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Sample records for bi doped cdte

  1. Investigation of the origin of deep levels in CdTe doped with Bi

    SciTech Connect

    Saucedo, E.; Franc, J.; Elhadidy, H.; Horodysky, P.; Ruiz, C. M.; Bermudez, V.; Sochinskii, N. V.

    2008-05-01

    Combining optical (low temperature photoluminescence), electrical (thermoelectric effect spectroscopy), and structural (synchrotron X-ray powder diffraction) methods, the defect structure of CdTe doped with Bi was studied in crystals with dopant concentration in the range of 10{sup 17}-10{sup 19} at./cm{sup 3}. The semi-insulating state observed in crystals with low Bi concentration is assigned to the formation of a shallow donor level and a deep donor recombination center. Studying the evolution of lattice parameter with temperature, we postulate that the deep center is formed by a Te-Te dimer and their formation is explained by a tetrahedral to octahedral distortion, due to the introduction of Bi in the CdTe lattice. We also shows that this model agrees with the electrical, optical, and transport charge properties of the samples.

  2. Challenges in p-type Doping of CdTe

    NASA Astrophysics Data System (ADS)

    McCoy, Jedidiah; Swain, Santosh; Lynn, Kelvin

    We have made progress in defect identification of arsenic and phosphorous doped CdTe to understand the self-compensation mechanism which will help improve minority bulk carrier lifetime and net acceptor density. Combining previous measurements of un-doped CdTe, we performed a systematic comparison of defects between different types of crystals and confirmed the defects impacting the doping efficiency. CdTe bulk crystals have been grown via vertical Bridgman based melt growth technique with varying arsenic and phosphorous dopant schemes to attain p-type material. Furnace temperature profiles were varied to influence dopant solubility. Large carrier densities have been reproducibly obtained from these boules indicating successful incorporation of dopants into the lattice. However, these values are orders of magnitude lower than theoretical solubility values. Infrared Microscopy has revealed a plethora of geometrically abnormal second phase defects and X-ray Fluorescence has been used to identify the elemental composition of these defects. We believe that dopants become incorporated into these second phase defects as Cd compounds which act to inhibit dopant solubility in the lattice.

  3. Phosphorus Doping of Polycrystalline CdTe by Diffusion

    SciTech Connect

    Colegrove, Eric; Albin, David S.; Guthrey, Harvey; Harvey, Steve; Burst, James; Moutinho, Helio; Farrell, Stuart; Al-Jassim, Mowafak; Metzger, Wyatt K.

    2015-06-14

    Phosphorus diffusion in single crystal and polycrystalline CdTe material is explored using various methods. Dynamic secondary ion mass spectroscopy (SIMS) is used to determine 1D P diffusion profiles. A 2D diffusion model is used to determine the expected cross-sectional distribution of P in CdTe after diffusion anneals. Time of flight SIMS and cross-sectional cathodoluminescence corroborates expected P distributions. Devices fabricated with diffused P exhibit hole concentrations up to low 1015 cm-3, however a subsequent activation anneal enabled hole concentrations greater than 1016 cm-3. CdCl2 treatments and Cu based contacts were also explored in conjunction with the P doping process.

  4. Synthesis and enhanced fluorescence of Ag doped CdTe semiconductor quantum dots.

    PubMed

    Ding, Si-Jing; Liang, Shan; Nan, Fan; Liu, Xiao-Li; Wang, Jia-Hong; Zhou, Li; Yu, Xue-Feng; Hao, Zhong-Hua; Wang, Qu-Quan

    2015-02-07

    Doping with intentional impurities is an intriguing way to tune the properties of semiconductor nanocrystals. However, the synthesis of some specific doped semiconductor nanocrystals remains a challenge and the doping mechanism in this strongly confined system is still not clearly understood. In this work, we report, for the first time, the synthesis of stable and water-soluble Ag-doped CdTe semiconductor quantum dots (SQDs) via a facile aqueous approach. Experimental characterization demonstrated the efficient doping of the Ag impurities into the CdTe SQDs with an appropriate reaction time. By doping 0.3% Ag impurities, the Stokes shift is decreased by 120 meV, the fluorescence intensity is enhanced more than 3 times, the radiative rate is enhanced 4.2 times, and the non-radiative rate is efficiently suppressed. These observations reveal that the fluorescence enhancement in Ag-doped CdTe SQDs is mainly attributed to the minimization of surface defects, filling of the trap states, and the enhancement of the radiative rate by the silver dopants. Our results suggest that the silver doping is an efficient method for tuning the optical properties of the CdTe SQDs.

  5. Doping of polycrystalline CdTe for high-efficiency solar cells on flexible metal foil.

    PubMed

    Kranz, Lukas; Gretener, Christina; Perrenoud, Julian; Schmitt, Rafael; Pianezzi, Fabian; La Mattina, Fabio; Blösch, Patrick; Cheah, Erik; Chirilă, Adrian; Fella, Carolin M; Hagendorfer, Harald; Jäger, Timo; Nishiwaki, Shiro; Uhl, Alexander R; Buecheler, Stephan; Tiwari, Ayodhya N

    2013-01-01

    Roll-to-roll manufacturing of CdTe solar cells on flexible metal foil substrates is one of the most attractive options for low-cost photovoltaic module production. However, various efforts to grow CdTe solar cells on metal foil have resulted in low efficiencies. This is caused by the fact that the conventional device structure must be inverted, which imposes severe restrictions on device processing and consequently limits the electronic quality of the CdTe layer. Here we introduce an innovative concept for the controlled doping of the CdTe layer in the inverted device structure by means of evaporation of sub-monolayer amounts of Cu and subsequent annealing, which enables breakthrough efficiencies up to 13.6%. For the first time, CdTe solar cells on metal foil exceed the 10% efficiency threshold for industrialization. The controlled doping of CdTe with Cu leads to increased hole density, enhanced carrier lifetime and improved carrier collection in the solar cell. Our results offer new research directions for solving persistent challenges of CdTe photovoltaics.

  6. Doping of polycrystalline CdTe for high-efficiency solar cells on flexible metal foil

    NASA Astrophysics Data System (ADS)

    Kranz, Lukas; Gretener, Christina; Perrenoud, Julian; Schmitt, Rafael; Pianezzi, Fabian; La Mattina, Fabio; Blösch, Patrick; Cheah, Erik; Chirilă, Adrian; Fella, Carolin M.; Hagendorfer, Harald; Jäger, Timo; Nishiwaki, Shiro; Uhl, Alexander R.; Buecheler, Stephan; Tiwari, Ayodhya N.

    2013-08-01

    Roll-to-roll manufacturing of CdTe solar cells on flexible metal foil substrates is one of the most attractive options for low-cost photovoltaic module production. However, various efforts to grow CdTe solar cells on metal foil have resulted in low efficiencies. This is caused by the fact that the conventional device structure must be inverted, which imposes severe restrictions on device processing and consequently limits the electronic quality of the CdTe layer. Here we introduce an innovative concept for the controlled doping of the CdTe layer in the inverted device structure by means of evaporation of sub-monolayer amounts of Cu and subsequent annealing, which enables breakthrough efficiencies up to 13.6%. For the first time, CdTe solar cells on metal foil exceed the 10% efficiency threshold for industrialization. The controlled doping of CdTe with Cu leads to increased hole density, enhanced carrier lifetime and improved carrier collection in the solar cell. Our results offer new research directions for solving persistent challenges of CdTe photovoltaics.

  7. Basic physics of phototransport as manifested in thin films of In-doped CdTe

    NASA Astrophysics Data System (ADS)

    Balberg, I.; Dover, Y.; Savir, E.; von Huth, P.

    2010-11-01

    Recognizing the interesting effects associated with deep centers in II-VI semiconductors, we reveal the recombination centers map in In-doped CdTe thin films by introducing a systematic and comprehensive phototransport spectroscopy method. The method is more reliable than previous phototransport methods as it is based on a stringent self-consistency of the temperature dependencies of four phototransport properties with a given model. This limits the number of scenarios and narrows the parameter space that can account for the experimental data. We suggest that the deep centers that can account for the data in the studied CdTe system lie both above and below the Fermi level, and that their special distribution can account for some of the “exotic” or “puzzling” phenomena observed in n -type CdTe. However, the main purpose of this work is to use the analysis of the In-doped CdTe system as a vehicle for a quantitative comprehensive test of the qualitative physical-analytic ideas of Rose that have guided numerous studies of phototransport in semiconductors. Introducing here the concept of the “center of gravity” of the density of states distribution further extends these basic ideas.

  8. Thermoelectric Properties of Bi Doped Tetrahedrite

    NASA Astrophysics Data System (ADS)

    Prem Kumar, D. S.; Chetty, R.; Femi, O. E.; Chattopadhyay, K.; Malar, P.; Mallik, R. C.

    2016-08-01

    Bi doped tetrahedrites with nominal compositions of Cu12Sb4-x Bi x S13 (x = 0, 0.2, 0.4, 0.6, 0.8) were synthesized by the solid state reaction method. Powder x-ray diffraction patterns confirmed that Cu12Sb4S13 (tetrahedrite structure) was the main phase, along with Cu3SbS4 and Cu3SbS3 as the secondary phases. Electron probe microanalysis provided the elemental composition of all the samples. It was confirmed that the main phase is the tetrahedrite phase with slight deviations in the stoichiometry. All the transport properties were measured between 423 K and 673 K. The electrical resistivity increased with an increase in Bi content for all the samples, possibly induced by the variation in the carrier concentration, which may be due to the influence of impurity phases. The increase in electrical resistivity with an increase in temperature indicates the degenerate semiconducting nature of the samples. The absolute Seebeck coefficient is positive throughout the temperature range indicating the p-type nature of the samples. The Seebeck coefficient for all the samples increased with an increase in Bi content as electrical resistivity. The variation of electrical resistivity and the Seebeck coefficient with doping can be attributed to the changes in the carrier concentration of the samples. The total thermal conductivity increases with an increase in temperature and decreases with an increase in the Bi content that could be due to the reduction in carrier thermal conductivity. The highest thermoelectric figure of merit (zT) ~0.84 at 673 K was obtained for the sample with x = 0.2 due to lower thermal conductivity (1.17 W/m K).

  9. Local polarization phenomena in In-doped CdTe x-ray detector arrays

    SciTech Connect

    Sato, Toshiyuki; Sato, Kenji; Ishida, Shinichiro; Kiri, Motosada; Hirooka, Megumi; Yamada, Masayoshi; Kanamori, Hitoshi

    1995-10-01

    Local polarization phenomena have been studied in detector arrays with the detector element size of 500 {micro}m x 500 {micro}m, which are fabricated from high-resistivity In-doped CdTe crystals grown by the vertical Bridgman technique. It has been found for the first time that a polarization effect, which is characterized by a progressive decrease of the pulse counting rate with increasing photon fluence, strongly depends on the detector elements, that is, the portion of crystals used. The influence of several parameters, such as the applied electric field strength, time, and temperature, on this local polarization effect is also investigated. From the photoluminescence measurements of the inhomogeneity of In dopant, it is concluded that the local polarization effect observed here originates from a deep level associated with In dopant in CdTe crystals.

  10. First-principles DFT +G W study of oxygen-doped CdTe

    NASA Astrophysics Data System (ADS)

    Flores, Mauricio A.; Orellana, Walter; Menéndez-Proupin, Eduardo

    2016-05-01

    The role of oxygen doping in CdTe is addressed by first-principles calculations. Formation energies, charge transition levels, and quasiparticle defect states are calculated within the DFT+G W formalism. The formation of a new defect is identified, the (OTe-TeCd) complex.Thiscomplex is energetically favored over both isovalent (OTe) and interstitial oxygen (Oi), in the Te-rich limit. We find that the incorporation of oxygen passivates the harmful deep energy levels associated with (TeCd), suggesting an improvement in the efficiency of CdTe based solar cells. Substitutional (OCd) is only stable in the neutral charge state and undergoes a Jahn-Teller distortion. We also investigate the diffusion profiles of interstitial oxygen and find a low-energy diffusion barrier of only 0.14 eV between two structurally distinct interstitial sites.

  11. Structural, optical and photovoltaic properties of co-doped CdTe QDs for quantum dots sensitized solar cells

    NASA Astrophysics Data System (ADS)

    Ayyaswamy, Arivarasan; Ganapathy, Sasikala; Alsalme, Ali; Alghamdi, Abdulaziz; Ramasamy, Jayavel

    2015-12-01

    Zinc and sulfur alloyed CdTe quantum dots (QDs) sensitized TiO2 photoelectrodes have been fabricated for quantum dots sensitized solar cells. Alloyed CdTe QDs were prepared in aqueous phase using mercaptosuccinic acid (MSA) as a capping agent. The influence of co-doping on the structural property of CdTe QDs was studied by XRD analysis. The enhanced optical absorption of alloyed CdTe QDs was studied using UV-vis absorption and fluorescence emission spectra. The capping of MSA molecules over CdTe QDs was confirmed by the FTIR and XPS analyses. Thermogravimetric analysis confirms that the prepared QDs were thermally stable up to 600 °C. The photovoltaic performance of alloyed CdTe QDs sensitized TiO2 photoelectrodes were studied using J-V characteristics under the illumination of light with 1 Sun intensity. These results show the highest photo conversion efficiency of η = 1.21%-5% Zn & S alloyed CdTe QDs.

  12. First-principles DFT+GW study of oxygen doped CdTe

    NASA Astrophysics Data System (ADS)

    Orellana, Walter; Flores, Mauricio A.; Menéndez-Proupin, Eduardo

    The role of oxygen doping in CdTe is addressed by first-principles calculations. Formation energies, charge transition levels and quasiparticle defect states are calculated within the DFT+GW formalism. The formation of a new defect is identified, the (OTe -TeCd) complex. This complex is energetically favored over both isovalent (OTe) and interstitial oxygen (Oi). We find that incorporation of oxygen passivates the harmful deep energy levels derived from Te antisites, suggesting an improvement in the efficiency of CdTe based solar cells. Our calculations indicate that both (OTe) and (Oi) have low formation energies. Moreover, (OCd) is only stable in the neutral charge state and undergoes a Jahn-Teller distortion. The (VCd - OTe) complex is found to be a shallow acceptor with a high formation energy. We also report an oxygen-related interstitial defect, which plays a key role in the diffusion mechanism of oxygen in CdTe. Support by FONDECYT Grant No. 1130437 is acknowledged. Powered@NLHPC: This research was partially supported by the supercomputing infrastructure of the NLHPC (ECM-02).

  13. Sn-doped CdTe as promising intermediate-band photovoltaic material

    NASA Astrophysics Data System (ADS)

    Flores, Mauricio A.; Menéndez-Proupin, Eduardo; Orellana, Walter; Peña, Juan L.

    2017-01-01

    The formation energies, charge transition levels and quasiparticle defect states of several tin-related impurities are investigated within the DFT  +  GW formalism. The optical spectrum obtained from the solution of the Bethe-Salpeter equation shows that the absorption strongly increases in the sub-bandgap region after doping, suggesting a two-step photoexcitation process that facilitates transitions from photons with insufficient energy to cause direct transitions from the valence to the conduction band via an intermediate-band. We propose Sn-doped CdTe as a promising candidate for the development of high-efficiency solar cells, which could potentially overcome the Shockley-Queisser limit.

  14. Cu-doped CdS and its application in CdTe thin film solar cell

    NASA Astrophysics Data System (ADS)

    Deng, Yi; Yang, Jun; Yang, Ruilong; Shen, Kai; Wang, Dezhao; Wang, Deliang

    2016-01-01

    Cu is widely used in the back contact formation of CdTe thin film solar cells. However, Cu is easily to diffuse from the back contact into the CdTe absorber layer and even to the cell junction interface CdS/CdTe. This phenomenon is generally believed to be the main factor affecting the CdTe solar cell stability. In this study Cu was intentionally doped in CdS thin film to study its effect on the microstructural, optical and electrical properties of the CdS material. Upon Cu doping, the VCd- and the surface-state-related photoluminescence emissions were dramatically decreased/quenched. The presence of Cu atom hindered the recrystallization/coalescence of the nano-sized grains in the as-deposited CdS film during the air and the CdCl2 annealing. CdTe thin film solar cell fabricated with Cu-doped CdS window layers demonstrated much decreased fill factor, which was induced by the increased space-charge recombination near the p-n junction and the worsened junction crystalline quality. Temperature dependent current-voltage curve measurement indicated that the doped Cu in the CdS window layer was not stable at both room and higher temperatures.

  15. Cu-doped CdS and its application in CdTe thin film solar cell

    SciTech Connect

    Deng, Yi; Yang, Jun; Yang, Ruilong; Shen, Kai; Wang, Dezhao; Wang, Deliang

    2016-01-15

    Cu is widely used in the back contact formation of CdTe thin film solar cells. However, Cu is easily to diffuse from the back contact into the CdTe absorber layer and even to the cell junction interface CdS/CdTe. This phenomenon is generally believed to be the main factor affecting the CdTe solar cell stability. In this study Cu was intentionally doped in CdS thin film to study its effect on the microstructural, optical and electrical properties of the CdS material. Upon Cu doping, the V{sub Cd{sup −}} and the surface-state-related photoluminescence emissions were dramatically decreased/quenched. The presence of Cu atom hindered the recrystallization/coalescence of the nano-sized grains in the as-deposited CdS film during the air and the CdCl{sub 2} annealing. CdTe thin film solar cell fabricated with Cu-doped CdS window layers demonstrated much decreased fill factor, which was induced by the increased space-charge recombination near the p-n junction and the worsened junction crystalline quality. Temperature dependent current-voltage curve measurement indicated that the doped Cu in the CdS window layer was not stable at both room and higher temperatures.

  16. Creation and Analysis of Atomic Structures for CdTe Bi-crystal Interfaces by the Grain Boundary Genie

    SciTech Connect

    Buurma, Christopher; Sen, Fatih G.; Paulauskas, Tadas; Sun, Ce; Kim, Moon; Sivananthan, Sivalingam; Klie, Robert F; Chan, Maria K. Y.

    2015-01-01

    Grain boundaries (GB) in poly-CdTe solar cells play an important role in species diffusion, segregation, defect formation, and carrier recombination. While the creation of specific high-symmetry interfaces can be straight forward, the creation of general GB structures in many material systems is difficult if periodic boundary conditions are to be enforced. Here we describe a novel algorithm and implementation to generate initial general GB structures for CdTe in an automated way, and we investigate some of these structures using density functional theory (DFT). Example structures include those with bi-crystals already fabricated for comparison, and those planning to be investigated in the future.

  17. Visualization of hormone binding proteins in vivo based on Mn-doped CdTe QDs

    NASA Astrophysics Data System (ADS)

    Liu, Fang fei; Yu, Ying; Lin, Bi xia; Hu, Xiao gang; Cao, Yu juan; Wu, Jian zhong

    2014-10-01

    Daminozide (B9) is a growth inhibitor with important regulatory roles in plant growth and development. Locating and quantifying B9-binding proteins in plant tissues will assist in investigating the mechanism behind the signal transduction of B9. In this study, red fluorescent Mn-doped CdTe quantum dots (CdTeMn QDs) were synthesized by a high-temperature hydrothermal process. Since CdTeMn QDs possess a maximum fluorescence emission peak at 610 nm, their fluorescence properties are more stable than those of CdTe QDs. A B9-CdTeMn probe was synthesized by coupling B9 with CdTeMn QDs. The fluorescence intensity of the probe is double that of CdTeMn QDs; its fluorescence stability is also superior under different ambient conditions. The probe retains the biological activity of B9 and is unaffected by interference from the green fluorescent protein present in plants. Therefore, we used this probe to label B9-binding proteins selectively in root tissue sections of mung bean seedlings. These proteins were observed predominantly on the surfaces of the cell membranes of the cortex and epidermal parenchyma.

  18. Magnetic properties of vanadium doped CdTe: Ab initio calculations

    NASA Astrophysics Data System (ADS)

    Goumrhar, F.; Bahmad, L.; Mounkachi, O.; Benyoussef, A.

    2017-04-01

    In this paper, we are applying the ab initio calculations to study the magnetic properties of vanadium doped CdTe. This study is based on the Korringa-Kohn-Rostoker method (KKR) combined with the coherent potential approximation (CPA), within the local density approximation (LDA). This method is called KKR-CPA-LDA. We have calculated and plotted the density of states (DOS) in the energy diagram for different concentrations of dopants. We have also investigated the magnetic and half-metallic properties of this compound and shown the mechanism of exchange interaction. Moreover, we have estimated the Curie temperature Tc for different concentrations. Finally, we have shown how the crystal field and the exchange splittings vary as a function of the concentrations.

  19. Bi-Se doped with Cu, p-type semiconductor

    DOEpatents

    Bhattacharya, Raghu Nath; Phok, Sovannary; Parilla, Philip Anthony

    2013-08-20

    A Bi--Se doped with Cu, p-type semiconductor, preferably used as an absorber material in a photovoltaic device. Preferably the semiconductor has at least 20 molar percent Cu. In a preferred embodiment, the semiconductor comprises at least 28 molar percent of Cu. In one embodiment, the semiconductor comprises a molar percentage of Cu and Bi whereby the molar percentage of Cu divided by the molar percentage of Bi is greater than 1.2. In a preferred embodiment, the semiconductor is manufactured as a thin film having a thickness less than 600 nm.

  20. Superconductivity Induced by Oxygen Doping in Y2 O2 Bi.

    PubMed

    Cheng, Xiyue; Gordon, Elijah E; Whangbo, Myung-Hwan; Deng, Shuiquan

    2017-04-03

    When doped with oxygen, the layered Y2 O2 Bi phase becomes a superconductor. This finding raises questions about the sites for doped oxygen, the mechanism of superconductivity, and practical guidelines for discovering new superconductors. We probed these questions in terms of first-principles calculations for undoped and O-doped Y2 O2 Bi. The preferred sites for doped O atoms are the centers of Bi4 squares in the Bi square net. Several Bi 6p x/y bands of Y2 O2 Bi are raised in energy by oxygen doping because the 2p x/y orbitals of the doped oxygen make antibonding possible with the 6p x/y orbitals of surrounding Bi atoms. Consequently, the condition necessary for the "flat/steep" band model for superconductivity is satisfied in O-doped Y2 O2 Bi.

  1. Resonant Levels, Vacancies, and Doping in Bi2Te3, Bi2Te2Se, and Bi2Se3 Tetradymites

    NASA Astrophysics Data System (ADS)

    Wiendlocha, Bartlomiej

    2016-07-01

    The electronic structure of the tetradymites, Bi_2Te_3, Bi_2Te_2Se, and Bi_2Se_3, containing various dopants and vacancies, has been studied using first-principles calculations. We focus on the possibility of formation of resonant levels (RL), confirming the formation of RL by Sn in Bi_2Te_3 and predicting similar behavior of Sn in Bi_2Te_2Se and Bi_2Se_3. Vacancies, which are likely present on chalcogen atom sites in real samples of Bi_2Te_2Se and Bi_2Se_3, are also studied and their charged donor and resonant behavior discussed. Doping of vacancy-containing materials with regular acceptors, such as Ca or Mg, is shown to compensate the donor effect of vacancies, and n-p crossover, while increasing the dopant concentration, is observed. We verify that the RL on Sn is not disturbed by chalcogen vacancies in Bi_2Te_2Se or Bi_2Se_3, and for the Sn-doped materials with Se or Te vacancies, double doping, instead of heavy doping with Sn, is suggested as an effective way of obtaining the resonant level. This should help to avoid smearing of the RL, a possible reason for earlier unsuccessful experimental observation of the influence of the RL on the thermoelectric properties of Sn-doped Bi_2Te_2Se. Finally, we show that Al and Ga are possible new resonant impurities in tetradymites, hoping that this will stimulate further experimental studies.

  2. Ab-initio study of structural, electronic and magnetic properties of CdTe doped transition metal Co

    NASA Astrophysics Data System (ADS)

    Zitouni, A.; Bentata, Samir; Benstaali, W.; Abbar, B.

    2014-07-01

    The full potential linear augmented plane wave (FPLAPW) based on density-functional theory (DFT) is employed to study the structural, electronic and magnetic properties of transition metal Co doped CdTe. We have analyzed the structural parameters, charge and spin densities, total and partial densities of states within the generalized gradient approximation (GGA). The results show a Half-Metallic Dilute Magnetic Semiconductors (HM-DMS) character with an important magnetic moment. The results obtained, make the CoxCd1-xTe a potential promising candidate for application in spintronics.

  3. Influence of photoinduced Bi-related self-doping on the photocatalytic activity of BiOBr nanosheets

    NASA Astrophysics Data System (ADS)

    Wu, Dan; Yue, Songtao; Wang, Wei; An, Tiacheng; Li, Guiying; Ye, Liqun; Yip, Ho Yin; Wong, Po Keung

    2017-01-01

    Under UV irradiation, self-doped Bi5+ is evidenced to be generated on the surface of BiOBr nanosheets, but with well-preserved crystal structure and morphology compared with pure counterpart. Bi5+ self-doping BiOBr (BiOBr-4) exhibits distinct photocatalytic mode for dyes degradation, as compared with pure BiOBr nanosheets. These photodegradation distinctions are mainly due to the simultaneous occurrence of two photoinduced hole (h+) mediated oxidation processes on the BiOBr surfaces: (1) a portion of photoexcited h+ participates in the photocatalytic oxidation of dyes, and (2) partial h+ involves the oxidation of Bi3+ to Bi5+. Notably, BiOBr-4 nanosheets comparatively show superior photocatalytic activity for the phenol decomposition as well as the bacterial inactivation. Besides Bi5+ induced narrowed bandgap and enhanced light adsorption capacity, significantly, the oxidative Bi5+ acts as electron traps to promote the photoexcited electron-hole separation and accelerate h+ migration, resulting in the considerable photocatalytic enhancement of BiOBr-4 nanosheets. These novel findings will not only give new insights into the photocatalytic mechanism but also explore new route to enhance photocatalytic performance of Bi-based materials.

  4. Using Diffusion-Reaction Simulation to Study the Formation and Self-Compensation Mechanism of Cu Doping in CdTe

    SciTech Connect

    Guo, D.; Akis, R.; Brinkman, D.; Moore, A.; Yang, Ji-Hui; Krasikov, D.; Sankin, I.; Ringhofer, C.; Vasileska, D.

    2016-11-21

    An improved model of copper p-type doping in CdTe absorbers is proposed that accounts for the mechanisms related to tightly bound Cu(i)-Cu(Cd) and Cd(i)-Cu(Cd) complexes that both limit diffusion and cause self-compensation of Cu species. The new model explains apparent discrepancy between DFT-calculated and fitted diffusion parameters of Cu reported in our previous work, and allows for better understanding of performance and metastabilities in CdTe PV devices.

  5. Enhanced low temperature thermoelectric performance of Ag-doped BiCuSeO

    NASA Astrophysics Data System (ADS)

    Tan, S. G.; Lei, Hechang; Shao, D. F.; Lv, H. Y.; Lu, W. J.; Huang, Y. N.; Liu, Y.; Yuan, B.; Zu, L.; Kan, X. C.; Song, W. H.; Sun, Y. P.

    2014-08-01

    We investigated the physical properties of the silver doped layered oxyselenides BiCu1-xAgxSeO (x = 0-0.4), which crystallize in an unusual intergrowth structure with [Cu2Se2]2- and [Bi2O2]2+ layers. The total thermal conductivity is decreased because the heavier Ag doping in BiCuSeO lattice decreased the lattice thermal conductivity. The undoped BiCuSeO exhibits a semiconducting behavior, and the Ag-doped BiCuSeO performs much improved electrical conductivity. Although Ag-doping causes a decreasing Seebeck coefficient, the significant increase of the electrical conductivity compensates the moderate decrease of the Seebeck coefficient, which leads to the strongly improved power factor values. Finally, the figure of merit is improved and reaches a maximum ˜0.07 at 300 K for the sample BiCu0.7Ag0.3SeO.

  6. Bismuth doping effect on crystal structure and photodegradation activity of Bi-TiO2 nanoparticles

    NASA Astrophysics Data System (ADS)

    Wu, Ming-Chung; Chang, Yin-Hsuan; Lin, Ting-Han

    2017-04-01

    The bismuth precursor is adopted as dopant to synthesize bismuth doped titanium dioxide nanoparticles (Bi-TiO2 NPs) with sol-gel method following by the thermal annealing treatment. We systematically developed a series of Bi-TiO2 NPs at several calcination temperatures and discovered the corresponding crystal structure by varying the bismuth doping concentration. At a certain 650 °C calcination temperature, the crystal structure of bismuth titanate (Bi2Ti2O7) is formed when the bismuth doping concentration is as high as 10.0 mol %. The photocatalytic activity of Bi-TiO2 NPs is increased by varying the doping concentration at the particular calcination temperature. By the definition X-ray diffraction (XRD) structural identification, a phase diagram of Bi-TiO2 NPs in doping concentration versus calcination temperature is provided. It can be useful for further study in the crystal structure engineering and the development of photocatalyst.

  7. Tunable luminescence and enhanced photocatalytic activity for Eu(III) doped Bi2WO6 nanoparticles.

    PubMed

    Gu, Haidong; Yu, Lei; Wang, Juan; Ni, Min; Liu, Tingting; Chen, Feng

    2017-04-15

    A series of Eu(III) doped Bi2WO6 nanoparticles were synthesized by a hydrothermal process. The obtained Bi2WO6:Eu(III) nanoparticles were characterized by XRD, SEM, luminescence spectrophotometer and DRS. The XRD and TEM results indicate that the Eu(III) doping concentration has no influence on the phase and morphology. However, the Eu(III) doping can tune the luminescence and enhance the photocatalytic activity of Bi2WO6. With the increases of Eu(3+) doping concentrations, the emission intensity of WO6(6-) group decreases nut the photocatalytic activity increases. The tunable luminescence of Bi2WO6:Eu(III) nanoparticles results from the energy transfer from WO6(6-) group to Eu(III) ion. The enhanced performance can be ascribed to efficient separation of electron and hole pairs after doping Eu(III) into the Bi2WO6 lattice.

  8. Tunable luminescence and enhanced photocatalytic activity for Eu(III) doped Bi2WO6 nanoparticles

    NASA Astrophysics Data System (ADS)

    Gu, Haidong; Yu, Lei; Wang, Juan; Ni, Min; Liu, Tingting; Chen, Feng

    2017-04-01

    A series of Eu(III) doped Bi2WO6 nanoparticles were synthesized by a hydrothermal process. The obtained Bi2WO6:Eu(III) nanoparticles were characterized by XRD, SEM, luminescence spectrophotometer and DRS. The XRD and TEM results indicate that the Eu(III) doping concentration has no influence on the phase and morphology. However, the Eu(III) doping can tune the luminescence and enhance the photocatalytic activity of Bi2WO6. With the increases of Eu3 + doping concentrations, the emission intensity of WO66 - group decreases nut the photocatalytic activity increases. The tunable luminescence of Bi2WO6:Eu(III) nanoparticles results from the energy transfer from WO66 - group to Eu(III) ion. The enhanced performance can be ascribed to efficient separation of electron and hole pairs after doping Eu(III) into the Bi2WO6 lattice.

  9. One-pot aqueous synthesis of gadolinium doped CdTe quantum dots with dual imaging modalities.

    PubMed

    Jiang, Chunli; Shen, Zhitao; Luo, Chunhua; Lin, Hechun; Huang, Rong; Wang, Yiting; Peng, Hui

    2016-08-01

    A facile one-pot strategy has been developed for the aqueous synthesis of Gd doped CdTe (Gd:CdTe) QDs as fluorescence and magnetic resonance imaging dual-modal agent. The prepared Gd:CdTe QDs showed narrow size distribution and the average size was less than 5nm. The amount of Gd(3+) dopant in Gd:CdTe QDs significantly affected the optical properties of obtained QDs. The highest PL QY for the prepared Gd:CdTe QDs was up to 42.5%. The QDs showed the weak toxicity and significant enhancement in MRI signal. The specific relaxivity value (r1) was determined to be 4.22mM(-1)s(-1). These properties make the prepared Gd:CdTe QDs be an effective dual-modal imaging agent and have great potential applications in biomedical field.

  10. Photoelectrochemical Performance Observed in Mn-Doped BiFeO3 Heterostructured Thin Films

    PubMed Central

    Xu, Hao-Min; Wang, Huanchun; Shi, Ji; Lin, Yuanhua; Nan, Cewen

    2016-01-01

    Pure BiFeO3 and heterostructured BiFeO3/BiFe0.95Mn0.05O3 (5% Mn-doped BiFeO3) thin films have been prepared by a chemical deposition method. The band structures and photosensitive properties of these films have been investigated elaborately. Pure BiFeO3 films showed stable and strong response to photo illumination (open circuit potential kept −0.18 V, short circuit photocurrent density was −0.023 mA·cm−2). By Mn doping, the energy band positions shifted, resulting in a smaller band gap of BiFe0.95Mn0.05O3 layer and an internal field being built in the BiFeO3/BiFe0.95Mn0.05O3 interface. BiFeO3/BiFe0.95Mn0.05O3 and BiFe0.95Mn0.05O3 thin films demonstrated poor photo activity compared with pure BiFeO3 films, which can be explained by the fact that Mn doping brought in a large amount of defects in the BiFe0.95Mn0.05O3 layers, causing higher carrier combination and correspondingly suppressing the photo response, and this negative influence was more considerable than the positive effects provided by the band modulation. PMID:28335343

  11. CdTe devices and method of manufacturing same

    DOEpatents

    Gessert, Timothy A.; Noufi, Rommel; Dhere, Ramesh G.; Albin, David S.; Barnes, Teresa; Burst, James; Duenow, Joel N.; Reese, Matthew

    2015-09-29

    A method of producing polycrystalline CdTe materials and devices that incorporate the polycrystalline CdTe materials are provided. In particular, a method of producing polycrystalline p-doped CdTe thin films for use in CdTe solar cells in which the CdTe thin films possess enhanced acceptor densities and minority carrier lifetimes, resulting in enhanced efficiency of the solar cells containing the CdTe material are provided.

  12. Fabrication of Bi-doped In2O3-ITO nanocomposites and their photoluminescence properties

    NASA Astrophysics Data System (ADS)

    Gil Na, Han; Jung, Taek-Kyun; Lee, Ji-Woon; Hyun, Soong-Keun; Kwon, Yong Jung; Mirzaei, Ali; Kim, Tae-Bum; Shin, Young-Chul; Choi, Ho-Joon; Kim, Hyoun Woo; Jin, Changhyun

    2016-09-01

    For the first time, Bi-doped In2O3-indium tin oxide (ITO) nanocomposites were prepared on Si substrates with the assistance of a Au catalyst through the simple gas-phase transport of a mixture of Bi, In, and Sn powders. The square-shaped Bi-doped In2O3-ITO nanostructures were straight, a few hundreds of nanometres in width, and below a few tens of micrometres in length. Electron microscopy, x-ray diffraction, and energy-dispersive x-ray spectroscopy analyses indicated that the Bi-doped In2O3-ITO nanorods were single crystals with a basis of cubic In2O3 structures. The photoluminescence spectra revealed that the Bi-doped In2O3-ITO nanorods had a strong orange emission band centred at approximately 626 nm without any shoulder bands. The enhancement of orange emission might be due to the oxygen deficiencies of structural defects in the nanorods.

  13. Engineering Topological Surface State of Cr-doped Bi2Se3 under external electric field

    NASA Astrophysics Data System (ADS)

    Zhang, Jian-Min; Lian, Ruqian; Yang, Yanmin; Xu, Guigui; Zhong, Kehua; Huang, Zhigao

    2017-03-01

    External electric field control of topological surface states (SSs) is significant for the next generation of condensed matter research and topological quantum devices. Here, we present a first-principles study of the SSs in the magnetic topological insulator (MTI) Cr-doped Bi2Se3 under external electric field. The charge transfer, electric potential, band structure and magnetism of the pure and Cr doped Bi2Se3 film have been investigated. It is found that the competition between charge transfer and spin-orbit coupling (SOC) will lead to an electrically tunable band gap in Bi2Se3 film under external electric field. As Cr atom doped, the charge transfer of Bi2Se3 film under external electric field obviously decreases. Remarkably, the band gap of Cr doped Bi2Se3 film can be greatly engineered by the external electric field due to its special band structure. Furthermore, magnetic coupling of Cr-doped Bi2Se3 could be even mediated via the control of electric field. It is demonstrated that external electric field plays an important role on the electronic and magnetic properties of Cr-doped Bi2Se3 film. Our results may promote the development of electronic and spintronic applications of magnetic topological insulator.

  14. Multiferroic, magnetoelectric and optical properties of Mn doped BiFeO3 nanoparticles

    NASA Astrophysics Data System (ADS)

    Chauhan, Sunil; Kumar, Manoj; Chhoker, Sandeep; Katyal, S. C.; Singh, Hemant; Jewariya, Mukesh; Yadav, K. L.

    2012-03-01

    Mn doped BiFeO3 (5, 10 and 15 mol%) nanoparticles were synthesized using sol-gel technique. The influence of Mn doping on structural, dielectric, magnetic, magnetoelectric and optical properties of BiFeO3 was studied. Rietveld refinement of XRD patterns showed rhombohedral to orthorhombic phase transition for 15 mol% Mn doped BiFeO3 sample. Magnetic measurements revealed the enhancement of ferromagnetic property with increasing Mn doping in BiFeO3. The characteristic dielectric anomaly, expected in the vicinity of antiferromagnetic transition temperature TN (Neel temperature) was found in all Mn doped BiFeO3 samples. The magnetoelectric coupling was evidenced by the change in capacitance with the change in the applied magnetic field. On increasing Mn concentration from 5 to 15 mol% in BiFeO3, a change in magnetocapacitance from 1.46% to 2.6% showed the improvement of multiferroic properties. In order to explore the optical properties of Mn doped BiFeO3 nanoparticles, their photoluminescent properties were also investigated.

  15. Enhanced electrochemiluminescence quenching of CdS:Mn nanocrystals by CdTe QDs-doped silica nanoparticles for ultrasensitive detection of thrombin

    NASA Astrophysics Data System (ADS)

    Shan, Yun; Xu, Jing-Juan; Chen, Hong-Yuan

    2011-07-01

    This work reports an aptasensor for ultrasensitive detection of thrombin based on remarkably efficient energy-transfer induced electrochemiluminescence (ECL) quenching from CdS:Mn nanocrystals (NCs) film to CdTe QDs-doped silica nanoparticles (CdTe/SiO2 NPs). CdTe/SiO2 NPs were synthesized via the Stöber method and showed black bodies' strong absorption in a wide spectral range without excitonic emission, which made them excellent ECL quenchers. Within the effective distance of energy scavenging, the ECL quenching efficiency was dependent on the number of CdTe QDs doped into the silica NPs. Using ca. 200 CdTe QDs doped silica NPs on average of 40 nm in diameter as ECL quenching labels, attomolar detection of thrombin was successfully realized. The protein detection involves a competition binding event, based on thrombin replacing CdTe/SiO2 NPs labeled probing DNA which is hybridized with capturing aptamer immobilized on a CdS:Mn NCs film modified glassy carbon electrode surface by specific aptamer-protein affinity interactions. It results in the displacement of ECL quenching labels from CdS:Mn NCs film and concomitant ECL signal recovery. Owing to the high-content CdTe QDs in silica NP, the increment of ECL intensity (ΔIECL) and the concentration of thrombin showed a double logarithmic linear correlation in the range of 5.0 aM~5.0 fM with a detection limit of 1aM. And, the aptasensor hardly responded to antibody, bovine serum albumin (BSA), haemoglobin (Hb) and lysozyme, showing good detection selectivity for thrombin. This long-distance energy scavenging could have a promising application perspective in the detection of biological recognition events on a molecular level.This work reports an aptasensor for ultrasensitive detection of thrombin based on remarkably efficient energy-transfer induced electrochemiluminescence (ECL) quenching from CdS:Mn nanocrystals (NCs) film to CdTe QDs-doped silica nanoparticles (CdTe/SiO2 NPs). CdTe/SiO2 NPs were synthesized via

  16. Influence of Zn2+ doping on the crystal structure and optical-electrical properties of CdTe thin films

    NASA Astrophysics Data System (ADS)

    Kavitha, R.; Sakthivel, K.

    2015-10-01

    The present study reports the synthesis of Cd1-xZnxTe (x = 0, 0.025, 0.050, 0.075 and 0.100) nanocrystalline thin film through a simple two step method. In the first step fine nanoparticles of Cd1-xZnxTe was prepared by solvothermal microwave irradiation (SMI) technique and then deposited as thin film using dip-coating technique. X-ray diffraction study showed that films are polycrystalline with cubic phase, which are preferentially oriented along the (1 1 1) direction. No impurity phase was observed in the XRD pattern even after higher concentration of doping (x = 0.100) of Zn. FESEM study revealed that the films are homogeneous without cracks and pinholes. TEM micrographs revealed the particles are slightly agglomerated and lesser than 25 nm. The optical absorption study revealed that pure and doped CdTe films possess a direct band gap material with bandgap values between 2.39 and 2.63 eV (±0.02 eV). The values of optical bandgap increase with an increase in dopant (Zn) concentration from x = 0.025 to 0.10. The pure cadmium telluride (CdTe) nanocrystalline film shows a strong green emission peak centered at about 525 nm. The emission peaks of Cd1-xZnxTe nanocrystalline films are red shifted from 525 nm to 611 nm according to the dopant (Zn2+) concentration. The grains in the prepared films are uniformly distributed, which was confirmed by narrow full width at half maximum (FWHM) of the emission peaks (40-65 nm). The DC conductivity has increased by 1.25 and 4 orders as the concentration of dopant increases from x = 0.025 to 0.10 at room temperature (30 °C) and 150 °C respectively. The higher conductivity value is underpinned by the smaller activation energy value and is explained by thermionic emission mechanism.

  17. Multi-role of Sodium Doping in BiCuSeO on High Thermoelectric Performance

    NASA Astrophysics Data System (ADS)

    Zhang, Mingyang; Yang, Junyou; Jiang, Qinghui; Fu, Liangwei; Xiao, Ye; Luo, Yubo; Zhang, Dan; Cheng, Yudong; Zhou, Zhiwei

    2015-08-01

    In this work, Na-doped BiCuSeO thermoelectric materials have been prepared and the effect of Na doping on their microstructure and thermoelectric properties has been studied. When the doping content is less than 6%, all Na+ can dissolve into the matrix and substitute for Bi3+ sites and play a role of acceptor; when the content is above 6%, the substitution saturates and excessive doping results in the formation of Na2CO3 and Na2SeO3 secondary phases. On the one hand, the doping of Na+ for Bi3+ can significantly improve the electrical properties due to the significant increase of carrier concentration. Furthermore, the phonon and total thermal conductivity also decrease with Na doping because of the dual phonon scattering by the point defects and secondary phases both resulting from Na+ doping. As a result, the thermoelectric performance is enhanced, and a maximum ZT value of 0.97, which is approximately triple that of the undoped BiCuSeO, is achieved at 873 K for the Bi0.92Na0.08CuSeO sample.

  18. Origin of broad NIR photoluminescence in bismuthate glass and Bi-doped glasses at room temperature.

    PubMed

    Peng, Mingying; Zollfrank, Cordt; Wondraczek, Lothar

    2009-07-15

    Bi-doped glasses with broadband photoluminescence in the near-infrared (NIR) spectral range are presently receiving significant consideration for potential applications in telecommunications, widely tunable fiber lasers and spectral converters. However, the origin of NIR emission remains disputed. Here, we report on NIR absorption and emission properties of bismuthate glass and their dependence on the melting temperature. Results clarify that NIR emission occurs from the same centers as it does in Bi-doped glasses. The dependence of absorption and NIR emission of bismuthate glasses on the melting temperature is interpreted as thermal dissociation of Bi(2)O(3) into elementary Bi. Darkening of bismuthate glass melted at 1300 °C is due to the agglomeration of Bi atoms. The presence of Bi nanoparticles is confirmed by transmission electron microscopy, high-resolution energy dispersive x-ray spectroscopy and element distribution mapping. By adding antimony oxide as an oxidation agent to the glass, NIR emission centers can be eliminated and Bi(3+) is formed. By comparing with atomic spectral data, absorption bands at ∼320 , ∼500 , 700 , 800 and 1000 nm observed in Bi-doped glasses are assigned to Bi(0) transitions [Formula: see text], [Formula: see text], [Formula: see text], [Formula: see text] and [Formula: see text], respectively, and broadband NIR emission is assigned to the transition [Formula: see text].

  19. Orbital bi-stripes in highly doped bilayer manganites

    SciTech Connect

    Beale, T.A.W.; Spencer, P.D.; Hatton, P.D.; Wilkins, S.B.; Zimmermann, M. von; Brown, S.D.; Prabhakaran, D.; Boothroyd, A.T.

    2005-08-01

    We present high-resolution high-energy and resonant x-ray-diffraction results from La{sub 2-2x}Sr{sub 1+2x}Mn{sub 2}O{sub 7} for x=0.55, 0.575, and 0.60. These compounds show superlattice reflections at wave vectors of (h{+-}{delta},k{+-}{delta},l) and (h{+-}2{delta},k{+-}2{delta},l), arising from orbital ordering with associated Jahn-Teller distortions and charge ordering, respectively. We observe a phase transition boundary between the x=0.55 and x=0.575 doping levels. Samples with x=0.55 display structural characteristics similar to those previously reported for x=0.5. Compared to this the long-range order in samples with x=0.55 and x=0.6 have a distinct change in wave-vector and correlation length. We attribute this to a new orbital bi-stripe phase, accompanied by weak, frustrated, charge ordering. The observed azimuthal dependence of the orbital order reflection supports the model proposed for this new phase.

  20. Electrical and Thermal Transport Behavior in Zn-Doped BiCuSeO Oxyselenides

    NASA Astrophysics Data System (ADS)

    Ren, Guangkun; Butt, Sajid; Zeng, Chengcheng; Liu, Yaochun; Zhan, Bin; Lan, Jinle; Lin, Yuanhua; Nan, Cewen

    2015-06-01

    Oxide-based thermoelectric materials such as BiCuSeO have been researched for several years to optimize their thermoelectric performance. In this article, we present a series of Zn-doped BiCuSeO ceramics produced by fine processing. The results indicate that Zn doping can effectively increase the power factor through Cu vacancies along with a suppressed thermal conductivity through increased phonon scattering at ZnSe impurity phase. Consequently, a higher ZT value of 0.65 at 873 K is obtained for 10% Zn doping, being about three times larger than that of the pure sample.

  1. Fluorine doping effects on the magnetic and electric properties of BiFeO3

    NASA Astrophysics Data System (ADS)

    Hu, Y. C.; Jiang, Z. Z.; Gao, K. G.; Cheng, G. F.; Ge, J. J.; Lv, X. M.; Wu, X. S.

    2012-05-01

    Electron-doping introduced fluorine (F) replacement of the oxygen in BiFeO3 (BFO) can be compensated by the valence change of iron from Fe3+ to Fe2+. We successfully incorporate F in BFO by sol-gel method. F-doping is found to significantly enhance the ferromagnetism up to nearly two order for x = 0.25 compared with x = 0. This study provides direct evidence that the multiferroic characteristics of BiFeO3 are sensitive to the anion doping, such as F, providing a convenient alternative to manipulate the magnetization and electric polarization in multiferroic oxides.

  2. Thermoelectric Properties of Cl-Doped BiCuSeO Oxyselenides

    NASA Astrophysics Data System (ADS)

    Zhou, Zhifang; Tan, Xing; Ren, Guangkun; Lin, Yuanhua; Nan, Cewen

    2016-11-01

    BiCuSeO oxyselenide has been reported as a promising thermoelectric material because of its special layered structure. Here, we attempt to synthesize n-type BiCuSeO using chlorine to substitute the Se site with the modification of (Cu2Se2)2- layers. Our results indicate that Cl doping can influence the electrical and thermal transport properties of BiCuSeO bulk materials. The significant reduction in electrical conductivity (from 40 S cm-1 to 10 S cm-1) demonstrates that Cl doping can indeed affect (Cu2Se2)2- conducting layers. It may be desirable to obtain n-type BiCuSeO by heavy doping of Cl or other elements.

  3. Preparation of tungsten-doped BiVO4 and enhanced photocatalytic activity

    NASA Astrophysics Data System (ADS)

    Shan, Lianwei; Liu, Hongguang; Wang, Guilin

    2015-04-01

    W-doped BiVO4 samples have been successfully synthesized by a simple sol-gel technique, which involved the formation process of precursor and the subsequent calcination treatment. The incorporation of W ions into BiVO4 was detected by X-ray diffraction. Through X-ray photoelectron spectroscopy (XPS) and defect reactions, the tungstic ions should be responsible for the enhancement of decolorization due to reducing the consumption of photogenerated electrons. Also, the XPS signal of O 1 s was investigated, indicating that doped W species greatly improve the hydroxyl and H2O adsorption on the surface of W-doped BiVO4. In addition, the photoluminescence experiments indicate the enhanced separation of electron-hole pairs in comparison with pure BiVO4.

  4. Synthesis and photoactivity enhancement of Ba doped Bi{sub 2}WO{sub 6} photocatalyst

    SciTech Connect

    Li, Wen Ting; Huang, Wan Zhen; Zhou, Huan; Yin, Hao Yong; Zheng, Yi Fan; Song, Xu Chun

    2015-04-15

    Highlights: • The Ba-doped Bi{sub 2}WO{sub 6} photocatalyst have been synthesized by a hydrothermal route. • The photocatalytic activity of Bi{sub 2}WO{sub 6} was greatly enhanced by Ba-doping. • The effect of Ba on the catalytic activity of Bi{sub 2}WO{sub 6} was studied and discussed. - Abstract: In this study, Bi{sub 2}WO{sub 6} doped with different barium contents were successfully prepared by a simple hydrothermal route at 180 °C for 12 h. The as-synthesized samples were characterized in detailed by X-ray powder diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), UV–vis diffusere flectance spectroscopy (UV–vis DRS) and Brunauer–Emmet–Teller (BET) theory. Their photocatalytic activities were evaluated by photodegradation of Rhodamine B (RhB) under simulated solar light. As a result, the photocatalytic properties were enhanced after Ba doping and the Ba-doped Bi{sub 2}WO{sub 6} with R{sub Ba} = 0.15 showed the highest photocatalytic activities of 96.3% RhB was decomposed in 50 min. Close investigation revealed that the proper Ba doped into Bi{sub 2}WO{sub 6} could not only increases its BET surface area, decrease its crystalline size, but also act as electron traps and facilitate the separation of photogenerated electron–hole pairs. The mechanism of enhanced photocatalytic activities of Ba-doped Bi{sub 2}WO{sub 6} were further investigated.

  5. Fabrication of Cu-Doped Bi2Te3 Nanoplates and Their Thermoelectric Properties

    NASA Astrophysics Data System (ADS)

    Liu, Shuai; Peng, Nan; Bai, Yu; Ma, Dayan; Ma, Fei; Xu, Kewei

    2016-09-01

    Cu-doped Bi2Te3 hexagonal nanoplates were fabricated by a simple solvothermal method. Scanning electron microscopy and transmission electron microscopy characterization illustrated that the nanoplates are single-crystal ones with an average width of 300 nm and thickness in the range of 20-30 nm. It was demonstrated that Cu x Bi2Te3 nanoplates possess the lowest thermal conductivity (0.8-1.2 W/m K) at 300 K, which is mainly due to the enhanced phonon scattering by grain boundaries. Furthermore, the doped Cu could evidently enhance the power factor of Bi2Te3 through optimizing the carrier transport properties. As a result, Cu0.02Bi2Te3 nanoplates exhibit the best thermoelectric performance with a figure of merit of 0.33, which is more than two times higher than that of Bi2Te3 nanoplates.

  6. Modification of surface chemistry by lattice Sn doping in BiFeO3 nanofibers

    NASA Astrophysics Data System (ADS)

    Sobhan, M.; Xu, Q.; Zhao, J.; Franklin, A.; Hu, Y.; Tse, J. S.; Wu, P.

    2015-07-01

    Results on X-ray near edge structure (XANES) study on Sn-doped BiFeO3 (BFO) nanofibers with varying Sn concentrations of 1%, 3%, and 5% are reported. The results indicate that the oxidation state of Sn ions in the BFO structure is +4. In addition, we observe a bismuth peak (Bi M 1) at 4000 eV in the XANES spectrum, suggesting the diffusion of Bi ions onto the surface of BFO nanostructure. The diffusion is attributed to the charge compensation between donor electrons from the Sn atoms and Bi vacancies. These findings are of high relevance to surface chemistry reactions in sensing and catalytic applications.

  7. Enhanced photocatalytic activity of cadmium-doped Bi2WO6 nanoparticles under simulated solar light

    NASA Astrophysics Data System (ADS)

    Song, Xu Chun; Li, Wen Ting; Huang, Wan Zhen; Zhou, Huan; Yin, Hao Yong; Zheng, Yi Fan

    2015-03-01

    Novel cadmium-doped Bi2WO6 nanoparticles with different Cd contents have been synthesized by a one-step route using ethylene glycol and water as solvents at 180 °C for 12 h. The as-synthesized samples were characterized in detailed by SEM, XRD, EDS, HRTEM, UV-Vis DRS, BET techniques, and so on. The results shown that with the increase of the Cd2+ addition, the crystal structure, lattice space, and absorption edge were not significantly changed and the calculated band gap value was 2.58 eV. However, the flower-like Bi2WO6 sphere was gradually destroyed. Simultaneously, the surface area and photocurrent responses of the catalysts were greatly increased. Photocatalytic activity of the Cd-doped Bi2WO6 samples was determined by monitoring the change of RhB concentration under simulated solar light. The results revealed that cadmium doping greatly improved the photocatalytic efficiency of Bi2WO6. The Bi2WO6 sample with R Cd = 0.05 displayed the highest photocatalytic activity, and the degradation rate is about two times greater than pure Bi2WO6. Moreover, the Cd-Bi2WO6 photocatalyst remained stable even after five consecutive cycles. A possible mechanism of photocatalytic activity enhancement on basis of the experimental results was proposed.

  8. Rotational Symmetry Breaking in a Trigonal Superconductor Nb-doped Bi2 Se3

    NASA Astrophysics Data System (ADS)

    Asaba, Tomoya; Lawson, B. J.; Tinsman, Colin; Chen, Lu; Corbae, Paul; Li, Gang; Qiu, Y.; Hor, Y. S.; Fu, Liang; Li, Lu

    2017-01-01

    The search for unconventional superconductivity has been focused on materials with strong spin-orbit coupling and unique crystal lattices. Doped bismuth selenide (Bi2 Se3 ) is a strong candidate, given the topological insulator nature of the parent compound and its triangular lattice. The coupling between the physical properties in the superconducting state and its underlying crystal symmetry is a crucial test for unconventional superconductivity. In this paper, we report direct evidence that the superconducting magnetic response couples strongly to the underlying trigonal crystal symmetry in the recently discovered superconductor with trigonal crystal structure, niobium (Nb)-doped Bi2 Se3 . As a result, the in-plane magnetic torque signal vanishes every 60°. More importantly, the superconducting hysteresis loop amplitude is enhanced along one preferred direction, spontaneously breaking the rotational symmetry. This observation indicates the presence of nematic order in the superconducting ground state of Nb-doped Bi2 Se3 .

  9. First-principles study of magnetic properties in Co-doped BiFeO3

    NASA Astrophysics Data System (ADS)

    Rong, Qing-Yan; Wang, Ling-Ling; Xiao, Wen-Zhi; Xu, Liang

    2015-01-01

    The electronic, structural, and magnetic properties of the perovskite Co-doped BiFeO3 have been investigated using density functional theory within the generalized gradient approximation plus Hubbard U correction (GGA+U). We discuss the changes that occur in the structural parameters, electronic structure, and magnetic properties of the Co-doped BiFeO3 under the consideration of the impact of the 3d electrons. The results show that a substitutional Co for Fe in BiFeO3 produces a magnetic moment of -1.0 μB and a half-metallic property emerges. The ferromagnetic (FM) coupling is more stable and still presents a half-metallic property when two Co atoms substitute for Fe atoms in BiFeO3.

  10. Effects of doping on transport properties in Cu-Bi-Se-based thermoelectric materials.

    PubMed

    Hwang, Jae-Yeol; Mun, Hyeon A; Kim, Sang Il; Lee, Ki Moon; Kim, Jungeun; Lee, Kyu Hyoung; Kim, Sung Wng

    2014-12-15

    The thermoelectric properties of Zn-, In-, and I-doped Cu1.7Bi4.7Se8 pavonite homologues were investigated in the temperature range from 300 to 560 K. On the basis of the comprehensive structural analysis using Rietveld refinement of synchrotron radiation diffraction for Cu(x+y)Bi(5-y)Se8 compounds with the inherently disordered crystallographic sites, we demonstrate a doping strategy that provides a simultaneous control for enhanced electronic transport properties by the optimization of carrier concentration and exceptionally low lattice thermal conductivity by the formation of point defects. Substituted Zn or In ions on Cu site was found to be an effective phonon scattering center as well as an electron donor, while doping on Bi site showed a moderate effect for phonon scattering. In addition, we achieved largely enhanced power factor in small amount of In doping on Cu site by increased electrical conductivity and moderately decreased Seebeck coefficient. Coupled with a low lattice thermal conductivity originated from intensified point defect phonon scattering by substituted In ions with host Cu ions, a thermoelectric figure of merit ZT of 0.24 at 560 K for Cu1.6915In0.0085Bi4.7Se8 was achieved, yielding 30% enhancement compared with that of a pristine Cu1.7Bi4.7Se8 at the same temperature.

  11. Effect of Co doping on structural, optical, magnetic and dielectric properties of Bi2Fe4O9

    NASA Astrophysics Data System (ADS)

    Mohapatra, S. R.; Sahu, B.; Kaushik, S. D.; Singh, A. K.

    2015-06-01

    Polycrystalline Bi2Fe4O9 and 2% Co doped Bi2Fe4O9 were prepared by solid state reaction route. X-ray diffraction (XRD) result reveals that there is no change in the crystal structure due to Co doping and the compound has orthorhombic structure. UV-visible spectroscopy confirms the decrease in band gap due Co doping. Zero field cooled magnetization measurement at 100 Oe magnetic field shows substantial decrease in the magnetic transition temperature. Room temperature frequency dependent dielectric permittivity at 1V DC bias shows ˜10% increase in Co doped sample with respect to pure Bi2Fe4O9.

  12. Correlation effects and phonon modes softening with doping in Ba₁-xKxBiO₃.

    PubMed

    Korotin, Dm M; Novoselov, D; Anisimov, V I

    2014-05-14

    The monoclinic crystal structure of the undoped BaBiO₃ can be described as a cubic perovskite which is distorted by the frozen breathing and tilting phonon modes of the BiO₆ octahedra. The phonon mode softening is experimentally observed (Braden et al 1996 Europhys. Lett. 34 531) in Ba₁-xKxBiO₃ through potassium doping followed by a transition into an ideal cubic perovskite structure at x = 0.37, close to the emergence of superconductivity. In our previous paper (Korotin et al 2012 J. Phys.: Condens. Matter 24 415603) we demonstrated that it is necessary to take into account correlation effects using the DFT+U method in Wannier functions as a basis to obtain a good agreement between the calculated and experimental values of crystal structure distortion and the energy gap in BaBiO₃. In the present work, using the same method, we calculated the breathing mode phonon frequencies as a function of the potassium doping level in Ba₁-xKxBiO₃. The obtained frequencies are in good agreement with experimental values and the breathing mode softening with doping is reproduced, contrary to calculations made without consideration of correlation effects. We show that the cubic crystal structure becomes stable at x = 0.30 in agreement with the experimental transition to cubic perovskite at x = 0.37. The possible connections between the correlation effects, phonon mode softening and superconductivity in Ba₁-xKxBiO₃ are discussed.

  13. Microemulsion synthesis, characterization of highly visible light responsive rare earth-doped Bi2O3.

    PubMed

    Wu, Shuxing; Fang, Jianzhang; Xu, Xiaoxin; Liu, Zhang; Zhu, Ximiao; Xu, Weicheng

    2012-01-01

    In this paper, Bi(2)O(3) and rare earth (La, Ce)-doped Bi(2)O(3) visible-light-driven photocatalysts were prepared in a Triton X-100/n-hexanol/cyclohexane/water reverse microemulsion. The resulting materials were characterized by X-ray powder diffraction (XRD), transmission electron microscopy (TEM), Brunauer-Emmett-Teller (BET) surface area, photoluminescence spectra (PLS) and UV-Vis diffuse reflectance spectroscopy. The XRD patterns of the as-prepared catalysts calcined at 500 °C exhibited only the characteristic peaks of monoclinic α-Bi(2)O(3). PLS analysis implied that the separation efficiency for electron-hole has been enhanced when Bi(2)O(3) was doped with rare earth. UV-Vis diffuse reflectance spectroscopy measurements presented an extension of light absorption into the visible region. The photocatalytic activity of the samples was evaluated by degradation of methyl orange (MO) and 2,4-dichlorophenol (2,4-DCP). The results displayed that the photocatalytic activity of rare earth-doped Bi(2)O(3) was higher than that of dopant-free Bi(2)O(3). The optimal dopant amount of La or Ce was 1.0 mol%. And the mechanisms of influence on the photocatalytic activity of the catalysts were discussed.

  14. Enhanced multiferroic properties in scandium doped Bi2Fe4O9

    NASA Astrophysics Data System (ADS)

    Dutta, Dimple P.; Tyagi, A. K.

    2013-02-01

    Undoped and Sc3+ doped Bi2Fe4O9 nanoparticles have been synthesized using sonochemical method. The phase purity of the samples was checked using powder X-rau diffraction technique. EDS analysis was done to confirm the extent of Sc3+ doping in the samples. The size and morphology of the nanoparticles have been analyzed using transmission electron microscopy (TEM). The Bi2Fe4O9 nanoparticles show a weak ferromagnetic behavior at room temperature, which is quite different from the linear M-H relationship reported for bulk Bi2Fe4O9. This is mainly attributed to the uncompensated moments at the disordered particle surface resulting from the reduced coordination of the surface spins, arising due to lattice strain or oxygen deficiency. Addition of Sc3+ dopant in varying concentrations in these Bi2Fe4O9 nanoparticles, improves their magnetic as well as ferroelectric properties. The leakage current is considerably reduced and electric polarization increases significantly in case of Bi2Fe4(1-x)ScxO9(x = 0.1) nanoparticles. Hence it can be inferred that Sc3+ doped Bi2Fe4O9 nanoparticles shows promise as good multiferroic materials.

  15. Origin of broad NIR photoluminescence in bismuthate glass and Bi-doped glasses at room temperature

    NASA Astrophysics Data System (ADS)

    Peng, Mingying; Zollfrank, Cordt; Wondraczek, Lothar

    2009-07-01

    Bi-doped glasses with broadband photoluminescence in the near-infrared (NIR) spectral range are presently receiving significant consideration for potential applications in telecommunications, widely tunable fiber lasers and spectral converters. However, the origin of NIR emission remains disputed. Here, we report on NIR absorption and emission properties of bismuthate glass and their dependence on the melting temperature. Results clarify that NIR emission occurs from the same centers as it does in Bi-doped glasses. The dependence of absorption and NIR emission of bismuthate glasses on the melting temperature is interpreted as thermal dissociation of Bi2O3 into elementary Bi. Darkening of bismuthate glass melted at 1300 °C is due to the agglomeration of Bi atoms. The presence of Bi nanoparticles is confirmed by transmission electron microscopy, high-resolution energy dispersive x-ray spectroscopy and element distribution mapping. By adding antimony oxide as an oxidation agent to the glass, NIR emission centers can be eliminated and Bi3+ is formed. By comparing with atomic spectral data, absorption bands at ~320 , ~500 , 700 , 800 and 1000 nm observed in Bi-doped glasses are assigned to Bi0 transitions {}^{4}\\mathrm {S_{3/2}} \\to {}^{2}\\mathrm {P_{3/2}} , {}^{4}\\mathrm {S_{3/2}}\\to {}^{2}\\mathrm {P_{1/2}} , {}^{4}\\mathrm {S_{3/2}}\\to {}^{2}\\mathrm {D_{5/2}} , {}^{4}\\mathrm {S_{3/2}}\\to {}^{2}\\mathrm {D_{3/2}}(2) and {}^{4}\\mathrm {S_{3/2}}\\to {}^{2}\\mathrm {D_{3/2 }}(1) , respectively, and broadband NIR emission is assigned to the transition {}^{2}\\mathrm {D_{3/2}(1)}\\to {}^{4}\\mathrm {S_{3/2}} .

  16. Structural determination of Bi-doped magnetite multifunctional nanoparticles for contrast imaging.

    PubMed

    Laguna-Marco, M A; Piquer, C; Roca, A G; Boada, R; Andrés-Vergés, M; Veintemillas-Verdaguer, S; Serna, C J; Iadecola, A; Chaboy, J

    2014-09-14

    To determine with precision how Bi atoms are distributed in Bi-doped iron oxide nanoparticles their structural characterization has been carried out by X-ray absorption spectroscopy (XAS) recorded at the K edge of Fe and at the L3 edge of Bi. The inorganic nanoparticles are nominally hybrid structures integrating an iron oxide core and a bismuth oxide shell. Fe K-edge XAS indicates the formation of a structurally ordered, non-stoichiometric magnetite (Fe3-δO4) phase for all the nanoparticles. The XAS spectra show that, in the samples synthesized by precipitation in aqueous media and laser pyrolysis, the Bi atoms neither enter into the iron oxide spinel lattice nor form any other mixed Bi-Fe oxides. No modification of the local structure around the Fe atoms induced by the Bi atoms is observed at the Fe K edge. In addition, contrary to expectations, our results indicate that the Bi atoms do not form a well-defined Bi oxide structure. The XAS study at the Bi L3 edge indicates that the environment around Bi atoms is highly disordered and only a first oxygen coordination shell is observed. Indefinite [BiO6-x(OH)x] units (isolated or aggregated forming tiny amorphous clusters) bonded through hydroxyl bridges to the nanoparticle, rather than a well defined Bi2O3 shell, surround the nanoparticle. On the other hand, the XAS study indicates that, in the samples synthesized by thermal decomposition, the Bi atoms are embedded in a longer range ordered structure showing the first and second neighbors.

  17. Enhanced photocatalytic property of BiFeO3/N-doped graphene composites and mechanism insight

    NASA Astrophysics Data System (ADS)

    Li, Pai; Li, Lei; Xu, Maji; Chen, Qiang; He, Yunbin

    2017-02-01

    A series of BiFeO3/(N-doped) graphene composites are prepared by a facile hydrothermal method. BiFeO3/N-doped graphene shows photocatalytic performance superior to that of BiFeO3/graphene and pristine BiFeO3. The enhanced photo-degradation performance of BiFeO3/N-doped graphene are mainly attributable to the improved light absorbance of the composite, abundant active adsorption sites and high electrical charge mobility of N-doped graphene, and the downward band bending of BiFeO3 at the composite interface. In particular, X-ray photoelectron spectroscopy analyses reveal that the electron energy band of BiFeO3 is downward bent by 1.0 eV at the interface of BiFeO3/N-doped graphene, because of different work functions of both materials. This downward band bending facilitates the transfer of photogenerated electrons from BiFeO3 to N-doped graphene and prompts the separation of photo-generated electron-hole pairs, leading eventually to the enhanced photocatalytic performance.

  18. Some Experiments on Flux Pinning in Pb Doped Bi-Sr-Ca-Cu-O System

    NASA Astrophysics Data System (ADS)

    Nagashima, Toshio; Watanabe, Kenji; Watahiki, Masaya; Fukai, Yuh

    1989-02-01

    In order to investigate the mechanism of energy dissipation by irreversible motion of fluxoids, we performed two different types of experiments; the oscillating-pendulum in magnetic field and the magnetic hysteresis including both major and minor loops. Results obtained for Pb-doped Bi-Sr-Ca-Cu-O system at 77 K are presented and some preliminary discussions are made.

  19. Transport properties of hole-doped CuBiS$_{2}$

    SciTech Connect

    Parker, David S; Singh, David J

    2011-01-01

    We present the results of density-functional theory and Boltzmann transport calculations suggesting that hole-doped CuBiS$_{2}$ - a material commonly available as a mineral and comprised of relatively inexpensive elements - may show good thermoelectric performance at ambient temperature.

  20. Semiconducting ferroelectric perovskites with intermediate bands via B-site Bi5+ doping

    NASA Astrophysics Data System (ADS)

    Jiang, Lai; Grinberg, Ilya; Wang, Fenggong; Young, Steve M.; Davies, Peter K.; Rappe, Andrew M.

    2014-08-01

    We propose B-site Bi5+-doped ferroelectric perovskite materials as suitable candidates for the bulk photovoltaic effect and related solar applications. The low-lying 6s empty states of the electronegative Bi atom produce empty bands in the energy gap of the parent materials, effectively lowering the band gap by 1-2 eV, depending on the composition of the ferroelectric end member and the concentration of Bi5+ in the solid solution. The polarization decreases but survives upon doping, which enables the "shift-current" mechanism for photocurrent generation, while the decreased band gap allows absorption of much of the visible spectrum. The magnitude of shift-current response is calculated for 0.75Pb2InNbO6-0.25Ba2InBiO6 (PIN-BIB) and 0.75Pb2ScNbO6-0.25Ba2ScNbO6 (PSN-BSB) and is predicted to exceed the visible-light bulk photovoltaic response of all previously reported materials, including BiFeO3. Furthermore, the existence of their intermediate bands and multiple band gaps, combined with Fermi-level tuning by A-site co-doping, also allows for their potential application in traditional p -n junction-based solar cells as broad-spectrum photoabsorbers.

  1. Effect of Si doping on photoelectrocatalytic decomposition of phenol of BiVO4 film under visible light.

    PubMed

    Zhang, Xiufang; Quan, Xie; Chen, Shuo; Zhang, Yaobin

    2010-05-15

    The silicon-doped BiVO(4) film was fabricated by modified metalorganic decomposition (MOD) method. XRD analysis indicated that the crystal size of the BiVO(4) film was decreased from 32.4nm to 23.9nm by doping Si. The measurements of FT-IR spectra and the water contact angle showed that doping Si could elevate the surface hydrophilicity of the BiVO(4) film. The phenol elimination rate on the Si-doped BiVO(4) film electrode in the photoelectrocatalytic process was 1.84 times as great as that on the BiVO(4) film electrode. The enhanced photoelectrocatalytic performance was attributed to the decrease of the crystalline size and the enhancement of the hydrophilic performance.

  2. High Pressure XANES studies on Mn dopeHigh Pressure XANES studies on Mn doped Bi2 Te3

    NASA Astrophysics Data System (ADS)

    Light, Brian; Kumar, Ravhi; Baker, Jason; Dharmalingam, Prabhakaran; Park, Changyong; Unlv Team; Hpcat; Carnegie Institute Of Washington Collaboration

    Bi2Te3, Bi2Se3, and Sb2Te3 are narrow band-gap semiconductors have been extensively studied along with their alloys due to their promising technological applications as thermoelectric materials. More recently pressure induced superconductivity and structural transition have been observed in these materials around 7 GPa [1, 2]. Here we have performed high pressure x-ray near edge spectroscopy (XANES) measurements at Bi L-III edge on Mn (0.1) doped Bi2Te3 samples to understand the variation of the Bi valence across the pressure induced superconductivity regime. We have inferred notable changes in the Bi valence at high pressure conditions. The results will be discussed in detail. Work at the University of Nevada Las Vegas (ALC) is funded by U.S. Department of Energy Award DE-SC0001928. Portions of this work were performed at HPCAT (Sector 16), Advanced Photon Source (APS), Argonne National Laboratory. HPCAT is supported by DOE-BES, DOE-NNSA, NSF, and the W.M. Keck Foundation. APS is supported by DOE-BES, under Contract No. DE-AC02-06CH1135.

  3. Top-seeded solution growth of Bi 12TiO 20 single crystals doped with P

    NASA Astrophysics Data System (ADS)

    Miyazawa, Shintaro

    1996-10-01

    P-doped, [001]-oriented sillenite Bi 12TiO 20 single crystals are grown by top-seeded solution growth from BiPO 4-Bi 2O 3-Bi 12TiO 20 solutions with a newly developed double-crucible configuration. P-doping resulted in clear crystal habit/facet modifications in the growth modes of Bi 12TiO 20 in which [lcub]100[rcub] facets became predominant. Chemical analysis of the crystals showed that P substitutes Ti sites, allowing Bi 12(Ti 1 - xP x)O 20 solid-solution, but the solubility of P seemed to limit up to 75% of Ti. P-doping resulted in a bleaching of the optical absorption shoulder and blue-shift of the absorption edge, and also in an increase of an optical rotatory power reached about 14°/mm from 6°/mm of undoped one.

  4. The enhanced visible light photocatalytic activity of yttrium-doped BiOBr synthesized via a reactable ionic liquid

    NASA Astrophysics Data System (ADS)

    He, Minqiang; Li, Weibing; Xia, Jiexiang; Xu, Li; Di, Jun; Xu, Hui; Yin, Sheng; Li, Huaming; Li, Mengna

    2015-03-01

    Yttrium (Y)-doped BiOBr with different Y doping concentrations has been synthesized via solvothermal method in the presence of reactable ionic liquid 1-hexadecyl-3-methylimidazolium bromide ([C16mim]Br). Their structures, morphologies and optical properties were characterized by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), energy-dispersive X-ray spectroscopy (EDS) and UV-vis diffuse reflectance spectroscopy (DRS). The photocatalytic activities of the yttrium doped BiOBr samples were evaluated by the degradation of ciprofloxacin (CIP) and rhodamine B (RhB) under visible-light irradiation. The yttrium doped BiOBr exhibited enhanced photocatalytic activity for the degradation of the two types of pollutants, and the 5wt%Y-doped BiOBr showed the highest photocatalytic activity. The enhanced photocatalytic performance could be attributed to the reduced band gap and improved separation of electron-hole pairs.

  5. Lanthanide doped Bi2O3 upconversion luminescence nanospheres for temperature sensing and optical imaging.

    PubMed

    Lei, Pengpeng; Liu, Xiuling; Dong, Lile; Wang, Zhuo; Song, Shuyan; Xu, Xia; Su, Yue; Feng, Jing; Zhang, Hongjie

    2016-02-14

    Water-soluble lanthanide (Ln(3+)) doped Bi2O3 nanospheres have been successfully prepared through a solid-state-chemistry thermal decomposition process. The nanospheres exhibit intense upconversion luminescence (UCL) by doping the Ln(3+) (Ln = Yb, Er/Ho/Tm) ions into the Bi2O3 host matrix under 980 nm excitation. The ratio of red/green emission of Bi2O3:Yb(3+)/Er(3+) nanospheres exhibits a significant change as the calcination temperature increases and the value could reach 105.6. Moreover, the UCL of Bi2O3:Yb(3+)/Tm(3+) nanospheres are temperature-sensitive, where the intensity ratios of 799 and 808 nm emissions increase monotonously with temperature. The MTT assay reveals that Bi2O3:Yb(3+)/Tm(3+) nanospheres exhibit good biocompatibility by grafting citric acid molecules on the surface. The application possibility of Bi2O3:Yb(3+)/Tm(3+) nanospheres as bioprobes for optical imaging in vivo is also confirmed by the high-contrast photoluminescence images between the background and the UCL imaging area.

  6. How grain boundaries affect the efficiency of poly-CdTe solar-cells: A fundamental atomic-scale study of grain boundary dislocation cores using CdTe bi-crystal thin films.

    SciTech Connect

    Klie, Robert

    2016-10-25

    It is now widely accepted that grain boundaries in poly-crystalline CdTe thin film devices have a detrimental effect on the minority carrier lifetimes, the open circuit voltage and therefore the overall solar-cell performance. The goal of this project was to develop a fundamental understanding of the role of grain boundaries in CdTe on the carrier life-time, open-circuit voltage, Voc, and the diffusion of impurities. To achieve this goal, i) CdTe bi-crystals were fabricated with various misorientation angels, ii) the atomic- and electronic structures of the grain boundaries were characterized using scanning transmission electron microscopy (STEM), and iii) first-principles density functional theory modeling was performed on the structures determined by STEM to predict the grain boundary potential. The transport properties and minority carrier lifetimes of the bi-crystal grain boundaries were measured using a variety of approaches, including TRPL, and provided feedback to the characterization and modeling effort about the effectiveness of the proposed models.

  7. Mo doping-enhanced dye absorption of Bi2Se3 nanoflowers

    PubMed Central

    2013-01-01

    A simple solvothermal approach is explored to prepare Bi2−xMoxSe3 nanostructures by employing N,N-dimethylformamide (DMF) as the solvent. Mo plays an important role in the assembly of the Bi2−xMoxSe3 nanostructures from nanoplates to nanoflowers. Structural and morphological studies indicate that the resulting products are large specific surface area single-crystalline Bi2−xMoxSe3 nanoflowers self-assembled from thin nanoplates during the reaction process. The absorption properties of the as-prepared samples are investigated with Rhodamine B (RhB) as dye, and it is found that the Bi1.85Mo0.15Se3 nanoflowers show an optimal adsorption capacity, implying that Mo doping not only changes the morphologies of the nanostructures but also enhances their absorption behaviors. PMID:24172176

  8. Enhanced Quantum Cutting via Li(+) Doping from a Bi(3+)/Yb(3+)-Codoped Gadolinium Tungstate Phosphor.

    PubMed

    Yadav, Ran Vijay; Yadav, Ram Sagar; Bahadur, Amresh; Singh, Akhilesh Kumar; Rai, Shyam Bahadur

    2016-11-07

    The Bi(3+)/Yb(3+)-codoped gadolinium tungstate phosphor has been synthesized through a solid-state reaction method. The structural characterization reveals the crystalline nature of the phosphor. The Bi(3+)-doped phosphor emits visible radiation from the blue to red regions upon excitation with 330 and 355 nm. The addition of Yb(3+) to the Bi(3+)-doped phosphor reduces the emission intensity in the visible region and emits an intense near-infrared (NIR) photon centered at 976 nm through a quantum-cutting (QC) phenomenon. This is due to cooperative energy transfer (CET) from the (3)P1 level of Bi(3+) to the (2)F5/2 level of Yb(3+). The presence of Li(+) ions in the Bi(3+)/Yb(3+)-codoped phosphor enhances the emission intensity in the NIR region up to by 3 times, whereas the emission intensity in the visible region is significantly reduced. The energy transfer (ET) from the Bi(3+) ions to the Yb(3+) ions is confirmed by lifetime measurements, and the lifetime for the (3)P1 level of Bi(3+) decreases continuously with increasing Yb(3+) concentration. The ET efficiency (ηETE) and corresponding QC efficiency (ηQE) are calculated and found to be 29% and 129%, respectively. The presence of Li(+) enhances the QC efficiency of the phosphor up to 43%. Thus, the Bi(3+)/Yb(3+)/Li(+)-codoped phosphor is a promising candidate to enhance the efficiency of a crystalline-silicon-based solar cell through spectral conversion.

