Towards lightweight and flexible high performance nanocrystalline silicon solar cells through light trapping and transport layers

NASA Astrophysics Data System (ADS)

Gray, Zachary R.

This thesis investigates ways to enhance the efficiency of thin film solar cells through the application of both novel nano-element array light trapping architectures and nickel oxide hole transport/electron blocking layers. Experimental results independently demonstrate a 22% enhancement in short circuit current density (JSC) resulting from a nano-element array light trapping architecture and a ˜23% enhancement in fill factor (FF) and ˜16% enhancement in open circuit voltage (VOC) resulting from a nickel oxide transport layer. In each case, the overall efficiency of the device employing the light trapping or transport layer was superior to that of the corresponding control device. Since the efficiency of a solar cell scales with the product of JSC, FF, and VOC, it follows that the results of this thesis suggest high performance thin film solar cells can be realized in the event light trapping architectures and transport layers can be simultaneously optimized. The realizations of these performance enhancements stem from extensive process optimization for numerous light trapping and transport layer fabrication approaches. These approaches were guided by numerical modeling techniques which will also be discussed. Key developments in this thesis include (1) the fabrication of nano-element topographies conducive to light trapping using various fabrication approaches, (2) the deposition of defect free nc-Si:H onto structured topographies by switching from SiH4 to SiF 4 PECVD gas chemistry, and (3) the development of the atomic layer deposition (ALD) growth conditions for NiO. Keywords: light trapping, nano-element array, hole transport layer, electron blocking layer, nickel oxide, nanocrystalline silicon, aluminum doped zinc oxide, atomic layer deposition, plasma enhanced chemical vapor deposition, electron beam lithography, ANSYS HFSS.

X-ray absorption spectroscopy study of parent misfit-layered cobalt oxide [Sr₂O₂] q}CoO₂

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chou, Ta-Lei; Chan, Ting-Shan; Chen, Jin-Ming

Here we present a comprehensive X-ray absorption spectroscopy study carried out at Co-L₂,₃, Co-K, O-K and Sr-K edges for the parent misfit-layered cobalt oxide phase [Sr₂O₂]₀.₅₂CoO₂; comparison is made to another misfit-layered oxide [CoCa₂O₃]₀.₆₂CoO₂ and the perovskite oxide LaCoO₃. A high-quality sample of [Sr₂O₂]₀.₅₂CoO₂ was obtained through ultra-high-pressure synthesis using Sr₃Co₂O₆ and Sr(OH)₂∙8H₂O as starting materials. Different dosages of KClO₃ were mixed with the raw materials as an oxygen source and tested, but it was found that the window for the redox control of [Sr₂O₂]₀.₅₂CoO₂ is rather narrow. From Co-K and Co-L₂,₃ spectra a mixed III/IV valence state is revealedmore » for cobalt in [Sr₂O₂]₀.₅₂}CoO₂, but the average valence value is a little lower than in [CoCa₂O₃]₀.₆₂CoO₂. Then, Sr-K spectrum indicates that the [Sr₂O₂] double-layer block in [Sr₂O₂]₀.₅₂CoO₂ clearly deviates from the cubic SrO rock-salt structure, suggesting a more complicated coordination environment for strontium. This together with a somewhat low Co-valence value and the fact that the phase formation of [Sr₂O₂]₀.₅₂CoO₂ required the presence of Sr(OH)₂∙8H₂O in the high-pressure synthesis suggest that the [Sr₂O₂] block contains ---OH groups, i.e. [Sr₂(O,OH)₂]₀.₅₂CoO₂. - Graphical abstract: [Sr₂O₂]₀.₅₂CoO₂ obtained through high-pressure synthesis is a parent of misfit-layered cobalt oxides, such as [CoCa₂O₃]₀.₆₂CoO₂ or [M mA₂O 2+m] qCoO₂ in general. Our comprehensive X-ray absorption spectroscopy study shows that both [Sr₂O₂]₀.₅₂CoO₂ and [CoCa₂O₃]₀.₆₂CoO₂ possess mixed III/IV valence cobalt, but the average Co-valence is a little lower in the former. This is tentatively believed to be due to OH --- groups replacing part of O²⁻ ions in the [Sr₂O₂] layer block. Highlights: • [Sr₂O₂]₀.₅₂CoO₂ is a parent of misfit-layered cobalt oxides. • It is obtained by ultra-high-pressure synthesis from Sr₃Co₂O₆, Sr(OH)₂∙6H₂O and KClO₃. • Co-K and Co---L XANES spectra reveal lower than expected Co-valence value. • Sr-K XANES spectrum indicates that the [Sr₂O₂] block is not of simple rock-salt structure. • This block most probably contains ---OH --- groups, i.e. [Sr₂(O,OH)₂]₀.₅₂CoO₂.« less

Highly improved photo-induced bias stability of sandwiched triple layer structure in sol-gel processed fluorine-doped indium zinc oxide thin film transistor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kim, Dongha; Park, Hyungjin; Bae, Byeong-Soo, E-mail: bsbae@kaist.ac.kr

In order to improve the reliability of TFT, an Al{sub 2}O{sub 3} insulating layer is inserted between active fluorine doped indium zinc oxide (IZO:F) thin films to form a sandwiched triple layer. All the thin films were fabricated via low-cost sol-gel process. Due to its large energy bandgap and high bonding energy with oxygen atoms, the Al{sub 2}O{sub 3} layer acts as a photo-induced positive charge blocking layer that effectively blocks the migration of both holes and V {sub o}{sup 2+} toward the interface between the gate insulator and the semiconductor. The inserted Al{sub 2}O{sub 3} triple layer exhibits amore » noticeably low turn on voltage shift of −0.7 V under NBIS as well as the good TFT performance with a mobility of 10.9 cm{sup 2}/V ⋅ s. We anticipate that this approach can be used to solve the stability issues such as NBIS, which is caused by inescapable oxygen vacancies.« less

The fabrication of highly ordered block copolymer micellar arrays: control of the separation distances of silicon oxide dots

NASA Astrophysics Data System (ADS)

Yoo, Hana; Park, Soojin

2010-06-01

We demonstrate the fabrication of highly ordered silicon oxide dotted arrays prepared from polydimethylsiloxane (PDMS) filled nanoporous block copolymer (BCP) films and the preparation of nanoporous, flexible Teflon or polyimide films. Polystyrene-block-poly(2-vinylpyridine) (PS-b-P2VP) films were annealed in toluene vapor to enhance the lateral order of micellar arrays and were subsequently immersed in alcohol to produce nano-sized pores, which can be used as templates for filling a thin layer of PDMS. When a thin layer of PDMS was spin-coated onto nanoporous BCP films and thermally annealed at a certain temperature, the PDMS was drawn into the pores by capillary action. PDMS filled BCP templates were exposed to oxygen plasma environments in order to fabricate silicon oxide dotted arrays. By addition of PS homopolymer to PS-b-P2VP copolymer, the separation distances of micellar arrays were tuned. As-prepared silicon oxide dotted arrays were used as a hard master for fabricating nanoporous Teflon or polyimide films by spin-coating polymer precursor solutions onto silicon patterns and peeling off. This simple process enables us to fabricate highly ordered nanoporous BCP templates, silicon oxide dots, and flexible nanoporous polymer patterns with feature size of sub-20 nm over 5 cm × 5 cm.

The fabrication of highly ordered block copolymer micellar arrays: control of the separation distances of silicon oxide dots.

PubMed

Yoo, Hana; Park, Soojin

2010-06-18

We demonstrate the fabrication of highly ordered silicon oxide dotted arrays prepared from polydimethylsiloxane (PDMS) filled nanoporous block copolymer (BCP) films and the preparation of nanoporous, flexible Teflon or polyimide films. Polystyrene-block-poly(2-vinylpyridine) (PS-b-P2VP) films were annealed in toluene vapor to enhance the lateral order of micellar arrays and were subsequently immersed in alcohol to produce nano-sized pores, which can be used as templates for filling a thin layer of PDMS. When a thin layer of PDMS was spin-coated onto nanoporous BCP films and thermally annealed at a certain temperature, the PDMS was drawn into the pores by capillary action. PDMS filled BCP templates were exposed to oxygen plasma environments in order to fabricate silicon oxide dotted arrays. By addition of PS homopolymer to PS-b-P2VP copolymer, the separation distances of micellar arrays were tuned. As-prepared silicon oxide dotted arrays were used as a hard master for fabricating nanoporous Teflon or polyimide films by spin-coating polymer precursor solutions onto silicon patterns and peeling off. This simple process enables us to fabricate highly ordered nanoporous BCP templates, silicon oxide dots, and flexible nanoporous polymer patterns with feature size of sub-20 nm over 5 cm x 5 cm.

Polystyrene-block-Poly(ionic liquid) Copolymers as Work Function Modifiers in Inverted Organic Photovoltaic Cells.

PubMed

Park, Jong Baek; Isik, Mehmet; Park, Hea Jung; Jung, In Hwan; Mecerreyes, David; Hwang, Do-Hoon

2018-02-07

Interfacial layers play a critical role in building up the Ohmic contact between electrodes and functional layers in organic photovoltaic (OPV) solar cells. These layers are based on either inorganic oxides (ZnO and TiO 2 ) or water-soluble organic polymers such as poly[(9,9-dioctyl-2,7-fluorene)-alt-(9,9-bis(3'-(N,N-dimethylamino)propyl)-2,7-fluorene)] and polyethylenimine ethoxylated (PEIE). In this work, we have developed a series of novel poly(ionic liquid) nonconjugated block copolymers for improving the performance of inverted OPV cells by using them as work function modifiers of the indium tin oxide (ITO) cathode. Four nonconjugated polyelectrolytes (n-CPEs) based on polystyrene and imidazolium poly(ionic liquid) (PSImCl) were synthesized by reversible addition-fragmentation chain transfer polymerization. The ratio of hydrophobic/hydrophilic block copolymers was varied depending on the ratio of polystyrene to the PSImCl block. The ionic density, which controls the work function of the electrode by forming an interfacial dipole between the electrode and the block copolymers, was easily tuned by simply changing the PSImCl molar ratio. The inverted OPV device with the ITO/PS 29 -b-PSImCl 60 cathode achieved the best power conversion efficiency (PCE) of 7.55% among the synthesized block copolymers, exhibiting an even higher PCE than that of the reference OPV device with PEIE (7.30%). Furthermore, the surface properties of the block copolymers films were investigated by contact angle measurements to explore the influence of the controlled hydrophobic/hydrophilic characters on the device performances.

Bulk heterojunction perovskite solar cells based on room temperature deposited hole-blocking layer: Suppressed hysteresis and flexible photovoltaic application

NASA Astrophysics Data System (ADS)

Chen, Zhiliang; Yang, Guang; Zheng, Xiaolu; Lei, Hongwei; Chen, Cong; Ma, Junjie; Wang, Hao; Fang, Guojia

2017-05-01

Perovskite solar cells have developed rapidly in recent years as the third generation solar cells. In spite of the great improvement achieved, there still exist some issues such as undesired hysteresis and indispensable high temperature process. In this work, bulk heterojunction perovskite-phenyl-C61-butyric acid methyl ester solar cells have been prepared to diminish hysteresis using a facile two step spin-coating method. Furthermore, high quality tin oxide films are fabricated using pulse laser deposition technique at room temperature without any annealing procedure. The as fabricated tin oxide film is successfully applied in bulk heterojunction perovskite solar cells as a hole blocking layer. Bulk heterojunction devices based on room temperature tin oxide exhibit almost hysteresis-free characteristics with power conversion efficiency of 17.29% and 14.0% on rigid and flexible substrates, respectively.

Competing Structural Instabilities in the Ruddlesden–Popper Derivatives HRTiO 4 (R = Rare Earths): Oxygen Octahedral Rotations Inducing Noncentrosymmetricity and Layer Sliding Retaining Centrosymmetricity

DOE PAGES

Sen Gupta, Arnab; Akamatsu, Hirofumi; Brown, Forrest G.; ...

2016-12-06

We report the discovery of noncentrosymmetry in the family of HRTiO 4 (R = Eu, Gd, Dy) layered oxides possessing a Ruddlesden-Popper derivative structure, by second harmonic generation and synchrotron x-ray diffraction with the support of density functional theory calculations. These oxides were previously thought to possess inversion symmetry. Here, inversion symmetry is broken by oxygen octahedral rotations, a mechanism that is not active in simple perovskites. We discover a competition between oxygen octahedral rotations and sliding of the octahedral perovskite blocks at the OH layers. For the smaller rare earth ions, R = Eu, Gd, Dy, which favor themore » octahedral rotations, noncentrosymmetry is present but the sliding at the OH layer is absent. For the larger rare earth ions, R = Nd and Sm, the octahe-dral rotations are absent, but sliding of the octahedral blocks at the OH layer is present, likely to optimize the hydrogen bond length arising from the directional nature of these bonds in the crystal structure. The study reveals a new mechanism for inducing noncentrosymmetry in layered oxides, and chemical-structural effects related to rare earth ion size and hydrogen bonding that can turn this mechanism on and off. In conclusion, we construct a complete phase diagram of temperature versus rare earth ionic radius for the HRTiO 4 family.« less

Competing Structural Instabilities in the Ruddlesden–Popper Derivatives HRTiO 4 (R = Rare Earths): Oxygen Octahedral Rotations Inducing Noncentrosymmetricity and Layer Sliding Retaining Centrosymmetricity

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sen Gupta, Arnab; Akamatsu, Hirofumi; Brown, Forrest G.

We report the discovery of noncentrosymmetry in the family of HRTiO 4 (R = Eu, Gd, Dy) layered oxides possessing a Ruddlesden-Popper derivative structure, by second harmonic generation and synchrotron x-ray diffraction with the support of density functional theory calculations. These oxides were previously thought to possess inversion symmetry. Here, inversion symmetry is broken by oxygen octahedral rotations, a mechanism that is not active in simple perovskites. We discover a competition between oxygen octahedral rotations and sliding of the octahedral perovskite blocks at the OH layers. For the smaller rare earth ions, R = Eu, Gd, Dy, which favor themore » octahedral rotations, noncentrosymmetry is present but the sliding at the OH layer is absent. For the larger rare earth ions, R = Nd and Sm, the octahe-dral rotations are absent, but sliding of the octahedral blocks at the OH layer is present, likely to optimize the hydrogen bond length arising from the directional nature of these bonds in the crystal structure. The study reveals a new mechanism for inducing noncentrosymmetry in layered oxides, and chemical-structural effects related to rare earth ion size and hydrogen bonding that can turn this mechanism on and off. In conclusion, we construct a complete phase diagram of temperature versus rare earth ionic radius for the HRTiO 4 family.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang, Liang; Wang, C. Z.; Lin, Shiwei

Understanding of metal oxidation is very critical to corrosion control, catalysis synthesis, and advanced materials engineering. Metal oxidation is a very complex phenomenon, with many different processes which are coupled and involved from the onset of reaction. In this work, the initial stage of oxidation on titanium surface was investigated in atomic scale by molecular dynamics (MD) simulations using a reactive force field (ReaxFF). We show that oxygen transport is the dominant process during the initial oxidation. Our simulation also demonstrate that a compressive stress was generated in the oxide layer which blocked the oxygen transport perpendicular to the Titaniummore » (0001) surface and further prevented oxidation in the deeper layers. As a result, the mechanism of initial oxidation observed in this work can be also applicable to other self-limiting oxidation.« less

Enhancement of resistive switching properties in Al2O3 bilayer-based atomic switches: multilevel resistive switching

NASA Astrophysics Data System (ADS)

Vishwanath, Sujaya Kumar; Woo, Hyunsuk; Jeon, Sanghun

2018-06-01

Atomic switches are considered to be building blocks for future non-volatile data storage and internet of things. However, obtaining device structures capable of ultrahigh density data storage, high endurance, and long data retention, and more importantly, understanding the switching mechanisms are still a challenge for atomic switches. Here, we achieved improved resistive switching performance in a bilayer structure containing aluminum oxide, with an oxygen-deficient oxide as the top switching layer and stoichiometric oxide as the bottom switching layer, using atomic layer deposition. This bilayer device showed a high on/off ratio (105) with better endurance (∼2000 cycles) and longer data retention (104 s) than single-oxide layers. In addition, depending on the compliance current, the bilayer device could be operated in four different resistance states. Furthermore, the depth profiles of the hourglass-shaped conductive filament of the bilayer device was observed by conductive atomic force microscopy.

Ultrathin Lutetium Oxide Film as an Epitaxial Hole-Blocking Layer for Crystalline Bismuth Vanadate Water Splitting Photoanodes

DOE PAGES

Zhang, Wenrui; Yan, Danhua; Tong, Xiao; ...

2018-01-08

Here a novel ultrathin lutetium oxide (Lu 2O 3) interlayer is integrated with crystalline bismuth vanadate (BiVO4) thin film photoanodes to facilitate carrier transport through atomic-scale interface control. The epitaxial Lu 2O 32O 3

Effect of oxide insertion layer on resistance switching properties of copper phthalocyanine

NASA Astrophysics Data System (ADS)

Joshi, Nikhil G.; Pandya, Nirav C.; Joshi, U. S.

2013-02-01

Organic memory device showing resistance switching properties is a next-generation of the electrical memory unit. We have investigated the bistable resistance switching in current-voltage (I-V) characteristics of organic diode based on copper phthalocyanine (CuPc) film sandwiched between aluminum (Al) electrodes. Pronounced hysteresis in the I-V curves revealed a resistance switching with on-off ratio of the order of 85%. In order to control the charge injection in the CuPc, nanoscale indium oxide buffer layer was inserted to form Al/CuPc/In2O3/Al device. Analysis of I-V measurements revealed space charge limited switching conduction at the Al/CuPc interface. The traps in the organic layer and charge blocking by oxide insertion layer have been used to explain the absence of resistance switching in the oxide buffer layered memory device cell. Present study offer potential applications for CuPc organic semiconductor in low power non volatile resistive switching memory and logic circuits.

Oxidation of GaSb(100) and its control studied by scanning tunneling microscopy and spectroscopy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mäkelä, J., E-mail: jaakko.m.makela@utu.fi, E-mail: pekka.laukkanen@utu.fi, E-mail: rmwallace@utdallas.edu; Tuominen, M.; Yasir, M.

2015-08-10

Atomic-scale knowledge and control of oxidation of GaSb(100), which is a potential interface for energy-efficient transistors, are still incomplete, largely due to an amorphous structure of GaSb(100) oxides. We elucidate these issues with scanning-tunneling microscopy and spectroscopy. The unveiled oxidation-induced building blocks cause defect states above Fermi level around the conduction-band edge. By interconnecting the results to previous photoemission findings, we suggest that the oxidation starts with substituting second-layer Sb sites by oxygen. Adding small amount of indium on GaSb(100), resulting in a (4 × 2)-In reconstruction, before oxidation produces a previously unreported, crystalline oxidized layer of (1 × 3)-O free of gap states.

Early Stage of Oxidation on Titanium Surface by Reactive Molecular Dynamics Simulation

DOE PAGES

Yang, Liang; Wang, C. Z.; Lin, Shiwei; ...

2018-01-01

Understanding of metal oxidation is very critical to corrosion control, catalysis synthesis, and advanced materials engineering. Metal oxidation is a very complex phenomenon, with many different processes which are coupled and involved from the onset of reaction. In this work, the initial stage of oxidation on titanium surface was investigated in atomic scale by molecular dynamics (MD) simulations using a reactive force field (ReaxFF). We show that oxygen transport is the dominant process during the initial oxidation. Our simulation also demonstrate that a compressive stress was generated in the oxide layer which blocked the oxygen transport perpendicular to the Titaniummore » (0001) surface and further prevented oxidation in the deeper layers. As a result, the mechanism of initial oxidation observed in this work can be also applicable to other self-limiting oxidation.« less

p-Type semiconducting nickel oxide as an efficiency-enhancing anode interfacial layer in polymer bulk-heterojunction solar cells

PubMed Central

Irwin, Michael D.; Buchholz, D. Bruce; Hains, Alexander W.; Chang, Robert P. H.; Marks, Tobin J.

2008-01-01

To minimize interfacial power losses, thin (5–80 nm) layers of NiO, a p-type oxide semiconductor, are inserted between the active organic layer, poly(3-hexylthiophene) (P3HT) + [6,6]-phenyl-C61 butyric acid methyl ester (PCBM), and the ITO (tin-doped indium oxide) anode of bulk-heterojunction ITO/P3HT:PCBM/LiF/Al solar cells. The interfacial NiO layer is deposited by pulsed laser deposition directly onto cleaned ITO, and the active layer is subsequently deposited by spin-coating. Insertion of the NiO layer affords cell power conversion efficiencies as high as 5.2% and enhances the fill factor to 69% and the open-circuit voltage (Voc) to 638 mV versus an ITO/P3HT:PCBM/LiF/Al control device. The value of such hole-transporting/electron-blocking interfacial layers is clearly demonstrated and should be applicable to other organic photovoltaics.

Electrochromic window with high reflectivity modulation

DOEpatents

Goldner, Ronald B.; Gerouki, Alexandra; Liu, Te-Yang; Goldner, Mark A.; Haas, Terry E.

2000-01-01

A multi-layered, active, thin film, solid-state electrochromic device having a high reflectivity in the near infrared in a colored state, a high reflectivity and transmissivity modulation when switching between colored and bleached states, a low absorptivity in the near infrared, and fast switching times, and methods for its manufacture and switching are provided. In one embodiment, a multi-layered device comprising a first indium tin oxide transparent electronic conductor, a transparent ion blocking layer, a tungsten oxide electrochromic anode, a lithium ion conducting-electrically resistive electrolyte, a complimentary lithium mixed metal oxide electrochromic cathode, a transparent ohmic contact layer, a second indium oxide transparent electronic conductor, and a silicon nitride encapsulant is provided. Through elimination of optional intermediate layers, simplified device designs are provided as alternative embodiments. Typical colored-state reflectivity of the multi-layered device is greater than 50% in the near infrared, bleached-state reflectivity is less than 40% in the visible, bleached-state transmissivity is greater than 60% in the near infrared and greater than 40% in the visible, and spectral absorbance is less than 50% in the range from 0.65-2.5 .mu.m.

Nanosized amorphous calcium carbonate stabilized by poly(ethylene oxide)-b-poly(acrylic acid) block copolymers.

PubMed

Guillemet, Baptiste; Faatz, Michael; Gröhn, Franziska; Wegner, Gerhard; Gnanou, Yves

2006-02-14

Particles of amorphous calcium carbonate (ACC), formed in situ from calcium chloride by the slow release of carbon dioxide by alkaline hydrolysis of dimethyl carbonate in water, are stabilized against coalescence in the presence of very small amounts of double hydrophilic block copolymers (DHBCs) composed of poly(ethylene oxide) (PEO) and poly(acrylic acid) (PAA) blocks. Under optimized conditions, spherical particles of ACC with diameters less than 100 nm and narrow size distribution are obtained at a concentration of only 3 ppm of PEO-b-PAA as additive. Equivalent triblock or star DHBCs are compared to diblock copolymers. The results are interpreted assuming an interaction of the PAA blocks with the surface of the liquid droplets of the concentrated CaCO3 phase, formed by phase separation from the initially homogeneous reaction mixture. The adsorption layer of the block copolymer protects the liquid precursor of ACC from coalescence and/or coagulation.

Nanoconstricted structure for current-confined path in current-perpendicular-to-plane spin valves with high magnetoresistance

NASA Astrophysics Data System (ADS)

Fukuzawa, H.; Yuasa, H.; Koi, K.; Iwasaki, H.; Tanaka, Y.; Takahashi, Y. K.; Hono, K.

2005-05-01

We have successfully observed a nanoconstricted structure for current-confined-path (CCP) effect in current-perpendicular-to-plane-giant-magnetoresistance (CPP-GMR) spin valves. By inserting an AlCu nano-oxide layer (NOL) formed by ion-assisted oxidation (IAO) between a pinned layer and a free layer, the MR ratio was increased while maintaining a small area resistance product (RA). The cross-sectional high-resolution transmission electron microscopy image of the sample with RA =380mΩμm2, ΔRA =16mΩμm2, and MR ratio=4.3% showed that an amorphous oxide layer is a main part of the NOL that blocks the electron conduction perpendicular to plane. Some parts of the NOL are punched through crystalline, metallic channels having a diameter of a few nanometers, which are thought to work as nanoconstricted electron conduction paths between the pinned layer and the free layer. Nano-energy-dispersive-x-ray-spectrum analysis also showed that Cu is enriched in the metallic channels, whereas Al is enriched in the amorphous oxide region, indicating that the metallic channel is made of Cu and the oxide is made of Al2O3. The nanoconstricted structure with good segregation between the metallic channel and the oxide layer enables us to realize a large MR ratio in CCP-CPP spin valves.

Bio-mimicked atomic-layer-deposited iron oxide-based memristor with synaptic potentiation and depression functions

NASA Astrophysics Data System (ADS)

Wan, Xiang; Gao, Fei; Lian, Xiaojuan; Ji, Xincun; Hu, Ertao; He, Lin; Tong, Yi; Guo, Yufeng

2018-06-01

In this study, an iron oxide (FeO x )-based memristor was investigated for the realization of artificial synapses. An FeO x resistive switching layer was prepared by self-limiting atomic layer deposition (ALD). The movement of oxygen vacancies enabled the device to have history-dependent synaptic functions, which was further demonstrated by device modeling and simulation. Analog synaptic potentiation/depression in conductance was emulated by applying consecutive voltage pulses in the simulation. Our results suggest that the ALD FeO x -based memristor can be used as the basic building block for neural networks, neuromorphic systems, and brain-inspired computers.

The potential of cashew gum functionalization as building blocks for layer-by-layer films.

PubMed

Leite, Álvaro J; Costa, Rui R; Costa, Ana M S; Maciel, Jeanny S; Costa, José F G; de Paula, Regina C M; Mano, João F

2017-10-15

Cashew gum (CG), an exudate polysaccharide from Anacardium occidentale trees, was carboxymethylated (CGCm) and oxidized (CGO). These derivatives were characterized by FTIR and zeta potential measurements confirming the success of carboxymethylation and oxidation reactions. Nanostructured multilayered films were then produced through layer-by-layer (LbL) assembly in conjugation with chitosan via electrostatic interactions or Schiff bases covalent bonds. The films were analyzed by QCM-D and AFM. CG functionalization increased the film thickness, with the highest thickness being achieved for the lowest oxidation degree. The roughest surface was obtained for the CGO with the highest oxidation degree due to the predominance of covalent Schiff bases. This work shows that nanostructured films can be assembled and stabilized by covalent bonds in alternative to the conventional electrostatic ones. Moreover, the functionalization of CG can increase its feasibility in multilayers films, widening its potential in biomedical, food industry, or environmental applications. Copyright © 2017 Elsevier Ltd. All rights reserved.

Enhancement of resistive switching properties in Al2O3 bilayer-based atomic switches: multilevel resistive switching.

PubMed

Vishwanath, Sujaya Kumar; Woo, Hyunsuk; Jeon, Sanghun

2018-06-08

Atomic switches are considered to be building blocks for future non-volatile data storage and internet of things. However, obtaining device structures capable of ultrahigh density data storage, high endurance, and long data retention, and more importantly, understanding the switching mechanisms are still a challenge for atomic switches. Here, we achieved improved resistive switching performance in a bilayer structure containing aluminum oxide, with an oxygen-deficient oxide as the top switching layer and stoichiometric oxide as the bottom switching layer, using atomic layer deposition. This bilayer device showed a high on/off ratio (10 5 ) with better endurance (∼2000 cycles) and longer data retention (10 4 s) than single-oxide layers. In addition, depending on the compliance current, the bilayer device could be operated in four different resistance states. Furthermore, the depth profiles of the hourglass-shaped conductive filament of the bilayer device was observed by conductive atomic force microscopy.

Compact 2D OPC modeling of a metal oxide EUV resist for a 7nm node BEOL layer

NASA Astrophysics Data System (ADS)

Lyons, Adam; Rio, David; Lee, Sook; Wallow, Thomas; Delorme, Maxence; Fumar-Pici, Anita; Kocsis, Michael; de Schepper, Peter; Greer, Michael; Stowers, Jason K.; Gillijns, Werner; De Simone, Danilo; Bekaert, Joost

2017-03-01

Inpria has developed a directly patternable metal oxide hard-mask as a high-resolution photoresist for EUV lithography1. In this contribution, we describe a Tachyon 2D OPC full-chip model for an Inpria resist as applied to an N7 BEOL block mask application.

Nanoscale Multigate TiN Metal Nanocrystal Memory Using High-k Blocking Dielectric and High-Work-Function Gate Electrode Integrated on Silcon-on-Insulator Substrate

NASA Astrophysics Data System (ADS)

Lu, Chi-Pei; Luo, Cheng-Kei; Tsui, Bing-Yue; Lin, Cha-Hsin; Tzeng, Pei-Jer; Wang, Ching-Chiun; Tsai, Ming-Jinn

2009-04-01

In this study, a charge-trapping-layer-engineered nanoscale n-channel trigate TiN nanocrystal nonvolatile memory was successfully fabricated on silicon-on-insulator (SOI) wafer. An Al2O3 high-k blocking dielectric layer and a P+ polycrystalline silicon gate electrode were used to obtain low operation voltage and suppress the back-side injection effect, respectively. TiN nanocrystals were formed by annealing TiN/Al2O3 nanolaminates deposited by an atomic layer deposition system. The memory characteristics of various samples with different TiN wetting layer thicknesses, post-deposition annealing times, and blocking oxide thicknesses were also investigated. The sample with a thicker wetting layer exhibited a much larger memory window than other samples owing to its larger nanocrystal size. Good retention with a mere 12% charge loss for up to 10 years and high endurance were also obtained. Furthermore, gate disturbance and read disturbance were measured with very small charge migrations after a 103 s stressing bias.

Thulium-170 heat source

DOEpatents

Walter, Carl E.; Van Konynenburg, Richard; VanSant, James H.

1992-01-01

An isotopic heat source is formed using stacks of thin individual layers of a refractory isotopic fuel, preferably thulium oxide, alternating with layers of a low atomic weight diluent, preferably graphite. The graphite serves several functions: to act as a moderator during neutron irradiation, to minimize bremsstrahlung radiation, and to facilitate heat transfer. The fuel stacks are inserted into a heat block, which is encased in a sealed, insulated and shielded structural container. Heat pipes are inserted in the heat block and contain a working fluid. The heat pipe working fluid transfers heat from the heat block to a heat exchanger for power conversion. Single phase gas pressure controls the flow of the working fluid for maximum heat exchange and to provide passive cooling.

Fabrication of disposable topographic silicon oxide from sawtoothed patterns: control of arrays of gold nanoparticles.

PubMed

Cho, Heesook; Yoo, Hana; Park, Soojin

2010-05-18

Disposable topographic silicon oxide patterns were fabricated from polymeric replicas of sawtoothed glass surfaces, spin-coating of poly(dimethylsiloxane) (PDMS) thin films, and thermal annealing at certain temperature and followed by oxygen plasma treatment of the thin PDMS layer. A simple imprinting process was used to fabricate the replicated PDMS and PS patterns from sawtoothed glass surfaces. Next, thin layers of PDMS films having different thicknesses were spin-coated onto the sawtoothed PS surfaces and annealed at 60 degrees C to be drawn the PDMS into the valley of the sawtoothed PS surfaces, followed by oxygen plasma treatment to fabricate topographic silicon oxide patterns. By control of the thickness of PDMS layers, silicon oxide patterns having various line widths were fabricated. The silicon oxide topographic patterns were used to direct the self-assembly of polystyrene-block-poly(2-vinylpyridine) (PS-b-P2VP) block copolymer thin films via solvent annealing process. A highly ordered PS-b-P2VP micellar structure was used to let gold precursor complex with P2VP chains, and followed by oxygen plasma treatment. When the PS-b-P2VP thin films containing gold salts were exposed to oxygen plasma environments, gold salts were reduced to pure gold nanoparticles without changing high degree of lateral order, while polymers were completely degraded. As the width of trough and crest in topographic patterns increases, the number of gold arrays and size of gold nanoparticles are tuned. In the final step, the silicon oxide topographic patterns were selectively removed by wet etching process without changing the arrays of gold nanoparticles.

Design, fabrication and characterization of a double layer solid oxide fuel cell (DLFC)

NASA Astrophysics Data System (ADS)

Wang, Guangjun; Wu, Xiangying; Cai, Yixiao; Ji, Yuan; Yaqub, Azra; Zhu, Bin

2016-11-01

A double layer solid oxide fuel cell (DLSOFC) without using the electrolyte (layer) has been designed by integrating advantages of positive electrode material of lithium ion battery(LiNi0.8Co0.15Al0.05O2) and oxygen-permeable membranes material (trace amount cobalt incorporated terbium doped ceria, TDC + Co) based on the semiconductor physics principle. Instead of using an electrolyte layer, the depletion layer between the anode and cathode served as an electronic insulator to block the electrons but to maintain the electrolyte function for ionic transport. Thus the device with two layers can realize the function of SOFC and at the same time avoids the electronic short circuiting problem. Such novel DLFC showed good performance at low temperatures, for instance, a maximum power density of 230 mWcm-2 was achieved at 500 °C. The working principle of the new device is presented.

Solid oxide fuel cell matrix and modules

DOEpatents

Riley, B.

1988-04-22

Porous refractory ceramic blocks arranged in an abutting, stacked configuration and forming a three dimensional array provide a support structure and coupling means for a plurality of solid oxide fuel cells (SOFCs). The stack of ceramic blocks is self-supporting, with a plurality of such stacked arrays forming a matrix enclosed in an insulating refractory brick structure having an outer steel layer. The necessary connections for air, fuel, burnt gas, and anode and cathode connections are provided through the brick and steel outer shell. The ceramic blocks are so designed with respect to the strings of modules that by simple and logical design the strings could be replaced by hot reloading if one should fail. The hot reloading concept has not been included in any previous designs. 11 figs.

Observation of nanometer-sized electro-active defects in insulating layers by fluorescence microscopy and electrochemistry.

PubMed

Renault, Christophe; Marchuk, Kyle; Ahn, Hyun S; Titus, Eric J; Kim, Jiyeon; Willets, Katherine A; Bard, Allen J

2015-06-02

We report a method to study electro-active defects in passivated electrodes. This method couples fluorescence microscopy and electrochemistry to localize and size electro-active defects. The method was validated by comparison with a scanning probe technique, scanning electrochemical microscopy. We used our method for studying electro-active defects in thin TiO2 layers electrodeposited on 25 μm diameter Pt ultramicroelectrodes (UMEs). The permeability of the TiO2 layer was estimated by measuring the oxidation of ferrocenemethanol at the UME. Blocking of current ranging from 91.4 to 99.8% was achieved. Electro-active defects with an average radius ranging between 9 and 90 nm were observed in these TiO2 blocking layers. The distribution of electro-active defects over the TiO2 layer is highly inhomogeneous and the number of electro-active defect increases for lower degree of current blocking. The interest of the proposed technique is the possibility to quickly (less than 15 min) image samples as large as several hundreds of μm(2) while being able to detect electro-active defects of only a few tens of nm in radius.

Topographic, optical and chemical properties of zinc particle coatings deposited by means of atmospheric pressure plasma

NASA Astrophysics Data System (ADS)

Wallenhorst, L. M.; Loewenthal, L.; Avramidis, G.; Gerhard, C.; Militz, H.; Ohms, G.; Viöl, W.

2017-07-01

In this research, topographic, optical and chemical properties of zinc oxide layers deposited by a cold plasma-spray process were measured. Here, zinc micro particles were fed to the afterglow of a plasma spark discharge whereas the substrates were placed in a quite cold zone of the effluent plasma jet. In this vein, almost closed layers were realised on different samples. As ascertained by laser scanning and atomic force microscopic measurements the particle size of the basic layer is in the nanometre scale. Additionally, larger particles and agglomerates were found on its top. The results indicate a partial plasma-induced diminishment of the initial particles, most probably due to melting or vaporisation. It is further shown that the plasma gives rise to an increased oxidation of such particles as confirmed by X-ray photoelectron spectroscopy. Quantitative analysis of the resulting mixed layer was performed. It is shown that the deposited layers consist of zinc oxide and elemental zinc in approximately equal shares. In addition, the layer's band gap energy was determined by spectroscopic analysis. Here, considerable UV blocking properties of the deposited layers were observed. Possible underlying effects as well as potential applications are presented.

Nanosheets of oxides and hydroxides: Ultimate 2D charge-bearing functional crystallites.

PubMed

Ma, Renzhi; Sasaki, Takayoshi

2010-12-01

A wide variety of cation-exchangeable layered transition metal oxides and their relatively rare counterparts, anion-exchangeable layered hydroxides, have been exfoliated into individual host layers, i.e., nanosheets. Exfoliation is generally achieved via a high degree of swelling, typically driven either by intercalation of bulky organic ions (quaternary ammonium cations, propylammonium cations, etc.) for the layered oxides or by solvation with organic solvents (formamide, butanol, etc.) for the hydroxides. Ultimate two-dimensional (2D) anisotropy for the nanosheets, with thickness of around one nanometer versus lateral size ranging from submicrometer to several tens of micrometers, allows them to serve either as an ideal quantum system for fundamental study or as a basic building block for functional assembly. The charge-bearing inorganic macromolecule-like nanosheets can be assembled or organized through various solution-based processing techniques (e.g., flocculation, electrostatic sequential deposition, or the Langmuir-Blodgett method) to produce a range of nanocomposites, multilayer nanofilms, and core-shell nanoarchitectures, which have great potential for electronic, magnetic, optical, photochemical, and catalytic applications.

Optimized plasma etch window of block copolymers and neutral brush layers for enhanced direct self-assembly pattern transfer into a hardmask layer

NASA Astrophysics Data System (ADS)

Brakensiek, Nickolas; Xu, Kui; Sweat, Daniel; Hockey, Mary Ann

2018-03-01

Directed self-assembly (DSA) of block copolymers (BCPs) is one of the most promising patterning technologies for future lithography nodes. However, one of the biggest challenges to DSA is the pattern transfer by plasma etching from BCP to hardmask (HM) because the etch selectivity between BCP and neutral brush layer underneath is usually not high enough to enable robust pattern transfer. This paper will explore the plasma etch conditions of both BCPs and neutral brush layers that may improve selectivity and allow a more robust pattern transfer of DSA patterns into the hardmask layer. The plasma etching parameters that are under investigation include the selection of oxidative or reductive etch chemistries, as well as plasma gas pressure, power, and gas mixture fractions. Investigation into the relationship between BCP/neutral brush layer materials with varying chemical compositions and the plasma etching conditions will be highlighted. The culmination of this work will demonstrate important etch parameters that allow BCPs and neutral brush layers to be etched into the underlying hardmask layer with a large process window.

Synthesis and optoelectronic properties of nanocomposites comprising of poly(9,9-dioctylfluorene)-block-poly(3-hexylthiophene) block copolymer and graphene nanosheets.

PubMed

Chiu, Po-Chun; Su, Reagen Ying-Tai; Yeh, Je-Yuan; Yeh, Cheng-Yang; Tsiang, Raymond Chien-Chao

2013-06-01

A novel conjugated block copolymer, poly(9,9-dioctylfluorene)-block-poly(3-hexylthiophene) (PFBPT) and its nanocomposite containing graphene sheets were synthesized for enhancing optoelectronic performance. Graphene sheets were in-situ formed in the polymer matrix via a reduction of octadecylamine-functionalized graphite oxide, where the graphite oxide came from acidification and exfoliation of graphite. The blue-green light-emitting poly(9,9-dioctylfluorene) block and red-orange light-emitting poly(3-hexylthiophene) block exhibit a combined white electroluminescence when the composite materials were fabricated as the emitting layer of a polymeric light-emitting diode (PLED). Graphene does not alter the optical characteristics wavelength of PFBPT but electric conductivity increases with the amount of graphene. The HOMO and LUMO were measured and the band gap is smaller with existence of graphene. The threshold voltage decreases with an increase in the graphene content. The device fabricated with PFBPT/graphene nanocomposite containing 1% graphene has a maximum white-light luminescence at a voltage of 9.0 V.

Plasmonically sensitized metal-oxide electron extraction layers for organic solar cells.

PubMed

Trost, S; Becker, T; Zilberberg, K; Behrendt, A; Polywka, A; Heiderhoff, R; Görrn, P; Riedl, T

2015-01-16

ZnO and TiOx are commonly used as electron extraction layers (EELs) in organic solar cells (OSCs). A general phenomenon of OSCs incorporating these metal-oxides is the requirement to illuminate the devices with UV light in order to improve device characteristics. This may cause severe problems if UV to VIS down-conversion is applied or if the UV spectral range (λ < 400 nm) is blocked to achieve an improved device lifetime. In this work, silver nanoparticles (AgNP) are used to plasmonically sensitize metal-oxide based EELs in the vicinity (1-20 nm) of the metal-oxide/organic interface. We evidence that plasmonically sensitized metal-oxide layers facilitate electron extraction and afford well-behaved highly efficient OSCs, even without the typical requirement of UV exposure. It is shown that in the plasmonically sensitized metal-oxides the illumination with visible light lowers the WF due to desorption of previously ionosorbed oxygen, in analogy to the process found in neat metal oxides upon UV exposure, only. As underlying mechanism the transfer of hot holes from the metal to the oxide upon illumination with hν < Eg is verified. The general applicability of this concept to most common metal-oxides (e.g. TiOx and ZnO) in combination with different photoactive organic materials is demonstrated.

Plasmonically sensitized metal-oxide electron extraction layers for organic solar cells

PubMed Central

Trost, S.; Becker, T.; Zilberberg, K.; Behrendt, A.; Polywka, A.; Heiderhoff, R.; Görrn, P.; Riedl, T.

2015-01-01

ZnO and TiOx are commonly used as electron extraction layers (EELs) in organic solar cells (OSCs). A general phenomenon of OSCs incorporating these metal-oxides is the requirement to illuminate the devices with UV light in order to improve device characteristics. This may cause severe problems if UV to VIS down-conversion is applied or if the UV spectral range (λ < 400 nm) is blocked to achieve an improved device lifetime. In this work, silver nanoparticles (AgNP) are used to plasmonically sensitize metal-oxide based EELs in the vicinity (1–20 nm) of the metal-oxide/organic interface. We evidence that plasmonically sensitized metal-oxide layers facilitate electron extraction and afford well-behaved highly efficient OSCs, even without the typical requirement of UV exposure. It is shown that in the plasmonically sensitized metal-oxides the illumination with visible light lowers the WF due to desorption of previously ionosorbed oxygen, in analogy to the process found in neat metal oxides upon UV exposure, only. As underlying mechanism the transfer of hot holes from the metal to the oxide upon illumination with hν < Eg is verified. The general applicability of this concept to most common metal-oxides (e.g. TiOx and ZnO) in combination with different photoactive organic materials is demonstrated. PMID:25592174

Effect of pH on the structure and drug release profiles of layer-by-layer assembled films containing polyelectrolyte, micelles, and graphene oxide.

PubMed

Han, Uiyoung; Seo, Younghye; Hong, Jinkee

2016-04-07

Layer by layer (lbl) assembled multilayer thin films are used in drug delivery systems with attractive advantages such as unlimited selection of building blocks and free modification of the film structure. In this paper, we report the fundamental properties of lbl films constructed from different substances such as PS-b-PAA amphiphilic block copolymer micelles (BCM) as nano-sized drug vehicles, 2D-shaped graphene oxide (GO), and branched polyethylenimine (bPEI). These films were fabricated by successive lbl assembly as a result of electrostatic interactions between the carboxyl group of BCM and amine group of functionalized GO or bPEI under various pH conditions. We also compared the thickness, roughness, morphology and degree of adsorption of the (bPEI/BCM) films to those in the (GO/BCM) films. The results showed significant difference because of the distinct pH dependence of each material. In addition, drug release rates of the GO/BCM film were more rapid those of the (bPEI/BCM) film in pH 7.4 and pH 2 PBS buffer solutions. In (bPEI/BCM/GO/BCM) film, the inserted GO layers into bPEI/BCM multilayer induced rapid drug release. We believe that these materials &pH dependent film properties allow developments in the control of coating techniques for biological and biomedical applications.

Thin film electronic devices with conductive and transparent gas and moisture permeation barriers

DOEpatents

Simpson, Lin Jay

2013-12-17

A thin film stack (100, 200) is provided for use in electronic devices such as photovoltaic devices. The stack (100, 200) may be integrated with a substrate (110) such as a light transmitting/transmissive layer. A electrical conductor layer (120, 220) is formed on a surface of the substrate (110) or device layer such as a transparent conducting (TC) material layer (120,220) with pin holes or defects (224) caused by manufacturing. The stack (100) includes a thin film (130, 230) of metal that acts as a barrier for environmental contaminants (226, 228). The metal thin film (130,230) is deposited on the conductor layer (120, 220) and formed from a self-healing metal such as a metal that forms self-terminating oxides. A permeation plug or block (236) is formed in or adjacent to the thin film (130, 230) of metal at or proximate to the pin holes (224) to block further permeation of contaminants through the pin holes (224).

Digital modulation of the nickel valence state in a cuprate-nickelate heterostructure

NASA Astrophysics Data System (ADS)

Wrobel, F.; Geisler, B.; Wang, Y.; Christiani, G.; Logvenov, G.; Bluschke, M.; Schierle, E.; van Aken, P. A.; Keimer, B.; Pentcheva, R.; Benckiser, E.

2018-03-01

Layer-by-layer oxide molecular-beam epitaxy has been used to synthesize cuprate-nickelate multilayer structures of composition (La2CuO4)m/LaO /(LaNiO3)n . In a combined experimental and theoretical study, we show that these structures allow a clean separation of dopant and doped layers. Specifically, the LaO layer separating cuprate and nickelate blocks provides an additional charge that, according to density-functional theory calculations, is predominantly accommodated in the interfacial nickelate layers. This is reflected in an elongation of bond distances and changes in valence state, as observed by scanning transmission electron microscopy and x-ray absorption spectroscopy. Moreover, the predicted charge disproportionation in the nickelate interface layers leads to a metal-to-insulator transition when the thickness is reduced to n =2 , as observed in electrical transport measurements. The results exemplify the perspectives of charge transfer in metal-oxide multilayers to induce doping without introducing chemical and structural disorder.

