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Sample records for bismuth silicon oxide

  1. Silicon-based bridge wire micro-chip initiators for bismuth oxide-aluminum nanothermite

    NASA Astrophysics Data System (ADS)

    Staley, C. S.; Morris, C. J.; Thiruvengadathan, R.; Apperson, S. J.; Gangopadhyay, K.; Gangopadhyay, S.

    2011-11-01

    We present a micro-manufacturing process for fabricating silicon-based bridge wire micro-chip initiators with the capacity to liberate joules of chemical energy at the expense of micro joules of input electrical energy. The micro-chip initiators are assembled with an open material reservoir utilizing a novel 47 °C melting point solder alloy bonding procedure and integrated with a bismuth oxide-aluminum nanothermite energetic composite. The electro-thermal conversion efficiency of the initiators is enhanced by the use of a nanoporous silicon bed which impedes thermal coupling between the bridge wire and bulk silicon substrate while maintaining the structural integrity of the device. Electrical behaviors of the ignition elements are investigated to extract minimum input power and energy requirements of 382.4 mW and 26.51 µJ, respectively, both in the absence and presence of an injected bismuth oxide-aluminum nanothermite composition. Programmed combustion of bismuth oxide-aluminum nanothermite housed within these initiators is demonstrated with a success rate of 100% over a 30 to 80 µJ range of firing energies and ignition response times of less than 2 µs are achieved in the high input power operation regime. The micro-initiators reported here are intended for use in miniaturized actuation technologies.

  2. Low-temperature photochromic response of phosphorus-doped bismuth silicon oxide

    NASA Astrophysics Data System (ADS)

    McCullough, J. S.; Harmon, Angela; Martin, J. J.; Martin, J. J.; Harris, M. T.; Larkin, J. J.

    1995-08-01

    Phosphorus is one of several dopants that electronically compensate the native deep donor responsible for the yellow coloration observed in bismuth silicon oxide (BSO). Low-temperature optical absorption measurements of a series of Czochralski-grown P-doped BSO crystals show that ˜0.1-0.15 at. % P is needed in the sample to fully remove the yellow coloration. The absorption cutoff in the fully compensated P-doped sample was at 3.2 eV while compensated Al- and Ga-doped samples cutoff at 3.35 eV. Excitation at 10-15 K with near band-edge light produces photochromic absorption bands. In the lightly-doped (partially bleached) samples these bands were identical to those observed in undoped BSO. In the fully bleached sample a new spectrum was observed. Its major contribution was a band centered near 1.8 eV with a weaker absorption in the blue-green. By comparison with the spectra observed in undoped and in Al-doped material before and after photoexcitation it is believed that the 1.8 eV band is due to the [PO4]- center and that the broad 2.45 eV band observed in Al- and Ga-doped BSO is due to the [BiO4]0 center.

  3. Bismuth Oxide Thin Films Deposited on Silicon Through Pulsed Laser Ablation, for Infrared Detectors

    NASA Astrophysics Data System (ADS)

    Condurache-Bota, Simona; Constantinescu, Catalin; Tigau, Nicolae; Praisler, Mirela

    2016-12-01

    Infrared detectors are used in many human activities, from industry to military, telecommunications, environmental studies and even medicine. Bismuth oxide thin films have proved their potential for optoelectronic applications, but their uses as infrared sensors have not been thoroughly studied so far. In this paper, pulsed laser ablation of pure bismuth targets within a controlled oxygen atmosphere is proposed for the deposition of bismuth oxide films on Si (100) substrates. Crystalline films were obtained, whose uniformity depends on the deposition conditions (number of laser pulses and the use of a radio-frequency (RF) discharge of the oxygen inside the deposition chamber). The optical analysis proved that the refractive index of the films is higher than 3 and that their optical bandgap is around 1eV, recommending them for infrared applications.

  4. Hydrothermal synthesis of bismuth germanium oxide

    SciTech Connect

    Boyle, Timothy J.

    2016-12-13

    A method for the hydrothermal synthesis of bismuth germanium oxide comprises dissolving a bismuth precursor (e.g., bismuth nitrate pentahydrate) and a germanium precursor (e.g., germanium dioxide) in water and heating the aqueous solution to an elevated reaction temperature for a length of time sufficient to produce the eulytite phase of bismuth germanium oxide (E-BGO) with high yield. The E-BGO produced can be used as a scintillator material. For example, the air stability and radioluminescence response suggest that the E-BGO can be employed for medical applications.

  5. Revealing bismuth oxide hollow nanoparticle formation by the Kirkendall effect.

    PubMed

    Niu, Kai-Yang; Park, Jungwon; Zheng, Haimei; Alivisatos, A Paul

    2013-01-01

    We study the formation of bismuth oxide hollow nanoparticles by the Kirkendall effect using liquid cell transmission electron microscopy (TEM). Rich dynamics of bismuth diffusion through the bismuth oxide shell have been captured in situ. The diffusion coefficient of bismuth through bismuth oxide shell is 3-4 orders of magnitude higher than that of bulk. Observation reveals that defects, temperature, sizes of the particles, and so forth can affect the diffusion of reactive species and modify the kinetics of the hollowing process.

  6. Aging phenomenon of stabilized bismuth oxides

    SciTech Connect

    Jiang, N.; Buchanan, R.M.; Henn, F.E.G.; Marshall, A.F.; Stevenson, D.A. . Dept. of Materials Science and Engineering); Washsman, E.D. . Materials Research Center)

    1994-03-01

    Stabilized bismuth oxides exhibit a decay in conductivity when annealed at temperatures below 600 C. The authors refer to this phenomenon as aging and it is distinct from a conventional crystallographic phase transformation. This phenomenon is revealed by an endotherm from DSC thermal analysis and results in the formation of a superstructure observable by TEM diffraction patterns, yet no change in structure is observable by XRD. Since oxygen vacancies are the mobile defects responsible for ionic conductivity, the authors attribute the aging process to the ordering of oxygen vacancies by an order-disorder transition below [approximately]600 C.

  7. Highly ytterbium-doped bismuth-oxide-based fiber.

    PubMed

    Ohara, Seiki; Kuroiwa, Yutaka

    2009-08-03

    Thermally stable highly ytterbium-doped bismuth-oxide-based glasses have been investigated. The absorbance increased linearly with Yb(2)O(3) concentration, reaching 7800 dB/m with 3 mol-% of Yb(2)O(3). An ytterbium-doped bismuth-oxide-based fiber has also been fabricated with a fiber loss of 0.24 dB/m. A fiber laser is also demonstrated, and it shows a slope efficiency of 36%.

  8. Buried oxide layer in silicon

    DOEpatents

    Sadana, Devendra Kumar; Holland, Orin Wayne

    2001-01-01

    A process for forming Silicon-On-Insulator is described incorporating the steps of ion implantation of oxygen into a silicon substrate at elevated temperature, ion implanting oxygen at a temperature below 200.degree. C. at a lower dose to form an amorphous silicon layer, and annealing steps to form a mixture of defective single crystal silicon and polycrystalline silicon or polycrystalline silicon alone and then silicon oxide from the amorphous silicon layer to form a continuous silicon oxide layer below the surface of the silicon substrate to provide an isolated superficial layer of silicon. The invention overcomes the problem of buried isolated islands of silicon oxide forming a discontinuous buried oxide layer.

  9. Degradation of organic dyes via bismuth silver oxide initiated direct oxidation coupled with sodium bismuthate based visible light photocatalysis.

    PubMed

    Yu, Kai; Yang, Shaogui; Liu, Cun; Chen, Hongzhe; Li, Hui; Sun, Cheng; Boyd, Stephen A

    2012-07-03

    Organic dye degradation was achieved via direct oxidation by bismuth silver oxide coupled with visible light photocatalysis by sodium bismuthate. Crystal violet dye decomposition by each reagent proceeded via two distinct pathways, each involving different active oxygen species. A comparison of each treatment method alone and in combination demonstrated that using the combined methods in sequence achieved a higher degree of degradation, and especially mineralization, than that obtained using either method alone. In the combined process direct oxidation acts as a pretreatment to rapidly bleach the dye solution which substantially facilitates subsequent visible light photocatalytic processes. The integrated sequential direct oxidation and visible light photocatalysis are complementary manifesting a > 100% increase in TOC removal, compared to either isolated method. The combined process is proposed as a novel and effective technology based on one primary material, sodium bismuthate, for treating wastewaters contaminated by high concentrations of organic dyes.

  10. Crystalline oxides on silicon.

    PubMed

    Reiner, James W; Kolpak, Alexie M; Segal, Yaron; Garrity, Kevin F; Ismail-Beigi, Sohrab; Ahn, Charles H; Walker, Fred J

    2010-07-20

    This review outlines developments in the growth of crystalline oxides on the ubiquitous silicon semiconductor platform. The overall goal of this endeavor is the integration of multifunctional complex oxides with advanced semiconductor technology. Oxide epitaxy in materials systems achieved through conventional deposition techniques is described first, followed by a description of the science and technology of using atomic layer-by-layer deposition with molecular beam epitaxy (MBE) to systematically construct the oxide-silicon interface. An interdisciplinary approach involving MBE, advanced real-space structural characterization, and first-principles theory has led to a detailed understanding of the process by which the interface between crystalline oxides and silicon forms, the resulting structure of the interface, and the link between structure and functionality. Potential applications in electronics and photonics are also discussed.

  11. Bismuth-based oxide semiconductors: Mild synthesis and practical applications

    NASA Astrophysics Data System (ADS)

    Timmaji, Hari Krishna

    In this dissertation study, bismuth based oxide semiconductors were prepared using 'mild' synthesis techniques---electrodeposition and solution combustion synthesis. Potential environmental remediation and solar energy applications of the prepared oxides were evaluated. Bismuth vanadate (BiVO4) was prepared by electrodeposition and solution combustion synthesis. A two step electrosynthesis strategy was developed and demonstrated for the first time. In the first step, a Bi film was first electrodeposited on a Pt substrate from an acidic BiCl3 medium. Then, this film was anodically stripped in a medium containing hydrolyzed vanadium precursor, to generate Bi3+, and subsequent BiVO4 formation by in situ precipitation. The photoelectrochemical data were consistent with the in situ formation of n-type semiconductor films. In the solution combustion synthesis procedure, BiVO4 powders were prepared using bismuth nitrate pentahydrate as the bismuth precursor and either vanadium chloride or vanadium oxysulfate as the vanadium precursor. Urea, glycine, or citric acid was used as the fuel. The effect of the vanadium precursor on the photocatalytic activity of combustion synthesized BiVO 4 was evaluated in this study. Methyl orange was used as a probe to test the photocatalytic attributes of the combustion synthesized (CS) samples, and benchmarked against a commercial bismuth vanadate sample. The CS samples showed superior activity to the commercial benchmark sample, and samples derived from vanadium chloride were superior to vanadium oxysulfate counterparts. The photoelectrochemical properties of the various CS samples were also studied and these samples were shown to be useful both for environmental photocatalytic remediation and water photooxidation applications. Silver bismuth tungstate (AgBiW2O8) nanoparticles were prepared for the first time by solution combustion synthesis by using silver nitrate, bismuth nitrate, sodium tungstate as precursors for Ag, Bi, and W

  12. Oxidation resistance of silicon ceramics

    NASA Technical Reports Server (NTRS)

    Yasutoshi, H.; Hirota, K.

    1984-01-01

    Oxidation resistance, and examples of oxidation of SiC, Si3N4 and sialon are reviewed. A description is given of the oxidation mechanism, including the oxidation product, oxidation reaction and the bubble size. The oxidation reactions are represented graphically. An assessment is made of the oxidation process, and an oxidation example of silicon ceramics is given.

  13. Potentiometric determination of plutonium by sodium bismuthate oxidation.

    PubMed

    Charyulu, M M; Rao, V K; Natarajan, P R

    1984-12-01

    A potentiometric method for the determination of plutonium is described, in which the plutonium is quantitatively oxidized to plutonium(VI) with sodium bismuthate in nitric acid medium, the excess of oxidant is destroyed chemically and plutonium(VI) is reduced to plutonium(IV) with a measured excess of iron(II), the surplus of which is back-titrated with dichromate. For 3-5 mg of plutonium the error is less than 0.2%. For submilligram quantities of plutonium in presence of macro-amounts of uranium the error is below 2.0%.

  14. METHOD OF PREPARING URANIUM, THORIUM, OR PLUTONIUM OXIDES IN LIQUID BISMUTH

    DOEpatents

    Davidson, J.K.; Robb, W.L.; Salmon, O.N.

    1960-11-22

    A method is given for forming compositions, as well as the compositions themselves, employing uranium hydride in a liquid bismuth composition to increase the solubility of uranium, plutonium and thorium oxides in the liquid bismuth. The finely divided oxide of uranium, plutonium. or thorium is mixed with the liquid bismuth and uranium hydride, the hydride being present in an amount equal to about 3 at. %, heated to about 5OO deg C, agitated and thereafter cooled and excess resultant hydrogen removed therefrom.

  15. Silicon-Based Oxide/Silicon/Oxide Resonant Tunneling

    DTIC Science & Technology

    1998-03-01

    approximately 0.5 eV in the limit of high Ge content where only thin layers can be grown without lattice relaxation. Silicon germanium and its alloys...FINAL REPORT FOR SILICON -BASED OXIDE/ SILICON /OXIDE RESONANT TUNNELING CONTRACT NO. F49620-95-C-0001 1 December 1994 - 31 March 1998 Prepared For...RSSilicon-Based Oxide/ Silicon /Oxide Re sonant Tunneling 61102F L Aurkaft-n2305/CS Dr Seabaugh 7. MORMIG VIGNIIIO;NAME(S) 1 GRISS(ES) Pf~fOMING ORGANIZATION

  16. Silicon oxidation in fluoride solutions

    NASA Technical Reports Server (NTRS)

    Sancier, K. M.; Kapur, V.

    1980-01-01

    Silicon is produced in a NaF, Na2SiF6, and Na matrix when SiF4 is reduced by metallic sodium. Hydrogen is evolved during acid leaching to separate the silicon from the accompanying reaction products, NaF and Na2SiF6. The hydrogen evolution reaction was studied under conditions simulating leaching conditions by making suspensions of the dry silicon powder in aqueous fluoride solutions. The mechanism for the hydrogen evolution is discussed in terms of spontaneous oxidation of silicon resulting from the cooperative effects of (1) elemental sodium in the silicon that reacts with water to remove a protective silica layer, leaving clean reactive silicon, and (2) fluoride in solution that complexes with the oxidized silicon in solution and retards formation of a protective hydrous oxide gel.

  17. Optical pumping and readout of bismuth hyperfine states in silicon for atomic clock applications

    PubMed Central

    Saeedi, K.; Szech, M.; Dluhy, P.; Salvail, J.Z.; Morse, K.J.; Riemann, H.; Abrosimov, N.V.; Nötzel, N.; Litvinenko, K.L.; Murdin, B.N.; Thewalt, M.L.W.

    2015-01-01

    The push for a semiconductor-based quantum information technology has renewed interest in the spin states and optical transitions of shallow donors in silicon, including the donor bound exciton transitions in the near-infrared and the Rydberg, or hydrogenic, transitions in the mid-infrared. The deepest group V donor in silicon, bismuth, has a large zero-field ground state hyperfine splitting, comparable to that of rubidium, upon which the now-ubiquitous rubidium atomic clock time standard is based. Here we show that the ground state hyperfine populations of bismuth can be read out using the mid-infrared Rydberg transitions, analogous to the optical readout of the rubidium ground state populations upon which rubidium clock technology is based. We further use these transitions to demonstrate strong population pumping by resonant excitation of the bound exciton transitions, suggesting several possible approaches to a solid-state atomic clock using bismuth in silicon, or eventually in enriched 28Si. PMID:25990870

  18. Bismuth Oxide Nanoparticles in the Stratosphere

    NASA Technical Reports Server (NTRS)

    Rietmeijer, Frans J. M.; Mackinnon, Ian D. R.

    1997-01-01

    Platey grains of cubic Bi2O3, alpha-Bi2O3, and Bi2O(2.75), nanograins were associated with chondritic porous interplanetary dust particles W7029C1, W7029E5, and 2011C2 that were collected in the stratosphere at 17-19 km altitude. Similar Bi oxide nanograins were present in the upper stratosphere during May 1985. These grains are linked to the plumes of several major volcanic eruptions during the early 1980s that injected material into the stratosphere. The mass of sulfur from these eruptions is a proxy for the mass of stratospheric Bi from which we derive the particle number densities (p/cu m) for "average Bi2O3 nanograins" due to this volcanic activity and those necessary to contaminate the extraterrestrial chondritic porous interplanetary dust particles via collisional sticking. The match between both values supports the idea that Bi2O3 nanograins of volcanic origin could contaminate interplanetary dust particles in the Earth's stratosphere.

  19. In vitro antibacterial activity and cytocompatibility of bismuth doped micro-arc oxidized titanium.

    PubMed

    Lin, Dan-Jae; Tsai, Ming-Tzu; Shieh, Tzong-Ming; Huang, Heng-Li; Hsu, Jui-Ting; Ko, Yi-Chun; Fuh, Lih-Jyh

    2013-01-01

    Chemical manipulations of the implant surface produce a bactericidal feature to prevent infections around dental implants. Despite the successful use of bismuth against mucosal and dermis infections, the antibacterial effect of bismuth in the oral cavity remains under investigation. The aim of this study was to evaluate the antibacterial activities of bismuth compounds against Actinobacillus actinomycetemcomitans, Staphylococcus mutans, and methicillin-resistant Staphylococcus aureus (MRSA), and to investigate the antimicrobial effects of bismuth doped micro-arc oxidation (MAO) titanium via an agar diffusion test. Cell viability, alkaline phosphatase activity, and mineralization level of MG63 osteoblast-like cells seeded on the coatings were evaluated at 1, 7, and 14 days. The results demonstrate that bismuth nitrate possess superior antibacterial activity when compared with bismuth acetate, bismuth subgallate, and silver nitrate. The bismuth doped MAO coating (contained 6.2 atomic percentage bismuth) had good biological affinities to the MG63 cells and showed a higher antibacterial efficacy against Actinobacillus actinomycetemcomitans and MRSA, where the reduction rates of colony numbers is higher than that of the control group by 1.5 and 1.9 times, respectively. These in vitro evaluations demonstrate that titanium implants with bismuth on the surface may be useful for better infection control.

  20. Structure and resistivity of bismuth nanobelts in situ synthesized on silicon wafer through an ethanol-thermal method

    SciTech Connect

    Gao Zheng; Qin Haiming; Yan Tao

    2011-12-15

    Bismuth nanobelts in situ grown on a silicon wafer were synthesized through an ethanol-thermal method without any capping agent. The structure of the bismuth belt-silicon composite nanostructure was characterized by scanning electron microscope, energy-dispersive X-ray spectroscopy, and high resolution transmission electron microscope. The nanobelt is a multilayered structure 100-800 nm in width and over 50 {mu}m in length. One layer has a thickness of about 50 nm. A unique sword-like nanostructure is observed as the initial structure of the nanobelts. From these observations, a possible growth mechanism of the nanobelt is proposed. Current-voltage property measurements indicate that the resistivity of the nanobelts is slightly larger than that of the bulk bismuth material. - Graphical Abstract: TEM images, EDS, and electron diffraction pattern of bismuth nanobelts. Highlights: Black-Right-Pointing-Pointer Bismuth nanobelts in situ grown on silicon wafer were achieved. Black-Right-Pointing-Pointer Special bismuth-silicon nanostructure. Black-Right-Pointing-Pointer Potential application in sensitive magnetic sensor and other electronic devices.

  1. Tributylphosphate extraction behavior of bismuthate-oxidized americium.

    PubMed

    Mincher, Bruce J; Martin, Leigh R; Schmitt, Nicholas C

    2008-08-04

    Higher oxidation states of americium have long been known; however, options for their preparation in acidic solution are limited. The conventional choice, silver-catalyzed peroxydisulfate, is not useful at nitric acid concentrations above about 0.3 M. We investigated the use of sodium bismuthate as an oxidant for Am (3+) in acidic solution. Room-temperature oxidation produced AmO 2 (2+) quantitatively, whereas oxidation at 80 degrees C produced AmO 2 (+) quantitatively. The efficacy of the method for the production of oxidized americium was verified by fluoride precipitation and by spectroscopic absorbance measurements. We performed absorbance measurements using a conventional 1 cm cell for high americium concentrations and a 100 cm liquid waveguide capillary cell for low americium concentrations. Extinction coefficients for the absorbance of Am (3+) at 503 nm, AmO 2 (+) at 514 nm, and AmO 2 (2+) at 666 nm in 0.1 M nitric acid are reported. We also performed solvent extraction experiments with the hexavalent americium using the common actinide extraction ligand tributyl phosphate (TBP) for comparison to the other hexavalent actinides. Contact with 30% tributyl phosphate in dodecane reduced americium; it was nevertheless extracted using short contact times. The TBP extraction of AmO 2 (2+) over a range of nitric acid concentrations is shown for the first time and was found to be analogous to that of uranyl, neptunyl, and plutonyl ions.

  2. Tributylphosphate Extraction Behavior of Bismuthate-Oxidized Americium

    SciTech Connect

    Mincher; Leigh R. Martin; Nicholas C. Schmitt

    2008-08-01

    Higher oxidation states of americium have long been known; however, options for their preparation in acidic solution are limited. The conventional choice, silver-catalyzed peroxydisulfate, is not useful at nitric acid concentrations above about 0.3 M. We investigated the use of sodium bismuthate as an oxidant for Am3+ in acidic solution. Room-temperature oxidation produced AmO2 2+ quantitatively, whereas oxidation at 80 °C produced AmO2+ quantitatively. The efficacy of the method for the production of oxidized americium was verified by fluoride precipitation and by spectroscopic absorbance measurements. We performed absorbance measurements using a conventional 1 cm cell for high americium concentrations and a 100 cm liquid waveguide capillary cell for low americium concentrations. Extinction coefficients for the absorbance of Am3+ at 503 nm, AmO2+ at 514 nm, and AmO2 2+ at 666 nm in 0.1 M nitric acid are reported. We also performed solvent extraction experiments with the hexavalent americium using the common actinide extraction ligand tributyl phosphate (TBP) for comparison to the other hexavalent actinides. Contact with 30% tributyl phosphate in dodecane reduced americium; it was nevertheless extracted using short contact times. The TBP extraction of AmO2 2+ over a range of nitric acid concentrations is shown for the first time and was found to be analogous to that of uranyl, neptunyl, and plutonyl ions.

  3. Nanoporous silicon oxide memory.

    PubMed

    Wang, Gunuk; Yang, Yang; Lee, Jae-Hwang; Abramova, Vera; Fei, Huilong; Ruan, Gedeng; Thomas, Edwin L; Tour, James M

    2014-08-13

    Oxide-based two-terminal resistive random access memory (RRAM) is considered one of the most promising candidates for next-generation nonvolatile memory. We introduce here a new RRAM memory structure employing a nanoporous (NP) silicon oxide (SiOx) material which enables unipolar switching through its internal vertical nanogap. Through the control of the stochastic filament formation at low voltage, the NP SiOx memory exhibited an extremely low electroforming voltage (∼ 1.6 V) and outstanding performance metrics. These include multibit storage ability (up to 9-bits), a high ON-OFF ratio (up to 10(7) A), a long high-temperature lifetime (≥ 10(4) s at 100 °C), excellent cycling endurance (≥ 10(5)), sub-50 ns switching speeds, and low power consumption (∼ 6 × 10(-5) W/bit). Also provided is the room temperature processability for versatile fabrication without any compliance current being needed during electroforming or switching operations. Taken together, these metrics in NP SiOx RRAM provide a route toward easily accessed nonvolatile memory applications.

  4. Bismuth oxide aqueous colloidal nanoparticles inhibit Candida albicans growth and biofilm formation.

    PubMed

    Hernandez-Delgadillo, Rene; Velasco-Arias, Donaji; Martinez-Sanmiguel, Juan Jose; Diaz, David; Zumeta-Dube, Inti; Arevalo-Niño, Katiushka; Cabral-Romero, Claudio

    2013-01-01

    Multiresistance among microorganisms to common antimicrobials has become one of the most significant concerns in modern medicine. Nanomaterials are a new alternative to successfully treat the multiresistant microorganisms. Nanostructured materials are used in many fields, including biological sciences and medicine. Recently, it was demonstrated that the bactericidal activity of zero-valent bismuth colloidal nanoparticles inhibited the growth of Streptococcus mutans; however the antimycotic potential of bismuth nanostructured derivatives has not yet been studied. The main objective of this investigation was to analyze the fungicidal activity of bismuth oxide nanoparticles against Candida albicans, and their antibiofilm capabilities. Our results showed that aqueous colloidal bismuth oxide nanoparticles displayed antimicrobial activity against C. albicans growth (reducing colony size by 85%) and a complete inhibition of biofilm formation. These results are better than those obtained with chlorhexidine, nystatin, and terbinafine, the most effective oral antiseptic and commercial antifungal agents. In this work, we also compared the antimycotic activities of bulk bismuth oxide and bismuth nitrate, the precursor metallic salt. These results suggest that bismuth oxide colloidal nanoparticles could be a very interesting candidate as a fungicidal agent to be incorporated into an oral antiseptic. Additionally, we determined the minimum inhibitory concentration for the synthesized aqueous colloidal Bi2O3 nanoparticles.

  5. Bismuth oxide aqueous colloidal nanoparticles inhibit Candida albicans growth and biofilm formation

    PubMed Central

    Hernandez-Delgadillo, Rene; Velasco-Arias, Donaji; Martinez-Sanmiguel, Juan Jose; Diaz, David; Zumeta-Dube, Inti; Arevalo-Niño, Katiushka; Cabral-Romero, Claudio

    2013-01-01

    Multiresistance among microorganisms to common antimicrobials has become one of the most significant concerns in modern medicine. Nanomaterials are a new alternative to successfully treat the multiresistant microorganisms. Nanostructured materials are used in many fields, including biological sciences and medicine. Recently, it was demonstrated that the bactericidal activity of zero-valent bismuth colloidal nanoparticles inhibited the growth of Streptococcus mutans; however the antimycotic potential of bismuth nanostructured derivatives has not yet been studied. The main objective of this investigation was to analyze the fungicidal activity of bismuth oxide nanoparticles against Candida albicans, and their antibiofilm capabilities. Our results showed that aqueous colloidal bismuth oxide nanoparticles displayed antimicrobial activity against C. albicans growth (reducing colony size by 85%) and a complete inhibition of biofilm formation. These results are better than those obtained with chlorhexidine, nystatin, and terbinafine, the most effective oral antiseptic and commercial antifungal agents. In this work, we also compared the antimycotic activities of bulk bismuth oxide and bismuth nitrate, the precursor metallic salt. These results suggest that bismuth oxide colloidal nanoparticles could be a very interesting candidate as a fungicidal agent to be incorporated into an oral antiseptic. Additionally, we determined the minimum inhibitory concentration for the synthesized aqueous colloidal Bi2O3 nanoparticles. PMID:23637533

  6. Efficient water-splitting device based on a bismuth vanadate photoanode and thin-film silicon solar cells.

    PubMed

    Han, Lihao; Abdi, Fatwa F; van de Krol, Roel; Liu, Rui; Huang, Zhuangqun; Lewerenz, Hans-Joachim; Dam, Bernard; Zeman, Miro; Smets, Arno H M

    2014-10-01

    A hybrid photovoltaic/photoelectrochemical (PV/PEC) water-splitting device with a benchmark solar-to-hydrogen conversion efficiency of 5.2% under simulated air mass (AM) 1.5 illumination is reported. This cell consists of a gradient-doped tungsten-bismuth vanadate (W:BiVO4 ) photoanode and a thin-film silicon solar cell. The improvement with respect to an earlier cell that also used gradient-doped W:BiVO4 has been achieved by simultaneously introducing a textured substrate to enhance light trapping in the BiVO4 photoanode and further optimization of the W gradient doping profile in the photoanode. Various PV cells have been studied in combination with this BiVO4 photoanode, such as an amorphous silicon (a-Si:H) single junction, an a-Si:H/a-Si:H double junction, and an a-Si:H/nanocrystalline silicon (nc-Si:H) micromorph junction. The highest conversion efficiency, which is also the record efficiency for metal oxide based water-splitting devices, is reached for a tandem system consisting of the optimized W:BiVO4 photoanode and the micromorph (a-Si:H/nc-Si:H) cell. This record efficiency is attributed to the increased performance of the BiVO4 photoanode, which is the limiting factor in this hybrid PEC/PV device, as well as better spectral matching between BiVO4 and the nc-Si:H cell.

  7. Structure, defects, and strain in silicon-silicon oxide interfaces

    SciTech Connect

    Kovačević, Goran Pivac, Branko

    2014-01-28

    The structure of the interfaces between silicon and silicon-oxide is responsible for proper functioning of MOSFET devices while defects in the interface can deteriorate this function and lead to their failure. In this paper we modeled this interface and characterized its defects and strain. MD simulations were used for reconstructing interfaces into a thermodynamically stable configuration. In all modeled interfaces, defects were found in the form of three-coordinated silicon atom, five coordinated silicon atom, threefold-coordinated oxygen atom, or displaced oxygen atom. Three-coordinated oxygen atom can be created if dangling bonds on silicon are close enough. The structure and stability of three-coordinated silicon atoms (P{sub b} defect) depend on the charge as well as on the electric field across the interface. The negatively charged P{sub b} defect is the most stable one, but the electric field resulting from the interface reduces that stability. Interfaces with large differences in periodic constants of silicon and silicon oxide can be stabilized by buckling of silicon layer. The mechanical stress resulted from the interface between silicon and silicon oxide is greater in the silicon oxide layer. Ab initio modeling of clusters representing silicon and silicon oxide shows about three time larger susceptibility to strain in silicon oxide than in silicon if exposed to the same deformation.

  8. Stable high conductivity ceria/bismuth oxide bilayered electrolytes

    SciTech Connect

    Wachsman, E.D.; Jayaweera, P.; Jiang, N.; Lowe, D.M.; Pound, B.G.

    1997-01-01

    The authors have developed a high conductivity bilayered ceria/bismuth oxide anolyte/electrolyte that uses the Po{sub 2} gradient to obtain stability at the anolyte-electrolyte interface and reduced electronic conduction due to the electrolyte region. Results in terms of solid oxide fuel cell (SOFC) performance and stability are presented. These results include a 90 to 160 mV increase in open-circuit potential, depending on temperature, with the bilayered structure as compared to SOFCs fabricated from a single ceria layer. An open-circuit potential of >1.0 V was obtained at 500 C with the bilayered structure. This increase in open-circuit potential is obtained without any measurable increase in cell resistance and is stable for over 1,400 h of testing, under both open-circuit and maximum power conditions. Moreover, SOFCs fabricated from the bilayered structure result in a 33% greater power density as compared to cells with a single ceria electrolyte layer.

  9. Growth of silicon bump induced by swift heavy ion at the silicon oxide-silicon interface

    SciTech Connect

    Carlotti, J.-F.; Touboul, A.D.; Ramonda, M.; Caussanel, M.; Guasch, C.; Bonnet, J.; Gasiot, J.

    2006-01-23

    Thin silicon oxide layers on silicon substrates are investigated by scanning probe microscopy before and after irradiation with 210 MeV Au+ ions. After irradiation and complete chemical etching of the silicon oxide layer, silicon bumps grown on the silicon surface are observed. It is shown that each impinging ion induces one silicon bump at the interface. This observation is consistent with the thermal spike theory. Ion energy loss is transferred to the oxide and induces local melting. Silicon-bump formation is favored when the oxide and oxide-silicon interface are silicon rich.

  10. Oxidation mechanism of formic acid on the bismuth adatom-modified Pt(111) surface.

    PubMed

    Perales-Rondón, Juan Victor; Ferre-Vilaplana, Adolfo; Feliu, Juan M; Herrero, Enrique

    2014-09-24

    In order to improve catalytic processes, elucidation of reaction mechanisms is essential. Here, supported by a combination of experimental and computational results, the oxidation mechanism of formic acid on Pt(111) electrodes modified by the incorporation of bismuth adatoms is revealed. In the proposed model, formic acid is first physisorbed on bismuth and then deprotonated and chemisorbed in formate form, also on bismuth, from which configuration the C-H bond is cleaved, on a neighbor Pt site, yielding CO2. It was found computationally that the activation energy for the C-H bond cleavage step is negligible, which was also verified experimentally.

  11. Investigation of solution-processed bismuth-niobium-oxide films

    SciTech Connect

    Inoue, Satoshi; Ariga, Tomoki; Matsumoto, Shin; Onoue, Masatoshi; Miyasako, Takaaki; Tokumitsu, Eisuke; Shimoda, Tatsuya; Chinone, Norimichi; Cho, Yasuo

    2014-10-21

    The characteristics of bismuth-niobium-oxide (BNO) films prepared using a solution process were investigated. The BNO film annealed at 550°C involving three phases: an amorphous phase, Bi₃NbO₇ fluorite microcrystals, and Nb-rich cubic pyrochlore microcrystals. The cubic pyrochlore structure, which was the main phase in this film, has not previously been reported in BNO films. The relative dielectric constant of the BNO film was approximately 140, which is much higher than that of a corresponding film prepared using a conventional vacuum sputtering process. Notably, the cubic pyrochlore microcrystals disappeared with increasing annealing temperature and were replaced with triclinic β-BiNbO₄ crystals at 590°C. The relative dielectric constant also decreased with increasing annealing temperature. Therefore, the high relative dielectric constant of the BNO film annealed at 550°C is thought to result from the BNO cubic pyrochlore structure. In addition, the BNO films annealed at 500°C contained approximately 6.5 atm.% carbon, which was lost at approximately 550°C. This result suggests that the carbon in the BNO film played an important role in the formation of the cubic pyrochlore structure.

  12. Heat capacity, enthalpy and entropy of ternary bismuth tantalum oxides

    NASA Astrophysics Data System (ADS)

    Leitner, J.; Jakeš, V.; Sofer, Z.; Sedmidubský, D.; Růžička, K.; Svoboda, P.

    2011-02-01

    Heat capacity and enthalpy increments of ternary bismuth tantalum oxides Bi 4Ta 2O 11, Bi 7Ta 3O 18 and Bi 3TaO 7 were measured by the relaxation time method (2-280 K), DSC (265-353 K) and drop calorimetry (622-1322 K). Temperature dependencies of the molar heat capacity in the form Cpm =445.8+0.005451 T-7.489×10 6/ T2 J K -1 mol -1, Cpm =699.0+0.05276 T-9.956×10 6/ T2 J K -1 mol -1 and Cpm =251.6+0.06705 T-3.237×10 6/ T2 J K -1 mol -1 for Bi 3TaO 7, Bi 4Ta 2O 11 and for Bi 7Ta 3O 18, respectively, were derived by the least-squares method from the experimental data. The molar entropies at 298.15 K, S° m(298.15 K)=449.6±2.3 J K -1 mol -1 for Bi 4Ta 2O 11, S° m(298.15 K)=743.0±3.8 J K -1 mol -1 for Bi 7Ta 3O 18 and S° m(298.15 K)=304.3±1.6 J K -1 mol -1 for Bi 3TaO 7, were evaluated from the low-temperature heat capacity measurements.

  13. Reduction of thermal conductivity of bulk nanostructured bismuth telluride composites embedded with silicon nano-inclusions

    NASA Astrophysics Data System (ADS)

    Satyala, Nikhil; Tahmasbi Rad, Armin; Zamanipour, Zahra; Norouzzadeh, Payam; Krasinski, Jerzy S.; Tayebi, Lobat; Vashaee, Daryoosh

    2014-01-01

    Bulk nanostructured bismuth telluride (Bi2Te3) composite with silicon nano-crystallite inclusions was synthesized via sintering approach. The effect of the composite structure formed by the addition of miniscule quantity (5 at. %) of silicon on the thermoelectric properties of bulk nanostructured Bi2Te3 is shown via a 50% drop in thermal conductivity accompanied with a simultaneous enhancement in the Seebeck coefficient. We demonstrate that the addition of silicon nano-inclusions to the nanostructured compound combined with a systematic thermal treatment beneficially reduces the thermal conductivity to less than 1.0 W/mK over the entire temperature range of 300 K to 525 K. It is shown that the combinatorial techniques of nanostructuring, nano-inclusions, and annealing are effective in reducing thermal conductivity by a significant magnitude. This low thermal conductivity is comparable to that of Bi2Te3 based superlattices and significantly lower than that of bulk Bi2Te3. The technique is extendable to (Bi,Se)2(Sb,Te)3 based thermoelectric alloys for enhancing the figure-of-merit.

  14. A Ferroelectric Oxide Made Directly on Silicon

    DTIC Science & Technology

    2009-04-17

    Issues of Complex, Epitaxial Oxide Growth and Integration with Silicon by Molecular Beam Epitaxy (Pennsylvania State University, University Park, 2002...Ferroelectric Oxide Made Directly on Silicon Maitri P. Warusawithana,1 Cheng Cen,2 Charles R. Sleasman,2 Joseph C. Woicik,3 Yulan Li,4 Lena Fitting...Schlom1* Metal oxide semiconductor field-effect transistors, formed using silicon dioxide and silicon, have undergone four decades of staggering

  15. Oxide Control for Silicon Crystal Growth

    NASA Technical Reports Server (NTRS)

    Wehrli, H. A. I.

    1982-01-01

    Web dendrite growth process pulls sheet of newly crystallized silicon from molten silicon. Jets of argon pull outside gas into melt cavity, preventing silicon oxide from passing through heat-shield hold and depositing on it. Generated by aspirators, reversed flow is used in web dendrite process, which produces sheets of single-crystal silicon for low-cost solar cells.

  16. Effect of Bi 2O 3 on physical, optical and structural properties of boron silicon bismuthate glasses

    NASA Astrophysics Data System (ADS)

    Gao, Guojun; Hu, Lili; Fan, Huiyan; Wang, Guonian; Li, Kefeng; Feng, Suya; Fan, Sijun; Chen, Huiyu

    2009-11-01

    The lead-free boron silicon bismuthate glasses were investigated in terms of their physical, optical and structural properties. The physical properties of these glasses have been explored by compositional variation of X-ray diffraction (XRD), differential thermal analysis (DTA) and density. The optical properties of theses glasses have been investigated by UV-Vis and mid-infrared transmittance spectra, and refractive index. The structure of these glasses has been characterized by infrared (IR) absorption and Raman spectra.

  17. Structure-Composition-Property Relationships of Complex Bismuth Oxide Based Photocatalysts

    SciTech Connect

    Vogt, Thomas

    2014-01-08

    Development of a new family of up- and down-conversion materials based on oxtfluorides that can potentially increase photocatalytic activities of photocatalysts such as bismuth oxides and can also be used as phosphors in Al1-xGaxN-based devices and solar devices.

  18. Analysis of the color alteration and radiopacity promoted by bismuth oxide in calcium silicate cement.

    PubMed

    Marciano, Marina Angélica; Estrela, Carlos; Mondelli, Rafael Francisco Lia; Ordinola-Zapata, Ronald; Duarte, Marco Antonio Hungaro

    2013-01-01

    The aim of the study was to determine if the increase in radiopacity provided by bismuth oxide is related to the color alteration of calcium silicate-based cement. Calcium silicate cement (CSC) was mixed with 0%, 15%, 20%, 30% and 50% of bismuth oxide (BO), determined by weight. Mineral trioxide aggregate (MTA) was the control group. The radiopacity test was performed according to ISO 6876/2001. The color was evaluated using the CIE system. The assessments were performed after 24 hours, 7 and 30 days of setting time, using a spectrophotometer to obtain the ΔE, Δa, Δb and ΔL values. The statistical analyses were performed using the Kruskal-Wallis/Dunn and ANOVA/Tukey tests (p<0.05). The cements in which bismuth oxide was added showed radiopacity corresponding to the ISO recommendations (>3 mm equivalent of Al). The MTA group was statistically similar to the CSC/30% BO group (p>0.05). In regard to color, the increase of bismuth oxide resulted in a decrease in the ΔE value of the calcium silicate cement. The CSC group presented statistically higher ΔE values than the CSC/50% BO group (p<0.05). The comparison between 24 hours and 7 days showed higher ΔE for the MTA group, with statistical differences for the CSC/15% BO and CSC/50% BO groups (p<0.05). After 30 days, CSC showed statistically higher ΔE values than CSC/30% BO and CSC/50% BO (p<0.05). In conclusion, the increase in radiopacity provided by bismuth oxide has no relation to the color alteration of calcium silicate-based cements.

  19. Efficient solar water splitting by enhanced charge separation in a bismuth vanadate-silicon tandem photoelectrode.

    PubMed

    Abdi, Fatwa F; Han, Lihao; Smets, Arno H M; Zeman, Miro; Dam, Bernard; van de Krol, Roel

    2013-01-01

    Metal oxides are generally very stable in aqueous solutions and cheap, but their photochemical activity is usually limited by poor charge carrier separation. Here we show that this problem can be solved by introducing a gradient dopant concentration in the metal oxide film, thereby creating a distributed n(+)-n homojunction. This concept is demonstrated with a low-cost, spray-deposited and non-porous tungsten-doped bismuth vanadate photoanode in which carrier-separation efficiencies of up to 80% are achieved. By combining this state-of-the-art photoanode with an earth-abundant cobalt phosphate water-oxidation catalyst and a double- or single-junction amorphous Si solar cell in a tandem configuration, stable short-circuit water-splitting photocurrents of ~4 and 3 mA cm(-2), respectively, are achieved under 1 sun illumination. The 4 mA cm(-2) photocurrent corresponds to a solar-to-hydrogen efficiency of 4.9%, which is the highest efficiency yet reported for a stand-alone water-splitting device based on a metal oxide photoanode.

  20. Efficient solar water splitting by enhanced charge separation in a bismuth vanadate-silicon tandem photoelectrode

    NASA Astrophysics Data System (ADS)

    Abdi, Fatwa F.; Han, Lihao; Smets, Arno H. M.; Zeman, Miro; Dam, Bernard; van de Krol, Roel

    2013-07-01

    Metal oxides are generally very stable in aqueous solutions and cheap, but their photochemical activity is usually limited by poor charge carrier separation. Here we show that this problem can be solved by introducing a gradient dopant concentration in the metal oxide film, thereby creating a distributed n+-n homojunction. This concept is demonstrated with a low-cost, spray-deposited and non-porous tungsten-doped bismuth vanadate photoanode in which carrier-separation efficiencies of up to 80% are achieved. By combining this state-of-the-art photoanode with an earth-abundant cobalt phosphate water-oxidation catalyst and a double- or single-junction amorphous Si solar cell in a tandem configuration, stable short-circuit water-splitting photocurrents of ~4 and 3 mA cm-2, respectively, are achieved under 1 sun illumination. The 4 mA cm-2 photocurrent corresponds to a solar-to-hydrogen efficiency of 4.9%, which is the highest efficiency yet reported for a stand-alone water-splitting device based on a metal oxide photoanode.

  1. Method of forming buried oxide layers in silicon

    DOEpatents

    Sadana, Devendra Kumar; Holland, Orin Wayne

    2000-01-01

    A process for forming Silicon-On-Insulator is described incorporating the steps of ion implantation of oxygen into a silicon substrate at elevated temperature, ion implanting oxygen at a temperature below 200.degree. C. at a lower dose to form an amorphous silicon layer, and annealing steps to form a mixture of defective single crystal silicon and polycrystalline silicon or polycrystalline silicon alone and then silicon oxide from the amorphous silicon layer to form a continuous silicon oxide layer below the surface of the silicon substrate to provide an isolated superficial layer of silicon. The invention overcomes the problem of buried isolated islands of silicon oxide forming a discontinuous buried oxide layer.

  2. Photoluminescence and electrical properties of silicon oxide and silicon nitride superlattices containing silicon nanocrystals

    NASA Astrophysics Data System (ADS)

    Shuleiko, D. V.; Ilin, A. S.

    2016-08-01

    Photoluminescence and electrical properties of superlattices with thin (1 to 5 nm) alternating silicon-rich silicon oxide or silicon-rich silicon nitride, and silicon oxide or silicon nitride layers containing silicon nanocrystals prepared by plasma-enhanced chemical vapor deposition with subsequent annealing were investigated. The entirely silicon oxide based superlattices demonstrated photoluminescence peak shift due to quantum confinement effect. Electrical measurements showed the hysteresis effect in the vicinity of zero voltage due to structural features of the superlattices from SiOa93/Si3N4 and SiN0.8/Si3N4 layers. The entirely silicon nitride based samples demonstrated resistive switching effect, comprising an abrupt conductivity change at about 5 to 6 V with current-voltage characteristic hysteresis. The samples also demonstrated efficient photoluminescence with maximum at ∼1.4 eV, due to exiton recombination in silicon nanocrystals.

  3. High ionic conductivity in confined bismuth oxide-based heterostructures

    NASA Astrophysics Data System (ADS)

    Sanna, Simone; Esposito, Vincenzo; Christensen, Mogens; Pryds, Nini

    2016-12-01

    Bismuth trioxide in the cubic fluorite phase ( δ - Bi 2 O 3 ) exhibits the highest oxygen ionic conductivity. In this study, we were able to stabilize the pure δ - Bi 2 O 3 at low temperature with no addition of stabilizer but only by engineering the interface, using highly coherent heterostructures made of alternative layers of δ - Bi 2 O 3 and Yttria Stabilized Zirconia (YSZ), deposited by pulsed laser deposition. The resulting [ δ - Bi 2 O 3 / YSZ ] heterostructures are found to be stable over a wide temperature range (500-750 °C) and exhibits stable high ionic conductivity over a long time comparable to the value of the pure δ - Bi 2 O 3 , which is approximately two orders of magnitude higher than the conductivity of YSZ bulk.

  4. Separation of Americium in High Oxidation States from Curium Utilizing Sodium Bismuthate.

    PubMed

    Richards, Jason M; Sudowe, Ralf

    2016-05-03

    A simple separation of americium from curium would support closure of the nuclear fuel cycle, assist in nuclear forensic analysis, and allow for more accurate measurement of neutron capture properties of (241)Am. Methods for the separation of americium from curium are however complicated and time-consuming due to the similar chemical properties of these elements. In this work a novel method for the separation of americium from curium in nitric acid media was developed using sodium bismuthate to perform both the oxidation and separation. Sodium bismuthate is shown to be a promising material for performing a simple and rapid separation. Curium is more strongly retained than americium on the undissolved sodium bismuthate at nitric acid concentrations below 1.0 M. A separation factor of ∼90 was obtained in 0.1 M nitric acid. This separation factor is achieved within the first minute of contact and is maintained for at least 2 h of contact. Separations using sodium bismuthate were performed using solid-liquid extraction as well as column chromatography.

  5. Synthesis of α-Bismuth oxide using solution combustion method and its photocatalytic properties

    NASA Astrophysics Data System (ADS)

    Astuti, Y.; Fauziyah, A.; Nurhayati, S.; Wulansari, A. D.; Andianingrum, R.; Hakim, A. R.; Bhaduri, G.

    2016-02-01

    The monoclinic bismuth oxide was prepared by the solution combustion method using bismuthyl nitrate as the raw material and citric acid as fuel. The synthesis process consisted of the formation of a clear transparent solution and the formation of white powder after heating the mixture at 250 °C for 2 hours. The yellow pale crystalline materials were obtained after calcination of the white powder at 600 °C for 80 minutes. Furthermore, the photocatalytic activity of the product was also studied using methyl orange as a model pollutant. The result showed that the coral reef-like bismuth oxide was able to degrade 50 mL methyl orange (5 ppm) by 37.8% within 12 hours irradiation using 75-watt tungsten lamp.

  6. Fast oxygen diffusion in bismuth oxide probed by quasielastic neutron scattering

    DOE PAGES

    Mamontov, Eugene

    2016-09-24

    In this paper, we present the first, to our knowledge, study of solid state oxygen translational diffusion by quasielastic neutron scattering. Such studies in the past might have been precluded by relatively low diffusivities of oxygen anions in the temperature range amenable to neutron scattering experiments. To explore the potential of the quasielastic scattering technique, which can deduce atomic diffusion jump length of oxygen anions through the momentum transfer dependence of the scattering signal, we have selected the fastest known oxygen conductor, bismuth oxide. Finally, we have found the oxygen anion jump length in excellent agreement with the nearest oxygen-vacancymore » distance in the anion sublattice of the fluorite-related structure of bismuth oxide.« less

  7. Fast oxygen diffusion in bismuth oxide probed by quasielastic neutron scattering

    SciTech Connect

    Mamontov, Eugene

    2016-09-24

    In this paper, we present the first, to our knowledge, study of solid state oxygen translational diffusion by quasielastic neutron scattering. Such studies in the past might have been precluded by relatively low diffusivities of oxygen anions in the temperature range amenable to neutron scattering experiments. To explore the potential of the quasielastic scattering technique, which can deduce atomic diffusion jump length of oxygen anions through the momentum transfer dependence of the scattering signal, we have selected the fastest known oxygen conductor, bismuth oxide. Finally, we have found the oxygen anion jump length in excellent agreement with the nearest oxygen-vacancy distance in the anion sublattice of the fluorite-related structure of bismuth oxide.

  8. Phonon-coupled trap-assisted charge injection in metal-nitride-oxide-silicon/silicon-oxide-nitride-oxide-silicon structures

    NASA Astrophysics Data System (ADS)

    Nasyrov, K. A.; Shaimeev, S. S.; Gritsenko, V. A.; Han, J. H.

    2009-06-01

    A phonon-coupled trap model is proposed for trap-assisted injection mechanism in silicon-oxide-nitride-oxide-silicon (SONOS)/metal-nitride-oxide-silicon (MNOS) structures at low voltages. On the basis of this model, a theory of charge injection in SONOS/MNOS has been developed. Charge injection experimental data was fitted by this theory. Obtained trap parameters are close to those previously reported [K. A. Nasyrov et al., J. Appl. Phys. 96, 4293 (2004)], where the current dependence on temperature and electric field was investigated in MNOS.

  9. The fabrication and thermal properties of bismuth-aluminum oxide nanothermometers

    NASA Astrophysics Data System (ADS)

    Wang, Chiu-Yen; Chen, Shih-Hsun; Tsai, Ping-Hsin; Chiou, Chung-Han; Hsieh, Sheng-Jen

    2017-01-01

    Bismuth (Bi) nanowires, well controlled in length and diameter, were prepared by using an anodic aluminum oxide (AAO) template-assisted molding injection process with a high cooling rate. A high performance atomic layer deposition (ALD)-capped bismuth-aluminum oxide (Bi-Al2O3) nanothermometer is demonstrated that was fabricated via a facile, low-cost and low-temperature method, including AAO templated-assisted molding injection and low-temperature ALD-capped processes. The thermal behaviors of Bi nanowires and Bi-Al2O3 nanocables were studied by in situ heating transmission electron microscopy. Linear thermal expansion of liquid Bi within native bismuth oxide nanotubes and ALD-capped Bi-Al2O3 nanocables were evaluated from 275 °C to 700 °C and 300 °C to 1000 °C, respectively. The results showed that the ALD-capped Bi-Al2O3 nanocable possesses the highest working temperature, 1000 °C, and the broadest operation window, 300 °C-1000 °C, of a thermal-expanding type nanothermometer. Our innovative approach provides another way of fabricating core-shell nanocables and to further achieve sensing local temperature under an extreme high vacuum environment.

  10. Effect of additions of praseodymium and bismuth oxides on the properties of barium hexaferrites

    SciTech Connect

    Kirichok, P.P.; Garmash, V.Y.; Verezhak, O.F.; Voronina, N.B.

    1985-08-01

    Among oxide permanent magnets, of greatest practical interest are those made of barium hexaferrite. Because of its high constant of uniaxial anisotropy, a barium ferrite can be employed for producing permanent magnets of large coercive force. The formation of important technical properties in barium ferrites is strongly affected by their production technology, in particular, the addition of oxides, such as those or bismuth and some rare-earth elements. The goal of this work was to study the effect of bismuth and praseodymium on the parameters of the static hysteresis loop, magnetic microstructure, and electronic configuration of iron ions in the BaO.nFe/sub 2/O/sub 3/ (5.0 less than or equal tonless than or equal to6.0) system. It is determined that the changes induced in the crystallostructural parameters, magnetic microstructure, and electronic spectrum of a barium ferrite by the addition of praseodymium and bismuth oxides to the ferrite powder charge control to a large extent the formation of the magnetic energy level.

  11. Influence of the ionization-energy losses of high-energy bismuth ions on the development of helium blisters in silicon

    SciTech Connect

    Reutov, V. F. Dmitriev, S. N.; Sohatsky, A. S.; Zaluzhnyi, A. G.

    2015-10-15

    Understanding the behavior of helium in solids under conditions of intense ionizing radiation is of particular interest in solving many problems of nuclear, fusion, and space materials science and also in microelectronics. The observed effect of suppressing the formation of helium blisters on the surface of helium ion-doped silicon as a result of irradiation with high-energy bismuth ions is reported in this publication. It is suggested that a possible decrease in the concentration of helium atoms in silicon is due to their radiationinduced desorption from the area of doping in terms of the high-impact ionization of bismuth ions.

  12. High performance zirconia-bismuth oxide nanocomposite electrolytes for lower temperature solid oxide fuel cells

    NASA Astrophysics Data System (ADS)

    Joh, Dong Woo; Park, Jeong Hwa; Kim, Do Yeub; Yun, Byung-Hyun; Lee, Kang Taek

    2016-07-01

    We develop a novel nanocomposite electrolyte, consisting of yttria-stabilized zirconia (YSZ) and erbia-stabilized bismuth oxide (ESB). The 20 mol% ESB-incorporated YSZ composite (20ESB-YSZ) achieves the high density (>97%) at the low sintering temperature of 800 °C. The microstructural analysis of 20ESB-YSZ reveals the characteristic nanocomposite structure of the highly percolated ESB phase at the YSZ grain boundaries (a few ∼ nm thick). The ionic conductivity of 20ESB-YSZ is increased by 5 times compared to that of the conventional YSZ due to the fast oxygen ion transport along the ESB phase. Moreover, this high conductivity is maintained up to 580 h, indicating high stability of the ESB-YSZ nanocomposite. In addition, the oxygen reduction reaction at the composite electrolyte/cathode interface is effectively enhanced (∼70%) at the temperature below 650 °C, mainly due to the fast dissociative oxygen adsorption on the ESB surface as well as the rapid oxygen ion incorporation into the ESB lattice. Thus, we believe this ESB-YSZ nanocomposite is a promising electrolyte for high performance solid oxide fuel cells at reduced temperatures.

  13. Defect chemistry and charge transport properties of mixed bismuth oxides with layer lattices

    NASA Astrophysics Data System (ADS)

    Palanduz, Ahmet Cengiz

    Undoped SrBi2Ta2O9 (SBT) displays a broad ionic conductivity plateau and p-type conductivity at lower and higher oxygen activities, respectively, which is consistent with an oxide that has a net acceptor center concentration of 1--2%. Undoped SrBi2Nb 2O9 (SBN) displays n-type conductivity behaviour that is consistent with that of an oxide which has a net donor center concentration of 1--2% SBN also undergoes an unprecedented abrupt conductivity rise at very low oxygen activities. Recent structural studies indicate that there is substantial place exchange between Bi3+ and Sr2+ in the alternating layers of the structure and that there is significant distortion of Ta (Nb) octahedral environment. In a crystal with a 'homogeneous' unit cell the cation place exchange would be self-compensating. Defect chemistry studies suggest that in SBN and SBT, where there are two distinct layers, Bi ˙Sr and Sr 'Bi are locally compensated by strontium vacancies in the perovskite-like layers and by oxygen vacancies in the bismuth oxide layers, respectively. In SBT, where electron density is low due to its large band gap, oxygen vacancies in the bismuth oxide layers dominate the total conductivity. In SBN, which due to its easier reducibility is expected to have a lower band gap, n-type conductivity prevails. SBN displays thermally activated electron mobility. Superior ferroelectric fatigue resistance of SBT is attributed to the following: (i) large band gap and (ii) heavy donor presence suppress electron and oxygen vacancy formation in the perovskite-like layers; (iii) electron mobility is thermally activated; (iv) oxygen vacancies in the bismuth oxide layers can not enter the perovskite-like layer. Thus there are no mobile defects that could drift to the domain walls and pin their movement.

  14. Bismuth germanate coupled to near ultraviolet silicon photomultipliers for time-of-flight PET

    NASA Astrophysics Data System (ADS)

    Kwon, Sun Il; Gola, Alberto; Ferri, Alessandro; Piemonte, Claudio; Cherry, Simon R.

    2016-09-01

    Bismuth germanate (BGO) was a very attractive scintillator in early-generation positron emission tomography (PET) scanners. However, the major disadvantages of BGO are lower light yield and longer rise and decay time compared to currently popular scintillators such as LSO and LYSO. This results in poorer coincidence timing resolution and it has generally been assumed that BGO is not a suitable scintillator for time-of-flight (TOF) PET applications. However, when a 511 keV photon interacts in a scintillator, a number of Cerenkov photons are produced promptly by energetic electrons released by photoelectric or Compton interactions. If these prompt photons can be captured, they could provide a better timing trigger for PET. Since BGO has a high refractive index (increasing the Cerenkov light yield) and excellent optical transparency down to 320 nm (Cerenkov light yield is higher at shorter wavelengths), we hypothesized that the coincidence timing resolution of BGO can be significantly improved by efficient detection of the Cerenkov photons. However, since the number of Cerenkov photons is far less than the number of scintillation photons, and they are more abundant in the UV and blue part of the spectrum, photosensors need to have high UV/blue sensitivity, fast temporal response, and very low noise in order to trigger on the faint Cerenkov signal. In this respect, NUV-HD silicon photomultipliers (SiPMs) (FBK, Trento, Italy) are an excellent fit for our approach. In this study, coincidence events were measured using BGO crystals coupled with NUV-HD SiPMs. The existence and influence of Cerenkov photons on the timing measurements were studied using different configurations to exploit the directionality of the Cerenkov emissions. Coincidence resolving time values (FWHM) of ~270 ps from 2  ×  3  ×  2 mm3 BGO crystals and ~560 ps from 3  ×  3  ×  20 mm3 BGO crystals were obtained. To our knowledge, these are the best

  15. Synthesis and photocatalytic properties of bismuth titanate with different structures via oxidant peroxo method (OPM).

    PubMed

    Nogueira, André E; Longo, Elson; Leite, Edson R; Camargo, Emerson R

    2014-02-01

    Bismuth titanate (Bi4Ti3O12 and Bi12TiO20) powders were synthesized by the Oxidant Peroxide Method (OPM), and the effect of temperatures on physical and chemical properties of particles was investigated. The results showed that the morphology and average particle size of materials can be successfully controlled by adjusting the temperature. The samples after calcination were characterized by X-ray diffractometry, transmission electron microscopy, diffuse reflectance spectroscopy, Raman spectroscopy, and BET isotherms. The photocatalytic activity of materials was also evaluated by studying the degradation of 10ppm aqueous rhodamine B dye under ultraviolet radiation.

  16. Concentration dependences of elastooptic coefficients of germanate glasses containing lead and bismuth oxides

    SciTech Connect

    Rabukhin, A.I.

    1995-11-01

    Concentration dependences of elastooptic coefficients of lead - bismuth - germanate glasses with compositions from virtually the entire range of glass formation in the system PbO-Bi{sub 2}O{sub 3}-GeO{sub 2} are investigated. Partial elastooptic coefficients of the oxide ingredients of the investigated glasses are determined. The results are interpreted with consideration of the nature of the elastooptic interaction in glasses subjected to uniaxial stress. The data can be used for designing compositions of optical media for the light and acoustic lines of acoustooptical devices.

  17. Effect of Bismuth Oxide on the Microstructure and Electrical Conductivity of Yttria Stabilized Zirconia

    PubMed Central

    Liu, Liwei; Zhou, Zheng; Tian, He; Li, Jixue

    2016-01-01

    Bismuth oxide (Bi2O3)-doped yttria-stabilized zirconia (YSZ) were prepared via the solid state reaction method. X-ray diffraction and electron diffraction spectroscopy results indicate that doping with 2 mol% Bi2O3 and adding 10 mol% yttria result in a stable zirconia cubic phase. Adding Bi2O3 as a dopant increases the density of zirconia to above 96%, while reducing its normal sintering temperature by approximately 250 °C. Moreover, electrical impedance analyses show that adding Bi2O3 enhances the conductivity of zirconia, improving its capability as a solid electrolyte for intermediate or even lower temperatures. PMID:26985895

  18. Oxide driven strength evolution of silicon surfaces

    DOE PAGES

    Grutzik, Scott J.; Milosevic, Erik; Boyce, Brad L.; ...

    2015-11-19

    Previous experiments have shown a link between oxidation and strength changes in single crystal silicon nanostructures but provided no clues as to the mechanisms leading to this relationship. Using atomic force microscope-based fracture strength experiments, molecular dynamics modeling, and measurement of oxide development with angle resolved x-ray spectroscopy we study the evolution of strength of silicon (111) surfaces as they oxidize and with fully developed oxide layers. We find that strength drops with partial oxidation but recovers when a fully developed oxide is formed and that surfaces intentionally oxidized from the start maintain their high initial strengths. MD simulations showmore » that strength decreases with the height of atomic layer steps on the surface. These results are corroborated by a completely separate line of testing using micro-scale, polysilicon devices, and the slack chain method in which strength recovers over a long period of exposure to the atmosphere. Lastly, combining our results with insights from prior experiments we conclude that previously described strength decrease is a result of oxidation induced roughening of an initially flat silicon (1 1 1) surface and that this effect is transient, a result consistent with the observation that surfaces flatten upon full oxidation.« less

  19. Oxide driven strength evolution of silicon surfaces

    SciTech Connect

    Grutzik, Scott J.; Milosevic, Erik; Boyce, Brad L.; Zehnder, Alan T.

    2015-11-19

    Previous experiments have shown a link between oxidation and strength changes in single crystal silicon nanostructures but provided no clues as to the mechanisms leading to this relationship. Using atomic force microscope-based fracture strength experiments, molecular dynamics modeling, and measurement of oxide development with angle resolved x-ray spectroscopy we study the evolution of strength of silicon (111) surfaces as they oxidize and with fully developed oxide layers. We find that strength drops with partial oxidation but recovers when a fully developed oxide is formed and that surfaces intentionally oxidized from the start maintain their high initial strengths. MD simulations show that strength decreases with the height of atomic layer steps on the surface. These results are corroborated by a completely separate line of testing using micro-scale, polysilicon devices, and the slack chain method in which strength recovers over a long period of exposure to the atmosphere. Lastly, combining our results with insights from prior experiments we conclude that previously described strength decrease is a result of oxidation induced roughening of an initially flat silicon (1 1 1) surface and that this effect is transient, a result consistent with the observation that surfaces flatten upon full oxidation.

  20. Synthesis of yttria-doped bismuth oxide powder by carbonate coprecipitation for IT-SOFC electrolyte.

    PubMed

    Lee, J G; Kim, S H; Yoon, H H

    2011-01-01

    Yttria-doped bismuth oxide (YBO) powders were synthesized by ammonium carbonate coprecipitation for the preparation of electrolytes of an intermediate temperature solid oxide fuel cell (IT-SOFC). The starting salts were yttrium and bismuth nitrate. The crystal structures and the morphological characteristics of the particles were analyzed by XRD and SEM, respectively. The ionic conductivity of the sintered pellet was measured by an electrochemical impedance analyzer. The size of the calcined YBO powders were in the range of 20-100 nm as measured by SEM images. The YBO pellets had a face-centered cubic structure, and their crystallite size was about 54-88 nm. The ionic conductivity of the YBO pellets sintered at 800 degrees C was observed to be 2.7 x 10(-1) Scm-(-1) at 700 degrees C. The ball-milling of the YBO powder before it was pelletized was found to have been unrequired probably because of a good sinterability of the YBO powders that was prepared via the ammonium carbonate coprecipitation method. The results showed that the ammonium carbonate coprecipitation process could be used as the cost-efficient method of producing YBO electrolytes for IT-SOFC.

  1. Oxidation mechanism of T91 steel in liquid lead-bismuth eutectic: with consideration of internal oxidation

    PubMed Central

    Ye, Zhongfei; Wang, Pei; Dong, Hong; Li, Dianzhong; Zhang, Yutuo; Li, Yiyi

    2016-01-01

    Clarification of the microscopic events that occur during oxidation is of great importance for understanding and consequently controlling the oxidation process. In this study the oxidation product formed on T91 ferritic/martensitic steel in oxygen saturated liquid lead-bismuth eutectic (LBE) at 823 K was characterized at the nanoscale using focused-ion beam and transmission electron microscope. An internal oxidation zone (IOZ) under the duplex oxide scale has been confirmed and characterized systematically. Through the microscopic characterization of the IOZ and the inner oxide layer, the micron-scale and nano-scale diffusion of Cr during the oxidation in LBE has been determined for the first time. The micron-scale diffusion of Cr ensures the continuous advancement of IOZ and inner oxide layer, and nano-scale diffusion of Cr gives rise to the typical appearance of the IOZ. Finally, a refined oxidation mechanism including the internal oxidation and the transformation of IOZ to inner oxide layer is proposed based on the discussion. The proposed oxidation mechanism succeeds in bridging the gap between the existing models and experimental observations. PMID:27734928

  2. Oxidation mechanism of T91 steel in liquid lead-bismuth eutectic: with consideration of internal oxidation

    NASA Astrophysics Data System (ADS)

    Ye, Zhongfei; Wang, Pei; Dong, Hong; Li, Dianzhong; Zhang, Yutuo; Li, Yiyi

    2016-10-01

    Clarification of the microscopic events that occur during oxidation is of great importance for understanding and consequently controlling the oxidation process. In this study the oxidation product formed on T91 ferritic/martensitic steel in oxygen saturated liquid lead-bismuth eutectic (LBE) at 823 K was characterized at the nanoscale using focused-ion beam and transmission electron microscope. An internal oxidation zone (IOZ) under the duplex oxide scale has been confirmed and characterized systematically. Through the microscopic characterization of the IOZ and the inner oxide layer, the micron-scale and nano-scale diffusion of Cr during the oxidation in LBE has been determined for the first time. The micron-scale diffusion of Cr ensures the continuous advancement of IOZ and inner oxide layer, and nano-scale diffusion of Cr gives rise to the typical appearance of the IOZ. Finally, a refined oxidation mechanism including the internal oxidation and the transformation of IOZ to inner oxide layer is proposed based on the discussion. The proposed oxidation mechanism succeeds in bridging the gap between the existing models and experimental observations.

  3. Incorporation of thiosemicarbazide in Amberlite IRC-50 for separation of astatine from alpha-irradiated bismuth oxide.

    PubMed

    Roy, Kamalika; Basu, S; Ramaswami, A; Nayak, Dalia; Lahiri, Susanta

    2004-06-01

    A chelating resin was synthesized by incorporating thiosemicarbazide into Amberlite IRC-50, a weakly acidic polymer. Astatine radionuclides produced by alpha-irradiating bismuth oxide were separated using the newly synthesized chelating resin. The resin showed high selectivity for astatine. The adsorbed astatine was recovered using 0.1M EDTA at pH approximately 10.

  4. Silicon Carbide Nanotube Oxidation at High Temperatures

    NASA Technical Reports Server (NTRS)

    Ahlborg, Nadia; Zhu, Dongming

    2012-01-01

    Silicon Carbide Nanotubes (SiCNTs) have high mechanical strength and also have many potential functional applications. In this study, SiCNTs were investigated for use in strengthening high temperature silicate and oxide materials for high performance ceramic nanocomposites and environmental barrier coating bond coats. The high · temperature oxidation behavior of the nanotubes was of particular interest. The SiCNTs were synthesized by a direct reactive conversion process of multiwall carbon nanotubes and silicon at high temperature. Thermogravimetric analysis (TGA) was used to study the oxidation kinetics of SiCNTs at temperatures ranging from 800degC to1300degC. The specific oxidation mechanisms were also investigated.

  5. Hydrothermal synthesis and crystal structure of a new lithium copper bismuth oxide, LiCuBiO4

    NASA Astrophysics Data System (ADS)

    Kumada, Nobuhiro; Nakamura, Ayumi; Miura, Akira; Takei, Takahiro; Azuma, Masaki; Yamamoto, Hajime; Magome, Eisuke; Moriyoshi, Chikako; Kuroiwa, Yoshihiro

    2017-01-01

    A new lithium copper bismuth oxide, LiCuBiO4 was prepared by hydrothermal reaction using NaBiO30.1*4H2O. The crystal structural model of this compound was refined by using synchrotron X-ray powder diffraction data. This bismuthate has the LiCuSbO4 related structure with the orthorhombic cell (Space group: Pnma) of a=10.9096(9), b=5.8113(5) and c=5.0073(4) Å, and the final R-factors were Rwp=4.84 and Rp=3.58%. This compound is the first example of a lithium copper bismuthate containing Bi5+. An antiferromagnetic ordering of Cu2+ moment was observed at 6 K.

  6. Luminescence from Erbium Oxide Grown on Silicon

    DTIC Science & Technology

    2002-01-01

    H9.14 Luminescence from erbium oxide grown on silicon E. Nogales’, B. Mrndez , J.Piqueras’, R.Plugaru2 , J. A. Garcfa3 and T. J. Tate4 ’ Universidad ... Complutense de Madrid, Dpto. Ffsica de Materiales, 28040 Madrid, Spain.2Inst. of Microtechnology, Bucharest, Romania.3Universidad del Pais Vasco, Dpto

  7. Crystal Orientation Control of Bismuth Layer-Structured Dielectric Films Using Interface Layers of Perovskite-Type Oxides

    NASA Astrophysics Data System (ADS)

    Kondoh, Yohta; Sasajima, Keiichi; Hayashi, Mari; Kimura, Junichi; Takuwa, Itaru; Ehara, Yoshitaka; Funakubo, Hiroshi; Uchida, Hiroshi

    2011-09-01

    Thin films of SrBi4Ti4O15, a kind of bismuth layer-structured dielectrics (BLSDs), were prepared on platinized silicon wafers buffered by perovskite-type oxide interface layers, (100)LaNiO3/(111)Pt/TiO2/(100)Si and (001)Ca2Nb3O10-nanosheets/(111)Pt/TiO2/(100)Si, by chemical solution deposition (CSD). The Ca2Nb3O10 nanosheets were supported on a (111)Pt/TiO2/(100)Si substrate by dip coating using an aqueous dispersion, while (100)LaNiO3 was prepared by CSD. The (00l) planes of BLSD crystal were preferentially oriented on the surface of both substrates, which is caused by suitable lattice matching between the a-(b-)axis of BLSD and perovskite-type oxide layers. The film deposition on (001)Ca2Nb3O10 nanosheets yielded (001)-oriented BLSD films with higher crystallinity and smaller fluctuation in the tilting angle of the (001)BLSD plane than those on the (100)LaNiO3 interface layer. The dielectric constant (ɛr) of (001)-oriented SrBi4Ti4O15 film on (001)Ca2Nb3O10-nanosheets/(111)Pt/TiO2/(100)Si substrate was approximately 190, which was significantly stable against the change of frequency and bias voltage compared with that of the randomly-oriented SrBi4Ti4O15 film.

