Modeling Thin Film Oxide Growth

NASA Astrophysics Data System (ADS)

Sherman, Quentin

Thin film oxidation is investigated using two modeling techniques in the interest of better understanding the roles of space charge and non-equilibrium effects. An electrochemical phase-field model of an oxide-metal interface is formulated in one dimension and studied at equilibrium and during growth. An analogous sharp interface model is developed to validate the phase-field model in the thick film limit. Electrochemical profiles across the oxide are shown to deviate from the sharp interface prediction when the oxide film is thin compared to the Debye length, however no effect on the oxidation kinetics is found. This is attributed to the simple thermodynamic and kinetic models used therein. The phase-field model provides a framework onto to which additional physics can be added to better model thin film oxidation. A model for solute trapping during the oxidation of binary alloys is developed to study non-equilibrium effects during the early stages of oxide growth. The model is applied to NiCr alloys, and steady-state interfacial composition maps are presented for the growth of an oxide with the rock salt structure. No detailed experimental data is available to verify the predictions of the solute trapping model, however it is shown to be consistent with the trends observed during the early stages of NiCr oxidation. Lastly, experimental studies of the wet infiltration technique for decorating solid oxide fuel cell anodes with nickel nanoparticles are presented. The effect of nickel nitrate calcination parameters on the resulting nickel oxide microstructures are studied on both porous and planar substrates. Decreasing the calcination temperature and dwell time, as well as a dehydration step after nickel nitrate infiltration, are all shown to decrease the initial nickel oxide particle size, but other factors such as geometry and nickel loading per unit area also affected the final nickel particle size and morphology upon reduction.

Metal Composition and Polyethylenimine Doping Capacity Effects on Semiconducting Metal Oxide-Polymer Blend Charge Transport.

PubMed

Huang, Wei; Guo, Peijun; Zeng, Li; Li, Ran; Wang, Binghao; Wang, Gang; Zhang, Xinan; Chang, Robert P H; Yu, Junsheng; Bedzyk, Michael J; Marks, Tobin J; Facchetti, Antonio

2018-04-25

Charge transport and film microstructure evolution are investigated in a series of polyethylenimine (PEI)-doped (0.0-6.0 wt%) amorphous metal oxide (MO) semiconductor thin film blends. Here, PEI doping generality is broadened from binary In 2 O 3 to ternary (e.g., In+Zn in IZO, In+Ga in IGO) and quaternary (e.g., In+Zn+Ga in IGZO) systems, demonstrating the universality of this approach for polymer electron doping of MO matrices. Systematic comparison of the effects of various metal ions on the electronic transport and film microstructure of these blends are investigated by combined thin-film transistor (TFT) response, AFM, XPS, XRD, X-ray reflectivity, and cross-sectional TEM. Morphological analysis reveals that layered MO film microstructures predominate in PEI-In 2 O 3 , but become less distinct in IGO and are not detectable in IZO and IGZO. TFT charge transport measurements indicate a general coincidence of a peak in carrier mobility (μ peak ) and overall TFT performance at optimal PEI doping concentrations. Optimal PEI loadings that yield μ peak values depend not only on the MO elemental composition but also, equally important, on the metal atomic ratios. By investigating the relationship between the MO energy levels and PEI doping by UPS, it is concluded that the efficiency of PEI electron-donation is highly dependent on the metal oxide matrix work function in cases where film morphology is optimal, as in the IGO compositions. The results of this investigation demonstrate the broad generality and efficacy of PEI electron doping applied to electronically functional metal oxide systems and that the resulting film microstructure, morphology, and energy level modifications are all vital to understanding charge transport in these amorphous oxide blends.

Forming-free colossal resistive switching effect in rare-earth-oxide Gd2O3 films for memristor applications

NASA Astrophysics Data System (ADS)

Cao, Xun; Li, Xiaomin; Gao, Xiangdong; Yu, Weidong; Liu, Xinjun; Zhang, Yiwen; Chen, Lidong; Cheng, Xinhong

2009-10-01

The reproducible forming-free resistive switching (RS) behavior in rare-earth-oxide Gd2O3 polycrystalline thin film was demonstrated. The characteristic of this forming-free RS was similar to that of other forming-necessary binary RS materials except that its initial resistance starts from not the high resistance state (HRS) but the low resistance state (LRS). An ultrahigh resistance switching ratio from HRS to LRS of about six to seven orders of magnitude was achieved at a bias voltage of 0.6 V. Mechanism analysis indicated that the existence of metallic Gd in the Gd2O3 films plays an important role in the forming-free RS performance. Our work provides a novel material with interesting RS behavior, which is beneficial to deepen our understanding of the origin of RS phenomenon.

Compositional Dependence of Optical and Structural Properties of Nanogranular Mixed ZrO2/ZnO/SnO2 Thin Film

NASA Astrophysics Data System (ADS)

Salari, S.; Ghodsi, F. E.

2018-06-01

A study on the optical properties and photoluminescence (PL) spectra of ternary oxide nanogranular thin films comprising Zr, Zn, and Sn revealed that the change in component ratio could direct the roadmap to improve characteristics of the films. Grazing angle X-ray diffraction analysis showed that incorporation of Sn atoms into the tetragonal structure of Zn/Zr thin film resulted in an amorphous structure. The band gap of film was tunable by precisely controlling the concentration of components. The widening of band gap could correlate to the quantum confinement effect. PL spectra of the composite thin films under excitation at 365 nm showed a sharp red emission with relatively Gaussian line shape, which was intensified in the optimum percentage ratio of 50/30/20. This nearly red emission is attributed to the radiative emission of electrons captured at low-energy traps located near the valence band. An optimum red emission is strongly desirable for use in white LEDs. The comparative study on FTIR spectra of unary, binary, and ternary thin films confirmed successful composition of three different metal oxides in ternary thin films. Detailed investigation on FTIR spectra of ternary compounds revealed that the quenching in PL emission at higher percentage of Sn was originally due to the hydroxyl group.

Direct observation of pure pentavalent uranium in U2O5 thin films by high resolution photoemission spectroscopy.

PubMed

Gouder, T; Eloirdi, R; Caciuffo, R

2018-05-29

Thin films of the elusive intermediate uranium oxide U 2 O 5 have been prepared by exposing UO 3 precursor multilayers to atomic hydrogen. Electron photoemission spectra measured about the uranium 4f core-level doublet contain sharp satellites separated by 7.9(1) eV from the 4f main lines, whilst satellites characteristics of the U(IV) and U(VI) oxidation states, expected respectively at 6.9(1) and 9.7(1) eV from the main 4f lines, are absent. This shows that uranium ions in the films are in a pure pentavalent oxidation state, in contrast to previous investigations of binary oxides claiming that U(V) occurs only as a metastable intermediate state coexisting with U(IV) and U(VI) species. The ratio between the 5f valence band and 4f core-level uranium photoemission intensities decreases by about 50% from UO 2 to U 2 O 5 , which is consistent with the 5f  2 (UO 2 ) and 5f  1 (U 2 O 5 ) electronic configurations of the initial state. Our studies conclusively establish the stability of uranium pentoxide.

Binary grafted chitosan film: Synthesis, characterization, antibacterial activity and prospects for food packaging.

PubMed

Kumar, Deepak; Kumar, Pramendra; Pandey, Jyoti

2018-04-17

The antimicrobial binary grafted chitosan film [chit-g-Poly (An-co-Am)] was prepared by grafting of acrylonitrile and acrylamide on to chitosan via microwave initiated graft copolymerization. The grafting of acrylonitrile and acrylamide onto chitosan backbone was confirmed by FTIR, XRD, SEM and TGA/DTA/DTG analytical techniques. The binary grafted chitosan film possessed efficient antimicrobial activity against three tested strains, i.e. Escherichia coli, Staphylococcus aureus and Pseudomonas aeruginosa. The prepared binary grafted chitosan film was tested for packaging apple and guava to prevent microbial infection and extend their shelf life. The biodegradability study of binary grafted chitosan film was also done and all the results were positive. Copyright © 2018. Published by Elsevier B.V.

Hardware Modifications to the US Army Research Laboratory’s Metalorganic Chemical Vapor Deposition (MOCVD) System for Optimization of Complex Oxide Thin Film Fabrication

DTIC Science & Technology

2015-04-01

studies on flow and thermal fields in MOCVD reactor. Chinese Science Bulletin. 2010;55:560–566. 36. Hampdensmith MJ, Kodas TT. Chemical vapor...Chemistry. 1995;19727–750. 47. Xu CY, Hampdensmith MJ, Kodas TT. Aerosol-assisted chemical-vapor- deposition (AACVD) of binary alloy (AGXPD1-X, CUXPD1-X

Photoexcited Carrier Dynamics of Cu 2S Thin Films

DOE PAGES

Riha, Shannon C.; Schaller, Richard D.; Gosztola, David J.; ...

2014-11-11

Copper sulfide is a simple binary material with promising attributes for low-cost thin film photovoltaics. However, stable Cu 2S-based device efficiencies approaching 10% free from cadmium have yet to be realized. In this paper, transient absorption spectroscopy is used to investigate the dynamics of the photoexcited state of isolated Cu 2S thin films prepared by atomic layer deposition or vapor-based cation exchange of ZnS. While a number of variables including film thickness, carrier concentration, surface oxidation, and grain boundary passivation were examined, grain structure alone was found to correlate with longer lifetimes. A map of excited state dynamics is deducedmore » from the spectral evolution from 300 fs to 300 μs. Finally, revealing the effects of grain morphology on the photophysical properties of Cu 2S is a crucial step toward reaching high efficiencies in operationally stable Cu 2S thin film photovoltaics.« less

Surface microstructures and corrosion resistance of Ni-Ti-Nb shape memory thin films

NASA Astrophysics Data System (ADS)

Li, Kun; Li, Yan; Huang, Xu; Gibson, Des; Zheng, Yang; Liu, Jiao; Sun, Lu; Fu, Yong Qing

2017-08-01

Ni-Ti-Nb and Ni-Ti shape memory thin films were sputter-deposited onto silicon substrates and annealed at 600 °C for crystallization. X-ray diffraction (XRD) measurements indicated that all of the annealed Ni-Ti-Nb films were composed of crystalline Ni-Ti (Nb) and Nb-rich grains. X-ray photoelectron spectroscopy (XPS) tests showed that the surfaces of Ni-Ti-Nb films were covered with Ti oxides, NiO and Nb2O5. The corrosion resistance of the Ni-Ti-Nb films in 3.5 wt.% NaCl solution was investigated using electrochemical tests such as open-circuit potential (OCP) and potentio-dynamic polarization tests. Ni-Ti-Nb films showed higher OCPs, higher corrosion potentials (Ecorr) and lower corrosion current densities (icorr) than the binary Ni-Ti film, which indicated a better corrosion resistance. The reason may be that Nb additions modified the passive layer on the film surface. The OCPs of Ni-Ti-Nb films increased with further Nb additions, whereas no apparent difference of Ecorr and icorr was found among the Ni-Ti-Nb films.

Disorder-to-order transitions induced by alkyne/azide click chemistry in diblock copolymer thin films.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wei, X.; Gu, W.; Chen, W.

2012-01-01

We investigated thin film morphologies of binary blends of alkyne-functionalized diblock copolymer poly(ethylene oxide)-block-poly(n-butyl methacrylate-random-propargyl methacrylate) (PEO-b-P(nBMA-r-PgMA)) and Rhodamine B azide, where the thermal alkyne/azide click reaction between the two components induced a disorder-to-order transition (DOT) of the copolymer. By controlling the composition of the neat copolymers and the mole ratio between the alkyne and azide groups, different microphase separated morphologies were achieved. At higher azide loading ratios, a perpendicular orientation of the microdomains was observed with wide accessible film thickness window. As less azide was incorporated, the microdomains have a stronger tendency to be parallel to the substrate, andmore » the film thickness window for perpendicular orientation also became narrower.« less

Micro- and Nanostructured Metal Oxide Chemical Sensors for Volatile Organic Compounds

NASA Technical Reports Server (NTRS)

Alim, M. A.; Penn, B. G.; Currie, J. R., Jr.; Batra, A. K.; Aggarwal, M. D.

2008-01-01

Aeronautic and space applications warrant the development of chemical sensors which operate in a variety of environments. This technical memorandum incorporates various kinds of chemical sensors and ways to improve their performance. The results of exploratory investigation of the binary composite polycrystalline thick-films such as SnO2-WO3, SnO2-In2O3, SnO2-ZnO for the detection of volatile organic compound (isopropanol) are reported. A short review of the present status of the new types of nanostructured sensors such as nanobelts, nanorods, nanotube, etc. based on metal oxides is presented.

Ferroelectricity emerging in strained (111)-textured ZrO{sub 2} thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fan, Zhen, E-mail: a0082709@u.nus.edu, E-mail: msecj@nus.edu.sg; Deng, Jinyu; Liu, Ziyan

2016-01-04

(Anti-)ferroelectricity in complementary metal-oxide-semiconductor (CMOS)-compatible binary oxides have attracted considerable research interest recently. Here, we show that by using substrate-induced strain, the orthorhombic phase and the desired ferroelectricity could be achieved in ZrO{sub 2} thin films. Our theoretical analyses suggest that the strain imposed on the ZrO{sub 2} (111) film by the TiN/MgO (001) substrate would energetically favor the tetragonal (t) and orthorhombic (o) phases over the monoclinic (m) phase of ZrO{sub 2}, and the compressive strain along certain 〈11-2〉 directions may further stabilize the o-phase. Experimentally ZrO{sub 2} thin films are sputtered onto the MgO (001) substrates buffered bymore » epitaxial TiN layers. ZrO{sub 2} thin films exhibit t- and o-phases, which are highly (111)-textured and strained, as evidenced by X-ray diffraction and transmission electron microscopy. Both polarization-electric field (P-E) loops and corresponding current responses to voltage stimulations measured with appropriate applied fields reveal the ferroelectric sub-loop behavior of the ZrO{sub 2} films at certain thicknesses, confirming that the ferroelectric o-phase has been developed in the strained (111)-textured ZrO{sub 2} films. However, further increasing the applied field leads to the disappearance of ferroelectric hysteresis, the possible reasons of which are discussed.« less

Enhancing Performance of Large-Area Organic Solar Cells with Thick Film via Ternary Strategy.

PubMed

Zhang, Jianqi; Zhao, Yifan; Fang, Jin; Yuan, Liu; Xia, Benzheng; Wang, Guodong; Wang, Zaiyu; Zhang, Yajie; Ma, Wei; Yan, Wei; Su, Wenming; Wei, Zhixiang

2017-06-01

Large-scale fabrication of organic solar cells requires an active layer with high thickness tolerability and the use of environment-friendly solvents. Thick films with high-performance can be achieved via a ternary strategy studied herein. The ternary system consists of one polymer donor, one small molecule donor, and one fullerene acceptor. The small molecule enhances the crystallinity and face-on orientation of the active layer, leading to improved thickness tolerability compared with that of a polymer-fullerene binary system. An active layer with 270 nm thickness exhibits an average power conversion efficiency (PCE) of 10.78%, while the PCE is less than 8% with such thick film for binary system. Furthermore, large-area devices are successfully fabricated using polyethylene terephthalate (PET)/Silver gride or indium tin oxide (ITO)-based transparent flexible substrates. The product shows a high PCE of 8.28% with an area of 1.25 cm 2 for a single cell and 5.18% for a 20 cm 2 module. This study demonstrates that ternary organic solar cells exhibit great potential for large-scale fabrication and future applications. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lu, Cimang, E-mail: cimang@adam.t.u-tokyo.ac.jp; Lee, Choong Hyun; Nishimura, Tomonori

We investigated yttrium scandate (YScO{sub 3}) as an alternative high-permittivity (k) dielectric thin film for Ge gate stack formation. Significant enhancement of k-value is reported in YScO{sub 3} comparing to both of its binary compounds, Y{sub 2}O{sub 3} and Sc{sub 2}O{sub 3}, without any cost of interface properties. It suggests a feasible approach to a design of promising high-k dielectrics for Ge gate stack, namely, the formation of high-k ternary oxide out of two medium-k binary oxides. Aggressive scaling of equivalent oxide thickness (EOT) with promising interface properties is presented by using YScO{sub 3} as high-k dielectric and yttrium-doped GeO{submore » 2} (Y-GeO{sub 2}) as interfacial layer, for a demonstration of high-k gate stack on Ge. In addition, we demonstrate Ge n-MOSFET performance showing the peak electron mobility over 1000 cm{sup 2}/V s in sub-nm EOT region by YScO{sub 3}/Y-GeO{sub 2}/Ge gate stack.« less

Effects of Processing Variables on Tantalum Nitride by Reactive-Ion-Assisted Magnetron Sputtering Deposition

NASA Astrophysics Data System (ADS)

Wei, Chao‑Tsang; Shieh, Han‑Ping D.

2006-08-01

The binary compound tantalum nitride (TaN) and ternary compounds tantalum tungsten nitrides (Ta1-xWxNy) exhibit interesting properties such as high melting point, high hardness, and chemical inertness. Such nitrides were deposited on a tungsten carbide (WC) die and silicon wafers by ion-beam-sputter evaporation of the respective metal under nitrogen ion-assisted deposition (IAD). The effects of N2/Ar flux ratio, post annealing, ion-assisted deposition, deposition rate, and W doping in coating processing variables on hardness, load critical scratching, oxidation resistance, stress and surface roughness were investigated. The optimum N2/Ar flux ratios in view of the hardness and critical load of TaN and Ta1-xWxNy films were ranged from 0.9 to 1.0. Doping W into TaN to form Ta1-xWxNy films led significant increases in hardness, critical load, oxidation resistance, and reduced surface roughness. The optimum doping ratio was [W/(W+Ta)]=0.85. From the deposition rate and IAD experiments, the stress in the films is mainly contributed by sputtering atoms. The lower deposition rate at a high N2/Ar flux ratio resulted in a higher compressive stress. A high compressive residual stress accounts for a high hardness. The relatively high compressive stress was attributed primarily to peening by atoms, ions and electrons during film growth, the Ta1-xWxNy films showed excellent hardness and strength against a high temperature, and sticking phenomena can essentially be avoided through their use. Ta1-xWxNy films showed better performance than the TaN film in terms of mechanical properties and oxidation resistance.

Deposition and characterization of silicon thin-films by aluminum-induced crystallization

NASA Astrophysics Data System (ADS)

Ebil, Ozgenc

Polycrystalline silicon (poly-Si) as a thin-film solar cell material could have major advantages compared to non-silicon thin-film technologies. In theory, thin-film poly-Si may retain the performance and stability of c-Si while taking advantage of established manufacturing techniques. However, poly-Si films deposited onto foreign substrates at low temperatures typically have an average grain size of 10--50 nm. Such a grain structure presents a potential problem for device performance since it introduces an excessive number of grain boundaries which, if left unpassivated, lead to poor solar cell properties. Therefore, for optimum device performance, the grain size of the poly-Si film should be at least comparable to the thickness of the films. For this project, the objectives were the deposition of poly-Si thin-films with 2--5 mum grain size on glass substrates using in-situ and conventional aluminum-induced crystallization (AIC) and the development of a model for AIC process. In-situ AIC experiments were performed using Hot-Wire Chemical Vapor Deposition (HWCVD) both above and below the eutectic temperature (577°C) of Si-Al binary system. Conventional AIC experiments were performed using a-Si layers deposited on aluminum coated glass substrates by Electron-beam deposition, Plasma Enhanced Chemical Vapor Deposition (PECVD) and HWCVD. Continuous poly-Si films with an average grain size of 10 mum on glass substrates were achieved by both in-situ and conventional aluminum-induced crystallization of Si below eutectic temperature. The grain size was determined by three factors; the grain structure of Al layer, the nature of the interfacial oxide, and crystallization temperature. The interface oxide was found to be crucial for AIC process but not necessary for crystallization itself. The characterization of interfacial oxide layer formed on Al films revealed a bilayer structure containing Al2O3 and Al(OH)3 . The effective activation energy for AIC process was determined to be 0.9 eV and depended on the nature of the interfacial oxide layer. Poly-Si layers prepared by AIC technique can be used as seed layers for epitaxial growth of bulk Si layer or as back contacts in c-Si based solar cells.

A Polar Corundum Oxide Displaying Weak Ferromagnetism at Room Temperature

PubMed Central

2012-01-01

Combining long-range magnetic order with polarity in the same structure is a prerequisite for the design of (magnetoelectric) multiferroic materials. There are now several demonstrated strategies to achieve this goal, but retaining magnetic order above room temperature remains a difficult target. Iron oxides in the +3 oxidation state have high magnetic ordering temperatures due to the size of the coupled moments. Here we prepare and characterize ScFeO3 (SFO), which under pressure and in strain-stabilized thin films adopts a polar variant of the corundum structure, one of the archetypal binary oxide structures. Polar corundum ScFeO3 has a weak ferromagnetic ground state below 356 K—this is in contrast to the purely antiferromagnetic ground state adopted by the well-studied ferroelectric BiFeO3. PMID:22280499

Electrochemical synthesis of mesoporous Pt-Au binary alloys with tunable compositions for enhancement of electrochemical performance.

PubMed

Yamauchi, Yusuke; Tonegawa, Akihisa; Komatsu, Masaki; Wang, Hongjing; Wang, Liang; Nemoto, Yoshihiro; Suzuki, Norihiro; Kuroda, Kazuyuki

2012-03-21

Mesoporous Pt-Au binary alloys were electrochemically synthesized from lyotropic liquid crystals (LLCs) containing corresponding metal species. Two-dimensional exagonally ordered LLC templates were prepared on conductive substrates from diluted surfactant solutions including water, a nonionic surfactant, ethanol, and metal species by drop-coating. Electrochemical synthesis using such LLC templates enabled the preparation of ordered mesoporous Pt-Au binary alloys without phase segregation. The framework composition in the mesoporous Pt-Au alloy was controlled simply by changing the compositional ratios in the precursor solution. Mesoporous Pt-Au alloys with low Au content exhibited well-ordered 2D hexagonal mesostructures, reflecting those of the original templates. With increasing Au content, however, the mesostructural order gradually decreased, thereby reducing the electrochemically active surface area. Wide-angle X-ray diffraction profiles, X-ray photoelectron spectra, and elemental mapping showed that both Pt and Au were atomically distributed in the frameworks. The electrochemical stability of mesoporous Pt-Au alloys toward methanol oxidation was highly improved relative to that of nonporous Pt and mesoporous Pt films, suggesting that mesoporous Pt-Au alloy films are potentially applicable as electrocatalysts for direct methanol fuel cells. Also, mesoporous Pt-Au alloy electrodes showed a highly sensitive amperometric response for glucose molecules, which will be useful in next-generation enzyme-free glucose sensors.

Memory switches based on metal oxide thin films

NASA Technical Reports Server (NTRS)

Ramesham, Rajeshuni (Inventor); Thakoor, Anilkumar P. (Inventor); Lambe, John J. (Inventor)

1990-01-01

MnO.sub.2-x thin films (12) exhibit irreversible memory switching (28) with an OFF/ON resistance ratio of at least about 10.sup.3 and the tailorability of ON state (20) resistance. Such films are potentially extremely useful as a connection element in a variety of microelectronic circuits and arrays (24). Such films provide a pre-tailored, finite, non-volatile resistive element at a desired place in an electric circuit, which can be electrically turned OFF (22) or disconnected as desired, by application of an electrical pulse. Microswitch structures (10) constitute the thin film element, contacted by a pair of separate electrodes (16a, 16b) and have a finite, pre-selected ON resistance which is ideally suited, for example, as a programmable binary synaptic connection for electronic implementation of neural network architectures. The MnO.sub.2-x microswitch is non-volatile, patternable, insensitive to ultraviolet light, and adherent to a variety of insulating substrates (14), such as glass and silicon dioxide-coated silicon substrates.

Neural network based feed-forward high density associative memory

NASA Technical Reports Server (NTRS)

Daud, T.; Moopenn, A.; Lamb, J. L.; Ramesham, R.; Thakoor, A. P.

1987-01-01

A novel thin film approach to neural-network-based high-density associative memory is described. The information is stored locally in a memory matrix of passive, nonvolatile, binary connection elements with a potential to achieve a storage density of 10 to the 9th bits/sq cm. Microswitches based on memory switching in thin film hydrogenated amorphous silicon, and alternatively in manganese oxide, have been used as programmable read-only memory elements. Low-energy switching has been ascertained in both these materials. Fabrication and testing of memory matrix is described. High-speed associative recall approaching 10 to the 7th bits/sec and high storage capacity in such a connection matrix memory system is also described.

Atomic layer deposited lithium aluminum oxide: (In)dependency of film properties from pulsing sequence

DOE Office of Scientific and Technical Information (OSTI.GOV)

Miikkulainen, Ville, E-mail: ville.miikkulainen@helsinki.fi; Nilsen, Ola; Fjellvåg, Helmer

Atomic layer deposition (ALD) holds markedly high potential of becoming the enabling method for achieving the three-dimensional all-solid-state thin-film lithium ion battery (LiB). One of the most crucial components in such a battery is the electrolyte that needs to hold both low electronic conductivity and at least fair lithium ion conductivity being at the same time pinhole free. To obtain these desired properties in an electrolyte film, one necessarily has to have a good control over the elemental composition of the deposited material. The present study reports on the properties of ALD lithium aluminum oxide (Li{sub x}Al{sub y}O{sub z}) thinmore » films. In addition to LiB electrolyte applications, Li{sub x}Al{sub y}O{sub z} is also a candidate low dielectric constant (low-k) etch stop and diffusion barrier material in nanoelectronics applications. The Li{sub x}Al{sub y}O{sub z} films were deposited employing trimethylaluminum-O{sub 3} and lithium tert-butoxide-H{sub 2}O for Al{sub 2}O{sub 3} and Li{sub 2}O/LiOH, respectively. The composition was aimed to be controlled by varying the pulsing ratio of those two binary oxide ALD cycles. The films were characterized by several methods for composition, crystallinity and phase, electrical properties, hardness, porosity, and chemical environment. Regardless of the applied pulsing ratio of Al{sub 2}O{sub 3} and Li{sub 2}O/LiOH, all the studied ALD Li{sub x}Al{sub y}O{sub z} films of 200 and 400 nm in thickness were polycrystalline in the orthorhombic β-LiAlO{sub 2} phase and also very similar to each other with respect to composition and other studied properties. The results are discussed in the context of both fundamental ALD chemistry and applicability of the films as thin-film LiB electrolytes and low-k etch stop and diffusion barriers.« less

"One-sample concept" micro-combinatory for high throughput TEM of binary films.

PubMed

Sáfrán, György

2018-04-01

Phases of thin films may remarkably differ from that of bulk. Unlike to the comprehensive data files of Binary Phase Diagrams [1] available for bulk, complete phase maps for thin binary layers do not exist. This is due to both the diverse metastable, non-equilibrium or instable phases feasible in thin films and the required volume of characterization work with analytical techniques like TEM, SAED and EDS. The aim of the present work was to develop a method that remarkably facilitates the TEM study of the diverse binary phases of thin films, or the creation of phase maps. A micro-combinatorial method was worked out that enables both preparation and study of a gradient two-component film within a single TEM specimen. For a demonstration of the technique thin Mn x Al 1- x binary samples with evolving concentration from x = 0 to x = 1 have been prepared so that the transition from pure Mn to pure Al covers a 1.5 mm long track within the 3 mm diameter TEM grid. The proposed method enables the preparation and study of thin combinatorial samples including all feasible phases as a function of composition or other deposition parameters. Contrary to known "combinatorial chemistry", in which a series of different samples are deposited in one run, and investigated, one at a time, the present micro-combinatorial method produces a single specimen condensing a complete library of a binary system that can be studied, efficiently, within a single TEM session. That provides extremely high throughput for TEM characterization of composition-dependent phases, exploration of new materials, or the construction of phase diagrams of binary films. Copyright © 2018 Elsevier B.V. All rights reserved.

In situ arsenic oxidation and sorption by a Fe-Mn binary oxide waste in soil.

PubMed

McCann, Clare M; Peacock, Caroline L; Hudson-Edwards, Karen A; Shrimpton, Thomas; Gray, Neil D; Johnson, Karen L

2018-01-15

The ability of a Fe-Mn binary oxide waste to adsorb arsenic (As) in a historically contaminated soil was investigated. Initial laboratory sorption experiments indicated that arsenite [As(III)] was oxidized to arsenate [As(V)] by the Mn oxide component, with concurrent As(V) sorption to the Fe oxide. The binary oxide waste had As(III) and As(V) adsorption capacities of 70mgg -1 and 32mgg -1 respectively. X-ray Absorption Near-Edge Structure and Extended X-ray Absorption Fine Structure at the As K-edge confirmed that all binary oxide waste surface complexes were As(V) sorbed by mononuclear bidentate corner-sharing, with 2 Fe at ∼3.27Ǻ. The ability of the waste to perform this coupled oxidation-sorption reaction in real soils was investigated with a 10% by weight addition of the waste to an industrially As contaminated soil. Electron probe microanalysis showed As accumulation onto the Fe oxide component of the binary oxide waste, which had no As innately. The bioaccessibility of As was also significantly reduced by 7.80% (p<0.01) with binary oxide waste addition. The results indicate that Fe-Mn binary oxide wastes could provide a potential in situ remediation strategy for As and Pb immobilization in contaminated soils. Crown Copyright © 2017. Published by Elsevier B.V. All rights reserved.

Continuous composition-spread thin films of transition metal oxides by pulsed-laser deposition

NASA Astrophysics Data System (ADS)

Ohkubo, I.; Christen, H. M.; Khalifah, P.; Sathyamurthy, S.; Zhai, H. Y.; Rouleau, C. M.; Mandrus, D. G.; Lowndes, D. H.

2004-02-01

We have designed an improved pulsed-laser deposition-continuous composition-spread (PLD-CCS) system that overcomes the difficulties associated with earlier related techniques. Our new PLD-CCS system is based on a precisely controlled synchronization between the laser firing, target exchange, and substrate translation/rotation, and offers more flexibility and control than earlier PLD-based approaches. Most importantly, the deposition energetics and the film thickness are kept constant across the entire composition range, and the resulting samples are sufficiently large to allow characterization by conventional techniques. We fabricated binary alloy composition-spread films composed of SrRuO 3 and CaRuO 3. Alternating ablation from two different ceramic targets leads to in situ alloy formation, and the value of x in Sr xCa x-1 RuO 3 can be changed linearly from 0 to 1 (or over any arbitrarily smaller range) along one direction of the substrate.

Optical and photoelectrochemical performance study based on n-ZnO nanorod arrays/p-CuAlO2 laminar films/Ni heterojunction

NASA Astrophysics Data System (ADS)

Ding, Juan; Yang, Haibin; Deng, Weiwen

2014-06-01

A novel ZnO nanorod arrays (NRs)/CuAlO2 laminar films heterojunction nanostructure was grown on the substrate of Ni plates using sol-gel synthesis for laminar films and subsequent hydrothermal reaction for nanorod arrays. The surface morphology, structure, optical and photoelectrochemical behaviors of this heterojunction were considered. Two significant absorption peaks of UV-vis spectra and a favorable forward current to reverse current ratio at applied voltage of -0.7 V to +2 V were observed in this heterojunction. Furthermore, the photoelectrochemical property was indicated that the highest photocurrent of 0.67 mA/cm2 was obtained under AM 1.5 illumination (vs Ag/AgCl). This heterojunction will play an important role in the optoelectronic fields and can be extended to other binary or ternary oxide compositions for optoelectronic applications.

Using Dopants to Tune Oxygen Vacancy Formation in Transition Metal Oxide Resistive Memory.

PubMed

Jiang, Hao; Stewart, Derek A

2017-05-17

Introducing dopants is an important way to tailor and improve electronic properties of transition metal oxides used as high-k dielectric thin films and resistance switching layers in leading memory technologies, such as dynamic and resistive random access memory (ReRAM). Ta 2 O 5 has recently received increasing interest because Ta 2 O 5 -based ReRAM demonstrates high switching speed, long endurance, and low operating voltage. However, advances in optimizing device characteristics with dopants have been hindered by limited and contradictory experiments in this field. We report on a systematic study on how various metal dopants affect oxygen vacancy formation in crystalline and amorphous Ta 2 O 5 from first principles. We find that isoelectronic dopants and weak n-type dopants have little impact on neutral vacancy formation energy and that p-type dopants can lower the formation energy significantly by introducing holes into the system. In contrast, n-type dopants have a deleterious effect and actually increase the formation energy for charged oxygen vacancies. Given the similar doping trend reported for other binary transition metal oxides, this doping trend should be universally valid for typical binary transition metal oxides. Based on this guideline, we propose that p-type dopants (Al, Hf, Zr, and Ti) can lower the forming/set voltage and improve retention properties of Ta 2 O 5 ReRAM.

Experimental bandstructure of the 5 d transition metal oxide IrO2

NASA Astrophysics Data System (ADS)

Kawasaki, Jason; Nie, Yuefeng; Uchida, Masaki; Schlom, Darrell; Shen, Kyle

2015-03-01

In the 5 d iridium oxides the close energy scales of spin-orbit coupling and electron-electron correlations lead to emergent quantum phenomena. Much research has focused on the ternary iridium oxides, e.g. the Ruddlesden-Poppers An + 1BnO3 n + 1 , which exhibit behavior from metal to antiferromagnetic insulator ground states, share common features with the cuprates, and may host a number of topological phases. The binary rutile IrO2 is another important 5 d oxide, which has technological importance for spintronics due to its large spin Hall effect and also applications in catalysis. IrO2 is expected to share similar physics as its perovskite-based cousins; however, due to bond-length distortions of the IrO6 octahedra in the rutile structure, the extent of similarities remains an open question. Here we use angle-resolved photoemission spectroscopy to perform momentum-resolved measurements of the electronic structure of IrO2 . IrO2 thin films were grown by molecular beam epitaxy on TiO2 (110) substrates using an Ir e-beam source and distilled ozone. Films were subsequently transferred through ultrahigh vacuum to a connected ARPES system. Combined with first-principles calculations we explore the interplay of spin-orbit coupling and correlations in IrO2 .

Arsenate uptake and arsenite simultaneous sorption and oxidation by Fe-Mn binary oxides: influence of Mn/Fe ratio, pH, Ca2+, and humic acid.

PubMed

Zhang, Gaosheng; Liu, Huijuan; Qu, Jiuhui; Jefferson, William

2012-01-15

Arsenate retention, arsenite sorption and oxidation on the surfaces of Fe-Mn binary oxides may play an important role in the mobilization and transformation of arsenic, due to the common occurrence of these oxides in the environment. However, no sufficient information on the sorption behaviors of arsenic on Fe-Mn binary oxides is available. This study investigated the influences of Mn/Fe molar ratio, solution pH, coexisting calcium ions, and humic acids have on arsenic sorption by Fe-Mn binary oxides. To create Fe-Mn binary oxides, simultaneous oxidation and co-precipitation methods were employed. The Fe-Mn binary oxides exhibited a porous crystalline structure similar to 2-line ferrihydrite at Mn/Fe ratios 1:3 and below, whereas exhibited similar structures to δ-MnO(2) at higher ratios. The As(V) sorption maximum was observed at a Mn/Fe ratio of 1:6, but As(III) uptake maximum was at Mn/Fe ratio 1:3. However, As(III) adsorption capacity was much higher than that of As(V) at each Mn/Fe ratio. As(V) sorption was found to decrease with increasing pH, while As(III) sorption edge was different, depending on the content of MnO(2) in the binary oxides. The presence of Ca(2+) enhanced the As(V) uptake under alkaline pH, but did not significantly influence the As(III) sorption by 1:9 Fe-Mn binary oxide; whereas the presence of humic acid slightly reduced both As(V) and As(III) uptake. These results indicate that As(III) is more easily immobilized than As(V) in the environment, where Fe-Mn binary oxides are available as sorbents and they represent attractive adsorbents for both As(V) and As(III) removal from water and groundwater. Copyright © 2011 Elsevier Inc. All rights reserved.

Evaporative lithographic patterning of binary colloidal films.

PubMed

Harris, Daniel J; Conrad, Jacinta C; Lewis, Jennifer A

2009-12-28

Evaporative lithography offers a promising new route for patterning a broad array of soft materials. In this approach, a mask is placed above a drying film to create regions of free and hindered evaporation, which drive fluid convection and entrained particles to regions of highest evaporative flux. We show that binary colloidal films exhibit remarkable pattern formation when subjected to a periodic evaporative landscape during drying.

Kinetically driven self-assembly of a binary solute mixture with controlled phase separation via electro-hydrodynamic flow of corona discharge.

PubMed

Jung, Hee Joon; Huh, June; Park, Cheolmin

2012-10-21

This feature article describes a new and facile process to fabricate a variety of thin films of non-volatile binary solute mixtures suitable for high performance organic electronic devices via electro-hydrodynamic flow of conventional corona discharge. Both Corona Discharge Coating (CDC) and a modified version of CDC, Scanning Corona Discharge Coating (SCDC), are based on utilizing directional electric flow, known as corona wind, of the charged uni-polar particles generated by corona discharge between a metallic needle and a bottom plate under a high electric field (5-10 kV cm(-1)). The electric flow rapidly spreads out the binary mixture solution on the bottom plate and subsequently forms a smooth and flat thin film in a large area within a few seconds. In the case of SCDC, the static movement of the bottom electrode on which a binary mixture solution is placed provides further control of thin film formation, giving rise to a film highly uniform over a large area. Interesting phase separation behaviors were observed including nanometer scale phase separation of a polymer-polymer binary mixture and vertical phase separation of a polymer-organic semiconductor mixture. Core-shell type phase separation of either polymer-polymer or polymer-colloidal nanoparticle binary mixtures was also developed with a periodically patterned microstructure when the relative location of the corona wind was controlled to a binary solution droplet on a substrate. We also demonstrate potential applications of thin functional films with controlled microstructures by corona coating to various organic electronic devices such as electroluminescent diodes, field effect transistors and non-volatile polymer memories.

Kinetically driven self-assembly of a binary solute mixture with controlled phase separation via electro-hydrodynamic flow of corona discharge

NASA Astrophysics Data System (ADS)

Jung, Hee Joon; Huh, June; Park, Cheolmin

2012-09-01

This feature article describes a new and facile process to fabricate a variety of thin films of non-volatile binary solute mixtures suitable for high performance organic electronic devices via electro-hydrodynamic flow of conventional corona discharge. Both Corona Discharge Coating (CDC) and a modified version of CDC, Scanning Corona Discharge Coating (SCDC), are based on utilizing directional electric flow, known as corona wind, of the charged uni-polar particles generated by corona discharge between a metallic needle and a bottom plate under a high electric field (5-10 kV cm-1). The electric flow rapidly spreads out the binary mixture solution on the bottom plate and subsequently forms a smooth and flat thin film in a large area within a few seconds. In the case of SCDC, the static movement of the bottom electrode on which a binary mixture solution is placed provides further control of thin film formation, giving rise to a film highly uniform over a large area. Interesting phase separation behaviors were observed including nanometer scale phase separation of a polymer-polymer binary mixture and vertical phase separation of a polymer-organic semiconductor mixture. Core-shell type phase separation of either polymer-polymer or polymer-colloidal nanoparticle binary mixtures was also developed with a periodically patterned microstructure when the relative location of the corona wind was controlled to a binary solution droplet on a substrate. We also demonstrate potential applications of thin functional films with controlled microstructures by corona coating to various organic electronic devices such as electroluminescent diodes, field effect transistors and non-volatile polymer memories.

Perpendicular Magnetic Anisotropy in Heusler Alloy Films and Their Magnetoresistive Junctions

PubMed Central

Frost, William; Samiepour, Marjan

2018-01-01

For the sustainable development of spintronic devices, a half-metallic ferromagnetic film needs to be developed as a spin source with exhibiting 100% spin polarisation at its Fermi level at room temperature. One of the most promising candidates for such a film is a Heusler-alloy film, which has already been proven to achieve the half-metallicity in the bulk region of the film. The Heusler alloys have predominantly cubic crystalline structures with small magnetocrystalline anisotropy. In order to use these alloys in perpendicularly magnetised devices, which are advantageous over in-plane devices due to their scalability, lattice distortion is required by introducing atomic substitution and interfacial lattice mismatch. In this review, recent development in perpendicularly-magnetised Heusler-alloy films is overviewed and their magnetoresistive junctions are discussed. Especially, focus is given to binary Heusler alloys by replacing the second element in the ternary Heusler alloys with the third one, e.g., MnGa and MnGe, and to interfacially-induced anisotropy by attaching oxides and metals with different lattice constants to the Heusler alloys. These alloys can improve the performance of spintronic devices with higher recording capacity. PMID:29324709

Triply responsive films in bioelectrocatalysis with a binary architecture: combined layer-by-layer assembly and hydrogel polymerization.

PubMed

Yao, Huiqin; Hu, Naifei

2011-05-26

In this work, triply responsive films with a specific binary architecture combining layer-by-layer assembly (LbL) and hydrogel polymerization were successfully prepared. First, concanavalin A (Con A) and dextran (Dex) were assembled into {Con A/Dex}(5) LbL layers on electrode surface by the lectin-sugar biospecific interaction between them. The poly(N,N-diethylacrylamide) (PDEA) hydrogels with entrapped horseradish peroxidase (HRP) were then synthesized by polymerization on the surface of LbL inner layers, forming {Con A/Dex}(5)-(PDEA-HRP) films. The films demonstrated reversible pH-, thermo-, and salt-responsive on-off behavior toward electroactive probe Fe(CN)(6)(3-) in its cyclic voltammetric responses. This multiple stimuli-responsive films could be further used to realize triply switchable electrochemical reduction of H(2)O(2) catalyzed by HRP immobilized in the films and mediated by Fe(CN)(6)(3-) in solution. The responsive mechanism of the films was explored and discussed. The pH-sensitive property of the system was attributed to the electrostatic interaction between the {Con A/Dex}(5) inner layers and the probe at different pH, and the thermo- and salt-responsive behaviors should be ascribed to the structure change of PDEA hydrogels for the PDEA-HRP outermost layers under different conditions. The concept of binary architecture was also used to fabricate {Con A/Dex}(5)-(PDEA-GOD) films on electrodes, where GOD = glucose oxidase, which was applied to realize the triply switchable bioelectrocatalysis of glucose by GOD in the films with ferrocenedicarboxylic acid as the mediator in solution. This film system with the unique binary architecture may establish a foundation for fabricating a novel type of multicontrollable biosensors based on bioelectrocatalysis with immobilized enzymes.

Fabrication and Electrical Characterization of Correlated Oxide Field Effect Switching Devices for High Speed Electronics

DTIC Science & Technology

2015-11-19

between the binary oxides and the  perovskite  nickelates and the nature of  d‐orbital filling leads to profound complexity in the electronic nature of the...Al2O3,  (111) MgO,  (111) MgAl2O4,  and  (111)  perovskite  oxide  substrates  [20,21]. The key to achieving epitaxy of (100) rutile‐type compounds is...due to the small path length difference between the p and the s polarized  light  within  the  thin  films.  Thus,  our measurements  are  not  sensitive

Use of a Soluble Anode in Electrodeposition of Thick Bismuth Telluride Layers

NASA Astrophysics Data System (ADS)

Maas, M.; Diliberto, S.; de Vaulx, C.; Azzouz, K.; Boulanger, C.

2014-10-01

Integration of thermoelectric devices within an automotive heat exchanger could enable conversion of lost heat into electrical energy, contributing to improved total output from the engine. For this purpose, synthesis of thick bismuth telluride (Bi2Te3) films is required. Bismuth telluride has been produced by an electrochemical method in nitric acid with a sacrificial bismuth telluride anode as the source of cations. The binary layer grows on the working electrode while the counter-electrode, a Bi2Te3 disk obtained by high frequency melting, is oxidized to BiIII and TeIV. This process leads to auto-regeneration of the solution without modification of its composition. The thickness of films deposited by use of the Bi2Te3 anode was approximately 10 times that without. To demonstrate the utility of a soluble anode in electrochemical deposition, we report characterization of the composition and morphology of the films obtained under different experimental conditions. Perfectly dense and regular Bi2Te3 films (˜400 μm) with low internal stress and uniform composition across the cross-section were prepared. Their thermoelectric properties were assessed.

Interrogation of bimetallic particle oxidation in three dimensions at the nanoscale

PubMed Central

Han, Lili; Meng, Qingping; Wang, Deli; Zhu, Yimei; Wang, Jie; Du, Xiwen; Stach, Eric A.; Xin, Huolin L.

2016-01-01

An understanding of bimetallic alloy oxidation is key to the design of hollow-structured binary oxides and the optimization of their catalytic performance. However, one roadblock encountered in studying these binary oxide systems is the difficulty in describing the heterogeneities that occur in both structure and chemistry as a function of reaction coordinate. This is due to the complexity of the three-dimensional mosaic patterns that occur in these heterogeneous binary systems. By combining real-time imaging and chemical-sensitive electron tomography, we show that it is possible to characterize these systems with simultaneous nanoscale and chemical detail. We find that there is oxidation-induced chemical segregation occurring on both external and internal surfaces. Additionally, there is another layer of complexity that occurs during the oxidation, namely that the morphology of the initial oxide surface can change the oxidation modality. This work characterizes the pathways that can control the morphology in binary oxide materials. PMID:27928998

Engineering the switching dynamics of TiOx-based RRAM with Al doping

NASA Astrophysics Data System (ADS)

Trapatseli, Maria; Khiat, Ali; Cortese, Simone; Serb, Alexantrou; Carta, Daniela; Prodromakis, Themistoklis

2016-07-01

Titanium oxide (TiOx) has attracted a lot of attention as an active material for resistive random access memory (RRAM), due to its versatility and variety of possible crystal phases. Although existing RRAM materials have demonstrated impressive characteristics, like ultra-fast switching and high cycling endurance, this technology still encounters challenges like low yields, large variability of switching characteristics, and ultimately device failure. Electroforming has been often considered responsible for introducing irreversible damage to devices, with high switching voltages contributing to device degradation. In this paper, we have employed Al doping for tuning the resistive switching characteristics of titanium oxide RRAM. The resistive switching threshold voltages of undoped and Al-doped TiOx thin films were first assessed by conductive atomic force microscopy. The thin films were then transferred in RRAM devices and tested with voltage pulse sweeping, demonstrating that the Al-doped devices could on average form at lower potentials compared to the undoped ones and could support both analog and binary switching at potentials as low as 0.9 V. This work demonstrates a potential pathway for implementing low-power RRAM systems.

Recent progress in high performance and reliable n-type transition metal oxide-based thin film transistors

NASA Astrophysics Data System (ADS)

Kwon, Jang Yeon; Kyeong Jeong, Jae

2015-02-01

This review gives an overview of the recent progress in vacuum-based n-type transition metal oxide (TMO) thin film transistors (TFTs). Several excellent review papers regarding metal oxide TFTs in terms of fundamental electron structure, device process and reliability have been published. In particular, the required field-effect mobility of TMO TFTs has been increasing rapidly to meet the demands of the ultra-high-resolution, large panel size and three dimensional visual effects as a megatrend of flat panel displays, such as liquid crystal displays, organic light emitting diodes and flexible displays. In this regard, the effects of the TMO composition on the performance of the resulting oxide TFTs has been reviewed, and classified into binary, ternary and quaternary composition systems. In addition, the new strategic approaches including zinc oxynitride materials, double channel structures, and composite structures have been proposed recently, and were not covered in detail in previous review papers. Special attention is given to the advanced device architecture of TMO TFTs, such as back-channel-etch and self-aligned coplanar structure, which is a key technology because of their advantages including low cost fabrication, high driving speed and unwanted visual artifact-free high quality imaging. The integration process and related issues, such as etching, post treatment, low ohmic contact and Cu interconnection, required for realizing these advanced architectures are also discussed.

Ab initio atomistic thermodynamics study on the oxidation mechanism of binary and ternary alloy surfaces

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Shi-Yu, E-mail: buaasyliu@gmail.com; Department of Mechanical and Biomedical Engineering, City University of Hong Kong, Kowloon, Hong Kong; Liu, Shiyang

Utilizing a combination of ab initio density-functional theory and thermodynamics formalism, we have established the microscopic mechanisms for oxidation of the binary and ternary alloy surfaces and provided a clear explanation for the experimental results of the oxidation. We construct three-dimensional surface phase diagrams (SPDs) for oxygen adsorption on three different Nb-X(110) (X = Ti, Al or Si) binary alloy surfaces. On the basis of the obtained SPDs, we conclude a general microscopic mechanism for the thermodynamic oxidation, that is, under O-rich conditions, a uniform single-phase SPD (type I) and a nonuniform double-phase SPD (type II) correspond to the sustainedmore » complete selective oxidation and the non-sustained partial selective oxidation by adding the X element, respectively. Furthermore, by revealing the framework of thermodynamics for the oxidation mechanism of ternary alloys through the comparison of the surface energies of two separated binary alloys, we provide an understanding for the selective oxidation behavior of the Nb ternary alloy surfaces. Using these general microscopic mechanisms, one could predict the oxidation behavior of any binary and multi-component alloy surfaces based on thermodynamics considerations.« less

Interrogation of bimetallic particle oxidation in three dimensions at the nanoscale

DOE PAGES

Han, Lili; Meng, Qingping; Wang, Deli; ...

2016-12-08

An understanding of bimetallic alloy oxidation is key to the design of hollow-structured binary oxides and the optimization of their catalytic performance. However, one roadblock encountered in studying these binary oxide systems is the difficulty in describing the heterogeneities that occur in both structure and chemistry as a function of reaction coordinate. This is due to the complexity of the three-dimensional mosaic patterns that occur in these heterogeneous binary systems. By combining real-time imaging and chemical-sensitive electron tomography, we show that it is possible to characterize these systems with simultaneous nanoscale and chemical detail. We find that there is oxidation-inducedmore » chemical segregation occurring on both external and internal surfaces. Additionally, there is another layer of complexity that occurs during the oxidation, namely that the morphology of the initial oxide surface can change the oxidation modality. As a result, this work characterizes the pathways that can control the morphology in binary oxide materials.« less

Hierarchical opal grating films prepared by slide coating of colloidal dispersions in binary liquid media.

PubMed

Lee, Wonmok; Kim, Seulgi; Kim, Seulki; Kim, Jin-Ho; Lee, Hyunjung

2015-02-15

There are active researches on well ordered opal films due to their possible applications to various photonic devices. A recently developed slide coating method is capable of rapid fabrication of large area opal films from aqueous colloidal dispersion. In the current study, the slide coating of polystyrene colloidal dispersions in water/i-propanol (IPA) binary media is investigated. Under high IPA content in a dispersing medium, resulting opal film showed a deterioration of long range order, as well as a decreased film thickness due to dilution effect. From the binary liquid, the dried opal films exhibited the unprecedented topological groove patterns with varying periodic distances as a function of alcohol contents in the media. The groove patterns were consisted of the hierarchical structures of the terraced opal layers with periodic thickness variations. The origin of the groove patterns was attributed to a shear-induced periodic instability of colloidal concentration within a thin channel during the coating process which was directly converted to a groove patterns in a resulting opal film due to rapid evaporation of liquid. The groove periods of opal films were in the range of 50-500 μm, and the thickness differences between peak and valley of the groove were significantly large enough to be optically distinguishable, such that the coated films can be utilized as the optical grating film to disperse infra-red light. Utilizing a lowered hydrophilicity of water/IPA dispersant, an opal film could be successfully coated on a flexible Mylar film without significant dewetting problem. Copyright © 2014 Elsevier Inc. All rights reserved.

Physical-mechanical properties of agar/κ-carrageenan blend film and derived clay nanocomposite film.

PubMed

Rhim, Jong-Whan

2012-12-01

Binary blend films with different mixing ratio of agar and κ-carrageenan were prepared using a solution casting method with and without nanoclay and the effect of their composition on the mechanical, water vapor barrier, and water resistance properties was tested. The tensile strength (TS) of the κ-carrageenan film was greater than that of agar film. The water vapor permeability (WVP) of the agar film was lower than that of κ-carrageenan film, the swelling ratio (SR) and water solubility (WS) of κ-carrageenan film were higher than those of agar film. Each property of the binary blend films varied proportionately depending on the mixing ratio of each component. The XRD result indicated that the nanocomposite with agar/κ-carrageenan/clay (Cloisite(®) Na(+)) was intercalated. Consequently, the mechanical strength, water vapor barrier properties, and water contact angle (CA) were significantly (P < 0.05) improved through nanocomposite formation. © 2012 Institute of Food Technologists®

Streaming potential method for characterizing interaction of electrical double layers between rice roots and Fe/Al oxide-coated quartz in situ.

PubMed

Liu, Zhao-Dong; Wang, Hai-Cui; Li, Jiu-Yu; Xu, Ren-Kou

2017-10-01

The interaction between rice roots and Fe/Al oxide-coated quartz was investigated through zeta potential measurements and column leaching experiments in present study. The zeta potentials of rice roots, Fe/Al oxide-coated quartz, and the binary systems containing rice roots and Fe/Al oxide-coated quartz were measured by a specially constructed streaming potential apparatus. The interactions between rice roots and Fe/Al oxide-coated quartz particles were evaluated/deduced based on the differences of zeta potentials between the binary systems and the single system of rice roots. The zeta potentials of the binary systems moved in positive directions compared with that of rice roots, suggesting that there were overlapping of diffuse layers of electric double layers on positively charged Fe/Al oxide-coated quartz and negatively charged rice roots and neutralization of positive charge on Fe/Al oxide-coated quartz with negative charge on rice roots. The greater amount of positive charges on Al oxide led to the stronger interaction of Al oxide-coated quartz with rice roots and the more shift of zeta potential compared with Fe oxide. The overlapping of diffuse layers on Fe/Al oxide-coated quartz and rice roots was confirmed by column leaching experiments. The greater overlapping of diffuse layers on Al oxide and rice roots led to more simultaneous adsorptions of K + and NO 3 - and greater reduction in leachate electric conductivity when the column containing Al oxide-coated quartz and rice roots was leached with KNO 3 solution, compared with the columns containing rice roots and Fe oxide-coated quartz or quartz. When the KNO 3 solution was replaced with deionized water to flush the columns, more K + and NO 3 - were desorbed from the binary system containing Al oxide-coated quartz and rice roots than from other two binary systems, suggesting that the stronger electrostatic interaction between Al oxide and rice roots promoted the desorption of K + and NO 3 - from the binary system and enhanced overlapping of diffuse layers on these oppositely charged surfaces compared with other two binary systems. In conclusion, the overlapping of diffuse layers occurred between positively charged Fe/Al oxides and rice roots, which led to neutralization of opposite charge and affected adsorption and desorption of ions onto and from the charged surfaces of Fe/Al oxides and rice roots.

Microstructure evolution of a dissimilar junction interface between an Al sheet and a Ni-coated Cu sheet joined by magnetic pulse welding

DOE Office of Scientific and Technical Information (OSTI.GOV)

Itoi, Takaomi, E-mail: itoi@faculty.chiba-u.jp

An Al sheet and a Ni-coated Cu sheet were lap joined by using magnetic pulse welding (MPW). Tensile tests were performed on the joined sheets, and a good lap joint was achieved at a discharge energy of > 0.9 kJ. The weld interface exhibited a wavy morphology and an intermediate layer along the weld interface. Microstructure observations of the intermediate layer revealed that the Ni coating region consisted of a Ni–Al binary amorphous alloy and that the Al sheet region contained very fine Al nanograins. Ni fragments indicative of unmelted residual Ni from the coating were also observed in partsmore » of the intermediate layer. Formation of these features can be attributed to localize melting and a subsequent high rate cooling of molten Al and Ni confined to the interface during the MPW process. In the absence of an oxide film, atomic-scale bonding was also achieved between the intermediate layer and the sheet surfaces after the collision. MPW utilises impact energy, which affects the sheet surfaces. From the obtained results, good lap joint is attributed to an increased contact area, the anchor effect, work hardening, the absence of an oxide film, and suppressed formation of intermetallic compounds at the interface. - Highlights: •Good lap joint of an Al sheet and a Ni-coated Cu sheet was achieved by using magnetic pulse welding. •A Ni–Al binary amorphous alloy was formed as an intermediate layer at weld interface. •Atomic-scale bonding was achieved between the intermediate layer and the sheet surfaces.« less

Dry etching technologies for the advanced binary film

NASA Astrophysics Data System (ADS)

Iino, Yoshinori; Karyu, Makoto; Ita, Hirotsugu; Yoshimori, Tomoaki; Azumano, Hidehito; Muto, Makoto; Nonaka, Mikio

2011-11-01

ABF (Advanced Binary Film) developed by Hoya as a photomask for 32 (nm) and larger specifications provides excellent resistance to both mask cleaning and 193 (nm) excimer laser and thereby helps extend the lifetime of the mask itself compared to conventional photomasks and consequently reduces the semiconductor manufacturing cost [1,2,3]. Because ABF uses Ta-based films, which are different from Cr film or MoSi films commonly used for photomask, a new process is required for its etching technology. A patterning technology for ABF was established to perform the dry etching process for Ta-based films by using the knowledge gained from absorption layer etching for EUV mask that required the same Ta-film etching process [4]. Using the mask etching system ARES, which is manufactured by Shibaura Mechatronics, and its optimized etching process, a favorable CD (Critical Dimension) uniformity, a CD linearity and other etching characteristics were obtained in ABF patterning. Those results are reported here.

Interactions of Organic Solvents at Graphene/α-Al 2 O 3 and Graphene Oxide/α-Al 2 O 3 Interfaces Studied by Sum Frequency Generation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Achtyl, Jennifer L.; Vlassiouk, Ivan V.; Dai, Sheng

2014-07-17

The adsorption of 1-hexanol from cyclohexane-d12 at single-layer graphene/α-Al2O3 interfaces was probed at mole percent values as low as 0.05 in the C–H stretching region using vibrational sum frequency generation (SFG). The SFG spectra are indiscernible from those obtained in the absence of graphene, and from those obtained in the presence of graphene oxide films prepared via oxygen plasma treatment of pristine single-layer graphene. A Langmuir adsorption model yields observed free adsorption energies of -19.9(5) to -20.9(3) kJ/mol for the three interfaces. The results indicate that the molecular structure of the hexanol alkyl chain is subject to the same orientationmore » distribution when graphene, oxidized or not, is present or absent at the α-Al2O3/cyclohexane-d12 interface. Moreover, it appears that the adsorption of 1-hexanol in this binary mixture is driven by hexanol interactions with the underlying oxide support, and that a single layer of graphene does not influence the extent of this interaction, even when defects are introduced to it. Finally, our structural and quantitative thermodynamic data provide important benchmarks for theoretical calculations and atomistic simulations of liquid/graphene interfaces. We hypothesize that defects emerging in graphene during operation of any device application that relies on layered solvent/graphene/oxide interfaces have little impact on the interfacial structure or thermodynamics, at least for the binary mixture and over the range of defect densities probed in our studies.« less

Enhanced physicochemical properties of chitosan/whey protein isolate composite film by sodium laurate-modified TiO2 nanoparticles.

PubMed

Zhang, Wei; Chen, Jiwang; Chen, Yue; Xia, Wenshui; Xiong, Youling L; Wang, Hongxun

2016-03-15

Chitosan/whey protein isolate film incorporated with sodium laurate-modified TiO2 nanoparticles was developed. The nanocomposite film was characterized by scanning electron microscopy, X-ray diffraction and differential scanning calorimetry, and investigated in physicochemical properties as color, tensile strength, elongation at break, water vapor permeability and water adsorption isotherm. Our results showed that the nanoparticles improved the compatibility of whey protein isolate and chitosan. Addition of nanoparticles increased the whiteness of chitosan/whey protein isolate film, but decreased its transparency. Compared with binary film, the tensile strength and elongation at break of nanocomposite film were increased by 11.51% and 12.01%, respectively, and water vapor permeability was decreased by 7.60%. The equilibrium moisture of nanocomposite film was lower than binary film, and its water sorption isotherm of the nanocomposite film fitted well to Guggenheim-Anderson-deBoer model. The findings contributed to the development of novel food packaging materials. Copyright © 2015 Elsevier Ltd. All rights reserved.

Electrical properties and transport mechanisms in phase change memory thin films of quasi-binary-line GeTe–Sb{sub 2}Te{sub 3} chalcogenide semiconductors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sherchenkov, A. A.; Kozyukhin, S. A., E-mail: sergkoz@igic.ras.ru; Lazarenko, P. I.

The temperature dependences of the resistivity and current–voltage (I–V) characteristics of phase change memory thin films based on quasi-binary-line GeTe–Sb{sub 2}Te{sub 3} chalcogenide semiconductors Ge{sub 2}Sb{sub 2}Te{sub 5}, GeSb{sub 2}Te{sub 5}, and GeSb{sub 4}Te{sub 7} are investigated. The effect of composition variation along the quasibinary line on the electrical properties and transport mechanisms of the thin films is studied. The existence of three ranges with different I–V characteristics is established. The position and concentration of energy levels controlling carrier transport are estimated. The results obtained show that the electrical properties of the thin films can significantly change during a shiftmore » along the quasi-binary line GeTe–Sb{sub 2}Te{sub 3}, which is important for targeted optimization of the phase change memory technology.« less

Cu2O-based solar cells using oxide semiconductors

NASA Astrophysics Data System (ADS)

Minami, Tadatsugu; Nishi, Yuki; Miyata, Toshihiro

2016-01-01

We describe significant improvements of the photovoltaic properties that were achieved in Al-doped ZnO (AZO)/n-type oxide semiconductor/p-type Cu2O heterojunction solar cells fabricated using p-type Cu2O sheets prepared by thermally oxidizing Cu sheets. The multicomponent oxide thin film used as the n-type semiconductor layer was prepared with various chemical compositions on non-intentionally heated Cu2O sheets under various deposition conditions using a pulsed laser deposition method. In Cu2O-based heterojunction solar cells fabricated using various ternary compounds as the n-type oxide thin-film layer, the best photovoltaic performance was obtained with an n-ZnGa2O4 thin-film layer. In most of the Cu2O-based heterojunction solar cells using multicomponent oxides composed of combinations of various binary compounds, the obtained photovoltaic properties changed gradually as the chemical composition was varied. However, with the ZnO-MgO and Ga2O3-Al2O3 systems, higher conversion efficiencies (η) as well as a high open circuit voltage (Voc) were obtained by using a relatively small amount of MgO or Al2O3, e.g., (ZnO)0.91-(MgO)0.09 and (Ga2O3)0.975-(Al2O3)0.025, respectively. When Cu2O-based heterojunction solar cells were fabricated using Al2O3-Ga2O3-MgO-ZnO (AGMZO) multicomponent oxide thin films deposited with metal atomic ratios of 10, 60, 10 and 20 at.% for the Al, Ga, Mg and Zn, respectively, a high Voc of 0.98 V and an η of 4.82% were obtained. In addition, an enhanced η and an improved fill factor could be achieved in AZO/n-type multicomponent oxide/p-type Cu2O heterojunction solar cells fabricated using Na-doped Cu2O (Cu2O:Na) sheets that featured a resistivity controlled by optimizing the post-annealing temperature and duration. Consequently, an η of 6.25% and a Voc of 0.84 V were obtained in a MgF2/AZO/n-(Ga2O3-Al2O3)/p-Cu2O:Na heterojunction solar cell fabricated using a Cu2O:Na sheet with a resistivity of approximately 10 Ω·cm and a (Ga0.975Al0.025)2O3 thin film with a thickness of approximately 60 nm. In addition, a Voc of 0.96 V and an η of 5.4% were obtained in a MgF2/AZO/n-AGMZO/p-Cu2O:Na heterojunction solar cell.

Effect of post-annealing on the magnetic properties of sputtered Mn56Al44 thin films

NASA Astrophysics Data System (ADS)

Gupta, Nanhe Kumar; Husain, Sajid; Barwal, Vineet; Behera, Nilamani; Chaudhary, Sujeet

2018-05-01

Mn56Al44 (MnAl) thin films of constant thickness (˜30nm) were grown on naturally oxidized Si substrates using DC-magnetron sputtering. Effect of deposition parameters such as sputtering power, substrate temperature (Ts), and post-annealing temperature have been systematically invstigated. X-ray diffraction patterns revealed the presence of mixed phases, namely the τ- and β-MnAl. The highest saturation magnetization (MS) was found to be 65emu/cc using PPMS-VSM in film grown at Ts=500°C. The magnetic ordering was found to get significantly improved by performing post-annealing of these as-grwon at 400°C for 1 hr in the presence of out-of-plane magnetic field of ˜1500Oe in vacuum. In particular, at room temperature (RT), the MS got enhanced after magnetic annealing from 65emu/cc to 500 emu/cc in MnAl films grown at Ts=500°C. This sample exhibited a magneto-resistance of ˜1.5% at RT. The tuning of the structural and magnetic properties of MnAl binary alloy thin films as established here by varying the growth parameters is critical with regards to the prospective applications of MnAl, a metastable ferromagnetic system which possesses the highest perpendicular magnetic anisotropy at RT till date.

Ce-Sn binary oxide catalyst for the selective catalytic reduction of NOx by NH3

NASA Astrophysics Data System (ADS)

Liu, Zhiming; Feng, Xu; Zhou, Zizheng; Feng, Yongjun; Li, Junhua

2018-01-01

Ce-Sn binary oxide catalysts prepared by the hydrothermal method have been investigated for the selective catalytic reduction (SCR) of NOx with NH3. Compared with pure CeO2 and SnO2, Ce-Sn binary oxide catalyst showed significantly higher NH3-SCR activity. Moreover, Ce-Sn catalyst showed high resistance against H2O and SO2. The high catalytic performance of Ce-Sn binary oxide is attributed to the synergetic effect between Ce and Sn species, which not only enhances the redox property of the catalyst but also increases the Lewis acidity, thus promoting the adsorption and activation of NH3 species, which contributes to improving the NH3-SCR performance.

Simultaneous voltammetric determination of dopamine and epinephrine in human body fluid samples using a glassy carbon electrode modified with nickel oxide nanoparticles and carbon nanotubes within a dihexadecylphosphate film.

PubMed

Figueiredo-Filho, Luiz C S; Silva, Tiago A; Vicentini, Fernando C; Fatibello-Filho, Orlando

2014-06-07

A simple and highly selective electrochemical method was developed for the single or simultaneous determination of dopamine (DA) and epinephrine (EP) in human body fluids using a glassy carbon electrode modified with nickel oxide nanoparticles and carbon nanotubes within a dihexadecylphosphate film using square-wave voltammetry (SWV) or differential-pulse voltammetry (DPV). Using DPV with the proposed electrode, a separation of ca. 360 mV between the peak reduction potentials of DA and EP present in binary mixtures was obtained. The analytical curves for the simultaneous determination of dopamine and epinephrine showed an excellent linear response, ranging from 7.0 × 10(-8) to 4.8 × 10(-6) and 3.0 × 10(-7) to 9.5 × 10(-6) mol L(-1) for DA and EP, respectively. The detection limits for the simultaneous determination of DA and EP were 5.0 × 10(-8) mol L(-1) and 8.2 × 10(-8) mol L(-1), respectively. The proposed method was successfully applied in the simultaneous determination of these analytes in human body fluid samples of cerebrospinal fluid, human serum and lung fluid.

Oxidation and reduction in irradiated binary crystals of resorcinol and progesterone

NASA Astrophysics Data System (ADS)

Box, Harold C.; Budzinski, Edwin E.

1985-12-01

The binary single crystals of resorcinol and progesterone were x-irradiated at 4.2 K. The semiquinone of resorcinol was generated by radiation induced oxidation. The oxidation and reduction products were identified from ESR and ENDOR measurements. (AIP)

Liquid phase heteroepitaxial growth on convex substrate using binary phase field crystal model

NASA Astrophysics Data System (ADS)

Lu, Yanli; Zhang, Tinghui; Chen, Zheng

2018-06-01

The liquid phase heteroepitaxial growth on convex substrate is investigated with the binary phase field crystal (PFC) model. The paper aims to focus on the transformation of the morphology of epitaxial films on convex substrate with two different radiuses of curvature (Ω) as well as influences of substrate vicinal angles on films growth. It is found that films growth experience different stages on convex substrate with different radiuses of curvature (Ω). For Ω = 512 Δx , the process of epitaxial film growth includes four stages: island coupled with layer-by-layer growth, layer-by-layer growth, island coupled with layer-by-layer growth, layer-by-layer growth. For Ω = 1024 Δx , film growth only experience islands growth and layer-by-layer growth. Also, substrate vicinal angle (π) is an important parameter for epitaxial film growth. We find the film can grow well when π = 2° for Ω = 512 Δx , while the optimized film can be obtained when π = 4° for Ω = 512 Δx .

Growth of vertically aligned nanowires in metal-oxide nanocomposites: kinetic Monte-Carlo modeling versus experiments.

PubMed

Hennes, M; Schuler, V; Weng, X; Buchwald, J; Demaille, D; Zheng, Y; Vidal, F

2018-04-26

We employ kinetic Monte-Carlo simulations to study the growth process of metal-oxide nanocomposites obtained via sequential pulsed laser deposition. Using Ni-SrTiO3 (Ni-STO) as a model system, we reduce the complexity of the computational problem by choosing a coarse-grained approach mapping Sr, Ti and O atoms onto a single effective STO pseudo-atom species. With this ansatz, we scrutinize the kinetics of the sequential synthesis process, governed by alternating deposition and relaxation steps, and analyze the self-organization propensity of Ni atoms into straight vertically aligned nanowires embedded in the surrounding STO matrix. We finally compare the predictions of our binary toy model with experiments and demonstrate that our computational approach captures fundamental aspects of self-assembled nanowire synthesis. Despite its simplicity, our modeling strategy successfully describes the impact of relevant parameters like the concentration or laser frequency on the final nanoarchitecture of metal-oxide thin films grown via pulsed laser deposition.