  9. Narrow band gap and visible light-driven photocatalysis of V-doped Bi6Mo2O15 nanoparticles

    NASA Astrophysics Data System (ADS)

    Xu, Jian; Qin, Chuanxiang; Huang, Yanlin; Wang, Yaorong; Qin, Lin; Seo, Hyo Jin

    2017-02-01

    Pure and V5+-doped Bi6Mo2O15 (3Bi2O3·2MoO3) photocatalysts were synthesized through electrospinning, followed by low-temperature heat treatment. The samples developed into nanoparticles with an average size of approximately 50 nm. The crystalline phases were verified via X-ray powder diffraction measurements (XRD). The surface properties of the photocatalysts were studied by scanning electron microscopy (SEM), transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS) analyses. The UV-vis spectra showed that V doping in Bi6Mo2O15 shifted the optical absorption from the UV region to the visible-light wavelength region. The energy of the band gap of Bi6Mo2O15 was reduced by V doping in the lattices. The photocatalytic activities of the pure and V-doped Bi6Mo2O15 were tested through photodegradation of rhodamine B (RhB) dye solutions under visible light irradiation. Results showed that 20 mol% V-doped Bi6Mo2O15 achieved efficient photocatalytic ability. RhB could be degraded by V-doped Bi6Mo2O15 in 2 h. The photocatalytic activities and mechanisms were discussed according to the characteristics of the crystal structure and the results of EIS and XPS measurements.

  10. Reinforced magnetic properties of Ni-doped BiFeO3 ceramic

    NASA Astrophysics Data System (ADS)

    Hwang, J. S.; Yoo, Y. J.; Lee, Y. P.; Kang, J.-H.; Lee, K. H.; Lee, B. W.; Park, S. Y.

    2016-08-01

    Multiferroic materials attract considerable interest because of the wide range of potential applications such as spintronic devices, data storage devices and sensors. As a strong candidate for the applications among the limited list of single-phase multiferroic materials, BiFeO3 (BFO) is a quite attractive material due to its multiferroic properties at room temperature (RT). However, BFO is widely known to have large leakage current and small spontaneous polarization due to the existence of crystalline defects such as oxygen vacancies. Furthermore, the magnetic moment of pure BFO is very weak owing to its antiferromagnetic nature. In this paper, the effects of Ni2+ substitution on the magnetic properties of bulk BFO were investigated. BFO, and BiFe0.99Ni0.01O3, BiFe0.98Ni0.02O3 and BiFe0.97Ni0.03O3 (BFNO: Ni-doped BFO) ceramics were prepared by solid-state reaction and rapid sintering, and analyzed by structural and magnetic-property measurements. The leakage current density was measured at RT by using a standard ferroelectric tester. All the Ni-doped BFO samples exhibited the similar rhombohedral perovskite structure ( R3c) to that of BFO. The magnetic properties of Ni-doped BFO were much enhanced with respect to BFO prepared at the same conditions, because the enhanced ferromagnetic interaction is caused by the Fe/Ni coupling.

  11. Effect of Sr doping in layered Eu3Bi2S4F4 superconductor

    NASA Astrophysics Data System (ADS)

    Zhang, Pan; Zhai, Hui-Fei; Wang, Zhen; Chen, Jian; Feng, Chun-Mu; Cao, Guang-Han; Xu, Zhu-An

    2017-01-01

    We report the effect of Sr-doping in the BiS2-based superconductor {{Eu}}3-xSr x Bi2S4F4. Eu3Bi2S4F4 is a self-doped compound with a mixed Eu valence state. By the partial substitution of Sr for Eu, T c gradually decreases and superconductivity disappears above 0.3 K when x\\gt 1.0. Magnetic-susceptibility and specific-heat measurements reveal that Sr substitution leads to a decrease in both Eu2+ and Eu3+ populations. The decreased Eu3+ population, and the corresponding lower charge carrier density, may be the main origin for the suppression of superconductivity. In addition, we find a significant increase in the Sommerfeld coefficient {γ }0 upon Sr doping, which may be due to the Kondo effect between the magnetic moments (associated to Eu2+ ions) and the conducting electrons. This work implies that the Kondo effect could compete with superconductivity in Eu3Bi2S4F4.

  12. Energetic stability, oxidation states, and electronic structure of Bi-doped NaTaO3: a first-principles hybrid functional study.

    PubMed

    Joo, Paul H; Behtash, Maziar; Yang, Kesong

    2016-01-14

    We studied the defect formation energies, oxidation states of the dopants, and electronic structures of Bi-doped NaTaO3 using first-principles hybrid density functional theory calculations. Three possible structural models, including Bi-doped NaTaO3 with Bi at the Na site (Bi@Na), with Bi at the Ta site (Bi@Ta), and with Bi at both Na and Ta sites [Bi@(Na,Ta)], are constructed. Our results show that the preferred doping sites of Bi are strongly related to the preparation conditions of NaTaO3. It is energetically more favorable to form a Bi@Na structure under Na-poor conditions, to form a Bi@Ta structure under Na-rich conditions, and to form a Bi@(Na,Ta) structure under mildly Na-rich conditions. The Bi@Na doped model shows an n-type conducting character along with an expected blueshift of the optical absorption edge, in which the Bi atoms exist as Bi(3+) (6s(2)6p(0)). The Bi@Ta doped model has empty gap states consisting of Bi 6s states in its band gap, which can lead to visible-light absorption via the electron transition among the valence band, the conduction band, and the gap states. The Bi dopant is present as a Bi(5+) ion in this model, consistent with the experimental results. In contrast, the Bi@(Na,Ta) doped model has occupied gap states consisting of Bi 6s states in its band gap, and thus visible-light absorption is also expected in this system due to electron excitation from these occupied states to the conduction band, in which the Bi dopants exist as Bi(3+) ions. Our first-principles electronic structure calculations revealed the relationship between the Bi doping sites and the material preparation conditions, and clarified the oxidation states of Bi dopants in NaTaO3 as well as the origin of different visible-light photocatalytic hydrogen evolution behaviors in Bi@Ta and Bi@(Na,Ta) doped NaTaO3. This work can provide a useful reference for preparing a Bi-doped NaTaO3 photocatalyst with desired doping sites.

  13. Microstructure, electrical and magnetic properties of Ce-doped BiFeO3 thin films

    NASA Astrophysics Data System (ADS)

    Quan, Zuci; Liu, Wei; Hu, Hao; Xu, Sheng; Sebo, Bobby; Fang, Guojia; Li, Meiya; Zhao, Xingzhong

    2008-10-01

    Bi1-xCexFeO3 (x =0, 0.05, 0.1, 0.15, and 0.20) (BCFO) thin films were deposited on Pt/TiN/Si3N4/Si and fluorine-doped SnO2 glass substrates by sol-gel technique, respectively. The effect of Ce doping on the microstructure, electrical and magnetic properties of BCFO films was studied. Compared to counterparts of BiFeO3 (BFO) film, the fitted Bi 4f7/2, Bi 4f5/2, Fe 2p3/2, Fe 2p1/2, and O 1s peaks for Bi0.8Ce0.2FeO3 film shift toward higher binding energy regions by amounts of 0.33, 0.29, 0.43, 0.58, and 0.49 eV, respectively. Raman redshifts of 2-4 cm-1 and shorter phonon lifetimes for the Bi0.8Ce0.2FeO3 film might be related to anharmonic interactions among Bi-O, Ce-O, (Bi, Ce)-O, and Fe-O bonds in the distorted oxygen octahedron. Compared to the pure counterparts, the dielectric and ferroelectric properties of the Bi0.8Ce0.2FeO3 film are improved due to the decreased oxygen vacancies by the stabilized oxygen octahedron. Current density values for the BFO and Bi0.8Ce0.2FeO3 film capacitors are 9.89×10-4 and 5.86×10-5 A/cm2 at 10 V, respectively. The current density-applied voltage characteristics indicate that the main conduction mechanism for the BCFO capacitors is the interface-controlled Schottky emission. Both the in-plane and out-of-plane magnetization-magnetic field hysteresis loops reveal that the saturation magnetization values of the BCFO films increase with increasing the Ce concentration. The enhanced magnetic properties for the BCFO films might be attributed to the presence of Fe2+ caused by oxygen vacancies, the suppressed spiral spin structure, and/or the increased canting angle induced by Ce doping.

  14. Optical processes in (Y,Bi)VO4 doped with Eu3+ or Pr3+.

    PubMed

    Boutinaud, Philippe

    2014-10-08

    Zircon and fergusonite-type vanadates either undoped or doped with Eu(3+) or Pr(3+) are synthesized in the system (Y,Bi)2O3-V2O5 by solid state and coprecipitation procedures. Their optical properties are investigated at 300 and 77 K and the luminescence mechanisms are discussed on the basis of energy level schemes that combine the host and the dopant states. Fergusonite BiVO4 is shown to glow in the deep red region at 77 K upon excitation at 450 nm and shorter wavelengths. Host sensitization is demonstrated in Eu(3+)-doped fergusonite BiVO4 and zircon BiVO4 at 77 K, but lost as temperature is raised to 300 K. The origin of this effect is addressed by considering the nature of the host-band edge states and self-quenching processes. The near-UV excited luminescence in the system (Y, Bi)VO4:Pr(3+) (zircon) consists of the yellow bandlike emission of the zircon host and of the characteristic red (1)D2 → (3)H4 emission lines of Pr(3+) in vanadates. The relative contribution of these features can be fine-tuned at room temperature by adjusting the composition of the materials or the excitation wavelength.

  15. Neutron diffraction study of Bi doped cubic spinel Co{sub 2}MnO{sub 4}

    SciTech Connect

    Rajeevan, N. E.; Kaushik, S. D.; Kumar, Ravi

    2015-06-24

    Polycrystalline Bi doped spinel Bi{sub x}Co{sub 2-x}MnO{sub 4} compounds were prepared by solid state reaction route. Room temperature neutron diffraction study reveals that all the compounds are formed in cubic phase and there is no change in the crystal structure due to Bi doping and the compound has cubic structure with Fd-3m space group. Cell parameter found to increase with respect to Bi doping and ferrimagnetic nature is established through magnetization. Low temperature neutron diffraction is carried out and emphasis the ferrimagnetic ordering in the samples of Bi{sub x}Co{sub 2-x}MnO{sub 4} series.

  16. Photoelectrochemical performance of W-doped BiVO4 thin films deposited by spray pyrolysis

    NASA Astrophysics Data System (ADS)

    Holland, S. Keith; Dutter, Melissa R.; Lawrence, David J.; Reisner, Barbara A.; DeVore, Thomas C.

    2014-01-01

    The effects of tungsten doping and hydrogen annealing on the photoelectrochemical (PEC) performance of bismuth vanadate (BiVO4) photoanodes for solar water splitting were studied. Thin films of BiVO were deposited on indium tin oxide-coated glass slides by ultrasonic spray pyrolysis of an aqueous solution containing bismuth nitrate and vanadium oxysulfate. Tungsten doping was achieved by adding either silicotungstic acid (STA) or ammonium metatungstate (AMT) to the precursor. The 1.7- to 2.2-μm-thick films exhibited a highly porous microstructure. Undoped films that were reduced at 375°C in 3% H exhibited the largest photocurrent densities under 0.1 W cm-2 AM1.5 illumination, where photocurrent densities of up to 1.3 mA cm-2 at 0.5 V with respect to Ag/AgCl were achieved. Films doped with 1% or 5% (atomic percent) tungsten from either STA or AMT exhibited reduced PEC performance and greater sample-to-sample performance variations. Powder x-ray diffraction data indicated that the films continue to crystallize in the monoclinic polymorph at low doping levels but crystallize in the tetragonal scheelite structure at higher doping. It is surmised that the phase and morphology differences promoted by the addition of W during the deposition process reduced the PEC performance as measured by photovoltammetry.

  17. Bi-phasic titanium dioxide nanoparticles doped with nitrogen and neodymium for enhanced photocatalysis

    NASA Astrophysics Data System (ADS)

    Gomez, Virginia; Bear, Joseph C.; McNaughter, Paul D.; McGettrick, James D.; Watson, Trystan; Charbonneau, Cecile; O'Brien, Paul; Barron, Andrew R.; Dunnill, Charles W.

    2015-10-01

    Bi-phasic or multi-phasic composite nanoparticles for use in photocatalysis have been produced by a new synthetic approach. Sol-gel methods are used to deposit multiple layers of active material onto soluble substrates. In this work, a layer of rutile (TiO2) was deposited onto sodium chloride pellets followed by an annealing step and a layer of anatase. After dissolving the substrate, bi-phasic nanoparticles containing half anatase and half rutile TiO2; with ``Janus-like'' characteristics are obtained. Nitrogen and neodymium doping of the materials were observed to enhance the photocatalytic properties both under UV and white light irradiation. The unique advantage of this synthetic method is the ability to systematically dope separate sides of the nanoparticles. Nitrogen doping was found to be most effective on the anatase side of the nanoparticle while neodymium was found to be most effective on the rutile side. Rhodamine B dye was effectively photodegraded by co-doped particles under white light.Bi-phasic or multi-phasic composite nanoparticles for use in photocatalysis have been produced by a new synthetic approach. Sol-gel methods are used to deposit multiple layers of active material onto soluble substrates. In this work, a layer of rutile (TiO2) was deposited onto sodium chloride pellets followed by an annealing step and a layer of anatase. After dissolving the substrate, bi-phasic nanoparticles containing half anatase and half rutile TiO2; with ``Janus-like'' characteristics are obtained. Nitrogen and neodymium doping of the materials were observed to enhance the photocatalytic properties both under UV and white light irradiation. The unique advantage of this synthetic method is the ability to systematically dope separate sides of the nanoparticles. Nitrogen doping was found to be most effective on the anatase side of the nanoparticle while neodymium was found to be most effective on the rutile side. Rhodamine B dye was effectively photodegraded by co-doped

  18. Upconversion luminescence, ferroelectrics and piezoelectrics of Er Doped SrBi4Ti4O15

    NASA Astrophysics Data System (ADS)

    Peng, Dengfeng; Zou, Hua; Xu, Chaonan; Wang, Xusheng; Yao, Xi; Lin, Jian; Sun, Tiantuo

    2012-12-01

    Er3+ doped SrBi4Ti4O15 (SBT) bismuth layered-structure ferroelectric ceramics were synthesized by the traditional solid-state method, and their upconversion photoluminescent (UC) properties were investigated as a function of Er3+ concentration and incident pump power. Green (555 nm) and red (670 nm) emission bands were obtained under 980 nm excitation at room temperature, which corresponded to the radiative transitions from 4S3/2, and 4F9/2 to 4I15/2, respectively. The emission color of the samples could be changed with moderating the doping concentrations. The dependence of UC intensity on pumping power indicated a two-photon emission process. Studies on dielectric properties indicated that the introduction of Er increased the ferroelectric-paraelectric phase transition temperature (Tc) of SBT, thus making this ceramic suitable for piezoelectric sensor applications at higher temperatures. Piezoelectric measurement showed that the doped SBT had a relative higher piezoelectric constant d33 compared with the non-doped ceramics. The thermal annealing behaviors of the doped sample revealed a stable piezoelectric property. The doped SBT showed bright UC emission while simultaneously having increased Tc and d33. As a multifunctional material, Er doped SBT ferroelectric oxide showed great potential in application of sensor, future optical-electro integration and coupling devices.

  19. Synthesis and photocatalytic properties of Co- and Cu-doped Bi2Sn2O7

    NASA Astrophysics Data System (ADS)

    Zhuang, Jing; Hu, Chaohao; Zhu, Binqing; Zhong, Yan; Zhou, Huaiying

    2017-01-01

    Bi2Sn2O7 photocatalysts doped by Co and Cu ions were successfully synthesized by using the hydrothermal process and impregnation method. The products were characterized using X-ray diffraction analysis (XRD), Field emission scanning electron microscopy (FESEM), Energy dispersive X-ray detector (EDS), infrared spectroscopy (IR), the photoluminescence (PL) spectra and UV-visible diffuse reflectance spectroscopy (DRS). The photocatalytic properties were further evaluated by degrading rhodamine B (RhB) as a model pollution under visible-light irradiation. The results indicated that Co- and Cu-doped Bi2Sn2O7 photocatalysts have a cubic pyrochlore phase with the hybrid metals. The metal-loaded photocatalysts show the enhanced photocatalytic efficiency for degradation of RhB under visible-light (λ> 420 nm). The mechanism of improved photocatalytic activity is also discussed in detail.

  20. Electronic and optical properties of N-doped Bi2O3 polymorphs for visible light-induced photocatalysis.

    PubMed

    Wang, Fang; Cao, Kun; Wu, Yi; Patzke, Greta R; Zhou, Ying

    2015-03-01

    The effect of N doping on the crystal structure, electronic, and optical properties of α-Bi2O3 and β-Bi2O3 has been studied in detail based with first principle calculations. The crystallographic features of Bi2O3 polymorphs are not substantially changed through N doping, whereas charge transfer from Bi to N results in large variations of charge density distribution. N-doped β-Bi2O3 exhibits improved thermal stability due to stronger Bi-N covalent bonds and lower defect formation energy, and the convenient preparative access agrees well with experimental observations. Calculated band structures and optical properties indicate that N doping does not induce major band gap narrowing, but leads to the presence of isolated bands above the VBM induced by N 2p for both α-Bi2O3 and β-Bi2O3 which induce large red-shifts of their visible light absoprtion properties. These isolated bands act as acceptor levels and facilitate electron transition under visible light illumination through introduction of steps between VB and CB, thereby rendering the materials quite promising for photocatalytic applications.

  1. Effect of doping in the Bi-Sr-Ca-Cu-O superconductor

    NASA Technical Reports Server (NTRS)

    Akbar, S. A.; Wong, M. S.; Botelho, M. J.; Sung, Y. M.; Alauddin, M.; Drummer, C. E.; Fair, M. J.

    1991-01-01

    The results of the effect of doping on the superconducting transition in the Bi-Sr-Ca-Cu-O system are reported. Samples were prepared under identical conditions with varying types (Pb, Sb, Sn, Nb) and amounts of dopants. All samples consisted of multiple phases, and showed stable and reproducible superconducting transitions. Stabilization of the well known 110 K phase depends on both the type and amount of dopant. No trace of superconducting phase of 150 K and above was observed.

  2. Structural and dielectric properties of Nd/Ca co-doped bi-ferrite multiferroics

    SciTech Connect

    Kumar, Ashwini E-mail: ashu.dhanda@gmail.com; Sharma, Poorva E-mail: ashu.dhanda@gmail.com; Varshney, Dinesh E-mail: ashu.dhanda@gmail.com

    2014-04-24

    Single-phase polycrystalline samples of Bi{sub 0.8}Nd{sub 0.2−x}Ca{sub x}FeO{sub 3} (x = 0.0, 0.1) were synthesized by chemical coprecipitation method. X-ray diffraction patterns accompanied by Rietveld-refined crystal structure parameters reveal the phase transition of Bi{sub 0.8}Nd{sub 0.1}Ca{sub 0.1}FeO{sub 3} with rhombohedral R3c symmetry to triclinic structure of Bi{sub 0.8}Nd{sub 0.2}FeO{sub 3} sample. Frequency dependence of dielectric constant (ε') and dielectric loss (tanδ), infers enhancement of both ε' (tanδ) in narrow band gap of Nd/Ca co-doped BFO as compare to wide band pristine BFO.

  3. Experimental and density functional study of Mn doped Bi2Te3 topological insulator

    NASA Astrophysics Data System (ADS)

    Ghasemi, A.; Kepaptsoglou, D.; Figueroa, A. I.; Naydenov, G. A.; Hasnip, P. J.; Probert, M. I. J.; Ramasse, Q.; van der Laan, G.; Hesjedal, T.; Lazarov, V. K.

    2016-12-01

    We present a nanoscale structural and density functional study of the Mn doped 3D topological insulator Bi2Te3. X-ray absorption near edge structure shows that Mn has valency of nominally 2+. Extended x-ray absorption fine structure spectroscopy in combination with electron energy loss spectroscopy (EELS) shows that Mn is a substitutional dopant of Bi and Te and also resides in the van der Waals gap between the quintuple layers of Bi2Te3. Combination of aberration-corrected scanning transmission electron microscopy and EELS shows that Mn substitution of Te occurs in film regions with increased Mn concentration. First-principles calculations show that the Mn dopants favor octahedral sites and are ferromagnetically coupled.

  4. Doping-Dependent Nodal Fermi Velocity in Bi-2212 Revealed by High-Resolution ARPES

    SciTech Connect

    Vishik, I. M.

    2011-08-19

    The improved resolution of laser-based angle-resolved photoemission spectroscopy (ARPES) allows reliable access to fine structures in the spectrum. We present a systematic, doping-dependent study of a recently discovered low-energy kink in the nodal dispersion of Bi{sub 2}Sr{sub 2}CaCu{sub 2}O{sub 8+{delta}} (Bi-2212), which demonstrates the ubiquity and robustness of this kink in underdoped Bi-2212. The renormalization of the nodal velocity due to this kink becomes stronger with underdoping, revealing that the nodal Fermi velocity is non-universal, in contrast to assumed phenomenology. This is used together with laser-ARPES measurements of the gap velocity, v{sub 2}, to resolve discrepancies with thermal conductivity measurements.

  5. Magnetic and Structural Transition Properties of Niobium-Doped BiFeO3 Thin Films

    NASA Astrophysics Data System (ADS)

    Chen, H. Z.; Kao, M. C.; Young, S. L.

    2013-06-01

    Niobium-substituted BiFeO3(BiFe1-xNbxO3BFNO) thin films were successfully deposited on Pt(111)/Ti/SiO2/Si(100) substrates by spin coating with a sol-gel technology and rapid thermal annealing. The effects of Nb content (x = 0 0.08) on the microstructure, magnetic and multiferroic properties of thin films were investigated. The result of X-ray diffraction analysis shows that the BFNO thin films have rhombohedral (R3c) to tetragonal (P4mm) phase transition at x = 0.06. The Nb doping in the B-site of BiFeO3 could induce the appearance of the spontaneous magnetization and polarization by the phase transition of rhombohedral-to-tetragonal. The BFNO thin films with x = 0.06 exhibits the maximum remanent magnetization (2Mr) of 5.2 emu/g.

  6. Transport Property Measurements in Doped Bi2Te3 Single Crystals Obtained via Zone Melting Method

    NASA Astrophysics Data System (ADS)

    Jariwala, Bhakti; Shah, Dimple; Ravindra, N. M.

    2015-06-01

    Single crystals of Se- and Fe-doped Bi2Te3 have been synthesized via the zone melting method. Energy-dispersive x-ray and x-ray powder diffraction analyses have been carried out to identify the constituent elements and determine the lattice parameters of the grown crystals. Surface topological features of the as-grown single crystals have been studied. The transport properties of doped stoichiometric Bi2Te3 single crystals have been studied by measuring the thermoelectric power and electrical conductivity in the temperature range from 303 K to 473 K. The thermoelectric power, S, effective mass, scattering parameter, and Fermi energy have been calculated from thermoelectric power measurements. The temperature dependence of the electrical conductivity, σ, shows that the dopants in the crystals are thermally activated. All the crystals exhibit semiconducting behavior as confirmed by the temperature dependence of σ and S. The effective mass of electrons and the effective density of states have been determined and are reported for Bi2Te3- x Se x (0 ≤ x ≤ 0.3) and Bi2- y Fe y Te3 (0 ≤ y ≤ 0.3).

  7. Bactericidal activity and mechanism of Ti-doped BiOI microspheres under visible light irradiation.

    PubMed

    Liang, Jialiang; Deng, Jun; Li, Mian; Xu, Tongyan; Tong, Meiping

    2016-11-01

    Ti doped BiOI microspheres were successfully synthesized through a solvothermal method. The photocatalysts were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), energy-dispersive X-ray spectroscopy (EDX), high-resolution transmission electron microscopy (HRTEM), X-ray photoelectron spectroscopy (XPS) and UV-vis diffuse reflectance spectra (DRS) spectroscopy, respectively. The as-synthesized microspheres had 3D hierarchical structures, and the morphologies and visible-light-driven (VLD) disinfection performances were found to be determined by the amount of loaded Ti. The incorporation of Ti in the lattice of BiOI broadened the band gap of BiOI and enhanced the VLD disinfection activity. Ti doped BiOI microspheres with the optimal Ti content exhibited excellent antibacterial performances against both representative Gram-negative and Gram-positive strains, which completely inactivated 3.0×10(7)CFUmL(-1)E. coli in 24min and 3.0×10(6)CFU mL(-1)S. aureus in 45min, respectively. Active species including h(+), e(-), O2(-) and H2O2 were found to play important roles in disinfection system. Moreover, the damage of cell membrane and emission of cytoplasm directly led to the inactivation.

  8. Degradation and capacitance: voltage hysteresis in CdTe devices

    NASA Astrophysics Data System (ADS)

    Albin, D. S.; Dhere, R. G.; Glynn, S. C.; del Cueto, J. A.; Metzger, W. K.

    2009-08-01

    CdS/CdTe photovoltaic solar cells were made on two different transparent conducting oxide (TCO) structures in order to identify differences in fabrication, performance, and reliability. In one set of cells, chemical vapor deposition (CVD) was used to deposit a bi-layer TCO on Corning 7059 borosilicate glass consisting of a F-doped, conductive tin-oxide (cSnO2) layer capped by an insulating (undoped), buffer (iSnO2) layer. In the other set, a more advanced bi-layer structure consisting of sputtered cadmium stannate (Cd2SnO4; CTO) as the conducting layer and zinc stannate (Zn2SnO4; ZTO) as the buffer layer was used. CTO/ZTO substrates yielded higher performance devices however performance uniformity was worse due to possible strain effects associated with TCO layer fabrication. Cells using the SnO2-based structure were only slightly lower in performance, but exhibited considerably greater performance uniformity. When subjected to accelerated lifetime testing (ALT) at 85 - 100 °C under 1-sun illumination and open-circuit bias, more degradation was observed in CdTe cells deposited on the CTO/ZTO substrates. Considerable C-V hysteresis, defined as the depletion width difference between reverse and forward direction scans, was observed in all Cu-doped CdTe cells. These same effects can also be observed in thin-film modules. Hysteresis was observed to increase with increasing stress and degradation. The mechanism for hysteresis is discussed in terms of both an ionic-drift model and one involving majority carrier emission in the space-charge region (SCR). The increased generation of hysteresis observed in CdTe cells deposited on CTO/ZTO substrates suggests potential decomposition of these latter oxides when subjected to stress testing.

  9. Atomic-Scale Magnetism of Cr-Doped Bi2Se3 Thin Film Topological Insulators.

    PubMed

    Liu, Wenqing; West, Damien; He, Liang; Xu, Yongbing; Liu, Jun; Wang, Kejie; Wang, Yong; van der Laan, Gerrit; Zhang, Rong; Zhang, Shengbai; Wang, Kang L

    2015-10-27

    Magnetic doping is the most common method for breaking time-reversal-symmetry surface states of topological insulators (TIs) to realize novel physical phenomena and to create beneficial technological applications. Here we present a study of the magnetic coupling of a prototype magnetic TI, that is, Cr-doped Bi2Se3, in its ultrathin limit which is expected to give rise to quantum anomalous Hall (QAH) effect. The high quality Bi2-xCrxSe3 epitaxial thin film was prepared using molecular beam epitaxy (MBE), characterized with scanning transimission electron microscopy (STEM), electrical magnetotransport, and X-ray magnetic circularly dichroism (XMCD) techniques, and the results were simulated using density functional theory (DFT) with spin-orbit coupling (SOC). We observed a sizable spin moment mspin = (2.05 ± 0.20) μB/Cr and a small and negative orbital moment morb = (-0.05 ± 0.02) μB/Cr of the Bi1.94Cr0.06Se3 thin film at 2.5 K. A remarkable fraction of the (CrBi-CrI)(3+) antiferromagnetic dimer in the Bi2-xCrxSe3 for 0.02 < x < 0.40 was obtained using first-principles simulations, which was neglected in previous studies. The spontaneous coexistence of ferro- and antiferromagnetic Cr defects in Bi2-xCrxSe3 explains our experimental observations and those based on conventional magnetometry which universally report magnetic moments significantly lower than 3 μB/Cr predicted by Hund's rule.

  10. Dual function of rare earth doped nano Bi2O3: white light emission and photocatalytic properties.

    PubMed

    Dutta, Dimple P; Roy, Mainak; Tyagi, A K

    2012-09-14

    Undoped Bi(2)O(3) and single and double doped Bi(2)O(3) : M (where M = Tb(3+) and Eu(3+)) nanophosphors were synthesized through a simple sonochemical process and characterized by using X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), high resolution transmission electron microscopy (HRTEM), EDS, diffuse reflectance (DRS) and photoluminescence (PL) spectrophotometry. The TEM micrographs show that resultant nanoparticles have a rod-like shape. Energy transfer was observed from host to the dopant ions. Characteristic green emissions from Tb(3+) ions and red emissions from Eu(3+) ions were observed. Interestingly, the Commission International de l'Eclairage (CIE) coordinates of the double doped Bi(2)O(3) : Eu(3+)(0.8%) : Tb(3+)(1.2%) nanorods lie in the white light region of the chromaticity diagram and it has a quantum efficiency of 51%. The undoped Bi(2)O(3) showed a band gap of 3.98 eV which is red shifted to 3.81eV in the case of double doped Bi(2)O(3) : Eu(3+)(0.8%) : Tb(3+)(1.2%) nanorods. The photocatalytic activities of undoped nano Bi(2)O(3) and double doped nano Bi(2)O(3) : Eu(3+)(0.8%) : Tb(3+)(1.2%) were evaluated for the degradation of Rhodamine B under UV irradiation of 310 nm. The results showed that Bi(2)O(3) : Eu(3+)(0.8%) : Tb(3+)(1.2%) had better photocatalytic activity compared to undoped nano Bi(2)O(3). The evolution of CO(2) was realized and these results indicated the continuous mineralization of rhodamine B during the photocatalytic process. Thus double doped Bi(2)O(3) : Eu(3+)(0.8%) : Tb(3+)(1.2%) nanorods can be termed as a bifunctional material exhibiting both photocatalytic properties and white light emission.

  11. Tailoring surface phase transition and magnetic behaviors in BiFeO3 via doping engineering

    NASA Astrophysics Data System (ADS)

    Yan, Feng; Xing, Guozhong; Wang, Rongming; Li, Lin

    2015-03-01

    The charge-spin interactions in multiferroic materials (e.g., BiFeO3) have attracted enormous attention due to their high potential for next generation information electronics. However, the weak and deficient manipulation of charge-spin coupling notoriously limits their commercial applications. To tailor the spontaneous charge and the spin orientation synergistically in BiFeO3 (BFO), in this report, the 3d element of Mn doping engineering is employed and unveils the variation of surface phase transition and magnetic behaviors by introducing chemical strain. The spontaneous ferroelectric response and the corresponding domain structures, magnetic behaviors and spin dynamics in Mn-doped BFO ceramics have been investigated systematically. Both the surface phase transition and magnetization were enhanced in BFO via Mn doping. The interaction between the spontaneous polarization charge and magnetic spin reorientation in Mn-doped BFO are discussed in detail. Moreover, our extensive electron paramagnetic resonance (EPR) results demonstrate that the 3d dopant plays a paramount role in the surface phase transition, which provides an alternative route to tune the charge-spin interactions in multiferroic materials.

  12. Tailoring surface phase transition and magnetic behaviors in BiFeO3 via doping engineering

    PubMed Central

    Yan, Feng; Xing, Guozhong; Wang, Rongming; Li, Lin

    2015-01-01

    The charge-spin interactions in multiferroic materials (e.g., BiFeO3) have attracted enormous attention due to their high potential for next generation information electronics. However, the weak and deficient manipulation of charge-spin coupling notoriously limits their commercial applications. To tailor the spontaneous charge and the spin orientation synergistically in BiFeO3 (BFO), in this report, the 3d element of Mn doping engineering is employed and unveils the variation of surface phase transition and magnetic behaviors by introducing chemical strain. The spontaneous ferroelectric response and the corresponding domain structures, magnetic behaviors and spin dynamics in Mn-doped BFO ceramics have been investigated systematically. Both the surface phase transition and magnetization were enhanced in BFO via Mn doping. The interaction between the spontaneous polarization charge and magnetic spin reorientation in Mn-doped BFO are discussed in detail. Moreover, our extensive electron paramagnetic resonance (EPR) results demonstrate that the 3d dopant plays a paramount role in the surface phase transition, which provides an alternative route to tune the charge-spin interactions in multiferroic materials. PMID:25774619

  13. Doping induced grain size reduction and photocatalytic performance enhancement of SrMoO4:Bi3+

    NASA Astrophysics Data System (ADS)

    Wang, Yunjian; Xu, Hui; Shao, Congying; Cao, Jing

    2017-01-01

    Ion doping is one of the most effective ways to develop photocatalysts by creating impurity levels in the energy band structure. In this paper, novel Bi3+ doped SrMoO4 (SrMoO4:Bi3+) nanocrystals were prepared by a simple hydrothermal method. By systematic characterizations using x-ray diffraction, infrared spectra, UV-vis spectra, X-ray photoelectron spectroscopy and transmission electron microscopy, it is demonstrated that all the samples crystallized in a single phase of scheelite structure, and particle sizes of SrMoO4:Bi3+ gradually decreased. The Bi3+ doped nanoparticles showed lattice contraction, and band-gap narrowing. The photocatalytic activity of the samples was measured by monitoring the degradation of methylene blue dye in an aqueous solution under UV-radiation exposure. It is found that SrMoO4:Bi3+ showed excellent activity toward photodegradation of methylene blue solution under UV light irradiation compared to the pure SrMoO4. These observations are interpreted in terms of the Bi3+ doping effects and the increased the surface active sites, which results in the improved the ratio of surface charge carrier transfer rate and reduced the electron-hole recombination rate. These results illustrate the potential of particle size and surface defect regulation for the construction of novel semiconductor oxide photocatalysts by ion doping.

  14. W/Mo co-doped BiVO4 for photocatalytic treatment of polymer-containing wastewater in oilfield

    NASA Astrophysics Data System (ADS)

    Zhou, Ying; Li, Wei; Wan, Wenchao; Zhang, Ruiyang; Lin, Yuanhua

    2015-06-01

    Polymer flooding is an effective way to enhance oil recovery (EOR). However, the treatment of the oily wastewater becomes an urgent issue. Photocatalysis is a promising approach for this purpose. In this report, W/Mo co-doped BiVO4 particles are synthesized by hydrothermal method. W/Mo co-doping could promote an effective separation of photogenerated carriers reflecting from the 6 times higher photocurrent density compared to pure BiVO4. The photodegradation of partially hydrolyzed polyacrylamide (HPAM) over 0.5 at.% W and 1.5 at.% Mo co-doped BiVO4 is 43% under UV-vis light irradiation for 3 h, which is much higher than that of pure BiVO4 (18%).

  15. Diode-pumped passively Q-switched Nd:GGG laser with a Bi-doped GaAs semiconductor saturable absorber

    NASA Astrophysics Data System (ADS)

    Cong, Wen; Li, Dechun; Zhao, Shengzhi; Yang, Kejian; Li, Xiangyang; Qiao, Hui; Liu, Ji

    2014-12-01

    Passive Q-switching of a diode-pumped Nd:GGG laser is demonstrated using Bi-doped GaAs as saturable absorber. The Bi-doped GaAs wafer is fabricated by ion implantation and subsequent annealing. Compared with the Q-switched laser by undoped GaAs semiconductor saturable absorber, the laser with Bi-doped GaAs as saturable absorber can produce higher output power, shorter pulses, higher single pulse energies and higher peak powers. These results suggest that Bi-doped GaAs can be a promising new candidate of semiconductor saturable absorber in Q-switched laser.

  16. Passively Q-switched and mode-locked Nd:GGG laser with a Bi-doped GaAs saturable absorber.

    PubMed

    Cong, Wen; Li, Dechun; Zhao, Shengzhi; Yang, Kejian; Li, Xiangyang; Qiao, Hui; Liu, Ji

    2014-06-16

    A simultaneously passively Q-switched and mode-locked (QML) Nd:GGG laser using a Bi-doped GaAs wafer as saturable absorber is accomplished for the first time. The Bi-doped GaAs wafer is fabricated by ion implantation and subsequent annealing. In comparison to the passively QML laser with GaAs, the QML laser with Bi-doped GaAs can generate more stable pulses with 99% modulation depth. The experiment results indicate that the Bi-doped GaAs could be an excellent saturable absorber for diode-pumped QML lasers.

  17. Structural, optical and dielectric property of Co doped Bi{sub 2}Fe{sub 4}O{sub 9}

    SciTech Connect

    Swain, Smita Mohapatra, S. R. Sahoo, B. Singh, A. K.

    2014-04-24

    Multiferroic Bi{sub 2}Fe{sub 4}O{sub 9} and Co doped Bi{sub 2}Fe{sub 4}O{sub 9} are prepared by solid state route reaction method using bismuth oxide(Bi{sub 2}O{sub 3}), iron oxide(Fe{sub 2}O{sub 3}) and cobalt oxide (Co{sub 3}O{sub 4}). Their structural optical and dielectric properties are studied and compared. X-ray diffraction (XRD) results confirm that there is no change in crystal structure due to Co doping. From dielectric constant measurement we conclude that dielectric constant increases due to Co doping. UV-Visible plot shows due to Co doping bang gap energy increases.

  18. Electrospun nanofibers of Bi-doped TiO2 with high photocatalytic activity under visible light irradiation.

    PubMed

    Xu, Jie; Wang, Wenzhong; Shang, Meng; Gao, Erping; Zhang, Zhijie; Ren, Jia

    2011-11-30

    Bi-doped TiO(2) nanofibers with different Bi content were firstly prepared by an electrospinning method. The as-prepared nanofibers were characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), photoluminescence spectra (PL), and UV-vis diffuse reflectance spectroscopy (DRS). The results indicated that Bi(3+) ions were successfully incorporated into TiO(2) and extended the absorption of TiO(2) into visible light region. The photocatalytic experiments showed that Bi-doped TiO(2) nanofibers exhibited higher activities than sole TiO(2) in the degradation of rhodamine B (RhB) and phenol under visible light irradiation (λ>420 nm), and 3% Bi:TiO(2) samples showed the highest photocatalytic activities.

  19. Microstructure and dielectric behavior of Bi2O3-doped KSr2Nb5O15 ceramics.

    PubMed

    Hu, Guoxin; Gao, Feng; Liu, Liangliang; Deng, Zhenqi; Liu, Zhengtang

    2013-07-01

    Bi2O3-doped KSr2Nb5O15(KSNB) ceramics with relative density higher than 96% were successfully prepared by sintering at 1300 °C. The addition of Bi2O3 will decrease the tetragonal degree of the materials, improve the densification, and promote the grain growth of KSNB ceramics. Relaxation behavior can be observed in KSNB ceramics, which is attributed to the complex response of the polar nanoregions and matrices resulting from substitution of Bi3+ for Sr2+ and K+. Bi2O3-doped KSr2Nb5O15 ceramics show good temperature-dependence performance and high dielectric tunability. KSNB ceramics with 4.0 wt% added Bi2O3 show the maximum tunability, and capacitance changes with temperature meet the requirement of the X7R standard, which makes these ceramics promising candidate materials for multilayer capacitors and tunable phase shifters.

  20. Enhanced visible light photocatalytic activity of Gd-doped BiFeO3 nanoparticles and mechanism insight

    NASA Astrophysics Data System (ADS)

    Zhang, Ning; Chen, Da; Niu, Feng; Wang, Sen; Qin, Laishun; Huang, Yuexiang

    2016-05-01

    To investigate the effect of Gd doping on photocatalytic activity of BiFeO3 (BFO), Gd-doped BFO nanoparticles containing different Gd doping contents (Bi(1‑x)GdxFeO3, x = 0.00, 0.01, 0.03, 0.05) were synthesized using a facile sol-gel route. The obtained products were characterized by X-ray diffraction, scanning electron microscopy, transmission electron microscopy, X-ray photoelectron spectra, and ultraviolet-visible diffuse reflectance spectroscopy, and their photocatalytic activities were evaluated by photocatalytic decomposition of Rhodamine B in aqueous solution under visible light irradiation. It was found that the Gd doping content could significantly affect the photocatalytic activity of as-prepared Gd-doped BFO, and the photocatalytic activity increased with increasing the Gd doping content up to the optimal value and then decreased with further enhancing Gd doping content. To elucidate the enhanced photocatalytic mechanism of Gd-doped BFO, the trapping experiments, photoluminescence, photocurrent and electrochemical impedance measurements were performed. On the basis of these experimental results, the enhanced photocatalytic activities of Gd-doped BFO could be ascribed to the increased optical absorption, the efficient separation and migration of photogenerated charge carriers as well as the decreased recombination probability of electron-hole pairs derived from the Gd doping effect. Meanwhile, the possible photocatalytic mechanism of Gd-doped BFO was critically discussed.

  1. Enhanced visible light photocatalytic activity of Gd-doped BiFeO3 nanoparticles and mechanism insight

    PubMed Central

    Zhang, Ning; Chen, Da; Niu, Feng; Wang, Sen; Qin, Laishun; Huang, Yuexiang

    2016-01-01

    To investigate the effect of Gd doping on photocatalytic activity of BiFeO3 (BFO), Gd-doped BFO nanoparticles containing different Gd doping contents (Bi(1−x)GdxFeO3, x = 0.00, 0.01, 0.03, 0.05) were synthesized using a facile sol-gel route. The obtained products were characterized by X-ray diffraction, scanning electron microscopy, transmission electron microscopy, X-ray photoelectron spectra, and ultraviolet-visible diffuse reflectance spectroscopy, and their photocatalytic activities were evaluated by photocatalytic decomposition of Rhodamine B in aqueous solution under visible light irradiation. It was found that the Gd doping content could significantly affect the photocatalytic activity of as-prepared Gd-doped BFO, and the photocatalytic activity increased with increasing the Gd doping content up to the optimal value and then decreased with further enhancing Gd doping content. To elucidate the enhanced photocatalytic mechanism of Gd-doped BFO, the trapping experiments, photoluminescence, photocurrent and electrochemical impedance measurements were performed. On the basis of these experimental results, the enhanced photocatalytic activities of Gd-doped BFO could be ascribed to the increased optical absorption, the efficient separation and migration of photogenerated charge carriers as well as the decreased recombination probability of electron-hole pairs derived from the Gd doping effect. Meanwhile, the possible photocatalytic mechanism of Gd-doped BFO was critically discussed. PMID:27198166

  2. Shape evolution of Eu-doped Bi{sub 2}WO{sub 6} and their photocatalytic properties

    SciTech Connect

    Xu, Xuetang Ge, Yuanxing Li, Bin Fan, Fangling Wang, Fan

    2014-11-15

    Highlights: • Hydrothermal synthesis of Eu-doped Bi{sub 2}WO{sub 6} micro/nanostructure without any additives. • Dopant and doping level affect the shape evolution and photocatalytic activities. • Eu-doped Bi{sub 2}WO{sub 6} exhibit superior photocatalytic activity in degradation of RhB. - Abstract: Europium-doped bismuth tungstate (Eu-doped Bi{sub 2}WO{sub 6}) was synthesized via hydrothermal method. The composition, structure, and microstructure of the products were characterized by X-ray diffraction and scanning electron microscopy. Depending on the doping level, nanoflakes and 3D hierarchical microspheres were formed. The photocatalytic activities of all products obtained were evaluated by the degradation of Rhodamine-B under visible light irradiation. A substantially improved photocatalytic performance of Eu-doped Bi{sub 2}WO{sub 6} is achieved. This study demonstrates a simple method that could produce stable photocatalysts with greatly enhanced performance.

  3. Spectroscopic properties and near-infrared broadband luminescence of Bi-doped SrB4O7 glasses and crystalline materials.

    PubMed

    Su, Liangbi; Zhou, Peng; Yu, Jun; Li, Hongjun; Zheng, Lihe; Wu, Feng; Yang, Yan; Yang, Qiuhong; Xu, Jun

    2009-08-03

    Spectroscopic properties of Bi-doped SrB(4)O(7) glasses, sintered compounds, polycrystalline materials, and single crystals were investigated. Broadband near-infrared luminescence was realized in Bi-doped SrB(4)O(7) glasses with basicity and polycrystalline materials with non-bridging oxygens. In Bi:SrB(4)O(7) single crystals, only visible luminescence of Bi(3+) and Bi(2+) was observed, but no near-infrared. The rigid three-dimensional network of SrB(4)O(7) crystal is proved to be unfavorable for accommodation of Bi(+) ions.

  4. The influence of critical current density of Bi-2212 superconductors by defects after Yb-doping

    NASA Astrophysics Data System (ADS)

    Lu, Tianni; Zhang, Cuiping; Guo, Shengwu; Wu, Yifang; Li, Chengshan; Zhou, Lian

    2015-12-01

    Bi2Sr2Ca1-xYbxCu2O8+δ (Bi-2212) single crystals with x = 0.000, 0.005, 0.010 and 0.020 have been prepared by self-flux method. The influences of Yb doping on the formation of the dislocations in the lattice structures, as well as the related current carrying capability are investigated. Due to the SQUID measurement and the Bean model calculation, the maximum critical current density (Jc) is obtained when the Yb doping content is x = 0.010, though the Tc and the carrier concentration are not in the optimal region. Based on the HRTEM analyses of the Ca-O and Cu-O2 layers, the optimal dislocation density in the Cu-O2 layers is deduced according to the number of the dislocations per unit area. Besides, the sizes of the dislocations also prove the effectiveness of Yb substitution on the enhancement of the current carrying capability in Bi-2212 single crystals.

  5. Degradation of topological surface state by nonmagnetic S doping in SrxBi2Se3

    PubMed Central

    Huang, Hui; Gu, Juanjuan; Tan, Min; Wang, Qinglong; Ji, Ping; Hu, Xueyou

    2017-01-01

    Research on possible topological superconductivity has grown rapidly over the past several years, from fundamental studies to the development of next generation technologies. Recently, it has been reported that the SrxBi2Se3 exhibits superconductivity with topological surface state, making this compound a promising candidate for investigating possible topological superconductivity. However, whether or not the topological surface state is robust against impurities is not clear in this system. Here we report a detailed investigation on the lattice structure, electronic and magnetic properties, as well as the topological superconducting properties of SrxBi2Se3−ySy samples. It is found that the superconducting transition temperature keeps nearly unchanged in all samples, despite of a gradual decrease of the superconducting shielding volume fraction with increasing S doping content. Meanwhile, the Shubnikov-de Hass oscillation results of the SrxBi2Se3−ySy samples reveal that the topological surface states are destroyed in S doped samples, suggesting the topological character is degraded by nonmagnetic dopants. PMID:28358021

  6. Ferromagnetism in vanadium doped thin films of a topological insulator Bi2Te3

    NASA Astrophysics Data System (ADS)

    Zhao, Lukas; Chen, Zhiyi; Korzhovska, Inna; Deng, Haiming; Raoux, Simone; Jordan-Sweet, Jean; Sarachik, Myriam; Krusin-Elbaum, Lia

    2012-02-01

    Recent first-principle calculations predict a new class of ferromagnetic systems that are distinctly different from the conventional dilute magnetic semiconductors. A novel ferromagnetic topological insulator (ferro-TI) state can be obtained when topological insulator are doped with certain transition metal elements. In the the quasi-2D limit these ferro-TIs are expected to support a quantized anomalous Hall effect. Here we report on electrical and magnetic characterization of vanadium doped thin (˜50 nm) films of a topological insulator Bi2Te3. Films were grown by rf sputtering on S3N4/Si substrates with lithographically pre-patterned contact pads. Low-temperature in-plane and Hall resistivity measurements were performed in magnetic fields up to 5 T fields. We find that below 100 K, V-doped films display negative linear magnetoresistance, which at lower temperatures becomes hysteretic. Hall resistivity is also hysteretic, suggesting an unusual ferromagnetic ordering below 10 K. Moreover, V-doping turns the p-type conduction in as-grown films into n-type. The doping and thickness dependence of these effects will be discussed.

  7. Transition metal-doped BiFeO3 nanofibers: forecasting the conductivity limit.

    PubMed

    Xu, Qiang; Sobhan, Mushtaq; Anariba, Franklin; Ho, Jeffrey Weng Chye; Chen, Zhong; Wu, Ping

    2014-11-14

    We investigate the limiting electrical conductivity of BiFeO3 (BFO) nanofibers via first-principles modelling and experiments. Based on a semi-empirical approach, all transition metals are first screened for their suitability to form an acceptor in BFO. The resultant candidates (e.g., Ni, Cu and Ag) are further studied by more sophisticated electronic structure theory and experiments. Accordingly, a systematic approach in forecasting the electrical conduction in BFO nanofibers is established. The calculated results show that Ag(+) cations prefer substitutions of Bi(3+) while Ni(2+) and Cu(2+) prefer substitution of Fe(3+) sites to form acceptors. All three metals contribute to an increased overall hole concentration which may lead to a conductivity limit in BFO. These predictions were confirmed consistently through the synthesis and electrical testing of Ni-, Cu- and Ag-doped BFO nanofibers. Finally, our results indicate that the conductivity limit is approached by Ni doping in BFO. The methodology presented here may be extended to search for the doping conductivity limits of other semiconductors of interest.

  8. Influence of Bi(3+)-doping on the magnetic and Mössbauer properties of spinel cobalt ferrite.

    PubMed

    Gore, Shyam K; Mane, Rajaram S; Naushad, Mu; Jadhav, Santosh S; Zate, Manohar K; Alothman, Z A; Hui, Biz K N

    2015-04-14

    The influence of Bi(3+)-doping on the magnetic and Mössbauer properties of cobalt ferrite (CoFe2O4), wherein the Fe(3+) ions are replaced by the Bi(3+) ions to form CoBixFe2-xO4 ferrites, where x = 0.0, 0.05, 0.1, 0.15 or 0.2, has been investigated. The structural and morphological properties of undoped and doped ferrites, synthesized chemically through a self-igniting sol-gel method, are initially screened using X-ray diffraction, scanning electron microscopy and Fourier transform infrared spectroscopy measurements. The changes in magnetic moment of ions, their coupling with neighboring ions and cation exchange interactions are confirmed from the Mössbauer spectroscopy analysis. The effect of Bi(3+)-doping on the magnetic properties of CoFe2O4 ferrite is examined from the vibrating sample magnetometry spectra. Saturation magnetization and coercivity values are increased initially and then decreased, as result of Bi(3+)-doping. The obtained results with improved saturation magnetization (from 26.36 to 44.96 emu g(-1)), coercivity (from 1457 to 1863 Oe) and remanence magnetization (from 14.48 to 24.63 emu g(-1)) on 0.1-0.15 mol Bi(3+)-doping of CoBixFe2-xO4 demonstrate the usefulness for magnetic recording and memory devices.

  9. Effect of Gd doping on structural, electrical and magnetic properties of BiFeO 3 electroceramic

    NASA Astrophysics Data System (ADS)

    Pradhan, S. K.; Roul, B. K.

    2011-10-01

    Room temperature multiferroic electroceramics of Gd doped BiFeO 3 monophasic materials have been synthesized adopting a slow step sintering schedule. Incorporation of Gd nucleates the development of orthorhombic grain growth habit without the appearance of any significant impurity phases with respect to original rhombohedral ( R 3 c ) phase of un-doped BiFeO 3 . It is observed that, the materials showed room temperature enhanced electric polarization as well as ferromagnetism when rare earth ions like Gd doping is critically optimized ( x =0.15) in the composition formula of Bi 1+2 x Gd 2 x /2 Fe 1-2 x O 3 . We believe that magnetic moment of Gd +3 ions in Gd doped BiFeO 3 tends to align in the same direction with respect to ferromagnetic component associated with the iron sub lattice. The dielectric constant as well as loss factor shows strong dispersion at lower frequencies and the value of leakage current is greatly suppressed with the increase in concentration of x in the above composition. Addition of excess bismuth and Gd ( x =0.1 and 0.15) caused structural transformation as well as compensated bismuth loss during high temperature sintering. Doping of Gd in BiFeO 3 also suppresses spiral spin modulation structure, which can change Fe-O-Fe bond angle or spin order resulting in enhanced ferromagnetic property.

  10. The effect of Mo doping on the charge separation dynamics and photocurrent performance of BiVO4 photoanodes.

    PubMed

    Pattengale, Brian; Huang, Jier

    2016-12-07

    Doping with electron-rich elements in BiVO4 photoanodes has been demonstrated as a desirable approach for improving their carrier mobility and charge separation efficiency. However, the effect of doping and dopant concentration on the carrier dynamics and photoelectrochemical performance remains unclear. In this work, we examined the effects of Mo doping on the charge separation dynamics and photocurrent performance in BiVO4 photoanodes. We show that the photocurrent of BiVO4 photoanodes increases with increasing concentration of the Mo dopant, which can be attributed to both the improved carrier mobility resulting from increased electron density and charge separation efficiency due to the diminishing of trap states upon Mo doping. The effect of doping on the electronic structure, carrier dynamics and photocurrent performance of BiVO4 photoanodes resulting from W and Mo dopants was also compared and discussed in this study. The knowledge gained from this work will provide important insights into the optimization of the carrier mobility and charge separation efficiency of BiVO4 photoanodes by controlling the dopants and their concentrations.

  11. FABRICATION AND PHOTOCATALYTIC PROPERTIES OF TiO2 NANOFILMS CO-DOPED WITH Fe3+ AND Bi3+ IONS

    NASA Astrophysics Data System (ADS)

    Gao, Qiongzhi; Liu, Xin; Liu, Wei; Liu, Fang; Fang, Yueping; Zhang, Shiying; Zhou, Wuyi

    2016-12-01

    In this work, the titanium dioxide (TiO2) nanofilms co-doped with Fe3+ and Bi3+ ions were successfully fabricated by the sol-gel method with dip-coating process. Methylene blue was used as the target degradation chemical to study the photocatalytic properties affected by different doping contents of Fe3+ and Bi3+ ions. The samples were characterized by X-ray diffractometer (XRD), scanning electron microscopy (SEM) and infrared (IR) spectroscopy. The results indicated that both pure TiO2 nanofilms and single-doped samples possessed the photocatalytic activity in degradation of methylene blue. However, when the nanofilms co-doped with Fe3+ and Bi3+ ions were fabricated at the molar ratio of 3:1 (Fe3+:Bi3+), they exhibited the best photocatalytic activity after the heat treatment at 500∘C for 2h. The wettability property test indicated that the TiO2 nanofilms co-doped with Fe3+ and Bi3+ ions in the molar ratio 3:1 owned an excellent hydrophilic property.

  12. Passively Q-switched Erbium-doped and Ytterbium-doped fibre lasers with topological insulator bismuth selenide (Bi2Se3) as saturable absorber

    NASA Astrophysics Data System (ADS)

    Haris, H.; Harun, S. W.; Muhammad, A. R.; Anyi, C. L.; Tan, S. J.; Ahmad, F.; Nor, R. M.; Zulkepely, N. R.; Arof, H.

    2017-02-01

    This paper portrays a simple Q-switched Erbium-doped fibre (EDF) and Ytterbium doped fibre (YDF) lasers by using topological insulator (TI) Bismuth Selenide (Bi2Se3) as saturable absorber. The modulation depth of the fabricated Bi2Se3 is about 39.8% while its saturating intensity is about 90.2 MW/cm2. By depositing the TI Bi2Se3 SA onto fibre ferrules and incorporate it inside the proposed cavity, a stable Q-switching operation was achieved at 1 μm and 1.5 μm. The fabricated Bismuth Selenide (Bi2Se3) as saturable absorber (SA) is a broadband SA where it offers a compact and low cost fabrication which is beneficial in various photonic applications.

  13. A comprehensive investigation of tetragonal Gd-doped BiVO4 with enhanced photocatalytic performance under sun-light

    NASA Astrophysics Data System (ADS)

    Luo, Yangyang; Tan, Guoqiang; Dong, Guohua; Ren, Huijun; Xia, Ao

    2016-02-01

    Tetragonal Gd-doped BiVO4 having enhanced photocatalytic activity have been synthesized by a facile microwave hydrothermal method. The structural analysis indicates that Gd doping can induce the phase transition from monoclinic to tetragonal BiVO4. The reaction results in precursor solutions imply that tetragonal GdVO4 seeds as crystal nucleus are the original and determined incentives to force the formation of tetragonal Gd-BiVO4. The influences of the surface defect, band structure, and BET surface area on the improved photocatalytic activities of tetragonal Gd-doped BiVO4 are investigated systematically. The results demonstrate that the more surface oxygen deficiencies as active sites and the excellent mobility and separation of photogenerated electrons and holes are beneficial to the enhancement of the photocatalytic performance of tetragonal Gd-BiVO4. The RhB photodegradation experiments indicate that the contribution of high photocatalytic activities under simulated sun-light is mainly from UV-light region due to the tetragonal structure feature. The best photocatalytic performance is obtained for tetragonal 10 at% Gd-BiVO4, of which the RhB degradation rate can reach to 96% after 120 min simulated sun-light irradiation. The stable tetragonal Gd-BiVO4 with efficient mineralization will be a promising photocatalytic material applied in water purification.

  14. Ultrahigh sensitivity of anomalous Hall effect sensor based on Cr-doped Bi2Te3 topological insulator thin films

    DOE PAGES

    Ni, Y.; Zhang, Z.; Nlebedim, I. C.; ...

    2016-07-01

    Anomalous Hall effect (AHE) was recently discovered in magnetic element-doped topological insulators (TIs), which promises low power consumption and high efficiency spintronics and electronics. This discovery broadens the family of Hall sensors. In this paper, AHE sensors based on Cr-doped Bi2Te3 topological insulator thin films are studied with two thicknesses (15 and 65 nm). It is found, in both cases, that ultrahigh Hall sensitivity can be obtained in Cr-doped Bi2Te3. Hall sensitivity reaches 1666 Ω/T in the sensor with the 15 nm TI thin film, which is higher than that of the conventional semiconductor HE sensor. The AHE of 65more » nm sensors is even stronger, which causes the sensitivity increasing to 2620 Ω/T. Furthermore, after comparing Cr-doped Bi2Te3 with the previously studied Mn-doped Bi2Te3 TI Hall sensor, the sensitivity of the present AHE sensor shows about 60 times higher in 65 nm sensors. Furthermore, the implementation of AHE sensors based on a magnetic-doped TI thin film indicates that the TIs are good candidates for ultrasensitive AHE sensors.« less

  15. Low-temperature growth of near-infrared luminescent Bi-doped SiO(x)N(y) thin films.

    PubMed

    Fujii, Minoru; Morimoto, Satoshi; Kitano, Shohei; Imakita, Kenji; Qiu, Jianrong; Sun, Hong-Tao

    2013-10-15

    Bi-doped siliconoxynitride (SiON:Bi) thin films were prepared by a sputtering method and the photoluminescence (PL) properties were studied. Without any thermal treatments, broad Bi-related luminescence was observed in the near-infrared (NIR) range. The luminescence efficiency depended strongly on the film composition. It was found that N atoms play a crucial role for the formation of Bi NIR luminescence centers. The effect of annealing on the luminescence efficiency was also studied. The optimum annealing temperature to have the largest number of Bi NIR luminescence centers depended strongly on the film composition and it was lower for films with lower N concentration. The PL excitation spectra revealed that two different Bi NIR luminescence centers exist in the films.

  16. Oxygen deficiencies in the F-doped Bi[sub 2[minus][ital x

    SciTech Connect

    Tang, Z.; Wang, S.J. ); Gao, X.H. )

    1994-08-01

    Positron annihilation lifetime spectra were measured on F-doped Bi(Pb) 2:2:2:3 superconductors as a function of F content and analyzed by using a numerical Laplace inversion method. While the nominal fluorine content increases, it was clearly observed that (1) the average positron annihilation rate is decreased continuously, (2) the width of the positron-annihilation-rate distribution (ARD) is increased, (3) the region of the ARD becomes wider and exends down towards a lower annihilation rate. The increase in [ital T][sub [ital c

  17. Induced Superconductivity In Bi2 Se3 Nanostructures By Anneal Doping Of Palladium

    NASA Astrophysics Data System (ADS)

    Mlack, Jerome T.; Rahman, Atikur; Drichko, Natalia; Markovic, Nina

    Utilizing thermal annealing at temperatures in excess of 100 Celsius we induce superconductivity in Bi2Se3 by palladium doping. Changes in the material structure are analyzed using a combination of AFM, optical microscopy and Raman spectroscopy. The absorption of Pd results in superconductivity in the material with a transition temperature below 1K. The differential conductance as a function of temperature and magnetic field reveals multiple transitions in the material at several applied currents. This work was supported under the National Science Foundation Grant Nos. DGE-1232825 (J.T.M.) and DMR-1106167.

  18. The effect of K-na co-doping on the formation and particle size of Bi-2212 phase

    NASA Astrophysics Data System (ADS)

    Kır, M. Ebru; Özkurt, Berdan; Aytekin, M. Ersin

    2016-06-01

    Superconducting K-Na co-doped Bi2Sr2KxCa1Cu1.75Na0.25Oy (x=0, 0.05, 0.1 and 0.25) ceramics are prepared by a solid-state reaction method. It is clearly determined from XRD data that the characteristic peaks of Bi-2212 phase are observed in all samples. The resistivity measurements show that Tc (onset) values is gradually increasing as K content is increased. It is also found that K-Na co-doping influence the grain sizes for Bi-2212 phase significantly. The critical current densities as a function of magnetic field have been calculated from M-H hysteresis loops of samples according to Bean's critical model, indicating that K-Na co-doping cause higher Jc values than the pure ones.

  19. Study of optical properties and effective three-photon absorption in Bi-doped ZnO nanoparticles

    NASA Astrophysics Data System (ADS)

    Karthikeyan, B.; Sandeep, C. S. Suchand; Philip, Reji; Baesso, M. L.

    2009-12-01

    In this paper we report the linear and nonlinear optical properties of Bi-doped ZnO nanoparticles. Bi-doped ZnO nanoparticles were prepared through the wet chemical method at room temperature. Optical absorption measurements show that the exciton peaks are situated at 272 and 368 nm, which are attributed to the n=2 and n=1 exciton states, respectively. Transmission electron microscopy measurements reveal the size and shape of the particles and energy dispersive X-ray measurements confirm the doping of Bi in ZnO. Steady state photoluminescence measurements show that the emission is composed of five peaks. Open aperture z-scan measurements done at 532 nm using 5 ns, 300 μJ laser pulses reveal nonlinear absorption which arises from an effective three-photon absorption process.

  20. Influence of Te doping on the dielectric and optical properties of InBi crystals grown by directional freezing

    NASA Astrophysics Data System (ADS)

    Ajayakumar, C. J.; Kunjomana, A. G.

    2014-05-01

    Stoichiometric pure and tellurium (Te) doped indium bismuthide (InBi) were grown using the directional freezing technique in a fabricated furnace. The X-ray diffraction profiles identified the crystallinity and phase composition. The surface topographical features were observed by scanning electron microscopy and atomic force microscopy. The energy dispersive analysis by X-rays was performed to identify the atomic proportion of elements. Studies on the temperature dependence of dielectric constant ( ɛ), loss tangent (tan δ), and AC conductivity ( σ ac) reveal the existence of a ferroelectric phase transition in the doped material at 403 K. When InBi is doped with tellurium (4.04 at%), a band gap of 0.20 eV can be achieved, and this is confirmed using Fourier transform infrared studies. The results thus show the conversion of semimetallic InBi to a semiconductor with the optical properties suitable for use in infrared detectors.

  1. Spin cycloid destruction in Pr doped BiFeO3 films studied by conversion-electron Mossbauer spectroscopy

    NASA Astrophysics Data System (ADS)

    Xiao, Renzheng; Pelenovich, Vasiliy O.; Fu, Dejun

    2013-07-01

    Crystalline Bi1-xPrxFeO3 films were fabricated on Si (100) substrates by sol-gel technique. X-ray diffraction revealed a decrease of lattice constants of the doped samples evidencing substitution of Bi by Pr ions. Ferromagnetism with low saturation magnetization Ms = 1-3 emu/cm3 of the films were observed by Vibrating sample magnetometry. Systematic change of Mossbauer parameters of the films with Pr doped concentration increase were obtained by Conversion-electron Mossbauer spectroscopy (CEMS). The results of both one- and two-sextet fittings of the CEMS spectra provide evidence for destruction of the spin cycloid in Pr-doped BiFeO3.

  2. Effect of Ti doping on high pressure behavior of BiMn{sub 2}O{sub 5}

    SciTech Connect

    Pandey, K. K. Poswal, H. K. Sharma, Surinder M.; Kumar, Ravi

    2014-04-24

    Our high pressure x-ray diffraction studies on BiMn{sub 1.5}Ti{sub 0.5}O{sub 5} show iso-structural phase transition above 12 GPa similar to the one observed in undoped BiMn{sub 2}O{sub 5}; however anisotropic compressional behavior is found to be more enhanced in the doped case. Unlike undoped system, an anomalous lattice expansion along c axis has been observed in BiMn{sub 1.5}Ti{sub 0.5}O{sub 5} above 12 GPa; whereas the b lattice parameter has been found to be more compressible as compared to BiMn{sub 2}O{sub 5}. As doping with Ti reduces the magnetic interactions among Mn ions, the observed changes are suggestive of having adverse magnetic implications in the observed iso-structural phase transition.

  3. Nanoclusters of CaSe in calcium-doped Bi2Se3 grown by molecular-beam epitaxy.

    PubMed

    Shang, Panju; Guo, Xin; Zhao, Bao; Dai, Xianqi; Bin, Li; Jia, Jinfeng; Li, Quan; Xie, Maohai

    2016-02-26

    In calcium (Ca) doped Bi2Se3 films grown by molecular beam epitaxy, nanoclusters of CaSe are revealed by high-angle annular dark field imaging and energy dispersive x-ray spectroscopy analysis using a scanning transmission electron microscope. As the interface between the ordinary insulator CaSe and topological insulator, Bi2Se3, can host topological nontrivial interface state, this represents an interesting material system for further studies. We show by first principles total energy calculations that aggregation of Ca atoms in Bi2Se3 is driven by energy minimization and a preferential intercalation of Ca in the van der Waals gap between quintuple layers of Bi2Se3 induces reordering of atomic stacking and causes an increasing amount of stacking faults in film. The above findings also provide an explanation of less-than-expected electrical carrier (hole) concentrations in Ca-doped samples.

  4. Growth of Nucleation Sites on Pd-doped Bi_2Sr_2Ca1 Cu_2O_8+δ

    NASA Astrophysics Data System (ADS)

    Kouzoudis, D.; Finnemore, D. K.; Xu, Ming; Balachandran

    1996-03-01

    Enviromental Scanning Electron Microscope has shown evidence that during the growth of Bi_2Sr_2Ca_2Cu_3O_10+δ from mixed powders of Pb-doped Bi_2Sr_2Ca_1Cu_2O_8+δ and other oxides, a dense array of hillocks or mesas grow at the interface between an Ag overlay and Pb doped Bi_2Sr_2Ca_1Cu_2O_8+δ grains. These hillocks develop a texture that looks like ''chicken pox'' during the ramp up to the reaction temperature starting at about 700^circ C and they are about 500 to 1000 nm across and are spaced at about 500 to 1000 nm. If there is no Ag, this texture does not develop. Preliminary measurments indicate that the hillocks are re-crystallization of (Bi,Pb)_2Sr_2Ca_1Cu_2O_8+δ and are definetely not a Pb rich phase

  5. Electrical Transport Properties of Mn doped Bi2Se3 Thin Films

    NASA Astrophysics Data System (ADS)

    Babakiray, Sercan; Johnson, Trent; Borisov, Pavel; Lederman, David

    2015-03-01

    Magnetic impurity doping in topological insulators manifest itself with a gap opening in the Dirac cone as a result of breaking the time reversal symmetry. Moreover, the magnetic impurities affect the structural and quantum transport properties of topological insulators by increasing the disorder and by changing the bulk charge carrier type, charge carrier density and Hall mobility. Here, we investigated the effect of Mn doping on the structural and electrical transport properties of Bi2-xMnxSe3 thin films which are 12 quintuple layers thick and grown on Al2O3 (0001) single crystal substrates via molecular beam epitaxy (MBE). Hikami-Larkin-Nagaoka (HLN) formalism was used to study the weak antilocalization (WAL). Increasing Mn doping concentration was found to increase the bulk charge carrier density and to decrease the Hall mobility. A decrease was also observed in the phase coherence length related to WAL as a function of Mn content x. Values of another WAL parameter, the pre-factor alpha, showed that the top and bottom surfaces were coupled through the bulk conducting channels. The temperature dependence of phase coherence length indicated the electrical transport was dominated by 2D electron-electron scattering for the undoped, and by bulk weak localization effects for the Mn doped samples, respectively.

  6. Flowerlike C-doped BiOCl nanostructures: Facile wet chemical fabrication and enhanced UV photocatalytic properties

    NASA Astrophysics Data System (ADS)

    Yu, Jiahui; Wei, Bo; Zhu, Lin; Gao, Hong; Sun, Wenjun; Xu, Lingling

    2013-11-01

    3D-flowerlike C-doped bismuth oxychloride (BiOCl) hierarchical structures have been synthesized through a facile, low temperature wet-chemical method using polyacrylamide (PAM) as both chelating and doping agents. The flowerlike products are composed of nanosheets, as verified by the scanning electron microscopy (SEM). The crystal structure and compositional characteristics were investigated by X-ray diffraction (XRD), Raman spectroscopy and X-ray photoelectron spectroscopy (XPS). Photocatalytic activities of C-doped BiOCl samples with different amounts of PAM adding were investigated by the degradation of methyl orange (MO) dye and colorless phonel contaminant under ultra-violet light irradiation. The as-prepared C-doped BiOCl exhibited much higher photocatalytic activity than the pure one. Moreover, the best performance of the photo-degradation was observed on the sample synthesized by 0.4 g PAM adding. The results show that C-doped BiOCl can be used as a promising candidate for water-purification.

  7. Strain-modulated ferromagnetism and band gap of Mn doped Bi2Se3

    PubMed Central

    Qi, Shifei; Yang, Hualing; Chen, Juan; Zhang, Xiaoyang; Yang, Yingping; Xu, Xiaohong

    2016-01-01

    The quantized anomalous Hall effect (QAHE) have been theoretically predicted and experimentally confirmed in magnetic topological insulators (TI), but dissipative channels resulted by small-size band gap and weak ferromagnetism make QAHE be measured only at extremely low temperature (<0.1 K). Through density functional theory calculations, we systemically study of the magnetic properties and electronic structures of Mn doped Bi2Se3 with in-plane and out-of-plane strains. It is found that out-of-plane tensile strain not only improve ferromagnetism, but also enlarge Dirac-mass gap (up to 65.6 meV under 6% strain, which is higher than the thermal motion energy at room temperature ~26 meV) in the Mn doped Bi2Se3. Furthermore, the underlying mechanisms of these tunable properties are also discussed. This work provides a new route to realize high-temperature QAHE and paves the way towards novel quantum electronic device applications. PMID:27374782

  8. Strain-modulated ferromagnetism and band gap of Mn doped Bi2Se3

    NASA Astrophysics Data System (ADS)

    Qi, Shifei; Yang, Hualing; Chen, Juan; Zhang, Xiaoyang; Yang, Yingping; Xu, Xiaohong

    2016-07-01

    The quantized anomalous Hall effect (QAHE) have been theoretically predicted and experimentally confirmed in magnetic topological insulators (TI), but dissipative channels resulted by small-size band gap and weak ferromagnetism make QAHE be measured only at extremely low temperature (<0.1 K). Through density functional theory calculations, we systemically study of the magnetic properties and electronic structures of Mn doped Bi2Se3 with in-plane and out-of-plane strains. It is found that out-of-plane tensile strain not only improve ferromagnetism, but also enlarge Dirac-mass gap (up to 65.6 meV under 6% strain, which is higher than the thermal motion energy at room temperature ~26 meV) in the Mn doped Bi2Se3. Furthermore, the underlying mechanisms of these tunable properties are also discussed. This work provides a new route to realize high-temperature QAHE and paves the way towards novel quantum electronic device applications.

  9. Atomic-level structural and chemical analysis of Cr-doped Bi2Se3 thin films

    NASA Astrophysics Data System (ADS)

    Ghasemi, A.; Kepaptsoglou, D.; Collins-McIntyre, L. J.; Ramasse, Q.; Hesjedal, T.; Lazarov, V. K.

    2016-05-01

    We present a study of the structure and chemical composition of the Cr-doped 3D topological insulator Bi2Se3. Single-crystalline thin films were grown by molecular beam epitaxy on Al2O3 (0001), and their structural and chemical properties determined on an atomic level by aberration-corrected scanning transmission electron microscopy and electron energy loss spectroscopy. A regular quintuple layer stacking of the Bi2Se3 film is found, with the exception of the first several atomic layers in the initial growth. The spectroscopy data gives direct evidence that Cr is preferentially substituting for Bi in the Bi2Se3 host. We also show that Cr has a tendency to segregate at internal grain boundaries of the Bi2Se3 film.

  10. Optimization of excess Bi doping to enhance ferroic orders of spin casted BiFeO{sub 3} thin film

    SciTech Connect

    Gupta, Surbhi; Gupta, Vinay; Tomar, Monika; James, A. R.; Pal, Madhuparna; Guo, Ruyan; Bhalla, Amar

    2014-06-21

    Multiferroic Bismuth Ferrite (BiFeO{sub 3}) thin films with varying excess bismuth (Bi) concentration were grown by chemical solution deposition technique. Room temperature multiferroic properties (ferromagnetism, ferroelectricity, and piezoelectricity) of the deposited BiFeO{sub 3} thin films have been studied. High resolution X-ray diffraction and Raman spectroscopy studies reveal that the dominant phases formed in the prepared samples change continuously from a mixture of BiFeO{sub 3} and Fe{sub 2}O{sub 3} to pure BiFeO{sub 3} phase and, subsequently, to a mixture of BiFeO{sub 3} and Bi{sub 2}O{sub 3} with increase in the concentration of excess Bi from 0% to 15%. BiFeO{sub 3} thin films having low content (0% and 2%) of excess Bi showed the traces of ferromagnetic phase (γ-Fe{sub 2}O{sub 3}). Deterioration in ferroic properties of BiFeO{sub 3} thin films is also observed when prepared with higher content (15%) of excess Bi. Single-phased BiFeO{sub 3} thin film prepared with 5% excess Bi concentration exhibited the soft ferromagnetic hysteresis loops and ferroelectric characteristics with remnant polarization 4.2 μC/cm{sup 2} and saturation magnetization 11.66 emu/g. The switching of fine spontaneous domains with applied dc bias has been observed using piezoresponse force microscopy in BiFeO{sub 3} thin films having 5% excess Bi. The results are important to identify optimum excess Bi concentration needed for the formation of single phase BiFeO{sub 3} thin films exhibiting the improved multiferroic properties.

  11. A new molecular precursor route for the synthesis of Bi-Y, Y-Nb and Bi-doped Y-Nb oxides at moderate temperatures

    SciTech Connect

    Bayot, D.A.; Dupont, A.M.; Devillers, Michel M.

    2007-03-15

    Yttrium-based multimetallic oxides containing bismuth and/or niobium were prepared by a method starting from pre-isolated stable water-soluble precursors which are complexes with the ethylenediaminetetraacetate ligand (edta). The cubic Bi{sub 1-} {sub x} Y {sub x} O{sub 1.5} (x=0.22, 0.25 and 0.3) and Y{sub 3}NbO{sub 7} oxides were obtained in a pure form in a range of moderate temperatures (600-650 deg. C). This preparation method also allowed to stabilize at room temperature, without quenching, the tetragonal YNbO{sub 4} oxide in a distorted form (T'-phase) by calcining the precursor at 800 deg. C. When heated up to 1000 deg. C, this metastable T'-phase transforms into the metastable 'high-temperature' T oxide, which converts on cooling down to room temperature into the thermodynamically stable monoclinic M oxide. Doping the YNbO{sub 4} oxide with Bi{sup 3+} cations (0.5% and 1% Bi with respect to total Bi+Y amount) led at 800 deg. C to a mixture of the T'-phase and the thermodynamically stable monoclinic one. At 900 deg. C, the almost pure monoclinic structure was obtained. - Graphical abstract: Bi-Y, Nb-Y and Bi-doped Nb-Y oxides were prepared by a molecular precursors method from pre-isolated water-soluble edta-based complexes. The cubic Bi{sub 1-} {sub x} Y {sub x} O{sub 1.5} and Y{sub 3}NbO{sub 7} oxides were obtained in a pure form at the moderate temperature of 650 deg. C. A distorted tetragonal YNbO{sub 4} phase was also stabilized at room temperature by calcining the precursor at 800 deg. C, and the pure corresponding monoclinic oxide has been obtained near 1100 deg. C.

  12. Optical Temperature Sensor Through Upconversion Emission from the Er3+ Doped SrBi8Ti7O27 Ferroelectrics

    NASA Astrophysics Data System (ADS)

    Zou, Hua; Wang, Xusheng; Hu, Yifeng; Zhu, Xiaoqing; Sui, Yongxing; Song, Zhitang

    2016-06-01

    Er doped SrBi8Ti7O27 (SBT) ferroelectric ceramics were prepared by a solid-state reaction technique. By Er doping, the intensive green upconversion emissions were recorded under 980 nm diode laser excitation with 20 mW. The fluorescence spectrum was investigated in the temperature range of 150-580 K. By the fluorescence intensity ratio technique, the green emission band was studied as a function of temperature with a maximum sensing sensitivity of 0.0028 at 510 K. These results indicate that the Er doped SBT ferroelectric ceramics are promising multifunctional sensing materials.

  13. Bi-Sn alloy catalyst for simultaneous morphology and doping control of silicon nanowires in radial junction solar cells

    SciTech Connect

    Yu, Zhongwei; Lu, Jiawen; Qian, Shengyi; Xu, Jun; Xu, Ling; Wang, Junzhuan; Shi, Yi; Chen, Kunji; Yu, Linwei E-mail: linwei.yu@polytechnique.edu

    2015-10-19

    Low-melting point metals such as bismuth (Bi) and tin (Sn) are ideal choices for mediating a low temperature growth of silicon nanowires (SiNWs) for radial junction thin film solar cells. The incorporation of Bi catalyst atoms leads to sufficient n-type doping in the SiNWs core that exempts the use of hazardous dopant gases, while an easy morphology control with pure Bi catalyst has never been demonstrated so far. We here propose a Bi-Sn alloy catalyst strategy to achieve both a beneficial catalyst-doping and an ideal SiNW morphology control. In addition to a potential of further growth temperature reduction, we show that the alloy catalyst can remain quite stable during a vapor-liquid-solid growth, while providing still sufficient n-type catalyst-doping to the SiNWs. Radial junction solar cells constructed over the alloy-catalyzed SiNWs have demonstrated a strongly enhanced photocurrent generation, thanks to optimized nanowire morphology, and largely improved performance compared to the reference samples based on the pure Bi or Sn-catalyzed SiNWs.

