment with 30 volunteers, containing different genders and different ages. We compare the signals captured by this method to a conventional PPG signal captured concurrently from a finger. The results of the experiments are all relatively agreeable and the biggest deviation value is about 2bmp.

  8. A hybrid electron cyclotron resonance metal ion source with integrated sputter magnetron for the production of an intense Al⁺ ion beam.

    PubMed

    Weichsel, T; Hartung, U; Kopte, T; Zschornack, G; Kreller, M; Philipp, A

    2015-09-01

    A metal ion source prototype has been developed: a combination of magnetron sputter technology with 2.45 GHz electron cyclotron resonance (ECR) ion source technology-a so called magnetron ECR ion source (MECRIS). An integrated ring-shaped sputter magnetron with an Al target is acting as a powerful metal atom supply in order to produce an intense current of singly charged metal ions. Preliminary experiments show that an Al(+) ion current with a density of 167 μA/cm(2) is extracted from the source at an acceleration voltage of 27 kV. Spatially resolved double Langmuir probe measurements and optical emission spectroscopy were used to study the plasma states of the ion source: sputter magnetron, ECR, and MECRIS plasma. Electron density and temperature as well as Al atom density were determined as a function of microwave and sputter magnetron power. The effect of ECR heating is strongly pronounced in the center of the source. There the electron density is increased by one order of magnitude from 6 × 10(9) cm(-3) to 6 × 10(10) cm(-3) and the electron temperature is enhanced from about 5 eV to 12 eV, when the ECR plasma is ignited to the magnetron plasma. Operating the magnetron at constant power, it was observed that its discharge current is raised from 1.8 A to 4.8 A, when the ECR discharge was superimposed with a microwave power of 2 kW. At the same time, the discharge voltage decreased from about 560 V to 210 V, clearly indicating a higher plasma density of the MECRIS mode. The optical emission spectrum of the MECRIS plasma is dominated by lines of excited Al atoms and shows a significant contribution of lines arising from singly ionized Al. Plasma emission photography with a CCD camera was used to prove probe measurements and to identify separated plasma emission zones originating from the ECR and magnetron discharge.

  9. A hybrid electron cyclotron resonance metal ion source with integrated sputter magnetron for the production of an intense Al+ ion beam

    NASA Astrophysics Data System (ADS)

    Weichsel, T.; Hartung, U.; Kopte, T.; Zschornack, G.; Kreller, M.; Philipp, A.

    2015-09-01

    A metal ion source prototype has been developed: a combination of magnetron sputter technology with 2.45 GHz electron cyclotron resonance (ECR) ion source technology—a so called magnetron ECR ion source (MECRIS). An integrated ring-shaped sputter magnetron with an Al target is acting as a powerful metal atom supply in order to produce an intense current of singly charged metal ions. Preliminary experiments show that an Al+ ion current with a density of 167 μA/cm2 is extracted from the source at an acceleration voltage of 27 kV. Spatially resolved double Langmuir probe measurements and optical emission spectroscopy were used to study the plasma states of the ion source: sputter magnetron, ECR, and MECRIS plasma. Electron density and temperature as well as Al atom density were determined as a function of microwave and sputter magnetron power. The effect of ECR heating is strongly pronounced in the center of the source. There the electron density is increased by one order of magnitude from 6 × 109 cm-3 to 6 × 1010 cm-3 and the electron temperature is enhanced from about 5 eV to 12 eV, when the ECR plasma is ignited to the magnetron plasma. Operating the magnetron at constant power, it was observed that its discharge current is raised from 1.8 A to 4.8 A, when the ECR discharge was superimposed with a microwave power of 2 kW. At the same time, the discharge voltage decreased from about 560 V to 210 V, clearly indicating a higher plasma density of the MECRIS mode. The optical emission spectrum of the MECRIS plasma is dominated by lines of excited Al atoms and shows a significant contribution of lines arising from singly ionized Al. Plasma emission photography with a CCD camera was used to prove probe measurements and to identify separated plasma emission zones originating from the ECR and magnetron discharge.

  10. Simplex method in problems of light-beam phase control.

    PubMed

    Chesnokov, S S; Davletshina, I V

    1995-12-20

    The possibility of the application of the simplex method to problems of wave-front control for light beams propagating in a nonlinear medium is investigated. A numerical analysis of simplex-method effectiveness in comparison with the gradient procedure of hill climbing is carried out. The regimes of stationary and nonstationary wind refraction are considered. The simplest optimization of the simplex size and the control basis is done. PMID:21068958

  11. An inertia-capacitance beam substructure formulation based on the bond graph method with application to rotating beams

    NASA Astrophysics Data System (ADS)

    Xing, Yihan; Pedersen, Eilif; Moan, Torgeir

    2011-10-01

    In this paper, a novel inertia-capacitance (IC) beam substructure formulation based on the IC-field presentation from the bond graph method is developed. The IC beam provides a modular, systematic and graphical approach to beam modeling. These features allow the modeler to focus more on the modeling and less on the mathematics. As such, the IC beam is proposed as an alternative to the many existing types of beam models available in the literature. The IC beam is formulated in the center of mass body fixed coordinate system allowing for easy interfacing in a multibody system setting. This floating frame approach is also computationally cheap. Elastic deformations in the IC beam are assumed to be small and described by modal superposition. The formulation couples rigid body and elastic deformations in a nonlinear fashion. The formulation is also compact and efficient. Detailed derivations for a two-dimensional planar IC beam with bending modes are presented. A modal acceleration method based on the decoupling of bending modes is proposed for use in the IC beam. The rotating beam spin-up maneuver problem is solved. The Karnopp-Margolis method is applied to ensure complete integral causality for an efficient numerical system. Geometric substructuring technique is applied to model large deflections. The IC beam is shown to be capable of solving the rotating beam problem accurately and efficiently.

  12. Sputtering Threshold Energies of Heavy Ions

    NASA Technical Reports Server (NTRS)

    Mantenieks, Maris A.

    1999-01-01

    Sputter erosion in ion thrusters has been measured in lifetests at discharge voltages as low as 25 V. Thruster operation at this discharge voltage results in component erosion rates sufficiently low to satisfy most mission requirements. It has been recognized that most of the internal sputtering in ion thrusters is done by doubly charged ions. Knowledge of the sputtering threshold voltage of a xenon molybdenum system would be beneficial in understanding the sputtering process as well as making more accurate calculations of the sputtering rates of ion thruster components. Sputtering threshold energies calculated from various formulations found in the literature results in values ranging from 28 to 200 eV. It is evident that some of these formulations cannot be relied upon to provide sputtering thresholds with any degree of accuracy. This paper re-examines the threshold energies measurements made in the early sixties by Askerov and Sena, and Stuart and Wehner. The threshold voltages as derived by Askerov and au have been reevaluated by using a different extrapolation method of sputter yields at low ion energies. The resulting threshold energies are in general similar to those measured by Stuart and Wehner. An empirical relationship is derived,for mercury and xenon ions for the ratio of the sputtering threshold energy to the sublimation energy as a function of the ratio of target to ion atomic mass.

  13. Effects of the duty ratio on the niobium oxide film deposited by pulsed-DC magnetron sputtering methods.

    PubMed

    Eom, Ji Mi; Oh, Hyun Gon; Cho, Il Hwan; Kwon, Sang Jik; Cho, Eou Sik

    2013-11-01

    Niobium oxide (Nb2O5) films were deposited on p-type Si wafers and sodalime glasses at a room temperature using in-line pulsed-DC magnetron sputtering system with various duty ratios. The different duty ratio was obtained by varying the reverse voltage time of pulsed DC power from 0.5 to 2.0 micros at the fixed frequency of 200 kHz. From the structural and optical characteristics of the sputtered NbOx films, it was possible to obtain more uniform and coherent NbOx films in case of the higher reverse voltage time as a result of the cleaning effect on the Nb2O5 target surface. The electrical characteristics from the metal-insulator-semiconductor (MIS) fabricated with the NbOx films shows the leakage currents are influenced by the reverse voltage time and the Schottky barrier diode characteristics.

  14. Method for enhancing stability in multi-beam microscopy

    NASA Astrophysics Data System (ADS)

    Huang, Yujia; Wang, Yifan; Kuang, Cuifang; Liu, Xu

    2016-10-01

    A method based on close loop control of four degrees of freedom (4DF) is proposed to enhance angular and translational stability of beams in multi-beam microscopy including STED, RESOLFT and CARS, etc. Deviations of multi-beams can be measured and corrected by our module, which is composed of four degrees of freedom position sensitive detectors (4DF PSD) and two actuator mirrors (AM) with motor and piezo servos. An output crosslink matrix obtained by a self-learning process is used to control four actuators to compensate for 4DF independently in beam deviations. We realize a standard deviation within about 2 µm at the entrance pupil plane (a spatial optical path of 180 cm for the whole system) using a compact stabilization system, which is equivalent to around 3 nm at the sample plane under the 100×  objective lens with a focal length of 2 mm, corresponding to an improvement of stability by an order of magnitude. Our method can react fast in real time and compensate for large disturbances caused by air agitation or temperature variation.

  15. Research on method for laser beam shape parameters detection

    NASA Astrophysics Data System (ADS)

    Su, Jun-hong; Bai, Zhao-feng

    2014-09-01

    The laser beam quality measurement has become a hot topic in the field of laser engineering nowadays. Based on the method of Hartmann-Shack, the four-wave lateral shearing interferometer is presented in this paper to achieve the laser beam shape parameters. The principle of shearing technology is described in detail. Parameters of semiconductor laser at 532nm and ZYGO interferometer laser are tested based on the method of four-wave lateral shearing interference and their test results are compared with the nominal parameters. As the results, the test results are basically consistent with the nominal value, which fully shows the feasibility of the four-wave lateral shearing interference method.

  16. Preparation and Characterization of Ba(ZrxTi1-x)O3 Thin Films Using Reactive Sputtering Method

    NASA Astrophysics Data System (ADS)

    Kim, Jin Woong; Osumi, Tsuyoshi; Mastuoka, Masashi; Tai, Takeshi; Nishide, Masamichi; Funakubo, Hiroshi; Shima, Hiromi; Nishida, Ken; Yamamoto, Takashi

    2012-09-01

    Ba(ZrxTi1-x)O3 (BZT) thin films with different Zr contents were deposited on (100) MgO and (100) Pt/(100) MgO substrates by RF-magnetron reactive sputtering using metal targets. The BZT (0 < x < 0.89) thin films had a single perovskite phase with only (001)/(100) orientation. In all cases, the ratio of Ba/Ti was stoichiometric according to X-ray fluorescence spectrometry (WDX) measurement. Atomic force microscopy (AFM) study proved that BZT films possess a dense microstructure without cracks or voids. The grain size was found to decrease with increasing of Zr content. The effect of Zr content on the dielectric constant and leakage current was studied. BZT thin films showed ferroelectric-to-paraelectric properties with increasing Zr content and excellent leakage properties according to measurements of electrical properties. These results indicated that we succeeded in depositing high-quality and low-sputter-damage BZT thin films by reactive sputtering using metal targets.

  17. Method to control deposition rate instabilities—High power impulse magnetron sputtering deposition of TiO{sub 2}

    SciTech Connect

    Kossoy, Anna E-mail: anna.kossoy@gmail.com; Magnusson, Rögnvaldur L.; Tryggvason, Tryggvi K.; Leosson, Kristjan; Olafsson, Sveinn

    2015-03-15

    The authors describe how changes in shutter state (open/closed) affect sputter plasma conditions and stability of the deposition rate of Ti and TiO{sub 2} films. The films were grown by high power impulse magnetron sputtering in pure Ar and in Ar/O{sub 2} mixture from a metallic Ti target. The shutter state was found to have an effect on the pulse waveform for both pure Ar and reactive sputtering of Ti also affecting stability of TiO{sub 2} deposition rate. When the shutter opened, the shape of pulse current changed from rectangular to peak-plateau and pulse energy decreased. The authors attribute it to the change in plasma impedance and gas rarefaction originating in geometry change in front of the magnetron. TiO{sub 2} deposition rate was initially found to be high, 1.45 Å/s, and then dropped by ∼40% during the first 5 min, while for Ti the change was less obvious. Instability of deposition rate poses significant challenge for growing multilayer heterostructures. In this work, the authors suggest a way to overcome this by monitoring the integrated average energy involved in the deposition process. It is possible to calibrate and control the film thickness by monitoring the integrated pulse energy and end growth when desired integrated pulse energy level has been reached.

  18. Sputter deposition methods for superconductors. February 1977-September 1989 (Citations from the Searchable Physics Information Notices data base). Report for February 1977-September 1989

    SciTech Connect

    Not Available

    1989-11-01

    This bibliography contains citations concerning the deposition of superconducting materials by sputtering. Citations discuss the deposition process. Properties and structures of materials prepared by sputtering are also considered. (Contains 112 citations fully indexed and including a title list.)

  19. A beam hardening correction method based on HL consistency

    NASA Astrophysics Data System (ADS)

    Mou, Xuanqin; Tang, Shaojie; Yu, Hengyong

    2006-08-01

    XCT with polychromatic tube spectrum causes artifact called beam hardening effect. The current correction in CT device is carried by apriori polynomial from water phantom experiment. This paper proposes a new beam hardening correction algorithm that the correction polynomial depends on the relativity of projection data in angles, which obeys Helgasson-Ludwig Consistency (HL Consistency). Firstly, a bi-polynomial is constructed to characterize the beam hardening effect based on the physical model of medical x-ray imaging. In this bi-polynomial, a factor r(γ,β) represents the ratio of the attenuation contributions caused by high density mass (bone, etc.) to low density mass (muscle, vessel, blood, soft tissue, fat, etc.) respectively in the projection angle β and fan angle γ. Secondly, let r(γ,β)=0, the bi-polynomial is degraded as a sole-polynomial. The coefficient of this polynomial can be calculated based on HL Consistency. Then, the primary correction is reached, which is also more efficient in theoretical than the correction method in current CT devices. Thirdly, based on the result of a normal CT reconstruction from the corrected projection data, r(γ,β) can be estimated. Fourthly, the coefficient of bi-polynomial can also be calculated based HL Consistency and the final correction are achieved. Experiments of circular cone beam CT indicate this method an excellent property. Correcting beam hardening effect based on HL Consistency, not only achieving a self-adaptive and more precise correction, but also getting rid of regular inconvenient water phantom experiments, will renovate the correction technique of current CT devices.

  20. Production of a highly charged uranium ion beam with RIKEN superconducting electron cyclotron resonance ion source

    SciTech Connect

    Higurashi, Y.; Ohnishi, J.; Nakagawa, T.; Haba, H.; Fujimaki, M.; Komiyama, M.; Kamigaito, O.; Tamura, M.; Aihara, T.; Uchiyama, A.

    2012-02-15

    A highly charged uranium (U) ion beam is produced from the RIKEN superconducting electron cyclotron resonance ion source using 18 and 28 GHz microwaves. The sputtering method is used to produce this U ion beam. The beam intensity is strongly dependent on the rod position and sputtering voltage. We observe that the emittance of U{sup 35+} for 28 GHz microwaves is almost the same as that for 18 GHz microwaves. It seems that the beam intensity of U ions produced using 28 GHz microwaves is higher than that produced using 18 GHz microwaves at the same Radio Frequency (RF) power.

  1. Numerical solution of fractionally damped beam by homotopy perturbation method

    NASA Astrophysics Data System (ADS)

    Behera, Diptiranjan; Chakraverty, Snehashish

    2013-06-01

    This paper investigates the numerical solution of a viscoelastic continuous beam whose damping behaviours are defined in term of fractional derivatives of arbitrary order. The Homotopy Perturbation Method (HPM) is used to obtain the dynamic response. Unit step function response is considered for the analysis. The obtained results are depicted in various plots. From the results obtained it is interesting to note that by increasing the order of the fractional derivative the beam suffers less oscillation. Similar observations have also been made by keeping the order of the fractional derivative constant and varying the damping ratios. Comparisons are made with the analytic solutions obtained by Zu-feng and Xiao-yan [Appl. Math. Mech. 28, 219 (2007)] to show the effectiveness and validation of this method.

  2. Method and apparatus for laser-controlled proton beam radiology

    DOEpatents

    Johnstone, C.J.

    1998-06-02

    A proton beam radiology system provides cancer treatment and proton radiography. The system includes an accelerator for producing an H{sup {minus}} beam and a laser source for generating a laser beam. A photodetachment module is located proximate the periphery of the accelerator. The photodetachment module combines the H{sup {minus}} beam and laser beam to produce a neutral beam therefrom within a subsection of the H{sup {minus}} beam. The photodetachment module emits the neutral beam along a trajectory defined by the laser beam. The photodetachment module includes a stripping foil which forms a proton beam from the neutral beam. The proton beam is delivered to a conveyance segment which transports the proton beam to a patient treatment station. The photodetachment module further includes a laser scanner which moves the laser beam along a path transverse to the cross-section of the H{sup {minus}} beam in order to form the neutral beam in subsections of the H{sup {minus}} beam. As the scanning laser moves across the H{sup {minus}} beam, it similarly varies the trajectory of the proton beam emitted from the photodetachment module and in turn varies the target location of the proton beam upon the patient. Intensity modulation of the proton beam can also be achieved by controlling the output of the laser. 9 figs.

  3. Method and apparatus for laser-controlled proton beam radiology

    DOEpatents

    Johnstone, Carol J.

    1998-01-01

    A proton beam radiology system provides cancer treatment and proton radiography. The system includes an accelerator for producing an H.sup.- beam and a laser source for generating a laser beam. A photodetachment module is located proximate the periphery of the accelerator. The photodetachment module combines the H.sup.- beam and laser beam to produce a neutral beam therefrom within a subsection of the H.sup.- beam. The photodetachment module emits the neutral beam along a trajectory defined by the laser beam. The photodetachment module includes a stripping foil which forms a proton beam from the neutral beam. The proton beam is delivered to a conveyance segment which transports the proton beam to a patient treatment station. The photodetachment module further includes a laser scanner which moves the laser beam along a path transverse to the cross-section of the H.sup.- beam in order to form the neutral beam in subsections of the H.sup.- beam. As the scanning laser moves across the H.sup.- beam, it similarly varies the trajectory of the proton beam emitted from the photodetachment module and in turn varies the target location of the proton beam upon the patient. Intensity modulation of the proton beam can also be achieved by controlling the output of the laser.

  4. Method to render second order beam optics programs symplectic

    SciTech Connect

    Douglas, D.; Servranckx, R.V.

    1984-10-01

    We present evidence that second order matrix-based beam optics programs violate the symplectic condition. A simple method to avoid this difficulty, based on a generating function approach to evaluating transfer maps, is described. A simple example illustrating the non-symplectricity of second order matrix methods, and the effectiveness of our solution to the problem, is provided. We conclude that it is in fact possible to bring second order matrix optics methods to a canonical form. The procedure for doing so has been implemented in the program DIMAT, and could be implemented in programs such as TRANSPORT and TURTLE, making them useful in multiturn applications. 15 refs.

  5. A hybrid electron cyclotron resonance metal ion source with integrated sputter magnetron for the production of an intense Al{sup +} ion beam

    SciTech Connect

    Weichsel, T. Hartung, U.; Kopte, T.; Zschornack, G.; Kreller, M.; Philipp, A.

    2015-09-15

    A metal ion source prototype has been developed: a combination of magnetron sputter technology with 2.45 GHz electron cyclotron resonance (ECR) ion source technology—a so called magnetron ECR ion source (MECRIS). An integrated ring-shaped sputter magnetron with an Al target is acting as a powerful metal atom supply in order to produce an intense current of singly charged metal ions. Preliminary experiments show that an Al{sup +} ion current with a density of 167 μA/cm{sup 2} is extracted from the source at an acceleration voltage of 27 kV. Spatially resolved double Langmuir probe measurements and optical emission spectroscopy were used to study the plasma states of the ion source: sputter magnetron, ECR, and MECRIS plasma. Electron density and temperature as well as Al atom density were determined as a function of microwave and sputter magnetron power. The effect of ECR heating is strongly pronounced in the center of the source. There the electron density is increased by one order of magnitude from 6 × 10{sup 9} cm{sup −3} to 6 × 10{sup 10} cm{sup −3} and the electron temperature is enhanced from about 5 eV to 12 eV, when the ECR plasma is ignited to the magnetron plasma. Operating the magnetron at constant power, it was observed that its discharge current is raised from 1.8 A to 4.8 A, when the ECR discharge was superimposed with a microwave power of 2 kW. At the same time, the discharge voltage decreased from about 560 V to 210 V, clearly indicating a higher plasma density of the MECRIS mode. The optical emission spectrum of the MECRIS plasma is dominated by lines of excited Al atoms and shows a significant contribution of lines arising from singly ionized Al. Plasma emission photography with a CCD camera was used to prove probe measurements and to identify separated plasma emission zones originating from the ECR and magnetron discharge.

  6. A hybrid electron cyclotron resonance metal ion source with integrated sputter magnetron for the production of an intense Al⁺ ion beam.

    PubMed

    Weichsel, T; Hartung, U; Kopte, T; Zschornack, G; Kreller, M; Philipp, A

    2015-09-01

    A metal ion source prototype has been developed: a combination of magnetron sputter technology with 2.45 GHz electron cyclotron resonance (ECR) ion source technology-a so called magnetron ECR ion source (MECRIS). An integrated ring-shaped sputter magnetron with an Al target is acting as a powerful metal atom supply in order to produce an intense current of singly charged metal ions. Preliminary experiments show that an Al(+) ion current with a density of 167 μA/cm(2) is extracted from the source at an acceleration voltage of 27 kV. Spatially resolved double Langmuir probe measurements and optical emission spectroscopy were used to study the plasma states of the ion source: sputter magnetron, ECR, and MECRIS plasma. Electron density and temperature as well as Al atom density were determined as a function of microwave and sputter magnetron power. The effect of ECR heating is strongly pronounced in the center of the source. There the electron density is increased by one order of magnitude from 6 × 10(9) cm(-3) to 6 × 10(10) cm(-3) and the electron temperature is enhanced from about 5 eV to 12 eV, when the ECR plasma is ignited to the magnetron plasma. Operating the magnetron at constant power, it was observed that its discharge current is raised from 1.8 A to 4.8 A, when the ECR discharge was superimposed with a microwave power of 2 kW. At the same time, the discharge voltage decreased from about 560 V to 210 V, clearly indicating a higher plasma density of the MECRIS mode. The optical emission spectrum of the MECRIS plasma is dominated by lines of excited Al atoms and shows a significant contribution of lines arising from singly ionized Al. Plasma emission photography with a CCD camera was used to prove probe measurements and to identify separated plasma emission zones originating from the ECR and magnetron discharge. PMID:26429434

  7. Influence of beam radii on a common-path compensation method for laser beam drifts in laser collimation systems

    NASA Astrophysics Data System (ADS)

    Zhao, Yuqiong; Feng, Qibo; Zhang, Bin; Cui, Cunxing

    2016-08-01

    The laser beam drift is a main factor that influences laser collimation measurement accuracies. In such measurements, the common-path compensation method is an efficient way to eliminate errors which are normally produced by the laser beam drift. Based on our current common-path compensation system, compensations for the laser beam drift were studied by different laser beam radii and detectors. The measurements have shown that the compensation effect for 3 mm beam radius is better than the ones of 1.5 mm and 4.0 mm beam radii. Based on this, the ratio between the 3 mm beam radius and the total area of the quadrant detector, which is 36%, has indicated the best compensation effect.

  8. A Green's function method for heavy ion beam transport

    NASA Technical Reports Server (NTRS)

    Shinn, J. L.; Wilson, J. W.; Schimmerling, W.; Shavers, M. R.; Miller, J.; Benton, E. V.; Frank, A. L.; Badavi, F. F.

    1995-01-01

    The use of Green's function has played a fundamental role in transport calculations for high-charge high-energy (HZE) ions. Two recent developments have greatly advanced the practical aspects of implementation of these methods. The first was the formulation of a closed-form solution as a multiple fragmentation perturbation series. The second was the effective summation of the closed-form solution through nonperturbative techniques. The nonperturbative methods have been recently extended to an inhomogeneous, two-layer transport media to simulate the lead scattering foil present in the Lawrence Berkeley Laboratories (LBL) biomedical beam line used for cancer therapy. Such inhomogeneous codes are necessary for astronaut shielding in space. The transport codes utilize the Langley Research Center atomic and nuclear database. Transport code and database evaluation are performed by comparison with experiments performed at the LBL Bevalac facility using 670 A MeV 20Ne and 600 A MeV 56Fe ion beams. The comparison with a time-of-flight and delta E detector measurement for the 20Ne beam and the plastic nuclear track detectors for 56Fe show agreement up to 35%-40% in water and aluminium targets, respectively.

  9. A Green's function method for heavy ion beam transport.

    PubMed

    Shinn, J L; Wilson, J W; Schimmerling, W; Shavers, M R; Miller, J; Benton, E V; Frank, A L; Badavi, F F

    1995-08-01

    The use of Green's function has played a fundamental role in transport calculations for high-charge high-energy (HZE) ions. Two recent developments have greatly advanced the practical aspects of implementation of these methods. The first was the formulation of a closed-form solution as a multiple fragmentation perturbation series. The second was the effective summation of the closed-form solution through nonperturbative techniques. The nonperturbative methods have been recently extended to an inhomogeneous, two-layer transport media to simulate the lead scattering foil present in the Lawrence Berkeley Laboratories (LBL) biomedical beam line used for cancer therapy. Such inhomogeneous codes are necessary for astronaut shielding in space. The transport codes utilize the Langley Research Center atomic and nuclear database. Transport code and database evaluation are performed by comparison with experiments performed at the LBL Bevalac facility using 670 A MeV 20Ne and 600 A MeV 56Fe ion beams. The comparison with a time-of-flight and delta E detector measurement for the 20Ne beam and the plastic nuclear track detectors for 56Fe show agreement up to 35%-40% in water and aluminium targets, respectively. PMID:7480630

  10. Laser beam apparatus and method for analyzing solar cells

    DOEpatents

    Staebler, David L.

    1980-01-01

    A laser beam apparatus and method for analyzing, inter alia, the current versus voltage curve at the point of illumination on a solar cell and the open circuit voltage of a solar cell. The apparatus incorporates a lock-in amplifier, and a laser beam light chopper which permits the measurement of the AC current of the solar cell at an applied DC voltage at the position on the solar cell where the cell is illuminated and a feedback scheme which permits the direct scanning measurements of the open circuit voltage. The accuracy of the measurement is a function of the intensity and wavelength of the laser light with respect to the intensity and wavelength distribution of sunlight and the percentage the dark current is at the open circuit voltage to the short circuit current of the solar cell.

  11. Fast multiscale Gaussian beam methods for wave equations in bounded convex domains

    SciTech Connect

    Bao, Gang; Lai, Jun; Qian, Jianliang

    2014-03-15

    Motivated by fast multiscale Gaussian wavepacket transforms and multiscale Gaussian beam methods which were originally designed for pure initial-value problems of wave equations, we develop fast multiscale Gaussian beam methods for initial boundary value problems of wave equations in bounded convex domains in the high frequency regime. To compute the wave propagation in bounded convex domains, we have to take into account reflecting multiscale Gaussian beams, which are accomplished by enforcing reflecting boundary conditions during beam propagation and carrying out suitable reflecting beam summation. To propagate multiscale beams efficiently, we prove that the ratio of the squared magnitude of beam amplitude and the beam width is roughly conserved, and accordingly we propose an effective indicator to identify significant beams. We also prove that the resulting multiscale Gaussian beam methods converge asymptotically. Numerical examples demonstrate the accuracy and efficiency of the method.

  12. Graphene: the ultimately thin sputtering shield

    NASA Astrophysics Data System (ADS)

    Herbig, Charlotte; Michely, Thomas

    2016-06-01

    Scanning tunneling microscopy methods are applied to investigate the potential of monolayer graphene as a sputtering shield for the underlying metal substrate. To visualize the effect, a bare and a graphene protected Ir(111) surface are irradiated with 500 eV Xe+, as well as 200 eV Xe+ and Ar+ ions, all at 1000 K. By quantitatively evaluating the sputtered material from the surface vacancy island area, we find a drastic decrease in metal sputtering for the graphene protected surface. It is demonstrated that efficient sputter protection relies on self-repair of the ion damage in graphene, which takes place efficiently in the temperature range of chemical vapor deposition growth. Based on the generality of the underlying principles of ion damage, graphene self-repair, and graphene growth, we speculate that efficient sputter protection is possible for a broad range of metals and alloys.

  13. A geometric calibration method for cone beam CT systems

    SciTech Connect

    Yang, Kai; Kwan, Alexander L. C.; Miller, DeWitt F.; Boone, John M.

    2006-06-15

    Cone beam CT systems are being deployed in large numbers for small animal imaging, dental imaging, and other specialty applications. A new high-precision method for cone beam CT system calibration is presented in this paper. It uses multiple projection images acquired from rotating point-like objects (metal ball bearings) and the angle information generated from the rotating gantry system is also used. It is assumed that the whole system has a mechanically stable rotation center and that the detector does not have severe out-of-plane rotation (<2 deg.). Simple geometrical relationships between the orbital paths of individual BBs and five system parameters were derived. Computer simulations were employed to validate the accuracy of this method in the presence of noise. Equal or higher accuracy was achieved compared with previous methods. This method was implemented for the geometrical calibration of both a micro CT scanner and a breast CT scanner. The reconstructed tomographic images demonstrated that the proposed method is robust and easy to implement with high precision.

  14. Indirect Methods For Nuclear Astrophysics With Radioactive Nuclear Beams

    SciTech Connect

    Trache, Livius

    2010-03-01

    For a good understanding of nucleosynthesis and energy production in stars through reliable modeling, we need nuclear data. To obtain them is the goal of nuclear physics for astrophysics, using direct and indirect measurements. In this lecture indirect methods for nuclear astrophysics are reviewed. In particular, methods applied to extract reaction rates for H-burning in stars are treated. The Coulomb dissociation is first briefly touched, for completeness. Then I go to one-nucleon transfer reactions (the ANC method), breakup reactions at intermediate energies and decay spectroscopy (beta-decay and beta-delayed proton-decay). They involve the use of radioactive nuclear beams. I chose for exemplification different experiments of our Texas A and M group, each involving a different method. The experiments were done at large energies to extract selected nuclear structure information. That is in turn used to evaluate the cross sections at low energies and the reaction rates for nuclear astrophysics. I will show the specificities of each method, their complementarities and redundancies, insisting on their peculiarities when used with radioactive beams.

  15. Cu2O/ZnO Heterojunction Solar Cells Fabricated by Magnetron-Sputter Deposition Method Films Using Sintered Ceramics Targets

    NASA Astrophysics Data System (ADS)

    Noda, S.; Shima, H.; Akinaga, H.