Fe-Mn binary oxide incorporated into diatomite as an adsorbent for arsenite removal: preparation and evaluation.

PubMed

Chang, Fangfang; Qu, Jiuhui; Liu, Huijuan; Liu, Ruiping; Zhao, Xu

2009-10-15

Fe-Mn binary oxide incorporated into diatomite (FMBO-diatomite) was prepared by a simple coating method, and exhibited high oxidation and adsorption ability for arsenite [As(III)]. After being incorporated by Fe-Mn binary oxide, the surface area of diatomite increased 36%, and the pore volume increased five times. The pHzpc of FMBO-diatomite was determined to be 8.1. These characteristics are responsible for the increased As(III) adsorption efficiency. The adsorption equilibria of As(III) on FMBO-diatomite were described well by a Langmuir isotherm model due to the homogeneous distribution of Fe-Mn binary oxide on a diatomite surface. As(III) was oxidized into As(V), and then adsorbed by FMBO-diatomite. The oxidation and adsorption efficiencies for As(III) depended deeply on the pH of solution. When the pH was raised to 8.1, the As(III) adsorption efficiency of FMBO-diatomite was almost equal to the As(III) oxidation efficiency. Silicate and phosphate had negative effects on As(III) adsorption. Also the influence of silicate and phosphate with the pH variation was different.

Nanostructured iron(III)-copper(II) binary oxide: a novel adsorbent for enhanced arsenic removal from aqueous solutions.

PubMed

Zhang, Gaosheng; Ren, Zongming; Zhang, Xiwang; Chen, Jing

2013-08-01

To obtain a highly efficient and low-cost adsorbent for arsenic removal from water, a novel nanostructured Fe-Cu binary oxide was synthesized via a facile co-precipitation method. Various techniques including BET surface area measurement, powder XRD, SEM, and XPS were used to characterize the synthetic Fe-Cu binary oxide. It showed that the oxide was poorly crystalline, 2-line ferrihydrite-like and was aggregated with many nanosized particles. Laboratory experiments were performed to investigate adsorption kinetics, adsorption isotherms, pH adsorption edge and regeneration of spent adsorbent. The results indicated that the Fe-Cu binary oxide with a Cu: Fe molar ratio of 1:2 had excellent performance in removing both As(V) and As(III) from water, and the maximal adsorption capacities for As(V) and As(III) were 82.7 and 122.3 mg/g at pH 7.0, respectively. The values are favorable, compared to those reported in the literature using other adsorbents. The coexisting sulfate and carbonate had no significant effect on arsenic removal. However, the presence of phosphate obviously inhibited the arsenic removal, especially at high concentrations. Moreover, the Fe-Cu binary oxide could be readily regenerated using NaOH solution and be repeatedly used. The Fe-Cu binary oxide could be a promising adsorbent for both As(V) and As(III) removal because of its excellent performance, facile and low-cost synthesis process, and easy regeneration. Copyright © 2013 Elsevier Ltd. All rights reserved.

Effect of Adding SiO2-Al2O3 Sol into Anodizing Bath on Corrosion Resistance of Oxidation Film on Magnesium Alloy

NASA Astrophysics Data System (ADS)

Liu, Huicong; Zhu, Liqun; Li, Weiping

Due to the widely use in automobile and construction field, AZ91D magnesium alloy need to be protected more effectively for its high chemical activity. In this paper, three kinds of films were formed on magnesium alloy. The first kind of film, named as anodic oxidation film, was prepared by anodic oxidation in the alkaline solution. The processes for preparing the second kind of film, named as multiple film, involved coating sol-gel on the samples and heat-treating before anodic oxidation. The third kind of film was prepared by anodic oxidation in the alkaline oxidation solution containning 5% (vol) SiO2-Al2O3 sol, named as modified oxidation film. The corrosion resistance of the three different films was investigated. The results showed that the modified oxidation film had the highest corrosion resistance due to the largest thickness and most dense surface morphology. Sol was discussed to react during the film forming process, which leaded to the difference between modified oxidation film and anodic oxidation film.

Effects of the polarizability and packing density of transparent oxide films on water vapor permeation.

PubMed

Koo, Won Hoe; Jeong, Soon Moon; Choi, Sang Hun; Kim, Woo Jin; Baik, Hong Koo; Lee, Sung Man; Lee, Se Jong

2005-06-09

The tin oxide and silicon oxide films have been deposited on polycarbonate substrates as gas barrier films, using a thermal evaporation and ion beam assisted deposition process. The oxide films deposited by ion beam assisted deposition show a much lower water vapor transmission rate than those by thermal evaporation. The tin oxide films show a similar water vapor transmission rate to the silicon oxide films in thermal evaporation but a lower water vapor transmission rate in IBAD. These results are related to the fact that the permeation of water vapor with a large dipole moment is affected by the chemistry of oxides and the packing density of the oxide films. The permeation mechanism of water vapor through the oxide films is discussed in terms of the chemical interaction with water vapor and the microstructure of the oxide films. The chemical interaction of water vapor with oxide films has been investigated by the refractive index from ellipsometry and the OH group peak from X-ray photoelectron spectroscopy, and the microstructure of the composite oxide films was characterized using atomic force microscopy and a transmission electron microscope. The activation energy for water vapor permeation through the oxide films has also been measured in relation to the permeation mechanism of water vapor. The diffusivity of water vapor for the tin oxide films has been calculated from the time lag plot, and its implications are discussed.

Binary Mixtures of Permanganate and Chlorinated Volatile Organic Compounds in Groundwater Samples: Sample Preservation and Analysis

EPA Science Inventory

Ground water samples collected at sites where in-situ chemical oxidation (ISCO) has been deployed may contain binary mixtures of ground water contaminants and permanganate (MnO4-), an oxidant injected into the subsurface to destroy the contaminant. Commingling of the oxidant and ...

Characterization and corrosion behavior of F6NM stainless steel treated in high temperature water

NASA Astrophysics Data System (ADS)

Li, Zheng-yang; Cai, Zhen-bing; Yang, Wen-jin; Shen, Xiao-yao; Xue, Guo-hong; Zhu, Min-hao

2018-03-01

F6NM martensitic stainless steel was exposed to 350 °C water condition for 500, 1500, and 2500 h to simulate pressurized water reactor (PWR) condition. The characterization and corrosion behavior of the oxide film were investigated. Results indicate that the exposed steel surface formed a double-layer oxide film. The outer oxide film is Fe-rich and contains two type oxide particles. However, the inner oxide film is Cr-rich, and two oxide films, whose thicknesses increase with increasing exposure time. The oxide film reduces the corrosion behavior because the outer oxide film has many crack and pores. Finally, the mechanism and factors affecting the formation of the oxide film were investigated.

Green binary and phase shifting mask

NASA Astrophysics Data System (ADS)

Shy, S. L.; Hong, Chao-Sin; Wu, Cheng-San; Chen, S. J.; Wu, Hung-Yu; Ting, Yung-Chiang

2009-12-01

SixNy/Ni thin film green mask blanks were developed , and are now going to be used to replace general chromium film used for binary mask as well as to replace molydium silicide embedded material for AttPSM for I-line (365 nm), KrF (248 nm), ArF (193 nm) and Contact/Proximity lithography. A bilayer structure of a 1 nm thick opaque, conductive nickel layer and a SixNy layer is proposed for binary and phase-shifting mask. With the good controlling of plasma CVD of SixNy under silane (50 sccm), ammonia (5 sccm) and nitrogen (100 sccm), the pressure is 250 mTorr. and RF frequency 13.56 MHz and power 50 W. SixNy has enough deposition latitude to meet the requirements as an embedded layer for required phase shift 180 degree, and the T% in 193, 248 and 365 nm can be adjusted between 2% to 20% for binary and phase shifting mask usage. Ni can be deposited by E-gun, its sheet resistance Rs is less than 1.435 kΩ/square. Jeol e-beam system and I-line stepper are used to evaluate these thin film green mask blanks, feature size less than 200 nm half pitch pattern and 0.558 μm pitch contact hole can be printed. Transmission spectrums of various thickness of SixNy film are inspected by using UV spectrometer and FTIR. Optical constants of the SixNy film are measured by n & k meter and surface roughness is inspected by using Atomic Force Microscope (AFM).

Ternary and coupled binary zinc tin oxide nanopowders: Synthesis, characterization, and potential application in photocatalytic processes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ivetić, T.B., E-mail: tamara.ivetic@df.uns.ac.rs; Finčur, N.L.; Đačanin, Lj. R.

2015-02-15

Highlights: • Mechanochemically synthesized nanocrystalline zinc tin oxide (ZTO) powders. • Photocatalytic degradation of alprazolam in the presence of ZTO water suspensions. • Coupled binary ZTO exhibits enhanced photocatalytic activity compared to ternary ZTO. - Abstract: In this paper, ternary and coupled binary zinc tin oxide nanocrystalline powders were prepared via simple solid-state mechanochemical method. X-ray diffraction, scanning electron microscopy, Raman and reflectance spectroscopy were used to study the structure and optical properties of the obtained powder samples. The thermal behavior of zinc tin oxide system was examined through simultaneous thermogravimetric-differential scanning calorimetric analysis. The efficiencies of ternary (Zn{sub 2}SnO{submore » 4} and ZnSnO{sub 3}) and coupled binary (ZnO/SnO{sub 2}) zinc tin oxide water suspensions in the photocatalytic degradation of alprazolam, short-acting anxiolytic of the benzodiazepine class of psychoactive drugs, under UV irradiation were determined and compared with the efficiency of pure ZnO and SnO{sub 2}.« less

Monte Carlo simulation of magnetic properties of mixed spin (3/2, 1) ferromagnetic and ferrimagnetic disordered binary alloys with amorphous structure

NASA Astrophysics Data System (ADS)

Motlagh, H. Nakhaei; Rezaei, G.

2018-01-01

Monte Carlo simulation is used to study the magnetic properties of mixed spin (3/2, 1) disordered binary alloys on simple cubic, hexagonal and amorphous magnetic ultra-thin films with 18 × 18 × 2 atoms. To this end, at the first approximation, the exchange coupling interaction between the spins is considered as a constant value and at the second one, the Ruderman-Kittel-Kasuya-Yosida (RKKY) model is used. Effects of concentration, structure, exchange interaction, single ion-anisotropy and the film size on the magnetic properties of disordered ferromagnetic and ferrimagnetic binary alloys are investigated. Our results indicate that the spontaneous magnetization and critical temperatures of rare earth-3d transition binary alloys are affected by these parameters. It is also found that in the ferrimagnetic state, the compensation temperature (Tcom) and the magnetic rearrangement temperature (TR) appear for some concentrations.

Removal of thallium from aqueous solutions using Fe-Mn binary oxides.

PubMed

Li, Huosheng; Chen, Yongheng; Long, Jianyou; Li, Xiuwan; Jiang, Daqian; Zhang, Ping; Qi, Jianying; Huang, Xuexia; Liu, Juan; Xu, Ruibing; Gong, Jian

2017-09-15

In this study, Fe-Mn binary oxides, which harbor the strong oxidative power of manganese dioxide and the high adsorption capacity of iron oxides, were synthesized for Tl(I) removal using a concurrent chemical oxidation and precipitation method. The adsorption of Tl onto the Fe-Mn adsorbent was fast, effective, and selective, with equilibrium sorption reaching over 95% under a broad operating pH (3-12), and high ionic strength (0.1-0.5mol/L). The adsorption can be well fitted with both Langmuir and Freundlich isotherms, and the kinetics can be well described by the pseudo-second-order model. Fourier transform infrared (FT-IR) and X-ray photoelectron spectroscopy (XPS) spectra suggest that surface complexation, oxidation and precipitation were the main mechanisms for the removal of Tl. This study shows that the Fe-Mn binary oxides could be a promising adsorbent for Tl removal. Copyright © 2017 Elsevier B.V. All rights reserved.

Spatial atomic layer deposition of ZnO/TiO{sub 2} nanolaminates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen, Rong, E-mail: rongchen@mail.hust.edu.cn; Lin, Ji-Long; He, Wen-Jie

2016-09-15

Spatial atomic layer deposition (S-ALD) is a potential high-throughput manufacturing technique offering fast and large scale ultrathin films deposition. Here, an S-ALD system with modular injectors is introduced for fabricating binary oxides and their nanolaminates. By optimizing the deposition conditions, both ZnO and TiO{sub 2} films demonstrate linear growth and desired surface morphology. The as-deposited ZnO film has high carrier mobility, and the TiO{sub 2} film shows suitable optical transmittance and band gap. The ZnO/TiO{sub 2} nanolaminates are fabricated by alternating substrate movement between each S-ALD modular units of ZnO and TiO{sub 2}. The grazing incidence x-ray diffraction spectra ofmore » nanolaminates demonstrating the signature peaks are weaker for the same thickness nanolaminates with more bilayers, suggesting tuning nanolaminates from crystalline to amorphous. Optical transmittances of ZnO/TiO{sub 2} laminates are enhanced with the increase of the bilayers' number in the visible range. Refractive indices of nanolaminates increase with the thickness of each bilayer decreasing, which demonstrates the feasibility of obtaining desired refractive indices by controlling the bilayer number. The electronic properties, including mobility, carrier concentration, and conductivity, are also tunable with different bilayers.« less

Nanostructured Mn-Fe Binary Mixed Oxide: Synthesis, Characterization and Evaluation for Arsenic Removal.

PubMed

Pillewan, Pradnya; Mukherjee, Shrabanti; Bansiwal, Amit; Rayalu, Sadhana

2014-07-01

Adsorption of arsenic on bimetallic Mn and Fe mixed oxide was carried out using both field as well as simulated water. The material was synthesized using hydrothermal method and characterized using X-ray diffraction (XRD) and scanning electron microscopy (SEM). Langmuir and Freundlich adsorption isotherms were computed using batch adsorption studies to determine the adsorption capacity of Mn-Fe binary mixed oxide for arsenic. Adsorption capacity for MFBMO obtained from Freundlich model was found to be 2.048 mg/g for simulated water and 1.084 mg/g for field water. Mn-Fe binary mixed oxide was found to be effective adsorbent for removal of arsenic from water.

Development of porous metal oxide thin films by co-evaporation

NASA Astrophysics Data System (ADS)

Tesfamichael, T.; Motta, Nunzio; Bostrom, Thor; Bell, J. M.

2007-03-01

This paper focuses on the development of mixed metal oxide thin films and physical characterization of the films. The films were produced by co-evaporation of titanium oxide and tungsten oxide powders. This allowed the development of titanium oxide-tungsten oxide films as analyzed using XPS. Examination in the SEM and AFM showed that the films were nanoporous with the pore size and pore orientation varying as a function of the deposition angle. UV-vis spectra of the films show an increase of transmittance with increasing deposition angle which is attributed to the structure and porosity of the films. Raman analysis indicated that the as-deposited films have broad and weak Raman characteristics, attributed to the nanocrystal nature of the films and the presence of defects, and the peak broadening deceases after annealing the film, as expected.

Atomic Layer Deposition of GeSe Films Using HGeCl3 and [(CH3)3Si]2Se with the Discrete Feeding Method for the Ovonic Threshold Switch.

PubMed

Kim, Woohyun; Yoo, Sijung; Yoo, Chanyoung; Park, Eui-Sang; Jeon, Jeongwoo; Kwon, Young Jae; Woo, Kyung Seok; Kim, Han Joon; Lee, Yoon Kyeung; Hwang, Cheol Seong

2018-06-19

The ovonic threshold switch (OTS) based on the voltage snapback of amorphous chalcogenides possesses several desirable characteristics for passive memory array. Among the materials that can be used as OTS, GeSe has a strong glass-forming ability (~350°C crystallization temperature), with a simple binary composition. Described herein is a new method of depositing GeSe films through atomic layer deposition (ALD), in which HGeCl3 and [(CH3)3Si]2Se are used as Ge and Se precursors, respectively. The stoichiometric GeSe thin films were formed through a ligand exchange reaction between the two precursor molecules, without the adoption of an additional reaction gas, at low substrate temperatures ranging from 70 to 150°C. The pseudo-saturation behavior of ALD, however, which requires a long time to achieve the saturation growth rate, was observed. This was due to the adverse influence of the physisorbed precursor and byproduct molecules on the efficient chemical adsorption reaction between the precursors and reaction sites. To overcome the slow saturation and excessive use of the Ge precursor, the discrete feeding method (DFM), where HGeCl3 is supplied multiple times consecutively with subdivided pulse times, was adopted. DFM led to the saturation of the GeSe growth rate at a much shorter total injection time of the Ge precursor, and improved the film density and oxidation resistance properties. The GeSe film grown via DFM exhibited a short OTS time of ~40 ns, a ~107 ON/OFF current ratio, and ~104 selectivity. The OTS behavior was consistent with the modified Poole-Frenkel (PF) mechanism in the OFF state. In contrast, the similar GeSe film grown through the conventional ALD showed a low density and high vulnerability to oxidation, which prevented the OTS performance. The ALD method of GeSe films introduced here will contribute to the fabrication of a three-dimensionally integrated memory as a selector device for preventing sneak current. © 2018 IOP Publishing Ltd.

Binary Oxide p-n Heterojunction Piezoelectric Nanogenerators with an Electrochemically Deposited High p-Type Cu2O Layer.

PubMed

Baek, Seung Ki; Kwak, Sung Soo; Kim, Joo Sung; Kim, Sang Woo; Cho, Hyung Koun

2016-08-31

The high performance of ZnO-based piezoelectric nanogenerators (NGs) has been limited due to the potential screening from intrinsic electron carriers in ZnO. We have demonstrated a novel approach to greatly improve piezoelectric power generation by electrodepositing a high-quality p-type Cu2O layer between the piezoelectric semiconducting film and the metal electrode. The p-n heterojunction using only oxides suppresses the screening effect by forming an intrinsic depletion region, and thus sufficiently enhances the piezoelectric potential, compared to the pristine ZnO piezoelectric NG. Interestingly, a Sb-doped Cu2O layer has high mobility and low surface trap states. Thus, this doped layer is an attractive p-type material to significantly improve piezoelectric performance. Our results revealed that p-n junction NGs consisting of Au/ZnO/Cu2O/indium tin oxide with a Cu2O:Sb (cuprous oxide with a small amount of antimony) layer of sufficient thickness (3 μm) exhibit an extraordinarily high piezoelectric potential of 0.9 V and a maximum output current density of 3.1 μA/cm(2).

Atomic Layer Deposited Thin Films for Dielectrics, Semiconductor Passivation, and Solid Oxide Fuel Cells

NASA Astrophysics Data System (ADS)

Xu, Runshen

Atomic layer deposition (ALD) utilizes sequential precursor gas pulses to deposit one monolayer or sub-monolayer of material per cycle based on its self-limiting surface reaction, which offers advantages, such as precise thickness control, thickness uniformity, and conformality. ALD is a powerful means of fabricating nanoscale features in future nanoelectronics, such as contemporary sub-45 nm metal-oxide-semiconductor field effect transistors, photovoltaic cells, near- and far-infrared detectors, and intermediate temperature solid oxide fuel cells. High dielectric constant, kappa, materials have been recognized to be promising candidates to replace traditional SiO2 and SiON, because they enable good scalability of sub-45 nm MOSFET (metal-oxide-semiconductor field-effect transistor) without inducing additional power consumption and heat dissipation. In addition to high dielectric constant, high-kappa materials must meet a number of other requirements, such as low leakage current, high mobility, good thermal and structure stability with Si to withstand high-temperature source-drain activation annealing. In this thesis, atomic layer deposited Er2O3 doped TiO2 is studied and proposed as a thermally stable amorphous high-kappa dielectric on Si substrate. The stabilization of TiO2 in its amorphous state is found to achieve a high permittivity of 36, a hysteresis voltage of less than 10 mV, and a low leakage current density of 10-8 A/cm-2 at -1 MV/cm. In III-V semiconductors, issues including unsatisfied dangling bonds and native oxides often result in inferior surface quality that yields non-negligible leakage currents and degrades the long-term performance of devices. The traditional means for passivating the surface of III-V semiconductors are based on the use of sulfide solutions; however, that only offers good protection against oxidation for a short-term (i.e., one day). In this work, in order to improve the chemical passivation efficacy of III-V semiconductors, ultra-thin layer of encapsulating ZnS is coated on the surface of GaSb and GaSb/InAs substrates. The 2 nm-thick ZnS film is found to provide a long-term protection against reoxidation for one order and a half longer times than prior reported passivation likely due to its amorphous structure without pinholes. Finally, a combination of binary ALD processes is developed and demonstrated for the growth of yttria-stabilized zirconia films using alkylamido-cyclopentadiengyls zirconium and tris(isopropyl-cyclopentadienyl)yttrium, as zirconium and yttrium precursors, respectively, with ozone being the oxidant. The desired cubic structure of YSZ films is apparently achieved after post-deposition annealing. Further, platinum is atomic layer deposited as electrode on YSZ (8 mol% of Yttria) within the same system. In order to control the morphology of as-deposited Pt thin structure, the nucleation behavior of Pt on amorphous and cubic YSZ is investigated. Three different morphologies of Pt are observed, including nanoparticle, porous and dense films, which are found to depend on the ALD cycle number and the structure and morphology of they underlying ALD YSZ films.

Effects of substrate temperature on properties of pulsed dc reactively sputtered tantalum oxide films

NASA Astrophysics Data System (ADS)

Jain, Pushkar; Juneja, Jasbir S.; Bhagwat, Vinay; Rymaszewski, Eugene J.; Lu, Toh-Ming; Cale, Timothy S.

2005-05-01

The effects of substrate heating on the stoichiometry and the electrical properties of pulsed dc reactively sputtered tantalum oxide films over a range of film thickness (0.14 to 5.4 μm) are discussed. The film stoichiometry, and hence the electrical properties, of tantalum oxide films; e.g., breakdown field, leakage current density, dielectric constant, and dielectric loss are compared for two different cases: (a) when no intentional substrate/film cooling is provided, and (b) when the substrate is water cooled during deposition. All other operating conditions are the same, and the film thickness is directly related to deposition time. The tantalum oxide films deposited on the water-cooled substrates are stoichiometric, and exhibit excellent electrical properties over the entire range of film thickness. ``Noncooled'' tantalum oxide films are stoichiometric up to ~1 μm film thickness, beyond that the deposited oxide is increasingly nonstoichiometric. The presence of partially oxidized Ta in thicker (>~1 μm) noncooled tantalum oxide films causes a lower breakdown field, higher leakage current density, higher apparent dielectric constant, and dielectric loss. The growth of nonstoichiometric tantalum oxide in thicker noncooled films is attributed to decreased surface oxygen concentration due to oxygen recombination and desorption at higher film temperatures (>~100 °C). The quantitative results presented reflect experience with a specific piece of equipment; however, the procedures presented can be used to characterize deposition processes in which film stoichiometry can change.

Solution-Processed Gallium–Tin-Based Oxide Semiconductors for Thin-Film Transistors

PubMed Central

Zhang, Xue; Lee, Hyeonju; Kim, Jungwon; Kim, Eui-Jik; Park, Jaehoon

2017-01-01

We investigated the effects of gallium (Ga) and tin (Sn) compositions on the structural and chemical properties of Ga–Sn-mixed (Ga:Sn) oxide films and the electrical properties of Ga:Sn oxide thin-film transistors (TFTs). The thermogravimetric analysis results indicate that solution-processed oxide films can be produced via thermal annealing at 500 °C. The oxygen deficiency ratio in the Ga:Sn oxide film increased from 0.18 (Ga oxide) and 0.30 (Sn oxide) to 0.36, while the X-ray diffraction peaks corresponding to Sn oxide significantly reduced. The Ga:Sn oxide film exhibited smaller grains compared to the nanocrystalline Sn oxide film, while the Ga oxide film exhibited an amorphous morphology. We found that the electrical properties of TFTs significantly improve by mixing Ga and Sn. Here, the optimum weight ratio of the constituents in the mixture of Ga and Sn precursor sols was determined to be 1.0:0.9 (Ga precursor sol:Sn precursor sol) for application in the solution-processed Ga:Sn oxide TFTs. In addition, when the Ga(1.0):Sn(0.9) oxide film was thermally annealed at 900 °C, the field-effect mobility of the TFT was notably enhanced from 0.02 to 1.03 cm2/Vs. Therefore, the mixing concentration ratio and annealing temperature are crucial for the chemical and morphological properties of solution-processed Ga:Sn oxide films and for the TFT performance. PMID:29283408

Condensation of binary mixtures on horizontal tubes

NASA Astrophysics Data System (ADS)

Büchner, A.; Reif, A.; Rehfeldt, S.; Klein, H.

2017-12-01

The two most common models to describe the condensation of binary mixtures are the equilibrium model by Silver (Trans Inst Chem Eng 25:30-42, 1947) and the film model by Colburn and Drew (Transactions of the American Institute of Chemical Engineers 33:197-215, 1937), which is stated by Webb et al. (Int J Heat Mass Transf 39:3147-3156, 1996) as more accurate. The film model describes the outer heat transfer coefficient by subdividing it into two separate resistances against the heat transfer. The resistance of the liquid condensate film on the tube can be calculated with equations for the condensation of pure substances for the analogous flow pattern and geometry using the property data of the mixture. The resistance in the gas phase can be described by a thermodynamic parameter Z and the single phase heat transfer coefficient α G . In this work measurements for condensation of the binary mixtures n-pentane/iso-octane and iso-propanol/water on horizontal tubes for free convection are carried out. The obtained results are compared with the film model by Colburn and Drew (Transactions of the American Institute of Chemical Engineers 33:197-215, 1937). The comparison shows a rather big deviation between the theoretical model and the experimental results. To improve the prediction quality an own model based on dimensionless numbers is proposed, which describes the experimental results of this work significantly better than the film model.

Micro/nanostructured porous Fe-Ni binary oxide and its enhanced arsenic adsorption performances.

PubMed

Liu, Shengwen; Kang, Shenghong; Wang, Guozhong; Zhao, Huijun; Cai, Weiping

2015-11-15

A simple method is presented to synthesize micro/nano-structured Fe-Ni binary oxides based on co-precipitation and subsequent calcination. It has been found that the Fe-Ni binary oxides are composed of the porous microsized aggregates built with nanoparticles. When the atomic ratio of Fe to Ni is 2 to 1 the binary oxide is the micro-scaled aggregates consisting of the ultrafine NiFe2O4 nanoparticles with 3-6nm in size, and shows porous structure with pore diameter of 3nm and a specific surface area of 245m(2)g(-1). Such material is of abundant surface functional groups and has exhibited high adsorption performance to As(III) and As(V). The kinetic adsorption can be described by pseudo-second order model and the isothermal adsorption is subject to Langmuir model. The maximum adsorption capacity on such Fe-Ni porous binary oxide is up to 168.6mgg(-1) and 90.1mgg(-1) for As(III) and As(V), respectively, which are much higher than the arsenic adsorption capacity for most commercial adsorbents. Such enhanced adsorption ability for this material is mainly attributed to its porous structure and high specific surface area as well as the abundant surface functional groups. Further experiments have revealed that the influence of the anions such as sulfate, carbonate, and phosphate, which commonly co-exist in water, on the arsenic adsorption is insignificant, exhibiting strong adsorption selectivity to arsenic. This micro/nano-structured porous Fe-Ni binary oxide is hence of good practicability to be used as a highly efficient adsorbent for arsenic removal from the real arsenic-contaminated waters. Copyright © 2015 Elsevier Inc. All rights reserved.

The disclosed transformation of pre-sputtered Ti films into nanoparticles via controlled thermal oxidation

NASA Astrophysics Data System (ADS)

Awad, M. A.; Raaif, M.

2018-05-01

Nanoparticles of TiO2 were successfully prepared from pre-sputtered Ti films using the controlled thermal oxidation. The effect of oxidation temperature on structural, morphological and optical properties in addition to photocatalysis activity of the sputtered films was tested and explained. Analysis of XRD and EDAX elucidated the enhancement in crystallization and oxygen content with the increase of oxidation temperature. SEM depicted the formation of very fine nanoparticles with no specific border on the films oxidized at 550 and 600 °C, whilst crystallites with larger size of approximately from 16 to 23 nm have been observed for the film oxidized at 650 °C. Both optical transmission and refractive index were increased with increasing the oxidation temperature. A red shift in the absorption edge was obtained for the films oxidized at 650 °C compared to that oxidized at 600 °C. The photocatalysis tests demonstrated the priority of 600 °C nanoparticle films to decompose methyl orange (MO) more than 650 °C treated film.

Preparation of the porous cerium dioxide film by two-step anodization and heat treating method

NASA Astrophysics Data System (ADS)

Liu, Xiaozhen; Zhu, Bolun; Liu, Yuze; Wang, Shanshan; Chen, Jie; Wang, Xiaoyu

2017-12-01

The porous cerium dioxide films were prepared with cerium foils as raw materials by two-step anodization and heat treating method. The anodic cerium oxide films were heat treated in 25∼400°C respectively. The cerium dioxide films were characterized with X-ray diffraction (XRD), Fourier transform infrared (FTIR) techniques, energy-dispersive analyses of X-ray (EDAX) and scanning electron microcopy (SEM), respectively. The anodic cerium oxide film is composed of Ce(OH)3, CeO2 and Ce2O3. When the anodic cerium oxide films were heat treated in 300°C∼400°C for 2h, Ce(OH)3 and Ce2O3 in the anodic cerium oxide films may be converted to CeO2, and the heat treated anodic cerium oxide films are the cerium dioxide films. Water, ethylene glycol and CO2 are adsorbed in the anodic cerium oxide film. The adsorbing water, ethylene glycol and CO2 in the anodic cerium oxide film are removed at 300°C. The cerium dioxide film has strong absorption in the range of 1600∼4000cm-1. The structure of the cerium dioxide film is the porous.

A Structural Molar Volume Model for Oxide Melts Part I: Li2O-Na2O-K2O-MgO-CaO-MnO-PbO-Al2O3-SiO2 Melts—Binary Systems

NASA Astrophysics Data System (ADS)

Thibodeau, Eric; Gheribi, Aimen E.; Jung, In-Ho

2016-04-01

A structural molar volume model was developed to accurately reproduce the molar volume of molten oxides. As the non-linearity of molar volume is related to the change in structure of molten oxides, the silicate tetrahedral Q-species, calculated from the modified quasichemical model with an optimized thermodynamic database, were used as basic structural units in the present model. Experimental molar volume data for unary and binary melts in the Li2O-Na2O-K2O-MgO-CaO-MnO-PbO-Al2O3-SiO2 system were critically evaluated. The molar volumes of unary oxide components and binary Q-species, which are model parameters of the present structural model, were determined to accurately reproduce the experimental data across the entire binary composition in a wide range of temperatures. The non-linear behavior of molar volume and thermal expansivity of binary melt depending on SiO2 content are well reproduced by the present model.

Fabrication of highly textured lithium cobalt oxide films by rapid thermal annealing

DOEpatents

Bates, John B.

2003-04-29

Systems and methods are described for fabrication of highly textured lithium cobalt oxide films by rapid thermal annealing. A method of forming a lithium cobalt oxide film includes depositing a film of lithium cobalt oxide on a substrate; rapidly heating the film of lithium cobalt oxide to a target temperature; and maintaining the film of lithium cobalt oxide at the target temperature for a target annealing time of at most, approximately 60 minutes. The systems and methods provide advantages because they require less time to implement and are, therefore less costly than previous techniques.

Fabrication of highly textured lithium cobalt oxide films by rapid thermal annealing

DOEpatents

Bates, John B.

2002-01-01

Systems and methods are described for fabrication of highly textured lithium cobalt oxide films by rapid thermal annealing. A method of forming a lithium cobalt oxide film includes depositing a film of lithium cobalt oxide on a substrate; rapidly heating the film of lithium cobalt oxide to a target temperature; and maintaining the film of lithium cobalt oxide at the target temperature for a target annealing time of at most, approximately 60 minutes. The systems and methods provide advantages because they require less time to implement and are, therefore less costly than previous techniques.

Fabrication of highly textured lithium cobalt oxide films by rapid thermal annealing

DOEpatents

Bates, John B.

2003-05-13

Systems and methods are described for fabrication of highly textured lithium cobalt oxide films by rapid thermal annealing. A method of forming a lithium cobalt oxide film includes depositing a film of lithium cobalt oxide on a substrate; rapidly heating the film of lithium cobalt oxide to a target temperature; and maintaining the film of lithium cobalt oxide at the target temperature for a target annealing time of at most, approximately 60 minutes. The systems and methods provide advantages because they require less time to implement and are, therefore less costly than previous techniques.

Structural, electronic and chemical properties of metal/oxide and oxide/oxide interfaces and thin film structures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lad, Robert J.

1999-12-14

This project focused on three different aspects of oxide thin film systems: (1) Model metal/oxide and oxide/oxide interface studies were carried out by depositing ultra-thin metal (Al, K, Mg) and oxide (MgO, AlO{sub x}) films on TiO{sub 2}, NiO and {alpha}-Al{sub 2}O{sub 3} single crystal oxide substrates. (2) Electron cyclotron resonance (ECR) oxygen plasma deposition was used to fabricate AlO{sub 3} and ZrO{sub 2} films on sapphire substrates, and film growth mechanisms and structural characteristics were investigated. (3) The friction and wear characteristics of ZrO{sub 2} films on sapphire substrates in unlubricated sliding contact were studied and correlated with filmmore » microstructure. In these studies, thin film and interfacial regions were characterized using diffraction (RHEED, LEED, XRD), electron spectroscopies (XPS, UPS, AES), microscopy (AFM) and tribology instruments (pin-on-disk, friction microprobe, and scratch tester). By precise control of thin film microstructure, an increased understanding of the structural and chemical stability of interface regions and tribological performance of ultra-thin oxide films was achieved in these important ceramic systems.« less

Doubly-excited pulse-waves on flowing liquid films: experiments and numerical simulations

NASA Astrophysics Data System (ADS)

Adebayo, Idris; Xie, Zhihua; Che, Zhizhao; Wray, Alex; Matar, Omar

2016-11-01

The interaction patterns between doubly-excited pulse waves on a flowing liquid film are studied both experimentally and numerically. The flowing film is constituted on an inclined glass substrate while pulse-waves are excited on the film surface by means of a solenoid valve connected to a relay which receives signals from customised Matlab routines. The effect of varying the system parameters i.e. film flow rate, inter-pulse interval and substrate inclination angle on the pulse interaction patterns are then studied. Results show that different interaction patterns exist for these binary pulses; which include a singular behaviour, complete merger, partial merger and total non-coalescence. A regime map of these patterns is then plotted for each inclination angles examined, based on the film Re and the inter-pulse interval. Finally, the individual effect of the system parameters on the merging distance of these binary pulses in the merger mode is then studied and the results validated using both numerical simulations and mathematical modelling. Funding from the Nigerian Government (for Idris Adebayo), and the EPSRC through a programme Grant MEMPHIS (EP/K003976/1) gratefully acknowledged.

The influence of oxidation time on the properties of oxidized zinc films

NASA Astrophysics Data System (ADS)

Rambu, A. P.

2012-09-01

The effect of oxidation time on the structural characteristics and electronic transport mechanism of zinc oxide thin films prepared by thermal oxidation, have been investigated. Zinc metallic films were deposited by thermal evaporation under vacuum, the subsequent oxidation of Zn films being carried out in open atmosphere. XRD and AFM analysis indicate that obtained films posses a polycrystalline structure, the crystallites having a preferential orientation. Structural analysis reveals that microstructure of the films (crystallite size, surface roughness, internal stress) is depending on the oxidation time of metallic films. The electrical behavior of ZnO films was investigated, during a heat treatment (two heating/cooling cycles). It was observed that after the first heating, the temperature dependences of electrical conductivity become reversible. Mott variable range hopping model was proposed to analyze the temperature dependence of the electrical conductivity, in low temperature ranges. Values of some characteristic parameters were calculated.

Electro-mechanical coupling of semiconductor film grown on stainless steel by oxidation

NASA Astrophysics Data System (ADS)

Lin, M. C.; Wang, G.; Guo, L. Q.; Qiao, L. J.; Volinsky, Alex A.

2013-09-01

Electro-mechanical coupling phenomenon in oxidation film on stainless steel has been discovered by using current-sensing atomic force microscopy, along with the I-V curves measurements. The oxidation films exhibit either ohmic, n-type, or p-type semiconductor properties, according to the obtained I-V curves. This technique allows characterizing oxidation films with high spatial resolution. Semiconductor properties of oxidation films must be considered as additional stress corrosion cracking mechanisms.

Process for depositing epitaxial alkaline earth oxide onto a substrate and structures prepared with the process

DOEpatents

McKee, Rodney A.; Walker, Frederick J.

1996-01-01

A process and structure involving a silicon substrate utilize molecular beam epitaxy (MBE) and/or electron beam evaporation methods and an ultra-high vacuum facility to grow a layup of epitaxial alkaline earth oxide films upon the substrate surface. By selecting metal constituents for the oxides and in the appropriate proportions so that the lattice parameter of each oxide grown closely approximates that of the substrate or base layer upon which oxide is grown, lattice strain at the film/film or film/substrate interface of adjacent films is appreciably reduced or relieved. Moreover, by selecting constituents for the oxides so that the lattice parameters of the materials of adjacent oxide films either increase or decrease in size from one parameter to another parameter, a graded layup of films can be grown (with reduced strain levels therebetween) so that the outer film has a lattice parameter which closely approximates that of, and thus accomodates the epitaxial growth of, a pervoskite chosen to be grown upon the outer film.

Electrocatalyst for alcohol oxidation in fuel cells

DOEpatents

Adzic, Radoslav R.; Marinkovic, Nebojsa S.

2001-01-01

Binary and ternary electrocatalysts are provided for oxidizing alcohol in a fuel cell. The binary electrocatalyst includes 1) a substrate selected from the group consisting of NiWO.sub.4 or CoWO.sub.4 or a combination thereof, and 2) Group VIII noble metal catalyst supported on the substrate. The ternary electrocatalyst includes 1) a substrate as described above, and 2) a catalyst comprising Group VIII noble metal, and ruthenium oxide or molybdenum oxide or a combination thereof, said catalyst being supported on said substrate.

Study of earth abundant tco and absorber materials for photovoltaic applications

NASA Astrophysics Data System (ADS)

Prabhakar, Tejas

In order to make photovoltaic power generation a sustainable venture, it is necessary to use cost-effective materials in the manufacture of solar cells. In this regard, AZO (Aluminum doped Zinc Oxide) and CZTS (Copper Zinc Tin Sulfide) have been studied for their application in thin film solar cells. While AZO is a transparent conducting oxide, CZTS is a photovoltaic absorber. Both AZO and CZTS consist of earth abundant elements and are non-toxic in nature. Highly transparent and conductive AZO thin films were grown using RF sputtering. The influence of deposition parameters such as working pressure, RF power, substrate temperature and flow rate on the film characteristics was investigated. The as-grown films had a high degree of preferred orientation along the (002) direction which enhanced at lower working pressures, higher RF powers and lower substrate temperatures. Williamson-Hall analysis on the films revealed that as the working pressure was increased, the nature of stress and strain gradually changed from being compressive to tensile. The fall in optical transmission of the films was a consequence of free carrier absorption resulting from enhanced carrier density due to incorporation of Al atoms or oxygen vacancies. The optical and electrical properties of the films were described well by the Burstein-Moss effect. CZTS absorber layers were grown using ultrasonic spray pyrolysis at a deposition temperature of 350 C and subsequently annealed in a sulfurization furnace. Measurements from XRD and Raman spectra confirmed the presence of pure single phase Cu2ZnSnS4. Texture analysis of as-deposited and annealed CZTS films indicated that the (112) plane which is characteristic of the kesterite phase was preferred. The grain size increased from 50 nm to 100 nm on conducting post-deposition annealing. CZTS films with stoichiometric composition yielded a band gap of 1.5 eV, which is optimal for solar energy conversion. The variation of tin in the film changed its resistivity by several orders of magnitude and subsequently the tin free ternary chalcogenide Cu2ZnS2 having very low resistivity was obtained. By carefully optimization of concentrations of tin, zinc and copper, a zinc-rich/tin-rich/copper-poor composition was found to be most suitable for solar cell applications. Etching of CZTS films using KCN solution reduced their resistivity, possibly due to the elimination of binary copper sulfide phases. CZTS solar cells were fabricated both in the substrate and superstrate configurations.

Growth and characterization of single phase Cu{sub 2}O by thermal oxidation of thin copper films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Choudhary, Sumita; Sarma, J. V. N.; Gangopadhyay, Subhashis, E-mail: subhagan@yahoo.com

2016-04-13

We report a simple and efficient technique to form high quality single phase cuprous oxide films on glass substrate using thermal evaporation of thin copper films followed by controlled thermal oxidation in air ambient. Crystallographic analysis and oxide phase determination, as well as grain size distribution have been studied using X-ray diffraction (XRD) method, while scanning electron microscopy (SEM) has been utilized to investigate the surface morphology of the as grown oxide films. The formation of various copper oxide phases is found to be highly sensitive to the oxidation temperature and a crystalline, single phase cuprous oxide film can bemore » achieved for oxidation temperatures between 250°C to 320°C. Cu{sub 2}O film surface appeared in a faceted morphology in SEM imaging and a direct band gap of about 2.1 eV has been observed in UV-visible spectroscopy. X-ray photoelectron spectroscopy (XPS) confirmed a single oxide phase formation. Finally, a growth mechanism of the oxide film has also been discussed.« less

Development of biodegradable metaloxide/polymer nanocomposite films based on poly-ε-caprolactone and terephthalic acid.

PubMed

Varaprasad, Kokkarachedu; Pariguana, Manuel; Raghavendra, Gownolla Malegowd; Jayaramudu, Tippabattini; Sadiku, Emmanuel Rotimi

2017-01-01

The present investigation describes the development of metal-oxide polymer nanocomposite films from biodegradable poly-ε-caprolactone, disposed poly(ethylene terephthalate) oil bottles monomer and zinc oxide-copper oxide nanoparticles. The terephthalic acid and zinc oxide-copper oxide nanoparticles were synthesized by using a temperature-dependent precipitation technique and double precipitation method, respectively. The terephthalic acid synthesized was confirmed by FTIR analysis and furthermore, it was characterized by thermal analysis. The as-prepared CuO-ZnO nanoparticles structure was confirmed by XRD analysis and its morphology was analyzed by SEM/EDS and TEM. Furthermore, the metal-oxide polymer nanocomposite films have excellent mechanical properties, with tensile strength and modulus better than pure films. The metal-oxide polymer nanocomposite films that were successfully developed show a relatively brighter colour when compared to CuO film. These new metal-oxide polymer nanocomposite films can replace many non-degradable plastics. The new metal-oxide polymer nanocomposite films developed are envisaged to be suitable for use in industrial and domestic packaging applications. Copyright © 2016 Elsevier B.V. All rights reserved.

Effect of annealing temperature on optical properties of binary zinc tin oxide nano-composite prepared by sol-gel route using simple precursors: structural and optical studies by DRS, FT-IR, XRD, FESEM investigations.

PubMed

Habibi, Mohammad Hossein; Mardani, Maryam

2015-02-25

Binary zinc tin oxide nano-composite was synthesized by a facile sol-gel method using simple precursors from the solutions consisting of zinc acetate, tin(IV) chloride and ethanol. Effect of annealing temperature on optical and structural properties was investigated using X-ray diffraction (XRD), diffuse reflectance spectra (DRS), field emission scanning electron microscopy (FESEM) and Fourier transform infrared spectroscopy (FTIR). XRD results revealed the existence of the ZnO and SnO2 phases. FESEM results showed that binary zinc tin oxide nano-composites ranges from 56 to 60 nm in diameter at 400°C and 500°C annealing temperatures respectively. The optical band gap was increased from 2.72 eV to 3.11 eV with the increasing of the annealing temperature. FTIR results confirmed the presence of zinc oxide and tin oxide and the broad absorption peaks at 3426 and 1602 cm(-1) can be ascribed to the vibration of absorptive water, and the absorption peaks at 546, 1038 and 1410 cm(-1) are due to the vibration of Zn-O or Sn-O groups in binary zinc tin oxide. Copyright © 2014 Elsevier B.V. All rights reserved.

Electric field cycling behavior of ferroelectric hafnium oxide.

PubMed

Schenk, Tony; Schroeder, Uwe; Pešić, Milan; Popovici, Mihaela; Pershin, Yuriy V; Mikolajick, Thomas

2014-11-26

HfO2 based ferroelectrics are lead-free, simple binary oxides with nonperovskite structure and low permittivity. They just recently started attracting attention of theoretical groups in the fields of ferroelectric memories and electrostatic supercapacitors. A modified approach of harmonic analysis is introduced for temperature-dependent studies of the field cycling behavior and the underlying defect mechanisms. Activation energies for wake-up and fatigue are extracted. Notably, all values are about 100 meV, which is 1 order of magnitude lower than for conventional ferroelectrics like lead zirconate titanate (PZT). This difference is mainly atttributed to the one to two orders of magnitude higher electric fields used for cycling and to the different surface to volume ratios between the 10 nm thin films in this study and the bulk samples of former measurements or simulations. Moreover, a new, analog-like split-up effect of switching peaks by field cycling is discovered and is explained by a network model based on memcapacitive behavior as a result of defect redistribution.

Effect of negative bias on the composition and structure of the tungsten oxide thin films deposited by magnetron sputtering

NASA Astrophysics Data System (ADS)

Wang, Meihan; Lei, Hao; Wen, Jiaxing; Long, Haibo; Sawada, Yutaka; Hoshi, Yoichi; Uchida, Takayuki; Hou, Zhaoxia

2015-12-01

Tungsten oxide thin films were deposited at room temperature under different negative bias voltages (Vb, 0 to -500 V) by DC reactive magnetron sputtering, and then the as-deposited films were annealed at 500 °C in air atmosphere. The crystal structure, surface morphology, chemical composition and transmittance of the tungsten oxide thin films were characterized by X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), X-ray photoelectron spectroscopy (XPS) and UV-vis spectrophotometer. The XRD analysis reveals that the tungsten oxide films deposited at different negative bias voltages present a partly crystallized amorphous structure. All the films transfer from amorphous to crystalline (monoclinic + hexagonal) after annealing 3 h at 500 °C. Furthermore, the crystallized tungsten oxide films show different preferred orientation. The morphology of the tungsten oxide films deposited at different negative bias voltages is consisted of fine nanoscale grains. The grains grow up and conjunct with each other after annealing. The tungsten oxide films deposited at higher negative bias voltages after annealing show non-uniform special morphology. Substoichiometric tungsten oxide films were formed as evidenced by XPS spectra of W4f and O1s. As a result, semi-transparent films were obtained in the visible range for all films deposited at different negative bias voltages.

Synthesis and characterization of binary titania-silica mixed oxides

NASA Astrophysics Data System (ADS)

Budhi, Sridhar

A series of binary titania-silica mixed oxides were synthesized by the sol-gel method at room temperature. The mixed oxides were prepared that involved the hydrolysis of titanium isopropoxide and tetraethylorthosilicate (TEOS) by co-solvent induced gelation usually in acidic media. The resulting gels were dried, calcined and then characterized by powder X-ray diffractometric studies, nitrogen sorption studies (at 77K), diffuse reflectance spectroscopy, Raman microscopy and transmission electron microscopic studies. The nitrogen sorption studies indicate that the specific surface areas, pore volume, pore diameter and pore size distribution of the mixed oxides were substantially enhanced when non-polar solvents such as toluene, p-xylene or mesitylene were added as co-solvents to the synthesis gel. Transmission electron microscopic (TEM) studies confirm the results obtained from the nitrogen sorption studies. Our results indicate that we can obtain binary metal oxides possessing high surface area and large pore volumes with tunable pore size distribution at room temperature. Photocatalytic evaluation of the mixed oxides is currently in progress.

Enhancing Soundtracks From Old Movies

NASA Technical Reports Server (NTRS)

Frazer, Robert E.

1992-01-01

Proposed system enhances soundtracks of old movies. Signal on optical soundtrack of film digitized and processed to reduce noise and improve quality; timing signals added, and signal recorded on compact disk. Digital comparator and voltage-controlled oscillator synchronizes speed of film-drive motor and compact disk motor. Frame-coded detector reads binary frame-identifying marks on film. Digital comparator generates error signal if marks on film do not match those on compact disk.

Atomic-scale visualization of oxide thin-film surfaces.

PubMed

Iwaya, Katsuya; Ohsawa, Takeo; Shimizu, Ryota; Okada, Yoshinori; Hitosugi, Taro

2018-01-01

The interfaces of complex oxide heterostructures exhibit intriguing phenomena not observed in their constituent materials. The oxide thin-film growth of such heterostructures has been successfully controlled with unit-cell precision; however, atomic-scale understandings of oxide thin-film surfaces and interfaces have remained insufficient. We examined, with atomic precision, the surface and electronic structures of oxide thin films and their growth processes using low-temperature scanning tunneling microscopy. Our results reveal that oxide thin-film surface structures are complicated in contrast to the general perception and that atomically ordered surfaces can be achieved with careful attention to the surface preparation. Such atomically ordered oxide thin-film surfaces offer great opportunities not only for investigating the microscopic origins of interfacial phenomena but also for exploring new surface phenomena and for studying the electronic states of complex oxides that are inaccessible using bulk samples.

Tse computers. [ultrahigh speed optical processing for two dimensional binary image

NASA Technical Reports Server (NTRS)

Schaefer, D. H.; Strong, J. P., III

1977-01-01

An ultra-high-speed computer that utilizes binary images as its basic computational entity is being developed. The basic logic components perform thousands of operations simultaneously. Technologies of the fiber optics, display, thin film, and semiconductor industries are being utilized in the building of the hardware.

Spectroscopic ellipsometry investigation of the optical properties of graphene oxide dip-coated on magnetron sputtered gold thin films

NASA Astrophysics Data System (ADS)

Politano, Grazia Giuseppina; Vena, Carlo; Desiderio, Giovanni; Versace, Carlo

2018-02-01

Despite intensive investigations on graphene oxide-gold nanocomposites, the interaction of graphene oxide sheets with magnetron sputtered gold thin films has not been studied yet. The optical constants of graphene oxide thin films dip-coated on magnetron sputtered gold thin films were determined by spectroscopic ellipsometry in the [300-1000] wavelength range. Moreover, the morphologic properties of the samples were investigated by SEM analysis. Graphene oxide absorbs mainly in the ultraviolet region, but when it is dip-coated on magnetron sputtered gold thin films, its optical constants show dramatic changes, becoming absorbing in the visible region, with a peak of the extinction coefficient at 3.1 eV. Using magnetron sputtered gold thin films as a substrate for graphene oxide thin films could therefore be the key to enhance graphene oxide optical sheets' properties for several technological applications, preserving their oxygen content and avoiding the reduction process.

Synthesis, characterization and oxidation of metallic cobalt (Co) thin film into semiconducting cobalt oxide (Co3O4)thin film using microwave plasma CVD

NASA Astrophysics Data System (ADS)

Rahman Ansari, Akhalakur; Hussain, Shahir; Imran, Mohd; Abdel-wahab, M. Sh; Alshahrie, Ahmed

2018-06-01

The pure cobalt thin film was deposited on the glass substrate by using DC magnetron sputtering and then exposed to microwave assist oxygen plasma generated in microwave plasma CVD. The oxidation process of Co thin film into Co3O4 thin films with different microwave power and temperature were studied. The influences of microwave power, temperature and irradiation time were investigated on the morphology and particle size of oxide thin films. The crystal structure, chemical conformation, morphologies and optical properties of oxidized Co thin films (Co3O4) were studied by using x-ray diffraction (XRD), Field emission scanning electron microscopy (FESEM), Raman Spectroscopy and UV–vis Spectroscopy. The data of these films showed complete oxidation pure metallic cobalt (Co) into cobalt oxide (Co3O4). The optical properties were studied for calculating the direct band gaps which ranges from 1.35 to 1.8 eV.

Evolution of insoluble eutectic Si particles in anodic oxidation films during adipic-sulfuric acid anodizing processes of ZL114A aluminum alloys

NASA Astrophysics Data System (ADS)

Hua, Lei; Liu, Jian-hua; Li, Song-mei; Yu, Mei; Wang, Lei; Cui, Yong-xin

2015-03-01

The effects of insoluble eutectic Si particles on the growth of anodic oxide films on ZL114A aluminum alloy substrates were investigated by optical microscopy (OM) and scanning electron microscopy (SEM). The anodic oxidation was performed at 25°C and a constant voltage of 15 V in a solution containing 50 g/L sulfuric acid and 10 g/L adipic acid. The thickness of the formed anodic oxidation film was approximately 7.13 μm. The interpore distance and the diameters of the major pores in the porous layer of the film were within the approximate ranges of 10-20 nm and 5-10 nm, respectively. Insoluble eutectic Si particles strongly influenced the morphology of the anodic oxidation films. The anodic oxidation films exhibited minimal defects and a uniform thickness on the ZL114A substrates; in contrast, when the front of the oxide oxidation films encountered eutectic Si particles, defects such as pits and non-uniform thickness were observed, and pits were observed in the films.

Mechanical properties of bioplastics cassava starch film with Zinc Oxide nanofiller as reinforcement

NASA Astrophysics Data System (ADS)

Harunsyah; Yunus, M.; Fauzan, Reza

2017-06-01

This study focuses on investigating the influence of zinc oxide nanofiller on the mechanical properties of bioplastic cassava starch films. Bioplastic cassava starch film-based zinc oxide reinforced composite biopolymeric films were prepared by casting technique. The content of zinc oxide in the bioplastic films was varied from 0.2%, 0.4%, 0.6%, 0.8% and 1.0% (w/w) by weight of starch. Surface morphologies of the composites bioplastic films were examined by scanning electron microscope (SEM).The result showed that the Tensile strength (TS) was improved significantly with the additional of zinc oxide but the elongation at break (EB %) of the composites was decreased. The maximum tensile strength obtained was 22.30 kgf / mm on the additional of zinc oxide by 0.6% and plastilizer by 25%. Based on data of FTIR, the produced film plastic did not change the group function and it can be concluded that theinteraction in film plastic produced was only a physical interaction. Biodegradable plastic film based on cassava starch-zinc oxide and plasticizer glycerol showed that interesting mechanical properties being transparent, clear, homogeneous, flexible, and easily handled.

Anodic Oxidation in Aluminum Electrode by Using Hydrated Amorphous Aluminum Oxide Film as Solid Electrolyte under High Electric Field.

PubMed

Yao, Manwen; Chen, Jianwen; Su, Zhen; Peng, Yong; Zou, Pei; Yao, Xi

2016-05-04

Dense and nonporous amorphous aluminum oxide (AmAO) film was deposited onto platinized silicon substrate by sol-gel and spin coating technology. The evaporated aluminum film was deposited onto the AmAO film as top electrode. The hydrated AmAO film was utilized as a solid electrolyte for anodic oxidation of the aluminum electrode (Al) film under high electric field. The hydrated AmAO film was a high efficiency electrolyte, where a 45 nm thick Al film was anodized completely on a 210 nm thick hydrated AmAO film. The current-voltage (I-V) characteristics and breakdown phenomena of a dry and hydrated 210 nm thick AmAO film with a 150 nm thick Al electrode pad were studied in this work. Breakdown voltage of the dry and hydrated 210 nm thick AmAO film were 85 ± 3 V (405 ± 14 MV m(-1)) and 160 ± 5 V (762 ± 24 MV m(-1)), respectively. The breakdown voltage of the hydrated AmAO film increased about twice, owing to the self-healing behavior (anodic oxidation reaction). As an intuitive phenomenon of the self-healing behavior, priority anodic oxidation phenomena was observed in a 210 nm thick hydrated AmAO film with a 65 nm thick Al electrode pad. The results suggested that self-healing behavior (anodic oxidation reaction) was occurring nearby the defect regions of the films during I-V test. It was an effective electrical self-healing method, which would be able to extend to many other simple and complex oxide dielectrics and various composite structures.

Demonstration of high-performance p-type tin oxide thin-film transistors using argon-plasma surface treatments

NASA Astrophysics Data System (ADS)

Bae, Sang-Dae; Kwon, Soo-Hun; Jeong, Hwan-Seok; Kwon, Hyuck-In

2017-07-01

In this work, we investigated the effects of low-temperature argon (Ar)-plasma surface treatments on the physical and chemical structures of p-type tin oxide thin-films and the electrical performance of p-type tin oxide thin-film transistors (TFTs). From the x-ray photoelectron spectroscopy measurement, we found that SnO was the dominant phase in the deposited tin oxide thin-film, and the Ar-plasma treatment partially transformed the tin oxide phase from SnO to SnO2 by oxidation. The resistivity of the tin oxide thin-film increased with the plasma-treatment time because of the reduced hole concentration. In addition, the root-mean-square roughness of the tin oxide thin-film decreased as the plasma-treatment time increased. The p-type oxide TFT with an Ar-plasma-treated tin oxide thin-film exhibited excellent electrical performance with a high current on-off ratio (5.2 × 106) and a low off-current (1.2 × 10-12 A), which demonstrates that the low-temperature Ar-plasma treatment is a simple and effective method for improving the electrical performance of p-type tin oxide TFTs.

Photochemical metal organic deposition of metal oxides

NASA Astrophysics Data System (ADS)

Law, Wai Lung (Simon)

This thesis pertains to the study of the deposition of metal oxide thin films via the process of Photochemical Metal Organic Deposition (PMOD). In this process, an amorphous metal organic precursor thin film is subjected to irradiation under ambient conditions. Fragmentation of the metal precursor results from the photoreaction, leading to the formation of metal oxide thin films in the presence of oxygen. The advantage of PMOD lies in its ability to perform lithography of metal oxide thin film without the application of photoresist. The metal organic precursor can be imaged directly by photolysis through a lithography mask under ambient conditions. Thus the PMOD process provides an attractive alternative to the conventional VLSI fabrication process. Metal carboxylates and metal acetylacetonates complexes were used as the precursors for PMOD process in this thesis. Transition metal carboxylate and metal acetylacetonate complexes have shown previously that when deposited as amorphous thin films, they will undergo fragmentation upon photolysis, leading to the formation of metal oxide thin films under ambient conditions. In this thesis, the formation of main group metal oxides of aluminum, indium and tin, as well as the formation of rare-earth metal oxides of cerium and europium by PMOD from its corresponding metal organic precursor will be presented. The nature of the photoreactions as well as the properties of the thin films deposited by PMOD will be investigated. Doped metal oxide thin films can also be prepared using the PMOD process. By mixing the metal precursors prior to deposition in the desired ratio, precursor films containing more than one metal precursor can be obtained. Mixed metal oxide thin films corresponding to the original metal ratio, in the precursor mixture, can be obtained upon photolysis under ambient conditions. In this thesis, the properties of doped metal oxide thin films of europium doped aluminum oxide as well as tin doped indium oxide thin films will also be presented.

Periodic oxidation for fabricating titanium oxynitride thin films via atomic layer deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Iwashita, Shinya, E-mail: shinya.iwashita@tel.com; Aoyama, Shintaro; Nasu, Masayuki

2016-01-15

This paper demonstrates thermal atomic layer deposition (ALD) combined with periodic oxidation for synthesizing titanium oxynitride (TiON) thin films. The process used a typical ALD reactor for the synthesis of titanium nitride (TiN) films wherein oxygen was supplied periodically between the ALD-TiN cycles. The great advantage of the process proposed here was that it allowed the TiN films to be oxidized efficiently. Also, a uniform depth profile of the oxygen concentration in the films could be obtained by tuning the oxidation conditions, allowing the process to produce a wide variety of TiON films. The resistivity measurement is a convenient methodmore » to confirm the reproducibility of metal film fabrication but may not be applicable for TiON films depending upon the oxidation condition because the films can easily turn into insulators when subjected to periodic oxidation. Therefore, an alternative reproducibility confirmation method was required. In this study, spectroscopic ellipsometry was applied to monitor the variation of TiON films and was able to detect changes in film structures such as conductor–insulator transitions in the TiON films.« less

Differentiation of Chemical Components in a Binary Solvent Vapor Mixture Using Carbon/Polymer Composite-Based Chemiresistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Patel, Sanjay V.; Jenkins, Mark W.; Hughes, Robert C.

1999-07-19

We demonstrate a ''universal solvent sensor'' constructed from a small array of carbon/polymer composite chemiresistors that respond to solvents spanning a wide range of Hildebrand volubility parameters. Conductive carbon particles provide electrical continuity in these composite films. When the polymer matrix absorbs solvent vapors, the composite film swells, the average separation between carbon particles increases, and an increase in film resistance results, as some of the conduction pathways are broken. The adverse effects of contact resistance at high solvent concentrations are reported. Solvent vapors including isooctane, ethanol, dlisopropyhnethylphosphonate (DIMP), and water are correctly identified (''classified'') using three chemiresistors, their compositemore » coatings chosen to span the full range of volubility parameters. With the same three sensors, binary mixtures of solvent vapor and water vapor are correctly classified, following classification, two sensors suffice to determine the concentrations of both vapor components. Polyethylene vinylacetate and polyvinyl alcohol (PVA) are two such polymers that are used to classify binary mixtures of DIMP with water vapor; the PVA/carbon-particle-composite films are sensitive to less than 0.25{degree}A relative humidity. The Sandia-developed VERI (Visual-Empirical Region of Influence) technique is used as a method of pattern recognition to classify the solvents and mixtures and to distinguish them from water vapor. In many cases, the response of a given composite sensing film to a binary mixture deviates significantly from the sum of the responses to the isolated vapor components at the same concentrations. While these nonlinearities pose significant difficulty for (primarily) linear methods such as principal components analysis, VERI handles both linear and nonlinear data with equal ease. In the present study the maximum speciation accuracy is achieved by an array containing three or four sensor elements, with the addition of more sensors resulting in a measurable accuracy decrease.« less

Oxidizing annealing effects on VO2 films with different microstructures

NASA Astrophysics Data System (ADS)

Dou, Yan-Kun; Li, Jing-Bo; Cao, Mao-Sheng; Su, De-Zhi; Rehman, Fida; Zhang, Jia-Song; Jin, Hai-Bo

2015-08-01

Vanadium dioxide (VO2) films have been prepared by direct-current magnetron sputter deposition on m-, a-, and r-plane sapphire substrates. The obtained VO2 films display different microstructures depending on the orientation of sapphire substrates, i.e. mixed microstructure of striped grains and equiaxed grains on m-sapphire, big equiaxed grains on a-sapphire and fine-grained microstructure on r-sapphire. The VO2 films were treated by the processes of oxidation in air. The electric resistance and infrared transmittance of the oxidized films were characterized to examine performance characteristics of VO2 films with different microstructures in oxidation environment. The oxidized VO2 films on m-sapphire exhibit better electrical performance than the other two films. After air oxidization for 600 s at 450 °C, the VO2 films on m-sapphire show a resistance change of 4 orders of magnitude over the semiconductor-to-metal transition. The oxidized VO2 films on a-sapphire have the highest optical modulation efficiency in infrared region compared to other samples. The different performance characteristics of VO2 films are understood in terms of microstructures, i.e. grain size, grain shape, and oxygen vacancies. The findings reveal the correlation of microstructures and performances of VO2 films, and provide useful knowledge for the design of VO2 materials to different applications.

One-Step Printable Perovskite Films Fabricated under Ambient Conditions for Efficient and Reproducible Solar Cells.

PubMed

Jung, Yen-Sook; Hwang, Kyeongil; Heo, Youn-Jung; Kim, Jueng-Eun; Lee, Donmin; Lee, Cheol-Ho; Joh, Han-Ik; Yeo, Jun-Seok; Kim, Dong-Yu

2017-08-23

Despite the potential of roll-to-roll processing for the fabrication of perovskite films, the realization of highly efficient and reproducible perovskite solar cells (PeSCs) through continuous coating techniques and low-temperature processing is still challenging. Here, we demonstrate that efficient and reliable CH 3 NH 3 PbI 3 (MAPbI 3 ) films fabricated by a printing process can be achieved through synergetic effects of binary processing additives, N-cyclohexyl-2-pyrrolidone (CHP) and dimethyl sulfoxide (DMSO). Notably, these perovskite films are deposited from premixed perovskite solutions for facile one-step processing under a room-temperature and ambient atmosphere. The CHP molecules result in the uniform and homogeneous perovskite films even in the one-step slot-die system, which originate from the high boiling point and low vapor pressure of CHP. Meanwhile, the DMSO molecules facilitate the growth of perovskite grains by forming intermediate states with the perovskite precursor molecules. Consequently, fully printed PeSC based on the binary additive system exhibits a high PCE of 12.56% with a high reproducibility.

Atomistic modeling of metallic thin films by modified embedded atom method

NASA Astrophysics Data System (ADS)

Hao, Huali; Lau, Denvid

2017-11-01

Molecular dynamics simulation is applied to investigate the deposition process of metallic thin films. Eight metals, titanium, vanadium, iron, cobalt, nickel, copper, tungsten, and gold, are chosen to be deposited on the aluminum substrate. The second nearest-neighbor modified embedded atom method potential is adopted to predict their thermal and mechanical properties. When quantifying the screening parameters of the potential, the error for Young's modulus and coefficient of thermal expansion between the simulated results and the experimental measurements is less than 15%, demonstrating the reliability of the potential to predict metallic behaviors related to thermal and mechanical properties. A set of potential parameters which governs the interactions between aluminum and other metals in a binary system is also generated from ab initio calculation. The details of interfacial structures between the chosen films and substrate are successfully simulated with the help of these parameters. Our results indicate that the preferred orientation of film growth depends on the film crystal structure, and the inter-diffusion at the interface is correlated the cohesive energy parameter of potential for the binary system. Such finding provides an important basis to further understand the interfacial science, which contributes to the improvement of the mechanical properties, reliability and durability of films.

Development of sputtered CuSbS2 thin films grown by sequential deposition of binary sulfides

NASA Astrophysics Data System (ADS)

Medina-Montes, M. I.; Vieyra-Brito, O.; Mathews, N. R.; Mathew, X.

2018-05-01

In this work, CuSbS2 thin films were developed by annealing binary precursors deposited sequentially by rf magnetron sputtering. The recrystallization process was optimized and the films were extensively characterized using a number of tools such as XRD, Raman, SEM, energy dispersive x-ray spectroscopy, atomic force microscopy, Hall, UV–vis spectroscopy, Ellipsometry, Seebeck, and photoresponse. The influence of annealing temperature on the structure, morphology, elemental composition, optical and electrical properties are reported. Annealing below 350 °C resulted in famatinite (Cu3SbS4) and chalcostibite (CuSbS2) ternaries as well as binary phases. Phase-pure chalcostibite was obtained in the range of 350 °C–375 °C. At 400 °C, although CuSbS2 was predominant, tetrahedrite phase (Cu12Sb4S13) appeared as an additional phase. The elemental composition of the films was slightly sulfur deficient, and the atomic percentages of Cu, Sb and S showed a dependence on annealing temperature. The material properties of the phase-pure CuSbS2 thin films are: optical band gap in the range of 1.5–1.62 eV, absorption coefficient close to 105 cm‑1, atomic ratios of Cu/Sb ∼1 and (Cu + Sb)/S ∼1.2, crystal size 18.3–24.5 nm and grain size 50–300 nm. The films were photo-sensitive, showed p-type semiconductor behavior. Electrical resistivity, carrier density and hole mobility were 94–459 Ω cm, 1.6–7.0 × 1015 cm‑3 and 8.4–9.5 cm2 V‑1 s respectively.

Copper oxide thin films anchored on glass substrate by sol gel spin coating technique

NASA Astrophysics Data System (ADS)

Krishnaprabha, M.; Venu, M. Parvathy; Pattabi, Manjunatha

2018-05-01

Owing to the excellent optical, thermal, electrical and photocatalytic properties, copper oxide nanoparticles/films have found applications in optoelectronic devices like solar/photovoltaic cells, lithium ion batteries, gas sensors, catalysts, magnetic storage media etc. Copper oxide is a p-type semiconductor material having a band gap energy varying from 1.2 eV-2.1 eV. Syzygium Samarangense fruit extract was used as reducing agent to synthesize copper oxide nanostructures at room temperature from 10 mM copper sulphate pentahydrate solution. The synthesized nanostructures are deposited onto glass substrate by spin coating followed by annealing the film at 200 °C. Both the copper oxide colloid and films are characterized using UV-Vis spectroscopy, field emission scanning electron microscopy (FESEM) and energy dispersive spectroscopy (EDS) techniques. Presence of 2 peaks at 500 nm and a broad peak centered around 800 nm in the UV-Vis absorbance spectra of copper oxide colloid/films is indicative of the formation of anisotropic copper oxide nanostructures is confirmed by the FESEM images which showed the presence of triangular shaped and rod shaped particles. The rod shaped particles inside island like structures were found in unannealed films whereas the annealed films contained different shaped particles with reduced sizes. The elemental analysis using EDS spectra of copper oxide nanoparticles/films showed the presence of both copper and oxygen. Electrical properties of copper oxide nanoparticles are affected due to quantum size effect. The electrical studies carried out on both unannealed and annealed copper oxide films revealed an increase in resistivity with annealing of the films.

Critical temperature determination of detectable Cr diffusion enhancement by nanostructure through structural evolution analysis of the oxide films at 25-450 °C on 304 stainless steel

NASA Astrophysics Data System (ADS)

Gui, Y.; Meng, X. B.; Zheng, Z. J.; Gao, Y.

