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Sample records for beam sputtering method

  1. Confined ion beam sputtering device and method

    DOEpatents

    Sharp, Donald J.

    1988-01-01

    A hollow cylindrical target, lined internally with a sputter deposit material and open at both ends, surrounds a substrate on which sputtered deposition is to be obtained. An ion beam received through either one or both ends of the open cylindrical target is forced by a negative bias applied to the target to diverge so that ions impinge at acute angles at different points of the cylindrical target surface. The ion impingement results in a radially inward and downstream directed flux of sputter deposit particles that are received by the substrate. A positive bias applied to the substrate enhances divergence of the approaching ion beams to generate a higher sputtered deposition flux rate. Alternatively, a negative bias applied to the substrate induces the core portion of the ion beams to reach the substrate and provide ion polishing of the sputtered deposit thereon.

  2. Confined ion beam sputtering device and method

    DOEpatents

    Sharp, D.J.

    1986-03-25

    A hollow cylindrical target, lined internally with a sputter deposit material and open at both ends, surrounds a substrate on which sputtered deposition is to be obtained. An ion beam received through either one or both ends of the open cylindrical target is forced by a negative bias applied to the target to diverge so that ions impinge at acute angles at different points of the cylindrical target surface. The ion impingement results in a radially inward and downstream directed flux of sputter deposit particles that are received by the substrate. A positive bias applied to the substrate enhances divergence of the approaching ion beams to generate a higher sputtered deposition flux rate. Alternatively, a negative bias applied to the substrate induces the core portion of the ion beams to reach the substrate and provide ion polishing of the sputtered deposit thereon.

  3. Ion beam sputter target and method of manufacture

    DOEpatents

    Higdon, Clifton; Elmoursi, Alaa A.; Goldsmith, Jason; Cook, Bruce; Blau, Peter; Jun, Qu; Milner, Robert

    2014-09-02

    A target for use in an ion beam sputtering apparatus made of at least two target tiles where at least two of the target tiles are made of different chemical compositions and are mounted on a main tile and geometrically arranged on the main tile to yield a desired chemical composition on a sputtered substrate. In an alternate embodiment, the tiles are of varied thickness according to the desired chemical properties of the sputtered film. In yet another alternate embodiment, the target is comprised of plugs pressed in a green state which are disposed in cavities formed in a main tile also formed in a green state and the assembly can then be compacted and then sintered.

  4. Ion beam sputter etching

    NASA Technical Reports Server (NTRS)

    Banks, Bruce A.; Rutledge, Sharon K.

    1986-01-01

    An ion beam etching process which forms extremely high aspect ratio surface microstructures using thin sputter masks is utilized in the fabrication of integrated circuits. A carbon rich sputter mask together with unmasked portions of a substrate is bombarded with inert gas ions while simultaneous carbon deposition occurs. The arrival of the carbon deposit is adjusted to enable the sputter mask to have a near zero or even slightly positive increase in thickness with time while the unmasked portions have a high net sputter etch rate.

  5. Radioactive ion beams of 111In using ECR plasma sputtering method

    NASA Astrophysics Data System (ADS)

    Naik, Vaishali; Bhattacharjee, Mahuwa; Kumar, D. Lavanya; Karmakar, Prasanta; Das, S. K.; Banerjee, Debashis; Chattopadhyay, Sankha; Barua, Luna; Das, Sujata Saha; Pal, Asit Kumar; Bandyopadhyay, Arup; Chakrabarti, Alok

    2017-06-01

    Radioactive ion beams of 111In (indium-111, half-life 2.8 days) have been produced using the plasma sputtering method in an electron cyclotron resonance (ECR) ion source at the Variable Energy Cyclotron Centre RIB facility. Indium isotopes were first produced by bombarding a natural silver target with a 32 MeV, 40 μ A alpha particle beam from the K-130 cyclotron. After radio-chemical separation, about 25 mCi In-chloride was deposited on an aluminum electrode and inserted in the plasma chamber of the ECR. Indium ions produced by ion induced sputtering in the plasma were extracted from the ion source, isotopically separated, and a pure 111In beam was measured at the focal plane of the separator. The measured 111In beam intensity was 2.67 × 105 particles/s for a beam energy of 5 keV.

  6. Radioactive ion beams of (111)In using ECR plasma sputtering method.

    PubMed

    Naik, Vaishali; Bhattacharjee, Mahuwa; Kumar, D Lavanya; Karmakar, Prasanta; Das, S K; Banerjee, Debashis; Chattopadhyay, Sankha; Barua, Luna; Das, Sujata Saha; Pal, Asit Kumar; Bandyopadhyay, Arup; Chakrabarti, Alok

    2017-06-01

    Radioactive ion beams of (111)In (indium-111, half-life 2.8 days) have been produced using the plasma sputtering method in an electron cyclotron resonance (ECR) ion source at the Variable Energy Cyclotron Centre RIB facility. Indium isotopes were first produced by bombarding a natural silver target with a 32 MeV, 40 μA alpha particle beam from the K-130 cyclotron. After radio-chemical separation, about 25 mCi In-chloride was deposited on an aluminum electrode and inserted in the plasma chamber of the ECR. Indium ions produced by ion induced sputtering in the plasma were extracted from the ion source, isotopically separated, and a pure (111)In beam was measured at the focal plane of the separator. The measured (111)In beam intensity was 2.67 × 10(5) particles/s for a beam energy of 5 keV.

  7. Ion beam sputtering of fluoropolymers

    NASA Technical Reports Server (NTRS)

    Sovey, J. S.

    1978-01-01

    Etching and deposition of fluoropolymers are of considerable industrial interest for applications dealing with adhesion, chemical inertness, hydrophobicity, and dielectric properties. This paper describes ion beam sputter processing rates as well as pertinent characteristics of etched targets and films. An argon ion beam source was used to sputter etch and deposit the fluoropolymers PTFE, FEP, and CTFE. Ion beam energy, current density, and target temperature were varied to examine effects on etch and deposition rates. The ion etched fluoropolymers yield cone or spire-like surface structures which vary depending upon the type of polymer, ion beam power density, etch time, and target temperature. Also presented are sputter target and film characteristics which were documented by spectral transmittance measurements, X-ray diffraction, ESCA, and SEM photomicrographs.

  8. Method of making an ion beam sputter-etched ventricular catheter for hydrocephalus shunt

    NASA Technical Reports Server (NTRS)

    Banks, B. A. (Inventor)

    1984-01-01

    The centricular catheter comprises a multiplicity of inlet microtubules. Each microtubule has both a large opening at its inlet end and a multiplicity of microscopic openings along its lateral surfaces. The microtubules are perforated by an ion beam sputter etch technique. The holes are etched in each microtubule by directing an ion beam through an electro formed mesh mask producing perforations having diameters ranging from about 14 microns to about 150 microns. This structure assures a reliable means for shunting cerebrospinal fluid from the cerebral ventricles to selected areas of the body.

  9. Properties of Electron-Beam Irradiated CuInSe2 Layers by Multi-Step Sputtering Method.

    PubMed

    Kim, Chae-Woong; Kim, Jin Hyeok; Jeong, Chaehwan

    2015-10-01

    Typically, CuInSe2 (CIS) based thin films for photovoltaic devices are deposited by co-evaporation or by deposition of the metals, followed by treatment in a selenium environment. This article describes CIS films that are instead deposited by DC and RF magnetron sputtering from binary Cu2Se and In2Se3 targets without the supply of selenium. As a novel method, electron beam annealing was used for crystallization of Cu2Se/In2Se3 stacked precursors. The surface, cross-sectional morphology, and compositional ratio of CIS films were investigated to confirm the possibility in crystallization without any addition of selenium. Our work demonstrates that the e-beam annealing method can be a good candidate for the rapid crystallization of Cu-In-Se sputtered precursors.

  10. Development of long-lived thick carbon stripper foils for high energy heavy ion accelerators by a heavy ion beam sputtering method

    SciTech Connect

    Muto, Hideshi; Ohshiro, Yukimitsu; Kawasaki, Katsunori; Oyaizu, Michihiro; Hattori, Toshiyuki

    2013-04-19

    In the past decade, we have developed extremely long-lived carbon stripper foils of 1-50 {mu}g/cm{sup 2} thickness prepared by a heavy ion beam sputtering method. These foils were mainly used for low energy heavy ion beams. Recently, high energy negative Hydrogen and heavy ion accelerators have started to use carbon stripper foils of over 100 {mu}g/cm{sup 2} in thickness. However, the heavy ion beam sputtering method was unsuccessful in production of foils thicker than about 50 {mu}g/cm{sup 2} because of the collapse of carbon particle build-up from substrates during the sputtering process. The reproduction probability of the foils was less than 25%, and most of them had surface defects. However, these defects were successfully eliminated by introducing higher beam energies of sputtering ions and a substrate heater during the sputtering process. In this report we describe a highly reproducible method for making thick carbon stripper foils by a heavy ion beam sputtering with a Krypton ion beam.

  11. Optimization of coating uniformity in an ion beam sputtering system using a modified planetary rotation method.

    PubMed

    Gross, Mark; Dligatch, Svetlana; Chtanov, Anatoli

    2011-03-20

    A modified planetary rotation system has been developed to obtain high uniformity optical coatings on large substrates in an ion beam sputter coater. The system allows the normally fixed sun gear to rotate, thus allowing an extra degree of freedom and permitting more complex motions to be used. By moving the substrate platen between two fixed positions around the sun axis, averaging of the distributions at these two positions takes place and improved uniformity can be achieved. A peak-to-valley radial uniformity of ∼0.15% (∼0.07% rms) on a single layer film on a 400 mm diameter substrate has been achieved without the aid of masking.

  12. Method and means of directing an ion beam onto an insulating surface for ion implantation or sputtering

    DOEpatents

    Gruen, Dieter M.; Krauss, Alan R.; Siskind, Barry

    1981-01-01

    A beam of ions is directed under control onto an insulating surface by supplying simultaneously a stream of electrons directed at the same surface in a quantity sufficient to neutralize the overall electric charge of the ion beam and result in a net zero current flow to the insulating surface. The ion beam is adapted particularly both to the implantation of ions in a uniform areal disposition over the insulating surface and to the sputtering of atoms or molecules of the insulator onto a substrate.

  13. Titanium dioxide fine structures by RF magnetron sputter method deposited on an electron-beam resist mask

    NASA Astrophysics Data System (ADS)

    Hashiba, Hideomi; Miyazaki, Yuta; Matsushita, Sachiko

    2013-09-01

    Titanium dioxide (TiO2) has been draw attention for wide range of applications from photonic crystals for visible light range by its catalytic characteristics to tera-hertz range by its high refractive index. We present an experimental study of fabrication of fine structures of TiO2 with a ZEP electron beam resist mask followed by Ti sputter deposition techniques. A TiO2 thin layer of 150 nm thick was grown on an FTO glass substrate with a fine patterned ZEP resist mask by a conventional RF magnetron sputter method with Ti target. The deposition was carried out with argon-oxygen gases at a pressure of 5.0 x 10 -1 Pa in a chamber. During the deposition, ratio of Ar-O2 gas was kept to the ratio of 2:1 and the deposition ratio was around 0.5 Å/s to ensure enough oxygen to form TiO2 and low temperature to avoid deformation of fine pattern of the ZPU resist mask. Deposited TiO2 layers are white-transparent, amorphous, and those roughnesses are around 7 nm. Fabricated TiO2 PCs have wider TiO2 slabs of 112 nm width leaving periodic 410 x 410 nm2 air gaps. We also studied transformation of TiO2 layers and TiO2 fine structures by baking at 500 °C. XRD measurement for TiO2 shows that the amorphous TiO2 transforms to rutile and anatase forms by the baking while keeping the same profile of the fine structures. Our fabrication method can be one of a promising technique to optic devices on researches and industrial area.

  14. Ion beam sputter etching and deposition of fluoropolymers

    NASA Technical Reports Server (NTRS)

    Banks, B. A.; Sovey, J. S.; Miller, T. B.; Crandall, K. S.

    1978-01-01

    Fluoropolymer etching and deposition techniques including thermal evaporation, RF sputtering, plasma polymerization, and ion beam sputtering are reviewed. Etching and deposition mechanism and material characteristics are discussed. Ion beam sputter etch rates for polytetrafluoroethylene (PTFE) were determined as a function of ion energy, current density and ion beam power density. Peel strengths were measured for epoxy bonds to various ion beam sputtered fluoropolymers. Coefficients of static and dynamic friction were measured for fluoropolymers deposited from ion bombarded PTFE.

  15. Ion beam sputter etching and deposition of fluoropolymers

    NASA Technical Reports Server (NTRS)

    Banks, B. A.; Sovey, J. S.; Miller, T. B.; Crandall, K. S.

    1978-01-01

    Fluoropolymer etching and deposition techniques including thermal evaporation, RF sputtering, plasma polymerization, and ion beam sputtering are reviewed. Etching and deposition mechanisms and material characteristics are discussed. Ion beam sputter etch rates for polytetrafluoroethylene (PTFE) were determined as a function of ion energy, current density and ion beam power density. Peel strengths were measured for epoxy bonds to various ion beam sputtered fluoropolymers. Coefficients of static and dynamic friction were measured for fluoropolymers deposited from ion bombarded PTFE.

  16. Effect of annealing on magnetic properties of Nd-Fe-B thin films prepared by ECR ion beam sputtering method

    NASA Astrophysics Data System (ADS)

    Tokumaru, R.; Tamano, S.; Goto, S.; Madeswaran, S.; Tokiwa, K.; Watanabe, T.

    2009-11-01

    Nd-Fe-B thin films were prepared by electron cyclotron resonance (ECR) ion beam sputtering and subsequent annealing. The influence of annealing on the magnetic properties and X-ray diffraction patterns of the product films was investigated. Amorphous films deposited at room temperature were annealed at temperatures between 600 and 800 °C. The c-axis oriented crystallization of the Nd2Fe14B phase did not appear by annealing of the buffer layer and magnetic Nd-Fe-B layer deposited at room temperature, and the hysteresis loops of the films indicated magnetic isotropy.

  17. Monte Carlo simulations of nanoscale focused neon ion beam sputtering.

    PubMed

    Timilsina, Rajendra; Rack, Philip D

    2013-12-13

    A Monte Carlo simulation is developed to model the physical sputtering of aluminum and tungsten emulating nanoscale focused helium and neon ion beam etching from the gas field ion microscope. Neon beams with different beam energies (0.5-30 keV) and a constant beam diameter (Gaussian with full-width-at-half-maximum of 1 nm) were simulated to elucidate the nanostructure evolution during the physical sputtering of nanoscale high aspect ratio features. The aspect ratio and sputter yield vary with the ion species and beam energy for a constant beam diameter and are related to the distribution of the nuclear energy loss. Neon ions have a larger sputter yield than the helium ions due to their larger mass and consequently larger nuclear energy loss relative to helium. Quantitative information such as the sputtering yields, the energy-dependent aspect ratios and resolution-limiting effects are discussed.

  18. Ion Beam Sputtered Coatings of Bioglass

    NASA Technical Reports Server (NTRS)

    Hench, Larry L.; Wilson, J.; Ruzakowski, Patricia Henrietta Anne

    1982-01-01

    The ion beam sputtering technique available at the NASA-Lewis was used to apply coatings of bioglass to ceramic, metallic, and polymeric substrates. Experiments in vivo and in vitro described investigate these coatings. Some degree of substrate masking was obtained in all samples although stability and reactivity equivalent to bulk bioglass was not observed in all coated samples. Some degree of stability was seen in all coated samples that were reacted in vitro. Both metallic and ceramic substrates coated in this manner failed to show significantly improved coatings over those obtained with existing techniques. Implantation of the coated ceramic substrate samples in bone gave no definite bonding as seen with bulk glass; however, partial and patchy bonding was seen. Polymeric substrates in these studies showed promise of success. The coatings applied were sufficient to mask the underlying reactive test surface and tissue adhesion of collagen to bioglass was seen. Hydrophilic, hydrophobic, charged, and uncharged polymeric surfaces were successfully coated.

  19. Ion beam sputter deposited zinc telluride films

    NASA Technical Reports Server (NTRS)

    Gulino, D. A.

    1985-01-01

    Zinc telluride is of interest as a potential electronic device material, particularly as one component in an amorphous superlattice, which is a new class of interesting and potentially useful materials. Some structural and electronic properties of ZnTe films deposited by argon ion beam sputter depoairion are described. Films (up to 3000 angstroms thick) were deposited from a ZnTe target. A beam energy of 1000 eV and a current density of 4 mA/sq. cm. resulted in deposition rates of approximately 70 angstroms/min. The optical band gap was found to be approximately 1.1 eV, indicating an amorphous structure, as compared to a literature value of 2.26 eV for crystalline material. Intrinsic stress measurements showed a thickness dependence, varying from tensile for thicknesses below 850 angstroms to compressive for larger thicknesses. Room temperature conductivity measurement also showed a thickness dependence, with values ranging from 1.86 x to to the -6/ohm. cm. for 300 angstrom film to 2.56 x 10 to the -1/ohm. cm. for a 2600 angstrom film. Measurement of the temperature dependence of the conductivity for these films showed complicated behavior which was thickness dependent. Thinner films showed at least two distinct temperature dependent conductivity mechanisms, as described by a Mott-type model. Thicker films showed only one principal conductivity mechanism, similar to what might be expected for a material with more crystalline character.

  20. Ion beam sputter deposited zinc telluride films

    NASA Technical Reports Server (NTRS)

    Gulino, D. A.

    1986-01-01

    Zinc telluride is of interest as a potential electronic device material, particularly as one component in an amorphous superlattice, which is a new class of interesting and potentially useful materials. Some structural and electronic properties of ZnTe films deposited by argon ion beam sputter deposition are described. Films (up to 3000 angstroms thick) were deposited from a ZnTe target. A beam energy of 1000 eV and a current density of 4 mA/sq cm resulted in deposition rates of approximately 70 angstroms/min. The optical band gap was found to be approximately 1.1 eV, indicating an amorphous structure, as compared to a literature value of 2.26 eV for crystalline material. Intrinsic stress measurements showed a thickness dependence, varying from tensile for thicknesses below 850 angstroms to compressive for larger thicknesses. Room temperature conductivity measurement also showed a thickness dependence, with values ranging from 1.86 x 10 to the -6th/ohm cm for 300 angstrom film to 2.56 x 10 to the -1/ohm cm for a 2600 angstrom film. Measurement of the temperature dependence of the conductivity for these films showed complicated behavior which was thickness dependent. Thinner films showed at least two distinct temperature dependent conductivity mechanisms, as described by a Mott-type model. Thicker films showed only one principal conductivity mechanism, similar to what might be expected for a material with more crystalline character.

  1. Embedding-Free Method for Preparation of Cross-Sections of Organic Materials for Micro Chemical Analysis Using Gas Cluster Ion Beam Sputtering.

    PubMed

    Mihara, Ichiro; Havelund, Rasmus; Gilmore, Ian S

    2017-05-02

    We present a novel in situ mask method for the preparation of cross-sections of organic materials such as polymer multilayer films suitable for chemical imaging of buried interfaces. We demonstrate this method on a model buried interface system consisting of a piece of Scotch tape adhered to a PET substrate and a protective film used in consumer packaging. A high dose of gallium from a focused ion beam (FIB) was used to produce a damaged overlayer on the surface of the organic sample. The damaged layer has a significantly slower sputter rate compared to the native undamaged organic material. Therefore, during gas cluster ion beam (GCIB) depth profiling experiments the damaged layer functions as a mask, protecting the sample beneath and producing a cross-section at the edge of the mask. The FIB itself cannot be used directly to prepare the cross-section since the organic materials are easily damaged. A four step workflow is described including a final cleaning procedure to remove redeposited material from the cross-section. The workflow is completed in a few hours for samples up to 100 μm thickness. The method does not require sample embedding and is suited to automated analysis, which can be important benefits for industrial analysis where a variety of samples are analyzed routinely.

  2. Electron-beam activated thermal sputtering of thermoelectric materials.

    SciTech Connect

    Wu, J.; He, J.; Han, M-K.; Sootsman, J. R.; Girard, S.; Arachchige, I. U.; Kanatzidis, M. G.; Dravid, V. P.

    2011-08-01

    Thermoelectricity and Seebeck effect have long been observed and validated in bulk materials. With the development of advanced tools of materials characterization, here we report the first observation of such an effect in the nanometer scale: in situ directional sputtering of several thermoelectric materials inside electron microscopes. The temperature gradient introduced by the electron beam creates a voltage-drop across the samples, which enhances spontaneous sputtering of specimen ions. The sputtering occurs along a preferential direction determined by the direction of the temperature gradient. A large number of nanoparticles form and accumulate away from the beam location as a result. The sputtering and re-crystallization are found to occur at temperatures far below the melting points of bulk materials. The sputtering occurs even when a liquid nitrogen cooling holder is used to keep the overall temperature at -170 C. This unique phenomenon that occurred in the nanometer scale may provide useful clues to understanding the mechanism of thermoelectric effect.

  3. Electron-beam activated thermal sputtering of thermoelectric materials

    SciTech Connect

    Wu Jinsong; Dravid, Vinayak P.; He Jiaqing; Han, Mi-Kyung; Sootsman, Joseph R.; Girard, Steven; Arachchige, Indika U.; Kanatzidis, Mercouri G.

    2011-08-15

    Thermoelectricity and Seebeck effect have long been observed and validated in bulk materials. With the development of advanced tools of materials characterization, here we report the first observation of such an effect in the nanometer scale: in situ directional sputtering of several thermoelectric materials inside electron microscopes. The temperature gradient introduced by the electron beam creates a voltage-drop across the samples, which enhances spontaneous sputtering of specimen ions. The sputtering occurs along a preferential direction determined by the direction of the temperature gradient. A large number of nanoparticles form and accumulate away from the beam location as a result. The sputtering and re-crystallization are found to occur at temperatures far below the melting points of bulk materials. The sputtering occurs even when a liquid nitrogen cooling holder is used to keep the overall temperature at -170 deg. C. This unique phenomenon that occurred in the nanometer scale may provide useful clues to understanding the mechanism of thermoelectric effect.

  4. Deposition of reactively ion beam sputtered silicon nitride coatings

    NASA Technical Reports Server (NTRS)

    Grill, A.

    1982-01-01

    An ion beam source was used to deposit silicon nitride films by reactively sputtering a silicon target with beams of Ar + N2 mixtures. The nitrogen fraction in the sputtering gas was 0.05 to 0.80 at a total pressure of 6 to 2 millionth torr. The ion beam current was 50 mA at 500 V. The composition of the deposited films was investigated by auger electron spectroscopy and the rate of deposition was determined by interferometry. A relatively low rate of deposition of about 2 nm. one-tenth min. was found. AES spectra of films obtained with nitrogen fractions higher than 0.50 were consistent with a silicon to nitrogen ratio corresponding to Si3N4. However the AES spectra also indicated that the sputtered silicon nitride films were contaminated with oxygen and carbon and contained significant amounts of iron, nickel, and chromium, most probably sputtered from the holder of the substrate and target.

  5. Stress control in optical thin films by sputtering and electron beam evaporation.

    PubMed

    Tajima, Naoya; Murotani, Hiroshi; Matsumoto, Shigeharu; Honda, Hiromitsu

    2017-02-01

    It is necessary to control the internal stress of optical thin films in order to address problems such as peeling and cracking. Internal stress differs among films prepared by different deposition methods. We investigated the internal stress of films prepared by sputtering, electron beam (EB) evaporation, and a combination deposition method that we developed. The internal stress was successfully controlled, showing a value between that of EB evaporation and sputtering.

  6. Electrical spin injection into InGaAs/GaAs quantum wells: A comparison between MgO tunnel barriers grown by sputtering and molecular beam epitaxy methods

    SciTech Connect

    Barate, P.; Zhang, T. T.; Vidal, M.; Renucci, P.; Marie, X.; Amand, T.; Liang, S.; Devaux, X.; Hehn, M.; Mangin, S.; Lu, Y.; Frougier, J.; Jaffrès, H.; George, J. M.; Zheng, Y.; Tao, B.; Han, X. F.

    2014-07-07

    An efficient electrical spin injection into an InGaAs/GaAs quantum well light emitting diode is demonstrated thanks to a CoFeB/MgO spin injector. The textured MgO tunnel barrier is fabricated by two different techniques: sputtering and molecular beam epitaxy. The maximal spin injection efficiency is comparable for both methods. Additionally, the effect of annealing is also investigated for the two types of samples. Both samples show the same trend: an increase of the electroluminescence circular polarization (P{sub c}) with the increase of annealing temperature, followed by a saturation of P{sub c} beyond 350 °C annealing. Since the increase of P{sub c} starts well below the crystallization temperature of the full CoFeB bulk layer, this trend could be mainly due to an improvement of chemical structure at the top CoFeB/MgO interface. This study reveals that the control of CoFeB/MgO interface is essential for an optimal spin injection into semiconductor.

  7. Modeling of iron oxide deposition by reactive ion beam sputtering

    SciTech Connect

    Puech, Laurent; Dubarry, Christophe; Ravel, Guillaume; Vito, Eric de

    2010-03-15

    An analytic model of deposition is applied on reactive ion beam sputtering to optimize the properties of iron oxide thin films. This model will be able to predict deposition rate and phase contents. Among its hypotheses, we assume oxygen adsorption at the surface of the target to explain variations of deposition rate for oxygen flow. This hypothesis is validated by chemical analyses on iron targets. An ellipsoidal distribution of probability is introduced to model sputtered matter distribution from iron target and to calculate sputtering yield. Comparison between experimental and calculated deposition rates validates previously assumed hypotheses.

  8. Proof-of-principle of a novel method for sputter-deposition of high Tc supeconducting films via a computer-controlled mass analyzed ion beam

    NASA Astrophysics Data System (ADS)

    Auciello, Orlando; Krauss, Alan R.

    1988-02-01

    A novel concept is demonstrated for ion beam sputter-induced deposition of high Tc superconductor films. The concept involves the use of a well-focused ion beam which can be sequentially directed via a set of x-y electrostatic deflection plates onto three or more different elemental or compound targets which are constituents of the desired composite film. The deflection plates are driven by two ±1000 volt bipolar programmable power supplies which are controlled by a DEC LSI 11/73 computer. A custom program drives two D/A converters to provide the ±10 volt analog signal which is used to drive the power supplies in such a way that the ion beam is positioned on selected spots on the different targets. By programming the dwell time for each targe according to the known sputtering yield and desired layer thickness for each material, it is possible to deposit composite films from a well-controlled sub-monolayer up to thicknesses determined only by the available deposition time. Initial results on the deposition of Y-Ba-Cu-O films are presented to demonstrate the concept, which in principle can also be applied to the deposition of high Tc superconducting films by electron- and laser-induced evaporation of elemental or oxide targets.

  9. Electrostatic particle trap for ion beam sputter deposition

    DOEpatents

    Vernon, Stephen P.; Burkhart, Scott C.

    2002-01-01

    A method and apparatus for the interception and trapping of or reflection of charged particulate matter generated in ion beam sputter deposition. The apparatus involves an electrostatic particle trap which generates electrostatic fields in the vicinity of the substrate on which target material is being deposited. The electrostatic particle trap consists of an array of electrode surfaces, each maintained at an electrostatic potential, and with their surfaces parallel or perpendicular to the surface of the substrate. The method involves interception and trapping of or reflection of charged particles achieved by generating electrostatic fields in the vicinity of the substrate, and configuring the fields to force the charged particulate material away from the substrate. The electrostatic charged particle trap enables prevention of charged particles from being deposited on the substrate thereby enabling the deposition of extremely low defect density films, such as required for reflective masks of an extreme ultraviolet lithography (EUVL) system.

  10. Application of optical broadband monitoring to quasi-rugate filters by ion-beam sputtering.

    PubMed

    Lappschies, Marc; Görtz, Björn; Ristau, Detlev

    2006-03-01

    Methods for the manufacture of rugate filters by the ion-beam-sputtering process are presented. The first approach gives an example of a digitized version of a continuous-layer notch filter. This method allows the comparison of the basic theory of interference coatings containing thin layers with practical results. For the other methods, a movable zone target is employed to fabricate graded and gradual rugate filters. The examples demonstrate the potential of broadband optical monitoring in conjunction with the ion-beam-sputtering process. First-characterization results indicate that these types of filter may exhibit higher laser-induced damage-threshold values than those of classical filters.

  11. Nanopatterning of swinging substrates by ion-beam sputtering

    NASA Astrophysics Data System (ADS)

    Yoon, Sun Mi; Kim, J.-S.

    2016-05-01

    Graphite substrates are azimuthally swung during ion-beam sputtering (IBS) at a polar angle θ = 78° from the surface normal. The swinging of the substrate not only causes quasi-two-dimensional mass transport but also makes various sputter effects from the different incident angles to work together. Through variation of the swing angle, both the transport and sputtering effects synergistically produce a series of salient patterns, such as asymmetric wall-like structures, which can grow to several tens of nanometers and exhibit a re-entrant orientational change with the increased swing angle. Thus, the present work demonstrates that dynamic variables such as the swing angle, which have been little utilized, offer an additional parameter space that can be exploited to diversify the sputtered patterns, thereby expanding the applicability of an IBS as well as the comprehension of the IBS nano patterning mechanism.

  12. Alloying of metal nanoparticles by ion-beam induced sputtering

    NASA Astrophysics Data System (ADS)

    Magudapathy, P.; Srivastava, S. K.; Gangopadhyay, P.; Amirthapandian, S.; Saravanan, K.; Das, A.; Panigrahi, B. K.

    2017-01-01

    Ion-beam sputtering technique has been utilized for controlled synthesis of metal alloy nanoparticles of compositions that can be tuned. Analysis of various experimental results reveals the formation of Ag-Cu alloy nanoparticles on a silica substrate. Surface-plasmon optical resonance positions and observed shifts of Ag Bragg angles in X-ray diffraction pattern particularly confirm formation of alloy nanoparticles on glass samples. Sputtering induced nano-alloying mechanism has been discussed and compared with thermal mixing of Ag and Cu thin films on glass substrates. Compositions and sizes of alloy nanoparticles formed during ion-beam induced sputtering are found to exceed far from the values of thermal mixing.

  13. Neutral beam dose and sputtering characteristics in an ion implantation system

    NASA Technical Reports Server (NTRS)

    Roberts, A. S., Jr.; Ash, R. L.; Berger, M. H.

    1973-01-01

    A technique and instrument design for calorimetric detection of the neutral atom content of a 60 keV argon ion beam. A beam sampling method is used to measure local heat flux to a small platinum wire at steady state; integration of power density profiles leads to a determination of equivalent neutral beam current. The fast neutral production occurs as a result of charge transfer processes in the region of the beam system between analyzing magnet and beam stop where the pressure remains less than .00001 torr. A description of the neutral beam detector is given in section along with a presentation of results. An elementary analysis of sputter material transport from target to substrate was performed; the analysis relates to semiconductor sputtering.

  14. Development of hydrophobicity of mica surfaces by ion beam sputtering

    NASA Astrophysics Data System (ADS)

    Metya, Amaresh; Ghose, Debabrata; Ray, Nihar Ranjan

    2014-02-01

    The hydrophilic mica surface can be made hydrophobic by low energy Ar+ ion sputtering. The ion sputtering leads to both topographical and physicochemical changes of the surface which are thought to be responsible for the water repelling behavior. The sessile drop method is used to evaluate the wetting properties of the sputtered mica surfaces. It has been shown that the sputter-pattern at the nano-length scale has little influence on the development of hydrophobicity. On the other hand, the wettability appears to be strongly connected with the chemistry of the bombarded surface. We have also studied the temporal evolution of contact angle as the water evaporates due to difference in vapor pressures between the droplet surface and the surroundings. The analysis offers a simple method to estimate the diffusion coefficient of water vapor.

  15. Contamination control in ion beam sputter-deposited films

    NASA Astrophysics Data System (ADS)

    Pearson, David I. C.; Pochon, Sebastien; Cooke, Mike

    2013-09-01

    The conventional wisdom to guarantee high purity thin films in IBSD has been to use a large vacuum chamber usually in excess of 1 m3. The chamber size was important to minimise the effect of reflected high energy particles from the target surface sputtering chamber materials onto the substrate and to allow the use of large targets to avoid beam overspill onto chamber furniture. An improved understanding of beam trajectories and re-sputtered material paths has allowed the deposition of thin films with very low metallic impurity content in a chamber volume below 0.5 m3. Thus, by optimizing the sputter ion source, target and substrate configuration, and by arranging suitable shielding made of an appropriate material in the process chamber, the levels of contaminants in the deposited films have been reduced to a minimum. With this optimum hardware arrangement, the ion beam process parameters were then optimized with respect to the ppm levels of contaminants measured in the films by SIMS analysis. Using the deposition of SiO2 as a standard material for DSIMS composition analysis and impurity level determination, it has been shown that our IBS deposition tool is capable of depositing films with contamination levels of <50ppm for the total of all metal impurities in the deposited films.

  16. Sputtering

    NASA Technical Reports Server (NTRS)

    Spalvins, T.

    1976-01-01

    The potential of using the sputtering process as a deposition technique is reviewed; however, the manufacturing and sputter etching aspects are also discussed. The basic mechanism for dc and rf sputtering is described. Sputter deposition is presented in terms of the unique advantageous features it offers such as versatility, momentum transfer, stoichiometry, sputter etching, target geometry (coating and complex surfaces), precise controls, flexibility, ecology, and sputtering rates. Sputtered film characteristics, such as strong adherence and coherence and film morphology, are briefly evaluated in terms of varying the sputtering parameters. Also discussed are some of the specific industrial areas which are turning to sputter deposition techniques.

  17. Thickness-dependent crystallization on thermal anneal for titania/silica nm-layer composites deposited by ion beam sputter method.

    PubMed

    Pan, Huang-Wei; Wang, Shun-Jin; Kuo, Ling-Chi; Chao, Shiuh; Principe, Maria; Pinto, Innocenzo M; DeSalvo, Riccardo

    2014-12-01

    Crystallization following thermal annealing of thin film stacks consisting of alternating nm-thick titania/silica layers was investigated. Several prototypes were designed, featuring a different number of titania/silica layer pairs, and different thicknesses (in the range from 4 to 40 nm, for the titania layers), but the same nominal refractive index (2.09) and optical thickness (a quarter of wavelength at 1064 nm). The prototypes were deposited by ion beam sputtering on silicon substrates. All prototypes were found to be amorphous as-deposited. Thermal annealing in air at progressive temperatures was subsequently performed. It was found that the titania layers eventually crystallized forming the anatase phase, while the silica layers remained always amorphous. However, progressively thinner layers exhibited progressively higher threshold temperatures for crystallization onset. Accordingly it can be expected that composites with thinner layers will be able to sustain higher annealing temperatures without crystallizing, and likely yielding better optical and mechanical properties for advanced coatings application. These results open the way to the use of materials like titania and hafnia, that crystallize easily under thermal anneal, but ARE otherwise promising candidate materials for HR coatings necessary for cryogenic 3rd generation laser interferometric gravitational wave detectors.

  18. Ion-beam and dual-ion-beam sputter deposition of tantalum oxide films

    NASA Astrophysics Data System (ADS)

    Cevro, Mirza; Carter, George

    1995-02-01

    Ion-beam sputter deposition (IBS) and dual-ion-beam sputter deposition (DIBS) of tantalum oxide films was investigated at room temperature and compared with similar films prepared by e-gun deposition. The optical properties, i.e., refractive index and extinction coefficient, of IBS films were determined in the 250- to 1100-nm range by transmission spectrophotometry and at (lambda) equals 632.8 nm by ellipsometry. They were found to be mainly sensitive to the partial pressure of oxygen used as a reactive gas in the deposition process. The maximum value of the refractive index of IBS deposited tantalum oxide films was n equals 2.15 at (lambda) equals 550 nm and the extinction coefficient of order k equals 2 X 10-4. Films deposited by e-gun deposition had refractive index n 2.06 at (lambda) equals 550 nm. Films deposited using DIBS, i.e., deposition assisted by low energy Ar and O2 ions (Ea equals 0 to 300 eV) and low current density (Ji equals 0 to 40 (mu) A/cm2), showed no improvement in the optical properties of the films. Preferential sputtering occurred at Ea(Ar) equals 300 eV and Ji equals 20 (mu) A/cm2 and slightly oxygen deficient films were formed. Different bonding states in the tantalum-oxide films were determined by x-ray spectroscopy, whereas composition of the film and contaminants were determined by Rutherford backscattering spectroscopy (RBS). Tantalum oxide films formed by IBS contained relatively high Ar content (approximately equals 2.5%) originating from the reflected argon neutrals from the sputtering target whereas assisted deposition slightly increased the Ar content. Stress in the IBS-deposited films was measured by the bending technique. IBS-deposited films showed compressive stress with a typical value of s equals 3.2 X 109 dyn/cm2. Films deposited by concurrent ion bombardment showed an increase in the stress as a function of applied current density. The maximum was s approximately equals 5.6 X 109 dyn/cm2 for Ea equals 300 eV and Ji equals

  19. Ion beam and dual ion beam sputter deposition of tantalum oxide films

    NASA Astrophysics Data System (ADS)

    Cevro, Mirza; Carter, George

    1994-11-01

    Ion beam sputter deposition (IBS) and dual ion beam sputter deposition (DIBS) of tantalum oxide films was investigated at room temperature and compared with similar films prepared by e-gun deposition. Optical properties ie refractive index and extinction coefficient of IBS films were determined in the 250 - 1100 nm range by transmission spectrophotometry and at (lambda) equals 632.8 nm by ellipsometry. They were found to be mainly sensitive to the partial pressure of oxygen used as a reactive gas in the deposition process. The maximum value of the refractive index of IBS deposited tantalum oxide films was n equals 2.15 at (lambda) equals 550 nm and the extinction coefficient of order k equals 2 X 10-4. Films deposited by e-gun deposition had refractive index n equals 2.06 at (lambda) equals 550 nm. Films deposited using DIBS ie deposition assisted by low energy Ar and O2 ions (Ea equals 0 - 300 eV) and low current density (Ji equals 0 - 40 (mu) A/cm2) showed no improvement in the optical properties of the films. Preferential sputtering occurred at Ea(Ar) equals 300 eV and Ji equals 20 (mu) A/cm2 and slightly oxygen deficient films were formed. Different bonding states in the tantalum-oxide films were determined by x-ray spectroscopy while composition of the film and contaminants were determined by Rutherford scattering spectroscopy. Tantalum oxide films formed by IBS contained relatively high Ar content (approximately equals 2.5%) originating from the reflected argon neutrals from the sputtering target while assisted deposition slightly increased the Ar content. Stress in the IBS deposited films was measured by the bending technique. IBS deposited films showed compressive stress with a typical value of s equals 3.2 X 109 dyn/cm2. Films deposited by concurrent ion bombardment showed an increase in the stress as a function of applied current density. The maximum was s approximately equals 5.6 X 109 dyn/cm2 for Ea equals 300 eV and Ji equals 35 (mu) A/cm2. All

  20. Simulation of ion beam sputtering with SDTrimSP, TRIDYN and SRIM

    NASA Astrophysics Data System (ADS)

    Hofsäss, H.; Zhang, K.; Mutzke, A.

    2014-08-01

    A quantitative simulation of ion beam sputtering and related collision cascade effects is essential for applications of ion beam irradiation in thin film deposition, surface treatment and sculpting with focused ion beams, ion beam smoothing of surfaces and ion-induced nanopattern formation. The understanding of fundamental ion-solid interaction processes relevant for nanostructure formation, ion-induced mass redistribution, sputter yield amplification, ion beam mixing and dynamic compositional changes requires reliable simulations of ion-solid interaction processes in particular at low ion energies. In this contribution we discuss the possibilities, the key benefits and the limitations of three popular binary collision Monte Carlo simulation programs (SDTrimSP, TRIDYN and SRIM). The focus will be set to the calculation of angle dependent sputter yields, angular distribution of sputtered particles, sputter yields for compound materials, sputter yield amplification effects, as well as the extraction of parameters relevant for modeling ion-induced surface pattern formation from vacancy and recoil atom distributions.

  1. Pattern evolution during ion beam sputtering; reductionistic view

    NASA Astrophysics Data System (ADS)

    Kim, J.-H.; Kim, J.-S.

    2016-09-01

    The development of the ripple pattern during the ion beam sputtering (IBS) is expounded via the evolution of its constituent ripples. For that purpose, we perform numerical simulation of the ripple evolution that is based on Bradley-Harper model and its non-linear extension. The ripples are found to evolve via various well-defined processes such as ripening, averaging, bifurcation and their combinations, depending on their neighboring ripples. Those information on the growth kinetics of each ripple allow the detailed description of the pattern development in real space that the instability argument and the diffraction study both made in k-space cannot provide.

  2. A Fast Method of Fully Characterizing Sputtering Angular Dependence (Preprint)

    DTIC Science & Technology

    2008-06-17

    A new method has been demonstrated in which a single experiment is used to fully define the sputtering angular dependence of a given material. The...profilometry; the full sputtering angular dependence curve is then extracted using a numerical approach.

  3. Sputtering - A vacuum deposition method for coating material.

    NASA Technical Reports Server (NTRS)

    Spalvins, T.

    1972-01-01

    The sputtering method is discussed in terms of the unique features which sputter offers in depositing coatings. These features include versatility, momentum transfer, configuration of target, precise controls, and a relatively slow deposition rate. Sputtered films are evaluated in terms of adherence, coherence, and the internal stresses. The observed strong adherence is attributed to the high kinetic energies of the sputtered material, sputter etched surface, and the submicroscopic particle size. Film thickness can be controlled to a millionth of a centimeter. Very adherent films of sputtered PTFE (teflon) can be deposited in a single operation on any type of material and on any geometrical configuration.

  4. Sputtering - A vacuum deposition method for coating material.

    NASA Technical Reports Server (NTRS)

    Spalvins, T.

    1972-01-01

    The sputtering method is discussed in terms of the unique features which sputter offers in depositing coatings. These features include versatility, momentum transfer, configuration of target, precise controls, and a relatively slow deposition rate. Sputtered films are evaluated in terms of adherence, coherence, and the internal stresses. The observed strong adherence is attributed to the high kinetic energies of the sputtered material, sputter etched surface, and the submicroscopic particle size. Film thickness can be controlled to a millionth of a centimeter. Very adherent films of sputtered PTFE (teflon) can be deposited in a single operation on any type of material and on any geometrical configuration.

  5. Molecular sputter depth profiling using carbon cluster beams.

    PubMed

    Wucher, Andreas; Winograd, Nicholas

    2010-01-01

    Sputter depth profiling of organic films while maintaining the molecular integrity of the sample has long been deemed impossible because of the accumulation of ion bombardment-induced chemical damage. Only recently, it was found that this problem can be greatly reduced if cluster ion beams are used for sputter erosion. For organic samples, carbon cluster ions appear to be particularly well suited for such a task. Analysis of available data reveals that a projectile appears to be more effective as the number of carbon atoms in the cluster is increased, leaving fullerene ions as the most promising candidates to date. Using a commercially available, highly focused C (60) (q+) cluster ion beam, we demonstrate the versatility of the technique for depth profiling various organic films deposited on a silicon substrate and elucidate the dependence of the results on properties such as projectile ion impact energy and angle, and sample temperature. Moreover, examples are shown where the technique is applied to organic multilayer structures in order to investigate the depth resolution across film-film interfaces. These model experiments allow collection of valuable information on how cluster impact molecular depth profiling works and how to understand and optimize the depth resolution achieved using this technique.

  6. Nanopatterning of optical surfaces during low-energy ion beam sputtering

    NASA Astrophysics Data System (ADS)

    Liao, Wenlin; Dai, Yifan; Xie, Xuhui

    2014-06-01

    Ion beam figuring (IBF) provides a highly deterministic method for high-precision optical surface fabrication, whereas ion-induced microscopic morphology evolution would occur on surfaces. Consequently, the fabrication specification for surface smoothness must be seriously considered during the IBF process. In this work, low-energy ion nanopatterning of our frequently used optical material surfaces is investigated to discuss the manufacturability of an ultrasmooth surface. The research results indicate that ion beam sputtering (IBS) can directly smooth some amorphous or amorphizable material surfaces, such as fused silica, Si, and ULE under appropriate processing conditions. However, for IBS of a Zerodur surface, preferential sputtering together with curvature-dependent sputtering overcome ion-induced smoothing mechanisms, leading to the granular nanopatterns' formation and the coarsening of the surface. Furthermore, the material property difference at microscopic scales and the continuous impurity incorporation would affect the ion beam smoothing of optical surfaces. Overall, IBS can be used as a promising technique for ultrasmooth surface fabrication, which strongly depends on processing conditions and material characters.

  7. Ion beam sputtering of fluoropolymers. [etching polymer films and target surfaces

    NASA Technical Reports Server (NTRS)

    Sovey, J. S.

    1978-01-01

    Ion beam sputter processing rates as well as pertinent characteristics of etched targets and films are described. An argon ion beam source was used to sputter etch and deposit the fluoropolymers PTFE, FEP, and CTFE. Ion beam energy, current density, and target temperature were varied to examine effects on etch and deposition rates. The ion etched fluoropolymers yield cone or spire-like surface structures which vary depending upon the type of polymer, ion beam power density, etch time, and target temperature. Sputter target and film characteristics documented by spectral transmittance measurements, X-ray diffraction, ESCA, and SEM photomicrographs are included.

  8. Disorder-free sputtering method on graphene

    SciTech Connect

    Qiu Xue Peng; Shin Young Jun; Niu Jing; Kulothungasagaran, Narayanapillai; Kalon, Gopinadhan; Yang, Hyunsoo; Qiu Caiyu; Yu Ting

    2012-09-15

    Deposition of various materials onto graphene without causing any disorder is highly desirable for graphene applications. Especially, sputtering is a versatile technique to deposit various metals and insulators for spintronics, and indium tin oxide to make transparent devices. However, the sputtering process causes damage to graphene because of high energy sputtered atoms. By flipping the substrate and using a high Ar pressure, we demonstrate that the level of damage to graphene can be reduced or eliminated in dc, rf, and reactive sputtering processes.

  9. The role of the auxiliary atomic ion beam in C60(+)-Ar+ co-sputtering.

    PubMed

    Lin, Wei-Chun; Liu, Chi-Ping; Kuo, Che-Hung; Chang, Hsun-Yun; Chang, Chi-Jen; Hsieh, Tung-Han; Lee, Szu-Hsian; You, Yun-Wen; Kao, Wei-Lun; Yen, Guo-Ji; Huang, Chih-Chieh; Shyue, Jing-Jong

    2011-03-07

    Cluster ion sputtering has been proven to be an effective technique for depth profiling of organic materials. In particular, C(60)(+) ion beams are widely used to profile soft matter. The limitation of carbon deposition associated with C(60)(+) sputtering can be alleviated by concurrently using a low-energy Ar(+) beam. In this work, the role of this auxiliary atomic ion beam was examined by using an apparatus that could analyze the sputtered materials and the remaining target simultaneously using secondary ion mass spectrometry (SIMS) and X-ray photoelectron spectrometry (XPS), respectively. It was found that the auxiliary 0.2 kV Ar(+) stream was capable of slowly removing the carbon deposition and suppresses the carbon from implantation. As a result, a more steady sputtering condition was achieved more quickly with co-sputtering than by using C(60)(+) alone. Additionally, the Ar(+) beam was found to interfere with the C(60)(+) beam and may lower the overall sputtering rate and secondary ion intensity in some cases. Therefore, the current of this auxiliary ion beam needs to be carefully optimized for successful depth profiling.

  10. A self-sputtering ion source: A new approach to quiescent metal ion beams

    SciTech Connect

    Oks, Efim M.; Anders, Andre

    2009-09-03

    A new metal ion source is presented based on sustained self-sputtering plasma in a magnetron discharge. Metals exhibiting high self-sputtering yield like Cu, Ag, Zn, and Bi can be used in a high-power impulse magnetron sputtering (HIPIMS) discharge such that the plasma almost exclusively contains singly charged metal ions of the target material. The plasma and extracted ion beam are quiescent. The ion beams consist mostly of singly charged ions with a space-charge limited current density which reached about 10 mA/cm2 at an extraction voltage of 45 kV and a first gap spacing of 12 mm.

  11. Simulating discrete models of pattern formation by ion beam sputtering.

    PubMed

    Hartmann, Alexander K; Kree, Reiner; Yasseri, Taha

    2009-06-03

    A class of simple, (2+1)-dimensional, discrete models is reviewed, which allow us to study the evolution of surface patterns on solid substrates during ion beam sputtering (IBS). The models are based on the same assumptions about the erosion process as the existing continuum theories. Several distinct physical mechanisms of surface diffusion are added, which allow us to study the interplay of erosion-driven and diffusion-driven pattern formation. We present results from our own work on evolution scenarios of ripple patterns, especially for longer timescales, where nonlinear effects become important. Furthermore we review kinetic phase diagrams, both with and without sample rotation, which depict the systematic dependence of surface patterns on the shape of energy depositing collision cascades after ion impact. Finally, we discuss some results from more recent work on surface diffusion with Ehrlich-Schwoebel barriers as the driving force for pattern formation during IBS and on Monte Carlo simulations of IBS with codeposition of surfactant atoms.

  12. Destructive and constructive routes to prepare nanostructures on surfaces by low-energy ion beam sputtering

    NASA Astrophysics Data System (ADS)

    Rauschenbach, Bernd; Frost, Frank

    2016-10-01

    Various approaches for the preparation of nanostructures with dimension on macroscopic areas are known. In contrast to cost-intensive top-down lithographic techniques, various bottom-up methods based on ion beam technologies to form large arrays of nanostructured surfaces are well established. In principle, it can be distinguished between two routes at the preparation of nanostructures by low-energy ion bombardment sputtering. The destructive route is characterized that under certain conditions, given by the self-organization processes, the ion beam induced erosion process can lead to the formation of e.g. well-ordered Si nanostructures like dots or ripples on the surface. Using a constructive route, i.e. glancing angle deposition by ion beam sputtering, sculptured thin films consisting of various nanostructures of several shapes, such as inclined and vertical columns, screws, and spirals, were deposited on Si substrates. It will be shown that morphology, shape, and diameter of the structures are influenced and can thus be controlled by adjusting various deposition parameters, including substrate temperature and ratio of substrate rotational speed to film deposition rate.

  13. Particle beam experiments for the analysis of reactive sputtering processes in metals and polymer surfaces

    SciTech Connect

    Corbella, Carles; Grosse-Kreul, Simon; Kreiter, Oliver; Arcos, Teresa de los; Benedikt, Jan; Keudell, Achim von

    2013-10-15

    A beam experiment is presented to study heterogeneous reactions relevant to plasma-surface interactions in reactive sputtering applications. Atom and ion sources are focused onto the sample to expose it to quantified beams of oxygen, nitrogen, hydrogen, noble gas ions, and metal vapor. The heterogeneous surface processes are monitored in situ by means of a quartz crystal microbalance and Fourier transform infrared spectroscopy. Two examples illustrate the capabilities of the particle beam setup: oxidation and nitriding of aluminum as a model of target poisoning during reactive magnetron sputtering, and plasma pre-treatment of polymers (PET, PP)

  14. Micrometer-Scale Machining of Metals and Polymers Enabled by Focused Ion Beam Sputtering

    SciTech Connect

    Adams, D.P.; Benavides, G.L.; Vasile, M.J.

    1998-12-22

    This work combines focused ion beam sputtering and ultra-precision machining for microfabrication of metal alloys and polymers. Specifically, micro-end mills are made by Ga ion beam sputtering of a cylindrical tool shank. Using an ion energy of 20keV, the focused beam defines the tool cutting edges that have submicrometer radii of curvature. We demonstrate 25 {micro}m diameter micromilling tools having 2, 4 and 5 cutting edges. These tools fabricate fine channels, 26-28 microns wide, in 6061 aluminum, brass, and polymethyl methacrylate. Micro-tools are structurally robust and operate for more than 5 hours without fracture.

  15. Particle beam experiments for the analysis of reactive sputtering processes in metals and polymer surfaces.

    PubMed

    Corbella, Carles; Grosse-Kreul, Simon; Kreiter, Oliver; de los Arcos, Teresa; Benedikt, Jan; von Keudell, Achim

    2013-10-01

    A beam experiment is presented to study heterogeneous reactions relevant to plasma-surface interactions in reactive sputtering applications. Atom and ion sources are focused onto the sample to expose it to quantified beams of oxygen, nitrogen, hydrogen, noble gas ions, and metal vapor. The heterogeneous surface processes are monitored in situ by means of a quartz crystal microbalance and Fourier transform infrared spectroscopy. Two examples illustrate the capabilities of the particle beam setup: oxidation and nitriding of aluminum as a model of target poisoning during reactive magnetron sputtering, and plasma pre-treatment of polymers (PET, PP).

  16. Method of sputter etching a surface

    DOEpatents

    Henager, C.H. Jr.

    1984-02-14

    The surface of a target is textured by co-sputter etching the target surface with a seed material adjacent thereto, while the target surface is maintained at a pre-selected temperature. By pre-selecting the temperature of the surface while sputter etching, it is possible to predetermine the reflectance properties of the etched surface. The surface may be textured to absorb sunlight efficiently and have minimal emittance in the infrared region so as to be well-suited for use as a solar absorber for photothermal energy conversion. 4 figs.

  17. Method of sputter etching a surface

    DOEpatents

    Henager, Jr., Charles H.

    1984-01-01

    The surface of a target is textured by co-sputter etching the target surface with a seed material adjacent thereto, while the target surface is maintained at a pre-selected temperature. By pre-selecting the temperature of the surface while sputter etching, it is possible to predetermine the reflectance properties of the etched surface. The surface may be textured to absorb sunlight efficiently and have minimal emittance in the infrared region so as to be well-suited for use as a solar absorber for photothermal energy conversion.

  18. Peculiarities of temperature dependent ion beam sputtering and channeling of crystalline bismuth.

    PubMed

    Langegger, Rupert; Hradil, Klaudia; Steiger-Thirsfeld, Andreas; Bertagnolli, Emmerich; Lugstein, Alois

    2014-08-01

    In this paper, we report on the surface evolution of focused ion beam treated single crystalline Bi(001) with respect to different beam incidence angles and channeling effects. 'Erosive' sputtering appears to be the dominant mechanism at room temperature (RT) and diffusion processes during sputtering seem to play only a minor role for the surface evolution of Bi. The sputtering yield of Bi(001) shows anomalous behavior when increasing the beam incidence angle along particular azimuthal angles of the specimen. The behavior of the sputtering yield could be related to channeling effects and the relevant channeling directions are identified. Dynamic annealing processes during ion irradiation retain the crystalline quality of the Bi specimen allowing ion channeling at RT. Lowering the specimen temperature to T = -188 °C reduces dynamic annealing processes and thereby disables channeling effects. Furthermore unexpected features are observed at normal beam incidence angle. Spike-like features appear during the ion beam induced erosion, whose growth directions are not determined by the ion beam but by the channeling directions of the Bi specimen.

  19. Fabrication of OSOS cells by neutral ion beam sputtering. [Oxide Semiconductor On Silicon solar cells

    NASA Technical Reports Server (NTRS)

    Burk, D. E.; Dubow, J. B.; Sites, J. R.

    1976-01-01

    Oxide semiconductor on silicon (OSOS) solar cells have been fabricated from various indium tin oxide (In2O3)x(SnO2)1-x compositions sputtered onto p-type single crystal silicon substrates with a neutralized argon ion beam. High temperature processing or annealing was not required. The highest efficiency was achieved with x = 0.91 and was 12 percent. The cells are environmentally rugged, chemically stable, and show promise for still higher efficiencies. Moreover, the ion beam sputtering fabrication technique is amenable to low cost, continuous processing.

  20. Ion-beam-sputter modification of the surface morphology of biological implants

    NASA Technical Reports Server (NTRS)

    Weigand, A. J.; Banks, B. A.

    1977-01-01

    The surface chemistry and texture of materials used for biological implants may significantly influence their performance and biocompatibility. Recent interest in the microscopic control of implant surface texture has led to the evaluation of ion-beam sputtering as a potentially useful surface roughening technique. Ion sources, similar to electron-bombardment ion thrusters designed for propulsive applications, are used to roughen the surfaces of various biocompatible alloys or polymer materials. These materials are typically used for dental implants, orthopedic prostheses, vascular prostheses, and artificial heart components. Masking techniques and resulting surface textures are described along with progress concerning evaluation of the biological response to the ion-beam-sputtered surfaces.

  1. Ion beam sputter modification of the surface morphology of biological implants

    NASA Technical Reports Server (NTRS)

    Weigand, A. J.; Banks, B. A.

    1976-01-01

    The surface chemistry and texture of materials used for biological implants may significantly influence their performance and biocompatibility. Recent interest in the microscopic control of implant surface texture has led to the evaluation of ion beam sputtering as a potentially useful surface roughening technique. Ion sources, similar to electron bombardment ion thrusters designed for propulsive applications, are used to roughen the surfaces of various biocompatible alloys or polymer materials. These materials are typically used for dental implants, orthopedic prostheses, vascular prostheses, and artificial heart components. Masking techniques and resulting surface textures are described along with progress concerning evaluation of the biological response to the ion beam sputtered surfaces.

  2. Ion-beam-sputter modification of the surface morphology of biological implants

    NASA Technical Reports Server (NTRS)

    Weigand, A. J.; Banks, B. A.

    1977-01-01

    The surface chemistry and texture of materials used for biological implants may significantly influence their performance and biocompatibility. Recent interest in the microscopic control of implant surface texture has led to the evaluation of ion-beam sputtering as a potentially useful surface roughening technique. Ion sources, similar to electron-bombardment ion thrusters designed for propulsive applications, are used to roughen the surfaces of various biocompatible alloys or polymer materials. These materials are typically used for dental implants, orthopedic prostheses, vascular prostheses, and artificial heart components. Masking techniques and resulting surface textures are described along with progress concerning evaluation of the biological response to the ion-beam-sputtered surfaces.

  3. Evaluation of femtosecond laser damage to gold pulse compression gratings fabricated by magnetron sputtering and e-beam evaporation.

    PubMed

    Wang, Leilei; Kong, Fanyu; Xia, Zhilin; Jin, Yunxia; Huang, Haopeng; Li, Linxin; Chen, Junming; Cui, Yun; Shao, Jianda

    2017-04-10

    In this study, two kinds of Au-coated gratings (ACGs) with a period of 1740 lines/mm were fabricated and evaluated. For these ACG samples, magnetron sputtering and e-beam evaporation were used as the gold deposition process, and the samples had a bandwidth of at least 170 nm, with the -1st-order diffraction efficiency exceeding 90% around the center wavelength of 800 nm. The one-on-one damage threshold of ACGs fabricated by magnetron sputtering and e-beam evaporation measured at a pulse width of 60 fs was 0.59  J/cm2 and 0.43  J/cm2 in the case of the beam normal fluence, respectively. The typical damage morphology of the former type of samples was melting of the gold film, whereas those of the latter type were blisters and peeling off of the gold film. In theory, the electromagnetic field, temperature field, and thermal stress field distribution in the ACGs were calculated using the finite element method. We demonstrated that the adhesion between the gold film and the photoresist played an important role in determining the damage behavior. Thus, the laser resistance of ACG can be improved by enhancing the adhesion between the gold film and the photoresist, and magnetron sputtering was an alternative method to obtain ACGs with much better adhesion.

  4. Sputtering of silicon and glass substrates with polyatomic molecular ion beams generated from ionic liquids

    SciTech Connect

    Takeuchi, Mitsuaki Hoshide, Yuki; Ryuto, Hiromichi; Takaoka, Gikan H.

    2016-03-15

    The effect of irradiating 1-ethyl-3-methylimidazolium positive (EMIM{sup +}) or dicyanamide negative (DCA{sup –}) ion beams using an ionic liquid ion source was characterized concerning its sputtering properties for single crystalline Si(100) and nonalkaline borosilicate glass substrates. The irradiation of the DCA{sup –} ion beam onto the Si substrate at an acceleration voltage of 4 and 6 kV exhibited detectable sputtered depths greater than a couple of nanometers with an ion fluence of only 1 × 10{sup 15} ions/cm{sup 2}, while the EMIM{sup +} ion beam produced the same depths with an ion fluence 5 × 10{sup 15} ions/cm{sup 2}. The irradiation of a 4 kV DCA{sup –} ion beam at a fluence of 1 × 10{sup 16} ions/cm{sup 2} also yields large etching depths in Si substrates, corresponding to a sputtering yield of Si/DCA{sup – }= 10, and exhibits a smoothed surface roughness of 0.05 nm. The interaction between DCA{sup –} and Si likely causes a chemical reaction that relates to the high sputtering yield and forms an amorphous C-N capping layer that results in the smooth surface. Moreover, sputtering damage by the DCA{sup –} irradiation, which was estimated by Rutherford backscattering spectroscopy with the channeling technique, was minimal compared to Ar{sup +} irradiation at the same condition. In contrast, the glass substrates exhibited no apparent change in surface roughnesses when sputtered by the DCA{sup –} irradiation compared to the unirradiated glass substrates.

  5. Ion beam sputtering of Ti: Influence of process parameters on angular and energy distribution of sputtered and backscattered particles

    NASA Astrophysics Data System (ADS)

    Lautenschläger, T.; Feder, R.; Neumann, H.; Rice, C.; Schubert, M.; Bundesmann, C.

    2016-10-01

    In the present study, the influence of ion energy and geometrical parameters onto the angular and energy distribution of secondary particles for sputtering a Ti target with Ar ions is investigated. The angular distribution of the particle flux of the sputtered Ti atoms was determined by the collection method, i.e. by growing Ti films and measuring their thickness. The formal description of the particle flux can be realized by dividing it into an isotropic and an anisotropic part. The experimental data show that increasing the ion energy or decreasing the ion incidence angle lead to an increase of the isotropic part, which is in good agreement with basic sputtering theory. The energy distribution of the secondary ions was measured using an energy-selective mass spectrometer. The energy distribution of the sputtered target ions shows a maximum at an energy between 10 eV and 20 eV followed by a decay proportional to E-n, which is in principle in accordance with Thompson's theory, followed by a high energetic tail. When the sum of incidence angle and emission angle is increased, the high-energetic tail expands to higher energies and an additional peak due to direct sputtering events may occur. In the case of backscattered primary Ar ions, a maximum at an energy between 5 eV and 10 eV appears and, depending on the scattering geometry, an additional broad peak at a higher energy due to direct scattering events is observed. The center energy of the additional structure shifts systematically to higher energies with decreasing scattering angle or increasing ion energy. The experimental results are compared to calculations based on simple elastic two-particle-interaction theory and to simulations done with the Monte Carlo code SDTrimSP. Both confirm in principle the experimental findings.

  6. BN coatings deposition by magnetron sputtering of B and BN targets in electron beam generated plasma

    NASA Astrophysics Data System (ADS)

    Kamenetskikh, A. S.; Gavrilov, N. V.; Koryakova, O. V.; Cholakh, S. O.

    2017-05-01

    Boron nitride coatings were deposited by reactive pulsed magnetron sputtering of B and BN targets (50 kHz, 10 µs for B; 13.56 MHz for BN) at 2-20 mA/cm2 ion current density on the substrate. The effect of electron beam generated plasma on characteristics of magnetron discharge and phase composition of coatings was studied.

  7. Monte Carlo simulations of nanoscale focused neon ion beam sputtering of copper: elucidating resolution limits and sub-surface damage.