Performance enhancement of perovskite solar cells with Mg-doped TiO{sub 2} compact film as the hole-blocking layer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Jing; Qin, Minchao; Tao, Hong

2015-03-23

In this letter, we report perovskite solar cells with thin dense Mg-doped TiO{sub 2} as hole-blocking layers (HBLs), which outperform cells using TiO{sub 2} HBLs in several ways: higher open-circuit voltage (V{sub oc}) (1.08 V), power conversion efficiency (12.28%), short-circuit current, and fill factor. These properties improvements are attributed to the better properties of Mg-modulated TiO{sub 2} as compared to TiO{sub 2} such as better optical transmission properties, upshifted conduction band minimum (CBM) and downshifted valence band maximum (VBM), better hole-blocking effect, and higher electron life time. The higher-lying CBM due to the modulation with wider band gap MgO and themore » formation of magnesium oxide and magnesium hydroxides together resulted in an increment of V{sub oc}. In addition, the Mg-modulated TiO{sub 2} with lower VBM played a better role in the hole-blocking. The HBL with modulated band position provided better electron transport and hole blocking effects within the device.« less

Anomalous Diffusion of Water in Lamellar Membranes Formed by Pluronic Polymers

NASA Astrophysics Data System (ADS)

Zhang, Zhe; Ohl, Michael; Han, Youngkyu; Smith, Gregory; Do, Changwoo; Biology; Soft-Matter Division, Oak Ridge National Laboratory Team; Julich CenterNeutron Science Team

Water diffusion is playing an important role in polymer systems. We calculated the water diffusion coefficient at different layers along z-direction which is perpendicular to the lamellar membrane formed by Pluronic block copolymers (L62: (EO6-PO34-EO6)) with the molecular dynamics simulation trajectories. Water molecules at bulk layers are following the normal diffusion, while that at hydration layers formed by polyethylene oxide (PEO) and hydrophobic layers formed by polypropylene oxide (PPO) are following anomalous diffusion. We find that although the subdiffusive regimes at PEO layers and PPO layers are the same, which is the fractional Brownian motion, however, the dynamics are different, i.e. diffusion at the PEO layers is much faster than that at the PPO layers, and meanwhile it exhibits a normal diffusive approximation within a short time period which is governed by the localized free self-diffusion, but becomes subdiffusive after t >8 ps, which is governed by the viscoelastic medium. The Scientific User Facilities Division, Office of Basic Energy Sciences, U.S. Department of Energy; and Zhe Zhang gratefully acknowledges financial support from Julich Center for Neutron Science.

Selectivity Enhancement by Using Double-Layer MOX-Based Gas Sensors Prepared by Flame Spray Pyrolysis (FSP).

PubMed

Rebholz, Julia; Grossmann, Katharina; Pham, David; Pokhrel, Suman; Mädler, Lutz; Weimar, Udo; Barsan, Nicolae

2016-09-06

Here we present a novel concept for the selective recognition of different target gases with a multilayer semiconducting metal oxide (SMOX)-based sensor device. Direct current (DC) electrical resistance measurements were performed during exposure to CO and ethanol as single gases and mixtures of highly porous metal oxide double- and single-layer sensors obtained by flame spray pyrolysis. The results show that the calculated resistance ratios of the single- and double-layer sensors are a good indicator for the presence of specific gases in the atmosphere, and can constitute some building blocks for the development of chemical logic devices. Due to the inherent lack of selectivity of SMOX-based gas sensors, such devices could be especially relevant for domestic applications.

Selectivity Enhancement by Using Double-Layer MOX-Based Gas Sensors Prepared by Flame Spray Pyrolysis (FSP)

PubMed Central

Rebholz, Julia; Grossmann, Katharina; Pham, David; Pokhrel, Suman; Mädler, Lutz; Weimar, Udo; Barsan, Nicolae

2016-01-01

Here we present a novel concept for the selective recognition of different target gases with a multilayer semiconducting metal oxide (SMOX)-based sensor device. Direct current (DC) electrical resistance measurements were performed during exposure to CO and ethanol as single gases and mixtures of highly porous metal oxide double- and single-layer sensors obtained by flame spray pyrolysis. The results show that the calculated resistance ratios of the single- and double-layer sensors are a good indicator for the presence of specific gases in the atmosphere, and can constitute some building blocks for the development of chemical logic devices. Due to the inherent lack of selectivity of SMOX-based gas sensors, such devices could be especially relevant for domestic applications. PMID:27608028

Oxygen-ion-migration-modulated bipolar resistive switching and complementary resistive switching in tungsten/indium tin oxide/gold memory device

NASA Astrophysics Data System (ADS)

Wu, Xinghui; Zhang, Qiuhui; Cui, Nana; Xu, Weiwei; Wang, Kefu; Jiang, Wei; Xu, Qixing

2018-06-01

In this paper, we report our investigation of room-temperature-fabricated tungsten/indium tin oxide/gold (W/ITO/Au) resistive random access memory (RRAM), which exhibits asymmetric bipolar resistive switching (BRS) behavior. The device displays good write/erase endurance and data retention properties. The device shows complementary resistive switching (CRS) characteristics after controlling the compliance current. A WO x layer electrically formed at the W/ITO in the forming process. Mobile oxygen ions within ITO migrate toward the electrode/ITO interface and produce a semiconductor-like layer that acts as a free-carrier barrier. The CRS characteristic here can be elucidated in light of the evolution of an asymmetric free-carrier blocking layer at the electrode/ITO interface.

Coaxial metal-oxide-semiconductor (MOS) Au/Ga2O3/GaN nanowires.

PubMed

Hsieh, Chin-Hua; Chang, Mu-Tung; Chien, Yu-Jen; Chou, Li-Jen; Chen, Lih-Juann; Chen, Chii-Dong

2008-10-01

Coaxial metal-oxide-semiconductor (MOS) Au-Ga2O3-GaN heterostructure nanowires were successfully fabricated by an in situ two-step process. The Au-Ga2O3 core-shell nanowires were first synthesized by the reaction of Ga powder, a mediated Au thin layer, and a SiO2 substrate at 800 degrees C. Subsequently, these core-shell nanowires were nitridized in ambient ammonia to form a GaN coating layer at 600 degrees C. The GaN shell is a single crystal, an atomic flat interface between the oxide and semiconductor that ensures that the high quality of the MOS device is achieved. These novel 1D nitride-based MOS nanowires may have promise as building blocks to the future nitride-based vertical nanodevices.

Multifunctional Organic-Semiconductor Interfacial Layers for Solution-Processed Oxide-Semiconductor Thin-Film Transistor.

PubMed

Kwon, Guhyun; Kim, Keetae; Choi, Byung Doo; Roh, Jeongkyun; Lee, Changhee; Noh, Yong-Young; Seo, SungYong; Kim, Myung-Gil; Kim, Choongik

2017-06-01

The stabilization and control of the electrical properties in solution-processed amorphous-oxide semiconductors (AOSs) is crucial for the realization of cost-effective, high-performance, large-area electronics. In particular, impurity diffusion, electrical instability, and the lack of a general substitutional doping strategy for the active layer hinder the industrial implementation of copper electrodes and the fine tuning of the electrical parameters of AOS-based thin-film transistors (TFTs). In this study, the authors employ a multifunctional organic-semiconductor (OSC) interlayer as a solution-processed thin-film passivation layer and a charge-transfer dopant. As an electrically active impurity blocking layer, the OSC interlayer enhances the electrical stability of AOS TFTs by suppressing the adsorption of environmental gas species and copper-ion diffusion. Moreover, charge transfer between the organic interlayer and the AOS allows the fine tuning of the electrical properties and the passivation of the electrical defects in the AOS TFTs. The development of a multifunctional solution-processed organic interlayer enables the production of low-cost, high-performance oxide semiconductor-based circuits. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Solid oxide fuel cells with bi-layered electrolyte structure

NASA Astrophysics Data System (ADS)

Zhang, Xinge; Robertson, Mark; Decès-Petit, Cyrille; Xie, Yongsong; Hui, Rob; Qu, Wei; Kesler, Olivera; Maric, Radenka; Ghosh, Dave

In this work, we have developed solid oxide fuel cells with a bi-layered electrolyte of 2 μm SSZ and 4 μm SDC using tape casting, screen printing, and co-firing processes. The cell reached power densities of 0.54 W cm -2 at 650 °C and 0.85 W cm -2 at 700 °C, with open circuit voltage (OCV) values larger than 1.02 V. The electrical leaking between anode and cathode through an SDC electrolyte has been blocked in the bi-layered electrolyte structure. However, both the electrolyte resistance (R el) and electrode polarization resistance (R p,a+c) increased in comparison to cells with single-layered SDC electrolytes. The formation of a solid solution of (Ce, Zr)O 2- x during sintering process and the flaws in the bi-layered electrolyte structure seem to be the main causes for the increase in the R el value (0.32 Ω cm 2) at 650 °C, which is almost one order of magnitude higher than the calculated value.

Role of Y in the oxidation resistance of CrAlYN coatings

NASA Astrophysics Data System (ADS)

Domínguez-Meister, S.; El Mrabet, S.; Escobar-Galindo, R.; Mariscal, A.; Jiménez de Haro, M. C.; Justo, A.; Brizuela, M.; Rojas, T. C.; Sánchez-López, J. C.

2015-10-01

CrAlYN coatings with different aluminum (4-12 at.%) and yttrium (2-5 at.%) contents are deposited by d.c. reactive magnetron sputtering on silicon and M2 steel substrates using metallic targets and Ar/N2 mixtures. The influence of the nanostructure and chemical elemental distribution on the oxidation resistance after heating in air at 1000 °C is studied by means of cross-sectional scanning electron microscopy (X-SEM), energy dispersive X-ray analysis (EDX), X-ray diffraction (XRD) and glow discharge optical emission spectroscopy (GD-OES). The sequential exposure to the metallic targets during the synthesis leads to a multilayer structure where concentration of metallic elements (Cr, Al and Y) is changing periodically. A good oxidation resistance is observed when Al- and Y-rich regions are separated by well-defined CrN layers, maintaining crystalline coherence along the columnar structure. This protective behavior is independent of the type of substrate and corresponds to the formation of a thin mixed (Al, Cr)-oxide scale that protects the film underneath. The GD-OES and XRD analysis have demonstrated that Y acts as a reactive element, blocking the Fe and C atoms diffusion from the steel and favoring higher Al/Cr ratio in the passivation layer after heating. The coating with Y content around 4 at.% exhibited the best performance with a thinner oxide scale, a delay in the CrN decomposition and transformation to Cr2N, and a more effective Fe and C blocking.

Large enhancement of Blocking temperature by control of interfacial structures in Pt/NiFe/IrMn/MgO/Pt multilayers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen, Xi; Wang, Shouguo, E-mail: sgwang@ustb.edu.cn; Han, Gang

2015-09-15

The Blocking temperature (T{sub B}) of Pt/NiFe/IrMn/MgO/Pt multilayers was greatly enhanced from far below room temperature (RT) to above RT by inserting 1 nm thick Mg layer at IrMn/MgO interface. Furthermore, the exchange bias field (H{sub eb}) was increased as well by the control of interfacial structures. The evidence for a significant fraction of Mn-O bonding at IrMn/MgO interface without Mg insertion layer was provided by X-ray photoelectron spectroscopy. The bonding between Mn and O can decrease the antiferromagnetism of IrMn film, leading to lower value of T{sub B} in Pt/NiFe/IrMn/MgO/Pt multilayers. Ultrathin Mg film inserted at IrMn/MgO interface actingmore » as an oxygen sinking layer can suppress the oxidation reactions between Mn and O and reduce the formation of Mn-O bonding greatly. The oxidation suppression results in the recovery of the antiferromagnetism of IrMn film, which can enhance T{sub B} and H{sub eb}. Furthermore, the high resolution transmission electron microscopy demonstrates that the Mg insertion layer can efficiently promote a high-quality MgO (200) texture. This study will enhance the understanding of physics in antiferromagnet-based spintronic devices.« less

Efficient Planar Perovskite Solar Cells Using Passivated Tin Oxide as an Electron Transport Layer.

PubMed

Lee, Yonghui; Lee, Seunghwan; Seo, Gabseok; Paek, Sanghyun; Cho, Kyung Taek; Huckaba, Aron J; Calizzi, Marco; Choi, Dong-Won; Park, Jin-Seong; Lee, Dongwook; Lee, Hyo Joong; Asiri, Abdullah M; Nazeeruddin, Mohammad Khaja

2018-06-01

Planar perovskite solar cells using low-temperature atomic layer deposition (ALD) of the SnO 2 electron transporting layer (ETL), with excellent electron extraction and hole-blocking ability, offer significant advantages compared with high-temperature deposition methods. The optical, chemical, and electrical properties of the ALD SnO 2 layer and its influence on the device performance are investigated. It is found that surface passivation of SnO 2 is essential to reduce charge recombination at the perovskite and ETL interface and show that the fabricated planar perovskite solar cells exhibit high reproducibility, stability, and power conversion efficiency of 20%.

Perovskite solar cells in N-I-P structure with four slot-die-coated layers

PubMed Central

Burkitt, Daniel; Searle, Justin

2018-01-01

The fabrication of perovskite solar cells in an N-I-P structure with compact titanium dioxide blocking, mesoporous titanium dioxide scaffold, single-step perovskite and hole-transport layers deposited using the slot-die coating technique is reported. Devices on fluorine-doped tin oxide-coated glass substrates with evaporated gold top contacts and four slot-die-coated layers are demonstrated, and best cells reach stabilized power conversion efficiencies of 7%. This work demonstrates the suitability of slot-die coating for the production of layers within this perovskite solar cell stack and the potential to transfer to large area and roll-to-roll manufacturing processes. PMID:29892402

Efficient methylammonium lead iodide perovskite solar cells with active layers from 300 to 900 nm

DOE Office of Scientific and Technical Information (OSTI.GOV)

Momblona, C.; Malinkiewicz, O.; Soriano, A.

2014-08-01

Efficient methylammonium lead iodide perovskite-based solar cells have been prepared in which the perovskite layer is sandwiched in between two organic charge transporting layers that block holes and electrons, respectively. This configuration leads to stable and reproducible devices that do not suffer from strong hysteresis effects and when optimized lead to efficiencies close to 15%. The perovskite layer is formed by using a dual-source thermal evaporation method, whereas the organic layers are processed from solution. The dual-source thermal evaporation method leads to smooth films and allows for high precision thickness variations. Devices were prepared with perovskite layer thicknesses ranging frommore » 160 to 900 nm. The short-circuit current observed for these devices increased with increasing perovskite layer thickness. The main parameter that decreases with increasing perovskite layer thickness is the fill factor and as a result optimum device performance is obtained for perovskite layer thickness around 300 nm. However, here we demonstrate that with a slightly oxidized electron blocking layer the fill factor for the solar cells with a perovskite layer thickness of 900 nm increases to the same values as for the devices with thin perovskite layers. As a result the power conversion efficiencies for the cells with 300 and 900 nm are very similar, 12.7% and 12%, respectively.« less

Patterning with metal-oxide EUV photoresist: patterning capability, resist smoothing, trimming, and selective stripping

NASA Astrophysics Data System (ADS)

Mao, Ming; Lazzarino, Frederic; De Schepper, Peter; De Simone, Danilo; Piumi, Daniele; Luong, Vinh; Yamashita, Fumiko; Kocsis, Michael; Kumar, Kaushik

2017-03-01

Inpria metal-oxide photoresist (PR) serves as a thin spin-on patternable hard mask for EUV lithography. Compared to traditional organic photoresists, the ultrathin metal-oxide photoresist ( 12nm after development) effectively mitigates pattern collapse. Because of the high etch resistance of the metal-oxide resist, this may open up significant scope for more aggressive etches, new chemistries, and novel integration schemes. We have previously shown that metal-oxide PR can be successfully used to pattern the block layer for the imec 7-nm technology node[1] and advantageously replace a multiple patterning approach, which significantly reduces the process complexity and effectively decreases the cost. We also demonstrated the formation of 16nm half pitch 1:1 line/space with EUV single print[2], which corresponds to a metal 2 layer for the imec 7-nm technology node. In this paper, we investigate the feasibility of using Inpria's metal-oxide PR for 16nm line/space patterning. In meanwhile, we also explore the different etch process for LWR smoothing, resist trimming and resist stripping.

Interfacial engineering of CuO nanorod/ZnO nanowire hybrid nanostructure photoanode in dye-sensitized solar cell

NASA Astrophysics Data System (ADS)

Kilic, Bayram; Turkdogan, Sunay; Astam, Aykut; Baran, Sümeyra Seniha; Asgin, Mansur; Gur, Emre; Kocak, Yusuf

2018-01-01

Developing efficient and cost-effective photoanode plays a vital role determining the photocurrent and photovoltage in dye-sensitized solar cells (DSSCs). Here, we demonstrate DSSCs that achieve relatively high power conversion efficiencies (PCEs) by using one-dimensional (1D) zinc oxide (ZnO) nanowires and copper (II) oxide (CuO) nanorods hybrid nanostructures. CuO nanorod-based thin films were prepared by hydrothermal method and used as a blocking layer on top of the ZnO nanowires' layer. The use of 1D ZnO nanowire/CuO nanorod hybrid nanostructures led to an exceptionally high photovoltaic performance of DSSCs with a remarkably high open-circuit voltage (0.764 V), short current density (14.76 mA/cm2 under AM1.5G conditions), and relatively high solar to power conversion efficiency (6.18%) . The enhancement of the solar to power conversion efficiency can be explained in terms of the lag effect of the interfacial recombination dynamics of CuO nanorod-blocking layer on ZnO nanowires. This work shows more economically feasible method to bring down the cost of the nano-hybrid cells and promises for the growth of other important materials to further enhance the solar to power conversion efficiency.

Ultraviolet electroluminescence from zinc oxide nanorods/deoxyribonucleic acid hybrid bio light-emitting diode

NASA Astrophysics Data System (ADS)

Gupta, Rohini Bhardwaj; Nagpal, Swati; Arora, Swati; Bhatnagar, Pramod Kumar; Mathur, Parmatma Chandra

2011-01-01

Ultraviolet (UV) light-emitting diode using salmon deoxyribonucleic acid (sDNA)-cetyltrimethylammonium complex as an electron blocking layer and zinc oxide (ZnO) nanorods as emissive material was fabricated. UV emission, which was blue shifted up to 335 nm with respect to the band edge emission of 390 nm, was observed. This blue shift was caused due to accumulation of electrons in the conduction band of ZnO because of a high potential barrier existing at the sDNA/ZnO interface.

Protection of pure iron against high-temperature oxidation using metaborate and metasilicate coatings

DOE Office of Scientific and Technical Information (OSTI.GOV)

Husain, Z.

1993-04-01

Sodium metaborate and metasilicate coatings protect pure iron in the temperature range 800 to 1,000 C. Metaborate and metasilicate inhibit oxidation. Protective vonsenite (4 FeO [times] Fe[sub 2]O[sub 3] [times] B[sub 2]O[sub 3]) forms with metaborate, and protective fayalite (2FeO [times] SiO[sub 2]) forms with metasilicate. It is proposed that noncoherent blocking layers of these compounds effectively decrease the interface area for iron ion diffusion.

On-stack two-dimensional conversion of MoS2 into MoO3

NASA Astrophysics Data System (ADS)

Yeoung Ko, Taeg; Jeong, Areum; Kim, Wontaek; Lee, Jinhwan; Kim, Youngchan; Lee, Jung Eun; Ryu, Gyeong Hee; Park, Kwanghee; Kim, Dogyeong; Lee, Zonghoon; Lee, Min Hyung; Lee, Changgu; Ryu, Sunmin

2017-03-01

Chemical transformation of existing two-dimensional (2D) materials can be crucial in further expanding the 2D crystal palette required to realize various functional heterostructures. In this work, we demonstrate a 2D ‘on-stack’ chemical conversion of single-layer crystalline MoS2 into MoO3 with a precise layer control that enables truly 2D MoO3 and MoO3/MoS2 heterostructures. To minimize perturbation of the 2D morphology, a nonthermal oxidation using O2 plasma was employed. The early stage of the reaction was characterized by a defect-induced Raman peak, drastic quenching of photoluminescence (PL) signals and sub-nm protrusions in atomic force microscopy images. As the reaction proceeded from the uppermost layer to the buried layers, PL and optical second harmonic generation signals showed characteristic modulations revealing a layer-by-layer conversion. The plasma-generated 2D oxides, confirmed as MoO3 by x-ray photoelectron spectroscopy, were found to be amorphous but extremely flat with a surface roughness of 0.18 nm, comparable to that of 1L MoS2. The rate of oxidation quantified by Raman spectroscopy decreased very rapidly for buried sulfide layers due to protection by the surface 2D oxides, exhibiting a pseudo-self-limiting behavior. As exemplified in this work, various on-stack chemical transformations can be applied to other 2D materials in forming otherwise unobtainable materials and complex heterostructures, thus expanding the palette of 2D material building blocks.

Direct Probing of the Dielectric Scavenging-Layer Interface in Oxide Filamentary-Based Valence Change Memory.

PubMed

Celano, Umberto; Op de Beeck, Jonathan; Clima, Sergiu; Luebben, Michael; Koenraad, Paul M; Goux, Ludovic; Valov, Ilia; Vandervorst, Wilfried

2017-03-29

A great improvement in valence change memory performance has been recently achieved by adding another metallic layer to the simple metal-insulator-metal (MIM) structure. This metal layer is often referred to as oxygen exchange layer (OEL) and is introduced between one of the electrodes and the oxide. The OEL is believed to induce a distributed reservoir of defects at the metal-insulator interface thus providing an unlimited availability of building blocks for the conductive filament (CF). However, its role remains elusive and controversial owing to the difficulties to probe the interface between the OEL and the CF. Here, using Scalpel SPM we probe multiple functions of the OEL which have not yet been directly measured, for two popular VCMs material systems: Hf/HfO 2 and Ta/Ta 2 O 5 . We locate and characterize in three-dimensions the volume containing the oxygen exchange layer and the CF with nanometer lateral resolution. We demonstrate that the OEL induces a thermodynamic barrier for the CF and estimate the minimum thickness of the OEL/oxide interface to guarantee the proper switching operations is ca. 3 nm. Our experimental observations are combined to first-principles thermodynamics and defect kinetics to elucidate the role of the OEL for device optimization.

Induced nano-scale self-formed metal-oxide interlayer in amorphous silicon tin oxide thin film transistors.

PubMed

Liu, Xianzhe; Xu, Hua; Ning, Honglong; Lu, Kuankuan; Zhang, Hongke; Zhang, Xiaochen; Yao, Rihui; Fang, Zhiqiang; Lu, Xubing; Peng, Junbiao

2018-03-07

Amorphous Silicon-Tin-Oxide thin film transistors (a-STO TFTs) with Mo source/drain electrodes were fabricated. The introduction of a ~8 nm MoO x interlayer between Mo electrodes and a-STO improved the electron injection in a-STO TFT. Mo adjacent to the a-STO semiconductor mainly gets oxygen atoms from the oxygen-rich surface of a-STO film to form MoO x interlayer. The self-formed MoO x interlayer acting as an efficient interface modification layer could conduce to the stepwise internal transport barrier formation while blocking Mo atoms diffuse into a-STO layer, which would contribute to the formation of ohmic contact between Mo and a-STO film. It can effectively improve device performance, reduce cost and save energy for the realization of large-area display with high resolution in future.

Landfill gas distribution at the base of passive methane oxidation biosystems: Transient state analysis of several configurations.

PubMed

Ahoughalandari, Bahar; Cabral, Alexandre R

2017-11-01

The design process of passive methane oxidation biosystems needs to include design criteria that account for the effect of unsaturated hydraulic behavior on landfill gas migration, in particular, restrictions to landfill gas flow due to the capillary barrier effect, which can greatly affect methane oxidation rates. This paper reports the results of numerical simulations performed to assess the landfill gas flow behavior of several passive methane oxidation biosystems. The concepts of these biosystems were inspired by selected configurations found in the technical literature. We adopted the length of unrestricted gas migration (LUGM) as the main design criterion in this assessment. LUGM is defined as the length along the interface between the methane oxidation and gas distribution layers, where the pores of the methane oxidation layer material can be considered blocked for all practical purposes. High values of LUGM indicate that landfill gas can flow easily across this interface. Low values of LUGM indicate greater chances of having preferential upward flow and, consequently, finding hotspots on the surface. Deficient designs may result in the occurrence of hotspots. One of the designs evaluated included an alternative to a concept recently proposed where the interface between the methane oxidation and gas distribution layers was jagged (in the form of a see-saw). The idea behind this ingenious concept is to prevent blockage of air-filled pores in the upper areas of the jagged segments. The results of the simulations revealed the extent of the capability of the different scenarios to provide unrestricted and conveniently distributed upward landfill gas flow. They also stress the importance of incorporating an appropriate design criterion in the selection of the methane oxidation layer materials and the geometrical form of passive biosystems. Copyright © 2017 Elsevier Ltd. All rights reserved.

Issues Concerning the Oxidation of Ni(Pt)Ti Shape Memory Alloys

NASA Technical Reports Server (NTRS)

Smialek, James

2011-01-01

The oxidation behavior of the Ni-30Pt-50Ti high temperature shape memory alloy is compared to that of conventional NiTi nitinol SMAs. The oxidation rates were 1/4 those of NiTi under identical conditions. Ni-Ti-X SMAs are dominated by TiO2 scales, but, in some cases, the activation energy diverges for unexplained reasons. Typically, islands of metallic Ni or Pt(Ni) particles are embedded in lower scale layers due to rapid selective growth of TiO2 and low oxygen potential within the scale. The blocking effect of Pt-rich particles and lower diffusivity of Pt-rich depletion zones are proposed to account for the reduction in oxidation rates.

Electrochemical growth of CoNi and Pt-CoNi soft magnetic composites on an alkanethiol monolayer-modified ITO substrate.

PubMed

Escalera-López, D; Gómez, E; Vallés, E

2015-07-07

CoNi and Pt-CoNi magnetic layers on indium-tin oxide (ITO) substrates modified by an alkanethiol self-assembled monolayer (SAM) have been electrochemically obtained as an initial stage to prepare semiconducting layer-SAM-magnetic layer hybrid structures. The best conditions to obtain the maximum compactness of adsorbed layers of dodecanethiol (C12-SH) on ITO substrate have been studied using contact angle, AFM, XPS and electrochemical tests. The electrochemical characterization (electrochemical probe or voltammetric response in blank solutions) is fundamental to ensure the maximum blocking of the substrate. Although the electrodeposition process on the SAM-modified ITO substrate is very slow if the blocking of the surface is significant, non-cracked metallic layers of CoNi, with or without a previously electrodeposited seed-layer of platinum, have been obtained by optimizing the deposition potentials. Initial nucleation is expected to take place at the pinhole defects of the C12-SH SAM, followed by a mushroom-like growth regime through the SAM interface that allows the formation of a continuous metallic layer electrically connected to the ITO surface. Due to the potential of the methodology, the preparation of patterned metallic deposits on ITO substrate using SAMs with different coverage as templates is feasible.

Meniscus-force-mediated layer transfer technique using single-crystalline silicon films with midair cavity: Application to fabrication of CMOS transistors on plastic substrates

NASA Astrophysics Data System (ADS)

Sakaike, Kohei; Akazawa, Muneki; Nakagawa, Akitoshi; Higashi, Seiichiro

2015-04-01

A novel low-temperature technique for transferring a silicon-on-insulator (SOI) layer with a midair cavity (supported by narrow SiO2 columns) by meniscus force has been proposed, and a single-crystalline Si (c-Si) film with a midair cavity formed in dog-bone shape was successfully transferred to a poly(ethylene terephthalate) (PET) substrate at its heatproof temperature or lower. By applying this proposed transfer technique, high-performance c-Si-based complementary metal-oxide-semiconductor (CMOS) transistors were successfully fabricated on the PET substrate. The key processes are the thermal oxidation and subsequent hydrogen annealing of the SOI layer on the midair cavity. These processes ensure a good MOS interface, and the SiO2 layer works as a “blocking” layer that blocks contamination from PET. The fabricated n- and p-channel c-Si thin-film transistors (TFTs) on the PET substrate showed field-effect mobilities of 568 and 103 cm2 V-1 s-1, respectively.

Neutronic reactor thermal shield

DOEpatents

Lowe, Paul E.

1976-06-15

1. The combination with a plurality of parallel horizontal members arranged in horizontal and vertical rows, the spacing of the members in all horizontal rows being equal throughout, the spacing of the members in all vertical rows being equal throughout; of a shield for a nuclear reactor comprising two layers of rectangular blocks through which the members pass generally perpendicularly to the layers, each block in each layer having for one of the members an opening equally spaced from vertical sides of the block and located closer to the top of the block than the bottom thereof, whereby gravity tends to make each block rotate about the associated member to a position in which the vertical sides of the block are truly vertical, the openings in all the blocks of one layer having one equal spacing from the tops of the blocks, the openings in all the blocks of the other layer having one equal spacing from the tops of the blocks, which spacing is different from the corresponding spacing in the said one layer, all the blocks of both layers having the same vertical dimension or length, the blocks of both layers consisting of relatively wide blocks and relatively narrow blocks, all the narrow blocks having the same horizontal dimension or width which is less than the horizontal dimension or width of the wide blocks, which is the same throughout, each layer consisting of vertical rows of narrow blocks and wide blocks alternating with one another, each vertical row of narrow blocks of each layer being covered by a vertical row of wide blocks of the other layer which wide blocks receive the same vertical row of members as the said each vertical row of narrow blocks, whereby the rectangular perimeters of each block of each layer is completely out of register with that of each block in the other layer.

Nano-oxide-layer insertion and specular effects in spin valves: Experiment and theory

NASA Astrophysics Data System (ADS)

Wang, L.; Qiu, J. J.; McMahon, W. J.; Li, K. B.; Wu, Y. H.

2004-06-01

We report a systematic study of NOL (nano-oxide-layer) insertion and specular effects on the giant magnetoresistance (GMR) of single, synthetic, and dual spin valves, using a semiclassical Boltzmann theory. It is confirmed that the GMR ratio is enhanced by NOL insertion inside the pinned layer or after the free layer. The enhancements are primarily due to the contribution of the majority carriers. The NOL insertions inside the inactive layers of spin valves such as the seed, under, and capping layers reduce the GMR ratio. Though introducing a NOL before or after the Cu spacer would, in principle, significantly suppress the GMR ratio due to the blocking effect or the average effect of different spin channels, large positive or negative (inverse) GMR is found by assuming spin-dependent NOL specular reflections. We have also demonstrated that specular reflection, even beyond a capping layer, may result in reduction of GMR. Upon appropriate NOL insertion, the amplitude of curve of GMR versus thickness of individual layer of spin valves may be generally enhanced, but the shape may change, depending on whether the distance of the NOL to the layer is small or large (distance effect). Finally, it is found that most results obtained for the single realistic spin valves are applicable to synthetic and dual spin valves.

Thermoelectric misfit-layered cobalt oxides with interlayers of hydroxide and peroxide species

NASA Astrophysics Data System (ADS)

Chou, Ta-Lei; Lybeck, Jenni; Chan, Ting-Shan; Hsu, Ying-Ya; Tewari, Girish C.; Rautama, Eeva-Leena; Yamauchi, Hisao; Karppinen, Maarit

2013-12-01

Among the thermoelectric misfit-layered cobalt oxides, [MmA2Om+2]qCoO2, the parent m=0 phases exhibit divergent chemical features but are less understood than the more common m>0 members of the series. Here we synthesize Sr-for-Ca substituted [(Ca1-xSrx)z(O,OH)2]qCoO2 zero phases up to x=0.2 through low-temperature hydrothermal conversion of precursor powders of the m=1 misfit system, [Co(Ca1-xSrx)2O3]qCoO2. In the zero-phase [(Ca1-xSrx)z(O,OH)2]qCoO2 system, as the Sr content x increases the lattice expands anisotropically along the c axis such that the ab-plane dimension and the misfit parameter q remain essentially constant. X-ray absorption spectroscopy data suggest the presence of peroxide-type oxygen species in the (Ca1-xSrx)z(O,OH)2 rock-salt block and together with infrared spectroscopy, thermogravimetric and low-temperature resistivity and thermopower measurements evidence that the isovalent Sr-for-Ca substitution controls the balance between the peroxide and hydroxide species in the (Ca1-xSrx)z(O,OH)2 block but leaves the valence of Co essentially intact in the CoO2 block. The higher electrical conductivity of the Sr-substituted phases is explained as a consequence of increased carrier mobility.

Controlled Phase and Tunable Magnetism in Ordered Iron Oxide Nanotube Arrays Prepared by Atomic Layer Deposition

NASA Astrophysics Data System (ADS)

Zhang, Yijun; Liu, Ming; Peng, Bin; Zhou, Ziyao; Chen, Xing; Yang, Shu-Ming; Jiang, Zhuang-De; Zhang, Jie; Ren, Wei; Ye, Zuo-Guang

2016-01-01

Highly-ordered and conformal iron oxide nanotube arrays on an atomic scale are successfully prepared by atomic layer deposition (ALD) with controlled oxidization states and tunable magnetic properties between superparamagnetism and ferrimagnetism. Non-magnetic α-Fe2O3 and superparamagnetic Fe3O4 with a blocking temperature of 120 K are in-situ obtained by finely controlling the oxidation reaction. Both of them exhibit a very small grain size of only several nanometers due to the nature of atom-by-atom growth of the ALD technique. Post-annealing α-Fe2O3 in a reducing atmosphere leads to the formation of the spinel Fe3O4 phase which displays a distinct ferrimagnetic anisotropy and the Verwey metal-insulator transition that usually takes place only in single crystal magnetite or thick epitaxial films at low temperatures. The ALD deposition of iron oxide with well-controlled phase and tunable magnetism demonstrated in this work provides a promising opportunity for the fabrication of 3D nano-devices to be used in catalysis, spintronics, microelectronics, data storages and bio-applications.

Influence of different TiO2 blocking films on the photovoltaic performance of perovskite solar cells

NASA Astrophysics Data System (ADS)

Zhang, Chenxi; Luo, Yudan; Chen, Xiaohong; Ou-Yang, Wei; Chen, Yiwei; Sun, Zhuo; Huang, Sumei

2016-12-01

Organolead trihalide perovskite materials have been successfully used as light absorbers in efficient photovoltaic (PV) cells. Cell structures based on mesoscopic metal oxides and planar heterojunctions have already demonstrated very impressive and brisk advances, holding great potential to grow into a mature PV technology. High power conversion efficiency (PCE) values have been obtained from the mesoscopic configuration in which a few hundred nano-meter thick mesoporous scaffold (e.g. TiO2 or Al2O3) infiltrated by perovskite absorber was sandwiched between the electron and hole transport layers. A uniform and compact hole-blocking layer is necessary for high efficient perovskite-based thin film solar cells. In this study, we investigated the characteristics of TiO2 compact layer using various methods and its effects on the PV performance of perovskite solar cells. TiO2 compact layer was prepared by a sol-gel method based on titanium isopropoxide and HCl, spin-coating of titanium diisopropoxide bis (acetylacetonate), screen-printing of Dyesol's bocking layer titania paste, and a chemical bath deposition (CBD) technique via hydrolysis of TiCl4, respectively. The morphological and micro-structural properties of the formed compact TiO2 layers were characterized by scanning electronic microscopy and X-ray diffraction. The analyses of devices performance characteristics showed that surface morphologies of TiO2 compact films played a critical role in affecting the efficiencies. The nanocrystalline TiO2 film deposited via the CBD route acts as the most efficient hole-blocking layer and achieves the best performance in perovskite solar cells. The CBD-based TiO2 compact and dense layer offers a small series resistance and a large recombination resistance inside the device, and makes it possible to achieve a high power conversion efficiency of 12.80%.

In2Ga2ZnO7 oxide semiconductor based charge trap device for NAND flash memory.

PubMed

Hwang, Eun Suk; Kim, Jun Shik; Jeon, Seok Min; Lee, Seung Jun; Jang, Younjin; Cho, Deok-Yong; Hwang, Cheol Seong

2018-04-01

The programming characteristics of charge trap flash memory device adopting amorphous In 2 Ga 2 ZnO 7 (a-IGZO) oxide semiconductors as channel layer were evaluated. Metal-organic chemical vapor deposition (MOCVD) and RF-sputtering processes were used to grow a 45 nm thick a-IGZO layer on a 20 nm thick SiO 2 (blocking oxide)/p ++ -Si (control gate) substrate, where 3 nm thick atomic layer deposited Al 2 O 3 (tunneling oxide) and 5 nm thick low-pressure CVD Si 3 N 4 (charge trap) layers were intervened between the a-IGZO and substrate. Despite the identical stoichiometry and other physicochemical properties of the MOCVD and sputtered a-IGZO, a much faster programming speed of MOCVD a-IGZO was observed. A comparable amount of oxygen vacancies was found in both MOCVD and sputtered a-IGZO, confirmed by x-ray photoelectron spectroscopy and bias-illumination-instability test measurements. Ultraviolet photoelectron spectroscopy analysis revealed a higher Fermi level (E F ) of the MOCVD a-IGZO (∼0.3 eV) film than that of the sputtered a-IGZO, which could be ascribed to the higher hydrogen concentration in the MOCVD a-IGZO film. Since the programming in a flash memory device is governed by the tunneling of electrons from the channel to charge trapping layer, the faster programming performance could be the result of a higher E F of MOCVD a-IGZO.

In2Ga2ZnO7 oxide semiconductor based charge trap device for NAND flash memory

NASA Astrophysics Data System (ADS)

Hwang, Eun Suk; Kim, Jun Shik; Jeon, Seok Min; Lee, Seung Jun; Jang, Younjin; Cho, Deok-Yong; Hwang, Cheol Seong

2018-04-01

The programming characteristics of charge trap flash memory device adopting amorphous In2Ga2ZnO7 (a-IGZO) oxide semiconductors as channel layer were evaluated. Metal-organic chemical vapor deposition (MOCVD) and RF-sputtering processes were used to grow a 45 nm thick a-IGZO layer on a 20 nm thick SiO2 (blocking oxide)/p++-Si (control gate) substrate, where 3 nm thick atomic layer deposited Al2O3 (tunneling oxide) and 5 nm thick low-pressure CVD Si3N4 (charge trap) layers were intervened between the a-IGZO and substrate. Despite the identical stoichiometry and other physicochemical properties of the MOCVD and sputtered a-IGZO, a much faster programming speed of MOCVD a-IGZO was observed. A comparable amount of oxygen vacancies was found in both MOCVD and sputtered a-IGZO, confirmed by x-ray photoelectron spectroscopy and bias-illumination-instability test measurements. Ultraviolet photoelectron spectroscopy analysis revealed a higher Fermi level (E F) of the MOCVD a-IGZO (∼0.3 eV) film than that of the sputtered a-IGZO, which could be ascribed to the higher hydrogen concentration in the MOCVD a-IGZO film. Since the programming in a flash memory device is governed by the tunneling of electrons from the channel to charge trapping layer, the faster programming performance could be the result of a higher E F of MOCVD a-IGZO.

Fabrication of current confinement aperture structure by transforming a conductive GaN:Si epitaxial layer into an insulating GaOx layer.

PubMed

Lin, Chia-Feng; Lee, Wen-Che; Shieh, Bing-Cheng; Chen, Danti; Wang, Dili; Han, Jung

2014-12-24

We report here a simple and robust process to convert embedded conductive GaN epilayers into insulating GaOx and demonstrate its efficacy in vertical current blocking and lateral current steering in a working LED device. The fabrication processes consist of laser scribing, electrochemical (EC) wet-etching, photoelectrochemical (PEC) oxidation, and thermal oxidization of a sacrificial n(+)-GaN:Si layer. The conversion of GaN is made possible through an intermediate stage of porosification where the standard n-type GaN epilayers can be laterally and selectively anodized into a nanoporous (NP) texture while keeping the rest of the layers intact. The fibrous texture of NP GaN with an average wall thickness of less than 100 nm dramatically increases the surface-to-volume ratio and facilitates a rapid oxidation process of GaN into GaOX. The GaOX aperture was formed on the n-side of the LED between the active region and the n-type GaN layer. The wavelength blueshift phenomena of electroluminescence spectra is observed in the treated aperture-emission LED structure (441.5 nm) when compared to nontreated LED structure (443.7 nm) at 0.1 mA. The observation of aperture-confined electroluminescence from an InGaN LED structure suggests that the NP GaN based oxidation will play an enabling role in the design and fabrication of III-nitride photonic devices.

Solid oxide fuel cell matrix and modules

DOEpatents

Riley, Brian

1990-01-01

Porous refractory ceramic blocks arranged in an abutting, stacked configuration and forming a three dimensional array provide a support structure and coupling means for a plurality of solid oxide fuel cells (SOFCs). Each of the blocks includes a square center channel which forms a vertical shaft when the blocks are arranged in a stacked array. Positioned within the channel is a SOFC unit cell such that a plurality of such SOFC units disposed within a vertical shaft form a string of SOFC units coupled in series. A first pair of facing inner walls of each of the blocks each include an interconnecting channel hole cut horizontally and vertically into the block walls to form gas exit channels. A second pair of facing lateral walls of each block further include a pair of inner half circular grooves which form sleeves to accommodate anode fuel and cathode air tubes. The stack of ceramic blocks is self-supporting, with a plurality of such stacked arrays forming a matrix enclosed in an insulating refractory brick structure having an outer steel layer. The necessary connections for air, fuel, burnt gas, and anode and cathode connections are provided through the brick and steel outer shell. The ceramic blocks are so designed with respect to the strings of modules that by simple and logical design the strings could be replaced by hot reloading if one should fail. The hot reloading concept has not been included in any previous designs.

Thermoelectric misfit-layered cobalt oxides with interlayers of hydroxide and peroxide species

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chou, Ta-Lei; Lybeck, Jenni; Chan, Ting-Shan

Among the thermoelectric misfit-layered cobalt oxides, [M{sub m}A{sub 2}O{sub m+2}]{sub q}CoO{sub 2}, the parent m=0 phases exhibit divergent chemical features but are less understood than the more common m>0 members of the series. Here we synthesize Sr-for-Ca substituted [(Ca{sub 1−x}Sr{sub x}){sub z}(O,OH){sub 2}]{sub q}CoO{sub 2} zero phases up to x=0.2 through low-temperature hydrothermal conversion of precursor powders of the m=1 misfit system, [Co(Ca{sub 1−x}Sr{sub x}){sub 2}O{sub 3}]{sub q}CoO{sub 2}. In the zero-phase [(Ca{sub 1−x}Sr{sub x}){sub z}(O,OH){sub 2}]{sub q}CoO{sub 2} system, as the Sr content x increases the lattice expands anisotropically along the c axis such that the ab-plane dimension andmore » the misfit parameter q remain essentially constant. X-ray absorption spectroscopy data suggest the presence of peroxide-type oxygen species in the (Ca{sub 1−x}Sr{sub x}){sub z}(O,OH){sub 2} rock-salt block and together with infrared spectroscopy, thermogravimetric and low-temperature resistivity and thermopower measurements evidence that the isovalent Sr-for-Ca substitution controls the balance between the peroxide and hydroxide species in the (Ca{sub 1−x}Sr{sub x}){sub z}(O,OH){sub 2} block but leaves the valence of Co essentially intact in the CoO{sub 2} block. The higher electrical conductivity of the Sr-substituted phases is explained as a consequence of increased carrier mobility. - Graphical abstract: Among the thermoelectric misfit-layered cobalt oxides, [M{sub m}A{sub 2}O{sub m+2}]{sub q}CoO{sub 2}, the parent zero (m=0) phases exhibit divergent chemical features. For [(Ca{sub 1−x}Sr{sub x}){sub z}(O,OH){sub 2}]{sub q}CoO{sub 2}, X-ray absorption spectroscopy data suggest the presence of peroxide-type oxygen species in the (Ca{sub 1−x}Sr{sub x}){sub z}(O,OH){sub 2} rock-salt block and together with thermogravimetric and low-temperature transport-property measurements evidence that the isovalent Sr-for-Ca substitution controls the balance between the peroxide and hydroxide species in the (Ca{sub 1−x}Sr{sub x}){sub z}(O,OH){sub 2} block but leaves the valence of Co essentially intact in the CoO{sub 2} block. - Highlights: • Parent m=0 [M{sub m}A{sub 2}O{sub m+2}]{sub q}CoO{sub 2} misfit-layer oxides exhibit divergent chemical features. • [(Ca,Sr){sub z}(O,OH){sub 2}]{sub q}CoO{sub 2} is found to contain both peroxide and hydroxide species. • Hydrothermal synthesis yields [(Ca{sub 1−x}Sr{sub x}){sub z}(O,OH){sub 2}]{sub q}CoO{sub 2} samples up to x=0.2. • With increasing x, the c axis expands but the misfit parameter q remains constant. • Co valence remains intact, but peroxide and hydroxide contents may be affected.« less

Numerical Analysis of Convection/Transpiration Cooling

NASA Technical Reports Server (NTRS)

Glass, David E.; Dilley, Arthur D.; Kelly, H. Neale

1999-01-01

An innovative concept utilizing the natural porosity of refractory-composite materials and hydrogen coolant to provide CONvective and TRANspiration (CONTRAN) cooling and oxidation protection has been numerically studied for surfaces exposed to a high heat flux, high temperature environment such as hypersonic vehicle engine combustor walls. A boundary layer code and a porous media finite difference code were utilized to analyze the effect of convection and transpiration cooling on surface heat flux and temperature. The boundary, layer code determined that transpiration flow is able to provide blocking of the surface heat flux only if it is above a minimum level due to heat addition from combustion of the hydrogen transpirant. The porous media analysis indicated that cooling of the surface is attained with coolant flow rates that are in the same range as those required for blocking, indicating that a coupled analysis would be beneficial.