2017-10-01

The structural evolution of the oxide films at 25-450 °C on nanocrystalline (NC) and coarse crystalline (CC) 304 stainless steels (SS) was investigated. The structure of the oxide film on both NC and CC SSs was observed to undergo transient processes from a bi-layer to a single-layer and then back to a bi-layer when the temperature changed from the low range (25-150 °C) to the medium range (150-300 °C) and subsequently to the high range (300-450 °C), respectively. These formation mechanisms of the oxide films on SS were attributed to the different diffusion properties of Cr and Fe in the three temperature ranges. The thickness of the oxide films was similar between the NC and CC SSs below 300 °C due to their similar Crox/Feox concentration ratios in their oxide films at this temperature. Above 300 °C, Cr diffusion enhancement in the NC matrix led to a higher Crox/Feox ratio and better compactness of the oxide film, which resulted in a slower atomic diffusion rate in the oxide film and a thinner oxide film. Therefore, the temperature of 300 °C was concluded to be the critical temperature of the detectable Cr diffusion enhancement in the NC SS compared to the CC SS.

Radiation-induced deposition of transparent conductive tin oxide coatings

NASA Astrophysics Data System (ADS)

Umnov, S.; Asainov, O.; Temenkov, V.

2016-04-01

The study of tin oxide films is stimulated by the search for an alternative replacement of indium-tin oxide (ITO) films used as transparent conductors, oxidation catalysts, material gas sensors, etc. This work was aimed at studying the influence of argon ions irradiation on optical and electrical characteristics of tin oxide films. Thin films of tin oxide (without dopants) were deposited on glass substrates at room temperature using reactive magnetron sputtering. After deposition, the films were irradiated with an argon ion beam. The current density of the beam was (were) 2.5 mA/cm2, and the particles energy was 300-400 eV. The change of the optical and electrical properties of the films depending on the irradiation time was studied. Films optical properties were investigated by photometry in the range of 300-1100 nm. Films structural properties were studied using X-ray diffraction. The diffractometric research showed that the films, deposited on a substrate, had a crystal structure, and after argon ions irradiation they became quasi-crystalline (amorphous). It has been found that the transmission increases proportionally with the irradiation time, however the sheet resistance increases disproportionally. Tin oxide films (thickness ~30 nm) with ~100% transmittance and sheet resistance of ~100 kOhm/sq. were obtained. The study has proved to be prospective in the use of ion beams to improve the properties of transparent conducting oxides.

Two-dimensional Si(x)Ge(1-x) films with variable composition made via multilayer colloidal template-guided ionic liquid electrodeposition.

PubMed

Xin, Wuhong; Zhao, Jiupeng; Ge, Dengteng; Ding, Yanbo; Li, Yao; Endres, Frank

2013-02-21

The binary alloy system Si(x)Ge(1-x) provides a continuous series of materials with gradually varying properties. In this paper, we report on a fundamental basis a method to make large-area macroporous Si(x)Ge(1-x) films with variable Ge content by electrodeposition in an ionic liquid, with SiCl(4) and GeCl(4) as precursors. The chemical composition of the products can be modified by changing the molar ratio of the precursors. Periodical macroporous Si(x)Ge(1-x) was made by a multilayer polystyrene (PS) template assembled as face-centered cubic lattice. Two-dimensional (2-D) Si(x)Ge(1-x) bowl-like and fishing-net structures can be obtained by applying different deposition temperatures. The results highlight the potential applications, including photonic bandgap and battery materials, as well as ultra-thin gratings, due to the effect of modification of light and improved tunability of composition, although Si(x)Ge(1-x) made by our method is sensitive to oxidation by air.

Biopolymer-modified graphite oxide nanocomposite films based on benzalkonium chloride-heparin intercalated in graphite oxide

NASA Astrophysics Data System (ADS)

Meng, Na; Zhang, Shuang-Quan; Zhou, Ning-Lin; Shen, Jian

2010-05-01

Heparin is a potent anticoagulant agent that interacts strongly with antithrombin III to prevent the formation of fibrin clots. In the present work, poly(dimethylsiloxane)(PDMS)/graphite oxide-benzalkonium chloride-heparin (PDMS/modified graphite oxide) nanocomposite films were obtained by the solution intercalation technique as a possible drug delivery system. The heparin-benzalkonium chloride (BAC-HEP) was intercalated into graphite oxide (GO) layers to form GO-BAC-HEP (modified graphite oxide). Nanocomposite films were characterized by XRD, SEM, TEM, ATR-FTIR and TGA. The modified graphite oxide was observed to be homogeneously dispersed throughout the PDMS matrix. The effect of modified graphite oxide on the mechanical properties of the nanocomposite film was investigated. When the modified graphite oxide content was lower than 0.2 wt%, the nanocomposites showed excellent mechanical properties. Furthermore, nanocomposite films become delivery systems that release heparin slowly to make the nanocomposite films blood compatible. The in vitro studies included hemocompatibility testing for effects on platelet adhesion, platelet activation, plasma recalcification profiles, and hemolysis. Results from these studies showed that the anticoagulation properties of PDMS/GO-BCA-HEP nanocomposite films were greatly superior to those for no treated PDMS. Cell culture assay indicated that PDMS/GO-BCA-HEP nanocomposite films showed enhanced cell adhesion.

Growth and Etch Rate Study of Low Temperature Anodic Silicon Dioxide Thin Films

PubMed Central

Ashok, Akarapu; Pal, Prem

2014-01-01

Silicon dioxide (SiO2) thin films are most commonly used insulating films in the fabrication of silicon-based integrated circuits (ICs) and microelectromechanical systems (MEMS). Several techniques with different processing environments have been investigated to deposit silicon dioxide films at temperatures down to room temperature. Anodic oxidation of silicon is one of the low temperature processes to grow oxide films even below room temperature. In the present work, uniform silicon dioxide thin films are grown at room temperature by using anodic oxidation technique. Oxide films are synthesized in potentiostatic and potentiodynamic regimes at large applied voltages in order to investigate the effect of voltage, mechanical stirring of electrolyte, current density and the water percentage on growth rate, and the different properties of as-grown oxide films. Ellipsometry, FTIR, and SEM are employed to investigate various properties of the oxide films. A 5.25 Å/V growth rate is achieved in potentiostatic mode. In the case of potentiodynamic mode, 160 nm thickness is attained at 300 V. The oxide films developed in both modes are slightly silicon rich, uniform, and less porous. The present study is intended to inspect various properties which are considered for applications in MEMS and Microelectronics. PMID:24672287

Effect of mass density on surface morphology of electrodeposited manganese oxide films

NASA Astrophysics Data System (ADS)

Singh, Avtar; Kumar, Davinder; Thakur, Anup; Kaur, Raminder

2018-05-01

This work focus on high surface area morphology of manganese oxide films which are currently required for electrochemical capacitor electrode to enhance their performance. Electrodeposition of manganese oxide films was carried out using Chronoamperometry for different deposition time ranging from 30 to 120 sec. Cronoamperomertic I-T integrated data have been used to analyze active mass of all electrodeposited films. Morphological study of the deposited films with different mass was carried out through scanning electron microscopy. Film deposited for 30 sec time show highest porous morphology than others. Manganese oxide films with high porosity are suitable for electrochemical capacitor electrode.

Maximum: Recent Implementation and Application to the Study of Corrosion-Induced Microstructures in Thin Films of Aluminum-Copper Metallization.

NASA Astrophysics Data System (ADS)

Liang, Shoudeng

We describe the recent implementation of a synchrotron radiation based scanning soft X-ray photoemission microscope - MAXIMUM, and discuss its application to the investigation of corrosion-induced microstructures in Al-Cu-Si thin films. The microscope employs a Mo/Si multilayer-coated Schwarzschild objective to focus 95eV X-rays from an undulator beamline. The photoelectrons are energy-analyzed by a CMA, and the sample is rastered to produce an image. We have achieved 980A spatial and 250meV energy resolution. Recent addition of a sample preparation and transfer system to the microscope enables us to perform surface and materials studies under UHV conditions. Since the spatial resolution of the microscope is determined by the spot size of the focused X-rays, any electrostatic potential from surface charging will not affect the image quality. This allowed the study of highly insulating films with the use of an electron flood gun to compensate for spectral shifts. We have employed MAXIMUM to investigate corrosion -induced surface microstructures in the Al-Cu-Si thin films commonly utilized in VLSI metallization. Spectromicroscopy was performed to characterize the chemical species and their distribution on the film surface after corrosion under 85% relative humidity at 85^circ C. The experimental images demonstrated that Cu -rich precipitates were formed near the surface region beneath the oxide layer upon annealing. We also observed a correlation between the precipitates and the increased corrosion in the alloy film: the localized corrosion occurs only at those sites where precipitation has taken place. This implies that the surface oxide layer is modified by the underlying Cu-rich phase such that it loses protection against moisture. After pitting, the Cu-rich phase acts as a cathode to facilitate corrosion of the surrounding Cu-deficient Al matrix via galvanic action. The corrosion -induced microstructures show characteristic circular features in the micrographs of energy-specific photoelectrons from Cu 3d and O 2p valence bands. Such characteristic structures were observed only when the film was annealed below the solvus temperatures in the Al-Cu binary phase diagram, i.e., when a phase separation occurred. These results demonstrated the usefulness of spectromicroscopy in corrosion studies.

Structure and Internal Stress of Tin-Doped Indium Oxide and Indium-Zinc Oxide Films Deposited by DC Magnetron Sputtering

NASA Astrophysics Data System (ADS)

Nishimura, Eriko; Sasabayashi, Tomoko; Ito, Norihiro; Sato, Yasushi; Utsumi, Kentaro; Yano, Koki; Kaijo, Akira; Inoue, Kazuyoshi; Shigesato, Yuzo

2007-12-01

Representative transparent conductive oxide films, such as tin-doped indium oxide (ITO) and indium-zinc oxide (IZO) films, were deposited by dc magnetron sputtering using corresponding oxide targets under various total gas pressures (Ptot) ranging from 0.3 to 3.0 Pa. The ITO films deposited at a Ptot lower than 0.7 Pa were polycrystalline and were found to have a large compressive stress of about 1.5 × 109 Pa, whereas the ITO films deposited at 1.5-3.0 Pa were amorphous and had a low tensile stress. In contrast, all the IZO films deposited at a Ptot range of 0.3-3.0 Pa showed an entirely amorphous structure, where the compressive stress in the IZO films deposited at a Ptot lower than 1.5 Pa was lower than that in the ITO films. Such compressive stress was considered to be generated by the atomic peening effect of high-energy neutrals (Ar0) recoiled from the target or high-energy negative ions (O-) accelerated in the cathode sheath toward the film surface.

Characterization of interfacial reactions and oxide films on 316L stainless steel in various simulated PWR primary water environments

NASA Astrophysics Data System (ADS)

Chen, Junjie; Xiao, Qian; Lu, Zhanpeng; Ru, Xiangkun; Peng, Hao; Xiong, Qi; Li, Hongjuan

2017-06-01

The effect of water chemistry on the electrochemical and oxidizing behaviors of 316L SS was investigated in hydrogenated, deaerated and oxygenated PWR primary water at 310 °C. Water chemistry significantly influenced the electrochemical impedance spectroscopy parameters. The highest charge-transfer resistance and oxide-film resistance occurred in oxygenated water. The highest electric double-layer capacitance and constant phase element of the oxide film were in hydrogenated water. The oxide films formed in deaerated and hydrogenated environments were similar in composition but different in morphology. An oxide film with spinel outer particles and a compact and Cr-rich inner layer was formed in both hydrogenated and deaerated water. Larger and more loosely distributed outer oxide particles were formed in deaerated water. In oxygenated water, an oxide film with hematite outer particles and a porous and Ni-rich inner layer was formed. The reaction kinetics parameters obtained by electrochemical impedance spectroscopy measurements and oxidation film properties relating to the steady or quasi-steady state conditions in the time-period of measurements could provide fundamental information for understanding stress corrosion cracking processes and controlling parameters.

Effects of oxygen and antioxidants on the lipid oxidation and yellow discolouration of film from red tilapia mince.

PubMed

Tongnuanchan, Phakawat; Benjakul, Soottawat; Prodpran, Thummanoon

2012-09-01

Generally, biodegradable films from fish muscle protein become yellow after preparation. This discolouration is more likely associated with lipid oxidation and can be prevented by minimising the oxidation in the films. Thus, the effects of oxygen and antioxidants on lipid oxidation and yellow discolouration of film from red tilapia mince during storage were investigated. Both films prepared at pH 3 and 11, and kept under atmosphere containing 100% N(2) had the lowest TBARS value with the concomitant lowest b* and ΔE* values during storage (P < 0.05), when compared with other films kept in air and a 100% O(2) atmosphere. Films prepared at pH 3 and incorporated with antioxidants (Trolox and catechin) at all levels (100, 200 and 400 mg L(-1) film-forming solution) had the lowest TBARS value, b* and ΔE* values during storage, indicating the retardation of lipid oxidation and yellow discolouration in films. Nevertheless, films prepared at pH 11 had no difference in TBARS values, in comparison with control film, regardless of antioxidant incorporation. Coincidentally, increases in b* and ΔE* values were observed in those films. Lipid oxidation was the main factor inducing yellow discolouration of film exposed to oxygen and the incorporation of antioxidants in film prepared at acidic pH was able to prevent yellow discolouration of resulting film. Copyright © 2012 Society of Chemical Industry.

Metal oxide-encapsulated dye-sensitized photoanodes for dye-sensitized solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hupp, Joseph T.; Son, Ho-Jin

2016-01-12

Dye-sensitized semiconducting metal oxide films for photoanodes, photoanodes incorporating the films and DSCs incorporating the photoanodes are provided. Also provided are methods for making the dye sensitized semiconducting metal oxide films. The methods of making the films are based on the deposition of an encapsulating layer of a semiconducting metal oxide around the molecular anchoring groups of photosensitizing dye molecules adsorbed to a porous film of the semiconducting metal oxide. The encapsulating layer of semiconducting metal oxide is formed in such a way that it is not coated over the chromophores of the adsorbed dye molecules and, therefore, allows themore » dye molecules to remain electrochemically addressable.« less

Electrodeposition of Manganese-Nickel Oxide Films on a Graphite Sheet for Electrochemical Capacitor Applications.

PubMed

Lee, Hae-Min; Lee, Kangtaek; Kim, Chang-Koo

2014-01-09

Manganese-nickel (Mn-Ni) oxide films were electrodeposited on a graphite sheet in a bath consisting of manganese acetate and nickel chloride, and the structural, morphological, and electrochemical properties of these films were investigated. The electrodeposited Mn-Ni oxide films had porous structures covered with nanofibers. The X-ray diffractometer pattern revealed the presence of separate manganese oxide (g-MnO₂) and nickel oxide (NiO) in the films. The electrodeposited Mn-Ni oxide electrode exhibited a specific capacitance of 424 F/g in Na₂SO₄ electrolyte. This electrode maintained 86% of its initial specific capacitance over 2000 cycles of the charge-discharge operation, showing good cycling stability.

Electrical and optical performance of transparent conducting oxide films deposited by electrostatic spray assisted vapour deposition.

PubMed

Hou, Xianghui; Choy, Kwang-Leong; Liu, Jun-Peng

2011-09-01

Transparent conducting oxide (TCO) films have the remarkable combination of high electrical conductivity and optical transparency. There is always a strong motivation to produce TCO films with good performance at low cost. Electrostatic Spray Assisted Vapor Deposition (ESAVD), as a variant of chemical vapour deposition (CVD), is a non-vacuum and low-cost deposition method. Several types of TCO films have been deposited using ESAVD process, including indium tin oxide (ITO), antimony-doped tin oxide (ATO), and fluorine doped tin oxide (FTO). This paper reports the electrical and optical properties of TCO films produced by ESAVD methods, as well as the effects of post treatment by plasma hydrogenation on these TCO films. The possible mechanisms involved during plasma hydrogenation of TCO films are also discussed. Reduction and etching effect during plasma hydrogenation are the most important factors which determine the optical and electrical performance of TCO films.

Chitosan-Iron Oxide Coated Graphene Oxide Nanocomposite Hydrogel: A Robust and Soft Antimicrobial Biofilm.

PubMed

Konwar, Achyut; Kalita, Sanjeeb; Kotoky, Jibon; Chowdhury, Devasish

2016-08-17

We report a robust biofilm with antimicrobial properties fabricated from chitosan-iron oxide coated graphene oxide nanocomposite hydrogel. For the first time, the coprecipitation method was used for the successful synthesis of iron oxide coated graphene oxide (GIO) nanomaterial. After this, films were fabricated by the gel-casting technique aided by the self-healing ability of the chitosan hydrogel network system. Both the nanomaterial and the nanocomposite films were characterized by techniques such as scanning electron microscopy, FT-IR spectroscopy, X-ray diffraction, and vibrating sample magnetometry. Measurements of the thermodynamic stability and mechanical properties of the films indictaed a significant improvement in their thermal and mechanical properties. Moreover, the stress-strain profile indicated the tough nature of the nanocomposite hydrogel films. These improvements, therefore, indicated an effective interaction and good compatibility of the GIO nanomaterial with the chitosan hydrogel matrix. In addition, it was also possible to fabricate films with tunable surface properties such as hydrophobicity simply by varying the loading percentage of GIO nanomaterial in the hydrogel matrix. Fascinatingly, the chitosan-iron oxide coated graphene oxide nanocomposite hydrogel films displayed significant antimicrobial activities against both Gram-positive and Gram-negative bacterial strains, such as methicillin-resistant Staphylococcus aureus, Staphylococcus aureus, and Escherichia coli, and also against the opportunistic dermatophyte Candida albicans. The antimicrobial activities of the films were tested by agar diffusion assay and antimicrobial testing based on direct contact. A comparison of the antimicrobial activity of the chitosan-GIO nanocomposite hydrogel films with those of individual chitosan-graphene oxide and chitosan-iron oxide nanocomposite films demonstrated a higher antimicrobial activity for the former in both types of tests. In vitro hemolysis potentiality tests and MTT assays of the nanocomposite films indicated a noncytotoxic nature of the films, which conveyed the possibility of potential applications of these soft and tough films in biomedical as well as in the food industry.

Characterization of sputtered iridium oxide thin films on planar and laser micro-structured platinum thin film surfaces for neural stimulation applications

NASA Astrophysics Data System (ADS)

Thanawala, Sachin

Electrical stimulation of neurons provides promising results for treatment of a number of diseases and for restoration of lost function. Clinical examples include retinal stimulation for treatment of blindness and cochlear implants for deafness and deep brain stimulation for treatment of Parkinsons disease. A wide variety of materials have been tested for fabrication of electrodes for neural stimulation applications, some of which are platinum and its alloys, titanium nitride, and iridium oxide. In this study iridium oxide thin films were sputtered onto laser micro-structured platinum thin films by pulsed-DC reactive sputtering of iridium metal in oxygen-containing atmosphere, to obtain high charge capacity coatings for neural stimulation applications. The micro-structuring of platinum films was achieved by a pulsed-laser-based technique (KrF excimer laser emitting at lambda=248nm). The surface morphology of the micro-structured films was studied using different surface characterization techniques. In-vitro biocompatibility of these laser micro-structured films coated with iridium oxide thin films was evaluated using cortical neurons isolated from rat embryo brain. Characterization of these laser micro-structured films coated with iridium oxide, by cyclic voltammetry and impedance spectroscopy has revealed a considerable decrease in impedance and increase in charge capacity. A comparison between amorphous and crystalline iridium oxide thin films as electrode materials indicated that amorphous iridium oxide has significantly higher charge capacity and lower impedance making it preferable material for neural stimulation application. Our biocompatibility studies show that neural cells can grow and differentiate successfully on our laser micro-structured films coated with iridium oxide. This indicates that reactively sputtered iridium oxide (SIROF) is biocompatible.

FILM FORMAT AND FIDUCIAL MARKS OF THE 20$sub 4$ BUBBLE CHAMBER

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hart, E.L.

1962-12-31

A description is given of the 20-in. bubble chamber film format. The film format consists of: chamber image; Arabic picture number; binary data box; Arabic view number; and the Hough-Powell road fiducial marks. The fiducial marks and their relation to the chamber optical constants are discussed. The constants are based on the standard measuring fiducials a and d. (P.C.H.)

Film-forming properties of castor oil polyol ester blends in elastohydrodynamic conditions

USDA-ARS?s Scientific Manuscript database

The viscosities and elastohydrodynamic (EHD) film thickness properties of binary blends of castor oil with polyol esters were determined experimentally. Predicted blend viscosity was calculated from the viscosity of the pure blend components. Measured viscosity values were closer to the values pre...

Interfacial development of electrophoretically deposited graphene oxide films on Al alloys

DOE PAGES

Jin, Sumin; Dickerson, James H.; Pham, Viet Hung; ...

2015-07-28

Adhesion between film and substrate is critical for electronic device and coating applications. Interfacial development between electrophoretically deposited graphene oxide films on Al 1100 and Al 5052 alloys were investigated using FT-IR and XPS depth profiling techniques. Obtained results suggest metal ion permeation from the substrates into deposited graphene oxide films. The interface between the films and the substrates were primarily composed of Al-O-C bonds from oxygenated defects on graphene oxide plane rather than expected Al-C formation. Films heat treated at 150 °C had change in microstructure and peak shifts in XPS spectra suggesting change in chemical structure of bondsmore » between the films and the substrates.« less

Local electrical properties of thermally grown oxide films formed on duplex stainless steel surfaces

NASA Astrophysics Data System (ADS)

Guo, L. Q.; Yang, B. J.; He, J. Y.; Qiao, L. J.

2018-06-01

The local electrical properties of thermally grown oxide films formed on ferrite and austenite surfaces of duplex stainless steel at different temperatures were investigated by Current sensing atomic force microscopy, X-ray Photoelectron Spectroscopy (XPS) and Auger Electron Spectroscopy (AES). The current maps and XPS/AES analyses show that the oxide films covering austenite and ferrite surfaces formed at different temperatures exhibit different local electrical characteristics, thickness and composition. The dependence of electrical conductivity of oxide films covering austenite and ferrite surface on the formation temperature is attributed to the film thickness and semiconducting structures, which is intrinsically related to thermodynamics and kinetics process of film grown at different temperature. This is well elucidated by corresponding semiconductor band structures of oxide films formed on austenite and ferrite phases at different temperature.

Optimization of exchange bias in Co/CoO magnetic nanocaps by tuning deposition parameters

NASA Astrophysics Data System (ADS)

Sharma, A.; Tripathi, J.; Ugochukwu, K. C.; Tripathi, S.

2017-03-01

In the present work, we report exchange bias tuning by varying thin film deposition parameters such as synthesis method and underlying layer patterning. The patterned substrates for this study were prepared by self-assembly of polystyrene (PS) latex spheres ( 530 nm) on Si (100) substrate. The desired magnetic nanocaps composed of CoO/Co bilayer film on these patterned substrates were prepared by molecular beam epitaxy technique under ultra-high vacuum conditions. For this, a Co layer of 10 nm thickness was deposited on the substrates and then oxidized in-situ to form CoO/Co/PS in-situ oxidized film or ex-situ in ambiance which also gives CoO/Co/PS naturally oxidized film. Simultaneously, reference thin films of Co ( 10 nm) were also prepared on plane Si substrate and similar oxidation treatments were performed on them respectively. The magnetic properties studied using SQUID technique revealed higher exchange bias ( 1736 Oe) in the in-situ oxidized Co/PS film as compared to that in naturally oxidized Co/PS film ( 1544 Oe) and also compared to the reference film. The observed variations in the magnetic properties are explained in terms of surface patterning induced structural changes of the deposited films and different oxidation methods.

Fabrication of long-term stable superoleophobic surface based on copper oxide/cobalt oxide with micro-nanoscale hierarchical roughness

NASA Astrophysics Data System (ADS)

Barthwal, Sumit; Lim, Si-Hyung

2015-02-01

We have demonstrated a simple and cost-effective technique for the large-area fabrication of a superoleophobic surface using copper as a substrate. The whole process included three simple steps: First, the copper substrate was oxidized under hot alkaline conditions to fabricate flower-like copper oxide microspheres by heating at a particular temperature for an interval of time. Second, the copper-oxide-covered copper substrate was further heated in a solution of cobalt nitrate and ammonium nitrate in the presence of an ammonia solution to fabricate cobalt oxide nanostructures. We applied this second step to increase the surface roughness because it is an important criterion for improved superoleophobicity. Finally, to reduce the surface energy of the fabricated structures, the surfaces were chemically modified with perfluorooctyltrichlorosilane. Contact-angle measurements indicate that the micro-nano binary (MNB) hierarchical structures fabricated on the copper substrate became super-repellent toward a broad range of liquids with surface tension in the range of 21.5-72 mN/m. In an attempt to significantly improve the superoleophobic property of the surface, we also examined and compared the role of nanostructures in MNB hierarchical structures with only micro-fabricated surfaces. The fabricated MNB hierarchical structures also displays thermal stability and excellent long-term stability after exposure in air for more than 9 months. Our method might provide a general route toward the preparation of novel hierarchical films on metal substrates for various industrial applications.

Hafnium Oxide Film Etching Using Hydrogen Chloride Gas

NASA Astrophysics Data System (ADS)

Habuka, Hitoshi; Yamaji, Masahiko; Kobori, Yoshitsugu; Horii, Sadayoshi; Kunii, Yasuo

2009-12-01

Hydrogen chloride gas removes the hafnium oxide film formed by atomic layer deposition at the etch rate of about 1 nm/min. A 100 nm-thick hafnium oxide film was perfectly etched off at 1173 K for 60 min by 100% hydrogen chloride gas at 100 sccm. A weight decrease in the hafnium oxide film was observed at temperatures higher than ca. 600 K, which corresponds to the sublimation point of hafnium tetrachloride. The etching by-product is considered to be hafnium tetrachloride. The etching technique developed in this study is expected to be applicable to various processes, such as the cleaning of a hafnium oxide film deposition reactor.

Intense photoluminescence from amorphous tantalum oxide films

NASA Astrophysics Data System (ADS)

Zhu, Minmin; Zhang, Zhengjun; Miao, Wei

2006-07-01

Tantalum oxide films were deposited on silicon substrates at a temperature of ˜450°C by heating a pure tantalum foil in a rough vacuum. The films were amorphous in structure and consisted of fully oxidized Ta2O5 and (TaOx, x <2.5) suboxides. This feature resulted in strong visible light emission from the films further oxidized in the air at temperatures of 200-300°C. The mechanism for this photoluminescence behavior of the amorphous tantalum oxide films was also investigated and discussed. This study suggests that wide-band-gap materials could act as effective visible light emitters and provides a simple route to synthesize such materials.

Mechanical Properties of Oxide Films on Electrolytic In-process Dressing (ELID) Copper-based Grinding Wheel

NASA Astrophysics Data System (ADS)

Kuai, J. C.; Wang, J. W.; Jiang, C. R.; Zhang, H. L.; Yang, Z. B.

2018-05-01

The mechanical properties of oxide films on copper based grinding wheel were studied by nanoindentation technique. The analysis of load displacement shows that the creep phenomenon occurs during the loading stage. Results show that the oxide film and the matrix have different characteristics, and the rigidity of the copper based grinding wheel is 0.6-1.3mN/nm, which is weaker than that of the matrix; the hardness of the oxide film is 2000-2300MPa, which is higher than the matrix; and the elastic modulus of the oxide film is 100-120GPa, also higher than the matrix.

Growth control of the oxidation state in vanadium oxide thin films

DOE PAGES

Lee, Shinbuhm; Meyer, Tricia L.; Park, Sungkyun; ...

2014-12-05

Precise control of the chemical valence or oxidation state of vanadium in vanadium oxide thin films is highly desirable for not only fundamental research, but also technological applications that utilize the subtle change in the physical properties originating from the metalinsulator transition (MIT) near room temperature. However, due to the multivalent nature of vanadium and the lack of a good understanding on growth control of the oxidation state, stabilization of phase pure vanadium oxides with a single oxidation state is extremely challenging. Here, we systematically varied the growth conditions to clearly map out the growth window for preparing phase puremore » epitaxial vanadium oxides by pulsed laser deposition for providing a guideline to grow high quality thin films with well-defined oxidation states of V₂⁺²O₃, V⁺⁴O₂, and V₂⁺⁵O₅. A well pronounced MIT was only observed in VO₂ films grown in a very narrow range of oxygen partial pressure P(O₂). The films grown either in lower (< 10 mTorr) or higher P(O₂) (> 25 mTorr) result in V₂O₃ and V₂O₅ phases, respectively, thereby suppressing the MIT for both cases. We have also found that the resistivity ratio before and after the MIT of VO₂ thin films can be further enhanced by one order of magnitude when the films are further oxidized by post-annealing at a well-controlled oxidizing ambient. This result indicates that stabilizing vanadium into a single valence state has to compromise with insufficient oxidation of an as grown thin film and, thereby, a subsequent oxidation is required for an 3 improved MIT behavior.« less

Growth control of the oxidation state in vanadium oxide thin films

NASA Astrophysics Data System (ADS)

Lee, Shinbuhm; Meyer, Tricia L.; Park, Sungkyun; Egami, Takeshi; Lee, Ho Nyung

2014-12-01

Precise control of the chemical valence or oxidation state of vanadium in vanadium oxide thin films is highly desirable for not only fundamental research but also technological applications that utilize the subtle change in the physical properties originating from the metal-insulator transition (MIT) near room temperature. However, due to the multivalent nature of vanadium and the lack of a good understanding on growth control of the oxidation state, stabilization of phase pure vanadium oxides with a single oxidation state is extremely challenging. Here, we systematically varied the growth conditions to clearly map out the growth window for preparing phase pure epitaxial vanadium oxides by pulsed laser deposition for providing a guideline to grow high quality thin films with well-defined oxidation states of V2 + 3 O 3 , V + 4 O 2 , and V2 + 5 O 5 . A well pronounced MIT was only observed in VO2 films grown in a very narrow range of oxygen partial pressure P(O2). The films grown either in lower (<10 mTorr) or higher P(O2) (>25 mTorr) result in V2O3 and V2O5 phases, respectively, thereby suppressing the MIT for both cases. We have also found that the resistivity ratio before and after the MIT of VO2 thin films can be further enhanced by one order of magnitude when the films are further oxidized by post-annealing at a well-controlled oxidizing ambient. This result indicates that stabilizing vanadium into a single valence state has to compromise with insufficient oxidation of an as grown thin film and, thereby, a subsequent oxidation is required for an improved MIT behavior.

Growth control of the oxidation state in vanadium oxide thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lee, Shinbuhm; Meyer, Tricia L.; Lee, Ho Nyung, E-mail: hnlee@ornl.gov

2014-12-01

Precise control of the chemical valence or oxidation state of vanadium in vanadium oxide thin films is highly desirable for not only fundamental research but also technological applications that utilize the subtle change in the physical properties originating from the metal-insulator transition (MIT) near room temperature. However, due to the multivalent nature of vanadium and the lack of a good understanding on growth control of the oxidation state, stabilization of phase pure vanadium oxides with a single oxidation state is extremely challenging. Here, we systematically varied the growth conditions to clearly map out the growth window for preparing phase puremore » epitaxial vanadium oxides by pulsed laser deposition for providing a guideline to grow high quality thin films with well-defined oxidation states of V{sub 2}{sup +3}O{sub 3}, V{sup +4}O{sub 2}, and V{sub 2}{sup +5}O{sub 5}. A well pronounced MIT was only observed in VO{sub 2} films grown in a very narrow range of oxygen partial pressure P(O{sub 2}). The films grown either in lower (<10 mTorr) or higher P(O{sub 2}) (>25 mTorr) result in V{sub 2}O{sub 3} and V{sub 2}O{sub 5} phases, respectively, thereby suppressing the MIT for both cases. We have also found that the resistivity ratio before and after the MIT of VO{sub 2} thin films can be further enhanced by one order of magnitude when the films are further oxidized by post-annealing at a well-controlled oxidizing ambient. This result indicates that stabilizing vanadium into a single valence state has to compromise with insufficient oxidation of an as grown thin film and, thereby, a subsequent oxidation is required for an improved MIT behavior.« less

The effect of sub-oxide phases on the transparency of tin-doped gallium oxide

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lim, K.; Schelhas, L. T.; Siah, S. C.

2016-10-03

There have been a number of studies on the fabrication of Sn-doped gallium oxide (Ga 2O 3:Sn) films with both conductive and transparent properties using a variety of deposition methods. However, often, synthesis results in films that are not transparent. In this paper, we examine the mechanisms underlying these results in Ga 2O 3:Sn thin films prepared at various growth temperatures, Sn concentrations, and oxygen partial pressures. With X-ray absorption spectroscopy, transmission electron microscopy and energy dispersive spectroscopy, we find that when films are grown under the oxygen deficient conditions there are Ga sub-oxide and SnOx phases in the Gamore » 2O 3:Sn thin film. These Ga sub-oxide phases are only found in non-transparent films, and so we infer that the Ga sub-oxide is responsible for the non-transparency. These observations suggest that to obtain transparent Ga 2O 3:Sn, films deposition or subsequent annealing must be carefully controlled in both temperature and oxygen partial pressure to avoid the formation of Ga sub-oxide phases.« less

The effect of sub-oxide phases on the transparency of tin-doped gallium oxide

DOE PAGES

Lim, K.; Schelhas, L. T.; Siah, S. C.; ...

2016-10-07

There have been a number of studies on the fabrication of Sn-doped gallium oxide (Ga 2O 3:Sn) films with both conductive and transparent properties using a variety of deposition methods. However, often, synthesis results in films that are not transparent. In this paper, we examine the mechanisms underlying these results in Ga 2O 3:Sn thin films prepared at various growth temperatures, Sn concentrations, and oxygen partial pressures. With X-ray absorption spectroscopy, transmission electron microscopy and energy dispersive spectroscopy, we find that when films are grown under the oxygen deficient conditions there are Ga sub-oxide and SnO x phases in themore » Ga 2O 3:Sn thin film. These Ga sub-oxide phases are only found in non-transparent films, and so we infer that the Ga sub-oxide is responsible for the non-transparency. Furthermore, these observations suggest that to obtain transparent Ga 2O 3:Sn, films deposition or subsequent annealing must be carefully controlled in both temperature and oxygen partial pressure to avoid the formation of Ga sub-oxide phases.« less

Degradation of superconducting Nb/NbN films by atmospheric oxidation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Henry, M. David; Wolfley, Steve; Young, Travis

2017-03-01

Niobium and niobium nitride thin films are transitioning from fundamental research toward wafer scale manufacturing with technology drivers that include superconducting circuits and electronics, optical single photon detectors, logic, and memory. Successful microfabrication requires precise control over the properties of sputtered superconducting films, including oxidation. Previous work has demonstrated the mechanism in oxidation of Nb and how film structure could have deleterious effects upon the superconducting properties. This study provides an examination of atmospheric oxidation of NbN films. By examination of the room temperature sheet resistance of NbN bulk oxidation was identified and confirmed by secondary ion mass spectrometry. Asmore » a result, Meissner magnetic measurements confirmed the bulk oxidation not observed with simple cryogenic resistivity measurements.« less

Ferromagnetic phase in partially oxidized FeMn films

NASA Astrophysics Data System (ADS)

Svalov, A. V.; Savin, P. A.; Lepalovskij, V. N.; Vas'kovskiy, V. O.; Larrañaga, A.; Kurlyandskaya, G. V.

2018-04-01

The structure, magnetic and magnetoresistive properties of ferromagnetic phase in partially oxidized FeMn films was studied. The oxidation was performed by annealing of the samples under atmospheric pressure in a gas mixture (nitrogen with 0.5% oxygen) at the temperature of 300 °C. The resulting ferromagnetic phase was isotropic in the film plane. The value of the anisotropic magnetoresistance was similar to the value of the anisotropic magnetoresistance usually observed in films of pure iron. The oxidation of antiferromagnetic FeMn films resulted in the appearance of an exchange bias.

Chitosan/graphene oxide biocomposite film from pencil rod

NASA Astrophysics Data System (ADS)

Gea, S.; Sari, J. N.; Bulan, R.; Piliang, A.; Amaturrahim, S. A.; Hutapea, Y. A.

2018-03-01

Graphene Oxide (GO) has been succesfully synthesized using Hummber method from graphite powder of pencil rod. The excellent solubility of graphene oxide (GO)in water imparts its feasibilty as new filler for reinforcement hydrophilic biopolymers. In this research, the biocomposite film was fabricated from chitosan/graphene oxide. The characteristics of graphene oxide were investigated using Fourier Transform Infrared (FT-IR) and X-ray Diffraction (XRD). The results of the XRD showed graphene structur in 2θ, appeared at 9.0715°with interlayer spacing was about 9.74063Å. Preparation films with several variations of chitosan/graphene oxide was done by casting method and characterized by mechanical and morphological analysis. The mechanical properties of the tensile test in the film show that the film CS/GO (85: 15)% has the optimum Young’s modulus size of 2.9 GPa compared to other variations of CS / GO film. Morphological analysis film CS/GO (85:15)% by Scanning Electron Microscopy (SEM), the obtained biocomposites film showed fine dispersion of GO in the CS matrix and could mix each other homogeneously.

Scavenging of oxygen from SrTiO3 by metals and its implications for oxide thin film deposition

NASA Astrophysics Data System (ADS)

Posadas, Agham; Kormondy, Kristy; Guo, Wei; Ponath, Patrick; Kremer, Jacqueline; Hadamek, Tobias; Demkov, Alexander

SrTiO3 is a widely used substrate for the growth of other functional oxide thin films. However, SrTiO3 loses oxygen very easily during oxide thin film deposition even under relatively high oxygen pressures. In some cases, there will be an interfacial layer of oxygen-deficient SrTiO3 formed at the interface with the deposited oxide film, depending on the metals present in the film. By depositing a variety of metals layer by layer and measuring the evolution of the core level spectra of both the deposited metal and SrTiO3 using x-ray photoelectron spectroscopy, we show that there are three distinct types of behavior that occur for thin metal films on SrTiO3. We discuss the implications of these types of behavior for the growth of complex oxide thin films on SrTiO3, and which oxide thin films are expected to produce an interfacial oxygen-deficient layer depending on their elemental constituents.

Transparent Oxide Thin-Film Transistors: Production, Characterization and Integration

NASA Astrophysics Data System (ADS)

Barquinha, Pedro Miguel Candido

This dissertation is devoted to the study of the emerging area of transparent electronics, summarizing research work regarding the development of n-type thin-film transistors (TFTs) based on sputtered oxide semiconductors. All the materials are produced without intentional substrate heating, with annealing temperatures of only 150-200 °C being used to optimize transistor performance. The work is based on the study and optimization of active semiconductors from the gallium-indium-zinc oxide system, including both the binary compounds Ga2O3, In2O3 and ZnO, as well as ternary and quaternary oxides based on mixtures of those, such as IZO and GIZO with different atomic ratios. Several topics are explored, including the study and optimization of the oxide semiconductor thin films, their application as channel layers on TFTs and finally the implementation of the optimized processes to fabricate active matrix backplanes to be integrated in liquid crystal display (LCD) prototypes. Sputtered amorphous dielectrics with high dielectric constant (high-kappa) based on mixtures of tantalum-silicon or tantalum-aluminum oxides are also studied and used as the dielectric layers on fully transparent TFTs. These devices also include transparent and highly conducting IZO thin films as source, drain and gate electrodes. Given the flexibility of the sputtering technique, oxide semiconductors are analyzed regarding several deposition parameters, such as oxygen partial pressure and deposition pressure, as well as target composition. One of the most interesting features of multicomponent oxides such as IZO and GIZO is that, due to their unique electronic configuration and carrier transport mechanism, they allow to obtain amorphous structures with remarkable electrical properties, such as high hall-effect mobility that exceeds 60 cm2 V -1 s-1 for IZO. These properties can be easily tuned by changing the processing conditions and the atomic ratios of the multicomponent oxides, allowing to have amorphous oxides suitable to be used either as transparent semiconductors or as highly conducting electrodes. The amorphous structure, which is maintained even if the thin films are annealed at 500 °C, brings great advantages concerning interface quality and uniformity in large areas. A complete study comprising different deposition conditions of the semiconductor layer is also made regarding TFT electrical performance. Optimized devices present outstanding electrical performance, such as field-effect mobility (muFE) exceeding 20 cm2 V -1 s-1, turn-on voltage (Von) between -1 and 1 V, subthreshold slope (S) lower than 0.25 V dec-1 and On-Off ratio above 107 . Devices employing amorphous multicomponent oxides present largely improved properties when compared with the ones based on polycrystalline ZnO, mostly in terms of muFE. Within the compositional range where IZO and GIZO films are amorphous, TFT performance can be largely adjusted: for instance, high indium contents favor large mu FE but also highly negative Von, which can be compensated by proper amounts of zinc and gallium. Large oxygen concentrations during oxide semiconductor sputtering are found to be deleterious, decreasing muFE, shifting Von towards high values and turning the devices electrically unstable. It is also shown that semiconductor thickness (ds) has a very important role: for instance, by reducing ds to 10 nm it is possible to produce TFTs with Von≈0 V even using deposition conditions and/or target compositions that normally yield highly conducting films. Given the low ds of the films, this behavior is mostly related with surface states existent at the oxide semiconductor air-exposed back-surface, where depletion layers that can extend towards the dielectric/semiconductor interface are created due to the interaction with atmospheric oxygen. Different passivation layers on top of this air-exposed surface are studied, with SU-8 revealing to be to most effective one. Other important topics are source-drain contact resistance assessment and the effect of different annealing temperatures ( TA), being the properties of the TFTs dominated by TA rather than by the deposition conditions as TA increases. Fully transparent TFTs employing sputtered amorphous multicomponent dielectrics produced without intentional substrate heating present excellent electrical properties, that approach those exhibited by devices using PECVD SiO2 produced at 400 °C. Gate leakage current can be greatly reduced by using tantalum-silicon or tantalum-aluminum oxides rather than Ta2O5. A section of this dissertation is also devoted to the analysis of current stress stability and aging effects of the TFTs, being found that optimal devices exhibit recoverable threshold voltage shifts lower than 0.50 V after 24 h stress with constant drain current of 10 muA, as well as negligible aging effects during 18 months. The research work of this dissertation culminates in the fabrication of a backplane employing transparent TFTs and subsequent integration with a LCD frontplane by Hewlett-Packard. The successful operation of this initial 2.8h prototype with 128x128 pixels provides a solid demonstration that oxide semiconductor-based TFTs have the potential to largely contribute to a novel electronics era, where semiconductor materials away from conventional silicon are used to create fascinating applications, such as transparent electronic products.

Spatially resolved variations in reflectivity across iron oxide thin films

NASA Astrophysics Data System (ADS)

Kelley, Chris S.; Thompson, Sarah M.; Gilks, Daniel; Sizeland, James; Lari, Leonardo; Lazarov, Vlado K.; Matsuzaki, Kosuke; LeFrançois, Stéphane; Cinque, Gianfelice; Dumas, Paul

2017-11-01

The spin polarising properties of the iron oxide magnetite (Fe3O4) make it attractive for use in spintronic devices, but its sensitivity to compositional and structural variations make it challenging to prepare reliably. Infrared microspectroscopy and modelling are used to determine the spatial variation in the chemical composition of three thin films of iron oxide; one prepared by pulsed laser deposition (PLD), one by molecular beam epitaxy (MBE) deposition of iron whilst simultaneously flowing oxygen into the chamber and one by flowing oxygen only once deposition is complete. The technique is easily able to distinguish between films which contain metallic iron and different iron oxide phases as well as spatial variations in composition across the films. The film grown by post-oxidising iron is spatially uniform but not fully oxidised, the film grown by simultaneously oxidising iron showed spatial variation in oxide composition while the film grown by PLD was spatially uniform magnetite.

Pulsed photonic fabrication of nanostructured metal oxide thin films

NASA Astrophysics Data System (ADS)

Bourgeois, Briley B.; Luo, Sijun; Riggs, Brian C.; Adireddy, Shiva; Chrisey, Douglas B.

2017-09-01

Nanostructured metal oxide thin films with a large specific surface area are preferable for practical device applications in energy conversion and storage. Herein, we report instantaneous (milliseconds) photonic synthesis of three-dimensional (3-D) nanostructured metal oxide thin films through the pulsed photoinitiated pyrolysis of organometallic precursor films made by chemical solution deposition. High wall-plug efficiency-pulsed photonic irradiation (xenon flash lamp, pulse width of 1.93 ms, fluence of 7.7 J/cm2 and frequency of 1.2 Hz) is used for scalable photonic processing. The photothermal effect of subsequent pulses rapidly improves the crystalline quality of nanocrystalline metal oxide thin films in minutes. The following paper highlights pulsed photonic fabrication of 3-D nanostructured TiO2, Co3O4, and Fe2O3 thin films, exemplifying a promising new method for the low-cost and high-throughput manufacturing of nanostructured metal oxide thin films for energy applications.

X-ray photoelectron spectroscopic study of the oxide film on an aluminum-tin alloy in 3.5% sodium chloride solution

DOE Office of Scientific and Technical Information (OSTI.GOV)

Venugopal, A.; Selvam, P.; Raja, V.S.

1997-10-01

Oxide films on Al and an Al-Sn alloy were analyzed by x-ray photoelectron spectroscopy (XPS) after immersion in 3.5% sodium chloride (NaCl) solution. Results showed Sn exhibited both Sn{sup 2+} and Sn{sup 4+} oxidation stats in the oxide film. It was proposed that incorporation of these cations in the film would result in generation of more anionic and cationic vacancies in aluminum oxide (Al{sub 2}O{sub 3}), leading to active dissolution of Al.

Amorphous tin-cadmium oxide films and the production thereof

DOEpatents

Li, Xiaonan; Gessert, Timothy A

2013-10-29

A tin-cadmium oxide film having an amorphous structure and a ratio of tin atoms to cadmium atoms of between 1:1 and 3:1. The tin-cadmium oxide film may have an optical band gap of between 2.7 eV and 3.35 eV. The film may also have a charge carrier concentration of between 1.times.10.sup.20 cm.sup.-3 and 2.times.10.sup.20 cm.sup.-3. The tin cadmium oxide film may also exhibit a Hall mobility of between 40 cm.sup.2V.sup.-1 s.sup.-1 and 60 cm.sup.2V.sup.-1 s.sup.-1. Also disclosed is a method of producing an amorphous tin-cadmium oxide film as described and devices using same.

Giant magnetoresistance in ion beam deposited spin-valve films with specular enhancement

NASA Astrophysics Data System (ADS)

Sant, S.; Mao, M.; Kools, J.; Koi, K.; Iwasaki, H.; Sahashi, M.

2001-06-01

Three different techniques, natural oxidation, remote plasma oxidation and low energy ion beam oxidation, have been proved to be equally effective in forming nano-oxide layers (NOLs) in spin-valve films for specular enhancement of giant magnetoresistance (GMR) effect. GMR values over 12% have been routinely obtained in spin-valve films with NOL, corresponding to a 30% specular enhancement over those without NOL. The consistency and robustness of the oxidation processes has been demonstrated by a very large GMR value ˜19% in a dual spin-valve film with the NOLs formed in both pinned layers, the oscillatory dependence of the interlayer coupling field on Cu layer thickness in specular enhanced spin-valve films and the uniform and repeatable film performance over 5 in. substrates.

Preparation of transparent conductors ferroelectric memory materials and ferrites

DOEpatents

Bhattacharya, Raghu Nath; Ginley, David S.

1998-01-01

A process for the preparation by electrodeposition of metal oxide film and powder compounds for ferroelectric memory materials and ferrites wherein the metal oxide includes a plurality of metals. The process comprises providing an electrodeposition bath, providing soluble salts of the metals to this bath, electrically energizing the bath to thereby cause formation of a recoverable film of metal on the electrode, recovering the resultant film as a film or a powder, and recovering powder formed on the floor of the bath. The films and powders so produced are subsequently annealed to thereby produce metal oxide for use in electronic applications. The process can be employed to produce metal-doped metal oxide film and powder compounds for transparent conductors. The process for preparation of these metal-doped metal oxides follows that described above.

Transparent binary-thickness coatings on metal substrates that produce binary patterns of orthogonal elliptical polarization states in reflected light

NASA Astrophysics Data System (ADS)

Azzam, Rasheed M. A.; Angel, Wade W.

1992-12-01

A reflective division-of-wavefront polarizing beam splitter is described that uses a dual- thickness transparent thin-film coating on a metal substrate. A previous design that used a partially clad substrate at the principal angle of the metal [Azzam, JOSA A 5, 1576 (1988)] is replaced by a more general one in which the substrate is coated throughout and the film thickness alternates between two non-zero levels. The incident linear polarization azimuth is chosen near, but not restricted to, 45 degree(s) (measured from the plane of incidence), and the angle of incidence may be selected over a range of values. The design procedure, which uses the two-dimensional Newton-Raphson method, is applied to the SiO2-Au film- substrate system at 633 nm wavelength, as an example, and the characteristics of the various possible coatings are presented.

Anisotropic elasticity of quasi-one-component polymer nanocomposites.

PubMed

Voudouris, Panayiotis; Choi, Jihoon; Gomopoulos, Nikos; Sainidou, Rebecca; Dong, Hongchen; Matyjaszewski, Krzysztof; Bockstaller, Michael R; Fytas, George

2011-07-26

The in-plane and out-of-plane elastic properties of thin films of "quasi-one-component" particle-brush-based nanocomposites are compared to those of "classical" binary particle-polymer nanocomposite systems with near identical overall composition using Brillouin light scattering. Whereas phonon propagation is found to be independent of the propagation direction for the binary particle/polymer blend systems, a pronounced splitting of the phonon propagation velocity along the in-plane and out-of-plane film direction is observed for particle-brush systems. The anisotropic elastic properties of quasi-one-component particle-brush systems are interpreted as a consequence of substrate-induced order formation into layer-type structures and the associated breaking of the symmetry of the film. The results highlight new opportunities to engineer quasi-one-component nanocomposites with advanced control of structural and physical property characteristics based on the assembly of particle-brush materials.

Directional Carrier Transfer in Strongly Coupled Binary Nanocrystal Superlattice Films Formed by Assembly and in Situ Ligand Exchange at a Liquid–Air Interface

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wu, Yaoting; Li, Siming; Gogotsi, Natalie

Two species of monodisperse nanocrystals (NCs) can self-assemble into a variety of complex 2D and 3D periodic structures, or binary NC superlattice (BNSL) films, based on the relative number and size of the NCs. BNSL films offer great promise for both fundamental scientific studies and optoelectronic applications; however, the utility of as-assembled structures has been limited by the insulating ligands that originate from the synthesis of NCs. Here we report the application of an in situ ligand exchange strategy at a liquid–air interface to replace the long synthesis ligands with short ligands while preserving the long-range order of BNSL films.more » This approach is demonstrated for BNSL structures consisting of PbSe NCs of different size combinations and ligands of interest for photovoltaic devices, infrared detectors, and light-emitting diodes. To confirm enhanced coupling introduced by ligand exchange, we show ultrafast (~1 ps) directional carrier transfer across the type-I heterojunction formed by NCs of different sizes within ligand-exchanged BNSL films. In conclusion, this approach shows the potential promise of functional BNSL films, where the local and long-range energy landscape and electronic coupling can be adjusted by tuning NC composition, size, and interparticle spacing.« less

Reduction of Vanadium Oxide (VOx) under High Vacuum Conditions as Investigated by X-Ray Photoelectron Spectroscopy

NASA Astrophysics Data System (ADS)

Chourasia, A.

2015-03-01

Vanadium oxide thin films were formed by depositing thin films of vanadium on quartz substrates and oxidizing them in an atmosphere of oxygen. The deposition was done by the e-beam technique. The oxide films were annealed at different temperatures for different times under high vacuum conditions. The technique of x-ray photoelectron spectroscopy has been employed to study the changes in the oxidation states of vanadium and oxygen in such films. The spectral features in the vanadium 2p, oxygen 1s, and the x-ray excited Auger regions were investigated. The Auger parameter has been utilized to study the changes. The complete oxidation of elemental vanadium to V2O5 was observed to occur at 700°C. At any other temperature, a mixture of oxides consisting of V2O5 and VO2 was observed in the films. Annealing of the films resulted in the gradual loss of oxygen followed by reduction in the oxidation state from +5 to 0. The reduction was observed to depend upon the annealing temperature and the annealing time. Organized Research, TAMU-Commerce.

Electron-beam-evaporated thin films of hafnium dioxide for fabricating electronic devices

DOE PAGES

Xiao, Zhigang; Kisslinger, Kim

2015-06-17

Thin films of hafnium dioxide (HfO 2) are widely used as the gate oxide in fabricating integrated circuits because of their high dielectric constants. In this paper, the authors report the growth of thin films of HfO 2 using e-beam evaporation, and the fabrication of complementary metal-oxide semiconductor (CMOS) integrated circuits using this HfO 2 thin film as the gate oxide. The authors analyzed the thin films using high-resolution transmission electron microscopy and electron diffraction, thereby demonstrating that the e-beam-evaporation-grown HfO 2 film has a polycrystalline structure and forms an excellent interface with silicon. Accordingly, we fabricated 31-stage CMOS ringmore » oscillator to test the quality of the HfO 2 thin film as the gate oxide, and obtained excellent rail-to-rail oscillation waveforms from it, denoting that the HfO 2 thin film functioned very well as the gate oxide.« less

Effect of Si Content on Oxide Formation on Surface of Molten Fe-Cr-C Alloy Bath During Oxygen Top Blowing

NASA Astrophysics Data System (ADS)

Mihara, Ryosuke; Gao, Xu; Kim, Sun-joong; Ueda, Shigeru; Shibata, Hiroyuki; Seok, Min Oh; Kitamura, Shin-ya

2018-02-01

Using a direct observation experimental method, the oxide formation behavior on the surface of Fe-Cr-5 mass pct C-Si alloy baths during decarburization by a top-blown Ar-O2 mixture was studied. The effects of the initial Si and Cr content of the alloy, temperature, and oxygen feed ratio on oxide formation were investigated. The results showed that, for alloys without Si, oxide particles, unstable oxide films, and stable oxide films formed sequentially. The presence of Si in the alloy changed the formation behavior of stable oxide film, and increased the crucial C content when stable oxide film started to form. Increasing the temperature, decreasing the initial Cr content, and increasing the ratio of the diluting gas decreased the critical C content at which a stable oxide film started to form. In addition, the P CO and a_{{{Cr}2 {O}3 }} values at which oxides started to form were estimated using Hilty's equation and the equilibrium relation to understand the formation conditions and the role of each parameter in oxide formation.

Control of the Structure of Diffusion Layer in Carbon Steels Under Nitriding with Preliminary Deposition of Copper Oxide Catalytic Films

NASA Astrophysics Data System (ADS)

Petrova, L. G.; Aleksandrov, V. A.; Malakhov, A. Yu.

2017-07-01

The effect of thin films of copper oxide deposited before nitriding on the phase composition and the kinetics of growth of diffusion layers in carbon steels is considered. The process of formation of an oxide film involves chemical reduction of pure copper on the surface of steel specimens from a salt solution and subsequent oxidation under air heating. The oxide film exerts a catalytic action in nitriding of low- and medium-carbon steels, which consists in accelerated growth of the diffusion layer, the nitride zone in the first turn. The kinetics of the nitriding process and the phase composition of the layer are controlled by the thickness of the copper oxide precursor, i.e., the deposited copper film.

Sensitive Capacitive-type Hydrogen Sensor Based on Ni Thin Film in Different Hydrogen Concentrations.

PubMed

Pour, Ghobad Behzadi; Aval, Leila Fekri; Eslami, Shahnaz

2018-04-01

Hydrogen sensors are micro/nano-structure that are used to locate hydrogen leaks. They are considered to have fast response/recovery time and long lifetime as compared to conventional gas sensors. In this paper, fabrication of sensitive capacitive-type hydrogen gas sensor based on Ni thin film has been investigated. The C-V curves of the sensor in different hydrogen concentrations have been reported. Dry oxidation was done in thermal chemical vapor deposition furnace (TCVD). For oxidation time of 5 min, the oxide thickness was 15 nm and for oxidation time 10 min, it was 20 nm. The Ni thin film as a catalytic metal was deposited on the oxide film using electron gun deposition. Two MOS sensors were compared with different oxide film thickness and different hydrogen concentrations. The highest response of the two MOS sensors with 15 nm and 20 nm oxide film thickness in 4% hydrogen concentration was 87.5% and 65.4% respectively. The fast response times for MOS sensors with 15 nm and 20 nm oxide film thickness in 4% hydrogen concentration was 8 s and 21 s, respectively. By increasing the hydrogen concentration from 1% to 4%, the response time for MOS sensor (20nm oxide thickness), was decreased from 28s to 21s. The recovery time was inversely increased from 237s to 360s. The experimental results showed that the MOS sensor based on Ni thin film had a quick response and a high sensitivity.

Polyelectrolyte-mediated assembly of copper-phthalocyanine tetrasulfonate multilayers and the subsequent production of nanoparticulate copper oxide thin films.

PubMed

Chickneyan, Zarui Sara; Briseno, Alejandro L; Shi, Xiangyang; Han, Shubo; Huang, Jiaxing; Zhou, Feimeng

2004-07-01

An approach to producing films of nanometer-sized copper oxide particulates, based on polyelectrolyte-mediated assembly of the precursor, copper(II)phthalocyanine tetrasulfonate (CPTS), is described. Multilayered CPTS and polydiallyldimethylammonium chloride (PDADMAC) were alternately assembled on different planar substrates via the layer-by-layer (LbL) procedure. The growth of CPTS multilayers was monitored by UV-visible spectrometry and quartz crystal microbalance (QCM) measurements. Both the UV-visible spectra and the QCM data showed that a fixed amount of CPTS could be attached to the substrate surface for a given adsorption cycle. Cyclic voltammograms at the CPTS/PDADMAC-covered gold electrode exhibited a decrease in peak currents with the layer number, indicating that the permeability of CPTS multilayers on the electrodes had diminished. When these CPTS multilayered films were calcined at elevated temperatures, uniform thin films composed of nanoparticulate copper oxide could be produced. Ellipsometry showed that the thickness of copper oxide nanoparticulate films could be precisely tailored by varying the thickness of CPTS multilayer films. The morphology and roughness of CPTS multilayer and copper oxide thin films were characterized by atomic force microscopy. X-ray diffraction (XRD) measurements indicated that these thin films contained both CuO and Cu2O nanoparticles. The preparation of such copper oxide thin films with the use of metal complex precursors represents a new route for the synthesis of inorganic oxide films with a controlled thickness.

Ceramic Composite Thin Films

NASA Technical Reports Server (NTRS)

Dikin, Dmitriy A. (Inventor); Nguyen, SonBinh T. (Inventor); Ruoff, Rodney S. (Inventor); Stankovich, Sasha (Inventor)

2013-01-01

A ceramic composite thin film or layer includes individual graphene oxide and/or electrically conductive graphene sheets dispersed in a ceramic (e.g. silica) matrix. The thin film or layer can be electrically conductive film or layer depending the amount of graphene sheets present. The composite films or layers are transparent, chemically inert and compatible with both glass and hydrophilic SiOx/silicon substrates. The composite film or layer can be produced by making a suspension of graphene oxide sheet fragments, introducing a silica-precursor or silica to the suspension to form a sol, depositing the sol on a substrate as thin film or layer, at least partially reducing the graphene oxide sheets to conductive graphene sheets, and thermally consolidating the thin film or layer to form a silica matrix in which the graphene oxide and/or graphene sheets are dispersed.

Amorphous semiconducting and conducting transparent metal oxide thin films and production thereof

DOEpatents

Perkins, John; Van Hest, Marinus Franciscus Antonius Maria; Ginley, David; Taylor, Matthew; Neuman, George A.; Luten, Henry A.; Forgette, Jeffrey A.; Anderson, John S.

2010-07-13

Metal oxide thin films and production thereof are disclosed. An exemplary method of producing a metal oxide thin film may comprise introducing at least two metallic elements and oxygen into a process chamber to form a metal oxide. The method may also comprise depositing the metal oxide on a substrate in the process chamber. The method may also comprise simultaneously controlling a ratio of the at least two metallic elements and a stoichiometry of the oxygen during deposition. Exemplary amorphous metal oxide thin films produced according to the methods herein may exhibit highly transparent properties, highly conductive properties, and/or other opto-electronic properties.

Combustion synthesized indium-tin-oxide (ITO) thin film for source/drain electrodes in all solution-processed oxide thin-film transistors

NASA Astrophysics Data System (ADS)

Tue, Phan Trong; Inoue, Satoshi; Takamura, Yuzuru; Shimoda, Tatsuya

2016-06-01

We report combustion solution synthesized (SCS) indium-tin-oxide (ITO) thin film, which is a well-known transparent conductive oxide, for source/drain (S/D) electrodes in solution-processed amorphous zirconium-indium-zinc-oxide TFT. A redox-based combustion synthetic approach is applied to ITO thin film using acetylacetone as a fuel and metal nitrate as oxidizer. The structural and electrical properties of SCS-ITO precursor solution and thin films were systematically investigated with changes in tin concentration, indium metal precursors, and annealing conditions such as temperature, time, and ambient. It was found that at optimal conditions the SCS-ITO thin film exhibited high crystalline quality, atomically smooth surface (RMS ~ 4.1 Å), and low electrical resistivity (4.2 × 10-4 Ω cm). The TFT using SCS-ITO film as the S/D electrodes showed excellent electrical properties with negligible hysteresis. The obtained "on/off" current ratio, subthreshold swing factor, subthreshold voltage, and field-effect mobility were 5 × 107, 0.43 V/decade, 0.7 V, and 2.1 cm2/V s, respectively. The performance and stability of the SCS-ITO TFT are comparable to those of the sputtered-ITO TFT, emphasizing that the SCS-ITO film is a promising candidate for totally solution-processed oxide TFTs.

Photocatalytic activity of nanostructured ZnO-ZrO2 binary oxide using fluorometric method

NASA Astrophysics Data System (ADS)

Ibrahim, M. M.

2015-06-01

Evaluation of the photocatalytic activity of ZnO-ZrO2 nanomaterials using fluorescence based technique has rarely been reported. In the present work, ZnO-ZrO2 mixed oxides coupled with various ZnO dosages (0, 10, 30, 50, 70 wt%) were prepared by impregnation method. These nanomaterials were characterized by studying their structural, surface and optical properties. The photocatalytic activity in term of quantitative determination of the active oxidative species (radOH) produced on the surface of binary oxide was evaluated using fluorescent probe method. The interaction between ZnO and ZrO2 was affected on the photocatalytic efficiency of mixture. The results show that, the addition of ZnO to ZrO2 decreased the electron-hole recombination and increased the rate of radOH radicals formation. 50 wt% ZnO-ZrO2 photocatalyst exhibited much higher photocatalytic activity. The profound effect of binary oxide catalyst was generally considered due to the high surface area, small particle size, high monoclinic phase of ZrO2 content, low band gap and the presence of surface OH groups.

Method of producing solution-derived metal oxide thin films

DOEpatents

Boyle, Timothy J.; Ingersoll, David

2000-01-01

A method of preparing metal oxide thin films by a solution method. A .beta.-metal .beta.-diketonate or carboxylate compound, where the metal is selected from groups 8, 9, 10, 11, and 12 of the Periodic Table, is solubilized in a strong Lewis base to form a homogeneous solution. This precursor solution forms within minutes and can be deposited on a substrate in a single layer or a multiple layers to form a metal oxide thin film. The substrate with the deposited thin film is heated to change the film from an amorphous phase to a ceramic metal oxide and cooled.

Consequence of oxidant concentration on XPS properties of chemically synthesized polythiophene thin films

NASA Astrophysics Data System (ADS)

Kamat, Sandip V.; Chhabra, Jasvinder; Patil, V. S.; Yadav, J. B.; Puri, R. K.; Puri, Vijaya

2018-05-01

The polythiophene thin films were prepared by a wellknown chemical bath deposition technique. The deposited thin films were characterized for structural morphological properties and the adhesion of these thin films were measured by direct pull off (DPO) method, the effect of oxidant concentration on these thin films also studied. The FTIR spectra of chemically deposited polythiophene thin films shows the absorption peak at 836 cm-1 which represents c-s stretching vibrations, shifts to 869 cm-1 as the oxidant concentration increases. The band at 666 cm-1 representing c-s-c ring deformation becomes sharper and appears with a shoulder peak due to increase in oxidant concentration.

Phase Holograms In PMMA

NASA Technical Reports Server (NTRS)

Maker, Paul D.; Muller, Richard E.

1994-01-01

Complex, computer-generated phase holograms written in thin films of poly(methyl methacrylate) (PMMA) by process of electron-beam exposure followed by chemical development. Spatial variations of phase delay in holograms quasi-continuous, as distinquished from stepwise as in binary phase holograms made by integrated-circuit fabrication. Holograms more precise than binary holograms. Greater continuity and precision results in decreased scattering loss and increased imaging efficiency.

Films based on oxidized starch and cellulose from barley.

PubMed

El Halal, Shanise Lisie Mello; Colussi, Rosana; Deon, Vinícius Gonçalves; Pinto, Vânia Zanella; Villanova, Franciene Almeida; Carreño, Neftali Lenin Villarreal; Dias, Alvaro Renato Guerra; Zavareze, Elessandra da Rosa

2015-11-20

Starch and cellulose fibers were isolated from grains and the husk from barley, respectively. Biodegradable films of native starch or oxidized starches and glycerol with different concentrations of cellulose fibers (0%, 10% and 20%) were prepared. The films were characterized by morphological, mechanical, barrier, and thermal properties. Cellulose fibers isolated from the barley husk were obtained with 75% purity and high crystallinity. The morphology of the films of the oxidized starches, regardless of the fiber addition, was more homogeneous as compared to the film of the native starch. The addition of cellulose fibers in the films increased the tensile strength and decreased elongation. The water vapor permeability of the film of oxidized starch with 20% of cellulose fibers was lower than the without fibers. However the films with cellulose fibers had the highest decomposition with the initial temperature and thermal stability. The oxidized starch and cellulose fibers from barley have a good potential for use in packaging. The addition of cellulose fibers in starch films can contribute to the development of films more resistant that can be applied in food systems to maintain its integrity. Copyright © 2015 Elsevier Ltd. All rights reserved.

Oxidation and biodegradation of polyethylene films containing pro-oxidantadditives: Synergistic effects of sunlight exposure, thermal aging and fungal biodegradation

USDA-ARS?s Scientific Manuscript database

Synergistic effects of sunlight exposure, thermal aging and fungal biodegradation on the oxidation and biodegradation of linear low density poly (ethylene) PE-LLD films containing pro-oxidant were examined. To achieve oxidation and degradation, films were first exposed to the sunlight for 93 days du...

Aerosol chemical vapor deposition of metal oxide films

DOEpatents

Ott, Kevin C.; Kodas, Toivo T.

1994-01-01

A process of preparing a film of a multicomponent metal oxide including: forming an aerosol from a solution comprised of a suitable solvent and at least two precursor compounds capable of volatilizing at temperatures lower than the decomposition temperature of said precursor compounds; passing said aerosol in combination with a suitable oxygen-containing carrier gas into a heated zone, said heated zone having a temperature sufficient to evaporate the solvent and volatilize said precursor compounds; and passing said volatilized precursor compounds against the surface of a substrate, said substrate having a sufficient temperature to decompose said volatilized precursor compounds whereby metal atoms contained within said volatilized precursor compounds are deposited as a metal oxide film upon the substrate is disclosed. In addition, a coated article comprising a multicomponent metal oxide film conforming to the surface of a substrate selected from the group consisting of silicon, magnesium oxide, yttrium-stabilized zirconium oxide, sapphire, or lanthanum gallate, said multicomponent metal oxide film characterized as having a substantially uniform thickness upon said FIELD OF THE INVENTION The present invention relates to the field of film coating deposition techniques, and more particularly to the deposition of multicomponent metal oxide films by aerosol chemical vapor deposition. This invention is the result of a contract with the Department of Energy (Contract No. W-7405-ENG-36).

Effect of surface oxide films on the properties of pulse electric-current sintered metal powders

NASA Astrophysics Data System (ADS)

Xie, Guoqiang; Ohashi, Osamu; Yamaguchi, Norio; Wang, Airu

2003-11-01

Metallic powders with various thermodynamic stability oxide films (Ag, Cu, and Al powders) were sintered using a pulse electric-current sintering (PECS) process. Behavior of oxide films at powder surfaces and their effect on the sintering properties were investigated. The results showed that the sintering properties of metallic powders in the PECS process were subject to the thermodynamic stability of oxide films at particles surfaces. The oxide films at Ag powder surfaces are decomposed during sintering with the contact region between the particles being metal/metal bond. The oxide films at Cu powder surfaces are mainly broken via loading pressure at a low sintering temperature. At a high sintering temperature, they are mainly dissolved in the parent metal, and the contact regions turn into the direct metal/metal bonding. Excellent sintering properties can be received. The oxide films at Al powder surfaces are very stable, and cannot be decomposed and dissolved, but broken by plastic deformation of particles under loading pressure at experimental temperatures. The interface between particles is partially bonded via the direct metal/metal bonding making it difficult to achieve good sintered properties.

Thermally evaporated mechanically hard tin oxide thin films for opto-electronic apllications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tripathy, Sumanta K.; Rajeswari, V. P.

2014-01-28

Tungsten doped tin oxide (WTO) and Molybdenum doped tin oxide (MoTO) thin film were deposited on corn glass by thermal evaporation method. The films were annealed at 350°C for one hour. Structural analysis using Xray diffraction data shows both the films are polycrystalline in nature with monoclinic structure of tin oxide, Sn{sub 3}O{sub 4}, corresponding to JCPDS card number 01-078-6064. SEM photograph showed that both the films have spherical grains with size in the range of 20–30 nm. Compositional analysis was carried out using EDS which reveals the presence of Sn, O and the dopant Mo/W only thereby indicating themore » absence of any secondary phase in the films. The films are found to contain nearly 6 wt% of Mo, 8 wt% of W as dopants respectively. The transmission pattern for both the films in the spectral range 200 – 2000 nm shows that W doping gives a transparency of nearly 80% from 380 nm onwards while Mo doping has less transparency of 39% at 380nm. Film hardness measurement using Triboscope shows a film hardness of about 9–10 GPa for both the films. It indicates that W or M doping in tin oxide provides the films the added advantage of withstanding the mechanical wear and tear due to environmental fluctuations By optimizing the optical and electrical properties, W/Mo doped tin oxide films may be explored as window layers in opto-electronic applications such as solar cells.« less

Preparation of transparent conductors ferroelectric memory materials and ferrites

DOEpatents

Bhattacharya, R.N.; Ginley, D.S.