    2013-04-01

    Cu2O/ZnO heterojucntion solar cells were successfully obtained by a magnetron-sputter deposition method. The Cu2O thin film was deposited by the method using a sintered Cu2O ceramics target. Crystalline phases of the films were controlled by adjusting an O2 flow rate ratio (O2/(Ar+O2)) precisely during the sputtering process and Cu2O single phase polycrystalline films were obtained at room temperature. The Cu2O films qualities were improved by a rapid thermal annealing for 30 s in an Ar atmosphere of 1 atm. Hall mobility, carrier density, and resistivity of annealed films reached the values of 16.6 cm2/V/s, 3.5×1015 cm-3, and 107 Ωcm at 600 °C, respectively. The conversion efficiency of the Cu2O/ZnO heterojucntion solar cell was 0.24 % with the open circuit voltage of 0.69 V.

  16. Mixed composition materials suitable for vacuum web sputter coating

    NASA Technical Reports Server (NTRS)

    Banks, Bruce A.; Rutledge, Sharon K.; Dever, Joyce A.; Bruckner, Eric J.; Walters, Patricia; Hambourger, Paul D.

    1996-01-01

    Ion beam sputter deposition techniques were used to investigate simultaneous sputter etching of two component targets so as to produce mixed composition films. Although sputter deposition has been largely confined to metals and metal oxides, at least one polymeric material, poly-tetra-fluorethylene, has been demonstrated to produce sputtered fragments which repolymerize upon deposition to produce a highly cross-linked fluoropolymer resembling that of the parent target Fluoropolymer-filled silicon dioxide and fluoropolymer-filled aluminum oxide coatings have been deposited by means of ion beam sputter coat deposition resulting in films having material properties suitable for aerospace and commercial applications. The addition of fluoropolymer to silicon dioxide films was found to increase the hydrophobicity of the resulting mixed films; however, adding fluoropolymer to aluminum oxide films resulted in a reduction in hydrophobicity, thought to be caused by aluminum fluoride formation.

  17. Method and system for treating an interior surface of a workpiece using a charged particle beam

    DOEpatents

    Swenson, David Richard

    2007-05-23

    A method and system of treating an interior surface on an internal cavity of a workpiece using a charged particle beam. A beam deflector surface of a beam deflector is placed within the internal cavity of the workpiece and is used to redirect the charged particle beam toward the interior surface to treat the interior surface.

  18. Electron-Beam Diagnostic Methods for Hypersonic Flow Diagnostics

    NASA Technical Reports Server (NTRS)

    1994-01-01

    The purpose of this work was the evaluation of the use of electron-bean fluorescence for flow measurements during hypersonic flight. Both analytical and numerical models were developed in this investigation to evaluate quantitatively flow field imaging concepts based upon the electron beam fluorescence technique for use in flight research and wind tunnel applications. Specific models were developed for: (1) fluorescence excitation/emission for nitrogen, (2) rotational fluorescence spectrum for nitrogen, (3) single and multiple scattering of electrons in a variable density medium, (4) spatial and spectral distribution of fluorescence, (5) measurement of rotational temperature and density, (6) optical filter design for fluorescence imaging, and (7) temperature accuracy and signal acquisition time requirements. Application of these models to a typical hypersonic wind tunnel flow is presented. In particular, the capability of simulating the fluorescence resulting from electron impact ionization in a variable density nitrogen or air flow provides the capability to evaluate the design of imaging instruments for flow field mapping. The result of this analysis is a recommendation that quantitative measurements of hypersonic flow fields using electron-bean fluorescence is a tractable method with electron beam energies of 100 keV. With lower electron energies, electron scattering increases with significant beam divergence which makes quantitative imaging difficult. The potential application of the analytical and numerical models developed in this work is in the design of a flow field imaging instrument for use in hypersonic wind tunnels or onboard a flight research vehicle.

  19. Beam splitter and method for generating equal optical path length beams

    DOEpatents

    Qian, Shinan; Takacs, Peter

    2003-08-26

    The present invention is a beam splitter for splitting an incident beam into first and second beams so that the first and second beams have a fixed separation and are parallel upon exiting. The beam splitter includes a first prism, a second prism, and a film located between the prisms. The first prism is defined by a first thickness and a first perimeter which has a first major base. The second prism is defined by a second thickness and a second perimeter which has a second major base. The film is located between the first major base and the second major base for splitting the incident beam into the first and second beams. The first and second perimeters are right angle trapezoidal shaped. The beam splitter is configured for generating equal optical path length beams.

  20. A hydrogen ion beam method of molecular density measurement inside a 4.2-K beam tube

    SciTech Connect

    Alinovsky, N.; Anashin, V.; Beschasny, P.

    1994-06-01

    In our first experiments on synchrotron radiation-induced photodesorption in a 4.2-K beam tube, the moleculm density was measured by room temperature ion gauges and RGAs outside the beam tube. The molecular density inside the 4.2-K beam tube was therefore unknown, since the mean molecular speed of photodesorbed molecules had not been measured. To determine the density inside the 4.2-K beam tube we have developed a direct method of measurement utilizing the neutralization of H{sup +} beams, which are proportional to gas density. The hydrogen ion beams (up to 20 keV, {approximately}1 {mu}A) are extracted from an rf ion source and guided into the cold beam tube by a bending magnet. The H{sup 0} and H{sup {minus}} produced in the beam tube are magnetically separated from H{sup {minus}} and detected with secondary electron multipliers (SEMs). Small superconducting dipole magnets located near the center of the beam tube allow a {approximately}20-cm segment of the injected ion beam to be offset a few mm from the injection axis; detection of H{sup 0} and H{sup {minus}} produced along this offset segment provides a localized density measurement. If necessary, detector background due to synchrotron radiation photons can be discriminated against by gating the detector on between the bursts of synchrotron radiation. The experimental setup and initial data will be presented.

  1. An investigation of acoustic beam patterns for the sonar localization problem using a beam based method.

    PubMed

    Guarato, Francesco; Windmill, James; Gachagan, Anthony; Harvey, Gerald

    2013-06-01

    Target localization can be accomplished through an ultrasonic sonar system equipped with an emitter and two receivers. Time of flight of the sonar echoes allows the calculation of the distance of the target. The orientation can be estimated from knowledge of the beam pattern of the receivers and the ratio, in the frequency domain, between the emitted and the received signals after compensation for distance effects and air absorption. The localization method is described and, as its performance strongly depends on the beam pattern, the search of the most appropriate sonar receiver in order to ensure the highest accuracy of target orientation estimations is developed in this paper. The structure designs considered are inspired by the ear shapes of some bat species. Parameters like flare rate, truncation angle, and tragus are considered in the design of the receiver structures. Simulations of the localization method allow us to state which combination of those parameters could provide the best real world implementation. Simulation results show the estimates of target orientations are, in the worst case, 2° with SNR = 50 dB using the receiver structure chosen for a potential practical implementation of a sonar system.

  2. Advanced methods for the computation of particle beam transport and the computation of electromagnetic fields and beam-cavity interactions

    SciTech Connect

    Dragt, A.J.; Gluckstern, R.L.

    1990-11-01

    The University of Maryland Dynamical Systems and Accelerator Theory Group carries out research in two broad areas: the computation of charged particle beam transport using Lie algebraic methods and advanced methods for the computation of electromagnetic fields and beam-cavity interactions. Important improvements in the state of the art are believed to be possible in both of these areas. In addition, applications of these methods are made to problems of current interest in accelerator physics including the theoretical performance of present and proposed high energy machines. The Lie algebraic method of computing and analyzing beam transport handles both linear and nonlinear beam elements. Tests show this method to be superior to the earlier matrix or numerical integration methods. It has wide application to many areas including accelerator physics, intense particle beams, ion microprobes, high resolution electron microscopy, and light optics. With regard to the area of electromagnetic fields and beam cavity interactions, work is carried out on the theory of beam breakup in single pulses. Work is also done on the analysis of the high behavior of longitudinal and transverse coupling impendances, including the examination of methods which may be used to measure these impedances. Finally, work is performed on the electromagnetic analysis of coupled cavities and on the coupling of cavities to waveguides.

  3. Comparison of the Sputter Rates of Oxide Films Relative to the Sputter Rate of SiO2

    SciTech Connect

    Baer, Donald R.; Engelhard, Mark H.; Lea, Alan S.; Nachimuthu, Ponnusamy; Droubay, Timothy C.; Kim, J.; Lee, B.; Mathews, C.; Opila, R. L.; Saraf, Laxmikant V.; Stickle, William F.; Wallace, Robert; Wright, B. S.

    2010-09-02

    Because of the increasing technological importance of oxide films for a variety of applications, there is a growing interest in knowing the sputter rates for a wide variety of oxides. To support needs of users of the Environmental Molecular Sciences Laboratory (EMSL) User facility as well as our research programs, we have made a series of measurements of the sputter rates for oxide films that have been grown by oxygen plasma assisted molecular beam epitaxy (OPA-MBE), pulsed laser deposition (PLD), Atomic Layer Deposition (ALD), electrochemical oxidation, or sputter deposition. The sputter rates for these oxide films were determined in comparison to the sputter rates for thermally grown SiO2, a common sputter rate reference material. The film thicknesses and densities of these films were usually measured using x-ray reflectivity (XRR). These samples were mounted in an x-ray photoelectron spectroscopy (XPS) system or an Auger electron spectrometer for sputtering measurements using argon ion sputtering. Although the primary objective was to determine relative sputter rates at a fixed angle, the measurements were also used to determine: i) the angle dependence of the relative sputter rates; ii) the energy dependence of the relative sputter rates; and iii) the extent of ion beam reduction for the various oxides. Materials examined include: SiO2 (reference films), Al2O3, CeO2, Cr2O3, Fe2O3, HfO2, ITO (In-Sn-oxide) Ta2O5, TiO2 (anatase and rutile) and ZnO. We find that the sputter rates for the oxides can vary up to a factor of two (usually slower) from that observed for SiO2. The ratios of sputter rates to SiO2 appear to be relatively independent of ion beam energy for the range of 1kV to 4 kV and for incident angles of less than 50º. As expected, the ion beam reduction of the oxides varies with the sputter angle. These studies demonstrate that we can usually obtain sputter rate reproducibility better than 5% for similar oxide films.

  4. Sputter deposition for multi-component thin films

    DOEpatents

    Krauss, Alan R.; Auciello, Orlando

    1990-01-01

    Ion beam sputter-induced deposition using a single ion beam and a multicomponent target is capable of reproducibly producing thin films of arbitrary composition, including those which are close to stoichiometry. Using a quartz crystal deposition monitor and a computer controlled, well-focused ion beam, this sputter-deposition approach is capable of producing metal oxide superconductors and semiconductors of the superlattice type such as GaAs-AlGaAs as well as layered metal/oxide/semiconductor/superconductor structures. By programming the dwell time for each target according to the known sputtering yield and desired layer thickness for each material, it is possible to deposit composite films from a well-controlled sub-monolayer up to thicknesses determined only by the available deposition time. In one embodiment, an ion beam is sequentially directed via a set of X-Y electrostatic deflection plates onto three or more different element or compound targets which are constituents of the desired film. In another embodiment, the ion beam is directed through an aperture in the deposition plate and is displaced under computer control to provide a high degree of control over the deposited layer. In yet another embodiment, a single fixed ion beam is directed onto a plurality of sputter targets in a sequential manner where the targets are each moved in alignment with the beam under computer control in forming a multilayer thin film. This controlled sputter-deposition approach may also be used with laser and electron beams.

  5. Sputter deposition for multi-component thin films

    DOEpatents

    Krauss, A.R.; Auciello, O.

    1990-05-08

    Ion beam sputter-induced deposition using a single ion beam and a multicomponent target is capable of reproducibly producing thin films of arbitrary composition, including those which are close to stoichiometry. Using a quartz crystal deposition monitor and a computer controlled, well-focused ion beam, this sputter-deposition approach is capable of producing metal oxide superconductors and semiconductors of the superlattice type such as GaAs-AlGaAs as well as layered metal/oxide/semiconductor/superconductor structures. By programming the dwell time for each target according to the known sputtering yield and desired layer thickness for each material, it is possible to deposit composite films from a well-controlled sub-monolayer up to thicknesses determined only by the available deposition time. In one embodiment, an ion beam is sequentially directed via a set of X-Y electrostatic deflection plates onto three or more different element or compound targets which are constituents of the desired film. In another embodiment, the ion beam is directed through an aperture in the deposition plate and is displaced under computer control to provide a high degree of control over the deposited layer. In yet another embodiment, a single fixed ion beam is directed onto a plurality of sputter targets in a sequential manner where the targets are each moved in alignment with the beam under computer control in forming a multilayer thin film. This controlled sputter-deposition approach may also be used with laser and electron beams. 10 figs.

  6. Synthesis and characterization of pure anatase phase nanocrystalline TiO2 thin film by magnetron sputtering method

    NASA Astrophysics Data System (ADS)

    Pawar, Nimisha; Bhargava, Ankita; Dayal, Saurabh; Kumar, C. Sasi

    2016-05-01

    In present work, our focus is to deposit anatase phase nanocrystalline TiO2 thin films. In order to prepare Titanium oxide films we first deposited Titanium thin films using DC magnetron sputtering and then the substrates were annealed in a muffle furnace at different temperatures. Further the samples were characterized for analysis of phase, morphology and optical properties using XRD, SEM, AFM and photoluminescence spectroscopy respectively. XRD shows the formation of tetragonal phase TiO2 with lattice parameters values a= 3.8 Å and c=9.6 Å. The surface roughness value of the films were found to vary from 1.6 nm to 15.9 nm. The grain size as estimated from AFM varies from 48 nm to 125 nm at different temperatures. Thus, the results revealed the formation of ultra-smooth anatase phase pure nanocrystalline TiO2 spherical particles.

  7. Device and method for electron beam heating of a high density plasma

    DOEpatents

    Thode, L.E.

    A device and method for relativistic electron beam heating of a high density plasma in a small localized region are described. A relativistic electron beam generator produces a high voltage electron beam which propagates along a vacuum drift tube and is modulated to initiate electron bunching within the beam. The beam is then directed through a low density gas chamber which provides isolation between the vacuum modulator and the relativistic electron beam target. The relativistic beam is then applied to a high density target plasma which typically comprises DT, DD, hydrogen boron or similar thermonuclear gas at a density of 10/sup 17/ to 10/sup 20/.

  8. Investigation of the biaxial stress of Al-doped ZnO thin films on a flexible substrate with RF magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Huang, Kuo-Ting; Chen, Hsi-Chao; Cheng, Po-Wei; Chang, Jhe-Ming

    2016-01-01

    Transparent conductive Al-doped ZnO (AZO) thin films were deposited onto poly(ethylene terephthalate) (PET) substrate, using the radio frequency (RF) magnetron sputtering method. The residual stress of flexible electronics was investigated by a double beam shadow moiré interferometer with phase shifting interferometry (PSI). Moreover, the biaxial stress of AZO thin films can be graphically represented by using Mohr’s circle of stress. The residual stress of AZO thin films becomes more compressive with the increase in sputtering power. The maximum residual stress is -1115.74 MPa, and the shearing stress is 490.57 MPa at a sputtering power of 200 W. The trends of residual stress were evidenced by the X-ray diffraction (XRD) patterns and optical properties of AZO thin films. According to the evaluation results of the refractive index and the extinction coefficient, the AZO thin films have better quality when the sputtering power less than 100 W.

  9. Method and apparatus for timing of laser beams in a multiple laser beam fusion system

    DOEpatents

    Eastman, Jay M.; Miller, Theodore L.

    1981-01-01

    The optical path lengths of a plurality of comparison laser beams directed to impinge upon a common target from different directions are compared to that of a master laser beam by using an optical heterodyne interferometric detection technique. The technique consists of frequency shifting the master laser beam and combining the master beam with a first one of the comparison laser beams to produce a time-varying heterodyne interference pattern which is detected by a photo-detector to produce an AC electrical signal indicative of the difference in the optical path lengths of the two beams which were combined. The optical path length of this first comparison laser beam is adjusted to compensate for the detected difference in the optical path lengths of the two beams. The optical path lengths of all of the comparison laser beams are made equal to the optical path length of the master laser beam by repeating the optical path length adjustment process for each of the comparison laser beams. In this manner, the comparison laser beams are synchronized or timed to arrive at the target within .+-.1.times.10.sup.-12 second of each other.

  10. Design method for four-reflector type beam waveguide systems

    NASA Technical Reports Server (NTRS)

    Betsudan, S.; Katagi, T.; Urasaki, S.

    1986-01-01

    Discussed is a method for the design of four reflector type beam waveguide feed systems, comprised of a conical horn and 4 focused reflectors, which are used widely as the primary reflector systems for communications satellite Earth station antennas. The design parameters for these systems are clarified, the relations between each parameter are brought out based on the beam mode development, and the independent design parameters are specified. The characteristics of these systems, namely spillover loss, crosspolarization components, and frequency characteristics, and their relation to the design parameters, are also shown. It is also indicated that design parameters which decide the dimensions of the conical horn or the shape of the focused reflectors can be unerringly established once the design standard for the system has been selected as either: (1) minimizing the crosspolarization component by keeping the spillover loss to within acceptable limits, or (2) minimizing the spillover loss by maintaining the crossover components below an acceptable level and the independent design parameters, such as the respective sizes of the focused reflectors and the distances between the focussed reflectors, etc., have been established according to mechanical restrictions. A sample design is also shown. In addition to being able to clarify the effects of each of the design parameters on the system and improving insight into these systems, the efficiency of these systems will also be increased with this design method.

  11. Active Beam Shaping System and Method Using Sequential Deformable Mirrors

    NASA Technical Reports Server (NTRS)

    Norman, Colin A. (Inventor); Pueyo, Laurent A. (Inventor)

    2015-01-01

    An active optical beam shaping system includes a first deformable mirror arranged to at least partially intercept an entrance beam of light and to provide a first reflected beam of light, a second deformable mirror arranged to at least partially intercept the first reflected beam of light from the first deformable mirror and to provide a second reflected beam of light, and a signal processing and control system configured to communicate with the first and second deformable mirrors. The first deformable mirror, the second deformable mirror and the signal processing and control system together provide a large amplitude light modulation range to provide an actively shaped optical beam.

  12. Split-step non-paraxial beam propagation method

    NASA Astrophysics Data System (ADS)

    Sharma, Anurag; Agrawal, Arti

    2004-06-01

    A new method for solving the wave equation is presented, which, being non-paraxial, is applicable to wide-angle beam propagation. It shows very good stability characteristics in the sense that relatively larger step-sizes can be used. It is both faster and easier to implement. The method is based on symmetrized splitting of operators, one representing the propagation through a uniform medium and the other, the effect of the refractive index variation of the guiding structure. The method can be implemented in the FD-BPM, FFT-BPM and collocation schemes. The method is stable for a step size of 1 micron in a graded index waveguide with accuracy better than 0.001 in the field overlap integral for 1000-micron propagation. At a tilt angle of 50°, the method shows an error less than 0.001 with 0.25-micron step. In the benchmark test, the present method shows a relative power of ~0.96 in a 100 micron long waveguide with 1000 propagation steps and 800 sample points, while FD-BPM with Pade(2,2) approximation gives a relative power of 0.95 with 1000 sample points and 2048 propagation steps. Thus, the method requires fewer points, is easier to implement, faster, more accurate and highly stable.

  13. Validation of the beam tracing method for heating and diagnostics

    SciTech Connect

    Maj, O.; Pereverzev, G. V.; Poli, E.

    2009-11-26

    The beam tracing approximate description of the propagation and absorption of wave beams is studied and compared to the corresponding exact solution of the wave equation for two simplified models relevant to electron cyclotron resonance heating and reflectometry diagnostics.

  14. Method and apparatus for efficient photodetachment and purification of negative ion beams

    DOEpatents

    Beene, James R [Oak Ridge, TN; Liu, Yuan [Knoxville, TN; Havener, Charles C [Knoxville, TN

    2008-02-26

    Methods and apparatus are described for efficient photodetachment and purification of negative ion beams. A method of purifying an ion beam includes: inputting the ion beam into a gas-filled multipole ion guide, the ion beam including a plurality of ions; increasing a laser-ion interaction time by collisional cooling the plurality of ions using the gas-filled multipole ion guide, the plurality of ions including at least one contaminant; and suppressing the at least one contaminant by selectively removing the at least one contaminant from the ion beam by electron photodetaching at least a portion of the at least one contaminant using a laser beam.

  15. A new method for beam stacking in storage rings

    SciTech Connect

    Bhat, C.M.; /Fermilab

    2008-06-01

    Recently, I developed a new beam stacking scheme for synchrotron storage rings called 'longitudinal phase-space coating' (LPSC). This scheme has been convincingly validated by multi-particle beam dynamics simulations and has been demonstrated with beam experiments at the Fermilab Recycler. Here, I present the results from both simulations and experiments. The beam stacking scheme presented here is the first of its kind.

  16. Method for changing the cross section of a laser beam

    DOEpatents

    Sweatt, William C.; Seppala, Lynn

    1995-01-01

    A technique is disclosed herein in which a circular optical beam, for example a copper vapor laser (CVL) beam, is converted to a beam having a profile other than circular, e.g. square or triangular. This is accomplished by utilizing a single optical mirror having a reflecting surface designed in accordance with a specifically derived formula in order to make the necessary transformation, without any substantial light loss and without changing substantially the intensity profile of the circular beam which has a substantially uniform intensity profile. In this way, the output beam can be readily directed into the dye cell of a dye laser.

  17. Method for changing the cross section of a laser beam

    DOEpatents

    Sweatt, W.C.; Seppala, L.

    1995-12-05

    A technique is disclosed herein in which a circular optical beam, for example a copper vapor laser (CVL) beam, is converted to a beam having a profile other than circular, e.g. square or triangular. This is accomplished by utilizing a single optical mirror having a reflecting surface designed in accordance with a specifically derived formula in order to make the necessary transformation, without any substantial light loss and without changing substantially the intensity profile of the circular beam which has a substantially uniform intensity profile. In this way, the output beam can be readily directed into the dye cell of a dye laser. 4 figs.

  18. Formation and optical properties of fluorescent gold nanoparticles obtained by matrix sputtering method with volatile mercaptan molecules in the vacuum chamber and consideration of their structures.

    PubMed

    Sumi, Taiki; Motono, Shingo; Ishida, Yohei; Shirahata, Naoto; Yonezawa, Tetsu

    2015-04-14

    This paper proposes a novel methodology to synthesize highly fluorescent gold nanoparticles (NPs) with a maximum quantum yield of 16%, in the near-infrared (IR) region. This work discusses the results of using our (previously developed) matrix sputtering method to introduce mercaptan molecules, α-thioglycerol, inside the vacuum sputtering chamber, during the synthesis of metal NPs. The evaporation of α-thioglycerol inside the chamber enables to coordinate to the "nucleation stage" very small gold nanoclusters in the gas phase, thus retaining their photophysical characteristics. As observed through transmission electron microscopy, the size of the Au NPs obtained with the addition of α-thioglycerol varied from approximately 2-3 nm to approximately 5 nm. Plasmon absorption varied with the size of the resultant nanoparticles. Thus, plasmon absorption was observed at 2.4 eV in the larger NPs. However, it was not observed, and instead a new peak was found at approximately 3.4 eV, in the smaller NPs that resulted from the introduction of α-thioglycerol. The Au NPs stabilized by the α-thioglycerol fluoresced at approximately 1.8 eV, and the maximum wavelength shifted toward the red, in accordance with the size of the NPs. A maximum fluorescent quantum yield of 16% was realized under the optimum conditions, and this value is extremely high compared to values previously reported on gold NPs and clusters (generally ∼1%). To our knowledge, however, Au NPs of size >2 nm usually do not show strong fluorescence. By comparison with results reported in previous literature, it was concluded that these highly fluorescent Au NPs consist of gold-mercaptan complexes. The novel method presented in this paper therefore opens a new door for the effective control of size, photophysical characteristics, and structure of metal NPs. It is hoped that this research contributes significantly to the science in this field.

  19. Moving receive beam method and apparatus for synthetic aperture radar

    DOEpatents

    Kare, Jordin T.

    2001-01-01

    A method and apparatus for improving the performance of Synthetic Aperture Radar (SAR) systems by reducing the effect of "edge losses" associated with nonuniform receiver antenna gain. By moving the receiver antenna pattern in synchrony with the apparent motion of the transmitted pulse along the ground, the maximum available receiver antenna gain can be used at all times. Also, the receiver antenna gain for range-ambiguous return signals may be reduced, in some cases, by a large factor. The beam motion can be implemented by real-time adjustment of phase shifters in an electronically-steered phased-array antenna or by electronic switching of feed horns in a reflector antenna system.

  20. METHOD OF PRODUCING AND ACCELERATING AN ION BEAM

    NASA Technical Reports Server (NTRS)

    Foster, John E. (Inventor)

    2005-01-01

    A method of producing and accelerating an ion beam comprising the steps of providing a magnetic field with a cusp that opens in an outward direction along a centerline that passes through a vertex of the cusp: providing an ionizing gas that sprays outward through at least one capillary-like orifice in a plenum that is positioned such that the orifice is on the centerline in the cusp, outward of the vortex of the cusp; providing a cathode electron source, and positioning it outward of the orifice and off of the centerline; and positively charging the plenum relative to the cathode electron source such that the plenum functions as m anode. A hot filament may be used as the cathode electron source, and permanent magnets may be used to provide the magnetic field.

  1. Simulation of nanoindentation experiment on RF magnetron sputtered nanocolumnar V2O5 film using finite element method

    NASA Astrophysics Data System (ADS)

    Porwal, Deeksha; Gupta, A. K.; Pillai, Anju M.; Sharma, Anand Kumar; Mukhopadhyay, Anoop Kumar; Khan, Kallol; Dey, Arjun

    2016-07-01

    The present work reports the nanomechanical behavior of a pulsed radio frequency (RF) magnetron sputtered vanadium pentoxide (V2O5) film deposited on silicon (Si) substrate using a combination of nanoindentation experiments and a finite element model (FEM). Deposited V2O5 film is characterized by x-ray diffraction (XRD), nanoprofilometry, field emission scanning electron microscopy (FESEM), nanoindentation and FEM. The phase pure 6.16 μm V2O5 film shows a nanocolumnar structure. The film exhibits nanohardness (H) of 0.16 ± 0.013 GPa and Young’s modulus (E) of about 12.05 ± 1.41 GPa. The FEM reproduces experimentally obtained load versus depth (P-h) plot and subsequently give yield stress and strain hardening component data of V2O5 film on Si substrate. Stress-strain behavior and von-Mises stress distribution of the V2O5 film with Si substrate system are also simulated. The FE model confirms the local maximum equivalent stress active underneath the nanoindenters to be nearly twice as high as the yield stress and thereby explains the plastic deformation observed in the V2O5 film.

  2. Studies of ion sputtered silicon(111) surfaces

    NASA Astrophysics Data System (ADS)

    Brown, Ari-David

    A comprehensive study of morphological evolution of regular features formed on ion sputtered Si(111) surfaces was conducted. The physics governing feature formation was clarified, and the varieties of morphologies formed on these surfaces were explored. Energetic Ar+ ions directed at an oblique angle of incidence were used to sputter etch heated Si(111) substrates inside of an ultra-high vacuum chamber. Self-organization of highly regular sputter ripples possessing sub-micron lengthscales was observed, using in situ UV light scattering spectroscopy and ex situ atomic force microscopy techniques. Distinct rippling morphologies dependent upon ion fluence were produced on Si(111). For low fluence, the surface was characterized by highly ordered corrugations possessing wavevector parallel to the projected ion beam direction (parallel mode ripples). For high fluence, less highly ordered ripples possessing wavevector perpendicular to the ion beam (perpendicular mode ripples) dominated the morphology. At intermediate ion fluence, the surface morphology was best described as a quasi-rectangular array of sputter dots consisting of a superposition of both one-dimensional rippling modes. The transition between the two one-dimensional rippling morphologies occurred at higher fluence with increasing sample temperature or with decreasing ion flux. In addition, each ripple mode was observed to coarsen with increasing fluence. For low ion fluence, the surface evolution was explained using a standard linear theory of sputter rippling. An activation energy for adatom diffusion on Si(111) was extracted and found to equal 1.7 +/- 0.1 eV, and the steady-state adatom concentration was found to be of order 10% of surface sites. For high ion fluence, a kinetic Monte Carlo simulation incorporating a minimal model of sputter rippling was used to predict the formation of two mutually perpendicular ripple modes. The simulated surface also exhibited ripple coarsening, as a consequence

  3. Secondary growth mechanism of SiGe islands deposited on a mixed-phase microcrystalline Si by ion beam co-sputtering.

    PubMed

    Ke, S Y; Yang, J; Qiu, F; Wang, Z Q; Wang, C; Yang, Y

    2015-11-01

    We discuss the SiGe island co-sputtering deposition on a microcrystalline silicon (μc-Si) buffer layer and the secondary island growth based on this pre-SiGe island layer. The growth phenomenon of SiGe islands on crystalline silicon (c-Si) is also investigated for comparison. The pre-SiGe layer grown on μc-Si exhibits a mixed-phase structure, including SiGe islands and amorphous SiGe (a-SiGe) alloy, while the layer deposited on c-Si shows a single-phase island structure. The preferential growth and Ostwald ripening growth are shown to be the secondary growth mechanism of SiGe islands on μc-Si and c-Si, respectively. This difference may result from the effect of amorphous phase Si (AP-Si) in μc-Si on the island growth. In addition, the Si-Ge intermixing behavior of the secondary-grown islands on μc-Si is interpreted by constructing the model of lateral atomic migration, while this behavior on c-Si is ascribed to traditional uphill atomic diffusion. It is found that the aspect ratios of the preferential-grown super islands are higher than those of the Ostwald-ripening ones. The lower lateral growth rate of super islands due to the lower surface energy of AP-Si on the μc-Si buffer layer for the non-wetting of Ge at 700 °C and the stronger Si-Ge intermixing effect at 730 °C may be responsible for this aspect ratio difference.

  4. Means and method for the focusing and acceleration of parallel beams of charged particles

    DOEpatents

    Maschke, Alfred W.

    1983-07-05

    A novel apparatus and method for focussing beams of charged particles comprising planar arrays of electrostatic quadrupoles. The quadrupole arrays may comprise electrodes which are shared by two or more quadrupoles. Such quadrupole arrays are particularly adapted to providing strong focussing forces for high current, high brightness, beams of charged particles, said beams further comprising a plurality of parallel beams, or beamlets, each such beamlet being focussed by one quadrupole of the array. Such arrays may be incorporated in various devices wherein beams of charged particles are accelerated or transported, such as linear accelerators, klystron tubes, beam transport lines, etc.

  5. Method and apparatus for reducing coherence of high-power laser beams

    DOEpatents

    Moncur, Norman K.; Mayer, Frederick J.

    1978-01-01

    Method and apparatus for reducing the coherence and for smoothing the power density profile of a collimated high-power laser beam in which the beam is focused at a point on the surface of a target fabricated of material having a low atomic number. The initial portion of the focused beam heats the material to form a hot reflective plasma at the material surface. The remaining, major portion of the focused beam is reflected by the plasma and recollected to form a collimated beam having reduced beam coherence.