  8. Silicon carbide-silicon composite having improved oxidation resistance and method of making

    NASA Technical Reports Server (NTRS)

    Luthra, Krishan Lal (Inventor); Wang, Hongyu (Inventor)

    1999-01-01

    A Silicon carbide-silicon matrix composite having improved oxidation resistance at high temperatures in dry or water-containing environments is provided. A method is given for sealing matrix cracks in situ in melt infiltrated silicon carbide-silicon matrix composites. The composite cracks are sealed by the addition of various additives, such as boron compounds, into the melt infiltrated silicon carbide-silicon matrix.

  9. Method of making silicon carbide-silicon composite having improved oxidation resistance

    NASA Technical Reports Server (NTRS)

    Luthra, Krishan Lal (Inventor); Wang, Hongyu (Inventor)

    2002-01-01

    A Silicon carbide-silicon matrix composite having improved oxidation resistance at high temperatures in dry or water-containing environments is provided. A method is given for sealing matrix cracks in situ in melt infiltrated silicon carbide-silicon matrix composites. The composite cracks are sealed by the addition of various additives, such as boron compounds, into the melt infiltrated silicon carbide-silicon matrix.

  10. Breakdown mechanism in buried silicon oxide films

    NASA Astrophysics Data System (ADS)

    Mayo, Santos; Suehle, John S.; Roitman, Peter

    1993-09-01

    Charge injection leading to catastrophic breakdown has been used to study the dielectric properties of the buried oxide layer in silicon implanted with high-energy oxygen ions. Current versus gate bias, current versus time, and capacitance versus gate bias were used to characterize, at various temperatures, MOS metal-oxide-semiconductor capacitors with areas in the 1×10-4-1×10-2 cm2 range fabricated with commercially available single- or triple-implant separation by implanted oxygen silicon wafers. The data show that injected charge accumulates in the buried oxide at donorlike oxide traps ultimately leading to catastrophic breakdown. Both Poole-Frenkel and Fowler-Nordheim conduction, as well as impact-ionization mechanisms, have been identified in the oxide. The charge and field to breakdown in the best buried oxides are, respectively, near 1 C cm-2 and 10 MV cm-1, similar to the thermally grown oxide parameters. Cumulative distributions of these parameters measured over a large number of capacitors show that the frequency of breakdown events caused by extrinsic defects is scaled with the capacitor area. Intrinsic and extrinsic defect distributions are broader than with thermally grown oxides.

  11. Tailoring Silicon Oxycarbide Glasses for Oxidative Stability

    NASA Technical Reports Server (NTRS)

    Hurwitz, F. I.; Meador, M. A. B.

    1997-01-01

    Blackglas(Trademark) polysiloxane systems produce silicon oxycarbide glasses by pyrolysis in inert atmosphere. The silicon oxycarbides evidence oxidative degradation that limits their lifetime as composite matrices. The present study characterizes bonding rearrangements in the oxycarbide network accompanying increases in pyrolysis temperature. It also addresses the changes in susceptibility to oxidation due to variations in the distribution of Si bonded species obtained under different processing conditions. The study is carried out using Si-29 nuclear magnetic resonance (NMR) spectroscopy and a design of experiments approach to model the oxidation behavior. The NMR results are compared with those obtained by thermogravimetric analysis (TGA). Samples pyrolyzed under inert conditions are compared to those pyrolyzed in reactive ammonia environments.

  12. Preparation of superhydrophobic silicon oxide nanowire surfaces.

    PubMed

    Coffinier, Yannick; Janel, Sébastien; Addad, Ahmed; Blossey, Ralf; Gengembre, Léon; Payen, Edmond; Boukherroub, Rabah

    2007-02-13

    The paper reports on the preparation of superhydrophobic amorphous silicon oxide nanowires (a-SiONWs) on silicon substrates with a contact angle greater than 150 degrees by means of surface roughness and self-assembly. Nanowires with an average mean diameter in the range 20-150 nm and 15-20 microm in length were obtained by the so-called solid-liquid-solid (SLS) technique. The porous nature and the high roughness of the resulting surfaces were confirmed by AFM imaging. The superhydrophobicity resulted from the combined effects of surface roughness and chemical modification with fluorodecyl trichlorosilane.

  13. Genotoxic effects of Bismuth (III) oxide nanoparticles by Allium and Comet assay.

    PubMed

    Liman, Recep

    2013-09-01

    Genotoxic effects of Bismuth (III) oxide nanoparticles (BONPs) were investigated on the root cells of Allium cepa by Allium and Comet assay. A. cepa roots were treated with the aqueous dispersions of BONPs at five different concentrations (12.5, 25, 50, 75, and 100ppm) for 4h. Exposure of BONPs significantly increased mitotic index (MI) except 12.5ppm, total chromosomal aberrations (CAs) in Allium test. While stickiness chromosome laggards, disturbed anaphase-telophase and anaphase bridges were observed in anaphase-telophase cells, pro-metaphase and c-metaphase in other cells. A significant increase in DNA damage was also observed at all concentrations of BONPs except 12.5ppm by Comet assay. The results were also analyzed statistically by using SPSS for Windows; Duncan's multiple range test was performed. These results indicate that BONPs exhibit genotoxic activity in A. cepa root meristematic cells.

  14. Broadly tunable multiwavelength fiber laser with bismuth-oxide EDF using large effective area fiber

    NASA Astrophysics Data System (ADS)

    Ramzia Salem, A. M.; Al-Mansoori, M. H.; Hizam, H.; Mohd Noor, S. B.; Mahdi, M. A.

    2011-02-01

    A multiwavelength laser comb using 2.49 m Bismuth-oxide erbium-doped fiber (Bi-EDF) with different lengths of large effective area fiber (LEAF) in a ring cavity configuration is realized. The Bi-EDF is used as the linear gain medium and LEAF is used as the non-linear gain medium for stimulated Brillouin scattering. Out of the four different lengths, the longest length of 25 km LEAF exhibits the widest tuning range of 44 nm (1576 to 1620 nm) in the L-band at 264 mW pump power and 5 mW Brillouin pump power. In addition, a total of 15 output channels are achieved with total average output power of -8 dBm from this laser structure. All Brillouin Stokes signals exhibit high peak power of above -20 dBm per signal and their optical signal-to-noise ratio of greater than 15 dB.

  15. Silica substrate or portion formed from oxidation of monocrystalline silicon

    DOEpatents

    Matzke, Carolyn M.; Rieger, Dennis J.; Ellis, Robert V.

    2003-07-15

    A method is disclosed for forming an inclusion-free silica substrate using a monocrystalline silicon substrate as the starting material and oxidizing the silicon substrate to convert it entirely to silica. The oxidation process is performed from both major surfaces of the silicon substrate using a conventional high-pressure oxidation system. The resulting product is an amorphous silica substrate which is expected to have superior etching characteristics for microfabrication than conventional fused silica substrates. The present invention can also be used to convert only a portion of a monocrystalline silicon substrate to silica by masking the silicon substrate and locally thinning a portion the silicon substrate prior to converting the silicon portion entirely to silica. In this case, the silica formed by oxidizing the thinned portion of the silicon substrate can be used, for example, as a window to provide optical access through the silicon substrate.

  16. Bismuth Subsalicylate

    MedlinePlus

    Pink Bismuth® ... Bismuth subsalicylate is used to treat diarrhea, heartburn, and upset stomach in adults and children 12 years of age and older. Bismuth subsalicylate is in a class of medications called ...

  17. Chemical and photochemical functionality of the first molecular bismuth vanadium oxide.

    PubMed

    Tucher, Johannes; Nye, Leanne C; Ivanovic-Burmazovic, Ivana; Notarnicola, Antonio; Streb, Carsten

    2012-08-27

    Anionic metal oxide clusters, so-called polyoxometalates, can be developed as molecular model compounds to mimic the chemical and photochemical reactivity of solid-state metal oxides on the molecular level. Inspired by the well-known visible-light photocatalyst BiVO(4), the first molecular bismuth vanadium oxide has been synthesized to investigate the chemical and photochemical similarities between the solid-state and molecular compounds. The cluster H(3)[(Bi(dmso)(3))(4)V(13)O(40)]·ca. 4 DMSO was obtained from simple precursors in almost quantitative yield. Structural analysis showed that the cluster shell is based on the unusual all-vanadium ε-Keggin framework [ε-V(12)O(40)](15-), which is stabilized by coordination of four Bi(III) centers. The acidic character of the three cluster protons was demonstrated by titration studies. The cluster shows promising photocatalytic properties in visible-light photooxidation reactions and has high activity (turnover number >1200), high quantum yield (Φ=7.6 %), and good recyclability, which make it a promising first example of a new class of heterometallic polyoxometalates.

  18. Visible light photooxidative performance of a high-nuclearity molecular bismuth vanadium oxide cluster

    PubMed Central

    Tucher, Johannes

    2014-01-01

    Summary The visible light photooxidative performance of a new high-nuclearity molecular bismuth vanadium oxide cluster, H3[{Bi(dmso)3}4V13O40], is reported. Photocatalytic activity studies show faster reaction kinetics under anaerobic conditions, suggesting an oxygen-dependent quenching of the photoexcited cluster species. Further mechanistic analysis shows that the reaction proceeds via the intermediate formation of hydroxyl radicals which act as oxidant. Trapping experiments using ethanol as a hydroxyl radical scavenger show significantly decreased photocatalytic substrate oxidation in the presence of EtOH. Photocatalytic performance analyses using monochromatic visible light irradiation show that the quantum efficiency Φ for indigo photooxidation is strongly dependent on the irradiation wavelength, with higher quantum efficiencies being observed at shorter wavelengths (Φ395nm ca. 15%). Recycling tests show that the compound can be employed as homogeneous photooxidation catalyst multiple times without loss of catalytic activity. High turnover numbers (TON ca. 1200) and turnover frequencies up to TOF ca. 3.44 min−1 are observed, illustrating the practical applicability of the cluster species. PMID:24991508

  19. Bismuth-catalyzed and doped silicon nanowires for one-pump-down fabrication of radial junction solar cells.

    PubMed

    Yu, Linwei; Fortuna, Franck; O'Donnell, Benedict; Jeon, Taewoo; Foldyna, Martin; Picardi, Gennaro; Roca i Cabarrocas, Pere

    2012-08-08

    Silicon nanowires (SiNWs) are becoming a popular choice to develop a new generation of radial junction solar cells. We here explore a bismuth- (Bi-) catalyzed growth and doping of SiNWs, via vapor-liquid-solid (VLS) mode, to fabricate amorphous Si radial n-i-p junction solar cells in a one-pump-down and low-temperature process in a single chamber plasma deposition system. We provide the first evidence that catalyst doping in the SiNW cores, caused by incorporating Bi catalyst atoms as n-type dopant, can be utilized to fabricate radial junction solar cells, with a record open circuit voltage of V(oc) = 0.76 V and an enhanced light trapping effect that boosts the short circuit current to J(sc) = 11.23 mA/cm(2). More importantly, this bi-catalyzed SiNW growth and doping strategy exempts the use of extremely toxic phosphine gas, leading to significant procedure simplification and cost reduction for building radial junction thin film solar cells.

  20. Influence of bismuth oxide concentration on the pH level and biocompatibility of white Portland cement

    PubMed Central

    MARCIANO, Marina Angélica; GARCIA, Roberto Brandão; CAVENAGO, Bruno Cavalini; MINOTTI, Paloma Gagliardi; MIDENA, Raquel Zanin; GUIMARÃES, Bruno Martini; ORDINOLA-ZAPATA, Ronald; DUARTE, Marco Antonio Hungaro

    2014-01-01

    Objectives To investigate if there is a relation between the increase of bismuth oxide and the decrease of pH levels and an intensification of toxicity in the Portland cement. Material and Methods White Portland cement (WPC) was mixed with 0, 15, 20, 30 and 50% bismuth oxide, in weight. For the pH level test, polyethylene tubes were filled with the cements and immersed in Milli-Q water for 15, 30 and 60 days. After each period, the increase of the pH level was assessed. For the biocompatibility, two polyethylene tubes filled with the cements were implanted in ninety albino rats (n=6). The analysis of the intensity of the inflammatory infiltrate was performed after 15, 30 and 60 days. The statistical analysis was performed using the Kruskal-Wallis, Dunn and Friedman tests for the pH level and the Kruskal-Wallis and Dunn tests for the biological analysis (p<0.05). Results The results showed an increase of the pH level after 15 days, followed by a slight increase after 30 days and a decrease after 60 days. There were no significant statistical differences among the groups (p>0.05). For the inflammatory infiltrates, no significant statistical differences were found among the groups in each period (p>0.05). The 15% WPC showed a significant decrease of the inflammatory infiltrate from 15 to 30 and 60 days (p<0.05). Conclusions The addition of bismuth oxide into Portland cement did not affect the pH level and the biological response. The concentration of 15% of bismuth oxide resulted in significant reduction in inflammatory response in comparison with the other concentrations evaluated. PMID:25141197

  1. Development of tellurium oxide and lead-bismuth oxide glasses for mid-wave infra-red transmission optics

    NASA Astrophysics Data System (ADS)

    Zhou, Beiming; Rapp, Charles F.; Driver, John K.; Myers, Michael J.; Myers, John D.; Goldstein, Jonathan; Utano, Rich; Gupta, Shantanu

    2013-03-01

    Heavy metal oxide glasses exhibiting high transmission in the Mid-Wave Infra-Red (MWIR) spectrum are often difficult to manufacture in large sizes with optimized physical and optical properties. In this work, we researched and developed improved tellurium-zinc-barium and lead-bismuth-gallium heavy metal oxide glasses for use in the manufacture of fiber optics, optical components and laser gain materials. Two glass families were investigated, one based upon tellurium and another based on lead-bismuth. Glass compositions were optimized for stability and high transmission in the MWIR. Targeted glass specifications included low hydroxyl concentration, extended MWIR transmission window, and high resistance against devitrification upon heating. Work included the processing of high purity raw materials, melting under controlled dry Redox balanced atmosphere, finning, casting and annealing. Batch melts as large as 4 kilograms were sprue cast into aluminum and stainless steel molds or temperature controlled bronze tube with mechanical bait. Small (100g) test melts were typically processed in-situ in a 5%Au°/95%Pt° crucible. Our group manufactured and evaluated over 100 different experimental heavy metal glass compositions during a two year period. A wide range of glass melting, fining, casting techniques and experimental protocols were employed. MWIR glass applications include remote sensing, directional infrared counter measures, detection of explosives and chemical warfare agents, laser detection tracking and ranging, range gated imaging and spectroscopy. Enhanced long range mid-infrared sensor performance is optimized when operating in the atmospheric windows from ~ 2.0 to 2.4μm, ~ 3.5 to 4.3μm and ~ 4.5 to 5.0μm.

  2. Thermoelectrics from silicon nanoparticles: the influence of native oxide

    NASA Astrophysics Data System (ADS)

    Petermann, Nils; Stötzel, Julia; Stein, Niklas; Kessler, Victor; Wiggers, Hartmut; Theissmann, Ralf; Schierning, Gabi; Schmechel, Roland

    2015-06-01

    Thermoelectric materials were synthesized by current-assisted sintering of doped silicon nanoparticles produced in a microwave-plasma reactor. Due to their affinity to oxygen, the nanoparticles start to oxidize when handled in air and even a thin surface layer of native silicon oxide leads to a significant increase in the oxide volume ratio. This results in a considerable incorporation of oxygen into the sintered pellets, thus affecting the thermoelectric performance. To investigate the necessity of inert handling of the raw materials, the thermoelectric transport properties of sintered nanocrystalline silicon samples were characterized with respect to their oxygen content. An innovative method allowing a quantitative silicon oxide analysis by means of electron microscopy was applied: the contrast between areas of high and low electrical conductivity was attributed to the silicon matrix and silicon oxide precipitates, respectively. Thermoelectric characterization revealed that both, electron mobility and thermal conductivity decrease with increasing silicon oxide content. A maximum figure of merit with zT = 0.45 at 950 °C was achieved for samples with a silicon oxide mass fraction of 9.5 and 21.4% while the sample with more than 25% of oxygen clearly indicates a negative impact of the oxygen on the electron mobility. Contribution to the Topical Issue "Silicon and Silicon-related Materials for Thermoelectricity", edited by Dario Narducci.

  3. Enhancing the Performance of the Rechargeable Iron Electrode in Alkaline Batteries with Bismuth Oxide and Iron Sulfide Additives

    SciTech Connect

    Manohar, AK; Yang, CG; Malkhandi, S; Prakash, GKS; Narayanan, SR

    2013-09-07

    Iron-based alkaline rechargeable batteries have the potential of meeting the needs of large-scale electrical energy storage because of their low-cost, robustness and eco-friendliness. However, the widespread commercial deployment of iron-based batteries has been limited by the low charging efficiency and the poor discharge rate capability of the iron electrode. In this study, we have demonstrated iron electrodes containing bismuth oxide and iron sulfide with a charging efficiency of 92% and capable of being discharged at the 3C rate. Such a high value of charging efficiency combined with the ability to discharge at high rates is being reported for the first time. The bismuth oxide additive led to the in situ formation of elemental bismuth and a consequent increase in the overpotential for the hydrogen evolution reaction leading to an increase in the charging efficiency. We observed that the sulfide ions added to the electrolyte and iron sulfide added to the electrode mitigated-electrode passivation and allowed for continuous discharge at high rates. At the 3C discharge rate, a utilization of 0.2 Ah/g was achieved. The performance level of the rechargeable iron electrode demonstrated here is attractive for designing economically-viable large-scale energy storage systems based on alkaline nickel-iron and iron-air batteries. (C) 2013 The Electrochemical Society. All rights reserved.

  4. Adaptive behaviour of silicon oxide memristive nanostructures

    NASA Astrophysics Data System (ADS)

    Korolev, D. S.; Mikhaylov, A. N.; Belov, A. I.; Sergeev, V. A.; Antonov, I. N.; Gorshkov, O. N.; Tetelbaum, D. I.

    2016-08-01

    The response to electrical pulses of various parameters has been studied for the CMOS-compatible memristive nanostructures on the basis of silicon oxide demonstrating reproducible resistive switching. It is established that an increase in the amplitude or width of a single programming pulse is followed by the gradual decrease in the device resistivity. By applying periodic pulse sequences of different polarity it is possible to obtain both lower and higher resistance states. This adaptive behavior is analogous to synaptic plasticity and considered as one of the main conditions for the application of memristive devices in neuromorphic systems and synaptic electronics.

  5. Guided photoluminescence study of Nd-doped silicon rich silicon oxide and silicon rich silicon nitride waveguides

    NASA Astrophysics Data System (ADS)

    Pirasteh, Parastesh; Charrier, Joël; Dumeige, Yannick; Doualan, Jean-Louis; Camy, Patrice; Debieu, Olivier; Liang, Chuan-hui; Khomenkova, Larysa; Lemaitre, Jonathan; Boucher, Yann G.; Gourbilleau, Fabrice

    2013-07-01

    Planar waveguides made of Nd3+-doped silicon rich silicon oxide (SRSO) and silicon rich silicon nitride (SRSN) have been fabricated by reactive magnetron sputtering and characterized with special emphasis on the comparison of the guided photoluminescence (PL) properties of these two matrices. Guided fluorescence excited by top surface pumping at 488 nm on planar waveguides was measured as a function of the distance between the excitation area and the output of the waveguide, as well as a function of the pump power density. The PL intensity increased linearly with pump power without any saturation even at high power. The linear intensity increase of the Nd3+ guided PL under a non-resonant excitation (488 nm) confirms the efficient coupling between either Si-np and rare-earth ions for SRSO or radiative defects and rare earth ions for SRSN. The guided fluorescences at 945 and 1100 nm were observed until 4 mm and 8 mm of the output of the waveguide for Nd3+ doped SRSO and SRSN waveguides, respectively. The guided fluorescence decays of Nd3+-doped-SRSO and -SRSN planar waveguides have been measured and found equal to 97 μs ±7 and 5 μs ± 2, respectively. These results show notably that the Nd3+-doped silicon rich silicon oxide is a very promising candidate on the way to achieve a laser cavity at 1.06 μm.

  6. Progress in bismuth vanadate photoanodes for use in solar water oxidation.

    PubMed

    Park, Yiseul; McDonald, Kenneth J; Choi, Kyoung-Shin

    2013-03-21

    Harvesting energy directly from sunlight as nature accomplishes through photosynthesis is a very attractive and desirable way to solve the energy challenge. Many efforts have been made to find appropriate materials and systems that can utilize solar energy to produce chemical fuels. One of the most viable options is the construction of a photoelectrochemical cell that can reduce water to H(2) or CO(2) to carbon-based molecules. Bismuth vanadate (BiVO(4)) has recently emerged as a promising material for use as a photoanode that oxidizes water to O(2) in these cells. Significant advancement in the understanding and construction of efficient BiVO(4)-based photoanode systems has been made within a short period of time owing to various newly developed ideas and approaches. In this review, the crystal and electronic structures that are closely related to the photoelectrochemical properties of BiVO(4) are described first, and the photoelectrochemical properties and limitations of BiVO(4) are examined. Subsequently, the latest efforts toward addressing these limitations in order to improve the performances of BiVO(4)-based photoanodes are discussed. These efforts include morphology control, formation of composite structures, composition tuning, and coupling oxygen evolution catalysts. The discussions and insights provided in this review reflect the most recent approaches and directions for general photoelectrode developments and they will be directly applicable for the understanding and improvement of other photoelectrode systems.

  7. Boron-Doped Strontium-Stabilized Bismuth Cobalt Oxide Thermoelectric Nanocrystalline Ceramic Powders Synthesized via Electrospinning

    NASA Astrophysics Data System (ADS)

    Koçyiğit, Serhat; Aytimur, Arda; Çınar, Emre; Uslu, İbrahim; Akdemir, Ahmet

    2014-01-01

    Boron-doped strontium-stabilized bismuth cobalt oxide thermoelectric nanocrystalline ceramic powders were produced by using a polymeric precursor technique. The powders were characterized by using x-ray diffraction (XRD), scanning electron microscopy (SEM), and physical properties measurement system (PPMS) techniques. The XRD results showed that these patterns have a two-phase mixture. The phases are face-centered cubic (fcc) and body-centered cubic (bcc). Values of the crystallite size, dislocation density, and microstrain were calculated by using the Scherrer equation. The lattice parameters were calculated for fcc and bcc phases. The SEM results showed that needle-like grains are formed in boron-undoped composite materials, but the needle-like grains changed to the plate-like grains with the addition of boron. The distribution of the nanofiber diameters was calculated and the average diameter of the boron-doped sample is smaller than the boron-undoped one. PPMS values showed that the electrical resistivity values decreased, but the thermal conductivity values, the Seebeck coefficients, and figure of merit ( ZT) increased with increasing temperature for the two samples.

  8. Ultrafast laser functionalized rare phased gold-silicon/silicon oxide nanostructured hybrid biomaterials.

    PubMed

    Premnath, P; Tan, B; Venkatakrishnan, K

    2015-12-01

    We introduce a hybrid nanostructured biomaterial that is a combination of rare phases of immiscible gold and silicon oxide, functionalized via ultrafast laser synthesis. For the first time, we show cancer controlling properties of rare phases of gold silicides, which include Au7Si, Au5Si, Au0.7Si2.3 and Au8Si2. Conventionally, pure forms of gold and silicon/silicon oxide are extensively employed in targeted therapy and drug delivery systems due to their unique properties. While silicon and silicon oxide nanoparticles have shown biocompatibility, gold nanoparticles show conflicting results based on their size and material properties. Several studies have shown that gold and silicon combinations produce cell controlling properties, however, these studies were not able to produce a homogenous combination of gold and silicon, owing to its immiscibility. A homogenous combination of gold and silicon may potentially enable properties that have not previously been reported. We describe rare phased gold-silicon oxide nanostructured hybrid biomaterials and its unique cancer controlling properties, owing to material properties, concentration, size and density. The gold-silicon oxide nanostructured hybrid is composed of individual gold-silicon oxide nanoparticles in various concentrations of gold and silicon, some nanoparticles possess a gold-core and silicon-shell like structure. The individual nanoparticles are bonded together forming a three dimensional nanostructured hybrid. The interaction of the nanostructured hybrids with cervical cancer cells showed a 96% reduction in 24h. This engineered nanostructured hybrid biomaterial presents significant potential due to the combination of immiscible gold and silicon oxide in varying phases and can potentially satiate the current vacuum in cancer therapy.

  9. The Active Oxidation of Silicon Carbide

    NASA Technical Reports Server (NTRS)

    Jacobson, Nathan S.; Myers, Dwight L.

    2009-01-01

    The high temperature oxidation of silicon carbide occurs in two very different modes. Passive oxidation forms a protective oxide film which limits further attack of the SiC: SiC(s) + 3/2 O2(g) = SiO2(s) + CO(g) Active oxidation forms a volatile oxide and may lead to extensive attack of the SiC: SiC(s) + O2(g) = SiO(g) + CO(g) Generally passive oxidation occurs at higher oxidant pressures and active oxidation occurs at lower oxidant pressures and elevated temperatures. Active oxidation is a concern for reentry, where the flight trajectory involves the latter conditions. Thus the transition points and rates of active oxidation are a major concern. Passive/active transitions have been studied by a number of investigators. An examination of the literature indicates many questions remain regarding the effect of impurity, the hysteresis of the transition (i.e. the difference between active-to-passive and passive-toactive), and the effect of total pressure. In this study we systematically investigate each of these effects. Experiments were done in both an alumina furnace tube and a quartz furnace tube. It is known that alumina tubes release impurities such as sodium and increase the kinetics in the passive region [1]. We have observed that the active-to-passive transition occurs at a lower oxygen pressure when the experiment is conducted in alumina tubes and the resultant passive silica scale contains sodium. Thus the tests in this study are conducted in quartz tubes. The hysteresis of the transition has been discussed in the detail in the original theoretical treatise of this problem for pure silicon by Wagner [2], yet there is little mention of it in subsequent literature. Essentially Wagner points out that the active-to-passive transition is governed by the criterion for a stable Si/SiO2 equilibria and the passive-to-active transition is governed by the decomposition of the SiO2 film. A series of experiments were conducted for active-to-passive and passive

  10. Producing bismuth trioxide and its application in fire assaying

    NASA Astrophysics Data System (ADS)

    Kelly, Zack; Ojebuoboh, Funsho

    2002-04-01

    Bismuth trioxide (Bi2O3) is the prevalent commercial oxide of bismuth. A precursor to the preparation of other compounds of bismuth, including the chemical reagents, bismuth trioxide has specialized uses in optical glass, flame-retardant paper, and, increasingly, in glaze formulations where it substitutes for lead oxides. In the last decade, bismuth trioxide has also become a key ingredient in flux formulations used by mineral analysts in fire assaying. The production of bismuth trioxide generally begins with the minor metal bismuth. This paper describes bismuth trioxide production and the properties and basis for its use in environmentally sound fire assaying.

  11. Infrared Dielectric Properties of Low-Stress Silicon Oxide

    NASA Technical Reports Server (NTRS)

    Cataldo, Giuseppe; Wollack, Edward J.; Brown, Ari D.; Miller, Kevin H.

    2016-01-01

    Silicon oxide thin films play an important role in the realization of optical coatings and high-performance electrical circuits. Estimates of the dielectric function in the far- and mid-infrared regime are derived from the observed transmittance spectrum for a commonly employed low-stress silicon oxide formulation. The experimental, modeling, and numerical methods used to extract the dielectric function are presented.

  12. Structural, electrical and magnetic measurements on oxide layers grown on 316L exposed to liquid lead-bismuth eutectic

    NASA Astrophysics Data System (ADS)

    Hosemann, Peter; Hofer, Christian; Hlawacek, Gregor; Li, Ning; Maloy, Stuart A.; Teichert, Christian

    2012-02-01

    Fast reactors and spallation neutron sources may use lead-bismuth eutectic (LBE) as a coolant. Its physical, chemical, and irradiation properties make it a safe coolant compared to Na cooled designs. However, LBE is a corrosive medium for most steels and container materials. The present study was performed to evaluate the corrosion behavior of the austenitic steel 316L (in two different delivery states). Detailed atomic force microscopy, magnetic force microscopy, conductive atomic force microscopy, and scanning transmission electron microscopy analyses have been performed on the oxide layers to get a better understanding of the corrosion and oxidation mechanisms of austenitic and ferritic/martensitic stainless steel exposed to LBE. The oxide scale formed on the annealed 316L material consisted of multiple layers with different compositions, structures, and properties. The innermost oxide layer maintained the grain structure of what used to be the bulk steel material and shows two phases, while the outermost oxide layer possessed a columnar grain structure.

  13. Synthesis and Characterisation of Reduced Graphene Oxide/Bismuth Composite for Electrodes in Electrochemical Energy Storage Devices.

    PubMed

    Wang, Jiabin; Zhang, Han; Hunt, Michael R C; Charles, Alasdair; Tang, Jie; Bretcanu, Oana; Walker, David; Hassan, Khalil T; Sun, Yige; Šiller, Lidija

    2017-01-20

    A reduced graphene oxide/bismuth (rGO/Bi) composite was synthesized for the first time using a polyol process at a low reaction temperature and with a short reaction time (60 °C and 3 hours, respectively). The as-prepared sample is structured with 20-50 nm diameter bismuth particles distributed on the rGO sheets. The rGO/Bi composite displays a combination of capacitive and battery-like charge storage, achieving a specific capacity value of 773 C g(-1) at a current density of 0.2 A g(-1) when charged to 1 V. The material not only has good power density but also shows moderate stability in cycling tests with current densities as high as 5 A g(-1) . The relatively high abundance and low price of bismuth make this rGO/Bi material a promising candidate for use in electrode materials in future energy storage devices.

  14. Synthesis and Characterisation of Reduced Graphene Oxide/Bismuth Composite for Electrodes in Electrochemical Energy Storage Devices

    PubMed Central

    Wang, Jiabin; Zhang, Han; Hunt, Michael R. C.; Charles, Alasdair; Tang, Jie; Bretcanu, Oana; Walker, David; Hassan, Khalil T.; Sun, Yige

    2017-01-01

    Abstract A reduced graphene oxide/bismuth (rGO/Bi) composite was synthesized for the first time using a polyol process at a low reaction temperature and with a short reaction time (60 °C and 3 hours, respectively). The as‐prepared sample is structured with 20–50 nm diameter bismuth particles distributed on the rGO sheets. The rGO/Bi composite displays a combination of capacitive and battery‐like charge storage, achieving a specific capacity value of 773 C g−1 at a current density of 0.2 A g−1 when charged to 1 V. The material not only has good power density but also shows moderate stability in cycling tests with current densities as high as 5 A g−1. The relatively high abundance and low price of bismuth make this rGO/Bi material a promising candidate for use in electrode materials in future energy storage devices. PMID:28098431

  15. Nature of isomorphism in crystals of bismuth-zinc and bismuth-cadmium double oxides with the sillenite structure

    SciTech Connect

    Kirik, S.D.; Kutvitskii, V.A.; Koryagina, T.I.

    1986-01-01

    The technique of profile analysis of powder patterns (Rietveld's method) is used to investigate the structures of two polycrystalline phases of double oxides belonging to the Sillen phase family and having the composition 6Bi2O3 x ZnO and 5BI2O3 x 3CdO. On the basis of the results of the refinement the authors discuss the causes leading to the observed composition, which is richer in the second oxide than traditional sillenites. In these cases incorporation of atoms of the stabilizing element in the structure of el-Bi2O3 occurs both in the tetrahedral positions and in the semioctahedra of the metal atoms.

  16. Structural, electrical, and thermoelectric properties of bismuth telluride: Silicon/carbon nanocomposites thin films

    NASA Astrophysics Data System (ADS)

    Agarwal, Khushboo; Mehta, B. R.

    2014-08-01

    In this study, the effect of the presence of secondary phases on the structural, electrical, and thermoelectric properties of nanocomposite Bi2Te3 films prepared by co-sputtering of silicon and carbon with Bi2Te3 has been investigated. Growth temperature and the presence of Si and C phase are observed to have a strong effect on the topography and orientation of crystallites. X-ray diffraction study demonstrates that Bi2Te3 and Bi2Te3:C samples have preferred (0 0 15) orientation in comparison to Bi2Te3:Si sample, which have randomly oriented crystallites. Atomic force, conducting atomic force, and scanning thermal microscopy analysis show significant differences in topographical, electrical, and thermal conductivity contrasts in Bi2Te3:Si and Bi2Te3:C samples. Due to the randomly oriented crystallites and the presence of Si along the crystallite boundaries, appreciable Seebeck coefficient, higher electrical conductivity, and lower thermal conductivity is achieved resulting in relatively higher value of power factor (3.71 mW K-2 m-1) for Bi2Te3:Si sample. This study shows that by incorporating a secondary phase along crystallite boundaries, microstructural, electrical, and thermoelectric properties of the composite samples can be modified.

  17. Structural, electrical, and thermoelectric properties of bismuth telluride: Silicon/carbon nanocomposites thin films

    SciTech Connect

    Agarwal, Khushboo; Mehta, B. R.

    2014-08-28

    In this study, the effect of the presence of secondary phases on the structural, electrical, and thermoelectric properties of nanocomposite Bi{sub 2}Te{sub 3} films prepared by co-sputtering of silicon and carbon with Bi{sub 2}Te{sub 3} has been investigated. Growth temperature and the presence of Si and C phase are observed to have a strong effect on the topography and orientation of crystallites. X-ray diffraction study demonstrates that Bi{sub 2}Te{sub 3} and Bi{sub 2}Te{sub 3}:C samples have preferred (0 0 15) orientation in comparison to Bi{sub 2}Te{sub 3}:Si sample, which have randomly oriented crystallites. Atomic force, conducting atomic force, and scanning thermal microscopy analysis show significant differences in topographical, electrical, and thermal conductivity contrasts in Bi{sub 2}Te{sub 3}:Si and Bi{sub 2}Te{sub 3}:C samples. Due to the randomly oriented crystallites and the presence of Si along the crystallite boundaries, appreciable Seebeck coefficient, higher electrical conductivity, and lower thermal conductivity is achieved resulting in relatively higher value of power factor (3.71 mW K{sup −2} m{sup −1}) for Bi{sub 2}Te{sub 3}:Si sample. This study shows that by incorporating a secondary phase along crystallite boundaries, microstructural, electrical, and thermoelectric properties of the composite samples can be modified.

  18. Dissolution and oxidation behaviour of various austenitic steels and Ni rich alloys in lead-bismuth eutectic at 520 °C

    NASA Astrophysics Data System (ADS)

    Roy, Marion; Martinelli, Laure; Ginestar, Kevin; Favergeon, Jérôme; Moulin, Gérard

    2016-01-01

    Ten austenitic steels and Ni rich alloys were tested in static lead-bismuth eutectic (LBE) at 520 °C in order to obtain a selection of austenitic steels having promising corrosion behaviour in LBE. A test of 1850 h was carried out with a dissolved oxygen concentration between 10-9 and 5 10-4 g kg-1. The combination of thermodynamic of the studied system and literature results leads to the determination of an expression of the dissolved oxygen content in LBE as a function of temperature: RT(K)ln[O](wt%) = -57584/T(K) -55.876T(K) + 254546 (R is the gas constant in J mol-1 K-1). This relation can be considered as a threshold of oxygen content above which only oxidation is observed on the AISI 316L and AISI 304L austenitic alloys in static LBE between 400 °C and 600 °C. The oxygen content during the test leads to both dissolution and oxidation of the samples during the first 190 h and leads to pure oxidation for the rest of the test. Results of mixed oxidation and dissolution test showed that only four types of corrosion behaviour were observed: usual austenitic steels and Ni rich alloys behaviour including the reference alloy 17Cr-12Ni-2.5Mo (AISI 316LN), the 20Cr-31Ni alloy one, the Si containing alloy one and the Al containing alloy one. According to the proposed criteria of oxidation and dissolution kinetics, silicon rich alloys and aluminum rich alloy presented a promising corrosion behaviour.

  19. Selective chemical modification of silicon nitride/silicon oxide nanostructures to develop label-free biosensors.

    PubMed

    Bañuls, María-José; González-Pedro, Victoria; Barrios, Carlos A; Puchades, Rosa; Maquieira, Angel

    2010-02-15

    The selective introduction of functional groups on the surface of silicon nitride/silicon oxide nanostructures was studied. Chemical strategies based on organosilane, Si-H and N-H reactivities were assayed. Among these strategies, the use of glutaraldehyde to selectively immobilize biomolecules only on the silicon nitride part of the chip surface was the most effective for the covalent attachment of proteins, maintaining also their bioavailability. The biomolecule surface coverage results up to 80% and the modification is selective versus silicon oxide; the biomolecule attaching only to silicon nitride and leaving the silicon oxide area of the device unmodified. The effectiveness of our novel selective surface modification procedure is also supported by comparing experimental and numerical calculations of the optical performance of a label-free optical ring resonator based on Si(3)N(4)/SiO(2) slot-waveguides.

  20. Silicon Metal-Oxide-Semiconductor Quantum Devices

    NASA Astrophysics Data System (ADS)

    Nordberg, Eric

    This thesis presents stable quantum dots in a double gated silicon metal-oxide-semiconductor (MOS) system with an open-lateral geometry. In recent years, semiconductor lateral quantum dots have emerged as an appealing approach to quantum computing. Silicon offers the potential for very long electron spin decoherence times in these dots. Several important steps toward a functioning silicon-based electron spin qubit are presented, including stable Coulomb blockade within a quantum dot, a tunable double quantum dot, and integrated charge sensing. A fabrication process has been created to make low-disorder constrictions on relatively high mobility Si-MOS material and to facilitate essentially arbitrary gate geometries. Within this process, changes in mobility and charge defect densities are measured for critical process steps. This data was used to guide the fabrication of devices culminating, in this work, with a clean, stable quantum dot in a double-gated MOS system. Stable Coulomb-blockade behavior showing single-period conductance oscillations was observed in MOS quantum dots. Measured capacitances within each device and capacitances calculated via modeling are compared, showing that the measured Coulomb-blockade is consistent with a lithographically defined quantum dot, as opposed to a disorder dot within a single constriction. A tunable double dot is also observed. Laterally coupled charge sensing of quantum dots is highly desirable because it enables measurement even when conduction through the quantum dot itself is suppressed. Such charge sensing is demonstrated in this system. The current through a point contact constriction located near a quantum dot shows sharp 2% changes corresponding to charge transitions between the dot and a nearby lead. The coupling capacitance between the charge sensor and the quantum dot is extracted and agrees well with a capacitance model of the integrated sensor and quantum dot system.

  1. Investigation of the toxicity of bismuth oxide nanoparticles in various cell lines.

    PubMed

    Abudayyak, Mahmoud; Öztaş, Ezgi; Arici, Merve; Özhan, Gül

    2017-02-01

    Nanoparticles have been drawn attention in various fields ranging from medicine to industry because of their physicochemical properties and functions, which lead to extensive human exposure to nanoparticles. Bismuth (Bi)-based compounds have been commonly used in the industrial, cosmetic and medical applications. Although the toxicity of Bi-based compounds was studied for years, there is a serious lack of information concerning their toxicity and effects in the nanoscale on human health and environment. Therefore, we aimed to investigate the toxic effects of Bi (III) oxide (Bi2O3) nanoparticles in liver (HepG2 hepatocarcinoma cell), kidney (NRK-52E kidney epithelial cell), intestine (Caco-2 colorectal adenocarcinoma cell), and lung (A549 lung carcinoma cell) cell cultures. Bi2O3 nanoparticles (∼149.1 nm) were easily taken by all cells and showed cyto- and genotoxic effects. It was observed that the main cell death pathways were apoptosis in HepG2 and NRK-52E cells and necrosis in A549 and Caco-2 cells exposed to Bi2O3 nanoparticles. Also, the glutathione (GSH), malondialdehyde (MDA), and 8-hydroxy deoxyguanine (8-OHdG) levels were significantly changed in HepG2, NRK-52E, and Caco-2 cells, except A549 cell. The present study is the first to evaluate the toxicity of Bi2O3 nanoparticles in mammalian cells. Bi2O3 nanoparticles should be thoroughly assessed for their potential hazardous effects to human health and the results should be supported with in vivo studies to fully understand the mechanism of their toxicity.

  2. Resistive switches and memories from silicon oxide.

    PubMed

    Yao, Jun; Sun, Zhengzong; Zhong, Lin; Natelson, Douglas; Tour, James M

    2010-10-13

    Because of its excellent dielectric properties, silicon oxide (SiO(x)) has long been used and considered as a passive, insulating component in the construction of electronic devices. In contrast, here we demonstrate resistive switches and memories that use SiO(x) as the sole active material and can be implemented in entirely metal-free embodiments. Through cross-sectional transmission electron microscopy, we determine that the switching takes place through the voltage-driven formation and modification of silicon (Si) nanocrystals (NCs) embedded in the SiO(x) matrix, with SiO(x) itself also serving as the source of the formation of this Si pathway. The small sizes of the Si NCs (d ∼ 5 nm) suggest that scaling to ultrasmall domains could be feasible. Meanwhile, the switch also shows robust nonvolatile properties, high ON/OFF ratios (>10(5)), fast switching (sub-100-ns), and good endurance (10(4) write-erase cycles). These properties in a SiO(x)-based material composition showcase its potentials in constructing memory or logic devices that are fully CMOS compatible.

  3. Nitric oxide-releasing porous silicon nanoparticles

    NASA Astrophysics Data System (ADS)

    Kafshgari, Morteza Hasanzadeh; Cavallaro, Alex; Delalat, Bahman; Harding, Frances J.; McInnes, Steven JP; Mäkilä, Ermei; Salonen, Jarno; Vasilev, Krasimir; Voelcker, Nicolas H.

    2014-07-01

    In this study, the ability of porous silicon nanoparticles (PSi NPs) to entrap and deliver nitric oxide (NO) as an effective antibacterial agent is tested against different Gram-positive and Gram-negative bacteria. NO was entrapped inside PSi NPs functionalized by means of the thermal hydrocarbonization (THC) process. Subsequent reduction of nitrite in the presence of d-glucose led to the production of large NO payloads without reducing the biocompatibility of the PSi NPs with mammalian cells. The resulting PSi NPs demonstrated sustained release of NO and showed remarkable antibacterial efficiency and anti-biofilm-forming properties. These results will set the stage to develop antimicrobial nanoparticle formulations for applications in chronic wound treatment.

  4. Nitric oxide-releasing porous silicon nanoparticles

    PubMed Central

    2014-01-01

    In this study, the ability of porous silicon nanoparticles (PSi NPs) to entrap and deliver nitric oxide (NO) as an effective antibacterial agent is tested against different Gram-positive and Gram-negative bacteria. NO was entrapped inside PSi NPs functionalized by means of the thermal hydrocarbonization (THC) process. Subsequent reduction of nitrite in the presence of d-glucose led to the production of large NO payloads without reducing the biocompatibility of the PSi NPs with mammalian cells. The resulting PSi NPs demonstrated sustained release of NO and showed remarkable antibacterial efficiency and anti-biofilm-forming properties. These results will set the stage to develop antimicrobial nanoparticle formulations for applications in chronic wound treatment. PMID:25114633

  5. Gold-enhanced oxidation of MBE-grown silicon nanowires

    NASA Astrophysics Data System (ADS)

    Büttner, C. C.; Zakharov, N. D.; Pippel, E.; Gösele, U.; Werner, P.

    2008-07-01

    Thermal oxidation of MBE-grown silicon nanowires with a gold droplet on their tips was investigated. Two kinds of oxidation behavior were observed: (i) enhanced axial oxidation, if there was a direct contact between the gold droplet and the nanowire, and (ii) conventional oxidation for nanowires when there was no direct contact between the gold and silicon. For a dry atmosphere, such enhanced oxidation takes place at temperatures down to 500 °C. Under a wet atmosphere, remarkable oxidation was observed even for temperatures down to 250 °C.

  6. Growth of silicon quantum dots by oxidation of the silicon nanocrystals embedded within silicon carbide matrix

    SciTech Connect

    Kole, Arindam; Chaudhuri, Partha

    2014-10-15

    A moderately low temperature (≤800 °C) thermal processing technique has been described for the growth of the silicon quantum dots (Si-QD) within microcrystalline silicon carbide (μc-SiC:H) dielectric thin films deposited by plasma enhanced chemical vapour deposition (PECVD) process. The nanocrystalline silicon grains (nc-Si) present in the as deposited films were initially enhanced by aluminium induced crystallization (AIC) method in vacuum at a temperature of T{sub v} = 525 °C. The samples were then stepwise annealed at different temperatures T{sub a} in air ambient. Analysis of the films by FTIR and XPS reveal a rearrangement of the μc-SiC:H network has taken place with a significant surface oxidation of the nc-Si domains upon annealing in air. The nc-Si grain size (D{sub XRD}) as calculated from the XRD peak widths using Scherrer formula was found to decrease from 7 nm to 4 nm with increase in T{sub a} from 250 °C to 800 °C. A core shell like structure with the nc-Si as the core and the surface oxide layer as the shell can clearly describe the situation. The results indicate that with the increase of the annealing temperature in air the oxide shell layer becomes thicker and the nc-Si cores become smaller until their size reduced to the order of the Si-QDs. Quantum confinement effect due to the SiO covered nc-Si grains of size about 4 nm resulted in a photoluminescence peak due to the Si QDs with peak energy at 1.8 eV.

  7. Laser-induced oxidation kinetics of bismuth surface microdroplets on GaAsBi studied in situ by Raman microprobe analysis.

    PubMed

    Steele, J A; Lewis, R A

    2014-12-29

    We report the cw-laser-induced oxidation of molecular-beam-epitaxy grown GaAsBi bismuth surface microdroplets investigated in situ by micro-Raman spectroscopy under ambient conditions as a function of irradiation power and time. Our results reveal the surface droplets are high-purity crystalline bismuth and the resultant Bi2O3 transformation to be β-phase and stable at room temperature. A detailed Raman study of Bi microdroplet oxidation kinetics yields insights into the laser-induced oxidation process and offers useful real-time diagnostics. The temporal evolution of new β-Bi2O3 Raman modes is shown to be well described by Johnson-Mehl-Avrami-Kolmogorov kinetic transformation theory and while this study limits itself to the laser-induced oxidation of GaAsBi bismuth surface droplets, the results will find application within the wider context of bismuth laser-induced oxidation and direct Raman laser processing.

  8. Microstructural evolution in high oxygen fugacity processed bismuth strontium calcium copper oxide

    NASA Astrophysics Data System (ADS)

    Gannon, John J., Jr.

    A decomposition/reformation process that uses a high oxygen fugacity (2 MPa) heat treatment followed by low oxygen fugacity (<1 MPa) annealing was applied to silver-sheathed Bisb2Srsb2CaCusb2Osb{8±delta} (Bi-2212) tapes. The rate at which the Bi-2212 phase reforms was studied using X-ray diffractometry and image analyses. The kinetic data was fitted to an Avrami-type equation and was found to be consistent with that predicted for diffusion-controlled growth of plate-like grains. The effect of varying the oxygen fugacity during reformation annealing was also studied and the rate of Bi-2212 phase formation slowed considerably with increasing oxygen fugacity. The rate of oxygen exsolution from the core is a key parameter for the overall transformation kinetics. Two of the decomposition products produced by high-fOsb2 processing of the Bi-2212 compound are a copper-free alkaline-earth bismuthate (a Bisb9Srsb{11}Casb5Osb{x}-type) and CuO. Blended mixtures of these two compounds were used to form two-powder reaction couples used to study Bi-2212 phase formation. Samples were annealed in flowing oxygen at temperatures below the Bi-2212 solidus. The formation of apparent Bi-2212/Bi-2201 intergrowths along with some alkaline-earth cuprate phases were detected. The 14:24-type alkaline-earth cuprate phase was formed in fine CuO powder couples but not in couples containing large CuO particles. The reaction leading to Bi-2212 phase formation was confirmed to be solid-state at temperatures below 875sp°C. The development of c-axis grain alignment in high-fOsb2 decomposed Bi-2212 tapes that were reformed with low-fOsb2 annealing was studied. Such processing can produce enhanced 00l grain alignment and the evolution of this texture was examined in tapes at intermediate points in the reformation process. Some of the mechanisms associated with texture development in melt-processed tapes were found to be inadequate for describing the alignment in high-fOsb2 processed Bi-2212 grains

  9. Indium oxide/n-silicon heterojunction solar cells

    DOEpatents

    Feng, Tom; Ghosh, Amal K.

    1982-12-28

    A high photo-conversion efficiency indium oxide/n-silicon heterojunction solar cell is spray deposited from a solution containing indium trichloride. The solar cell exhibits an Air Mass One solar conversion efficiency in excess of about 10%.

  10. Chemical oxygen demand analysis of wastewater using trivalent manganese oxidant with chloride removal by sodium bismuthate pretreatment.

    PubMed

    Miller, D G; Brayton, S V; Boyles, W T

    2001-01-01

    Current chemical oxygen demand (COD) analyses generate wastes containing hexavalent and trivalent chromium, mercury, and silver. Waste disposal is difficult, expensive, and poses environmental hazards. A new COD test is proposed that eliminates these metals and shortens analysis time, where trivalent manganese oxidant replaces hexavalent chromium (dichromate). A silver catalyst is not required. Optional pretreatment removes chloride via oxidation to chlorine using sodium bismuthate, eliminating the need for mercury. Sample aqueous and solid components are separated for chloride removal, then recombined for total COD measurement. Soluble and nonsoluble COD can be determined separately. Digestion at 150 degrees C is complete in 1 hour. Results are determined by titration or by spectrophotometric reading. Test wastes contain none of the metals regulated for disposal under the Resource Conservation and Recovery Act. Results are shown for selected organic compounds and various wastewaters. Statistical comparisons are made with dichromate COD and biochemical oxygen demand (BOD5) test values.

  11. Enhanced photoelectrochemical water oxidation of bismuth vanadate via a combined strategy of W doping and surface RGO modification.

    PubMed

    Wan, Xiaokang; Niu, Fujun; Su, Jinzhan; Guo, Liejin

    2016-11-23

    Nanoporous bismuth vanadate is modified simultaneously via tungsten doping and graphene surface modification for use as an efficient photoanode. The modified films were prepared on a FTO substrate by a drop-cast method followed by photoreduction of graphene oxide. SEM, XRD, Raman and XPS characterization was conducted to confirm the incorporation of tungsten and reduced graphene oxide (RGO), and to look into their influences on the structure and performance of BiVO4. Electrochemical impedance spectroscopy analysis clearly revealed enhanced carrier density and improved electronic conductivity, which are beneficial for the enhancement of PEC performance in comparison to either individually doped or RGO modified BiVO4. Our results indicated that the enhanced PEC performance can be attributed to the synergistic effect of bulk doping and surface modification that facilitates electron and hole transport and transfer in the bulk and at the semiconductor-electrolyte interface.

  12. Ultrahigh-Q silicon resonators in a planarized local oxidation of silicon platform.

    PubMed

    Naiman, Alex; Desiatov, Boris; Stern, Liron; Mazurski, Noa; Shappir, Joseph; Levy, Uriel

    2015-05-01

    We describe a platform for the fabrication of smooth waveguides and ultrahigh-quality-factor (Q factor) silicon resonators using a modified local oxidation of silicon (LOCOS) technique. Unlike the conventional LOCOS process, our approach allows the fabrication of nearly planarized structures, supporting a multilayer silicon photonics configuration. Using this approach we demonstrate the fabrication and the characterization of a microdisk resonator with an intrinsic Q factor that is one of the highest Q factors achieved with a compact silicon-on-insulator platform.

  13. The photorefractive characteristics of bismuth-oxide doped lithium niobate crystals

    SciTech Connect

    Zheng, Dahuai; Yao, Jiaying; Kong, Yongfa; Liu, Shiguo; Zhang, Ling; Chen, Shaolin; Xu, Jingjun

    2015-01-15

    Bismuth-doped lithium niobate (LN:Bi) crystals were grown by Czochralski method and their optical damage resistance, photorefraction, absorption spectra, and defect energy levels were investigated. The experimental results indicate that the photorefractive properties of LN:Bi were enhanced as compared with congruent one, the photorefractive response time was greatly shortened, the photorefractive sensitivity was increased, and the diffraction efficiency of near-stoichiometric LN:Bi (SLN:Bi) reached 31.72% and 49.08% at 532 nm and 488 nm laser, respectively (light intensity of 400 mW/cm{sup 2}). An absorption peak at about 350 nm was observed in the absorption spectrum of LN:Bi. And the defect energy levels simulation indicates new defect levels appear in the forbidden gap of LN:Bi crystals. Therefore bismuth can act as photorefractive centers in LN crystals.

  14. New synthesis of bismuth oxide nanoparticles Bi2O3 assisted by tannic acid

    NASA Astrophysics Data System (ADS)

    Ascencio Aguirre, Francisco Miguel; Herrera Becerra, Raúl

    2015-06-01

    A new and simple method of biosynthesis assisted by tannic acid (C76H52O46) is used to obtain bismuth trioxide nanoparticles Bi2O3 in which the β-Bi2O3 phase is identified. Synthesis takes place at room temperature and atmospheric pressure from the reduction of bismuth nitrate pentahydrate (Bi(NO3)3·5H2O) in solution, using tannic acid as a reducing agent and stabilizer. Nanoparticles with an average size of 10.99 ± 0.27 nm are obtained, and the structural properties of the nanoparticles are observed using transmission electron microscopy techniques, as well as UV-Visible-NIR spectroscopy, with which a semiconductor behavior with band gap within a range of (2.57-3.02) eV is observed. Using Raman spectroscopy, it is possible to observe and identify different normal modes of vibration, characteristic of the β-Bi2O3 phase.

  15. An efficient bismuth tungstate visible-light-driven photocatalyst for breaking down nitric oxide.

    PubMed

    Li, Guisheng; Zhang, Dieqing; Yu, Jimmy C; Leung, Michael K H

    2010-06-01

    This paper reports a photocatalytic removal of 400 ppb level of NO in air under visible light irradiation by utilizing three-dimensional (3D) hierarchical bismuth tungstate (Bi(2)WO(6)) microspheres. A facile microwave-assisted hydrothermal method involving bismuth nitrate and sodium wolframate was developed to synthesize the photocatalyst. The Bi(2)WO(6) samples were characterized by using X-ray diffraction (XRD), Brunauer-Emmett-Teller (BET), transmission electron microscopy (TEM), field emission scanning electron microscopy (FESEM), X-ray photoelectron spectroscopy (XPS), Raman and ultraviolet-visible reflectance (UV-vis) spectroscopy. The relationship between the physicochemical property and the photocatalytic performance of the as prepared samples is discussed. The present work demonstrates that the 3D hierarchical Bi(2)WO(6) microspheres are effective visible-light-driven photocatalytic functional materials for air purification.

  16. A review of oxide, silicon nitride, and silicon carbide brazing

    SciTech Connect

    Santella, M.L.; Moorhead, A.J.

    1987-01-01

    There is growing interest in using ceramics for structural applications, many of which require the fabrication of components with complicated shapes. Normal ceramic processing methods restrict the shapes into which these materials can be produced, but ceramic joining technology can be used to overcome many of these limitations, and also offers the possibility for improving the reliability of ceramic components. One method of joining ceramics is by brazing. The metallic alloys used for bonding must wet and adhere to the ceramic surfaces without excessive reaction. Alumina, partially stabilized zirconia, and silicon nitride have high ionic character to their chemical bonds and are difficult to wet. Alloys for brazing these materials must be formulated to overcome this problem. Silicon carbide, which has some metallic characteristics, reacts excessively with many alloys, and forms joints of low mechanical strength. The brazing characteristics of these three types of ceramics, and residual stresses in ceramic-to-metal joints are briefly discussed.

  17. Formation of Mosaic Silicon Oxide Structure during Metal-Assisted Electrochemical Etching of Silicon at High Current Density

    NASA Astrophysics Data System (ADS)

    Cao, Dao Tran; Anh, Cao Tuan; Ngan, Luong Truc Quynh

    2016-05-01

    We have used constant-current, metal-assisted electrochemical etching of silicon in HF/H2O2/ethanol electrolyte to fabricate porous silicon. We found that, at large enough current density, the sponge-like porous silicon structure is replaced by a mosaic structure, which includes islands of various shapes emerging between trenches that have been etched downward. Energy-dispersive x-ray analysis showed that the surface of the mosaic pieces was covered with silicon oxide, while little silicon oxide developed on the surface of trenches. We suggest that the appearance of the mosaic structure can be explained by the increase in the oxidation rate of silicon when the anodic current density increases, combined with no change in the dissolution rate of silicon oxide into the solution. Consequently, above a certain value of anodic current density, there is sufficient residual silicon oxide on the etched surface to create a continuous thin film. However, if the silicon oxide layer is too thick (e.g., due to too high anodic current density or too long etching time), it will become cracked (formation of mosaic pieces), likely due to differences in thermal expansion coefficient between the amorphous silicon oxide layer and crystalline silicon substrate. The oxide is cracked at locations with many defects, and the cracks reveal the silicon substrate. Therefore, at the locations where cracks occur, etching will go sideways and downward, creating trenches.

  18. I. Electroluminescence from Hydrogen Uranyl Phosphate. I. Indium-Substituted Bismuth Copper Oxide Superconductors

    NASA Astrophysics Data System (ADS)

    Dieckmann, Gunnar Rudolph

    1990-01-01

    Chapter 1. A review of the general aspects of solid electrolytes is presented along with a summary of the electrical and optical properties of hydrogen uranyl phosphate (HUO_2PO_4 bullet4H_2O, HUP). A review of impedance spectroscopy, as it relates to the determination of ionic conductivities and dielectric constants of solid electrolytes is presented. The final section covers some aspects of gas plasma display devices. Chapter 2. Electroluminescence (EL) cells have been constructed with the ionically conducting solid HUP as the emissive medium. With ac excitation, both uranyl emission and molecular nitrogen plasma emission are observed, with the latter appearing to excite the former. Similar results were obtained with fully-substituted sodium (NaUP), magnesium (Mg_{0.5}UP), and pyridinium (pyHUP) derivatives of HUP. For all of these solids, the dependence of the EL intensity on sample thickness, ac frequency, and applied voltage has been determined. Impedance measurements permitted acquisition of dielectric constants and ionic conductivities for these solids, both of which decrease in the order HUP > NaUP > Mg_{0.5}UP > pyHUP. A model describing the dependence of EL intensity on cell parameters is presented. Chapter 3. The copper oxide superconductors can be structurally classified into five major families, represented by the compositions, (La,Sr)_2CuO _4, YBa_2Cu_3O_7, Pb_2Sr_2(Y,Ca)Cu_3O_8, (TIO)_{m}Ca_{n-1}Ba_2Cu _{n}O_{2n+2}, and Bi_2Sr_2(Ln_{1-x}Ce _{x})_2Cu_2O_{10+y }. All families are linked by a CuO _2 layer, which is crucial for superconductivity. The structural and chemical aspects of each family is covered with emphasis on the bismuth and thallium systems. The effects of substitution and oxygen annealing are also briefly considered. Chapter 4. The attempted substitution of indium into the rm Bi_2(Ca,Sr)_2CuO _6 and Bi_2(Ca,Sr) _3Cu_2O _8 systems is reported. Previously unreported side products, (Ca,Sr)In_2O _4 and Bi-Ca-Sr-O, viz., produced in the

  19. Amorphous silicon oxide window layers for high-efficiency silicon heterojunction solar cells

    NASA Astrophysics Data System (ADS)

    Peter Seif, Johannes; Descoeudres, Antoine; Filipič, Miha; Smole, Franc; Topič, Marko; Charles Holman, Zachary; De Wolf, Stefaan; Ballif, Christophe

    2014-01-01

    In amorphous/crystalline silicon heterojunction solar cells, optical losses can be mitigated by replacing the amorphous silicon films by wider bandgap amorphous silicon oxide layers. In this article, we use stacks of intrinsic amorphous silicon and amorphous silicon oxide as front intrinsic buffer layers and show that this increases the short-circuit current density by up to 0.43 mA/cm2 due to less reflection and a higher transparency at short wavelengths. Additionally, high open-circuit voltages can be maintained, thanks to good interface passivation. However, we find that the gain in current is more than offset by losses in fill factor. Aided by device simulations, we link these losses to impeded carrier collection fundamentally caused by the increased valence band offset at the amorphous/crystalline interface. Despite this, carrier extraction can be improved by raising the temperature; we find that cells with amorphous silicon oxide window layers show an even lower temperature coefficient than reference heterojunction solar cells (-0.1%/°C relative drop in efficiency, compared to -0.3%/°C). Hence, even though cells with oxide layers do not outperform cells with the standard design at room temperature, at higher temperatures—which are closer to the real working conditions encountered in the field—they show superior performance in both experiment and simulation.

  20. Rational harmonic mode-locked laser using a bismuth-oxide-based highly nonlinear erbium-doped fiber

    NASA Astrophysics Data System (ADS)

    Fukuchi, Yutaka; Hirata, Kouji; Muraguchi, Masahiro; Maeda, Joji

    2017-01-01

    We report a rational harmonic mode-locked fiber laser employing a bismuth-oxide-based highly nonlinear erbium-doped fiber (Bi-HNL-EDF) with a length of 1.5 m. The Bi-HNL-EDF is used as a broadband gain medium and as a noise suppressor based on self-phase modulation. The amplitude of the rational harmonic mode-locked pulses can be regulated by properly tuning the modulation parameters of the intracavity modulator. The cavity length as short as 6 m enables generation of stable and clean short pulses with a repetition frequency up to 40 GHz over the wavelength range covering both the conventional and the longer bands.

  1. First stages of silicon oxidation with the activation relaxation technique

    NASA Astrophysics Data System (ADS)

    Ganster, Patrick; Béland, Laurent Karim; Mousseau, Normand

    2012-08-01

    Using the art nouveau method, we study the initial stages of silicon oxide formation. After validating the method's parameters with the characterization of point defects diffusion mechanisms in pure Stillinger-Weber silicon, which allows us to recover some known results and to detail vacancy and self-interstitial diffusion paths, the method is applied onto a system composed of an oxygen layer deposited on a silicon substrate. We observe the oxygen atoms as they move rapidly into the substrate. From these art nouveau simulations, we extract the energy barriers of elementary mechanisms involving oxygen atoms and leading to the formation of an amorphouslike silicon oxide. We show that the kinetics of formation can be understood in terms of the energy barriers between various coordination environments.

  2. Activation energy of thermal desorption of silicon oxide layers on silicon substrates

    NASA Astrophysics Data System (ADS)

    Enta, Yoshiharu; Osanai, Shodai; Ogasawara, Takahito

    2017-02-01

    Thermal desorption rates of silicon oxide layers, from 20 to 120 nm in thickness, on silicon substrates in vacuum have been accurately obtained from intervals between ring structures formed inside voids on the oxide layers. From the temperature dependence of the desorption rate, the activation energy and frequency factor of the desorption reaction have been derived as a function of the oxide thickness. The obtained values are compared with the previous studies, and as a result, the activation energy is found to be almost constant ( 4 eV) in a wide range of the oxide thickness. The frequency factor decreases as the inverse square of the oxide thickness. The decomposition kinetics of the oxide layer is also discussed from the obtained results.

  3. Hydrogen annealing of silicon gate-nitride-oxide-silicon nonvolatile memory devices

    NASA Astrophysics Data System (ADS)

    Topich, James A.; Turi, Raymond A.

    1982-10-01

    A hydrogen annealing study of silicon gate-nitride-oxide-silicon (SNOS) nonvolatile memory devices showed that the important parameter in determining the optimum hydrogen annealing temperature for maximum charge retention is the previous thermal history of the memory devices. If a memory device's charge retention is not degraded by high-temperature processing, then the hydrogen anneal should be at the silicon nitride deposition temperature. If a device is degraded by high-temperature processing, then the hydrogen anneal should be at the degradation temperature.

  4. Oxidation kinetics of CVD silicon carbide and silicon nitride

    NASA Technical Reports Server (NTRS)

    Fox, Dennis S.

    1992-01-01

    The long-term oxidation behavior of pure, monolithic CVD SiC and Si3N4 is studied, and the isothermal oxidation kinetics of these two materials are obtained for the case of 100 hrs at 1200-1500 C in flowing oxygen. Estimates are made of lifetimes at the various temperatures investigated. Parabolic rate constants for SiC are within an order of magnitude of shorter exposure time values reported in the literature. The resulting silica scales are in the form of cristobalite, with cracks visible after exposure. The oxidation protection afforded by silica for these materials is adequate for long service times under isothermal conditions in 1-atm dry oxygen.

  5. Enhancement of Er optical efficiency through bismuth sensitization in yttrium oxide

    SciTech Connect

    Scarangella, Adriana; Reitano, Riccardo; Franzò, Giorgia; Miritello, Maria; Priolo, Francesco

    2015-07-27

    The process of energy transfer (ET) between optically active ions has been widely studied to improve the optical efficiency of a system for different applications, from lighting and photovoltaics to silicon microphotonics. In this work, we report the influence of Bi on the Er optical emission in erbium-yttrium oxide thin films synthesized by magnetron co-sputtering. We demonstrate that this host permits to well dissolve Er and Bi ions, avoiding their clustering, and thus to stabilize the optically active Er{sup 3+} and Bi{sup 3+} valence states. In addition, we establish the ET occurrence from Bi{sup 3+} to Er{sup 3+} by the observed Bi{sup 3+} PL emission decrease and the simultaneous Er{sup 3+} photoluminescence (PL) emission increase. This was further confirmed by the coincidence of the Er{sup 3+} and Bi{sup 3+} excitation bands, analyzed by PL excitation spectroscopy. By increasing the Bi content of two orders of magnitude inside the host, though the occurrence of Bi-Bi interactions becomes deleterious for Bi{sup 3+} optical efficiency, the ET process between Bi{sup 3+} and Er{sup 3+} is still prevalent. We estimate ET efficiency of 70% for the optimized Bi:Er ratio equal to 1:3. Moreover, we have demonstrated to enhance the Er{sup 3+} effective excitation cross section by more than three orders of magnitude with respect to the direct one, estimating a value of 5.3 × 10{sup −18} cm{sup 2}, similar to the expected Bi{sup 3+} excitation cross section. This value is one of the highest obtained for Er in Si compatible hosts. These results make this material very promising as an efficient emitter for Si-compatible photonics devices.

  6. Nanostructured bismuth vanadate-based materials for solar-energy-driven water oxidation: a review on recent progress

    NASA Astrophysics Data System (ADS)

    Huang, Zhen-Feng; Pan, Lun; Zou, Ji-Jun; Zhang, Xiangwen; Wang, Li

    2014-11-01

    Water oxidation is the key step for both photocatalytic water splitting and CO2 reduction, but its efficiency is very low compared with the photocatalytic reduction of water. Bismuth vanadate (BiVO4) is the most promising photocatalyst for water oxidation and has become a hot topic for current research. However, the efficiency achieved with this material to date is far away from the theoretical solar-to-hydrogen conversion efficiency, mainly due to the poor photo-induced electron transportation and the slow kinetics of oxygen evolution. Fortunately, great breakthroughs have been made in the past five years in both improving the efficiency and understanding the related mechanism. This review is aimed at summarizing the recent experimental and computational breakthroughs in single crystals modified by element doping, facet engineering, and morphology control, as well as macro/mesoporous structure construction, and composites fabricated by homo/hetero-junction construction and co-catalyst loading. We aim to provide guidelines for the rational design and fabrication of highly efficient BiVO4-based materials for water oxidation.

  7. Nanostructured bismuth vanadate-based materials for solar-energy-driven water oxidation: a review on recent progress.

    PubMed

    Huang, Zhen-Feng; Pan, Lun; Zou, Ji-Jun; Zhang, Xiangwen; Wang, Li

    2014-11-06

    Water oxidation is the key step for both photocatalytic water splitting and CO₂ reduction, but its efficiency is very low compared with the photocatalytic reduction of water. Bismuth vanadate (BiVO₄) is the most promising photocatalyst for water oxidation and has become a hot topic for current research. However, the efficiency achieved with this material to date is far away from the theoretical solar-to-hydrogen conversion efficiency, mainly due to the poor photo-induced electron transportation and the slow kinetics of oxygen evolution. Fortunately, great breakthroughs have been made in the past five years in both improving the efficiency and understanding the related mechanism. This review is aimed at summarizing the recent experimental and computational breakthroughs in single crystals modified by element doping, facet engineering, and morphology control, as well as macro/mesoporous structure construction, and composites fabricated by homo/hetero-junction construction and co-catalyst loading. We aim to provide guidelines for the rational design and fabrication of highly efficient BiVO₄-based materials for water oxidation.

  8. Ion implantation reduces radiation sensitivity of metal oxide silicon /MOS/ devices

    NASA Technical Reports Server (NTRS)

    1971-01-01

    Implanting nitrogen ions improves hardening of silicon oxides 30 percent to 60 percent against ionizing radiation effects. Process reduces sensitivity, but retains stability normally shown by interfaces between silicon and thermally grown oxides.

  9. Samarium- and ytterbium-promoted oxidation of silicon and gallium arsenide surfaces

    SciTech Connect

    Franciosi, A.

    1989-02-21

    A method is described for promoting oxidation of a silicon or gallium arsenide surface comprising: depositing a ytterbium overlayer on the silicon or gallium arsenide surface prior to the oxidation of the surface.

  10. Multiwavelength L-band fiber laser with bismuth-oxide EDF and photonic crystal fiber

    NASA Astrophysics Data System (ADS)

    Ramzia Salem, A. M.; Al-Mansoori, M. H.; Hizam, H.; Mohd Noor, S. B.; Abu Bakar, M. H.; Mahdi, M. A.

    2011-05-01

    A multiwavelength laser comb using a bismuth-based erbium-doped fiber and 50 m photonic crystal fiber is demonstrated in a ring cavity configuration. The fiber laser is solely pumped by a single 1455 nm Raman pump laser to exploit its higher power delivery compared to that of a single-mode laser diode pump. At 264 mW Raman pump power and 1 mW Brillouin pump power, 38 output channels in the L-band have been realized with an optical signal-to-noise ratio above 15 dB and a Stokes line spacing of 0.08 nm. The laser exhibits a tuning range of 12 nm and produces stable Stokes lines across the tuning range between Brillouin pump wavelengths of 1603 nm and 1615 nm.

  11. Interface state densities for metal-nitride-oxide-silicon devices

    NASA Astrophysics Data System (ADS)

    Xu, Dan; Kapoor, Vik J.

    1990-10-01

    The interface state density of metal-nitride-oxide-silicon (MNOS) devices was investigated as a function of silicon nitride (Si3N4) deposition temperature and postdeposition annealing conditions. The interface state density around the midgap of the oxide-silicon interface of the MNOS structures as a function of deposition temperature between 650 to 850 °C increased from 1.1 to 8.2×1011 cm-2 eV-1, for as-deposited silicon nitride films,; but decreased from 5.0 to 3.5×1011 cm-2 eV-1, for films annealed in nitrogen at 900 °C for 60 min; and further decreased and remained constant at 1.5×1011 cm-2 eV-1, for films which were further annealed in hydrogen at 900 °C for an additional 60 min. The interface state density increase is due to an increase in the loss of hydrogen at the interfacial region and also due to an increase in the thermal stress caused by differences in thermal expansion coefficients of silicon nitride and silicon dioxide films at higher deposition temperatures. The interface state density is subject to two opposing influences; an increase by thermal stress, and a reduction by hydrogen compensation of these states. Thus either low-temperature processing or subsequent hydrogen annealing after high processing temperatures is warranted.

  12. Zinc oxide varistors and/or resistors

    DOEpatents

    Arnold, W.D. Jr.; Bond, W.D.; Lauf, R.J.