  14. Change of the Surface Structure by F Doping in BiS2-Based Superconductor CeO1-xFxBiS2

    NASA Astrophysics Data System (ADS)

    Demura, S.; Fujisawa, Y.; Machida, T.; Nagao, M.; Takano, Y.; Sakata, H.

    The observation of the surface structure on single crystalline CeO1-xFxBiS2 (x = 0.5, and 0.7) was performed successfully using a scanning tunneling microscopy. In the sample with x = 0.5, the square lattice composed of Bi atoms was observed. In addition, defects of the surface atoms and streaks were detected on the surface as in the case of NdO0.7F0.3BiS2 single crystal. With further F doping, the surface structure of sample with x = 0.7 showed a novel structure, termed by the "bone" structure. This result suggests that the F concentration affects the surface structure.

  15. Leakage current characteristics and Sm/Ti doping effect in BiFeO3 thin films on silicon wafers

    NASA Astrophysics Data System (ADS)

    Sun, Wei; Zhou, Zhen; Luo, Jin; Wang, Ke; Li, Jing-Feng

    2017-02-01

    The leakage current of BiFeO3 thin films can be reduced by Sm or Ti doping, and their codoping effect is significant. X-ray photoelectron spectroscopy revealed that the reduction in the leakage current can be ascribed to decreased Fe2+ ions and oxygen vacancies. The leakage mechanisms of pristine and doped BiFeO3 films were studied by analyzing their leakage current characteristics through curve fitting. It was found that Ti could stabilize the trapped carriers, while Sm might decrease the trap energy and contrarily benefit the excitation of the trapped carriers, which explains the greater effect of Ti in reducing the leakage current than that of Sm. The piezoelectric properties of Sm/Ti-codoped BiFe0.9Ti0.1O3 (BFO) films were comparable to those of pristine BFO owing to the enhanced electric breakdown despite their reduced remanent polarization.

  16. Synthetic conditions and their doping effect on {Beta}-K{sub 2}Bi{sub 8}Se{sub 13}.

    SciTech Connect

    Kyratsi, Th.; Kika, I.; Hatzikraniotis, E.; Paraskevopoulos, K. M.; Chrissafis, K.; Kanatzidis, M. G.

    2009-04-01

    In this work the synthetic conditions for K{sub 2}Bi{sub 8}Se{sub 13} and their effect on its thermoelectric properties were investigated. K{sub 2}Bi{sub 8}Se{sub 13} was prepared as a single phase using K{sub 2}Se and Bi{sub 2}Se{sub 3} as starting materials in a furnace or via a reaction using direct flame, followed by remelting or annealing. Seebeck coefficient measurements showed that the doping level in the material is sensitive to the synthetic conditions. Higher synthesis temperatures as well as the flame reaction technique followed by annealing gave more homogenous samples with higher Seebeck coefficient. IR optical spectroscopic measurements showed a wide range of doping level achieved among the different synthetic conditions. These findings suggest that synthetic conditions can act as a useful tool for the optimization of the thermoelectric properties of these materials.

  17. Thermoelectric Properties of Ag-Doped Bi2(Se,Te)3 Compounds: Dual Electronic Nature of Ag-Related Lattice Defects.

    PubMed

    Lu, Meng-Pei; Liao, Chien-Neng; Huang, Jing-Yi; Hsu, Hung-Chang

    2015-08-03

    Effects of Ag doping and thermal annealing temperature on thermoelectric transport properties of Bi2(Se,Te)3 compounds are investigated. On the basis of the comprehensive analysis of carrier concentration, Hall mobility, and lattice parameter, we identified two Ag-related interstitial (Agi) and substitutional (AgBi) defects that modulate in different ways the thermoelectric properties of Ag-doped Bi2(Se,Te)3 compounds. When Ag content is less than 0.5 wt %, Agi plays an important role in stabilizing crystal structure and suppressing the formation of donor-like Te vacancy (VTe) defects, leading to the decrease in carrier concentration with increasing Ag content. For the heavily doped Bi2(Se,Te)3 compounds (>0.5 wt % Ag), the increasing concentration of AgBi is held responsible for the increase of electron concentration because formation of AgBi defects is accompanied by annihilation of hole carriers. The analysis of Seebeck coefficients and temperature-dependent electrical properties suggests that electrons in Ag-doped Bi2(Se,Te)3 compounds are subject to a mixed mode of impurity scattering and lattice scattering. A 10% enhancement of thermoelectric figure-of-merit at room temperature was achieved for 1 wt % Ag-doped Bi2(Se,Te)3 as compared to pristine Bi2(Se,Te)3.

  18. Effects of Bi doping on structural and magnetic properties of double perovskite oxides Sr2FeMoO6

    NASA Astrophysics Data System (ADS)

    Lan, Yaohai; Feng, Xiaomei; Zhang, Xin; Shen, Yifu; Wang, Ding

    2016-08-01

    A new series of double perovskite compounds Sr2 - δBixFeMoO6 have been synthesized by solid-state reaction. δ refers to the nominal doping content of Bi (δ = 0, 0.1, 0.2, 0.3, 0.4, 0.5), while the Bi content obtained by the Rietveld refinement is x = 0, 0.01, 0.05, 0.08, 0.10 and 0.12. Their crystal structure and magnetic properties are investigated. Rietveld analysis of the room temperature XRD data shows all the samples crystallize in the cubic crystal structure with the space group Fm 3 ‾ m and have no phase transition. SEM images show that substituted samples present a denser microstructure and bigger grains than Sr2FeMoO6, which is caused by a liquid sintering process due to the effumability of Bi. The unit cell volume increases with augment of Bi3+ concentration despite the smaller ionic radius Bi3+ compared with the Sr2+, which is attributed to the electronic effect. The degree of Fe/Mo order (η) increases first and then decreases to almost disappearance with augment of Bi doping, which is the result of contribution from electronic effect. Calculated saturation magnetization Ms(3) according to our phase separation likeness model matches well with the experimental ones. The observed variations of magnetoresistance (MR) are consistent with the Fe/Mo order (η) due to the internal connection with anti-site defect (ASD).

  19. Electronic structure of a superconducting topological insulator Sr-doped Bi{sub 2}Se{sub 3}

    SciTech Connect

    Han, C. Q.; Chen, W. J.; Zhu, Fengfeng; Yao, Meng-Yu; Li, H.; Li, Z. J.; Wang, M.; Gao, Bo F.; Guan, D. D.; Liu, Canhua; Qian, Dong Jia, Jin-Feng; Gao, C. L.

    2015-10-26

    Using high-resolution angle-resolved photoemission spectroscopy and scanning tunneling microscopy/spectroscopy, the atomic and low energy electronic structure of the Sr-doped superconducting topological insulators (Sr{sub x}Bi{sub 2}Se{sub 3}) was studied. Scanning tunneling microscopy shows that most of the Sr atoms are not in the van der Waals gap. After Sr doping, the Fermi level was found to move further upwards when compared with the parent compound Bi{sub 2}Se{sub 3}, which is consistent with the low carrier density in this system. The topological surface state was clearly observed, and the position of the Dirac point was determined in all doped samples. The surface state is well separated from the bulk conduction bands in the momentum space. The persistence of separated topological surface state combined with small Fermi energy makes this superconducting material a very promising candidate for the time reversal invariant topological superconductor.

  20. Tc enhancement of excess Sr-doped Bi-2223 oxides by control of oxygen content

    NASA Astrophysics Data System (ADS)

    Miura, N.; Sakata, F.; Shimizu, Y.; Deshimaru, Y.; Yamazoe, N.

    1994-12-01

    The superconducting properties of excess Sr-doped 2223 phase samples, Bi 1.84Pb 0.34Sr 1.91+xCa 2.03Cu 3.06O y ( x=0.1, 0.3, 0.5, 1.0, 1.5), were examined. All the oxides as-prepared showed almost the same Tc of 109∼110 K, After heat-treatment in He at 600 °C for 3h, however, Tc increased up to 114∼115 K for the oxides with x=0.3∼, and decreased down to 102∼106 K for x=0∼0.1. The oxygen contents of the oxides as determined by iodometry increased with increasing x and slightly decreased with the heat-treatment in He. The heat treatment also brough about small increases in lattice constant of c-axis.

  1. Electromagnetic Characterization of YBa2Cu3O7-Delta Thin Films with Calcium Doping for Bi-Crystal Grain Boundary Conductivity Enhancement (Postprint)

    DTIC Science & Technology

    2008-02-08

    boundary of a vicinal and donor- doped 5 SrTiO3 bi-crystal results in a depletion zone ∼200 nm wide, with the interface potential at the middle of the...AFRL-RZ-WP-TP-2012-0146 ELECTROMAGNETIC CHARACTERIZATION OF YBa2Cu3O7−δ THIN FILMS WITH CALCIUM DOPING FOR BI-CRYSTAL GRAIN BOUNDARY...WITH CALCIUM DOPING FOR BI-CRYSTAL GRAIN BOUNDARY CONDUCTIVITY ENHANCEMENT (POSTPRINT) 5a. CONTRACT NUMBER In-house 5b. GRANT NUMBER 5c

  2. Improving of the electrical and magnetic properties of BiFeO{sub 3} by doping with yttrium

    SciTech Connect

    Ilić, Nikola I.; Bobić, Jelena D.; Stojadinović, Bojan S.; Džunuzović, Adis S.; Petrović, Mirjana M. Vijatović; Dohčević-Mitrović, Zorana D.; Stojanović, Biljana D.

    2016-05-15

    Bismuth ferrite is one of the most promising multiferroic materials, and the main barriers for exploiting all of its specific properties are difficulties in obtaining pure, high resistive material with nanosized grains. Doping of BiFeO{sub 3} with different transition metals and rare earth elements is often used way for overcoming these obstacles. Yttrium doped bismuth ferrite, Bi{sub 1−x}Y{sub x}FeO{sub 3} (x = 0; 0.01; 0.03; 0.05; 0.1), was prepared by auto-combustion method. X-ray diffraction patterns and Raman results showed that partial phase transition from rhombohedral to orthorhombic structure took place at around 10 mol% of Y. Effect of Y doping on microstructure was studied from SEM micrographies, showing the reduction of grain size in doped samples. Electrical measurements showed continuous improvement of resistivity with Y doping, whereas the values of saturation and remnant polarizations exhibit maximums at around 5 mol% of Y. Yttrium doping also enhanced magnetic properties, leading to weak ferromagnetism.

  3. XRD and XANES study of some Cu-doped MnBi materials

    NASA Astrophysics Data System (ADS)

    Mishra, Ashutosh; Patil, Harsha

    2016-10-01

    High purity MnBi low temperature phase has been prepared and analyzed using X- ray diffraction (XRD) and X-ray absorption near edge structure (XANES) measurements. The X-ray diffraction measurements were carried out using Bruker D8 Advance X-ray diffractometer. The X-rays were produced using a sealed tube and the wavelength of X-ray was 154 nm (Cu K-alpha). and X-rays were detected using a fast counting detector based on Silicon strip technology (Bruker LynxEye detector)[1]. and the X-ray absorption spectra has emerged as a powerful technique for local structure determination, which can be applied to any type of material. The X-ray absorption measurements of two Cu-doped MnBi alloys have been performed at the recently developed BL-8 Dispersive EXAFS beam line at 2.5 GeV Indus-2 synchrotron at RRCAT, Indore, India[2]. The X-ray absorption near edge structure (XANES) data obtained has been processed using data analysis program Athena. The energies of the K absorption edge, chemical shifts, edge-widths, shifts of the principal absorption maximum in the alloys have been determined.

  4. Y3Fe5O12/Na,Bi,Sr-doped PZT particulate magnetoelectric composites

    NASA Astrophysics Data System (ADS)

    Lisnevskaya, I. V.; Bobrova, I. A.; Lupeiko, T. G.; Agamirzoeva, M. R.; Myagkaya, K. V.

    2016-05-01

    Magnetoelectric (ME) composites of Na, Bi, Sr substituted lead zirconate titanate (PZT) and yttrium iron garnet having representative formula (100-x) wt% Na,Bi,Sr-doped PZT (PZTNB-1)+x wt% Y3Fe5O12 (YIG) with x=10-90 were manufactured using powdered components obtained through sol-gel processes. It is shown that the decrease in sintering temperature provided by the use of finely dispersed PZTNB-1 and YIG powders allows to significantly reduce content of fluorite-like foreign phase based on zirconium oxide, which forms due to the interfacial interaction during heat treatment and becomes stabilized by yttrium oxide. Connectivity has considerable effect on the value of ME coefficient of composite ceramics. With the same x value, ΔE/ΔH characteristic decreases when changing from 0-3-type structured composites (PZT grains embedded in ferrite matrix) to 3-3-(interpenetrating network of two phases) and especially 3-0-type samples (YIG grains embedded in PZT matrix); in the last case this can be attributed to the substrate clamping effect when ferrite grains are clamped with piezoelectric matrix. ΔE/ΔH value of 0-3 composites with x=40-60 wt% was found to be ∼1.6 mV/(cm Oe).

  5. AC impedance spectroscopy and conductivity studies of Dy doped Bi4V2O11 ceramics

    NASA Astrophysics Data System (ADS)

    Bag, Sasmitarani; Das, Parthasarathi; Behera, Banarji

    2017-03-01

    The ac impedance and conductivity properties of Dy doped Bi4V2 - x Dy x O11 (x = 0.05, 0.10, 0.15 and 0.20) ceramics prepared by solid-state reaction technique, in a wide frequency range at different temperatures have been studied. All the samples exhibited β-type phase orthorhombic structure at room temperature. The Nyquist plot confirmed the presence of both grain and grain boundary effects for all Dy doped samples. Double relaxation behavior was also observed. The grain and grain boundary resistance decreases with rise in temperature for all the concentration and exhibits a typical negative temperature co-efficient of resistance (NTCR) behavior. An analysis of the electric modulus suggests the possible hopping mechanism for electrical transport processes of all the materials. The ac conductivity spectrum obeys Jonscher's universal power law. DC conductivity of the materials were also studied and values of the activation energy found to be 0.40, 0.49, 0.73 and 0.78 eV for the compositions x = 0.05, 0.10, 0.15 and 0.20, respectively, at different temperatures (150-375 °C).

  6. Doping of BiScO3-PbTiO3 Ceramics for Enhanced Properties

    NASA Technical Reports Server (NTRS)

    Sehirlioglu, Alp; Sayir, Ali; Dynys, Fred

    2008-01-01

    High-temperature piezoelectrics are a key technology for aeronautics and aerospace applications such as fuel modulation to increase the engine efficiency and decrease emissions. The principal challenge for the insertion of piezoelectric materials is the limitation on upper use temperature which is due to low Curie-Temperature (T(sub c) and increasing electrical conductivity. BiScO3 -PbTiO3 (BS-PT) system is a promising candidate for improving the operating temperature for piezoelectric actuators due to its high TC (>400 C). Effects of Zr and Mn doping of the BS-PT ceramics have been studied and all electrical and electromechanical properties for Sc-deficient and Ti-deficient BS- PT ceramics are reported as a function of electrical field and temperature. Donor doping with Zr and Mn (in Sc deficient compositions) increased the DC-resistivity and decreased tan at all temperatures. Resulting ceramics exhibited saturated hysteresis loops with low losses and showed no dependence on the applied field (above twice the coercive field) and measurement frequency.

  7. The effects of Gd3+ doping on the physical structure and photocatalytic performance of Bi2MoO6 nanoplate crystals

    NASA Astrophysics Data System (ADS)

    Yu, Changlin; Wu, Zhen; Liu, Renyue; He, Hongbo; Fan, Wenhong; Xue, Shuangshuang

    2016-06-01

    Gd3+ doped Bi2MoO6 nanoplate crystals were fabricated by solvothermal combined calcination method. The effects of Gd3+ doping with different concentrations on the texture, crystal and optical properties of Bi2MoO6 were investigated by N2 physical adsorption, X-ray diffraction (XRD), scanning electron microscope (SEM), transmission electron microscope (TEM), Fourier transform infrared spectroscopy (FT-IR) and ultraviolet-visible diffuse reflection spectrum (UV-vis DRS), photoluminescence (PL) spectroscopy, and X-ray photoelectron spectroscopy (XPS). Under simulated solar light irradiation, the influences of Gd3+doping on photocatalytic activity of Bi2MoO6 were evaluated by photocatalytic degradation of Rhodamine B. The characterization results showed that with Gd3+ doping, a contraction of lattice and a decrease in crystallite size occurred. Meanwhile, an increase in surface area over Gd3+ doped Bi2MoO6 was observed. Moreover, Gd3+ doping could obviously enhance the visible light harvesting of Bi2MoO6 and promoted the separation of photogenerated electrons and holes. With optimum Gd3+(6 wt%) doping, Gd/Bi2MoO6 exhibited the best activity and stability in degradation of Rhodamine B.

  8. Conduction and magnetization improvement of BiFeO{sub 3} multiferroic nanoparticles by Ag{sup +} doping

    SciTech Connect

    Ahmed, M.A.; Mansour, S.F.; El-Dek, S.I.; Abu-Abdeen, M.

    2014-01-01

    Graphical abstract: HRTEM micrographs of the samples BiFeO{sub 3}. - Highlights: • Flash auto combustion method was successful in the preparation of Ag doped BiFeO{sub 3} in nanosize. • Ag doping results in hexagonal platelet shapes up to x = 0.10, at x ≥ 0.15 needle shape predominates. • Mixed conduction is obtained in Ag doped samples. • This nanometric multiferroic could be recommended as attractive cathode for solid oxide fuel cell. - Abstract: Nanometric multiferroic namely Ag doped (BiFeO{sub 3}) was synthesized using flash auto combustion technique and glycine as a fuel. Single phase rhombohedral–hexagonal perovskite structure was obtained by annealing at 550 °C, as determined from XRD. High resolution transmission electron microscope (HRTEM) clarifies the hexagonal platelet shape with size 17.9 nm. Maximum room temperature AC conductivity was obtained at Ag content of x = 0.10. The results of this study promote the use of such multiferroic in solid oxide fuel cell applications.

  9. Photoluminescence properties of Bi3+-doped YInGe2O7 phosphors under an ultraviolet irradiation

    NASA Astrophysics Data System (ADS)

    Tsai, Yeou-Yih; Chen, Hao-Long; Chai, Yin-Lai; Chang, Yee-Shin

    2013-01-01

    Yttrium indium germanate (YInGe2O7) doped with different concentrations of Bi3+ ion was synthesized using a vibrating milled solid-sate reaction. The compound was characterized and its optical properties were investigated. The precursor powders were heated at 1300 °C for 10 h to obtain good crystallinity with better luminescence. The XRD results show that all peaks can be attributed to the monoclinic YInGe2O7 phase when the Bi3+ ion concentration is increased up to 5 mol%. Furthermore, the 0.5 mol% of Bi3+ ion doping lead to obvious improvements in the surface morphology of the YInGe2O7 powder, because the Bi2O3 also acts as a flux reagent. In the PL studies, excitation under an ultraviolet (302 nm) irradiation shows that the (Y1-xBix)InGe2O7 phosphors display luminescence belonging to the 3P1 → 1S0 transition from 457 to 496 nm, and the CIE color coordinates changed from a blue to blueish region as the Bi3+ ion concentration increased from 0.2 mol% to 5 mol%. The time-resolved of the 3P1 → 1S0 transition presents a non-single exponential decay behavior, and the decay time decreases from 8 ms to 1 ms.

  10. Microstructure investigations of Yb- and Bi-doped Mg2Si prepared from metal hydrides for thermoelectric applications

    SciTech Connect

    Janka, Oliver; Zaikina, Julia V.; Bux, Sabah K.; Tabatabaifar, Hosna; Yang, Hao; Browning, Nigel D.; Kauzlarich, Susan M.

    2017-01-01

    Within the field of thermoelectric materials for energy conversion magnesium silicide, Mg2Si, is an outstanding candidate due to its low density, abundant constituents and low toxicity. However electronic and thermal tuning of the material is a required necessity to improve its Figure of Merit, zT. Doping of Yb via reactive YbH2 into the structure is performed with the goal of reducing the thermal conductivity. Hydrogen is released as a by-product at high temperatures allowing for facile incorporation of Yb into the structure. We report on the properties of Yb-and Bi-doped Mg2Si prepared with MgH2 and YbH2 with the focus on the synthetic conditions, and samples' microstructure, investigated by various electron microscopy techniques. Yb is found in the form of both Yb3Si5 inclusions and Yb dopant segregated at the grain boundary substituting for Mg. The addition of 1 at% Yb concentration reduced the thermal conductivity, providing a value of 30 mW/cm K at 800 K. In order to adjust carrier concentration, the sample is additionally doped with Bi. The impact of the microstructure on the transport properties of the obtained material is studied. Idealy, the reduction of the thermal conductivity is achieved by doping with Yb and the electronic transport is adjusted by doping with Bi. Large grain microstructure facilitates the electronic transport. However, the synthetic conditions that provide the optimized microstructure for electrical transport do not facilitate the additional Yb dopant incorporation. Therefore, the Yb and Bi containing sample with the optimized microstructure provides a zT=0.46 at 800 K.

  11. Microstructure investigations of Yb- and Bi-doped Mg2Si prepared from metal hydrides for thermoelectric applications

    NASA Astrophysics Data System (ADS)

    Janka, Oliver; Zaikina, Julia V.; Bux, Sabah K.; Tabatabaifar, Hosna; Yang, Hao; Browning, Nigel D.; Kauzlarich, Susan M.

    2017-01-01

    Within the field of thermoelectric materials for energy conversion magnesium silicide, Mg2Si, is an outstanding candidate due to its low density, abundant constituents and low toxicity. However electronic and thermal tuning of the material is a required necessity to improve its Figure of Merit, zT. Doping of Yb via reactive YbH2 into the structure is performed with the goal of reducing the thermal conductivity. Hydrogen is released as a by-product at high temperatures allowing for facile incorporation of Yb into the structure. We report on the properties of Yb- and Bi-doped Mg2Si prepared with MgH2 and YbH2 with the focus on the synthetic conditions, and samples' microstructure, investigated by various electron microscopy techniques. Yb is found in the form of both Yb3Si5 inclusions and Yb dopant segregated at the grain boundary substituting for Mg. The addition of 1 at% Yb concentration reduced the thermal conductivity, providing a value of 30 mW/cm K at 800 K. In order to adjust carrier concentration, the sample is additionally doped with Bi. The impact of the microstructure on the transport properties of the obtained material is studied. Idealy, the reduction of the thermal conductivity is achieved by doping with Yb and the electronic transport is adjusted by doping with Bi. Large grain microstructure facilitates the electronic transport. However, the synthetic conditions that provide the optimized microstructure for electrical transport do not facilitate the additional Yb dopant incorporation. Therefore, the Yb and Bi containing sample with the optimized microstructure provides a zT=0.46 at 800 K.

  12. Modification on upconversion luminescence of Er3 +-Yb3 + co-doped BiOCl semiconductor nanosheets through interaction between nanohost and doping lanthanide

    NASA Astrophysics Data System (ADS)

    Xu, Zuyuan; Li, Yongjin; Song, Yapai; Zhang, Xiangzhou; Hu, Rui; Qiu, Jianbei; Yang, Zhengwen; Song, Zhiguo

    2017-04-01

    We reported the upconversion luminescence (UCL) properties of Er3 +-Yb3 + co-doped BiOCl semiconductor nanosheets synthesized by hydrothermal method. Under 980 nm excitation, the red and green UCL of Er3 + ions were observed to be populated by a four and three-photon process in the case of absent or low concentration Yb3 + dopant. However, an increase of Yb3 + dopants show a completely opposite effect on the emission intensity of red and green one, accompanying with the change of upconverting process. It indicates that the red-shifting absorption edge of semiconductor and the super saturation UC processes involved with Yb3 + and Er3 + doping in BiOCl semiconductor nanosheets, respectively, are mainly responsible for the above UC phenomena.

  13. Enhanced thermoelectric figure of merit in strained Tl-doped Bi{sub 2}Se{sub 3}

    SciTech Connect

    Saeed, Y.; Singh, N.; Schwingenschlögl, U.

    2014-07-21

    We explain recent experimental findings on Tl-doped Bi{sub 2}Se{sub 3} by determining the electronic and transport properties by first-principles calculations and semi-classical Boltzmann theory. Though Tl-doping introduces a momentum-dependent spin-orbit splitting, the effective mass of the carriers is essentially not modified, while the band gap is reduced. Tl is found to be exceptional in this respect as other dopants modify the dispersion, which compromises thermoelectricity. Moreover, we demonstrate that only after Tl-doping strain becomes an efficient tool for enhancing the thermoelectric performance. A high figure of merit of 0.86 is obtained for strong p-doping (7 × 10{sup 20} cm{sup −3}, maximal power factor) at 500 K under 2% tensile strain.

  14. Enhancing visible light photocatalytic and photocharge separation of (BiO){sub 2}CO{sub 3} plate via dramatic I{sup −} ions doping effect

    SciTech Connect

    Liang, Lei; Cao, Jing; Lin, Haili; Guo, Xiaomin; Zhang, Meiyu; Chen, Shifu

    2016-08-15

    Highlights: • Novel I-(BiO){sub 2}CO{sub 3} was prepared by a facile chemical precipitation method. • I{sup −} ions impurity level located on the top of valence band of (BiO){sub 2}CO{sub 3}. • I{sup −} ions doping largely improved photocatalytic activity of I-(BiO){sub 2}CO{sub 3}. • I-(BiO){sub 2}CO{sub 3} displayed excellent photocharge separation efficiency. - Abstract: Novel I{sup −} ions doped (BiO){sub 2}CO{sub 3} (I-(BiO){sub 2}CO{sub 3}) photocatalysts were successfully synthesized via a facile chemical precipitation method. Under visible light (λ > 400 nm), I-(BiO){sub 2}CO{sub 3} displayed much higher activity for rhodamine B and dichlorophenol degradation than the undoped (BiO){sub 2}CO{sub 3}. The pseudo-first-order rate constant k{sub app} of RhB degradation over 15.0% I-(BiO){sub 2}CO{sub 3} was 0.54 h{sup −1}, which is 11.3 times higher than that of (BiO){sub 2}CO{sub 3}. The doped I{sup −} ions formed an impurity level on the top of valence band of (BiO){sub 2}CO{sub 3} and induced much more visible light to be absorbed. The enhanced photocurrent and surface photovoltage properties were detected, which strongly ensures the efficient separation of electrons and holes in I-(BiO){sub 2}CO{sub 3} system under visible light. It provides a facile way to improve the photocatalytic activity of the wide-band-gap (BiO){sub 2}CO{sub 3} via intense doping effect of I{sup −} ions.

  15. Structural transitions and enhanced ferroelectricity in Ca and Mn co-doped BiFeO3 thin films

    NASA Astrophysics Data System (ADS)

    Huang, Ji-Zhou; Shen, Yang; Li, Ming; Nan, Ce-Wen

    2011-11-01

    Ca and Mn co-doped BiFeO3 (BFO) thin films were fabricated on (111) Pt/Ti/SiO2/Si substrates via a simple solution approach. Enhanced ferroelectric properties were obtained in these Ca and Mn co-doped BFO films, e.g., large remnant polarization value (Pr ˜ 89 μC/cm2) and large remnant polarization to saturated polarization ratio (Pr/Ps ˜ 0.84) for Bi0.90Ca0.10Fe0.90Mn0.10O3 film. X-ray diffraction and Raman spectra of these films showed that B-site Mn doping causes substantial structural transition toward orthorhombic phase and A-site Ca doping facilitates an evolution to tetragonal phase with higher crystal symmetry. The structural transitions are in favor of enhanced ferroelectric properties in the BFO films. The approach of A and B site co-doping is proved to be effective in enhancing ferroelectric performance in multiferroic BFO films.

  16. Doping indium in β-Bi2O3 to tune the electronic structure and improve the photocatalytic activities: first-principles calculations and experimental investigation.

    PubMed

    Zhang, Junying; Dang, Wenqiang; Yan, Xingchen; Li, Min; Gao, Hong; Ao, Zhimin

    2014-11-14

    β-Bi2O3 is an efficient visible-light photocatalyst, however, it is unable to split water to produce hydrogen because of the positive conduction band minimum (CBM). In this paper, using hybrid density functional theory (DFT) calculations, we demonstrated that by doping indium in β-Bi2O3, the CBM shifts upward because of the orbital hybridization of Bi, In and O. In-doped β-Bi2O3 photocatalysts synthesized using a precipitation method can photocatalytically split water to produce hydrogen in experiments. In-doping also causes the morphological change of β-Bi2O3 from the hierarchical bulk assembled by nano-sheets to a spongy-like brick. Furthermore, In-doping induces the formation of electric dipoles along the tunnel in the crystal and decreases the effective mass of the electrons, favouring the separation of electron-hole pairs and electron mobility. Therefore, In-doped β-Bi2O3 has much better performance than that of the pristine β-Bi2O3 for photocatalytically decomposing methyl orange (MO) solution. This idea of simply incorporating an isovalent single element into photocatalysts to elevate the CBM and tune the local crystal structure is anticipated to be very useful for designing efficient photocatalysts.

  17. Effects of K-Doping on Thermoelectric Properties of Bi1-x K x CuOTe

    NASA Astrophysics Data System (ADS)

    An, Tae-Ho; Lim, Young Soo; Seo, Won-Seon; Park, Cheol-Hee; Yoo, Mi Duk; Park, Chan; Lee, Chang Hoon; Shim, Ji Hoon

    2016-09-01

    The effects of K-doping on the thermoelectric properties of Bi1-x K x CuOTe (x = 0 to 0.08) have been investigated. The compounds were synthesized by a one-step solid-state reaction method and consolidated by a spark plasma sintering process. As the amount of K-doping was increased, the electrical and thermal conductivities increased while the Seebeck coefficient decreased due to increasing hole concentration. A ZT value of 0.69 was obtained for the compound K0.01Bi0.99CuOTe at 700 K, to the best of our knowledge the highest value reported for this material system. The origin of this enhanced ZT is discussed in terms of the density of states effective mass estimated by a single parabolic band model and electronic structures calculated based on density functional theory.

  18. Pb- and Sm-doping effects on the vortex dynamics in Bi4O4S3 superconductor

    NASA Astrophysics Data System (ADS)

    Xie, L.; Tie, X. Y.; Zhang, H. G.

    2017-01-01

    Polycrystalline samples of Bi4O4S3, Bi3.94Pb0.06O4S3, and Bi3.94Sm0.06O4S3 were synthesized using a conventional solid-state reaction method. The vortex dynamics of these samples are studied and compared through measuring the critical current density (Jc) and magnetic relaxation. The estimated Jc value of three samples at temperature 2 K decreases with doping Pb and Sm elements due to the depression of the superconductivity. The normalized pinning force response with reduced field follows the Kramer scaling law f (h )∝ hp(1-h ) q , and the maximum of the reduced field (hmax) is observed at 0.31, 0.24, and 0.18 for Bi4O4S3, Bi3.94Pb0.06O4S3, and Bi3.94Sm0.06O4S3, respectively, indicating the presence of both surface and point pinning centers in these samples. The barrier energy estimated by the magnetic relaxation data depends on the field as a negative power law U0∝Hn and the magnetic relaxation rate S exhibits a considerable monotonic increase with magnetic field, which corroborates a plastic nature of the creep vortex dynamics in these compounds.

  19. Donor-doping and reduced leakage current in Nb-doped Na0.5Bi0.5TiO3

    NASA Astrophysics Data System (ADS)

    Li, Ming; Li, Linhao; Zang, Jiadong; Sinclair, Derek C.

    2015-03-01

    Low levels of so-called "donor-doping" in titanate-based perovskite oxides such as La for Ba, Sr, and Nb for Ti in (Ba, Sr)TiO3 can significantly reduce the resistivity of these typical (d0) dielectric materials and expand application areas to positive temperature coefficient resistors, thermoelectrics, conductive wafers as thin film substrates, and solid oxide fuel cell anode materials. Here, we show low levels of Nb-doping (≤1 at. %) on the Ti-site in the well-known lead-free piezoelectric perovskite oxide Na0.5Bi0.5TiO3 (NBT) produces completely different behaviours whereby much higher resistivity is obtained, therefore indicating a different donor-doping (substitution) mechanism. There is a switch in conduction mechanism from oxygen-ions in undoped NBT with an activation energy (Ea) of <0.9 eV to electronic (band gap) conduction in 0.5-1 at. % Nb-doped NBT with Ea ˜ 1.5-1.8 eV. This demonstrates the necessity of further systematic doping studies to elucidate the defect chemistry of NBT which is clearly different to that of (Ba,Sr)TiO3. This defect chemistry needs to be understood if NBT-based materials are going to be manufactured on a large scale for commercial applications. This study also illustrates different donor-doping mechanisms to exist within the family of d0 titanate-based perovskites.

  20. Hydrothermal fabrication of multi-functional Eu3+ and Tb3+ co-doped BiPO4: Photocatalytic activity and tunable luminescence properties

    NASA Astrophysics Data System (ADS)

    Wang, Yao; Huang, Hongwei; Quan, Chaoming; Tian, Na; Zhang, Yihe

    2016-01-01

    We demonstrated for first time the tunable photoluminescence (PL) properties and photocatalytic activity of the Tb3+ and Eu3+ co-doped BiPO4 assemblies. They are fabricated via a facile hydrothermal approach. Through co-doping of Eu3+ and Tb3+ ions and changing the doping ratio, the emission color of the co-doped BiPO4 phosphors can be tuned precisely from green to yellow and red. Meanwhile, a very efficient energy transfer from Tb3+ to Eu3+ can be observed. Fascinatingly, a warmwhite color has been realized in the co-doped sample by tuning the ratio of Tb3+/Eu3+ to a certain value as displayed in the CIE chromaticity diagram. The doped BiPO4 samples also exhibit significantly enhanced photocatalytic activity compared to the pristine BiPO4 pertaining to Rhodamine (RhB) degradation under UV light. This enhancement should be attributed to the trapping electron effect induced by ion doping that endows BiPO4 with high separation of photoinduced electron-hole pairs, thereby greatly promoting the photocatalytic reactivity. It was corroborated by the electrochemical impedance spectra (EIS). Moreover, the crystal structure, microstructure and optical properties of as-prepared samples were investigated in details.

  1. RVB states in doped band insulators from Coulomb forces: theory and a case study of superconductivity in BiS2 layers

    NASA Astrophysics Data System (ADS)

    Baskaran, G.

    2016-12-01

    Doped band insulators, HfNCl, WO3, diamond, Bi2Se3, BiS2 families, STO/LAO interface, gate doped SrTiO3, MoS2 and so on are unusual superconductors. With an aim to build a general theory for superconductivity in doped band insulators, we focus on the BiS2 family which was discovered by Mizuguchi et al in 2012. While maximum Tc is only ˜11 K in {{LaO}}1-{{x}}{{{F}}}{{x}}{{BiS}}2, a number of experimental results are puzzling and anomalous in the sense that they resemble high T c and unconventional superconductors. Using a two orbital model of Usui, Suzuki and Kuroki, we show that the uniform low density free Fermi sea in {{LaO}}{0,5}{{{F}}}0.5{{BiS}}2 is unstable towards formation of the next nearest neighbor Bi-S-Bi diagonal valence bond (charged -2e Cooper pair) and their Wigner crystallization. Instability to this novel state of matter is caused by unscreened nearest neighbor coulomb repulsions (V ˜ 1 eV) and a hopping pattern with sulfur mediated diagonal next nearest neighbor Bi-S-Bi hopping t’ ˜ 0.88 eV, as well as larger than nearest neighbor Bi-Bi hopping, t ˜ 0.16 eV. Wigner crystals of Cooper pairs quantum melt for doping around x = 0.5 and stabilize certain resonating valence bond states and superconductivity. We study a few variational RVB states and suggest that BiS2 family members are latent high Tc superconductors, but challenged by competing orders and the fragile nature of many body states sustained by unscreened Coulomb forces. One of our superconducting states has d XY symmetry and a gap. We also predict a 2d Bose metal or vortex liquid normal state, as charged -2e valence bonds survive in the normal state.

  2. Dielectric response of doped Bi12TiO20: Ru crystals in an alternating electric field

    NASA Astrophysics Data System (ADS)

    Avanesyan, V. T.; Paima, K. I.

    2016-08-01

    The results of examination of AC dependences of capacitance and dielectric loss tangent of sillenite Bi12TiO20 crystals doped with ruthenium on frequency are presented. Non-Debye dispersion of dielectric coefficients is found in the frequency interval of 5 × 102-105 Hz, and a resonance phenomenon is observed. Polarization processes in the studied samples are attributed to relaxators associated with metal-oxygen vacancies and structural elements incorporating 6 s 2 lone-pair electrons.

  3. Combined FTIR and SEM-EDS study of Bi2O3 doped ZnO-SnO2 ceramics.

    PubMed

    Ivetić, T; Nikolić, M V; Paraskevopoulos, K M; Pavlidou, E; Zorba, T T; Nikolić, P M; Ristić, M M

    2008-12-01

    The effects of Bi(2)O(3) addition on the phase composition, microstructure and optical properties of ZnO-SnO(2) ceramics were investigated. Starting powders of ZnO and SnO(2) were mixed in the molar ratio 2:1. After adding Bi(2)O(3) (1.0 mol.%) this mixture was mechanically activated for 10 min in a planetary ball mill, uniaxially pressed and sintered at 1300 degrees C for 2 h. Far-infrared reflection spectra were measured (100-1000 cm(-1)). To investigate the occurred differences in FTIR spectra, the Bi(2)O(3)-doped sample was examined more carefully with a Perkin-Elmer FTIR spectrometer (Perkin Elmer, Waltham, MA, USA) connected with a Perkin-Elmer FTIR microscope and itemized points of interest were also studied with SEM-EDS.

  4. Growth of nucleation sites on Pb-doped Bi2Sr2Ca1Cu2O8 + delta

    NASA Astrophysics Data System (ADS)

    Finnemore, D. K.; Xu, Ming; Kouzoudis, D.; Bloomer, T.; Kramer, M. J.; McKernan, Stuart; Balachandran, U.; Haldar, Pradeep

    1996-01-01

    In the growth of Bi2Sr2Ca2Cu3O10+δ from mixed powders of Pb-doped Bi2Sr2Ca1Cu2O8+δ and other oxides, it has been discovered that a dense array of hillocks or mesas grow at the interface between a Ag overlay and Pb-doped Bi2Sr2Ca1Cu2O8+δ grains during the ramp up to the reaction temperature. As viewed in an environmental scanning electron microscope, the Ag coated grains develop a texture that looks like ``chicken pox'' growing on the grains at about 700 °C. These hillocks are about 100 nm across and are spaced at about 500 to 1000 nm. If there is no Ag, this texture does not develop. Preliminary measurements indicate that the hillocks are a recrystallization of (Bi,Pb)2Sr2Ca1Cu2O8+δ, and are definitely not a Pb rich phase.

  5. The preparation of a Eu3+-doped ZnO bi-functional layer and its application in organic photovoltaics

    NASA Astrophysics Data System (ADS)

    Wu, Na; Luo, Qun; Qiao, Xvsheng; Ma, Chang-Qi

    2015-12-01

    Recently, spectra conversion has been used to minimize energy loss in photovoltaic devices. In this work, we explore the development of a novel Eu3+-doped ZnO bi-functional layer for use in organic solar cells. The bi-functional layer acts as both a spectra conversion and an electron transporting layer. Compared to conventional spectra conversion layers, it has a simpler device structure, is easier to fabricate, and has a wider spectrum-sensitized region. A series of Eu3+-doped ZnO nanocrystals were synthesized using the simple solution route. X-ray powder diffraction patterns (XRD), transmission electron microscopy (TEM), and UV-visible absorbance spectra were used to characterize the obtained ZnO nanocrystals. The results reveal that the size and bandgap of ZnO nanocrystals can be controlled through regulation of the doping concentration of Eu3+ ions. The energy transfer of ZnO → Eu3+ is observed by photoluminescence (PL) spectra. At a bandgap excitation of around 300-400 nm, a typical emission band from the Eu3+ is obtained. By employing the Eu3+- doped ZnO nanocrystals as a buffer layer in a P3HT:PC61BM bulk heterojunction device, the obtained performance is similar to the undoped ZnO device, indicating that the electrical properties of ZnO are not affected by Eu3+ doping. Due to the down-conversion energy transfer between ZnO and Eu3+, the external quantum efficiency of the ZnO:Eu3+ device at 300-400 nm is higher than that of the pure ZnO device, which subsequently leads to an increase in short circuit current density (J SC). This work proves that it is possible to improve the solar spectrum response in the ultraviolet region of organic solar cells effectively by incorporating the bi-functional layer.

  6. CdTe Feedstock Development and Validation: Cooperative Research and Development Final Report, CRADA Number CRD-08-00280

    SciTech Connect

    Albin, D.

    2011-05-01

    The goal of this work was to evaluate different CdTe feedstock formulations (feedstock provided by Redlen) to determine if they would significantly improve CdTe performance with ancillary benefits associated with whether changes in feedstock would affect CdTe cell processing and possibly reliability of cells. Feedstock also included attempts to intentionally dope the CdTe with pre-selected elements.

  7. Carrier-mediated ferromagnetism in the magnetic topological insulator Cr-doped (Sb,Bi)2Te3

    NASA Astrophysics Data System (ADS)

    Ye, Mao; Li, Wei; Zhu, Siyuan; Takeda, Yukiharu; Saitoh, Yuji; Wang, Jiajia; Pan, Hong; Nurmamat, Munisa; Sumida, Kazuki; Ji, Fuhao; Liu, Zhen; Yang, Haifeng; Liu, Zhengtai; Shen, Dawei; Kimura, Akio; Qiao, Shan; Xie, Xiaoming

    2015-11-01

    Magnetically doped topological insulators, possessing an energy gap created at the Dirac point through time-reversal-symmetry breaking, are predicted to exhibit exotic phenomena including the quantized anomalous Hall effect and a dissipationless transport, which facilitate the development of low-power-consumption devices using electron spins. Although several candidates of magnetically doped topological insulators were demonstrated to show long-range magnetic order, the realization of the quantized anomalous Hall effect is so far restricted to the Cr-doped (Sb,Bi)2Te3 system at extremely low temperature; however, the microscopic origin of its ferromagnetism is poorly understood. Here we present an element-resolved study for Cr-doped (Sb,Bi)2Te3 using X-ray magnetic circular dichroism to unambiguously show that the long-range magnetic order is mediated by the p-hole carriers of the host lattice, and the interaction between the Sb(Te) p and Cr d states is crucial. Our results are important for material engineering in realizing the quantized anomalous Hall effect at higher temperatures.

  8. Carrier-mediated ferromagnetism in the magnetic topological insulator Cr-doped (Sb,Bi)2Te3

    PubMed Central

    Ye, Mao; Li, Wei; Zhu, Siyuan; Takeda, Yukiharu; Saitoh, Yuji; Wang, Jiajia; Pan, Hong; Nurmamat, Munisa; Sumida, Kazuki; Ji, Fuhao; Liu, Zhen; Yang, Haifeng; Liu, Zhengtai; Shen, Dawei; Kimura, Akio; Qiao, Shan; Xie, Xiaoming

    2015-01-01

    Magnetically doped topological insulators, possessing an energy gap created at the Dirac point through time-reversal-symmetry breaking, are predicted to exhibit exotic phenomena including the quantized anomalous Hall effect and a dissipationless transport, which facilitate the development of low-power-consumption devices using electron spins. Although several candidates of magnetically doped topological insulators were demonstrated to show long-range magnetic order, the realization of the quantized anomalous Hall effect is so far restricted to the Cr-doped (Sb,Bi)2Te3 system at extremely low temperature; however, the microscopic origin of its ferromagnetism is poorly understood. Here we present an element-resolved study for Cr-doped (Sb,Bi)2Te3 using X-ray magnetic circular dichroism to unambiguously show that the long-range magnetic order is mediated by the p-hole carriers of the host lattice, and the interaction between the Sb(Te) p and Cr d states is crucial. Our results are important for material engineering in realizing the quantized anomalous Hall effect at higher temperatures. PMID:26582485

  9. Effect of (Nd, Ni) co-doped on the multiferroic and photocatalytic properties of BiFeO{sub 3}

    SciTech Connect

    Vanga, Pradeep Reddy; Mangalaraja, R.V.; Ashok, M.

    2015-12-15

    Highlights: • Sol–gel synthesis. • Saturation magnetization and ferroelectricity increases in Ni co-doped samples. • Conduction mechanism is different in Nd doped and (Nd, Ni) co-doped samples. • Samples show good photocatalytic activity in the presence of H{sub 2}O{sub 2}. - Abstract: Bi{sub 0.95}Nd{sub 0.05}Fe{sub 1−x}Ni{sub x}O{sub 3} (x = 0, 0.01, 0.03 and 0.05) samples are synthesized by solgel method. The phase and crystal structure of the samples are confirmed by X-ray diffraction studies, Rietveld refinement is performed to calculate the structural parameters. The reflectance spectra show bands in UV and visible region and the optical band gap is calculated using Kulbeka–Munk function. The magnetization and leakage current density are strongly influenced by doping. Different conduction mechanisms are observed in Nd doped and Ni co-doped samples. All the samples exhibit ferroelectric nature at various frequencies. Photocatalytic activities of the samples are determined by the degradation of methylene blue dye in the presence of visible light and H{sub 2}O{sub 2} which shows samples are good photo-Fenton like catalyst.

  10. Study of Ho-doped Bi{sub 2}Te{sub 3} topological insulator thin films

    SciTech Connect

    Harrison, S. E.; Collins-McIntyre, L. J.; Zhang, S. L.; Chen, Y. L.; Hesjedal, T.; Baker, A. A.; Figueroa, A. I.; Laan, G. van der; Kellock, A. J.; Pushp, A.; Parkin, S. S. P.; Harris, J. S.

    2015-11-02

    Breaking time-reversal symmetry through magnetic doping of topological insulators has been identified as a key strategy for unlocking exotic physical states. Here, we report the growth of Bi{sub 2}Te{sub 3} thin films doped with the highest magnetic moment element Ho. Diffraction studies demonstrate high quality films for up to 21% Ho incorporation. Superconducting quantum interference device magnetometry reveals paramagnetism down to 2 K with an effective magnetic moment of ∼5 μ{sub B}/Ho. Angle-resolved photoemission spectroscopy shows that the topological surface state remains intact with Ho doping, consistent with the material's paramagnetic state. The large saturation moment achieved makes these films useful for incorporation into heterostructures, whereby magnetic order can be introduced via interfacial coupling.

  11. Direct observation of charge order in underdoped and optimally doped Bi2(Sr,La ) 2CuO6 +δ by resonant inelastic x-ray scattering

    NASA Astrophysics Data System (ADS)

    Peng, Y. Y.; Salluzzo, M.; Sun, X.; Ponti, A.; Betto, D.; Ferretti, A. M.; Fumagalli, F.; Kummer, K.; Le Tacon, M.; Zhou, X. J.; Brookes, N. B.; Braicovich, L.; Ghiringhelli, G.

    2016-11-01

    Charge order in underdoped and optimally doped high-Tc superconductors Bi2Sr2 -xLaxCuO6 +δ (Bi2201) is investigated by Cu L3 edge resonant inelastic x-ray scattering. We have directly observed charge density modulation in the optimally doped Bi2201 at momentum transfer Q∥≃0.23 reciprocal lattice units, with smaller intensity and correlation length with respect to the underdoped sample. This demonstrates the short-range charge order in Bi2201 persists up to optimal doping, as in other hole-doped cuprates. We explored the nodal (diagonal) direction and found no charge order peak, confirming that charge density modulates only along the Cu-O bond directions. We measured the out-of-plane dependence of charge order, finding a flat response and no maxima at half integer L values. This suggests there is no out-of-plane phase correlation in single layer Bi2201, at variance from YBa2Cu3O6 +x and La2 -x(Ba,Sr)xCuO4 . Combining our results with data from the literature we assess that charge order in Bi2201 exists in a large doping range across the phase diagram, i.e., 0.07 ≲p ≲0.16 , demonstrating thereby that it is intimately entangled with the antiferromagnetic background, the pseudogap, and superconductivity.

  12. Micro-structure and Room-Temperature Thermoelectric Properties of Bi-Doped Antimony Zinc Thin Films Fabricated by Co-sputtering Method

    NASA Astrophysics Data System (ADS)

    Wei, Meng; Fan, Ping; Zheng, Zhuang-Hao; Luo, Jing-Ting; Liang, Guang-Xing; Zhong, Ai-Hua; Yin, Mei-Mei

    2016-11-01

    In this report, Bi-doped antimony zinc thin films were prepared on BK7 glass substrates by using direct magnetron co-sputtering technique. Bi was doped at the halfway point of deposition, and the doping contents were 2 at.%, 4 at.%, and 6 at.%, respectively. We present the micro-structural and room-temperature thermoelectric properties of Bi-doped Zn-Sb thin films in this paper. The maximum value of the Seebeck coefficient was found to be 300 μV/K with a Bi content of 6 at.%. This is one of the highest values of the Seebeck coefficient for Zn-Sb thin films deposited by direct magnetron co-sputtering. Carrier concentration is obtained from Hall effect measurements, which provided insights into the transport mechanisms that affected electrical conductivity and Seebeck coefficient. It is significant to doping Bi, which enhances the power factor to an optimal value of 0. 26 mW/mK2 and the optimal ZT value to 0.086 with the Bi content of 4 at.% at room-temperature.

  13. Effective visible light-active boron and europium co-doped BiVO4 synthesized by sol-gel method for photodegradion of methyl orange.

    PubMed

    Wang, Min; Che, Yinsheng; Niu, Chao; Dang, Mingyan; Dong, Duo

    2013-11-15

    Eu-B co-doped BiVO4 visible-light-driven photocatalysts have been synthesized using the sol-gel method. The resulting materials were characterized by a series of joint techniques, including XPS, XRD, SEM, BET, and UV-vis DRS analyses. Compared with BiVO4 and B-BiVO4 photocatalysts, the Eu-B-BiVO4 photocatalysts exhibited much higher photocatalytic activity for methyl orange (MO) degradation under visible light irradiation. The optimal Eu doping content is 0.8 mol%. It was revealed that boron and europium were doped into the lattice of BiVO4 and this led to more surface oxygen vacancies, high specific surface areas, small crystallite size, a narrower band gap and intense light absorbance in the visible region. The doped Eu(III) cations can help in the separation of photogenerated electrons. The synergistic effects of boron and europium in doped BiVO4 were the main reason for improving visible light photocatalytic activity.

  14. Solid-state chemical synthesis of rod-like fluorine-doped β-Bi2O3 and their enhanced photocatalytic property under visible light

    NASA Astrophysics Data System (ADS)

    Liang, Zhiting; Cao, Yali; Li, Yizhao; Xie, Jing; Guo, Nana; Jia, Dianzeng

    2016-12-01

    The pure β-Bi2O3 and fluorine-doped β-Bi2O3 rod-like microstructures were successfully prepared by a facile solid-state chemical reaction process. The composition, structure and morphology of the samples were determined by XRD, EDS, SEM, TEM, HRTEM, XPS and PL. Photocatalytic activities of all samples were investigated via the degradation of methyl orange (MO) under the irradiation of visible light. The fluorine-doped β-Bi2O3 rods exhibited higher photocatalytic activities than the pure β-Bi2O3 rod-like structures and commercial sample. The 82% MO can be degraded by the fluorine-doped β-Bi2O3 rods after irradiation for 2 h under visible light, which is 2-3 times higher than that of counterparts. The enhanced properties of the fluorine-doped samples attribute to their higher separation efficiency of electron-hole pairs and strong oxidation potential of valance band holes. The results show that the as-prepared rod-like fluorine-doped β-Bi2O3 materials are potential candidates for photocatalysts irradiated by visible light.

  15. Calcination temperature influenced multiferroic properties of Ca-doped BiFeO{sub 3} nanoparticles

    SciTech Connect

    Dhir, Gitanjali Uniyal, Poonam; Verma, N. K.

    2015-06-24

    The influence of Ca-doping and particle size on structural, morphological and magnetic properties of BiFeO{sub 3} nanoparticles has been studied. A sol-gel method was employed for the synthesis of nanoparticles and their particle size was tailored by varying the calcination temperature. Structural analysis revealed a rhombohedral distortion induced by Ca-substitution. The broadening of diffraction peaks with decreasing calcination temperature was indicative of reduction in crystallite size. The morphological analysis revealed the formation of agglomerated nanoparticles having average particle size ranging from 10-15 and 50-55 nm for C4 and C6, respectively. The agglomeration is attributed to high surface energy of nanoparticles. Ferromagnetism has been displayed by all the synthesized nanoparticles. Enhancement of saturation magnetization with Ca-substitution is attributed to suppression of spin cycloid structure by the reduction in size, lattice distortion and creation of oxygen vacancies by the substitution of divalent ion at trivalent site. Further, this value increases as a function of decreasing particle size. Strong particle size effects on magnetic properties of the synthesized nanoparticles are owed to increasing surface to volume ratio. All these observations are indicative of strong dependence of multiferroism on particle size.

  16. Local electrical conduction in polycrystalline La-doped BiFeO₃ thin films.

    PubMed

    Zhou, Ming-Xiu; Chen, Bo; Sun, Hai-Bin; Wan, Jian-Guo; Li, Zi-Wei; Liu, Jun-Ming; Song, Feng-Qi; Wang, Guang-Hou

    2013-06-07

    Local electrical conduction behaviors of polycrystalline La-doped BiFeO3 thin films have been investigated by combining conductive atomic force microscopy and piezoelectric force microscopy. Nanoscale current measurements were performed as a function of bias voltage for different crystal grains. Completely distinct conducting processes and resistive switching effects were observed in the grain boundary and grain interior. We have revealed that local electric conduction in a grain is dominated by both the grain boundary and ferroelectric domain, and is closely related to the applied electric field and the as-grown state of the grain. At lower voltages the electrical conduction is dominated by the grain boundary and is associated with the redistribution of oxygen vacancies in the grain boundary under external electric fields. At higher voltages both the grain boundary and ferroelectric domain are responsible for the electrical conduction of grains, and the electrical conduction gradually extends from the grain boundary into the grain interior due to the extension of the ferroelectric domain towards the grain interior. We have also demonstrated that the conduction dominated by the grain boundary exhibits a much small switching voltage, while the conduction of the ferroelectric domain causes a much high switching voltage in the grain interior.

  17. Atom Probe Tomography Analysis of Ag Doping in 2D Layered Material (PbSe)5(Bi2Se3)3.

    PubMed

    Ren, Xiaochen; Singh, Arunima K; Fang, Lei; Kanatzidis, Mercouri G; Tavazza, Francesca; Davydov, Albert V; Lauhon, Lincoln J

    2016-10-12

    Impurity doping in two-dimensional (2D) materials can provide a route to tuning electronic properties, so it is important to be able to determine the distribution of dopant atoms within and between layers. Here we report the tomographic mapping of dopants in layered 2D materials with atomic sensitivity and subnanometer spatial resolution using atom probe tomography (APT). APT analysis shows that Ag dopes both Bi2Se3 and PbSe layers in (PbSe)5(Bi2Se3)3, and correlations in the position of Ag atoms suggest a pairing across neighboring Bi2Se3 and PbSe layers. Density functional theory (DFT) calculations confirm the favorability of substitutional doping for both Pb and Bi and provide insights into the observed spatial correlations in dopant locations.

  18. Dopant activation mechanism of Bi wire-δ-doping into Si crystal, investigated with wavelength dispersive fluorescence x-ray absorption fine structure and density functional theory.

    PubMed

    Murata, Koichi; Kirkham, Christopher; Shimomura, Masaru; Nitta, Kiyofumi; Uruga, Tomoya; Terada, Yasuko; Nittoh, Koh-Ichi; Bowler, David R; Miki, Kazushi

    2017-04-20

    We successfully characterized the local structures of Bi atoms in a wire-δ-doped layer (1/8 ML) in a Si crystal, using wavelength dispersive fluorescence x-ray absorption fine structure at the beamline BL37XU, in SPring-8, with the help of density functional theory calculations. It was found that the burial of Bi nanolines on the Si(0 0 1) surface, via growth of Si capping layer at 400 °C by molecular beam epitaxy, reduced the Bi-Si bond length from [Formula: see text] to [Formula: see text] Å. We infer that following epitaxial growth the Bi-Bi dimers of the nanoline are broken, and the Bi atoms are located at substitutional sites within the Si crystal, leading to the shorter Bi-Si bond lengths.

  19. Ferromagnetism below 10K in Mn-doped BiTe

    NASA Astrophysics Data System (ADS)

    Bos, J. W. G.; Lee, M.; Morosan, E.; Zandbergen, H. W.; Lee, W. L.; Ong, N. P.; Cava, R. J.

    2006-11-01

    Ferromagnetism is observed below 10K in [Bi0.75Te0.125Mn0.125]Te . This material has the BiTe structure, which is made from the stacking of two Te-Bi-Te-Bi-Te blocks and one Bi-Bi block per unit cell. Crystal structure analysis shows that Mn is localized in the Bi2 blocks, and is accompanied by an equal amount of TeBi antisite occupancy in the Bi2Te3 blocks. These TeBi antisite defects greatly enhance the Mn solubility. This is demonstrated by comparison of the [Bi1-xMnx]Te and [Bi1-2xTexMnx]Te series; in the former, the solubility is limited to x=0.067 , while the latter has xmax=0.125 . The magnetism in [Bi1-xMnx]Te changes little with x , while that for [Bi1-2xTexMnx]Te shows a clear variation, leading to ferromagnetism for x>0.067 . Magnetic hysteresis and the anomalous Hall effect are observed for the ferromagnetic samples.

  20. Effect of Nd-doping on structure and microwave electromagnetic properties of BiFeO3

    NASA Astrophysics Data System (ADS)

    Liu, Sheng; Luo, Heng; Yan, Shuoqing; Yao, Lingling; He, Jun; Li, Yuhan; He, Longhui; Huang, Shengxiang; Deng, Lianwen

    2017-03-01

    The single-phase Bi1-xNdxFeO3 (x=0, 0.05, 0.10, 0.15, 0.20) were synthesized by the sol-gel method. Their crystal structure and microwave electromagnetic property in the frequency range of 2-18 GHz were investigated. The XRD patterns and Raman spectra showed that structural transition from rhombohedral (x=0, 0.05, 0.1) to triclinic (x=0.15) and tetragonal structure (x=0.20) appeared in the Bi1-xNdxFeO3. Electromagnetic measurement suggested that both microwave permeability μ‧ and magnetic loss tanδm increased remarkably over 2-18 GHz by doping Nd. Strong dielectric loss peak was observed on the samples of Bi1-xNdxFeO3 (x=0.15) and Bi1-xNdxFeO3 (x=0.2). Results show that Nd substitution is an effective way to push BiFeO3 to become microwave absorbing materials with high performance.

  1. Effect of Co doping on structural, optical, magnetic and dielectric properties of Bi{sub 2}Fe{sub 4}O{sub 9}

    SciTech Connect

    Mohapatra, S. R.; Sahu, B.; Singh, A. K.; Kaushik, S. D.

    2015-06-24

    Polycrystalline Bi{sub 2}Fe{sub 4}O{sub 9} and 2% Co doped Bi{sub 2}Fe{sub 4}O{sub 9} were prepared by solid state reaction route. X-ray diffraction (XRD) result reveals that there is no change in the crystal structure due to Co doping and the compound has orthorhombic structure. UV-visible spectroscopy confirms the decrease in band gap due Co doping. Zero field cooled magnetization measurement at 100 Oe magnetic field shows substantial decrease in the magnetic transition temperature. Room temperature frequency dependent dielectric permittivity at 1V DC bias shows ∼10% increase in Co doped sample with respect to pure Bi{sub 2}Fe{sub 4}O{sub 9}.

  2. Room temperature dielectric and magnetic properties of Gd and Ti co-doped BiFeO{sub 3} ceramics

    SciTech Connect

    Basith, M. A. E-mail: arima@yz.yamagata-u.ac.jp; Kurni, O.; Alam, M. S.; Sinha, B. L.; Ahmmad, Bashir E-mail: arima@yz.yamagata-u.ac.jp

    2014-01-14

    Room temperature dielectric and magnetic properties of BiFeO{sub 3} samples, co-doped with magnetic Gd and non-magnetic Ti in place of Bi and Fe, respectively, were reported. The nominal compositions of Bi{sub 0.9}Gd{sub 0.1}Fe{sub 1–x}Ti{sub x}O{sub 3} (x = 0.00-0.25) ceramics were synthesized by conventional solid state reaction technique. X-ray diffraction patterns revealed that the substitution of Fe by Ti induces a phase transition from rhombohedral to orthorhombic at x > 0.20. Morphological studies demonstrated that the average grain size was reduced from ∼1.5 μm to ∼200 nm with the increase in Ti content. Due to Ti substitution, the dielectric constant was stable over a wide range of high frequencies (30 kHz to 20 MHz) by suppressing the dispersion at low frequencies. The dielectric properties of the compounds are associated with their improved morphologies and reduced leakage current densities probably due to the lower concentration of oxygen vacancies in the compositions. Magnetic properties of Bi{sub 0.9}Gd{sub 0.1}Fe{sub 1–x}Ti{sub x}O{sub 3} (x = 0.00-0.25) ceramics measured at room temperature were enhanced with Ti substitution up to 20% compared to that of pure BiFeO{sub 3} and Ti undoped Bi{sub 0.9}Gd{sub 0.1}FeO{sub 3} samples. The enhanced magnetic properties might be attributed to the substitution induced suppression of spiral spin structure of BiFeO{sub 3}. An asymmetric shifts both in the field and magnetization axes of magnetization versus magnetic field curves was observed. This indicates the presence of exchange bias effect in these compounds notably at room temperature.

  3. Hydrothermal formation of N-doped (BiO)2CO3 honeycomb-like microspheres photocatalysts with bismuth citrate and dicyandiamide as precursors.

    PubMed

    Li, Qiuyan; Liu, Haitao; Dong, Fan; Fu, Min

    2013-10-15

    In order to develop efficient visible light driven photocatalysts for environmental application, novel N-doped (BiO)2CO3 honeycomb-like hierarchical microspheres were fabricated by an one-pot and template-free hydrothermal method, firstly using bismuth citrate and dicyandiamide as precursors. The as-prepared samples were characterized by XRD, SEM, FT-IR, PL, XPS, and UV-vis DRS in detail. The results indicated that the crystal structure and morphology of the samples can be tuned by hydrothermal reaction temperature. The source of nitrogen doping was from dicyandiamide, which also played a key role in hydrolyzing bismuth citrate to produce bismuth ions and citrate ions. The ammonium ions from the decomposition of dicyandiamide reacted with bismuth ions and carbonate ions from decomposition of citrate ions, producing in situ N-doped (BiO)2CO3 microspheres. The doped nitrogen substituted for oxygen in (BiO)2CO3 and was responsible for the band gap reduction of N-doped (BiO)2CO3. The as-prepared N-doped (BiO)2CO3 microspheres were applied for removal of NO in air and exhibited excellent visible light activity, exceeding that of N-doped TiO2 and C-doped TiO2. Time-dependent evolutions of crystal structure, morphology, chemical composition, and optical property were investigated systematically to reveal the growth mechanism of the honeycomb-like (BiO)2CO3 microspheres. The growth process involved multiple steps, including reaction, nucleation, crystallization, aggregation, and recrystallization. The proposed growth mechanism could provide new insights into the design and fabrication of hierarchical materials with advanced properties.

  4. Photoluminescence properties of Pr3+ doped Bi2ZnOB2O6 microcrystals and PMMA-based composites

    NASA Astrophysics Data System (ADS)

    Jaroszewski, K.; Chrunik, M.; Głuchowski, P.; Coy, E.; Maciejewska, B.; Jastrzab, R.; Majchrowski, A.; Kasprowicz, D.

    2016-12-01

    Photoluminescence properties of red-emitting Pr3+-doped Bi2ZnOB2O6 microcrystalline powder and PMMA-based composite materials were reported. Bi2ZnOB2O6:Pr3+ powders were synthesized by means of the modified Pechini method. The morphology and crystallographic structure of Bi2ZnOB2O6:Pr3+ microcrystals were investigated by XRD and HRTEM. The PMMA-based composite materials were prepared by embedding of Bi2ZnOB2O6:Pr3+ powder in the PMMA matrix. The vibrational properties of the powder and composite systems were investigated by μ-Raman spectroscopy. Emission spectra of the samples were measured under blue (451.6 nm) and UV (320 nm) excitation. Both, the powder and composite samples show enhancement of red emission (1D2 → 3H4) and quenching of greenish-blue luminescence from 3P0 level of Pr3+ ions after excitation in UV and VIS caused by the 3P0 ∼ 1D2 non-radiative relaxation of Pr3+ ion by low-lying charge transfer state and non-radiative de-excitation through Pr3+-Bi3+ energy transfer. The response of the powder and composite samples to pulsed excitation at 451.6 nm was measured by monitoring emission from the 1D2 level (595 nm/3P0 → 3H6 transition). The determined lifetimes τ1 and τ2 of the red emission at 595 nm (1D2 → 3H4 transition) of the composite are significantly longer in comparison to powder samples. Moreover, because of the good nonlinear optical properties of the Bi2ZnOB2O6 crystals and effective luminescence of the Pr3+-doped Bi2ZnOB2O6 powders and composites, they can be very useful as bi-functional materials in the new generation of optoelectronic devices.

  5. Metal-insulator transition in variably doped (Bi(1-x)Sb(x))2Se3 nanosheets.

    PubMed

    Lee, Chee Huei; He, Rui; Wang, ZhenHua; Qiu, Richard L J; Kumar, Ajay; Delaney, Conor; Beck, Ben; Kidd, T E; Chancey, C C; Sankaran, R Mohan; Gao, Xuan P A

    2013-05-21

    Topological insulators are novel quantum materials with metallic surface transport but insulating bulk behavior. Often, topological insulators are dominated by bulk contributions due to defect induced bulk carriers, making it difficult to isolate the more interesting surface transport characteristics. Here, we report the synthesis and characterization of nanosheets of a topological insulator Bi2Se3 with variable Sb-doping levels to control the electron carrier density and surface transport behavior. (Bi(1-x)Sb(x))2Se3 thin films of thickness less than 10 nm are prepared by epitaxial growth on mica substrates in a vapor transport setup. The introduction of Sb in Bi2Se3 effectively suppresses the room temperature electron density from ∼4 × 10(13) cm(-2) in pure Bi2Se3 (x = 0) to ∼2 × 10(12) cm(-2) in (Bi(1-x)Sb(x))2Se3 at x ∼ 0.15, while maintaining the metallic transport behavior. At x ≳ ∼0.20, a metal-insulator transition (MIT) is observed, indicating that the system has transformed into an insulator in which the metallic surface conduction is blocked. In agreement with the observed MIT, Raman spectroscopy reveals the emergence of vibrational modes arising from Sb-Sb and Sb-Se bonds at high Sb concentrations, confirming the appearance of the Sb2Se3 crystal structure in the sample. These results suggest that nanostructured chalcogenide films with controlled doping can be a tunable platform for fundamental studies and electronic applications of topological insulator systems.

  6. X-ray magnetic circular dichroism study of Dy-doped Bi2Te3 topological insulator thin films

    NASA Astrophysics Data System (ADS)

    Figueroa, A. I.; Baker, A. A.; Harrison, S. E.; Kummer, K.; van der Laan, G.; Hesjedal, T.

    2017-01-01

    Magnetic doping of topological insulators (TIs) is crucial for unlocking novel quantum phenomena, paving the way for spintronics applications. Recently, we have shown that doping with rare earth ions introduces large magnetic moments and allows for high doping concentrations without the loss of crystal quality, however no long range magnetic order was observed. In Dy-doped Bi2Te3 we found a band gap opening above a critical doping concentration, despite the paramagnetic bulk behavior. Here, we present a surface-sensitive x-ray magnetic circular dichroism (XMCD) study of an in situ cleaved film in the cleanest possible environment. The Dy M4,5 absorption spectra measured with circularly polarized x-rays are fitted using multiplet calculations to obtain the effective magnetic moment. Arrott-Noakes plots, measured by the Dy M5 XMCD as a function of field at low temperatures, give a negative transition temperature. The evaporation of a ferromagnetic Co thin film did not introduce ferromagnetic ordering of the Dy dopants either; instead a lowering of the transition temperature was observed, pointing towards an antiferromagnetic ordering scenario. This result shows that there is a competition between the magnetic exchange interaction and the Zeeman interaction. The latter favors the Co and Dy magnetic moments to be both aligned along the direction of the applied magnetic field, while the exchange interaction is minimized if the Dy and Co atoms are antiferromagnetically coupled, as in zero applied field.

  7. Aliovalent Ba2+ doping: A way to reduce oxygen vacancy in multiferroic BiFeO3

    NASA Astrophysics Data System (ADS)

    Das, Rajasree; Sharma, Sucheta; Mandal, Kalyan

    2016-03-01

    This paper demonstrates the impact of Ba2+ substitution on the structural, dielectric relaxation and AC conductivity properties of Bi1-xBaxFeO3 (0 ≤ x ≤ 0.25) ceramics. Ba doping incorporates rhombohedral to tetragonal structural transformation in perovskite BFO. XPS data shows change in oxygen vacancy concentration with Ba doping and it also suggests that schoimetry of the doped compounds is not maintained by creating mix valance state of Fe. Reduction in oxygen vacancy (OVs) in the doped samples is explained by Kroger-Vink notation. Arrhenius plot shows activation energy for dielectric relaxation of the doped samples lies between ~1.16 and 1.44 eV. AC conductivity of material decreases as Ba ion substitution increases in the parent compound. Electrical conductivity is attributed to the correlated barrier hopping (CBH) motion of the oxygen vacancies in the samples. Coulombic potential barrier (WM) height, calculated from Elliott model for CBH motion of charge carriers shows correlation with the activation energy of AC conductivity at low temperature. Activation energy value obtained from the impedance measurements of the samples implies short range migration of oxygen vacancies dominates the frequency dependent conductivity while the frequency independent part of conductivity is the result of long range migration of oxygen vacancies.

  8. Enhancement of tetragonal anisotropy and stabilisation of the tetragonal phase by Bi/Mn-double-doping in BaTiO3 ferroelectric ceramics

    PubMed Central

    Yabuta, Hisato; Tanaka, Hidenori; Furuta, Tatsuo; Watanabe, Takayuki; Kubota, Makoto; Matsuda, Takanori; Ifuku, Toshihiro; Yoneda, Yasuhiro

    2017-01-01

    To stabilise ferroelectric-tetragonal phase of BaTiO3, the double-doping of Bi and Mn up to 0.5 mol% was studied. Upon increasing the Bi content in BaTiO3:Mn:Bi, the tetragonal crystal-lattice-constants a and c shrank and elongated, respectively, resulting in an enhancement of tetragonal anisotropy, and the temperature-range of the ferroelectric tetragonal phase expanded. X-ray absorption fine structure measurements confirmed that Bi and Mn were located at the A(Ba)-site and B(Ti)-site, respectively, and Bi was markedly displaced from the centrosymmetric position in the BiO12 cluster. This A-site substitution of Bi also caused fluctuations of B-site atoms. Magnetic susceptibility measurements revealed a change in the Mn valence from +4 to +3 upon addition of the same molar amount of Bi as Mn, probably resulting from a compensating behaviour of the Mn at Ti4+ sites for donor doping of Bi3+ into the Ba2+ site. Because addition of La3+ instead of Bi3+ showed neither the enhancement of the tetragonal anisotropy nor the stabilisation of the tetragonal phase, these phenomena in BaTiO3:Mn:Bi were not caused by the Jahn-Teller effect of Mn3+ in the MnO6 octahedron, but caused by the Bi-displacement, probably resulting from the effect of the 6 s lone-pair electrons in Bi3+. PMID:28367973

  9. Mn-doping induced ferromagnetism and enhanced superconductivity in Bi4 -xMnxO4S3 (0.075 ≤x ≤0.15 )

    NASA Astrophysics Data System (ADS)

    Feng, Zhenjie; Yin, Xunqing; Cao, Yiming; Peng, Xianglian; Gao, Tian; Yu, Chuan; Chen, Jingzhe; Kang, Baojuan; Lu, Bo; Guo, Juan; Li, Qing; Tseng, Wei-Shiuan; Ma, Zhongquan; Jing, Chao; Cao, Shixun; Zhang, Jincang; Yeh, N.-C.

    2016-08-01

    We demonstrate that Mn doping in the layered sulfides Bi4O4S3 leads to stable Bi4-xMnxO4S3 compounds that exhibit both long-range ferromagnetism and enhanced superconductivity for 0.075 ≤x ≤0.15 , with a possible record superconducting transition temperature (Tc) ˜15 K among all BiS2-based superconductors. We conjecture that the coexistence of superconductivity and ferromagnetism may be attributed to Mn doping in the spacer Bi2O2 layers away from the superconducting BiS2 layers, whereas the enhancement of Tc may be due to excess electron transfer to BiS2 from the Mn4 +/Mn3 + substitutions in Bi2O2 . This notion is empirically corroborated by the increased electron-carrier densities upon Mn doping, and by further studies of the Bi4-xAxO4S3 compounds (A = Co, Ni; x =0.1 , 0.125), where the Tc values remain comparable to that of the undoped Bi4O4S3 system (˜4.5 K) due to lack of 4+ valences in either Co or Ni ions for excess electron transfer to the BiS2 layers. These findings therefore shed new light on feasible pathways to enhance the Tc values of BiS2-based superconductors, although complete elucidation of the interplay between superconductivity and ferromagnetism in these anisotropic layered compounds awaits the development of single crystalline materials for further investigation.

  10. CdTe Photovoltaic Devices for Solar Cell Applications

    DTIC Science & Technology

    2011-12-01

    falls between the end points of HgTe (Eg= -0.3 eV) and CdTe (Eg =1.5 eV). Because of its bandgap tunability with the Cd composition, Hg1-xCdxTe alloy...a bandgap energy that falls between the end points of HgTe (Eg= -0.3 eV) and CdTe (Eg =1.5 eV). Because of its bandgap tunability with the Cd ...theoretical efficiency of CdTe . These include removing recombination centers in the grain boundaries, improving crystal quality, and increasing doping

  11. First-principles study of roles of Cu and Cl in polycrystalline CdTe

    DOE PAGES

    Yang, Ji -Hui; Yin, Wan -Jian; Park, Ji -Sang; ...

    2016-01-25

    In this study, Cu and Cl treatments are important processes to achieve high efficiency polycrystalline cadmium telluride (CdTe) solar cells, thus it will be beneficial to understand the roles they play in both bulk CdTe and CdTe grain boundaries (GBs). Using first-principles calculations, we systematically study Cu and Cl-related defects in bulk CdTe. We find that Cl has only a limited effect on improving p-type doping and too much Cl can induce deep traps in bulk CdTe, whereas Cu can enhance ptype doping of bulk CdTe. In the presence of GBs, we find that, in general, Cl and Cu willmore » prefer to stay at GBs, especially for those with Te-Te wrong bonds, in agreement with experimental observations.« less

  12. First-principles study of roles of Cu and Cl in polycrystalline CdTe

    SciTech Connect

    Yang, Ji -Hui; Yin, Wan -Jian; Park, Ji -Sang; Metzger, Wyatt; Wei, Su -Huai

    2016-01-25

    In this study, Cu and Cl treatments are important processes to achieve high efficiency polycrystalline cadmium telluride (CdTe) solar cells, thus it will be beneficial to understand the roles they play in both bulk CdTe and CdTe grain boundaries (GBs). Using first-principles calculations, we systematically study Cu and Cl-related defects in bulk CdTe. We find that Cl has only a limited effect on improving p-type doping and too much Cl can induce deep traps in bulk CdTe, whereas Cu can enhance ptype doping of bulk CdTe. In the presence of GBs, we find that, in general, Cl and Cu will prefer to stay at GBs, especially for those with Te-Te wrong bonds, in agreement with experimental observations.

  13. First-principles study of roles of Cu and Cl in polycrystalline CdTe

    SciTech Connect

    Yang, Ji-Hui; Park, Ji-Sang; Metzger, Wyatt; Yin, Wan-Jian; Wei, Su-Huai

    2016-01-28

    Cu and Cl treatments are important processes to achieve high efficiency polycrystalline cadmium telluride (CdTe) solar cells, thus it will be beneficial to understand the roles they play in both bulk CdTe and CdTe grain boundaries (GBs). Using first-principles calculations, we systematically study Cu and Cl-related defects in bulk CdTe. We find that Cl has only a limited effect on improving p-type doping and too much Cl can induce deep traps in bulk CdTe, whereas Cu can enhance p-type doping of bulk CdTe. In the presence of GBs, we find that, in general, Cl and Cu will prefer to stay at GBs, especially for those with Te-Te wrong bonds, in agreement with experimental observations.

  14. Photoelectrochemical performance of W-doped BiVO4 thin-films deposited by spray pyrolysis

    NASA Astrophysics Data System (ADS)

    Holland, Stephen K.; Dutter, Melissa R.; Lawrence, David J.; Reisner, Barbara A.; DeVore, Thomas C.

    2013-09-01

    The effect of tungsten doping and hydrogen annealing treatments on the photoelectrochemical (PEC) performance of bismuth vanadate (BiVO4) photoanodes for solar water splitting was studied. Thin films of BiVO4 were deposited on ITO-coated glass slides by ultrasonic spray pyrolysis of an aqueous solution containing bismuth nitrate and vanadium oxysulfate. Tungsten doping was achieved by adding either silicotungstic acid (STA) or ammonium metatungstate (AMT) in the aqueous precursor. The 1.7 μm - 2.2 μm thick films exhibited a highly porous microstructure. Undoped films that were reduced at 375 ºC in 3% H2 exhibited the largest photocurrent densities under 0.1 W cm-2 AM1.5 illumination. This performance enhancement was believed to be due to the formation of oxygen vacancies, which are shallow electron donors, in the films. Films doped with 1% or 5% tungsten from either STA or AMT exhibited reduced photoelectrochemical performance and greater sample-to-sample performance variations. Powder X-ray diffraction data of the undoped films indicated that they were comprised primarily of the monoclinic scheelite phase while unidentified phases were also present. Scanning electron microscopy showed slightly different morphology characteristics for the Wdoped films. It is surmised that the addition of W in the deposition process promoted the morphology differences and the formation of different phases, thus reducing the PEC performance of the photoanode samples. Significant PEC performance variability was also observed among films deposited using the described process.

  15. Undoped and Ni-doped CoOx surface modification of porous BiVO4 photoelectrodes for water oxidation

    DOE PAGES

    Liu, Ya; Guo, Youhong; Schelhas, Laura T.; ...