  6. Enhancement of exchange bias and training effect in ion-beam sputtered Fe{sub 46}Mn{sub 54}/Ni{sub 81}Fe{sub 19} bilayers

    SciTech Connect

    Fulara, Himanshu; Chaudhary, Sujeet Kashyap, Subhash C.; Granville, Simon

    2014-01-28

    We present a remarkable enhancement by 300% of the exchange-bias field at room temperature, without affecting the coercivity value, via optimum magnetic annealing (250 °C/3 kOe) in ion-beam sputtered FeMn(30 nm)/NiFe(10 nm) bilayers. This specific behavior has been attributed to a higher degree of γ-FeMn(111) orientation that offers more interfacial FeMn moments to get pinned with the moments of the adjacent NiFe layer. Unlike the absence of training effect at room temperature, a pronounced training effect and an accompanying magnetization reversal asymmetry are evidenced upon field cooling below 50 K due to the presence of biaxial exchange induced anisotropy across the interdiffused FeMn/NiFe interface. The present findings not only have technological significance but also are of relevance to the understanding of interfacial spin disorder and frustration in these exchange-biased systems.

  7. Low-damage high-throughput grazing-angle sputter deposition on graphene

    SciTech Connect

    Chen, C.-T.; Gajek, M.; Raoux, S.; Casu, E. A.

    2013-07-15

    Despite the prevalence of sputter deposition in the microelectronics industry, it has seen very limited applications for graphene electronics. In this letter, we report systematic investigation of the sputtering induced damages in graphene and identify the energetic sputtering gas neutrals as the primary cause of graphene disorder. We further demonstrate a grazing-incidence sputtering configuration that strongly suppresses fast neutral bombardment and retains graphene structure integrity, creating considerably lower damage than electron-beam evaporation. Such sputtering technique yields fully covered, smooth thin dielectric films, highlighting its potential for contact metals, gate oxides, and tunnel barriers fabrication in graphene device applications.

  8. Comparison of the sputter rates of oxide films relative to the sputter rate of SiO{sub 2}

    SciTech Connect

    Baer, D. R.; Engelhard, M. H.; Lea, A. S.; Nachimuthu, P.; Droubay, T. C.; Kim, J.; Lee, B.; Mathews, C.; Opila, R. L.; Saraf, L. V.; Stickle, W. F.; Wallace, R. M.; Wright, B. S.

    2010-09-15

    There is a growing interest in knowing the sputter rates for a wide variety of oxides because of their increasing technological importance in many different applications. To support the needs of users of the Environmental Molecular Sciences Laboratory, a national scientific user facility, as well as our research programs, the authors made a series of measurements of the sputter rates from oxide films that have been grown by oxygen plasma-assisted molecular beam epitaxy, pulsed laser deposition, atomic layer deposition, electrochemical oxidation, or sputter deposition. The sputter rates for these oxide films were determined in comparison with those from thermally grown SiO{sub 2}, a common reference material for sputter rate determination. The film thicknesses and densities for most of these oxide films were measured using x-ray reflectivity. These oxide films were mounted in an x-ray photoelectron or Auger electron spectrometer for sputter rate measurements using argon ion sputtering. Although the primary objective of this work was to determine relative sputter rates at a fixed angle, the measurements also examined (i) the angle dependence of the relative sputter rates, (ii) the energy dependence of the relative sputter rates, and (iii) the extent of ion beam induced reduction for some oxides. Oxide films examined include SiO{sub 2}, Al{sub 2}O{sub 3}, CeO{sub 2}, Cr{sub 2}O{sub 3}, Fe{sub 2}O{sub 3}, HfO{sub 2}, In-Sn oxide, Ta{sub 2}O{sub 5}, TiO{sub 2} (anatase, rutile, and amorphous), and ZnO. The authors found that the sputter rates for the oxides can vary up to a factor of 2 (usually lower) from that observed for SiO{sub 2}. The ratios of sputter rates relative to those of SiO{sub 2} appear to be relatively independent of ion beam energy in the range of 1-4 kV and for incident angles <50 deg. As expected, the extent of ion beam induced reduction of the oxides varies with the sputter angle.

  9. In vitro Cyto and Blood Compatibility of Titanium Containing Diamond-Like Carbon Prepared by Hybrid Sputtering Method

    NASA Astrophysics Data System (ADS)

    Krishnasamy Navaneetha, Pandiyaraj; Jan, Heeg; Andreas, Lampka; Fabian, Junge; Torsten, Barfels; Marion, Wienecke; Young, Ha Rhee; Hyoung, Woo Kim

    2012-09-01

    In recent years, diamond-like carbon films (DLC) have been given more attention in research in the biomedical industry due to their potential application as surface coating on biomedical materials such as metals and polymer substrates. There are many ways to prepare metal containing DLC films deposited on polymeric film substrates, such as coatings from carbonaceous precursors and some means that incorporate other elements. In this study, we investigated both the surface and biocompatible properties of titanium containing DLC (Ti-DLC) films. The Ti-DLC films were prepared on the surface of poly (ethylene terephthalate) (PET) film as a function of the deposition power level using reactive sputtering technique. The films' hydrophilicity was studied by contact angle and surface energy tests. Their surface morphology was studied by scanning electron microscopy (SEM) and atomic force microscopy (AFM). Their elemental chemical composition was analyzed using energy dispersive X-spectra (EDX) and X-ray photoelectron spectroscopy (XPS). Their blood and cell compatibility was studied by in vitro tests, including tests on platelet adhesion, thrombus formation, whole blood clotting time and osteoblast cell compatibility. Significant changes in the morphological and chemical composition of the Ti-DLC films were observed and found to be a function of the deposition level. These morphological and chemical changes reduced the interfacial tension between Ti-DLC and blood proteins as well as resisted the adhesion and activation of platelets on the surface of the Ti-DLC films. The cell compatibility results exhibited significant growth of osteoblast cells on the surface of Ti incorporated DLC film compared with that of DLC film surface.

  10. Sputtering of uranium

    NASA Technical Reports Server (NTRS)

    Gregg, R.; Tombrello, T. A.

    1978-01-01

    Results are presented for an experimental study of the sputtering of U-235 atoms from foil targets by hydrogen, helium, and argon ions, which was performed by observing tracks produced in mica by fission fragments following thermal-neutron-induced fission. The technique used allowed measurements of uranium sputtering yields of less than 0.0001 atom/ion as well as yields involving the removal of less than 0.01 monolayer of the uranium target surface. The results reported include measurements of the sputtering yields for 40-120-keV protons, 40-120-keV He-4(+) ions, and 40- and 80-keV Ar-40(+) ions, the mass distribution of chunks emitted during sputtering by the protons and 80-keV Ar-40(+) ions, the total chunk yield during He-4(+) sputtering, and some limited data on molecular sputtering by H2(+) and H3(+). The angular distribution of the sputtered uranium is discussed, and the yields obtained are compared with the predictions of collision cascade theory.

  11. Hollow metal target magnetron sputter type radio frequency ion source

    SciTech Connect

    Yamada, N. Kasuya, T.; Wada, M.; Tsubouchi, N.

    2014-02-15

    A 70 mm diameter 70 mm long compact ion source equipped with a hollow sputtering target has been designed and tested. The hollow sputtering target serves as the radio frequency (RF) plasma excitation electrode at 13.56 MHz. A stable beam of Cu{sup +} has been extracted when Ar was used as the discharge support gas. In the extracted beam, Cu{sup +} had occupied more than 85% of the total ion current. Further increase in Cu{sup +} ions in the beam is anticipated by increasing the RF power and Ar pressure.

  12. Split step solution in the iteration of the beam propagation method for analyzing Bragg gratings.

    PubMed

    Shu, Hong

    2009-08-20

    The split step method is applied to the iteration of the beam propagation method for analyzing the reflection of a laser beam by a volume Bragg grating. The application of the split step method is made possible by a way to properly treat the grating coupling terms in the paraxial wave equations. This method is demonstrated to be accurate in addition to efficient and robust. After this modification, the iteration of the beam propagation method is suitable for analyzing finite beams in volume Bragg gratings, for which the grating strength might be large. It is also suitable for analyzing Bragg gratings with nonuniform grating structures.

  13. An (ultra) high-vacuum compatible sputter source for oxide thin film growth

    SciTech Connect

    Mayr, Lukas; Köpfle, Norbert; Auer, Andrea; Klötzer, Bernhard; Penner, Simon

    2013-09-15

    A miniaturised CF-38 mountable sputter source for oxide and metal thin film preparation with enhanced high-vacuum and ultra-high-vacuum compatibility is described. The all home-built sputtering deposition device allows a high flexibility also in oxidic sputter materials, suitable deposition rates for preparation of films in the nm- and the sub-monolayer regime and excellent reliability and enhanced cleanliness for usage in UHV chambers. For a number of technologically important – yet hardly volatile – materials, the described source represents a significant improvement over thermal deposition techniques like electron-beam- or thermal evaporation, as especially the latter are no adequate tool to prepare atomically clean layers of refractory oxide materials. Furthermore, it is superior to commercially available magnetron sputter devices, especially for applications, where highly reproducible sub-monolayer thin film preparation under very clean UHV conditions is required (e.g., for studying phase boundary effects in catalysis). The device in turn offers the usage of a wide selection of evaporation materials and special target preparation procedures also allow the usage of pressed oxide powder targets. To prove the performance of the sputter-source, test preparations with technologically relevant oxide components, comprising ZrO{sub 2} and yttrium-stabilized ZrO{sub 2}, have been carried out. A wide range of characterization methods (electron microscopy, X-ray photoelectron spectroscopy, low-energy ion scattering, atomic force microscopy, and catalytic testing) were applied to demonstrate the properties of the sputter-deposited thin film systems.

  14. Simultaneous determination of electron beam profile and material response using self-consistent iterative method

    NASA Astrophysics Data System (ADS)

    Kandel, Yudhishthir; Denbeaux, Gregory

    2016-08-01

    We develop a novel iterative method to accurately measure electron beam shape (current density distribution) and monotonic material response as a function of position. A common method is to scan an electron beam across a knife edge along many angles to give an approximate measure of the beam profile, however such scans are not easy to obtain in all systems. The present work uses only an electron beam and multiple exposed regions of a thin film of photoresist to measure the complete beam profile for any beam shape, where the material response is characterized externally. This simplifies the setup of new experimental tools. We solve for self-consistent photoresist thickness loss response to dose and the electron beam profile simultaneously by optimizing a novel functional iteratively. We also show the successful implementation of the method in a real world data set corrupted by noise and other experimental variabilities.

  15. Method for Simulating the Thickness Distribution of a Cubic Boron Nitride Film Deposited on a Curved Substrate using Ion-beam-assisted Vapor Deposition

    NASA Astrophysics Data System (ADS)

    Kobayashi, T.; Valizadeh, R.; Colligon, J. S.; Kanematsu, H.; Morisato, K.

    A method for simulating the thickness distribution of cubic boron nitride (cBN) films deposited on a curved substrate using ion-beam-assisted vapor deposition (IBAD) is established and discussed. The deposition conditions are (i) boron arriving rate is 3.2 Å/s, (ii) ion current density is in the range 600-1600 μA/cm2, and (iii) gas composition fed into the ion source is 36% N2 + Ar. It was found that, due to simultaneous deposition and sputtering, the boron resputtering yield (which depends on the ion incident angle during cBN deposition) estimated from experimental data was higher than that of the boron sputtering yield of the BN films with a density of 3.482 g/cm3 calculated by the TRIM code. Using the above empirical boron resputtering yield, it is estimated that in the case of static coating, cBN films would not be formed when the incident angle is more than 40°. However, with continuous waving, the distribution of film thickness improves and the results are consistent with the experimental results. This estimation also agrees with the experimental results of discrete waving deposition within an allowable margin of error

  16. Heavy particle transport in sputtering systems

    NASA Astrophysics Data System (ADS)

    Trieschmann, Jan

    2015-09-01

    This contribution aims to discuss the theoretical background of heavy particle transport in plasma sputtering systems such as direct current magnetron sputtering (dcMS), high power impulse magnetron sputtering (HiPIMS), or multi frequency capacitively coupled plasmas (MFCCP). Due to inherently low process pressures below one Pa only kinetic simulation models are suitable. In this work a model appropriate for the description of the transport of film forming particles sputtered of a target material has been devised within the frame of the OpenFOAM software (specifically dsmcFoam). The three dimensional model comprises of ejection of sputtered particles into the reactor chamber, their collisional transport through the volume, as well as deposition of the latter onto the surrounding surfaces (i.e. substrates, walls). An angular dependent Thompson energy distribution fitted to results from Monte-Carlo simulations is assumed initially. Binary collisions are treated via the M1 collision model, a modified variable hard sphere (VHS) model. The dynamics of sputtered and background gas species can be resolved self-consistently following the direct simulation Monte-Carlo (DSMC) approach or, whenever possible, simplified based on the test particle method (TPM) with the assumption of a constant, non-stationary background at a given temperature. At the example of an MFCCP research reactor the transport of sputtered aluminum is specifically discussed. For the peculiar configuration and under typical process conditions with argon as process gas the transport of aluminum sputtered of a circular target is shown to be governed by a one dimensional interaction of the imposed and backscattered particle fluxes. The results are analyzed and discussed on the basis of the obtained velocity distribution functions (VDF). This work is supported by the German Research Foundation (DFG) in the frame of the Collaborative Research Centre TRR 87.

  17. Expanded beam deflection method for simultaneous measurement of displacement and vibrations of multiple microcantilevers

    SciTech Connect

    Nieradka, K.; MaloziePc, G.; Kopiec, D.; Gotszalk, T.

    2011-10-15

    Here we present an extension of optical beam deflection (OBD) method for measuring displacement and vibrations of an array of microcantilevers. Instead of focusing on the cantilever, the optical beam is either focused above or below the cantilever array, or focused only in the axis parallel to the cantilevers length, allowing a wide optical line to span multiple cantilevers in the array. Each cantilever reflects a part of the incident beam, which is then directed onto a photodiode array detector in a manner allowing distinguishing between individual beams. Each part of reflected beam behaves like a single beam of roughly the same divergence angle in the bending sensing axis as the incident beam. Since sensitivity of the OBD method depends on the divergence angle of deflected beam, high sensitivity is preserved in proposed expanded beam deflection (EBD) method. At the detector, each spot's position is measured at the same time, without time multiplexing of light sources. This provides real simultaneous readout of entire array, unavailable in most of competitive methods, and thus increases time resolution of the measurement. Expanded beam can also span another line of cantilevers allowing monitoring of specially designed two-dimensional arrays. In this paper, we present first results of application of EBD method to cantilever sensors. We show how thermal noise resolution can be easily achieved and combined with thermal noise based resonance frequency measurement.

  18. Micro-beam friction liner and method of transferring energy

    DOEpatents

    Mentesana, Charles

    2007-07-17

    A micro-beam friction liner adapted to increase performance and efficiency and reduce wear in a piezoelectric motor or actuator or other device using a traveling or standing wave to transfer energy in the form of torque and momentum. The micro-beam friction liner comprises a dense array of micro-beam projections having first ends fixed relative to a rotor and second ends projecting substantially toward a plurality of teeth of a stator, wherein the micro-beam projections are compressed and bent during piezoelectric movement of the stator teeth, thereby storing the energy, and then react against the stator teeth to convert the stored energy stored to rotational energy in the rotor.

  19. Method and apparatus for varying accelerator beam output energy

    DOEpatents

    Young, Lloyd M.

    1998-01-01

    A coupled cavity accelerator (CCA) accelerates a charged particle beam with rf energy from a rf source. An input accelerating cavity receives the charged particle beam and an output accelerating cavity outputs the charged particle beam at an increased energy. Intermediate accelerating cavities connect the input and the output accelerating cavities to accelerate the charged particle beam. A plurality of tunable coupling cavities are arranged so that each one of the tunable coupling cavities respectively connect an adjacent pair of the input, output, and intermediate accelerating cavities to transfer the rf energy along the accelerating cavities. An output tunable coupling cavity can be detuned to variably change the phase of the rf energy reflected from the output coupling cavity so that regions of the accelerator can be selectively turned off when one of the intermediate tunable coupling cavities is also detuned.

  20. Electrostatic dispersion lenses and ion beam dispersion methods

    DOEpatents

    Dahl, David A [Idaho Falls, ID; Appelhans, Anthony D [Idaho Falls, ID

    2010-12-28

    An EDL includes a case surface and at least one electrode surface. The EDL is configured to receive through the EDL a plurality of ion beams, to generate an electrostatic field between the one electrode surface and either the case surface or another electrode surface, and to increase the separation between the beams using the field. Other than an optional mid-plane intended to contain trajectories of the beams, the electrode surface or surfaces do not exhibit a plane of symmetry through which any beam received through the EDL must pass. In addition or in the alternative, the one electrode surface and either the case surface or the other electrode surface have geometries configured to shape the field to exhibit a less abrupt entrance and/or exit field transition in comparison to another electrostatic field shaped by two nested, one-quarter section, right cylindrical electrode surfaces with a constant gap width.

  1. Beam Conditioning for Free Electron Lasers:Consequences and Methods

    SciTech Connect

    Wolski, A.; Penn, G.; Sessler, A.; Wurtele, J.; /LBL, Berkeley /UC, Berkeley, Astron. Dept.

    2010-12-14

    The consequences of beam conditioning in four example cases [VISA, a soft x-ray free-electron laser (FEL), LCLS, and a 'Greenfield' FEL] are examined. It is shown that in emittance limited cases, proper conditioning reduces sensitivity to the transverse emittance and, furthermore, allows for stronger focusing in the undulator. Simulations show higher saturation power, with gain lengths reduced by a factor of 2 or more. The beam dynamics in a general conditioning system are studied, with 'matching conditions' derived for achieving conditioning without growth in the effective emittance. Various conditioning lattices are considered, and expressions derived for the amount of conditioning provided in each case when the matching conditions are satisfied. These results show that there is no fundamental obstacle to producing beam conditioning, and that the problem can be reduced to one of proper lattice design. Nevertheless, beam conditioning will not be easy to implement in practice.

  2. Formation of a Pt-Decorated Au Nanoparticle Monolayer Floating on an Ionic Liquid by the Ionic Liquid/Metal Sputtering Method and Tunable Electrocatalytic Activities of the Resulting Monolayer.

    PubMed

    Sugioka, Daisuke; Kameyama, Tatsuya; Kuwabata, Susumu; Yamamoto, Takahisa; Torimoto, Tsukasa

    2016-05-01

    A novel strategy to prepare a bimetallic Au-Pt particle film was developed through sequential sputter deposition of Au and Pt on a room temperature ionic liquid (RTIL). Au sputter deposition onto an RTIL containing hydroxyl-functionalized cations produced a monolayer of Au particles 4.2 nm in size on the liquid surface. Subsequent Pt sputtering onto the original Au particle monolayer floating on the RTIL enabled decoration of individual Au particles with Pt metals, resulting in the formation of a bimetallic Au-Pt particle monolayer with a Pt-enriched particle surface. The particle size slightly increased to 4.8 nm with Pt deposition for 120 min. The shell layer of a bimetallic particle was composed of Au-Pt alloy, the composition of which was tunable by controlling the Pt sputter deposition time. The electrochemical surface area (ECSA) was determined by cyclic voltammetry of bimetallic Au-Pt particle monolayers transferred onto HOPG electrodes by a horizontal liftoff method. The Pt surface coverage, determined by ECSAs of Au and Pt, increased from 0 to 56 mol % with elapse of the Pt sputter deposition time up to 120 min. Thus-obtained Au-Pt particle films exhibited electrocatalytic activity for methanol oxidation reaction (MOR) superior to the activities of pure Au or Pt particles. Volcano-type dependence was observed between the MOR activity and Pt surface coverage on the particles. Maximum activity was obtained for Au-Pt particles with a Pt coverage of 49 mol %, being ca. 120 times higher than that of pure Pt particles. This method enables direct decoration of metal particles with different noble metal atoms, providing a novel strategy to develop highly efficient multinary particle catalysts. PMID:27074631

  3. Formation of a Pt-Decorated Au Nanoparticle Monolayer Floating on an Ionic Liquid by the Ionic Liquid/Metal Sputtering Method and Tunable Electrocatalytic Activities of the Resulting Monolayer.

    PubMed

    Sugioka, Daisuke; Kameyama, Tatsuya; Kuwabata, Susumu; Yamamoto, Takahisa; Torimoto, Tsukasa

    2016-05-01

    A novel strategy to prepare a bimetallic Au-Pt particle film was developed through sequential sputter deposition of Au and Pt on a room temperature ionic liquid (RTIL). Au sputter deposition onto an RTIL containing hydroxyl-functionalized cations produced a monolayer of Au particles 4.2 nm in size on the liquid surface. Subsequent Pt sputtering onto the original Au particle monolayer floating on the RTIL enabled decoration of individual Au particles with Pt metals, resulting in the formation of a bimetallic Au-Pt particle monolayer with a Pt-enriched particle surface. The particle size slightly increased to 4.8 nm with Pt deposition for 120 min. The shell layer of a bimetallic particle was composed of Au-Pt alloy, the composition of which was tunable by controlling the Pt sputter deposition time. The electrochemical surface area (ECSA) was determined by cyclic voltammetry of bimetallic Au-Pt particle monolayers transferred onto HOPG electrodes by a horizontal liftoff method. The Pt surface coverage, determined by ECSAs of Au and Pt, increased from 0 to 56 mol % with elapse of the Pt sputter deposition time up to 120 min. Thus-obtained Au-Pt particle films exhibited electrocatalytic activity for methanol oxidation reaction (MOR) superior to the activities of pure Au or Pt particles. Volcano-type dependence was observed between the MOR activity and Pt surface coverage on the particles. Maximum activity was obtained for Au-Pt particles with a Pt coverage of 49 mol %, being ca. 120 times higher than that of pure Pt particles. This method enables direct decoration of metal particles with different noble metal atoms, providing a novel strategy to develop highly efficient multinary particle catalysts.

  4. Laser-driven deflection arrangements and methods involving charged particle beams

    DOEpatents

    Plettner, Tomas; Byer, Robert L.

    2011-08-09

    Systems, methods, devices and apparatus are implemented for producing controllable charged particle beams. In one implementation, an apparatus provides a deflection force to a charged particle beam. A source produces an electromagnetic wave. A structure, that is substantially transparent to the electromagnetic wave, includes a physical structure having a repeating pattern with a period L and a tilted angle .alpha., relative to a direction of travel of the charged particle beam, the pattern affects the force of the electromagnetic wave upon the charged particle beam. A direction device introduces the electromagnetic wave to the structure to provide a phase-synchronous deflection force to the charged particle beam.

  5. Method and apparatus for monitoring the power of a laser beam

    DOEpatents

    Paris, R.D.; Hackel, R.P.

    1996-02-06

    A method for monitoring the power of a laser beam in real time is disclosed. At least one optical fiber is placed through the laser beam, where a portion of light from the laser beam is coupled into the optical fiber. The optical fiber may be maintained in a stationary position or moved periodically over a cross section of the laser beam to couple light from each area traversed. Light reaching both fiber ends is monitored according to frequency and processed to determine the power of the laser beam. 6 figs.

  6. Method and apparatus for monitoring the power of a laser beam

    DOEpatents

    Paris, Robert D.; Hackel, Richard P.

    1996-01-01

    A method for monitoring the power of a laser beam in real time is disclosed. At least one optical fiber is placed through the laser beam, where a portion of light from the laser beam is coupled into the optical fiber. The optical fiber may be maintained in a stationary position or moved periodically over a cross section of the laser beam to couple light from each area traversed. Light reaching both fiber ends is monitored according to frequency and processed to determine the power of the laser beam.

  7. CRIS: A new method in isomeric beam production

    NASA Astrophysics Data System (ADS)

    Lynch, K. M.; Billowes, J.; Bissell, M. L.; Budincevic, I.; Cocolios, T. E.; De Groote, R. P.; De Schepper, S.; Fedosseev, V. N.; Flanagan, K. T.; Franchoo, S.; Garcia Ruiz, R. F.; Heylen, H.; Marsh, B. A.; Mason, P. J. R.; Neyens, G.; Procter, T. J.; Rossel, R. E.; Rothe, S.; Simpson, G. S.; Smith, A. J.; Strashnov, I.; Stroke, H. H.; Walker, P. M.; Wendt, K. D. A.; Wood, R. T.

    2013-12-01

    The Collinear Resonance Ionization Spectroscopy (CRIS) experiment at ISOLDE, CERN, uses laser radiation to stepwise excite and ionize an atomic beam for the purpose of ultra-sensitive detection of rare isotopes, and hyperfine-structure measurements. The technique also offers the ability to purify an ion beam that is heavily contaminated with radioactive isobars, including the ground state of an isotope from its isomer, allowing decay spectroscopy on nuclear isomeric states to be performed. The isomeric ion beam is selected by resonantly exciting one of its hyperfine structure levels, and subsequently ionizing it. This selectively ionized beam is deflected to a decay spectroscopy station (DSS). This consists of a rotating wheel implantation system for alpha- and beta-decay spectroscopy, and up to three germanium detectors around the implantation site for gamma-ray detection. Resonance ionization spectroscopy and the new technique of laser assisted nuclear decay spectroscopy have recently been performed at the CRIS beam line on the neutron-deficient francium isotopes. Here an overview of the two techniques will be presented, alongside a description of the CRIS beam line and DSS.

  8. METHOD AND APPARATUS FOR PULSING A CHARGED PARTICLE BEAM

    DOEpatents

    Aaland, K.; Kuenning, R.W.; Harmon, R.K.

    1961-05-01

    A system is offered for pulsing a continuous beam of charged particles to form beam pulses that are consistently rectangular and of precise time durations which may be varied over an extremely wide range at a widely variable range of repetition rates. The system generally comprises spaced deflection plates on opposite sides of a beam axis in between which a unidirectional bias field is established to deflect the beam for impingement on an off-axis collector. The bias field is periodically neutralized by the application of fast rise time substantially rectangular pulses to one of the deflection plates in opposition to the bias field and then after a time delay to the other deflection plate in aiding relation to the bias field and during the flat crest portion of the bias opposing pulses. The voltage distribution of the resulting deflection field then includes neutral or zero portions which are of symmetrical substantially rectangular configuration relative to time and during which the beam axially passes the collector in the form of a substantially rectangular beam pulse.

  9. Apparatus and method for increasing the bandwidth of a laser beam

    DOEpatents

    Chaffee, Paul H.

    1991-01-01

    A method and apparatus is disclosed that provides a laser output beam having a broad bandwidth and an intensity smooth over time. The bandwidth of the laser output can be varied easily by varying the intensity of a broadband source. The present invention includes an optical modulation apparatus comprising a narrowband laser that outputs a horizontally polarized beam (a "signal beam") and a broadband laser that outputs a vertically polarized beam (a "pump beam") whose intensity varies rapidly. The two beam are coupled into a birefringent laser material so that the respective polarizations coincide with the principal axes of the material. As the two beams travel through the material, the polarization preserving properties of the birefringent material maintain the respective polarizations of the two beam; however there is coupling between the two beams as a result of cross phase modulations, which induces a bandwidth change of the signal beam. The amount of bandwidth change is dependent upon the average intensity of the pump beam. The beams are coupled out from the birefringent material and the modulated signal beam is separated by a polarization selector. The modulated signal beam now has a wider bandwidth, and its shape remains smooth in time. This signal beam can be applied to incoherence inducing systems. The different bandwidths required by these different incoherence inducing systems can be obtained by varying the intensity of the pump beam. The United States Government has rights in this invention pursuant to Contract No. W7405-ENG-48 between the United States Department of Energy and the University of California for the operation of Lawrence Livermore National Laboratory.

  10. Dielectric SiO2/ZrO2 distributed Bragg reflectors for ZnO microcavities prepared by the reactive helicon-wave-excited-plasma sputtering method

    NASA Astrophysics Data System (ADS)

    Chichibu, S. F.; Ohmori, T.; Shibata, N.; Koyama, T.

    2006-04-01

    Reactive helicon-wave-excited-plasma sputtering method is shown to be a suitable technique for the fabrication of high reflectivity (R) distributed Bragg reflectors (DBRs), in particular, operating at the resonance wavelength of B excitons in ZnO (366.5nm), utilizing quarter-wavelength multilayers of SiO2 and ZrO2 dielectric films. According to the surface-damage-free nature and proper stoichiometry controllability of the method, dense dielectric films exhibiting ideal refractive indices (1.46 for SiO2 and 2.10 for ZrO2 at 633nm) and small root-mean-square values for the surface roughness (0.20nm for SiO2 and 0.53nm for ZrO2) were deposited using Si and Zr targets and O2 gas at room temperature. Optical reflectance spectra of the SiO2/ZrO2 DBRs agreed with those calculated using the optical multilayer film theory, and eight-pair DBR exhibited R higher than 99.5% at 366.5nm and 82nm stop bandwidth (R ⩾95%). The results indicate that the DBR can be used for the realization of polariton lasers using ZnO microcavities.

  11. Method of installing side-wall beam for guide way for magnetic levitation vehicle

    SciTech Connect

    Wakui, Hajime; Tottori, Seiichi; Matsumoto, Nobuyuki; Watanabe, Tadatomo; Shimoda, Ikuo; Nagata, Kanagawa; Nagata, Shuichi.

    1993-06-15

    A method of installing a side-wall beam on a base for a guide way for a magnetic levitation vehicle, the side-wall beam having a length along a longitudinal direction thereof in which the magnetic levitation vehicle runs and a width along a transverse direction thereof perpendicular to said longitudinal direction, said method is described comprising the steps of: interposing a plurality of elastic bodies between the side-wall beam and the base at spaced intervals in the longitudinal direction of the side-wall beam; providing a plurality of tendons having a predetermined length for fastening the side-wall beam to the base; defining a plurality of vertical holes through the side-wall beam at spaced intervals in the longitudinal direction thereof on an imaginary line which extends through an intermediate portion of each of said elastic bodies in the transverse direction of the side-wall beam and which extends along the longitudinal direction of the side-wall beam, said vertical holes having a cross-sectional area larger than the cross-sectional area of said tendons; inserting said tendons through said holes, respectively; fixing lower ends of said tendons to the base; fixing upper ends of said tendons to an upper end of the side-wall beam; and pretensioning said tendons to fasten the side-wall beam to the base, thereby holding said elastic bodies under compression between the side-wall beam and the base.

  12. Photoluminescence and compositional-structural properties of ion-beam sputter deposited Er-doped TiO{sub 2−x}N{sub x} films: Their potential as a temperature sensor

    SciTech Connect

    Scoca, D. Morales, M.; Merlo, R.; Alvarez, F.; Zanatta, A. R.