Electrophoretic build-up of alternately multilayered films and micropatterns based on graphene sheets and nanoparticles and their applications in flexible supercapacitors.

PubMed

Niu, Zhiqiang; Du, Jianjun; Cao, Xuebo; Sun, Yinghui; Zhou, Weiya; Hng, Huey Hoon; Ma, Jan; Chen, Xiaodong; Xie, Sishen

2012-10-22

Graphene nanosheets and metal nanoparticles (NPs) have been used as nano-building-blocks for assembly into macroscale hybrid structures with promising performance in electrical devices. However, in most graphene and metal NP hybrid structures, the graphene sheets and metal NPs (e.g., AuNPs) do not enable control of the reaction process, orientation of building blocks, and organization at the nanoscale. Here, an electrophoretic layer-by-layer assembly for constructing multilayered reduced graphene oxide (RGO)/AuNP films and lateral micropatterns is presented. This assembly method allows easy control of the nano-architecture of building blocks along the normal direction of the film, including the number and thickness of RGO and AuNP layers, in addition to control of the lateral orientation of the resultant multilayered structures. Conductivity of multilayered RGO/AuNP hybrid nano-architecture shows great improvement caused by a bridging effect of the AuNPs along the out-of-plane direction between the upper and lower RGO layers. The results clearly show the potential of electrophoretic build-up in the fabrication of graphene-based alternately multilayered films and patterns. Finally, flexible supercapacitors based on multilayered RGO/AuNP hybrid films are fabricated, and excellent performance, such as high energy and power densities, are achieved. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Limits of ZnO Electrodeposition in Mesoporous Tin Doped Indium Oxide Films in View of Application in Dye-Sensitized Solar Cells

PubMed Central

Dunkel, Christian; von Graberg, Till; Smarsly, Bernd M.; Oekermann, Torsten; Wark, Michael

2014-01-01

Well-ordered 3D mesoporous indium tin oxide (ITO) films obtained by a templated sol-gel route are discussed as conductive porous current collectors. This paper explores the use of such films modified by electrochemical deposition of zinc oxide (ZnO) on the pore walls to improve the electron transport in dye-sensitized solar cells (DSSCs). Mesoporous ITO film were dip-coated with pore sizes of 20–25 nm and 40–45 nm employing novel poly(isobutylene)-b-poly(ethylene oxide) block copolymers as structure-directors. After electrochemical deposition of ZnO and sensitization with the indoline dye D149 the films were tested as photoanodes in DSSCs. Short ZnO deposition times led to strong back reaction of photogenerated electrons from non-covered ITO to the electrolyte. ITO films with larger pores enabled longer ZnO deposition times before pore blocking occurred, resulting in higher efficiencies, which could be further increased by using thicker ITO films consisting of five layers, but were still lower compared to nanoporous ZnO films electrodeposited on flat ITO. The major factors that currently limit the application are the still low thickness of the mesoporous ITO films, too small pore sizes and non-ideal geometries that do not allow obtaining full coverage of the ITO surface with ZnO before pore blocking occurs. PMID:28788618

Effect of shell thickness on the exchange bias blocking temperature and coercivity in Co-CoO core-shell nanoparticles

NASA Astrophysics Data System (ADS)

Thomas, S.; Reethu, K.; Thanveer, T.; Myint, M. T. Z.; Al-Harthi, S. H.

2017-08-01

The exchange bias blocking temperature distribution of naturally oxidized Co-CoO core-shell nanoparticles exhibits two distinct signatures. These are associated with the existence of two magnetic entities which are responsible for the temperature dependence of an exchange bias field. One is from the CoO grains which undergo thermally activated magnetization reversal. The other is from the disordered spins at the Co-CoO interface which exhibits spin-glass-like behavior. We investigated the oxide shell thickness dependence of the exchange bias effect. For particles with a 3 nm thick CoO shell, the predominant contribution to the temperature dependence of exchange bias is the interfacial spin-glass layer. On increasing the shell thickness to 4 nm, the contribution from the spin-glass layer decreases, while upholding the antiferromagnetic grain contribution. For samples with a 4 nm CoO shell, the exchange bias training was minimal. On the other hand, 3 nm samples exhibited both the training effect and a peak in coercivity at an intermediate set temperature Ta. This is explained using a magnetic core-shell model including disordered spins at the interface.

Energy resolution in semiconductor gamma radiation detectors using heterojunctions and methods of use and preparation thereof

DOEpatents

Nikolic, Rebecca J.; Conway, Adam M.; Nelson, Art J.; Payne, Stephen A.

2012-09-04

In one embodiment, a system comprises a semiconductor gamma detector material and a hole blocking layer adjacent the gamma detector material, the hole blocking layer resisting passage of holes therethrough. In another embodiment, a system comprises a semiconductor gamma detector material, and an electron blocking layer adjacent the gamma detector material, the electron blocking layer resisting passage of electrons therethrough, wherein the electron blocking layer comprises undoped HgCdTe. In another embodiment, a method comprises forming a hole blocking layer adjacent a semiconductor gamma detector material, the hole blocking layer resisting passage of holes therethrough. Additional systems and methods are also presented.

Amorphous oxide alloys as interfacial layers with broadly tunable electronic structures for organic photovoltaic cells

PubMed Central

Zhou, Nanjia; Kim, Myung-Gil; Loser, Stephen; Smith, Jeremy; Yoshida, Hiroyuki; Guo, Xugang; Song, Charles; Jin, Hosub; Chen, Zhihua; Yoon, Seok Min; Freeman, Arthur J.; Chang, Robert P. H.; Facchetti, Antonio; Marks, Tobin J.

2015-01-01

In diverse classes of organic optoelectronic devices, controlling charge injection, extraction, and blocking across organic semiconductor–inorganic electrode interfaces is crucial for enhancing quantum efficiency and output voltage. To this end, the strategy of inserting engineered interfacial layers (IFLs) between electrical contacts and organic semiconductors has significantly advanced organic light-emitting diode and organic thin film transistor performance. For organic photovoltaic (OPV) devices, an electronically flexible IFL design strategy to incrementally tune energy level matching between the inorganic electrode system and the organic photoactive components without varying the surface chemistry would permit OPV cells to adapt to ever-changing generations of photoactive materials. Here we report the implementation of chemically/environmentally robust, low-temperature solution-processed amorphous transparent semiconducting oxide alloys, In-Ga-O and Ga-Zn-Sn-O, as IFLs for inverted OPVs. Continuous variation of the IFL compositions tunes the conduction band minima over a broad range, affording optimized OPV power conversion efficiencies for multiple classes of organic active layer materials and establishing clear correlations between IFL/photoactive layer energetics and device performance. PMID:26080437

Amorphous oxide alloys as interfacial layers with broadly tunable electronic structures for organic photovoltaic cells

DOE PAGES

Zhou, Nanjia; Kim, Myung -Gil; Loser, Stephen; ...

2015-06-15

In diverse classes of organic optoelectronic devices, controlling charge injection, extraction, and blocking across organic semiconductor– inorganic electrode interfaces is crucial for enhancing quantum efficiency and output voltage. To this end, the strategy of inserting engineered interfacial layers (IFLs) between electrical contacts and organic semiconductors has significantly advanced organic light-emitting diode and organic thin film transistor performance. For organic photovoltaic (OPV) devices, an electronically flexible IFL design strategy to incrementally tune energy level matching between the inorganic electrode system and the organic photoactive components without varying the surface chemistry would permit OPV cells to adapt to ever-changing generations of photoactivemore » materials. Here we report the implementation of chemically/environmentally robust, low-temperature solution-processed amorphous transparent semiconducting oxide alloys, In-Ga-O and Ga-Zn-Sn-O, as IFLs for inverted OPVs. Lastly, continuous variation of the IFL compositions tunes the conduction band minima over a broad range, affording optimized OPV power conversion efficiencies for multiple classes of organic active layer materials and establishing clear correlations between IFL/photoactive layer energetics and device performance.« less

Amorphous oxide alloys as interfacial layers with broadly tunable electronic structures for organic photovoltaic cells.

PubMed

Zhou, Nanjia; Kim, Myung-Gil; Loser, Stephen; Smith, Jeremy; Yoshida, Hiroyuki; Guo, Xugang; Song, Charles; Jin, Hosub; Chen, Zhihua; Yoon, Seok Min; Freeman, Arthur J; Chang, Robert P H; Facchetti, Antonio; Marks, Tobin J

2015-06-30

In diverse classes of organic optoelectronic devices, controlling charge injection, extraction, and blocking across organic semiconductor-inorganic electrode interfaces is crucial for enhancing quantum efficiency and output voltage. To this end, the strategy of inserting engineered interfacial layers (IFLs) between electrical contacts and organic semiconductors has significantly advanced organic light-emitting diode and organic thin film transistor performance. For organic photovoltaic (OPV) devices, an electronically flexible IFL design strategy to incrementally tune energy level matching between the inorganic electrode system and the organic photoactive components without varying the surface chemistry would permit OPV cells to adapt to ever-changing generations of photoactive materials. Here we report the implementation of chemically/environmentally robust, low-temperature solution-processed amorphous transparent semiconducting oxide alloys, In-Ga-O and Ga-Zn-Sn-O, as IFLs for inverted OPVs. Continuous variation of the IFL compositions tunes the conduction band minima over a broad range, affording optimized OPV power conversion efficiencies for multiple classes of organic active layer materials and establishing clear correlations between IFL/photoactive layer energetics and device performance.

Adsorption of copolymers at polymer/air and polymer/solid interfaces

NASA Astrophysics Data System (ADS)

Oslanec, Robert

Using mainly low-energy forward recoil spectrometry (LE-FRES) and neutron reflectivity (NR), copolymer behavior at polymer/air and polymer/solid interfaces is investigated. For a miscible blend of poly(styrene-ran-acrylonitrile) copolymers, the volume fraction profile of the copolymer with lower acrylonitrile content is flat near the surface in contrast to mean field predictions. Including copolymer polydispersity into a self consistent mean field (SCMF) model does not account for this profile shape. LE-FRES and NR is also used to study poly(deuterated styrene-block-methyl-methacrylate) (dPS-b-PMMA) adsorption from a polymer matrix to a silicon oxide substrate. The interfacial excess, zsp*, layer thickness, L, and layer-matrix width, w, depend strongly on the number of matrix segments, P, for P 2N, the matrix chains are repelled from the adsorbed layer and the layer characteristics become independent of P. An SCMF model of block copolymer adsorption is developed. SCMF predictions are in qualitative agreement with the experimental behavior of zsp*, L, and w as a function of P. Using this model, the interaction energy of the MMA block with the oxide substrate is found to be -8ksb{B}T. In a subsequent experiment, the matrix/dPS interaction is made increasingly unfavorable by increasing the 4-bromostyrene mole fraction, x, in a poly(styrene-ran-4-bromostyrene) (PBrsbxS) matrix. Whereas experiments show that zsp* slightly decreases as x increases, the SCMF model predicts that zsp* should increase as the matrix becomes more unfavorable. Upon including a small matrix attraction for the substrate, the SCMF model shows that zsp* decreases with x because of competition between PBrsbxS and dPS-b-PMMA for adsorbing sites. In thin film dewetting experiments on silicon oxide, the addition of dPS-b-PMMA to PS coatings acts to slow hole growth and prevent holes from impinging. Dewetting studies show that longer dPS-b-PMMA chains are more effective stabilizing agents than shorter ones and that 3 volume percent dPS-b-PMMA is the optimum additive concentration for this system. For a dPS-b-PMMA:PS blend, atomic force microscopy of the hole floor reveals mounds of residual polymer and a modulated contact line where the rim meets the substrate.

Membranes with highly ordered straight nanopores by selective swelling of fast perpendicularly aligned block copolymers.

PubMed

Yin, Jun; Yao, Xueping; Liou, Jiun-You; Sun, Wei; Sun, Ya-Sen; Wang, Yong

2013-11-26

Membranes with uniform, straight nanopores have important applications in diverse fields, but their application is limited by the lack of efficient producing methods with high controllability. In this work, we reported on an extremely simple and efficient strategy to produce such well-defined membranes. We demonstrated that neutral solvents were capable of annealing amphiphilic block copolymer (BCP) films of polystyrene-block-poly(2-vinylpyridine) (PS-b-P2VP) with thicknesses up to 600 nm to the perpendicular orientation within 1 min. Annealing in neutral solvents was also effective to the perpendicular alignment of block copolymers with very high molecular weights, e.g., 362 000 Da. Remarkably, simply by immersing the annealed BCP films in hot ethanol followed by drying in air, the originally dense BCP films were nondestructively converted into porous membranes containing highly ordered, straight nanopores traversing the entire thickness of the membrane (up to 1.1 μm). Grazing incident small-angle X-ray spectroscopy confirmed the hexagonal ordering of the nanopores over large areas. We found that the overflow of P2VP chains from their reservoir P2VP cylinders and the deformation of the PS matrix in the swelling process contributed to the transformation of the solid P2VP cylinders to empty straight pores. The pore diameters can be tuned by either changing the swelling temperatures or depositing thin layers of metal oxides on the preformed membranes via atomic layer deposition with a subnanometer accuracy. To demonstrate the application of the obtained porous membranes, we used them as templates and produced centimeter-scale arrays of aligned nanotubes of metal oxides with finely tunable wall thicknesses.

Thickness dependence of the MoO3 blocking layers on ZnO nanorod-inverted organic photovoltaic devices

PubMed Central

Wang, Mingjun; Li, Yuan; Huang, Huihui; Peterson, Eric D.; Nie, Wanyi; Zhou, Wei; Zeng, Wei; Huang, Wenxiao; Fang, Guojia; Sun, Nanhai; Zhao, Xingzhong; Carroll, David L.

2011-01-01

Organic solar cells based on vertically aligned zinc oxide nanorod arrays (ZNR) in an inverted structure of indium tin oxide (ITO)∕ZNR∕poly(3-hexylthiophene): (6,6)-phenyl C61 butyric acid methyl ester(P3HT:PCBM)∕MoO3∕aluminum(Al) were studied. We found that the optimum MoO3 layer thickness condition of 20 nm, the MoO3 can effectively decrease the probability of bimolecular recombination either at the Al interface or within the active layer itself. For this optimum condition we get a power conversion efficiency of 2.15%, a short-circuit current density of 9.02 mA∕cm2, an open-circuit voltage of 0.55V, and a fill factor of 0.44 under 100 mW∕cm2 irradiation. Our investigations also show that the highly crystallized ZNR can create short and continuous pathways for electron transport and increase the contact area between the ZNR and the organic materials. PMID:21464889

The dependence of the modulation transfer function on the blocking layer thickness in amorphous selenium x-ray detectors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hunter, David M.; Belev, Gueorgi; DeCrescenzo, Giovanni

2007-08-15

Blocking layers are used to reduce leakage current in amorphous selenium detectors. The effect of the thickness of the blocking layer on the presampling modulation transfer function (MTF) and on dark current was experimentally determined in prototype single-line CCD-based amorphous selenium (a-Se) x-ray detectors. The sampling pitch of the detectors evaluated was 25 {mu}m and the blocking layer thicknesses varied from 1 to 51 {mu}m. The blocking layers resided on the signal collection electrodes which, in this configuration, were used to collect electrons. The combined thickness of the blocking layer and a-Se bulk in each detector was {approx}200 {mu}m. Asmore » expected, the dark current increased monotonically as the thickness of the blocking layer was decreased. It was found that if the blocking layer thickness was small compared to the sampling pitch, it caused a negligible reduction in MTF. However, the MTF was observed to decrease dramatically at spatial frequencies near the Nyquist frequency as the blocking layer thickness approached or exceeded the electrode sampling pitch. This observed reduction in MTF is shown to be consistent with predictions of an electrostatic model wherein the image charge from the a-Se is trapped at a characteristic depth within the blocking layer, generally near the interface between the blocking layer and the a-Se bulk.« less

Organic photovoltaic cell incorporating electron conducting exciton blocking layers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Forrest, Stephen R.; Lassiter, Brian E.

2014-08-26

The present disclosure relates to photosensitive optoelectronic devices including a compound blocking layer located between an acceptor material and a cathode, the compound blocking layer including: at least one electron conducting material, and at least one wide-gap electron conducting exciton blocking layer. For example, 3,4,9,10 perylenetetracarboxylic bisbenzimidazole (PTCBI) and 1,4,5,8-napthalene-tetracarboxylic-dianhydride (NTCDA) function as electron conducting and exciton blocking layers when interposed between the acceptor layer and cathode. Both materials serve as efficient electron conductors, leading to a fill factor as high as 0.70. By using an NTCDA/PTCBI compound blocking layer structure increased power conversion efficiency is achieved, compared to anmore » analogous device using a conventional blocking layers shown to conduct electrons via damage-induced midgap states.« less

Controlled Phase and Tunable Magnetism in Ordered Iron Oxide Nanotube Arrays Prepared by Atomic Layer Deposition

DOE PAGES

Zhang, Yijun; Liu, Ming; Peng, Bin; ...

2016-01-27

Highly-ordered and conformal iron oxide nanotube arrays on an atomic scale are successfully prepared by atomic layer deposition (ALD) with controlled oxidization states and tunable magnetic properties between superparamagnetism and ferrimagnetism. Non-magnetic α-Fe 2O 3 and superparamagnetic Fe 2O 3with a blocking temperature of 120 K are in-situ obtained by finely controlling the oxidation reaction. Both of them exhibit a very small grain size of only several nanometers due to the nature of atom-by-atom growth of the ALD technique. Post-annealing α-Fe 2O 3 in a reducing atmosphere leads to the formation of the spinel Fe 3O 4 phase which displaysmore » a distinct ferrimagnetic anisotropy and the Verwey metal-insulator transition that usually takes place only in single crystal magnetite or thick epitaxial films at low temperatures. Finally, the ALD deposition of iron oxide with well-controlled phase and tunable magnetism demonstrated in this work provides a promising opportunity for the fabrication of 3D nano-devices to be used in catalysis, spintronics, microelectronics, data storages and bio-applications.« less

Cobalt germanide nanostructure formation and memory characteristic enhancement in silicon oxide films

NASA Astrophysics Data System (ADS)

Joo, Beom Soo; Kim, Hyunseung; Jang, Seunghun; Han, Dongwoo; Han, Moonsup

2018-08-01

We investigated nano-floating gate memory having a charge trap layer (CTL) composed of cobalt germanide nanostructure (ns-CoGe). A tunneling oxide layer; a CTL containing Co, Ge, and Si; and a blocking oxide layer were sequentially deposited on a p-type silicon substrate by RF magnetron sputtering and low-pressure chemical vapor deposition. We optimized the CTL formation conditions by rapid thermal annealing at a somewhat low temperature (about 830 °C) by considering the differences in Gibbs free energy and chemical enthalpy among the components. To characterize the charge storage properties, capacitance-voltage (C-V) measurements were performed. Further, we used X-ray photoelectron spectroscopy for chemical analysis of the CTL. In this work, we not only report that the C-V measurement shows a remarkable opening of the memory window for the ns-CoGe compared with those of nanostructures composed of Co or Ge alone, but also clarify that the improvement in the memory characteristics originates in the nanostructure formation, which consists mainly of Co-Ge bonds. We expect ns-CoGe to be a strong candidate for fabrication of next-generation memory devices.

Highly efficient solution-processed phosphorescent organic light-emitting devices with double-stacked hole injection layers

NASA Astrophysics Data System (ADS)

Chen, Yuehua; Hao, Lin; Zhang, Xinwen; Zhang, Xiaolin; Liu, Mengjiao; Zhang, Mengke; Wang, Jiong; Lai, Wen-Yong; Huang, Wei

2017-08-01

In this paper, solution-processed nickel oxide (NiOx) is used as hole-injection layers (HILs) in solution-processed phosphorescent organic light-emitting diodes (PhOLEDs). Serious exciton quenching is verified at the NiOx/emitting layer (EML) interface, resulting in worse device performance. The device performance is significantly improved by inserting a layer of poly(3,4-ethylenedioxythiophene):poly(styrenesulfonic acid) (PEDOT:PSS) between the EML and NiOx. The solution-processed blue PhOLED with the double-stacked NiOx/PEDOT:PSS HILs shows a maximum current efficiency of 30.5 cd/A, which is 75% and 30% higher than those of the devices with a single NiOx HIL and a PEDOT:PSS HIL, respectively. Improvement of device efficiency can be attributed to reducing exciton quenching of the PEDOT:PSS layer as well as the electron blocking effect of the NiOx layer.

Efficient and Air-Stable Planar Perovskite Solar Cells Formed on Graphene-Oxide-Modified PEDOT:PSS Hole Transport Layer

NASA Astrophysics Data System (ADS)

Luo, Hui; Lin, Xuanhuai; Hou, Xian; Pan, Likun; Huang, Sumei; Chen, Xiaohong

2017-10-01

As a hole transport layer, PEDOT:PSS usually limits the stability and efficiency of perovskite solar cells (PSCs) due to its hygroscopic nature and inability to block electrons. Here, a graphene-oxide (GO)-modified PEDOT:PSS hole transport layer was fabricated by spin-coating a GO solution onto the PEDOT:PSS surface. PSCs fabricated on a GO-modified PEDOT:PSS layer exhibited a power conversion efficiency (PCE) of 15.34%, which is higher than 11.90% of PSCs with the PEDOT:PSS layer. Furthermore, the stability of the PSCs was significantly improved, with the PCE remaining at 83.5% of the initial PCE values after aging for 39 days in air. The hygroscopic PSS material at the PEDOT:PSS surface was partly removed during spin-coating with the GO solution, which improves the moisture resistance and decreases the contact barrier between the hole transport layer and perovskite layer. The scattered distribution of the GO at the PEDOT:PSS surface exhibits superior wettability, which helps to form a high-quality perovskite layer with better crystallinity and fewer pin holes. Furthermore, the hole extraction selectivity of the GO further inhibits the carrier recombination at the interface between the perovskite and PEDOT:PSS layers. Therefore, the cooperative interactions of these factors greatly improve the light absorption of the perovskite layer, the carrier transport and collection abilities of the PSCs, and especially the stability of the cells.

Quantum chemical study of arsenic (III, V) adsorption on Mn-oxides: implications for arsenic(III) oxidation.

PubMed

Zhu, Mengqiang; Paul, Kristian W; Kubicki, James D; Sparks, Donald L

2009-09-01

Density functional theory (DFT) calculations were used to investigate As(V) and As(III) surface complex structures and reaction energies on both Mn(III) and Mn(IV) sites in an attempt to better understand As(III) oxidation bybirnessite, a layered Mn-dioxide mineral. Edge-sharing dioctahedral Mn(III) and Mn(IV) clusters with different combinations of surface functional groups (>MnOH and >MnOH2) were employed to mimic pH variability. Results show that As(V) adsorption was more thermodynamically favorable than As(III) adsorption on both Mn(III) and Mn(IV) surface sites under simulated acidic pH conditions. Therefore, we propose that As(V) adsorption inhibits As(III) oxidation by blocking adsorption sites. Under simulated acidic pH conditions, Mn(IV) sites exhibited stronger adsorption affinity than Mn(III) sites for both As(III) and As(V). Overall, we hypothesize that Mn(III) sites are less reactive in terms of As(III) oxidation due to their lower affinity for As(III) adsorption, higher potential to be blocked by As(V) complexes, and slower electron transfer rates with adsorbed As(III). Results from this study offer an explanation regarding the experimental observations of Mn(III) accumulation on birnessite and the long residence time of As(III) adsorption complexes on manganite (r-MnOOH) during As(III) oxidation.

Efficient polymer light-emitting diode with air-stable aluminum cathode

NASA Astrophysics Data System (ADS)

Abbaszadeh, D.; Wetzelaer, G. A. H.; Doumon, N. Y.; Blom, P. W. M.

2016-03-01

The fast degradation of polymer light-emitting diodes (PLEDs) in ambient conditions is primarily due to the oxidation of highly reactive metals, such as barium or calcium, which are used as cathode materials. Here, we report the fabrication of PLEDs using an air-stable partially oxidized aluminum (AlOx) cathode. Usually, the high work function of aluminum (4.2 eV) imposes a high barrier for injecting electrons into the lowest unoccupied molecular orbital (LUMO) of the emissive polymer (2.9 eV below the vacuum level). By partially oxidizing aluminum, its work function is decreased, but not sufficiently low for efficient electron injection. Efficient injection is obtained by inserting an electron transport layer of poly[(9,9-di-n-octylfluorenyl-2,7-diyl)-alt-(benzo[2,1,3]thiadiazol-4,8-diyl)] (F8BT), which has its LUMO at 3.3 eV below vacuum, between the AlOx cathode and the emissive polymer. The intermediate F8BT layer not only serves as a hole-blocking layer but also provides an energetic staircase for electron injection from AlOx into the emissive layer. PLEDs with an AlOx cathode and F8BT interlayer exhibit a doubling of the efficiency as compared to conventional Ba/Al PLEDs, and still operate even after being kept in ambient atmosphere for one month without encapsulation.

Sodiation kinetics of metal oxide conversion electrodes: A comparative study with lithiation

DOE PAGES

He, Kai; Lin, Feng; Zhu, Yizhou; ...

2015-08-19

The development of sodium ion batteries (NIBs) can provide an alternative to lithium ion batteries (LIBs) for sustainable, low-cost energy storage. However, due to the larger size and higher m/e ratio of the sodium ion compared to lithium, sodiation reactions of candidate electrodes are expected to differ in significant ways from the corresponding lithium ones. In this work, we investigated the sodiation mechanism of a typical transition metal-oxide, NiO, through a set of correlated techniques, including electrochemical and synchrotron studies, real-time electron microscopy observation, and ab initio molecular dynamics (MD) simulations. We found that a crystalline Na₂O reaction layer thatmore » was formed at the beginning of sodiation plays an important role in blocking the further transport of sodium ions. In addition, sodiation in NiO exhibits a “shrinking-core” mode that results from a layer-by-layer reaction, as identified by ab initio MD simulations. For lithiation, however, the formation of Li anti-site defects significantly distorts the local NiO lattice that facilitates Li insertion, thus enhancing the overall reaction rate. These observations delineate the mechanistic difference between sodiation and lithiation in metal-oxide conversion materials. More importantly, our findings identify the importance of understanding the role of reaction layers on the functioning of electrodes and thus provide critical insights into further optimizing NIB materials through surface engineering.« less

Neutronic reactor

DOEpatents

Lewis, Warren R.

1978-05-30

A graphite-moderated, water-cooled nuclear reactor including a plurality of rectangular graphite blocks stacked in abutting relationship in layers, alternate layers having axes which are normal to one another, alternate rows of blocks in alternate layers being provided with a channel extending through the blocks, said channeled blocks being provided with concave sides and having smaller vertical dimensions than adjacent blocks in the same layer, there being nuclear fuel in the channels.

Chemically modified electrodes by nucleophilic substitution of chlorosilylated platinum oxide surfaces

NASA Astrophysics Data System (ADS)

Chen, Chun-Hsien; Hutchison, James H.; Postlethwaite, Timothy A.; Richardson, John N.; Murray, R. W.

1994-07-01

Chlorosilylated platinum oxide electrode surfaces can be generated by reaction of SiCl4 vapor with an electrochemically prepared monolayer of platinum oxide. A variety of nucleophilic agents (such as alcohols, amines, thiols, and Grignard reagents) can be used to displace chloride and thereby functionalize the metal surface. Electroactive surfaces prepared with ferrocene methanol as the nucleophile show that derivatization by small molecules can achieve coverages on the order of a full monolayer. Surfaces modified with long-chain alkyl groups efficiently block electrode reactions of redox probes dissolved in the contacting solution, but other electrochemical (double layer capacitance and surface coverage) and contact angle measurements suggest that these molecule films are not highly ordered, self-assembled monolayers.

High-throughput preparation of complex multi-scale patterns from block copolymer/homopolymer blend films

NASA Astrophysics Data System (ADS)

Park, Hyungmin; Kim, Jae-Up; Park, Soojin

2012-02-01

A simple, straightforward process for fabricating multi-scale micro- and nanostructured patterns from polystyrene-block-poly(2-vinylpyridine) (PS-b-P2VP)/poly(methyl methacrylate) (PMMA) homopolymer in a preferential solvent for PS and PMMA is demonstrated. When the PS-b-P2VP/PMMA blend films were spin-coated onto a silicon wafer, PS-b-P2VP micellar arrays consisting of a PS corona and a P2VP core were formed, while the PMMA macrodomains were isolated, due to the macrophase separation caused by the incompatibility between block copolymer micelles and PMMA homopolymer during the spin-coating process. With an increase of PMMA composition, the size of PMMA macrodomains increased. Moreover, the P2VP blocks have a strong interaction with a native oxide of the surface of the silicon wafer, so that the P2VP wetting layer was first formed during spin-coating, and PS nanoclusters were observed on the PMMA macrodomains beneath. Whereas when a silicon surface was modified with a PS brush layer, the PS nanoclusters underlying PMMA domains were not formed. The multi-scale patterns prepared from copolymer micelle/homopolymer blend films are used as templates for the fabrication of gold nanoparticle arrays by incorporating the gold precursor into the P2VP chains. The combination of nanostructures prepared from block copolymer micellar arrays and macrostructures induced by incompatibility between the copolymer and the homopolymer leads to the formation of complex, multi-scale surface patterns by a simple casting process.A simple, straightforward process for fabricating multi-scale micro- and nanostructured patterns from polystyrene-block-poly(2-vinylpyridine) (PS-b-P2VP)/poly(methyl methacrylate) (PMMA) homopolymer in a preferential solvent for PS and PMMA is demonstrated. When the PS-b-P2VP/PMMA blend films were spin-coated onto a silicon wafer, PS-b-P2VP micellar arrays consisting of a PS corona and a P2VP core were formed, while the PMMA macrodomains were isolated, due to the macrophase separation caused by the incompatibility between block copolymer micelles and PMMA homopolymer during the spin-coating process. With an increase of PMMA composition, the size of PMMA macrodomains increased. Moreover, the P2VP blocks have a strong interaction with a native oxide of the surface of the silicon wafer, so that the P2VP wetting layer was first formed during spin-coating, and PS nanoclusters were observed on the PMMA macrodomains beneath. Whereas when a silicon surface was modified with a PS brush layer, the PS nanoclusters underlying PMMA domains were not formed. The multi-scale patterns prepared from copolymer micelle/homopolymer blend films are used as templates for the fabrication of gold nanoparticle arrays by incorporating the gold precursor into the P2VP chains. The combination of nanostructures prepared from block copolymer micellar arrays and macrostructures induced by incompatibility between the copolymer and the homopolymer leads to the formation of complex, multi-scale surface patterns by a simple casting process. Electronic supplementary information (ESI) available: AFM images of PS-b-P2VP/PMMA blend films and cross-sectional line scans. See DOI: 10.1039/c2nr11792d

Investigation of 3C-SiC/SiO2 interfacial point defects from ab initio g-tensor calculations and electron paramagnetic resonance measurements

NASA Astrophysics Data System (ADS)

Nugraha, T. A.; Rohrmueller, M.; Gerstmann, U.; Greulich-Weber, S.; Stellhorn, A.; Cantin, J. L.; von Bardeleben, J.; Schmidt, W. G.; Wippermann, S.

SiC is widely used in high-power, high-frequency electronic devices. Recently, it has also been employed as a building block in nanocomposites used as light absorbers in solar energy conversion devices. Analogous to Si, SiC features SiO2 as native oxide that can be used for passivation and insulating layers. However, a significant number of defect states are reported to form at SiC/SiO2 interfaces, limiting mobility and increasing recombination of free charge carriers. We investigated the growth of oxide on different 3C-SiC surfaces from first principles. Carbon antisite Csi defects are found to be strongly stabilized in particular at the interface, because carbon changes its hybridization from sp3 in the SiC-bulk to sp2 at the interface, creating a dangling bond inside a porous region of the SiO2 passivating layer. Combining ab initio g-tensor calculations and electron paramagnetic resonance (EPR) measurements, we show that Csi defects explain the measured EPR signatures, while the hyperfine structure allows to obtain local structural information of the oxide layer. Financial support from BMBF NanoMatFutur Grant 13N12972 and DFG priority program SPP-1601 is gratefully acknowledged.

Pore-Size-Tuned Graphene Oxide Frameworks as Ion-Selective and Protective Layers on Hydrocarbon Membranes for Vanadium Redox-Flow Batteries.

PubMed

Kim, Soohyun; Choi, Junghoon; Choi, Chanyong; Heo, Jiyun; Kim, Dae Woo; Lee, Jang Yong; Hong, Young Taik; Jung, Hee-Tae; Kim, Hee-Tak

2018-05-07

The laminated structure of graphene oxide (GO) membranes provides exceptional ion-separation properties due to the regular interlayer spacing ( d) between laminate layers. However, a larger effective pore size of the laminate immersed in water (∼11.1 Å) than the hydrated diameter of vanadium ions (>6.0 Å) prevents its use in vanadium redox-flow batteries (VRFB). In this work, we report an ion-selective graphene oxide framework (GOF) with a d tuned by cross-linking the GO nanosheets. Its effective pore size (∼5.9 Å) excludes vanadium ions by size but allows proton conduction. The GOF membrane is employed as a protective layer to address the poor chemical stability of sulfonated poly(arylene ether sulfone) (SPAES) membranes against VO 2 + in VRFB. By effectively blocking vanadium ions, the GOF/SPAES membrane exhibits vanadium-ion permeability 4.2 times lower and a durability 5 times longer than that of the pristine SPAES membrane. Moreover, the VRFB with the GOF/SPAES membrane achieves an energy efficiency of 89% at 80 mA cm -2 and a capacity retention of 88% even after 400 cycles, far exceeding results for Nafion 115 and demonstrating its practical applicability for VRFB.

Cooperative tin oxide fullerene electron selective layers for high-performance planar perovskite solar cells

DOE PAGES

Ke, Weijun; Zhao, Dewei; Xiao, Chuanxiao; ...

2016-08-17

Both tin oxide (SnO 2) and fullerenes have been reported as electron selective layers (ESLs) for producing efficient lead halide perovskite solar cells. Here, we report that SnO 2 and fullerenes can work cooperatively to further boost the performance of perovskite solar cells. We find that fullerenes can be redissolved during perovskite deposition, allowing ultra-thin fullerenes to be retained at the interface and some dissolved fullerenes infiltrate into perovskite grain boundaries. The SnO 2 layer blocks holes effectively; whereas, the fullerenes promote electron transfer and passivate both the SnO 2/perovskite interface and perovskite grain boundaries. With careful device optimization, themore » best-performing planar perovskite solar cell using a fullerene passivated SnO 2 ESL has achieved a steady-state efficiency of 17.75% and a power conversion efficiency of 19.12% with an open circuit voltage of 1.12 V, a short-circuit current density of 22.61 mA cm -2, and a fill factor of 75.8% when measured under reverse voltage scanning. In conclusion, we find that the partial dissolving of fullerenes during perovskite deposition is the key for fabricating high-performance perovskite solar cells based on metal oxide/fullerene ESLs.« less

Solvothermal synthesis of gallium-indium-zinc-oxide nanoparticles for electrolyte-gated transistors.

PubMed

Santos, Lídia; Nunes, Daniela; Calmeiro, Tomás; Branquinho, Rita; Salgueiro, Daniela; Barquinha, Pedro; Pereira, Luís; Martins, Rodrigo; Fortunato, Elvira

2015-01-14

Solution-processed field-effect transistors are strategic building blocks when considering low-cost sustainable flexible electronics. Nevertheless, some challenges (e.g., processing temperature, reliability, reproducibility in large areas, and cost effectiveness) are requirements that must be surpassed in order to achieve high-performance transistors. The present work reports electrolyte-gated transistors using as channel layer gallium-indium-zinc-oxide nanoparticles produced by solvothermal synthesis combined with a solid-state electrolyte based on aqueous dispersions of vinyl acetate stabilized with cellulose derivatives, acrylic acid ester in styrene and lithium perchlorate. The devices fabricated using this approach display a ION/IOFF up to 1 × 10(6), threshold voltage (VTh) of 0.3-1.9 V, and mobility up to 1 cm(2)/(V s), as a function of gallium-indium-zinc-oxide ink formulation and two different annealing temperatures. These results validates the usage of electrolyte-gated transistors as a viable and promising alternative for nanoparticle based semiconductor devices as the electrolyte improves the interface and promotes a more efficient step coverage of the channel layer, reducing the operating voltage when compared with conventional dielectrics gating. Moreover, it is shown that by controlling the applied gate potential, the operation mechanism of the electrolyte-gated transistors can be modified from electric double layer to electrochemical doping.

Aminosilanization nanoadhesive layer for nanoelectric circuits with porous ultralow dielectric film.

PubMed

Zhao, Zhongkai; He, Yongyong; Yang, Haifang; Qu, Xinping; Lu, Xinchun; Luo, Jianbin

2013-07-10

An ultrathin layer is investigated for its potential application of replacing conventional diffusion barriers and promoting interface adhesion for nanoelectric circuits with porous ultralow dielectrics. The porous ultralow dielectric (k ≈ 2.5) substrate is silanized by 3-aminopropyltrimethoxysilane (APTMS) to form the nanoadhesive layer by performing oxygen plasma modification and tailoring the silanization conditions appropriately. The high primary amine content is obtained in favor of strong interaction between amino groups and copper. And the results of leakage current measurements of metal-oxide-semiconductor capacitor structure demonstrate that the aminosilanization nanoadhesive layer can block copper diffusion effectively and guarantee the performance of devices. Furthermore, the results of four-point bending tests indicate that the nanoadhesive layer with monolayer structure can provide the satisfactory interface toughness up to 6.7 ± 0.5 J/m(2) for Cu/ultralow-k interface. Additionally, an annealing-enhanced interface toughness effect occurs because of the formation of Cu-N bonding and siloxane bridges below 500 °C. However, the interface is weakened on account of the oxidization of amines and copper as well as the breaking of Cu-N bonding above 500 °C. It is also found that APTMS nanoadhesive layer with multilayer structure provides relatively low interface toughness compared with monolayer structure, which is mainly correlated to the breaking of interlayer hydrogen bonding.

Patterning by area selective oxidation

DOEpatents

Nam, Chang-Yong; Kamcev, Jovan; Black, Charles T.; Grubbs, Robert

2015-12-29

Technologies are described for methods for producing a pattern of a material on a substrate. The methods may comprise receiving a patterned block copolymer on a substrate. The patterned block copolymer may include a first polymer block domain and a second polymer block domain. The method may comprise exposing the patterned block copolymer to a light effective to oxidize the first polymer block domain in the patterned block copolymer. The method may comprise applying a precursor to the block copolymer. The precursor may infuse into the oxidized first polymer block domain and generate the material. The method may comprise applying a removal agent to the block copolymer. The removal agent may be effective to remove the first polymer block domain and the second polymer block domain from the substrate, and may not be effective to remove the material in the oxidized first polymer block domain.

It Takes Two to Tango-Double-Layer Selective Contacts in Perovskite Solar Cells for Improved Device Performance and Reduced Hysteresis.

PubMed

Kegelmann, Lukas; Wolff, Christian M; Awino, Celline; Lang, Felix; Unger, Eva L; Korte, Lars; Dittrich, Thomas; Neher, Dieter; Rech, Bernd; Albrecht, Steve

2017-05-24

Solar cells made from inorganic-organic perovskites have gradually approached market requirements as their efficiency and stability have improved tremendously in recent years. Planar low-temperature processed perovskite solar cells are advantageous for possible large-scale production but are more prone to exhibiting photocurrent hysteresis, especially in the regular n-i-p structure. Here, a systematic characterization of different electron selective contacts with a variety of chemical and electrical properties in planar n-i-p devices processed below 180 °C is presented. The inorganic metal oxides TiO 2 and SnO 2 , the organic fullerene derivatives C 60 , PCBM, and ICMA, as well as double-layers with a metal oxide/PCBM structure are used as electron transport materials (ETMs). Perovskite layers deposited atop the different ETMs with the herein applied fabrication method show a similar morphology according to scanning electron microscopy. Further, surface photovoltage spectroscopy measurements indicate comparable perovskite absorber qualities on all ETMs, except TiO 2 , which shows a more prominent influence of defect states. Transient photoluminescence studies together with current-voltage scans over a broad range of scan speeds reveal faster charge extraction, less pronounced hysteresis effects, and higher efficiencies for devices with fullerene compared to those with metal oxide ETMs. Beyond this, only double-layer ETM structures substantially diminish hysteresis effects for all performed scan speeds and strongly enhance the power conversion efficiency up to a champion stabilized value of 18.0%. The results indicate reduced recombination losses for a double-layer TiO 2 /PCBM contact design: First, a reduction of shunt paths through the fullerene to the ITO layer. Second, an improved hole blocking by the wide band gap metal oxide. Third, decreased transport losses due to an energetically more favorable contact, as implied by photoelectron spectroscopy measurements. The herein demonstrated improvements of multilayer selective contacts may serve as a general design guideline for perovskite solar cells.

Photo-assisted generation of phospholipid polymer substrates for regiospecific protein conjugation and control of cell adhesion.

PubMed

Tanaka, Masako; Iwasaki, Yasuhiko

2016-08-01

Novel photo-reactive phospholipid polymers were synthesized for use in the preparation of nonfouling surfaces with protein conjugation capacity. Poly[2-methacryloyloxyethyl phosphorylcholine (MPC)-ran-N-methacryloyl-(l)-tyrosinemethylester (MAT)] (P(MPC/MAT)) was synthesized by conventional radical polymerization, with the MAT units capable of being oxidized by 254nm UV irradiation. Because of this photo-oxidation, active species such as catechol and quinone were alternately generated in the copolymer. A silicon wafer was subjected to surface modification through spin coating of P(MPC/MAT) from an aqueous solution for use as a model substrate. The surface was then irradiated several times with UV light. The thickness of the polymer layers formed on the Si wafers was influenced by various parameters such as polymer concentration, UV irradiation time, and composition of the MAT units in P(MPC/MAT). Oxidized MAT units were advantageous not only for polymer adhesion to a solid surface but also for protein conjugation with the adhered polymers. The amount of protein immobilized on UV-irradiated P(MPC/MAT) was dependent on the composition of the MAT units in the polymer. Furthermore, it was confirmed that protein immobilization on the polymer occurred through the oxidized MAT units because the protein adsorption was significantly reduced upon blocking these units through pretreatment with glycine. Conjugation of regiospecific protein could also be achieved through the use of a photomask. In addition, nonspecific protein adsorption was reduced on the non-irradiated regions whose surface was covered with physisorbed P(MPC/MAT). Therefore, P(MPC/MAT) can be used in the preparation of nonfouling substrates, which enable micrometer-sized manipulation of proteins through photo-irradiation. Function of proteins immobilized on MPC copolymers was also confirmed by cell adhesion test. As such, photo-reactive MPC copolymers are suitable for performing controlled protein conjugation and preparing polymer-protein hybrid platforms for use in biomedical and diagnostic devices. Novel photo-reactive phospholipid polymers have been synthesized for immobilization on solid surfaces and regiospecific protein conjugation. Tyrosine residues embedded in 2-methacryloyloxyethyl phosphorylcholine (MPC) copolymers could be photo-oxidized, resulting in polymers able to form layers on a solid surface and conjugate with proteins. Moreover, nonspecific biofouling on the surface significantly reduced when the oxidized tyrosine units in the polymer layers were blocked. Upon UV irradiation through a photomask, the UV-exposed tyrosine units were selectively oxidized, forming the only specific regions in which protein conjugation could occur. Copyright © 2016 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

Organic photosensitive optoelectronic device having a phenanthroline exciton blocking layer

DOEpatents

Thompson, Mark E [Anaheim Hills, CA; Li, Jian [Los Angeles, CA; Forrest, Stephen [Princeton, NJ; Rand, Barry [Princeton, NJ

2011-02-22

An organic photosensitive optoelectronic device, having an anode, a cathode, and an organic blocking layer between the anode and the cathode is described, wherein the blocking layer comprises a phenanthroline derivative, and at least partially blocks at least one of excitons, electrons, and holes.

The Structure and Properties of Plasma Sprayed Iron Oxide Doped Manganese Cobalt Oxide Spinel Coatings for SOFC Metallic Interconnectors

NASA Astrophysics Data System (ADS)

Puranen, Jouni; Lagerbom, Juha; Hyvärinen, Leo; Kylmälahti, Mikko; Himanen, Olli; Pihlatie, Mikko; Kiviaho, Jari; Vuoristo, Petri

2011-01-01

Manganese cobalt oxide spinel doped with Fe2O3 was studied as a protective coating on ferritic stainless steel interconnects. Chromium alloying causes problems at high operation temperatures in such oxidizing conditions where chromium compounds evaporate and poison the cathode active area, causing the degradation of the solid oxide fuel cell. In order to prevent chromium evaporation, these interconnectors need a protective coating to block the chromium evaporation and to maintain an adequate electrical conductivity. Thermal spraying is regarded as a promising way to produce dense and protective layers. In the present work, the ceramic Mn-Co-Fe oxide spinel coatings were produced by using the atmospheric plasma spray process. Coatings with low thickness and low amount of porosity were produced by optimizing deposition conditions. The original spinel structure decomposed because of the fast transformation of solid-liquid-solid states but was partially restored by using post-annealing treatment.

Mussel-inspired nano-building block assemblies for mimicking extracellular matrix microenvironments with multiple functions.