    2016-09-29

    Surface modification of photoanodes with oxygen evolution reaction (OER) catalysts is an effective approach to enhance water oxidation kinetics, to reduce external bias, and to improve the energy harvesting efficiency of photoelectrochemical (PEC) water oxidation. Here, the surface of porous BiVO4 photoanodes was modified by the deposition of undoped and Ni-doped CoOx via nitrogen flow assisted electrostatic spray pyrolysis. This newly developed atmospheric pressure deposition technique allows for surface coverage throughout the porous structure with thickness and composition control. PEC testing of modified BiVO4 photoanodes shows that after deposition of an undoped CoOx surface layer, the onset potential shifts negativelymore » by ca. 420 mV and the photocurrent density reaches 2.01 mA cm–2 at 1.23 vs VRHE under AM 1.5G illumination. Modification with Ni-doped CoOx produces even more effective OER catalysis and yields a photocurrent density of 2.62 mA cm–2 at 1.23 VRHE under AM 1.5G illumination. Furthermore, the valence band X-ray photoelectron spectroscopy and synchrotron-based X-ray absorption spectroscopy results show the Ni doping reduces the Fermi level of the CoOx layer; the increased surface band bending produced by this effect is partially responsible for the superior PEC performance.« less

  16. Template-Engaged In Situ Synthesis of Carbon-Doped Monoclinic Mesoporous BiVO4: Photocatalytic Treatment of Rhodamine B

    NASA Astrophysics Data System (ADS)

    Yao, Mingming; Gan, Lihua; Liu, Mingxian; Tripathi, Pranav K.; Liu, Yafei; Hu, Zhonghua

    2015-06-01

    In this paper, carbon-doped monoclinic scheelite mesoporous bismuth vanadate was synthesized through template-engaged in situ method. The bismuth nitrate pentahydrate and ammonia metavanadate were used as bismuth and vanadium precursors, respectively, glucose as carbon source, and mesoporous SiO2 aerogel as a hard template. Carbon-doped monoclinic mesoporous BiVO4 were obtained by heat treatment of BiVO4/glucose/template to carbonize glucose and form monoclinic crystal, followed by etching with NaOH solution to remove the SiO2 template. The samples were characterized by x-ray diffraction, N2 adsorption and desorption, UV-visible spectroscopy, Energy dispersive spectrometry, Raman spectroscopy, and Transmission electron microscopy. It was found that the sample with a carbon content of 0.5 wt.% possesses a specific surface area of 10.2 m2/g and has mesoporous structure with the most probable pore size of 13.9 nm. The band gap of carbon-doped monoclinic mesoporous BiVO4 was estimated to be 2.33 eV, indicating the superior photocatalytic activity under visible light. The photocatalytic efficiency of carbon-doped monoclinic mesoporous BiVO4 for the degradation of Rhodamine B under visible light (λ > 400 nm) in 120 min reaches 98.7%, Besides, the carbon-doped monoclinic mesoporous BiVO4 photocatalyst still showed high stability: 85% for Rhodamine B degradation after ten recycles.

  17. The effect of Mo doping on the charge separation dynamics and photocurrent performance of BiVO 4 photoanodes

    SciTech Connect

    Pattengale, Brian; Huang, Jier

    2016-01-01

    Doping with electron-rich elements in BiVO4 photoanodes has been demonstrated as a desirable approach for improving their carrier mobility and charge separation efficiency. However, the effect of doping and dopant concentration on the carrier dynamics and photoelectrochemical performance remains unclear. In this work, we examined the effects of Mo doping on the charge separation dynamics and photocurrent performance in BiVO4 photoanodes. We show that the photocurrent of BiVO4 photoanodes increases with increasing concentration of the Mo dopant, which can be attributed to both the improved carrier mobility resulting from increased electron density and charge separation efficiency due to the diminishing of trap states upon Mo doping. The effect of doping on the electronic structure, carrier dynamics and photocurrent performance of BiVO4 photoanodes resulting from W and Mo dopants was also compared and discussed in this study. The knowledge gained from this work will provide important insights into the optimization of the carrier mobility and charge separation efficiency of BiVO4 photoanodes by controlling the dopants and their concentrations.

  18. Ti doping-induced magnetic and morphological transformations in Sr- and Ca-substituted BiFeO3

    NASA Astrophysics Data System (ADS)

    Khomchenko, V. A.; Paixão, J. A.

    2016-04-01

    The investigation focuses on the crystal structure, microstructure, local ferroelectric and magnetic properties of the Bi0.9Sr0.1Fe1-x Ti x O3-δ (x  =  0.05, 0.1, 0.15; δ  =  (0.1  -  x)/2) multiferroics prepared by a solid-state reaction method. All the samples have been found to be isostructural with the pure BiFeO3 (the material crystallizes in a polar rhombohedral structure belonging to the space group R3c). It has been shown that the pattern of changes in the lattice parameters of the Bi0.9Sr0.1Fe1-x Ti x O3-δ samples can be interpreted as consistent with the doping-driven elimination of anion vacancies at x  ⩽  0.1 and the formation of cation vacancies at x  >  0.1. The readjustment of the defect structure associated with the mechanism of charge compensation in the aliovalent-substituted BiFeO3 is accompanied by correlated changes in the morphology, ferroelectric/ferroelastic domain structure and magnetic properties of the materials. In particular, it has been found that the deviation from the ideal (δ  =  0) cation-anion stoichiometry in the Bi0.9Sr0.1Fe1-x Ti x O3-δ system leads to a significant decrease in the average size of crystal grain and ferroelectric domains and gives rise to an antiferromagnetic-weak ferromagnetic transformation. Results of this study have been compared with those obtained for equally substituted samples of the Bi0.9Ca0.1Fe1-x Ti x O3-δ series (Khomchenko and Paixão 2015 J. Phys.: Condens. Matter 27 436002) to demonstrate how the variation in the chemical pressure introduced by the partial replacement of Bi3+ with bigger (Sr2+) and smaller (Ca2+) ions can affect the multiferroic behavior of Ti-doped bismuth ferrites.

  19. Marked enhancement in electron-hole separation achieved in the low bias region using electrochemically prepared Mo-doped BiVO4 photoanodes.

    PubMed

    Park, Yiseul; Kang, Donghyeon; Choi, Kyoung-Shin

    2014-01-21

    Mo-doped BiVO4 electrodes were prepared by an electrochemical route for use as photoanodes in a photoelectrochemical cell. The purpose of Mo-doping was to improve the electron transport properties, which in turn can increase the electron-hole separation yield. The poor electron-hole separation yield was known to be one of the main limiting factors for BiVO4-based photoanodes. The electrochemical route provided an effective way of doping BiVO4, and the optimally doped sample, BiV(0.97)Mo(0.03)O4, increased the electron-hole separation yield from 0.23 to 0.57 at 0.6 V vs. RHE, which is a record high separation yield achieved for BiVO4-based photoanodes. As a result, BiV(0.97)Mo(0.03)O4 generated impressive photocurrents, for example, 2 mA cm(-2) at a potential as low as 0.4 V vs. RHE for sulfite oxidation, which has fast oxidation kinetics and, therefore, the loss of holes by surface recombination is negligible. For photooxidation of water, BiV(0.97)Mo(0.03)O4 was paired with FeOOH as an oxygen evolution catalyst (OEC) to improve the poor catalytic ability of BiV(0.97)Mo(0.03)O4 for water oxidation. The resulting BiV(0.97)Mo(0.03)O4/FeOOH photoanodes generated a significantly improved photocurrent for water oxidation compared to previous reported results, but the photocurrent of BiV(0.97)Mo(0.03)O4/FeOOH for water oxidation could not reach the photocurrent of BiV(0.97)Mo(0.03)O4 for sulfite oxidation. In order to examine the cause, the effects of Mo-doping on the interaction between BiVO4 and FeOOH and the effects of FeOOH on the electron-hole separation yield of BiV(0.97)Mo(0.03)O4 were investigated in detail, which provided new insights into semiconductor-OEC interactions.

  20. Preparation and characterization of Bi-doped TiO{sub 2} and its solar photocatalytic activity for the degradation of isoproturon herbicide

    SciTech Connect

    Reddy, Police Anil Kumar; Srinivas, Basavaraju; Kala, Pruthu; Kumari, Valluri Durga; Subrahmanyam, Machiraju

    2011-11-15

    Highlights: {yields} Visible active Bi-TiO{sub 2} photocatalyst preparation and thorough charaterization. {yields} Bi-TiO{sub 2} shows high activity for isoproturon degradation under solar light irradiation. {yields} The spectral response of TiO{sub 2} shifts from UV to visible light region by Bi doping. {yields} Bi{sup 3+{delta}+} species are playing a vital role in minimizing e{sup -}/h{sup +} recombination. -- Abstract: Bi-doped TiO{sub 2} catalyst was prepared by sol-gel method and was characterized by thermo gravimetric analysis (TGA), X-ray diffraction spectra (XRD), X-ray photo electronic spectroscopy (XPS), UV-Vis diffused reflectance spectra (DRS), photoluminescence spectra (PLS), transmission electron microscopy (TEM), energy dispersive analysis of X-rays (EDAX) and BET surface area. The photocatalytic activity of the catalysts were evaluated for the degradation of isoproturon herbicide under solar light irradiation. The UV-Visible DRS of Bi-doped TiO{sub 2} showed red shift in optical absorption. The presence of Bi{sup 3+{delta}+} species are playing a vital role in minimizing the electron hole recombination resulting higher activity compared to bare TiO{sub 2}.

  1. Photoanode with Enhanced Performance Achieved by Coating BiVO4 onto ZnO-Templated Sb-Doped SnO2 Nanotube Scaffold.

    PubMed

    Zhou, Lite; Yang, Yang; Zhang, Jing; Rao, Pratap M

    2017-04-05

    The performance of BiVO4 photoanodes, especially under front-side illumination, is limited by the modest charge transport properties of BiVO4. Core/shell nanostructures consisting of BiVO4 coated onto a conductive scaffold are a promising route to improving the performance of BiVO4-based photoanodes. Here, we investigate photoanodes composed of thin and uniform layers of BiVO4 particles coated onto Sb-doped SnO2 (Sb:SnO2) nanotube arrays that were synthesized using a sacrificial ZnO template with controllable length and packing density. We demonstrate a new record for the product of light absorption and charge separation efficiencies (ηabs × ηsep) of ∼57.3 and 58.5% under front- and back-side illumination, respectively, at 0.6 VRHE. Moreover, both of these high ηabs × ηsep efficiencies are achieved without any extra treatment or intentional doping in BiVO4. These results indicate that integration of Sb:SnO2 nanotube cores with other successful strategies such as doping and hydrogen treatment can increase the performance of BiVO4 and related semiconductors closer to their theoretical potential.

  2. Ultrahigh sensitivity of anomalous Hall effect sensor based on Cr-doped Bi2Te3 topological insulator thin films

    SciTech Connect

    Ni, Y.; Zhang, Z.; Nlebedim, I. C.; Jiles, D. C.

    2016-07-01

    Anomalous Hall effect (AHE) was recently discovered in magnetic element-doped topological insulators (TIs), which promises low power consumption and high efficiency spintronics and electronics. This discovery broadens the family of Hall sensors. In this paper, AHE sensors based on Cr-doped Bi2Te3 topological insulator thin films are studied with two thicknesses (15 and 65 nm). It is found, in both cases, that ultrahigh Hall sensitivity can be obtained in Cr-doped Bi2Te3. Hall sensitivity reaches 1666 Ω/T in the sensor with the 15 nm TI thin film, which is higher than that of the conventional semiconductor HE sensor. The AHE of 65 nm sensors is even stronger, which causes the sensitivity increasing to 2620 Ω/T. Furthermore, after comparing Cr-doped Bi2Te3 with the previously studied Mn-doped Bi2Te3 TI Hall sensor, the sensitivity of the present AHE sensor shows about 60 times higher in 65 nm sensors. Furthermore, the implementation of AHE sensors based on a magnetic-doped TI thin film indicates that the TIs are good candidates for ultrasensitive AHE sensors.

  3. Ferroelectric Sm-Doped BiMnO3 Thin Films with Ferromagnetic Transition Temperature Enhanced to 140 K

    PubMed Central

    2014-01-01

    A combined chemical pressure and substrate biaxial pressure crystal engineering approach was demonstrated for producing highly epitaxial Sm-doped BiMnO3 (BSMO) films on SrTiO3 single crystal substrates, with enhanced magnetic transition temperatures, TC up to as high as 140 K, 40 K higher than that for standard BiMnO3 (BMO) films. Strong room temperature ferroelectricity with piezoresponse amplitude, d33 = 10 pm/V, and long-term retention of polarization were also observed. Furthermore, the BSMO films were much easier to grow than pure BMO films, with excellent phase purity over a wide growth window. The work represents a very effective way to independently control strain in-plane and out-of-plane, which is important not just for BMO but for controlling the properties of many other strongly correlated oxides. PMID:25141031

  4. Achieving ZT=2.2 with Bi-doped n-type SnSe single crystals

    PubMed Central

    Duong, Anh Tuan; Nguyen, Van Quang; Duvjir, Ganbat; Duong, Van Thiet; Kwon, Suyong; Song, Jae Yong; Lee, Jae Ki; Lee, Ji Eun; Park, SuDong; Min, Taewon; Lee, Jaekwang; Kim, Jungdae; Cho, Sunglae

    2016-01-01

    Recently SnSe, a layered chalcogenide material, has attracted a great deal of attention for its excellent p-type thermoelectric property showing a remarkable ZT value of 2.6 at 923 K. For thermoelectric device applications, it is necessary to have n-type materials with comparable ZT value. Here, we report that n-type SnSe single crystals were successfully synthesized by substituting Bi at Sn sites. In addition, it was found that the carrier concentration increases with Bi content, which has a great influence on the thermoelectric properties of n-type SnSe single crystals. Indeed, we achieved the maximum ZT value of 2.2 along b axis at 733 K in the most highly doped n-type SnSe with a carrier density of −2.1 × 1019 cm−3 at 773 K. PMID:27941762

  5. Effect of Y-doping on the electrical transport properties of nanocrystalline BiFeO3

    NASA Astrophysics Data System (ADS)

    Mukherjee, A.; Basu, S.; Chakraborty, G.; Pal, M.

    2012-07-01

    Effect of yttrium doping on the electrical transport properties of sol-gel prepare nanocrystalline BiFeO3 was investigated. A comprehensive state-of-the art sophisticated instruments like x-ray diffraction, differential thermal analyzer, field emission scanning electron microscope, and HRTEM were utilized to characterize the BiFeO3 nanoparticles. It was observed that the values of dc activation energy calculated from Arrhenius relation increase with increase of yttrium content. The variation of ac conductivity with frequency and temperature exhibits a correlated barrier hopping conduction mechanism. The dielectric permittivity of the sample reveals an increasing tendency with the concentration of yttrium and depends on both the grain and the interfacial grain boundary resistance. The activation energies for the dielectric relaxation estimated from the modulus spectra were found to be reasonably good agreement with those obtained from dc conductivity study.

  6. Fabrication of bidirectionally doped β-Bi2O3/TiO2-NTs with enhanced photocatalysis under visible light irradiation.

    PubMed

    Li, Deyi; Zhang, Yonggang; Zhang, Yalei; Zhou, Xuefei; Guo, Sujin

    2013-08-15

    Stable β-Bi2O3/TiO2-NTs photocatalyst with excellent visible-light-activity is successfully prepared by bidirectional doping. Stake structure of the TiO2-NTs provides a larger specific surface area and makes the contact area between the TiO2-NTs and β-Bi2O3 much larger; The stake structure of TiO2-NTs not only leads to a firmer combination of TiO2-NTs and β-Bi2O3, but also makes them dope one another deeply. The modification of Bi species into TiO2-NTs can form Bi-O-Ti chemical absorption bonds, then a localized impurity level is generated within the band gap. Electrons can be excited and transferred from the Bi(3+) impurity level to the conduction band (CB) of TiO2, similar to narrowing the band-gap of TiO2-NTs, resulting in a red shift of the absorption edge and an enhancement in visible-light activity. During annealing, Bi atoms are partially replaced by Ti atoms. The lattice of β-Bi2O3 is compressed around the Ti impurity, making the lattice dislocate and distort. This dislocation and distortion leads to an increase in the β-Bi2O3 valance band (VB), from 2.02 to 2.28 eV. Accordingly, the weak oxidability of β-Bi2O3 is improved, and its photocatalytic ability is further enhanced. Moreover, this lattice dislocation and distortion changes the Bi-O distances, thus remarkably improving the stability of the β-Bi2O3/TiO2-NTs.

  7. Absorption, fluorescence and second harmonic generation in Cr³⁺-doped BiB₃O₆ glasses.

    PubMed

    Kuznik, W; Fuks-Janczarek, I; Wojciechowski, A; Kityk, I V; Kiisk, V; Majchrowski, A; Jaroszewicz, L R; Brik, M G; Nagy, G U L

    2015-06-15

    Synthesis, spectral properties and photoinduced nonlinear optical effects of chromium-doped BiB3O6 glass are studied in the present paper. Absorption, excitation and time resolved luminescence spectra are presented and luminescence decay behavior is discussed. Detailed analysis of the obtained spectra (assignment of the most prominent spectral features in terms of the corresponding Cr(3+) energy levels, crystal field strength Dq, Racah parameters B and C) was performed. A weak photostimulated second harmonic generation signal was found to increase drastically due to poling by proton implantation in the investigated sample.

  8. Orthorhombic polar Nd-doped BiFeO3 thin film on MgO substrate.

    PubMed

    Leontyev, I N; Yuzyuk, Yu I; Janolin, P-E; El-Marssi, M; Chernyshov, D; Dmitriev, V; Golovko, Yu I; Mukhortov, V M; Dkhil, B

    2011-08-24

    A Nd-doped BiFeO(3) thin film deposited on MgO substrate was studied by synchrotron diffraction. The ferroelectric nature of the film is proven by in-plane remanent polarization measurement. The highest possible symmetry of the film is determined to be orthorhombic, within the Fm2m space group. Such a structure is rotated by 45° with respect to the substrate and is consistent with tilts of oxygen octahedra doubling the unit cell. This polar structure presents a rather unusual strain-accommodation mechanism.

  9. Laser stimulated piezoelectricity in Er3+ doped GeO2-Bi2O3 glasses containing silicon nanocrystals

    NASA Astrophysics Data System (ADS)

    Kassab, Luciana Reyes Pires; Camilo, Mauricio Eiji; da Silva, Diego Silverio; de Assumpção, Thiago Alexandre Alves; Fedorchuk, A. O.; Plucinski, K. J.

    2014-12-01

    We report the first observation of the laser stimulated piezoelectricity in Er3+ doped GeO2-Bi2O3 glasses containing silicon nanocrystals, prepared using the simple well known melt quenching technique. Two split beams originated from the same nanosecond lasers were used for the performance of the bicolor laser treatment. The fundamental (λ = 1064 nm) and the doubled frequency (λ = 532 nm) signal of a pulsed nanosecond Nd:YAG laser, as the fundamental (λ = 1540 nm) and the doubled frequency (λ = 770 nm) signal of an Er:glass laser were used. The ratio of power densities between the fundamental and the doubled frequency beams has been varied from 4:1 to 8:1. This value was chosen to achieve the maximum output photoinduced piezoelectric response. The present photoinduced piezoelectricity effect opens a new road for obtaining optically operated piezoelectric devices in germanate composites doped with rare-earth ions.

  10. Origin of Room Temperature Ferromagnetism in Cr-Doped Lead-Free Ferroelectric Bi0.5Na0.5TiO3 Materials

    NASA Astrophysics Data System (ADS)

    Thanh, L. T. H.; Doan, N. B.; Dung, N. Q.; Cuong, L. V.; Bac, L. H.; Duc, N. A.; Bao, P. Q.; Dung, D. D.

    2017-01-01

    The development of multiferroic materials based on lead-free ferroelectric material provides an opportunity to fabricate next-generation electronic devices. In this work, Cr-doped lead-free ferroelectric Bi0.5Na0.5TiO3 materials were synthesized by using the sol-gel method. The optical band gap was reduced from 3.12 eV to 2.12 eV for undoped and 9 mol.% Cr-doped Bi0.5Na0.5TiO3 with the substitution of Cr at the Ti-site. Cr-doped Bi0.5Na0.5TiO3 materials exhibited weak ferromagnetism at room temperature. Saturation magnetization was approximately 0.08 μ B/Cr at 5 K. Our work will facilitate the further understanding of the role of transition metal ferromagnetism in lead-free ferroelectric materials at room temperature.

  11. Effect of isovalent non-magnetic Fe-site doping on the electronic structure and spontaneous polarization of BiFeO3

    NASA Astrophysics Data System (ADS)

    Singh, Poorva; Roy, Amritendu; Garg, Ashish; Prasad, R.

    2015-05-01

    We report the results of our first-principles calculations on the effect of isovalent, non-magnetic, Al3+ ion doping on the electronic structure and spontaneous polarization of multiferroic BiFeO3. Our calculations reveal that Al3+ doping in BiFeO3 results in the reduction of Fe-O-Fe bond angle, leading to the weakening of antiferromagnetic superexchange interaction, further substantiated by the reduction of exchange interaction constant with increasing doping level. Lowering of well-depth is suggestive of reduced switching potential and improved P-E loop with lowered coercivity. Chemical bonding analysis by electron localization function shows that cation-oxygen bonding is of mixed ionic-covalent character, with marginal increase in the covalent character with increasing doping concentration. Large spontaneous polarization of undoped BiFeO3 is retained with lower doping level (6.25%), while for higher doping content (31.25%), the spontaneous polarization is reduced, primarily due to larger c/a ratio at higher doping level.

  12. Effects of low-level Ag doping on Bi{sub 2}Sr{sub 2}CaCu{sub 2}O{sub 8+x}

    SciTech Connect

    Deis, T.A.; Eror, N.G.; Krishnaraj, P.; Prorok, B.C.; Lelovic, M.; Balachandran, U.

    1995-07-01

    Bi{sub 2}Sr{sub 2}CaCu{sub 2}O{sub 8} has been doped with silver, up to 10,000 ppm, in three ways: excess additions, substitution of Ag for Bi, and substitution of Ag for Sr. Effects of doping on the c-axis lattice parameter and critical temperature ({Tc}) were measured. Effects from doing were only observed in slow-cooled [10{degree}/hr] oxygen equilibrated samples. Doping by excess additions caused a small decrease in {Tc} and an increase in the c-axis length of the lattice. Doping by substitution, compared to excess Ag additions, caused a larger decrease in {Tc} and higher c-axis values for doping levels up to 1,000 ppm. Doping by substitution at higher levels (1,000--10,000 ppm) caused {Tc} to increase and the c-axis to decrease. Samples with similar substitutional doping levels exhibited comparable {Tc} values and samples with Ag substituted for Sr consistently exhibited higher c-axis values than samples that had equivalent amounts of Ag substituted for Bi.

  13. Effect of isovalent non-magnetic Fe-site doping on the electronic structure and spontaneous polarization of BiFeO{sub 3}

    SciTech Connect

    Singh, Poorva; Prasad, R.; Roy, Amritendu; Garg, Ashish

    2015-05-14

    We report the results of our first-principles calculations on the effect of isovalent, non-magnetic, Al{sup 3+} ion doping on the electronic structure and spontaneous polarization of multiferroic BiFeO{sub 3}. Our calculations reveal that Al{sup 3+} doping in BiFeO{sub 3} results in the reduction of Fe–O–Fe bond angle, leading to the weakening of antiferromagnetic superexchange interaction, further substantiated by the reduction of exchange interaction constant with increasing doping level. Lowering of well-depth is suggestive of reduced switching potential and improved P-E loop with lowered coercivity. Chemical bonding analysis by electron localization function shows that cation–oxygen bonding is of mixed ionic–covalent character, with marginal increase in the covalent character with increasing doping concentration. Large spontaneous polarization of undoped BiFeO{sub 3} is retained with lower doping level (6.25%), while for higher doping content (31.25%), the spontaneous polarization is reduced, primarily due to larger c/a ratio at higher doping level.

  14. Yb3+-doped LiBi(WO4)2 single crystals fibers grown by micro-pulling down technique and characterization

    NASA Astrophysics Data System (ADS)

    Rekik, B.; Derbal, M.; Lebbou, K.; Benammar, M. E. A.

    2016-10-01

    The Yb3+ doped LiBi(WO4)2 fibers single crystals have been pulled using the micro-pulling down technique (μ-PD) with controlled fiber diameter and under stationary stable growth conditions. The corresponding crystallization interface was flat, with meniscus length equal to the fiber radii. The pulling rate used was in the range of 2-6 mm h-1. We have determined the monophased field of LiBi1-xYbx(WO4)2 and observed that the lattice parameters decrease as a function of Yb3+ substitution in Bi3+ sites. The structural characterization has been studied by X-ray diffraction (XRD), X-ray fluorescence (XRF) method and Raman spectroscopy. We also performed micro-luminescence characterizations and drawn the decay time for both of the 1 at% (Yb3+) doped LiBi(WO4)2 fiber and powders.

  15. Leakage current phenomena in Mn-doped Bi(Na,K)TiO3-based ferroelectric thin films

    NASA Astrophysics Data System (ADS)

    Walenza-Slabe, J.; Gibbons, B. J.

    2016-08-01

    Mn-doped 80(Bi0.5Na0.5)TiO3-20(Bi0.5K0.5)TiO3 thin films were fabricated by chemical solution deposition on Pt/TiO2/SiO2/Si substrates. Steady state and time-dependent leakage current were investigated from room temperature to 180 °C. Undoped and low-doped films showed space-charge-limited current (SCLC) at high temperatures. The electric field marking the transition from Ohmic to trap-filling-limited current increased monotonically with Mn-doping. With 2 mol. % Mn, the current was Ohmic up to 430 kV/cm, even at 180 °C. Modeling of the SCLC showed that all films exhibited shallow trap levels and high trap concentrations. In the regime of steady state leakage, there were also observations of negative differential resistivity and positive temperature coefficient of resistivity near room temperature. Both of these phenomena were confined to relatively low temperatures (below ˜60 °C). Transient currents were observed in the time-dependent leakage data, which was measured out to several hundred seconds. In the undoped films, these were found to be a consequence of oxygen vacancy migration modulating the electronic conductivity. The mobility and thermal activation energy for oxygen vacancies was extracted as μion ≈ 1.7 × 10-12 cm2 V-1 s-1 and EA,ion ≈ 0.92 eV, respectively. The transient current displayed different characteristics in the 1 mol. % Mn-doped films which were not readily explained by oxygen vacancy migration.

  16. Photoluminescence and electrical properties of Eu-doped (Na0.5Bi0.5)TiO3 ferroelectric single crystals

    NASA Astrophysics Data System (ADS)

    Zhang, Haiwu; Zhao, Xiangyong; Deng, Hao; Chen, Chao; Lin, Di; Li, Xiaobing; Yan, Jun; Luo, Haosu

    2014-02-01

    Eu3+-doped Na0.5Bi0.5TiO3 (Eu:NBT) single crystals were grown by a top-seeded solution growth method. Photoluminescence emission and excitation spectra of Eu:NBT were investigated. The two transitions in 7F0 → 5D0 excitation spectra reveal that Eu3+ ions were incorporated into two adjacent crystallographic sites in NBT, i.e., Bi3+ and Na+ sites. The former has a symmetrical surrounding, while the later has a disordered environment, which was confirmed by decay curve measurements. The dielectric dispersion behavior was depressed and the piezoelectric and ferroelectric properties were improved after Eu doping.

  17. Large power factor and anomalous Hall effect and their correlation with observed linear magneto resistance in Co-doped Bi2Se3 3D topological insulator.

    PubMed

    Singh, Rahul; Shukla, K K; Kumar, A; Okram, G S; Singh, D; Ganeshan, V; Lakhani, Archana; Ghosh, A K; Chatterjee, Sandip

    2016-09-21

    Magnetoresistance (MR), thermo power, magnetization and Hall effect measurements have been performed on Co-doped Bi2Se3 topological insulators. The undoped sample shows that the maximum MR as a destructive interference due to a π-Berry phase leads to a decrease of MR. As the Co is doped, the linearity in MR is increased. The observed MR of Bi2Se3 can be explained with the classical model. The low temperature MR behavior of Co doped samples cannot be explained with the same model, but can be explained with the quantum linear MR model. Magnetization behavior indicates the establishment of ferromagnetic ordering with Co doping. Hall effect data also supports the establishment of ferromagnetic ordering in Co-doped Bi2Se3 samples by showing the anomalous Hall effect. Furthermore, when spectral weight suppression is insignificant, Bi2Se3 behaves as a dilute magnetic semiconductor. Moreover, the maximum power factor is observed when time reversal symmetry (TRS) is maintained. As the TRS is broken the power factor value is decreased, which indicates that with the rise of Dirac cone above the Fermi level the anomalous Hall effect and linearity in MR increase and the power factor decreases.

  18. Growth mechanism and photocatalytic activity of self-organized N-doped (BiO)₂CO₃ hierarchical nanosheet microspheres from bismuth citrate and urea.

    PubMed

    Dong, Fan; Xiong, Ting; Wang, Rui; Sun, Yanjuan; Jiang, Yanke

    2014-05-14

    Synthesis of nano-/microstructured functional materials with 3D hierarchical microspheres structure has provided new opportunities for optimizing their physical and chemical properties. This work revealed a new growth mechanism of self-organized N-doped (BiO)2CO3 hierarchical microspheres which were fabricated by hydrothermal treatment of bismuth citrate and urea without an additive. Based on time-dependent observation, several evolution processes were believed to account for the formation of the self-organized N-doped (BiO)2CO3 hierarchical microspheres. Initially, crystallized (BiO)4CO3(OH)2 particles were formed during the nucleation and crystallization processes. Subsequently, the intermediate (BiO)4CO3(OH)2 reacted with CO3(2-) to generate (BiO)2CO3 growth nuclei on the surface of the CO2 bubbles which can act as heterogeneous nucleation centers. Next, the (BiO)2CO3 growth nuclei aggregated together after the consumption of CO2 bubbles with the increased concentration of OH(-) and further grew to be nanosheets. The microspheres constructed by small nanosheets further grew with the consumption of small particles. Finally, all (BiO)4CO3(OH)2 transformed to the (BiO)2CO3 phase, accompanied by the doping of N element into the lattice of (BiO)2CO3, and thereby, the well-defined N-doped (BiO)2CO3 hierarchical microspheres were shaped. Depending on the distance between neighboring CO2 bubbles, the resulting microspheres can be linked or dispersed. Besides, the gradual release of CO2 bubbles and CO3(2-) played a crucial role in controlling the nucleation and growth process, resulting in different sizes of microspheres. The fabricated N-doped (BiO)2CO3 hierarchical microspheres displayed admirably efficient and durable photocatalytic activity under both UV and visible light towards removal of NO, which is mainly attributed to the introduction of N element and the special hierarchical structure. This work provides new insights into the controlled synthesis of

  19. Giant Rashba Splitting in Pb1-x Snx Te (111) Topological Crystalline Insulator Films Controlled by Bi Doping in the Bulk.

    PubMed

    Volobuev, Valentine V; Mandal, Partha S; Galicka, Marta; Caha, Ondřej; Sánchez-Barriga, Jaime; Di Sante, Domenico; Varykhalov, Andrei; Khiar, Amir; Picozzi, Silvia; Bauer, Günther; Kacman, Perla; Buczko, Ryszard; Rader, Oliver; Springholz, Gunther

    2017-01-01

    The topological properties of lead-tin chalcogenide topological crystalline insulators can be widely tuned by temperature and composition. It is shown that bulk Bi doping of epitaxial Pb1-x Snx Te (111) films induces a giant Rashba splitting at the surface that can be tuned by the doping level. Tight binding calculations identify their origin as Fermi level pinning by trap states at the surface.

  20. Co-doping induced coexistence of superconductivity and ferromagnetism in Bi3.9Co0.1O4S3

    NASA Astrophysics Data System (ADS)

    Yu, Chuan; Feng, Zhenjie; Yin, Xunqing; Li, Qing; Kang, Baojuan; Lu, Bo; Jing, Chao; Cao, Shixun; Zhang, Jincang

    2016-09-01

    The effects of Co doping on the physical properties of the Bi4O4S3 system was studied. We discovered that stable Bi3.9Co0.1O4S3 compound exhibits both long-range ferromagnetism and enhanced superconductivity with thermodynamic evidences for Tc ∼ 5.5 K. We found that there is an anomalous feature which represents superconducting transition in the hysteretic M-vs.-H loops for Bi3.9Co0.1O4S3 at T = 3 K.

  1. White luminescence and energy transfer process in Bi3+,Sm3+ co-doped Ca3Al2O6 phosphors

    NASA Astrophysics Data System (ADS)

    Wang, LongJun; Guo, Hai; Wei, YunLe; Noh, Hyeon Mi; Jeong, Jung Hyun

    2015-04-01

    Ca3Al2O6:Bi3+,Sm3+ phosphors were synthesized by conventional solid state reaction method and their luminescent properties were systemically investigated by excitation, emission spectra and decay curves measurement. Through an efficient energy transfer process from Bi3+ to Sm3+, the obtained phosphors exhibit emission from Bi3+ and Sm3+ with considerable intensity under near-ultraviolet excitation (300 nm). Tuning the content of Sm3+ can generate the varied hues from blue green to white. Our research will extend the understanding of interactions between Bi3+ and rare earth ions and show the potential application of Bi3+,Sm3+ co-doped phosphors in W-LEDs field.

  2. Enhanced visible-light photocatalytic activities of porous olive-shaped sulfur-doped BiVO4-supported cobalt oxides

    NASA Astrophysics Data System (ADS)

    Zhao, Zhenxuan; Dai, Hongxing; Deng, Jiguang; Liu, Yuxi; Au, Chak Tong

    2013-04-01

    Porous S-doped bismuth vanadate with an olive-like morphology and its supported cobalt oxide (y wt% CoOx/BiVO4-δS0.08, y = 0.1, 0.8, and 1.6) photocatalysts were fabricated using the dodecylamine-assisted alcohol-hydrothermal and incipient wetness impregnation methods, respectively. It is shown that the y wt% CoOx/BiVO4-δS0.08 photocatalysts were single-phase with a monoclinic scheetlite structure, a porous olive-like morphology, a surface area of 8.8-9.2 m2/g, and a bandgap energy of 2.38-2.41 eV. There was the co-presence of surface Bi5+, Bi3+, V5+, V3+, Co3+, and Co2+ species in y wt% CoOx/BiVO4-δS0.08. The 0.8 wt% CoOx/BiVO4-δS0.08 sample performed the best for methylene blue degradation under visible-light illumination. The photocatalytic mechanism was also discussed. We believe that the sulfur and CoOx co-doping, higher oxygen adspecies concentration, and lower bandgap energy were responsible for the excellent visible-light-driven catalytic activity of 0.8 wt% CoOx/BiVO4-δS0.08.

  3. Remarkably enhanced photovoltaic effects and first-principles calculations in neodymium doped BiFeO3

    PubMed Central

    Peng, Yi-Ting; Chiou, Shan-Haw; Hsiao, Ching-Hung; (Hao) Ouyang, Chuenhou; Tu, Chi-Shun

    2017-01-01

    Remarkably enhanced photovoltaic effects have been observed in the heterostructures of p-type A-site Nd3+-doped BiFeO3 (Bi0.9375Nd0.0625)FeO3 (or BFONd) polycrystalline ceramics and the n-type ITO thin film. The maximum power conversion is ~0.82%, which is larger than 0.015% in BiFeO3 (BFO) under blue-ultraviolet irradiation of wavelength λ = 405 nm. The current-voltage (I-V) characteristic curve suggests a p-n junction interface between the ITO thin film and BFO (or BFONd) ceramics. The band gaps calculated from first-principles for BFO and BFONd are respectively 2.25 eV and 2.23 eV, which are consistent with the experimental direct band gaps of 2.24 eV and 2.20 eV measured by optical transmission spectra. The reduction of the band gap in BFONd can be explained by the lower electronic Fermi level due to acceptor states revealed by first-principles calculations. The optical calculations show a larger absorption coefficient in BFONd than in BFO. PMID:28337977

  4. Remarkably enhanced photovoltaic effects and first-principles calculations in neodymium doped BiFeO3

    NASA Astrophysics Data System (ADS)

    Peng, Yi-Ting; Chiou, Shan-Haw; Hsiao, Ching-Hung; (Hao) Ouyang, Chuenhou; Tu, Chi-Shun

    2017-03-01

    Remarkably enhanced photovoltaic effects have been observed in the heterostructures of p-type A-site Nd3+-doped BiFeO3 (Bi0.9375Nd0.0625)FeO3 (or BFONd) polycrystalline ceramics and the n-type ITO thin film. The maximum power conversion is ~0.82%, which is larger than 0.015% in BiFeO3 (BFO) under blue-ultraviolet irradiation of wavelength λ = 405 nm. The current-voltage (I-V) characteristic curve suggests a p-n junction interface between the ITO thin film and BFO (or BFONd) ceramics. The band gaps calculated from first-principles for BFO and BFONd are respectively 2.25 eV and 2.23 eV, which are consistent with the experimental direct band gaps of 2.24 eV and 2.20 eV measured by optical transmission spectra. The reduction of the band gap in BFONd can be explained by the lower electronic Fermi level due to acceptor states revealed by first-principles calculations. The optical calculations show a larger absorption coefficient in BFONd than in BFO.

  5. Enhanced ferromagnetic properties in Ho and Ni co-doped BiFeO{sub 3} ceramics

    SciTech Connect

    Park, J. S.; Yoo, Y. J.; Hwang, J. S.; Lee, Y. P.; Kang, J.-H.; Lee, B. W.

    2014-01-07

    The magnetic properties of polycrystalline Bi{sub 1-x}Ho{sub x}Fe{sub 1-y}Ni{sub y}O{sub 3} (x = 0, 0.1; y = 0, 0.03), which were prepared by the solid-state method, have been investigated. The powder X-ray diffraction reveals that all the samples are polycrystalline and show rhombohedral perovskite structure. The micro-Raman scattering studies confirm that Bi{sub 0.9}Ho{sub 0.1}Fe{sub 0.97}Ni{sub 0.03}O{sub 3} has a compressive lattice distortion induced by the simultaneous substitution of Ho and Ni ions at A and B-sites, respectively. From the magnetization dependences at room temperature, Bi{sub 0.9}Ho{sub 0.1}Fe{sub 0.97}Ni{sub 0.03}O{sub 3} has enhanced magnetization (0.2280 emu/g) and low coercive field (280 Oe). It was revealed that the Ni dopant plays an important role for the improved ferromagnetic properties and the Ho dopant favors the magnetic exchange interactions in the co-doped ceramic.

  6. An ordered and porous N-doped carbon dot-sensitized Bi2O3 inverse opal with enhanced photoelectrochemical performance and photocatalytic activity.

    PubMed

    Sun, Yan; Zhang, Zuxing; Xie, Anjian; Xiao, Changhe; Li, Shikuo; Huang, Fangzhi; Shen, Yuhua

    2015-09-07

    A novel ordered porous Bi2O3 inverse opal structure (IOS) was prepared using a polystyrene (PS) photonic crystal as the template for the first time. Nitrogen-doped carbon dots (N-CDs) were chosen to sensitize the as-prepared Bi2O3 IOS for improving photoelectrochemical performance and photocatalytic activity. The photocurrent density of the fabricated N-CDs/Bi2O3 IOS with favorable visible light absorption properties can achieve 0.75 mA cm(-2), which significantly enhanced performance two-, seven-, and thirty-fold compared with that of the CDs/Bi2O3 IOS, Bi2O3 IOS, and Bi2O3 nanoparticles (NPs), respectively. The N-CDs/Bi2O3 IOS also has increased photocatalytic activity for the decolorization of Rhodamine B (RhB), 4 times higher than Bi2O3 NPs. The above performance enhancement of N-CDs/Bi2O3 IOS is caused by the synergistic effect of N-CDs sensitization and the highly ordered IOS, which make it a promising material to be used in clean energy, solar cells, potential applications in water purification and so on.

  7. CdTe Solar Cells: The Role of Copper

    SciTech Connect

    Guo, Da; Akis, Richard; Brinkman, Daniel; Sankin, Igor; Fang, Tian; Vasileska, Dragica; Ringhofer, Christain

    2014-06-06

    In this work, we report on developing 1D reaction-diffusion solver to understand the kinetics of p-type doping formation in CdTe absorbers and to shine some light on underlying causes of metastabilities observed in CdTe PV devices. Evolution of intrinsic and Cu-related defects in CdTe solar cell has been studied in time-space domain self-consistently with free carrier transport and Poisson equation. Resulting device performance was simulated as a function of Cu diffusion anneal time showing pronounced effect the evolution of associated acceptor and donor states can cause on device characteristics. Although 1D simulation has intrinsic limitations when applied to poly-crystalline films, the results suggest strong potential of the approach in better understanding of the performance and metastabilities of CdTe photovoltaic device.

  8. Spatial Distribution of Dopant Incorporation in CdTe

    SciTech Connect

    Guthrey, Harvey; Moseley, John; Colegrove, Eric; Burst, James; Albin, David; Metzger, Wyatt; Al-Jassim, Mowafak

    2016-11-21

    In this work we use state-of-the-art cathodoluminescence (CL) spectrum imaging that provides spectrum-per-pixel mapping of the CL emission to examine how dopant elements are incorporated into CdTe. Emission spectra and intensity are used to monitor the spatial distribution of additional charge carriers through characteristic variations in the CL emission based on theoretical modeling. Our results show that grain boundaries play a role in the incorporation of dopants in CdTe, whether intrinsic or extrinsic. This type of analysis is crucial for providing feedback to design different processing schedules that optimize dopant incorporation in CdTe photovoltaic material, which has struggled to reach high carrier concentration values. Here, we present results on CdTe films exposed to copper, phosphorus, and intrinsic doping treatments.

  9. Features of the charge-transport mechanism in layered Bi{sub 2}Te{sub 3} single crystals doped with chlorine and terbium

    SciTech Connect

    Abdullaev, N. A. Abdullaev, N. M.; Aliguliyeva, H. V.; Kerimova, T. G.; Mehdiyev, G. S.; Nemov, S. A.

    2011-01-15

    The temperature dependences (T = 5-300 K) of the resistivity in the plane of layers and in the direction perpendicular to the layers, as well as the Hall effect and the magnetoresistance (H < 80 kOe, T = 0.5-4.2 K) in Bi{sub 2}Te{sub 3} single crystals doped with chlorine and terbium, are investigated. It is shown that the doping of Bi{sub 2}Te{sub 3} with terbium atoms results in p-type conductivity and in increasing hole concentration. The doping of Bi{sub 2}Te{sub 3} with chlorine atoms modifies also the character of its conductivity instead of changing only the type from p to n. In the temperature dependence of the resistivity in the direction perpendicular to layers, a portion arises with the activation conductivity caused by the hopping between localized states. The charge-transport mechanism in Bi{sub 2}Te{sub 3} single crystals doped with chlorine is proposed.

  10. Controllable growth of vertically aligned Bi-doped TiO2 nanorod arrays for all-oxide solid-state DSSCs

    NASA Astrophysics Data System (ADS)

    Asemi, Morteza; Ghanaatshoar, Majid

    2016-09-01

    In this study, vertically aligned Bi-doped TiO2 nanorod arrays as photoanodes were successfully grown on the fluorine-doped tin oxide by hydrothermal method. Structural analysis showed that bismuth was successfully incorporated into the TiO2 lattice at low concentration, but at higher concentration, phase segregation of Bi2O3 in the TiO2 matrix was occurred. TiO2 nanorods with 3 % bismuth concentration had minimum electrical resistivity. As the solid-state electrolyte, Mg-doped CuCrO2 nanoparticles with p-type conductivity were synthesized by sol-gel method. The fabricated all-oxide solid-state dye-sensitized solar cells with Bi-doped TiO2 nanorods displayed better photovoltaic performance due to the presence of Bi. The improved cell performance was correlated with the higher dye loading, slower charge recombination rate and the higher electrical conductivity of the photoanodes. After mechanical pressing, the all-oxide solid-state DSSC exhibited enhanced photovoltaic performance due to the formation of the large neck between adjacent nanoparticles by mechanical sintering. The open-circuit photovoltage decay measurement of the devices and electrical conductivity of the nanoparticles before and after pressing revealed that the mechanical pressing technique reduces charge recombination rate and facilitates electron transport through the interconnected nanoparticles.

  11. Hydrothermal fabrication of N-doped (BiO)2CO3: Structural and morphological influence on the visible light photocatalytic activity

    NASA Astrophysics Data System (ADS)

    Dong, Fan; Wang, Rui; Li, Xinwei; Ho, Wing-Kei

    2014-11-01

    Various 3D N-doped (BiO)2CO3 (N-BOC) hierarchical superstructures self-assembled with 2D nanosheets were fabricated by one-step hydrothermal treatment of bismuth citrate and urea. The as-obtained samples were characterized by XRD, XPS, FT-IR, SEM, N2 adsorption-desorption isotherms and UV-vis DRS. The hydrothermal temperature plays a crucial role in tuning the crystal and morphological structure of the samples. Adjusting the reaction temperature to 150, 180 and 210 °C, we obtained N-doped (BiO)2CO3 samples with corresponding attractive persimmon-like, flower-like and nanoflakes nano/microstructures. The photocatalytic activities of the samples were evaluated by removal of NO under visible and solar light irradiation. The results revealed that the N-doped (BiO)2CO3 hierarchical superstructures showed enhanced visible light photocatalytic activity compared to pure (BiO)2CO3 and TiO2-based visible light photocatalysts. The outstanding photocatalytic performance of N-BOC samples can be ascribed to the doped nitrogen and the special hierarchical structure. The present work could provide new perspectives in controlling the morphological structure and photocatalytic activity of photocatalyst for better environmental pollution control.

  12. Charge defects and highly enhanced multiferroic properties in Mn and Cu co-doped BiFeO3 thin films

    NASA Astrophysics Data System (ADS)

    Dong, Guohua; Tan, Guoqiang; Luo, Yangyang; Liu, Wenlong; Xia, Ao; Ren, Huijun

    2014-06-01

    Pure BiFeO3 (BFO) and Mn, Cu co-doped BiFeO3 (BFMCO) thin films were deposited on fluorine doped tin oxide (FTO) substrates by a chemical solution deposition method. Detailed investigations were made on the effects of Mn and Cu co-doping on the crystal structure, the defect chemistry, multiferroic properties of the BFO thin films. With the co-doping of Mn and Cu, a structural transition from the rhombohedral (R3c:H) to the biphasic structure (R3c:H + P1) is confirmed by XRD, Rietveld refinement and Raman analysis. X-ray photoelectron spectroscopy (XPS) analysis shows that the coexistence of Fe2+/Fe3+ and Mn2+/Mn3+ ions in the co-doping films are demonstrated. Meanwhile, the way of the co-doping at B-sits is conducive to suppress Fe valence state of volatility and to decrease oxygen vacancies and leakage current. It's worth noting that the co-doping can induce the superior ferroelectric properties (a huge remanent polarization, 2Pr ∼ 220 μC/cm2 and a relatively low coercive field, 2Ec ∼ 614 kV/cm). The introduction of Mn2+ and Cu2+ ions optimizes the magnetic properties of BFO thin films by the biphasic structure and the destruction of spin cycloid.

  13. Synthesis and characterization of rare-earth doped SrBi{sub 2}Nb{sub 2}O{sub 9} phase in lithium borate based nanocrystallized glasses

    SciTech Connect

    Harihara Venkataraman, B.; Fujiwara, Takumi; Komatsu, Takayuki

    2009-06-15

    Glass composites comprising of un-doped and samarium-doped SrBi{sub 2}Nb{sub 2}O{sub 9} nanocrystallites are fabricated in the glass system 16.66SrO-16.66[(1-x)Bi{sub 2}O{sub 3}-xSm{sub 2}O{sub 3}]-16.66Nb{sub 2}O{sub 5}-50Li{sub 2}B{sub 4}O{sub 7} (0<=x<=0.5, in mol%) via the melt quenching technique. The glassy nature of the as-quenched samples is established by differential thermal analyses. Transmission electron microscopic studies reveal the presence of about 15 nm sized spherical crystallites of the fluorite-like SrBi{sub 1.9}Sm{sub 0.1}Nb{sub 2}O{sub 9} phase in the samples heat treated at 530 deg. C. The formation of layered perovskite-type un-doped and samarium-doped SrBi{sub 2}Nb{sub 2}O{sub 9} nanocrystallites with an orthorhombic structure through the intermediate fluorite phase is confirmed by X-ray powder diffraction and micro-Raman spectroscopic studies. The influence of samarium doping on the lattice parameters, lattice distortions, and the Raman peak positions of SrBi{sub 2}Nb{sub 2}O{sub 9} perovskite phase is clarified. The dielectric constants of the perovskite SrBi{sub 2}Nb{sub 2}O{sub 9} and SrBi{sub 1.9}Sm{sub 0.1}Nb{sub 2}O{sub 9} nanocrystals are relatively larger than those of the corresponding fluorite-like phase and the precursor glass. - Graphical Abstract: This figure shows the XRD patterns at room temperature for the as-quenched and heat treated samples in Sm{sub 2}O{sub 3}-doped (x=0.1) glass. Based on these results, it is concluded that the formation of samarium-doped perovskite SBN phase takes place via an intermediate fluorite-like phase in the crystallization of this glass.

  14. Anomalous reduction of the switching voltage of Bi-doped Ge{sub 0.5}Se{sub 0.5} ovonic threshold switching devices

    SciTech Connect

    Seo, Juhee; Ahn, Hyung-Woo; Shin, Sang-yeol; Cheong, Byung-ki; Lee, Suyoun

    2014-04-14

    Switching devices based on Ovonic Threshold Switching (OTS) have been considered as a solution to overcoming limitations of Si-based electronic devices, but the reduction of switching voltage is a major challenge. Here, we investigated the effect of Bi-doping in Ge{sub 0.5}Se{sub 0.5} thin films on their thermal, optical, electrical properties, as well as on the characteristics of OTS devices. As Bi increased, it was found that both of the optical energy gap (E{sub g}{sup opt}) and the depth of trap states decreased resulting in a drastic reduction of the threshold voltage (V{sub th}) by over 50%. In addition, E{sub g}{sup opt} was found to be about three times of the conduction activation energy for each composition. These results are explained in terms of the Mott delocalization effect by doping Bi.

  15. Structure Evolution and Multiferroic Properties in Cobalt Doped Bi4NdTi3Fe1-xCoxO15-Bi3NdTi2Fe1-xCoxO12-δ Intergrowth Aurivillius Compounds

    NASA Astrophysics Data System (ADS)

    Zhang, D. L.; Huang, W. C.; Chen, Z. W.; Zhao, W. B.; Feng, L.; Li, M.; Yin, Y. W.; Dong, S. N.; Li, X. G.

    2017-03-01

    Here, we report the structure evolution, magnetic and ferroelectric properties in Co-doped 4- and 3-layered intergrowth Aurivillius compounds Bi4NdTi3Fe1-xCoxO15-Bi3NdTi2Fe1-xCoxO12-δ. The compounds suffer a structure evolution from the parent 4-layered phase (Bi4NdTi3FeO15) to 3-layered phase (Bi3NdTi2CoO12-δ) with increasing cobalt doping level from 0 to 1. Meanwhile the remanent magnetization and polarization show opposite variation tendencies against the doping level, and the sample with x = 0.3 has the largest remanent magnetization and the smallest polarization. It is believed that the Co concentration dependent magnetic properties are related to the population of the Fe3+ -O-Co3+ bonds, while the suppressed ferroelectric polarization is due to the enhanced leakage current caused by the increasing Co concentration. Furthermore, the samples (x = 0.1–0.7) with ferromagnetism show magnetoelectric coupling effects at room temperature. The results indicate that it is an effective method to create new multiferroic materials through modifying natural superlattices.

  16. Structure Evolution and Multiferroic Properties in Cobalt Doped Bi4NdTi3Fe1-xCoxO15-Bi3NdTi2Fe1-xCoxO12-δ Intergrowth Aurivillius Compounds

    PubMed Central

    Zhang, D. L.; Huang, W. C.; Chen, Z. W.; Zhao, W. B.; Feng, L.; Li, M.; Yin, Y. W.; Dong, S. N.; Li, X. G.

    2017-01-01

    Here, we report the structure evolution, magnetic and ferroelectric properties in Co-doped 4- and 3-layered intergrowth Aurivillius compounds Bi4NdTi3Fe1-xCoxO15-Bi3NdTi2Fe1-xCoxO12-δ. The compounds suffer a structure evolution from the parent 4-layered phase (Bi4NdTi3FeO15) to 3-layered phase (Bi3NdTi2CoO12-δ) with increasing cobalt doping level from 0 to 1. Meanwhile the remanent magnetization and polarization show opposite variation tendencies against the doping level, and the sample with x = 0.3 has the largest remanent magnetization and the smallest polarization. It is believed that the Co concentration dependent magnetic properties are related to the population of the Fe3+ -O-Co3+ bonds, while the suppressed ferroelectric polarization is due to the enhanced leakage current caused by the increasing Co concentration. Furthermore, the samples (x = 0.1–0.7) with ferromagnetism show magnetoelectric coupling effects at room temperature. The results indicate that it is an effective method to create new multiferroic materials through modifying natural superlattices. PMID:28272495

  17. Solvothermal syntheses of Bi and Zn co-doped TiO2 with enhanced electron-hole separation and efficient photodegradation of gaseous toluene under visible-light.

    PubMed

    Li, Juan-Juan; Cai, Song-Cai; Xu, Zhen; Chen, Xi; Chen, Jin; Jia, Hong-Peng; Chen, Jing

    2017-03-05

    This study investigated the effects of Bi doped and Bi-Zn co-doped TiO2 on photodegradation of gaseous toluene. The doped TiO2 with various concentration of metal was prepared using the solvothermal route and characterized by SEM, XRD, Raman, BET, DRS, XPS, PL and EPR. Their photocatalytic activities under visible-light irradiation were drastically influenced by the dopant content. The results showed that moderate metal doping levels were obviously beneficial for the toluene degradation, while high doping levels suppressed the photocatalytic activity. The photocatalytic degradation of toluene over TiBi1.9%O2 and TiBi1.9%Zn1%O2 can reach to 51% and 93%, respectively, which are much higher than 25% of TiO2. Bi doping into TiO2 lattice generates new intermediate energy level of Bi below the CB edge of TiO2. The electron excitation from the VB to Bi orbitals results in the decreased band gap, extended absorption of visible-light and thus enhances its photocatalytic efficiency. Zn doping not only further enhances the absorption in this visible-light region, but also Zn dopant exists as the form of ZnO crystallites located on the interfaces of TiO2 agglomerates and acts as a mediator of interfacial charge transfer to suppress the electron-hole recombination. These synergistic effects are responsible for the enhanced photocatalytic performance.

  18. Raman Spectroscopy Characterization of Se- Doped Bi{sub 12}SiO{sub 20} Crystals

    SciTech Connect

    Milenov, T. I.; Rafailov, P. M.; Yankova, L.; Veleva, M. N.; Dobreva, S.; Thomsen, C.; Egorysheva, A. V.; Skorikov, V. M.; Titorenkova, R.

    2010-01-21

    Crystals of BSO doped with Se are successfully grown by the Czochralski method. The measured concentration of Se is 1.75x10{sup 18} cm{sup -3} and of Fe is 6.4x10{sup 18} cm{sup -3}, i.e. the concentration of Fe is significantly increased. It is assumed that the doping takes place through the replacement 3Si{sup 4+}->(Se{sup 6+}+2Fe{sup 3+}). The doping-induced shift of the Raman-active A, E and F-modes is not significant and it is concluded that the lattice distortions caused by doping are very small in BSO crystals doped with Se at low concentrations. The doping with Se at high concentration leads to occasional second phase inclusions. It is observed that all A, E and F- modes in the Raman spectrum are downshifted with 2-5 cm{sup -1}. It is concluded that the doping with Se at high concentrations follows the same mechanism as those with low concentrations but the introduced lattice distortions are more significant.

  19. Surface chemical and photocatalytic consequences of Ca-doping of BiFeO3 as probed by XPS and H2O2 decomposition studies

    NASA Astrophysics Data System (ADS)

    Zaki, Mohamed I.; Ramadan, Wegdan; Katrib, Ali; Rabee, Abdallah I. M.

    2014-10-01

    Pure and Ca-doped Bi1-xCaxFeO3 samples were prepared with x = 0.0-0.2, adopting a sol-gel method. Previously reported studies performed on similarly composed and prepared samples revealed that Ca-doping, above solubility limit (namely at ≥10%-Ca), results in phase separation and formation of BiFeO3/α(γ)-Fe2O3 nanocomposite particles. Hetero p/n nanojunctions thus established were considered to help separating photo-generated electron-hole pairs and, therefore, explain consequent promotion of photo-Fenton catalytic activity of BiFeO3 towards methylene blue degradation in presence of H2O2 additive. However, the encompassed decomposition of H2O2 was not addressed. To bridge this gap of knowledge, the present investigation was designed to assess Ca-doping-effected surface chemical modifications and gauge its impact on the heterogeneous photo-/thermo-catalytic activity of BiFeO3 towards H2O2 decomposition, by means of X-ray photoelectron spectroscopy (XPS) and H2O2 decomposition gravimetry. XPS results revealed generation of high binding energy Bi 4f and Fe 2p states, as well as enhancement of the surface basicity, upon doping to 10%-Ca. These surface chemical consequences are rendered hardly detectable upon further increase of the dopant magnitude to 20%-Ca. In parallel, the H2O2 decomposition activity of the ferrite, under natural visible light, is enhanced to optimize upon Ca-doping at 10%, and, then, decreased on further doping to 20%. H2O2 decomposition experiments carried out in absence of light indicate that the doping promoting impact is reflected essentially in the photocatalytic activity. Accordingly, the observed surface chemical consequences of Ca-doping are considered to consolidate the p/n nanojunctions consequently established in the material bulk, by retarding recombination of visible light generated electron-hole pairs, thus enhancing the heterogeneous photocatalytic activity of BiFeO3.

  20. One-pot solvothermal preparation and enhanced photocatalytic activity of metallic silver and graphene co-doped BiVO4 ternary systems

    NASA Astrophysics Data System (ADS)

    Xu, Lei; Wei, Yongge; Guo, Wan; Guo, Yihang; Guo, Yingna

    2015-03-01

    A series of metallic silver and graphene (GR) co-doped monoclinic BiVO4 ternary systems (Ag/GR/BiVO4) are demonstrated by a single-step solvothermal method. The phase and chemical structure, morphology, textural and optical absorption properties of the Ag/GR/BiVO4 ternary systems are well characterized, and then their simulated sunlight and visible-light photocatalytic activity were evaluated by the degradation of a typical dye pollutant, rhodamine B (RhB). For comparison, binary systems of Ag/BiVO4 and GR/BiVO4 as well as solitary BiVO4 are also tested under the same conditions. Meanwhile, the separation and transportation of the photogenerated carriers in the simulated sunlight-irradiating Ag/GR/BiVO4 ternary systems are studied by photoelectrochemistry experiments, and the active species generated during the process of photodegradation are investigated by free radical and hole scavenging experiments. On the basis of the above results, mechanism of photocatalytic degradation of RhB over the Ag/GR/BiVO4 ternary system is revealed. Finally, the reusability of the catalyst was evaluated by five consecutive catalytic runs.

  1. Unusual continuous dual absorption peaks in Ca-doped BiFeO3 nanostructures for broadened microwave absorption

    NASA Astrophysics Data System (ADS)

    Li, Zhong-Jun; Hou, Zhi-Ling; Song, Wei-Li; Liu, Xing-Da; Cao, Wen-Qiang; Shao, Xiao-Hong; Cao, Mao-Sheng

    2016-05-01

    Electromagnetic absorption materials have received increasing attention owing to their wide applications in aerospace, communication and the electronics industry, and multiferroic materials with both polarization and magnetic properties are considered promising ceramics for microwave absorption application. However, the insufficient absorption intensity coupled with the narrow effective absorption bandwidth has limited the development of high-performance multiferroic materials for practical microwave absorption. To address such issues, in the present work, we utilize interfacial engineering in BiFeO3 nanoparticles via Ca doping, with the purpose of tailoring the phase boundary. Upon Ca-substitution, the co-existence of both R3c and P4mm phases has been confirmed to massively enhance both dielectric and magnetic properties via manipulating the phase boundary and the destruction of the spiral spin structure. Unlike the commonly reported magnetic/dielectric hybrid microwave absorption composites, Bi0.95Ca0.05FeO3 has been found to deliver unusual continuous dual absorption peaks at a small thickness (1.56 mm), which has remarkably broadened the effective absorption bandwidth (8.7-12.1 GHz). The fundamental mechanisms based on the phase boundary engineering have been discussed, suggesting a novel platform for designing advanced multiferroic materials with wide applications.Electromagnetic absorption materials have received increasing attention owing to their wide applications in aerospace, communication and the electronics industry, and multiferroic materials with both polarization and magnetic properties are considered promising ceramics for microwave absorption application. However, the insufficient absorption intensity coupled with the narrow effective absorption bandwidth has limited the development of high-performance multiferroic materials for practical microwave absorption. To address such issues, in the present work, we utilize interfacial engineering in BiFeO3

  2. Point Defects in Pb-, Bi-, and In-Doped CdZnTe Detectors: Deep-Level Transient Spectroscopy (DLTS) Measurements

    NASA Astrophysics Data System (ADS)

    Gul, R.; Keeter, K.; Rodriguez, R.; Bolotnikov, A. E.; Hossain, A.; Camarda, G. S.; Kim, K. H.; Yang, G.; Cui, Y.; Carcelen, V.; Franc, J.; Li, Z.; James, R. B.

    2012-03-01

    We studied, by current deep-level transient spectroscopy (I-DLTS), point defects induced in CdZnTe detectors by three dopants: Pb, Bi, and In. Pb-doped CdZnTe detectors have a new acceptor trap at around 0.48 eV. The absence of a VCd trap suggests that all Cd vacancies are compensated by Pb interstitials after they form a deep-acceptor complex [[PbCd]+-V{Cd/2-}]-. Bi-doped CdZnTe detectors had two distinct traps: a shallow trap at around 36 meV and a deep donor trap at around 0.82 eV. In detectors doped with In, we noted three well-known traps: two acceptor levels at around 0.18 eV (A-centers) and 0.31 eV (VCd), and a deep trap at around 1.1 eV.

  3. Ionic liquid assisted microwave synthesis route towards color-tunable luminescence of lanthanide- doped BiPO4

    DOE PAGES

    Cybinska, Joanna; Lorbeer, Chantal; Mudring, Anja -Verena

    2015-07-08

    Ln3+-doped (Ln=Sm, Eu, Tb, Dy) nanoparticles of BiPO4 with a particle size below 10 nm were synthesized in a straightforward manner from the appropriate mixture of the respective metal acetates and the task-specific ionic liquids choline or butylammonium dihydrogen-phosphate by conversion in a laboratory microwave (120 °C, 10 min). The ionic liquid acts not only as a solvent and microwave susceptor, but also as the reaction partner and nanoparticle stabilizer. The materials were thoroughly characterized not only with respect to their optical properties but also by PXRD, FT-IR, TEM techniques. Furthermore, depending on the lanthanide, the nanomaterial shows intense luminescencemore » of different colors such as: orange (Sm3+), red (Eu3+), green (Tb3+) or even white (Dy3+).« less

  4. Specific features of Tm 3+ doped BiB 3O 6 glasses fluorescence spectra and their kinetics

    NASA Astrophysics Data System (ADS)

    Majchrowski, A.; Jaroszewicz, L.; Kuznik, W.; Brik, M. G.; Klosowicz, S.; Kityk, I. V.

    2012-02-01

    Synthesis and spectral fluorescent features of the thulium-doped BiB 3O 6 glasses are presented. All spectra were recorded using a pulsed (pulse energy ca. 1 μJ, pulse duration 10 ns) 355 nm third harmonic of 10 kHz Nd:YAG laser as an excitation source. A laser beam was focused in a backscattering geometry onto about 1 mm 2 spot on the surface of a sample. The Andor SR-303 i spectrograph equipped with an Andor DH-501 intensified charge coupled device with spectral resolution up to 1 nm was used as a spectra recorder. The time-resolution of this system can be as low as 5 ns. The decay kinetics was derived from integrated time-resolved spectra. Additionally the absorption and excitation spectra were measured. The main parameters of the Judd-Ofelt analysis were calculated and comparison of the obtained results with corresponding data for other materials was carried out.

  5. Pd-doped Bi2MoO6 plasmonic photocatalysts with enhanced visible light photocatalytic performance

    NASA Astrophysics Data System (ADS)

    Meng, Xiangchao; Zhang, Zisheng

    2017-01-01

    Pd-doped Bi2MoO6 was prepared and investigated for the first time. The prepared samples were characterized by their crystal structures, chemical states, atomic compositions, optical properties and morphologies. The photocatalytic activities of prepared samples under visible light irradiation were determined by degradation of phenol, which is widely found in wastewater from many industrial processes and is difficult to destroy. The sample exhibiting the highest removal efficiency with respect to the degradation of phenol contained 2% Pd. The enhancement effect can be interpreted as the integrated effects of a reduction in the rate of electron-hole recombination, surface plasmon resonance, and production of Cl0. This work sheds light on the potential applications of noble metal nanoparticles in visible light-driven photocatalysis.

  6. Influence of Zr4+ doping on structural and electrical properties of SrBi4Ti4O15 ceramic

    NASA Astrophysics Data System (ADS)

    Nayak, P.; Badapanda, T.; Panigrahi, S.

    2015-06-01

    This article reports a systematic study of doping effects on the structural and electrical properties of layer structured strontium bismuth titanate ceramic. In this study monophasic SrBi4Ti4-xZrxO15 with x=0.00, 0.05, 0.10, 0.15, 0.20, 0.25 ceramics were synthesized from the solid-state reaction route. X-ray diffraction analysis shows that the Zr-modified SBT ceramics have a pure four-layer Aurivillius phase structure. Dielectric properties revealed that the diffuseness of phase transition increases where as corresponding permittivity value decrease with increasing Zr content. Piezoelectric properties of SBTZ ceramics were improved by the modification of Zirconium ion. Moreover, the reason behind for improvement of piezoelectric properties of modified SBTZ ceramics was also discussed.

  7. Ionic liquid assisted microwave synthesis route towards color-tunable luminescence of lanthanide- doped BiPO4

    SciTech Connect

    Cybinska, Joanna; Lorbeer, Chantal; Mudring, Anja -Verena

    2015-07-08

    Ln3+-doped (Ln=Sm, Eu, Tb, Dy) nanoparticles of BiPO4 with a particle size below 10 nm were synthesized in a straightforward manner from the appropriate mixture of the respective metal acetates and the task-specific ionic liquids choline or butylammonium dihydrogen-phosphate by conversion in a laboratory microwave (120 °C, 10 min). The ionic liquid acts not only as a solvent and microwave susceptor, but also as the reaction partner and nanoparticle stabilizer. The materials were thoroughly characterized not only with respect to their optical properties but also by PXRD, FT-IR, TEM techniques. Furthermore, depending on the lanthanide, the nanomaterial shows intense luminescence of different colors such as: orange (Sm3+), red (Eu3+), green (Tb3+) or even white (Dy3+).

  8. Specific features of Tm3+ doped BiB3O6 glasses fluorescence spectra and their kinetics.

    PubMed

    Majchrowski, A; Jaroszewicz, L; Kuznik, W; Brik, M G; Klosowicz, S; Kityk, I V

    2012-02-15

    Synthesis and spectral fluorescent features of the thulium-doped BiB(3)O(6) glasses are presented. All spectra were recorded using a pulsed (pulse energy ca. 1μJ, pulse duration 10ns) 355nm third harmonic of 10kHz Nd:YAG laser as an excitation source. A laser beam was focused in a backscattering geometry onto about 1mm(2) spot on the surface of a sample. The Andor SR-303i spectrograph equipped with an Andor DH-501 intensified charge coupled device with spectral resolution up to 1nm was used as a spectra recorder. The time-resolution of this system can be as low as 5ns. The decay kinetics was derived from integrated time-resolved spectra. Additionally the absorption and excitation spectra were measured. The main parameters of the Judd-Ofelt analysis were calculated and comparison of the obtained results with corresponding data for other materials was carried out.

  9. Infiltrated bunch of solitons in Bi-doped frequency-shifted feedback fibre laser operated at 1450 nm

    NASA Astrophysics Data System (ADS)

    Rissanen, Joona; Korobko, Dmitry A.; Zolotovsky, Igor O.; Melkumov, Mikhail; Khopin, Vladimir F.; Gumenyuk, Regina

    2017-03-01

    Mode-locked fibre laser as a dissipative system is characterized by rich forms of soliton interaction, which take place via internal energy exchange through noisy background in the presence of dispersion and nonlinearity. The result of soliton interaction was either stationary-localized or chaotically-oscillated soliton complexes, which have been shown before as stand-alone in the cavity. Here we report on a new form of solitons complex observed in Bi-doped mode-locked fibre laser operated at 1450 nm. The solitons are arranged in two different group types contemporizing in the cavity: one pulse group propagates as bound solitons with fixed phase relation and interpulse position eventuated in 30 dB spectrum modulation depth; while the other pulses form a bunch with continuously and chaotically moving solitons. The article describes both experimental and theoretical considerations of this effect.

  10. Infiltrated bunch of solitons in Bi-doped frequency-shifted feedback fibre laser operated at 1450 nm

    PubMed Central

    Rissanen, Joona; Korobko, Dmitry A.; Zolotovsky, Igor O.; Melkumov, Mikhail; Khopin, Vladimir F.; Gumenyuk, Regina

    2017-01-01

    Mode-locked fibre laser as a dissipative system is characterized by rich forms of soliton interaction, which take place via internal energy exchange through noisy background in the presence of dispersion and nonlinearity. The result of soliton interaction was either stationary-localized or chaotically-oscillated soliton complexes, which have been shown before as stand-alone in the cavity. Here we report on a new form of solitons complex observed in Bi-doped mode-locked fibre laser operated at 1450 nm. The solitons are arranged in two different group types contemporizing in the cavity: one pulse group propagates as bound solitons with fixed phase relation and interpulse position eventuated in 30 dB spectrum modulation depth; while the other pulses form a bunch with continuously and chaotically moving solitons. The article describes both experimental and theoretical considerations of this effect. PMID:28281677

  11. Structural investigation of Bi doped InSe chalcogenide thin films using Raman spectroscopy

    NASA Astrophysics Data System (ADS)

    Sharma, Shaveta; Sharma, Rita; Kumar, Praveen; Chander, Ravi; Thangaraj, R.; Mian, M.

    2015-05-01

    The infrared transparency of the chalcogenide glasses have been investigated presently for the CO/CO2 laser power in various medical diagnostic applications. The addition of Bi improves the chemical durability and broadens the IR transparency region of various chalcogenide glassy systems. In the present work, we have studied the effect of Bi addition on the structural properties of In-Se thin films by using the RAMAN spectroscopy. The melt quenched bulk ingot of BixIn25-xSe75 (1≤ x≤ 7) alloys were used for the vacuum thermal evaporation of films in a vacuum better than 10-5 mbar. RAMAN bands at 1575, 1354 and 525 cm-1 has been observed, while with the increase in the Bi concentration vibrational band disappear at 525 cm-1 in sample x=7.

  12. Formation of the 110-K superconducting phase in Pb-doped Bi-Sr-Ca-Cu-O thin films

    SciTech Connect

    Kula, W.; Sobolewski, R.; Gorecka, J.; Lewandowski, S.J. )

    1991-09-15

    Investigation of the 110-K Bi{sub 2}Sr{sub 2}Ca{sub 2}Cu{sub 3}O{sub {ital x}} phase formation in superconducting thin films of Bi-based cuprates is reported. The films were dc magnetron sputtered from single Bi(Pb)-Sr-Ca-Cu-O targets of various stoichiometries, and subsequently annealed in air at high temperatures. The influence of the initial Pb content, annealing conditions, as well as the substrate material on the growth of the 110-K phase was investigated. We found that the films, fully superconducting above 100 K could be reproducibly fabricated on various dielectric substrates from Pb-rich targets by optimizing annealing conditions for each initial Pb/Bi ratio. Heavy Pb doping considerably accelerated formation of the 110-K phase, reducing the film annealing time to less than 1 h. Films containing, according to the x-ray measurement, more than 90% of the 110-K phase were obtained on MgO substrates, after sputtering from the Bi{sub 2}Pb{sub 2.5}Sr{sub 2}Ca{sub 2.15}Cu{sub 3.3}O{sub {ital x}} target and annealing in air for 1 h at 870 {degree}C. The films were {ital c}-axis oriented, with 4.5-K-wide superconducting transition, and zero resistivity at 106 K. Their critical current density was 2 {times} 10{sup 2} A/cm{sup 2} at 90 K, and above 10{sup 4} A/cm{sup 2} below 60 K. The growth of the 110-K phase on epitaxial substrates, such as CaNdAlO{sub 4} and SrTiO{sub 3}, was considerably deteriorated, and the presence of the 80- and 10-K phases was detected. Nevertheless, the best films deposited on these substrates were fully superconducting at 104 K and exhibited critical current densities above 2 {times} 10{sup 5} A/cm{sup 2} below 60 K{minus}one order of magnitude greater than the films deposited on MgO.

  13. Dopant activation mechanism of Bi wire-δ-doping into Si crystal, investigated with wavelength dispersive fluorescence x-ray absorption fine structure and density functional theory

    NASA Astrophysics Data System (ADS)

    Murata, Koichi; Kirkham, Christopher; Shimomura, Masaru; Nitta, Kiyofumi; Uruga, Tomoya; Terada, Yasuko; Nittoh, Koh-ichi; Bowler, David R.; Miki, Kazushi

    2017-04-01

    We successfully characterized the local structures of Bi atoms in a wire-δ-doped layer (1/8 ML) in a Si crystal, using wavelength dispersive fluorescence x-ray absorption fine structure at the beamline BL37XU, in SPring-8, with the help of density functional theory calculations. It was found that the burial of Bi nanolines on the Si(0 0 1) surface, via growth of Si capping layer at 400 °C by molecular beam epitaxy, reduced the Bi–Si bond length from 2.79+/- 0.01~{\\mathring{\\text{A}}} to 2.63+/- 0.02 Å. We infer that following epitaxial growth the Bi–Bi dimers of the nanoline are broken, and the Bi atoms are located at substitutional sites within the Si crystal, leading to the shorter Bi–Si bond lengths.

  14. Structure, characterization, and magnetic/electrochemical properties of Ni-doped BiFeO3 nanoparticles

    NASA Astrophysics Data System (ADS)

    Khajonrit, Jessada; Prasoetsopha, Natkrita; Sinprachim, Tanayt; Kidkhunthod, Pinit; Pinitsoontorn, Supree; Maensiri, Santi

    2017-03-01

    The BiFe1‑x Ni x O3 (x  =  0, 0.05, 0.1, 0.2, and 0.3) nanoparticles were prepared by a simple solution method. Their nanostructures were characterized by x-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), x-ray absorption spectroscopy (XAS) and gas absorption techniques. The magnetic properties of the nanoparticles were studied by using a vibrating sample magnetometer (VSM). The increasing of Ni content with decreasing of crystallize size can improve magnetization. Moreover, the samples were fabricated as electrodes to study the electrochemical properties by cyclic voltammetry (CV), galvanostatic charge-discharge (GCD) and electrochemical impedance spectroscopy (EIS). The high specific capacitances of the electrodes are in the range of 193–514 F g‑1. Although the increasing of the Ni content leads to decreasing of the specific capacitances, the 5% Ni-doped BiFeO3 can improve the capacity retention (82%) after 500 cycles at 10 A g‑1. Oral talk at 8th International Workshop on Advanced Materials Science and Nanotechnology (IWAMSN2016), 8–12 November 2016, Ha Long City, Vietnam.

  15. Effect of Mn doping on ultrafast carrier dynamics in thin films of the topological insulator Bi2Se3

    NASA Astrophysics Data System (ADS)

    Glinka, Yuri D.; Babakiray, Sercan; Holcomb, Mikel B.; Lederman, David

    2016-04-01

    Transient reflectivity (TR) measured at laser photon energy 1.51 eV from the indirectly intersurface-coupled topological insulator Bi2-x Mn x Se3 films (12 nm thick) revealed a strong dependence of the rise-time and initial decay-time constants on photoexcited carrier density and Mn content. In undoped samples (x  =  0), these time constants are exclusively governed by electron-electron and electron-phonon scattering, respectively, whereas in films with x  =  0.013-0.27 ultrafast carrier dynamics are completely controlled by photoexcited electron trapping by ionized Mn2+ acceptors and their dimers. The shortest decay-time (~0.75 ps) measured for the film with x  =  0.27 suggests a great potential of Mn-doped Bi2Se3 films for applications in high-speed optoelectronic devices. Using Raman spectroscopy exploiting similar laser photon energy (1.58 eV), we demonstrate that due to indirect intersurface coupling in the films, the photoexcited electron trapping in the bulk enhances the electron-phonon interaction strength in Dirac surface states.

  16. Unusual continuous dual absorption peaks in Ca-doped BiFeO3 nanostructures for broadened microwave absorption.

    PubMed

    Li, Zhong-Jun; Hou, Zhi-Ling; Song, Wei-Li; Liu, Xing-Da; Cao, Wen-Qiang; Shao, Xiao-Hong; Cao, Mao-Sheng

    2016-05-21

    Electromagnetic absorption materials have received increasing attention owing to their wide applications in aerospace, communication and the electronics industry, and multiferroic materials with both polarization and magnetic properties are considered promising ceramics for microwave absorption application. However, the insufficient absorption intensity coupled with the narrow effective absorption bandwidth has limited the development of high-performance multiferroic materials for practical microwave absorption. To address such issues, in the present work, we utilize interfacial engineering in BiFeO3 nanoparticles via Ca doping, with the purpose of tailoring the phase boundary. Upon Ca-substitution, the co-existence of both R3c and P4mm phases has been confirmed to massively enhance both dielectric and magnetic properties via manipulating the phase boundary and the destruction of the spiral spin structure. Unlike the commonly reported magnetic/dielectric hybrid microwave absorption composites, Bi0.95Ca0.05FeO3 has been found to deliver unusual continuous dual absorption peaks at a small thickness (1.56 mm), which has remarkably broadened the effective absorption bandwidth (8.7-12.1 GHz). The fundamental mechanisms based on the phase boundary engineering have been discussed, suggesting a novel platform for designing advanced multiferroic materials with wide applications.

  17. Linear and nonlinear refractive index of As-Se-Ge and Bi doped As-Se-Ge thin films

    NASA Astrophysics Data System (ADS)

    Sharma, Pankaj; Katyal, S. C.

    2010-06-01

    The present work reports the linear and nonlinear refractive index for (As2Se3)90Ge10 and [(As2Se3)90Ge10]95Bi5 thin films. The formulation proposed by Fournier and Snitzer has been used to predict the nonlinear behavior of refractive index. The linear refractive index and Wemple-DiDomenico parameters were used for the determination of nonlinear refractive index in the wavelength region 0.4 to 1.5 μm. Linear refractive index has been determined using the well known Swanepoel method. This is observed that nonlinear refractive index increases linearly with increasing linear refractive index. With Bi addition this has been found that nonlinear refractive index increases by 2.4 times, while on comparing with pure and doped silica glasses results are 2-3 orders higher. Density and molar volume has also been calculated. The obtained results may lead to yield more sensitive optical limiting devices and these glasses may be used as an optical material for high speed communication fibers.