    PubMed

    Timilsina, R; Tan, S; Livengood, R; Rack, P D

    2014-12-05

    A three dimensional Monte Carlo simulation program was developed to model physical sputtering and to emulate vias nanomachined by the gas field ion microscope. Experimental and simulation results of focused neon ion beam induced sputtering of copper are presented and compared to previously published experiments. The simulation elucidates the nanostructure evolution during the physical sputtering of high aspect ratio nanoscale features. Quantitative information such as the energy-dependent sputtering yields, dose dependent aspect ratios, and resolution-limiting effects are discussed. Furthermore, the nuclear energy loss and implant concentration beneath the etch front is correlated with the sub-surface damage revealed by transmission electron microscopy at different beam energies.

  8. Topography evolution mechanism on fused silica during low-energy ion beam sputtering

    NASA Astrophysics Data System (ADS)

    Völlner, J.; Ziberi, B.; Frost, F.; Rauschenbach, B.

    2011-02-01

    In this study, the topography evolution of fused silica surfaces during low-energy ion beam erosion has been investigated depending on the ion incidence angle and with focus on the importance of the initial surface topography. Ripple prepattern, also prepared by ion beam erosion, that exhibits an anisotropic surface with adjustable surface amplitudes and gradients was utilized. Based on experimental results that confirm smoothing and patterning behavior, gradient-dependent sputtering is identified being the dominant topography evolution mechanism.

  9. Temporal evolution of the chemical structure during the pattern transfer by ion-beam sputtering

    NASA Astrophysics Data System (ADS)

    Ha, N.-B.; Jeong, S.; Yu, S.; Ihm, H.-I.; Kim, J.-S.

    2015-01-01

    Ru films patterned by ion-beam sputtering (IBS) serve as sacrificial masks for the transfer of the patterns to Si(1 0 0) and metallic glass substrates by continued IBS. Under the same sputter condition, however, both bare substrates remain featureless. Chemical analyses of the individual nano structures simultaneously with the investigation of their morphological evolution reveal that the pattern transfer, despite its apparent success, suffers from premature degradation before the mask is fully removed by IBS. Moreover, the residue of the mask or Ru atoms stubbornly remains near the surface, resulting in unintended doping or alloying of both patterned substrates.

  10. Effects of polycrystallinity in nano patterning by ion-beam sputtering

    SciTech Connect

    Yoon, Sun Mi; Kim, J.-S.; Yoon, D.; Cheong, H.; Kim, Y.; Lee, H. H.

    2014-07-14

    Employing graphites with distinctly different mean grain sizes, we study the effects of polycrystallinity on the pattern formation by ion-beam sputtering. The grains influence the growth of the ripples in a highly anisotropic fashion; both the mean uninterrupted ripple length along the ridges and the surface width depend on the mean size of the grains, which is attributed to the large sputter yield at the grain boundary compared with that on the terrace. In contrast, the ripple wavelength does not depend on the mean size of the grains, indicating that the mass transport across the grain boundaries should efficiently proceed by both thermal diffusion and ion-induced processes.

  11. Determining the sputter yields of molybdenum in low-index crystal planes via electron backscattered diffraction, focused ion beam and atomic force microscope

    SciTech Connect

    Huang, H.S.; Chiu, C.H.; Hong, I.T.; Tung, H.C.; Chien, F.S.-S.

    2013-09-15

    Previous literature has used several monocrystalline sputtering targets with various crystalline planes, respectively, to investigate the variations of the sputter yield of materials in different crystalline orientations. This study presents a method to measure the sputtered yields of Mo for the three low-index planes (100), (110), and (111), through using an easily made polycrystalline target. The procedure was firstly to use electron backscattered diffraction to identify the grain positions of the three crystalline planes, and then use a focused ion beam to perform the micro-milling of each identified grain, and finally the sputter yields were calculated from the removed volumes, which were measured by atomic force microscope. Experimental results showed that the sputter yield of the primary orientations for Mo varied as Y{sub (110)} > Y{sub (100)} > Y{sub (111)}, coincidental with the ranking of their planar atomic packing densities. The concept of transparency of ion in the crystalline substance was applied to elucidate these results. In addition, the result of (110) orientation exhibiting higher sputter yield is helpful for us to develop a Mo target with a higher deposition rate for use in industry. By changing the deformation process from straight rolling to cross rolling, the (110) texture intensity of the Mo target was significantly improved, and thus enhanced the deposition rate. - Highlights: • We used EBSD, FIB and AFM to measure the sputter yields of Mo in low-index planes. • The sputter yield of the primary orientations for Mo varied as Y{sub (110)} > Y{sub (100)} > Y{sub (111)}. • The transparency of ion was used to elucidate the differences in the sputter yield. • We improved the sputter rate of polycrystalline Mo target by adjusting its texture.

  12. Deposition of PTFE thin films by ion beam sputtering and a study of the ion bombardment effect

    NASA Astrophysics Data System (ADS)

    He, J. L.; Li, W. Z.; Wang, L. D.; Wang, J.; Li, H. D.

    1998-02-01

    Ion beam sputtering technique was employed to prepare thin films of Polytetrafluroethylene (PTFE). Simultaneous ion beam bombardment during film growth was also conducted in order to study the bombardment effects. Infrared absorption (IR), X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD) analysis was used to evaluate the material's integrity. It was found that PTFE thin films could be grown at room temperature by direct sputtering of a PTFE target. The film's composition and structure were shown to be dependent on the sputtering energy. Films deposited by single sputtering at higher energy (˜1500 eV) were structurally quite similar to the original PTFE material. Simultaneous ion beam bombarding during film growth caused defluorination and structural changes. Mechanism for sputtering deposition of such a polymeric material is also discussed.

  13. Effect of different ion beam energy on properties of amorphous carbon film fabricated by ion beam sputtering deposition (IBSD)

    NASA Astrophysics Data System (ADS)

    Bai, Lichun; Zhang, Guangan; Wu, Zhiguo; Wang, Jun; Yan, Pengxun

    2011-09-01

    Amorphous carbon (a-C) films were fabricated by ion beam sputtering technique. The influence of sputtering ion beam energy on bonding structure, morphologic, mechanical properties, tribological properties and corrosion resistance of a-C films are investigated systematically. Morphology study shows that lowest surface roughness exists for mid-ion beam energy. Improved adhesion is observed for the films that are prepared under high ion beam energy, attributed to film graphitization, low residual stress and mixed interface. Relatively, a-C films prepared with ion beam energy of 2 keV exhibits optimum sp 3 bond content, mechanical properties and corrosion resistance. It is found that the wear rate of DLC films decrease with increased ion beam energy in general, consistent with the varied trend of the H/ E value which has been regarded as a suitable parameter for predicting wear resistance of the coatings. The correlation of the sp 3 bond fraction in the films estimated from Raman spectroscopy with residual stress, nanohardness and corrosion resistance has been established.

  14. Nanopatterning of mica surface under low energy ion beam sputtering

    SciTech Connect

    Metya, A.; Ghose, D.; Mollick, S. A.; Majumdar, A.

    2012-04-01

    Irradiation of crystalline muscovite mica samples by 500 eV Ar{sup +} ions at different incident angles can induce significant surface morphological variations. A periodic ripple pattern of nano-dimensions forms in the angle window 47 deg. -70 deg. . On the other hand, tilted conical protrusions develop on the surface at grazing incidence angles around 80 deg. . From the derivative of the topographic images the distribution of the side-facet slopes in the ion incidence plane are measured, which is found to be strongly related to the pattern morphology. Additionally, it has been shown that, for the ripple structures, the base angles can be tuned by changing the ion fluence. An asymmetric sawtooth profile of the ripples obtained at low fluence is transformed to a symmetrical triangular profile at high fluence. As the slopes are found to be small, the pattern formation is not provoked by the gradient-dependent erosion mechanism rather it is the general effect of the curvature-dependent sputtering phenomena.

  15. Effect of surface texture by ion beam sputtering on implant biocompatibility and soft tissue attachment

    NASA Technical Reports Server (NTRS)

    Gibbons, D. F.

    1977-01-01

    The objectives in this report were to use the ion beam sputtering technique to produce surface textures on polymers, metals, and ceramics. The morphology of the texture was altered by varying both the width and depth of the square pits which were formed by ion beam erosion. The width of the ribs separating the pits were defined by the mask used to produce the texture. The area of the surface containing pits varies as the width was changed. The biological parameters used to evaluate the biological response to the texture were: (1) fibrous capsule and inflammatory response in subcutaneous soft tissue; (2) strength of the mechanical attachment of the textured surface by the soft tissue; and (3) morphology of the epidermal layer interfacing the textured surface of percutaneous connectors. Because the sputter yield on teflon ribs was approximately an order of magnitude larger than any other material the majority of the measurements presented in the report were obtained with teflon.

  16. Transparent and Conductive Cadmium-Tin Oxide Films Deposited by Atom Beam Sputtering

    NASA Astrophysics Data System (ADS)

    Nakazawa, Tatsuo; Ito, Kentaro

    1988-09-01

    Transparent and conductive cadmium-tin oxide films with resistivities of 9× 10-4 Ω cm and transmittance higher than 80% over the visible range were prepared by atom beam sputtering. The structure of the deposited film was amorphous and its composition was highly deficient in CdO compared with Cd2SnO4. This CTO film was used as the window layer of a heterojunction solar cell.

  17. Methods of beam cooling

    SciTech Connect

    Sessler, A.M.

    1996-02-01

    Diverse methods which are available for particle beam cooling are reviewed. They consist of some highly developed techniques such as radiation damping, electron cooling, stochastic cooling and the more recently developed, laser cooling. Methods which have been theoretically developed, but not yet achieved experimentally, are also reviewed. They consist of ionization cooling, laser cooling in three dimensions and stimulated radiation cooling.

  18. Nitrogen incorporation in carbon nitride films produced by direct and dual ion-beam sputtering

    SciTech Connect

    Abrasonis, G.; Gago, R.; Jimenez, I.; Kreissig, U.; Kolitsch, A.; Moeller, W.

    2005-10-01

    Carbon (C) and carbon nitride (CN{sub x}) films were grown on Si(100) substrates by direct ion-beam sputtering (IBS) of a carbon target at different substrate temperatures (room temperature-450 deg. C) and Ar/N{sub 2} sputtering gas mixtures. Additionally, the effect of concurrent nitrogen-ion assistance during the growth of CN{sub x} films by IBS was also investigated. The samples were analyzed by elastic recoil detection analysis (ERDA) and x-ray absorption near-edge spectroscopy (XANES). The ERDA results showed that significant nitrogen amount (up to 20 at. %) was incorporated in the films, without any other nitrogen source but the N{sub 2}-containing sputtering gas. The nitrogen concentration is proportional to the N{sub 2} content in the sputtering beam and no saturation limit is reached under the present working conditions. The film areal density derived from ERDA revealed a decrease in the amount of deposited material at increasing growth temperature, with a correlation between the C and N losses. The XANES results indicate that N atoms are efficiently incorporated into the carbon network and can be found in different bonding environments, such as pyridinelike, nitrilelike, graphitelike, and embedded N{sub 2} molecules. The contribution of molecular and pyridinelike nitrogen decreases when the temperature increases while the contribution of the nitrilelike nitrogen increases. The concurrent nitrogen ion assistance resulted in the significant increase of the nitrogen content in the film but it induced a further reduction of the deposited material. Additionally, the assisting ions inhibited the formation of the nitrilelike configurations while promoting nitrogen environments in graphitelike positions. The nitrogen incorporation and release mechanisms are discussed in terms of film growth precursors, ion bombardment effects, and chemical sputtering.

  19. Method and apparatus for improved high power impulse magnetron sputtering

    DOEpatents

    Anders, Andre

    2013-11-05

    A high power impulse magnetron sputtering apparatus and method using a vacuum chamber with a magnetron target and a substrate positioned in the vacuum chamber. A field coil being positioned between the magnetron target and substrate, and a pulsed power supply and/or a coil bias power supply connected to the field coil. The pulsed power supply connected to the field coil, and the pulsed power supply outputting power pulse widths of greater that 100 .mu.s.

  20. Kinetic Monte Carlo simulation of self-organized pattern formation induced by ion beam sputtering using crater functions

    NASA Astrophysics Data System (ADS)

    Yang, Zhangcan; Lively, Michael A.; Allain, Jean Paul

    2015-02-01

    The production of self-organized nanostructures by ion beam sputtering has been of keen interest to researchers for many decades. Despite numerous experimental and theoretical efforts to understand ion-induced nanostructures, there are still many basic questions open to discussion, such as the role of erosion or curvature-dependent sputtering. In this work, a hybrid MD/kMC (molecular dynamics/kinetic Monte Carlo) multiscale atomistic model is developed to investigate these knowledge gaps, and its predictive ability is validated across the experimental parameter space. This model uses crater functions, which were obtained from MD simulations, to model the prompt mass redistribution due to single-ion impacts. Defect migration, which is missing from previous models that use crater functions, is treated by a kMC Arrhenius method. Using this model, a systematic study was performed for silicon bombarded by Ar+ ions of various energies (100 eV, 250 eV, 500 eV, 700 eV, and 1000 eV) at incidence angles of 0∘ to 80∘. The simulation results were compared with experimental findings, showing good agreement in many aspects of surface evolution, such as the phase diagram. The underestimation of the ripple wavelength by the simulations suggests that surface diffusion is not the main smoothening mechanism for ion-induced pattern formation. Furthermore, the simulated results were compared with moment-description continuum theory and found to give better results, as the simulation did not suffer from the same mathematical inconsistencies as the continuum model. The key finding was that redistributive effects are dominant in the formation of flat surfaces and parallel-mode ripples, but erosive effects are dominant at high angles when perpendicular-mode ripples are formed. Ion irradiation with simultaneous sample rotation was also simulated, resulting in arrays of square-ordered dots. The patterns obtained from sample rotation were strongly correlated to the rotation speed and to

  1. Optical Properties of dual ion beam sputtered Indium Tin Oxide films on glass and Silicon

    NASA Astrophysics Data System (ADS)

    Simpson, Nelson; Geerts, Wilhelmus; Bandyopadhyay, Anup

    2012-03-01

    Indium Tin Oxide (ITO) is a transparent conducting material that finds application in flat panel displays, solar cells, and photodetectors. High quality ITO films, i.e. films with a large transparency and a high conductivity, are normally deposited above room temperature often at 300-400 C. This high deposition temperature eliminates most plastics as substrates. To lower the substrate deposition temperature we are applying atomic instead of molecular oxygen during the sputtering process. A dual ion beam sputtering system (DIBS) has been modified to allow the substrate to be exposed to an atomic oxygen beam at 45 degrees angle of incidence. Thin films were sputtered as a function of atomic oxygen flux and substrate temperature on glass, silicon, and sapphire substrates. The optical properties were measured by spectroscopic ellipsometry, reflectometry, and FTIR. Film thickness and bandgap were determined from the optical properties in the visible part of the spectrum. Mobility was determined from the infrared part of the spectruam. Optical properties appear to vary with the film thickness, the oxygen flux, and the substrate temperature. Roughness of the samples was independently measured by AFM. This work is supported by a grant from research corporation (10775).

  2. Method and apparatus for sputtering utilizing an apertured electrode and a pulsed substrate bias

    NASA Technical Reports Server (NTRS)

    Przybyszewski, J. S.; Shaltens, R. K. (Inventor)

    1973-01-01

    The method and equipment used for sputtering by use of an apertured electrode and a pulsed substrate bias are discussed. The technique combines the advantages of ion plating with the versatility of a radio frequency sputtered source. Electroplating is accomplished by passing a pulsed high voltage direct current to the article being plated during radio frequency sputtering.

  3. Transparent aluminium nanowire electrodes with optical and electrical anisotropic response fabricated by defocused ion beam sputtering

    NASA Astrophysics Data System (ADS)

    Repetto, Diego; Giordano, Maria Caterina; Martella, Christian; Buatier de Mongeot, Francesco

    2015-02-01

    Self-organized Al nanowire (NW) electrodes have been obtained by defocused Ion Beam Sputtering (IBS) of polycrystalline Al films grown by sputter deposition. The electrical sheet resistance of the electrode has been acquired in situ during ion bombardment of the samples, evidencing an increase of the electronic transport anisotropy as a function of ion fluence between the two directions parallel and orthogonal to the NWs axis. Optical spectra in transmission also show a large dichroism between the two directions, suggesting the role of localized plasmons in the UV spectral range. The results show that Al NW electrodes, prepared under experimental conditions which are compatible with those of conventional industrial coaters and implanters, could represent a low cost alternative to the transparent conductive oxides employed in optoelectronic devices.

  4. Ion beam sputter etching of orthopedic implanted alloy MP35N and resulting effects on fatigue

    NASA Technical Reports Server (NTRS)

    Wintucky, E. G.; Christopher, M.; Bahnuik, E.; Wang, S.

    1981-01-01

    The effects of two types of argon ion sputter etched surface structures on the tensile stress fatigue properties of orthopedic implant alloy MP35N were investigated. One surface structure was a natural texture resulting from direct bombardment by 1 keV argon ions. The other structure was a pattern of square holes milled into the surface by a 1 keV argon ion beam through a Ni screen mask. The etched surfaces were subjected to tensile stress only in fatigue tests designed to simulate the cyclic load conditions experienced by the stems of artificial hip joint implants. Both types of sputter etched surface structures were found to reduce the fatigue strength below that of smooth surface MP35N.

  5. Second order nonlinear optical properties of zinc oxide films deposited by low temperature dual ion beam sputtering

    SciTech Connect

    Larciprete, M.C.; Passeri, D.; Michelotti, F.; Paoloni, S.; Sibilia, C.; Bertolotti, M.; Belardini, A.; Sarto, F.; Somma, F.; Lo Mastro, S.

    2005-01-15

    We investigated second order optical nonlinearity of zinc oxide thin films, grown on glass substrates by the dual ion beam sputtering technique under different deposition conditions. Linear optical characterization of the films was carried out by spectrophotometric optical transmittance and reflectance measurements, giving the complex refractive index dispersion. Resistivity of the films was determined using the four-point probe sheet resistance method. Second harmonic generation measurements were performed by means of the Maker fringes technique where the fundamental beam was originated by nanosecond laser at {lambda}=1064 nm. We found a relatively high nonlinear optical response, and evidence of a dependence of the nonlinear coefficient on the deposition parameters for each sample. Moreover, the crystalline properties of the films were investigated by x-ray diffraction measurements and correlation with second order nonlinearity were analyzed. Finally, we investigated the influence of the oxygen flow rate during the deposition process on both the second order nonlinearity and the structural properties of the samples.

  6. Oxygen Interstitial Defects in Sc2O3 Thin Films Deposited with Reactive Ion Beam Sputtering

    NASA Astrophysics Data System (ADS)

    Schiltz, Drew; Langston, Peter; Krous, Erik; Patel, Dinesh; Markosyan, Ashot; Route, Rodger; Menoni, Carmen; Colorado State University Team; Stanford University Team

    2014-03-01

    Numerous defects may develop when depositing amorphous thin films with reactive ion beam sputtering, including interstitials and vacancies. In many cases, these defects limit the functionality of the film, degrading both the mechanical and optical properties. This study aims to investigate the nature of oxygen interstitial point defects in scandium oxide thin films and characterize the effect on composition, optical absorption and mechanical stress. The films are deposited with argon ion beam sputtering of a scandium metal target. The density of defects is correlated with the oxygen partial pressure, revealing an optimal condition where defects are minimized. Furthermore, the defect density also demonstrates a direct correlation with the main ion beam accelerating voltage. The native oxygen defects behave as shallow levels, with binding energies in the 1-2 eV range. Work supported by the DoD Office of Naval Research and the High Energy Laser Program of the DoD Joint Technology Office. National Science Foundation Engineering Research Center for Extreme Ultraviolet Science and Technology, Department of Electrical and Computer Engineering, Colorado State University, Fort Collins, CO 80523, USA.

  7. The optimization of incident angles of low-energy oxygen ion beams for increasing sputtering rate on silicon samples

    NASA Astrophysics Data System (ADS)

    Sasaki, T.; Yoshida, N.; Takahashi, M.; Tomita, M.

    2008-12-01

    In order to determine an appropriate incident angle of low-energy (350-eV) oxygen ion beam for achieving the highest sputtering rate without degradation of depth resolution in SIMS analysis, a delta-doped sample was analyzed with incident angles from 0° to 60° without oxygen bleeding. As a result, 45° incidence was found to be the best analytical condition, and it was confirmed that surface roughness did not occur on the sputtered surface at 100-nm depth by using AFM. By applying the optimized incident angle, sputtering rate becomes more than twice as high as that of the normal incident condition.

  8. Ion beam sputter-etched ventricular catheter for hydrocephalus shunt

    NASA Technical Reports Server (NTRS)

    Banks, B. A. (Inventor)

    1983-01-01

    A cerebrospinal fluid shunt in the form of a ventricular catheter for controlling the condition of hydrocephalus by relieving the excessive cerebrospinal fluid pressure is described. A method for fabrication of the catheter and shunting the cerebral fluid from the cerebral ventricles to other areas of the body is also considered. Shunt flow failure occurs if the ventricle collapse due to improper valve function causing overdrainage. The ventricular catheter comprises a multiplicity of inlet microtubules. Each microtubule has both a large openings at its inlet end and a multiplicity of microscopic openings along its lateral surfaces.

  9. Characterization of Si-N films prepared by reactive ion beam sputtering

    NASA Astrophysics Data System (ADS)

    Aggarwal, M. D.; Ashok, S.; Fonash, S. J.

    1982-05-01

    Application of silicon-nitride (Si-N) as a passivant in com-pound semiconductor technology requires a low-temperature deposition process to prevent dissociation of the volatile constituents of the semiconductor. With this in mind, an exploratory study of Si-N films prepared at room temperature using low-energy, reactive ion-beam sputtering has been carried out. The electrical and optical characteristics of the films have been studied, and an annealing step is found necessary to reduce the conductivity of the nitride and im-prove the interfacial properties.

  10. Adherence of ion beam sputter deposited metal films on H-13 steel

    NASA Technical Reports Server (NTRS)

    Mirtich, M. J.

    1980-01-01

    An electron bombardment argon ion source was used to sputter deposit 17 different metal and metal oxide films ranging in thickness from 1 to 8 micrometers on H-13 steel substrates. The film adherence to the substrate surface was measured using a tensile test apparatus. Comparisons in bond strength were made between ion beam, ion plating, and RF deposited films. A protective coating to prevent heat checking in H-13 steel dies used for aluminum die casting was studied. The results of exposing the coated substrates to temperatures up to 700 degrees are presented.

  11. Self-organized ordering of nanostructures produced by ion-beam sputtering.

    PubMed

    Castro, Mario; Cuerno, Rodolfo; Vázquez, Luis; Gago, Raúl

    2005-01-14

    We study the self-organized ordering of nanostructures produced by ion-beam sputtering of targets amorphizing under irradiation. By introducing a model akin to models of pattern formation in aeolian sand dunes, we extend consistently the current continuum theory of erosion by IBS. We obtain new nonlinear effects responsible for the in-plane ordering of the structures, whose strength correlates with the degree of ordering found in experiments. Our results highlight the importance of redeposition and surface viscous flow to this nanopattern formation process.

  12. Fullerenelike arrangements in carbon nitride thin films grown by direct ion beam sputtering

    SciTech Connect

    Gago, R.; Abrasonis, G.; Muecklich, A.; Moeller, W.; Czigany, Zs.; Radnoczi, G.

    2005-08-15

    Carbon nitride (CN{sub x}) thin films were grown by direct N{sub 2}/Ar ion beam sputtering of a graphite target at moderate substrate temperatures (300-750 K). The resulting microstructure of the films was studied by high-resolution transmission electron microscopy. The images showed the presence of curved basal planes in fullerenelike arrangements. The achievement and evolution of these microstructural features are discussed in terms of nitrogen incorporation, film-forming flux, and ion bombardment effects, thus adding to the understanding of the formation mechanisms of curved graphitic structures in CN{sub x} materials.

  13. Physical processes in directed ion beam sputtering. Ph.D. Thesis

    NASA Technical Reports Server (NTRS)

    Robinson, R. S.

    1979-01-01

    The general operation of a discharge chamber for the production of ions is described. A model is presented for the magnetic containment of both primary and secondary or Maxwellian electrons in the discharge plasma. Cross sections were calculated for energy and momentum transfer in binary collisions between like pairs of Ar, Kr, and Xe atoms in the energy range from about 1 eV to 1000 eV. These calculations were made from available pair interaction potentials using a classical model. Experimental data from the literature were fit to a theoretical expression for the Ar resonance charge exchange cross section over the same energy range. A model was developed that describes the processes of conical texturing of a surface due to simultaneous directed ion beam etching and sputter deposition of an impurity material. This model accurately predicts both a minimum temperature for texturing to take place and the variation of cone density with temperature. It also provides the correct order of magnitude of cone separation. It was predicted from the model, and subsequently verified experimentally, that a high sputter yield material could serve as a seed for coning of a lower sputter yield substrate. Seeding geometries and seed deposition rates were studied to obtain an important input to the theoretical texturing model.

  14. Method of making segmented pyrolytic graphite sputtering targets

    DOEpatents

    McKernan, M.A.; Alford, C.S.; Makowiecki, D.M.; Chen, C.W.

    1994-02-08

    Anisotropic pyrolytic graphite wafers are oriented and bonded together such that the graphite's high thermal conductivity planes are maximized along the back surface of the segmented pyrolytic graphite target to allow for optimum heat conduction away from the sputter target's sputtering surface and to allow for maximum energy transmission from the target's sputtering surface. 2 figures.

  15. Method of making segmented pyrolytic graphite sputtering targets

    DOEpatents

    McKernan, Mark A.; Alford, Craig S.; Makowiecki, Daniel M.; Chen, Chih-Wen

    1994-01-01

    Anisotropic pyrolytic graphite wafers are oriented and bonded together such that the graphite's high thermal conductivity planes are maximized along the back surface of the segmented pyrolytic graphite target to allow for optimum heat conduction away from the sputter target's sputtering surface and to allow for maximum energy transmission from the target's sputtering surface.

  16. Conformal growth of Mo/Si multilayers on grating substrates using collimated ion beam sputtering

    SciTech Connect

    Voronov, D. L.; Cambie, R.; Dhuey, S.; Gullikson, E. M.; Warwick, T.; Yashchuk, V. V.; Padmore, H. A.; Gawlitza, P.; Braun, S.

    2012-05-01

    Deposition of multilayers on saw-tooth substrates is a key step in the fabrication of multilayer blazed gratings (MBG) for extreme ultraviolet and soft x-rays. Growth of the multilayers can be perturbed by shadowing effects caused by the highly corrugated surface of the substrates, which results in distortion of the multilayer stack structure and degradation of performance of MBGs. To minimize the shadowing effects, we used an ion-beam sputtering machine with a highly collimated atomic flux to deposit Mo/Si multilayers on saw-tooth substrates. The sputtering conditions were optimized by finding a balance between smoothening and roughening processes in order to minimize degradation of the groove profile in the course of deposition and at the same time to keep the interfaces of a multilayer stack smooth enough for high efficiency. An optimal value of energy of 200 eV for sputtering Kr{sup +} ions was found by deposition of test multilayers on flat substrates at a range of ion energies. Two saw-tooth substrates were deposited at energies of 200 eV and 700 eV for the sputtering ions. It was found that reduction of the ion energy improved the blazing performance of the MBG and resulted in a 40% gain in the diffraction efficiency due to better replication of the groove profile by the multilayer. As a result of the optimization performed, an absolute diffraction efficiency of 28.8% was achieved for the 2nd blaze order of the MBG with a groove density of 7350 lines/mm at a wavelength of 13.5 nm. Details of the growth behavior of the multilayers on flat and saw-tooth substrates are discussed in terms of the linear continuous model of film growth.

  17. ITO/InP solar cells: A comparison of devices fabricated by ion beam and RF sputtering of the ITO

    NASA Technical Reports Server (NTRS)

    Coutts, T. J.

    1987-01-01

    This work was performed with the view of elucidating the behavior of indium tin oxide/indium phosphide (ITO/InP) solar cells prepared by RF and ion beam sputtering. It was found that using RF sputter deposition of the ITO always leads to more efficient devices than ion beam sputter deposition. An important aspect of the former technique is the exposure of the single crystal p-InP substrates to a very low plasma power prior to deposition. Substrates treated in this manner have also been used for ion beam deposition of ITO. In this case the cells behave very similarly to the RF deposited cells, thus suggesting that the lower power plasma exposure (LPPE) is the crucial process step.

  18. The ion beam sputtering facility at KURRI: Coatings for advanced neutron optical devices

    NASA Astrophysics Data System (ADS)

    Hino, Masahiro; Oda, Tatsuro; Kitaguchi, Masaaki; Yamada, Norifumi L.; Tasaki, Seiji; Kawabata, Yuji

    2015-10-01

    We describe a film coating facility for the development of multilayer mirrors for use in neutron optical devices that handle slow neutron beams. Recently, we succeeded in fabricating a large neutron supermirror with high reflectivity using an ion beam sputtering system (KUR-IBS), as well as all neutron supermirrors in two neutron guide tubes at BL06 at J-PARC/MLF. We also realized a large flexible self-standing m=5 NiC/Ti supermirror and very small d-spacing (d=1.65 nm) multilayer sheets. In this paper, we present an overview of the performance and utility of non-magnetic neutron multilayer mirrors fabricated with the KUR-IBS

  19. Ion Beam Sputter Fabrication of Micro-Grooving and Micro-Threading Tools

    SciTech Connect

    ADAMS,DAVID P.; VASILE,M.J.; KRISHNAN,A.S.M.

    1999-11-05

    This paper presents techniques for fabricating microscopic, nonplanar features in a variety of materials. Micro-grooving and micro-threading tools having cutting dimensions of 10-30{micro}m are made by focused ion beam sputtering and used in ultra-precision machining. Tool fabrication involves directing a 20 keV gallium beam at polished cylindrical punches made of cobalt M42 high-speed steel or C2 tungsten carbide. This creates cutting edges having radii of curvature less than 0.4 {micro}m, and rake features similar to conventional lathe tools. Clearance for minimizing frictional drag of a tool results from the sputter yield dependence on ion herd target incidence angle. Numerically controlled, ultra-precision machining with micro-grooving tools results in a close matching between tool width and feature size. Microtools controllably machine 13 {micro}m wide, 4 {micro}m deep, helical grooves in polymethyl methacrylate and 6061-T6 Al cylindrical substrates. Micro-grooving tools also fabricate sinusoidal waveform features in polished metal substrates.

  20. Microwave ion beam sources for reactive etching and sputter deposition applications

    NASA Astrophysics Data System (ADS)

    Jolly, T. W.; Blackborrow, P.

    1990-01-01

    There are important industrial applications for broadbeam microwave ion beam sources which give current densities in the range 0.1-4.0 mA/cm2 at energies between 100 and 1500 eV. These include machines for the production of multilayer optical coatings by means of ion beam sputter deposition, and cassette-to-cassette machines for inert and reactive ion beam etching of semiconductor wafers. In both cases, the ability to run reliably, and at high power for several hundred hours without unscheduled maintenance is most valuable, and may well justify the extra cost of such a source over the conventional Kaufman hot-filament source. The sources discussed in this article use dual high-power grids of pyrolytic graphite, using a self-aligning design, to produce uniform ion beams with diameters of up to l2 cm. Stabilities of better than 1% over several hundred hours of operation are achieved. The design of the discharge chamber and grids enables operation on most inert and reactive gas mixtures. Typical run data and beam profiles obtained when running on argon, oxygen, and chlorine will be presented.

  1. A combined ion-sputtering and electron-beam annealing device for the in vacuo postpreparation of scanning probes.

    PubMed

    Eder, Georg; Schlögl, Stefan; Macknapp, Klaus; Heckl, Wolfgang M; Lackinger, Markus

    2011-03-01

    We describe the setup, characteristics, and application of an in vacuo ion-sputtering and electron-beam annealing device for the postpreparation of scanning probes (e.g., scanning tunneling microscopy (STM) tips) under ultrahigh vacuum (UHV) conditions. The proposed device facilitates the straightforward implementation of a common two-step cleaning procedure, where the first step consists of ion-sputtering, while the second step heals out sputtering-induced defects by thermal annealing. In contrast to the standard way, no dedicated external ion-sputtering gun is required with the proposed device. The performance of the described device is demonstrated by SEM micrographs and energy dispersive x-ray characterization of electrochemically etched tungsten tips prior and after postprocessing.

  2. The influence of sequence of precursor films on CZTSe thin films prepared by ion-beam sputtering deposition

    NASA Astrophysics Data System (ADS)

    Zhao, Jun; Liang, Guangxing; Zeng, Yang; Fan, Ping; Hu, Juguang; Luo, Jingting; Zhang, Dongping

    2017-02-01

    The CuZnSn (CZT) precursor thin films are grown by ion-beam sputtering Cu, Zn, Sn targets with different orders and then sputtering Se target to fabricate Cu2ZnSnSe4 (CZTSe) absorber thin films on molybdenum substrates. They are annealed in the same vacuum chamber at 400 °C. The characterization methods of CZTSe thin films include X-ray diffraction (XRD), energy dispersive spectroscopy (EDS), scanning electron microscopy (SEM), and X-ray photoelectron spectra (XPS) in order to study the crystallographic properties, composition, surface morphology, electrical properties and so on. The results display that the CZTSe thin films got the strongest diffraction peak intensity and were with good crystalline quality and its morphology appeared smooth and compact with a sequence of Cu/Zn/Sn/Se, which reveals that the expected states for CZTSe are Cu1+, Zn2+, Sn4+, Se2+. With the good crystalline quality and close to ideal stoichiometric ratio the resistivity of the CZTSe film with the sequence of Cu/Zn/Sn/Se is lower, whose optical band gap is about 1.50 eV. Project supported by the National Natural Science Foundation of China (No. 61404086), the Basical Research Program of Shenzhen (Nos. JCYJ20150324140036866, JCYJ20150324141711581), and the Natural Science Foundation of SZU (No. 2014017).

  3. Sputtering: A vacuum deposition method for coating material

    NASA Technical Reports Server (NTRS)

    Spalvins, T.

    1972-01-01

    The sputtering process is described in terms of its features: versatility, momentum transfer, configuration of target, precise controls and the relatively slow deposition rate. Sputtered films are evaluated in terms of adherence, coherence, and internal stresses. The strong adherence is attributed to the high kinetic energies of the sputtered material, sputter etched (cleaned) surface, and the submicroscopic particle size. An illustration is a sputtered solid film lubricant such as MoS2. Friction tests were conducted on a thin, 2000 A deg thick MoS2 film. These films are very dense and without observable pinholes, and the particle to particle cohesion is strong. Tolerances (film thickness) can be controlled to a millionth of a centimeter. Very adherent films of sputtered Teflon can be deposited in a single operation on any type of material (metal, glass, paper) and on any geometrical configuration with a dense adherent film.

  4. Method for measuring and controlling beam current in ion beam processing

    DOEpatents

    Kearney, Patrick A.; Burkhart, Scott C.

    2003-04-29

    A method for producing film thickness control of ion beam sputter deposition films. Great improvements in film thickness control is accomplished by keeping the total current supplied to both the beam and suppressor grids of a radio frequency (RF) in beam source constant, rather than just the current supplied to the beam grid. By controlling both currents, using this method, deposition rates are more stable, and this allows the deposition of layers with extremely well controlled thicknesses to about 0.1%. The method is carried out by calculating deposition rates based on the total of the suppressor and beam currents and maintaining the total current constant by adjusting RF power which gives more consistent values.

  5. Structure and composition of zirconium carbide thin-film grown by ion beam sputtering for optical applications

    NASA Astrophysics Data System (ADS)

    Singh, Amol; Modi, Mohammed H.; Dhawan, Rajnish; Lodha, G. S.

    2014-04-01

    Thin film of compound material ZrC was deposited on Si (100) wafer using ion beam sputtering method. The deposition was carried out at room temperature and at base pressure of 3×10-5 Pa. X-ray photoelectron spectroscopy (XPS) measurements were performed for determining the surface chemical compositions. Grazing incidence x-ray reflectivity (GIXRR) measurements were performed to study the film thickness, roughness and density. From GIXRR curve roughness value of the film was found less than 1 nm indicating smooth surface morphology. Films density was found 6.51 g/cm3, which is close to bulk density. Atomic force microscopy (AFM) measurements were performed to check the surface morphology. AFM investigation showed that the film surface is smooth, which corroborate the GIXRR data. Figure 2 of the original article PDF file, as supplied to AIP Publishing, contained a PDF processing error. This article was updated on 12 May 2014 to correct that error.

  6. Controlled growth of few-layer hexagonal boron nitride on copper foils using ion beam sputtering deposition.

    PubMed

    Wang, Haolin; Zhang, Xingwang; Meng, Junhua; Yin, Zhigang; Liu, Xin; Zhao, Yajuan; Zhang, Liuqi

    2015-04-01

    Ion beam sputtering deposition (IBSD) is used to synthesize high quality few-layer hexagonal boron nitride (h-BN) on copper foils. Compared to the conventional chemical vapor deposition, the IBSD technique avoids the use of unconventional precursors and is much easier to control, which should be very useful for the large-scale production of h-BN in the future.

  7. Laser beam pulse formatting method

    DOEpatents

    Daly, Thomas P.; Moses, Edward I.; Patterson, Ralph W.; Sawicki, Richard H.

    1994-01-01

    A method for formatting a laser beam pulse (20) using one or more delay loops (10). The delay loops (10) have a partially reflective beam splitter (12) and a plurality of highly reflective mirrors (14) arranged such that the laser beam pulse (20) enters into the delay loop (10) through the beam splitter (12) and circulates therein along a delay loop length (24) defined by the mirrors (14). As the laser beam pulse (20) circulates within the delay loop (10) a portion thereof is emitted upon each completed circuit when the laser beam pulse (20) strikes the beam splitter (12). The laser beam pulse (20) is thereby formatted into a plurality of sub-pulses (50, 52, 54 and 56). The delay loops (10) are used in combination to produce complex waveforms by combining the sub-pulses (50, 52, 54 and 56) using additive waveform synthesis.

  8. Apparatus for and method of controlling sputter coating

    SciTech Connect

    Boys, R.

    1985-02-19

    The magnetic field of a magnetron sputter coating apparatus is controlled in response to measurements of plasma parameters to control deposition parameters, such as sputter deposition rate and material deposition thickness profile. From time to time the apparatus is standardized to change preset values for parameters of the plasma to manage the deposition parameters.

  9. Scanning-electron-microscopy observations and mechanical characteristics of ion-beam-sputtered surgical implant alloys

    NASA Technical Reports Server (NTRS)

    Weigand, A. J.; Meyer, M. L.; Ling, J. S.

    1977-01-01

    An electron bombardment ion thruster was used as an ion source to sputter the surfaces of orthopedic prosthetic metals. Scanning electron microscopy photomicrographs were made of each ion beam textured surface. The effect of ion texturing an implant surface on its bond to bone cement was investigated. A Co-Cr-W alloy and surgical stainless steel were used as representative hard tissue implant materials to determine effects of ion texturing on bulk mechanical properties. Work was done to determine the effect of substrate temperature on the development of an ion textured surface microstructure. Results indicate that the ultimate strength of the bulk materials is unchanged by ion texturing and that the microstructure will develop more rapidly if the substrate is heated prior to ion texturing.

  10. Fluoride antireflection coatings for deep ultraviolet optics deposited by ion-beam sputtering.

    PubMed

    Yoshida, Toshiya; Nishimoto, Keiji; Sekine, Keiichi; Etoh, Kazuyuki

    2006-03-01

    Optically high quality coatings of fluoride materials are required in deep ultraviolet (DUV) lithography. We have applied ion-beam sputtering (IBS) to obtain fluoride films with smooth surfaces. The extinction coefficients were of the order of 10(-4) at the wavelength of 193 nm due to the reduction of their absorption loss. The transmittance of the MgF2/GdF3 antireflection coating was as high as 99.7% at the wavelength of 193 nm. The surfaces of the IBS deposited films were so smooth that the surface roughness of the A1F3/GdF3 film was comparable with that of the CaF2 substrate. The MgF2/GdF3 coating fulfilled the temperature and humidity requirements of military specification. Thus, the IBS deposited fluoride films are promising candidate for use in the DUV lithography optics.

  11. Atom beam sputtered Ag-TiO2 plasmonic nanocomposite thin films for photocatalytic applications

    NASA Astrophysics Data System (ADS)

    Singh, Jaspal; Sahu, Kavita; Pandey, A.; Kumar, Mohit; Ghosh, Tapas; Satpati, B.; Som, T.; Varma, S.; Avasthi, D. K.; Mohapatra, Satyabrata

    2017-07-01

    The development of nanocomposite coatings with highly enhanced photocatalytic activity is important for photocatalytic purification of water and air. We report on the synthesis of Ag-TiO2 nanocomposite thin films with highly enhanced photocatalytic activity by atom beam co-sputtering technique. The effects of Ag concentration on the structural, morphological, optical, plasmonic and photocatalytic properties of the nanocomposite thin films were investigated. UV-visible DRS studies revealed the presence of surface plasmon resonance (SPR) peak characteristic of Ag nanoparticles together with the excitonic absorption peak originating from TiO2 nanoparticles in the nanocomposites. XRD studies showed that the nanocomposite thin films consist of Ag nanoparticles and rutile TiO2 nanoparticles. The synthesized Ag-TiO2 nanocomposite thin films with 5 at% Ag were found to exhibit highly enhanced photocatalytic activity for sun light driven photocatalytic degradation of methylene blue in water, indicating their potential application in water purification.

  12. Formation of silicon nanodots via ion beam sputtering of ultrathin gold thin film coatings on Si

    PubMed Central

    2011-01-01

    Ion beam sputtering of ultrathin film Au coatings used as a physical catalyst for self-organization of Si nanostructures has been achieved by tuning the incident particle energy. This approach holds promise as a scalable nanomanufacturing parallel processing alternative to candidate nanolithography techniques. Structures of 11- to 14-nm Si nanodots are formed with normal incidence low-energy Ar ions of 200 eV and fluences above 2 × 1017 cm-2. In situ surface characterization during ion irradiation elucidates early stage ion mixing migration mechanism for nanodot self-organization. In particular, the evolution from gold film islands to the formation of ion-induced metastable gold silicide followed by pure Si nanodots formed with no need for impurity seeding. PMID:21711934

  13. Optical Properties of TiO2 Films Deposited by Reactive Electron Beam Sputtering

    NASA Astrophysics Data System (ADS)

    Kruchinin, V. N.; Perevalov, T. V.; Atuchin, V. V.; Gritsenko, V. A.; Komonov, A. I.; Korolkov, I. V.; Pokrovsky, L. D.; Shih, Cheng Wei; Chin, Albert

    2017-10-01

    Titanium dioxide (anatase, a-TiO2) films have been prepared by electron beam sputtering of a TiO2 target in reactive atmosphere and their structural, microstructural, and optical properties were evaluated by reflection high- energy electron diffraction (RHEED) and x-ray diffraction (XRD) analyses, atomic force microscopy (AFM), and spectroscopic ellipsometry (SE). Different reflection models for determination of film optical parameters were tested and compared. The dispersive optical parameters were defined using the Tauc-Lorentz model by SE in the photon energy range of E = 1.12-4.96 eV. The films were transparent at E < 3 eV, but noticeable absorption was detected at E > 3 eV. The bandgap was estimated at the level of E g ≈ 3.44 eV.

  14. Characterization of zirconia- and niobia-silica mixture coatings produced by ion-beam sputtering

    SciTech Connect

    Melninkaitis, Andrius; Tolenis, Tomas; Mazule, Lina; Mirauskas, Julius; Sirutkaitis, Valdas; Mangote, Benoit; Fu Xinghai; Zerrad, Myriam; Gallais, Laurent; Commandre, Mireille; Kicas, Simonas; Drazdys, Ramutis

    2011-03-20

    ZrO{sub 2}-SiO{sub 2} and Nb{sub 2}O{sub 5}-SiO{sub 2} mixture coatings as well as those of pure zirconia (ZrO{sub 2}), niobia (Nb{sub 2}O{sub 5}), and silica (SiO{sub 2}) deposited by ion-beam sputtering were investigated. Refractive-index dispersions, bandgaps, and volumetric fractions of materials in mixed coatings were analyzed from spectrophotometric data. Optical scattering, surface roughness, nanostructure, and optical resistance were also studied. Zirconia-silica mixtures experience the transition from crystalline to amorphous phase by increasing the content of SiO{sub 2}. This also results in reduced surface roughness. All niobia and silica coatings and their mixtures were amorphous. The obtained laser-induced damage thresholds in the subpicosecond range also correlates with respect to the silica content in both zirconia- and niobia-silica mixtures.

  15. The influence of precursor films on CIGS films prepared by ion beam sputtering deposition

    NASA Astrophysics Data System (ADS)

    Zhao, Jun; Fan, Ping; Liang, Guangxing; Zheng, Zhuanghao; Zhang, Dongping; Chen, Chaoming

    2013-12-01

    The CuInGa(CIG) precursor films were grown by ion beam sputtering continuously CuGa/CuIn and CuIn/CuGa, and then selenized CIG to fabricate CIGS absorber films on molybdenum substrates . They were annealed in the same vacuum chamber and under the same temperature (500°C). The CIGS thin films were characterized with X-ray diffraction (XRD), Energy dispersive spectroscopy (EDS) and scanning electron microscopy (SEM) in order to study the microstructures, composition, surface morphology, electrical properties, respectively. The results showed that the CIGS thin films appeared smooth and compact with a sequence of Mo/CuGa/CuIn/Se, which were mainly of chalcopyrite structure. The CIGS thin films got the strongest diffraction peak intensity and were with good crystalline quality.

  16. Angular distribution of sputtered particles and surface morphology: the case of beryllium under a krypton beam at various incidences

    NASA Astrophysics Data System (ADS)

    Fournier, P.-G.; Nourtier, A.; Shulga, V. I.; Ait El Fqih, M.

    2005-04-01

    A beryllium target is bombarded with 5 keV krypton ions at incidence angles of 0° and 70°. The sputtered material is collected on a Mylar cylindrical foil surrounding the target, the foil is cut into pieces and the deposit on them is measured by inductively coupled plasma optical emission spectroscopy (ICP-OES). Experiment is combined with simulations using the computer code OKSANA. The method supplies accurate angular distributions of sputtered particles. The surface morphology is observed by scanning electron micrography. Depending on the incidence angle, sputtering forms craters and rippled areas or deep grooves. The resulting differences between simulations and experiment are explained qualitatively.

  17. Characterization of HfO2-SiO2 rugate multilayers deposited by ion beam sputtering

    NASA Astrophysics Data System (ADS)

    Rauhut, R.; Nehls, K.; Mechold, L.

    2014-10-01

    Ion beam sputtering (IBS) is a deposition technique being well known for resulting in very dense and damage resistant coatings due to high kinetic energies of the sputtered atoms. While different layers are deposited homogeneously, abrupt interfaces between the materials are the most susceptible part of the stack. Therefore we aim for an improvement of the laser damage threshold by sputtering material mixtures. Using a target with high- and low-index material next to each other, arbitrary refractive indices can be realized by adjusting the target axis. Our material system of choice is HfO2- SiO2, already yielding good results with non-rugate coatings. A comparison in terms of laser damage threshold between these designs and varying refractive index coatings will be shown.

  18. Ion-beam sputtered amorphous silicon films for cryogenic precision measurement systems

    NASA Astrophysics Data System (ADS)

    Murray, Peter G.; Martin, Iain W.; Craig, Kieran; Hough, James; Robie, Raymond; Rowan, Sheila; Abernathy, Matt R.; Pershing, Teal; Penn, Steven

    2015-09-01

    Thermal noise resulting from the mechanical loss of multilayer dielectric coatings is expected to impose a limit to the sensitivities of precision measurement systems used in fundamental and applied science. In the case of gravitational wave astronomy, future interferometric gravitational wave detectors are likely to operate at cryogenic temperatures to reduce such thermal noise and ameliorate thermal loading effects, with the desirable thermomechanical properties of silicon making it an attractive mirror substrate choice for this purpose. For use in such a precision instrument, appropriate coatings of low thermal noise are essential. Amorphous silicon (a -Si ) deposited by e-beam and other techniques has been shown to have low mechanical loss. However, to date, the levels of mechanical and optical loss for a -Si when deposited by ion-beam sputtering (the technique required to produce amorphous mirrors of the specification for gravitational wave detector mirrors) are unknown. In this paper results from measurements of the mechanical loss of a series of IBS a -Si films are presented which show that reductions are possible in coating thermal noise of a factor of 1.5 at 120 K and 2.1 at 20 K over the current best IBS coatings (alternating stacks of silica and titania-doped tantala), with further reductions feasible under appropriate heat treatments.

  19. Obtaining and doping of InAs-QD/GaAs(001) nanostructures by ion beam sputtering

    PubMed Central

    Pashchenko, Alexander S; Lunin, Leonid S; Zhivotova, Elena N; Erimeev, Georgy A; Lunina, Marina L

    2017-01-01

    The features of InAs quantum dots obtained on GaAs(001) single-crystal substrates by ion-beam sputtering were investigated. It has been shown that in the range of ion energies of 150 to 200 eV at a temperature of 500 °C and a beam current of 120 µA InAs quantum dots with average dimensions below 15 nm and a surface density of 1011 cm−2 are formed. The technique of controlled doping of InAs/GaAs nanostructures using a SnTe solid-state source was proposed. It has been established that a maximum donor concentration of 8.7·1018 cm−3 in the GaAs spacer layer is reached at an evaporation temperature of 415 °С. At the same time, impurity accumulation in the growth direction was observed. We have shown that increasing the impurity doping of the GaAs barrier layer increases the intensity of photoluminescence peaks of the ground state and the first excited state of the InAs quantum dots. PMID:28144560

  20. Obtaining and doping of InAs-QD/GaAs(001) nanostructures by ion beam sputtering.

    PubMed

    Chebotarev, Sergei N; Pashchenko, Alexander S; Lunin, Leonid S; Zhivotova, Elena N; Erimeev, Georgy A; Lunina, Marina L

    2017-01-01

    The features of InAs quantum dots obtained on GaAs(001) single-crystal substrates by ion-beam sputtering were investigated. It has been shown that in the range of ion energies of 150 to 200 eV at a temperature of 500 °C and a beam current of 120 µA InAs quantum dots with average dimensions below 15 nm and a surface density of 10(11) cm(-2) are formed. The technique of controlled doping of InAs/GaAs nanostructures using a SnTe solid-state source was proposed. It has been established that a maximum donor concentration of 8.7·10(18) cm(-3) in the GaAs spacer layer is reached at an evaporation temperature of 415 °С. At the same time, impurity accumulation in the growth direction was observed. We have shown that increasing the impurity doping of the GaAs barrier layer increases the intensity of photoluminescence peaks of the ground state and the first excited state of the InAs quantum dots.

  1. Fluoropolymer Films Deposited by Argon Ion-Beam Sputtering of Polytetrafluoroethylene

    NASA Technical Reports Server (NTRS)

    Golub, Morton A.; Banks, Bruce A.; Kliss, Mark (Technical Monitor)

    1998-01-01

    The FT-IR, XPS and UV spectra of fluoropolymer films (SPTFE-I) deposited by argon ion-beam sputtering of polytetrafluoroethylene (PTFE) were obtained and compared with prior corresponding spectra of fluoropolymer films (SPTFE-P) deposited by argon rf plasma sputtering of PTFE. Although the F/C ratios for SPTFE-I and -P (1.63 and 1.51) were similar, their structures were quite different in that there was a much higher concentration of CF2 groups in SPTFE-I than in SPTFE-P, ca. 61 and 33% of the total carbon contents, respectively. The FT-IR spectra reflect that difference, that for SPTFE-I showing a distinct doublet at 1210 and 1150 per centimeter while that for SPTFE-P presents a broad, featureless band at ca. 1250 per centimeter. The absorbance of the 1210-per centimeter band in SPTFE-I was proportional to the thickness of the film, in the range of 50-400 nanometers. The SPTFE-I was more transparent in the UV than SPTFE-P at comparable thickness. The mechanism for SPTFE-I formation likely involves "chopping off" of oligomeric segments of PTFE as an accompaniment to "plasma" polymerization of TFE monomer or other fluorocarbon fragments generated in situ from PTFE on impact with energetic Ar ions. Data are presented for SPTFE-I deposits and the associated Ar(+) bombarded PTFE targets where a fresh target was used for each run or a single target was used for a sequence of runs.

  2. The Growth Mechanism of Silicon Nanodots Synthesized by Sputtering Method

    SciTech Connect

    Sakrani, Samsudi; Idrees, Fatima Aldaw; Othaman, Zulkafli; Ismail, Abd. Khamim

    2011-05-25

    Silicon quantum dots have been grown on sapphire substrate using a self-assembly method of physical vapour deposition. The samples were fabricated at low sputtering rate and varying experimental conditions. Apparently, the onset of nucleation took place during the first 5 minutes of deposition, followed by a further growth of stable islands so-called nanodots, with the measured radii comparable to the predicted values. Other measurement results confirmed the existence of these dots, including the bandgap energy {approx}1.80 eV from PL and a 5% at. silicon from EDX. The nucleation parameters were predicted as follows: Free energy change per unit volume {Delta}G{sub v{approx}}-2.4x10{sup 5} Jmol{sup -1}; Surface energies per unit area, {gamma}{sub LN} = 1.48 Jm{sup -2}, {gamma}{sub NS} = 21.6-88.3 Jcm{sup -2} and {gamma}{sub LS} 0.82x10{sup -2} Jm{sup -2}; Critical energies {Delta}G* = 6.83x10{sup -16}-3.68x10{sup -14} J; Critical radii r* = 20-72 nm. This experimental evidence strongly support the early stage growth model of silicon quantum dot deposited on corning glass substrate.

  3. Room-Temperature Preparation of High-Transparency Low-Resistivity ITO Films by Ion Beam Sputtering

    NASA Astrophysics Data System (ADS)

    Shen, Jung-Hsiung; Yeh, Sung-Wei; Gan, Dershin; Yang, Koho; Huang, Hsing-Lu; Mao, Shih-Wei

    2010-10-01

    Low-temperature preparation of transparent conducting electrodes is essential for flexible optoelectronic devices. Tin-doped In2O3 films with high transparency and low electrical resistance were prepared at room temperature using a radiofrequency ion beam sputtering system. Specimens with a low sheet resistivity of 10-4 Ω cm and a high visible-light transmittance of 85% to 90% were obtained. Hall measurements were used to determine mobility and carrier concentration, and the effects on resistivity are discussed.

  4. Synthesis of Large-Sized Single-Crystal Hexagonal Boron Nitride Domains on Nickel Foils by Ion Beam Sputtering Deposition.

    PubMed

    Wang, Haolin; Zhang, Xingwang; Liu, Heng; Yin, Zhigang; Meng, Junhua; Xia, Jing; Meng, Xiang-Min; Wu, Jinliang; You, Jingbi

    2015-12-22

    Large-sized single-crystal h-BN domains with a lateral size up to 100 μm are synthesized on Ni foils by ion-beam sputtering deposition. The nucleation density of h-BN is dramatically decreased by reducing the concentrations of both active sites and species on the Ni surface through a brief in situ pretreatment of the substrate and optimization of the growth parameters, enabling the growth of large-sized domains.

  5. Symmetry of surface nanopatterns induced by ion-beam sputtering: Role of anisotropic surface diffusion

    NASA Astrophysics Data System (ADS)

    Renedo, Javier; Cuerno, Rodolfo; Castro, Mario; Muñoz-García, Javier

    2016-04-01

    Ion-beam sputtering (IBS) is a cost-effective technique able to produce ordered nanopatterns on the surfaces of different materials. To date, most theoretical studies of this process have focused on systems which become amorphous under irradiation, e.g., semiconductors at room temperature. Thus, in spite of the large amount of experimental work on metals, or more recently on semiconductors at high temperatures, such experimental contexts have received relatively little theoretical attention. These systems are characterized by transport mechanisms, e.g., surface diffusion, which are anisotropic as a reflection of the crystalline structure not being overruled by the irradiation. Here, we generalize a previous continuum theory of IBS at normal incidence, in order to account for anisotropic surface diffusion. We explore systematically our generalized model in order to understand the role of anisotropy in the space-ordering properties of the resulting patterns. In particular, we derive a height equation which predicts morphological transitions among hexagonal and rectangular patterns as a function of system parameters and employ an angular correlation function to assess these pattern symmetries. By suitably choosing experimental conditions, it is found that one might be able to experimentally control the type of order displayed by the patterns produced.

  6. Growth and Characterization of CIS Thin Films Prepared by Ion Beam Sputtering Deposition

    NASA Astrophysics Data System (ADS)

    Fan, Ping; Liang, Guang-Xing; Zheng, Zhuang-Hao; Cai, Xing-Min; Zhang, Dong-Ping

    2010-04-01

    Copper indium diselenide (CuInSe2) thin films were prepared by ion beam sputtering Cu, In and Se targets continuously on BK7 glass substrates and the three-layer film was then annealed in the same vacuum chamber. X-ray diffraction shows that the CuInSe2 thin films have a single chalcopyrite structure with preferential (112) orientation. Scanning electron microscopy reveals that the CIS thin films consist of uniform and densely packed grain clusters. Energy dispersive x-ray spectroscopy demonstrates that the elemental composition of CIS films approaches the stochiometric composition ratios of 1:1:2. Raman measurement shows that the main peak is at about 174 cm-1 and this peak is identified as the A1 vibrational mode from chalcopyrite ordered CuInSe2. Optical transmission and absorption spectroscopy measurement reveal an energy band gap of about 1.05eV and an absorption coefficient of 105 cm-1. The film resistivity is about 0.01 Ωcm.

  7. The Electric, Magnetic, and Optical Characterization of Permalloy Oxide Grown by Dual-Ion Beam Sputtering

    NASA Astrophysics Data System (ADS)

    Compton, Maclyn; Leblanc, Elizabeth; Geerts, Wilhelmus; Simpson, Nelson; Robinson, Michael

    2014-03-01

    Permalloy (Ni80Fe20) is a commonly used soft magnetic material in magnetic reading heads. Its magnetic properties do not depend on stress, a parameter difficult to control in thin film devices. Permalloy Oxide (PyO) on the other hand, has a high resistivity (>4 .103 Ω cm), is anti-ferromagnetic and has recently been shown to strongly enhance the performance of lateral spin valve devices. Historically, the oxidation of permalloy has been seen as a defect that should be avoided by appropriate encapsulation and very little is known on its electric and optical properties. We deposited thin PyO films by Dual Ion Beam Sputtering (DIBS) at room temperature on various substrates. Van der Pauw and Hall measurements were carried out from 77K to 400K and at magnetic fields up to 9T in order to determine its electronic bandgap, resistivity, free carrier concentration, and its mobility. The dielectric properties and defects were studied using a CV-setup and an impedance analyzer. Magnetic measurements were conducted on a Quantum Design PPMS VSM to determine the state of oxidation. Optical properties were measured by a M2000 Woollam variable angle spectroscopic ellipsometer. These properties were used to determine film thickness, bandgap and the optical constants of PyO. The authors would like to thank Research Corporation for financial support.

  8. Laser damage resistance of hafnia thin films deposited by electron beam deposition, reactive low voltage ion plating, and dual ion beam sputtering

    SciTech Connect

    Gallais, Laurent; Capoulade, Jeremie; Natoli, Jean-Yves; Commandre, Mireille; Cathelinaud, Michel; Koc, Cian; Lequime, Michel

    2008-05-01

    A comparative study is made of the laser damage resistance of hafnia coatings deposited on fused silica substrates with different technologies: electron beam deposition (from Hf or HfO2 starting material), reactive low voltage ion plating, and dual ion beam sputtering.The laser damage thresholds of these coatings are determined at 1064 and 355 nm using a nanosecond pulsed YAG laser and a one-on-one test procedure. The results are associated with a complete characterization of the samples: refractive index n measured by spectrophotometry, extinction coefficient k measured by photothermal deflection, and roughness measured by atomic force microscopy.

  9. A method for sputtering with low frequency alternating current

    SciTech Connect

    Timberlake, J.R.

    1993-12-31

    Low frequency alternating current sputtering is provided by connecting a low frequency alternating current to a high voltage transformer having outer taps and a center tap for stepping up the voltage of the alternating currentThe center tap of the tmsformer is connected to a vacuum vessel containing argon or helium gas. Target electrodes, in close proximity to each other, and containing material with which the substrates will be coated, are connected to the outer taps of the ftwsformer. With an applied potential, the gas will ionize and sputtering from the target electrodes onto the substrate will then result. The target electrodes can be copper or boron, and the substrate can be stainless steel, aluminum, or titanium. Copper coatings produced are used in place of nickel and/or copper striking.

  10. Method for sputtering with low frequency alternating current

    DOEpatents

    Timberlake, John R.

    1996-01-01

    Low frequency alternating current sputtering is provided by connecting a low frequency alternating current source to a high voltage transformer having outer taps and a center tap for stepping up the voltage of the alternating current. The center tap of the transformer is connected to a vacuum vessel containing argon or helium gas. Target electrodes, in close proximity to each other, and containing material with which the substrates will be coated, are connected to the outer taps of the transformer. With an applied potential, the gas will ionize and sputtering from the target electrodes onto the substrate will then result. The target electrodes can be copper or boron, and the substrate can be stainless steel, aluminum, or titanium. Copper coatings produced are used in place of nickel and/or copper striking.

  11. Method for sputtering with low frequency alternating current

    DOEpatents

    Timberlake, J.R.

    1996-04-30

    Low frequency alternating current sputtering is provided by connecting a low frequency alternating current source to a high voltage transformer having outer taps and a center tap for stepping up the voltage of the alternating current. The center tap of the transformer is connected to a vacuum vessel containing argon or helium gas. Target electrodes, in close proximity to each other, and containing material with which the substrates will be coated, are connected to the outer taps of the transformer. With an applied potential, the gas will ionize and sputtering from the target electrodes onto the substrate will then result. The target electrodes can be copper or boron, and the substrate can be stainless steel, aluminum, or titanium. Copper coatings produced are used in place of nickel and/or copper striking. 6 figs.

  12. Structural and corrosion characterization of hydroxyapatite/zirconium nitride-coated AZ91 magnesium alloy by ion beam sputtering

    NASA Astrophysics Data System (ADS)

    Kiahosseini, Seyed Rahim; Afshar, Abdollah; Mojtahedzadeh Larijani, Majid; Yousefpour, Mardali

    2017-04-01

    The adhesion of hydroxyapatite (HA) as a coating for the AZ91 magnesium alloy substrate can be improved by using the sputtering method and an intermediate layer, such as ZrN. In this study, HA coatings were applied on ZrN intermediate layers at a temperature of 300 °C for 180, 240, 300, 360, and 420 min by ion beam sputtering. A profilometer device was used to study the HA coating thickness, which changed from 2 μm for the 180-min deposition to 4.7 μm for 420-min deposition. The grazing incidence X-ray diffraction analysis method and the Williamson-Hall analysis were used for structural investigation. As the deposition time increased, the crystalline size increased from 50 nm to 690 nm. However, given sufficient time for stress relief on the coating structure, the lattice strain values were close to zero. Energy-dispersive X-ray spectroscopy results showed that the Ca/P ratio ranged from 1.73 to 1.81. The external indentation method was used to evaluate the coating adhesion to the substrate. The slope of curve for applied force changes versus the radius of cracks in the coating (dP/dr) varied in the range of 0.2-0.07 by the deposition time, indicating that the adhesion increased with the increase in coating thickness. The potentiodynamic polarization technique was used to study the corrosion behavior. With increasing deposition time, the corrosion potential of samples did not show a significant change, and the corrosion potential of all samples (coated and uncoated substrates) was more positive than approximately 55 mV. When the deposition time increased to 360 min, the corrosion current density decreased from 5.5 μA/cm2 to 0.33 μA/cm2. After 420 min of deposition, the current density increased to 8.2 μA/cm2. Scanning electron microscopy images of the HA surface layer after 420 min clearly showed cracks on the coating surface, which led to the increase in corrosion current density.