1998-07-28

A process is described for the preparation by electrodeposition of metal oxide film and powder compounds for ferroelectric memory materials and ferrites wherein the metal oxide includes a plurality of metals. The process comprises providing an electrodeposition bath, providing soluble salts of the metals to this bath, electrically energizing the bath to thereby cause formation of a recoverable film of metal on the electrode, recovering the resultant film as a film or a powder, and recovering powder formed on the floor of the bath. The films and powders so produced are subsequently annealed to thereby produce metal oxide for use in electronic applications. The process can be employed to produce metal-doped metal oxide film and powder compounds for transparent conductors. The process for preparation of these metal-doped metal oxides follows that described above.

The optical and electrochemical properties of electrochromic films: WO3+xV2O5

NASA Astrophysics Data System (ADS)

Li, Zhuying; Liu, Hui; Liu, Ye; Yang, Shaohong; Liu, Yan; Wang, Chong

2010-05-01

Since Deb's experiment in 1973 on the electrochromic effect, transmissive electrochromic films exhibit outstanding potential as energy efficient window controls which allow dynamic control of the solar energy transmission. These films with non-volatile memory, once in the coloured state, remain in the same state even after removal of the field. The optical and electrochemical properties of electrochromic films using magnetron sputter deposition tungsten oxide thin films and vanadium oxide doped tungsten-vanadium oxide thin films on ITO coated glass were investigated. From the UV region of the transmittance spectra, the optical band gap energy from the fundamental absorption edge can be determined. And the Cyclic voltammograms of these thin films in 1 mol LiClO4 propylene carbonate electrolyte (LIPC) were measured and analysed. The anode electrochromic V2O5 doped cathode electrochromic WO3 could make films colour changing while the transmittance of films keeped invariance. These performance characteristics make tungstenvanadium oxide colour changeably thin films are suitable for electrochromic windows applications.

Performance of iron-chromium-aluminum alloy surface coatings on Zircaloy 2 under high-temperature steam and normal BWR operating conditions

NASA Astrophysics Data System (ADS)

Zhong, Weicheng; Mouche, Peter A.; Han, Xiaochun; Heuser, Brent J.; Mandapaka, Kiran K.; Was, Gary S.

2016-03-01

Iron-chromium-aluminum (FeCrAl) coatings deposited on Zircaloy 2 (Zy2) and yttria-stabilized zirconia (YSZ) by magnetron sputtering have been tested with respect to oxidation weight gain in high-temperature steam. In addition, autoclave testing of FeCrAl-coated Zy2 coupons under pressure-temperature-dissolved oxygen coolant conditions representative of a boiling water reactor (BWR) environment has been performed. Four different FeCrAl compositions have been tested in 700 °C steam; compositions that promote alumina formation inhibited oxidation of the underlying Zy2. Parabolic growth kinetics of alumina on FeCrAl-coated Zy2 is quantified via elemental depth profiling. Autoclave testing under normal BWR operating conditions (288 °C, 9.5 MPa with normal water chemistry) up to 20 days demonstrates observable weight gain over uncoated Zy2 simultaneously exposed to the same environment. However, no FeCrAl film degradation was observed. The 900 °C eutectic in binary Fe-Zr is addressed with the FeCrAl-YSZ system.

Iridium Oxide pH Sensor Based on Stainless Steel Wire for pH Mapping on Metal Surface

NASA Astrophysics Data System (ADS)

Shahrestani, S.; Ismail, M. C.; Kakooei, S.; Beheshti, M.; Zabihiazadboni, M.; Zavareh, M. A.

2018-03-01

A simple technique to fabricate the iridium oxide pH sensor is useful in several applications such as medical, food processing and engineering material where it is able to detect the changes of pH. Generally, the fabrication technique can be classified into three types: electro-deposition iridium oxide film (EIrOF), activated iridium oxide film (AIROF) and sputtering iridium oxide film (SIROF). This study focuses on fabricating electrode, calibration and test. Electro-deposition iridium oxide film is a simple and effective method of fabricating this kind of sensor via cyclic voltammetry process. The iridium oxide thick film was successfully electrodeposited on the surface of stainless steel wire with 500 cycles of sweep potential. A further analysis under FESEM shows detailed image of iridium oxide film which has cauliflower-liked microstructure. EDX analysis shows the highest element present are iridium and oxygen which concluded that the process is successful. The iridium oxide based pH sensor has shown a good performance in comparison to conventional glass pH sensor when it is being calibrated in buffer solutions with 2, 4, 7 and 9 pH values. The iridium oxide pH sensor is specifically designed to measure the pH on the surface of metal plate.

Accelerated evaporation of water on graphene oxide.

PubMed

Wan, Rongzheng; Shi, Guosheng

2017-03-29

Using molecular dynamics simulations, we show that the evaporation of nanoscale volumes of water on patterned graphene oxide is faster than that on homogeneous graphene oxide. The evaporation rate of water is insensitive to variation in the oxidation degree of the oxidized regions, so long as the water film is only distributed on the oxidized regions. The evaporation rate drops when the water film spreads onto the unoxidized regions. Further analysis showed that varying the oxidation degree observably changed the interaction between the outmost water molecules and the solid surface, but the total interaction for the outmost water molecules only changed a very limited amount due to the correspondingly regulated water-water interaction when the water film is only distributed on the oxidized regions. When the oxidation degree is too low and some unoxidized regions are also covered by the water film, the thickness of the water film decreases, which extends the lifetime of the hydrogen bonds for the outmost water molecules and lowers the evaporation rate of the water. The insensitivity of water evaporation to the oxidation degree indicates that we only need to control the scale of the unoxidized and oxidized regions for graphene oxide to regulate the evaporation of nanoscale volumes of water.

Characterizations of the TiO2-x films synthesized by e-beam evaporation for endovascular applications

NASA Astrophysics Data System (ADS)

Lin, Zeng; Lee, In-Seop; Choi, Yoon-Jeong; Noh, In-Sup; Chung, Sung-Min

2009-02-01

Different chemical states of titanium oxide films were deposited on commercially pure Ti (CP Ti) by electron-beam evaporation at different oxygen flow rates to examine a possibility of their applications to endovascular stents. The surface morphology, chemical composition and crystal structure of the obtained titanium oxide films were analyzed by FE-SEM, XPS and XRD, respectively. As a function of the deposition parameters employed, the obtained titanium oxide films demonstrated different mixtures of anatase phase, Ti2O3 and TiO. By the formation of titanium oxide film on the CP Ti plate, the contact angle was decreased and the cellular activity of porcine aortic smooth muscle cells was increased. Post-deposition annealing was also found to be an important factor to achieve advantageous biocompatibility. When haemocompatibility was investigated by observing adhesion of blood platelets from platelet-rich plasma, less platelet adhesion was observed on titanium oxide films. These results indicated that titanium oxide film synthesized by e-beam evaporation could be applicable to coronary stents.

An XPS study of the adherence of refractory carbide, silicide, and boride RF-sputtered wear-resistant coatings. [X-ray Photoelectron Spectroscopy of steel surfaces

NASA Technical Reports Server (NTRS)

Brainard, W. A.; Wheeler, D. R.

1978-01-01

Radio frequency sputtering was used to deposit refractory carbide, silicide, and boride coatings on 440-C steel substrates. Both sputter etched and pre-oxidized substrates were used and the films were deposited with and without a substrate bias. The composition of the coatings was determined as a function of depth by X-ray photoelectron spectroscopy combined with argon ion etching. Friction and wear tests were conducted to evaluate coating adherence. In the interfacial region there was evidence that bias may produce a graded interface for some compounds. Biasing, while generally improving bulk film stoichiometry, can adversely affect adherence by removing interfacial oxide layers. Oxides of all film constituents except carbon and iron were present in all cases but the iron oxide coverage was only complete on the preoxidized substrates. The film and iron oxides were mixed in the MoSi2 and Mo2C films but layered in the Mo2B5 films. In the case of mixed oxides, preoxidation enhanced film adherence. In the layered case it did not.

Solvent-molecule-mediated manipulation of crystalline grains for efficient planar binary lead and tin triiodide perovskite solar cells

NASA Astrophysics Data System (ADS)

Zhu, Leize; Yuh, Brian; Schoen, Stefan; Li, Xinpei; Aldighaithir, Mohammed; Richardson, Beau J.; Alamer, Ahmed; Yu, Qiuming

2016-03-01

Binary lead and tin perovskites offer the benefits of narrower band gaps for broader adsorption of solar spectrum and better charge transport for higher photocurrent density. Here, we report the growth of large, smooth crystalline grains of bianry lead and tin triiodide perovskite films via a two-step solution process with thermal plus solvent vapor-assisted thermal annealing. The crystalline SnxPb1-xI2 films formed in the first step served as the templates for the formation of crystalline CH3NH3SnxPb1-xI3 films during the second step interdiffusion of methylammonium iodide (MAI). Followed by dimethylsulfoxide (DMSO) vapor-assisted thermal annealing, small, faceted perovskite grains grew into large, smooth grains via the possible mechanism involving bond breaking and reforming mediated by DMSO solvent molecules. The absorption onset was extended to 950 and 1010 nm for the CH3NH3SnxPb1-xI3 perovskites with x = 0.1 and 0.25, respectively. The highest PCE of 10.25% was achieved from the planar perovskite solar cell with the CH3NH3Sn0.1Pb0.9I3 layer prepared via the thermal plus DMSO vapor-assisted thermal annealing. This research provides a way to control and manipulate film morphology, grain size, and especially the distribution of metal cations in binary metal perovskite layers, which opens an avenue to grow perovskite materials with desired properties to enhance device performance.Binary lead and tin perovskites offer the benefits of narrower band gaps for broader adsorption of solar spectrum and better charge transport for higher photocurrent density. Here, we report the growth of large, smooth crystalline grains of bianry lead and tin triiodide perovskite films via a two-step solution process with thermal plus solvent vapor-assisted thermal annealing. The crystalline SnxPb1-xI2 films formed in the first step served as the templates for the formation of crystalline CH3NH3SnxPb1-xI3 films during the second step interdiffusion of methylammonium iodide (MAI). Followed by dimethylsulfoxide (DMSO) vapor-assisted thermal annealing, small, faceted perovskite grains grew into large, smooth grains via the possible mechanism involving bond breaking and reforming mediated by DMSO solvent molecules. The absorption onset was extended to 950 and 1010 nm for the CH3NH3SnxPb1-xI3 perovskites with x = 0.1 and 0.25, respectively. The highest PCE of 10.25% was achieved from the planar perovskite solar cell with the CH3NH3Sn0.1Pb0.9I3 layer prepared via the thermal plus DMSO vapor-assisted thermal annealing. This research provides a way to control and manipulate film morphology, grain size, and especially the distribution of metal cations in binary metal perovskite layers, which opens an avenue to grow perovskite materials with desired properties to enhance device performance. Electronic supplementary information (ESI) available. See DOI: 10.1039/c6nr00301j

X-ray analyses of thermally grown and reactively sputtered tantalum oxide films on NiTi alloy

NASA Astrophysics Data System (ADS)

McNamara, Karrina; Tofail, Syed A. M.; Conroy, Derek; Butler, James; Gandhi, Abbasi A.; Redington, Wynette

2012-08-01

Sputter deposition of tantalum (Ta) on the surface of NiTi alloy is expected to improve the alloy's corrosion resistance and biocompatibility. Tantalum is a well-known biomaterial which is not affected by body fluids and is not irritating to human tissue. Here we compare the oxidation chemistry crystal structure evolution of tantalum oxide films grown on NiTi by reactive O2 sputtering and by thermal oxidation of sputter deposited Ta films. The effect of sputtering parameters and post-sputtering treatments on the morphology, oxidation state and crystal structure of the tantalum oxide layer have been investigated by field-emission scanning electron microscopy (FE-SEM), X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD). The study has found that it may be better to avoid oxidation at and above 600 °C. The study establishes that reactive sputtering in presence of low oxygen mixture yields thicker film with better control of the film quality except that the surface oxidation state of Ta is slightly lower.

Spin-on metal oxide materials with high etch selectivity and wet strippability

NASA Astrophysics Data System (ADS)

Yao, Huirong; Mullen, Salem; Wolfer, Elizabeth; McKenzie, Douglas; Rahman, Dalil; Cho, JoonYeon; Padmanaban, Munirathna; Petermann, Claire; Hong, SungEun; Her, YoungJun

2016-03-01

Metal oxide or metal nitride films are used as hard mask materials in semiconductor industry for patterning purposes due to their excellent etch resistances against the plasma etches. Chemical vapor deposition (CVD) or atomic layer deposition (ALD) techniques are usually used to deposit the metal containing materials on substrates or underlying films, which uses specialized equipment and can lead to high cost-of-ownership and low throughput. We have reported novel spin-on coatings that provide simple and cost effective method to generate metal oxide films possessing good etch selectivity and can be removed by chemical agents. In this paper, new spin-on Al oxide and Zr oxide hard mask formulations are reported. The new metal oxide formulations provide higher metal content compared to previously reported material of specific metal oxides under similar processing conditions. These metal oxide films demonstrate ultra-high etch selectivity and good pattern transfer capability. The cured films can be removed by various chemical agents such as developer, solvents or wet etchants/strippers commonly used in the fab environment. With high metal MHM material as an underlayer, the pattern transfer process is simplified by reducing the number of layers in the stack and the size of the nano structure is minimized by replacement of a thicker film ACL. Therefore, these novel AZ® spinon metal oxide hard mask materials can potentially be used to replace any CVD or ALD metal, metal oxide, metal nitride or spin-on silicon-containing hard mask films in 193 nm or EUV process.

Nanostructured antistatic and antireflective thin films made of indium tin oxide and silica over-coat layer

NASA Astrophysics Data System (ADS)

Cho, Young-Sang; Hong, Jeong-Jin; Yang, Seung-Man; Choi, Chul-Jin

2010-08-01

Stable dispersion of colloidal indium tin oxide nanoparticles was prepared by using indium tin oxide nanopowder, organic solvent, and suitable dispersants through attrition process. Various comminution parameters during the attrition step were studied to optimize the process for the stable dispersion of indium tin oxide sol. The transparent and conductive films were fabricated on glass substrate using the indium tin oxide sol by spin coating process. To obtain antireflective function, partially hydrolyzed alkyl silicate was deposited as over-coat layer on the pre-fabricated indium tin oxide film by spin coating technique. This double-layered structure of the nanostructured film was characterized by measuring the surface resistance and reflectance spectrum in the visible wavelength region. The final film structure was enough to satisfy the TCO regulations for EMI shielding purposes.

Perovskite solar cell with an efficient TiO₂ compact film.

PubMed

Ke, Weijun; Fang, Guojia; Wang, Jing; Qin, Pingli; Tao, Hong; Lei, Hongwei; Liu, Qin; Dai, Xin; Zhao, Xingzhong

2014-09-24

A perovskite solar cell with a thin TiO2 compact film prepared by thermal oxidation of sputtered Ti film achieved a high efficiency of 15.07%. The thin TiO2 film prepared by thermal oxidation is very dense and inhibits the recombination process at the interface. The optimum thickness of the TiO2 compact film prepared by thermal oxidation is thinner than that prepared by spin-coating method. Also, the TiO2 compact film and the TiO2 porous film can be sintered at the same time. This one-step sintering process leads to a lower dark current density, a lower series resistance, and a higher recombination resistance than those of two-step sintering. Therefore, the perovskite solar cell with the TiO2 compact film prepared by thermal oxidation has a higher short-circuit current density and a higher fill factor.

Laser-Induced, Local Oxidation of Copper Nanoparticle Films During Raman Measurements

NASA Astrophysics Data System (ADS)

Hight Walker, Angela R.; Cheng, Guangjun; Calizo, Irene

2011-03-01

The optical properties of gold and silver nanoparticles and their films have been thoroughly investigated as surface enhanced Raman scattering (SERS) substrates and chemical reaction promoters. Similar to gold and silver nanoparticles, copper nanoparticles exhibit distinct plasmon absorptions in the visible region. The work on copper nanoparticles and their films is limited due to their oxidization in air. However, their high reactivity actually provides an opportunity to exploit the laser-induced thermal effect and chemical reactions of these nanoparticles. Here, we present our investigation of the local oxidation of a copper nanoparticle film induced by a visible laser source during Raman spectroscopic measurements. The copper nanoparticle film is prepared by drop-casting chemically synthesized copper colloid onto silicon oxide/silicon substrate. The local oxidation induced by visible lasers in Raman spectroscopy is monitored with the distinct scattering peaks for copper oxides. Optical microscopy and scanning electron microscopy have been used to characterize the laser-induced morphological changes in the film. The results of this oxidation process with different excitation wavelengths and different laser powers will be presented.

Oxide-based thin film transistors for flexible electronics

NASA Astrophysics Data System (ADS)

He, Yongli; Wang, Xiangyu; Gao, Ya; Hou, Yahui; Wan, Qing

2018-01-01

The continuous progress in thin film materials and devices has greatly promoted the development in the field of flexible electronics. As one of the most common thin film devices, thin film transistors (TFTs) are significant building blocks for flexible platforms. Flexible oxide-based TFTs are well compatible with flexible electronic systems due to low process temperature, high carrier mobility, and good uniformity. The present article is a review of the recent progress and major trends in the field of flexible oxide-based thin film transistors. First, an introduction of flexible electronics and flexible oxide-based thin film transistors is given. Next, we introduce oxide semiconductor materials and various flexible oxide-based TFTs classified by substrate materials including polymer plastics, paper sheets, metal foils, and flexible thin glass. Afterwards, applications of flexible oxide-based TFTs including bendable sensors, memories, circuits, and displays are presented. Finally, we give conclusions and a prospect for possible development trends. Project supported in part by the National Science Foundation for Distinguished Young Scholars of China (No. 61425020), in part by the National Natural Science Foundation of China (No. 11674162).

Chirality recognition in the glycidol···propylene oxide complex: a rotational spectroscopic study.

PubMed

Thomas, Javix; Sunahori, Fumie X; Borho, Nicole; Xu, Yunjie

2011-04-11

Chirality recognition in the hydrogen-bonded glycidol···propylene oxide complex has been studied by using rotational spectroscopy and ab initio calculations. An extensive conformational search has been performed for this binary adduct at the MP2/6-311++G(d,p) level of theory and a total of 28 homo- and heterochiral conformers were identified. The eight binary conformers, built of the two dominant glycidol monomeric conformers, g-G+ and g+G-, were predicted to be the most stable ones. Jet-cooled rotational spectra of six out of the eight conformers were observed and unambiguously assigned for the first time. The experimental stability ordering has been obtained and compared with the ab initio predictions. The relative stability of the two dominant glycidol monomeric conformers is reversed in some cases when binding to propylene oxide. The contributions of monomeric energy, deformation energy, and binary intermolecular interaction energy to the relative stability of the binary conformers are discussed. Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Determination of Insulator-to-Semiconductor Transition in Sol-Gel Oxide Semiconductors Using Derivative Spectroscopy.

PubMed

Lee, Woobin; Choi, Seungbeom; Kim, Kyung Tae; Kang, Jingu; Park, Sung Kyu; Kim, Yong-Hoon

2015-12-23

We report a derivative spectroscopic method for determining insulator-to-semiconductor transition during sol-gel metal-oxide semiconductor formation. When an as-spun sol-gel precursor film is photochemically activated and changes to semiconducting state, the light absorption characteristics of the metal-oxide film is considerable changed particularly in the ultraviolet region. As a result, a peak is generated in the first-order derivatives of light absorption ( A' ) vs. wavelength (λ) plots, and by tracing the peak center shift and peak intensity, transition from insulating-to-semiconducting state of the film can be monitored. The peak generation and peak center shift are described based on photon-energy-dependent absorption coefficient of metal-oxide films. We discuss detailed analysis method for metal-oxide semiconductor films and its application in thin-film transistor fabrication. We believe this derivative spectroscopy based determination can be beneficial for a non-destructive and a rapid monitoring of the insulator-to-semiconductor transition in sol-gel oxide semiconductor formation.

Nickel-silver alloy electrocatalysts for hydrogen evolution and oxidation in an alkaline electrolyte.

PubMed

Tang, Maureen H; Hahn, Christopher; Klobuchar, Aidan J; Ng, Jia Wei Desmond; Wellendorff, Jess; Bligaard, Thomas; Jaramillo, Thomas F

2014-09-28

The development of improved catalysts for the hydrogen evolution reaction (HER) and hydrogen oxidation reaction (HOR) in basic electrolytes remains a major technical obstacle to improved fuel cells, water electrolyzers, and other devices for electrochemical energy storage and conversion. Based on the free energy of adsorbed hydrogen intermediates, theory predicts that alloys of nickel and silver are active for these reactions. In this work, we synthesize binary nickel-silver bulk alloys across a range of compositions and show that nickel-silver alloys are indeed more active than pure nickel for hydrogen evolution and, possibly, hydrogen oxidation. To overcome the mutual insolubility of silver and nickel, we employ electron-beam physical vapor codeposition, a low-temperature synthetic route to metastable alloys. This method also produces flat and uniform films that facilitate the measurement of intrinsic catalytic activity with minimal variations in the surface area, ohmic contact, and pore transport. Rotating-disk-electrode measurements demonstrate that the hydrogen evolution activity per geometric area of the most active catalyst in this study, Ni0.75Ag0.25, is approximately twice that of pure nickel and has comparable stability and hydrogen oxidation activity. Our experimental results are supported by density functional theory calculations, which show that bulk alloying of Ni and Ag creates a variety of adsorption sites, some of which have near-optimal hydrogen binding energy.

Synthesis and characterization of binary ZnO-SnO2 (ZTO) thin films by e-beam evaporation technique

NASA Astrophysics Data System (ADS)

Bibi, Shagufta; Shah, A.; Mahmood, Arshad; Ali, Zahid; Raza, Qaisar; Aziz, Uzma; Haneef; Waheed, Abdul; Shah, Ziaullah

2018-04-01

The binary ZnO-SnO2 (ZTO) thin films with varying SnO2 concentrations (5, 10, 15, and 20 wt%) were grown on glass substrate by e-beam evaporation technique. The prepared ZTO films were annealed at 400 °C in air. These films were then characterized to investigate their structural, optical, and electrical properties as a function of SnO2 concentration. XRD analysis reveals that the crystallinity of the film decreases with the addition of SnO2 and it transforms to an amorphous structure at a composition of 40% SnO2 and 60% ZnO. Morphology of the films was examined by atomic force microscopy which points out that surface roughness of the films decreases with the increasing of SnO2 in the film. Optical properties such as optical transparency, band-gap energy, and optical constants of these films were examined by spectrophotometer and spectroscopic Ellipsometer. It was observed that the average optical transmission of mixed films improves with incorporation of SnO2. In addition, the band-gap energy of the films was determined to be in the range of 3.37-3.7 eV. Furthermore, it was found that the optical constants (n and k) decrease with the addition of SnO2. Similarly, it is observed that the electrical resistivity increases nonlinearly with the increase in SnO2 in ZnO-SnO2 thin films. However, it is noteworthy that the highest figure of merit (FOM) value, i.e., 55.87 × 10-5 Ω-1, is obtained for ZnO-SnO2 (ZTO) thin film with 40 wt% of SnO2 composition. Here, we suggest that ZnO-SnO2 (ZTO) thin film with composition of 60:40 wt% can be used as an efficient TCO film due to the improved transmission, and reduced RMS value and highest FOM value.

Electrochemical generation of oxygen. 1: The effects of anions and cations on hydrogen chemisorption and anodic oxide film formation on platinum electrode. 2: The effects of anions and cations on oxygen generation on platinum electrode

NASA Technical Reports Server (NTRS)

Huang, C. J.; Yeager, E.; Ogrady, W. E.

1975-01-01

The effects were studied of anions and cations on hydrogen chemisorption and anodic oxide film formation on Pt by linear sweep voltammetry, and on oxygen generation on Pt by potentiostatic overpotential measurement. The hydrogen chemisorption and anodic oxide film formation regions are greatly influenced by anion adsorption. In acids, the strongly bound hydrogen occurs at more cathodic potential when chloride and sulfate are present. Sulfate affects the initial phase of oxide film formation by produced fine structure while chloride retards the oxide-film formation. In alkaline solutions, both strongly and weakly bound hydrogen are influenced by iodide, cyanide, and barium and calcium cations. These ions also influence the oxide film formation. Factors considered to explain these effects are discussed. The Tafel slope for oxygen generation was found to be independent on the oxide thickness and the presence of cations or anions. The catalytic activity indicated by the exchange current density was observed decreasing with increasing oxide layer thickness, only a minor dependence on the addition of certain cations and anions was found.

Electro-optical properties of the metal oxide-carbon thin film system of CdO-LCC

NASA Astrophysics Data System (ADS)

Kokshina, A. V.; Smirnov, A. V.; Razina, A. G.

2016-08-01

This article presents the results of a study electrical and optical properties of the thin film system of CdO-LCC. Cadmium oxide films were obtained by method of thermal oxidation. CdO-LCC thin film system was produced by applying on a CdO film a linear chain carbon film in thickness of 100 nm using the ion-plasma method, after which the obtained system was annealed. The studies showed that the obtained CdO-LCC films are quite transparent in the visible region; it has polycrystalline structure, thickness around 300 nm, the band gap to 2.3 eV. The obtained thin film system has photosensitive properties.

Subtractive Plasma-Assisted-Etch Process for Developing High Performance Nanocrystalline Zinc-Oxide Thin-Film-Transistors

DTIC Science & Technology

2015-03-26

THIN - FILM - TRANSISTORS THESIS Thomas M. Donigan, First Lieutenant, USAF AFIT-ENG-MS-15-M-027 DEPARTMENT OF THE AIR FORCE AIR UNIVERSITY AIR...DEVELOPING HIGH PERFORMANCE NANOCRYSTALLINE ZINC-OXIDE THIN - FILM - TRANSISTORS THESIS Presented to the Faculty Department of Electrical and...15-M-027 SUBTRACTIVE PLASMA-ASSISTED-ETCH PROCESS FOR DEVELOPING HIGH PERFORMANCE NANOCRYSTALLINE ZINC-OXIDE THIN - FILM - TRANSISTORS

Bandgap-Engineered Zinc-Tin-Oxide Thin Films for Ultraviolet Sensors.

PubMed

Cheng, Tien-Hung; Chang, Sheng-Po; Chang, Shoou-Jinn

2018-07-01

Zinc-tin-oxide thin-film transistors were prepared by radio frequency magnetron co-sputtering, while an identical zinc-tin-oxide thin film was deposited simultaneously on a clear glass substrate to facilitate measurements of the optical properties. When we adjusted the deposition power of ZnO and SnO2, the bandgap of the amorphous thin film was dominated by the deposition power of SnO2. Since the thin-film transistor has obvious absorption in the ultraviolet region owing to the wide bandgap, the drain current increases with the generation of electron-hole pairs. As part of these investigations, a zinc-tin-oxide thin-film transistor has been fabricated that appears to be very promising for ultraviolet applications.

The effect of Argon pressure dependent V thin film on the phase transition process of (020) VO2 thin film

NASA Astrophysics Data System (ADS)

Meng, Yifan; Huang, Kang; Tang, Zhou; Xu, Xiaofeng; Tan, Zhiyong; Liu, Qian; Wang, Chunrui; Wu, Binhe; Wang, Chang; Cao, Juncheng

2018-01-01

It has been proved challenging to fabricate the single crystal orientation of VO2 thin film by a simple method. Based on chemical reaction thermodynamic and crystallization analysis theory, combined with our experimental results, we find out that when stoichiometric number of metallic V in the chemical equation is the same, the ratio of metallic V thin film surface average roughness Ra to thin film average particle diameter d decreases with the decreasing sputtering Argon pressure. Meanwhile, the oxidation reaction equilibrium constant K also decreases, which will lead to the increases of oxidation time, thereby the crystal orientation of the VO2 thin film will also become more uniform. By sputtering oxidation coupling method, metallic V thin film is deposited on c-sapphire substrate at 1 × 10-1 Pa, and then oxidized in the air with the maximum oxidation time of 65s, high oriented (020) VO2 thin film has been fabricated successfully, which exhibits ∼4.6 orders sheet resistance change across the metal-insulator transition.

A facile fabrication of chemically converted graphene oxide thin films and their uses as absorber materials for solar cells

NASA Astrophysics Data System (ADS)

Adelifard, Mehdi; Darudi, Hosein

2016-07-01

There is a great interest in the use of graphene sheets in thin film solar cells with low-cost and good-optoelectronic properties. Here, the production of absorbent conductive reduced graphene oxide (RGO) thin films was investigated. RGO thin films were prepared from spray-coated graphene oxide (GO) layers at various substrate temperature followed by a simple hydrazine-reducing method. The structural, morphological, optical, and electrical characterizations of graphene oxide (GO) and RGO thin films were investigated. X-ray diffraction analysis showed a phase shift from GO to RGO due to hydrazine treatment, in agreement with the FTIR spectra of the layers. FESEM images clearly exhibited continuous films resulting from the overlap of graphene nanosheets. The produced low-cost thin films had high absorption coefficient up to 1.0 × 105 cm-1, electrical resistance as low as 0.9 kΩ/sq, and effective optical band gap of about 1.50 eV, close to the optimum value for solar conversion. The conductive absorbent properties of the reduced graphene oxide thin films would be useful to develop photovoltaic cells.

Correlation between surface morphology and electrical properties of VO2 films grown by direct thermal oxidation method

NASA Astrophysics Data System (ADS)

Yoon, Joonseok; Park, Changwoo; Park, Sungkyun; Mun, Bongjin Simon; Ju, Honglyoul

2015-10-01

We investigate surface morphology and electrical properties of VO2 films fabricated by direct thermal oxidation method. The VO2 film prepared with oxidation temperature at 580 °C exhibits excellent qualities of VO2 characteristics, e.g. a metal-insulator transition (MIT) near 67 °C, a resistivity ratio of ∼2.3 × 104, and a bandgap of 0.7 eV. The analysis of surface morphology with electrical resistivity of VO2 films reveals that the transport properties of VO2 films are closely related to the grain size and surface roughness that vary with oxidation annealing temperatures.

Application of Oxidation to the Structural Characterization of Sic Epitaxial Films

NASA Technical Reports Server (NTRS)

Powell, J. A.; Petit, J. B.; Edgar, J. H.; Jenkins, I. G.; Matus, L. G.

1991-01-01

Both 3C-SiC and 6H-SiC single-crystal films can be grown on vicinal (0001) 6H-SiC wafers. It is found that oxidation can be a powerful diagnostic process for (1) 'color mapping' the 3C and 6H regions of these films, (2) decorating stacking faults in the films, (3) enhancing the decoration of double positioning boundaries, and (4) decorating polishing damage. Contrary to previously published oxidation results, proper oxidation conditions can yield interference colors that provide a definitive map of the polytype distribution for both the Si face and C face of SiC films.

The role of polymer films on the oxidation of magnetite nanoparticles

DOE Office of Scientific and Technical Information (OSTI.GOV)

Letti, C.J.; Paterno, L.G.; Pereira-da-Silva, M.A.

2017-02-15

A detailed investigation about the role of polymer films on the oxidation process of magnetite nanoparticles (∼7 nm diameter), under laser irradiation is performed employing micro Raman spectroscopy. To support this investigation, Fe{sub 3}O{sub 4}-np are synthesized by the co-precipitation method and assembled layer-by-layer with sodium sulfonated polystyrene (PSS). Polymer films (Fe{sub 3}O{sub 4}-np/PSS){sub n} with n=2,3,5,7,10 and 25 bilayers are employed as a model system to study the oxidation process under laser irradiation. Raman data are further processed by principal component analysis. Our findings suggest that PSS protects Fe{sub 3}O{sub 4}-np from oxidation when compared to powder samples, evenmore » for the sample with the greater number of bilayers. Further, the oxidation of magnetite to maghemite occurs preferably for thinner films up to 7 bilayers, while the onset for the formation of the hematite phase depends on the laser intensity for thicker films. Water takes part on the oxidation processes of magnetite, the oxidation/phase transformation of Fe{sub 3}O{sub 4}-np is intensified in films with more bilayers, since more water is included in those films. Encapsulation of Fe{sub 3}O{sub 4}-np by PSS in layer-by-layer films showed to be very efficient to avoid the oxidation process in nanosized magnetite. - Graphical abstract: Encapsulation of Fe{sub 3}O{sub 4}-np by PSS in layer-by-layer films avoids the oxidation and phase transformation of nanosized magnetite. - Highlights: • (Fe{sub 3}O{sub 4}-np/PSS){sub n} nanofilms, with n=2 up to 25, where layer-by-layer assembled. • The influence of film architecture on the Fe{sub 3}O{sub 4}-np oxidation was investigated through Raman spectroscopy. • Encapsulation of Fe{sub 3}O{sub 4}-np by PSS showed to be very efficient to avoid the Fe{sub 3}O{sub 4}-np oxidation.« less

Oxidation of diesel soot on binary oxide CuCr(Co)-based monoliths.

PubMed

Soloviev, Sergiy O; Kapran, Andriy Y; Kurylets, Yaroslava P

2015-02-01

Binary oxide systems (CuCr2O4, CuCo2O4), deposited onto cordierite monoliths of honeycomb structure with a second support (finely dispersed Al2O3), were prepared as filters for catalytic combustion of diesel soot using internal combustion engine's gas exhausts (O2, NOx, H2O, CO2) and O3 as oxidizing agents. It is shown that the second support increases soot capacity of aforementioned filters, and causes dispersion of the particles of spinel phases as active components enhancing thereby catalyst activity and selectivity of soot combustion to CO2. Oxidants used can be arranged with reference to decreasing their activity in a following series: O3≫NO2>H2O>NO>O2>CO2. Ozone proved to be the most efficient oxidizing agent: the diesel soot combustion by O3 occurs intensively (in the presence of copper chromite based catalyst) even at closing to ambient temperatures. Results obtained give a basis for the conclusion that using a catalytic coating on soot filters in the form of aforementioned binary oxide systems and ozone as the initiator of the oxidation processes is a promising approach in solving the problem of comprehensive purification of automotive exhaust gases at relatively low temperatures, known as the "cold start" problem. Copyright © 2014. Published by Elsevier B.V.

Impact of acid and oxidative modifications, single or dual, of sorghum starch on biodegradable films.

PubMed

Biduski, Bárbara; Silva, Francine Tavares da; Silva, Wyller Max da; Halal, Shanise Lisie de Mello El; Pinto, Vania Zanella; Dias, Alvaro Renato Guerra; Zavareze, Elessandra da Rosa

2017-01-01

The objective of this study was to evaluate the effects of acid and oxidation modifications on sorghum starch, as well as the effect of dual modification of starch on the physical, morphological, mechanical, and barrier properties of biodegradable films. The acid modification was performed with 3% lactic acid and the oxidation was performed with 1.5% active chlorine. For dual modification, the acid modification was performed first, followed by oxidation under the same conditions as above. Both films of the oxidized starches, single and dual, had increased stiffness, providing a higher tensile strength and lower elongation when compared to films based on native and single acid modified starches. However, the dual modification increased the water vapor permeability of the films without changing their solubility. The increase in sorghum starch concentration in the filmogenic solution increased the thickness, water vapor permeability, and elongation of the films. Copyright © 2016. Published by Elsevier Ltd.

Spray deposited gallium doped tin oxide thinfilm for acetone sensor application

NASA Astrophysics Data System (ADS)

Preethi, M. S.; Bharath, S. P.; Bangera, Kasturi V.

2018-04-01

Undoped and gallium doped (1 at.%, 2 at.% and 3 at.%) tin oxide thin films were prepared using spray pyrolysis technique by optimising the deposition conditions such as precursor concentration, substrate temperature and spraying rate. X-ray diffraction analysis revealed formation of tetragonally structured polycrystalline films. The SEM micrographs of Ga doped films showed microstructures. The electrical resistivity of the doped films was found to be more than that of the undoped films. The Ga-doped tin oxide thin films were characterised for gas sensors. 1 at.% Ga doped thin films were found to be better acetone gas sensor, showed 68% sensitivity at 350°C temperature.

Structural and chemical characterization of terbia thin films grown on hexagonally close packed metal substrates

NASA Astrophysics Data System (ADS)

Cartas, William

Rare earth oxides (REOs) exhibit favorable catalytic performance for a diverse set of chemical transformations, including both partial and complete oxidation reactions. I will discuss our efforts to develop thin film systems of terbia for model surface science investigations of a REO that is effectively reducible, and which is thus expected to promote complete oxidation chemistry of adsorbed species. The growth of terbia on Cu(111) is shown to produce a complex surface that exhibits multiple phases of the oxide as well as exposed substrate. Growing the film on Pt(111) results in more uniform, single phase, and closed film. We used low energy electron diffraction (LEED) and scanning tunneling microscopy (STM) to characterize the structural properties of terbia thin films grown on Pt(111) in ultrahigh vacuum (UHV) using physical vapor deposition. We find that the REO grows as a high quality Tb2O 3(111) film, and adopts oxygen-deficient fluorite structures wherein the metal cations form a hexagonal lattice in registry with the Pt(111) substrate, while oxygen vacancies are randomly distributed within the film. The Tb 2O3(111) films are thermally stable when heated to 1000 K in UHV. LEED and STM show that a fraction of the Tb2O3 forms hexagonal islands when first deposited, and further depositions typically result in three dimensional growth of the film. The Tb2O3 (111) / Pt(111) system produces a coincidence structure, seen very clearly in LEED images. We have also found that Tb2O3(111) films can be oxidized in UHV by exposure to plasma-generated atomic oxygen beams. The oxidized films have an estimated TbO2 stoichiometry and decompose to Tb2O3 during heating, with O2 desorption starting at about 500 K. Terbia films oxidized at 90 K show a weakly bound state of oxygen that is likely chemisorbed. Temperature programmed reaction spectroscopy (TPRS) studies using methanol show that increased oxygen in the film does not modify the chemical selectivity of the film; however, the increased oxygen content does increase the activity of the film toward methanol dehydrogenation. We have found that when methanol is adsorbed onto the terbia-Pt(111) system, it reacts to form formaldehyde and water and reduces the surface. The development of high-quality terbia thin films on Pt(111) provides new opportunities to investigate oxidation chemistry on an REO that has distinct reduction and oxidation properties.

Oxide-based method of making compound semiconductor films and making related electronic devices

DOEpatents

Kapur, Vijay K.; Basol, Bulent M.; Leidholm, Craig R.; Roe, Robert A.

2000-01-01

A method for forming a compound film includes the steps of preparing a source material, depositing the source material on a base and forming a preparatory film from the source material, heating the preparatory film in a suitable atmosphere to form a precursor film, and providing suitable material to said precursor film to form the compound film. The source material includes oxide-containing particles including Group IB and IIIA elements. The precursor film includes non-oxide Group IB and IIIA elements. The compound film includes a Group IB-IIIA-VIA compound. The oxides may constitute greater than about 95 molar percent of the Group IB elements and greater than about 95 molar percent of the Group IIIA elements in the source material. Similarly, non-oxides may constitute greater than about 95 molar percent of the Group IB elements and greater than about 95 molar percent of the Group IIIA elements in the precursor film. The molar ratio of Group IB to Group IIIA elements in the source material may be greater than about 0.6 and less than about 1.0, or substantially greater that 1.0, in which case this ratio in the compound film may be reduced to greater than about 0.6 and less than about 1.0. The source material may be prepared as an ink from particles in powder form. The oxide-containing particles may include a dopant, as may the compound film. Compound films including a Group IIB-IVA-VA compound may be substituted using appropriate substitutions in the method. The method, also, is applicable to fabrication of solar cells and other electronic devices.

Combinatorial screening of halide perovskite thin films and solar cells by mask-defined IR laser molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Kawashima, Kazuhiro; Okamoto, Yuji; Annayev, Orazmuhammet; Toyokura, Nobuo; Takahashi, Ryota; Lippmaa, Mikk; Itaka, Kenji; Suzuki, Yoshikazu; Matsuki, Nobuyuki; Koinuma, Hideomi

2017-12-01

As an extension of combinatorial molecular layer epitaxy via ablation of perovskite oxides by a pulsed excimer laser, we have developed a laser molecular beam epitaxy (MBE) system for parallel integration of nano-scaled thin films of organic-inorganic hybrid materials. A pulsed infrared (IR) semiconductor laser was adopted for thermal evaporation of organic halide (A-site: CH3NH3I) and inorganic halide (B-site: PbI2) powder targets to deposit repeated A/B bilayer films where the thickness of each layer was controlled on molecular layer scale by programming the evaporation IR laser pulse number, length, or power. The layer thickness was monitored with an in situ quartz crystal microbalance and calibrated against ex situ stylus profilometer measurements. A computer-controlled movable mask system enabled the deposition of combinatorial thin film libraries, where each library contains a vertically homogeneous film with spatially programmable A- and B-layer thicknesses. On the composition gradient film, a hole transport Spiro-OMeTAD layer was spin-coated and dried followed by the vacuum evaporation of Ag electrodes to form the solar cell. The preliminary cell performance was evaluated by measuring I-V characteristics at seven different positions on the 12.5 mm × 12.5 mm combinatorial library sample with seven 2 mm × 4 mm slits under a solar simulator irradiation. The combinatorial solar cell library clearly demonstrated that the energy conversion efficiency sharply changes from nearly zero to 10.2% as a function of the illumination area in the library. The exploration of deposition parameters for obtaining optimum performance could thus be greatly accelerated. Since the thickness ratio of PbI2 and CH3NH3I can be freely chosen along the shadow mask movement, these experiments show the potential of this system for high-throughput screening of optimum chemical composition in the binary film library and application to halide perovskite solar cell.

Combinatorial screening of halide perovskite thin films and solar cells by mask-defined IR laser molecular beam epitaxy.

PubMed

Kawashima, Kazuhiro; Okamoto, Yuji; Annayev, Orazmuhammet; Toyokura, Nobuo; Takahashi, Ryota; Lippmaa, Mikk; Itaka, Kenji; Suzuki, Yoshikazu; Matsuki, Nobuyuki; Koinuma, Hideomi

2017-01-01

As an extension of combinatorial molecular layer epitaxy via ablation of perovskite oxides by a pulsed excimer laser, we have developed a laser molecular beam epitaxy (MBE) system for parallel integration of nano-scaled thin films of organic-inorganic hybrid materials. A pulsed infrared (IR) semiconductor laser was adopted for thermal evaporation of organic halide (A-site: CH 3 NH 3 I) and inorganic halide (B-site: PbI 2 ) powder targets to deposit repeated A/B bilayer films where the thickness of each layer was controlled on molecular layer scale by programming the evaporation IR laser pulse number, length, or power. The layer thickness was monitored with an in situ quartz crystal microbalance and calibrated against ex situ stylus profilometer measurements. A computer-controlled movable mask system enabled the deposition of combinatorial thin film libraries, where each library contains a vertically homogeneous film with spatially programmable A- and B-layer thicknesses. On the composition gradient film, a hole transport Spiro-OMeTAD layer was spin-coated and dried followed by the vacuum evaporation of Ag electrodes to form the solar cell. The preliminary cell performance was evaluated by measuring I - V characteristics at seven different positions on the 12.5 mm × 12.5 mm combinatorial library sample with seven 2 mm × 4 mm slits under a solar simulator irradiation. The combinatorial solar cell library clearly demonstrated that the energy conversion efficiency sharply changes from nearly zero to 10.2% as a function of the illumination area in the library. The exploration of deposition parameters for obtaining optimum performance could thus be greatly accelerated. Since the thickness ratio of PbI 2 and CH 3 NH 3 I can be freely chosen along the shadow mask movement, these experiments show the potential of this system for high-throughput screening of optimum chemical composition in the binary film library and application to halide perovskite solar cell.

Prediction Surface Morphology of Nanostructure Fabricated by Nano-Oxidation Technology.

PubMed

Huang, Jen-Ching; Chang, Ho; Kuo, Chin-Guo; Li, Jeen-Fong; You, Yong-Chin

2015-12-04

Atomic force microscopy (AFM) was used for visualization of a nano-oxidation technique performed on diamond-like carbon (DLC) thin film. Experiments of the nano-oxidation technique of the DLC thin film include those on nano-oxidation points and nano-oxidation lines. The feature sizes of the DLC thin film, including surface morphology, depth, and width, were explored after application of a nano-oxidation technique to the DLC thin film under different process parameters. A databank for process parameters and feature sizes of thin films was then established, and multiple regression analysis (MRA) and a back-propagation neural network (BPN) were used to carry out the algorithm. The algorithmic results are compared with the feature sizes acquired from experiments, thus obtaining a prediction model of the nano-oxidation technique of the DLC thin film. The comparative results show that the prediction accuracy of BPN is superior to that of MRA. When the BPN algorithm is used to predict nano-point machining, the mean absolute percentage errors (MAPE) of depth, left side, and right side are 8.02%, 9.68%, and 7.34%, respectively. When nano-line machining is being predicted, the MAPEs of depth, left side, and right side are 4.96%, 8.09%, and 6.77%, respectively. The obtained data can also be used to predict cross-sectional morphology in the DLC thin film treated with a nano-oxidation process.

Nickel oxide nanoparticles film produced by dead biomass of filamentous fungus

PubMed Central

Salvadori, Marcia Regina; Nascimento, Cláudio Augusto Oller; Corrêa, Benedito

2014-01-01

The synthesis of nickel oxide nanoparticles in film form using dead biomass of the filamentous fungus Aspergillus aculeatus as reducing agent represents an environmentally friendly nanotechnological innovation. The optimal conditions and the capacity of dead biomass to uptake and produce nanoparticles were evaluated by analyzing the biosorption of nickel by the fungus. The structural characteristics of the film-forming nickel oxide nanoparticles were analyzed by scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDS), X-ray photoelectron spectroscopy (XPS), transmission electron microscopy (TEM), and atomic force microscopy (AFM). These techniques showed that the nickel oxide nanoparticles had a size of about 5.89 nm and were involved in a protein matrix which probably permitted their organization in film form. The production and uptake of nickel oxide nanoparticles organized in film form by dead fungal biomass bring us closer to sustainable strategies for the biosynthesis of metal oxide nanoparticles. PMID:25228324

Effects of iron content in Ni-Cr-xFe alloys and immersion time on the oxide films formed in a simulated PWR water environment

NASA Astrophysics Data System (ADS)

Ru, Xiangkun; Lu, Zhanpeng; Chen, Junjie; Han, Guangdong; Zhang, Jinlong; Hu, Pengfei; Liang, Xue

2017-12-01

The iron content in Ni-Cr-xFe (x = 0-9 at.%) alloys strongly affected the properties of oxide films after 978 h of immersion in the simulated PWR primary water environment at 310 °C. Increasing the iron content in the alloys increased the amount of iron-bearing polyhedral spinel oxide particles in the outer oxide layer and increased the local oxidation penetrations into the alloy matrix from the chromium-rich inner oxide layer. The effects of iron content in the alloys on the oxide film properties after 500 h of immersion were less significant than those after 978 h. Iron content increased, and chromium content decreased, in the outer oxide layer with increasing iron content in the alloys. Increasing the immersion time facilitated the formation of the local oxidation penetrations along the matrix/film interface and the nickel-bearing spinel oxides in the outer oxide layer.

Stabilized chromium oxide film

DOEpatents

Nyaiesh, A.R.; Garwin, E.L.

1986-08-04

Stabilized air-oxidized chromium films deposited on high-power klystron ceramic windows and sleeves having a thickness between 20 and 150A are useful in lowering secondary electron emission yield and in avoiding multipactoring and window failure due to overheating. The ceramic substrate for the film is chosen from alumina, sapphire or beryllium oxide.

Metal oxide films on metal

DOEpatents

Wu, Xin D.; Tiwari, Prabhat

1995-01-01

A structure including a thin film of a conductive alkaline earth metal oxide selected from the group consisting of strontium ruthenium trioxide, calcium ruthenium trioxide, barium ruthenium trioxide, lanthanum-strontium cobalt oxide or mixed alkaline earth ruthenium trioxides thereof upon a thin film of a noble metal such as platinum is provided.

Stabilized chromium oxide film

DOEpatents

Garwin, Edward L.; Nyaiesh, Ali R.

1988-01-01

Stabilized air-oxidized chromium films deposited on high-power klystron ceramic windows and sleeves having a thickness between 20 and 150.ANG. are useful in lowering secondary electron emission yield and in avoiding multipactoring and window failure due to overheating. The ceramic substrate for the film is chosen from alumina, sapphire or beryllium oxide.

Effect of annealing temperature on the properties of copper oxide films prepared by dip coating technique

NASA Astrophysics Data System (ADS)

Raship, N. A.; Sahdan, M. Z.; Adriyanto, F.; Nurfazliana, M. F.; Bakri, A. S.

2017-01-01

Copper oxide films were grown on silicon substrates by sol-gel dip coating method. In order to study the effects of annealing temperature on the properties of copper oxide films, the temperature was varied from 200 °C to 450 °C. In the process of dip coating, the substrate is withdrawn from the precursor solution with uniform velocity to obtain a uniform coating before undergoing an annealing process to make the copper oxide film polycrystalline. The physical properties of the copper oxide films were measured by an X-ray diffraction (XRD), a field emission scanning electron microscope (FESEM), an atomic force microscopy (AFM) and a four point probe instrument. From the XRD results, we found that pure cuprite (Cu2O) phase can be obtained by annealing the films annealed at 200 °C. Films annealed at 300 °C had a combination phase which consists of tenorite (CuO) and cuprite (Cu2O) phase while pure tenorite (CuO) phase can be obtained at 450 °C annealing temperature. The surface microstructure showed that the grains size is increased whereas the surface roughness is increased and then decreases by increasing in annealing temperature. The films showed that the resistivity decreased with increasing annealing temperature. Consequently, it was observed that annealing temperature has strong effects on the structural, morphological and electrical properties of copper oxide films.

Composite films of oxidized multiwall carbon nanotube and poly(3,4-ethylenedioxythiophene): polystyrene sulfonate (PEDOT:PSS) as a contact electrode for transistor and inverter devices.

PubMed

Yun, Dong-Jin; Rhee, Shi-Woo

2012-02-01

Composite films of multiwall carbon nanotube (MWNT)/poly(3,4-ethylenedioxythiophene) polymerized with poly(4-styrenesulfonate) (PEDOT:PSS) were prepared by spin-coating a mixture solution. The effect of the MWNT loading and the MWNT oxidation, with acid solution or ultraviolet (UV)-ozone treatment, on the film properties such as surface roughness, work function, surface energy, optical transparency and conductivity were studied. Also pentacene thin film transistors and inverters were made with these composite films as a contact metal and the device characteristics were measured. The oxidation of MWNT reduced the conductivity of MWNT/PEDOT:PSS composite film but increased the work function and transparency. UV-ozone treated MWNT/PEDOT:PSS composite film showed higher conductivity (14000 Ω/□) and work function (4.9 eV) than acid-oxidized MWNT/PEDOT:PSS composite film and showed better performance as a source/drain electrode in organic thin film transistor (OTFT) than other types of MWNT/PEDOT:PSS composite films. Hole injection barrier of the UV-ozone treated MWNT/PEDOT:PSS composite film with pentacene was significantly lower than any other films because of the higher work function.

Measurements of the optical properties of thin films of silver and silver oxide

NASA Technical Reports Server (NTRS)

Peters, Palmer N.; Sisk, Robert C.; Brown, Yolanda; Gregory, John C.; Nag, Pallob K.; Christl, Ligia

1995-01-01

The optical properties of silver films and their oxides are measured to better characterize such films for use as sensors for atomic oxygen. Good agreement between properties of measured pure silver films and reported optical constants is observed. Similar comparisons for silver oxide have not been possible because of a lack of reported constants, but self-consistencies and discrepancies in our measured results are described.

Effects of surface poisons on the oxidation of binary alloys

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hagan, P.S.; Polizzotti, R.S.; Luckman, G.

1985-10-01

A system of reaction-diffusion equations describing the oxidation of binary alloys in environments containing small amounts of surface poisons is analyzed. These poisons reduce the oxygen flux into the alloy, which causes the alloy to oxidize in two stages.During the initial stage, the oxidation reaction occurs in a stationary boundary layer at the alloy surface. Consequently, a thin zone containing a very high concentration of the metal oxide is created at the alloy surface. During the second stage, the oxidation reaction occurs in a moving boundary layer. This leads to a Stefan problem, which is analyzed by using asymptotic andmore » numerical techniques. By comparing the solutions to those of alloys in unpoisoned environments, it is concluded that surface poisons can lead to the formation of protective external oxide scales in alloys which would not normally form such scales. 11 references.« less

Aerosol chemical vapor deposition of metal oxide films

DOEpatents

Ott, K.C.; Kodas, T.T.

1994-01-11

A process of preparing a film of a multicomponent metal oxide including: forming an aerosol from a solution comprised of a suitable solvent and at least two precursor compounds capable of volatilizing at temperatures lower than the decomposition temperature of said precursor compounds; passing said aerosol in combination with a suitable oxygen-containing carrier gas into a heated zone, said heated zone having a temperature sufficient to evaporate the solvent and volatilize said precursor compounds; and passing said volatilized precursor compounds against the surface of a substrate, said substrate having a sufficient temperature to decompose said volatilized precursor compounds whereby metal atoms contained within said volatilized precursor compounds are deposited as a metal oxide film upon the substrate is disclosed. In addition, a coated article comprising a multicomponent metal oxide film conforming to the surface of a substrate selected from the group consisting of silicon, magnesium oxide, yttrium-stabilized zirconium oxide, sapphire, or lanthanum gallate, said multicomponent metal oxide film characterized as having a substantially uniform thickness upon said substrate.

A photoelectrochemical (PEC) study on graphene oxide based hematite thin films heterojunction (R-GO/Fe2O3)

NASA Astrophysics Data System (ADS)

Sharma, Poonam; Zachariah, Michael; Ehrman, Sheryl; Shrivastava, Rohit; Dass, Sahab; Satsangi, Vibha; Michael Zachariah, Sheryl Ehrman Collaboration; Rohit Shrivastava, Sahab Dass Collaboration; Vibha R Satsangi, Poonam Sharma Team

2013-03-01

Graphene has an excellent electronic conductivity, a high theoretical surface area of 2630 m2/g and excellent mechanical properties and, thus, is a promising component for high-performance electrode materials. Following this, GO has been used to modify the PEC response of photoactive material hematite thin films in PEC cell. A reduced graphene oxide/iron oxide (R-GO/Fe2O3) thin film structure has been successfully prepared on ITO by directly growing iron oxide particles on the thermally reduced graphene oxide sheets prepared from suspension of exfoliated graphene oxide. R-GO/Fe2O3 thin films were tested in PEC cell and offered ten times higher photocurrent density than pristine Fe2O3 thin film sample. XRD, SEM, EDS, UV-Vis, Mott-Schottky and Raman studies were carried out to study spectro-electrochemical properties. Enhanced PEC performance of these photoelectrodes was attributed to its porous morphology, improved conductivity upon favorable carrier transfer across the oxides interface.

High density nonmagnetic cobalt in thin films

NASA Astrophysics Data System (ADS)

Banu, Nasrin; Singh, Surendra; Basu, Saibal; Roy, Anupam; Movva, Hema C. P.; Lauter, V.; Satpati, B.; Dev, B. N.

2018-05-01

Recently high density (HD) nonmagnetic cobalt has been discovered in a nanoscale cobalt thin film, grown on Si(111) single crystal. This form of cobalt is not only nonmagnetic but also superconducting. These promising results have encouraged further investigations of the growth of the nonmagnetic (NM) phase of cobalt. In the original investigation, the cobalt film had a natural cobalt oxide at the top. We have investigated whether the growth of HD NM cobalt layers in the thin film depends on (i) a capping layer on the cobalt film, (ii) the thickness of the cobalt film and (iii) the nature of the substrate on which the cobalt film is grown. The results of such investigations indicate that for cobalt films capped with a thin gold layer, and for various film thicknesses, HD NM cobalt layers are formed. However, instead of a Si substrate, when the cobalt films are grown on oxide substrates, such as silicon oxide or cobalt oxide, HD NM cobalt layers are not formed. The difference is attributed to the nature—crystalline or amorphous—of the substrate.

Thin film hydrous metal oxide catalysts

DOEpatents

Dosch, Robert G.; Stephens, Howard P.

1995-01-01

Thin film (<100 nm) hydrous metal oxide catalysts are prepared by 1) synthesis of a hydrous metal oxide, 2) deposition of the hydrous metal oxide upon an inert support surface, 3) ion exchange with catalytically active metals, and 4) activating the hydrous metal oxide catalysts.

High carrier concentration p-type transparent conducting oxide films

DOEpatents

Yan, Yanfa; Zhang, Shengbai

2005-06-21

A p-type transparent conducting oxide film is provided which is consisting essentially of, the transparent conducting oxide and a molecular doping source, the oxide and doping source grown under conditions sufficient to deliver the doping source intact onto the oxide.

Toxicity of binary mixtures of metal oxide nanoparticles to Nitrosomonas europaea.

PubMed

Yu, Ran; Wu, Junkang; Liu, Meiting; Zhu, Guangcan; Chen, Lianghui; Chang, Yan; Lu, Huijie

2016-06-01

Although the widely used metal oxide nanoparticles (NPs) titanium dioxide NPs (n-TiO2), cerium dioxide NPs (n-CeO2), and zinc oxide NPs (n-ZnO) have been well known for their potential cytotoxicities to environmental organisms, their combined effects have seldom been investigated. In this study, the short-term binary effect of n-CeO2 and n-TiO2 or n-ZnO on a model ammonia oxidizing bacterium, Nitrosomonas europaea were evaluated based on the examinations of cells' physiological, metabolic, and transcriptional responses. The addition of n-TiO2 mitigated the negative effect of more toxic n-CeO2 and the binary toxicity (antagonistic toxicity) of n-TiO2 and n-CeO2 was generally lower than the single NPs induced one. While the n-CeO2/n-ZnO mixture exerted higher cytotoxicity (synergistic cytotoxicity) than that from single NPs. The increased addition of the less toxic n-CeO2 exaggerated the binary toxicity of n-CeO2/n-ZnO mixture although the solubility of n-ZnO was not significantly affected, which excluded the contribution of the dissolved Zn ions to the enhancement of the combined cytotoxicity. The cell membrane disturbances and NP internalizations were detected for all the NP impacted cultures and the electrostatic interactions among the two distinct NPs and the cells were expected to play a key role in mediating their direct contacts and the eventual binary nanotoxicity to the cells. Copyright © 2016 Elsevier Ltd. All rights reserved.

Amorphous and Crystalline Vanadium Oxides as High-Energy and High-Power Cathodes for Three-Dimensional Thin-Film Lithium Ion Batteries.

PubMed

Mattelaer, Felix; Geryl, Kobe; Rampelberg, Geert; Dendooven, Jolien; Detavernier, Christophe

2017-04-19

Flexible wearable electronics and on-chip energy storage for wireless sensors drive rechargeable batteries toward thin-film lithium ion batteries. To enable more charge storage on a given surface, higher energy density materials are required, while faster energy storage and release can be obtained by going to thinner films. Vanadium oxides have been examined as cathodes in classical and thin-film lithium ion batteries for decades, but amorphous vanadium oxide thin films have been mostly discarded. Here, we investigate the use of atomic layer deposition, which enables electrode deposition on complex three-dimensional (3D) battery architectures, to obtain both amorphous and crystalline VO 2 and V 2 O 5 , and we evaluate their thin-film cathode performance. Very high volumetric capacities are found, alongside excellent kinetics and good cycling stability. Better kinetics and higher volumetric capacities were observed for the amorphous vanadium oxides compared to their crystalline counterparts. The conformal deposition of these vanadium oxides on silicon micropillar structures is demonstrated. This study shows the promising potential of these atomic layer deposited vanadium oxides as cathodes for 3D all-solid-state thin-film lithium ion batteries.

Microstructure of thermally grown and deposited alumina films probed with positrons

NASA Astrophysics Data System (ADS)

Somieski, Bertram; Hulett, Lester D.; Xu, Jun; Pint, Bruce A.; Tortorelli, Peter F.; Nielsen, Bent; Asoka-Kumar, Palakkal; Suzuki, Ryoichi; Ohdaira, Toshiyuki

1999-03-01

Aluminum oxide films used for corrosion protection of iron and nickel aluminides were generated by substrate oxidation as well as plasma and physical vapor depositions. The films grown by oxidation were crystalline. The others were amorphous. Defect structures of the films were studied by positron spectroscopy techniques. Lifetimes of the positrons, and Doppler broadening of the γ photons generated by their annihilation, were measured as functions of the energies with which they were injected. In this manner, densities and sizes of the defects were determined as functions of depths from the outer surfaces of the films. Alumina films generated by oxidation had high densities of open volume defects, mainly consisting of a few aggregated vacancies. In the outer regions of the films the structures of the defects did not depend on substrate compositions. Positron lifetime measurements, and the S and W parameters extracted from Doppler broadening spectra, showed uniform distributions of defects in the crystalline Al2O3 films grown on nickel aluminide substrates, but these data indicated intermediate layers of higher defect contents at the film/substrate interfaces of oxides grown on iron aluminide substrates. Amorphous films generated by plasma and physical vapor deposition had much larger open volume defects, which caused the average lifetimes of the injected positrons to be significantly longer. The plasma deposited film exhibited a high density of large cavities.

Influence of hydroxyapatite on the corrosion resistance of the Ti-13Nb-13Zr alloy.

PubMed

Duarte, Laís T; Biaggio, Sonia R; Rocha-Filho, Romeu C; Bocchi, Nerilso

2009-05-01

Electrochemical analyses on the biocompatible alloy Ti-13Nb-13Zr wt% in an electrolyte simulating physiological medium (PBS solution) are reported. Hydroxyapatite (HA) films were obtained on the alloy by electrodeposition at constant cathodic current. Samples of the alloy covered with an anodic-oxide film or an anodic-oxide/HA film were analyzed by open circuit potential and electrochemical impedance spectroscopy measurements during 180 days in the PBS electrolyte. Analyses of the open-circuit potential (E (oc)) values indicated that the oxide/HA film presents better protection characteristics than the oxide only. This behavior was corroborated by the higher film resistances obtained from impedance data, indicating that, besides improving the alloy osteointegration, the hydroxyapatite film may also increase the corrosion protection of the biomaterial.

Evaluation of the optical characteristics of c-axis oriented zinc oxide thin films grown by sol gel spin coating technique

NASA Astrophysics Data System (ADS)

Baisakh, K.; Behera, S.; Pati, S.

2018-03-01

In this work we have systematically studied the optical characteristics of synthesized wurzite zinc oxide thin films exhibiting (002) orientation. Using sol gel spin coating technique zinc oxide thin films are grown on pre cleaned fused quartz substrates. Structural properties of the films are studied using X-ray diffraction analysis. Micro structural analysis and thickness of the grown samples are analyzed using field emission scanning electron microscopy. With an aim to investigate the optical characteristics of the grown zinc oxide thin films the transmission and reflection spectra are evaluated in the ultraviolet-visible (UV-VIS) range. Using envelope method, the refractive index, extinction coefficient, absorption coefficient, band gap energy and the thickness of the synthesized films are estimated from the recorded UV-VIS spectra. An attempt has also been made to study the influence of crystallographic orientation on the optical characteristics of the grown films.

Atomic Resolution Imaging of Nanoscale Chemical Expansion in PrxCe1-xO2-δ during In Situ Heating.

PubMed

Swallow, Jessica G; Lee, Ja Kyung; Defferriere, Thomas; Hughes, Gareth M; Raja, Shilpa N; Tuller, Harry L; Warner, Jamie H; Van Vliet, Krystyn J

2018-02-27

Thin film nonstoichiometric oxides enable many high-temperature applications including solid oxide fuel cells, actuators, and catalysis. Large concentrations of point defects (particularly, oxygen vacancies) enable fast ionic conductivity or gas exchange kinetics in these materials but also manifest as coupling between lattice volume and chemical composition. This chemical expansion may be either detrimental or useful, especially in thin film devices that may exhibit enhanced performance through strain engineering or decreased operating temperatures. However, thin film nonstoichiometric oxides can differ from bulk counterparts in terms of operando defect concentrations, transport properties, and mechanical properties. Here, we present an in situ investigation of atomic-scale chemical expansion in Pr x Ce 1-x O 2-δ (PCO), a mixed ionic-electronic conducting oxide relevant to electrochemical energy conversion and high-temperature actuation. Through a combination of electron energy loss spectroscopy and transmission electron microscopy with in situ heating, we characterized chemical strains and changes in oxidation state in cross sections of PCO films grown on yttria-stabilized zirconia (YSZ) at temperatures reaching 650 °C. We quantified, both statically and dynamically, the nanoscale chemical expansion induced by changes in PCO redox state as a function of position and direction relative to the film-substrate interface. Additionally, we observed dislocations at the film-substrate interface, as well as reduced cation localization to threading defects within PCO films. These results illustrate several key aspects of atomic-scale structure and mechanical deformation in nonstoichiometric oxide films that clarify distinctions between films and bulk counterparts and that hold several implications for operando chemical expansion or "breathing" of such oxide films.

Local Anodic Oxidation of Thin GeO Films and Formation of Nanostructures Based on Them

NASA Astrophysics Data System (ADS)

Astankova, K. N.; Kozhukhov, A. S.; Azarov, I. A.; Gorokhov, E. B.; Sheglov, D. V.; Latyshev, A. V.

2018-04-01

The process of local anodic oxidation of thin GeO films has been studied using an atomic force microscope. The electron-probe microanalysis showed that oxidized areas of a GeO film were germanium dioxide. The effect of the voltage pulse duration applied to the probe-substrate system and the atmospheric humidity on the height of the oxide structures has been studied. The kinetics of the local anodic oxidation (LAO) in a semi-contact mode obeys the Cabrera-Mott model for large times. The initial growth rate of the oxide ( R 0) significantly increases and the time of starting the oxidation ( t 0) decreases as the atmospheric humidity increases by 20%, which is related to an increase in the concentration of oxygen-containing ions at the surface of the oxidized GeO film. It was shown that nanostructures in thin GeO layers can be formed by the LAO method.

Preparation and characterization of α-Al2O3 film by low temperature thermal oxidation of Al8Cr5 coating

NASA Astrophysics Data System (ADS)

Zhang, Min; Xu, Bajin; Ling, Guoping

2015-03-01

In this paper, α-Al2O3 film was prepared by low temperature thermal oxidation of Al8Cr5 coating. The Al8Cr5 alloy coating was prepared on SUS430 stainless steel through a two-step approach including electrodepositing Cr/Al composite coating and subsequent heat treatment at 740 °C for 16 h. After mechanical polishing removal of voids on the surface, the Al8Cr5 coating was thermal oxidized at 720 °C in argon for 100 h. The samples were characterized by SEM, EDX, XRD, XPS and TEM. XPS detection on the surface of oxidized Al8Cr5 coating showed that the oxide film mainly consisted of Al2O3. TEM characterization of the oxide film showed that it was α-Al2O3 films ca. 110 nm. The formation of α-Al2O3 films at low temperature can be attributed to the formation of Cr2O3 nuclei at the initial stage of oxidation which lowers the nucleation energy barrier of α-Al2O3.

Combinatorial techniques to efficiently investigate and optimize organic thin film processing and properties.

PubMed

Wieberger, Florian; Kolb, Tristan; Neuber, Christian; Ober, Christopher K; Schmidt, Hans-Werner

2013-04-08

In this article we present several developed and improved combinatorial techniques to optimize processing conditions and material properties of organic thin films. The combinatorial approach allows investigations of multi-variable dependencies and is the perfect tool to investigate organic thin films regarding their high performance purposes. In this context we develop and establish the reliable preparation of gradients of material composition, temperature, exposure, and immersion time. Furthermore we demonstrate the smart application of combinations of composition and processing gradients to create combinatorial libraries. First a binary combinatorial library is created by applying two gradients perpendicular to each other. A third gradient is carried out in very small areas and arranged matrix-like over the entire binary combinatorial library resulting in a ternary combinatorial library. Ternary combinatorial libraries allow identifying precise trends for the optimization of multi-variable dependent processes which is demonstrated on the lithographic patterning process. Here we verify conclusively the strong interaction and thus the interdependency of variables in the preparation and properties of complex organic thin film systems. The established gradient preparation techniques are not limited to lithographic patterning. It is possible to utilize and transfer the reported combinatorial techniques to other multi-variable dependent processes and to investigate and optimize thin film layers and devices for optical, electro-optical, and electronic applications.

Practical performance and its efficiency of arsenic removal from groundwater using Fe-Mn binary oxide.