    1993-07-27

    Varistors and/or resistors are described that include doped zinc oxide gel microspheres. The doped zinc oxide gel microspheres preferably have from about 60 to about 95% by weight zinc oxide and from about 5 to about 40% by weight dopants based on the weight of the zinc oxide. The dopants are a plurality of dopants selected from silver salts, boron oxide, silicon oxide and hydrons oxides of aluminum, bismuth, cobalt, chromium, manganese, nickel, and antimony.

  13. Zinc oxide varistors and/or resistors

    DOEpatents

    Arnold, Jr., Wesley D.; Bond, Walter D.; Lauf, Robert J.

    1993-01-01

    Varistors and/or resistors that includes doped zinc oxide gel microspheres. The doped zinc oxide gel microspheres preferably have from about 60 to about 95% by weight zinc oxide and from about 5 to about 40% by weight dopants based on the weight of the zinc oxide. The dopants are a plurality of dopants selected from silver salts, boron oxide, silicon oxide and hydrons oxides of aluminum, bismuth, cobalt, chromium, manganese, nickel, and antimony.

  14. One dimensional silicon nanostructures prepared by oxidized porous silicon under heat treatment

    NASA Astrophysics Data System (ADS)

    Vendamani, V. S.; Pathak, A. P.; Rao, S. V. S. Nageswara

    2014-11-01

    One dimensional high aspect ratio Si nanostructures were prepared by using oxidized sponge like nanostructured porous silicon (pSi) as a seed material. This can be considered as a complementary technique to synthesize silicon nanowires such as vapour-liquid-solid method (VLS). One dimensional silicon nanostructures were fabricated by subjecting pSi to heat treatment without metal assistance. It is shown that the aspect ratio can be tuned by controlling the concentration of oxygen (SiO2) and the porosity of the seed material (pSi). The atomic percentage of oxygen incorporated into pSi was estimated by Energy Dispersive X-ray Spectroscopy (EDS). Field Emission Scanning Electron Microscope (FESEM) confirms unambiguously the formation of silicon nanowires. The broad peak observed around 490 cm-1 in Raman spectra further confirms the formation of Si NWs. At higher oxygen concentration, narrower (∼20 nm) and longer (∼1 μm) silicon nanowires have been achieved. The observed change in photoluminescence (PL) peak position towards lower wavelength as a function of the aspect ratio of Si NWs is in good agreement with quantum confinement effects. This work demonstrates a new oxide assisted method to prepare high aspect ratio silicon nanowires without using any metal catalysts.

  15. The Oxidation of CVD Silicon Carbide in Carbon Dioxide

    NASA Technical Reports Server (NTRS)

    Opila, Elizabeth J.; Nguyen, QuynchGiao N.

    1997-01-01

    Chemically-vapor-deposited silicon carbide (CVD SiC) was oxidized in carbon dioxide (CO2) at temperatures of 1200-1400 C for times between 100 and 500 hours at several gas flow rates. Oxidation weight gains were monitored by thermogravimetric analysis (TGA) and were found to be very small and independent of temperature. Possible rate limiting kinetic laws are discussed. Oxidation of SiC by CO2 is negligible compared to the rates measured for other oxidants typically found in combustion environments: oxygen and water vapor.

  16. Visible-light-induced water oxidation by a hybrid photocatalyst consisting of bismuth vanadate and copper(II) meso-tetra(4-carboxyphenyl)porphyrin.

    PubMed

    Nakashima, Shu; Negishi, Ryo; Tada, Hiroaki

    2016-03-04

    Copper(II) meso-tetra(4-carboxyphenyl)porphyrin surface-modified monoclinic scheelite bismuth vanadate (CuTCPP/BiVO4) has been synthesized via a two-step route involving chemisorption of TCPP on BiVO4 and successive Cu(II) ion incorporation into the TCPP, and the surface modification drastically enhances the water oxidation to oxygen (O2) under visible-light irradiation (λ > 430 nm).

  17. Investigation of gamma ray shielding efficiency and mechanical performances of concrete shields containing bismuth oxide as an environmentally friendly additive

    NASA Astrophysics Data System (ADS)

    Yao, Ya; Zhang, Xiaowen; Li, Mi; Yang, Rong; Jiang, Tianjiao; Lv, Junwen

    2016-10-01

    Concrete has a proven ability to attenuate gamma rays and neutrons without compromising structural property; therefore, it is widely used as the primary shielding material in many nuclear facilities. Recently, there is a tendency toward using various additives to enhance the shielding properties of these concrete mixtures. However, most of these additives being used either pose hygiene hazards or require special handling processes. It would be ideal if environmentally friendly additives were available for use. The bismuth oxide (Bi2O3) additive shows promise in various shielding applications due to its proven radiation attenuation ability and environmentally friendly nature. To the best of our knowledge, however, Bi2O3 has never been used in concrete mixtures. Therefore, for this research, we fabricated the Bi2O3-based concrete mixtures by adding Bi2O3 powder in the ordinary concrete mixture. Concrete mixtures with lead oxide (PbO) additives were used for comparison. Radiation shielding parameters like the linear attenuation coefficients (LAC) of all these concrete mixtures showing the effects of the Bi2O3 additions are presented. The mechanical performances of concrete mixtures incorporated with Bi2O3 additive were also investigated. It suggested that the concrete mixture containing 25% Bi2O3 powder (B5 in this study) provided the best shielding capacity and mechanical performance among other mixes. It has a significant potential for application as a structural concrete where radiological protection capability is required.

  18. Tribological interaction between polytetrafluoroethylene and silicon oxide surfaces

    SciTech Connect

    Uçar, A.; Çopuroğlu, M.; Suzer, S.; Baykara, M. Z.; Arıkan, O.

    2014-10-28

    We investigated the tribological interaction between polytetrafluoroethylene (PTFE) and silicon oxide surfaces. A simple rig was designed to bring about a friction between the surfaces via sliding a piece of PTFE on a thermally oxidized silicon wafer specimen. A very mild inclination (∼0.5°) along the sliding motion was also employed in order to monitor the tribological interaction in a gradual manner as a function of increasing contact force. Additionally, some patterns were sketched on the silicon oxide surface using the PTFE tip to investigate changes produced in the hydrophobicity of the surface, where the approximate water contact angle was 45° before the transfer. The nature of the transferred materials was characterized by X-ray photoelectron spectroscopy (XPS) and scanning electron microscopy (SEM). XPS results revealed that PTFE was faithfully transferred onto the silicon oxide surface upon even at the slightest contact and SEM images demonstrated that stable morphological changes could be imparted onto the surface. The minimum apparent contact pressure to realize the PTFE transfer is estimated as 5 kPa, much lower than reported previously. Stability of the patterns imparted towards many chemical washing processes lead us to postulate that the interaction is most likely to be chemical. Contact angle measurements, which were carried out to characterize and monitor the hydrophobicity of the silicon oxide surface, showed that upon PTFE transfer the hydrophobicity of the SiO{sub 2} surface could be significantly enhanced, which might also depend upon the pattern sketched onto the surface. Contact angle values above 100° were obtained.

  19. Effect of welding thermal cycles on the oxidation resistance of 9 wt.% Cr heat resistant steels in 550 °C lead-bismuth eutectic

    NASA Astrophysics Data System (ADS)

    Wang, Jian; Rong, Lijian; Li, Dianzhong; Lu, Shanping

    2016-12-01

    The oxidation resistance for the heat affected zone (HAZ) and base metal of 9 wt.% Cr heat resistant steel in 550 °C lead-bismuth eutectic has been investigated. The oxide film presents a three-layer structure. The outer layer is Fe3O4 while the inner layer is mainly FeCr2O4. The oxide film thickness becomes thinner and thinner in turns of the coarse grained HAZ, fine grained HAZ, inter-critical HAZ and base metal. The oxygen diffusion is the rate determining step during the oxidation process. The Cr-enriched M23C6 plays a significant role on the oxidation rate at the initial stage of oxidation. Increasing the carbon content is a useful method to improve the oxidation resistance.

  20. Silicon-containing ferritic/martensitic steel after exposure to oxygen-containing flowing lead-bismuth eutectic at 450 and 550 °C

    NASA Astrophysics Data System (ADS)

    Schroer, Carsten; Koch, Verena; Wedemeyer, Olaf; Skrypnik, Aleksandr; Konys, Jürgen

    2016-02-01

    A ferritic/martensitic (f/m) steel with 9 and 3 mass% of chromium (Cr) and silicon (Si), respectively, was tested on performance in flowing lead-bismuth eutectic (LBE) at 450 and 550 °C, each at concentrations of solved oxygen of both 10-7 and 10-6 mass%. The 9Cr-3Si steel generally exhibits the same basic corrosion modes as other f/m materials with 9 mass% Cr and typically lower Si content, namely Steel T91. The Si-rich steel shows an overall improved performance in comparison to T91 at 450 °C and 10-7 mass% solved oxygen, but especially at 450 °C and 10-6 mass% solved oxygen. The advantage of higher Si-content in 9Cr steel is less clear at 550 °C. Especially high oxygen content in flowing LBE at 550 °C, between >10-6 mass% and oxygen saturation, seems detrimental for the high-Si material in respect of the initiation and progress of a solution-based corrosion.

  1. Effect of Silicon Carbide Nanoparticles on the Grain Boundary Segregation and Thermoelectric Properties of Bismuth Doped Mg2Si0.7Ge0.3

    NASA Astrophysics Data System (ADS)

    Farahi, Nader; Prabhudev, Sagar; Bugnet, Matthieu; Botton, Gianluigi A.; Salvador, James R.; Kleinke, Holger

    2016-12-01

    The effect of silicon carbide (SiC) nanoparticles on the thermoelectric properties of Mg2Si0.676Ge0.3Bi0.024 was investigated. Increasing the concentration of SiC nanoparticles systematically reduces the electrical conductivity from 431 Ω-1 cm-1 for the pristine sample to 370 Ω-1 cm-1 for the sample with 1.5 wt.% SiC at 773 K, while enhancing the Seebeck coefficient from -202 μV K-1 to -215 μV K-1 at 773 K. In spite of the high thermal conductivity of SiC, its additions could successfully decrease the lattice thermal conductivity from 3.2 W m-1 K-1 to 2.7 W m-1 K-1 at 323 K, presumably by adding more interfaces. The Z contrast transmission electron microscopy imaging ( Z = atomic number) and energy dispersive x-ray spectroscopy revealed bismuth segregation at the grain boundary. In summary, the figure of merit reached its maximum value of 0.75 at 773 K for the sample containing 0.5 wt.% SiC.

  2. Optimization of amorphous silicon double junction solar cells for an efficient photoelectrochemical water splitting device based on a bismuth vanadate photoanode.

    PubMed

    Han, Lihao; Abdi, Fatwa F; Perez Rodriguez, Paula; Dam, Bernard; van de Krol, Roel; Zeman, Miro; Smets, Arno H M

    2014-03-07

    A photoelectrochemical water splitting device (PEC-WSD) was designed and fabricated based on cobalt-phosphate-catalysed and tungsten-gradient-doped bismuth vanadate (W:BiVO4) as the photoanode. A simple and cheap hydrogenated amorphous silicon (a-Si:H) double junction solar cell has been used to provide additional bias. The advantage of using thin film silicon (TF-Si) based solar cells is that this photovoltaic (PV) technology meets the crucial requirements for the PV component in PEC-WSDs based on W:BiVO4 photoanodes. TF-Si PV devices are stable in aqueous solutions, are manufactured by simple and cheap fabrication processes and their spectral response, voltage and current density show an excellent match with the photoanode. This paper is mainly focused on the optimization of the TF-Si solar cell with respect to the remaining solar spectrum transmitted through the W:BiVO4 photoanode. The current matching between the top and bottom cells is studied and optimized by varying the thickness of the a-Si:H top cell. We support the experimental optimization of the current balance between the two sub-cells with simulations of the PV devices. In addition, the impact of the light induced degradation of the a-Si:H double junction, the so-called Staebler-Wronski Effect (SWE), on the performance of the PEC-WSD has been studied. The light soaking experiments on the a-Si:H/a-Si:H double junctions over 1000 hours show that the efficiency of a stand-alone a-Si:H/a-Si:H double junction cell is significantly reduced due to the SWE. Nevertheless, the SWE has a significantly smaller effect on the performance of the PEC-WSD.

  3. Role of O and Se defects in the thermoelectric properties of bismuth oxide selenide

    NASA Astrophysics Data System (ADS)

    Van Quang, Tran; Kim, Miyoung

    2016-11-01

    Bismuth oxygen selenide, Bi2O2Se, is a promising thermoelectric material because of its reduced thermal conductivity. In this study, we perform the first-principles calculation and utilize the solution of Boltzmann transport equation in a constant relaxation-time approximation to compute the electronic and thermoelectric properties of Bi2O2Se with O and Se defects. Oxygen vacancies trap bands located inside the band gap of Bi2O2Se, and the compound becomes a conductor. These bands lead to drastic reduction in the Seebeck coefficient. When vacancies are filled by selenide atoms (selenide point defect), the materials return to be a semiconductor and the Seebeck coefficient increases. The increase of S is also found in the system with defects formed by the substitution of oxygen atoms into selenide sites (oxygen point defect) in the pristine compound. The power factor significantly increases during p-type doping compared with that during n-type doping for the selenide point defect. However, differences in the two doping cases are less distinguished for the oxygen point defect. Hence, the selenide point defect, Bi2O2-δSe1+δ with p-type doping, is an effective way to increase the power factor and eventually the thermoelectric efficiency of Bi2O2Se.

  4. Origin of complex impact craters on native oxide coated silicon surfaces

    NASA Astrophysics Data System (ADS)

    Samela, Juha; Nordlund, Kai; Popok, Vladimir N.; Campbell, Eleanor E. B.

    2008-02-01

    Crater structures induced by impact of keV-energy Arn+ cluster ions on silicon surfaces are measured with atomic force microscopy. Complex crater structures consisting of a central hillock and outer rim are observed more often on targets covered with a native silicon oxide layer than on targets without the oxide layer. To explain the formation of these complex crater structures, classical molecular dynamics simulations of Ar cluster impacts on oxide coated silicon surfaces, as well as on bulk amorphous silica, amorphous Si, and crystalline Si substrates, are carried out. The diameter of the simulated hillock structures in the silicon oxide layer is in agreement with the experimental results, but the simulations cannot directly explain the height of hillocks and the outer rim structures when the oxide coated silicon substrate is free of defects. However, in simulations of 5keV /atom Ar12 cluster impacts, transient displacements of the amorphous silicon or silicon oxide substrate surfaces are induced in an approximately 50nm wide area surrounding the impact point. In silicon oxide, the transient displacements induce small topographical changes on the surface in the vicinity of the central hillock. The comparison of cluster stopping mechanisms in the various silicon oxide and silicon structures shows that the largest lateral momentum is induced in the silicon oxide layer during the impact; thus, the transient displacements on the surface are stronger than in the other substrates. This can be a reason for the higher frequency of occurrence of the complex craters on oxide coated silicon.

  5. Oxidation Protection of Porous Reaction-Bonded Silicon Nitride

    NASA Technical Reports Server (NTRS)

    Fox, D. S.

    1994-01-01

    Oxidation kinetics of both as-fabricated and coated reaction-bonded silicon nitride (RBSN) were studied at 900 and 1000 C with thermogravimetry. Uncoated RBSN exhibited internal oxidation and parabolic kinetics. An amorphous Si-C-O coating provided the greatest degree of protection to oxygen, with a small linear weight loss observed. Linear weight gains were measured on samples with an amorphous Si-N-C coating. Chemically vapor deposited (CVD) Si3N4 coated RBSN exhibited parabolic kinetics, and the coating cracked severely. A continuous-SiC-fiber-reinforced RBSN composite was also coated with the Si-C-O material, but no substantial oxidation protection was observed.

  6. Influence of experimental parameters on physical properties of porous silicon and oxidized porous silicon layers

    NASA Astrophysics Data System (ADS)

    Charrier, J.; Alaiwan, V.; Pirasteh, P.; Najar, A.; Gadonna, M.

    2007-08-01

    This paper reports physical properties of porous silicon and oxidized porous silicon, manufactured by anodisation from heavily p-type doped silicon wafers as a function of experimental parameters. The growth rate and refractive index of the layers were studied at different applied current densities and glycerol concentrations in electrolyte. When the current density varied from 5 to 100 mA/cm 2, the refractive index was between 1.2 and 2.4 which corresponded to a porosity range from 42 to 85%. After oxidation, the porosity decreased and was between 2 and 45% for a refractive index range from 1.22 to 1.46. The thermal processing also induced an increase in thickness which was dependent on the initial porosity. This increase in thickness was more important for the lowest porosities. Lastly, the roughness of the porous layer/silicon substrate interface was studied at different applied current densities and glycerol concentrations in solution. Roughness decreased when the current density or glycerol concentration increased. Moreover, roughness was also reduced by thermal oxidation.

  7. XPS study on silica bismuthate glasses and glass ceramics

    NASA Astrophysics Data System (ADS)

    Simon, V.; Todea, M.; Takács, A. F.; Neumann, M.; Simon, S.

    2007-01-01

    X-ray photoelectron spectroscopy (XPS) was used to evidence the effect of the Bi 2O 3 to SiO 2 ratio and of partial crystallisation on the electronic charge density around the atoms entering silica-bismuthate glasses of nominal composition 0.01Fe 2O 3ṡ0.99[ xSiO 2ṡ(100- x)Bi 2O 3] with 10≤x≤60 mol%. The core level spectra show significant composition dependent changes in binding energy, and the full width at half maximum of photoelectron peaks both of cations and of oxygen atoms. The analysis reveals changes in electron density correlated with the ionic and covalent character of the samples. The shift in binding energy suggests charge transfer from silicon and oxygen atoms to bismuth atoms. Contrary to the expected behaviour in conventional silicate oxide systems, the results indicate an increase of ionicity for silicon and of covalency for bismuth atoms. The same evolution of ionicity/covalency is observed after partial crystallisation.

  8. Hole Trapping in Thermal Oxides Grown under Various Oxidation Conditions Using Avalanche Injection in Poly-Silicon Gate Structures

    DTIC Science & Technology

    2014-05-01

    Hole Trapping in Thermal Oxides Grown under Vaious Oxidation Conditions Using Avalanche Injection in Poly-Silicon Gate Structures Contractor... Avalanche In ection in Poly-Silicon Gate Structureac 12. PERSONAL AUTHOR(S) K.V. Anand, B.R. Cairns, R.J. Strain 13a. TYPE OF REPORT 13b. TIME...Trapping, Oxidation Conditions, Avalanche Injection, Poly-Silicon Gates, Oxide Traps 19. ABSTRACT (Continue on reverse If necenry W Identify by block

  9. The study of optical band edge property of bismuth oxide nanowires α-Bi2O3.

    PubMed

    Ho, Ching-Hwa; Chan, Ching-Hsiang; Huang, Ying-Sheng; Tien, Li-Chia; Chao, Liang-Chiun

    2013-05-20

    The α-phase Bi(2)O(3) (α-Bi(2)O(3)) is a crucial and potential visiblelight photocatalyst material needless of intentional doping on accommodating band gap. The understanding on fundamental optical property of α-Bi(2)O(3) is important for its extended applications. In this study, bismuth oxide nanowires with diameters from tens to hundreds nm have been grown by vapor transport method driven with vapor-liquid-solid mechanism on Si substrate. High-resolution transmission electron microscopy and Raman measurement confirm α phase of monoclinic structure for the as-grown nanowires. The axial direction for the as-grown nanowires was along < 122 >. The band-edge structure of α-Bi(2)O(3) has been probed experimentally by thermoreflectance (TR) spectroscopy. The direct band gap was determined accurately to be 2.91 eV at 300 K. Temperaturedependent TR measurements of 30-300 K were carried out to evaluate temperature-energy shift and line-width broadening effect for the band edge of α-Bi(2)O(3) thin-film nanowires. Photoluminescence (PL) experiments at 30 and 300 K were carried out to identify band-edge emission as well as defect luminescence for the α-Bi(2)O(3) nanowires. On the basis of experimental analyses of TR and PL, optical characteristics of direct band edge of α-Bi(2)O(3) nanowires have thus been realized.

  10. Integration and High-Temperature Characterization of Ferroelectric Vanadium-Doped Bismuth Titanate Thin Films on Silicon Carbide

    NASA Astrophysics Data System (ADS)

    Ekström, Mattias; Khartsev, Sergiy; Östling, Mikael; Zetterling, Carl-Mikael

    2017-03-01

    4H-SiC electronics can operate at high temperature (HT), e.g., 300°C to 500°C, for extended times. Systems using sensors and amplifiers that operate at HT would benefit from microcontrollers which can also operate at HT. Microcontrollers require nonvolatile memory (NVM) for computer programs. In this work, we demonstrate the possibility of integrating ferroelectric vanadium-doped bismuth titanate (BiTV) thin films on 4H-SiC for HT memory applications, with BiTV ferroelectric capacitors providing memory functionality. Film deposition was achieved by laser ablation on Pt (111)/TiO2/4H-SiC substrates, with magnetron-sputtered Pt used as bottom electrode and thermally evaporated Au as upper contacts. Film characterization by x-ray diffraction analysis revealed predominately (117) orientation. P-E hysteresis loops measured at room temperature showed maximum 2P r of 48 μC/cm2, large enough for wide read margins. P-E loops were measurable up to 450°C, with losses limiting measurements above 450°C. The phase-transition temperature was determined to be about 660°C from the discontinuity in dielectric permittivity, close to what is achieved for ceramics. These BiTV ferroelectric capacitors demonstrate potential for use in HT NVM applications for SiC digital electronics.

  11. Shape controlled flower-like silicon oxide nanowires and their pH response

    NASA Astrophysics Data System (ADS)

    Shao, Qi; Que, Rong-hui; Shao, Ming-wang; Zhou, Qing; Ma, Dorothy Duo Duo; Lee, Shuit-Tong

    2011-04-01

    Silicon oxide nanowires were synthesized with high-temperature evaporation using silicon monoxide as starting materials and tin and gallium as catalysts. The products take the shape of flowers with petals composed of silicon oxide nanowires. The pH response of the products reveals excellent linear relation due to their vast surface area.

  12. Bismuth Oxide Nanoparticles Partially Substituted with Eu(III), Mn(IV), and Si(IV): Structural, Spectroscopic, and Optical Findings.

    PubMed

    Ortiz-Quiñonez, José-Luis; Zumeta-Dubé, Inti; Díaz, David; Nava-Etzana, Noel; Cruz-Zaragoza, Epifanio; Santiago-Jacinto, Patricia

    2017-03-20

    Interest in nanostructured partially substituted bismuth oxides has been increasing over the last years. Research on new synthesis methods, properties, and possible uses for these oxides is needed. The objective of this paper is to synthesize β-Bi2O3, β-Bi2O3:Eu(3+), β-Bi2O3:Mn(4+), Bi12Bi0.8O19.2, Bi12Bi0.8O19.2/Li(+), Bi12MnO20, and Bi12SiO20 nanoparticles and to investigate their structural, spectroscopic, and optical changes. Some of the causes that generated their properties are also discussed. These materials are important because the doping or partial substitution of bismuth oxide with these cations (Eu(3+), Mn(4+), and Si(4+)) modifies some properties such as optical absorption, reactivity toward CO2, among others. X-ray diffraction (in powders), high-resolution transmission electron microscopy, Fourier transform infrared (FTIR), resonance Raman scattering, diffuse reflectance, and solid-state magic-angle-spinning (29)Si NMR were used for the characterization of the synthesized materials. We found that partial substitution of yellow Bi12Bi0.8O19.2 with Mn(4+) and Si(4+) changed the color to green and whitish, respectively. New bands in the Raman scattering and FTIR spectra of these oxides are deeply discussed. Raman scattering spectroscopy was a valuable and reliable technique to detect the Eu(3+) and Mn(4+) cations as dopants in the bismuth oxides. The (29)Si chemical shift (δ) in Bi12SiO20 was -78.16 ppm, whereas in SiO2, it was around -110 ppm. This considerable shift in Bi12SiO20 occurred because of an increased shielding of the Si nucleus in the Si(O)4 tetrahedron. This shielding was provided by the low-electronegativity and highly polarizable Bi cations. The isovalent doping of β-Bi2O3 nanoparticles with Eu(3+) enhanced their thermal stability over 400 °C. Variation in the optical absorption and reactivity toward the acidic CO2 molecule of the partially substituted bismuth oxides was explained on the basis of the optical basicity and ionic

  13. Efficient Direct Reduction of Graphene Oxide by Silicon Substrate

    PubMed Central

    Chan Lee, Su; Some, Surajit; Wook Kim, Sung; Jun Kim, Sun; Seo, Jungmok; Lee, Jooho; Lee, Taeyoon; Ahn, Jong-Hyun; Choi, Heon-Jin; Chan Jun, Seong

    2015-01-01

    Graphene has been studied for various applications due to its excellent properties. Graphene film fabrication from solutions of graphene oxide (GO) have attracted considerable attention because these procedures are suitable for mass production. GO, however, is an insulator, and therefore a reduction process is required to make the GO film conductive. These reduction procedures require chemical reducing agents or high temperature annealing. Herein, we report a novel direct and simple reduction procedure of GO by silicon, which is the most widely used material in the electronics industry. In this study, we also used silicon nanosheets (SiNSs) as reducing agents for GO. The reducing effect of silicon was confirmed by various characterization methods. Furthermore, the silicon wafer was also used as a reducing template to create a reduced GO (rGO) film on a silicon substrate. By this process, a pure rGO film can be formed without the impurities that normally come from chemical reducing agents. This is an easy and environmentally friendly method to prepare large scale graphene films on Si substrates. PMID:26194107

  14. Green light emission from terbium doped silicon rich silicon oxide films obtained by plasma enhanced chemical vapor deposition.

    PubMed

    Podhorodecki, A; Zatryb, G; Misiewicz, J; Wojcik, J; Wilson, P R J; Mascher, P

    2012-11-30

    The effect of silicon concentration and annealing temperature on terbium luminescence was investigated for thin silicon rich silicon oxide films. The structures were deposited by means of plasma enhanced chemical vapor deposition. The structural properties of these films were investigated by Rutherford backscattering spectrometry, transmission electron microscopy and Raman scattering. The optical properties were investigated by means of photoluminescence and photoluminescence decay spectroscopy. It was found that both the silicon concentration in the film and the annealing temperature have a strong impact on the terbium emission intensity. In this paper, we present a detailed discussion of these issues and determine the optimal silicon concentration and annealing temperature.

  15. Green light emission from terbium doped silicon rich silicon oxide films obtained by plasma enhanced chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Podhorodecki, A.; Zatryb, G.; Misiewicz, J.; Wojcik, J.; Wilson, P. R. J.; Mascher, P.

    2012-11-01

    The effect of silicon concentration and annealing temperature on terbium luminescence was investigated for thin silicon rich silicon oxide films. The structures were deposited by means of plasma enhanced chemical vapor deposition. The structural properties of these films were investigated by Rutherford backscattering spectrometry, transmission electron microscopy and Raman scattering. The optical properties were investigated by means of photoluminescence and photoluminescence decay spectroscopy. It was found that both the silicon concentration in the film and the annealing temperature have a strong impact on the terbium emission intensity. In this paper, we present a detailed discussion of these issues and determine the optimal silicon concentration and annealing temperature.

  16. Wide gap microcrystalline silicon carbide emitter for amorphous silicon oxide passivated heterojunction solar cells

    NASA Astrophysics Data System (ADS)

    Pomaska, Manuel; Richter, Alexei; Lentz, Florian; Niermann, Tore; Finger, Friedhelm; Rau, Uwe; Ding, Kaining

    2017-02-01

    Wide gap n-type microcrystalline silicon carbide [µc-SiC:H(n)] is highly suitable as window layer material for silicon heterojunction (SHJ) solar cells due to its high optical transparency combined with high electrical conductivity. However, the hot wire chemical vapor deposition (HWCVD) of highly crystalline µc-SiC:H(n) requires a high hydrogen radical density in the gas phase that gives rise to strong deterioration of the intrinsic amorphous silicon oxide [a-SiO x :H(i)] surface passivation. Introducing an n-type microcrystalline silicon oxide [µc-SiO x :H(n)] protection layer between the µc-SiC:H(n) and the a-SiO x :H(i) prevents the deterioration of the passivation by providing an etch resistance and by blocking the diffusion of hydrogen radicals. We fabricated solar cells with µc-SiC:H(n)/µc-SiO x :H(n)/a-SiO x :H(i) stack for the front side and varied the µc-SiO x :H(n) material properties by changing the microstructure of the µc-SiO x :H(n) to evaluate the potential of such stack implemented in SHJ solar cells and to identify the limiting parameters of the protection layer in the device. With this approach we achieved a maximum open circuit voltage of 677 mV and a maximum energy conversion efficiency of 18.9% for a planar solar cell.

  17. Engineering functionalized multi-phased silicon/silicon oxide nano-biomaterials to passivate the aggressive proliferation of cancer.

    PubMed

    Premnath, P; Tan, B; Venkatakrishnan, K

    2015-07-20

    Currently, the use of nano silicon in cancer therapy is limited as drug delivery vehicles and markers in imaging, not as manipulative/controlling agents. This is due to limited properties that native states of nano silicon and silicon oxides offers. We introduce nano-functionalized multi-phased silicon/silicon oxide biomaterials synthesized via ultrashort pulsed laser synthesis, with tunable properties that possess inherent cancer controlling properties that can passivate the progression of cancer. This nanostructured biomaterial is composed of individual functionalized nanoparticles made of a homogenous hybrid of multiple phases of silicon and silicon oxide in increasing concentration outwards from the core. The chemical properties of the proposed nanostructure such as number of phases, composition of phases and crystal orientation of each functionalized nanoparticle in the three dimensional nanostructure is defined based on precisely tuned ultrashort pulsed laser-material interaction mechanisms. The amorphous rich phased biomaterial shows a 30 fold (95%) reduction in number of cancer cells compared to bulk silicon in 48 hours. Further, the size of the cancer cells reduces by 76% from 24 to 48 hours. This method exposes untapped properties of combination of multiple phases of silicon oxides and its applications in cancer therapy.

  18. Silver oxide nanostructure prepared on porous silicon for optoelectronic application

    NASA Astrophysics Data System (ADS)

    Hassan, Marwa Abdul Muhsien; Agool, Ibrahim Ramdan; Raoof, Lamyaa Mohammed

    2014-04-01

    The thermal evaporation system type (Edwards) has been used to evaporate high purity (99.9 %) silver on glass, n- and p-type silicon and porous silicon substrates at room temperature under low pressure (about 10-6 torr) for different thickness (50, 75, 100, 125 and 150 nm). Using a rapid thermal oxidation of Ag film at oxidation temperature 350 °C and different oxidation times, Ag2O thin film was prepared. The structural properties of Ag2O film were investigated and compared with other published results. The structural investigation showed that the films formed at thickness 100 nm showed (111) strong reflection along with weak reflections of (101) corresponding to the growth of single phase Ag2O with cubic structure. Dark and illuminated I-V of p-Ag2O/ p-Si, p-Ag2O/ n-Si, Al/ p-PSi/Al, Al/ n-PSi/Al, p-Ag2O/ p-PSi/c-Si and p-Ag2O/ n-PSi/c-Si heterojunction were investigated, discussed and prepared at optimum condition (oxidation temperature 350 °C and 90 s oxidation time with thickness 100 nm). Ohmic contacts were fabricated by evaporating 99.999 purity silver wires for back and aluminum wires for front contact, respectively.

  19. Silver oxide nanostructure prepared on porous silicon for optoelectronic application

    NASA Astrophysics Data System (ADS)

    Hassan, Marwa Abdul Muhsien; Agool, Ibrahim Ramdan; Raoof, Lamyaa Mohammed

    2013-04-01

    The thermal evaporation system type (Edwards) has been used to evaporate high purity (99.9 %) silver on glass, n- and p-type silicon and porous silicon substrates at room temperature under low pressure (about 10-6 torr) for different thickness (50, 75, 100, 125 and 150 nm). Using a rapid thermal oxidation of Ag film at oxidation temperature 350 °C and different oxidation times, Ag2O thin film was prepared. The structural properties of Ag2O film were investigated and compared with other published results. The structural investigation showed that the films formed at thickness 100 nm showed (111) strong reflection along with weak reflections of (101) corresponding to the growth of single phase Ag2O with cubic structure. Dark and illuminated I-V of p-Ag2O/p-Si, p-Ag2O/n-Si, Al/p-PSi/Al, Al/n-PSi/Al, p-Ag2O/p-PSi/c-Si and p-Ag2O/n-PSi/c-Si heterojunction were investigated, discussed and prepared at optimum condition (oxidation temperature 350 °C and 90 s oxidation time with thickness 100 nm). Ohmic contacts were fabricated by evaporating 99.999 purity silver wires for back and aluminum wires for front contact, respectively.

  20. New Approach to Chemically Induced Silicon Oxidation

    DTIC Science & Technology

    1991-10-01

    Kim, C.H. Wolowodiuk, R.J. Jaccodine, F.A. Stevie , and P.M. Kohora, to be published in J. Electrochem. Society. 4. "Effect of NF3 Addition on Point...Defect Generation at the Oxidizing Interface", U.S. Kim, R.J. Jaccodine, F.A. Stevie , and T. Kook, to be published in J. Electrochem. Society. 5...Macfarlane, R.J. Jaccodine and F.A. Stevie , presented at the 180th Meeting of the Electro- chemical Society, Phoenix, AZ, October 13-18, 1991. 15

  1. Annealing of ultrathin silicon dioxide layers plasma oxidized in ultrahigh vacuum

    NASA Astrophysics Data System (ADS)

    Majamaa, T.; Kilpelä, O.; Novikov, S.; Sinkkonen, J.

    1999-04-01

    Ultrathin silicon dioxide layers have been fabricated by the room temperature plasma oxidation of silicon in ultrahigh vacuum. Silicon-silicon dioxide interface state densities of 10 11 eV -1 cm -2 in the mid-gap can be reached without any annealing. The oxide charge, however, is then quite high. By using post metallization annealing in 300°C or post oxidation UHV annealing in 750°C the surface state densities can slightly be decreased. The oxide charge can be totally removed in 750°C. Neither of these annealings decrease the oxide thickness.

  2. New perspectives on thermal and hyperthermal oxidation of silicon surfaces

    NASA Astrophysics Data System (ADS)

    Khalilov, Umedjon

    The growth of (ultra)thin silica (SiO2) layers on crystalline silicon (c-Si) and controlling the thickness of SiO2 is an important issue in the fabrication of microelectronics and photovoltaic devices (e.g., MOSFETs, solar cells, optical fibers etc.). Such ultrathin oxide can be grown and tuned even at low temperature (including room temperature), by hyperthermal oxidation or when performed on non-planar Si surfaces (e.g., Si nanowires or spheres). However, hyperthermal silica growth as well as small Si-NW oxidation in general and the initial stages in particular have not yet been investigated in full detail. This work is therefore devoted to controlling ultrathin silica thickness on planar and non-planar Si surfaces, which can open new perspectives in nanodevice fabrication. The simulation of hyperthermal (1-100 eV) Si oxidation demonstrate that at low impact energy (<10 eV), oxygen does not damage the Si surface and this energy region could thus beneficially be used for Si oxidation. In contrast to thermal oxidation, 10 eV species can directly oxidize Si subsurface layers. A transition temperature of about 700 K was found: below this temperature, the oxide thickness only depends on the impact energy of the impinging species. Above this temperature, the oxide thickness depends on the impact energy, type of oxidant and the surface temperature. The results show that control over the ultrathin oxide (a-SiO2) thickness is possible by hyperthermal oxidation of silicon surfaces at temperatures below the transition temperature. In small Si-NWs, oxidation is a self-limiting process that occurs at low temperature, resulting in small Si core - SiO2 shell (semiconductor + dielectric) or c-Si|SiOx| a-SiO2 nanowire, which has also being envisaged to be used as nanowire field-effect transistors and photovoltaic devices in near-future nanotechnology. Above the transition temperature such core-shell nanowires are completely converted to a-SiO2 nanowires. It can be concluded that

  3. Four-wave mixing based widely tunable wavelength conversion using 1-m dispersion-shifted bismuth-oxide photonic crystal fiber.

    PubMed

    Chow, K K; Kikuchi, K; Nagashima, T; Hasegawa, T; Ohara, S; Sugimoto, N

    2007-11-12

    We demonstrate widely tunable wavelength conversion based on four-wave mixing using a dispersion-shifted bismuth-oxide photonic crystal fiber (Bi-PCF). A 1-meter-long Bi-PCF is used as the nonlinear medium for wavelength conversion of a 10 Gb/s non-return-to-zero (NRZ) signal. A 3- dB working range of the converted signal over 35 nm is obtained with around 1-dB power penalty in the bit-error-rate measurements.

  4. Method for removing oxide contamination from silicon carbide powders

    DOEpatents

    Brynestad, J.; Bamberger, C.E.

    1984-08-01

    The described invention is directed to a method for removing oxide contamination in the form of oxygen-containing compounds such as SiO/sub 2/ and B/sub 2/O/sub 3/ from a charge of finely divided silicon carbide. The silicon carbide charge is contacted with a stream of hydrogen fluoride mixed with an inert gas carrier such as argon at a temperature in the range of about 200/sup 0/ to 650/sup 0/C. The oxides in the charge react with the heated hydrogen fluoride to form volatile gaseous fluorides such as SiF/sub 4/ and BF/sub 3/ which pass through the charge along with unreacted hydrogen fluoride and the carrier gas. Any residual gaseous reaction products and hydrogen fluoride remaining in the charge are removed by contacting the charge with the stream of inert gas which also cools the powder to room temperature. The removal of the oxygen contamination by practicing the present method provides silicon carbide powders with desirable pressing and sintering characteristics. 1 tab.

  5. Enhanced photoelectrochemical water oxidation on bismuth vanadate by electrodeposition of amorphous titanium dioxide.

    PubMed

    Eisenberg, David; Ahn, Hyun S; Bard, Allen J

    2014-10-08

    n-BiVO4 is a promising semiconductor material for photoelectrochemical water oxidation. Although most thin-film syntheses yield discontinuous BiVO4 layers, back reduction of photo-oxidized products on the conductive substrate has never been considered as a possible energy loss mechanism in the material. We report that a 15 s electrodeposition of amorphous TiO2 (a-TiO2) on W:BiVO4/F:SnO2 blocks this undesired back reduction and dramatically improves the photoelectrochemical performance of the electrode. Water oxidation photocurrent increases by up to 5.5 times, and its onset potential shifts negatively by ∼500 mV. In addition to blocking solution-mediated recombination at the substrate, the a-TiO2 film-which is found to lack any photocatalytic activity in itself-is hypothesized to react with surface defects and deactivate them toward surface recombination. The proposed treatment is simple and effective, and it may easily be extended to a wide variety of thin-film photoelectrodes.

  6. Efficient photovoltaic heterojunctions of indium tin oxides on silicon

    NASA Technical Reports Server (NTRS)

    Dubow, J. B.; Sites, J. R.; Burk, D. E.

    1976-01-01

    Heterojunction diodes of indium tin oxide films sputtered on to p-silicon using ion-beam techniques display significant photovoltaic effects when exposed to sunlight. Galvanomagnetic and optical measurements confirm that the oxide films are highly degenerate transparent semiconductors. At a tin oxide concentration of 10%, an open-circuit voltage of 0.51 V was observed along with a short-circuit current of 32 mA/sq cm, a fill factor of 0.70, and a conversion efficiency of 12%. As the concentration was raised to 70%, the voltage remained steady, the current fell to 27 mA/sq cm, and the fill factor fell to 0.60

  7. Thermal oxidation of 3C silicon carbide single-crystal layers on silicon

    NASA Technical Reports Server (NTRS)

    Fung, C. D.; Kopanski, J. J.

    1984-01-01

    Thermal oxidation of thick single-crystal 3C SiC layers on silicon substrates was studied. The oxidations were conducted in a wet O2 atmosphere at temperatures from 1000 to 1250 C for times from 0.1 to 50 h. Ellipsometry was used to determine the thickness and index of refraction of the oxide films. Auger analysis showed them to be homogeneous with near stoichiometric composition. The oxide growth followed a linear parabolic relationship with time. Activation energy of the parabolic rate constant was found to be 50 kcal/mole, while the linear rate constant was 74 kcal/mole. The latter value corresponds approximately to the energy required to break a Si-C bond. Electrical measurements show an effective density of 4-6 x 10 to the 11th per sq cm for fixed oxide charges at the oxide-carbide interface, and the dielectric strength of the oxide film is aproximately 6 x 10 to the 6th V/cm.

  8. Effect of hydrogen passivation on the photoluminescence of Tb ions in silicon rich silicon oxide films

    NASA Astrophysics Data System (ADS)

    Zatryb, G.; Klak, M. M.; Wojcik, J.; Misiewicz, J.; Mascher, P.; Podhorodecki, A.

    2015-12-01

    In this work, silicon-rich silicon oxide films containing terbium were prepared by means of plasma enhanced chemical vapor deposition. The influence of hydrogen passivation on defects-mediated non-radiative recombination of excited Tb3+ ions was investigated by photoluminescence, photoluminescence excitation, and photoluminescence decay measurements. Passivation was found to have no effect on shape and spectral position of the excitation spectra. In contrast, a gradual increase in photoluminescence intensity and photoluminescence decay time was observed upon passivation for the main 5D4-7F5 transition of Tb3+ ions. This observation was attributed to passivation of non-radiative recombination defects centers with hydrogen. It was found that the number of emitted photons increases upon passivation as a result of two effects: (1) longer Tb3+ lifetime in the 5D4 excited state and (2) optical activation of new Tb3+ emitters. The obtained results were discussed and compared with other experimental reports.

  9. Process to produce silicon carbide fibers using a controlled concentration of boron oxide vapor

    NASA Technical Reports Server (NTRS)

    Barnard, Thomas Duncan (Inventor); Lipowitz, Jonathan (Inventor); Nguyen, Kimmai Thi (Inventor)

    2001-01-01

    A process for producing polycrystalline silicon carbide by heating an amorphous ceramic fiber that contains silicon and carbon in an environment containing boron oxide vapor. The boron oxide vapor is produced in situ by the reaction of a boron containing material such as boron carbide and an oxidizing agent such as carbon dioxide, and the amount of boron oxide vapor can be controlled by varying the amount and rate of addition of the oxidizing agent.

  10. Process to produce silicon carbide fibers using a controlled concentration of boron oxide vapor

    NASA Technical Reports Server (NTRS)

    Barnard, Thomas Duncan (Inventor); Lipowitz, Jonathan (Inventor); Nguyen, Kimmai Thi (Inventor)

    2000-01-01

    A process for producing polycrystalline silicon carbide includes heating an amorphous ceramic fiber that contains silicon and carbon in an environment containing boron oxide vapor. The boron oxide vapor is produced in situ by the reaction of a boron containing material such as boron carbide and an oxidizing agent such as carbon dioxide, and the amount of boron oxide vapor can be controlled by varying the amount and rate of addition of the oxidizing agent.

  11. Oxidation Behavior of Carbon Fiber Reinforced Silicon Carbide Composites

    NASA Technical Reports Server (NTRS)

    Valentin, Victor M.

    1995-01-01

    Carbon fiber reinforced Silicon Carbide (C-SiC) composites offer high strength at high temperatures and good oxidation resistance. However, these composites present some matrix microcracks which allow the path of oxygen to the fiber. The aim of this research was to study the effectiveness of a new Silicon Carbide (SiC) coating developed by DUPONT-LANXIDE to enhance the oxidation resistance of C-SiC composites. A thermogravimetric analysis was used to determine the oxidation rate of the samples at different temperatures and pressures. The Dupont coat proved to be a good protection for the SiC matrix at temperatures lower than 1240 C at low and high pressures. On the other hand, at temperatures above 1340 C the Dupont coat did not seem to give good protection to the composite fiber and matrix. Even though some results of the tests have been discussed, because of time restraints, only a small portion of the desired tests could be completed. Therefore, no major conclusions or results about the effectiveness of the coat are available at this time.

  12. Oxidation threshold in silicon etching at cryogenic temperatures

    SciTech Connect

    Tillocher, T.; Dussart, R.; Mellhaoui, X.; Lefaucheux, P.; Maaza, N. Mekkakia; Ranson, P.; Boufnichel, M.; Overzet, L.J.

    2006-07-15

    In silicon etching in SF{sub 6}/O{sub 2} plasmas, an oxidation threshold appears when the oxygen content is large enough. A SiO{sub x}F{sub y} passivation layer is formed under such conditions. This threshold is reached at lower oxygen proportions if the substrate is cooled down to cryogenic temperatures. In this article, we present a mass spectrometry study of this oxidation threshold in different experimental conditions (temperature, source rf power, self-bias) on bare silicon wafers. The presence of the threshold is clearly evident in the signals of many ions, for example, SiF{sub 3}{sup +}, F{sup +}, and SOF{sub 2}{sup +}. This helps us to determine the main reactions which can occur in the SF{sub 6}/O{sub 2} plasma in our experimental conditions. This threshold appears for higher oxygen proportions when either the source power or the chuck self-bias is increased. The ion bombardment transfers energy to the surface and makes the film desorb. A model, describing the oxygen coverage as a function of the parameters mentioned above, is proposed to interpret these results. Data presented in this article give another point of view of the cryogenic etching process. They contribute to explain how anisotropic profiles can be achieved at low temperature. Surfaces subjected to ion bombardment (the bottom of the structures) are below the oxidation threshold while the structures sidewalls, not subjected to ion bombardment, are in passivating regime.

  13. Phase transitions in ferroelectric silicon doped hafnium oxide

    NASA Astrophysics Data System (ADS)

    Böscke, T. S.; Teichert, St.; Bräuhaus, D.; Müller, J.; Schröder, U.; Böttger, U.; Mikolajick, T.

    2011-09-01

    We investigated phase transitions in ferroelectric silicon doped hafnium oxide (FE-Si:HfO2) by temperature dependent polarization and x-ray diffraction measurements. If heated under mechanical confinement, the orthorhombic ferroelectric phase reversibly transforms into a phase with antiferroelectric behavior. Without confinement, a transformation into a monoclinic/tetragonal phase mixture is observed during cooling. These results suggest the existence of a common higher symmetry parent phase to the orthorhombic and monoclinic phases, while transformation between these phases appears to be inhibited by an energy barrier.

  14. Enhanced room temperature oxidation in silicon and porous silicon under 10 keV x-ray irradiation

    SciTech Connect

    Ryckman, Judson D.; Reed, Robert A.; Weller, Robert A.; Fleetwood, D. M.; Weiss, S. M.

    2010-12-01

    We report the observation of enhanced oxidation on silicon and porous silicon samples exposed in air ambient to high-dose-rate 10 keV x-ray radiation at room temperature. The evolution of the radiation-induced oxide growth is monitored by ellipsometry and interferometric reflectance spectroscopy. Fourier transform infrared (FTIR) spectroscopy shows the emergence of Si-O-Si stretching modes and corresponding suppression of SiH{sub x} and Si-Si modes in the porous silicon samples. The radiation response depends strongly on initial native oxide thickness and Si-H surface species. The enhanced oxidation mechanism is attributed to photoinduced oxidation processes wherein energetic photons are used to dissociate molecular oxygen and promote the formation of more reactive oxygen species.

  15. Effect of Graphene Oxide on the Properties of Porous Silicon.

    PubMed

    Olenych, Igor B; Aksimentyeva, Olena I; Monastyrskii, Liubomyr S; Horbenko, Yulia Yu; Partyka, Maryan V; Luchechko, Andriy P; Yarytska, Lidia I

    2016-12-01

    We studied an effect of the graphene oxide (GO) layer on the optical and electrical properties of porous silicon (PS) in hybrid PS-GO structure created by electrochemical etching of silicon wafer and deposition of GO from water dispersion on PS. With the help of scanning electron microscopy (SEM), atomic-force microscopy (AFM), and Fourier transform infrared (FTIR) spectroscopy, it was established that GO formed a thin film on the PS surface and is partly embedded in the pores of PS. A comparative analysis of the FTIR spectra for the PS and PS-GO structures confirms the passivation of the PS surface by the GO film. This film has a sufficient transparency for excitation and emission of photoluminescence (PL). Moreover, GO modifies PL spectrum of PS, shifting the PL maximum by 25 nm towards lower energies. GO deposition on the surface of the porous silicon leads to the change in the electrical parameters of PS in AC and DC modes. By means of current-voltage characteristics (CVC) and impedance spectroscopy, it is shown that the impact of GO on electrical characteristics of PS manifests in reduced capacitance and lower internal resistance of hybrid structures.

  16. Effect of Graphene Oxide on the Properties of Porous Silicon

    NASA Astrophysics Data System (ADS)

    Olenych, Igor B.; Aksimentyeva, Olena I.; Monastyrskii, Liubomyr S.; Horbenko, Yulia Yu.; Partyka, Maryan V.; Luchechko, Andriy P.; Yarytska, Lidia I.

    2016-02-01

    We studied an effect of the graphene oxide (GO) layer on the optical and electrical properties of porous silicon (PS) in hybrid PS-GO structure created by electrochemical etching of silicon wafer and deposition of GO from water dispersion on PS. With the help of scanning electron microscopy (SEM), atomic-force microscopy (AFM), and Fourier transform infrared (FTIR) spectroscopy, it was established that GO formed a thin film on the PS surface and is partly embedded in the pores of PS. A comparative analysis of the FTIR spectra for the PS and PS-GO structures confirms the passivation of the PS surface by the GO film. This film has a sufficient transparency for excitation and emission of photoluminescence (PL). Moreover, GO modifies PL spectrum of PS, shifting the PL maximum by 25 nm towards lower energies. GO deposition on the surface of the porous silicon leads to the change in the electrical parameters of PS in AC and DC modes. By means of current-voltage characteristics (CVC) and impedance spectroscopy, it is shown that the impact of GO on electrical characteristics of PS manifests in reduced capacitance and lower internal resistance of hybrid structures.

  17. Silicon and tungsten oxide nanostructures for water splitting

    NASA Astrophysics Data System (ADS)

    Reyes Gil, Karla R.; Spurgeon, Joshua M.; Lewis, Nathan S.

    2009-08-01

    Inorganic semiconductors are promising materials for driving photoelectrochemical water-splitting reactions. However, there is not a single semiconductor material that can sustain the unassisted splitting of water into H2 and O2. Instead, we are developing a three part cell design where individual catalysts for water reduction and oxidation will be attached to the ends of a membrane. The job of splitting water is therefore divided into separate reduction and oxidation reactions, and each catalyst can be optimized independently for a single reaction. Silicon might be suitable to drive the water reduction. Inexpensive highly ordered Si wire arrays were grown on a single crystal wafer and transferred into a transparent, flexible polymer matrix. In this array, light would be absorbed along the longer axial dimension while the resulting electrons or holes would be collected along the much shorter radial dimension in a massively parallel array resembling carpet fibers on a microscale, hence the term "solar carpet". Tungsten oxide is a good candidate to drive the water oxidation. Self-organized porous tungsten oxide was successfully synthesized on the tungsten foil by anodization. This sponge-like structure absorbs light efficiently due to its high surface area; hence we called it "solar sponge".

  18. Edge determination for polycrystalline silicon lines on gate oxide

    NASA Astrophysics Data System (ADS)

    Villarrubia, John S.; Vladar, Andras E.; Lowney, Jeremiah R.; Postek, Michael T., Jr.

    2001-08-01

    In a scanning electron microscope (SEM) top-down secondary electron image, areas within a few tens of nanometers of the line edges are characteristically brighter than the rest of the image. In general, the shape of the secondary electron signal within such edge regions depends upon the energy and spatial distribution of the electron beam and the sample composition, and it is sensitive to small variations in sample geometry. Assigning edge shape and position is done by finding a model sample that is calculated, on the basis of a mathematical model of the instrument-sample interaction, to produce an image equal to the one actually observed. Edge locations, and consequently line widths, are then assigned based upon this model sample. In previous years we have applied this strategy to lines with geometry constrained by preferential etching of single crystal silicon. With this study we test the procedure on polycrystalline silicon lines. Polycrystalline silicon lines fabricated according to usual industrial processes represent a commercially interesting albeit technically more challenging application of this method. With the sample geometry less constrained a priori, a larger set of possible sample geometries must be modeled and tested for a match to the observed line scan, and the possibility of encountering multiple acceptable matches is increased. For this study we have implemented a data analysis procedure that matches measured image line scans to a precomputed library of sample shapes and their corresponding line scans. Linewidth test patterns containing both isolated and dense lines separated form the underlying silicon substrate by a thin gate oxide have been fabricated. Line scans from test pattern images have been fitted to the library of modeled shapes.

  19. Anisotropic interpolation method of silicon carbide oxidation growth rates for three-dimensional simulation

    NASA Astrophysics Data System (ADS)

    Šimonka, Vito; Nawratil, Georg; Hössinger, Andreas; Weinbub, Josef; Selberherr, Siegfried

    2017-02-01

    We investigate anisotropical and geometrical aspects of hexagonal structures of Silicon Carbide and propose a direction dependent interpolation method for oxidation growth rates. We compute three-dimensional oxidation rates and perform one-, two-, and three-dimensional simulations for 4H- and 6H-Silicon Carbide thermal oxidation. The rates of oxidation are computed according to the four known growth rate values for the Si- (0 0 0 1) , a- (1 1 2 bar 0) , m- (1 1 bar 0 0) , and C-face (0 0 0 1 bar) . The simulations are based on the proposed interpolation method together with available thermal oxidation models. We additionally analyze the temperature dependence of Silicon Carbide oxidation rates for different crystal faces using Arrhenius plots. The proposed interpolation method is an essential step towards highly accurate three-dimensional oxide growth simulations which help to better understand the anisotropic nature and oxidation mechanism of Silicon Carbide.

  20. A new bismuth potassium nitrate oxide, Bi 1.7K 0.9O 2(NO 3) 2: Synthesis, structure, thermal behavior, and photocatalytic properties

    NASA Astrophysics Data System (ADS)

    Shenawi-Khalil, S.; Uvarov, V.; Charkin, D. O.; Goaz, A.; Popov, I.; Dolgikh, V. A.; Sasson, Y.

    2012-01-01

    We report here the first observation of a bismuth potassium nitrate Bi 1.7K 0.9O 2(NO 3) 2, obtained via thermal decomposition of bismuth and potassium nitrate mixtures. The new compound is orthorhombic, space group Immm (71), Z = 2, with a = 3.8698(7) Å, b = 3.8703(7) Å, and c = 24.1271(4) Å. Its crystal structure was refined from powder X-ray diffraction data by analogy with the mineral beyerite, Bi 2O 2Ca(CO 3) 2. The morphology and elemental composition of Bi 1.7K 0.9O 2(NO 3) 2 were characterized using scanning electron microscopy (SEM) with energy dispersive X-Ray spectroscopy (EDS). Its phase transformations upon heating and products of its thermal decomposition were studied using XRD, TGA and FTIR. At 440 °C, Bi 1.7K 0.9O 2(NO 3) 2 transforms to another basic bismuth potassium nitrate with demonstrates a very similar XRD pattern but slightly larger cell parameters. At 520 °C, the intermediate oxide nitrate decomposes into a mixture of crystalline α-Bi 2O 3 and KNO 3. The as prepared Bi 1.7K 0.9O 2(NO 3) 2 showed lower than TiO 2 (Degussa P25) photocatalytic activity upon decomposition of a widely used model pollutant, Rhodamine B (RhB) and photooxidation of potassium iodide under UV-vis light irradiation. Interaction with potassium iodide in alkaline media resulted in formation of Bi 5O 7I.

  1. 22.5% efficient silicon heterojunction solar cell with molybdenum oxide hole collector

    SciTech Connect

    Geissbühler, Jonas Werner, Jérémie; Martin de Nicolas, Silvia; Hessler-Wyser, Aïcha; Tomasi, Andrea; Niesen, Bjoern; De Wolf, Stefaan; Barraud, Loris; Despeisse, Matthieu; Nicolay, Sylvain; Ballif, Christophe

    2015-08-24

    Substituting the doped amorphous silicon films at the front of silicon heterojunction solar cells with wide-bandgap transition metal oxides can mitigate parasitic light absorption losses. This was recently proven by replacing p-type amorphous silicon with molybdenum oxide films. In this article, we evidence that annealing above 130 °C—often needed for the curing of printed metal contacts—detrimentally impacts hole collection of such devices. We circumvent this issue by using electrodeposited copper front metallization and demonstrate a silicon heterojunction solar cell with molybdenum oxide hole collector, featuring a fill factor value higher than 80% and certified energy conversion efficiency of 22.5%.

  2. Single crystal ternary oxide ferroelectric integration with Silicon

    NASA Astrophysics Data System (ADS)

    Bakaul, Saidur; Serrao, Claudy; Youun, Long; Khan, Asif; Salahuddin, Sayeef

    2015-03-01

    Integrating single crystal, ternary oxide ferroelectric thin film with Silicon or other arbitrary substrates has been a holy grail for the researchers since the inception of microelectronics industry. The key motivation is that adding ferroelectric materials to existing electronic devices could bring into new functionality, physics and performance improvement such as non-volatility of information, negative capacitance effect and lowering sub-threshold swing of field effect transistor (FET) below 60 mV/decade in FET [Salahuddin, S, Datta, S. Nano Lett. 8, 405(2008)]. However, fabrication of single crystal ferroelectric thin film demands stringent conditions such as lattice matched single crystal substrate and high processing temperature which are incompatible with Silicon. Here we report on successful integration of PbZr0.2Ti0.8O3 in single crystal form with by using a layer transfer method. The lattice structure, surface morphology, piezoelectric coefficient d33, dielectric constant, ferroelectric domain switching and spontaneous and remnant polarization of the transferred PZT are as good as these characteristics of the best PZT films grown by pulsed laser deposition on lattice matched oxide substrates. We also demonstrate Si based, FE gate controlled FET devices.

  3. Oxidized silicon nanoparticles for radiosensitization of cancer and tissue cells.

    PubMed

    Klein, Stefanie; Dell'Arciprete, Maria L; Wegmann, Marc; Distel, Luitpold V R; Neuhuber, Winfried; Gonzalez, Mónica C; Kryschi, Carola

    2013-05-03

    The applicability of ultrasmall uncapped and aminosilanized oxidized silicon nanoparticles (SiNPs and NH2-SiNPs) as radiosensitizer was studied by internalizing these nanoparticles into human breast cancer (MCF-7) and mouse fibroblast cells (3T3) that were exposed to X-rays at a single dose of 3 Gy. While SiNPs did not increase the production of reactive oxygen species (ROS) in X-ray treated cells, the NH2-SiNPs significantly enhanced the ROS formation. This is due to the amino functionality as providing positive surface charges in aqueous environment. The NH2-SiNPs were observed to penetrate into the mitochondrial membrane, wherein these nanoparticles provoked oxidative stress. The NH2-SiNPs induced mitochondrial ROS production was confirmed by the determination of an increased malondialdehyde level as representing a gauge for the extent of membrane lipid peroxidation. X-ray exposure of NH2-SiNPs incubated MCF-7 and 3T3 cells increased the ROS concentration for 180%, and 120%, respectively. Complementary cytotoxicity studies demonstrate that these silicon nanoparticles are more cytotoxic for MCF-7 than for 3T3 cells.

  4. Fabrication of p-type porous silicon nanowire with oxidized silicon substrate through one-step MACE

    SciTech Connect

    Li, Shaoyuan; Ma, Wenhui; Zhou, Yang; Chen, Xiuhua; Xiao, Yongyin; Ma, Mingyu; Wei, Feng; Yang, Xi

    2014-05-01

    In this paper, the simple pre-oxidization process is firstly used to treat the starting silicon wafer, and then MPSiNWs are successfully fabricated from the moderately doped wafer by one-step MACE technology in HF/AgNO{sub 3} system. The PL spectrum of MPSiNWs obtained from the oxidized silicon wafers show a large blue-shift, which can be attributed to the deep Q. C. effect induced by numerous mesoporous structures. The effects of HF and AgNO{sub 3} concentration on formation of SiNWs were carefully investigated. The results indicate that the higher HF concentration is favorable to the growth of SiNWs, and the density of SiNWs is significantly reduced when Ag{sup +} ions concentrations are too high. The deposition behaviors of Ag{sup +} ions on oxidized and unoxidized silicon surface were studied. According to the experimental results, a model was proposed to explain the formation mechanism of porous SiNWs by etching the oxidized starting silicon. - Graphical abstract: Schematic cross-sectional views of PSiNWs array formation by etching oxidized silicon wafer in HF/AgNO{sub 3} solution. (A) At the starting point; (B) during the etching process; and (C) after Ag dendrites remove. - Highlights: • Prior to etching, a simple pre-oxidation is firstly used to treat silicon substrate. • The medially doped p-type MPSiNWs are prepared by one-step MACE. • Deposition behaviors of Ag{sup +} ions on oxidized and unoxidized silicon are studied. • A model is finally proposed to explain the formation mechanism of PSiNWs.

  5. Metal and silicon oxides as efficient catalysts for the preparative organic chemistry

    NASA Astrophysics Data System (ADS)

    Titova, Yu A.; Fedorova, O. V.; Rusinov, G. L.; Charushin, V. N.

    2015-12-01

    Data on the use of metal and silicon oxides as catalysts of reactions which are most in demand in laboratory organic syntheses are summarized. The potential of oxide catalysts for optimization of organic reactions is demonstrated, and some mechanistic aspects of oxide action are considered. Published data on the synthetic use of single, mixed, bulk and nanosized metal and silicon oxides are presented. Bibliography — 189 references.

  6. Fabrication of silicon oxide nanodots with an areal density beyond 1 teradots inch(-2).

    PubMed

    Xu, Ji; Hong, Sung Woo; Gu, Weiyin; Lee, Kim Y; Kuo, David S; Xiao, Shuaigang; Russell, Thomas P

    2011-12-22

    The combination of solvent annealing, surface reconstruction, and a tone-reversal etching procedure provides an attractive approach to utilize block copolymer (BCP) lithography to fabricate highly ordered and densely packed silicon oxide nano-dots on a surface. The obtained silicon oxide nano-dots feature an areal density of 1.3 teradots inch(-2) .

  7. Research of materials for porous matrices in sol-gel systems based on silicon dioxide and metallic oxides

    NASA Astrophysics Data System (ADS)

    Maraeva, E. V.; Bobkov, A. A.; Maximov, A. I.; Moshnikov, V. A.; Nalimova, S. S.

    2015-11-01

    In this study silicon dioxide - stannic oxide and silicon dioxide - zinc nanomaterials oxide were obtained through sol-gel technology. The results of nitrogen thermal desorption measurements, atomic force microscopy measurements and particle sizes measurements are discussed.

  8. Visible light photocatalytic degradation of dyes by bismuth oxide-reduced graphene oxide composites prepared via microwave-assisted method.

    PubMed

    Liu, Xinjuan; Pan, Likun; Lv, Tian; Sun, Zhuo; Sun, Chang Q

    2013-10-15

    Bi2O3-reduced graphene oxide (RGO) composites were successfully synthesized via microwave-assisted reduction of graphite oxide in Bi2O3 precursor solution using a microwave system. Their morphologies, structures, and photocatalytic performance in the degradation of methylene blue (MB) and methyl orange (MO) were characterized by scanning electron microscopy, transmission electron microscopy, X-ray diffraction spectroscopy, UV-vis absorption spectroscopy, and electrochemical impedance spectroscopy, respectively. The results show that the RGO addition can enhance the photocatalytic performance of Bi2O3-RGO composites. Bi2O3-RGO composite with 2 wt.% RGO achieves maximum MO and MB degradation rates of 93% and 96% at 240min under visible light irradiation, respectively, much higher than those for the pure Bi2O3 (78% and 76%). The enhanced photocatalytic performance is ascribed to the increased light adsorption and the reduction in electron-hole pair recombination in Bi2O3 with the introduction of RGO.

  9. Effect of phase stability degradation of bismuth on sensor characteristics of nano-bismuth fixed electrode.

    PubMed

    Lee, Gyoung-Ja; Kim, Chang Kyu; Lee, Min Ku; Rhee, Chang Kyu

    2010-12-15

    Effect of phase stability degradation of bismuth on sensor characteristics of nano-bismuth fixed electrode has been investigated using square-wave anodic stripping voltammetry technique, scanning electron microscopy (SEM) and X-ray diffraction (XRD) spectroscopy. From the analyses of square-wave anodic stripping voltammograms (SWASV) repetitively measured on the nano-bismuth fixed electrode, it was found that the oxidation peak currents dropped by 81%, 68% and 59% for zinc, cadmium and lead, respectively, after the 100th measurement (about 400 min of operation time). The sphere bismuth nanoparticles gradually changed to the agglomerates with petal shape as the operation time increased. From the analyses of SEM images and XRD patterns, it is confirmed that the oxidation of Bi into BiOCl/Bi(2)O(2)CO(3) and the agglomeration of bismuth nanoparticles caused by the phase change decrease a reproducibility of the stripping voltammetric response. Moreover, most of the bismuth becomes BiOCl at pH 3.0 and bismuth hydroxide, Bi(OH)(3) at pH 7.0, which results in a significant decrease in sensitivity of the nano-bismuth fixed electrode.

  10. Tantalum oxide/silicon nitride: A negatively charged surface passivation stack for silicon solar cells

    SciTech Connect

    Wan, Yimao Bullock, James; Cuevas, Andres

    2015-05-18

    This letter reports effective passivation of crystalline silicon (c-Si) surfaces by thermal atomic layer deposited tantalum oxide (Ta{sub 2}O{sub 5}) underneath plasma enhanced chemical vapour deposited silicon nitride (SiN{sub x}). Cross-sectional transmission electron microscopy imaging shows an approximately 2 nm thick interfacial layer between Ta{sub 2}O{sub 5} and c-Si. Surface recombination velocities as low as 5.0 cm/s and 3.2 cm/s are attained on p-type 0.8 Ω·cm and n-type 1.0 Ω·cm c-Si wafers, respectively. Recombination current densities of 25 fA/cm{sup 2} and 68 fA/cm{sup 2} are measured on 150 Ω/sq boron-diffused p{sup +} and 120 Ω/sq phosphorus-diffused n{sup +} c-Si, respectively. Capacitance–voltage measurements reveal a negative fixed insulator charge density of −1.8 × 10{sup 12 }cm{sup −2} for the Ta{sub 2}O{sub 5} film and −1.0 × 10{sup 12 }cm{sup −2} for the Ta{sub 2}O{sub 5}/SiN{sub x} stack. The Ta{sub 2}O{sub 5}/SiN{sub x} stack is demonstrated to be an excellent candidate for surface passivation of high efficiency silicon solar cells.

  11. Monolayer Contact Doping from a Silicon Oxide Source Substrate.

    PubMed

    Ye, Liang; González-Campo, Arántzazu; Kudernac, Tibor; Núñez, Rosario; de Jong, Michel; van der Wiel, Wilfred G; Huskens, Jurriaan

    2017-04-03

    Monolayer contact doping (MLCD) is a modification of the monolayer doping (MLD) technique that involves monolayer formation of a dopant-containing adsorbate on a source substrate. This source substrate is subsequently brought into contact with the target substrate, upon which the dopant is driven into the target substrate by thermal annealing. Here, we report a modified MLCD process, in which we replace the commonly used Si source substrate by a thermally oxidized substrate with a 100 nm thick silicon oxide layer, functionalized with a monolayer of a dopant-containing silane. The thermal oxide potentially provides a better capping effect and effectively prevents the dopants from diffusing back into the source substrate. The use of easily accessible and processable silane monolayers provides access to a general and modifiable process for the introduction of dopants on the source substrate. As a proof of concept, a boron-rich carboranyl-alkoxysilane was used here to construct the monolayer that delivers the dopant, to boost the doping level in the target substrate. X-ray photoelectron spectroscopy (XPS) showed a successful grafting of the dopant adsorbate onto the SiO2 surface. The achieved doping levels after thermal annealing were similar to the doping levels acessible by MLD as demonstrated by secondary ion mass spectrometry measurements. The method shows good prospects, e.g. for use in the doping of Si nanostructures.

  12. Oxidatively Stable Nanoporous Silicon Photocathodes for Photoelectrochemical Hydrogen Evolution

    SciTech Connect

    Neale, Nathan R.; Zhao, Yixin; Zhu, Kai; Oh, Jihun; van de Lagemaat, Jao; Yuan, Hao-Chih; Branz, Howard M.

    2014-06-02

    Stable and high-performance nanoporous 'black silicon' photoelectrodes with electrolessly deposited Pt nanoparticle (NP) catalysts are made with two metal-assisted etching steps. Doubly etched samples exhibit >20 mA/cm2 photocurrent density at +0.2 V vs. reversible hydrogen electrode (RHE) for photoelectrochemical hydrogen evolution under 1 sun illumination. We find that the photocurrent onset voltage of black Si photocathodes prepared from single-crystal planar Si wafers increases in oxidative environments (e.g., aqueous electrolyte) owing to a positive flat-band potential shift caused by surface oxidation. However, this beneficial oxide layer becomes a kinetic barrier to proton reduction that inhibits hydrogen production after just 24 h. To mitigate this problem, we developed a novel second Pt-assisted etch process that buries the Pt NPs deeper into the nanoporous Si surface. This second etch shifts the onset voltage positively, from +0.25 V to +0.4 V vs. RHE, and reduces the charge-transfer resistance with no performance decrease seen for at least two months.

  13. Structure of silicon oxide films prepared by vacuum deposition

    NASA Astrophysics Data System (ADS)

    Saito, Yoshio; Kaito, Chihiro; Nishio, Kenzo; Naiki, Toshio

    1985-05-01

    The structure of thin silicon oxide films 5 nm in thickness, which were prepared by electron beam evaporation of SiO 2 glass onto a NaCl substrate, has been examined by high resolution electron microscopy and diffraction. Although the films which were prepared with substrate temperatures ranging from room up to 400°C gave rise to amorphous haloes, lattice fringes in areas 1-2 nm in extent were, however, seen in the micrographs. It is shown that the film is composed of α-quartz micro-crystallites. Crystals of α-cristobalite with sizes of several tens of nanometers appeared at a substrate temperature of 500°C. At a substrate temperature of 600°C, β-cristobalite crystals with sizes of several tens of nanometers appeared. The structural changes due to the substrate temperature were attributed to incorporation of sodium atoms from the substrate into the SiO 2 film.