  18. The Gadolinium (Gd3+) and Tin (Sn4+) Co-doped BiFeO3 Nanoparticles as New Solar Light Active Photocatalyst

    PubMed Central

    Irfan, Syed; Rizwan, Syed; Shen, Yang; Li, Liangliang; Asfandiyar, A; Butt, Sajid; Nan, Ce-Wen

    2017-01-01

    The process of photocatalysis is appealing to huge interest motivated by the great promise of addressing current energy and environmental issues through converting solar light directly into chemical energy. However, an efficient solar energy harvesting for photocatalysis remains a critical challenge. Here, we reported a new full solar spectrum driven photocatalyst by co-doping of Gd3+ and Sn4+ into A and B-sites of BiFeO3 simultaneously. The co-doping of Gd3+ and Sn4+ played a key role in hampering the recombination of electron-hole pairs and shifted the band-gap of BiFeO3 from 2.10 eV to 2.03 eV. The Brunauer-Emmett-Teller (BET) measurement confirmed that the co-doping of Gd3+ and Sn4+ into BiFeO3 increased the surface area and porosity, and thus the photocatalytic activity of the Bi0.90Gd0.10Fe0.95Sn0.05O3 system was significantly improved. Our work proposed a new photocatalyst that could degrade various organic dyes like Congo red, Methylene blue, and Methyl violet under irradiation with different light wavelengths and gave guidance for designing more efficient photocatalysts. PMID:28195198

  19. The Gadolinium (Gd3+) and Tin (Sn4+) Co-doped BiFeO3 Nanoparticles as New Solar Light Active Photocatalyst

    NASA Astrophysics Data System (ADS)

    Irfan, Syed; Rizwan, Syed; Shen, Yang; Li, Liangliang; Asfandiyar; Butt, Sajid; Nan, Ce-Wen

    2017-02-01

    The process of photocatalysis is appealing to huge interest motivated by the great promise of addressing current energy and environmental issues through converting solar light directly into chemical energy. However, an efficient solar energy harvesting for photocatalysis remains a critical challenge. Here, we reported a new full solar spectrum driven photocatalyst by co-doping of Gd3+ and Sn4+ into A and B-sites of BiFeO3 simultaneously. The co-doping of Gd3+ and Sn4+ played a key role in hampering the recombination of electron-hole pairs and shifted the band-gap of BiFeO3 from 2.10 eV to 2.03 eV. The Brunauer-Emmett-Teller (BET) measurement confirmed that the co-doping of Gd3+ and Sn4+ into BiFeO3 increased the surface area and porosity, and thus the photocatalytic activity of the Bi0.90Gd0.10Fe0.95Sn0.05O3 system was significantly improved. Our work proposed a new photocatalyst that could degrade various organic dyes like Congo red, Methylene blue, and Methyl violet under irradiation with different light wavelengths and gave guidance for designing more efficient photocatalysts.

  20. Enhanced photocatalytic performance of Er-doped Bi{sub 24}O{sub 31}Br{sub 10}: Facile synthesis and photocatalytic mechanism

    SciTech Connect

    Liu, Zhang Sheng Liu, Zhi Lin; Liu, Jin Long; Zhang, Jing Wen; Zhou, Ting Fei; Ji, Xiang

    2016-04-15

    Highlights: • Er-doped Bi{sub 24}O{sub 31}Br{sub 10} have been prepared via a one-pot solvothermal method. • Er doping drastically improves the photocatalytic activity of Bi{sub 24}O{sub 31}Br{sub 10}. • The enhanced activity is attributed to effective electron trapping and up-conversion process resulting from Er{sup 3+}. • Holes and super-oxide radicals are main active species. - Abstract: Erbium (Er) doped Bi{sub 24}O{sub 31}Br{sub 10} samples were successfully prepared by using a solvothermal method. The samples were characterized by XRD, XPS, SEM, TEM, BET, DRS, PL and EIS. The photocatalytic activity was evaluated by the degradation of rhodamine B (RhB) and methyl orange (MO) under visible light irradiation. The result shows that Er dopant induces a significant improvement in the photocatalytic activity. 1.0% Er–Bi{sub 24}O{sub 31}Br{sub 10} sample exhibits the best photocatalytic performance. The enhanced photocatalytic activity is attributed to the effective trapping of photogenerated electron by Er{sup 3+} ion and the up-conversion process resulting from Er dopant. In addition, it is found that holes and super-oxide radicals play main role in the photocatalytic degradation of RhB and MO.

  1. The Gadolinium (Gd(3+)) and Tin (Sn(4+)) Co-doped BiFeO3 Nanoparticles as New Solar Light Active Photocatalyst.

    PubMed

    Irfan, Syed; Rizwan, Syed; Shen, Yang; Li, Liangliang; Asfandiyar; Butt, Sajid; Nan, Ce-Wen

    2017-02-14

    The process of photocatalysis is appealing to huge interest motivated by the great promise of addressing current energy and environmental issues through converting solar light directly into chemical energy. However, an efficient solar energy harvesting for photocatalysis remains a critical challenge. Here, we reported a new full solar spectrum driven photocatalyst by co-doping of Gd(3+) and Sn(4+) into A and B-sites of BiFeO3 simultaneously. The co-doping of Gd(3+) and Sn(4+) played a key role in hampering the recombination of electron-hole pairs and shifted the band-gap of BiFeO3 from 2.10 eV to 2.03 eV. The Brunauer-Emmett-Teller (BET) measurement confirmed that the co-doping of Gd(3+) and Sn(4+) into BiFeO3 increased the surface area and porosity, and thus the photocatalytic activity of the Bi0.90Gd0.10Fe0.95Sn0.05O3 system was significantly improved. Our work proposed a new photocatalyst that could degrade various organic dyes like Congo red, Methylene blue, and Methyl violet under irradiation with different light wavelengths and gave guidance for designing more efficient photocatalysts.

  2. Enhanced thermoelectric properties and development of nanotwins in Na-doped Bi0.5Sb1.5Te3 alloy

    NASA Astrophysics Data System (ADS)

    Kim, Hyun; Lee, Jae Ki; Park, Su-Dong; Ryu, Byungki; Lee, Ji Eun; Kim, Bong-Seo; Min, Bok-Ki; Joo, Sung-Jae; Lee, Hee-Woong; Cho, Young-Rae

    2016-03-01

    We found that Na is a good source to develop twin structures in the Bi-Te system, such as Ag as noted in a previous study. The twin boundaries had a considerable influence on reductions of the lattice thermal conductivity due to phonon scattering by the nano-ordered layers and on reductions of the electrical resistivity owing to the defects generated by the substitution of Na into the cation sites. Here, we report the enhanced thermoelectric properties of a Na-doped p-type Bi0.5Sb1.5Te3 alloy. Measurements show that the electrical resistivity and the Seebeck coefficient decrease with Na doping due to an increase in the free carrier (hole) concentration and that the lattice thermal conductivity decreases with Na doping. The achieved maximum ZT value was 1.20 at 423 K, which is approximately 20% higher than that of Bi0.5Sb1.5Te3 under the same fabrication conditions. These results were achievable by controlling the morphology of the twin structure and the carrier concentration by means of Na doping. [Figure not available: see fulltext.

  3. On the origin of near-IR luminescence in Bi-doped materials (II). Subvalent monocation Bi⁺ and cluster Bi₅³⁺ luminescence in AlCl₃/ZnCl₂/BiCl₃ chloride glass.

    PubMed

    Romanov, Alexey N; Fattakhova, Zukhra T; Veber, Alexander A; Usovich, Olga V; Haula, Elena V; Korchak, Vladimir N; Tsvetkov, Vladimir B; Trusov, Lev A; Kazin, Pavel E; Sulimov, Vladimir B

    2012-03-26

    Broadband NIR photoluminescence (from 1000 to 2500 nm) was observed from partially reduced AlCl₃/ZnCl₂/BiCl₃ glass, containing subvalent bismuth species. The luminescence consists of three bands, assigned to Bi⁺ , Bi₂⁴⁺, and Bi₅³⁺ ions. The physical and optical characteristics of these centers and possible contribution to NIR luminescence from bismuth-doped oxide glasses are discussed.

  4. Room temperature ferromagnetism with large magnetic moment at low field in rare-earth-doped BiFeO₃ thin films.

    PubMed

    Kim, Tae-Young; Hong, Nguyen Hoa; Sugawara, T; Raghavender, A T; Kurisu, M

    2013-05-22

    Thin films of rare earth (RE)-doped BiFeO3 (where RE=Sm, Ho, Pr and Nd) were grown on LaAlO3 substrates by using the pulsed laser deposition technique. All the films show a single phase of rhombohedral structure with space group R3c. The saturated magnetization in the Ho- and Sm-doped films is much larger than the values reported in the literature, and is observed at quite a low field of 0.2 T. For Ho and Sm doping, the magnetization increases as the film becomes thinner, suggesting that the observed magnetism is mostly due to a surface effect. In the case of Nd doping, even though the thin film has a large magnetic moment, the mechanism seems to be different.

  5. Quantitative Raman Measurement of the Evolution of the Cooper-pair Density with Doping in Bi2Sr2CaCu2O8+δ Superconductors

    SciTech Connect

    Blanc, S.; Gu, G.; Gallais, Y.; Sacuto, A.; Cazayous, M.; Méasson, M.A.; Wen, J.S.; Xu, Z.J.

    2009-10-08

    We report Raman measurements on Bi{sub 2}Sr{sub 2}CaCu{sub 2}O{sub 8+{delta}} single crystals that allow us to quantitatively evaluate the doping dependence of the density of Cooper pairs in the superconducting state. We show that the drastic loss of Cooper pairs in the antinodal region as the doping level is reduced is concomitant with a deep alteration of the quasiparticles dynamic above T{sub c} and consistent with a pseudogap that competes with superconductivity. Our data also reveal that the overall density of Cooper pairs evolves with doping, distinctly from the superfluid density above the doping level p{sub c} = 0.2.

  6. A new aspect of single-layered cuprate superconductors — 90 K superconductors for Ca-doped Bi2Sr2CuO6+δ single crystals

    NASA Astrophysics Data System (ADS)

    Yoshizaki, R.; Yamamoto, T.; Ikeda, H.; Kadowaki, K.

    2012-12-01

    We found that the highest Tc (Tc max) of the superconductors in Bi-2201 phase was 80-90 K for the partially Ca substituted Bi2Sr2CuO6+δ for Sr. The superconductivity was confirmed to be bulk effect from a specific heat jump around Tc. By the findings the correlation between the structure and Tc max has been made clear and simple with respect to the distance between Cu and the apical oxygen for the single-layered cuprate superconductors in the hole doped system.

  7. Passive Q-switching with GaAs or Bi-doped GaAs saturable absorber in Tm:LuAG laser operating at 2μm wavelength.

    PubMed

    Wu, Lin; Li, Dechun; Zhao, Shengzhi; Yang, Kejian; Li, Xiangyang; Wang, Reng; Liu, Ji

    2015-06-15

    We report the first demonstration of a diode pumped passively Q-switched Tm:LuAG laser near 2μm wavelength with Bi-doped or undoped GaAs wafer as saturable absorber. For Bi-doped GaAs saturable absorber, stable Q-switched pulses with duration of 63.3ns under a repetition rate of 132.7 kHz and pulse energy of 5.51μJ are generated. In comparison to the passively Q-switched laser with undoped GaAs saturable absorber, the laser with Bi-doped GaAs can produce shorter pulses and higher peak power at almost the same incident pump power. The results suggest that Bi-doped GaAs can be an attractive candidate of saturable absorber for Q-switched laser near 2μm wavelength.

  8. Effect of Bi2O3 on the structural and spectroscopic properties of Sm3+ ions doped sodiumfluoroborate glasses

    NASA Astrophysics Data System (ADS)

    Mariyappan, M.; Arunkumar, S.; Marimuthu, K.

    2016-02-01

    Trivalent samarium ions doped bismuth sodiumfluoroborate glasses have been prepared with the chemical composition 40B2O3+(40-x)Na2CO3+xBi2O3+19CaF2+1Sm2O3 (where x = 0, 10, 20, 30 and 40 in wt%) following the conventional melt quenching technique. The structural and spectroscopic characterizations have been carried out using XRD, FTIR and UV-Vis-NIR, luminescence and decay measurements. Judd-Ofelt (JO) theory has been used to study the effect of local field environment around the Sm3+ ion site to calculate the radiative properties. Bonding parameters and JO intensity parameters (Ω2, Ω4, Ω6) were determined from the absorption spectra to explore the nature of bonding and symmetry around the Sm3+ ion site. The spectroscopic quality factor (χ = Ω4/Ω6) and asymmetry ratio (R/O) have been determined to elucidate the potential strength of the stimulated emission and asymmetry around the Sm3+ ion site in the prepared glasses. Using JO theory, various radiative properties like transition probability (A), effective bandwidth (Δλeff), stimulated emission cross-section (σpE) and branching ratio (βR) for the 4G5/2 → 6H5/2, 6H7/2, 6H9/2 emission levels of the prepared glasses were determined and compared with the reported literature. The decay curves corresponding to the 4G5/2 level of the Sm3+ ions were measured and are found to be single exponential for lower Bi2O3 content and turn to become non-exponential for higher Bi2O3 content and is due to the donor to acceptor energy transfer through cross-relaxation process. Among the prepared glasses, 40BiNFBS glass exhibit higher A, βR, σpE and η values and is suggested for useful gain medium and reddish orange laser applications.

  9. Synthesis and optical properties of Pr and Ti doped BiFeO3 ceramics

    NASA Astrophysics Data System (ADS)

    Singh, Vikash; Sharma, Subhash; Dwivedi, R. K.

    2016-05-01

    Bi1-xPrxFe1-xTixO3 ceramics with x = 0.00, 0.10 and 0.20 were synthesized by solid state reaction method. Rietveld fitting of diffraction data reveals structural transition from rhombohedral phase (R3C) for x ≤ 0.10 to orthorhombic phase (Pnma) for x = 0.20. FTIR spectra exhibit broad absorption bands, which may be due to the overlapping of Fe-O and Bi-O vibrations in these ceramics. UV-visible spectroscopy results show strong absorption of light in the spectral range of 400-600 nm, indicating optical band gap in the visible region for these samples.

  10. Structural, electrical and multiferroic properties of La-doped mullite Bi{sub 2}Fe{sub 4}O{sub 9} thin films

    SciTech Connect

    Raghavan, C.M.; Kim, J.W.; Kim, J.-W.; Kim, S.S.

    2015-10-15

    Highlights: • Chemical solution deposited La-doped Bi{sub 2}Fe{sub 4}O{sub 9} thin film. • Structural, electrical and multiferroic properties were investigated. • La-doped Bi{sub 2}Fe{sub 4}O{sub 9} exhibited enhanced electrical and multiferroic properties. - Abstract: Thin films of (Bi{sub 2−x}La{sub x})Fe{sub 4}O{sub 9} (x = 0 and x = 0.05) were prepared on Pt(1 1 1)/Ti/SiO{sub 2}/Si(1 0 0) substrates by using a chemical solution deposition method to investigate structural, microstructural, electrical and multiferroic properties. Both the thin films were crystallized in mullite type phases with orthorhombic structures containing no secondary and impurity phases, which was confirmed by X-ray diffraction and Raman spectroscopy studies. The (Bi{sub 1.95}La{sub 0.05})Fe{sub 4}O{sub 9} thin film exhibited improved electrical and multiferroic properties at room-temperature. The leakage current density of the (Bi{sub 1.95}La{sub 0.05})Fe{sub 4}O{sub 9} thin film was one order of magnitude lower than that of the Bi{sub 2}Fe{sub 4}O{sub 9} thin film. Furthermore, in the thin film form, (Bi{sub 2−x}La{sub x})Fe{sub 4}O{sub 9} exhibited better stability against electrical breakdowns and enhanced multiferroic properties.

  11. Origin of the low critical observing temperature of the quantum anomalous Hall effect in V-doped (Bi, Sb)2Te3 film

    DOE PAGES

    Li, W.; Claassen, M.; Chang, Cui -Zu; ...

    2016-09-07

    The experimental realization of the quantum anomalous Hall (QAH) effect in magnetically-doped (Bi, Sb)2Te3 films stands out as a landmark of modern condensed matter physics. However, ultra-low temperatures down to few tens of mK are needed to reach the quantization of Hall resistance, which is two orders of magnitude lower than the ferromagnetic phase transition temperature of the films. Here, we systematically study the band structure of V-doped (Bi, Sb)2Te3 thin films by angle-resolved photoemission spectroscopy (ARPES) and show unambiguously that the bulk valence band (BVB) maximum lies higher in energy than the surface state Dirac point. Finally, our resultsmore » demonstrate clear evidence that localization of BVB carriers plays an active role and can account for the temperature discrepancy.« less

  12. Origin of the low critical observing temperature of the quantum anomalous Hall effect in V-doped (Bi, Sb)2Te3 film

    PubMed Central

    Li, W.; Claassen, M.; Chang, Cui-Zu; Moritz, B.; Jia, T.; Zhang, C.; Rebec, S.; Lee, J. J.; Hashimoto, M.; Lu, D.-H.; Moore, R. G.; Moodera, J. S.; Devereaux, T. P.; Shen, Z.-X.

    2016-01-01

    The experimental realization of the quantum anomalous Hall (QAH) effect in magnetically-doped (Bi, Sb)2Te3 films stands out as a landmark of modern condensed matter physics. However, ultra-low temperatures down to few tens of mK are needed to reach the quantization of Hall resistance, which is two orders of magnitude lower than the ferromagnetic phase transition temperature of the films. Here, we systematically study the band structure of V-doped (Bi, Sb)2Te3 thin films by angle-resolved photoemission spectroscopy (ARPES) and show unambiguously that the bulk valence band (BVB) maximum lies higher in energy than the surface state Dirac point. Our results demonstrate clear evidence that localization of BVB carriers plays an active role and can account for the temperature discrepancy. PMID:27599406

  13. Origin of the low critical observing temperature of the quantum anomalous Hall effect in V-doped (Bi, Sb)2Te3 film.

    PubMed

    Li, W; Claassen, M; Chang, Cui-Zu; Moritz, B; Jia, T; Zhang, C; Rebec, S; Lee, J J; Hashimoto, M; Lu, D-H; Moore, R G; Moodera, J S; Devereaux, T P; Shen, Z-X

    2016-09-07

    The experimental realization of the quantum anomalous Hall (QAH) effect in magnetically-doped (Bi, Sb)2Te3 films stands out as a landmark of modern condensed matter physics. However, ultra-low temperatures down to few tens of mK are needed to reach the quantization of Hall resistance, which is two orders of magnitude lower than the ferromagnetic phase transition temperature of the films. Here, we systematically study the band structure of V-doped (Bi, Sb)2Te3 thin films by angle-resolved photoemission spectroscopy (ARPES) and show unambiguously that the bulk valence band (BVB) maximum lies higher in energy than the surface state Dirac point. Our results demonstrate clear evidence that localization of BVB carriers plays an active role and can account for the temperature discrepancy.

  14. Origin of the low critical observing temperature of the quantum anomalous Hall effect in V-doped (Bi, Sb)2Te3 film

    NASA Astrophysics Data System (ADS)

    Li, W.; Claassen, M.; Chang, Cui-Zu; Moritz, B.; Jia, T.; Zhang, C.; Rebec, S.; Lee, J. J.; Hashimoto, M.; Lu, D.-H.; Moore, R. G.; Moodera, J. S.; Devereaux, T. P.; Shen, Z.-X.

    2016-09-01

    The experimental realization of the quantum anomalous Hall (QAH) effect in magnetically-doped (Bi, Sb)2Te3 films stands out as a landmark of modern condensed matter physics. However, ultra-low temperatures down to few tens of mK are needed to reach the quantization of Hall resistance, which is two orders of magnitude lower than the ferromagnetic phase transition temperature of the films. Here, we systematically study the band structure of V-doped (Bi, Sb)2Te3 thin films by angle-resolved photoemission spectroscopy (ARPES) and show unambiguously that the bulk valence band (BVB) maximum lies higher in energy than the surface state Dirac point. Our results demonstrate clear evidence that localization of BVB carriers plays an active role and can account for the temperature discrepancy.

  15. Doping dependence of the coupling of electrons to bosonic modes in the single-layer high-temperature Bi2Sr2CuO6 superconductor

    SciTech Connect

    Meevasana, W.

    2010-06-02

    A recent highlight in the study of high-Tc superconductors is the observation of band renormalization or self-energy effects on the quasiparticles. This is seen in the form of kinks in the quasiparticle dispersions as measured by photoemission and interpreted as signatures of collective bosonic modes coupling to the electrons. Here we compare for the first time the self-energies in an optimally doped and strongly overdoped, nonsuperconducting single-layer Bi-cuprate (Bi{sub 2}Sr{sub 2}CuO{sub 6}). In addition to the appearance of a strong overall weakening, we also find that the weight of the self-energy in the overdoped system shifts to higher energies. We present evidence that this is related to a change in the coupling to c-axis phonons due to the rapid change of the c-axis screening in this doping range.

  16. Electronic structure of self-doped layered Eu3F4Bi2S4 material revealed by x-ray absorption spectroscopy and photoelectron spectromicroscopy

    NASA Astrophysics Data System (ADS)

    Paris, E.; Sugimoto, T.; Wakita, T.; Barinov, A.; Terashima, K.; Kandyba, V.; Proux, O.; Kajitani, J.; Higashinaka, R.; Matsuda, T. D.; Aoki, Y.; Yokoya, T.; Mizokawa, T.; Saini, N. L.

    2017-01-01

    We have studied the electronic structure of Eu3F4Bi2S4 using a combination of Eu L3-edge x-ray absorption spectroscopy (XAS) and space-resolved angle-resolved photoemission spectroscopy (ARPES). From the Eu L3-edge XAS, we have found that the Eu in this system is in mixed valence state with coexistence of Eu2 +/Eu3 + . The bulk charge doping was estimated to be ˜0.3 per Bi site in Eu3F4Bi2S4 , which corresponds to the nominal x in a typical REO1 -xFxBiS2 system (RE: rare-earth elements). From the space-resolved ARPES, we have ruled out the possibility of any microscale phase separation of Eu valence in the system. Using a microfocused beam we have observed the band structure as well as the Fermi surface that appeared similar to other compounds of this family with disconnected rectangular electronlike pockets around the X point. The Luttinger volume analysis gives the effective carrier to be 0.23 electrons per Bi site in Eu3F4Bi2S4 , indicating that the system is likely to be in the underdoped region of its superconducting phase diagram.

  17. Thermal properties of transition metals doped (A: Co, Ni and Cu) BiFe0.9A0.1O3

    NASA Astrophysics Data System (ADS)

    Parveen, Azra; Agrawal, Shraddha; Azam, Ameer

    2016-05-01

    The synthesis of pure and transition metals (Co, Ni and Cu) doped BiFeO3nanoparticles, a promising G-type antiferromagnetic material have been done by auto combustion method using citric acid as a fuel. Microstructural analyses were done by XRD and FTIR. The thermal stability of the sample was determined by thermo gravimetric analysis (TGA) and heat flow rate was plotted by differential scanning calorimetric (DSC).

  18. Magnetocaloric effect in pristine and Bi-doped Pr0.6Sr0.4MnO3 manganite

    NASA Astrophysics Data System (ADS)

    Daivajna, Mamatha D.; Rao, Ashok

    2016-11-01

    Near room temperature, magnetocaloric effect in pristine and Bi-doped Pr0.6Sr0.4MnO3 manganites has been studied using in-field heat capacity measurements. The Debye temperature (θD) for the pristine sample was estimated to be 522 K and its value increases to 530 K for the Bi-doped sample with x=0.05. The entropy associated with paramagnetic (PM) to ferromagnetic (FM) transition is found to be 2.4 J/mol K and 2.3 J/mol K for x=0 and 0.05 compositions respectively. The estimated values of adiabatic temperature ∆Tad for the samples with x=0 and x=0.05 are respectively 2.2 K and 1.9 K for 0-6 Tesla. The maximum isothermal change in entropy, ∆SM for the sample Pr0.6Sr0.4MnO3 with transition temperature 306 K is found to be 2.7 J/kg-K with application of external magnetic field of 2 T and for Bi-doped sample (with x=0.05) the isothermal change in entropy reduces to 2.0 J/kg-K. The calculated maximum values of the isothermal entropy changes, ∆SM for the pristine sample, vary in the range 1.7-3.9 J/kg-K for a magnetic field change of 1-6 T. The present results suggest that these compounds can be possible candidates as magnetic refrigerants. This results in a large relative cooling power (RCP) around 93.5 J kg-1 K for the pristine sample under an application of magnetic field of 2 T. On contrary, with Bi-doping, RCP decreases to 56 J kg-1 K at external field of 2 T.

  19. Mössbauer study and magnetic properties of M-type barium hexaferrite doped with Co + Ti and Bi + Ti ions.

    PubMed

    Belous, A G; V'yunov, O I; Pashkova, E V; Ivanitskii, V P; Gavrilenko, O N

    2006-12-28

    Using X-ray powder diffractions, Mössbauer spectroscopy, and magnetic measurements, the effect of complex dopants (Co2+ + Ti4+) and (Bi3+ + Ti4+) on the fine structure and magnetic properties of M-type barium hexaferrite prepared by hydroxide and carbonate precipitations has been studied. The distribution of cations over five nonequivalent positions of barium hexaferrite with magnetoplumbite structure is discussed. It has been shown that doped barium hexaferrite can be used for high-coercitivity data storage media.

  20. Synthesis of Fe-doped Bi2O3 nanocatalyst and its sonophotocatalytic activity on synthetic dye and real textile wastewater.

    PubMed

    Dinesh, G Kumaravel; Anandan, Sambandam; Sivasankar, Thirugnanasambandam

    2016-10-01

    The catalysts such as Fe, Bi2O3, and Fe-doped Bi2O3 were synthesized for the sonophotocatalytic treatment of synthetic dye and real textile wastewater. The resultant catalysts were characterized for its size and uniform shape using x-ray diffractogram (XRD) and scanning electron microscopy (SEM) which signified the nanorod shape formed Bi2O3. The higher ultraviolet light absorbance capacity of the catalysts was also evident using diffuse reflectance spectroscopy (DRS). Initially, the effect of conventional parameters such as initial pH, gas bubbling (argon, oxygen, air and nitrogen) and oxidant addition (H2O2 and peroxymonosulfate) in the presence of sonolysis (22 and 37 kHz frequency) and photolysis (UV-C light) on 10 ppm Basic Brown 1 dye was studied. The results showed that highest decolorization of 62 % was attained for 3 g/L peroxymonosulfate under 37 kHz frequency sonolysis treatment. Secondly, with the catalyst study, highest of 46 % dye color removal was obtained with 4 g/L Fe under 37 kHz frequency sonolysis treatment. The sonophotocatalytic treatment of dye with Fe-doped Bi2O3 catalyst in combination with peroxymonosulfate showed highest color removal of 99 %. Finally, the sonophotocatalytic treatment of real textile wastewater in the presence of 3 g/L Fe-doped Bi2O3 and 6 g/L peroxymonosulfate reduced the total organic carbon (TOC) and chemical oxygen demand (COD) level to 77 and 91 %, respectively, in 180 min. The reported treatment process was found to treat the synthetic dye and real textile wastewater effectively.

  1. AC Susceptibilities in Zn Doped (Bi,Pb)(Sr,Ba):2223 Superconductor

    NASA Astrophysics Data System (ADS)

    Pop, V.

    AC susceptibility measurements as a function of temperature and amplitude of alternative magnetic field have been carried out on the samples (Bi,Pb)(Sr,Ba):2223 with Cu substituted by Zn at a concentration of x = 0.00, 0.02 and 0.05. The decrease of intergrain and intragrain critical temperatures with increasing x is in agreement with the increase of the residual resistivity. Using Muller critical state model and the linear dependence of Tp for the maximum of imaginary χ''(T) peak, as a function of AC field amplitude, the intergranular pining force density was obtained. The intergrain properties are more influenced than the intragrain ones.

  2. Luminescent rare earth vanadate nanoparticles doped with Eu3+ and Bi3 for sensing and imaging applications

    NASA Astrophysics Data System (ADS)

    Escudero, Alberto; Carrillo-Carrión, Carolina; Zyuzin, Mikhail; Hartmann, Raimo; Ashraf, Sumaira; Parak, Wolfgang J.

    2016-03-01

    Nanoparticles (NPs) are attracting interest in nanomedicine due to their potential medical applications, ranging from optical biolabels and contrast agents for magnetic resonance imaging to carriers for drug and gene delivery for disease therapy.[1] Rare earth (RE) based nanophosphors exhibit important advantages compared with other available luminescent materials, such as quantum dots and nanostructures functionalized with organic dyes, due to their lower toxicities, photostabilities, high thermal and chemical stabilities, high luminescence quantum yields, and sharp emission bands.[2] Yttrium orthovanadate NPs doped with Eu3+ and Bi3+, functionalized with poly acryl acid (PAA), and excitable by near-ultraviolet light have been synthesized by homogeneous precipitation at 120 °C from solutions of rare earth precursors (yttrium acetylacetonate and europium nitrate), bismuth nitrate, sodium orthovanadate, and PAA, in an ethylene glycol/water mixture. Quasispheres with sizes from 93 to 51 nm were obtained. The as synthesized NPs were already functionalized with PAA. The NPs showed the typical red luminescence of Eu3+, which can be excited with near-UV light through an energy transfer from the vanadate anion. The presence of Bi3+ shifts the maximum of the broad excitation band from 280 nm to 342 nm. This excitation path is much more efficient than the direct excitation of the Eu3+ electronic levels, and results in a much higher luminescence. The NPs can be uptaken by HeLa cells, and are eventually located in the lysosomes after being internalized. Finally, the functionalization with PAA provides -COOH anchors for adding functional ligands of biomedical interest that can be used for sensing applications.

  3. Study of morphology effects on magnetic interactions and band gap variations for 3d late transition metal bi-doped ZnO nanostructures by hybrid DFT calculations

    SciTech Connect

    Datta, Soumendu Baral, Sayan; Mookerjee, Abhijit; Kaphle, Gopi Chandra

    2015-08-28

    Using density functional theory (DFT) based electronic structure calculations, the effects of morphology of semiconducting nanostructures on the magnetic interaction between two magnetic dopant atoms as well as a possibility of tuning band gaps have been studied in the case of the bi-doped (ZnO){sub 24} nanostructures with the impurity dopant atoms of the 3d late transition metals—Mn, Fe, Co, Ni, and Cu. To explore the morphology effect, three different structures of the host (ZnO){sub 24} nano-system, having different degrees of spatial confinement, have been considered: a two dimensional nanosheet, a one dimensional nanotube, and a finite cage-shaped nanocluster. The present study employs hybrid density functional theory to accurately describe the electronic structure of all the systems. It is shown here that the magnetic coupling between the two dopant atoms remains mostly anti-ferromagnetic in the course of changing the morphology from the sheet geometry to the cage-shaped geometry of the host systems, except for the case of energetically most stable bi-Mn doping, which shows a transition from ferromagnetic to anti-ferromagnetic coupling with decreasing aspect ratio of the host system. The effect of the shape change, however, has a significant effect on the overall band gap variations of both the pristine as well as all the bi-doped systems, irrespective of the nature of the dopant atoms and provides a means for easy tunability of their optoelectronic properties.

  4. The effect of Yttrium on the Ca and Sr planes of Y-doped Bi 2Sr 2Ca 1Cu 2O 8

    NASA Astrophysics Data System (ADS)

    Alméras, P.; Berger, H.; Margaritondo, G.

    1993-08-01

    Photoemission spectromicroscopy experiments on a series of Y-doped Bi 2Sr 2Ca 1Cu 2O 8 single crystals show that the doping changes the valence of copper as required for the observed modification of the critical temperature. The doping, however, affects with substitutional reactions not only the CaO planes, but also the SrO planes. Des expériences de photoémission sur une série de monocristaux de Bi 2Sr 2Ca 1Cu 2O 8 dopés avec de l'yttrium montrent que le dopage change la valence du cuivre, comme on dopage, pourtant, ne modifie pas seulement les plans CaO par des réactions de substitution, mais également les plans SrO. Esperimenti di fotoemissione condotti su una serie di monocristalli di Bi 2Sr 2Ca 2O 8 con impurezze di Y mostrano che tali impurezze modificano la valenza del rame, com'é indipendentemente reso necessario dal fatto che si osservano dei cambiamenti della temperature di transizione. Si nota peraltro che le impurezze non modificano solamente i piani CaO mediante reazioni di sostituzione, ma anche i piani SrO.

  5. Magnetotransport measurements on Mn-doped Bi2Se3 Thin Films

    NASA Astrophysics Data System (ADS)

    Babakiray, Sercan; Johnson, Trent; Borisov, Pavel; Lederman, David

    2014-03-01

    The intrinsic n type conductivity of bulk topological insulator Bi2Se3 was compensated with Mn dopant to increase the resistivity. In addition, the magnetic character of Mn ions causes a gap opening of the corresponding Dirac cone surface states. We investigated the effect of the Mn on crystal structure as well as the transport and magnetic properties of Bi2-xMnxSe3 thin films grown by molecular beam epitaxy on Al2O3 (0001) substrates. Characteristic features in the form of the Kondo effect and weak anti-localization were observed at different Mn concentrations up to temperatures of 50 K accompanied by enhanced resistance and reduced carrier mobility. The phase coherence length of the two-dimensional sheet conductance decreased with increasing Mn-concentration, however the protected surface states were still present up to x =0.063. This work was supported by a Research Challenge Grant from West Virginia Higher Education Policy Commission (HEPC.dsr.12.29). Some of the work was performed using the West Virginia University Shared Research Facilities.

  6. Robust surface doping of Bi2Se3 by rubidium intercalation.

    PubMed

    Bianchi, Marco; Hatch, Richard C; Li, Zheshen; Hofmann, Philip; Song, Fei; Mi, Jianli; Iversen, Bo B; El-Fattah, Zakaria M Abd; Löptien, Peter; Zhou, Lihui; Khajetoorians, Alexander A; Wiebe, Jens; Wiesendanger, Roland; Wells, Justin W

    2012-08-28

    Rubidium adsorption on the surface of the topological insulator Bi(2)Se(3) is found to induce a strong downward band bending, leading to the appearance of a quantum-confined two-dimensional electron gas state (2DEG) in the conduction band. The 2DEG shows a strong Rashba-type spin-orbit splitting, and it has previously been pointed out that this has relevance to nanoscale spintronics devices. The adsorption of Rb atoms, on the other hand, renders the surface very reactive, and exposure to oxygen leads to a rapid degrading of the 2DEG. We show that intercalating the Rb atoms, presumably into the van der Waals gaps in the quintuple layer structure of Bi(2)Se(3), drastically reduces the surface reactivity while not affecting the promising electronic structure. The intercalation process is observed above room temperature and accelerated with increasing initial Rb coverage, an effect that is ascribed to the Coulomb interaction between the charged Rb ions. Coulomb repulsion is also thought to be responsible for a uniform distribution of Rb on the surface.

  7. Comparison of Sn-doped and nonstoichiometric vertical-Bridgman-grown crystals of the topological insulator Bi{sub 2}Te{sub 2}Se

    SciTech Connect

    Kushwaha, S. K. Gibson, Q. D.; Cava, R. J.; Xiong, J.; Ong, N. P.; Pletikosic, I.; Weber, A. P.; Fedorov, A. V.; Valla, T.

    2014-04-14

    A comparative study of the properties of topological insulator Bi{sub 2}Te{sub 2}Se (BTS) crystals grown by the vertical Bridgeman method is described. Two defect mechanisms that create acceptor impurities to compensate for the native n-type carriers are compared: Bi excess, and light Sn doping. Both methods yield low carrier concentrations and an n-p crossover over the length of the grown crystal boules, but lower carrier concentrations and higher resistivities are obtained for the Sn-doped crystals, which reach carrier concentrations as low as 8 × 10{sup 14} cm{sup −3}. Further, the temperature dependent resistivities for the Sn-doped crystals display strongly activated behavior at high temperatures, with a characteristic energy of half the bulk band gap. The (001) cleaved Sn-doped BTS crystals display high quality Shubnikov de Haas (SdH) quantum oscillations due to the topological surface state electrons. Angle resolved photoelectron spectroscopy (ARPES) characterization shows that the Fermi energy (E{sub F}) for the Sn-doped crystals falls cleanly in the surface states with no interference from the bulk bands, which the Dirac point for the surface states lies approximately 60 meV below the top of the bulk valence band maximum, and allows for a determination of the bulk and surface state carrier concentrations as a function of Energy near E{sub F}. Electronic structure calculations that compare Bi excess and Sn dopants in BTS demonstrate that Sn acts as a special impurity, with a localized impurity band that acts as a charge buffer occurring inside the bulk band gap. We propose that the special resonant level character of Sn in BTS gives rise to the exceptionally low carrier concentrations and activated resistivities observed.

  8. Synthesis of activated charcoal supported Bi-doped TiO2 nanocomposite under solar light irradiation for enhanced photocatalytic activity

    NASA Astrophysics Data System (ADS)

    Chandraboss, V. L.; Kamalakkannan, J.; Senthilvelan, S.

    2016-11-01

    In this study, activated charcoal (AC) supported bismuth (Bi)-doped Titanium dioxide (TiO2) nanocomposite was synthesized by precipitation method. The photocatalytic activity of AC-Bi/TiO2 was investigated for the degradation of methylene blue (MB) in aqueous solution under solar light irradiation. The incorporation of Bi3+ into the TiO2 lattice shifts the absorbance of TiO2 to the visible region then the addition of high adsorption capacity activated charcoal to improve the efficiency of TiO2. AC-Bi/TiO2 is found to be more efficient than Bi/TiO2 and undoped TiO2 for the degradation of MB under solar light irradiation. Surface morphology and bulk composition of the composite was obtained using high resolution-scanning electron microscopy with energy dispersive X-ray analysis. The crystal structure evolution and elemental composition were analyzed by combining Fourier transform-Raman spectroscopy, X-ray diffraction and X-ray photoelectron spectroscopy. The ultraviolet-visible (UV-vis) absorption spectra show that the absorption edge for the composite with Bi3+ has red shift as compared with that of undoped TiO2. UV-vis diffuse reflectance spectra demonstrated a decrease in the direct band gap of AC-Bi/TiO2. BET surface area, pore radius and pore volume of the materials were calculated by applying the BET equation to the sorption isotherms. The production of hydroxyl radicals (rad OH) on the surface of solar light irradiated materialswere detected by photoluminescence technique using coumarin as a probe molecule. The mechanism of photocatalytic effect of the AC-Bi/TiO2 was proposed for the degradation of MB under solar light irradiation.

  9. Interstitial BiO molecule as a broadband IR luminescence centre in bismuth-doped silica glass

    SciTech Connect

    Sokolov, V O; Plotnichenko, V G; Dianov, Evgenii M

    2011-12-31

    Experimental data on absorption and luminescence in optical fibres with a Bi : SiO{sub 2} glass core are compared to experimentally determined and calculated spectroscopic properties of the BiO molecule. The results suggest that the IR luminescence of Bi : SiO{sub 2} glass is due to interstitial BiO molecules. This assumption is supported by quantum-chemical simulation results for a BiO molecule in a ring interstice of the silica glass network.

  10. First principles study on the structural, magnetic, electronic and optical properties of un-doped and La-doped BiFe0.75Mn0.125Ti0.125O3

    NASA Astrophysics Data System (ADS)

    Zhang, Ren; Chen, Wei; Gao, Ning; Zhu, Yiyi; Mao, Weiwei; Chu, Liang; Zhang, Jian; Yang, Jianping; Li, Xing'ao; Huang, Wei

    2016-10-01

    Based on the generalized gradient approximation (GGA), the structural, magnetic, electronic and optical properties of BiFe0.75Ti0.125Mn0.125O3 (TM) and Bi1 - yLayFe0.75Ti0.125Mn0.125O3 (y = 0.125, 0.25) (LTM) were researched by the first principles. Compared with the pure BiFeO3 (zero magnetic moment), the magnetic moment of TM gets improved greatly and the value computed here is ∼ 3μB, while La doping almost has no effect on that of TM. Ti and Mn co-doping converts the indirect band gap of BiFeO3 (2.20 eV) to a direct band gap of TM (0.95 eV). The bandwidth of TM is similar to that of LTM1 (1 La atom, y = 0.125) within the tolerance, but smaller than that of LTM2 (2 La atoms, y = 0.25). This is consistent with their gradually increased absorption edges to infrared region, and suggests that doping La into the B sites of TM makes it more potential application on photovoltaic. According to the results of reflectivity, (Ti, Mn)-codoped BiFeO3 is transparent, while LTM is nontransparent in the visible light region which indicates more potential valuable for visible-light-responsive devices. To gain some insight into the optical properties of the samples, three relationships have been discussed: (1) the reflectivity and energy loss function, (2) the extinction coefficient and the imaginary part of the dielectric function, and (3) the refractive index and the real part of the dielectric function.

  11. Shockley-Read-Hall lifetimes in CdTe

    SciTech Connect

    Buurma, C.; Sivananthan, S.; Krishnamurthy, S.

    2014-07-07

    A combination of first principles electronic structure calculations, Green's function method, and empirical tight-binding Hamiltonian method is used to evaluate the minority carrier lifetimes of CdTe due to recombination via native point defects in CdTe. For defect energy levels near mid-gap, our calculated value of the Shockley-Read-Hall capture cross section for both electrons and holes is ~10⁻¹³ cm², which is considerably different from the most commonly employed values. We further find that minority carrier lifetimes in doped CdTe are affected more by defect levels closer to the Fermi level than those in the mid-gap.

  12. Photoluminescence, enhanced ferroelectric, and dielectric properties of Pr{sup 3+}-doped SrBi{sub 2}Nb{sub 2}O{sub 9} multifunctional ceramics

    SciTech Connect

    Zou, Hua; Yu, Yao; Li, Jun; Cao, Qiufeng; Wang, Xusheng; Hou, Junwei

    2015-09-15

    Pr{sup 3+}-doped SrBi{sub 2}Nb{sub 2}O{sub 9} (SBN) multifunctional ceramics were synthesized by the conventional solid state method. The photoluminescence (PL) excitation and emission spectra, enhanced ferroelectric and dielectric properties were investigated. The X-ray diffraction (XRD) and FESEM analyses indicated that the samples were simple phase and uniform flake-structure. Under the 250–350 nm ultraviolet (UV) excitations, the red emission was obtained and the optimal emission intensity was investigated when Pr doping level was 0.005 mol. With the increasing of the Pr{sup 3+} ion contents, the ferroelectric properties were enhanced obviously. As a new multifunctional material, the Pr{sup 3+}-doped SBN ceramics could be used for a wide range of application, such as integrated electro-optical devices.

  13. Nonvolatile bipolar resistive switching in Ba-doped BiFeO3 thin films

    NASA Astrophysics Data System (ADS)

    Deng, Haoliang; Zhang, Ming; Wei, Jizhou; Chu, Shangjie; Du, Minyong; Yan, Hui

    2015-07-01

    The Bi0.8Ba0.2FeO3 (BBFO) thin film was deposited on the conducting Nb:SrTiO3 (NSTO) (1 0 0) single crystal substrate by pulsed laser deposition. Nonvolatile bipolar resistive switching effect was observed in an Au/BBFO/NSTO capacitor structure. By changing the polarity of the external pulsed voltage, the device could be switched reversibly between two stable resistance states. The resistive ratio is about 10 at a read voltage of -0.5 V after applying ±1.5 V pulse voltages. The mechanism of the resistive switching behavior could be attributed to the electric field induced migration of oxygen vacancies, which changes the height and width of the barrier at the BBFO/NSTO interface.

  14. Solid oxide fuel cell bi-layer anode with gadolinia-doped ceria for utilization of solid carbon fuel

    NASA Astrophysics Data System (ADS)

    Kellogg, Isaiah D.; Koylu, Umit O.; Dogan, Fatih

    Pyrolytic carbon was used as fuel in a solid oxide fuel cell (SOFC) with a yttria-stabilized zirconia (YSZ) electrolyte and a bi-layer anode composed of nickel oxide gadolinia-doped ceria (NiO-GDC) and NiO-YSZ. The common problems of bulk shrinkage and emergent porosity in the YSZ layer adjacent to the GDC/YSZ interface were avoided by using an interlayer of porous NiO-YSZ as a buffer anode layer between the electrolyte and the NiO-GDC primary anode. Cells were fabricated from commercially available component powders so that unconventional production methods suggested in the literature were avoided, that is, the necessity of glycine-nitrate combustion synthesis, specialty multicomponent oxide powders, sputtering, or chemical vapor deposition. The easily-fabricated cell was successfully utilized with hydrogen and propane fuels as well as carbon deposited on the anode during the cyclic operation with the propane. A cell of similar construction could be used in the exhaust stream of a diesel engine to capture and utilize soot for secondary power generation and decreased particulate pollution without the need for filter regeneration.

  15. Effect of Sn doping on nonlinear optical properties of quaternary Se-Sn-(Bi,Te) chalcogenide thin films

    NASA Astrophysics Data System (ADS)

    Yadav, Preeti; Sharma, Ambika

    2015-08-01

    The aim of this work is to report the effect of Sn doping on the third order nonlinear optical properties of chalcogenide Se84-xTe15Bi1.0Snx thin films. Melt quenching technique has been used for the preparation of bulk chalcogenide glasses. Thin films of the studied composition are deposited on cleaned glass substrate by thermal evaporation technique. Optical band gap (Eg) is calculated by using Tauc extrapolation method and is found to increase from 1.27 eV to 1.64 eV with the incorporation of Sn content. Stryland approach is utilized for the calculation of two photon absorption coefficient (β2). The nonlinear refractive index (n2) and third order susceptibility (χ(3) are calculated using Tichy and Ticha approach. The result shows that nonlinear refractive index (n2) follows the same trend as that of linear refractive index (n). The values of n2 of studied composition as compared to pure silica are 1000-5000 times higher.

  16. Effect of Sn doping on nonlinear optical properties of quaternary Se-Sn-(Bi,Te) chalcogenide thin films

    SciTech Connect

    Yadav, Preeti Sharma, Ambika

    2015-08-28

    The aim of this work is to report the effect of Sn doping on the third order nonlinear optical properties of chalcogenide Se{sub 84-x}Te{sub 15}Bi{sub 1.0}Sn{sub x} thin films. Melt quenching technique has been used for the preparation of bulk chalcogenide glasses. Thin films of the studied composition are deposited on cleaned glass substrate by thermal evaporation technique. Optical band gap (E{sub g}) is calculated by using Tauc extrapolation method and is found to increase from 1.27 eV to 1.64 eV with the incorporation of Sn content. Stryland approach is utilized for the calculation of two photon absorption coefficient (β{sub 2}). The nonlinear refractive index (n{sub 2}) and third order susceptibility (χ{sup (3}) are calculated using Tichy and Ticha approach. The result shows that nonlinear refractive index (n{sub 2}) follows the same trend as that of linear refractive index (n). The values of n{sub 2} of studied composition as compared to pure silica are 1000-5000 times higher.

  17. Microstructure and conduction behavior of BiFeO3 thin film deposited on Ge-doped ZnO

    NASA Astrophysics Data System (ADS)

    Raghavan, Chinnambedu Murugesan; Choi, Ji Ya; Kim, Sang Su

    2017-02-01

    BiFeO3 (BFO) thin films were deposited on a Ge-doped ZnO (GZO)/Si(100) and a Pt(111)/Ti/SiO2/Si(100) using a pulsed laser deposition technique. An improved crystal growth property was observed for the BFO thin film deposited on the GZO/Si(100). The BFO thin film, which was deposited on the (00 l) textured GZO/Si(100), exhibited preferred ( l00) orientated grains, while randomly orientated grains were observed for the thin film deposited on the Pt(111)/Ti/SiO2/Si(100). When compared with the Pt/BFO/Pt capacitor, the GZO/BFO/GZO capacitor exhibited improved conduction behaviors, such as a low leakage current density and high stability against electrical breakdown. From the J-E curves, conduction of the GZO/BFO/GZO and the Pt/BFO/Pt capacitors was found to be dominated by Ohmic and space charge limited conductions at low and high electric field, respectively.

  18. Effect of Bi2O3 on spectroscopic and structural properties of Er3+ doped cadmium bismuth borate glasses.

    PubMed

    Sanghi, S; Pal, I; Agarwal, A; Aggarwal, M P

    2011-12-01

    Glasses with composition 20CdO·xBi(2)O(3)·(79.5-x)B(2)O(3) (15≤x≤35, x in mol%) containing 0.5 mol% of Er(3+) ions were prepared by melt-quench technique (1150°C in air). The amorphous nature of the glasses was confirmed by X-ray diffraction. The spectroscopic properties of the glasses were investigated using optical absorption spectra and fluorescence spectra. The phenomenological Judd-Ofelt intensity parameters Ω(λ) (λ=2, 4, 6) were determined from the spectral intensities of absorption bands in order to calculate the radiative transition probability (A(R)), radiative life time (τ(R)), branching ratios (β(R)) for various excited luminescent states. Using the near infrared emission spectra, full width at half maxima (FWHM), stimulated emission cross-section (σ(e)) and figure of merit (FOM) were evaluated and compared with other hosts. Especially, the numerical values of these parameters indicate that the emission transition (4)I(13/2)→(4)I(15/2) at 1.506 μm in Er(3+)-doped cadmium bismuth borate glasses may be useful in optical communication.

  19. Single-Crystal CdTe Homojunction Structures for Solar Cell Applications

    NASA Astrophysics Data System (ADS)

    Su, Peng-Yu; Dahal, Rajendra; Wang, Gwo-Ching; Zhang, Shengbai; Lu, Toh-Ming; Bhat, Ishwara B.

    2015-09-01

    We report two different CdTe homojunction solar cell structures. Single-crystal CdTe homojunction solar cells were grown on GaAs single-crystal substrates by metalorganic chemical vapor deposition. Arsenic and iodine were used as dopants for p-type and n-type CdTe, respectively. Another homojunction solar cell structure was fabricated by growing n-type CdTe directly on bulk p-type CdTe single-crystal substrates. The electrical properties of the different layers were characterized by Hall measurements. When arsine was used as arsenic source, the highest hole concentration was ~6 × 1016 cm-3 and the activation efficiency was ~3%. Very abrupt arsenic doping profiles were observed by secondary ion mass spectrometry. For n-type CdTe with a growth temperature of 250°C and a high Cd/Te ratio the electron concentration was ~4.5 × 1016 cm-3. Because of the 300 nm thick n-type CdTe layer, the short circuit current of the solar cell grown on the bulk CdTe substrate was less than 10 mA/cm2. The open circuit voltage of the device was 0.86 V. According to a prediction based on measurement of short circuit current density ( J sc) as a function of open circuit voltage ( V oc), an open circuit voltage of 0.92 V could be achieved by growing CdTe solar cells on bulk CdTe substrates.

  20. Stabilisation of Fe2O3-rich Perovskite Nanophase in Epitaxial Rare-earth Doped BiFeO3 Films

    PubMed Central

    Zhang, Huairuo; Reaney, Ian M.; Marincel, Daniel M.; Trolier-McKinstry, Susan; Ramasse, Quentin M.; MacLaren, Ian; Findlay, Scott D.; Fraleigh, Robert D.; Ross, Ian M.; Hu, Shunbo; Ren, Wei; Mark Rainforth, W.

    2015-01-01

    Researchers have demonstrated that BiFeO3 exhibits ferroelectric hysteresis but none have shown a strong ferromagnetic response in either bulk or thin film without significant structural or compositional modification. When remanent magnetisations are observed in BiFeO3 based thin films, iron oxide second phases are often detected. Using aberration-corrected scanning transmission electron microscopy, atomic resolution electron energy loss spectrum-mapping and quantitative energy dispersive X-ray spectroscopy analysis, we reveal the existence of a new Fe2O3-rich perovskite nanophase, with an approximate formula (Fe0.6Bi0.25Nd0.15)3+ Fe3+O3, formed within epitaxial Ti and Nd doped BiFeO3 perovskite films grown by pulsed laser deposition. The incorporation of Nd and Bi ions on the A-site and coherent growth with the matrix stabilise the Fe2O3-rich perovskite phase and preliminary density functional theory calculations suggest that it should have a ferrimagnetic response. Perovskite-structured Fe2O3 has been reported previously but never conclusively proven when fabricated at high-pressure high-temperature. This work suggests the incorporation of large A-site species may help stabilise perovskite-structured Fe2O3. This finding is therefore significant not only to the thin film but also to the high-pressure community. PMID:26272264

  1. Synthesis and luminescence of Eu(3+)-doped in triple phosphate Ca8MgBi(PO4)7 with whitlockite structure.

    PubMed

    Zhang, Zhi-Wei; Ren, Yan-Jun; Liu, Lu; Zhang, Jian-Ping; Peng, You-Shun

    2015-12-01

    Triple whitlockite-type structure-based red phosphors Ca8 MgBi1-x(PO4)7:xEu(3+) (x = 0.10, 0.20, 0.30, 0.40, 0.50, 0.60, 0.70, 0.80 and 1.00) were synthesized by a conventional solid-state reaction route and characterized by their X-ray crystal structures. The X-ray diffraction (XRD) patterns, Fourier transform infrared spectra, morphologies, photoluminescence spectra, UV/Vis reflectance spectra, decay times and the International Commission on Illumination (CIE) chromaticity coordinates of Ca8MgBi1-x(PO4)7:xEu(3+) were analyzed. Eu-doped Ca8MgBi(PO4)7 phosphors exhibited strong red luminescence with peaks at 616 nm due to the (5)D0 → (7)F2 electric dipole transition of Eu(3+) ions after excitation at 396 nm. The UV/Vis spectra indicated that the band gap of Ca8MgBi0.30(PO4)7:0.70Eu(3+) is larger than that of Ca8MgBi(PO4)7. The phosphor developed in this study has great potential as a red-light-emitting phosphor for UV light-emitting diodes.

  2. Ferromagnetism of magnetically doped topological insulators in Cr{sub x}Bi{sub 2−x}Te{sub 3} thin films

    SciTech Connect

    Ni, Y.; Zhang, Z. Hadimani, R. L.; Tuttle, G.; Jiles, D. C.; Nlebedim, I. C.

    2015-05-07

    We investigated the effect of magnetic doping on magnetic and transport properties of Bi{sub 2}Te{sub 3} thin films. Cr{sub x}Bi{sub 2−x}Te{sub 3} thin films with x = 0.03, 0.14, and 0.29 were grown epitaxially on mica substrate with low surface roughness (∼0.4 nm). It is found that Cr is an electron acceptor in Bi{sub 2}Te{sub 3} and increases the magnetization of Cr{sub x}Bi{sub 2−x}Te{sub 3}. When x = 0.14 and 0.29, ferromagnetism appears in Cr{sub x}Bi{sub 2−x}Te{sub 3} thin films, where anomalous Hall effect and weak localization of magnetoconductance were observed. The Curie temperature, coercivity, and remnant Hall resistance of thin films increase with increasing Cr concentration. The Arrott-Noakes plot demonstrates that the critical mechanism of the ferromagnetism can be described better with 3D-Heisenberg model than with mean field model. Our work may benefit for the practical applications of magnetic topological insulators in spintronics and magnetoelectric devices.

  3. Stabilisation of Fe2O3-rich Perovskite Nanophase in Epitaxial Rare-earth Doped BiFeO3 Films.

    PubMed

    Zhang, Huairuo; Reaney, Ian M; Marincel, Daniel M; Trolier-McKinstry, Susan; Ramasse, Quentin M; MacLaren, Ian; Findlay, Scott D; Fraleigh, Robert D; Ross, Ian M; Hu, Shunbo; Ren, Wei; Rainforth, W Mark

    2015-08-14

    Researchers have demonstrated that BiFeO3 exhibits ferroelectric hysteresis but none have shown a strong ferromagnetic response in either bulk or thin film without significant structural or compositional modification. When remanent magnetisations are observed in BiFeO3 based thin films, iron oxide second phases are often detected. Using aberration-corrected scanning transmission electron microscopy, atomic resolution electron energy loss spectrum-mapping and quantitative energy dispersive X-ray spectroscopy analysis, we reveal the existence of a new Fe2O3-rich perovskite nanophase, with an approximate formula (Fe0.6Bi0.25Nd0.15)(3+) Fe(3+)O3, formed within epitaxial Ti and Nd doped BiFeO3 perovskite films grown by pulsed laser deposition. The incorporation of Nd and Bi ions on the A-site and coherent growth with the matrix stabilise the Fe2O3-rich perovskite phase and preliminary density functional theory calculations suggest that it should have a ferrimagnetic response. Perovskite-structured Fe2O3 has been reported previously but never conclusively proven when fabricated at high-pressure high-temperature. This work suggests the incorporation of large A-site species may help stabilise perovskite-structured Fe2O3. This finding is therefore significant not only to the thin film but also to the high-pressure community.

  4. Design of epitaxial CdTe solar cells on InSb substrates

    DOE PAGES

    Song, Tao; Kanevce, Ana; Sites, James R.

    2015-11-01

    Epitaxial CdTe has been shown by others to have a radiative recombination rate approaching unity, high carrier concentration, and low defect density. It has, therefore, become an attractive candidate for high-efficiency solar cells, perhaps becoming competitive with GaAs. The choice of substrate is a key design feature for epitaxial CdTe solar cells, and several possibilities (CdTe, Si, GaAs, and InSb) have been investigated by others. All have challenges, and these have generally been addressed through the addition of intermediate layers between the substrate and CdTe absorber. InSb is an attractive substrate choice for CdTe devices, because it has a closemore » lattice match with CdTe, it has low resistivity, and it is easy to contact. However, the valence-band alignment between InSb and p-type CdTe, which can both impede hole current and enhance forward electron current, is not favorable. Three strategies to address the band-offset problem are investigated by numerical simulation: heavy doping of the back part of the CdTe layer, incorporation of an intermediate CdMgTe or CdZnTe layer, and the formation of an InSb tunnel junction. Lastly, wach of these strategies is predicted to be helpful for higher cell performance, but a combination of the first two should be most effective.« less

  5. Design of epitaxial CdTe solar cells on InSb substrates

    SciTech Connect

    Song, Tao; Kanevce, Ana; Sites, James R.

    2015-11-01

    Epitaxial CdTe has been shown by others to have a radiative recombination rate approaching unity, high carrier concentration, and low defect density. It has, therefore, become an attractive candidate for high-efficiency solar cells, perhaps becoming competitive with GaAs. The choice of substrate is a key design feature for epitaxial CdTe solar cells, and several possibilities (CdTe, Si, GaAs, and InSb) have been investigated by others. All have challenges, and these have generally been addressed through the addition of intermediate layers between the substrate and CdTe absorber. InSb is an attractive substrate choice for CdTe devices, because it has a close lattice match with CdTe, it has low resistivity, and it is easy to contact. However, the valence-band alignment between InSb and p-type CdTe, which can both impede hole current and enhance forward electron current, is not favorable. Three strategies to address the band-offset problem are investigated by numerical simulation: heavy doping of the back part of the CdTe layer, incorporation of an intermediate CdMgTe or CdZnTe layer, and the formation of an InSb tunnel junction. Lastly, wach of these strategies is predicted to be helpful for higher cell performance, but a combination of the first two should be most effective.

  6. Host-Sensitized NIR Quantum Cutting Emission in Nd(3+) Doped GdNbO4 Phosphors and Effect of Bi(3+) Ion Codoping.

    PubMed

    Shahi, Praveen Kumar; Singh, Priyam; Rai, Shyam Bahadur; Bahadur, Amresh

    2016-02-15

    Host-sensitized near-infrared quantum cutting (QC) emission has been demonstrated in Nd(3+) doped Gd(1-x)Nd(x)NbO4 phosphors for various x values. Further, the effect of Bi(3+) ion addition as a sensitizer on near-infrared QC is studied in detail. X-ray diffraction confirms a monoclinic structure for pure and Nd(3+) doped phosphors. Pulsed laser excitation at 266 nm of Gd(1-x)Nd(x)NbO4 and Gd(0.99-x)Nd(x)Bi(0.01)NbO4 causes efficient room-temperature energy transfer from the NbO4(3-) to the Nd(3+) ions and the NbO4(3-) and Bi(3+) ions to the Nd(3+) ions, respectively, which emits more than one near-infrared photon for single impinging ultraviolet photon. The emission band of Nd(3+) shows unusual character where the intensity of the (4)F(3/2)-(4)I(9/2) transition at 888 nm is higher than the intensity of the transition (4)F(3/2)-(4)I(11/2) at 1064 nm, due to energy transfer from GdNbO4 host to Nd(3+) ion. Using photoluminescence lifetime studies, the quantum cutting efficiencies are found to be the maximum 166% and 172% for Gd(0.95)Nd(0.05)NbO4 and Gd(0.94)Nd(0.05)Bi(0.01)NbO4, respectively. The present study could establish Nd(3+) ion as an alternative of Yb(3+) ion for near-infrared quantum cutting. This work facilitates the probing of Nd(3+) ions doped phosphor materials for next generation Si-solar cells.

  7. Crystal structure and magnetic properties of the Cr-doped spiral antiferromagnet BiMnFe{sub 2}O{sub 6}

    SciTech Connect

    Batuk, Dmitry; De Dobbelaere, Christopher; Tsirlin, Alexander A.; Abakumov, Artem M.; Hardy, An; Van Bael, Marlies K.; Greenblatt, Martha; Hadermann, Joke

    2013-09-01

    Graphical abstract: - Highlights: • The substitution of Cr for Mn in BiMnFe{sub 2}O{sub 6} is possible by the solution–gel method. • The BiCr{sub x}Mn{sub 1−x}Fe{sub 2}O{sub 6} solid solution is obtained for the x values up to 0.3. • Increasing Cr content lowers the temperature of the antiferromagnetic ordering. - Abstract: We report the Cr{sup 3+} for Mn{sup 3+} substitution in the BiMnFe{sub 2}O{sub 6} structure. The BiCr{sub x}Mn{sub 1−x}Fe{sub 2}O{sub 6} solid solution is obtained by the solution–gel synthesis technique for the x values up to 0.3. The crystal structure investigation using a combination of X-ray powder diffraction and transmission electron microscopy demonstrates that the compounds retain the parent BiMnFe{sub 2}O{sub 6} structure (for x = 0.3, a = 5.02010(6)Å, b = 7.06594(7)Å, c = 12.6174(1)Å, S.G. Pbcm, R{sub I} = 0.036, R{sub P} = 0.011) with only a slight decrease in the cell parameters associated with the Cr{sup 3+} for Mn{sup 3+} substitution. Magnetic susceptibility measurements suggest strong similarities in the magnetic behavior of BiCr{sub x}Mn{sub 1−x}Fe{sub 2}O{sub 6} (x = 0.2; 0.3) and parent BiMnFe{sub 2}O{sub 6}. Only T{sub N} slightly decreases upon Cr doping that indicates a very subtle influence of Cr{sup 3+} cations on the magnetic properties at the available substitution rates.

  8. Growth and Characterization of High-Quality Single Crystals of Ni- and Zn-Doped Bi2Sr2Ca(Cu2-xMx)O8+δ (M = Ni or Zn) High-Temperature Superconductors

    NASA Astrophysics Data System (ADS)

    Liu, Shan-Yu; Zhang, Wen-Tao; Zhao, Lin; Liu, Hai-Yun; Wu, Yue; Liu, Guo-Dong; Dong, Xiao-Li; Zhou, Xing-Jiang

    2012-08-01

    High-quality large single crystals of Ni- and Zn-doped Bi2Sr2Ca(Cu2-xMx)O8+δ (M = Ni or Zn) have been successfully grown by the traveling solvent floating zone technique. The single crystals are characterized by compositional and structural analyses and their physical properties are investigated by magnetic susceptibility and resistivity measurements. A record high critical temperature with a Tc = 97.5 K has been achieved in the annealed pristine Bi2212 single crystal. Substitution of Cu by Ni or Zn reduces the superconducting transition temperature when compared with pristine Bi2Sr2CaCu2O8+δ (Bi2212) grown under similar conditions. The successful growth of such pristine Ni- and Zn-doped Bi2212 single crystals will facilitate studies of the relationship between the magnetism and superconductivity in high-temperature cuprate superconductors.

  9. Investigation of Optical Nonlinearities in Bi-Doped Se-Te Chalcogenide Thin Films

    NASA Astrophysics Data System (ADS)

    Yadav, Preeti; Sharma, Ambika

    2015-03-01

    The present paper reports the nonlinear optical properties of chalcogenide Se85- x Te15Bi x (0 ≤ x ≤ 5) thin films. The formulation proposed by Boling, Fournier, and Snitzer and Tichy and Ticha has been used to compute the nonlinear refractive index n 2. The two-photon absorption coefficient β 2, and first- and third-order susceptibilities [ χ (1) and χ (3)] are also reported. The nonlinear refractive index n 2 is well correlated with the linear refractive index n and Wemple-DiDomenico (WDD) parameters, in turn depending on the density ρ and molar volume V m of the system. The density of the system is calculated experimentally by using Archimedes' principle. The linear optical parameters, viz. n, WDD parameters, and optical bandgap E g, are measured experimentally using ellipsometric curves obtained by spectrophotometry. The composition-dependent behavior of n 2 is analyzed on the basis of various parameters, viz. density, bond distribution, cohesive energy (CE), and optical bandgap E g, of the system. The variation of n 2 and β 2 with changing bandgap E g is also reported. The values of n 2 and χ (3) of the investigated chalcogenides are compared with those of pure silica, oxide, and other Se-based glasses.

  10. Synthesis, thermal and electrical properties of Al-doped Bi4V1.8Cu0.2O10.7

    NASA Astrophysics Data System (ADS)

    Essalim, R.; Ammar, A.; Tanouti, B.; Mauvy, F.

    2016-08-01

    Partial substitution of copper with aluminum in Bi4V1.8Cu0.2O10.7 has led to the Bi4V1.8Cu0.2-xAlxO10.7+x/2 solid solution. X-ray diffraction and thermal analysis have shown that the compounds with x=0.05 and x=0.10 are tetragonal with γ‧ form of Bi4V2O11, while the compound with x=0.15 is of β polymorph. The effect of Al3+ doping on electrical conductivity has been studied using Electrochemical Impedance Spectroscopy. The electrical conductivity of doped samples along with the amount of Al3+ has been studied by electrochemical impedance spectroscopy in the temperature range 250-700 °C. The slope changes observed in the Arrhenius plots agree with the microstructural transitions occurring in these compounds. The highest ionic conductivity values are obtained for the sample with x=0.05.

  11. Defect properties of Sb- and Bi-doped CuInSe{sub 2}: The effect of the deep lone-pair s states

    SciTech Connect

    Park, Ji-Sang; Yang, Ji-Hui; Ramanathan, Kannan; Wei, Su-Huai

    2014-12-15

    Bi or Sb doping has been used to make better material properties of polycrystalline Cu{sub 2}(In,Ga)Se{sub 2} as solar cell absorbers, including the experimentally observed improved electrical properties. However, the mechanism is still not clear. Using first-principles method, we investigate the stability and electronic structure of Bi- and Sb-related defects in CuInSe{sub 2} and study their effects on the doping efficiency. Contrary to previous thinking that Bi or Sb substituted on the anion site, we find that under anion-rich conditions, the impurities can substitute on cation sites and are isovalent to In because of the formation of the impurity lone pair s states. When the impurities substitute for Cu, the defects act as shallow double donors and help remove the deep In{sub Cu} level, thus resulting in the improved carrier life time. On the other hand, under anion-poor conditions, impurities at the Se site create amphoteric deep levels that are detrimental to the device performance.

  12. Influence of La doping on structural and dielectric properties of SrBi{sub 2}Nb{sub 2}O{sub 9} ceramics

    SciTech Connect

    Verma, Maya; Sreenivas, K.; Gupta, Vinay

    2009-01-15

    Lanthanum doped SrBi{sub 2}Nb{sub 2}O{sub 9} ceramics with the chemical formula SrBi{sub 2-x}La{sub x}Nb{sub 2}O{sub 9} (SBLN) (x=0-0.5) have been prepared through conventional solid state route. X-ray diffraction reveals the shrinkage of unit cell of strontium bismuth niobate with incorporation of La{sup 3+} dopant, having no lone pair electrons. Shifting of Raman phonon modes indicates the reduced rattling space of NbO{sub 6} octahedra with increase in La doping concentration. Further, the softening of lowest frequency phonon mode with increasing x in SBLN shows the transition from ferroelectric to paraelectric at room temperature. The dielectric properties for all the compositions are studied as a function of temperature (25 to 500 deg. C) over the frequency range of 10 kHz-1 MHz. With increase in lanthanum doping concentration the phase transition becomes diffused and transition temperature gets shifted toward lower temperature. A phase transition from normal ferroelectric to paraelectric has been observed via relaxor-type ferroelectrics with increase in x. The frequency dependence of transition temperature was studied in terms of Vogel-Fulcher relation for SBLN (x=0.4)

  13. The layered double hydroxide route to Bi-Zn co-doped TiO₂ with high photocatalytic activity under visible light.

    PubMed

    Benalioua, Bahia; Mansour, Meriem; Bentouami, Abdelhadi; Boury, Bruno; Elandaloussi, El Hadj

    2015-05-15

    In this work, a co-doped Bi-Zn-TiO₂ photocatalist is synthesized by an original synthesis route of layered double hydroxide followed by heat treatment at 670 °C. After characterization the photocatalyst efficiency is estimated by the photo-discoloration of an anionic dye (indigo carmine) under visible light and compare to TiO₂-P25 as reference material. In this new photocatalyst, anatase and ZnO wurtzite are the only identified crystalline phase, rutile and Bi₂O₃ being undetected. Moreover, the binding energy of Bi determined (XPS analysis) is different from the one of Bi in Bi₂O₃. Compared to TiO₂-P25, the absorption is red shifted (UV-vis DRS) and the Bi-Zn-TiO₂ photocatalyst showed sorption capacity toward indigo carmine higher than that TiO₂-P25. The kinetics of the photo-discoloration is faster with Bi-Zn-TiO₂ than with TiO₂-P25. Indeed, a complete discoloration is obtained after 70 min and 120 min in the presence of Bi-Zn-TiO₂ and TiO₂-P25 respectively. The identification of the responsible species on photo-discoloration was carried out in the presence of different scavengers. The study showed that the first responsible is h(+) specie with a moderate contribution of superoxide anion radical and a minor contribution of the hydroxyl radical. The material showed high stability after five uses with the same rate of photo-discoloration.

  14. Study of Gd-doped Bi{sub 2}Te{sub 3} thin films: Molecular beam epitaxy growth and magnetic properties

    SciTech Connect

    Harrison, S. E.; Huo, Y.; Harris, J. S.; Collins-McIntyre, L. J.; Hesjedal, T.; Li, S.; Baker, A. A.; Shelford, L. R.; Laan, G. van der; Pushp, A.; Parkin, S. S. P.; Arenholz, E.

    2014-01-14

    Incorporation of magnetic dopants into topological insulators to break time-reversal symmetry is a prerequisite for observing the quantum anomalous Hall (QAHE) effect and other novel magnetoelectric phenomena. GdBiTe{sub 3} with a Gd:Bi ratio of 1:1 is a proposed QAHE system, however, the reported solubility limit for Gd doping into Bi{sub 2}Te{sub 3} bulk crystals is between ∼0.01 and 0.05. We present a magnetic study of molecular beam epitaxy grown (Gd{sub x}Bi{sub 1–x}){sub 2}Te{sub 3} thin films with a high Gd concentration, up to x ≈ 0.3. Magnetometry reveals that the films are paramagnetic down to 1.5 K. X-ray magnetic circular dichroism at the Gd M{sub 4,5} edge at 1.5 K reveals a saturation field of ∼6 T, and a slow decay of the magnetic moment with temperature up to 200 K. The Gd{sup 3+} ions, which are substitutional on Bi sites in the Bi{sub 2}Te{sub 3} lattice, exhibit a large atomic moment of ∼7 μ{sub B}, as determined by bulk-sensitive superconducting quantum interference device magnetometry. Surface oxidation and the formation of Gd{sub 2}O{sub 3} lead to a reduced moment of ∼4 μ{sub B} as determined by surface-sensitive x-ray magnetic circular dichroism. Their large atomic moment makes these films suitable for incorporation into heterostructures, where interface polarization effects can lead to the formation of magnetic order within the topological insulators.

  15. Device Fabrication using Crystalline CdTe and CdTe Ternary Alloys Grown by MBE

    SciTech Connect

    Zaunbrecher, Katherine; Burst, James; Seyedmohammadi, Shahram; Malik, Roger; Li, Jian V.; Gessert, Timothy A.; Barnes, Teresa

    2015-06-14

    We fabricated epitaxial CdTe:In/CdTe:As homojunction and CdZnTe/CdTe and CdMgTe/CdTe heterojunction devices grown on bulk CdTe substrates in order to study the fundamental device physics of CdTe solar cells. Selection of emitter-layer alloys was based on passivation studies using double heterostructures as well as band alignment. Initial results show significant device integration challenges, including low dopant activation, high resistivity substrates and the development of low-resistance contacts. To date, the highest open-circuit voltage is 715 mV in a CdZnTe/CdTe heterojunction following anneal, while the highest fill factor of 52% was attained in an annealed CdTe homojunction. In general, all currentvoltage measurements show high series resistance, capacitancevoltages measurements show variable doping, and quantum efficiency measurements show low collection. Ongoing work includes overcoming the high resistance in these devices and addressing other possible device limitations such as non-optimum junction depth, interface recombination, and reduced bulk lifetime due to structural defects.

  16. The simultaneous enhancement of photorefraction and optical damage resistance in MgO and Bi2O3 co-doped LiNbO3 crystals

    PubMed Central

    Zheng, Dahuai; Kong, Yongfa; Liu, Shiguo; Chen, Muling; Chen, Shaolin; Zhang, Ling; Rupp, Romano; Xu, Jingjun

    2016-01-01

    For a long time that optical damage was renamed as photorefraction, here we find that the optical damage resistance and photorefraction can be simultaneously enhanced in MgO and Bi2O3 co-doped LiNbO3 (LN:Bi,Mg). The photorefractive response time of LN:Bi,Mg was shortened to 170 ms while the photorefractive sensitivity reached up to 21 cm2/J. Meanwhile, LN:Bi,Mg crystals could withstand a light intensity higher than 106  W/cm2 without apparent optical damage. Our experimental results indicate that photorefraction doesn’t equal to optical damage. The underground mechanism was analyzed and attributed to that diffusion dominates the transport process of charge carriers, that is to say photorefraction causes only slight optical damage under diffusion mechanism, which is very important for the practical applications of photorefractive crystals, such as in holographic storage, integrated optics and 3D display. PMID:26837261

  17. The simultaneous enhancement of photorefraction and optical damage resistance in MgO and Bi2O3 co-doped LiNbO3 crystals

    NASA Astrophysics Data System (ADS)

    Zheng, Dahuai; Kong, Yongfa; Liu, Shiguo; Chen, Muling; Chen, Shaolin; Zhang, Ling; Rupp, Romano; Xu, Jingjun

    2016-02-01

    For a long time that optical damage was renamed as photorefraction, here we find that the optical damage resistance and photorefraction can be simultaneously enhanced in MgO and Bi2O3 co-doped LiNbO3 (LN:Bi,Mg). The photorefractive response time of LN:Bi,Mg was shortened to 170 ms while the photorefractive sensitivity reached up to 21 cm2/J. Meanwhile, LN:Bi,Mg crystals could withstand a light intensity higher than 106  W/cm2 without apparent optical damage. Our experimental results indicate that photorefraction doesn’t equal to optical damage. The underground mechanism was analyzed and attributed to that diffusion dominates the transport process of charge carriers, that is to say photorefraction causes only slight optical damage under diffusion mechanism, which is very important for the practical applications of photorefractive crystals, such as in holographic storage, integrated optics and 3D display.

  18. The simultaneous enhancement of photorefraction and optical damage resistance in MgO and Bi2O3 co-doped LiNbO3 crystals.

    PubMed

    Zheng, Dahuai; Kong, Yongfa; Liu, Shiguo; Chen, Muling; Chen, Shaolin; Zhang, Ling; Rupp, Romano; Xu, Jingjun

    2016-02-03

    For a long time that optical damage was renamed as photorefraction, here we find that the optical damage resistance and photorefraction can be simultaneously enhanced in MgO and Bi2O3 co-doped LiNbO3 (LN:Bi,Mg). The photorefractive response time of LN:Bi,Mg was shortened to 170 ms while the photorefractive sensitivity reached up to 21 cm(2)/J. Meanwhile, LN:Bi,Mg crystals could withstand a light intensity higher than 10(6)  W/cm(2) without apparent optical damage. Our experimental results indicate that photorefraction doesn't equal to optical damage. The underground mechanism was analyzed and attributed to that diffusion dominates the transport process of charge carriers, that is to say photorefraction causes only slight optical damage under diffusion mechanism, which is very important for the practical applications of photorefractive crystals, such as in holographic storage, integrated optics and 3D display.

  19. Synthesis of Pt doped Bi2O3/RuO2 photocatalysts for hydrogen production from water splitting using visible light.

    PubMed

    Hsieh, S H; Lee, G J; Chen, C Y; Chen, J H; Ma, S H; Horng, T L; Chen, K H; Wu, J J

    2012-07-01

    This study was focused on the preparation of modified bismuth oxide photocatalysts, including Ru and Pt doped Bi2O3, using sonochemically assisted method to enhance their photocatalytic activity. The crystalline phase composition and surface structure of Bi2O3 photocatalysts were examined using SEM, XRD, UV-visible spectroscopy, and XPS. Optical characterizations have indicated that the Bi2O3 presents the photoabsorption properties shifting from UV light region into visible light which is approaching towards the edge of 470 nm. According to the experimental results, visible-light-driven photocatalysis for water splitting with the addition of 0.3 M Na2SO3 and 0.03 M H2C2O4 as sacrificing agents demonstrates that Pt/Bi2O3-RuO2 catalyst could increase the amount of hydrogen evolution, which is around 11.6 and 14.5 micromol g(-1) h(-1), respectively. Plausible formation mechanisms of modified bismuth oxide and reaction mechanisms of photocatalytic water splitting have been proposed.

  20. Free energy landscape approach to aid pure phase synthesis of transition metal (X=Cr, Mn and Fe) doped bismuth titanate (Bi2Ti2O7)

    NASA Astrophysics Data System (ADS)

    Mayfield, Cedric L.; Huda, Muhammad N.

    2016-06-01

    A density functional theory study of Cr, Mn and Fe substitutions in Bi2Ti2O7 (BTO) photocatalysts is presented. We performed a stability analysis from our total energy calculations and have determined formations of dopant inspired phases are detrimental to the overall photocatalytic performance of X-doped BTO. From our calculated formation energies and electronic structures it is shown that X substitution of Ti is least stable and should be associated with formation of secondary phases more so than X substitution of Bi. This result contradicts the many experimental studies which suggest transition metal dopants always substitute Ti in BTO, but on the other hand, explains the poor photocatalytic response beyond what has become known as the critical dopant concentration.