PubMed

Chang, Fangfang; Qu, Jiuhui; Liu, Ruiping; Zhao, Xu; Lei, Pengju

2010-01-01

A treatment unit packed by granular adsorbent of Fe-Mn binary oxide incorporated into diatomite (FMBO(1:1)-diatomite) was studied to remove arsenic from anaerobic groundwater without any pre-treatment or post-treatment. The raw anaerobic groundwater containing 35-45 microg/L of arsenic was collected from suburb of Beijing. Arsenic (III) constituted roughly 60%-80% of the total arsenic content. Approximately 7,000 bed volumes (ratio of effluent volume to adsorbent volume) treated water with arsenic concentration below 10 microg/L were produced in the operation period of four months. The regeneration of FMBO (1:1)-diatomite had been operated for 15 times. In the first stage, the regeneration process significantly improved the adsorption capacity of FMBO (1:1)-diatomite. With increased loading amount of Fe-Mn binary oxide, the adsorption capacity for arsenic decreased 20%-40%. Iron and manganese in anaerobic groundwater were oxidized and adsorptive filtrated by FMBO (1:1)-diatomite efficiently. The final concentrations of iron and manganese in effluents were nearly zero. The continued safe performance of the treatment units proved that adsorbent FMBO (1:1)-diatomite had high oxidation ability and exhibited strong adsorptive filtration.

Cohesive energy and structural parameters of binary oxides of groups IIA and IIIB from diffusion quantum Monte Carlo

DOE PAGES

Santana, Juan A.; Krogel, Jaron T.; Kent, Paul R. C.; ...

2016-05-03

We have applied the diffusion quantum Monte Carlo (DMC) method to calculate the cohesive energy and the structural parameters of the binary oxides CaO, SrO, BaO, Sc 2O 3, Y 2O 3 and La 2O 3. The aim of our calculations is to systematically quantify the accuracy of the DMC method to study this type of metal oxides. The DMC results were compared with local and semi-local Density Functional Theory (DFT) approximations as well as with experimental measurements. The DMC method yields cohesive energies for these oxides with a mean absolute deviation from experimental measurements of 0.18(2) eV, while withmore » local and semi-local DFT approximations the deviation is 3.06 and 0.94 eV, respectively. For lattice constants, the mean absolute deviation in DMC, local and semi-local DFT approximations, are 0.017(1), 0.07 and 0.05 , respectively. In conclusion, DMC is highly accurate method, outperforming the local and semi-local DFT approximations in describing the cohesive energies and structural parameters of these binary oxides.« less

The effect of heat treatment on the resistivity of polycrystalline silicon films

NASA Technical Reports Server (NTRS)

Fripp, A. L., Jr.

1975-01-01

The resistivity of doped polycrystalline silicon films has been studied as a function of post deposition heat treatments in an oxidizing atmosphere. It was found that a short oxidation cycle may produce a resistivity increase as large as three orders of magnitude in the polycrystalline films. The extent of change was dependent on the initial resistivity and the films' doping level and was independent of the total oxidation time.

Polymer-assisted aqueous deposition of metal oxide films

DOEpatents

Li, DeQuan [Los Alamos, NM; Jia, Quanxi [Los Alamos, NM

2003-07-08

An organic solvent-free process for deposition of metal oxide thin films is presented. The process includes aqueous solutions of necessary metal precursors and an aqueous solution of a water-soluble polymer. After a coating operation, the resultant coating is fired at high temperatures to yield optical quality metal oxide thin films.

Memristive Properties of Thin Film Cuprous Oxide

DTIC Science & Technology

2011-03-01

Equation Chapter 1 Section 1 MEMRISTIVE PROPERTIES OF THIN FILM CUPROUS OXIDE THESIS Brett C...Force Base, Ohio APPROVED FOR PUBLIC RELEASE; DISTRIBUTION UNLIMITED The views expressed in this thesis are those of the...MEMRISTIVE PROPERTIES OF THIN FILM CUPROUS OXIDE THESIS Presented to the Faculty Department of Engineering Physics Graduate School of

OP-AMPS on Flexible Substrates with Printable Materials

DTIC Science & Technology

2011-08-10

Zinc Tin Oxide Thin - Film - Transistor Enhancement...II196, 2010. [3] D. Geng, D. H. Kang, and J. Jang, "High-Performance Amorphous Indium-Gallium- Zinc - Oxide Thin - Film Transistor With a Self-Aligned...B., Dodabalapur, A., “Band transport and mobility edge in amorphous solution-processed zinc tin oxide thin - film transistors ”, Applied

Zn1-xAlxO:Cu2O transparent metal oxide composite thin films by sol gel method

NASA Astrophysics Data System (ADS)

AlHammad, M. S.

2017-05-01

We have synthesized undoped zinc oxide (ZnO) and Cu2O doped Zn1-XAlXO (AZO; Al/Zn = 1.5 at.%) metal oxide films by sol-gel spin coating method. Atomic force microscopy results indicate that the Zn1-xAlxO:Cu2O is are formed form the fibers. The surface morphology of the films is found to depend on the concentration of Cu2O. The optical constants such as band gap, Urbach energy, refractive index, extinction coefficient and dielectric constants of the films were determined. The transmittance spectra shows that all the films are highly transparent. The study revealed that undoped ZnO film has direct bang gap of 3.29 eV and the optical band gap of films is increased with doping content. The hot probe measurements indicate that Zn1-xAlxO:Cu2O transparent metal oxide composite thin films exhibited p-type electrical conductivity.

Coupling mechanism between wear and oxidation processes of 304 stainless steel in hydrogen peroxide environments.

PubMed

Dong, Conglin; Yuan, Chengqing; Bai, Xiuqin; Li, Jian; Qin, Honglin; Yan, Xinping

2017-05-24

Stainless steel is widely used in strongly oxidizing hydrogen peroxide (H 2 O 2 ) environments. It is crucial to study its wear behaviour and failure mode. The tribological properties and oxidation of 304 stainless steel were investigated using a MMW-1 tribo-tester with a three-electrode setup in H 2 O 2 solutions with different concentrations. Corrosion current densities (CCDs), coefficients of frictions (COFs), wear mass losses, wear surface topographies, and metal oxide films were analysed and compared. The results show that the wear process and oxidation process interacted significantly with each other. Increasing the concentration of H 2 O 2 or the oxidation time was useful to form a layer of integrated, homogeneous, compact and thick metal oxide film. The dense metal oxide films with higher mechanical strengths improved the wear process and also reduced the oxidation reaction. The wear process removed the metal oxide films to increase the oxidation reaction. Theoretical data is provided for the rational design and application of friction pairs in oxidation corrosion conditions.

Difference in charge transport properties of Ni-Nb thin films with native and artificial oxide

DOE Office of Scientific and Technical Information (OSTI.GOV)

Trifonov, A. S., E-mail: trifonov.artem@phys.msu.ru; Physics Faculty, Lomonosov Moscow State University, Moscow 119991; Lubenchenko, A. V.

2015-03-28

Here, we report on the properties of native and artificial oxide amorphous thin film on a surface of an amorphous Ni-Nb sample. Careful measurements of local current-voltage characteristics of the system Ni-Nb / NiNb oxide/Pt, were carried out in contact mode of an atomic force microscope. Native oxide showed n-type conductivity, while in the artificial one exhibited p-type one. The shape of current-voltage characteristic curves is unique in both cases and no analogical behavior is found in the literature. X-ray photoelectron spectroscopy (XPS) measurements were used to detect chemical composition of the oxide films and the oxidation state of themore » alloy components. Detailed analysis of the XPS data revealed that the structure of natural Ni-Nb oxide film consists of Ni-NbO{sub x} top layer and nickel enriched bottom layer which provides n-type conductivity. In contrast, in the artificial oxide film Nb is oxidized completely to Nb{sub 2}O{sub 5}, Ni atoms migrate into bulk Ni-Nb matrix. Electron depletion layer is formed at the Ni-Nb/Nb{sub 2}O{sub 5} interface providing p-type conductivity.« less

Oxidation of the Ru(0001) surface covered by weakly bound, ultrathin silicate films

DOE PAGES

Emmez, Emre; Anibal Boscoboinik, J.; Tenney, Samuel; ...

2015-06-30

Bilayer silicate films grown on metal substrates are weakly bound to the metal surfaces, which allows ambient gas molecules to intercalate the oxide/metal interface. In this work, we studied the interaction of oxygen with Ru(0001) supported ultrathin silicate and aluminosilicate films at elevated O 2 pressures (10 -5–10 mbar) and temperatures (450–923 K). The results show that the silicate films stay essentially intact under these conditions, and oxygen in the film does not exchange with oxygen in the ambient. O 2 molecules readily penetrate the film and dissociate on the underlying Ru surface underneath. Also, the silicate layer does howevermore » strongly passivate the Ru surface towards RuO 2(110) oxide formation that readily occurs on bare Ru(0001) under the same conditions. Lastly, the results indicate considerable spatial effects for oxidation reactions on metal surfaces in the confined space at the interface. Moreover, the aluminosilicate films completely suppress the Ru oxidation, providing some rationale for using crystalline aluminosilicates in anti-corrosion coatings.« less

Thermal oxidation of silicon in a residual oxygen atmosphere—the RESOX process—for self-limiting growth of thin silicon dioxide films

NASA Astrophysics Data System (ADS)

Wright, Jason T.; Carbaugh, Daniel J.; Haggerty, Morgan E.; Richard, Andrea L.; Ingram, David C.; Kaya, Savas; Jadwisienczak, Wojciech M.; Rahman, Faiz

2016-10-01

We describe in detail the growth procedures and properties of thermal silicon dioxide grown in a limited and dilute oxygen atmosphere. Thin thermal oxide films have become increasingly important in recent years due to the continuing down-scaling of ultra large scale integration metal oxide silicon field effect transistors. Such films are also of importance for organic transistors where back-gating is needed. The technique described here is novel and allows self-limited formation of high quality thin oxide films on silicon surfaces. This technique is easy to implement in both research laboratory and industrial settings. Growth conditions and their effects on film growth have been described. Properties of the resulting oxide films, relevant for microelectronic device applications, have also been investigated and reported here. Overall, our findings are that thin, high quality, dense silicon dioxide films of thicknesses up to 100 nm can be easily grown in a depleted oxygen environment at temperatures similar to that used for usual silicon dioxide thermal growth in flowing dry oxygen.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lim, K.; Schelhas, L. T.; Siah, S. C.

There have been a number of studies on the fabrication of Sn-doped gallium oxide (Ga 2O 3:Sn) films with both conductive and transparent properties using a variety of deposition methods. However, often, synthesis results in films that are not transparent. In this paper, we examine the mechanisms underlying these results in Ga 2O 3:Sn thin films prepared at various growth temperatures, Sn concentrations, and oxygen partial pressures. With X-ray absorption spectroscopy, transmission electron microscopy and energy dispersive spectroscopy, we find that when films are grown under the oxygen deficient conditions there are Ga sub-oxide and SnO x phases in themore » Ga 2O 3:Sn thin film. These Ga sub-oxide phases are only found in non-transparent films, and so we infer that the Ga sub-oxide is responsible for the non-transparency. Furthermore, these observations suggest that to obtain transparent Ga 2O 3:Sn, films deposition or subsequent annealing must be carefully controlled in both temperature and oxygen partial pressure to avoid the formation of Ga sub-oxide phases.« less

Intrinsic stress evolution during amorphous oxide film growth on Al surfaces

DOE Office of Scientific and Technical Information (OSTI.GOV)

Flötotto, D., E-mail: d.floetotto@is.mpg.de; Wang, Z. M.; Jeurgens, L. P. H.

2014-03-03

The intrinsic stress evolution during formation of ultrathin amorphous oxide films on Al(111) and Al(100) surfaces by thermal oxidation at room temperature was investigated in real-time by in-situ substrate curvature measurements and detailed atomic-scale microstructural analyses. During thickening of the oxide a considerable amount of growth stresses is generated in, remarkably even amorphous, ultrathin Al{sub 2}O{sub 3} films. The surface orientation-dependent stress evolutions during O adsorption on the bare Al surfaces and during subsequent oxide-film growth can be interpreted as a result of (i) adsorption-induced surface stress changes and (ii) competing processes of free volume generation and structural relaxation, respectively.

Effects of lead on oxidation behavior of Alloy 690TT within a high temperature aqueous environment

NASA Astrophysics Data System (ADS)

Hou, Qiang; Liu, Zhiyong; Li, Chengtao; Li, Xiaogang

2017-12-01

The chemical compositions, phases and structures of two oxide films on Alloy 690TT following exposure for 4400 h in pure water with and without lead at 320 °C were studied by surface analysis techniques. The analysis of a lead-doped oxide film prepared by a focused ion beam (FIB) demonstrated that both Cr-rich and Ni-rich oxides were alternatively distributed within the outer layer, whereas the inner layer was porous and poorly protected, causing severe corrosion of the alloy and a thicker film was formed. A duplex film model was proposed for the effects discussion of lead on the oxidation mechanism.

The Chemical Vapor Deposition of Thin Metal Oxide Films

NASA Astrophysics Data System (ADS)

Laurie, Angus Buchanan

1990-01-01

Chemical vapor deposition (CVD) is an important method of preparing thin films of materials. Copper (II) oxide is an important p-type semiconductor and a major component of high T_{rm c} superconducting oxides. By using a volatile copper (II) chelate precursor, copper (II) bishexafluoroacetylacetonate, it has been possible to prepare thin films of copper (II) oxide by low temperature normal pressure metalorganic chemical vapor deposition. In the metalorganic CVD (MOCVD) production of oxide thin films, oxygen gas saturated with water vapor has been used mainly to reduce residual carbon and fluorine content. This research has investigated the influence of water-saturated oxygen on the morphology of thin films of CuO produced by low temperature chemical vapor deposition onto quartz, magnesium oxide and cubic zirconia substrates. ZnO is a useful n-type semiconductor material and is commonly prepared by the MOCVD method using organometallic precursors such as dimethyl or diethylzinc. These compounds are difficult to handle under atmospheric conditions. In this research, thin polycrystalline films of zinc oxide were grown on a variety of substrates by normal pressure CVD using a zinc chelate complex with zinc(II) bishexafluoroacetylacetonate dihydrate (Zn(hfa)_2.2H _2O) as the zinc source. Zn(hfa) _2.2H_2O is not moisture - or air-sensitive and is thus more easily handled. By operating under reduced-pressure conditions (20-500 torr) it is possible to substantially reduce deposition times and improve film quality. This research has investigated the reduced-pressure CVD of thin films of CuO and ZnO. Sub-micron films of tin(IV) oxide (SnO _2) have been grown by normal pressure CVD on quartz substrates by using tetraphenyltin (TPT) as the source of tin. All CVD films were characterized by X-ray powder diffraction (XRPD), scanning electron microscopy (SEM) and electron probe microanalysis (EPMA).

Properties and characteristics of dual-modified rice starch based biodegradable films.

PubMed

Woggum, Thewika; Sirivongpaisal, Piyarat; Wittaya, Thawien

2014-06-01

In this study, the dual-modified rice starch was hydroxypropylated with 6-12% of propylene oxide followed by crosslinking with 2% sodium trimetaphosphate (STMP) and a mixture of 2% STMP and 5% sodium tripolyphosphate (STPP). Increasing the propylene oxide concentrations in the DMRS yielded an increase in the molar substitution (MS) and degree of substitution (DS). However, the gelatinization parameters, paste properties, gel strength and paste clarity showed an inverse trend. The biodegradable films from the DMRS showed an increase the tensile strength, elongation at break and film solubility, while the transparency value decreased when the concentration of propylene oxide increased. However the water vapor permeability of the films did not significantly change with an increase in the concentration of propylene oxide. In addition, it was found that DMRS films crosslinked with 2% STMP demonstrated higher tensile strength, transparency value and lower water vapor permeability than the DMRS films crosslinked with a mixture of 2% STMP and 5% STPP. The XRD analysis of the DMRS films showed a decrease in crystallinity when the propylene oxide concentrations increased and the crystallinity of DMRS films with 2% STMP were higher than the DMRS films with a mixture of 2% STMP and 5% STPP. Copyright © 2014 Elsevier B.V. All rights reserved.

Microstructure of epitaxial ferroelectric/metal oxide electrode thin film heterostructures on LaAlO{sub 3} and silicon

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ghonge, S.G.; Goo, E.; Ramesh, R.

1994-12-31

TEM and X-ray diffraction studies of PZT, PLZT, lead titanate and bismuth titanate ferroelectric thin films and YBa{sub 2}Cu{sub 3}O{sub 7{minus}x}(YBCO), Bi{sub 2}Sr{sub 2}CaCu{sub 2}O{sub 8}(BSCCO) and La{sub 0.5}Sr{sub 0.5}CoO{sub 3}(LSCO) electrically conductive oxide thin films, that are sequentially deposited by pulsed laser ablation, show that these films may be deposited epitaxially onto LaAlO{sub 3}(LAO) or Si substrates. The conductive oxides are promising candidates for use is electrodes in place of metal electrodes in integrated ferroelectric device applications. The oxide electrodes are more chemically compatible with the ferroelectric films. High resolution electron microscopy his been used to investigate the interfacemore » between the ferroelectric and metal oxide thin films and no reaction was detected. Epitaxial growth is possible due to the similar crystal structures and the small lattice mismatch. The lattice mismatch that is present causes the domains in the ferroelectric films to be preferentially oriented and in the case of lead titanate, the film is single domain. These films may also have potential applications in integrated optical devices.« less

Raman characterization of a new Te-rich binary compound: CdTe2.

PubMed

Rousset, Jean; Rzepka, Edouard; Lincot, Daniel

2009-04-02

Structural characterization by Raman spectroscopy of CdTe thin films electrodeposited in acidic conditions is considered in this work. This study focuses on the evolution of material properties as a function of the applied potential and the film thickness, demonstrating the possibility to obtain a new Te-rich compound with a II/VI ratio of 1/2 under specific bath conditions. Raman measurements carried out on etched samples first allow the elimination of the assumption of a mixture of phases CdTe + Te and tend to confirm the formation of the CdTe(2) binary compound. The signature of this phase on the Raman spectrum is the increase of the LO band intensity compared to that obtained for the CdTe. The influence of the laser power is also considered. While no effect is observed on CdTe films, the increase of the incident irradiation power leads to the decomposition of the CdTe(2) compound into two more stable phases namely CdTe and Te.

Effect of native oxide layers on copper thin-film tensile properties: A reactive molecular dynamics study

DOE Office of Scientific and Technical Information (OSTI.GOV)

Skarlinski, Michael D., E-mail: michael.skarlinski@rochester.edu; Quesnel, David J.; Department of Mechanical Engineering, University of Rochester, Rochester, New York 14627

2015-12-21

Metal-oxide layers are likely to be present on metallic nano-structures due to either environmental exposure during use, or high temperature processing techniques such as annealing. It is well known that nano-structured metals have vastly different mechanical properties from bulk metals; however, difficulties in modeling the transition between metallic and ionic bonding have prevented the computational investigation of the effects of oxide surface layers. Newly developed charge-optimized many body [Liang et al., Mater. Sci. Eng., R 74, 255 (2013)] potentials are used to perform fully reactive molecular dynamics simulations which elucidate the effects that metal-oxide layers have on the mechanical propertiesmore » of a copper thin-film. Simulated tensile tests are performed on thin-films while using different strain-rates, temperatures, and oxide thicknesses to evaluate changes in yield stress, modulus, and failure mechanisms. Findings indicate that copper-thin film mechanical properties are strongly affected by native oxide layers. The formed oxide layers have an amorphous structure with lower Cu-O bond-densities than bulk CuO, and a mixture of Cu{sub 2}O and CuO charge character. It is found that oxidation will cause modifications to the strain response of the elastic modulii, producing a stiffened modulii at low temperatures (<75 K) and low strain values (<5%), and a softened modulii at higher temperatures. While under strain, structural reorganization within the oxide layers facilitates brittle yielding through nucleation of defects across the oxide/metal interface. The oxide-free copper thin-film yielding mechanism is found to be a tensile-axis reorientation and grain creation. The oxide layers change the observed yielding mechanism, allowing for the inner copper thin-film to sustain an FCC-to-BCC transition during yielding. The mechanical properties are fit to a thermodynamic model based on classical nucleation theory. The fit implies that the oxidation of the films reduces the activation volume for yielding.« less

The application of the barrier-type anodic oxidation method to thickness testing of aluminum films

NASA Astrophysics Data System (ADS)

Chen, Jianwen; Yao, Manwen; Xiao, Ruihua; Yang, Pengfei; Hu, Baofu; Yao, Xi

2014-09-01

The thickness of the active metal oxide film formed from a barrier-type anodizing process is directly proportional to its formation voltage. The thickness of the consumed portion of the metal film is also corresponding to the formation voltage. This principle can be applied to the thickness test of the metal films. If the metal film is growing on a dielectric substrate, when the metal film is exhausted in an anodizing process, because of the high electrical resistance of the formed oxide film, a sudden increase of the recorded voltage during the anodizing process would occur. Then, the thickness of the metal film can be determined from this voltage. As an example, aluminum films are tested and discussed in this work. This method is quite simple and is easy to perform with high precision.

Effect of N2 flow during deposition on p-type ZnO film

NASA Astrophysics Data System (ADS)

Lin, Chiung-Wei; Liu, Bor-Chang

2017-01-01

In this study, the influence of a nitrogen source on p-type conductive ZnO films was studied. Rapid thermal oxidation was conducted to oxidize ZnN films and convert them to ZnO films. When an as-deposited ZnN film was prepared at a high nitrogen gas flow rate, the converted ZnO film possessed many acceptors and showed stable p-type conduction. This p-type conduction was attributed to the nitrogen gas flow providing many “No” states, which act as acceptors within the processed ZnO film. It was found that the as-deposited ZnN film prepared at a high nitrogen gas flow rate is oxidized slightly so that only a few nitrogen atoms were replaced by oxygen. The carrier concentration and mobility of the optimized oxidized ZnN film were 9.76 × 1017 cm-3 and 62.78 cm2 V-1 s-1, respectively. A good rectified current-voltage characteristic with a turn-on voltage of 3.65 V was achieved for the optimized ZnO:N/ZnO junction.

Photocatalytic activity of binary metal oxide nanocomposites of CeO2/CdO nanospheres: Investigation of optical and antimicrobial activity.

PubMed

Magdalane, C Maria; Kaviyarasu, K; Vijaya, J Judith; Siddhardha, Busi; Jeyaraj, B

2016-10-01

We report the synthesis of high quality CeO2-CdO binary metal oxide nanocomposites were synthesized by a simple chemical precipitation and hydrothermal method. Cerium nitrate and cadmium nitrate were used as precursors. Composition, structure and morphology of the nanocomposites were analyzed by X-ray diffraction (XRD) and high resolution transmission electron microscopy (HRTEM). XRD pattern proves that the final product has cubic phase and the particle size diameter of the nanocomposites are 27nm, XRD results also indicated that the crystalline properties of the nanocomposite were improved without affecting the parent lattice, FESEM analysis indicates that the product is composed of spherical particles in clusters. The morphological and optical properties of CeO2-CdO nanosamples were characterized by HRTEM and DRS spectroscopy. The IR results showed high purity of products and indicated that the nanocomposites are made up of CeO2 and CdO bonds. Absorption spectra exhibited an upward shift in characteristic peaks caused by the addition of transition metal oxide, suggesting that crystallinity of both the metal oxide is improved due to specific doping level. TGA plots further confirmed the purity and stability of nanomaterials prepared. Hence the nanocomposite has cubic crystal lattice and form a homogeneous solid structure. From the result, Cd(2+) ions are embedded in the cubic crystal lattice of ceria. The growth rate increases which are ascribed to the cationic doping with a lower valence cation. Ce-Cd binary metal oxide nanocomposites showed antibacterial activity, it showed the better growth inhibition towards p.aeruginosa. Exploit of photodegradation and photocatalytic activity of large scale synthesis of CeO2-CdO binary metal oxide nanocomposites was reported. Copyright © 2016 Elsevier B.V. All rights reserved.

Characterization of microstructure of A508III/309L/308L weld and oxide films formed in deaerated high-temperature water

NASA Astrophysics Data System (ADS)

Xiong, Qi; Li, Hongjuan; Lu, Zhanpeng; Chen, Junjie; Xiao, Qian; Ma, Jiarong; Ru, Xiangkun

2018-01-01

The microstructure of A508III/309L/308L weld clad and the properties of the oxide films formed in simulated pressurized water reactor primary water at 290 °C were characterized. The A508III heat-affected zone (HAZ) consisted primarily of a decarburization zone with ferrite near the fusion line and a following pearlite structure with fine grains. A high hardness region in the HAZ could be the result of C-enrichment. M23C6 and M7C3 precipitates were observed in element transition zone. 308L stainless steel (SS) containing ∼ 12% ferrites exhibited both ferritic-austenitic solidification mode (FA mode, δ→γ) and austenitic-ferritic solidification mode (AF mode, γ→δ), whereas 309L SS containing ∼ 9% ferrites exhibited only FA mode. The A508III surface oxide film was mainly Fe3O4 in deaerated high-temperature water. The coarse grain zone covered with few oxide particles was different from other types of film on the other region of HAZ and the bulk zone. More pitting appears on 309L SS after immersion in deaerated high-temperature water due to the dissolution of inclusions. SS surface oxide films consisted primarily of spinels. The oxide film on SS was divided into two layers. Ni was concentrated mainly at the oxide/substrate interface. The oxide film formed on 309L was thicker than that on the 308L. The ferrite in the stainless steel could improve the oxidation resistance.

Characteristics of high-k gate dielectric formed by the oxidation of sputtered Hf/Zr/Hf thin films on the Si substrate

NASA Astrophysics Data System (ADS)

Kim, H. D.; Roh, Y.; Lee, J. E.; Kang, H.-B.; Yang, C.-W.; Lee, N.-E.

2004-07-01

We have investigated the effects of high temperature annealing on the physical and electrical properties of multilayered high-k gate oxide [HfSixOy/HfO2/intermixed-layer(IL)/ZrO2/intermixed-layer(IL)/HfO2] in metal-oxide-semiconductor device. The multilayered high-k films were formed after oxidizing the Hf/Zr/Hf films deposited directly on the Si substrate. The subsequent N2 annealing at high temperature (>= 700 °C) not only results in the polycrystallization of the multilayered high-k films, but also causes the diffusion of Zr. The latter transforms the HfSixOy/HfO2/IL/ZrO2/IL/HfO2 film into the Zr-doped HfO2 film, and improves electrical properties in general. However, the thin SiOx interfacial layer starts to form if annealing temperature increases over 700 °C, deteriorating the equivalent oxide thickness. .

Deposition and characterization of vanadium oxide based thin films for MOS device applications

NASA Astrophysics Data System (ADS)

Rakshit, Abhishek; Biswas, Debaleen; Chakraborty, Supratic

2018-04-01

Vanadium Oxide films are deposited on Si (100) substrate by reactive RF-sputtering of a pure Vanadium metallic target in an Argon-Oxygen plasma environment. The ratio of partial pressures of Argon to Oxygen in the sputtering-chamber is varied by controlling their respective flow rates and the resultant oxide films are obtained. MOS Capacitor based devices are then fabricated using the deposited oxide films. High frequency Capacitance-Voltage (C-V) and gate current-gate voltage (I-V) measurements reveal a significant dependence of electrical characteristics of the deposited films on their sputtering deposition parameters mainly, the relative content of Argon/Oxygen in the plasma chamber. A noteworthy change in the electrical properties is observed for the films deposited under higher relative oxygen content in the plasma atmosphere. Our results show that reactive sputtering serves as an indispensable deposition-setup for fabricating vanadium oxide based MOS devices tailor-made for Non-Volatile Memory (NVM) applications.

Density change and viscous flow during structural relaxation of plasma-enhanced chemical-vapor-deposited silicon oxide films

NASA Astrophysics Data System (ADS)

Cao, Zhiqiang; Zhang, Xin

2004-10-01

The structural relaxation of plasma-enhanced chemical-vapor-deposited (PECVD) silane-based silicon oxide films during thermal cycling and annealing has been studied using wafer curvature measurements. These measurements, which determine stress in the amorphous silicon oxide films, are sensitive to both plastic deformation and density changes. A quantitative case study of such changes has been done based upon the experimental results. A microstructure-based mechanism elucidates seams as a source of density change and voids as a source of plastic deformation, accompanied by a viscous flow. This theory was then used to explain a series of experimental results that are related to thermal cycling as well as annealing of PECVD silicon oxide films including stress hysteresis generation and reduction and coefficient of thermal-expansion changes. In particular, the thickness effect was examined; PECVD silicon oxide films with a thickness varying from 1to40μm were studied, as certain demanding applications in microelectromechanical systems require such thick films serving as heat/electrical insulation layers.

Strategies towards controlling strain-induced mesoscopic phase separation in manganite thin films

NASA Astrophysics Data System (ADS)

Habermeier, H.-U.

2008-10-01

Complex oxides represent a class of materials with a plethora of fascinating intrinsic physical functionalities. The intriguing interplay of charge, spin and orbital ordering in these systems superimposed by lattice effects opens a scientifically rewarding playground for both fundamental as well as application oriented research. The existence of nanoscale electronic phase separation in correlated complex oxides is one of the areas in this field whose impact on the current understanding of their physics and potential applications is not yet clear. In this paper this issue is treated from the point of view of complex oxide thin film technology. Commenting on aspects of complex oxide thin film growth gives an insight into the complexity of a reliable thin film technology for these materials. Exploring fundamentals of interfacial strain generation and strain accommodation paves the way to intentionally manipulate thin film properties. Furthermore, examples are given for an extrinsic continuous tuning of intrinsic electronic inhomogeneities in perovskite-type complex oxide thin films.

The influence of the substrate on the adhesive strength of the micro-arc oxidation coating developed on TiNi shape memory alloy

NASA Astrophysics Data System (ADS)

Hsieh, Shy-Feng; Ou, Shih-Fu; Chou, Chia-Kai

2017-01-01

TiNi shape memory alloys (SMAs), used as long-term implant materials, have a disadvantage. Ni-ion release from the alloys may trigger allergies in the human body. Micro-arc oxidation has been utilized to modify the surface of the TiNi SMA for improving its corrosion resistance and biocompatibility. However, there are very few reports investigating the essential adhesive strength between the micro-arc oxidized film and TiNi SMA. Two primary goals were attained by this study. First, Ti50Ni48.5Mo1.5 SMA having a phase transformation temperature (Af) less than body temperature and good shape recovery were prepared. Next, the Ti50Ni50 and Ti50Ni48.5Mo1.5 SMA surfaces were modified by micro-arc oxidation in phosphoric acid by applying relatively low voltages to maintain the adhesive strength. The results indicated that the pore size, film thickness, and P content increased with applied voltage. The micro-arc oxidized film, comprising Ti oxides, Ni oxide, and phosphate compounds, exhibited a glassy amorphous structure. The outmost surface of the micro-arc oxidized film contained a large amount of P (>12 at%) but only a trace of Ni (<5 at%). The adhesive strengths of all the micro-arc oxidized films exceeded the requirements of ISO 13779. Furthermore, Mo addition into TiNi SMAs was found to be favorable for improving the adhesive strength of the micro-arc oxidized film.

Spectroscopic And Electrochemical Studies Of Electrochromic Hydrated Nickel Oxide Films

NASA Astrophysics Data System (ADS)

Yu, P. C.; Nazri, G.; Lampert, C. M.

1986-09-01

The electrochrcrnic properties of hydrated nickel oxide thin films electrochemically deposited by anodization onto doped tin oxide-coated glass have been studied by transmittance measurements, cyclic voltammetry, Fourier-transform infrared spectroscopy, and ion-backscattering spectrometry. The spectral transmittance is reported for films switched in both the bleached and colored states. The photopic transmittance (Tp) can be switched from T (bleached) = 0.77 to T (colored) = 0.21, and the solar transmittance (Ts) can be switched from Ts(bleached) = 0.73 to TS (colored) = 0.35. Also reported is the near-infrared transmittance (TNIR)which was found to switch fran T N,IR (bleached) = 0.72 to TNIR (colored) = 0.55. The bleached condition is noted to have very low solar absorption in both the visible and solar regions. Ion-backscattering spectrometry was performed on the hydrated nickel oxide film, yielding a camposition of Ni01.0 (dehydrated) and a film thickness of 125 A. Cyclic voltammetry showed that, for films in the bleached or colored state, the reversible reaction is Ni(0H), = NiOOH + H+ + e . Voltammnetry also showed that the switching of the film is controlled by the diffusion or protons, where OH plays a role in the reaction mechanism. Analysis of the hydrated nickel-oxide thin films by Fourier-transform infrared spectroscopy revealed that both the bleached and colored states contain lattice water and hydroxyl groups. The surface hydroxyl groups play an important role in the coloration and bleaching of the anodically deposited nickel oxide thin films.

Influence of precursor concentration on the structural, optical and electrical properties of indium oxide thin film prepared by a sol-gel method

NASA Astrophysics Data System (ADS)

Lau, L. N.; Ibrahim, N. B.; Baqiah, H.

2015-08-01

This research was carried out to study the effect of different precursor concentrations on the physical properties of indium oxide (In2O3) thin film. In2O3 is a promising n-type semiconductor material that has been used in optoelectronic applications because of its highly transparent properties. It is a transparent conducting oxide with a wide band gap (∼3.7 eV). The experiment was started by preparing different precursor concentrations of indium nitrate hydrate (In (NO3)·H2O) solution and followed by the spin coating technique prior to an annealing process at 500 °C. Indium oxide thin films were characterized using an X-ray diffractometer, an ultraviolet-visible spectroscopy, a field emission scanning electron microscope and a Hall Effect Measurement System in order to determine the influence caused by the different molarities of indium oxide. The result showed that the film thickness increased with the indium oxide molarity. Film thicknesses were in the range of 0.3-135.1 nm and optical transparency of films was over 94%. Lowest resistivity of 2.52 Ω cm with a mobility of 26.60 cm2 V-1 S-1 and carrier concentration of 4.27 × 1017 cm-3 was observed for the indium oxide thin film prepared at 0.30 M.

Experiments On Transparent Conductive Films For Spacecraft

NASA Technical Reports Server (NTRS)

Perez-Davis, Marla E.; Rutledge, Sharon K.; De Groh, Kim K.; Hung, Ching-Cheh; Malave-Sanabria, Tania; Hambourger, Paul; Roig, David

1995-01-01

Report describes experiments on thin, transparent, electrically conductive films made, variously, of indium tin oxide covered by magnesium fluoride (ITO/MgF2), aluminum-doped zinc oxide (AZO), or pure zinc oxide (ZnO). Films are candidates for application to such spacecraft components, including various optoelectronic devices and window surfaces that must be protected against buildup of static electric charge. On Earth, such films useful on heat mirrors, optoelectronic devices, gas sensors, and automotive and aircraft windows.

Structure and thermoelectric properties of Al-doped ZnO films prepared by thermal oxidization under high magnetic field

NASA Astrophysics Data System (ADS)

Liu, Shiying; Peng, Sunjuan; Ma, Jun; Li, Guojian; Qin, Xuesi; Li, Mengmeng; Wang, Qiang

2017-04-01

This paper studies the effects of high magnetic field (HMF) on the structure, optical and thermoelectric properties of the doped ZnO thin films. The results show that both Al dopant and application of HMF can affect the crystal structure, surface morphology, elemental distribution and so on. The particles of the thin films become small and regular by doping Al. The ZnO films oxidized from the Au/Zn bilayer have needle structure. The ZnO films oxidized from the Au/Zn-Al bilayer transform to spherical from hexagonal due to the application of HMF. The transmittance decreases with doping Al because of the opaque of Al element and decreases with the application of HMF due to the dense structure obtained under HMF. Electrical resistivity (ρ) of the ZnO films without Al decreases with increasing measurement temperature (T) and is about 1.5 × 10-3 Ω·m at 210 °C. However, the ρ of the Al-doped ZnO films is less than 10-5 Ω·m. The Seebeck coefficient (S) of the films oxidized from the Au/Zn-Al films reduces with increasing T. The S values oxidized under 0 T and 12 T conditions are 2.439 μV/K and -3.415 μV/K at 210 °C, respectively. Power factor reaches the maximum value (3.198 × 10-4 W/m·K2) at 210 °C for the film oxidized under 12 T condition. These results indicate that the Al dopant and the application of HMF can be used to control structure and thermoelectric properties of doped ZnO films.

Nanocolumnar Crystalline Vanadium Oxide-Molybdenum Oxide Antireflective Smart Thin Films with Superior Nanomechanical Properties.

PubMed

Dey, Arjun; Nayak, Manish Kumar; Esther, A Carmel Mary; Pradeepkumar, Maurya Sandeep; Porwal, Deeksha; Gupta, A K; Bera, Parthasarathi; Barshilia, Harish C; Mukhopadhyay, Anoop Kumar; Pandey, Ajoy Kumar; Khan, Kallol; Bhattacharya, Manjima; Kumar, D Raghavendra; Sridhara, N; Sharma, Anand Kumar

2016-11-17

Vanadium oxide-molybdenum oxide (VO-MO) thin (21-475 nm) films were grown on quartz and silicon substrates by pulsed RF magnetron sputtering technique by altering the RF power from 100 to 600 W. Crystalline VO-MO thin films showed the mixed phases of vanadium oxides e.g., V 2 O 5 , V 2 O 3 and VO 2 along with MoO 3 . Reversible or smart transition was found to occur just above the room temperature i.e., at ~45-50 °C. The VO-MO films deposited on quartz showed a gradual decrease in transmittance with increase in film thickness. But, the VO-MO films on silicon exhibited reflectance that was significantly lower than that of the substrate. Further, the effect of low temperature (i.e., 100 °C) vacuum (10 -5 mbar) annealing on optical properties e.g., solar absorptance, transmittance and reflectance as well as the optical constants e.g., optical band gap, refractive index and extinction coefficient were studied. Sheet resistance, oxidation state and nanomechanical properties e.g., nanohardness and elastic modulus of the VO-MO thin films were also investigated in as-deposited condition as well as after the vacuum annealing treatment. Finally, the combination of the nanoindentation technique and the finite element modeling (FEM) was employed to investigate yield stress and von Mises stress distribution of the VO-MO thin films.

Nanocolumnar Crystalline Vanadium Oxide-Molybdenum Oxide Antireflective Smart Thin Films with Superior Nanomechanical Properties

NASA Astrophysics Data System (ADS)

Dey, Arjun; Nayak, Manish Kumar; Esther, A. Carmel Mary; Pradeepkumar, Maurya Sandeep; Porwal, Deeksha; Gupta, A. K.; Bera, Parthasarathi; Barshilia, Harish C.; Mukhopadhyay, Anoop Kumar; Pandey, Ajoy Kumar; Khan, Kallol; Bhattacharya, Manjima; Kumar, D. Raghavendra; Sridhara, N.; Sharma, Anand Kumar

2016-11-01

Vanadium oxide-molybdenum oxide (VO-MO) thin (21-475 nm) films were grown on quartz and silicon substrates by pulsed RF magnetron sputtering technique by altering the RF power from 100 to 600 W. Crystalline VO-MO thin films showed the mixed phases of vanadium oxides e.g., V2O5, V2O3 and VO2 along with MoO3. Reversible or smart transition was found to occur just above the room temperature i.e., at ~45-50 °C. The VO-MO films deposited on quartz showed a gradual decrease in transmittance with increase in film thickness. But, the VO-MO films on silicon exhibited reflectance that was significantly lower than that of the substrate. Further, the effect of low temperature (i.e., 100 °C) vacuum (10-5 mbar) annealing on optical properties e.g., solar absorptance, transmittance and reflectance as well as the optical constants e.g., optical band gap, refractive index and extinction coefficient were studied. Sheet resistance, oxidation state and nanomechanical properties e.g., nanohardness and elastic modulus of the VO-MO thin films were also investigated in as-deposited condition as well as after the vacuum annealing treatment. Finally, the combination of the nanoindentation technique and the finite element modeling (FEM) was employed to investigate yield stress and von Mises stress distribution of the VO-MO thin films.

Development and Application of Binary Suspensions in the Ternary System Cr2O3-TiO2-Al2O3 for S-HVOF Spraying

NASA Astrophysics Data System (ADS)

Potthoff, Annegret; Kratzsch, Robert; Barbosa, Maria; Kulissa, Nick; Kunze, Oliver; Toma, Filofteia-Laura

2018-04-01

Compositions in the system Cr2O3-TiO2-Al2O3 are among the most used ceramic materials for thermally sprayed coating solutions. Cr2O3 coatings present good sliding wear resistance; Al2O3 coatings show excellent insulation behavior and TiO2 striking corrosion properties. In order to combine these properties, coatings containing more than one oxide are highly interesting. The conventional spraying process is limited to the availability of binary feedstock powders with defined compositions. The use of suspensions offers the opportunity for tailor-made chemical compositions: within the triangle of Cr2O3-TiO2-Al2O3, each mixture of oxides can be created. Criteria for the selection of raw materials as well as the relevant aspects for the development of binary suspensions in the Cr2O3-TiO2-Al2O3 system to be used as feedstock for thermal spraying are presented. This formulation of binary suspensions required the development of water-based single-oxide suspensions with suitable behavior; otherwise, the interaction between the particles while mixing could lead up to a formation of agglomerates, which affect both the stability of the spray process and the coating properties. For the validation of this formulation procedure, binary Cr2O3-TiO2 and Al2O3-TiO2 suspensions were developed and sprayed using the S-HVOF process. The binary coatings were characterized and discussed in terms of microstructure and microhardness.

Effect of annealing temperature on the PEC performance of electrodeposited copper oxides

NASA Astrophysics Data System (ADS)

Marathey, Priyanka; Pati, Ranjan; Mukhopadhyay, Indrajit; Ray, Abhijit

2018-05-01

In this work, we have deposited Cu2O film on fluorine doped tin oxide (FTO) substrate by electrodeposition. Pure CuO phase has been obtained by annealing the electrodeposited Cu2O film at optimized temperature (500°C) for two hours in air. Copper(I) oxide films showed good photo response with a current density of 0.54mA/cm2 at 0 V vs RHE. It is evident from UV-Visible spectroscopic analysis that the bandgap of Cu(I) and Cu(II) oxides differs from each other resulting in significant change in photo current for these two phases, observed in the PEC study. However CuO film showed better stability as compared to Cu2O film.

Codoping of zinc and tungsten for practical high-performance amorphous indium-based oxide thin film transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kizu, Takio, E-mail: KIZU.Takio@nims.go.jp, E-mail: TSUKAGOSHI.Kazuhito@nims.go.jp; Mitoma, Nobuhiko; Tsukagoshi, Kazuhito, E-mail: KIZU.Takio@nims.go.jp, E-mail: TSUKAGOSHI.Kazuhito@nims.go.jp

2015-09-28

Using practical high-density sputtering targets, we investigated the effect of Zn and W codoping on the thermal stability of the amorphous film and the electrical characteristics in thin film transistors. zinc oxide is a potentially conductive component while W oxide is an oxygen vacancy suppressor in oxide films. The oxygen vacancy from In-O and Zn-O was suppressed by the W additive because of the high oxygen bond dissociation energy. With controlled codoping of W and Zn, we demonstrated a high mobility with a maximum mobility of 40 cm{sup 2}/V s with good stability under a negative bias stress in InWZnO thinmore » film transistors.« less

Controlling lipid oxidation via a biomimetic iron chelating active packaging material.

PubMed

Tian, Fang; Decker, Eric A; Goddard, Julie M

2013-12-18

Previously, a siderophore-mimetic metal chelating active packaging film was developed by grafting poly(hydroxamic acid) (PHA) from the surface of polypropylene (PP) films. The objective of the current work was to demonstrate the potential applicability of this PP-g-PHA film to control iron-promoted lipid oxidation in food emulsions. The iron chelating activity of this film was investigated, and the surface chemistry and color intensity of films were also analyzed after iron chelation. In comparison to the iron chelating activity in the free Fe(3+) solution, the PP-g-PHA film retained approximately 50 and 30% of its activity in nitrilotriacetic acid (NTA)/Fe(3+) and citric acid/Fe(3+) solutions, respectively (pH 5.0), indicating a strong chelating strength for iron. The ability of PP-g-PHA films to control lipid oxidation was demonstrated in a model emulsion system (pH 3.0). PP-g-PHA films performed even better than ethylenediaminetetraacetic acid (EDTA) in preventing the formation of volatile oxidation products. The particle size and ζ potential results of emulsions indicated that PP-g-PHA films had no adverse effects on the stability of the emulsion system. Attenuated total reflectance Fourier transform infrared spectroscopy (ATR-FTIR) analysis suggested a non-migratory nature of the PP-g-PHA film surface. These results suggest that such biomimetic, non-migratory metal chelating active packaging films have commercial potential in protecting foods against iron-promoted lipid oxidation.

Analysis of Zinc Oxide Thin Films Synthesized by Sol-Gel via Spin Coating

NASA Astrophysics Data System (ADS)

Wolgamott, Jon Carl

Transparent conductive oxides are gaining an increasingly important role in optoelectronic devices such as solar cells. Doped zinc oxide is a candidate as a low cost and nontoxic alternative to tin doped indium oxide. Lab results have shown that both n-type and p-type zinc oxide can be created on a small scale. This can allow zinc oxide to be used as either an electrode as well as a buffer layer to increase efficiency and protect the active layer in solar cells. Sol-gel synthesis is emerging as a low temperature, low cost, and resource efficient alternative to producing transparent conducting oxides such as zinc oxide. For sol-gel derived zinc oxide thin films to reach their potential, research in this topic must continue to optimize the known processing parameters and expand to new parameters to tighten control and create novel processing techniques that improve performance. The processing parameters of drying and annealing temperatures as well as cooling rate were analyzed to see their effect on the structure of the prepared zinc oxide thin films. There were also preliminary tests done to modify the sol-gel process to include silver as a dopant to produce a p-type thin film. The results from this work show that the pre- and post- heating temperatures as well as the cooling rate all play their own unique role in the crystallization of the film. Results from silver doping show that more work needs to be done to create a sol-gel derived p-type zinc oxide thin film.

Electrochromic nanocomposite films

DOEpatents

Milliron, Delia; Llordes, Anna; Buonsanti, Raffaella; Garcia, Guillermo

2018-04-10

The present invention provides an electrochromic nanocomposite film. In an exemplary embodiment, the electrochromic nanocomposite film, includes (1) a solid matrix of oxide based material and (2) transparent conducting oxide (TCO) nanostructures embedded in the matrix. In a further embodiment, the electrochromic nanocomposite film farther includes a substrate upon which the matrix is deposited. The present invention also provides a method of preparing an electrochromic nanocomposite film.

Hot gas, regenerative, supported H.sub.2 S sorbents

NASA Technical Reports Server (NTRS)

Voecks, Gerald E. (Inventor); Sharma, Pramod K. (Inventor)

1993-01-01

Efficient, regenerable sorbents for removal of H.sub.2 S from moderately high temperature (usually 200.degree. C.-550.degree.C.) gas streams comprise a porous, high surface area aluminosilicate support, suitably a zeolite, and most preferably a sodium deficient zeolite containing 1 to 20 weight percent of binary metal oxides. The binary oxides are a mixture of a Group VB or VIB metal oxide with a Group IB, IIB or VIII metal oxide such as V-Zn-O, V-Cu-O, Cu-Mo-O, Zn-Mo-O or Fe-Mo-O contained in the support. The sorbent effectively removes H.sub.2 S from the host gas stream in high efficiency and can be repetitively regenerated at least 10 times without loss of activity.

Electro-thermal control of aluminum-doped zinc oxide/vanadium dioxide multilayered thin films for smart-device applications

PubMed Central

Skuza, J. R.; Scott, D. W.; Mundle, R. M.; Pradhan, A. K.

2016-01-01

We demonstrate the electro-thermal control of aluminum-doped zinc oxide (Al:ZnO) /vanadium dioxide (VO2) multilayered thin films, where the application of a small electric field enables precise control of the applied heat to the VO2 thin film to induce its semiconductor-metal transition (SMT). The transparent conducting oxide nature of the top Al:ZnO film can be tuned to facilitate the fine control of the SMT of the VO2 thin film and its associated properties. In addition, the Al:ZnO film provides a capping layer to the VO2 thin film, which inhibits oxidation to a more energetically favorable and stable V2O5 phase. It also decreases the SMT of the VO2 thin film by approximately 5–10 °C because of an additional stress induced on the VO2 thin film and/or an alteration of the oxygen vacancy concentration in the VO2 thin film. These results have significant impacts on technological applications for both passive and active devices by exploiting this near-room-temperature SMT. PMID:26884225

Influence of support electrolytic in the electrodeposition of CuGaSe thin films

DOE PAGES

Fernandez, A. M.; Turner, J. A.; Lara-Lara, B.; ...

2016-11-02

CuGaSe 2 is an important thin film electronic material that possesses several attributes that make it appealing for solar energy conversion. Because of its properties it can be incorporated in to various devices, among the greatest highlights are photovoltaic cells, as well as its potential use as photocathodes for hydrogen production, via the photoelectrolysis. There are several methods of its preparation, most notably electrodeposition that has the potential for large areas and high volumes. Electrodeposition of ternary and/or quaternary semiconductors generally proceeds via the formation of a binary, which is subsequently reacted to form the ternary compound. Several conditions mustmore » be controlled to form binary compounds that include the use of complexing agents, buffers, temperature, etc. Here, we discuss the effect of anion composition in the electrolytic bath and the type of lithium salts, in order to manipulate the atomic concentration of CuGaSe 2 during the electrodeposition of thin films, yielding copper-rich, gallium-rich or stoichiometric thin films. Finally, we present the results of a study on the morphology and structure obtained using two types of substrates both before and after performing a heat treatment.« less

Influence of support electrolytic in the electrodeposition of Cusbnd Gasbnd Se thin films

NASA Astrophysics Data System (ADS)

Fernandez, A. M.; Turner, J. A.; Lara-Lara, B.; Deutsch, T. G.

2017-01-01

CuGaSe2 is an important thin film electronic material that possesses several attributes that make it appealing for solar energy conversion. Due to its properties it can be incorporated in to various devices, among the greatest highlights are photovoltaic cells, as well as its potential use as photocathodes for hydrogen production, via the photoelectrolysis. There are several methods of its preparation, most notably electrodeposition that has the potential for large areas and high volumes. Electrodeposition of ternary and/or quaternary semiconductors generally proceeds via the formation of a binary, which is subsequently reacted to form the ternary compound. Several conditions must be controlled to form binary compounds that include the use of complexing agents, buffers, temperature, etc. In this paper, we discuss the effect of anion composition in the electrolytic bath and the type of lithium salts, in order to manipulate the atomic concentration of CuGaSe2 during the electrodeposition of thin films, yielding copper-rich, gallium-rich or stoichiometric thin films. We also present the results of a study on the morphology and structure obtained using two types of substrates both before and after performing a heat treatment.

Influence of support electrolytic in the electrodeposition of CuGaSe thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fernandez, A. M.; Turner, J. A.; Lara-Lara, B.

CuGaSe 2 is an important thin film electronic material that possesses several attributes that make it appealing for solar energy conversion. Because of its properties it can be incorporated in to various devices, among the greatest highlights are photovoltaic cells, as well as its potential use as photocathodes for hydrogen production, via the photoelectrolysis. There are several methods of its preparation, most notably electrodeposition that has the potential for large areas and high volumes. Electrodeposition of ternary and/or quaternary semiconductors generally proceeds via the formation of a binary, which is subsequently reacted to form the ternary compound. Several conditions mustmore » be controlled to form binary compounds that include the use of complexing agents, buffers, temperature, etc. Here, we discuss the effect of anion composition in the electrolytic bath and the type of lithium salts, in order to manipulate the atomic concentration of CuGaSe 2 during the electrodeposition of thin films, yielding copper-rich, gallium-rich or stoichiometric thin films. Finally, we present the results of a study on the morphology and structure obtained using two types of substrates both before and after performing a heat treatment.« less

Control of nanoscale atomic arrangement in multicomponent thin films by temporally modulated vapour fluxes

NASA Astrophysics Data System (ADS)

Sarakinos, Kostas

2016-09-01

Synthesis of multicomponent thin films using vapor fluxes with a modulated deposition pattern is a potential route for accessing a wide gamut of atomic arrangements and morphologies for property tuning. In the current study, we present a research concept that allows for understanding the combined effect of flux modulation, kinetics and thermodynamics on the growth of multinary thin films. This concept entails the combined use of thin film synthesis by means of multiatomic vapor fluxes modulated with sub-monolayer resolution, deterministic growth simulations and nanoscale microstructure probes. Using this research concept we study structure formation within the archetype immiscible Ag-Cu binary system showing that atomic arrangement and morphology at different length scales is governed by diffusion of near-surface Ag atoms to encapsulate 3D Cu islands growing on 2D Ag layers. Moreover, we explore the relevance of the mechanism outlined above for morphology evolution and structure formation within the miscible Ag-Au binary system. The knowledge generated and the methodology presented herein provides the scientific foundation for tailoring atomic arrangement and physical properties in a wide range of miscible and immiscible multinary systems.

Spectroscopic Studies of Semiconductor Materials for Aggressive-scaled Micro- and Opto-electronic Devices: nc-SiO2, GeO2; ng-Si, Ge and ng-Transition metal (TM) oxides

NASA Astrophysics Data System (ADS)

Cheng, Cheng

Non-crystalline thin film materials are widely used in the semiconductor industry (micro- and optoelectronics) and in green energy, e.g., photovolatic applications. This dissertation under-pins these device application with studies of their electronic structures using derivative X-ray Absorption Spectroscopy (XAS) and derivative Spectroscopic Ellipsometry (SE) for the first time to experimentally determine electronic and intrinsic defect structures. Differences between electron and hole mobilities in c- (and ng-Si) and c- (and ng- Ge), make Ge channels superior to Si channels in for aggressively scaled CMOS field effect transistors (FETs). Bonding between Si and Ge substrates and gate dielectric oxides is the focus this dissertation. The primary objective of this research is to measure and interpret by ab-initio theory the electronic and intrinsic electronic defect structures mirco-electronic thin film materials. This is accomplished for the first time by combining (i) derivative XAS TEY data obtained at the Stanford Synchrotron Radiation Light Source (SSRL) with (ii) derivative Spectroscopic Ellipsometry results obtained at the J.A. Woollam Co. laboratory. All the oxides were deposited in RPECVD system with in-line AES and RHEED. Thins films and gate stacks were annealed in RTA system in Ar to determine temperature dependent changes. 2nd derivative analysis is applied on XAS and SE spectra emphasizing the conduction band (CB) and virtual bound state (VBS) regimes. 2nd derivative SE spectra for ng-Si and ng-Ge each have 3 distinct regimes: (i) 3 excitons, (ii) 2 features in the CB edge region, and (iii) 3 additional exciton features above the IP. Excitonic spectral width provides conductivity electron masses (em0*) and hence electron mobilities. The wider the energy range, the higher the electron mobility in that CB. Spectra of high-K dielectrics have an additional energy regime between the CB edge regime, and the higher eV excitons. This regime has 4 intra-d state transitions. Intra-d states are observed in all high-K dielectrics regardless of morphology, e.g. ng-TiO2, nc- Ti silicate , c-LaTiO3, nc-HfSiON334. This dissertation also discussed spectroscopic studies of: (i) nc-SiO 2, nc-GeO2 and (ii) nc-(SiO2)x(GeO2) 1-x pseudo-binary alloys. These studies, and the interpretation of these spectra and those in Chapter 3 in the This dissertation also discussed spectroscopic studies of: (i) nc-SiO2, nc-GeO2 and (ii) nc-(SiO 2)x(GeO2)1-x pseudo-binary alloys. These studies, and the interpretation of these spectra and those in Chapter 3 in the context of ab-initio theory provide a science base for the implementation of nc-oxides onto Germaniumsubstrates for aggressively scaled CMOS FETs, imaging devices as well as photovoltaics. X-Ray photoelectron spectroscopy(XPS) and Auger electron spectroscopy(AES) were used to determine SiO2 and GeO2 concentration in (SiO2)x(GeO2)1-x alloys. A linear trend in chemical shifts with compositions is observed and explained with charge-potential model, which incorporates the results of calculated partial charge from an empirical model for ionicity. The compositional linear relationships between binding energies nc-SiO 2, nc-GeO2, and (SiO2)x(GeO2)1-x alloy concentration agrees with the calculated results in charge potential model. SE and XAS spectral results show relatively strong O-vacancy in nc-GeO 2. O-vacancy defects in c-SiO2 are weaker. This is due to differences between Ge-O and Si-O bond (657.5kJ/mol and 799.6kJ/mol respectively). SE data shows a strong defect feature in GeO2, while SiO2 has no significant and distinct defect signature. Percolation theory describes the interconnection of bonds, e.g. Si-O and Ge-O in an otherwise nc-material, a (SiO2)x(GeO2)1-x pseudo-binary alloy. Changes in the band-gap energy of binary Si-Ge alloys occur at 0%Si (or 100% Ge), and the band gap energy increases from ˜ 0.6 eV to ˜0.87 eV as the Si concentration increases. A inflection point is at the percolation threshold˜16 %. For larger %Si there are increases to Si CB gap threshold energy of 1.1eV discussed in Chapter 3. The pseudo-binary system, (GeO2)x(SiO2) 1-x has been designated as a confluent double percolation phenomenon. Distinct changes are at percolation thresholds concentrations of: 16% and 84% SiO2, or equivalently at 84% and 16% Ge.

Investigation of physicochemical and tribological properties of transparent oxide semiconducting thin films based on Ti-V oxides

NASA Astrophysics Data System (ADS)

Mazur, M.; Sieradzka, K.; Kaczmarek, D.; Domaradzki, J.; Wojcieszak, D.; Domanowski, P.

2013-08-01

In this paper investigations of structural and optical properties of nanocrystalline Ti-V oxide thin films are described. The films were deposited onto Corning 7059 glass using a modified reactive magnetron sputtering method. Structural investigations of prepared Ti-V oxides with vanadium addition of 19 at. % revealed amorphous structure, while incorporation of 21 and 23 at. % of vanadium resulted in V2O5 formation with crystallites sizes of 12.7 and 32.4 nm, respectively. All prepared thin films belong to transparent oxide semiconductors due to their high transmission level of ca. 60-75 % in the visible light range, and resistivity in the range of 3.3·102-1.4·105 Ωcm. Additionally, wettability and hardness tests were performed in order to evaluate the usefulness of the films for functional coatings.

Plasma enhanced chemical vapor deposition (PECVD) method of forming vanadium oxide films and vanadium oxide thin-films prepared thereby

DOEpatents

Zhang, Ji-Guang; Tracy, C. Edwin; Benson, David K.; Turner, John A.; Liu, Ping

2000-01-01

A method is disclosed of forming a vanadium oxide film on a substrate utilizing plasma enhanced chemical vapor deposition. The method includes positioning a substrate within a plasma reaction chamber and then forming a precursor gas comprised of a vanadium-containing chloride gas in an inert carrier gas. This precursor gas is then mixed with selected amounts of hydrogen and oxygen and directed into the reaction chamber. The amounts of precursor gas, oxygen and hydrogen are selected to optimize the final properties of the vanadium oxide film An rf plasma is generated within the reaction chamber to chemically react the precursor gas with the hydrogen and the oxygen to cause deposition of a vanadium oxide film on the substrate while the chamber deposition pressure is maintained at about one torr or less. Finally, the byproduct gases are removed from the plasma reaction chamber.

Generation of metallic plasmon nanostructures in a thin transparent photosensitive copper oxide film by femtosecond thermochemical decomposition

NASA Astrophysics Data System (ADS)

Danilov, P. A.; Zayarny, D. A.; Ionin, A. A.; Kudryashov, S. I.; Litovko, E. P.; Mel'nik, N. N.; Rudenko, A. A.; Saraeva, I. N.; Umanskaya, S. P.; Khmelnitskii, R. A.

2017-09-01

Irradiation of optically transparent copper (I) oxide film covering a glass substrate with a tightly focused femtosecond laser pulses in the pre-ablation regime leads to film reduction to a metallic colloidal state via a single-photon absorption and its subsequent thermochemical decomposition. This effect was demonstrated by the corresponding measurement of the extinction spectrum in visible spectral range. The laser-induced formation of metallic copper nanoparticles in the focal region inside the bulk oxide film allows direct recording of individual thin-film plasmon nanostructures and optical-range metasurfaces.

Reflectometry-Ellipsometry Reveals Thickness, Growth Rate, and Phase Composition in Oxidation of Copper.

PubMed

Diaz Leon, Juan J; Fryauf, David M; Cormia, Robert D; Zhang, Min-Xian Max; Samuels, Kathryn; Williams, R Stanley; Kobayashi, Nobuhiko P

2016-08-31

The oxidation of copper is a complicated process. Copper oxide develops two stable phases at room temperature and standard pressure (RTSP): cuprous oxide (Cu2O) and cupric oxide (CuO). Both phases have different optical and electrical characteristics that make them interesting for applications such as solar cells or resistive switching devices. For a given application, it is necessary to selectively control oxide thickness and cupric/cuprous oxide phase volume fraction. The thickness and composition of a copper oxide film growing on the surface of copper widely depend on the characteristics of as-deposited copper. In this Research Article, two samples, copper films prepared by two different deposition techniques, electron-beam evaporation and sputtering, were studied. As the core part of the study, the formation of the oxidized copper was analyzed routinely over a period of 253 days using spectroscopic polarized reflectometry-spectroscopic ellipsometry (RE). An effective medium approximation (EMA) model was used to fit the RE data. The RE measurements were complemented and validated by using X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM) and X-ray diffraction (XRD). Our results show that the two samples oxidized under identical laboratory ambient conditions (RTSP, 87% average relative humidity) developed unique oxide films following an inverse-logarithmic growth rate with thickness and composition different from each other over time. Discussion is focused on the ability of RE to simultaneously extract thickness (i.e., growth rate) and composition of copper oxide films and on plausible physical mechanisms responsible for unique oxidation habits observed in the two copper samples. It appears that extended surface characteristics (i.e., surface roughness and grain boundaries) and preferential crystalline orientation of as-deposited polycrystalline copper films control the growth kinetics of the copper oxide film. Analysis based on a noncontact and nondestructive measurement, such as RE, to extract key material parameters is beneficial for conveniently understanding the oxidation process that would ultimately enable copper oxide-based devices at manufacturing scales.

Surface XPS characterization of NiTi shape memory alloy after advanced oxidation processes in UV/H 2O 2 photocatalytic system

NASA Astrophysics Data System (ADS)

Wang, R. M.; Chu, C. L.; Hu, T.; Dong, Y. S.; Guo, C.; Sheng, X. B.; Lin, P. H.; Chung, C. Y.; Chu, P. K.

2007-08-01

Surface structure of NiTi shape memory alloy (SMA) was modified by advanced oxidation processes (AOP) in an ultraviolet (UV)/H 2O 2 photocatalytic system, and then systematically characterized with x-ray photoelectron spectroscopy (XPS). It is found that the AOP in UV/H 2O 2 photocatalytic system leads to formation of titanium oxides film on NiTi substrate. Depth profiles of O, Ni and Ti show such a film possesses a graded interface structure to NiTi substrate and there is no intermediate Ni-rich layer like that produced in conventional high temperature oxidation. Except TiO 2 phase, some titanium suboxides (TiO, Ti 2O 3) may also exist in the titanium oxides film. Oxygen mainly presents in metal oxides and some chemisorbed water and OH - are found in titanium oxides film. Ni nearly reaches zero on the upper surface and relatively depleted in the whole titanium oxides film. The work indicates the AOP in UV/H 2O 2 photocatalytic system is a promising way to favor the widespread application of biomedical NiTi SMA by improving its biocompatibility.

Atomic-Scale Tuning of Layered Binary Metal Oxides for High Temperature Moving Assemblies

DTIC Science & Technology

2015-06-01

AFRL-OSR-VA-TR-2015-0166 Atomic-Scale Tuning of Layered Binary Metal OxideS ASHLIE MARTINI UNIVERSITY OF CALIFORNIA MERCED Final Report 06/01/2015...Assemblies 5a.  CONTRACT NUMBER 5b.  GRANT NUMBER FA9550-12-1-0221 5c.  PROGRAM ELEMENT NUMBER 6.  AUTHOR(S) ASHLIE MARTINI 5d.  PROJECT NUMBER 5e...ABSTRACT UU 18.  NUMBER        OF        PAGES 19a.  NAME OF RESPONSIBLE PERSON ASHLIE MARTINI Standard Form 298 (Rev. 8/98) Prescribed by ANSI Std. Z39.18

High Performance and Highly Reliable ZnO Thin Film Transistor Fabricated by Atomic Layer Deposition for Next Generation Displays

DTIC Science & Technology

2011-08-19

zinc oxide ( ZnO ) thin film as an active channel layer in TFT has become of great interest owing to their specific...630-0192 Japan Phone: +81-743-72-6060 Fax: +81-743-72-6069 E-mail: uraoka@ms.naist.jp Keywords: zinc oxide , thin film transistors , atomic layer...deposition Symposium topic: Transparent Semiconductors Oxides [Abstract] In this study, we fabricated TFTs using ZnO thin film as the

Effects of Oxide Film on the Corrosion Resistance of Titanium Grade 7 in Fluoride-Containing NaCl Brines

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lian, T; Whalen, M T; Wong, L

2004-11-30

The effects of oxide film on the corrosion behavior of Titanium Grade 7 (0.12-0.25% Pd) in fluoride-containing NaCl brines have been investigated. With the presence of a 0.6 {micro}m thick oxide layer, the annealed Ti grade 7 exhibited a significant improvement on the anodic polarization behavior. However, the oxide film did not demonstrate sustainable corrosion resistance in fluoride-containing solutions.

Effect of Zinc Oxide Film Deposition Position on the Characteristics of Zinc Oxide Thin Film Transistors Fabricated by Low-Temperature Magnetron Sputtering

NASA Astrophysics Data System (ADS)

Takechi, Kazushige; Nakata, Mitsuru; Eguchi, Toshimasa; Otsuki, Shigeyoshi; Yamaguchi, Hirotaka; Kaneko, Setsuo

2008-09-01

We report on the effect of zinc oxide (ZnO) film deposition position on the characteristics of ZnO thin-film transistors (TFTs) fabricated by magnetron sputtering with no intentional heating of the substrate. We evaluate the properties of ZnO (channel semiconductor) films deposited at various positions with respect to the target position. We show that the film deposition at a position off-centered from the target results in good TFT characteristics. This might be due to the fact that the off-centered deposition position is effective for suppressing the effect of energetic negative ions in the plasma.

Oxide film on metal substrate reduced to form metal-oxide-metal layer structure

NASA Technical Reports Server (NTRS)

Youngdahl, C. A.

1967-01-01

Electrically conductive layer of zirconium on a zirconium-oxide film residing on a zirconium substrate is formed by reducing the oxide in a sodium-calcium solution. The reduced metal remains on the oxide surface as an adherent layer and seems to form a barrier that inhibits further reaction.

Control of lipid oxidation by nonmigratory active packaging films prepared by photoinitiated graft polymerization.

PubMed

Tian, Fang; Decker, Eric A; Goddard, Julie M

2012-08-08

Transition metal-promoted oxidation impacts the quality, shelf life, and nutrition of many packaged foods. Metal-chelating active packaging therefore offers a means to protect foods against oxidation. Herein, we report the development and characterization of nonmigratory metal-chelating active packaging. To prepare the films, carboxylic acids were grafted onto the surfaces of polypropylene films by photoinitiated graft polymerization of acrylic acid. Attenuated total reflectance/Fourier transform infrared spectroscopy, contact angle, scanning electron microscopy, and iron-chelating assay were used to characterize film properties. Graft polymerization yielded a carboxylic acid density of 68.67 ± 9.99 nmol per cm(2) film, with ferrous iron-chelating activity of 71.07 ± 12.95 nmol per cm(2). The functionalized films extended the lag phase of lipid oxidation in a soybean oil-in-water emulsion system from 2 to 9 days. The application of such nonmigratory active packaging films represents a promising approach to reduce additive use while maintaining food quality.

Cholesterol photosensitised oxidation of horse meat slices stored under different packaging films.

PubMed

Boselli, Emanuele; Rodriguez-Estrada, Maria Teresa; Ferioli, Federico; Caboni, Maria Fiorenza; Lercker, Giovanni

2010-07-01

The effect of the type of packaging film (transparent vs. light-protecting red film) was evaluated on the formation of cholesterol oxidation products (COPs) in refrigerated horse meat slices stored in retail conditions under light exposure for 8h. In meat wrapped with a transparent film, COPs increased from 233 (control) to 317 microg/g of fat, whereas the red film delayed cholesterol oxidation and offered protection against COPs formation, since COPs decreased from 173 (control) to 139 microg/g of fat after 8h of light exposure. In addition, light opened the epoxy ring and led to the formation of triol, which was actually absent at T(0.) A proper packaging film may represent a useful strategy to retard oxidative degradation in a light-sensitive, high pigment- and fat-containing food, such as horse meat. Copyright 2010. Published by Elsevier Ltd.