  14. Novel synthetic methodology for controlling the orientation of zinc oxide nanowires grown on silicon oxide substrates

    NASA Astrophysics Data System (ADS)

    Cho, Jinhyun; Salleh, Najah; Blanco, Carlos; Yang, Sungwoo; Lee, Chul-Jin; Kim, Young-Woo; Kim, Jungsang; Liu, Jie

    2014-03-01

    This study presents a simple method to reproducibly obtain well-aligned vertical ZnO nanowire arrays on silicon oxide (SiOx) substrates using seed crystals made from a mixture of ammonium hydroxide (NH4OH) and zinc acetate (Zn(O2CCH3)2) solution. In comparison, high levels of OH- concentration obtained using NaOH or KOH solutions lead to incorporation of Na or K atoms into the seed crystals, destroying the c-axis alignment of the seeds and resulting in the growth of misaligned nanowires. The use of NH4OH eliminates the metallic impurities and ensures aligned nanowire growth in a wide range of OH- concentrations in the seed solution. The difference of crystalline orientations between NH4OH- and NaOH-based seeds is directly observed by lattice-resolved images and electron diffraction patterns using a transmission electron microscope (TEM). This study obviously suggests that metallic impurities incorporated into the ZnO nanocrystal seeds are one of the factors that generates the misaligned ZnO nanowires. This method also enables the use of silicon oxide substrates for the growth of vertically aligned nanowires, making ZnO nanostructures compatible with widely used silicon fabrication technology.This study presents a simple method to reproducibly obtain well-aligned vertical ZnO nanowire arrays on silicon oxide (SiOx) substrates using seed crystals made from a mixture of ammonium hydroxide (NH4OH) and zinc acetate (Zn(O2CCH3)2) solution. In comparison, high levels of OH- concentration obtained using NaOH or KOH solutions lead to incorporation of Na or K atoms into the seed crystals, destroying the c-axis alignment of the seeds and resulting in the growth of misaligned nanowires. The use of NH4OH eliminates the metallic impurities and ensures aligned nanowire growth in a wide range of OH- concentrations in the seed solution. The difference of crystalline orientations between NH4OH- and NaOH-based seeds is directly observed by lattice-resolved images and electron

  15. Thermal degradation of ultrabroad bismuth NIR luminescence in bismuth-doped tantalum germanate laser glasses.

    PubMed

    Wang, Liping; Zhao, Yanqi; Xu, Shanhui; Peng, Mingying

    2016-04-01

    Because of ultra-broadband luminescence in 1000-1700 nm and consequent applications in fiber amplifier and lasers in the new spectral range where traditional rare earth cannot work, bismuth-doped laser glasses have received rising interest recently. For long-term practical application, thermal degradation must be considered for the glasses. This, however, has seldom been investigated. Here we report the thermal degradation of bismuth-doped germanate glass. Heating and cooling cycle experiments at high temperature reveal strong dependence of the thermal degradation on glass compositions. Bismuth and tantalum lead to the reversible degradation, while lithium can produce permanent irreversible degradation. The degradation becomes worse as lithium content increases in the glass. Absorption spectra show this is due to partial oxidation of bismuth near-infrared emission center. Surprisingly, we notice the emission of bismuth exhibits blueshift, rather than redshift at a higher temperature, and the blueshift can be suppressed by increasing the lithium content.

  16. Studies on Thermal and Mechanical Properties of Epoxy-Silicon Oxide Hybrid Materials

    NASA Astrophysics Data System (ADS)

    Ghosh, P. K.; Kumar, Kaushal; Kumar, Arun

    2015-11-01

    Ultrasonic dual mixing (UDM) process involving ultrasonic vibration with simultaneous stirring is used to prepare epoxy-silicon oxide hybrid materials with inorganic nanoscale building blocks by incorporating nanoscale silicon oxide network in epoxy matrix. The silicon oxide network is obtained from tetraethoxysilane (TEOS) by using the in situ sol-gel process. Same epoxy-silica hybrid materials were also prepared by mixing with simple impeller stirring, and its properties were compared with the material of same composition prepared by the UDM process. The epoxy-silicon oxide hybrid materials are characterized by using FT-IR, DSC, FESEM, and XRD techniques. The glass transition temperature, tensile strength, and elastic modulus of the epoxy-silicon oxide hybrid materials treated by UDM process are found comparatively better than those of the materials processed by a rotating impeller. FESEM studies confirm that amount of TEOS varies the distribution and size of silicon oxide network, which remains relatively finer at lower content of TEOS. Significant improvement of thermal and mechanical properties of the neat epoxy is noted in the presence of 3.05 wt.% TEOS content in it is giving rise to the formation of inorganic building block of silicon oxide of size 88 ± 45 nm in the matrix. In this regard, the use of UDM process is found superior to mixing by simple impeller stirring for enhancement of properties of epoxy-silicon oxide hybrid materials. Lowering of properties of the epoxy-silicon oxide hybrid materials with TEOS addition beyond 3.05 wt.% up to 6.1 wt.% occurs primarily due to increase of amount and size (up to 170 ± 82 nm) of the inorganic building block in the matrix.

  17. Serum protein layers on parylene-C and silicon oxide: effect on cell adhesion.

    PubMed

    Delivopoulos, Evangelos; Ouberai, Myriam M; Coffey, Paul D; Swann, Marcus J; Shakesheff, Kevin M; Welland, Mark E

    2015-02-01

    Among the range of materials used in bioengineering, parylene-C has been used in combination with silicon oxide and in presence of the serum proteins, in cell patterning. However, the structural properties of adsorbed serum proteins on these substrates still remain elusive. In this study, we use an optical biosensing technique to decipher the properties of fibronectin (Fn) and serum albumin adsorbed on parylene-C and silicon oxide substrates. Our results show the formation of layers with distinct structural and adhesive properties. Thin, dense layers are formed on parylene-C, whereas thicker, more diffuse layers are formed on silicon oxide. These results suggest that Fn acquires a compact structure on parylene-C and a more extended structure on silicon oxide. Nonetheless, parylene-C and silicon oxide substrates coated with Fn host cell populations that exhibit focal adhesion complexes and good cell attachment. Albumin adopts a deformed structure on parylene-C and a globular structure on silicon oxide, and does not support significant cell attachment on either surface. Interestingly, the co-incubation of Fn and albumin at the ratio found in serum, results in the preferential adsorption of albumin on parylene-C and Fn on silicon oxide. This finding is supported by the exclusive formation of focal adhesion complexes in differentiated mouse embryonic stem cells (CGR8), cultured on Fn/albumin coated silicon oxide, but not on parylene-C. The detailed information provided in this study on the distinct properties of layers of serum proteins on substrates such as parylene-C and silicon oxide is highly significant in developing methods for cell patterning.

  18. Energetics of bismuth vanadate

    SciTech Connect

    Nagabhushana, G.P.; Tavakoli, A.H.; Navrotsky, A.

    2015-05-15

    Bismuth vanadate has gained considerable interest as a photoanode for water splitting reactions under visible light. It exists in four different polymorphs, out of which three of them have been synthesized. Thermodynamic properties of these three polymorphs are investigated using high temperature oxide melt solution calorimetry. The monoclinic scheelite phase which exhibits photocatalytic activity under visible light is found to be the most stable polymorph, followed by tetragonal scheelite which exhibits activity under UV light. The photocatalytically inactive tetragonal zircon form is found to be the least stable polymorph. The small difference in enthalpy of formation between the two scheelite structures (−8 kJ/mol) is in accord with the reversibility of the transformation between them and the larger difference between the most stable monoclinic phase and the least stable tetragonal zircon phase (−23 kJ/mol) is in accord with the irreversible (monoclinic→tetragonal zircon) phase transformation. - Graphical abstract: Schematic representation of polymorphic transitions in BiVO{sub 4} along with their formation enthalpies. - Highlights: • Bismuth vanadate crystallizes in three different polymorphs. • High temperature calorimetric measurements were made to determine their formation enthalpies. • Enthalpy of formation decreases in the order BV-ms→BV-ts→BV-tz. • Photocatalytically active monoclinic-BiVO{sub 4} was found to be the most stable polymorph.

  19. X-ray reflectivity study of formation of multilayer porous anodic oxides of silicon.

    SciTech Connect

    Chu, Y.; Fenollosa, R.; Parkhutik, V.; You, H.

    1999-07-21

    The paper reports data on the kinetics of anodic oxide films growth on silicon in aqueous solutions of phosphoric acids as well as a study of the morphology of the oxides grown in a special regime of the oscillating anodic potential. X-ray reflectivity measurements were performed on the samples of anodic oxides using an intense synchrotron radiation source. They have a multilayer structure as revealed by theoretical fitting of the reflectivity data. The oscillations of the anodic potential are explained in terms of synchronized oxidation/dissolution reactions at the silicon surface and accumulation of mechanic stress in the oxide film.

  20. Monolithic integration of rare-earth oxides and semiconductors for on-silicon technology

    SciTech Connect

    Dargis, Rytis Clark, Andrew; Erdem Arkun, Fevzi; Grinys, Tomas; Tomasiunas, Rolandas; O'Hara, Andy; Demkov, Alexander A.

    2014-07-01

    Several concepts of integration of the epitaxial rare-earth oxides into the emerging advanced semiconductor on silicon technology are presented. Germanium grows epitaxially on gadolinium oxide despite lattice mismatch of more than 4%. Additionally, polymorphism of some of the rare-earth oxides allows engineering of their crystal structure from hexagonal to cubic and formation of buffer layers that can be used for growth of germanium on a lattice matched oxide layer. Molecular beam epitaxy and metal organic chemical vapor deposition of gallium nitride on the rare-earth oxide buffer layers on silicon is discussed.

  1. High-temperature oxidation behavior of reaction-formed silicon carbide ceramics

    NASA Technical Reports Server (NTRS)

    Ogbuji, Linus U. J. T.; Singh, M.

    1995-01-01

    The oxidation behavior of reaction-formed silicon carbide (RFSC) ceramics was investigated in the temperature range of 1100 to 1400 C. The oxidation weight change was recorded by TGA; the oxidized materials were examined by light and electron microscopy, and the oxidation product by x-ray diffraction analysis (XRD). The materials exhibited initial weight loss, followed by passive weight gain (with enhanced parabolic rates, k(sub p)), and ending with a negative (logarithmic) deviation from the parabolic law. The weight loss arose from the oxidation of residual carbon, and the enhanced k(sub p) values from internal oxidation and the oxidation of residual silicon, while the logarithmic kinetics is thought to have resulted from crystallization of the oxide. The presence of a small amount of MoSi, in the RFSC material caused a further increase in the oxidation rate. The only solid oxidation product for all temperatures studied was silica.

  2. Structural alloy with a protective coating containing silicon or silicon-oxide

    DOEpatents

    Natesan, K.

    1992-01-01

    This invention is comprised of an iron-based alloy containing chromium and optionally, nickel. The alloy has a surface barrier of silicon or silicon plus oxygen which converts at high temperature to a protective silicon compound. The alloy can be used in oxygen-sulfur mixed gases at temperatures up to about 1100{degrees}C.

  3. Structural alloy with a protective coating containing silicon or silicon-oxide

    DOEpatents

    Natesan, K.

    1994-12-27

    An iron-based alloy is described containing chromium and optionally, nickel. The alloy has a surface barrier of silicon or silicon plus oxygen which converts at high temperature to a protective silicon compound. The alloy can be used in oxygen-sulfur mixed gases at temperatures up to about 1100 C. 8 figures.

  4. Structural alloy with a protective coating containing silicon or silicon-oxide

    DOEpatents

    Natesan, Ken

    1994-01-01

    An iron-based alloy containing chromium and optionally, nickel. The alloy has a surface barrier of silicon or silicon plus oxygen which converts at high temperature to a protective silicon compound. The alloy can be used in oxygen-sulfur mixed gases at temperatures up to about 1100.degree. C.

  5. Silicon nanoprofiling with the use of a solid aluminum oxide mask and combined 'dry' etching

    SciTech Connect

    Belov, A. N.; Demidov, Yu. A.; Putrya, M. G.; Golishnikov, A. A.; Vasilyev, A. A.

    2009-12-15

    Technological features of nanoprofiling of silicon protected by a solid mask based on porous aluminum oxide are considered. It is shown that, for a nanoprofiled silicon surface to be formed, it is advisable that combined dry etching be used including preliminary bombardment of structures with accelerated neutral atoms of an inert gas followed by reactive ion etching.

  6. Short circuit current in indium tin oxide/silicon solar cells

    NASA Astrophysics Data System (ADS)

    Singh, R.

    1980-09-01

    The short-circuit current density of indium tin oxide/single and polycrystalline silicon solar cells reported by Schunck and Coche (1979) is much higher than other silicon solar cells. It is shown that the short-circuit current density reported in the above reference does not represent the true value of these devices.

  7. Method of fabricating conducting oxide-silicon solar cells utilizing electron beam sublimation and deposition of the oxide

    DOEpatents

    Feng, Tom; Ghosh, Amal K.

    1979-01-01

    In preparing tin oxide and indium tin oxide-silicon heterojunction solar cells by electron beam sublimation of the oxide and subsequent deposition thereof on the silicon, the engineering efficiency of the resultant cell is enhanced by depositing the oxide at a predetermined favorable angle of incidence. Typically the angle of incidence is between 40.degree. and 70.degree. and preferably between 55.degree. and 65.degree. when the oxide is tin oxide and between 40.degree. and 70.degree. when the oxide deposited is indium tin oxide. gi The Government of the United States of America has rights in this invention pursuant to Department of Energy Contract No. EY-76-C-03-1283.

  8. Method for forming indium oxide/n-silicon heterojunction solar cells

    DOEpatents

    Feng, Tom; Ghosh, Amal K.

    1984-03-13

    A high photo-conversion efficiency indium oxide/n-silicon heterojunction solar cell is spray deposited from a solution containing indium trichloride. The solar cell exhibits an Air Mass One solar conversion efficiency in excess of about 10%.

  9. Synchrotron x-ray reflectivity study of oxidation/passivation of copper and silicon.

    SciTech Connect

    Chu, Y.; Nagy, Z.; Parkhutik, V.; You, H.

    1999-07-21

    Synchrotron x-ray-scattering technique studies of copper and silicon electrochemical interfaces are reported. These two examples illustrate the application of synchrotron x-ray techniques for oxidation, passivation, and dissolution of metals and semiconductors.

  10. Microstructure, toughness and flexural strength of self-reinforced silicon nitride ceramics doped with yttrium oxide and ytterbium oxide.

    PubMed

    Zheng, Y. S.; Knowles, K. M.; Vieira, J. M.; Lopes, A. B.; Oliveira, F. J.

    2001-02-01

    Self-reinforced silicon nitride ceramics with additions of either yttrium oxide or ytterbium oxide have been investigated at room temperature after various processing heat treatments. Devitrification of the intergranular phase in these materials is very sensitive to the heat treatment used during processing and does not necessarily improve their strength and toughness. Hot-pressed ceramics without a subsequent devitrification heat treatment were the strongest. The ytterbium oxide-doped silicon nitride ceramics were consistently tougher, but less strong, than the yttrium oxide-doped silicon nitride ceramics. In all the ceramics examined, the fracture toughness showed evidence for R-curve behaviour. This was most significant in pressureless sintered ytterbium oxide-doped silicon nitride ceramics. A number of toughening mechanisms, including crack deflection, bridging, and fibre-like grain pull-out, were observed during microstructural analysis of the ceramics. In common with other silicon nitride-based ceramics, thin amorphous films were found at the grain boundaries in each of the ceramics examined. Arrays of dislocations left in the elongated silicon nitride grains after processing were found to belong to the {101;0}<0001> primary slip system.

  11. Energetics of bismuth vanadate

    NASA Astrophysics Data System (ADS)

    Nagabhushana, G. P.; Tavakoli, A. H.; Navrotsky, A.

    2015-05-01

    Bismuth vanadate has gained considerable interest as a photoanode for water splitting reactions under visible light. It exists in four different polymorphs, out of which three of them have been synthesized. Thermodynamic properties of these three polymorphs are investigated using high temperature oxide melt solution calorimetry. The monoclinic scheelite phase which exhibits photocatalytic activity under visible light is found to be the most stable polymorph, followed by tetragonal scheelite which exhibits activity under UV light. The photocatalytically inactive tetragonal zircon form is found to be the least stable polymorph. The small difference in enthalpy of formation between the two scheelite structures (-8 kJ/mol) is in accord with the reversibility of the transformation between them and the larger difference between the most stable monoclinic phase and the least stable tetragonal zircon phase (-23 kJ/mol) is in accord with the irreversible (monoclinic→tetragonal zircon) phase transformation.

  12. Silicon oxide permeation barrier coating of PET bottles and foils

    NASA Astrophysics Data System (ADS)

    Steves, Simon; Deilmann, Michael; Awakowicz, Peter

    2009-10-01

    Modern packaging materials such as polyethylene terephthalate (PET) have displaced established materials in many areas of food and beverage packaging. Plastic packing materials offer are various advantages concerning production and handling. PET bottles for instance are non-breakable and lightweight compared to glass and metal containers. However, PET offers poor barrier properties against gas permeation. Therefore, the shelf live of packaged food is reduced. Permeation of gases can be reduced by depositing transparent plasma polymerized silicon oxide (SiOx) barrier coatings. A microwave (2.45 GHz) driven low pressure plasma reactor is developed based on a modified Plasmaline antenna to treat PET foils or bottles. To increase the barrier properties of the coatings furthermore a RF substrate bias (13.56 MHz) is applied. The composition of the coatings is analyzed by means of Fourier transform infrared (FTIR) spectroscopy regarding carbon and hydrogen content. Influence of gas phase composition and substrate bias on chemical composition of the coatings is discussed. A strong relation between barrier properties and film composition is found: good oxygen barriers are observed as carbon content is reduced and films become quartz-like. Regarding oxygen permeation a barrier improvement factor (BIF) of 70 is achieved.

  13. Crystalline Silicon/Graphene Oxide Hybrid Junction Solar Cells

    NASA Astrophysics Data System (ADS)

    Liu, Qiming; Wanatabe, Fumiya; Hoshino, Aya; Ishikawa, Ryo; Gotou, Takuya; Ueno, Keiji; Shirai, Hajime

    2012-10-01

    Soluble graphene oxide (GO) and plasma-reduced (pr-) GO were investigated using crystalline silicon (c-Si) (100)/GO/pr-GO hybrid junction solar cells. Their photovoltaic performances were compared with those of c-Si/GO/pristine conductive poly(ethylene dioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) heterojunction and c-Si/PEDOT:PSS:GO composite devices. The c-Si/GO/pr-GO and conductive PEDOT:PSS/Al heterojunction solar cells showed power conversion efficiencies of 6.5 and 8.2%, respectively, under illumination with AM 1.5 G 100 mW/cm2 simulated solar light. A higher performance of 10.7% was achieved using the PEDOT:PSS:GO (12.5 wt %) composite device. These findings imply that soluble GO, pr-GO, and the PEDOT:PSS:GO composite are promising materials as hole transport and transparent conductive layers for c-Si/organic hybrid junction solar cells.

  14. Resistive Switching and Memory effects in Silicon Oxide Based Nanostructures

    NASA Astrophysics Data System (ADS)

    Yao, Jun

    Silicon oxide (SiOx 1 < x ≦2) has long been used and considered as a passive and insulating component in the construction of electronic devices. In contrast, here the active role of SiOx in constructing a type of resistive switching memory is studied. From electrode-independent electrical behaviors to the visualization of the conducting filament inside the SiOx matrix, the intrinsic switching picture in SiOx is gradually revealed. The thesis starts with the introduction of some similar phenomenological switching behaviors in different electronic structures (Chapter 1), and then generalizes the electrode-material-independent electrical behaviors on SiOx substrates, providing indirect evidence to the intrinsic SiOx switching (Chapter 2). From planar nanogap systems to vertical sandwiched structures, Chapter 3 further discusses the switching behaviors and properties in SiOx. By localization of the switching site, the conducting filament in SiOx is visualized under transmission electron microscope using both static and in situ imaging methods (Chapter 4). With the intrinsic conduction and switching in SiO x largely revealed, Chapter 5 discusses its impact and implications to the molecular electronics and nanoelectronics where SiOx is constantly used. As comparison, another type of memory effect in semiconductors (carbon nanotubes) based on charge trapping at the semiconductor/SiO x interface is discussed (Chapter 6).

  15. Cobalt silicon mixed oxide nanocomposites by modified sol gel method

    NASA Astrophysics Data System (ADS)

    Esposito, Serena; Turco, Maria; Ramis, Gianguido; Bagnasco, Giovanni; Pernice, Pasquale; Pagliuca, Concetta; Bevilacqua, Maria; Aronne, Antonio

    2007-12-01

    Cobalt-silicon mixed oxide materials (Co/Si=0.111, 0.250 and 0.428) were synthesised starting from Co(NO 3) 2·6H 2O and Si(OC 2H 5) 4 using a modified sol-gel method. Structural, textural and surface chemical properties were investigated by thermogravimetric/differential thermal analyses (TG/DTA), XRD, UV-vis, FT-IR spectroscopy and N 2 adsorption at -196 °C. The nature of cobalt species and their interactions with the siloxane matrix were strongly depending on both the cobalt loading and the heat treatment. All dried gels were amorphous and contained Co 2+ ions forming both tetrahedral and octahedral complexes with the siloxane matrix. After treatment at 400 °C, the sample with lowest Co content appeared amorphous and contained only Co 2+ tetrahedral complexes, while at higher cobalt loading Co 3O 4 was present as the only crystalline phase, besides Co 2+ ions strongly interacting with siloxane matrix. At 850 °C, in all samples crystalline Co 2SiO 4 was formed and was the only crystallising phase for the nanocomposite with the lowest cobalt content. All materials retained high surface areas also after treatments at 600 °C and exhibited surface Lewis acidity, due to cationic sites. The presence of cobalt affected the textural properties of the siloxane matrix decreasing microporosity and increasing mesoporosity.

  16. Degenerate epitaxy-driven defects in monolayer silicon oxide on ruthenium

    NASA Astrophysics Data System (ADS)

    Mathur, Shashank; Vlaic, Sergio; Machado-Charry, Eduardo; Vu, Anh-Duc; Guisset, Valérie; David, Philippe; Hadji, Emmanuel; Pochet, Pascal; Coraux, Johann

    2015-10-01

    The structure of the ultimately thin crystalline allotrope of silicon oxide, prepared on a ruthenium surface, is unveiled down to the atomic scale with chemical sensitivity, owing to high resolution scanning tunneling microscopy and first principles calculations. An ordered oxygen lattice is imaged which coexists with the two-dimensional monolayer oxide. This coexistence signals a displacive transformation from an oxygen-reconstructed Ru(0001) to silicon oxide, along which laterally shifted domains form, each with equivalent and degenerate epitaxial relationships with the substrate. The unavoidable character of defects at the boundaries between these domains appeals for the development of alternative methods capable of producing single-crystalline two-dimensional oxides.

  17. Surface heterogeneity of passively oxidized silicon carbide particles: vapor adsorption isotherms.

    PubMed

    Médout-Marère, V; Partyka, S; Dutartre, R; Chauveteau, G; Douillard, J M

    2003-06-15

    The surfaces of silicon carbide particles subjected to two different passive oxidation treatments have been characterized by immersion calorimetry and vapor adsorption techniques. Surface enthalpies and surface free energies have been computed using semiempirical models and are compared to theoretical estimations. The surface entropy term appears higher than in the case of other solids studied with the same analysis. The definition of the surface entropy term is discussed in order to explain the discrepancy between calculation and experiment. An explanation of results is proposed, which is related to the constitution of silicon oxide layers at the surface of silicon carbide, a fact demonstrated by previous XPS measurements.

  18. Process for depositing an oxide epitaxially onto a silicon substrate and structures prepared with the process

    DOEpatents

    McKee, Rodney A.; Walker, Frederick J.

    1993-01-01

    A process and structure involving a silicon substrate utilizes an ultra high vacuum and molecular beam epitaxy (MBE) methods to grow an epitaxial oxide film upon a surface of the substrate. As the film is grown, the lattice of the compound formed at the silicon interface becomes stabilized, and a base layer comprised of an oxide having a sodium chloride-type lattice structure grows epitaxially upon the compound so as to cover the substrate surface. A perovskite may then be grown epitaxially upon the base layer to render a product which incorporates silicon, with its electronic capabilities, with a perovskite having technologically-significant properties of its own.

  19. Active Oxidation of Liquid Silicon in the Presence of Hydrogen: Extension of the Ratto Model

    NASA Astrophysics Data System (ADS)

    Vadon, Mathieu; Delannoy, Yves; Chichignoud, Guy

    2017-03-01

    The rate of oxidation of silicon has been studied in the presence of hydrogen, in order to predict the rate of boron removal from liquid silicon in liquid/gas processes where a chemical equilibrium exists at the surface. A new 1D model for the reactive boundary layer above liquid silicon has been developed from existing literature, adding two gaseous species H2 and H2O. The classical model (O2 only) gives a layer of silica aerosol just above the surface, for oxygen pressures above some pascals. Adding some hydrogen, this layer is displaced away from the silicon and vanishes if the hydrogen ratio is sufficient. We applied this model on liquid silicon oxidation experiments with theoretically predicted mass boundary layer thicknesses for impinging jets. The needed thickness to reproduce the experimental purification rate on our plasma process is compatible with our model.

  20. Effects of oxygen content and oxide layer thickness on interface state densities for metal-oxynitride-oxide-silicon devices

    NASA Astrophysics Data System (ADS)

    Xu, Dan; Kapoor, Vik J.

    1991-08-01

    The interface state density of metal-oxynitride-oxide-silicon (MNOS) devices was investigated as a function of the tunnel oxide thickness and the amount of oxygen in the oxynitride films. Nitrous oxide gas was used to introduce oxygen into the oxynitride film during the deposition process. As 17 at. % oxygen was introduced into the oxynitride film, the lowest oxide-silicon interface state density increased from 3.0 to 3.5×1011 cm-2 eV-1 for 90-Å oxide MNOS devices, and decreased from 5.1 to 3.65×1011 cm-2 eV-1 for 20 Å oxide devices. The increase in interface state density with increasing oxygen for 90-Å oxide devices may be due to an increase in the loss of hydrogen passivation at the interfacial regions as more oxygen is introduced into the film. The higher interface state density for the 20 vs 90 Å oxide samples, for a given oxygen content of the oxynitride films, may be due to additional contributions from the trapping states near or at the oxide-oxynitride interface. However, the decrease in the interface state density for increasing oxygen concentration for 20-Å oxide MNOS devices may be due to passivation of trapping states at the oxide-oxynitride interface by oxygen. The silicon dangling bonds responsible for these trapping states may be compensated by oxygen introduced during the deposition process.

  1. Annealing and oxidation of silicon oxide films prepared by plasma-enhanced chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Chen, X. Y.; Lu, Y. F.; Tang, L. J.; Wu, Y. H.; Cho, B. J.; Xu, X. J.; Dong, J. R.; Song, W. D.

    2005-01-01

    We have investigated phase separation, silicon nanocrystal (Si NC) formation and optical properties of Si oxide (SiOx, 0oxidation. The SiOx films were deposited by plasma-enhanced chemical vapor deposition at different nitrous-oxide/silane flow ratios. The physical and optical properties of the SiOx films were studied as a result of high-vacuum annealing and thermal oxidation. X-ray photoelectron spectroscopy (XPS) reveals that the as-deposited films have a random-bonding or continuous-random-network structure with different oxidation states. After annealing at temperatures above 1000 °C, the intermediate Si continuum in XPS spectra (referring to the suboxide) split to Si peaks corresponding to SiO2 and elemental Si. This change indicates the phase separation of the SiOx into more stable SiO2 and Si clusters. Raman, high-resolution transmission electron microscopy and optical absorption confirmed the phase separation and the formation of Si NCs in the films. The size of Si NCs increases with increasing Si concentration in the films and increasing annealing temperature. Two photoluminescence (PL) bands were observed in the films after annealing. The ultraviolet (UV)-range PL with a peak fixed at 370-380 nm is independent of Si concentration and annealing temperature, which is a characteristic of defect states. Strong PL in red range shows redshifts from ˜600 to 900 nm with increasing Si concentration and annealing temperature, which supports the quantum confinement model. After oxidation of the high-temperature annealed films, the UV PL was almost quenched while the red PL shows continuous blueshifts with increasing oxidation time. The different oxidation behaviors further relate the UV PL to the defect states and the red PL to the recombination of quantum-confined excitions.

  2. In situ transmission infrared spectroscopy of high-kappa oxide atomic layer deposition onto silicon surfaces

    NASA Astrophysics Data System (ADS)

    Ho, Ming-Tsung

    Ultra-thin aluminum oxide (Al2O3) and hafnium oxide (HfO2) layers have been grown by atomic layer deposition (ALD) using tri-methyl-aluminum (TMA) and tetrakis-ethyl-methyl-amino-hafnium (TEMAH) respectively with heavy water (D2O) as the oxidizing agent. Several different silicon surfaces were used as substrates such as hydrogen terminated silicon (H/Si), SC2 (or RCA 2) cleaned native silicon oxide (SiO 2/Si), and silicon (oxy)nitride. In-situ transmission Fourier transform infrared spectroscopy (FTIR) has been adopted for the study of the growth mechanisms during ALD of these films. The vibrational spectra of gas phase TEMAH and its reaction byproducts with oxidants have also been investigated. Density functional theory (DFT) normal mode calculations show a good agreement with the experimental data when it is combined with linear wave-number scaling method and Fermi resonance mechanism. Ether (-C-O-C-) and tertiary alkylamine (N(R1R 2R3)) compounds are the two most dominant products of TEMAH reacting with oxygen gas and water. When ozone is used as the oxidant, gas phase CH2O, CH3NO2, CH3-N=C=O and other compounds containing -(C=O)- and --C-O-C- (or --O-C-) segments are observed. With substrate temperatures less than 400°C and 300°C for TMA and TEMAH respectively, Al oxide and Hf oxide ALD can be appropriately performed on silicon surfaces. Thin silicon (oxy)nitride thermally grown in ammonia on silicon substrate can significantly reduce silicon oxide interlayer formation during ALD and post-deposition annealing. The crystallization temperature of amorphous ALD grown HfO2 on nitridized silicon is 600°C, which is 100°C higher than on the other silicon surfaces. When HfO2 is grown on H/Si(111) at 100°C deposition temperature, minimum 5--10 ALD cycles are required for the full surface coverage. The steric effect can be seen by the evolution of the H-Si stretching mode at 2083 cm-1. The observed red shift of H-Si stretching to ˜ 2060 cm-1 can be caused by Si

  3. Effect of cold rolling on the oxidation resistance of T91 steel in oxygen-saturated stagnant liquid lead-bismuth eutectic at 450 °C and 550 °C

    NASA Astrophysics Data System (ADS)

    Dong, Hong; Ye, Zhongfei; Wang, Pei; Li, Dianzhong; Zhang, Yutuo; Li, Yiyi

    2016-08-01

    The compatibility of T91 steels having different preparation processes with oxygen-saturated stagnant lead-bismuth eutectic have been investigated at 450 °C and 550 °C. It is found that cold rolling decreases the thickness of the oxide scale of T91 steel by forming a continuous enhanced Cr-rich belt in the inner oxide layer next to the internal oxidation zone, which is attributed to the rapid diffusion of Cr induced by numerous non-equilibrium grain boundaries and migrating dislocations.

  4. 1/f noise in thin oxide p-channel metal-nitride-oxide-silicon transistors

    NASA Astrophysics Data System (ADS)

    Maes, Herman E.; Usmani, Sabir H.

    1983-04-01

    The 1/f noise behavior of p-channel metal-nitride-oxide-silicon transistors is presented. Devices with different oxide thicknesses, geometries and different technological treatments were used for this study. It is shown that the noise behavior can be well explained quantitatively with the number fluctuation model developed for MOS transistors. The close correlation between the increase of the noise and of the interface state density after different levels of degradation indeed indicates that the exchange of carriers between the channel and the interface traps lies at the origin of the 1/f noise. The observed degradation in MNOS devices is consistent with a diffusion controlled model for the creation of surface traps but is found to be a saturating effect. The predictions of the mobility fluctuation model are not confirmed in our experiments.

  5. Formation of ultrathin nitrided SiO{sub 2} oxides by direct nitrogen implantation into silicon

    SciTech Connect

    Soleimani, H.R.; Doyle, B.S.; Philipossian, A.

    1995-08-01

    A nitridation technique is proposed for ultrathin, SiO{sub 2} oxides in deep submicron CMOS technology, which involves direct implantation of molecular nitrogen (N{sub 2}) into the silicon substrate. N{sub 2} ions were implanted into silicon at different doses and energies, through a 150 {angstrom} thick screen oxide. In this study the effect of implanted N atoms on silicon oxidation, and SiO{sub 2} oxide nitridation process have been studied. Two groups of the N{sub 2}-implanted wafers were used: wafers from one group were annealed prior to the screen oxide removal, whereas wafers of the other group did not receive this anneal. It is shown that nitridation can be achieved both ways, allowing this technique to be easily integrated into a semiconductor IC fabrication process.

  6. Ab-initio simulations on initial growth steps of high-K oxides on silicon

    NASA Astrophysics Data System (ADS)

    Bloechl, Peter E.

    2003-03-01

    One of the most acute challenges of semiconductor industry is the introduction of new so-called high-K gate oxides. Conventional SiO2 based gate oxides need to be replaced in order to avoid quantum mechanical leakage currents through ultrathin oxide layers. State of the art electronic structure calculations and ab-initio molecular dynamics simulations of the deposition of metals onto silicon and the formation of oxides have been performed. Atomic structure, chemical binding and electronic structure have been analyzed for a wide range of different adsorption structures of Zr, Hf, and Sr on silicon. Silicide formation and the step-wise formation of the oxides have been investigated. Particular emphasis will be given to the formation of the interface between SrTiO3 and silicon (001).

  7. Method for one-to-one polishing of silicon nitride and silicon oxide

    NASA Technical Reports Server (NTRS)

    Babu, Suryadevara V. (Inventor); Natarajan, Anita (Inventor)

    2009-01-01

    The present invention provides a method of removing silicon nitride at about the same removal rate as silicon dioxide by CMP. The method utilizes a polishing slurry that includes colloidal silica abrasive particles dispersed in water and additives that modulate the silicon dioxide and silicon nitride removal rates such that they are about the same. In one embodiment of the invention, the additive is lysine or lysine mono hydrochloride in combination with picolinic acid, which is effective at a pH of about 8. In another embodiment of the invention, the additive is arginine in combination with picolinic acid, which is effective at a pH of about 10.

  8. Synthesis and Characterization of Microwave-Exfoliated Graphene Oxide-Wrapped Silicon Nanowire via Hydrosilylation.

    PubMed

    Shin, Donghee; Cho, Bomin; Ahn, Jihoon; Kim, Sungsoo; Ko, Young Chun; Sohn, Honglae

    2015-02-01

    Single-crystalline silicon nanowires (SiNWs) were fabricated by using an electroless metal-assisted etching of bulk silicon wafers with silver nanoparticles obtained by wet electroless deposition. The etching of SiNWs is based on sequential treatment in aqueous solutions of silver nitrate followed by hydrofluoric acid and hydrogen peroxide. Free-standing SiNWs were then obtained using ultra-sono method in toluene. Graphene oxide was prepared using the modified Hummers' process. Activated microwave-exfoliated graphite oxide (MEGO) was prepared and used for composition of silicon nanowires and graphene oxide via hydrosilylation. The silicon nanowire-graphene composite materials were characterized using XPS and FE-SEM.

  9. Ethylene oxide-block-butylene oxide copolymer uptake by silicone hydrogel contact lens materials

    NASA Astrophysics Data System (ADS)

    Huo, Yuchen; Ketelson, Howard; Perry, Scott S.

    2013-05-01

    Four major types of silicone hydrogel contact lens material have been investigated following treatments in aqueous solutions containing poly(ethylene oxide) and poly(butylenes oxide) block copolymer (EO-BO). The extent of lens surface modification by EO-BO and the degree of bulk uptake were studied using X-ray photoelectron spectroscopy (XPS) and ultra-performance liquid chromatography (UPLC), respectively. The experimental results suggest that different interaction models exist for the lenses, highlighting the influence of both surface and bulk composition, which greatly differs between the lenses examined. Specifically, lenses with hydrophilic surface treatments, i.e., PureVision® (balafilcon A) and O2OPTIX (lotrafilcon B), demonstrated strong evidence of preferential surface adsorption within the near-surface region. In comparison, surface adsorption on ACUVUE® Oasys® (senofilcon A) and Biofinity® (comfilcon A) was limited. As for bulk absorption, the amount of EO-BO uptake was the greatest for balafilcon A and comfilcon A, and least for lotrafilcon B. These findings confirm the presence of molecular concentration gradients within the silicone hydrogel lenses following exposure to EO-BO solutions, with the nature of such concentration gradients found to be lens-specific. Together, the results suggest opportunities for compositional modifications of lenses for improved performance via solution treatments containing surface-active agents.

  10. Intense green-yellow electroluminescence from Tb+-implanted silicon-rich silicon nitride/oxide light emitting devices

    NASA Astrophysics Data System (ADS)

    Berencén, Y.; Wutzler, R.; Rebohle, L.; Hiller, D.; Ramírez, J. M.; Rodríguez, J. A.; Skorupa, W.; Garrido, B.

    2013-09-01

    High optical power density of 0.5 mW/cm2, external quantum efficiency of 0.1%, and population inversion of 7% are reported from Tb+-implanted silicon-rich silicon nitride/oxide light emitting devices. Electrical and electroluminescence mechanisms in these devices were investigated. The excitation cross section for the 543 nm Tb3+ emission was estimated under electrical pumping, resulting in a value of 8.2 × 10-14 cm2, which is one order of magnitude larger than one reported for Tb3+:SiO2 light emitting devices. These results demonstrate the potentiality of Tb+-implanted silicon nitride material for the development of integrated light sources compatible with Si technology.

  11. First-principles study of the mechanical and optical properties of amorphous hydrogenated silicon and silicon-rich silicon oxide

    NASA Astrophysics Data System (ADS)

    Bondi, Robert J.; Lee, Sangheon; Hwang, Gyeong S.

    2010-05-01

    We use first-principles density-functional theory (DFT) calculations to predict mechanical and optical property variation with composition for hydrogenated amorphous Si (a-Si:H) ( at.%H=0 , 5.9, 11.1, and 15.8) and a-SiOx ( x=0 , 0.5, 1.0, 1.5, and 2.0). A better understanding of the properties of a-Si:H and amorphous silicon oxide (a-SiOx) is technologically important, particularly for photovoltaic and optoelectronic device applications, respectively. However, relatively little reliable property information is available for these amorphous materials except for the well-studied end-point cases of a-Si and a-SiO2 . Our DFT calculations within the generalized gradient approximation predict that addition of H to a-Si monotonically reduces the elastic modulus (Y) by 18% and bulk modulus (B) by 16% as H incorporation increases to 15.8at.% in a-Si:H. Similarly, addition of O to a-Si monotonically reduces Y by 35% and B by 38% as x increases to 2.0 in a-SiOx . Our optical spectra for the complex dielectric function, ɛ(ω) , exhibit intensity reduction in the E2 transition peak of Im[ɛ(ω)] and reduction in the low-frequency dielectric constant {ɛo=limω→0Re[ɛ(ω)]} as either H or O are added to a-Si while the a-SiOx spectra additionally resolve a vivid blueshift of both the fundamental absorption edge and E2 transition energy as O content increases. Considering the large variation in reported experimental measurements and the limited availability of previous computational results, our property predictions provide valuable insight into the mechanical and optical behavior of a-Si:H and a-SiOx materials.

  12. Physical integrated diffusion-oxidation model for implanted nitrogen in silicon

    NASA Astrophysics Data System (ADS)

    Adam, Lahir Shaik; Law, Mark E.; Dokumaci, Omer; Hegde, Suri

    2002-02-01

    Scaling the gate oxide thickness is one of many process development challenges facing device engineers today. Nitrogen implantation has been used to control gate oxide thickness. By varying the dose of the nitrogen implant, process engineers can have multiple gate oxide thicknesses in the same process. Although it has been observed that nitrogen retards gate oxidation kinetics, the physics of how this occurs is not yet well understood. Since the retardation in oxide growth is due to the diffusion of nitrogen and its subsequent incorporation at the silicon/silicon oxide interface, the study of the diffusion behavior of nitrogen in silicon becomes important. Further, it is also necessary to study how this diffusion behavior impacts oxide growth. Models have been developed to explore these issues. The diffusion model is based on ab initio results and is compared to experimental results at two temperatures. The oxide reduction model is based on the diffusion of nitrogen to the surface. The surface nitrogen is coupled to the surface reaction rate of silicon and oxygen to moderate oxide growth.

  13. PHOTOMAGNETOELECTRIC EFFECT OF CDS SINGLE CRYSTALS AND OF BISMUTH ROLLED FOILS. THERMOMAGNETOELECTRIC EFFECT OF CONTACTS BI-CU, GE-CU AND SI-CU.

    DTIC Science & Technology

    CADMIUM SULFIDES, *BISMUTH, TRANSPORT PROPERTIES, TRANSPORT PROPERTIES, SINGLE CRYSTALS, FOILS(MATERIALS), PHOTOCONDUCTIVITY, CHARGE CARRIERS, GERMANIUM, MAGNETIC FIELDS, SEEBECK EFFECT , TEMPERATURE, COPPER, SILICON.

  14. The complex interface chemistry of thin-film silicon/zinc oxide solar cell structures.

    PubMed

    Gerlach, D; Wimmer, M; Wilks, R G; Félix, R; Kronast, F; Ruske, F; Bär, M

    2014-12-21

    The interface between solid-phase crystallized phosphorous-doped polycrystalline silicon (poly-Si(n(+))) and aluminum-doped zinc oxide (ZnO:Al) was investigated using spatially resolved photoelectron emission microscopy. We find the accumulation of aluminum in the proximity of the interface. Based on a detailed photoemission line analysis, we also suggest the formation of an interface species. Silicon suboxide and/or dehydrated hemimorphite have been identified as likely candidates. For each scenario a detailed chemical reaction pathway is suggested. The chemical instability of the poly-Si(n(+))/ZnO:Al interface is explained by the fact that SiO2 is more stable than ZnO and/or that H2 is released from the initially deposited a-Si:H during the crystallization process. As a result, Zn (a deep acceptor in silicon) is "liberated" close to the silicon/zinc oxide interface presenting the inherent risk of forming deep defects in the silicon absorber. These could act as recombination centers and thus limit the performance of silicon/zinc oxide based solar cells. Based on this insight some recommendations with respect to solar cell design, material selection, and process parameters are given for further knowledge-based thin-film silicon device optimization.

  15. Nano crystalline Bi2(VO5) phases in lithium bismuth borate glasses containing mixed vanadium-nickel oxides

    NASA Astrophysics Data System (ADS)

    Yadav, Arti; Khasa, S.; Dahiya, M. S.; Agarwal, A.

    2016-05-01

    Glass composition 7V2O5.23Li2O.20Bi2O3.50B2O3 and x(2NiO.V2O5).(30-x)Li2O.20Bi2O3.50B2O3, x=0, 2, 5, 7 and 10, were produced by conventional melt quenching technique. The quenched amorphous glass samples were annealed at temperatures 400°C and 500°C for 6 hours. The Bi2(VO5) crystallite were grown in all prepared glass matrix. Tn vanadium lithium bismuth borate glass (annealed), the some phrase of V2O5-crystal were observed along with the nano crystalline Bi2(VO5) phase. The sharp peaks in FTTR spectra of all annealed compositions were also compatible with the XRD diffraction peaks of the system under investigation. Average crystalline size (D) of the Bi2(VO5) nano-crystallite was ~30nm for samples annealed at 400°C and ~42nm for samples annealed at 500°C. Lattice parameter and the lattice strain for all the samples was also calculated corresponding to the (113) plane of Bi2(VO5) crystallite.

  16. Super-oxidation of silicon nanoclusters: magnetism and reactive oxygen species at the surface

    SciTech Connect

    Lepeshkin, Sergey; Baturin, Vladimir; Tikhonov, Evgeny; Matsko, Nikita; Uspenskii, Yurii; Naumova, Anastasia; Feya, Oleg; Schoonen, Martin A.; Oganov, Artem R.

    2016-01-01

    Oxidation of silicon nanoclusters depending on the temperature and oxygen pressure is explored from first principles using the evolutionary algorithm, and structural and thermodynamic analysis. From our calculations of 90 SinOm clusters we found that under normal conditions oxidation does not stop at the stoichiometric SiO2 composition, as it does in bulk silicon, but goes further placing extra oxygen atoms on the cluster surface. These extra atoms are responsible for light emission, relevant to reactive oxygen species and many of them are magnetic. We argue that the super-oxidation effect is size-independent and discuss its relevance to nanotechnology and miscellaneous applications, including biomedical ones.

  17. Evaluation of transition metal oxide as carrier-selective contacts for silicon heterojunction solar cells

    SciTech Connect

    Ding, L.; Boccard, Matthieu; Holman, Zachary; Bertoni, M.

    2015-04-06

    "Reducing light absorption in the non-active solar cell layers, while enabling the extraction of the photogenerated minority carriers at quasi-Fermi levels are two key factors to improve current generation and voltage, and therefore efficiency of silicon heterojunction solar devices. To address these two critical aspects, transition metal oxide materials have been proposed as alternative to the n- and p-type amorphous silicon used as electron and hole selective contacts, respectively. Indeed, transition metal oxides such as molybdenum oxide, titanium oxide, nickel oxide or tungsten oxide combine a wide band gap typically over 3 eV with a band structure and theoretical band alignment with silicon that results in high transparency to the solar spectrum and in selectivity for the transport of only one carrier type. Improving carrier extraction or injection using transition metal oxide has been a topic of investigation in the field of organic solar cells and organic LEDs; from these pioneering works a lot of knowledge has been gained on materials properties, ways to control these during synthesis and deposition, and their impact on device performance. Recently, the transfer of some of this knowledge to silicon solar cells and the successful application of some metal oxide to contact heterojunction devices have gained much attention. In this contribution, we investigate the suitability of various transition metal oxide films (molybdenum oxide, titanium oxide, and tungsten oxide) deposited either by thermal evaporation or sputtering as transparent hole or electron selective transport layer for silicon solar cells. In addition to systematically characterize their optical and structural properties, we use photoemission spectroscopy to relate compound stoichiometry to band structure and characterize band alignment to silicon. The direct silicon/metal oxide interface is further analyzed by quasi-steady state photoconductance decay method to assess the quality of surface

  18. Surface modification of silicon oxide with trialkoxysilanes toward close-packed monolayer formation.

    PubMed

    Tanaka, Mutsuo; Sawaguchi, Takahiro; Kuwahara, Masashi; Niwa, Osamu

    2013-05-28

    In order to scrutinize potential of trialkoxysilanes to form close-packed monolayer, surface modification of silicon oxide was carried out with the trialkoxysilanes bearing a ferrocene moiety for analysis by electrochemical methods. As it was found that hydrogen-terminated silicon reacts with trialkoxysilane through natural oxidation in organic solvents, where the silicon oxide layer is thin enough to afford conductivity for electrochemical analysis, hydrogen-terminated silicon wafer was immersed in trialkoxysilane solution for surface modification without oxidation treatment. Cyclic voltammetry measurements to determine surface concentrations of the immobilized ferrocene-silane on silicon surface were carried out with various temperature, concentration, solvent, and molecular structure, while the blocking effect in the cyclic voltammogram was investigated to obtain insight into density leading to the close-packed layer. The results suggested that a monolayer modification tended to occur under milder conditions when the ferrocene-silane had a longer alkyl chain, and formation of a close-packed layer to show significant blocking effect was observed. However, the surface modification proceeded even when surface concentration of the immobilized ferrocene-silane was greater than that expected for the monolayer. On the basis of these tendencies, the surface of silicon oxide modified with trialkoxysilane is considered to be a partial multilayer rather than monolayer although a close-packed layer is formed. This result is supported by the comparison with carbon surface modified with ferrocene-diazonium, in which a significant blocking effect was observed when surface concentrations of the immobilized ferrocene moiety are lower than that for silicon oxide modified with ferrocene-silane.

  19. Low- and high-resistivity silicon substrate characterization using the Al/silicon-rich oxide/Si structure with comparison to the metal oxide semiconductor technique

    NASA Astrophysics Data System (ADS)

    Luna-López, A.; Aceves-Mijares, M.; Malik, O.; Glaenzer, R.

    2005-05-01

    High-resistivity silicon substrates (HRS, NB<1014 cm-3) are commonly used, especially in optoelectronic integrated circuits. However, standard metal oxide semiconductor (MOS) characterization methods fail to predict correctly the dopant concentration and lifetime. This is due to the high resistance in series with the MOS capacitor, which causes an erroneous capacitance measurement at high frequency. To overcome this restriction, a different characterization method is proposed, using the electronic transport property of silicon-rich oxide (SRO) films, with aluminum/silicon-rich oxide (Al/SRO/Si) devices and using capacitance-voltage (C-V) and current-voltage (I-V) characteristics, the dopant concentration and lifetime can be estimated with these method. In addition, using low/high-frequency C-V measurements in MOS structure on HRS can be used to determine the dopant concentration. In this work, low-resistivity silicon and HRS substrates are characterized. The results for both type of substrates and for the different methods are compared. It is shown that the results are similar and any of these methods produce reliable results, but the Al/SRO/Si structure has the advantage that the generation lifetime is easily obtained.

  20. Graphene-Assisted Chemical Etching of Silicon Using Anodic Aluminum Oxides as Patterning Templates.

    PubMed

    Kim, Jungkil; Lee, Dae Hun; Kim, Ju Hwan; Choi, Suk-Ho

    2015-11-04

    We first report graphene-assisted chemical etching (GaCE) of silicon by using patterned graphene as an etching catalyst. Chemical-vapor-deposition-grown graphene transferred on a silicon substrate is patterned to a mesh with nanohole arrays by oxygen plasma etching using an anodic- aluminum-oxide etching mask. The prepared graphene mesh/silicon is immersed in a mixture solution of hydrofluoric acid and hydro peroxide with various molecular fractions at optimized temperatures. The silicon underneath graphene mesh is then selectively etched to form aligned nanopillar arrays. The morphology of the nanostructured silicon can be controlled to be smooth or porous depending on the etching conditions. The experimental results are systematically discussed based on possible mechanisms for GaCE of Si.

  1. TiO2/Ag modified penta-bismuth hepta-oxide nitrate and its adsorption performance for azo dye removal.

    PubMed

    Abdullah, Eshraq Ahmed; Abdullah, Abdul Halim; Zainal, Zulkarnain; Hussein, Mohd Zobir; Ban, Tan Kar

    2012-01-01

    A modified hydrophilic penta-bismuth hepta-oxide nitrate (Bi5O7NO3) surface was synthesized via a precipitation method using TiO2 and Ag as modified agents. The synthesized product was characterized by different analytical techniques. The removal efficiency was evaluated using mono- and di-sulphonated azo dyes as model pollutants. Different kinetic, isotherm and diffusion models were chosen to describe the adsorption process. X-ray photoelectron spectroscopy (XPS) results revealed no noticeable differences in the chemical states of modified adsorbent when compared to pure Bi5O7NO3; however, the presence of hydrophilic centres such as TiO2 and Ag developed positively charged surface groups and improved its adsorption performance to a wide range of azo dyes. Dyes removal was found to be a function of adsorbent dosage, initial dye concentration, solution pH and temperature. The reduction of Langmuir 1,2-mixed order kinetics to the second or first-order kinetics could be successfully used to describe the adsorption of dyes onto the modified adsorbent. Mass transfer can be described by intra-particle diffusion at a certain stage, but it was not the rate limiting step that controlled the adsorption process. Homogenous behavior of adsorbent surface can be explored by applying Langmuir isotherm to fit the adsorption data.

  2. Preparation of highly aligned silicon oxide nanowires with stable intensive photoluminescence

    NASA Astrophysics Data System (ADS)

    Duraia, El-Shazly M.; Mansurov, Z. A.; Tokmolden, S.; Beall, Gary W.

    2010-02-01

    In this work we report the successful formation of highly aligned vertical silicon oxide nanowires. The source of silicon was from the substrate itself without any additional source of silicon. X-ray measurement demonstrated that our nanowires are amorphous. Photoluminescence measurements were conducted through 18 months and indicated that there is a very good intensive emission peaks near the violet regions. The FTIR measurements indicated the existence of peaks at 463, 604, 795 and a wide peak at 1111 cm -1 and this can be attributed to Si-O-Si and Si-O stretching vibrations. We also report the formation of the octopus-like silicon oxide nanowires and the growth mechanism of these structures was discussed.

  3. Synthesis of metal silicide at metal/silicon oxide interface by electronic excitation

    SciTech Connect

    Lee, J.-G.; Nagase, T.; Yasuda, H.; Mori, H.

    2015-05-21

    The synthesis of metal silicide at the metal/silicon oxide interface by electronic excitation was investigated using transmission electron microscopy. A platinum silicide, α-Pt{sub 2}Si, was successfully formed at the platinum/silicon oxide interface under 25–200 keV electron irradiation. This is of interest since any platinum silicide was not formed at the platinum/silicon oxide interface by simple thermal annealing under no-electron-irradiation conditions. From the electron energy dependence of the cross section for the initiation of the silicide formation, it is clarified that the silicide formation under electron irradiation was not due to a knock-on atom-displacement process, but a process induced by electronic excitation. It is suggested that a mechanism related to the Knotek and Feibelman mechanism may play an important role in silicide formation within the solid. Similar silicide formation was also observed at the palladium/silicon oxide and nickel/silicon oxide interfaces, indicating a wide generality of the silicide formation by electronic excitation.

  4. Crack healing behavior of hot pressed silicon nitride due to oxidation

    NASA Technical Reports Server (NTRS)

    Choi, S. R.; Tikare, V.

    1992-01-01

    It is shown that limited oxidation of an MgO-containing, hot-pressed silicon nitride ceramic at 800 deg C and above results in increased strength due to crack healing. Slight oxidation of the surface produces enstatite and cristobalite which fills in cracks. More extensive oxidation leads to strength degradation due to the formation of new flaws by the evolution of N2 gas at the surface. The apparent fracture toughness also increased at 800 deg C and above due to oxidation. Bonds formed between the two surfaces of the crack during oxidation leads to a reduction in stress intensity at the crack tip, suggesting that valid high-temperature toughness values cannot be obtained in an air environment. The increase in strength due to crack healing by oxidation can be achieved without compromising the fatigue properties of the silicon nitride ceramic.

  5. Corrosion resistant three-dimensional nanotextured silicon for water photo-oxidation

    NASA Astrophysics Data System (ADS)

    Carter, Rachel; Chatterjee, Shahana; Gordon, Evan; Share, Keith; Erwin, William R.; Cohn, Adam P.; Bardhan, Rizia; Pint, Cary L.

    2015-10-01

    We demonstrate the ability to chemically transform bulk silicon into a nanotextured surface that exhibits excellent electrochemical stability in aqueous conditions for water photo-oxidation. Conformal defective graphene coatings on nanotextured silicon formed by thermal treatment enable over 50× corrosion resistance in aqueous electrolytes based upon Tafel analysis and impedance spectroscopy. This enables nanotextured silicon as an effective oxygen-evolution photoanode for water splitting with saturation current density measured near 35 mA cm-2 under 100 mW cm-2 (1 sun) illumination. Our approach builds upon simple and scalable processing techniques with silicon to develop corrosion resistant electrodes that can benefit a broad range of catalytic and photocatalytic applications.We demonstrate the ability to chemically transform bulk silicon into a nanotextured surface that exhibits excellent electrochemical stability in aqueous conditions for water photo-oxidation. Conformal defective graphene coatings on nanotextured silicon formed by thermal treatment enable over 50× corrosion resistance in aqueous electrolytes based upon Tafel analysis and impedance spectroscopy. This enables nanotextured silicon as an effective oxygen-evolution photoanode for water splitting with saturation current density measured near 35 mA cm-2 under 100 mW cm-2 (1 sun) illumination. Our approach builds upon simple and scalable processing techniques with silicon to develop corrosion resistant electrodes that can benefit a broad range of catalytic and photocatalytic applications. Electronic supplementary information (ESI) available: (i) Experimental details, (ii) Nyquist plot from EIS data, (iii) FTIR of H-terminated silicon, (iv) reflectance measurements to quantify light trapping in nanotextured silicon, (v) LSV from Tafel analysis, and (vi) J-V curves for H-terminated flat samples, (vii) stability test of photoanode, and (viii) forward and reverse scans for each sample type. See DOI: 10

  6. Gadolinium Oxide / Silicon Thin Film Heterojunction Solid-State Neutron Detector

    DTIC Science & Technology

    2010-03-01

    gadolinium oxide (Gd2O3) and p-type silicon heterojunction diodes were produced using a supercritical water deposition process . Pulse height spectroscopy...possible to produce semi-conductor devices that have a high probability of neutron interaction. 1.2 Problem Statement Can a heterojunction diode...materials. The second area develops a method of depositing Gd on silicon with subsequent device fabrication. The third is a feasibility study that

  7. Optimization of contaminated oxide inversion layer solar cell. [considering silicon oxide coating

    NASA Technical Reports Server (NTRS)

    Call, R. L.

    1976-01-01

    Contaminated oxide cells have been fabricated with efficiencies of 8.6% with values of I sub sc = 120 ma, V sub oc = .54 volts, and curve factor of .73. Attempts to optimize the fabrication step to yield a higher output have not been successful. The fundamental limitation is the inadequate antireflection coating afforded by the silicon dioxide coating used to hold the contaminating ions. Coatings of SiO, therefore, were used to obtain a good antireflection coating, but the thinness of the coatings prevented a large concentration of the contaminating ions, and the cells was weak. Data of the best cell were .52 volts V sub oc, 110 ma I sub sc, .66 CFF and 6.7% efficiency.

  8. The effect of nanocrystalline silicon host on magnetic properties of encapsulated iron oxide nanoparticles.

    PubMed

    Granitzer, P; Rumpf, K; Gonzalez-Rodriguez, R; Coffer, J L; Reissner, M

    2015-12-21

    The purpose of this work is a detailed comparison of the fundamental magnetic properties of nanocomposite systems consisting of Fe3O4 nanoparticle-loaded porous silicon as well as silicon nanotubes. Such composite structures are of potential merit in the area of magnetically guided drug delivery. For magnetic systems to be utilized in biomedical applications, there are certain magnetic properties that must be fulfilled. Therefore magnetic properties of embedded Fe3O4-nanoparticles in these nanostructured silicon host matrices, porous silicon and silicon nanotubes, are investigated. Temperature-dependent magnetic investigations have been carried out for four types of iron oxide particle sizes (4, 5, 8 and 10 nm). The silicon host, in interplay with the iron oxide nanoparticle size, plays a sensitive role. It is shown that Fe3O4 loaded porous silicon and SiNTs differ significantly in their magnetic behavior, especially the transition between superparamagnetic behavior and blocked state, due to host morphology-dependent magnetic interactions. Importantly, it is found that all investigated samples meet the magnetic precondition of possible biomedical applications of exhibiting a negligible magnetic remanence at room temperature.

  9. Titanium-silicon oxide film structures for polarization-modulated infrared reflection absorption spectroscopy

    PubMed Central

    Dunlop, Iain E.; Zorn, Stefan; Richter, Gunther; Srot, Vesna; Kelsch, Marion; van Aken, Peter A.; Skoda, Maximilian; Gerlach, Alexander; Spatz, Joachim P.; Schreiber, Frank

    2010-01-01

    We present a titanium-silicon oxide film structure that permits polarization modulated infrared reflection absorption spectroscopy on silicon oxide surfaces. The structure consists of a ~6 nm sputtered silicon oxide film on a ~200 nm sputtered titanium film. Characterization using conventional and scanning transmission electron microscopy, electron energy loss spectroscopy, X-ray photoelectron spectroscopy and X-ray reflectometry is presented. We demonstrate the use of this structure to investigate a selectively protein-resistant self-assembled monolayer (SAM) consisting of silane-anchored, biotin-terminated poly(ethylene glycol) (PEG). PEG-associated IR bands were observed. Measurements of protein-characteristic band intensities showed that this SAM adsorbed streptavidin whereas it repelled bovine serum albumin, as had been expected from its structure. PMID:20418963

  10. Designing high performance precursors for atomic layer deposition of silicon oxide

    SciTech Connect

    Mallikarjunan, Anupama Chandra, Haripin; Xiao, Manchao; Lei, Xinjian; Pearlstein, Ronald M.; Bowen, Heather R.; O'Neill, Mark L.; Derecskei-Kovacs, Agnes; Han, Bing

    2015-01-15

    Conformal and continuous silicon oxide films produced by atomic layer deposition (ALD) are enabling novel processing schemes and integrated device structures. The increasing drive toward lower temperature processing requires new precursors with even higher reactivity. The aminosilane family of precursors has advantages due to their reactive nature and relative ease of use. In this paper, the authors present the experimental results that reveal the uniqueness of the monoaminosilane structure [(R{sub 2}N)SiH{sub 3}] in providing ultralow temperature silicon oxide depositions. Disubstituted aminosilanes with primary amines such as in bis(t-butylamino)silane and with secondary amines such as in bis(diethylamino)silane were compared with a representative monoaminosilane: di-sec-butylaminosilane (DSBAS). DSBAS showed the highest growth per cycle in both thermal and plasma enhanced ALD. These findings show the importance of the arrangement of the precursor's organic groups in an ALD silicon oxide process.

  11. Microstructural and physical properties of magnesium oxide-doped silicon nitride ceramics

    NASA Astrophysics Data System (ADS)

    Sirota, V.; Lukianova, O.; Krasilnikov, V.; Selemenev, V.; Dokalov, V.

    Silicon nitride based ceramics with aluminum, yttrium and magnesium oxides were produced by cold isostatic pressing and free sintering. The phase composition of the starting MgO powder obtained by the novel technology has been studied. The effect of magnesium oxide content on the structure of the produced materials has been investigated. It was found, that obtained materials with 1 and 2 wt.% of magnesium oxide and without it have a typical β-silicon nitride structure with elongated grains. Ceramics with 5 wt.% magnesia has a duplex α/β-structure with elongated and equiaxed grains. Ceramics with 2 wt.% magnesium oxide has a maximum density of 2.91 g/cm3. The increases in magnesium oxide content upto 5% led to decrease in the shrinkage (from 16% to 12%) and density (from 2.88 to 2.37 g/cm3).

  12. Resistance of Silicon Nitride Turbine Components to Erosion and Hot Corrosion/oxidation Attack

    NASA Technical Reports Server (NTRS)

    Strangmen, Thomas E.; Fox, Dennis S.

    1994-01-01

    Silicon nitride turbine components are under intensive development by AlliedSignal to enable a new generation of higher power density auxiliary power systems. In order to be viable in the intended applications, silicon nitride turbine airfoils must be designed for survival in aggressive oxidizing combustion gas environments. Erosive and corrosive damage to ceramic airfoils from ingested sand and sea salt must be avoided. Recent engine test experience demonstrated that NT154 silicon nitride turbine vanes have exceptional resistance to sand erosion, relative to superalloys used in production engines. Similarly, NT154 silicon nitride has excellent resistance to oxidation in the temperature range of interest - up to 1400 C. Hot corrosion attack of superalloy gas turbine components is well documented. While hot corrosion from ingested sea salt will attack silicon nitride substantially less than the superalloys being replaced in initial engine applications, this degradation has the potential to limit component lives in advanced engine applications. Hot corrosion adversely affects the strength of silicon nitride in the 850 to 1300 C range. Since unacceptable reductions in strength must be rapidly identified and avoided, AlliedSignal and the NASA Lewis Research Center have pioneered the development of an environmental life prediction model for silicon nitride turbine components. Strength retention in flexure specimens following 1 to 3300 hour exposures to high temperature oxidation and hot corrosion has been measured and used to calibrate the life prediction model. Predicted component life is dependent upon engine design (stress, temperature, pressure, fuel/air ratio, gas velocity, and inlet air filtration), mission usage (fuel sulfur content, location (salt in air), and times at duty cycle power points), and material parameters. Preliminary analyses indicate that the hot corrosion resistance of NT154 silicon nitride is adequate for AlliedSignal's initial engine

  13. High-Quality Solution-Processed Silicon Oxide Gate Dielectric Applied on Indium Oxide Based Thin-Film Transistors.

    PubMed

    Jaehnike, Felix; Pham, Duy Vu; Anselmann, Ralf; Bock, Claudia; Kunze, Ulrich

    2015-07-01

    A silicon oxide gate dielectric was synthesized by a facile sol-gel reaction and applied to solution-processed indium oxide based thin-film transistors (TFTs). The SiOx sol-gel was spin-coated on highly doped silicon substrates and converted to a dense dielectric film with a smooth surface at a maximum processing temperature of T = 350 °C. The synthesis was systematically improved, so that the solution-processed silicon oxide finally achieved comparable break downfield strength (7 MV/cm) and leakage current densities (<10 nA/cm(2) at 1 MV/cm) to thermally grown silicon dioxide (SiO2). The good quality of the dielectric layer was successfully proven in bottom-gate, bottom-contact metal oxide TFTs and compared to reference TFTs with thermally grown SiO2. Both transistor types have field-effect mobility values as high as 28 cm(2)/(Vs) with an on/off current ratio of 10(8), subthreshold swings of 0.30 and 0.37 V/dec, respectively, and a threshold voltage close to zero. The good device performance could be attributed to the smooth dielectric/semiconductor interface and low interface trap density. Thus, the sol-gel-derived SiO2 is a promising candidate for a high-quality dielectric layer on many substrates and high-performance large-area applications.

  14. Plasma-Sprayed Refractory Oxide Coatings on Silicon-Base Ceramics

    NASA Technical Reports Server (NTRS)

    Tewari, Surendra

    1997-01-01

    Silicon-base ceramics are promising candidate materials for high temperature structural applications such as heat exchangers, gas turbines and advanced internal combustion engines. Composites based on these materials are leading candidates for combustor materials for HSCT gas turbine engines. These materials possess a combination of excellent physical and mechanical properties at high temperatures, for example, high strength, high toughness, high thermal shock resistance, high thermal conductivity, light weight and excellent oxidation resistance. However, environmental durability can be significantly reduced in certain conditions such as when molten salts, H2 or water vapor are present. The oxidation resistance of silicon-base materials is provided by SiO2 protective layer. Molten salt reacts with SiO2 and forms a mixture of SiO2 and liquid silicate at temperatures above 800C. Oxygen diffuses more easily through the chemically altered layer, resulting in a catastrophic degradation of the substrate. SiC and Si3N4 are not stable in pure H2 and decompose to silicon and gaseous species such as CH4, SiH, SiH4, N2, and NH3. Water vapor is known to slightly increase the oxidation rate of SiC and Si3N4. Refractory oxides such as alumina, yttria-stabilized zirconia, yttria and mullite (3Al2O3.2SiO2) possess excellent environmental durability in harsh conditions mentioned above. Therefore, refractory oxide coatings on silicon-base ceramics can substantially improve the environmental durability of these materials by acting as a chemical reaction barrier. These oxide coatings can also serve as a thermal barrier. The purpose of this research program has been to develop refractory oxide chemical/thermal barrier coatings on silicon-base ceramics to provide extended temperature range and lifetime to these materials in harsh environments.

  15. Role of an Oxidant Mixture as Surface Modifier of Porous Silicon Microstructures Evaluated by Spectroscopic Ellipsometry

    NASA Astrophysics Data System (ADS)

    Montiel-González, Zeuz; Escobar, Salvador; Nava, Rocío; Del Río, J. Antonio; Tagüeña-Martínez, Julia

    2016-04-01

    Current research on porous silicon includes the construction of complex structures with luminescent and/or photonic properties. However, their preparation with both characteristics is still challenging. Recently, our group reported a possible method to achieve that by adding an oxidant mixture to the electrolyte used to produce porous silicon. This mixture can chemically modify their microstructure by changing the thickness and surface passivation of the pore walls. In this work, we prepared a series of samples (with and without oxidant mixture) and we evaluated the structural differences through their scanning electron micrographs and their optical properties determined by spectroscopic ellipsometry. The results showed that ellipsometry is sensitive to slight variations in the porous silicon structure, caused by changes in their preparation. The fitting process, based on models constructed from the features observed in the micrographs, allowed us to see that the mayor effect of the oxidant mixture is on samples of high porosity, where the surface oxidation strongly contributes to the skeleton thinning during the electrochemical etching. This suggests the existence of a porosity threshold for the action of the oxidant mixture. These results could have a significant impact on the design of complex porous silicon structures for different optoelectronic applications.

  16. Role of an Oxidant Mixture as Surface Modifier of Porous Silicon Microstructures Evaluated by Spectroscopic Ellipsometry

    PubMed Central

    Montiel-González, Zeuz; Escobar, Salvador; Nava, Rocío; del Río, J. Antonio; Tagüeña-Martínez, Julia

    2016-01-01

    Current research on porous silicon includes the construction of complex structures with luminescent and/or photonic properties. However, their preparation with both characteristics is still challenging. Recently, our group reported a possible method to achieve that by adding an oxidant mixture to the electrolyte used to produce porous silicon. This mixture can chemically modify their microstructure by changing the thickness and surface passivation of the pore walls. In this work, we prepared a series of samples (with and without oxidant mixture) and we evaluated the structural differences through their scanning electron micrographs and their optical properties determined by spectroscopic ellipsometry. The results showed that ellipsometry is sensitive to slight variations in the porous silicon structure, caused by changes in their preparation. The fitting process, based on models constructed from the features observed in the micrographs, allowed us to see that the mayor effect of the oxidant mixture is on samples of high porosity, where the surface oxidation strongly contributes to the skeleton thinning during the electrochemical etching. This suggests the existence of a porosity threshold for the action of the oxidant mixture. These results could have a significant impact on the design of complex porous silicon structures for different optoelectronic applications. PMID:27097767

  17. Role of an Oxidant Mixture as Surface Modifier of Porous Silicon Microstructures Evaluated by Spectroscopic Ellipsometry.

    PubMed

    Montiel-González, Zeuz; Escobar, Salvador; Nava, Rocío; del Río, J Antonio; Tagüeña-Martínez, Julia

    2016-04-21

    Current research on porous silicon includes the construction of complex structures with luminescent and/or photonic properties. However, their preparation with both characteristics is still challenging. Recently, our group reported a possible method to achieve that by adding an oxidant mixture to the electrolyte used to produce porous silicon. This mixture can chemically modify their microstructure by changing the thickness and surface passivation of the pore walls. In this work, we prepared a series of samples (with and without oxidant mixture) and we evaluated the structural differences through their scanning electron micrographs and their optical properties determined by spectroscopic ellipsometry. The results showed that ellipsometry is sensitive to slight variations in the porous silicon structure, caused by changes in their preparation. The fitting process, based on models constructed from the features observed in the micrographs, allowed us to see that the mayor effect of the oxidant mixture is on samples of high porosity, where the surface oxidation strongly contributes to the skeleton thinning during the electrochemical etching. This suggests the existence of a porosity threshold for the action of the oxidant mixture. These results could have a significant impact on the design of complex porous silicon structures for different optoelectronic applications.

  18. Doped and Undoped Zinc Oxide Nanostructures on Silicon Wafers

    NASA Astrophysics Data System (ADS)

    Chubenko, E.; Bondarenko, V.

    2013-05-01

    We present results of hydrothermal deposition of undoped and Al doped ZnO nanocrystals on nanocrystalline silicon. ZnO nanocrystals were deposited in an equimolar zinc nitride and hexamethylenetetramine solution. Aluminum nitride was used as Al precursor. The difference of the morphology of doped and undoped ZnO nanocrystals is discussed. Photoluminescence properties of the obtained nanocrystals are shown.

  19. Low-index nanopatterned barrier for hybrid oxide-free III-V silicon conductive bonding.

    PubMed

    Bougot-Robin, Kristelle; Talneau, Anne; Benisty, Henri

    2014-09-22

    Oxide-free bonding of a III-V active stack emitting at 1300-1600 nm to a silicon-on-insulator wafer offers the capability to electrically inject lasers from the silicon side. However, a typical 500-nm-thick silicon layer notably attracts the fundamental guided mode of the silicon + III-V stack, a detrimental feature compared to established III-V Separate-Confinement Heterostructure (SCH) stacks. We experimentally probe with photoluminescence as an internal light source the guiding behavior for oxide-free bonding to a nanopatterned silicon wafer that acts as a low-index barrier. We use a sub-wavelength square array of small holes as an effective "low-index silicon" medium. It is weakly modulated along one dimension (superperiodic array) to outcouple the resulting guided modes to free space, where we use an angle-resolved spectroscopy study. Analysis of experimental branches confirms the capability to operate with a fundamental mode well localized in the III-V heterostructures.