PubMed

Wang, Zhenming; Jia, Zhanrong; Jiang, Yanan; Li, Pengfei; Han, Lu; Lu, Xiong; Ren, Fuzeng; Wang, Kefeng; Yuan, Huiping

2017-08-03

The assembly of nano-building blocks is an effective way to produce artificial extracellular matrix microenvironments with hierarchical micro/nano structures. However, it is hard to assemble different types of nano-building blocks, to form composite coatings with multiple functions, by traditional layer-by-layer (LbL) self-assembly methods. Inspired by the mussel adhesion mechanism, we developed polydopamine (PDA)-decorated bovine serum albumin microspheres (BSA-MS) and nano-hydroxyapatite (nano-HA), and assembled them to form bioactive coatings with micro/nano structures encapsulating bone morphogenetic protein-2 (BMP-2). First, PDA-decorated nano-HA (nano-pHA) was obtained by oxidative polymerization of dopamine on nano-HA. Second, BMP-2-encapsulated BSA microspheres were prepared through desolvation, and then were also decorated by PDA (pBSA-MS). Finally, the nano-pHA and pBSA-MS were assembled using the adhesive properties of PDA. Bone marrow stromal cell cultures and in vivo implantation, showed that the pHA/pBSA (BMP-2) coatings can promote cell adhesion, proliferation, and benefited for osteoinductivity. PDA decoration was also applied to assemble various functional nanoparticles, such as nano-HA, polystyrene, and Fe 3 O 4 nanoparticles. In summary, this study provides a novel strategy for the assembly of biofunctional nano-building blocks, which surpasses traditional LbL self-assembly of polyelectrolytes, and can find broad applications in bioactive agents delivery or multi-functional coatings.

Effect of Organic Blocking Layer on the Energy Storage Characteristics of High-Permittivity Sol-Gel Thin Film Based on Neat 2-Cyanoethyltrimethoxysilane

NASA Astrophysics Data System (ADS)

Kim, Yunsang; Kathaperumal, Mohanalingam; Pan, Ming-Jen; Perry, Joseph

2014-03-01

Organic-inorganic hybrid sol-gel materials with polar groups that can undergo reorientational polarization provide a potential route to dielectric materials for energy storage. We have investigated the influence of nanoscale polymeric layer on dielectric and energy storage properties of 2-cyanoethyltrimethoxysilane (CNETMS) films. Two polymeric materials, fluoropolymer (CYTOP) and poly(p-phenylene oxide, PPO), are examined as potential materials to control charge injection from electrical contacts into CNETMS films by means of a potential barrier, whose width and height are defined by thickness and permittivity. Blocking layers ranging from 20 nm to 200 nm were deposited on CNETMS films by spin casting and subjected to thermal treatment. Polarization-electric field measurements show 30% increase in extractable energy density with PPO/CNETMS bilayers, relative to CNETMS alone, due to improved breakdown strength. Conduction current of the bilayers indicate that onset of charge conduction at high field is much delayed, which can be translated into effective suppression of charge injection and probability of breakdown events. The results will be discussed in regards to film morphology, field partitioning, width and height of potential barrier, charge trapping and loss of bilayers.

Efficient polymer light-emitting diode with air-stable aluminum cathode

DOE Office of Scientific and Technical Information (OSTI.GOV)

Abbaszadeh, D.; Dutch Polymer Institute, P.O. Box 902, 5600 AX Eindhoven; Wetzelaer, G. A. H.

2016-03-07

The fast degradation of polymer light-emitting diodes (PLEDs) in ambient conditions is primarily due to the oxidation of highly reactive metals, such as barium or calcium, which are used as cathode materials. Here, we report the fabrication of PLEDs using an air-stable partially oxidized aluminum (AlO{sub x}) cathode. Usually, the high work function of aluminum (4.2 eV) imposes a high barrier for injecting electrons into the lowest unoccupied molecular orbital (LUMO) of the emissive polymer (2.9 eV below the vacuum level). By partially oxidizing aluminum, its work function is decreased, but not sufficiently low for efficient electron injection. Efficient injection is obtainedmore » by inserting an electron transport layer of poly[(9,9-di-n-octylfluorenyl-2,7-diyl)-alt-(benzo[2,1,3] thiadiazol-4,8-diyl)] (F8BT), which has its LUMO at 3.3 eV below vacuum, between the AlO{sub x} cathode and the emissive polymer. The intermediate F8BT layer not only serves as a hole-blocking layer but also provides an energetic staircase for electron injection from AlO{sub x} into the emissive layer. PLEDs with an AlO{sub x} cathode and F8BT interlayer exhibit a doubling of the efficiency as compared to conventional Ba/Al PLEDs, and still operate even after being kept in ambient atmosphere for one month without encapsulation.« less

NEUTRONIC REACTOR

DOEpatents

Fermi, E.

1960-04-01

A nuclear reactor is described consisting of blocks of graphite arranged in layers, natural uranium bodies disposed in holes in alternate layers of graphite blocks, and coolant tubes disposed in the layers of graphite blocks which do not contain uranium.

Adsorption of Poly(ethylene oxide)-Poly(lactide) Copolymers. Effects of Composition and Degradation.

PubMed

Muller, Dries; Carlsson, Fredrik; Malmsten, Martin

2001-04-01

The effect of chemical degradation of two diblock copolymers of poly(ethylene oxide) (E) and poly(lactide) (L), E(39)L(5) and E(39)L(20), on their adsorption at silica and methylated silica was investigated with in situ ellipsometry. Steric stablization of polystyrene dispersions was investigated in relation to degradation. Hydrolysis of the poly(lactide) block of the copolymers was followed at different temperatures and pH by using HPLC to measure the occurrence of lactic acid in solution. The block copolymers were quite stable in pH-unadjusted solution at low temperature, whereas degradation was facilitated by increasing temperature or lowering of the pH. Lower degradation rates of E(39)L(20) where observed at low temperature in comparison with those of E(39)L(5), whereas the degradation rates of the copolymers were quantitatively similar at high temperature. The adsorption of the copolymers at methylated silica substrates decreased with increasing degree of degradation due to the reduction in the ability of hydrophobic block to anchor the copolymer layer at the surface. At silica the adsorption initially increased with increasing degradation, particularly for E(39)L(20) due to deposition of aggregates onto the surface. After extensive degradation the adsorption of the copolymers at both silica and methylated silica resembled that of the corresponding poly(ethylene oxide) homopolymer. Overall, it was found that the eventual reduction in adsorption occurred at a lower degree of degradation for E(39)L(5) than for E(39)L(20). Mean-field calculations showed a reduced anchoring for the block copolymers with decreasing poly(lactide) block length at hydrophobic surfaces. In accordance with this finding, it was observed that polystyrene dispersions were stabilized by E(39)L(20) or E(39)L(5) in a way that depended on both the lactide block length and the degree of degradation. Upon degradation of the hydrophobic block, stabilization of the polystyrene dispersions was maintained initially, but eventually degradation resulted in destabilization. The average residual copolymer concentration required for stabilization of the polystyrene dispersions was much higher than the corresponding concentration of intact copolymer required for stabilization. Copyright 2001 Academic Press.

Complex capacitance spectroscopy as a probe for oxidation process of AlO{sub x}-based magnetic tunnel junctions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Huang, J.C.A.; Hsu, C.Y.; Taiwan SPIN Research Center, National Chung Cheng University, Chiayi, Taiwan

2004-12-13

Proper as well as under- and over-oxided CoFe-AlO{sub x}-CoFe magnetic tunnel junctions (MTJs) have been systematically investigated in a frequency range from 10{sup 2} to 10{sup 8} Hz by complex capacitance spectroscopy. The dielectric relaxation behavior of the MTJs remarkably disobeys the typical Cole-Cole arc law probably due to the existence of imperfectly blocked Schottky barrier in the metal-insulator interface. The dielectric relaxation response can be successfully modeled on the basis of Debye relaxation by incorporating an interfacial dielectric contribution. In addition, complex capacitance spectroscopy demonstrates significant sensitivity to the oxidation process of metallic Al layers, i.e., almost a fingerprintmore » of under, proper, and over oxidation. This technique provides a fast and simple method to inspect the AlO{sub x} barrier quality of MTJs.« less

The Magnet Cove Rutile Company mine, Hot Spring County, Arkansas

USGS Publications Warehouse

Kinney, Douglas M.

1949-01-01

The Magnet Cove Rutile Company mine was mapped by the U.S. Geological Survey in November 1944. The pits are on the northern edge of Magnet Cove and have been excavated in the oxidized zone of highly weathered and altered volcanic agglomerate. The agglomerate is composed of altered mafic igneous rocks in a matrix of white to gray clay, a highly altered tuff. The agglomerate appears layered and is composed of tuffaceous clay material below and igneous blocks above. The agglomerate is cut by aplite and lamprophyre dikes. Alkalic syenite dikes crop out on the ridge north of the pits. At the present stage of mine development the rutile seems to be concentrated in a narrow zone beneath the igneous blocks of the agglomerate. Rutile, associated with calcite and pyrite, occurs as disseminated acicular crystals and discontinuous vein-like masses in the altered tuff. Thin veins of rutile locally penetrate the mafic igneous blocks of the agglomerate.

A molybdenum disulfide/carbon nanotube heterogeneous complementary inverter.

PubMed

Huang, Jun; Somu, Sivasubramanian; Busnaina, Ahmed

2012-08-24

We report a simple, bottom-up/top-down approach for integrating drastically different nanoscale building blocks to form a heterogeneous complementary inverter circuit based on layered molybdenum disulfide and carbon nanotube (CNT) bundles. The fabricated CNT/MoS(2) inverter is composed of n-type molybdenum disulfide (MOS(2)) and p-type CNT transistors, with a high voltage gain of 1.3. The CNT channels are fabricated using directed assembly while the layered molybdenum disulfide channels are fabricated by mechanical exfoliation. This bottom-up fabrication approach for integrating various nanoscale elements with unique characteristics provides an alternative cost-effective methodology to complementary metal-oxide-semiconductors, laying the foundation for the realization of high performance logic circuits.

Investigation of depth-of-interaction (DOI) effects in single- and dual-layer block detectors by the use of light sharing in scintillators.

PubMed

Yamamoto, Seiichi

2012-01-01

In block detectors for PET scanners that use different lengths of slits in scintillators to share light among photomultiplier tubes (PMTs), a position histogram is distorted when the depth of interaction (DOI) of the gamma photons is near the PMTs (DOI effect). However, it remains unclear whether a DOI effect is observed for block detectors that use light sharing in scintillators. To investigate the effect, I tested the effect for single- and dual-layer block detectors. In the single-layer block detector, Ce doped Gd₂SiO₅ (GSO) crystals of 1.9 × 1.9 × 15 mm³ (0.5 mol% Ce) were used. In the dual-layer block detector, GSO crystals of a 1.9 × 1.9 × 6 mm³ (1.5 mol% Ce) were used for the front layer and GSO crystals of 1.9 × 1.9 × 9 mm³ (0.5 mol% Ce) for the back layer. These scintillators were arranged to form an 8 × 8 matrix with multi-layer optical film inserted partly between the scintillators for obtaining an optimized position response with use of two dual-PMTs. Position histograms and energy responses were measured for these block detectors at three different DOI positions, and the flood histograms were obtained. The results indicated that DOI effects are observed in both block detectors, but the dual-layer block showed more severe distortion in the position histogram as well as larger energy variations. We conclude that, in the block detectors that use light sharing in the scintillators, the DOI effect is an important factor for the performance of the detectors, especially for DOI block detectors.

First-principles many-body investigation of δ-doped titanates

NASA Astrophysics Data System (ADS)

Lechermann, Frank; Obermeyer, Michael

2015-03-01

Studying oxide heterostructures provides the possibility for exploring novel composite materials beyond nature's original conception. In this respect, the doping of Mott-insulating distorted-perovskite titanates such as LaTiO3 and GdTiO3 with a single SrO layer gives rise to a very rich correlated electronic structure. A realistic superlattice survey by means of the charge self-consistent combination of density functional theory (DFT) with dynamical mean-field theory (DMFT) reveals layer- and temperature-dependent multi-orbital metal-insulator transitions. In [001] stacking, an orbital-selective metallic layer at the interface dissolves via an orbital-polarized doped-Mott state into an orbital-ordered insulating regime beyond the two conducting TiO2 layers. We find large differences in the scattering behavior within the latter. Breaking the spin symmetry in δ-doped GdTiO3 results in blocks of ferromagnetic itinerant and ferromagnetic Mott-insulating layers which are coupled antiferromagnetically. Support from the DFG-FOR1346 is acknowledged.

Fabrication of 4H-SiC n-channel IGBTs with ultra high blocking voltage

NASA Astrophysics Data System (ADS)

Yang, Xiaolei; Tao, Yonghong; Yang, Tongtong; Huang, Runhua; Song, Bai

2018-03-01

Owing to the conductivity modulation of silicon carbide (SiC) bipolar devices, n-channel insulated gate bipolar transistors (n-IGBTs) have a significant advantage over metal oxide semiconductor field effect transistors (MOSFETs) in ultra high voltage (UHV) applications. In this paper, backside grinding and laser annealing process were carried out to fabricate 4H-SiC n-IGBTs. The thickness of a drift layer was 120 μm, which was designed for a blocking voltage of 13 kV. The n-IGBTs carried a collector current density of 24 A/cm2 at a power dissipation of 300 W/cm2 when the gate voltage was 20 V, with a differential specific on-resistance of 140 mΩ·cm2.

Coastal eutrophication thresholds: a matter of sediment microbial processes.

PubMed

Lehtoranta, Jouni; Ekholm, Petri; Pitkänen, Heikki

2009-09-01

In marine sediments, the major anaerobic mineralization processes are Fe(III) oxide reduction and sulfate reduction. In this article, we propose that the two alternative microbial mineralization pathways in sediments exert decisively different impacts on aquatic ecosystems. In systems where iron reduction dominates in the recently deposited sediment layers, the fraction of Fe(III) oxides that is dissolved to Fe(II) upon reduction will ultimately be transported to the oxic layer, where it will be reoxidized. Phosphorus, which is released from Fe(III) oxides and decomposing organic matter from the sediment, will be largely trapped by this newly formed Fe(III) oxide layer. Consequently, there are low concentrations of phosphorus in near-bottom and productive water layers and primary production tends to be limited by phosphorus (State 1). By contrast, in systems where sulfate reduction dominates, Fe(III) oxides are reduced by sulfides. This chemical reduction leads to the formation and permanent burial of iron as solid iron sulfides that are unable to capture phosphorus. In addition, the cycling of iron is blocked, and phosphorus is released to overlying water. Owing to the enrichment of phosphorus in water, the nitrogen : phosphorus ratio is lowered and nitrogen tends to limit algal growth, giving an advantage to nitrogen-fixing blue-green algae (State 2). A major factor causing a shift from State 1 to State 2 is an increase in the flux of labile organic carbon to the bottom sediments; upon accelerating eutrophication a critical point will be reached when the availability of Fe(III) oxides in sediments will be exhausted and sulfate reduction will become dominant. Because the reserves of Fe(III) oxides are replenished only slowly, reversal to State 1 may markedly exceed the time needed to reduce the flux of organic carbon to the sediment. A key factor affecting the sensitivity of a coastal system to such a regime shift is formed by the hydrodynamic alterations that decrease the transport of O2 to the near-bottom water, e.g., due to variations in salinity and temperature stratification.

Mechanical and transport properties of layer-by-layer electrospun composite proton exchange membranes for fuel cell applications.

PubMed

Mannarino, Matthew M; Liu, David S; Hammond, Paula T; Rutledge, Gregory C

2013-08-28

Composite membranes composed of highly conductive and selective layer-by-layer (LbL) films and electrospun fiber mats were fabricated and characterized for mechanical strength and electrochemical selectivity. The LbL component consists of a proton-conducting, methanol-blocking poly(diallyl dimethyl ammonium chloride)/sulfonated poly(2,6-dimethyl-1,4-phenylene oxide) (PDAC/sPPO) thin film. The electrospun fiber component consists of poly(trimethyl hexamethylene terephthalamide) (PA 6(3)T) fibers in a nonwoven mat of 60-90% porosity. The bare mats were annealed to improve their mechanical properties, which improvements are shown to be retained in the composite membranes. Spray LbL assembly was used as a means for the rapid formation of proton-conducting films that fill the void space throughout the porous electrospun matrix and create a fuel-blocking layer. Coated mats as thin as 15 μm were fabricated, and viable composite membranes with methanol permeabilities 20 times lower than Nafion and through-plane proton selectivity five and a half times greater than Nafion are demonstrated. The mechanical properties of the spray coated electrospun mats are shown to be superior to the LbL-only system and possess intrinsically greater dimensional stability and lower mechanical hysteresis than Nafion under hydrated conditions. The composite proton exchange membranes fabricated here were tested in an operational direct methanol fuel cell. The results show the potential for higher open circuit voltages (OCV) and comparable cell resistances when compared to fuel cells based on Nafion.

High-throughput preparation of complex multi-scale patterns from block copolymer/homopolymer blend films.

PubMed

Park, Hyungmin; Kim, Jae-Up; Park, Soojin

2012-02-21

A simple, straightforward process for fabricating multi-scale micro- and nanostructured patterns from polystyrene-block-poly(2-vinylpyridine) (PS-b-P2VP)/poly(methyl methacrylate) (PMMA) homopolymer in a preferential solvent for PS and PMMA is demonstrated. When the PS-b-P2VP/PMMA blend films were spin-coated onto a silicon wafer, PS-b-P2VP micellar arrays consisting of a PS corona and a P2VP core were formed, while the PMMA macrodomains were isolated, due to the macrophase separation caused by the incompatibility between block copolymer micelles and PMMA homopolymer during the spin-coating process. With an increase of PMMA composition, the size of PMMA macrodomains increased. Moreover, the P2VP blocks have a strong interaction with a native oxide of the surface of the silicon wafer, so that the P2VP wetting layer was first formed during spin-coating, and PS nanoclusters were observed on the PMMA macrodomains beneath. Whereas when a silicon surface was modified with a PS brush layer, the PS nanoclusters underlying PMMA domains were not formed. The multi-scale patterns prepared from copolymer micelle/homopolymer blend films are used as templates for the fabrication of gold nanoparticle arrays by incorporating the gold precursor into the P2VP chains. The combination of nanostructures prepared from block copolymer micellar arrays and macrostructures induced by incompatibility between the copolymer and the homopolymer leads to the formation of complex, multi-scale surface patterns by a simple casting process. This journal is © The Royal Society of Chemistry 2012

Required Equipment for Photo-Switchable Donor-Acceptor (D-A) Dyad Interfacial Self-Assembled Monolayers for Organic Photovoltaic Cells

DTIC Science & Technology

2014-01-24

Interfacial Tuning via Electron-Blocking/Hole-Transport Layers and Indium Tin Oxide Surface Treatment in Bulk- Heterojunction Organic Photovoltaic Cells...devices Figure 3 shows the compounds we prepared to assemble on gold (Au) surfaces. Results of TPA-C60 dyads (1 and 2) self-assembled on Au electrodes...surface hydroxyl groups, respectively, we decided to prepare compounds 5-7 to attach as SAMs, see Figure 5. Difficulties and unexpected problems

Effects of oxygen-inserted layers on diffusion of boron, phosphorus, and arsenic in silicon for ultra-shallow junction formation

NASA Astrophysics Data System (ADS)

Zhang, X.; Connelly, D.; Takeuchi, H.; Hytha, M.; Mears, R. J.; Rubin, L. M.; Liu, T.-J. K.

2018-03-01

The effects of oxygen-inserted (OI) layers on the diffusion of boron (B), phosphorus (P), and arsenic (As) in silicon (Si) are investigated, for ultra-shallow junction formation by high-dose ion implantation followed by rapid thermal annealing. The projected range (Rp) of the implanted dopants is shallower than the depth of the OI layers. Secondary ion mass spectrometry is used to compare the dopant profiles in silicon samples that have OI layers against the dopant profiles in control samples that do not have OI layers. Diffusion is found to be substantially retarded by the OI layers for B and P, and less for As, providing shallower junction depth. The experimental results suggest that the OI layers serve to block the diffusion of Si self-interstitials and thereby effectively reduce interstitial-aided diffusion beyond the depth of the OI layers. The OI layers also help to retain more dopants within the Si, which technology computer-aided design simulations indicate to be beneficial for achieving shallower junctions with lower sheet resistance to enable further miniaturization of planar metal-oxide-semiconductor field-effect transistors for improved integrated-circuit performance and cost per function.

Effective passivation of silicon surfaces by ultrathin atomic-layer deposited niobium oxide

NASA Astrophysics Data System (ADS)

Macco, B.; Bivour, M.; Deijkers, J. H.; Basuvalingam, S. B.; Black, L. E.; Melskens, J.; van de Loo, B. W. H.; Berghuis, W. J. H.; Hermle, M.; Kessels, W. M. M. Erwin

2018-06-01

This letter reports on effective surface passivation of n-type crystalline silicon by ultrathin niobium oxide (Nb2O5) films prepared by atomic layer deposition (ALD) and subjected to a forming gas anneal at 300 °C. A champion recombination parameter J0 of 20 fA/cm2 and a surface recombination velocity Seff of 4.8 cm/s have been achieved for ultrathin films of 1 nm. The surface pretreatment was found to have a strong impact on the passivation. Good passivation can be achieved on both HF-treated c-Si surfaces and c-Si surfaces with a wet-chemically grown interfacial silicon oxide layer. On HF-treated surfaces, a minimum film thickness of 3 nm is required to achieve a high level of surface passivation, whereas the use of a wet chemically-grown interfacial oxide enables excellent passivation even for Nb2O5 films of only 1 nm. This discrepancy in passivation between both surface types is attributed to differences in the formation and stoichiometry of interfacial silicon oxide, resulting in different levels of chemical passivation. On both surface types, the high level of passivation of ALD Nb2O5 is aided by field-effect passivation originating from a high fixed negative charge density of 1-2 × 1012 cm-3. Furthermore, it is demonstrated that the passivation level provided by 1 nm of Nb2O5 can be further enhanced through light-soaking. Finally, initial explorations show that a low contact resistivity can be obtained using Nb2O5-based contacts. Together, these properties make ALD Nb2O5 a highly interesting building block for high-efficiency c-Si solar cells.

High rate buffer layer for IBAD MgO coated conductors

DOEpatents

Foltyn, Stephen R [Los Alamos, NM; Jia, Quanxi [Los Alamos, NM; Arendt, Paul N [Los Alamos, NM

2007-08-21

Articles are provided including a base substrate having a layer of an oriented material thereon, and, a layer of hafnium oxide upon the layer of an oriented material. The layer of hafnium oxide can further include a secondary oxide such as cerium oxide, yttrium oxide, lanthanum oxide, scandium oxide, calcium oxide and magnesium oxide. Such articles can further include thin films of high temperature superconductive oxides such as YBCO upon the layer of hafnium oxide or layer of hafnium oxide and secondary oxide.

Method for generating small and ultra small apertures, slits, nozzles and orifices

DOEpatents

Khounsary, Ali M [Hinsdale, IL

2012-05-22

A method and device for one or more small apertures, slits, nozzles and orifices, preferably having a high aspect ratio. In one embodiment, one or more alternating layers of sacrificial layers and blocking layers are deposited onto a substrate. Each sacrificial layer is made of a material which preferably allows a radiation to substantially pass through. Each blocking layer is made of a material which substantially blocks the radiation.

Al2O3 Passivation Effect in HfO2·Al2O3 Laminate Structures Grown on InP Substrates.

PubMed

Kang, Hang-Kyu; Kang, Yu-Seon; Kim, Dae-Kyoung; Baik, Min; Song, Jin-Dong; An, Youngseo; Kim, Hyoungsub; Cho, Mann-Ho

2017-05-24

The passivation effect of an Al 2 O 3 layer on the electrical properties was investigated in HfO 2 -Al 2 O 3 laminate structures grown on indium phosphide (InP) substrate by atomic-layer deposition. The chemical state obtained using high-resolution X-ray photoelectron spectroscopy showed that interfacial reactions were dependent on the presence of the Al 2 O 3 passivation layer and its sequence in the HfO 2 -Al 2 O 3 laminate structures. Because of the interfacial reaction, the Al 2 O 3 /HfO 2 /Al 2 O 3 structure showed the best electrical characteristics. The top Al 2 O 3 layer suppressed the interdiffusion of oxidizing species into the HfO 2 films, whereas the bottom Al 2 O 3 layer blocked the outdiffusion of In and P atoms. As a result, the formation of In-O bonds was more effectively suppressed in the Al 2 O 3 /HfO 2 /Al 2 O 3 /InP structure than that in the HfO 2 -on-InP system. Moreover, conductance data revealed that the Al 2 O 3 layer on InP reduces the midgap traps to 2.6 × 10 12 eV -1 cm -2 (compared to that of HfO 2 /InP, that is, 5.4 × 10 12 eV -1 cm -2 ). The suppression of gap states caused by the outdiffusion of In atoms significantly controls the degradation of capacitors caused by leakage current through the stacked oxide layers.

Actinide oxide photodiode and nuclear battery

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sykora, Milan; Usov, Igor

Photodiodes and nuclear batteries may utilize actinide oxides, such a uranium oxide. An actinide oxide photodiode may include a first actinide oxide layer and a second actinide oxide layer deposited on the first actinide oxide layer. The first actinide oxide layer may be n-doped or p-doped. The second actinide oxide layer may be p-doped when the first actinide oxide layer is n-doped, and the second actinide oxide layer may be n-doped when the first actinide oxide layer is p-doped. The first actinide oxide layer and the second actinide oxide layer may form a p/n junction therebetween. Photodiodes including actinide oxidesmore » are better light absorbers, can be used in thinner films, and are more thermally stable than silicon, germanium, and gallium arsenide.« less

Pile construction

DOEpatents

Johnson, Alfred A.; Carleton, John T.

1978-05-02

A graphite-moderated, water-cooled nuclear reactor including graphite blocks disposed in transverse alternate layers, one set of alternate layers consisting of alternate full size blocks and smaller blocks through which cooling tubes containing fuel extend, said smaller blocks consisting alternately of tube bearing blocks and support block, the support blocks being smaller than the tube bearing blocks, the aperture of each support block being tapered so as to provide the tube extending therethrough with a narrow region of support while being elsewhere spaced therefrom.

Effect of ring-shaped SiO2 current blocking layer thickness on the external quantum efficiency of high power light-emitting diodes

NASA Astrophysics Data System (ADS)

Zhou, Shengjun; Liu, Mengling; Hu, Hongpo; Gao, Yilin; Liu, Xingtong

2017-12-01

A ring-shaped SiO2 CBL underneath the p-electrode was employed to enhance current spreading of GaN-based light-emitting diodes (LEDs). Effects of ring-shaped SiO2 current blocking layer (CBL) thickness on optical and electrical characteristics of high power LEDs were investigated. A 190-nm-thick ring-shaped SiO2 CBL with inclined sidewalls was obtained using a combination of a thermally reflowed photoresist technique and an inductively coupled plasma (ICP) etching process, allowing for the deposition of conformal indium tin oxide (ITO) transparent conductive layer on sidewalls of ring-shaped SiO2 CBL. It was indicated that the external quantum efficiency (EQE) of high power LEDs increased with increasing thickness of ring-shaped SiO2 CBL. The EQE of high power LED with 190-nm-thick ring-shaped SiO2 CBL was 12.7% higher than that of high power LED without SiO2 CBL. Simulations performed with commercial SimuLED software package showed that the ring-shaped SiO2 CBL could significantly alleviate current crowding around p-electrode, resulting in enhanced current spreading over the entire high power LED structure.

Tessellated gold nanostructures from Au144(SCH2CH2Ph)60 molecular precursors and their use in organic solar cell enhancement

NASA Astrophysics Data System (ADS)

Bauld, Reg; Hesari, Mahdi; Workentin, Mark S.; Fanchini, Giovanni

2014-06-01

We report for the first time the fabrication of nanocomposite hole-blocking layers consisting of poly-3,4-ethylene-dioxythiophene:poly-styrene-sulfonate (PEDOT:PSS) thin films incorporating networks of gold nanoparticles assembled from Au144(SCH2CH2Ph)60, a molecular gold precursor. These thin films can be prepared reproducibly on indium tin oxide by spinning on it Au144(SCH2CH2Ph)60 solutions in chlorobenzene, annealing the resulting thin film at 400 °C, and subsequently spinning PEDOT:PSS on top. The use of our nanocomposite hole-blocking layers for enhancing the photoconversion efficiency of bulk heterojunction organic solar cells is demonstrated. By varying the concentration of Au144(SCH2CH2Ph)60 in the starting solution and the annealing time, different gold nanostructures were obtained ranging from individual gold nanoparticles (AuNPs) to tessellated networks of gold nanostructures (Tess-AuNPs). Improvement in organic solar cell efficiencies up to 10% relative to a reference cell is demonstrated with Tess-AuNPs embedded in PEDOT:PSS.

Thermoelectric properties of FeAs based superconductors, with thick perovskite- and Sm-O fluorite-type blocking layers

NASA Astrophysics Data System (ADS)

Singh, S. J.; Shimoyama, J.; Ogino, H.; Kishio, K.

2015-11-01

The transport properties (electrical resistivity, Hall and Seebeck coefficient, and thermal conductivity) of iron based superconductors with thick perovskite-type oxide blocking layers and fluorine-doped SmFeAsO were studied to explore their possible potential for thermoelectric applications. The thermal conductivity of former compounds depicts the dominated role of phonon and its value decreases rapidly below the Tc, suggesting the addition of scattering of phonons. Both the Seebeck coefficient (S) and Hall coefficient (RH) of all samples were negative in the whole temperature region below 300 K, indicating that the major contribution to the normal state conductivity is by electrons. In addition, the profile of S(T) and RH(T) of all samples have similar behaviours as would be expected for a multi-band superconductors. Although the estimated thermoelectric figure of merit (ZT) of these compounds was much lower than that of practically applicable thermoelectric materials, however its improvement can be expected by optimizing microstructure of the polycrystalline materials, such as densification and grain orientation.

Semi-automatic spray pyrolysis deposition of thin, transparent, titania films as blocking layers for dye-sensitized and perovskite solar cells.

PubMed

Krýsová, Hana; Krýsa, Josef; Kavan, Ladislav

2018-01-01

For proper function of the negative electrode of dye-sensitized and perovskite solar cells, the deposition of a nonporous blocking film is required on the surface of F-doped SnO 2 (FTO) glass substrates. Such a blocking film can minimise undesirable parasitic processes, for example, the back reaction of photoinjected electrons with the oxidized form of the redox mediator or with the hole-transporting medium can be avoided. In the present work, thin, transparent, blocking TiO 2 films are prepared by semi-automatic spray pyrolysis of precursors consisting of titanium diisopropoxide bis(acetylacetonate) as the main component. The variation in the layer thickness of the sprayed films is achieved by varying the number of spray cycles. The parameters investigated in this work were deposition temperature (150, 300 and 450 °C), number of spray cycles (20-200), precursor composition (with/without deliberately added acetylacetone), concentration (0.05 and 0.2 M) and subsequent post-calcination at 500 °C. The photo-electrochemical properties were evaluated in aqueous electrolyte solution under UV irradiation. The blocking properties were tested by cyclic voltammetry with a model redox probe with a simple one-electron-transfer reaction. Semi-automatic spraying resulted in the formation of transparent, homogeneous, TiO 2 films, and the technique allows for easy upscaling to large electrode areas. The deposition temperature of 450 °C was necessary for the fabrication of highly photoactive TiO 2 films. The blocking properties of the as-deposited TiO 2 films (at 450 °C) were impaired by post-calcination at 500 °C, but this problem could be addressed by increasing the number of spray cycles. The modification of the precursor by adding acetylacetone resulted in the fabrication of TiO 2 films exhibiting perfect blocking properties that were not influenced by post-calcination. These results will surely find use in the fabrication of large-scale dye-sensitized and perovskite solar cells.

Electrical properties and interfacial issues of high-k/Si MIS capacitors characterized by the thickness of Al{sub 2}O{sub 3} interlayer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Xing; Liu, Hongxia, E-mail: hxliu@mail.xidian.edu.cn; Fei, Chenxi

2016-06-15

A thin Al{sub 2}O{sub 3} interlayer deposited between La{sub 2}O{sub 3} layer and Si substrate was used to scavenge the interfacial layer (IL) by blocking the out-diffusion of substrate Si. Some advantages and disadvantages of this method were discussed in detail. Evident IL reduction corroborated by the transmission electron microscopy results suggested the feasibility of this method in IL scavenging. Significant improvements in oxygen vacancy and leakage current characteristics were achieved as the thickness of Al{sub 2}O{sub 3} interlayer increase. Meanwhile, some disadvantages such as the degradations in interface trap and oxide trapped charge characteristics were also observed.

Conducting polymer actuator based on chemically deposited polypyrrole and polyurethane-based solid polymer electrolyte working in air

NASA Astrophysics Data System (ADS)

Choi, Hwa-Jeong; Song, Young-Min; Chung, Ildoo; Ryu, Kwang-Sun; Jo, Nam-Ju

2009-02-01

Conducting polymers (CPs), such as polypyrrole, polythiophene, and polyaniline, are unique in that they have switchable properties due to their two or more mechanically stable oxidation states. Thus, their films or coatings can be easily switched by the application of a small voltage and current to change their volume during electrochemical redox processes. In particular, polypyrrole (PPy) has been studied most extensively because of its high electrical conductivity and good environmental stability under ambient conditions. In this work, we have studied a new CP actuator, fully polymeric, assembled with two PPy film electrodes and a solid polymer electrolyte (SPE), polyurethane/Mg(ClO4)2. Polyurethanes (PUs) were synthesized from 4,4'-diphenylmethane diisocyanate (MDI), 1,4-butanediol (1,4-BD) and three types of polyol: poly(ethylene glycol) (PEG), poly(propylene glycol) (PPG), and PPG-block-PEG-block-PPG (PPG-co-PEG). The chemical polymerization of PPy by immersion in Py monomer aqueous solution and oxidant aqueous solution is an adequate method to prepare PU/PPy composite film as an actuator. To find the proper thickness of the PPy coating layer for actuation, we measured the displacements of the actuators according to the thickness of the PPy coating layer. The displacement of all actuators is discussed in connection with the properties of the SPE and PPy. All the results obtained in this work show the feasibility of electrochemomechanical devices based on PPy and SPE film being able to work in air.

Ion Diffusion-Directed Assembly Approach to Ultrafast Coating of Graphene Oxide Thick Multilayers.

PubMed

Zhao, Xiaoli; Gao, Weiwei; Yao, Weiquan; Jiang, Yanqiu; Xu, Zhen; Gao, Chao

2017-10-24

The layer-by-layer (LbL) assembly approach has been widely used to fabricate multilayer coatings on substrates with multiple cycles, whereas it is hard to access thick films efficiently. Here, we developed an ion diffusion-directed assembly (IDDA) strategy to rapidly make multilayer thick coatings in one step on arbitrary substrates. To achieve multifunctional coatings, graphene oxide (GO) and metallic ions were selected as the typical building blocks and diffusion director in IDDA, respectively. With diffusion of metallic ions from substrate to negatively charged GO dispersion spontaneously (i.e., from high-concentration region to low-concentration region), GO was assembled onto the substrate sheet-by-sheet via sol-gel transformation. Because metallic ions with size of subnanometers can diffuse directionally and freely in the aqueous dispersion, GO was coated on the substrate efficiently, giving rise to films with desired thickness up to 10 μm per cycle. The IDDA approach shows three main merits: (1) high efficiency with a μm-scale coating rate; (2) controllability over thickness and evenness; and (3) generality for substrates of plastics, metals and ceramics with any shapes and morphologies. With these merits, IDDA strategy was utilized in the efficient fabrication of functional graphene coatings that exhibit outstanding performance as supercapacitors, electromagnetic interference shielding textiles, and anticorrosion coatings. This IDDA approach can be extended to other building blocks including polymers and colloidal nanoparticles, promising for the scalable production and application of multifunctional coatings.

Poly(cyclohexylethylene)- block-poly(ethylene oxide) block polymers for metal oxide templating

DOE PAGES

Schulze, Morgan W.; Sinturel, Christophe; Hillmyer, Marc A.

2015-09-01

A series of poly(cyclohexylethylene)- block-poly(ethylene oxide) (CEO) diblock copolymers were synthesized through tandem anionic polymerizations and heterogeneous catalytic hydrogenation. Solvent-annealed CEO diblock films were used to template dense arrays of inorganic oxide nanodots via simple spin coating of an inorganic precursor solution atop the ordered film. The substantial chemical dissimilarity of the two blocks enables (i) selective inclusion of the inorganic precursor within the PEO domain and (ii) the formation of exceptionally small feature sizes due to a relatively large interaction parameter estimated from mean-field analysis of the order–disorder transition temperatures of compositionally symmetric samples. UV/ozone treatment following incorporation producesmore » an ordered arrangement of oxide nanodots and simultaneously removes the block polymer template. However, we report the smallest particles (6 ± 1 nm) templated from a selective precursor insertion method to date using a block polymer scaffold.« less

The optimum titanium precursor of fabricating TiO2 compact layer for perovskite solar cells.

PubMed

Qin, Jianqiang; Zhang, Zhenlong; Shi, Wenjia; Liu, Yuefeng; Gao, Huiping; Mao, Yanli

2017-12-29

Perovskite solar cells (PSCs) have attracted tremendous attentions due to its high performance and rapid efficiency promotion. Compact layer plays a crucial role in transferring electrons and blocking charge recombination between the perovskite layer and fluorine-doped tin oxide (FTO) in PSCs. In this study, compact TiO 2 layers were synthesized by spin-coating method with three different titanium precursors, titanium diisopropoxide bis (acetylacetonate) (c-TTDB), titanium isopropoxide (c-TTIP), and tetrabutyl titanate (c-TBOT), respectively. Compared with the PSCs based on the widely used c-TTDB and c-TTIP, the device based on c-TBOT has significantly enhanced performance, including open-circuit voltage, short-circuit current density, fill factor, and hysteresis. The significant enhancement is ascribed to its excellent morphology, high conductivity and optical properties, fast charge transfer, and large recombination resistance. Thus, a power conversion efficiency (PCE) of 17.03% has been achieved for the solar cells based on c-TBOT.

The optimum titanium precursor of fabricating TiO2 compact layer for perovskite solar cells

NASA Astrophysics Data System (ADS)

Qin, Jianqiang; Zhang, Zhenlong; Shi, Wenjia; Liu, Yuefeng; Gao, Huiping; Mao, Yanli

2017-12-01

Perovskite solar cells (PSCs) have attracted tremendous attentions due to its high performance and rapid efficiency promotion. Compact layer plays a crucial role in transferring electrons and blocking charge recombination between the perovskite layer and fluorine-doped tin oxide (FTO) in PSCs. In this study, compact TiO2 layers were synthesized by spin-coating method with three different titanium precursors, titanium diisopropoxide bis (acetylacetonate) (c-TTDB), titanium isopropoxide (c-TTIP), and tetrabutyl titanate (c-TBOT), respectively. Compared with the PSCs based on the widely used c-TTDB and c-TTIP, the device based on c-TBOT has significantly enhanced performance, including open-circuit voltage, short-circuit current density, fill factor, and hysteresis. The significant enhancement is ascribed to its excellent morphology, high conductivity and optical properties, fast charge transfer, and large recombination resistance. Thus, a power conversion efficiency (PCE) of 17.03% has been achieved for the solar cells based on c-TBOT.

Oriented conductive oxide electrodes on SiO2/Si and glass

DOEpatents

Jia, Quanxi; Arendt, Paul N.

2001-01-01

A thin film structure is provided including a silicon substrate with a layer of silicon dioxide on a surface thereof, and a layer of cubic oxide material deposited upon the layer of silicon dioxide by ion-beam-assisted-deposition, said layer of cubic oxide material characterized as biaxially oriented. Preferably, the cubic oxide material is yttria-stabilized zirconia. Additional thin layers of biaxially oriented ruthenium oxide or lanthanum strontium cobalt oxide are deposited upon the layer of yttria-stabilized zirconia. An intermediate layer of cerium oxide is employed between the yttria-stabilized zirconia layer and the lanthanum strontium cobalt oxide layer. Also, a layer of barium strontium titanium oxide can be upon the layer of biaxially oriented ruthenium oxide or lanthanum strontium cobalt oxide. Also, a method of forming such thin film structures, including a low temperature deposition of a layer of a biaxially oriented cubic oxide material upon the silicon dioxide surface of a silicon dioxide/silicon substrate is provided.

Ultrathin and Atomically Flat Transition-Metal Oxide: Promising Building Blocks for Metal-Insulator Electronics.

PubMed

Cui, Qingsong; Sakhdari, Maryam; Chamlagain, Bhim; Chuang, Hsun-Jen; Liu, Yi; Cheng, Mark Ming-Cheng; Zhou, Zhixian; Chen, Pai-Yen

2016-12-21

We present a new and viable template-assisted thermal synthesis method for preparing amorphous ultrathin transition-metal oxides (TMOs) such as TiO 2 and Ta 2 O 5 , which are converted from crystalline two-dimensional (2D) transition-metal dichalcogenides (TMDs) down to a few atomic layers. X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), and scanning transmission electron microscopy (STEM) were used to characterize the chemical composition and bonding, surface morphology, and atomic structure of these ultrathin amorphous materials to validate the effectiveness of our synthesis approach. Furthermore, we have fabricated metal-insulator-metal (MIM) diodes using the TiO 2 and Ta 2 O 5 as ultrathin insulating layers with low potential barrier heights. Our MIM diodes show a clear transition from direct tunneling to Fowler-Nordheim tunneling, which was not observed in previously reported MIM diodes with TiO 2 or Ta 2 O 5 as the insulating layer. We attribute the improved performance of our MIM diodes to the excellent flatness and low pinhole/defect densities in our TMO insulting layers converted from 2D TMDs, which enable the low-threshold and controllable electron tunneling transport. We envision that it is possible to use the ultrathin TMOs converted from 2D TMDs as the insulating layer of a wide variety of metal-insulator and field-effect electronic devices for various applications ranging from microwave mixing, parametric conversion, infrared photodetection, emissive energy harvesting, to ultrafast electronic switching.

Y0.08Sr0.88TiO3-CeO2 composite as a diffusion barrier layer for stainless-steel supported solid oxide fuel cell

NASA Astrophysics Data System (ADS)

Kim, Kun Joong; Kim, Sun Jae; Choi, Gyeong Man

2016-03-01

A new diffusion barrier layer (DBL) is proposed for solid oxide fuel cells (SOFCs) supported on stainless-steel where DBL prevents inter-diffusion of atoms between anode and stainless steel (STS) support during fabrication and operation of STS-supported SOFCs. Half cells consisting of dense yttria-stabilized zirconia (YSZ) electrolyte, porous Ni-YSZ anode layer, and ferritic STS support, with or without Y0.08Sr0.88TiO3-CeO2 (YST-CeO2) composite DBL, are prepared by tape casting and co-firing at 1250 and 1350 °C, respectively, in reducing (H2) atmosphere. The porous YST-CeO2 layer (t ∼ 60 μm) blocks inter-diffusion of Fe and Ni, and captures the evaporated Cr during cell fabrication (1350 °C). The cell with DBL and La0.6Sr0.4Co0.2Fe0.8O3-δ (LSCF) cathode achieved a maximum power density of ∼220 mW cm-2 which is stable at 700 °C. In order to further improve the power performance, Ni coarsening in anode during co-firing must be prevented or alternative anode which is resistive to coarsening is suggested. This study demonstrates that the new YST-CeO2 layer is a promising as a DBL for stainless-steel-supported SOFCs fabricated with co-firing process.

Organic photosensitive cells having a reciprocal-carrier exciton blocking layer

DOEpatents

Rand, Barry P [Princeton, NJ; Forrest, Stephen R [Princeton, NJ; Thompson, Mark E [Anaheim Hills, CA

2007-06-12

A photosensitive cell includes an anode and a cathode; a donor-type organic material and an acceptor-type organic material forming a donor-acceptor junction connected between the anode and the cathode; and an exciton blocking layer connected between the acceptor-type organic material of the donor-acceptor junction and the cathode, the blocking layer consisting essentially of a material that has a hole mobility of at least 10.sup.-7 cm.sup.2/V-sec or higher, where a HOMO of the blocking layer is higher than or equal to a HOMO of the acceptor-type material.

The crystal structures of BiTeO 3I, NdTeO 3X (X=Cl, Br) and Bi 5TeO 8.5I 2: some crystal chemistry peculiarities of layered Bi(Ln)Te oxyhalides

NASA Astrophysics Data System (ADS)

Berdonosov, Peter S.; Charkin, Dmitry O.; Kusainova, Ardak M.; Hervoches, Charles H.; Dolgikh, Valeriy A.; Lightfoot, Philip

2000-09-01

Four new layered oxyhalides related to the Sillen family have been prepared and characterized by Rietveld refinement of powder X-ray and neutron diffraction data. BiTeO 3I and NdTeO 3Br both adopt tetragonal symmetry, space group P4/ nmm (for BiTeO 3I, a=4.10811(8), c=27.988(1) Å; NdTeO 3Br, a=4.06603(7), c=26.922(1) Å, at 25°C). The structures are composed of triple and double fluorite-related mixed metal oxide layers separated by single and double halogen layers, in the sequence MTe 2O 5XXMTe 2O 5XM 2O 2X, which may be represented by the symbol X 13X 13X 22, where the subscript signifies the number of halogen layers and the superscript the number of metal sublayers within the fluorite block, by analogy with Sillen's notation. The double fluorite layers are occupied exclusively by Bi, whereas there is an ordered arrangement of Bi/Te within the triple fluorite layers, with Te exclusively occupying the outer sublayers of the block. NdTeO 3Cl adopts an orthorhombically distorted form of this structure type, space group Pmmn, a=4.08096(8), b=4.03441(8), c=25.7582(7) Å at 25°C. Bi 5TeO 8.5I 2 adopts a distorted, non-centrosymmetric version of the simpler X 13 structure type, space group Cmm2, a=5.6878(3), b=5.7230(3), c=9.7260(6) Å, consisting of single halogen layers sandwiched between triple fluorite layers, in which there is partial ordering of the Bi/Te cations.

Effect of Ir-Mn composition on exchange bias and thermal stability of spin valves with nano-oxide layers

NASA Astrophysics Data System (ADS)

Liu, Y. F.; Cai, J. W.; Lai, W. Y.; Yu, G. H.