Unidirectional oxide hetero-interface thin-film diode

DOE Office of Scientific and Technical Information (OSTI.GOV)

Park, Youngmin; Lee, Eungkyu; Lee, Jinwon

2015-10-05

The unidirectional thin-film diode based on oxide hetero-interface, which is well compatible with conventional thin-film fabrication process, is presented. With the metal anode/electron-transporting oxide (ETO)/electron-injecting oxide (EIO)/metal cathode structure, it exhibits that electrical currents ohmically flow at the ETO/EIO hetero-interfaces for only positive voltages showing current density (J)-rectifying ratio of ∼10{sup 5} at 5 V. The electrical properties (ex, current levels, and working device yields) of the thin-film diode (TFD) are systematically controlled by changing oxide layer thickness. Moreover, we show that the oxide hetero-interface TFD clearly rectifies an AC input within frequency (f) range of 10{sup 2} Hz < f < 10{sup 6} Hz, providing amore » high feasibility for practical applications.« less

Suppression of interfacial voids formation during silane (SiH4)-based silicon oxide bonding with a thin silicon nitride capping layer

NASA Astrophysics Data System (ADS)

Lee, Kwang Hong; Bao, Shuyu; Wang, Yue; Fitzgerald, Eugene A.; Seng Tan, Chuan

2018-01-01

The material properties and bonding behavior of silane-based silicon oxide layers deposited by plasma-enhanced chemical vapor deposition were investigated. Fourier transform infrared spectroscopy was employed to determine the chemical composition of the silicon oxide films. The incorporation of hydroxyl (-OH) groups and moisture absorption demonstrates a strong correlation with the storage duration for both as-deposited and annealed silicon oxide films. It is observed that moisture absorption is prevalent in the silane-based silicon oxide film due to its porous nature. The incorporation of -OH groups and moisture absorption in the silicon oxide films increase with the storage time (even in clean-room environments) for both as-deposited and annealed silicon oxide films. Due to silanol condensation and silicon oxidation reactions that take place at the bonding interface and in the bulk silicon, hydrogen (a byproduct of these reactions) is released and diffused towards the bonding interface. The trapped hydrogen forms voids over time. Additionally, the absorbed moisture could evaporate during the post-bond annealing of the bonded wafer pair. As a consequence, defects, such as voids, form at the bonding interface. To address the problem, a thin silicon nitride capping film was deposited on the silicon oxide layer before bonding to serve as a diffusion barrier to prevent moisture absorption and incorporation of -OH groups from the ambient. This process results in defect-free bonded wafers.

Oxide Ceramic Films Grown on 60 Nitinol for NASA and Department of Defense Applications

NASA Technical Reports Server (NTRS)

Miyoshi, Kazuhisa; Street, Kenneth W.; Lukco, Dorothy; Cytron, Sheldon J.

2005-01-01

Both the NASA Glenn Research Center and the U.S. Army Research Laboratory, Development and Engineering Center (ARDEC) have worked to develop oxide ceramic films grown on 60 nitinol (60-wt% nickel and 40-wt% titanium) to decrease friction and increase wear resistance under unlubricated conditions. In general, oxide and nonoxide ceramic films have unique capabilities as mechanical-, chemical-, and thermal-barrier materials in diverse applications, including high-temperature bearings and gas bearings requiring low friction, wear resistance, and chemical stability. All oxide ceramic films grown on 60 nitinol were furnished by ARDEC, and materials and surface characterization and tribological experiments were conducted at Glenn.

Process parameter-growth environment-film property relationships for reactive sputter deposited metal (V, Nb, Zr, Y, Au) oxide, nitride, and oxynitride films. Final report, 1 January 1989-30 June 1993

DOE Office of Scientific and Technical Information (OSTI.GOV)

Aita, C.R.

1993-09-30

The research developed process parameter-growth environment-film property relations (phase maps) for model sputter-deposited transition metal oxides, nitrides, and oxynitrides grown by reactive sputter deposition at low temperature. Optical emission spectrometry was used for plasma diagnostics. The results summarized here include the role of sputtered metal-oxygen molecular flux in oxide film growth; structural differences in highest valence oxides including conditions for amorphous growth; and using fundamental optical absorption edge features to probe short range structural disorder. Eight appendices containing sixteen journal articles are included.

Summary and Evaluation of NRC-Sponsored Stellite 6 Aging and Friction Tests

DOE Office of Scientific and Technical Information (OSTI.GOV)

J. C. Watkins; K. G. DeWall; D. Bramwell

1999-04-01

This report describes four sets of tests sponsored by the U.S. Nuclear Regulatory Commission and conducted by the Idaho National Engineering and Environmental Laboratory. The tests support research addressing the need to provide assurance that motor-operated valves are able to perform their intended safety function, usually to open or close against specified (design basis) flow and pressure loads. One of the parameters that affects a gate valve's operability is the friction between the disc seats and the valve body seats. In most gate valves, these surfaces are hardfaced with Stellite 6, a cobalt-based alloy. The tests described in this reportmore » investigate the changes that occur in the friction as the Stellite 6 surfaces develop an oxide film as they age. Stellite 6 specimens were aged in a corrosion autoclave, the oxide films were examined and characterized, and the specimens were subjected to friction testing in a friction autoclave. A very thin oxide film formed after only a fe w days of natural aging. Even a very thin oxide film caused an increase in friction. The surface structure of the oxide film was dominated by a hard crystalline structure, such that the friction response was analogous to rubbing two pieces of sandpaper together. In the limited data provided by naturally aged specimens (78 days maximum exposure, very thin oxide films), the friction increased with greater aging time, approaching an as-yet-undetermined plateau. Although the thickness of the oxide film increased with greater aging time, the mechanical properties of the oxide film (larger granules with greater aging time) appeared to play a greater role in the friction response. Friction testing of specimens subjected to simulated in-service testing strokes at intervals during the aging process showed only a slight decrease in friction, compared to other specimens. Results from specimens subjected to accelerated aging were inconclusive, because of differences in the structure and comp osition of the oxide films, compared to naturally aged specimens. For the naturally aged specimens, the highest friction occurred on the first stroke. The first stroke smeared the oxide film and dislodged some of the granules, so that subsequent strokes saw lower friction values and less variation in the friction. This result underscores the importance of planning in-plant tests so that data are collected from the first stroke following a period of inactivity.« less

Influence of anodizing conditions on generation of internal cracks in anodic porous tin oxide films grown in NaOH electrolyte

NASA Astrophysics Data System (ADS)

Zaraska, Leszek; Gawlak, Karolina; Gurgul, Magdalena; Dziurka, Magdalena; Nowak, Marlena; Gilek, Dominika; Sulka, Grzegorz D.

2018-05-01

Nanoporous tin oxide layers were synthesized via simple one-step anodic oxidation of a low-purity Sn foil (98.8%) in sodium hydroxide electrolyte. The process of pore formation at the early stage of anodization was discussed on the basis of concepts of oxygen bubble mould effect and viscous flow of oxide. The effect of anodizing conditions on the generation of internal cracks and fractures within the anodic film was investigated in detail. It was confirmed that crack-free tin oxide films can be obtained if the anodization is carried out at the potential of 4 V independently of the electrolyte concentration. On the other hand, the porous anodic film with a totally stacked internal morphology is obtained at the potential of 5 V in 0.1 M NaOH electrolyte. The generation of internal cracks and voids can be attributed to a much lower surface porosity and local trapping of O2 inside the pores of the oxide layer. However, increasing electrolyte concentration allows for obtaining less cracked porous films due to effective and uniform liberation of oxygen bubbles from the channels through completely open pore mouths. Furthermore, it was confirmed that uniformity of the anodic tin oxide layers can be significantly improved by vigorous electrolyte stirring. Finally, we observed that the addition of ethanol to the electrolyte can reduce anodic current density and the oxide growth rate. In consequence, less cracked anodic film can be formed even at the potential of 6 V. The generation of oxygen at the pore bottoms, together with the open pore mouths were found to be critical factors responsible for the anodic formation of crack-free porous tin oxide films.

[Research of the surface oxide film on anodizing Ni-Cr porcelain alloy].

PubMed

Zhu, Song; Sun, Hong-Chen; Zhang, Jing-Wei; Li, Zong-Hui

2006-08-01

To study the shape, thickness and oxide percentage of major metal element of oxide film on Ni-Cr porcelain alloy after anodizing pretreatment. 10 samples were made and divided into 2 groups at random. Then after surface pretreatment, the oxide films of two samples of each group were analyzed using electronic scanning microscope. The rest 3 samples were measured by X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES). Lightly selective solution appeared because the different component parts of the alloy have dissimilar electrode, whose dissolve velocity were quite unlike. The sample's metal surface expanded, so the mechanical interlocking of porcelain and metal increased bond strength. The thickness of oxide film was 1.72 times of the control samples. The oxide percentage of major metal elements such as Cr, Ni and Mo were higher, especially Cr. It initially involved the formation of a thin oxide bound to the alloy and second, the ability of the formed oxide to saturate the porcelain, completing the chemical bond of porcelain to metal. The method of anodizing Ni-Cr porcelain alloy can easily control the forming of oxide film which was thin and its surface pattern was uniform. It is repeated and a good method of surface pretreatment before firing cycle.

Anti-Oxidative and Antibacterial Self-Healing Edible Polyelectrolyte Multilayer Film in Fresh-Cut Fruits.

PubMed

Liu, Xuefan; Han, Wei; Zhu, Yanxi; Xuan, Hongyun; Ren, Jiaoyu; Zhang, Jianhao; Ge, Liqin

2018-04-01

The consumption of fresh-cut fruits is limited because of the oxidation browning and pathogenic bacteria's growth on the fruit surface. Besides, crack of the fresh-keeping film may shorten the preservation time of fruit. In this work, polyelectrolyte multilayer (PEM) film was fabricated by layer-by-layer (LBL) electrostatic deposition method. The film was made by carboxy methylcellulose sodium (CMC) and chitosan (CS). The as-prepared PEM film had good anti-oxidative and antibacterial capability. It inhibited the growth of Gram-negative bacteria and the antibacterial rate was more than 95%. The stratified structure and linear increase of the absorbance in the film verified a linear increase of film thickness. The slight scratched film could self-heal rapidly after the stimulation of water whatever the layer number was. Moreover, the film could heal cracks whose width was far bigger than the thickness. The application of PEM film on fresh-cut apples showed that PEM film had good browning, weight loss and metabolic activity inhibition ability. These results showed that the PEM film is a good candidate as edible film in fresh-cut fruits applications.

Electrical properties of films of zinc oxide nanoparticles and its hybrid with reduced graphene oxide

DOE Office of Scientific and Technical Information (OSTI.GOV)

Madhuri, K. Priya; Bramhaiah, K.; John, Neena S., E-mail: jsneena@cnsms.res.in

Free-standing films of ZnO nanoparticles (NPs) and reduced graphene oxide (rGO)-ZnO NPs hybrid are prepared at a liquid/liquid interface. The films are characterized by UV-visible spectroscopy, X-ray diffraction, scanning electron microscopy and atomic force microscopy. ZnO film consists of spherical aggregated NPs while the hybrid film contains folded sheets of rGO with embedded ZnO NPs. Electrical properties of the films and its photoresponse in presence of UV radiation are investigated using current sensing atomic force microscopy (CSAFM) at nanoscale and bulk measurements using two probe methods. Enhancement in photocurrent is observed in both cases and the current imaging reveals anmore » inhomogeneous contribution by different ZnO grains in the film.« less

Development of a direct patterning method for functional oxide thin films using ultraviolet irradiation and hybrid-cluster gels and its application to thin-film transistor fabrication

NASA Astrophysics Data System (ADS)

Yoshimoto, Yuuki; Li, Jinwang; Shimoda, Tatsuya

2018-04-01

A gel state exists in the solution-solid conversion process. We found that solidification can be promoted by irradiating the gel with ultraviolet (UV) light. In this study, a patterning method without using a vacuum system or employing photoresist materials has been proposed wherein solidification was applied to a gel by UV irradiation. Indium oxide gel, indium gallium oxide gel, lanthanum zirconium oxide gel, and lanthanum ruthenium oxide gels were successfully patterned by using our technique. Moreover, an oxide thin-film transistor was fabricated by our novel patterning method and was successfully operated.

The low temperature oxidation of lithium thin films on HOPG by O 2 and H 2O

DOE PAGES

Wulfsberg, Steven M.; Koel, Bruce E.; Bernasek, Steven L.

2016-04-16

Lithiated graphite and lithium thin films have been used in fusion devices. In this environment, lithiated graphite will undergo oxidation by background gases. In order to gain insight into this oxidation process, thin (< 15 monolayer (ML)) lithium films on highly ordered pyrolytic graphite (HOPG) were exposed in this paper to O 2(g) and H 2O (g) in an ultra-high vacuum chamber. High resolution electron energy loss spectroscopy (HREELS) was used to identify the surface species formed during O 2(g) and H 2O (g) exposure. Auger electron spectroscopy (AES) was used to obtain the relative oxidation rates during O 2(g)more » and H 2O (g) exposure. AES showed that as the lithium film thickness decreased from 15 to 5 to 1 ML, the oxidation rate decreased for both O 2(g) and H 2O (g). HREELS showed that a 15 ML lithium film was fully oxidized after 9.7 L (L) of O 2(g) exposure and Li 2O was formed. HREELS also showed that during initial exposure (< 0.5 L) H 2O (g), lithium hydride and lithium hydroxide were formed on the surface of a 15 ML lithium film. Finally, after 0.5 L of H 2O (g) exposure, the H 2O (g) began to physisorb, and after 15 L of H 2O (g) exposure, the 15 ML lithium film was not fully oxidized.« less

The low temperature oxidation of lithium thin films on HOPG by O 2 and H 2O

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wulfsberg, Steven M.; Koel, Bruce E.; Bernasek, Steven L.

Lithiated graphite and lithium thin films have been used in fusion devices. In this environment, lithiated graphite will undergo oxidation by background gases. In order to gain insight into this oxidation process, thin (< 15 monolayer (ML)) lithium films on highly ordered pyrolytic graphite (HOPG) were exposed in this paper to O 2(g) and H 2O (g) in an ultra-high vacuum chamber. High resolution electron energy loss spectroscopy (HREELS) was used to identify the surface species formed during O 2(g) and H 2O (g) exposure. Auger electron spectroscopy (AES) was used to obtain the relative oxidation rates during O 2(g)more » and H 2O (g) exposure. AES showed that as the lithium film thickness decreased from 15 to 5 to 1 ML, the oxidation rate decreased for both O 2(g) and H 2O (g). HREELS showed that a 15 ML lithium film was fully oxidized after 9.7 L (L) of O 2(g) exposure and Li 2O was formed. HREELS also showed that during initial exposure (< 0.5 L) H 2O (g), lithium hydride and lithium hydroxide were formed on the surface of a 15 ML lithium film. Finally, after 0.5 L of H 2O (g) exposure, the H 2O (g) began to physisorb, and after 15 L of H 2O (g) exposure, the 15 ML lithium film was not fully oxidized.« less

Molecular beam epitaxy and characterization of stannic oxide

NASA Astrophysics Data System (ADS)

White, Mark Earl

Wide bandgap oxides such as tin-doped indium oxide (ITO), zinc oxide (ZnO), and tin oxide (SnO2) are currently used in a variety of technologically important applications, including gas sensors and transparent conducting films for devices such as flat panel displays and photovoltaics. Due to the focus on industrial applications, prior research did not investigate the basic material properties of SnO2 films due to unoptimized growth methods such as RF sputtering and pulsed laser deposition which produced low resistance, polycrystalline films. Beyond these applications, few attempts to enhance and control the fundamental SnO2 properties for semiconducting applications have been reported. This work develops the heteroepitaxy of SnO2 thin films on r-plane Al2O3 by plasma-assisted molecular beam epitaxy (PA-MBE) and demonstrates control of the electrical transport of those films. Phase-pure, epitaxial single crystalline films were controllably and reproducibly grown. X-ray diffraction measurements indicated that these films exhibited the highest structural quality reported. Depending on the epitaxial conditions, tin- and oxygen-rich growth regimes were observed. An unexpected growth rate decrease in the tin-rich regime was determined to be caused by volatile suboxide formation. Excellent transport properties for naturally n-type SnO2 were achieved: the electron mobility, mu, was 103 cm2/V s at a concentration, n, of 2.7 x 1017 cm-3. To control the bulk electron density, antimony was used as an intentional n-type dopant. Antimony-doped film properties showed the highest reported mobilities for doped films (mu = 36 cm2/V s for n = 2.8 x 10 20 cm-3). Films doped with indium had resistivities over five orders-of-magnitude greater than undoped films. These highly resistive films provided a method to control the electrical transport properties. Further research will facilitate detailed studies of the fundamental properties of SnO2 and its development as an oxide with full semiconducting properties.

Optical and semiconductive properties of binary and ternary thin films from the Nb-Ti-O system

NASA Astrophysics Data System (ADS)

Aperador, W.; Yate, L.; Pinzón, M. J.; Caicedo, J. C.

2018-06-01

A study has been conducted based on the Mott-Schottky model acquisition by potentiodynamic electrochemical impedance spectroscopy, to determine the physical-chemical properties of binary TiO2, Nb2O5 and ternary Nb-Ti-O thin films (semiconductor type) based on Nb,Ti, O elements. The technique used for the study of optical properties was that of spectral transmittance, measurements were performed using a spectrophotometer. The consistency of the impedance data has been studied by calculating the Kramers-Kronig relations. The structural properties were analyzed by XRD patterns; the chemical composition measurements for all thin films were made by using XPS technique. So, in this research the transmittance values change from 72.74% for Nb2O5 to 59.68% for Ti-Nb-O with wavelength around 355 nm. The absorption coefficients for all films were analyzed from 31823.87 cm-1 for Nb2O5 to 91240.90 cm-1 for Nb-Ti-O with wavelength around 355 nm evidencing thus a 65% reduction. The direct band gap it was found that the photon energy (band gap Eg) changes in all films from 3.56 eV for Nb2O5 to 3.96 eV for Ti-Nb-O evidencing a 10% reduction. The extinction coefficient values change in all films from 0.038 cm-1 for Nb2O5 to 0.277 cm-1 for Ti-Nb-O films with wavelength around 355 nm, exhibiting an 86% increasing. Finally, it was observed by the Mott-Schottky analysis that the reference potential (Ag/AgCl) changes for all films from -2.09 V for Nb2O5 to -0.80 V for Ti-Nb-O material showing a 62% reduction.

Nanocolumnar Crystalline Vanadium Oxide-Molybdenum Oxide Antireflective Smart Thin Films with Superior Nanomechanical Properties

PubMed Central

Dey, Arjun; Nayak, Manish Kumar; Esther, A. Carmel Mary; Pradeepkumar, Maurya Sandeep; Porwal, Deeksha; Gupta, A. K.; Bera, Parthasarathi; Barshilia, Harish C.; Mukhopadhyay, Anoop Kumar; Pandey, Ajoy Kumar; Khan, Kallol; Bhattacharya, Manjima; Kumar, D. Raghavendra; Sridhara, N.; Sharma, Anand Kumar

2016-01-01

Vanadium oxide-molybdenum oxide (VO-MO) thin (21–475 nm) films were grown on quartz and silicon substrates by pulsed RF magnetron sputtering technique by altering the RF power from 100 to 600 W. Crystalline VO-MO thin films showed the mixed phases of vanadium oxides e.g., V2O5, V2O3 and VO2 along with MoO3. Reversible or smart transition was found to occur just above the room temperature i.e., at ~45–50 °C. The VO-MO films deposited on quartz showed a gradual decrease in transmittance with increase in film thickness. But, the VO-MO films on silicon exhibited reflectance that was significantly lower than that of the substrate. Further, the effect of low temperature (i.e., 100 °C) vacuum (10−5 mbar) annealing on optical properties e.g., solar absorptance, transmittance and reflectance as well as the optical constants e.g., optical band gap, refractive index and extinction coefficient were studied. Sheet resistance, oxidation state and nanomechanical properties e.g., nanohardness and elastic modulus of the VO-MO thin films were also investigated in as-deposited condition as well as after the vacuum annealing treatment. Finally, the combination of the nanoindentation technique and the finite element modeling (FEM) was employed to investigate yield stress and von Mises stress distribution of the VO-MO thin films. PMID:27853234

Solid-state dewetting of single- and bilayer Au-W thin films: Unraveling the role of individual layer thickness, stacking sequence and oxidation on morphology evolution

DOE Office of Scientific and Technical Information (OSTI.GOV)

Herz, A., E-mail: andreas.herz@tu-ilmenau.de, E-mail: dong.wang@tu-ilmenau.de; Franz, A.; Theska, F.

2016-03-15

Self-assembly of ultrathin Au, W, and Au-W bilayer thin films is investigated using a rapid thermal annealing technique in an inert ambient. The solid-state dewetting of Au films is briefly revisited in order to emphasize the role of initial film thickness. W films deposited onto SiO{sub 2} evolve into needle-like nanocrystals rather than forming particle-like agglomerates upon annealing at elevated temperatures. Transmission electron microscopy reveals that such nanocrystals actually consist of tungsten (VI) oxide (WO{sub 3}) which is related to an anisotropic oxide crystal growth out of the thin film. The evolution of W films is highly sensitive to themore » presence of any residual oxygen. Combination of both the dewetting of Au and the oxide crystal growth of WO{sub 3} is realized by using various bilayer film configurations of the immiscible Au and W. At low temperature, Au dewetting is initiated while oxide crystal growth is still suppressed. Depending on the stacking sequence of the Au-W bilayer thin film, W acts either as a substrate or as a passivation layer for the dewetting of Au. Being the ground layer, W changes the wettability of Au which clearly modifies its initial state for the dewetting. Being the top layer, W prevents Au from dewetting regardless of Au film thickness. Moreover, regular pattern formation of Au-WO{sub 3} nanoparticles is observed at high temperature demonstrating how bilayer thin film dewetting can create unique nanostructure arrangements.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kawase, Kazumasa; Uehara, Yasushi; Teramoto, Akinobu

Silicon dioxide (SiO{sub 2}) films formed by chemical vapor deposition (CVD) were treated with oxygen radical oxidation using Ar/O{sub 2} plasma excited by microwave. The mass density depth profiles, carrier trap densities, and current-voltage characteristics of the radical-oxidized CVD-SiO{sub 2} films were investigated. The mass density depth profiles were estimated with x ray reflectivity measurement using synchrotron radiation of SPring-8. The carrier trap densities were estimated with x ray photoelectron spectroscopy time-dependent measurement. The mass densities of the radical-oxidized CVD-SiO{sub 2} films were increased near the SiO{sub 2} surface. The densities of the carrier trap centers in these films weremore » decreased. The leakage currents of the metal-oxide-semiconductor capacitors fabricated by using these films were reduced. It is probable that the insulation properties of the CVD-SiO{sub 2} film are improved by the increase in the mass density and the decrease in the carrier trap density caused by the restoration of the Si-O network with the radical oxidation.« less

Surface acoustic wave/silicon monolithic sensor/processor

NASA Technical Reports Server (NTRS)

Kowel, S. T.; Kornreich, P. G.; Nouhi, A.; Kilmer, R.; Fathimulla, M. A.; Mehter, E.

1983-01-01

A new technique for sputter deposition of piezoelectric zinc oxide (ZnO) is described. An argon-ion milling system was converted to sputter zinc oxide films in an oxygen atmosphere using a pure zinc oxide target. Piezoelectric films were grown on silicon dioxide and silicon dioxide overlayed with gold. The sputtered films were evaluated using surface acoustic wave measurements, X-ray diffraction, scanning electron microscopy, Auger electron spectroscopy, and resistivity measurements. The effect of the sputtering conditions on the film quality and the result of post-deposition annealing are discussed. The application of these films to the generation of surface acoustic waves is also discussed.

Structural and electrical properties of sputter deposited ZnO thin films

NASA Astrophysics Data System (ADS)

Muhammed Shameem P., V.; Mekala, Laxman; Kumar, M. Senthil

2018-05-01

The growth of zinc oxide thin films having different oxygen content was achieved at ambient temperature by reactive dc magnetron sputtering technique and their structural and electrical properties are studied. The structural studies show that the films are polycrystalline with a preferential orientation of the grains along the c-axis [002], which increases with increase in oxygen partial pressure. The grain size and the surface roughness of the zinc oxide films are found to decrease with increasing oxygen partial pressure. It is observed that the resistivity of the zinc oxide films can be tuned from semiconducting to insulating regime by varying the oxygen content.

Celluloid Marginalization: Pedagogical Strategies for Increasing Students' Critical Thought through the Multiple (Re)Readings of Trans* Subjectivities in Film

ERIC Educational Resources Information Center

Nicolazzo, Z.

2014-01-01

Critically analyzing films allows for the interrogation of how such binaries as normal/abnormal, good/bad, and moral/immoral are culturally (re)inscribed, who sets the boundaries of what is deemed socially legible, and who gets to decide where these boundaries are set. This article utilizes critical discourse analysis to explore the transgender…

Pulsed laser deposition of transparent conductive oxide thin films on flexible substrates

NASA Astrophysics Data System (ADS)

Socol, G.; Socol, M.; Stefan, N.; Axente, E.; Popescu-Pelin, G.; Craciun, D.; Duta, L.; Mihailescu, C. N.; Mihailescu, I. N.; Stanculescu, A.; Visan, D.; Sava, V.; Galca, A. C.; Luculescu, C. R.; Craciun, V.

2012-11-01

The influence of target-substrate distance during pulsed laser deposition of indium zinc oxide (IZO), indium tin oxide (ITO) and aluminium-doped zinc oxide (AZO) thin films grown on polyethylene terephthalate (PET) substrates was investigated. It was found that the properties of such flexible transparent conductive oxide (TCO)/PET electrodes critically depend on this parameter. The TCO films that were deposited at distances of 6 and 8 cm exhibited an optical transmittance higher than 90% in the visible range and electrical resistivities around 5 × 10-4 Ω cm. In addition to these excellent electrical and optical characteristics the films grown at 8 cm distance were homogenous, smooth, adherent, and without cracks or any other extended defects, being suitable for opto-electronic device applications.

Low-temperature growth and electronic structures of ambipolar Yb-doped zinc tin oxide transparent thin films

NASA Astrophysics Data System (ADS)

Oh, Seol Hee; Ferblantier, Gerald; Park, Young Sang; Schmerber, Guy; Dinia, Aziz; Slaoui, Abdelilah; Jo, William

2018-05-01

The compositional dependence of the crystal structure, optical transmittance, and surface electric properties of the zinc tin oxide (Zn-Sn-O, shortened ZTO) thin films were investigated. ZTO thin films with different compositional ratios were fabricated on glass and p-silicon wafers using radio frequency magnetron sputtering. The binding energy of amorphous ZTO thin films was examined by a X-ray photoelectron spectroscopy. The optical transmittance over 70% in the visible region for all the ZTO films was observed. The optical band gap of the ZTO films was changed as a result of the competition between the Burstein-Moss effect and renormalization. An electron concentration in the films and surface work function distribution were measured by a Hall measurement and Kelvin probe force microscopy, respectively. The mobility of the n- and p-type ZTO thin films have more than 130 cm2/V s and 15 cm2/V s, respectively. We finally constructed the band structure which contains band gap, work function, and band edges such as valence band maximum and conduction band minimum of ZTO thin films. The present study results suggest that the ZTO thin film is competitive compared with the indium tin oxide, which is a representative material of the transparent conducting oxides, regarding optoelectronic devices applications.

Influence of deposition temperature and amorphous carbon on microstructure and oxidation resistance of magnetron sputtered nanocomposite Crsbnd C films

NASA Astrophysics Data System (ADS)

Nygren, Kristian; Andersson, Matilda; Högström, Jonas; Fredriksson, Wendy; Edström, Kristina; Nyholm, Leif; Jansson, Ulf

2014-06-01

It is known that mechanical and tribological properties of transition metal carbide films can be tailored by adding an amorphous carbon (a-C) phase, thus making them nanocomposites. This paper addresses deposition, microstructure, and for the first time oxidation resistance of magnetron sputtered nanocomposite Crsbnd C/a-C films with emphasis on studies of both phases. By varying the deposition temperature between 20 and 700 °C and alternating the film composition, it was possible to deposit amorphous, nanocomposite, and crystalline Crsbnd C films containing about 70% C and 30% Cr, or 40% C and 60% Cr. The films deposited at temperatures below 300 °C were X-ray amorphous and 500 °C was required to grow crystalline phases. Chronoamperometric polarization at +0.6 V vs. Ag/AgCl (sat. KCl) in hot 1 mM H2SO4 resulted in oxidation of Crsbnd C, yielding Cr2O3 and C, as well as oxidation of C. The oxidation resistance is shown to depend on the deposition temperature and the presence of the a-C phase. Physical characterization of film surfaces show that very thin C/Cr2O3/Crsbnd C layers develop on the present material, which can be used to improve the oxidation resistance of, e.g. stainless steel electrodes.

Charge Trapping in Low Temperature MOS (Metal-Oxide-Silicon) Oxides.

DTIC Science & Technology

1984-08-24

high pressure thermal oxidation (HIPOX). The LPCVD process involved reaction of dichlorosilane with nitrous oxide. The HIPOX process involved dry...oxygen. The LPCVD and HIPOX films were subjected to a variety of annealing treatments. We have systematically investigated the effects of these treatments...systematically altered by annealing treatments. In general, the electron traps in LPCVD oxide films produced by the nitrous oxide- dichlorosilane

Enhanced Reduction of Graphene Oxide on Recyclable Cu Foils to Fabricate Graphene Films with Superior Thermal Conductivity

PubMed Central

Huang, Sheng-Yun; Zhao, Bo; Zhang, Kai; Yuen, Matthew M. F.; Xu, Jian-Bin; Fu, Xian-Zhu; Sun, Rong; Wong, Ching-Ping

2015-01-01

Large-area freestanding graphene films are facilely fabricated by reducing graphene oxide films on recyclable Cu foils in H2-containing atmosphere at high temperature. Cu might act as efficient catalysts for considerably improved reduction of graphene oxide according to the SEM, EDS, XRD, XPS, Raman and TGA results. Comparing to the graphene films with ~30 μm thickness reduced without Cu substrate at 900 °C, the thermal conductivity and electrical conductivity of graphene films reduced on Cu foils are enhanced about 140% to 902 Wm−1K−1 and 3.6 × 104 S/m, respectively. Moreover, the graphene films demonstrate superior thermal conductivity of ~1219 Wm−1K−1 as decreasing the thickness of films to ~10 μm. The graphene films also exhibit excellent mechanical properties and flexibility. PMID:26404674

Controllable film densification and interface flatness for high-performance amorphous indium oxide based thin film transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ou-Yang, Wei, E-mail: OUYANG.Wei@nims.go.jp, E-mail: TSUKAGOSHI.Kazuhito@nims.go.jp; Mitoma, Nobuhiko; Kizu, Takio

2014-10-20

To avoid the problem of air sensitive and wet-etched Zn and/or Ga contained amorphous oxide transistors, we propose an alternative amorphous semiconductor of indium silicon tungsten oxide as the channel material for thin film transistors. In this study, we employ the material to reveal the relation between the active thin film and the transistor performance with aid of x-ray reflectivity study. By adjusting the pre-annealing temperature, we find that the film densification and interface flatness between the film and gate insulator are crucial for achieving controllable high-performance transistors. The material and findings in the study are believed helpful for realizingmore » controllable high-performance stable transistors.« less

Depth Profiling Analysis of Aluminum Oxidation During Film Deposition in a Conventional High Vacuum System

NASA Technical Reports Server (NTRS)

Kim, Jongmin; Weimer, Jeffrey J.; Zukic, Muamer; Torr, Douglas G.

1994-01-01

The oxidation of aluminum thin films deposited in a conventional high vacuum chamber has been investigated using x-ray photoelectron spectroscopy (XPS) and depth profiling. The state of the Al layer was preserved by coating it with a protective MgF2 layer in the deposition chamber. Oxygen concentrations in the film layers were determined as a function of sputter time (depth into the film). The results show that an oxidized layer is formed at the start of Al deposition and that a less extensively oxidized Al layer is deposited if the deposition rate is fast. The top surface of the Al layer oxidizes very quickly. This top oxidized layer may be thicker than has been previously reported by optical methods. Maximum oxygen concentrations measured by XPS at each Al interface are related to pressure to rate ratios determined during the Al layer deposition.

Study of the Anisotropic Elastoplastic Properties of β-Ga2O3 Films Synthesized on SiC/Si Substrates

NASA Astrophysics Data System (ADS)

Grashchenko, A. S.; Kukushkin, S. A.; Nikolaev, V. I.; Osipov, A. V.; Osipova, E. V.; Soshnikov, I. P.

2018-05-01

The structural and mechanical properties of gallium oxide films grown on silicon crystallographic planes (001), (011), and (111) with a buffer layer of silicon carbide are investigated. Nanoindentation was used to study the elastoplastic properties of gallium oxide and also to determine the elastic recovery parameter of the films under study. The tensile strength, hardness, elasticity tensor, compliance tensor, Young's modulus, Poisson's ratio, and other characteristics of gallium oxide were calculated using quantum chemistry methods. It was found that the gallium oxide crystal is auxetic because, for some stretching directions, the Poisson's ratio takes on negative values. The calculated values correspond quantitatively to the experimental data. It is concluded that the elastoplastic properties of gallium oxide films approximately correspond to the properties of bulk crystals and that a change in the orientation of the silicon surface leads to a significant change in the orientation of gallium oxide.

Structure and method for controlling band offset and alignment at a crystalline oxide-on-semiconductor interface

DOEpatents

McKee, Rodney A.; Walker, Frederick J.

2003-11-25

A crystalline oxide-on-semiconductor structure and a process for constructing the structure involves a substrate of silicon, germanium or a silicon-germanium alloy and an epitaxial thin film overlying the surface of the substrate wherein the thin film consists of a first epitaxial stratum of single atomic plane layers of an alkaline earth oxide designated generally as (AO).sub.n and a second stratum of single unit cell layers of an oxide material designated as (A'BO.sub.3).sub.m so that the multilayer film arranged upon the substrate surface is designated (AO).sub.n (A'BO.sub.3).sub.m wherein n is an integer repeat of single atomic plane layers of the alkaline earth oxide AO and m is an integer repeat of single unit cell layers of the A'BO.sub.3 oxide material. Within the multilayer film, the values of n and m have been selected to provide the structure with a desired electrical structure at the substrate/thin film interface that can be optimized to control band offset and alignment.

Design and assembly of ternary Pt/Re/SnO2 NPs by controlling the zeta potential of individual Pt, Re, and SnO2 NPs

NASA Astrophysics Data System (ADS)

Drzymała, Elżbieta; Gruzeł, Grzegorz; Pajor-Świerzy, Anna; Depciuch, Joanna; Socha, Robert; Kowal, Andrzej; Warszyński, Piotr; Parlinska-Wojtan, Magdalena

2018-05-01

In this study Pt, Re, and SnO2 nanoparticles (NPs) were combined in a controlled manner into binary and ternary combinations for a possible application for ethanol oxidation. For this purpose, zeta potentials as a function of the pH of the individual NPs solutions were measured. In order to successfully combine the NPs into Pt/SnO2 and Re/SnO2 NPs, the solutions were mixed together at a pH guaranteeing opposite zeta potentials of the metal and oxide NPs. The individually synthesized NPs and their binary/ternary combinations were characterized by Fourier transform infrared spectroscopy (FTIR) and scanning transmission electron microscopy (STEM) combined with energy dispersive X-ray spectroscopy (EDS) analysis. FTIR and XPS spectroscopy showed that the individually synthesized Pt and Re NPs are metallic and the Sn component was oxidized to SnO2. STEM showed that all NPs are well crystallized and the sizes of the Pt, Re, and SnO2 NPs were 2.2, 1.0, and 3.4 nm, respectively. Moreover, EDS analysis confirmed the successful formation of binary Pt/SnO2 and Re/SnO2 NP, as well as ternary Pt/Re/SnO2 NP combinations. This study shows that by controlling the zeta potential of individual metal and oxide NPs, it is possible to assemble them into binary and ternary combinations. [Figure not available: see fulltext.

Solid-phase electrochemical reduction of graphene oxide films in alkaline solution

NASA Astrophysics Data System (ADS)

Basirun, Wan J.; Sookhakian, Mehran; Baradaran, Saeid; Mahmoudian, Mohammad R.; Ebadi, Mehdi

2013-09-01

Graphene oxide (GO) film was evaporated onto graphite and used as an electrode to produce electrochemically reduced graphene oxide (ERGO) films by electrochemical reduction in 6 M KOH solution through voltammetric cycling. Fourier transformed infrared and Raman spectroscopy confirmed the presence of ERGO. Electrochemical impedance spectroscopy characterization of ERGO and GO films in ferrocyanide/ferricyanide redox couple with 0.1 M KCl supporting electrolyte gave results that are in accordance with previous reports. Based on the EIS results, ERGO shows higher capacitance and lower charge transfer resistance compared to GO.

Electrochemical fabrication of capacitors

DOEpatents

Mansour, Azzam N.; Melendres, Carlos A.

1999-01-01

A film of nickel oxide is anodically deposited on a graphite sheet held in osition on an electrochemical cell during application of a positive electrode voltage to the graphite sheet while exposed to an electrolytic nickel oxide solution within a volumetrically variable chamber of the cell. An angularly orientated x-ray beam is admitted into the cell for transmission through the deposited nickel oxide film in order to obtain structural information while the film is subject to electrochemical and in-situ x-ray spectroscopy from which optimum film thickness, may be determined by comparative analysis for capacitor fabrication purposes.

High frequency capacitance-voltage characteristics of thermally grown SiO2 films on beta-SiC

NASA Technical Reports Server (NTRS)

Tang, S. M.; Berry, W. B.; Kwor, R.; Zeller, M. V.; Matus, L. G.

1990-01-01

Silicon dioxide films grown under dry and wet oxidation environment on beta-SiC films have been studied. The beta-SiC films had been heteroepitaxially grown on both on-axis and 2-deg off-axis (001) Si substrates. Capacitance-voltage and conductance-voltage characteristics of metal-oxide-semiconductor structures were measured in a frequency range of 10 kHz to 1 MHz. From these measurements, the interface trap density and the effective fixed oxide charge density were observed to be generally lower for off-axis samples.

Fabrication and characterization of lithographically patterned and optically transparent anodic aluminum Oxide (AAO) nanostructure thin film.

PubMed

He, Yuan; Li, Xiang; Que, Long

2012-10-01

Optically transparent anodic aluminum oxide (AAO) nanostructure thin film has been successfully fabricated from lithographically patterned aluminum on indium tin oxide (ITO) glass substrates for the first time, indicating the feasibility to integrate the AAO nanostructures with microdevices or microfluidics for a variety of applications. Both one-step and two-step anodization processes using sulfuric acid and oxalic acid have been utilized for fabricating the AAO nanostructure thin film. The optical properties of the fabricated AAO nanostructure thin film have been evaluated and analyzed.

Photopolymerization-based fabrication of chemical sensing films

DOEpatents

Yang, Xiaoguang; Swanson, Basil I.; Du, Xian-Xian

2003-12-30

A photopolymerization method is disclosed for attaching a chemical microsensor film to an oxide surface including the steps of pretreating the oxide surface to form a functionalized surface, coating the functionalized surface with a prepolymer solution, and polymerizing the prepolymer solution with ultraviolet light to form the chemical microsensor film. The method also allows the formation of molecular imprinted films by photopolymerization. Formation of multilayer sensing films and patterned films is allowed by the use of photomasking techniques to allow patterning of multiple regions of a selected sensing film, or creating a sensor surface containing several films designed to detect different compounds.

Electrocrystallization and scanning probe microscopy of ceramic thin films and superlattices

NASA Astrophysics Data System (ADS)

Hung, Chen-Jen

This dissertation presents an investigation of the electrocrystallization and scanning probe microscopy of ceramic thin films and superlattices. All of the films were deposited from aqueous solution at room temperature with no subsequent heat treatment needed to effect crystallization. Thallium(III) oxide defect chemistry superlattices were electrodeposited by pulsing the applied overpotential during deposition. The defect chemistry of the oxide is dependent on the applied overpotential. High overpotentials favor oxygen vacancies, while low overpotentials favor cation interstitials. Nanometer-scale holes were formed in thin thallium(III) oxide films using the scanning tunneling microscope in humid ambient conditions. Both cathodic and anodic etching reactions were performed on this metal oxide surface. The hole formation was attributed to localized electrochemical etching reactions beneath the STM tip. The scanning tunneling microscope (STM) was also used to both induce local surface modifications and image cleaved Pb-Tl-O superlattices. A trench of 100 nm in width, 32 nm in depth, and over 1 μm in length was formed after sweeping a bias voltage of ±2.5 V for 1 minute using a fixed STM tip. It has been suggested that STM results obtained under ambient conditions must be evaluated with great care because of the possibility of localized electrochemcial reactions. A novel synthesis method for the production of Cu(II) oxide from an alkaline solution containing Cu(II) tartrate was developed. Rietveld refinement of the cupric oxide films reveals pure Cu(II) oxide with no Cu(I) oxide present in the film.

In-situ XPS analysis of oxidized and reduced plasma deposited ruthenium-based thin catalytic films

NASA Astrophysics Data System (ADS)

Balcerzak, Jacek; Redzynia, Wiktor; Tyczkowski, Jacek

2017-12-01

A novel in-situ study of the surface molecular structure of catalytically active ruthenium-based films subjected to the oxidation (in oxygen) and reduction (in hydrogen) was performed in a Cat-Cell reactor combined with a XPS spectrometer. The films were produced by the plasma deposition method (PEMOCVD). It was found that the films contained ruthenium at different oxidation states: metallic (Ru0), RuO2 (Ru+4), and other RuOx (Ru+x), of which content could be changed by the oxidation or reduction, depending on the process temperature. These results allow to predict the behavior of the Ru-based catalysts in different redox environments.

Chemical stability and electrical performance of dual-active-layered zinc-tin-oxide/indium-gallium-zinc-oxide thin-film transistors using a solution process.

PubMed

Kim, Chul Ho; Rim, You Seung; Kim, Hyun Jae

2013-07-10

We investigated the chemical stability and electrical properties of dual-active-layered zinc-tin-oxide (ZTO)/indium-gallium-zinc-oxide (IGZO) structures (DALZI) with the durability of the chemical damage. The IGZO film was easily corroded or removed by an etchant, but the DALZI film was effectively protected by the high chemical stability of ZTO. Furthermore, the electrical performance of the DALZI thin-film transistor (TFT) was improved by densification compared to the IGZO TFT owing to the passivation of the pin holes or pore sites and the increase in the carrier concentration due to the effect of Sn(4+) doping.

Metal Doped Manganese Oxide Thin Films for Supercapacitor Application.

PubMed

Tung, Mai Thanh; Thuy, Hoang Thi Bich; Hang, Le Thi Thu

2015-09-01

Co and Fe doped manganese oxide thin films were prepared by anodic deposition at current density of 50 mA cm(-2) using the electrolyte containing manganese sulfate and either cobalt sulfate or ferrous sulfate. Surface morphology and crystal structure of oxides were studied by scanning electron microscope (SEM) and X-ray diffraction (XRD). Chemical composition of materials was analyzed by X-ray energy dispersive spectroscope (EDS), iodometric titration method and complexometric titration method, respectively. Supercapacitive behavior of Co and Fe doped manganese oxide films were characterized by cyclic voltammetry (CV) and impedance spectroscopy (EIS). The results show that the doped manganese oxides are composed of nano fiber-like structure with radius of 5-20 nm and remain amorphous structure after heat treatment at 100 degrees C for 2 hours. The average valence of manganese increases from +3.808 to +3.867 after doping Co and from +3.808 to +3.846 after doping Fe. The doped manganese oxide film electrodes exhibited preferably ideal pseudo-capacitive behavior. The specific capacitance value of deposited manganese oxide reaches a maximum of 175.3 F/g for doping Co and 244.6 F/g for doping Fe. The thin films retained about 84% of the initial capacity even after 500 cycles of charge-discharge test. Doping Co and Fe decreases diffusion and charge transfer resistance of the films. The electric double layer capacitance and capacitor response frequency are increased after doping.

Performance and stress analysis of metal oxide films for CMOS-integrated gas sensors.

PubMed

Filipovic, Lado; Selberherr, Siegfried

2015-03-25

The integration of gas sensor components into smart phones, tablets and wrist watches will revolutionize the environmental health and safety industry by providing individuals the ability to detect harmful chemicals and pollutants in the environment using always-on hand-held or wearable devices. Metal oxide gas sensors rely on changes in their electrical conductance due to the interaction of the oxide with a surrounding gas. These sensors have been extensively studied in the hopes that they will provide full gas sensing functionality with CMOS integrability. The performance of several metal oxide materials, such as tin oxide (SnO2), zinc oxide (ZnO), indium oxide (In2O3) and indium-tin-oxide (ITO), are studied for the detection of various harmful or toxic cases. Due to the need for these films to be heated to temperatures between 250°C and 550°C during operation in order to increase their sensing functionality, a considerable degradation of the film can result. The stress generation during thin film deposition and the thermo-mechanical stress that arises during post-deposition cooling is analyzed through simulations. A tin oxide thin film is deposited using the efficient and economical spray pyrolysis technique, which involves three steps: the atomization of the precursor solution, the transport of the aerosol droplets towards the wafer and the decomposition of the precursor at or near the substrate resulting in film growth. The details of this technique and a simulation methodology are presented. The dependence of the deposition technique on the sensor performance is also discussed.

Performance and Stress Analysis of Metal Oxide Films for CMOS-Integrated Gas Sensors

PubMed Central

Filipovic, Lado; Selberherr, Siegfried

2015-01-01

The integration of gas sensor components into smart phones, tablets and wrist watches will revolutionize the environmental health and safety industry by providing individuals the ability to detect harmful chemicals and pollutants in the environment using always-on hand-held or wearable devices. Metal oxide gas sensors rely on changes in their electrical conductance due to the interaction of the oxide with a surrounding gas. These sensors have been extensively studied in the hopes that they will provide full gas sensing functionality with CMOS integrability. The performance of several metal oxide materials, such as tin oxide (SnO2), zinc oxide (ZnO), indium oxide (In2O3) and indium-tin-oxide (ITO), are studied for the detection of various harmful or toxic cases. Due to the need for these films to be heated to temperatures between 250 °C and 550 °C during operation in order to increase their sensing functionality, a considerable degradation of the film can result. The stress generation during thin film deposition and the thermo-mechanical stress that arises during post-deposition cooling is analyzed through simulations. A tin oxide thin film is deposited using the efficient and economical spray pyrolysis technique, which involves three steps: the atomization of the precursor solution, the transport of the aerosol droplets towards the wafer and the decomposition of the precursor at or near the substrate resulting in film growth. The details of this technique and a simulation methodology are presented. The dependence of the deposition technique on the sensor performance is also discussed. PMID:25815445

Anodic iridium oxide films: An UPS study of emersed electrodes

NASA Astrophysics Data System (ADS)

Kötz, E. R.; Neff, H.

1985-09-01

Formation of anodic iridium oxide films has been monitored using Ultraviolet Photoemission Spectroscopy (UPS) of the emersed electrodes. The potential dependent valence band spectra clearly show the onset of oxide formation at about 0.6 V versus SCE. The density of states at the Fermi level and the positron of the Fermi level with respect to the maximum of the t 2g band of the oxide indicates a transition from metallic to semiconducting behaviour of the oxide. Protonation of the oxide is associated with increased emission from OH species. A linear correlation between electrode potential and workfunction change is observed for the metal as well as for the oxide. Our results confirm known band theory models and provide a fundamental understanding of the electrochromism of anodic iridium oxide films.

Method of making controlled morphology metal-oxides

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ozcan, Soydan; Lu, Yuan

2016-05-17

A method of making metal oxides having a preselected morphology includes preparing a suspension that includes a solvent, polymeric nanostructures having multiplicities of hydroxyl surface groups and/or carboxyl surface groups, and a metal oxide precursor. The suspension has a preselected ratio of the polymeric nanostructures to the metal oxide precursor of at least 1:3, the preselected ratio corresponding to a preselected morphology. Subsequent steps include depositing the suspension onto a substrate, removing the solvent to form a film, removing the film from the substrate, and annealing the film to volatilize the polymeric nanostructures and convert the metal oxide precursor tomore » metal oxide nanoparticles having the preselected morphology or to a metal oxide nanosheet including conjoined nanoparticles having the preselected morphology.« less

Preparation of reduced graphene oxide/gelatin composite films with reinforced mechanical strength

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Wenchao; Wang, Zhipeng; School of Chemical Engineering, Tianjin University, Tianjin

2012-09-15

Highlights: ► We used and compared different proportion of gelatin and chitosan as reducing agents. ► The mechanical properties of the films are investigated, especially the wet films. ► The cell toxicity of the composite films as biomaterial is carried out. ► The water absorption capabilities of the composite films also studied. -- Abstract: Graphene oxide (GO) was reduced by chitosan/gelatin solution and added to gelatin (Gel) to fabricate reduced graphene oxide/gelatin (RGO/Gel) films by a solvent-casting method using genipin as cross-linking agent. The structure and properties of the films were characterized by scanning electron microscopy (SEM), X-ray powder diffractionmore » (XRD), thermogravimetric analysis (TGA) and UV–vis spectroscopy. The addition of RGO increased the tensile strength of the RGO/Gel films in both dry and wet states, but decreased their elongation at break. The incorperation of RGO also decreased the swelling ability of the films in water. Cell cultures were carried out in order to test the cytotoxicity of the films. The cells grew and reproduced well on the RGO/Gel films, indicating that the addition of RGO has no negative effect on the compatibility of the gelatin. Therefore, the reduced graphene oxide/gelatin composite is a promising biomaterial with excellent mechanical properties and good cell compatibility.« less

Highly conducting and crystalline doubly doped tin oxide films fabricated using a low-cost and simplified spray technique

NASA Astrophysics Data System (ADS)

Ravichandran, K.; Muruganantham, G.; Sakthivel, B.

2009-11-01

Doubly doped (simultaneous doping of antimony and fluorine) tin oxide films (SnO 2:Sb:F) have been fabricated by employing an inexpensive and simplified spray technique using perfume atomizer from aqueous solution of SnCl 2 precursor. The structural studies revealed that the films are highly crystalline in nature with preferential orientation along the (2 0 0) plane. It is found that the size of the crystallites of the doubly doped tin oxide films is larger (69 nm) than that (27 nm) of their undoped counterparts. The dislocation density of the doubly doped film is lesser (2.08×10 14 lines/m 2) when compared with that of the undoped film (13.2×10 14 lines/m 2), indicating the higher degree of crystallinity of the doubly doped films. The SEM images depict that the films are homogeneous and uniform. The optical transmittance in the visible range and the optical band gap of the doubly doped films are 71% and 3.56 eV respectively. The sheet resistance (4.13 Ω/□) attained for the doubly doped film in this study is lower than the values reported for spray deposited fluorine or antimony doped tin oxide films prepared from aqueous solution of SnCl 2 precursor (without using methanol or ethanol).

Defect-mediated room temperature ferromagnetism in vanadium dioxide thin films

NASA Astrophysics Data System (ADS)

Yang, Tsung-Han; Nori, Sudhakar; Zhou, Honghui; Narayan, Jagdish

2009-09-01

High quality epitaxial undoped vanadium oxide (VO2) thin films on c-plane sapphire (0001) substrate have been grown using pulsed laser deposition technique. The as-grown films exhibited excellent structural and transport properties without requiring further annealing treatments for these oxygen-deficient oxide films. The epitaxial growth has been achieved via domain matching epitaxy, where matching of integral multiples of planes occurs across the film-substrate interface. The magnetic properties of vanadium oxide (VO2) films investigated at different temperatures in the range of 10-360 K showed significant magnetic hysteresis as well as saturation of the magnetic moment. The origin of ferromagnetic properties with an estimated Curie temperature above 500 K is discussed in the absence of magnetic impurities in VO2 thin films as determined by x-ray photoelectron spectroscopy, x-ray diffraction, and transmission electron microscopy.

Method for forming porous platinum films

DOEpatents

Maya, Leon

2000-01-01

A method for forming a platinum film includes providing a substrate, sputtering a crystalline platinum oxide layer over at least a portion of the substrate, and reducing the crystalline platinum oxide layer to form the platinum film. A device includes a non-conductive substrate and a platinum layer having a density of between about 2 and 5 g/cm.sup.3 formed over at least a portion of the non-conductive substrate. The platinum films produced in accordance with the present invention provide porous films suitable for use as electrodes, yet require few processing steps. Thus, such films are less costly. Such films may be formed on both conductive and non-conductive substrates. While the invention has been illustrated with platinum, other metals, such as noble metals, that form a low density oxide when reactively sputtered may also be used.

Amorphous Metal Oxide Thin Films from Aqueous Precursors: New Routes to High-kappa Dielectrics, Impact of Annealing Atmosphere Humidity, and Elucidation of Non-Uniform Composition Profiles

NASA Astrophysics Data System (ADS)

Woods, Keenan N.

Metal oxide thin films serve as critical components in many modern technologies, including microelectronic devices. Industrial state-of-the-art production utilizes vapor-phase techniques to make high-quality (dense, smooth, uniform) thin film materials. However, vapor-phase techniques require large energy inputs and expensive equipment and precursors. Solution-phase routes to metal oxides have attracted great interest as cost-effective alternatives to vapor-phase methods and also offer the potential of large-area coverage, facile control of metal composition, and low-temperature processing. Solution deposition has previously been dominated by sol-gel routes, which utilize organic ligands, additives, and/or solvents. However, sol-gel films are often porous and contain residual carbon impurities, which can negatively impact device properties. All-inorganic aqueous routes produce dense, ultrasmooth films without carbon impurities, but the mechanisms involved in converting aqueous precursors to metal oxides are virtually unexplored. Understanding these mechanisms and the parameters that influence them is critical for widespread use of aqueous approaches to prepare microelectronic components. Additionally, understanding (and controlling) density and composition inhomogeneities is important for optimizing electronic properties. An overview of deposition approaches and the challenges facing aqueous routes are presented in Chapter I. A summary of thin film characterization techniques central to this work is given in Chapter II. This dissertation contributes to the field of solution-phase deposition by focusing on three areas. First, an all-inorganic aqueous route to high-kappa metal oxide dielectrics is developed for two ternary systems. Chapters III and IV detail the film formation chemistry and film properties of lanthanum zirconium oxide (LZO) and zirconium aluminum oxide (ZAO), respectively. The functionality of these dielectrics as device components is also demonstrated. Second, the impact of steam annealing on the evolution of aqueous-derived films is reported. Chapter V demonstrates that steam annealing lowers processing temperatures by effectively reducing residual counterion content, improving film stability with respect to water absorption, and enhancing dielectric properties of LZO films. Third, density and composition inhomogeneities in aqueous-derived films are investigated. Chapters VI and VII examine density inhomogeneities in single- and multi-metal component thin films, respectively, and show that these density inhomogeneities are related to inhomogeneous metal component distributions. This dissertation includes previously published coauthored material.

The effect of Mg dopants on magnetic and structural properties of iron oxide and zinc ferrite thin films

NASA Astrophysics Data System (ADS)

Saritaş, Sevda; Ceviz Sakar, Betul; Kundakci, Mutlu; Yildirim, Muhammet

2018-06-01

Iron oxide thin films have been obtained significant interest as a material that put forwards applications in photovoltaics, gas sensors, biosensors, optoelectronic and especially in spintronics. Iron oxide is one of the considerable interest due to its chemical and thermal stability. Metallic ion dopant influenced superexchange interactions and thus changed the structural, electrical and magnetic properties of the thin film. Mg dopped zinc ferrite (Mg:ZnxFe3-xO4) crystal was used to avoid the damage of Fe3O4 (magnetite) crystal instead of Zn2+ in this study. Because the radius of the Mg2+ ion in the A-site (tetrahedral) is almost equal to that of the replaced Fe3+ ion. Inverse-spinel structure in which oxygen ions (O2-) are arranged to form a face-centered cubic (FCC) lattice where there are two kinds of sublattices, namely, A-site and B-site (octahedral) interstitial sites and in which the super exchange interactions occur. In this study, to increase the saturation of magnetization (Ms) value for iron oxide, inverse-spinal ferrite materials have been prepared, in which the iron oxide was doped by multifarious divalent metallic elements including Zn and Mg. Triple and quaternary; iron oxide and zinc ferrite thin films with Mg metal dopants were grown by using Spray Pyrolysis (SP) technique. The structural, electrical and magnetic properties of Mg dopped iron oxide (Fe2O3) and zinc ferrite (ZnxFe3-xO4) thin films have been investigated. Vibrating Sample Magnetometer (VSM) technique was used to study for the magnetic properties. As a result, we can say that Mg dopped iron oxide thin film has huge diamagnetic and of Mg dopped zinc ferrite thin film has paramagnetic property at bigger magnetic field.

Behavior of oxide film at the interface between particles in sintered Al powders by pulse electric-current sintering

NASA Astrophysics Data System (ADS)

Xie, Guoqiang; Ohashi, Osamu; Song, Minghui; Furuya, Kazuo; Noda, Tetsuji

2003-03-01

The microstructure of the bonding interfaces between particles in aluminum (Al) powder sintered specimens by the pulse electric-current sintering (PECS) process was observed, using conventional transmission electron microscopy (CTEM) and high-resolution transmission electron microscopy (HRTEM). The behavior of oxide film at the interface between Al particles and its effect on properties of the sintered specimens were investigated. The results showed there were two kinds of bonding interfaces in the sintered specimens, namely, the direct metal/metal bonding and the metal/oxide film layer/metal bonding interface. By increasing the fraction of the direct metal/metal bonding interfaces, the tensile strength of the sintered specimens increased, and the electrical resistivity decreased. By increasing the loading pressure at higher sintering temperatures or increasing the sintering temperature under loading pressure, the breakdown of oxide film was promoted. The broken oxide film debris was dispersed in aluminum metal near the bonding interfaces between particles.

Thin film seeds for melt processing textured superconductors for practical applications

DOEpatents

Veal, Boyd W.; Paulikas, Arvydas; Balachandran, Uthamalingam; Zhong, Wei

1999-01-01

A method of fabricating bulk superconducting material such as RBa.sub.2 Cu.sub.3 O.sub.7-.delta. where R is La or Y comprising depositing a thin epitaxially oriented film of Nd or Sm (123) on an oxide substrate. The powder oxides of RBa.sub.2 Cu.sub.3 O.sub.7-.delta. or oxides and/or carbonates of R and Ba and Cu present in mole ratios to form RBa.sub.2 Cu.sub.3 O.sub.7-.delta., where R is Y or La are heated, in physical contact with the thin film of Nd or Sm (123) on the oxide substrate to a temperature sufficient to form a liquid phase in the oxide or carbonate mixture while maintaining the thin film solid to grow a large single domain 123 superconducting material. Then the material is cooled. The thin film is between 200 .ANG. and 2000 .ANG.. A construction prepared by the method is also disclosed.

Thin film seeds for melt processing textured superconductors for practical applications

DOEpatents

Veal, B.W.; Paulikas, A.; Balachandran, U.; Zhong, W.

1999-02-09

A method of fabricating bulk superconducting material such as RBa{sub 2}Cu{sub 3}O{sub 7{minus}{delta}} where R is La or Y comprising depositing a thin epitaxially oriented film of Nd or Sm (123) on an oxide substrate is disclosed. The powder oxides of RBa{sub 2}Cu{sub 3}O{sub 7{minus}{delta}} or oxides and/or carbonates of R and Ba and Cu present in mole ratios to form RBa{sub 2}Cu{sub 3}O{sub 7{minus}{delta}}, where R is Y or La are heated, in physical contact with the thin film of Nd or Sm (123) on the oxide substrate to a temperature sufficient to form a liquid phase in the oxide or carbonate mixture while maintaining the thin film solid to grow a large single domain 123 superconducting material. Then the material is cooled. The thin film is between 200 {angstrom} and 2000 {angstrom}. A construction prepared by the method is also disclosed.

Preparation of polyvinyl alcohol graphene oxide phosphonate film and research of thermal stability and mechanical properties.

PubMed

Li, Jihui; Song, Yunna; Ma, Zheng; Li, Ning; Niu, Shuai; Li, Yongshen

2018-05-01

In this article, flake graphite, nitric acid, peroxyacetic acid and phosphoric acid are used to prepare graphene oxide phosphonic and phosphinic acids (GOPAs), and GOPAs and polyvinyl alcohol (PVA) are used to synthesize polyvinyl alcohol graphene oxide phosphonate and phosphinate (PVAGOPs) in the case of faint acidity and ultrasound irradiation, and PVAGOPs are used to fabricate PVAGOPs film, and the structure and morphology of GOPAs, PVAGOPs and PVAGOPs film are characterized, and the thermal stability and mechanical properties of PVAGOPs film are investigated. Based on these, it has been proved that GOPAs consist of graphene oxide phosphonic acid and graphene oxide phosphinic acid, and there are CP covalent bonds between them, and PVAGOPs are composed of GOPAs and PVA, and there are six-member lactone rings between GOPAs and PVA, and the thermal stability and mechanical properties of PVAGOPs film are improved effectively. Copyright © 2018 Elsevier B.V. All rights reserved.

Transparent thin films of indium tin oxide: Morphology-optical investigations, inter dependence analyzes

NASA Astrophysics Data System (ADS)

Prepelita, P.; Filipescu, M.; Stavarache, I.; Garoi, F.; Craciun, D.

2017-12-01

Using a fast and eco-friendly deposition method, ITO thin films with different thicknesses (0.5 μm-0.7 μm) were deposited on glass substrates by radio frequency magnetron sputtering technique. A comparative analysis of these oxide films was then carried out. AFM investigations showed that the deposited films were smooth, uniform and having a surface roughness smaller than 10 nm. X-ray diffraction investigations showed that all samples were polycrystalline and the grain sizes of the films, corresponding to (222) cubic reflection, were found to increase with the increasing film thickness. The optical properties, evaluated by UV-VIS-NIR (190-3000 nm) spectrophotometer, evidenced that the obtained thin films were highly transparent, with a transmission coefficient between 90 and 96%, depending on the film thickness. Various methods (Swanepoel and Drude) were employed to appreciate the optimal behaviour of transparent oxide films, in determining the dielectric optical parameters and refractive index dispersion for ITO films exhibiting interference patterns in the optical transmission spectra. The electrical conductivity also increased as the film thickness increased.

Efficient removal of arsenic from water using a granular adsorbent: Fe-Mn binary oxide impregnated chitosan bead.

PubMed

Qi, Jianying; Zhang, Gaosheng; Li, Haining

2015-10-01

A novel sorbent of Fe-Mn binary oxide impregnated chitosan bead (FMCB) was fabricated through impregnating Fe-Mn binary oxide into chitosan matrix. The FMCB is sphere-like with a diameter of 1.6-1.8 mm, which is effective for both As(V) and As(III) sorption. The maximal sorption capacities are 39.1 and 54.2 mg/g, respectively, outperforming most of reported granular sorbents. The arsenic was mainly removed by adsorbing onto the Fe-Mn oxide component. The coexisting SO4(2-), HCO3(-) and SiO3(2-) have no great influence on arsenic sorption, whereas, the HPO4(2-) shows negative effects. The arsenic-loaded FMCB could be effectively regenerated using NaOH solution and repeatedly used. In column tests, about 1500 and 3200 bed volumes of simulated groundwater containing 233 μg/L As(V) and As(III) were respectively treated before breakthrough. These results demonstrate the superiority of the FMCB in removing As(V) and As(III), indicating that it is a promising candidate for arsenic removal from real drinking water. Copyright © 2015 Elsevier Ltd. All rights reserved.

Grain boundary selective oxidation and intergranular stress corrosion crack growth of high-purity nickel binary alloys in high-temperature hydrogenated water

DOE PAGES

Bruemmer, S. M.; Olszta, M. J.; Toloczko, M. B.; ...

2017-11-26

The effects of alloying elements in Ni-5at%X binary alloys on intergranular (IG) corrosion and stress corrosion cracking (SCC) have been assessed in 300–360 °C hydrogenated water at the Ni/NiO stability line. Alloys with Cr or Al additions exhibited grain boundary oxidation and IGSCC, while localized degradation was not observed for pure Ni, Ni-Cu or Ni-Fe alloys. Environment-enhanced crack growth was determined by comparing the response in water and N 2 gas. Lastly, results demonstrate that selective grain boundary oxidation of Cr and Al promoted IGSCC of these Ni alloys in hydrogenated water.

Grain boundary selective oxidation and intergranular stress corrosion crack growth of high-purity nickel binary alloys in high-temperature hydrogenated water

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bruemmer, S. M.; Olszta, M. J.; Toloczko, M. B.

The effects of alloying elements in Ni-5at%X binary alloys on intergranular (IG) corrosion and stress corrosion cracking (SCC) have been assessed in 300–360 °C hydrogenated water at the Ni/NiO stability line. Alloys with Cr or Al additions exhibited grain boundary oxidation and IGSCC, while localized degradation was not observed for pure Ni, Ni-Cu or Ni-Fe alloys. Environment-enhanced crack growth was determined by comparing the response in water and N 2 gas. Lastly, results demonstrate that selective grain boundary oxidation of Cr and Al promoted IGSCC of these Ni alloys in hydrogenated water.

Grain boundary selective oxidation and intergranular stress corrosion crack growth of high-purity nickel binary alloys in high-temperature hydrogenated water

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bruemmer, S. M.; Olszta, M. J.; Toloczko, M. B.

The effects of alloying elements in Ni-5at%X binary alloys on intergranular (IG) corrosion and stress corrosion cracking (SCC) have been assessed in 300-360°C hydrogenated water at the Ni/NiO stability line. Alloys with Cr or Al additions exhibited grain boundary oxidation and IGSCC, while localized degradation was not observed for pure Ni, Ni-Cu or Ni-Fe alloys. Environment-enhanced crack growth was determined by comparing the response in water and N2 gas. Results demonstrate that selective grain boundary oxidation of Cr and Al promoted IGSCC of these Ni alloys in hydrogenated water.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sharma, S. K.; Mohan, S.; Bysakh, S.

The formation of surface oxide layer as well as compositional changes along the thickness for NiTi shape memory alloy thin films deposited by direct current magnetron sputtering at substrate temperature of 300 °C in the as-deposited condition as well as in the postannealed (at 600 °C) condition have been thoroughly studied by using secondary ion mass spectroscopy, x-ray photoelectron spectroscopy, and scanning transmission electron microscopy-energy dispersive x-ray spectroscopy techniques. Formation of titanium oxide (predominantly titanium dioxide) layer was observed in both as-deposited and postannealed NiTi films, although the oxide layer was much thinner (8 nm) in as-deposited condition. The depletionmore » of Ti and enrichment of Ni below the oxide layer in postannealed films also resulted in the formation of a graded microstructure consisting of titanium oxide, Ni{sub 3}Ti, and B2 NiTi. A uniform composition of B2 NiTi was obtained in the postannealed film only below a depth of 200–250 nm from the surface. Postannealed film also exhibited formation of a ternary silicide (Ni{sub x}Ti{sub y}Si) at the film–substrate interface, whereas no silicide was seen in the as-deposited film. The formation of silicide also caused a depletion of Ni in the film in a region ∼250–300 nm just above the film substrate interface.« less

Measurement of benzenethiol adsorption to nanostructured Pt, Pd, and PtPd films using Raman spectroelectrochemistry.

PubMed

Pomfret, Michael B; Pietron, Jeremy J; Owrutsky, Jeffrey C

2010-05-04

Raman spectroscopy and electrochemical methods were used to study the behavior of the model adsorbate benzenethiol (BT) on nanostructured Pt, Pd, and PtPd electrodes as a function of applied potential. Benzenethiol adsorbs out of ethanolic solutions as the corresponding thiolate, and voltammetric stripping data reveal that BT is oxidatively removed from all of the nanostructured metals upon repeated oxidative and reductive cycling. Oxidative stripping potentials for BT increase in the order Pt < PtPd < Pd, indicating that BT adsorbs most strongly to nanoscale Pd. Yet, BT Raman scattering intensities, measured in situ over time scales of minutes to hours, are most persistent on the film of nanostructured Pt. Raman spectra indicate that adsorbed BT desorbs from nanoscale Pt at oxidizing potentials via cleavage of the Pt-S bond. In contrast, on nanoscale Pd and PtPd, BT is irreversibly lost due to cleavage of BT C-S bonds at oxidizing potentials, which leaves adsorbed sulfur oxides on Pd and PtPd films and effects the desulfurization of BT. While Pd and PtPd films are less sulfur-resistant than Pt films, palladium oxides, which form at higher potentials than Pt oxides, oxidatively desulfurize BT. In situ spectroelectrochemical Raman spectroscopy provides real-time, chemically specific information that complements the cyclic voltammetric data. The combination of these techniques affords a powerful and convenient method for guiding the development of sulfur-tolerant PEMFC catalysts.

Wide Bandgap Semiconductor Nanowires for Electronic, Photonic and Sensing Devices

DTIC Science & Technology

2012-01-05

oxide -based thin film transistors ( TFTs ) have attracted much attention for applications like flexible electronic devices. The...crystals, and ~ 1.5 cm2.V-1.s-1 for pentacene thin films ). A number of groups have demonstrated TFTs based on α- oxide semiconductors such as zinc oxide ...show excellent long-term stability at room temperature. Results: High-performance amorphous (α-) InGaZnO-based thin film transistors ( TFTs )

Silicon oxynitride films deposited by reactive high power impulse magnetron sputtering using nitrous oxide as a single-source precursor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hänninen, Tuomas, E-mail: tuoha@ifm.liu.se; Schmidt, Susann; Jensen, Jens

2015-09-15

Silicon oxynitride thin films were synthesized by reactive high power impulse magnetron sputtering of silicon in argon/nitrous oxide plasmas. Nitrous oxide was employed as a single-source precursor supplying oxygen and nitrogen for the film growth. The films were characterized by elastic recoil detection analysis, x-ray photoelectron spectroscopy, x-ray diffraction, x-ray reflectivity, scanning electron microscopy, and spectroscopic ellipsometry. Results show that the films are silicon rich, amorphous, and exhibit a random chemical bonding structure. The optical properties with the refractive index and the extinction coefficient correlate with the film elemental composition, showing decreasing values with increasing film oxygen and nitrogen content.more » The total percentage of oxygen and nitrogen in the films is controlled by adjusting the gas flow ratio in the deposition processes. Furthermore, it is shown that the film oxygen-to-nitrogen ratio can be tailored by the high power impulse magnetron sputtering-specific parameters pulse frequency and energy per pulse.« less

Hydrophobic and optical characteristics of graphene and graphene oxide films transferred onto functionalized silica particles deposited glass surface

NASA Astrophysics Data System (ADS)

Yilbas, B. S.; Ibrahim, A.; Ali, H.; Khaled, M.; Laoui, T.