  13. Ion beam and plasma methods of producing diamondlike carbon films

    NASA Technical Reports Server (NTRS)

    Swec, Diane M.; Mirtich, Michael J.; Banks, Bruce A.

    1988-01-01

    A variety of plasma and ion beam techniques was employed to generate diamondlike carbon films. These methods included the use of RF sputtering, dc glow discharge, vacuum arc, plasma gun, ion beam sputtering, and both single and dual ion beam deposition. Since films were generated using a wide variety of techniques, the physico-chemical properties of these films varied considerably. In general, these films had characteristics that were desirable in a number of applications. For example, the films generated using both single and dual ion beam systems were evaluated for applications including power electronics as insulated gates and protective coatings on transmitting windows. These films were impervious to reagents which dissolve graphitic and polymeric carbon structures. Nuclear reaction and combustion analysis indicated hydrogen to carbon ratios to be 1.00, which allowed the films to have good transmittance not only in the infrared, but also in the visible. Other evaluated properties of these films include band gap, resistivity, adherence, density, microhardness, and intrinsic stress. The results of these studies and those of the other techniques for depositing diamondlike carbon films are presented.

  14. Molecular depth profiling of organic photovoltaic heterojunction layers by ToF-SIMS: comparative evaluation of three sputtering beams.

    PubMed

    Mouhib, T; Poleunis, C; Wehbe, N; Michels, J J; Galagan, Y; Houssiau, L; Bertrand, P; Delcorte, A

    2013-11-21

    With the recent developments in secondary ion mass spectrometry (SIMS), it is now possible to obtain molecular depth profiles and 3D molecular images of organic thin films, i.e. SIMS depth profiles where the molecular information of the mass spectrum is retained through the sputtering of the sample. Several approaches have been proposed for "damageless" profiling, including the sputtering with SF5(+) and C60(+) clusters, low energy Cs(+) ions and, more recently, large noble gas clusters (Ar500-5000(+)). In this article, we evaluate the merits of these different approaches for the in depth analysis of organic photovoltaic heterojunctions involving poly(3-hexylthiophene) (P3HT) as the electron donor and [6,6]-phenyl C61 butyric acid methyl ester (PCBM) as the acceptor. It is demonstrated that the use of 30 keV C60(3+) and 500 eV Cs(+) (500 eV per atom) leads to strong artifacts for layers in which the fullerene derivative PCBM is involved, related to crosslinking and topography development. In comparison, the profiles obtained using 10 keV Ar1700(+) (∼6 eV per atom) do not indicate any sign of artifacts and reveal fine compositional details in the blends. However, increasing the energy of the Ar cluster beam beyond that value leads to irreversible damage and failure of the molecular depth profiling. The profile qualities, apparent interface widths and sputtering yields are analyzed in detail. On the grounds of these experiments and recent molecular dynamics simulations, the discussion addresses the issues of damage and crater formation induced by the sputtering and the analysis ions in such radiation-sensitive materials, and their effects on the profile quality and the depth resolution. Solutions are proposed to optimize the depth resolution using either large Ar clusters or low energy cesium projectiles for sputtering and/or analysis.

  15. NiO exchange bias layers grown by direct ion beam sputtering of a nickel oxide target

    SciTech Connect

    Michel, R.P.; Chaiken, A.; Johnson, L.E.; Kim, Y.K.

    1996-03-01

    A new process for fabricating NiO exchange bias layers has been developed. The process involves the direct ion beam sputtering (IBS) of a NiO target. The process is simpler than other deposition techniques for producing NiO buffer layers, and facilitates the deposition of an entire spin-valve layered structure using IBS without breaking vacuum. The layer thickness and temperature dependence of the exchange field for NiO/NiFe films produced using IBS are presented and are similar to those reported for similar films deposited using reactive magnetron sputtering. The magnetic properties of highly textured exchange couples deposited on single crystal substrates are compared to those of simultaneously deposited polycrystalline films, and both show comparable exchange fields. These results are compared to current theories describing the exchange coupling at the NiO/NiFe interface.

  16. Synthesis of atomic layers of hybridized h-BNC by depositing h-BN on graphene via ion beam sputtering

    NASA Astrophysics Data System (ADS)

    Meng, J. H.; Zhang, X. W.; Liu, H.; Yin, Z. G.; Wang, D. G.; Wang, Y.; You, J. B.; Wu, J. L.

    2016-10-01

    We report the deposition of hexagonal boron nitride (h-BN) on graphene by ion beam sputtering deposition. Both graphene domains and films synthesized by chemical vapor deposition were used as substrates. In the case of graphene domains, it was found that the h-BN domains were preferentially grown on the baked Cu surface instead of graphene due to the highly catalytic activity of Cu. On the other hand, the higher ejection energy of sputtered particles leads to the mixing of boron/nitrogen atoms and carbon atoms. Consequently, the h-BNC films consisting of the hybrid atomic layers of h-BN and graphene domains were formed when the graphene films were used as substrates. This work provides a promising and accessible route for the synthesis of hybridized h-BNC material.

  17. Influence of metal co-deposition on silicon nanodot patterning dynamics during ion-beam sputtering

    NASA Astrophysics Data System (ADS)

    Gago, R.; Redondo-Cubero, A.; Palomares, F. J.; Vázquez, L.

    2014-10-01

    We address the impact of metal co-deposition in the nanodot patterning dynamics of Si(100) surfaces under normal-incidence 1 keV Ar+ ion-beam sputtering (IBS). In particular, the effect of both the metal nature (Fe or Mo) and flux has been studied. Morphological and compositional evolution were followed by atomic force microscopy (AFM) and Rutherford backscattering spectrometry, respectively. For the same type of impurity, the dynamics is faster for a higher co-deposition flux, which also drives to larger asymptotic roughness and wavelength. Mo co-deposition yields rougher surfaces for a lower metal coverage than Fe and, remarkably, higher ordered patterns. X-ray photoelectron spectroscopy reveals the formation of silicide bonds even before pattern onset, stressing the relevant role of the affinity of the co-deposited metals for silicon. Further, current-sensing AFM performed at the initial and asymptotic stages indicates that the nanodot structures are metal-rich, resulting in coupled compositional and morphological patterns. These results are discussed in terms of phase segregation, morphology-driven local flux variations of impurities and silicide formation. This analysis reveals that the underlying (concurrent) mechanisms of pattern formation are complex since many processes can come into play with a different relative weight depending on the specific patterning conditions. From a practical point of view, it is shown that, by proper selection of the process parameters, IBS with metal co-deposition can be used to tune the dynamics and pattern properties and, interestingly, to produce highly ordered arrays.

  18. Angular Distributions of Sputtered Atoms from Semiconductor Targets at Grazing Ion Beam Incidence Angles

    SciTech Connect

    Sekowski, M.; Burenkov, A.; Martinez-Limia, A.; Hernandez-Mangas, J.; Ryssel, H.

    2008-11-03

    Angular distributions of ion sputtered germanium and silicon atoms are investigated within this work. Experiments are performed for the case of grazing ion incidence angles, where the resulting angular distributions are asymmetrical with respect to the polar angle of the sputtered atoms. The performed experiments are compared to Monte-Carlo simulations from different programs. We show here an improved model for the angular distribution, which has an additional dependence of the ion incidence angle.

  19. Laser beam alignment apparatus and method

    DOEpatents

    Gruhn, Charles R.; Hammond, Robert B.

    1981-01-01

    The disclosure relates to an apparatus and method for laser beam alignment. Thermoelectric properties of a disc in a laser beam path are used to provide an indication of beam alignment and/or automatic laser alignment.

  20. Laser beam alignment apparatus and method

    DOEpatents

    Gruhn, C.R.; Hammond, R.B.

    The disclosure related to an apparatus and method for laser beam alignment. Thermoelectric properties of a disc in a laser beam path are used to provide an indication of beam alignment and/or automatic laser alignment.

  1. Investigation of ion-beam machining methods for replicated x-ray optics

    NASA Technical Reports Server (NTRS)

    Drueding, Thomas W.

    1996-01-01

    The final figuring step in the fabrication of an optical component involves imparting a specified contour onto the surface. This can be expensive and time consuming step. The recent development of ion beam figuring provides a method for performing the figuring process with advantages over standard mechanical methods. Ion figuring has proven effective in figuring large optical components. The process of ion beam figuring removes material by transferring kinetic energy from impinging neutral particles. The process utilizes a Kaufman type ion source, where a plasma is generated in a discharge chamber by controlled electric potentials. Charged grids extract and accelerate ions from the chamber. The accelerated ions form a directional beam. A neutralizer outside the accelerator grids supplies electrons to the positive ion beam. It is necessary to neutralize the beam to prevent charging workpieces and to avoid bending the beam with extraneous electro-magnetic fields. When the directed beam strikes the workpiece, material sputters in a predicable manner. The amount and distribution of material sputtered is a function of the energy of the beam, material of the component, distance from the workpiece, and angle of incidence of the beam. The figuring method described here assumes a constant beam removal, so that the process can be represented by a convolution operation. A fixed beam energy maintains a constant sputtering rate. This temporally and spatially stable beam is held perpendicular to the workpiece at a fixed distance. For non-constant removal, corrections would be required to model the process as a convolution operation. Specific figures (contours) are achieved by rastering the beam over the workpiece at varying velocities. A unique deconvolution is performed, using series-derivative solution developed for the system, to determine these velocities.

  2. Large O2 Cluster Ions as Sputter Beam for ToF-SIMS Depth Profiling of Alkali Metals in Thin SiO2 Films.

    PubMed

    Holzer, Sabine; Krivec, Stefan; Kayser, Sven; Zakel, Julia; Hutter, Herbert

    2017-02-21

    A sputter beam, consisting of large O2 clusters, was used to record depth profiles of alkali metal ions (Me(+)) within thin SiO2 layers. The O2 gas cluster ion beam (O2-GCIB) exhibits an erosion rate comparable to the frequently used O2(+) projectiles. However, because of its high sputter yield the necessary beam current is considerably lower (factor 50), resulting in a decreased amount of excess charges at the SiO2 surface. Hence, a reduced electric field is obtained within the remaining dielectric layer. This drastically mitigates the Me(+) migration artifact, commonly observed in depth profiles of various dielectric materials, if analyzed by time-of-flight secondary ion mass spectrometry (ToF-SIMS) in dual beam mode. It is shown, that the application of O2-GCIB results in a negligible residual ion migration for Na(+) and K(+). This enables artifact-free depth profiling with high sensitivity and low operational effort. Furthermore, insight into the migration behavior of Me(+) during O2(+) sputtering is given by switching the sputter beam from O2(+) to O2 clusters and vice versa. K(+) is found to be transported through the SiO2 layer only within the proceeding sputter front. For Na(+) a steadily increasing fraction is observed, which migrates through the unaffected SiO2 layer toward the adjacent Si/SiO2 interface.

  3. Sputtering erosion in ion and plasma thrusters

    NASA Technical Reports Server (NTRS)

    Ray, Pradosh K.

    1995-01-01

    An experimental set-up to measure low-energy (below 1 keV) sputtering of materials is described. The materials to be bombarded represent ion thruster components as well as insulators used in the stationary plasma thruster. The sputtering takes place in a 9 inch diameter spherical vacuum chamber. Ions of argon, krypton and xenon are used to bombard the target materials. The sputtered neutral atoms are detected by a secondary neutral mass spectrometer (SNMS). Samples of copper, nickel, aluminum, silver and molybdenum are being sputtered initially to calibrate the spectrometer. The base pressure of the chamber is approximately 2 x 10(exp -9) Torr. the primary ion beam is generated by an ion gun which is capable of delivering ion currents in the range of 20 to 500 nA. The ion beam can be focused to a size approximately 1 mm in diameter. The mass spectrometer is positioned 10 mm from the target and at 90 deg angle to the primary ion beam direction. The ion beam impinges on the target at 45 deg. For sputtering of insulators, charge neutralization is performed by flooding the sample with electrons generated from an electron gun. Preliminary sputtering results, methods of calculating the instrument response function of the spectrometer and the relative sensitivity factors of the sputtered elements will be discussed.

  4. Sputtering erosion in ion and plasma thrusters

    NASA Technical Reports Server (NTRS)

    Ray, Pradosh K.

    1995-01-01

    An experimental set-up to measure low-energy (below 1 keV) sputtering of materials is described. The materials to be bombarded represent ion thruster components as well as insulators used in the stationary plasma thruster. The sputtering takes place in a 9 inch diameter spherical vacuum chamber. Ions of argon, krypton and xenon are used to bombard the target materials. The sputtered neutral atoms are detected by a secondary neutral mass spectrometer (SNMS). Samples of copper, nickel, aluminum, silver and molybdenum are being sputtered initially to calibrate the spectrometer. The base pressure of the chamber is approximately 2 x 10(exp -9) Torr. the primary ion beam is generated by an ion gun which is capable of delivering ion currents in the range of 20 to 500 nA. The ion beam can be focused to a size approximately 1 mm in diameter. The mass spectrometer is positioned 10 mm from the target and at 90 deg angle to the primary ion beam direction. The ion beam impinges on the target at 45 deg. For sputtering of insulators, charge neutralization is performed by flooding the sample with electrons generated from an electron gun. Preliminary sputtering results, methods of calculating the instrument response function of the spectrometer and the relative sensitivity factors of the sputtered elements will be discussed.

  5. Oxygen vacancy mediated enhanced photo-absorption from ZnO(0001) nanostructures fabricated by atom beam sputtering

    SciTech Connect

    Solanki, Vanaraj; Joshi, Shalik R.; Mishra, Indrani; Varma, Shikha; Kabiraj, D.; Avasthi, D. K.; Mishra, N. C.

    2016-08-07

    The nanoscale patterns created on the ZnO(0001) surfaces during atom beam irradiation have been investigated here for their photo absorption response. Preferential sputtering, during irradiation, promotes Zn-rich zones that serve as the nucleation centers for the spontaneous creation of nanostructures. Nanostructured surfaces with bigger (78 nm) nanodots, displaying hexagonal ordering and long ranged periodic behavior, show higher photo absorption and a ∼0.09 eV reduced bandgap. These nanostructures also demonstrate higher concentration of oxygen vacancies which are crucial for these results. The enhanced photo-response, as observed here, has been achieved in the absence of any dopant elements.

  6. Reticle blanks for extreme ultraviolet lithography: Ion beam sputter deposition of low defect density Mo/Si multilayers

    SciTech Connect

    Vernon, S.P.; Kania, D.R.; Kearney, P.A.; Levesque, R.A.; Hayes, A.V.; Druz, B.; Osten, E.; Rajan, R.; Hedge, H.

    1996-06-24

    We report on growth of low defect density Mo/Si multilayer (ML) coatings. The coatings were grown in a deposition system designed for EUVL reticle blank fabrication. Complete, 81 layer, high reflectance Mo/Si ML coatings were deposited on 150 mm dia (100) oriented Si wafer substrates using ion beam sputter deposition. Added defects, measured by optical scattering, correspond to defect densities of 2x10{sup -2}/cm{sup 2}. This represents a reduction in defect density of Mo/Si ML coatings by a factor of 10{sup 5}.

  7. Transparent oxygen impermeable AlO x thin films on polycarbonate deposited by reactive ion beam sputtering

    NASA Astrophysics Data System (ADS)

    Seong, Jin-Wook; Kim, Sang-Mun; Choi, Daiwon; Yoon, K. H.

    2005-08-01

    The AlO x thin films were deposited on the polycarbonate by reactive ion beam sputtering (RIBS) at different oxygen partial pressures where the AlO x thin film with O/Al ratio of 1.5 was formed when oxygen partial pressure increased from 4 × 10 -5 to 2 × 10 -4 Torr. As a result, oxygen transmission rate (OTR) of the barrier significantly decreased from 24 cm 3/m 2 day to around 2 cm 3/m 2 day with increase in oxygen partial pressure. Optical transmittances of the films were in the 86-88% range at 550 nm versus 89% for the pure polycarbonate film.

  8. Towards an electro-magnetic field separation of deposited material implemented in an ion beam sputter process

    SciTech Connect

    Malobabic, Sina; Jupe, Marco; Ristau, Detlev

    2013-06-03

    Nowadays, Ion Beam Sputter (IBS) processes are very well optimized on an empirical basis. To achieve further progresses, a modification of the IBS process by guiding the coating material using an axial magnetic field and an additional electrical field has been studied. The electro-magnetic (EM) field leads to a significant change in plasma properties and deposition rate distributions, whereas an increase in deposition rate along the centerline of the axial EM field around 150% was observed. These fundamental studies on the prototype are the basis for the development of an applicable and workable design of a separation device.

  9. Thin copper oxide films prepared by ion beam sputtering with subsequent thermal oxidation: Application in chemiresistors

    NASA Astrophysics Data System (ADS)

    Horak, P.; Bejsovec, V.; Vacik, J.; Lavrentiev, V.; Vrnata, M.; Kormunda, M.; Danis, S.

    2016-12-01

    Copper oxide films were prepared by thermal oxidation of thin Cu films deposited on substrates by ion beam sputtering. The subsequent oxidation was achieved in the temperature range of 200 °C-600 °C with time of treatment from 1 to 7 h (with a 1-h step) in a furnace open to air. At temperatures 250 °C-600 °C, the dominant phase formed was CuO, while at 200 °C mainly the Cu2O phase was identified. However, the oxidation at 200 °C led to a more complicated composition - in the depth Cu2O phase was observed, though in the near-surface layer the CuO dominant phase was found with a significant presence of Cu(OH)2. A limited amount of Cu2O was also found in samples annealed at 600 °C. The sheet resistance RS of the as-deposited Cu sample was 2.22 Ω/□, after gradual annealing RS was measured in the range 2.64 MΩ/□-2.45 GΩ/□. The highest RS values were obtained after annealing at 300 °C and 350 °C, respectively. Oxygen depth distribution was studied using the 16O(α,α) nuclear reaction with the resonance at energy 3032 keV. It was confirmed that the higher oxidation degree of copper is located in the near-surface region. Preliminary tests of the copper oxide films as an active layer of a chemiresistor were also performed. Hydrogen and methanol vapours, with a concentration of 1000 ppm, were detected by the sensor at an operating temperature of 300 °C and 350 °C, respectively. The response of the sensors, pointed at the p-type conductivity, was improved by the addition of thin Pd or Au catalytic films to the oxidic film surface. Pd-covered films showed an increased response to hydrogen at 300 °C, while Au-covered films were more sensitive to methanol vapours at 350 °C.

  10. Method and apparatus for sputtering with a plasma lens

    DOEpatents

    Anders, Andre

    2016-09-27

    A plasma lens for enhancing the quality and rate of sputter deposition onto a substrate is described herein. The plasma lens serves to focus positively charged ions onto the substrate while deflecting negatively charged ions, while at the same time due to the line of sight positioning of the lens, allowing for free passage of neutrals from the target to the substrate. The lens itself is formed of a wound coil of multiple turns, inside of which are deposed spaced lens electrodes which are electrically paired to impress an E field overtop the B field generated by the coil, the potential applied to the electrodes increasing from end to end towards the center of the lens, where the applied voltage is set to a high potential at the center electrodes as to produce a potential minimum on the axis of the lens.

  11. Sputtering of carbon using hydrogen ion beams with energies of 60-800 eV

    NASA Astrophysics Data System (ADS)

    Sidorov, Dmitry S.; Chkhalo, Nikolay I.; Mikhailenko, Mikhail S.; Pestov, Alexey E.; Polkovnikov, Vladimir N.

    2016-11-01

    This article presents the result of a study on the sputtering of carbon films by low-energy hydrogen ions. In particular, the etching rate and surface roughness were measured. The range of energies where the sputtering switches from pure chemical to a combination of chemical and physical mechanisms was determined. It is shown that Sigmund's theory for ion etching does not work well for fields of energy less than 150 eV and that it accurately describes the dependence of a sputtering coefficient on ion energy for energies greater than 300 eV. A strong smoothing effect for the surface of carbon film was also found. This result is interesting in itself and for its significance for the manufacture of super-smooth surfaces for X-ray applications.

  12. Low-Energy Sputtering Research

    NASA Technical Reports Server (NTRS)

    Ray, P. K.; Shutthanandan, V.

    1999-01-01

    An experimental study is described to measure low-energy (less than 600 eV) sputtering yields of molybdenum with xenon ions using Rutherford backscattering spectroscopy (RBS) and secondary neutral mass spectroscopy (SNMS). An ion gun was used to generate the ion beam. The ion current density at the target surface was approximately 30 (micro)A/sq cm. For RBS measurements, the sputtered material was collected on a thin aluminum strip which was mounted on a semi-circular collector plate. The target was bombarded with 200 and 500 eV xenon ions at normal incidence. The differential sputtering yields were measured using the RBS method with 1 MeV helium ions. The differential yields were fitted with a cosine fitting function and integrated with respect to the solid angle to provide the total sputtering yields. The sputtering yields obtained using the RBS method are in reasonable agreement with those measured by other researchers using different techniques. For the SNMS measurements, 150 to 600 eV xenon ions were used at 50deg angle of incidence. The SNMS spectra were converted to sputtering yields for perpendicular incidence by normalizing SNMS spectral data at 500 eV with the yield measured by Rutherford backscattering spectrometry. Sputtering yields as well as the shape of the yield-energy curve obtained in this manner are in reasonable agreement with those measured by other researchers using different techniques. Sputtering yields calculated by using two semi-spherical formulations agree reasonably well with measured data. The isotopic composition of secondary ions were measured by bombarding copper with xenon ions at energies ranging from 100 eV to 1.5 keV. The secondary ion flux was found to be enriched in heavy isotopes at low incident ion energies. The heavy isotope enrichment was observed to decrease with increasing impact energy. Beyond 700 eV, light isotopes were sputtered preferentially with the enrichment remaining nearly constant.

  13. Opto-structural studies of well-dispersed silicon nano-crystals grown by atom beam sputtering

    PubMed Central

    2012-01-01

    Synthesis and characterization of nano-crystalline silicon grown by atom beam sputtering technique are reported. Rapid thermal annealing of the deposited films is carried out in Ar + 5% H2 atmosphere for 5 min at different temperatures for precipitation of silicon nano-crystals. The samples are characterized for their optical and structural properties using various techniques. Structural studies are carried out by micro-Raman spectroscopy, Fourier transform infrared spectroscopy, transmission electron microscopy (TEM), high resolution transmission electron microscopy, and selected area electron diffraction. The optical properties are studied by photoluminescence and UV-vis absorption spectroscopy, and bandgaps are evaluated. The bandgaps are found to decrease after rapid thermal treatment. The micro-Raman studies show the formation of nano-crystalline silicon in as-deposited as well as annealed films. The shifting and broadening in Raman peak suggest formation of nano-phase in the samples. Results of micro-Raman, photoluminescence, and TEM studies suggest the presence of a bimodal crystallite size distribution for the films annealed at higher temperatures. The results show that atom beam sputtering is a suitable technique to synthesize nearly mono-dispersed silicon nano-crystals. The size of the nano-crystals may be controlled by varying annealing parameters. PMID:23031449

  14. Beam shuttering interferometer and method

    DOEpatents

    Deason, V.A.; Lassahn, G.D.

    1993-07-27

    A method and apparatus resulting in the simplification of phase shifting interferometry by eliminating the requirement to know the phase shift between interferograms or to keep the phase shift between interferograms constant. The present invention provides a simple, inexpensive means to shutter each independent beam of the interferometer in order to facilitate the data acquisition requirements for optical interferometry and phase shifting interferometry. By eliminating the requirement to know the phase shift between interferograms or to keep the phase shift constant, a simple, economical means and apparatus for performing the technique of phase shifting interferometry is provide which, by thermally expanding a fiber optical cable changes the optical path distance of one incident beam relative to another.

  15. Beam shuttering interferometer and method

    DOEpatents

    Deason, Vance A.; Lassahn, Gordon D.

    1993-01-01

    A method and apparatus resulting in the simplification of phase shifting interferometry by eliminating the requirement to know the phase shift between interferograms or to keep the phase shift between interferograms constant. The present invention provides a simple, inexpensive means to shutter each independent beam of the interferometer in order to facilitate the data acquisition requirements for optical interferometry and phase shifting interferometry. By eliminating the requirement to know the phase shift between interferograms or to keep the phase shift constant, a simple, economical means and apparatus for performing the technique of phase shifting interferometry is provide which, by thermally expanding a fiber optical cable changes the optical path distance of one incident beam relative to another.

  16. Broad, intense, quiescent beam of singly charged metal ions obtained by extraction from self-sputtering plasma far above the runaway threshold

    SciTech Connect

    Anders, Andre; Oks, Efim

    2009-05-19

    Dense metal plasmas obtained by self-sputtering far above the runway threshold are well suited to generate intense quiescent ion beams. The dilemma of high current density and charge state purity can be solved when using target materials of low surface binding energy by utilizing non-resonant exchange reactions before ion extraction. Space-charge-limited quiescent beams of Cu+, Zn+, and Bi+ with ~;;10 mA/cm2 have been obtained through multi-aperture gridded ion extraction up to 45 kV from self-sputtering plasmas.

  17. Method for splitting low power laser beams

    SciTech Connect

    Pierscionek, B.K. )

    1990-04-01

    A new method for producing parallel rays from a laser beam using a cylindrical lens and pinholes is presented. This method can produce a greater number of emergent rays than using a {ital beam} {ital splitter}.

  18. Improvement of electrical and optical properties of molybdenum oxide thin films by ultralow pressure sputtering method

    SciTech Connect

    Sook Oh, Myeong; Seob Yang, Bong; Ho Lee, Jong; Ha Oh, Seong; Soo Lee, Ung; Jang Kim, Yoon; Joon Kim, Hyeong; Soo Huh, Myung

    2012-05-15

    In this work, we investigated the structural, electrical and optical properties of molybdenum oxide thin films deposited by the reactive dc magnetron sputtering method. The molybdenum oxide films were prepared at sputtering pressures ranging from 6.7 x 10{sup -1} to 6.7 x 10{sup -2} Pa. In order to promote their electrical conductivity, all the deposited MoO{sub x} films were annealed in Ar ambient at 450 deg. C for 8 h. The resistivity of the MoO{sub x} films varied from 10{sup -4} to 10{sup -2}{Omega} cm depending on the O{sub 2} content in the sputtering ambient. The lowering of the resistivity of the MoO{sub 2} films was mainly attributed to the formation of a monoclinic MoO{sub 2} polycrystalline phase. As the sputtering pressure decreased, the content of monoclinic polycrystalline MoO{sub 2} phase increased, resulting in low resistivity films. The formation of the dominant MoO{sub 2} phase at lower sputtering pressures was attributed to the stress induced crystallization. The post-deposition annealed (PDA) MoO{sub x} film, deposited at an ultralow sputtering pressure (6.7 x 10{sup -2} Pa) and O{sub 2} content of 40%, had an atomic ratio of O to Mo {approx_equal} 2.85 and was highly transparent and conductive: the transmittance in the visible wavelength range of 400-500 nm was about 73% and the resistivity was 1.05 x 10{sup -3}{Omega} cm. This result is superior to those of MoO{sub x} films epitaxially grown by the pulse laser deposition method.

  19. Synthesis of Alumina Thin Films Using Reactive Magnetron Sputtering Method

    NASA Astrophysics Data System (ADS)

    Angarita, G.; Palacio, C.; Trujillo, M.; Arroyave, M.

    2017-06-01

    Alumina (Al2O3) thin films were deposited on Si (100) by Magnetron Sputtering in reactive conditions between an aluminium target and oxygen 99.99% pure. The plasma was formed employing Argon with an R.F power of 100 W, the dwelling time was 3 hours. 4 samples were produced with temperatures between 350 and 400 ºC in the substrate by using an oxygen flow of 2 and 8 sccm, the remaining parameters of the process were fixed. The coatings and substrates were characterized using Atomic Force Microscopy (AFM), Scanning Electron Microscopy (SEM), X-ray diffraction (XRD) and Energy Dispersive Spectroscopy (EDS) in order to compare their properties before and after deposition. The films thicknesses were between 47 and 70 nm. The results show that at high oxygen flow the alumina structure prevails in the coatings while at lower oxygen flow only aluminum is deposited in the coatings. It was shown that the temperature increases grain size and roughness while decreasing the thicknesses of the coatings.

  20. Sputtered pin amorphous silicon semi-conductor device and method therefor

    DOEpatents

    Moustakas, Theodore D.; Friedman, Robert A.

    1983-11-22

    A high efficiency amorphous silicon PIN semi-conductor device is constructed by the sequential sputtering of N, I and P layers of amorphous silicon and at least one semi-transparent ohmic electrode. A method of construction produces a PIN device, exhibiting enhanced physical integrity and facilitates ease of construction in a singular vacuum system and vacuum pump down procedure.

  1. Self-organised silicide nanodot patterning by medium-energy ion beam sputtering of Si(100): local correlation between the morphology and metal content

    NASA Astrophysics Data System (ADS)

    Redondo-Cubero, A.; Galiana, B.; Lorenz, K.; Palomares, FJ; Bahena, D.; Ballesteros, C.; Hernandez-Calderón, I.; Vázquez, L.

    2016-11-01

    We have produced self-organised silicide nanodot patterns by medium-energy ion beam sputtering (IBS) of silicon targets with a simultaneous and isotropic molybdenum supply. Atomic force microscopy (AFM) studies show that these patterns are qualitatively similar to those produced thus far at low ion energies. We have determined the relevance of the ion species on the pattern ordering and properties. For the higher ordered patterns produced by Xe+ ions, the pattern wavelength depends linearly on the ion energy. The dot nanostructures are silicide-rich as assessed by x-ray photoelectron spectroscopy (XPS) and emerge in height due to their lower sputtering yield, as observed by electron microscopy. Remarkably, a long wavelength corrugation is observed on the surface which is correlated with both the Mo content and the dot pattern properties. Thus, as assessed by electron microscopy, the protrusions are Mo-rich with higher and more spaced dots on their surface whereas the valleys are Mo-poor with smaller dots that are closer to each other. These findings indicate that there is a correlation between the local metal content of the surface and the nanodot pattern properties both at the nanodot and the large corrugation scales. These results contribute to advancing the understanding of this interesting nanofabrication method and aid in developing a comprehensive theory of nanodot pattern formation and evolution.

  2. Self-organised silicide nanodot patterning by medium-energy ion beam sputtering of Si(100): local correlation between the morphology and metal content.

    PubMed

    Redondo-Cubero, A; Galiana, B; Lorenz, K; Palomares, F J; Bahena, D; Ballesteros, C; Hernandez-Calderón, I; Vázquez, L

    2016-11-04

    We have produced self-organised silicide nanodot patterns by medium-energy ion beam sputtering (IBS) of silicon targets with a simultaneous and isotropic molybdenum supply. Atomic force microscopy (AFM) studies show that these patterns are qualitatively similar to those produced thus far at low ion energies. We have determined the relevance of the ion species on the pattern ordering and properties. For the higher ordered patterns produced by Xe(+) ions, the pattern wavelength depends linearly on the ion energy. The dot nanostructures are silicide-rich as assessed by x-ray photoelectron spectroscopy (XPS) and emerge in height due to their lower sputtering yield, as observed by electron microscopy. Remarkably, a long wavelength corrugation is observed on the surface which is correlated with both the Mo content and the dot pattern properties. Thus, as assessed by electron microscopy, the protrusions are Mo-rich with higher and more spaced dots on their surface whereas the valleys are Mo-poor with smaller dots that are closer to each other. These findings indicate that there is a correlation between the local metal content of the surface and the nanodot pattern properties both at the nanodot and the large corrugation scales. These results contribute to advancing the understanding of this interesting nanofabrication method and aid in developing a comprehensive theory of nanodot pattern formation and evolution.

  3. Whole beam method for photorefractive nonlinear optics

    NASA Astrophysics Data System (ADS)

    Cronin-Golomb, Mark

    1992-05-01

    A whole beam split step method is developed for photorefractive nonlinear optics. The nonlinear optical beam coupling process is separated into short steps of diffractive propagation and application of calculated nonlinearity. The method includes the effects of diffractive propagation without using multi-wave coupled wave theory. Two-beam coupling of continous wave, femtosecond and reduced spatial coherence gaussian beams is used to illustrate the method.

  4. A Comparative High-Resolution Electron Microscope Study of Ag Clusters Produced by a Sputter-Gas Aggregation and Ion Cluster Beam Technique

    NASA Astrophysics Data System (ADS)

    Hohl, Georg-Friedrich; Hihara, Takehiko; Sakurai, Masaki; Oishi, Takashi; Wakoh, Kimio; Sumiyama, Kenji; Suzuki, Kenji

    1994-03-01

    Ag clusters were formed by a sputter-gas-aggregation process [H. Haberland et al..: J. Vac. Sci. Technol. A 10 (1992) 3266] and the ionized cluster beam (ICB) [T. Takagi: Ionized-Cluster Beam Deposition and Epitaxy (Noyes, Park Ridge, 1988)] technique. The Ag clusters deposited on collodion-coated microgrids were investigated by high-resolution transmission electron microscopy. The diameter of those clusters, d, ranges from 1 nm up to about 10 nm for specimens produced by the sputter-gas aggregation technique, depending on the sputter condition and the deposition time. Comparable times of the ICB deposition lead to a broader distribution up to d≈20 nm, suggesting the formation of islands with extremely flat shapes. High percentages of crystalline particles obtained by both techniques are either single crystals or multiple twins with clear lattice images.

  5. Ion beam induced surface patterns due to mass redistribution and curvature-dependent sputtering

    NASA Astrophysics Data System (ADS)

    Bobes, Omar; Zhang, Kun; Hofsäss, Hans

    2012-12-01

    Recently it was reported that ion-induced mass redistribution would solely determine nano pattern formation on ion-irradiated surfaces. We investigate the pattern formation on amorphous carbon thin films irradiated with Xe ions of energies between 200 eV and 10 keV. Sputter yield as well as number of displacements within the collision cascade vary strongly as function of ion energy and allow us to investigate the contributions of curvature-dependent erosion according to the Bradley-Harper model as well as mass redistribution according to the Carter-Vishnyakov model. We find parallel ripple orientations for an ion incidence angle of 60° and for all energies. A transition to perpendicular pattern orientation or a rather flat surface occurs around 80° for energies between 1 keV and 10 keV. Our results are compared with calculations based on both models. For the calculations we extract the shape and size of Sigmund's energy ellipsoid (parameters a, σ, μ), the angle-dependent sputter yield, and the mean mass redistribution distance from the Monte Carlo simulations with program SDTrimSP. The calculated curvature coefficients Sx and Sy describing the height evolution of the surface show that mass redistribution is dominant for parallel pattern formation in the whole energy regime. Furthermore, the angle where the parallel pattern orientation starts to disappear is related to curvature-dependent sputtering. In addition, we investigate the case of Pt erosion with 200 eV Ne ions, where mass redistribution vanishes. In this case, we observe perpendicular ripple orientation in accordance with curvature-dependent sputtering and the predictions of the Bradley-Harper model.

  6. Solar Ion Sputter Deposition in the Lunar Regolith: Experimental Simulation Using Focused-Ion Beam Techniques

    NASA Technical Reports Server (NTRS)

    Christoffersen, R.; Rahman, Z.; Keller, L. P.

    2012-01-01

    As regions of the lunar regolith undergo space weathering, their component grains develop compositionally and microstructurally complex outer coatings or "rims" ranging in thickness from a few 10 s to a few 100's of nm. Rims on grains in the finest size fractions (e.g., <20 m) of mature lunar regoliths contain optically-active concentrations of nm size metallic Fe spherules, or "nanophase Fe(sup o)" that redden and attenuate optical reflectance spectral features important in lunar remote sensing. Understanding the mechanisms for rim formation is therefore a key part of connecting the drivers of mineralogical and chemical changes in the lunar regolith with how lunar terrains are observed to become space weathered from a remotely-sensed point of view. As interpreted based on analytical transmission electron microscope (TEM) studies, rims are produced from varying relative contributions from: 1) direct solar ion irradiation effects that amorphize or otherwise modify the outer surface of the original host grain, and 2) nanoscale, layer-like, deposition of extrinsic material processed from the surrounding soil. This extrinsic/deposited material is the dominant physical host for nanophase Fe(sup o) in the rims. An important lingering uncertainty is whether this deposited material condensed from regolith components locally vaporized in micrometeorite or larger impacts, or whether it formed as solar wind ions sputtered exposed soil and re-deposited the sputtered ions on less exposed areas. Deciding which of these mechanisms is dominant, or possibility exclusive, has been hampered because there is an insufficient library of chemical and microstructural "fingerprints" to distinguish deposits produced by the two processes. Experimental sputter deposition / characterization studies relevant to rim formation have particularly lagged since the early post-Apollo experiments of Hapke and others, especially with regard to application of TEM-based characterization techniques. Here

  7. Reactive Ar ion beam sputter deposition of TiO2 films: Influence of process parameters on film properties

    NASA Astrophysics Data System (ADS)

    Bundesmann, C.; Lautenschläger, T.; Thelander, E.; Spemann, D.

    2017-03-01

    Several sets of TiO2 films were grown by Ar ion beam sputter deposition under systematic variation of ion energy and geometrical parameters (ion incidence angle and polar emission angle). The films were characterized concerning thickness, growth rate, structural properties, composition, mass density, and optical properties. The film thicknesses show a cosine-like angular distribution, and the growth rates were found to increase with increasing ion incidence angle and ion energy. All films are amorphous and stoichiometric, but can contain a considerable amount of backscattered primary particles. The atomic fraction of Ar particles decreases systematically with increasing scattering angle, independent from ion energy and ion incidence angle. Mass density and index of refraction show similar systematic variations with ion energy and geometrical parameters. The film properties are mainly influenced by the scattering geometry, and only slightly by ion energy and ion incidence angle. The variations in the film properties are tentatively assigned to changes in the angular and energy distribution of the sputtered target particles and back-scattered primary particles.

  8. Formation of nanoripples on amorphous alumina thin films during low-energy ion-beam sputtering: Experiments and simulations

    NASA Astrophysics Data System (ADS)

    Babonneau, D.; Vandenhecke, E.; Camelio, S.

    2017-02-01

    The formation of nanopatterns induced by low-energy (0.5-1.5 keV) Xe+ ion-beam sputtering of amorphous alumina thin films is investigated by atomic force microscopy and grazing incidence small-angle x-ray scattering. The observed dependence of the surface morphology on ion incidence angle, temperature, ion energy, and fluence is compared with the predictions of linear and nonlinear continuum theoretical models. The results show that ion-induced mass redistribution stabilizes the surface at near-normal and very grazing incidence angles, while curvature-dependent erosion governs the formation of periodic nanoripples in the range of incidence angles between 50∘ and 65∘. Surface-confined ion-induced viscous flow is shown to be the dominant relaxation mechanism during erosion. Moreover, pattern evolution with ion fluence (pattern ordering and asymmetry of the ripple profile, in particular) suggests that nonlinear effects that are ignored by the Sigmund's collision cascade theory of sputtering contribute strongly to the observed dynamics of ripple formation.

  9. Structural analysis of the outermost hair surface using TOF-SIMS with gas cluster ion beam sputtering.

    PubMed

    Lshikawa, Kazutaka; Okamoto, Masayuki; Aoyagi, Satoka

    2016-06-28

    A hair cuticle, which consists of flat overlapping scales that surround the hair fiber, protects inner tissues against external stimuli. The outermost surface of the cuticle is covered with a thin membrane containing proteins and lipids called the epicuticle. In a previous study, the authors conducted a depth profile analysis of a hair cuticle's amino acid composition to characterize its multilayer structure. Time-of-flight secondary ion mass spectrometry with a bismuth primary ion source was used in combination with the C60 sputtering technique for the analysis. It was confirmed that the lipids and cysteine-rich layer exist on the outermost cuticle surface, which is considered to be the epicuticle, though the detailed structure of the epicuticle has not been clarified. In this study, depth profile analysis of the cuticle surface was conducted using the argon gas cluster ion beam (Ar-GCIB) sputtering technique, in order to characterize the structure of the epicuticle. The shallow depth profile of the cuticle surface was investigated using an Ar-GCIB impact energy of 5 keV. Compared to the other amino acid peaks rich in the epicuticle, the decay of 18-methyleicosanic acid (18-MEA) thiolate peak was the fastest. This result suggests that the outermost surface of the hair is rich in 18-MEA. In conclusion, our results indicate that the outermost surfaces of cuticles have a multilayer (lipid and protein layers), which is consistent with the previously proposed structure.

  10. Growth stress buildup in ion beam sputtered Mo thin films and comparative study of stress relaxation upon thermal annealing or ion irradiation

    SciTech Connect

    Debelle, A.; Abadias, G.; Michel, A.; Jaouen, C.; Pelosin, V.

    2007-09-15

    In an effort to address the understanding of the origin of growth stress in thin films deposited under very energetic conditions, the authors investigated the stress state and microstructure of Mo thin films grown by ion beam sputtering (IBS) as well as the stress relaxation processes taking place during subsequent thermal annealing or ion irradiation. Different sets of samples were grown by varying the IBS deposition parameters, namely, the energy E{sub 0} and the flux j of the primary ion beam, the target-to-sputtering gas mass ratio M{sub 1}/M{sub 2} as well as film thickness. The strain-stress state was determined by x-ray diffraction using the sin{sup 2} {psi} method and data analyzed using an original stress model which enabled them to correlate information at macroscopic (in terms of stress) and microscopic (in terms of defect concentration) levels. Results indicate that these refractory metallic thin films are characterized by a high compressive growth stress (-2.6 to -3.8 GPa), resulting from the creation of a large concentration (up to {approx}1.4%) of point or cluster defects, due to the atomic peening mechanism. The M{sub 1}/M{sub 2} mass ratio enables tuning efficiently the mean deposited energy of the condensing atoms; thus, it appears to be the more relevant deposition parameter that allows modifying both the microstructure and the stress level in a significant way. The growth stress comes out to be highly unstable. It can be easily relaxed either by postgrowth thermal annealing or ion irradiation in the hundred keV range at very low dose [<0.1 dpa (displacement per atom)]. It is shown that thermal annealing induces deleterious effects such as oxidation of the film surface, decrease of the film density, and in some cases adhesion loss at the film/substrate interface, while ion irradiation allows controlling the stress level without generating any macroscopic damage.

  11. Study of YSZ films deposited using electron-beam sputtering onto a nickel alloy with a perfect cube texture

    NASA Astrophysics Data System (ADS)

    Schastlivtsev, V. M.; Arkhipova, N. K.; Blinov, I. V.; Gervas'eva, I. V.; Loginov, B. A.; Matveev, S. A.; Popov, V. V.; Rodionov, D. P.; Sazonova, V. A.

    2008-12-01

    X-ray diffraction analysis and atomic force microscopy were used to study the effect of the state of a substrate (an Ni-11 at % Cr ribbon) and deposition conditions on the texture and roughness of an yttrium-stabilized zirconia (YSZ) buffer layer deposited by electron-beam sputtering. The presence of a sharp cube texture in the nickel-alloy ribbon was shown to be insufficient condition for obtaining a biaxial texture in the YSZ film. A two-dimensional (2 × 2) sulfur superstructure should be formed on the nickel-ribbon surface. In this case, the YSZ film with a sharp {100} <100> cube texture and surface roughness of ˜10-15 nm can be prepared at a low deposition rate of 0.005-0.008 nm/s and a substrate temperature of 700-800°C.

  12. Tunneling conductance studies in the ion-beam sputtered CoFe/Mg/MgO/NiFe magnetic tunnel junctions

    SciTech Connect

    Singh, Braj Bhusan; Chaudhary, Sujeet

    2013-06-03

    Magnetic tunnel junctions consisting of CoFe(10 nm)/Mg(1 nm)/MgO(3.5 nm)/NiFe(10 nm) are grown at room temperature using dual ion beam sputtering via in-situ shadow masking. The effective barrier thickness and average barrier height are estimated to be 3.5 nm (2.9 nm) and 0.69 eV (1.09 eV) at 290 K (70 K), respectively. The tunnel magnetoresistance value of 0.2 % and 2.3 % was observed at 290 K and 60 K, respectively. The temperature dependence of tunneling conductance revealed the presence of localized states present within the forbidden gap of the MgO barrier leading to finite inelastic spin independent tunneling contributions, which degrade the TMR value.

  13. Ion beam sputter-deposited thin film coatings for protection of spacecraft polymers in low earth orbit

    NASA Technical Reports Server (NTRS)

    Banks, B. A.; Mirtich, M. J.; Rutledge, S. K.; Swec, D. M.; Nahra, H. K.

    1985-01-01

    Ion beam sputter-deposited thin films at Al2O3, SiO2, and a codeposited mixture of predominantly SiO2 with small amounts of fluoropolymer were evaluated both in laboratory plasma ashing tests and in space on board Shuttle flight STS-8 for effectiveness in preventing oxidation of polyimide Kapton. Measurements of mass loss and optical performance of coated and uncoated polyimide samples exposed to the low earth orbital environment are presented. Optical techniques were used to measure loss rates of protective films exposed to atomic oxygen. Results of the analysis of the space flight exposed samples indicate that thin film metal oxide coatings are very effective in protecting the polyimide. Metal oxide coatings with a small amount of fluoropolymer codeposited have the additional benefit of great flexibility.

  14. Ion beam sputter-deposited thin film coatings for protection of spacecraft polymers in low Earth orbit

    NASA Technical Reports Server (NTRS)

    Banks, B. A.; Mirtich, M. J.; Rutledge, S. K.; Swec, D. M.; Nahra, H. K.

    1985-01-01

    Ion beam sputter-deposited thin films of Al2O3, SiO2, and a codeposited mixture of predominantly SiO2 with small amounts of a fluoropolymer were evaluated both in laboratory plasma ashing tests and in space on board shuttle flight STS-8 for effectiveness in preventing oxidation of polyimide Kapton. Measurements of mass loss and optical performance of coated and uncoated polyimide samples exposed to the low Earth orbital environment are presented. Optical techniques were used to measure loss rates of protective films exposed to atomic oxygen. Results of the analysis of the space flight exposed samples indicate that thin film metal oxide coatings are very effective in protecting the polyimide. Metal oxide coatings with a small amount of fluoropolymer codeposited have the additional benefit of great flexibility.

  15. Effect of annealing on the optical properties of the ion beam sputtered NiO thin film

    NASA Astrophysics Data System (ADS)

    Chouhan, Romita; Baraskar, Priyanka; Dar, Tanveer A.; Agrawal, Arpana; Gupta, Mukul; Sen, Pranay K.; Sen, Pratima.

    2017-05-01

    Effect of annealing on optical characteristics of Nickel oxide thin films deposited by ion beam sputtering technique from a Ni target in a mixture of oxygen and argon gas on to a glass substrate has been studied. The deposited films were characterized in as deposited state(S1) and after annealing(S2) at temp of 523 K. Crystalline properties of films were investigated using X-ray diffraction technique from which we found that both S1 and S2 shows the polycrystalline nature with preferential growth along (111) plane. The transmittance of the S2 films was decreased. The surface morphology of the film was studied using atomic force microscopy (AFM). The nonlinear optical properties of the films were obtained using z-scan technique which reveals that the nonlinear absorption coefficient of S2 films is larger than that of S1 samples. Improved nonlinearity suggests the utility of the grown films for optoelectronic device application.

  16. Improvement of silicon solar cell efficiency by ion beam sputtered deposition of AlOxNy thin films.

    PubMed

    Chen, Sheng-Hui; Hsu, Chun-Che; Wang, Hsuan-Wen; Yeh, Chi-Li; Tseng, Shao-Ze; Lin, Hung-Ju; Lee, Cheng-Chung; Peng, Cheng-Yu

    2011-03-20

    Negative charge material, AlOxNy, has been fabricated to passivate the surface of p-type silicon. The fabrication of AlOxNy was possible by using ion beam sputtering deposition to deposit AlN thin film on the surface of a p-type silicon wafer and following annealing in oxygen ambient. Capacitance-voltage analysis shows the fixed charge density has increased from 10(11) cm(-2) to 2.26×10(12) cm(-2) after annealing. The solar cell efficiency increased from 15.9% to 17.3%, which is also equivalent to the reduction of surface recombination velocity from 1×10(5)  to 32 cm/s.

  17. Forming-free high-endurance Al/ZnO/Al memristor fabricated by dual ion beam sputtering

    NASA Astrophysics Data System (ADS)

    Kumar, Amitesh; Das, Mangal; Garg, Vivek; Sengar, Brajendra S.; Htay, Myo Than; Kumar, Shailendra; Kranti, Abhinav; Mukherjee, Shaibal

    2017-06-01

    We report dual ion beam sputtering fabrication of an Al/ZnO/Al memristor displaying forming-free bipolar resistive switching characteristics with memristive behavior without necessitating any post-processing steps. A nearly amorphous ZnO thin film and an appropriate concentration of oxygen vacancies play a significant role in imparting forming-free, stable, and reliable behavior to memory cells. Besides, sufficient non-lattice oxygen ions in the film play a crucial role in the resistive switching process. The AlOx interface layer is observed to strongly affect the switching mechanism in the memory device by altering the barrier at the Al/ZnO interface. The device shows stable switching behavior for >250 cycles with good retention and stable set/reset voltages.

  18. Effects of additives on the preferred orientation of Mn-Zn ferrite thin films deposited by ion beam sputtering

    NASA Astrophysics Data System (ADS)

    Cho, Hae Seok; Kim, Hyeong Joon

    1995-03-01

    We investigated the effects of additives on the preferred orientation of the Mn-Zn ferrite thin films deposited on SiO2(1000 Å)/Si(100) at 350 °C by ion beam sputtering. A mosaic target, consisting of a single crystal (100) Mn-Zn ferrite with a metal strip on it, was employed as the target. The preferred orientation of the ferrite films was (hhh) for the target with or without Fe and Zn additives, and (h00) for Ti addition. In the case of Cu addition, a weak (311) orientation appeared with a strong (hhh) preferred orientation. The origin of the changes in the preferred orientation with different additives was discussed. The easy axis of magnetization, however, lay in the direction parallel to the film plane due to large shape anisotropy, irrespective of the preferred orientation.

  19. Thickness dependence of the preferred orientation of Mn-Zn ferrite thin films deposited by ion-beam sputtering

    NASA Astrophysics Data System (ADS)

    Cho, Hae Seok; Kim, Hyeong Joon

    1995-07-01

    The thickness dependence of the preferred orientation of the Cu or Ti added Mn-Zn ferrite thin films deposited on SiO2(1000 Å)/Si(100) at 350 °C by ion-beam sputtering was investigated. A mosaic target, consisting of a single-crystal (110) Mn-Zn ferrite with a metal strip on it, was employed as the target. The (hhh) preferred orientation, formed at the initial growth stage, of the Cu added Mn-Zn ferrite film changed to the (h00) preferred orientation with increasing film thickness, while the initially formed (h00) preferred orientation of the Ti added one was enhanced with increasing film thickness. Such different behaviors were discussed in terms of the surface energy and the preferred growth orientation of the ferrite film. The thickness dependence of magnetic properties of the ferrite films was also investigated.

  20. Electrostatic energy analyzer measurements of low energy zirconium beam parameters in a plasma sputter-type negative ion source

    SciTech Connect

    Malapit, Giovanni M.; Mahinay, Christian Lorenz S.; Poral, Matthew D.; Ramos, Henry J.

    2012-02-15

    A plasma sputter-type negative ion source is utilized to produce and detect negative Zr ions with energies between 150 and 450 eV via a retarding potential-type electrostatic energy analyzer. Traditional and modified semi-cylindrical Faraday cups (FC) inside the analyzer are employed to sample negative Zr ions and measure corresponding ion currents. The traditional FC registered indistinct ion current readings which are attributed to backscattering of ions and secondary electron emissions. The modified Faraday cup with biased repeller guard ring, cut out these signal distortions leaving only ringings as issues which are theoretically compensated by fitting a sigmoidal function into the data. The mean energy and energy spread are calculated using the ion current versus retarding potential data while the beam width values are determined from the data of the transverse measurement of ion current. The most energetic negative Zr ions yield tighter energy spread at 4.11 eV compared to the least energetic negative Zr ions at 4.79 eV. The smallest calculated beam width is 1.04 cm for the negative Zr ions with the highest mean energy indicating a more focused beam in contrast to the less energetic negative Zr ions due to space charge forces.

  1. Electrostatic energy analyzer measurements of low energy zirconium beam parameters in a plasma sputter-type negative ion source.

    PubMed

    Malapit, Giovanni M; Mahinay, Christian Lorenz S; Poral, Matthew D; Ramos, Henry J

    2012-02-01

    A plasma sputter-type negative ion source is utilized to produce and detect negative Zr ions with energies between 150 and 450 eV via a retarding potential-type electrostatic energy analyzer. Traditional and modified semi-cylindrical Faraday cups (FC) inside the analyzer are employed to sample negative Zr ions and measure corresponding ion currents. The traditional FC registered indistinct ion current readings which are attributed to backscattering of ions and secondary electron emissions. The modified Faraday cup with biased repeller guard ring, cut out these signal distortions leaving only ringings as issues which are theoretically compensated by fitting a sigmoidal function into the data. The mean energy and energy spread are calculated using the ion current versus retarding potential data while the beam width values are determined from the data of the transverse measurement of ion current. The most energetic negative Zr ions yield tighter energy spread at 4.11 eV compared to the least energetic negative Zr ions at 4.79 eV. The smallest calculated beam width is 1.04 cm for the negative Zr ions with the highest mean energy indicating a more focused beam in contrast to the less energetic negative Zr ions due to space charge forces.

  2. Conformal growth of Mo/Si multilayers on grating substrates using collimated ion beam sputtering

    SciTech Connect

    Voronov, D. L.; Gawlitza, Peter; Cambie, Rossana; Dhuey, Scott; Gullikson, Eric M.; Warwick, Tony; Braun, Stefan; Yashchuk, Valeriy V.; Padmore, Howard A.

    2012-05-07

    Deposition of multilayers on saw-tooth substrates is a key step in the fabrication of multilayer blazed gratings (MBG) for extreme ultraviolet and soft x-rays. Growth of the multilayers can be perturbed by shadowing effects caused by the highly corrugated surface of the substrates, which results in distortion of the multilayer stack structure and degradation of performance of MBGs. In this study, to minimize the shadowing effects, we used an ion-beamsputtering machine with a highly collimated atomic flux to deposit Mo/Si multilayers on saw-tooth substrates. The sputtering conditions were optimized by finding a balance between smoothening and roughening processes in order to minimize degradation of the groove profile in the course of deposition and at the same time to keep the interfaces of a multilayer stack smooth enough for high efficiency. An optimal value of energy of 200 eV for sputtering Kr+ ions was found by deposition of test multilayers on flat substrates at a range of ion energies. Two saw-tooth substrates were deposited at energies of 200 eV and 700 eV for the sputtering ions. It was found that reduction of the ion energy improved the blazing performance of the MBG and resulted in a 40% gain in the diffraction efficiency due to better replication of the groove profile by the multilayer. As a result of the optimization performed, an absolute diffraction efficiency of 28.8% was achieved for the 2nd blaze order of the MBG with a groove density of 7350 lines/mm at a wavelength of 13.5 nm. Lastly, details of the growth behavior of the multilayers on flat and saw-tooth substrates are discussed in terms of the linear continuous model of film growth.

  3. New Cs sputter ion source with polyatomic ion beams for secondary ion mass spectrometry applications

    NASA Astrophysics Data System (ADS)

    Belykh, S. F.; Palitsin, V. V.; Veryovkin, I. V.; Kovarsky, A. P.; Chang, R. J. H.; Adriaens, A.; Dowsett, M. G.; Adams, F.

    2007-08-01

    A simple design for a cesium sputter ion source compatible with vacuum and ion-optical systems as well as with electronics of the commercially available Cameca IMS-4f instrument is reported. This ion source has been tested with the cluster primary ions of Sin- and Cun-. Our experiments with surface characterization and depth profiling conducted to date demonstrate improvements of the analytical capabilities of the secondary ion mass spectrometry instrument due to the nonadditive enhancement of secondary ion emission and shorter ion ranges of polyatomic projectiles compared to atomic ones with the same impact energy.

  4. New Cs sputter ion source with polyatomic ion beams for secondary ion mass spectrometry applications

    SciTech Connect

    Belykh, S. F.; Palitsin, V. V.; Veryovkin, I. V.; Kovarsky, A. P.; Chang, R. J. H.; Adriaens, A.; Dowsett, M. G.; Adams, F.

    2007-08-15

    A simple design for a cesium sputter ion source compatible with vacuum and ion-optical systems as well as with electronics of the commercially available Cameca IMS-4f instrument is reported. This ion source has been tested with the cluster primary ions of Si{sub n}{sup -} and Cu{sub n}{sup -}. Our experiments with surface characterization and depth profiling conducted to date demonstrate improvements of the analytical capabilities of the secondary ion mass spectrometry instrument due to the nonadditive enhancement of secondary ion emission and shorter ion ranges of polyatomic projectiles compared to atomic ones with the same impact energy.

  5. New Cs sputter ion source with polyatomic ion beams for secondary ion mass spectrometry applications.

    PubMed

    Belykh, S F; Palitsin, V V; Veryovkin, I V; Kovarsky, A P; Chang, R J H; Adriaens, A; Dowsett, M G; Adams, F

    2007-08-01

    A simple design for a cesium sputter ion source compatible with vacuum and ion-optical systems as well as with electronics of the commercially available Cameca IMS-4f instrument is reported. This ion source has been tested with the cluster primary ions of Si(n)(-) and Cu(n)(-). Our experiments with surface characterization and depth profiling conducted to date demonstrate improvements of the analytical capabilities of the secondary ion mass spectrometry instrument due to the nonadditive enhancement of secondary ion emission and shorter ion ranges of polyatomic projectiles compared to atomic ones with the same impact energy.

  6. A new Cs sputter ion source with polyatomic ion beams for SIMS applications.

    SciTech Connect

    Belykh, S. F.; Palitsin, V. V.; Veryovkin, I. V.; Kovarsky, A. P.; Chang, R. J. H.; Adriaens, A.; Dowsett, M. G.; Adams, F.; Materials Science Division; Univ. Warwick; Ioffe Phys.-Tech. Inst.; Ghent Univ.; Univ. Antwerp

    2007-08-02

    A simple design for a cesium sputter ion source compatible with vacuum and ion-optical systems as well as with electronics of the commercially available Cameca IMS-4f instrument is reported. This ion source has been tested with the cluster primary ions of Si{sub n}{sup -} and Cu{sub n}{sup -}. Our experiments with surface characterization and depth profiling conducted to date demonstrate improvements of the analytical capabilities of the secondary ion mass spectrometry instrument due to the nonadditive enhancement of secondary ion emission and shorter ion ranges of polyatomic projectiles compared to atomic ones with the same impact energy.

  7. Comparison of Electrochemical Luminescence Characteristics of Titanium Dioxide Films Prepared by Sputtering and Sol-Gel Combustion Methods

    NASA Astrophysics Data System (ADS)

    Park, Hee-Dae; Sung, Youl-Moon; Park, Min-Woo; Song, Jae-Eun

    2013-05-01

    Titanium dioxide (TiO2) films were deposited on fluorine-doped tin-oxide (FTO) glass by sputtering and sol-gel combustion (SGC) coating methods and investigated with respect to their electrochemical luminescence (ECL) performance. The sputtered TiO2 films were denser than the SGC-deposited films, while the SGC films were found to be superior in porosity to the sputtered films. The charge transfer resistance (R2) of the SGC (450 °C) TiO2-based cell was found to be lower than those of the sputtered TiO2-based cells. The SGC (450 °C) cell emitted a more intense ECL than the sputter (450 °C) cells. The threshold voltage at which the emission starts was 3.0 V for the SGC (450 °C) cell, which was lower than that (3.5 V) for the sputter (450 °C) cell. The efficiencies were 0.04 lm/W for the sputter (450 °C) cell (R2 = 22.3 Ω, porosity= 27.2%) and 0.085 lm/W for the SGC (450 °C) cell (R2 = 12.8 Ω, porosity= 65.8%). The SGC-deposited TiO2 films were found to be superior in ECL efficiency to the sputtered TiO2 films.

  8. Radiation beam collimation system and method

    SciTech Connect

    Schmidt, Oliver A.; Ramanathan, Mohan

    2015-08-18

    The invention provides a method for collimating a radiation beam, the method comprising subjecting the beam to a collimator that yaws and pitches, either separately or simultaneously relative to the incident angle of the beam. Also provided is a system for collimating radiation beams, the system comprising a collimator body, and a stage for pitching and yawing the body. A feature of the invention is that a single, compact mask body defines one or a plurality of collimators having no moving surfaces relative to each other, whereby the entire mask body is moved about a point in space to provide various collimator opening dimensions to oncoming radiation beams.

  9. Auger electron nanoscale mapping and x-ray photoelectron spectroscopy combined with gas cluster ion beam sputtering to study an organic bulk heterojunction

    SciTech Connect

    Heon Kim, Seong; Heo, Sung; Ihn, Soo-Ghang; Yun, Sungyoung; Hwan Park, Jong; Chung, Yeonji; Lee, Eunha; Park, Gyeongsu; Yun, Dong-Jin

    2014-06-16

    The lateral and vertical distributions of organic p/n bulk heterojunctions for an organic solar cell device are, respectively, investigated using nanometer-scale Auger electron mapping and using X-ray photoelectron spectroscopy (XPS) with Ar gas cluster ion beam (GCIB) sputtering. The concentration of sulfur, present only in the p-type material, is traced to verify the distribution of p-type (donor) and n-type (acceptor) materials in the blended structure. In the vertical direction, a considerable change in atomic sulfur concentration is observed using XPS depth profiling with Ar GCIB sputtering. In addition, Auger electron mapping of sulfur reveals the lateral 2-dimensional distribution of p- and n-type materials. The combination of Auger electron mapping with Ar GCIB sputtering should thereby allow the construction of 3-dimensional distributions of p- and n-type materials in organic photovoltaic cells.

  10. Adherence of ion beam sputter deposited metal films on H-13 steel

    NASA Technical Reports Server (NTRS)

    Mirtich, M. J.

    1980-01-01

    An electron bombardment argon ion source sputter deposited 17 metals and metal oxides on H-13 steel. The films ranged 1 to 8 micrometers in thickness and their adherence was generally greater than the capacity of the measuring device; adherence quality depended on proper precleaning of the substrate before deposition. N2 or air was introduced for correct stoichiometry in metallic compounds. Au, Ag, MgO, and Ta5Si3 films 8 microns thick have bond strength equal to 1 micron coatings; the bond strength of pure metallic films up to 5 microns thick was greater than the epoxy to film bond (8000 psi). The results of exposures of coated material to temperatures up to 700 C are presented.

  11. Structural improvement of zinc oxide films produced by ion beam assisted reactive sputtering

    NASA Astrophysics Data System (ADS)

    Köhl, D.; Luysberg, M.; Wuttig, M.

    2010-05-01

    Reactively sputtered zinc oxide thin films exhibit low crystalline order when deposited on unheated substrates. To improve the structural order, films are usually deposited onto heated substrates at temperatures of about 200-300 °C. Nevertheless, techniques that enable room temperature deposition of ZnO films with high structural quality would be advantageous. In this work ion bombardment from an auxiliary ion gun during film growth is employed to improve the crystalline quality. Xe+ ion bombardment under appropriate conditions leads to the growth of films with high crystalline order. Based on our structural investigations employing x-ray diffraction, atomic force microscopy and transmission electron microscopy, a growth model is proposed which explains the impact of ion bombardment on the structural evolution. We prove that it is especially the nucleation stage of the growth process which is susceptible to this ion bombardment.