2008-05-01

The Ir-Mn bottom-pinned spin valves with nano-oxide layers (NOLs), Ta /Ni81Fe19/Ir-Mn/Co90Fe10/NOL/Co90Fe10/Cu/Co90Fe10/NOL/Ta, were fabricated by dc magnetron sputtering. The magnetoresistance (MR), magnetization, and exchange bias have been studied as a function of Ir-Mn composition and annealing temperature. It was observed that the spin valves with the Ir-Mn layer containing relatively low Mn content (58.9-72.4at.% Mn) show the best thermal endurance. For these samples, the Mn diffusion is effectively hampered by the NOL with a large MR value of about 12.5% even after annealing at 300°C. On the other hand, the exchange bias field of the pinned CoFe layer shows a maximum at Mn content of about 72.4at.%, which is different from the widely adopted composition, Ir-80at.% Mn, optimized from the top-pinned NiFe /Ir-Mn system. Moreover, the blocking temperature of the Ir -Mn/CoFe system with 72.4at.% Mn is higher than that with 80.6at.% Mn. The present results suggest that the Ir -Mn/CoFe pinning system with Mn content at about 72% renders the most favorable exchange bias and the best thermal stability for the bottom-pinned specular spin valves.

Vasoinhibins regulate the inner and outer blood-retinal barrier and limit retinal oxidative stress.

PubMed

Arredondo Zamarripa, David; Díaz-Lezama, Nundehui; Meléndez García, Rodrigo; Chávez Balderas, Jesús; Adán, Norma; Ledesma-Colunga, Maria G; Arnold, Edith; Clapp, Carmen; Thebault, Stéphanie

2014-01-01

Vasoinhibins are prolactin fragments present in the retina, where they have been shown to prevent the hypervasopermeability associated with diabetes. Enhanced bradykinin (BK) production contributes to the increased transport through the blood-retina barrier (BRB) in diabetes. Here, we studied if vasoinhibins regulate BRB permeability by targeting the vascular endothelium and retinal pigment epithelium (RPE) components of this barrier. Intravitreal injection of BK in male rats increased BRB permeability. Vasoinhibins prevented this effect, as did the B2 receptor antagonist Hoe-140. BK induced a transient decrease in mouse retinal and brain capillary endothelial monolayer resistance that was blocked by vasoinhibins. Both vasoinhibins and the nitric oxide (NO) synthase inhibitor L-NAME, but not the antioxidant N-acetyl cysteine (NAC), blocked the transient decrease in bovine umbilical vein endothelial cell (BUVEC) monolayer resistance induced by BK; this block was reversed by the NO donor DETANONOate. Vasoinhibins also prevented the BK-induced actin cytoskeleton redistribution, as did L-NAME. BK transiently decreased human RPE (ARPE-19) cell monolayer resistance, and this effect was blocked by vasoinhibins, L-NAME, and NAC. DETANONOate reverted the blocking effect of vasoinhibins. Similar to BK, the radical initiator Luperox induced a reduction in ARPE-19 cell monolayer resistance, which was prevented by vasoinhibins. These effects on RPE resistance coincided with actin cytoskeleton redistribution. Intravitreal injection of vasoinhibins reduced the levels of reactive oxygen species (ROS) in retinas of streptozotocin-induced diabetic rats, particularly in the RPE and capillary-containing layers. Thus, vasoinhibins reduce BRB permeability by targeting both its main inner and outer components through NO- and ROS-dependent pathways, offering potential treatment strategies against diabetic retinopathies.

Vasoinhibins regulate the inner and outer blood-retinal barrier and limit retinal oxidative stress

PubMed Central

Arredondo Zamarripa, David; Díaz-Lezama, Nundehui; Meléndez García, Rodrigo; Chávez Balderas, Jesús; Adán, Norma; Ledesma-Colunga, Maria G.; Arnold, Edith; Clapp, Carmen; Thebault, Stéphanie

2014-01-01

Vasoinhibins are prolactin fragments present in the retina, where they have been shown to prevent the hypervasopermeability associated with diabetes. Enhanced bradykinin (BK) production contributes to the increased transport through the blood-retina barrier (BRB) in diabetes. Here, we studied if vasoinhibins regulate BRB permeability by targeting the vascular endothelium and retinal pigment epithelium (RPE) components of this barrier. Intravitreal injection of BK in male rats increased BRB permeability. Vasoinhibins prevented this effect, as did the B2 receptor antagonist Hoe-140. BK induced a transient decrease in mouse retinal and brain capillary endothelial monolayer resistance that was blocked by vasoinhibins. Both vasoinhibins and the nitric oxide (NO) synthase inhibitor L-NAME, but not the antioxidant N-acetyl cysteine (NAC), blocked the transient decrease in bovine umbilical vein endothelial cell (BUVEC) monolayer resistance induced by BK; this block was reversed by the NO donor DETANONOate. Vasoinhibins also prevented the BK-induced actin cytoskeleton redistribution, as did L-NAME. BK transiently decreased human RPE (ARPE-19) cell monolayer resistance, and this effect was blocked by vasoinhibins, L-NAME, and NAC. DETANONOate reverted the blocking effect of vasoinhibins. Similar to BK, the radical initiator Luperox induced a reduction in ARPE-19 cell monolayer resistance, which was prevented by vasoinhibins. These effects on RPE resistance coincided with actin cytoskeleton redistribution. Intravitreal injection of vasoinhibins reduced the levels of reactive oxygen species (ROS) in retinas of streptozotocin-induced diabetic rats, particularly in the RPE and capillary-containing layers. Thus, vasoinhibins reduce BRB permeability by targeting both its main inner and outer components through NO- and ROS-dependent pathways, offering potential treatment strategies against diabetic retinopathies. PMID:25368550

Control of metamorphic buffer structure and device performance of In(x)Ga(1-x)As epitaxial layers fabricated by metal organic chemical vapor deposition.

PubMed

Nguyen, H Q; Yu, H W; Luc, Q H; Tang, Y Z; Phan, V T H; Hsu, C H; Chang, E Y; Tseng, Y C

2014-12-05

Using a step-graded (SG) buffer structure via metal-organic chemical vapor deposition, we demonstrate a high suitability of In0.5Ga0.5As epitaxial layers on a GaAs substrate for electronic device application. Taking advantage of the technique's precise control, we were able to increase the number of SG layers to achieve a fairly low dislocation density (∼10(6) cm(-2)), while keeping each individual SG layer slightly exceeding the critical thickness (∼80 nm) for strain relaxation. This met the demanded but contradictory requirements, and even offered excellent scalability by lowering the whole buffer structure down to 2.3 μm. This scalability overwhelmingly excels the forefront studies. The effects of the SG misfit strain on the crystal quality and surface morphology of In0.5Ga0.5As epitaxial layers were carefully investigated, and were correlated to threading dislocation (TD) blocking mechanisms. From microstructural analyses, TDs can be blocked effectively through self-annihilation reactions, or hindered randomly by misfit dislocation mechanisms. Growth conditions for avoiding phase separation were also explored and identified. The buffer-improved, high-quality In0.5Ga0.5As epitaxial layers enabled a high-performance, metal-oxide-semiconductor capacitor on a GaAs substrate. The devices displayed remarkable capacitance-voltage responses with small frequency dispersion. A promising interface trap density of 3 × 10(12) eV(-1) cm(-2) in a conductance test was also obtained. These electrical performances are competitive to those using lattice-coherent but pricey InGaAs/InP systems.

Carbazole/triarylamine based polymers as a hole injection/transport layer in organic light emitting devices.

PubMed

Wang, Hui; Ryu, Jeong-Tak; Kwon, Younghwan

2012-05-01

This study examined the influence of the charge injection barriers on the performance of organic light emitting diodes (OLEDs) using polymers with a stepwise tuned ionization potential (I(p) approximately -5.01 - -5.29 eV) between the indium tin oxide (ITO) (phi approximately -4.8 eV) anode and tris(8-hydroxyquinolinato) aluminium (Alq3) (I(p) approximately -5.7 eV) layer. The energy levels of the polymers were tuned by structural modification. Double layer devices were fabricated with a configuration of ITO/polymer/Alq3/LiF/Al, where the polymers, Alq3, and LiF/Al were used as the hole injection/transport layer, emissive electron transport layer, and electron injection/cathode, respectively. Using the current density-voltage (J-V), luminescence-voltage (L-V) and efficiencies in these double layer devices, the device performance was evaluated in terms of the energy level alignments at the interfaces, such as the hole injection barriers (phi(h)(iTO/polymer) and phi(h)(polymer/Alq3)) from ITO through the polymers into the Alq3 layer, and the electron injection barrier (phi(e)(polymer/Alq3) or electron/exciton blocking barrier) at the polymer/Alq3 interface.

Effects of TiO2 electron blocking layer on photovoltaic performance of photo-electrochemical cell

NASA Astrophysics Data System (ADS)

Bin, Jae-Wook; Kim, Doo-Hwan; Sung, Youl-Moon; Park, Min-Woo

2014-06-01

Dye-sensitized solar cells (DSCs) have used transparent conductive Fluorine-doped SnO2 (FTO) glass/porous TiO2 layer attached using dye molecules/electrolytes (I-/I3-)/Platinium-coated FTO glass configuration. In this work, prior to the coating of nanoporous TiO2 layer on FTO glass, a dense layer of TiO2 film with a thickness of less than ∼100 nm was deposited directly onto the FTO as an electron blocking layer by radio frequency (RF) magnetron sputtering. Under 100 mW/cm2 illumination at AM 1.5, the energy conversion efficiency (η) of the prepared DSC with electron blocking layer of 80 nm thickness was 6.9% (Voc = 0.67 V, Jsc = 12.18 mA/cm2, ff = 0.63), which is increased by 1.3% compared to the typical cell without electron blocking layer.

Rock cities, periglacial mass-wasting, and honeycomb weathering in Warren County, northwestern Pennsylvania

DOE Office of Scientific and Technical Information (OSTI.GOV)

Inners, J.D.; Sevon, W.D.; Moore, M.E.

1993-03-01

Imposing hilltop rock-cities developed from widely jointed outcrops of Olean conglomerate (Lower Pennsylvanian) create picturesque scenery on the Allegheny High Plateau in Warren Co., Pa. At least six such rock cities 2 to 5 acres in extent are associated with the Late Wisconsinan glacial border in the northern half of the county. Farther to the south, jumbled Olean and Knapp (Lower Mississippian) joint blocks occur on steep slopes below valley-wall cliffs. The rock cities and accumulations of displaced joint blocks are largely relics of Late Wisconsinan periglacial mass-wasting. Frost splitting initiated opening of bedrock joints to form buildings. Gravity, soilmore » wedging, and possibly gelifluction then widened the fissures into streets. Gelifluction moved blocks downslope and oriented their long axes parallel with slope (Warren Rocks). Forward toppling of high, unstable blocks contributed to mass-movement on some steep slopes (Rimrock). Today, rock cities and downslope blocks are stable in areas of gentle (less than 10 percent) slopes, but toppling, solifluction, creep, and debris flows cause continued slow movement of large blocks on moderately steep to steep (greater than 30 percent) slopes. Blocks of Olean and Knapp conglomerate have both stratabound pitting and intricate honeycomb weathering. Deep pitting is controlled largely by variations in silica cementation. Honeycomb weathering is most evident in sandy layers and results from patterns of iron-oxide impregnation. Both are Holocene surface-weathering processes.« less

Overview of OT

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pate, R.; Dooley, R.B.

1995-01-01

At the last International Fossil Cycle Chemistry Conference in June 1991, a report was given on the Electric Power Research Institute (EPRI) sponsored project to study and transfer technology on the use of oxygenated feedwater treatment (OT). The report basically summarized the excellent results of employing OT worldwide, and updated the project activities which included development of an EPRI guidance document for implementation of OT in US utilities. Since the OT conversions of Georgia Power`s Wansley Unit No. 1 and Ohio Edison`s Sammis Unit 5 in November 1991, over 30 once-through units have subsequently been converted. In 1994, the firstmore » US drum unit was converted. The results have been outstanding with very large reductions of feedwater corrosion products (usually Fe<1 ppb at the economizer inlet) as a result of the more oxidizing environment (>+120 mV) and the change of the surface oxide layer from magnetite to ferric oxide hydrate (FeOOH) throughout the feedwater system. The benefits accrue because FeOOH blocks the pores of original Fe{sub 3}O{sub 4} reducing the transport of oxygen and iron ions through the layer. These surface layers of FeOOH also have a much lower solubility in flowing feedwater. This paper will provide an overview of the two supercritical/subcritical unit feedwater treatment technologies, (OT & AVT). In addition, the results of the two EPRI OT demonstration units (Wansley 1, Georgia Power Co. & Sammis 5, Ohio Edison) will be presented.« less

Artificial semiconductor/insulator superlattice channel structure for high-performance oxide thin-film transistors

PubMed Central

Ahn, Cheol Hyoun; Senthil, Karuppanan; Cho, Hyung Koun; Lee, Sang Yeol

2013-01-01

High-performance thin-film transistors (TFTs) are the fundamental building blocks in realizing the potential applications of the next-generation displays. Atomically controlled superlattice structures are expected to induce advanced electric and optical performance due to two-dimensional electron gas system, resulting in high-electron mobility transistors. Here, we have utilized a semiconductor/insulator superlattice channel structure comprising of ZnO/Al2O3 layers to realize high-performance TFTs. The TFT with ZnO (5 nm)/Al2O3 (3.6 nm) superlattice channel structure exhibited high field effect mobility of 27.8 cm2/Vs, and threshold voltage shift of only < 0.5 V under positive/negative gate bias stress test during 2 hours. These properties showed extremely improved TFT performance, compared to ZnO TFTs. The enhanced field effect mobility and stability obtained for the superlattice TFT devices were explained on the basis of layer-by-layer growth mode, improved crystalline nature of the channel layers, and passivation effect of Al2O3 layers. PMID:24061388

Effect of poly(ethylene oxide) homopolymer and two different poly(ethylene oxide-b-poly(propylene oxide)-b-poly(ethylene oxide) triblock copolymers on morphological, optical, and mechanical properties of nanostructured unsaturated polyester.

PubMed

Builes, Daniel H; Hernández-Ortiz, Juan P; Corcuera, Ma Angeles; Mondragon, Iñaki; Tercjak, Agnieszka

2014-01-22

Novel nanostructured unsaturated polyester resin-based thermosets, modified with poly(ethylene oxide) (PEO), poly(propylene oxide) (PPO), and two poly(ethylene oxide-b-propylene oxide-b-ethylene oxide) block copolymers (BCP), were developed and analyzed. The effects of molecular weights, blocks ratio, and curing temperatures on the final morphological, optical, and mechanical properties were reported. The block influence on the BCP miscibility was studied through uncured and cured mixtures of unsaturated polyester (UP) resins with PEO and PPO homopolymers having molecular weights similar to molecular weights of the blocks of BCP. The final morphology of the nanostructured thermosetting systems, containing BCP or homopolymers, was investigated, and multiple mechanisms of nanostructuration were listed and explained. By considering the miscibility of each block before and after curing, it was determined that the formation of the nanostructured matrices followed a self-assembly mechanism or a polymerization-induced phase separation mechanism. The miscibility between PEO or PPO blocks with one of two phases of UP matrix was highlighted due to its importance in the final thermoset properties. Relationships between the final morphology and thermoset optical and mechanical properties were examined. The mechanisms and physics behind the morphologies lead toward the design of highly transparent, nanostructured, and toughened thermosetting UP systems.

Substrate Structures For Growth Of Highly Oriented And/Or Epitaxial Layers Thereon

DOEpatents

Arendt, Paul N.; Foltyn, Stephen R.; Groves, James R.; Jia, Quanxi

2005-07-26

A composite substrate structure including a substrate, a layer of a crystalline metal oxide or crystalline metal oxynitride material upon the substrate, a layer of an oriented cubic oxide material having a rock-salt-like structure upon the crystalline metal oxide or crystalline metal oxynitride material layer is provided together with additional layers such as one or more layers of a buffer material upon the oriented cubic oxide material layer. Jc's of 2.3×106 A/cm2 have been demonstrated with projected Ic's of 320 Amperes across a sample 1 cm wide for a superconducting article including a flexible polycrystalline metallic substrate, an inert oxide material layer upon the surface of the flexible polycrystalline metallic substrate, a layer of a crystalline metal oxide or crystalline metal oxynitride material upon the layer of the inert oxide material, a layer of an oriented cubic oxide material having a rock-salt-like structure upon the crystalline metal oxide or crystalline metal oxynitride material layer, a layer of a buffer material upon the oriented cubic oxide material layer, and, a top-layer of a high temperature superconducting material upon the layer of a buffer material.

Ion blocking dip shape analysis around a LaAlO3/SrTiO3 interface

NASA Astrophysics Data System (ADS)

Jalabert, D.; Zaid, H.; Berger, M. H.; Fongkaew, I.; Lambrecht, W. R. L.; Sehirlioglu, A.

2018-05-01

We present an analysis of the widths of the blocking dips obtained in MEIS ion blocking experiments of two LaAlO3/SrTiO3 heterostructures differing in their LaAlO3 layer thicknesses. In the LaAlO3 layers, the observed blocking dips are larger than expected. This enlargement is the result of the superposition of individual dips at slightly different angular positions revealing a local disorder in the atomic alignment, i.e., layer buckling. By contrast, in the SrTiO3 substrate, just below the interface, the obtained blocking dips are thinner than expected. This thinning indicates that the blocking atoms stand at a larger distance from the scattering center than expected. This is attributed to an accumulation of Sr vacancies at the layer/substrate interface which induces lattice distortions shifting the atoms off the scattering plane.

High Temperature Superconducting Thick Films

DOEpatents

Arendt, Paul N.; Foltyn, Stephen R.; Groves, James R.; Holesinger, Terry G.; Jia, Quanxi

2005-08-23

An article including a substrate, a layer of an inert oxide material upon the surface of the substrate, (generally the inert oxide material layer has a smooth surface, i.e., a RMS roughness of less than about 2 nm), a layer of an amorphous oxide or oxynitride material upon the inert oxide material layer, a layer of an oriented cubic oxide material having a rock-salt-like structure upon the amorphous oxide material layer is provided together with additional layers such as at least one layer of a buffer material upon the oriented cubic oxide material layer or a HTS top-layer of YBCO directly upon the oriented cubic oxide material layer. With a HTS top-layer of YBCO upon at least one layer of a buffer material in such an article, Jc's of 1.4×106 A/cm2 have been demonstrated with projected Ic's of 210 Amperes across a sample 1 cm wide.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jiang, Zhenyu, E-mail: jiangzhenyu1201@hotmail.com, E-mail: jianxu@engr.psu.edu; Liu, Yan; Mo, Chen

In an attempt to suppress the dark current, the barrier layer engineer for solution-processed PbSe colloidal quantum-dot (CQD) photodetectors has been investigated in the present study. It was found that the dark current can be significantly suppressed by implementing two types of carrier blocking layers, namely, hole blocking layer and electron blocking layer, sandwiched in between two active PbSe CQD layers. Meanwhile no adverse impact has been observed for the photo current. Our study suggests that this improvement resides on the transport pathway created via carrier recombination at intermediate layer, which provides wide implications for the suppression of dark currentmore » for infrared photodetectors.« less

SAQP and EUV block patterning of BEOL metal layers on IMEC's iN7 platform

NASA Astrophysics Data System (ADS)

Bekaert, Joost; Di Lorenzo, Paolo; Mao, Ming; Decoster, Stefan; Larivière, Stéphane; Franke, Joern-Holger; Blanco Carballo, Victor M.; Kutrzeba Kotowska, Bogumila; Lazzarino, Frederic; Gallagher, Emily; Hendrickx, Eric; Leray, Philippe; Kim, R. Ryoung-han; McIntyre, Greg; Colsters, Paul; Wittebrood, Friso; van Dijk, Joep; Maslow, Mark; Timoshkov, Vadim; Kiers, Ton

2017-03-01

The imec N7 (iN7) platform has been developed to evaluate EUV patterning of advanced logic BEOL layers. Its design is based on a 42 nm first-level metal (M1) pitch, and a 32 nm pitch for the subsequent M2 layer. With these pitches, the iN7 node is an `aggressive' full-scaled N7, corresponding to IDM N7, or foundry N5. Even in a 1D design style, single exposure of the 16 nm half-pitch M2 layer is very challenging for EUV lithography, because of its tight tip-to-tip configurations. Therefore, the industry is considering the hybrid use of ArFi-based SAQP combined with EUV Block as an alternative to EUV single exposure. As a consequence, the EUV Block layer may be one of the first layers to adopt EUV lithography in HVM. In this paper, we report on the imec iN7 SAQP + Block litho performance and process integration, targeting the M2 patterning for a 7.5 track logic design. The Block layer is exposed on an ASML NXE:3300 EUV-scanner at imec, using optimized illumination conditions and state-of-the-art metal-containing negative tone resist (Inpria). Subsequently, the SAQP and block structures are characterized in a morphological study, assessing pattern fidelity and CD/EPE variability. The work is an experimental feasibility study of EUV insertion, for SAQP + Block M2 patterning on an industry-relevant N5 use-case.

Liquid metals as ultra-stretchable, soft, and shape reconfigurable conductors

NASA Astrophysics Data System (ADS)

Eaker, Collin B.; Dickey, Michael D.

2015-05-01

Conventional, rigid materials remain the key building blocks of most modern electronic devices, but they are limited in their ability to conform to curvilinear surfaces. It is possible to make electronic components that are flexible and in some cases stretchable by utilizing thin films, engineered geometries, or inherently soft and stretchable materials that maintain their function during deformation. Here, we describe the properties and applications of a micromoldable liquid metal that can form conductive components that are ultra-stretchable, soft, and shape-reconfigurable. This liquid metal is a gallium-based alloy with low viscosity and high conductivity. The metal develops spontaneously a thin, passivating oxide layer on the surface that allows the metal to be molded into non-spherical shapes, including films and wires, and patterned by direct-write techniques or microfluidic injection. Furthermore, unlike mercury, the liquid metal has low toxicity and negligible vapor pressure. This paper discusses the mechanical and electrical properties of the metal in the context of electronics, and discusses how the properties of the oxide layer have been exploited for new patterning techniques that enable soft, stretchable and reconfigurable devices.

Efficient and self-adaptive in-situ learning in multilayer memristor neural networks.

PubMed

Li, Can; Belkin, Daniel; Li, Yunning; Yan, Peng; Hu, Miao; Ge, Ning; Jiang, Hao; Montgomery, Eric; Lin, Peng; Wang, Zhongrui; Song, Wenhao; Strachan, John Paul; Barnell, Mark; Wu, Qing; Williams, R Stanley; Yang, J Joshua; Xia, Qiangfei

2018-06-19

Memristors with tunable resistance states are emerging building blocks of artificial neural networks. However, in situ learning on a large-scale multiple-layer memristor network has yet to be demonstrated because of challenges in device property engineering and circuit integration. Here we monolithically integrate hafnium oxide-based memristors with a foundry-made transistor array into a multiple-layer neural network. We experimentally demonstrate in situ learning capability and achieve competitive classification accuracy on a standard machine learning dataset, which further confirms that the training algorithm allows the network to adapt to hardware imperfections. Our simulation using the experimental parameters suggests that a larger network would further increase the classification accuracy. The memristor neural network is a promising hardware platform for artificial intelligence with high speed-energy efficiency.

Thermomagnetic properties of peat-soil layers from Sag pond near Lembang Fault, West Java, Indonesia

NASA Astrophysics Data System (ADS)

Iryanti, Mimin; Wibowo, Dimas Maulana; Bijaksana, Satria

2015-09-01

Sag pond is a body of water near fault system as water flows blocked by the fault. Sag pond is a special type of environment for peat formation as peat layers in were deposited as the fault moves in episodic fashion. Depending on the history of the fault, peat layers are often interrupted by soil layers. In this study, core of peat-soil layers from a Sag pond in Karyawangi Village near Lembang Fault was obtained and analyzed for its magnetic properties. The 5 m core was obtained using a hand auger. Individual samples were obtained every cm and measured for their magnetic susceptibility. In general, there are three distinct magnetic susceptibility layers that were associated with peat and soil layers. The upper first 1 m is unconsolidated mud layer with its relatively high magnetic susceptibility. Between 1-2.81 m, there is consolidated mud layer and the lowest part (2.82-5) m is basically peat layer. Six samples were then measured for their thermomagnetic properties by measuring their susceptibility during heating and cooling from room temperature to 700°C. The thermomagnetic profiles provide Curie temperatures for various magnetic minerals in the cores. It was found that the upper part (unconsolidated mud) contains predominantly iron-oxides, such as magnetite while the lowest part (peat layer) contains significant amount of iron-sulphides, presumably greigite.

Template-assisted electrostatic spray deposition as a new route to mesoporous, macroporous, and hierarchically porous oxide films.

PubMed

Sokolov, S; Paul, B; Ortel, E; Fischer, A; Kraehnert, R

2011-03-01

A novel film coating technique, template-assisted electrostatic spray deposition (TAESD), was developed for the synthesis of porous metal oxide films and tested on TiO(2). Organic templates are codeposited with the titania precursor by electrostatic spray deposition and then removed during calcination. Resultant films are highly porous with pores casted by uniformly sized templates, which introduced a new level of control over the pore morphology for the ESD method. Employing the amphiphilic block copolymer Pluronic P123, PMMA latex spheres, or a combination of the two, mesoporous, macroporous, and hierarchically porous TiO(2) films are obtained. Decoupled from other coating parameters, film thickness can be controlled by deposition time or depositing multiple layers while maintaining the coating's structure and integrity.

Low-temperature roll-to-roll coating procedure of dye-sensitized solar cell photoelectrodes on flexible polymer-based substrates

NASA Astrophysics Data System (ADS)

Tinguely, Jean-Claude; Solarska, Renata; Braun, Artur; Graule, Thomas

2011-04-01

A new approach for the large-scale production of flexible photoelectrodes for dye-sensitized solar cells (DSSCs) is presented by roll-to-roll coating of a titanium dioxide nanodispersion containing the block copolymer 'Pluronic®' (PEOx-PPOy-PEOx, PEO: poly(ethylene oxide), PPO: poly(propylene oxide)). Functional DSSCs were assembled and the different coating procedures compared with respect to their solar power conversion efficiency. It is shown that the binder 'Pluronic' can be removed at processing temperatures as low as 140 °C, thus aiding achievement of sufficient adhesion to the ITO-PET support, higher porosity of the TiO2 layer and decreased crack appearance. Further optimization of this method is particularly promising when combined with other known low-temperature methods.

Significant Stability Enhancement in High-Efficiency Polymer:Fullerene Bulk Heterojunction Solar Cells by Blocking Ultraviolet Photons from Solar Light.

PubMed

Jeong, Jaehoon; Seo, Jooyeok; Nam, Sungho; Han, Hyemi; Kim, Hwajeong; Anthopoulos, Thomas D; Bradley, Donal D C; Kim, Youngkyoo

2016-04-01

Achievement of extremely high stability for inverted-type polymer:fullerene solar cells is reported, which have bulk heterojunction (BHJ) layers consisting of poly[4,8-bis(5-(2-ethylhexyl)thiophen-2-yl)benzo[1,2-b:4,5-b']dithiophene-alt-3-fluorothieno[3,4-b]thiophene-2-carboxylate] (PTB7-Th) and [6,6]-phenyl-C71-butyric acid methyl ester (PC 71 BM), by employing UV-cut filter (UCF) that is mounted on the front of glass substrates. The UCF can block most of UV photons below 403 nm at the expense of ≈20% reduction in the total intensity of solar light. Results show that the PTB7-Th:PC 71 BM solar cell with UCF exhibits extremely slow decay in power conversion efficiency (PCE) but a rapidly decayed PCE is measured for the device without UCF. The poor device stability without UCF is ascribed to the oxidative degradation of constituent materials in the BHJ layers, which give rise to the formation of PC 71 BM aggregates, as measured with high resolution and scanning transmission electron microscopy and X-ray photoelectron spectroscopy. The device stability cannot be improved by simply inserting poly(ethylene imine) (PEI) interfacial layer without UCF, whereas the lifetime of the PEI-inserted PTB7-Th:PC 71 BM solar cells is significantly enhanced when UCF is attached.

WE-E-18A-01: Large Area Avalanche Amorphous Selenium Sensors for Low Dose X-Ray Imaging

DOE Office of Scientific and Technical Information (OSTI.GOV)

Scheuermann, J; Goldan, A; Zhao, W

2014-06-15

Purpose: A large area indirect flat panel imager (FPI) with avalanche gain is being developed to achieve x-ray quantum noise limited low dose imaging. It uses a thin optical sensing layer of amorphous selenium (a-Se), known as High-Gain Avalanche Rushing Photoconductor (HARP), to detect optical photons generated from a high resolution x-ray scintillator. We will report initial results in the fabrication of a solid-state HARP structure suitable for a large area FPI. Our objective is to establish the blocking layer structures and defect suppression mechanisms that provide stable and uniform avalanche gain. Methods: Samples were fabricated as follows: (1) ITOmore » signal electrode. (2) Electron blocking layer. (3) A 15 micron layer of intrinsic a-Se. (4) Transparent hole blocking layer. (5) Multiple semitransparent bias electrodes to investigate avalanche gain uniformity over a large area. The sample was exposed to 50ps optical excitation pulses through the bias electrode. Transient time of flight (TOF) and integrated charge was measured. A charge transport simulation was developed to investigate the effects of varying blocking layer charge carrier mobility on defect suppression, avalanche gain and temporal performance. Results: Avalanche gain of ∼200 was achieved experimentally with our multi-layer HARP samples. Simulations using the experimental sensor structure produced the same magnitude of gain as a function of electric field. The simulation predicted that the high dark current at a point defect can be reduced by two orders of magnitude by blocking layer optimization which can prevent irreversible damage while normal operation remained unaffected. Conclusion: We presented the first solid state HARP structure directly scalable to a large area FPI. We have shown reproducible and uniform avalanche gain of 200. By reducing mobility of the blocking layers we can suppress defects and maintain stable avalanche. Future work will optimize the blocking layers to prevent lag and ghosting.« less

Synthesis and Stabilization of Supported Metal Catalysts by Atomic Layer Deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lu, Junling; Elam, Jeffrey W.; Stair, Peter C.

2013-03-12

Supported metal nanoparticles are among the most important cata-lysts for many practical reactions, including petroleum refining, automobile exhaust treatment, and Fischer–Tropsch synthesis. The catalytic performance strongly depends on the size, composition, and structure of the metal nanoparticles, as well as the underlying support. Scientists have used conventional synthesis methods including impregnation, ion exchange, and deposition–precipitation to control and tune these factors, to establish structure–performance relationships, and to develop better catalysts. Meanwhile, chemists have improved the stability of metal nanoparticles against sintering by the application of protective layers, such as polymers and oxides that encapsulate the metal particle. This often leadsmore » to decreased catalytic activity due to a lack of precise control over the thickness of the protective layer. A promising method of catalyst synthesis is atomic layer deposition (ALD). ALD is a variation on chemical vapor deposition in which metals, oxides, and other materials are deposited on surfaces by a sequence of self-limiting reactions. The self-limiting character of these reactions makes it possible to achieve uniform deposits on high-surface-area porous solids. Therefore, design and synthesis of advanced catalysts on the nanoscale becomes possible through precise control over the structure and composition of the underlying support, the catalytic active sites, and the protective layer. In this Account, we describe our advances in the synthesis and stabilization of supported metal catalysts by ALD. After a short introduction to the technique of ALD, we show several strategies for metal catalyst synthesis by ALD that take advantage of its self-limiting feature. Monometallic and bimetallic catalysts with precise control over the metal particle size, composition, and structure were achieved by combining ALD sequences, surface treatments, and deposition temperature control. Next, we describe ALD oxide overcoats applied with atomically precise thickness control that stabilize metal catalysts while preserving their catalytic function. We also discuss strategies for generation and control over the porosity of the overcoats that allow the embedded metal particles to remain accessible by reactants, and the details for ALD alumina overcoats on metal catalysts. Moreover, using methanol decomposition and oxidative dehydrogenation of ethane as probe reactions, we demonstrate that selectively blocking low coordination metal sites by oxide overcoats can provide another strategy to enhance both the durability and selectivity of metal catalysts.« less

Evidence of formation of site-selective inclusion complexation between beta-cyclodextrin and poly(ethylene oxide)-block-poly(propylene oxide)- block-poly(ethylene oxide) copolymers.

PubMed

Tsai, Chi-Chun; Zhang, Wen-Bin; Wang, Chien-Lung; Van Horn, Ryan M; Graham, Matthew J; Huang, Jing; Chen, Yongming; Guo, Mingming; Cheng, Stephen Z D

2010-05-28

A series of inclusion complexes of poly(ethylene oxide)-block-poly(propylene oxide)-block-poly(ethylene oxide) (PEO-b-PPO-b-PEO) with beta-cyclodextrin (beta-CD) was prepared. Their formation, structure, and dynamics were investigated by solution two-dimensional rotating-frame Overhauser effect spectroscopy (2D ROESY) and one-dimensional (1D) and 2D solid-state (13)C NMR. The inclusion complexes between the PEO-b-PPO-b-PEO copolymers and the beta-CDs were formed in aqueous solution and detected by 2D ROESY. The high efficiency of cross polarization and spin diffusion experiments in (13)C solid-state NMR showed that the mobility of the PPO blocks dramatically decreases after beta-CD complexation, indicating that they are selectively incorporated onto the PPO blocks. The hydrophobic cavities of beta-CD restrict the PPO block mobility, which is evidence of the formation of inclusion complexes in the solid state. The 2D wide-line separation NMR experiments suggested that beta-CDs only thread onto the PPO blocks while forming the inclusion complexes. The stoichiometry of inclusion complexes was studied using (1)H NMR, and a 3:1 (PO unit to beta-CD) was found for all inclusion complexes, which indicated that the number of threaded beta-CDs was only dependent on the molecular weight of the PPO blocks. 1D wide angle x-ray diffraction studies demonstrated that the beta-CD in the inclusion complex formed a channel-like structure that is different from the pure beta-CD crystal structure.

Evidence of formation of site-selective inclusion complexation between β-cyclodextrin and poly(ethylene oxide)-block-poly(propylene oxide)- block-poly(ethylene oxide) copolymers

NASA Astrophysics Data System (ADS)

Tsai, Chi-Chun; Zhang, Wen-Bin; Wang, Chien-Lung; Van Horn, Ryan M.; Graham, Matthew J.; Huang, Jing; Chen, Yongming; Guo, Mingming; Cheng, Stephen Z. D.

2010-05-01

A series of inclusion complexes of poly(ethylene oxide)-block-poly(propylene oxide)-block-poly(ethylene oxide) (PEO-b-PPO-b-PEO) with β-cyclodextrin (β-CD) was prepared. Their formation, structure, and dynamics were investigated by solution two-dimensional rotating-frame Overhauser effect spectroscopy (2D ROESY) and one-dimensional (1D) and 2D solid-state C13 NMR. The inclusion complexes between the PEO-b-PPO-b-PEO copolymers and the β-CDs were formed in aqueous solution and detected by 2D ROESY. The high efficiency of cross polarization and spin diffusion experiments in C13 solid-state NMR showed that the mobility of the PPO blocks dramatically decreases after β-CD complexation, indicating that they are selectively incorporated onto the PPO blocks. The hydrophobic cavities of β-CD restrict the PPO block mobility, which is evidence of the formation of inclusion complexes in the solid state. The 2D wide-line separation NMR experiments suggested that β-CDs only thread onto the PPO blocks while forming the inclusion complexes. The stoichiometry of inclusion complexes was studied using H1 NMR, and a 3:1 (PO unit to β-CD) was found for all inclusion complexes, which indicated that the number of threaded β-CDs was only dependent on the molecular weight of the PPO blocks. 1D wide angle x-ray diffraction studies demonstrated that the β-CD in the inclusion complex formed a channel-like structure that is different from the pure β-CD crystal structure.

Biocompatible Polysiloxane-Containing Diblock Copolymer PEO-b-PγMPS for Coating Magnetic Nanoparticles

PubMed Central

Chen, Hongwei; Wu, Xinying; Duan, Hongwei; Wang, Y. Andrew; Wang, Liya; Zhang, Minming; Mao, Hui

2009-01-01

We report a biocompatible polysiloxane containing amphiphilic diblock copolymer, poly(ethylene oxide)-block-poly(γ-methacryloxypropyltrimethoxysilane) (PEO-b-PγMPS), for coating and stabilizing nanoparticles for biomedical applications. Such amphiphilic diblock copolymer which comprises both a hydrophobic segment with “surface anchoring moiety” (silane group) and a hydrophilic segment with PEO (Mn=5000 g/mol) was obtained by the reversible addition fragmentation chain transfer (RAFT) polymerization using the PEO macromolecular chain transfer agent. When used for coating paramagnetic iron oxide nanoparticles (IONPs), copolymers were mixed with hydrophobic oleic acid coated core size uniformed IONPs (D=13 nm) in co-solvent tetrahydrofuran. After being aged over a period of time, resulting monodispersed IONPs can be transferred into aqueous medium. With proper PγMPS block length (Mn=10,000 g/mol), polysiloxane containing diblock copolymers formed a thin layer of coating (~3 nm) around monocrystalline nanoparticles as measured by transmission electron microscopy (TEM). Magnetic resonance imaging (MRI) experiments showed excellent T2 weighted contrast effect from coated IONPs with a transverse relaxivity r2=98.6 mM−1s−1 (at 1.5 Tesla). Such thin coating layer has little effect on the relaxivity when compared to that of IONPs coated with conventional amphiphilic copolymer. Polysiloxane containing diblock copolymer coated IONPs are stable without aggregation or binding to proteins in serum when incubated for 24 h in culture medium containing 10% serum. Furthermore, much lower level of intracellular uptake by macrophage cells was observed with polysiloxane containing diblock copolymers coated IONPs, suggesting the reduction of non-specific cell uptakes and antibiofouling effect. PMID:20161520

Well-Defined Nanostructured, Single-Crystalline TiO2 Electron Transport Layer for Efficient Planar Perovskite Solar Cells.

PubMed

Choi, Jongmin; Song, Seulki; Hörantner, Maximilian T; Snaith, Henry J; Park, Taiho

2016-06-28

An electron transporting layer (ETL) plays an important role in extracting electrons from a perovskite layer and blocking recombination between electrons in the fluorine-doped tin oxide (FTO) and holes in the perovskite layers, especially in planar perovskite solar cells. Dense TiO2 ETLs prepared by a solution-processed spin-coating method (S-TiO2) are mainly used in devices due to their ease of fabrication. Herein, we found that fatal morphological defects at the S-TiO2 interface due to a rough FTO surface, including an irregular film thickness, discontinuous areas, and poor physical contact between the S-TiO2 and the FTO layers, were inevitable and lowered the charge transport properties through the planar perovskite solar cells. The effects of the morphological defects were mitigated in this work using a TiO2 ETL produced from sputtering and anodization. This method produced a well-defined nanostructured TiO2 ETL with an excellent transmittance, single-crystalline properties, a uniform film thickness, a large effective area, and defect-free physical contact with a rough substrate that provided outstanding electron extraction and hole blocking in a planar perovskite solar cell. In planar perovskite devices, anodized TiO2 ETL (A-TiO2) increased the power conversion efficiency by 22% (from 12.5 to 15.2%), and the stabilized maximum power output efficiency increased by 44% (from 8.9 to 12.8%) compared with S-TiO2. This work highlights the importance of the ETL geometry for maximizing device performance and provides insights into achieving ideal ETL morphologies that remedy the drawbacks observed in conventional spin-coated ETLs.

High-efficiency non-blocking phosphorescent organic light emitting diode with ultrathin emission layer

NASA Astrophysics Data System (ADS)

Qiu, Jacky; Helander, Michael G.; Wang, Zhibin; Chang, Yi-Lu; Lu, ZhengHong

2012-09-01

Non-blocking Phosphorescent Organic Light Emitting Diode (NB-PHOLED) is a highly simplified device structure that has achieved record high device performance on chlorinated ITO[1], flexible substrates[2], also with Pt based phosphorescent dopants[3] and NB-PHOLED has significantly reduced efficiency roll-off[4]. The principle novel features of NB-PHOLED is the absence of blocking layer in the OLED stack, as well as the absence of organic hole injection layer, this allows for reduction of carrier accumulation in between organic layers and result in higher efficiencies.

Structure for HTS composite conductors and the manufacture of same

DOEpatents

Cotton, J.D.; Riley, G.N. Jr.

1999-06-01

A superconducting oxide composite structure including a superconducting oxide member, a metal layer surrounding the superconducting oxide member, and an insulating layer of a complex oxide formed in situ adjacent to the superconducting oxide member and the metal layer is provided together with a method of forming such a superconducting oxide composite structure including encapsulating a superconducting oxide member or precursor within a metal matrix layer from the group of: (1) a reactive metal sheath adjacent to the superconducting oxide member or precursor, the reactive metal sheath surrounded by a second metal layer or (2) an alloy containing a reactive metal; to form an intermediate product, and, heating the intermediate product at temperatures and for time sufficient to form an insulating layer of a complex oxide in situ, the insulating layer to the superconducting oxide member or precursor and the metal matrix layer. 10 figs.

Structure for hts composite conductors and the manufacture of same

DOEpatents

Cotton, James D.; Riley, Jr., Gilbert Neal

1999-01-01

A superconducting oxide composite structure including a superconducting oxide member, a metal layer surrounding the superconducting oxide member, and an insulating layer of a complex oxide formed in situ adjacent to the superconducting oxide member and the metal layer is provided together with a method of forming such a superconducting oxide composite structure including encapsulating a superconducting oxide member or precursor within a metal matrix layer from the group of: (i) a reactive metal sheath adjacent to the superconducting oxide member or precursor, the reactive metal sheath surrounded by a second metal layer or (ii) an alloy containing a reactive metal; to form an intermediate product, and, heating the intermediate product at temperatures and for time sufficient to form an insulating layer of a complex oxide in situ, the insulating layer to the superconducting oxide member or precursor and the metal matrix layer.

Buffer layers on metal alloy substrates for superconducting tapes

DOEpatents

Jia, Quanxi; Foltyn, Stephen R.; Arendt, Paul N.; Groves, James R.

2004-06-29

An article including a substrate, a layer of an inert oxide material upon the surface of the substrate, a layer of an amorphous oxide or oxynitride material upon the inert oxide material layer, a layer of an oriented cubic oxide material having a rock-salt-like structure upon the amorphous oxide material layer, and a layer of a SrRuO.sub.3 buffer material upon the oriented cubic oxide material layer is provided together with additional layers such as a HTS top-layer of YBCO directly upon the layer of a SrRuO.sub.3 buffer material layer. With a HTS top-layer of YBCO upon at least one layer of the SrRuO.sub.3 buffer material in such an article, J.sub.c 's of up to 1.3.times.10.sup.6 A/cm.sup.2 have been demonstrated with projected IC's of over 200 Amperes across a sample 1 cm wide.

A Prototype Ice-Melting Probe for Collecting Biological Samples from Cryogenic Ice at Low Pressure

NASA Astrophysics Data System (ADS)

Davis, Ashley

2017-08-01

In the Solar System, the surface of an icy moon is composed of irregular ice formations at cryogenic temperatures (<200 K), with an oxidized surface layer and a tenuous atmosphere at very low pressure (<10-6 atm). A lander mission, whose aim is to collect and analyze biological samples from the surface ice, must contain a device that collects samples without refreezing liquid and without sublimation of ice. In addition, if the samples are biological in nature, then precautions must be taken to ensure the samples do not overheat or mix with the oxidized layer. To achieve these conditions, the collector must maintain temperatures close to maintenance or growth conditions of the organism (<293 K), and it must separate or neutralize the oxidized layer and be physically gentle. Here, we describe a device that addresses these requirements and is compatible with low atmospheric pressure while using no pumps. The device contains a heated conical probe with a central orifice, which is forced into surface ice and directs the meltwater upward into a reservoir. The force on the probe is proportional to the height of meltwater (pressure) obtained in the system and allows regulation of the melt rate and temperature of the sample. The device can collect 5-50 mL of meltwater from the surface of an ice block at 233-208 K with an environmental pressure of less than 10-2 atm while maintaining a sample temperature between 273 and 293 K. These conditions maintain most biological samples in a pristine state and maintain the integrity of most organisms' structure and function.

A water-processable organic electron-selective layer for solution-processed inverted organic solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen, Dongcheng; Zhou, Hu; Cai, Ping

2014-02-03

A triazine- and pyridinium-containing water-soluble material of 1,1′,1″-(4,4′,4″-(1,3,5-triazine-2,4,6-triyl)tris(benzene-4,1-diyl)) tris(methylene)tripyridinium bromide (TzPyBr) was developed as an organic electron-selective layer in solution-processed inverted organic solar cells due to its strong anti-erosion capacity against non-polar organic solvents commonly used for the active layer. Ohmic-like contact with the adjacent active materials like fullerene derivatives is speculated to be formed, as confirmed by the work-function measurements with scanning Kelvin probe and ultraviolet photoelectron spectroscopy techniques. Besides, considering the deep highest occupied molecular orbital energy level of TzPyBr, excellent hole-blocking property of the electron-selective layer is also anticipated. The inverted organic photovoltaic devices based on themore » TzPyBr/ITO (indium tin oxide) bilayer cathode exhibit dramatically enhanced performance compared to the control devices with bare ITO as the cathode and even higher efficiency than the conventional type devices with ITO and Al as the electrodes.« less

Quasi-Steady Evolution of Hillslopes in Layered Landscapes: An Analytic Approach

NASA Astrophysics Data System (ADS)

Glade, R. C.; Anderson, R. S.