  20. Analyses of silicon dioxide, magnesium oxide, lead fluoride, bismuth as low-pass velocity filters for neutrons

    NASA Technical Reports Server (NTRS)

    Connor, D.; Holmryd, S.

    1969-01-01

    Transmission measurement of neutrons by filter materials for low energy neutrons is important for the study of structure and dynamics of condensed matter. Since only thermal neutrons are useful for such experiments, filter materials that transmit thermal neutrons while attenuating fast neutrons and gamma rays are of considerable interest.

  1. Mid-infrared optical properties of thin films of aluminum oxide, titanium dioxide, silicon dioxide, aluminum nitride, and silicon nitride.

    PubMed

    Kischkat, Jan; Peters, Sven; Gruska, Bernd; Semtsiv, Mykhaylo; Chashnikova, Mikaela; Klinkmüller, Matthias; Fedosenko, Oliana; Machulik, Stephan; Aleksandrova, Anna; Monastyrskyi, Gregorii; Flores, Yuri; Masselink, W Ted

    2012-10-01

    The complex refractive index components, n and k, have been studied for thin films of several common dielectric materials with a low to medium refractive index as functions of wavelength and stoichiometry for mid-infrared (MIR) wavelengths within the range 1.54-14.29 μm (700-6500 cm(-1)). The materials silicon oxide, silicon nitride, aluminum oxide, aluminum nitride, and titanium oxide are prepared using room temperature reactive sputter deposition and are characterized using MIR variable angle spectroscopic ellipsometry. The investigation shows how sensitive the refractive index functions are to the O2 and N2 flow rates, and for which growth conditions the materials deposit homogeneously. It also allows conclusions to be drawn on the degree of amorphousness and roughness. To facilitate comparison of the materials deposited in this work with others, the index of refraction was also determined and provided for the near-IR and visible ranges of the spectrum. The results presented here should serve as a useful information base for designing optical coatings for the MIR part of the electromagnetic spectrum. The results are parameterized to allow them to be easily used for coating design.

  2. Brightly photoluminescent phosphor materials based on silicon quantum dots with oxide shell passivation.

    PubMed

    Tu, Chang-Ching; Zhang, Qifeng; Lin, Lih Y; Cao, Guozhong

    2012-01-02

    We demonstrate silicon-based phosphor materials which exhibit bright photoluminescence from near-infra-red to green. The colloidal composites which are composed of silicon quantum dots (SiQDs) attached on micro-size silicon particles are synthesized by electrochemical etching of silicon wafers and then dispersed in ethanol. Subsequently, isotropic etching by HF/HNO3 mixture controls the size so as the emission wavelength of SiQDs, and forms an oxide passivating shell. The phosphors can further react with alkoxysilanes to form a stable suspension in non-polar solvents for solution-processing. The resulting red-light-emitting SiQD-based phosphors in chloroform exhibit photoluminescence external quantum efficiency of 15.9%. Their thin films can be efficiently excited by InGaN light-emitting diodes and are stable in room condition.

  3. Configurational statistical model for the damaged structure of silicon oxide after ion implantation

    NASA Astrophysics Data System (ADS)

    Garrido, B.; Samitier, J.; Morante, J. R.; Montserrat, J.; Domínguez, C.

    1994-06-01

    A configurational model for silicon oxide damaged after a high-dose ion implantation of a nonreactive species is presented. Based on statistics of silicon-centered tetrahedra, the model takes into account not only the closest environment of a given silicon atom, but also the second neighborhood, so it is specified whether the oxygen attached to one given silicon is bridging two tetrahedra or not. The frequencies and intensities of infrared vibrational bands have been calculated by averaging over the distributions and these results are in agreement with the ones obtained from infrared experimental spectra. Likewise, the chemical shifts obtained from x-ray photoelectron spectroscopy (XPS) analysis are similar to the reported values for the charge-transfer model of SiOx compounds.

  4. Optical properties of bismuth-doped silica fibres in the temperature range 300 - 1500 K

    SciTech Connect

    Dvoretskii, D A; Bufetov, Igor' A; Vel'miskin, V V; Zlenko, Alexander S; Khopin, V F; Semjonov, S L; Guryanov, Aleksei N; Denisov, L K; Dianov, Evgenii M

    2012-09-30

    The visible and near-IR absorption and luminescence bands of bismuth-doped silica and germanosilicate fibres have been measured for the first time as a function of temperature. The temperature-dependent IR luminescence lifetime of a bismuth-related active centre associated with silicon in the germanosilicate fibre has been determined. The Bi{sup 3+} profile across the silica fibre preform is shown to differ markedly from the distribution of IR-emitting bismuth centres associated with silicon. The present results strongly suggest that the IR-emitting bismuth centre comprises a lowvalence bismuth ion and an oxygen-deficient glass network defect. (optical fibres, lasers and amplifiers. properties and applications)

  5. Oxidation of Chemically-Vapor-Deposited Silicon Carbide in Carbon Dioxide

    NASA Technical Reports Server (NTRS)

    Opila, Elizabeth J.; Nguyen, QuynhGiao N.

    1998-01-01

    Chemically-vapor-deposited silicon carbide (CVD SiC) was oxidized in carbon dioxide (CO2) at temperatures of 1200-1400 C for times between 96 and 500 h at several gas flow rates. Oxidation weight gains were monitored by thermogravimetric analysis (TGA) and were found to be very small and independent of temperature. Possible rate limiting kinetic mechanisms are discussed. Passive oxidation of SiC by CO2 is negligible compared to the rates measured for other oxidants that are also found in combustion environments, oxygen and water vapor.

  6. Synthesis of silicon oxide nanowires and nanotubes with cobalt-palladium or palladium catalysts

    NASA Astrophysics Data System (ADS)

    Esterina, Ria; Liu, X. M.; Ross, C. A.; Adeyeye, A. O.; Choi, W. K.

    2012-07-01

    The dewetting behaviors of cobalt (Co), cobalt palladium (CoPd), and palladium (Pd) thin films on oxidized silicon substrates were examined. We observed the formation of craters in the oxide layer and pits in the Si substrate for larger CoPd or Pd catalyst particles and thinner oxide. Nanowires and nanotubes were observed near the Si pits. The nanowires and nanotubes grow via a vapor-solid-solid or vapor-liquid-solid mechanism with the silicon vapor source provided from the substrate. The original Si atoms that form the nanowires or nanotubes were oxidized in situ by the residual oxygen atoms present in the chamber. Some of the nanotubes had a series of embedded sub-catalysts that formed branches from the primary nanotube.

  7. Heterojunction Solar Cells Based on Silicon and Composite Films of Graphene Oxide and Carbon Nanotubes.

    PubMed

    Yu, LePing; Tune, Daniel; Shearer, Cameron; Shapter, Joseph

    2015-09-07

    Graphene oxide (GO) sheets have been used as the surfactant to disperse single-walled carbon nanotubes (CNT) in water to prepare GO/CNT electrodes that are applied to silicon to form a heterojunction that can be used in solar cells. GO/CNT films with different ratios of the two components and with various thicknesses have been used as semitransparent electrodes, and the influence of both factors on the performance of the solar cell has been studied. The degradation rate of the GO/CNT-silicon devices under ambient conditions has also been explored. The influence of the film thickness on the device performance is related to the interplay of two competing factors, namely, sheet resistance and transmittance. CNTs help to improve the conductivity of the GO/CNT film, and GO is able to protect the silicon from oxidation in the atmosphere.

  8. Estimating the extent of surface oxidation by measuring the porosity dependent dielectrics of oxygenated porous silicon [rapid communication

    NASA Astrophysics Data System (ADS)

    Pan, L. K.; Sun, Chang Q.; Li, C. M.

    2005-02-01

    Surface oxidation and porosity variation play significant roles in the dielectric performance of porous silicon (PS) yet discriminating the contribution of these events is a challenge. Here we present an analytical solution that covers contributions from the components of silicon oxide surface, silicon backbone and voids using a serial-parallel capacitance structure. Agreement between modeling predictions and measurement has been realized, which turns out an effective method that enables us to estimate the extent of surface oxidation of a specimen by measuring the porosity dependent dielectric response of the chemically passivated PS, and provides guidelines that could be useful for designing dielectric porous structures with surface oxidation.

  9. Facile preparation of highly-dispersed cobalt-silicon mixed oxide nanosphere and its catalytic application in cyclohexane selective oxidation

    PubMed Central

    2011-01-01

    Highly dispersed cobalt-silicon mixed oxide [Co-SiO2] nanosphere was successfully prepared with a modified reverse-phase microemulsion method. This material was characterized in detail by X-ray diffraction, transmission electron microscopy, Fourier transform infrared, ultraviolet-visible diffuse reflectance spectra, X-ray absorption spectroscopy near-edge structure, and N2 adsorption-desorption measurements. High valence state cobalt could be easily obtained without calcination, which is fascinating for the catalytic application for its strong oxidation ability. In the selective oxidation of cyclohexane, Co-SiO2 acted as an efficient catalyst, and good activity could be obtained under mild conditions. PMID:22067075

  10. An Kinetics Study of the Electron Cyclotron Resonance Plasma Oxidation of Silicon

    DTIC Science & Technology

    1991-11-01

    for the bare silicon and thin oxides are in a region where the accuracy of the rotating analyzer ellipsometer is good. Second, the dependance of...constant. In order to compare our experimental results to this model, the dependance of the growth rate with the temperature and the bias is examined...show the dependance of temperature and bias are close to the Mott-Cabrera theory for the oxidation by the charged species in the limit of the low

  11. High Temperature Oxidation and Mechanical properties of Silicon Nitride.

    DTIC Science & Technology

    1980-11-30

    Rowcliffe, and R. H. Lamoreaux Prepared for: Air Force Office of Scientific Research/NE Building 410 Boiling Air Force Base, D.C. 20332 Attention: Captain...samples were examined by x-ray dif- fraction. Cristobalite and a-Si 3N4 lines were found, but there was no evidence of silicon oxynitride. In most... cristobalite is the stable form.𔃾 A large amount of evi- dence indicates that this phase transiticn was not the primary reason for the increased

  12. Scalable Preparation of Ternary Hierarchical Silicon Oxide-Nickel-Graphite Composites for Lithium-Ion Batteries.

    PubMed

    Wang, Jing; Bao, Wurigumula; Ma, Lu; Tan, Guoqiang; Su, Yuefeng; Chen, Shi; Wu, Feng; Lu, Jun; Amine, Khalil

    2015-12-07

    Silicon monoxide is a promising anode candidate because of its high theoretical capacity and good cycle performance. To solve the problems associated with this material, including large volume changes during charge-discharge processes, we report a ternary hierarchical silicon oxide-nickel-graphite composite prepared by a facile two-step ball-milling method. The composite consists of nano-Si dispersed silicon oxides embedded in nano-Ni/graphite matrices (Si@SiOx /Ni/graphite). In the composite, crystalline nano-Si particles are generated by the mechanochemical reduction of SiO by ball milling with Ni. These nano-Si dispersed oxides have abundant electrochemical activity and can provide high Li-ion storage capacity. Furthermore, the milled nano-Ni/graphite matrices stick well to active materials and interconnect to form a crosslinked framework, which functions as an electrical highway and a mechanical backbone so that all silicon oxide particles become electrochemically active. Owing to these advanced structural and electrochemical characteristics, the composite enhances the utilization efficiency of SiO, accommodates its large volume expansion upon cycling, and has good ionic and electronic conductivity. The composite electrodes thus exhibit substantial improvements in electrochemical performance. This ternary hierarchical Si@SiOx /Ni/graphite composite is a promising candidate anode material for high-energy lithium-ion batteries. Additionally, the mechanochemical ball-milling method is low cost and easy to reproduce, indicating potential for the commercial production of the composite materials.

  13. Local etching of silicon using a solid mask from porous aluminum oxide

    SciTech Connect

    Belov, A. N.

    2008-12-15

    Technological features of nanoprofiling of silicon protected by a solid mask made of porous aluminum oxide are considered. It is shown that the method based on bombarding structures with accelerated neutral atoms (in particular, argon atoms) is efficient for etching through this mask.

  14. Improved reaction sintered silicon nitride. [protective coatings to improve oxidation resistance

    NASA Technical Reports Server (NTRS)

    Baumgartner, H. R.

    1978-01-01

    Processing treatments were applied to as-nitrided reaction sintered silicon nitride (RSSN) with the purposes of improving strength after processing to above 350 MN/m2 and improving strength after oxidation exposure. The experimental approaches are divided into three broad classifications: sintering of surface-applied powders; impregnation of solution followed by further thermal processing; and infiltration of molten silicon and subsequent carburization or nitridation of the silicon. The impregnation of RSSN with solutions of aluminum nitrate and zirconyl chloride, followed by heating at 1400-1500 C in a nitrogen atmosphere containing silicon monoxide, improved RSSN strength and oxidation resistance. The room temperature bend strength of RSSN was increased nearly fifty percent above the untreated strength with mean absolute strengths up to 420 MN/m2. Strengths of treated samples that were measured after a 12 hour oxidation exposure in air were up to 90 percent of the original as-nitrided strength, as compared to retained strengths in the range of 35 to 60 percent for untreated RSSN after the same oxidation exposure.

  15. Metal Oxide Silicon /MOS/ transistors protected from destructive damage by wire

    NASA Technical Reports Server (NTRS)

    Deboo, G. J.; Devine, E. J.

    1966-01-01

    Loop of flexible, small diameter, nickel wire protects metal oxide silicon /MOS/ transistors from a damaging electrostatic potential. The wire is attached to a music-wire spring, slipped over the MOS transistor case, and released so the spring tensions the wire loop around all the transistor leads, shorting them together. This allows handling without danger of damage.

  16. The evolution of the fraction of Er ions sensitized by Si nanostructures in silicon-rich silicon oxide thin films.

    PubMed

    Noé, P; Okuno, H; Jager, J-B; Delamadeleine, E; Demichel, O; Rouvière, J-L; Calvo, V; Maurizio, C; D'Acapito, F

    2009-09-02

    Photoluminescence (PL) and time-resolved PL experiments as a function of the elaboration process are performed on Er-doped silicon-rich silicon oxide (SRO:Er) thin films grown under NH(3) atmosphere. These PL measurements of the Er(3+) emission at 1.54 microm under non-resonant pumping with the Er f-f transitions are obtained for different Er(3+) concentrations, ranging from 0.05 to 1.4 at.%, and various post-growth annealing temperatures of the layers. High resolution transmission electron microscopy (HRTEM) and energy-filtered TEM (EFTEM) analysis show a high density of Si nanostructures composed of amorphous and crystalline nanoclusters varying from 2.7 x 10(18) to 10(18) cm(-3) as a function of the post-growth annealing temperature. Measurements of PL lifetime and effective Er excitation cross section for all the samples under non-resonant optical excitation with the Er(3+) atomic energy levels show that the number of Er(3+) ions sensitized by the silicon-rich matrix decreases as the annealing temperature is increased from 500 to 1050 degrees C. The origin of this effect is attributed to the reduction of the density of sensitizers for Er ions in the SRO matrix when the annealing temperature increases. Finally, extended x-ray absorption fine-structure spectroscopy (EXAFS) shows a strong correlation between the number of emitters and the mean local order around the erbium ions.

  17. A Model for the Oxidation of Carbon Silicon Carbide Composite Structures

    NASA Technical Reports Server (NTRS)

    Sullivan, Roy M.

    2004-01-01

    A mathematical theory and an accompanying numerical scheme have been developed for predicting the oxidation behavior of carbon silicon carbide (C/SiC) composite structures. The theory is derived from the mechanics of the flow of ideal gases through a porous solid. The result of the theoretical formulation is a set of two coupled nonlinear differential equations written in terms of the oxidant and oxide partial pressures. The differential equations are solved simultaneously to obtain the partial vapor pressures of the oxidant and oxides as a function of the spatial location and time. The local rate of carbon oxidation is determined using the map of the local oxidant partial vapor pressure along with the Arrhenius rate equation. The nonlinear differential equations are cast into matrix equations by applying the Bubnov-Galerkin weighted residual method, allowing for the solution of the differential equations numerically. The numerical method is demonstrated by utilizing the method to model the carbon oxidation and weight loss behavior of C/SiC specimens during thermogravimetric experiments. The numerical method is used to study the physics of carbon oxidation in carbon silicon carbide composites.

  18. Influence of interlayer trapping and detrapping mechanisms on the electrical characterization of hafnium oxide/silicon nitride stacks on silicon

    SciTech Connect

    Garcia, H.; Duenas, S.; Castan, H.; Gomez, A.; Bailon, L.; Toledano-Luque, M.; Prado, A. del; Martil, I.; Gonzalez-Diaz, G.

    2008-11-01

    Al/HfO{sub 2}/SiN{sub x}:H/n-Si metal-insulator-semiconductor capacitors have been studied by electrical characterization. Films of silicon nitride were directly grown on n-type silicon substrates by electron cyclotron resonance assisted chemical vapor deposition. Silicon nitride thickness was varied from 3 to 6.6 nm. Afterwards, 12 nm thick hafnium oxide films were deposited by the high-pressure sputtering approach. Interface quality was determined by using current-voltage, capacitance-voltage, deep-level transient spectroscopy (DLTS), conductance transients, and flatband voltage transient techniques. Leakage currents followed the Poole-Frenkel emission model in all cases. According to the simultaneous measurement of the high and low frequency capacitance voltage curves, the interface trap density obtained for all the samples is in the 10{sup 11} cm{sup -2} eV{sup -1} range. However, a significant increase in this density of about two orders of magnitude was obtained by DLTS for the thinnest silicon nitride interfacial layers. In this work we probe that this increase is an artifact that must be attributed to traps existing at the HfO{sub 2}/SiN{sub x}:H intralayer interface. These traps are more easily charged or discharged as this interface comes near to the substrate, that is, as thinner the SiN{sub x}:H interface layer is. The trapping/detrapping mechanism increases the capacitance transient and, in consequence, the DLTS measurements have contributions not only from the insulator/substrate interface but also from the HfO{sub 2}/SiN{sub x}:H intralayer interface.

  19. Fabrication of disposable topographic silicon oxide from sawtoothed patterns: control of arrays of gold nanoparticles.

    PubMed

    Cho, Heesook; Yoo, Hana; Park, Soojin

    2010-05-18

    Disposable topographic silicon oxide patterns were fabricated from polymeric replicas of sawtoothed glass surfaces, spin-coating of poly(dimethylsiloxane) (PDMS) thin films, and thermal annealing at certain temperature and followed by oxygen plasma treatment of the thin PDMS layer. A simple imprinting process was used to fabricate the replicated PDMS and PS patterns from sawtoothed glass surfaces. Next, thin layers of PDMS films having different thicknesses were spin-coated onto the sawtoothed PS surfaces and annealed at 60 degrees C to be drawn the PDMS into the valley of the sawtoothed PS surfaces, followed by oxygen plasma treatment to fabricate topographic silicon oxide patterns. By control of the thickness of PDMS layers, silicon oxide patterns having various line widths were fabricated. The silicon oxide topographic patterns were used to direct the self-assembly of polystyrene-block-poly(2-vinylpyridine) (PS-b-P2VP) block copolymer thin films via solvent annealing process. A highly ordered PS-b-P2VP micellar structure was used to let gold precursor complex with P2VP chains, and followed by oxygen plasma treatment. When the PS-b-P2VP thin films containing gold salts were exposed to oxygen plasma environments, gold salts were reduced to pure gold nanoparticles without changing high degree of lateral order, while polymers were completely degraded. As the width of trough and crest in topographic patterns increases, the number of gold arrays and size of gold nanoparticles are tuned. In the final step, the silicon oxide topographic patterns were selectively removed by wet etching process without changing the arrays of gold nanoparticles.

  20. The effect of nanocrystalline silicon host on magnetic properties of encapsulated iron oxide nanoparticles

    NASA Astrophysics Data System (ADS)

    Granitzer, P.; Rumpf, K.; Gonzalez-Rodriguez, R.; Coffer, J. L.; Reissner, M.

    2015-11-01

    The purpose of this work is a detailed comparison of the fundamental magnetic properties of nanocomposite systems consisting of Fe3O4 nanoparticle-loaded porous silicon as well as silicon nanotubes. Such composite structures are of potential merit in the area of magnetically guided drug delivery. For magnetic systems to be utilized in biomedical applications, there are certain magnetic properties that must be fulfilled. Therefore magnetic properties of embedded Fe3O4-nanoparticles in these nanostructured silicon host matrices, porous silicon and silicon nanotubes, are investigated. Temperature-dependent magnetic investigations have been carried out for four types of iron oxide particle sizes (4, 5, 8 and 10 nm). The silicon host, in interplay with the iron oxide nanoparticle size, plays a sensitive role. It is shown that Fe3O4 loaded porous silicon and SiNTs differ significantly in their magnetic behavior, especially the transition between superparamagnetic behavior and blocked state, due to host morphology-dependent magnetic interactions. Importantly, it is found that all investigated samples meet the magnetic precondition of possible biomedical applications of exhibiting a negligible magnetic remanence at room temperature.The purpose of this work is a detailed comparison of the fundamental magnetic properties of nanocomposite systems consisting of Fe3O4 nanoparticle-loaded porous silicon as well as silicon nanotubes. Such composite structures are of potential merit in the area of magnetically guided drug delivery. For magnetic systems to be utilized in biomedical applications, there are certain magnetic properties that must be fulfilled. Therefore magnetic properties of embedded Fe3O4-nanoparticles in these nanostructured silicon host matrices, porous silicon and silicon nanotubes, are investigated. Temperature-dependent magnetic investigations have been carried out for four types of iron oxide particle sizes (4, 5, 8 and 10 nm). The silicon host, in interplay

  1. Structures of small bismuth cluster cations

    NASA Astrophysics Data System (ADS)

    Kelting, Rebecca; Baldes, Alexander; Schwarz, Ulrike; Rapps, Thomas; Schooss, Detlef; Weis, Patrick; Neiss, Christian; Weigend, Florian; Kappes, Manfred M.

    2012-04-01

    The structures of bismuth cluster cations in the range between 4 and 14 atoms have been assigned by a combination of gas phase ion mobility and trapped ion electron diffraction measurements together with density functional theory calculations. We find that above 8 atoms the clusters adopt prolate structures with coordination numbers between 3 and 4 and highly directional bonds. These open structures are more like those seen for clusters of semiconducting-in-bulk elements (such as silicon) rather than resembling the compact structures typical for clusters of metallic-in-bulk elements. An accurate description of bismuth clusters at the level of density functional theory, in particular of fragmentation pathways and dissociation energetics, requires taking spin-orbit coupling into account. For n = 11 we infer that low energy isomers can have fragmentation thresholds comparable to their structural interconversion barriers. This gives rise to experimental isomer distributions which are dependent on formation and annealing histories.

  2. Enhancement of oxidation resistance of NBD 200 silicon nitride ceramics by aluminum implantation

    NASA Astrophysics Data System (ADS)

    Mukundhan, Priya

    Silicon nitride (Si3N4) ceramics are leading candidates for high temperature structural applications. They have already demonstrated functional capabilities well beyond the limits of conventional metals and alloys in advanced diesel and turbine engines. However, the practical exploitation of these benefits is limited by their oxidation and associated degradation processes in chemically aggressive environments. Additives and impurities in Si3N4 segregate to the surface of Si3N 4 and accelerate its high temperature oxidation process. This study aims to investigate the oxidation behavior of Norton NBD 200 silicon nitride (hot isostatically pressed with ˜1 wt.% MgO) and its modification by aluminum surface alloying. NBD 200 samples tribochemically polished to a mirror finish (10 nm) were implanted with 5, 10, 20 and 30 at.% aluminum at multienergies and multi-doses to achieve a uniform implant depth distribution to 200 nm. Unimplanted and aluminum-implanted samples were oxidized at 800°--1100°C in 1 atm O2 for 0.5--10 hours. Oxidation kinetics was determined using profilometry in conjunction with etch patterning. The morphological, structural and chemical characteristics of the oxide were characterized by various analytical techniques such as scanning electron microscope and energy dispersive x-ray analysis, secondary ion mass spectrometry and x-ray photoelectron spectroscopy. Oxidation of NBD 200 follows parabolic kinetics in the temperature range investigated and the process is diffusion-controlled. The oxide layers are enriched with sodium and magnesium from the bulk of the Si3N 4. The much higher oxidation rate for NBD 200 silicon nitride than for other silicon nitride ceramics with a similar amount of MgO is attributed to the presence of sodium. The rate-controlling mechanism is the outward diffusion of Mg2+ from the grain boundaries to the oxide scale. Aluminum implantation alleviates the detrimental effects of Na+ and Mg2+; not only is the rate of oxidation

  3. A heterojunction photocatalyst composed of zinc rhodium oxide, single crystal-derived bismuth vanadium oxide, and silver for overall pure-water splitting under visible light up to 740 nm.

    PubMed

    Kobayashi, Ryoya; Takashima, Toshihiro; Tanigawa, Satoshi; Takeuchi, Shugo; Ohtani, Bunsho; Irie, Hiroshi

    2016-10-12

    We recently reported the synthesis of a solid-state heterojunction photocatalyst consisting of zinc rhodium oxide (ZnRh2O4) and bismuth vanadium oxide (Bi4V2O11), which functioned as hydrogen (H2) and oxygen (O2) evolution photocatalysts, respectively, connected with silver (Ag). Polycrystalline Bi4V2O11 (p-Bi4V2O11) powders were utilized to form ZnRh2O4/Ag/p-Bi4V2O11, which was able to photocatalyze overall pure-water splitting under red-light irradiation with a wavelength of 700 nm (R. Kobayashi et al., J. Mater. Chem. A, 2016, 4, 3061). In the present study, we replaced p-Bi4V2O11 with a powder obtained by pulverizing single crystals of Bi4V2O11 (s-Bi4V2O11) to form ZnRh2O4/Ag/s-Bi4V2O11, and demonstrated that this heterojunction photocatalyst had enhanced water-splitting activity. In addition, ZnRh2O4/Ag/s-Bi4V2O11 was able to utilize nearly the entire range of visible light up to a wavelength of 740 nm. These properties were attributable to the higher O2 evolution activity of s-Bi4V2O11.

  4. Coating of tips for electrochemical scanning tunneling microscopy by means of silicon, magnesium, and tungsten oxides.

    PubMed

    Salerno, Marco

    2010-09-01

    Different combinations of metal tips and oxide coatings have been tested for possible operation in electrochemical scanning tunneling microscopy. Silicon and magnesium oxides have been thermally evaporated onto gold and platinum-iridium tips, respectively. Two different thickness values have been explored for both materials, namely, 40 and 120 nm for silicon oxide and 20 and 60 nm for magnesium oxide. Alternatively, tungsten oxide has been grown on tungsten tips via electrochemical anodization. In the latter case, to seek optimal results we have varied the pH of the anodizing electrolyte between one and four. The oxide coated tips have been first inspected by means of scanning electron microscopy equipped with microanalysis to determine the morphological results of the coating. Second, the coated tips have been electrically characterized ex situ for stability in time by means of cyclic voltammetry in 1 M aqueous KCl supporting electrolyte, both bare and supplemented with K(3)[Fe(CN)(6)] complex at 10 mM concentration in milliQ water as an analyte. Only the tungsten oxide coated tungsten tips have shown stable electrical behavior in the electrolyte. For these tips, the uncoated metal area has been estimated from the electrical current levels, and they have been successfully tested by imaging a gold grating in situ, which provided stable results for several hours. The successful tungsten oxide coating obtained at pH=4 has been assigned to the WO(3) form.

  5. Synthesis, phase stability and oxide ion conductivity of Ce(IV)-Cd(II) double substituted bismuth vanadate

    NASA Astrophysics Data System (ADS)

    Beg, Saba; Haneef, Sadaf

    2015-11-01

    Bi4V2O11-δ has been doped with Ce and Cd to study double substitution. The system with various dopant concentrations (0.07 ≤ x ≤ 0.30) was prepared by the standard solid-state reaction method. The correlation between the polymorphism and oxide ion performance was well investigated as a function of temperature and composition with the help of thermal analysis, X-ray diffraction (XRD) and AC impedance spectroscopy. From XRD results it is seen that the high oxide ion conducting tetragonal γ-phase is stabilized for x = 0.17. For the compositions x ≤ 0.10, monoclinic α-phase is retained at room temperature with clear evidence for two successive phase transitions α ↔ β and β ↔ γ. For x = 0.13, β ↔ γ phase transition is seen. However, the existence of order-disorder, γ' ↔ γ transition was confirmed for x = 0.17. It is seen that the highest low-temperature ionic conductivity at 320 °C is 3.19 × 10-4 S cm-1 which was observed for x = 0.17.

  6. Bismuth as a modifier of Au Pd catalyst: Enhancing selectivity in alcohol oxidation by suppressing parallel reaction

    SciTech Connect

    Villa, Alberto; Wang, Di; Veith, Gabriel M; Prati, Laura

    2012-01-01

    Bi has been widely employed as a modifier for Pd and Pt based catalyst mainly in order to improve selectivity. We found that when Bi was added to the bimetallic system AuPd, the effect on activity in alcohol oxidation mainly depends on the amount of Bi regardless its position, being negligible when Bi was 0.1 wt% and detectably negative when the amount was increased to 3 wt%. However, the selectivity of the reactions notably varied only when Bi was deposited on the surface of metal nanoparticles suppressing parallel reaction in both benzyl alcohol and glycerol oxidation. After a careful characterization of all the catalysts and additional catalytic tests, we concluded that the Bi influence on the activity of the catalysts could be ascribed to electronic effect whereas the one on selectivity mainly to a geometric modification. Moreover, the Bi-modified AuPd/AC catalyst showed possible application in the production of tartronic acid, a useful intermediate, from glycerol.

  7. Modelling of silicon oxynitridation by nitrous oxide using the reaction rate approach

    SciTech Connect

    Dominique Krzeminski, Christophe

    2013-12-14

    Large technological progress in oxynitridation processing leads to the introduction of silicon oxynitride as ultra-thin gate oxide. On the theoretical side, few studies have been dedicated to the process modelling of oxynitridation. Such an objective is a considerable challenge regarding the various atomistic mechanisms occurring during this fabrication step. In this article, some progress performed to adapt the reaction rate approach for the modelling of oxynitride growth by a nitrous ambient are reported. The Ellis and Buhrman's approach is used for the gas phase decomposition modelling. Taking into account the mass balance of the species at the interface between the oxynitride and silicon, a minimal kinetic model describing the oxide growth has been calibrated and implemented. The influence of nitrogen on the reaction rate has been introduced in an empirical way. The oxidation kinetics predicted with this minimal model compares well with several experiments.

  8. Oxidation of the silicon terminated (1 0 0) diamond surface

    NASA Astrophysics Data System (ADS)

    Schenk, A. K.; Sear, M. J.; Tadich, A.; Stacey, A.; Pakes, C. I.

    2017-01-01

    The oxidation of the silicon terminated (1 0 0) diamond surface is investigated with a combination of high resolution photoelectron spectroscopy, low energy electron diffraction and near edge x-ray absorption fine structure spectroscopy. The effects of molecular {{\\text{O}}2} and {{\\text{H}}2}\\text{O} dosing under UHV conditions, as well as exposure to ambient conditions, have been explored. Our findings indicate that the choice of oxidant has little influence over the resulting surface chemistry, and we attribute approximately 85% of the surface oxygen to a peroxide-bridging arrangement. Additionally, oxidation does not alter the silicon-carbon bonding at the surface and therefore the ≤ft(3× 1\\right) reconstruction is still present.

  9. The effect of oxide precipitates on minority carrier lifetime in n-type silicon

    NASA Astrophysics Data System (ADS)

    Murphy, J. D.; Al-Amin, M.; Bothe, K.; Olmo, M.; Voronkov, V. V.; Falster, R. J.

    2015-12-01

    Supersaturated levels of interstitial oxygen in Czochralski silicon can lead to the formation of oxide precipitates. Although beneficial from an internal gettering perspective, oxygen-related extended defects give rise to recombination which reduces minority carrier lifetime. The highest efficiency silicon solar cells are made from n-type substrates in which oxide precipitates can have a detrimental impact on cell efficiency. In order to quantify and to understand the mechanism of recombination in such materials, we correlate injection level-dependent minority carrier lifetime data measured with silicon nitride surface passivation with interstitial oxygen loss and precipitate concentration measurements in samples processed under substantially different conditions. We account for surface recombination, doping level, and precipitate morphology to present a generalised parameterisation of lifetime. The lifetime data are analysed in terms of recombination activity which is dependent on precipitate density or on the surface area of different morphologies of precipitates. Correlation of the lifetime data with interstitial oxygen loss data shows that the recombination activity is likely to be dependent on the precipitate surface area. We generalise our findings to estimate the impact of oxide precipitates with a given surface area on lifetime in both n-type and p-type silicon.

  10. High-density-plasma (HDP)-CVD oxide to thermal oxide wafer bonding for strained silicon layer transfer applications

    NASA Astrophysics Data System (ADS)

    Singh, R.; Radu, I.; Reiche, M.; Himcinschi, C.; Kuck, B.; Tillack, B.; Gösele, U.; Christiansen, S. H.

    2007-01-01

    Direct wafer bonding between high-density-plasma chemical vapour deposited (HDP-CVD) oxide and thermal oxide (TO) has been investigated. HDP-CVD oxides, about 230 nm in thickness, were deposited on Si(0 0 1) control wafers and the wafers of interest that contain a thin strained silicon (sSi) layer on a so-called virtual substrate that is composed of relaxed SiGe (˜4 μm thick) on Si(0 0 1) wafers. The surfaces of the as-deposited HDP-CVD oxides on the Si control wafers were smooth with a root-mean-square (RMS) roughness of <1 nm, which is sufficiently smooth for direct wafer bonding. The surfaces of the sSi/SiGe/Si(0 0 1) substrates show an RMS roughness of >2 nm. After HDP-CVD oxide deposition on the sSi/SiGe/Si substrates, the RMS roughness of the oxide surfaces was also found to be the same, i.e., >2 nm. To use these wafers for direct bonding the RMS roughness had to be reduced below 1 nm, which was carried out using a chemo-mechanical polishing (CMP) step. After bonding the HDP-CVD oxides to thermally oxidized handle wafers, the bonded interfaces were mostly bubble- and void-free for the silicon control and the sSi/SiGe/Si(0 0 1) wafers. The bonded wafer pairs were then annealed at higher temperatures up to 800 °C and the bonded interfaces were still found to be almost bubble- and void-free. Thus, HDP-CVD oxide is quite suitable for direct wafer bonding and layer transfer of ultrathin sSi layers on oxidized Si wafers for the fabrication of novel sSOI substrates.

  11. Oxidation Kinetics of Chemically Vapor-Deposited Silicon Carbide in Wet Oxygen

    NASA Technical Reports Server (NTRS)

    Opila, Elizabeth J.

    1994-01-01

    The oxidation kinetics of chemically vapor-deposited SiC in dry oxygen and wet oxygen (P(sub H2O) = 0.1 atm) at temperatures between 1200 C and 1400 C were monitored using thermogravimetric analysis. It was found that in a clean environment, 10% water vapor enhanced the oxidation kinetics of SiC only very slightly compared to rates found in dry oxygen. Oxidation kinetics were examined in terms of the Deal and Grove model for oxidation of silicon. It was found that in an environment containing even small amounts of impurities, such as high-purity Al2O3 reaction tubes containing 200 ppm Na, water vapor enhanced the transport of these impurities to the oxidation sample. Oxidation rates increased under these conditions presumably because of the formation of less protective sodium alumino-silicate scales.

  12. Comparison of plasma bismuth levels after oral dosing with basic bismuth carbonate or tripotassium dicitrato bismuthate.

    PubMed

    Madaus, S; Schulte-Frohlinde, E; Scherer, C; Kämmereit, A; Schusdziarra, V; Classen, M

    1992-04-01

    In 20 healthy subjects plasma bismuth concentration was measured after single oral doses of basic bismuth carbonate or tripotassium dicitrato bismuthate. The drugs were administered in the fasted state or immediately after ingestion of a standard breakfast. After basic bismuth carbonate, plasma bismuth rose to concentrations between 0.7 and 2.6 micrograms/L in the fasted state, while after the meal the maximal level was only 1.3 micrograms/L. In contrast to these very low levels after basic bismuth carbonate, the administration of tripotassium dicitrato bismuthate was paralleled by an increase of plasma bismuth to concentrations between 15 and 232 micrograms/L with a mean peak value of 64 +/- 15.3 (S.E.M.) micrograms/L in the fasted state. Postprandial ingestion of tripotassium dicitrato bismuthate attenuated the peak concentrations to 10.9 +/- 6.3 micrograms/L. One subject, however, had a value of 120 micrograms/L. This study demonstrates that basic bismuth carbonate leads to very low plasma bismuth concentrations, which are far below the critical range that might eventually be associated with bismuth neurotoxicity. Therefore this compound can be considered potentially useful for bismuth therapy of gastrointestinal disorders.

  13. Influence of Fluorine on the Conductivity and Oxidation of Silicon Nanomembranes after Hydrofluoric Acid Treatment

    NASA Astrophysics Data System (ADS)

    Zhao, Xiang-Fu; Han, Ping; Zhang, Rong; Zheng, You-Dou

    2011-08-01

    After immersion in hydrofluoric acid, the sheet resistance of a 220-nm-thick silicon nanomembrane, measured in dry air by van der Pauw method, drops around two orders of magnitude initially, then increases and reaches the level of a sample with a native oxide surface in about one month. The surface component and oxidation rate are also characterized by x-ray photo electronic spectroscopy measurement. Fluorine is found to play a significant role in improving conductivity and has no apparent influence on the oxidation rate after hydrofluoric acid treatment.

  14. Destruction of monocrystalline silicon with nanosecond pulsed fiber laser accompanied by the oxidation of ablation microparticles

    NASA Astrophysics Data System (ADS)

    Veiko, V. P.; Skvortsov, A. M.; Huynh, C. T.; Petrov, A. A.

    2013-11-01

    In this work, we report an observation of process of local destruction monocrystalline silicon with a scanning beam irradiation of pulse ytterbium fiber laser with a wavelength λ= 1062 nm, accompanied by the oxidation of ablation microparticles. It is shown that depending on the power density of irradiation was observed a large scatter size of the microparticles. From a certain average power density is observed beginning oxidation particulate emitted from the surface of the irradiated area. By varying the parameters of the laser beam such as scanning speed, pulse repetition rate, overlap of laser spot, radiation dose can be achieved almost complete oxidation of all formed during the ablation of microparticles.

  15. Crack healing in silicon nitride due to oxidation

    SciTech Connect

    Choi, S.R.; Tikare, V.; Pawlik, R.

    1991-10-01

    The crack healing behavior of a commercial, MgO-containing, hot pressed Si3N4 was studied as a function of temperature in oxidizing and inert annealing environments. Crack healing occurred at a temperature 800 C or higher due to oxidation regardless of crack size, which ranged from 100 microns (indentation crack) to 1.7 mm (SEPB precrack). The resulting strength and apparent fracture toughness increased at crack healing temperature by 100 percent and 300 percent, respectively. The oxide layer present in the crack plane was found to be highly fatigue resistant, indicating that the oxide is not solely silicate glass, but a mixture of glass, enstatite, and/or cristobalite that was insensitive to fatigue in a room temperature water environment. 20 refs.

  16. Crack healing in silicon nitride due to oxidation

    NASA Technical Reports Server (NTRS)

    Choi, Sung R.; Tikare, Veena; Pawlik, Ralph

    1991-01-01

    The crack healing behavior of a commercial, MgO-containing, hot pressed Si3N4 was studied as a function of temperature in oxidizing and inert annealing environments. Crack healing occurred at a temperature 800 C or higher due to oxidation regardless of crack size, which ranged from 100 microns (indentation crack) to 1.7 mm (SEPB precrack). The resulting strength and apparent fracture toughness increased at crack healing temperature by 100 percent and 300 percent, respectively. The oxide layer present in the crack plane was found to be highly fatigue resistant, indicating that the oxide is not solely silicate glass, but a mixture of glass, enstatite, and/or cristobalite that was insensitive to fatigue in a room temperature water environment.

  17. Efficient oxidative hydrogen peroxide production and accumulation in photoelectrochemical water splitting using a tungsten trioxide/bismuth vanadate photoanode.

    PubMed

    Fuku, Kojiro; Sayama, Kazuhiro

    2016-04-07

    An aqueous solution of hydrogen carbonate (HCO3(-)) facilitated oxidative hydrogen peroxide (H2O2) production from water on a WO3/BiVO4 photoanode with the simultaneous production of hydrogen (H2) on a Pt cathode even at an applied voltage far lower than the theoretical electrolysis voltage (+1.77 V vs. RHE) under simulated solar light. The unprecedentedly efficient simultaneous production and accumulation of H2O2 and H2 was achieved in 2.0 M KHCO3 at low temperature, and the maximum selectivity, accumulated concentration and turnover number (TON) of H2O2 generated reached ca. 54%, more than 2 mM and 108, respectively.

  18. Magnetometer uses bismuth-selenide

    NASA Technical Reports Server (NTRS)

    Woollman, J. A.; Spain, I. L.; Beale, H.

    1972-01-01

    Characteristics of bismuth-selenide magnetometer are described. Advantages of bismuth-selenide magnetometer over standard magnetometers are stressed. Thermal stability of bismuth-selenide magnetometer is analyzed. Linearity of output versus magnetic field over wide range of temperatures is reported.

  19. Click chemistry-based functionalization on non-oxidized silicon substrates.

    PubMed

    Li, Yan; Cai, Chengzhi

    2011-10-04

    Copper-catalyzed azide-alkyne cycloaddition (CuAAC), combined with the chemical stability of the Si-C-bound organic layer, serves as an efficient tool for the modification of silicon substrates, particularly for the immobilization of complex biomolecules. This review covers recent advances in the preparation of alkynyl- or azido-terminated "clickable" platforms on non-oxidized silicon and their further derivatization by means of the CuAAC reaction. The exploitation of these "click"-functionalized organic thin films as model surfaces to study many biological events was also addressed, as they are directly relevant to the on-going effort of creating silicon-based molecular electronics and chemical/biomolecular sensors.

  20. Biocompatible magnetofluorescent probes: luminescent silicon quantum dots coupled with superparamagnetic iron(III) oxide.

    PubMed

    Erogbogbo, Folarin; Yong, Ken-Tye; Hu, Rui; Law, Wing-Cheung; Ding, Hong; Chang, Ching-Wen; Prasad, Paras N; Swihart, Mark T

    2010-09-28

    Luminescent silicon quantum dots (SiQDs) are gaining momentum in bioimaging applications, based on their unique combination of optical properties and biocompatibility. Here, we report the development of a multimodal probe that combines the optical properties of silicon quantum dots with the superparamagnetic properties of iron oxide nanoparticles to create biocompatible magnetofluorescent nanoprobes. Multiple nanoparticles of each type are coencapsulated within the hydrophobic core of biocompatible phospholipid-polyethyleneglycol (DSPE-PEG) micelles. The size distribution and composition of the magnetofluorescent nanoprobes were characterized by transmission electron microscopy (TEM) and energy-dispersive X-ray spectroscopy (EDS). Enhanced cellular uptake of these probes in the presence of a magnetic field was demonstrated in vitro. Their luminescence stability in a prostate cancer tumor model microenvironment was demonstrated in vivo. This paves the way for multimodal silicon quantum-dot-based nanoplatforms for a variety of imaging and delivery applications.

  1. Microcrystalline silicon oxides for silicon-based solar cells: impact of the O/Si ratio on the electronic structure

    NASA Astrophysics Data System (ADS)

    Bär, M.; Starr, D. E.; Lambertz, A.; Holländer, B.; Alsmeier, J.-H.; Weinhardt, L.; Blum, M.; Gorgoi, M.; Yang, W.; Wilks, R. G.; Heske, C.

    2014-10-01

    Hydrogenated microcrystalline silicon oxide (μc-SiOx:H) layers are one alternative approach to ensure sufficient interlayer charge transport while maintaining high transparency and good passivation in Si-based solar cells. We have used a combination of complementary x-ray and electron spectroscopies to study the chemical and electronic structure of the (μc-SiOx:H) material system. With these techniques, we monitor the transition from a purely Si-based crystalline bonding network to a silicon oxide dominated environment, coinciding with a significant decrease of the material's conductivity. Most Si-based solar cell structures contain emitter/contact/passivation layers. Ideally, these layers fulfill their desired task (i.e., induce a sufficiently high internal electric field, ensure a good electric contact, and passivate the interfaces of the absorber) without absorbing light. Usually this leads to a trade-off in which a higher transparency can only be realized at the expense of the layer's ability to properly fulfill its task. One alternative approach is to use hydrogenated microcrystalline silicon oxide (μc-SiOx:H), a mixture of microcrystalline silicon and amorphous silicon (sub)oxide. The crystalline Si regions allow charge transport, while the oxide matrix maintains a high transparency. To date, it is still unclear how in detail the oxygen content influences the electronic structure of the μc-SiOx:H mixed phase material. To address this question, we have studied the chemical and electronic structure of the μc-SiOx:H (0 <= x = O/Si <=1) system with a combination of complementary x-ray and electron spectroscopies. The different surface sensitivities of the employed techniques help to reduce the impact of surface oxides on the spectral interpretation. For all samples, we find the valence band maximum to be located at a similar energy with respect to the Fermi energy. However, for x > 0.5, we observe a pronounced decrease of Si 3s - Si 3p hybridization in favor

  2. Ultrathin oxide (SiOx) grown on HF-treated silicon

    NASA Astrophysics Data System (ADS)

    Benny, E. T. P.; Majhi, J.

    1992-02-01

    Ultrathin tunnel oxides (SiOx) were grown on silicon, pretreated with 5% hydrofluoric acid, using high pressure, low temperature oxidation. These oxides were characterized using variable illumination current-voltage (Voc - Jsc) measurements on semi-transparent metal gate MIS diodes. The open circuit voltage (Voc), short circuit current (Jsc), ideality factor (n) and reverse saturation current (Jo) are studied as a function of oxidation time. The interface state density Dits for the HF treated sample was found to decrease from 2 X 1012 cm-2eV-1 to 9.21 X 1011 cm-2eV-1. Highly reproducible, good quality ultrathin oxides were obtained by pre-treatment of the wafer in hydrofluoric acid.

  3. Molecular dynamics simulation of silicon oxidation enhanced by energetic hydrogen ion irradiation

    NASA Astrophysics Data System (ADS)

    Mizotani, Kohei; Isobe, Michiro; Fukasawa, Masanaga; Nagahata, Kazunori; Tatsumi, Tetsuya; Hamaguchi, Satoshi

    2015-04-01

    Molecular dynamics numerical simulations have been performed to clarify the mechanism of enhanced oxidation in Si during silicon gate etching by HBr/O2 plasmas. Such enhanced oxidation sometimes manifests itself as Si recess during gate etching processes. When a Si substrate is subject to energetic ion bombardment together with a flux of radical species, our study has identified the cause of such enhanced oxidation in Si as enhanced O diffusion arising from the momentum transfer from energetic H atoms to O atoms on the surface or in the subsurface of the Si substrate. No chemical effect such as hydrogenation of Si plays a role for the enhanced oxidation. Simulation results are found to be in good agreement with earlier experimental observations of ion-irradiation-enhanced oxidation obtained by beam experiments.

  4. Abnormal room-temperature oxidation of silicon in the presence of copper

    NASA Astrophysics Data System (ADS)

    Hinode, Kenji; Takeda, Ken'ichi; Kondo, Seiichi

    2002-09-01

    The room-temperature reaction between copper (Cu) and silicon (Si) was investigated. The areas of an Si substrate covered with very thin or island-like Cu oxidized formed thick (>100 nm) oxide (SiO2). The areas covered with thick and nonisland-like Cu film did not. These unoxidized areas transformed into SiO2 when the side surfaces of the sample were exposed to air after sectioning for transmission electron microscope observation. The supply of oxygen was found to control this oxidation process. The presence of a Cu silicide, such as Cu3Si, was found to not necessarily be needed for oxidation. The oxidation rate estimated from observation was about 150 nm/month. Copper atoms were detected at the SiO2/Si interface and identified not as silicides but as body-center-cubic-structured Cu several atom layers thick. copyright 2002 American Vacuum Society.

  5. Room-temperature oxidation of silicon catalyzed by Cu3Si

    NASA Astrophysics Data System (ADS)

    Harper, J. M. E.; Charai, A.; Stolt, L.; d'Heurle, F. M.; Fryer, P. M.

    1990-06-01

    We demonstrate remarkably rapid oxidation of (100) silicon at room temperature catalyzed by the presence of Cu3Si. Thermal oxidation of Si is normally carried out at temperatures above 700 °C. Oxidation of many metal silicides occurs more rapidly than that of Si, but under controlled conditions results in a surface layer of SiO2. In contrast, the oxidation process described here produces a thick layer of SiO2 underneath the copper-rich surface layer. The SiO2 layer grows spontaneously to over 1 μm in thickness in several weeks in air at room temperature. Analysis by Rutherford backscattering, Auger electron spectroscopy, cross-sectional transmission electron microscopy, and scanning electron microscopy reveals the presence of Cu3Si at the buried SiO2/Si interface, epitaxially related to the underlying Si substrate. Catalytic action by this silicide phase appears responsible for the unusual oxidation process.

  6. Hydrothermal synthesis map of bismuth titanates

    SciTech Connect

    Sardar, Kripasindhu; Walton, Richard I.

    2012-05-15

    The hydrothermal synthesis of four bismuth titanate materials from common bismuth and titanium precursors under hydrothermal conditions is described. Reaction of NaBiO{sub 3}{center_dot}2H{sub 2}O and anatase TiO{sub 2} in concentrated NaOH solution at 240 Degree-Sign C is shown to produce perovskite and sillenite phases Na{sub 0.5}Bi{sub 0.5}TiO{sub 3} and Bi{sub 12}TiO{sub 20}, depending on the ratio of metal precursors used. When KOH solution is used and a 1:1 ratio of the same precursors, a pyrochlore Bi{sub 1.43}Ti{sub 2}O{sub 6}(OH){sub 0.29}(H{sub 2}O){sub 0.66} is formed. The use of a mixture of HNO{sub 3} and NaOH is shown to facilitate the formation of the Aurivillius-type bismuth titanate Bi{sub 4}Ti{sub 3}O{sub 12}. The phases have been isolated separately as phase-pure powders and profile refinement of powder X-ray diffraction data allows comparisons with comparable materials reported in the literature. Analysis of Bi L{sub III}-edge X-ray absorption near edge structure (XANES) spectra of the materials shows the oxidation state of bismuth is +3 in all of the hydrothermally derived products. - Graphical abstract: Use of NaBiO{sub 3}{center_dot}2H{sub 2}O and TiO{sub 2} as reagents under hydrothermal conditions allows the phase-pure preparation of four crystalline bismuth titanate materials. Highlights: Black-Right-Pointing-Pointer NaBiO{sub 3} and TiO{sub 2} under hydrothermal conditions allow formation of bismuth titanates. Black-Right-Pointing-Pointer Synthesis of four distint phases has been mapped. Black-Right-Pointing-Pointer Bi LIII-edge XANES shows Bi is reduced to oxidation state +3 in all materials. Black-Right-Pointing-Pointer A new hydrated bismuth titanate pyrochlore has been isolated.

  7. Locally oxidized silicon surface-plasmon Schottky detector for telecom regime.

    PubMed

    Goykhman, Ilya; Desiatov, Boris; Khurgin, Jacob; Shappir, Joseph; Levy, Uriel

    2011-06-08

    We experimentally demonstrate an on-chip nanoscale silicon surface-plasmon Schottky photodetector based on internal photoemission process and operating at telecom wavelengths. The device is fabricated using a self-aligned approach of local-oxidation of silicon (LOCOS) on silicon on insulator substrate, which provides compatibility with standard complementary metal-oxide semiconductor technology and enables the realization of the photodetector and low-loss bus photonic waveguide at the same fabrication step. Additionally, LOCOS technique allows avoiding lateral misalignment between the silicon surface and the metal layer to form a nanoscale Schottky contact. The fabricated devices showed enhanced detection capability for shorter wavelengths that is attributed to increased probability of the internal photoemission process. We found the responsivity of the nanodetector to be 0.25 and 13.3 mA/W for incident optical wavelengths of 1.55 and 1.31 μm, respectively. The presented device can be integrated with other nanophotonic and nanoplasmonic structures for the realization of monolithic opto-electronic circuitry on-chip.

  8. Novel Iron-oxide Catalyzed CNT Formation on Semiconductor Silicon Nanowire

    PubMed Central

    Adam, Tijjani; U, Hashim

    2014-01-01

    An aqueous ferric nitrate nonahydrate (Fe(NO3)3.9H2O) and magnesium oxide (MgO) were mixed and deposited on silicon nanowires (SiNWs), the carbon nanotubes (CNTs) formed by the concentration of Fe3O4/MgO catalysts with the mole ratio set at 0.15:9.85 and 600°C had diameter between 15.23 to 90nm with high-density distribution of CNT while those with the mole ratio set at 0.45:9.55 and 730°C had diameter of 100 to 230nm. The UV/Vis/NIR and FT-IR spectroscopes clearly confirmed the presence of the silicon-CNTs hybrid structure. UV/Vis/NIR, FT-IR spectra and FESEM images confirmed the silicon-CNT structure exists with diameters ranging between 15-230nm. Thus, the study demonstrated cost effective method of silicon-CNT composite nanowire formation via Iron-oxide Catalyze synthesis. PMID:25237290

  9. Effect of W and WC on the oxidation resistance of yttria-doped silicon nitride

    NASA Technical Reports Server (NTRS)

    Schuon, S.

    1980-01-01

    The effect of tungsten and tungsten carbide contamination on the oxidation and cracking in air of yttria-doped silicon nitride ceramics is investigated. Silicon nitride powder containing 8 wt % Y2O3 was doped with 2 wt % W, 4 wt % W, 2 wt % WC or left undoped, and sintered in order to simulate contamination during milling, and specimens were exposed in air to 500, 750 and 1350 C for various lengths of time. Scanning electron and optical microscopy and X-ray diffraction of the specimens in the as-sintered state reveals that the addition of W or WC does not affect the phase relationships in the system, composed of alpha and beta Si3N4, melilite and an amorphous phase. Catastrophic oxidation is observed at 750 C in specimens containing 2 and 4 wt % W, accompanied by the disappearance of alpha Si3N4 and melilite from the structure. At 1350 C, the formation of a protective glassy oxide layer was observed on all specimens without catastrophic oxidation, and it is found that pre-oxidation at 1350 C also improved the oxidation resistance at 750 C of bars doped with 4 wt % W. It is suggested that tungsten contamination from WC grinding balls may be the major cause of the intermediate-temperature cracking and instability frequently observed in Si3N4-8Y2O3.

  10. Thermal oxidation of silicon in a residual oxygen atmosphere—the RESOX process—for self-limiting growth of thin silicon dioxide films

    NASA Astrophysics Data System (ADS)

    Wright, Jason T.; Carbaugh, Daniel J.; Haggerty, Morgan E.; Richard, Andrea L.; Ingram, David C.; Kaya, Savas; Jadwisienczak, Wojciech M.; Rahman, Faiz

    2016-10-01

    We describe in detail the growth procedures and properties of thermal silicon dioxide grown in a limited and dilute oxygen atmosphere. Thin thermal oxide films have become increasingly important in recent years due to the continuing down-scaling of ultra large scale integration metal oxide silicon field effect transistors. Such films are also of importance for organic transistors where back-gating is needed. The technique described here is novel and allows self-limited formation of high quality thin oxide films on silicon surfaces. This technique is easy to implement in both research laboratory and industrial settings. Growth conditions and their effects on film growth have been described. Properties of the resulting oxide films, relevant for microelectronic device applications, have also been investigated and reported here. Overall, our findings are that thin, high quality, dense silicon dioxide films of thicknesses up to 100 nm can be easily grown in a depleted oxygen environment at temperatures similar to that used for usual silicon dioxide thermal growth in flowing dry oxygen.

  11. High-stability transparent amorphous oxide TFT with a silicon-doped back-channel layer

    NASA Astrophysics Data System (ADS)

    Lee, Hyoung-Rae; Park, Jea-Gun

    2014-10-01

    We significantly reduced various electrical instabilities of amorphous indium gallium zinc oxide thin-film transistors (TFTs) by using the co-deposition of silicon on an a-IGZO back channel. This process showed improved stability of the threshold voltage ( V th ) under high temperature and humidity and negative gate-bias illumination stress (NBIS) without any reduction of IDS. The enhanced stability was achieved with silicon, which has higher metal-oxide bonding strengths than gallium does. Additionally, SiO X distributed on the a-IGZO surface reduced the adsorption and the desorption of H2O and O2. This process is applicable to the TFT manufacturing process with a variable sputtering target.

  12. Structure and luminescence evolution of annealed Europium-doped silicon oxides films.

    PubMed

    Li, Dongsheng; Zhang, Xuwu; Jin, Lu; Yang, Deren

    2010-12-20

    Europium (Eu)-doped silicon oxide films with Eu concentrations from 2.1 to 4.7 at. % were deposited by electron beam evaporation. The Eu related luminescence from the films was found to be sensitive to the evolution of film microstructures at different annealing temperatures. Luminescence centers in the films changed from defects of silicon oxides to 4f(6)5d-4f(7)(8S(7/2)) transition of Eu2+ after the films annealed in N2 at temperature higher than 800 °C. The evolution of luminescence centers was attributed to the formation of europium silicate (EuSiO3), which was confirmed by x-ray photoelectron spectroscopy, x-ray diffraction, time resolved photoluminescence, and transmission electron microscopy.

  13. Enhanced electroluminescence from nanoscale silicon p+ -n junctions made with an anodic aluminum oxide pattern.

    PubMed

    Hong, T; Chen, T; Ran, G Z; Wen, J; Li, Y Z; Dai, T; Qin, G G

    2010-01-15

    An enhancement of the electroluminescence (EL) from nanoscale silicon p(+)-n junctions made with an anodic aluminum oxide (AAO) pattern was demonstrated. The nanoporous AAO pattern with a pore density of 1.4 x 10(10) cm(-2) and a pore diameter of 50 +/- 10 nm was fabricated by the two-step anodic oxidation method on a n-type silicon wafer. The nanoscale AAO patterned Si p(+)-n junctions achieved an EL enhancement factor up to about 5 compared to the unpatterned Si p(+)-n junctions. The enhancement may originate from a reduction of nonradiative recombination due to partial passivation of the Si surface by the AAO pattern and improvement of the light extraction due to surface nanotextures.

  14. Selective tuning of high-Q silicon photonic crystal nanocavities via laser-assisted local oxidation.

    PubMed

    Chen, Charlton J; Zheng, Jiangjun; Gu, Tingyi; McMillan, James F; Yu, Mingbin; Lo, Guo-Qiang; Kwong, Dim-Lee; Wong, Chee Wei

    2011-06-20

    We examine the cavity resonance tuning of high-Q silicon photonic crystal heterostructures by localized laser-assisted thermal oxidation using a 532 nm continuous wave laser focused to a 2.5 μm radius spot-size. The total shift is consistent with the parabolic rate law. A tuning range of up to 8.7 nm is achieved with ∼ 30 mW laser powers. Over this tuning range, the cavity Qs decreases from 3.2×10(5) to 1.2×10(5). Numerical simulations model the temperature distributions in the silicon photonic crystal membrane and the cavity resonance shift from oxidation.

  15. Determination of Mean Thickness of an Oxide Layer on a Silicon Sphere by Spectroscopic Ellipsometry

    NASA Astrophysics Data System (ADS)

    Zhang, Ji-Tao; Li, Yan; Luo, Zhi-Yong; Wu, Xue-Jian

    2010-05-01

    One of the biggest obstacles to reduce the uncertainty of the Avogadro constant NA is such that there will be an oxide layers on the surface of a silicon sphere. The thickness of this layer is measured by a modified spectroscopic ellipsometer, which can eliminate the influence of the curved surface, and the results are calibrated by x-ray reflectivity. Fifty positions distributed nearly uniformly on the surface of the silicon sphere are measured twice. The results show that the mean thickness of the overall oxide layer is 3.75 nm with the standard uncertainty of 0.21 nm, which means that the relative uncertainty component of NA owing to this layer can be reduced to 1.2 × 10-8.

  16. Oxidation resistant high temperature thermal cycling resistant coatings on silicon-based substrates and process for the production thereof

    DOEpatents

    Sarin, V.K.

    1990-08-21

    An oxidation resistant, high temperature thermal cycling resistant coated ceramic article for ceramic heat engine applications is disclosed. The substrate is a silicon-based material, i.e. a silicon nitride- or silicon carbide-based monolithic or composite material. The coating is a graded coating of at least two layers: an intermediate AlN or Al[sub x]N[sub y]O[sub z] layer and an aluminum oxide or zirconium oxide outer layer. The composition of the coating changes gradually from that of the substrate to that of the AlN or Al[sub x]N[sub y]O[sub z] layer and further to the composition of the aluminum oxide or zirconium oxide outer layer. Other layers may be deposited over the aluminum oxide layer. A CVD process for depositing the graded coating on the substrate is also disclosed.

  17. Oxidation resistant high temperature thermal cycling resistant coatings on silicon-based substrates and process for the production thereof

    DOEpatents

    Sarin, Vinod K.

    1990-01-01

    An oxidation resistant, high temperature thermal cycling resistant coated ceramic article for ceramic heat engine applications. The substrate is a silicon-based material, i.e. a silicon nitride- or silicon carbide-based monolithic or composite material. The coating is a graded coating of at least two layers: an intermediate AlN or Al.sub.x N.sub.y O.sub.z layer and an aluminum oxide or zirconium oxide outer layer. The composition of the coating changes gradually from that of the substrate to that of the AlN or Al.sub.x N.sub.y O.sub.z layer and further to the composition of the aluminum oxide or zirconium oxide outer layer. Other layers may be deposited over the aluminum oxide layer. A CVD process for depositing the graded coating on the substrate is also disclosed.

  18. Silicon based solar cells using a multilayer oxide as emitter

    NASA Astrophysics Data System (ADS)

    Bao, Jie; Wu, Weiliang; Liu, Zongtao; Shen, Hui

    2016-08-01

    In this work, n-type silicon based solar cells with WO3/Ag/WO3 multilayer films as emitter (WAW/n-Si solar cells) were presented via simple physical vapor deposition (PVD). Microstructure and composition of WAW/n-Si solar cells were studied by TEM and XPS, respectively. Furthermore, the dependence of the solar cells performances on each WO3 layer thickness was investigated. The results indicated that the bottom WO3 layer mainly induced band bending and facilitated charge-carriers separation, while the top WO3 layer degraded open-circuit voltage but actually improved optical absorption of the solar cells. The WAW/n-Si solar cells, with optimized bottom and top WO3 layer thicknesses, exhibited 5.21% efficiency on polished wafer with area of 4 cm2 under AM 1.5 condition (25 °C and 100 mW/cm2). Compared with WO3 single-layer film, WAW multilayer films demonstrated better surface passivation quality but more optical loss, while the optical loss could be effectively reduced by implementing light-trapping structures. These results pave a new way for dopant-free solar cells in terms of low-cost and facile process flow.

  19. Bismuth compounds in medicinal chemistry.

    PubMed

    Salvador, Jorge A R; Figueiredo, Sandra A C; Pinto, Rui M A; Silvestre, Samuel M

    2012-07-01

    In recent years, the chemical potential of bismuth and bismuth compounds has been actively exploited. Bismuth salts are known for their low toxicity, making them potential valuable reagents for large-scale synthesis, which becomes more obvious when dealing with products such as active pharmaceutical ingredients or synthetic intermediates. Conversely, bismuth compounds have been widely used in medicine. After extensive use in the treatments of syphilis and other bacterial infections before the advent of modern antibiotics, bismuth compounds remain important for the treatment of several gastrointestinal disorders and also exhibit antimicrobial properties and cytotoxic activity, among others. This review updates relevant advances in the past few years, concerning the application of bismuth reagents and catalysts in innovative synthetic processes for the preparation of compounds of medicinal interest, as well as the preparation, biological evaluation and potential medicinal uses of bismuth compounds.

  20. High-temperature oxidation studies of several silicon-based systems

    NASA Astrophysics Data System (ADS)

    Ramberg, Charles Eric

    1997-10-01

    A mixed control oxidation model was used in Chapter 1 to reevaluate historical assumptions regarding diffusion controlled oxidation. Rather than assuming thermodynamic equilibrium at the scale/substrate interface (a fast chemical reaction), a mixed control model allows finite rates for both the diffusion process and the chemical reaction, which occur in series. This coupling of the two mechanisms by the interfacial oxygen concentration can result in kinetics that appear completely parabolic. However, the interfacial oxygen concentration may never reach the equilibrium thermodynamic value, and may in fact remain at a significant percentage of the atmospheric value, despite the apparently parabolic kinetics. In Chapter 2, siliconized silicon carbide samples were oxidized in high purity oxygen from 1250 to 1600sp°C. The parabolic rate constants for the siliconized SiC at temperatures below 1400sp°C agreed well with literature values for CVD-SiC and single crystal SiC. At higher temperatures, the parabolic rate constants and activation energy for siliconized SiC oxidation increased. However, the parabolic rate constants obtained in this study for oxidation of CVD-SiC at 1500 and 1600 C were consistent with a single activation energy extrapolated from lower temperature rate constants obtained in prior studies. In Chapter 3, dense, homogeneous samples in the Mo-Al-Si system were fabricated using a combination of self propagating synthesis (SPS) and hot pressing. Materials in the Mosb3Alsb8-MoSisb2 pseudobinary had a strong tendency to form alumina (Alsb2Osb3) scales. During oxidation at 600 C for 50 days, arc melted Mosb3Alsb8 was extremely oxidation resistant-forming a 170 nm thick oxide scale. Increasing the silicon content reduced the oxidation resistance at this temperature for arc-melted samples. At higher temperatures, compositions in the Mosb3Alsb8-MoSisb2 pseudobinary with silicon to aluminum ratios greater than 2:1 formed scales containing both silica and

  1. Silicon oxide based high capacity anode materials for lithium ion batteries

    DOEpatents

    Deng, Haixia; Han, Yongbong; Masarapu, Charan; Anguchamy, Yogesh Kumar; Lopez, Herman A.; Kumar, Sujeet

    2017-03-21

    Silicon oxide based materials, including composites with various electrical conductive compositions, are formulated into desirable anodes. The anodes can be effectively combined into lithium ion batteries with high capacity cathode materials. In some formulations, supplemental lithium can be used to stabilize cycling as well as to reduce effects of first cycle irreversible capacity loss. Batteries are described with surprisingly good cycling properties with good specific capacities with respect to both cathode active weights and anode active weights.

  2. Oxidation of chemically-vapor-deposited silicon nitride and single-crystal silicon

    NASA Technical Reports Server (NTRS)

    Choi, Doo J.; Fischbach, David B.; Scott, William D.

    1989-01-01

    The present 1000 C and 1300 C oxidation tests on 111-oriented single-crystal Si and dense CVD Si3N4 notes the oxidation rates of the latter in wet O2, dry O2, wet inert gas, and steam atmosphere conditions to be several orders of magnitude lower than the rates for the former in identical atmospheric conditions. Although the parabolic rate constant for Si increased linearly as the water vapor pressure increased, the parabolic rate constant for Si3N4 exhibited a nonlinear dependency on water vapor pressure in the presence of O2. NO and NH3 formation at the reaction interface of Si3N4, and the counterpermeation of these reaction products, are noted to dominate reaction kinetics.

  3. Enhanced reduction of silicon oxide thin films on silicon under electron beam annealing

    NASA Astrophysics Data System (ADS)

    Kennedy, J.; Leveneur, J.; Fang, F.; Markwitz, A.

    2014-08-01

    Electron beam annealing is an interesting alternative to other annealing methods as it can provide high temperature, rapid heating and cooling and low level of impurity as it operates under high vacuum environment. Furthermore swamping the materials with electrons can lead to dramatic changes in the component valence states with the mechanism involving oxido-reduction reactions. This is illustrated in the present case with the enhancement of the reduction of SiO2. Commercial thermally grown 100 and 400 nm SiO2 films on Si were annealed under three different environments: furnace annealing in open atmosphere with O2 flow, high vacuum furnace annealing and electron beam annealing. The reduction and oxidation of SiO2 films on Si are investigated using ion beam analysis. The validity of the measurement method was confirmed by measuring the oxidation rate through successive Rutherford backscattering spectrometry (RBS) measurements. The oxidation kinetics were observed to be in excellent agreement with literature values. At 1000 °C reduction of the SiO2 film is observed only with electron beam annealing. A model is proposed to explain the effect of the electron beam.

  4. Performance of a biomimetic oxidation catalyst immobilized on silicon wafers: comparison with its gold congener.

    PubMed

    Eriksson, Kristofer L E; Chow, Winnie W Y; Puglia, Carla; Bäckvall, Jan-Erling; Göthelid, Emmanuelle; Oscarsson, Sven

    2010-11-02

    With the aim of extending the usefulness of an existing biomimetic catalytic system, cobalt porphyrin catalytic units with thiol linkers were heterogenized via chemical grafting to silicon wafers and utilized for the catalytic oxidation of hydroquinone to p-benzoquinone. Atomic force microscopy (AFM) and X-ray photoelectron spectroscopy (XPS) were used to analyze the morphology and composition of the heterogeneous catalyst. The results of the catalytic oxidation of hydroquinone obtained with porphyrins grafted on silicon were compared with those obtained earlier with the same catalyst in homogeneous phase and immobilized on gold. It was found that the catalysis could run over 400 h, without showing any sign of deactivation. The measured catalytic activity is at least 10 times higher than that measured under homogeneous conditions, but also 10 times lower than that observed with the catalytic unit immobilized on gold. The reasons of this discrepancy are discussed in term of substrate influence and overlayer organization. The silicon-immobilized catalyst has potential as an advanced functional material with applications in oxidative heterogeneous catalysis of organic reactions, as it combines long-term relatively high activity with low cost.

  5. Tuning Oleophobicity of Silicon Oxide Surfaces with Mixed Monolayers of Aliphatic and Fluorinated Alcohols.

    PubMed

    Lee, Austin W H; Gates, Byron D

    2016-12-13

    We demonstrate the formation of mixed monolayers derived from a microwave-assisted reaction of alcohols with silicon oxide surfaces in order to tune their surface oleophobicity. This simple, rapid method provides an opportunity to precisely tune the constituents of the monolayers. As a demonstration, we sought fluorinated alcohols and aliphatic alcohols as reagents to form monolayers from two distinct constituents for tuning the surface oleophobicity. The first aspect of this study sought to identify a fluorinated alcohol that formed monolayers with a relatively high surface coverage. It was determined that 1H,1H,2H,2H-perfluoro-1-octanol yielded high quality monolayers with a water contact angle (WCA) value of ∼110° and contact angle values of ∼80° with toluene and hexadecane exhibiting both an excellent hydrophobicity and oleophobicity. Tuning of the oleophobicity of the modified silicon oxide surfaces was achieved by controlling the molar ratio of 1H,1H,2H,2H-perfluoro-1-octanol within the reaction mixtures. Surface oleophobicity progressively decreased with a decrease in the fluorinated alcohol content while the monolayers maintained their hydrophobicity with WCA values of ∼110°. The simple and reliable approach to preparing monolayers of a tuned composition that is described in this article can be utilized to control the fluorocarbon content of the hydrophobic monolayers on silicon oxide surfaces.