  12. Energy Dependence of Angular Distributions of Sputtered Particles by Ion-Beam Bombardment at Normal Incidence

    NASA Astrophysics Data System (ADS)

    Matsuda, Yoshinobu; Yamamura, Yasunori; Ueda, Yasutoshi; Uchino, Kiichiro; Muraoka, Katsunori; Maeda, Mitsuo; Akazaki, Masanori

    1986-01-01

    The angular distributions of sputtered Fe-atoms were measured using the laser fluorescence technique during Ar-ion bombardment for energies of 0.6, 1, 2 and 3 keV at normal incidence. The measured cosine distribution at 0.6 keV progressively deviated to an over-cosine distribution at higher energies, and at 3 keV the angular distribution was an over-cosine distribution of about 20%. The experimental results agree qualitatively with calculations by a recent computer simulation code, ACAT. The results are explained by the competition between surface scattering and the effects of primary knock-on atoms, which tend to make the angular distributions over-cosine and under-cosine, respectively.

  13. Low-temperature fabrication technologies of Si solar cell by sputter epitaxy method

    NASA Astrophysics Data System (ADS)

    Fujimura, Sohei; Someya, Takahiro; Yoshiba, Shuhei; Tsukamoto, Takahiro; Kamisako, Koichi; Suda, Yoshiyuki

    2015-08-01

    We applied an epitaxial n+-type Si emitter layer grown on a p-type Si substrate by our environmentally-light-load sputter epitaxy method using RF magnetron sputtering without dopant activation annealing for a Si solar cell. We also applied low-temperature cleaning of the substrate with a hydrogen-fluoride treatment at room temperature prior to the emitter layer growth instead of the conventionally used high-temperature thermal cleaning under vacuum condition. In addition, by our sputter epitaxy method, we determined the optimum temperature for the emitter growth. An emitter layer with good crystallinity is obtained, and the solar cell, formed with an emitter layer grown at the optimum growth temperature of 410 °C, exhibits an energy conversion efficiency of 12.3% in 100% aperture ratio equivalent without a texture or an antireflection coat. By the above low-temperature processes, a solar cell can be fabricated with process temperatures below 410 °C, which exhibits low temperature processes.

  14. Particle beam injector system and method

    DOEpatents

    Guethlein, Gary

    2013-06-18

    Methods and devices enable coupling of a charged particle beam to a radio frequency quadrupole accelerator. Coupling of the charged particle beam is accomplished, at least in-part, by relying on of sensitivity of the input phase space acceptance of the radio frequency quadrupole to the angle of the input charged particle beam. A first electric field across a beam deflector deflects the particle beam at an angle that is beyond the acceptance angle of the radio frequency quadrupole. By momentarily reversing or reducing the established electric field, a narrow portion of the charged particle beam is deflected at an angle within the acceptance angle of the radio frequency quadrupole. In another configuration, beam is directed at an angle within the acceptance angle of the radio frequency quadrupole by the first electric field and is deflected beyond the acceptance angle of the radio frequency quadrupole due to the second electric field.

  15. Synthesis and characterization of CdTe nanostructures grown by RF magnetron sputtering method

    NASA Astrophysics Data System (ADS)

    Akbarnejad, Elaheh; Ghoranneviss, Mahmood; Hantehzadeh, Mohammad Reza

    2017-08-01

    In this paper, we synthesize Cadmium Telluride nanostructures by radio frequency (RF) magnetron sputtering system on soda lime glass at various thicknesses. The effect of CdTe nanostructures thickness on crystalline, optical and morphological properties has been studied by means of X-ray diffraction (XRD), UV-VIS-NIR spectrophotometry, field emission scanning electron microscopy (FESEM) and atomic force microscopy (AFM), respectively. The XRD parameters of CdTe nanostructures such as microstrain, dislocation density, and crystal size have been examined. From XRD analysis, it could be assumed that increasing deposition time caused the formation of the wurtzite hexagonal structure of the sputtered films. Optical properties of the grown nanostructures as a function of film thickness have been observed. All the films indicate more than 60% transmission over a wide range of wavelengths. The optical band gap values of the films have obtained in the range of 1.62-1.45 eV. The results indicate that an RF sputtering method succeeded in depositing of CdTe nanostructures with high purity and controllable physical properties, which is appropriate for photovoltaic and nuclear detector applications.

  16. Focused ion beam source method and apparatus

    DOEpatents

    Pellin, Michael J.; Lykke, Keith R.; Lill, Thorsten B.

    2000-01-01

    A focused ion beam having a cross section of submicron diameter, a high ion current, and a narrow energy range is generated from a target comprised of particle source material by laser ablation. The method involves directing a laser beam having a cross section of critical diameter onto the target, producing a cloud of laser ablated particles having unique characteristics, and extracting and focusing a charged particle beam from the laser ablated cloud. The method is especially suited for producing focused ion beams for semiconductor device analysis and modification.

  17. Ion beam irradiation of nanostructures: sputtering, dopant incorporation, and dynamic annealing

    NASA Astrophysics Data System (ADS)

    Johannes, Andreas; Holland-Moritz, Henry; Ronning, Carsten

    2015-03-01

    Nanostructured materials are today subject to intense research, as their mesoscopic properties will enable a variety of new applications in the future. They can be grown with specific properties under equilibrium conditions by a variety of different top-down and bottom-up synthesis techniques. Subsequent modification, including doping or alloying using the highly non-equilibrium process of ion irradiation, significantly expands the potpourri of functionality of what is today an important material class. Important and newly discovered effects must be considered compared to ion irradiation of bulk or thin film counterparts, as the ion range becomes comparable to the size of the nanotructure. Here, we will review recent high fluence irradiation studies reporting on non-linear incorporation of implanted species, enhanced sputtering yields, morphological changes induced by the high thermal impact, as well as strongly enhanced dynamic annealing for such confined nanostructures. Our review will also include the concurrent and recent progress in developing new simulation tools in order to describe and quantify those newly observed effects.

  18. Highly ordered nanopatterns on Ge and Si surfaces by ion beam sputtering.

    PubMed

    Ziberi, B; Cornejo, M; Frost, F; Rauschenbach, B

    2009-06-03

    The bombardment of surfaces with low-energy ion beams leads to material erosion and can be accompanied by changes in the topography. Under certain conditions this surface erosion can result in well-ordered nanostructures. Here an overview of the pattern formation on Si and Ge surfaces under low-energy ion beam erosion at room temperature will be given. In particular, the formation of ripple and dot patterns, and the influence of different process parameters on their formation, ordering, shape and type will be discussed. Furthermore, the internal ion beam parameters inherent to broad beam ion sources are considered as an additional degree of freedom for controlling the pattern formation process. In this context: (i) formation of ripples at near-normal ion incidence, (ii) formation of dots at oblique ion incidence without sample rotation, (iii) transition between patterns, (iv) formation of ripples with different orientations and (v) long range ordered dot patterns will be presented and discussed.

  19. Influence of reflected primary ions and nonunity sticking coefficients on film stoichiometry during ion-beam-sputter deposition of multicomponent targets

    NASA Astrophysics Data System (ADS)

    Theirich, D.; Engemann, J.

    1991-07-01

    lon-beam-sputter deposition (IBSD) experiments of WTi thin films with a single multicomponent WTi target have been performed. The Ti content of the deposited films is generally lower than the Ti content of the target. Calculations of Ti concentrations in the deposited films show that cosputter and sticking effects at the substrates can explain the loss of Ti in the films observed experimentally. IBSD offers the possibility to vary the angle of ion beam incidence on the target Θ and the polar emission angle of the sputtered particles J7. Both angles influence the stoichiometry of the deposited films additionally. Therefore IBSD is able to partially compensate the Ti loss in the deposited films caused by cosputtering and sticking effects.

  20. Three-dimensional particle simulation of back-sputtered carbon in electric propulsion test facility

    NASA Astrophysics Data System (ADS)

    Zheng, Hongru; Cai, Guobiao; Liu, Lihui; Shang, Shengfei; He, Bijiao

    2017-03-01

    The back-sputtering deposition on thruster surface caused by ion bombardment on chamber wall material affects the performance of thrusters during the ground based electric propulsion endurance tests. In order to decrease the back-sputtering deposition, most of vacuum chambers applied in electric propulsion experiments are equipped with anti-sputtering targets. In this paper, a three-dimensional model of plume experimental system (PES) including double layer anti-sputtering target is established. Simulation cases are made to simulate the plasma environment and sputtering effects when an ion thruster is working. The particle in cell (PIC) method and direct simulation Monte Carlo (DSMC) method is used to calculate the velocity and position of particles. Yamamura's model is used to simulate the sputtering process. The distribution of sputtered anti-sputtering target material is presented. The results show that the double layer anti-sputtering target can significantly reduce the deposition on thruster surface. The back-sputtering deposition rates on thruster exit surface for different cases are compared. The chevrons on the secondary target are rearranged to improve its performance. The position of secondary target has relation with the ion beam divergence angle, and the radius of the vacuum chamber. The back-sputtering deposition rate is lower when the secondary target covers the entire ion beam.

  1. Residual stress in Ta2O5-SiO2 composite thin-film rugate filters prepared by radio frequency ion-beam sputtering.

    PubMed

    Tang, Chien-Jen; Jaing, Cheng-Chung; Lee, Kuan-Shiang; Lee, Cheng-Chung

    2008-05-01

    Ta-Si oxide composite thin-film rugate filters were prepared by radio frequency ion-beam sputtering and their residual stress and substrate deflections were measured. The residual stress and substrate deflection of these composite film rugate filters were less than that of notch filters made from a series of discrete quarter-wave layers with alternate high and low indices because of the smooth modulation of composition and no interface structure of the rugate filter.

  2. Sputter deposition of metallic thin film and directpatterning

    SciTech Connect

    Ji, L.; Chen, Y.; Jiang, X.; Ji, Q.; Leung, K.-N.

    2005-09-09

    A compact apparatus is developed for deposition of metal thin film. The system employs an RF discharge plasma source with a straight RF antenna, which is made of or covered with deposition material, serving as sputtering target at the same time. The average deposition rate of copper thin film is as high as 450nm/min. By properly allocating the metal materials on the sputtering antenna, mixture deposition of multiple metal species is achieved. Using an ion beam imprinting scheme also taking advantage of ion beam focusing technique, two different schemes of direct patterning deposition process are developed: direct depositing patterned metallic thin film and resistless ion beam sputter patterning. Preliminary experiments have demonstrated direct pattern transfer from a template with feature size of micro scale; patterns with more than 10x reduction are achieved by sputtering patterning method.

  3. Ion beam analysis, corrosion resistance and nanomechanical properties of TiAlCN/CNx multilayer grown by reactive magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Alemón, B.; Flores, M.; Canto, C.; Andrade, E.; de Lucio, O. G.; Rocha, M. F.; Broitman, E.

    2014-07-01

    A novel TiAlCN/CNx multilayer coating, consisting of nine TiAlCN/CNx periods with a top layer 0.5 μm of CNx, was designed to enhance the corrosion resistance of CoCrMo biomedical alloy. The multilayers were deposited by dc and RF reactive magnetron sputtering from Ti0.5Al0.5 and C targets respectively in a N2/Ar plasma. The corrosion resistance and mechanical properties of the multilayer coatings were analyzed and compared to CoCrMo bulk alloy. Ion beam analysis (IBA) and X-ray diffraction tests were used to measure the element composition profiles and crystalline structure of the films. Corrosion resistance was evaluated by means of potentiodynamic polarization measurements using simulated body fluid (SBF) at typical body temperature and the nanomechanical properties of the multilayer evaluated by nanoindentation tests were analyzed and compared to CoCrMo bulk alloy. It was found that the multilayer hardness and the elastic recovery are higher than the substrate of CoCrMo. Furthermore the coated substrate shows a better general corrosion resistance than that of the CoCrMo alloy alone with no observation of pitting corrosion.

  4. Characterization and application of HfO2 - SiO2 mixtures produced by ion-beam sputtering technology

    NASA Astrophysics Data System (ADS)

    Kičas, S.; BatavičiÅ«tÄ--, GintarÄ--; Juškevičius, Kestutis; Tolenis, Tomas; Drazdys, Ramutis; Buzelis, Rytis; Melninkaitis, Andrius

    2013-11-01

    In the past years the usage of mixed oxides coatings lead to an important improvement of laser damage threshold and quality of optical elements. In this study influence of post treatment procedure - ex-situ annealing - is examined in terms of quality, optical constants and laser induced damage threshold (LIDT) of mixed HfO2 and SiO2 coatings. Monolayer thin films containing different fractions of HfO2 are deposited with ion beam sputtering technology (IBS.) All samples are post annealed at different temperatures and optimal regimes are defined. Refractive index and absorption coefficient dispersion is evaluated from transmission spectra measurements. Surface roughness of all samples is characterized before and after deposition and annealing, using atomic force microscopy (AFM). Microstructural changes are identified from changes in surface topography. Further, optical resistance was characterized by 5.7 ns duration pulses for 355 nm wavelength laser radiation, performing 1-on-1 sample exposure tests with high resolution micro-focusing approach for monolayer samples and S-on-1 tests for multilayer reflectors. Morphology of damaged sites was analyzed through optical microscopy. Finally, conclusions about annealing effect for mixed HfO2 and SiO2 monolayer and multilayer coatings are made.

  5. Direct growth of Ge quantum dots on a graphene/SiO2/Si structure using ion beam sputtering deposition

    NASA Astrophysics Data System (ADS)

    Zhang, Z.; Wang, R. F.; Zhang, J.; Li, H. S.; Zhang, J.; Qiu, F.; Yang, J.; Wang, C.; Yang, Y.

    2016-07-01

    The growth of Ge quantum dots (QDs) using the ion beam sputtering deposition technique has been successfully conducted directly on single-layer graphene supported by SiO2/Si substrate. The results show that the morphology and size of Ge QDs on graphene can be modulated by tuning the Ge coverage. Charge transfer behavior, i.e. doping effect in graphene has been demonstrated at the interface of Ge/graphene. Compared with that of traditional Ge dots grown on Si substrate, the positions of both corresponding photoluminescence (PL) peaks of Ge QDs/graphene hybrid structure undergo a large red-shift, which can probably be attributed to the lack of atomic intermixing and the existence of surface states in this hybrid material. According to first-principles calculations, the Ge growth on the graphene should follow the so-called Volmer-Weber mode instead of the Stranski-Krastanow one which is observed generally in the traditional Ge QDs/Si system. The calculations also suggest that the interaction between Ge and graphene layer can be enhanced with the decrease of the Ge coverage. Our results may supply a prototype for fabricating novel optoelectronic devices based on a QDs/graphene hybrid nanostructure.

  6. Optoelectronic properties of phosphorus doped p-type ZnO films grown by dual ion beam sputtering

    NASA Astrophysics Data System (ADS)

    Sharma, Pankaj; Aaryashree, Garg, Vivek; Mukherjee, Shaibal

    2017-06-01

    We report highly conductive and stable p-type phosphorus doped ZnO (PZO) thin films fabricated by dual ion beam sputtering and subsequent thermal annealing. Hall measurements established that the annealed PZO films were p-type, which were also confirmed by typical diode-like rectifying current-voltage (I-V) characteristics of the p-PZO/n-Si heterojunction. The maximum hole concentration was evaluated to be 8.62 × 1019 cm-3 with a resistivity of 0.066 Ω cm and a mobility of 1.08 cm2/V s at room temperature. The stability of the p-type conduction was verified by Hall measurement performed again after one year of thin film fabrication resulting in a hole concentration of 3.77 × 1019 cm-3. Spectroscopic ellipsometry was employed to determine the complex dielectric function ( ɛ = ɛ 1 + i ɛ 2) of p-type PZO films in the 1.2-6.4 eV energy range by a parameterized semiconductor oscillator model. Room temperature excitonic features were identified and the critical point energy was determined by second order derivative of imaginary part of dielectric function. The line shape analysis of ɛ resulted in a red shift of the energy positions of the critical point with an increase in hole concentration.

  7. Direct growth of Ge quantum dots on a graphene/SiO2/Si structure using ion beam sputtering deposition.

    PubMed

    Zhang, Z; Wang, R F; Zhang, J; Li, H S; Zhang, J; Qiu, F; Yang, J; Wang, C; Yang, Y

    2016-07-29

    The growth of Ge quantum dots (QDs) using the ion beam sputtering deposition technique has been successfully conducted directly on single-layer graphene supported by SiO2/Si substrate. The results show that the morphology and size of Ge QDs on graphene can be modulated by tuning the Ge coverage. Charge transfer behavior, i.e. doping effect in graphene has been demonstrated at the interface of Ge/graphene. Compared with that of traditional Ge dots grown on Si substrate, the positions of both corresponding photoluminescence (PL) peaks of Ge QDs/graphene hybrid structure undergo a large red-shift, which can probably be attributed to the lack of atomic intermixing and the existence of surface states in this hybrid material. According to first-principles calculations, the Ge growth on the graphene should follow the so-called Volmer-Weber mode instead of the Stranski-Krastanow one which is observed generally in the traditional Ge QDs/Si system. The calculations also suggest that the interaction between Ge and graphene layer can be enhanced with the decrease of the Ge coverage. Our results may supply a prototype for fabricating novel optoelectronic devices based on a QDs/graphene hybrid nanostructure.

  8. High-performance 6-inch EUV mask blanks produced under real production conditions by ion-beam sputter deposition

    NASA Astrophysics Data System (ADS)

    Becker, Hans W.; Sobel, Frank; Aschke, Lutz; Renno, Markus; Krieger, Juergen; Buttgereit, Ute; Hess, Guenter; Lenzen, Frank; Knapp, Konrad; Yulin, Sergey A.; Feigl, Torsten; Kuhlmann, Thomas; Kaiser, Norbert

    2002-12-01

    EUV mask blanks consist of two thin film systems deposited on low thermal expansion 6 inch substrates (LTEM). First there is the multilayer stack with around 100 alternating layers of elements with different optical properties which are topped by a capping layer. The absorber stack which consists of a buffer and a absorber layer is next. Here a minimum absorption of EUV light of 99 % is required. The stress in both layer systems should be as low as possible. The reduction of defects to an absolute minimum is one of the main challenges. The high-reflective Mo/Si multilayer coatings were designed for normal incidence reflectivity and successfully deposited on 6-inch LTEM substrates by ion-beam sputtering. X-ray scattering, transmission electron microscopy and atomic force microscopy were used for characterization of the multilayer interfaces and the surface morphology. The results are correlated to the measured normal incidence reflectivity using synchrotron radiation at the "Physikalisch- Technischen Bundesanstalt" (PTB) refelctometer at BESSY II, Berlin, Germany. A high resolution laser scanner was used to measure the particle distribution. First multilayer defect results are presented.

  9. Study of structural and electrical properties of thin NiOx films prepared by ion beam sputtering of Ni and subsequent thermo-oxidation

    NASA Astrophysics Data System (ADS)

    Horak, P.; Lavrentiev, V.; Bejsovec, V.; Vacik, J.; Danis, S.; Vrnata, M.; Khun, J.

    2013-11-01

    Nickel oxide thin films were prepared by thermal annealing of thin Ni films (thickness ca 47 nm) deposited by ion beam sputtering. The thermal annealing was performed at 350 °C and 400 °C with elected time (1-7 hours) in a quartz furnace opened to air. During annealing the samples underwent structural changes, as well as changes of their electrical properties. The structural properties (surface morphology and occurrence of crystalline phases) were analyzed by the AFM and XRD methods, O and Ni depth concentration profiles by the NRA method, and electrical properties (sheet resistance) by the van der Pauw 4-point technique. The sheet resistance ( R S ) of the as-deposited sample was found to be 12.03 Ω/□; after open air thermal annealing at 350 °C for 1 h the value was found to be almost the same, 11.67 Ω/□. After 2 h of annealing, however, a sharp increase in the sheet resistance ( R S = 1.46 MΩ/□) was observed. At this stage the deposit formed largely oxidized Ni layer with a distinct polycrystalline structure. The sharp increase of sheet resistance was ascribed to the oxidation of the Ni layer, leaving only a smaller amount of isolated Ni particles unoxidized. Almost complete oxidation was found after 7 h of annealing at 350 °C. At 400 °C was almost complete oxidation recorded already after 1 h of annealing.

  10. Nanoscale and macroscale aluminum nitride deposition via reactive magnetron sputtering method

    NASA Astrophysics Data System (ADS)

    Zhang, Guanghai

    The growth of group III nitrides is receiving a great deal of attention due to their potential as materials for optoelectronic devices in the blue to ultraviolet spectral range. This dissertation is primarily focused on deposition of aluminum nitride thin films on both nanofibers and macroscale silicon substrates via reactive magnetron sputtering. The objectives include investigating the feasibility of coating nanofibers to prepare high quality (smooth and crystalline) nanotubes, nanofiber hetero structures and using buffer layers to improve the quality of macroscale AlN thin films. To satisfy the need of nanoscale semiconductor materials, deposition of AlN on poly (meta-phenylene isophthalamide) MPD-I nano-fiber (template) was investigated via reactive magnetron sputtering. The electrospun high-temperature nanofibers with uniform dimensions were heated up to 300°C or higher. The coatings on the fibers were continuous and their morphology and crystal structure (either hexagonal wurtzite structure or cubic zinc-blende structure) were controlled by changing the deposition conditions. After removing the fiber core with organic solvent or by pyrolysis, AlN nanotubes (hollow structures) with inner diameter of 50--100 nm were achieved. As the nanoscale building blocks, nanoscale semiconductor heterostructures with modulated composition can facilitate the generation of devices with various functions. In this work, SiO2-AlN core-shell nanofiber heterostructures with SiO2 core and AlN shell were created by electro-spinning and reactive magnetron sputtering methods. Also the AlN coating (shell) was designed with different morphologies and crystalline properties by controlling the deposition conditions. The critical operating parameters for the formation of different morphologies of AlN shells were investigated. In practice, AlN thin film materials are still widely used for microelectronic and optoelectronic devices. To investigate and develop semiconducting AlN films, the

  11. Nanosecond laser-induced damage at different initial temperatures of Ta{sub 2}O{sub 5} films prepared by dual ion beam sputtering

    SciTech Connect

    Xu, Cheng Jia, Jiaojiao; Fan, Heliang; Qiang, Yinghuai; Liu, Jiongtian; Yang, Di; Hu, Guohang; Li, Dawei

    2014-08-07

    Ta{sub 2}O{sub 5} films were deposited by dual ion beam sputtering method. The nanosecond laser-induced damage threshold (LIDT) at different initial temperatures and time of the films was investigated by an in situ high temperature laser-induced damage testing platform. It was shown that, when the initial temperature increased from 298 K to 383 K, the LIDT at 1064 nm and 12 ns significantly decreased by nearly 14%. Then the LIDT at 1064 nm and 12 ns decreased slower with the same temperature increment. Different damage morphologies were found at different initial temperatures. At low initial temperatures, it was the defects-isolated damage while at high initial temperatures it was the defects-combined damage. The theoretical calculations based on the defect-induced damage model revealed that both the significant increase of the highest temperature and the duration contributed to the different damage morphologies. With the initial temperature being increased, the thermal-stress coupling damage mechanism transformed gradually to the thermal dominant damage mechanism.

  12. Magnetization dynamics and interface studies in ion-beam sputtered Si/CoFeB(8)/MgO(4)/CoFeB(8)/Ta(5) structures

    SciTech Connect

    Raju, M.; Behera, Nilamani; Pandya, Dinesh K. Chaudhary, Sujeet

    2014-05-07

    The interface roughness, Boron distribution in bulk CoFeB and at interface, Gilbert damping constant (α), and inhomogeneous broadening in ion-beam sputtered Si/CoFeB(8)/MgO(4)/CoFeB(8)/Ta(5) structures are found to be sensitive to the MgO growth process. The ion-assist and reactive growth processes that result in sharper interfaces of width ∼0.5 nm lead to smaller α of 0.0050 ± 0.0003 and 0.0060 ± 0.0002 and inhomogeneous broadening ΔH{sub 0} of 3 ± 0.3 and 1 ± 0.3 Oe, respectively. On the other hand, the post-oxidation method results in rough interface and higher retention of Boron in CoFeB leading to higher values for α and ΔH{sub 0} as 0.0080 ± 0.0006 and 5 ± 0.3 Oe, respectively.

  13. Improving the growth of Ge/Si islands by modulating the spacing between screen and accelerator grids in ion beam sputtering deposition system

    NASA Astrophysics Data System (ADS)

    Yang, Jie; Zhao, Bo; Wang, Chong; Qiu, Feng; Wang, Rongfei; Yang, Yu

    2016-11-01

    Ge islands were fabricated on Si buffer layer by ion beam sputtering deposition with a spacing between the screen and accelerator grids of either 1 mm or 2 mm. The Si buffer layer exhibits mixed-phase microcrystallinity for samples grown with 1 mm spacing and crystallinity for those with 2 mm spacing. Ge islands are larger and less dense than those grown on the crystalline buffer because of the selective growth mechanism on the microcrystalline buffer. Moreover, the nucleation site of Ge islands formed on the crystalline Si buffer is random. Ge islands grown at different grid-to-grid gaps are characterized by two key factors, namely, divergence half angle of ion beam and crystallinity of buffer layer. High grid-to-grid spacing results in small divergence half angle, thereby enhancing the sputtering energy and redistribution of sputtered atoms. The crystalline volume fraction of the microcrystalline Si buffer was obtained based on the integrated intensity ratio of Raman peaks. The islands show decreased density with decreasing crystalline volume fraction and are difficult to observe at crystalline volume fractions lower than 72%.

  14. Characteristics of CdS: Cu Photosensitive Films Obtatined by Magnetron Sputtering Method

    NASA Astrophysics Data System (ADS)

    Guseinov, Emil; Jafarov, Maarif; Gasanov, Ilham; Nasibov, Ilgar

    1997-02-01

    In2O3-CdS sandwich structures with thickness 0,5-1,5 mm have been obtained by magnetron sputtering method on glass substrates. Investigations of dark and light conductivity, the spectrum and kinetics of photoconductivity of CdS films have been carried out. The studies of the current-voltage characteristics of In2O3-CdS have been performed based on the generalized approximate theory of injection contact phenomena in semiconductors. The volume (n0) and precontact (nc) change carrier concentration, recombination (Nrec) and trapping (Ncn) center concentration, the absorption edge and the transmission coefficient, the region and the maximum of the photocurrent spectral dependence, the life time of nonequilibrium and minority carriers have been determined. With increasing the annealed sample thickness the conductivity has been shown to decrease as L-3, and the voltage at transition from the Ohm's law to a quadratic law increases as L2. It has been found that the In2O3 contact is close to a neutral one as a methalic transparent electrode than In. The CdS films obtained by magnetron sputtering method are characterized by high reproducibility, sensitivity, electric strength (106 V/cm), high resistivity (r˜ 109-1010 Ohm. cm), optical transmission (more than 60%). The In2O3-CdS structure is useful as the basic material of an image converter.

  15. Magnetron sputtering system for coatings deposition with activation of working gas mixture by low-energy high-current electron beam

    NASA Astrophysics Data System (ADS)

    Gavrilov, N. V.; Kamenetskikh, A. S.; Men'shakov, A. I.; Bureyev, O. A.

    2015-11-01

    For the purposes of efficient decomposition and ionization of the gaseous mixtures in a system for coatings deposition using reactive magnetron sputtering, a low-energy (100-200 eV) high-current electron beam is generated by a grid-stabilized plasma electron source. The electron source utilizes both continuous (up to 20 A) and pulse-periodic mode of discharge with a self-heated hollow cathode (10-100 A; 0.2 ms; 10-1000 Hz). The conditions for initiation and stable burning of the high-current pulse discharge are studied along with the stable generation of a low-energy electron beam within the gas pressure range of 0.01 - 1 Pa. It is shown that the use of the electron beam with controllable parameters results in reduction of the threshold values both for the pressure of gaseous mixture and for the fluxes of molecular gases. Using such a beam also provides a wide range (0.1-10) of the flux density ratios of ions and sputtered atoms over the coating surface, enables an increase in the maximum pulse density of ion current from plasma up to 0.1 A, ensures an excellent adhesion, optimizes the coating structure, and imparts improved properties to the superhard nanocomposite coatings of (Ti,Al)N/a-Si3N4 and TiC/-a-C:H. Mass-spectrometric measurements of the beam-generated plasma composition proved to demonstrate a twofold increase in the average concentration of N+ ions in the Ar-N2 plasma generated by the high-current (100 A) pulsed electron beam, as compared to the dc electron beam.

  16. Sputtering yields of carbon based materials under high particle flux with low energy

    NASA Astrophysics Data System (ADS)

    Nakamura, K.; Nagase, A.; Dairaku, M.; Akiba, M.; Araki, M.; Okumura, Y.

    1995-04-01

    A new ion source which can produce high particle flux beams at low energies has been developed. This paper presents preliminary results on the sputtering yield of the carbon fiber reinforced composites (CFCs) measured with the new ion source. The sputtering yields of 1D and 2D CFCs, which are candidate materials for the divertor armour tiles, have been measured by the weight loss method under the hydrogen and deuterium particle fluxes of 2 ˜ 7 × 10 20/m 2 s at 50 ˜ 150 eV. Preferential sputtering of the matrix was observed on CFCs which included the matrix of 40 ˜ 60 w%. The energy dependence of the sputtering yields was weak. The sputtering yields of CFCs normally irradiated with deuterium beam were from 0.073 to 0.095, and were around three times larger than those with hydrogen beam.

  17. An innovative experimental setup for the measurement of sputtering yield induced by keV energy ions

    NASA Astrophysics Data System (ADS)

    Salou, P.; Lebius, H.; Benyagoub, A.; Langlinay, T.; Lelièvre, D.; Ban-d'Etat, B.

    2013-09-01

    An innovative experimental equipment allowing to study the sputtering induced by ion beam irradiation is presented. The sputtered particles are collected on a catcher which is analyzed in situ by Auger electron spectroscopy without breaking the ultra high vacuum (less than 10-9 mbar), avoiding thus any problem linked to possible contamination. This method allows to measure the angular distribution of sputtering yield. It is now possible to study the sputtering of many elements such as carbon based materials. Preliminary results are presented in the case of highly oriented pyrolytic graphite and tungsten irradiated by an Ar+ beam at 2.8 keV and 7 keV, respectively.

  18. An innovative experimental setup for the measurement of sputtering yield induced by keV energy ions.

    PubMed

    Salou, P; Lebius, H; Benyagoub, A; Langlinay, T; Lelièvre, D; Ban-d'Etat, B

    2013-09-01

    An innovative experimental equipment allowing to study the sputtering induced by ion beam irradiation is presented. The sputtered particles are collected on a catcher which is analyzed in situ by Auger electron spectroscopy without breaking the ultra high vacuum (less than 10(-9) mbar), avoiding thus any problem linked to possible contamination. This method allows to measure the angular distribution of sputtering yield. It is now possible to study the sputtering of many elements such as carbon based materials. Preliminary results are presented in the case of highly oriented pyrolytic graphite and tungsten irradiated by an Ar(+) beam at 2.8 keV and 7 keV, respectively.

  19. External-beam methods in biomedical work.

    PubMed

    Räisänen, J

    1987-04-01

    The useability of external-beam proton-induced X-ray (PIXE) and gamma-ray (PIGE) emission, backscattering spectrometry (BS), and the particle-particle method in biomedical work is demonstrated. Detection limit values obtainable by the methods for typical biomedical samples under practical conditions are given and compared. Advantages, drawbacks, and restrictions of the methods are discussed. Examples of the applications of the methods in biomedical work are given.

  20. Apparatus and method for laser beam diagnosis

    DOEpatents

    Salmon, Jr., Joseph T.

    1991-01-01

    An apparatus and method is disclosed for accurate, real time monitoring of the wavefront curvature of a coherent laser beam. Knowing the curvature, it can be quickly determined whether the laser beam is collimated, or focusing (converging), or de-focusing (diverging). The apparatus includes a lateral interferometer for forming an interference pattern of the laser beam to be diagnosed. The interference pattern is imaged to a spatial light modulator (SLM), whose output is a coherent laser beam having an image of the interference pattern impressed on it. The SLM output is focused to obtain the far-field diffraction pattern. A video camera, such as CCD, monitors the far-field diffraction pattern, and provides an electrical output indicative of the shape of the far-field pattern. Specifically, the far-field pattern comprises a central lobe and side lobes, whose relative positions are indicative of the radius of curvature of the beam. The video camera's electrical output may be provided to a computer which analyzes the data to determine the wavefront curvature of the laser beam.

  1. Apparatus and method for laser beam diagnosis

    DOEpatents

    Salmon, J.T. Jr.

    1991-08-27

    An apparatus and method are disclosed for accurate, real time monitoring of the wavefront curvature of a coherent laser beam. Knowing the curvature, it can be quickly determined whether the laser beam is collimated, or focusing (converging), or de-focusing (diverging). The apparatus includes a lateral interferometer for forming an interference pattern of the laser beam to be diagnosed. The interference pattern is imaged to a spatial light modulator (SLM), whose output is a coherent laser beam having an image of the interference pattern impressed on it. The SLM output is focused to obtain the far-field diffraction pattern. A video camera, such as CCD, monitors the far-field diffraction pattern, and provides an electrical output indicative of the shape of the far-field pattern. Specifically, the far-field pattern comprises a central lobe and side lobes, whose relative positions are indicative of the radius of curvature of the beam. The video camera's electrical output may be provided to a computer which analyzes the data to determine the wavefront curvature of the laser beam. 11 figures.

  2. Interdependence between stress, preferred orientation, and surface morphology of nanocrystalline TiN thin films deposited by dual ion beam sputtering

    SciTech Connect

    Abadias, G.; Tse, Y.Y.; Guerin, Ph.; Pelosin, V.

    2006-06-01

    To clarify the underlying mechanisms that cause the preferred orientation in TiN films, we investigated the evolution with the thickness of the texture, surface morphology, and residual stress in TiN thin films deposited by dual ion beam sputtering. The films, with thickness h ranging from 50 to 300 nm, were grown on oxidized Si substrates using a primary Ar ion beam accelerated under 1.2 kV and different voltages V{sub a} of the (Ar+N{sub 2}) assistance beam: 25, 50, and 150 V. The influence of temperature was also investigated by varying the substrate temperature T{sub s} (25-300 deg. C) during growth or by performing a postdeposition annealing. X-ray diffraction (XRD) as well as transmission electron microscopy were used to study the microstructure and changes of texture with thickness h, while x-ray reflectivity and atomic force microscopy measurements were performed to determine the surface roughness. Residual stresses were measured by XRD and analyzed using a triaxial stress model. The crystallite group method was used for a strain determination of crystallites having different fiber axis directions, i.e., when a mixed texture exists. The surface roughness is found to increase with V{sub a} and T{sub s} due to the resputtering effect of the film surface. XRD reveals that for a small thickness (h{approx}50 nm) the TiN films exhibit a strong (002) texture independent of V{sub a}. For a larger thickness (100

  3. Interdependence between stress, preferred orientation, and surface morphology of nanocrystalline TiN thin films deposited by dual ion beam sputtering

    NASA Astrophysics Data System (ADS)

    Abadias, G.; Tse, Y. Y.; Guérin, Ph.; Pelosin, V.

    2006-06-01

    To clarify the underlying mechanisms that cause the preferred orientation in TiN films, we investigated the evolution with the thickness of the texture, surface morphology, and residual stress in TiN thin films deposited by dual ion beam sputtering. The films, with thickness h ranging from 50 to 300 nm, were grown on oxidized Si substrates using a primary Ar ion beam accelerated under 1.2 kV and different voltages Va of the (Ar+N2) assistance beam: 25, 50, and 150 V. The influence of temperature was also investigated by varying the substrate temperature Ts (25-300 °C) during growth or by performing a postdeposition annealing. X-ray diffraction (XRD) as well as transmission electron microscopy were used to study the microstructure and changes of texture with thickness h, while x-ray reflectivity and atomic force microscopy measurements were performed to determine the surface roughness. Residual stresses were measured by XRD and analyzed using a triaxial stress model. The crystallite group method was used for a strain determination of crystallites having different fiber axis directions, i.e., when a mixed texture exists. The surface roughness is found to increase with Va and Ts due to the resputtering effect of the film surface. XRD reveals that for a small thickness (h~50 nm) the TiN films exhibit a strong (002) texture independent of Va. For a larger thickness (100

  4. Nanodot and nanocrystal pattern formation and luminescent properties of BiB 3O 6 glasses after moderate energy ion beam sputtering

    NASA Astrophysics Data System (ADS)

    Plaza, J. L.; Martínez, O.; Hortelano, V.; Bensalah, H.; Diéguez, E.

    2012-02-01

    In this work we study the nanopatterning effect on the surface of BIBO glasses by means of Ion Beam Sputtering (IBS), using moderate energy (<5 kV) Ar ions. The analysis, changing the energy of the Ar ions, has demonstrated the formation of nanodots, nanorripples, and nanopyramids. We have also analysed the dependence of the nanopatterns on the sample thickness for the same experimental conditions. The sizes of the nanodots have been analysed by AFM, while their optical properties studied by means of μ-Raman/μ-photoluminescence techniques.

  5. Fabrication of ultrathin Ni-Zn ferrite films using electron cyclotron resonance sputtering method

    SciTech Connect

    Tanaka, Terumitsu; Kurisu, Hiroki; Matsuura, Mitsuru; Shimosato, Yoshihiro; Okada, Shigenobu; Oshiro, Kazunori; Fujimori, Hirotaka; Yamamoto, Setsuo

    2006-04-15

    Well-crystallized Ni-Zn ferrite (Ni{sub 0.4}Zn{sub 0.6}Fe{sub 2}O{sub 4}) highly oriented ultrathin films were obtained at a substrate temperature of 200 deg. C by a reactive sputtering method utilizing electron cyclotron resonance microwave plasma, which is very effective to crystallize oxide or nitride materials without heat treatment. Thin films of Ni-Zn ferrite deposited on a MgO (100) underlayer showed an intense X-ray-diffraction peak of (400) from the Ni-Zn ferrite as compared to similar films deposited directly onto thermally oxidized Si substrates. A 1.5-nm-thick Ni-Zn ferrite film, which corresponds to twice the lattice constant for bulk Ni-Zn ferrite, crystallized on a MgO (100) underlayer.

  6. Corrosion resistance for biomaterial applications of TiO2 films deposited on titanium and stainless steel by ion-beam-assisted sputtering.

    PubMed

    Pan, J; Leygraf, C; Thierry, D; Ektessabi, A M

    1997-06-05

    The high corrosion resistance and good biocompatibility of titanium and its alloys are due to a thin passive film that consists essentially of titanium dioxide. There is increasing evidence, however, that under certain conditions extensive titanium release may occur in vivo. An ion-beam-assisted sputtering deposition technique has been used to deposit thick and dense TiO2 films on titanium and stainless steel surfaces. In this study, using the following measurements these TiO2 films have been investigated in a phosphate-buffered saline solution: (1) open-circuit potential versus time of exposure, (2) electrochemical impedance spectroscopy, (3) potentiodynamic polarization, and (4) Mott-Schottky plot. A higher electrical film resistance, lower passive current density, and lower donor density (in the order of 10(15) cm-3) have been measured for the sputter-deposited oxide film on titanium in contrast to the naturally formed passive oxide film on titanium (donor density in the order of 10(20) cm-3). The improved corrosion protection of the sputter-deposited oxide film can be explained by a low defect concentration and, consequently, by a slow mass transport process across the film. As opposed to TiO2 on titanium, a deviation from normal n-type semiconducting Mott-Schottky behavior was observed for TiO2 on stainless steel.

  7. The influence of Atomic Oxygen on the Figure of Merit of Indium Tin Oxide thin Films grown by reactive Dual Ion Beam Sputtering

    NASA Astrophysics Data System (ADS)

    Geerts, Wilhelmus; Simpson, Nelson; Woodall, Allen; Compton, Maclyn

    2014-03-01

    Indium Tin Oxide (ITO) is a transparent conducting oxide that is used in flat panel displays and optoelectronics. Highly conductive and transparent ITO films are normally produced by heating the substrate to 300 Celsius during deposition excluding plastics to be used as a substrate material. We investigated whether high quality ITO films can be sputtered at room temperature using atomic instead of molecular oxygen. The films were deposited by dual ion beam sputtering (DIBS). During deposition the substrate was exposed to a molecular or an atomic oxygen flux. Microscope glass slides and silicon wafers were used as substrates. A 29 nm thick SIO2 buffer layer was used. Optical properties were measured with a M2000 Woollam variable angle spectroscopic ellipsometer. Electrical properties were measured by linear four point probe using a Jandel 4pp setup employing silicon carbide electrodes, high input resistance, and Keithley low bias current buffer amplifiers. The figure of merit (FOM), i.e. the ratio of the conductivity and the average optical absorption coefficient (400-800 nm), was calculated from the optical and electric properties and appeared to be 1.2 to 5 times higher for the samples sputtered with atomic oxygen. The largest value obtained for the FOM was 0.08 reciprocal Ohms. The authors would like to thank the Research Corporation for Financial Support.

  8. Impact tests of the tungsten coated stainless steels prepared by using magnetron sputtering with ion beam mixing or electron beam alloying treatment

    NASA Astrophysics Data System (ADS)

    Zou, Yu; Zhan, Chang-Yong; Yang, Bin; Wu, Jian-Chun

    2013-05-01

    Tungsten films were deposited on stainless steel (SS) with ion beam mixing (IBM) or electron beam alloying (EBA) treatment. The ductile-brittle transition behaviors of the specimens were investigated by means of instrumented Charpy impact test at a series of temperature, and SEM was used to observe the morphology of the cross section. Impact tests show that different treatment methods with W films do not have much influence on crack initiation, while EBA treatment with W films can more effectively prevent crack propagation, namely improve the impact toughness of SS than using IBM treatment. The reason that caused this difference was discussed.

  9. Deposition of ScAIN thin film using RF-sputtering method

    NASA Astrophysics Data System (ADS)

    Fujii, Satoshi; Kadena, Hayate; Hashimoto, Ken-ya

    2017-07-01

    High-Sc-content ScAlN thin films have attracted significant attention because of their strong piezoelectric properties. Akiyama et al. found that the piezoelectricity of ScAlN thin films increased monotonically with increasing Sc concentration, r. The piezoelectricity reached a maximum at r = 43 at%, at which the piezoelectric coefficient, d33, was five times that of pure AlN. The Akiyama group showed that the d33 of a ScAlN thin film with a high Sc content and wurtzite structure would be much larger than that of the 43 at% Sc film, as calculated by first-principles methods. However, ScAlN thin films typically exhibit a rock-salt rather than a wurtzite structure with increasing Sc content, because ScN has a rock-salt structure at thermal equilibrium. In this report, we studied the deposition of ScAlN thin films using a RF-sputtering method, and it's characterization to clarify the deposition conditions needed for films with high piezoelectricity. The result of micro-Raman spectroscopy measurement shows that, as the Sc content of the ScAlN thin film increases, the peak at ˜800 nm-1 of the A1 mode, due to Sc atoms in the Al sites of the wurtzite structure, shifts to lower frequency for these sputtering conditions. This means that Sc atoms occupy Al sites in the wurtzite structure in the thin film until the Sc content reaches 33%. This phenomenon was also observed for AlGaN thin films. The peak near 700 cm-1 for the ScN thin film, ascribed to a cubic structure, is deformed with increasing Al content.

  10. Method for producing uranium atomic beam source

    DOEpatents

    Krikorian, Oscar H.

    1976-06-15

    A method for producing a beam of neutral uranium atoms is obtained by vaporizing uranium from a compound UM.sub.x heated to produce U vapor from an M boat or from some other suitable refractory container such as a tungsten boat, where M is a metal whose vapor pressure is negligible compared to that of uranium at the vaporization temperature. The compound, for example, may be the uranium-rhenium compound, URe.sub.2. An evaporation rate in excess of about 10 times that of conventional uranium beam sources is produced.

  11. Ultraviolet optical and microstructural properties of MgF2 and LaF3 coatings deposited by ion-beam sputtering and boat and electron-beam evaporation.

    PubMed

    Ristau, Detlev; Günster, Stefan; Bosch, Salvador; Duparré, Angela; Masetti, Enrico; Ferré-Borrull, Josep; Kiriakidis, George; Peiró, Francesca; Quesnel, Etienne; Tikhonravov, Alexander

    2002-06-01

    Single layers of MgF2 and LaF3 were deposited upon superpolished fused-silica and CaF2 substrates by ion-beam sputtering (IBS) as well as by boat and electron beam (e-beam) evaporation and were characterized by a variety of complementary analytical techniques. Besides undergoing photometric and ellipsometric inspection, the samples were investigated at 193 and 633 nm by an optical scatter measurement facility. The structural properties were assessed with atomic-force microscopy, x-ray diffraction, TEM techniques that involved conventional thinning methods for the layers. For measurement of mechanical stress in the coatings, special silicon substrates were coated and analyzed. The dispersion behavior of both deposition materials, which was determined on the basis of various independent photometric measurements and data reduction techniques, is in good agreement with that published in the literature and with the bulk properties of the materials. The refractive indices of the MgF2 coatings ranged from 1.415 to 1.440 for the wavelength of the ArF excimer laser (193 nm) and from 1.435 to 1.465 for the wavelength of the F2 excimer laser (157 nm). For single layers of LaF3 the refractive indices extended from 1.67 to 1.70 at 193 nm to approximately 1.80 at 157 nm. The IBS process achieves the best homogeneity and the lowest surface roughness values (close to 1 nm(rms)) of the processes compared in the joint experiment. In contrast to MgF2 boat and e-beam evaporated coatings, which exhibit tensile mechanical stress ranging from 300 to 400 MPa, IBS coatings exhibit high compressive stress of as much as 910 MPa. A similar tendency was found for coating stress in LaF3 single layers. Experimental results are discussed with respect to the microstructural and compositional properties as well as to the surface topography of the coatings.

  12. Low temperature Ti-Si-C thin film deposition by ion beam assisted methods

    NASA Astrophysics Data System (ADS)

    Twardowska, Agnieszka; Rajchel, Boguslaw; Jaworska, Lucyna

    2010-11-01

    Thin, multiphase Ti-Si-C coatings were formed by IBSD or by IBAD methods on AISI 316L steel substrates in room temperature, using single Ti3SiC2 target. In those methods the TiXSiCY coatings were formed from the flux of energetic atoms and ions obtained by ion sputtering of the Ti3SiC2 compound sample. As sputtering beam the beam of Ar+ ions at energy of 15keV was applied. In the IBAD method the dynamically formed coatings were additionally bombarded by beam of Ar+ ions at energy of 15keV. The ion beams parameters were obtained by using Monte Carlo computer simulations. The morphology (SEM, TEM), chemical (EDS/EDX) and phase composition (XRD) examinations of formed coatings were provided as well as confocal Raman microspectroscopy. Analyzed coatings were relatively thin (150nm-1μm), flat and dense. XRD analysis indicated in amorphous TiSi, the traces of Ti5Si3 and other phases from Ti-Si-C system (TiSi, TiSi2,Ti3SiC2). For chemical bonds investigation, the laser beam with length of 532nm was used. Those analyses were performed in the low (LR) or in high (HR) resolution modes in room temperature and in 4000C. In the HR mode the spectral resolution was close to 2 cm-1. In Raman spectra peaks at: 152cm-1, 216cm-1, 278cm-1, 311 cm-1, 608cm-1, 691cm-1 were recorded. Nanoindentation tests were done on coated and uncoated substrates with diamond, Berkovich-type indenter. Vickers hardness HIT and reduced elastic modulus EIT were calculated using Olivier& Pharr method. HIT for coated substrates was in the range 2.7 to 5.3 GPa, EIT was 160 GPa.

  13. Monte Carlo simulations of nanoscale Ne+ ion beam sputtering: investigating the influence of surface effects, interstitial formation, and the nanostructural evolution

    NASA Astrophysics Data System (ADS)

    Mahady, Kyle; Tan, Shida; Greenzweig, Yuval; Livengood, Richard; Raveh, Amir; Rack, Philip

    2017-01-01

    We present an updated version of our Monte-Carlo based code for the simulation of ion beam sputtering. This code simulates the interaction of energetic ions with a target, and tracks the cumulative damage, enabling it to simulate the dynamic evolution of nanostructures as material is removed. The updated code described in this paper is significantly faster, permitting the inclusion of new features, namely routines to handle interstitial atoms, and to reduce the surface energy as the structure would otherwise develop energetically unfavorable surface porosity. We validate our code against the popular Monte-Carlo code SRIM-TRIM, and study the development of nanostructures from Ne+ ion beam milling in a copper target.

  14. Kinetics of the electron beam induced crystallization of amorphous ZrO2 films obtained via ion-plasma and laser sputtering

    NASA Astrophysics Data System (ADS)

    Bagmut, A. G.; Beresnev, V. M.

    2017-01-01

    The structure and electron beam induced crystallization kinetics of amorphous ZrO2 films obtained via ion-plasma and laser sputtering were compared. The studies were performed by electron diffraction and transmission electron microscopy with recording video films in situ. The effect of an electron beam on an amorphous film in a vacuum was accompanied by the formation of zirconia microcrystals with an FCC lattice. For laser evaporation, the density of crystallization nuclei was β 109 cm-2, and the characteristic length unit was D 0 0.48 μm. For ion-plasma evaporation, β 1010 cm-2, and D 0 0.06 μm. The kinetic curves of the crystallization of amorphous films were analyzed using the β-variant of the Kolmogorov model as a basis.

  15. Ion-beam sputtering deposition and magnetoelectric properties of layered heterostructures (FM/PZT/FM)n, where FM - Co or Ni78Fe22

    NASA Astrophysics Data System (ADS)

    Stognij, Alexander; Novitskii, Nikolai; Sazanovich, Andrei; Poddubnaya, Nadezhda; Sharko, Sergei; Mikhailov, Vladimir; Nizhankovski, Viktor; Dyakonov, Vladimir; Szymczak, Henryk

    2013-08-01

    Magnetoelectric properties of layered heterostructures (FM/PZT/FM)n (n≤ 3) obtained by ion-beam sputtering deposition of ferromagnetic metal (FM), where FM is the cobalt (Co) or permalloy Ni78Fe22, onto ferroelectric ceramic based on lead zirconate titanate (PZT) have been studied. The polished ferroelectric plates in thickness from 400 to 20 μm were subjected to finished treatment by ion-beam sputtering. After plasma activation they were covered by the ferromagnetic films from 1 to 6 μm in thickness. Enhanced characteristics of these structures were reached by means of both the thickness optimization of ferroelectric and ferromagnetic layers and obtaining of ferromagnetic/ferroelectric interfaces being free from defects and foreign impurities. Assuming on the basis of analysis of elastic stresses in the ferromagnetic film that the magnetoelectric effect forms within ferromagnetic/ferroelectric interface, the structures with 2-3 ferromagnetic layers were obtained. In layered heterostructure (Py/PZT/Py)3, the optimal thickness of ferromagnetic film was 2 μm, and outer and inner ferroelectric layers had 20 μm and 80 μm in thickness, respectively. For such structure the maximal magnetoelectric voltage coefficient of 250 mV/(cm Oe) was reached at a frequency 100 Hz in magnetic field of 0.25 T at room temperature. The structures studied can serve as energy-independent elements detecting the change of magnetic or electric fields in electronic devices based on magnetoelectric effect.

  16. A novel approach for the characterization of a bilayer of phenyl-c71-butyric-acid-methyl ester and pentacene using ultraviolet photoemission spectroscopy and argon gas cluster ion beam sputtering process

    SciTech Connect

    Yun, Dong-Jin; Chung, JaeGwan; Jung, Changhoon; Chung, Yeonji; Kim, SeongHeon; Lee, Seunghyup; Kim, Ki-Hong; Han, Hyouksoo; Park, Gyeong-Su; Park, SungHoon

    2013-09-07

    The material arrangement and energy level alignment of an organic bilayer comprising of phenyl-c71-butyric-acid-methyl ester (PCBM-71) and pentacene were studied using ultraviolet photoelectron spectroscopy (UPS) and the argon gas cluster ion beam (GCIB) sputtering process. Although there is a small difference in the full width at half maximum of the carbon C 1s core level peaks and differences in the oxygen O 1s core levels of an X-ray photoemission spectroscopy spectra, these differences are insufficient to clearly distinguish between PCBM-71 and pentacene layers and to classify the interface and bulk regions. On the other hand, the valence band structures in the UPS spectra contain completely distinct configurations for the PCBM-71 and pentacene layers, even when they have similar atomic compositions. According to the valence band structures of the PCBM-71/pentacene/electrodes, the highest unoccupied molecular orbital (HOMO) region of pentacene is at least 0.8 eV closer to the Fermi level than that of PCBM-71 and it does not overlap with any of the chemical states in the valence band structure of PCBM-71. Therefore, by just following the variations in the area of the HOMO region of pentacene, the interface/bulk regions of the PCBM/pentacene layers were distinctly categorized. Besides, the variation of valence band structures as a function of the Ar GCIB sputtering time fully corroborated with the surface morphologies observed in the atomic force microscope images. In summary, we believe that the novel approach, which involves UPS analysis in conjunction with Ar GCIB sputtering, can be one of the best methods to characterize the material distribution and energy level alignments of stacks of organic layers.

  17. Effective beam method for element concentrations

    PubMed Central

    Tolhurst, Thomas; Barbi, Mauricio; Tokaryk, Tim

    2015-01-01

    There is a great diversity of research being conducted at synchrotron facilities around the world and a diverse set of beamlines to accommodate this research. Time is a precious commodity at synchrotron facilities; therefore, methods that can maximize the time spent collecting data are of value. At the same time the incident radiation spectrum, necessary for some research, may not be known on a given beamline. A preliminary presentation of a method applicable to X-ray fluorescence spectrocopic analyses that overcomes the lack of information about the incident beam spectrum that addresses both of these concerns is given here. The method is equally applicable for other X-ray sources so long as local conditions are considered. It relies on replacing the polychromatic spectrum in a standard fundamental parameters analysis with a set of effective monochromatic photon beams. A beam is associated with each element and can be described by an analytical function allowing extension to elements not included in the necessary calibration measurement(s). PMID:25723941

  18. Beam imaging sensor and method for using same

    DOEpatents

    McAninch, Michael D.; Root, Jeffrey J.

    2017-01-03

    The present invention relates generally to the field of sensors for beam imaging and, in particular, to a new and useful beam imaging sensor for use in determining, for example, the power density distribution of a beam including, but not limited to, an electron beam or an ion beam. In one embodiment, the beam imaging sensor of the present invention comprises, among other items, a circumferential slit that is either circular, elliptical or polygonal in nature. In another embodiment, the beam imaging sensor of the present invention comprises, among other things, a discontinuous partially circumferential slit. Also disclosed is a method for using the various beams sensor embodiments of the present invention.

  19. Method for producing an atomic oxygen beam

    NASA Technical Reports Server (NTRS)

    Outlaw, Ronald A. (Inventor)

    1989-01-01

    A method for producing an atomic oxygen beam is provided by the present invention. First, a material 10' is provided which dissociates molecular oxygen and dissolves atomic oxygen into its bulk. Next, molecular oxygen is exposed to entrance surface 11' of material 10'. Next, material 10' is heated by heater 17' to facilitate the permeation of atomic oxygen through material 10' to the UHV side 12'. UHV side 12' is interfaced with an ultra-high vacuum (UHV) environment provided by UHV pump 15'. The atomic oxygen on the UHV side 12' is excited to a non-binding state by exciter 14' thus producing the release of atomic oxygen to form an atomic oxygen beam 35'.

  20. Fabrication of sharp tungsten-coated tip for atomic force microscopy by ion-beam sputter deposition.

    PubMed

    Kinoshita, Yukinori; Naitoh, Yoshitaka; Li, Yan Jun; Sugawara, Yasuhiro

    2011-11-01

    Tungsten (W) is significantly suitable as a tip material for atomic force microscopy (AFM) because its high mechanical stiffness enables the stable detection of tip-sample interaction forces. We have developed W sputter-coating equipment to compensate the drawbacks of conventional Si cantilever tips used in AFM measurements. By employing an ion gun commonly used for sputter cleaning of a cantilever tip, the equipment is capable of depositing conductive W films in the preparation chamber of a general ultrahigh vacuum (UHV)-AFM system without the need for an additional chamber or transfer system. This enables W coating of a cantilever tip immediately after sputter cleaning of the tip apex and just before the use in AFM observations. The W film consists of grain structures, which prevent tip dulling and provide sharpness (<3 nm in radius of curvature at the apex) comparable to that of the original Si tip apex. We demonstrate that in non-contact (NC)-AFM measurement, a W-coated Si tip can clearly resolve the atomic structures of a Ge(001) surface without any artifacts, indicating that, as a force sensor, the fabricated W-coated Si tip is superior to a bare Si tip. © 2011 American Institute of Physics

  1. Dual-ring scattering method for proton beam spreading

    NASA Astrophysics Data System (ADS)

    Takada, Yoshihisa

    1994-01-01

    A dual-ring double scattering method has been proposed to obtain a large uniform beam field in the proton rotating gantry used for cancer treatment. This method makes it possible to reduce the distance for beam field formation and to use the larger part of the beam. A flat beam field can be formed at a position on the patient by scattering the beam more strongly at the inner part of the dual-ring second scatterer than the outer part.

  2. Mass spectrometer and methods of increasing dispersion between ion beams

    DOEpatents

    Appelhans, Anthony D.; Olson, John E.; Delmore, James E.

    2006-01-10

    A mass spectrometer includes a magnetic sector configured to separate a plurality of ion beams, and an electrostatic sector configured to receive the plurality of ion beams from the magnetic sector and increase separation between the ion beams, the electrostatic sector being used as a dispersive element following magnetic separation of the plurality of ion beams. Other apparatus and methods are provided.

  3. Method for sputtering a PIN amorphous silicon semi-conductor device having partially crystallized P and N-layers

    DOEpatents

    Moustakas, Theodore D.; Maruska, H. Paul

    1985-07-09

    A high efficiency amorphous silicon PIN semiconductor device having partially crystallized (microcrystalline) P and N layers is constructed by the sequential sputtering of N, I and P layers and at least one semi-transparent ohmic electrode. The method of construction produces a PIN device, exhibiting enhanced electrical and optical properties, improved physical integrity, and facilitates the preparation in a singular vacuum system and vacuum pump down procedure.

  4. Crystallinity control of SiC grown on Si by sputtering method

    NASA Astrophysics Data System (ADS)

    Watanabe, Ryosuke; Tsukamoto, Takahiro; Kamisako, Koichi; Suda, Yoshiyuki

    2017-04-01

    We investigated a method of controlling the crystallinity of an n-type SiC (n-SiC) layer grown on a p-type 4°-off-axis Si(1 1 1) (p-Si) substrate by our sputtering method for use as SiC/Si devices. An n-SiC layer grown on p-Si at 810 °C exhibits columnar 3C-SiC(1 1 1) crystal growth. However, it contains many defects near the n-SiC/p-Si interface. We then propose a method in which a 10-nm-thick nondoped SiC (i-SiC) interlayer is grown at a low temperature of 640 °C prior to the growth of the n-SiC layer at 810 °C, which results in a decrease in the number of defects at the SiC/p-Si interface and an intensive increase in the crystallinity of the n-SiC, compared with that of n-SiC grown at 810 °C without the interlayer, probably via effective interlayer reconstruction and an enhancement in the crystallinity of the i-SiC interlayer itself during the n-SiC growth. Furthermore, the n-SiC/i-SiC-interlayer/p-Si structure was applied as a Si-based solar cell and the energy conversion efficiency of the n-SiC/p-Si solar cell effectively increased with the insertion of the i-SiC interlayer.

  5. Formation of (Ti,Al)N/Ti{sub 2}AlN multilayers after annealing of TiN/TiAl(N) multilayers deposited by ion beam sputtering

    SciTech Connect

    Dolique, V.; Jaouen, M.; Cabioc'h, T.; Pailloux, F.; Guerin, Ph.; Pelosin, V.

    2008-04-15

    By using ion beam sputtering, TiN/TiAl(N) multilayers of various modulation wavelengths ({lambda}=8, 13, and 32 nm) were deposited onto silicon substrates at room temperature. After annealing at 600 deg. C in vacuum, one obtains for {lambda}=13 nm a (Ti,Al)N/Ti{sub 2}AlN multilayer as it is evidenced from x-ray diffraction, high resolution transmission electron microscopy, and energy filtered electron imaging experiments. X-ray photoelectron spectroscopy (XPS) experiments show that the as-deposited TiAl sublayers contain a noticeable amount of nitrogen atoms which mean concentration varies with the period {lambda}. They also evidenced the diffusion of aluminum into TiN sublayers after annealing. Deduced from these observations, we propose a model to explain why this solid-state phase transformation depends on the period {lambda} of the multilayer.

  6. Fabrication and characterization of the electrical and optical properties of n-type thin film transparent conducting oxides deposited by neutralized ion beam sputtering and pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Vanderford, John D.

    Transparent conducting oxides have become a fundamental electronic material for numerous current technologies and are optimally deposited as a uniform thin film with low electrical resistivity and high optical transmission. The purpose of this study is to characterize the electrical and optical characteristics of three TCO: Indium Tin Oxide (ITO) (95%, 5%), Zinc Oxide (ZnO), and Aluminum doped Zinc Oxide (AZO) (98%, 2%). The deposition techniques of neutralized ion beam sputtering and pulsed laser deposition will be investigated. ITO will be deposited from commercially available sintered targets whereas ZnO and AZO will be deposited from powder pressed targets. The results have shown that AZO deposit AZO from a powder pressed target with comparable electrical and optical properties to that of ITO deposited from a sintered target.

  7. Influence of in-situ annealing ambient on p-type conduction in dual ion beam sputtered Sb-doped ZnO thin films

    NASA Astrophysics Data System (ADS)

    Pandey, Sushil Kumar; Kumar Pandey, Saurabh; Awasthi, Vishnu; Gupta, M.; Deshpande, U. P.; Mukherjee, Shaibal

    2013-08-01

    Sb-doped ZnO (SZO) films were deposited on c-plane sapphire substrates by dual ion beam sputtering deposition system and subsequently annealed in-situ in vacuum and in various proportions of O2/(O2 + N2)% from 0% (N2) to 100% (O2). Hall measurements established all SZO films were p-type, as was also confirmed by typical diode-like rectifying current-voltage characteristics from p-ZnO/n-ZnO homojunction. SZO films annealed in O2 ambient exhibited higher hole concentration as compared with films annealed in vacuum or N2 ambient. X-ray photoelectron spectroscopic analysis confirmed that Sb5+ states were more preferable in comparison to Sb3+ states for acceptor-like SbZn-2VZn complex formation in SZO films.

  8. Blue electroluminescence from Sb-ZnO/Cd-ZnO/Ga-ZnO heterojunction diode fabricated by dual ion beam sputtering.

    PubMed

    Pandey, Sushil Kumar; Awasthi, Vishnu; Verma, Shruti; Mukherjee, Shaibal

    2014-12-15

    p-type Sb-doped ZnO/i-CdZnO/n-type Ga-doped ZnO was grown by dual ion beam sputtering deposition system. Current-voltage characteristics of the heterojunction showed a diode-like rectifying behavior with a turn-on voltage of ~5 V. The diode yielded blue electroluminescence emissions at around 446 nm in forward biased condition at room temperature. The emission intensity increased with the increase of the injection current. A red shifting of the emission peak position was observed with the increment of ambient temperature, indicating a change of band gap of the CdZnO active layer with temperature in low-temperature measurement.

  9. Influence of in-situ annealing ambient on p-type conduction in dual ion beam sputtered Sb-doped ZnO thin films

    SciTech Connect

    Pandey, Sushil Kumar; Kumar Pandey, Saurabh; Awasthi, Vishnu; Mukherjee, Shaibal; Gupta, M.; Deshpande, U. P.