    2015-05-28

    Er-doped TiO{sub 2−x}N{sub x} films were grown by Ar{sup +} ion-beam sputtering a Ti + Er target under different N{sub 2} + O{sub 2} high-purity atmospheres. The compositional-structural properties of the samples were investigated after thermal annealing the films up to 1000 °C under a flow of oxygen. Sample characterization included x-ray photoelectron spectroscopy, grazing incidence x-ray diffraction, Raman scattering, and photoluminescence experiments. According to the experimental data, both composition and atomic structure of the samples were very sensitive to the growth conditions and annealing temperature. In the as-deposited form, the N-rich TiO{sub 2−x}N{sub x} films presented TiN crystallites and no photoluminescence. As the thermal treatments proceed, the films were transformed into TiO{sub 2} and Er{sup 3+}-related light emission were observed in the visible and near-infrared ranges at room-temperature. Whereas the development of TiO{sub 2} occurred due to the insertion-diffusion of oxygen in the films, light emission originated because of optical bandgap widening and/or structural-chemical variations in the vicinity of the Er{sup 3+} ions. Finally, the photoluminescence results in the visible range suggested the potential of the present samples in producing an optically based temperature sensor in the ∼150–500 K range.

  13. An interpretation and guide to single-pass beam shaping methods using SLMs and DMDs

    NASA Astrophysics Data System (ADS)

    Stilgoe, Alexander B.; Kashchuk, Anatolii V.; Preece, Daryl; Rubinsztein-Dunlop, Halina

    2016-06-01

    Exquisite manipulations of light can be performed with devices such as spatial light modulators (SLMs) and digital micromirror devices (DMDs). These devices can be used to simulate transverse paraxial beam wavefunction eigenstates such as the Hermite-Laguerre-Gaussian mode families. We investigate several beam shaping methods in terms of the wavefunctions of scattered light. Our analysis of the efficiency, behaviour and limitations of beam shaping methods is applied to both theory and experiment. The deviation from the ideal output from a valid beam shaping method is shown to be due to experimental factors which are not necessarily being accounted for. Incident beam mode shape, aberration, and the amplitude/phase transfer functions of the DMD and SLM impact the distribution of scattered light and hence the effectiveness and efficiency of a beam shaping method. Correcting for these particular details of the optical system accounts for all differences in efficiency and mode fidelity between experiment and theory. We explicitly show the impact of experimental parameter variations so that these problems may be diagnosed and corrected in an experimental beam shaping apparatus. We show that several beam shaping methods can be used for the production of beam modes in a single pass and the choice is based on the particular experimental conditions.

  14. An interpretation and guide to single-pass beam shaping methods using SLMs and DMDs

    NASA Astrophysics Data System (ADS)

    Stilgoe, Alexander B.; Kashchuk, Anatolii V.; Preece, Daryl; Rubinsztein-Dunlop, Halina

    2016-06-01

    Exquisite manipulations of light can be performed with devices such as spatial light modulators (SLMs) and digital micromirror devices (DMDs). These devices can be used to simulate transverse paraxial beam wavefunction eigenstates such as the Hermite–Laguerre–Gaussian mode families. We investigate several beam shaping methods in terms of the wavefunctions of scattered light. Our analysis of the efficiency, behaviour and limitations of beam shaping methods is applied to both theory and experiment. The deviation from the ideal output from a valid beam shaping method is shown to be due to experimental factors which are not necessarily being accounted for. Incident beam mode shape, aberration, and the amplitude/phase transfer functions of the DMD and SLM impact the distribution of scattered light and hence the effectiveness and efficiency of a beam shaping method. Correcting for these particular details of the optical system accounts for all differences in efficiency and mode fidelity between experiment and theory. We explicitly show the impact of experimental parameter variations so that these problems may be diagnosed and corrected in an experimental beam shaping apparatus. We show that several beam shaping methods can be used for the production of beam modes in a single pass and the choice is based on the particular experimental conditions.

  15. Production of pulsed atomic oxygen beams via laser vaporization methods

    NASA Technical Reports Server (NTRS)

    Brinza, David E.; Coulter, Daniel R.; Liang, Ranty H.; Gupta, Amitava

    1986-01-01

    The generation of energetic pulsed atomic oxygen beams by laser-driven evaporation of cryogenically frozen ozone/oxygen films and thin indium-tin oxide (ITO) films is reported. Mass spectroscopy is used in the mass and energy characterization of beams from the ozone/oxygen films, and a peak flux of 3 x 10 to the 20th/sq m per sec at 10 eV is found. Analysis of the time-of-flight data suggests that several processes contribute to the formation of the oxygen beam. Results show the absence of metastable states such as the 2p(3)3s(1)(5S) level of atomic oxygen blown-off from the ITO films. The present process has application to the study of the oxygen degradation problem of LEO materials.

  16. Comparison of methods of producing very highly stripped uranium beams

    SciTech Connect

    Brown, I.G.

    1983-10-01

    A comparison is made between the production of high intensity beams of helium-like uranium ions, U/sup 90 +/, by conventional and exotic ion sources, and by the foil stripping of highly accelerated ions output from the Bevalac. The parameter requirements are specified and compared to the parameters achievable by present day ion source technology. The EBIS (Electron Beam Ion Source) comes closest to satisfying the necessary parameters, and this possibility is considered in some detail. We conclude that existing and near-future ion source technology does not provide a means of production of high intensity U/sup 90 +/ beams. Foil stripping of lower charge state species that have been accelerated through the Bevalac provides a convenient approach.

  17. A method of predicting the energy-absorption capability of composite subfloor beams

    NASA Technical Reports Server (NTRS)

    Farley, Gary L.

    1987-01-01

    A simple method of predicting the energy-absorption capability of composite subfloor beam structure was developed. The method is based upon the weighted sum of the energy-absorption capability of constituent elements of a subfloor beam. An empirical data base of energy absorption results from circular and square cross section tube specimens were used in the prediction capability. The procedure is applicable to a wide range of subfloor beam structure. The procedure was demonstrated on three subfloor beam concepts. Agreement between test and prediction was within seven percent for all three cases.

  18. Influence of deposition temperature on the growth of rutile TiO2 nanostructures by CBD method on seed layer prepared by RF magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Selman, Abbas M.; Hassan, Z.

    2013-12-01

    Rutile titanium dioxide (TiO2) nanostructures were successfully fabricated using the simple chemical bath deposition method at various deposition temperatures. These nanostructures were fabricated on (100 ± 10 nm) TiO2 seed layer coated glass, which was prepared via radio frequency (RF) magnetron sputtering at a substrate temperature of 350 °C. The synthesized TiO2 nanostructures were annealed at 550 °C for 2 h and examined via X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), photoluminescence (PL), and Raman spectroscopy. The XRD patterns showed the presence of the peaks characteristic of rutile phase. The band gap of the TiO2 nanostructures was calculated using the UV-vis absorption spectrum and was determined to be between 3.15 and 3.24 eV. The Raman spectra contained three characteristic bands at 232, 446 and 612 cm-1, which correspond to the tetragonal TiO2 rutile. The results showed good quality of nanocrystalline TiO2 rutile phase.

  19. Phase transformations in nanostructured coatings based on Zr-Y-O and produced by a pulse magnetron sputtering method

    SciTech Connect

    Fedorischeva, Marina V. Kalashnikov, Mark P. Sergeev, Victor P.

    2015-10-27

    Deposition of nanostructured coatings on the basis of Zr-Y-O was implemented by the pulse magnetron methods. Structural-phase states and morphology of the nanostructured coatings were investigated by TEM, SEM and the high-temperature X-ray method. The method of the high-temperature X-ray diffraction revealed the presence of reversible phase transition of the tetragonal phase to the monoclinic phase, which can ensure stress relaxation and closure of surface cracks.

  20. A new method of rapid power measurement for MW-scale high-current particle beams

    NASA Astrophysics Data System (ADS)

    Xu, Yongjian; Hu, Chundong; Xie, Yuanlai; Liu, Zhimin; Xie, Yahong; Liu, Sheng; Liang, Lizheng; Jiang, Caichao; Sheng, Peng; Yu, Ling

    2015-09-01

    MW-scale high current particle beams are widely applied for plasma heating in the magnetic confinement fusion devices, in which beam power is an important indicator for efficient heating. Generally, power measurement of MW-scale high current particle beam adopts water flow calorimetry (WFC). Limited by the principles of WFC, the beam power given by WFC is an averaged value. In this article a new method of beam power for MW-scale high-current particle beams is introduced: (1) the temperature data of thermocouples embedded in the beam stopping elements were obtained using high data acquire system, (2) the surface heat flux of the beam stopping elements are calculated using heat transfer, (3) the relationships between positions and heat flux were acquired using numerical simulation, (4) the real-time power deposited on the beam stopping elements can be calculated using surface integral. The principle of measurement was described in detail and applied to the EAST neutral beam injector for demonstration. The result is compared with that measured by WFC. Comparison of the results shows good accuracy and applicability of this measuring method.

  1. Production of fullerene ions by combining of plasma sputtering with laser ablation

    SciTech Connect

    Yamada, K. Saitoh, Y.; Yokota, W.

    2014-02-15

    We have produced C{sub 60} ion beams by combining plasma sputtering and laser ablation. A C{sub 60} sample was placed in an electron cyclotron resonance type ion source, negatively biased and sputtered by argon plasma. The beam current of C{sub 60}{sup +} decreased rapidly, but it was transiently recovered by a single laser shot that ablates the thin sample surface on the sputtered area. Temporal variations in beam current are reported in response to laser shots repeated at intervals of a few minutes.

  2. Production of pulsed atomic oxygen beams via laser vaporization methods

    NASA Technical Reports Server (NTRS)

    Brinza, David E.; Coulter, Daniel R.; Liang, Ranty H.; Gupta, Amitava

    1987-01-01

    Energetic pulsed atomic oxygen beams were generated by laser-driven evaporation of cryogenically frozen ozone/oxygen films and thin films of indium-tin oxide (ITO). Mass and energy characterization of beams from the ozone/oxygen films were carried out by mass spectrometry. The peak flux, found to occur at 10 eV, is estimated from this data to be 3 x 10(20) m(-2) s(-1). Analysis of the time-of-flight data indicates a number of processes contribute to the formation of the atomic oxygen beam. The absence of metastable states such as the 2p(3) 3s(1) (5S) level of atomic oxygen blown off from ITO films is supported by the failure to observe emission at 777.3 nm from the 2p(3) 3p(1) (5P sub J) levels. Reactive scattering experiments with polymer film targets for atomic oxygen bombardment are planned using a universal crossed molecular beam apparatus.

  3. Comparative study of beam losses and heat loads reduction methods in MITICA beam source

    SciTech Connect

    Sartori, E. Agostinetti, P.; Dal Bello, S.; Marcuzzi, D.; Serianni, G.; Veltri, P.; Sonato, P.

    2014-02-15

    In negative ion electrostatic accelerators a considerable fraction of extracted ions is lost by collision processes causing efficiency loss and heat deposition over the components. Stripping is proportional to the local density of gas, which is steadily injected in the plasma source; its pumping from the extraction and acceleration stages is a key functionality for the prototype of the ITER Neutral Beam Injector, and it can be simulated with the 3D code AVOCADO. Different geometric solutions were tested aiming at the reduction of the gas density. The parameter space considered is limited by constraints given by optics, aiming, voltage holding, beam uniformity, and mechanical feasibility. The guidelines of the optimization process are presented together with the proposed solutions and the results of numerical simulations.

  4. Comparative study of beam losses and heat loads reduction methods in MITICA beam source

    NASA Astrophysics Data System (ADS)

    Sartori, E.; Agostinetti, P.; Dal Bello, S.; Marcuzzi, D.; Serianni, G.; Sonato, P.; Veltri, P.

    2014-02-01

    In negative ion electrostatic accelerators a considerable fraction of extracted ions is lost by collision processes causing efficiency loss and heat deposition over the components. Stripping is proportional to the local density of gas, which is steadily injected in the plasma source; its pumping from the extraction and acceleration stages is a key functionality for the prototype of the ITER Neutral Beam Injector, and it can be simulated with the 3D code AVOCADO. Different geometric solutions were tested aiming at the reduction of the gas density. The parameter space considered is limited by constraints given by optics, aiming, voltage holding, beam uniformity, and mechanical feasibility. The guidelines of the optimization process are presented together with the proposed solutions and the results of numerical simulations.

  5. TH-C-BRD-02: Analytical Modeling and Dose Calculation Method for Asymmetric Proton Pencil Beams

    SciTech Connect

    Gelover, E; Wang, D; Hill, P; Flynn, R; Hyer, D

    2014-06-15

    Purpose: A dynamic collimation system (DCS), which consists of two pairs of orthogonal trimmer blades driven by linear motors has been proposed to decrease the lateral penumbra in pencil beam scanning proton therapy. The DCS reduces lateral penumbra by intercepting the proton pencil beam near the lateral boundary of the target in the beam's eye view. The resultant trimmed pencil beams are asymmetric and laterally shifted, and therefore existing pencil beam dose calculation algorithms are not capable of trimmed beam dose calculations. This work develops a method to model and compute dose from trimmed pencil beams when using the DCS. Methods: MCNPX simulations were used to determine the dose distributions expected from various trimmer configurations using the DCS. Using these data, the lateral distribution for individual beamlets was modeled with a 2D asymmetric Gaussian function. The integral depth dose (IDD) of each configuration was also modeled by combining the IDD of an untrimmed pencil beam with a linear correction factor. The convolution of these two terms, along with the Highland approximation to account for lateral growth of the beam along the depth direction, allows a trimmed pencil beam dose distribution to be analytically generated. The algorithm was validated by computing dose for a single energy layer 5×5 cm{sup 2} treatment field, defined by the trimmers, using both the proposed method and MCNPX beamlets. Results: The Gaussian modeled asymmetric lateral profiles along the principal axes match the MCNPX data very well (R{sup 2}≥0.95 at the depth of the Bragg peak). For the 5×5 cm{sup 2} treatment plan created with both the modeled and MCNPX pencil beams, the passing rate of the 3D gamma test was 98% using a standard threshold of 3%/3 mm. Conclusion: An analytical method capable of accurately computing asymmetric pencil beam dose when using the DCS has been developed.

  6. Method and apparatus for real time imaging and monitoring of radiotherapy beams

    DOEpatents

    Majewski, Stanislaw; Proffitt, James; Macey, Daniel J.; Weisenberger, Andrew G.

    2011-11-01

    A method and apparatus for real time imaging and monitoring of radiation therapy beams is designed to preferentially distinguish and image low energy radiation from high energy secondary radiation emitted from a target as the result of therapeutic beam deposition. A detector having low sensitivity to high energy photons combined with a collimator designed to dynamically image in the region of the therapeutic beam target is used.

  7. Nonpropulsive applications of ion beams

    NASA Technical Reports Server (NTRS)

    Hudson, W. R.

    1976-01-01

    Eight centimeter ion beam sources utilizing xenon and argon have been developed that operate over a wide range of beam energies and currents. Three types of processes have been studied: sputter deposition, ion beam machining, and ion beam surface texturing. The broad range of source operating conditions allows optimum sputter deposition of various materials. An ion beam source was used to ion mill laser reflection holograms using photoresist patterns on silicon. Ion beam texturing was tried with many materials and has a multitude of potential applications.

  8. Apparatus and method for increasing the bandwidth of a laser beam

    DOEpatents

    Wilcox, Russell B.

    1992-01-01

    A method and apparatus using sinusoidal cross-phase modulation, provides a laser pulse having a very broad bandwidth while substantially retaining the input laser's temporal shape. The modulator may be used in a master oscillator system for a laser having a master oscillator-power amplifier (MOPA) configration. The modulator utilizes a first laser providing an output wavelength .lambda. and a second laser providing an output wavelength shifted by a small amount to .lambda.+.DELTA..lambda.. Each beam has a single, linear polarization. Each beam is coupled into a length of polarization-preserving optical fiber. The first laser beam is coupled into the optical fiber with the beam's polarization aligned with the fiber's main axis, and the second beam is coupled into the fiber with its polarization rotated from the main axis by a predetermined angle. Within the fiber, the main axis' polarization defines an interference beam and the orthogonal axis' polarization defines a signal beam. In the interference beam, the first laser beam and the parallel polarized vector component of the other beam interfere to create areas of high and low intensity, which modulates the signal beam by cross phase modulation. Upon exit from the optical fiber, the beams are coupled out and the modulated signal beam is separated out by a polarization selector. The signal beam can be applied to coherence reducing systems to provide an output that is temporally and spatially incoherent. The U.S. Government has rights in this invention pursuant to Contract No. W7405-ENG-48 between the U.S. Department of Energy and the University of California for the operation of Lawrence Livermore National Laboratory.

  9. Large deflection dynamic response analysis of flexible hull beams by the multibody system method

    NASA Astrophysics Data System (ADS)

    Zhang, Xiaojun; Wu, Guorong

    2007-04-01

    In this paper the large deflection dynamic problems of Euler beams are investigated. The vibration control equations are derived based on the multibody system method. A numerical procedure for solving the resulting differential algebraic equations is presented on the basis of the Newmark direct integration method combined with the Newton-Raphson iterative method. The sub beams are treated as small deformation in the convected coordinate systems, which can greatly simplify the deformation description. The rigid motions of the sub beams are taken into account through the motions of the convected coordinate systems. Numerical examples are carried out, where results show the effectiveness of the proposed method.

  10. Ion Beam Epitaxy

    NASA Astrophysics Data System (ADS)

    Yamada, I.

    The following sections are included: * FILM FORMATION BY ION BEAMS * Fundamental Processes in Film Formation by Low Energy Ion Beams * Comparison of ICB with Other Physical Vapor Deposition Methods * Vacuum Deposition * Sputter Deposition * Ion Plating * Ion Beam Deposition * Simultaneous Deposition and Implantation * Plasma Enhanced Deposition * Section I References * ION CLUSTER BEAM DEPOSITION AND CLUSTER BEAM FORMATION * Nucleation Process * Growth and Condensation Process * Section II References * CHARACTERISTICS OF THE CLUSTER * Velocity of Clusters * Energy of Clusters * TEM Observation of Clusters * Structural Properties * Section III References * IONIZED CLUSTER BEAM DEPOSITION SYSTEM * Section IV References * FILM DEPOSITION PROCESS BY ICB * Fundamental Process * Effects of Kinetic Energy on the Film Properties * Epitaxial phenomena * Crystallographic Structure * Physical Structure of Films * Effects of the Electric Charge on the Film Properties * Section V References * APPLICATIONS * Silicon and Silicon Alloy Films * Low Temperature Epitaxy of Silicon Films * Thermally Stable a-Si Film Growth * High Quality SiO2 Film Deposition * Epitaxial A1 Films * Electromigration Resistant A1 Film * Thermally Stable Al/Si Contact * II-VI and III-V Compound Films * Thin Multiple Layered Film * CONCLUSIONS * Acknowledgements * Section VI References

  11. Device and method for electron beam heating of a high density plasma

    DOEpatents

    Thode, Lester E.

    1981-01-01

    A device and method for relativistic electron beam heating of a high density plasma in a small localized region. A relativistic electron beam generator produces a high voltage electron beam which propagates along a vacuum drift tube and is modulated to initiate electron bunching within the beam. The beam is then directed through a low density gas chamber which provides isolation between the vacuum modulator and the relativistic electron beam target. The relativistic beam is then applied to a high density target plasma which typically comprises DT, DD, hydrogen boron or similar thermonuclear gas at a density of 10.sup.17 to 10.sup.20 electrons per cubic centimeter. The target plasma is ionized prior to application of the electron beam by means of a laser or other preionization source. Utilizing a relativistic electron beam with an individual particle energy exceeding 3 MeV, classical scattering by relativistic electrons passing through isolation foils is negligible. As a result, relativistic streaming instabilities are initiated within the high density target plasma causing the relativistic electron beam to efficiently deposit its energy into a small localized region within the high density plasma target.

  12. Measuring the body vector of a free flight bumblebee by the reflection beam method

    NASA Astrophysics Data System (ADS)

    Zeng, Lijiang; Hao, Qun; Kawachi, Keiji

    2001-11-01

    Knowledge of wing orientation and deformation in free flying insects is necessary for a complete aerodynamic analysis. It is important to determine the body coordinate of an insect because the kinematic features are described based on the body coordinate. A reflection beam method has been developed for measuring the body vector of a free-flying bumblebee with large angle range and high accuracy. The method uses a piece of small cover glass attached to the bumblebee for reflecting the laser beam, and a trapezoid screen for measuring the direction of the reflected beam, allowing us to determine the body vector based on the direction of the incident beam and that of the reflected beam. The method has been successfully used to measure the body vector of a free flight bumblebee.

  13. Ion Micro Beam, promising methods for interdisciplinary research

    NASA Astrophysics Data System (ADS)

    Cutroneo, M.; Havranek, V.; Torrisi, L.; Svecova, B.

    2016-05-01

    An increasing attractiveness of top-down nanotechnology using nuclear microprobe techniques have been gathered to the micro and nano patterning process for polymers. This paper presents the research activity on innovative promising techniques able to produce three- dimensional (3D) micro-structures in polymeric resists as well as to obtain images of fabricated nanostructures at Tandetron Laboratory (LT) of the Nuclear Physics Institute in Rez (Czech Republic). The Proton Beam Writing (PBW) technique was used to irradiate PMMA resist with energy of MeVs protons. The fabricated patterns were developed in chemical bath using different etching rates. An overview of micro-scale structures have been fabricated selecting the beam, the energy, the fluence and the exposition time. The produced structures were investigated by different analysis techniques among which Scanning Transmission Ion Microscopy (STIM). The characterizations of the fabricated microtunnels are presented and discussed.

  14. Apparatus and methods for continuous beam fourier transform mass spectrometry

    DOEpatents

    McLuckey, Scott A.; Goeringer, Douglas E.

    2002-01-01

    A continuous beam Fourier transform mass spectrometer in which a sample of ions to be analyzed is trapped in a trapping field, and the ions in the range of the mass-to-charge ratios to be analyzed are excited at their characteristic frequencies of motion by a continuous excitation signal. The excited ions in resonant motions generate real or image currents continuously which can be detected and processed to provide a mass spectrum.

  15. Method and system for producing sputtered thin films with sub-angstrom thickness uniformity or custom thickness gradients

    DOEpatents

    Folta, James A.; Montcalm, Claude; Walton, Christopher

    2003-01-01

    A method and system for producing a thin film with highly uniform (or highly accurate custom graded) thickness on a flat or graded substrate (such as concave or convex optics), by sweeping the substrate across a vapor deposition source with controlled (and generally, time-varying) velocity. In preferred embodiments, the method includes the steps of measuring the source flux distribution (using a test piece that is held stationary while exposed to the source), calculating a set of predicted film thickness profiles, each film thickness profile assuming the measured flux distribution and a different one of a set of sweep velocity modulation recipes, and determining from the predicted film thickness profiles a sweep velocity modulation recipe which is adequate to achieve a predetermined thickness profile. Aspects of the invention include a practical method of accurately measuring source flux distribution, and a computer-implemented method employing a graphical user interface to facilitate convenient selection of an optimal or nearly optimal sweep velocity modulation recipe to achieve a desired thickness profile on a substrate. Preferably, the computer implements an algorithm in which many sweep velocity function parameters (for example, the speed at which each substrate spins about its center as it sweeps across the source) can be varied or set to zero.

  16. High-precision method for determining the position of laser beam focal plane

    SciTech Connect

    Malashko, Ya I; Kleimenov, A N; Potemkin, I B; Khabibulin, V M

    2013-12-31

    The method of wavefront doubled-frequency spherical modulation for determining the laser beam waist position has been simulated and experimentally studied. The error in determining the focal plane position is less than 10{sup -5} D. The amplitude of the control doubled-frequency electric signal is experimentally found to correspond to 12% of the total radiation power. (laser beams)

  17. SYSTEMATIC ERROR REDUCTION: NON-TILTED REFERENCE BEAM METHOD FOR LONG TRACE PROFILER.

    SciTech Connect

    QIAN,S.; QIAN, K.; HONG, Y.; SENG, L.; HO, T.; TAKACS, P.

    2007-08-25

    Systematic error in the Long Trace Profiler (LTP) has become the major error source as measurement accuracy enters the nanoradian and nanometer regime. Great efforts have been made to reduce the systematic error at a number of synchrotron radiation laboratories around the world. Generally, the LTP reference beam has to be tilted away from the optical axis in order to avoid fringe overlap between the sample and reference beams. However, a tilted reference beam will result in considerable systematic error due to optical system imperfections, which is difficult to correct. Six methods of implementing a non-tilted reference beam in the LTP are introduced: (1) application of an external precision angle device to measure and remove slide pitch error without a reference beam, (2) independent slide pitch test by use of not tilted reference beam, (3) non-tilted reference test combined with tilted sample, (4) penta-prism scanning mode without a reference beam correction, (5) non-tilted reference using a second optical head, and (6) alternate switching of data acquisition between the sample and reference beams. With a non-tilted reference method, the measurement accuracy can be improved significantly. Some measurement results are presented. Systematic error in the sample beam arm is not addressed in this paper and should be treated separately.

  18. Heavy ion irradiation of crystalline water ice. Cosmic ray amorphisation cross-section and sputtering yield

    NASA Astrophysics Data System (ADS)

    Dartois, E.; Augé, B.; Boduch, P.; Brunetto, R.; Chabot, M.; Domaracka, A.; Ding, J. J.; Kamalou, O.; Lv, X. Y.; Rothard, H.; da Silveira, E. F.; Thomas, J. C.

    2015-04-01

    Context. Under cosmic irradiation, the interstellar water ice mantles evolve towards a compact amorphous state. Crystalline ice amorphisation was previously monitored mainly in the keV to hundreds of keV ion energies. Aims: We experimentally investigate heavy ion irradiation amorphisation of crystalline ice, at high energies closer to true cosmic rays, and explore the water-ice sputtering yield. Methods: We irradiated thin crystalline ice films with MeV to GeV swift ion beams, produced at the GANIL accelerator. The ice infrared spectral evolution as a function of fluence is monitored with in-situ infrared spectroscopy (induced amorphisation of the initial crystalline state into a compact amorphous phase). Results: The crystalline ice amorphisation cross-section is measured in the high electronic stopping-power range for different temperatures. At large fluence, the ice sputtering is measured on the infrared spectra, and the fitted sputtering-yield dependence, combined with previous measurements, is quadratic over three decades of electronic stopping power. Conclusions: The final state of cosmic ray irradiation for porous amorphous and crystalline ice, as monitored by infrared spectroscopy, is the same, but with a large difference in cross-section, hence in time scale in an astrophysical context. The cosmic ray water-ice sputtering rates compete with the UV photodesorption yields reported in the literature. The prevalence of direct cosmic ray sputtering over cosmic-ray induced photons photodesorption may be particularly true for ices strongly bonded to the ice mantles surfaces, such as hydrogen-bonded ice structures or more generally the so-called polar ices. Experiments performed at the Grand Accélérateur National d'Ions Lourds (GANIL) Caen, France. Part of this work has been financed by the French INSU-CNRS programme "Physique et Chimie du Milieu Interstellaire" (PCMI) and the ANR IGLIAS.

  19. More on analyzing the reflection of a laser beam by a deformed highly reflective volume Bragg grating using iteration of the beam propagation method.

    PubMed

    Shu, Hong; Mokhov, Sergiy; Zeldovich, Boris Ya; Bass, Michael

    2009-01-01

    A further extension of the iteration method for beam propagation calculation is presented that can be applied for volume Bragg gratings (VBGs) with extremely large grating strength. A reformulation of the beam propagation formulation is presented for analyzing the reflection of a laser beam by a deformed VBG. These methods will be shown to be very accurate and efficient. A VBG with generic z-dependent distortion has been analyzed using these methods.

  20. Reconstructing accurate ToF-SIMS depth profiles for organic materials with differential sputter rates

    PubMed Central

    Taylor, Adam J.; Graham, Daniel J.; Castner, David G.

    2015-01-01

    To properly process and reconstruct 3D ToF-SIMS data from systems such as multi-component polymers, drug delivery scaffolds, cells and tissues, it is important to understand the sputtering behavior of the sample. Modern cluster sources enable efficient and stable sputtering of many organics materials. However, not all materials sputter at the same rate and few studies have explored how different sputter rates may distort reconstructed depth profiles of multicomponent materials. In this study spun-cast bilayer polymer films of polystyrene and PMMA are used as model systems to optimize methods for the reconstruction of depth profiles in systems exhibiting different sputter rates between components. Transforming the bilayer depth profile from sputter time to depth using a single sputter rate fails to account for sputter rate variations during the profile. This leads to inaccurate apparent layer thicknesses and interfacial positions, as well as the appearance of continued sputtering into the substrate. Applying measured single component sputter rates to the bilayer films with a step change in sputter rate at the interfaces yields more accurate film thickness and interface positions. The transformation can be further improved by applying a linear sputter rate transition across the interface, thus modeling the sputter rate changes seen in polymer blends. This more closely reflects the expected sputtering behavior. This study highlights the need for both accurate evaluation of component sputter rates and the careful conversion of sputter time to depth, if accurate 3D reconstructions of complex multi-component organic and biological samples are to be achieved. The effects of errors in sputter rate determination are also explored. PMID:26185799

  1. Sputter-deposited fuel cell membranes and electrodes

    NASA Technical Reports Server (NTRS)

    Narayanan, Sekharipuram R. (Inventor); Jeffries-Nakamura, Barbara (Inventor); Chun, William (Inventor); Ruiz, Ron P. (Inventor); Valdez, Thomas I. (Inventor)

    2001-01-01

    A method for preparing a membrane for use in a fuel cell membrane electrode assembly includes the steps of providing an electrolyte membrane, and sputter-depositing a catalyst onto the electrolyte membrane. The sputter-deposited catalyst may be applied to multiple sides of the electrolyte membrane. A method for forming an electrode for use in a fuel cell membrane electrode assembly includes the steps of obtaining a catalyst, obtaining a backing, and sputter-depositing the catalyst onto the backing. The membranes and electrodes are useful for assembling fuel cells that include an anode electrode, a cathode electrode, a fuel supply, and an electrolyte membrane, wherein the electrolyte membrane includes a sputter-deposited catalyst, and the sputter-deposited catalyst is effective for sustaining a voltage across a membrane electrode assembly in the fuel cell.