  6. Comparison of beryllium oxide and pyrolytic graphite crucibles for boron doped silicon epitaxy

    SciTech Connect

    Ali, Dyan; Richardson, Christopher J. K.

    2012-11-15

    This article reports on the comparison of beryllium oxide and pyrolytic graphite as crucible liners in a high-temperature effusion cell used for boron doping in silicon grown by molecular beam epitaxy. Secondary ion mass spectroscopy analysis indicates decomposition of the beryllium oxide liner, leading to significant incorporation of beryllium and oxygen in the grown films. The resulting films are of poor crystal quality with rough surfaces and broad x-ray diffraction peaks. Alternatively, the use of pyrolytic graphite crucible liners results in higher quality films.

  7. Patterns of discoloration and oxidation by direct and scattered fluxes, especially oxygen on silicon

    NASA Technical Reports Server (NTRS)

    Frederickson, A. R.; Filz, R. C.; Rich, F. J.; Sagalyn, Paul L.

    1991-01-01

    A number of interesting discoloration patterns are clearly evident on M0002-1 which resides on three faces of LDEF: front face, rear face, and earth face. Most interesting is the pattern of blue oxidation on polished single crystal silicon apparently produced by once-scattered ram oxygen atoms along the earth face. Most of the other patterns are seen in the Thermal Control Paint. Also, severe oxidation of CR-39 polycarbonate occurred on the front face of LDEF, as expected. A complete explanation for the patterns has not yet been obtained.

  8. Tuning of structural, light emission and wetting properties of nanostructured copper oxide-porous silicon matrix formed on electrochemically etched copper-coated silicon substrates

    NASA Astrophysics Data System (ADS)

    Naddaf, M.

    2017-01-01

    Matrices of copper oxide-porous silicon nanostructures have been formed by electrochemical etching of copper-coated silicon surfaces in HF-based solution at different etching times (5-15 min). Micro-Raman, X-ray diffraction and X-ray photoelectron spectroscopy results show that the nature of copper oxide in the matrix changes from single-phase copper (I) oxide (Cu2O) to single-phase copper (II) oxide (CuO) on increasing the etching time. This is accompanied with important variation in the content of carbon, carbon hydrides, carbonyl compounds and silicon oxide in the matrix. The matrix formed at the low etching time (5 min) exhibits a single broad "blue" room-temperature photoluminescence (PL) band. On increasing the etching time, the intensity of this band decreases and a much stronger "red" PL band emerges in the PL spectra. The relative intensity of this band with respect to the "blue" band significantly increases on increasing the etching time. The "blue" and "red" PL bands are attributed to Cu2O and porous silicon of the matrix, respectively. In addition, the water contact angle measurements reveal that the hydrophobicity of the matrix surface can be tuned from hydrophobic to superhydrophobic state by controlling the etching time.

  9. Local anodic oxidation on hydrogen-intercalated graphene layers: oxide composition analysis and role of the silicon carbide substrate

    NASA Astrophysics Data System (ADS)

    Colangelo, Francesco; Piazza, Vincenzo; Coletti, Camilla; Roddaro, Stefano; Beltram, Fabio; Pingue, Pasqualantonio

    2017-03-01

    We investigate nanoscale local anodic oxidation (LAO) on hydrogen-intercalated graphene grown by controlled sublimation of silicon carbide (SiC). Scanning probe microscopy was used as a lithographic and characterization tool in order to investigate the local properties of the nanofabricated structures. The anomalous thickness observed after the graphene oxidation process is linked to the impact of LAO on the substrate. Micro-Raman (μ-Raman) spectroscopy was employed to demonstrate the presence of two oxidation regimes depending on the applied bias. We show that partial and total etching of monolayer graphene can be achieved by tuning the bias voltage during LAO. Finally, a complete compositional characterization was achieved by scanning electron microscopy and energy dispersive spectroscopy.

  10. Local anodic oxidation on hydrogen-intercalated graphene layers: oxide composition analysis and role of the silicon carbide substrate.

    PubMed

    Colangelo, Francesco; Piazza, Vincenzo; Coletti, Camilla; Roddaro, Stefano; Beltram, Fabio; Pingue, Pasqualantonio

    2017-03-10

    We investigate nanoscale local anodic oxidation (LAO) on hydrogen-intercalated graphene grown by controlled sublimation of silicon carbide (SiC). Scanning probe microscopy was used as a lithographic and characterization tool in order to investigate the local properties of the nanofabricated structures. The anomalous thickness observed after the graphene oxidation process is linked to the impact of LAO on the substrate. Micro-Raman (μ-Raman) spectroscopy was employed to demonstrate the presence of two oxidation regimes depending on the applied bias. We show that partial and total etching of monolayer graphene can be achieved by tuning the bias voltage during LAO. Finally, a complete compositional characterization was achieved by scanning electron microscopy and energy dispersive spectroscopy.

  11. Identification and Control of Gravity Related Defect Formation During Melt Growth of Bismuth-Silicate (Bi12SiO20)

    NASA Technical Reports Server (NTRS)

    Zheng, Y.; Witt, A. F.

    1999-01-01

    In the light of strong indications that a majority of critical defects formed in bismuth silicon oxide (BSO) during growth from the melt is related directly or indirectly to gravitational interference, it is suggested to use the reduced gravity environment of outer space for experimentation directed at the identification and control of these defects. The results of these experiments are expected to lead to advances in our understanding of crystal growth related defect formation in general and will establish a basis for effective defect engineering, the approach to efficient achievement of defect related, application specific properties in opto-electronic materials

  12. Bismuth film electrodes for heavy metals determination

    NASA Astrophysics Data System (ADS)

    Rehacek, Vlastimil; Hotovy, Ivan; Vojs, Marian; Mika, Fedor

    2007-05-01

    Bismuth film electrodes (BiFEs) have a potential to replace toxic mercury used most frequently for determination of heavy metals (Cd, Pb, Zn) by anodic stripping voltammetry. We prepared a graphite disc electrode (0.5 mm in diameter) from a pencil-lead rod and developed a nitrogen doped diamond-like carbon (NDLC) microelectrode array consisting of 50 625 microdiscs with 3 μm in diameter and interelectrode distances of 20 μm on a highly conductive silicon substrate as a support for BiFEs. The disc graphite BiFE was used for simultaneous determination of Pb(II), Cd(II) and Zn(II) by square wave voltammetry (SWV) in an aqueous solution. We found the optimum bismuth-to-metal concentration ratio in the solution to be 20. The dependence of the stripping responses on the concentration of target metals was linear in the range from 1×10 -8 to 1.2×10 -7 mol/L. Detection limits 2.4×10 -9 mol/L for Pb(II), 2.9×10 -9 mol/L for Cd(II) and 1.2×10 -8 mol/L for Zn(II) were estimated. A bismuth-plated NDLC microelectrode array was used for Pb(II) determination by differential pulse voltammetry (DPV) in an aqueous solution. We found that the stripping current for bismuth-plated NDLC array was linear in the concentration range of Pb(II) from 2×10 -8 to 1.2×10 -7 mol/L. The detection limit 2.2×10 -8 mol/L was estimated from a calibration plot.

  13. Resistive switching characteristics and mechanisms in silicon oxide memory devices

    NASA Astrophysics Data System (ADS)

    Chang, Yao-Feng; Fowler, Burt; Chen, Ying-Chen; Zhou, Fei; Wu, Xiaohan; Chen, Yen-Ting; Wang, Yanzhen; Xue, Fei; Lee, Jack C.

    2016-05-01

    Intrinsic unipolar SiOx-based resistance random access memories (ReRAM) characterization, switching mechanisms, and applications have been investigated. Device structures, material compositions, and electrical characteristics are identified that enable ReRAM cells with high ON/OFF ratio, low static power consumption, low switching power, and high readout-margin using complementary metal-oxide semiconductor transistor (CMOS)-compatible SiOx-based materials. These ideas are combined with the use of horizontal and vertical device structure designs, composition optimization, electrical control, and external factors to help understand resistive switching (RS) mechanisms. Measured temperature effects, pulse response, and carrier transport behaviors lead to compact models of RS mechanisms and energy band diagrams in order to aid the development of computer-aided design for ultralarge-v scale integration. This chapter presents a comprehensive investigation of SiOx-based RS characteristics and mechanisms for the post-CMOS device era.

  14. Structural silicon nitride materials containing rare earth oxides

    DOEpatents

    Andersson, Clarence A.

    1980-01-01

    A ceramic composition suitable for use as a high-temperature structural material, particularly for use in apparatus exposed to oxidizing atmospheres at temperatures of 400 to 1600.degree. C., is found within the triangular area ABCA of the Si.sub.3 N.sub.4 --SiO.sub.2 --M.sub.2 O.sub.3 ternary diagram depicted in FIG. 1. M is selected from the group of Yb, Dy, Er, Sc, and alloys having Yb, Y, Er, or Dy as one component and Sc, Al, Cr, Ti, (Mg +Zr) or (Ni+Zr) as a second component, said alloy having an effective ionic radius less than 0.89 A.

  15. Enhanced silicon oxidation on titanium-covered Si(001).

    PubMed

    Ohno, S; Shudo, K; Nakayama, F; Yamazaki, K; Ichikawa, Y; Tanaka, M; Okuda, T; Harasawa, A; Matsuda, I; Kakizaki, A

    2011-08-03

    We report on a core level photoemission study of the formation of an ultrathin SiO(x) layer grown at the interface of a titanium-covered Si(001) surface. Oxygen exposure at room temperature induces a large chemical shift of the Si 2p state, predominantly assigned to Si(4+). The results indicate that a SiO(2 - δ) layer, close to the stoichiometry of SiO(2), is formed below the TiO(x) film. The thickness of the SiO(2 - δ) layer is estimated to be ∼ 0.9 nm, corresponding to three to four oxide layers. Further chemical shift caused by annealing is attributed to the formation of titanium silicate (TiSi(x)O(y)).

  16. Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

    PubMed Central

    Rossi, Alessandro; Tanttu, Tuomo; Hudson, Fay E.; Sun, Yuxin; Möttönen, Mikko; Dzurak, Andrew S.

    2015-01-01

    As mass-produced silicon transistors have reached the nano-scale, their behavior and performances are increasingly affected, and often deteriorated, by quantum mechanical effects such as tunneling through single dopants, scattering via interface defects, and discrete trap charge states. However, progress in silicon technology has shown that these phenomena can be harnessed and exploited for a new class of quantum-based electronics. Among others, multi-layer-gated silicon metal-oxide-semiconductor (MOS) technology can be used to control single charge or spin confined in electrostatically-defined quantum dots (QD). These QD-based devices are an excellent platform for quantum computing applications and, recently, it has been demonstrated that they can also be used as single-electron pumps, which are accurate sources of quantized current for metrological purposes. Here, we discuss in detail the fabrication protocol for silicon MOS QDs which is relevant to both quantum computing and quantum metrology applications. Moreover, we describe characterization methods to test the integrity of the devices after fabrication. Finally, we give a brief description of the measurement set-up used for charge pumping experiments and show representative results of electric current quantization. PMID:26067215

  17. Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping.

    PubMed

    Rossi, Alessandro; Tanttu, Tuomo; Hudson, Fay E; Sun, Yuxin; Möttönen, Mikko; Dzurak, Andrew S

    2015-06-03

    As mass-produced silicon transistors have reached the nano-scale, their behavior and performances are increasingly affected, and often deteriorated, by quantum mechanical effects such as tunneling through single dopants, scattering via interface defects, and discrete trap charge states. However, progress in silicon technology has shown that these phenomena can be harnessed and exploited for a new class of quantum-based electronics. Among others, multi-layer-gated silicon metal-oxide-semiconductor (MOS) technology can be used to control single charge or spin confined in electrostatically-defined quantum dots (QD). These QD-based devices are an excellent platform for quantum computing applications and, recently, it has been demonstrated that they can also be used as single-electron pumps, which are accurate sources of quantized current for metrological purposes. Here, we discuss in detail the fabrication protocol for silicon MOS QDs which is relevant to both quantum computing and quantum metrology applications. Moreover, we describe characterization methods to test the integrity of the devices after fabrication. Finally, we give a brief description of the measurement set-up used for charge pumping experiments and show representative results of electric current quantization.

  18. Proposal of Trench-Oxide Metal-Oxide-Semiconductor Structure and Computer Simulation of Silicon Quantum-Wire Characteristics

    NASA Astrophysics Data System (ADS)

    Tsukui, Tetsuya; Oda, Shunri

    1993-12-01

    We propose “trench-oxide metal-oxide-semiconductor (MOS)” structures as a novel formation method of silicon-based low-dimensional quantum structures, which are considered to be basic elements of future ultrahigh-speed and ultralarge-scale integrated devices. In this method, the applied gate voltage forms the potential well confined in an additional direction defined by ultrafine “trenches” on the oxide layer of the MOS structure. We characterize “trench-oxide MOS” quantum wire structures by two-dimensional numerical calculation of the shape of the potential well, the subband energy levels and the electron density, and investigate the possibility of the experimental observation of quantized density of states peculiar to quantum wires, by measuring capacitance-gate voltage (C-V) characteristics of “trench-oxide MOS capacitors.” We also have successfully fabricated “trench-oxide MOS” quantum wires with the width of 16 nm using electron beam (EB) lithography and electron cyclotron resonance reactive ion etching (ECR-RIE).

  19. Fabricating nanostructures through a combination of nano-oxidation and wet etching on silicon wafers with different surface conditions.

    PubMed

    Huang, Jen-Ching

    2012-01-01

    This study investigates the surface conditions of silicon wafers with native oxide layers (NOL) or hydrogen passivated layers (HPL) and how they influence the processes of nano-oxidation and wet etching. We also explore the combination of nano-oxidation and wet etching processes to produce nanostructures. Experimental results reveal that the surface conditions of silicon wafers have a considerable impact on the results of nano-oxidation when combined with wet etching. The height and width of oxides on NOL samples exceeded the dimensions of oxides on HPL samples, and this difference became increasingly evident with an increase in applied bias voltage. The height of oxidized nanolines on the HPL sample increased after wet etching; however, the width of the lines increased only marginally. After wet etching, the height and width of oxides on the NOL were more than two times greater than those on the HPL. Increasing the applied bias voltage during nano-oxidation on NOL samples increased both the height and width of the oxides. After wet etching however, the increase in bias voltage appeared to have little effect on the height of oxidized nanolines, but the width of oxidized lines increased. This study also discovered that the use of higher applied bias voltages on NOL samples followed by wet etching results in nanostructures with a section profile closely resembling a curved surface. The use of this technique enabled researchers to create molds in the shape of a silicon nanolens array and an elegantly shaped nanoscale complex structures mold.

  20. The effect of thermal oxidation on the luminescence properties of nanostructured silicon.

    PubMed

    Liu, Lijia; Sham, Tsun-Kong

    2012-08-06

    Herein is reported a detailed study of the luminescence properties of nanostructured Si using X-ray excited optical luminescence (XEOL) in combination with X-ray absorption near-edge structures (XANES). P-type Si nanowires synthesized via electroless chemical etching from Si wafers of different doping levels and porous Si synthesized using electrochemical method are examined under X-ray excitation across the Si K-, L(3,2) -, and O K-edges. It is found that while as-prepared Si nanostructures are weak light emitters, intense visible luminescence is observed from thermally oxidized Si nanowires and porous Si. The luminescence mechanism of Si upon oxidation is investigated by oxidizing nanostructured Si at different temperatures. Interestingly, the two luminescence bands observed show different response with the variation of absorption coefficient upon Si and O core-electron excitation in elemental silicon and silicon oxide. A correlation between luminescence properties and electronic structures is thus established. The implications of the finding are discussed in terms of the behavior of the oxygen deficient center (OCD) and non-bridging oxygen hole center (NBOHC).

  1. Optimization of oxidation processes to improve crystalline silicon solar cell emitters

    SciTech Connect

    Shen, L.; Liang, Z. C. Liu, C. F.; Long, T. J.; Wang, D. L.

    2014-02-15

    Control of the oxidation process is one key issue in producing high-quality emitters for crystalline silicon solar cells. In this paper, the oxidation parameters of pre-oxidation time, oxygen concentration during pre-oxidation and pre-deposition and drive-in time were optimized by using orthogonal experiments. By analyzing experimental measurements of short-circuit current, open circuit voltage, series resistance and solar cell efficiency in solar cells with different sheet resistances which were produced by using different diffusion processes, we inferred that an emitter with a sheet resistance of approximately 70 Ω/□ performed best under the existing standard solar cell process. Further investigations were conducted on emitters with sheet resistances of approximately 70 Ω/□ that were obtained from different preparation processes. The results indicate that emitters with surface phosphorus concentrations between 4.96 × 10{sup 20} cm{sup −3} and 7.78 × 10{sup 20} cm{sup −3} and with junction depths between 0.46 μm and 0.55 μm possessed the best quality. With no extra processing, the final preparation of the crystalline silicon solar cell efficiency can reach 18.41%, which is an increase of 0.4%{sub abs} compared to conventional emitters with 50 Ω/□ sheet resistance.

  2. Optimization of oxidation processes to improve crystalline silicon solar cell emitters

    NASA Astrophysics Data System (ADS)

    Shen, L.; Liang, Z. C.; Liu, C. F.; Long, T. J.; Wang, D. L.

    2014-02-01

    Control of the oxidation process is one key issue in producing high-quality emitters for crystalline silicon solar cells. In this paper, the oxidation parameters of pre-oxidation time, oxygen concentration during pre-oxidation and pre-deposition and drive-in time were optimized by using orthogonal experiments. By analyzing experimental measurements of short-circuit current, open circuit voltage, series resistance and solar cell efficiency in solar cells with different sheet resistances which were produced by using different diffusion processes, we inferred that an emitter with a sheet resistance of approximately 70 Ω/□ performed best under the existing standard solar cell process. Further investigations were conducted on emitters with sheet resistances of approximately 70 Ω/□ that were obtained from different preparation processes. The results indicate that emitters with surface phosphorus concentrations between 4.96 × 1020 cm-3 and 7.78 × 1020 cm-3 and with junction depths between 0.46 μm and 0.55 μm possessed the best quality. With no extra processing, the final preparation of the crystalline silicon solar cell efficiency can reach 18.41%, which is an increase of 0.4%abs compared to conventional emitters with 50 Ω/□ sheet resistance.

  3. A novel ellipsometer for measuring thickness of oxide layer on the surface of silicon sphere

    NASA Astrophysics Data System (ADS)

    Zhang, Jitao; Li, Yan

    2008-03-01

    The Avogadro constant NA is used as one of the several possible routes to redefinition of the kilogram in metrology today. Usually in order to accurately determine NA, the volume of a perfect single crystal silicon sphere of nearly 1 kg mass should be measured with a high relative uncertainty, i.e. about 1×10 -8. However, the oxide layer grown on the surface of the silicon sphere causes a remarkable systematic difference between the measured and real diameters. A novel ellipsometer has been developed to determine the thickness of the oxide layer accurately and automatically. The arrangement of this instrument is suitable for measuring the layer on the sphere surface. What's more, the measuring is faster by optimizing the parameters and developing the algorithm of calculating the thickness and refractive index of the oxide layer. The preliminary simulation result has present. Thus, the uncertainty of the diameter measurement caused by the oxide layer can be observably reduced. And the further improving of this ellipsometer is discussed in the end.

  4. Charge-transfer interatomic potential for investigation of the thermal-oxidation growth process of silicon

    NASA Astrophysics Data System (ADS)

    Takamoto, So; Kumagai, Tomohisa; Yamasaki, Takahiro; Ohno, Takahisa; Kaneta, Chioko; Hatano, Asuka; Izumi, Satoshi

    2016-10-01

    A charge-transfer interatomic potential, based on the hybrid-Tersoff potential that incorporates a covalent-ionic mixed-bond nature, was developed to reproduce the growth process of the thermal oxidation of silicon. A fitting process was employed with various reference structures sampled by MD. Actively exploring and learning the wide-range of phase space enabled us to develop a robust interatomic potential. Our interatomic potential reproduced the bulk properties of Si and SiO2 polymorphs well, in addition to the radial distribution function and bond angle distribution of amorphous SiO2. The covalent-ionic mixed-bond nature of the interatomic potential well reproduced the dissociation process of an oxygen molecule on the Si/SiO2 interface. The initial oxidation simulation was performed on the silicon surface. We grew the amorphous SiO2 layer by incorporating the oxygen molecules into the silicon network at the interface. The density of the SiO2 layer and the charge distribution at the interface showed good agreement with the experimental data.

  5. Oxide-free hybrid silicon nanowires: From fundamentals to applied nanotechnology

    NASA Astrophysics Data System (ADS)

    Bashouti, Muhammad Y.; Sardashti, Kasra; Schmitt, Sebastian W.; Pietsch, Matthias; Ristein, Jürgen; Haick, Hossam; Christiansen, Silke H.

    2013-02-01

    The ability to control physical properties of silicon nanowires (Si NWs) by designing their surface bonds is important for their applicability in devices in the areas of nano-electronics, nano-photonics, including photovoltaics and sensing. In principle a wealth of different molecules can be attached to the bare Si NW surface atoms to create e.g. Si-O, Si-C, Si-N, etc. to mention just the most prominent ones. Si-O bond formation, i.e. oxidation usually takes place automatically as soon as Si NWs are exposed to ambient conditions and this is undesired is since a defective oxide layer (i.e. native silicon dioxide - SiO2) can cause uncontrolled trap states in the band gap of silicon. Surface functionalization of Si NW surfaces with the aim to avoid oxidation can be carried out by permitting e.g. Si-C bond formation when alkyl chains are covalently attached to the Si NW surfaces by employing a versatile two-step chlorination/alkylation process that does not affect the original length and diameter of the NWs. Termination of Si NWs with alkyl molecules through covalent Si-C bonds can provide long term stability against oxidation of the Si NW surfaces. The alkyl chain length determines the molecular coverage of Si NW surfaces and thus the surface energy and next to simple Si-C bonds even bond types such as Cdbnd C and Ctbnd C can be realized. When integrating differently functionalized Si NWs in functional devices such as field effect transistors (FETs) and solar cells, the physical properties of the resultant devices vary.

  6. Functionally Graded Bismuth Oxide/Zirconia Bilayer Electrolytes for High-Performance Intermediate-Temperature Solid Oxide Fuel Cells (IT-SOFCs).

    PubMed

    Joh, Dong Woo; Park, Jeong Hwa; Kim, Doyeub; Wachsman, Eric D; Lee, Kang Taek

    2017-03-15

    A functionally graded Bi1.6Er0.4O3 (ESB)/Y0.16Zr0.84O1.92 (YSZ) bilayer electrolyte is successfully developed via a cost-effective screen printing process using nanoscale ESB powders on the tape-cast NiO-YSZ anode support. Because of the highly enhanced oxygen incorporation process at the cathode/electrolyte interface, a novel bilayer solid oxide fuel cell (SOFC) yields extremely high power density of ∼2.1 W cm(-2) at 700 °C, which is a 2.4 times increase compared to that of the YSZ single electrolyte SOFC.

  7. Fluorinated alkyne-derived monolayers on oxide-free silicon nanowires via one-step hydrosilylation

    NASA Astrophysics Data System (ADS)

    Nguyen Minh, Quyen; Pujari, Sidharam P.; Wang, Bin; Wang, Zhanhua; Haick, Hossam; Zuilhof, Han; van Rijn, Cees J. M.

    2016-11-01

    Passivation of oxide-free silicon nanowires (Si NWs) by the formation of high-quality fluorinated 1-hexadecyne-derived monolayers with varying fluorine content has been investigated. Alkyl chain monolayers (C16H30-xFx) with a varying number of fluorine substituents (x = 0, 1, 3, 9, 17) were attached onto hydrogen-terminated silicon (Sisbnd H) surfaces with an effective one-step hydrosilylation. This surface chemistry gives well-defined monolayers on nanowires that have a cylindrical core-shell structure, as characterized by X-ray photoelectron spectroscopy (XPS), Fourier transform infrared spectroscopy (FT-IR) and static contact angle (SCA) analysis. The monolayers were stable under acidic and basic conditions, as well as under extreme conditions (such as UV exposure), and provide excellent surface passivation, which opens up applications in the fields of field effect transistors, optoelectronics and especially for disease diagnosis.

  8. Phase transitions from semiconductive amorphous to conductive polycrystalline in indium silicon oxide thin films

    NASA Astrophysics Data System (ADS)

    Mitoma, Nobuhiko; Da, Bo; Yoshikawa, Hideki; Nabatame, Toshihide; Takahashi, Makoto; Ito, Kazuhiro; Kizu, Takio; Fujiwara, Akihiko; Tsukagoshi, Kazuhito

    2016-11-01

    The enhancement in electrical conductivity and optical transparency induced by a phase transition from amorphous to polycrystalline in lightly silicon-doped indium oxide (InSiO) thin films is studied. The phase transition caused by simple thermal annealing transforms the InSiO thin films from semiconductors to conductors. Silicon atoms form SiO4 tetrahedra in InSiO, which enhances the overlap of In 5s orbitals as a result of the distortion of InO6 octahedral networks. Desorption of weakly bonded oxygen releases electrons from deep subgap states and enhances the electrical conductivity and optical transparency of the films. Optical absorption and X-ray photoelectron spectroscopy measurements reveal that the phase transition causes a Fermi energy shift of ˜0.2 eV.

  9. Determining mean thickness of the oxide layer by mapping the surface of a silicon sphere.

    PubMed

    Zhang, Jitao; Li, Yan; Wu, Xuejian; Luo, Zhiyong; Wei, Haoyun

    2010-03-29

    To determine Avogadro constant with a relative uncertainty of better than 2 x 10(-8), the mean thickness of the oxide layer grown non-uniformly on the silicon sphere should be determined with about 0.1 nm uncertainty. An effective and flexible mapping strategy is proposed, which is insensitive to the angle resolution of the sphere-rotating mechanism. In this method, a sphere-rotating mechanism is associated with spectroscopic ellipsometer to determine the distribution of the layer, and a weighted mean method based on equal-area projection theory is applied to estimate the mean thickness. The spectroscopic ellipsometer is calibrated by X-ray reflectivity method. Within 12 hours, eight hundred positions on the silicon sphere are measured twice. The mean thickness is determined to be 4.23 nm with an uncertainty of 0.13 nm, which is in the acceptable level for the Avogadro project.

  10. Electrorheological properties of polyaniline-vanadium oxide nanostructures suspended in silicone oil

    NASA Astrophysics Data System (ADS)

    Goswami, Sumita; Brehm, Tiago; Filonovich, Sergej; Cidade, Maria Teresa

    2014-10-01

    In the present work, organic/inorganic hybrid nanostructures comprised of polyaniline and vanadium oxide were synthesized via a simple hydrothermal technique. The polyaniline/vanadium oxide hybrid morphology was tailored from rods to spheres by controlling the relative concentration of the reactants. The synthesized composites were characterized by x-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR) and field emission scanning electron microscopy (FESEM) for structural and morphological analyses. Electrorheological (ER) properties of the as-prepared nanocomposites suspended in silicone oil were investigated by a rotational viscometer under both steady and dynamic shear. The ER activity of the composite material suspensions showed higher ER effects for the product with the rod-like structures than for the product with the sphere-like structures. The typical ER behaviour showed by the polyaniline-vanadium oxide nanocomposites demonstrated their potential application as an ER smart material.

  11. Oxidative stress in bacteria (Pseudomonas putida) exposed to nanostructures of silicon carbide.

    PubMed

    Borkowski, Andrzej; Szala, Mateusz; Kowalczyk, Paweł; Cłapa, Tomasz; Narożna, Dorota; Selwet, Marek

    2015-09-01

    Silicon carbide (SiC) nanostructures produced by combustion synthesis can cause oxidative stress in the bacterium Pseudomonas putida. The results of this study showed that SiC nanostructures damaged the cell membrane, which can lead to oxidative stress in living cells and to the loss of cell viability. As a reference, micrometric SiC was also used, which did not exhibit toxicity toward cells. Oxidative stress was studied by analyzing the activity of peroxidases, and the expression of the glucose-6-phosphate dehydrogenase gene (zwf1) using real-time PCR and northern blot techniques. Damage to nucleic acid was studied by isolating and hydrolyzing plasmids with the formamidopyrimidine [fapy]-DNA glycosylase (also known as 8-oxoguanine DNA glycosylase) (Fpg), which is able to detect damaged DNA. The level of viable microbial cells was investigated by propidium iodide and acridine orange staining.

  12. Fabrication and evaluation of series-triple quantum dots by thermal oxidation of silicon nanowire

    SciTech Connect

    Uchida, Takafumi Jo, Mingyu; Tsurumaki-Fukuchi, Atsushi; Arita, Masashi; Takahashi, Yasuo; Fujiwara, Akira

    2015-11-15

    Series-connected triple quantum dots were fabricated by a simple two-step oxidation technique using the pattern-dependent oxidation of a silicon nanowire and an additional oxidation of the nanowire through the gap of the fine gates attached to the nanowire. The characteristics of multi-dot single-electron devices are obtained. The formation of each quantum dot beneath an attached gate is confirmed by analyzing the electrical characteristics and by evaluating the gate capacitances between all pairings of gates and quantum dots. Because the gate electrode is automatically attached to each dot, the device structure benefits from scalability. This technique promises integrability of multiple quantum dots with individual control gates.

  13. Near-theoretical fracture strengths in native and oxidized silicon nanowires

    NASA Astrophysics Data System (ADS)

    DelRio, Frank W.; White, Ryan M.; Krylyuk, Sergiy; Davydov, Albert V.; Friedman, Lawrence H.; Cook, Robert F.

    2016-08-01

    In this letter, fracture strengths σ f of native and oxidized silicon nanowires (SiNWs) were determined via atomic force microscopy bending experiments and nonlinear finite element analysis. In the native SiNWs, σ f in the Si was comparable to the theoretical strength of Si<111>, ≈22 GPa. In the oxidized SiNWs, σ f in the SiO2 was comparable to the theoretical strength of SiO2, ≈6 to 12 GPa. The results indicate a change in the failure mechanism between native SiNWs, in which fracture originated via inter-atomic bond breaking or atomic-scale defects in the Si, and oxidized SiNWs, in which fracture initiated from surface roughness or nano-scale defects in the SiO2.

  14. Large-Area Dry Transfer of Single-Crystalline Epitaxial Bismuth Thin Films.

    PubMed

    Walker, Emily S; Na, Seung Ryul; Jung, Daehwan; March, Stephen D; Kim, Joon-Seok; Trivedi, Tanuj; Li, Wei; Tao, Li; Lee, Minjoo L; Liechti, Kenneth M; Akinwande, Deji; Bank, Seth R

    2016-11-09

    We report the first direct dry transfer of a single-crystalline thin film grown by molecular beam epitaxy. A double cantilever beam fracture technique was used to transfer epitaxial bismuth thin films grown on silicon (111) to silicon strips coated with epoxy. The transferred bismuth films retained electrical, optical, and structural properties comparable to the as-grown epitaxial films. Additionally, we isolated the bismuth thin films on freestanding flexible cured-epoxy post-transfer. The adhesion energy at the bismuth/silicon interface was measured to be ∼1 J/m(2), comparable to that of exfoliated and wet transferred graphene. This low adhesion energy and ease of transfer is unexpected for an epitaxially grown film and may enable the study of bismuth's unique electronic and spintronic properties on arbitrary substrates. Moreover, this method suggests a route to integrate other group-V epitaxial films (i.e., phosphorus) with arbitrary substrates, as well as potentially to isolate bismuthene, the atomic thin-film limit of bismuth.

  15. Composition, process, and apparatus, for removal of water and silicon mu-oxides from chlorosilanes

    DOEpatents

    Tom, Glenn M.; McManus, James V.

    1991-10-15

    A scavenger composition having utility for removal of water and silicon mu-oxide impurities from chlorosilanes, such scavenger composition comprising: (a) a support; and (b) associated with the support, one or more compound(s) selected from the group consisting of compounds of the formula: R.sub.a-x MCl.sub.x wherein: M is a metal selected from the group consisting of the monovalent metals lithium, sodium, and potassium; the divalent metals magnesium, strontium, barium, and calcium; and the trivalent metal aluminum; R is alkyl; a is a number equal to the valency of metal M; and x is a number having a value from 0 to a, inclusive; and wherein said compound(s) of the formula R.sub.a-x MCl.sub.x have been activated for impurity-removal service by a reaction scheme selected from those of the group consisting of: (i) reaction of such compound(s) with hydrogen chloride to form a first reaction product therefrom, followed by reaction of the first reaction product with a chlorosilane of the formula: SiH.sub.4"y Cl.sub.y, wherein y is a number having a value of from 1 to 3, inclusive; and (ii) reaction of such compound(s) with a chlorosilane of the formula: SiH.sub.4-y Cl.sub.y wherein y is a number having a value of 1 to 3, inclusive. A corresponding method of making the scavenger composition, and of purifying a chlorosilane which contains oxygen and silicon mu-oxide impurities, likewise are disclosed, together with a purifier apparatus, in which a bed of the scavenger composition is disposed. The composition, purification process, and purifier apparatus of the invention have utility in purifying gaseous chlorosilanes which are employed in the semiconductor industry as silicon source reagents for forming epitaxial silicon layers.

  16. Process for removal of water and silicon mu-oxides from chlorosilanes

    DOEpatents

    Tom, Glenn M.; McManus, James V.

    1992-03-10

    A scavenger composition having utility for removal of water and silicon mu-oxide impurities from chlorosilanes, such scavenger composition comprising: (a) a support; and (b) associated with the support, one or more compound(s) selected from the group consisting of compounds of the formula: R.sub.a-x MCl.sub.x wherein: M is a metal selected from the group consisting of the monovalent metals lithium, sodium, and potassium; the divalent metals magnesium, strontium, barium, and calcium; and the trivalent metal aluminum; R is alkyl; a is a number equal to the valency of metal M; and x is a number having a value of from 0 to a, inclusive; and wherein said compound(s) of the formula R.sub.a-x MCl.sub.x have been activated for impurity-removal service by a reaction scheme selected from those of the group consisting of: (i) reaction of such compound(s) with hydrogen chloride to form a first reaction product therefrom, followed by reaction of the first reaction product with a chlorosilane of the formula: SiH.sub.4-y Cl.sub.y, wherein y is a number having a value of from 1 to 3, inclusive; and (ii) reaction of such compound(s) with a chlorosilane of the formula: SiH.sub.4-y Cl.sub.y wherein y is a number having a value of 1 to 3, inclusive. A corresponding method of making the scavenger composition, and of purifying a chlorosilane which contains oxygen and silicon mu-oxide impurities, likewise are disclosed, together with a purifier apparatus, in which a bed of the scavenger composition is disposed. The composition, purification process, and purifier apparatus of the invention have utility in purifying gaseous chlorosilanes which are employed in the semiconductor industry as silicon source reagents for forming epitaxial silicon layers.

  17. Nitric oxide-generating silicone as a blood-contacting biomaterial

    PubMed Central

    Amoako, Kagya A.; Cook, Keith E.

    2011-01-01

    Coagulation upon blood-contacting biomaterials remains a problem for short and long-term clinical applications. This study examined the ability of copper(II)-doped silicone surfaces to generate nitric oxide (NO) and locally inhibit coagulation. Silicone was doped with 3-micron copper (Cu(0)) particles yielding 3 to 10 weight percent (wt%) Cu in 70-μm thick Cu/Silicone polymeric matrix composites (Cu/Si PMCs). At 3, 5, 8 and 10 wt% Cu doping, the surface expression of Cu was 12.1 ± 2.8%, 19.7 ± 5.4%, 29.0 ± 3.8%, and 33.8 ± 6.5% respectively. After oxidizing Cu(0) to Cu(II) by spontaneous corrosion, NO flux, JNO (mol*cm−2*min−1), as measured by chemiluminescence, increased with surface Cu expression according to the relationship JNO =(1.63 %SACu −0.81) ×10−11, R2 = 0.98 where %SACu is the percentage of surface occupied by Cu. NO flux at 10 wt% Cu was 5.35± 0.74 ×10−10 mol*cm−2*min−1. The clotting time of sheep blood exposed to these surfaces was 80 ± 13s with pure silicone and 339 ± 44s when 10 wt% Cu(II) was added. SEMs of coatings showed clots occurred away from exposed Cu-dendrites. In conclusion, Cu/Si PMCs inhibit coagulation in a dose-dependent fashion related to the extent of copper exposure on the coated surface. PMID:22036723

  18. Interaction of silicon-based quantum dots with gibel carp liver: oxidative and structural modifications

    NASA Astrophysics Data System (ADS)

    Stanca, Loredana; Petrache, Sorina Nicoleta; Serban, Andreea Iren; Staicu, Andrea Cristina; Sima, Cornelia; Munteanu, Maria Cristina; Zărnescu, Otilia; Dinu, Diana; Dinischiotu, Anca

    2013-05-01

    Quantum dots (QDs) interaction with living organisms is of central interest due to their various biological and medical applications. One of the most important mechanisms proposed for various silicon nanoparticle-mediated toxicity is oxidative stress. We investigated the basic processes of cellular damage by oxidative stress and tissue injury following QD accumulation in the gibel carp liver after intraperitoneal injection of a single dose of 2 mg/kg body weight Si/SiO2 QDs after 1, 3, and 7 days from their administration. QDs gradual accumulation was highlighted by fluorescence microscopy, and subsequent histological changes in the hepatic tissue were noted. After 1 and 3 days, QD-treated fish showed an increased number of macrophage clusters and fibrosis, while hepatocyte basophilia and isolated hepatolytic microlesions were observed only after substantial QDs accumulation in the liver parenchyma, at 7 days after IP injection. Induction of oxidative stress in fish liver was revealed by the formation of malondialdehyde and advanced oxidation protein products, as well as a decrease in protein thiol groups and reduced glutathione levels. The liver enzymatic antioxidant defense was modulated to maintain the redox status in response to the changes initiated by Si/SiO2 QDs. So, catalase and glutathione peroxidase activities were upregulated starting from the first day after injection, while the activity of superoxide dismutase increased only after 7 days. The oxidative damage that still occurred may impair the activity of more sensitive enzymes. A significant inhibition in glucose-6-phosphate dehydrogenase and glutathione-S-transferase activity was noted, while glutathione reductase remained unaltered. Taking into account that the reduced glutathione level had a deep decline and the level of lipid peroxidation products remained highly increased in the time interval we studied, it appears that the liver antioxidant defense of Carassius gibelio does not counteract the

  19. Oxidation of silicon nitride sintered with rare-earth oxide additions

    NASA Technical Reports Server (NTRS)

    Mieskowski, D. M.; Sanders, W. A.

    1985-01-01

    The effects of rare-earth oxide additions on the oxidation of sintered Si3N4 were examined. Insignificant oxidation occurred at 700 and 1000 C, with no evidence of phase instability. At 1370 C, the oxidation rate was lowest for Y2O3 and increased for additions of La2O3, Sm2O3, and CeO2, in that order. Data obtained from X-ray diffraction, electron microprobe analysis, and scanning electron microscopy indicate that oxidation occurs via diffusion of cationic species from Si3N4 grain boundaries.

  20. Hydrogen passivation of silicon(100) used as templates for low-temperature epitaxy and oxidation

    NASA Astrophysics Data System (ADS)

    Atluri, Vasudeva Prasad

    Epitaxial growth, oxidation and ohmic contacts require surfaces as free as possible of physical defects and chemical contaminants, especially, oxygen and hydrocarbons. Wet chemical cleaning typically involves a RCA clean to remove contaminants by stripping the native oxide and regrowing a chemical oxide with only trace levels of carbon and metallic impurities. Low temperature epitaxy, T<800sp° C, limits the thermal budget for the desorption of impurities and surface oxides, and can be performed on processed structures. But, silicon dioxide cannot be desorbed at temperatures lower than 800sp°C. Recently, hydrogen passivation of Si(111) has been reported to produce stable and ordered surfaces at low temperatures. Hydrogen can then be desorbed between 200sp°C and 600sp°C prior to deposition. In this work, Si(100) is passivated via a solution of hydrofluoric acid in alcohol (methanol, ethanol, or isopropyl alcohol) with HF concentrations between 0.5 to 10%. A rinse in water or alcohol is performed after etching to remove excess fluorine. This work investigates wet chemical cleaning of Si(100) to produce ordered, hydrogen-terminated, oxygen- and carbon-free surfaces to be used as templates for low temperature epitaxial growth and rapid thermal oxidation. Ion beam analysis, Tapping mode atomic force microscopy, Fourier transform infrared spectroscopy, Secondary ion mass spectroscopy, Chemical etching, Capacitance-voltage measurements and Ellipsometry are used to measure, at the surface and interface, impurities concentration, residual disorder, crystalline order, surface topography, roughness, chemical composition, defects density, electrical characteristics, thickness, and refractive index as a function of cleaning conditions for homoepitaxial silicon growth and oxidation. The wetting characteristics of the Si(100) surfaces are measured with a tilting plate technique. Different materials are analyzed by ion beam analysis for use as hydrogen standards in elastic

  1. Silicon improves seed germination and alleviates oxidative stress of bud seedlings in tomato under water deficit stress.

    PubMed

    Shi, Yu; Zhang, Yi; Yao, Hejin; Wu, Jiawen; Sun, Hao; Gong, Haijun

    2014-05-01

    The beneficial effects of silicon on plant growth and development under drought have been widely reported. However, little information is available on the effects of silicon on seed germination under drought. In this work, the effects of exogenous silicon (0.5 mM) on the seed germination and tolerance performance of tomato (Solanum lycopersicum L.) bud seedlings under water deficit stress simulated by 10% (w/v) polyethylene glycol (PEG-6000) were investigated in four cultivars ('Jinpengchaoguan', 'Zhongza No.9', 'Houpi L402' and 'Oubao318'). The results showed that the seed germination percentage was notably decreased in the four cultivars under water stress, and it was significantly improved by added silicon. Compared with the non-silicon treatment, silicon addition increased the activities of superoxide dismutase (SOD) and catalase (CAT), and decreased the production of superoxide anion (O2·) and hydrogen peroxide (H2O2) in the radicles of bud seedlings under water stress. Addition of silicon decreased the total phenol concentrations in radicles under water stress, which might contribute to the decrease of peroxidase (POD) activity, as observed in the in vivo and in vitro experiments. The decrease of POD activity might contribute to a less accumulation of hydroxyl radical (·OH) under water stress. Silicon addition also decreased the concentrations of malondialdehyde (MDA) in the radicles under stress, indicating decreased lipid peroxidation. These results suggest that exogenous silicon could improve seed germination and alleviate oxidative stress to bud seedling of tomato by enhancing antioxidant defense. The positive effects of silicon observed in a silicon-excluder also suggest the active involvement of silicon in biochemical processes in plants.

  2. Fabrication and temperature-dependent photoluminescence of silicon-silicon oxide core-shell nanoparticle thin film.

    PubMed

    Lin, Sheng-Wei; Chen, Dong-Hwang

    2010-04-01

    A novel Si nanocrystals embedded SiO2 thin film has been fabricated by the synthesis of Si-SiO2 core-shell (Si@SiO2) nanoparticles via the surface SiO2 coating of Si nanocrystals and the followed drop-coating on a silicon wafer. The resultant Si@SiO2 nanoparticles had a mean diameter of 30.43 +/- 2.63 nm and a mean shell thickness of 13.16 nm. They exhibited a stronger peak around 360 nm and a weaker green-yellow emission around 530 nm. The 360 nm peak could be attributed to the electron-hole recombination in the Si cores and that via the oxide-related defects originally present on the surface of oxide-passivated Si cores, while the green-yellow emission might be attributed to the transfer of the electron-hole pairs generated in the Si cores across the core-shell interface and the followed recombination in the SiO2 shells. The resultant Si@SiO2 nanoparticle thin film had a mean grain size of about 100 nm. It showed not only blue emission and green-yellow emission but also red emission which might be due to the transfer of the electron-hole pairs generated in the Si cores across the core-shell interface and the followed recombination via the Si==O double bonds at the particle surface. Because blue emission was significant relatively, both the Si@SiO2 nanoparticles and Si@SiO2 nanoparticle thin film still exhibited bright blue fluorescence under UV excitation. In addition, by investigating the temperature dependence of photoluminescence in the temperature range of 77 to 297 K, the nature of photoluminescence from the Si@SiO2 nanoparticle thin film was also clarified.

  3. THORIUM DISPERSION IN BISMUTH

    DOEpatents

    Bryner, J.S.

    1961-07-01

    The growth of thorium bismutaide particles, which are formed when thorium is suspended in liquid bismuth, is inhibited when the liquid metal suspension is being flowed through a reactor and through a heat exchanger in sequence. It involves the addition of as little as 1 part by weight of tellurium to 100 parts of thorium. This addition is sufficient to inhibit particle growth and agglomeration.

  4. Pull-test adhesion measurements of diamondlike carbon films on silicon carbide, silicon nitride, aluminum oxide, and zirconium oxide

    SciTech Connect

    Erck, R.A.; Nichols, F.A.; Dierks, J.F.

    1993-10-01

    Hydrogenated amorphous carbon films or diamondlike carbon (DLC) films were formed by ion-beam deposition of 400 eV methane (CH{sub 4}) ions on several smooth and rough ceramics, as well as on ceramics coated with a layer of Si and Ti. Adhesion was measured by the pin-pull method. Excellent adhesion was measured for smooth SiC and Si{sub 3}N{sub 4}, but adhesion of DLC to Al{sub 2}O{sub 3} and ZrO{sub 2} was negligible. The use of a Si bonding interlayer produced good adhesion to all the substrates, but a Ti layer was ineffective because bonding between the DLC film and Ti was poor. The presence of surface roughness appeared to greatly increase the measured adhesion in all cases. Bulk thermodynamic calculations are not directly applicable to bonding at the interface. If the standard enthalpy of formation for reaction between CH{sub 4} and substrate is calculated assumpting a carbide or carbon phase is produced, a relation is seen between reaction enthalpy and relative adhesion. Large positive enthalpies are associated with poor adhesion; negative or small positive enthalpies are associated with good adhesion. This relation between enthalpy and adhesion was also observed for DLC deposited on Si. Lack of adhesion to Ti was attributed to inadvertent formation of a surface oxide layer that rendered the enthalpy for reaction with CH{sub 4} strongly positive and similar in magnitude to that for Al{sub 2}O{sub 3} and ZrO{sub 2}.

  5. In situ transmission electron microscopy probing of native oxide and artificial layers on silicon nanoparticles for lithium ion batteries.

    PubMed

    He, Yang; Piper, Daniela Molina; Gu, Meng; Travis, Jonathan J; George, Steven M; Lee, Se-Hee; Genc, Arda; Pullan, Lee; Liu, Jun; Mao, Scott X; Zhang, Ji-Guang; Ban, Chunmei; Wang, Chongmin

    2014-11-25

    Surface modification of silicon nanoparticles via molecular layer deposition (MLD) has been recently proved to be an effective way for dramatically enhancing the cyclic performance in lithium ion batteries. However, the fundamental mechanism of how this thin layer of coating functions is not known, which is complicated by the inevitable presence of native oxide of several nanometers on the silicon nanoparticle. Using in situ TEM, we probed in detail the structural and chemical evolution of both uncoated and coated silicon particles upon cyclic lithiation/delithation. We discovered that upon initial lithiation, the native oxide layer converts to crystalline Li2O islands, which essentially increases the impedance on the particle, resulting in ineffective lithiation/delithiation and therefore low Coulombic efficiency. In contrast, the alucone MLD-coated particles show extremely fast, thorough, and highly reversible lithiation behaviors, which are clarified to be associated with the mechanical flexibility and fast Li(+)/e(-) conductivity of the alucone coating. Surprisingly, the alucone MLD coating process chemically changes the silicon surface, essentially removing the native oxide layer, and therefore mitigates side reactions and detrimental effects of the native oxide. This study provides a vivid picture of how the MLD coating works to enhance the Coulombic efficiency, preserves capacity, and clarifies the role of the native oxide on silicon nanoparticles during cyclic lithiation and delithiation. More broadly, this work also demonstrates that the effect of the subtle chemical modification of the surface during the coating process may be of equal importance to the coating layer itself.

  6. In-Situ Transmission Electron Microscopy Probing of Native Oxide and Artificial Layers on Silicon Nanoparticles for Lithium Ion Batteries

    SciTech Connect

    He, Yang; Piper, Daniela M.; Gu, Meng; Travis, Jonathan J.; George, Steven M.; Lee, Se-Hee; Genc, Arda; Pullan, Lee; Liu, Jun; Mao, Scott X.; Zhang, Jiguang; Ban, Chunmei; Wang, Chong M.

    2014-11-25

    Surface modification of silicon nanoparticle via molecular layer deposition (MLD) has been recently proved to be an effective way for dramatically enhancing the cyclic performance in lithium ion batteries. However, the fundamental mechanism as how this thin layer of coating function is not known, which is even complicated by the inevitable presence of native oxide of several nanometers on the silicon nanoparticle. Using in-situ TEM, we probed in detail the structural and chemical evolution of both uncoated and coated silicon particles upon cyclic lithiation/delithation. We discovered that upon initial lithiation, the native oxide layer converts to crystalline Li2O islands, which essentially increases the impedance on the particle, resulting in ineffective lithiation/delithiation, and therefore low coulombic efficiency. In contrast, the alucone MLD coated particles show extremely fast, thorough and highly reversible lithiation behaviors, which are clarified to be associated with the mechanical flexibility and fast Li+/e- conductivity of the alucone coating. Surprisingly, the alucone MLD coating process chemically changes the silicon surface, essentially removing the native oxide layer and therefore mitigates side reaction and detrimental effects of the native oxide. This study provides a vivid picture of how the MLD coating works to enhance the coulombic efficiency and preserve capacity and clarifies the role of the native oxide on silicon nanoparticles during cyclic lithiation and delithiation. More broadly, this work also demonstrated that the effect of the subtle chemical modification of the surface during the coating process may be of equal importance as the coating layer itself.

  7. An investigation of Si-SiO2 interface charges in thermally oxidated (100), (110), (111), (511) silicon

    NASA Astrophysics Data System (ADS)

    Vitkavage, Susan C.; Irene, Eugene A.; Massoud, Hisham Z.

    1990-12-01

    Trends in the electronic properties of the Si-SiO2 interface with various processing have been frequently reported. The present study focuses on silicon substrate orientation dependent trends in fixed oxide charge, Q(sub f), and interface trap charge, D(sub it), for four silicon orientations: (100), (110), (111), and (511), for oxidation temperatures in the 750 to 1100 C range, with and without hydrogen-containing post-metal anneals, and for processing within and without a cleanroom. It is found that the presence of mobile ionic charge in non-cleanroom processing and the lack of post-metal annealing can either obscure or enhance some trends. Both Q(sub f) and D(sub it) increase for decreasing oxidation temperature for all silicon orientations. The orientational ordering of the charges varies with oxidation temperature and is dominated by the silicon atom areal density at the lowest temperatures with (110) Si having the highest charge, but a change to the (111) orientation is observed at higher oxidation temperatures. This orientational charge parallels the orientational oxidation rate ordering but not the intrinsic stress. A model is proposed that considers the orientationally dominated oxidation rate, viscous relaxation, and strain accommodation across the interface as crucial processes.

  8. Oxidation behavior in reaction-bonded aluminum-silicon alloy/alumina powder compacts

    SciTech Connect

    Yokota, S.H.

    1992-12-01

    Goal of this research is to determine the feasibility of producing low-shrinkage mullite/alumina composites by applying the reaction-bonded alumina (RBAO) process to an aluminum-silicon alloy/alumina system. Mirostructural and compositional changes during heat treatment were studied by removing samples from the furnace at different steps in the heating schedule and then using optical and scanning electron microscopy, EDS and XRD to characterize the powder compacts. Results suggest that the oxidation behavior of the alloy compact is different from the model proposed for the pure Al/alumina system.

  9. Electronic detection of surface plasmon polaritons by metal-oxide-silicon capacitor

    NASA Astrophysics Data System (ADS)

    Peale, Robert E.; Smith, Evan; Smith, Christian W.; Khalilzadeh-Rezaie, Farnood; Ishigami, Masa; Nader, Nima; Vangala, Shiva; Cleary, Justin W.

    2016-09-01

    An electronic detector of surface plasmon polaritons (SPPs) is reported. SPPs optically excited on a metal surface using a prism coupler are detected by using a close-coupled metal-oxide-silicon (MOS) capacitor. Incidence-angle dependence is explained by Fresnel transmittance calculations, which also are used to investigate the dependence of photo-response on structure dimensions. Electrodynamic simulations agree with theory and experiment and additionally provide spatial intensity distributions on and off the SPP excitation resonance. Experimental dependence of the photoresponse on substrate carrier type, carrier concentration, and back-contact biasing is qualitatively explained by simple theory of MOS capacitors.

  10. Insights into electrical characteristics of silicon doped hafnium oxide ferroelectric thin films

    NASA Astrophysics Data System (ADS)

    Zhou, Dayu; Müller, J.; Xu, Jin; Knebel, S.; Bräuhaus, D.; Schröder, U.

    2012-02-01

    Silicon doped hafnium oxide thin films were recently discovered to exhibit ferroelectricity. In the present study, metal-ferroelectric-metal capacitors with Si:HfO2 thin films as ferroelectric material and TiN as electrodes have been characterized with respect to capacitance and current density as functions of temperature and applied voltage. Polarity asymmetry of the frequency dependent coercive field was explained by interfacial effects. No ferroelectric-paraelectric phase transition was observed at temperatures up to 478 K. Clear distinctions between current evolutions with or without polarization switching were correlated to the time competition between the measurement and the response of relaxation mechanisms.

  11. Chemical etching of zinc oxide for thin-film silicon solar cells.

    PubMed

    Hüpkes, Jürgen; Owen, Jorj I; Pust, Sascha E; Bunte, Eerke

    2012-01-16

    Chemical etching is widely applied to texture the surface of sputter-deposited zinc oxide for light scattering in thin-film silicon solar cells. Based on experimental findings from the literature and our own results we propose a model that explains the etching behavior of ZnO depending on the structural material properties and etching agent. All grain boundaries are prone to be etched to a certain threshold, that is defined by the deposition conditions and etching solution. Additionally, several approaches to modify the etching behavior through special preparation and etching steps are provided.

  12. Ultrasensitive food toxin biosensor using frequency based signals of silicon oxide nanoporous structure

    NASA Astrophysics Data System (ADS)

    Ghosh, H.; RoyChaudhuri, C.

    2013-06-01

    We report an electrochemically fabricated silicon oxide nanoporous structure for ultrasensitive detection of AfB1 in food by shift in peak frequency corresponding to maximum sensitivity. It has been observed that the impedance sensitivity changes from 19% to 40% (which is only twice) where as the peak frequency shifts from 500 Hz to 50 kHz, for a change in concentration from 1 fg/ml to 1 pg/ml. This has been attributed to the combined effect of the significant pore narrowing with increasing AfB1 concentration and the opposing nature of impedance change within the nanopores and the conducting substrate immediately below the nanoporous layer.

  13. Epitaxial ferromagnetic oxide thin films on silicon with atomically sharp interfaces

    SciTech Connect

    Coux, P. de; Bachelet, R.; Fontcuberta, J.; Sánchez, F.; Warot-Fonrose, B.; Skumryev, V.; Lupina, L.; Niu, G.; Schroeder, T.

    2014-07-07

    A bottleneck in the integration of functional oxides with silicon, either directly grown or using a buffer, is the usual formation of an amorphous interfacial layer. Here, we demonstrate that ferromagnetic CoFe{sub 2}O{sub 4} films can be grown epitaxially on Si(111) using a Y{sub 2}O{sub 3} buffer layer, and remarkably the Y{sub 2}O{sub 3}/Si(111) interface is stable and remains atomically sharp. CoFe{sub 2}O{sub 4} films present high crystal quality and high saturation magnetization.

  14. Influence of molybdenum silicide additions on high-temperature oxidation resistance of silicon nitride materials

    SciTech Connect

    Klemm, H.; Tangermann, K.; Schubert, C.; Hermel, W.

    1996-09-01

    The influence of additions of molybdenum disilicide (MoSi{sub 2}) on the microstructure and the mechanical properties of a silicon nitride (Si{sub 3}N{sub 4}) material, with neodymium oxide (Nd{sub 2}O{sub 3}) and aluminum nitride (AlN) as sintering aids, was studied. The composites, containing 5, 10, and 17.6 wt% MoSi{sub 2}, were fabricated by hot pressing. All materials exhibited a similar phase composition, detected by X-ray diffractometry. Up to MoSi{sub 2} additions of 10 wt%, mechanical properties such as strength, fracture toughness, or creep at 1,400 C were not affected significantly, in comparison to that of monolithic Si{sub 3}N{sub 4}. The oxidation resistance of the composites, in terms of weight gain, degraded. After 1,000 h of oxidation at 1,400 and 1,450 C in air, a greater weight gain (by a factor of approximately three) was obtained, in comparison to that of the material without MoSi{sub 2}. Nevertheless, after 1,000 h of oxidation, the degradation in strength of the composites was considerably less severe than that of the material without MoSi{sub 2}. An additional layer was formed, caused by processes at the surface of the Si{sub 3}N{sub 4} material, preventing the formation of pores, cracks, or glassy-phase-rich areas, which are common features of oxidation damage in Si{sub 3}N{sub 4} materials. This surface layer, containing Mo{sub 5}Si{sub 3} and silicon oxynitride (Si{sub 2}ON{sub 2}), was the result of reactions between MoSi{sub 2}, Si{sub 3}N{sub 4}, and the oxygen penetrating by diffusion into the material during the high-temperature treatment.

  15. The electroluminescence mechanism of Er³⁺ in different silicon oxide and silicon nitride environments

    SciTech Connect

    Rebohle, L. Wutzler, R.; Braun, M.; Helm, M.; Skorupa, W.; Berencén, Y.; Ramírez, J. M.; Garrido, B.; Hiller, D.

    2014-09-28

    Rare earth doped metal-oxide-semiconductor (MOS) structures are of great interest for Si-based light emission. However, several physical limitations make it difficult to achieve the performance of light emitters based on compound semiconductors. To address this point, in this work the electroluminescence (EL) excitation and quenching mechanism of Er-implanted MOS structures with different designs of the dielectric stack are investigated. The devices usually consist of an injection layer made of SiO₂ and an Er-implanted layer made of SiO₂, Si-rich SiO₂, silicon nitride, or Si-rich silicon nitride. All structures implanted with Er show intense EL around 1540 nm with EL power efficiencies in the order of 2 × 10⁻³ (for SiO₂:Er) or 2 × 10⁻⁴(all other matrices) for lower current densities. The EL is excited by the impact of hot electrons with an excitation cross section in the range of 0.5–1.5 × 10⁻¹⁵cm⁻². Whereas the fraction of potentially excitable Er ions in SiO₂ can reach values up to 50%, five times lower values were observed for other matrices. The decrease of the EL decay time for devices with Si-rich SiO₂ or Si nitride compared to SiO₂ as host matrix implies an increase of the number of defects adding additional non-radiative de-excitation paths for Er³⁺. For all investigated devices, EL quenching cross sections in the 10⁻²⁰ cm² range and charge-to-breakdown values in the range of 1–10 C cm⁻² were measured. For the present design with a SiO₂ acceleration layer, thickness reduction and the use of different host matrices did not improve the EL power efficiency or the operation lifetime, but strongly lowered the operation voltage needed to achieve intense EL.

  16. Silicon induced stability and mobility of indium zinc oxide based bilayer thin film transistors

    NASA Astrophysics Data System (ADS)

    Chauhan, Ram Narayan; Tiwari, Nidhi; Liu, Po-Tsun; Shieh, Han-Ping D.; Kumar, Jitendra

    2016-11-01

    Indium zinc oxide (IZO), silicon containing IZO, and IZO/IZO:Si bilayer thin films have been prepared by dual radio frequency magnetron sputtering on glass and SiO2/Si substrates for studying their chemical compositions and electrical characteristics in order to ascertain reliability for thin film transistor (TFT) applications. An attempt is therefore made here to fabricate single IZO and IZO/IZO:Si bilayer TFTs to study the effect of film thickness, silicon incorporation, and bilayer active channel on device performance and negative bias illumination stress (NBIS) stability. TFTs with increasing single active IZO layer thickness exhibit decrease in carrier mobility but steady improvement in NBIS; the best values being μFE ˜ 27.0, 22.0 cm2/Vs and ΔVth ˜ -13.00, -6.75 V for a channel thickness of 7 and 27 nm, respectively. While silicon incorporation is shown to reduce the mobility somewhat, it raises the stability markedly (ΔVth ˜ -1.20 V). Further, IZO (7 nm)/IZO:Si (27 nm) bilayer based TFTs display useful characteristics (field effect mobility, μFE = 15.3 cm2/Vs and NBIS value, ΔVth =-0.75 V) for their application in transparent electronics.

  17. ZnO transparent conductive oxide for thin film silicon solar cells

    NASA Astrophysics Data System (ADS)

    Söderström, T.; Dominé, D.; Feltrin, A.; Despeisse, M.; Meillaud, F.; Bugnon, G.; Boccard, M.; Cuony, P.; Haug, F.-J.; Faÿ, S.; Nicolay, S.; Ballif, C.

    2010-03-01

    There is general agreement that the future production of electric energy has to be renewable and sustainable in the long term. Photovoltaic (PV) is booming with more than 7GW produced in 2008 and will therefore play an important role in the future electricity supply mix. Currently, crystalline silicon (c-Si) dominates the market with a share of about 90%. Reducing the cost per watt peak and energy pay back time of PV was the major concern of the last decade and remains the main challenge today. For that, thin film silicon solar cells has a strong potential because it allies the strength of c-Si (i.e. durability, abundancy, non toxicity) together with reduced material usage, lower temperature processes and monolithic interconnection. One of the technological key points is the transparent conductive oxide (TCO) used for front contact, barrier layer or intermediate reflector. In this paper, we report on the versatility of ZnO grown by low pressure chemical vapor deposition (ZnO LP-CVD) and its application in thin film silicon solar cells. In particular, we focus on the transparency, the morphology of the textured surface and its effects on the light in-coupling for micromorph tandem cells in both the substrate (n-i-p) and superstrate (p-i-n) configurations. The stabilized efficiencies achieved in Neuchâtel are 11.2% and 9.8% for p-i-n (without ARC) and n-i-p (plastic substrate), respectively.

  18. Highly effective electronic passivation of silicon surfaces by atomic layer deposited hafnium oxide

    NASA Astrophysics Data System (ADS)

    Cui, Jie; Wan, Yimao; Cui, Yanfeng; Chen, Yifeng; Verlinden, Pierre; Cuevas, Andres

    2017-01-01

    This paper investigates the application of hafnium oxide (HfO2) thin films to crystalline silicon (c-Si) solar cells. Excellent passivation of both n- and p-type crystalline silicon surfaces has been achieved by the application of thin HfO2 films prepared by atomic layer deposition. Effective surface recombination velocities as low as 3.3 and 9.9 cm s-1 have been recorded with 15 nm thick films on n- and p-type 1 Ω cm c-Si, respectively. The surface passivation by HfO2 is activated at 350 °C by a forming gas anneal. Capacitance voltage measurement shows an interface state density of 3.6 × 1010 cm-2 eV-1 and a positive charge density of 5 × 1011 cm-2 on annealed p-type 1 Ω cm c-Si. X-ray diffraction unveils a positive correlation between surface recombination and crystallinity of the HfO2 and a dependence of the crystallinity on both annealing temperature and film thickness. In summary, HfO2 is demonstrated to be an excellent candidate for surface passivation of crystalline silicon solar cells.

  19. Effect of silicon oxidation on long-term cell selectivity of cell-patterned Au/SiO2 platforms.

    PubMed

    Veiseh, Mandana; Zhang, Miqin

    2006-02-01

    Cellular patterning on silicon platforms is the basis for development of integrated cell-based biosensing devices, for which long-term cell selectivity and biostability remain a major challenge. We report the development of a silicon-based platform in a metal-insulator format capable of producing uniform and biostable cell patterns with long-term cell selectivity. Substrates patterned with arrays of gold electrodes were surface-engineered such that the electrodes were activated with fibronectin to mediate cell attachment and the silicon oxide background was passivated with PEG to resist protein adsorption and cell adhesion. Three types of oxide surfaces, i.e., native oxide, dry thermally grown oxide, and wet thermally grown oxide, were produced to illustrate the effect of oxide state of the surface on long-term cell selectivity. Results indicated that the cell selectivity over time differed dramatically among three patterned platforms and the best cell selectivity was found on the dry oxide surface for up to 10 days. Surface analysis results suggested that this enhancement in cell selectivity may be related to the presence of additional, more active oxide states on the dry oxide surface supporting the stability of PEG films and effectively suppressing the cell adhesion. This research offers a new strategy for development of stable and uniform cell-patterned surfaces, which is versatile for immobilization of silane-based chemicals for preparation of biostable interfaces.

  20. Impact of Silicon Nanocrystal Oxidation on the Nonmetallic Growth of Carbon Nanotubes.

    PubMed

    Rocks, Conor; Mitra, Somak; Macias-Montero, Manuel; Maguire, Paul; Svrcek, Vladimir; Levchenko, Igor; Ostrikov, Kostya; Mariotti, Davide

    2016-07-27

    Carbon nanotube (CNT) growth has been demonstrated recently using a number of nonmetallic semiconducting and metal oxide nanoparticles, opening up pathways for direct CNT synthesis from a number of more desirable templates without the need for metallic catalysts. However, CNT growth mechanisms using these nonconventional catalysts has been shown to largely differ and reamins a challenging synthesis route. In this contribution we show CNT growth from partially oxidized silicon nanocrystals (Si NCs) that exhibit quantum confinement effects using a microwave plasma enhanced chemical vapor deposition (PECVD) method. On the basis of solvent and a postsynthesis frgamentation process, we show that oxidation of our Si NCs can be easily controlled. We determine experimentally and explain with theoretical simulations that the Si NCs morphology together with a necessary shell oxide of ∼1 nm is vital to allow for the nonmetallic growth of CNTs. On the basis of chemical analysis post-CNT-growth, we give insight into possible mechanisms for CNT nucleation and growth from our partially oxidized Si NCs. This contribution is of significant importance to the improvement of nonmetallic catalysts for CNT growth and the development of Si NC/CNT interfaces.

  1. CO oxidation catalyzed by silicon carbide (SiC) monolayer: A theoretical study.

    PubMed

    Wang, Nan; Tian, Yu; Zhao, Jingxiang; Jin, Peng

    2016-05-01

    Developing metal-free catalysts for CO oxidation has been a key scientific issue in solving the growing environmental problems caused by CO emission. In this work, the potential of the silicon carbide (SiC) monolayer as a metal-free catalyst for CO oxidation was systematically explored by means of density functional theory (DFT) computations. Our results revealed that CO oxidation reaction can easily proceed on SiC nanosheet, and a three-step mechanism was proposed: (1) the coadsorption of CO and O2 molecules, followed by (2) the formation of the first CO2 molecule, and (3) the recovery of catalyst by a second CO molecule. The last step is the rate-determining one of the whole catalytic reaction with the highest barrier of 0.65eV. Remarkably, larger curvature is found to have a negative effect on the catalytic performance of SiC nanosheet for CO oxidation. Therefore, our results suggested that flat SiC monolayer is a promising metal-free catalyst for CO oxidation.

  2. Amorphous silicon-indium-zinc oxide semiconductor thin film transistors processed below 150 °C

    NASA Astrophysics Data System (ADS)

    Chong, Eugene; Chun, Yoon Soo; Lee, Sang Yeol

    2010-09-01

    Amorphous silicon-indium-zinc-oxide (a-SIZO) thin film transistor (TFT) was investigated with the process temperature below 150 °C. The a-SIZO TFT exhibited a field effect mobility of 21.6 cm2/V s and an on/off ratio of 107. The stabilities of a-SIZO TFT and indium-zinc-oxide (IZO) TFT were compared, and a-SIZO TFT showed 3.7 V shift for threshold voltage (Vth) compared to 10.8 V shift in IZO TFT after bias temperature stress. Si incorporation into IZO-system as a stabilizer, which was confirmed by x-ray photoelectron spectroscopy, resulted in small shift in Vth in a-SIZO TFT without deteriorating mobility of higher than 21.6 cm2/V s.

  3. Quantitative copper measurement in oxidized p-type silicon wafers using microwave photoconductivity decay

    NASA Astrophysics Data System (ADS)

    Väinölä, H.; Saarnilehto, E.; Yli-Koski, M.; Haarahiltunen, A.; Sinkkonen, J.; Berenyi, G.; Pavelka, T.

    2005-07-01

    We propose a method to measure trace copper contamination in p-type silicon using the microwave photoconductivity decay (μ-PCD) technique. The method is based on the precipitation of interstitial copper, activated by high-intensity light, which results in enhanced minority carrier recombination activity. We show that there is a quantitative correlation between the enhanced recombination rate and the Cu concentration by comparing μ-PCD measurements with transient ion drift and total reflection x-ray fluorescence measurements. The results indicate that the method is capable of measuring Cu concentrations down to 1010cm-3. There are no limitations to wafer storage time if corona charge is used on the oxidized wafer surfaces as the charge prevents copper outdiffusion. We briefly discuss the role of oxide precipitates both in the copper precipitation and in the charge carrier recombination processes.

  4. Selective growth of α-sexithiophene by using silicon oxides patterns.

    PubMed

    Albonetti, Cristiano; Barbalinardo, Marianna; Milita, Silvia; Cavallini, Massimiliano; Liscio, Fabiola; Moulin, Jean-François; Biscarini, Fabio

    2011-01-01

    A process for fabricating ordered organic films on large area is presented. The process allows growing sexithiophene ultra-thin films at precise locations on patterned Si/SiO(x) substrates by driving the orientation of growth. This process combines the parallel local anodic oxidation of Si/SiO(x) substrates with the selective arrangement of molecular ultra-thin film. The former is used to fabricate silicon oxide arrays of parallel lines of 400 nm in width over an area of 1 cm(2). Selective growth arises from the interplay between kinetic growth parameters and preferential interactions with the patterned surface. The result is an ultra-thin film of organic molecules that is conformal to the features of the fabricated motives.

  5. Charge separation technique for metal-oxide-silicon capacitors in the presence of hydrogen deactivated dopants

    SciTech Connect

    Witczak, Steven C.; Winokur, Peter S.; Lacoe, Ronald C.; Mayer, Donald C.

    2000-06-01

    An improved charge separation technique for metal-oxide-silicon (MOS) capacitors is presented which accounts for the deactivation of substrate dopants by hydrogen at elevated irradiation temperatures or small irradiation biases. Using high-frequency capacitance-voltage measurements, radiation-induced inversion voltage shifts are separated into components due to oxide trapped charge, interface traps, and deactivated dopants, where the latter is computed from a reduction in Si capacitance. In the limit of no radiation-induced dopant deactivation, this approach reduces to the standard midgap charge separation technique used widely for the analysis of room-temperature irradiations. The technique is demonstrated on a p-type MOS capacitor irradiated with {sup 60}Co {gamma} rays at 100 degree sign C and zero bias, where the dopant deactivation is significant.(c) 2000 American Institute of Physics.