2018-06-01

Hydrophobic and optical transmittance characteristics of the functionalized silica particles on the glass surface prior and after transfer of graphene and graphene oxide films on the surface are examined. Nano-size silica particles are synthesized and functionalized via chemical grafting and deposited onto a glass surface. Graphene film, grown on copper substrate, was transferred onto the functionalized silica particles surface through direct fishing method. Graphene oxide layer was deposited onto the functionalized silica particles surface via spin coating technique. Morphological, hydrophobic, and optical characteristics of the functionalized silica particles deposited surface prior and after graphene and graphene oxide films transfer are examined using the analytical tools. It is found that the functionalized silica particles are agglomerated at the surface forming packed structures with few micro/nano size pores. This arrangement gives rise to water droplet contact angle and contact angle hysteresis in the order of 163° and 2°, respectively, and remains almost uniform over the entire surface. Transferring graphene and depositing graphene oxide films over the functionalized silica particles surface lowers the water droplet contact angle slightly (157-160°) and increases the contact angle hysteresis (4°). The addition of the graphene and graphene oxide films onto the surface of the deposited functionalized silica particles improves the optical transmittance.

Nanostructured tin oxide films: Physical synthesis, characterization, and gas sensing properties.

PubMed

Ingole, S M; Navale, S T; Navale, Y H; Bandgar, D K; Stadler, F J; Mane, R S; Ramgir, N S; Gupta, S K; Aswal, D K; Patil, V B

2017-05-01

Nanostructured tin oxide (SnO 2 ) films are synthesized using physical method i.e. thermal evaporation and are further characterized with X-ray diffraction, X-ray photoelectron spectroscopy, scanning electron microscopy, transmission electron microscopy, and atomic force microscopy measurement techniques for confirming its structure and morphology. The chemiresistive properties of SnO 2 films are studied towards different oxidizing and reducing gases where these films have demonstrated considerable selectivity towards oxidizing nitrogen dioxide (NO 2 ) gas with a maximum response of 403% to 100ppm @200°C, and fast response and recovery times of 4s and 210s, respectively, than other test gases. In addition, SnO 2 films are enabling to detect as low as 1ppm NO 2 gas concentration @200°C with 23% response enhancement. Chemiresistive performances of SnO 2 films are carried out in the range of 1-100ppm and reported. Finally, plausible adsorption and desorption reaction mechanism of NO 2 gas molecules with SnO 2 film surface has been thoroughly discussed by means of an impedance spectroscopy analysis. Copyright © 2017 Elsevier Inc. All rights reserved.

Ordering of lamellar block copolymers on oxidized silane coatings

DOE PAGES

Mahadevapuram, Nikhila; Mitra, Indranil; Sridhar, Shyam; ...

2016-01-02

Thin films of lamellar poly(styrene-b-methyl methacrylate) (PS-PMMA) block copolymers are widely investigated for surface patterning. These materials can generate dense arrays of nanoscale lines when the lamellar domains are oriented perpendicular to the substrate. To stabilize this preferred domain orientation, we tuned the substrate surface energy using oxidation of hydrophobic silane coatings. This simple approach is effective for a broad range of PS-PMMA film thicknesses when the oxidation time is optimized, which demonstrates that the substrate coating is energetically neutral with respect to PS and PMMA segments. The lamellar films are characterized by high densities of defects that exhibit amore » strong dependence on film thickness: in-plane topological defects disrupt the lateral order in ultrathin films, while lamellar domains in thick films can bend and tilt to large misorientation angles. As a result, the types and densities of these defects are similar to those observed with other classes of neutral substrate coatings, such as random copolymer brushes, which demonstrates that oxidized silanes can be used to control PS-PMMA self assembly in thin films.« less

Epitaxial Growth of Intermetallic MnPt Films on Oxides and Large Exchange Bias

DOE PAGES

Liu, Zhiqi; Biegalski, Michael D; Hsu, Mr. S. L.; ...

2015-11-05

We achieved a high-quality epitaxial growth of inter­metallic MnPt films on oxides, with potential for multiferroic heterostructure applications. Also, antisite-stabilized spin-flipping induces ferromagnetism in MnPt films, although it is robustly antiferromagnetic in bulk. Moreover, highly ordered antiferromagnetic MnPt films exhibit superiorly large exchange coupling with a ferromagnetic layer.

Droplet-air collision dynamics: Evolution of the film thickness

NASA Astrophysics Data System (ADS)

Opfer, L.; Roisman, I. V.; Venzmer, J.; Klostermann, M.; Tropea, C.

2014-01-01

This study is devoted to the experimental and theoretical investigation of aerodynamic drop breakup phenomena. We show that the phenomena of drop impact onto a rigid wall, drop binary collisions, and aerodynamic drop deformation are similar if the correct scaling is applied. Then we use observations of the deforming drop to estimate the evolution of the film thickness of the bag, the value that determines the size of the fine child drops produced by bag breakup. This prediction of film thickness, based on film kinematics, is validated for the initial stage by direct drop thickness measurements and at the latest stage by the data obtained from the velocity of hole expansion in the film. It is shown that the film thickness correlates well with the dimensionless position of the bag apex.

The effect of hydrogen peroxide on uranium oxide films on 316L stainless steel

NASA Astrophysics Data System (ADS)

Wilbraham, Richard J.; Boxall, Colin; Goddard, David T.; Taylor, Robin J.; Woodbury, Simon E.

2015-09-01

For the first time the effect of hydrogen peroxide on the dissolution of electrodeposited uranium oxide films on 316L stainless steel planchets (acting as simulant uranium-contaminated metal surfaces) has been studied. Analysis of the H2O2-mediated film dissolution processes via open circuit potentiometry, alpha counting and SEM/EDX imaging has shown that in near-neutral solutions of pH 6.1 and at [H2O2] ⩽ 100 μmol dm-3 the electrodeposited uranium oxide layer is freely dissolving, the associated rate of film dissolution being significantly increased over leaching of similar films in pH 6.1 peroxide-free water. At H2O2 concentrations between 1 mmol dm-3 and 0.1 mol dm-3, formation of an insoluble studtite product layer occurs at the surface of the uranium oxide film. In analogy to corrosion processes on common metal substrates such as steel, the studtite layer effectively passivates the underlying uranium oxide layer against subsequent dissolution. Finally, at [H2O2] > 0.1 mol dm-3 the uranium oxide film, again in analogy to common corrosion processes, behaves as if in a transpassive state and begins to dissolve. This transition from passive to transpassive behaviour in the effect of peroxide concentration on UO2 films has not hitherto been observed or explored, either in terms of corrosion processes or otherwise. Through consideration of thermodynamic solubility product and complex formation constant data, we attribute the transition to the formation of soluble uranyl-peroxide complexes under mildly alkaline, high [H2O2] conditions - a conclusion that has implications for the design of both acid minimal, metal ion oxidant-free decontamination strategies with low secondary waste arisings, and single step processes for spent nuclear fuel dissolution such as the Carbonate-based Oxidative Leaching (COL) process.

Effect of a low-density polyethylene film containing butylated hydroxytoluene on lipid oxidation and protein quality of Sierra fish (Scomberomorus sierra) muscle during frozen storage.

PubMed

Torres-Arreola, Wilfrido; Soto-Valdez, Herlinda; Peralta, Elizabeth; Cardenas-López, José Luis; Ezquerra-Brauer, Josafat Marina

2007-07-25

Fresh sierra fish (Scomberomorus sierra) fillets were packed in low-density polyethylene films with butylated hydroxytoluene (BHT-LDPE) added. Fillets packed in LDPE with no BHT were used as controls (LDPE). The packed fillets were stored at -25 degrees C for 120 days in which the film released 66.5% of the antioxidant. The influence of the antioxidant on lipid and protein quality, lipid oxidation, muscle structure changes, and shear-force resistance was recorded. As compared to LDPE films, fillets packed in BHT-LDPE films showed lower lipid oxidation, thiobarbituric acid values (4.20 +/- 0.52 vs 11.95 +/- 1.06 mg malonaldehyde/kg), peroxide values (7.20 +/- 1.38 vs 15.15 +/- 1.48 meq/kg), and free fatty acids (7.98 +/- 0.43 vs 11.83 +/- 1.26% of oleic acid). Fillets packed in BHT-LDPE films showed less tissue damage and lost less firmness than fillets packed in LDPE. A significant relationship between lipid oxidation and texture was detected (R2 adjusted, 0.70-0.73). BHT-LDPE films may be used not only to prevent lipid oxidation but also to minimize protein damage to prolong the shelf life of sierra fish.

Catalytic Activity and Impedance Behavior of Screen-Printed Nickel Oxide as Efficient Water Oxidation Catalysts.

PubMed

Singh, Archana; Fekete, Monika; Gengenbach, Thomas; Simonov, Alexandr N; Hocking, Rosalie K; Chang, Shery L Y; Rothmann, Mathias; Powar, Satvasheel; Fu, Dongchuan; Hu, Zheng; Wu, Qiang; Cheng, Yi-Bing; Bach, Udo; Spiccia, Leone

2015-12-21

We report that films screen printed from nickel oxide (NiO) nanoparticles and microballs are efficient electrocatalysts for water oxidation under near-neutral and alkaline conditions. Investigations of the composition and structure of the screen-printed films by X-ray diffraction, X-ray absorption spectroscopy, and scanning electron microscopy confirmed that the material was present as the cubic NiO phase. Comparison of the catalytic activity of the microball films to that of films fabricated by using NiO nanoparticles, under similar experimental conditions, revealed that the microball films outperform nanoparticle films of similar thickness owing to a more porous structure and higher surface area. A thinner, less-resistive NiO nanoparticle film, however, was found to have higher activity per Ni atom. Anodization in borate buffer significantly improved the activity of all three films. X-ray photoelectron spectroscopy showed that during anodization, a mixed nickel oxyhydroxide phase formed on the surface of all films, which could account for the improved activity. Impedance spectroscopy revealed that surface traps contribute significantly to the resistance of the NiO films. On anodization, the trap state resistance of all films was reduced, which led to significant improvements in activity. In 1.00 m NaOH, both the microball and nanoparticle films exhibit high long-term stability and produce a stable current density of approximately 30 mA cm(-2) at 600 mV overpotential. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Growth behavior of anodic oxide formed by aluminum anodizing in glutaric and its derivative acid electrolytes

NASA Astrophysics Data System (ADS)

Nakajima, Daiki; Kikuchi, Tatsuya; Natsui, Shungo; Suzuki, Ryosuke O.

2014-12-01

The growth behavior of anodic oxide films formed via anodizing in glutaric and its derivative acid solutions was investigated based on the acid dissociation constants of electrolytes. High-purity aluminum foils were anodized in glutaric, ketoglutaric, and acetonedicarboxylic acid solutions under various electrochemical conditions. A thin barrier anodic oxide film grew uniformly on the aluminum substrate by glutaric acid anodizing, and further anodizing caused the film to breakdown due to a high electric field. In contrast, an anodic porous alumina film with a submicrometer-scale cell diameter was successfully formed by ketoglutaric acid anodizing at 293 K. However, the increase and decrease in the temperature of the ketoglutaric acid resulted in non-uniform oxide growth and localized pitting corrosion of the aluminum substrate. An anodic porous alumina film could also be fabricated by acetonedicarboxylic acid anodizing due to the relatively low dissociation constants associated with the acid. Acid dissociation constants are an important factor for the fabrication of anodic porous alumina films.

The potential of cashew gum functionalization as building blocks for layer-by-layer films.

PubMed

Leite, Álvaro J; Costa, Rui R; Costa, Ana M S; Maciel, Jeanny S; Costa, José F G; de Paula, Regina C M; Mano, João F

2017-10-15

Cashew gum (CG), an exudate polysaccharide from Anacardium occidentale trees, was carboxymethylated (CGCm) and oxidized (CGO). These derivatives were characterized by FTIR and zeta potential measurements confirming the success of carboxymethylation and oxidation reactions. Nanostructured multilayered films were then produced through layer-by-layer (LbL) assembly in conjugation with chitosan via electrostatic interactions or Schiff bases covalent bonds. The films were analyzed by QCM-D and AFM. CG functionalization increased the film thickness, with the highest thickness being achieved for the lowest oxidation degree. The roughest surface was obtained for the CGO with the highest oxidation degree due to the predominance of covalent Schiff bases. This work shows that nanostructured films can be assembled and stabilized by covalent bonds in alternative to the conventional electrostatic ones. Moreover, the functionalization of CG can increase its feasibility in multilayers films, widening its potential in biomedical, food industry, or environmental applications. Copyright © 2017 Elsevier Ltd. All rights reserved.

X-ray photoelectron spectroscopy study of radiofrequency-sputtered refractory compound steel interfaces

NASA Technical Reports Server (NTRS)

Wheeler, D. R.; Brainard, W. A.

1978-01-01

Radiofrequency sputtering was used to deposit Mo2C, Mo2B5, and MoSi2 coatings on 440C steel substrates. Both sputter etched and preoxidized substrates were used, and the films were deposited with and without a substrate bias of -300 V. The composition of the coatings was measured as a function of depth by X-ray photoelectron spectroscopy combined with argon ion etching. In the interfacial region there was evidence that bias produced a graded interface in Mo2B5 but not in Mo2C. Oxides of iron and of all film constituents except carbon were presented in all cases but the iron oxide concentration was higher and the layer thicker on the preoxidized substrates. The film and iron oxides were mixed in the MoSi2 and Mo2C films but layered in the Mo2B5 film. The presence of mixed oxides correlates with enhanced film adhesion.

Quantitative analysis of oxygen content in copper oxide films using ultra microbalance

NASA Astrophysics Data System (ADS)

Shu, Yonghua; Wang, Lianhong; Liu, Chong; Fan, Jing

2014-12-01

Copper oxide films were prepared on quartz substrates through electron beam physical vapor deposition in a vacuum chamber, and the films were observed using X-ray diffraction (XRD) and scanning electron microscope (SEM). The oxygen content of the films were analyzed using an ultra microbalance. Results indicated that when the substrate was heated to 600°C and the oxygen flow rate was 5 sccm, the film was composed of 47% Cu and 53% Cu2O (mass percent), and the oxidation ratio of copper was 25%. After the deposition process at the same condition, i.e. the substrate at temperature of 600°C and blowed by oxygen flowrate of 5 sccm, then in-stu annealed at 600°C in low oxygen pressure of 10 Pa for 30 minutes, the film composition became 22% Cu2O and 78% CuO (mass percent), and the oxidation ratio of copper greatly increased to about 88%.

Fully transparent thin film transistors based on zinc oxide channel layer and molybdenum doped indium oxide electrodes

NASA Astrophysics Data System (ADS)

MÄ dzik, Mateusz; Elamurugu, Elangovan; Viegas, Jaime

2016-03-01

In this work we report the fabrication of thin film transistors (TFT) with zinc oxide channel and molybdenum doped indium oxide (IMO) electrodes, achieved by room temperature sputtering. A set of devices was fabricated, with varying channel width and length from 5μm to 300μm. Output and transfer characteristics were then extracted to study the performance of thin film transistors, namely threshold voltage and saturation current, enabling to determine optimal fabrication process parameters. Optical transmission in the UV-VIS-IR are also reported.

Cobalt Modification of Thin Rutile Films Magnetron-Sputtered in Vacuum

NASA Astrophysics Data System (ADS)

Afonin, N. N.; Logacheva, V. A.

2018-04-01

Using X-ray phase analysis, atomic force microscopy, and secondary ion mass-spectrometry, the phase formation and component distribution in a Co-TiO2 film system have been investigated during magnetron sputtering of the metal on the oxide and subsequent vacuum annealing. It has been found that cobalt diffuses deep into titanium oxide to form complex oxides CoTi2O5 and CoTiO3. A mechanism behind their formation at grain boundaries throughout the thickness of the TiO2 film is suggested. It assumes the reactive diffusion of cobalt along grain boundaries in the oxide. A quantitative model of reactive interdiffusion in a bilayer polycrystalline metal-oxide film system with limited solubility of components has been developed. The individual diffusion coefficients of cobalt and titanium have been determined in the temperature interval 923-1073 K.

One Single Graphene Oxide Film for Responsive Actuation.

PubMed

Cheng, Huhu; Zhao, Fei; Xue, Jiangli; Shi, Gaoquan; Jiang, Lan; Qu, Liangti

2016-09-22

Graphene, because of its superior electrical/thermal conductivity, high surface area, excellent mechanical flexibility, and stability, is currently receiving significant attention and benefit to fabricate actuator devices. Here, a sole graphene oxide (GO) film responsive actuator with an integrated self-detecting sensor has been developed. The film exhibits an asymmetric surface structure on its two sides, creating a promising actuation ability triggered by multistimuli, such as moisture, thermals, and infrared light. Meanwhile, the built-in laser-writing reduced graphene oxide (rGO) sensor in the film can detect its own deformation in real time. Smart perceptual fingers in addition to rectangular-shaped and even four-legged walking robots have been developed based on the responsive GO film.

Photocatalysis of zinc oxide nanotip array/titanium oxide film heterojunction prepared by aqueous solution deposition

NASA Astrophysics Data System (ADS)

Lee, Ming-Kwei; Lee, Bo-Wei; Kao, Chen-Yu

2017-05-01

A TiO2 film was prepared on indium tin oxide (ITO)/glass by aqueous solution deposition (ASD) with precursors of ammonium hexafluoro-titanate and boric acid at 40 °C. The photocatalysis of annealed TiO2 film increases with increasing growth time and decreases with increasing growth times longer than 60 min. A ZnO nanotip array was prepared on ZnO seed layer/TiO2 film/glass by aqueous solution deposition with precursors of zinc nitrate and ammonium hydroxide at 70 °C. The photocatalysis of ASD-ZnO/ASD-TiO2 film/ITO glass can be better than that of P25.

Single Crystal Fibers of Yttria-Stabilized Cubic Zirconia with Ternary Oxide Additions

NASA Technical Reports Server (NTRS)

Ritzert, F. J.; Yun, H. M.; Miner, R. V.

1997-01-01

Single crystal fibers of yttria (Y2O3)-stabilized cubic zirconia, (ZrO2) with ternary oxide additions were grown using the laser float zone fiber processing technique. Ternary additions to the ZrO2-Y2O3 binary system were studied aimed at increasing strength while maintaining the high coefficient of thermal expansion of the binary system. Statistical methods aided in identifying the most promising ternary oxide candidate (Ta2O5, Sc2O3, and HfO2) and optimum composition. The yttria, range investigated was 14 to 24 mol % and the ternary oxide component ranged from 1 to 5 mol %. Hafnium oxide was the most promising ternary oxide component based on 816 C tensile strength results and ease of fabrication. The optimum composition for development was 81 ZrO2-14 Y203-5 HfO2 based upon the same elevated temperature strength tests. Preliminary results indicate process improvements could improve the fiber performance. We also investigated the effect of crystal orientation on strength.

Optical and electrical properties of indium tin oxide films near their laser damage threshold [Electrical and optical properties of indium tin oxide films under multi-pulse laser irradiation at 1064 nm

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yoo, Jae -Hyuck; Lange, Andrew; Bude, Jeff

In this paper, we investigated whether the optical and electrical properties of indium tin oxide (ITO) films are degraded under laser irradiation below their laser ablation threshold. While performing multi-pulse laser damage experiments on a single ITO film (4.7 ns, 1064 nm, 10 Hz), we examined the optical and electrical properties in situ. A decrease in reflectance was observed prior to laser damage initiation. However, under sub-damage threshold irradiation, conductivity and reflectance of the film were maintained without measurable degradation. This indicates that ITO films in optoelectronic devices may be operated below their lifetime laser damage threshold without noticeable performancemore » degradation.« less

Understanding Organic Film Behavior on Alloy and Metal Oxides

PubMed Central

Raman, Aparna; Quiñones, Rosalynn; Barriger, Lisa; Eastman, Rachel; Parsi, Arash

2010-01-01

Native oxide surfaces of stainless steel 316L and Nitinol alloys and their constituent metal oxides namely, nickel, chromium, molybdenum, manganese, iron and titanium were modified with long chain organic acids to better understand organic film formation. The adhesion and stability of films of octadecylphosphonic acid, octadecylhydroxamic acid, octadecylcarboxylic acid and octadecylsulfonic acid on these substrates was examined in this study. The films formed on these surfaces were analyzed by diffuse reflectance infrared Fourier transform spectroscopy, contact angle goniometry, atomic force microscopy and matrix assisted laser desorption ionization mass spectrometry. The effect of the acidity of the organic moiety and substrate composition on the film characteristics and stability is discussed. Interestingly, on the alloy surfaces, the presence of less reactive metal sites does not inhibit film formation. PMID:20039608

Optical and electrical properties of indium tin oxide films near their laser damage threshold [Electrical and optical properties of indium tin oxide films under multi-pulse laser irradiation at 1064 nm

DOE PAGES

Yoo, Jae -Hyuck; Lange, Andrew; Bude, Jeff; ...

2017-02-10

In this paper, we investigated whether the optical and electrical properties of indium tin oxide (ITO) films are degraded under laser irradiation below their laser ablation threshold. While performing multi-pulse laser damage experiments on a single ITO film (4.7 ns, 1064 nm, 10 Hz), we examined the optical and electrical properties in situ. A decrease in reflectance was observed prior to laser damage initiation. However, under sub-damage threshold irradiation, conductivity and reflectance of the film were maintained without measurable degradation. This indicates that ITO films in optoelectronic devices may be operated below their lifetime laser damage threshold without noticeable performancemore » degradation.« less

Effects of Graphene Oxide Addition on Mechanical and Thermal Properties of Evoh Films

NASA Astrophysics Data System (ADS)

González-Ruiz, Jesús; Yataco-Lazaro, Lourde; Virginio, Sueli; das Graças da Silva-Valenzuela, Maria; Moura, Esperidiana; Valenzuela-Díaz, Francisco

Currently, ethylene vinyl alcohol (EVOH) is one of the oxygen barrier materials most used for food packaging. The addition of graphene oxide nanosheets to the EVOH matrix is employed to improve their mechanic al and barrier properties. In this work, films of EVOH-based composites reinforced with graphene oxide were prepared by melt extrusion, using a twin screw extruder machine and blown extrusion process. The graphene oxide was prepared via chemical oxidation of natural graphite and then was exfoliated into nanosheets using the sonochemical method. The composite films samples were characterized using FTIR and DSC analysis. In addition, their mechanical properties were also determined.

Atomic layer epitaxy of hematite on indium tin oxide for application in solar energy conversion

DOEpatents

Martinson, Alex B.; Riha, Shannon; Guo, Peijun; Emery, Jonathan D.

2016-07-12

A method to provide an article of manufacture of iron oxide on indium tin oxide for solar energy conversion. An atomic layer epitaxy method is used to deposit an uncommon bixbytite-phase iron (III) oxide (.beta.-Fe.sub.2O.sub.3) which is deposited at low temperatures to provide 99% phase pure .beta.-Fe.sub.2O.sub.3 thin films on indium tin oxide. Subsequent annealing produces pure .alpha.-Fe.sub.2O.sub.3 with well-defined epitaxy via a topotactic transition. These highly crystalline films in the ultra thin film limit enable high efficiency photoelectrochemical chemical water splitting.

PMMA and polystyrene films modification under ion implantation studied by spectroscopic ellipsometry

NASA Astrophysics Data System (ADS)

Leontyev, A. V.; Kovalev, V. I.; Khomich, A. V.; Komarov, Fadei F.; Grigoryev, V. V.; Kamishan, A. S.

2004-05-01

We have applied spectroscopic ellipsometry with binary polarization modulation to study the refractive index n(λ) and extinction coefficient k(λ) spectra of as-deposited and irradiated with nitrogen ions polymethylmethacrylate (PMMA) and polystyrene (PS) films in 300-1030 nm range. The results of performed investigation confirmed the possibility and estimate restrictions of the ion implantation for local change the refractive index of polymeric materials.

Photon induced facile synthesis and growth of CuInS2 absorber thin film for photovoltaic applications

NASA Astrophysics Data System (ADS)

Singh, Manjeet; Jiu, Jinting; Suganuma, Katsuaki

2016-04-01

In this paper, we demonstrate the use of high intensity pulsed light technique for the synthesis of phase pure CuInS2 (CIS) thin film at room temperature. The intense pulse of light is used to induce sintering of binary sulfides CuS and In2S3 to produce CIS phase without any direct thermal treatment. Light energy equivalent to the 706 mJ/cm2 is found to be the best energy to convert the CIS precursor film deposited at room temperature into CIS pure phase and well crystalline film. The CIS absorber film thus prepared is useful in making printed solar cell at room temperature on substrate with large area.

Solution processed metal oxide thin film hole transport layers for high performance organic solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Steirer, K. Xerxes; Berry, Joseph J.; Chesin, Jordan P.

2017-01-10

A method for the application of solution processed metal oxide hole transport layers in organic photovoltaic devices and related organic electronics devices is disclosed. The metal oxide may be derived from a metal-organic precursor enabling solution processing of an amorphous, p-type metal oxide. An organic photovoltaic device having solution processed, metal oxide, thin-film hole transport layer.

Mechanical, Optical, and Barrier Properties of Soy Protein Film As Affected by Phenolic Acid Addition.

PubMed

Insaward, Anchana; Duangmal, Kiattisak; Mahawanich, Thanachan

2015-11-04

This study aimed to explore the effect of phenolic acid addition on properties of soy protein film. Ferulic (FE), caffeic (CA), and gallic (GA) acids as well as their oxidized products were used in this study. Phenolic acid addition was found to have a significant effect (p ≤ 0.05) on the mechanical properties of the film. GA-containing films exhibited the highest tensile strength and elongation at break, followed by those with added CA and FE, respectively. Oxidized phenolic acids were shown to produce a film with higher tensile strength and elongation at break than their unoxidized counterparts. Phenolic acid addition also affected film color and transparency. As compared to the control, phenolic-containing film samples demonstrated reduced water vapor permeability and water solubility and increased contact angle, especially at high concentrations of oxidized phenolic acid addition.

Transpassive Dissolution of Copper and Rapid Formation of Brilliant Colored Copper Oxide Films

NASA Astrophysics Data System (ADS)

Fredj, Narjes; Burleigh, T. David; New Mexico Tech Team

2014-03-01

This investigation describes an electrochemical technique for growing adhesive copper oxide films on copper with attractive colors ranging from gold-brown to pearl with intermediate colors from red violet to gold green. The technique consists of anodically dissolving copper at transpassive potentials in hot sodium hydroxide, and then depositing brilliant color films of Cu2O onto the surface of copper after the anodic potential has been turned off. The color of the copper oxide film depends on the temperature, the anodic potential, the time t1 of polarization, and the time t2, which is the time of immersion after potential has been turned off. The brilliant colored films were characterized using glancing angle x-ray diffraction, and the film was found to be primarily Cu2O. Cyclic voltammetry, chronopotentiometry, scanning electron microscopy, and x-ray photoelectron spectroscopy were also used to characterize these films.

Thin film oxygen partial pressure sensor

NASA Technical Reports Server (NTRS)

Wortman, J. J.; Harrison, J. W.; Honbarrier, H. L.; Yen, J.

1972-01-01

The development is described of a laboratory model oxygen partial pressure sensor using a sputtered zinc oxide thin film. The film is operated at about 400 C through the use of a miniature silicon bar. Because of the unique resistance versus temperature relation of the silicon bar, control of the operational temperature is achieved by controlling the resistance. A circuit for accomplishing this is described. The response of sputtered zinc oxide films of various thicknesses to oxygen, nitrogen, argon, carbon dioxide, and water vapor caused a change in the film resistance. Over a large range, film conductance varied approximately as the square root of the oxygen partial pressure. The presence of water vapor in the gas stream caused a shift in the film conductance at a given oxygen partial pressure. A theoretical model is presented to explain the characteristic features of the zinc oxide response to oxygen.

Sodium alginate/graphene oxide composite films with enhanced thermal and mechanical properties.

PubMed

Ionita, Mariana; Pandele, Madalina Andreea; Iovu, Horia

2013-04-15

Sodium alginate/graphene oxide (Al/GO) nanocomposite films with different loading levels of graphene oxide were prepared by casting from a suspension of the two components. The structure, morphologies and properties of Al/GO films were characterized by Fourier transform infrared (FT-IR) spectroscopy, X-ray diffraction (XRD), scanning (SEM) and transmission electron microscopy (TEM), thermal gravimetric (TG) analysis, and tensile tests. The results revealed that hydrogen bonding and high interfacial adhesion between GO filler and Al matrix significantly changed thermal stability and mechanical properties of the nanocomposite films. The tensile strength (σ) and Young's modulus (E) of Al films containing 6 wt% GO increased from 71 MPa and 0.85 GPa to 113 MPa and 4.18 GPa, respectively. In addition, TG analysis showed that the thermal stability of Al/GO composite films was better than that of neat Al film. Copyright © 2013 Elsevier Ltd. All rights reserved.

Non-hydrolytic metal oxide films for perovskite halide overcoating and stabilization

DOE Office of Scientific and Technical Information (OSTI.GOV)

Martinson, Alex B.; Kim, In Soo

A method of protecting a perovskite halide film from moisture and temperature includes positioning the perovskite halide film in a chamber. The chamber is maintained at a temperature of less than 200 degrees Celsius. An organo-metal compound is inserted into the chamber. A non-hydrolytic oxygen source is subsequently inserted into the chamber. The inserting of the organo-metal compound and subsequent inserting of the non-hydrolytic oxygen source into the chamber is repeated for a predetermined number of cycles. The non-hydrolytic oxygen source and the organo-metal compound interact in the chamber to deposit a non-hydrolytic metal oxide film on perovskite halide film.more » The non-hydrolytic metal oxide film protects the perovskite halide film from relative humidity of greater than 35% and a temperature of greater than 150 degrees Celsius, respectively.« less

Effect of surface oxidation on emissivity properties of pure aluminum in the near infrared region

NASA Astrophysics Data System (ADS)

Zhang, Kaihua; Yu, Kun; Liu, Yufang; Zhao, Yuejin

2017-08-01

Emissivity is a basic thermo physical property of materials and determines the precision of radiation thermometry. The aim of this paper is to study the effect of surface oxidation on the infrared emissivity properties of pure aluminum. The emissivity data presented in this study covers the spectral range between 0.8 and 2.2 µm and temperatures from 473 to 873 K. The samples with different oxidation time were prepared under a controlled environment. The morphology and composition of the samples were characterized by metallographic microscope and XRD techniques before and after oxidation. The thickness of oxide film with different oxidation time was accurately measured by spectroscopic ellipsometer and a parabolic growth was found. In addition, the interference model of an oxidized metal substrate is established to explain the influence of the oxide film thickness on the emissivity. The thickness of oxide film when the interference effect occurs was calculated according to the interference model. The data shows that the maximum value measured was less than the thickness value at the first order constructive interference. Neither peaks nor valleys were observed in emissivity measurements with different oxidation time at 873 K, which could be related to the thin oxide film on sample surface.

Preservation of far-UV aluminum reflectance by means of overcoating with C60 films.

PubMed

Méndez, J A; Larruquert, J I; Aznárez, J A

2000-01-01

Thin films of C(60) were investigated as protective coatings of Al films to preserve their far-UV (FUV) reflectance by inhibition or retardation of their oxidation. Two methods were used for the overcoating of Al films with approximately one monolayer of C(60): (1) deposition of a multilayer film followed by temperature desorption of all but one monolayer and (2) direct deposition of approximately one-monolayer film. We exposed both types of sample to controlled doses of molecular oxygen and water vapor and measured their FUV reflectance before and after exposure to evaluate the achieved protection on the Al films. The whole process of sample preparation, reflectance measurement, sample heating, and oxidation was made without breaking vacuum. Results show that a C(60) monolayer protected Al from oxidation to some extent, although FUV reflectance of unprotected Al films was never exceeded. FUV optical constants of C(60) films and the FUV reflectance of the C(60) film as deposited and as a function of exposure to O(2) were also measured.

Antioxidant activities of distiller dried grains with solubles as protein films containing tea extracts and their application in the packaging of pork meat.

PubMed

Yang, Hyun-Ju; Lee, Ji-Hyeon; Won, Misun; Song, Kyung Bin

2016-04-01

Distiller dried grains with solubles (DDGS) as protein (DP) films were prepared. Additionally, to prepare anti-oxidant films, green tea extract (GTE), oolong tea extract (OTE), and black tea extract (BTE) were incorporated into the DP films. Consequently, the incorporation of the tea extracts did not alter the physical properties of the films much, whereas the antioxidant activities, such as ABTS and DPPH radical scavenging activities were observed. To apply the DP films containing tea extracts to food packaging, pork meat was wrapped with the films and stored at 4 °C for 10 d. During storage, the pork meat wrapped with the DP films containing GTE, OTE, and BTE had less lipid oxidation than did the control. Among the tea extracts, the DP film containing GTE had the greatest antioxidant activity. These results indicate that the DP films containing green tea extracts can be utilized as an anti-oxidative packaging material for pork meat. Copyright © 2015 Elsevier Ltd. All rights reserved.

Rebonding of Se to As and Ge in Ge33As12Se55 films upon thermal annealing: Evidence from x-ray photoelectron spectra investigations

NASA Astrophysics Data System (ADS)

Wang, R. P.; Choi, D. Y.; Rode, A. V.; Madden, S. J.; Luther-Davies, B.

2007-06-01

We have measured and analyzed x-ray photoelectron spectra (XPS) of as-grown and annealed Ge33As12Se55 films compared with bulk material. We found that the as-grown film contains a large number of separated Se clusters which can coalesce with As and Ge after annealing at high temperatures. In addition, both the Ge and As 3d spectra show the presence of oxides. While the Ge oxidation increases with an increasing annealing temperature, As oxidation is almost unaffected by annealing. The difference could be due to their different electro-negativities. Our results suggest that, while thermal annealing is effective to move the film toward the bond structure of bulk glass, the simultaneous surface oxidation must be suppressed in order to achieve high quality films.

Synthesis and characterization of zinc oxide-neem oil-chitosan bionanocomposite for food packaging application.

PubMed

Sanuja, S; Agalya, A; Umapathy, M J

2015-03-01

Nano zinc oxide at different concentrations (0.1, 0.3 and 0.5%) and neem essential oil were incorporated into the chitosan polymer by solution cast method to enhance the properties of the bionanocomposite film. The functional groups, crystalline particle size, thermal stability and morphology were determined using FTIR, XRD, TGA and SEM, respectively. The results showed that 0.5% nano zinc oxide incorporated composite film have improved tensile strength, elongation, film thickness, film transparency and decreased water solubility, swelling and barrier properties due to the presence of neem oil and nano zinc oxide in the polymer matrix. Further antibacterial activity by well diffusion assay method was followed against Escherichia coli which were found to have good inhibition effect. In addition to this food quality application were carried against carrot and compared with the commercial film. Copyright © 2014. Published by Elsevier B.V.

Structural and electrical characteristics of gallium tin oxide thin films prepared by electron cyclotron resonance-metal organic chemical vapor deposition.

PubMed

Park, Ji Hun; Byun, Dongjin; Lee, Joong Kee

2011-08-01

Gallium tin oxide composite (GTO) thin films were prepared by electron cyclotron resonance-metal organic chemical vapor deposition (ECR-MOCVD). The organometallics of tetramethlytin and trimethylgallium were used for precursors of gallium and tin, respectively. X-ray diffraction (XRD) characterization indicated that the gallium tin oxide composite thin films show the nanopolycrystalline of tetragonal rutile structure. Hall measurement indicated that the Ga/[O+Sn] mole ratio play an important role to determine the electrical properties of gallium tin composite oxide thin films. n-type conducting film obtained Ga/[O+Sn] mole ratio of 0.05 exhibited the lowest electrical resistivity of 1.21 x 10(-3) ohms cm. In our experimental range, the optimized carrier concentration of 3.71 x 10(18) cm(-3) was prepared at the Ga/[O+Sn] mole ratio of 0.35.

Stabilization of solar films against hi temperature deactivation

DOEpatents

Jefferson, Clinton F.

1984-03-20

A multi-layer solar energy collector of improved stability comprising: (1) a solar absorptive film consisting essentially of copper oxide, cobalt oxide and manganese oxide; (2) a substrate of quartz, silicate glass or a stainless steel; and (3) an interlayer of platinum, plus a method for preparing a thermally stable multi-layered solar collector, in which the absorptive layer is undercoated with a thin film of platinum to obtain a stable conductor-dielectric tandem.

Titanium-silicon oxide film structures for polarization-modulated infrared reflection absorption spectroscopy

PubMed Central

Dunlop, Iain E.; Zorn, Stefan; Richter, Gunther; Srot, Vesna; Kelsch, Marion; van Aken, Peter A.; Skoda, Maximilian; Gerlach, Alexander; Spatz, Joachim P.; Schreiber, Frank

2010-01-01

We present a titanium-silicon oxide film structure that permits polarization modulated infrared reflection absorption spectroscopy on silicon oxide surfaces. The structure consists of a ~6 nm sputtered silicon oxide film on a ~200 nm sputtered titanium film. Characterization using conventional and scanning transmission electron microscopy, electron energy loss spectroscopy, X-ray photoelectron spectroscopy and X-ray reflectometry is presented. We demonstrate the use of this structure to investigate a selectively protein-resistant self-assembled monolayer (SAM) consisting of silane-anchored, biotin-terminated poly(ethylene glycol) (PEG). PEG-associated IR bands were observed. Measurements of protein-characteristic band intensities showed that this SAM adsorbed streptavidin whereas it repelled bovine serum albumin, as had been expected from its structure. PMID:20418963

In2O3-based multicomponent metal oxide films and their prospects for thermoelectric applications

NASA Astrophysics Data System (ADS)

Korotcenkov, G.; Brinzari, V.; Cho, B. K.

2016-02-01

Thermoelectric properties of In2O3-SnO2-based multi-component metal oxide films formed by spray pyrolysis method are studied. It is shown that the introduction of additional components such as gallium and zinc can control the parameters of the deposited layers. At that, the doping with gallium is more effective for optimization of the efficiency of the thermoelectric conversion. The explanation of the observed changes in the electro-physical and thermoelectric properties of the films at the composition change is given. It is found that the main changes in the properties of multicomponent metal oxide films take place at concentrations of dopants which correspond to their limit solubility in the dominant oxide.

High catalytic activity of oriented 2.0.0 copper(I) oxide grown on graphene film

PubMed Central

Primo, Ana; Esteve-Adell, Ivan; Blandez, Juan F.; Dhakshinamoorthy, Amarajothi; Álvaro, Mercedes; Candu, Natalia; Coman, Simona M.; Parvulescu, Vasile I.; García, Hermenegildo

2015-01-01

Metal oxide nanoparticles supported on graphene exhibit high catalytic activity for oxidation, reduction and coupling reactions. Here we show that pyrolysis at 900 °C under inert atmosphere of copper(II) nitrate embedded in chitosan films affords 1.1.1 facet-oriented copper nanoplatelets supported on few-layered graphene. Oriented (1.1.1) copper nanoplatelets on graphene undergo spontaneous oxidation to render oriented (2.0.0) copper(I) oxide nanoplatelets on few-layered graphene. These films containing oriented copper(I) oxide exhibit as catalyst turnover numbers that can be three orders of magnitude higher for the Ullmann-type coupling, dehydrogenative coupling of dimethylphenylsilane with n-butanol and C–N cross-coupling than those of analogous unoriented graphene-supported copper(I) oxide nanoplatelets. PMID:26509224

Ion beam and dual ion beam sputter deposition of tantalum oxide films

NASA Astrophysics Data System (ADS)

Cevro, Mirza; Carter, George

1994-11-01

Ion beam sputter deposition (IBS) and dual ion beam sputter deposition (DIBS) of tantalum oxide films was investigated at room temperature and compared with similar films prepared by e-gun deposition. Optical properties ie refractive index and extinction coefficient of IBS films were determined in the 250 - 1100 nm range by transmission spectrophotometry and at (lambda) equals 632.8 nm by ellipsometry. They were found to be mainly sensitive to the partial pressure of oxygen used as a reactive gas in the deposition process. The maximum value of the refractive index of IBS deposited tantalum oxide films was n equals 2.15 at (lambda) equals 550 nm and the extinction coefficient of order k equals 2 X 10-4. Films deposited by e-gun deposition had refractive index n equals 2.06 at (lambda) equals 550 nm. Films deposited using DIBS ie deposition assisted by low energy Ar and O2 ions (Ea equals 0 - 300 eV) and low current density (Ji equals 0 - 40 (mu) A/cm2) showed no improvement in the optical properties of the films. Preferential sputtering occurred at Ea(Ar) equals 300 eV and Ji equals 20 (mu) A/cm2 and slightly oxygen deficient films were formed. Different bonding states in the tantalum-oxide films were determined by x-ray spectroscopy while composition of the film and contaminants were determined by Rutherford scattering spectroscopy. Tantalum oxide films formed by IBS contained relatively high Ar content (approximately equals 2.5%) originating from the reflected argon neutrals from the sputtering target while assisted deposition slightly increased the Ar content. Stress in the IBS deposited films was measured by the bending technique. IBS deposited films showed compressive stress with a typical value of s equals 3.2 X 109 dyn/cm2. Films deposited by concurrent ion bombardment showed an increase in the stress as a function of applied current density. The maximum was s approximately equals 5.6 X 109 dyn/cm2 for Ea equals 300 eV and Ji equals 35 (mu) A/cm2. All deposited films were amorphous as measured by the x-ray diffraction method.

Ion-beam and dual-ion-beam sputter deposition of tantalum oxide films

NASA Astrophysics Data System (ADS)

Cevro, Mirza; Carter, George

1995-02-01

Ion-beam sputter deposition (IBS) and dual-ion-beam sputter deposition (DIBS) of tantalum oxide films was investigated at room temperature and compared with similar films prepared by e-gun deposition. The optical properties, i.e., refractive index and extinction coefficient, of IBS films were determined in the 250- to 1100-nm range by transmission spectrophotometry and at (lambda) equals 632.8 nm by ellipsometry. They were found to be mainly sensitive to the partial pressure of oxygen used as a reactive gas in the deposition process. The maximum value of the refractive index of IBS deposited tantalum oxide films was n equals 2.15 at (lambda) equals 550 nm and the extinction coefficient of order k equals 2 X 10-4. Films deposited by e-gun deposition had refractive index n 2.06 at (lambda) equals 550 nm. Films deposited using DIBS, i.e., deposition assisted by low energy Ar and O2 ions (Ea equals 0 to 300 eV) and low current density (Ji equals 0 to 40 (mu) A/cm2), showed no improvement in the optical properties of the films. Preferential sputtering occurred at Ea(Ar) equals 300 eV and Ji equals 20 (mu) A/cm2 and slightly oxygen deficient films were formed. Different bonding states in the tantalum-oxide films were determined by x-ray spectroscopy, whereas composition of the film and contaminants were determined by Rutherford backscattering spectroscopy (RBS). Tantalum oxide films formed by IBS contained relatively high Ar content (approximately equals 2.5%) originating from the reflected argon neutrals from the sputtering target whereas assisted deposition slightly increased the Ar content. Stress in the IBS-deposited films was measured by the bending technique. IBS-deposited films showed compressive stress with a typical value of s equals 3.2 X 109 dyn/cm2. Films deposited by concurrent ion bombardment showed an increase in the stress as a function of applied current density. The maximum was s approximately equals 5.6 X 109 dyn/cm2 for Ea equals 300 eV and Ji equals 35 (mu) A/cm2. All deposited films were amorphous as measured by the x-ray diffraction (XRD) method.

Oxidized film structure and method of making epitaxial metal oxide structure

DOEpatents

Gan, Shupan [Richland, WA; Liang, Yong [Richland, WA

2003-02-25

A stable oxidized structure and an improved method of making such a structure, including an improved method of making an interfacial template for growing a crystalline metal oxide structure, are disclosed. The improved method comprises the steps of providing a substrate with a clean surface and depositing a metal on the surface at a high temperature under a vacuum to form a metal-substrate compound layer on the surface with a thickness of less than one monolayer. The compound layer is then oxidized by exposing the compound layer to essentially oxygen at a low partial pressure and low temperature. The method may further comprise the step of annealing the surface while under a vacuum to further stabilize the oxidized film structure. A crystalline metal oxide structure may be subsequently epitaxially grown by using the oxidized film structure as an interfacial template and depositing on the interfacial template at least one layer of a crystalline metal oxide.

A study to investigate the chemical stability of gallium phosphate oxide/gallium arsenide phosphide

NASA Technical Reports Server (NTRS)

Kuhlman, G. J.

1979-01-01

The elemental composition with depth into the oxide films was examined using secondary ion mass spectrometry. Results indicate that the layers are arsenic-deficient through the bulk of the oxide and arsenic-rich near both the oxide surface and the oxide-semiconductor interface region. Phosphorus is incorporated into the oxide in an approximately uniform manner. The MIS capacitor structures exhibited deep-depletion characteristics and hysteresis indicative of electron trapping at the oxide-semiconductor interface. Post-oxidation annealing of the films in argon or nitrogen generally results in slightly increased dielectric leakage currents and decreased C-V hysteresis effects, and is associated with arsenic loss at the oxide surface. The results of bias-temperature stress experiments indicate that the major instability effects are due to changes in the electron trapping behavior. No changes were observed in the elemental profiles following electrical stressing, indicating that the grown films are chemically stable under device operating conditions.

Emerging ferroelectric transistors with nanoscale channel materials: the possibilities, the limitations

NASA Astrophysics Data System (ADS)

Hong, Xia

2016-03-01

Combining the nonvolatile, locally switchable polarization field of a ferroelectric thin film with a nanoscale electronic material in a field effect transistor structure offers the opportunity to examine and control a rich variety of mesoscopic phenomena and interface coupling. It is also possible to introduce new phases and functionalities into these hybrid systems through rational design. This paper reviews two rapidly progressing branches in the field of ferroelectric transistors, which employ two distinct classes of nanoscale electronic materials as the conducting channel, the two-dimensional (2D) electron gas graphene and the strongly correlated transition metal oxide thin films. The topics covered include the basic device physics, novel phenomena emerging in the hybrid systems, critical mechanisms that control the magnitude and stability of the field effect modulation and the mobility of the channel material, potential device applications, and the performance limitations of these devices due to the complex interface interactions and challenges in achieving controlled materials properties. Possible future directions for this field are also outlined, including local ferroelectric gate control via nanoscale domain patterning and incorporating other emergent materials in this device concept, such as the simple binary ferroelectrics, layered 2D transition metal dichalcogenides, and the 4d and 5d heavy metal compounds with strong spin-orbit coupling.

In-situ X-Ray Absorption Spectroscopy (XAS) Investigation of a Bifunctional Manganese Oxide Catalyst with High Activity for Electrochemical Water Oxidation and Oxygen Reduction

PubMed Central

Benck, Jesse D.; Gul, Sheraz; Webb, Samuel M.; Yachandra, Vittal K.; Yano, Junko; Jaramillo, Thomas F.

2013-01-01

In-situ x-ray absorption spectroscopy (XAS) is a powerful technique that can be applied to electrochemical systems, with the ability to elucidate the chemical nature of electrocatalysts under reaction conditions. In this study, we perform in-situ XAS measurements on a bifunctional manganese oxide (MnOx) catalyst with high electrochemical activity for the oxygen reduction reaction (ORR) and the oxygen evolution reaction (OER). Using x-ray absorption near edge structure (XANES) and extended x-ray absorption fine structure (EXAFS), we find that exposure to an ORR-relevant potential of 0.7 V vs. RHE produces a disordered Mn3II,III,IIIO4 phase with negligible contributions from other phases. After the potential is increased to a highly anodic value of 1.8 V vs. RHE, relevant to the OER, we observe an oxidation of approximately 80% of the catalytic thin film to form a mixed MnIII,IV oxide, while the remaining 20% of the film consists of a less oxidized phase, likely corresponding to unchanged Mn3II,III,IIIO4. XAS and electrochemical characterization of two thin film catalysts with different MnOx thicknesses reveals no significant influence of thickness on the measured oxidation states, at either ORR or OER potentials, but demonstrates that the OER activity scales with film thickness. This result suggests that the films have porous structure, which does not restrict electrocatalysis to the top geometric layer of the film. As the portion of the catalyst film that is most likely to be oxidized at the high potentials necessary for the OER is that which is closest to the electrolyte interface, we hypothesize that the MnIII,IV oxide, rather than Mn3II,III,IIIO4, is the phase pertinent to the observed OER activity. PMID:23758050

Heteroepitaxial growth of tin-doped indium oxide films on single crystalline yttria stabilized zirconia substrates

NASA Astrophysics Data System (ADS)

Kamei, Masayuki; Yagami, Teruyuki; Takaki, Satoru; Shigesato, Yuzo

1994-05-01

Heteroepitaxial growth of tin-doped indium oxide (ITO) film was achieved for the first time by using single crystalline yttria stabilized zirconia (YSZ) as substrates. The epitaxial relationship between ITO film and YSZ substrate was ITO[100]∥YSZ[100]. By comparing the electrical properties of this epitaxial ITO film with that of a randomly oriented polycrystalline ITO film grown on a glass substrate, neither the large angle grain boundaries nor the crystalline orientation were revealed to be dominant in determining the carrier mobility in ITO films.

NASA interdisciplinary collaboration in tribology. A review of oxidational wear

NASA Technical Reports Server (NTRS)

Quinn, T. F. J.

1983-01-01

An in-depth review of oxidational wear of metals is presented. Special emphasis is given to a description of the concept of oxidational wear and the formulation of an Oxidational Wear Theory. The parallelism between the formation of an oxide film for dry contact conditions and the formation of other surface films for a lubricated contact is discussed. The description of oxidational wear is prefaced with a unification of wear modes into two major classes of mild and severe wear including both lubricated and dry contacts. Oxidational wear of metals is a class of mild wear where protective oxide films are formed at real areas of contact and during the time of contact at temperataure T sub c. When the oxide reaches a critical thickness, frequently in the range of 1 to 3 microns, the oxide breaks up and eventually appears as a wear particle. These oxides are preferentially formed on plateaux which alternately carry the load as they reach their critical thickness and are removed. If the system is operated at elevated temperatures, thick oxides can form both out of contact and between the plateaux. Temperature is important in determining the structure of the oxide film present. Spinel oxide (Fe3O4) which forms above 300 C is more protective than the lower temperature rhomobohedral (alpha-Fe2O3) oxide which is abrasive. An Oxidational Wear Theory is derived using a modified Archard wear law expressed in terms of activation energy (Qp) and Arrhenius constant (Ap).

Ultraviolet Electrically Injected Light Sources With Epitaxial ZnO-Based Heterojunctions

DTIC Science & Technology

2007-08-01

ohmic contacts to ZnO , UV photoconductors, and thin film transistors . The integration of ferroelectric oxide thin films with ZnO was also investigated... transistors . The integration of ferroelectric oxide thin films with ZnO was also investigated, as a potential means of locally inverting ZnO to p-type, and to...low contact resistivity ......................... 8 ZnO Thin Film Transistors

Combinatorial screening of halide perovskite thin films and solar cells by mask-defined IR laser molecular beam epitaxy

PubMed Central

Kawashima, Kazuhiro; Okamoto, Yuji; Annayev, Orazmuhammet; Toyokura, Nobuo; Takahashi, Ryota; Lippmaa, Mikk; Itaka, Kenji; Suzuki, Yoshikazu; Matsuki, Nobuyuki; Koinuma, Hideomi

2017-01-01

Abstract As an extension of combinatorial molecular layer epitaxy via ablation of perovskite oxides by a pulsed excimer laser, we have developed a laser molecular beam epitaxy (MBE) system for parallel integration of nano-scaled thin films of organic–inorganic hybrid materials. A pulsed infrared (IR) semiconductor laser was adopted for thermal evaporation of organic halide (A-site: CH3NH3I) and inorganic halide (B-site: PbI2) powder targets to deposit repeated A/B bilayer films where the thickness of each layer was controlled on molecular layer scale by programming the evaporation IR laser pulse number, length, or power. The layer thickness was monitored with an in situ quartz crystal microbalance and calibrated against ex situ stylus profilometer measurements. A computer-controlled movable mask system enabled the deposition of combinatorial thin film libraries, where each library contains a vertically homogeneous film with spatially programmable A- and B-layer thicknesses. On the composition gradient film, a hole transport Spiro-OMeTAD layer was spin-coated and dried followed by the vacuum evaporation of Ag electrodes to form the solar cell. The preliminary cell performance was evaluated by measuring I-V characteristics at seven different positions on the 12.5 mm × 12.5 mm combinatorial library sample with seven 2 mm × 4 mm slits under a solar simulator irradiation. The combinatorial solar cell library clearly demonstrated that the energy conversion efficiency sharply changes from nearly zero to 10.2% as a function of the illumination area in the library. The exploration of deposition parameters for obtaining optimum performance could thus be greatly accelerated. Since the thickness ratio of PbI2 and CH3NH3I can be freely chosen along the shadow mask movement, these experiments show the potential of this system for high-throughput screening of optimum chemical composition in the binary film library and application to halide perovskite solar cell. PMID:28567176

Groundwater Sampling at ISCO Sites: Binary Mixtures of Volatile Organic Compounds and Persulfate

EPA Science Inventory

In-situ chemical oxidation involves the introduction of a chemical oxidant into the subsurface for the purpose of transforming ground-water contaminants into less harmful byproducts. Due to oxidant persistence, ground water samples collected at hazardous waste sites may contain o...

Local structure distortion induced by Ti dopants boosting the pseudocapacitance of RuO2-based supercapacitors

NASA Astrophysics Data System (ADS)

Chen, I.-Li; Wei, Yu-Chen; Lu, Kueih-Tzu; Chen, Tsan-Yao; Hu, Chi-Chang; Chen, Jin-Ming

2015-09-01

Binary oxides with atomic ratios of Ru/Ti = 90/10, 70/30, and 50/50 were fabricated using H2O2-oxidative precipitation with the assistance of a cetyltrimethylammonium bromide (CTAB) template, followed by a thermal treatment at 200 °C. The characteristics of electron structure and local structure extracted from X-ray absorption spectroscopy (XAS) and transmission electron microscopy (TEM) analyses indicate that incorporation of Ti into the RuO2 lattice produces not only the local structural distortion of the RuO6 octahedra in (Ru-Ti)O2 with an increase in the central Ru-Ru distance but also a local crystallization of RuO2. Among the three binary oxides studied, (Ru70-Ti30)O2 exhibits a capacitance improvement of about 1.4-fold relative to the CTAB-modified RuO2, mainly due to the enhanced crystallinity of the distorted RuO6 structure rather than the surface area effect. Upon increasing the extent of Ti doping, the deteriorated supercapacitive performance of (Ru50-Ti50)O2 results from the formation of localized nano-clusters of TiO2 crystallites. These results provide insight into the important role of Ti doping in RuO2 that boosts the pseudocapacitive performance for RuO2-based supercapacitors. The present result is crucial for the design of new binary oxides for supercapacitor applications with extraordinary performance.Binary oxides with atomic ratios of Ru/Ti = 90/10, 70/30, and 50/50 were fabricated using H2O2-oxidative precipitation with the assistance of a cetyltrimethylammonium bromide (CTAB) template, followed by a thermal treatment at 200 °C. The characteristics of electron structure and local structure extracted from X-ray absorption spectroscopy (XAS) and transmission electron microscopy (TEM) analyses indicate that incorporation of Ti into the RuO2 lattice produces not only the local structural distortion of the RuO6 octahedra in (Ru-Ti)O2 with an increase in the central Ru-Ru distance but also a local crystallization of RuO2. Among the three binary oxides studied, (Ru70-Ti30)O2 exhibits a capacitance improvement of about 1.4-fold relative to the CTAB-modified RuO2, mainly due to the enhanced crystallinity of the distorted RuO6 structure rather than the surface area effect. Upon increasing the extent of Ti doping, the deteriorated supercapacitive performance of (Ru50-Ti50)O2 results from the formation of localized nano-clusters of TiO2 crystallites. These results provide insight into the important role of Ti doping in RuO2 that boosts the pseudocapacitive performance for RuO2-based supercapacitors. The present result is crucial for the design of new binary oxides for supercapacitor applications with extraordinary performance. Electronic supplementary information (ESI) available: A series of Ru K-edge EXAFS spectra fitting results for RuO2 together with oxides with different Ru-Ti atomic ratios treated at 200 °C. See DOI: 10.1039/c5nr03660g

Electrochemical detection of nitrite on poly(pyronin Y)/graphene nanocomposites modified ITO substrate

NASA Astrophysics Data System (ADS)

Şinoforoğlu, Mehmet; Dağcı, Kader; Alanyalıoğlu, Murat; Meral, Kadem

2016-06-01

The present study reports on an easy preparation of poly(pyronin Y)/graphene (poly(PyY)/graphene) nanocomposites thin films on indium tin oxide coated glass substrates (ITO). The thin films of poly(PyY)/graphene nanocomposites are prepared by a novel method consisting of three steps; (i) preparation of graphene oxide (GO) thin films on ITO by spin-coating method, (ii) self-assembly of PyY molecules from aqueous solution onto the GO thin film, (iii) surface-confined electropolymerization (SCEP) of the adsorbed PyY molecules on the GO thin film. The as-prepared poly(PyY)/graphene nanocomposites thin films are characterized by using electroanalytical and spectroscopic techniques. Afterwards, the graphene-based polymeric dye thin film on ITO is used as an electrode in an electrochemical cell. Its performance is tested for electrochemical detection of nitrite. Under optimized conditions, the electrocatalytical effect of the nanocomposites thin film through electrochemical oxidation of nitrite is better than that of GO coated ITO.

Production of Silicon Oxide like Thin Films by the Use of Atmospheric Plasma Torch

NASA Astrophysics Data System (ADS)

Ozono, E. M.; Fachini, E. R.; Silva, M. L. P.; Ruchko, L. F.; Galvão, R. M. O.

2015-03-01

The advantages of HMDS (hexamethyldisilazane) APT-plasma films for sensor applications were explored producing films in a three-turn copper coil APT equipment. HMDS was introduced into the argon plasma at four different conditions. Additional flux of oxygen could modulate the presence of organic components in the film, the composition varying from pure inorganic oxides to organo-silane polymers. Oxygen promoted deposition rates as high as 900 nm/min on silicon, acrylic or piezoelectric quartz crystal substrates. Films with a clustered morphology and refractive index of 1.45 were obtained, mainly due to a silicon oxide structure. Raman spectroscopy and XPS data showed the presence of CHn and amorphous carbon in the inorganic matrix. The films were sensitive to the humidity of the air. The adsorptive capabilities of outstanding films were tested in a Quartz Crystal Microbalance (QCM). The results support that those films can be a useful and simple alternative for the development of sensors.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Campbell, Keri R.; Judge, Elizabeth J.; Barefield, James E.

We show the analysis of light water reactor simulated used nuclear fuel using laser-induced breakdown spectroscopy (LIBS) is explored using a simplified version of the main oxide phase. The main oxide phase consists of the actinides, lanthanides, and zirconium. The purpose of this study is to develop a rapid, quantitative technique for measuring zirconium in a uranium dioxide matrix without the need to dissolve the material. A second set of materials including cerium oxide is also analyzed to determine precision and limit of detection (LOD) using LIBS in a complex matrix. Two types of samples are used in this study:more » binary and ternary oxide pellets. The ternary oxide, (U,Zr,Ce)O 2 pellets used in this study are a simplified version the main oxide phase of used nuclear fuel. The binary oxides, (U,Ce)O 2 and (U,Zr)O 2 are also examined to determine spectral emission lines for Ce and Zr, potential spectral interferences with uranium and baseline LOD values for Ce and Zr in a UO 2 matrix. In the spectral range of 200 to 800 nm, 33 cerium lines and 25 zirconium lines were identified and shown to have linear correlation values (R 2) > 0.97 for both the binary and ternary oxides. The cerium LOD in the (U,Ce)O 2 matrix ranged from 0.34 to 1.08 wt% and 0.94 to 1.22 wt% in (U,Ce,Zr)O 2 for 33 of Ce emission lines. The zirconium limit of detection in the (U,Zr)O 2 matrix ranged from 0.84 to 1.15 wt% and 0.99 to 1.10 wt% in (U,Ce,Zr)O 2 for 25 Zr lines. Finally, the effect of multiple elements in the plasma and the impact on the LOD is discussed.« less

Process for growing a film epitaxially upon an oxide surface and structures formed with the process

DOEpatents

McKee, Rodney Allen; Walker, Frederick Joseph

1998-01-01

A process and structure wherein a film comprised of a perovskite or a spinel is built epitaxially upon a surface, such as an alkaline earth oxide surface, involves the epitaxial build up of alternating constituent metal oxide planes of the perovskite or spinel. The first layer of metal oxide built upon the surface includes a metal element which provides a small cation in the crystalline structure of the perovskite or spinel, and the second layer of metal oxide built upon the surface includes a metal element which provides a large cation in the crystalline structure of the perovskite or spinel. The layering sequence involved in the film build up reduces problems which would otherwise result from the interfacial electrostatics at the first atomic layers, and these oxides can be stabilized as commensurate thin films at a unit cell thickness or grown with high crystal quality to thicknesses of 0.5-0.7 .mu.m for optical device applications.

Process for growing a film epitaxially upon an oxide surface and structures formed with the process

DOEpatents

McKee, Rodney A.; Walker, Frederick J.

1995-01-01

A process and structure wherein a film comprised of a perovskite or a spinel is built epitaxially upon a surface, such as an alkaline earth oxide surface, involves the epitaxial build up of alternating constituent metal oxide planes of the perovskite or spinel. The first layer of metal oxide built upon the surface includes a metal element which provides a small cation in the crystalline structure of the perovskite or spinel, and the second layer of metal oxide built upon the surface includes a metal element which provides a large cation in the crystalline structure of the perovskite or spinel. The layering sequence involved in the film build up reduces problems which would otherwise result from the interfacial electrostatics at the first atomic layers, and these oxides can be stabilized as commensurate thin films at a unit cell thickness or grown with high crystal quality to thicknesses of 0.5-0.7 .mu.m for optical device applications.

Surface Modification of Self-Assembled Graphene Oxide for Cell Culture Studies

NASA Astrophysics Data System (ADS)

Swain, John E., III

Thin films show great promise for biological applications, from in situ monitoring to pharmaceutical testing. In this study, a graphene oxide (GO) thin film is prepared with the aim to further functionalize the film for pharmaceutical toxicity screening applications. GO was selected due to its capability to be reduced into an optically transparent and electrically conductive thin film. In addition, GO is derived from carbon, a widely abundant element, in contrast to many other thin films that rely on resource-limited precious metals. Special care was taken to select GO and GO film synthesis methods that minimize the amount of organic-based solvents, maintain reactions at atmospheric pressure and moderate temperatures, and are scalable for manufacturing. Chemical oxidation of graphite flakes was carried out via a modified Hummer's Method with a pre-oxidation step. The resulting GO flakes were self-assembled using commercially available 4-sulfocalix[4]arene. Analytical characterizations (e.g., elemental analysis, XRD, FTIR, Raman, SEM, AFM) were performed to evaluate the success of graphite oxidation and formation of the self-assembled thin film. In order to gain a better understanding of the interactions between GO and sulfocalix (SCX), equilibrium conformations of the SCX molecule and truncated GO were calculated using Spartan'16 Parallels. This study demonstrates that the interaction between the GO and the SCX molecule to create a self-assembled thin film is the result of pi-pi stacking, as hypothesized by Sundramoorthy et al. (2015). The self-assembled GO film was successfully deposited on a polyethylene terephthalate (PET) substrate and functionalized with 3-aminopropyl triethoxysilane (APTES), which renders the film capable of further functionalization with proteins for yielding a three-dimensional cell culture or co-culture platform for different applications.

Iron Oxide Films Prepared by Rapid Thermal Processing for Solar Energy Conversion

PubMed Central

Wickman, B.; Bastos Fanta, A.; Burrows, A.; Hellman, A.; Wagner, J. B.; Iandolo, B.

2017-01-01

Hematite is a promising and extensively investigated material for various photoelectrochemical (PEC) processes for energy conversion and storage, in particular for oxidation reactions. Thermal treatments during synthesis of hematite are found to affect the performance of hematite electrodes considerably. Herein, we present hematite thin films fabricated via one-step oxidation of Fe by rapid thermal processing (RTP). In particular, we investigate the effect of oxidation temperature on the PEC properties of hematite. Films prepared at 750 °C show the highest activity towards water oxidation. These films show the largest average grain size and the highest charge carrier density, as determined from electron microscopy and impedance spectroscopy analysis. We believe that the fast processing enabled by RTP makes this technique a preferred method for investigation of novel materials and architectures, potentially also on nanostructured electrodes, where retaining high surface area is crucial to maximize performance. PMID:28091573

Sol-gel zinc oxide humidity sensors integrated with a ring oscillator circuit on-a-chip.

PubMed

Yang, Ming-Zhi; Dai, Ching-Liang; Wu, Chyan-Chyi

2014-10-28

The study develops an integrated humidity microsensor fabricated using the commercial 0.18 μm complementary metal oxide semiconductor (CMOS) process. The integrated humidity sensor consists of a humidity sensor and a ring oscillator circuit on-a-chip. The humidity sensor is composed of a sensitive film and branch interdigitated electrodes. The sensitive film is zinc oxide prepared by sol-gel method. After completion of the CMOS process, the sensor requires a post-process to remove the sacrificial oxide layer and to coat the zinc oxide film on the interdigitated electrodes. The capacitance of the sensor changes when the sensitive film adsorbs water vapor. The circuit is used to convert the capacitance of the humidity sensor into the oscillation frequency output. Experimental results show that the output frequency of the sensor changes from 84.3 to 73.4 MHz at 30 °C as the humidity increases 40 to 90%RH.

Improved Electrochromic Characteristics of a Honeycomb-Structured Film Composed of NiO.

PubMed

Yang, Hyeeun; Lee, Yulhee; Kim, Dong In; Seo, Hyeon Jin; Yu, Jung-Hoon; Nam, Sang-Hun; Boo, Jin-Hyo

2018-09-01

Color changes controlled by electronic energies have been studied for many years in order to fabricate energy-efficient smart windows. Reduction and oxidization of nickel oxide under the appropriate voltage can change the color of a window. For a superior nickel oxide (NiO) electrochromic device (ECD), it is important to control the chemical and physical characteristics of the surface. In this study, we applied polystyrene bead templates to nickel oxide films to fabricate a honeycomb-structured electrochromic (EC) layer. We synthesized uniform polystyrene beads using the chemical wet method and placed them on substrates to create honeycomb-structured NiO films. Then, the EC characteristics of the nickel oxide films with a honeycomb structure were evaluated with UV-Visible and cyclic voltammetry. FE-SEM and AFM were used to measure the morphologies of the nanostructures and the efficiencies of the redox reactions related to the specific surface area.

Anodic Behaviour of High Nitrogen-Bearing Steel in PEMFC Environments

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, H.; Turner, J. A.

2008-02-01

High nitrogen-bearing stainless steels, AISI Type 201 and AL219, were investigated in simulated polymer electrolyte membrane fuel cell (PEMFC) environments to assess the use of these materials in fuel cell bipolar plate applications. Both steels exhibit better corrosion behavior than 316L steel in the same environments. Type 201 steel shows similar but lower interfacial contact resistance (ICR) than 316L, while AL219 steel shows higher ICR than 316L. X-ray photoelectron spectroscopy (XPS) analysis shows that the air-formed films on Type 201 and AL219 are composed of iron oxides, chromium oxide, and manganese oxide. Iron oxides dominate the composition of the air-formedmore » film, specially the outer layer. Chromium oxide dominates passive films. Surface film thicknesses were estimated. The results suggest that high nitrogen-bearing stainless steels are promising materials for PEMFC bipolar plates.« less

Structure-activity correlations in a nickel-borate oxygen evolution catalyst.

PubMed

Bediako, D Kwabena; Lassalle-Kaiser, Benedikt; Surendranath, Yogesh; Yano, Junko; Yachandra, Vittal K; Nocera, Daniel G

2012-04-18

An oxygen evolution catalyst that forms as a thin film from Ni(aq)(2+) solutions containing borate electrolyte (Ni-B(i)) has been studied by in situ X-ray absorption spectroscopy. A dramatic increase in catalytic rate, induced by anodic activation of the electrodeposited films, is accompanied by structure and oxidation state changes. Coulometric measurements correlated with X-ray absorption near-edge structure spectra of the active catalyst show that the nickel centers in activated films possess an average oxidation state of +3.6, indicating that a substantial proportion of nickel centers exist in a formal oxidation state of Ni(IV). In contrast, nickel centers in nonactivated films exist predominantly as Ni(III). Extended X-ray absorption fine structure reveals that activated catalyst films comprise bis-oxo/hydroxo-bridged nickel centers organized into sheets of edge-sharing NiO(6) octahedra. Diminished long-range ordering in catalyst films is due to their ostensibly amorphous nature. Nonactivated films display a similar oxidic nature but exhibit a distortion in the local coordination geometry about nickel centers, characteristic of Jahn-Teller distorted Ni(III) centers. Our findings indicate that the increase in catalytic activity of films is accompanied by changes in oxidation state and structure that are reminiscent of those observed for conversion of β-NiOOH to γ-NiOOH and consequently challenge the long-held notion that the β-NiOOH phase is a more efficient oxygen-evolving catalyst. © 2012 American Chemical Society

Assessment and prediction of joint algal toxicity of binary mixtures of graphene and ionic liquids.