  1. Q-switched mode-locked erbium-doped fiber laser based on topological insulator Bi(2)Se(3) deposited fiber taper.

    PubMed

    Gao, Lei; Huang, Wei; Zhang, Jing Dong; Zhu, Tao; Zhang, Han; Zhao, Chu Jun; Zhang, Wei; Zhang, Hua

    2014-08-10

    We have demonstrated the passive Q-switching mode-locking operation in an erbium-doped fiber (EDF) laser by using topological insulator Bi(2)Se(3) deposited on fiber taper, whose damage threshold can be further increased by the large evanescent field interacting length. Due to the low saturation intensity, stable Q-switched mode-locked fiber lasers centered at 1562 nm can be generated at a pump power of 10 mW. The temporal and spectral characteristics for different pump strengths have also been investigated. To the best of our knowledge, it is the first time a Q-switched mode-locked EDF laser based on the fiber taper deposited by Bi(2)Se(3) was generated.

  2. Enhanced thermoelectric figure-of-merit ZT for hole-doped Bi2Sr2Co2Oy through Pb substitution

    NASA Astrophysics Data System (ADS)

    Hsu, H. C.; Lee, W. L.; Wu, K. K.; Kuo, Y. K.; Chen, B. H.; Chou, F. C.

    2012-05-01

    Single crystals of Bi2-xPbxSr2Co2Oy (0 ≤ x ≤ 0.55) have been grown using optical floating-zone method. The chemical compositions were determined using combined electron probe microanalysis and iodometric titration. Physical properties including electrical resistivity (ρ), Seebeck coefficient (S), and thermal conductivity (κ) were measured using single crystal specimens. Successful hole doping through Pb substitution is confirmed through combined iodometry titration, electrical transport, and Seebeck coefficient measurements. Significant reduction on both in-plane resistivity and thermal conductivity was found as a result of Pb substitution to the Bi site. The thermoelectric figure-of-merit ZT for x ˜ 0.55 is raised 20 folds from the undoped sample at room temperature.

  3. Surface photovoltage characterization of sol-gel derived Bi 4Ti 3O 12 ferroelectric thin film on F-doped SnO 2 conducting glass

    NASA Astrophysics Data System (ADS)

    Wang, W. C.; Zheng, H. W.; Liu, X. Y.; Liu, X. S.; Gu, Y. Z.; Zhang, H. R.; Zhang, W. F.

    2010-03-01

    The surface photovoltage response was investigated in partly c-axis oriented Bi 4Ti 3O 12 thin film deposited on fluorine-doped tin oxide conductive glass substrate by a sol-gel technology. The maximum SPV of BiT film reaches 1.8 mV under the dc bias voltage (+1 V) and is three times larger than that under the zero bias. It is also found that the SPV response intensity increases with the increasing positive field, and the intensity of the SPV signal becomes weak with a reverse response when the negative field increases. It is suggested that the SPV is strongly related to the ferroelectric polarization.

  4. Enhancement of photoinduced electrical properties of Al-doped ZnO/BiFeO3 layered thin films prepared by chemical solution deposition

    NASA Astrophysics Data System (ADS)

    Katayama, Takeshi; Sakamoto, Wataru; Yuitoo, Isamu; Takeuchi, Teruaki; Hayashi, Koichiro; Yogo, Toshinobu

    2015-10-01

    Polycrystalline BiFeO3 and Al-doped ZnO/BiFeO3 bilayered thin films were prepared on Pt/TiOx/SiO2/Si substrates by chemical solution deposition. Their photoinduced electrical properties under blue light irradiation were characterized. The rapid on/off response of the photocurrent to light in unpoled BiFeO3 (BFO) and Al-doped ZnO/BiFeO3 (AZO/BFO) thin films was demonstrated. The AZO/BFO layered film exhibited an approximately triple-digit larger photocurrent in comparison with a BFO single-layer film. This is attributable to the photoexcited carrier generation effect at the interface between AZO (n-type) and BFO (p-type) films. Furthermore, in the AZO/BFO layered structure, the direction of the internal bias electric field caused by the space charge distribution in the unpoled BFO film is the same as that of the built-in electric field by forming a p-n junction of AZO and BFO layers. Photovoltaic properties were also improved by fabricating such a layered film. On the other hand, when the placement of BFO to AZO was reversed, the photoelectric current decreased to approximately one-tenth of that of the BFO single-layer film. In the BFO/AZO film, the internal electric field at the p-n junction between BFO and AZO is considered to have an orientation opposite to the self-bias field formed in the BFO film.

  5. Preparation and photocatalytic activity of Sb{sub 2}S{sub 3}/Bi{sub 2}S{sub 3} doped TiO{sub 2} from complex precursor via gel-hydrothermal treatment

    SciTech Connect

    Huang, Yan; Xie, Gang; Chen, Sanping; Gao, Shengli

    2011-03-15

    Sb{sub 2}S{sub 3}/Bi{sub 2}S{sub 3} doped TiO{sub 2} were prepared with the coordination compounds [M(S{sub 2}CNEt){sub 3}] (M=Sb, Bi; S{sub 2}CNEt=pyrrolidinedithiocarbamate) as precursors via gel-hydrothermal techniques. The doped TiO{sub 2} were characterized by XRD, SEM, XPS and UV-vis diffuse reflectance means. The photocatalyst based on doped TiO{sub 2} for photodecolorization of 4-nitrophenol (4-NP) was examined. The optimal Bi{sub 2}S{sub 3}/Sb{sub 2}S{sub 3} content, pH and different doped techniques have been investigated. Photocatalytic tests reveal that M{sub 2}S{sub 3} doped TiO{sub 2} via the gel-hydrothermal route performs better photocatalytic activity for photodegradation reaction of 4-nitrophenol (4-NP). -- Graphical abstract: Sb{sub 2}S{sub 3}/Bi{sub 2}S{sub 3} doped TiO{sub 2} were prepared using [M(S{sub 2}COEt){sub 3}] (M=Sb, Bi; S{sub 2}COEt=pyrrdidine-1-dithiocarbamaate) as precursors via gel-hydrothermal techniques. M{sub 2}S{sub 3} doped TiO{sub 2} performs better photocatalytic activity for photodegradation reaction of 4-nitrophenol. Display Omitted Highlights: {yields} The coordination compounds [M(S{sub 2}CNEt){sub 3}] (M=Sb, Bi; S{sub 2}CNEt=pyrrolidinedithiocarbamate) as precursors to prepare Sb{sub 2}S{sub 3}/Bi{sub 2}S{sub 3} doped TiO{sub 2}. {yields} The sol-hydrothermal, sol-gel and gel-hydrothermal processes for photocatalysis fabrication were employed and compared. {yields} Sb{sub 2}S{sub 3}/Bi{sub 2}S{sub 3} doped TiO{sub 2} obtained via the gel-hydrothermal process showed better performance for photodecolorization test of 4-nitrophenol (4-NP).

  6. Coupling of Low-energy Electrons in the Optimally Doped Bi2Sr2CaCu2O8+δ Superconductor to an Optical Phonon Mode

    SciTech Connect

    Rameau, J.D.; Yang, H.-B.; Gu, G. D.; Johnson, P. D.

    2009-11-24

    Laser-based photoemission with photons of energy 6 eV is used to examine the fine details of the very low-energy electron dispersion and associated dynamics in the nodal region of optimally doped Bi2212. A 'kink' in the dispersion in the immediate vicinity of the Fermi energy is associated with scattering from an optical phonon previously identified in Raman studies. The identification of this phonon as the appropriate mode is confirmed by comparing the scattering rates observed experimentally with the results of calculated scattering rates based on the properties of the phonon mode.

  7. Structural and optical modification in Bi doped As{sub 40}S{sub 60} thin films

    SciTech Connect

    Naik, Ramakanta; Chinnaiyah, S. S.; Ganesan, R.

    2015-06-24

    The influence of substitution of Bi atom instead of S atoms on the structural and optical properties of thin films of As{sub 40}S{sub 60} are reported. The density is found to be increased with the addition Bi heavy metal into As{sub 2}S{sub 3}. The amorphous to polycrystalline structure of the bulk sample is observed for Bi more than 7%. The glass transition temperature is found to be decreased with addition of Bi. The absorption edge shifts to shorter wavelength, thereby decreasing optical band gap of Bi{sub x}As{sub 40}S{sub 60-x} (x=0,2 and 4% here) film. The optical parameter change is discussed from the stand point of chemical bonds formed in the films and related to the defect states produced due to incorporation of Bi atoms in place of chalcogenide S atoms.

  8. Effect of Nb and more Fe ions co-doping on the microstructures, magnetic, and piezoelectric properties of Aurivillius Bi5Ti3FeO15 phases

    NASA Astrophysics Data System (ADS)

    Chen, Chao; Song, Kun; Bai, Wei; Yang, Jing; Zhang, Yuanyuan; Xiang, Pinghua; Qin, Muyang; Tang, Xiaodong; Chu, Junhao

    2016-12-01

    Aurivillius Bi5Ti3-2xFe1+xNbxO15 (BTFNO, x = 0.1, 0.2, 0.3, and 0.4) phases were prepared by solid state reaction method. The structures and dielectric responses were studied, and especially the effects of Nb with a higher valence and more Fe co-doping on the magnetic and piezoelectric properties were addressed in detail. The BTFNO samples were well crystallized with no detectable impurities, and plate-like microstructures with various sizes demonstrate the typical characteristics of bismuth-layer Aurivillius materials. It is found that a dielectric loss peak appears in the Nb and Fe co-doped Bi5Ti3FeO15 (BTFO) ceramics, and it has a shift towards a lower frequency with increasing the Nb doping contents. Furthermore, antiferromagnetic long-range magnetic order is improved with the introduction of Nb and more Fe co-doping. And compared with that of the parent BTFO forms, a clear discrepancy, which is indicative of a super-paramagnetic behavior, of the magnetization vs. temperature curves in zero-field cooling and field cooling cases is observed by the introduction of the Nb and more Fe ions. More interestingly, the introduction of Nb and more Fe ions can suppress the preferred c-axis growth while promoting the a-/b-axis growth of the plate-like grains, and thus favors the piezoelectric behaviors of the BTFO Aurivillius phases along the growth orientation.

  9. Investigating the effect of Cd-Mn co-doped nano-sized BiFeO3 on its physical properties

    NASA Astrophysics Data System (ADS)

    Ishaq, B.; Murtaza, G.; Sharif, S.; Azhar Khan, M.; Akhtar, Naeem; Will, I. G.; Saleem, Murtaza; Ramay, Shahid M.

    This work deals with the investigation of different effects on the structural, magnetic, electronic and dielectric properties of Cd and Mn doped Bi0.75Cd0.25Fe1-xMnxO3 multiferroic samples by taking fixed ratios of Cd and varying the Mn ratio with values of x = 0.0, 0.5, 0.10 and 0.15. Cd-Mn doped samples were synthesized chemically using a microemulsion method. All the samples were finally sintered at 700 °C for 2 h to obtain the single phase perovskites structure of BiFeO3 materials. The synthesized samples were characterized by different techniques, such as X-ray diffractometry (XRD), Scanning Electron Microscopy (SEM), Fourier transform infrared spectroscopy (FTIR), LCR meter and magnetic properties using VSM. XRD results confirm BFO is a perovskite structure having crystallite size in the range of 24-54 nm. XRD results also reveal observed structural distortion due to doping of Cd at the A-site and Mn at the B-site of BFO. SEM results depict that, as the substitution of Cd-Mn increases in BFO, grain size decreases up to 30 nm. FTIR spectra showed prominent absorption bands at 555 cm-1 and 445 cm-1 corresponding to the stretching vibrations of the metal ions complexes at site A and site B, respectively. Variation of dielectric constant (ɛ‧) and loss tangent (tan δ) at room temperature in the range of 1 MHz to 3 GHz have been investigated. Results reveal that with Cd-Mn co doping a slight decrease in dielectric constant have been observed. Magnetic properties of Cd-Mn doped pure BFO samples have been studied at 300 K. Results reveal that undoped BiFeO3 exhibits weak ferromagnetic ordering due to the canting of its spin. Increase in magnetization and decrease in coercivity is a clear indication that a material can be used in high density recording media and memory devices.

  10. Electrical resistivity, magnetoresistance, magnetisation, hall coefficient and excess conductivity in Pb-doped Bi-Sr-Ca-Cu oxides

    NASA Astrophysics Data System (ADS)

    Poddar, A.; Mandal, P.; Das, A. N.; Ghosh, B.; Choudhury, P.

    1989-12-01

    The electrical resistance, Meissner signal, magnetoresistance and Hall coefficient of Bi 1.75Pb 0.25Sr 2Ca 2Cu 3O x and Bi 1.5Pb 0.5Sr 2Ca 2Cu 3O x (nominal compositions) have been measured. Resistance of the Bi 1.75Pb 0.25 sample becomes zero for T≤106 K while the Bi 1.5Pb 0.5 sample shows a 65% drop in the resistance around 106 K and TR = 0 c ≈ 73 K. Powder X-ray diffraction analysis reveals that the major phase in the Bi 1.75Pb 0.25 sample is the high-T c phase and in the Bi 1.5 Pb 0.5 sample the low-T c phase. The Hall coefficients (R H) of both samples are positive with R-1H> linear in temperature. The temperature dependence of R H is stronger in the Bi 1.75Pb 0.25 sample than in the Bi 1.5Pb 0.5 sample. The carrier concentration determined R-1H for the Bi 1.75Pb 0.25 and the Bi 1.5Pb 0.5 samples at 300 K are 1.59 × 10 21 cm -3 and 3.66 × 10 21 cm -3, respectively. The excess conductivity of both samples is analyzed using the Aslamazov-Larkin expression. The critical exponent λ obtained for the Bi 1.75Pb 0.25 sample is 0.78 and that for the Bi 1.5Pb 0.5 sample, in the temperature region where the high- Tc phase contributes only, is 0.77.

  11. Improved electron transfer and plasmonic effect in dye-sensitized solar cells with bi-functional Nb-doped TiO2/Ag ternary nanostructures.

    PubMed

    Park, Jung Tae; Chi, Won Seok; Jeon, Harim; Kim, Jong Hak

    2014-03-07

    TiO2 nanoparticles are surface-modified via atom transfer radical polymerization (ATRP) with a hydrophilic poly(oxyethylene)methacrylate (POEM), which can coordinate to the Ag precursor, i.e. silver trifluoromethanesulfonate (AgCF3SO3). Following the reduction of Ag ions, a Nb2O5 doping process and calcination at 450 °C, bi-functional Nb-doped TiO2/Ag ternary nanostructures are generated. The resulting nanostructures are characterized by energy-filtering transmission electron microscopy (EF-TEM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and UV-visible spectroscopy. The dye-sensitized solar cell (DSSC) based on the Nb-doped TiO2/Ag nanostructure photoanode with a polymerized ionic liquid (PIL) as the solid polymer electrolyte shows an overall energy conversion efficiency (η) of 6.9%, which is much higher than those of neat TiO2 (4.7%) and Nb-doped TiO2 (5.4%). The enhancement of η is mostly due to the increase of current density, attributed to the improved electron transfer properties including electron injection, collection, and plasmonic effects without the negative effects of charge recombination or problems with corrosion. These properties are supported by intensity modulated photocurrent/voltage spectroscopy (IMPS/IMVS) and incident photon-to-electron conversion efficiency (IPCE) measurements.

  12. γ irradiation induced effects on bismuth active centres and related photoluminescence properties of Bi/Er co-doped optical fibres

    NASA Astrophysics Data System (ADS)

    Sporea, D.; Mihai, L.; Neguţ, D.; Luo, Yanhua; Yan, Binbin; Ding, Mingjie; Wei, Shuen; Peng, Gang-Ding

    2016-07-01

    We investigate the effects of γ irradiation on bismuth active centres (BACs) and related photoluminescence properties of bismuth/erbium co-doped silica fibre (BEDF), [Si] ~28, [Ge] ~1.60, [Al] ~0.10, [Er] ~ <0.10 and [Bi] ~0.10 atom%, fabricated by in-situ solution doping and Modified Chemical Vapor Deposition (MCVD). The samples were irradiated at 1 kGy, 5 kGy, 15 kGy, 30 kGy and 50 kGy doses, and dose rate of 5.5 kGy/h, at room temperature. The optical properties of BEDF samples are tested before and after γ irradiation. We found that high dose γ irradiation could significantly influence the formation and composition of BACs and their photoluminescence performance, as important changes in absorption and emission properties associated with the 830 nm pump produces the direct evidence of γ irradiation effects on BAC-Si. We notice that the saturable to unsaturable absorption ratio at pump wavelength could be increased with high dose γ irradiation, indicating that emission and pump efficiency could be increased by γ irradiation. Our experimental results also reveal good radiation survivability of the BEDF under low and moderate γ irradiation. Our investigation suggests the existence of irradiation related processing available for tailoring the photoluminescence properties and performance of bismuth doped/co-doped fibres.

  13. γ irradiation induced effects on bismuth active centres and related photoluminescence properties of Bi/Er co-doped optical fibres

    PubMed Central

    Sporea, D.; Mihai, L.; Neguţ, D.; Luo, Yanhua; Yan, Binbin; Ding, Mingjie; Wei, Shuen; Peng, Gang-Ding

    2016-01-01

    We investigate the effects of γ irradiation on bismuth active centres (BACs) and related photoluminescence properties of bismuth/erbium co-doped silica fibre (BEDF), [Si] ~28, [Ge] ~1.60, [Al] ~0.10, [Er] ~ <0.10 and [Bi] ~0.10 atom%, fabricated by in-situ solution doping and Modified Chemical Vapor Deposition (MCVD). The samples were irradiated at 1 kGy, 5 kGy, 15 kGy, 30 kGy and 50 kGy doses, and dose rate of 5.5 kGy/h, at room temperature. The optical properties of BEDF samples are tested before and after γ irradiation. We found that high dose γ irradiation could significantly influence the formation and composition of BACs and their photoluminescence performance, as important changes in absorption and emission properties associated with the 830 nm pump produces the direct evidence of γ irradiation effects on BAC-Si. We notice that the saturable to unsaturable absorption ratio at pump wavelength could be increased with high dose γ irradiation, indicating that emission and pump efficiency could be increased by γ irradiation. Our experimental results also reveal good radiation survivability of the BEDF under low and moderate γ irradiation. Our investigation suggests the existence of irradiation related processing available for tailoring the photoluminescence properties and performance of bismuth doped/co-doped fibres. PMID:27440386

  14. Effects of K doping on structural and superconducting properties of Bi{sub 1.5}Pb{sub 0.5}Sr{sub 1.8}CaCu{sub 2}O{sub 8+δ} compounds

    SciTech Connect

    Belala, K; Mosbah, M. F.

    2013-12-16

    Two kinds of potassium doped Bi(Pb)2212 samples are used to investigate the effect of doping the Bi(Pb)2212 ((Bi,Pb){sub 2}Sr{sub 2}CaCu{sub 2}O{sub 8}) phase by potassium (K): In the first one K is substituted on the Sr site; In the second one K is added. Using the solid state method reaction samples of Bi{sub 1.5}Pb{sub 0.5}(Sr{sub 1.8−x}K{sub x})CaCu{sub 2}O{sub 8+d} and Bi{sub 1.5}Pb{sub 0.5}Sr{sub 1.8}CaCu{sub 2}O{sub 8+d}K{sub x} (0 ≤ x≤ 0.05) have been prepared from powders of carbonates and primary oxides having purity over 99%. The samples have been characterized by X ray diffraction (XRD), scanning electron microscopy (SEM) and resistivity versus temperature measurements. Results show how the kind and the rate of doping by potassium affects the structural and transport properties of Bi(Pb)2212 phase.

  15. Co-doping of (Bi(0.5)Na(0.5))TiO(3): secondary phase formation and lattice site preference of Co.

    PubMed

    Schmitt, V; Staab, T E M

    2012-11-14

    Bismuth sodium titanate (Bi(0.5)Na(0.5))TiO(3) (BNT) is considered to be one of the most promising lead-free alternatives to piezoelectric lead zirconate titanate (PZT). However, the effect of dopants on the material has so far received little attention from an atomic point of view. In this study we investigated the effects of cobalt-doping on the formation of additional phases and determined the preferred lattice site of cobalt in BNT. The latter was achieved by comparing the measured x-ray absorption near-edge structure (XANES) spectra to numerically calculated spectra of cobalt on various lattice sites in BNT. (Bi(0.5)Na(0.5))TiO(3) + x mol% Co (x = 0.0, 0.5, 1.0, 2.6) was synthesized via solid state reaction. As revealed by SEM backscattering images, a secondary phase formed in all doped specimens. Using both XRD and SEM-EDX, it was identified as Co(2)TiO(4) for dopant levels >0.5 mol%. In addition, a certain amount of cobalt was incorporated into BNT, as shown by electron probe microanalysis. This amount increased with increasing dopant levels, suggesting that an equilibrium forms together with the secondary phase. The XANES experiments revealed that cobalt occupies the octahedral B-site in the BNT perovskite lattice, substituting Ti and promoting the formation of oxygen vacancies in the material.

  16. Optical characterization of Tm3+ doped Bi2O3-GeO2-Ga2O3 glasses in absence and presence of BaF2

    NASA Astrophysics Data System (ADS)

    Han, Kexuan; Zhang, Peng; Wang, Shunbin; Guo, Yanyan; Zhou, Dechun; Yu, Fengxia

    2016-08-01

    In this paper, Two new Bi2O3-GeO2-Ga2O3 glasses (one presence of BaF2) doped with 1mol% Tm2O3 were prepared by melt-quenching technique. Differential thermal analysis (DTA), the absorption, Raman, IR spectra and fluorescence spectra were measured. The Judd–Ofelt intensity parameters, emission cross section, absorption cross section, and gain coefficient of Tm3+ ions were comparatively investigated. After the BaF2 introduced, the glass showed a better thermal stability, lower phonon energy and weaker OH‑ absorption coefficient, meanwhile, a larger ~1.8 μm emission cross section σem (7.56 × 10‑21 cm2) and a longer fluorescence lifetime τmea (2.25 ms) corresponding to the Tm3+: 4F3 → 3H6 transition were obtained, which is due to the addition of fluoride in glass could reduce the quenching rate of hydroxyls and raise the cross-relaxation (3H6 + 3H4 → 3F4 + 3F4) rate. Our results suggest that the Tm3+ doped Bi2O3-GeO2-Ga2O3 glass with BaF2 might be potential to the application in efficient ~1.8 μm lasers system.

  17. Investigation of crystal structure, dielectric and magnetic properties in La and Nd co-doped BiFeO3 multiferroics

    NASA Astrophysics Data System (ADS)

    Singh, Ompal; Agarwal, Ashish; Sanghi, Sujata; Das, Amitabh; Anju

    2017-03-01

    For the investigation of the crystal structure, dielectric properties and magnetic properties of La and Nd co-doped BiFeO3 multiferroics; Bi0.8La0.2-xNdxFeO3 (x=0.075, 0.1, 0.125) samples were prepared through solid state reaction method. Rietveld refinement of the obtained XRD patterns shows that there is change in crystal structure in these samples. At higher concentration of La (at x=0.075), the crystal structure was found to have mixed symmetry with rhombohedral and triclinic phases, while with equal concentration of both the dopants (at x=0.1), the structure changes to mixed symmetry having rhombohedral and orthorhombic phases. At higher concentration of Nd (at x=0.125), again mixed symmetry was established having both phases of the previous composition but approximately in reverse fraction. In dielectric analysis, x=0.1 sample showed the highest values of dielectric constant (ε‧) and dielectric loss (tan δ). For x=0.125 sample, it was observed that the dielectric constant and dielectric loss response are improved. The magnetic characterization (M-H loops) indicates the significant enhancement in magnetisation with increasing concentration of Nd. Nd doping leads to the destruction of spiral modulation, forming the antiferromagnets, and visualisation of improved magnetisation via canting of spins.

  18. Influence of Doping and Nanostructuration on n-Type Bi2(Te0.8Se0.2)3 Alloys Synthesized by Arc Melting.

    PubMed

    Gharsallah, Mouna; Serrano-Sanchez, Federico; Nemes, Norbert M; Martinez, Jose Luis; Alonso, Jose Antonio

    2017-12-01

    In competitive thermoelectric devices for energy conversion and generation, high-efficiency materials of both n-type and p-type are required. For this, Bi2Te3-based alloys have the best thermoelectric properties in room temperature applications. Partial replacement of tellurium by selenium is expected to introduce new donor states in the band gap, which would alter electrical conductivity and thermopower. We report on the preparation of n-type Bi2(Te1-xSex)3 solid solutions by a straightforward arc-melting technique, yielding nanostructured polycrystalline pellets. X-ray and neutron powder diffraction was used to assess Se inclusion, also indicating that the interactions between quintuple layers constituting this material are weakened upon Se doping, while the covalency of intralayer bonds is augmented. Moreover, scanning electron microscopy shows large surfaces perpendicular to the c crystallographic axis assembled as stacked sheets. Grain boundaries related to this 2D nanostructuration affect the thermal conductivity reducing it below 0.8 Wm(-1)K(-1) at room temperature. Furthermore, Se doping increases the absolute Seebeck coefficient up to -140 μV K(-1) at 400 K, which is also beneficial for improved thermoelectric efficiency.

  19. Enhanced photoluminescence and structure of Dy3+-doped SrBi2Ta2O9-containing transparent glass-ceramics

    NASA Astrophysics Data System (ADS)

    Tarafder, Anal; Molla, Atiar Rahaman; Karmakar, Basudeb

    2013-06-01

    Trivalent dysprosium (Dy3+)-doped precursor glass in the K2O-SiO2-SrO-Bi2O3-Ta2O5 (KSSBT) system have been prepared by melt-quench technique and strontium bismuth tantalate, SrBi2Ta2O9 (SBT) glass-ceramics has been synthesized by a controlled crystallization process of the precursor glass. With progression of heat-treatment it is observed that Dy3+:glass exhibit a blue emission at 486 nm (4F9/2 → 6H15/2) and also a bright fluorescent yellow emission at 576 nm (4F9/2 → 6H13/2) have been observed with λex = 455 nm (6H15/2 → 4I15/2). These spectra reveal that the Dy3+ ions are gradually entering into the SBT nanocrystals of the glass-ceramics. The photoluminescence characteristics originating from Dy3+-doping in nanocrystalline SBT reveals the dependence of the luminescent intensity on heat-treatment time. Their structural properties have also been evaluated by FTIR spectroscopic and microstructural studies. Such luminescent glass-ceramics are expected to find potential applications such as solid-state yellow lasers and optical display systems.

  20. Optical characterization of Tm(3+) doped Bi2O3-GeO2-Ga2O3 glasses in absence and presence of BaF2.

    PubMed

    Han, Kexuan; Zhang, Peng; Wang, Shunbin; Guo, Yanyan; Zhou, Dechun; Yu, Fengxia

    2016-08-10

    In this paper, Two new Bi2O3-GeO2-Ga2O3 glasses (one presence of BaF2) doped with 1mol% Tm2O3 were prepared by melt-quenching technique. Differential thermal analysis (DTA), the absorption, Raman, IR spectra and fluorescence spectra were measured. The Judd-Ofelt intensity parameters, emission cross section, absorption cross section, and gain coefficient of Tm(3+) ions were comparatively investigated. After the BaF2 introduced, the glass showed a better thermal stability, lower phonon energy and weaker OH(-) absorption coefficient, meanwhile, a larger ~1.8 μm emission cross section σem (7.56 × 10(-21) cm(2)) and a longer fluorescence lifetime τmea (2.25 ms) corresponding to the Tm(3+): (4)F3 → (3)H6 transition were obtained, which is due to the addition of fluoride in glass could reduce the quenching rate of hydroxyls and raise the cross-relaxation ((3)H6 + (3)H4 → (3)F4 + (3)F4) rate. Our results suggest that the Tm(3+) doped Bi2O3-GeO2-Ga2O3 glass with BaF2 might be potential to the application in efficient ~1.8 μm lasers system.

  1. Influence of Doping and Nanostructuration on n-Type Bi2(Te0.8Se0.2)3 Alloys Synthesized by Arc Melting

    NASA Astrophysics Data System (ADS)

    Gharsallah, Mouna; Serrano-Sanchez, Federico; Nemes, Norbert M.; Martinez, Jose Luis; Alonso, Jose Antonio

    2017-01-01

    In competitive thermoelectric devices for energy conversion and generation, high-efficiency materials of both n-type and p-type are required. For this, Bi2Te3-based alloys have the best thermoelectric properties in room temperature applications. Partial replacement of tellurium by selenium is expected to introduce new donor states in the band gap, which would alter electrical conductivity and thermopower. We report on the preparation of n-type Bi2(Te1-xSex)3 solid solutions by a straightforward arc-melting technique, yielding nanostructured polycrystalline pellets. X-ray and neutron powder diffraction was used to assess Se inclusion, also indicating that the interactions between quintuple layers constituting this material are weakened upon Se doping, while the covalency of intralayer bonds is augmented. Moreover, scanning electron microscopy shows large surfaces perpendicular to the c crystallographic axis assembled as stacked sheets. Grain boundaries related to this 2D nanostructuration affect the thermal conductivity reducing it below 0.8 Wm-1K-1 at room temperature. Furthermore, Se doping increases the absolute Seebeck coefficient up to -140 μV K-1 at 400 K, which is also beneficial for improved thermoelectric efficiency.

  2. Optical characterization of Tm3+ doped Bi2O3-GeO2-Ga2O3 glasses in absence and presence of BaF2

    PubMed Central

    Han, Kexuan; Zhang, Peng; Wang, Shunbin; Guo, Yanyan; Zhou, Dechun; Yu, Fengxia

    2016-01-01

    In this paper, Two new Bi2O3-GeO2-Ga2O3 glasses (one presence of BaF2) doped with 1mol% Tm2O3 were prepared by melt-quenching technique. Differential thermal analysis (DTA), the absorption, Raman, IR spectra and fluorescence spectra were measured. The Judd–Ofelt intensity parameters, emission cross section, absorption cross section, and gain coefficient of Tm3+ ions were comparatively investigated. After the BaF2 introduced, the glass showed a better thermal stability, lower phonon energy and weaker OH− absorption coefficient, meanwhile, a larger ~1.8 μm emission cross section σem (7.56 × 10−21 cm2) and a longer fluorescence lifetime τmea (2.25 ms) corresponding to the Tm3+: 4F3 → 3H6 transition were obtained, which is due to the addition of fluoride in glass could reduce the quenching rate of hydroxyls and raise the cross-relaxation (3H6 + 3H4 → 3F4 + 3F4) rate. Our results suggest that the Tm3+ doped Bi2O3-GeO2-Ga2O3 glass with BaF2 might be potential to the application in efficient ~1.8 μm lasers system. PMID:27506152

  3. Thermoelectric properties of Cu-doped n-type (Bi{sub 2}Te{sub 3}){sub 0.9}-(Bi{sub 2-x}Cu{sub x}Se{sub 3}){sub 0.1}(x=0-0.2) alloys

    SciTech Connect

    Cui, J.L. Mao, L.D.; Yang, W.; Xu, X.B.; Chen, D.Y.; Xiu, W.J.

    2007-12-15

    n-Type (Bi{sub 2}Te{sub 3}){sub 0.9}-(Bi{sub 2-x}Cu{sub x}Se{sub 3}){sub 0.1} (x=0-0.2) alloys with Cu substitution for Bi were prepared by spark plasma-sintering technique and their structural and thermoelectric properties were evaluated. Rietveld analysis reveals that approximate 9.0% of Bi atomic sites are occupied by Cu atoms and less than 4.0 wt% second phase Cu{sub 2.86}Te{sub 2} precipitated in the Cu-doped parent alloys. Measurements show that an introduction of a small amount of Cu (x{<=}0.1) can reduce the lattice thermal conductivity ({kappa}{sub L}), and improve the electrical conductivity and Seebeck coefficient. An optimal dimensionless figure of merit (ZT) value of 0.98 is obtained for x=0.1 at 417 K, which is obviously higher than those of Cu-free Bi{sub 2}Se{sub 0.3}Te{sub 2.7} (ZT=0.66) and Ag-doped alloys (ZT=0.86) prepared by the same technologies. - Graphical abstract: After Cu-doping with x=0.1, the highest ZT value of 0.98 is obtained at 417 K, which is about 0.32 and 0.12 higher than those of Cu-free Bi{sub 2}Se{sub 0.3}Te{sub 2.7} and the Ag-doped alloys (Bi{sub 2}Te{sub 3}){sub 0.9}-(Bi{sub 2-x}Ag{sub x}Se{sub 3}){sub 0.1} (x=0.4), respectively.

  4. One-pot hydrothermal synthesis of CuBi co-doped mesoporous zeolite Beta for the removal of NOx by selective catalytic reduction with ammonia

    NASA Astrophysics Data System (ADS)

    Xie, Zhiguo; Zhou, Xiaoxia; Wu, Huixia; Chen, Lisong; Zhao, Han; Liu, Yan; Pan, Linyu; Chen, Hangrong

    2016-07-01

    A series of CuBi co-doped mesoporous zeolite Beta (CuxBiy-mBeta) were prepared by a facile one-pot hydrothermal treatment approach and were characterized by XRD, N2 adsorption-desorption, TEM/SEM, XPS, H2-TPR, NH3-TPD and in situ DRIFTS. The catalysts CuxBiy-mBeta were applied to the removal of NOx by selective catalytic reduction with ammonia (NH3-SCR), especially the optimized Cu1Bi1-mBeta achieved the high efficiency for the removal of NOx and N2 selectivity, superior water and sulfur resistance as well as good durability. The excellent catalytic performance could be attributed to the acid sites of the support and the synergistic effect between copper and bismuth species. Moreover, in situ DRIFTS results showed that amides NH2 and NH4+ generated from NH3 adsorption could be responsible for the high selective catalytic reduction of NOx to N2. In addition, a possible catalytic reaction mechanism on Cu1Bi1-mBeta for the removal of NOx by NH3-SCR was proposed for explaining this catalytic process.

  5. One-pot hydrothermal synthesis of CuBi co-doped mesoporous zeolite Beta for the removal of NOx by selective catalytic reduction with ammonia

    PubMed Central

    Xie, Zhiguo; Zhou, Xiaoxia; Wu, Huixia; Chen, Lisong; Zhao, Han; Liu, Yan; Pan, Linyu; Chen, Hangrong

    2016-01-01

    A series of CuBi co-doped mesoporous zeolite Beta (CuxBiy-mBeta) were prepared by a facile one-pot hydrothermal treatment approach and were characterized by XRD, N2 adsorption-desorption, TEM/SEM, XPS, H2-TPR, NH3-TPD and in situ DRIFTS. The catalysts CuxBiy-mBeta were applied to the removal of NOx by selective catalytic reduction with ammonia (NH3-SCR), especially the optimized Cu1Bi1-mBeta achieved the high efficiency for the removal of NOx and N2 selectivity, superior water and sulfur resistance as well as good durability. The excellent catalytic performance could be attributed to the acid sites of the support and the synergistic effect between copper and bismuth species. Moreover, in situ DRIFTS results showed that amides NH2 and NH4+ generated from NH3 adsorption could be responsible for the high selective catalytic reduction of NOx to N2. In addition, a possible catalytic reaction mechanism on Cu1Bi1-mBeta for the removal of NOx by NH3-SCR was proposed for explaining this catalytic process. PMID:27445009

  6. EPR, optical absorption and photoluminescence properties of MnO 2 doped 23B 2O 3-5ZnO-72Bi 2O 3 glasses

    NASA Astrophysics Data System (ADS)

    Prakash Singh, Shiv; Chakradhar, R. P. S.; Rao, J. L.; Karmakar, Basudeb

    2010-05-01

    Electron paramagnetic resonance (EPR), transmission electron microscopy (TEM), optical absorption and photoluminescence (PL) spectroscopic measurements are performed on Mn 2+ doped high bismuth containing zinc-bismuth-borate glasses. TEM images reveal homogeneously dispersed Bi o nanoparticles (NPs) of spherical shape with size about 5 nm. EPR spectra exhibit predominant signals at g≈2.0 and 4.3 with a sextet hyperfine structure. The resonance signal at g≈2.0 is due to Mn 2+ ions in an environment close to octahedral symmetry, where as the resonance at g≈4.3 is attributed to the rhombic surrounding of the Mn 2+ ions. The hyperfine splitting constant ( A) indicates that Mn 2+ ions in these glasses are moderately covalent in nature. The zero-field splitting parameter D has been calculated from the allowed hyperfine lines. The optical absorption spectrum exhibits a single broad band centered at 518 nm (19,305 cm -1) is assigned to the 6A 1g(S)→ 4T 1g(G) transition of Mn 2+ ions. The visible and near infrared (NIR) luminescence bands at 548, 652 and 804 nm have been observed when excited at 400 and 530 nm, respectively. These luminescence centers are supposed to be caused by the lower valence state of bismuth, such as Bi 2+ and Bi + ions, generated during melting process.

  7. Effects of tantalum doping on microstructure and ferroelectric properties of Bi 4Ti 3O 12 thin films prepared by a sol-gel method

    NASA Astrophysics Data System (ADS)

    Kao, M. C.; Chen, H. Z.; Young, S. L.; Chuang, B. N.; Jiang, W. W.; Song, J. S.; Jhan, S. S.; Chiang, J. L.; Wu, L. T.

    2012-01-01

    Tantalum-substituted Bi 4Ti 3O 12 (Bi 4Ti 3- x/5 Ta x/5 O 12, BTTO) thin films were fabricated on Pt(111)/Ti/SiO 2/Si(100) substrates by sol-gel technology. The effects of various processing parameters, including Ta content ( x=0˜0.08) and annealing temperature (500˜800 °C), on the growth and properties of thin films were investigated. X-ray diffraction analysis shows that the BTTO thin films have a bismuth-layered perovskite structure with preferred (117) orientation. With the increase of Ta content, the grain size of film decreased slightly, and highly (117)-oriented BTTO films were obtained in the composition of x=0.06. Ta doping on the B-site of Bi 4Ti 3O 12 could induce the distortion of oxygen octahedral and decrease the oxygen vacancy concentration by a compensating effect. The highly (117)-oriented BTTO thin films with x=0.06 exhibits the maximum remanent polarization (2 Pr) of 50 μC/cm 2 and a low coercive field (2 Ec) of 104 kV/cm, fatigue free characteristics up to ≧ 10 8 switching cycles.

  8. Effects of Ag{sub 2}O doping on the electromagnetic properties of a BiPbSrCaCuO superconductor

    SciTech Connect

    Lee, Sang Heon; Kim, H. C.

    2001-06-01

    Electromagnetic properties of an Ag{sub 2}O doped and an undoped BiPbSrCaCuO superconductor were evaluated to investigate the effect of the pinning center on the magnetic shielding and suspension/levitation phenomena. The residual magnetization M=M{sup +}{endash}M{sup {minus}} increased with the dopant concentration, a maximum for 2% doping, wherein a fine uniform dispersion of Ag particles was observed. The fine Ag particles form a cluster with increasing dopant as the particles condense with each other and grow, consequently does the number of flux passing through decreases, so the magnetization M decreases. This result indicates that M is proportional to the number of magnetic flux lines passing through the sample, because the smaller the particle size the larger the ratio of the surface area to the volume. Magnetic shielding was evaluated by measuring the induced voltage in the secondary coil by placing the sample in between the primary coil. The voltage was initially set to 0.5 V, and decreased to 0.17 and 0.28 V, respectively, for the undoped and 2% Ag{sub 2}O doped samples. The much less change in the induced voltage for the 2% doped sample is attributed to increased flux shielding by shielding the vortex current. Simultaneous stable levitation and suspension of 2% Ag{sub 2}O doped disk samples weighing 0.3 g were observed, respectively, above (3 mm) and beneath (2 mm) a toroidal permanent magnet under a field cooled condition. The role of flux pinning is discussed to account for the phenomena by considering the hysteretic force function. {copyright} 2001 American Institute of Physics.

  9. High Light Absorption and Charge Separation Efficiency at Low Applied Voltage from Sb-Doped SnO2/BiVO4 Core/Shell Nanorod-Array Photoanodes.

    PubMed

    Zhou, Lite; Zhao, Chenqi; Giri, Binod; Allen, Patrick; Xu, Xiaowei; Joshi, Hrushikesh; Fan, Yangyang; Titova, Lyubov V; Rao, Pratap M

    2016-06-08

    BiVO4 has become the top-performing semiconductor among photoanodes for photoelectrochemical water oxidation. However, BiVO4 photoanodes are still limited to a fraction of the theoretically possible photocurrent at low applied voltages because of modest charge transport properties and a trade-off between light absorption and charge separation efficiencies. Here, we investigate photoanodes composed of thin layers of BiVO4 coated onto Sb-doped SnO2 (Sb:SnO2) nanorod-arrays (Sb:SnO2/BiVO4 NRAs) and demonstrate a high value for the product of light absorption and charge separation efficiencies (ηabs × ηsep) of ∼51% at an applied voltage of 0.6 V versus the reversible hydrogen electrode, as determined by integration of the quantum efficiency over the standard AM 1.5G spectrum. To the best of our knowledge, this is one of the highest ηabs × ηsep efficiencies achieved to date at this voltage for nanowire-core/BiVO4-shell photoanodes. Moreover, although WO3 has recently been extensively studied as a core nanowire material for core/shell BiVO4 photoanodes, the Sb:SnO2/BiVO4 NRAs generate larger photocurrents, especially at low applied voltages. In addition, we present control experiments on planar Sb:SnO2/BiVO4 and WO3/BiVO4 heterojunctions, which indicate that Sb:SnO2 is more favorable as a core material. These results indicate that integration of Sb:SnO2 nanorod cores with other successful strategies such as doping and coating with oxygen evolution catalysts can move the performance of BiVO4 and related semiconductors closer to their theoretical potential.

  10. Undoped and Ni-doped CoOx surface modification of porous BiVO4 photoelectrodes for water oxidation

    SciTech Connect

    Liu, Ya; Guo, Youhong; Schelhas, Laura T.; Li, Mingtao; Ager, Joel W.

    2016-09-29

    Surface modification of photoanodes with oxygen evolution reaction (OER) catalysts is an effective approach to enhance water oxidation kinetics, to reduce external bias, and to improve the energy harvesting efficiency of photoelectrochemical (PEC) water oxidation. Here, the surface of porous BiVO4 photoanodes was modified by the deposition of undoped and Ni-doped CoOx via nitrogen flow assisted electrostatic spray pyrolysis. This newly developed atmospheric pressure deposition technique allows for surface coverage throughout the porous structure with thickness and composition control. PEC testing of modified BiVO4 photoanodes shows that after deposition of an undoped CoOx surface layer, the onset potential shifts negatively by ca. 420 mV and the photocurrent density reaches 2.01 mA cm–2 at 1.23 vs VRHE under AM 1.5G illumination. Modification with Ni-doped CoOx produces even more effective OER catalysis and yields a photocurrent density of 2.62 mA cm–2 at 1.23 VRHE under AM 1.5G illumination. Furthermore, the valence band X-ray photoelectron spectroscopy and synchrotron-based X-ray absorption spectroscopy results show the Ni doping reduces the Fermi level of the CoOx layer; the increased surface band bending produced by this effect is partially responsible for the superior PEC performance.

  11. X-ray magnetic spectroscopy of MBE-grown Mn-doped Bi{sub 2}Se{sub 3} thin films

    SciTech Connect

    Collins-McIntyre, L. J.; Watson, M. D.; Zhang, S. L.; Coldea, A. I.; Hesjedal, T.; Baker, A. A.; Harrison, S. E.; Pushp, A.; Kellock, A. J.; Parkin, S. S. P.; Laan, G. van der

    2014-12-15

    We report the growth of Mn-doped Bi{sub 2}Se{sub 3} thin films by molecular beam epitaxy (MBE), investigated by x-ray diffraction (XRD), atomic force microscopy (AFM), SQUID magnetometry and x-ray magnetic circular dichroism (XMCD). Epitaxial films were deposited on c-plane sapphire substrates by co-evaporation. The films exhibit a spiral growth mechanism typical of this material class, as revealed by AFM. The XRD measurements demonstrate a good crystalline structure which is retained upon doping up to ∼7.5 atomic-% Mn, determined by Rutherford backscattering spectrometry (RBS), and show no evidence of the formation of parasitic phases. However an increasing interstitial incorporation of Mn is observed with increasing doping concentration. A magnetic moment of 5.1 μ{sub B}/Mn is obtained from bulk-sensitive SQUID measurements, and a much lower moment of 1.6 μ{sub B}/Mn from surface-sensitive XMCD. At ∼2.5 K, XMCD at the Mn L{sub 2,3} edge, reveals short-range magnetic order in the films and indicates ferromagnetic order below 1.5 K.

  12. Ferroelectric Properties of BaZrO3 Doped Sr0.8Bi2.2Ta2O9 Thin Films

    NASA Astrophysics Data System (ADS)

    Bozgeyik, Mehmet S.; Cross, Jeffrey S.; Ishiwara, Hiroshi; Shinozaki, Kazuo

    2009-06-01

    Novel sol-gel derived Sr0.8Bi2.2Ta2O9 (SBT) doped with 5 and 7% molar ratio BaZrO3 (BZ) thin films were fabricated, characterized, and electrical properties were evaluated with Pt electrodes. X-ray diffraction (XRD) analysis showed all the characteristic peaks of the layered perovskite structure with (115) orientation and slight peak broadening by BZ doping. X-ray photoelectron spectra (XPS) showed a small shift in the Sr 3d peak with BZ substitution. Scanning electron microscopy (SEM) cross-sectional photographs of the films show smaller grain size and greater porosity with BZ addition. The remanent polarization (2Pr) was significantly reduced from ˜16.4 µC/cm2 for SBT to ˜2.3 µC/cm2 for SBT with 7% BZ. Capacitance-voltage measurements performed at a frequency of 1 MHz showed butterfly type hysteresis loops, which is further evidence of ferroelectricity of the modified SBT, and dielectric constant of 135 for SBT with 7% BZ. Leakage current measurements showed one order of magnitude higher leakage current for SBT with 5% BZ compared to SBT. Lower film dielectric constant leads to higher leakage current in BZ doped SBT. Although leakage mechanisms predict this general trend, it runs counter to the objective of preparing ferroelectric films with low leakage and low dielectric constants for ferroelectric gate field-effect transistor (FeFET) type memory.

  13. Studies on structural, optical, magnetic, and resistive switching properties of doped BiFe1-xCrxO3 thin films

    NASA Astrophysics Data System (ADS)

    Sharma, Y.; Martinez, R.; Agarwal, R.; Barrionuevo, D.; Katiyar, R. K.; Kumar, A.; Katiyar, R. S.

    2016-11-01

    We report the effect of multivalent Cr-ion doping on the structural, optical, magnetic, and resistive switching properties of BiFe1-xCrxO3 (BFCO) thin films (where, 0 ≤ x ≤ 0.15). BFCO thin films were deposited on Pt/TiO2/SiO2/Si (100) substrate using pulsed laser deposition technique. X-ray diffraction and micro-Raman analysis revealed the presence of a secondary phase in BFCO thin films, above 5% Cr doping concentrations. Enhanced magnetization was observed in BFCO films owing to ferromagnetic superexchange interaction between Fe and Cr-ions. X-ray photoelectron spectroscopy measurements revealed the multivalent states of Cr and Fe-ions, where suppression of oxygen vacancies due to Cr-ion doping in BFCO films was discussed based on the defect chemistry viewpoint. Moreover, current conduction and resistive switching properties were studied and the dominant switching mechanism was explained in the light of oxygen vacancies assisted filamentary conduction model.

  14. On the character of the optical transitions in closed-shell transition metal oxides doped with Bi(3).

    PubMed

    Amer, M; Boutinaud, P

    2017-01-18

    A criterion is introduced to achieve the assignment of the optical features observed in the excitation spectra of Bi(3+) ions incorporated in closed-shell transition metal oxides. The model is based on the calculation of the energy associated with the lowest (1)S0 → (3)P1 intra-ionic transition of Bi(3+) (A-like transition), the metal-to-metal charge transfer (D-like transition) and the Stokes shift of the corresponding emission.

  15. Synergistic effect of oxygen vacancy and nitrogen doping on enhancing the photocatalytic activity of Bi2O2CO3 nanosheets with exposed {0 0 1} facets for the degradation of organic pollutants

    NASA Astrophysics Data System (ADS)

    Zhang, Yafei; Zhu, Gangqiang; Hojamberdiev, Mirabbos; Gao, Jianzhi; Hao, Jing; Zhou, Jianping; Liu, Peng

    2016-05-01

    Single-crystalline bare Bi2O2CO3 (BOC) nanosheets with exposed {0 0 1} facets and nitrogen-doped Bi2O2CO3 (NBOC) flower-like microstructures were synthesized by a simple hydrothermal method. The nitrogen-doped Bi2O2CO3 flower-like microstructures with oxygen vacancy (UV-NBOC) were obtained by irradiating the NBOC microstructures with UV light for 2 h in ethanol. The UV-vis diffuse reflectance spectra showed that the NBOC and UV-NBOC nanosheets exhibit an obvious red shift in light absorption band compared with the pure BOC nanosheets. Rhodamine B (RhB) was chosen as a model organic pollutant to verify the influence of oxygen vacancy and nitrogen doping on the photocatalytic activity of Bi2O2CO3 under simulated solar light irradiation. Judging from the kinetics of RhB photodegradation over the synthesized samples, a synergistic effect between oxygen vacancy and nitrogen doping was found with a remarkable increase (more than 10 and 2 times) in the photocatalytic activity of UV-NBOC compared with BOC and NBOC, respectively. Moreover, the UV-NBOC also exhibited an excellent cyclability and superior photocatalytic activity toward degradation of other organic pollutants (methylene blue, Congo red, Bisphenol A) under simulated solar light irradiation.

  16. Positron probing of gamma-irradiated Ge doped with P, As, Sb, and Bi: Changes in atomic structures of defects due to n→ p conversion

    NASA Astrophysics Data System (ADS)

    Arutyunov, N. Yu.; Emtsev, V. V.

    2009-12-01

    The emission of the high-momentum annihilation radiation from the subvalent ion core shells and electron density around a positron localized at a vacancy-group-V-impurity atom complexes produced in oxygen-lean Ge doped with P, As, Sb, and Bi by irradiation with 60Co gamma-rays at room temperature have been investigated with the help of the angular correlation of annihilation radiation (ACAR) before and after n→p conversion. The probability of positron annihilation in the subvalent shells of atoms incorporated in dominant radiation centers was found to be dependent on the ratio of the ion core radii ri(P5+, As5+)/ri(Ge4+)<1 and ri(Sb5+, Bi5+)/ri(Ge4+)>1, respectively. In passing from P to As impurity atoms the activation energy ΔEe of electron emission to be detected by DLTS measurements is increased by (+0.017 eV) vs. the increase of the electron density parameter to be reconstructed by ACAR data, Δr‧s=r‧s(As)-r‧s(P)≈0.029 a.u. On the contrary, in passing from Sb to Bi impurity atoms, ΔEe value is decreased by (-0.028 eV) whereas the electron density parameter rises by Δr‧s=r‧s(Bi)-r‧s(Sb)≈0.04 a.u. After n→p conversion a marked decrease in both the electron density and the number of ion cores around the positron points to the fact that the radiation-produced complexes with group-V-impurity atoms (P, As, Sb, Bi) are of a multi-vacancy character. The deep acceptor states in the forbidden gap (Ev+0.1), (Ev+0.12), (Ev+0.16) eV to be attributed to the P-, As-, Sb-, and Bi-containing multi-vacancy centers, respectively, were found to contribute to lessening the electron density around the trapped positron. It is argued that a close similarity of the As5+ and Ge4+ ion cores results in a small (but marked) augmentation in the electron density around the positron in As-containing multi-vacancy centers after n→p conversion. A trend for inward relaxation of the ion cores is observed in all radiation-produced centers studied.

  17. Magnetic excitations and phonons simultaneously studied by resonant inelastic x-ray scattering in optimally doped Bi1.5Pb0.55Sr1.6La0.4CuO6+δ

    DOE PAGES

    Peng, Y. Y.; Hashimoto, M.; Sala, M. Moretti; ...

    2015-08-24

    In this paper, magnetic excitations in the optimally doped high-Tc superconductor Bi1.5Pb0.55Sr1.6La0.4CuO6+δ (OP-Bi2201, Tc ≃ 34 K) are investigated by Cu L3 edge resonant inelastic x-ray scattering (RIXS), below and above the pseudogap opening temperature. At both temperatures the broad spectral distribution disperses along the (1,0) direction up to ~350 meV at zone boundary, similar to other hole-doped cuprates. However, above ~0.22 reciprocal lattice units, we observe a concurrent intensity decrease for magnetic excitations and quasielastic signals with weak temperature dependence. This anomaly seems to indicate a coupling between magnetic, lattice, and charge modes in this compound. We also comparemore » the magnetic excitation spectra near the antinodal zone boundary in the single layer OP-Bi2201 and in the bilayer optimally doped Bi1.5Pb0.6Sr1.54CaCu2O8+δ (OP-Bi2212, Tc ≃ 96 K). Finally, the strong similarities in the paramagnon dispersion and in their energy at zone boundary indicate that the strength of the superexchange interaction and the short-range magnetic correlation cannot be directly related to Tc, not even within the same family of cuprates.« less

  18. Two-dimensional bismuth-rich nanosheets through the evaporative thinning of Se-doped Bi2Te3

    NASA Astrophysics Data System (ADS)

    Hanson, Eve D.; Shi, Fengyuan; Chasapis, Thomas C.; Kanatzidis, Mercouri G.; Dravid, Vinayak P.

    2016-02-01

    High bulk conductance obscures the behavior of surface states in the prototypical topological insulators Bi2Te3 and Bi2Se3. However, ternary phases of Bi2Te3-ySey with balanced donor and acceptor levels may lead to large bulk resistivity, allowing for the observation of the surface states. Additionally, the contribution of the bulk conductance may be further suppressed by nanostructuring, increasing the surface-to-volume ratio. Herein we report the synthesis of a ternary tetradymite newly confined to two dimensions. Ultra-thin large-area stable nanosheets were fabricated via evaporative thinning of a Bi2Te2.9Se0.1 original phase. Owing to vapor pressure differences, a compositional shift to a final Bi-rich phase is observed. The Se/Te ratio of the nanosheet increases tenfold, due to the higher stability of the Bi-Se bonds. Hexagonal crystal symmetry is maintained despite dramatic changes in thickness and stoichiometry. Given that small variations in stoichiometry of this ternary system can incur large changes in carrier concentration and switch majority carrier type, the large compositional shifts found in this case imply that compositional analysis of similar CVD and PVD grown materials is critical to correctly interpret topological insulator performance. Further, the characterization techniques deployed, including STEM-EDS and ToF-SIMS, serve as a case study in determining such compositional shifts in two-dimensional form.

  19. Revealing the Cu(2+) ions localization at low symmetry Bi sites in photorefractive Bi12GeO20 crystals doped with Cu and V by high frequency EPR.

    PubMed

    Nistor, Sergiu V; Stefan, Mariana; Goovaerts, Etienne; Ramaz, François; Briat, Bernard

    2015-10-01

    The sites of incorporation of Cu(2+) impurity ions in Bi12GeO20 single crystals co-doped with copper and vanadium have been investigated by electron paramagnetic resonance (EPR). While the X-band EPR spectra consist of a simple broad (ΔB ∼50 mT) line with anisotropic lineshape, the W-band EPR spectra exhibit well resolved, strongly anisotropic lines, due to transitions within the 3d(9)-(2)D ground manifold of the Cu(2+) ions. The most intense group of lines, attributed to the dominant Cu(2+)(I) center, displays a characteristic four components hyperfine structure for magnetic field orientations close to a 〈110〉 direction. The g and A tensor main axes are very close to one of the 12 possible sets of orthogonal 〈1-10〉, 〈00-1〉 and 〈110〉 crystal directions. Several less intense lines, with unresolved hyperfine structure and similar symmetry properties, mostly overlapped by the Cu(2+)(I) spectrum, were attributed to Cu(2+)(II) centers. The two paramagnetic centers are identified as substitutional Cu(2+) ions at Bi(3+) sites with low C1 symmetry, very likely resulting from different configurations of neighboring charge compensating defects.

  20. Phase transformation induced by electric field and mechanical stress in Mn-doped (Bi1/2Na1/2)TiO3-(Bi1/2K1/2)TiO3 ceramics

    NASA Astrophysics Data System (ADS)

    Ehara, Yoshitaka; Novak, Nikola; Ayrikyan, Azatuhi; Geiger, Philipp T.; Webber, Kyle G.

    2016-11-01

    Electric-field- and stress-induced phase transformations were investigated in polycrystalline 0.5 mol. % Mn-doped (1-x)(Bi1/2Na1/2)TiO3-x(Bi1/2K1/2)TiO3 (x = 0.1, 0.2). To characterize the effect of electric field and stress on the stability of the ferroelectric and relaxor states, polarization- and current density-electric field curves, as well as the stress-strain response as a function of temperature were characterized. Analogous to the observed electrical behavior, the macroscopic mechanical constitutive behavior showed a closed hysteresis at elevated temperatures, indicating a reversible stress-induced relaxor-to-ferroelectric transformation. The electrical and mechanical measurements were used to construct electric field-temperature and stress-temperature phase diagrams, which show similar characteristics. These data show that a mechanical compressive stress, similarly to an electric field, can induce long-range ferroelectric order in a relaxor ferroelectric.

  1. Improved electron transfer and plasmonic effect in dye-sensitized solar cells with bi-functional Nb-doped TiO2/Ag ternary nanostructures

    NASA Astrophysics Data System (ADS)

    Park, Jung Tae; Chi, Won Seok; Jeon, Harim; Kim, Jong Hak

    2014-02-01

    TiO2 nanoparticles are surface-modified via atom transfer radical polymerization (ATRP) with a hydrophilic poly(oxyethylene)methacrylate (POEM), which can coordinate to the Ag precursor, i.e. silver trifluoromethanesulfonate (AgCF3SO3). Following the reduction of Ag ions, a Nb2O5 doping process and calcination at 450 °C, bi-functional Nb-doped TiO2/Ag ternary nanostructures are generated. The resulting nanostructures are characterized by energy-filtering transmission electron microscopy (EF-TEM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and UV-visible spectroscopy. The dye-sensitized solar cell (DSSC) based on the Nb-doped TiO2/Ag nanostructure photoanode with a polymerized ionic liquid (PIL) as the solid polymer electrolyte shows an overall energy conversion efficiency (η) of 6.9%, which is much higher than those of neat TiO2 (4.7%) and Nb-doped TiO2 (5.4%). The enhancement of η is mostly due to the increase of current density, attributed to the improved electron transfer properties including electron injection, collection, and plasmonic effects without the negative effects of charge recombination or problems with corrosion. These properties are supported by intensity modulated photocurrent/voltage spectroscopy (IMPS/IMVS) and incident photon-to-electron conversion efficiency (IPCE) measurements.TiO2 nanoparticles are surface-modified via atom transfer radical polymerization (ATRP) with a hydrophilic poly(oxyethylene)methacrylate (POEM), which can coordinate to the Ag precursor, i.e. silver trifluoromethanesulfonate (AgCF3SO3). Following the reduction of Ag ions, a Nb2O5 doping process and calcination at 450 °C, bi-functional Nb-doped TiO2/Ag ternary nanostructures are generated. The resulting nanostructures are characterized by energy-filtering transmission electron microscopy (EF-TEM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and UV-visible spectroscopy. The dye-sensitized solar cell (DSSC) based on the Nb-doped

  2. Structural, optical and transport properties of transition metals doped (A: Co, Ni and Cu) BiFe{sub 0.9}A{sub 0.1}O{sub 3}

    SciTech Connect

    Parveen, Azra Agrawal, Shraddha; Naqvi, A. H.

    2015-06-24

    Nanoparticles of pure and Transition metals doped (Co, Ni and Cu) BiFeO{sub 3} of the composition BiFe{sub 0.9}A{sub 0.1}O{sub 3} (A = Co, Ni and Cu) have been successfully synthesized by sol gel auto combustion method using citric acid as a chelating agent and calcinated at 300°C. Microstructural analyses were done by XRD, TEM and SEM techniques. The crystallite size was resolute by powder X-ray diffraction technique whereas, UV-VIS technique was used to study the optical properties and band gap (Eg) of all samples. The variation of a. c. conductivity has been studied as function of frequency. It was observed that doping causes decreases in the ac conductivity of the nanoparticles as compared with the pure nanoparticles. It was also observed that doping of Transition Metals affects the optical properties effectively and band gaps were also increased.

  3. High multi-photon visible upconversion emissions of Er{sup 3+} singly doped BiOCl microcrystals: A photon avalanche of Er{sup 3+} induced by 980 nm excitation

    SciTech Connect

    Li, Yongjin; Song, Zhiguo Li, Chen; Wan, Ronghua; Qiu, Jianbei; Yang, Zhengwen; Yin, Zhaoyi; Yang, Yong; Zhou, Dacheng; Wang, Qi

    2013-12-02

    Under 980 nm excitation, high multi-photon upconversion (UC) emission from the {sup 2}H{sub 11/2}/{sup 4}S{sub 3/2} (green) and {sup 4}F{sub 9/2} (red) levels of Er{sup 3+} ions were observed from Er{sup 3+} singly doped BiOCl microcrystals. These high-energy excited states were populated by a three to ten photon UC process conditionally, which depended on the pump power density and the Er{sup 3+} ion doping concentration, characterizing as a hetero-looping enhanced energy transfer avalanche UC process. UC emission lifetime and Raman analysis suggest that the unusual UC phenomena are initiated by the new and intense phonon vibration modes of BiOCl lattices due to Er{sup 3+} ions doping.

  4. Phosphorus Diffusion Mechanisms and Deep Incorporation in Polycrystalline and Single-Crystalline CdTe

    SciTech Connect

    Colegrove, Eric; Harvey, Steven P.; Yang, Ji-Hui; Burst, James M.; Albin, David S.; Wei, Su-Huai; Metzger, Wyatt K.

    2016-05-01

    A key challenge in cadmium telluride (CdTe) semiconductors is obtaining stable and high hole density. Group I elements substituting Cd can form ideal acceptors but easily self-compensate and diffuse quickly. For example, CdTe photovoltaics have relied on copper as a dopant, but copper creates stability problems and hole density that has not exceeded 1015 cm-3. If hole density can be increased beyond 10^16 cm-3, CdTe solar technology can exceed multicrystalline silicon and provide levelized costs of electricity below conventional energy sources. Group V elements substituting Te offer a solution, but are very difficult to incorporate. Using time-of-flight secondary-ion mass spectrometry, we examine bulk and grain boundary (GB) diffusion of phosphorous (P) in CdTe in Cd-rich conditions. We find that in addition to slow bulk diffusion and fast GB diffusion, there is a fast bulk diffusion component that enables deep P incorporation in CdTe. Detailed first-principles calculations indicate the slow bulk diffusion component is caused by substitutional P diffusion through the Te sublattice, whereas the fast bulk diffusion component is caused by P diffusing through interstitial lattice sites following the combination of a kick-out step and two rotation steps. The latter is limited in magnitude by high formation energy, but is sufficient to manipulate P incorporation. In addition to an increased physical understanding, this result opens up new experimental possibilities for Group V doping in CdTe materials.

  5. Energy storage property in lead free gd doped Na1/2Bi1/2TiO3 ceramics

    NASA Astrophysics Data System (ADS)

    Zannen, Moneim; Lahmar, Abdelilah; Khemakhem, Hamadi; El Marssi, Mimoun

    2016-11-01

    The Effect of Gadolinium ion incorporation on structure, dielectric and ferroelectric properties of lead-free Na1/2Bi1/2TiO3 (NBT) ceramic was investigated. X-ray diffraction allowed the identification of a pure phase isostructural to NBT. Dielectric measurements showed more pronounced anomalies in the range of depolarization temperature when Gd was added. Antiferroelectric-like behavior with a double pinched hysteresis loop was observed versus temperature in the doped phase. The energy-storage density (W) was calculated using the P-E loops data and was found to vary from 0.45 J cm-3 at room temperature to 0.85 J cm-3 at 413 K, which is promising for energy storage application.

  6. Spectroscopic properties of Bi2ZnOB2O6 single crystals doped with Pr3+ ions: Absorption and luminescence investigations

    NASA Astrophysics Data System (ADS)

    Kasprowicz, D.; Brik, M. G.; Jaroszewski, K.; Pedzinski, T.; Bursa, B.; Głuchowski, P.; Majchrowski, A.; Michalski, E.

    2015-09-01

    Nonlinear optical Bi2ZnOB2O6 single crystals doped with Pr3+ ions were grown using the Kyropoulos method. The absorption and luminescence properties of these new systems were investigated for the first time. The crystals are characterized by the large values of nonlinear optical coefficients. Effective luminescence of the Pr3+ ions makes this system an excellent candidate for the near-infrared (NIR) and/or ultraviolet (UV) to visible (VIS) laser converters. Based on the obtained experimental spectroscopic data, detailed analysis of the absorption and luminescence spectra was performed using the conventional Judd-Ofelt theory. Those transitions, which can be potentially used for laser applications of the Pr3+ ion, have been identified. In addition to the intensity parameters Ω2, Ω4, Ω6 the branching ratios and radiative lifetimes were estimated for all possible transitions in the studied spectral region.

  7. Bi2O3 nanoparticles encapsulated by three-dimensional porous nitrogen-doped graphene for high-rate lithium ion batteries

    NASA Astrophysics Data System (ADS)

    Fang, Wei; Zhang, Naiqing; Fan, Lishuang; Sun, Kening

    2016-11-01

    A composite consisting of Bi2O3 nanoparticles encapsulated by three-dimensional (3D) porous nitrogen-doped graphene is reported. Due to the 3D porous structure, the composite has large specific surface area of 112 m2 g-1, which can increase the contact area between active material and electrolyte. In addition, the 3D porous conductive framework can not only facilitate the fast electron transport and Li+ diffusion but also enhance the electrical conductivity of the composite. As expected, the composite shows an outstanding rate capability of 273 mAh g-1 at 10000 mA g-1 and a capacity of 417 mAh g-1 over 100 cycles at a current density of 200 mA g-1. Therefore, the composite is a promising candidate as an anode material for high-rate lithium ion batteries.

  8. Influence of Zr{sup 4+} doping on structural and electrical properties of SrBi{sub 4}Ti{sub 4}O{sub 15} ceramic

    SciTech Connect

    Nayak, P. Panigrahi, S.; Badapanda, T.

    2015-06-24

    This article reports a systematic study of doping effects on the structural and electrical properties of layer structured strontium bismuth titanate ceramic. In this study monophasic SrBi{sub 4}Ti{sub 4-x}Zr{sub x}O{sub 15} with x=0.00, 0.05, 0.10, 0.15, 0.20, 0.25 ceramics were synthesized from the solid-state reaction route. X-ray diffraction analysis shows that the Zr-modified SBT ceramics have a pure four-layer Aurivillius phase structure. Dielectric properties revealed that the diffuseness of phase transition increases where as corresponding permittivity value decrease with increasing Zr content. Piezoelectric properties of SBTZ ceramics were improved by the modification of Zirconium ion. Moreover, the reason behind for improvement of piezoelectric properties of modified SBTZ ceramics was also discussed.

  9. Effect of divalent (Sr, Ba) doping on the structural and magnetic properties of BiFeO{sub 3}

    SciTech Connect

    Rangi, Manisha Sanghi, Sujata; Agarwal, Ashish; Jangra, Sandhaya; Singh, Ompal

    2015-06-24

    The effect of divalent substitution on the crystal structure and magnetic properties of BiFeO{sub 3} has been investigated using X-ray diffraction and magnetic measurements technique. Single phase Bi{sub 0.8}A{sub 0.2}FeO{sub 3} (A= Sr, Ba) multiferroics have been synthesized by solid state reaction method. Rietveld analysis of the XRD patterns revealed that the prepared ceramics exhibit rhombohedral structure with space group R3c. M–H hysteresis loops were recorded at 5K revealed that Sr and Ba substitution transformed antiferromagnetic BiFeO3 into weak ferromagnetic. The enhanced magnetization with Sr and Ba addition is confirmed by the MT curve recorded at 1T. It is closely related to intrinsic structural distortion and modification of the antiparallel spin structure.

  10. Anatase/rutile bi-phasic titanium dioxide nanoparticles for photocatalytic applications enhanced by nitrogen doping and platinum nano-islands.

    PubMed

    Bear, Joseph C; Gomez, Virginia; Kefallinos, Nikolaos S; McGettrick, James D; Barron, Andrew R; Dunnill, Charles W

    2015-12-15

    Titanium dioxide (TiO2) bi-phasic powders with individual particles containing an anatase and rutile hetero-junction have been prepared using a sequential layer sol-gel deposition technique to soluble substrates. Sequential thin films of rutile and subsequently anatase TiO2 were deposited onto sodium chloride substrates yielding extremely fragile composite layered discs that fractured into "Janus-like" like powders on substrate dissolution. Nitrogen doped and platinum sputtered analogues were also prepared, and analysed for photocatalytic potential using the photodegradation of Rhodamine B, a model organic pollutant under UV and visible light irradiation. The materials were characterised using X-ray diffraction, X-ray photoelectron spectroscopy, energy dispersive X-ray spectroscopy, Raman spectroscopy and scanning electron microscopy. This paper sheds light on the relationship between anatase and rutile materials when in direct contact and demonstrates a robust method for the synthesis of bi-phasic nanoparticles, ostensibly of any two materials, for photocatalytic reactions or otherwise.

  11. Utilization of visible to NIR light energy by Yb+3, Er+3 and Tm+3 doped BiVO4 for the photocatalytic degradation of methylene blue

    NASA Astrophysics Data System (ADS)

    Regmi, Chhabilal; Kshetri, Yuwaraj K.; Ray, Schindra Kumar; Pandey, Ramesh Prasad; Lee, Soo Wohn

    2017-01-01

    Lanthanide-doped BiVO4 semiconductors with efficient photocatalytic activities over a broad range of the solar light spectrum have been synthesized by the microwave hydrothermal method using ethylenediaminetetraacetic acid (EDTA). The structural, morphological, and optical properties of the as-synthesized samples were evaluated by Scanning Electron Microscopy (SEM), Transmission Electron Microscopy (TEM), X-ray powder diffraction (XRD), Raman spectroscopy, FT-IR spectroscopy, UV-vis diffuse reflectance spectroscopy (DRS), and photoluminescence spectroscopy (PL). The chemical compositions were analyzed by X-ray photoelectron spectroscopy (XPS). The toxicity of the samples was measured using Mus musculus skin melanoma cells (B16-F10 (ATCC CRL-6475™)) and were found to be nontoxic for human cells. The photocatalytic efficiency of the prepared samples was evaluated by methylene blue (MB) degradation. The best photocatalytic activity was shown by BiVO4 with 6:3:3 mol percentage of Yb+3:Er+3:Tm+3 in all solar light spectrum. The synthesized samples possess low band gap energy and a hollow structure suitable for the better photocatalytic activity. The observed NIR photoactivity supports that the upconversion mechanism is involved in the overall photocatalytic process. Therefore, this approach provides a better alternative upconversion material for integral solar light absorption.

  12. Unbiased photoelectrochemical water splitting in Z-scheme device using W/Mo-doped BiVO4 and Zn(x)Cd(1-x)Se.

    PubMed

    Park, Hyun S; Lee, Heung Chan; Leonard, Kevin C; Liu, Guanjie; Bard, Allen J

    2013-07-22

    Photoelectrochemical water splitting to generate H2 and O2 using only photon energy (with no added electrical energy) has been demonstrated with dual n-type-semiconductor (or Z-scheme) systems. Here we investigated two different Z-scheme systems; one is comprised of two cells with the same metal-oxide semiconductor (W- and Mo-doped bismuth vanadate), that is, Pt-W/Mo-BiVO4, and the other is comprised of the metal oxide and a chalcogenide semiconductor, that is, Pt-W/Mo-BiVO4 and Zn(0.2)Cd(0.8)Se. The redox couples utilized in these Z-scheme configurations were I(-)/IO3(-) or S(2-)/S(n)(2-), respectively. An electrochemical analysis of the system in terms of cell components is shown to illustrate the behavior of the complete photoelectrochemical Z-scheme water-splitting system. H2 gas from the unbiased photolysis of water was detected using gas chromatography-mass spectroscopy and using a membrane-electrode assembly. The electrode configuration to achieve the maximum conversion efficiency from solar energy to chemical energy with the given materials and the Z-scheme is discussed. Here, the possibilities and challenges of Z-scheme unbiased photoelectrochemical water-splitting devices and the materials to achieve practical solar-fuel generation are discussed.

  13. Slurry spin coating of thin film yttria stabilized zirconia/gadolinia doped ceria bi-layer electrolytes for solid oxide fuel cells

    NASA Astrophysics Data System (ADS)

    Kim, Hyun Joong; Kim, Manjin; Neoh, Ke Chean; Han, Gwon Deok; Bae, Kiho; Shin, Jong Mok; Kim, Gyu-Tae; Shim, Joon Hyung

    2016-09-01

    Thin ceramic bi-layered membrane comprising yttria-stabilized zirconia (YSZ) and gadolinia-doped ceria (GDC) is fabricated by the cost-effective slurry spin coating technique, and it is evaluated as an electrolyte of solid oxide fuel cells (SOFCs). It is demonstrated that the slurry spin coating method is capable of fabricating porous ceramic films by adjusting the content of ethyl-cellulose binders in the source slurry. The porous GDC layer deposited by spin coating under an optimal condition functions satisfactorily as a cathode-electrolyte interlayer in the test SOFC stack. A 2-μm-thick electrolyte membrane of the spin-coated YSZ/GDC bi-layer is successfully deposited as a dense and stable film directly on a porous NiO-YSZ anode support without any interlayers, and the SOFC produces power output over 200 mW cm-2 at 600 °C, with an open circuit voltage close to 1 V. Electrochemical impedance spectra analysis is conducted to evaluate the performance of the fuel cell components in relation with the microstructure of the spin-coated layers.

  14. Enhanced infrared-to-visible up-conversion emission and temperature sensitivity in (Er3+,Yb3+, and W6+) tri-doped Bi4Ti3O12 ferroelectric oxide

    NASA Astrophysics Data System (ADS)

    Bokolia, Renuka; Mondal, Manisha; Rai, V. K.; Sreenivas, K.

    2017-02-01

    Strong up conversion (UC) luminescence at 527, 550, and 662 nm is compared under an excitation of 980 nm in single doped (Er3+), co-doped (Er3+/Yb3+), and (Er3+/Yb3+/W6+) tri-doped bismuth titanate (Bi4Ti3O12). For the co-doped system, the frequency (UC) emission intensity due to Er3+ ions is enhanced significantly in the green bands due to the efficient energy transfer from Yb3+ to Er3+ ions. Further increase in the emission intensity is seen with non-luminescent W6+ ions in the tri-doped system due to the modification in the local crystal field around the Er3+ ions, and is evidenced through a gradual change in the crystal structure of the host lattice with increasing W6+ content. The observed changes in the fluorescence lifetime and the associated energy transfer mechanisms are discussed. A progressive reduction of the lifetime of the 4S3/2 levels of Er3+ ions from 72 to 58.7 μs with the introduction of Yb3+ and W6+ dopant increases the transition probability and enhances the UC emission intensity. The efficiency of the energy transfer process ( η ) in the co-doped and tri-doped systems is found to be 9.4% and 18.6%, respectively, in comparison to the single doped system. Temperature sensing based on the fluorescence intensity ratio (FR) technique shows high sensitivity (0.0123 K-1) in the high temperature range (293 to 523 K) for an optimum content of Er3+, Yb3+, and W6+ with x = 0.03, y = 0.18, and z = 0.06 at. % in the tri-doped Bi4-x-yErxYbyTi3-zWzO12 ferroelectric composition, and is found useful for potential applications in optical thermometry.

  15. Eu(3+)-doped Bi4Si3O12 red phosphor for solid state lighting: microwave synthesis, characterization, photoluminescence properties and thermal quenching mechanisms.

    PubMed

    Zhang, Yan; Xu, Jiayue; Cui, Qingzhi; Yang, Bobo

    2017-02-15

    Europium-doped bismuth silicate (Bi4Si3O12) phosphor has been prepared by microwave irradiation method and its crystal structure is determined using Rietveld method. As-prepared phosphor consists of spherical, monodispersed particles with few agglomeration, high crystallinity, and narrow grain size distribution. The phosphor can be efficiently excited in the wavelength range of 260-400 nm, which matched well with the emission wavelengths of NUV LED chips. The photoluminescence spectra exhibit the highest emission peak at 703 nm originating from (5)D0 → (7)F4 transition of Eu(3+) under NUV excitation. The luminescence lifetime for Bi4Si3O12: 2 at% Eu(3+) phosphor decreases from 2.11 to 1.86 ms with increasing temperature from 10 to 498 K. This behavior of decays is discussed in terms of radiative and nonradiative decays dependence on temperature. The thermal quenching mechanism of (5)D0 emission of Eu(3+) in Bi4Si3O12 phosphor is a crossover process from the (5)D0 level of Eu(3+) to a ligand-to-europium (O(2-) → Eu(3+)) charge transfer state. The quantum efficiency of the phosphor under 393 nm excitation is found to be 14.5%, which is higher than that of the commercial red phosphors Y2O3: Eu(3+), Y2O2S: Eu(3+). The temperature effect on CIE coordinate was discussed in order to further investigate the potential applications.

  16. Microstructure and electrical properties in W/Nb co-doped Aurivillius phase Bi{sub 4}Ti{sub 3}O{sub 12} piezoelectric ceramics

    SciTech Connect

    Peng, Zhihang; Chen, Qiang; Chen, Yu; Xiao, Dingquan; Zhu, Jianguo

    2014-11-15

    Highlights: • W/Nb codoped BIT ceramics were prepared by the mixed oxides route. • High nd{sup 0} electronic configuration of W/Nb reduces the lattice distortion and T{sub C}. • Oxygen vacancy is responsible for dielectric relaxation and DC conduction process. • W/Nb additives significantly enhanced the piezoelectric coefficient d{sub 33} value. • BWNb-10 ceramics possessed large remnant polarization and a wide sintering window. - Abstract: Aurivillius-type Bi{sub 4}Ti{sub 3-x}W{sub x/2}Nb{sub x/2}O{sub 12} ceramics were prepared by a conventional solid-state sintering method. The XRD patterns demonstrated that all compositions were a single three layered crystalline structure, involving a reduction of lattice distortion with an increase in W/Nb doping level. The electrical properties including dielectric, electrical conduction and piezoelectric properties were tailored by W/Nb additives. The Curie-temperature decreased, whereas the electrical resistivity drastically increased with introduction of W/Nb donor dopants. As a result, a high electric field can be applied during the poling process. The Bi{sub 4}Ti{sub 2.9}W{sub 0.05}Nb{sub 0.05}O{sub 12} ceramics exhibited optimum piezoelectric coefficient (d{sub 33} ∼22.8 pC/N), large remnant polarization (2P{sub r} ∼26.8 μC/cm{sup 2} @ 200 °C) together with a high Curie temperature (T{sub C} ∼635 °C). Furthermore, this composition possessed a wide sintering window with outstanding piezoelectric properties. These parameters indicate that Bi{sub 4}Ti{sub 2.9}W{sub 0.05}Nb{sub 0.05}O{sub 12}-based ceramic is a promising candidate for high temperature piezoelectric applications.