2018-01-01

Landscapes developed in layered sedimentary or igneous rocks are common on Earth, as well as on other planets. Features such as hogbacks, exposed dikes, escarpments, and mesas exhibit resistant rock layers adjoining more erodible rock in tilted, vertical, or horizontal orientations. Hillslopes developed in the erodible rock are typically characterized by steep, linear-to-concave slopes or "ramps" mantled with material derived from the resistant layers, often in the form of large blocks. Previous work on hogbacks has shown that feedbacks between weathering and transport of the blocks and underlying soft rock can create relief over time and lead to the development of concave-up slope profiles in the absence of rilling processes. Here we employ an analytic approach, informed by numerical modeling and field data, to describe the quasi-steady state behavior of such rocky hillslopes for the full spectrum of resistant layer dip angles. We begin with a simple geometric analysis that relates structural dip to erosion rates. We then explore the mechanisms by which our numerical model of hogback evolution self-organizes to meet these geometric expectations, including adjustment of soil depth, erosion rates, and block velocities along the ramp. Analytical solutions relate easily measurable field quantities such as ramp length, slope, block size, and resistant layer dip angle to local incision rate, block velocity, and block weathering rate. These equations provide a framework for exploring the evolution of layered landscapes and pinpoint the processes for which we require a more thorough understanding to predict their evolution over time.

Semi-automatic spray pyrolysis deposition of thin, transparent, titania films as blocking layers for dye-sensitized and perovskite solar cells

PubMed Central

Krýsová, Hana; Kavan, Ladislav

2018-01-01

For proper function of the negative electrode of dye-sensitized and perovskite solar cells, the deposition of a nonporous blocking film is required on the surface of F-doped SnO2 (FTO) glass substrates. Such a blocking film can minimise undesirable parasitic processes, for example, the back reaction of photoinjected electrons with the oxidized form of the redox mediator or with the hole-transporting medium can be avoided. In the present work, thin, transparent, blocking TiO2 films are prepared by semi-automatic spray pyrolysis of precursors consisting of titanium diisopropoxide bis(acetylacetonate) as the main component. The variation in the layer thickness of the sprayed films is achieved by varying the number of spray cycles. The parameters investigated in this work were deposition temperature (150, 300 and 450 °C), number of spray cycles (20–200), precursor composition (with/without deliberately added acetylacetone), concentration (0.05 and 0.2 M) and subsequent post-calcination at 500 °C. The photo-electrochemical properties were evaluated in aqueous electrolyte solution under UV irradiation. The blocking properties were tested by cyclic voltammetry with a model redox probe with a simple one-electron-transfer reaction. Semi-automatic spraying resulted in the formation of transparent, homogeneous, TiO2 films, and the technique allows for easy upscaling to large electrode areas. The deposition temperature of 450 °C was necessary for the fabrication of highly photoactive TiO2 films. The blocking properties of the as-deposited TiO2 films (at 450 °C) were impaired by post-calcination at 500 °C, but this problem could be addressed by increasing the number of spray cycles. The modification of the precursor by adding acetylacetone resulted in the fabrication of TiO2 films exhibiting perfect blocking properties that were not influenced by post-calcination. These results will surely find use in the fabrication of large-scale dye-sensitized and perovskite solar cells. PMID:29719764

Method of making an electrode

DOEpatents

Isenberg, Arnold O.

1986-01-01

Disclosed is a method of coating an electrode on a solid oxygen conductive oxide layer. A coating of particles of an electronic conductor is formed on one surface of the oxide layer and a source of oxygen is applied to the opposite surface of the oxide layer. A metal halide vapor is applied over the electronic conductor and the oxide layer is heated to a temperature sufficient to induce oxygen to diffuse through the oxide layer and react with the metal halide vapor. This results in the growing of a metal oxide coating on the particles of electronic conductor, thereby binding them to the oxide layer.

Surface engineering with functional random copolymers for nanolithographic applications

NASA Astrophysics Data System (ADS)

Sparnacci, Katia; Antonioli, Diego; Gianotti, Valentina; Lupi, Federico Ferrarese; Giammaria, Tommaso Jacopo; Seguini, Gabriele; Perego, Michele; Laus, Michele

2016-05-01

Hydroxyl-terminated P(S-r-MMA) random copolymers with molecular weight ranging from 1.7 to 69 kg/mol and a styrene unit fraction of 61% were grafted onto a silicon oxide surface and subsequently used to study the orientation of domains with respect to the substrate, in cylinder-forming PS-b-PMMA block copolymer thin films. When the thickness (H) of the grafted layer is greater than 5-6 nm, a perpendicular orientation is always observed because of the efficient decoupling of the BCP film from the polar SiO2 surface. Conversely, if H is less than 5 nm, the critical thickness of the grafted layer, which allows the neutralization of the substrate and promotion of the perpendicular orientation of the nanodomains in the BCP film, is found to depend on the Mn of the RCP. In particular, when Mn = 1700, a 2.0 nm thick grafted layer is sufficient to promote the perpendicular orientation of the PMMA cylinders in the PS-b-PMMA BCP film.

Multifunctional MgO Layer in Perovskite Solar Cells.

PubMed

Guo, Xudong; Dong, Haopeng; Li, Wenzhe; Li, Nan; Wang, Liduo

2015-06-08

A multifunctional magnesium oxide (MgO) layer was successfully introduced into perovskite solar cells (PSCs) to enhance their performance. MgO was coated onto the surface of mesoporous TiO(2) by the decomposition of magnesium acetate and, therefore, could block contact between the perovskite and TiO(2). X-ray photoelectron spectroscopy and infrared spectroscopy showed that the amount of H(2)O/hydroxyl absorbed on the TiO(2) decreased after MgO modification. The UV/Vis absorption spectra of the perovskite with MgO modification revealed an enhanced photoelectric performance compared with that of unmodified perovskite after UV illumination. In addition to the photocurrent, the photovoltage and fill factor also showed an enhancement after modification, which resulted in an increase in the overall efficiency of the cell from 9.6 to 13.9 %. Electrochemical impedance spectroscopy (EIS) confirmed that MgO acts as an insulating layer to reduce charge recombination. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Geologic columns for the ICDP-USGS Eyreville A and B cores, Chesapeake Bay impact structure: Sediment-clast breccias, 1096 to 444 m depth

USGS Publications Warehouse

Edwards, L.E.; Powars, D.S.; Gohn, G.S.; Dypvik, H.

2009-01-01

The Eyreville A and B cores, recovered from the "moat" of the Chesapeake Bay impact structure, provide a thick section of sediment-clast breccias and minor stratified sediments from 1095.74 to 443.90 m. This paper discusses the components of these breccias, presents a geologic column and descriptive lithologic framework for them, and formalizes the Exmore Formation. From 1095.74 to ??867 m, the cores consist of nonmarine sediment boulders and sand (rare blocks up to 15.3 m intersected diameter). A sharp contact in both cores at ??867 m marks the lowest clayey, silty, glauconitic quartz sand that constitutes the base of the Exmore Formation and its lower diamicton member. Here, material derived from the upper sediment target layers, as well as some impact ejecta, occurs. The block-dominated member of the Exmore Formation, from ??855-618.23 m, consists of nonmarine sediment blocks and boulders (up to 45.5 m) that are juxtaposed complexly. Blocks of oxidized clay are an important component. Above 618.23 m, which is the base of the informal upper diamicton member of the Exmore Formation, the glauconitic matrix is a consistent component in diamicton layers between nonmarine sediment clasts that decrease in size upward in the section. Crystalline-rock clasts are not randomly distributed but rather form local concentrations. The upper part of the Exmore Formation consists of crudely fining-upward sandy packages capped by laminated silt and clay. The overlap interval of Eyreville A and B (940-??760 m) allows recognition of local similarities and differences in the breccias. ?? 2009 The Geological Society of America.

Solution processed ternary blend nano-composite charge regulation layer to enhance inverted OLED performances

NASA Astrophysics Data System (ADS)

Kaçar, Rifat; Mucur, Selin Pıravadılı; Yıldız, Fikret; Dabak, Salih; Tekin, Emine

2018-04-01

Inverted bottom-emission organic light emitting diodes (IBOLEDs) have attracted increasing attention due to their exceptional air stability and applications in active-matrix displays. For gaining high IBOLED device efficiencies, it is crucial to develop an effective strategy to make the bottom electrode easy for charge injection and transport. Charge selectivity, blocking the carrier flow towards the unfavourable side, plays an important role in determining charge carrier balance and accordingly radiative recombination efficiency. It is therefore highly desirable to functionalize an interfacial layer which will perform many different tasks simultaneously. Here, we contribute to the hole-blocking ability of the zinc oxide/polyethyleneimine (ZnO:PEI) nano-composite (NC) interlayer with the intention of increasing the OLED device efficiency. With this purpose in mind, a small amount of 1,3,5-tris(N-phenylbenzimidazol-2-yl)benzene (TPBi) was added as a hole-blocking molecule into the binary blend of ZnO and PEI solution. The device with a ternary ZnO:PEI:TPBi NC interlayer achieved a maximum current efficiency of 38.20 cd A-1 and a power efficiency of 34.29 lm W-1 with a luminance of 123 200 cd m-2, which are high performance parameters for inverted device architecture. The direct comparisons of device performances incorporating ZnO only, ZnO/PEI bilayers, and ZnO:PEI binary NC counterparts were also performed, which shed light on the origin of device performance enhancement.

Synthesis of Thermoresponsive Amphiphilic Polyurethane Gel as a New Cell Printing Material near Body Temperature.

PubMed

Tsai, Yi-Chun; Li, Suming; Hu, Shiaw-Guang; Chang, Wen-Chi; Jeng, U-Ser; Hsu, Shan-hui

2015-12-23

Waterborne polyurethane (PU) based on poly(ε-caprolactone) (PCL) diol and a second oligodiol containing amphiphilic blocks was synthesized in this study. The microstructure was characterized by dynamic light scattering (DLS), small-angle X-ray scattering (SAXS), and rheological measurement of the PU dispersion. The surface hydrophilicity measurement, infrared spectroscopy, wide-angle X-ray diffraction, mechanical and thermal analyses were conducted in solid state. It was observed that the presence of a small amount of amphiphilic blocks in the soft segment resulted in significant changes in microstructure. When 90 mol % PCL diol and 10 mol % amphiphilic blocks of poly(l-lactide)-poly(ethylene oxide) (PLLA-PEO) diol were used as the soft segment, the synthesized PU had a water contact angle of ∼24° and degree of crystallinity of ∼14%. The dispersion had a low viscosity below room temperature. As the temperature was raised to body temperature (37 °C), the dispersion rapidly (∼170 s) underwent sol-gel transition with excellent gel modulus (G' ≈ 6.5 kPa) in 20 min. PU dispersions with a solid content of 25-30% could be easily mixed with cells in sol state, extruded by a 3D printer, and deposited layer by layer as a gel. Cells remained alive and proliferating in the printed hydrogel scaffold. We expect that the development of novel thermoresponsive PU system can be used as smart injectable hydrogel and applied as a new type of bio-3D printing ink.

Synergetic effect of double-step blocking layer for the perovskite solar cell

NASA Astrophysics Data System (ADS)

Kim, Jinhyun; Hwang, Taehyun; Lee, Sangheon; Lee, Byungho; Kim, Jaewon; Kim, Jaewook; Gil, Bumjin; Park, Byungwoo

2017-10-01

In an organometallic CH3NH3PbI3 (MAPbI3) perovskite solar cell, we have demonstrated a vastly compact TiO2 layer synthesized by double-step deposition, through a combination of sputter and solution deposition to minimize the electron-hole recombination and boost the power conversion efficiency. As a result, the double-step strategy allowed outstanding transmittance of blocking layer. Additionally, crystallinity and morphology of the perovskite film were significantly modified, provoking enhanced photon absorption and solar cell performance with the reduced recombination rate. Thereby, this straightforward double-step strategy for the blocking layer exhibited 12.31% conversion efficiency through morphological improvements of each layer.

Carbonaceous cathode with enhanced wettability for aluminum production

DOEpatents

Keller, Rudolf; Gatty, David G.; Barca, Brian J.

2003-09-09

A method of preparing carbonaceous blocks or bodies for use in a cathode in an electrolytic cell for producing aluminum wherein the cell contains an electrolyte and has molten aluminum contacting the cathode, the cathode having improved wettability with molten aluminum. The method comprises the steps of providing a carbonaceous block and a boron oxide containing melt. The carbonaceous block is immersed in the melt and pressure is applied to the melt to impregnate the melt into pores in the block. Thereafter, the carbonaceous block is withdrawn from the melt, the block having boron oxide containing melt intruded into pores therein, the boron oxide capable of reacting with a source of titanium or zirconium or like metal to form titanium or zirconium diboride during heatup or operation of said cell.

Extrinsic germanium Blocked Impurity Bank (BIB) detectors

NASA Technical Reports Server (NTRS)

Krabach, Timothy N.; Huffman, James E.; Watson, Dan M.

1989-01-01

Ge:Ga blocked-impurity-band (BIB) detectors with long wavelength thresholds greater than 190 microns and peak quantum efficiencies of 4 percent, at an operating temperature of 1.8 K, have been fabricated. These proof of concept devices consist of a high purity germanium blocking layer epitaxially grown on a Ga-doped Ge substrate. This demonstration of BIB behavior in germanium enables the development of far infrared detector arrays similar to the current silicon-based devices. Present efforts are focussed on improving the chemical vapor deposition process used to create the blocking layer and on the lithographic processing required to produce monolithic detector arrays in germanium. Approaches to test the impurity levels in both the blocking and active layers are considered.

Cation deficient layered Ruddlesden-Popper-related oxysulfides La2LnMS2O5 (Ln=La, Y; M=Nb, Ta).

PubMed

Cario, Laurent; Popa, Aurelian Florin; Lafond, Alain; Guillot-Deudon, Catherine; Kabbour, Houria; Meerschaut, A; Clarke, Simon J; Adamson, Paul

2007-11-12

The structures of the new oxysulfide Ruddlesden-Popper phases La2LnMS2O5 (Ln=La, Y; M=Nb, Ta) are reported together with an iodide-containing variant: La3-xNb1+xS2O5I2x (0

I-V curve hysteresis induced by gate-free charging of GaAs nanowires' surface oxide

NASA Astrophysics Data System (ADS)

Alekseev, P. A.; Geydt, P.; Dunaevskiy, M. S.; Lähderanta, E.; Haggrén, T.; Kakko, J.-P.; Lipsanen, H.

2017-09-01

The control of nanowire-based device performance requires knowledge about the transport of charge carriers and its limiting factors. We present the experimental and modeled results of a study of electrical properties of GaAs nanowires (NWs), considering their native oxide cover. Measurements of individual vertical NWs were performed by conductive atomic force microscopy (C-AFM). Experimental C-AFM observations with numerical simulations revealed the complex resistive behavior of NWs. A hysteresis of current-voltage characteristics of the p-doped NWs as-grown on substrates with different types of doping was registered. The emergence of hysteresis was explained by the trapping of majority carriers in the surface oxide layer near the reverse-biased barriers under the source-drain current. It was found that the accumulation of charge increases the current for highly doped p+-NWs on n+-substrates, while for moderately doped p-NWs on p+-substrates, charge accumulation decreases the current due to blocking of the conductive channel of NWs.

Improved interfacial and electrical properties of GaAs metal-oxide-semiconductor capacitors with HfTiON as gate dielectric and TaON as passivation interlayer

NASA Astrophysics Data System (ADS)

Wang, L. S.; Xu, J. P.; Zhu, S. Y.; Huang, Y.; Lai, P. T.

2013-08-01

The interfacial and electrical properties of sputtered HfTiON on sulfur-passivated GaAs with or without TaON as interfacial passivation layer (IPL) are investigated. Experimental results show that the GaAs metal-oxide-semiconductor capacitor with HfTiON/TaON stacked gate dielectric annealed at 600 °C exhibits low interface-state density (1.0 × 1012 cm-2 eV-1), small gate leakage current (7.3 × 10-5 A cm-2 at Vg = Vfb + 1 V), small capacitance equivalent thickness (1.65 nm), and large equivalent dielectric constant (26.2). The involved mechanisms lie in the fact that the TaON IPL can effectively block the diffusions of Hf, Ti, and O towards GaAs surface and suppress the formation of interfacial As-As bonds, Ga-/As-oxides, thus unpinning the Femi level at the TaON/GaAs interface and improving the interface quality and electrical properties of the device.

Effect of nitrous oxide on the efficacy of the inferior alveolar nerve block in patients with symptomatic irreversible pulpitis.

PubMed

Stanley, William; Drum, Melissa; Nusstein, John; Reader, Al; Beck, Mike

2012-05-01

The inferior alveolar nerve (IAN) block does not always result in successful pulpal anesthesia. Anesthetic success rates might be affected by increased anxiety. Nitrous oxide has been shown to have both anxiolytic and analgesic properties. Therefore, the purpose of this prospective, randomized, double-blind, placebo-controlled study was to determine the effect of nitrous oxide on the anesthetic success of the IAN block in patients experiencing symptomatic irreversible pulpitis. One hundred emergency patients diagnosed with symptomatic irreversible pulpitis of a mandibular posterior tooth were enrolled in this study. Each patient was randomly assigned to receive an inhalation regimen of nitrous oxide/oxygen mix or room air/oxygen mix (placebo) 5 minutes before the administration of the IAN block. Endodontic access was begun 15 minutes after completion of the IAN block, and all patients had profound lip numbness. Success was defined as no or mild pain (visual analog scale recordings) on access or instrumentation. The success rate for the IAN block was 50% for the nitrous oxide group and 28% for the placebo group. There was a statistically significant difference between the 2 groups (P = .024). For mandibular teeth diagnosed with symptomatic irreversible pulpitis, administration of 30%-50% nitrous oxide resulted in a statistically significant increase in the success of the IAN block compared with room air/oxygen. Copyright © 2012 American Association of Endodontists. Published by Elsevier Inc. All rights reserved.

Synthesis and morphology of hydroxyapatite/polyethylene oxide nanocomposites with block copolymer compatibilized interfaces

NASA Astrophysics Data System (ADS)

Lee, Ji Hoon; Shofner, Meisha

2012-02-01

In order to exploit the promise of polymer nanocomposites, special consideration should be given to component interfaces during synthesis and processing. Previous results from this group have shown that nanoparticles clustered into larger structures consistent with their native shape when the polymer matrix crystallinity was high. Therefore in this research, the nanoparticles are disguised from a highly-crystalline polymer matrix by cloaking them with a matrix-compatible block copolymer. Specifically, spherical and needle-shaped hydroxyapatite nanoparticles were synthesized using a block copolymer templating method. The block copolymer used, polyethylene oxide-b-polymethacrylic acid, remained on the nanoparticle surface following synthesis with the polyethylene oxide block exposed. These nanoparticles were subsequently added to a polyethylene oxide matrix using solution processing. Characterization of the nanocomposites indicated that the copolymer coating prevented the nanoparticles from assembling into ordered clusters and that the matrix crystallinity was decreased at a nanoparticle spacing of approximately 100 nm.

Thermoelectric material including conformal oxide layers and method of making the same using atomic layer deposition

DOEpatents

Cho, Jung Young; Ahn, Dongjoon; Salvador, James R.; Meisner, Gregory P.

2016-06-07

A thermoelectric material includes a substrate particle and a plurality of conformal oxide layers formed on the substrate particle. The plurality of conformal oxide layers has a total oxide layer thickness ranging from about 2 nm to about 20 nm. The thermoelectric material excludes oxide nanoparticles. A method of making the thermoelectric material is also disclosed herein.

Improve oxidation resistance at high temperature by nanocrystalline surface layer

NASA Astrophysics Data System (ADS)

Xia, Z. X.; Zhang, C.; Huang, X. F.; Liu, W. B.; Yang, Z. G.

2015-08-01

An interesting change of scale sequence occurred during oxidation of nanocrystalline surface layer by means of a surface mechanical attrition treatment. The three-layer oxide structure from the surface towards the matrix is Fe3O4, spinel FeCr2O4 and corundum (Fe,Cr)2O3, which is different from the typical two-layer scale consisted of an Fe3O4 outer layer and an FeCr2O4 inner layer in conventional P91 steel. The diffusivity of Cr, Fe and O is enhanced concurrently in the nanocrystalline surface layer, which causes the fast oxidation in the initial oxidation stage. The formation of (Fe,Cr)2O3 inner layer would inhabit fast diffusion of alloy elements in the nanocrystalline surface layer of P91 steel in the later oxidation stage, and it causes a decrease in the parabolic oxidation rate compared with conventional specimens. This study provides a novel approach to improve the oxidation resistance of heat resistant steel without changing its Cr content.

Molten metal holder furnace and casting system incorporating the molten metal holder furnace

DOEpatents

Kinosz, Michael J.; Meyer, Thomas N.

2003-02-11

A bottom heated holder furnace (12) for containing a supply of molten metal includes a storage vessel (30) having sidewalls (32) and a bottom wall (34) defining a molten metal receiving chamber (36). A furnace insulating layer (42) lines the molten metal receiving chamber (36). A thermally conductive heat exchanger block (54) is located at the bottom of the molten metal receiving chamber (36) for heating the supply of molten metal. The heat exchanger block (54) includes a bottom face (65), side faces (66), and a top face (67). The heat exchanger block (54) includes a plurality of electrical heaters (70) extending therein and projecting outward from at least one of the faces of the heat exchanger block (54), and further extending through the furnace insulating layer (42) and one of the sidewalls (32) of the storage vessel (30) for connection to a source of electrical power. A sealing layer (50) covers the bottom face (65) and side faces (66) of the heat exchanger block (54) such that the heat exchanger block (54) is substantially separated from contact with the furnace insulating layer (42).

Method for fabricating solar cells having integrated collector grids

NASA Technical Reports Server (NTRS)

Evans, J. C., Jr. (Inventor)

1979-01-01

A heterojunction or Schottky barrier photovoltaic device comprising a conductive base metal layer compatible with and coating predominately the exposed surface of the p-type substrate of the device such that a back surface field region is formed at the interface between the device and the base metal layer, a transparent, conductive mixed metal oxide layer in integral contact with the n-type layer of the heterojunction or Schottky barrier device having a metal alloy grid network of the same metal elements of the oxide constituents of the mixed metal oxide layer embedded in the mixed metal oxide layer, an insulating layer which prevents electrical contact between the conductive metal base layer and the transparent, conductive metal oxide layer, and a metal contact means covering the insulating layer and in intimate contact with the metal grid network embedded in the transparent, conductive oxide layer for conducting electrons generated by the photovoltaic process from the device.

Investigation of sacrificial layer and building block for layered nanofabrication (LNF)

NASA Astrophysics Data System (ADS)

Shih, Ting-Yu

Layered Nanoscale Fabrication (LNF) is a "bottom-up" procedure that uses multiple layers to build 3-dimensional nanoscale structures. Here, in this dissertation, several candidates for sacrificial layers were explored, The thermal stability of gold nanoparticles and simple patterns are also reported. In order to obtain information on layer thickness and film quality; the samples were characterized using atomic force microscopy (AFM) and ellipsometry. Octadecyltrichlorosilane (OTS) was first investigated for use as a sacrificial layer and we studied filth growth by targeted self-replication of silane multilayers with and without the presence of thiolated gold nanoparticles on silicon oxide substrates. The particles adhered to the substrate during layer grafting. The film grew selectively on the substrate, without covering the particles. AFM was used to investigate the growth mechanism and the process of embedding the nanoparticles. OTS multilayer films up to 9 layers were grown in a linear, bilayer-by bilayer mode, free of islands and defects. We also report on studies of monolayer and multilayer formation of Methyl-11-dimethylmonochlorosilyl-undecanoate films. Flat multilayers up to 3-layers thick were grown. AFM was used to measure the height of an observable "edge" of the multilayer film and this provides and independent determination of the MOSUD layer height of 1.5 nm: However, the particles detached from the surface when we attempted to grow multilayer. One strategy of linking the particles to form 2D arrays, thermal activation in ambient air, was investigated. The morphological properties of flaked nanoparticles and structures on silicon oxide substrates before and after heating were characterized by using AFM. For widely separated 5 nm gold nanoparticles height decreased over 50% at 600 °C. Further heating to 630 °C caused most particles to completely disappear, with small amount of particle residue left on the surface. Particles positioned near to other particles first formed a neck-like structure at 570 °C and then deformed into one wide particle with tail-shape residue at 650 °C. Clusters of Au nanoparticles rearranged and became one large collide with particles residues left on the surface at 630 °C.

Method of adhesion between an oxide layer and a metal layer

DOEpatents

Jennison, Dwight R.; Bogicevic, Alexander; Kelber, Jeffry A.; Chambers, Scott A.

2004-09-14

A method of controlling the wetting characteristics and increasing the adhesion between a metal and an oxide layer. By introducing a negatively-charged species to the surface of an oxide layer, layer-by-layer growth of metal deposited onto the oxide surface is promoted, increasing the adhesion strength of the metal-oxide interface. The negatively-charged species can either be deposited onto the oxide surface or a compound can be deposited that dissociates on, or reacts with, the surface to form the negatively-charged species. The deposited metal adatoms can thereby bond laterally to the negatively-charged species as well as vertically to the oxide surface as well as react with the negatively charged species, be oxidized, and incorporated on or into the surface of the oxide.

Effect of thin oxide layers incorporated in spin valve structures

NASA Astrophysics Data System (ADS)

Gillies, M. F.; Kuiper, A. E. T.; Leibbrandt, G. W. R.

2001-06-01

The enhancement of the magnetoresistance effect, induced by incorporating nano-oxide layers (NOLs) in a bottom-type spin valve, was studied for various preparation conditions. The effect of a NOL in the Co90Fe10 pinned layer was found to depend critically on the oxygen pressure applied to form the thin oxide film. Pressures over 10-3 Torr O2 yield oxides thicker than about 0.7 nm, which apparently deteriorate the biasing field which exists over the oxide. The magnetoresistance values can further be raised by forming a specular reflecting oxide on top of the sense layer. Promising results were obtained with an Al2O3 capping layer formed in a solid-state oxidation reaction that occurs spontaneously when a thin Al layer is deposited on the oxidized surface of the Co90Fe10 sense layer.

Highly reliable top-gated thin-film transistor memory with semiconducting, tunneling, charge-trapping, and blocking layers all of flexible polymers.

PubMed

Wang, Wei; Hwang, Sun Kak; Kim, Kang Lib; Lee, Ju Han; Cho, Suk Man; Park, Cheolmin

2015-05-27

The core components of a floating-gate organic thin-film transistor nonvolatile memory (OTFT-NVM) include the semiconducting channel layer, tunneling layer, floating-gate layer, and blocking layer, besides three terminal electrodes. In this study, we demonstrated OTFT-NVMs with all four constituent layers made of polymers based on consecutive spin-coating. Ambipolar charges injected and trapped in a polymer electret charge-controlling layer upon gate program and erase field successfully allowed for reliable bistable channel current levels at zero gate voltage. We have observed that the memory performance, in particular the reliability of a device, significantly depends upon the thickness of both blocking and tunneling layers, and with an optimized layer thickness and materials selection, our device exhibits a memory window of 15.4 V, on/off current ratio of 2 × 10(4), read and write endurance cycles over 100, and time-dependent data retention of 10(8) s, even when fabricated on a mechanically flexible plastic substrate.

Atomic Layer Deposition of TiO2 for a High-Efficiency Hole-Blocking Layer in Hole-Conductor-Free Perovskite Solar Cells Processed in Ambient Air.

PubMed

Hu, Hang; Dong, Binghai; Hu, Huating; Chen, Fengxiang; Kong, Mengqin; Zhang, Qiuping; Luo, Tianyue; Zhao, Li; Guo, Zhiguang; Li, Jing; Xu, Zuxun; Wang, Shimin; Eder, Dominik; Wan, Li

2016-07-20

In this study we design and construct high-efficiency, low-cost, highly stable, hole-conductor-free, solid-state perovskite solar cells, with TiO2 as the electron transport layer (ETL) and carbon as the hole collection layer, in ambient air. First, uniform, pinhole-free TiO2 films of various thicknesses were deposited on fluorine-doped tin oxide (FTO) electrodes by atomic layer deposition (ALD) technology. Based on these TiO2 films, a series of hole-conductor-free perovskite solar cells (PSCs) with carbon as the counter electrode were fabricated in ambient air, and the effect of thickness of TiO2 compact film on the device performance was investigated in detail. It was found that the performance of PSCs depends on the thickness of the compact layer due to the difference in surface roughness, transmittance, charge transport resistance, electron-hole recombination rate, and the charge lifetime. The best-performance devices based on optimized TiO2 compact film (by 2000 cycles ALD) can achieve power conversion efficiencies (PCEs) of as high as 7.82%. Furthermore, they can maintain over 96% of their initial PCE after 651 h (about 1 month) storage in ambient air, thus exhibiting excellent long-term stability.

Interfacial Materials for Organic Solar Cells: Recent Advances and Perspectives

PubMed Central

Yin, Zhigang; Wei, Jiajun

2016-01-01

Organic solar cells (OSCs) have shown great promise as low‐cost photovoltaic devices for solar energy conversion over the past decade. Interfacial engineering provides a powerful strategy to enhance efficiency and stability of OSCs. With the rapid advances of interface layer materials and active layer materials, power conversion efficiencies (PCEs) of both single‐junction and tandem OSCs have exceeded a landmark value of 10%. This review summarizes the latest advances in interfacial layers for single‐junction and tandem OSCs. Electron or hole transporting materials, including metal oxides, polymers/small‐molecules, metals and metal salts/complexes, carbon‐based materials, organic‐inorganic hybrids/composites, and other emerging materials, are systemically presented as cathode and anode interface layers for high performance OSCs. Meanwhile, incorporating these electron‐transporting and hole‐transporting layer materials as building blocks, a variety of interconnecting layers for conventional or inverted tandem OSCs are comprehensively discussed, along with their functions to bridge the difference between adjacent subcells. By analyzing the structure–property relationships of various interfacial materials, the important design rules for such materials towards high efficiency and stable OSCs are highlighted. Finally, we present a brief summary as well as some perspectives to help researchers understand the current challenges and opportunities in this emerging area of research. PMID:27812480

Organimetallic Fluorescent Complex Polymers For Light Emitting Applications

DOEpatents

Shi, Song Q.; So, Franky

1997-10-28

A fluorescent complex polymer with fluorescent organometallic complexes connected by organic chain spacers is utilized in the fabrication of light emitting devices on a substantially transparent planar substrate by depositing a first conductive layer having p-type conductivity on the planar surface of the substrate, depositing a layer of a hole transporting and electron blocking material on the first conductive layer, depositing a layer of the fluorescent complex polymer on the layer of hole transporting and electron blocking material as an electron transporting emissive layer and depositing a second conductive layer having n-type conductivity on the layer of fluorescent complex polymer.

Biquadratic coupling through nano-oxide layers in pinned layers of IrMn-based spin valves

NASA Astrophysics Data System (ADS)

Lai, Chih-Huang; Lu, K. H.

2003-05-01

We have investigated the coupling between top and bottom pinned layers through various nano-oxide layers (NOLs) in IrMn-based spin valves. The NOLs were formed by using oxygen-plasma oxidation or natural oxidation on 1 nm metallic layers. By inserting naturally oxidized Co-NOLs in the pinned layer, strong ferromagnetic coupling through NOLs and high specularity at the NOL interface were achieved. In contrast, when the plasma-oxidized Co-NOLs were inserted, ferromagnetic coupling through NOLs disappeared, plausibly due to the formation of nonferromagnetic oxides, which led to a low magnetoresistance (MR). Insertion of naturally oxidized Ni80Fe20-NOLs showed the same results as that of naturally oxidized Co-NOLs. On the other hand, biquadratic coupling between top and bottom pinned-Co90Fe10 layers was observed by inserting plasma-oxidized Ni80Fe20-NOLs. The highest MR was obtained when the field was applied along the direction perpendicular to the field-annealing direction. Similar biquadratic coupling was also found with naturally oxidized or plasma-oxidized Fe-NOLs. We suggest that the biquadratic coupling between pinned Co90Fe10 layers through NOLs results from the coupling between Fe (or Co90Fe10) and Fe+3 oxides

Improved fill factor in inverted planar perovskite solar cells with zirconium acetate as the hole-and-ion-blocking layer.

PubMed

Zhang, Xuewen; Liang, Chunjun; Sun, Mengjie; Zhang, Huimin; Ji, Chao; Guo, Zebang; Xu, Yajun; Sun, Fulin; Song, Qi; He, Zhiqun

2018-03-14

Planar perovskite solar cells (PSCs) have gained great interest due to their low-temperature solution preparation and simple process. In inverted planar PSCs, an additional buffer layer is usually needed on the top of the PCBM electron-transport layer (ETL) to enhance the device performance. In this work, we used a new buffer layer, zirconium acetate (Zr(Ac) 4 ). The inclusion of the Zr(Ac) 4 buffer layer leads to the increase of FF from ∼68% to ∼79% and PCE from ∼14% to ∼17% in the planar PSCs. The UPS measurement indicates that the Zr(Ac) 4 layer has a low HOMO level of -8.2 eV, indicating that the buffer layer can act as a hole-blocking layer. Surface morphology and surface chemistry investigations reveal that the elements I, MA and Pb can diffuse across the PCBM ETL, damaging the device performance. The covering Zr(Ac) 4 molecules fill in the pinholes of the PCBM layer and effectively block the ions/molecules of the perovskite from diffusion across the ETL. The resulting more robust PCBM/Zr(Ac) 4 ETL leads to weaker ionic charge accumulation and lower diode leakage current. The double role of hole-and-ion blocking of the Zr(Ac) 4 layer explains the improved FF and PCE in the PSCs.

Enhancement of Photovoltaic Performance by Utilizing Readily Accessible Hole Transporting Layer of Vanadium(V) Oxide Hydrate in a Polymer-Fullerene Blend Solar Cell.

PubMed

Jiang, Youyu; Xiao, Shengqiang; Xu, Biao; Zhan, Chun; Mai, Liqiang; Lu, Xinhui; You, Wei

2016-05-11

Herein, a successful application of V2O5·nH2O film as hole transporting layer (HTL) instead of PSS in polymer solar cells is demonstrated. The V2O5·nH2O layer was spin-coated from V2O5·nH2O sol made from melting-quenching sol-gel method by directly using vanadium oxide powder, which is readily accessible and cost-effective. V2O5·nH2O (n ≈ 1) HTL is found to have comparable work function and smooth surface to that of PSS. For the solar cell containing V2O5·nH2O HTL and the active layer of the blend of a novel polymer donor (PBDSe-DT2PyT) and the acceptor of PC71BM, the PCE was significantly improved to 5.87% with a 30% increase over 4.55% attained with PSS HTL. Incorporation of V2O5·nH2O as HTL in the polymer solar cell was found to enhance the crystallinity of the active layer, electron-blocking at the anode and the light-harvest in the wavelength range of 400-550 nm in the cell. V2O5·nH2O HTL improves the charge generation and collection and suppress the charge recombination within the PBDSe-DT2PyT:PC71BM solar cell, leading to a simultaneous enhancement in Voc, Jsc, and FF. The V2O5·nH2O HTL proposed in this work is envisioned to be of great potential to fabricate highly efficient PSCs with low-cost and massive production.

Solvothermal one-step synthesis of Ni-Al layered double hydroxide/carbon nanotube/reduced graphene oxide sheet ternary nanocomposite with ultrahigh capacitance for supercapacitors.

PubMed

Yang, Wanlu; Gao, Zan; Wang, Jun; Ma, Jing; Zhang, Milin; Liu, Lianhe

2013-06-26

A Ni-Al layered double hydroxide (LDH), mutil-wall carbon nanotube (CNT), and reduced graphene oxide sheet (GNS) ternary nanocomposite electrode material has been developed by a facile one-step ethanol solvothermal method. The obtained LDH/CNT/GNS composite displayed a three-dimensional (3D) architecture with flowerlike Ni-Al LDH/CNT nanocrystallites gradually self-assembled on GNS nanosheets. GNS was used as building blocks to construct 3D nanostructure, and the LDH/CNT nanoflowers in turn separated the two-dimensional (2D) GNS sheets, which preserved the high surface area of GNSs. Furthermore, the generated porous networks with a narrow pore size distribution in the LDH/CNT/GNS composite were also demonstrated by the N2 adsorption/desorption experiment. Such morphology would be favorable to improve the mass transfer and electrochemical action of the electrode. As supercapacitor electrode material, the LDH/CNT/GNS hybrid exhibited excellent electrochemical performance, including ultrahigh specific capacitance (1562 F/g at 5 mA/cm(2)), excellent rate capability, and long-term cycling performance, which could be a promising energy storage/conversion material for supercapacitor application.

Enhanced photovoltaic properties in dye sensitized solar cells by surface treatment of SnO2 photoanodes

PubMed Central

Basu, Kaustubh; Benetti, Daniele; Zhao, Haiguang; Jin, Lei; Vetrone, Fiorenzo; Vomiero, Alberto; Rosei, Federico

2016-01-01

We report the fabrication and testing of dye sensitized solar cells (DSSC) based on tin oxide (SnO2) particles of average size ~20 nm. Fluorine-doped tin oxide (FTO) conducting glass substrates were treated with TiOx or TiCl4 precursor solutions to create a blocking layer before tape casting the SnO2 mesoporous anode. In addition, SnO2 photoelectrodes were treated with the same precursor solutions to deposit a TiO2 passivating layer covering the SnO2 particles. We found that the modification enhances the short circuit current, open-circuit voltage and fill factor, leading to nearly 2-fold increase in power conversion efficiency, from 1.48% without any treatment, to 2.85% achieved with TiCl4 treatment. The superior photovoltaic performance of the DSSCs assembled with modified photoanode is attributed to enhanced electron lifetime and suppression of electron recombination to the electrolyte, as confirmed by electrochemical impedance spectroscopy (EIS) carried out under dark condition. These results indicate that modification of the FTO and SnO2 anode by titania can play a major role in maximizing the photo conversion efficiency. PMID:26988622

CoFe 2O 4 spinel protection coating thermally converted from the electroplated Co-Fe alloy for solid oxide fuel cell interconnect application

NASA Astrophysics Data System (ADS)

Bi, Z. H.; Zhu, J. H.; Batey, J. L.

CoFe 2O 4 has been demonstrated as a potential spinel coating for protecting the Cr-containing ferritic interconnects. This spinel had an electrical conductivity of 0.85 S cm -1 at 800 °C in air and an average coefficient of thermal expansion (CTE) of 11.80 × 10 -6 K -1 from room temperature to 800 °C. A series of Co-Fe alloys were co-deposited onto the Crofer 22 APU ferritic steel via electroplating with an acidic chloride solution. After thermal oxidation in air at 800 °C, a CoFe 2O 4 spinel layer was attained from the plated Co 0.40Fe 0.60 film. Furthermore, a channeled Crofer 22 APU interconnect electrodeposited with a 40-μm Co 0.40Fe 0.60 alloy film as a protective coating was evaluated in a single-cell configuration. The presence of the dense, Cr-free CoFe 2O 4 spinel layer was effective in blocking the Cr migration/transport and thus contributed to the improvement in cell performance stability.

Electronic Activation of a DNA Nanodevice Using a Multilayer Nanofilm.

PubMed

Jeong, Hyejoong; Ranallo, Simona; Rossetti, Marianna; Heo, Jiwoong; Shin, Jooseok; Park, Kwangyong; Ricci, Francesco; Hong, Jinkee

2016-10-01

A method to control activation of a DNA nanodevice by supplying a complementary DNA (cDNA) strand from an electro-responsive nanoplatform is reported. To develop functional nanoplatform, hexalayer nanofilm is precisely designed by layer-by-layer assembly technique based on electrostatic interaction with four kinds of materials: Hydrolyzed poly(β-amino ester) can help cDNA release from the film. A cDNA is used as a key building block to activate DNA nanodevice. Reduced graphene oxides (rGOs) and the conductive polymer provide conductivity. In particular, rGOs efficiently incorporate a cDNA in the film via several interactions and act as a barrier. Depending on the types of applied electronic stimuli (reductive and oxidative potentials), a cDNA released from the electrode can quantitatively control the activation of DNA nanodevice. From this report, a new system is successfully demonstrated to precisely control DNA release on demand. By applying more advanced form of DNA-based nanodevices into multilayer system, the electro-responsive nanoplatform will expand the availability of DNA nanotechnology allowing its improved application in areas such as diagnosis, biosensing, bioimaging, and drug delivery. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Three-dimensional crossbar arrays of self-rectifying Si/SiO 2/Si memristors

DOE PAGES

Li, Can; Han, Lili; Jiang, Hao; ...

2017-06-05

Memristors are promising building blocks for the next generation memory, unconventional computing systems and beyond. Currently common materials used to build memristors are not necessarily compatible with the silicon dominant complementary metal-oxide-semiconductor (CMOS) technology. Furthermore, external selector devices or circuits are usually required in order for large memristor arrays to function properly, resulting in increased circuit complexity. Here we demonstrate fully CMOS-compatible, all-silicon based and self-rectifying memristors that negate the need for external selectors in large arrays. It consists of p- and n-type doped single crystalline silicon electrodes and a thin chemically produced silicon oxide switching layer. The device exhibitsmore » repeatable resistance switching behavior with high rectifying ratio (10 5), high ON/OFF conductance ratio (10 4) and attractive retention at 300 °C. We further build a 5-layer 3-dimensional (3D) crossbar array of 100 nm memristors by stacking fluid supported silicon membranes. The CMOS compatibility and self-rectifying behavior open up opportunities for mass production of memristor arrays and 3D hybrid circuits on full-wafer scale silicon and flexible substrates without increasing circuit complexity.« less

PtRu nanoparticles embedded in nitrogen doped carbon with highly stable CO tolerance and durability

NASA Astrophysics Data System (ADS)

Ling, Ying; Yang, Zehui; Yang, Jun; Zhang, Yunfeng; Zhang, Quan; Yu, Xinxin; Cai, Weiwei

2018-02-01

As is well known, the lower durability and sluggish methanol oxidation reaction (MOR) of PtRu alloy electrocatalyst blocks the commercialization of direct methanol fuel cells (DMFCs). Here, we design a new PtRu electrocatalyst, with highly stable CO tolerance and durability, in which the PtRu nanoparticles are embedded in nitrogen doped carbon layers derived from carbonization of poly(vinyl pyrrolidone). The newly fabricated electrocatalyst exhibits no loss in electrochemical surface area (ECSA) and MOR activity after potential cycling from 0.6-1.0 V versus reversible hydrogen electrode, while commercial CB/PtRu retains only 50% of its initial ECSA. Meanwhile, due to the same protective layers, the Ru dissolution is decelerated, resulting in stable CO tolerance. Methanol oxidation reaction (MOR) testing indicates that the activity of newly fabricated electrocatalyst is two times higher than that of commercial CB/PtRu, and the fuel cell performance of the embedded PtRu electrocatalyst was comparable to that of commercial CB/PtRu. The embedded PtRu electrocatalyst is applicable in real DMFC operation. This study offers important and useful information for the design and fabrication of durable and CO tolerant electrocatalysts.

Comparative study of CAVET with dielectric and p-GaN gate and Mg ion-implanted current blocking layer

NASA Astrophysics Data System (ADS)

Mandal, Saptarshi; Agarwal, Anchal; Ahmadi, Elaheh; Mahadeva Bhat, K.; Laurent, Matthew A.; Keller, Stacia; Chowdhury, Srabanti

2017-08-01

In this work, a study of two different types of current aperture vertical electron transistor (CAVET) with ion-implanted blocking layer are presented. The device fabrication and performance limitation of a CAVET with a dielectric gate is discussed, and the breakdown limiting structure is evaluated using on-wafer test structures. The gate dielectric limited the device breakdown to 50V, while the blocking layer was able to withstand over 400V. To improve the device performance, an alternative CAVET structure with a p-GaN gate instead of dielectric is designed and realized. The pGaN gated CAVET structure increased the breakdown voltage to over 400V. Measurement of test structures on the wafer showed the breakdown was limited by the blocking layer instead of the gate p-n junction.

Thermoresponsive complex amphiphilic block copolymer micelles investigated by laser light scattering.

PubMed

Zhao, Fang; Xie, Dinghai; Zhang, Guangzhao; Pispas, Stergios

2008-05-22

Poly(isoprene)-block-poly(ethylene oxide) (PI-b-PEO) diblock copolymers form micelles in water. The introduction of poly(ethylene oxide)-block-poly(propylene oxide)-block-poly(ethylene oxide) (PEO-b-PPO-b-PEO) triblock copolymer leads to the formation of mixed micelles through hydrophobic interaction. The dimension of the mixed micelles varies with the weight ratio (r) of PEO-b-PPO-b-PEO to PI-b-PEO. By use of laser light scattering, we have investigated the temperature dependence of the structural evolution of the micelles at different r. At r<10, the size of the mixed micelles decreases with temperature. At r>10, due to the excessive PEO-b-PPO-b-PEO chains in solution, as temperature increases, the mixed micelles aggregate into larger micelle clusters.

Efficiency of solution-processed multilayer polymer light-emitting diodes using charge blocking layers

NASA Astrophysics Data System (ADS)

Kasparek, Christian; Rörich, Irina; Blom, Paul W. M.; Wetzelaer, Gert-Jan A. H.

2018-01-01

By blending semiconducting polymers with the cross-linkable matrix ethoxylated-(4)-bisphenol-a-dimethacrylate (SR540), an insoluble layer is acquired after UV-illumination. Following this approach, a trilayer polymer light-emitting diode (PLED) consisting of a blend of poly[N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)-benzidine] (poly-TPD) and SR540 as an electron-blocking layer, Super Yellow-Poly(p-phenylene vinylene) (SY-PPV) blended with SR540 as an emissive layer, and poly(9,9-di-n-octylfluorenyl-2,7-diyl) as a hole-blocking layer is fabricated from solution. The trilayer PLED shows a 23% increase in efficiency at low voltage as compared to a single layer SY-PPV PLED. However, at higher voltage, the advantage in current efficiency gradually decreases. A combined experimental and modelling study shows that the increased efficiency is not only due to the elimination of exciton quenching at the electrodes but also due to suppressed nonradiative trap-assisted recombination due to carrier confinement. At high voltages, holes can overcome the hole-blocking barrier, which explains the efficiency roll-off.

General and crevice corrosion study of the in-wall shielding materials for ITER vacuum vessel

NASA Astrophysics Data System (ADS)

Joshi, K. S.; Pathak, H. A.; Dayal, R. K.; Bafna, V. K.; Kimihiro, Ioki; Barabash, V.