  2. Production of (211)At by a vertical beam irradiation method.

    PubMed

    Nagatsu, Kotaro; Minegishi, Katsuyuki; Fukada, Masami; Suzuki, Hisashi; Hasegawa, Sumitaka; Zhang, Ming-Rong

    2014-12-01

    We produced (211)At by irradiating the semi-sealed encapsulated Bi target with an external vertical beam. At 28.5MeV, the yield of (211)At was 22MBq/μAh (600μCi/μAh). (211)At was recovered by dry distillation, and 80% of the produced (211)At was successfully obtained in dry Na(211)At form within 2h from the end of bombardment (EOB). The radionuclidic purity of (211)At was >99% at 5h from EOB. PMID:25439168

  3. Production of (211)At by a vertical beam irradiation method.

    PubMed

    Nagatsu, Kotaro; Minegishi, Katsuyuki; Fukada, Masami; Suzuki, Hisashi; Hasegawa, Sumitaka; Zhang, Ming-Rong

    2014-12-01

    We produced (211)At by irradiating the semi-sealed encapsulated Bi target with an external vertical beam. At 28.5MeV, the yield of (211)At was 22MBq/μAh (600μCi/μAh). (211)At was recovered by dry distillation, and 80% of the produced (211)At was successfully obtained in dry Na(211)At form within 2h from the end of bombardment (EOB). The radionuclidic purity of (211)At was >99% at 5h from EOB.

  4. Investigations of Sputtered Ion Production

    NASA Astrophysics Data System (ADS)

    Schauer, Stephen Nicholai

    Secondary Ion Mass Spectrometry is based on sputtered ion emission. Although the sputtering process was observed over 100 years ago, the ion emission process is still not well understood. Ions are formed with a wide range of energies, charge states and multiplicities, and ionization efficiencies can vary by orders of magnitude, depending on the particular ion and the matrix from which it originates. A series of studies are presented here which examine ion production in several unusual areas in order to gain insight into the sputtered ion emission process. The energy of analyzed ions is usually limited to 125 eV or less. The range of the Cameca IMS-3f at Arizona State University has been extended to analyze ions with up to 4500 eV of initial kinetic energy. The use of high energy ions to eliminate cluster interferences has been developed as an analytical technique. Doubly-charged positive ions of Mg, Al and Si have been widely studied. Other doubley-charged ions have been almost ignored, mainly due to low signal intensity. Studies of doubly-charged ions of the fourth row elements are presented here. The energy distribution of these ions indicates that they are formed by an Auger process, commonly referred to as the kinetic emission process. Small gas phase doubly-charged negative ions are very rare. Reports of atomic doubly-charged negative ions have been disproved, or were unable to be confirmed. Large molecules or clusters are able to accommodate a double -negative charge, because of the large separation between the two electrons. Observations of small carbon cluster dianions are discussed. The oscillations in intensity give an indication of their structure and stability. Electron bombardment can also cause the emission of ions from surfaces. There is some controversy as to whether the ions are desorbed directly from the sample, or are desorbed as neutrals and ionized above the sample by interaction with the electron beam or secondary electrons. Measurements of

  5. On the role of ion-based imaging methods in modern ion beam therapy

    SciTech Connect

    Magallanes, L. Rinaldi, I.; Brons, S.; Marcelos, T. Parodi, K.; Takechi, M.; Voss, B.; Jäkel, O.

    2014-11-07

    External beam radiotherapy techniques have the common aim to maximize the radiation dose to the target while sparing the surrounding healthy tissues. The inverted and finite depth-dose profile of ion beams (Bragg peak) allows for precise dose delivery and conformai dose distribution. Furthermore, increased radiobiological effectiveness of ions enhances the capability to battle radioresistant tumors. Ion beam therapy requires a precise determination of the ion range, which is particularly sensitive to range uncertainties. Therefore, novel imaging techniques are currently investigated as a tool to improve the quality of ion beam treatments. Approaches already clinically available or under development are based on the detection of secondary particles emitted as a result of nuclear reactions (e.g., positron-annihilation or prompt gammas, charged particles) or transmitted high energy primary ion beams. Transmission imaging techniques make use of the beams exiting the patient, which have higher initial energy and lower fluence than the therapeutic ones. At the Heidelberg Ion Beam Therapy Center, actively scanned energetic proton and carbon ion beams provide an ideal environment for the investigation of ion-based radiography and tomography. This contribution presents the rationale of ion beam therapy, focusing on the role of ion-based transmission imaging methods towards the reduction of range uncertainties and potential improvement of treatment planning.

  6. On the role of ion-based imaging methods in modern ion beam therapy

    NASA Astrophysics Data System (ADS)

    Magallanes, L.; Brons, S.; Marcelos, T.; Takechi, M.; Voss, B.; Jäkel, O.; Rinaldi, I.; Parodi, K.

    2014-11-01

    External beam radiotherapy techniques have the common aim to maximize the radiation dose to the target while sparing the surrounding healthy tissues. The inverted and finite depth-dose profile of ion beams (Bragg peak) allows for precise dose delivery and conformai dose distribution. Furthermore, increased radiobiological effectiveness of ions enhances the capability to battle radioresistant tumors. Ion beam therapy requires a precise determination of the ion range, which is particularly sensitive to range uncertainties. Therefore, novel imaging techniques are currently investigated as a tool to improve the quality of ion beam treatments. Approaches already clinically available or under development are based on the detection of secondary particles emitted as a result of nuclear reactions (e.g., positron-annihilation or prompt gammas, charged particles) or transmitted high energy primary ion beams. Transmission imaging techniques make use of the beams exiting the patient, which have higher initial energy and lower fluence than the therapeutic ones. At the Heidelberg Ion Beam Therapy Center, actively scanned energetic proton and carbon ion beams provide an ideal environment for the investigation of ion-based radiography and tomography. This contribution presents the rationale of ion beam therapy, focusing on the role of ion-based transmission imaging methods towards the reduction of range uncertainties and potential improvement of treatment planning.

  7. Large-area, continuous and high electrical performances of bilayer to few layers MoS2 fabricated by RF sputtering via post-deposition annealing method

    NASA Astrophysics Data System (ADS)

    Hussain, Sajjad; Singh, Jai; Vikraman, Dhanasekaran; Singh, Arun Kumar; Iqbal, Muhammad Zahir; Khan, Muhammad Farooq; Kumar, Pushpendra; Choi, Dong-Chul; Song, Wooseok; An, Ki-Seok; Eom, Jonghwa; Lee, Wan-Gyu; Jung, Jongwan

    2016-08-01

    We report a simple and mass-scalable approach for thin MoS2 films via RF sputtering combined with the post-deposition annealing process. We have prepared as-sputtered film using a MoS2 target in the sputtering system. The as-sputtered film was subjected to post-deposition annealing to improve crystalline quality at 700 °C in a sulfur and argon environment. The analysis confirmed the growth of continuous bilayer to few-layer MoS2 film. The mobility value of ~29 cm2/Vs and current on/off ratio on the order of ~104 were obtained for bilayer MoS2. The mobility increased up to ~173-181 cm2/Vs, respectively, for few-layer MoS2. The mobility of our bilayer MoS2 FETs is larger than any previously reported values of single to bilayer MoS2 grown on SiO2/Si substrate with a SiO2 gate oxide. Moreover, our few-layer MoS2 FETs exhibited the highest mobility value ever reported for any MoS2 FETs with a SiO2 gate oxide. It is presumed that the high mobility behavior of our film could be attributed to low charged impurities of our film and dielectric screening effect by an interfacial MoOxSiy layer. The combined preparation route of RF sputtering and post-deposition annealing process opens up the novel possibility of mass and batch production of MoS2 film.

  8. Large-area, continuous and high electrical performances of bilayer to few layers MoS2 fabricated by RF sputtering via post-deposition annealing method

    PubMed Central

    Hussain, Sajjad; Singh, Jai; Vikraman, Dhanasekaran; Singh, Arun Kumar; Iqbal, Muhammad Zahir; Khan, Muhammad Farooq; Kumar, Pushpendra; Choi, Dong-Chul; Song, Wooseok; An, Ki-Seok; Eom, Jonghwa; Lee, Wan-Gyu; Jung, Jongwan

    2016-01-01

    We report a simple and mass-scalable approach for thin MoS2 films via RF sputtering combined with the post-deposition annealing process. We have prepared as-sputtered film using a MoS2 target in the sputtering system. The as-sputtered film was subjected to post-deposition annealing to improve crystalline quality at 700 °C in a sulfur and argon environment. The analysis confirmed the growth of continuous bilayer to few-layer MoS2 film. The mobility value of ~29 cm2/Vs and current on/off ratio on the order of ~104 were obtained for bilayer MoS2. The mobility increased up to ~173–181 cm2/Vs, respectively, for few-layer MoS2. The mobility of our bilayer MoS2 FETs is larger than any previously reported values of single to bilayer MoS2 grown on SiO2/Si substrate with a SiO2 gate oxide. Moreover, our few-layer MoS2 FETs exhibited the highest mobility value ever reported for any MoS2 FETs with a SiO2 gate oxide. It is presumed that the high mobility behavior of our film could be attributed to low charged impurities of our film and dielectric screening effect by an interfacial MoOxSiy layer. The combined preparation route of RF sputtering and post-deposition annealing process opens up the novel possibility of mass and batch production of MoS2 film. PMID:27492282

  9. Large-area, continuous and high electrical performances of bilayer to few layers MoS2 fabricated by RF sputtering via post-deposition annealing method.

    PubMed

    Hussain, Sajjad; Singh, Jai; Vikraman, Dhanasekaran; Singh, Arun Kumar; Iqbal, Muhammad Zahir; Khan, Muhammad Farooq; Kumar, Pushpendra; Choi, Dong-Chul; Song, Wooseok; An, Ki-Seok; Eom, Jonghwa; Lee, Wan-Gyu; Jung, Jongwan

    2016-08-05

    We report a simple and mass-scalable approach for thin MoS2 films via RF sputtering combined with the post-deposition annealing process. We have prepared as-sputtered film using a MoS2 target in the sputtering system. The as-sputtered film was subjected to post-deposition annealing to improve crystalline quality at 700 °C in a sulfur and argon environment. The analysis confirmed the growth of continuous bilayer to few-layer MoS2 film. The mobility value of ~29 cm(2)/Vs and current on/off ratio on the order of ~10(4) were obtained for bilayer MoS2. The mobility increased up to ~173-181 cm(2)/Vs, respectively, for few-layer MoS2. The mobility of our bilayer MoS2 FETs is larger than any previously reported values of single to bilayer MoS2 grown on SiO2/Si substrate with a SiO2 gate oxide. Moreover, our few-layer MoS2 FETs exhibited the highest mobility value ever reported for any MoS2 FETs with a SiO2 gate oxide. It is presumed that the high mobility behavior of our film could be attributed to low charged impurities of our film and dielectric screening effect by an interfacial MoOxSiy layer. The combined preparation route of RF sputtering and post-deposition annealing process opens up the novel possibility of mass and batch production of MoS2 film.

  10. Large-area, continuous and high electrical performances of bilayer to few layers MoS2 fabricated by RF sputtering via post-deposition annealing method.

    PubMed

    Hussain, Sajjad; Singh, Jai; Vikraman, Dhanasekaran; Singh, Arun Kumar; Iqbal, Muhammad Zahir; Khan, Muhammad Farooq; Kumar, Pushpendra; Choi, Dong-Chul; Song, Wooseok; An, Ki-Seok; Eom, Jonghwa; Lee, Wan-Gyu; Jung, Jongwan

    2016-01-01

    We report a simple and mass-scalable approach for thin MoS2 films via RF sputtering combined with the post-deposition annealing process. We have prepared as-sputtered film using a MoS2 target in the sputtering system. The as-sputtered film was subjected to post-deposition annealing to improve crystalline quality at 700 °C in a sulfur and argon environment. The analysis confirmed the growth of continuous bilayer to few-layer MoS2 film. The mobility value of ~29 cm(2)/Vs and current on/off ratio on the order of ~10(4) were obtained for bilayer MoS2. The mobility increased up to ~173-181 cm(2)/Vs, respectively, for few-layer MoS2. The mobility of our bilayer MoS2 FETs is larger than any previously reported values of single to bilayer MoS2 grown on SiO2/Si substrate with a SiO2 gate oxide. Moreover, our few-layer MoS2 FETs exhibited the highest mobility value ever reported for any MoS2 FETs with a SiO2 gate oxide. It is presumed that the high mobility behavior of our film could be attributed to low charged impurities of our film and dielectric screening effect by an interfacial MoOxSiy layer. The combined preparation route of RF sputtering and post-deposition annealing process opens up the novel possibility of mass and batch production of MoS2 film. PMID:27492282

  11. Large-area, continuous and high electrical performances of bilayer to few layers MoS2 fabricated by RF sputtering via post-deposition annealing method

    NASA Astrophysics Data System (ADS)

    Hussain, Sajjad; Singh, Jai; Vikraman, Dhanasekaran; Singh, Arun Kumar; Iqbal, Muhammad Zahir; Khan, Muhammad Farooq; Kumar, Pushpendra; Choi, Dong-Chul; Song, Wooseok; An, Ki-Seok; Eom, Jonghwa; Lee, Wan-Gyu; Jung, Jongwan

    2016-08-01

    We report a simple and mass-scalable approach for thin MoS2 films via RF sputtering combined with the post-deposition annealing process. We have prepared as-sputtered film using a MoS2 target in the sputtering system. The as-sputtered film was subjected to post-deposition annealing to improve crystalline quality at 700 °C in a sulfur and argon environment. The analysis confirmed the growth of continuous bilayer to few-layer MoS2 film. The mobility value of ~29 cm2/Vs and current on/off ratio on the order of ~104 were obtained for bilayer MoS2. The mobility increased up to ~173–181 cm2/Vs, respectively, for few-layer MoS2. The mobility of our bilayer MoS2 FETs is larger than any previously reported values of single to bilayer MoS2 grown on SiO2/Si substrate with a SiO2 gate oxide. Moreover, our few-layer MoS2 FETs exhibited the highest mobility value ever reported for any MoS2 FETs with a SiO2 gate oxide. It is presumed that the high mobility behavior of our film could be attributed to low charged impurities of our film and dielectric screening effect by an interfacial MoOxSiy layer. The combined preparation route of RF sputtering and post-deposition annealing process opens up the novel possibility of mass and batch production of MoS2 film.

  12. Ion beam thruster shield

    NASA Technical Reports Server (NTRS)

    Power, J. L. (Inventor)

    1976-01-01

    An ion thruster beam shield is provided that comprises a cylindrical housing that extends downstream from the ion thruster and a plurality of annular vanes which are spaced along the length of the housing, and extend inwardly from the interior wall of the housing. The shield intercepts and stops all charge exchange and beam ions, neutral propellant, and sputter products formed due to the interaction of beam and shield emanating from the ion thruster outside of a fixed conical angle from the thruster axis. Further, the shield prevents the sputter products formed during the operation of the engine from escaping the interior volume of the shield.

  13. Recent advancements in sputter-type heavy negative ion sources

    SciTech Connect

    Alton, G.D.

    1989-01-01

    Significant advancement have been made in sputter-type negative ion sources which utilize direct surface ionization, or a plasma to form the positive ion beam used to effect sputtering of samples containing the material of interest. Typically, such sources can be used to generate usable beam intensities of a few ..mu..A to several mA from all chemically active elements, depending on the particular source and the electron affinity of the element in question. The presentation will include an introduction to the fundamental processes underlying negative ion formation by sputtering from a low work function surface and several sources will be described which reflect the progress made in this technology. 21 refs., 9 figs., 1 tab.

  14. Sputtering effect of low-energy ions on biological target: The analysis of sputtering product of urea and capsaicin

    NASA Astrophysics Data System (ADS)

    Zhang, Lili; Xu, Xue; Wu, Yuejin

    2013-08-01

    Sputtering is a process whereby atoms are ejected from a solid target material due to bombardment of the target by energetic particles. Recent years, ion implantation was successfully applied to biological research based on the fragments sputtering and form open paths in cell structure caused by ion sputtering. In this study, we focused on urea and chilli pepper pericarp samples implanted with N+ and Ar+ ions. To investigate the sputtering effect, we designed a collecting unit containing a disk sample and a glass pipe. The urea content and capsaicin content recovered from glass pipes were adopted to represent the sputtering product. The result of urea showed that the sputtering effect is positively correlated with the ion energy and dose, also affected by the ion type. The result of capsaicin was different from that of urea at 20 keV and possibly due to biological complex composition and structure. Therefore the sputtering yield depended on both the parameters of incident ions and the state of target materials. The sputtering yield of urea was also simulated by computational method achieved through the TRIM program. The trajectories of primary and recoiled atoms were calculated on the basis of the binary collision approximation using Monte Carlo method. The experimental results were much higher than the calculated results. The possible explanation is that in the physical model the target were assumed as a disordered lattice and independent atoms, which is much less complicated than that of the biological models.

  15. Dynamic modeling and analysis of the PZT-bonded composite Timoshenko beams: Spectral element method

    NASA Astrophysics Data System (ADS)

    Lee, Usik; Kim, Daehwan; Park, Ilwook

    2013-03-01

    The health of thin laminated composite beams is often monitored using the ultrasonic guided waves excited by wafer-type piezoelectric transducers (PZTs). Thus, for the smart composite beams which consist of a laminated composite base beam and PZT layers, it is very important to develop a very reliable mathematical model and to use a very accurate computational method to predict accurate dynamic characteristics at very high ultrasonic frequency. In this paper, the axial-bending-shear-lateral contraction coupled differential equations of motion are derived first by the Hamilton's principle with Lagrange multipliers. The smart composite beam is represented by a Timoshenko beam model by adopting the first-order shear deformation theory (FSDT) for the laminated composite base beam. The axial deformation of smart composite beam is improved by taking into account the effects of lateral contraction by adopting the concept of Mindlin-Herrmann rod theory. The spectral element model is then formulated by the variation approach from coupled differential equations of motion transformed into the frequency domain via the discrete Fourier transform. The high accuracy of the present spectral element model is verified by comparing with other solution methods: the finite element model developed in this paper and the commercial FEA package ANSYS. Finally the dynamics and wave characteristics of some example smart composite beams are investigated through the numerical studies.

  16. Approximate methods for predicting interlaminar shear stiffness of laminated and sandwich beams

    NASA Astrophysics Data System (ADS)

    Roy, Ajit K.; Verchery, Georges

    1993-01-01

    Several approximate closed form expressions exist in the literature for predicting the effective interlaminar shear stiffness (G13) of laminated composite beams. The accuracy of these approximate methods depends on the number of layers present in the laminated beam, the relative layer thickness and layer stacking sequence, and the beam length to depth ratio. The objective of this work is to evaluate approximate methods for predicting G13 by comparing its predictions with that of an accurate method, and then find the range where the simple closed form expressions for predicting G13 can be applicable. A comparative study indicates that all the approximate methods included here give good prediction of G13 when the laminate is made of a large number of repeated sublaminates. Further, the parabolic shear stress distribution function yields a reasonably accurate prediction of G13 even for a relatively small number of layers in the laminate. A similar result is also presented for sandwich beams.

  17. Modeling laser beam diffraction and propagation by the mode-expansion method.

    PubMed

    Snyder, James J

    2007-08-01

    In the mode-expansion method for modeling propagation of a diffracted beam, the beam at the aperture can be expanded as a weighted set of orthogonal modes. The parameters of the expansion modes are chosen to maximize the weighting coefficient of the lowest-order mode. As the beam propagates, its field distribution can be reconstructed from the set of weighting coefficients and the Gouy phase of the lowest-order mode. We have developed a simple procedure to implement the mode-expansion method for propagation through an arbitrary ABCD matrix, and we have demonstrated that it is accurate in comparison with direct calculations of diffraction integrals and much faster.

  18. Magnetron sputtered boron films and TI/B multilayer structures

    DOEpatents

    Makowiecki, D.M.; Jankowski, A.F.

    1993-04-20

    A method is described for the production of thin boron and titanium/boron films by magnetron sputter deposition. The amorphous boron films contain no morphological growth features, unlike those found when thin films are prepared by various physical vapor deposition processes. Magnetron sputter deposition method requires the use of a high density crystalline boron sputter target which is prepared by hot isostatic pressing. Thin boron films prepared by this method are useful for ultra-thin band pass filters as well as the low Z element in low Z/high Z mirrors which enhance reflectivity from grazing to normal incidence.

  19. Magnetron sputtered boron films and Ti/B multilayer structures

    DOEpatents

    Makowiecki, Daniel M.; Jankowski, Alan F.

    1995-01-01

    A method is described for the production of thin boron and titanium/boron films by magnetron sputter deposition. The amorphous boron films contain no morphological growth features, unlike those found when thin films are prepared by various physical vapor deposition processes. Magnetron sputter deposition method requires the use of a high density crystalline boron sputter target which is prepared by hot isostatic pressing. Thin boron films prepared by this method are useful for ultra-thin band pass filters as well as the low Z element in low Z/high Z mirrors which enhance reflectivity from grazing to normal incidence.

  20. Magnetron sputtered boron films and Ti/B multilayer structures

    DOEpatents

    Makowiecki, D.M.; Jankowski, A.F.

    1995-02-14

    A method is described for the production of thin boron and titanium/boron films by magnetron sputter deposition. The amorphous boron films contain no morphological growth features, unlike those found when thin films are prepared by various physical vapor deposition processes. Magnetron sputter deposition method requires the use of a high density crystalline boron sputter target which is prepared by hot isostatic pressing. Thin boron films prepared by this method are useful for ultra-thin band pass filters as well as the low Z element in low Z/high Z mirrors which enhance reflectivity from grazing to normal incidence. 6 figs.

  1. Magnetron sputtered boron films and TI/B multilayer structures

    DOEpatents

    Makowiecki, Daniel M.; Jankowski, Alan F.

    1993-01-01

    A method is described for the production of thin boron and titanium/boron films by magnetron sputter deposition. The amorphous boron films contain no morphological growth features, unlike those found when thin films are prepared by various physical vapor deposition processes. Magnetron sputter deposition method requires the use of a high density crystalline boron sputter target which is prepared by hot isostatic pressing. Thin boron films prepared by this method are useful for ultra-thin band pass filters as well as the low Z element in low Z/high Z mirrors which enhance reflectivity from grazing to normal incidence.

  2. Proton beam therapy: A promising method of locoregional cancer control

    SciTech Connect

    Slater, J.M.; Preston, W. )

    1990-01-01

    Proton beams offer superior characteristics for clinical radiation therapy, including the capability to localize precisely the dose to the desired target volume. Such precision enables the radiation therapist to give higher doses to the tumor while avoiding intolerable doses to adjacent normal tissues. Locoregional control is thus increased, and treatment morbidity and side effects are decreased. When it opens in late spring 1990, Loma Linda University Medical Center's proton treatment facility will feature the world's first accelerator and proton therapy system designed for patient care. During the next decade, other similarly-designed proton therapy systems will be built in Canada, England, France, Belgium, Germany, Japan, and South Africa, as well as at Massachusetts General Hospital in the United States.

  3. Simulation and beam line experiments for the superconducting ECRion source VENUS

    SciTech Connect

    Todd, Damon S.; Leitner, Daniela; Grote, David P.; Lyneis, ClaudeM.

    2007-09-10

    The particle-in-cell code Warp has been enhanced toincorporate both two- and three-dimensional sheath extraction modelsgiving Warp the capability of simulating entire ion beam transportsystems including the extraction of beams from plasma sources. In thisarticle we describe a method of producing initial ion distributions forplasma extraction simulations in electron cyclotron resonance (ECR) ionsources based on experimentally measured sputtering on the source biaseddisc. Using this initialization method, we present preliminary resultsfor extraction and transport simulations of an oxygen beam and comparethem with experimental beam imaging on a quartz viewing plate for thesuperconducting ECR ion source VENUS.

  4. Applications of ion beam technology

    NASA Technical Reports Server (NTRS)

    Gelerinter, E.; Spielberg, N.

    1980-01-01

    Wire adhesion in steel belted radial tires; carbon fibers and composite; cold welding, brazing, and fabrication; hydrogen production, separation, and storage; membrane use; catalysis; sputtering and texture; and ion beam implantation are discussed.

  5. Intergalactic medium metal enrichment through dust sputtering

    NASA Astrophysics Data System (ADS)

    Bianchi, Simone; Ferrara, Andrea

    2005-04-01

    We study the motion of dust grains into the intergalactic medium (IGM) around redshift z= 3, to test the hypothesis that grains can efficiently pollute the gas with metals through sputtering. We use the results available in the literature for radiation-driven dust ejection from galaxies as initial conditions and follow the motion onwards. Via this mechanism, grains are ejected into the IGM with velocities >100 km s-1 as they move supersonically, grains can be efficiently eroded by non-thermal sputtering. However, Coulomb and collisional drag forces effectively reduce the charged grain velocity. Up-to-date sputtering yields for graphite and silicate (olivine) grains have been derived using the code TRANSPORT OF IONS IN MATTER (TRIM), for which we provide analytic fits. After training our method on a homogeneous density case, we analyse the grain motion and sputtering in the IGM density field as derived from a Λ cold dark matter (CDM) cosmological simulation at z= 3.27. We found that only large (a>~ 0.1μm) grains can travel up to considerable distances (few ×100 kpc physical) before being stopped. Resulting metallicities show a well-defined trend with overdensity δ. The maximum metallicities are reached for 10 < δ < 100[corresponding to systems, in quasi-stellar object (QSO) absorption spectra, with 14.5 < log N(HI) < 16]. However the distribution of sputtered metals is very inhomogeneous, with only a small fraction of the IGM volume polluted by dust sputtering (filling factors of 18 per cent for Si and 6 per cent for C). For the adopted size distribution, grains are never completely destroyed; nevertheless, the extinction and gas photoelectric heating effects resulting from this population of intergalactic grains are well below current detection limits.

  6. Method and apparatus for measuring the momentum, energy, power, and power density profile of intense particle beams

    DOEpatents

    Gammel, George M.; Kugel, Henry W.

    1992-10-06

    A method and apparatus for determining the power, momentum, energy, and power density profile of high momentum mass flow. Small probe projectiles of appropriate size, shape and composition are propelled through an intense particle beam at equal intervals along an axis perpendicular to the beam direction. Probe projectiles are deflected by collisions with beam particles. The net beam-induced deflection of each projectile is measured after it passes through the intense particle beam into an array of suitable detectors.

  7. A method of forming a high-quality electron beam for free electron masers

    SciTech Connect

    Samsonov, S.V.; Bratman, V.L.; Manuilov, V.N.

    1995-12-31

    A large number of electron microwave devices require initially rectilinear high-quality electron beams for effective operation. In FEMS such beams are pumped up to sufficiently high operating-oscillation velocity and small initial particle oscillations (cyclotron oscillations if the beam is focused by an axial magnetic field) can lead to a rather large transverse velocity spread and, correspondingly, axial velocity spread. Thus, an acute problem for these devices (essentially more important than for Cherenkov-type devices) is the formation of a beam in which electrons initially move along the axis with minimum oscillations. A new method to form such a beam by a two-electrode axially-symmetrical gun of simple configuration immersed in a uniform axial magnetic field is discussed in this paper. This method allows to improve the quality of an electron beam passing through a narrow anode outlet. It is well-known that the anode aperture acts as an electrostatic lens and disperses the electron beam. In the presence of an axial magnetic field this unwanted dispersing action can be compensated simultaneously for all electrons of the paraxial electron beam by means of a magnetic field generated by a small additional coil placed down-stream from the anode aperture. If the coil length is equal to half the electron Larmor step, then the action of the border cod fields comes to two kicks which, being correctly phased, compensate the spurious rotary electron velocities. Computer simulations using the EPOSR-code intended for the calculation of electron guns both for the temperature- and space-charge-limited regimes prove the effectiveness of this method. In particular, for a version of field-emission gun the correcting coil reduces about five times the maximum transverse velocity in the beam. Positive effect from applying this method was proved at a realization of a high-efficiency CARM-oscillator.

  8. Systems and methods for detecting an image of an object using multi-beam imaging from an X-ray beam having a polychromatic distribution

    SciTech Connect

    Parham, Christopher A; Zhong, Zhong; Pisano, Etta; Connor, Jr., Dean M

    2015-03-03

    Systems and methods for detecting an image of an object using a multi-beam imaging system from an x-ray beam having a polychromatic energy distribution are disclosed. According to one aspect, a method can include generating a first X-ray beam having a polychromatic energy distribution. Further, the method can include positioning a plurality of monochromator crystals in a predetermined position to directly intercept the first X-ray beam such that a plurality of second X-ray beams having predetermined energy levels are produced. Further, an object can be positioned in the path of the second X-ray beams for transmission of the second X-ray beams through the object and emission from the object as transmitted X-ray beams. The transmitted X-ray beams can each be directed at an angle of incidence upon one or more crystal analyzers. Further, an image of the object can be detected from the beams diffracted from the analyzer crystals.

  9. Beam injection improvement for electron cyclotron resonance charge breeders

    SciTech Connect

    Lamy, T.; Angot, J.; Sortais, P.; Thuillier, T.

    2012-02-15

    The injection of a 1+ beam into an electron cyclotron resonance (ECR) charge breeder is classically performed through a grounded tube placed on its axis at the injection side. This tube presents various disadvantages for the operation of an ECR charge breeder. First experiments without a grounded tube show a better use of the microwave power and a better charge breeding efficiency. The optical acceptance of the charge breeder without decelerating tube allows the injection of high intensity 1+ ion beams at high energy, allowing metals sputtering inside the ion source. The use of this method for refractory metallic ion beams production is evaluated.

  10. Ion-beam apparatus and method for analyzing and controlling integrated circuits

    DOEpatents

    Campbell, A.N.; Soden, J.M.

    1998-12-01

    An ion-beam apparatus and method for analyzing and controlling integrated circuits are disclosed. The ion-beam apparatus comprises a stage for holding one or more integrated circuits (ICs); a source means for producing a focused ion beam; and a beam-directing means for directing the focused ion beam to irradiate a predetermined portion of the IC for sufficient time to provide an ion-beam-generated electrical input signal to a predetermined element of the IC. The apparatus and method have applications to failure analysis and developmental analysis of ICs and permit an alteration, control, or programming of logic states or device parameters within the IC either separate from or in combination with applied electrical stimulus to the IC for analysis thereof. Preferred embodiments of the present invention including a secondary particle detector and an electron floodgun further permit imaging of the IC by secondary ions or electrons, and allow at least a partial removal or erasure of the ion-beam-generated electrical input signal. 4 figs.

  11. Ion-beam apparatus and method for analyzing and controlling integrated circuits

    DOEpatents

    Campbell, Ann N.; Soden, Jerry M.

    1998-01-01

    An ion-beam apparatus and method for analyzing and controlling integrated circuits. The ion-beam apparatus comprises a stage for holding one or more integrated circuits (ICs); a source means for producing a focused ion beam; and a beam-directing means for directing the focused ion beam to irradiate a predetermined portion of the IC for sufficient time to provide an ion-beam-generated electrical input signal to a predetermined element of the IC. The apparatus and method have applications to failure analysis and developmental analysis of ICs and permit an alteration, control, or programming of logic states or device parameters within the IC either separate from or in combination with applied electrical stimulus to the IC for analysis thereof. Preferred embodiments of the present invention including a secondary particle detector and an electron floodgun further permit imaging of the IC by secondary ions or electrons, and allow at least a partial removal or erasure of the ion-beam-generated electrical input signal.