  17. Eu3+-doped Bi4Si3O12 red phosphor for solid state lighting: microwave synthesis, characterization, photoluminescence properties and thermal quenching mechanisms

    PubMed Central

    Zhang, Yan; Xu, Jiayue; Cui, Qingzhi; Yang, Bobo

    2017-01-01

    Europium-doped bismuth silicate (Bi4Si3O12) phosphor has been prepared by microwave irradiation method and its crystal structure is determined using Rietveld method. As-prepared phosphor consists of spherical, monodispersed particles with few agglomeration, high crystallinity, and narrow grain size distribution. The phosphor can be efficiently excited in the wavelength range of 260–400 nm, which matched well with the emission wavelengths of NUV LED chips. The photoluminescence spectra exhibit the highest emission peak at 703 nm originating from 5D0 → 7F4 transition of Eu3+ under NUV excitation. The luminescence lifetime for Bi4Si3O12: 2 at% Eu3+ phosphor decreases from 2.11 to 1.86 ms with increasing temperature from 10 to 498 K. This behavior of decays is discussed in terms of radiative and nonradiative decays dependence on temperature. The thermal quenching mechanism of 5D0 emission of Eu3+ in Bi4Si3O12 phosphor is a crossover process from the 5D0 level of Eu3+ to a ligand-to-europium (O2− → Eu3+) charge transfer state. The quantum efficiency of the phosphor under 393 nm excitation is found to be 14.5%, which is higher than that of the commercial red phosphors Y2O3: Eu3+, Y2O2S: Eu3+. The temperature effect on CIE coordinate was discussed in order to further investigate the potential applications. PMID:28198396

  18. Eu3+-doped Bi4Si3O12 red phosphor for solid state lighting: microwave synthesis, characterization, photoluminescence properties and thermal quenching mechanisms

    NASA Astrophysics Data System (ADS)

    Zhang, Yan; Xu, Jiayue; Cui, Qingzhi; Yang, Bobo

    2017-02-01

    Europium-doped bismuth silicate (Bi4Si3O12) phosphor has been prepared by microwave irradiation method and its crystal structure is determined using Rietveld method. As-prepared phosphor consists of spherical, monodispersed particles with few agglomeration, high crystallinity, and narrow grain size distribution. The phosphor can be efficiently excited in the wavelength range of 260–400 nm, which matched well with the emission wavelengths of NUV LED chips. The photoluminescence spectra exhibit the highest emission peak at 703 nm originating from 5D0 → 7F4 transition of Eu3+ under NUV excitation. The luminescence lifetime for Bi4Si3O12: 2 at% Eu3+ phosphor decreases from 2.11 to 1.86 ms with increasing temperature from 10 to 498 K. This behavior of decays is discussed in terms of radiative and nonradiative decays dependence on temperature. The thermal quenching mechanism of 5D0 emission of Eu3+ in Bi4Si3O12 phosphor is a crossover process from the 5D0 level of Eu3+ to a ligand-to-europium (O2‑ → Eu3+) charge transfer state. The quantum efficiency of the phosphor under 393 nm excitation is found to be 14.5%, which is higher than that of the commercial red phosphors Y2O3: Eu3+, Y2O2S: Eu3+. The temperature effect on CIE coordinate was discussed in order to further investigate the potential applications.

  19. Thickness-dependent phase boundary in Sm-doped BiFeO3 piezoelectric thin films on Pt/Ti/SiO2/Si substrates.

    PubMed

    Sun, Wei; Li, Jing-Feng; Zhu, Fangyuan; Yu, Qi; Cheng, Li-Qian; Zhou, Zhen

    2015-08-14

    Sm-doped BiFeO3 thin films were fabricated on platinized silicon substrates via a sol-gel method. Sm contents and thicknesses were varied in a wide range to investigate their effects on the phase structure and piezoelectricity. X-ray diffraction and Raman spectroscopy experiments revealed a rhombohedral to orthorhombic phase transition and the co-existence of both phases in a certain compositional vicinity. It is found that the proportion of a rhombohedral phase increased with film thickness at the compositions corresponding to the phase transition boundary, indicating the influence of the film thickness on the phase structure. The phase transition phenomenon and film thickness effect on the boundary were also studied by piezoresponse force microscopy. Based on the structure analysis and piezoelectric characterization results, a phase diagram of thickness versus composition was proposed, in which the morphotropic phase boundary was located at 9% to 11% in thinner Sm-doped films and shifted towards the Sm-rich side with increasing thickness.

  20. Spectroscopic properties of B2O3-PbO-Bi2O3-GeO2 glass doped with Sm3+ and gold nanoparticles

    NASA Astrophysics Data System (ADS)

    Herrera, A.; Buchner, S.; Camerini, R. V.; Jacinto, C.; Balzaretti, N. M.

    2016-02-01

    Heavy metal oxide B2O3-PbO-Bi2O3-GeO2 transparent glass doped with Sm3+ was synthesized and implanted with Au+ using energy of 300 keV and fluence of 1 × 1016 cm-2. The annealing of the implanted glass at moderate temperature below the glass transition temperature induced the nucleation of gold nanoparticles, confirmed by the characteristic absorption band in the visible range and by transmission electron microscopy. Using Miés and Doylés theories for the surface plasmon resonance, the average size of the gold nanoparticles was about 4.6 nm, similar to the values observed by transmission electron microscopy. It was also observed the crystallization of a thin layer of the glass at the implanted surface after annealing, detected by X-ray diffraction and scanning electron microscope. Visible and near-infrared emission of Sm3+ was enhanced after annealing of the glass implanted with gold. Judd-Ofelt parameters and radiative parameters were calculated for the glass doped with Sm3+ with and without gold nanoparticles.

  1. Topological insulator: Bi{sub 2}Se{sub 3}/polyvinyl alcohol film-assisted multi-wavelength ultrafast erbium-doped fiber laser

    SciTech Connect

    Guo, Bo; Yao, Yong Yang, Yan-Fu; Yuan, Yi-Jun; Wang, Rui-Lai; Wang, Shu-Guang; Ren, Zhong-Hua; Yan, Bo

    2015-02-14

    We experimentally demonstrate a multi-wavelength ultrafast erbium-doped fiber laser incorporating a μm-scale topological insulator: Bi{sub 2}Se{sub 3}/Polyvinyl Alcohol film as both an excellent saturable absorber for mode-locking and a high-nonlinear medium to induce a giant third order optical nonlinear effect for mitigating the mode competition of erbium-doped fiber laser and stabilizing the multi-wavelength oscillation. By properly adjusting the pump power and the polarization state, the single-, dual-, triple-, four-wavelength mode-locking pulse could be stably initiated. For the four-wavelength operation, we obtain its pulse width of ∼22 ps and a fundamental repetition rate of 8.83 MHz. The fiber laser exhibits the maximum output power of 9.7 mW with the pulse energy of 1.1 nJ and peak power of 50 W at the pump power of 155 mW. Our study shows that the simple, stable, low-cost multi-wavelength ultrafast fiber laser could be applied in various potential fields, such as optical communication, biomedical research, and radar system.

  2. Review on first-principles study of defect properties of CdTe as a solar cell absorber

    NASA Astrophysics Data System (ADS)

    Yang, Ji-Hui; Yin, Wan-Jian; Park, Ji-Sang; Ma, Jie; Wei, Su-Huai

    2016-08-01

    CdTe is one of the leading materials for high-efficiency, low-cost, and thin-film solar cells. In this work, we review the recent first-principles study of defect properties of CdTe and present that: (1) When only intrinsic defects are present, p-type doping in CdTe is weak and the hole density is low due to the relatively deep acceptor levels of Cd vacancy. (2) When only intrinsic defects present, the dominant non-radiative recombination center in p-type CdTe is T{e}Cd2+, which limits the carrier lifetime to be around 200 ns. (3) Extrinsic p-type doping in CdTe by replacing Te with group V elements generally will be limited by the formation of AX centers. This could be overcome through a non-equilibrium cooling process and the hole density can achieve {10}17 {{{cm}}}-3. However, the long-term stability will be a challenging issue. (4) Extrinsic p-type doping by replacing Cd with alkaline group I elements is limited by alkaline interstitials and a non-equilibrium cooling process can efficiently enhance the hole density to the order of {10}17 {{{cm}}}-3. (5) Cu and Cl treatments are discussed. In bulk CdTe, Cu can enhance p-type doping, but Cl is found to be unsuitable for this. Both Cu and Cl show segregation at grain boundaries, especially at those with Te-Te wrong bonds. (6) External impurities are usually incorporated by diffusion. Therefore, the diffusion processes in CdTe are investigated. We find that cation interstitial (Nai, Cui) diffusion follows relatively simple diffusion paths, but anion diffusion (Cli, Pi) follows more complicated paths due to the degenerated defect wavefunctions.

  3. Review on first-principles study of defect properties of CdTe as a solar cell absorber

    SciTech Connect

    Yang, Ji-Hui; Yin, Wan-Jian; Park, Ji-Sang; Ma, Jie; Wei, Su-Huai

    2016-07-15

    CdTe is one of the leading materials for high-efficiency, low-cost, and thin-film solar cells. In this work, we review the recent first-principles study of defect properties of CdTe and present that: (1) When only intrinsic defects are present, p-type doping in CdTe is weak and the hole density is low due to the relatively deep acceptor levels of Cd vacancy. (2) When only intrinsic defects present, the dominant non-radiative recombination center in p-type CdTe is Te-2+/Cd, which limits the carrier lifetime to be around 200 ns. (3) Extrinsic p-type doping in CdTe by replacing Te with group V elements generally will be limited by the formation of AX centers. This could be overcome through a non-equilibrium cooling process and the hole density can achieve 10^17 cm-3. However, the long-term stability will be a challenging issue. (4) Extrinsic p-type doping by replacing Cd with alkaline group I elements is limited by alkaline interstitials and a non-equilibrium cooling process can efficiently enhance the hole density to the order of 10^17 cm-3. (5) Cu and Cl treatments are discussed. In bulk CdTe, Cu can enhance p-type doping, but Cl is found to be unsuitable for this. Both Cu and Cl show segregation at grain boundaries, especially at those with Te-Te wrong bonds. (6) External impurities are usually incorporated by diffusion. Therefore, the diffusion processes in CdTe are investigated. We find that cation interstitial (Nai, Cui) diffusion follows relatively simple diffusion paths, but anion diffusion (Cli, Pi) follows more complicated paths due to the degenerated defect wavefunctions.

  4. Improved ferroelectric polarization of V-doped Bi{sub 6}Fe{sub 2}Ti{sub 3}O{sub 18} thin films prepared by a chemical solution deposition

    SciTech Connect

    Song, D. P.; Yang, J. Yuan, B.; Zuo, X. Z.; Tang, X. W.; Chen, L.; Song, W. H.; Zhu, X. B.; Sun, Y. P.

    2015-06-28

    We prepared V-doped Bi{sub 6}Fe{sub 2}Ti{sub 3}O{sub 18} thin films on Pt/Ti/SiO{sub 2}/Si (100) substrates by using a chemical solution deposition route and investigated the doping effect on the microstructure, dielectric, leakage, and ferroelectric properties of Bi{sub 6}Fe{sub 2}Ti{sub 3}O{sub 18} thin films. The Bi{sub 5.97}Fe{sub 2}Ti{sub 2.91}V{sub 0.09}O{sub 18} thin film exhibits improved dielectric properties, leakage current, and ferroelectric properties. The incorporation of vanadium resulted in a substantially enhanced remnant polarization (2P{sub r}) over 30 μC/cm{sup 2} in Bi{sub 5.97}Fe{sub 2}Ti{sub 2.91}V{sub 0.09}O{sub 18} thin film compared with 10 μC/cm{sup 2} in Bi{sub 6}Fe{sub 2}Ti{sub 3}O{sub 18} thin film. It is demonstrated that the improved properties may stem from the improvement of crystallinity of the films with the contribution of suppressed oxygen vacancies and decreased mobility of oxygen vacancies caused by the V-doping. The results will provide a guidance to optimize the ferroelectric properties in Bi{sub 6}Fe{sub 2}Ti{sub 3}O{sub 18} thin films by chemical solution deposition, which is important to further explore single-phase multiferroics in the n = 5 Aurivillius thin films.

  5. Thermoluminescence studies of Nd doped Bi4Ge3O12 crystals irradiated by UV and beta sources.

    PubMed

    Karabulut, Y; Canimoglu, A; Ekdal, E; Ayvacikli, M; Can, N; Karali, T

    2016-07-01

    Thermoluminescence (TL) glow curves of pure and rare earth doped bismuth germanate (BGO) were investigated under UV and beta radiation. The glow curves of pure BGO crystal present different patterns for both kinds of radiation. The TL glow curves of BGO crystals doped with Nd ions are similar to that of pure BGO under UV radiation. The kinetic parameters, kinetic order (b), activation energy (E) and frequency factor (s) of the TL glow curves of pure BGO crystal have been determined by peak shape method. Activation energies of 3 peaks obtained by PS were found to be 1.81, 1.15 and 1.78, respectively.

  6. K-edge EXAFS and XANES studies of Cu in CdTe thin-film solar cells

    NASA Astrophysics Data System (ADS)

    Liu, Xiangxin; Gupta, Akhlesh; Compaan, Alvin D.; Leyarovska, Nadia; Terry, Jeff

    2002-03-01

    Copper has been identified as a very important dopant element in CdTe thin-film solar cells. Cu is a deep acceptor in CdTe and is commonly used to obtain a heavily doped, low resistance back contact to polycrystalline CdTe. Cu also helps to increase the open circuit voltage of the cell. However, Cu is also a fast diffuser in CdTe, especially along grain boundaries, and can accumulate at the CdS/CdTe junction. It is suspected of leading to cell performance degradation in some cases. The present study is designed to help identify the lattice location of the Cu in CdTe. Cu K-edge, x-ray absorption (XAS) measurements were conducted on Cu in thin films of CdTe. Experiments were performed at the MR-CAT beamline at the Advanced Photon Source. The 3 mm CdTe layers were magnetron sputtered onto fused silica substrates. Some films were diffused with Cu from a 200 Å layer of evaporated Cu. XAS spectra were collected in fluorescence geometry with a 13 elements Ge detector. Quantitative fluorescence spectroscopy measurements were also performed. Details of the Cu environment and possible changes with time will be reported.

  7. Study of tellurium precipitates in CdTe crystals

    NASA Technical Reports Server (NTRS)

    Jayatirtha, H. N.; Henderson, D. O.; Burger, A.; Volz, M. P.

    1993-01-01

    The effect of tellurium precipitates was studied in medium resistivity (10 exp 3-10 exp 6 ohm cm) undoped and Cl-doped CdTe using differential scanning calorimetry (DSC) and mid-infrared spectroscopy and the results were correlated with near-infrared microscopy photographs. When present in a significant quantity (about 0.25 wt pct), we show that Te precipitates are detectable using DSC measurements. In the mid-infrared, the contribution of the absorption by free-carriers is negligible, and therefore, the effect of the Te precipitates in these crystals can be considered uncoupled from the effects of Cd vacancies.

  8. Spin relaxation of electrons in bulk CdTe

    NASA Astrophysics Data System (ADS)

    Sprinzl, Daniel; Nahalkova, Petra; Kunc, Jan; Maly, Petr; Horodysky, Petr; Grill, Roman; Belas, Eduard; Franc, Jan; Nemec, Petr

    2007-03-01

    We report on the measurements of the spin relaxation time T1 of photo-excited electrons in bulk CdTe. The carrier dynamics were investigated by transient absorption experiments using 80 fs circularly polarized laser pulses at sample temperatures from 20 to 300 K. We studied both p and n type doped CdTe samples, which were prepared in the form of thin platelets from the crystals grown by the modified Bridgman method. The obtained results are compared with the spin relaxation times reported for other semiconductors with the same crystal structure (e.g., GaAs [1]). Finally, the relative contributions of the D'yakonov-Perel, Elliott-Yafet, Bir-Aronov-Pikus, and other mechanisms to the measured spin relaxation times in CdTe are discussed. This work was supported by the Grant Agency of the Czech Republic (grant 202/03/H003), by the Ministry of Education of the Czech Republic in the framework of the research centre LC510 and the research plan MSM 0021620834. [1] J. M. Kikkawa and D. D. Awschalom, Phys. Rev. Lett. 80, 4313 (1998).

  9. One-Dimensional Reaction-Diffusion Simulation of Cu Migration in Polycrystalline CdTe Solar Cells

    SciTech Connect

    Guo, Da; Akis, Richard; Brinkman, Daniel; Sankin, Igor; Fang, Tian; Vasileska, Dragica; Ringhofer, Christain

    2014-06-13

    In this work, we report on developing 1D reaction-diffusion solver to understand the kinetics of p-type doping formation in CdTe absorbers and to shine some light on underlying causes of metastabilities observed in CdTe PV devices. Evolution of intrinsic and Cu-related defects in CdTe solar cell has been studied in time-space domain self-consistently with free carrier transport and Poisson equation. Resulting device performance was simulated as a function of Cu diffusion anneal time showing pronounced effect the evolution of associated acceptor and donor states can cause on device characteristics. Although 1D simulation has intrinsic limitations when applied to poly-crystalline films, the results suggest strong potential of the approach in better understanding of the performance and metastabilities of CdTe photovoltaic device.

  10. Luminescence efficiency growth in wide band gap semiconducting Bi2O3 doped Cd0.4Pb0.1B0.5 glasses and effect of γ-irradiation

    NASA Astrophysics Data System (ADS)

    Marzouk, M. A.; Ibrahim, S.; Hamdy, Y. M.

    2014-11-01

    Cadmium lead borate glasses together with other glasses containing different Bi2O3-doping concentrations (2.5, 5, 7.5, 10 mol%) were prepared by conventional melt annealing method. The density and molar volume values were calculated to obtain some insight on the packing density and arrangement in the network. Also their optical and structural properties have been characterized by means of X-ray diffraction, UV-visible spectroscopy, luminescence spectroscopy and FTIR spectroscopy. Optical measurements have been used to determine the optical band gap (Eg), Urbach energy (ΔE) and the refractive index (n). The results demonstrate the effective rule of Bi2O3 on the studied glasses. The undoped and Bi2O3 doped - glass show strong extended UV-near visible absorption bands which are attributed to the collective presence of both trace iron impurities from raw materials and also the sharing of bismuth Bi+3 ions. Furthermore, the luminescence intensity strongly increases with increasing Bi2O3 content which may be attributed to transfer of energy from transitions in its energy levels. It has been revealed that the decreasing values of optical band gap and band tail can be understood and related in terms of the structural changes that are taking place in the glass samples. The infrared absorption spectra of the prepared glasses show characteristic absorption bands related to the borate network (BO3, BO4 groups) together with vibrational modes due to Bi-O groups upon the introduction of Bi2O3. The prepared samples reveal a very limited response towards of gamma irradiation which reflects its shielding behavior towards the effect of such type of irradiation.

  11. Novel Y doped Bi{sub 2}WO{sub 6} photocatalyst: Hydrothermal fabrication, characterization and enhanced visible-light-driven photocatalytic activity for Rhodamine B degradation and photocurrent generation

    SciTech Connect

    Cao, Ranran; Huang, Hongwei; Tian, Na; Zhang, Yihe; Guo, Yuxi; Zhang, Tierui

    2015-03-15

    Visible-light-driven (VLD) Yttrium (Y) ion doped Bi{sub 2}WO{sub 6} photocatalyst has been synthesized via a facile hydrothermal route. Incorporation of Y{sup 3} {sup +} into Bi{sub 2}WO{sub 6} lattice was successfully confirmed by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and ICP analysis. The microstructure and optical property of the as-prepared samples have been characterized by scanning electron microscopy (SEM), transmission electron microscopy (TEM), nitrogen adsorption–desorption isotherm and UV–vis diffuse reflectance spectra (DRS). The photocatalytic experiments indicated that the Y-Bi{sub 2}WO{sub 6} showed a much higher photocatalytic activity than the pristine Bi{sub 2}WO{sub 6} for the degradation of Rhodamine B (RhB) and photocurrent (PC) generation. This enhancement should be ascribed to the slightly increased band gap and the generated defects by Y{sup 3} {sup +} doping, thus resulting in a much lower recombination rate of the photoinduced electrons and holes. Such a process was verified by the photoluminescence (PL) spectroscopy. In addition, the active species trapping experiments indicated that holes (h{sup +}) and superoxide radicals (·O{sub 2}{sup −}) play important roles in the photocatalytic reaction. - Highlights: • Novel Y-Bi{sub 2}WO{sub 6} photocatalyst has been synthesized by a facile hydrothermal route. • Y-Bi{sub 2}WO{sub 6} exhibits a much higher photocatalytic activity than pristine Bi{sub 2}WO{sub 6}. • Holes (h{sup +}) and superoxide radicals (·O{sub 2}{sup −}) are the two main active species. • Y{sup 3} {sup +} ion can result in a low recombination of photogenerated electron and hole.

  12. Optimization of material/device parameters of CdTe photovoltaic for solar cells applications

    NASA Astrophysics Data System (ADS)

    Wijewarnasuriya, Priyalal S.

    2016-05-01

    Cadmium telluride (CdTe) has been recognized as a promising photovoltaic material for thin-film solar cell applications due to its near optimum bandgap of ~1.5 eV and high absorption coefficient. The energy gap is near optimum for a single-junction solar cell. The high absorption coefficient allows films as thin as 2.5 μm to absorb more than 98% of the above-bandgap radiation. Cells with efficiencies near 20% have been produced with poly-CdTe materials. This paper examines n/p heterostructure device architecture. The performance limitations related to doping concentrations, minority carrier lifetimes, absorber layer thickness, and surface recombination velocities at the back and front interfaces is assessed. Ultimately, the paper explores device architectures of poly- CdTe and crystalline CdTe to achieve performance comparable to gallium arsenide (GaAs).

  13. Origin of the low critical observing temperature of the quantum anomalous Hall effect in V-doped (Bi, Sb)2Te3 film

    SciTech Connect

    Li, W.; Claassen, M.; Chang, Cui -Zu; Moritz, B.; Jia, T.; Zhang, C.; Rebec, S.; Lee, J. J.; Hashimoto, M.; Lu, D. -H.; Moore, R. G.; Moodera, J. S.; Devereaux, T. P.; Shen, Z. -X.

    2016-09-07

    The experimental realization of the quantum anomalous Hall (QAH) effect in magnetically-doped (Bi, Sb)2Te3 films stands out as a landmark of modern condensed matter physics. However, ultra-low temperatures down to few tens of mK are needed to reach the quantization of Hall resistance, which is two orders of magnitude lower than the ferromagnetic phase transition temperature of the films. Here, we systematically study the band structure of V-doped (Bi, Sb)2Te3 thin films by angle-resolved photoemission spectroscopy (ARPES) and show unambiguously that the bulk valence band (BVB) maximum lies higher in energy than the surface state Dirac point. Finally, our results demonstrate clear evidence that localization of BVB carriers plays an active role and can account for the temperature discrepancy.

  14. Upconversion in Er3+-doped Bi2O3-Li2O-BaO-PbO tertiary glass.

    PubMed

    Tripathi, Garima; Rai, Vineet Kumar; Rai, D K; Rai, S B

    2007-04-01

    Radiative properties of Er3+-doped tertiary bismuth glass has been analyzed by the Judd-Ofelt theory. NIR to visible upconversion in the Er3+-doped glass has been reported. The mechanism for the upconversion is explained on the basis of quadratic dependence on excitation power and on the energy-matching scheme. Energy transfer is noted as the dominant process including the long-lived 4I11/2 level as the intermediate state for the green and red upconversion emissions. The effect of temperature on the fluorescence intensity of the two bands due to 2H11/2-->4I15/2 and 4S3/2-->4I15/2 transitions as well as on the transitions due to Stark components of the 4S3/2 level have been monitored and it is concluded that their intensity ratio may serve as better temperature sensing device.

  15. Development of Substrate Structure CdTe Photovoltaic Devices with Performance Exceeding 10%: Preprint

    SciTech Connect

    Dhere, R. G.; Duenow, J. N.; DeHart, C. M.; Li, J. V.; Kuciauskas, D.; Gessert, T. A.

    2012-08-01

    Most work on CdTe-based solar cells has focused on devices with a superstrate structure. This focus is due to the early success of the superstrate structure in producing high-efficiency cells, problems of suitable ohmic contacts for lightly doped CdTe, and the simplicity of the structure for manufacturing. The development of the CdCl2 heat treatment boosted CdTe technology and perpetuated the use of the superstrate structure. However, despite the beneficial attributes of the superstrate structure, devices with a substrate structure are attractive both commercially and scientifically. The substrate structure eliminates the need for transparent superstrates and thus allows the use of flexible metal and possibly plastic substrates. From a scientific perspective, it allows better control in forming the junction and direct access to the junction for detailed analysis. Research on such devices has been limited. The efficiency of these devices has been limited to around 8% due to low open-circuit voltage (Voc) and fill factor. In this paper, we present our recent device development efforts at NREL on substrate-structure CdTe devices. We have found that processing parameters required to fabricate high-efficiency substrate CdTe PV devices differ from those necessary for traditional superstrate CdTe devices. We have worked on a variety of contact materials including Cu-doped ZnTe and CuxTe. We will present a comparative analysis of the performance of these contacts. In addition, we have studied the influence of fabrication parameters on junction properties. We will present an overview of our development work, which has led to CdTe devices with Voc values of more than 860 mV and NREL-confirmed efficiencies approaching 11%.

  16. Nd3+-doped TeO2-Bi2O3-ZnO transparent glass ceramics for laser application at 1.06 μm

    NASA Astrophysics Data System (ADS)

    Hu, Xiaolin; Luo, Zhiwei; Liu, Taoyong; Lu, Anxian

    2017-04-01

    The high crystallinity transparent glass ceramics based on Nd3+-doped 70TeO2-15Bi2O3-15ZnO (TBZ) compositions were successfully prepared by two-step heat treatment process. The effects of Nd2O3 content on the thermal, structural, mechanical, and optical properties of TBZ glass ceramics were studied. The incorporation of Nd2O3 enhanced the crystallization tendency in the matrix glass composition. The crystal phase and morphology of Bi2Te4O11 in the glass ceramics were confirmed by X-ray diffraction and field emission scanning electron microscopy. Due to precipitate more crystal phase, the hardness values increased from 3.21 to 3.66 GPa. Eight absorption peaks were observed from 400 to 900 nm and three emission bands appeared in the range of 850-1400 nm. With the increasing of Nd2O3 content from 0.5 to 2.5 wt%, the intensity of absorption peaks enhanced and the emission intensity increased up to 1.0 wt% and then fell down for further dopant concentration. The fluorescence decay lifetime decreased rapidly starting from 1.5 wt% Nd2O3 content due to the obvious energy migration among Nd3+. According to the extreme strong emission band around 1062 nm and the optimum Nd2O3 content (1.0 wt%), N10 glass ceramic was considered as a potential material for 1.06 μm laser applications.

  17. Effect of MnO2 doping and temperature treatment on optical energy band gap properties in Zn-Bi-Ti-O varistor ceramics

    NASA Astrophysics Data System (ADS)

    Ghazali, M. S. M.; Abdullah, W. R. W.; Zakaria, A.; Kamari, H. M.; Rizwan, Z.

    2016-11-01

    In this study, the optical band-gap energy (Eg) was investigated with respect to MnO2 and sintering temperatures on ZnO based varistor ceramics. Eg of the ceramic (99-x) mol% ZnO + 0.5 mol% Bi2O3 + 0.5 mol% TiO2 + × MnO2 where × = 0, 0.2, 0.4, 0.6 and 0.8 mol%, were determined using UV-Vis spectrophotometer. The samples was prepared through solid-state route and sintered at the sintering temperature from 1110, 1140 and 1170 °C for 45 and 90 min in open air. At no doping of MnO2, the values of Eg are 2.991 ± 0.001, 2.989 ± 0.001 eV for 45 and 90 min sintering time; respectively. Eg was decreased to 2.192 ± 0.001 eV at 1140 °C at 45 min sintering time. Similar result of Eg was observed at longer heat treatment. Further addition of dopant causing the Eg decreases rapidly to 2.099 and 2.106 ± 0.001 eV at 45 and 90 min sintering time; respectively. XRD analysis indicates that there is hexagonal ZnO and secondary phases, Zn2MnO4, Bi4Ti3O12 and Zn2Ti3O8. The relative density of the sintered ceramics decreased or remain constant with the increase of MnO2 concentration for 45 min sintering time, however, further prolong sintering time; the relative density decreases form 90.25 to 88.35%. This indicates the pores are increasing with the increase of heat treatment. The variation of sintering temperatures to the optical band gap energy of based ZnO varistor doped with MnO2 due to the formation of interface states.

  18. Growth of nucleation sites on Pb-doped Bi{sub 2}Sr{sub 2}Ca{sub 1}Cu{sub 2}O{sub 8+{delta}}

    SciTech Connect

    Finnemore, D.K.; Xu, M.; Kouzoudis, D.; Bloomer, T.; Kramer, M.J.; McKernan, S.; Balachandran, U.; Haldar, P.

    1996-01-01

    In the growth of Bi{sub 2}Sr{sub 2}Ca{sub 2}Cu{sub 3}O{sub 10+{delta}} from mixed powders of Pb-doped Bi{sub 2}Sr{sub 2}Ca{sub 1}Cu{sub 2}O{sub 8+{delta}} and other oxides, it has been discovered that a dense array of hillocks or mesas grow at the interface between a Ag overlay and Pb-doped Bi{sub 2}Sr{sub 2}Ca{sub 1}Cu{sub 2}O{sub 8+{delta}} grains during the ramp up to the reaction temperature. As viewed in an environmental scanning electron microscope, the Ag coated grains develop a texture that looks like {open_quote}{open_quote}chicken pox{close_quote}{close_quote} growing on the grains at about 700{degree}C. These hillocks are about 100 nm across and are spaced at about 500 to 1000 nm. If there is no Ag, this texture does not develop. Preliminary measurements indicate that the hillocks are a recrystallization of (Bi,Pb){sub 2}Sr{sub 2}Ca{sub 1}Cu{sub 2}O{sub 8+{delta}}, and are definitely not a Pb rich phase. {copyright} {ital 1996 American Institute of Physics.}

  19. Topological transport and atomic tunnelling-clustering dynamics for aged Cu-doped Bi2Te3 crystals

    NASA Astrophysics Data System (ADS)

    Chen, Taishi; Chen, Qian; Schouteden, Koen; Huang, Wenkai; Wang, Xuefeng; Li, Zhe; Miao, Feng; Wang, Xinran; Li, Zhaoguo; Zhao, Bo; Li, Shaochun; Song, Fengqi; Wang, Jinlan; Wang, Baigeng; Van Haesendonck, Chris; Wang, Guanghou

    2014-09-01

    Enhancing the transport contribution of surface states in topological insulators is vital if they are to be incorporated into practical devices. Such efforts have been limited by the defect behaviour of Bi2Te3 (Se3) topological materials, where the subtle bulk carrier from intrinsic defects is dominant over the surface electrons. Compensating such defect carriers is unexpectedly achieved in (Cu0.1Bi0.9)2Te3.06 crystals. Here we report the suppression of the bulk conductance of the material by four orders of magnitude by intense ageing. The weak antilocalization analysis, Shubnikov-de Haas oscillations and scanning tunnelling spectroscopy corroborate the transport of the topological surface states. Scanning tunnelling microscopy reveals that Cu atoms are initially inside the quintuple layers and migrate to the layer gaps to form Cu clusters during the ageing. In combination with first-principles calculations, an atomic tunnelling-clustering picture across a diffusion barrier of 0.57 eV is proposed.

  20. Effect of coalesce doping of Nd and La on structure, dielectric, and magnetic properties of BiFeO3

    NASA Astrophysics Data System (ADS)

    Pandit, Pragya; Satapathy, S.; Gupta, P. K.; Sathe, V. G.

    2009-12-01

    Single phase Bi0.9-xLa0.1NdxFeO3 (BLNFOx) (x=0.05, 0.07, and 0.1) multiferroic ceramics were prepared to study the effect of combine substitution of La and Nd in BiFeO3 (BFO). X-ray diffraction studies revealed phase transition from rhombohedral (R3c) to triclinic (P1) on substitution of 05 and 07 mol % of Nd and subsequent transition to monoclinic C2/c with 10 mol % of Nd along with 10 mol % of La. These structural phase transitions and weakening of long range ferroelectric order with increasing x are also confirmed from Raman spectra. The existence of ferroelectricity and the corresponding Curie temperature for all noncentrosymmetric composition were determined using differential thermal analysis. Small remnant magnetization of 0.067 emu/g is observed in (BLNFO)x=0.07 as a result of collapse of space modulated spin structure. For pure BFO dielectric anomaly was observed at 355 °C corresponding to Neel temperature. Due to coexistence of long range ferroelectric order and canted antiferromagnetic orders in (BLNFO)x=0.05 and 0.07 the magnetoelectric effects were observed below Neel temperature at 302 and 294 °C, respectively, near which magnetoelectric coupling is obvious.

  1. Improved multiferroic properties in Sm-doped BiFeO3 thin films deposited using chemical solution deposition method

    NASA Astrophysics Data System (ADS)

    Singh, S. K.; Tomy, C. V.; Era, T.; Itoh, M.; Ishiwara, H.

    2012-05-01

    Sm-substituted (0% to 10%) BiFeO3 thin films were fabricated by chemical solution deposition on Pt/Ti/SiO2/Si substrates. X-ray diffraction analysis revealed that no secondary phase appeared even if Bi atoms were substituted with Sm atoms up to 10 at. %. 7.5 at. % Sm-substituted films show improved electrical properties and substitution was effective in improving the coercive field in the films. Sm-substitution shows improved ferroelectric as well as magnetic properties of the films. There is a noticeable reduction in the leakage current density (10-4 A/cm2) and increase in the polarization (70 μC/cm2) when the Sm concentration is kept around 7.5%. The magnetic moment obtained from the saturated magnetization curves shows a value of 0.3 μB/Fe compared to 0.04 μB/Fe for the parent compound. The results are important since it increases the potential of the material as a multiferroic compound.

  2. Topological transport and atomic tunnelling–clustering dynamics for aged Cu-doped Bi2Te3 crystals

    PubMed Central

    Chen, Taishi; Chen, Qian; Schouteden, Koen; Huang, Wenkai; Wang, Xuefeng; Li, Zhe; Miao, Feng; Wang, Xinran; Li, Zhaoguo; Zhao, Bo; Li, Shaochun; Song, Fengqi; Wang, Jinlan; Wang, Baigeng; Van Haesendonck, Chris; Wang, Guanghou

    2014-01-01

    Enhancing the transport contribution of surface states in topological insulators is vital if they are to be incorporated into practical devices. Such efforts have been limited by the defect behaviour of Bi2Te3 (Se3) topological materials, where the subtle bulk carrier from intrinsic defects is dominant over the surface electrons. Compensating such defect carriers is unexpectedly achieved in (Cu0.1Bi0.9)2Te3.06 crystals. Here we report the suppression of the bulk conductance of the material by four orders of magnitude by intense ageing. The weak antilocalization analysis, Shubnikov–de Haas oscillations and scanning tunnelling spectroscopy corroborate the transport of the topological surface states. Scanning tunnelling microscopy reveals that Cu atoms are initially inside the quintuple layers and migrate to the layer gaps to form Cu clusters during the ageing. In combination with first-principles calculations, an atomic tunnelling–clustering picture across a diffusion barrier of 0.57 eV is proposed. PMID:25247692

  3. The Shubnikov-de Haas effect and thermoelectric properties of Tl-doped Sb{sub 2}Te{sub 3} and Bi{sub 2}Se{sub 3}

    SciTech Connect

    Kulbachinskii, V. A. Kudryashov, A. A.; Kytin, V. G.

    2015-06-15

    The influence of doping with Tl on the Shubnikov-de Haas effect at T = 4.2 K in magnetic fields up to 38 T in p-Sb{sub 2−x}Tl{sub x}Te{sub 3} (x = 0, 0.005, 0.015, and 0.05) and n-Bi{sub 2−x}Tl{sub x}Se{sub 3} (x = 0, 0.01, 0.02, 0.04, and 0.06) single crystals is investigated. Extreme cross-sections of the Fermi surface in both materials decrease upon doping with Tl: the hole concentration decreases in Sb{sub 2−x}Tl{sub x}Te{sub 3} due to the donor effect of Tl and the electron concentration in n-Bi{sub 2−x}Tl{sub x}Se{sub 3} decreases due to the acceptor effect of Tl. The temperature dependences of the Seebeck coefficient, electrical conductivity, thermal conductivity, and dimensionless thermoelectric figure of merit in a temperature range of 77–300 K are measured. The thermal conductivity and electrical conductivity decrease upon doping with Tl both in p-Sb{sub 2−x}Tl{sub x}Te{sub 3} and in n-Bi{sub 2−x}Tl{sub x}Se{sub 3}. The Seebeck coefficient increases in all compositions upon an increase in doping over the entire measured temperature range. The thermoelectric figure of merit increases upon doping with Tl.

  4. CONTROL OF LASER RADIATION PARAMETERS: Picosecond pulse generation in a passively mode-locked Bi-doped fibre laser

    NASA Astrophysics Data System (ADS)

    Krylov, Aleksandr A.; Kryukov, P. G.; Dianov, Evgenii M.; Okhotnikov, Oleg G.

    2009-10-01

    CW passive mode locking is achieved in a bismuth-doped fibre laser using a semiconductor saturable absorber mirror optimised for operation in the range 1100-1200 nm. The pump source is a cw ytterbium fibre laser (1075 nm, maximum output power of 2.7 W), and the pulse parameters can be tuned by varying the intracavity group velocity dispersion using a diffraction grating pair. Stable laser pulses are obtained with a duration down to τp approx 1.1 ps.

  5. Preparation and properties of evaporated CdTe films

    NASA Astrophysics Data System (ADS)

    Bube, R. H.; Fahrenbruch, A. L.; Chien, K. F.

    1987-07-01

    Previous work on evaporated CdTe films for photovoltaics showed no clear path to successful p-type doping of CdTe during deposition. Post-deposition annealing of the films in various ambients thus was examined as a means of doping. Anneals were done in Te, Cd, P, and As vapors and in vacuum, air and Ar, all of which showed large effects on series resistance and diode parameters. With As, series resistance values of In/p-CdTe/graphite structures decreased markedly. This decrease was due to a decrease in grain boundary and/or back contact barrier height, and thus was due to large increases in mobility; the carrier density was not altered substantially. Although the series-resistance decreases were substantial, the diode characteristics became worse. The decreases were not observed when CdS/CdTe cells were fabricated on Te vapor-annealed films. Preparation of ZnO films by reactive evaporation yielded promising results. Deposition of p-ZnTe films by hot-wall vapor evaporation, using conventional techniques, yielded acceptable specimens.

  6. Structural, dielectric, ferroelectric, and electrocaloric properties of 2% Gd2O3 doping (Na0.5Bi0.5)0.94Ba0.06TiO3 ceramics

    NASA Astrophysics Data System (ADS)

    Turki, O.; Slimani, A.; Seveyrat, L.; Sebald, G.; Perrin, V.; Sassi, Z.; Khemakhem, H.; Lebrun, L.

    2016-08-01

    Structural, dielectric, and ferroelectric properties, and electrocaloric effects of pure and Gd doped ( Na0.5 Bi 0.5 ) 0.94 Ba 0.06 TiO 3 ceramics prepared by the conventional solid-solid method have been carried out. The X-ray diffraction analysis confirms a pure perovskite structure with the coexistence of tetragonal and rhombohedra structures in both powders. The thermal and frequency dependences of the dielectric constants of both ceramics revealed relaxor behavior. The two compounds exhibited two phase transitions: ferroelectric/antiferroelectric (FE/AFE) transition followed by an antiferroelectric/paraelectric (AFE/PE) transition at higher temperatures. Remarkably, we noticed that the small amount of Gd doping (2%) highly enhanced the dielectric properties of the parent compound by about 71%. The phase diagram was as well influenced by the Gd doping, where the FE/AFE transition temperature rose from 90 in the parent compound to 115 °C in the doped one whereas the AFE/PE transition temperature was decreased from 320 to 270 °C, respectively. The direct electrocaloric measurements performed on both compounds showed that the ferroelectric/antiferroelectric phase transition was accompanied by a significant electrocaloric effect. The Gd3+ doping improved the electrocaloric properties of the parent compound, where a remarkable temperature variation of 1.4 K was obtained in the doped ceramic. The results of the direct electrocaloric measurements will be compared and discussed with those derived from the indirect method.

  7. Influence of transition metal doping (X  =  Mn, Fe, Co, Ni) on the structure and bandgap of ferroelectric Bi3.15Nd0.85Ti2X1O12

    NASA Astrophysics Data System (ADS)

    Chen, Xiaoqin; Huang, Feng; Lu, Zhangwu; Xue, Yun; Min, Jingjing; Li, Jihui; Xiao, Jun; Yang, Fujun; Zeng, Xiangbin

    2017-03-01

    Although the internal field can effectively maintain the separation between photo-excited charge carriers, the wide bandgap restrains ferroelectric materials from visible light absorption. This study examined the effects of transition metal (TM) Mn, Fe, Co or Ni doping on the structure and bandgap of Bi3.15Nd0.85Ti3O12 (BNdT) prepared by the molten salt synthesis method. No other non-bismuth layered structure phases were introduced. Mn, Co or Ni doping does not change the three-layered perovskite structure of BNdT while Fe doping increases the layer number from three to four. The doping of TM ions decreases the bandgap obviously. Among them, Mn-doped BNdT shows the largest bandgap reduction by ~1.6 eV. The narrowed bandgap was discussed to be attributed to the electronegativity of TM ions and the lattice distortion induced by doping together. The present work provides an available way to control the bandgap of complex oxide materials and provides a new tool for manipulating oxide optoelectronics.

  8. Measurement of the topological surface state optical conductance in bulk-insulating Sn-doped Bi1.1Sb0.9Te2S single crystals

    NASA Astrophysics Data System (ADS)

    Cheng, Bing; Wu, Liang; Kushwaha, S. K.; Cava, R. J.; Armitage, N. P.

    2016-11-01

    Topological surface states have been extensively observed via optics in thin films of topological insulators. However, in typical thick single crystals of these materials, bulk states are dominant and it is difficult for optics to verify the existence of topological surface states definitively. In this Rapid Communication, we study the charge dynamics of the newly formulated bulk-insulating Sn-doped Bi1.1Sb0.9Te2S crystal by using time-domain terahertz spectroscopy. This compound shows much better insulating behavior than any other bulk-insulating topological insulators reported previously. The transmission can be enhanced an amount which is 5 % of the zero-field transmission by applying magnetic field to 7 T, an effect which we believe is due to the suppression of topological surface states. This suppression is essentially independent of the thicknesses of the samples, showing the two-dimensional nature of the transport. The suppression of surface states in field allows us to use the crystal slab itself as a reference sample to extract the surface conductance, mobility, charge density, and scattering rate. Our measurements set the stage for the investigation of phenomena out of the semiclassical regime, such as the topological magnetoelectric effect.

  9. Fast synthesis and single crystal growth of Pb-free and Pb-doped Bi-2223 superconductors using alkali chlorides flux technique

    NASA Astrophysics Data System (ADS)

    Lee, S.; Yamamoto, A.; Tajima, S.

    2001-09-01

    Here we report our recent results for the fast synthesis of Bi 2Sr 2Ca 2Cu 3O 10+ x phase in powder and single crystal forms using modified alkali chlorides flux technique. For many factors such as flux, crucibles materials, chemical and phase composition of the precursor, temperature and duration of heat treatment, evaporation rate of the flux, their effects on the formation and growth of 2223 have been studied. By optimization of these parameters, the single-phase samples of Pb-doped and Pb-free 2223 phase were obtained in the temperature range of 850-870°C and heat treatment for <15 h, that is much faster, compared with a solid-state reaction technique. The single crystals with the size of 0.5 mm were isolated and characterized using XRD, SEM/EDX, susceptibility and resistivity measurements. The effect of post-annealing in different atmospheres on the oxygen content and superconductivity of the samples was studied by TG and chemical analyses.

  10. Tm 3+ doped Bi 2O 3-GeO 2-Na 2O glasses for 1.8 μm fluorescence

    NASA Astrophysics Data System (ADS)

    Fan, Huiyan; Gao, Guojun; Wang, Guonian; Hu, Junjiang; Hu, Lili

    2010-03-01

    53.3BiO 1.5-33.3GeO 2-13.4NaO 0.5 (cation%) glasses with various Tm 3+ concentration were prepared by melt-quenching method. These glasses show high density, high refractive index, low phonon energy and good stability against crystallization. Absorption spectra of Tm 3+-doped bismuthate glass were measured to obtain the radiative lifetimes by Judd-Ofelt theory. The absorption (4.5 × 10 -21 cm 2) and emission (6.7 × 10 -21 cm 2) cross-sections were calculated by Beer-Lambert and McCumber theory. The results show that the Tm 3+ ( 3F 4 → 3H 6) in these glasses have high spontaneous radiative transition probabilities and large stimulated emission cross-section. Then the fluorescence emission spectra were measured under 808 nm excitation and the maximum emission intensity at 1.8 μm is obtained at 0.9 mol% Tm 2O 3 in the glasses.

  11. Electric-field-induced insulator to Coulomb glass transition via oxygen-vacancy migration in Ca-doped BiFe O3

    NASA Astrophysics Data System (ADS)

    Lim, Ji Soo; Lee, Jin Hong; Ikeda-Ohno, Atsushi; Ohkochi, Takuo; Kim, Ki-Seok; Seidel, Jan; Yang, Chan-Ho

    2016-07-01

    The multiferroic BiFe O3 (BFO) as a charge-transfer-type insulator is an interesting system in which to explore correlated electronic conduction. Here, we substitute divalent Ca ions into the parent BFO and apply an external electric field at elevated temperatures to spatially redistribute spontaneously created oxygen vacancies, thereby generating hole carriers in regions of less dense oxygen-vacancy concentrations. X-ray diffraction and photoemission spectroscopic measurement are employed to quantify a large variation of local oxygen-vacancy concentration, as much as ˜1021c m-3 , and explore the consequent evolution of electronic band structure. We find that a nonrigid polaronic band is created by hole doping as a result of a strong electron-lattice coupling. We also show strong evidence for the disorder-driven formation of a Coulomb-glass state through electronic transport measurements on a quantitative level. These spectroscopic and transport results can be combined and understood in the framework of intrinsic spatial inhomogeneity of the polaronic charge density. The finding not only offers a promising platform and methodology for examining the interplay of functional defects and correlated electronic behaviors, but also suggests a unique electronic conduction mechanism applicable to systems with coexistence of strong electron correlation, electron-lattice interaction, and randomness beyond the Coulomb-glass physics in semiconductors.

  12. Sn-doped Bi1.1Sb0.9Te2S bulk crystal topological insulator with excellent properties

    DOE PAGES

    S. K. Kushwaha; Pletikosic, I.; Liang, T.; ...

    2016-04-27

    A long-standing issue in topological insulator research has been to find a bulk single crystal material that provides a high quality platform for characterizing topological surface states without interference from bulk electronic states. This material would ideally be a bulk insulator, have a surface state Dirac point energy well isolated from the bulk valence and conduction bands, display quantum oscillations from the surface state electrons, and be growable as large, high quality bulk single crystals. Here we show that this materials obstacle is overcome by bulk crystals of lightly Sn-doped Bi1.1Sb0.9Te2S grown by the Vertical Bridgeman method. We characterize Sn-BSTSmore » via angle-resolved photoemission spectroscopy, scanning tunneling microscopy, transport studies, X-ray diffraction, and Raman scattering. We present this material as a high quality topological insulator that can be reliably grown as bulk single crystals and thus studied by many researchers interested in topological surface states.« less

  13. Fabricating photoelectrochemical aptasensor for selectively monitoring microcystin-LR residues in fish based on visible light-responsive BiOBr nanoflakes/N-doped graphene photoelectrode.

    PubMed

    Du, Xiaojiao; Jiang, Ding; Dai, Liming; Zhou, Lei; Hao, Nan; Qian, Jing; Qiu, Baijing; Wang, Kun

    2016-07-15

    The presence of microcystins in fish has been augmenting the risk of toxicity to animal and human health. Herein, a selective and sensitive method for detecting microcystin-LR (MC-LR) in fish samples by integrating the photoelectrochemical (PEC) technique and the specific recognition ability of aptamer was developed. Specifically, as an efficient PEC transducer, the BiOBr nanoflakes/N-doped graphene p-n heterojunction electrode was utilized as the aptamer immobilization platform via the π-π stacking interaction, which would be a biosensor enabling the convenient and exquisite PEC analysis. Subsequently, the PEC response of constructed aptasensor was specific binding to MC-LR. Other isoforms did not interfere with the detection process, and thus, it could be applied for the highly selective determination of MC-LR level. Under the optimized condition, the PEC signal versus the logarithm of the MC-LR concentration was in good linear relationship ranging from 0.1pM to 100nM with detection limit about 0.03pM. The constructed method was employed to analyze fish samples collected from the local supermarket. The overall analytical recovery of MC-LR in the fish matrices ranged from 97.8 to 101.6%, with relative standard deviation (RSD) of 2.52-5.14%, implying it would have great potential in farm product analysis.

  14. Sn-doped Bi1.1Sb0.9Te2S bulk crystal topological insulator with excellent properties

    PubMed Central

    Kushwaha, S. K.; Pletikosić, I.; Liang, T.; Gyenis, A.; Lapidus, S. H.; Tian, Yao; Zhao, He; Burch, K. S.; Lin, Jingjing; Wang, Wudi; Ji, Huiwen; Fedorov, A. V.; Yazdani, Ali; Ong, N. P.; Valla, T.; Cava, R. J.

    2016-01-01

    A long-standing issue in topological insulator research has been to find a bulk single crystal material that provides a high-quality platform for characterizing topological surface states without interference from bulk electronic states. This material would ideally be a bulk insulator, have a surface state Dirac point energy well isolated from the bulk valence and conduction bands, display quantum oscillations from the surface state electrons and be growable as large, high-quality bulk single crystals. Here we show that this material obstacle is overcome by bulk crystals of lightly Sn-doped Bi1.1Sb0.9Te2S grown by the vertical Bridgman method. We characterize Sn-BSTS via angle-resolved photoemission spectroscopy, scanning tunnelling microscopy, transport studies, X-ray diffraction and Raman scattering. We present this material as a high-quality topological insulator that can be reliably grown as bulk single crystals and thus studied by many researchers interested in topological surface states. PMID:27118032

  15. Process Development for High Voc CdTe Solar Cells: Phase I, Annual Technical Report, October 2005 - September 2006

    SciTech Connect

    Ferekides, C. S.; Morel, D. L.

    2007-04-01

    The focus of this project is the open-circuit voltage of the CdTe thin-film solar cell. CdTe continues to be one of the leading materials for large-scale cost-effective production of photovoltaics, but the efficiency of the CdTe solar cell has been stagnant for the last few years. At the manufacturing front, the CdTe technology is fast paced and moving forward with U.S.-based First Solar LLC leading the world in CdTe module production. To support the industry efforts and continue the advancement of this technology, it will be necessary to continue improvements in solar cell efficiency. A closer look at the state-of-the-art performance levels puts the three solar cell efficiency parameters of short-circuit current density (JSC), open-circuit voltage (VOC), and fill factor (FF) in the 24-26 mA/cm2, 844?850 mV, and 74%-76% ranges respectively. During the late 1090s, efforts to improve cell efficiency were primarily concerned with increasing JSC, simply by using thinner CdS window layers to enhance the blue response (<510 nm) of the CdTe cell. These efforts led to underscoring the important role 'buffers' (or high-resistivity transparent films) play in CdTe cells. The use of transparent bi-layers (low-p/high-p) as the front contact is becoming a 'standard' feature of the CdTe cell.

  16. Improved electrical properties of Sr0.8Bi2.2Ta2O9 films by ZrSiO4 doping for low voltage operations of metal-ferroelectric-insulator-Si devices

    NASA Astrophysics Data System (ADS)

    Lu, Xubing; Ishiwara, Hiroshi

    2009-03-01

    Sr0.8Bi2.2Ta2O9 (SBT) films were prepared by chemical solution deposition in which ZrSiO4 (ZSO) with concentration ranging from 0 to 10 wt % was incorporated for improving dielectric and leakage current characteristics of the films. X-ray diffraction analysis revealed that no secondary phase and clear degradation of crystallization can be found in ZSO-doped SBT films. Smaller grain size and reduced surface roughness were found for the samples with higher ZSO doping concentration as observed by atomic force microscopy and scanning electron microscopy. The dielectric constant was observed to be much reduced for ZSO-doped SBT films as well as the remnant polarization and coercive field. Films preannealed at 400 °C have a much smaller dielectric constant when compared with that of the films preannealed at 750 °C. Furthermore, a clear reduction in the leakage current and improved fatigue characteristics were observed for ZSO-doped SBT films preannealed at 400 °C. Such improved electrical properties as reduced dielectric constant, leakage current, and coercive field for the ZSO-doped SBT films will be very beneficial for the low voltage operations in metal-ferroelectric-insulator-Si devices.

  17. Phase transitions, domain structure, and pseudosymmetry in La- and Ti-doped BiFeO{sub 3}

    SciTech Connect

    Khesro, Amir; Boston, Rebecca; Sinclair, Derek C.; Reaney, Ian M.; Sterianou, Iasmi

    2016-02-07

    The phase transitions and domain structure of the promising PbO-free solid solution series, (0.95-x)BiFeO{sub 3}-xLaFeO{sub 3}-0.05La{sub 2/3}TiO{sub 3}, were investigated. X ray diffraction (XRD) revealed a transition from a ferroelectric R3c to a PbZrO{sub 3}-like (Pbam) antiferroelectric (AFE) structure at x = 0.15 followed by a transition to a paraelectric (PE, Pnma) phase at x > 0.30. The ferroelastic/ferroelectric twin domain width decreased to 10–20 nm with increasing x as the AFE phase boundary was approached but coherent antiphase tilted domains were an order of magnitude greater. This domain structure suggested the local symmetry (20 nm) is lower than the average structure (R3c, a{sup −}a{sup −}a{sup −}) of the tilted regions. The PE phase (x = 0.35) exhibited a dominant a{sup −}a{sup −}c{sup +} tilt system with Pnma symmetry but diffuse reflections at ∼1/4(ooe) positions suggest that short range antipolar order is residual in the PE phase. The complex domain structure and phase assemblage of this system challenge the conventional interpretation of phase transitions based on macroscopic symmetry. Instead, it supports the notion that frustration driven by chemical distributions at the nanometric level influences the local or pseudo-symmetry as well as the domain structure, with XRD giving only the average macroscopic structure.

  18. UV durable colour pigment doped SmA liquid crystal composites for outdoor trans-reflective bi-stable displays

    NASA Astrophysics Data System (ADS)

    Xu, H.; Davey, A. B.; Crossland, W. A.; Chu, D. P.

    2012-10-01

    High brightness trans-reflective bi-stable displays based on smectic A (SmA) liquid crystals (LCs) can have nearly perfect transparency in the clear state and very high reflection in the scattered state. Because the LC material in use is stable under UV radiation, this kind of displays can stand for strong day-light and therefore be ideal for outdoor applications from e-books to public signage and advertisement. However, the colour application has been limited because the traditional colourants in use are conventional dyes which are lack of UV stability and that their colours are easily photo bleached. Here we present a colour SmA display demonstrator using pigments as colourant. Mixing pigments with SmA LCs and maintain the desirable optical switching performance is not straightforward. We show here how it can be done, including how to obtain fine sized pigment nano-particles, the effects of particle size and size distribution on the display performance. Our optimized pigments/SmA compositions can be driven by a low frequency waveform (~101Hz) to a scattered state to exhibit colour while by a high frequency waveform (~103Hz) to a cleared state showing no colour. Finally, we will present its excellent UV life-time (at least <7.2 years) in comparison with that of dye composition (~2.4 years). The complex interaction of pigment nano-particles with LC molecules and the resulting effects on the LC electro-optical performances are still to be fully understood. We hope this work will not only demonstrate a new and practical approach for outdoor reflective colour displays but also provide a new material system for fundamental liquid crystal colloid research work.

  19. Phosphorus Diffusion Mechanisms and Deep Incorporation in Polycrystalline and Single-Crystalline CdTe

    NASA Astrophysics Data System (ADS)

    Colegrove, Eric; Harvey, Steven P.; Yang, Ji-Hui; Burst, James M.; Albin, David S.; Wei, Su-Huai; Metzger, Wyatt K.

    2016-05-01

    A key challenge in cadmium-telluride (CdTe) semiconductors is obtaining stable and high hole density. Group-I elements substituting Cd can form acceptors but easily self-compensate and diffuse quickly. For example, CdTe photovoltaics have relied on copper as a dopant, but this creates stability problems and hole density that has not exceeded 1015 cm-3 . If hole density can be increased beyond 1016 cm-3 , CdTe solar technology can exceed multicrystalline silicon performance and provide levelized costs of electricity below conventional energy sources. Group-V elements substituting Te offer a solution, but they are very difficult to incorporate. Using time-of-flight secondary-ion mass spectrometry, we examine bulk and grain-boundary diffusion of phosphorus (P) in CdTe in Cd-rich conditions. We find that in addition to slow bulk diffusion and fast grain-boundary diffusion, there is a critical fast bulk-diffusion component that enables deep P incorporation in CdTe. Detailed first-principle calculations indicate the slow bulk-diffusion component is caused by substitutional P diffusion through the Te sublattice, whereas the fast bulk-diffusion component is caused by P diffusing through interstitial lattice sites following the combination of a kick-out step and two rotation steps. The latter is limited in magnitude by high formation energy, but is sufficient to manipulate P incorporation. In addition to an increased physical understanding, these results open up experimental possibilities for group-V doping in CdTe applications.

  20. Calculation of the High-Temperature Point Defects Structure in Te-Rich CdTe

    NASA Astrophysics Data System (ADS)

    Dai, Shujun; Wang, Tao; Liu, Huimin; He, Yihui; Jie, Wanqi

    2016-10-01

    A thermodynamic equilibrium model for CdTe annealed under Te vapor is established, in which possible point defects and a defect reaction existing in undoped and In-doped Te-rich CdTe crystals are taken into consideration. Independent point defects, such as VCd, Cdi, and Tei, as well as defect complexes, namely TeCd-VCd (B complex), {Te}_{{Cd}}^{2 + } - {V}_{{Cd}}^{2 - } (D complex), {In}_{{Cd}}^{ + } - {V}_{{Cd}}^{ - } (A-center) and Tei-VCd (TeCd), are discussed based on the defect chemistry theory. More specially, the mass action law and quasi-chemical equations are used to calculate defects concentration and Fermi level in undoped and doped CdTe crystals with different indium concentrations. It is found that the Fermi level is controlled by a {V}_{{Cd}}^{2 - } , TeCd, and B/D-complex in undoped crystal. The concentration of VCd drops down in an obvious manner and that of TeCd rises for doped crystal with increasing [In].

  1. Spectroscopic properties of Er(3+)/Yb(3+) co-doped Bi(2)O(3)-B(2)O(3)-GeO(2) glasses.

    PubMed

    Zhang, Xudong; Xu, Tiefeng; Nie, Qiuhua; Dai, Shixun; Shen, Xiang; Zhang, Xianghua

    2007-05-01

    Er(3+)/Yb(3+) co-doped 60Bi(2)O(3)-(40 - x)B(2)O(3)-xGeO(2) (BBG; x=0, 5, 10, 15 mol%) glasses that are suitable for fiber lasers, amplifiers have been fabricated and characterized. The absorption spectra, emission spectra, and lifetime of the (4)I(13/2) level and quantum efficiency of Er(3+):(4)I(13/2) --> (4)I(15/2) transition were measured and calculated. With the substitution of GeO(2) for B(2)O(3), both Delta lambda(eff) and sigma(e) decrease from 75 to 71 nm and 9.88 to 8.12 x 10(-21) cm(2), respectively. The measured lifetime of the (4)I(13/2) level and quantum efficiency of Er(3+):(4)I(13/2) --> (4)I(15/2) transition increase from 1.18 to 1.5 ms and 36.2% to 43.2%, respectively. The emission spectra of Er(3+):(4)I(13/2) --> (4)I(15/2) transition was also analyzed using a peak-fit routine, and an equivalent four-level system was proposed to estimate the stark splitting for the (4)I(15/2) and (4)I(13/2) levels of Er(3+) in the BBG glasses. The results indicate that the (4)I(13/2) --> (4)I(15/2) emission of Er(3+) can be exhibit a considerable broadening due to a significant enhance the peak A, and D emission.

  2. Highly textured Sr, Nb co-doped BiFeO{sub 3} thin films grown on SrRuO{sub 3}/Si substrates by rf- sputtering

    SciTech Connect

    Ostos, C.; Raymond, O.; Siqueiros, J. M.; Suarez-Almodovar, N.; Bueno-Baques, D.; Mestres, L.

    2011-07-15

    In this study, (011)-highly oriented Sr, Nb co-doped BiFeO{sub 3} (BFO) thin films were successfully grown on SrRuO{sub 3}/Si substrates by rf-magnetron sputtering. The presence of parasite magnetic phases was ruled out based on the high resolution x-ray diffraction data. BFO films exhibited a columnar-like grain growth with rms surface roughness values of {approx_equal}5.3 nm and average grain sizes of {approx_equal}65-70 nm for samples with different thicknesses. Remanent polarization values (2P{sub r}) of 54 {mu}C cm{sup -2} at room temperature were found for the BFO films with a ferroelectric behavior characteristic of an asymmetric device structure. Analysis of the leakage mechanisms for this structure in negative bias suggests Schottky injection and a dominant Poole-Frenkel trap-limited conduction at room temperature. Oxygen vacancies and Fe{sup 3+}/Fe{sup 2+} trap centers are consistent with the surface chemical bonding states analysis from x-ray photoelectron spectroscopy data. The (011)-BFO/SrRuO{sub 3}/Si film structure exhibits a strong magnetic interaction at the interface between the multiferroic film and the substrate layer where an enhanced ferromagnetic response at 5 K was observed. Zero-field cooled (ZFC) and field cooled (FC) magnetization curves of this film system revealed a possible spin glass behavior at spin freezing temperatures below 30 K depending on the BFO film thickness.

  3. Effect of oxygen annealing on the multiferroic properties of Ca{sup 2+} doped BiFeO{sub 3} nanoceramics

    SciTech Connect

    Tirupathi, Patri; Mandal, Satish Kumar; Chandra, Amreesh

    2014-12-28

    The high leakage current in divalent ion doped BiFeO{sub 3} systems is limiting their large scale application. It is clearly shown that the methodology of oxygen annealing will prove to be an effective procedure for suppressing the detrimental consequences that originate from the oxygen vacancies. The samples annealed under oxygen also show different particle morphologies and packing density that can help in tuning the relevant physical properties, viz., magnetic, ferroelectric, and magnetoelectric. The difference in magnetic behaviour in samples annealed in air and oxygen can be explained in terms of the modification in the Fe-O-Fe bonds, domain wall pinning centres, and crystal anisotropy. Another important observation is the stabilization of a dielectric anomaly near the magnetic transition temperature. This observation can make this multiferroic system very interesting for application in sensors where the change in the magnetic parameters can be observed by monitoring the electrical parameters. Detailed analysis of the dielectric and impedance curves indicate towards the presence of non-Debye type processes in samples obtained by annealing in air or oxygen. From the calculated activation energy values, the vacancy related relaxation mechanism is predominant in air annealed samples, while the oxygen annealed samples show the presence of two type of relaxation processes, viz., electron hopping mechanism stabilizes at low temperature while, at higher temperatures, the process associated with the diffusion of doubly ionized oxygen ions predominates. The ac-conductivity data suggests that the correlated barrier tunnelling mechanism, where single electron or two electrons hopping through neighbouring lattice sites leads to ac-conduction.

  4. Novel and facile synthesis of Ba-doped BiFeO3 nanoparticles and enhancement of their magnetic and photocatalytic activities for complete degradation of benzene in aqueous solution.

    PubMed

    Soltani, Tayyebeh; Lee, Byeong-Kyu

    2016-10-05

    In this work, Bi1-x Bax FeO3 (x=0.05, 0.1 and 0.2mol%) multiferroic materials as visible-light photocatalysts were successfully synthesized via a simple and rapid sol-gel method, at a low temperature and with rapid calcination. Ba loading brought about a distorted structure of BiFeO3 magnetic nanoparticles (BFO MNPs) consisting of small, randomly oriented and non-uniform grains, leading to increased surface area and improved magnetic and photocatalytic activities. Doping of Ba(2+) into pure BFO (Bi1-x Bax FeO3, x=0.2mol%) greatly increased magnetic saturation to 3.0emu/g and significantly decreased the band-gap energy to 1.79eV, as compared to 2.1emu/g and 2.1eV, respectively, for pure BFO. Bi1-xBa xFeO3 of x=0.2mol% exhibited the greatest photocatalytic degradation effect after 60min of visible light irradiation, and reached 97% benzene removal efficiency, leading to production of a high concentration of carbon dioxide (CO2), with 93% and 82% reductions in chemical oxygen demand (COD) and total organic carbon (TOC), respectively. The identified major intermediate products of photodegradation enabled prediction of the proposed benzene degradation pathway. The enhanced photocatalytic activity of benzene removal is due to both mechanisms, photocatalytic and photo-Fenton catalytic degradation.

  5. Abnormal variation of band gap in Zn doped Bi{sub 0.9}La{sub 0.1}FeO{sub 3} nanoparticles: Role of Fe-O-Fe bond angle and Fe-O bond anisotropy

    SciTech Connect

    Xu, Xunling; Liu, Weifang E-mail: shouyu.wang@yahoo.com; Wu, Ping; Zhang, Hong; Guo, Minchen; Han, Yuling; Zhang, Chuang; Gao, Ju; Rao, Guanghui; Wang, Shouyu E-mail: shouyu.wang@yahoo.com

    2015-07-27

    Bi{sub 0.9}La{sub 0.1}FeO{sub 3} (BLFO) and Bi{sub 0.9}La{sub 0.1}Fe{sub 0.99}Zn{sub 0.01}O{sub 3} (BLFZO) nanoparticles were prepared via a sol-gel method. The oxygen vacancies and holes increase with Zn doping analyzed through X-ray photoelectron spectroscopy, which could contribute to the increase of leakage current density. However, with the increase of the defects (oxygen vacancies and holes), the band gap of BLFZO also is increased. To explain the abnormal phenomenon, the bandwidth of occupied and unoccupied bands was analyzed based on the structural symmetry driven by the Fe-O-Fe bond angle and Fe-O bond anisotropy.

  6. Structural, magnetic and magnetoelectric properties of single phase La3+ and Er3+ co-doped Bi0.85-x La0.15Er x FeO3 (0 ≤ x ≤ 0.1) ceramics

    NASA Astrophysics Data System (ADS)

    Manjusha; Yadav, K. L.; Mall, Ashish Kumar

    2016-11-01

    A sol-gel reaction method is used to prepare La3+ and Er3+ co-doped ceramic Bi0.85-x La0.15Er x FeO3 (x = 0, 0.05, 0.07 and 0.10) equivalently denoted as BLEFO. Bi0.85-x La0.15Er x FeO3 exhibits the structural transition from rhombohedral to a triclinic structure with quite small triclinic distortion; as confirmed by the Rietveld refinement analysis. Field emission scanning electron micrographs reveal the presence of interconnected spherical grains. From transmission electron microscopy, the average crystal size was found to be 60-65 nm. Co-doping with La and Er enhanced the magnetic properties such as saturation magnetization and magnetic moment of BiFeO3 as confirmed by vibrating sample magnetometer at 300 K and as well as by superconducting quantum interference device (SQUID) analysis at 5 K. An unusual behavior has been observed in BLEFO at 300 K, because it shows the weak ferromagnetic behavior besides its antiferromagnetic nature at room temperature. An irreversibility effect and a large bifurcation have been observed below room temperature in BLEFO in SQUID measurement. The value of magnetoelectric (ME) coupling coefficient increases from 2.60 (x = 0) to 6.58 (x = 0.10) mV cm-1-Oe at 3500 Oe. A negative temperature coefficient of the resistance behavior analogous to a semiconductor is confirmed by the impedance analysis. The enhanced multiferroic properties are attributed to the enhanced ME interaction, which results from the La and Er substitution at A site of BiFeO3.

  7. Aging in the relaxor and ferroelectric state of Fe-doped (1-x)(Bi{sub 1/2}Na{sub 1/2})TiO₃-xBaTiO₃ piezoelectric ceramics

    SciTech Connect

    Sapper, Eva; Dittmer, Robert; Rödel, Jürgen; Damjanovic, Dragan; Erdem, Emre; Keeble, David J.; Jo, Wook; Granzow, Torsten

    2014-09-14

    Aging of piezoelectric properties was investigated in lead-free (1–x)(Bi{sub 1/2}Na{sub 1/2})TiO₃-xBaTiO₃ doped with 1at.% Fe. The relaxor character of the un-poled material prevents macroscopic aging effects, while in the field-induced ferroelectric phase aging phenomena are similar to those found in lead zirconate titanate or barium titanate. Most prominent aging effects are the development of an internal bias field and the decrease of switchable polarization. These effects are temperature activated, and can be explained in the framework of defect complex reorientation. This picture is further supported by electron paramagnetic resonance spectra indicating the existence of (Fe{sub Ti}´-V{sub O}{sup ••}){sup •} defect complexes in the Fe-doped material.

  8. Application of Lithium Chloride Dopant in Fabrication of CdTe Solar Cells

    NASA Astrophysics Data System (ADS)

    Xu, Hang; Zeng, Guanggen; Feng, Lianghuan; Wu, Lili; Liu, Cai; Ren, Shengqiang; Li, Kang; Li, Bing; Li, Wei; Wang, Wenwu; Zhang, Jingquan

    2017-02-01

    We report use of lithium chloride (LiCl) as a non-Cd dopant to deal with the environmental issues associated with use of traditional CdCl2 dopant in CdTe solar cells. It has been found that, after LiCl treatment, device performance parameters including external quantum efficiency and conversion efficiency were improved considerably, being comparable to those of a counterpart treated with CdCl2. The optimal efficiency of 9.58% was obtained at 405°C, and V oc as high as ˜737.3 mV was obtained at 385°C. Thorough study of the properties of the CdTe film treated by LiCl by x-ray diffraction analysis, scanning electron microscopy, x-ray photoelectron spectroscopy, and secondary-ion mass spectroscopy further verified the feasibility of posttreatment with nontoxic LiCl for fabrication of CdTe photovoltaic devices. The doping level of p-type CdTe thin film was improved by lithium. This represents a nontoxic approach for fabrication of commercial CdS/CdTe thin-film solar cells with better performance.

  9. Effect of Doping with Substituent Bi Atoms on the Electrical Transport Properties of a Bi0.4Sb1.6Te3 Film Fabricated by Molecular Beam Epitaxy

    NASA Astrophysics Data System (ADS)

    Wang, Zhichong; Zhang, Xiangpeng; Wu, Yigui; Hu, Zhiyu

    2015-10-01

    A highly crystalline Bi0.4Sb1.6Te3 film was fabricated on a Si substrate by molecular beam epitaxy (MBE) at a substrate temperature of 280°C. On the basis of study of x-ray diffraction patterns and high-resolution transmission electron microscopy lattice fringes it was inferred that Bi atoms were successfully incorporated into Sb lattice sites, forming substituent Bi impurities. Reduction of the carrier concentration was ascribed to the increased resistance to formation of antisite defects when Sb was substituted by Bi. The reduced mobility was a result of enhanced grain boundary scattering and attraction by substituent Bi atoms. Analysis of temperature-dependent electrical transport properties revealed that introduction of Bi atoms resulted in deeper energy level impurities in the Bi0.4Sb1.6Te3 film and higher activation energy (43.2 meV) than the normal value at room temperature, leading to semiconductor characteristics of the film in the temperature range -50°C to 150°C.

  10. Intense 2.7 µm emission and structural origin in Er3+-doped bismuthate (Bi2O3-GeO2-Ga2O3-Na2O) glass.

    PubMed

    Guo, Yanyan; Li, Ming; Hu, Lili; Zhang, Junjie

    2012-01-15

    The 2.7 μm emission properties in Er3+-doped bismuthate (Bi2O3-GeO2-Ga2O3-Na2O) glass were investigated in the present Letter. An intense 2.7 μm emission in Er3+-doped bismuthate glass was observed. It is found that Er3+-doped bismuthate glass possesses high spontaneous transition probability A (65.26 s(-1)) and large 2.7 μm emission cross section σ(em) (9.53×10(-21) cm2) corresponding to the stimulated emission of Er3+:4I11/2→4I13/2 transition. The emission characteristic and energy transfer process upon excitation of a conventional 980 nm laser diode in bismuthate glass were analyzed. Additionally, the structure of bismuthate glass was analyzed by the Raman spectrum. The advantageous spectroscopic characteristics of Er3+ single-doped bismuthate glass together with the prominent thermal property indicate that bismuthate glass might become an attractive host for developing solid-state lasers around 2.7 μm.

  11. Bi-layer channel structure-based oxide thin-film transistors consisting of ZnO and Al-doped ZnO with different Al compositions and stacking sequences

    NASA Astrophysics Data System (ADS)

    Cho, Sung Woon; Yun, Myeong Gu; Ahn, Cheol Hyoun; Kim, So Hee; Cho, Hyung Koun

    2015-03-01

    Zinc oxide (ZnO)-based bi-layers, consisting of ZnO and Al-doped ZnO (AZO) layers grown by atomic layer deposition, were utilized as the channels of oxide thin-film transistors (TFTs). Thin AZO layers (5 nm) with different Al compositions (5 and 14 at. %) were deposited on top of and beneath the ZnO layers in a bi-layer channel structure. All of the bi-layer channel TFTs that included the AZO layers showed enhanced stability (Δ V Th ≤ 3.2 V) under a positive bias stress compared to the ZnO single-layer channel TFT (Δ V Th = 4.0 V). However, the AZO/ZnO bi-layer channel TFTs with an AZO interlayer between the gate dielectric and the ZnO showed a degraded field effect mobility (0.3 cm2/V·s for 5 at. % and 1.8 cm2/V·s for 14 at. %) compared to the ZnO single-layer channel TFT (5.5 cm2/V·s) due to increased scattering caused by Al-related impurities near the gate dielectric/channel interface. In contrast, the ZnO/AZO bi-layer channel TFTs with an AZO layer on top of the ZnO layer exhibited an improved field effect mobility (7.8 cm2/V·s for 14 at. %) and better stability. [Figure not available: see fulltext.

  12. Luminescence and charge carrier trapping in YPO4:Bi

    NASA Astrophysics Data System (ADS)

    Awater, Roy H. P.; Niemeijer-Berghuijs, Louise C.; Dorenbos, Pieter

    2017-04-01

    YPO4 doped with Bi3+ and/or Tb3+ samples were prepared in air. X-ray excited luminescence measurements showed emission from isolated Bi3+ and Bi-pairs, and also emission from Bi2+ was observed. Based on the obtained spectroscopic data, the electron binding energies in the ground and excited states of Bi3+ and Bi2+ were placed inside the vacuum referred binding energy (VRBE) scheme, and this was used to explain the luminescence of bismuth doped YPO4. The VRBE scheme and additional thermoluminescence glow curves show that bismuth can act both as electron and as hole trap in YPO4.

  13. Effect of different surfactants on structural and optical properties of Ce3+ and Tb3+ co-doped BiPO4 nanostructures

    NASA Astrophysics Data System (ADS)

    Lakshminarayana, G.; Dao, T. D.; Chen, K.; Sharma, Manoj; Takeda, T.; Brik, M. G.; Kityk, I. V.; Singh, Sarabjot; Nagao, T.

    2015-01-01

    In this paper we report on the Ce3+ and Tb3+ ions co-doped bismuth phosphate (BiPO4) nanostructures that were synthesized by a simple precipitation method using different surfactants such as glycerol/H2O, glycerol/ethylene glycol, oleic acid, and ethylene glycol. The structural (X-ray diffraction, scanning electron microscopy, tunneling electron microscopy), functional groups analysis (Fourier transform infrared and Raman spectroscopy), thermal (thermogravimetry and differential thermal analysis), and optical (photoluminescence, photoluminescence-excitation) properties were investigated. The structural and morphological analysis confirms the pure hexagonal crystal structure of the synthesized nanostructures. From the measured Fourier transform infrared (FTIR) and Raman spectra various functional groups such as υ3 stretching vibration of the PO4 group, and δ(O-P-O) and υ4 (PO4) vibrations including the υ2 and υ1 bending modes of the PO4 units are identified. Based on the thermal analysis, for all the studied samples an exothermic peak between 680 °C and 700 °C was observed due to phase transition from hexagonal to high temperature monoclinic. The Ce3+and Tb3+ codoped samples show spectrally broad 5d → 4f luminescence in the blue (centered at 459 nm) wavelength region under the direct optical excitation of Ce3+ at 417 nm. Similarly, Tb3+ has revealed four main emission bands (5D4 → 7F6, 5, 4 and 3) at 490 nm, 545 nm, 585 nm and 621 nm with 378 nm (7F6 → 5G6) as the excitation wavelength, including three more weak emission bands at 647 nm, 669 nm, and 681 nm which could be assigned to 5D4 → 7F2, 1, 0 emission transitions. Among them, 545 nm (5D4 → 7F5) has shown bright green emission. The Ce3+ and Tb3+ codoped sample synthesized with pure oleic acid have shown relatively high green emission intensity for Tb3+, and relatively weak blue emission intensity for Ce3+ under their respective optical excitation wavelengths.

  14. Structure and magnetic properties of nonsuperconducting doped Co and Fe Bi2Sr2Cu1-xMxOy phases

    NASA Astrophysics Data System (ADS)

    Tarascon, J. M.; Miceli, P. F.; Barboux, P.; Hwang, D. M.; Hull, G. W.; Giroud, M.; Greene, L. H.; Lepage, Yvon; McKinnon, W. R.; Tselepis, E.; Pleizier, G.; Eibschutz, M.; Neumann, D. A.; Rhyne, J. J.