2012-11-01

Vacuum vessel In-Wall Shield (IWS) will be inserted between the inner and outer shells of the ITER vacuum vessel. The behaviour of IWS in the vacuum vessel especially concerning the susceptibility to crevice of shielding block assemblies could cause rapid and extensive corrosion attacks. Even galvanic corrosion may be due to different metals in same electrolyte. IWS blocks are not accessible until life of the machine after closing of vacuum vessel. Hence, it is necessary to study the susceptibility of IWS materials to general corrosion and crevice corrosion under operations of ITER vacuum vessel. Corrosion properties of IWS materials were studied by using (i) Immersion technique and (ii) Electro-chemical Polarization techniques. All the sample materials were subjected to a series of examinations before and after immersion test, like Loss/Gain weight measurement, SEM analysis, and Optical stereo microscopy, measurement of surface profile and hardness of materials. After immersion test, SS 304B4 and SS 304B7 showed slight weight gain which indicate oxide layer formation on the surface of coupons. The SS 430 material showed negligible weight loss which indicates mild general corrosion effect. On visual observation with SEM and Metallography, all material showed pitting corrosion attack. All sample materials were subjected to series of measurements like Open Circuit potential, Cyclic polarization, Pitting potential, protection potential, Critical anodic current and SEM examination. All materials show pitting loop in OC2 operating condition. However, its absence in OC1 operating condition clearly indicates the activity of chloride ion to penetrate oxide layer on the sample surface, at higher temperature. The critical pitting temperature of all samples remains between 100° and 200°C.

Metal-organophosphine and metal-organophosphonium frameworks with layered honeycomb-like structures.

PubMed

Humphrey, Simon M; Allan, Phoebe K; Oungoulian, Shaunt E; Ironside, Matthew S; Wise, Erica R

2009-04-07

Phosphanotriylbenzenecarboxylic acid (ptbcH(3); P(C(6)H(4)-p-CO(2)H)(3)) and its methyl phosphonium iodide derivative (mptbcH(3)I; {H(3)CP(C(6)H(4)-p-CO(2)H)(3)}I) have been used as organic building blocks in reaction with Zn(ii) salts to obtain a series of related two-dimensional coordination polymers with honeycomb-like networks. The variable coordination number and oxidation states available to phosphorus have been exploited to produce a family of related phosphine coordination materials (PCMs) using a single ligand precursor. The phosphine carboxylate trianion, ptbc(3-), reacted with Zn(ii) to form 3,3-connected undulating hexagonal sheets based on tetrahedral P and Zn nodes, where Zn-ptbc = 1 : 1. When hydroxide was used as an additional framework ligand, Zn(4)(OH)(2) clusters were obtained. The clusters support 6,3-connected bilayers that consist of pairs of fused hexagonal sheets (Zn-ptbc = 2 : 1) with intra-layer pore spaces. The Zn(4)(OH)(2) clusters are also coordinated by solvent, which was preferentially displaced when the bilayer material was synthesized in the presence of ethylene diamine. Treatment of ptbc(3-) with MeI resulted in methylation of the phosphine to give the P(v) phosphonium iodide salt derivative. The formally dianionic methylphosphonium tricarboxylate building block, mptbc(2-), has the same trigonal-pyramidal bridging geometry as the parent phosphine. However, mptbc(2-) reacted with Zn(ii) on a 1 : 1 stoichiometric ratio to give an unusual trilayer sheet polymer that is based exclusively on 3-connected nodes. Solid-state (31)P NMR studies confirmed that the phosphine ligands were resistant to oxidation upon solvothermal reaction under aerobic conditions.

Low temperature perovskite solar cells with an evaporated TiO 2 compact layer for perovskite silicon tandem solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bett, Alexander J.; Schulze, Patricia S. C.; Winkler, Kristina

Silicon-based tandem solar cells can overcome the efficiency limit of single junction silicon solar cells. Perovskite solar cells are particularly promising as a top cell in monolithic tandem devices due to their rapid development towards high efficiencies, a tunable band gap with a sharp optical absorption edge and a simple production process. In monolithic tandem devices, the perovskite solar cell is deposited directly on the silicon cell, requiring low-temperature processes (< 200 °C) to maintain functionality of under-lying layers of the silicon cell in case of highly efficient silicon hetero-junction (SHJ) bottom solar cell. In this work, we present amore » complete low-temperature process for perovskite solar cells including a mesoporous titanium oxide (TiO 2) scaffold - a structure yielding the highest efficiencies for single-junction perovskite solar cells. We show that evaporation of the compact TiO 2 hole blocking layer and ultra-violet (UV) curing for the mesoporous TiO 2 layer allows for good performance, comparable to high-temperature (> 500 °C) processes. With both manufacturing routes, we obtain short-circuit current densities (J SC) of about 20 mA/cm 2, open-circuit voltages (V OC) over 1 V, fill factors (FF) between 0.7 and 0.8 and efficiencies (n) of more than 15%. We further show that the evaporated TiO 2 layer is suitable for the application in tandem devices. The series resistance of the layer itself and the contact resistance to an indium doped tin oxide (ITO) interconnection layer between the two sub-cells are low. Additionally, the low parasitic absorption for wavelengths above the perovskite band gap allow a higher absorption in the silicon bottom solar cell, which is essential to achieve high tandem efficiencies.« less

Low temperature perovskite solar cells with an evaporated TiO 2 compact layer for perovskite silicon tandem solar cells

DOE PAGES

Bett, Alexander J.; Schulze, Patricia S. C.; Winkler, Kristina; ...

2017-09-21

Silicon-based tandem solar cells can overcome the efficiency limit of single junction silicon solar cells. Perovskite solar cells are particularly promising as a top cell in monolithic tandem devices due to their rapid development towards high efficiencies, a tunable band gap with a sharp optical absorption edge and a simple production process. In monolithic tandem devices, the perovskite solar cell is deposited directly on the silicon cell, requiring low-temperature processes (< 200 °C) to maintain functionality of under-lying layers of the silicon cell in case of highly efficient silicon hetero-junction (SHJ) bottom solar cell. In this work, we present amore » complete low-temperature process for perovskite solar cells including a mesoporous titanium oxide (TiO 2) scaffold - a structure yielding the highest efficiencies for single-junction perovskite solar cells. We show that evaporation of the compact TiO 2 hole blocking layer and ultra-violet (UV) curing for the mesoporous TiO 2 layer allows for good performance, comparable to high-temperature (> 500 °C) processes. With both manufacturing routes, we obtain short-circuit current densities (J SC) of about 20 mA/cm 2, open-circuit voltages (V OC) over 1 V, fill factors (FF) between 0.7 and 0.8 and efficiencies (n) of more than 15%. We further show that the evaporated TiO 2 layer is suitable for the application in tandem devices. The series resistance of the layer itself and the contact resistance to an indium doped tin oxide (ITO) interconnection layer between the two sub-cells are low. Additionally, the low parasitic absorption for wavelengths above the perovskite band gap allow a higher absorption in the silicon bottom solar cell, which is essential to achieve high tandem efficiencies.« less

Preparation and Oxidation Performance of Y and Ce-Modified Cr Coating on open-cell Ni-Cr-Fe Alloy Foam by the Pack Cementation

NASA Astrophysics Data System (ADS)

Pang, Q.; Hu, Z. L.; Wu, G. H.

2016-12-01

Metallic foams with a high fraction of porosity, low density and high-energy absorption capacity are a rapidly emerging class of novel ultralight weight materials for various engineering applications. In this study, Y-Cr and Ce-Cr-coated Ni-Cr-Fe alloy foams were prepared via the pack cementation method, and the effects of Y and Ce addition on the coating microstructure and oxidation performance were analyzed in order to improve the oxidation resistance of open-cell nickel-based alloy foams. The results show that the Ce-Cr coating is relatively more uniform and has a denser distribution on the surface of the nickel-based alloy foam. The surface grains of the Ce-Cr-coated alloy foam are finer compared to those of the Y-Cr-coated alloy foam. An obvious Ce peak appears on the interface between the coating and the alloy foam strut, which gives rise to a "site-blocking" effect for the short-circuit transport of the cation in the substrate. X-ray diffraction analysis shows that the Y-Cr-coated alloy foam mainly consists of Cr, (Fe, Ni) and (Ni, Cr) phases in the surface layer. The Ce-Cr-coated alloy foam is mainly composed of Cr and (Ni, Cr) phases. Furthermore, the addition of Y and Ce clearly lead to an improvement in the oxidation resistance of the coated alloy foams in the temperature range of 900-1000 °C. The addition of Ce is especially effective in enhancing the diffusion of chromium to the oxidation front, thus, accelerating the formation of a Cr2O3 layer.

Green and Rational Design of 3D Layer-by-Layer MnO x Hierarchically Mesoporous Microcuboids from MOF Templates for High-Rate and Long-Life Li-Ion Batteries.

PubMed

Hu, Xiaoshi; Lou, Xiaobing; Li, Chao; Yang, Qi; Chen, Qun; Hu, Bingwen

2018-05-02

Rational design and delicate control on the textural properties of metal-oxide materials for diverse structure-dependent applications still remain formidable challenges. Here, we present an eco-friendly and facile approach to smartly fabricate three-dimensional (3D) layer-by-layer manganese oxide (MnO x ) hierarchical mesoporous microcuboids from a Mn-MOF-74-based template, using a one-step solution-phase reaction scheme at room temperature. Through the controlled exchange of metal-organic framework (MOF) ligand with OH - in alkaline aqueous solution and in situ oxidation of manganese hydroxide intermediate, the Mn-MOF-74 template/precursor was readily converted to Mn 3 O 4 or δ-MnO 2 counterpart consisting of primary nanoparticle and nanosheet building blocks, respectively, with well-retained morphology. By X-ray diffraction, transmission electron microscopy (TEM), scanning electron microscopy, high-resolution TEM, N 2 adsorption-desorption analysis and other techniques, their crystal structure, detailed morphology, and microstructure features were unambiguously revealed. Specifically, their electrochemical Li-ion insertion/extraction properties were well evaluated, and it turns out that these unique 3D microcuboids could achieve a sustained superior lithium-storage performance especially at high rates benefited from the well-orchestrated structural characteristics (Mn 3 O 4 microcuboids: 890.7, 767.4, 560.1, and 437.1 mAh g -1 after 400 cycles at 0.2, 0.5, 1, and 2 A g -1 , respectively; δ-MnO 2 microcuboids: 991.5, 660.8, 504.4, and 362.1 mAh g -1 after 400 cycles at 0.2, 0.5, 1, and 2 A g -1 , respectively). To our knowledge, this is the most durable high-rate capability as well as the highest reversible capacity ever reported for pure MnO x anodes, which even surpass most of their hybrids. This facile, green, and economical strategy renews the traditional MOF-derived synthesis for highly tailorable functional materials and opens up new opportunities for metal-oxide electrodes with high performance.

A new method for fabrication of diamond-dust blocking filters

NASA Technical Reports Server (NTRS)

Collard, H. R.; Hogan, R. C.

1986-01-01

Thermal embedding of diamond dust onto a polyethylene-coated Al plate has been used to make a blocking filter for FIR applications. The Al plate is sandwiched between two Mylar 'blankets' and the air between the layers is removed by means of a small vacuum pump. After the polyethylene is heated and softened, the diamond dust is applied to the polyethylene coating using a brush. The optimum diamond dust grain sizes corresponding to polyethylene layer thicknesses of 9-12 microns are given in a table, and the application of the blocking filter to spectrometric measurements in the FIR is described. An exploded view diagram of the layered structure of the blocking filter is provided.

Electronic, optical properties and chemical bonding in six novel 1111-like chalcogenide fluorides AMChF (A=Sr, Ba; M=Cu, Ag; and Ch=S, Se, Te) from first principles calculations

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bannikov, V.V.; Shein, I.R.; Ivanovskii, A.L., E-mail: ivanovskii@ihim.uran.ru

2012-12-15

Employing first-principles band structure calculations, we have examined the electronic, optical properties and the peculiarities of the chemical bonding for six newly synthesized layered quaternary 1111-like chalcogenide fluorides SrAgSF, SrAgSeF, SrAgTeF, BaAgSF, BaAgSeF, and SrCuTeF, which are discussed in comparison with some isostructural 1111-like chalcogenide oxides. We found that all of the studied phases AMChF (A=Sr, Ba; M=Cu, Ag; and Ch=S, Se, Te) are semiconductors for which the fitted 'experimental' gaps lie in the interval from 2.23 eV (for SrAgSeF) to 3.07 eV (for SrCuTeF). The near-Fermi states of AMChF are formed exclusively by the valence orbitals of the atomsmore » from the blocks (MCh); thus, these phases belong to the layered materials with 'natural multiple quantum wells'. The bonding in these new AMChF phases is described as a high-anisotropic mixture of ionic and covalent contributions, where ionic M-Ch bonds together with covalent M-Ch and Ch-Ch bonds take place inside blocks (MCh), while inside blocks (AF) and between the adjacent blocks (MCh)/(AF) mainly ionic bonds emerge. - Graphical Abstract: Isoelectronic surface for SrAgSeF and atomic-resolved densities of states for SrAgTeF, and SrCuTeF. Highlights: Black-Right-Pointing-Pointer Very recently six new layered 1111-like chalcogenide fluorides AMChF were synthesized. Black-Right-Pointing-Pointer Electronic, optical properties for AMChF phases were examined from first principles. Black-Right-Pointing-Pointer All these materials are characterized as non-magnetic semiconductors. Black-Right-Pointing-Pointer Bonding is highly anisotropic and includes ionic and covalent contributions. Black-Right-Pointing-Pointer Introduction of magnetic ions in AMChF is proposed for search of novel magnetic materials.« less

Boundary layers of aqueous surfactant and block copolymer solutions against hydrophobic and hydrophilic solid surfaces

NASA Astrophysics Data System (ADS)

Steitz, Roland; Schemmel, Sebastian; Shi, Hongwei; Findenegg, Gerhard H.

2005-03-01

The boundary layer of aqueous surfactants and amphiphilic triblock copolymers against flat solid surfaces of different degrees of hydrophobicity was investigated by neutron reflectometry (NR), grazing incidence small angle neutron scattering (GISANS) and atomic force microscopy (AFM). Solid substrates of different hydrophobicities were prepared by appropriate surface treatment or by coating silicon wafers with polymer films of different chemical natures. For substrates coated with thin films (20-30 nm) of deuterated poly(styrene) (water contact angle \\theta_{\\mathrm {w}} \\approx 90^\\circ ), neutron reflectivity measurements on the polymer/water interface revealed a water depleted liquid boundary layer of 2-3 nm thickness and a density about 90% of the bulk water density. No pronounced depletion layer was found at the interface of water against a less hydrophobic polyelectrolyte coating (\\theta_{\\mathrm {w}} \\approx 63^\\circ ). It is believed that the observed depletion layer at the hydrophobic polymer/water interface is a precursor of the nanobubbles which have been observed by AFM at this interface. Decoration of the polymer coatings by adsorbed layers of nonionic CmEn surfactants improves their wettability by the aqueous phase at surfactant concentrations well below the critical micellar concentration (CMC) of the surfactant. Here, GISANS experiments conducted on the system SiO2/C8E4/D2O reveal that there is no preferred lateral organization of the C8E4 adsorption layers. For amphiphilic triblock copolymers (PEO-PPO-PEO) it is found that under equilibrium conditions they form solvent-swollen brushes both at the air/water and the solid/water interface. In the latter case, the brushes transform to uniform, dense layers after extensive rinsing with water and subsequent solvent evaporation. The primary adsorption layers maintain properties of the precursor brushes. In particular, their thickness scales with the number of ethylene oxide units (EO) of the block copolymer. In the case of dip-coating without subsequent rinsing, surface patterns of the presumably crystalline polymer on top of the primary adsorption layer develop upon drying under controlled conditions. The morphology depends mainly on the nominal surface coverage with the triblock copolymer. Similar morphologies are found on bare and polystyrene-coated silicon substrates, indicating that the surface patterning is mainly driven by segregation forces within the polymer layers and not by interactions with the substrate.

Synchrotron X-ray diffraction investigations on strains in the oxide layer of an irradiated Zircaloy fuel cladding

NASA Astrophysics Data System (ADS)

Chollet, Mélanie; Valance, Stéphane; Abolhassani, Sousan; Stein, Gene; Grolimund, Daniel; Martin, Matthias; Bertsch, Johannes

2017-05-01

For the first time the microstructure of the oxide layer of a Zircaloy-2 cladding after 9 cycles of irradiation in a boiling water reactor has been analyzed with synchrotron micro-X-ray diffraction. Crystallographic strains of the monoclinic and to some extent of the tetragonal ZrO2 are depicted through the thick oxide layer. Thin layers of sub-oxide at the oxide-metal interface as found for autoclave-tested samples and described in the literature, have not been observed in this material maybe resulting from irradiation damage. Shifts of selected diffraction peaks of the monoclinic oxide show that the uniform strain produced during oxidation is orientated in the lattice and displays variations along the oxide layer. Diffraction peaks and their shifts from families of diffracting planes could be translated into a virtual tensor. This virtual tensor exhibits changes through the oxide layer passing by tensile or compressive components.

Characterization of strain relaxation behavior in Si1- x Ge x epitaxial layers by dry oxidation

NASA Astrophysics Data System (ADS)

Jang, Hyunchul; Kim, Byongju; Koo, Sangmo; Park, Seran; Ko, Dae-Hong

2017-11-01

We fabricated fully strained Si0.77Ge0.23 epitaxial layers on Si substrates and investigated their strain relaxation behaviors under dry oxidation and the effect of oxidation temperatures and times. After the oxidation process, a Ge-rich layer was formed between the oxide and the remaining Si0.77Ge0.23 layer. Using reciprocal space mapping measurements, we confirmed that the strain of the Si0.77Ge0.23 layers was efficiently relaxed after oxidation, with a maximum relaxation value of 70% after oxidation at 850 °C for 120 min. The surface of Si0.77Ge0.23 layer after strain relaxation by dry oxidation was smoother than a thick Si0.77Ge0.23 layer, which achieved a similar strain relaxation value by increasing the film thickness. Additionally, N2 annealing was performed in order to compare its effect on the relaxation compared to dry oxidation and to identify relaxation mechanisms, other than the thermally driven ones, occurring during dry oxidation.

A Prototype Ice-Melting Probe for Collecting Biological Samples from Cryogenic Ice at Low Pressure.

PubMed

Davis, Ashley

2017-08-01

In the Solar System, the surface of an icy moon is composed of irregular ice formations at cryogenic temperatures (<200 K), with an oxidized surface layer and a tenuous atmosphere at very low pressure (<10 -6 atm). A lander mission, whose aim is to collect and analyze biological samples from the surface ice, must contain a device that collects samples without refreezing liquid and without sublimation of ice. In addition, if the samples are biological in nature, then precautions must be taken to ensure the samples do not overheat or mix with the oxidized layer. To achieve these conditions, the collector must maintain temperatures close to maintenance or growth conditions of the organism (<293 K), and it must separate or neutralize the oxidized layer and be physically gentle. Here, we describe a device that addresses these requirements and is compatible with low atmospheric pressure while using no pumps. The device contains a heated conical probe with a central orifice, which is forced into surface ice and directs the meltwater upward into a reservoir. The force on the probe is proportional to the height of meltwater (pressure) obtained in the system and allows regulation of the melt rate and temperature of the sample. The device can collect 5-50 mL of meltwater from the surface of an ice block at 233-208 K with an environmental pressure of less than 10 -2 atm while maintaining a sample temperature between 273 and 293 K. These conditions maintain most biological samples in a pristine state and maintain the integrity of most organisms' structure and function. Key Words: Europa-Icy moon-Microbe-Eukaryote-Spacecraft. Astrobiology 17, 709-720.

Steady evolution of hillslopes in layered landscapes: self-organization of a numerical hogback

NASA Astrophysics Data System (ADS)

Glade, R.; Anderson, R. S.

2017-12-01

Landscapes developed in layered sedimentary or igneous rocks are common across Earth, as well as on other planets. Features such as hogbacks, exposed dikes, escarpments and mesas exhibit resistant rock layers in tilted, vertical, or horizontal orientation­s adjoining more erodible rock. Hillslopes developed in the erodible rock are typically characterized by steep, linear-to-concave slopes or "ramps" mantled with material derived from the resistant layers, often in the form of large blocks. Our previous work on hogbacks has shown that feedbacks between weathering and transport of the blocks and underlying soft rock are fundamental to their formation; our numerical model incorporating these feedbacks explain the development of commonly observed concave-up slope profiles in the absence of rilling processes. Here we employ an analytic approach to describe the steady behavior of our model, in which hillslope form and erosion rates remain constant in the reference frame of the retreating feature. We first revisit a simple geometric analysis that relates structural dip to erosion rates. We then explore the mechanisms by which our numerical model of hogback evolution self-organizes to meet these geometric expectations. Autogenic adjustment of soil depth, slope and erosion rates enables efficient transport of resistant blocks; this allows erosion of the resistant layer to keep up with base level fall rate, leading to steady evolution of the feature. Analytic solutions relate easily measurable field quantities such as ramp length, slope, block size and resistant layer dip angle to local incision rate, block velocity, and block weathering rate. These equations provide a framework for exploring the evolution of layered landscapes, and pinpoint the processes for which we require a more thorough understanding to predict the evolution of such signature landscapes over time.

Metal Organic Framework-Templated Chemiresistor: Sensing Type Transition from P-to-N Using Hollow Metal Oxide Polyhedron via Galvanic Replacement.

PubMed

Jang, Ji-Soo; Koo, Won-Tae; Choi, Seon-Jin; Kim, Il-Doo

2017-08-30

Facile synthesis of porous nanobuilding blocks with high surface area and uniform catalyst functionalization has always been regarded as an essential requirement for the development of highly sensitive and selective chemical sensors. Metal-organic frameworks (MOFs) are considered as one of the most ideal templates due to their ability to encapsulate ultrasmall catalytic nanoparticles (NPs) in microporous MOF structures in addition to easy removal of the sacrificial MOF scaffold by calcination. Here, we introduce a MOFs derived n-type SnO 2 (n-SnO 2 ) sensing layer with hollow polyhedron structures, obtained from p-n transition of MOF-templated p-type Co 3 O 4 (p-Co 3 O 4 ) hollow cubes during galvanic replacement reaction (GRR). In addition, the Pd NPs encapsulated in MOF and residual Co 3 O 4 clusters partially remained after GRR led to uniform functionalization of efficient cocatalysts (PdO NPs and p-Co 3 O 4 islands) on the porous and hollow polyhedron SnO 2 structures. Due to high gas accessibility through the meso- and macrosized pores in MOF-templated oxides and effective modulation of electron depletion layer assisted by the creation of numerous p-n junctions, the GRR-treated SnO 2 structures exhibited 21.9-fold higher acetone response (R air /R gas = 22.8 @ 5 ppm acetone, 90%RH) compared to MOF-templated p-Co 3 O 4 hollow structures. To the best of our knowledge, the selectivity and response amplitudes reported here for the detection of acetone are superior to those MOF derived metal oxide sensing layers reported so far. Our results demonstrate that highly active MOF-derived sensing layers can be achieved via p-n semiconducting phase transition, driven by a simple and versatile GRR process combined with MOF templating route.

Oxide-organic heterostructures: a case study of charge transfer disturbance at a SnO2-copper phthalocyanine buried interface.

PubMed

Krzywiecki, Maciej; Grządziel, Lucyna; Powroźnik, Paulina; Kwoka, Monika; Rechmann, Julian; Erbe, Andreas

2018-06-13

Reduced tin dioxide/copper phthalocyanine (SnOx/CuPc) heterojunctions recently gained much attention in hybrid electronics due to their defect structure, allowing tuning of the electronic properties at the interface towards particular needs. In this work, we focus on the creation and analysis of the interface between the oxide and organic layer. The inorganic/organic heterojunction was created by depositing CuPc on SnOx layers prepared with the rheotaxial growth and vacuum oxidation (RGVO) method. Exploiting surface sensitive photoelectron spectroscopy techniques, angle dependent X-ray and UV photoelectron spectroscopy (ADXPS and UPS, respectively), supported by semi-empirical simulations, the role of carbon from adventitious organic adsorbates directly at the SnOx/CuPc interface was investigated. The adventitious organic adsorbates were blocking electronic interactions between the environment and surface, hence pinning energy levels. A significant interface dipole of 0.4 eV was detected, compensating for the difference in work functions of the materials in contact, however, without full alignment of the energy levels. From the ADXPS and UPS results, a detailed diagram of the interfacial electronic structure was constructed, giving insight into how to tailor SnOx/CuPc heterojunctions towards specific applications. On the one hand, parasitic surface contamination could be utilized in technology for passivation-like processes. On the other hand, if one needs to keep the oxide's surficial interactions fully accessible, like in the case of stacked electronic systems or gas sensor applications, carbon contamination must be carefully avoided at each processing step.

Switchable silver mirrors with long memory effects.

PubMed

Park, Chihyun; Seo, Seogjae; Shin, Haijin; Sarwade, Bhimrao D; Na, Jongbeom; Kim, Eunkyoung

2015-01-01

An electrochemically stable and bistable switchable mirror was achieved for the first time by introducing (1) a thiol-modified indium tin oxide (ITO) electrode for the stabilization of the metallic film and (2) ionic liquids as an anion-blocking layer, to achieve a long memory effect. The growth of the metallic film was denser and faster at the thiol-modified ITO electrode than at a bare ITO electrode. The electrochemical stability of the metallic film on the thiol-modified ITO was enhanced, maintaining the metallic state without rupture. In the voltage-off state, the metal film maintained bistability for a long period (>2 h) when ionic liquids were introduced as electrolytes for the switchable mirror. The electrical double layer in the highly viscous ionic liquid electrolyte seemed to effectively form a barrier to the bromide ions, to protect the metal thin film from them when in the voltage-off state.

40 CFR Table 1 to Subpart Sssss of... - Emission Limits

Code of Federal Regulations, 2012 CFR

2012-07-01

... that are controlled with a thermal or catalytic oxidizer a. The 3-hour block average THC concentration... the outlet of the control device; or b. The 3-hour block average THC mass emissions rate must be... than a thermal or catalytic oxidizer a. The 3-hour block average THC concentration must not exceed 20...

40 CFR Table 1 to Subpart Sssss of... - Emission Limits

Code of Federal Regulations, 2013 CFR

2013-07-01

... that are controlled with a thermal or catalytic oxidizer a. The 3-hour block average THC concentration... the outlet of the control device; or b. The 3-hour block average THC mass emissions rate must be... than a thermal or catalytic oxidizer a. The 3-hour block average THC concentration must not exceed 20...

40 CFR Table 1 to Subpart Sssss of... - Emission Limits

Code of Federal Regulations, 2014 CFR

2014-07-01

... that are controlled with a thermal or catalytic oxidizer a. The 3-hour block average THC concentration... the outlet of the control device; or b. The 3-hour block average THC mass emissions rate must be... than a thermal or catalytic oxidizer a. The 3-hour block average THC concentration must not exceed 20...

40 CFR Table 1 to Subpart Sssss of... - Emission Limits

Code of Federal Regulations, 2011 CFR

2011-07-01

... that are controlled with a thermal or catalytic oxidizer a. The 3-hour block average THC concentration... the outlet of the control device; or b. The 3-hour block average THC mass emissions rate must be... than a thermal or catalytic oxidizer a. The 3-hour block average THC concentration must not exceed 20...

40 CFR Table 1 to Subpart Sssss of... - Emission Limits

Code of Federal Regulations, 2010 CFR

2010-07-01

... that are controlled with a thermal or catalytic oxidizer a. The 3-hour block average THC concentration... the outlet of the control device; or b. The 3-hour block average THC mass emissions rate must be... than a thermal or catalytic oxidizer a. The 3-hour block average THC concentration must not exceed 20...

Influence of substrate preparation on the shaping of the topography of the surface of nanoceramic oxide layers

NASA Astrophysics Data System (ADS)

Bara, Marek; Kubica, Marek

2014-02-01

The paper discusses the shaping mechanism and changes occurring in the structure and topography of the surface of nanoceramic oxide layers during their formation. The paper presents the influence of substrate preparation on the surface topography of oxide layers. The layers were produced via hard anodizing on the EN AW-5251 aluminum alloy. The layers obtained were subjected to microscope examinations, image and chemical composition analyses, and stereometric examinations. Heredity of substrate properties in the topography of the surface of nanoceramic oxide layers formed as a result of electrochemical oxidation has been shown.

Impedance of Barrier-Type Oxide Layer on Aluminum

NASA Astrophysics Data System (ADS)

Oh, Han-Jun; Kim, Jung-Gu; Jeong, Yong-Soo; Chi, Choong-Soo

2000-12-01

The impedance characteristics of barrier-type oxide layers on aluminum was studied using impedance spectroscopy. Since anodic films on Al have a variable stoichiometry with a gradual reduction of oxygen deficiency towards the oxide-electrolyte interface, the interpretation of impedance spectra for oxide layers is complex and the impedance of surface layers differs from those of ideal capacitors. This frequency response of the layer with conductance gradients cannot be described by a single resistance-capacitance (RC) element. The oxide layers of Al are properly described by the Young model of dielectric constant with a vertical decay of conductivity.

Liquid flow cells having graphene on nitride for microscopy

DOEpatents

Adiga, Vivekananda P.; Dunn, Gabriel; Zettl, Alexander K.; Alivisatos, A. Paul

2016-09-20

This disclosure provides systems, methods, and apparatus related to liquid flow cells for microscopy. In one aspect, a device includes a substrate having a first and a second oxide layer disposed on surfaces of the substrate. A first and a second nitride layer are disposed on the first and second oxide layers, respectively. A cavity is defined in the first oxide layer, the first nitride layer, and the substrate, with the cavity including a third nitride layer disposed on walls of the substrate and the second oxide layer that define the cavity. A channel is defined in the second oxide layer. An inlet port and an outlet port are defined in the second nitride layer and in fluid communication with the channel. A plurality of viewports is defined in the second nitride layer. A first graphene sheet is disposed on the second nitride layer covering the plurality of viewports.

Tunable PhoXonic Band Gap Materials from Self-Assembly of Block Copolymers and Colloidal Nanocrystals (NBIT Phase II)

DTIC Science & Technology

2013-12-12

their application in sensors and as displays. We found that the thermochromic behavior of a lamellar block copolymer poly(styrene-b-2-vinylpyridine...the solution pH. The findings of this work provide the basis for understanding and controlling the properties of thermochromic block copolymers...by the glassy PS layers . The glassy layers completely constrain the lateral expansion of the P2VP gel block and the dislocation defect network that

Oxidation resistant high temperature thermal cycling resistant coatings on silicon-based substrates and process for the production thereof

DOEpatents

Sarin, V.K.

1990-08-21

An oxidation resistant, high temperature thermal cycling resistant coated ceramic article for ceramic heat engine applications is disclosed. The substrate is a silicon-based material, i.e. a silicon nitride- or silicon carbide-based monolithic or composite material. The coating is a graded coating of at least two layers: an intermediate AlN or Al[sub x]N[sub y]O[sub z] layer and an aluminum oxide or zirconium oxide outer layer. The composition of the coating changes gradually from that of the substrate to that of the AlN or Al[sub x]N[sub y]O[sub z] layer and further to the composition of the aluminum oxide or zirconium oxide outer layer. Other layers may be deposited over the aluminum oxide layer. A CVD process for depositing the graded coating on the substrate is also disclosed.

Oxidation resistant high temperature thermal cycling resistant coatings on silicon-based substrates and process for the production thereof

DOEpatents

Sarin, Vinod K.

1990-01-01

An oxidation resistant, high temperature thermal cycling resistant coated ceramic article for ceramic heat engine applications. The substrate is a silicon-based material, i.e. a silicon nitride- or silicon carbide-based monolithic or composite material. The coating is a graded coating of at least two layers: an intermediate AlN or Al.sub.x N.sub.y O.sub.z layer and an aluminum oxide or zirconium oxide outer layer. The composition of the coating changes gradually from that of the substrate to that of the AlN or Al.sub.x N.sub.y O.sub.z layer and further to the composition of the aluminum oxide or zirconium oxide outer layer. Other layers may be deposited over the aluminum oxide layer. A CVD process for depositing the graded coating on the substrate is also disclosed.

Macroscopic assembled, ultrastrong and H2SO4-resistant fibres of polymer-grafted graphene oxide

NASA Astrophysics Data System (ADS)

Zhao, Xiaoli; Xu, Zhen; Zheng, Bingna; Gao, Chao

2013-11-01

Nacre realizes strength and toughness through hierarchical designs with primary ``brick and mortar'' structures of alternative arrangement of nanoplatelets and biomacromolecules, and these have inspired the fabrication of nanocomposites for decades. However, to simultaneously solve the three critical problems of phase separation, low interfacial strength and random orientation of nanofillers for nanocomposites is a great challenge yet. Here we demonstrate that polymer-grafted graphene oxide sheets are exceptional building blocks for nanocomposites. Their liquid crystalline dispersions can be wet-spun into continuous fibres. Because of well-ordering and efficient load transfer, the composites show remarkable tensile strength (500 MPa), three to four times higher than nacre. The uniform layered microstructures and strong interlayer interactions also endow the fibres good resistance to chemicals including 98% sulfuric acid. We studied the enhancing effect of nanofillers with fraction in a whole range (0-100%), and proposed an equation to depict the relationship.

Exchange coupling and NOL magnetism consideration in Co 1-xFe x specular spin-valves

NASA Astrophysics Data System (ADS)

Doi, M.; Izumi, M.; Abe, Y.; Fukuzawa, H.; Fuke, H. N.; Iwasaki, H.; Sahashi, M.

2005-02-01

To confirm the origin of the exchange coupling through the nano-oxide layer (NOL), the detailed analyses of the magnetization curve and the temperature dependence on magnetization for the Co1-xFex-NOL samples with various oxidation processes are investigated. The field cooling effect is observed for NOL-inserted samples, which suggests the existence of the antiferromagnetic (AFM) component in the NOL. The characteristic temperature (blocking temperature) increases with increase in the Fe content for Co1-xFex(x=0.08,0.17,0.26)-NOL. These results support that NOL pinning appears higher than room temperature. Further, the twisted coupling through the NOL observed for the Co0.50Fe0.50-NOL is discussed from the viewpoint of the magnetic roughness due to the ferrimagnetic nature of the very thin NOL in specular spin valve (SPSV).

Layer-by-layer assembly of two-dimensional materials into wafer-scale heterostructures

NASA Astrophysics Data System (ADS)

Kang, Kibum; Lee, Kan-Heng; Han, Yimo; Gao, Hui; Xie, Saien; Muller, David A.; Park, Jiwoong

2017-10-01

High-performance semiconductor films with vertical compositions that are designed to atomic-scale precision provide the foundation for modern integrated circuitry and novel materials discovery. One approach to realizing such films is sequential layer-by-layer assembly, whereby atomically thin two-dimensional building blocks are vertically stacked, and held together by van der Waals interactions. With this approach, graphene and transition-metal dichalcogenides--which represent one- and three-atom-thick two-dimensional building blocks, respectively--have been used to realize previously inaccessible heterostructures with interesting physical properties. However, no large-scale assembly method exists at present that maintains the intrinsic properties of these two-dimensional building blocks while producing pristine interlayer interfaces, thus limiting the layer-by-layer assembly method to small-scale proof-of-concept demonstrations. Here we report the generation of wafer-scale semiconductor films with a very high level of spatial uniformity and pristine interfaces. The vertical composition and properties of these films are designed at the atomic scale using layer-by-layer assembly of two-dimensional building blocks under vacuum. We fabricate several large-scale, high-quality heterostructure films and devices, including superlattice films with vertical compositions designed layer-by-layer, batch-fabricated tunnel device arrays with resistances that can be tuned over four orders of magnitude, band-engineered heterostructure tunnel diodes, and millimetre-scale ultrathin membranes and windows. The stacked films are detachable, suspendable and compatible with water or plastic surfaces, which will enable their integration with advanced optical and mechanical systems.

Layer-by-layer assembly of two-dimensional materials into wafer-scale heterostructures.

PubMed

Kang, Kibum; Lee, Kan-Heng; Han, Yimo; Gao, Hui; Xie, Saien; Muller, David A; Park, Jiwoong

2017-10-12

High-performance semiconductor films with vertical compositions that are designed to atomic-scale precision provide the foundation for modern integrated circuitry and novel materials discovery. One approach to realizing such films is sequential layer-by-layer assembly, whereby atomically thin two-dimensional building blocks are vertically stacked, and held together by van der Waals interactions. With this approach, graphene and transition-metal dichalcogenides-which represent one- and three-atom-thick two-dimensional building blocks, respectively-have been used to realize previously inaccessible heterostructures with interesting physical properties. However, no large-scale assembly method exists at present that maintains the intrinsic properties of these two-dimensional building blocks while producing pristine interlayer interfaces, thus limiting the layer-by-layer assembly method to small-scale proof-of-concept demonstrations. Here we report the generation of wafer-scale semiconductor films with a very high level of spatial uniformity and pristine interfaces. The vertical composition and properties of these films are designed at the atomic scale using layer-by-layer assembly of two-dimensional building blocks under vacuum. We fabricate several large-scale, high-quality heterostructure films and devices, including superlattice films with vertical compositions designed layer-by-layer, batch-fabricated tunnel device arrays with resistances that can be tuned over four orders of magnitude, band-engineered heterostructure tunnel diodes, and millimetre-scale ultrathin membranes and windows. The stacked films are detachable, suspendable and compatible with water or plastic surfaces, which will enable their integration with advanced optical and mechanical systems.

High Temperature Oxidation of Hot-Dip Aluminized T92 Steels

NASA Astrophysics Data System (ADS)

Abro, Muhammad Ali; Hahn, Junhee; Lee, Dong Bok

2018-03-01

The T92 steel plate was hot-dip aluminized, and oxidized in order to characterize the high-temperature oxidation behavior of hot-dip aluminized T92 steel. The coating consisted of Al-rich topcoat with scattered Al3Fe grains, Al3Fe-rich upper alloy layer with scattered (Al, Al5Fe2, AlFe)-grains, and Al5Fe2-rich lower alloy layer with scattered (Al5Fe2, AlFe)-grains. Oxidation at 800 °C for 20 h formed (α-Al2O3 scale)/(AlFe layer)/(AlFe3 layer)/(α-Fe(Al) layer), while oxidation at 900 °C for 20 h formed (α-Al2O3 scale plus some Fe2O3)/(AlFe layer)/(AlFe3 layer)/(α-Fe(Al) layer) from the surface. During oxidation, outward migration of all substrate elements, inward diffusion of oxygen, and back and forth diffusion of Al occurred according to concentration gradients. Also, diffusion transformed and broadened AlFe and AlFe3 layers dissolved with some oxygen and substrate alloying elements. Hot-dip aluminizing improved the high-temperature oxidation resistance of T92 steel through preferential oxidation of Al at the surface.

High Temperature Oxidation of Hot-Dip Aluminized T92 Steels

NASA Astrophysics Data System (ADS)

Abro, Muhammad Ali; Hahn, Junhee; Lee, Dong Bok

2018-05-01

The T92 steel plate was hot-dip aluminized, and oxidized in order to characterize the high-temperature oxidation behavior of hot-dip aluminized T92 steel. The coating consisted of Al-rich topcoat with scattered Al3Fe grains, Al3Fe-rich upper alloy layer with scattered (Al, Al5Fe2, AlFe)-grains, and Al5Fe2-rich lower alloy layer with scattered (Al5Fe2, AlFe)-grains. Oxidation at 800 °C for 20 h formed (α-Al2O3 scale)/(AlFe layer)/(AlFe3 layer)/(α-Fe(Al) layer), while oxidation at 900 °C for 20 h formed (α-Al2O3 scale plus some Fe2O3)/(AlFe layer)/(AlFe3 layer)/(α-Fe(Al) layer) from the surface. During oxidation, outward migration of all substrate elements, inward diffusion of oxygen, and back and forth diffusion of Al occurred according to concentration gradients. Also, diffusion transformed and broadened AlFe and AlFe3 layers dissolved with some oxygen and substrate alloying elements. Hot-dip aluminizing improved the high-temperature oxidation resistance of T92 steel through preferential oxidation of Al at the surface.

Plasma Oxidation Of Silver And Zinc In Low-Emissivity Stacks

NASA Astrophysics Data System (ADS)

Ross, R. C.; Sherman, R.,; Bunger, R. A.; Nadel, S. J.

1987-11-01

The oxidation of silver and zinc films was studied by exposing metallic films to low-power 02 plasmas and analyzing the reacted films. This type of oxidation is an important phenomenon near the barrier layer in sputter-deposited metal-oxide/Ag/metal-oxide low-emissivity (low-e) coatings. Barrier layers generally are deposited on the Ag layer to prevent its degradation during subsequent 02 reactive sputtering. Both individual layers and complete stacks were studied. In addition, the thermal stability of plasma-oxidized Ag was examined. There are several important findings for the individual layers. Ag oxidizes rapidly in the plasma, forming Ag≍1.70 after complete reaction. Relative to the original Ag, the 9ide has -l.7 times greater thick-ness, >10 times higher electrical resistiv-ity (p), and increased surface roughness. Zn oxidizes slowly, at only -1% to 0.1% times the rate for Ag, and is thus more difficult to characterize. The results for individual layers are discussed as they relate to practical pro-perties of low-e stacks: the difficulty of obtaining complete barrier layer oxidation without partially degrading the Ag layer as well as the effects of heat treatment and aging.

Functional and Multifunctional Polymers: Materials for Smart Structures

NASA Technical Reports Server (NTRS)

Arnold, S.; Pratt, L. M.; Li, J.; Wuagaman, M.; Khan, I. M.

1996-01-01

The ultimate goal of the research in smart structures and smart materials is the development of a new generation of products/devices which will perform better than products/devices built from passive materials. There are a few examples of multilayer polymer systems which function as smart structures, e.g. a synthetic muscle which is a multilayer assembly of a poly(ethylene) layer, a gold layer, and a poly(pyrrole) layer immersed in a liquid electrolyte. Oxidation and reductions of the active pyrrole layer causes the assembly to reversibly deflect and mimic biological muscles. The drawback of such a setup is slow response times and the use of a liquid electrolyte. We have developed multifunctional polymers which will eliminate the use of a liquid electrolyte, and also because the functionalities of the polymers are within a few hundred angstroms, an improved response time to changes in the external field should be possible. Such multifunctional polymers may be classified as the futuristic 'smart materials.' These materials are composed of a number of different functionalities which work in a synergistic fashion to function as a device. The device performs on the application of an external field and such multifunctional polymers may be scientifically labeled as 'field responsive polymers.' Our group has undertaken a systematic approach to develop functional and multifunctional polymers capable of functioning as field responsive polymers. Our approach utilizes multicomponent polymer systems (block copolymers and graft copolymers), the strategy involves the preparation of block or graft copolymers where the functionalities are limited to different phases in a microphase separated system. Depending on the weight (or volume) fractions of each of the components, different microstructures are possible. And, because of the intimate contact between the functional components, an increase in the synergism between the functionalities may be observed. In this presentation, three examples of multifunctional polymers developed in our labs will be reported. The first class of multifunctional polymers are the microphase separated mixed (ionic and electronic) conducting or MIEC block copolymers. The second class being developed in our labs are the biocompatible conductive materials and the conductive fluids. The final class may be considered microwave active smart polymers.

High-concentration graphene dispersion stabilized by block copolymers in ethanol.

PubMed

Perumal, Suguna; Lee, Hyang Moo; Cheong, In Woo

2017-07-01

This article describes a comprehensive study for the preparation of graphene dispersions by liquid-phase exfoliation using amphiphilic diblock copolymers; poly(ethylene oxide)-block-poly(styrene) (PEO-b-PS), poly(ethylene oxide)-block-poly(4-vinylpyridine) (PEO-b-PVP), and poly(ethylene oxide)-block-poly(pyrenemethyl methacrylate) (PEO-b-PPy) with similar block lengths. Block copolymers were prepared from PEO using the Steglich coupling reaction followed by reversible addition-fragmentation chain transfer (RAFT) polymerization. Graphite platelets (G) and reduced graphene oxide (rGO) were used as graphene sources. The dispersion stability of graphene in ethanol was comparatively investigated by on-line turbidity, and the graphene concentration in the dispersions was determined gravimetrically. Our results revealed that the graphene dispersions with PEO-b-PVP were much more stable and included graphene with fewer defects than that with PEO-b-PS or PEO-b-PPy, as confirmed by turbidity and Raman analyses. Gravimetry confirmed that graphene concentrations up to 1.7 and 1.8mg/mL could be obtained from G and rGO dispersions, respectively, using PEO-b-PVP after one week. Distinctions in adhesion forces of PS, VP, PPy block units with graphene surface and the variation in solubility of the block copolymers in ethanol medium significantly affected the stability of the graphene dispersion. Copyright © 2017 Elsevier Inc. All rights reserved.

Depth Profiling Analysis of Aluminum Oxidation During Film Deposition in a Conventional High Vacuum System

NASA Technical Reports Server (NTRS)

Kim, Jongmin; Weimer, Jeffrey J.; Zukic, Muamer; Torr, Douglas G.

1994-01-01

The oxidation of aluminum thin films deposited in a conventional high vacuum chamber has been investigated using x-ray photoelectron spectroscopy (XPS) and depth profiling. The state of the Al layer was preserved by coating it with a protective MgF2 layer in the deposition chamber. Oxygen concentrations in the film layers were determined as a function of sputter time (depth into the film). The results show that an oxidized layer is formed at the start of Al deposition and that a less extensively oxidized Al layer is deposited if the deposition rate is fast. The top surface of the Al layer oxidizes very quickly. This top oxidized layer may be thicker than has been previously reported by optical methods. Maximum oxygen concentrations measured by XPS at each Al interface are related to pressure to rate ratios determined during the Al layer deposition.