  6. Low temperature growth of crystalline magnesium oxide on hexagonal silicon carbide (0001) by molecular beam epitaxy

    SciTech Connect

    Goodrich, T. L.; Parisi, J.; Cai, Z.; Ziemer, K. S.

    2007-01-22

    Magnesium oxide (111) was grown epitaxially on hexagonal silicon carbide (6H-SiC) (0001) substrates at low temperatures by molecular beam epitaxy and a remote oxygen plasma source. The films were characterized by reflection high-energy electron diffraction, Auger electron spectroscopy, x-ray photoelectron spectroscopy, and atomic force microscopy. Crystal structure, morphology, and growth rate of the magnesium oxide (MgO) films were found to be dependent on the magnesium flux, indicating a magnesium adsorption controlled growth mechanism. The single crystalline MgO thin films had an epitaxial relationship where MgO (111) parallel 6H-SiC (0001) and were stable in both air and 10{sup -9} Torr up to 1023 K.

  7. Tribology study of reduced graphene oxide sheets on silicon substrate synthesized via covalent assembly.

    PubMed

    Ou, Junfei; Wang, Jinqing; Liu, Sheng; Mu, Bo; Ren, Junfang; Wang, Honggang; Yang, Shengrong

    2010-10-19

    Reduced graphene oxide (RGO) sheets were covalently assembled onto silicon wafers via a multistep route based on the chemical adsorption and thermal reduction of graphene oxide (GO). The formation and microstructure of RGO were analyzed by X-ray photoelectron spectroscopy (XPS), attenuated total reflectance Fourier transform infrared (ATR-FTIR) spectroscopy, Raman spectroscopy, and water contact angle (WCA) measurements. Characterization by atomic force microscopy (AFM) was performed to evaluate the morphology and microtribological behaviors of the samples. Macrotribological performance was tested on a ball-on-plate tribometer. Results show that the assembled RGO possesses good friction reduction and antiwear ability, properties ascribed to its intrinsic structure, that is, the covalent bonding to the substrate and self-lubricating property of RGO.

  8. Thermal chemistry of copper acetamidinate atomic layer deposition precursors on silicon oxide surfaces studied by XPS

    SciTech Connect

    Yao, Yunxi; Zaera, Francisco

    2016-01-15

    The thermal surface chemistry of copper(I)-N,N′-di-sec-butylacetamidinate, [Cu({sup s}Bu-amd)]{sub 2}, a metalorganic complex recently proposed for the chemical-based deposition of copper films, has been characterized on SiO{sub 2} films under ultrahigh vacuum conditions by x-ray photoelectron spectroscopy (XPS). Initial adsorption at cryogenic temperatures results in the oxidation of the copper centers with Cu 2p{sub 3/2} XPS binding energies close to those seen for a +2 oxidation state, an observation that the authors interpret as the result of the additional coordination of oxygen atoms from the surface to the Cu atoms of the molecular acetamidinate dimer. Either heating to 300 K or dosing the precursor directly at that temperature leads to the loss of one of its two ligands, presumably via hydrogenation/protonation with a hydrogen/proton from a silanol group, or following a similar reaction on a defect site. By approximately 500 K the Cu 2p{sub 3/2}, C 1s, and N 1s XPS data suggest that the remaining acetamidinate ligand is displaced from the copper center and bonds to the silicon oxide directly, after which temperatures above 900 K need to be reached to promote further (and only partial) decomposition of those organic moieties. It was also shown that the uptake of the Cu precursor is self-limiting at either 300 or 500 K, although the initial chemistry is somewhat different at the two temperatures, and that the nature of the substrate also defines reactivity, with the thin native silicon oxide layer always present on Si(100) surfaces being less reactive than thicker films grown by evaporation, presumably because of the lower density of surface nucleation sites.

  9. Modification of Shape Memory Polymer Foams Using Tungsten, Aluminum Oxide, and Silicon Dioxide Nanoparticles.

    PubMed

    Hasan, S M; Thompson, R S; Emery, H; Nathan, A L; Weems, A C; Zhou, F; Monroe, M B B; Maitland, D J

    Shape memory polymer (SMP) foams were synthesized with three different nanoparticles (tungsten, silicon dioxide, and aluminum oxide) for embolization of cerebral aneurysms. Ultra-low density SMP foams have previously been utilized for aneurysm occlusion, resulting in a rapid, stable thrombus. However, the small cross section of foam struts can potentially lead to fracture and particulate generation, which would be a serious adverse event for an embolic device. The goal of this study was to improve the mechanical properties of the system by physically incorporating fillers into the SMP matrix. Thermal and mechanical characterization suggested minimal changes in thermal transition of the SMP nanocomposites and improved mechanical strength and toughness for systems with low filler content. Actuation profiles of the three polymer systems were tuned with filler type and content, resulting in faster SMP foam actuation for nanocomposites containing higher filler content. Additionally, thermal stability of the SMP nanocomposites improved with increasing filler concentration, and particulate count remained well below accepted standard limits for all systems. Extraction studies demonstrated little release of silicon dioxide and aluminum oxide from the bulk over 16 days. Tungstun release increased over the 16 day examination period, with a maximum measured concentration of approxiately 2.87 μg/mL. The SMP nanocomposites developed through this research have the potential for use in medical devices due to their tailorable mechanical properties, thermal resisitivity, and actuation profiles.

  10. Carrier Selective, Passivated Contacts for High Efficiency Silicon Solar Cells based on Transparent Conducting Oxides

    DOE PAGES

    Young, David L.; Nemeth, William; Grover, Sachit; ...

    2014-01-01

    We describe the design, fabrication and results of passivated contacts to n-type silicon utilizing thin SiO2 and transparent conducting oxide layers. High temperature silicon dioxide is grown on both surfaces of an n-type wafer to a thickness <50 Å, followed by deposition of tin-doped indium oxide (ITO) and a patterned metal contacting layer. As deposited, the thin-film stack has a very high J0,contact, and a non-ohmic, high contact resistance. However, after a forming gas anneal, the passivation quality and the contact resistivity improve significantly. The contacts are characterized by measuring the recombination parameter of the contact (J0,contact) and the specificmore » contact resistivity (ρcontact) using a TLM pattern. The best ITO/SiO2 passivated contact in this study has J0,contact = 92.5 fA/cm2 and ρcontact = 11.5 mOhm-cm2. These values are placed in context with other passivating contacts using an analysis that determines the ultimate efficiency and the optimal area fraction for contacts for a given set of (J0,contact, ρcontact) values. The ITO/SiO2 contacts are found to have a higher J0,contact, but a similar ρcontact compared to the best reported passivated contacts.« less

  11. Silicon nanowire arrays-induced graphene oxide reduction under UV irradiation.

    PubMed

    Fellahi, Ouarda; Das, Manash R; Coffinier, Yannick; Szunerits, Sabine; Hadjersi, Toufik; Maamache, Mustapha; Boukherroub, Rabah

    2011-11-01

    This paper reports on efficient UV irradiation-induced reduction of exfoliated graphene oxide. Direct illumination of an aqueous solution of graphene oxide at λ = 312 nm for 6 h resulted in the formation of graphene nanosheets dispersible in water. X-Ray photoelectron spectroscopy (XPS), UV-vis spectroscopy, atomic force microscopy (AFM) and electrochemical measurements (cyclic voltammetry and electrochemical impedance spectroscopy) suggest a restoration of the sp(2) carbon network. The results were compared with graphene nanosheets prepared by photochemical irradiation of a GO aqueous solution in the presence of hydrogenated silicon nanowire (SiNW) arrays or silicon nanowire arrays decorated with silver (SiNW/Ag NPs) or copper nanoparticles (SiNW/Cu NPs). Graphene nanosheets obtained by illumination of the GO aqueous solution at 312 nm for 6 h in the presence of SiNW/Cu NPs exhibited superior electrochemical charge transfer characteristics. This is mainly due to the higher amount of sp(2)-hybridized carbon in these graphene sheets found by XPS analysis. The high level of extended conjugated carbon network was also evident by the water insoluble nature of the resulting graphene nanosheets, which precipitated upon photochemical reduction.

  12. Infrared characterization of biotinylated silicon oxide surfaces, surface stability, and specific attachment of streptavidin.

    PubMed

    Lapin, Norman A; Chabal, Yves J

    2009-06-25

    Biotinylation of silicon oxide surfaces, surface stability, and evolution of these functionalized surfaces under biospecific attachment of streptavidin were studied using Fourier transform infrared spectroscopy. Adsorption and stability of species or changes in the resulting surfaces were monitored after each step of the attachment processes. The silicon oxide surface was initially derivatized by 3-aminopropyltriethoxysilane, and the quality of the 3-aminopropylsiloxane (APS) surface was monitored using the Si-O-Si and Si-O-C region of its vibrational spectrum. A strong correlation between surface quality and presilanization atmospheric moisture content was established. The vibrational fingerprint of biotinylation was determined, both for physisorption and chemisorption to the surface. A new band (i.e., not previously associated with biotin) at approximately 1250 cm(-1) was identified as a vibrational mode of the biotin ureido group, making it possible to track changes in the biotinylated surface in the presence of streptavidin. Some of the biotin ureido at the surface was found to be affected by the protein adsorption and rinse steps while remaining chemisorbed to the surface. The stability of the APS was found to impact the behavior of the biotinylated surface (measured using the Si-O-Si/Si-O-C and approximately 1250 cm(-1) absorption bands, respectively).

  13. Assessment of oxidative stress and chromosomal aberration inducing potential of three medical grade silicone polymer materials.

    PubMed

    Vijayalakshmi, P; Geetha, C S; Mohanan, P V

    2013-02-01

    Medical expenditures for devices are increasing along with the ageing of human population and the synthesis of materials such as silicone polymers is on upsurge for manufacturing these devices. The International Organization for Standardization (ISO) emphasizes a battery of tests for preclinical assessment of biocompatibility of medical devices. Genotoxicity assays have become an integral component of these test procedures and it employs a set of in vitro and in vivo experiments to detect mutagens. Hence, this study was performed with an intention to investigate the genotoxic potential of the physiological saline extracts of three medical grade silicone polymer materials by the in vitro chromosomal aberration assay using human peripheral blood lymphocytes. Further, the oxidative stress inducing potential of the material extracts was investigated in vivo in mice liver homogenates using cyclophosphamide as positive control. The investigation revealed that none of the three materials were able to produce marked human lymphocyte chromosomal aberration, suggesting the absence of mutagens. The materials also showed negative results in their oxidative stress inducing potential, which was revealed by the normal levels of lipid peroxidation and unaltered levels of glutathione and its metabolizing enzymes in the mice liver tissue homogenates. It was interesting to observe a significant correlation between the genotoxic and antioxidant parameters investigated. Hence, it is suggested that the estimation of antioxidant status would serve as a better preliminary testing procedure prior to evaluating the genetic and molecular toxicity mechanisms of medical devices and/or materials intended for manufacture of such devices.

  14. Silicon carbide: A unique platform for metal-oxide-semiconductor physics

    NASA Astrophysics Data System (ADS)

    Liu, Gang; Tuttle, Blair R.; Dhar, Sarit

    2015-06-01

    A sustainable energy future requires power electronics that can enable significantly higher efficiencies in the generation, distribution, and usage of electrical energy. Silicon carbide (4H-SiC) is one of the most technologically advanced wide bandgap semiconductor that can outperform conventional silicon in terms of power handling, maximum operating temperature, and power conversion efficiency in power modules. While SiC Schottky diode is a mature technology, SiC power Metal Oxide Semiconductor Field Effect Transistors are relatively novel and there is large room for performance improvement. Specifically, major initiatives are under way to improve the inversion channel mobility and gate oxide stability in order to further reduce the on-resistance and enhance the gate reliability. Both problems relate to the defects near the SiO2/SiC interface, which have been the focus of intensive studies for more than a decade. Here we review research on the SiC MOS physics and technology, including its brief history, the state-of-art, and the latest progress in this field. We focus on the two main scientific problems, namely, low channel mobility and bias temperature instability. The possible mechanisms behind these issues are discussed at the device physics level as well as the atomic scale, with the support of published physical analysis and theoretical studies results. Some of the most exciting recent progress in interface engineering for improving the channel mobility and fundamental understanding of channel transport is reviewed.

  15. Study of the relative performance of silicon and germanium nanoparticles embedded gate oxide in metal-oxide-semiconductor memory devices

    NASA Astrophysics Data System (ADS)

    Chakraborty, G.; Sengupta, A.; Requejo, F. G.; Sarkar, C. K.

    2011-03-01

    In the present work, we have investigated a comparative performance of the silicon (Si) and germanium (Ge) nanoparticles embedded SiO2 floating gate MOS memory devices. In such devices for low applied fields, the tunneling current is dominated by the direct tunneling mechanism, whereas for higher electric fields, the Fowler-Nordheim tunneling mechanism dominates. As the device dimensions get smaller, problem arises in the conventional MOS memory devices due to the leakage through the thin tunnel oxide. This leakage can be reduced via charge trapping by embedding nanoparticles in the gate dielectric of such devices. Here one objective is to prevent the leakage due to the direct tunneling mechanism and the other objective is to reduce the write voltage, by lowering the onset voltage of the Fowler-Nordheim tunneling mechanism. Our simulations for the current voltage characteristics covered both the low and the high applied field regions. Simulations showed that both the Si and the Ge nanoparticles embedded gate dielectrics offer reduction of the leakage current and a significant lowering of the writing or programming onset voltage, compared to the pure SiO2 gate dielectric. In terms of the comparative performance, the Germanium nanoparticles embedded gate dielectric showed better results compared to the silicon nanoparticles embedded one. The results of the simulations are discussed in the light of recent experimental results.

  16. ADSORPTION-BISMUTH PHOSPHATE METHOD FOR SEPARATING PLUTONIUM

    DOEpatents

    Russell, E.R.; Adamson, A.W.; Boyd, G.E.

    1960-06-28

    A process is given for separating plutonium from uranium and fission products. Plutonium and uranium are adsorbed by a cation exchange resin, plutonium is eluted from the adsorbent, and then, after oxidation to the hexavalent state, the plutonium is contacted with a bismuth phosphate carrier precipitate.

  17. Bismuth ochers from San Diego Co., California

    USGS Publications Warehouse

    Schaller, W.T.

    1911-01-01

    The chief points brought out in this paper may be briefly summarized as follows: (1) The existence of natural Bi2O3 has not been established. (2) Natural bismite or bismuth ocher, when pure, is more probably a bismuth hydroxide. (3) The bismuth ochers from San Diego County, California, are either a bismuth hydroxide or bismuth vanadate, pucherite, or mixtures of these two. (4) Pucherite has been found noncrystallin and determined for the first time in the United States.

  18. Physical and Optical Polarizability and Transport Properties of Bismuthate Glasses

    NASA Astrophysics Data System (ADS)

    Bale, Shashidhar; Rahman, Syed

    Bismuth-based glasses containing ZnO, B2O3 and Li2O are investigated through different physical, polarizability and transport properties. Raman spectroscopy reveals that these glasses are built from [BiO3] and [BiO6] units. Zinc in tetrahedral form is also observed. Density and glass transition temperature increase with the bismuth content. The refractive index, oxide ion polarizability and optical basicity also increase with the Bi2O3 content, whereas the interaction parameter decreases. The DC electrical conductivity increases and the activation energy decreases with the increase in the Li2O content.

  19. Adsorption of Silica on Synthetic Iron Oxides Fractionates Stable Silicon Isotopes

    NASA Astrophysics Data System (ADS)

    Delstanche, S.; Opfergelt, S.; Cardinal, D.; André, L.; Delvaux, B.

    2006-12-01

    Recent advances show that the quantification of silicon isotopic fractionation by biotic and abiotic processes readily contributes to the understanding of the continental cycle of silicon, involving a.o. Si transfers between aqueous solutions, living organisms and soil minerals. Si uptake by biota, silicate weathering and clay formation all fractionate Si isotopes. Yet, silica may also be quantitatively retrieved from aqueous solutions through specific adsorption of uncharged monosilicic acid (H4SiO4) on oxide surfaces. Iron oxides are ubiquitous in sediments, weathered rocks and soils, where they appear as crystalline and/or short-range ordered (sro) minerals. Here, we report on silicon mass fractionation by H4SiO4 adsorption on two iron oxides: goethite and ferrihydrite. The respective crystalline and sro oxides were synthesized silicon-free and characterized through elementary analysis, selective dissolution, X-ray diffraction and Transmission Electronic Microscopy (TEM). The surface area, as determined by ethylene glycol monoethyl ether (EGME), is 147 m2.g-1 for goethite and 338 m2.g-1 for ferrihydrite. The adsorption of H4SiO4 was measured in batch experiment series designed as function of time (0-504 h) and initial Si concentration in solution (0.2-1.8 mM), at 20°C, constant pH (5.5) and ionic force. The solid:solution ratio was 5g:1000ml. After equilibration, isotopic compositions of 20 selected solution samples were measured on a Nu Plasma Multicollector Mass Spectrometer (MC-ICP-MS) operating in dry plasma mode with external Mg doping. The results were expressed as δ^{29}Si relatively to the NBS28- standard, with an average precision of ± 0.08‰ (± 2σM). With respect to oxide mass but not to EGME-surface area, ferrihydrite (74%) adsorbed more Si than goethite (46%) relatively to initial Si input (at 1.1 mM Si initial concentration after 504 h of contact). Measured against its initial composition (0.00 ± 0.09‰), the equilibrium solution was

  20. Ultrasmooth reaction-sintered silicon carbide surface resulting from combination of thermal oxidation and ceria slurry polishing.

    PubMed

    Shen, Xinmin; Dai, Yifan; Deng, Hui; Guan, Chaoliang; Yamamura, Kazuya

    2013-06-17

    An ultrasmooth reaction-sintered silicon carbide surface with an rms roughness of 0.424 nm is obtained after thermal oxidation for 30 min followed by ceria slurry polishing for 30 min. By SEM-EDX analysis, we investigated the thermal oxidation behavior of RS-SiC, in which the main components are Si and SiC. As the oxidation rate is higher in the area with defects, there are no scratches or cracks on the surface after oxidation. However, a bumpy structure is formed after oxidation because the oxidation rates of Si and SiC differ. Through a theoretical analysis of thermal oxidation using the Deal-Grove model and the removal of the oxide layer by ceria slurry polishing in accordance with the Preston equation, a model for obtaining an ultrasmooth surface is proposed and the optimal processing conditions are presented.

  1. Optical and structural characterization of thermal oxidation effects of erbium thin films deposited by electron beam on silicon

    SciTech Connect

    Kamineni, Himani S.; Kamineni, Vimal K.; Moore, Richard L.; Gallis, Spyros; Diebold, Alain C.; Huang Mengbing; Kaloyeros, Alain E.

    2012-01-01

    Thermal oxidation effects on the structural, compositional, and optical properties of erbium films deposited on silicon via electron beam evaporation were analyzed by x-ray diffraction, x-ray photoelectron spectroscopy, Auger electron spectroscopy, and spectroscopic ellipsometry. A gradual rise in oxidation temperature from 700 to 900 deg. C resulted in a transition from ErO- to Er{sub 2}O{sub 3}-rich phase. Additional increase in oxidation temperature above 1000 deg. C led to the formation of erbium silicate due to further oxygen incorporation, as well as silicon out-diffusion from the substrate. A silicon oxide interfacial layer was also detected, with its thickness increasing with higher oxidation temperature. Additionally, film refractive index decreased, while its Tauc bandgap value increased from {approx}5.2 eV to {approx}6.4 eV, as the oxidation temperature was raised from 700 deg. C to above 900 deg. C. These transformations were accompanied by the appearance of an intense and broad absorption band below the optical gap. Thermal oxidation effects are discussed in the context of film structural characteristics and defect states.

  2. Facile synthesis of binder-free reduced graphene oxide/silicon anode for high-performance lithium ion batteries

    NASA Astrophysics Data System (ADS)

    Zhang, Wei; Zuo, Pengjian; Chen, Cheng; Ma, Yulin; Cheng, Xinqun; Du, Chunyu; Gao, Yunzhi; Yin, Geping

    2016-04-01

    A novel binder-free reduced graphene oxide/silicon (RGO/Si) composite anode has been fabricated by a facile doctor-blade coating method. The relatively low C/O ratio plays an important role for the fabrication of the bind-free multilayered RGO/Si electrode with silicon nanoparticles encapsulating among the RGO sheet layers. The RGO provides the electron transport pathway and prevents the electrode fracture caused by the volume changes of active silicon particles during cycling. The RGO/Si composite anode with a silicon content of 66.7% delivers a reversible capacity of 1931 mAh g-1 at 0.2 A g-1 and still remains 92% of the initial capacity after 50 cycles.

  3. High performance multilayered nano-crystalline silicon/silicon-oxide light-emitting diodes on glass substrates

    NASA Astrophysics Data System (ADS)

    Darbari, S.; Shahmohammadi, M.; Mortazavi, M.; Mohajerzadeh, S.; Abdi, Y.; Robertson, M.; Morrison, T.

    2011-09-01

    A low-temperature hydrogenation-assisted sequential deposition and crystallization technique is reported for the preparation of nano-scale silicon quantum dots suitable for light-emitting applications. Radio-frequency plasma-enhanced deposition was used to realize multiple layers of nano-crystalline silicon while reactive ion etching was employed to create nano-scale features. The physical characteristics of the films prepared using different plasma conditions were investigated using scanning electron microscopy, transmission electron microscopy, room temperature photoluminescence and infrared spectroscopy. The formation of multilayered structures improved the photon-emission properties as observed by photoluminescence and a thin layer of silicon oxy-nitride was then used for electrical isolation between adjacent silicon layers. The preparation of light-emitting diodes directly on glass substrates has been demonstrated and the electroluminescence spectrum has been measured.

  4. Design, microstructure, and high-temperature behavior of silicon nitride sintered with rate-earth oxides

    SciTech Connect

    Ciniculk, M.K. . Dept. of Materials Science and Mineral Engineering)

    1991-08-01

    The processing-microstructure-property relations of silicon nitride ceramics sintered with rare-earth oxide additives have been investigated with the aim of improving their high-temperature behavior. The additions of the oxides of Y, Sm, Gd, Dy, Er, or Yb were compositionally controlled to tailor the intergranular phase. The resulting microstructure consisted of {beta}-Si{sub 3}N{sub 4} grains and a crystalline secondary phase of RE{sub 2}Si{sub 2}O{sub 7}, with a thin residual amorphous phase present at grain boundaries. The lanthanide oxides were found to be as effective as Y{sub 2}O{sub 3} in densifying Si{sub 3}N{sub 4}, resulting in identical microstructures. The crystallization behavior of all six disilicates was similar, characterized by a limited nucleation and rapid growth mechanism resulting in large single crystals. Complete crystallization of the intergranular phase was obtained with the exception of a residual amorphous, observed at interfaces and believed to be rich in impurities, the cause of incomplete devitrification. The low resistance to oxidation of these materials was attributed to the minimization of amorphous phases via devitrification to disilicates, compatible with SiO{sub 2}, the oxidation product of Si{sub 3}N{sub 4}. The strength retention of these materials at 1300{degrees}C was found to be between 80% and 91% of room-temperature strength, due to crystallization of the secondary phase and a residual but refractory amorphous grain-boundary phase. The creep behavior was found to be strongly dependent on residual amorphous phase viscosity as well as on the oxidation behavior, as evidenced by the nonsteady-state creep rates of all materials. 122 refs., 51 figs., 12 tabs.

  5. Fabrication, strength and oxidation of molybdenum-silicon-boron alloys from reaction synthesis

    NASA Astrophysics Data System (ADS)

    Middlemas, Michael Robert

    Mo-Si-B alloys are a leading candidate for the next generation of jet turbine engine blades and have the potential to raise the operating temperatures by 300-400°C, which would dramatically increase power and efficiency. The alloys of interest are a three-phase mixture of the molybdenum solid solution (Moss) and two intermetallic phases, Mo3Si (A15) and Mo5SiB2 (T2). A novel powder metallurgical method was developed which uses the reaction of molybdenum, silicon nitride (Si3N4) and boron nitride (BN) powders to synthesize a fine dispersion of the intermetallic phases in a Moss matrix. The covalent nitrides are stable in oxidizing environments up to 1000ºC, allowing for fine particle processing without the formation of silicon and boron oxides. The process developed uses standard powder processing techniques to create Mo-Si-B alloys in a less complex and expensive manner than previously demonstrated. The formation of the intermetallic phases was examined by thermo-gravimetric analysis and x-ray diffraction. The start of the reactions to form the T2 and A15 phases were observed at 1140°C and 1193°C and the reactions have been demonstrated to be complete in as little as two hours at 1300°C. This powder metallurgy approach yields a fine dispersion of intermetallics in the Moss matrix, with average grain sizes of 2-4mum. Densities up to 95% of theoretical were attained from pressureless sintering at 1600°C and full theoretical density was achieved by hot-isostatic pressing (HIP). Low temperature sintering and HIPing was attempted to limit grain growth and to reduce the equilibrium silicon concentration in the Moss matrix. Sintering and HIPing at 1300°C reduced the grain sizes of all three phases by over a factor of two. Powder metallurgy provides an opportunity for microstructure control through changes in raw materials and processing parameters. Microstructure examination by electron back-scatter diffraction (EBSD) imaging was used to precisely define the

  6. Bismuth accumulates in the body during treatment with tripotassium dicitrato bismuthate.

    PubMed

    Gavey, C J; Szeto, M L; Nwokolo, C U; Sercombe, J; Pounder, R E

    1989-02-01

    Bismuth concentration was measured in plasma, dried leucocytes and urine in nine patients before, during and after treatment with tripotassium dicitrato bismuthate (De-Noltab 2 b.d.) for 6 weeks. During treatment there was an 8.5-fold rise in median plasma bismuth concentration (P less than 0.01), a non-significant doubling of leucocyte bismuth content, and a 349-fold rise in 24-h urinary bismuth excretion (P less than 0.01). The significantly increased urinary bismuth excretion continued for at least 3 months after cessation of treatment with tripotassium dicitrato bismuthate, indicating accumulation of bismuth during treatment with this drug.

  7. Mixed Ti-O-Si oxide films formation by oxidation of titanium-silicon interfaces

    NASA Astrophysics Data System (ADS)

    Benito, N.; Palacio, C.

    2014-05-01

    The reaction of oxygen with titanium deposited on Si (1 0 0) surfaces has been studied at room temperature and low oxygen pressures, using XPS and ARXPS. The experimental results for Ti growth on Si can be explained using a model involving a two stage mechanism. The first stage is characterized by the formation of a uniform TiSix layer ˜4 ML thick and the second one by the formation of metallic titanium that grows following a Stranki-Krastanov mechanism, that is, the formation of a Ti monolayer followed by the growth of Ti islands (7 ML thick) over the TiSix layer previously formed. The oxidation of Ti/Si interfaces strongly depends on the interface that is oxidized. For an interface corresponding to the first stage of deposition a Ti-O-Si mixed oxide layer is formed on the near surface. This layer is on top of a multilayer structure which is composed of TiO2 (Ti4+), titanium suboxides along with TiSi (TiSi + Ti1+ + Ti2+ + Ti3+), and substrate when going from the outer surface to the substrate whereas for an interface corresponding to the second stage no Ti-O-Si mixed oxide is detected and a Ti0 rich layer is observed between the titanium suboxides and the Si substrate.

  8. Numerically controlled atmospheric-pressure plasma sacrificial oxidation using electrode arrays for improving silicon-on-insulator layer uniformity

    NASA Astrophysics Data System (ADS)

    Takei, Hiroyasu; Yoshinaga, Keinosuke; Matsuyama, Satoshi; Yamauchi, Kazuto; Sano, Yasuhisa

    2015-01-01

    Silicon-on-insulator (SOI) wafers are important semiconductor substrates in high-performance devices. In accordance with device miniaturization requirements, ultrathin and highly uniform top silicon layers (SOI layers) are required. A novel method involving numerically controlled (NC) atmospheric-pressure plasma sacrificial oxidation using an electrode array system was developed for the effective fabrication of an ultrathin SOI layer with extremely high uniformity. Spatial resolution and oxidation properties are the key factors controlling ultraprecision machining. The controllability of plasma oxidation and the oxidation properties of the resulting experimental electrode array system were examined. The results demonstrated that the method improved the thickness uniformity of the SOI layer over one-sixth of the area of an 8-in. wafer area.

  9. The dependence of room-temperature oxidation of silicon catalyzed by Cu3Si on the silicide grain size

    NASA Astrophysics Data System (ADS)

    Liu, C. S.; Chen, L. J.

    1994-03-01

    The dependence of room-temperature oxidation of silicon catalyzed by Cu3Si on the silicide grain size has been investigated by transmission electron microscopy and x-ray diffractometry. The thickness of the SiO2 layer was found to decrease with the average grain size of the starting Cu3Si layer. High-resolution transmission electron microscopy revealed that oxidation is initiated at the grain boundaries. Oxide film as thick as 4.5 μm, compared to a previous record of about 2 μm, was grown at room temperature over a period of two weeks in (001) samples. The growth of thick oxide films was achieved by minimizing the grain size of Cu3Si through a reaction between Cu and an intermediate amorphous silicon layer at 200 °C.

  10. Silicon oxynitride films deposited by reactive high power impulse magnetron sputtering using nitrous oxide as a single-source precursor

    SciTech Connect

    Hänninen, Tuomas Schmidt, Susann; Jensen, Jens; Hultman, Lars; Högberg, Hans

    2015-09-15

    Silicon oxynitride thin films were synthesized by reactive high power impulse magnetron sputtering of silicon in argon/nitrous oxide plasmas. Nitrous oxide was employed as a single-source precursor supplying oxygen and nitrogen for the film growth. The films were characterized by elastic recoil detection analysis, x-ray photoelectron spectroscopy, x-ray diffraction, x-ray reflectivity, scanning electron microscopy, and spectroscopic ellipsometry. Results show that the films are silicon rich, amorphous, and exhibit a random chemical bonding structure. The optical properties with the refractive index and the extinction coefficient correlate with the film elemental composition, showing decreasing values with increasing film oxygen and nitrogen content. The total percentage of oxygen and nitrogen in the films is controlled by adjusting the gas flow ratio in the deposition processes. Furthermore, it is shown that the film oxygen-to-nitrogen ratio can be tailored by the high power impulse magnetron sputtering-specific parameters pulse frequency and energy per pulse.

  11. Silicon nanowire oxidation: the influence of sidewall structure and gold distribution

    NASA Astrophysics Data System (ADS)

    Sivakov, V. A.; Scholz, R.; Syrowatka, F.; Falk, F.; Gösele, U.; Christiansen, S. H.

    2009-10-01

    The oxidation behavior of Si nanowires (SiNWs) grown by the gold (Au) catalyzed vapor-liquid-solid (VLS) growth process in an electron beam evaporation (EBE) reactor is studied. The VLS SiNWs exhibit hexagonal shape with essentially {112} facets where each facet shows a saw-tooth faceting itself, consisting of alternating {111} and {113} facets. Depending on growth temperatures (450-750 °C) and evaporation currents (40-80 mA) that determine the silicon vapor supply, this facet formation is more or less pronounced. The diffusion of Au atoms on the faceted SiNW surfaces and the formation of Au nanoparticles on the SiNW facets during growth and during ex situ annealing are studied. Upon diffusion, the Au atoms agglomerate and form Au nanoparticles that preferably arrange themselves on {113} facets. Upon annealing in air at temperatures between 800 and 950 °C the gold nanoparticles agglomerate further and form bigger particles of a few tens of nm in diameter that reside at the interface between the growing silica (SiO2) layer and the SiNW itself, which in turn shrinks during SiNW oxidation. The oxide layer thickness and the oxide appearance depend on the annealing conditions (time and temperature) and systematically varied oxidation processing is described in this paper as investigated by cross-sectional transmission electron microscopy (TEM) including high resolution studies as well as scanning electron microscopy (SEM) studies. Our results strongly suggest that the SiNWs can be fully oxidized, thus forming silica NWs that can either keep their initial shape or, under certain annealing conditions, do not keep their initial wire shape but assume a bamboo-like shape that forms most likely as a result of locally high stresses that are related to nanocrack formation. The nanocracks form in the growing oxide layer mediated by the presence of Au nanoparticles that yield gold-enhanced SiNW oxidation and thus a faster oxidation rate.

  12. Functionalization of oxidized silicon surfaces with methyl groups and their characterization

    NASA Astrophysics Data System (ADS)

    Schmohl, A.; Khan, A.; Hess, P.

    2004-07-01

    Oxidized silicon surfaces were functionalized with chemically bonded methyl end groups and characterized by means of Fourier transform infrared (FTIR) spectroscopy with the attenuated total reflection (ATR) method, contact angle measurements, scanning force microscopy (SFM), and thermal desorption spectroscopy (TDS). Detailed results are presented for trimethylsilyl (TMS) and pentamethyldisilyl (PMDS) terminated surfaces, which were prepared by silanization with suitable chloro compounds. The IR spectra of the TMS-terminated surface exhibit two CH stretching peaks at 2904 and 2963 cm -1. In the thermal desorption experiments desorption of trimethylsilanol and methane was observed at 550 ∘C. The IR spectra of the PMDS-terminated surface show two CH stretching peaks at 2898 and 2955 cm -1. The thermal desorption spectra indicate cleavage of Si-Si bonds and desorption of trimethylsilane at 530 ∘C. The wetting behavior, adhesion, and mechanical properties were studied by contact angle measurements and SFM. The results are compared with the well-defined Si(111)-(1×1):H surface and a self-assembled monolayer (SAM) on a silicon surface with long hydrocarbon chains, prepared with octadecyltrichlorosilane (OTS, H 3C(CH 2) 17SiCl 3). The water contact angle was 82 ∘ for TMS and 85 ∘ for PMDS end groups. The friction forces measured for the TMS- and PMDS-terminated surfaces were comparable and about 3 times higher than that of the H-terminated silicon and the OTS-SAM surface. The corresponding friction coefficients were 0.17, 0.18, 0.34, and 0.45 for Si(111)-(1×1):H, OTS SAM, TMS, and PMDS surfaces, respectively.

  13. Tunnel oxide passivated contacts formed by ion implantation for applications in silicon solar cells

    NASA Astrophysics Data System (ADS)

    Reichel, Christian; Feldmann, Frank; Müller, Ralph; Reedy, Robert C.; Lee, Benjamin G.; Young, David L.; Stradins, Paul; Hermle, Martin; Glunz, Stefan W.

    2015-11-01

    Passivated contacts (poly-Si/SiOx/c-Si) doped by shallow ion implantation are an appealing technology for high efficiency silicon solar cells, especially for interdigitated back contact (IBC) solar cells where a masked ion implantation facilitates their fabrication. This paper presents a study on tunnel oxide passivated contacts formed by low-energy ion implantation into amorphous silicon (a-Si) layers and examines the influence of the ion species (P, B, or BF2), the ion implantation dose (5 × 1014 cm-2 to 1 × 1016 cm-2), and the subsequent high-temperature anneal (800 °C or 900 °C) on the passivation quality and junction characteristics using double-sided contacted silicon solar cells. Excellent passivation quality is achieved for n-type passivated contacts by P implantations into either intrinsic (undoped) or in-situ B-doped a-Si layers with implied open-circuit voltages (iVoc) of 725 and 720 mV, respectively. For p-type passivated contacts, BF2 implantations into intrinsic a-Si yield well passivated contacts and allow for iVoc of 690 mV, whereas implanted B gives poor passivation with iVoc of only 640 mV. While solar cells featuring in-situ B-doped selective hole contacts and selective electron contacts with P implanted into intrinsic a-Si layers achieved Voc of 690 mV and fill factor (FF) of 79.1%, selective hole contacts realized by BF2 implantation into intrinsic a-Si suffer from drastically reduced FF which is caused by a non-Ohmic Schottky contact. Finally, implanting P into in-situ B-doped a-Si layers for the purpose of overcompensation (counterdoping) allowed for solar cells with Voc of 680 mV and FF of 80.4%, providing a simplified and promising fabrication process for IBC solar cells featuring passivated contacts.

  14. Efficient preservation in a silicon oxide matrix of Escherichia coli, producer of recombinant proteins.

    PubMed

    Desimone, Martín F; De Marzi, Mauricio C; Copello, Guillermo J; Fernández, Marisa M; Malchiodi, Emilio L; Diaz, Luis E

    2005-10-01

    The aim of this work was to study the use of silicon oxide matrices for the immobilization and preservation of recombinant-protein-producing bacteria. We immobilized Escherichia coli BL21 transformants containing different expression plasmids. One contained DNA coding for a T-cell receptor beta chain, which was expressed as inclusion bodies in the cytoplasm. The other two encoded bacterial superantigens Staphylococcal Enterotoxin G and Streptococcal Superantigen, which were expressed as soluble proteins in the periplasm. The properties of immobilization and storage stability in inorganic matrices prepared from two precursors, silicon dioxide and tetraethoxysilane, were studied. Immobilized E. coli was stored in sealed tubes at 4 and 20 degrees C and the number of viable cells and level of recombinant protein production were analyzed weekly. Different tests showed that the biochemical characteristics of immobilized E. coli remained intact. At both temperatures selected, we found that the number of bacteria in silicon dioxide-derived matrix was of the same order of magnitude (10(9) cfu ml(-1)) as before immobilization, for 2 months. After 2 weeks, cells immobilized in an alkoxide-derived matrix decreased to 10(4) cfu ml(-1) at 4 degrees C, and no viable cells were detected at 20 degrees C. We found that immobilized bacteria could be used as a starter to produce recombinant proteins with yields comparable to those obtained from glycerol stocks: 15 mg l(-1) for superantigens and 2 mg l(-1) for T-cell receptor beta chain. These results contribute to the development of methods for microbial cell preservation under field conditions.

  15. Characterization of Interface State in Silicon Carbide Metal Oxide Semiconductor Capacitors

    NASA Astrophysics Data System (ADS)

    Kao, Wei-Chieh

    Silicon carbide (SiC) has always been considered as an excellent material for high temperature and high power devices. Since SiC is the only compound semiconductor whose native oxide is silicon dioxide (SiO2), it puts SiC in a unique position. Although SiC metal oxide semiconductor (MOS) technology has made significant progress in recent years, there are still a number of issues to be overcome before more commercial SiC devices can enter the market. The prevailing issues surrounding SiC MOSFET devices are the low channel mobility, the low quality of the oxide layer and the high interface state density at the SiC/SiO2 interface. Consequently, there is a need for research to be performed in order to have a better understanding of the factors causing the poor SiC/SiO2 interface properties. In this work, we investigated the generation lifetime in SiC materials by using the pulsed metal oxide semiconductor (MOS) capacitor method and measured the interface state density distribution at the SiC/SiO2 interface by using the conductance measurement and the high-low frequency capacitance technique. These measurement techniques have been performed on n-type and p-type SiC MOS capacitors. In the course of our investigation, we observed fast interface states at semiconductor-dielectric interfaces in SiC MOS capacitors that underwent three different interface passivation processes, such states were detected in the nitrided samples but not observed in PSG-passivated samples. This result indicate that the lack of fast states at PSG-passivated interface is one of the main reasons for higher channel mobility in PSG MOSFETs. In addition, the effect of mobile ions in the oxide on the response time of interface states has been investigated. In the last chapter we propose additional methods of investigation that can help elucidate the origin of the particular interface states, enabling a more complete understanding of the SiC/SiO2 material system.

  16. Polycrystalline silicon ring resonator photodiodes in a bulk complementary metal-oxide-semiconductor process.

    PubMed

    Mehta, Karan K; Orcutt, Jason S; Shainline, Jeffrey M; Tehar-Zahav, Ofer; Sternberg, Zvi; Meade, Roy; Popović, Miloš A; Ram, Rajeev J

    2014-02-15

    We present measurements on resonant photodetectors utilizing sub-bandgap absorption in polycrystalline silicon ring resonators, in which light is localized in the intrinsic region of a p+/p/i/n/n+ diode. The devices, operating both at λ=1280 and λ=1550  nm and fabricated in a complementary metal-oxide-semiconductor (CMOS) dynamic random-access memory emulation process, exhibit detection quantum efficiencies around 20% and few-gigahertz response bandwidths. We observe this performance at low reverse biases in the range of a few volts and in devices with dark currents below 50 pA at 10 V. These results demonstrate that such photodetector behavior, previously reported by Preston et al. [Opt. Lett. 36, 52 (2011)], is achievable in bulk CMOS processes, with significant improvements with respect to the previous work in quantum efficiency, dark current, linearity, bandwidth, and operating bias due to additional midlevel doping implants and different material deposition. The present work thus offers a robust realization of a fully CMOS-fabricated all-silicon photodetector functional across a wide wavelength range.

  17. Density profile in thin films of polybutadiene on silicon oxide substrates: a TOF-NR study.

    PubMed

    Hoppe, E Tilo; Sepe, Alessandro; Haese-Seiller, Martin; Moulin, Jean-François; Papadakis, Christine M

    2013-08-27

    We have investigated thin films from fully deuterated polybutadiene (PB-d6) on silicon substrates with the aim of detecting and characterizing a possible interphase in the polymer film near the substrate using time-of-flight neutron reflectometry (TOF-NR). As substrates, thermally oxidized silicon wafers were either used as such or they were coated with triethylethoxysilyl modified 1,2-PB prior to deposition of the PB-d6 film. TOF-NR reveals that, for both substrates, the scattering length density (SLD) of the PB films decreases near the solid interface. The reduction of SLD is converted to an excess fraction of free volume. To further verify the existence of the interphase in PB-d6, we attempt to model the TOF-NR curves with density profiles which do not feature an interphase. These density profiles do not describe the TOF-NR curves adequately. We conclude that, near the solid interface, an interphase having an SLD lower than the bulk of the film is present.

  18. Electronic passivation of silicon surfaces by thin films of atomic layer deposited gallium oxide

    SciTech Connect

    Allen, T. G. Cuevas, A.

    2014-07-21

    This paper proposes the application of gallium oxide (Ga{sub 2}O{sub 3}) thin films to crystalline silicon solar cells. Effective passivation of n- and p-type crystalline silicon surfaces has been achieved by the application of very thin Ga{sub 2}O{sub 3} films prepared by atomic layer deposition using trimethylgallium (TMGa) and ozone (O{sub 3}) as the reactants. Surface recombination velocities as low as 6.1 cm/s have been recorded with films less than 4.5 nm thick. A range of deposition parameters has been explored, with growth rates of approximately 0.2 Å/cycle providing optimum passivation. The thermal activation energy for passivation of the Si-Ga{sub 2}O{sub 3} interface has been found to be approximately 0.5 eV. Depassivation of the interface was observed for prolonged annealing at increased temperatures. The activation energy for depassivation was measured to be 1.9 eV.

  19. Damp and dry heat degradation of thermal oxide passivation of p+ silicon

    NASA Astrophysics Data System (ADS)

    Thomson, Andrew; Gardner, Matthew; McIntosh, Keith; Shalav, Avi; Bullock, James

    2014-03-01

    Thermal SiO2 passivates both moderately and heavily doped silicon surfaces irrespective of the dopant type, which is advantageous in high-efficiency solar cell designs. Commercial photovoltaic cells are submitted to accelerated ageing tests, such as damp-heat exposure, to ensure they maintain their performance for at least 20 yr. We find damp-heat exposure causes a severe and rapid degradation of thermal SiO2 passivation on p+ silicon surfaces. The reaction is so severe that the diffused-region recombination in the degraded state is limited by the diffusion of minority carriers to the Si-SiO2 interface not the density of interface defects Dit. Certainly, this effect renders the thermal-oxide passivation useless if employed on a solar cell. To study the cause of the degradation, we also test the effects of storage in dry heat and room ambient conditions. Examination of the rate of degradation in the tested storage conditions in comparison with modelled diffusion of moisture in SiO2, we find a significant correlation between the time dependent J0e and moisture supplied to the interface, leading us to the conclusion that moisture ingression and subsequent reaction at the SiO2-Si interface are the cause of both damp-heat and room- ambient degradation.

  20. Silicon dioxide nanoparticles increase macrophage atherogenicity: Stimulation of cellular cytotoxicity, oxidative stress, and triglycerides accumulation.

    PubMed

    Petrick, Lauren; Rosenblat, Mira; Paland, Nicole; Aviram, Michael

    2016-06-01

    Nanoparticle research has focused on their toxicity in general, while increasing evidence points to additional specific adverse effects on atherosclerosis development. Arterial macrophage cholesterol and triglyceride (TG) accumulation and foam cell formation are the hallmark of early atherogenesis, leading to cardiovascular events. To investigate the in vitro atherogenic effects of silicon dioxide (SiO2 ), J774.1 cultured macrophages (murine cell line) were incubated with SiO2 nanoparticle (SP, d = 12 nm, 0-20 µg/mL), followed by cellular cytotoxicity, oxidative stress, TG and cholesterol metabolism analyses. A significant dose-dependent increase in oxidative stress (up to 164%), in cytotoxicity (up to 390% measured by lactate dehydrogenase (LDH) release), and in TG content (up to 63%) was observed in SiO2 exposed macrophages compared with control cells. A smaller increase in macrophage cholesterol mass (up to 22%) was noted. TG accumulation in macrophages was not due to a decrease in TG cell secretion or to an increased TG biosynthesis rate, but was the result of attenuated TG hydrolysis secondary to decreased lipase activity and both adipose triglyceride lipase (ATGL) and hormone-sensitive lipase (HSL) protein expression (by 42 and 25%, respectively). Overall, SPs showed pro-atherogenic effects on macrophages as observed by cytotoxicity, increased oxidative stress and TG accumulation. © 2014 Wiley Periodicals, Inc. Environ Toxicol 31: 713-723, 2016.

  1. Hot-pressed silicon nitride with various lanthanide oxides as sintering additives

    NASA Technical Reports Server (NTRS)

    Ueno, K.; Toibana, Y.

    1984-01-01

    The effects of addition of various lanthanide oxides and their mixture with Y2O3 on the sintering of Si3N4 were investigated. The addition of simple and mixed lanthanide oxides promoted the densification of Si3N4 in hot-pressing at 1800 C under 300-400kg/ centimeters squared for 60 min. The crystallization of yttrium and lanthanide-silicon oxynitrides which was observed inn the sintered body containing yttrium-lanthanide mixed oxides as additives led to the formation of a highly refractory Si3N4 ceramic having a bending strength of 82 and 84 kg/millimeters squared at room temperature and 1300 C respectively. In a Y2O3+La2O3 system, a higher molar ratio of La2O3 to Y2O3 gave a higher hardness and strength at high temperatures. It was found that 90 min was an optimum sintering time for the highest strength.

  2. Controllable shrinking of inverted-pyramid silicon nanopore arrays by dry-oxygen oxidation.

    PubMed

    Deng, Tao; Chen, Jian; Li, Mengwei; Wang, Yifan; Zhao, Chenxu; Zhang, Zhonghui; Liu, Zewen

    2013-12-20

    A novel and simple technique for the controllable shrinkage of inverted-pyramid silicon (Si) nanopore arrays is reported. The Si nanopore arrays with sizes from 60 to 150 nm, made using a combination of dry and wet etching, were shrunk to sub 10 nm, or even closed, using direct dry-oxygen oxidation at 900 ° C. The shrinkage process of the pyramidal nanopore induced by oxidation was carefully modeled and simulated. The simulation was found to be in good agreement with the experimental data within most of the oxidation time range. Using this method, square nanopore arrays with an average size of 30 nm, and rectangular nanopores and nanoslits with feature sizes as small as 8 nm, have been obtained. Furthermore, focused ion beam cutting experiments revealed that the inner structure of the nanopore after the shrinkage kept its typical inverted-pyramid shape, which is of importance in many fields such as biomolecular sensors and ionic analogs of electronic devices, as well as nanostencils for surface nano-patterning.

  3. FT IR spectroscopy of silicon oxide and HfSiOx layer formation

    NASA Astrophysics Data System (ADS)

    Kopani, M.; Mikula, M.; Pinčík, E.; Kobayashi, H.; Takahashi, M.

    2014-09-01

    Hafnium oxide is an interesting material for a broad range of applications. Infrared spectroscopy was used to study the impact of aqueous environment and mechanism of formation of 5 nm HfO2 films after nitric acid oxidation (NAOS) of n-doped Si (1 0 0) substrates. Samples were annealed in N2 atmosphere at different temperatures 200-400 °C for 10 min. For NAOS passivation 100% vapor of HNO3 (set A) and 98% aqueous solution (set B) was used. FTIR measurements reveal silicon oxide layer formation and formation of HfSiOx layer. There are differences in HfSiOx layer formation between samples of set A and B caused by different environment. This layer of samples set B is thinner because of Sisbnd OH bonds that may inhibit formation of this layer. Absorption IR spectra of set A show more ordered SiOx layer in comparison with samples of set B. The structural properties of HfO2 are crucial for application in the future.

  4. Light-induced water oxidation at silicon electrodes functionalized with a cobalt oxygen-evolving catalyst

    PubMed Central

    Pijpers, Joep J. H.; Winkler, Mark T.; Surendranath, Yogesh; Buonassisi, Tonio; Nocera, Daniel G.

    2011-01-01

    Integrating a silicon solar cell with a recently developed cobalt-based water-splitting catalyst (Co-Pi) yields a robust, monolithic, photo-assisted anode for the solar fuels process of water splitting to O2 at neutral pH. Deposition of the Co-Pi catalyst on the Indium Tin Oxide (ITO)-passivated p-side of a np-Si junction enables the majority of the voltage generated by the solar cell to be utilized for driving the water-splitting reaction. Operation under neutral pH conditions fosters enhanced stability of the anode as compared to operation under alkaline conditions (pH 14) for which long-term stability is much more problematic. This demonstration of a simple, robust construct for photo-assisted water splitting is an important step towards the development of inexpensive direct solar-to-fuel energy conversion technologies. PMID:21646536

  5. Photoluminescence of oxidized silicon nanoclusters deposited on the basal plane of graphite

    NASA Astrophysics Data System (ADS)

    Dinh, L. N.; Chase, L. L.; Balooch, M.; Terminello, L. J.; Wooten, F.

    1994-12-01

    Silicon (Si) nanoclusters, with an average size of 3-5 nm in diameter, have been deposited on the basal plane of highly oriented pyrolytic graphite in an ultrahigh vacuum chamber, and investigated by scanning tunneling microscopy. Clusters passivated in situ with hydrogen or oxygen showed no detectable visible photoluminescence (PL). Prolonged exposure of the clusters to ambient air, however, resulted in strong stable red to green-blue PL spectra. Further study of these clusters by x-ray photoelectron spectroscopy and Auger electron spectroscopy revealed the existence of only SiO2 for the prolonged air-exposed samples, and the existence of SiOx (x ranged from 0 to 2) for the in situ oxidized samples which did not exhibit any detectable visible PL. We believe that the observed visible PL originated from defects in SiO2.

  6. The formation of light emitting cerium silicates in cerium-doped silicon oxides

    SciTech Connect

    Li Jing; Zalloum, Othman; Roschuk, Tyler; Heng Chenglin; Wojcik, Jacek; Mascher, Peter

    2009-01-05

    Cerium-doped silicon oxides with cerium concentrations of up to 0.9 at. % were deposited by electron cyclotron resonance plasma enhanced chemical vapor deposition. Bright cerium related photoluminescence, easily seen even under room lighting conditions, was observed from the films and found to be sensitive to film composition and annealing temperature. The film containing 0.9 at. % Ce subjected to anneal in N{sub 2} at 1200 deg. C for 3 h showed the most intense cerium-related emission, easily visible under bright room lighting conditions. This is attributed to the formation of cerium silicate [Ce{sub 2}Si{sub 2}O{sub 7} or Ce{sub 4.667} (SiO{sub 4}){sub 3}O], the presence of which was confirmed by high resolution transmission electron microscopy.

  7. Synthesis of magnetite-silica core-shell nanoparticles via direct silicon oxidation.

    PubMed

    Wang, Shuxian; Tang, Jing; Zhao, Hongfu; Wan, Jiaqi; Chen, Kezheng

    2014-10-15

    Magnetite-silica core-shell nanoparticles (Fe3O4@SiO2 NPs) were prepared from silicon powder by direct oxidation without using any expensive precursors (such as TEOS) and organic solvents. The as-prepared Fe3O4@SiO2 NPs were characterized by TEM, DLS, XRD, FT-IR, zeta potential and NMR Analyzer. The results show that the Fe3O4@SiO2 NPs are monodispersed core-shell nanostructures with single cores that were uniformly coated by silica shells. The relaxation property indicates that Fe3O4@SiO2 NPs have desirable characteristics for T2 MRI contrast agents. This facile and green method is promising for large-scale production, which would open new opportunities for preparing core-shell nanostructures for biomedical applications.

  8. Characterization and simulation on antireflective coating of amorphous silicon oxide thin films with gradient refractive index

    NASA Astrophysics Data System (ADS)

    Huang, Lu; Jin, Qi; Qu, Xingling; Jin, Jing; Jiang, Chaochao; Yang, Weiguang; Wang, Linjun; Shi, Weimin

    2016-08-01

    The optical reflective properties of silicon oxide (SixOy) thin films with gradient refractive index are studied both theoretically and experimentally. The thin films are widely used in photovoltaic as antireflective coatings (ARCs). An effective finite difference time domain (FDTD) model is built to find the optimized reflection spectra corresponding to structure of SixOy ARCs with gradient refractive index. Based on the simulation analysis, it shows the variation of reflection spectra with gradient refractive index distribution. The gradient refractive index of SixOy ARCs can be obtained in adjustment of SiH4 to N2O ratio by plasma-enhanced chemical vapor deposition (PECVD) system. The optimized reflection spectra measured by UV-visible spectroscopy confirms to agree well with that simulated by FDTD method.

  9. Soft lithographic functionalization and patterning oxide-free silicon and germanium.

    PubMed

    Bowers, Carleen M; Toone, Eric J; Clark, Robert L; Shestopalov, Alexander A

    2011-12-16

    The development of hybrid electronic devices relies in large part on the integration of (bio)organic materials and inorganic semiconductors through a stable interface that permits efficient electron transport and protects underlying substrates from oxidative degradation. Group IV semiconductors can be effectively protected with highly-ordered self-assembled monolayers (SAMs) composed of simple alkyl chains that act as impervious barriers to both organic and aqueous solutions. Simple alkyl SAMs, however, are inert and not amenable to traditional patterning techniques. The motivation for immobilizing organic molecular systems on semiconductors is to impart new functionality to the surface that can provide optical, electronic, and mechanical function, as well as chemical and biological activity. Microcontact printing (μCP) is a soft-lithographic technique for patterning SAMs on myriad surfaces. Despite its simplicity and versatility, the approach has been largely limited to noble metal surfaces and has not been well developed for pattern transfer to technologically important substrates such as oxide-free silicon and germanium. Furthermore, because this technique relies on the ink diffusion to transfer pattern from the elastomer to substrate, the resolution of such traditional printing is essentially limited to near 1 μm. In contrast to traditional printing, inkless μCP patterning relies on a specific reaction between a surface-immobilized substrate and a stamp-bound catalyst. Because the technique does not rely on diffusive SAM formation, it significantly expands the diversity of patternable surfaces. In addition, the inkless technique obviates the feature size limitations imposed by molecular diffusion, facilitating replication of very small (<200 nm) features. However, up till now, inkless μCP has been mainly used for patterning relatively disordered molecular systems, which do not protect underlying surfaces from degradation. Here, we report a simple, reliable

  10. Formation of iron-oxide nanorods on the surface of silicon by using annealing technique

    NASA Astrophysics Data System (ADS)

    Rawat, Nitin; Kumari, Sarita; Kumar, Rajesh

    2016-12-01

    In this article, we report the synthesis of iron-oxide nanorods on silicon (Si) substrates. The nanorods were formed by annealing an iron chloride solution on the surface of a Si at 950 °C in the presence of a reducing gas (H2) and a diluting gas (Ar). The surface morphologies of the nanorods were investigated by using field-emission scanning electron microscopy, and their compositions and structural characterization were investigated by elemental using energy dispersive X-ray spectroscopy and high-resolution transmission electron microscopy (HRTEM), respectively. The HRTEM study shows a crystalline formation of the nanorods. The electron diffraction pattern along the viewing (111) direction and the HRTEM result shows an interplanar distance equal to 2.17 Å, which is nearly equal to the standard value 2.3 Å of FeO. The as-fabricated nanorods can be used for many technological applications.

  11. Paralinear Oxidation of Silicon Nitride in a Water Vapor/Oxygen Environment

    NASA Technical Reports Server (NTRS)

    Fox, Dennis S.; Opila, Elizabeth J.; Nguyen, QuynhGiao; Humphrey, Donald L.; Lewton, Susan M.; Gray, Hugh R. (Technical Monitor)

    2002-01-01

    Three silicon nitride materials were exposed to dry oxygen flowing at 0.44 cm/s at temperatures between 1200 and 1400 C. Reaction kinetics were measured with a continuously recording microbalance. Parabolic kinetics were observed. When the same materials were exposed to a 50% H2O - 50% O2 gas mixture flowing at 4.4 cm/s, all three types exhibited paralinear kinetics. The material is oxidized by water vapor to form solid silica. The protective silica is in turn volatilized by water vapor to form primarily gaseous Si(OH)4. Nonlinear least squares analysis and a paralinear kinetic model were used to determine both parabolic and linear rate constants from the kinetic data. Volatilization of the protective silica scale can result in accelerated consumption of Si3N4. Recession rates under conditions more representative of actual combustors are compared to the furnace data.

  12. Membrane on a chip: a functional tethered lipid bilayer membrane on silicon oxide surfaces.

    PubMed

    Atanasov, Vladimir; Knorr, Nikolaus; Duran, Randolph S; Ingebrandt, Sven; Offenhäusser, Andreas; Knoll, Wolfgang; Köper, Ingo

    2005-09-01

    Tethered membranes have been proven during recent years to be a powerful and flexible biomimetic platform. We reported in a previous article on the design of a new architecture based on the self-assembly of a thiolipid on ultrasmooth gold substrates, which shows extremely good electrical sealing properties as well as functionality of a bilayer membrane. Here, we describe the synthesis of lipids for a more modular design and the adaptation of the linker part to silane chemistry. We were able to form a functional tethered bilayer lipid membrane with good electrical sealing properties covering a silicon oxide surface. We demonstrate the functional incorporation of the ion carrier valinomycin and of the ion channel gramicidin.

  13. Synthesis of silicon nanotubes with cobalt silicide ends using anodized aluminum oxide template

    NASA Astrophysics Data System (ADS)

    Zhang, Zhang; Liu, Lifeng; Shimizu, Tomohiro; Senz, Stephan; Gösele, Ulrich

    2010-02-01

    Silicon nanotubes (SiNTs) are compatible with Si-based semiconductor technology. In particular, the small diameters and controllable structure of such nanotubes are remaining challenges. Here we describe a method to fabricate SiNTs intrinsically connected with cobalt silicide ends based on highly ordered anodic aluminum oxide (AAO) templates. Size and growth direction of the SiNTs can be well controlled via the templates. The growth of SiNTs is catalyzed by the Co nanoparticles reduced on the pore walls of the AAO after annealing, with a controllable thickness at a given growth temperature and time. Simultaneously, cobalt silicide forms on the bottom side of the SiNTs.

  14. Translocation of double-strand DNA through a silicon oxide nanopore.

    PubMed

    Storm, A J; Chen, J H; Zandbergen, H W; Dekker, C

    2005-05-01

    We report double-strand DNA translocation experiments using silicon oxide nanopores with a diameter of about 10 nm . By monitoring the conductance of a voltage-biased pore, we detect molecules with a length ranging from 6557 to 48 500 base pairs. We find that the molecules can pass the pore both in a straight linear fashion and in a folded state. Experiments on circular DNA further support this picture. We sort the molecular events according to their folding state and estimate the folding position. As a proof-of-principle experiment, we show that a nanopore can be used to distinguish the lengths of DNA fragments present in a mixture. These experiments pave the way for quantitative analytical techniques with solid-state nanopores.

  15. Patterns of discoloration and oxidation by direct and scattered fluxes on LDEF, including oxygen on silicon

    NASA Technical Reports Server (NTRS)

    Frederickson, A. R.; Filz, R. C.; Rich, F. J.; Sagalyn, P. L.

    1992-01-01

    A number of interesting discoloration patterns are clearly evident on MOOO2-1 which resides on the three faces of the Long Duration Exposure Facility (LDEF). Most interesting is the pattern of blue oxidation on polished single crystal silicon apparently produced by scattered or direct ram oxygen atoms along the earth face. A complete explanation for the patterns has not yet been obtained. All honeycomb outgassing holes have a small discoloration ring around them that varies in color. The shadow cast by a suspended wire on the earth face surface is not easily explained by either solar photons or by ram flux. The shadows and the dark/light regions cannot be explained consistently by the process of solar ultraviolet paint-darkening modulated by ram flux oxygen bleaching of the paint.

  16. Silicon oxide nanoparticles doped PQ-PMMA for volume holographic imaging filters.

    PubMed

    Luo, Yuan; Russo, Juan M; Kostuk, Raymond K; Barbastathis, George

    2010-04-15

    Holographic imaging filters are required to have high Bragg selectivity, namely, narrow angular and spectral bandwidth, to obtain spatial-spectral information within a three-dimensional object. In this Letter, we present the design of holographic imaging filters formed using silicon oxide nanoparticles (nano-SiO(2)) in phenanthrenquinone-poly(methyl methacrylate) (PQ-PMMA) polymer recording material. This combination offers greater Bragg selectivity and increases the diffraction efficiency of holographic filters. The holographic filters with optimized ratio of nano-SiO(2) in PQ-PMMA can significantly improve the performance of Bragg selectivity and diffraction efficiency by 53% and 16%, respectively. We present experimental results and data analysis demonstrating this technique in use for holographic spatial-spectral imaging filters.

  17. Fabrication and optical property of silicon oxide layer coated semiconductor gallium nitride nanowires.

    PubMed

    Zhang, Jun; Zhang, Lide; Jiang, Feihong; Yang, Yongdong; Li, Jianping

    2005-01-13

    Quasi one-dimensional GaN-SiO(2) nanostructures, with a silicon oxide layer coated on semiconductor GaN nanowires, were successfully synthesized through as-synthesized SiO(2) nanoparticles-assisted reaction. The experimental results indicate that the nanostructure consists of single-crystalline wurtzite GaN nanowire core, an amorphous SiO(2) outer shell separated in the radial direction. These quasi one-dimensional nanowires have the diameters of a few tens of nanometers and lengths up to several hundreds of micrometers. The photoluminescence spectrum of the GaN-SiO(2) nanostructures consists of one broad blue-light emission peak at 480 nm and another weak UV emission peak at 345 nm. The novel method, which may results in high yield and high reproducibility, is demonstrated to be a unique technique for producing nanostructures with controlled morphology.

  18. Quantum dot made in metal oxide silicon-nanowire field effect transistor working at room temperature.

    PubMed

    Lavieville, Romain; Triozon, François; Barraud, Sylvain; Corna, Andrea; Jehl, Xavier; Sanquer, Marc; Li, Jing; Abisset, Antoine; Duchemin, Ivan; Niquet, Yann-Michel

    2015-05-13

    We report the observation of an atomic like behavior from T = 4.2 K up to room temperature in n- and p-type Ω-gate silicon nanowire (NW) transistors. For that purpose, we modified the design of a NW transistor and introduced long spacers between the source/drain and the channel in order to separate the channel from the electrodes. The channel was made extremely small (3.4 nm in diameter with 10 nm gate length) with a thick gate oxide (7 nm) in order to enhance the Coulomb repulsion between carriers, which can be as large as 200 meV when surface roughness promotes charge confinement. Parasitic stochastic Coulomb blockade effect can be eliminated in our devices by choosing proper control voltages. Moreover, the quantum dot can be tuned so that the resonant current at T = 4.2 K exceeds that at room temperature.

  19. Carrier Selective, Passivated Contacts for High Efficiency Silicon Solar Cells based on Transparent Conducting Oxides

    SciTech Connect

    Young, David L.; Nemeth, William; Grover, Sachit; Norman, Andrew; Yuan, Hao-Chih; Lee, Benjamin G.; LaSalvia, Vincenzo; Stradins, Paul

    2014-01-01

    We describe the design, fabrication and results of passivated contacts to n-type silicon utilizing thin SiO2 and transparent conducting oxide layers. High temperature silicon dioxide is grown on both surfaces of an n-type wafer to a thickness <50 Å, followed by deposition of tin-doped indium oxide (ITO) and a patterned metal contacting layer. As deposited, the thin-film stack has a very high J0,contact, and a non-ohmic, high contact resistance. However, after a forming gas anneal, the passivation quality and the contact resistivity improve significantly. The contacts are characterized by measuring the recombination parameter of the contact (J0,contact) and the specific contact resistivity (ρcontact) using a TLM pattern. The best ITO/SiO2 passivated contact in this study has J0,contact = 92.5 fA/cm2 and ρcontact = 11.5 mOhm-cm2. These values are placed in context with other passivating contacts using an analysis that determines the ultimate efficiency and the optimal area fraction for contacts for a given set of (J0,contact, ρcontact) values. The ITO/SiO2 contacts are found to have a higher J0,contact, but a similar ρcontact compared to the best reported passivated contacts.

  20. Valence band offset in heterojunctions between crystalline silicon and amorphous silicon (sub)oxides (a-SiO{sub x}:H, 0 < x < 2)

    SciTech Connect

    Liebhaber, M.; Mews, M.; Schulze, T. F.; Korte, L. Rech, B.; Lips, K.

    2015-01-19

    The heterojunction between amorphous silicon (sub)oxides (a-SiO{sub x}:H, 0 < x < 2) and crystalline silicon (c-Si) is investigated. We combine chemical vapor deposition with in-system photoelectron spectroscopy in order to determine the valence band offset ΔE{sub V} and the interface defect density, being technologically important junction parameters. ΔE{sub V} increases from ≈0.3 eV for the a-Si:H/c-Si interface to >4 eV for the a-SiO{sub 2}/c-Si interface, while the electronic quality of the heterointerface deteriorates. High-bandgap a-SiO{sub x}:H is therefore unsuitable for the hole contact in heterojunction solar cells, due to electronic transport hindrance resulting from the large ΔE{sub V}. Our method is readily applicable to other heterojunctions.

  1. Continuous-flow Mass Production of Silicon Nanowires via Substrate-Enhanced Metal-Catalyzed Electroless Etching of Silicon with Dissolved Oxygen as an Oxidant

    NASA Astrophysics Data System (ADS)

    Hu, Ya; Peng, Kui-Qing; Liu, Lin; Qiao, Zhen; Huang, Xing; Wu, Xiao-Ling; Meng, Xiang-Min; Lee, Shuit-Tong

    2014-01-01

    Silicon nanowires (SiNWs) are attracting growing interest due to their unique properties and promising applications in photovoltaic devices, thermoelectric devices, lithium-ion batteries, and biotechnology. Low-cost mass production of SiNWs is essential for SiNWs-based nanotechnology commercialization. However, economic, controlled large-scale production of SiNWs remains challenging and rarely attainable. Here, we demonstrate a facile strategy capable of low-cost, continuous-flow mass production of SiNWs on an industrial scale. The strategy relies on substrate-enhanced metal-catalyzed electroless etching (MCEE) of silicon using dissolved oxygen in aqueous hydrofluoric acid (HF) solution as an oxidant. The distinct advantages of this novel MCEE approach, such as simplicity, scalability and flexibility, make it an attractive alternative to conventional MCEE methods.

  2. Continuous-flow mass production of silicon nanowires via substrate-enhanced metal-catalyzed electroless etching of silicon with dissolved oxygen as an oxidant.

    PubMed

    Hu, Ya; Peng, Kui-Qing; Liu, Lin; Qiao, Zhen; Huang, Xing; Wu, Xiao-Ling; Meng, Xiang-Min; Lee, Shuit-Tong

    2014-01-13

    Silicon nanowires (SiNWs) are attracting growing interest due to their unique properties and promising applications in photovoltaic devices, thermoelectric devices, lithium-ion batteries, and biotechnology. Low-cost mass production of SiNWs is essential for SiNWs-based nanotechnology commercialization. However, economic, controlled large-scale production of SiNWs remains challenging and rarely attainable. Here, we demonstrate a facile strategy capable of low-cost, continuous-flow mass production of SiNWs on an industrial scale. The strategy relies on substrate-enhanced metal-catalyzed electroless etching (MCEE) of silicon using dissolved oxygen in aqueous hydrofluoric acid (HF) solution as an oxidant. The distinct advantages of this novel MCEE approach, such as simplicity, scalability and flexibility, make it an attractive alternative to conventional MCEE methods.

  3. Gold-bismuth clusters.

    PubMed

    Martínez, Ana

    2014-08-07

    Metal clusters have interesting characteristics, such as the relationship between properties and size of the cluster. This is not always apparent, so theoretical studies can provide relevant information. In this report, optimized structures and electron donor-acceptor properties of AunBim clusters are reported (n + m = 2-7, 20). Density functional theory calculations were performed to obtain optimized structures. The ground states of gold clusters formed with up to seven atoms are planar. The presence of Bi modifies the structure, and the clusters become 3-D. Several optimized geometries have at least one Bi atom bonded to gold or bismuth atoms and form structures similar to NH3. This fragment is also present in clusters with 20 atoms, where the formation of Au3Bi stabilizes the structures. Bismuth clusters are better electron donors and worse electron acceptors than gold clusters. Mixed clusters fall in between these two extremes. The presence of Bi atoms in gold clusters modifies the electron donor-acceptor properties of the clusters, but there is no correlation between the number of Bi atoms present in the cluster and the capacity for donating electrons. The effect of planarity in Au19Bi clusters is the same as that in Au20 clusters. The properties of pure gold clusters are certainly interesting, but clusters formed by Bi and Au are more important because the introduction of different atoms modifies the geometry, the stability, and consequently the physical and chemical properties. Apparently, the presence of Bi may increase the reactivity of gold clusters, but further studies are necessary to corroborate this hypothesis.

  4. Surface etching, chemical modification and characterization of silicon nitride and silicon oxide--selective functionalization of Si3N4 and SiO2.

    PubMed

    Liu, Li-Hong; Michalak, David J; Chopra, Tatiana P; Pujari, Sidharam P; Cabrera, Wilfredo; Dick, Don; Veyan, Jean-François; Hourani, Rami; Halls, Mathew D; Zuilhof, Han; Chabal, Yves J

    2016-03-09

    The ability to selectively chemically functionalize silicon nitride (Si3N4) or silicon dioxide (SiO2) surfaces after cleaning would open interesting technological applications. In order to achieve this goal, the chemical composition of surfaces needs to be carefully characterized so that target chemical reactions can proceed on only one surface at a time. While wet-chemically cleaned silicon dioxide surfaces have been shown to be terminated with surficial Si-OH sites, chemical composition of the HF-etched silicon nitride surfaces is more controversial. In this work, we removed the native oxide under various aqueous HF-etching conditions and studied the chemical nature of the resulting Si3N4 surfaces using infrared absorption spectroscopy (IRAS), x-ray photoelectron spectroscopy (XPS), low energy ion scattering (LEIS), and contact angle measurements. We find that HF-etched silicon nitride surfaces are terminated by surficial Si-F and Si-OH bonds, with slightly subsurface Si-OH, Si-O-Si, and Si-NH2 groups. The concentration of surficial Si-F sites is not dependent on HF concentration, but the distribution of oxygen and Si-NH2 displays a weak dependence. The Si-OH groups of the etched nitride surface are shown to react in a similar manner to the Si-OH sites on SiO2, and therefore no selectivity was found. Chemical selectivity was, however, demonstrated by first reacting the -NH2 groups on the etched nitride surface with aldehyde molecules, which do not react with the Si-OH sites on a SiO2 surface, and then using trichloro-organosilanes for selective reaction only on the SiO2 surface (no reactivity on the aldehyde-terminated Si3N4 surface).