  12. A reconstruction method for cone-beam differential x-ray phase-contrast computed tomography.

    PubMed

    Fu, Jian; Velroyen, Astrid; Tan, Renbo; Zhang, Junwei; Chen, Liyuan; Tapfer, Arne; Bech, Martin; Pfeiffer, Franz

    2012-09-10

    Most existing differential phase-contrast computed tomography (DPC-CT) approaches are based on three kinds of scanning geometries, described by parallel-beam, fan-beam and cone-beam. Due to the potential of compact imaging systems with magnified spatial resolution, cone-beam DPC-CT has attracted significant interest. In this paper, we report a reconstruction method based on a back-projection filtration (BPF) algorithm for cone-beam DPC-CT. Due to the differential nature of phase contrast projections, the algorithm restrains from differentiation of the projection data prior to back-projection, unlike BPF algorithms commonly used for absorption-based CT data. This work comprises a numerical study of the algorithm and its experimental verification using a dataset measured with a three-grating interferometer and a micro-focus x-ray tube source. Moreover, the numerical simulation and experimental results demonstrate that the proposed method can deal with several classes of truncated cone-beam datasets. We believe that this feature is of particular interest for future medical cone-beam phase-contrast CT imaging applications.

  13. Compensation method for random drifts of laser beams based on moving average feedback control

    NASA Astrophysics Data System (ADS)

    Zhang, Lixia; Wang, Ruilin; Lin, Wumei; Liao, Zhijie

    2012-10-01

    In order to eliminate the measurement errors caused by the instability of laser beams, a real-time compensation algorithms for the random drifts of laser beams based on moving average (MA) correction mechanism was presented. By establishing a correction model with two fast steering mirrors in the beam delivery path and analyzing the pulse to pulse beam fluctuation, a real-time beam drifts correction is implemented based on closed loop feedback control, which especially focuses on reducing the pulse to pulse drifts and ground fluctuations. The simulation results show that this algorithm can control beam drifts effectively. Optimal MA can be reduced to 3n-1/2 times (n--pulse numbers in a window) without the ground vibrations. There are a series of improvements on the moving standard deviation (MSD) as well. MSD get a sudden decline at the window pulse. Meanwhile, the drifts can be restrained while loading the ground vibrations without any big jump, and the dropping amplitude is bigger than without the ground vibration. MSD drop while the whole system is controlled by this compensation method and the results are stable. The key of this compensation method for random drifts of laser beams based on moving average feedback control lies in the appropriate corrections formula. What is more, this algorithm which is practical can achieve high precision control of direction drifts.

  14. Ion beam microtexturing of surfaces

    NASA Technical Reports Server (NTRS)

    Robinson, R. S.

    1981-01-01

    Some recent work in surface microtecturing by ion beam sputtering is described. The texturing is accomplished by deposition of an impurity onto a substrate while simultaneously bombarding it with an ion beam. A summary of the theory regarding surface diffusion of impurities and the initiation of cone formation is provided. A detailed experimental study of the time-development of individual sputter cones is described. A quasi-liquid coating was observed that apparently reduces the sputter rate of the body of a cone compared to the bulk material. Experimental measurements of surface diffusion activation energies are presented for a variety of substrate-seed combinations and range from about 0.3 eV to 1.2 eV. Observations of apparent crystal structure in sputter cones are discussed. Measurements of the critical temperature for cone formation are also given along with a correlation of critical temperature with substrate sputter rate.

  15. Electron beam inspection methods for imprint lithography at 32 nm

    NASA Astrophysics Data System (ADS)

    Selinidis, Kosta; Thompson, Ecron; Sreenivasan, S. V.; Resnick, Douglas J.

    2009-01-01

    Step and Flash Imprint Lithography redefines nanoimprinting. This novel technique involves the field-by-field deposition and exposure of a low viscosity resist deposited by jetting technology onto the substrate. The patterned mask is lowered into the fluid which then quickly flows into the relief patterns in the mask by capillary action. Following this filling step, the resist is crosslinked under UV radiation, and then the mask is removed leaving a patterned solid on the substrate. Compatibility with existing CMOS processes requires a mask infrastructure in which resolution, inspection and repair are all addressed. The purpose of this paper is to understand the limitations of inspection at half pitches of 32 nm and below. A 32 nm programmed defect mask was fabricated. Patterns included in the mask consisted of an SRAM Metal 1 cell, dense lines, and dense arrays of pillars. Programmed defect sizes started at 4 nm and increased to 48 nm in increments of 4 nm. Defects in both the mask and imprinted wafers were characterized scanning electron microscopy and the measured defect areas were calculated. These defects were then inspected using a KLA-T eS35 electron beam wafer inspection system. Defect sizes as small as 12 nm were detected, and detection limits were found to be a function of defect type.

  16. Xenon Sputter Yield Measurements for Ion Thruster Materials

    NASA Technical Reports Server (NTRS)

    Williams, John D.; Gardner, Michael M.; Johnson, Mark L.; Wilbur, Paul J.

    2003-01-01

    In this paper, we describe a technique that was used to measure total and differential sputter yields of materials important to high specific impulse ion thrusters. The heart of the technique is a quartz crystal monitor that is swept at constant radial distance from a small target region where a high current density xenon ion beam is aimed. Differential sputtering yields were generally measured over a full 180 deg arc in a plane that included the beam centerline and the normal vector to the target surface. Sputter yield results are presented for a xenon ion energy range from 0.5 to 10 keV and an angle of incidence range from 0 deg to 70 deg from the target surface normal direction for targets consisting of molybdenum, titanium, solid (Poco) graphite, and flexible graphite (grafoil). Total sputter yields are calculated using a simple integration procedure and comparisons are made to sputter yields obtained from the literature. In general, the agreement between the available data is good. As expected for heavy xenon ions, the differential and total sputter yields are found to be strong functions of angle of incidence. Significant under- and over-cosine behavior is observed at low- and high-ion energies, respectively. In addition, strong differences in differential yield behavior are observed between low-Z targets (C and Ti) and high-Z targets (Mo). Curve fits to the differential sputter yield data are provided. They should prove useful to analysts interested in predicting the erosion profiles of ion thruster components and determining where the erosion products re-deposit.

  17. Sputtered protective coatings for die casting dies

    NASA Technical Reports Server (NTRS)

    Mirtich, M. J.; Nieh, C. Y.; Wallace, J. F.

    1981-01-01

    This investigation determined whether selected ion beam sputtered coatings on H-13 die steel would have the potential of improving the thermal fatigue behavior of the steel used as a die in aluminum die casting. The coatings were selected to test candidate insulators and metals capable of providing protection of the die surface. The studies indicate that 1 micrometer thick W and Pt coatings reduced the thermal fatigue more than any other coating tested and are candidates to be used on a die surface to increase die life.

  18. Device and method for generating a beam of acoustic energy from a borehole, and applications thereof

    DOEpatents

    Vu, Cung Khac; Sinha, Dipen N; Pantea, Cristian; Nihei, Kurt T; Schmitt, Denis P; Skelt, Christopher

    2013-10-01

    In some aspects of the invention, a method of generating a beam of acoustic energy in a borehole is disclosed. The method includes generating a first acoustic wave at a first frequency; generating a second acoustic wave at a second frequency different than the first frequency, wherein the first acoustic wave and second acoustic wave are generated by at least one transducer carried by a tool located within the borehole; transmitting the first and the second acoustic waves into an acoustically non-linear medium, wherein the composition of the non-linear medium produces a collimated beam by a non-linear mixing of the first and second acoustic waves, wherein the collimated beam has a frequency based upon a difference between the first frequency and the second frequency; and transmitting the collimated beam through a diverging acoustic lens to compensate for a refractive effect caused by the curvature of the borehole.

  19. A spectral method for halo particle definition in intense mismatched beams

    SciTech Connect

    Dorf, Mikhail A.; Davidson, Ronald C.; Startsev, Edward A.

    2011-04-15

    An advanced spectral analysis of a mismatched charged particle beam propagating through a periodic focusing transport lattice is utilized in particle-in-cell (PIC) simulations. It is found that the betatron frequency distribution function of a mismatched space-charge-dominated beam has a bump-on-tail structure attributed to the beam halo particles. Based on this observation, a new spectral method for halo particle definition is proposed that provides the opportunity to carry out a quantitative analysis of halo particle production by a beam mismatch. In addition, it is shown that the spectral analysis of the mismatch relaxation process provides important insights into the emittance growth attributed to the halo formation and the core relaxation processes. Finally, the spectral method is applied to the problem of space-charge transport limits.

  20. New Spectral Method for Halo Particle Definition in Intense Mis-matched Beams

    SciTech Connect

    Dorf, Mikhail A.; Davidson, Ronald C.; Startsev, Edward A.

    2011-04-27

    An advanced spectral analysis of a mis-matched charged particle beam propagating through a periodic focusing transport lattice is utilized in particle-in-cell (PIC) simulations. It is found that the betatron frequency distribution function of a mismatched space-charge-dominated beam has a bump-on-tail structure attributed to the beam halo particles. Based on this observation, a new spectral method for halo particle definition is proposed that provides the opportunity to carry out a quantitative analysis of halo particle production by a beam mismatch. In addition, it is shown that the spectral analysis of the mismatch relaxation process provides important insights into the emittance growth attributed to the halo formation and the core relaxation processes. Finally, the spectral method is applied to the problem of space-charge transport limits.

  1. THE METHODS OF PRODUCING AND ANALYZING POLARIZED NEUTRON BEAMS FOR HYSPEC AT THE SNS.

    SciTech Connect

    SHAPIRO, S.M.; PASSELL, L.; ZALIZNYAK, A.; GHOSH, V.J.; LEONHARDT, W.L.; HAGEN, M.E.

    2005-04-25

    The Hybrid Spectrometer (HYSPEC), under construction at the SNS on beam line 14B, is the only inelastic scattering instrument designed to enable polarization of the incident and the scattered neutron beams. A Heusler monochromator will replace the graphite crystal for producing polarized neutrons. In the scattered beam it is planned to use a collimator--multi-channel supermirror bender array to analyze the polarization of the scattered beam over the final energy range from 5-20 meV. Other methods of polarization analysis under consideration such as transmission filters using He{sup 3}, Sm, and polarized protons are considered. Their performance is estimated and a comparison of the various methods of polarization is made.

  2. Evaporation model for beam based additive manufacturing using free surface lattice Boltzmann methods

    NASA Astrophysics Data System (ADS)

    Klassen, Alexander; Scharowsky, Thorsten; Körner, Carolin

    2014-07-01

    Evaporation plays an important role in many technical applications including beam-based additive manufacturing processes, such as selective electron beam or selective laser melting (SEBM/SLM). In this paper, we describe an evaporation model which we employ within the framework of a two-dimensional free surface lattice Boltzmann method. With this method, we solve the hydrodynamics as well as thermodynamics of the molten material taking into account the mass and energy losses due to evaporation and the recoil pressure acting on the melt pool. Validation of the numerical model is performed by measuring maximum melt depths and evaporative losses in samples of pure titanium and Ti-6Al-4V molten by an electron beam. Finally, the model is applied to create processing maps for an SEBM process. The results predict that the penetration depth of the electron beam, which is a function of the acceleration voltage, has a significant influence on evaporation effects.

  3. System and method for delivery of neutron beams for medical therapy

    DOEpatents

    Nigg, David W.; Wemple, Charles A.

    1999-01-01

    A neutron delivery system that provides improved capability for tumor control during medical therapy. The system creates a unique neutron beam that has a bimodal or multi-modal energy spectrum. This unique neutron beam can be used for fast-neutron therapy, boron neutron capture therapy (BNCT), or both. The invention includes both an apparatus and a method for accomplishing the purposes of the invention.

  4. System and method for delivery of neutron beams for medical therapy

    DOEpatents

    Nigg, D.W.; Wemple, C.A.

    1999-07-06

    A neutron delivery system that provides improved capability for tumor control during medical therapy is disclosed. The system creates a unique neutron beam that has a bimodal or multi-modal energy spectrum. This unique neutron beam can be used for fast-neutron therapy, boron neutron capture therapy (BNCT), or both. The invention includes both an apparatus and a method for accomplishing the purposes of the invention. 5 figs.

  5. Transport Phenomena of Off-Axis Sputtering Deposition

    NASA Technical Reports Server (NTRS)

    Zhu, S.; Su, C. H.; Lehoczky, S. L.; Zhang, S.; Whitaker, Ann F. (Technical Monitor)

    2001-01-01

    Various high quality epitaxial films, especially oxides, have been synthesized using off-axis sputtering deposition. In this presentation, we report the experiment results of ZnO films grown by the off-axis sputtering deposition. Films were synthesized in temperatures ranged from room temperature to 600 C, and pressures from 5 mTorr to 150 mTorr. Film growth rate was measured by surface profilometer, ellipsometer, and wavelength dispersive spectrometry. Due to the collisions between the sputtered species and the residue gases, the kinetic energy of species was reduced and the transport of depositing species changed from a ballistic movement for low pressure to a diffuse drift for high pressure in which the transport species were almost thermalized. The measurements show an increase of growth rates along the gravity vector when the Knodson (Knudsen??) number of transport species is less than 0.05, which suggests that gravity affected the transport characterization in off-axis sputtering deposition. Because the product of pressure (p) and travel distance (d) of sputtered species, p exceeds several mTorr-cm during film deposition, the classical simulations for sputtering process in high vacuum system may not be applied. Based on these experimental measurements, a transport process of the off-axis sputtering deposition is proposed. Several methods including the Monte Carlo method and gravity-driven flow dynamics simulation will be discussed.

  6. Magnetron Sputtered Gold Contacts on N-gaas

    NASA Technical Reports Server (NTRS)

    Buonaquisti, A. D.; Matson, R. J.; Russell, P. E.; Holloway, P. H.

    1984-01-01

    Direct current planar magnetron sputtering was used to deposit gold Schottky barrier electrical contacts on n-type GaAs of varying doping densities. The electrical character of the contact was determined from current voltage and electron beam induced voltage data. Without reducing the surface concentration of carbon and oxide, the contacts were found to be rectifying. There is evidence that energetic neutral particles reflected from the magnetron target strike the GaAs and cause interfacial damage similar to that observed for ion sputtering. Particle irradiation of the surface during contact deposition is discussed.

  7. Interlaminar Stresses by Refined Beam Theories and the Sinc Method Based on Interpolation of Highest Derivative

    NASA Technical Reports Server (NTRS)

    Slemp, Wesley C. H.; Kapania, Rakesh K.; Tessler, Alexander

    2010-01-01

    Computation of interlaminar stresses from the higher-order shear and normal deformable beam theory and the refined zigzag theory was performed using the Sinc method based on Interpolation of Highest Derivative. The Sinc method based on Interpolation of Highest Derivative was proposed as an efficient method for determining through-the-thickness variations of interlaminar stresses from one- and two-dimensional analysis by integration of the equilibrium equations of three-dimensional elasticity. However, the use of traditional equivalent single layer theories often results in inaccuracies near the boundaries and when the lamina have extremely large differences in material properties. Interlaminar stresses in symmetric cross-ply laminated beams were obtained by solving the higher-order shear and normal deformable beam theory and the refined zigzag theory with the Sinc method based on Interpolation of Highest Derivative. Interlaminar stresses and bending stresses from the present approach were compared with a detailed finite element solution obtained by ABAQUS/Standard. The results illustrate the ease with which the Sinc method based on Interpolation of Highest Derivative can be used to obtain the through-the-thickness distributions of interlaminar stresses from the beam theories. Moreover, the results indicate that the refined zigzag theory is a substantial improvement over the Timoshenko beam theory due to the piecewise continuous displacement field which more accurately represents interlaminar discontinuities in the strain field. The higher-order shear and normal deformable beam theory more accurately captures the interlaminar stresses at the ends of the beam because it allows transverse normal strain. However, the continuous nature of the displacement field requires a large number of monomial terms before the interlaminar stresses are computed as accurately as the refined zigzag theory.

  8. A new method to calculate the beam charge for an integrating current transformer.

    PubMed

    Wu, Yuchi; Han, Dan; Zhu, Bin; Dong, Kegong; Tan, Fang; Gu, Yuqiu

    2012-09-01

    The integrating current transformer (ICT) is a magnetic sensor widely used to precisely measure the charge of an ultra-short-pulse charged particle beam generated by traditional accelerators and new laser-plasma particle accelerators. In this paper, we present a new method to calculate the beam charge in an ICT based on circuit analysis. The output transfer function shows an invariable signal profile for an ultra-short electron bunch, so the function can be used to evaluate the signal quality and calculate the beam charge through signal fitting. We obtain a set of parameters in the output function from a standard signal generated by an ultra-short electron bunch (about 1 ps in duration) at a radio frequency linear electron accelerator at Tsinghua University. These parameters can be used to obtain the beam charge by signal fitting with excellent accuracy. PMID:23020370

  9. Analysis of thermal depolarization compensation using full vectorial beam propagation method in laser amplifiers

    NASA Astrophysics Data System (ADS)

    Hartmann, Rainer; Pflaum, Christoph; Graupeter, Thomas

    2015-03-01

    We developed a complex physical model for simulating laser amplifiers to numerically analyze birefringence effects. This model includes pump configuration, thermal lensing effects, birefringence, and beam propagation in the laser amplifier. Temperature, deformation, and stress inside the laser crystal were calculated using a three-dimensional finite element analysis (FEA). The pump configuration is simulated using a three-dimensional ray tracing or an approximation based on super-Gaussian functions. Our simulations show the depolarization of a linearly polarized electromagnetic wave in a cylindrical laser crystal. These simulations were performed using a three-dimensional full vectorial beam propagation method (VBPM). Stress induced birefringence can be compensated well for moderate pumping powers. High power amplification requires sensitive alignment. Our simulation technique calculates the influence of the photo-elastic effect inside the laser crystal accurately. Detailed knowledge about beam waist and depolarization is needed to develop compensation techniques for high power output beams with low depolarization losses.

  10. Formation of dielectric silicon compounds by reactive magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Veselov, D. S.; Voronov, Yu A.

    2016-09-01

    The paper is devoted to the study of reactive magnetron sputtering of the silicon target in the ambient of inert argon gas with reactive gas, nitrogen or oxygen. The magnetron was powered by two mid-frequency generators of a rectangular pulse of opposite polarity. The negative polarity pulse provides the sputtering of the target. The positive polarity pulse provides removal of accumulated charge from the surface of the target. This method does not require any special devices of resistances matching and provides continuous sputtering of the target.

  11. High rate sputter deposition of wear resistant tantalum coatings

    SciTech Connect

    Matson, D.W.; Merz, M.D.; McClanahan, E.D.

    1991-11-01

    The refractory nature and high ductility of body centered cubic (bcc) phase tantalum makes it a suitable material for corrosion- and wear-resistant coatings on surfaces which are subjected to high stresses and harsh chemical and erosive environments. Sputter deposition can produce thick tantalum films but is prone to forming the brittle tetragonal beta phase of this material. Efforts aimed at forming thick bcc phase tantalum coatings in both flat plate and cylindrical geometries by high-rate triode sputtering methods are discussed. In addition to substrate temperature, the bcc-to-beta phase ratio in sputtered tantalum coatings is shown to be sensitive to other substrate surface effects.

  12. Analysis of transverse shear strains in pre-twisted thick beams using variational asymptotic method

    SciTech Connect

    Ameen, Maqsood M.; Harursampath, Dineshkumar E-mail: dinesh@aero.iisc.ernet.in

    2015-03-10

    The cross-sectional stiffness matrix is derived for a pre-twisted, moderately thick beam made of transversely isotropic materials and having rectangular cross sections. An asymptotically-exact methodology is used to model the anisotropic beam from 3-D elasticity, without any further assumptions. The beam is allowed to have large displacements and rotations, but small strain is assumed. The strain energy is computed making use of the beam constitutive law and kinematical relations derived with the inclusion of geometrical nonlinearities and an initial twist. The energy functional is minimized making use of the Variational Asymptotic Method (VAM), thereby reducing the cross section to a point on the beam reference line with appropriate properties, forming a 1-D constitutive law. VAM is a mathematical technique employed in the current problem to rigorously split the 3-D analysis of beams into two: a 2-D analysis over the beam cross-sectional domain, which provides a compact semi-analytical form of the properties of the cross sections, and a nonlinear 1-D analysis of the beam ref-erence curve. In this method, as applied herein, the cross-sectional analysis is performed asymptotically by taking advantage of a material small parameter and two geometric small parameters. 3-D strain components are derived using kinematics and arranged in orders of the small parameters. Closed-form expressions are derived for the 3-D non-linear warping and stress fields. Warping functions are obtained by the minimization of strain energy subject to certain set of constraints that render the 1-D strain measures well-defined. The zeroth-order 3-D warping field thus yielded is then used to integrate the 3-D strain energy density over the cross section, resulting in the 1-D strain energy density, which in turn helps identify the corresponding cross-sectional stiffness matrix. The model is capable of predicting interlaminar and transverse shear stresses accurately up to first order.

  13. Energy exchange between a laser beam and charged particles using inverse transition radiation and method for its use

    DOEpatents

    Kimura, Wayne D.; Romea, Richard D.; Steinhauer, Loren C.

    1998-01-01

    A method and apparatus for exchanging energy between relativistic charged particles and laser radiation using inverse diffraction radiation or inverse transition radiation. The beam of laser light is directed onto a particle beam by means of two optical elements which have apertures or foils through which the particle beam passes. The two apertures or foils are spaced by a predetermined distance of separation and the angle of interaction between the laser beam and the particle beam is set at a specific angle. The separation and angle are a function of the wavelength of the laser light and the relativistic energy of the particle beam. In a diffraction embodiment, the interaction between the laser and particle beams is determined by the diffraction effect due to the apertures in the optical elements. In a transition embodiment, the interaction between the laser and particle beams is determined by the transition effect due to pieces of foil placed in the particle beam path.

  14. X-ray beam method for displacement measurement in hostile environments

    NASA Technical Reports Server (NTRS)

    Jordan, Eric H.; Pease, D. M.; Canistraro, H.; Brew, Dale

    1989-01-01

    A new method of extensometry using an X-ray beam was devised, and the results of current testing reveal it to be highly feasible. This technique has been shown to provide a non-contacting system that is immune to problems associated with density variations in gaseous environments, that plague currently available optical methods. This advantage is a result of the non-refracting penetrating nature of X-rays. The method is based on X-ray-induced X-ray fluorescence of targets, which subsequently serve as fudicial markers. Some target materials have melting points over 1600 degrees C which will facilitate measurement at extremely high temperatures. A highly focused intense X-ray beam, which is produced using a Johansen 'bent crystal', is then scanned across the target, which responds by fluorescing X-rays when stimulated by the incident beam. This secondary radiation is monitored using a detector. By carefully measuring beam orientation, change in target edge position can be determined. Many variations on this basic theme are now possible such as two targets demarcating a gage length, or a beam shadowing method using opaque targets.

  15. Double freeform surfaces design for laser beam shaping with Monge-Ampère equation method

    NASA Astrophysics Data System (ADS)

    Zhang, Yaqin; Wu, Rengmao; Liu, Peng; Zheng, Zhenrong; Li, Haifeng; Liu, Xu

    2014-11-01

    This paper presents a method for designing double freeform surfaces to simultaneously control the intensity distribution and phase profile of the laser beam. Based on Snell’s law, the conservation law of energy and the constraint imposed on the optical path length between the input and output wavefronts, the double surfaces design is converted into an elliptic Monge-Ampère (MA) equation with a nonlinear boundary problem. A generalized approach is introduced to find the numerical solution of the design model. Two different layouts of the beam shaping system are introduced and detailed comparisons are also made between the two layouts. Design examples are given and the results indicate that good matching is achieved by the MA method with more than 98% of the energy efficiency. The MA method proposed in this paper provides a reasonably good means for laser beam shaping.

  16. A novel method involving Matlab coding to determine the distribution of a collimated ionizing radiation beam

    NASA Astrophysics Data System (ADS)

    Ioan, M.-R.

    2016-08-01

    In ionizing radiation related experiments, precisely knowing of the involved parameters it is a very important task. Some of these experiments are involving the use of electromagnetic ionizing radiation such are gamma rays and X rays, others make use of energetic charged or not charged small dimensions particles such are protons, electrons, neutrons and even, in other cases, larger accelerated particles such are helium or deuterium nuclei are used. In all these cases the beam used to hit an exposed target must be previously collimated and precisely characterized. In this paper, a novel method to determine the distribution of the collimated beam involving Matlab coding is proposed. The method was implemented by using of some Pyrex glass test samples placed in the beam where its distribution and dimension must be determined, followed by taking high quality pictures of them and then by digital processing the resulted images. By this method, information regarding the doses absorbed in the exposed samples volume are obtained too.

  17. A new optical image encryption method based on multi-beams interference and vector composition

    NASA Astrophysics Data System (ADS)

    Chen, Linfei; Liu, Jingyu; Wen, Jisen; Gao, Xiong; Mao, Haidan; Shi, Xiaoyan; Qu, Qingling

    2015-06-01

    In this paper, a new method for optical image encryption based on multi-beams interference principle and vector composition is proposed. In this encryption, the original image is encoded into n-1 phase only masks which are regarded as the keys of the encryption system and a ciphertext according to multi-beams interference principle and vector composition. In decryption process, n beams of parallel incident light illuminate at the phase only masks and the ciphertext, and we can obtain the decrypted image at output plane after Fourier transforms. The security of the proposed method is discussed, finding that no decrypted image can be obtained only when all the keys used are right. Furthermore, the keys can be stored separately resulting in improving the security of encryption system. Computer simulation results are presented to verify the validity of the proposed method.

  18. Experimental Scatter Correction Methods in Industrial X-Ray Cone-Beam CT

    NASA Astrophysics Data System (ADS)

    Schörner, K.; Goldammer, M.; Stephan, J.

    2011-06-01

    Scattered radiation presents a major source of image degradation in industrial cone-beam computed tomography systems. Scatter artifacts introduce streaks, cupping and a loss of contrast in the reconstructed CT-volumes. In order to overcome scatter artifacts, we present two complementary experimental correction methods: the beam-stop array (BSA) and an inverse technique we call beam-hole array (BHA). Both correction methods are examined in comparative measurements where it is shown that the aperture-based BHA technique has practical and scatter-reducing advantages over the BSA. The proposed BHA correction method is successfully applied to a large-scale industrial specimen whereby scatter artifacts are reduced and contrast is enhanced significantly.

  19. Comparison of Computational Techniques for Estimating Solar Wind Ion Sputtering Yields on Silicates

    NASA Astrophysics Data System (ADS)

    Hutcherson, Adam; Schaible, Micah; Johnson, Robert

    2015-11-01

    Bodies in space containing silicates and oxides continuously experience ion collisions that result in surface sputtering. Knowledge of sputter yields allows for the estimation of destruction rates of small grains in protoplanetary clouds and predictions of exosphere densities around small bodies to be carried out. However, sputter yields for astrophysical type materials are poorly constrained and there has been little work to compare computational models to experimental results. Theoretical models using sputtering yields commonly use the software SRIM to simulate ion implantation into solids. However, the program has been shown to give results that are in poor agreement with experimental data for low energy (<10 keV) incident ions typical of the solar wind. Here we compare predicted sputtering yields from SRIM and a program based on the TRIM.Sp algorithm called SDTrimSP. Both programs were designed to simulate atomic collisions in amorphous targets with predefined stoichiometric compositions and atomic binding energies. During the simulation, a one dimensional target is exposed to an incident beam of particles with a composition and energy determined by the user. The binary collision approximation is used to handle the collisions and the energy loss of the incident particle and energy gain of the recoil is then calculated. This process is repeated for resulting collisions until all particle energies fall below a preset value or have left the target. However, SDTrimSP can account for changing surface composition with increasing irradiation fluence and also provides the option to use several different surface binding energy models.Simulations of H and He irradiation of simple oxides were run using both programs at energies in the 0.1-10 keV range and compared to published experimental data. SDTrimSP was seen to display a better agreement with this data than SRIM, making it a more reliable method of estimating sputtering yields. The model was then expanded to simulate

  20. Method for maximizing the brightness of the bunches in a particle injector by converting a highly space-charged beam to a relativistic and emittance-dominated beam

    DOEpatents

    Hannon, Fay

    2016-08-02

    A method for maximizing the brightness of the bunches in a particle injector by converting a highly space-charged beam to a relativistic and emittance-dominated beam. The method includes 1) determining the bunch charge and the initial kinetic energy of the highly space-charge dominated input beam; 2) applying the bunch charge and initial kinetic energy properties of the highly space-charge dominated input beam to determine the number of accelerator cavities required to accelerate the bunches to relativistic speed; 3) providing the required number of accelerator cavities; and 4) setting the gradient of the radio frequency (RF) cavities; and 5) operating the phase of the accelerator cavities between -90 and zero degrees of the sinusoid of phase to simultaneously accelerate and bunch the charged particles to maximize brightness, and until the beam is relativistic and emittance-dominated.

  1. System and method for sonic wave measurements using an acoustic beam source

    SciTech Connect

    Vu, Cung Khac; Sinha, Dipen N.; Pantea, Cristian

    2015-08-11

    A method and system for investigating structure near a borehole are described herein. The method includes generating an acoustic beam by an acoustic source; directing at one or more azimuthal angles the acoustic beam towards a selected location in a vicinity of a borehole; receiving at one or more receivers an acoustic signal, the acoustic signal originating from a reflection or a refraction of the acoustic wave by a material at the selected location; and analyzing the received acoustic signal to characterize features of the material around the borehole.

  2. A finite element beam propagation method for simulation of liquid crystal devices.

    PubMed

    Vanbrabant, Pieter J M; Beeckman, Jeroen; Neyts, Kristiaan; James, Richard; Fernandez, F Anibal

    2009-06-22

    An efficient full-vectorial finite element beam propagation method is presented that uses higher order vector elements to calculate the wide angle propagation of an optical field through inhomogeneous, anisotropic optical materials such as liquid crystals. The full dielectric permittivity tensor is considered in solving Maxwell's equations. The wide applicability of the method is illustrated with different examples: the propagation of a laser beam in a uniaxial medium, the tunability of a directional coupler based on liquid crystals and the near-field diffraction of a plane wave in a structure containing micrometer scale variations in the transverse refractive index, similar to the pixels of a spatial light modulator.

  3. Multiple-mode nonlinear free and forced vibrations of beams using finite element method

    NASA Technical Reports Server (NTRS)

    Mei, Chuh; Decha-Umphai, Kamolphan

    1987-01-01

    Multiple-mode nonlinear free and forced vibration of a beam is analyzed by the finite element method. The geometric nonlinearity is investigated. Inplane displacement and inertia (IDI) are also considered in the formulation. Harmonic force matrix is derived and explained. Nonlinear free vibration can be simply treated as a special case of the general forced vibration by setting the harmonic force matrix equal to zero. The effect of the higher modes is more pronouced for the clamped supported beam than the simply supported one. Beams without IDI yield more effect of the higher modes than the one with IDI. The effects of IDI are to reduce nonlinearity. For beams with end supports restrained from axial movement (immovable cases), only the hardening type nonlinearity is observed. However, beams of small slenderness ratio (L/R = 20) with movable end supports, the softening type nonlinearity is found. The concentrated force case yields a more severe response than the uniformly distributed force case. Finite element results are in good agreement with the solution of simple elliptic response, harmonic balance method, and Runge-Kutte method and experiment.