    2013-08-12

    Sb-doped ZnO (SZO) films were deposited on c-plane sapphire substrates by dual ion beam sputtering deposition system and subsequently annealed in-situ in vacuum and in various proportions of O{sub 2}/(O{sub 2} + N{sub 2})% from 0% (N{sub 2}) to 100% (O{sub 2}). Hall measurements established all SZO films were p-type, as was also confirmed by typical diode-like rectifying current-voltage characteristics from p-ZnO/n-ZnO homojunction. SZO films annealed in O{sub 2} ambient exhibited higher hole concentration as compared with films annealed in vacuum or N{sub 2} ambient. X-ray photoelectron spectroscopic analysis confirmed that Sb{sup 5+} states were more preferable in comparison to Sb{sup 3+} states for acceptor-like Sb{sub Zn}-2V{sub Zn} complex formation in SZO films.

  10. Development of W/C soft x-ray multilayer mirror by ion beam sputtering (IBS) system for below 50A wavelength

    SciTech Connect

    Biswas, A.; Bhattacharyya, D.

    2012-06-25

    A home-made Ion Beam Sputtering (IBS) system has been developed in our laboratory. Using the IBS system single layer W and single layer C film has been deposited at 1000eV Ar ion energy and 10mA ion current. The W-film has been characterized by grazing Incidence X-ray reflectrometry (GIXR) technique and Atomic Force Microscope technique. The single layer C-film has been characterized by Spectroscopic Ellipsometric technique. At the same deposition condition 25-layer W/C multilayer film has been deposited which has been designed for using as mirror at 30 Degree-Sign grazing incidence angle around 50A wavelength. The multilayer sample has been characterized by measuring reflectivity of CuK{alpha} radiation and soft x-ray radiation around 50A wavelength.

  11. Characterization of ion beam sputtered deposited W/Si multilayers by grazing incidence x-ray diffraction and x-ray reflectivity technique

    SciTech Connect

    Dhawan, Rajnish Rai, Sanjay

    2016-05-23

    W/Si multilayers four samples have been deposited on silicon substrate using ion beam sputtering system. Thickness of tungsten (W) varies from around 10 Å to 40 Å while the silicon (Si) thickness remains constant at around 30 Å in multilayers [W-Si]{sub x4}. The samples have been characterized by grazing incidence X-ray diffraction (GIXRD) and X-ray reflectivity technique (XRR). GIXRD study shows the crystalline behaviour of W/Si multilayer by varying W thickness and it is found that above 20 Å the W film transform from amorphous to crystalline phase and X-ray reflectivity data shows that the roughnesses of W increases on increasing the W thicknesses in W/Si multilayers.

  12. Stress induced growth of Sn nanowires in a single step by sputtering method

    SciTech Connect

    Yadav, A. Kothari, D. C.; Patel, N.; Miotello, A.

    2015-06-24

    Sn nanowires in aluminum film have been synthesized in a single step by co-sputtering of Al and Sn targets. Due to immiscibility of Sn and Al, co-sputtering leads to generation of stress in the composite film. In order to attain thermodynamic equilibrium, Sn separates from Al and diffuses towards the grain boundaries. External perturbation due to ambient atmosphere leads to corrosion at the grain boundaries forming pits which provide path for Sn to evolve. Owing to this, extrusion of Sn nanowires from Al film occurs to release the residual stress in the film.

  13. Large Area Microcorrals and Cavity Formation on Cantilevers using a Focused Ion Beam

    SciTech Connect

    Saraf, Laxmikant V.; Britt, David W.

    2011-09-14

    We utilize focused ion beam (FIB) to explore various sputtering parameters to form large area microcorrals and cavities on cantilevers. Microcorrals were rapidly created by modifying ion beam blur and overlaps. Modification in FIB sputtering parameters affects the periodicity and shape of corral microstructure. Cantilever deflections show ion beam amorphization effects as a function of sputtered area and cantilever base cavities with or without side walls. The FIB sputtering parameters address a method for rapid creation of a cantilever tensiometer with integrated fluid storage and delivery.

  14. Growth of Co2FeAl Heusler alloy thin films on Si(100) having very small Gilbert damping by Ion beam sputtering

    PubMed Central

    Husain, Sajid; Akansel, Serkan; Kumar, Ankit; Svedlindh, Peter; Chaudhary, Sujeet

    2016-01-01

    The influence of growth temperature Ts (300–773 K) on the structural phase ordering, static and dynamic magnetization behaviour has been investigated in ion beam sputtered full Heusler alloy Co2FeAl (CFA) thin films on industrially important Si(100) substrate. The B2 type magnetic ordering is established in these films based on the clear observation of the (200) diffraction peak. These ion beam sputtered CFA films possess very small surface roughness of the order of subatomic dimensions (<3 Å) as determined from the fitting of XRR spectra and also by AFM imaging. This is supported by the occurrence of distinct Kiessig fringes spanning over the whole scanning range (~4°) in the x-ray reflectivity (XRR) spectra. The Gilbert damping constant α and effective magnetization 4πMeff are found to vary from 0.0053 ± 0.0002 to 0.0015 ± 0.0001 and 13.45 ± 00.03 kG to 14.03 ± 0.04 kG, respectively. These Co2FeAl films possess saturation magnetization ranging from 4.82 ± 0.09 to 5.22 ± 0.10 μB/f.u. consistent with the bulk L21-type ordering. A record low α-value of 0.0015 is obtained for Co2FeAl films deposited on Si substrate at Ts ~ 573 K. PMID:27357004

  15. Growth of Co2FeAl Heusler alloy thin films on Si(100) having very small Gilbert damping by Ion beam sputtering

    NASA Astrophysics Data System (ADS)

    Husain, Sajid; Akansel, Serkan; Kumar, Ankit; Svedlindh, Peter; Chaudhary, Sujeet

    2016-06-01

    The influence of growth temperature Ts (300–773 K) on the structural phase ordering, static and dynamic magnetization behaviour has been investigated in ion beam sputtered full Heusler alloy Co2FeAl (CFA) thin films on industrially important Si(100) substrate. The B2 type magnetic ordering is established in these films based on the clear observation of the (200) diffraction peak. These ion beam sputtered CFA films possess very small surface roughness of the order of subatomic dimensions (<3 Å) as determined from the fitting of XRR spectra and also by AFM imaging. This is supported by the occurrence of distinct Kiessig fringes spanning over the whole scanning range (~4°) in the x-ray reflectivity (XRR) spectra. The Gilbert damping constant α and effective magnetization 4πMeff are found to vary from 0.0053 ± 0.0002 to 0.0015 ± 0.0001 and 13.45 ± 00.03 kG to 14.03 ± 0.04 kG, respectively. These Co2FeAl films possess saturation magnetization ranging from 4.82 ± 0.09 to 5.22 ± 0.10 μB/f.u. consistent with the bulk L21-type ordering. A record low α-value of 0.0015 is obtained for Co2FeAl films deposited on Si substrate at Ts ~ 573 K.

  16. Magnetically attached sputter targets

    DOEpatents

    Makowiecki, D.M.; McKernan, M.A.

    1994-02-15

    An improved method and assembly for attaching sputtering targets to cathode assemblies of sputtering systems which includes a magnetically permeable material is described. The magnetically permeable material is imbedded in a target base that is brazed, welded, or soldered to the sputter target, or is mechanically retained in the target material. Target attachment to the cathode is achieved by virtue of the permanent magnets and/or the pole pieces in the cathode assembly that create magnetic flux lines adjacent to the backing plate, which strongly attract the magnetically permeable material in the target assembly. 11 figures.

  17. Magnetically attached sputter targets

    DOEpatents

    Makowiecki, Daniel M.; McKernan, Mark A.

    1994-01-01

    An improved method and assembly for attaching sputtering targets to cathode assemblies of sputtering systems which includes a magnetically permeable material. The magnetically permeable material is imbedded in a target base that is brazed, welded, or soldered to the sputter target, or is mechanically retained in the target material. Target attachment to the cathode is achieved by virtue of the permanent magnets and/or the pole pieces in the cathode assembly that create magnetic flux lines adjacent to the backing plate, which strongly attract the magnetically permeable material in the target assembly.

  18. Bandgap tuning and spectroscopy analysis of In x Ga (1-x) N thin films grown by RF sputtering method

    NASA Astrophysics Data System (ADS)

    Jakkala, Pratheesh; Kordesch, Martin E.

    2017-01-01

    In this study, we present a simple and novel method for optical bandgap tuning of indium gallium nitride (InGaN) thin films by controlling the growth conditions in magnetron RF sputtering. Thin films with different indium (In) atomic compositions, x = 0.02 to 0.57 are deposited on high temperature aluminosilicate glass and silicon (111) substrates. Substrate temperature is varied from 35 °C to 450 °C. The gas mixture for sputtering is inert argon (Ar) and reactive nitrogen (N2). Total pressure of sputtering gas mixture is kept constant at 12 mTorr but partial pressures of Ar and N2 are varied. Ar partial pressure to total pressure ratio is varied from 0 to 0.75. Optical bandgap values from 1.4 eV to 3.15 eV, absorption coefficient values of ˜104 cm-1 to ˜7 × 105 cm-1 and critical film thickness values of 0.04 μm to 4 μm are measured. UV-visible spectroscopy method and Tauc plots are used. Bandgap tuning with Ar partial pressure ratio and substrate temperature is presented.

  19. Effect on beam profile of Ti alloy plate fabrication from powder by sputter-less selective laser melting

    NASA Astrophysics Data System (ADS)

    Sato, Yuji; Tsukamoto, Masahiro; Yamashita, Yorihiro; Yamashita, Kensuke; Yamagata, Shuto; Higashino, Ritsuko; Abe, Nobuyuki

    2017-02-01

    Titanium alloy (Ti-6Al-4V) ,which has a crystal orientation of α+β type, are clinical employed for an artificial bone and a hard tissue implant for human body because of light, nonmagnetic, weather resistance and biocompatibility, but it is difficult to form a complicated structure, as a bionic structure, owing to a difficult-to-cut machine material. Thus, titanium alloy plates were fabricated by selective laser melting (SLM) in vacuum. Melting and solidification process were captured with high speed video camera, it was found that sputter was depended on the surface roughness. The sputter-less fabrication for SLM in vacuum was developed to minimize the surface roughness to 0.6μm at the laser scanning speed of 10mm/s. It was also determined that crystal orientation was evaluated with X-ray diffraction (XRD). It was recorded from the powder peaks of α (1011), α (0002), α (1010), and α (1012) that the crystal orientation is composed mainly of martensitic alpha by XRD analysis. Diffraction peaks corresponding to β (110) were detected in vacuum SLM processed samples.

  20. Validating mass spectrometry measurements of nuclear materials via a non-contact volume analysis method of ion sputter craters

    SciTech Connect

    Willingham, David G.; Naes, Benjamin E.; Fahey, Albert J.

    2015-01-01

    A combination of secondary ion mass spectrometry, optical profilometry and a statistically-driven algorithm was used to develop a non-contact volume analysis method to validate the useful yields of nuclear materials. The volume analysis methodology was applied to ion sputter craters created in silicon and uranium substrates sputtered by 18.5 keV O- and 6.0 keV Ar+ ions. Sputter yield measurements were determined from the volume calculations and were shown to be comparable to Monte Carlo calculations and previously reported experimental observations. Additionally, the volume calculations were used to determine the useful yields of Si+, SiO+ and SiO2+ ions from the silicon substrate and U+, UO+ and UO2+ ions from the uranium substrate under 18.5 keV O- and 6.0 keV Ar+ ion bombardment. This work represents the first steps toward validating the interlaboratory and cross-platform performance of mass spectrometry for the analysis of nuclear materials.

  1. Electrical and optical properties of hydrogenated amorphous silicon-germanium (a-Si1 - xGexH) films prepared by reactive ion beam sputtering

    NASA Astrophysics Data System (ADS)

    Bhan, Mohan Krishan; Malhotra, L. K.; Kashyap, Subhash C.

    1989-09-01

    Thin films of hydrogenated amorphous silicon-germanium (a-Si1-xGex: H) alloys have been prepared by reactive ion beam sputtering of a composite target of silicon and germanium. The dependence of the deposition rate, conductivity-temperature variation, optical absorption coefficient, refractive index, imaginary part of the dielectric constant, hydrogen content, and infrared (IR) absorption spectra on germanium content (x) are reported and analyzed. For a typical composition—a-Si28Ge72:H (x=0.72), the effect of beam voltage, H2:Ar flow ratio, and substrate temperature on the material properties have also been investigated. For the films prepared with increasing x, the expected behavior of a decrease in both hydrogen content and band gap and an increase in the electrical conductivity have been observed. The films prepared at x>0.80 are found to be more homogeneous than the films deposited at 0.0beam voltage and substrate temperature of 1500 V and 300 °C, respectively. These films contain a hydrogen concentration of 10.2 at. % and show an optical band gap of 1.25 eV. The IR studies have shown that a-Si28Ge72:H films prepared both at low beam voltages and at low substrate temperatures show the unusual preferential attachment of hydrogen to Ge rather than to Si.

  2. Initial alignment method for free space optics laser beam

    NASA Astrophysics Data System (ADS)

    Shimada, Yuta; Tashiro, Yuki; Izumi, Kiyotaka; Yoshida, Koichi; Tsujimura, Takeshi

    2016-08-01

    The authors have newly proposed and constructed an active free space optics transmission system. It is equipped with a motor driven laser emitting mechanism and positioning photodiodes, and it transmits a collimated thin laser beam and accurately steers the laser beam direction. It is necessary to introduce the laser beam within sensible range of the receiver in advance of laser beam tracking control. This paper studies an estimation method of laser reaching point for initial laser beam alignment. Distributed photodiodes detect laser luminescence at respective position, and the optical axis of laser beam is analytically presumed based on the Gaussian beam optics. Computer simulation evaluates the accuracy of the proposed estimation methods, and results disclose that the methods help us to guide the laser beam to a distant receiver.

  3. Modeling of sputtered and electron-beam evaporated multilayer ITO/InP solar cells based on efficiency studies

    NASA Astrophysics Data System (ADS)

    Henry, Jasmine; Livingstone, John

    2001-10-01

    With an energy gap of 1.34 eV, indium phosphide (InP) is an ideal material for solar energy conversion. Much work has been carried out on sputtered indium-tin-oxide (ITO)/InP solar cells but modeling of this structure has long been the subject of debate. The double-layer structure used in this work was originally devised to minimize the surface degradation of InP when exposed to normal heating steps during the fabrication process due to the low congruent temperature of InP. We deposited a thin protective layer of either ITO or indium-tin to protect the front surface of the InP before any heating stages took place. A second layer, ITO, was then deposited to compete the junction. Variation of film deposition conditions, thicknesses and annealing steps worked to improve device performances as well as provide insight into junction mechanisms.

  4. Atomic rearrangement of a sputtered MoS2 film from amorphous to a 2D layered structure by electron beam irradiation.

    PubMed

    Kim, Bong Ho; Gu, Hyun Ho; Yoon, Young Joon

    2017-06-20

    We synthesised a crystalline MoS2 film from as-sputtered amorphous film by applying an electron beam irradiation (EBI) process. A collimated electron beam (60 mm dia.) with an energy of 1 kV was irradiated for only 1 min to achieve crystallisation without an additional heating process. After the EBI process, we observed a two-dimensional layered structure of MoS2 about 4 nm thick and with a hexagonal atomic arrangement on the surface. A stoichiometric MoS2 film was confirmed to grow well on SiO2/Si substrates and include partial oxidation of Mo. In our experimental configuration, EBI on an atomically thin MoS2 layer stimulated the transformation from a thermodynamically unstable amorphous structure to a stable crystalline nature with a nanometer grain size. We employed a Monte Carlo simulation to calculate the penetration depth of electrons into the MoS2 film and investigated the atomic rearrangement of the amorphous MoS2 structure.

  5. Method for sputtering a PIN microcrystalline/amorphous silicon semiconductor device with the P and N-layers sputtered from boron and phosphorous heavily doped targets

    DOEpatents

    Moustakas, Theodore D.; Maruska, H. Paul

    1985-04-02

    A silicon PIN microcrystalline/amorphous silicon semiconductor device is constructed by the sputtering of N, and P layers of silicon from silicon doped targets and the I layer from an undoped target, and at least one semi-transparent ohmic electrode.

  6. Simple methods for polymer nanostructuring by plasma modification, metal sputtering, and annealing

    NASA Astrophysics Data System (ADS)

    Jurik, Petr; Slepicka, Petr; Svorcik, Vaclav

    2016-09-01

    Self-organization offer cost-efficient and easily scalable way to nanopattern polymer surfaces for various applications ranging from medical use to sensing applications. For example poly-L-lactic acid can be modified either by metal sputtering and/or plasma discharge to form ripple-like structures after annealing with size and regularity highly dependent on processing variables. Such samples have enhanced biocompatibility and as such they are promising substrates for use as various implants. Another example is annealing of polyethersulfone film modified by metal sputtering that causes coalescence of metal layer into separated metal nanoclusters. This structure exhibit localized surface Plasmon resonance, which can be used for example in Surface enhanced Raman spectroscopy.

  7. Electron beam directed energy device and methods of using same

    DOEpatents

    Retsky, Michael W.

    2007-10-16

    A method and apparatus is disclosed for an electron beam directed energy device. The device consists of an electron gun with one or more electron beams. The device includes one or more accelerating plates with holes aligned for beam passage. The plates may be flat or preferably shaped to direct each electron beam to exit the electron gun at a predetermined orientation. In one preferred application, the device is located in outer space with individual beams that are directed to focus at a distant target to be used to impact and destroy missiles. The aimings of the separate beams are designed to overcome Coulomb repulsion. A method is also presented for directing the beams to a target considering the variable terrestrial magnetic field. In another preferred application, the electron beam is directed into the ground to produce a subsurface x-ray source to locate and/or destroy buried or otherwise hidden objects including explosive devices.

  8. Sputter target

    DOEpatents

    Gates, Willard G.; Hale, Gerald J.

    1980-01-01

    The disclosure relates to an improved sputter target for use in the deposition of hard coatings. An exemplary target is given wherein titanium diboride is brazed to a tantalum backing plate using a gold-palladium-nickel braze alloy.

  9. Methods and apparatus for altering material using ion beams

    DOEpatents

    Bloomquist, Douglas D.; Buchheit, Rudy; Greenly, John B.; McIntyre, Dale C.; Neau, Eugene L.; Stinnett, Regan W.

    1996-01-01

    A method and apparatus for treating material surfaces using a repetitively pulsed ion beam. In particular, a method of treating magnetic material surfaces in order to reduce surface defects, and produce amorphous fine grained magnetic material with properties that can be tailored by adjusting treatment parameters of a pulsed ion beam. In addition to a method of surface treating materials for wear and corrosion resistance using pulsed particle ion beams.

  10. Effects of off-stoichiometry and density on the magnetic and magneto-optical properties of yttrium iron garnet films by magnetron sputtering method

    SciTech Connect

    Yang Qinghui; Zhang Huaiwu; Wen Qiye; Liu Yingli

    2010-10-15

    Yttrium iron garnet films were deposited on Si and Si/CeO{sub 2} substrates by magnetron sputtering method followed by postannealing. By varying the fabrication parameters such as sputtering atmosphere, sputtering power, and annealing atmosphere, single phase garnet films were obtained with different off-stoichiometry and film density. The dependence of cation ratio, magnetic and magneto-optical characteristics, and absorption coefficient were systemically investigated. The results reveal that a proper oxygen pressure in both sputtering and annealing process give rise to a small cation ratio of (Fe{sup 2+} or Fe{sup 4+})/Fe{sup 3+}, thus is beneficial to obtain large saturation magnetization, large Faraday rotation, and small optical absorption. The sputtering power can also affect the properties of the film through changing the film density. Our results indicate that the properties of sputtering deposited yttrium iron garnet (YIG) film can be easily tuned and optimized by modifying the off-stoichiometry and density of the film, thus provides flexibility to fabricate YIG film for extensive applications.

  11. Kinematic and thermodynamic effects on liquid metal sputtering

    NASA Astrophysics Data System (ADS)

    Allain, J. P.; Ruzic, D. N.

    2000-10-01

    The absolute sputtering yields of D+, He+ and Li+ on solid, liquid lithium and liquid tin-lithium have been successfully measured and modeled at low energies [1-3]. The Ion-surface InterAction Experiment (IIAX) is used to determine the dependence of Li erosion on temperature and physical sputtering. Preliminary data shows that for He+ bombardment of liquid phase lithium, the physical sputtering yield increases with increasing target temperature. A Colutron ion source is used to create and accelerate gaseous or metal ions onto a molten metal target. The liquid metal targets are heated past their melting point to various temperatures, where the surface oxide layer is plasma cleaned and immediately irradiated with D+, Li+ or He+ ion beams, at each temperature. The evaporated flux at each temperature is measured before and after beam irradiation. The fraction of Li atoms sputtered as ions, is also measured as a function of temperature. Modeling of the absolute sputtering yield is accomplished by VFTRIM-3D, a variant of the TRIM-SP code [4]. [1] J.P. Allain and D.N. Ruzic, submitted Nuclear Fusion April 2000. [2] J.P. Allain, M.R. Hendricks, D.N. Ruzic, submitted J. Nucl. Mater. May 2000 [3] J.P. Allain, M.R. Hendricks, D.N. Ruzic, submitted J. Nucl. Mater. May 2000 [4] D.N. Ruzic, Nuclear Instrum. and Methods in Phys. Res. B47 (1990) pp. 118-125

  12. Non-uniform beam vibration using Differential Transform Method

    NASA Astrophysics Data System (ADS)

    Shali, S.; Nagaraja, S. R.; Jafarali, P.

    2016-09-01

    The paper focuses on the vibration characteristics of non-uniform Euler- Bernoulli beam using Differential Transform Method (DTM). DTM is a numerical method to solve differential equations where the governing equations are reduced into a set of polynomials. Non-uniformity is considered corresponding to linear variation in breadth and height of the beam. The effect of taper ratio on the fundamental frequency of tapered beams is also analysed. The method has proved to be accurate, simple and effective for eigenvalue analysis. For the two cases of non-uniform beam analysed, the frequency computed by the method of differential transform is found to be comparable with the previously available results.

  13. Development of sputtered techniques for thrust chambers

    NASA Technical Reports Server (NTRS)

    Mullaly, J. R.; Allard, P. A.

    1979-01-01

    The 0.152 cm thick sputtered and copper deposits were electron beam welded to wrought copper. Tensile specimens were machined from the weld assemblies and tested at room temperature. Tensile strength approached the strength of wrought material. Elongations up to 25% were measured. Sputtered aluminum was used to fill 0.157 cm wide by 0.127 cm deep grooves in thrust chamber spool piece liners. The liners were closed out by sputtering copper from post and hollow cathodes.

  14. The virtual beam tracing method for microwave beams in an inhomogeneous plasma

    NASA Astrophysics Data System (ADS)

    Saveliev, A. N.

    2009-07-01

    A new approach treating a real narrow microwave beam as a superposition of wide 'virtual' beams unaffected by diffraction within the plasma volume is proposed. A solution thus found describes propagation of a microwave beam in a plasma volume taking into account diffraction, absorption and refraction in the framework of a single procedure. In contrast to most other methods this new approach does not require validity of the paraxial approximation for a beam. A numerical code VBTrace developed on the basis of the virtual beam tracing (VBT) method and intended for calculation of propagation of Gaussian beams in a tokamak plasma for the electron cyclotron frequency range is described. Axially symmetric tokamak geometry utilized in the VBTrace code is not a principal restriction for the VBT method which is applicable for the general case of a 3D inhomogeneous plasma as well.

  15. Design method of coaxial reflex hollow beam generator

    NASA Astrophysics Data System (ADS)

    Wang, Jiake; Xu, Jia; Fu, Yuegang; He, Wenjun; Zhu, Qifan

    2016-10-01

    In view of the light energy loss in central obscuration of coaxial reflex optical system, the design method of a kind of hollow beam generator is introduced. First of all, according to the geometrical parameter and obscuration ratio of front-end coaxial reflex optical system, calculate the required physical dimension of hollow beam, and get the beam expanding rate of the hollow beam generator according to the parameters of the light source. Choose the better enlargement ratio of initial expanding system using the relational expression of beam expanding rate and beam expanding rate of initial system; the traditional design method of the reflex optical system is used to design the initial optical system, and then the position of rotation axis of the hollow beam generator can be obtained through the rotation axis translation formula. Intercept the initial system bus bar using the rotation axis after the translation, and rotate the bus bar around the rotation axis for 360°, so that two working faces of the hollow beam generator can be got. The hollow beam generator designed by this method can get the hollow beam that matches the front-end coaxial reflex optical system, improving the energy utilization ratio of beam and effectively reducing the back scattering of transmission system.

  16. In situ stress evolution during and after sputter deposition of Al thin films.

    PubMed

    Pletea, M; Koch, R; Wendrock, H; Kaltofen, R; Schmidt, O G

    2009-06-03

    The stress, growth, and morphology evolution of Al thin films up to 300 nm thick, sputter deposited at a constant rate of 0.04 nm s(-1) onto thermally oxidized Si(100) substrates have been investigated for various sputter pressures in the range from 0.05 to 6 Pa. The stress evolution has been studied during and after the film deposition by means of in situ substrate curvature measurements using an optical two-beam deflection method. In order to obtain insight into the mechanisms of stress generation and relaxation, the microstructure of the films was investigated by scanning electron microscopy, focused-ion-beam microscopy, and atomic force microscopy. The stress evolution during the early stage of deposition of films is consistent with the Volmer-Weber growth mode known for metals with high adatom mobility. For thicker films, the compressive stress increases in the sputter pressure range of 0.05-0.5 Pa, whereas at even higher sputter pressures a transition from compressive to tensile stress takes place. This transition is correlated with a change from a relatively dense to a more porous microstructure characterized by decreasing mass density and increasing electrical resistivity with increasing sputter pressure. The dependence of the stress and microstructure on the sputter pressure can be consistently understood through a combination of the stress mechanisms for vapor and sputter deposited films proposed in the literature.

  17. Properties of nano structured Ag-TiO{sub 2} composite coating on stainless steel using RF sputtering method

    SciTech Connect

    Bakar, S. Abu; Jamuna-Thevi, K.; Abu, N.; Mohd Toff, M. R.

    2012-07-02

    RF Sputtering system is one of the Physical Vapour Deposition (PVD) methods that have been widely used to produce hard coating. This technique is used to deposit thin layers of metallic substrates such as stainless steel (SS). From this process, a good adhesiveness and wear resistance coating can be produced for biomedical applications. In this study, RF sputtering method was used to deposit TiO{sub 2}-Ag composite coatings via various deposition parameters. The parameters are RF power of 350W, gas composition (Ar: O{sub 2}) 50:5 and deposition time at 1, 2, 4 and 6 hours. Scanning Electron Microscopy (SEM), X-Ray Diffraction (XRD) and Raman spectroscopy were used to characterize surface area of coated samples. The formation of nanocrystalline thin film and the surface morphology were examined using SEM. The crystallite size of TiO{sub 2}-Ag composite coatings were estimated between 20-60 nm based on XRD analysis using Scherer equation and SEM evaluation. The Raman and XRD results suggested that the structure of the TiO{sub 2}-Ag consist of anatase and rutile phases. It also showed that the intensity of anatase peaks increased after samples undergone annealing process at 500 Degree-Sign C.

  18. Properties of nano structured Ag-TiO2 composite coating on stainless steel using RF sputtering method

    NASA Astrophysics Data System (ADS)

    Bakar, S. Abu; Jamuna-Thevi, K.; Abu, N.; Mohd Toff, M. R.

    2012-07-01

    RF Sputtering system is one of the Physical Vapour Deposition (PVD) methods that have been widely used to produce hard coating. This technique is used to deposit thin layers of metallic substrates such as stainless steel (SS). From this process, a good adhesiveness and wear resistance coating can be produced for biomedical applications. In this study, RF sputtering method was used to deposit TiO2-Ag composite coatings via various deposition parameters. The parameters are RF power of 350W, gas composition (Ar: O2) 50:5 and deposition time at 1, 2, 4 and 6 hours. Scanning Electron Microscopy (SEM), X-Ray Diffraction (XRD) and Raman spectroscopy were used to characterize surface area of coated samples. The formation of nanocrystalline thin film and the surface morphology were examined using SEM. The crystallite size of TiO2-Ag composite coatings were estimated between 20-60 nm based on XRD analysis using Scherer equation and SEM evaluation. The Raman and XRD results suggested that the structure of the TiO2-Ag consist of anatase and rutile phases. It also showed that the intensity of anatase peaks increased after samples undergone annealing process at 500 °C.

  19. Effects of boron dopants of Si (001) substrates on formation of Ge layers by sputter epitaxy method

    SciTech Connect

    Tsukamoto, Takahiro; Suda, Yoshiyuki; Hirose, Nobumitsu; Kasamatsu, Akifumi; Mimura, Takashi; Matsui, Toshiaki

    2013-10-21

    The formation of Ge layers on boron-doped Si (001) substrates by our sputter epitaxy method has been investigated. The surface morphology of Ge layers grown on Si substrates depends on the substrate resistance, and flat Ge layers are obtained on Si substrates with 0.015 Ω cm resistivity. Highly boron-doped Si substrates cause a transition in the dislocation structure from complex dislocations with 60° dislocation glide planes to 90° pure-edge dislocations, resulting in the formation of flat Ge layers. Furthermore, we have found that the surface morphology of the Ge layers improves with increasing Ge layer thickness. Ge atoms migrating on the deposited Ge layers tend to position themselves at the reactive sites, where the reactivity is related to the number of bonding contacts between the Ge atom and the surface. This modifies the surface morphology, resulting in a flatter surface. Boron dopants together with the sputter epitaxy method effectively suppress the growth of Ge islands and result in the formation of flat Ge layers.

  20. Shielded beam delivery apparatus and method

    DOEpatents

    Hershcovitch, Ady; Montano, Rory Dominick

    2006-07-11

    An apparatus includes a plasma generator aligned with a beam generator for producing a plasma to shield an energized beam. An electrode is coaxially aligned with the plasma generator and followed in turn by a vortex generator coaxially aligned with the electrode. A target is spaced from the vortex generator inside a fluid environment. The electrode is electrically biased relative to the electrically grounded target for driving the plasma toward the target inside a vortex shield.

  1. Work Function Modification of Tungsten-Doped Indium Oxides Deposited by the Co-Sputtering Method.

    PubMed

    Oh, Gyujin; Jeon, Jia; Lee, Kyoung Su; Kim, Eun Kyu

    2016-05-01

    We have studied the work function modification of tungsten-doped indium oxides (IWOs) through the co-sputtering of indium oxide (In2O3) and indium tungsten oxide (In2O3 80 wt% + WO3 20 wt%) via a radio frequency (RF) magnetron sputtering system. By controlling the elemental deposition of IWOs, the resultant work functions varied from 4.37 eV to 4.1 eV. The IWO thin films showed excellent properties for application as transparent conducting oxide materials in the region of 0 to 2.43 at.% of tungsten versus the total metal content. The carrier concentration of n-type IWO thin films varied from 8.39 x 10(19) cm(-3) to 8.58 x 10(21) cm(-3), while the resistivity varied from 3.15 x 10(-4) Ωcm to 2.26 x 10(-3) Ωcm. The largest measured optical band gap was 3.82 eV determined at 2.43 at.% of tungsten atoms relative to the total amount of metal atoms, while the smallest optical band gap was 3.6 eV at 4.78 at.% of tungsten. IWO films containing more than 2.43 at.% of tungsten atoms relative to the total number of metal atoms revealed an average transmittance of over 80% within the visible light region.

  2. Magnetron sputtered boron films

    DOEpatents

    Makowiecki, D.M.; Jankowski, A.F.

    1998-06-16

    A method is described for the production of thin boron and titanium/boron films by magnetron sputter deposition. The amorphous boron films contain no morphological growth features, unlike those found when thin films are prepared by various physical vapor deposition processes. Magnetron sputter deposition method requires the use of a high density crystalline boron sputter target which is prepared by hot isostatic pressing. Thin boron films prepared by this method are useful for producing hardened surfaces, surfacing machine tools, etc. and for ultra-thin band pass filters as well as the low Z element in low Z/high Z optical components, such as mirrors which enhance reflectivity from grazing to normal incidence. 8 figs.

  3. Magnetron sputtered boron films

    DOEpatents

    Makowiecki, Daniel M.; Jankowski, Alan F.

    1998-01-01

    A method is described for the production of thin boron and titanium/boron films by magnetron sputter deposition. The amorphous boron films contain no morphological growth features, unlike those found when thin films are prepared by various physical vapor deposition processes. Magnetron sputter deposition method requires the use of a high density crystalline boron sputter target which is prepared by hot isostatic pressing. Thin boron films prepared by this method are useful for producing hardened surfaces, surfacing machine tools, etc. and for ultra-thin band pass filters as well as the low Z element in low Z/high Z optical components, such as mirrors which enhance reflectivity from grazing to normal incidence.

  4. [Beam hardening correction method for X-ray computed tomography based on subsection beam hardening curves].

    PubMed

    Huang, Kui-dong; Zhang, Ding-hua

    2009-09-01

    After researching the forming principle of X-ray beam hardening and analyzing the usual methods of beam hardening correction, a beam hardening correction model was established, in which the independent variable was the projection gray, and so the computing difficulties in beam hardening correction can be reduced. By considering the advantage and disadvantage of fitting beam hardening curve to polynomial, a new expression method of the subsection beam hardening curves based on polynomial was proposed. In the method, the beam hardening data were fitted firstly to a polynomial curve which traverses the coordinate origin, then whether the got polynomial curve surged in the fore-part or back-part of the fitting range was judged based on the polynomial curvature change. If the polynomial fitting curve surged, the power function curve was applied to replace the surging parts of the polynomial curve, and the C1 continuity was ensured at the joints of the segment curves. The experimental results of computed tomography (CT) simulation show that the method is well stable in the beam hardening correction for the ideal CT images and CT images with added noises, and can mostly remove the beam hardening artifact at the same time.

  5. LASER BEAMS: On a method for obtaining laser beams with a phase singularity

    NASA Astrophysics Data System (ADS)

    Malyutin, A. A.

    2004-03-01

    A method is analysed for obtaining laser beams with a phase singularity with the help of phase screens described by the function of the type exp(ilphi). It is shown that this method is used to obtain laser beams in the form of single rings with a smooth intensity distribution in the far-field radiation zone (at the lens focus) representing the superposition of Laguerre — Gaussian modes. In the near-field zone and, in the presence of aperture clipping, also in the focal region, the beams with a more complicated structure can be observed. The scaling of the radius corresponding to the maximum intensity of the beam both in the absence and presence of aperture clipping occurs linearly with the singularity charge l. The influence of the beam decentration and of the phase screen on the structure of phase-singularity beams is estimated.

  6. Inelastic tunneling conductance and magnetoresistance investigations in dual ion-beam sputtered CoFeB(110)/MgO/CoFeB (110) magnetic tunnel junctions

    SciTech Connect

    Bhusan Singh, Braj; Chaudhary, Sujeet

    2014-04-21

    Magnetic tunnel junctions (MTJs) comprising Ta(5)/NiFe(5)/IrMn(15)/CoFeB(5)/Mg(1)/MgO(3.5)/ CoFeB(5)/Ta(5)/Ag(20) (thickness in nm) with (110) oriented CoFeB layers are grown using dual ion beam sputtering. The tunnel magnetoresistance (TMR) of MTJs is found to be significantly bias dependent and exhibits zero bias anomaly (ZBA) which is attributed to the presence of magnetic impurities or diffusion of Mn from antiferromagnetic IrMn in the barrier. Adjacent to the ZBA, two peaks at 24 ± 3 mV and 34 ± 3 mV are also observed, which differ both in intensity as well as their position in the antiparallel and parallel magnetic states, suggesting that they are due to magnon excitations. In addition to this, a phonon peak at 65 ± 3 mV is also observed. The effect of temperature on the inelastic and elastic tunneling contributions is studied in detail in 25–300 K range using the Glazman and Matveev model. Ten series of localized states are found to be involved in hopping conduction in the forbidden gap of MgO barrier. The effect of presence of such inelastic channels is found to be insignificant at low temperatures yielding sizeable enhancement in TMR.

  7. Effect of MgO spacer and annealing on interface and magnetic properties of ion beam sputtered NiFe/Mg/MgO/CoFe layer structures

    SciTech Connect

    Bhusan Singh, Braj; Chaudhary, Sujeet

    2012-09-15

    The effect of variation in the thickness of ion assisted ion beam sputtered MgO spacer layer deposited at oxygen ion assisted energy of 50 eV on the extent of magnetic coupling of NiFe and CoFe layers in Si/NiFe(10 nm)/Mg(1 nm)/MgO(2,4,6 nm)/CoFe(10 nm) sandwich structure is investigated. At MgO spacer layer thickness of 4 nm, the separate reversal of magnetizations of the two ferromagnetic layers is observed in the hystresis loop recorded along easy direction. This results in a 3.5 Oe wide plateau like region during magnetization reversal, which became 4.5 Oe at 6 nm thin MgO. At 2 nm thin MgO, the absence of plateau during magnetization reversal region revealed ferromagnetic coupling between the two ferromagnetic layers, which is understood to arise due to the growth of very thin and low density (1.22 gm/cc) MgO spacer layer, indicating the presence of pinholes as revealed by x-ray reflectometry. After vaccum annealing (200 Degree-Sign C/1 h), the plateau region for 4 and 6 nm thin MgO case decreased to 1.5 Oe and 2.0 Oe, respectively, due to enhanced interface roughness/mixing. In addition, an enhancement of the in-plane magnetic anisotropy is also observed.

  8. Effect of oxygen partial pressure on the structural and optical properties of ion beam sputtered TiO2 thin films

    NASA Astrophysics Data System (ADS)

    Tantray, Firdous A.; Chouhan, Romita; Rajput, Swati; Agrawal, Arpana; Andrews, Joseph T.; Sen, Pranay K.; Gupta, Mukul; Sen, Pratima

    2016-10-01

    We report the effect of oxygen partial pressure on the structural, electronic and nonlinear optical properties of ion beam sputtered TiO2 thin films deposited on glass substrate at 40% of oxygen (S1) and 20% of oxygen (S2) partial pressure. XRD data shows the crystalline nature of S1 film while the film S2 was amorphous in nature. The energy band gap of the thin films calculated from their UV-Vis spectra was found to be 3.63 eV (S1) and 3.56 eV (S2). The decrease in the band gap with decrease in oxygen partial pressure may be attributed to the amorphous nature of the film. The nonlinear refractive indices for both the films were obtained from the closed aperture Z-scan experiment performed using a cw He-Ne laser source operating at 632.8 nm and were found to be 17.6×10-9 m2/W and -5.64×10-9 m2/W for S1and S2 films, respectively. The reversal in the sign of the nonlinear refractive index may also be ascribed to the crystallinity of the grown films.

  9. Cupric and cuprous oxide by reactive ion beam sputter deposition and the photosensing properties of cupric oxide metal-semiconductor-metal Schottky photodiodes

    NASA Astrophysics Data System (ADS)

    Hong, Min-Jyun; Lin, Yong-Chen; Chao, Liang-Chiun; Lin, Pao-Hung; Huang, Bohr-Ran

    2015-08-01

    Cupric (CuO) and cuprous (Cu2O) oxide thin films have been deposited by reactive ion beam sputter deposition at 400 °C with an Ar:O2 ratio from 2:1 to 12:1. With an Ar:O2 ratio of 2:1, single phase polycrystalline CuO thin films were obtained. Decreasing oxygen flow rate results in CuO + Cu2O and Cu2O + Cu mixed thin films. As Ar:O2 ratio reaches 12:1, Cu2O nanorods with diameter of 250 nm and length longer than 1 μm were found across the sample. Single phase CuO thin film exhibits an indirect band gap of 1.3 eV with a smooth surface morphology. CuO metal-semiconductor-metal (MSM) Schottky photodiodes (PD) were fabricated by depositing Cu interdigitated electrodes on CuO thin films. Photosensing properties of the CuO PD were characterized from 350 to 1300 nm and a maximum responsivity of 43 mA/W was found at λ = 700 nm. The MSM PD is RC limited with a decay time constant less than 1 μs.

  10. Organic solar cells using a ZnO/Cu/ZnO anode deposited by ion beam sputtering at room temperature for flexible devices.

    PubMed

    El Hajj, Ahmad; Lucas, Bruno; Barbot, Anthony; Antony, Rémi; Ratier, Bernard; Aldissi, Matt

    2013-07-01

    The development of indium-free transparent conductive oxides (TCOs) on polymer substrates for flexible devices requires deposition at low temperatures and a limited thermal treatment. In this paper, we investigated the optical and electrical properties of ZnO/Cu/ZnO multi-layer electrodes obtained by ion beam sputtering at room temperature for flexible optoelectronic devices. This multilayer structure has the advantage of adjusting the layer thickness to favor antireflection and surface plasmon resonance of the metallic layer. We found that the optimal electrode is made up of a 10 nm-thick Cu layer between two 40 nm-thick ZnO layers, which results in a sheet resistance of 12 omega/(see symbol), a high transmittance of 85% in the visible range, and the highest figure of merit of 5.4 x 10(-3) (see symbol)/omega. A P3HT:PCBM-based solar cell showed a power conversion efficiency (PCE) of 2.26% using the optimized ZnO (40 nm)/Cu (10 nm)/ZnO (40 nm) anode.

  11. Low temperature growth of Co{sub 2}MnSi films on diamond semiconductors by ion-beam assisted sputtering

    SciTech Connect

    Nishiwaki, M.; Ueda, K. Asano, H.

    2015-05-07

    High quality Schottky junctions using Co{sub 2}MnSi/diamond heterostructures were fabricated. Low temperature growth at ∼300–400 °C by using ion-beam assisted sputtering (IBAS) was necessary to obtain abrupt Co{sub 2}MnSi/diamond interfaces. Only the Co{sub 2}MnSi films formed at ∼300–400 °C showed both saturation magnetization comparable to the bulk values and large negative anisotropic magnetoresistance, which suggests half-metallic nature of the Co{sub 2}MnSi films, of ∼0.3% at 10 K. Schottky junctions formed using the Co{sub 2}MnSi films showed clear rectification properties with rectification ratio of more than 10{sup 7} with Schottky barrier heights of ∼0.8 eV and ideality factors (n) of ∼1.2. These results indicate that Co{sub 2}MnSi films formed at ∼300–400 °C by IBAS are a promising spin source for spin injection into diamond semiconductors.

  12. p-type conduction from Sb-doped ZnO thin films grown by dual ion beam sputtering in the absence of oxygen ambient

    NASA Astrophysics Data System (ADS)

    Kumar Pandey, Sushil; Kumar Pandey, Saurabh; Awasthi, Vishnu; Kumar, Ashish; Deshpande, Uday P.; Gupta, Mukul; Mukherjee, Shaibal

    2013-10-01

    Sb-doped ZnO (SZO) thin films were deposited on c-plane sapphire substrates by dual ion beam sputtering deposition system in the absence of oxygen ambient. The electrical, structural, morphological, and elemental properties of SZO thin films were studied for films grown at different substrate temperatures ranging from 200 °C to 600 °C and then annealed in situ at 800 °C under vacuum (pressure ˜5 × 10-8 mbar). Films grown for temperature range of 200-500 °C showed p-type conduction with hole concentration of 1.374 × 1016 to 5.538 × 1016 cm-3, resistivity of 66.733-12.758 Ω cm, and carrier mobility of 4.964-8.846 cm2 V-1 s-1 at room temperature. However, the film grown at 600 °C showed n-type behavior. Additionally, current-voltage (I-V) characteristic of p-ZnO/n-Si heterojunction showed a diode-like behavior, and that further confirmed the p-type conduction in ZnO by Sb doping. X-ray diffraction measurements showed that all SZO films had (002) preferred crystal orientation. X-ray photoelectron spectroscopy analysis confirmed the formation of SbZn-2VZn complex caused acceptor-like behavior in SZO films.

  13. Atom penetration from a thin film into the substrate during sputtering by polyenergetic Ar{sup +} ion beam with mean energy of 9.4 keV

    SciTech Connect

    Kalin, B.A.; Gladkov, V.P.; Volkov, N.V.; Sabo, S.E.

    1995-12-31

    Penetration of alien atoms (Be, Ni) into Be, Al, Zr, Si and diamond was investigated under Ar{sup +} ion bombardment of samples having thermally evaporated films of 30--50 nm. Sputtering was carried out using a wide energy spectrum beam of Ar{sup +} ions of 9.4 keV to dose D = 1 {times} 10{sup 16}--10{sup 19} ion/cm{sup 2}. Implanted atom distribution in the targets was measured by Rutherford backscattering spectrometry (RBS) of H{sup +} and He{sup +} ions with energy of 1.6 MeV as well as secondary ion mass-spectrometry (SIMS). During the bombardment, the penetration depth of Ar atoms increases with dose linearly. This depth is more than 3--20 times deeper than the projected range of bombarding ions and recoil atoms. This is a deep action effect. The analysis shows that the experimental data for foreign atoms penetration depth are similar to the data calculated for atom migration through the interstitial site in a field of internal (lateral) compressive stresses created in the near-surface layer of the substrate as a result of implantation. Under these experimental conditions atom ratio r{sub i}/r{sub m} (r{sub i} -- radius of dopant, r{sub m} -- radius target of substrate) can play a principal determining role.

  14. Center wavelength shift dependence on substrate coefficient of thermal expansion for optical thin-film interference filters deposited by ion-beam sputtering.

    PubMed

    Brown, Jeffrey T

    2004-08-10

    Single-layer films of Ta2O5 and multilayer thin-film filters of Ta2O5 and SiO2 were deposited by ion-beam-sputter deposition. Postdeposition annealing of the structures resulted in increased optical thickness of the films, resulting in an upward shift in the wavelength of the transmission-reflection spectra. Modeling of the single-layer films by means of the effective media approximation indicates an increase in the void fraction of the film after annealing. This increase is consistent with an observed decrease in refractive index and an increase in physical film thickness. The multilayer structures, deposited on substrates of varying coefficient of thermal expansion (CTE), were annealed at various temperatures, and the change in the center wavelength was measured. The measured change is dependent on the annealing temperature and the substrate CTE, indicating that the increase in the void fraction is caused in part by thermally induced stress during the annealing process. A simple model is proposed that relates the void fraction present in the films after annealing with the substrate CTE and the annealing temperature.

  15. Identification and roles of nonstoichiometric oxygen in amorphous Ta2O5 thin films deposited by electron beam and sputtering processes

    NASA Astrophysics Data System (ADS)

    Mannequin, Cedric; Tsuruoka, Tohru; Hasegawa, Tsuyoshi; Aono, Masakazu

    2016-11-01

    The morphology and composition of tantalum oxide (Ta2O5) thin films prepared by electron-beam (EB) evaporation and radio-frequency sputtering (SP) were investigated by grazing incidence X-ray diffraction (GIXRD), X-ray reflectometry (XRR), atomic force microscopy, Fourier transformed infrared spectroscopy (FTIR), and X-ray photoelectron spectroscopy (XPS). GIXRD revealed an amorphous nature for both films, and XRR showed that the density of the Ta2O5-EB films was lower than that of the Ta2O5-SP films; both films have lower density than the bulk value. A larger amount of molecular water and peroxo species were detected for the Ta2O5-EB films by FTIR performed in ambient atmosphere. XPS analyses performed in vacuum confirmed the presence of hydroxyl groups, but no trace of chemisorbed molecular water was detected. In addition, a higher oxygen nonstoichiometry (higher O/Ta ratio) was found for the EB films. From these results, we conclude that the oxygen nonstoichiometry of the EB film accounted for its lower density and higher amount of absorbed molecular water. The results also suggest the importance of understanding the dependence of the structural and chemical properties of thin amorphous oxide films on the deposition process.

  16. Effect of discharge current and deposition temperature on roughness and density of NbC films fabricated by ion beam sputtering technique

    SciTech Connect

    Dhawan, Rajnish Rai, Sanjay Lodha, G. S.

    2014-04-24

    NbC films were prepared using Ion beam sputtering system at various discharges current from 0.4 amps to 1.2 amps at room temperature. Effect of temperature on NbC films were also studied by depositing NbC films at various temperatures from room temperature to 200,300,400 and 600°C. X-ray reflectivity (XRR) study shows that surface roughness of the film decreases with decrease in discharge current. The optimum lowest roughness 3.2Å having density 92% of bulk was achieved at discharge current 0.6 amps at 3.0 cm{sup 3}/min Ar gas flow. X-ray study also shows that film roughness decreases with increase in temperature of the film and after a certain temperature it increases with increase in temperature. The lowest surface roughness 2.1Å was achieved at 300°C with density 83% of bulk NbC at constant discharge current 0.6 amps.

  17. Ion beam sputter deposition of low-defect EUV mask blanks on 6-in. LTEM substrates in a real production environment

    NASA Astrophysics Data System (ADS)

    Becker, Hans W.; Aschke, Lutz; Schubert, Birgit; Krieger, Juergen; Lenzen, Frank; Yulin, Sergey A.; Feigl, Torsten; Kuhlmann, Thomas; Kaiser, Norbert

    2002-07-01

    EUV mask blanks consist of two thin film systems deposited on low thermal expansion 6 inch substrates (LTEM). First there is the multilayer stack with around 100 alternating layers of elements with different optical properties which are topped by a capping layer. Beside optimal optical properties it is also necessary to improve the heat stability of the layer system. The absorber stack which consists of a buffer and an absorber layer is next. Here a minimum absorption of EUV light of 99 percent is required. The stress in both layer systems should be as low as possible. The reduction of defects to an absolute minimum is one of the main challenges. The high-reflective Mo/Si multilayer coatings were designed for normal incidence reflectivity and successfully deposited on 6-inch LTEM substrates by ion-beam sputtering. X-ray scattering, transmission electron microscopy and atomic force microscopy were used for characterization of the multilayer interfaces and the surface morphology. The results are correlated to the measured normal incidence reflectivity using synchrotron radiation at the PTB reflectometer at BESSY II, Berlin, Germany.

  18. Systems and methods of varying charged particle beam spot size

    SciTech Connect

    Chen, Yu-Jiuan

    2014-09-02

    Methods and devices enable shaping of a charged particle beam. A modified dielectric wall accelerator includes a high gradient lens section and a main section. The high gradient lens section can be dynamically adjusted to establish the desired electric fields to minimize undesirable transverse defocusing fields at the entrance to the dielectric wall accelerator. Once a baseline setting with desirable output beam characteristic is established, the output beam can be dynamically modified to vary the output beam characteristics. The output beam can be modified by slightly adjusting the electric fields established across different sections of the modified dielectric wall accelerator. Additional control over the shape of the output beam can be excreted by introducing intentional timing de-synchronization offsets and producing an injected beam that is not fully matched to the entrance of the modified dielectric accelerator.

  19. Sputter metalization of Wolter type optical elements

    NASA Technical Reports Server (NTRS)

    Ledger, A. M.

    1977-01-01

    An analytical task showed that the coating thickness distribution for both internal and external optical elements coated using either electron beam or sputter sources can be made uniform and will not affect the surface figure of coated elements. Also, sputtered samples of nickel, molybdenum, iridium and ruthenium deposited onto both hot and cold substrates showed excellent adhesion.

  20. Preparation of high-quality AIN films by two-step method of radio frequency magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Zhu, Yu-qing; Chen, Xi-ming; Li, Fu-long; Li, Xiao-wei; Yang, Bao-he

    2013-09-01

    The preparation of nanometer aluminum nitrogen (AlN) films with uniform lattice arrangement is of great significance for the manufacture of high-frequency surface acoustic wave (SAW) device. We put forward the two-step growth method and the annealing treatment method for the deposition of (100) AlN thin films. The results show that when the sputtering pressure is 1.2 Pa and the ratio between N2 and Ar is 12:8, the influence of lattice thermal mismatch and anti-phase is the smallest during the nucleation growth at low-temperature stage of (100) AlN/(100) Si films. The root-mean-square (RMS) surface roughness of AlN prepared by the two-step method is reduced from 6.4 nm to 2.1 nm compared with that by common deposition process.

  1. Nanoripple formation on GaAs (001) surface by reverse epitaxy during ion beam sputtering at elevated temperature

    NASA Astrophysics Data System (ADS)

    Chowdhury, Debasree; Ghose, Debabrata

    2016-11-01

    Self-organized pattern formation by the process of reverse epitaxial growth has been investigated on GaAs (001) surfaces during 1 keV Ar+ bombardment at target temperature of 450 °C for a wide range of incident angles. Highly ordered ripple formation driven by diffusion instability is evidenced at near normal incidence angles. Concurrent sample rotation shows that the ripple morphology and its orientation do not depend on the incident beam direction; rather they are determined by the symmetry of the crystal face.

  2. High power pulsed magnetron sputtering: A method to increase deposition rate

    SciTech Connect

    Raman, Priya McLain, Jake; Ruzic, David N; Shchelkanov, Ivan A.

    2015-05-15

    High power pulsed magnetron sputtering (HPPMS) is a state-of-the-art physical vapor deposition technique with several industrial applications. One of the main disadvantages of this process is its low deposition rate. In this work, the authors report a new magnetic field configuration, which produces deposition rates twice that of conventional magnetron's dipole magnetic field configuration. Three different magnet pack configurations are discussed in this paper, and an optimized magnet pack configuration for HPPMS that leads to a higher deposition rate and nearly full-face target erosion is presented. The discussed magnetic field produced by a specially designed magnet assembly is of the same size as the conventional magnet assembly and requires no external fields. Comparison of deposition rates with different power supplies and the electron trapping efficiency in complex magnetic field arrangements are discussed.

  3. SRF cavity alignment detection method using beam-induced HOM with curved beam orbit

    NASA Astrophysics Data System (ADS)

    Hattori, Ayaka; Hayano, Hitoshi

    2017-09-01

    We have developed a method to obtain mechanical centers of nine cell superconducting radio frequency (SRF) cavities from localized dipole modes, that is one of the higher order modes (HOM) induced by low-energy beams. It is to be noted that low-energy beams, which are used as alignment probes, are easy to bend in fringe fields of accelerator cavities. The estimation of the beam passing orbit is important because only information about the beam positions measured by beam position monitors outside the cavities is available. In this case, the alignment information about the cavities can be obtained by optimizing the parameters of the acceleration components over the beam orbit simulation to consistently represent the position of the beam position monitors measured at every beam sweep. We discuss details of the orbit estimation method, and estimate the mechanical center of the localized modes through experiments performed at the STF accelerator. The mechanical center is determined as (x , y) =(0 . 44 ± 0 . 56 mm , - 1 . 95 ± 0 . 40 mm) . We also discuss the error and the applicable range of this method.

  4. A simple three dimensional wide-angle beam propagation method

    NASA Astrophysics Data System (ADS)

    Ma, Changbao; van Keuren, Edward

    2006-05-01

    The development of three dimensional (3-D) waveguide structures for chip scale planar lightwave circuits (PLCs) is hampered by the lack of effective 3-D wide-angle (WA) beam propagation methods (BPMs). We present a simple 3-D wide-angle beam propagation method (WA-BPM) using Hoekstra’s scheme along with a new 3-D wave equation splitting method. The applicability, accuracy and effectiveness of our method are demonstrated by applying it to simulations of wide-angle beam propagation and comparing them with analytical solutions.

  5. Evaluation of left ventricular assist device pump bladders cast from ion-sputtered polytetrafluorethylene mandrels

    NASA Technical Reports Server (NTRS)

    1982-01-01

    A highly thromboresistant blood contacting interface for use in implanatable blood pump is investigated. Biomaterials mechanics, dynamics, durability, surface morphology, and chemistry are among the critical consideration pertinent to the choice of an appropriate blood pump bladder material. The use of transfer cast biopolymers from ion beam textured surfaces is investigated to detect subtle variations in blood pump surface morphology using Biomer as the biomaterial of choice. The efficacy of ion beam sputtering as an acceptable method of fabricating textured blood interfaces is evaluated. Aortic grafts and left ventricular assist devices were implanted in claves; the blood interfaces were fabricated by transfer casting methods from ion beam textured polytetrafluorethylene mandrels. The mandrels were textured by superimposing a 15 micron screen mesh; ion sputtering conditions were 300 volts beam energy, 40 to 50 mA beam, and a mandrel to source distance of 25 microns.

  6. Comparative Study of As-Deposited ZnO Thin Films by Thermal Evaporation, Pulsed Laser Deposition and RF Sputtering Methods for Electronic and Optoelectronic Applications

    NASA Astrophysics Data System (ADS)

    Vyas, Sumit; Giri, Pushpa; Singh, Shaivalini; Chakrabarti, P.

    2015-10-01

    Zinc oxide (ZnO) thin films have been deposited on Si substrate and glass substrate using thermal evaporation, pulsed laser deposition (PLD) and radio-frequency (RF) sputtering methods. The structural, surface morphological, optical and electrical properties of ZnO thin films deposited by these three methods were investigated and compared systematically using x-ray diffractometer, atomic force microscopy, ellipsometric and current-voltage ( I- V) measurement. The ZnO films deposited by RF sputtering method were highly oriented along the (002) plane. The ZnO films grown by thermal evaporation and PLD methods exhibited a polycrystalline nature. The surface roughness was found to be the least and the transparency in the visible region was the highest for the films grown by the RF sputtering method as compared to the films grown by the other two methods. The I- V characteristics reveal that the Pd:Au/ZnO (RF-sputtered) Schottky contact exhibited a better value of ideality factor, series resistance and barrier height as compared to the values obtained for Pd:Au/ZnO (thermally evaporated and pulse laser-deposited) Schottky contacts. The optical bandgap was found to be almost the same for the films grown by all three methods and was estimated to be around 3.2 eV.

  7. Studies of internal sputtering in a 30-cm ion thruster

    NASA Technical Reports Server (NTRS)

    Mantenieks, M. A.; Rawlin, V. K.

    1975-01-01

    Initial studies have been made of the sputtering and deposition phenomena in a 30-cm thruster. Sputtering rates, of the cathode baffle, one of the main sources of sputtered material in a thruster, have beem measured by weight loss as a function of several thruster parameters. Sputtering rates were found to increase with both cathode flow rate and beam current when constant discharge voltage of 37 volts and power losses of 185 ev/ion were maintained. Sputtering rates were reduced 24% as discharge voltage was decreased from 37 to 33 volts while keeping discharge power constant. Qualitative agreement was found between sputtering rates obtained by the weight loss and those implied by spectroscopically observed line intensities of the excited iron sputtered atoms. After the completion of the sputtering tests, deposition and sputtering sites inside the thruster were identified.

  8. Studies of internal sputtering in a 30-cm ion thruster

    NASA Technical Reports Server (NTRS)

    Mantenieks, M. A.; Rawlin, V. K.

    1975-01-01

    Initial studies have been made of the sputtering and deposition phenomena in a 30-cm thruster. Sputtering rates, of the cathode baffle, one of the main sources of sputtered material in a thruster, have been measured by weight loss as a function of several thruster parameters. Sputtering rates were found to increase with both cathode flow rate and beam current when constant discharge voltage of 37 volts and power loses of 185 ev/ion were maintained. Sputtering rates were reduced 24% as discharge voltage was decreased from 37 to 33 volts while keeping discharge power constant. Qualitative agreement was found between sputtering rates obtained by the weight loss and those implied by spectroscopically observed line intensities of the excited iron sputtered atoms. After the completion of the sputtering tests, deposition and sputtering sites inside the thruster were identified.

  9. Self-catalyzed carbon plasma-assisted growth of tin-doped indium oxide nanostructures by the sputtering method

    NASA Astrophysics Data System (ADS)

    Setti, Grazielle O.; de Jesus, Dosil P.; Joanni, Ednan

    2016-10-01

    In this work a new strategy for growth of nanostructured indium tin oxide (ITO) by RF sputtering is presented. ITO is deposited in the presence of a carbon plasma which reacts with the free oxygen atoms during the deposition, forming species like CO x . These species are removed from the chamber by the pumping system, and one-dimensional ITO nanostructures are formed without the need for a seed layer. Different values of substrate temperature and power applied to the gun containing the carbon target were investigated, resulting in different nanostructure morphologies. The samples containing a higher density of nanowires were covered with gold and evaluated as surface-enhanced Raman scattering substrates for detection of dye solutions. The concept might be applied to other oxides, providing a simple method for unidimensional nanostructural synthesis.

  10. Effects of Bi-Pb substitution in (Bi,Pb)2223 thin films fabricated by sputtering method

    NASA Astrophysics Data System (ADS)

    Mori, Zon; Koba, Shinichiro

    2016-12-01

    Superconducting Bi2-nPbnSr2Ca2Cu3Ox (2223) thin films were deposited by using a multi-target sputtering system. A multi-target system enables the fabrication of thin films with varying compositions. First, we tried to obtain 2223 single-phase films by using the as-grown method. However, it is difficult to remove the influence deficiency of Bi atoms at high temperatures, so only thin films with mixed crystals of Bi2Sr2Ca1Cu2Ox (2212) and 2223 were obtained. We next conducted post-annealing to improve the crystallinity of the thin films and studied the effects of substitution of Bi with Pb. As a result, single-phase 2223 thin films with a critical temperature of 108 K were obtained by optimizing the annealing conditions and the thin film composition.

  11. Direct comparative study on the energy level alignments in unoccupied/occupied states of organic semiconductor/electrode interface by constructing in-situ photoemission spectroscopy and Ar gas cluster ion beam sputtering integrated analysis system

    SciTech Connect

    Yun, Dong-Jin Chung, JaeGwan; Kim, Yongsu; Park, Sung-Hoon; Kim, Seong-Heon; Heo, Sung

    2014-10-21

    Through the installation of electron gun and photon detector, an in-situ photoemission and damage-free sputtering integrated analysis system is completely constructed. Therefore, this system enables to accurately characterize the energy level alignments including unoccupied/occupied molecular orbital (LUMO/HOMO) levels at interface region of organic semiconductor/electrode according to depth position. Based on Ultraviolet Photoemission Spectroscopy (UPS), Inverse Photoemission Spectroscopy (IPES), and reflective electron energy loss spectroscopy, the occupied/unoccupied state of in-situ deposited Tris[4-(carbazol-9-yl)phenyl]amine (TCTA) organic semiconductors on Au (E{sub LUMO}: 2.51 eV and E{sub HOMO}: 1.35 eV) and Ti (E{sub LUMO}: 2.19 eV and E{sub HOMO}: 1.69 eV) electrodes are investigated, and the variation of energy level alignments according to work function of electrode (Au: 4.81 eV and Ti: 4.19 eV) is clearly verified. Subsequently, under the same analysis condition, the unoccupied/occupied states at bulk region of TCTA/Au structures are characterized using different Ar gas cluster ion beam (Ar GCIB) and Ar ion sputtering processes, respectively. While the Ar ion sputtering process critically distorts both occupied and unoccupied states in UPS/IPES spectra, the Ar GCIB sputtering process does not give rise to damage on them. Therefore, we clearly confirm that the in-situ photoemission spectroscopy in combination with Ar GCIB sputtering allows of investigating accurate energy level alignments at bulk/interface region as well as surface region of organic semiconductor/electrode structure.

  12. Beam steering using CGHs in spatial multiplexing method

    NASA Astrophysics Data System (ADS)

    Yoon, Jin-Seon; Kim, Nam

    2002-09-01

    In spatial multiplexing method, the steering devices for reference wave and object wave are necessary. A new scheme applying computer-generated holograms(CGHs) to the steering device is proposed. The beam steering device using CGHs can be performed simultaneously the coarse address function directing the reading or writing beams to the suitable layer and the fine address function corresponding to the particular holographic page within the chosen common volume unit. This new scheme is compared with both the beam steering method using spatial/angular multiplex AODs and the mechanically steered method in terms of access time, cost, and efficiency.