  5. A versatile sol-gel synthesis route to metal-silicon mixed oxide nanocomposites that contain metal oxides as the major phase

    SciTech Connect

    Clapsaddle, B J; Sprehn, D W; Gash, A E; Satcher, J H; Simpson, R L

    2003-12-08

    The general synthesis of metal-silicon mixed oxide nanocomposite materials, including a variety of both main group and transition metals, in which the metal oxide is the major component is described. In a typical synthesis, the metal oxide precursor, MCl{sub x}{times}{sub y}H{sub 2}O (x=3-6, y=0-7), was mixed with the silica precursor, tetramethylorthosilicate (TMOS), in ethanol and gelled using an organic epoxide. The successful preparation of homogeneous, monolithic materials depended on the oxidation state of the metal as well as the epoxide chosen for gelation. The composition of the resulting materials was varied from M/Si=1-5 (mol/mol) by adjusting the amount of TMOS added to the initial metal oxide precursor solution. Supercritical processing of the gels in CO{sub 2} resulted in monolithic, porous aerogel nanocomposite materials with surface areas ranging from 100 - 800 m{sup 2}/g. The bulk materials are composed of metal oxide/silica particles that vary in size from 5 - 20 nm depending on the epoxide used for gelation. Metal oxide and silica dispersion throughout the bulk material is extremely uniform on the nanoscale. The versatility and control of the synthesis method will be discussed as well as the properties of the resulting metal-silicon mixed oxide nanocomposite materials.

  6. New Polysilicon-Oxide-Nitride-Oxide-Silicon Electrically Erasable Programmable Read-only Memory Device Approach for Eliminating Off-Cell Leakage Current

    NASA Astrophysics Data System (ADS)

    Lin, Jyh-Kuang; Chang, Chun-Yen; Huang, Heng-Sheng; Chen, Kun-Luh; Kuo, Dah-Chih

    1994-05-01

    A new polysilicon-oxide-nitride-oxide-silicon (SONOS) electrically erasable programmable read-only memory (EEPROM) device, which eliminated off-cell leakage current, has been described and fabricated. The leakage current is easily encountered in metal-nitride-oxide-silicon (MNOS)-type EEPROMs. Two parasitic transistors, which are in parallel with the desired variable V t cell, are responsible for the leakage current. We demonstrated that the parasitic transistors are caused either by the nearly constant-threshold-voltage parasitic transistors surrounding the active region or by the “fringing effect” in poly-Si gate edges. The on-state and off-state I-V curves of the cell are shown and compared with those of two other different devices. The results reveal that the off-cell leakage current, which is observed in the other two devices, is completely eliminated in the proposed cell.

  7. Comparative cytotoxicity and genotoxicity of cobalt (II, III) oxide, iron (III) oxide, silicon dioxide, and aluminum oxide nanoparticles on human lymphocytes in vitro.

    PubMed

    Rajiv, S; Jerobin, J; Saranya, V; Nainawat, M; Sharma, A; Makwana, P; Gayathri, C; Bharath, L; Singh, M; Kumar, M; Mukherjee, A; Chandrasekaran, N

    2016-02-01

    Despite the extensive use of nanoparticles (NPs) in various fields, adequate knowledge of human health risk and potential toxicity is still lacking. The human lymphocytes play a major role in the immune system, and it can alter the antioxidant level when exposed to NPs. Identification of the hazardous NPs was done using in vitro toxicity tests and this study mainly focuses on the comparative in vitro cytotoxicity and genotoxicity of four different NPs including cobalt (II, III) oxide (Co3O4), iron (III) oxide (Fe2O3), silicon dioxide (SiO2), and aluminum oxide (Al2O3) on human lymphocytes. The Co3O4 NPs showed decrease in cellular viability and increase in cell membrane damage followed by Fe2O3, SiO2, and Al2O3 NPs in a dose-dependent manner after 24 h of exposure to human lymphocytes. The oxidative stress was evidenced in human lymphocytes by the induction of reactive oxygen species, lipid peroxidation, and depletion of catalase, reduced glutathione, and superoxide dismutase. The Al2O3 NPs showed the least DNA damage when compared with all the other NPs. Chromosomal aberration was observed at 100 µg/ml when exposed to Co3O4 NPs and Fe2O3 NPs. The alteration in the level of antioxidant caused DNA damage and chromosomal aberration in human lymphocytes.

  8. Silicon nanocrystals prepared by plasma enhanced chemical vapor deposition: Importance of parasitic oxidation for third generation photovoltaic applications

    NASA Astrophysics Data System (ADS)

    Hartel, A. M.; Gutsch, S.; Hiller, D.; Kübel, C.; Zakharov, N.; Werner, P.; Zacharias, M.

    2012-11-01

    We report on an in-situ oxidation effect during annealing of SiO2/SiO1.0N0.23 multilayers prepared by plasma enhanced chemical vapour deposition (PECVD). This in-situ oxidation leads to an undesired growth of the tunneling oxide and also affects the silicon nanocrystal (SiNC) size control, i.e., a NC shrinkage. The origin of this oxidation is identified to be a "quasi-wet" oxidation by O-H groups incorporated in the PECVD-SiO2 barrier layers. By varying the thickness of the PECVD-SiO2 layer underneath a single SiO1.0N0.23 layer, the extent of NC oxidation is tuned. The shrinkage of SiNCs is proven by a blueshift of the photoluminescence peak position as well as by transmission electron microscopy.

  9. Role of Silicon Carbide in Phase-Evolution and Oxidation Behaviors of Pulse Electrodeposited Nickel-Tungsten Coating

    NASA Astrophysics Data System (ADS)

    Sribalaji, M.; Asiq Rahman, O. S.; Arun Kumar, P.; Suresh Babu, K.; Wasekar, Nitin P.; Sundararajan, G.; Keshri, Anup Kumar

    2017-01-01

    Silicon carbide (SiC) was reinforced in the pulse electrodeposited nickel-tungsten (Ni-W) coatings deposited on the steel substrate, and isothermal oxidation test was performed at 1273 K (1000 °C) for 24 hours. Addition of just 2 vol pct of SiC showed 26 pct increase in the relative oxidation resistance of Ni-W coating. The increased oxidation resistance was attributed to the phase evolution (SiO2, Cr2O3, CrSi2, Ni2SiO4, Cr7C3, Cr3C2, and Cr3Si), which suppressed the spallation of the oxide scale in Ni-W-2 vol pct SiC. The presence of Fe2O3 phase in the oxidized Ni-W coating was mainly responsible for the major multiple spallations at the interface and in the bulk, which resulted in the degradation of oxidation resistance.

  10. Isolated Islands by Selective Local Oxidation (islo): a Silicon-On (soi) Technology for Nanoelectronic and Nanoelectromechanical Applications.

    NASA Astrophysics Data System (ADS)

    Arney, Susanne Christine

    The development of an advanced fully-integrated nanometer-scale isolation technology called the Isolated Islands of Substrate-Silicon by Selective Lateral Oxidation (ISLO) technology is reported. The versatility and applicability of the ISLO technology for diverse nanoelectronic and nanoelectromechanical devices and systems are described relative to the challenging issues of isolation and contacts. The basic ISLO structure is fabricated using electron beam lithography and standard VLSI reactive ion etching and oxidation processes. Single crystal silicon (SCS) islands 100-300-nm-wide, and 500 -2000-nm-tall are electrically and thermally isolated from the underlying substrate by selective lateral thermal oxidation at the base of the islands. Dislocation-free fully-isolated islands are obtained. Full-isolation of the basic ISLO structure depends on island linewidth, oxidation-masking film thicknesses, recess etch profile, and oxidation time and temperature. The extended ISLO technology provides 100-nm-wide, movable, suspended, high stiffness, low mass, SCS or SCS-dielectric-composite beam segments with integrated electrical contacts and metallization for high frequency (5-10 MHz) nanodynamic applications. Fixed or cantilevered beam segments are isolated from the underlying substrate -silicon by thermally grown oxide or an air-bridge. Wedge -pairs or tip-pairs vertically opposed across the isolation oxide or air-bridge have application to electron tunneling or field emission devices. A selectively-sharpened tip -above-a-tip structure is formed at the intersection of cantilevered beam segments. Vertical triple-tip and quadruple -tip structures are demonstrated. A new deep-submicron self-aligned sidewall source/drain, top-surface gate Thin -Film-Silicon-On-Insulator (TFSOI) MOSFET (ISLO FET) based on the inherently three-dimensional, non-planar ISLO structure is presented. Stress-related defect generation and dopant segregation during the oxidation, erosion of the high

  11. Investigation on the formation of projections and cracks in anodic oxidation of reaction-sintered silicon carbide

    NASA Astrophysics Data System (ADS)

    Peng, Kang; Shen, Xinmin; Yamamura, Kazuya; Zhang, Xiaonan; Wang, Dong

    2017-01-01

    Among the present oxidation-assisted polishing (OAP) technique, anodic oxidation is a promising method to process reaction-sintered silicon carbide (RS-SiC) with the assistance of abrasive polishing. Projections and cracks are inevitably formed in the anodic oxidation of RS-SiC for the volume expansion force. Evolvements of the oxide morphologies along with different oxidation voltage and different oxidation time are investigated by scanning electron microscope (SEM). It can be found that when the oxidation time stays the same, size of the projections and cracks on the oxidized RS-SiC sample is gradually enlarged. Meanwhile, when the oxidation voltage stays the same, size of the projections and cracks on the oxidized RS-SiC sample is also enlarged. Details of projections and cracks on the oxidized RS-SiC sample are obtained by the SEM with high magnification. Based on the theoretical derivation, it can be concluded that the formations of projections and cracks depend on the inner volume expansion force and the resultant force generated from other grains. Research on formation of projections and cracks in anodic oxidation of RS-SiC can promote the process level of RS-SiC products.

  12. Corrosion by liquid lead and lead-bismuth: experimental results review and analysis

    SciTech Connect

    Zhang, Jinsuo

    2008-01-01

    Liquid metal technologies for liquid lead and lead-bismuth alloy are under wide investigation and development for advanced nuclear energy systems and waste transmutation systems. Material corrosion is one of the main issues studied a lot recently in the development of the liquid metal technology. This study reviews corrosion by liquid lead and lead bismuth, including the corrosion mechanisms, corrosion inhibitor and the formation of the protective oxide layer. The available experimental data are analyzed by using a corrosion model in which the oxidation and scale removal are coupled. Based on the model, long-term behaviors of steels in liquid lead and lead-bismuth are predictable. This report provides information for the selection of structural materials for typical nuclear reactor coolant systems when selecting liquid lead or lead bismuth as heat transfer media.

  13. Vapor-phase silanization of oxidized porous silicon for stabilizing composition and photoluminescence

    NASA Astrophysics Data System (ADS)

    Li, Hong-Liang; Zhu, Yingchun; Xu, Dongsheng; Wan, Yong; Xia, Linhua; Zhao, Xiu-song

    2009-06-01

    A vapor-phase deposition approach to the silanization modification of the oxidized porous silicon (PSi) surface using (CH3O)3Si(CH2)3NH2 has been exploited. Standard clean (SC)-1 (NH3H2O/H2O2/H2O, 1:1:5,v/v) and SC-2 [HCl/H2O2/H2O (1:1:6,v/v)] solutions are utilized for the first time to obtain oxidized PSi and have been proved to be a very efficient combination for creating Si-OH species on the PSi surface. After the modification, an amine group terminated surface was successfully created as demonstrated by the contact angle with water, the x-ray photoelectron spectroscopy, and the Fourier transform infrared (FTIR) spectra. The influences of the surface derivatives on the composition stability of the PSi layer and on its photoluminescence properties were investigated by means of FTIR spectra, photoluminescence spectra, and time-resolved photoluminescence measurements.

  14. Boosting the local anodic oxidation of silicon through carbon nanofiber atomic force microscopy probes.

    PubMed

    Rius, Gemma; Lorenzoni, Matteo; Matsui, Soichiro; Tanemura, Masaki; Perez-Murano, Francesc

    2015-01-01

    Many nanofabrication methods based on scanning probe microscopy have been developed during the last decades. Local anodic oxidation (LAO) is one of such methods: Upon application of an electric field between tip and surface under ambient conditions, oxide patterning with nanometer-scale resolution can be performed with good control of dimensions and placement. LAO through the non-contact mode of atomic force microscopy (AFM) has proven to yield a better resolution and tip preservation than the contact mode and it can be effectively performed in the dynamic mode of AFM. The tip plays a crucial role for the LAO-AFM, because it regulates the minimum feature size and the electric field. For instance, the feasibility of carbon nanotube (CNT)-functionalized tips showed great promise for LAO-AFM, yet, the fabrication of CNT tips presents difficulties. Here, we explore the use of a carbon nanofiber (CNF) as the tip apex of AFM probes for the application of LAO on silicon substrates in the AFM amplitude modulation dynamic mode of operation. We show the good performance of CNF-AFM probes in terms of resolution and reproducibility, as well as demonstration that the CNF apex provides enhanced conditions in terms of field-induced, chemical process efficiency.

  15. Boosting the local anodic oxidation of silicon through carbon nanofiber atomic force microscopy probes

    PubMed Central

    Lorenzoni, Matteo; Matsui, Soichiro; Tanemura, Masaki; Perez-Murano, Francesc

    2015-01-01

    Summary Many nanofabrication methods based on scanning probe microscopy have been developed during the last decades. Local anodic oxidation (LAO) is one of such methods: Upon application of an electric field between tip and surface under ambient conditions, oxide patterning with nanometer-scale resolution can be performed with good control of dimensions and placement. LAO through the non-contact mode of atomic force microscopy (AFM) has proven to yield a better resolution and tip preservation than the contact mode and it can be effectively performed in the dynamic mode of AFM. The tip plays a crucial role for the LAO-AFM, because it regulates the minimum feature size and the electric field. For instance, the feasibility of carbon nanotube (CNT)-functionalized tips showed great promise for LAO-AFM, yet, the fabrication of CNT tips presents difficulties. Here, we explore the use of a carbon nanofiber (CNF) as the tip apex of AFM probes for the application of LAO on silicon substrates in the AFM amplitude modulation dynamic mode of operation. We show the good performance of CNF-AFM probes in terms of resolution and reproducibility, as well as demonstration that the CNF apex provides enhanced conditions in terms of field-induced, chemical process efficiency. PMID:25671165

  16. Preparation of silicon carbide-supported vanadium oxide and its application of removing NO by ammonia

    NASA Astrophysics Data System (ADS)

    Wang, Zi-Bo; Xu, Xu; Bai, Shu-Li; Guan, Yu-Jiang; Jiang, Sheng-Tao

    2017-03-01

    The aim of this work was to study the preparation of SiC-supported V2O5 catalysts and the kinetics on selective catalytic reduction for NO with NH3 on the catalysts. Using incipient wetness impregnation methods, vanadium oxide was applied to silicon carbide to prepare a SiC-supported vanadium oxide. X-ray photoelectron spectroscopy analysis confirmed that V2O5 existed in the prepared materials. Using the prepared materials as catalysts, selective catalytic reduction for NO by NH3 has been analyzed, and reaction kinetics on the catalysts was studied at 150-300 °C. The obtained results showed that the reduction reaction on the catalysts is close to zero-order kinetics with respect to NH3, first-order with respect to NO, and half-order to O2. Apparent activation energy for the reduction reaction was found to be 38 kJ mol-1. The prepared materials are stable and reusable.

  17. Gamma Irradiation and Oxidative Degradation of a Silica-Filled Silicone Elastomer

    DOE PAGES

    Labouriau, Andrea; Cady, Carl Mcelhinney; Gill, John T.; ...

    2015-03-21

    The radiation oxidative degradation of a commonly used silica-filled silicone elastomer DC745 was investigated by a series of experimental techniques. This elastomer is known to be chemically and thermally stable, but insufficient data exist on the radiation resistance. In the present work, gamma doses up to 200 kGy were applied under air at RT and 1Gy/s. Radiation chemical changes were investigated by NMR, FT-IR, Raman, and mass spectroscopy. DSC and TGA experiments probed thermal transitions and thermal stability changes with exposure dose. SEM probed variations on the surface of the elastomer, and solvent swelling methods were used to investigate changesmore » in the polymer network properties. Electron paramagnetic resonance was employed to detect and identify free radicals. Uniaxial compression load tests at variable temperatures were performed to assess changes in the material’s mechanical response as a function of radiation dose. Results demonstrate that, with increasing exposure, DC745 undergoes changes in chemistry that lead to an increase in thermal stability and cross-link density, formation of free radical species, decrease in heat of fusion and increase in stiffness at low temperatures. Taken together, these results indicate that oxidative cross-linking is the dominant radiolysis mechanism that occurs when this material is exposed to gamma irradiation in air at high dose rates.« less

  18. Effect of ultraviolet light exposure to boron doped hydrogenated amorphous silicon oxide thin film

    NASA Astrophysics Data System (ADS)

    Baek, Seungsin; Iftiquar, S. M.; Jang, Juyeon; Lee, Sunhwa; Kim, Minbum; Jung, Junhee; Park, Hyeongsik; Park, Jinjoo; Kim, Youngkuk; Shin, Chonghoon; Lee, Youn-Jung; Yi, Junsin

    2012-11-01

    We have investigated the effect of ultraviolet (UV) light exposure to boron doped (p-type) hydrogenated amorphous silicon oxide (p-a-SiO:H) thin semiconductor films by measuring changes in its structural, electrical and optical properties. After a 50 h of UV light soaking (LS) of the films, that have 1.2, 6.9, 15.2, 25.3 at.% oxygen content (C(O)) and optical gap (E04) of 1.897, 2.080, 2.146 and 2.033 eV, show a relative increase in the C(O) by 28.0%, 9.8%, 2.0%, 3.1%, a relative increase in the Urbach energy (Eu) by 42%, 24%, 8%, 0%, decrease in the E04 by 66, 2, 12, 19 meV and the gap state defect density (Nd) show an increase by 6.5%, 3.4%, 0.7%, 0.1%. At higher oxygen content the observed UV light induced degradation (LID) is relatively less than that for films with lower oxygen content, indicating that higher oxides face less changes under the UV light.

  19. Gamma Irradiation and Oxidative Degradation of a Silica-Filled Silicone Elastomer

    SciTech Connect

    Labouriau, Andrea; Cady, Carl Mcelhinney; Gill, John T.; Stull, Jamie Ann; Ortiz-Acosta, Denisse; Henderson, Kevin C.; Hartung, Vaughn; Quintana, Adam; Celina, Mathew C.

    2015-03-21

    The radiation oxidative degradation of a commonly used silica-filled silicone elastomer DC745 was investigated by a series of experimental techniques. This elastomer is known to be chemically and thermally stable, but insufficient data exist on the radiation resistance. In the present work, gamma doses up to 200 kGy were applied under air at RT and 1Gy/s. Radiation chemical changes were investigated by NMR, FT-IR, Raman, and mass spectroscopy. DSC and TGA experiments probed thermal transitions and thermal stability changes with exposure dose. SEM probed variations on the surface of the elastomer, and solvent swelling methods were used to investigate changes in the polymer network properties. Electron paramagnetic resonance was employed to detect and identify free radicals. Uniaxial compression load tests at variable temperatures were performed to assess changes in the material’s mechanical response as a function of radiation dose. Results demonstrate that, with increasing exposure, DC745 undergoes changes in chemistry that lead to an increase in thermal stability and cross-link density, formation of free radical species, decrease in heat of fusion and increase in stiffness at low temperatures. Taken together, these results indicate that oxidative cross-linking is the dominant radiolysis mechanism that occurs when this material is exposed to gamma irradiation in air at high dose rates.

  20. Uncooled Infrared Microbolometers and Silicon Germanium Oxide (SixGe1-xOy) Infrared Sensitive Material for Long Wavelength Detection

    DTIC Science & Technology

    2014-10-10

    Aberle, Crystalline silicon solar cells : advanced surface passivation and analysis / Armin G. Aberle. Sydney :: Centre for Photovoltaic Engineering...Report 15-May-2009- 14-Jan-2013 4. 1ITLE AND SUBTITLE 5a CONTRACT NUMBER Final Report: Uncooled Infi-ared Microbolometers and Silicon W911NF-09-l-0158...This report presents a detailed characterization of infrared sensitive silicon gennanium oxide (SixGeyO 1-x-y) thin films. The results demonstrated

  1. Transparent conducting oxide contacts and textured metal back reflectors for thin film silicon solar cells

    NASA Astrophysics Data System (ADS)

    Franken, R. H.-J.

    2006-09-01

    With the growing population and the increasing environmental problems of the 'common' fossil and nuclear energy production, the need for clean and sustainable energy sources is evident. Solar energy conversion, such as in photovoltaic (PV) systems, can play a major role in the urgently needed energy transition in electricity production. At the present time PV module production is dominated by the crystalline wafer technology. Thin film silicon technology is an alternative solar energy technology that operates at lower efficiencies, however, it has several significant advantages, such as the possibility of deposition on cheap (flexible) substrates and the much smaller silicon material consumption. Because of the small thickness of the solar cells, light trapping schemes are needed in order to obtain enough light absorption and current generation. This thesis describes the research on thin film silicon solar cells with the focus on the optimization of the transparent conducting oxide (TCO) layers and textured metal Ag substrate layers for the use as enhanced light scattering back reflectors in n-i-p type of solar cells. First we analyzed ZnO:Al (TCO) layers deposited in an radio frequent (rf) magnetron deposition system equipped with a 7 inch target. We have focused on the improvement of the electrical properties without sacrificing the optical properties by increasing the mobility and decreasing the grain boundary density. Furthermore, we described some of the effects on light trapping of ZnO:Al enhanced back reflectors. The described effects are able to explain the observed experimental data. Furthermore, we present a relation between the surface morphology of the Ag back contact and the current enhancement in microcrystalline (muc-Si:H) solar cells. We show the importance of the lateral feature sizes of the Ag surface on the light scattering and introduce a method to characterize the quality of the back reflector by combining the vertical and lateral feature sizes

  2. Effect of graphene oxide ratio on the cell adhesion and growth behavior on a graphene oxide-coated silicon substrate

    NASA Astrophysics Data System (ADS)

    Jeong, Jin-Tak; Choi, Mun-Ki; Sim, Yumin; Lim, Jung-Taek; Kim, Gil-Sung; Seong, Maeng-Je; Hyung, Jung-Hwan; Kim, Keun Soo; Umar, Ahmad; Lee, Sang-Kwon

    2016-09-01

    Control of living cells on biocompatible materials or on modified substrates is important for the development of bio-applications, including biosensors and implant biomaterials. The topography and hydrophobicity of substrates highly affect cell adhesion, growth, and cell growth kinetics, which is of great importance in bio-applications. Herein, we investigate the adhesion, growth, and morphology of cultured breast cancer cells on a silicon substrate, on which graphene oxides (GO) was partially formed. By minimizing the size and amount of the GO-containing solution and the further annealing process, GO-coated Si samples were prepared which partially covered the Si substrates. The coverage of GO on Si samples decreases upon annealing. The behaviors of cells cultured on two samples have been observed, i.e. partially GO-coated Si (P-GO) and annealed partially GO-coated Si (Annealed p-GO), with a different coverage of GO. Indeed, the spreading area covered by the cells and the number of cells for a given culture period in the incubator were highly dependent on the hydrophobicity and the presence of oxygenated groups on GO and Si substrates, suggesting hydrophobicity-driven cell growth. Thus, the presented method can be used to control the cell growth via an appropriate surface modification.

  3. Effect of graphene oxide ratio on the cell adhesion and growth behavior on a graphene oxide-coated silicon substrate

    PubMed Central

    Jeong, Jin-Tak; Choi, Mun-Ki; Sim, Yumin; Lim, Jung-Taek; Kim, Gil-Sung; Seong, Maeng-Je; Hyung, Jung-Hwan; Kim, Keun Soo; Umar, Ahmad; Lee, Sang-Kwon

    2016-01-01

    Control of living cells on biocompatible materials or on modified substrates is important for the development of bio-applications, including biosensors and implant biomaterials. The topography and hydrophobicity of substrates highly affect cell adhesion, growth, and cell growth kinetics, which is of great importance in bio-applications. Herein, we investigate the adhesion, growth, and morphology of cultured breast cancer cells on a silicon substrate, on which graphene oxides (GO) was partially formed. By minimizing the size and amount of the GO-containing solution and the further annealing process, GO-coated Si samples were prepared which partially covered the Si substrates. The coverage of GO on Si samples decreases upon annealing. The behaviors of cells cultured on two samples have been observed, i.e. partially GO-coated Si (P-GO) and annealed partially GO-coated Si (Annealed p-GO), with a different coverage of GO. Indeed, the spreading area covered by the cells and the number of cells for a given culture period in the incubator were highly dependent on the hydrophobicity and the presence of oxygenated groups on GO and Si substrates, suggesting hydrophobicity-driven cell growth. Thus, the presented method can be used to control the cell growth via an appropriate surface modification. PMID:27652886

  4. Hexagonal Ag nanoarrays induced enhancement of blue light emission from amorphous oxidized silicon nitride via localized surface plasmon coupling.

    PubMed

    Ma, Zhongyuan; Ni, Xiaodong; Zhang, Wenping; Jiang, Xiaofan; Yang, Huafeng; Yu, Jie; Wang, Wen; Xu, Ling; Xu, Jun; Chen, Kunji; Feng, Duan

    2014-11-17

    A significant enhancement of blue light emission from amorphous oxidized silicon nitride (a-SiNx:O) films is achieved by introduction of ordered and size-controllable arrays of Ag nanoparticles between the silicon substrate and a-SiNx:O films. Using hexagonal arrays of Ag nanoparticles fabricated by nanosphere lithography, the localized surface plasmons (LSPs) resonance can effectively increase the internal quantum efficiency from 3.9% to 13.3%. Theoretical calculation confirms that the electromagnetic field-intensity enhancement is through the dipole surface plasma coupling with the excitons of a-SiNx:O films, which demonstrates a-SiNx:O films with enhanced blue emission are promising for silicon-based light-emitting applications by patterned Ag arrays.

  5. Mineral resource of the month: bismuth

    USGS Publications Warehouse

    Carlin Jr., James F.

    2006-01-01

    Bismuth compounds are most known for their soothing effects on the stomach, wounds and sores. These properties make the compounds an essential part of many medicinal and cosmetic preparations, which until 1930 accounted for about 90 percent of the bismuth used. The subsequent development of low-melting alloys and chemical catalysts containing bismuth, as well as its use as an additive to casting alloys, has resulted in a wider variety of industrial applications for bismuth.

  6. [Synergetic effects of silicon carbide and molecular sieve loaded catalyst on microwave assisted catalytic oxidation of toluene].

    PubMed

    Wang, Xiao-Hui; Bo, Long-Li; Liu, Hai-Nan; Zhang, Hao; Sun, Jian-Yu; Yang, Li; Cai, Li-Dong

    2013-06-01

    Molecular sieve loaded catalyst was prepared by impregnation method, microwave-absorbing material silicon carbide and the catalyst were investigated for catalytic oxidation of toluene by microwave irradiation. Research work examined effects of silicon carbide and molecular sieve loading Cu-V catalyst's mixture ratio as well as mixed approach changes on degradation of toluene, and characteristics of catalyst were measured through scanning electron microscope, specific surface area test and X-ray diffraction analysis. The result showed that the fixed bed reactor had advantages of both thermal storage property and low-temperature catalytic oxidation when 20% silicon carbide was filled at the bottom of the reactor, and this could effectively improve the utilization of microwave energy as well as catalytic oxidation efficiency of toluene. Under microwave power of 75 W and 47 W, complete-combustion temperatures of molecular sieve loaded Cu-V catalyst and Cu-V-Ce catalyst to toluene were 325 degrees C and 160 degrees C, respectively. Characteristics of the catalysts showed that mixture of rare-earth element Ce increased the dispersion of active components in the surface of catalyst, micropore structure of catalyst effectively guaranteed high adsorption capacity for toluene, while amorphous phase of Cu and V oxides increased the activity of catalyst greatly.

  7. Tunnel oxide passivated contacts formed by ion implantation for applications in silicon solar cells

    SciTech Connect

    Reichel, Christian; Feldmann, Frank; Müller, Ralph; Hermle, Martin; Glunz, Stefan W.; Reedy, Robert C.; Lee, Benjamin G.; Young, David L.; Stradins, Paul

    2015-11-28

    Passivated contacts (poly-Si/SiO{sub x}/c-Si) doped by shallow ion implantation are an appealing technology for high efficiency silicon solar cells, especially for interdigitated back contact (IBC) solar cells where a masked ion implantation facilitates their fabrication. This paper presents a study on tunnel oxide passivated contacts formed by low-energy ion implantation into amorphous silicon (a-Si) layers and examines the influence of the ion species (P, B, or BF{sub 2}), the ion implantation dose (5 × 10{sup 14 }cm{sup −2} to 1 × 10{sup 16 }cm{sup −2}), and the subsequent high-temperature anneal (800 °C or 900 °C) on the passivation quality and junction characteristics using double-sided contacted silicon solar cells. Excellent passivation quality is achieved for n-type passivated contacts by P implantations into either intrinsic (undoped) or in-situ B-doped a-Si layers with implied open-circuit voltages (iV{sub oc}) of 725 and 720 mV, respectively. For p-type passivated contacts, BF{sub 2} implantations into intrinsic a-Si yield well passivated contacts and allow for iV{sub oc} of 690 mV, whereas implanted B gives poor passivation with iV{sub oc} of only 640 mV. While solar cells featuring in-situ B-doped selective hole contacts and selective electron contacts with P implanted into intrinsic a-Si layers achieved V{sub oc} of 690 mV and fill factor (FF) of 79.1%, selective hole contacts realized by BF{sub 2} implantation into intrinsic a-Si suffer from drastically reduced FF which is caused by a non-Ohmic Schottky contact. Finally, implanting P into in-situ B-doped a-Si layers for the purpose of overcompensation (counterdoping) allowed for solar cells with V{sub oc} of 680 mV and FF of 80.4%, providing a simplified and promising fabrication process for IBC solar cells featuring passivated contacts.

  8. 21 CFR 73.1162 - Bismuth oxychloride.

    Code of Federal Regulations, 2013 CFR

    2013-04-01

    ... 21 Food and Drugs 1 2013-04-01 2013-04-01 false Bismuth oxychloride. 73.1162 Section 73.1162 Food... COLOR ADDITIVES EXEMPT FROM CERTIFICATION Drugs § 73.1162 Bismuth oxychloride. (a) Identity. (1) The color additive bismuth oxychloride is a synthetically prepared white or nearly white amorphous or...

  9. 21 CFR 73.1162 - Bismuth oxychloride.

    Code of Federal Regulations, 2012 CFR

    2012-04-01

    ... 21 Food and Drugs 1 2012-04-01 2012-04-01 false Bismuth oxychloride. 73.1162 Section 73.1162 Food... COLOR ADDITIVES EXEMPT FROM CERTIFICATION Drugs § 73.1162 Bismuth oxychloride. (a) Identity. (1) The color additive bismuth oxychloride is a synthetically prepared white or nearly white amorphous or...

  10. 21 CFR 73.1162 - Bismuth oxychloride.

    Code of Federal Regulations, 2014 CFR

    2014-04-01

    ... 21 Food and Drugs 1 2014-04-01 2014-04-01 false Bismuth oxychloride. 73.1162 Section 73.1162 Food... COLOR ADDITIVES EXEMPT FROM CERTIFICATION Drugs § 73.1162 Bismuth oxychloride. (a) Identity. (1) The color additive bismuth oxychloride is a synthetically prepared white or nearly white amorphous or...

  11. Room temperature NO2 gas sensing of Au-loaded tungsten oxide nanowires/porous silicon hybrid structure

    NASA Astrophysics Data System (ADS)

    Deng-Feng, Wang; Ji-Ran, Liang; Chang-Qing, Li; Wen-Jun, Yan; Ming, Hu

    2016-02-01

    In this work, we report an enhanced nitrogen dioxide (NO2) gas sensor based on tungsten oxide (WO3) nanowires/porous silicon (PS) decorated with gold (Au) nanoparticles. Au-loaded WO3 nanowires with diameters of 10 nm-25 nm and lengths of 300 nm-500 nm are fabricated by the sputtering method on a porous silicon substrate. The high-resolution transmission electron microscopy (HRTEM) micrographs show that Au nanoparticles are uniformly distributed on the surfaces of WO3 nanowires. The effect of the Au nanoparticles on the NO2-sensing performance of WO3 nanowires/porous silicon is investigated over a low concentration range of 0.2 ppm-5 ppm of NO2 at room temperature (25 °C). It is found that the 10-Å Au-loaded WO3 nanowires/porous silicon-based sensor possesses the highest gas response characteristic. The underlying mechanism of the enhanced sensing properties of the Au-loaded WO3 nanowires/porous silicon is also discussed. Project supported by the National Natural Science Foundation of China (Grant Nos. 61274074 and 61271070) and the Key Research Program of Application Foundation and Advanced Technology of Tianjin, China (Grant No. 11JCZDJC15300).

  12. A Silicon-Based Nanothin Film Solid Oxide Fuel Cell Array with Edge Reinforced Support for Enhanced Thermal Mechanical Stability.

    PubMed

    Baek, Jong Dae; Yu, Chen-Chiang; Su, Pei-Chen

    2016-04-13

    A silicon-based micro-solid oxide fuel cell (μ-SOFC) with electrolyte membrane array embedded in a thin silicon supporting membrane, featuring a unique edge reinforcement structure, was demonstrated by utilizing simple silicon micromachining processes. The square silicon supporting membrane, fabricated by combining deep reactive ion etching and through-wafer wet etching processes, has thicker edges and corners than the center portion of the membrane, which effectively improved the mechanical stability of the entire fuel cell array during cell fabrication and cell operation. The 20 μm thick single crystalline silicon membrane supports a large number of 80 nm thick free-standing yttria-stabilized zirconia (YSZ) electrolytes. The fuel cell array was stably maintained at the open circuit voltage (OCV) of 1.04 V for more than 30 h of operation at 350 °C. A high peak power density of 317 mW/cm(2) was obtained at 400 °C. During a rigorous in situ thermal cycling between 150 and 400 °C at a fast cooling and heating rate of 25 °C/min, the OCV of the μ-SOFC recovered to its high value of 1.07 V without any drop caused by membrane failure, which justifies the superior thermal stability of this novel cell architecture.

  13. Cobalt-silicon mixed oxide nanocomposites by modified sol-gel method

    SciTech Connect

    Esposito, Serena; Turco, Maria; Ramis, Gianguido; Bagnasco, Giovanni; Pernice, Pasquale; Pagliuca, Concetta; Bevilacqua, Maria; Aronne, Antonio

    2007-12-15

    Cobalt-silicon mixed oxide materials (Co/Si=0.111, 0.250 and 0.428) were synthesised starting from Co(NO{sub 3}){sub 2}.6H{sub 2}O and Si(OC{sub 2}H{sub 5}){sub 4} using a modified sol-gel method. Structural, textural and surface chemical properties were investigated by thermogravimetric/differential thermal analyses (TG/DTA), XRD, UV-vis, FT-IR spectroscopy and N{sub 2} adsorption at -196 deg. C. The nature of cobalt species and their interactions with the siloxane matrix were strongly depending on both the cobalt loading and the heat treatment. All dried gels were amorphous and contained Co{sup 2+} ions forming both tetrahedral and octahedral complexes with the siloxane matrix. After treatment at 400 deg. C, the sample with lowest Co content appeared amorphous and contained only Co{sup 2+} tetrahedral complexes, while at higher cobalt loading Co{sub 3}O{sub 4} was present as the only crystalline phase, besides Co{sup 2+} ions strongly interacting with siloxane matrix. At 850 deg. C, in all samples crystalline Co{sub 2}SiO{sub 4} was formed and was the only crystallising phase for the nanocomposite with the lowest cobalt content. All materials retained high surface areas also after treatments at 600 deg. C and exhibited surface Lewis acidity, due to cationic sites. The presence of cobalt affected the textural properties of the siloxane matrix decreasing microporosity and increasing mesoporosity. - Graphical abstract: Highly dispersed cobalt-silicon mixed oxide nanocomposites (Co/Si=0.111, 0.250 and 0.428) were obtained by a modified sol-gel method using almost solely aqueous solutions. The nature of cobalt species and their interactions with the siloxane matrix are strongly depending on both the cobalt loading and the heat treatment. All materials retained high surface areas also after treatments at 600 deg. C and exhibited surface Lewis acidity.

  14. Electronic devices containing switchably conductive silicon oxides as a switching element and methods for production and use thereof

    DOEpatents

    Tour, James M.; Yao, Jun; Natelson, Douglas; Zhong, Lin; He, Tao

    2015-09-08

    In various embodiments, electronic devices containing switchably conductive silicon oxide as a switching element are described herein. The electronic devices are two-terminal devices containing a first electrical contact and a second electrical contact in which at least one of the first electrical contact or the second electrical contact is deposed on a substrate to define a gap region therebetween. A switching layer containing a switchably conductive silicon oxide resides in the gap region between the first electrical contact and the second electrical contact. The electronic devices exhibit hysteretic current versus voltage properties, enabling their use in switching and memory applications. Methods for configuring, operating and constructing the electronic devices are also presented herein.

  15. Electronic devices containing switchably conductive silicon oxides as a switching element and methods for production and use thereof

    DOEpatents

    Tour, James M; Yao, Jun; Natelson, Douglas; Zhong, Lin; He, Tao

    2013-11-26

    In various embodiments, electronic devices containing switchably conductive silicon oxide as a switching element are described herein. The electronic devices are two-terminal devices containing a first electrical contact and a second electrical contact in which at least one of the first electrical contact or the second electrical contact is deposed on a substrate to define a gap region therebetween. A switching layer containing a switchably conductive silicon oxide resides in the the gap region between the first electical contact and the second electrical contact. The electronic devices exhibit hysteretic current versus voltage properties, enabling their use in switching and memory applications. Methods for configuring, operating and constructing the electronic devices are also presented herein.

  16. Zinc tin oxide as high-temperature stable recombination layer for mesoscopic perovskite/silicon monolithic tandem solar cells

    NASA Astrophysics Data System (ADS)

    Werner, Jérémie; Walter, Arnaud; Rucavado, Esteban; Moon, Soo-Jin; Sacchetto, Davide; Rienaecker, Michael; Peibst, Robby; Brendel, Rolf; Niquille, Xavier; De Wolf, Stefaan; Löper, Philipp; Morales-Masis, Monica; Nicolay, Sylvain; Niesen, Bjoern; Ballif, Christophe

    2016-12-01

    Perovskite/crystalline silicon tandem solar cells have the potential to reach efficiencies beyond those of silicon single-junction record devices. However, the high-temperature process of 500 °C needed for state-of-the-art mesoscopic perovskite cells has, so far, been limiting their implementation in monolithic tandem devices. Here, we demonstrate the applicability of zinc tin oxide as a recombination layer and show its electrical and optical stability at temperatures up to 500 °C. To prove the concept, we fabricate monolithic tandem cells with mesoscopic top cell with up to 16% efficiency. We then investigate the effect of zinc tin oxide layer thickness variation, showing a strong influence on the optical interference pattern within the tandem device. Finally, we discuss the perspective of mesoscopic perovskite cells for high-efficiency monolithic tandem solar cells.

  17. Very high-cycle fatigue failure in micron-scale polycrystalline silicon films: Effects of environment and surface oxide thickness

    NASA Astrophysics Data System (ADS)

    Alsem, D. H.; Timmerman, R.; Boyce, B. L.; Stach, E. A.; De Hosson, J. Th. M.; Ritchie, R. O.

    2007-01-01

    Fatigue failure in micron-scale polycrystalline silicon structural films, a phenomenon that is not observed in bulk silicon, can severely impact the durability and reliability of microelectromechanical system devices. Despite several studies on the very high-cycle fatigue behavior of these films (up to 1012cycles), there is still an on-going debate on the precise mechanisms involved. We show here that for devices fabricated in the multiuser microelectromechanical system process (MUMPs) foundry and Sandia Ultra-planar, Multi-level MEMS Technology (SUMMiT V™) process and tested under equi-tension/compression loading at ˜40kHz in different environments, stress-lifetime data exhibit similar trends in fatigue behavior in ambient room air, shorter lifetimes in higher relative humidity environments, and no fatigue failure at all in high vacuum. The transmission electron microscopy of the surface oxides in the test samples shows a four- to sixfold thickening of the surface oxide at stress concentrations after fatigue failure, but no thickening after overload fracture in air or after fatigue cycling in vacuo. We find that such oxide thickening and premature fatigue failure (in air) occur in devices with initial oxide thicknesses of ˜4nm (SUMMiT V™) as well as in devices with much thicker initial oxides ˜20nm (MUMPs). Such results are interpreted and explained by a reaction-layer fatigue mechanism. Specifically, moisture-assisted subcritical cracking within a cyclic stress-assisted thickened oxide layer occurs until the crack reaches a critical size to cause catastrophic failure of the entire device. The entirety of the evidence presented here strongly indicates that the reaction-layer fatigue mechanism is the governing mechanism for fatigue failure in micron-scale polycrystalline silicon thin films.

  18. Effects of silicon nanostructure evolution on Er{sup 3+} luminescence in silicon-rich silicon oxide/Er-doped silica multilayers

    SciTech Connect

    Chang, Jee Soo; Jhe, Ji-Hong; Yang, Moon-Seung; Shin, Jung H.; Kim, Kyung Joong; Moon, Dae Won

    2006-10-30

    The effect of silicon nanostructure evolution on Er{sup 3+} luminescence is investigated by using multilayers of 2.5 nm thin SiO{sub x} (x<2) and 10 nm thin Er-doped silica (SiO{sub 2}:Er). By separating excess Si and Er atoms into separate, nanometer-thin layers, the effect of silicon nanostructure evolution on np-Si sensitized Er{sup 3+} luminescence could be investigated while keeping the microscopic Er{sup 3+} environment the same. The authors find that while the presence of np-Si is necessary for efficient sensitization, the overall quality of np-Si layer has little effect on the Er{sup 3+} luminescence. On the other hand, intrusion of np-Si into Er-doped silica layers leads to deactivation of np-Si/Er{sup 3+} interaction, suggesting that there is a limit to excess Si and Er contents that can be used.

  19. Third order nonlinear optical properties of bismuth zinc borate glasses

    SciTech Connect

    Shanmugavelu, B.; Ravi Kanth Kumar, V. V.; Kuladeep, R.; Narayana Rao, D.

    2013-12-28

    Third order nonlinear optical characterization of bismuth zinc borate glasses are reported here using different laser pulse durations. Bismuth zinc borate glasses with compositions xBi{sub 2}O{sub 3}-30ZnO-(70-x) B{sub 2}O{sub 3} (where x = 30, 35, 40, and 45 mol. %) have been prepared by melt quenching method. These glasses were characterized by Raman, UV-Vis absorption, and Z scan measurements. Raman and UV-Vis spectroscopic results indicate that non-bridging oxygens increase with increase of bismuth content in the glass. Nonlinear absorption and refraction behavior in the nanosecond (ns), picosecond (ps), and femtosecond (fs) time domains were studied in detail. Strong reverse saturable absorption due to dominant two-photon absorption (TPA) was observed with both ps and fs excitations. In the case of ns pulse excitations, TPA and free-carrier absorption processes contribute for the nonlinear absorption. Two-photon absorption coefficient (β) and the absorption cross section due to free carriers (σ{sub e}) are estimated by theoretical fit of the open aperture Z-scan measurements and found to be dependent on the amount of bismuth oxide in the glass composition. In both ns and fs regimes the sign and magnitude of the third order nonlinearity are evaluated, and the optical limiting characteristics are also reported.

  20. Efficient and stable photo-oxidation of water by a bismuth vanadate photoanode coupled with an iron oxyhydroxide oxygen evolution catalyst.

    PubMed

    Seabold, Jason A; Choi, Kyoung-Shin

    2012-02-01

    BiVO(4) films were prepared by a simple electrodeposition and annealing procedure and studied as oxygen evolving photoanodes for application in a water splitting photoelectrochemical cell. The resulting BiVO(4) electrodes maintained considerable photocurrent for photo-oxidation of sulfite, but generated significantly reduced photocurrent for photo-oxidation of water to oxygen, also decaying over time, suggesting that the photoelectrochemical performance of BiVO(4) for water oxidation is mainly limited by its poor catalytic ablity to oxidize water. In order to improve the water oxidation kinetics of the BiVO(4) electrode, a layer of FeOOH was placed on the BiVO(4) surface as an oxygen evolution catalyst using a new photodeposition route. The resulting BiVO(4)/FeOOH photoanode exhibitied significantly improved photocurrent and stability for photo-oxidation of water, which is one of the best among all oxide-based phoatoanode systems reported to date. In particular, the BiVO(4)/FeOOH photoanode showed an outstanding performance in the low bias region (i.e., E < 0.8 V vs RHE), which is critical in determining the overall operating current density when assembling a complete p-n photoelectrochemical diode cell. The photocurrent-to-O(2) conversion efficiency of the BiVO(4)/FeOOH photoanode is ca. 96%, confirming that the photogenerated holes in the BiVO(4)/FeOOH photoanode are indeed excusively used for O(2) evolution.

  1. Research on optimal process parameters in thermally oxidation-assisted polishing of reaction-sintered silicon carbide

    NASA Astrophysics Data System (ADS)

    Shen, Xinmin; Yamamura, Kazuya; Zhang, Xiaonan; Zhang, Xiangpo; Wang, Dong; Peng, Kang

    2016-10-01

    Reaction-sintered silicon carbide (RS-SiC) has been widely used in space telescope systems for its excellent physical and mechanical properties. Thermally oxidation-assisted polishing is a practical machining method to obtain RS-SiC parts with high precision, and the research focus is optimization of process parameters, because there are bumpy structures on the oxidized RS-SiC. By atomic force microscopy (AFM) detection, the distributions of oxides on the oxidized RS-SiC sample are quantitative analyzed when the thermal oxidation time is 5min, 30min, and 60min, and the calculated average differences of oxide heights between the initial Si grains and SiC grains are 10.7nm, 25.1nm, and 35.2nm, respectively. Meanwhile, the volume expansion coefficient in oxidation of Si/SiC to SiO2 is 2.257 and 2.194, respectively. Through theoretical derivation based on the Deal-Grove model, the numerical relationship between differences of oxide heights and thermal oxidation time is obtained. Combining with the material removal rate of oxide by ceria slurry in the abrasive polishing, the obtained surface quality can be precisely forecasted and controlled. The oxidized RS-SiC sample, when the oxidation time is 30min, is polished with different times to verify the theoretical analysis results. When the polishing times are 20min, 30min, and 40min, the obtained differences of oxide heights by the AFM detection are consistent with theoretical calculated results. Research on the optimal process parameters in thermally oxidation-assisted polishing of RS-SiC can improve the process level of RS-SiC sample and promote the application of SiC parts.

  2. Bismuth Passivation Technique for High-Resolution X-Ray Detectors

    NASA Technical Reports Server (NTRS)

    Chervenak, James; Hess, Larry

    2013-01-01

    The Athena-plus team requires X-ray sensors with energy resolution of better than one part in 3,000 at 6 keV X-rays. While bismuth is an excellent material for high X-ray stopping power and low heat capacity (for large signal when an X-ray is stopped by the absorber), oxidation of the bismuth surface can lead to electron traps and other effects that degrade the energy resolution. Bismuth oxide reduction and nitride passivation techniques analogous to those used in indium passivation are being applied in a new technique. The technique will enable improved energy resolution and resistance to aging in bismuth-absorber-coupled X-ray sensors. Elemental bismuth is lithographically integrated into X-ray detector circuits. It encounters several steps where the Bi oxidizes. The technology discussed here will remove oxide from the surface of the Bi and replace it with nitridized surface. Removal of the native oxide and passivating to prevent the growth of the oxide will improve detector performance and insulate the detector against future degradation from oxide growth. Placing the Bi coated sensor in a vacuum system, a reduction chemistry in a plasma (nitrogen/hydrogen (N2/H2) + argon) is used to remove the oxide and promote nitridization of the cleaned Bi surface. Once passivated, the Bi will perform as a better X-ray thermalizer since energy will not be trapped in the bismuth oxides on the surface. A simple additional step, which can be added at various stages of the current fabrication process, can then be applied to encapsulate the Bi film. After plasma passivation, the Bi can be capped with a non-diffusive layer of metal or dielectric. A non-superconducting layer is required such as tungsten or tungsten nitride (WNx).

  3. Nanostructured Indium Oxide Coated Silicon Nanowire Arrays: A Hybrid Photothermal/Photochemical Approach to Solar Fuels.

    PubMed

    Hoch, Laura B; O'Brien, Paul G; Jelle, Abdinoor; Sandhel, Amit; Perovic, Douglas D; Mims, Charles A; Ozin, Geoffrey A

    2016-09-27

    The field of solar fuels seeks to harness abundant solar energy by driving useful molecular transformations. Of particular interest is the photodriven conversion of greenhouse gas CO2 into carbon-based fuels and chemical feedstocks, with the ultimate goal of providing a sustainable alternative to traditional fossil fuels. Nonstoichiometric, hydroxylated indium oxide nanoparticles, denoted In2O3-x(OH)y, have been shown to function as active photocatalysts for CO2 reduction to CO via the reverse water gas shift reaction under simulated solar irradiation. However, the relatively wide band gap (2.9 eV) of indium oxide restricts the portion of the solar irradiance that can be utilized to ∼9%, and the elevated reaction temperatures required (150-190 °C) reduce the overall energy efficiency of the process. Herein we report a hybrid catalyst consisting of a vertically aligned silicon nanowire (SiNW) support evenly coated by In2O3-x(OH)y nanoparticles that utilizes the vast majority of the solar irradiance to simultaneously produce both the photogenerated charge carriers and heat required to reduce CO2 to CO at a rate of 22.0 μmol·gcat(-1)·h(-1). Further, improved light harvesting efficiency of the In2O3-x(OH)y/SiNW films due to minimized reflection losses and enhanced light trapping within the SiNW support results in a ∼6-fold increase in photocatalytic conversion rates over identical In2O3-x(OH)y films prepared on roughened glass substrates. The ability of this In2O3-x(OH)y/SiNW hybrid catalyst to perform the dual function of utilizing both light and heat energy provided by the broad-band solar irradiance to drive CO2 reduction reactions represents a general advance that is applicable to a wide range of catalysts in the field of solar fuels.

  4. Characterization of hybrid cobalt-porous silicon systems: protective effect of the Matrix in the metal oxidation

    PubMed Central

    2012-01-01

    In the present work, the characterization of cobalt-porous silicon (Co-PSi) hybrid systems is performed by a combination of magnetic, spectroscopic, and structural techniques. The Co-PSi structures are composed by a columnar matrix of PSi with Co nanoparticles embedded inside, as determined by Transmission Electron Microscopy (TEM). The oxidation state, crystalline structure, and magnetic behavior are determined by X-Ray Absorption Spectroscopy (XAS) and Alternating Gradient Field Magnetometry (AGFM). Additionally, the Co concentration profile inside the matrix has been studied by Rutherford Backscattering Spectroscopy (RBS). It is concluded that the PSi matrix can be tailored to provide the Co nanoparticles with extra protection against oxidation. PMID:22938050

  5. Fabrication of silicon nanowire/poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate)-graphene oxide hybrid solar cells

    NASA Astrophysics Data System (ADS)

    Uma, Kasimayan; Subramani, Thiyagu; Syu, Hong-Jhang; Lin, Tzu-Ching; Lin, Ching-Fuh

    2015-03-01

    Silicon nanowire (SiNW)/Poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) Schottky junctions have shown great promise as high efficiency, cost effective solar cells. Here, hybrid SiNWs/PEDOT:PSS blended graphene oxide (GO) solar cells are prepared and investigated. The SiNWs/PEDOT:PSS blended GO cells show enhanced light trapping and a large junction area when compared to pure PEDOT:PSS structures. SiNWs combined with GO solar cells show energy conversion efficiencies of up to 9.57% under the AM 1.5G condition, opening the possibility of using semiconductor/graphene oxide in photovoltaic applications.

  6. Permeation mechanisms of pulsed microwave plasma deposited silicon oxide films for food packaging applications

    NASA Astrophysics Data System (ADS)

    Deilmann, Michael; Grabowski, Mirko; Theiß, Sebastian; Bibinov, Nikita; Awakowicz, Peter

    2008-07-01

    Silicon oxide barrier layers are deposited on polyethylene terephthalate as permeation barriers for food packaging applications by means of a low pressure microwave plasma. Hexamethyldisiloxane (HMDSO) and oxygen are used as process gases to deposit SiOx coatings via pulsed low pressure plasmas. The layer composition of the coating is investigated by Fourier transform infrared spectroscopy and energy dispersive x-ray spectroscopy to show correlations with barrier properties of the films. The oxygen permeation barrier is determined by the carrier gas method using an electrochemical detector. The transition from low to high barrier films is mapped by the transition from organic SiOxCyHz layers to quartz-like SiO1.7 films containing silanol bound hydrogen. A residual permeation as low as J = 1 ± 0.3 cm3 m-2 day-1 bar-1 is achieved, which is a good value for food packaging applications. Additionally, the activation energy Ep of oxygen permeation is analysed and a strong increase from Ep = 31.5 kJ mol-1 for SiOx CyHz-like coatings to Ep = 53.7 kJ mol-1 for SiO1.7 films is observed by increasing the oxygen dilution of HMDSO:O2 plasma. The reason for the residual permeation of high barrier films is discussed and coating defects are visualized by capacitively coupled atomic oxygen plasma etching of coated substrates. A defect density of 3000 mm-2 is revealed.

  7. Demonstration of Synaptic Behaviors and Resistive Switching Characterizations by Proton Exchange Reactions in Silicon Oxide

    PubMed Central

    Chang, Yao-Feng; Fowler, Burt; Chen, Ying-Chen; Zhou, Fei; Pan, Chih-Hung; Chang, Ting-Chang; Lee, Jack C.

    2016-01-01

    We realize a device with biological synaptic behaviors by integrating silicon oxide (SiOx) resistive switching memory with Si diodes. Minimal synaptic power consumption due to sneak-path current is achieved and the capability for spike-induced synaptic behaviors is demonstrated, representing critical milestones for the use of SiO2–based materials in future neuromorphic computing applications. Biological synaptic behaviors such as long-term potentiation (LTP), long-term depression (LTD) and spike-timing dependent plasticity (STDP) are demonstrated systematically using a comprehensive analysis of spike-induced waveforms, and represent interesting potential applications for SiOx-based resistive switching materials. The resistive switching SET transition is modeled as hydrogen (proton) release from (SiH)2 to generate the hydrogen bridge defect, and the RESET transition is modeled as an electrochemical reaction (proton capture) that re-forms (SiH)2. The experimental results suggest a simple, robust approach to realize programmable neuromorphic chips compatible with large-scale CMOS manufacturing technology. PMID:26880381

  8. Nanoporous and highly active silicon carbide supported CeO₂-catalysts for the methane oxidation reaction.

    PubMed

    Hoffmann, Claudia; Biemelt, Tim; Lohe, Martin R; Rümmeli, Mark H; Kaskel, Stefan

    2014-01-29

    CeOx @SiO2 nanoparticles are used for the first time for the generation of porous SiC materials with tailored pore diameter in the mesopore range containing encapsulated and catalytically active CeO2 nanoparticles. The nanocasting approach with a preceramic polymer and subsequent pyrolysis is performed at 1300 °C, selective leaching of the siliceous part results in CeOx /SiC catalysts with remarkable characteristics like monodisperse, spherical pores and specific surface areas of up to 438 m(2) ·g(-1) . Porous SiC materials are promising supports for high temperature applications. The catalysts show excellent activities in the oxidation of methane with onset temperatures of the reaction 270 K below the onset of the homogeneous reaction. The synthesis scheme using core-shell particles is suited to functionalize silicon carbide with a high degree of stabilization of the active nanoparticles against sintering in the core of the template even at pyrolysis temperatures of 1300 °C rendering the novel synthesis principle as an attractive approach for a wide range of catalytic reactions.

  9. Performance enhancement of ITO/oxide/semiconductor MOS-structure silicon solar cells with voltage biasing

    PubMed Central

    2014-01-01

    In this study, we demonstrate the photovoltaic performance enhancement of a p-n junction silicon solar cell using a transparent-antireflective ITO/oxide film deposited on the spacing of the front-side finger electrodes and with a DC voltage applied on the ITO-electrode. The depletion width of the p-n junction under the ITO-electrode was induced and extended while the absorbed volume and built-in electric field were also increased when the biasing voltage was increased. The photocurrent and conversion efficiency were increased because more photo-carriers are generated in a larger absorbed volume and because the carriers transported and collected more effectively due to higher biasing voltage effects. Compared to a reference solar cell (which was biased at 0 V), a conversion efficiency enhancement of 26.57% (from 12.42% to 15.72%) and short-circuit current density enhancement of 42.43% (from 29.51 to 42.03 mA/cm2) were obtained as the proposed MOS-structure solar cell biased at 2.5 V. In addition, the capacitance-volt (C-V) measurement was also used to examine the mechanism of photovoltaic performance enhancement due to the depletion width being enlarged by applying a DC voltage on an ITO-electrode. PMID:25593550

  10. Attachment of 3-(Aminopropyl)triethoxysilane on silicon oxide surfaces: dependence on solution temperature.

    PubMed

    Pasternack, Robert M; Rivillon Amy, Sandrine; Chabal, Yves J

    2008-11-18

    Parameters important to the self-assembly of 3-(aminopropyl)triethoxysilane (APTES) on chemically grown silicon oxide (SiO 2) to form an aminopropyl silane (APS) film have been investigated using in situ infrared (IR) absorption spectroscopy. Preannealing to approximately 70 degrees C produces significant improvements in the quality of the film: the APS film is denser, and the Si-O-Si bonds between the molecules and the SiO 2 surface are more structured and ordered with only a limited number of remaining unreacted ethoxy groups. In contrast, post-annealing the functionalized SiO 2 samples after room temperature reaction with APTES (i.e., ex situ annealing) does not lead to any spectral change, suggesting that post-annealing has no strong effect on the horizontal polymerization as suggested earlier. Both IR and ellipsometry data show that the higher the solution temperature, the denser and thinner the APS layer is for a given immersion time. Finally, the APS layer obtained by preannealing the solution at 70 degrees C exhibits a better stability in deionized water than the APS layer prepared at room temperature.

  11. Performance enhancement of ITO/oxide/semiconductor MOS-structure silicon solar cells with voltage biasing.

    PubMed

    Ho, Wen-Jeng; Huang, Min-Chun; Lee, Yi-Yu; Hou, Zhong-Fu; Liao, Changn-Jyun

    2014-01-01

    In this study, we demonstrate the photovoltaic performance enhancement of a p-n junction silicon solar cell using a transparent-antireflective ITO/oxide film deposited on the spacing of the front-side finger electrodes and with a DC voltage applied on the ITO-electrode. The depletion width of the p-n junction under the ITO-electrode was induced and extended while the absorbed volume and built-in electric field were also increased when the biasing voltage was increased. The photocurrent and conversion efficiency were increased because more photo-carriers are generated in a larger absorbed volume and because the carriers transported and collected more effectively due to higher biasing voltage effects. Compared to a reference solar cell (which was biased at 0 V), a conversion efficiency enhancement of 26.57% (from 12.42% to 15.72%) and short-circuit current density enhancement of 42.43% (from 29.51 to 42.03 mA/cm(2)) were obtained as the proposed MOS-structure solar cell biased at 2.5 V. In addition, the capacitance-volt (C-V) measurement was also used to examine the mechanism of photovoltaic performance enhancement due to the depletion width being enlarged by applying a DC voltage on an ITO-electrode.

  12. Demonstration of Synaptic Behaviors and Resistive Switching Characterizations by Proton Exchange Reactions in Silicon Oxide

    NASA Astrophysics Data System (ADS)

    Chang, Yao-Feng; Fowler, Burt; Chen, Ying-Chen; Zhou, Fei; Pan, Chih-Hung; Chang, Ting-Chang; Lee, Jack C.

    2016-02-01

    We realize a device with biological synaptic behaviors by integrating silicon oxide (SiOx) resistive switching memory with Si diodes. Minimal synaptic power consumption due to sneak-path current is achieved and the capability for spike-induced synaptic behaviors is demonstrated, representing critical milestones for the use of SiO2–based materials in future neuromorphic computing applications. Biological synaptic behaviors such as long-term potentiation (LTP), long-term depression (LTD) and spike-timing dependent plasticity (STDP) are demonstrated systematically using a comprehensive analysis of spike-induced waveforms, and represent interesting potential applications for SiOx-based resistive switching materials. The resistive switching SET transition is modeled as hydrogen (proton) release from (SiH)2 to generate the hydrogen bridge defect, and the RESET transition is modeled as an electrochemical reaction (proton capture) that re-forms (SiH)2. The experimental results suggest a simple, robust approach to realize programmable neuromorphic chips compatible with large-scale CMOS manufacturing technology.

  13. Silicon-on-insulator-based complementary metal oxide semiconductor integrated optoelectronic platform for biomedical applications

    NASA Astrophysics Data System (ADS)

    Mujeeb-U-Rahman, Muhammad; Scherer, Axel

    2016-12-01

    Microscale optical devices enabled by wireless power harvesting and telemetry facilitate manipulation and testing of localized biological environments (e.g., neural recording and stimulation, targeted delivery to cancer cells). Design of integrated microsystems utilizing optical power harvesting and telemetry will enable complex in vivo applications like actuating a single nerve, without the difficult requirement of extreme optical focusing or use of nanoparticles. Silicon-on-insulator (SOI)-based platforms provide a very powerful architecture for such miniaturized platforms as these can be used to fabricate both optoelectronic and microelectronic devices on the same substrate. Near-infrared biomedical optics can be effectively utilized for optical power harvesting to generate optimal results compared with other methods (e.g., RF and acoustic) at submillimeter size scales intended for such designs. We present design and integration techniques of optical power harvesting structures with complementary metal oxide semiconductor platforms using SOI technologies along with monolithically integrated electronics. Such platforms can become the basis of optoelectronic biomedical systems including implants and lab-on-chip systems.

  14. Covalent immobilization of β-1,4-glucosidase from Agaricus arvensis onto functionalized silicon oxide nanoparticles.

    PubMed

    Singh, Raushan Kumar; Zhang, Ye-Wang; Nguyen, Ngoc-Phuong-Thao; Jeya, Marimuthu; Lee, Jung-Kul

    2011-01-01

    An efficient β-1,4-glucosidase (BGL) secreting strain, Agaricus arvensis, was isolated and identified. The relative molecular weight of the purified A. arvensis BGL was 98 kDa, as determined by sodium dodecylsulfate polyacrylamide gel electrophoresis, or 780 kDa by size exclusion chromatography, indicating that the enzyme is an octamer. Using a crude enzyme preparation, A. arvensis BGL was covalently immobilized onto functionalized silicon oxide nanoparticles with an immobilization efficiency of 158%. The apparent V (max) (k (cat)) values of free and immobilized BGL under standard assay conditions were 3,028 U mg protein(-1) (4,945 s(-1)) and 3,347 U mg protein(-1) (5,466 s(-1)), respectively. The immobilized BGL showed a higher optimum temperature and improved thermostability as compared to the free enzyme. The half-life at 65 °C showed a 288-fold improvement over the free BGL. After 25 cycles, the immobilized enzyme still retained 95% of the original activity, thus demonstrating its prospects for commercial applications. High specific activity, high immobilization efficiency, improved stability, and reusability of A. arvensis BGL make this enzyme of potential interest in a number of industrial applications.

  15. Investigations of nanocomposite magnetic materials based on the oxides of iron, nickel, cobalt and silicon dioxide

    NASA Astrophysics Data System (ADS)

    Gracheva, Irina E.; Olchowik, Grazyna; Gareev, Kamil G.; Moshnikov, Vyatcheslav A.; Kuznetsov, Vladimir V.; Olchowik, Jan M.

    2013-05-01

    This paper is concerned with the study of magnetic nanocomposites containing silicon, iron, nickel, and cobalt oxides. These materials were produced in the form of thin films based on Fe-Si-O, Ni-Co-Si-O and Fe-Ni-Co-Si-O systems and powders based on Fe-Si-O, Ni-Si-O, Co-Si-O and Fe-Ni-Co-Si-O systems using sol-gel technology, through centrifugation, and deposition of ammonia solution. The morphology and magnetic properties of materials in the form of thin films were studied by using the atomic force microscopy. The phase composition, specific surface area and magnetic properties of materials in the form of powders were studied by using the X-ray phase analysis, thermal desorption, vibrational magnetometry and immittance measurements. The dependencies of the main parameters were derived for the magnetic materials from their structure and manufacturing conditions. Ways to optimise the technological processes were proposed, aimed at reducing the size of the magnetic particles in an amorphous lattice.

  16. Improvement of electron emission characteristics of porous silicon emitter by using cathode reduction and electrochemical oxidation

    NASA Astrophysics Data System (ADS)

    Li, He; Wenjiang, Wang; Xiaoning, Zhang

    2017-03-01

    A new simple and convenient post-treat technique combined the cathode reduction (CR) and electrochemical oxidation (ECO) was proposed to improve the electron emission properties of the surface-emitting cold cathodes based on the porous silicon (PS). It is demonstrated here that by introducing this new technique combined CR and ECO, the emission properties of the diode have been significantly improved than those as-prepared samples. The experimental results showed that the emission current densities and efficiencies of sample treated by CR were 62 μA/cm2 and 12.10‰, respectively, nearly 2 orders of magnitude higher than those of as-prepared sample. Furthermore, the CR-treated PS emitter shows higher repeatability and stability compared with the as-prepared PS emitter. The scanning electron microscope (SEM), atomic force microscope (AFM), energy dispersive spectrometer (EDS), furier transformed infrared (FTIR) spectroscopy results indicated that the improved mechanism is mainly due to the passivation of the PS, which not only improve the PS morphology by the passivation of the H+ but also improve the uniformity of the oxygen content distribution in the whole PS layer. Therefore, the method combined the CR treatment and ECO is expected to be a valuable technique to enhance the electron emission characteristics of the PS emitter.

  17. PROCESS USING BISMUTH PHOSPHATE AS A CARRIER PRECIPITATE FOR FISSION PRODUCTS AND PLUTONIUM VALUES

    DOEpatents

    Finzel, T.G.

    1959-03-10

    A process is described for separating plutonium from fission products carried therewith when plutonium in the reduced oxidation state is removed from a nitric acid solution of irradiated uranium by means of bismuth phosphate as a carrier precipitate. The bismuth phosphate carrier precipitate is dissolved by treatment with nitric acid and the plutonium therein is oxidized to the hexavalent oxidation state by means of potassium dichromate. Separation of the plutonium from the fission products is accomplished by again precipitating bismuth phosphate and removing the precipitate which now carries the fission products and a small percentage of the plutonium present. The amount of plutonium carried in this last step may be minimized by addition of sodium fluoride, so as to make the solution 0.03N in NaF, prior to the oxidation and prccipitation step.

  18. D-penicillamine does not increase urinary bismuth excretion in patients treated with tripotassium dicitrato bismuthate.

    PubMed

    Nwokolo, C U; Pounder, R E

    1990-10-01

    Twenty-four urinary bismuth excretion was measured in five patients who had been treated with tripotassium dicitrato bismuthate, before and after single 1 g oral dose of D-penicillamine. Before dosing with D-penicillamine, the median 24 h urinary bismuth output was 55 micrograms 24 h-1 (range 17-156 micrograms 24 h-1) and following dosing with D-penicillamine the median 24 h urinary bismuth output was 53 micrograms 24 h-1 (range 12-156 micrograms 24 h-1). D-penicillamine does not facilitate the urinary excretion of bismuth, hence it is unsuitable for use as an oral chelator in patients with bismuth intoxication.

  19. Island growth in the atomic layer deposition of zirconium oxide and aluminum oxide on hydrogen-terminated silicon: Growth mode modeling and transmission electron microscopy

    NASA Astrophysics Data System (ADS)

    Puurunen, Riikka L.; Vandervorst, Wilfried; Besling, Wim F. A.; Richard, Olivier; Bender, Hugo; Conard, Thierry; Zhao, Chao; Delabie, Annelies; Caymax, Matty; De Gendt, Stefan; Heyns, Marc; Viitanen, Minna M.; de Ridder, Marco; Brongersma, Hidde H.; Tamminga, Yde; Dao, Thuy; de Win, Toon; Verheijen, Marcel; Kaiser, Monja; Tuominen, Marko

    2004-11-01

    Atomic layer deposition (ALD) is used in applications where inorganic material layers with uniform thickness down to the nanometer range are required. For such thicknesses, the growth mode, defining how the material is arranged on the surface during the growth, is of critical importance. In this work, the growth mode of the zirconium tetrachloride/water and the trimethyl aluminum/water ALD process on hydrogen-terminated silicon was investigated by combining information on the total amount of material deposited with information on the surface fraction of the material. The total amount of material deposited was measured by Rutherford backscattering, x-ray fluorescence, and inductively coupled plasma-optical emission spectroscopy, and the surface fractions by low-energy ion scattering. Growth mode modeling was made assuming two-dimensional growth or random deposition (RD), with a "shower model" of RD recently developed for ALD. Experimental surface fractions of the ALD-grown zirconium oxide and aluminum oxide films were lower than the surface fractions calculated assuming RD, suggesting the occurrence of island growth. Island growth was confirmed with transmission electron microscopy (TEM) measurements, from which the island size and number of islands per unit surface area could also be estimated. The conclusion of island growth for the aluminum oxide deposition on hydrogen-terminated silicon contradicts earlier observations. In this work, physical aluminum oxide islands were observed in TEM after 15 ALD reaction cycles. Earlier, thicker aluminum oxide layers have been analyzed, where islands have not been observed because they have already coalesced to form a continuous film. The unreactivity of hydrogen-terminated silicon surface towards the ALD reactants, except for reactive defect areas, is proposed as the origin of island growth. Consequently, island growth can be regarded as "undesired surface-selective ALD."

  20. Auger and X-ray PhotoelectronSpectroscopy Study of the Density ofOxygen States in Bismuth, Aluminum, Silicon, and Uranium Oxides

    SciTech Connect

    Teterin, Yu A.; Ivanov, K.E.; Teterin, A. Yu; Lebedev, A.M.; Utkin, I.O.; Vukchevich, L.

    1998-08-03

    The correlation of relative partial electron density at the oxygen ions with the intensity of Auger O KLL lines in Bi2O3, Al2O3, SiO2 and UO2 has been determined by Auger and X-ray photoelectron spectroscopic methods. The dependence of the relative intensities of Auger O KL2-3L2-3 and O KL1L2-3-lines was characterized from the binding energy of O 1s electrons. The electron density of the outer valence levels of oxygen increases as the relative intensities of Anger OKL2-3L2-3 and O KL1L2-3-lines increase. The fine structure observed in the O KL1L2-3 Auger and the O 2s XPS spectra has been explained by the formation of inner valence molecular orbitals (IVMO) from the interaction of electrons of the O 2s and filled metal ns shells.