    1989-06-01

    The structure and magnetic properties of the Bi2Sr2Cu1-xMxOy (M=Co and Fe) materials were studied. The limits of solid solution formation are at x=0.5 for the Fe system and x=1 for the Co system. Crystals of the new Bi2Sr2CoOY phase were grown and the structure established by x-ray crystallography. The subcell is the same as that of the 10-K superconductor, Bi2Sr2CuOy, but the superstructure is different, as it exhibits a commensurate modulation of periodicity 4 instead of 5. Extra oxygen is accommodated in the Bi layers, as in Bi2Sr3Fe2Oy, and the structure of the Bi-O layers can be described as 50% rocksalt-type and 50% oxygen-deficient perovskite for x=1, but with disorder at the oxygen positions. The formal valence of Co in this compound is about 2.5+/-0.2 as deduced from structural and chemical measurements, whereas Fe adopts the oxidation state +3 as deduced by Mössbauer measurements. Bi2Sr2CoOy is an antiferromagnetic insulator with the spins lying within the CoO2 sheets and the antiferromagnetic ordering temperature (TN) is sensitive to processing conditions and composition changes. The high anisotropy of the susceptibility suggests that Bi2Sr2CoOy may be an Ising or XY antiferromagnet.

  15. A facile ultrasonic-assisted fabrication of nitrogen-doped carbon dots/BiOBr up-conversion nanocomposites for visible light photocatalytic enhancements

    PubMed Central

    Zhang, Yifan; Park, Mira; Kim, Hak Yong; Ding, Bin; Park, Soo-Jin

    2017-01-01

    A highly efficient novel photocatalyst consisting of nitrogen-carbon dots (N-CDs) and three-dimensional (3D) hierarchical BiOBr was synthesized via a simple ultrasonic-assisted method and used for the degradation of hazardous dyes. Deposition of N-CDs onto the surface of BiOBr was confirmed through structure and composition characterizations. The N-CDs/BiOBr composites exhibited superior activity for organic contaminant degradation under visible light and the 1 wt% N-CDs/BiOBr composite showed the highest degradation rate, indicating that N-CDs/BiOBr composites have great potential for application in mitigating hazardous contaminants. The N-CDs played an important role in improving the photocatalytic performance, owing to the enhancement of up-converted photoluminescence behavior as well as the efficient separation of photogenerated charge carriers originating from the intimately contacted interface. A possible photocatalytic mechanism was proposed based on the experimental results. PMID:28327652

  16. A facile ultrasonic-assisted fabrication of nitrogen-doped carbon dots/BiOBr up-conversion nanocomposites for visible light photocatalytic enhancements.

    PubMed

    Zhang, Yifan; Park, Mira; Kim, Hak Yong; Ding, Bin; Park, Soo-Jin

    2017-03-22

    A highly efficient novel photocatalyst consisting of nitrogen-carbon dots (N-CDs) and three-dimensional (3D) hierarchical BiOBr was synthesized via a simple ultrasonic-assisted method and used for the degradation of hazardous dyes. Deposition of N-CDs onto the surface of BiOBr was confirmed through structure and composition characterizations. The N-CDs/BiOBr composites exhibited superior activity for organic contaminant degradation under visible light and the 1 wt% N-CDs/BiOBr composite showed the highest degradation rate, indicating that N-CDs/BiOBr composites have great potential for application in mitigating hazardous contaminants. The N-CDs played an important role in improving the photocatalytic performance, owing to the enhancement of up-converted photoluminescence behavior as well as the efficient separation of photogenerated charge carriers originating from the intimately contacted interface. A possible photocatalytic mechanism was proposed based on the experimental results.

  17. A facile ultrasonic-assisted fabrication of nitrogen-doped carbon dots/BiOBr up-conversion nanocomposites for visible light photocatalytic enhancements

    NASA Astrophysics Data System (ADS)

    Zhang, Yifan; Park, Mira; Kim, Hak Yong; Ding, Bin; Park, Soo-Jin

    2017-03-01

    A highly efficient novel photocatalyst consisting of nitrogen-carbon dots (N-CDs) and three-dimensional (3D) hierarchical BiOBr was synthesized via a simple ultrasonic-assisted method and used for the degradation of hazardous dyes. Deposition of N-CDs onto the surface of BiOBr was confirmed through structure and composition characterizations. The N-CDs/BiOBr composites exhibited superior activity for organic contaminant degradation under visible light and the 1 wt% N-CDs/BiOBr composite showed the highest degradation rate, indicating that N-CDs/BiOBr composites have great potential for application in mitigating hazardous contaminants. The N-CDs played an important role in improving the photocatalytic performance, owing to the enhancement of up-converted photoluminescence behavior as well as the efficient separation of photogenerated charge carriers originating from the intimately contacted interface. A possible photocatalytic mechanism was proposed based on the experimental results.

  18. Strain-tuned enhancement of ferromagnetic TC to 176 K in Sm-doped BiMnO3 thin films and determination of magnetic phase diagram

    NASA Astrophysics Data System (ADS)

    Choi, Eun-Mi; Kleibeuker, Josée E.; MacManus-Driscoll, Judith L.

    2017-03-01

    BiMnO3 is a promising multiferroic material but it’s ferromagnetic TC is well below room temperature and the magnetic phase diagram is unknown. In this work, the relationship between magnetic transition temperature (TC) and the substrate induced (pseudo-) tetragonal distortion (ratio of out-of-plane to in-plane lattice parameters, c/a) in BiMnO3 thin films, lightly doped to optimize lattice dimensions, was determined. For c/a > 0.99, hidden antiferromagnetism was revealed and the magnetisation versus temperature curves showed a tail behaviour, whereas for c/a < 0.99 clear ferromagnetism was observed. A peak TC of up to 176 K, more than 70 K higher than for bulk BiMnO3, was achieved through precise strain tuning. The TC was maximised for strong tensile in-plane strain which produced weak octahedral rotations in the out-of-plane direction, an orthorhombic-like structure, and strong ferromagnetic coupling.

  19. Strain-tuned enhancement of ferromagnetic TC to 176 K in Sm-doped BiMnO3 thin films and determination of magnetic phase diagram

    PubMed Central

    Choi, Eun-Mi; Kleibeuker, Josée E.; MacManus-Driscoll, Judith L.

    2017-01-01

    BiMnO3 is a promising multiferroic material but it’s ferromagnetic TC is well below room temperature and the magnetic phase diagram is unknown. In this work, the relationship between magnetic transition temperature (TC) and the substrate induced (pseudo-) tetragonal distortion (ratio of out-of-plane to in-plane lattice parameters, c/a) in BiMnO3 thin films, lightly doped to optimize lattice dimensions, was determined. For c/a > 0.99, hidden antiferromagnetism was revealed and the magnetisation versus temperature curves showed a tail behaviour, whereas for c/a < 0.99 clear ferromagnetism was observed. A peak TC of up to 176 K, more than 70 K higher than for bulk BiMnO3, was achieved through precise strain tuning. The TC was maximised for strong tensile in-plane strain which produced weak octahedral rotations in the out-of-plane direction, an orthorhombic-like structure, and strong ferromagnetic coupling. PMID:28256606

  20. Lattice dynamical investigations for Raman and infrared frequencies of Te doped Bi1-xTa1-xTe2xO4; 0

    PubMed

    Garg, Shaveen; Sinha, M M; Gupta, H C

    2014-09-15

    We have applied short range force constant model and used normal coordinate analysis based on G-F matrix method in investigating for Raman and infrared modes in Te doped Bi1-xTa1-xTe2xO4; 0Bi and Ta site in this compound. The role of tellurium atom is exhibiting one mode behaviour in the ternary compound Bi1-xTa1-xTe2xO4 (0

  1. Magnetism of MnBi-Based Nanomaterials

    SciTech Connect

    Kharel, P; Shah, VR; Skomski, R; Shield, JE; Sellmyer, DJ

    2013-07-01

    Nanostructured MnBi ribbons doped with impurity elements including B, C, Fe, Hf, Sm and Tb were prepared using the arc melting and melt-spinning techniques. The melt-spun ribbons were annealed in vacuum furnace at 350 degrees C to obtain the intended hexagonal structure. The external impurity doping made a significant change in the magnetic properties of the nanostructured MnBi ribbons including a decrease in saturation magnetization (M-s) and anisotropy energy (K) and an increase in coercivity H-c. However, Hf and C co-doping showed the opposite effect with a small increase in both M-s and K. Interestingly, the anisotropy energy of the boron doped sample increased by about 15% irrespective of the small decrease in magnetization. A significant increase in H-c of MnBi ribbons was found due to Hf, Tb and Sm doping. H-c as high as 13 kOe was achieved in Hf-doped sample after the sample was aligned in a magnetic field. A thermal hysteresis was observed at the structural phase transition of MnBi, which shifts by about 5 K towards higher temperatures due to impurity doping. The observed magnetic properties of the impurity doped MnBi ribbons are explained as the consequences of the disorder and the competing ferromagnetic and antiferromagnetic interactions.

  2. Colloidal CdTe Nano Crystals Synthesis and Characterization

    DTIC Science & Technology

    2008-09-01

    spectrum of CdTe nano crystals grown at different times.............................3 Figure 3. Luminescence spectrum of CdTe nano crystals after 30 and...500 600 700 800 900 1000 Wavelength in Nanometers Ab so rb an ce 15 Minutes 30 Minutes 45 Minutes 60 Minutes Figure 2. Absorption spectrum of CdTe ...nano crystals grown at different times. The luminescence spectrum of the CdTe nano crystals synthesized 30 minutes and 45 minutes after injection of

  3. Electronic tuning of the transport properties of off-stoichiometric Pb{sub x}Sn{sub 1−x}Te thermoelectric alloys by Bi{sub 2}Te{sub 3} doping

    SciTech Connect

    Guttmann, Gilad M.; Dadon, David; Gelbstein, Yaniv

    2015-08-14

    The recent energy demands affected by the dilution of conventional energy resources and the growing awareness of environmental considerations had motivated many researchers to seek for novel renewable energy conversion methods. Thermoelectric direct conversion of thermal into electrical energies is such a method, in which common compositions include IV-VI semiconducting compounds (e.g., PbTe and SnTe) and their alloys. For approaching practical thermoelectric devices, the current research is focused on electronic optimization of off-stoichiometric p-type Pb{sub x}Sn{sub 1−x}Te alloys by tuning of Bi{sub 2}Te{sub 3} doping and/or SnTe alloying levels, while avoiding the less mechanically favorable Na dopant. It was shown that upon such doping/alloying, higher ZTs, compared to those of previously reported undoped Pb{sub 0.5}Sn{sub 0.5}Te alloy, were obtained at temperatures lower than 210–340 °C, depending of the exact doping/alloying level. It was demonstrated that upon optimal grading of the carrier concentration, a maximal thermoelectric efficiency enhancement of ∼38%, compared to that of an undoped material, is expected.

  4. Synthesis and Characterization of Cu- and Co-Doped Bi4V2O11 for Intermediate-Temperature Solid Oxide Fuel Cell Electrolytes by Carbonate Coprecipitation

    NASA Astrophysics Data System (ADS)

    Lee, Jin Goo; Yoon, Hyon Hee

    2011-01-01

    Bi2MexV1-xO5.5-3x/2 (Me = Cu; 0≤x≤0.2) powders were prepared by the ammonium carbonate coprecipitation method. The starting salts were bismuth nitrate, copper nitrate, cobalt nitrate, and vanadium sulphate. The thermal decomposition of Bi2MexV1-xO5.5-3x/2 precursors was completed at about 500 °C. The crystallite structure, surface morphology, and ionic conductivity of the prepared powders and pellets were examined using X-ray diffractometry, field emission scanning electron microscopy, and an impedance analyzer, respectively. The average particle sizes of the Bi2Cu0.1V0.9O5.35 and Bi2Co0.1V0.9O5.35 powders were 10-50 nm. The tetragonal structure (γ-phase) appeared at sintering temperatures higher than 700 °C and the peak intensity increased at higher sintering temperatures. The ionic conductivities of the Bi2Cu0.1V0.9O5.35 and Bi2Co0.1V0.9O5.35 pellets sintered at 800 °C showed the highest values of 6.8×10-2 S cm-1 at 700 °C and 9.1×10-2 S cm-1 at 700 °C, respectively. The optimum concentration of the Cu and Co dopants in Bi2MexV1-xO5.5-3x/2 was determined to be 0.1. The results of this study demonstrated that the ammonium carbonate coprecipitation process could be used as an economical method for the preparation of Bi2MexV1-xO5.5-3x/2 electrolytes for intermediate-temperature solid oxide fuel cells.

  5. Effect of (Li,Ce) doping in Aurivillius phase material Na0.25K0.25Bi2.5Nb2O9

    NASA Astrophysics Data System (ADS)

    Gai, Zhi-Gang; Wang, Jin-Feng; Wang, Chun-Ming

    2007-01-01

    The effect of (Li,Ce) substitution for A site on the properties of Na0.25K0.25Bi2.5Nb2O9-based ceramics was investigated. The piezoelectric activity of Na0.25K0.25Bi2.5Nb2O9-based ceramics is significantly improved by the modification of lithium and cerium. The Curie temperature (TC) gradually increases from 668to684°C with increasing the (Li,Ce) modification. The piezoelectric coefficient d33 of the [(Na0.5K0.5)Bi]0.44(LiCe)0.03[]0.03Bi2Nb2O9 ceramic was found to be 28pC/N, the highest value among the Na0.25K0.25Bi2.5Nb2O9-based ceramics and also almost 50% higher than the reported d33 values of other bismuth layer-structured ferroelectric systems (˜5-19pC/N). The planar coupling factors kp and kt were found to be 8.0% and 23.0%, together with the high TC (˜670°C) and stable piezoelectric properties, demonstrating that the (Li,Ce) modified Na0.25K0.25Bi2.5Nb2O9-based material a promising candidate for high temperature applications.

  6. Ergodic Relaxor State with High Energy Storage Performance Induced by Doping Sr0.85Bi0.1TiO3 in Bi0.5Na0.5TiO3 Ceramics

    NASA Astrophysics Data System (ADS)

    Li, Qing-Ning; Zhou, Chong-Rong; Xu, Ji-Wen; Yang, Ling; Zhang, Xin; Zeng, Wei-Dong; Yuan, Chang-Lai; Chen, Guo-Hua; Rao, Guang-Hui

    2016-10-01

    The large maximum polarization P max and low remnant polarization P r in relaxor ferroelectrics are key features for the energy storage density ( W) and energy-storage efficiency ( η) in materials selection. In this study, the ergodic relaxor (ER) state with high energy storage performance associated with low P r and large P max, induced by Sr0.85Bi0.1TiO3(SBT) addition in (1 - x)Bi0.5Na0.5TiO3- xSr0.85Bi0.1TiO3 (BNT-SBT x with x = 0.25-0.45, Bi0.5Na0.5TiO3 abbreviated as BNT) ceramics has been observed. In particular, significantly increased energy storage density ( W = 1.5 J/cm3) and energy-storage efficiency ( η = 73%) are obtained for BNT-SBT ergodic relaxor ceramics. These results suggest a new means of designing lead-free energy-storage materials.

  7. Properties of superconducting, polycrystalline dysprosium-doped Bi{sub 1.6}Pb{sub 0.5}Sr{sub 2-x}Dy{sub x}Ca{sub 1.1}Cu{sub 2.1}O{sub 8+{delta}} (0 {<=} x {<=} 0.5)

    SciTech Connect

    Sarun, P.M.; Vinu, S.; Shabna, R.; Biju, A.; Syamaprasad, U.

    2009-05-06

    The structural and superconducting properties of dysprosium (Dy) doped (Bi,Pb)-2212 superconductor have been studied. Dy concentration is varied from x = 0.0 to 0.5 in a general stoichiometry of Bi{sub 1.6}Pb{sub 0.5}Sr{sub 2-x}Dy{sub x}Ca{sub 1.1}Cu{sub 2.1}O{sub 8+{delta}}. It is found that the Dy atoms enter into the crystal structure by replacing Sr atoms and induce significant change in lattice parameter, microstructure, hole-concentration and normal state conductivity of the system. The critical temperature (T{sub C}) and critical current density (J{sub C}) at self-field of the Dy-doped samples enhance considerably at optimum doping levels. Maximum T{sub C} of 92.3 K (for x = 0.4) and J{sub C} of 1390 A/cm{sup 2} at 64 K (for x = 0.2) are observed for doped samples as against 79.4 K and 127 A/cm{sup 2}, respectively, for the pure sample. The results are discussed on the basis of the change in hole-concentration due to Dy-doping at Sr-site of (Bi,Pb)-2212 superconductor.

  8. Aurivillius phases of PbBi{sub 4}Ti{sub 4}O{sub 15} doped with Mn{sup 3+} synthesized by molten salt technique: Structure, dielectric, and magnetic properties

    SciTech Connect

    Zulhadjri; Prijamboedi, B.; Nugroho, A.A.; Mufti, N.; Fajar, A.; Palstra, T.T.M.; Ismunandar

    2011-05-15

    Doping of manganese (Mn{sup 3+}/Mn{sup 4+}) into the Aurivillius phase Pb{sub 1-x}Bi{sub 4+x}Ti{sub 4-x}Mn{sub x}O{sub 15} was carried out using the molten salt technique for various Mn concentrations (x=0, 0.2, 0.4, 0.6, 0.8, and 1). Single phase samples could be obtained in the composition range with x up to 0.6 as confirmed by X-ray and neutron diffraction analysis. Dielectric measurements show a peak at 801, 803, 813 and 850 K for samples with x=0, 0.2, 0.4, and 0.6, respectively, related to the ferroelectric transition temperature (T{sub c}). The main contribution of the in-plane polarization for x{<=}0.2 which was calculated from the atomic positions obtained by the structure analysis is the dipole moment in the Ti(1)O{sub 6} layer; however, for x{>=}0.4 the polarization originates from the dipole moment in the Ti(2)O{sub 6} layer. Mn doping in the Pb{sub 1-x}Bi{sub 4+x}Ti{sub 4-x}Mn{sub x}O{sub 15} does not show any long range magnetic ordering. -- Graphical abstract: The dipole moment of TiO{sub 6} dependence of x in Pb{sub 1-x}Bi{sub 4+x}Ti{sub 4-x}Mn{sub x}O{sub 15} (0{<=}x{<=}0.6): (a) along a-axis and (b) on the ab plane. This figure indicated that polarization in the ab-plane contribute to the total polarization. Display Omitted Highlights: {yields} We have prepared Pb{sub 1-x}Bi{sub 4+x}Ti{sub 4-x}Mn{sub x}O{sub 15}, 0{<=}x{<=}1 by the molten-salt method. {yields} The oxides adopted A2{sub 1}am space group. {yields} Dipole moments of the inner Ti(1)O{sub 6} are the main polarization contributor for x{<=}0.2. {yields} Dipole moments of the outer Ti(2)O{sub 6} are the main polarization contributor for x>0.2. {yields} Ferromagnetic interactions show the contribution of mixed valence of Mn{sup 3+}/Mn{sup 4+}.

  9. In-situ synthesis of nanofibers with various ratios of BiOClx/BiOBry/BiOIz for effective trichloroethylene photocatalytic degradation

    NASA Astrophysics Data System (ADS)

    Zhang, Yifan; Park, Mira; Kim, Hak Yong; Ding, Bin; Park, Soo-Jin

    2016-10-01

    In this work, BiOClx/BiOBry/BiOIz (x + y + z = 1) composite nanofibers were prepared through electrospinning and the sol-gel methods. Photocatalytic degradation of trichloroethylene (TCE) by BiOClx/BiOBry/BiOIz/PAN nanofibers was systematically investigated via gas chromatography (GC). Optimum photocatalytic activity was achieved with BiOCl0.3/BiOBr0.3/BiOI0.4 fibers under solar light irradiation. X-ray photoelectron spectroscopy (XPS) peaks due to Csbnd O and Cdbnd O were observed at 286.0 and 288.3 eV, respectively, it indicated that the BiOClx/BiOBry/BiOIz mixture had been successfully doped on the polyacrylonitrile (PAN) fibers. Furthermore, X-ray diffraction (XRD) results also confirmed that we had synthesized the as-prepared composite nanofibers successfully. Photocatalytic activities of BiOCl0.3/BiOBr0.3/BiOI0.4 were up to 3 times higher than the pure BiOCl, BiOBr and BiOI samples, respectively.

  10. Electrical characterization of CdTe grain-boundary properties from as processed CdTe/CdS solar cells

    SciTech Connect

    Woods, L.M.; Robinson, G.Y.; Levi, D.H.; Ahrenkiel, R.K.; Kaydanov, V.

    1998-09-01

    An ability to liftoff or separate the thin-film polycrystalline CdTe from the CdS, without the use of chemical etches, has enabled direct electrical characterization of the as-processed CdTe near the CdTe/CdS heterointerface. The authors use this ability to understand how a back-contact, nitric-phosphoric (NP) etch affects the grain boundaries throughout the film. Quantitative determination of the grain-boundary barrier potentials and estimates of doping density near the grain perimeter are determined from theoretical fits to measurements of the current vs. temperature. Estimates of the bulk doping are determined from high-frequency resistivity measurements. The light and dark barrier potentials change after the NP etch, and the origin of this change is postulated. Also, a variable doping density within the grains of non-etched material has been determined. These results allow a semi-quantitative grain-boundary band diagram to be drawn that should aid in determining more accurate two-dimensional models for polycrystalline CdTe solar cells.

  11. Anomalous enhancement of the thermoelectric power in gallium-doped p-(Bi{sub 1-x}Sb{sub x}){sub 2}Te{sub 3} single crystals

    SciTech Connect

    Kulbachinskii, V. A. Kytin, V. G.; Tarasov, P. M.

    2010-04-15

    The effect of gallium on the temperature dependences (5 K {<=} T {<=} 300 K) of Seebeck coefficient {alpha}, electrical conductivity {sigma}, thermal conductivity k, and thermoelectric efficiency Z of mixed p-(Bi{sub 0.5}Sb{sub 0.5}){sub 2}Te{sub 3} semiconductor single crystals is studied. The hole concentration decreases upon gallium doping; that is, gallium causes a donor effect. The Seebeck coefficient increases anomalously, i.e., much higher than it should be at the detected decrease in the hole concentration. This leads to an enhancement of the thermoelectric power. The observed changes in the Seebeck coefficient indicate a noticeable gallium-induced change in the density of states in the valence band.

  12. Ferroelectric domain structures of epitaxial CaBi2Nb2O9 thin films on single crystalline Nb doped (1 0 0) SrTiO3 substrates

    NASA Astrophysics Data System (ADS)

    Ahn, Yoonho; Seo, Jeong Dae; Son, Jong Yeog

    2015-07-01

    Epitaxial CaBi2Nb2O9 (CBNO) thin films were deposited on Nb-doped SrTiO3 substrates. The CBNO thin films as a lead-free ferroelectric material exhibit a good ferroelectric property with the remanent polarization of 10.6 μC/cm2. In the fatigue resistance test, the CBNO thin films have no degradation in polarization up to 1×1012 switching cycles, which is applicable for non-volatile ferroelectric random access memories (FeRAMs). Furthermore, piezoresponse force microscopy study (PFM) reveals that the CBNO thin films have larger ferroelectric domain structures than those of PbTiO3 thin films. From the Landau, Lifshiftz, and Kittel's scaling law, it is inferred that the domain wall energy of CBNO thin films is probably very similar to that of the PbTiO3 thin films.

  13. Manifestation of light and heavy electrons in the galvanomagnetic characteristics of Te-doped n-Bi{sub 0.88}Sb{sub 0.12} single crystals

    SciTech Connect

    Tairov, B. A. Ibragimova, O. I. Rahimov, A. H.; Brazis, R.

    2011-02-15

    The components of resistivity ({rho}{sub ij}), Hall coefficient (R{sub ijk}), and magnetoresistance ({rho}{sub ij,kl}) of n-Bi{sub 0.88}Sb{sub 0.12} single crystals doped with tellurium to 0.01, 0.1, and 0.2 at % have been measured in the temperature range of 77-300 K. It is concluded that light and heavy electrons are involved in transport processes. The energy spacing between the bands of light and heavy electrons is found to be 40 meV, and the ratios of the effective masses and electron mobilities are estimated as m{sub 2}*/m{sub l}* = 3 and b Almost-Equal-To 0.16, respectively.

  14. Out-of-plane polarization induced in magnetically-doped topological insulator Bi1.37V0.03Sb0.6Te2Se by circularly polarized synchrotron radiation above a Curie temperature

    NASA Astrophysics Data System (ADS)

    Shikin, A. M.; Rybkina, A. A.; Klimovskikh, I. I.; Filianina, M. V.; Kokh, K. A.; Tereshchenko, O. E.; Skirdkov, P. N.; Zvezdin, K. A.; Zvezdin, A. K.

    2016-11-01

    By means of angle- and spin-resolved photoemission, we demonstrate a possibility of the out-of-plane spin polarization of topological surface states and corresponding lifting of the Kramers degeneracy at the Dirac point induced in magnetically-doped topological insulator Bi1.37V0.03Sb0.6Te2Se by circularly polarized synchrotron radiation (SR) at room temperature. It has been shown that the induced out-of-plane polarization is created due to an "optically"-generated uncompensated spin accumulation with transferring the induced torque to the diluted V 3d ions. We have found theoretically a relation between the imbalance in depopulation of the Dirac cone states under photoexcitation, the generation of steady-state uncompensated spin accumulation and the induced magnetization that can be managed by the polarization of SR.

  15. Impulse voltage control of continuously tunable bipolar resistive switching in Pt/Bi0.9Eu0.1FeO3/Nb-doped SrTiO3 heterostructures

    NASA Astrophysics Data System (ADS)

    Wei, Maocai; Liu, Meifeng; Wang, Xiuzhang; Li, Meiya; Zhu, Yongdan; Zhao, Meng; Zhang, Feng; Xie, Shuai; Hu, Zhongqiang; Liu, Jun-Ming

    2017-03-01

    Epitaxial Bi0.9Eu0.1FeO3 (BEFO) thin films are deposited on Nb-doped SrTiO3 (NSTO) substrates by pulsed laser deposition to fabricate the Pt/BEFO/NSTO (001) heterostructures. These heterostructures possess bipolar resistive switching, where the resistances versus writing voltage exhibits a distinct hysteresis loop and a memristive behavior with good retention and anti-fatigue characteristics. The local resistive switching is confirmed by the conductive atomic force microscopy (C-AFM), suggesting the possibility to scale down the memory cell size. The observed memristive behavior could be attributed to the ferroelectric polarization effect, which modulates the height of potential barrier and width of depletion region at the BEFO/NSTO interface. The continuously tunable resistive switching behavior could be useful to achieve non-volatile, high-density, multilevel random access memory with low energy consumption.

  16. The Study of Copper-Doped B2O3·Bi2O3 Glass Matrix by Spectroscopic Methods

    NASA Astrophysics Data System (ADS)

    Ardelean, I.; Lucacel, Raluca Ciceo; Cora, Simona

    Glasses of xCuO · (100-x)[B2O3 · Bi2O3] systems with 0≤x≤50 mol% were prepared and investigated by means of FT-IR, Raman and optical absorption spectroscopies. Complex network structures mainly built by BiO3, BiO6, BO3 and BO4 units were revealed for these glasses by means of FT-IR measurements. Similar structures were evidenced by means of Raman spectroscopy and additional new structural groups were detected in the glass structures, i.e. pyroborate, chain and ring type metaborate groups. The influence of copper-ion content (x) on the short-range order structure evolution was investigated. The optical absorption spectra for all glass samples present a single asymmetric band which corresponds to a 2B1g→2B2g transition of the of Cu2+ ions in octahedral symmetry with an elongated tetragonal distortion.

  17. High Efficiency Single Crystal CdTe Solar Cells: November 19, 2009 - January 31, 2011

    SciTech Connect

    Carmody, M.; Gilmore, A.

    2011-05-01

    The goal of the program was to develop single crystal CdTe-based top cells grown on Si solar cells as a platform for the subsequent manufacture of high efficiency tandem cells for CPV applications. The keys to both the single junction and the tandem junction cell architectures are the ability to grow high quality single-crystal CdTe and CdZnTe layers on p-type Si substrates, to dope the CdTe and CdZnTe controllably, both n and p-type, and to make low resistance ohmic front and back contacts. EPIR demonstrated the consistent MBE growth of CdTe/Si and CdZnTe/Si having high crystalline quality despite very large lattice mismatches; epitaxial CdTe/Si and CdZnTe/Si consistently showed state-of-the-art electron mobilities and good hole mobilities; bulk minority carrier recombination lifetimes of unintentionally p-doped CdTe and CdZnTe grown by MBE on Si were demonstrated to be consistently of order 100 ns or longer; desired n- and p-doping levels were achieved; solar cell series specific resistances <10 ?-cm2 were achieved; A single-junction solar cell having a state-of-the-art value of Voc and a unverified 16.4% efficiency was fabricated from CdZnTe having a 1.80 eV bandgap, ideal for the top junction in a tandem cell with a Si bottom junction.

  18. Peculiarities of excited state structure and photoluminescence in Bi(3+)-doped Lu(3)Al(5)O(12) single-crystalline films.

    PubMed

    Babin, V; Gorbenko, V; Krasnikov, A; Makhov, A; Nikl, M; Polak, K; Zazubovich, S; Zorenko, Yu

    2009-10-14

    Single-crystalline films of Lu(3)Al(5)O(12):Bi, prepared by the liquid phase epitaxy method from the melt-solution based on Bi(2)O(3) flux, have been studied at 4.2-400 K by time-resolved luminescence spectroscopy methods. Their emission spectra consist of two types of bands with strongly different characteristics. The ultraviolet emission band consists of two components, arising from the electronic transitions which correspond to the [Formula: see text] and [Formula: see text] transitions in a free Bi(3+) ion. At low temperatures, mainly the lower-energy component of this emission is observed, having the decay time∼10(-3) s at T<100 K and arising from the metastable (3)P(0) level. At T>100 K, the higher-energy emission component appears, arising from the thermally populated emitting (3)P(1) level. The visible emission spectrum consists of two dominant strongly overlapped broad bands with large Stokes shifts. At 4.2 K, their decay times are ∼10(-5) s and decrease with increasing temperature. Both of the visible emission bands are assumed to have an exciton origin. The lower-energy band is ascribed to an exciton, localized near a single Bi(3+) ion. The higher-energy band shows a stronger intensity dependence on the Bi(3+) content and is assumed to arise from an exciton localized near a dimer Bi(3+) center. The origin and structure of the corresponding excited states is considered and the processes, taking place in the excited states, are discussed.

  19. Evidence of nodes in the order parameter of the superconducting doped topological insulator NbxBi2Se3 via penetration depth measurements

    NASA Astrophysics Data System (ADS)

    Smylie, M. P.; Claus, H.; Welp, U.; Kwok, W.-K.; Qiu, Y.; Hor, Y. S.; Snezhko, A.

    2016-11-01

    The low-temperature variation of the London penetration depth λ (T ) in the candidate topological superconductor NbxBi2Se3 (x =0.25 ) is reported for several crystals. The measurements were carried out by means of a tunnel-diode oscillator technique in both field orientations (Hrf∥c and Hrf∥a b planes). All samples exhibited power-law behavior at low temperatures (Δ λ ˜T2 ) clearly indicating the presence of point nodes in the superconducting order parameter. The results presented here are consistent with a nematic odd-parity spin-triplet Eu pairing state in NbxBi2Se3 .

  20. Effect of Bi2O3 addition on electron paramagnetic resonance, optical absorption, and conductivity in vanadyl-doped Li2O-K2O-Bi2O3-B2O3 glasses.

    PubMed

    Subhadra, M; Kistaiah, P

    2011-02-17

    Glasses with composition 15Li(2)O-15K(2)O-xBi(2)O(3)-(65 - x)-B(2)O(3)/5V(2)O(5) (3 ≤ x ≤ 15) have been prepared by the conventional melt quench technique. The electron paramagnetic resonance spectra of VO(2+) in these glasses have been recorded in the X-band frequency (≈9.3 GHz) at room temperature. The spin Hamiltonian parameters and covalency rates were evaluated. It was found that the V(4+) ions exist as vanadyl (VO(2+)) ions and are in an octahedral coordination with a tetragonal compression. The covalency rates (1 - α(2)) and (1 - γ(2)) indicate moderate covalency for the σ- and π-bonds. It was observed that the spin-Hamiltonian parameters depend slightly on the relative concentration of Bi(2)O(3). The optical properties of this glass system are studied from the optical absorption spectra recorded in the wavelength range 200-800 nm. The fundamental absorption edge has been identified from the optical absorption spectra. The values of optical band gap for indirect allowed transitions have been determined using available theories. The direct current electrical conductivity, σ, has been measured in the temperature range 373-573 K. The conductivity decreases with the increase in Bi(2)O(3) concentration. This has been discussed in terms of the decrease in the number of mobile ions and their mobility. An attempt is made to correlate the EPR, optical, and electrical results and to find the effect of Bi(2)O(3) content on these parameters.

  1. Modeling the defect distribution and degradation of CdTe ultrathin films

    NASA Astrophysics Data System (ADS)

    Gorji, Nima E.

    2014-12-01

    The defect distribution across an ultrathin film CdTe layer of a CdS/CdTe solar cell is modelled by solving the balance equation in steady state. The degradation of the device parameters due to the induced defects during ion implantation is considered where the degradation rate is accelerated if the defect distribution is considerable. The defect concentration is maximum at the surface of the CdTe layer where implantation is applied and it is minimum at the junction with the CdS layer. It shows that ultrathin devices degrade faster if the defect concentration is high at the junction rather than the back region (CdTe/Metal). Since the front and back contacts of the device are close in ultrathin films and the electric field is strong to drive the defects into the junction, the p-doping process might be precisely controlled during ion implantation. The modeling results presented here are in agreement with the few available experimental reports in literature about the degradation and defect configuration of the ultrathin CdTe films.

  2. Crystal Structure, Piezoelectric and Dielectric Properties of (Li, Ce)4+, Nb5+ and Mn2+ Co-doped CaBi4Ti4O15 High-Temperature Ceramics

    NASA Astrophysics Data System (ADS)

    Xin, Deqiong; Chen, Qiang; Wu, Jiagang; Bao, Shaoming; Zhang, Wen; Xiao, Dingquan; Zhu, Jianguo

    2016-07-01

    Bismuth-layered structured ceramics Ca0.85(Li,Ce)0.075Bi4Ti4- x Nb x O15-0.01MnCO3 were prepared by the conventional solid-state reaction method. The evolution of microstructure and corresponding electrical properties were studied. All the samples presented a single bismuth layered-structural phase with m = 4, indicating that (Li, Ce)4+, Nb5+ and Mn2+ adequately enter into the pseudo-perovskite structure and form solid solutions. It was found that Ca0.85(Li,Ce)0.075Bi4Ti3.98Nb0.02O15-0.01MnCO3 (CBTLCM-0.02Nb) ceramics possess the optimum electrical properties. The piezoelectric coefficient d 33, dielectric constant ɛ r, loss tan δ, planar electromechanical coupling factor k p and Curie-temperature T C of CBTLCM-0.02Nb ceramics were found to be ˜19.6 pC/N, 160, 0.16%, 8.1% and 767°C, respectively. Furthermore, the thermal depoling behavior demonstrates that the d 33 value of x = 0.02 content remains at 16.8 pC/N after annealing at 500°C. These results suggest that the (Li, Ce)4+-, Nb5+- and Mn2+-doped CBT-based ceramics are promising candidates for high-temperature piezoelectric applications.

  3. Electric-field-temperature phase diagram of Mn-doped Bi{sub 0.5}(Na{sub 0.9}K{sub 0.1}){sub 0.5}TiO{sub 3} ceramics

    SciTech Connect

    Ehara, Yoshitaka Novak, Nikola; Yasui, Shintaro; Itoh, Mitsuru; Webber, Kyle G.

    2015-12-28

    An electric field–temperature (E-T) phase diagram for a lead-free 0.5 mol. % Mn-doped Bi(Na{sub 0.1}K{sub 0.9})TiO{sub 3} ceramics was investigated. The x-ray diffraction, dielectric and polarization measurements revealed relaxor behavior and were used to characterize the stability regions of the non-ergodic relaxor, ergodic relaxor and electric field induced ferroelectric states. As indicated by the polarization–current density profiles, transformation between two electric fields, induced ferroelectric states with opposite polarization direction arise via a two-step process through an intermediate relaxor state. Interplay between the ferroelectric state conversion and intermediate relaxor state is governed by the dynamics of polarization relaxation. The presented E-T phase diagram revealed the effects of the applied electric field and temperature on stability regions. This is of special interest since the Bi{sub 0.5}(Na{sub 0.1}K{sub 0.9}){sub 0.5}TiO{sub 3} ceramics were proposed as a potential piezoceramic material.

  4. Effect of Niobium doping on structural, thermal, sintering and electrical properties of Bi{sub 4}V{sub 1.8}Cu{sub 0.2}O{sub 10.7}

    SciTech Connect

    Alga, M.; Ammar, A.; Tanouti, B.; Outzourhit, A.; Mauvy, F. . E-mail: mauvy@icmcb-bordeaux.cnrs.fr; Decourt, R.

    2005-09-15

    Doping Bi{sub 4}V{sub 1.8}Cu{sub 0.2}O{sub 10.7} with niobium has led to the formation of the Bi{sub 4}V{sub 1.8}Cu{sub 0.2-x}Nb{sub x}O{sub 10.7+3x/2} solid solution. X-ray diffraction and thermal analysis have shown that only the compound with x=0.05 presents a tetragonal symmetry with a {gamma}{sup '} polymorph while the other compositions are of {beta} polymorph. The influence of sintering temperature on the microstructure of the samples was investigated by the scanning electron microscopy (SEM). The ceramics sintered at temperatures higher than 820{sup o}C present micro-craks. The evolution of the electrical conductivity with temperature and the degree of substitution has been investigated by impedance spectroscopy. Among all compositions studied the sample with x=0.05 presents the highest value of the conductivity.

  5. THZ Phonon Spectroscopy of Bi-2223 and Bi-2212: Evidence for Phonon Pairing

    NASA Astrophysics Data System (ADS)

    Ponomarev, Ya. G.; Van, Hoang Hoai

    Facts are presented evidencing the strong electron-phonon interaction and the scaling of a superconducting gap and a critical temperature in doped Bi-2212 single crystals. A sharp extra structure in the current-voltage characteristics (CVC's) of Bi-2212 contacts is attributed to the presence of the extended van Hove singularity (EVHS) close to the Fermi level in slightly overdoped and slightly underdoped samples. THZ phonon spectroscopy studies of Bi-2223 and Bi-2212 are overviewed. An observed giant instability in I(V) - characteristics of Bi-2223 nanosteps is probably caused by a resonant emission of 2Δ - optical phonons in a process of recombination of nonequilibrium quasiparticles (Krasnov model).

  6. Characterization of epitaxial films of CdTe and CdS grown by hot-wall epitaxy

    NASA Astrophysics Data System (ADS)

    Sitter, H.; Humenberger, J.; Huber, W.; Lopez-Otero, A.

    1983-09-01

    Layers of n-type CdTe and CdS doped with indium are grown on single-crystal BaF2 and SrF2 substrates, respectively, using the method of hot-wall epitaxy. The electron concentrations are typically up to 2 x 10 to the 17th/cu cm in CdTe and 3 x 10 to the 18th/cu cm in CdS. Mobilities of 600 sq cm/Vs for CdTe and 230 sq cm/Vs for CdS are measured at room temperature. The mobility of some of the samples is found to increase exponentially with temperature in the range from 300 to 100 K. It is noted that this effect can be explained by means of a grain boundary model. In other samples, however, bulk scattering mechanisms figure prominently for tempperatures lower than 100 K. Attention is also given to mobility as a function of grain size. Deep level transient spectroscopy measurements are made in characterizing the carrier traps in the CdTe films. Six different defect levels are found in the upper half of the forbidden gap. It is determined that the concentration of the defects and their distribution with depth away from the interface in heterojunction diodes are a function of the growth conditions.

  7. Photovoltaic properties of sintered CdS/CdTe solar cells doped with Cu

    NASA Astrophysics Data System (ADS)

    Park, J. W.; Ahn, B. T.; Im, H. B.; Kim, C. S.

    1992-11-01

    The effect of Cu doping before sintering on the photovoltaic properties of sintered CdS/CdTe solar cells were investigated by putting various amounts of CuCl2 either into the CdTe layer or into the back contact carbon layer. It was found that, as the amount of CuCl2 in the CdTe layers increased up to 25 ppm, the cell parameters of the sintered CdS/CdTe solar cells remained at about the same values, and then decreased sharply with further increase of CuCl2. The decreases in cell parameters are caused mainly by the increase in the resistivity of CdS and CdTe layer and the decrease in the optical transmission of CdS due to Cu doping from the CdTe.

  8. Emitter/absorber interface of CdTe solar cells

    SciTech Connect

    Song, Tao; Kanevce, Ana; Sites, James R.

    2016-06-17

    The performance of CdTe solar cells can be very sensitive to their emitter/absorber interfaces, especially for high-efficiency cells with improved bulk properties. When interface defect states are located at efficient recombination energies, performance losses from acceptor-type interface defects can be significant. Numerical simulations show that the emitter/absorber band alignment, the emitter doping and thickness, and the defect properties of the interface (i.e. defect density, defect type, and defect energy) can all play significant roles in the interface recombination. In particular, a type I heterojunction with small conduction-band offset (0.1 eV /= 0.4 eV), however, can impede electron transport and lead to a reduction of photocurrent and fill-factor. In contrast to the spike, a 'cliff' (.delta..EC < 0 eV) is likely to allow many holes in the vicinity of the interface, which will assist interface recombination and result in a reduced open-circuit voltage. In addition, a thin and highly-doped emitter can invert the absorber, form a large hole barrier, and decrease device performance losses due to high interface defect density. CdS is the most common emitter material used in CdTe solar cells, but the CdS/CdTe interface is in the cliff category and is not favorable from the band-offset perspective. Other n-type emitter choices, such as (Mg,Zn)O, Cd(S,O), or (Cd,Mg)Te, can be tuned by varying the elemental ratio for an optimal positive value of ..delta..EC. These materials are predicted to yield higher

  9. Emitter/absorber interface of CdTe solar cells

    NASA Astrophysics Data System (ADS)

    Song, Tao; Kanevce, Ana; Sites, James R.

    2016-06-01

    The performance of CdTe solar cells can be very sensitive to the emitter/absorber interface, especially for high-efficiency cells with high bulk lifetime. Performance losses from acceptor-type interface defects can be significant when interface defect states are located near mid-gap energies. Numerical simulations show that the emitter/absorber band alignment, the emitter doping and thickness, and the defect properties of the interface (i.e., defect density, defect type, and defect energy) can all play significant roles in the interface recombination. In particular, a type I heterojunction with small conduction-band offset (0.1 eV ≤ ΔEC ≤ 0.3 eV) can help maintain good cell efficiency in spite of high interface defect density, much like with Cu(In,Ga)Se2 (CIGS) cells. The basic principle is that positive ΔEC, often referred to as a "spike," creates an absorber inversion and hence a large hole barrier adjacent to the interface. As a result, the electron-hole recombination is suppressed due to an insufficient hole supply at the interface. A large spike (ΔEC ≥ 0.4 eV), however, can impede electron transport and lead to a reduction of photocurrent and fill-factor. In contrast to the spike, a "cliff" (ΔEC < 0 eV) allows high hole concentration in the vicinity of the interface, which will assist interface recombination and result in a reduced open-circuit voltage. Another way to mitigate performance losses due to interface defects is to use a thin and highly doped emitter, which can invert the absorber and form a large hole barrier at the interface. CdS is the most common emitter material used in CdTe solar cells, but the CdS/CdTe interface is in the cliff category and is not favorable from the band-offset perspective. The ΔEC of other n-type emitter choices, such as (Mg,Zn)O, Cd(S,O), or (Cd,Mg)Te, can be tuned by varying the elemental ratio for an optimal positive value of ΔEC. These materials are predicted to yield higher voltages and would therefore be

  10. Photoluminescence and electrical properties of Er3+-doped Na0.5Bi4.5Ti4O15—Bi4Ti3O12 inter-growth ferroelectric ceramics

    NASA Astrophysics Data System (ADS)

    Jiang, Yalin; Jiang, Xiangping; Chen, Chao; Chen, Yunjing; Jiang, Xingan; Tu, Na

    2017-03-01

    Upconversion (UC) and electrical properties of Na0.5Bi8.5- x ErxTi7O27 (NBT-BIT- xEr, 0.00⩽ x⩽0.25) ceramics were studied. Structural analysis revealed that a single inter-growth structured phase exists in all samples and the Er3+ ion substituting for Bi3+ at the A-site increases the orthorhombic distortion. Under the 980 nm laser excitation, two characteristic green emission bands and one red emission band were situated at 527, 548 and 670 nm, corresponding to the transitions 2H11/2 → 4I15/2, 4S3/2 → 4I15/2 and 4F9/2 → 4I15/2, respectively. The optimal photoluminescence (PL) were found in the NBT-BIT-0.20Er sample, and the emission color transforms from green to yellowish green. Temperature dependence of fluorescence intensity ratio (FIR) for NBT-BIT-0.20Er was measured ranging from 290 to 440 K and its maximum sensitivity was calculated to be about 0.0020 K-1 at 290 K. Dielectric measurements indicated that T C slightly increased simultaneously with the decrease of tan δ. Therefore, this ceramic has potential applications for high-temperature multifunctional devices.

  11. The Effect of Ca–Zr mole ratio on preparation, structural and magnetic properties of Ca–Zr doped Bi-YIG

    SciTech Connect

    Hasanpour, A.; Niyaifar, M.; Faridniya, N.; Amighian, J.

    2013-08-01

    Graphical abstract: - Highlights: • Ca–Zr substituted Bi-YIG has been prepared via mechanochemical processing and heat treatment. • Structural and magnetic properties were investigated. • Magnetic measurements showed the Ferrimagnetic behavior for pure garnet structure samples. • The spherical morphology of the nanoparticles was found from the SEM micrograph. - Abstract: Ca–Zr substituted (Bi-YIG) nanopowders with a nominal composition of BiY{sub 2−x}Ca{sub x}Zr{sub y}Fe{sub 5−y}O{sub 12} (x = y and x varied from 0.00 to 1.25 by the step of 0.25) were prepared by mechanochemical processing (MCP) and subsequent heat treatments. The effect of dopant mol ratios, on garnet phase formation were investigated by X-ray diffraction (XRD) and Fourier transform infrared (FT-IR) spectroscopy. The lattice constant of the samples increased by increasing Zr{sup 4+} content (for x ≤ 1). Mean crystallite size of the single-phase powders, which was evaluated by Scherrer's formula, was about 35 nm. The experimental results show that the Ca–Zr substitution Bi-YIG lowers the calcining and sintering temperatures for x < 1. The results show that the single-phase nanopowders can be obtained at temperatures below 850 °C. The measurements of vibrating sample magnetometer (VSM) show that the saturation magnetization of the samples increases as x increase from 0.00 to 0.25 and then decreases by increasing x to the values greater than 0.25.

  12. Ca-Doping of BiFeO3: The Role of Strain in Determining Coupling between Ferroelectric Displacements, Magnetic Moments, Octahedral Tilting, and Oxygen-Vacancy Ordering

    PubMed Central

    2013-01-01

    Elastic and anelastic properties of a member of the BiFeO3–CaFeO2.5 perovskite solid solution (BCFO), which is known to have multiple instabilities, have been investigated by resonant ultrasound spectroscopy. This phase, with 64% Bi and 36% Ca on the A site, is antiferromagnetic (TN ∼650 K) and has an ordered arrangement of oxygen vacancies with tetragonal lattice geometry. The inverse mechanical quality factor, Q–1, has a maximum near 100 K, correlating closely with a peak in dielectric loss, reported previously, consistent with a loss mechanism that involves the movement of oxygen vacancies accompanied by local lattice distortion. At higher temperature, there is a further acoustic loss peak that is correlated with complex impedance anomalies. There is no clear relationship to the magnetic transition, and the observations are interpreted as relating to ionic conductivity. A small stiffening, scaling with the square of the magnetic order parameter below TN, indicates that the main coupling with strain is biquadratic, confirming that conventional coupling of magnetic order with symmetry-breaking shear strains is weak in BCFO. Data from the literature for BCFO indicates that local strain fields are likely to be responsible for suppressing the spin cycloid present in BiFeO3. PMID:24489435

  13. Degradation of ultrathin CdTe films with SWCNT or Graphene back contact

    NASA Astrophysics Data System (ADS)

    Gorji, Nima E.

    2015-06-01

    The degradation of ultrathin film solar cells based on CdS/CdTe materials and back contacted with nanolayers are analysed using SCAPS. The ultrathin films suffer from uncompleted photo-absorption and fast degradation. The instability in performance was mainly attributed to the back contact materials which cause roll-over and cause mobile ions inter-diffusion. Thus, in this work, three different nanolayers such as single walled carbon nanotubes and Graphene are considered as the metal-free back contacts with wide controllable work function for the CdTe films. The simulations show that the roll-over in characteristics of the device disappears when the work function of the nanolayer increases by a proper doping. The current density-voltage curves showed promising results when the CdTe thickness was thinned down to 0.7 μm. Surface coverage of the grain boundaries at the interface of CdTe/nanolayer can reduce the contact series resistance and improve the carrier collection. However, the inter-sheet resistance of the nanolayers should be re-optimized. Finally, the time dependent approach was applied to simulate the defect generation under stress condition where the Cu-doped nanolayers showed faster degradation while the nanolayer back contacted devices showed higher stability.

  14. Recycling of CdTe photovoltaic waste

    DOEpatents

    Goozner, Robert E.; Long, Mark O.; Drinkard, Jr., William F.

    1999-01-01

    A method for extracting and reclaiming metals from scrap CdTe photovoltaic cells and manufacturing waste by leaching the waste with a leaching solution comprising nitric acid and water, skimming any plastic material from the top of the leaching solution, separating the glass substrate from the liquid leachate and electrolyzing the leachate to separate Cd from Te, wherein the Te is deposits onto a cathode while the Cd remains in solution.

  15. Thermoelectric and mechanical properties of multi-wall carbon nanotube doped Bi0.4Sb1.6Te3 thermoelectric material

    SciTech Connect

    Ren, Fei; Wang, Hsin; Menchhofer, Paul A; Kiggans, Jim

    2013-01-01

    Since many thermoelectrics are brittle in nature with low mechanical strength, improving their mechanical properties is important in fabrication of devices such as thermoelectric power generators and coolers. In this work, multiwall carbon nanotubes (CNTs) were incorporated into polycrystalline Bi0.4Sb1.6Te3 through powder processing, which increased the flexural strength from 32 MPa to 90 MPa. Electrical and thermal conductivities were both reduced in the CNT containing materials, leading to unchanged figure of merit. Dynamic Young s modulus and shear modulus of the composites were lower than the base material, which is likely related to the grain boundary scattering due to the CNTs.

  16. Structural and dielectric properties of erbium doped BiFeO{sub 3}−PbTiO{sub 3} solid solutions

    SciTech Connect

    Vandana, Singh, Anupinder Singh, Lakhwant Kaur, Anumeet; Dahyia, Sajjan; Chatterjee, Ratnamala

    2014-04-24

    Single phase Er substituted at A-site BiFeO{sub 3}−PbTiO{sub 3} solid solutions were synthesized using solid state reaction route. The calcinations at different temperature reveals that the single and pure tetragonal phase formation has been accomplished at 1000°C. The SEM micrographs did not show any distinguishable change in grain size. The dielectric studies established that the dielectric constant decreases and ferroelectric T{sub c} increases with increase in Er.

  17. Isoelectronic co-doping

    DOEpatents

    Mascarenhas, Angelo

    2004-11-09

    Isoelectronic co-doping of semiconductor compounds and alloys with deep acceptors and deep donors is used to decrease bandgap, to increase concentration of the dopant constituents in the resulting alloys, and to increase carrier mobilities lifetimes. Group III-V compounds and alloys, such as GaAs and GaP, are isoelectronically co-doped with, for example, N and Bi, to customize solar cells, thermal voltaic cells, light emitting diodes, photodetectors, and lasers on GaP, InP, GaAs, Ge, and Si substrates. Isoelectronically co-doped Group II-VI compounds and alloys are also included.

  18. Joining Chemical Pressure and Epitaxial Strain to Yield Y-doped BiFeO3 Thin Films with High Dielectric Response

    PubMed Central

    Scarisoreanu, N. D.; Craciun, F.; Birjega, R.; Ion, V.; Teodorescu, V. S.; Ghica, C.; Negrea, R.; Dinescu, M.

    2016-01-01

    BiFeO3 is one of the most promising multiferroic materials but undergoes two major drawbacks: low dielectric susceptibility and high dielectric loss. Here we report high in-plane dielectric permittivity (ε’ ∼2500) and low dielectric loss (tan δ < 0.01) obtained on Bi0.95Y0.05FeO3 films epitaxially grown on SrTiO3 (001) by pulsed laser deposition. High resolution transmission electron microscopy and geometric phase analysis evidenced nanostripe domains with alternating compressive/tensile strain and slight lattice rotations. Nanoscale mixed phase/domain ensembles are commonly found in different complex materials with giant dielectric/electromechanical (ferroelectric/ relaxors) or magnetoresistance (manganites) response. Our work brings insight into the joined role of chemical pressure and epitaxial strain on the appearance of nanoscale stripe structure which creates conditions for easy reorientation and high dielectric response, and could be of more general relevance for the field of materials science where engineered materials with huge response to external stimuli are a highly priced target. PMID:27157090

  19. Phase transformation, dielectric and magnetic properties of Nb doped Bi0.8Sr0.2FeO3 multiferroics

    NASA Astrophysics Data System (ADS)

    Reetu, Agarwal, Ashish; Sanghi, Sujata; Ashima, Ahlawat, Neetu; Monica

    2012-06-01

    Bi0.8Sr0.2Fe1-xNbxO3 (x = 0.0, 0.05, and 0.10) multiferroics were prepared by solid state reaction method. X-ray diffraction and Rietveld analysis show that crystal structure is rhombohedral for x = 0.0, 0.05 samples and triclinic for x = 0.10 sample. These samples showed dispersion in dielectric constant (έ) and dielectric loss (tan δ) values at lower frequencies. For x = 0.05 sample, both έ and tan δ are lower than for Bi0.8Sr0.2FeO3 sample indicating its high resistivity. For x = 0.10 sample, the value of έ is enhanced which may be due to formation of stronger dipoles in triclinic structure. Temperature dependence of frequency exponent "s" of power law suggests that correlated barrier hopping (CBH) model is applicable at lower temperatures and quantum mechanical tunneling model is appropriate at higher temperatures for describing the conduction mechanism in x = 0.0 and x = 0.05 samples; while in x = 0.10 sample, CBH model is appropriate in studied temperature range. Significant enhancement observed in magnetization for x = 0.10 sample is due to the structural phase transition from rhombohedral to triclinic caused by Nb substitution. For this sample, values of remnant magnetization (Mr) and coercive field (Hc) are 0.155 emu/g and 2.695 kOe, respectively.

  20. Structure and magnetic/electrochemical properties of Cu-doped BiFeO3 nanoparticles prepared by a simple solution method

    NASA Astrophysics Data System (ADS)

    Khajonrit, Jessada; Phumying, Santi; Maensiri, Santi

    2016-06-01

    BiFe1- x Cu x O3 (x = 0, 0.05, 0.1, 0.2, and 0.3) nanoparticles were prepared by a simple solution method. The prepared nanoparticles were characterized by X-ray diffraction (XRD) analysis, scanning electron microscopy (SEM), Brunauer-Emmett-Teller (BET) method analysis using the Barret-Joyner-Halenda (BJH) model, and X-ray absorption spectroscopy (XAS). Magnetization properties were obtained using a vibrating sample magnetometer (VSM) at room temperature. Magnetization was clearly enhanced by increasing Cu content and decreasing particle size. Zero-field-cooled (ZFC) and field-cooled (FC) temperature-dependent magnetization measurements showed that blocking temperature increased with increasing Cu content. Electrochemical properties were investigated by cyclic voltammetry (CV) and the galvanostatic charge-discharge (GCD) method. The performance of the fabricated supercapacitor was improved for the BiFe0.95Cu0.05O3 electrode. The highest specific capacitance was 568.13 F g-1 at 1 A g-1 and the capacity retention was 77.13% after 500 cycles.

  1. Electrocaloric effect and luminescence properties of lanthanide doped (Na{sub 1/2}Bi{sub 1/2})TiO{sub 3} lead free materials

    SciTech Connect

    Zannen, M.; Lahmar, A. E-mail: zdravko.kutnjak@ijs.si; Asbani, B.; El Marssi, M.; Khemakhem, H.; Kutnjak, Z. E-mail: zdravko.kutnjak@ijs.si; Es Souni, M.

    2015-07-20

    Polycrystalline lead-free Sodium Bismuth Titanate (NBT) ferroelectric ceramics doped with rare earth (RE) element are prepared using solid state reaction method. Optical, ferroelectric, and electrocaloric properties were investigated. The introduction of RE{sup 3+} ions in the NBT host lattice shows different light emissions over the wavelength range from visible to near infrared region. The ferroelectric P-E hysteresis loops exhibit an antiferroelectric-like character near room temperature indicating possible existence of a morphotropic phase boundary. The enhanced electrocaloric response was observed in a broad temperature range due to nearly merged phase transitions. Coexistence of optical and electrocaloric properties is very promising for photonics or optoelectronic device applications.

  2. Electrocaloric effect and luminescence properties of lanthanide doped (Na1/2Bi1/2)TiO3 lead free materials

    NASA Astrophysics Data System (ADS)

    Zannen, M.; Lahmar, A.; Asbani, B.; Khemakhem, H.; El Marssi, M.; Kutnjak, Z.; Es Souni, M.

    2015-07-01

    Polycrystalline lead-free Sodium Bismuth Titanate (NBT) ferroelectric ceramics doped with rare earth (RE) element are prepared using solid state reaction method. Optical, ferroelectric, and electrocaloric properties were investigated. The introduction of RE3+ ions in the NBT host lattice shows different light emissions over the wavelength range from visible to near infrared region. The ferroelectric P-E hysteresis loops exhibit an antiferroelectric-like character near room temperature indicating possible existence of a morphotropic phase boundary. The enhanced electrocaloric response was observed in a broad temperature range due to nearly merged phase transitions. Coexistence of optical and electrocaloric properties is very promising for photonics or optoelectronic device applications.

  3. Effect of Sr doping on the electrochemical properties of bi-functional oxygen electrode PrBa1-xSrxCo2O5+δ

    NASA Astrophysics Data System (ADS)

    Wu, Zhouling; Sun, Li-Ping; Xia, Tian; Huo, Li-Hua; Zhao, Hui; Rougier, Aline; Grenier, Jean-Claude

    2016-12-01

    Sr-doped double perovskite oxides PrBa1-xSrxCo2O5+δ (x = 0.0-1.0) are prepared and characterized by X-ray diffraction, X-ray photoelectron spectra, cyclic voltammetry and linear sweep voltammetry, respectively. Sr2+ doping is found to promote the electrocatalytic activity towards both oxygen evolution reduction and oxygen reduction reaction, due to the concentration enhancement of Co4+ (eg = 1) on the oxide surface. The PrBa0.25Sr0.75Co2O5.95 catalyst, with the highest concentration of Co4+, exhibits the superior electrocatalytic activity. The onset potential, Tafel slope and the overpotential at given current density of 10.0 mA·cmgeom-2 for the OER are 1.52 V, 75.8 mV·dec-1 and 0.42 V, respectively, comparable to the currently reported high performance OER catalysts. At the same time, the onset potential, Tafel slope, limiting current density and electron transfer number of PrBa0.25Sr0.75Co2O5.95 for ORR are 0.753 V, 58.3 mV·dec-1, 4.081 mA·cmgeom-2 and n = 3.92, respectively, implying much improved ORR activity.

  4. Dispersion of the odd magnetic resonant mode in near-optimally doped Bi{sub 2}Sr{sub 2}CaCu{sub 2}O{sub 8+{delta}}

    SciTech Connect

    Fauque, B.; Sidis, Y.; Bourges, P.; Capogna, L.; Ivanov, A.; Hradil, K.; Ulrich, C.; Keimer, B.; Rykov, A. I.

    2007-12-01

    We report a neutron scattering study of the spin excitation spectrum in the superconducting state of the slightly overdoped Bi{sub 2}Sr{sub 2}CaCu{sub 2}O{sub 8+{delta}} system (T{sub c}=87 K). We focus on the dispersion of the resonance peak in the superconducting state that is due to a S=1 collective mode. The measured spin excitation spectrum bears a strong similarity to the spectrum of the YBa{sub 2}Cu{sub 3}O{sub 6+x} system for a similar doping level (i.e., x{approx}0.95-1), which can be described as intersecting upward- and downward-dispersing branches. A close comparison of the threshold of the electron-hole spin flip continuum, known from angle resolved photoemission measurements in the same system, indicates that the magnetic response in the superconducting state is confined, in both energy and momentum, below the gapped Stoner continuum. In contrast to YBa{sub 2}Cu{sub 3}O{sub 6+x}, the spin excitation spectrum is broader than the experimental resolution. In the framework of an itinerant-electron model, we quantitatively relate this intrinsic energy width to the superconducting gap distribution observed in scanning tunneling microscopy experiments. Our study further suggests a significant in-plane anisotropy of the magnetic response.

  5. Sn-doped Bi1.1Sb0.9Te2S bulk crystal topological insulator with excellent properties

    SciTech Connect

    S. K. Kushwaha; Pletikosic, I.; Liang, T.; Gyenis, A.; Lapidus, S. H.; Tian, Y.; Zhao, H.; Burch, K. S.; Lin, Jingjing; Wang, Wudi; Ji, H.; Fedorov, A. V.; Yazdani, A.; Ong, N. P.; Valla, T.; Cava, R. J.

    2016-04-27

    A long-standing issue in topological insulator research has been to find a bulk single crystal material that provides a high quality platform for characterizing topological surface states without interference from bulk electronic states. This material would ideally be a bulk insulator, have a surface state Dirac point energy well isolated from the bulk valence and conduction bands, display quantum oscillations from the surface state electrons, and be growable as large, high quality bulk single crystals. Here we show that this materials obstacle is overcome by bulk crystals of lightly Sn-doped Bi1.1Sb0.9Te2S grown by the Vertical Bridgeman method. We characterize Sn-BSTS via angle-resolved photoemission spectroscopy, scanning tunneling microscopy, transport studies, X-ray diffraction, and Raman scattering. We present this material as a high quality topological insulator that can be reliably grown as bulk single crystals and thus studied by many researchers interested in topological surface states.

  6. Enhanced 2 μm broad-band emission and NIR to visible frequency up-conversion from Ho3+/Yb3+ co-doped Bi2O3-GeO2-ZnO glasses.

    PubMed

    Biswas, Kaushik; Sontakke, Atul D; Sen, R; Annapurna, K

    2013-08-01

    In this work, a new and non-conventional oxide glass composition based on Bi2O3-GeO2-ZnO system has been formulated with an aim to realize low phonon oxide glass and elucidate its performance when co-doped with Ho(3+)/Yb(3+) for the energy transfer based NIR emission at 2 μm from Ho(3+) ions under Yb(3+) excitation. The glass with 1.0 mol% Ho2O3 and 0.5 mol% Yb2O3 has exhibited maximum energy transfer rate (3602 s(-1)) and energy transfer efficiency (65.92%). Important radiative properties have been predicted for emission transitions of Ho(3+) ions using intensity parameters derived from measured absorption spectra using standard Judd-Ofelt theory. At lower acceptor ion concentration (0.1 mol%), an efficient NIR to visible up-conversion emission has been observed based on two photon absorption process which has found to be reduced significantly at higher Ho(3+) concentrations with simultaneous enhancement in 2 μm emission. Hence, this newly developed glass codoped with Yb(3+)/Ho(3+) is promising glass for sensitized 2 μm emission applications as broad band tunable lasers because of the combination of low phonon energy (707 cm(-1)), high energy transfer efficiency, moderately high emission cross-section (5.33×10(-21) cm(2)) and larger effective half-width of the emission band value of 169 nm.

  7. Electronic interference transport and its electron-phonon interaction in the Sb-doped Bi2Se3 nanoplates synthesized by a solvothermal method.

    PubMed

    Zhao, Bo; Chen, Taishi; Pan, Haiyang; Fei, Fucong; Han, Yuyan

    2015-11-25

    Here we synthesized the antimony doped [Formula: see text] nanoplates by the solvothermal method. The angle-dependent magnetoconductance study was carried out and all the [Formula: see text] were found to be normalized to the perpendicular field, indicating a clear 2D electronic state. The features of weak antilocalization and universal conductance fluctuations were clearly identified in the magnetoresistance transport of the 4-probe nanodevices. The dephasing lengths are extracted respectively according to the Hikami-Larkin-Nagaoka theory. It is attributed to the involvement of the dynamic spin centers. The dephasing lengths are found to increase with the decreasing temperature following a [Formula: see text] law with [Formula: see text]. This reveals the additional dephasing source of electron-phonon interaction, which is often absent for pure 2D electronic systems.

  8. Properties of doped Bi-based superconductors. Final technical report for the contract period June 1, 1997 to May 31, 2001

    SciTech Connect

    Payne, James E.

    2001-08-30

    This report summarizes the results of an extension of grant DE-FG05-93ER45493. The research goal was to have undergraduate students involved in a study of the effects of doping on the properties of BSCCO superconductors. Specifically the students investigated the effects in both bulk samples and in single crystals (whiskers). Of equal importance was the opportunity afforded minority students in a four-year institution to participate in state-of-the-art research and increase the number of students entering graduate school in science, engineering and mathematics. Over 75% of the undergraduates involved with the research enrolled in graduate school. The project in collaboration with Clemson University was able to identify and support an African American graduate student who will receive his doctorate in December of 2001.

  9. Recycling of CdTe photovoltaic waste

    DOEpatents

    Goozner, R.E.; Long, M.O.; Drinkard, W.F. Jr.

    1999-04-27

    A method for extracting and reclaiming metals from scrap CdTe photovoltaic cells and manufacturing waste by leaching the metals in dilute nitric acid, leaching the waste with a leaching solution comprising nitric acid and water, skimming any plastic material from the top of the leaching solution, separating the glass substrate from the liquid leachate, adding a calcium containing base to the leachate to precipitate Cd and Te, separating the precipitated Cd and Te from the leachate, and recovering the calcium-containing base. 3 figs.

  10. Recycling of CdTe photovoltaic waste

    DOEpatents

    Goozner, Robert E.; Long, Mark O.; Drinkard, Jr., William F.

    1999-04-27

    A method for extracting and reclaiming metals from scrap CdTe photovoltaic cells and manufacturing waste by leaching the metals in dilute nitric acid, leaching the waste with a leaching solution comprising nitric acid and water, skimming any plastic material from the top of the leaching solution, separating the glass substrate from the liquid leachate, adding a calcium containing base to the leachate to precipitate Cd and Te, separating the precipitated Cd and Te from the leachate, and recovering the calcium-containing base.

  11. Preparation and properties of evaporated CdTe films: Final subcontract report, 16 February 1985-31 March 1987

    SciTech Connect

    Bube, R H; Fahrenbruch, A L; Chien, K F

    1987-07-01

    Previous work on evaporated CdTe films for photovoltaics showed no clear path to successful p-type doping of CdTe during deposition. Post-deposition annealing of the films in various ambients thus was examined as a means of doping. Anneals were done in Te, Cd, P, and As vapors and in vacuum, air and Ar, all of which showed large effects on series resistance and diode parameters. With As, series resistance values of In/p-CdTe/graphite structures decreased markedly. This decrease was due to a decrease in grain boundary and/or back contact barrier height, and thus was due to large increases in mobility; the carrier density was not altered substantially. Although the series-resistance decreases were substantial, the diode characteristics became worse. The decreases were not observed when CdS/CdTe cells were fabricated on Te vapor-annealed films. Preparation of ZnO films by reactive evaporation yielded promising results. Deposition of p-ZnTe films by hot-wall vapor evaporation, using conventional techniques, yielded acceptable films without intentional doping.

  12. Physical properties of electron beam evaporated CdTe and CdTe:Cu thin films

    SciTech Connect

    Punitha, K.; Sivakumar, R.; Sanjeeviraja, C.; Sathe, Vasant; Ganesan, V.

    2014-12-07

    In this paper, we report on physical properties of pure and Cu doped cadmium telluride (CdTe) films deposited onto corning 7059 microscopic glass substrates by electron beam evaporation technique. X-ray diffraction study showed that all the deposited films belong to amorphous nature. The average transmittance of the films is varied between 77% and 90%. The optical energy band gap of pure CdTe film is 1.57 eV and it decreased to 1.47 eV upon 4 wt. % of Cu addition, which may be due to the extension of localized states in the band structure. The refractive index of the films was calculated using Swanepoel method. It was observed that the dispersion data obeyed the single oscillator of the Wemple-Didomenico model, from which the dispersion energy (E{sub d}) parameters, dielectric constants, plasma frequency, and oscillator energy (E{sub o}) of CdTe and CdTe:Cu films were calculated and discussed in detail with the light of possible mechanisms underlying the phenomena. The variation in intensity of photoluminescence band edge emission peak observed at 820 nm with Cu dopant is due to the change in surface state density. The observed trigonal lattice of Te peaks in the micro-Raman spectra confirms the p-type conductive nature of films, which was further corroborated by the Hall effect measurement. The lowest resistivity of 6.61 × 10{sup 4} Ω cm was obtained for the CdTe:Cu (3 wt. %) film.

  13. High Resolution Dopant Profiles Revealed by Atom Probe Tomography and STEM-EBIC for CdTe Based Solar Cells

    SciTech Connect

    Poplawsky, Jonathan D.; Li, Chen; Paudel, Naba; Guo, Wei; Yan, Yanfa; Pennycook, Stephen J.

    2016-01-01

    Segregated elements and their diffusion profiles within grain boundaries and interfaces resulting from post deposition heat treatments are revealed using atom probe tomography (APT), scanning transmission electron microscopy (STEM), and electron beam induced current (EBIC) techniques. The results demonstrate how these techniques complement each other to provide conclusive evidence for locations of space charge regions and mechanisms that create them at the nanoscale. Most importantly, a Cl dopant profile that extends ~5 nm into CdTe grains interfacing the CdS is shown using APT and STEM synergy, which has been shown to push the pn-junction into the CdTe layer indicative of a homojunction (revealed by STEM EBIC). In addition, Cu and Cl concentrations within grain boundaries within several nms and µms from the CdS/CdTe interface are compared, Na segregation of <0.1% is detected, and S variations of ~1–3% are witnessed between CdTe grains close to the CdS/CdTe interface. The segregation and diffusion of these elements directly impacts on the material properties, such as band gap energy and n/p type properties. Optimization of the interfacial and grain boundary doping will lead to higher efficiency solar cells.

  14. High Resolution Dopant Profiles Revealed by Atom Probe Tomography and STEM-EBIC for CdTe Based Solar Cells

    DOE PAGES

    Poplawsky, Jonathan D.; Li, Chen; Paudel, Naba; ...

    2016-01-01

    Segregated elements and their diffusion profiles within grain boundaries and interfaces resulting from post deposition heat treatments are revealed using atom probe tomography (APT), scanning transmission electron microscopy (STEM), and electron beam induced current (EBIC) techniques. The results demonstrate how these techniques complement each other to provide conclusive evidence for locations of space charge regions and mechanisms that create them at the nanoscale. Most importantly, a Cl dopant profile that extends ~5 nm into CdTe grains interfacing the CdS is shown using APT and STEM synergy, which has been shown to push the pn-junction into the CdTe layer indicative ofmore » a homojunction (revealed by STEM EBIC). In addition, Cu and Cl concentrations within grain boundaries within several nms and µms from the CdS/CdTe interface are compared, Na segregation of <0.1% is detected, and S variations of ~1–3% are witnessed between CdTe grains close to the CdS/CdTe interface. The segregation and diffusion of these elements directly impacts on the material properties, such as band gap energy and n/p type properties. Optimization of the interfacial and grain boundary doping will lead to higher efficiency solar cells.« less

  15. Cu Migration in Polycrystalline CdTe Solar Cells

    SciTech Connect

    Guo, Da; Akis, Richard; Brinkman, Daniel; Sankin, Igor; Fang, Tian; Vasileska, Dragica; Ringhofer, Christian

    2014-03-12

    An impurity reaction-diffusion model is applied to Cu defects and related intrinsic defects in polycrystalline CdTe for a better understanding of Cu’s role in the cell level reliability of CdTe PV devices. The simulation yields transient Cu distributions in polycrystalline CdTe during solar cell processing and stressing. Preliminary results for Cu migration using available diffusivity and solubility data show that Cu accumulates near the back contact, a phenomena that is commonly observed in devices after back-contact processing or stress conditions.

  16. Process Development for High Voc CdTe Solar Cells

    SciTech Connect

    Ferekides, C. S.; Morel, D. L.

    2011-05-01

    This is a cumulative and final report for Phases I, II and III of this NREL funded project (subcontract # XXL-5-44205-10). The main research activities of this project focused on the open-circuit voltage of the CdTe thin film solar cells. Although, thin film CdTe continues to be one of the leading materials for large-scale cost-effective production of photovoltaics, the efficiency of the CdTe solar cells have been stagnant for the last few years. This report describes and summarizes the results for this 3-year research project.

  17. A low-cost non-toxic post-growth activation step for CdTe solar cells

    NASA Astrophysics Data System (ADS)

    Major, J. D.; Treharne, R. E.; Phillips, L. J.; Durose, K.

    2014-07-01

    Cadmium telluride, CdTe, is now firmly established as the basis for the market-leading thin-film solar-cell technology. With laboratory efficiencies approaching 20 per cent, the research and development targets for CdTe are to reduce the cost of power generation further to less than half a US dollar per watt (ref. 2) and to minimize the environmental impact. A central part of the manufacturing process involves doping the polycrystalline thin-film CdTe with CdCl2. This acts to form the photovoltaic junction at the CdTe/CdS interface and to passivate the grain boundaries, making it essential in achieving high device efficiencies. However, although such doping has been almost ubiquitous since the development of this processing route over 25 years ago, CdCl2 has two severe disadvantages; it is both expensive (about 30 cents per gram) and a water-soluble source of toxic cadmium ions, presenting a risk to both operators and the environment during manufacture. Here we demonstrate that solar cells prepared using MgCl2, which is non-toxic and costs less than a cent per gram, have efficiencies (around 13%) identical to those of a CdCl2-processed control group. They have similar hole densities in the active layer (9 × 1014 cm-3) and comparable impurity profiles for Cl and O, these elements being important p-type dopants for CdTe thin films. Contrary to expectation, CdCl2-processed and MgCl2-processed solar cells contain similar concentrations of Mg; this is because of Mg out-diffusion from the soda-lime glass substrates and is not disadvantageous to device performance. However, treatment with other low-cost chlorides such as NaCl, KCl and MnCl2 leads to the introduction of electrically active impurities that do compromise device performance. Our results demonstrate that CdCl2 may simply be replaced directly with MgCl2 in the existing fabrication process, thus both minimizing the environmental risk and reducing the cost of CdTe solar-cell production.

  18. Stacking faults and lamellar twins with intrinsic point defects in poly-crystalline CdTe analyzed by density functional theory

    NASA Astrophysics Data System (ADS)

    Buurma, Christopher; Chan, Maria; Pauluaskas, Tadas; Klie, Robert; Sivananthan, Sivalingam; DOE Bridge Project Collaboration

    2014-03-01

    Polycrystalline CdTe is a prominent photovoltaic material with proven industry success. To develop the next generation of thin film CdTe solar cells, higher open-circuit voltages and longer minority carrier lifetimes must be achieved. Playing a major role in doping, defect migration, recombination, and current transport are grain boundaries and other extended defects within grains of poly-crystalline CdTe. Commonly observed with STEM in CdTe are twins and stacking faults that extend throughout the entire grain. These twins can appear as lamellar repeating twins, or as single column stacking faults occurring in repetition near that of a Wurtzite structure. In this talk, we will use first principles density functional theory to investigate the thermodynamics and electronic structures such structures observed in STEM. The interaction energetics between adjacent twins and sets of twins are investigated. We will also investigate the likelihood of formation of neutral and charged native point defects in and near these extended defect structures. Binding energies of multiple point defects near such structures are also revealed. Implications towards PV efficiencies are discussed.

  19. Preparation of p-type NiO films by reactive sputtering and their application to CdTe solar cells

    NASA Astrophysics Data System (ADS)

    Ishikawa, Ryousuke; Furuya, Yasuaki; Araki, Ryouichi; Nomoto, Takahiro; Ogawa, Yohei; Hosono, Aikyo; Okamoto, Tamotsu; Tsuboi, Nozomu

    2016-02-01

    Transparent p-type NiO films were prepared by reactive sputtering using the facing-target system under Ar-diluted O2 gas at Tsub of 30 and 200 °C. The increasing intensity of dominant X-ray diffraction (XRD) peaks indicates improvements in the crystallinity of NiO films upon Cu doping. In spite of the crystallographic and optical changes after Cu-doping, the electrical properties of Cu-doped NiO films were slightly improved. Upon Ag-doping at 30 °C under low O2 concentration, on the other hand, the intensity of the dominant (111) XRD peaks was suppressed and p-type conductivity increased from ˜10-3 to ˜10-1 S cm-1. Finally, our Ag-doped NiO films were applied as the back contact of CdTe solar cells. CdTe solar cells with a glass/ITO/CdS/CdTe/NiO structure exhibited an efficiency of 6.4%, suggesting the high potential of using p-type NiO for the back-contact film in thin-film solar cells.

  20. Dielectric relaxation and Maxwell-Wagner interface polarization in Nb2O5 doped 0.65BiFeO3-0.35BaTiO3 ceramics

    NASA Astrophysics Data System (ADS)

    Wang, Tong; Hu, Jiacong; Yang, Haibo; Jin, Li; Wei, Xiaoyong; Li, Chunchun; Yan, Fei; Lin, Ying

    2017-02-01

    Electrical characterizations of Nb2O5 doped 0.65BiFeO3-0.35BaTiO3 (0.65BF-0.35BT) ceramic were carried out over broad temperature and frequency ranges through dielectric spectroscopy, impedance spectroscopy, and ac conductivity measurements. The dielectric constant and loss tangent are drastically reduced with introducing Nb2O5 into the 0.65BF-0.35BT system. Two dielectric anomalies are detected in the temperature regions of 100 °C ≤ T ≤ 280 °C and 350 °C ≤ T ≤ 480 °C, and the Curie temperature (TC) was confirmed in higher temperature region. A dielectric relaxation with large dielectric constants was detected near the TC. This dielectric relaxation becomes even stronger with the gradual increase in the Nb2O5 content. Impedance spectroscopy results clearly show the contributions of grains and grain boundaries in the frequency range of 100 Hz ≤ f ≤ 1 MHz, and the relaxation processes for grains and grain boundaries are non-Debye-type. The grain boundaries are more resistive than that of the grains, revealing the inhomogeneity in samples. The experimental results are well fitted based on a Maxwell-Wagner (MW) interfacial polarization model below 100 kHz, and the MW interfacial polarization effect becomes more and more obvious with the increase in the Nb2O5 content. The increase in dielectric constant is possibly related to space charge polarization, which is caused by charges accumulated at the interface between the grain and grain boundaries. Frequency dependence of the ac conductivity confirms the MW interfacial polarization effect below 100 kHz.