PubMed

Wang, Zhuang; Zhang, Fan; Wang, Se; Peijnenburg, Willie J G M

2017-10-01

Graphene and ionic liquids (ILs) released into the environment will interact with each other. So far however, the risks associated with the concurrent exposure of biota to graphene and ILs in the environment have received little attention. The research reported here focused on observing and predicting the joint toxicity effects in the green alga Scenedesmus obliquus exposed to binary mixtures of intrinsic graphene (iG)/graphene oxide (GO) and five ILs of varying anionic and cationic types. The isolated ILs in the binary mixtures were the main contributors to toxicity. The binary GO-IL mixtures resulted in more severe joint toxicity than the binary iG-IL mixtures, irrespective of mixture ratios. The mechanism of the joint toxicity may be associated with the adsorption capability of the graphenes for the ILs, the dispersion stability of the graphenes in aquatic media, and modulation of the binary mixtures-induced oxidative stress. A toxic unit assessment showed that the graphene and IL toxicities were additive at low concentration of the mixtures but antagonistic at high concentration of the mixtures. Predictions made using the concentration addition and independent action models were close to the observed joint toxicities regardless of mixture types and mixture ratios. These findings provide new insights that are of use in the risk assessment of mixtures of engineered nanoparticles and other environmentally relevant contaminants. Copyright © 2017 Elsevier Ltd. All rights reserved.

Binary CMOS image sensor with a gate/body-tied MOSFET-type photodetector for high-speed operation

NASA Astrophysics Data System (ADS)

Choi, Byoung-Soo; Jo, Sung-Hyun; Bae, Myunghan; Kim, Sang-Hwan; Shin, Jang-Kyoo

2016-05-01

In this paper, a binary complementary metal oxide semiconductor (CMOS) image sensor with a gate/body-tied (GBT) metal oxide semiconductor field effect transistor (MOSFET)-type photodetector is presented. The sensitivity of the GBT MOSFET-type photodetector, which was fabricated using the standard CMOS 0.35-μm process, is higher than the sensitivity of the p-n junction photodiode, because the output signal of the photodetector is amplified by the MOSFET. A binary image sensor becomes more efficient when using this photodetector. Lower power consumptions and higher speeds of operation are possible, compared to the conventional image sensors using multi-bit analog to digital converters (ADCs). The frame rate of the proposed image sensor is over 2000 frames per second, which is higher than those of the conventional CMOS image sensors. The output signal of an active pixel sensor is applied to a comparator and compared with a reference level. The 1-bit output data of the binary process is determined by this level. To obtain a video signal, the 1-bit output data is stored in the memory and is read out by horizontal scanning. The proposed chip is composed of a GBT pixel array (144 × 100), binary-process circuit, vertical scanner, horizontal scanner, and readout circuit. The operation mode can be selected from between binary mode and multi-bit mode.

Three dimensional-stacked complementary thin-film transistors using n-type Al:ZnO and p-type NiO thin-film transistors.

PubMed

Lee, Ching-Ting; Chen, Chia-Chi; Lee, Hsin-Ying

2018-03-05

The three dimensional inverters were fabricated using novel complementary structure of stacked bottom n-type aluminum-doped zinc oxide (Al:ZnO) thin-film transistor and top p-type nickel oxide (NiO) thin-film transistor. When the inverter operated at the direct voltage (V DD ) of 10 V and the input voltage from 0 V to 10 V, the obtained high performances included the output swing of 9.9 V, the high noise margin of 2.7 V, and the low noise margin of 2.2 V. Furthermore, the high performances of unskenwed inverter were demonstrated by using the novel complementary structure of the stacked n-type Al:ZnO thin-film transistor and p-type nickel oxide (NiO) thin-film transistor.

Gallium oxide thin films from the AACVD of [Ga(NMe2)3]2 and donor functionalised alcohols.

PubMed

Basharat, Siama; Carmalt, Claire J; Binions, Russell; Palgrave, Robert; Parkin, Ivan P

2008-02-07

Thin films of Ga(2)O(3) have been produced from [Ga(NMe(2))(3)](2) and ROH (R = CH(2)CH(2)NMe(2), CH(CH(2)NMe(2))(2), CH(CH(3))CH(2)NMe(2), CH(2)CH(2)OMe and C(CH(3))(2)CH(2)OMe) by aerosol assisted chemical vapour deposition on glass. Transparent, unreflective films were obtained at a deposition temperature of 550 degrees C using toluene as solvent. The gallium oxide films were analyzed by Scanning electron microscopy (SEM), Raman spectroscopy, wavelength dispersive analysis of X-rays (WDX) and X-ray photoelectron spectroscopy (XPS). The gallium oxide films obtained were X-ray amorphous. Gas-sensing experiments indicated that the films showed an n-type response to ethanol at a variety of temperatures.

Modulation of strain, resistance, and capacitance of tantalum oxide film by converse piezoelectric effect

NASA Astrophysics Data System (ADS)

Jia, Yanmin; Tian, Xiangling; Si, Jianxiao; Huang, Shihua; Wu, Zheng; Zhu, Chenchen

2011-07-01

We deposited tantalum oxide film on a laminate structure composed of a Si substrate and a piezoelectric 0.72Pb(Mg1/3Nb2/3)O3-0.28PbTiO3 single crystal and achieved in situ modulation of the resistance and capacitance of the Ta2O5 film. The modulation arises from the induced lattice strain in the Ta2O5 film, which is induced by the electric-field-induced strain in the piezoelectric crystal. Under an external electric field of ˜2 kV/cm, the longitudinal gauge factor of the Ta2O5 film is ˜3300. The control of the strain using the converse piezoelectric effect may be further extended to tune the intrinsic strain of other oxide thin films.

Structural, optical and electrical characteristics of nickel oxide thin films synthesised through chemical processing method

NASA Astrophysics Data System (ADS)

Akinkuade, Shadrach; Mwankemwa, Benanrd; Nel, Jacqueline; Meyer, Walter

2018-04-01

A simple and cheap chemical deposition method was used to produce a nickel oxide (NiO) thin film on glass substrates from a solution that contained Ni2+ and monoethanolamine. Thermal treatment of the film at temperatures above 350 °C for 1 h caused decomposition of the nickel hydroxide into nickel oxide. Structural, optical and electrical properties of the film were studied using X-ray diffraction (XRD), spectrophotometry, current-voltage measurements and scanning electron microscopy (SEM). The film was found to be polycrystalline with interplanar spacing of 0.241 nm, 0.208 nm and 0.148 nm for (111), (200) and (220) planes respectively, the lattice constant a was found to be 0.417 nm. The film had a porous surface morphology, formed from a network of nanowalls of average thickness of 66.67 nm and 52.00 nm for as-deposited and annealed films respectively. Transmittance of visible light by the as-deposited film was higher and the absorption edge of the film blue-shifted after annealing. The optical band gap of the annealed film was 3.8 eV. Electrical resistivity of the film was 378 Ωm.

Properties of anodic oxides grown on a hafnium–tantalum–titanium thin film library

PubMed Central

Mardare, Andrei Ionut; Ludwig, Alfred; Savan, Alan; Hassel, Achim Walter

2014-01-01

A ternary thin film combinatorial materials library of the valve metal system Hf–Ta–Ti obtained by co-sputtering was studied. The microstructural and crystallographic analysis of the obtained compositions revealed a crystalline and textured surface, with the exception of compositions with Ta concentration above 48 at.% which are amorphous and show a flat surface. Electrochemical anodization of the composition spread thin films was used for analysing the growth of the mixed surface oxides. Oxide formation factors, obtained from the potentiodynamic anodization curves, as well as the dielectric constants and electrical resistances, obtained from electrochemical impedance spectroscopy, were mapped along two dimensions of the library using a scanning droplet cell microscope. The semiconducting properties of the anodic oxides were mapped using Mott–Schottky analysis. The degree of oxide mixing was analysed qualitatively using x-ray photoelectron spectroscopy depth profiling. A quantitative analysis of the surface oxides was performed and correlated to the as-deposited metal thin film compositions. In the concurrent transport of the three metal cations during oxide growth a clear speed order of Ti > Hf > Ta was proven. PMID:27877648

Surface characteristics and bioactivity of oxide film on titanium metal formed by thermal oxidation.

PubMed

Park, Yeong-Joon; Song, Ho-Jun; Kim, In; Yang, Hong-So

2007-04-01

In this study, we characterized the surface of oxide film formed on titanium metal through the use of thermal treatment and investigated the effect of surface characteristics on the bioactivity of titanium. The as-received sample group was prepared by polishing and cleaning CP-Ti as a control group, and thermally oxidized sample groups were prepared by heat treating at 530, 600, 700, 800, 900, and 1000 degrees C respectively. Micro-morphology, crystalline structure, chemical composition, and binding state were evaluated using FE-SEM, XRD, and XPS. The bioactivity of sample groups was investigated by observing the degree of calcium phosphate formation from immersion testing in MEM. The surface characterization tests showed that hydroxyl group content in titanium oxide film was increased, as the density of titanium atoms was high and the surface area was large. In MEM immersion test, initial calcium phosphate formation was dependent upon the thickness of titanium oxide, and resultant calcium phosphate formation depended on the content of the hydroxyl group of the titanium oxide film surface.

Physical properties of spin-valve films grown on naturally oxidized metal nano-oxide surfaces

NASA Astrophysics Data System (ADS)

Mao, Ming; Cerjan, Charlie; Kools, Jacques

2002-05-01

The physical properties of spin-valve films NiFe 25 Å/CoFe 10 Å/Cu(tCu)/CoFe 30 Å/IrMn 70 Å/Ta 20 Å with graded Cu layer thickness (tCu=18-45 Å) grown on the surface of metal nano-oxide layers (NOLs) were studied. The NOLs were formed from ultrathin Al, Cr, Cu, Nb, Ta, CoFe, NiFe, and NiFeCr layers by natural oxidation. The growth of the spin-valve films on NOLs has led to an enhancement in giant magnetoresistance value by up to 48%. A corresponding reduction in minimum film resistance by over 10% confirms that this enhancement originates from an increase in the mean free path of spin-polarized electrons due to the resultant specular reflection at the nano-oxide surfaces. A wide spectrum of oscillatory interlayer exchange coupling dependence on tCu for these NOL-bearing films suggests that a specular nano-oxide surface does not necessarily result in a smoother multilayer structure. The observation of an enhanced exchange biasing among these spin-valve films appears in contradiction to the observed deterioration of their crystallographic quality. As an important application, TaOx, CrOx, and NbOx could be employed as an alternative to AlOx as the barrier layer for magnetic tunnel junctions.

Multilayered films of cobalt oxyhydroxide nanowires/manganese oxide nanosheets for electrochemical capacitor

NASA Astrophysics Data System (ADS)

Zheng, Huajun; Tang, Fengqiu; Lim, Melvin; Mukherji, Aniruddh; Yan, Xiaoxia; Wang, Lianzhou; (Max) Lu, Gao Qing

Multilayered films of cobalt oxyhydroxide nanowires (CoOOHNW) and exfoliated manganese oxide nanosheet (MONS) are fabricated by potentiostatic deposition and electrostatic self-assembly on indium-tin oxide coated glass substrates. The morphology and chemical composition of these films are characterized by scanning electron microscopy (SEM) and X-ray photoelectron spectra (XPS) and the potential application as electrochemical supercapacitors are investigated using cyclic voltammetry and charge-discharge measurements. These ITO/CoOOHNW/MONS multilayered film electrodes exhibit excellent electrochemical capacitance properties, including high specific capacitance (507 F g -1) and long cycling durability (less 2% capacity loss after 5000 charge/discharge cycles). These characteristics indicate that these newly developed films may find important application for electrochemical capacitors.

Fabrication and characterization of highly transparent and conductive indium tin oxide films made with different solution-based methods

NASA Astrophysics Data System (ADS)

Xia, N.; Gerhardt, R. A.

2016-11-01

Solution-based fabrication methods can greatly reduce the cost and broaden the applications of transparent conducting oxides films, such as indium tin oxide (ITO) films. In this paper, we report on ITO films fabricated by spin coating methods on glass substrates with two different ITO sources: (1) a commercial ITO nanopowder water dispersion and (2) a sol-gel ITO solution. A simple and fast air annealing process was used to treat as-coated ITO films on a controlled temperature hot plate. Thermogravimetric analysis and x-ray diffraction showed that highly crystalline ITO films were formed after the annealing steps. The final ITO films had a good combination of optical properties and electrical properties, especially for films made from five layers of sol-gel ITO (92.66% transmittance and 8.7 × 10-3 Ω cm resistivity). The surface morphology and conducting network on the ITO films were characterized by non-contact and current atomic force microscopy. It was found that conducting paths were only partially connected for the nanoparticle ITO dispersion films, whereas the sol-gel ITO films had a more uniformly distributed conducting network on the surface. We also used the sol-gel ITO films to fabricate a simple liquid crystal display (LCD) device to demonstrate the excellent properties of our films.

Fabrication of eco-friendly PNP transistor using RF magnetron sputtering

NASA Astrophysics Data System (ADS)

Kumar, B. Santhosh; Harinee, N.; Purvaja, K.; Shanker, N. Praveen; Manikandan, M.; Aparnadevi, N.; Mukilraj, T.; Venkateswaran, C.

2018-05-01

An effort has been made to fabricate a thin film transistor using eco-friendly oxide semiconductor materials. Oxide semiconductor materials are cost - effective, thermally and chemically stable with high electron/hole mobility. Copper (II) oxide is a p-type semiconductor and zinc oxide is an n-type semiconductor. A pnp thin film transistor was fabricated using RF magnetron sputtering. The films deposited have been subjected to structural characterization using AFM. I-V characterization of the fabricated device, Ag/CuO/ZnO/CuO/Ag, confirms transistor behaviour. The mechanism of electron/hole transport of the device is discussed below.

Determination of oxygen diffusion kinetics during thin film ruthenium oxidation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Coloma Ribera, R., E-mail: r.colomaribera@utwente.nl; Kruijs, R. W. E. van de; Yakshin, A. E.

2015-08-07

In situ X-ray reflectivity was used to reveal oxygen diffusion kinetics for thermal oxidation of polycrystalline ruthenium thin films and accurate determination of activation energies for this process. Diffusion rates in nanometer thin RuO{sub 2} films were found to show Arrhenius behaviour. However, a gradual decrease in diffusion rates was observed with oxide growth, with the activation energy increasing from about 2.1 to 2.4 eV. Further exploration of the Arrhenius pre-exponential factor for diffusion process revealed that oxidation of polycrystalline ruthenium joins the class of materials that obey the Meyer-Neldel rule.

Study on the influences of reduction temperature on nickel-yttria-stabilized zirconia solid oxide fuel cell anode using nickel oxide-film electrode

NASA Astrophysics Data System (ADS)

Jiao, Zhenjun; Ueno, Ai; Suzuki, Yuji; Shikazono, Naoki

2016-10-01

In this study, the reduction processes of nickel oxide at different temperatures were investigated using nickel-film anode to study the influences of reduction temperature on the initial performances and stability of nickel-yttria-stabilized zirconia anode. Compared to conventional nickel-yttria-stabilized zirconia composite cermet anode, nickel-film anode has the advantage of direct observation at nickel-yttria-stabilized zirconia interface. The microstructural changes were characterized by scanning electron microscopy. The reduction process of nickel oxide is considered to be determined by the competition between the mechanisms of volume reduction in nickel oxide-nickel reaction and nickel sintering. Electrochemical impedance spectroscopy was applied to analyze the time variation of the nickel-film anode electrochemical characteristics. The anode performances and microstructural changes before and after 100 hours discharging and open circuit operations were analyzed. The degradation of nickel-film anode is considered to be determined by the co-effect between the nickel sintering and the change of nickel-yttria-stabilized zirconia interface bonding condition.

Trends in the thermodynamic stability of ultrathin supported oxide films

DOE PAGES

Plessow, Philipp N.; Bajdich, Michal; Greene, Joshua; ...

2016-05-05

The formation of thin oxide films on metal supports is an important phenomenon, especially in the context of strong metal support interaction (SMSI). Computational predictions of the stability of these films are hampered by their structural complexity and a varying lattice mismatch with different supports. In this study, we report a large combination of supports and ultrathin oxide films studied with density functional theory (DFT). Trends in stability are investigated through a descriptor-based analysis. Since the studied films are bound to the support exclusively through metal–metal interaction, the adsorption energy of the oxide-constituting metal atom can be expected to bemore » a reasonable descriptor for the stability of the overlayers. If the same supercell is used for all supports, the overlayers experience different amounts of stress. Using supercells with small lattice mismatch for each system leads to significantly improved scaling relations for the stability of the overlayers. Finally, this approach works well for the studied systems and therefore allows the descriptor-based exploration of the thermodynamic stability of supported thin oxide layers.« less

Comparative study of the native oxide on 316L stainless steel by XPS and ToF-SIMS

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tardio, Sabrina, E-mail: s.tardio@surrey.ac.uk; Abel, Marie-Laure; Castle, James E.

2015-09-15

The very thin native oxide film on stainless steel, of the order of 2 nm, is known to be readily modified by immersion in aqueous media. In this paper, X-ray photoelectron spectroscopy (XPS) and time of flight secondary ions mass spectrometry are employed to investigate the nature of the air-formed film and modification after water emersion. The film is described in terms of oxide, hydroxide, and water content. The preferential dissolution of iron is shown to occur on immersion. It is shown that a water absorbed layer and a hydroxide layer are present above the oxide-like passive film. The concentrations ofmore » water and hydroxide appear to be higher in the case of exposure to water. A secure method for the peak fitting of Fe2p and Cr2p XPS spectra of such films on their metallic substrates is described. The importance of XPS survey spectra is underlined and the feasibility of C{sub 60}{sup +} SIMS depth profiling of a thin oxide layer is shown.« less

Stable solar-driven oxidation of water by semiconducting photoanodes protected by transparent catalytic nickel oxide films.

PubMed

Sun, Ke; Saadi, Fadl H; Lichterman, Michael F; Hale, William G; Wang, Hsin-Ping; Zhou, Xinghao; Plymale, Noah T; Omelchenko, Stefan T; He, Jr-Hau; Papadantonakis, Kimberly M; Brunschwig, Bruce S; Lewis, Nathan S

2015-03-24

Reactively sputtered nickel oxide (NiOx) films provide transparent, antireflective, electrically conductive, chemically stable coatings that also are highly active electrocatalysts for the oxidation of water to O2(g). These NiOx coatings provide protective layers on a variety of technologically important semiconducting photoanodes, including textured crystalline Si passivated by amorphous silicon, crystalline n-type cadmium telluride, and hydrogenated amorphous silicon. Under anodic operation in 1.0 M aqueous potassium hydroxide (pH 14) in the presence of simulated sunlight, the NiOx films stabilized all of these self-passivating, high-efficiency semiconducting photoelectrodes for >100 h of sustained, quantitative solar-driven oxidation of water to O2(g).

Binary Synergy Strengthening and Toughening of Bio-Inspired Nacre-like Graphene Oxide/Sodium Alginate Composite Paper.

PubMed

Chen, Ke; Shi, Bin; Yue, Yonghai; Qi, Juanjuan; Guo, Lin

2015-08-25

A crucial requirement for most engineering materials is the excellent balance of strength and toughness. By mimicking the hybrid hierarchical structure in nacre, a kind of nacre-like paper based on binary hybrid graphene oxide (GO)/sodium alginate (SA) building blocks has been successfully fabricated. Systematic evaluation for the mechanical property in different (dry/wet) environment/after thermal annealing shows a perfect combination of high strength and toughness. Both of the parameters are nearly many-times higher than those of similar materials because of the synergistic strengthening/toughening enhancement from the binary GO/SA hybrids. The successful fabrication route offers an excellent approach to design advanced strong integrated nacre-like composite materials, which can be applied in tissue engineering, protection, aerospace, and permeable membranes for separation and delivery.

Influence of corrosive solutions on microhardness and chemistry of magnesium oxide /001/ surfaces

NASA Technical Reports Server (NTRS)

Ishigaki, H.; Miyoshi, K.; Buckley, D. H.

1982-01-01

X-ray photoelectron spectroscopy analyses and hardness experiments were conducted on cleaved magnesium oxide /001/ surfaces. The magnesium oxide bulk crystals were cleaved to specimen size along the /001/ surface, and indentations were made on the cleaved surface in corrosive solutions containing HCl, NaOH, or HNO3 and in water without exposing the specimen to any other environment. The results indicated that chloride (such as MgCl2) and sodium films are formed on the magnesium oxide surface as a result of interactions between an HCl-containing solution and a cleaved magnesium oxide surface. The chloride films soften the magnesium oxide surface. In this case microhardness is strongly influenced by the pH value of the solution. The lower the pH, the lower the microhardness. Sodium films, which are formed on the magnesium oxide surface exposed to an NaOH containing solution, do not soften the magnesium oxide surface.

Electrical and structural characterization of IZO (indium oxide-zinc oxide) thin films for device applications

NASA Astrophysics Data System (ADS)

Yaglioglu, Burag

Materials for oxide-based transparent electronics have been recently reported in the literature. These materials include various amorphous and crystalline compounds based on multi-component oxides and many of them offer useful combinations of transparency, controllable carrier concentrations, and reasonable n-carrier mobility. In this thesis, the properties of amorphous and crystalline In2O3-10wt%ZnO, IZO, thin films were investigated for their potential use in oxide electronics. The room temperature deposition of this material using DC magnetron sputtering results in the formation of amorphous films. Annealing amorphous IZO films at 500°C in air produces a previously unknown crystalline compound. Using electron diffraction experiments, it is reported that the crystal structure of this compound is based on the high-pressure rhombohedral phase of In2O3. Electrical properties of different phases of IZO were explored and it was concluded that amorphous films offer most promising characteristics for device applications. Therefore, thin film transistors (TFT) were fabricated based on amorphous IZO films where both the channel and metallization layers were deposited from the same target. The carrier densities in the channel and source-drain layers were adjusted by changing the oxygen content in the sputter chamber during deposition. The resulting transistors operate as depletion mode n-channel field effect devices with high saturation mobilities.

Preparation of bioactive titania films on titanium metal via anodic oxidation.

PubMed

Cui, X; Kim, H-M; Kawashita, M; Wang, L; Xiong, T; Kokubo, T; Nakamura, T

2009-01-01

To research the crystal structure and surface morphology of anodic films on titanium metal in different electrolytes under various electrochemical conditions and investigate the effect of the crystal structure of the oxide films on apatite-forming ability in simulated body fluid (SBF). Titanium oxide films were prepared using an anodic oxidation method on the surface of titanium metal in four different electrolytes: sulfuric acid, acetic acid, phosphoric acid and sodium sulfate solutions with different voltages for 1 min at room temperature. Anodic films that consisted of rutile and/or anatase phases with porous structures were formed on titanium metal after anodizing in H(2)SO(4) and Na(2)SO(4) electrolytes, while amorphous titania films were produced after anodizing in CH(3)COOH and H(3)PO(4) electrolytes. Titanium metal with the anatase and/or rutile crystal structure films showed excellent apatite-forming ability and produced a compact apatite layer covering all the surface of titanium after soaking in SBF for 7d, but titanium metal with amorphous titania layers was not able to induce apatite formation. The resultant apatite layer formed on titanium metal in SBF could enhance the bonding strength between living tissue and the implant. Anodic oxidation is believed to be an effective method for preparing bioactive titanium metal as an artificial bone substitute even under load-bearing conditions.

Electrically Variable Resistive Memory Devices

NASA Technical Reports Server (NTRS)

Liu, Shangqing; Wu, Nai-Juan; Ignatiev, Alex; Charlson, E. J.

2010-01-01

Nonvolatile electronic memory devices that store data in the form of electrical- resistance values, and memory circuits based on such devices, have been invented. These devices and circuits exploit an electrically-variable-resistance phenomenon that occurs in thin films of certain oxides that exhibit the colossal magnetoresistive (CMR) effect. It is worth emphasizing that, as stated in the immediately preceding article, these devices function at room temperature and do not depend on externally applied magnetic fields. A device of this type is basically a thin film resistor: it consists of a thin film of a CMR material located between, and in contact with, two electrical conductors. The application of a short-duration, low-voltage current pulse via the terminals changes the electrical resistance of the film. The amount of the change in resistance depends on the size of the pulse. The direction of change (increase or decrease of resistance) depends on the polarity of the pulse. Hence, a datum can be written (or a prior datum overwritten) in the memory device by applying a pulse of size and polarity tailored to set the resistance at a value that represents a specific numerical value. To read the datum, one applies a smaller pulse - one that is large enough to enable accurate measurement of resistance, but small enough so as not to change the resistance. In writing, the resistance can be set to any value within the dynamic range of the CMR film. Typically, the value would be one of several discrete resistance values that represent logic levels or digits. Because the number of levels can exceed 2, a memory device of this type is not limited to binary data. Like other memory devices, devices of this type can be incorporated into a memory integrated circuit by laying them out on a substrate in rows and columns, along with row and column conductors for electrically addressing them individually or collectively.

Study of annealing time on sol-gel indium tin oxide films on glass

DOE Office of Scientific and Technical Information (OSTI.GOV)

De, A.; Biswas, P.K.; Manara, J.

2007-07-15

Indium and tin salt-based precursors maintaining In:Sn atomic ratio as 90:10 were utilized for the development of sol-gel dip coated indium tin oxide films (ITO) on SiO{sub 2} coated ({approx} 200 nm thickness) soda lime silica glass substrate. The gel films were initially cured in air at {approx} 450 deg. C to obtain oxide films of physical thickness {approx} 250 nm. These were then annealed in 95% Ar-5% H{sub 2} atmosphere at {approx} 500 deg. C. The annealing time was varied from 0.5 h to 5 h. Variation of annealing time did not show any considerable change of transmittance inmore » the visible region. Thermal emissivity ({epsilon} {sub d}, 0.67-0.79) of the films were evaluated from their hemispherical spectral reflectance. These passed through a minima with increasing annealing time as the reflectivity of the films in the mid-IR passed through a maxima. The microstructure of the films revealed systematic growth of the ITO grains. XRD and XPS studies revealed the presence of both In and Sn metals in addition to the metal oxides. The energy dispersive X-ray (EDX) analysis showed little lowering of tin content in the films with increasing annealing time.« less

Electrochemical preparation of poly(methylene blue)/graphene nanocomposite thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Erçarıkcı, Elif; Dağcı, Kader; Topçu, Ezgi

2014-07-01

Highlights: • Poly(MB)/graphene thin films are prepared by a simple electrochemical approach. • Graphene layers in the film show a broad band in visible region of absorbance spectra. • Morphology of composite films indicates both disordered and ordered regions. • XRD reveals that nanocomposite films include rGO layers after electropolymerization process. • Chemically prepared graphene is better than electrochemically prepared graphene for electrooxidation of nitrite. - Abstract: Poly(methylene blue)/graphene nanocomposite thin films were prepared by electropolymerization of methylene blue in the presence of graphene which have been synthesized by two different methods of a chemical oxidation process and an electrochemicalmore » approach. Synthesized nanocomposite thin films were characterized by using cyclic voltammetry, UV–vis. absorption spectroscopy, powder X-ray diffraction, and scanning tunneling microscopy techniques. Electrocatalytical properties of prepared poly(methylene blue)/graphene nanocomposite films were compared toward electrochemical oxidation of nitrite. Under optimized conditions, electrocatalytical effect of nanocomposite films of chemically prepared graphene through electrochemical oxidation of nitrite was better than that of electrochemically prepared graphene.« less

Electrical and optical properties of molybdenum doped zinc oxide films prepared by reactive RF magnetron sputtering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Reddy, R. Subba; Sreedhar, A.; Uthanna, S., E-mail: uthanna@rediffmail.com

Molybdenum doped zinc oxide (MZO) films were deposited on to glass substrates held at temperatures in the range from 303 to 673 K by reactive RF magnetron sputtering method. The chemical composition, crystallographic structure and surface morphology, electrical and optical properties of the films were determined. The films contained the molybdenum of 2.7 at. % in ZnO. The films deposited at 303 K were of X-ray amorphous. The films formed at 473 K were of nanocrystalline in nature with wurtzite structure. The crystallite size of the films was increased with the increase of substrate temperature. The optical transmittance of the films was inmore » the visible range was 80–85%. The molybdenum (2.7 at %) doped zinc oxide films deposited at substrate temperature of 573 K were of nanocrystalline with electrical resistivity of 7.2×10{sup −3} Ωcm, optical transmittance of 85 %, optical band gap of 3.35 eV and figure of merit 30.6 Ω{sup −1}cm{sup −1}.« less

Low Temperature Synthesis of Fluorine-Doped Tin Oxide Transparent Conducting Thin Film by Spray Pyrolysis Deposition.

PubMed

Ko, Eun-Byul; Choi, Jae-Seok; Jung, Hyunsung; Choi, Sung-Churl; Kim, Chang-Yeoul

2016-02-01

Transparent conducting oxide (TCO) is widely used for the application of flat panel display like liquid crystal displays and plasma display panel. It is also applied in the field of touch panel, solar cell electrode, low-emissivity glass, defrost window, and anti-static material. Fluorine-doped tin oxide (FTO) thin films were fabricated by spray pyrolysis of ethanol-added FTO precursor solutions. FTO thin film by spray pyrolysis is very much investigated and normally formed at high temperature, about 500 degrees C. However, these days, flexible electronics draw many attentions in the field of IT industry and the research for flexible transparent conducting thin film is also required. In the industrial field, indium-tin oxide (ITO) film on polymer substrate is widely used for touch panel and displays. In this study, we investigated the possibility of FTO thin film formation at relatively low temperature of 250 degrees C. We found out that the control of volume of input precursor and exhaust gases could make it possible to form FTO thin film with a relatively low electrical resistance, less than 100 Ohm/sq and high optical transmittance about 88%.

Large-Grain Tin-Rich Perovskite Films for Efficient Solar Cells via Metal Alloying Technique.

PubMed

Tavakoli, Mohammad Mahdi; Zakeeruddin, Shaik Mohammed; Grätzel, Michael; Fan, Zhiyong

2018-03-01

Fast research progress on lead halide perovskite solar cells has been achieved in the past a few years. However, the presence of lead (Pb) in perovskite composition as a toxic element still remains a major issue for large-scale deployment. In this work, a novel and facile technique is presented to fabricate tin (Sn)-rich perovskite film using metal precursors and an alloying technique. Herein, the perovskite films are formed as a result of the reaction between Sn/Pb binary alloy metal precursors and methylammonium iodide (MAI) vapor in a chemical vapor deposition process carried out at 185 °C. It is found that in this approach the Pb/Sn precursors are first converted to (Pb/Sn)I 2 and further reaction with MAI vapor leads to the formation of perovskite films. By using Pb-Sn eutectic alloy, perovskite films with large grain sizes up to 5 µm can be grown directly from liquid phase metal. Consequently, using an alloying technique and this unique growth mechanism, a less-toxic and efficient perovskite solar cell with a power conversion efficiency (PCE) of 14.04% is demonstrated, while pure Sn and Pb perovskite solar cells prepared in this manner yield PCEs of 4.62% and 14.21%, respectively. It is found that this alloying technique can open up a new direction to further explore different alloy systems (binary or ternary alloys) with even lower melting point. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Conduction mechanism change with transport oxide layer thickness in oxide hetero-interface diode

NASA Astrophysics Data System (ADS)

Nam, Bu-il; Park, Jong Seo; Lim, Keon-Hee; Ahn, Yong-keon; Lee, Jinwon; Park, Jun-woo; Cho, Nam-Kwang; Lee, Donggun; Lee, Han-Bo-Ram; Kim, Youn Sang

2017-07-01

An effective and facile strategy is proposed to demonstrate an engineered oxide hetero-interface of a thin film diode with a high current density and low operating voltage. The electrical characteristics of an oxide hetero-interface thin film diode are governed by two theoretical models: the space charge-limited current model and the Fowler-Nordheim (F-N) tunneling model. Interestingly, the dominant mechanism strongly depends on the insulator thickness, and the mechanism change occurs at a critical thickness. This paper shows that conduction mechanisms of oxide hetero-interface thin film diodes depend on thicknesses of transport oxide layers and that current densities of these can be exponentially increased through quantum tunneling in the diodes with the thicknesses less than 10 nm. These oxide hetero-interface diodes have great potential for low-powered transparent nanoscale applications.

High Stability Performance of Quinary Indium Gallium Zinc Aluminum Oxide Films and Thin-Film Transistors Deposited Using Vapor Cooling Condensation Method

NASA Astrophysics Data System (ADS)

Lin, Yung-Hao; Lee, Ching-Ting

2017-08-01

High-quality indium gallium zinc aluminum oxide (IGZAO) thin films with various Al contents have been deposited using the vapor cooling condensation method. The electron mobility of the IGZAO films was improved by 89.4% on adding Al cation to IGZO film. The change in the electron concentration and mobility of the IGZAO films was 7.3% and 7.0%, respectively, when the temperature was changed from 300 K to 225 K. These experimental results confirm the high performance and stability of the IGZAO films. The performance stability mechanisms of IGZAO thin-film transistors (TFTs) were investigated in comparison with IGZO TFTs.

Limits of ZnO Electrodeposition in Mesoporous Tin Doped Indium Oxide Films in View of Application in Dye-Sensitized Solar Cells

PubMed Central

Dunkel, Christian; von Graberg, Till; Smarsly, Bernd M.; Oekermann, Torsten; Wark, Michael

2014-01-01

Well-ordered 3D mesoporous indium tin oxide (ITO) films obtained by a templated sol-gel route are discussed as conductive porous current collectors. This paper explores the use of such films modified by electrochemical deposition of zinc oxide (ZnO) on the pore walls to improve the electron transport in dye-sensitized solar cells (DSSCs). Mesoporous ITO film were dip-coated with pore sizes of 20–25 nm and 40–45 nm employing novel poly(isobutylene)-b-poly(ethylene oxide) block copolymers as structure-directors. After electrochemical deposition of ZnO and sensitization with the indoline dye D149 the films were tested as photoanodes in DSSCs. Short ZnO deposition times led to strong back reaction of photogenerated electrons from non-covered ITO to the electrolyte. ITO films with larger pores enabled longer ZnO deposition times before pore blocking occurred, resulting in higher efficiencies, which could be further increased by using thicker ITO films consisting of five layers, but were still lower compared to nanoporous ZnO films electrodeposited on flat ITO. The major factors that currently limit the application are the still low thickness of the mesoporous ITO films, too small pore sizes and non-ideal geometries that do not allow obtaining full coverage of the ITO surface with ZnO before pore blocking occurs. PMID:28788618

Interfacial Engineering of Nanoporous Architectures in Ga2O3 Film toward Self-Aligned Tubular Nanostructure with an Enhanced Photocatalytic Activity on Water Splitting.

PubMed

Shrestha, Nabeen K; Bui, Hoa Thi; Lee, Taegweon; Noh, Yong-Young

2018-04-17

The present work demonstrates the formation of self-aligned nanoporous architecture of gallium oxide by anodization of gallium metal film controlled at -15 °C in aqueous electrolyte consisting of phosphoric acid. SEM examination of the anodized film reveals that by adding ethylene glycol to the electrolyte and optimizing the ratio of phosphoric acid and water, chemical etching at the oxide/electrolyte interfaces can be controlled, leading to the formation of aligned nanotubular oxide structures with closed bottom. XPS analysis confirms the chemical composition of the oxide film as Ga 2 O 3 . Further, XRD and SAED examination reveals that the as-synthesized nanotubular structure is amorphous, and can be crystallized to β-Ga 2 O 3 phase by annealing the film at 600 °C. The nanotubular structured film, when used as photoanode for photoelectrochemical splitting of water, achieved a higher photocurrent of about two folds than that of the nanoporous film, demonstrating the rewarding effect of the nanotubular structure. In addition, the work also demonstrates the formation of highly organized nonporous Ga 2 O 3 structure on a nonconducting glass substrate coated with thin film of Ga-metal, highlighting that the current approach can be extended for the formation of self-organized nanoporous Ga 2 O 3 thin film even on nonconducting flexible substrates.

Analysis of amorphous indium-gallium-zinc-oxide thin-film transistor contact metal using Pilling-Bedworth theory and a variable capacitance diode model

NASA Astrophysics Data System (ADS)

Kiani, Ahmed; Hasko, David G.; Milne, William I.; Flewitt, Andrew J.

2013-04-01

It is widely reported that threshold voltage and on-state current of amorphous indium-gallium-zinc-oxide bottom-gate thin-film transistors are strongly influenced by the choice of source/drain contact metal. Electrical characterisation of thin-film transistors indicates that the electrical properties depend on the type and thickness of the metal(s) used. Electron transport mechanisms and possibilities for control of the defect state density are discussed. Pilling-Bedworth theory for metal oxidation explains the interaction between contact metal and amorphous indium-gallium-zinc-oxide, which leads to significant trap formation. Charge trapping within these states leads to variable capacitance diode-like behavior and is shown to explain the thin-film transistor operation.

A zinc oxide nanorod ammonia microsensor integrated with a readout circuit on-a-chip.

PubMed

Yang, Ming-Zhi; Dai, Ching-Liang; Wu, Chyan-Chyi

2011-01-01

A zinc oxide nanorod ammonia microsensor integrated with a readout circuit on-a-chip fabricated using the commercial 0.35 μm complementary metal oxide semiconductor (CMOS) process was investigated. The structure of the ammonia sensor is composed of a sensitive film and polysilicon electrodes. The ammonia sensor requires a post-process to etch the sacrificial layer, and to coat the sensitive film on the polysilicon electrodes. The sensitive film that is prepared by a hydrothermal method is made of zinc oxide. The sensor resistance changes when the sensitive film adsorbs or desorbs ammonia gas. The readout circuit is used to convert the sensor resistance into the voltage output. Experiments show that the ammonia sensor has a sensitivity of about 1.5 mV/ppm at room temperature.

Density gradient in SiO 2 films on silicon as revealed by positron annihilation spectroscopy

NASA Astrophysics Data System (ADS)

Revesz, A. G.; Anwand, W.; Brauer, G.; Hughes, H. L.; Skorupa, W.

2002-06-01

Positron annihilation spectroscopy of thermally grown and deposited SiO 2 films on silicon shows in a non-destructive manner that these films have a gradient in their density. The gradient is most pronounced for the oxide grown in dry oxygen. Oxidation in water-containing ambient results in an oxide with reduced gradient, similarly to the gradient in the deposited oxide. These observations are in accordance with earlier optical and other studies using stepwise etching or a set of samples of varying thickness. The effective oxygen charge, which is very likely one of the reasons for the difference in the W parameters of silica glass and quartz crystal, could be even higher at some localized configurations in the SiO 2 films resulting in increased positron trapping.

Structural and morphological properties of mesoporous carbon coated molybdenum oxide films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dayal, Saurabh, E-mail: saurabhdayal153@gmail.com; Kumar, C. Sasi, E-mail: csasimv@gmail.com

2016-05-06

In the present study, we report the structural and morphological properties of mesoporous carbon coated molybdenum oxide films. The deposition of films was carried out in a two-step process, the first step involves deposition of molybdenum and carbon bilayer thin films using DC magnetron sputtering. In the second step the sample was ex-situ annealed in a muffle furnace at different temperatures (400°C to 600°C) and air cooled in the ambient atmosphere. The formation of the meso-porous carbon clusters on molybdenum oxide during the cooling step was investigated using FESEM and AFM techniques. The structural details were explored using XRD. Themore » meso-porous carbon were found growing over molybdenum oxide layer as a result of segregation phenomena.« less

Effects of oxidation potential and retention time on electrochromic stability of poly (3-hexyl thiophene) films

NASA Astrophysics Data System (ADS)

Kim, Tae-Ho; Hyun Song, Seok; Kim, Hyo-Jae; Oh, Seong-Hyeon; Han, Song-Yi; Kim, Goung; Nah, Yoon-Chae

2018-06-01

Herein, we report the effects of applied voltage on the electrochromic (EC) stability of poly(3-hexylthiophene) (P3HT) films during EC reactions. The transmittance difference and cycling stability of these films were monitored to optimize the oxidation voltage, and their chemical compositions were analyzed by X-ray photoelectron spectroscopy after long-term electrochemical cycling. High oxidation voltages increased the color contrast of P3HT films but decreased their cycling stability due to facilitating chemical degradation. Furthermore, at an optimized oxidation voltage, the retention time during potential pulsing was adjusted utilizing the optical memory of P3HT, revealing that the decreased voltage application time reduced power consumption by 9.6% and enhanced EC stability without loss of color contrast.

Effect of surface state on the oxidation behavior of welded 308L in simulated nominal primary water of PWR

NASA Astrophysics Data System (ADS)

Ming, Hongliang; Zhang, Zhiming; Wang, Jiazhen; Zhu, Ruolin; Ding, Jie; Wang, Jianqiu; Han, En-Hou; Ke, Wei

2015-05-01

The oxidation behavior of 308L weld metal (WM) with different surface state in the simulated nominal primary water of pressurized water reactor (PWR) was studied by scanning electron microscopy (SEM) equipped with energy dispersive X-ray spectroscopy (EDS), X-ray diffraction (XRD) analyzer and X-ray photoelectron spectroscopy (XPS). After 480 h immersion, a duplex oxide film composed of a Fe-rich outer layer (Fe3O4, Fe2O3 and a small amount of NiFe2O4, Ni(OH)2, Cr(OH)3 and (Ni, Fe)Cr2O4) and a Cr-rich inner layer (FeCr2O4 and NiCr2O4) can be formed on the 308L WM samples with different surface state. The surface state has no influence on the phase composition of the oxide films but obviously affects the thickness of the oxide films and the morphology of the oxides (number & size). With increasing the density of dislocations and subgrain boundaries in the cold-worked superficial layer, the thickness of the oxide film, the number and size of the oxides decrease.

Note: Durability analysis of optical fiber hydrogen sensor based on Pd-Y alloy film.

PubMed

Huang, Peng-cheng; Chen, You-ping; Zhang, Gang; Song, Han; Liu, Yi

2016-02-01

The Pd-Y alloy sensing film has an excellent property for hydrogen detection, but just for one month, the sensing film's property decreases seriously. To study the failure of the sensing film, the XPS spectra analysis was used to explore the chemical content of the Pd-Y alloy film, and analysis results demonstrate that the yttrium was oxidized. The paper presented that such an oxidized process was the potential reason of the failure of the sensing film. By understanding the reason of the failure of the sensing film better, we could improve the manufacturing process to enhance the property of hydrogen sensor.

Preparation of Zinc Oxide (ZnO) Thin Film as Transparent Conductive Oxide (TCO) from Zinc Complex Compound on Thin Film Solar Cells: A Study of O2 Effect on Annealing Process

NASA Astrophysics Data System (ADS)

Muslih, E. Y.; Kim, K. H.

2017-07-01

Zinc oxide (ZnO) thin film as a transparent conductive oxide (TCO) for thin film solar cell application was successfully prepared through two step preparations which consisted of deposition by spin coating at 2000 rpm for 10 second and followed by annealing at 500 °C for 2 hours under O2 and ambient atmosphere. Zinc acetate dehydrate was used as a precursor which dissolved in ethanol and acetone (1:1 mol) mixture in order to make a zinc complex compound. In this work, we reported the O2 effect, reaction mechanism, structure, morphology, optical and electrical properties. ZnO thin film in this work shows a single phase of wurtzite, with n-type semiconductor and has band gap, carrier concentration, mobility, and resistivity as 3.18 eV, 1.21 × 10-19cm3, 11 cm2/Vs, 2.35 × 10-3 Ωcm respectively which is suitable for TCO at thin film solar cell.

Effect of nitrogen doping on structural, morphological, optical and electrical properties of radio frequency magnetron sputtered zinc oxide thin films

NASA Astrophysics Data System (ADS)

Perumal, R.; Hassan, Z.

2016-06-01

Zinc oxide receives remarkable attention due to its several attractive physical properties. Zinc oxide thin films doped with nitrogen were grown by employing RF magnetron sputtering method at room temperature. Doping was accomplished in gaseous medium by mixing high purity nitrogen gas along with argon sputtering gas. Structural studies confirmed the high crystalline nature with c-axis oriented growth of the nitrogen doped zinc oxide thin films. The tensile strain was developed due to the incorporation of the nitrogen into the ZnO crystal lattice. Surface roughness of the grown films was found to be decreased with increasing doping level was identified through atomic force microscope analysis. The presenting phonon modes of each film were confirmed through FTIR spectral analysis. The increasing doping level leads towards red-shifting of the cut-off wavelength due to decrement of the band gap was identified through UV-vis spectroscopy. All the doped films exhibited p-type conductivity was ascertained using Hall measurements and the obtained results were presented.

Avoiding polar catastrophe in the growth of polarly orientated nickel perovskite thin films by reactive oxide molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Yang, H. F.; Liu, Z. T.; Fan, C. C.; Yao, Q.; Xiang, P.; Zhang, K. L.; Li, M. Y.; Liu, J. S.; Shen, D. W.

2016-08-01

By means of the state-of-the-art reactive oxide molecular beam epitaxy, we synthesized (001)- and (111)-orientated polar LaNiO3 thin films. In order to avoid the interfacial reconstructions induced by polar catastrophe, screening metallic Nb-doped SrTiO3 and iso-polarity LaAlO3 substrates were chosen to achieve high-quality (001)-orientated films in a layer-by-layer growth mode. For largely polar (111)-orientated films, we showed that iso-polarity LaAlO3 (111) substrate was more suitable than Nb-doped SrTiO3. In situ reflection high-energy electron diffraction, ex situ high-resolution X-ray diffraction, and atomic force microscopy were used to characterize these films. Our results show that special attentions need to be paid to grow high-quality oxide films with polar orientations, which can prompt the explorations of all-oxide electronics and artificial interfacial engineering to pursue intriguing emergent physics like proposed interfacial superconductivity and topological phases in LaNiO3 based superlattices.

Sensor Functionality of Conducting Polyaniline-Metal Oxide (TiO2/SnO2) Hybrid Materials Films toward Benzene and Toluene Vapors at Room Temperature

NASA Astrophysics Data System (ADS)

Subramanian, E.; Santhanamari, P.; Murugan, C.

2018-05-01

Polyaniline-metal oxide (TiO2/SnO2) organic-inorganic hybrid materials films were fabricated in situ on a printed circuit board (PCB) via drop coating technique. The mixture of aniline and metal oxide (TiO2/SnO2) dispersed in ethanol was applied along with an oxidant for the coating process. The formed material films were characterized by Fourier transform infra-red spectroscopy, x-ray diffraction and scanning electron microscopy techniques. The sensor functionality of the prepared films on PCB was investigated individually for the detection of benzene or toluene vapor at room temperature. The promptness of sensor response to analyte vapor and its recovery to air, as well as the concentration-dependent sensor functionality of the hybrid material films were investigated. The film form of hybrid materials has shown much improved sensor efficiency even at ambient air condition compared to the pellet form of the polyaniline-SnO2 hybrid material reported earlier, which sensed the same analytes only in nitrogen atmosphere.

Amorphous alumina thin films deposited on titanium: Interfacial chemistry and thermal oxidation barrier properties

DOE PAGES

Baggetto, Loic; Charvillat, Cedric; Thebault, Yannick; ...

2015-12-02

Ti/Al 2O 3 bilayer stacks are used as model systems to investigate the role of atomic layer deposition (ALD) and chemical vapor deposition (CVD) to prepare 30-180 nm thick amorphous alumina films as protective barriers for the medium temperature oxidation (500-600⁰C) of titanium, which is employed in aeronautic applications. X-ray diffraction (XRD), transmission electron microscopy (TEM) with selected area electron diffraction (SAED), and X-ray photoelectron spectroscopy (XPS) results show that the films produced from the direct liquid injection (DLI) CVD of aluminum tri-isopropoxide (ATI) are poor oxygen barriers. The films processed using the ALD of trimethylaluminum (TMA) show good barriermore » properties but an extensive intermixing with Ti which subsequently oxidizes. In contrast, the films prepared from dimethyl aluminum isopropoxide (DMAI) by CVD are excellent oxygen barriers and show little intermixing with Ti. Overall, these measurements correlate the effect of the alumina coating thickness, morphology, and stoichiometry resulting from the preparation method to the oxidation barrier properties, and show that compact and stoichiometric amorphous alumina films offer superior barrier properties.« less

The thermally stimulated discharge of ion-irradiated oxide films

NASA Astrophysics Data System (ADS)

Wang, Qiuru; Zeng, Huizhong; Zhang, Wanli

2018-01-01

The ion irradiation technique is utilized to modify the surface structure of amorphous insulating oxide films. While introducing defects, a number of surface charges are injected into the films and captured in the traps during ion irradiation. The variation of surface morphology and the enhancement of emission spectrum corresponding to vacancy defects are respectively verified by atomic force microscopy and photoluminescence measurements. The surface charges trapped in the shallow traps are easy to release caused by thermal excitation, and discharge is observed during heating. Based on the thermally stimulated discharge measurements, the trap parameters of oxide films, such as activation energy and relaxation time, are calculated from experimental data.

Radiation-grafted proton exchange membranes based on co-grafting from binary monomer mixtures into poly(ethylene-co-tetrafluoroethylene) (ETFE) film

NASA Astrophysics Data System (ADS)

Sohn, Joon-Yong; Sung, Hae-Jun; Song, Joo-Myung; Shin, Junhwa; Nho, Young-Chang

2012-08-01

In this study, proton exchange membranes (PEMs) based on a poly(ethylene-co-tetrafluoroethylene) (ETFE) film were synthesized through the graft copolymerization of styrene and VTMS (vinyltrimethoxysilane), or styrene and TMSPM (3-(trimethoxysilyl) propyl methacrylate) binary monomer systems using a simultaneous irradiation method. The prepared membranes with the similar degrees of grafting were investigated by measuring ion exchange capacity, proton conductivity, water uptake, chemical stability, and dimensional stability. The results indicate that the silane-crosslinked proton exchange membrane (PEM) has not only lower water uptake and dimensional change but also high proton conductivity at low humidity condition compared to non-crosslinked poly(ethylene-co-tetrafluoroethylene)-g-poly(styrene sulfonic acid) (ETFE-g-PSSA). Also, the chemical stability of silane-crosslinked fuel cell membranes was more improved than that of non-crosslinked fuel cell membrane.

Sensor Properties of Field-Effect Transistors Based on Graphene Oxide and Nafion Films with Proton Conductivity

NASA Astrophysics Data System (ADS)

Smirnov, V. A.; Mokrushin, A. D.; Denisov, N. N.; Dobrovolsky, Yu. A.

2018-07-01

The proton conductivity of graphene oxide (GO) and Nafion films was studied depending on the humidity and voltage on electrodes. The electric properties of the films were similar, but the mobility of positive charges in Nafion was approximately two orders of magnitude higher than in GO. In GO films, the negative ion current with a positive voltage bias was up to 10% of the proton current, while in Nafion films it was almost absent (<1%). The sensors based on GO and Nafion films were most effective at humidity (RH) in the range 20-80%.

Solid state electrochromic light modulator

DOEpatents

Cogan, Stuart F.; Rauh, R. David

1993-01-01

An all solid-state variable transmission electrochromic device has a source of charge compensating ions. An inorganic oxide counterelectrode film which on reduction with the accompanying insertion of the charge compensating ions increases its transmission of light of predetermined wavelength is separated from a primary electrochromic film which on reduction with the accompanying insertion of the charge compensating ions decreases its transmission of light of predetermined wavelength by an insulating electrolyte film that transports the charge compensating ions. First and second electrodes are contiguous with the inorganic oxide counter electrode film and the primary electrochromic film, respectively, and separated by the three films.

Solid state electrochromic light modulator

DOEpatents

Cogan, Stuart F.; Rauh, R. David

1993-12-07

An all solid-state variable transmission electrochromic device has a source of charge compensating ions. An inorganic oxide counterelectrode film which on reduction with the accompanying insertion of the charge compensating ions increases its transmission of light of predetermined wavelength is separated from a primary electrochromic film which on reduction with the accompanying insertion of the charge compensating ions decreases its transmission of light of predetermined wavelength by an insulating electrolyte film that transports the charge compensating ions. First and second electrodes are contiguous with the inorganic oxide counter electrode film and the primary electrochromic film, respectively, and separated by the three films.

Solid state electrochromic light modulator

DOEpatents

Cogan, Stuart F.; Rauh, R. David

1990-01-01

An all solid-state variable transmission electrochromic device has a source of charge compensating ions. An inorganic oxide counterelectrode film which on reduction with the accompanying insertion of the charge compensating ions increases its transmission of light of predetermined wavelength is separated from a primary electrochromic film which on reduction with the accompanying insertion of the charge compensating ions decreases its transmission of light of predetermined wavelength by an insulating electrolyte film that transports the charge compensating ions. First and second electrodes are contiguous with the inorganic oxide counter electrode film and the primary electrochromic film, respectively, and separated by the three films.

Solid state electrochromic light modulator

DOEpatents

Cogan, S.F.; Rauh, R.D.

1990-07-03

An all solid-state variable transmission electrochromic device has a source of charge compensating ions. An inorganic oxide counter electrode film which on reduction with the accompanying insertion of the charge compensating ions increases its transmission of light of predetermined wavelength is separated from a primary electrochromic film which on reduction with the accompanying insertion of the charge compensating ions decreases its transmission of light of predetermined wavelength by an insulating electrolyte film that transports the charge compensating ions. First and second electrodes are contiguous with the inorganic oxide counter electrode film and the primary electrochromic film, respectively, and separated by the three films. 4 figs.

Intensity analysis of XPS spectra to determine oxide uniformity - Application to SiO2/Si interfaces

NASA Technical Reports Server (NTRS)

Vasquez, R. P.; Grunthaner, F. J.

1980-01-01

A simple method of determining oxide uniformity is derived which requires no knowlege of film thickness, escape depth, or film composition. The method involves only the measurement of oxide and substrate intensities and is illustrated by analysis of XPS spectral data for thin SiO2 films grown both thermally and by low-temperature chemical vapor deposition on monocrystalline Si. A region 20-30 A thick is found near the SiO2/Si interface on thermally oxidized samples which has an inelastic mean free path 35% less than that found in the bulk oxide. This is interpreted as being due to lattice mismatch resulting in a strained region which is structurally, but not stoichiometrically, distinct from the bulk oxide.

Electro-deposition of superconductor oxide films

DOEpatents

Bhattacharya, Raghu N.

2001-01-01

Methods for preparing high quality superconducting oxide precursors which are well suited for further oxidation and annealing to form superconducting oxide films. The method comprises forming a multilayered superconducting precursor on a substrate by providing an electrodeposition bath comprising an electrolyte medium and a substrate electrode, and providing to the bath a plurality of precursor metal salts which are capable of exhibiting superconducting properties upon subsequent treatment. The superconducting precursor is then formed by electrodepositing a first electrodeposited (ED) layer onto the substrate electrode, followed by depositing a layer of silver onto the first electrodeposited (ED) layer, and then electrodepositing a second electrodeposited (ED) layer onto the Ag layer. The multilayered superconducting precursor is suitable for oxidation at a sufficient annealing temperature in air or an oxygen-containing atmosphere to form a crystalline superconducting oxide film.

Method for producing high quality oxide films on substrates

DOEpatents

Ruckman, Mark W.; Strongin, Myron; Gao, Yong L.

1993-01-01

A method for providing an oxide film of a material on the surface of a substrate using a reactive deposition of the material onto the substrate surface in the presence of a solid or liquid layer of an oxidizing gas. The oxidizing gas is provided on the substrate surface in an amount sufficient to dissipate the latent heat of condensation occurring during deposition as well as creating a favorable oxidizing environment for the material.

High quality oxide films on substrates

DOEpatents

Ruckman, Mark W.; Strongin, Myron; Gao, Yong L.

1994-01-01

A method for providing an oxide film of a material on the surface of a substrate using a reactive deposition of the material onto the substrate surface in the presence of a solid or liquid layer of an oxidizing gas. The oxidizing gas is provided on the substrate surface in an amount sufficient to dissipate the latent heat of condensation occurring during deposition as well as creating a favorable oxidizing environment for the material.

Structural properties of iron and nickel mixed oxide nano particles.

NASA Astrophysics Data System (ADS)

Dehipawala, Sunil; Samarasekara, Pubudu; Gafney, Harry

Small scale magnets have very high technological importance today. Instead of traditional expensive methods, scientists are exploring new low cost methods to produce micro magnets. We synthesized thin film magnets containing iron and nickel oxides. Films will be synthesized using sol-gel method and spin coating technique. Several different precursor concentrations were tested to find out the ideal concentrations for stable thin films. Structural properties of iron and nickel oxide particles were investigated using X-ray absorption and Mossbauer spectroscopy. PSC-CUNY.

Fundamental Studies on Confinement Effects in Ionic Conduction and Inversion Layers in 2-D Single Crystal Free Standing Oxide Membranes

DTIC Science & Technology

2014-02-14

properties of VO2 films and membranes and compare the results with annealing VO2 films and membranes in hydrogen to provide insight into the doping...2-dimensional free standing membrane with correlated oxides may also lead to new insights into mesoscopic electronic phenomena. Vanadium oxide ( VO2 ...well as for potential applications in switching devices. While studies have been conducted on thin films, hybrid layers of VO2 supported on other

Atomic Layer-Deposited Titanium-Doped Vanadium Oxide Thin Films and Their Thermistor Applications

DOE PAGES

Wang, Shuyu; Yu, Shifeng; Lu, Ming; ...

2016-11-30

In this paper, we report the enhancement in the temperature coefficient of resistance (TCR) of atomic layer-deposited vanadium oxide thin films through the doping of titanium oxide. The Hall effect measurement provides a potential explanation for the phenomenon. The composition and morphology of the thin films are investigated by x-ray diffraction and scanning electron microscopy techniques. The high TCR, good uniformity, and low processing temperature of the material make it a good candidate for thermistor application.

Uncooled Cantilever Microbolometer Focal Plane Arrays with mK Temperature Resolution: Engineering Mechanics for the Next Generation

DTIC Science & Technology

2009-11-25

34Nanoindentation Stress-Strain Curves of Plasma Enhanced Chemical Vapor Deposited Silicon Oxide Thin Films," Thin Solid Films, 516 (8) (2008) 1941-1951. 9. S...1604. 5. Z. Cao* and X. Zhang, "Measurement of Stress-Strain Curves of PECVD Silicon Oxide Thin Films by Means of Nanoindentation," in Processing...Microsystems (Transducers 󈧋), Lyon, France, June 10-14, 2007. 9. Z. Cao* and X. Zhang, “Measurement of Stress-strain Curves of PECVD Silicon Oxide

Hybrid Co-deposition of Mixed-Valent Molybdenum-Germanium Oxides (MoxGeyOz): A Route to Tunable Optical Transmission (Postprint)

DTIC Science & Technology

2015-08-05

to increased doping levels in indirect semiconductors [84]. The slope, and magnitude of the transmission curves continue to decrease alongside UL...periodically aluminium- doped zinc oxide thin films, Thin Solid Films 519 (2011) 2280–2286. [2] T. Minami, H. Nanto, S. Takata, Highly conductive and...transparent aluminum doped zinc oxide thin films prepared by RF magnetron sputtering, Jpn. J. Appl. Phys. 23 (1984) L280. [3] T. Minami, Present status of

Sensitization of Nanocrystalline Metal Oxides with a Phosphonate-Functionalized Perylene Diimide for Photoelectrochemical Water Oxidation with a CoOx Catalyst.

PubMed

Kirner, Joel T; Finke, Richard G

2017-08-23

A planar organic thin film composed of a perylene diimide dye (N,N'-bis(phosphonomethyl)-3,4,9,10-perylenediimide, PMPDI) with photoelectrochemically deposited cobalt oxide (CoO x ) catalyst was previously shown to photoelectrochemically oxidize water (DOI: 10.1021/am405598w). Herein, the same PMPDI dye is studied for the sensitization of different nanostructured metal oxide (nano-MO x ) films in a dye-sensitized photoelectrochemical cell architecture. Dye adsorption kinetics and saturation decreases in the order TiO 2 > SnO 2 ≫ WO 3 . Despite highest initial dye loading on TiO 2 films, photocurrent with hydroquinone (H 2 Q) sacrificial reductant in pH 7 aqueous solution is much higher on SnO 2 films, likely due to a higher driving force for charge injection into the more positive conduction band energy of SnO 2 . Dyeing conditions and SnO 2 film thickness were subsequently optimized to achieve light-harvesting efficiency >99% at the λ max of the dye, and absorbed photon-to-current efficiency of 13% with H 2 Q, a 2-fold improvement over the previous thin-film architecture. A CoO x water-oxidation catalyst was photoelectrochemically deposited, allowing for photoelectrochemical water oxidation with a faradaic efficiency of 31 ± 7%, thus demonstrating the second example of a water-oxidizing, dye-sensitized photoelectrolysis cell composed entirely of earth-abundant materials. However, deposition of CoO x always results in lower photocurrent due to enhanced recombination between catalyst and photoinjected electrons in SnO 2 , as confirmed by open-circuit photovoltage measurements. Possible future studies to enhance photoanode performance are discussed, including alternative catalyst deposition strategies or structural derivatization of the perylene dye.

Sensitization of Nanocrystalline Metal Oxides with a Phosphonate-Functionalized Perylene Diimide for Photoelectrochemical Water Oxidation with a CoO x Catalyst

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kirner, Joel T.; Finke, Richard G.

A planar organic thin film composed of a perylene diimide dye (N,N'-bis(phosphonomethyl)-3,4,9,10-perylenediimide, PMPDI) with photoelectrochemically deposited cobalt oxide (CoO x) catalyst was previously shown to photoelectrochemically oxidize water (DOI: 10.1021/am405598w). Herein, the same PMPDI dye is studied for the sensitization of different nanostructured metal oxide (nano-MO x) films in a dye-sensitized photoelectrochemical cell architecture. Dye adsorption kinetics and saturation decreases in the order TiO 2 > SnO 2 >> WO 3. Despite highest initial dye loading on TiO 2 films, photocurrent with hydroquinone (H 2Q) sacrificial reductant in pH 7 aqueous solution is much higher on SnO 2 films, likelymore » due to a higher driving force for charge injection into the more positive conduction band energy of SnO 2. Dyeing conditions and SnO 2 film thickness were subsequently optimized to achieve light-harvesting efficiency >99% at the λmax of the dye, and absorbed photon-to-current efficiency of 13% with H 2Q, a 2-fold improvement over the previous thin-film architecture. A CoO x water-oxidation catalyst was photoelectrochemically deposited, allowing for photoelectrochemical water oxidation with a faradaic efficiency of 31 ± 7%, thus demonstrating the second example of a water-oxidizing, dye-sensitized photoelectrolysis cell composed entirely of earth-abundant materials. However, deposition of CoO x always results in lower photocurrent due to enhanced recombination between catalyst and photoinjected electrons in SnO 2, as confirmed by open-circuit photovoltage measurements. Possible future studies to enhance photoanode performance are also discussed, including alternative catalyst deposition strategies or structural derivatization of the perylene dye.« less

Sensitization of Nanocrystalline Metal Oxides with a Phosphonate-Functionalized Perylene Diimide for Photoelectrochemical Water Oxidation with a CoO x Catalyst

DOE PAGES

Kirner, Joel T.; Finke, Richard G.

2017-07-20

A planar organic thin film composed of a perylene diimide dye (N,N'-bis(phosphonomethyl)-3,4,9,10-perylenediimide, PMPDI) with photoelectrochemically deposited cobalt oxide (CoO x) catalyst was previously shown to photoelectrochemically oxidize water (DOI: 10.1021/am405598w). Herein, the same PMPDI dye is studied for the sensitization of different nanostructured metal oxide (nano-MO x) films in a dye-sensitized photoelectrochemical cell architecture. Dye adsorption kinetics and saturation decreases in the order TiO 2 > SnO 2 >> WO 3. Despite highest initial dye loading on TiO 2 films, photocurrent with hydroquinone (H 2Q) sacrificial reductant in pH 7 aqueous solution is much higher on SnO 2 films, likelymore » due to a higher driving force for charge injection into the more positive conduction band energy of SnO 2. Dyeing conditions and SnO 2 film thickness were subsequently optimized to achieve light-harvesting efficiency >99% at the λmax of the dye, and absorbed photon-to-current efficiency of 13% with H 2Q, a 2-fold improvement over the previous thin-film architecture. A CoO x water-oxidation catalyst was photoelectrochemically deposited, allowing for photoelectrochemical water oxidation with a faradaic efficiency of 31 ± 7%, thus demonstrating the second example of a water-oxidizing, dye-sensitized photoelectrolysis cell composed entirely of earth-abundant materials. However, deposition of CoO x always results in lower photocurrent due to enhanced recombination between catalyst and photoinjected electrons in SnO 2, as confirmed by open-circuit photovoltage measurements. Possible future studies to enhance photoanode performance are also discussed, including alternative catalyst deposition strategies or structural derivatization of the perylene dye.« less

Characterization of an Olive Flounder Bone Gelatin-Zinc Oxide Nanocomposite Film and Evaluation of Its Potential Application in Spinach Packaging.

PubMed

Beak, Songee; Kim, Hyeri; Song, Kyung Bin

2017-11-01

Olive flounder bone gelatin (OBG) was used for a film base material in this study. In addition, zinc oxide nanoparticles (ZnO) were incorporated into the OBG film to prepare a nanocomposite film and to impart antimicrobial activity to it. The tensile strength of the OBG film increased by 6.62 MPa, and water vapor permeability and water solubility decreased by 0.93 × 10 -9 g/m s Pa and 13.79%, respectively, by the addition of ZnO to the OBG film. In particular, the OBG-ZnO film exhibited antimicrobial activity against Listeria monocytogenes. To investigate the applicability of the OBG-ZnO packaging film, fresh spinach was wrapped in this film and stored for a week. The results indicated that the OBG-ZnO film showed antimicrobial activity against L. monocytogenes inoculated on spinach without affecting the quality of spinach, such as vitamin C content and color. Thus, the OBG-ZnO nanocomposite film can be applied as an efficient antimicrobial food packaging material. As a base material of edible films, gelatin was extracted from olive flounder bone, which is fish processing by-product. Olive flounder bone gelatin (OBG) nanocomposite films were prepared with zinc oxide nanoparticles (ZnO). For an application to antimicrobial packaging, spinach was wrapped with the OBG-ZnO nanocomposite film. © 2017 Institute of Food Technologists®.

Direct Growth of Crystalline Tungsten Oxide Nanorod Arrays by a Hydrothermal Process and Their Electrochromic Properties

NASA Astrophysics Data System (ADS)

Lu, Chih-Hao; Hon, Min Hsiung; Leu, Ing-Chi

2017-04-01

Transparent crystalline tungsten oxide nanorod arrays for use as an electrochromic layer have been directly prepared on fluorine-doped tin oxide-coated glass via a facile tungsten film-assisted hydrothermal process using aqueous tungsten hexachloride solution. X-ray diffraction analysis and field-emission scanning electron microscopy were used to characterize the phase and morphology of the grown nanostructures. Arrays of tungsten oxide nanorods with diameter of ˜22 nm and length of ˜240 nm were obtained at 200°C after 8 h of hydrothermal reaction. We propose a growth mechanism for the deposition of the monoclinic tungsten oxide phase in the hydrothermal environment. The tungsten film was first oxidized to tungsten oxide to provide seed sites for crystal growth and address the poor connection between the growing tungsten oxide and substrate. Aligned tungsten oxide nanorod arrays can be grown by a W thin film-assisted heterogeneous nucleation process with NaCl as a structure-directing agent. The fabricated electrochromic device demonstrated optical modulation (coloration/bleaching) at 632.8 nm of ˜41.2% after applying a low voltage of 0.1 V for 10 s, indicating the potential of such nanorod array films for use in energy-saving smart windows.

Native oxide transport and removal during the atomic layer deposition of Ta{sub 2}O{sub 5} on InAs(100) surfaces

DOE Office of Scientific and Technical Information (OSTI.GOV)

Henegar, Alex J.; Gougousi, Theodosia, E-mail: gougousi@umbc.edu

Atomic layer deposition (ALD) was used to deposit Ta{sub 2}O{sub 5} on etched and native oxide-covered InAs(100) using pentakis dimethyl amino tantalum and H{sub 2}O at 200–300 °C. The transport and removal of the native oxides during the ALD process was investigated using x-ray photoelectron spectroscopy (XPS). Depositions above 200 °C on etched surfaces protected the interface from reoxidation. On native oxide-covered surfaces, depositions resulted in enhanced native oxide removal at higher temperatures. The arsenic oxides were completely removed above 250 °C after 3 nm of film growth, but some of the As{sub 2}O{sub 3} remained in the film at lower temperatures. Angle-resolved andmore » sputter depth profiling XPS confirmed indium and arsenic oxide migration into the Ta{sub 2}O{sub 5} film at deposition temperatures as low as 200 °C. Continuous removal of both arsenic and indium oxides was confirmed even after the deposition of several monolayers of a coalesced Ta{sub 2}O{sub 5} film, and it was demonstrated that native oxide transport is a prevalent component of the interface “clean-up” mechanism.« less

Alkali oxide-tantalum oxide and alkali oxide-niobium oxide ionic conductors

NASA Technical Reports Server (NTRS)

Roth, R. S.; Parker, H. S.; Brower, W. S.; Minor, D.

1974-01-01

A search was made for new cationic conducting phases in alkali-tantalate and niobate systems. The phase equilibrium diagrams were constructed for the six binary systems Nb2O5-LiNbO3, Nb2O5-NaNbO3, Nb2O5-KNbO3, Ta2O5-NaTaO3, Ta2O5-LiTaO3, and Ta2O5-KTaO3. Various other binary and ternary systems were also examined. Pellets of nineteen phases were evaluated (by the sponsoring agency) by dielectric loss measurements. Attempts were made to grow large crystals of eight different phases. The system Ta2O5-KTaO3 contains at least three phases which showed peaks in dielectric loss vs. temperature. All three contain structures related to the tungsten bronzes with alkali ions in non-stoichiometric crystallographic positions.