  13. Effect of film thickness on the magneto-structural properties of ion beam sputtered transition metal-metalloid FeCoNbB/Si (100) alloy thin films

    NASA Astrophysics Data System (ADS)

    Gupta, Pooja; Tripathi, Yagyanidhi; Kumar, Dileep; Rai, S. K.; Gupta, Mukul; Reddy, V. R.; Svec, Peter

    2016-08-01

    The structure and magnetic properties of ion beam sputtered transition metal-metalloid FeCoNbB/Si(100) alloy thin film have been studied as a function of film thickness using complementary techniques of x-ray reflectivity (XRR), grazing incidence x-ray diffraction, and magneto optical Kerr effect. Thicknesses of the films range from ˜200 to 1500 Å. The coercivity of all the films ranges between 4 and 14 Oe, which suggests soft magnetic nature of FeCoNbB/Si thin films. Films with thickness up to 800 Å are amorphous in nature and are found to possess uniaxial magnetic anisotropy in the film plane, although no magnetic field was applied during deposition. The presence of the two fold symmetry in such amorphous thin films may be attributed to quenched-in stresses developed during deposition. Upon increasing the film thickness to ˜1200 Å and above, the structure of FeCoNbB films transforms from amorphous to partially nanocrystalline structure and has bcc-FeCo nanocrystalline phase dispersed in remaining amorphous matrix. The crystalline volume fraction (cvf) of the films is found to be proportional to the film thickness. Azimuthal angle dependence of remanence confirms the presence of in-plane four-fold anisotropy (FFA) in the crystalline film with cvf ˜75%. Synchrotron x-ray diffraction measurement using area detector suggests random orientation of crystallites and thus clearly establishes that FFA is not related to texture/cubic symmetry in such polycrystalline thin films. As supported by asymmetric Bragg diffraction measurements, the origin of FFA in such partially crystalline thin film is ascribed to the additional compressive stresses developed in the film upon crystallization. Results indicate that promising soft magnetic properties in such films can be optimized by controlling the film thickness. The revelation of controllable and tunable anisotropy suggests that FeCoNbB thin films can have potential application in electromagnetic applications.

  14. p-type conduction from Sb-doped ZnO thin films grown by dual ion beam sputtering in the absence of oxygen ambient

    SciTech Connect

    Kumar Pandey, Sushil; Kumar Pandey, Saurabh; Awasthi, Vishnu; Kumar, Ashish; Mukherjee, Shaibal; Deshpande, Uday P.; Gupta, Mukul

    2013-10-28

    Sb-doped ZnO (SZO) thin films were deposited on c-plane sapphire substrates by dual ion beam sputtering deposition system in the absence of oxygen ambient. The electrical, structural, morphological, and elemental properties of SZO thin films were studied for films grown at different substrate temperatures ranging from 200 °C to 600 °C and then annealed in situ at 800 °C under vacuum (pressure ∼5 × 10{sup −8} mbar). Films grown for temperature range of 200–500 °C showed p-type conduction with hole concentration of 1.374 × 10{sup 16} to 5.538 × 10{sup 16} cm{sup −3}, resistivity of 66.733–12.758 Ω cm, and carrier mobility of 4.964–8.846 cm{sup 2} V{sup −1} s{sup −1} at room temperature. However, the film grown at 600 °C showed n-type behavior. Additionally, current-voltage (I–V) characteristic of p-ZnO/n-Si heterojunction showed a diode-like behavior, and that further confirmed the p-type conduction in ZnO by Sb doping. X-ray diffraction measurements showed that all SZO films had (002) preferred crystal orientation. X-ray photoelectron spectroscopy analysis confirmed the formation of Sb{sub Zn}–2V{sub Zn} complex caused acceptor-like behavior in SZO films.

  15. Investigation of the High Mobility IGZO Thin Films by Using Co-Sputtering Method

    PubMed Central

    Hsu, Chao-Ming; Tzou, Wen-Cheng; Yang, Cheng-Fu; Liou, Yu-Jhen

    2015-01-01

    High transmittance ratio in visible range, low resistivity, and high mobility of IGZO thin films were prepared at room temperature for 30 min by co-sputtering of Zn2Ga2O5 (Ga2O3 + 2 ZnO, GZO) ceramic and In2O3 ceramic at the same time. The deposition power of pure In2O3 ceramic target was fixed at 100 W and the deposition power of GZO ceramic target was changed from 80 W to 140 W. We chose to investigate the deposition power of GZO ceramic target on the properties of IGZO thin films. From the SEM observations, all of the deposited IGZO thin films showed a very smooth and featureless surface. From the measurements of XRD patterns, only the amorphous structure was observed. We aimed to show that the deposition power of GZO ceramic target had large effect on the Eg values, Hall mobility, carrier concentration, and resistivity of IGZO thin films. Secondary ion mass spectrometry (SIMS) analysis in the thicknesses’ profile of IGZO thin films found that In and Ga elements were uniform distribution and Zn element were non-uniform distribution. The SIMS analysis results also showed the concentrations of Ga and Zn elements increased and the concentrations of In element was almost unchanged with increasing deposition power.

  16. Method of enhancing cyclotron beam intensity

    DOEpatents

    Hudson, Ed D.; Mallory, Merrit L.

    1977-01-01

    When an easily ionized support gas such as xenon is added to the cold cathode in sources of the Oak Ridge Isochronous Cyclotron, large beam enhancements are produced. For example, .sup.20 Ne.sup.7+ is increased from 0.05 enA to 27 enA, and .sup.16 O.sup.5+ intensities in excess of 35 e.mu.A have been extracted for periods up to 30 minutes. Approximately 0.15 cc/min of the easily ionized support gas is supplied to the ion source through a separate gas feed line and the primary gas flow is reduced by about 30%.

  17. An innovative experimental setup for the measurement of sputtering yield induced by keV energy ions

    SciTech Connect

    Salou, P.; Lebius, H.; Benyagoub, A.; Langlinay, T.; Lelièvre, D.; Ban-d’Etat, B.

    2013-09-15

    An innovative experimental equipment allowing to study the sputtering induced by ion beam irradiation is presented. The sputtered particles are collected on a catcher which is analyzed in situ by Auger electron spectroscopy without breaking the ultra high vacuum (less than 10{sup −9} mbar), avoiding thus any problem linked to possible contamination. This method allows to measure the angular distribution of sputtering yield. It is now possible to study the sputtering of many elements such as carbon based materials. Preliminary results are presented in the case of highly oriented pyrolytic graphite and tungsten irradiated by an Ar{sup +} beam at 2.8 keV and 7 keV, respectively.

  18. Multi-Scale-Porosity TiO2 scaffolds grown by innovative sputtering methods for high throughput hybrid photovoltaics.

    PubMed

    Sanzaro, Salvatore; Smecca, Emanuele; Mannino, Giovanni; Bongiorno, Corrado; Pellegrino, Giovanna; Neri, Fortunato; Malandrino, Graziella; Catalano, Maria Rita; Condorelli, Guglielmo Guido; Iacobellis, Rosabianca; De Marco, Luisa; Spinella, Corrado; La Magna, Antonino; Alberti, Alessandra

    2016-12-21

    We propose an up-scalable, reliable, contamination-free, rod-like TiO2 material grown by a new method based on sputtering deposition concepts which offers a multi-scale porosity, namely: an intra-rods nano-porosity (1-5 nm) arising from the Thornton's conditions and an extra-rods meso-porosity (10-50 nm) originating from the spatial separation of the Titanium and Oxygen sources combined with a grazing Ti flux. The procedure is simple, since it does not require any template layer to trigger the nano-structuring, and versatile, since porosity and layer thickness can be easily tuned; it is empowered by the lack of contaminations/solvents and by the structural stability of the material (at least) up to 500 °C. Our material gains porosity, stability and infiltration capability superior if compared to conventionally sputtered TiO2 layers. Its competition level with chemically synthesized reference counterparts is doubly demonstrated: in Dye Sensitized Solar Cells, by the infiltration and chemisorption of N-719 dye (∼1 × 10(20) molecules/cm(3)); and in Perovskite Solar Cells, by the capillary infiltration of solution processed CH3NH3PbI3 which allowed reaching efficiency of 11.7%. Based on the demonstrated attitude of the material to be functionalized, its surface activity could be differently tailored on other molecules or gas species or liquids to enlarge the range of application in different fields.

  19. Multi-Scale-Porosity TiO2 scaffolds grown by innovative sputtering methods for high throughput hybrid photovoltaics

    PubMed Central

    Sanzaro, Salvatore; Smecca, Emanuele; Mannino, Giovanni; Bongiorno, Corrado; Pellegrino, Giovanna; Neri, Fortunato; Malandrino, Graziella; Catalano, Maria Rita; Condorelli, Guglielmo Guido; Iacobellis, Rosabianca; De Marco, Luisa; Spinella, Corrado; La Magna, Antonino; Alberti, Alessandra

    2016-01-01

    We propose an up-scalable, reliable, contamination-free, rod-like TiO2 material grown by a new method based on sputtering deposition concepts which offers a multi-scale porosity, namely: an intra-rods nano-porosity (1–5 nm) arising from the Thornton’s conditions and an extra-rods meso-porosity (10–50 nm) originating from the spatial separation of the Titanium and Oxygen sources combined with a grazing Ti flux. The procedure is simple, since it does not require any template layer to trigger the nano-structuring, and versatile, since porosity and layer thickness can be easily tuned; it is empowered by the lack of contaminations/solvents and by the structural stability of the material (at least) up to 500 °C. Our material gains porosity, stability and infiltration capability superior if compared to conventionally sputtered TiO2 layers. Its competition level with chemically synthesized reference counterparts is doubly demonstrated: in Dye Sensitized Solar Cells, by the infiltration and chemisorption of N-719 dye (∼1 × 1020 molecules/cm3); and in Perovskite Solar Cells, by the capillary infiltration of solution processed CH3NH3PbI3 which allowed reaching efficiency of 11.7%. Based on the demonstrated attitude of the material to be functionalized, its surface activity could be differently tailored on other molecules or gas species or liquids to enlarge the range of application in different fields. PMID:28000743

  20. Multi-Scale-Porosity TiO2 scaffolds grown by innovative sputtering methods for high throughput hybrid photovoltaics

    NASA Astrophysics Data System (ADS)

    Sanzaro, Salvatore; Smecca, Emanuele; Mannino, Giovanni; Bongiorno, Corrado; Pellegrino, Giovanna; Neri, Fortunato; Malandrino, Graziella; Catalano, Maria Rita; Condorelli, Guglielmo Guido; Iacobellis, Rosabianca; De Marco, Luisa; Spinella, Corrado; La Magna, Antonino; Alberti, Alessandra

    2016-12-01

    We propose an up-scalable, reliable, contamination-free, rod-like TiO2 material grown by a new method based on sputtering deposition concepts which offers a multi-scale porosity, namely: an intra-rods nano-porosity (1–5 nm) arising from the Thornton’s conditions and an extra-rods meso-porosity (10–50 nm) originating from the spatial separation of the Titanium and Oxygen sources combined with a grazing Ti flux. The procedure is simple, since it does not require any template layer to trigger the nano-structuring, and versatile, since porosity and layer thickness can be easily tuned; it is empowered by the lack of contaminations/solvents and by the structural stability of the material (at least) up to 500 °C. Our material gains porosity, stability and infiltration capability superior if compared to conventionally sputtered TiO2 layers. Its competition level with chemically synthesized reference counterparts is doubly demonstrated: in Dye Sensitized Solar Cells, by the infiltration and chemisorption of N-719 dye (∼1 × 1020 molecules/cm3); and in Perovskite Solar Cells, by the capillary infiltration of solution processed CH3NH3PbI3 which allowed reaching efficiency of 11.7%. Based on the demonstrated attitude of the material to be functionalized, its surface activity could be differently tailored on other molecules or gas species or liquids to enlarge the range of application in different fields.

  1. Fatigue Testing of Wing Beam by the Resonance Method

    NASA Technical Reports Server (NTRS)

    Bleakney, William M

    1938-01-01

    Preliminary fatigue tests on two aluminum-alloy wing-beam specimens subjected to reversed axial loading are described. The motion used consists in incorporating one or two reciprocating motors in a resonance system of which the specimen is the spring element. A description is given of the reciprocating motors, and of the method of assembling and adjusting the vibrating system. The results indicate that the method is well adapted to fatigue tests of not only uniform wing beams but also wing beams with asymmetrical local reinforcements.

  2. Accurate Method for Determining Adhesion of Cantilever Beams

    SciTech Connect

    Michalske, T.A.; de Boer, M.P.

    1999-01-08

    Using surface micromachined samples, we demonstrate the accurate measurement of cantilever beam adhesion by using test structures which are adhered over long attachment lengths. We show that this configuration has a deep energy well, such that a fracture equilibrium is easily reached. When compared to the commonly used method of determining the shortest attached beam, the present method is much less sensitive to variations in surface topography or to details of capillary drying.

  3. Iodine Beam Dump Design and Fabrication

    NASA Technical Reports Server (NTRS)

    Polzin, K. A.; Bradley, D. E.

    2017-01-01

    During the testing of electric thrusters, high-energy ions impacting the walls of a vacuum chamber can cause corrosion and/or sputtering of the wall materials, which can damage the chamber walls. The sputtering can also introduce the constituent materials of the chamber walls into an experiment, with those materials potentially migrating back to the test article and coating it with contaminants over time. The typical method employed in this situation is to install a beam dump fabricated from materials that have a lower sputter yield, thus reducing the amount of foreign material that could migrate towards the test article or deposit on anything else present in the vacuum facility.

  4. A method of calculating the ultimate strength of continuous beams

    NASA Technical Reports Server (NTRS)

    Newlin, J A; Trayer, George W

    1931-01-01

    The purpose of this study was to investigate the strength of continuous beams after the elastic limit has been passed. As a result, a method of calculation, which is applicable to maximum load conditions, has been developed. The method is simpler than the methods now in use and it applies properly to conditions where the present methods fail to apply.

  5. New method of beam bunching in free-ion lasers

    SciTech Connect

    Bessonov, E.G.

    1995-12-31

    An effective ion beam bunching method is suggested. This method is based on a selective interaction of line spectrum laser light (e.g. axial mode structure light) with non-fully stripped ion beam cooled in a storage rings, arranging the ion beam in layers in radial direction of an energy-longitudinal coordinate plane and following rotation of the beam at the right angle after switching on the RF cavity or undulator grouper/buncher. Laser cooling of the ion beam can be used at this position after switching off the resonator to decrease the energy spread caused by accelerating field of the resonator. A relativistic multilayer ion mirror will be produced this way. Both monochromatic laser beams and intermediate monochromaticity and bandwidth light sources of spontaneous incoherent radiation can be used for production of hard and high power electromagnetic radiation by reflection from this mirror. The reflectivity of the mirror is rather high because of the cross-section of the backward Rayleigh scattering of photon light by non-fully stripped relativistic ions ({approximately}{lambda}{sup 2}) is much greater ({approximately} 10{divided_by}15 orders) then Thompson one ({approximately} r{sub e}{sup 2}). This position is valid even in the case of non-monochromatic laser light ({Delta}{omega}/{omega} {approximately} 10{sup -4}). Ion cooling both in longitudinal plane and three-dimensional radiation ion cooling had been proposed based on this observation. The using of these cooling techniques will permit to store high current and low emittance relativistic ion beams in storage rings. The bunched ion beam can be used in ordinary Free-Ion Lasers as well. After bunching the ion beam can be extracted from the storage ring in this case. Storage rings with zero momentum compaction function will permit to keep bunching of the ion beam for a long time.

  6. A fast Gaussian beam tracing method for reflection and refraction of general vectorial astigmatic Gaussian beams from general curved surfaces

    NASA Astrophysics Data System (ADS)

    Rohani, A.; Shishegar, A. A.; Safavi-Naeini, S.

    2004-03-01

    A fast Gaussian beam tracing method for general vectorial astigmatic Gaussian beams based on phase matching has been formulated. Given the parameters of a vectorial Gaussian beam in its principal coordinate system the parameters of the reflected and refracted beams from a general curved surface (with general constitutive parameters) are found. The reflection and transmission of such beams from and through passive photonic structures such as lenses, mirrors and prisms can then be found by considering multiple reflections and transmissions.

  7. Ion-beam technologies

    SciTech Connect

    Fenske, G.R.

    1993-01-01

    This compilation of figures and diagrams reviews processes for depositing diamond/diamond-like carbon films. Processes addressed are chemical vapor deposition (HFCVD, PACVD, etc.), plasma vapor deposition (plasma sputtering, ion beam sputtering, evaporation, etc.), low-energy ion implantation, and hybrid processes (biased sputtering, IBAD, biased HFCVD, etc.). The tribological performance of coatings produced by different means is discussed.

  8. LASER BEAMS: Calculation of the laser-beam M2 factor by the method of moments

    NASA Astrophysics Data System (ADS)

    Potemkin, A. K.; Khazanov, E. A.

    2005-11-01

    The method is proposed for calculating the M2 factor by using the averaged description of wave beams (the method of moments). The values of M2 are calculated for the super-Gaussian intensity distribution with phase distortions caused by the electron and thermal self-focusing and spherical aberration.

  9. Gaussian beam profile shaping apparatus, method therefor and evaluation thereof

    DOEpatents

    Dickey, Fred M.; Holswade, Scott C.; Romero, Louis A.

    1999-01-01

    A method and apparatus maps a Gaussian beam into a beam with a uniform irradiance profile by exploiting the Fourier transform properties of lenses. A phase element imparts a design phase onto an input beam and the output optical field from a lens is then the Fourier transform of the input beam and the phase function from the phase element. The phase element is selected in accordance with a dimensionless parameter which is dependent upon the radius of the incoming beam, the desired spot shape, the focal length of the lens and the wavelength of the input beam. This dimensionless parameter can also be used to evaluate the quality of a system. In order to control the radius of the incoming beam, optics such as a telescope can be employed. The size of the target spot and the focal length can be altered by exchanging the transform lens, but the dimensionless parameter will remain the same. The quality of the system, and hence the value of the dimensionless parameter, can be altered by exchanging the phase element. The dimensionless parameter provides design guidance, system evaluation, and indication as to how to improve a given system.

  10. Gaussian beam profile shaping apparatus, method therefore and evaluation thereof

    DOEpatents

    Dickey, F.M.; Holswade, S.C.; Romero, L.A.

    1999-01-26

    A method and apparatus maps a Gaussian beam into a beam with a uniform irradiance profile by exploiting the Fourier transform properties of lenses. A phase element imparts a design phase onto an input beam and the output optical field from a lens is then the Fourier transform of the input beam and the phase function from the phase element. The phase element is selected in accordance with a dimensionless parameter which is dependent upon the radius of the incoming beam, the desired spot shape, the focal length of the lens and the wavelength of the input beam. This dimensionless parameter can also be used to evaluate the quality of a system. In order to control the radius of the incoming beam, optics such as a telescope can be employed. The size of the target spot and the focal length can be altered by exchanging the transform lens, but the dimensionless parameter will remain the same. The quality of the system, and hence the value of the dimensionless parameter, can be altered by exchanging the phase element. The dimensionless parameter provides design guidance, system evaluation, and indication as to how to improve a given system. 27 figs.

  11. Beam propagation method analysis of optical waveguide lenses.

    PubMed

    Ishikawa, A; Izutsu, M; Sueta, T

    1990-12-01

    Focusing characteristics of optical waveguide lenses are analyzed by the beam propagation method (BPM) instead of the ray tracing method. By use of the BPM, we can observe field distributions of a converging or diverging light beam after it passes through a waveguide lens. Variations of the spot width and magnitude of diffraction can immediately be evaluated with this calculation. The BPM calculations are used for a mode-index, Luneburg, and geodesic lenses. For the application of the method to the geodesic lens, the surface deformation is converted into an equivalent index.

  12. A SIMPLE METHOD FOR MEASURING THE ELECTRON-BEAM MAGNETIZATION

    SciTech Connect

    Halavanau, A.; Qiang, G.; Wisniewski, E.; Ha, G.; Power, J.; Piot, P.

    2016-10-18

    There are a number of projects that require magnetized beams, such as electron cooling or aiding in “flat” beam transforms. Here we explore a simple technique to characterize the magnetization, observed through the angular momentum of magnetized beams. These beams are produced through photoemission. The generating drive laser first passes through microlens arrays (fly-eye light condensers) to form a transversely modulated pulse incident on the photocathode surface [1]. The resulting charge distribution is then accelerated from the photocathode. We explore the evolution of the pattern via the relative shearing of the beamlets, providing information about the angular momentum. This method is illustrated through numerical simulations and preliminary measurements carried out at the Argonne Wakefield Accelerator (AWA) facility are presented.

  13. Method for separating FEL output beams from long wavelength radiation

    DOEpatents

    Neil, George; Shinn, Michelle D.; Gubeli, Joseph

    2016-04-26

    A method for improving the output beam quality of a free electron laser (FEL) by reducing the amount of emission at wavelengths longer than the electron pulse length and reducing the amount of edge radiation. A mirror constructed of thermally conductive material and having an aperture therein is placed at an oblique angle with respect to the beam downstream of the bending magnet but before any sensitive use of the FEL beam. The aperture in the mirror is sized to deflect emission longer than the wavelength of the FEL output while having a minor impact on the FEL output beam. A properly sized aperture will enable the FEL radiation, which is coherent and generally at a much shorter wavelength than the bending radiations, to pass through the aperture mirror. The much higher divergence bending radiations will subsequently strike the aperture mirror and be reflected safely out of the way.

  14. The effect of Si content on structure and mechanical features of silicon-containing calcium-phosphate-based films deposited by RF-magnetron sputtering on titanium substrate treated by pulsed electron beam

    NASA Astrophysics Data System (ADS)

    Surmeneva, M.; Tyurin, A.; Mukhametkaliyev, T.; Teresov, A.; Koval, A.; Pirozhkova, T.; Shuvarin, I.; Chudinova, E.; Surmenev, R.

    2015-11-01

    Silicon-containing calcium phosphate (Si-CaP) coatings were fabricated by radio frequency (rf) magnetron sputtering using the targets prepared from hydroxyapatite (HA) powder with different silicon content. A powder of Si-HA (Ca10(PO4)6-x(SiO4)x(OH)2-x, x=0.5 and 1.72) was prepared by mechanochemical activation and then used as a precursor-powder to prepare a target for sputtering. The titanium substrate was acid etched and treated with pulsed electron beam with an energy density of 15 J/cm2. The average crystallite size as determined by XRD was 28 nm for the coatings obtained using the target prepared from the Si-HA powder (x=0.5), whereas Si-CaP (Si-HA powder x=1.72) films showed an amorphous structure. The nanohardness and the Young's modulus of the Si-CaP coating (x=0.5) deposited on titanium treated by pulsed electron beam are enhanced to 4.5 and 113 GPa compared to titanium substrate. Increase of Si content resulted in a dramatic decrease of the nanohardness and Young's modulus of Si-CaP films. However, Si-CaP coatings with the highest Si content revealed significantly lower values of elastic modulus, but slightly higher values of H/E and H3/E2 than did the non-coated specimens. Rf-magnetron sputtering allowed us to produce Si- CaP coatings with higher nanohardness and lower elastic modulus compared to titanium substrate.

  15. Characterization of Cu-Sn/Pb diffusion zones of microelectronic contacts by means of electron probe microanalysis and ion beam sputtering.

    PubMed

    Däbritz, S; Hauffe, W

    1995-10-01

    Physical parameters of material, such as strength and electrical conductivity, can be influenced considerably by the intermetallic compounds formed by diffusion in soldered microelectronic contacts between Cu and Sn/ Pb solders. Therefore, formation and growth of these contact zones were systematically investigated on model specimens in dependence on temperature, time and chemical tin-lead concentration of the solders by means of electron probe microanalytical investigations and characterized by phase growth constants. Compared with the conventional metallographic specimen preparation method, the ion beam etching of the contact surfaces proves to be an excellently suitable means for representing the microstructure after the cooling of the samples. Moreover, the three-dimensional grain structure and technologically caused defects in the contact can be shown by ion beam slope cutting. Effects as e.g. the dendritic growth and Kirkendall pores which increasingly occur at higher temperatures are successfully proved.

  16. Studies of the Cr-CrN coating characteristics formed by means of the magnetron sputtering method from bulk target

    NASA Astrophysics Data System (ADS)

    Kachalin, G. V.; Mednikov, A. F.; Tkhabisimov, A. B.; Sidorov, S. V.

    2017-07-01

    The paper presents the study’s results of ion-plasma chromium based coating characteristics produced on blade steel samples 12Kh13 and EI961 by means of the magnetron sputtering method from the bulk “hot” target. A set of metallographic studies and erosion tests of coatings were carried out using the research equipment URI (unique research installation) “Hydroshock rig Erosion-M” of NRU “MPEI”. Cr-CrN based coatings have a layered structure; thickness of intermediate Cr layers ranges from 0.7 to 1.7 μm, thickness of nitride layers CrN ranges from 1.5 to 4 μm, while the overall coating thickness is 17.0-21.5 μm coating microhardness is 1830-1880 HV0.05. The resulting coatings are found to increase 1.5 times the incubation period duration of erosion wear for steels 12Kh13 and EI961; they reduce the maximum erosion rate 1.3 times, and the steady erosion rate - 1.5 times.

  17. Reduction of residual gas in a sputtering system by auxiliary sputter of rare-earth metal

    NASA Astrophysics Data System (ADS)

    Li, Dejie

    2002-01-01

    In film deposition by sputtering, the oxidation and nitrification of the sputtered material lead to degradation of film quality, particularly with respect to metal sulfide films. We propose to use auxiliary sputtering as a method to produce a fresh film of rare-earth metal, usually dysprosium (Dy), that absorbs the active gases in a sputtering system, greatly reducing the background pressure and protecting the film from oxidation and nitrification effectively. The influence of the auxiliary sputtering power consumption, sputtering time, and medium gas pressure on the background pressure in the vacuum chamber is investigated in detail. If the auxiliary sputtering power exceeds 120 W and the sputtering time is more than 4 min, the background pressure is only one fourth of the ultimate pressure pumped by an oil diffusion pump. The absorption activity of the sputtered Dy film continues at least an hour after completion of the auxiliary sputter. Applied to film deposition of Ti and ZnS, this technique has been proven to be effective. For the Ti film, the total content of N and O is reduced from 45% to 20% when the auxiliary sputtering power of Dy is 120 W, and the sputtering time is 20 min. In the case of ZnS, the content of O is reduced from 8% to 2%.

  18. Sputtering and ion plating

    NASA Technical Reports Server (NTRS)

    1972-01-01

    The proceedings of a conference on sputtering and ion plating are presented. Subjects discussed are: (1) concepts and applications of ion plating, (2) sputtering for deposition of solid film lubricants, (3) commercial ion plating equipment, (4) industrial potential for ion plating and sputtering, and (5) fundamentals of RF and DC sputtering.

  19. Method of deposition by molecular beam epitaxy

    DOEpatents

    Chalmers, Scott A.; Killeen, Kevin P.; Lear, Kevin L.

    1995-01-01

    A method is described for reproducibly controlling layer thickness and varying layer composition in an MBE deposition process. In particular, the present invention includes epitaxially depositing a plurality of layers of material on a substrate with a plurality of growth cycles whereby the average of the instantaneous growth rates for each growth cycle and from one growth cycle to the next remains substantially constant as a function of time.

  20. Method of deposition by molecular beam epitaxy

    DOEpatents

    Chalmers, S.A.; Killeen, K.P.; Lear, K.L.

    1995-01-10

    A method is described for reproducibly controlling layer thickness and varying layer composition in an MBE deposition process. In particular, the present invention includes epitaxially depositing a plurality of layers of material on a substrate with a plurality of growth cycles whereby the average of the instantaneous growth rates for each growth cycle and from one growth cycle to the next remains substantially constant as a function of time. 9 figures.

  1. Method to improve optical parametric oscillator beam quality

    DOEpatents

    Smith, Arlee V.; Alford, William J.; Bowers, Mark S.

    2003-11-11

    A method to improving optical parametric oscillator (OPO) beam quality having an optical pump, which generates a pump beam at a pump frequency greater than a desired signal frequency, a nonlinear optical medium oriented so that a signal wave at the desired signal frequency and a corresponding idler wave are produced when the pump beam (wave) propagates through the nonlinear optical medium, resulting in beam walk off of the signal and idler waves, and an optical cavity which directs the signal wave to repeatedly pass through the nonlinear optical medium, said optical cavity comprising an equivalently even number of non-planar mirrors that produce image rotation on each pass through the nonlinear optical medium. Utilizing beam walk off where the signal wave and said idler wave have nonparallel Poynting vectors in the nonlinear medium and image rotation, a correlation zone of distance equal to approximately .rho.L.sub.crystal is created which, through multiple passes through the nonlinear medium, improves the beam quality of the OPO output.

  2. A new method for generating a hollow Gaussian beam

    NASA Astrophysics Data System (ADS)

    Wei, Cun; Lu, Xingyuan; Wu, Gaofeng; Wang, Fei; Cai, Yangjian

    2014-04-01

    Hollow Gaussian beam (HGB) was introduced 10 years ago (Cai et al. in Opt Lett 28:1084, 2003). In this paper, we introduce a new method for generating a HGB through transforming a Laguerre-Gaussian beam with radial index 0 and azimuthal index l into a HGB with mode n = l/2. Furthermore, we report experimental generation of a HGB based on the proposed method, and we carry out experimental study of the focusing properties of the generated HGB. Our experimental results agree well with the theoretical predictions.

  3. Thickness Effects of TiC Interlayer on Tribological Properties of Diamond-Like Carbon Prepared by Unbalanced Magnetron Sputtering Method.

    PubMed

    Park, Chulmin; Lee, Jaehyeong; Park, Yong Seob

    2015-11-01

    We investigated the tribological properties of diamond-like carbon (DLC) films prepared with TiC interlayer of various thicknesses as the adhesive layer. DLC and TiC thin films were prepared using unbalanced magnetron (UBM) sputtering method using graphite and titanium as targets. TiC films as the interlayer were deposited under DLC films and various physical, tribological, and structural properties of the films fabricated with various TiC interlayer thicknesses were investigated. With various TiC interlayer thicknesses under DLC films, the tribological properties of films were improved with increasing thickness and the DLC/TiC layer fabricated by unbalanced magnetron sputtering method are exhibited maximum high hardness over 27 GPa and high elastic modulus over 242 GPa, and a smooth surface below 0.09 nm.

  4. Magnetron sputtering source

    DOEpatents

    Makowiecki, D.M.; McKernan, M.A.; Grabner, R.F.; Ramsey, P.B.

    1994-08-02

    A magnetron sputtering source for sputtering coating substrates includes a high thermal conductivity electrically insulating ceramic and magnetically attached sputter target which can eliminate vacuum sealing and direct fluid cooling of the cathode assembly. The magnetron sputtering source design results in greater compactness, improved operating characteristics, greater versatility, and low fabrication cost. The design easily retrofits most sputtering apparatuses and provides for safe, easy, and cost effective target replacement, installation, and removal. 12 figs.

  5. Magnetron sputtering source

    DOEpatents

    Makowiecki, Daniel M.; McKernan, Mark A.; Grabner, R. Fred; Ramsey, Philip B.

    1994-01-01

    A magnetron sputtering source for sputtering coating substrates includes a high thermal conductivity electrically insulating ceramic and magnetically attached sputter target which can eliminate vacuum sealing and direct fluid cooling of the cathode assembly. The magnetron sputtering source design results in greater compactness, improved operating characteristics, greater versatility, and low fabrication cost. The design easily retrofits most sputtering apparatuses and provides for safe, easy, and cost effective target replacement, installation, and removal.

  6. Ion beam texturing

    NASA Technical Reports Server (NTRS)

    Hudson, W. R.

    1976-01-01

    A microscopic surface texture is created by sputter etching a surface while simultaneously sputter depositing a lower sputter yield material onto the surface. A xenon ion beam source has been used to perform this texturing process on samples as large as three centimeters in diameter. Ion beam textured surface structures have been characterized with SEM photomicrographs for a large number of materials including Cu, Al, Si, Ti, Ni, Fe, Stainless steel, Au, and Ag. Surfaces have been textured using a variety of low sputter yield materials - Ta, Mo, Nb, and Ti. The initial stages of the texture creation have been documented, and the technique of ion beam sputter removal of any remaining deposited material has been studied. A number of other texturing parameters have been studied such as the variation of the texture with ion beam power, surface temperature, and the rate of texture growth with sputter etching time.

  7. Reactively sputtered thin film photovoltaic devices

    NASA Technical Reports Server (NTRS)

    Hsieh, E. J.

    1975-01-01

    The feasibility of a reactively sputtered thin film CdS - Cu2S solar cell is proven. Identification of the reactively sputtered Cu2S film is made by X-ray diffractometer and spectro-transmission measurements. Because of its simplicity, economical use of material, and high yield, the reactive sputtering process promises to be a low cost method for producing CdS - Cu2S solar cells.

  8. Method and apparatus to monitor a beam of ionizing radiation

    DOEpatents

    Blackburn, Brandon W.; Chichester, David L.; Watson, Scott M.; Johnson, James T.; Kinlaw, Mathew T.

    2015-06-02

    Methods and apparatus to capture images of fluorescence generated by ionizing radiation and determine a position of a beam of ionizing radiation generating the fluorescence from the captured images. In one embodiment, the fluorescence is the result of ionization and recombination of nitrogen in air.

  9. High-mobility ZrInO thin-film transistor prepared by an all-DC-sputtering method at room temperature.

    PubMed

    Xiao, Peng; Dong, Ting; Lan, Linfeng; Lin, Zhenguo; Song, Wei; Luo, Dongxiang; Xu, Miao; Peng, Junbiao

    2016-04-27

    Thin-film transistors (TFTs) with zirconium-doped indium oxide (ZrInO) semiconductor were successfully fabricated by an all-DC-sputtering method at room temperature. The ZrInO TFT without any intentionally annealing steps exhibited a high saturation mobility of 25.1 cm(2)V(-1)s(-1). The threshold voltage shift was only 0.35 V for the ZrInO TFT under positive gate bias stress for 1 hour. Detailed studies showed that the room-temperature ZrInO thin film was in the amorphous state with low carrier density because of the strong bonding strength of Zr-O. The room-temperature process is attractive for its compatibility with almost all kinds of the flexible substrates, and the DC sputtering process is good for the production efficiency improvement and the fabrication cost reduction.

  10. A method for generating double-ring-shaped vector beams

    NASA Astrophysics Data System (ADS)

    Huan, Chen; Xiao-Hui, Ling; Zhi-Hong, Chen; Qian-Guang, Li; Hao, Lv; Hua-Qing, Yu; Xu-Nong, Yi

    2016-07-01

    We propose a method for generating double-ring-shaped vector beams. A step phase introduced by a spatial light modulator (SLM) first makes the incident laser beam have a nodal cycle. This phase is dynamic in nature because it depends on the optical length. Then a Pancharatnam-Berry phase (PBP) optical element is used to manipulate the local polarization of the optical field by modulating the geometric phase. The experimental results show that this scheme can effectively create double-ring-shaped vector beams. It provides much greater flexibility to manipulate the phase and polarization by simultaneously modulating the dynamic and the geometric phases. Project supported by the National Natural Science Foundation of China (Grant No. 11547017), the Hubei Engineering University Research Foundation, China (Grant No. z2014001), and the Natural Science Foundation of Hubei Province, China (Grant No. 2014CFB578).

  11. Quantitative cell imaging using single beam phase retrieval method

    NASA Astrophysics Data System (ADS)

    Anand, Arun; Chhaniwal, Vani; Javidi, Bahram

    2011-06-01

    Quantitative three-dimensional imaging of cells can provide important information about their morphology as well as their dynamics, which will be useful in studying their behavior under various conditions. There are several microscopic techniques to image unstained, semi-transparent specimens, by converting the phase information into intensity information. But most of the quantitative phase contrast imaging techniques is realized either by using interference of the object wavefront with a known reference beam or using phase shifting interferometry. A two-beam interferometric method is challenging to implement especially with low coherent sources and it also requires a fine adjustment of beams to achieve high contrast fringes. In this letter, the development of a single beam phase retrieval microscopy technique for quantitative phase contrast imaging of cells using multiple intensity samplings of a volume speckle field in the axial direction is described. Single beam illumination with multiple intensity samplings provides fast convergence and a unique solution of the object wavefront. Three-dimensional thickness profiles of different cells such as red blood cells and onion skin cells were reconstructed using this technique with an axial resolution of the order of several nanometers.

  12. Annealing dependence of residual stress and optical properties of TiO2 thin film deposited by different deposition methods.

    PubMed

    Chen, Hsi-Chao; Lee, Kuan-Shiang; Lee, Cheng-Chung

    2008-05-01

    Titanium oxide (TiO(2)) thin films were prepared by different deposition methods. The methods were E-gun evaporation with ion-assisted deposition (IAD), radio-frequency (RF) ion-beam sputtering, and direct current (DC) magnetron sputtering. Residual stress was released after annealing the films deposited by RF ion-beam or DC magnetron sputtering but not evaporation, and the extinction coefficient varied significantly. The surface roughness of the evaporated films exceeded that of both sputtered films. At the annealing temperature of 300 degrees C, anatase crystallization occurred in evaporated film but not in the RF ion-beam or DC magnetron-sputtered films. TiO(2) films deposited by sputtering were generally more stable during annealing than those deposited by evaporation.

  13. The frequency split method for helical cone-beam reconstruction.

    PubMed

    Shechter, G; Köhler, Th; Altman, A; Proksa, R

    2004-08-01

    A new approximate method for the utilization of redundant data in helical cone-beam CT is presented. It is based on the observation that the original WEDGE method provides excellent image quality if only little more than 180 degrees data are used for back-projection, and that significant low-frequency artifacts appear if a larger amount of redundant data are used. This degradation is compensated by the frequency split method: The low-frequency part of the image is reconstructed using little more than 180 degrees of data, while the high frequency part is reconstructed using all data. The resulting algorithm shows no cone-beam artifacts in a simulation of a 64-row scanner. It is further shown that the frequency split method hardly degrades the signal-to-noise ratio of the reconstructed images and that it behaves robustly in the presence of motion.

  14. Physical and Optical Properties of SnO2/ZnO Film Prepared by an RF Magnetron Sputtering Method.

    PubMed

    Park, Jooyoung; Lee, Ikjae; Kim, Jaeyong

    2016-03-01

    Al-, Ga-, and In-doped ZnO thin films are widely used in many technical applications, such as in solar cells and on transparent conducting oxides having high optical transmission and low resistivity values. We prepared SnO2-doped ZnO thin films on quartz substrates by using an RF magnetron sputtering method at a substrate temperature of 350 degrees C. The ratio of SnO2 to ZnO was varied from 0 to 5:5 to investigate the effects of Sn on structure and physical properties of ZnO film. The samples were synthesized at a base pressure of 1.3 x 10(-4) Pa with a working pressure of 1.3 Pa and an RF power of 40 W under Ar atmosphere. The results of X-ray diffraction data revealed that pure ZnO films exhibit a strong (002) orientation and a polycrystalline wurzite hexagonal structure. However, as increasing the SnO2 concentration, ZnO transforms to an amorphous phase. The results of the Hall-effect-measurement system revealed that the resistivity values of the films increased as increasing the doping level of SnO2. The AFM data of morphology and microstructure showed that the grain size decreased with increasing SnO2 contents while the total area of grain the boundary increased. The average value of the transmittance of the films in the visible light range was 80-95% and was shifted toward to the shorter wavelengths of the absorption edges with increasing SnO2 contents.

  15. Fast Fiber-Laser Alignment: Beam Spot-Size Method

    NASA Astrophysics Data System (ADS)

    Zhang, Rong; Guo, Jingyan; Shi, Frank G.

    2005-03-01

    A novel fast and cost-effective method is introduced for the active alignment of a fiber to a laser diode: only four easy laser beam spot-size measurements are required for moving the fiber tip from the far field to the proximity of the optimal alignment position, thus dramatically reducing the total alignment time (at least five times faster than a conventional method),as experimentally confirmed. Moreover, in contrast to the existing methods,the new method is failure-proof. The principle of the proposed method can be applied generally to any type of packages and is illustrated by an example of a butterfly package.

  16. A hybrid electron cyclotron resonance metal ion source with integrated sputter magnetron for the production of an intense Al+ ion beam

    NASA Astrophysics Data System (ADS)

    Weichsel, T.; Hartung, U.; Kopte, T.; Zschornack, G.; Kreller, M.; Philipp, A.

    2015-09-01

    A metal ion source prototype has been developed: a combination of magnetron sputter technology with 2.45 GHz electron cyclotron resonance (ECR) ion source technology—a so called magnetron ECR ion source (MECRIS). An integrated ring-shaped sputter magnetron with an Al target is acting as a powerful metal atom supply in order to produce an intense current of singly charged metal ions. Preliminary experiments show that an Al+ ion current with a density of 167 μA/cm2 is extracted from the source at an acceleration voltage of 27 kV. Spatially resolved double Langmuir probe measurements and optical emission spectroscopy were used to study the plasma states of the ion source: sputter magnetron, ECR, and MECRIS plasma. Electron density and temperature as well as Al atom density were determined as a function of microwave and sputter magnetron power. The effect of ECR heating is strongly pronounced in the center of the source. There the electron density is increased by one order of magnitude from 6 × 109 cm-3 to 6 × 1010 cm-3 and the electron temperature is enhanced from about 5 eV to 12 eV, when the ECR plasma is ignited to the magnetron plasma. Operating the magnetron at constant power, it was observed that its discharge current is raised from 1.8 A to 4.8 A, when the ECR discharge was superimposed with a microwave power of 2 kW. At the same time, the discharge voltage decreased from about 560 V to 210 V, clearly indicating a higher plasma density of the MECRIS mode. The optical emission spectrum of the MECRIS plasma is dominated by lines of excited Al atoms and shows a significant contribution of lines arising from singly ionized Al. Plasma emission photography with a CCD camera was used to prove probe measurements and to identify separated plasma emission zones originating from the ECR and magnetron discharge.

  17. A hybrid electron cyclotron resonance metal ion source with integrated sputter magnetron for the production of an intense Al⁺ ion beam.

    PubMed

    Weichsel, T; Hartung, U; Kopte, T; Zschornack, G; Kreller, M; Philipp, A

    2015-09-01

    A metal ion source prototype has been developed: a combination of magnetron sputter technology with 2.45 GHz electron cyclotron resonance (ECR) ion source technology-a so called magnetron ECR ion source (MECRIS). An integrated ring-shaped sputter magnetron with an Al target is acting as a powerful metal atom supply in order to produce an intense current of singly charged metal ions. Preliminary experiments show that an Al(+) ion current with a density of 167 μA/cm(2) is extracted from the source at an acceleration voltage of 27 kV. Spatially resolved double Langmuir probe measurements and optical emission spectroscopy were used to study the plasma states of the ion source: sputter magnetron, ECR, and MECRIS plasma. Electron density and temperature as well as Al atom density were determined as a function of microwave and sputter magnetron power. The effect of ECR heating is strongly pronounced in the center of the source. There the electron density is increased by one order of magnitude from 6 × 10(9) cm(-3) to 6 × 10(10) cm(-3) and the electron temperature is enhanced from about 5 eV to 12 eV, when the ECR plasma is ignited to the magnetron plasma. Operating the magnetron at constant power, it was observed that its discharge current is raised from 1.8 A to 4.8 A, when the ECR discharge was superimposed with a microwave power of 2 kW. At the same time, the discharge voltage decreased from about 560 V to 210 V, clearly indicating a higher plasma density of the MECRIS mode. The optical emission spectrum of the MECRIS plasma is dominated by lines of excited Al atoms and shows a significant contribution of lines arising from singly ionized Al. Plasma emission photography with a CCD camera was used to prove probe measurements and to identify separated plasma emission zones originating from the ECR and magnetron discharge.

  18. Alternative stitching method for massively parallel e-beam lithography

    NASA Astrophysics Data System (ADS)

    Brandt, Pieter; Tranquillin, Céline; Wieland, Marco; Bayle, Sébastien; Milléquant, Matthieu; Renault, Guillaume

    2015-07-01

    In this study, a stitching method other than soft edge (SE) and smart boundary (SB) is introduced and benchmarked against SE. The method is based on locally enhanced exposure latitude without throughput cost, making use of the fact that the two beams that pass through the stitching region can deposit up to 2× the nominal dose. The method requires a complex proximity effect correction that takes a preset stitching dose profile into account. Although the principle of the presented stitching method can be multibeam (lithography) systems in general, in this study, the MAPPER FLX 1200 tool is specifically considered. For the latter tool at a metal clip at minimum half-pitch of 32 nm, the stitching method effectively mitigates beam-to-beam (B2B) position errors such that they do not induce an increase in critical dimension uniformity (CDU). In other words, the same CDU can be realized inside the stitching region as outside the stitching region. For the SE method, the CDU inside is 0.3 nm higher than outside the stitching region. A 5-nm direct overlay impact from the B2B position errors cannot be reduced by a stitching strategy.

  19. Method for enhancing stability in multi-beam microscopy

    NASA Astrophysics Data System (ADS)

    Huang, Yujia; Wang, Yifan; Kuang, Cuifang; Liu, Xu

    2016-10-01

    A method based on close loop control of four degrees of freedom (4DF) is proposed to enhance angular and translational stability of beams in multi-beam microscopy including STED, RESOLFT and CARS, etc. Deviations of multi-beams can be measured and corrected by our module, which is composed of four degrees of freedom position sensitive detectors (4DF PSD) and two actuator mirrors (AM) with motor and piezo servos. An output crosslink matrix obtained by a self-learning process is used to control four actuators to compensate for 4DF independently in beam deviations. We realize a standard deviation within about 2 µm at the entrance pupil plane (a spatial optical path of 180 cm for the whole system) using a compact stabilization system, which is equivalent to around 3 nm at the sample plane under the 100×  objective lens with a focal length of 2 mm, corresponding to an improvement of stability by an order of magnitude. Our method can react fast in real time and compensate for large disturbances caused by air agitation or temperature variation.

  20. Alternative stitching method for massively parallel e-beam lithography

    NASA Astrophysics Data System (ADS)

    Brandt, Pieter; Tranquillin, Céline; Wieland, Marco; Bayle, Sébastien; Milléquant, Matthieu; Renault, Guillaume

    2015-03-01

    In this study a novel stitching method other than Soft Edge (SE) and Smart Boundary (SB) is introduced and benchmarked against SE. The method is based on locally enhanced Exposure Latitude without cost of throughput, making use of the fact that the two beams that pass through the stitching region can deposit up to 2x the nominal dose. The method requires a complex Proximity Effect Correction that takes a preset stitching dose profile into account. On a Metal clip at minimum half-pitch of 32 nm for MAPPER FLX 1200 tool specifications, the novel stitching method effectively mitigates Beam to Beam (B2B) position errors such that they do not induce increase in CD Uniformity (CDU). In other words, the same CDU can be realized inside the stitching region as outside the stitching region. For the SE method, the CDU inside is 0.3 nm higher than outside the stitching region. 5 nm direct overlay impact from B2B position errors cannot be reduced by a stitching strategy.

  1. Production of a highly charged uranium ion beam with RIKEN superconducting electron cyclotron resonance ion source

    SciTech Connect

    Higurashi, Y.; Ohnishi, J.; Nakagawa, T.; Haba, H.; Fujimaki, M.; Komiyama, M.; Kamigaito, O.; Tamura, M.; Aihara, T.; Uchiyama, A.

    2012-02-15

    A highly charged uranium (U) ion beam is produced from the RIKEN superconducting electron cyclotron resonance ion source using 18 and 28 GHz microwaves. The sputtering method is used to produce this U ion beam. The beam intensity is strongly dependent on the rod position and sputtering voltage. We observe that the emittance of U{sup 35+} for 28 GHz microwaves is almost the same as that for 18 GHz microwaves. It seems that the beam intensity of U ions produced using 28 GHz microwaves is higher than that produced using 18 GHz microwaves at the same Radio Frequency (RF) power.

  2. EQUAL OPTICAL PATH BEAM SPLITTERS BY USE OF AMPLITUDE-SPLITTING AND WAVEFRONT-SPLITTING METHODS FOR PENCIL BEAM INTERFEROMETER.

    SciTech Connect

    QIAN,S.TAKACS,P.

    2003-08-03

    A beam splitter to create two separated parallel beams is a critical unit of a pencil beam interferometer, for example the long trace profiler (LTP). The operating principle of the beam splitter can be based upon either amplitude-splitting (AS) or wavefront-splitting (WS). For precision measurements with the LTP, an equal optical path system with two parallel beams is desired. Frequency drift of the light source in a non-equal optical path system will cause the interference fringes to drift. An equal optical path prism beam splitter with an amplitude-splitting (AS-EBS) beam splitter and a phase shift beam splitter with a wavefront-splitting (WS-PSBS) are introduced. These beam splitters are well suited to the stability requirement for a pencil beam interferometer due to the characteristics of monolithic structure and equal optical path. Several techniques to produce WS-PSBS by hand are presented. In addition, the WS-PSBS using double thin plates, made from microscope cover plates, has great advantages of economy, convenience, availability and ease of adjustment over other beam splitting methods. Comparison of stability measurements made with the AS-EBS, WS-PSBS, and other beam splitters is presented.

  3. LASER BEAMS: On alternative methods for measuring the radius and propagation ratio of axially symmetric laser beams

    NASA Astrophysics Data System (ADS)

    Dementjev, Aleksandr S.; Jovaisa, A.; Silko, Galina; Ciegis, Raimondas

    2005-11-01

    Based on the developed efficient numerical methods for calculating the propagation of light beams, the alternative methods for measuring the beam radius and propagation ratio proposed in the international standard ISO 11146 are analysed. The specific calculations of the alternative beam propagation ratios Mi2 performed for a number of test beams with a complicated spatial structure showed that the correlation coefficients ci used in the international standard do not establish the universal one-to-one relation between the alternative propagation ratios Mi2 and invariant propagation ratios Mσ2 found by the method of moments.

  4. Sputtering Threshold Energies of Heavy Ions

    NASA Technical Reports Server (NTRS)

    Mantenieks, Maris A.

    1999-01-01

    Sputter erosion in ion thrusters has been measured in lifetests at discharge voltages as low as 25 V. Thruster operation at this discharge voltage results in component erosion rates sufficiently low to satisfy most mission requirements. It has been recognized that most of the internal sputtering in ion thrusters is done by doubly charged ions. Knowledge of the sputtering threshold voltage of a xenon molybdenum system would be beneficial in understanding the sputtering process as well as making more accurate calculations of the sputtering rates of ion thruster components. Sputtering threshold energies calculated from various formulations found in the literature results in values ranging from 28 to 200 eV. It is evident that some of these formulations cannot be relied upon to provide sputtering thresholds with any degree of accuracy. This paper re-examines the threshold energies measurements made in the early sixties by Askerov and Sena, and Stuart and Wehner. The threshold voltages as derived by Askerov and au have been reevaluated by using a different extrapolation method of sputter yields at low ion energies. The resulting threshold energies are in general similar to those measured by Stuart and Wehner. An empirical relationship is derived,for mercury and xenon ions for the ratio of the sputtering threshold energy to the sublimation energy as a function of the ratio of target to ion atomic mass.

  5. Method and apparatus for laser-controlled proton beam radiology

    DOEpatents

    Johnstone, C.J.

    1998-06-02

    A proton beam radiology system provides cancer treatment and proton radiography. The system includes an accelerator for producing an H{sup {minus}} beam and a laser source for generating a laser beam. A photodetachment module is located proximate the periphery of the accelerator. The photodetachment module combines the H{sup {minus}} beam and laser beam to produce a neutral beam therefrom within a subsection of the H{sup {minus}} beam. The photodetachment module emits the neutral beam along a trajectory defined by the laser beam. The photodetachment module includes a stripping foil which forms a proton beam from the neutral beam. The proton beam is delivered to a conveyance segment which transports the proton beam to a patient treatment station. The photodetachment module further includes a laser scanner which moves the laser beam along a path transverse to the cross-section of the H{sup {minus}} beam in order to form the neutral beam in subsections of the H{sup {minus}} beam. As the scanning laser moves across the H{sup {minus}} beam, it similarly varies the trajectory of the proton beam emitted from the photodetachment module and in turn varies the target location of the proton beam upon the patient. Intensity modulation of the proton beam can also be achieved by controlling the output of the laser. 9 figs.

  6. Method and apparatus for laser-controlled proton beam radiology

    DOEpatents

    Johnstone, Carol J.

    1998-01-01

    A proton beam radiology system provides cancer treatment and proton radiography. The system includes an accelerator for producing an H.sup.- beam and a laser source for generating a laser beam. A photodetachment module is located proximate the periphery of the accelerator. The photodetachment module combines the H.sup.- beam and laser beam to produce a neutral beam therefrom within a subsection of the H.sup.- beam. The photodetachment module emits the neutral beam along a trajectory defined by the laser beam. The photodetachment module includes a stripping foil which forms a proton beam from the neutral beam. The proton beam is delivered to a conveyance segment which transports the proton beam to a patient treatment station. The photodetachment module further includes a laser scanner which moves the laser beam along a path transverse to the cross-section of the H.sup.- beam in order to form the neutral beam in subsections of the H.sup.- beam. As the scanning laser moves across the H.sup.- beam, it similarly varies the trajectory of the proton beam emitted from the photodetachment module and in turn varies the target location of the proton beam upon the patient. Intensity modulation of the proton beam can also be achieved by controlling the output of the laser.

  7. Optimization method for electron beam melting and refining of metals

    NASA Astrophysics Data System (ADS)

    Donchev, Veliko; Vutova, Katia

    2014-03-01

    Pure metals and special alloys obtained by electron beam melting and refining (EBMR) in vacuum, using electron beams as a heating source, have a lot of applications in nuclear and airspace industries, electronics, medicine, etc. An analytical optimization problem for the EBMR process based on mathematical heat model is proposed. The used criterion is integral functional minimization of a partial derivative of the temperature in the metal sample. The investigated technological parameters are the electron beam power, beam radius, the metal casting velocity, etc. The optimization problem is discretized using a non-stationary heat model and corresponding adapted Pismen-Rekford numerical scheme, developed by us and multidimensional trapezional rule. Thus a discrete optimization problem is built where the criterion is a function of technological process parameters. The discrete optimization problem is heuristically solved by cluster optimization method. Corresponding software for the optimization task is developed. The proposed optimization scheme can be applied for quality improvement of the pure metals (Ta, Ti, Cu, etc.) produced by the modern and ecological-friendly EBMR process.

  8. Oxidation of Si during the growth of SiO{sub x} by ion-beam sputter deposition: In situ x-ray photoelectron spectroscopy as a function of oxygen partial pressure and deposition temperature

    SciTech Connect

    Kim, Kyung Joong; Kim, Jeong Won; Yang, Moon-Seung; Shin, Jung Hoon

    2006-10-15

    Oxidation of silicon during the growth of silicon oxide by ion beam sputter deposition was studied by in situ x-ray photoelectron spectroscopy as a function of oxygen partial pressure at various deposition temperatures below 600 deg. C. At low temperatures, the variation of incorporated oxygen content is similar to a dissociative adsorption isotherm of O{sub 2} on Si indicating that the surface-confined reaction of the deposited Si atoms with the adsorbed oxygen atoms is the main process. However, it shows a three-step variation with the oxygen partial pressure at high temperatures. The evolution of SiO species confirmed by the XPS indicates that an adsorption-induced surface reaction and a diffusion-induced internal reaction are the main pathways for the Si oxidation.

  9. Effects of the duty ratio on the niobium oxide film deposited by pulsed-DC magnetron sputtering methods.

    PubMed

    Eom, Ji Mi; Oh, Hyun Gon; Cho, Il Hwan; Kwon, Sang Jik; Cho, Eou Sik

    2013-11-01

    Niobium oxide (Nb2O5) films were deposited on p-type Si wafers and sodalime glasses at a room temperature using in-line pulsed-DC magnetron sputtering system with various duty ratios. The different duty ratio was obtained by varying the reverse voltage time of pulsed DC power from 0.5 to 2.0 micros at the fixed frequency of 200 kHz. From the structural and optical characteristics of the sputtered NbOx films, it was possible to obtain more uniform and coherent NbOx films in case of the higher reverse voltage time as a result of the cleaning effect on the Nb2O5 target surface. The electrical characteristics from the metal-insulator-semiconductor (MIS) fabricated with the NbOx films shows the leakage currents are influenced by the reverse voltage time and the Schottky barrier diode characteristics.

  10. Method to render second order beam optics programs symplectic

    SciTech Connect

    Douglas, D.; Servranckx, R.V.

    1984-10-01

    We present evidence that second order matrix-based beam optics programs violate the symplectic condition. A simple method to avoid this difficulty, based on a generating function approach to evaluating transfer maps, is described. A simple example illustrating the non-symplectricity of second order matrix methods, and the effectiveness of our solution to the problem, is provided. We conclude that it is in fact possible to bring second order matrix optics methods to a canonical form. The procedure for doing so has been implemented in the program DIMAT, and could be implemented in programs such as TRANSPORT and TURTLE, making them useful in multiturn applications. 15 refs.

  11. Method to control deposition rate instabilities—High power impulse magnetron sputtering deposition of TiO{sub 2}

    SciTech Connect

    Kossoy, Anna E-mail: anna.kossoy@gmail.com; Magnusson, Rögnvaldur L.; Tryggvason, Tryggvi K.; Leosson, Kristjan; Olafsson, Sveinn

    2015-03-15

    The authors describe how changes in shutter state (open/closed) affect sputter plasma conditions and stability of the deposition rate of Ti and TiO{sub 2} films. The films were grown by high power impulse magnetron sputtering in pure Ar and in Ar/O{sub 2} mixture from a metallic Ti target. The shutter state was found to have an effect on the pulse waveform for both pure Ar and reactive sputtering of Ti also affecting stability of TiO{sub 2} deposition rate. When the shutter opened, the shape of pulse current changed from rectangular to peak-plateau and pulse energy decreased. The authors attribute it to the change in plasma impedance and gas rarefaction originating in geometry change in front of the magnetron. TiO{sub 2} deposition rate was initially found to be high, 1.45 Å/s, and then dropped by ∼40% during the first 5 min, while for Ti the change was less obvious. Instability of deposition rate poses significant challenge for growing multilayer heterostructures. In this work, the authors suggest a way to overcome this by monitoring the integrated average energy involved in the deposition process. It is possible to calibrate and control the film thickness by monitoring the integrated pulse energy and end growth when desired integrated pulse energy level has been reached.

  12. Multitarget sequential sputtering apparatus

    NASA Technical Reports Server (NTRS)

    Shima, R. (Inventor)

    1975-01-01

    The development and characteristics of a sputtering apparatus are discussed. A potential difference is applied between the cathode and anode to produce a plasma for each target which is sputtered by accelerated ions within the plasma. The process of sputtering for various materials is described. Diagrams of the unit are provided.

  13. A hybrid electron cyclotron resonance metal ion source with integrated sputter magnetron for the production of an intense Al{sup +} ion beam

    SciTech Connect

    Weichsel, T. Hartung, U.; Kopte, T.; Zschornack, G.; Kreller, M.; Philipp, A.

    2015-09-15

    A metal ion source prototype has been developed: a combination of magnetron sputter technology with 2.45 GHz electron cyclotron resonance (ECR) ion source technology—a so called magnetron ECR ion source (MECRIS). An integrated ring-shaped sputter magnetron with an Al target is acting as a powerful metal atom supply in order to produce an intense current of singly charged metal ions. Preliminary experiments show that an Al{sup +} ion current with a density of 167 μA/cm{sup 2} is extracted from the source at an acceleration voltage of 27 kV. Spatially resolved double Langmuir probe measurements and optical emission spectroscopy were used to study the plasma states of the ion source: sputter magnetron, ECR, and MECRIS plasma. Electron density and temperature as well as Al atom density were determined as a function of microwave and sputter magnetron power. The effect of ECR heating is strongly pronounced in the center of the source. There the electron density is increased by one order of magnitude from 6 × 10{sup 9} cm{sup −3} to 6 × 10{sup 10} cm{sup −3} and the electron temperature is enhanced from about 5 eV to 12 eV, when the ECR plasma is ignited to the magnetron plasma. Operating the magnetron at constant power, it was observed that its discharge current is raised from 1.8 A to 4.8 A, when the ECR discharge was superimposed with a microwave power of 2 kW. At the same time, the discharge voltage decreased from about 560 V to 210 V, clearly indicating a higher plasma density of the MECRIS mode. The optical emission spectrum of the MECRIS plasma is dominated by lines of excited Al atoms and shows a significant contribution of lines arising from singly ionized Al. Plasma emission photography with a CCD camera was used to prove probe measurements and to identify separated plasma emission zones originating from the ECR and magnetron discharge.

  14. Fast multiscale Gaussian beam methods for wave equations in bounded convex domains

    SciTech Connect

    Bao, Gang; Lai, Jun; Qian, Jianliang

    2014-03-15

    Motivated by fast multiscale Gaussian wavepacket transforms and multiscale Gaussian beam methods which were originally designed for pure initial-value problems of wave equations, we develop fast multiscale Gaussian beam methods for initial boundary value problems of wave equations in bounded convex domains in the high frequency regime. To compute the wave propagation in bounded convex domains, we have to take into account reflecting multiscale Gaussian beams, which are accomplished by enforcing reflecting boundary conditions during beam propagation and carrying out suitable reflecting beam summation. To propagate multiscale beams efficiently, we prove that the ratio of the squared magnitude of beam amplitude and the beam width is roughly conserved, and accordingly we propose an effective indicator to identify significant beams. We also prove that the resulting multiscale Gaussian beam methods converge asymptotically. Numerical examples demonstrate the accuracy and efficiency of the method.

  15. A Green's function method for heavy ion beam transport

    NASA Technical Reports Server (NTRS)

    Shinn, J. L.; Wilson, J. W.; Schimmerling, W.; Shavers, M. R.; Miller, J.; Benton, E. V.; Frank, A. L.; Badavi, F. F.

    1995-01-01

    The use of Green's function has played a fundamental role in transport calculations for high-charge high-energy (HZE) ions. Two recent developments have greatly advanced the practical aspects of implementation of these methods. The first was the formulation of a closed-form solution as a multiple fragmentation perturbation series. The second was the effective summation of the closed-form solution through nonperturbative techniques. The nonperturbative methods have been recently extended to an inhomogeneous, two-layer transport media to simulate the lead scattering foil present in the Lawrence Berkeley Laboratories (LBL) biomedical beam line used for cancer therapy. Such inhomogeneous codes are necessary for astronaut shielding in space. The transport codes utilize the Langley Research Center atomic and nuclear database. Transport code and database evaluation are performed by comparison with experiments performed at the LBL Bevalac facility using 670 A MeV 20Ne and 600 A MeV 56Fe ion beams. The comparison with a time-of-flight and delta E detector measurement for the 20Ne beam and the plastic nuclear track detectors for 56Fe show agreement up to 35%-40% in water and aluminium targets, respectively.

  16. A Green's function method for heavy ion beam transport

    NASA Technical Reports Server (NTRS)

    Shinn, J. L.; Wilson, J. W.; Schimmerling, W.; Shavers, M. R.; Miller, J.; Benton, E. V.; Frank, A. L.; Badavi, F. F.