  4. Discrete Frame-Based Gaussian Beam Methods for Seismic Modeling and Imaging

    NASA Astrophysics Data System (ADS)

    Li, C.; Nowack, R. L.

    2004-12-01

    In this presentation we describe the use of discrete frame-based Gaussian beam summation methods with application to modeling and imaging. In this approach a windowed expansion is used where the individual functions are matched to paraxial Gaussian beams which are then propagated into the medium. The Gaussian windowed expansion is performed on an over-sampled position-wavenumber lattice where over-sampling is required for stability. The only window-based transform allowing critical sampling is a Wilson basis or local cosine transform which requires Gaussian beams to be launched in pairs losing some of localization properties of the method. For over-sampled Gaussian windowed expansions, dual functions must be computed to reconstruct the field, but for sufficiently high over-sampling the dual function becomes closer to a Gaussian function. An early application of windowed expansions using Gaussian beams was given by Hill (1990) for seismic migration. He also derived early sampling criteria for the expansion. Here we will give applications of the method to forward modeling including waves in a layer over half-space for a range of beam parameters. We also provide several applications of seismic imaging using surface sources and teleseismic waves incident from below.

  5. Anion formation in sputter ion sources by neutral resonant ionization.

    PubMed

    Vogel, J S

    2016-02-01

    Focused Cs(+) beams in sputter ion sources create mm-diameter pits supporting small plasmas that control anionization efficiencies. Sputtering produces overwhelmingly neutral products that the plasma can ionize as in a charge-change vapor. Electron capture between neutral atoms rises as the inverse square of the difference between the ionization potential of the Cs state and the electron affinity of the sputtered atom, allowing resonant ionization at very low energies. A plasma collision-radiation model followed electronic excitation up to Cs(7d). High modeled Cs(7d) in a 0.5 mm recess explains the 80 μA/mm(2) C(-) current density compared to the 20 μA/mm(2) from a 1 mm recess. PMID:26931912

  6. Anion formation in sputter ion sources by neutral resonant ionization

    NASA Astrophysics Data System (ADS)

    Vogel, J. S.

    2016-02-01

    Focused Cs+ beams in sputter ion sources create mm-diameter pits supporting small plasmas that control anionization efficiencies. Sputtering produces overwhelmingly neutral products that the plasma can ionize as in a charge-change vapor. Electron capture between neutral atoms rises as the inverse square of the difference between the ionization potential of the Cs state and the electron affinity of the sputtered atom, allowing resonant ionization at very low energies. A plasma collision-radiation model followed electronic excitation up to Cs(7d). High modeled Cs(7d) in a 0.5 mm recess explains the 80 μA/mm2 C- current density compared to the 20 μA/mm2 from a 1 mm recess.

  7. Digital detection method design of the optic error of the beam expander

    NASA Astrophysics Data System (ADS)

    Yu, Hao; Liu, Bingqi; Yang, Zhuo; Liu, Shiying; Ying, Jiaju

    2014-12-01

    The beam expander is a device used for extending the action radius of the optical system by removing the optical axis parallel. It is usually composed by a pair of plane mirror or two total reflection prism which is installed parallel. However, limited by manufacturing and installation progress, optical axis parallelism errors can be generated while it is hardly to guarantee the two plane mirror or the two total reflection prism installed completely parallel to each other. To detect the optical axis parallelism error of the beam expander quantitatively, a digital optical axis parallelism error detection method for the beam expander is designed taking advantage of the CCD technology and the Image processing technology. In this method, the reticule of the collimator is regarded as the target at infinity. Firstly, the reticule of the collimator images on the CCD camera directly. Keep the pose of the CCD camera unchanged. Then the parallel optical beam is shifted into the beam expander detected by removing of the pentaprism, and the reticule of the collimator images on the same CCD camera again. The location of the collimator reticule center image on the CCD camera is determined respectively through the corresponding image processing. The error of the beam expander is calculated by comparing the coordinate of the collimator reticule center image. An experiment platform is set up based on and the feasibility of this method is verified that the accuracy of the detection method is less than 3''; this method has the advantage of simple operation, high practicality and high accuracy.

  8. Deposition of n-Type Bi2Te3 Thin Films on Polyimide by Using RF Magnetron Co-Sputtering Method.

    PubMed

    Joo, Sung-Jae; Kim, Bong Seo; Min, Bok-Ki; Oh, Min Wook; Lee, Ji-Eun; Ryu, Byung Ki; Lee, Hee Woong; Park, Su Dong

    2015-10-01

    Bi2Te3 thermoelectric thin films were deposited on the flexible polyimide substrates by RF magnetron co-sputtering of a Bi and a Te targets. The influence of the substrate temperature and RF power on the microstructure, chemical composition, and the thermoelectric properties of the sputtered films was investigated by using scanning electron microscopy, X-ray diffraction, energy dispersive X-ray spectroscopy, and in-plane resistivity/Seebeck coefficient measurement. It was shown that the thermoelectric properties of the films depend sensitively on the Bi/Te chemical composition ratio and the substrate temperature, and the layered structure was clearly observed from the cross section of the (00L)-oriented, nearly stoichiometric Bi2Te3 films when the substrate temperature is higher than 250 °C. As-deposited Bi2Te3 films deposited at 300 °C show the highest power factor of 0.97 mW/K(2)m and the Seebeck coefficient of -193 μV/K at 32 °C, which also have (00L) preferred orientation and the layered structure. The durability of the Bi2Te3 films on polyimide against repeated bending was also tested by monitoring the film resistance, and it was concluded that the Bi2Te3 films are applicable reliably on the curved surfaces with the radius of curvature larger than 5 mm.

  9. Combinatorial deposition by r.f. magnetron sputtering using subdivided powder targets as new development method for thin-film phosphors

    NASA Astrophysics Data System (ADS)

    Miyata, Toshihiro; Mochizuki, Yuu; Minami, Tadatsugu

    2006-01-01

    A new technique incorporating combinatorial deposition to develop new multicomponent oxide and oxynitride thin-film phosphors by r.f. magnetron sputtering is demonstrated using subdivided powder targets. By sputtering with a powder target that is subdivided into two or more parts, phosphor thin films with a chemical composition that varied across the substrate surface could be successfully prepared. In Zn IISi 1-XGe XO 4:Mn thin films, for example, the chemical composition (Ge content (X)) could be optimized to obtain higher electroluminescent and photoluminescent emission intensities by using only one deposition with the new technique. As a result, a high luminances of 11800 and 1536 cd/m2 for green emission was obtained in Zn IISi 0.6Ge 0.4O 4:Mn TFEL device driven at 1 kHz and 60 Hz, respectively. In ((AlN) 1-X-(CaO) X):Eu thin films, for example, the chemical composition (CaO content (X)) could be optimized to obtain higher electroluminescent and photoluminescent emission intensities by using only one deposition with the new technique. As a result, a luminance of 170 cd/m2 for red emission was obtained in an ((AlN) 0.1-(CaO) 0.9):Eu TFEL device driven at 1 kHz.

  10. The Ion Surfing Transport Method for Beam Thermalization Devices

    NASA Astrophysics Data System (ADS)

    Gehring, Amanda; Brodeur, Maxime; Bollen, Georg; Morrissey, David; Schwarz, Stefan

    2012-10-01

    Projectile fragments can be thermalized in buffer gas to supply rare ions to low energy experiments. We present here studies of ``ion surfing'' [1], a new method for transporting ions through gas-filled devices that use a RF gradient to repel the ions from the walls. Instead of relying on a fixed potential gradient to guide the thermal ions through the length of the cell, the ions are transported by a traveling wave superimposed on the RF field. The travelling wave is formed by an oscillating sinusoidal field applied to repeating sets of four electrodes. The field on each subsequent electrode is offset by 90 degrees in phase. Transport efficiency and velocity measurements were performed for rubidium and potassium ions over a wide range of conditions. With the optimal parameters currently attainable, >90% efficient transport over 10 cm at 80 mbar was observed for Rb and K ions with max velocities of 75 m/s and 50 m/s, respectively. The measurements were conducted in preparation for the cyclotron gas cell at the National Cyclotron Laboratory at Michigan State University. We will present the results of the latest measurements and comparisons to detailed simulations. [4pt] [1] G. Bollen, Int. J. Mass Spect. 299 (2011) 131

  11. Device and method for generating a beam of acoustic energy from a borehole, and applications thereof

    SciTech Connect

    Vu, Cung Khac; Sinha, Dipen N.; Pantea, Cristian; Nihei, Kurt T.; Schmitt, Denis P.; Skelt, Chirstopher

    2013-10-15

    In some aspects of the invention, a method of generating a beam of acoustic energy in a borehole is disclosed. The method includes generating a first acoustic wave at a first frequency; generating a second acoustic wave at a second frequency different than the first frequency, wherein the first acoustic wave and second acoustic wave are generated by at least one transducer carried by a tool located within the borehole; transmitting the first and the second acoustic waves into an acoustically non-linear medium, wherein the composition of the non-linear medium produces a collimated beam by a non-linear mixing of the first and second acoustic waves, wherein the collimated beam has a frequency based upon a difference between the first frequency range and the second frequency, and wherein the non-linear medium has a velocity of sound between 100 m/s and 800 m/s.

  12. Method for reduction of selected ion intensities in confined ion beams

    DOEpatents

    Eiden, Gregory C.; Barinaga, Charles J.; Koppenaal, David W.

    1998-01-01

    A method for producing an ion beam having an increased proportion of analyte ions compared to carrier gas ions is disclosed. Specifically, the method has the step of addition of a charge transfer gas to the carrier analyte combination that accepts charge from the carrier gas ions yet minimally accepts charge from the analyte ions thereby selectively neutralizing the carrier gas ions. Also disclosed is the method as employed in various analytical instruments including an inductively coupled plasma mass spectrometer.

  13. Single-slice reconstruction method for helical cone-beam differential phase-contrast CT.

    PubMed

    Fu, Jian; Chen, Liyuan

    2014-01-01

    X-ray phase-contrast computed tomography (PC-CT) can provide the internal structure information of biomedical specimens with high-quality cross-section images and has become an invaluable analysis tool. Here a simple and fast reconstruction algorithm is reported for helical cone-beam differential PC-CT (DPC-CT), which is called the DPC-CB-SSRB algorithm. It combines the existing CB-SSRB method of helical cone-beam absorption-contrast CT with the differential nature of DPC imaging. The reconstruction can be performed using 2D fan-beam filtered back projection algorithm with the Hilbert imaginary filter. The quality of the results for large helical pitches is surprisingly good. In particular, with this algorithm comparable quality is obtained using helical cone-beam DPC-CT data with a normalized pitch of 10 to that obtained using the traditional inter-row interpolation reconstruction with a normalized pitch of 2. This method will push the future medical helical cone-beam DPC-CT imaging applications.

  14. Shear Lag in Box Beams Methods of Analysis and Experimental Investigations

    NASA Technical Reports Server (NTRS)

    Kuhn, Paul; Chiarito, Patrick T

    1942-01-01

    The bending stresses in the covers of box beams or wide-flange beams differ appreciably from the stresses predicted by the ordinary bending theory on account of shear deformation of the flanges. The problem of predicting these differences has become known as the shear-lag problem. The first part of this paper deals with methods of shear-lag analysis suitable for practical use. The second part of the paper describes strain-gage tests made by the NACA to verify the theory. Three tests published by other investigators are also analyzed by the proposed method. The third part of the paper gives numerical examples illustrating the methods of analysis. An appendix gives comparisons with other methods, particularly with the method of Ebner and Koller.

  15. Highly Accurate Beam Torsion Solutions Using the p-Version Finite Element Method

    NASA Technical Reports Server (NTRS)

    Smith, James P.

    1996-01-01

    A new treatment of the classical beam torsion boundary value problem is applied. Using the p-version finite element method with shape functions based on Legendre polynomials, torsion solutions for generic cross-sections comprised of isotropic materials are developed. Element shape functions for quadrilateral and triangular elements are discussed, and numerical examples are provided.

  16. A case study of analysis methods for large deflections of a cantilever beam

    NASA Technical Reports Server (NTRS)

    Craig, L. D.

    1994-01-01

    A load case study of geometric nonlinear large deflections of a cantilever beam is presented. The bending strain must remain elastic. Closed form solution and finite element methods of analysis are illustrated and compared for three common load cases. A nondimensional nomogram for each case is presented in the summary.

  17. Sputter coating of microspherical substrates by levitation

    DOEpatents

    Lowe, A.T.; Hosford, C.D.

    Microspheres are substantially uniformly coated with metals or nonmetals by simltaneously levitating them and sputter coating them at total chamber pressures less than 1 torr. A collimated hole structure comprising a parallel array of upwardly projecting individual gas outlets is machined out to form a dimple. Glass microballoons,, which are particularly useful in laser fusion applications, can be substantially uniformly coated using the coating method and apparatus.

  18. Sputter coating of microspherical substrates by levitation

    DOEpatents

    Lowe, Arthur T.; Hosford, Charles D.

    1981-01-01

    Microspheres are substantially uniformly coated with metals or nonmetals by simultaneously levitating them and sputter coating them at total chamber pressures less than 1 torr. A collimated hole structure 12 comprising a parallel array of upwardly projecting individual gas outlets 16 is machined out to form a dimple 11. Glass microballoons, which are particularly useful in laser fusion applications, can be substantially uniformly coated using the coating method and apparatus.

  19. Investigations Into Electronic Stopping Regime Sputtering of Uranium Tetrafluoride.

    NASA Astrophysics Data System (ADS)

    Meins, Charles Kenneth, Jr.

    1982-03-01

    Yields were measured for ('235)U sputtered from UF(,4) by ('16)O, ('19)F, and ('35)Cl over the energy range (TURN).12 to 1.5 MeV/amu using a charge equilibrated beam in the stripped beam arrangement for all the incident ions and in the transmission arrangement for ('19)F and ('35)Cl. In addition, yields were measured for ('19)F incident in a wide range of discrete charge states. The angular dependence of all the measured yields were consistent with cos . The stripped beam and transmission data were well fit by the form. (DIAGRAM, TABLE OR GRAPHIC OMITTED...PLEASE SEE DAI). where (epsilon) was the ion energy in MeV/amu and z(,eq)((epsilon)) was taken from Zeigler(80). The fitted values of B for the various sets of data were consistent with a constant B(,0) equal to 36.3 (+OR-) 2.7, independent of incident ion. The fitted values of A show no consistent variation with incident ion although a difference can be noted between the stripped beam and transmission values, the transmission values being higher. The incident charge data were well fit by the assumptions that the sputtering yield depended locally on a power of the incident ion charge and that the sputtering from the surface is exponentially correlated to conditions in the bulk. The equilibrated sputtering yields derived from these data are in agreement with the stripped beam yields. In addition, to aid in the understanding of these data, the data of Hakansson(80,81a,81b) were examined and contrasted with the UF(,4) results. The thermal models of Seiberling(80) and Watson(81) were discussed and compared to the data.

  20. Future carbon beams at SPIRAL1 facility: which method is the most efficient?

    PubMed

    Maunoury, L; Delahaye, P; Angot, J; Dubois, M; Dupuis, M; Frigot, R; Grinyer, J; Jardin, P; Leboucher, C; Lamy, T

    2014-02-01

    Compared to in-flight facilities, Isotope Separator On-Line ones can in principle produce significantly higher radioactive ion beam intensities. On the other hand, they have to cope with delays for the release and ionization which make the production of short-lived isotopes ion beams of reactive and refractory elements particularly difficult. Many efforts are focused on extending the capabilities of ISOL facilities to those challenging beams. In this context, the development of carbon beams is triggering interest [H. Frånberg, M. Ammann, H. W. Gäggeler, and U. Köster, Rev. Sci. Instrum. 77, 03A708 (2006); M. Kronberger, A. Gottberg, T. M. Mendonca, J. P. Ramos, C. Seiffert, P. Suominen, and T. Stora, in Proceedings of the EMIS 2012 [Nucl. Instrum. Methods Phys. Res. B Production of molecular sideband radioisotope beams at CERN-ISOLDE using a Helicon-type plasma ion source (to be published)]: despite its refractory nature, radioactive carbon beams can be produced from molecules (CO or CO2), which can subsequently be broken up and multi-ionized to the required charge state in charge breeders or ECR sources. This contribution will present results of experiments conducted at LPSC with the Phoenix charge breeder and at GANIL with the Nanogan ECR ion source for the ionization of carbon beams in the frame of the ENSAR and EMILIE projects. Carbon is to date the lightest condensable element charge bred with an ECR ion source. Charge breeding efficiencies will be compared with those obtained using Nanogan ECRIS and charge breeding times will be presented as well. PMID:24593427

  1. Future carbon beams at SPIRAL1 facility: Which method is the most efficient?

    NASA Astrophysics Data System (ADS)

    Maunoury, L.; Delahaye, P.; Angot, J.; Dubois, M.; Dupuis, M.; Frigot, R.; Grinyer, J.; Jardin, P.; Leboucher, C.; Lamy, T.

    2014-02-01

    Compared to in-flight facilities, Isotope Separator On-Line ones can in principle produce significantly higher radioactive ion beam intensities. On the other hand, they have to cope with delays for the release and ionization which make the production of short-lived isotopes ion beams of reactive and refractory elements particularly difficult. Many efforts are focused on extending the capabilities of ISOL facilities to those challenging beams. In this context, the development of carbon beams is triggering interest [H. Frånberg, M. Ammann, H. W. Gäggeler, and U. Köster, Rev. Sci. Instrum. 77, 03A708 (2006); M. Kronberger, A. Gottberg, T. M. Mendonca, J. P. Ramos, C. Seiffert, P. Suominen, and T. Stora, in Proceedings of the EMIS 2012 [Nucl. Instrum. Methods Phys. Res. B Production of molecular sideband radioisotope beams at CERN-ISOLDE using a Helicon-type plasma ion source (to be published)]: despite its refractory nature, radioactive carbon beams can be produced from molecules (CO or CO2), which can subsequently be broken up and multi-ionized to the required charge state in charge breeders or ECR sources. This contribution will present results of experiments conducted at LPSC with the Phoenix charge breeder and at GANIL with the Nanogan ECR ion source for the ionization of carbon beams in the frame of the ENSAR and EMILIE projects. Carbon is to date the lightest condensable element charge bred with an ECR ion source. Charge breeding efficiencies will be compared with those obtained using Nanogan ECRIS and charge breeding times will be presented as well.

  2. Future carbon beams at SPIRAL1 facility: which method is the most efficient?

    PubMed

    Maunoury, L; Delahaye, P; Angot, J; Dubois, M; Dupuis, M; Frigot, R; Grinyer, J; Jardin, P; Leboucher, C; Lamy, T

    2014-02-01

    Compared to in-flight facilities, Isotope Separator On-Line ones can in principle produce significantly higher radioactive ion beam intensities. On the other hand, they have to cope with delays for the release and ionization which make the production of short-lived isotopes ion beams of reactive and refractory elements particularly difficult. Many efforts are focused on extending the capabilities of ISOL facilities to those challenging beams. In this context, the development of carbon beams is triggering interest [H. Frånberg, M. Ammann, H. W. Gäggeler, and U. Köster, Rev. Sci. Instrum. 77, 03A708 (2006); M. Kronberger, A. Gottberg, T. M. Mendonca, J. P. Ramos, C. Seiffert, P. Suominen, and T. Stora, in Proceedings of the EMIS 2012 [Nucl. Instrum. Methods Phys. Res. B Production of molecular sideband radioisotope beams at CERN-ISOLDE using a Helicon-type plasma ion source (to be published)]: despite its refractory nature, radioactive carbon beams can be produced from molecules (CO or CO2), which can subsequently be broken up and multi-ionized to the required charge state in charge breeders or ECR sources. This contribution will present results of experiments conducted at LPSC with the Phoenix charge breeder and at GANIL with the Nanogan ECR ion source for the ionization of carbon beams in the frame of the ENSAR and EMILIE projects. Carbon is to date the lightest condensable element charge bred with an ECR ion source. Charge breeding efficiencies will be compared with those obtained using Nanogan ECRIS and charge breeding times will be presented as well.

  3. Future carbon beams at SPIRAL1 facility: Which method is the most efficient?

    SciTech Connect

    Maunoury, L. Delahaye, P.; Dubois, M.; Dupuis, M.; Frigot, R.; Grinyer, J.; Jardin, P.; Leboucher, C.

    2014-02-15

    Compared to in-flight facilities, Isotope Separator On-Line ones can in principle produce significantly higher radioactive ion beam intensities. On the other hand, they have to cope with delays for the release and ionization which make the production of short-lived isotopes ion beams of reactive and refractory elements particularly difficult. Many efforts are focused on extending the capabilities of ISOL facilities to those challenging beams. In this context, the development of carbon beams is triggering interest [H. Frånberg, M. Ammann, H. W. Gäggeler, and U. Köster, Rev. Sci. Instrum. 77, 03A708 (2006); M. Kronberger, A. Gottberg, T. M. Mendonca, J. P. Ramos, C. Seiffert, P. Suominen, and T. Stora, in Proceedings of the EMIS 2012 [Nucl. Instrum. Methods Phys. Res. B Production of molecular sideband radioisotope beams at CERN-ISOLDE using a Helicon-type plasma ion source (to be published)]: despite its refractory nature, radioactive carbon beams can be produced from molecules (CO or CO{sub 2}), which can subsequently be broken up and multi-ionized to the required charge state in charge breeders or ECR sources. This contribution will present results of experiments conducted at LPSC with the Phoenix charge breeder and at GANIL with the Nanogan ECR ion source for the ionization of carbon beams in the frame of the ENSAR and EMILIE projects. Carbon is to date the lightest condensable element charge bred with an ECR ion source. Charge breeding efficiencies will be compared with those obtained using Nanogan ECRIS and charge breeding times will be presented as well.

  4. Dielectric elastomer-based laser beam pointing method with ultraviolet and visible wavelength

    NASA Astrophysics Data System (ADS)

    Hayakawa, Tomohiko; Wang, Lihui; Ishikawa, Masatoshi

    2016-03-01

    We report a novel method to manipulate the direction of a laser beam by controlling the thickness of a dielectric elastomer. The system is controlled by applying different voltages to multi-layers of dielectric elastomers without mechanical movement. We employed laser beams with different wavelengths to test the proposed system, and the experimental results showed that it has an excellent transmittance profile in the ultraviolet and visible wavelength bands, and that we achieved high-precision control in the micrometer range. The results show the feasibility of this technique for laser applications that require high positional accuracy, such as laser cutting, drilling machines, and 3D printing.

  5. Sputtering. [as deposition technique in mechanical engineering

    NASA Technical Reports Server (NTRS)

    Spalvins, T.

    1976-01-01

    This paper primarily reviews the potential of using the sputtering process as a deposition technique; however, the manufacturing and sputter etching aspects are also discussed. Since sputtering is not regulated by classical thermodynamics, new multicomponent materials can be developed in any possible chemical composition. The basic mechanism for dc and rf sputtering is described. Sputter-deposition is described in terms of the unique advantageous features it offers such as versatility, momentum transfer, stoichiometry, sputter-etching, target geometry (coating complex surfaces), precise controls, flexibility, ecology, and sputtering rates. Sputtered film characteristics, such as strong adherence and coherence and film morphology, are briefly evaluated in terms of varying the sputtering parameters. Also described are some of the specific industrial areas which are turning to sputter-deposition techniques.

  6. Large amplitude free vibrations of Timoshenko beams at higher modes using coupled displacement field method

    NASA Astrophysics Data System (ADS)

    Krishna Bhaskar, K.; Meera Saheb, K.

    2015-12-01

    A simple but accurate continuum solution for the shear flexible beam problem using the energy method involves in assuming suitable single term admissible functions for the lateral displacement and total rotation. This leads to two non-linear temporal differential equations in terms of the lateral displacement and the total rotation and are difficult, if not impossible, to solve to obtain the large amplitude fundamental frequencies of beams as a function of the amplitude and slenderness ratios of the vibrating beam. This situation can be avoided if one uses the concept of coupled displacement field where in the fields for lateral displacement and the total rotation are coupled through the static equilibrium equation. In this paper the lateral displacement field is assumed and the field for the total rotation is evaluated through the coupling equation. This approach leads to only one undetermined coefficient which can easily be used in the principle of conservation of total energy of the vibrating beam at a given time, neglecting damping. Finally, through a number of algebraic manipulations, one gets a nonlinear equation of Duffing type which can be solved using any standard method. To demonstrate the simplicity of the method discussed above the problem of large amplitude free vibrations of a uniform shear flexible hinged beam at higher modes with ends immovable to move axially has been solved. The numerical results obtained from the present formulation are in very good agreement with those obtained through finite element and other continuum methods for the fundamental mode, thus demonstrating the efficacy of the proposed method. Also some interesting observations are made with variation of frequency Vs amplitude at different modes.

  7. Directional growth of single crystal Terfenol-D by the electron beam zoning method

    NASA Astrophysics Data System (ADS)

    Wu, Lei; Zhan, Wenshan; Chen, Xichen

    1996-12-01

    Rods of a highly magnetostrictive material, a Tb 0.27Dy 0.73Fe 2- x twin single crystal, were obtained by the electron beam float zone technique. This new electron beam zoning method has the advantages of small melting zone, low power consumption and high temperature gradient. Good <112> preferred orientation growth was confirmed by X-ray diffraction. The samples consist of parallel sheets divided by a small surplus rare-earth-rich phase. The presence of ductile rare-earth sheets would be expected to enhance the strength by retarding crack propagation throughout the brittle matrix. The saturated magnetostriction of the sample grown by electron beam zone-melting reached 1276 × 10 -6, and increased to 1840 × 10 -6 with an applied stress of 15 MPa.

  8. Computation of tightly-focused laser beams in the FDTD method

    PubMed Central

    Çapoğlu, İlker R.; Taflove, Allen; Backman, Vadim

    2013-01-01

    We demonstrate how a tightly-focused coherent TEMmn laser beam can be computed in the finite-difference time-domain (FDTD) method. The electromagnetic field around the focus is decomposed into a plane-wave spectrum, and approximated by a finite number of plane waves injected into the FDTD grid using the total-field/scattered-field (TF/SF) method. We provide an error analysis, and guidelines for the discrete approximation. We analyze the scattering of the beam from layered spaces and individual scatterers. The described method should be useful for the simulation of confocal microscopy and optical data storage. An implementation of the method can be found in our free and open source FDTD software (“Angora”). PMID:23388899

  9. Computation of tightly-focused laser beams in the FDTD method.

    PubMed

    Capoğlu, Ilker R; Taflove, Allen; Backman, Vadim

    2013-01-14

    We demonstrate how a tightly-focused coherent TEMmn laser beam can be computed in the finite-difference time-domain (FDTD) method. The electromagnetic field around the focus is decomposed into a plane-wave spectrum, and approximated by a finite number of plane waves injected into the FDTD grid using the total-field/scattered-field (TF/SF) method. We provide an error analysis, and guidelines for the discrete approximation. We analyze the scattering of the beam from layered spaces and individual scatterers. The described method should be useful for the simulation of confocal microscopy and optical data storage. An implementation of the method can be found in our free and open source FDTD software ("Angora").

  10. Analysis of birefringence effects in laser crystals by full vectorial beam propagation method

    NASA Astrophysics Data System (ADS)

    Hartmann, Rainer; Pflaum, Christoph; Graupeter, Thomas

    2014-05-01

    Modern laser technology demands powerful numerical tools to predict the efficiency of laser configurations. Birefringence has a strong influence on the beam quality and output power of a laser amplifier. We developed a complex physical model for simulating laser amplifiers and analyzing the birefringence effects. This model includes pump configuration, thermal lensing effects, birefringence, and beam propagation in the laser amplifier. The pump configuration is simulated using a complete three-dimensional ray tracing or by an approximation based on super-Gaussian functions. For an accurate modeling of the thermal lensing effect, the deformation of the end faces and the polarization dependent index of refraction was taken into account. Temperature, deformation and stress inside the laser crystal were calculated by a three-dimensional finite element analysis (FEA). In particular, the refractive index was accurately calculated by considering its temperature dependency and the photo elastic effect. This refractive index was used in the simulation of laser beam propagation through an amplifier. These simulations were performed by a complete three-dimensional vectorial beam propagation method (VBPM). The advantage of VBPM is that it can be applied to a polarization dependent index of refraction. This is important when taking into account the birefringence obtained by the photo elastic effect inside the laser crystal. The beam propagation method is based on finite elements on block structured grids as well as a Crank-Nicolson approximation in the propagation direction (FE-BPM). Reflecting boundaries were eliminated by introducing a perfect matching layer (PML). Simulation results show that a complete three-dimensional simulation model was useful in analyzing and optimizing high power laser amplifiers. The value of our model lies in the fact that it can take into account the crystal cut direction. Based on this the birefringence for simulating the laser beam quality and

  11. Hamiltonian methods for the study of polarized proton beam dynamics in accelerators and storage rings

    SciTech Connect

    Balandin, Vladimir; Golubeva, Nina

    1997-02-01

    The equations of classical spin-orbit motion can be extended to a Hamiltonian system in 9-dimensional phase space by introducing a coupled spin-orbit Poisson bracket and Hamiltonian function. After this extension it becomes possible to apply the methods of the theory of Hamiltonian systems to the study of polarized particles beam dynamics in circular accelerators and storage rings. Some of those methods have been implemented in the computer code FORGET-ME-NOT.

  12. Electron beam method and apparatus for obtaining uniform discharges in electrically pumped gas lasers

    DOEpatents

    Fenstermacher, Charles A.; Boyer, Keith

    1986-01-01

    A method and apparatus for obtaining uniform, high-energy, large-volume electrical discharges in the lasing medium of a gas laser whereby a high-energy electron beam is used as an external ionization source to ionize substantially the entire volume of the lasing medium which is then readily pumped by means of an applied potential less than the breakdown voltage of the medium. The method and apparatus are particularly useful in CO.sub.2 laser systems.

  13. Differential Sputtering Behavior of Pyrolytic Graphite and Carbon-Carbon Composite Under Xenon Bombardment

    NASA Technical Reports Server (NTRS)

    Williams, John D.; Johnson, Mark L.; Williams, Desiree D.

    2003-01-01

    A differential sputter yield measurement technique is described, which consists of a quartz crystal monitor that is swept at constant radial distance from a small target region where a high current density xenon ion beam is aimed. This apparatus has been used to characterize the sputtering behavior of various forms of carbon including polycrystalline graphite, pyrolytic graphite, and PVD-infiltrated and pyrolized carbon-carbon composites. Sputter yield data are presented for pyrolytic graphite and carbon-carbon composite over a range of xenon ion energies from 200 eV to 1 keV and angles of incidence from 0 deg (normal incidence) to 60 deg .