    1995-01-01

    The use of Green's function has played a fundamental role in transport calculations for high-charge high-energy (HZE) ions. Two recent developments have greatly advanced the practical aspects of implementation of these methods. The first was the formulation of a closed-form solution as a multiple fragmentation perturbation series. The second was the effective summation of the closed-form solution through nonperturbative techniques. The nonperturbative methods have been recently extended to an inhomogeneous, two-layer transport media to simulate the lead scattering foil present in the Lawrence Berkeley Laboratories (LBL) biomedical beam line used for cancer therapy. Such inhomogeneous codes are necessary for astronaut shielding in space. The transport codes utilize the Langley Research Center atomic and nuclear database. Transport code and database evaluation are performed by comparison with experiments performed at the LBL Bevalac facility using 670 A MeV 20Ne and 600 A MeV 56Fe ion beams. The comparison with a time-of-flight and delta E detector measurement for the 20Ne beam and the plastic nuclear track detectors for 56Fe show agreement up to 35%-40% in water and aluminium targets, respectively.

  17. Laser beam apparatus and method for analyzing solar cells

    DOEpatents

    Staebler, David L.

    1980-01-01

    A laser beam apparatus and method for analyzing, inter alia, the current versus voltage curve at the point of illumination on a solar cell and the open circuit voltage of a solar cell. The apparatus incorporates a lock-in amplifier, and a laser beam light chopper which permits the measurement of the AC current of the solar cell at an applied DC voltage at the position on the solar cell where the cell is illuminated and a feedback scheme which permits the direct scanning measurements of the open circuit voltage. The accuracy of the measurement is a function of the intensity and wavelength of the laser light with respect to the intensity and wavelength distribution of sunlight and the percentage the dark current is at the open circuit voltage to the short circuit current of the solar cell.

  18. Positron beam studies of saponite film prepared by precipitation method

    NASA Astrophysics Data System (ADS)

    Numata, K.; Sato, K.; Fujimoto, K.; Ito, K.

    2017-01-01

    Micrometer-sized saponite particles were isolated by means of gravitational sedimentation method applying Stokes’ law. The sample prepared with this method was film-like state with a thickness of ~ 30 μm and was semitransparent, indicating that the particles are homogeneously stacked all together. Positron lifetime spectroscopy using a slow positron beam yielded two components for ortho-positronium with lifetimes of 1.5 ns and 8.4 ns with the respective relative intensities of 13 % and 10 %. The results suggest that the self-assembly of the larger particles toward structural densification is suppressed for the present film in comparison with the smaller nanoparticles.

  19. Method and system for treating an interior surface of a workpiece using a charged particle beam

    DOEpatents

    Swenson, David Richard

    2007-05-23

    A method and system of treating an interior surface on an internal cavity of a workpiece using a charged particle beam. A beam deflector surface of a beam deflector is placed within the internal cavity of the workpiece and is used to redirect the charged particle beam toward the interior surface to treat the interior surface.

  20. Dependence of the specific features of two PAPVD methods: Impulse Plasma Deposition (IPD) and Pulsed Magnetron Sputtering (PMS) on the structure of Fe-Cu alloy layers

    NASA Astrophysics Data System (ADS)

    Nowakowska-Langier, Katarzyna; Chodun, Rafal; Nietubyc, Robert; Minikayev, Roman; Zdunek, Krzysztof

    2013-06-01

    This paper describes the study of the structural properties of the alloy layers prepared by two different, impulsively working PAPVD methods: the Pulsed Magnetron Sputtering (PMS) and the Impulse Plasma Deposition (IPD). The Fe-Cu alloy layers were synthesized. The results of our investigation revealed a nanocrystalline structure of the layers. The differences in the phase composition of the Fe-Cu alloy layers produced by these two methods were observed. The synthesis of the Fe-Cu layers by using the Pulsed Magnetron Sputtering method resulted in obtaining the two-phase, polycrystalline structures (fcc-Cu and bcc-Fe). In this case the clear evidence of mixing between the iron and copper atoms was not observed. The Fe-Cu layers deposited by the Impulse Plasma Deposition method were characterized by the non-equilibrium phase composition - the presence of one-phase supersaturated solid solution (fcc-Cu(Fe) or bcc-Fe(Cu)) was formed in immiscible systems. These results suggest a short-distance diffusion between the neighboring nanoparticles of the two metals (Cu and Fe) occurring during the IPD layers growth.

  1. Indirect Methods For Nuclear Astrophysics With Radioactive Nuclear Beams

    NASA Astrophysics Data System (ADS)

    Trache, Livius

    2010-03-01

    For a good understanding of nucleosynthesis and energy production in stars through reliable modeling, we need nuclear data. To obtain them is the goal of nuclear physics for astrophysics, using direct and indirect measurements. In this lecture indirect methods for nuclear astrophysics are reviewed. In particular, methods applied to extract reaction rates for H-burning in stars are treated. The Coulomb dissociation is first briefly touched, for completeness. Then I go to one-nucleon transfer reactions (the ANC method), breakup reactions at intermediate energies and decay spectroscopy (β-decay and β-delayed proton-decay). They involve the use of radioactive nuclear beams. I chose for exemplification different experiments of our Texas A&M group, each involving a different method. The experiments were done at large energies to extract selected nuclear structure information. That is in turn used to evaluate the cross sections at low energies and the reaction rates for nuclear astrophysics. I will show the specificities of each method, their complementarities and redundancies, insisting on their peculiarities when used with radioactive beams.

  2. Electron-Beam Diagnostic Methods for Hypersonic Flow Diagnostics

    NASA Technical Reports Server (NTRS)

    1994-01-01

    The purpose of this work was the evaluation of the use of electron-bean fluorescence for flow measurements during hypersonic flight. Both analytical and numerical models were developed in this investigation to evaluate quantitatively flow field imaging concepts based upon the electron beam fluorescence technique for use in flight research and wind tunnel applications. Specific models were developed for: (1) fluorescence excitation/emission for nitrogen, (2) rotational fluorescence spectrum for nitrogen, (3) single and multiple scattering of electrons in a variable density medium, (4) spatial and spectral distribution of fluorescence, (5) measurement of rotational temperature and density, (6) optical filter design for fluorescence imaging, and (7) temperature accuracy and signal acquisition time requirements. Application of these models to a typical hypersonic wind tunnel flow is presented. In particular, the capability of simulating the fluorescence resulting from electron impact ionization in a variable density nitrogen or air flow provides the capability to evaluate the design of imaging instruments for flow field mapping. The result of this analysis is a recommendation that quantitative measurements of hypersonic flow fields using electron-bean fluorescence is a tractable method with electron beam energies of 100 keV. With lower electron energies, electron scattering increases with significant beam divergence which makes quantitative imaging difficult. The potential application of the analytical and numerical models developed in this work is in the design of a flow field imaging instrument for use in hypersonic wind tunnels or onboard a flight research vehicle.

  3. Design method for automotive high-beam LED optics

    NASA Astrophysics Data System (ADS)

    Byzov, Egor V.; Moiseev, Mikhail A.; Doskolovich, Leonid L.; Kazanskiy, Nikolay L.

    2015-09-01

    New analytical method for the calculation of the LED secondary optics for automotive high-beam lamps is presented. Automotive headlamps should illuminate the road and the curb at the distance of 100-150 meters and create a bright, flat, relatively powerful light beam. To generate intensity distribution of this kind we propose to use TIR optical element (collimator working on the total internal reflection principle) with array of microlenses (optical corrector) on the upper surface. TIR part of the optical element enables reflection of the side rays to the front direction and provides a collimated beam which incidents on the microrelief. Microrelief, in its turn, dissipates the light flux in horizontal direction to meet the requirements of the Regulations 112, 113 and to provide well-illuminated area across the road in the far field. As an example, we computed and simulated the optical element with the diameter of 33 millimeters and the height of 22 millimeters. Simulation data shows that three illuminating modules including Cree XP-G2 LED and lens allow generating an appropriate intensity distribution for the class D of UNECE Regulations.

  4. Investigation of radiosurgical beam profiles using Monte Carlo method

    SciTech Connect

    Perucha, Mara; Sa, Francisco; Leal, Antonio; Rinco, Magnolia; Arra, Rafael; Nun, Luis; Carrasco, Ester

    2003-03-31

    An accurate determination of the penumbra of radiosurgery profiles is critical to avoid complications in organs at risk adjacent to the tumor. Conventional detectors may not be accurate enough for small field sizes. The Monte Carlo (MC) method was used to study the behavior of radiosurgical beam profiles at the penumbral region; the BEAM code was also used in this work. Two collimators (2.2- and 0.3-cm diameter) were calculated and compared with empirical measurements obtained with the detectors normally used. The differences found between film dosimetry and MC revealed a systematic error in the reading procedure. In the process, a water phantom was simulated with a layer of the same composition as that of the film. MC calculations with film differed by a small amount from those obtained with the water phantom alone. In conclusion, MC may be used as a verification tool to support dosimetrical procedures with conventional detectors, especially in very small beams such as those used in radiosurgery. Furthermore, it has been proved that the film energy dependence is negligible for fields used in radiosurgery.

  5. Beam splitter and method for generating equal optical path length beams

    DOEpatents

    Qian, Shinan; Takacs, Peter

    2003-08-26

    The present invention is a beam splitter for splitting an incident beam into first and second beams so that the first and second beams have a fixed separation and are parallel upon exiting. The beam splitter includes a first prism, a second prism, and a film located between the prisms. The first prism is defined by a first thickness and a first perimeter which has a first major base. The second prism is defined by a second thickness and a second perimeter which has a second major base. The film is located between the first major base and the second major base for splitting the incident beam into the first and second beams. The first and second perimeters are right angle trapezoidal shaped. The beam splitter is configured for generating equal optical path length beams.

  6. Retrospective sputter depth profiling using 3D mass spectral imaging.

    PubMed

    Zheng, Leiliang; Wucher, Andreas; Winograd, Nicholas

    2011-02-01

    A molecular multilayer stack composed of alternating Langmuir-Blodgett films was analyzed by ToF-SIMS imaging in combination with intermediate sputter erosion using a focused C60(+) cluster ion beam. From the resulting dataset, depth profiles of any desired lateral portion of the analyzed field-of-view can be extracted in retrospect, allowing the influence of the gating area on the apparent depth resolution to be assessed. In a similar way, the observed degradation of depth resolution with increasing depth of the analyzed interface can be analyzed in order to determine the 'intrinsic' depth resolution of the method.

  7. Mixed composition materials suitable for vacuum web sputter coating

    NASA Technical Reports Server (NTRS)

    Banks, Bruce A.; Rutledge, Sharon K.; Dever, Joyce A.; Bruckner, Eric J.; Walters, Patricia; Hambourger, Paul D.

    1996-01-01

    Ion beam sputter deposition techniques were used to investigate simultaneous sputter etching of two component targets so as to produce mixed composition films. Although sputter deposition has been largely confined to metals and metal oxides, at least one polymeric material, poly-tetra-fluorethylene, has been demonstrated to produce sputtered fragments which repolymerize upon deposition to produce a highly cross-linked fluoropolymer resembling that of the parent target Fluoropolymer-filled silicon dioxide and fluoropolymer-filled aluminum oxide coatings have been deposited by means of ion beam sputter coat deposition resulting in films having material properties suitable for aerospace and commercial applications. The addition of fluoropolymer to silicon dioxide films was found to increase the hydrophobicity of the resulting mixed films; however, adding fluoropolymer to aluminum oxide films resulted in a reduction in hydrophobicity, thought to be caused by aluminum fluoride formation.

  8. An investigation of acoustic beam patterns for the sonar localization problem using a beam based method.

    PubMed

    Guarato, Francesco; Windmill, James; Gachagan, Anthony; Harvey, Gerald

    2013-06-01

    Target localization can be accomplished through an ultrasonic sonar system equipped with an emitter and two receivers. Time of flight of the sonar echoes allows the calculation of the distance of the target. The orientation can be estimated from knowledge of the beam pattern of the receivers and the ratio, in the frequency domain, between the emitted and the received signals after compensation for distance effects and air absorption. The localization method is described and, as its performance strongly depends on the beam pattern, the search of the most appropriate sonar receiver in order to ensure the highest accuracy of target orientation estimations is developed in this paper. The structure designs considered are inspired by the ear shapes of some bat species. Parameters like flare rate, truncation angle, and tragus are considered in the design of the receiver structures. Simulations of the localization method allow us to state which combination of those parameters could provide the best real world implementation. Simulation results show the estimates of target orientations are, in the worst case, 2° with SNR = 50 dB using the receiver structure chosen for a potential practical implementation of a sonar system.

  9. Device and method for electron beam heating of a high density plasma

    DOEpatents

    Thode, L.E.

    A device and method for relativistic electron beam heating of a high density plasma in a small localized region are described. A relativistic electron beam generator produces a high voltage electron beam which propagates along a vacuum drift tube and is modulated to initiate electron bunching within the beam. The beam is then directed through a low density gas chamber which provides isolation between the vacuum modulator and the relativistic electron beam target. The relativistic beam is then applied to a high density target plasma which typically comprises DT, DD, hydrogen boron or similar thermonuclear gas at a density of 10/sup 17/ to 10/sup 20/.

  10. Cu2O/ZnO Heterojunction Solar Cells Fabricated by Magnetron-Sputter Deposition Method Films Using Sintered Ceramics Targets

    NASA Astrophysics Data System (ADS)

    Noda, S.; Shima, H.; Akinaga, H.

    2013-04-01

    Cu2O/ZnO heterojucntion solar cells were successfully obtained by a magnetron-sputter deposition method. The Cu2O thin film was deposited by the method using a sintered Cu2O ceramics target. Crystalline phases of the films were controlled by adjusting an O2 flow rate ratio (O2/(Ar+O2)) precisely during the sputtering process and Cu2O single phase polycrystalline films were obtained at room temperature. The Cu2O films qualities were improved by a rapid thermal annealing for 30 s in an Ar atmosphere of 1 atm. Hall mobility, carrier density, and resistivity of annealed films reached the values of 16.6 cm2/V/s, 3.5×1015 cm-3, and 107 Ωcm at 600 °C, respectively. The conversion efficiency of the Cu2O/ZnO heterojucntion solar cell was 0.24 % with the open circuit voltage of 0.69 V.

  11. Sputter deposition for multi-component thin films

    DOEpatents

    Krauss, Alan R.; Auciello, Orlando

    1990-01-01

    Ion beam sputter-induced deposition using a single ion beam and a multicomponent target is capable of reproducibly producing thin films of arbitrary composition, including those which are close to stoichiometry. Using a quartz crystal deposition monitor and a computer controlled, well-focused ion beam, this sputter-deposition approach is capable of producing metal oxide superconductors and semiconductors of the superlattice type such as GaAs-AlGaAs as well as layered metal/oxide/semiconductor/superconductor structures. By programming the dwell time for each target according to the known sputtering yield and desired layer thickness for each material, it is possible to deposit composite films from a well-controlled sub-monolayer up to thicknesses determined only by the available deposition time. In one embodiment, an ion beam is sequentially directed via a set of X-Y electrostatic deflection plates onto three or more different element or compound targets which are constituents of the desired film. In another embodiment, the ion beam is directed through an aperture in the deposition plate and is displaced under computer control to provide a high degree of control over the deposited layer. In yet another embodiment, a single fixed ion beam is directed onto a plurality of sputter targets in a sequential manner where the targets are each moved in alignment with the beam under computer control in forming a multilayer thin film. This controlled sputter-deposition approach may also be used with laser and electron beams.

  12. Sputter deposition for multi-component thin films

    DOEpatents

    Krauss, A.R.; Auciello, O.

    1990-05-08

    Ion beam sputter-induced deposition using a single ion beam and a multicomponent target is capable of reproducibly producing thin films of arbitrary composition, including those which are close to stoichiometry. Using a quartz crystal deposition monitor and a computer controlled, well-focused ion beam, this sputter-deposition approach is capable of producing metal oxide superconductors and semiconductors of the superlattice type such as GaAs-AlGaAs as well as layered metal/oxide/semiconductor/superconductor structures. By programming the dwell time for each target according to the known sputtering yield and desired layer thickness for each material, it is possible to deposit composite films from a well-controlled sub-monolayer up to thicknesses determined only by the available deposition time. In one embodiment, an ion beam is sequentially directed via a set of X-Y electrostatic deflection plates onto three or more different element or compound targets which are constituents of the desired film. In another embodiment, the ion beam is directed through an aperture in the deposition plate and is displaced under computer control to provide a high degree of control over the deposited layer. In yet another embodiment, a single fixed ion beam is directed onto a plurality of sputter targets in a sequential manner where the targets are each moved in alignment with the beam under computer control in forming a multilayer thin film. This controlled sputter-deposition approach may also be used with laser and electron beams. 10 figs.

  13. Method and apparatus for timing of laser beams in a multiple laser beam fusion system

    DOEpatents

    Eastman, Jay M.; Miller, Theodore L.

    1981-01-01

    The optical path lengths of a plurality of comparison laser beams directed to impinge upon a common target from different directions are compared to that of a master laser beam by using an optical heterodyne interferometric detection technique. The technique consists of frequency shifting the master laser beam and combining the master beam with a first one of the comparison laser beams to produce a time-varying heterodyne interference pattern which is detected by a photo-detector to produce an AC electrical signal indicative of the difference in the optical path lengths of the two beams which were combined. The optical path length of this first comparison laser beam is adjusted to compensate for the detected difference in the optical path lengths of the two beams. The optical path lengths of all of the comparison laser beams are made equal to the optical path length of the master laser beam by repeating the optical path length adjustment process for each of the comparison laser beams. In this manner, the comparison laser beams are synchronized or timed to arrive at the target within .+-.1.times.10.sup.-12 second of each other.

  14. Comparison of the Sputter Rates of Oxide Films Relative to the Sputter Rate of SiO2

    SciTech Connect

    Baer, Donald R.; Engelhard, Mark H.; Lea, Alan S.; Nachimuthu, Ponnusamy; Droubay, Timothy C.; Kim, J.; Lee, B.; Mathews, C.; Opila, R. L.; Saraf, Laxmikant V.; Stickle, William F.; Wallace, Robert; Wright, B. S.

    2010-09-02

    Because of the increasing technological importance of oxide films for a variety of applications, there is a growing interest in knowing the sputter rates for a wide variety of oxides. To support needs of users of the Environmental Molecular Sciences Laboratory (EMSL) User facility as well as our research programs, we have made a series of measurements of the sputter rates for oxide films that have been grown by oxygen plasma assisted molecular beam epitaxy (OPA-MBE), pulsed laser deposition (PLD), Atomic Layer Deposition (ALD), electrochemical oxidation, or sputter deposition. The sputter rates for these oxide films were determined in comparison to the sputter rates for thermally grown SiO2, a common sputter rate reference material. The film thicknesses and densities of these films were usually measured using x-ray reflectivity (XRR). These samples were mounted in an x-ray photoelectron spectroscopy (XPS) system or an Auger electron spectrometer for sputtering measurements using argon ion sputtering. Although the primary objective was to determine relative sputter rates at a fixed angle, the measurements were also used to determine: i) the angle dependence of the relative sputter rates; ii) the energy dependence of the relative sputter rates; and iii) the extent of ion beam reduction for the various oxides. Materials examined include: SiO2 (reference films), Al2O3, CeO2, Cr2O3, Fe2O3, HfO2, ITO (In-Sn-oxide) Ta2O5, TiO2 (anatase and rutile) and ZnO. We find that the sputter rates for the oxides can vary up to a factor of two (usually slower) from that observed for SiO2. The ratios of sputter rates to SiO2 appear to be relatively independent of ion beam energy for the range of 1kV to 4 kV and for incident angles of less than 50º. As expected, the ion beam reduction of the oxides varies with the sputter angle. These studies demonstrate that we can usually obtain sputter rate reproducibility better than 5% for similar oxide films.

  15. Active Beam Shaping System and Method Using Sequential Deformable Mirrors

    NASA Technical Reports Server (NTRS)

    Norman, Colin A. (Inventor); Pueyo, Laurent A. (Inventor)

    2015-01-01

    An active optical beam shaping system includes a first deformable mirror arranged to at least partially intercept an entrance beam of light and to provide a first reflected beam of light, a second deformable mirror arranged to at least partially intercept the first reflected beam of light from the first deformable mirror and to provide a second reflected beam of light, and a signal processing and control system configured to communicate with the first and second deformable mirrors. The first deformable mirror, the second deformable mirror and the signal processing and control system together provide a large amplitude light modulation range to provide an actively shaped optical beam.

  16. Design method for four-reflector type beam waveguide systems

    NASA Technical Reports Server (NTRS)

    Betsudan, S.; Katagi, T.; Urasaki, S.

    1986-01-01

    Discussed is a method for the design of four reflector type beam waveguide feed systems, comprised of a conical horn and 4 focused reflectors, which are used widely as the primary reflector systems for communications satellite Earth station antennas. The design parameters for these systems are clarified, the relations between each parameter are brought out based on the beam mode development, and the independent design parameters are specified. The characteristics of these systems, namely spillover loss, crosspolarization components, and frequency characteristics, and their relation to the design parameters, are also shown. It is also indicated that design parameters which decide the dimensions of the conical horn or the shape of the focused reflectors can be unerringly established once the design standard for the system has been selected as either: (1) minimizing the crosspolarization component by keeping the spillover loss to within acceptable limits, or (2) minimizing the spillover loss by maintaining the crossover components below an acceptable level and the independent design parameters, such as the respective sizes of the focused reflectors and the distances between the focussed reflectors, etc., have been established according to mechanical restrictions. A sample design is also shown. In addition to being able to clarify the effects of each of the design parameters on the system and improving insight into these systems, the efficiency of these systems will also be increased with this design method.

  17. Method and apparatus for efficient photodetachment and purification of negative ion beams

    DOEpatents

    Beene, James R [Oak Ridge, TN; Liu, Yuan [Knoxville, TN; Havener, Charles C [Knoxville, TN

    2008-02-26

    Methods and apparatus are described for efficient photodetachment and purification of negative ion beams. A method of purifying an ion beam includes: inputting the ion beam into a gas-filled multipole ion guide, the ion beam including a plurality of ions; increasing a laser-ion interaction time by collisional cooling the plurality of ions using the gas-filled multipole ion guide, the plurality of ions including at least one contaminant; and suppressing the at least one contaminant by selectively removing the at least one contaminant from the ion beam by electron photodetaching at least a portion of the at least one contaminant using a laser beam.

  18. Method and apparatus for efficient photodetachment and purification of negative ion beams

    DOEpatents

    Beene, James R [Oak Ridge, TN; Liu, Yuan [Knoxville, TN; Havener, Charles C [Knoxville, TN

    2008-02-26

    Methods and apparatus are described for efficient photodetachment and purification of negative ion beams. A method of purifying an ion beam includes: inputting the ion beam into a gas-filled multipole ion guide, the ion beam including a plurality of ions; increasing a laser-ion interaction time by collisional cooling the plurality of ions using the gas-filled multipole ion guide, the plurality of ions including at least one contaminant; and suppressing the at least one contaminant by selectively removing the at least one contaminant from the ion beam by electron photodetaching at least a portion of the at least one contaminant using a laser beam.

  19. Investigation of the biaxial stress of Al-doped ZnO thin films on a flexible substrate with RF magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Huang, Kuo-Ting; Chen, Hsi-Chao; Cheng, Po-Wei; Chang, Jhe-Ming

    2016-01-01

    Transparent conductive Al-doped ZnO (AZO) thin films were deposited onto poly(ethylene terephthalate) (PET) substrate, using the radio frequency (RF) magnetron sputtering method. The residual stress of flexible electronics was investigated by a double beam shadow moiré interferometer with phase shifting interferometry (PSI). Moreover, the biaxial stress of AZO thin films can be graphically represented by using Mohr’s circle of stress. The residual stress of AZO thin films becomes more compressive with the increase in sputtering power. The maximum residual stress is -1115.74 MPa, and the shearing stress is 490.57 MPa at a sputtering power of 200 W. The trends of residual stress were evidenced by the X-ray diffraction (XRD) patterns and optical properties of AZO thin films. According to the evaluation results of the refractive index and the extinction coefficient, the AZO thin films have better quality when the sputtering power less than 100 W.

  20. Simple effective tests for beam propagation method programs

    NASA Astrophysics Data System (ADS)

    Dumitrescu, Mihail M.; Iancu, Ovidiu D.; Karam, Jean Michel

    2000-02-01

    In view of the increased need of an effective, practical and unified test set to evalute the modeling capabilities of beam propagation method (BPM) based programs, we prose an incident set of tests to be used for a standard evaluation. The proposed test have been chosen to be simple, easy to implement and enable a fairly good evaluation without the need of any experiment. Interesting aspects of the tests' results and some straightforward, practical criteria to estimate program capabilities and to tune the simulation parameters are presented. A cross-checking between 'Mode Solver' based and BPM based programs is also put into discussion. A paraxial error evaluation method is presented and the transverse mesh influence on the paraxial error is analyzed.

  1. Composite method for precise freeform optical beam shaping.

    PubMed

    Feng, Zexin; Froese, Brittany D; Liang, Rongguang

    2015-11-01

    We present a composite freeform surface construction method for creating a high-accuracy irradiance distribution from a given incident beam under the influence of diffraction. The main idea is that we first determine a fully continuous freeform surface estimate by solving a standard Monge-Ampère equation and then refine it using an iterative Fourier-transform algorithm associated with over-compensation. Although this method can only be implemented in the paraxial approximation, it can significantly simplify the design and is applicable to many examples that fulfill this restriction. The resulting optical surface, unwrapped from the final phase, is an unusual discontinuous freeform surface that can produce very promising performances in terms of surface roughness and irradiance accuracy.

  2. A new method for beam stacking in storage rings

    SciTech Connect

    Bhat, C.M.; /Fermilab

    2008-06-01

    Recently, I developed a new beam stacking scheme for synchrotron storage rings called 'longitudinal phase-space coating' (LPSC). This scheme has been convincingly validated by multi-particle beam dynamics simulations and has been demonstrated with beam experiments at the Fermilab Recycler. Here, I present the results from both simulations and experiments. The beam stacking scheme presented here is the first of its kind.

  3. Study of bonding methods of aluminum beam leaded devices on microcircuit ceramic substrates

    NASA Technical Reports Server (NTRS)

    1973-01-01

    The use of aluminum beam lead devices in hybrid circuits is described by modification of existing processing equipment. Principles, procedures, and methods of application of Al beam lead devices are discussed in terms of processing the devices onto hybrids.

  4. Synthesis and characterization of pure anatase phase nanocrystalline TiO2 thin film by magnetron sputtering method

    NASA Astrophysics Data System (ADS)

    Pawar, Nimisha; Bhargava, Ankita; Dayal, Saurabh; Kumar, C. Sasi

    2016-05-01

    In present work, our focus is to deposit anatase phase nanocrystalline TiO2 thin films. In order to prepare Titanium oxide films we first deposited Titanium thin films using DC magnetron sputtering and then the substrates were annealed in a muffle furnace at different temperatures. Further the samples were characterized for analysis of phase, morphology and optical properties using XRD, SEM, AFM and photoluminescence spectroscopy respectively. XRD shows the formation of tetragonal phase TiO2 with lattice parameters values a= 3.8 Å and c=9.6 Å. The surface roughness value of the films were found to vary from 1.6 nm to 15.9 nm. The grain size as estimated from AFM varies from 48 nm to 125 nm at different temperatures. Thus, the results revealed the formation of ultra-smooth anatase phase pure nanocrystalline TiO2 spherical particles.

  5. Characterization of nanostructured VO2 thin films grown by magnetron controlled sputtering deposition and post annealing method.

    PubMed

    Chen, Sihai; Lai, Jianjun; Dai, Jun; Ma, Hong; Wang, Hongchen; Yi, Xinjian

    2009-12-21

    By magnetron controlled sputtering system, a new nanostructured metastable monoclinic phase VO2 (B) thin film has been fabricated. The testing result shows that this nanostructured VO2 (B) thin film has high temperature coefficient of resistance (TCR) of -7%/K. Scanning electron microscopy measurement shows that the average grain diameter of the VO2 (B) crystallite is between 100 and 250 nm. After post annealed, VO2 (B) crystallite is changed into monoclinic (M) phase VO2 (M) crystallite with the average grain diameter between 20 and 50 nm. A set up of testing the thin film switching time is established. The test result shows the switching time is about 50 ms. With the nanostructured VO2 (B) and VO2 (M) thin films, optical switches and high sensitivity detectors will be presented.

  6. Cone-beam artifact evaluation of the factorization method

    SciTech Connect

    Dennerlein, Frank; Noo, Frederic

    2011-05-15

    Purpose: The authors investigate the CB artifact behavior of the factorization approach recently suggested for image reconstruction in circular cone-beam computed tomography. This investigation is carried out in a typical C-arm geometry and involves simulated data and for the first time also phantom and clinical CB data acquired with a commercially available angiographic system. Methods: The CB artifact level is first measured using quantitative figures-of-merit that are computed from the reconstructions of the mathematical FORBILD head phantom and of a modified disk phantom. The authors then show reconstructions from a physical thorax phantom and clinical head data sets for a visual assessment of image quality. The performance of the factorization method is primarily compared to that of short-scan FDK, but the authors also show the results obtained with the full-scan FDK and the virtual PI-line BPF method for the simulation studies, as a benchmark. Results: Quantitatively, the FORBILD head phantom reconstructions of both FDK methods show a spatially averaged bias of up to 1.2% in the axial slices about 9 cm away from the plane of the scan, which is placed 4 cm below the central slice through the phantom. The artifact level for the short-scan FDK method and the virtual PI-line BPF method noticeably depends on the scan orientation. The factorization approach can significantly reduce both, this dependency as well as the reconstruction bias. It also shows visually an improved quality of the clinical images compared to short-scan FDK, particularly close to the spine and in the subcranial regions of the clinical data sets. Conclusions: The factorization approach comes with noticeably lower reconstruction bias than the FDK methods and is least sensitive to the scan orientation among all considered short-scan methods. The data inconsistencies contained in the real data sets, such as scatter, beam hardening, or data truncation, show only little impact on the factorization

  7. Method for changing the cross section of a laser beam

    DOEpatents

    Sweatt, William C.; Seppala, Lynn

    1995-01-01

    A technique is disclosed herein in which a circular optical beam, for example a copper vapor laser (CVL) beam, is converted to a beam having a profile other than circular, e.g. square or triangular. This is accomplished by utilizing a single optical mirror having a reflecting surface designed in accordance with a specifically derived formula in order to make the necessary transformation, without any substantial light loss and without changing substantially the intensity profile of the circular beam which has a substantially uniform intensity profile. In this way, the output beam can be readily directed into the dye cell of a dye laser.

  8. Method for changing the cross section of a laser beam

    DOEpatents

    Sweatt, W.C.; Seppala, L.

    1995-12-05

    A technique is disclosed herein in which a circular optical beam, for example a copper vapor laser (CVL) beam, is converted to a beam having a profile other than circular, e.g. square or triangular. This is accomplished by utilizing a single optical mirror having a reflecting surface designed in accordance with a specifically derived formula in order to make the necessary transformation, without any substantial light loss and without changing substantially the intensity profile of the circular beam which has a substantially uniform intensity profile. In this way, the output beam can be readily directed into the dye cell of a dye laser. 4 figs.

  9. Method for changing the cross section of a laser beam

    SciTech Connect

    Sweatt, W.C.; Seppala, L.

    1995-12-05

    A technique is disclosed herein in which a circular optical beam, for example a copper vapor laser (CVL) beam, is converted to a beam having a profile other than circular, e.g. square or triangular. This is accomplished by utilizing a single optical mirror having a reflecting surface designed in accordance with a specifically derived formula in order to make the necessary transformation, without any substantial light loss and without changing substantially the intensity profile of the circular beam which has a substantially uniform intensity profile. In this way, the output beam can be readily directed into the dye cell of a dye laser. 4 figs.

  10. Supporting soil remediation at Fernald by electron beam methods

    SciTech Connect

    Buck, E.C.; Brown, N.R.; Dietz, N.L.; Cunnane, J.C.

    1994-02-01

    Electron beam techniques have been used to characterize uranium-contaminated soils at the Fernald Site, Ohio. The major uranium phases have been identified by analytical electron microscopy (AEM) as uranyl phosphate (autunite), uranium oxide (uraninite), and uranium phosphite [U(PO{sub 3}){sub 4}]. Luminescence and X-ray absorption spectroscopy incorrectly identified uranium oxide hydrate (schoepite) as the major phase in Fernald soils. The solubilities of schoepite and autunite are very different, so a solubility-dependent remediation method selected for schoepite will not be effective for removing autunite. AEM is the only technique capable of precisely identifying unknown submicron phases. The uranium phosphite has been found predominantly at the incinerator site at Fernald. This phase has not been removed successfully by any of the chemical remediation technologies. We suggest that an alternative physical extraction procedure be applied to remove this phase.

  11. METHOD OF PRODUCING AND ACCELERATING AN ION BEAM

    NASA Technical Reports Server (NTRS)

    Foster, John E. (Inventor)

    2005-01-01

    A method of producing and accelerating an ion beam comprising the steps of providing a magnetic field with a cusp that opens in an outward direction along a centerline that passes through a vertex of the cusp: providing an ionizing gas that sprays outward through at least one capillary-like orifice in a plenum that is positioned such that the orifice is on the centerline in the cusp, outward of the vortex of the cusp; providing a cathode electron source, and positioning it outward of the orifice and off of the centerline; and positively charging the plenum relative to the cathode electron source such that the plenum functions as m anode. A hot filament may be used as the cathode electron source, and permanent magnets may be used to provide the magnetic field.

  12. Moving receive beam method and apparatus for synthetic aperture radar

    DOEpatents

    Kare, Jordin T.

    2001-01-01

    A method and apparatus for improving the performance of Synthetic Aperture Radar (SAR) systems by reducing the effect of "edge losses" associated with nonuniform receiver antenna gain. By moving the receiver antenna pattern in synchrony with the apparent motion of the transmitted pulse along the ground, the maximum available receiver antenna gain can be used at all times. Also, the receiver antenna gain for range-ambiguous return signals may be reduced, in some cases, by a large factor. The beam motion can be implemented by real-time adjustment of phase shifters in an electronically-steered phased-array antenna or by electronic switching of feed horns in a reflector antenna system.

  13. Annealing of gold nanostructures sputtered on glass substrate

    NASA Astrophysics Data System (ADS)

    Švorčík, V.; Siegel, J.; Šutta, P.; Mistrík, J.; Janíček, P.; Worsch, P.; Kolská, Z.

    2011-03-01

    The effects of annealing at 300 °C on gold nanostructures sputtered onto glass substrate were studied using XRD, SAXSees, the Van der Pauw method and ellipsometry. As-sputtered and annealed samples exhibit a different dependence of the gold lattice parameter on the sputtering time. With increasing sputtering time the average thickness of the layer and the size of gold crystallites increased. Another rapid enlargement of the crystallites is observed after annealing. The volume resistivity decreases rapidly with the increasing sputtering time for both, as-deposited and annealed structures. With increasing sputtering time initially discontinuous gold coverage changes gradually in a continuous one. Electrically continuous gold coverage on the as-sputtered and annealed samples exhibits the same concentration of free charge carriers and Hall mobility. Optical constants of as-deposited and annealed gold films determined by ellipsometry support resistivity measurements and clearly manifest the presence of plasmons in discontinuous films.

  14. Means and method for the focusing and acceleration of parallel beams of charged particles

    DOEpatents

    Maschke, Alfred W.

    1983-07-05

    A novel apparatus and method for focussing beams of charged particles comprising planar arrays of electrostatic quadrupoles. The quadrupole arrays may comprise electrodes which are shared by two or more quadrupoles. Such quadrupole arrays are particularly adapted to providing strong focussing forces for high current, high brightness, beams of charged particles, said beams further comprising a plurality of parallel beams, or beamlets, each such beamlet being focussed by one quadrupole of the array. Such arrays may be incorporated in various devices wherein beams of charged particles are accelerated or transported, such as linear accelerators, klystron tubes, beam transport lines, etc.

  15. Method and apparatus for reducing coherence of high-power laser beams

    DOEpatents

    Moncur, Norman K.; Mayer, Frederick J.

    1978-01-01

    Method and apparatus for reducing the coherence and for smoothing the power density profile of a collimated high-power laser beam in which the beam is focused at a point on the surface of a target fabricated of material having a low atomic number. The initial portion of the focused beam heats the material to form a hot reflective plasma at the material surface. The remaining, major portion of the focused beam is reflected by the plasma and recollected to form a collimated beam having reduced beam coherence.

  16. New method in medical tomography based on vibrating wire: bench-test experiment on laser beam

    NASA Astrophysics Data System (ADS)

    Aginian, M. A.; Alonso, J.; Arutunian, S. G.; Chung, M.; Margaryan, A. V.; Lazareva, E. G.; Lazarev, L. M.; Shahinyan, L. A.

    2017-04-01

    A new method for fast transverse beam profiling, where a vibrating wire is served as a resonant target, has been developed. The speed of scan up to a few hundred mm/s provides opportunity to make a set of beam profiles at different directions of the scan within a reasonable measurement time. This profile set allows us to reconstruct 2D beam profile by filtered back-projection algorithm. The new method may be applied for proton, X-ray, gamma, and neutron beams, and can also be of interest in tomography including medical applications. The method has been tested experimentally by means of laser beams.

  17. Ionized magnetron sputtering of aluminum(,2)oxygen(,3)

    NASA Astrophysics Data System (ADS)

    Gonzalez, Patrick Fernando

    2000-10-01

    This dissertation shows a detailed study of the conditions necessary for sputtering alumina using a novel variant of ionized magnetron sputtering (IMS) first demonstrated by Yamashita et. al. The study presented herein leverages concurrent research at our laboratory on high density plasmas, plasma characterization and charged particle beams research to demonstrate a new source capable of sputtering hydrated alumina films at high rates. High quality ceramics such as Al2O3 find uses in a variety of applications, and in particular, for mass storage applications. Consequently, there exists an ever-growing need to provide and improve the capability of growing thick insulating films. Ideally, the insulating film should be stoichiometric and able to be grown at rates high enough to be easily manufacturable. Alumina is a particularly attractive due to its high density, Na barrier properties, and stability and radiation resistance. However, high quality films are often difficult to achieve with conventional RF plasma due to extremely slow deposition rates and difficulties associated with system cooling. The preferred method is to reactively sputter Al from a solid target in an O2 ambient. Nevertheless, this process is inherently unstable and leads to arcing and uneven target wear when magnetrons are used. In this study, we build the sputtering source, evaluate, and maximize the deposition characteristics of alumina films sputtered from a solid target in an Ar/O2 ambient. Semi-crystalline (kappa + theta) alumina has been reported using a similar technique at temperatures as low 370 C. The difference in the system used herein is that RF power is used for both, the inductive and capacitive components. Additionally, we use a solid target made of sintered alumina throughout the experiment. A model is developed using regression analysis and compared to results obtained. Because plasma parameters can interact with each other, we explore ICP/CCP power interactions and gas influence

  18. Hollow target magnetron-sputter-type solid material ion source.

    PubMed

    Sasaki, D; Ieki, S; Kasuya, T; Wada, M

    2012-02-01

    A thin-walled aluminum (Al) hollow electrode has been inserted into an ion source to serve as an electrode for a radio frequency magnetron discharge. The produced plasma stabilized by argon (Ar) gas sputters the Al electrode to form a beam of Al(+) and Ar(+) ions. The total beam current extracted through a 3 mm diameter extraction hole has been 50 μA, with the Al(+) ion beam occupying 30% of the total beam current.

  19. Study on methods for measuring laser energy of large-aperture beam

    NASA Astrophysics Data System (ADS)

    Zhang, Hao; Gao, Haoran; Jia, Jing; Hu, Shaoyun; Fan, Hongying

    2014-12-01

    A experimental method measuring laser energy and energy distributing of large-aperture beam is presented. The experimental equipment is established. The energy and energy distribution of beam, the beam size is Φ100mm and Φ360mm, are measured. The result show measuring error for laser energy is less than 8%. The energy distribution is basically consistent.

  20. A novel method to survey parameters of an ion beam and its interaction with a target

    NASA Astrophysics Data System (ADS)

    Long, J. D.; Yang, Z.; Li, J.; Wang, X. H.; Wang, T.; Lan, C. H.; Dong, P.; Li, X.; He, J. L.; Zheng, L.; Liu, P.

    2017-09-01

    Beam profile and composition of the pulsed ion beam from a vacuum arc source are valuable information for designing a high-intensity deuterium-tritium neutron generator. Traditional methods are notoriously difficult to obtain the information at the same time. A novel off-line diagnostic method is presented, which can obtain the transverse beam profile with high resolution as well as species of the ions in the beam. The method is using a silicon target with high purity to interact with the ion beam, and then use secondary ion mass spectrometry (SIMS) to analyze the interaction zone of the target to get the beam information. More information on beam-target interaction could get simultaneously. Proof-of-principle simulation and experimental works have demonstrated this method is practical.

  1. Photoluminescence and compositional-structural properties of ion-beam sputter deposited Er-doped TiO2-xNx films: Their potential as a temperature sensor

    NASA Astrophysics Data System (ADS)

    Scoca, D.; Morales, M.; Merlo, R.; Alvarez, F.; Zanatta, A. R.

    2015-05-01

    Er-doped TiO2-xNx films were grown by Ar+ ion-beam sputtering a Ti + Er target under different N2 + O2 high-purity atmospheres. The compositional-structural properties of the samples were investigated after thermal annealing the films up to 1000 °C under a flow of oxygen. Sample characterization included x-ray photoelectron spectroscopy, grazing incidence x-ray diffraction, Raman scattering, and photoluminescence experiments. According to the experimental data, both composition and atomic structure of the samples were very sensitive to the growth conditions and annealing temperature. In the as-deposited form, the N-rich TiO2-xNx films presented TiN crystallites and no photoluminescence. As the thermal treatments proceed, the films were transformed into TiO2 and Er3+-related light emission were observed in the visible and near-infrared ranges at room-temperature. Whereas the development of TiO2 occurred due to the insertion-diffusion of oxygen in the films, light emission originated because of optical bandgap widening and/or structural-chemical variations in the vicinity of the Er3+ ions. Finally, the photoluminescence results in the visible range suggested the potential of the present samples in producing an optically based temperature sensor in the ˜150-500 K range.

  2. Enhancement of exchange bias and training effect in ion-beam sputtered Fe{sub 46}Mn{sub 54}/Ni{sub 81}Fe{sub 19} bilayers

    SciTech Connect

    Fulara, Himanshu; Chaudhary, Sujeet Kashyap, Subhash C.; Granville, Simon

    2014-01-28

    We present a remarkable enhancement by 300% of the exchange-bias field at room temperature, without affecting the coercivity value, via optimum magnetic annealing (250 °C/3 kOe) in ion-beam sputtered FeMn(30 nm)/NiFe(10 nm) bilayers. This specific behavior has been attributed to a higher degree of γ-FeMn(111) orientation that offers more interfacial FeMn moments to get pinned with the moments of the adjacent NiFe layer. Unlike the absence of training effect at room temperature, a pronounced training effect and an accompanying magnetization reversal asymmetry are evidenced upon field cooling below 50 K due to the presence of biaxial exchange induced anisotropy across the interdiffused FeMn/NiFe interface. The present findings not only have technological significance but also are of relevance to the understanding of interfacial spin disorder and frustration in these exchange-biased systems.

  3. Effect of the working gas of the ion-assisted source on the optical and mechanical properties of SiO2 films deposited by dual ion beam sputtering with Si and SiO2 as the starting materials.

    PubMed

    Wu, Jean-Yee; Lee, Cheng-Chung

    2006-05-20

    Silicon and fused-silica targets are used as the starting materials for depositing silicon oxide (SiO2) films. The SiO2 films are prepared by a dual ion beam sputtering deposition system with a main ion source and an ion-assisted source with different working gases. The films deposited are then examined and compared by using a visible spectrophotometer, a Fourier-transform IR spectrophotometer, an atomic force microscope, and contact angle instruments. A Twyman-Green interferometer is employed to study the film stress by phase-shift interferometry. All the SiO2 films show excellent optical properties with extra-low extinction coefficients (below 2x10(-5)) and have no water absorption. When the working gas is O2 for the ion-assisted source, the deposited SiO2 films show good properties in terms of stress and roughness and with a good molecular bonding structure order for both targets. However, SiO2 films deposited from the fused-silica target had a larger contact angle, while those deposited from the silicon target had 2.5 times the deposition rate.

  4. Effect of Substrate Temperature on Ti/TiO2 Layers Growth Using a Combined Sputtering/Sol-Gel Combustion Method.

    PubMed

    Kim, Sang-Gon; Sung, Youl-Moon; Shin, Hoon-Kyu

    2015-02-01

    A combined radio frequency sputtering/sol-gel combustion method was investigated in order to obtain optimum process condition for fabrication of a Titanium (Ti)/Titanium oxide (TiO2) films electrode of transparent conductive oxide-less dye-sensitized solar cells (TCO-less DSCs), Experimentally, the substrate temperature was changed from R.T. to 500 °C, and it was found that there existed an optimum value for efficient performance of the cell. The porous Ti layer with low sheet resistance (-2.5 Ω/sq.) can be prepared by substrate temperature 250 °C under RF power 300 W and Ar 8 mTorr. The efficiency (η) of the cell was 6.52% [FF: 0.76, VOC: 0.72 V, JSC: 11.91 mA/cm2].

  5. Apparatus and method for improving radiation coherence and reducing beam emittance

    DOEpatents

    Csonka, Paul L.

    1992-01-01

    A method and apparatus for increasing the coherence and reducing the emittance of a beam-shaped pulse operates by splitting the pulse into multiple sub-beams, delaying the propagation of the various sub-beams by varying amounts, and then recombining the sub-beams by means of a rotating optical element to form a pulse of longer duration with improved transverse coherence.

  6. Formation and optical properties of fluorescent gold nanoparticles obtained by matrix sputtering method with volatile mercaptan molecules in the vacuum chamber and consideration of their structures.

    PubMed

    Sumi, Taiki; Motono, Shingo; Ishida, Yohei; Shirahata, Naoto; Yonezawa, Tetsu

    2015-04-14

    This paper proposes a novel methodology to synthesize highly fluorescent gold nanoparticles (NPs) with a maximum quantum yield of 16%, in the near-infrared (IR) region. This work discusses the results of using our (previously developed) matrix sputtering method to introduce mercaptan molecules, α-thioglycerol, inside the vacuum sputtering chamber, during the synthesis of metal NPs. The evaporation of α-thioglycerol inside the chamber enables to coordinate to the "nucleation stage" very small gold nanoclusters in the gas phase, thus retaining their photophysical characteristics. As observed through transmission electron microscopy, the size of the Au NPs obtained with the addition of α-thioglycerol varied from approximately 2-3 nm to approximately 5 nm. Plasmon absorption varied with the size of the resultant nanoparticles. Thus, plasmon absorption was observed at 2.4 eV in the larger NPs. However, it was not observed, and instead a new peak was found at approximately 3.4 eV, in the smaller NPs that resulted from the introduction of α-thioglycerol. The Au NPs stabilized by the α-thioglycerol fluoresced at approximately 1.8 eV, and the maximum wavelength shifted toward the red, in accordance with the size of the NPs. A maximum fluorescent quantum yield of 16% was realized under the optimum conditions, and this value is extremely high compared to values previously reported on gold NPs and clusters (generally ∼1%). To our knowledge, however, Au NPs of size >2 nm usually do not show strong fluorescence. By comparison with results reported in previous literature, it was concluded that these highly fluorescent Au NPs consist of gold-mercaptan complexes. The novel method presented in this paper therefore opens a new door for the effective control of size, photophysical characteristics, and structure of metal NPs. It is hoped that this research contributes significantly to the science in this field.

  7. Simulation of nanoindentation experiment on RF magnetron sputtered nanocolumnar V2O5 film using finite element method

    NASA Astrophysics Data System (ADS)

    Porwal, Deeksha; Gupta, A. K.; Pillai, Anju M.; Sharma, Anand Kumar; Mukhopadhyay, Anoop Kumar; Khan, Kallol; Dey, Arjun

    2016-07-01

    The present work reports the nanomechanical behavior of a pulsed radio frequency (RF) magnetron sputtered vanadium pentoxide (V2O5) film deposited on silicon (Si) substrate using a combination of nanoindentation experiments and a finite element model (FEM). Deposited V2O5 film is characterized by x-ray diffraction (XRD), nanoprofilometry, field emission scanning electron microscopy (FESEM), nanoindentation and FEM. The phase pure 6.16 μm V2O5 film shows a nanocolumnar structure. The film exhibits nanohardness (H) of 0.16 ± 0.013 GPa and Young’s modulus (E) of about 12.05 ± 1.41 GPa. The FEM reproduces experimentally obtained load versus depth (P-h) plot and subsequently give yield stress and strain hardening component data of V2O5 film on Si substrate. Stress-strain behavior and von-Mises stress distribution of the V2O5 film with Si substrate system are also simulated. The FE model confirms the local maximum equivalent stress active underneath the nanoindenters to be nearly twice as high as the yield stress and thereby explains the plastic deformation observed in the V2O5 film.

  8. Low-damage high-throughput grazing-angle sputter deposition on graphene

    SciTech Connect

    Chen, C.-T.; Gajek, M.; Raoux, S.; Casu, E. A.

    2013-07-15

    Despite the prevalence of sputter deposition in the microelectronics industry, it has seen very limited applications for graphene electronics. In this letter, we report systematic investigation of the sputtering induced damages in graphene and identify the energetic sputtering gas neutrals as the primary cause of graphene disorder. We further demonstrate a grazing-incidence sputtering configuration that strongly suppresses fast neutral bombardment and retains graphene structure integrity, creating considerably lower damage than electron-beam evaporation. Such sputtering technique yields fully covered, smooth thin dielectric films, highlighting its potential for contact metals, gate oxides, and tunnel barriers fabrication in graphene device applications.

  9. Comparison of the sputter rates of oxide films relative to the sputter rate of SiO{sub 2}

    SciTech Connect

    Baer, D. R.; Engelhard, M. H.; Lea, A. S.; Nachimuthu, P.; Droubay, T. C.; Kim, J.; Lee, B.; Mathews, C.; Opila, R. L.; Saraf, L. V.; Stickle, W. F.; Wallace, R. M.; Wright, B. S.

    2010-09-15

    There is a growing interest in knowing the sputter rates for a wide variety of oxides because of their increasing technological importance in many different applications. To support the needs of users of the Environmental Molecular Sciences Laboratory, a national scientific user facility, as well as our research programs, the authors made a series of measurements of the sputter rates from oxide films that have been grown by oxygen plasma-assisted molecular beam epitaxy, pulsed laser deposition, atomic layer deposition, electrochemical oxidation, or sputter deposition. The sputter rates for these oxide films were determined in comparison with those from thermally grown SiO{sub 2}, a common reference material for sputter rate determination. The film thicknesses and densities for most of these oxide films were measured using x-ray reflectivity. These oxide films were mounted in an x-ray photoelectron or Auger electron spectrometer for sputter rate measurements using argon ion sputtering. Although the primary objective of this work was to determine relative sputter rates at a fixed angle, the measurements also examined (i) the angle dependence of the relative sputter rates, (ii) the energy dependence of the relative sputter rates, and (iii) the extent of ion beam induced reduction for some oxides. Oxide films examined include SiO{sub 2}, Al{sub 2}O{sub 3}, CeO{sub 2}, Cr{sub 2}O{sub 3}, Fe{sub 2}O{sub 3}, HfO{sub 2}, In-Sn oxide, Ta{sub 2}O{sub 5}, TiO{sub 2} (anatase, rutile, and amorphous), and ZnO. The authors found that the sputter rates for the oxides can vary up to a factor of 2 (usually lower) from that observed for SiO{sub 2}. The ratios of sputter rates relative to those of SiO{sub 2} appear to be relatively independent of ion beam energy in the range of 1-4 kV and for incident angles <50 deg. As expected, the extent of ion beam induced reduction of the oxides varies with the sputter angle.

  10. Simultaneous determination of electron beam profile and material response using self-consistent iterative method

    NASA Astrophysics Data System (ADS)

    Kandel, Yudhishthir; Denbeaux, Gregory

    2016-08-01

    We develop a novel iterative method to accurately measure electron beam shape (current density distribution) and monotonic material response as a function of position. A common method is to scan an electron beam across a knife edge along many angles to give an approximate measure of the beam profile, however such scans are not easy to obtain in all systems. The present work uses only an electron beam and multiple exposed regions of a thin film of photoresist to measure the complete beam profile for any beam shape, where the material response is characterized externally. This simplifies the setup of new experimental tools. We solve for self-consistent photoresist thickness loss response to dose and the electron beam profile simultaneously by optimizing a novel functional iteratively. We also show the successful implementation of the method in a real world data set corrupted by noise and other experimental variabilities.

  11. Experimental Method of Generating Electromagnetic Gaussian Schell-model Beams

    DTIC Science & Technology

    2015-03-26

    pain, having patience with me, and keeping me on track throughout my Master’s program and research process. Matthew J. Gridley v Table of Contents...ISOLATION OF SPECKLE FOR TARGET-IN-THE-LOOP COHERENT BEAM COMBINING. Thesis, Air Force Institute of Technology, 2014. [11] Korotkova, Olga. Random Light Beams

  12. White light interferometry for quantitative surface characterization in ion sputtering experiments.

    SciTech Connect

    Baryshev, S. V.; Zinovev, A. V.; Tripa, C. E.; Erck, R. A.; Veryovkin, I. V.

    2012-07-01

    White light interferometry (WLI) can be used to obtain surface morphology information on dimensional scale of millimeters with lateral resolution as good as {approx}1 {micro}m and depth resolution down to 1 nm. By performing true three-dimensional imaging of sample surfaces, the WLI technique enables accurate quantitative characterization of the geometry of surface features and compares favorably to scanning electron and atomic force microscopies by avoiding some of their drawbacks. In this paper, results of using the WLI imaging technique to characterize the products of ion sputtering experiments are reported. With a few figures, several example applications of the WLI method are illustrated when used for (i) sputtering yield measurements and time-to-depth conversion, (ii) optimizing ion beam current density profiles, the shapes of sputtered craters, and multiple ion beam superposition and (iii) quantitative characterization of surfaces processed with ions. In particular, for sputter depth profiling experiments of {sup 25}Mg, {sup 44}Ca and {sup 53}Cr ion implants in Si (implantation energy of 1 keV per nucleon), the depth calibration of the measured depth profile curves determined by the WLI method appeared to be self-consistent with TRIM simulations for such projectile-matrix systems. In addition, high depth resolution of the WLI method is demonstrated for a case of a Genesis solar wind Si collector surface processed by gas cluster ion beam: a 12.5 nm layer was removed from the processed surface, while the transition length between the processed and untreated areas was 150 {micro}m.

  13. Sputtering of uranium

    NASA Technical Reports Server (NTRS)

    Gregg, R.; Tombrello, T. A.

    1978-01-01

    Results are presented for an experimental study of the sputtering of U-235 atoms from foil targets by hydrogen, helium, and argon ions, which was performed by observing tracks produced in mica by fission fragments following thermal-neutron-induced fission. The technique used allowed measurements of uranium sputtering yields of less than 0.0001 atom/ion as well as yields involving the removal of less than 0.01 monolayer of the uranium target surface. The results reported include measurements of the sputtering yields for 40-120-keV protons, 40-120-keV He-4(+) ions, and 40- and 80-keV Ar-40(+) ions, the mass distribution of chunks emitted during sputtering by the protons and 80-keV Ar-40(+) ions, the total chunk yield during He-4(+) sputtering, and some limited data on molecular sputtering by H2(+) and H3(+). The angular distribution of the sputtered uranium is discussed, and the yields obtained are compared with the predictions of collision cascade theory.

  14. An (ultra) high-vacuum compatible sputter source for oxide thin film growth

    SciTech Connect

    Mayr, Lukas; Köpfle, Norbert; Auer, Andrea; Klötzer, Bernhard; Penner, Simon

    2013-09-15

    A miniaturised CF-38 mountable sputter source for oxide and metal thin film preparation with enhanced high-vacuum and ultra-high-vacuum compatibility is described. The all home-built sputtering deposition device allows a high flexibility also in oxidic sputter materials, suitable deposition rates for preparation of films in the nm- and the sub-monolayer regime and excellent reliability and enhanced cleanliness for usage in UHV chambers. For a number of technologically important – yet hardly volatile – materials, the described source represents a significant improvement over thermal deposition techniques like electron-beam- or thermal evaporation, as especially the latter are no adequate tool to prepare atomically clean layers of refractory oxide materials. Furthermore, it is superior to commercially available magnetron sputter devices, especially for applications, where highly reproducible sub-monolayer thin film preparation under very clean UHV conditions is required (e.g., for studying phase boundary effects in catalysis). The device in turn offers the usage of a wide selection of evaporation materials and special target preparation procedures also allow the usage of pressed oxide powder targets. To prove the performance of the sputter-source, test preparations with technologically relevant oxide components, comprising ZrO{sub 2} and yttrium-stabilized ZrO{sub 2}, have been carried out. A wide range of characterization methods (electron microscopy, X-ray photoelectron spectroscopy, low-energy ion scattering, atomic force microscopy, and catalytic testing) were applied to demonstrate the properties of the sputter-deposited thin film systems.

  15. In vitro Cyto and Blood Compatibility of Titanium Containing Diamond-Like Carbon Prepared by Hybrid Sputtering Method

    NASA Astrophysics Data System (ADS)

    Krishnasamy Navaneetha, Pandiyaraj; Jan, Heeg; Andreas, Lampka; Fabian, Junge; Torsten, Barfels; Marion, Wienecke; Young, Ha Rhee; Hyoung, Woo Kim

    2012-09-01

    In recent years, diamond-like carbon films (DLC) have been given more attention in research in the biomedical industry due to their potential application as surface coating on biomedical materials such as metals and polymer substrates. There are many ways to prepare metal containing DLC films deposited on polymeric film substrates, such as coatings from carbonaceous precursors and some means that incorporate other elements. In this study, we investigated both the surface and biocompatible properties of titanium containing DLC (Ti-DLC) films. The Ti-DLC films were prepared on the surface of poly (ethylene terephthalate) (PET) film as a function of the deposition power level using reactive sputtering technique. The films' hydrophilicity was studied by contact angle and surface energy tests. Their surface morphology was studied by scanning electron microscopy (SEM) and atomic force microscopy (AFM). Their elemental chemical composition was analyzed using energy dispersive X-spectra (EDX) and X-ray photoelectron spectroscopy (XPS). Their blood and cell compatibility was studied by in vitro tests, including tests on platelet adhesion, thrombus formation, whole blood clotting time and osteoblast cell compatibility. Significant changes in the morphological and chemical composition of the Ti-DLC films were observed and found to be a function of the deposition level. These morphological and chemical changes reduced the interfacial tension between Ti-DLC and blood proteins as well as resisted the adhesion and activation of platelets on the surface of the Ti-DLC films. The cell compatibility results exhibited significant growth of osteoblast cells on the surface of Ti incorporated DLC film compared with that of DLC film surface.

  16. Expanded beam deflection method for simultaneous measurement of displacement and vibrations of multiple microcantilevers

    SciTech Connect

    Nieradka, K.; MaloziePc, G.; Kopiec, D.; Gotszalk, T.

    2011-10-15

    Here we present an extension of optical beam deflection (OBD) method for measuring displacement and vibrations of an array of microcantilevers. Instead of focusing on the cantilever, the optical beam is either focused above or below the cantilever array, or focused only in the axis parallel to the cantilevers length, allowing a wide optical line to span multiple cantilevers in the array. Each cantilever reflects a part of the incident beam, which is then directed onto a photodiode array detector in a manner allowing distinguishing between individual beams. Each part of reflected beam behaves like a single beam of roughly the same divergence angle in the bending sensing axis as the incident beam. Since sensitivity of the OBD method depends on the divergence angle of deflected beam, high sensitivity is preserved in proposed expanded beam deflection (EBD) method. At the detector, each spot's position is measured at the same time, without time multiplexing of light sources. This provides real simultaneous readout of entire array, unavailable in most of competitive methods, and thus increases time resolution of the measurement. Expanded beam can also span another line of cantilevers allowing monitoring of specially designed two-dimensional arrays. In this paper, we present first results of application of EBD method to cantilever sensors. We show how thermal noise resolution can be easily achieved and combined with thermal noise based resonance frequency measurement.

  17. Expanded beam deflection method for simultaneous measurement of displacement and vibrations of multiple microcantilevers.

    PubMed

    Nieradka, K; Małozięć, G; Kopiec, D; Grabiec, P; Janus, P; Sierakowski, A; Gotszalk, T

    2011-10-01

    Here we present an extension of optical beam deflection (OBD) method for measuring displacement and vibrations of an array of microcantilevers. Instead of focusing on the cantilever, the optical beam is either focused above or below the cantilever array, or focused only in the axis parallel to the cantilevers length, allowing a wide optical line to span multiple cantilevers in the array. Each cantilever reflects a part of the incident beam, which is then directed onto a photodiode array detector in a manner allowing distinguishing between individual beams. Each part of reflected beam behaves like a single beam of roughly the same divergence angle in the bending sensing axis as the incident beam. Since sensitivity of the OBD method depends on the divergence angle of deflected beam, high sensitivity is preserved in proposed expanded beam deflection (EBD) method. At the detector, each spot's position is measured at the same time, without time multiplexing of light sources. This provides real simultaneous readout of entire array, unavailable in most of competitive methods, and thus increases time resolution of the measurement. Expanded beam can also span another line of cantilevers allowing monitoring of specially designed two-dimensional arrays. In this paper, we present first results of application of EBD method to cantilever sensors. We show how thermal noise resolution can be easily achieved and combined with thermal noise based resonance frequency measurement.

  18. Expanded beam deflection method for simultaneous measurement of displacement and vibrations of multiple microcantilevers

    NASA Astrophysics Data System (ADS)

    Nieradka, K.; Małozieć, G.; Kopiec, D.; Grabiec, P.; Janus, P.; Sierakowski, A.; Gotszalk, T.

    2011-10-01

    Here we present an extension of optical beam deflection (OBD) method for measuring displacement and vibrations of an array of microcantilevers. Instead of focusing on the cantilever, the optical beam is either focused above or below the cantilever array, or focused only in the axis parallel to the cantilevers length, allowing a wide optical line to span multiple cantilevers in the array. Each cantilever reflects a part of the incident beam, which is then directed onto a photodiode array detector in a manner allowing distinguishing between individual beams. Each part of reflected beam behaves like a single beam of roughly the same divergence angle in the bending sensing axis as the incident beam. Since sensitivity of the OBD method depends on the divergence angle of deflected beam, high sensitivity is preserved in proposed expanded beam deflection (EBD) method. At the detector, each spot's position is measured at the same time, without time multiplexing of light sources. This provides real simultaneous readout of entire array, unavailable in most of competitive methods, and thus increases time resolution of the measurement. Expanded beam can also span another line of cantilevers allowing monitoring of specially designed two-dimensional arrays. In this paper, we present first results of application of EBD method to cantilever sensors. We show how thermal noise resolution can be easily achieved and combined with thermal noise based resonance frequency measurement.

  19. Laser-driven deflection arrangements and methods involving charged particle beams

    DOEpatents

    Plettner, Tomas [San Ramon, CA; Byer, Robert L [Stanford, CA

    2011-08-09

    Systems, methods, devices and apparatus are implemented for producing controllable charged particle beams. In one implementation, an apparatus provides a deflection force to a charged particle beam. A source produces an electromagnetic wave. A structure, that is substantially transparent to the electromagnetic wave, includes a physical structure having a repeating pattern with a period L and a tilted angle .alpha., relative to a direction of travel of the charged particle beam, the pattern affects the force of the electromagnetic wave upon the charged particle beam. A direction device introduces the electromagnetic wave to the structure to provide a phase-synchronous deflection force to the charged particle beam.