  14. Sputtering of cobalt and chromium by argon and xenon ions near the threshold energy region

    NASA Technical Reports Server (NTRS)

    Handoo, A. K.; Ray, P. K.

    1993-01-01

    Sputtering yields of cobalt and chromium by argon and xenon ions with energies below 50 eV are reported. The targets were electroplated on copper substrates. Measurable sputtering yields were obtained from cobalt with ion energies as low as 10 eV. The ion beams were produced by an ion gun. A radioactive tracer technique was used for the quantitative measurement of the sputtering yield. Co-57 and Cr-51 were used as tracers. The yield-energy curves are observed to be concave, which brings into question the practice of finding threshold energies by linear extrapolation.

  15. Development of Kilovoltage X-ray Dosimetry Methods and Their Application to Cone Beam Computed Tomography

    NASA Astrophysics Data System (ADS)

    Lawless, Michael J.

    The increase in popularity of pre-treatment imaging procedures in radiation therapy, such as kilovoltage cone beam computed tomography (CBCT), has been accompanied by an increase in the dose delivered to the patient from these imaging procedures. The measurement of dose from CBCT scans is complicated, as currently available kilovoltage dosimetry protocols are based on air-kerma standards and radiation detectors exhibit large energy responses at the low photon energies used in the imaging procedures. This work aims to provide the tools and methodology needed to measure the dose from these scans more accurately and precisely. Through the use of a validated Monte Carlo (MC) model of the moderately filtered (M-series) x-ray beams at the University of Wisconsin Accredited Dosimetry Calibration Laboratory, dose-to-water rates were obtained in a water phantom for the M-series x-ray beams with tube potentials from 40-250 kVp. The resulting dose-to-water rates were consistent with previously established methods, but had significantly reduced uncertainties. While detectors are commonly used to measure dose in phantom, previous investigations of the energy response of common detectors in the kilovoltage energy range have been limited to in-air geometries. The newly determined dose-to-water rates were used to characterize the in-phantom energy and depth response of thermoluminescent dosimeters and ionization chambers. When compared to previous investigations of the in-air detector response, the impact of scatter and absorption of the photon beam by the water medium was found to have a significant impact on the response of certain detectors. The dose to water in the NIST-traceable M-series x-ray beams was transferred to clinical CBCT beams and the resulting doses agreed with other dose-to-water measurement techniques. The dose to water in the CBCT beams was used to characterize the energy and depth responses of a number of detectors. The energy response in the CBCT beams agreed

  16. Optical Actionometry Of Cathode Material Sputtered Into Plasma Phase Of Glow Discharges

    NASA Astrophysics Data System (ADS)

    Wroński, Zdzisław

    2006-01-01

    Cathode sputtering by glow discharge plasma is the effective solid etching. The emission of optical lines by plasma is a complex process depending on gas used. The peculiar processes such fast ion-sputte-red atom interaction and Penning excitation have been found to contribute much to the emission of optical lines of sputtered species. The optical actionometry of sputtered atoms is not suggested to be a useful method because of a lack of proper cross sections of the above peculiar processes. At present the computer simulation of both etching and characteristics of sputtered atoms in the plasma phase seems to be the preferential method..

  17. A new method to combine 3D reconstruction volumes for multiple parallel circular cone beam orbits

    PubMed Central

    Baek, Jongduk; Pelc, Norbert J.

    2010-01-01

    Purpose: This article presents a new reconstruction method for 3D imaging using a multiple 360° circular orbit cone beam CT system, specifically a way to combine 3D volumes reconstructed with each orbit. The main goal is to improve the noise performance in the combined image while avoiding cone beam artifacts. Methods: The cone beam projection data of each orbit are reconstructed using the FDK algorithm. When at least a portion of the total volume can be reconstructed by more than one source, the proposed combination method combines these overlap regions using weighted averaging in frequency space. The local exactness and the noise performance of the combination method were tested with computer simulations of a Defrise phantom, a FORBILD head phantom, and uniform noise in the raw data. Results: A noiseless simulation showed that the local exactness of the reconstructed volume from the source with the smallest tilt angle was preserved in the combined image. A noise simulation demonstrated that the combination method improved the noise performance compared to a single orbit reconstruction. Conclusions: In CT systems which have overlap volumes that can be reconstructed with data from more than one orbit and in which the spatial frequency content of each reconstruction can be calculated, the proposed method offers improved noise performance while keeping the local exactness of data from the source with the smallest tilt angle. PMID:21089770

  18. Measuring the band structures of periodic beams using the wave superposition method

    NASA Astrophysics Data System (ADS)

    Junyi, L.; Ruffini, V.; Balint, D.

    2016-11-01

    Phononic crystals and elastic metamaterials are artificially engineered periodic structures that have several interesting properties, such as negative effective stiffness in certain frequency ranges. An interesting property of phononic crystals and elastic metamaterials is the presence of band gaps, which are bands of frequencies where elastic waves cannot propagate. The presence of band gaps gives this class of materials the potential to be used as vibration isolators. In many studies, the band structures were used to evaluate the band gaps. The presence of band gaps in a finite structure is commonly validated by measuring the frequency response as there are no direct methods of measuring the band structures. In this study, an experiment was conducted to determine the band structure of one dimension phononic crystals with two wave modes, such as a bi-material beam, using the frequency response at only 6 points to validate the wave superposition method (WSM) introduced in a previous study. A bi-material beam and an aluminium beam with varying geometry were studied. The experiment was performed by hanging the beams freely, exciting one end of the beams, and measuring the acceleration at consecutive unit cells. The measured transfer function of the beams agrees with the analytical solutions but minor discrepancies. The band structure was then determined using WSM and the band structure of one set of the waves was found to agree well with the analytical solutions. The measurements taken for the other set of waves, which are the evanescent waves in the bi-material beams, were inaccurate and noisy. The transfer functions at additional points of one of the beams were calculated from the measured band structure using WSM. The calculated transfer function agrees with the measured results except at the frequencies where the band structure was inaccurate. Lastly, a study of the potential sources of errors was also conducted using finite element modelling and the errors in

  19. Ion-induced oxidation of aluminum during reactive magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Kreiter, Oliver; Grosse-Kreul, Simon; Corbella, Carles; von Keudell, Achim

    2013-04-01

    Particle beam experiments were conducted in an ultra-high-vacuum vessel to mimic target poisoning during reactive magnetron sputtering of aluminum. Aluminum targets were exposed to quantified beams of argon ions, oxygen atoms and molecules, and aluminum vapour. The growth and etch rates were measured in situ by means of an Al-coated quartz crystal microbalance. The chemical state of the target surface was monitored in-situ by real-time Fourier transform infrared spectroscopy. The surface processes were modelled through a set of balance equations providing sputter yields and sticking coefficients. The results indicate that the oxygen uptake of the aluminum surface is enhanced by a factor 1 to 2 by knock-on implantation and that the deposition of aluminum is not affected by the oxidation state of the surface.

  20. Method to eliminate the impact of magnetic fields on the position of the electron beam during EBW

    NASA Astrophysics Data System (ADS)

    Laptenok, V. D.; Druzhinina, A. A.; Murygin, A. V.; Seregin, Yu N.

    2016-04-01

    The paper presents the approximate formulas for calculating the deflection angle and the misalignment of the electron beam from the optical axis of the electron gun caused by the action of magnetic fields during the electron beam welding. Mathematical model of the effect of magnetic field induced by thermoelectric currents on the electron beam position in the process of electron beam welding of dissimilar materials is presented. The method of monitoring of the misalignment of the scanning electron beam and its mathematical model are proposed. Monitoring of the misalignment of the scanning electron beam is based on the processing of the signal of the collimated X-ray sensor directed to the optical axis of the electron gun by synchronous detection method. The method of compensation of the effect of magnetic fields by passing through the welded seam the currents which compensate thermoelectric currents is considered.

  1. Dynamic stiffness method for inplane free vibration of rotating beams including Coriolis effects

    NASA Astrophysics Data System (ADS)

    Banerjee, J. R.; Kennedy, D.

    2014-12-01

    The paper addresses the in-plane free vibration analysis of rotating beams using an exact dynamic stiffness method. The analysis includes the Coriolis effects in the free vibratory motion as well as the effects of an arbitrary hub radius and an outboard force. The investigation focuses on the formulation of the frequency dependent dynamic stiffness matrix to perform exact modal analysis of rotating beams or beam assemblies. The governing differential equations of motion, derived from Hamilton's principle, are solved using the Frobenius method. Natural boundary conditions resulting from the Hamiltonian formulation enable expressions for nodal forces to be obtained in terms of arbitrary constants. The dynamic stiffness matrix is developed by relating the amplitudes of the nodal forces to those of the corresponding responses, thereby eliminating the arbitrary constants. Then the natural frequencies and mode shapes follow from the application of the Wittrick-Williams algorithm. Numerical results for an individual rotating beam for cantilever boundary condition are given and some results are validated. The influences of Coriolis effects, rotational speed and hub radius on the natural frequencies and mode shapes are illustrated.

  2. Inversion methods for the measurements of MHD-like density fluctuations by Heavy Ion Beam Diagnostic

    NASA Astrophysics Data System (ADS)

    Malaquias, A.; Henriques, R. B.; Nedzelsky, I. S.

    2015-09-01

    We report here on the recent developments in the deconvolution of the path integral effects for the study of MHD pressure-like fluctuations measured by Heavy Ion Beam Diagnostic. In particular, we develop improved methods to account for and remove the path integral effect on the determination of the ionization generation factors, including the double ionization of the primary beam. We test the method using the HIBD simulation code which computes the real beam trajectories and attenuations due to electron impact ionization for any selected synthetic profiles of plasma current, plasma potential, electron temperature and density. Simulations have shown the numerical method to be highly effective in ISTTOK within an overall accuracy of a few percent (< 3%). The method here presented can effectively reduce the path integral effects and may serve as the basis to develop improved retrieving techniques for plasma devices working even in higher density ranges. The method is applied to retrieve the time evolution and spatial structure of m=1 and m=2 modes. The 2D MHD mode-like structure is reconstructed by means of a spatial projection of all 1D measurements obtained during one full rotation of the mode. A shorter version of this contribution is due to be published in PoS at: 1st EPS conference on Plasma Diagnostics

  3. Performances of PID and Different Fuzzy Methods for Controlling a Ball on Beam

    NASA Astrophysics Data System (ADS)

    Minh, Vu Trieu; Mart, Tamre; Moezzi, Reza; Oliver, Mets; Martin, Jurise; Ahti, Polder; Leo, Teder; Mart, Juurma

    2016-05-01

    This paper develops and analyses the performances evaluation of different control strategies applied for a nonlinear motion of a ball on a beam system. Comparison results provide in-depth comprehension on the stable ability of different controllers for this real mechanical application. The three different controllers are a conventional PID method, a Mamdani-type fuzzy rule method and a Sugeno-type fuzzy rule method. In this study, the PID shows the fastest sinuous reference tracking while the Mamdani-type fuzzy method proves the highest stability performance for tracking square wave motions.

  4. Biomedical applications of ion-beam technology

    NASA Technical Reports Server (NTRS)

    Banks, B. A.; Weigand, A. J.; Gibbons, D. F.; Vankampen, C. L.; Babbush, C. A.

    1979-01-01

    Microscopically-rough surface texture of various biocompatible alloys and polymers produced by ion-beam sputtering may result in improvements in response of hard or soft tissue to various surgical implants.

  5. Combined dynamic stiffness matrix and precise time integration method for transient forced vibration response analysis of beams

    NASA Astrophysics Data System (ADS)

    Tang, Bin

    2008-01-01

    A method has been developed for determining the transient response of a beam. The beam is divided into several continuous Timoshenko beam elements. The overall dynamic stiffness matrix is assembled in turn. Using Leung's equation, we derive the overall mass and stiffness matrices which are more suitable for response analysis than the overall dynamic stiffness matrix. The forced vibration of the beam is computed by the precise time integration method. Three illustrative beams are discussed to evaluate the performance of the current method. Solutions calculated by the finite element method and theoretical analysis are also enumerated for comparison. In these examples, we have found that the current method can solve the forced vibration of structures with a higher precision.

  6. Development of magnetron sputtering simulator with GPU parallel computing

    NASA Astrophysics Data System (ADS)

    Sohn, Ilyoup; Kim, Jihun; Bae, Junkyeong; Lee, Jinpil

    2014-12-01

    Sputtering devices are widely used in the semiconductor and display panel manufacturing process. Currently, a number of surface treatment applications using magnetron sputtering techniques are being used to improve the efficiency of the sputtering process, through the installation of magnets outside the vacuum chamber. Within the internal space of the low pressure chamber, plasma generated from the combination of a rarefied gas and an electric field is influenced interactively. Since the quality of the sputtering and deposition rate on the substrate is strongly dependent on the multi-physical phenomena of the plasma regime, numerical simulations using PIC-MCC (Particle In Cell, Monte Carlo Collision) should be employed to develop an efficient sputtering device. In this paper, the development of a magnetron sputtering simulator based on the PIC-MCC method and the associated numerical techniques are discussed. To solve the electric field equations in the 2-D Cartesian domain, a Poisson equation solver based on the FDM (Finite Differencing Method) is developed and coupled with the Monte Carlo Collision method to simulate the motion of gas particles influenced by an electric field. The magnetic field created from the permanent magnet installed outside the vacuum chamber is also numerically calculated using Biot-Savart's Law. All numerical methods employed in the present PIC code are validated by comparison with analytical and well-known commercial engineering software results, with all of the results showing good agreement. Finally, the developed PIC-MCC code is parallelized to be suitable for general purpose computing on graphics processing unit (GPGPU) acceleration, so as to reduce the large computation time which is generally required for particle simulations. The efficiency and accuracy of the GPGPU parallelized magnetron sputtering simulator are examined by comparison with the calculated results and computation times from the original serial code. It is found that

  7. Two self-referencing methods for the measurement of beam spot position

    SciTech Connect

    Nyiri, Balazs J.; Smale, Jason R.; Gerig, Lee H.

    2012-12-15

    Purpose: Two quantitative methods of measuring electron beam spot position with respect to the collimator axis of rotation (CAOR) are described. Methods: Method 1 uses a cylindrical ion chamber (IC) mounted on a jig corotational with the collimator making the relationship among the chamber, jaws, and CAOR fixed and independent of collimator angle. A jaw parallel to the IC axis is set to zero and the IC position adjusted so that the IC signal is approximately 50% of the open field value, providing a large dose gradient in the region of the IC. The cGy/MU value is measured as a function of collimator rotation, e.g., every 30 Degree-Sign . If the beam spot does not lie on the CAOR, the signal from the ion chamber will vary with collimator rotation. Based on a measured spatial sensitivity, the distance of the beam spot from the CAOR can be calculated from the IC signal variation with rotation. The 2nd method is image based. Two stainless steel rods, 3 mm in diameter, are mounted to a jig attached to the Linac collimator. The rods, offset from the CAOR, lay in different planes normal to the CAOR, one at 158 cm SSD and the other at 70 cm SSD. As the collimator rotates the rods move tangent along an envelope circle, the centers of which are on the CAOR in their respective planes. Three images, each at a different collimator rotation, containing the shadows of both rods, are acquired on the Linac EPID. At each angle the shadow of the rods on the EPID defines lines tangent to the projection of the envelope circles. From these the authors determine the projected centers of the two circles at different heights. From the distance of these two points using the two heights and the source to EPID distance, the authors calculate the distance of the beam spot from the CAOR. Measurements with all two techniques were performed on an Elekta Linac. Measurements were performed with the beam spot in nominal clinical position and in a deliberately offset position. Measurements were also

  8. Comparison of methods to determine electron pencil beam spread in tissue-equivalent media

    SciTech Connect

    Sandison, G.A.; Huda, W.; Savoie, D. ); Battista, J.J. )

    1989-11-01

    This study has intercompared the predictions of Fermi--Eyges theory for the rms spatial spread ({sigma}) of an electron pencil beam scattering in muscle-, lung- and bone-equivalent media with those of; two range straggling modifications to the theory, Monte Carlo simulations, and an empirical method based on broad beam penumbra. Systematic differences among the results obtained by these methods for the values of {sigma} have been identified. Monte Carlo simulations are lower than the predictions of Fermi-Eyges theory for {sigma} at all depths whereas the broad beam penumbra method results are in reasonable agreement with Fermi--Eyges theory at depths less than {similar to}0.7 times the range of the incident electrons. All of the methods investigated have an increasing discrepancy from the predictions of Fermi--Eyges theory with depth, especially close to the end of the electron range. The two range-straggling modifications to Fermi--Eyges theory developed for soft tissue do not agree with either measured or Monte Carlo results for {sigma} in homogeneous scattering media of lung and bone.

  9. An inverse finite element method for beam shape sensing: theoretical framework and experimental validation

    NASA Astrophysics Data System (ADS)

    Gherlone, Marco; Cerracchio, Priscilla; Mattone, Massimiliano; Di Sciuva, Marco; Tessler, Alexander

    2014-04-01

    Shape sensing, i.e., reconstruction of the displacement field of a structure from surface-measured strains, has relevant implications for the monitoring, control and actuation of smart structures. The inverse finite element method (iFEM) is a shape-sensing methodology shown to be fast, accurate and robust. This paper aims to demonstrate that the recently presented iFEM for beam and frame structures is reliable when experimentally measured strains are used as input data. The theoretical framework of the methodology is first reviewed. Timoshenko beam theory is adopted, including stretching, bending, transverse shear and torsion deformation modes. The variational statement and its discretization with C0-continuous inverse elements are briefly recalled. The three-dimensional displacement field of the beam structure is reconstructed under the condition that least-squares compatibility is guaranteed between the measured strains and those interpolated within the inverse elements. The experimental setup is then described. A thin-walled cantilevered beam is subjected to different static and dynamic loads. Measured surface strains are used as input data for shape sensing at first with a single inverse element. For the same test cases, convergence is also investigated using an increasing number of inverse elements. The iFEM-recovered deflections and twist rotations are then compared with those measured experimentally. The accuracy, convergence and robustness of the iFEM with respect to unavoidable measurement errors, due to strain sensor locations, measurement systems and geometry imperfections, are demonstrated for both static and dynamic loadings.

  10. Multi-beam pulsed laser deposition: new method of making nanocomposite coatings

    NASA Astrophysics Data System (ADS)

    Darwish, Abdalla M.; Wilson, Simeon; Blackwell, Ashely; Taylor, Keylantra; Sarkisov, Sergey; Patel, Darayas; Mele, Paolo; Koplitz, Brent

    2015-08-01

    Huge number of new photonic devices, including light emitters, chemical sensors, and energy harvesters, etc. can be made of the nanocomposite coatings produced by the new multi-beam pulsed laser deposition (MB-PLD) process. We provide a short review of the conventional single-beam PLD method and explain why it is poorly suitable for making nanocomposite coatings. Then we describe the new MB-PLD process and system, particularly the multiple-beam matrix assisted pulsed laser evaporation (MB-MAPLE) version with laser beam scanning and plume direction control. The latter one is particularly designed to make organic (polymer) - inorganic functionalized nanocomposite coatings. Polymer film serves as a host for inorganic nanoparticles that add a specific functionality to the film. We analyze the properties of such coatings using the examples of poly(methyl methacrylate) (PMMA) films impregnated with the nanoparticles of rare-earth (RE) upconversion phosphors. They demonstrated the preservation of microcrystalline structure and bright upconversion emission in visible region of the phosphor nanoparticles after they were transferred in the polymer matrix during the MB-MAPLE process. The proposed technology has thus proven to serve its purpose: to make functionalized polymer nanocomposite coatings for a various potential applications.

  11. Deflection of a monochromatic THz beam by acousto-optic methods

    SciTech Connect

    Voloshinov, V B; Nikitin, P A; Gerasimov, V V; Choporova, Yu Yu; Knyazev, B A

    2013-12-31

    The possibility of controlled deflection of an electromagnetic THz beam of a free-electron laser by acousto-optic (AO) methods has been demonstrated for the first time. The material of the AO deflector was chosen to be single-crystal germanium, which has a fairly large refractive index (n = 4.0) and a relatively low absorption coefficient for electromagnetic waves. The absorption coefficient α in germanium is 0.75 ± 0.02 cm{sup -1} at a wavelength λ = 140 μm. The diffracted beam intensity is shown to be maximum at an effective AO interaction length l = 1/α. A diffraction efficiency of 0.05% at a travelling acoustic wave power of 1.0 W is experimentally obtained. It is established that a change in the ultrasonic frequency from 25 to 39 MHz leads to variation in the external Bragg angle in the range from 19.5° to 27.5°. At a fixed Bragg angle θ{sub B} = 22.4° the frequency band of diffraction is 4.2 ± 0.1 MHz and the angular range of laser beam scanning reaches 2.5° ± 0.5°. The results obtained indicate that AO interaction can be used for controlled deflection of electromagnetic THz beams. (terahertz radiation)

  12. Ion beam microtexturing and enhanced surface diffusion

    NASA Technical Reports Server (NTRS)

    Robinson, R. S.

    1982-01-01

    Ion beam interactions with solid surfaces are discussed with particular emphasis on microtexturing induced by the deliberate deposition of controllable amounts of an impurity material onto a solid surface while simultaneously sputtering the surface with an ion beam. Experimental study of the optical properties of microtextured surfaces is described. Measurements of both absorptance as a function of wavelength and emissivity are presented. A computer code is described that models the sputtering and ion reflection processes involved in microtexture formation.

  13. Practical assessment of magnetic methods for corrosion detection in an adjacent precast, prestressed concrete box-beam bridge

    NASA Astrophysics Data System (ADS)

    Fernandes, Bertrand; Titus, Michael; Nims, Douglas Karl; Ghorbanpoor, Al; Devabhaktuni, Vijay Kumar

    2013-06-01

    Magnetic methods are progressing in the detection of corrosion in prestressing strands in adjacent precast, prestressed concrete box-beam bridges. This study is the first field trial of magnetic strand defect detection systems on an adjacent box-beam bridge. A bridge in Fayette County, Ohio, which was scheduled for demolition, was inspected. Damage to prestressed box-beams is often due to corrosion of the prestressing strands. The corroded strands show discontinuities and a reduced cross-sectional area. These changes, due to corrosion, are reflected in the magnetic signatures of the prestressing steel. Corrosion in the prestressing steel was detected using two magnetic methods, namely the 'magnetic flux leakage' (MFL) and the 'induced magnetic field'. The purpose of these tests was to demonstrate the ability of the magnetic methods to detect hidden corrosion in box-beams in the field and tackle the logistic problem of inspecting box-beams from the bottom. The inspections were validated by dissecting the bottom of the box-beams after the inspections. The results showed that the MFL method can detect hidden corrosion and strand breaks. Both magnetic field methods were also able to estimate corrosion by detecting the effective cross-sectional area of the strand in sections of the beams. Thus, it was shown that the magnetic methods can be used to predict hidden corrosion in prestressing strands of box-beams.

  14. Dispersion and stability analysis for a finite difference beam propagation method.

    PubMed

    de-Oliva-Rubio, J; Molina-Fernández, I; Godoy-Rubio, R

    2008-06-01

    Applying continuous and discrete transformation techniques, new analytical expressions to calculate dispersion and stability of a Runge- Kutta Finite Difference Beam Propagation Method (RK-FDBPM) are obtained. These expressions give immediate insight about the discretization errors introduced by the numerical method in the plane-wave spectrum domain. From these expressions a novel strategy to adequately set the mesh steps sizes of the RK-FDBPM is presented. Assessment of the method is performed by studying the propagation in several linear and nonlinear photonic devices for different spatial discretizations.

  15. Vibrations of micro-beams actuated by an electric field via Parameter Expansion Method

    NASA Astrophysics Data System (ADS)

    Sedighi, Hamid M.; Shirazi, Kourosh H.

    2013-04-01

    This paper presents a new asymptotic procedure to predict the nonlinear vibrational behavior of micro-beams pre-deformed by an electric field. The nonlinear equation of motion includes both even and odd nonlinearities. A powerful analytical method called Parameter Expansion Method (PEM) is employed to obtain the approximated solution and frequency-amplitude relationship. It is demonstrated that the first two terms in series expansions are sufficient to produce an acceptable solution of mentioned system. The obtained results from numerical methods verify the soundness of the analytical procedure. Finally, the influences of basic parameters on pull-in instability and natural frequency are investigated.

  16. The role of film interfaces in near-ultraviolet absorption and pulsed-laser damage in ion-beam-sputtered coatings based on HfO2/SiO2 thin-film pairs

    SciTech Connect

    Ristau, Detlev; Papernov, S.; Kozlov, A. A.; Oliver, J. B.; Smith, C.; Jensen, L.; Gunster, S.; Madebach, H.

    2015-11-23

    The role of thin-film interfaces in the near-ultraviolet absorption and pulsed-laser–induced damage was studied for ion-beam–sputtered and electron-beam–evaporated coatings comprised from HfO2 and SiO2 thin-film pairs. To separate contributions from the bulk of the film and from interfacial areas, absorption and damage-threshold measurements were performed for a one-wave (355-nm wavelength) thick, HfO2 single-layer film and for a film containing seven narrow HfO2 layers separated by SiO2 layers. The seven-layer film was designed to have a total optical thickness of HfO2 layers, equal to one wave at 355 nm and an E-field peak and average intensity similar to a single-layer HfO2 film. Absorption in both types of films was measured using laser calorimetry and photothermal heterodyne imaging. The results showed a small contribution to total absorption from thin-film interfaces, as compared to HfO2 film material. The relevance of obtained absorption data to coating near-ultraviolet, nanosecond-pulse laser damage was verified by measuring the damage threshold and characterizing damage morphology. The results of this study revealed a higher damage resistance in the seven-layer coating as compared to the single-layer HfO2 film in both sputtered and evaporated coatings. Here, the results are explained through the similarity of interfacial film structure with structure formed during the co-deposition of HfO2 and SiO2 materials.

  17. The role of film interfaces in near-ultraviolet absorption and pulsed-laser damage in ion-beam-sputtered coatings based on HfO2/SiO2 thin-film pairs

    DOE PAGES

    Ristau, Detlev; Papernov, S.; Kozlov, A. A.; Oliver, J. B.; Smith, C.; Jensen, L.; Gunster, S.; Madebach, H.

    2015-11-23

    The role of thin-film interfaces in the near-ultraviolet absorption and pulsed-laser–induced damage was studied for ion-beam–sputtered and electron-beam–evaporated coatings comprised from HfO2 and SiO2 thin-film pairs. To separate contributions from the bulk of the film and from interfacial areas, absorption and damage-threshold measurements were performed for a one-wave (355-nm wavelength) thick, HfO2 single-layer film and for a film containing seven narrow HfO2 layers separated by SiO2 layers. The seven-layer film was designed to have a total optical thickness of HfO2 layers, equal to one wave at 355 nm and an E-field peak and average intensity similar to a single-layer HfO2more » film. Absorption in both types of films was measured using laser calorimetry and photothermal heterodyne imaging. The results showed a small contribution to total absorption from thin-film interfaces, as compared to HfO2 film material. The relevance of obtained absorption data to coating near-ultraviolet, nanosecond-pulse laser damage was verified by measuring the damage threshold and characterizing damage morphology. The results of this study revealed a higher damage resistance in the seven-layer coating as compared to the single-layer HfO2 film in both sputtered and evaporated coatings. Here, the results are explained through the similarity of interfacial film structure with structure formed during the co-deposition of HfO2 and SiO2 materials.« less

  18. High temperature coefficient of resistance achieved by ion beam assisted sputtering with no heat treatment in V{sub y}M{sub 1−y}O{sub x} (M = Nb, Hf)

    SciTech Connect

    Vardi, Naor; Sharoni, Amos

    2015-11-15

    Thermal imaging based on room temperature bolometer sensors is a growing market, constantly searching for improved sensitivity. One important factor is the temperature coefficient of resistance (TCR), i.e., the sensitivity of the active material. Herein, the authors report the improved TCR properties attainable by the “ion beam assisted deposition” method for room temperature deposition. V{sub y}M{sub 1−y}O{sub x} (M = Nb, Hf) thin-film alloys were fabricated on 1 μm thermal SiO{sub 2} atop Si (100) substrates by reactive magnetron cosputtering at room temperature using a low energy ion source, aimed at the film, to insert dissociated oxygen species and increase film density. The authors studied the influence of deposition parameters such as oxygen partial pressure, V to M ratio, and power of the plasma source, on resistance and TCR. The authors show high TCR (up to −3.7% K{sup −1}) at 300 K, and excellent uniformity, but also an increase in resistance. The authors emphasize that samples were prepared at room temperature with no heat treatment, much simpler than common processes that require annealing at high temperatures. So, this is a promising fabrication route for uncooled microbolometers.

  19. Method for beam hardening correction in quantitative computed X-ray tomography

    NASA Technical Reports Server (NTRS)

    Yan, Chye Hwang (Inventor); Whalen, Robert T. (Inventor); Napel, Sandy (Inventor)

    2001-01-01

    Each voxel is assumed to contain exactly two distinct materials, with the volume fraction of each material being iteratively calculated. According to the method, the spectrum of the X-ray beam must be known, and the attenuation spectra of the materials in the object must be known, and be monotonically decreasing with increasing X-ray photon energy. Then, a volume fraction is estimated for the voxel, and the spectrum is iteratively calculated.

  20. Method for measuring the intensity profile of a CT fan-beam filter

    NASA Astrophysics Data System (ADS)

    Whiting, Bruce R.; Dohatcu, Andreea

    2014-03-01

    Research on CT systems often requires knowledge of intensity as a function of angle in the fan-beam, due to the presence of bowtie filters, for studies such as dose reduction simulation, Monte Carlo dose calculations, or statistical reconstruction algorithms. Since manufacturers consider the x-ray bowtie filter design to be proprietary information, several methods have been proposed to measure the beam intensity profile independently: 1) calculate statistical properties of noise in acquired sinograms (requires access to raw data files, which is also vendor proprietary); 2) measure the waveform of a dosimeter located away from the isocenter (requires dosimeter equipment costing > 10K). We present a novel method that is inexpensive (parts costing 100 from any hardware store, using Gafchromic film at $3 per measurement), requires no proprietary information, and can be performed in a few minutes. A fixture is built from perforated steel tubing, which forms an aperture that selectively samples the intensity at a particular fan-beam angle in a rotating gantry. Two exposures (1× and 2×) are made and self-developing radiochromic film (Gafchromic XR- Ashland Inc.) is then scanned on an inexpensive PC document scanner. An analysis method is described that linearizes the measurements for relative exposure. The resultant profile is corrected for geometric effects (1/LΛ2 fall-off, gantry dwell time) and background exposure, providing a noninvasive estimate of the CT fan-beam intensity present in an operational CT system. This method will allow researchers to conveniently measure parameters required for modeling the effects of bowtie filters in clinical scanners.