  20. Method and apparatus for monitoring the power of a laser beam

    DOEpatents

    Paris, Robert D.; Hackel, Richard P.

    1996-01-01

    A method for monitoring the power of a laser beam in real time is disclosed. At least one optical fiber is placed through the laser beam, where a portion of light from the laser beam is coupled into the optical fiber. The optical fiber may be maintained in a stationary position or moved periodically over a cross section of the laser beam to couple light from each area traversed. Light reaching both fiber ends is monitored according to frequency and processed to determine the power of the laser beam.

  1. Method and apparatus for monitoring the power of a laser beam

    DOEpatents

    Paris, R.D.; Hackel, R.P.

    1996-02-06

    A method for monitoring the power of a laser beam in real time is disclosed. At least one optical fiber is placed through the laser beam, where a portion of light from the laser beam is coupled into the optical fiber. The optical fiber may be maintained in a stationary position or moved periodically over a cross section of the laser beam to couple light from each area traversed. Light reaching both fiber ends is monitored according to frequency and processed to determine the power of the laser beam. 6 figs.

  2. Method for Simulating the Thickness Distribution of a Cubic Boron Nitride Film Deposited on a Curved Substrate using Ion-beam-assisted Vapor Deposition

    NASA Astrophysics Data System (ADS)

    Kobayashi, T.; Valizadeh, R.; Colligon, J. S.; Kanematsu, H.; Morisato, K.

    A method for simulating the thickness distribution of cubic boron nitride (cBN) films deposited on a curved substrate using ion-beam-assisted vapor deposition (IBAD) is established and discussed. The deposition conditions are (i) boron arriving rate is 3.2 Å/s, (ii) ion current density is in the range 600-1600 μA/cm2, and (iii) gas composition fed into the ion source is 36% N2 + Ar. It was found that, due to simultaneous deposition and sputtering, the boron resputtering yield (which depends on the ion incident angle during cBN deposition) estimated from experimental data was higher than that of the boron sputtering yield of the BN films with a density of 3.482 g/cm3 calculated by the TRIM code. Using the above empirical boron resputtering yield, it is estimated that in the case of static coating, cBN films would not be formed when the incident angle is more than 40°. However, with continuous waving, the distribution of film thickness improves and the results are consistent with the experimental results. This estimation also agrees with the experimental results of discrete waving deposition within an allowable margin of error

  3. Method and apparatus for varying accelerator beam output energy

    DOEpatents

    Young, Lloyd M.

    1998-01-01

    A coupled cavity accelerator (CCA) accelerates a charged particle beam with rf energy from a rf source. An input accelerating cavity receives the charged particle beam and an output accelerating cavity outputs the charged particle beam at an increased energy. Intermediate accelerating cavities connect the input and the output accelerating cavities to accelerate the charged particle beam. A plurality of tunable coupling cavities are arranged so that each one of the tunable coupling cavities respectively connect an adjacent pair of the input, output, and intermediate accelerating cavities to transfer the rf energy along the accelerating cavities. An output tunable coupling cavity can be detuned to variably change the phase of the rf energy reflected from the output coupling cavity so that regions of the accelerator can be selectively turned off when one of the intermediate tunable coupling cavities is also detuned.

  4. Micro-beam friction liner and method of transferring energy

    DOEpatents

    Mentesana, Charles

    2007-07-17

    A micro-beam friction liner adapted to increase performance and efficiency and reduce wear in a piezoelectric motor or actuator or other device using a traveling or standing wave to transfer energy in the form of torque and momentum. The micro-beam friction liner comprises a dense array of micro-beam projections having first ends fixed relative to a rotor and second ends projecting substantially toward a plurality of teeth of a stator, wherein the micro-beam projections are compressed and bent during piezoelectric movement of the stator teeth, thereby storing the energy, and then react against the stator teeth to convert the stored energy stored to rotational energy in the rotor.

  5. Electrostatic dispersion lenses and ion beam dispersion methods

    DOEpatents

    Dahl, David A [Idaho Falls, ID; Appelhans, Anthony D [Idaho Falls, ID

    2010-12-28

    An EDL includes a case surface and at least one electrode surface. The EDL is configured to receive through the EDL a plurality of ion beams, to generate an electrostatic field between the one electrode surface and either the case surface or another electrode surface, and to increase the separation between the beams using the field. Other than an optional mid-plane intended to contain trajectories of the beams, the electrode surface or surfaces do not exhibit a plane of symmetry through which any beam received through the EDL must pass. In addition or in the alternative, the one electrode surface and either the case surface or the other electrode surface have geometries configured to shape the field to exhibit a less abrupt entrance and/or exit field transition in comparison to another electrostatic field shaped by two nested, one-quarter section, right cylindrical electrode surfaces with a constant gap width.

  6. Intersatellite communication laser beam steering and spoiling methods

    NASA Astrophysics Data System (ADS)

    Oleski, Paul J.

    1994-09-01

    In the area of free space optical communications a significant amount of attention has been given to the overall problems of the acquisition and tracking of satellites and the accurate alignment and positioning of optical components on board a spacecraft. Accomplishing these functions with minimal investment in hardware size, weight, and power is essential to the successful evolution of space laser communications (Lasercom). This paper presents two types of nonmechanical laser beam control devices. A nematic liquid crystal (LC) lens and wedge have been fabricated and tested. These electro-optic devices can provide the capability of acquisition, fine tracking, point ahead and alignment of a laser beam in Lasercom terminals. Characteristics such as optical efficiency, switching speed, beam steer range and beam divergence have been measured. Device design and performance parameters are described.

  7. Apparatus and method for increasing the bandwidth of a laser beam

    DOEpatents

    Chaffee, Paul H.

    1991-01-01

    A method and apparatus is disclosed that provides a laser output beam having a broad bandwidth and an intensity smooth over time. The bandwidth of the laser output can be varied easily by varying the intensity of a broadband source. The present invention includes an optical modulation apparatus comprising a narrowband laser that outputs a horizontally polarized beam (a "signal beam") and a broadband laser that outputs a vertically polarized beam (a "pump beam") whose intensity varies rapidly. The two beam are coupled into a birefringent laser material so that the respective polarizations coincide with the principal axes of the material. As the two beams travel through the material, the polarization preserving properties of the birefringent material maintain the respective polarizations of the two beam; however there is coupling between the two beams as a result of cross phase modulations, which induces a bandwidth change of the signal beam. The amount of bandwidth change is dependent upon the average intensity of the pump beam. The beams are coupled out from the birefringent material and the modulated signal beam is separated by a polarization selector. The modulated signal beam now has a wider bandwidth, and its shape remains smooth in time. This signal beam can be applied to incoherence inducing systems. The different bandwidths required by these different incoherence inducing systems can be obtained by varying the intensity of the pump beam. The United States Government has rights in this invention pursuant to Contract No. W7405-ENG-48 between the United States Department of Energy and the University of California for the operation of Lawrence Livermore National Laboratory.

  8. Perturbation method for the measurement of longitudinal and transverse beam impedance

    SciTech Connect

    Barry, W.; Lambertson, G.R.

    1987-03-01

    A perturbation method utilizing metallic and dielectric spheres to measure longitudinal and transverse beam and pickup impedances in accelerator components is described. The method was used to measure the longitudinal and transverse beam impedances of the 1 to 2 GeV light source beam pipe. In addition, the technique was used to measure the transverse pickup impedance of a 2 GHz cavity type Schottky signal monitor currently being installed in the FNAL Tevatron. Measurement results for both cases are presented.

  9. Development of laser-ion beam photodissociation methods

    SciTech Connect

    Russell, D.H.

    1990-08-01

    During this report period our research efforts have concentrated on studies of the dissociation reactions of model peptides and other biologically important molecules. In addition, a considerable amount of research effort has been directed toward improving the apparatus used for laser-ion beam photodissociation. The instrumental improvements include some changes on the original apparatus, but most of this effort involved designing a second generation laser-ion beam photodissociation instrument.

  10. METHOD AND APPARATUS FOR PULSING A CHARGED PARTICLE BEAM

    DOEpatents

    Aaland, K.; Kuenning, R.W.; Harmon, R.K.

    1961-05-01

    A system is offered for pulsing a continuous beam of charged particles to form beam pulses that are consistently rectangular and of precise time durations which may be varied over an extremely wide range at a widely variable range of repetition rates. The system generally comprises spaced deflection plates on opposite sides of a beam axis in between which a unidirectional bias field is established to deflect the beam for impingement on an off-axis collector. The bias field is periodically neutralized by the application of fast rise time substantially rectangular pulses to one of the deflection plates in opposition to the bias field and then after a time delay to the other deflection plate in aiding relation to the bias field and during the flat crest portion of the bias opposing pulses. The voltage distribution of the resulting deflection field then includes neutral or zero portions which are of symmetrical substantially rectangular configuration relative to time and during which the beam axially passes the collector in the form of a substantially rectangular beam pulse.

  11. CRIS: A new method in isomeric beam production

    NASA Astrophysics Data System (ADS)

    Lynch, K. M.; Billowes, J.; Bissell, M. L.; Budincevic, I.; Cocolios, T. E.; De Groote, R. P.; De Schepper, S.; Fedosseev, V. N.; Flanagan, K. T.; Franchoo, S.; Garcia Ruiz, R. F.; Heylen, H.; Marsh, B. A.; Mason, P. J. R.; Neyens, G.; Procter, T. J.; Rossel, R. E.; Rothe, S.; Simpson, G. S.; Smith, A. J.; Strashnov, I.; Stroke, H. H.; Walker, P. M.; Wendt, K. D. A.; Wood, R. T.

    2013-12-01

    The Collinear Resonance Ionization Spectroscopy (CRIS) experiment at ISOLDE, CERN, uses laser radiation to stepwise excite and ionize an atomic beam for the purpose of ultra-sensitive detection of rare isotopes, and hyperfine-structure measurements. The technique also offers the ability to purify an ion beam that is heavily contaminated with radioactive isobars, including the ground state of an isotope from its isomer, allowing decay spectroscopy on nuclear isomeric states to be performed. The isomeric ion beam is selected by resonantly exciting one of its hyperfine structure levels, and subsequently ionizing it. This selectively ionized beam is deflected to a decay spectroscopy station (DSS). This consists of a rotating wheel implantation system for alpha- and beta-decay spectroscopy, and up to three germanium detectors around the implantation site for gamma-ray detection. Resonance ionization spectroscopy and the new technique of laser assisted nuclear decay spectroscopy have recently been performed at the CRIS beam line on the neutron-deficient francium isotopes. Here an overview of the two techniques will be presented, alongside a description of the CRIS beam line and DSS.

  12. Nonmechanical laser beam steering/beam spoiling methods for intersatellite cross links

    NASA Astrophysics Data System (ADS)

    Oleski, Paul J.; Dorrian, Kevin W.; Busch, Timothy E.

    1994-08-01

    In the area of free space optical communications a significant amount of attention has been given to the overall problems of the acquisition and tracking of satellites. Accomplishing these functions with minimal investment in hardware size, weight, and power is essential to the successful evolution of space laser communications (LASERCOM). This paper studies and compares two different types of nonmechanical laser beam steering/diverging devices. A nematic liquid crystal phased array has been tested and compared to an acousto-optic Bragg cell. Both electro-optic devices are capable of simultaneous laser beam spoiling and steering which will provide an alternative to the use of electromechanical hardware for acquisition, fine tracking and point ahead in LASERCOM terminals. Characteristics such as optical efficiency, response time, beam steer range and divergence and power consumption have been measured. Device design and performance parameters are described.

  13. Sputtering Erosion in Ion and Plasma Thrusters

    NASA Technical Reports Server (NTRS)

    Ray, Pradosh K.

    1996-01-01

    Low energy sputtering of molybdenum, tantalum and boron nitride with xenon ions are being studied using secondary neutral and secondary ion mass spectrometry (SNMS/SIMS). An ultrahigh vacuum chamber was used to conduct the experiment at a base pressure of 1x10(exp -9) torr. The primary ion beam is generated by an ion gun which is capable of delivering ion currents in the range of 20 to 500 nA. The ion beam can be focused to a spot size of approximately 1 mm in diameter. The mass spectrometer is positioned 10 mm from the target and 90 deg to the primary ion beam direction. SNMS and SIMS spectra were collected at various incident angles and different ion energies. For boron nitride sputtering, the target was flooded with an electron beam to neutralize the charge buildup on the surface. In the SNMS mode, sputtering of Mo and Ta can be detected at an ion energy as low as 100 eV whereas in boron nitride the same was observed up to an energy of 300 eV. However, in the positive-SIMS mode, the sputtering of Mo was observed at 10 eV incident ion energy. The SIMS spectra obtained for boron nitride clearly identifies the two isotopes of boron as well as cluster ions such as B2(sup +) and molecular ions such as BN(sup +). From the angle versus yields measurements, it was found that the maximum SNMS yield shifts towards lower incident angles at low ion energies for all three samples.

  14. Sputtering Erosion in Ion and Plasma Thrusters

    NASA Technical Reports Server (NTRS)

    Ray, Pradosh K.

    1996-01-01

    Low energy sputtering of molybdenum, tantalum and boron nitride with xenon ions are being studied using secondary neutral and secondary ion mass spectrometry (SNMS/SIMS). An ultrahigh vacuum chamber was used to conduct the experiment at a base pressure of 1x10(exp -9) torr. The primary ion beam is generated by an ion gun which is capable of delivering ion currents in the range of 20 to 500 nA. The ion beam can be focused to a spot size of approximately 1 mm in diameter. The mass spectrometer is positioned 10 mm from the target and 90 deg to the primary ion beam direction. SNMS and SIMS spectra were collected at various incident angles and different ion energies. For boron nitride sputtering, the target was flooded with an electron beam to neutralize the charge buildup on the surface. In the SNMS mode, sputtering of Mo and Ta can be detected at an ion energy as low as 100 eV whereas in boron nitride the same was observed up to an energy of 300 eV. However, in the positive-SIMS mode, the sputtering of Mo was observed at 10 eV incident ion energy. The SIMS spectra obtained for boron nitride clearly identifies the two isotopes of boron as well as cluster ions such as B2(sup +) and molecular ions such as BN(sup +). From the angle versus yields measurements, it was found that the maximum SNMS yield shifts towards lower incident angles at low ion energies for all three samples.

  15. SU-D-BRC-01: An Automatic Beam Model Commissioning Method for Monte Carlo Simulations in Pencil-Beam Scanning Proton Therapy

    SciTech Connect

    Qin, N; Shen, C; Tian, Z; Jiang, S; Jia, X

    2016-06-15

    Purpose: Monte Carlo (MC) simulation is typically regarded as the most accurate dose calculation method for proton therapy. Yet for real clinical cases, the overall accuracy also depends on that of the MC beam model. Commissioning a beam model to faithfully represent a real beam requires finely tuning a set of model parameters, which could be tedious given the large number of pencil beams to commmission. This abstract reports an automatic beam-model commissioning method for pencil-beam scanning proton therapy via an optimization approach. Methods: We modeled a real pencil beam with energy and spatial spread following Gaussian distributions. Mean energy, and energy and spatial spread are model parameters. To commission against a real beam, we first performed MC simulations to calculate dose distributions of a set of ideal (monoenergetic, zero-size) pencil beams. Dose distribution for a real pencil beam is hence linear superposition of doses for those ideal pencil beams with weights in the Gaussian form. We formulated the commissioning task as an optimization problem, such that the calculated central axis depth dose and lateral profiles at several depths match corresponding measurements. An iterative algorithm combining conjugate gradient method and parameter fitting was employed to solve the optimization problem. We validated our method in simulation studies. Results: We calculated dose distributions for three real pencil beams with nominal energies 83, 147 and 199 MeV using realistic beam parameters. These data were regarded as measurements and used for commission. After commissioning, average difference in energy and beam spread between determined values and ground truth were 4.6% and 0.2%. With the commissioned model, we recomputed dose. Mean dose differences from measurements were 0.64%, 0.20% and 0.25%. Conclusion: The developed automatic MC beam-model commissioning method for pencil-beam scanning proton therapy can determine beam model parameters with

  16. Fundamental sputtering studies: Nonresonant ionization of sputtered neutrals

    SciTech Connect

    Burnett, J.W.; Pellin, M.J.; Calaway, W.F.; Gruen, D.M. ); Yates, J.T. Jr. . Dept. of Chemistry)

    1989-01-04

    Because of the practical importance of sputtering, numerous theories and computer simulations are used for predicting many aspects of the sputtering process. Unfortunately, many of the calculated sputtering results are untested by experiment. Until recently, most sputtering experiments required either very high ion fluences or the detection of only minor constituents of the sputtered flux, i.e., ions. These techniques may miss the subtleties involved in the sputtering process. High-detection-efficiency mass spectrometry, coupled with the laser ionization of neutral atoms, allows the detection of the major sputtered species with very low incident ion fluences. The depth-of-origin of sputtered atoms is one example of an important but poorly understood aspect of the sputtering process. By following the sputtering yield of a substrate atom with various coverages of an adsorbed overlayer, the depth of origin of sputtered atoms has been determined. Our results indicate that two-thirds of the sputtered flux originates in the topmost atomic layer. The ion-dose dependence of sputtering yields has long been assumed to be quite minor for low- to-moderate primary ion fluences. We have observed a two-fold decrease in the sputtering yield of the Ru(0001) surface for very low primary ion fluences. Data analysis results in a cross section for damage of 2.7 {plus minus} 1.0 {times} 10{sup {minus}15}cm{sup 2}. 40 refs., 3 figs., 2 tabs.

  17. Heavy particle transport in sputtering systems

    NASA Astrophysics Data System (ADS)

    Trieschmann, Jan

    2015-09-01

    This contribution aims to discuss the theoretical background of heavy particle transport in plasma sputtering systems such as direct current magnetron sputtering (dcMS), high power impulse magnetron sputtering (HiPIMS), or multi frequency capacitively coupled plasmas (MFCCP). Due to inherently low process pressures below one Pa only kinetic simulation models are suitable. In this work a model appropriate for the description of the transport of film forming particles sputtered of a target material has been devised within the frame of the OpenFOAM software (specifically dsmcFoam). The three dimensional model comprises of ejection of sputtered particles into the reactor chamber, their collisional transport through the volume, as well as deposition of the latter onto the surrounding surfaces (i.e. substrates, walls). An angular dependent Thompson energy distribution fitted to results from Monte-Carlo simulations is assumed initially. Binary collisions are treated via the M1 collision model, a modified variable hard sphere (VHS) model. The dynamics of sputtered and background gas species can be resolved self-consistently following the direct simulation Monte-Carlo (DSMC) approach or, whenever possible, simplified based on the test particle method (TPM) with the assumption of a constant, non-stationary background at a given temperature. At the example of an MFCCP research reactor the transport of sputtered aluminum is specifically discussed. For the peculiar configuration and under typical process conditions with argon as process gas the transport of aluminum sputtered of a circular target is shown to be governed by a one dimensional interaction of the imposed and backscattered particle fluxes. The results are analyzed and discussed on the basis of the obtained velocity distribution functions (VDF). This work is supported by the German Research Foundation (DFG) in the frame of the Collaborative Research Centre TRR 87.

  18. A comparison of methods for monitoring photon beam energy constancy.

    PubMed

    Gao, Song; Balter, Peter A; Rose, Mark; Simon, William E

    2016-11-08

    In extension of a previous study, we compared several photon beam energy metrics to determine which was the most sensitive to energy change; in addition to those, we accounted for both the sensitivity of each metric and the uncertainty in determining that metric for both traditional flattening filter (FF) beams (4, 6, 8, and 10 MV) and for flattening filter-free (FFF) beams (6 and 10 MV) on a Varian TrueBeam. We examined changes in these energy metrics when photon energies were changed to ± 5% and ± 10% from their nominal energies: 1) an attenuation-based metric (the percent depth dose at 10 cm depth, PDD(10)) and, 2) profile-based metrics, including flatness (Flat) and off-axis ratios (OARs) measured on the orthogonal axes or on the diagonals (diagonal normalized flatness, FDN). Profile-based metrics were measured near dmax and also near 10 cm depth in water (using a 3D scanner) and with ioniza-tion chamber array (ICA). PDD(10) was measured only in water. Changes in PDD, OAR, and FDN were nearly linear to the changes in the bend magnet current (BMI) over the range from -10% to +10% for both FF and FFF beams: a ± 10% change in energy resulted in a ± 1.5% change in PDD(10) for both FF and FFF beams, and changes in OAR and FDN were > 3.0% for FF beams and > 2.2% for FFF beams. The uncertainty in determining PDD(10) was estimated to be 0.15% and that for OAR and FDN about 0.07%. This resulted in minimally detectable changes in energy of 2.5% for PDD(10) and 0.5% for OAR and FDN. We found that the OAR- or FDN- based metrics were the best for detecting energy changes for both FF and FFF beams. The ability of the OAR-based metrics determined with a water scanner to detect energy changes was equivalent to that using an ionization chamber array. We recommend that OAR be measured either on the orthogonal axes or the diagonals, using an ionization chamber array near the depth of maximum dose, as a sensitive and efficient way to confirm stability of photon beam energy.

  19. Formation of biocompatible surface layers depending on the sputtering distance

    NASA Astrophysics Data System (ADS)

    Nasakina, E. O.; Seregin, A. V.; Baikin, A. S.; Kaplan, M. A.; Konushkin, S. V.; Sergiyenko, K. V.; Kovaleva, E. D.; Kolmakova, A. A.; Leonov, A. V.; Sevost'yanov, M. A.; Kolmakov, A. G.; Simakov, S. V.

    2017-05-01

    Nano- and micro-dimensional surface layers of silver and tantalum on flat and wire NiTi substrates by the method of magnetron sputtering in vacuum were produced. The structure and composition of the samples were determined using SEM and Auger spectroscopy. With an increase in the sputtering distance, the thickness of the surface layers decreases, and the thickness of the transition layer and the dependence of the thickness change as a whole depend on the nature of the sputtered substance.

  20. A fast beam hardening correction method incorporated in a filtered back-projection based MAP algorithm.

    PubMed

    Luo, Shouhua; Wu, Huazhen; Sun, Yi; Li, Jing; Li, Guang; Gu, Ning

    2017-03-07

    The beam hardening effect can induce strong artifacts in CT images, which result in severely deteriorated image quality with incorrect intensities (CT numbers). This paper develops an effective and efficient beam hardening correction algorithm incorporated in a filtered back-projection based maximum a posteriori (BHC-FMAP). In the proposed algorithm, the beam hardening effect is modeled and incorporated into the forward-projection of the MAP to suppress beam hardening induced artifacts, and the image update process is performed by Feldkamp-Davis-Kress method based back-projection to speed up the convergence. The proposed BHC-FMAP approach does not require information about the beam spectrum or the material properties, or any additional segmentation operation. The proposed method was qualitatively and quantitatively evaluated using both phantom and animal projection data. The experimental results demonstrate that the BHC-FMAP method can efficiently provide a good correction of beam hardening induced artefacts.

  1. A fast beam hardening correction method incorporated in a filtered back-projection based MAP algorithm

    NASA Astrophysics Data System (ADS)

    Luo, Shouhua; Wu, Huazhen; Sun, Yi; Li, Jing; Li, Guang; Gu, Ning

    2017-03-01

    The beam hardening effect can induce strong artifacts in CT images, which result in severely deteriorated image quality with incorrect intensities (CT numbers). This paper develops an effective and efficient beam hardening correction algorithm incorporated in a filtered back-projection based maximum a posteriori (BHC-FMAP). In the proposed algorithm, the beam hardening effect is modeled and incorporated into the forward-projection of the MAP to suppress beam hardening induced artifacts, and the image update process is performed by Feldkamp-Davis-Kress method based back-projection to speed up the convergence. The proposed BHC-FMAP approach does not require information about the beam spectrum or the material properties, or any additional segmentation operation. The proposed method was qualitatively and quantitatively evaluated using both phantom and animal projection data. The experimental results demonstrate that the BHC-FMAP method can efficiently provide a good correction of beam hardening induced artefacts.

  2. Real-time measurement of laser beam quality factor by the Fresnel phase-retrieval method

    NASA Astrophysics Data System (ADS)

    Yang, Pao-Keng; Liu, Jian-You; Chen, Yung-Chieh; Hsu, Chia-En

    2016-09-01

    Conventionally, it is a tedious work to measure the beam quality factor for a laser beam because one needs to move a camera-based beam profiler from one location to another for many times to record intensity profiles at different positions around the beam waist. We present a simple method for determining the laser beam quality factor from only two laser intensity profiles at different cross sections around the waist. We first used an iterative phase-retrieval algorithm, based on the Huygens-Fresnel principle, to reconstruct the phase profiles at the two cross sections where the intensity profiles had been measured. Once the optical field amplitude (the square root of intensity) and phase distribution functions at certain cross section of a laser beam had been determined, we can propagate the light wave at this cross section by using the Fresnel diffraction formula to obtain the intensity profiles at different positions, from which the beam quality factor can be determined. Using a HeNe laser for test, we had experimentally demonstrated the feasibility of our idea by showing that the result from our proposed method is in good agreement with that obtained from the conventional method. Our setup is capable of executing a real-time measurement of the beam quality factor because the two intensity profiles can be simultaneously recorded by using a beam splitter and two beam-profilers controlled by the same computer.

  3. Electron Beam Calibration Method for Character Projection Exposure System EX-8D

    NASA Astrophysics Data System (ADS)

    Sunaoshi, Hitoshi; Hattori, Kiyoshi; Takamatsu, Jun; Ando, Atsushi; Wada, Hirotsugu; Magoshi, Shunko; Yamaguchi, Toshio; Sato, Shinji; Nishimura, Shinsuke; Housai, Hiroaki; Hashimoto, Susumu; Yoshikawa, Ryouichi; Takigawa, Tadahiro

    1995-12-01

    A character beam calibration method has been developed for the electron beam exposure system EX-8D. The method concerns the character selection deflector, beam current density uniformity, beam size, direction, and position on the target. For the current density, the uniformity of less than 1.4 has been obtained in a 2-mm-square field. The beam size and the direction has been calibrated with an error of less than 1 nm in a 1-µm-square character beam. The overall error of the resist pattern size exposed by the character beam was estimated to be 7.2 nm. For the beam position on the target, the calibration accuracy of 0.023 µm has been obtained by a pattern matching method. After applying the calibration, 0.15 µm line-and-space patterns were exposed with good resolution by using the character beam. Also, a test pattern has been written with 0.02 µm stitching accuracy between variable shaped and character beams.

  4. An interpretation and guide to single-pass beam shaping methods using SLMs and DMDs

    NASA Astrophysics Data System (ADS)

    Stilgoe, Alexander B.; Kashchuk, Anatolii V.; Preece, Daryl; Rubinsztein-Dunlop, Halina

    2016-06-01

    Exquisite manipulations of light can be performed with devices such as spatial light modulators (SLMs) and digital micromirror devices (DMDs). These devices can be used to simulate transverse paraxial beam wavefunction eigenstates such as the Hermite-Laguerre-Gaussian mode families. We investigate several beam shaping methods in terms of the wavefunctions of scattered light. Our analysis of the efficiency, behaviour and limitations of beam shaping methods is applied to both theory and experiment. The deviation from the ideal output from a valid beam shaping method is shown to be due to experimental factors which are not necessarily being accounted for. Incident beam mode shape, aberration, and the amplitude/phase transfer functions of the DMD and SLM impact the distribution of scattered light and hence the effectiveness and efficiency of a beam shaping method. Correcting for these particular details of the optical system accounts for all differences in efficiency and mode fidelity between experiment and theory. We explicitly show the impact of experimental parameter variations so that these problems may be diagnosed and corrected in an experimental beam shaping apparatus. We show that several beam shaping methods can be used for the production of beam modes in a single pass and the choice is based on the particular experimental conditions.

  5. The photoactivity of titanium dioxide coatings with silver nanoparticles prepared by sol-gel and reactive magnetron sputtering methods - comparative studies

    NASA Astrophysics Data System (ADS)

    Kądzioła, Kinga; Piwoński, Ireneusz; Kisielewska, Aneta; Szczukocki, Dominik; Krawczyk, Barbara; Sielski, Jan

    2014-01-01

    Titanium dioxide coatings were deposited on silicon substrates using two different methods: sol-gel dip-coating (SG) and reactive magnetron sputtering (MS). In order to obtain anatase phase, as-prepared coatings were calcined at 500 °C in air. Subsequently, silver nanoparticles (AgNPs) were grown on the surface of TiO2 coatings by photoreduction of silver ions, initiated by illumination of the UV lamp operated at λ = 365 nm. The concentrations of silver ions were 0.1 mmol dm-3 and 1.0 mmol dm-3. Coatings immersed in these solutions were illuminated during 5 min and 30 min. The coating thicknesses, evaluated by ellipsometry, were 118 nm and 147 nm for SG and MS methods, respectively. Atomic force microscopy (AFM) imaging revealed that the surface roughness of TiO2 coating prepared by MS is about 6 times larger as compared to coatings prepared by SG method. The size of AgNPs deposited on SG and MS coatings were in the range of 17-132 nm and 54-103 nm respectively. The photoactivity of AgNPs/TiO2 coatings was determined by the measurement of the decomposition rate of bisphenol A (BPA). The concentration of BPA before and after illumination under UV light (λ = 365 nm) was monitored by high-performance liquid chromatography (HPLC). It was found that AgNPs enhance the photoactivity of the TiO2 coatings.

  6. Photoluminescence and compositional-structural properties of ion-beam sputter deposited Er-doped TiO{sub 2−x}N{sub x} films: Their potential as a temperature sensor

    SciTech Connect

    Scoca, D. Morales, M.; Merlo, R.; Alvarez, F.; Zanatta, A. R.

    2015-05-28

    Er-doped TiO{sub 2−x}N{sub x} films were grown by Ar{sup +} ion-beam sputtering a Ti + Er target under different N{sub 2} + O{sub 2} high-purity atmospheres. The compositional-structural properties of the samples were investigated after thermal annealing the films up to 1000 °C under a flow of oxygen. Sample characterization included x-ray photoelectron spectroscopy, grazing incidence x-ray diffraction, Raman scattering, and photoluminescence experiments. According to the experimental data, both composition and atomic structure of the samples were very sensitive to the growth conditions and annealing temperature. In the as-deposited form, the N-rich TiO{sub 2−x}N{sub x} films presented TiN crystallites and no photoluminescence. As the thermal treatments proceed, the films were transformed into TiO{sub 2} and Er{sup 3+}-related light emission were observed in the visible and near-infrared ranges at room-temperature. Whereas the development of TiO{sub 2} occurred due to the insertion-diffusion of oxygen in the films, light emission originated because of optical bandgap widening and/or structural-chemical variations in the vicinity of the Er{sup 3+} ions. Finally, the photoluminescence results in the visible range suggested the potential of the present samples in producing an optically based temperature sensor in the ∼150–500 K range.

  7. Optical material removal property analysis of Ar+ and Kr+ in ion beam figuring

    NASA Astrophysics Data System (ADS)

    Lu, Ying; Xie, Xu Hui; Zhou, Lin; Dai, Zuo Cai; Chen, Gui Yang

    2016-10-01

    Ion beam figuring (IBF) provides a highly deterministic method for the final precision figuring of optical components. According to the Sigmund sputtering theory, the mass of incident ions is an important factor to the sputtering rate and the optical surface quality. Both Ar+ and Kr+ are alternative ions in IBF, but the mass of Kr+ equals two times that of Ar+. In order to achieve the nanometer and sub-nanometer precision fabrication with IBF, the optical material removal property of Ar+ and Kr+ ions was researched. The bombardment process had been simulated with the software TRIM, and the sputtering yield of Ar+ and Kr+ ions for different incident angles was calculated. Then the removal function experiments on Si were conducted. The simulations and experiments result indicated that Ar+ ion beam achieves higher removal rate at 0° incident angle, but Kr+ ion beam performs more efficiently when the incident angle gets across a critical point.

  8. Dynamical simulation for sputtering of B 4C

    NASA Astrophysics Data System (ADS)

    Kenmotsu, T.; Kawamura, T.; Ono, T.; Yamamura, Y.

    1998-10-01

    Using ACAT-DIFFUSE code, we have simulated the fluence dependence of B 4C sputtering and the associated surface composition change under D + ion bombardment. The ACAT-DIFFUSE is a simulation code, which is based on a Monte Carlo method with a binary collision approximation and solves diffusion equations. In the case of near-threshold sputtering, the preferential sputtering of B atoms is enhanced by the threshold effect. As a result, the total sputtering yield at the steady state is reduced by about 20% compared with low-fluence sputtering. The surface concentration at steady state is determined by the competitive processes between diffusion and surface-atom removal due to sputtering. At normal incidence the interstitial diffusion contributes appreciably to the steady-state surface concentration, but at grazing incidence this effect is small. Therefore, the steady-state surface concentration ratio at grazing incidence is less than that of normal incidence.

  9. Nonpropulsive applications of ion beams

    NASA Technical Reports Server (NTRS)

    Hudson, W. R.

    1976-01-01

    Eight centimeter ion beam sources utilizing xenon and argon have been developed that operate over a wide range of beam energies and currents. Three types of processes have been studied: sputter deposition, ion beam machining, and ion beam surface texturing. The broad range of source operating conditions allows optimum sputter deposition of various materials. An ion beam source was used to ion mill laser reflection holograms using photoresist patterns on silicon. Ion beam texturing was tried with many materials and has a multitude of potential applications.

  10. Production of pulsed atomic oxygen beams via laser vaporization methods

    NASA Technical Reports Server (NTRS)

    Brinza, David E.; Coulter, Daniel R.; Liang, Ranty H.; Gupta, Amitava

    1986-01-01

    The generation of energetic pulsed atomic oxygen beams by laser-driven evaporation of cryogenically frozen ozone/oxygen films and thin indium-tin oxide (ITO) films is reported. Mass spectroscopy is used in the mass and energy characterization of beams from the ozone/oxygen films, and a peak flux of 3 x 10 to the 20th/sq m per sec at 10 eV is found. Analysis of the time-of-flight data suggests that several processes contribute to the formation of the oxygen beam. Results show the absence of metastable states such as the 2p(3)3s(1)(5S) level of atomic oxygen blown-off from the ITO films. The present process has application to the study of the oxygen degradation problem of LEO materials.

  11. A new method of rapid power measurement for MW-scale high-current particle beams

    NASA Astrophysics Data System (ADS)

    Xu, Yongjian; Hu, Chundong; Xie, Yuanlai; Liu, Zhimin; Xie, Yahong; Liu, Sheng; Liang, Lizheng; Jiang, Caichao; Sheng, Peng; Yu, Ling

    2015-09-01

    MW-scale high current particle beams are widely applied for plasma heating in the magnetic confinement fusion devices, in which beam power is an important indicator for efficient heating. Generally, power measurement of MW-scale high current particle beam adopts water flow calorimetry (WFC). Limited by the principles of WFC, the beam power given by WFC is an averaged value. In this article a new method of beam power for MW-scale high-current particle beams is introduced: (1) the temperature data of thermocouples embedded in the beam stopping elements were obtained using high data acquire system, (2) the surface heat flux of the beam stopping elements are calculated using heat transfer, (3) the relationships between positions and heat flux were acquired using numerical simulation, (4) the real-time power deposited on the beam stopping elements can be calculated using surface integral. The principle of measurement was described in detail and applied to the EAST neutral beam injector for demonstration. The result is compared with that measured by WFC. Comparison of the results shows good accuracy and applicability of this measuring method.

  12. A fast vector array adaptive beam forming method

    NASA Astrophysics Data System (ADS)

    Li, Zhizhong; Chen, Zhe; Li, Haitao; Xu, Zhongliang

    2017-06-01

    Based on model features of the vector sensor array signals, the paper transforms the time delay of broadband signals in time domain into the phase shift of different sub-bands in frequency domain to realize accurate time delay, and uses Hilbert Transform to construct analytic signals to form a fast vector array adaptive beam forming algorithm flow. The verification result with experimental data shows that this algorithm has much better target resolution capability than conventional beam forming algorithm. With the increase of 4-6dB in target detection capability, it has bright application prospect.

  13. Ecliptic method for the determination of backscatter into the beam monitor chambers in photon beams of medical accelerators.

    PubMed

    Sanz, Darío Esteban; Alvarez, Guillermo Daniel; Nelli, Flavio Enrico

    2007-03-21

    A new method to measure the effect of the backscatter into the beam monitor chambers in linear accelerators is introduced from first principles. The technique, applicable to high-energy photon beams, is similar to the well-known telescopic method although here the heavy blocks are replaced by a very small, centred block on the shadow tray, thus the name 'ecliptic method'. This effect, caused mainly by backscattering from the secondary collimators, is known to be an output factor constituent and must be accounted for when detailed calculations involving the machine's head are required. Since its magnitude is generally small, experimental errors might obscure the behaviour of the phenomenon. Consequently, the procedure introduced goes along with an uncertainty assessment. Our theory was confirmed via measurements in cobalt-60 beams, where the studied effect does not contribute to the output factor. Measurements were also performed on our Saturne 41 linear accelerator and the results were qualitatively similar to those described elsewhere. The collimation systems were studied separately by varying one jaw setting while keeping the other at its maximum value. In the light of these results, we deduced an algorithm that can correlate the former data with the effect of backscattering to the beam monitor chambers for any rectangular field within 0.5%, which is of the order of the experimental uncertainty (0.6%). As we show, the experimental procedure is safe, simple, not invasive for the linac and requires only basic dosimetry equipment.

  14. Method and apparatus for real time imaging and monitoring of radiotherapy beams

    DOEpatents

    Majewski, Stanislaw [Yorktown, VA; Proffitt, James [Newport News, VA; Macey, Daniel J [Birmingham, AL; Weisenberger, Andrew G [Yorktown, VA

    2011-11-01

    A method and apparatus for real time imaging and monitoring of radiation therapy beams is designed to preferentially distinguish and image low energy radiation from high energy secondary radiation emitted from a target as the result of therapeutic beam deposition. A detector having low sensitivity to high energy photons combined with a collimator designed to dynamically image in the region of the therapeutic beam target is used.

  15. TH-C-BRD-02: Analytical Modeling and Dose Calculation Method for Asymmetric Proton Pencil Beams

    SciTech Connect

    Gelover, E; Wang, D; Hill, P; Flynn, R; Hyer, D

    2014-06-15

    Purpose: A dynamic collimation system (DCS), which consists of two pairs of orthogonal trimmer blades driven by linear motors has been proposed to decrease the lateral penumbra in pencil beam scanning proton therapy. The DCS reduces lateral penumbra by intercepting the proton pencil beam near the lateral boundary of the target in the beam's eye view. The resultant trimmed pencil beams are asymmetric and laterally shifted, and therefore existing pencil beam dose calculation algorithms are not capable of trimmed beam dose calculations. This work develops a method to model and compute dose from trimmed pencil beams when using the DCS. Methods: MCNPX simulations were used to determine the dose distributions expected from various trimmer configurations using the DCS. Using these data, the lateral distribution for individual beamlets was modeled with a 2D asymmetric Gaussian function. The integral depth dose (IDD) of each configuration was also modeled by combining the IDD of an untrimmed pencil beam with a linear correction factor. The convolution of these two terms, along with the Highland approximation to account for lateral growth of the beam along the depth direction, allows a trimmed pencil beam dose distribution to be analytically generated. The algorithm was validated by computing dose for a single energy layer 5×5 cm{sup 2} treatment field, defined by the trimmers, using both the proposed method and MCNPX beamlets. Results: The Gaussian modeled asymmetric lateral profiles along the principal axes match the MCNPX data very well (R{sup 2}≥0.95 at the depth of the Bragg peak). For the 5×5 cm{sup 2} treatment plan created with both the modeled and MCNPX pencil beams, the passing rate of the 3D gamma test was 98% using a standard threshold of 3%/3 mm. Conclusion: An analytical method capable of accurately computing asymmetric pencil beam dose when using the DCS has been developed.

  16. Comparative study of beam losses and heat loads reduction methods in MITICA beam source

    SciTech Connect

    Sartori, E. Agostinetti, P.; Dal Bello, S.; Marcuzzi, D.; Serianni, G.; Veltri, P.; Sonato, P.

    2014-02-15

    In negative ion electrostatic accelerators a considerable fraction of extracted ions is lost by collision processes causing efficiency loss and heat deposition over the components. Stripping is proportional to the local density of gas, which is steadily injected in the plasma source; its pumping from the extraction and acceleration stages is a key functionality for the prototype of the ITER Neutral Beam Injector, and it can be simulated with the 3D code AVOCADO. Different geometric solutions were tested aiming at the reduction of the gas density. The parameter space considered is limited by constraints given by optics, aiming, voltage holding, beam uniformity, and mechanical feasibility. The guidelines of the optimization process are presented together with the proposed solutions and the results of numerical simulations.

  17. Comparative study of beam losses and heat loads reduction methods in MITICA beam source

    NASA Astrophysics Data System (ADS)

    Sartori, E.; Agostinetti, P.; Dal Bello, S.; Marcuzzi, D.; Serianni, G.; Sonato, P.; Veltri, P.

    2014-02-01

    In negative ion electrostatic accelerators a considerable fraction of extracted ions is lost by collision processes causing efficiency loss and heat deposition over the components. Stripping is proportional to the local density of gas, which is steadily injected in the plasma source; its pumping from the extraction and acceleration stages is a key functionality for the prototype of the ITER Neutral Beam Injector, and it can be simulated with the 3D code AVOCADO. Different geometric solutions were tested aiming at the reduction of the gas density. The parameter space considered is limited by constraints given by optics, aiming, voltage holding, beam uniformity, and mechanical feasibility. The guidelines of the optimization process are presented together with the proposed solutions and the results of numerical simulations.

  18. Comparative study of beam losses and heat loads reduction methods in MITICA beam source.

    PubMed

    Sartori, E; Agostinetti, P; Dal Bello, S; Marcuzzi, D; Serianni, G; Sonato, P; Veltri, P

    2014-02-01

    In negative ion electrostatic accelerators a considerable fraction of extracted ions is lost by collision processes causing efficiency loss and heat deposition over the components. Stripping is proportional to the local density of gas, which is steadily injected in the plasma source; its pumping from the extraction and acceleration stages is a key functionality for the prototype of the ITER Neutral Beam Injector, and it can be simulated with the 3D code AVOCADO. Different geometric solutions were tested aiming at the reduction of the gas density. The parameter space considered is limited by constraints given by optics, aiming, voltage holding, beam uniformity, and mechanical feasibility. The guidelines of the optimization process are presented together with the proposed solutions and the results of numerical simulations.

  19. Apparatus and method for increasing the bandwidth of a laser beam

    DOEpatents

    Wilcox, Russell B.

    1992-01-01

    A method and apparatus using sinusoidal cross-phase modulation, provides a laser pulse having a very broad bandwidth while substantially retaining the input laser's temporal shape. The modulator may be used in a master oscillator system for a laser having a master oscillator-power amplifier (MOPA) configration. The modulator utilizes a first laser providing an output wavelength .lambda. and a second laser providing an output wavelength shifted by a small amount to .lambda.+.DELTA..lambda.. Each beam has a single, linear polarization. Each beam is coupled into a length of polarization-preserving optical fiber. The first laser beam is coupled into the optical fiber with the beam's polarization aligned with the fiber's main axis, and the second beam is coupled into the fiber with its polarization rotated from the main axis by a predetermined angle. Within the fiber, the main axis' polarization defines an interference beam and the orthogonal axis' polarization defines a signal beam. In the interference beam, the first laser beam and the parallel polarized vector component of the other beam interfere to create areas of high and low intensity, which modulates the signal beam by cross phase modulation. Upon exit from the optical fiber, the beams are coupled out and the modulated signal beam is separated out by a polarization selector. The signal beam can be applied to coherence reducing systems to provide an output that is temporally and spatially incoherent. The U.S. Government has rights in this invention pursuant to Contract No. W7405-ENG-48 between the U.S. Department of Energy and the University of California for the operation of Lawrence Livermore National Laboratory.

  20. Production of pulsed atomic oxygen beams via laser vaporization methods

    NASA Technical Reports Server (NTRS)

    Brinza, David E.; Coulter, Daniel R.; Liang, Ranty H.; Gupta, Amitava

    1987-01-01

    Energetic pulsed atomic oxygen beams were generated by laser-driven evaporation of cryogenically frozen ozone/oxygen films and thin films of indium-tin oxide (ITO). Mass and energy characterization of beams from the ozone/oxygen films were carried out by mass spectrometry. The peak flux, found to occur at 10 eV, is estimated from this data to be 3 x 10(20) m(-2) s(-1). Analysis of the time-of-flight data indicates a number of processes contribute to the formation of the atomic oxygen beam. The absence of metastable states such as the 2p(3) 3s(1) (5S) level of atomic oxygen blown off from ITO films is supported by the failure to observe emission at 777.3 nm from the 2p(3) 3p(1) (5P sub J) levels. Reactive scattering experiments with polymer film targets for atomic oxygen bombardment are planned using a universal crossed molecular beam apparatus.

  1. Device and method for electron beam heating of a high density plasma

    DOEpatents

    Thode, Lester E.

    1981-01-01

    A device and method for relativistic electron beam heating of a high density plasma in a small localized region. A relativistic electron beam generator produces a high voltage electron beam which propagates along a vacuum drift tube and is modulated to initiate electron bunching within the beam. The beam is then directed through a low density gas chamber which provides isolation between the vacuum modulator and the relativistic electron beam target. The relativistic beam is then applied to a high density target plasma which typically comprises DT, DD, hydrogen boron or similar thermonuclear gas at a density of 10.sup.17 to 10.sup.20 electrons per cubic centimeter. The target plasma is ionized prior to application of the electron beam by means of a laser or other preionization source. Utilizing a relativistic electron beam with an individual particle energy exceeding 3 MeV, classical scattering by relativistic electrons passing through isolation foils is negligible. As a result, relativistic streaming instabilities are initiated within the high density target plasma causing the relativistic electron beam to efficiently deposit its energy into a small localized region within the high density plasma target.

  2. The influence of landing points on the sputtering of mono-crystal solids due to cluster impacting

    NASA Astrophysics Data System (ADS)

    Niu, Guo-jian; Li, Xiao-chun; Xu, Qian; Yang, Zhong-shi; Luo, Guang-nan

    2017-01-01

    The mechanism of sputtering due to cluster impacting which has been widely studied is an important but unsolved problem. In present research, we discuss the effect of the landing point on the sputtering with the method of molecular dynamics. The results show that the landing points play significant roles on sputter yield when the temperature of target is low. Specific landing points can cause particular sputtering patterns which lead to different sputtering yield and moving directions of sputtered atoms. The mechanism of this phenomenon is that specific landing keeps symmetries and anisotropies of target lattice, which influence the sputtering yield.

  3. Post-annealing Effects of CuInSe2(CIS) Absorber Layer at Thin Film Solar Cells with Compound Semiconductor Prepared by Co-sputtering Method

    NASA Astrophysics Data System (ADS)

    Kim, Haejin; Seo, Sung-Bo; Kim, Dongyoung; Bae, Kang; Sohn, Sunyoung; Kim, Hwa-Min; Hong, Jae-Suk

    2011-12-01

    In this study, we investigated the electrical and structural properties of CuInSe2(CIS) absorber layer with various post-annealing temperatures in thin-film solar cells prepared by co-sputtering method. The CIS film annealed at 550 °C compared with the films without and with annealing temperatures below 550 °C has the main growth peaks of chalcopyrite-like structure with CuInSe2 (112), CuInSe2 (220/204), and CuInSe2 (312/116), which resulted in increase of grain sizes and the improvement of crystallinity from the results of full width half maximum (FWHM) values and the intensity of peaks. And also, the carrier concentration and the mobility of the CIS thin film annealed at 550 °C were increased compared with the film without thermal treatment. Particularly, we suggest that the post-annealing of the CIS absorber layer at an optimized temperature can be applied for improving the device efficiency at the thin-film solar cells because the resistivity of the film annealed at 550 °C was decreased about 10-2 order compared with the film without post-annealing.

  4. Influence of deposition temperature on the growth of rutile TiO2 nanostructures by CBD method on seed layer prepared by RF magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Selman, Abbas M.; Hassan, Z.

    2013-12-01

    Rutile titanium dioxide (TiO2) nanostructures were successfully fabricated using the simple chemical bath deposition method at various deposition temperatures. These nanostructures were fabricated on (100 ± 10 nm) TiO2 seed layer coated glass, which was prepared via radio frequency (RF) magnetron sputtering at a substrate temperature of 350 °C. The synthesized TiO2 nanostructures were annealed at 550 °C for 2 h and examined via X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), photoluminescence (PL), and Raman spectroscopy. The XRD patterns showed the presence of the peaks characteristic of rutile phase. The band gap of the TiO2 nanostructures was calculated using the UV-vis absorption spectrum and was determined to be between 3.15 and 3.24 eV. The Raman spectra contained three characteristic bands at 232, 446 and 612 cm-1, which correspond to the tetragonal TiO2 rutile. The results showed good quality of nanocrystalline TiO2 rutile phase.

  5. Research on deformation characteristics and design method of concrete beams reinforced with GFRP bars

    NASA Astrophysics Data System (ADS)

    Pan, M. X.; Xu, X. S.

    2017-04-01

    Two different glass fiber reinforced polymer (GFRP) bars were produced to reinforce concrete beams, including plain GFRP bars and ribbed surface GFRP bars. The flexural property of GFRP reinforced concrete beams was studied by testing four specimen beams under two point vertical loads. The crack development and stain distribution of beam cross section during loading were recorded, and the deformation characteristics and failure mode were also analyzed in this experiment. According to the test results, the bond property of plain GFRP bars was too poor to serve as reinforcement bars, while the ribbed surface GFRP bars showed good bond performance and worked well with concrete before final failure. The test beam reinforced with ribbed surface GFRP bars exhibited a uniform crack distribution, and the strain agreed with the assumption of plane cross section. Moreover, calculation method for bending capacity of concrete beam strengthened with GFRP bars was deducted based on this experiment.

  6. Interaction of high power laser beams with plasma in ICF hohlraum using the FDTD method

    NASA Astrophysics Data System (ADS)

    Lin, Zhili

    2016-11-01

    In the indirect-drive Inertial confinement fusion (ICF) system, groups of laser beams are injected into a gold cylindrical hohlraum and plasma is stimulated with the ablation of the wall of hohlraum by the laser beams. In our work, the finite-difference time-domain (FDTD) method associated with the bilinear transform and Maclaurin series expansion approaches is utilized to examine the laser beam propagation in plasma described by the Drude model. The state-of-the-art approaches for generating the laser beams are presented and realized according to the full utilization of the TF/SF source condition. Base on the previous technologies, the quantitatively numerical analysis of the propagation characteristics of laser beams in the plasma is conducted. The obtained results are illustrated and discussed that are helpful for the parameter optimization of laser beams for an ICF system.

  7. On alternative methods for measuring the radius and propagation ratio of axially symmetric laser beams

    SciTech Connect

    Dementjev, Aleksandr S; Jovaisa, A; Silko, Galina; Ciegis, Raimondas

    2005-11-30

    Based on the developed efficient numerical methods for calculating the propagation of light beams, the alternative methods for measuring the beam radius and propagation ratio proposed in the international standard ISO 11146 are analysed. The specific calculations of the alternative beam propagation ratios M{sub i}{sup 2} performed for a number of test beams with a complicated spatial structure showed that the correlation coefficients c{sub i} used in the international standard do not establish the universal one-to-one relation between the alternative propagation ratios M{sub i}{sup 2} and invariant propagation ratios M{sub {sigma}}{sup 2} found by the method of moments. (laser beams)

  8. The vibrations of pre-twisted rotating Timoshenko beams by the Rayleigh-Ritz method

    NASA Astrophysics Data System (ADS)

    Zhu, T.-L.

    2011-04-01

    A modeling method for flapwise and chordwise bending vibration analysis of rotating pre-twisted Timoshenko beams is introduced. In the present modeling method, the shear and the rotary inertia effects on the modal characteristics are correctly included based on the Timoshenko beam theory. The kinetic and potential energy expressions of this model are derived from the Rayleigh-Ritz method, using a set of hybrid deformation variables. The equations of motion of the rotating beam are derived from the kinetic and potential energy expressions introduced in the present study. The equations thus derived are transmitted into dimensionless forms in which main dimensionless parameters are identified. The effects of dimensionless parameters such as the hub radius ratio, slenderness ration, etc. on the natural frequencies and modal characteristics of rotating pre-twisted beams are successfully examined through numerical studies. Finally the resonance frequency of the rotating beam is evaluated.

  9. SYSTEMATIC ERROR REDUCTION: NON-TILTED REFERENCE BEAM METHOD FOR LONG TRACE PROFILER.

    SciTech Connect

    QIAN,S.; QIAN, K.; HONG, Y.; SENG, L.; HO, T.; TAKACS, P.

    2007-08-25

    Systematic error in the Long Trace Profiler (LTP) has become the major error source as measurement accuracy enters the nanoradian and nanometer regime. Great efforts have been made to reduce the systematic error at a number of synchrotron radiation laboratories around the world. Generally, the LTP reference beam has to be tilted away from the optical axis in order to avoid fringe overlap between the sample and reference beams. However, a tilted reference beam will result in considerable systematic error due to optical system imperfections, which is difficult to correct. Six methods of implementing a non-tilted reference beam in the LTP are introduced: (1) application of an external precision angle device to measure and remove slide pitch error without a reference beam, (2) independent slide pitch test by use of not tilted reference beam, (3) non-tilted reference test combined with tilted sample, (4) penta-prism scanning mode without a reference beam correction, (5) non-tilted reference using a second optical head, and (6) alternate switching of data acquisition between the sample and reference beams. With a non-tilted reference method, the measurement accuracy can be improved significantly. Some measurement results are presented. Systematic error in the sample beam arm is not addressed in this paper and should be treated separately.

  10. High-precision method for determining the position of laser beam focal plane

    SciTech Connect

    Malashko, Ya I; Kleimenov, A N; Potemkin, I B; Khabibulin, V M

    2013-12-31

    The method of wavefront doubled-frequency spherical modulation for determining the laser beam waist position has been simulated and experimentally studied. The error in determining the focal plane position is less than 10{sup -5} D. The amplitude of the control doubled-frequency electric signal is experimentally found to correspond to 12% of the total radiation power. (laser beams)

  11. Ion Micro Beam, promising methods for interdisciplinary research

    NASA Astrophysics Data System (ADS)

    Cutroneo, M.; Havranek, V.; Torrisi, L.; Svecova, B.

    2016-05-01

    An increasing attractiveness of top-down nanotechnology using nuclear microprobe techniques have been gathered to the micro and nano patterning process for polymers. This paper presents the research activity on innovative promising techniques able to produce three- dimensional (3D) micro-structures in polymeric resists as well as to obtain images of fabricated nanostructures at Tandetron Laboratory (LT) of the Nuclear Physics Institute in Rez (Czech Republic). The Proton Beam Writing (PBW) technique was used to irradiate PMMA resist with energy of MeVs protons. The fabricated patterns were developed in chemical bath using different etching rates. An overview of micro-scale structures have been fabricated selecting the beam, the energy, the fluence and the exposition time. The produced structures were investigated by different analysis techniques among which Scanning Transmission Ion Microscopy (STIM). The characterizations of the fabricated microtunnels are presented and discussed.

  12. More on analyzing the reflection of a laser beam by a deformed highly reflective volume Bragg grating using iteration of the beam propagation method.

    PubMed

    Shu, Hong; Mokhov, Sergiy; Zeldovich, Boris Ya; Bass, Michael

    2009-01-01

    A further extension of the iteration method for beam propagation calculation is presented that can be applied for volume Bragg gratings (VBGs) with extremely large grating strength. A reformulation of the beam propagation formulation is presented for analyzing the reflection of a laser beam by a deformed VBG. These methods will be shown to be very accurate and efficient. A VBG with generic z-dependent distortion has been analyzed using these methods.

  13. Apparatus and methods for continuous beam fourier transform mass spectrometry

    DOEpatents

    McLuckey, Scott A.; Goeringer, Douglas E.

    2002-01-01

    A continuous beam Fourier transform mass spectrometer in which a sample of ions to be analyzed is trapped in a trapping field, and the ions in the range of the mass-to-charge ratios to be analyzed are excited at their characteristic frequencies of motion by a continuous excitation signal. The excited ions in resonant motions generate real or image currents continuously which can be detected and processed to provide a mass spectrum.

  14. Physics of ion sputtering

    SciTech Connect

    Robinson, M.T.

    1984-04-01

    The ejection of atoms by the ion bombardment of solids is discussed in terms of linear collision cascade theory. A simple argument describes the energies of the ejecta, but elaborate models are required to obtain accurate sputtering yields and related quantities. These include transport theoretical models based on linearized Boltzmann equations, computer simulation models based on the binary collision approximation, and classical many-body dynamical models. The role of each kind of model is discussed. Several aspects of sputtering are illustrated by results from the simulation code MARLOWE. 20 references, 6 figures.

  15. Effect of N doping on hole density of Cu2O:N films prepared by the reactive magnetron sputtering method

    NASA Astrophysics Data System (ADS)

    Li, B. B.; Lin, L.; Shen, H. L.; Boafo, F. E.; Chen, Z. F.; Liu, B.; Zhang, R.

    2012-05-01

    N-doped Cu2O thin films have been deposited on glass substrate by reactive magnetron sputtering method under various N2/O2 flow ratios from 0 to 1.0. The structural and electronic properties of Cu2O:N films were investigated by X-ray diffraction (XRD), four-point probe and Hall effect measurements. XRD pattern showed that crystalline structures of all the samples retained single phase of Cu2O with the increase of N2/O2 flow ratio from 0 to 1.0. However, the crystalline quality of Cu2O:N films reduced with the increase of the N2/O2 flow ratio. The phenomenon of peak shift of Cu2O(1 1 1) implied that N atoms have been doped into Cu2O film. The square resistance of Cu2O:N films linearly decreased from 28.1 to 1.5 (104 Ω/☐) with the increase of N2/O2 flow ratio from 0.2 to 0.6 initially, and then it changed slowly with the increase of N2/O2 flow ratio from 0.8 to 1.0. Hole density of Cu2O:N films with various N2/O2 flow ratios from 0 to 0.6 was measured using the Van der Pauw method. All the samples are p-type, and the hole density of Cu2O:N films was enhanced from 1.2 × 1016 cm-3 to 3.1 × 1019 cm-3 with the increase of N2/O2 flow ratio from 0 to 0.6. The experimental results demonstrated that N doping was an effective method to enhance hole density of p-type Cu2O film.

  16. Ion beam thruster shield

    NASA Technical Reports Server (NTRS)

    Power, J. L. (Inventor)

    1976-01-01

    An ion thruster beam shield is provided that comprises a cylindrical housing that extends downstream from the ion thruster and a plurality of annular vanes which are spaced along the length of the housing, and extend inwardly from the interior wall of the housing. The shield intercepts and stops all charge exchange and beam ions, neutral propellant, and sputter products formed due to the interaction of beam and shield emanating from the ion thruster outside of a fixed conical angle from the thruster axis. Further, the shield prevents the sputter products formed during the operation of the engine from escaping the interior volume of the shield.

  17. Incongruent sputtering in metal oxides

    NASA Astrophysics Data System (ADS)

    Langell, M. A.

    1987-11-01

    Preferential sputtering has been observed for NiO(100) and CoO(100) under low fluxes of 2 keV Ar +, with oxygen/metal sputtering yields a strong function of substrate temperature. Auger electron spectroscopy (AES) and X-ray photoelectron spectroscopy (XPS) were used to follow the chemical and compositional nature of the surface for substrates prepared and characterized under UHV. Using O/M AES ratios as a measure of oxygen content, congruent sputtering was found for the oxides at 300 K for fluences of up to 10 17 Ar +/cm 2 and threshold temperatures for sputter reduction were observed at 350 K and 500 K for NiO and CoO, respectively. The relatively close thresholds for NiO and CoO sputter reduction argue against current thermal sputtering theory which predicts incongruent sputtering through oxygen vaporization. The temperature dependence of the O/M sputtering yields indicates that metal oxide sputtering is far more complex than current theory is able to describe. XPS data show evidence that adsorbed oxygen species, distinct from lattice oxygen, have formed on surfaces which have undergone sputter reduction and these species are postulated to play a role in the sputtering mechanism. MnO(100) crystals show no evidence for preferential sputtering for substrate temperature of up to 1000 K.

  18. Spreading of a heavy ion beam with the dual-ring double scattering method

    NASA Astrophysics Data System (ADS)

    Himukai, T.; Furukawa, T.; Takeshita, E.; Inaniwa, T.; Mizushima, K.; Katagiri, K.; Takada, Y.

    2011-12-01

    A flat radiation field for heavy ion beams is used in research experiments and clinical treatments. When a flat field is required, a beam spreading system must be installed for a beam line; thus a simple and affordable method is desirable. To achieve the carbon ion beam spreading, we employed a dual-ring double scattering method (DDSM), which consists of an initial scattering foil and a dual-ring subsequent scatterer. The scatterers for the DDSM were designed and tested to verify the flatness of the radiation field of the carbon ion beam. We obtained 100 mm of the flat radiation field in the isocenter plane for the 2D radiation field, as expected. For the 3D radiation field, we obtained a field size of 80 mm. With a 60-min setup time, using the DDSM system, and by placing only two scatterers, we can form the flat radiation field.

  19. Method and system for controlling the position of a beam of light

    DOEpatents

    Steinkraus, Jr., Robert F.; Johnson, Gary W [Livermore, CA; Ruggiero, Anthony J [Livermore, CA

    2011-08-09

    An method and system for laser beam tracking and pointing is based on a conventional position sensing detector (PSD) or quadrant cell but with the use of amplitude-modulated light. A combination of logarithmic automatic gain control, filtering, and synchronous detection offers high angular precision with exceptional dynamic range and sensitivity, while maintaining wide bandwidth. Use of modulated light enables the tracking of multiple beams simultaneously through the use of different modulation frequencies. It also makes the system resistant to interfering light sources such as ambient light. Beam pointing is accomplished by feeding back errors in the measured beam position to a beam steering element, such as a steering mirror. Closed-loop tracking performance is superior to existing methods, especially under conditions of atmospheric scintillation.

  20. On the role of ion-based imaging methods in modern ion beam therapy

    NASA Astrophysics Data System (ADS)

    Magallanes, L.; Brons, S.; Marcelos, T.; Takechi, M.; Voss, B.; Jäkel, O.; Rinaldi, I.; Parodi, K.

    2014-11-01

    External beam radiotherapy techniques have the common aim to maximize the radiation dose to the target while sparing the surrounding healthy tissues. The inverted and finite depth-dose profile of ion beams (Bragg peak) allows for precise dose delivery and conformai dose distribution. Furthermore, increased radiobiological effectiveness of ions enhances the capability to battle radioresistant tumors. Ion beam therapy requires a precise determination of the ion range, which is particularly sensitive to range uncertainties. Therefore, novel imaging techniques are currently investigated as a tool to improve the quality of ion beam treatments. Approaches already clinically available or under development are based on the detection of secondary particles emitted as a result of nuclear reactions (e.g., positron-annihilation or prompt gammas, charged particles) or transmitted high energy primary ion beams. Transmission imaging techniques make use of the beams exiting the patient, which have higher initial energy and lower fluence than the therapeutic ones. At the Heidelberg Ion Beam Therapy Center, actively scanned energetic proton and carbon ion beams provide an ideal environment for the investigation of ion-based radiography and tomography. This contribution presents the rationale of ion beam therapy, focusing on the role of ion-based transmission imaging methods towards the reduction of range uncertainties and potential improvement of treatment planning.