Self assembled multi-layer nanocomposite of graphene and metal oxide materials

DOEpatents

Liu, Jun; Aksay, Ilhan A; Choi, Daiwon; Kou, Rong; Nie, Zimin; Wang, Donghai; Yang, Zhenguo

2013-10-22

Nanocomposite materials having at least two layers, each layer consisting of one metal oxide bonded to at least one graphene layer were developed. The nanocomposite materials will typically have many alternating layers of metal oxides and graphene layers, bonded in a sandwich type construction and will be incorporated into an electrochemical or energy storage device.

Self assembled multi-layer nanocomposite of graphene and metal oxide materials

DOEpatents

Liu, Jun; Aksay, Ilhan A; Choi, Daiwon; Kou, Rong; Nie, Zimin; Wang, Donghai; Yang, Zhenguo

2015-04-28

Nanocomposite materials having at least two layers, each layer consisting of one metal oxide bonded to at least one graphene layer were developed. The nanocomposite materials will typically have many alternating layers of metal oxides and graphene layers, bonded in a sandwich type construction and will be incorporated into an electrochemical or energy storage device.

Self assembled multi-layer nanocomposite of graphene and metal oxide materials

DOEpatents

Liu, Jun; Choi, Daiwon; Kou, Rong; Nie, Zimin; Wang, Donghai; Yang, Zhenguo

2014-09-16

Nanocomposite materials having at least two layers, each layer consisting of one metal oxide bonded to at least one graphene layer were developed. The nanocomposite materials will typically have many alternating layers of metal oxides and graphene layers, bonded in a sandwich type construction and will be incorporated into an electrochemical or energy storage device.

Doxorubicin-loaded micelles of reverse poly(butylene oxide)-poly(ethylene oxide)-poly(butylene oxide) block copolymers as efficient "active" chemotherapeutic agents.

PubMed

Cambón, A; Rey-Rico, A; Mistry, D; Brea, J; Loza, M I; Attwood, D; Barbosa, S; Alvarez-Lorenzo, C; Concheiro, A; Taboada, P; Mosquera, V

2013-03-10

Five reverse poly(butylene oxide)-poly(ethylene oxide)-poly(butylene oxide) block copolymers, BOnEOmBOn, with BO ranging from 8 to 21 units and EO from 90 to 411 were synthesized and evaluated as efficient chemotherapeutic drug delivery nanocarriers and inhibitors of the P-glycoprotein (P-gp) efflux pump in a multidrug resistant (MDR) cell line. The copolymers were obtained by reverse polymerization of poly(butylene oxide), which avoids transfer reaction and widening of the EO block distribution, commonly found in commercial poly(ethylene oxide)-poly(propylene oxide) block copolymers (poloxamers). BOnEOmBOn copolymers formed spherical micelles of 10-40 nm diameter at lower concentrations (one order of magnitude) than those of equivalent poloxamers. The influence of copolymer block lengths and BO/EO ratios on the solubilization capacity and protective environment for doxorubicin (DOXO) was investigated. Micelles showed drug loading capacity ranging from ca. 0.04% to 1.5%, more than 150 times the aqueous solubility of DOXO, and protected the cargo from hydrolysis for more than a month due to their greater colloidal stability in solution. Drug release profiles at various pHs, and the cytocompatibility and cytotoxicity of the DOXO-loaded micelles were assessed in vitro. DOXO loaded in the polymeric micelles accumulated more slowly inside the cells than free DOXO due to its sustained release. All copolymers were found to be cytocompatible, with viability extents larger than 95%. In addition, the cytotoxicity of DOXO-loaded micelles was higher than that observed for free drug solutions in a MDR ovarian NCI-ADR-RES cell line which overexpressed P-gp. The inhibition of the P-gp efflux pump by some BOnEOmBOn copolymers, similar to that measured for the common P-gp inhibitor verapamil, favored the retention of DOXO inside the cell increasing its cytotoxic activity. Therefore, poly(butylene oxide)-poly(ethylene oxide) block copolymers offer interesting features as cell response modifiers to complement their role as efficient nanocarriers for cancer chemotherapy. Copyright © 2013 Elsevier B.V. All rights reserved.

A method of the up or down layer development of class II oil reservoirs

NASA Astrophysics Data System (ADS)

Wang, Fulin; Zhao, Yunfei; Fang, Yanjun; Yang, Tao; Gui, Dongxu; Wang, Gang; Feng, Chengcheng

2018-06-01

During the 13th five-year period, class II reservoirs of DaQing Oilfield first layer series development will be fully completed, secondary up or down layer development is facing new well drilling or the use of old we ll pattern network method chosen, need to determine development mode of oil block. In this paper, the system economy model is established, the up and down oil layer of the block is considered as one system, and through the comparison of the two models that new well drilling or the use of old well pattern, we can determine the development mode of the block. And take b1ddd block as an example, determine the block need to use what method to develop in different oil prices. Result show when the oil price is 40/bbl, using exiting well to production, when oil price is 70/bbl., using new drilling development model. The method to fill the theory and methodology on selection about reservoir development mode, can provide technical support for DaQing Oilfield the 14th five-year planning and long-term planning.

Planar ceramic membrane assembly and oxidation reactor system

DOEpatents

Carolan, Michael Francis; Dyer, legal representative, Kathryn Beverly; Wilson, Merrill Anderson; Ohm, Ted R.; Kneidel, Kurt E.; Peterson, David; Chen, Christopher M.; Rackers, Keith Gerard; Dyer, deceased, Paul Nigel

2007-10-09

Planar ceramic membrane assembly comprising a dense layer of mixed-conducting multi-component metal oxide material, wherein the dense layer has a first side and a second side, a porous layer of mixed-conducting multi-component metal oxide material in contact with the first side of the dense layer, and a ceramic channeled support layer in contact with the second side of the dense layer. The planar ceramic membrane assembly can be used in a ceramic wafer assembly comprising a planar ceramic channeled support layer having a first side and a second side; a first dense layer of mixed-conducting multi-component metal oxide material having an inner side and an outer side, wherein the inner side is in contact with the first side of the ceramic channeled support layer; a first outer support layer comprising porous mixed-conducting multi-component metal oxide material and having an inner side and an outer side, wherein the inner side is in contact with the outer side of the first dense layer; a second dense layer of mixed-conducting multi-component metal oxide material having an inner side and an outer side, wherein the inner side is in contact with the second side of the ceramic channeled layer; and a second outer support layer comprising porous mixed-conducting multi-component metal oxide material and having an inner side and an outer side, wherein the inner side is in contact with the outer side of the second dense layer.

Planar ceramic membrane assembly and oxidation reactor system

DOEpatents

Carolan, Michael Francis; Dyer, legal representative, Kathryn Beverly; Wilson, Merrill Anderson; Ohrn, Ted R.; Kneidel, Kurt E.; Peterson, David; Chen, Christopher M.; Rackers, Keith Gerard; Dyer, Paul Nigel

2009-04-07

Planar ceramic membrane assembly comprising a dense layer of mixed-conducting multi-component metal oxide material, wherein the dense layer has a first side and a second side, a porous layer of mixed-conducting multi-component metal oxide material in contact with the first side of the dense layer, and a ceramic channeled support layer in contact with the second side of the dense layer. The planar ceramic membrane assembly can be used in a ceramic wafer assembly comprising a planar ceramic channeled support layer having a first side and a second side; a first dense layer of mixed-conducting multi-component metal oxide material having an inner side and an outer side, wherein the inner side is in contact with the first side of the ceramic channeled support layer; a first outer support layer comprising porous mixed-conducting multi-component metal oxide material and having an inner side and an outer side, wherein the inner side is in contact with the outer side of the first dense layer; a second dense layer of mixed-conducting multi-component metal oxide material having an inner side and an outer side, wherein the inner side is in contact with the second side of the ceramic channeled layer; and a second outer support layer comprising porous mixed-conducting multi-component metal oxide material and having an inner side and an outer side, wherein the inner side is in contact with the outer side of the second dense layer.

Preparation and characterization of mono- and multilayer films of polymerizable 1,2-polybutadiene using the Langmuir-Blodgett technique.

PubMed

Hitrik, Maria; Gutkin, Vitaly; Lev, Ovadia; Mandler, Daniel

2011-10-04

The essence of this study is to apply the Langmuir-Blodgett (LB) technique for assembling asymmetric membranes. Accordingly, Langmuir films of a (further) polymerizable polymer, 1,2-polybutadiene (1,2-pbd), were studied and transferred onto different solid supports, such as gold, indium tin oxide (ITO), and silicon. The layers were characterized both at the air/water interface as well as on different substrates using numerous methods including cyclic voltammetry, impedance spectroscopy, spectroscopic ellipsometry, atomic force microscopy, X-ray photoelectron spectroscopy, and reflection-absorption Fourier transform infrared spectroscopy. The Langmuir films were stable at the air-water interface as long as they were not exposed to UV irradiation. The LB films formed disorganized layers, which gradually blocked the permeation of different species with increasing the number of deposited layers. The thickness was ca. 4-7 Å per layer. Irradiating the Langmuir films caused their cross-linking at the air-water interface. Furthermore, we took advantage of the reactivity of the double bond of the LB films on the solid supports and graft polymerized acrylic acid on top of the 1,2-pbd layers. This approach is the basis of the formation of an asymmetric membrane that requires different porosity on both of its sides. © 2011 American Chemical Society

4P-NPD ultra-thin films as efficient exciton blocking layers in DBP/C70 based organic solar cells

NASA Astrophysics Data System (ADS)

Patil, Bhushan R.; Liu, Yiming; Qamar, Talha; Rubahn, Horst-Günter; Madsen, Morten

2017-09-01

Exciton blocking effects from ultra-thin layers of N,N‧-di-1-naphthalenyl-N,N‧-diphenyl [1,1‧:4‧,1″:4″,1‴-quaterphenyl]-4,4‴-diamine (4P-NPD) were investigated in small molecule-based inverted organic solar cells (OSCs) using tetraphenyldibenzoperiflanthene as the electron donor material and fullerene (C70) as the electron acceptor material. The short-circuit current density (J SC) and power conversion efficiency (PCE) of the optimized OSCs with 0.7 nm thick 4P-NPD were approximately 16% and 24% higher, respectively, compared to reference devices without exciton blocking layers (EBLs). Drift diffusion-based device modeling was conducted to model the full current density-voltage (JV) characteristics and external quantum efficiency spectrum of the OSCs, and photoluminescence measurements were conducted to investigate the exciton blocking effects with increasing thicknesses of the 4P-NPD layer. Importantly, coupled optical and electrical modeling studies of the device behaviors and exciton generation rates and densities in the active layer for different 4P-NPD layer thicknesses were conducted, in order to gain a complete understanding of the observed increase in PCE for 4P-NPD layer thicknesses up to 1 nm, and the observed decrease in PCE for layer thicknesses beyond 1 nm. This work demonstrates a route for guiding the integration of EBLs in OSC devices.

Buried oxide layer in silicon

DOEpatents

Sadana, Devendra Kumar; Holland, Orin Wayne

2001-01-01

A process for forming Silicon-On-Insulator is described incorporating the steps of ion implantation of oxygen into a silicon substrate at elevated temperature, ion implanting oxygen at a temperature below 200.degree. C. at a lower dose to form an amorphous silicon layer, and annealing steps to form a mixture of defective single crystal silicon and polycrystalline silicon or polycrystalline silicon alone and then silicon oxide from the amorphous silicon layer to form a continuous silicon oxide layer below the surface of the silicon substrate to provide an isolated superficial layer of silicon. The invention overcomes the problem of buried isolated islands of silicon oxide forming a discontinuous buried oxide layer.

The impact of adsorption on the localization of spins in graphene oxide and reduced graphene oxide, observed with electron paramagnetic resonance

NASA Astrophysics Data System (ADS)

Kempiński, Mateusz; Florczak, Patryk; Jurga, Stefan; Śliwińska-Bartkowiak, Małgorzata; Kempiński, Wojciech

2017-08-01

We report the observations of electronic properties of graphene oxide and reduced graphene oxide, performed with electron paramagnetic resonance technique in a broad temperature range. Both materials were examined in pure form and saturated with air, helium, and heavy water molecules. We show that spin localization strongly depends on the type and amount of molecules adsorbed at the graphene layer edges (and possible in-plane defects). Physical and chemical states of edges play crucial role in electrical transport within graphene-based materials, with hopping as the leading mechanism of charge carrier transport. Presented results are a good basis to understand the electronic properties of other carbon structures made of graphene-like building blocks. Most active carbons show some degree of functionalization and are known of having good adsorptive properties; thus, controlling both phenomena is important for many applications. Sample treatment with temperature, vacuum, and various adsorbents allowed for the observation of a possible metal-insulator transition and sorption pumping effects. The influence of adsorption on the localization phenomena in graphene would be very important if to consider the graphene-based material as possible candidates for the future spintronics that works in ambient conditions.

Comparing blends and blocks: Synthesis of partially fluorinated diblock polythiophene copolymers to investigate the thermal stability of optical and morphological properties

PubMed Central

Boufflet, Pierre; Wood, Sebastian; Wade, Jessica; Fei, Zhuping; Kim, Ji-Seon

2016-01-01

Summary The microstructure of the active blend layer has been shown to be a critically important factor in the performance of organic solar devices. Block copolymers provide a potentially interesting avenue for controlling this active layer microstructure in solar cell blends. Here we explore the impact of backbone fluorination in block copolymers of poly(3-octyl-4-fluorothiophene)s and poly(3-octylthiophene) (F-P3OT-b-P3OT). Two block co-polymers with varying block lengths were prepared via sequential monomer addition under Kumada catalyst transfer polymerisation (KCTP) conditions. We compare the behavior of the block copolymer to that of the corresponding homopolymer blends. In both types of system, we find the fluorinated segments tend to dominate the UV–visible absorption and molecular vibrational spectral features, as well as the thermal behavior. In the block copolymer case, non-fluorinated segments appear to slightly frustrate the aggregation of the more fluorinated block. However, in situ temperature dependent Raman spectroscopy shows that the intramolecular order is more thermally stable in the block copolymer than in the corresponding blend, suggesting that such materials may be interesting for enhanced thermal stability of organic photovoltaic active layers based on similar systems. PMID:27829922

Effects of nitrogen incorporation in HfO(2) grown on InP by atomic layer deposition: an evolution in structural, chemical, and electrical characteristics.

PubMed

Kang, Yu-Seon; Kim, Dae-Kyoung; Kang, Hang-Kyu; Jeong, Kwang-Sik; Cho, Mann-Ho; Ko, Dae-Hong; Kim, Hyoungsub; Seo, Jung-Hye; Kim, Dong-Chan

2014-03-26

We investigated the effects of postnitridation on the structural characteristics and interfacial reactions of HfO2 thin films grown on InP by atomic layer deposition (ALD) as a function of film thickness. By postdeposition annealing under NH3 vapor (PDN) at 600 °C, an InN layer formed at the HfO2/InP interface, and ionized NHx was incorporated in the HfO2 film. We demonstrate that structural changes resulting from nitridation of HfO2/InP depend on the film thickness (i.e., a single-crystal interfacial layer of h-InN formed at thin (2 nm) HfO2/InP interfaces, whereas an amorphous InN layer formed at thick (>6 nm) HfO2/InP interfaces). Consequently, the tetragonal structure of HfO2 transformed into a mixture structure of tetragonal and monoclinic because the interfacial InN layer relieved interfacial strain between HfO2 and InP. During postdeposition annealing (PDA) in HfO2/InP at 600 °C, large numbers of oxidation states were generated as a result of interfacial reactions between interdiffused oxygen impurities and out-diffused InP substrate elements. However, in the case of the PDN of HfO2/InP structures at 600 °C, nitrogen incorporation in the HfO2 film effectively blocked the out-diffusion of atomic In and P, thus suppressing the formation of oxidation states. Accordingly, the number of interfacial defect states (Dit) within the band gap of InP was significantly reduced, which was also supported by DFT calculations. Interfacial InN in HfO2/InP increased the electron-barrier height to ∼0.6 eV, which led to low-leakage-current density in the gate voltage region over 2 V.

Method for implementation of back-illuminated CMOS or CCD imagers

NASA Technical Reports Server (NTRS)

Pain, Bedabrata (Inventor)

2008-01-01

A method for implementation of back-illuminated CMOS or CCD imagers. An oxide layer buried between silicon wafer and device silicon is provided. The oxide layer forms a passivation layer in the imaging structure. A device layer and interlayer dielectric are formed, and the silicon wafer is removed to expose the oxide layer.

Middle Stone Age stratigraphy and excavations at Die Kelders Cave 1 (Western Cape Province, South Africa): the 1992, 1993, and 1995 field seasons.

PubMed

Marean, C W; Goldberg, P; Avery, G; Grine, F E; Klein, R G

2000-01-01

Die Kelders Cave 1, first excavated under the direction of Franz Schweitzer in 1969-1973, was re-excavated between 1992 and 1995 by a combined team from the South African Museum, SUNY at Stony Brook, and Stanford University. These renewed excavations enlarged the artefactual and faunal samples from the inadequately sampled and less intensively excavated lower Middle Stone Age (MSA) layers, increased our understanding of the complex site formation processes within the cave, enlarged the hominid sample from the MSA deposits, and generated ESR, TL, and OSL dates for the MSA layers. Importantly, these new excavations dramatically improved our comprehension of the vertical and lateral characteristics of the MSA stratigraphy. Surface plotting of the MSA layers has led to the identification of at least two major zones of subsidence that significantly warped the layers, draping some along the eroding surface contours of major blocks of fallen limestone roof rock. A third zone of subsidence is probably present in the older excavations. Dramatic roof falls of very large limestone blocks occurred at least twice-once in the middle of Layer 4/5 where the roof blocks were only slightly weathered after collapse, and at the top of Layer 6 where the blocks weathered heavily after collapse, producing a zone of decomposed rock around the blocks. Many of the sandy strata are cut by small and localized faults and slippages. All of the strata documented by Schweitzer's excavations are present throughout the exposed area to the west of his excavated area, where many of them thicken and become more complex. Layer 6, the thickest MSA layer, becomes less diagenetically altered and compressed to the west. Copyright 2000 Academic Press.

Neutronic reactor construction

DOEpatents

Huston, Norman E.

1976-07-06

1. A neutronic reactor comprising a moderator including horizontal layers formed of horizontal rows of graphite blocks, alternate layers of blocks having the rows extending in one direction, the remaining alternate layers having the rows extending transversely to the said one direction, alternate rows of blocks in one set of alternate layers having longitudinal ducts, the moderator further including slotted graphite tubes positioned in the ducts, the reactor further comprising an aluminum coolant tube positioned within the slotted tube in spaced relation thereto, bodies of thermal-neutron-fissionable material, and jackets enclosing the bodies and being formed of a corrosion-resistant material having a low neutron-capture cross section, the bodies and jackets being positioned within the coolant tube so that the jackets are spaced from the coolant tube.

Oxide film on metal substrate reduced to form metal-oxide-metal layer structure

NASA Technical Reports Server (NTRS)

Youngdahl, C. A.

1967-01-01

Electrically conductive layer of zirconium on a zirconium-oxide film residing on a zirconium substrate is formed by reducing the oxide in a sodium-calcium solution. The reduced metal remains on the oxide surface as an adherent layer and seems to form a barrier that inhibits further reaction.

Articles including thin film monolayers and multilayers

DOEpatents

Li, DeQuan; Swanson, Basil I.

1995-01-01

Articles of manufacture including: (a) a base substrate having an oxide surface layer, and a multidentate ligand, capable of binding a metal ion, attached to the oxide surface layer of the base substrate, (b) a base substrate having an oxide surface layer, a multidentate ligand, capable of binding a metal ion, attached to the oxide surface layer of the base substrate, and a metal species attached to the multidentate ligand, (c) a base substrate having an oxide surface layer, a multidentate ligand, capable of binding a metal ion, attached to the oxide surface layer of the base substrate, a metal species attached to the multidentate ligand, and a multifunctional organic ligand attached to the metal species, and (d) a base substrate having an oxide surface layer, a multidentate ligand, capable of binding a metal ion, attached to the oxide surface layer of the base substrate, a metal species attached to the multidentate ligand, a multifunctional organic ligand attached to the metal species, and a second metal species attached to the multifunctional organic ligand, are provided, such articles useful in detecting the presence of a selected target species, as nonliear optical materials, or as scavengers for selected target species.

Effects of anodic oxidation parameters on a modified titanium surface.

PubMed

Park, Il Song; Lee, Min Ho; Bae, Tae Sung; Seol, Kyeong Won

2008-02-01

Anodic oxidation is an electrochemical treatment that can be used to control the thickness of an oxide layer formed on a titanium surface. This procedure has the advantage of allowing the ions contained in an electrolyte to deposit onto the oxide layer. The characteristics of a layer treated with anodic oxidation can vary according to the type and concentration of the electrolytes as well as the processing variables used during anodic oxidation. In this study, the constant electrolyte for anodic oxidation was a mixed solution containing 0.02 M DL-alpha-glycerophosphate disodium salt and 0.2M calcium acetate. Anodic oxidation was carried out at different voltages, current densities, and duration of anodic oxidation. The results showed that the current density and variation in the duration of anodic oxidation did not have a large effect on the change in the characteristics of the layer. On the other hand, the size of the micropores was increased with increasing voltage of anodic oxidation, and anatase and rutile phases were found to co-exist in the porous titanium dioxide layer. In addition, the thickness of the oxide layer on titanium and the characteristic of corrosion resistance increased with increasing voltage. The MTT test showed that the cell viability was increased considerably as a result of anodic oxidation. The anodizing voltage is an important parameter that determines the characteristics of the anodic oxide layer of titanium. (c) 2007 Wiley Periodicals, Inc.

Thin film photovoltaic devices with a minimally conductive buffer layer

DOEpatents

Barnes, Teresa M.; Burst, James

2016-11-15

A thin film photovoltaic device (100) with a tunable, minimally conductive buffer (128) layer is provided. The photovoltaic device (100) may include a back contact (150), a transparent front contact stack (120), and an absorber (140) positioned between the front contact stack (120) and the back contact (150). The front contact stack (120) may include a low resistivity transparent conductive oxide (TCO) layer (124) and a buffer layer (128) that is proximate to the absorber layer (140). The photovoltaic device (100) may also include a window layer (130) between the buffer layer (128) and the absorber (140). In some cases, the buffer layer (128) is minimally conductive, with its resistivity being tunable, and the buffer layer (128) may be formed as an alloy from a host oxide and a high-permittivity oxide. The high-permittivity oxide may further be chosen to have a bandgap greater than the host oxide.

Estimation of carrier mobility and charge behaviors of organic semiconductor films in metal-insulator-semiconductor diodes consisting of high-k oxide/organic semiconductor double layers

NASA Astrophysics Data System (ADS)

Chosei, Naoya; Itoh, Eiji

2018-02-01

We have comparatively studied the charge behaviors of organic semiconductor films based on charge extraction by linearly increasing voltage in a metal-insulator-semiconductor (MIS) diode structure (MIS-CELIV) and by classical capacitance-voltage measurement. The MIS-CELIV technique allows the selective measurement of electron and hole mobilities of n- and p-type organic films with thicknesses representative of those of actual devices. We used an anodic oxidized sputtered Ta or Hf electrode as a high-k layer, and it effectively blocked holes at the insulator/semiconductor interface. We estimated the hole mobilities of the polythiophene derivatives regioregular poly(3-hexylthiophene) (P3HT) and poly(3,3‧‧‧-didodecylquarterthiophene) (PQT-12) before and after heat treatment in the ITO/high-k/(thin polymer insulator)/semiconductor/MoO3/Ag device structure. The hole mobility of PQT-12 was improved from 1.1 × 10-5 to 2.1 × 10-5 cm2 V-1 s-1 by the heat treatment of the device at 100 °C for 30 min. An almost two orders of magnitude higher mobility was obtained in MIS diodes with P3HT as the p-type layer. We also determined the capacitance from the displacement current in MIS diodes at a relatively low-voltage sweep, and it corresponded well to the classical capacitance-voltage and frequency measurement results.

Total Internal Reflection Ultrasonic Sensor for Detection of Subsurface Flaws: Research into Underlying Physics

DTIC Science & Technology

2014-11-24

layere, which was a thin plate bonded to a solid block of fused quartz. The plate was also made of fused quartz so the entire “assembly” may be... thin plate and a block of fused quartz. Residues of the lacquer Quartz plate Metal strip Epoxy layer Block of quartz Fig. 2.4.4. Specimen...depth therefore it was made as a combination of two pieces of fused quartz, a block and a thin plate , and a foreign inclusion between them. The plate was

Mechanical Properties of Degraded PMR-15 Resin

NASA Technical Reports Server (NTRS)

Tsuji, Luis C.; McManus, Hugh L.; Bowles, Kenneth J.

1998-01-01

Thermo-oxidative aging produces a non-uniform degradation state in PMR-15 resin. A surface layer, usually attributed to oxidative degradation, forms. This surface layer has different properties from the inner material. A set of material tests was designed to separate the properties of the oxidized surface layer from the properties of interior material. Test specimens were aged at 316 C in either air or nitrogen, for durations of up to 800 hours. The thickness of the oxidized surface layer in air aged specimens, and the shrinkage and Coefficient of Thermal Expansion (CTE) of nitrogen aged specimens were measured directly. Four-point-bend tests were performed to determine modulus of both the oxidized surface layer and the interior material. Bimaterial strip specimens consisting of oxidized surface material and unoxidized interior material were constructed and used to determine surface layer shrinkage and CTE. Results confirm that the surface layer and core materials have substantially different properties.

Method of making an apparatus for transpiration cooling of substrates such as turbine airfoils

DOEpatents

Alvin, Mary Anne; Anderson, Iver; Heidlof, Andy; White, Emma; McMordie, Bruce

2017-02-28

A method and apparatus for generating transpiration cooling using an oxidized porous HTA layer metallurgically bonded to a substrate having micro-channel architectures. The method and apparatus generates a porous HTA layer by spreading generally spherical HTA powder particles on a substrate, partially sintering under O.sub.2 vacuum until the porous HTA layer exhibits a porosity between 20% and 50% and a neck size ratio between 0.1 and 0.5, followed by a controlled oxidation generating an oxidation layer of alumina, chromia, or silica at a thickness of about 20 to about 500 nm. In particular embodiments, the oxidized porous HTA layer and the substrate comprise Ni as a majority element. In other embodiments, the oxidized porous HTA layer and the substrate further comprise Al, and in additional embodiments, the oxidized porous HTA layer and the substrate comprise .gamma.-Ni+.gamma.'-Ni.sub.3Al.

Organic photosensitive devices using subphthalocyanine compounds

DOEpatents

Rand, Barry [Princeton, NJ; Forrest, Stephen R [Ann Arbor, MI; Mutolo, Kristin L [Hollywood, CA; Mayo, Elizabeth [Alhambra, CA; Thompson, Mark E [Anaheim Hills, CA

2011-07-05

An organic photosensitive optoelectronic device, having a donor-acceptor heterojunction of a donor-like material and an acceptor-like material and methods of making such devices is provided. At least one of the donor-like material and the acceptor-like material includes a subphthalocyanine, a subporphyrin, and/or a subporphyrazine compound; and/or the device optionally has at least one of a blocking layer or a charge transport layer, where the blocking layer and/or the charge transport layer includes a subphthalocyanine, a subporphyrin, and/or a subporphyrazine compound.

Investigations on spruce decline in the Bavarian forest.

PubMed

Osswald, W F; Elstner, E F

1987-01-01

The primary damaging reactions in spruce needles may operate as follows: 1) Trees under "stress" produce the plant hormone ethylene. 2) Ethylene and ozone react extremely fast forming hydrogen peroxide and formaldehyde, compounds which may damage the wax layer. 3) Ozone as a very aggressive oxidant will inactivate membrane bound enzymes through oxidation of their thiol groups. Thus the translocation of sugars from the chloroplast into the phloem may be inhibited or blocked. The result will be an "over-reduction" of the electron transport chain resulting in the formation of reactive oxygen species in the light. These reactive oxygen species will induce lipid peroxidation and pigment co-oxidation. 4) The visible effects are bleached needles and an impairment of structural resistance against fungal infections. 5) In addition ozone will directly reduce the content of antifungal compounds such as p-HAP. 6) Furthermore p-HAP may be involved in the bleaching reaction after its release from picein. 7) Finally, fungi may penetrate the needles and eventually grow faster in bleached needles. Infected needles will become necrotic and abscise.

Method of forming buried oxide layers in silicon

DOEpatents

Sadana, Devendra Kumar; Holland, Orin Wayne

2000-01-01

A process for forming Silicon-On-Insulator is described incorporating the steps of ion implantation of oxygen into a silicon substrate at elevated temperature, ion implanting oxygen at a temperature below 200.degree. C. at a lower dose to form an amorphous silicon layer, and annealing steps to form a mixture of defective single crystal silicon and polycrystalline silicon or polycrystalline silicon alone and then silicon oxide from the amorphous silicon layer to form a continuous silicon oxide layer below the surface of the silicon substrate to provide an isolated superficial layer of silicon. The invention overcomes the problem of buried isolated islands of silicon oxide forming a discontinuous buried oxide layer.

Atomic layer deposition of insulating nitride interfacial layers for germanium metal oxide semiconductor field effect transistors with high-κ oxide/tungsten nitride gate stacks

NASA Astrophysics Data System (ADS)

Kim, Kyoung H.; Gordon, Roy G.; Ritenour, Andrew; Antoniadis, Dimitri A.

2007-05-01

Atomic layer deposition (ALD) was used to deposit passivating interfacial nitride layers between Ge and high-κ oxides. High-κ oxides on Ge surfaces passivated by ultrathin (1-2nm) ALD Hf3N4 or AlN layers exhibited well-behaved C-V characteristics with an equivalent oxide thickness as low as 0.8nm, no significant flatband voltage shifts, and midgap density of interface states values of 2×1012cm-1eV-1. Functional n-channel and p-channel Ge field effect transistors with nitride interlayer/high-κ oxide/metal gate stacks are demonstrated.

Oxidation of InP nanowires: a first principles molecular dynamics study.

PubMed

Berwanger, Mailing; Schoenhalz, Aline L; Dos Santos, Cláudia L; Piquini, Paulo

2016-11-16

InP nanowires are candidates for optoelectronic applications, and as protective capping layers of III-V core-shell nanowires. Their surfaces are oxidized under ambient conditions which affects the nanowire physical properties. The majority of theoretical studies of InP nanowires, however, do not take into account the oxide layer at their surfaces. In this work we use first principles molecular dynamics electronic structure calculations to study the first steps in the oxidation process of a non-saturated InP nanowire surface as well as the properties of an already oxidized surface of an InP nanowire. Our calculations show that the O 2 molecules dissociate through several mechanisms, resulting in incorporation of O atoms into the surface layers. The results confirm the experimental observation that the oxidized layers become amorphous but the non-oxidized core layers remain crystalline. Oxygen related bonds at the oxidized layers introduce defective levels at the band gap region, with greater contributions from defects involving In-O and P-O bonds.

Isolation and characterization of nanosheets containing few layers of the Aurivillius family of oxides and metal-organic compounds

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sreedhara, M.B.; Prasad, B.E.; Moirangthem, Monali

2015-04-15

Nanosheets containing few-layers of ferroelectric Aurivillius family of oxides, Bi{sub 2}A{sub n−1}B{sub n}O{sub 3n+3} (where A=Bi{sup 3+}, Ba{sup 2+} etc. and B=Ti{sup 4+}, Fe{sup 3+} etc.) with n=3, 4, 5, 6 and 7 have been prepared by reaction with n-butyllithium, followed by exfoliation in water. The few-layer samples have been characterized by Tyndall cones, atomic force microscopy, optical spectroscopy and other techniques. The few-layer species have a thickness corresponding to a fraction of the c-parameter along which axis the perovskite layers are stacked. Magnetization measurements have been carried out on the few-layer samples containing iron. Few-layer species of a fewmore » layered metal-organic compounds have been obtained by ultrasonication and characterized by Tyndall cones, atomic force microscopy, optical spectroscopy and magnetic measurements. Significant changes in the optical spectra and magnetic properties are found in the few-layer species compared to the bulk samples. Few-layer species of the Aurivillius family of oxides may find uses as thin layer dielectrics in photovoltaics and other applications. - Graphical abstract: Exfoliation of the layered Aurivillius oxides into few-layer nanosheets by chemical Li intercalation using n-BuLi followed by reaction in water. Exfoliation of the layered metal-organic compounds into few-layer nanosheets by ultrasonication. - Highlights: • Few-layer nanosheets of Aurivillius family of oxides with perovskite layers have been generated by lithium intercalation. • Few-layer nanosheets of few layered metal-organic compounds have been generated by ultrasonication. • Few-layer nanosheets of the Aurivillius oxides have been characterized by AFM, TEM and optical spectroscopy. • Aurivillius oxides containing Fe show layer dependent magnetic properties. • Exfoliated few-layer metal-organic compounds show changes in spectroscopic and magnetic properties compared with bulk materials.« less

Growth of micrometric oxide layers for the study of metallic surfaces decontamination by laser

NASA Astrophysics Data System (ADS)

Carvalho, Luisa; Pacquentin, Wilfried; Tabarant, Michel; Maskrot, Hicham; Semerok, Alexandre

2017-09-01

The nuclear industry produces a wide range of radioactive waste in term of level of hazard, contaminants and material. For metallic equipment like steam generators, the radioactivity is mainly located in the oxide surface. In order to study and develop techniques for dismantling and for decontamination in a safe way, it is important to have access to oxide layers with a representative distribution of non-radioactive contaminants. We propose a method of formation of oxide layer on stainless steel 304L with europium (Eu) as contaminant marker. In this method, an Eu-solution is sprayed on the stainless steel samples. The specimen are firstly treated with a pulsed nanosecond laser and secondly the steel samples are exposed to a 600°C furnace for various durations in order to grow an oxide layer. The oxide structure and in-depth distribution of Eu in the oxide layer are analysed by scanning electron microscopy coupled with energy dispersive X-ray microanalyzer, and by glow discharge optical emission or mass spectrometry. The oxide layers were grown to thicknesses in the range of 200 nm to 4.5 μm regarding to the laser treatment parameters and the heating duration. These contaminated oxides have a `duplex structure' with a mean weight percentage of 0.5% of europium in the volume of the oxide layer. It appears that europium implementation prevents the oxide growth by furnace but has no impact on laser heating. These oxide layers are used to study the decontamination of metallic surfaces such as stainless steel 304L using a nanosecond pulsed laser.

Graded porous inorganic materials derived from self-assembled block copolymer templates.

PubMed

Gu, Yibei; Werner, Jörg G; Dorin, Rachel M; Robbins, Spencer W; Wiesner, Ulrich

2015-03-19

Graded porous inorganic materials directed by macromolecular self-assembly are expected to offer unique structural platforms relative to conventional porous inorganic materials. Their preparation to date remains a challenge, however, based on the sparsity of viable synthetic self-assembly pathways to control structural asymmetry. Here we demonstrate the fabrication of graded porous carbon, metal, and metal oxide film structures from self-assembled block copolymer templates by using various backfilling techniques in combination with thermal treatments for template removal and chemical transformations. The asymmetric inorganic structures display mesopores in the film top layers and a gradual pore size increase along the film normal in the macroporous sponge-like support structure. Substructure walls between macropores are themselves mesoporous, constituting a structural hierarchy in addition to the pore gradation. Final graded structures can be tailored by tuning casting conditions of self-assembled templates as well as the backfilling processes. We expect that these graded porous inorganic materials may find use in applications including separation, catalysis, biomedical implants, and energy conversion and storage.

Continuous lengths of oxide superconductors

DOEpatents

Kroeger, Donald M.; List, III, Frederick A.

2000-01-01

A layered oxide superconductor prepared by depositing a superconductor precursor powder on a continuous length of a first substrate ribbon. A continuous length of a second substrate ribbon is overlaid on the first substrate ribbon. Sufficient pressure is applied to form a bound layered superconductor precursor powder between the first substrate ribbon and the second substrate ribbon. The layered superconductor precursor is then heat treated to establish the oxide superconducting phase. The layered oxide superconductor has a smooth interface between the substrate and the oxide superconductor.

Release-rate calorimetry of multilayered materials for aircraft seats

NASA Technical Reports Server (NTRS)

Fewell, L. L.; Duskin, F. E.; Spieth, H.; Trabold, E.; Parker, J. A.

1979-01-01

Multilayered samples of contemporary and improved fire resistant aircraft seat materials (foam cushion, decorative fabric, slip sheet, fire blocking layer, and cushion reinforcement layer) were evaluated for their rates of heat release and smoke generation. Top layers (decorative fabric, slip sheet, fire blocking, and cushion reinforcement) with glass fiber block cushion were evaluated to determine which materials based on their minimum contributions to the total heat release of the multilayered assembly may be added or deleted. Top layers exhibiting desirable burning profiles were combined with foam cushion materials. The smoke and heat release rates of multilayered seat materials were then measured at heat fluxes of 1.5 and 3.5 W/sq cm. Choices of contact and silicone adhesives for bonding multilayered assemblies were based on flammability, burn and smoke generation, animal toxicity tests, and thermal gravimetric analysis. Abrasion tests were conducted on the decorative fabric covering and slip sheet to ascertain service life and compatibility of layers.

Au-coated 3-D nanoporous titania layer prepared using polystyrene-b-poly(2-vinylpyridine) block copolymer nanoparticles.

PubMed

Shin, Won-Jeong; Basarir, Fevzihan; Yoon, Tae-Ho; Lee, Jae-Suk

2009-04-09

New nanoporous structures of Au-coated titania layers were prepared by using amphiphilic block copolymer nanoparticles as a template. A 3-D template composed of self-assembled quaternized polystyrene-b-poly(2-vinylpyridine) (Q-PS-b-P2VP) block copolymer nanoparticles below 100 nm was prepared. The core-shell-type nanoparticles were well ordered three-dimensionally using the vertical immersion method on the substrate. The polar solvents were added to the polymer solution to prevent particle merging at 40 degrees C when considering the interaction between polymer nanoparticles and solvents. Furthermore, Au-coated PS-b-P2VP nanoparticles were prepared using thiol-capped Au nanoparticles (3 nm). The 3-D arrays with Au-coated PS-b-P2VP nanoparticles as a template contributed to the preparation of the nanoporous Au-coated titania layer. Therefore, the nanoporous Au-coated titania layer was fabricated by removing PS-b-P2VP block copolymer nanoparticles by oxygen plasma etching.

Architecture for coated conductors

DOEpatents

Foltyn, Stephen R.; Arendt, Paul N.; Wang, Haiyan; Stan, Liliana

2010-06-01

Articles are provided including a base substrate having a layer of an oriented cubic oxide material with a rock-salt-like structure layer thereon, and, a layer of epitaxial titanium nitride upon the layer of an oriented cubic oxide material having a rock-salt-like structure. Such articles can further include thin films of high temperature superconductive oxides such as YBCO upon the layer of epitaxial titanium nitride or upon a intermediate buffer layer upon the layer of epitaxial titanium nitride.

Desulfurization apparatus and method

DOEpatents

Rong, Charles; Jiang, Rongzhong; Chu, Deryn

2013-06-18

A method and system for desulfurization comprising first and second metal oxides; a walled enclosure having an inlet and an exhaust for the passage of gas to be treated; the first and second metal oxide being combinable with hydrogen sulfide to produce a reaction comprising a sulfide and water; the first metal oxide forming a first layer and the second metal oxide forming a second layer within the walled surroundings; the first and second layers being positioned so the first layer removes the bulk amount of the hydrogen sulfide from the treated gas prior to passage through the second layer, and the second layer removes substantially all of the remaining hydrogen sulfide from the treated gas; the first metal oxide producing a stoichiometrical capacity in excess of 500 mg sulfur/gram; the second metal oxide reacts with the hydrogen sulfide more favorably but has a stoichometrical capacity which is less than the first reactant; whereby the optimal amount by weight of the first and second metal oxides is achieved by utilizing two to three units by weight of the first metal oxide for every unit of the second metal oxide.

Study on ablation behavior of silicone rubber based insulation material under the condition of boron oxide particles erosion

NASA Astrophysics Data System (ADS)

Zha, B. L.; Shi, Y. A.; Wang, J. J.; Su, Q. D.

2018-01-01

Self-designed oxygen-kerosene ablation system was employed to study the ablation characteristics of silicone rubber based thermal insulation materials under the condition of boron oxide particles erosion. The ablation test was designed with a mass fraction of 1.69% boron oxide particles and particles-free, the microstructure and elemental analysis of the specimens before and after ablation were carried out by Scanning Electron Microscopy (SEM) and Energy Dispersion Spectrum (EDS). Experiment results show that the average mass ablation rate of the materials was 0.0099 g•s-1 and the average ablation rate was -0.025 mm•s-1 under the condition of pure gas phase ablation; and the average mass ablation rate of the multiphase ablation test group was 0.1775 g•s-1, whose average ablation rate was 0.437 mm•s-1 during the ablation process, the boron oxide particles would adhere a molten layer on the flame contact surface of the specimen, which covering the pores on the material surface, blocking the infiltration channel for the oxidizing component and slowing down the oxidation loss rate of the material below the surface, but because the particles erosion was the main reason for material depletion, the combined effect of the above both led to the upward material ablation rates of Silicone Rubber.

Functionally gradient material for membrane reactors to convert methane gas into value-added products

DOEpatents

Balachandran, U.; Dusek, J.T.; Kleefisch, M.S.; Kobylinski, T.P.

1996-11-12

A functionally gradient material for a membrane reactor for converting methane gas into value-added-products includes an outer tube of perovskite, which contacts air; an inner tube which contacts methane gas, of zirconium oxide, and a bonding layer between the perovskite and zirconium oxide layers. The bonding layer has one or more layers of a mixture of perovskite and zirconium oxide, with the layers transitioning from an excess of perovskite to an excess of zirconium oxide. The transition layers match thermal expansion coefficients and other physical properties between the two different materials. 7 figs.

Functionally gradient material for membrane reactors to convert methane gas into value-added products

DOEpatents

Balachandran, Uthamalingam; Dusek, Joseph T.; Kleefisch, Mark S.; Kobylinski, Thadeus P.

1996-01-01

A functionally gradient material for a membrane reactor for converting methane gas into value-added-products includes an outer tube of perovskite, which contacts air; an inner tube which contacts methane gas, of zirconium oxide, and a bonding layer between the perovskite and zirconium oxide layers. The bonding layer has one or more layers of a mixture of perovskite and zirconium oxide, with the layers transitioning from an excess of perovskite to an excess of zirconium oxide. The transition layers match thermal expansion coefficients and other physical properties between the two different materials.

Oxidation behaviour and electrical properties of cobalt/cerium oxide composite coatings for solid oxide fuel cell interconnects

NASA Astrophysics Data System (ADS)

Harthøj, Anders; Holt, Tobias; Møller, Per

2015-05-01

This work evaluates the performance of cobalt/cerium oxide (Co/CeO2) composite coatings and pure Co coatings to be used for solid oxide fuel cell (SOFC) interconnects. The coatings are electroplated on the ferritic stainless steels Crofer 22 APU and Crofer 22H. Coated and uncoated samples are exposed in air at 800 °C for 3000 h and oxidation rates are measured and oxide scale microstructures are investigated. Area-specific resistances (ASR) in air at 850 °C of coated and uncoated samples are also measured. A dual layered oxide scale formed on all coated samples. The outer layer consisted of Co, Mn, Fe and Cr oxide and the inner layer consisted of Cr oxide. The CeO2 was present as discrete particles in the outer oxide layer after exposure. The Cr oxide layer thicknesses and oxidations rates were significantly reduced for Co/CeO2 coated samples compared to for Co coated and uncoated samples. The ASR of all Crofer 22H samples increased significantly faster than of Crofer 22 APU samples which was likely due to the presence of SiO2 in the oxide/metal interface of Crofer 22H.

Indium oxide based fiber optic SPR sensor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shukla, Sarika; Sharma, Navneet K., E-mail: navneetk.sharma@jiit.ac.in

2016-05-06

Surface plasmon resonance based fiber optic sensor using indium oxide layer is presented and theoretically studied. It has been found that with increase in thickness of indium oxide layer beyond 170 nm, the sensitivity of SPR sensor decreases. 170 nm thick indium oxide layer based SPR sensor holds maximum sensitivity.

Onion-like microspheres with tricomponent from gelable triblock copolymers.

PubMed

Zhang, Ke; Gao, Lei; Chen, Yongming; Yang, Zhenzhong

2010-06-01

Onion-like functional microspheres with three alternate layers were obtained by aerosol-assisted self-assembly of a functional block copolymer, poly(3-(triethoxysilyl)propyl methacrylate)-block-polystyrene-block-poly(2-vinylpyridine) (PTEPM-b-PS-b-P2VP). Through self-gelation reaction occurred in the PTEPM layers, organic/inorganic hybrid functional spheres with highly ordered concentric curved lamellar structure were prepared. Using these hybrid onion-like microspheres as templates, gold ions were entrapped into the P2VP layers and then gold nanoparticles located in each P2VP layers were formed by a reduction. By dispersing in acidic water, the onion-like polymeric spheres were broken and, as a result, sandwich-like nanoplates with curved morphology were obtained. Copyright © 2010 Elsevier Inc. All rights reserved.

Graphene oxide/PEDOT:PSS composite hole transport layer for efficient and stable planar heterojunction perovskite solar cells.

PubMed

Lee, Da-Young; Na, Seok-In; Kim, Seok-Soon

2016-01-21

We investigated a graphene oxide (GO)/poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) ( PSS) composite as a promising candidate for the practical application of a 2-D carbonaceous hole transport layer (HTL) to planar heterojunction perovskite solar cells (PeSCs) consisting of a transparent electrode/HTL/perovskite/fullerene/metal electrode. Both the insulating properties of GO and the non-uniform coating of the transparent electrode with GO cause the poor morphology of perovskite induced low power conversion efficiency (PCE) of 6.4%. On the other hand, PeSCs with a GO/PEDOT:PSS composite HTL, exhibited a higher PCE of 9.7% than that of a device fabricated with conventional PSS showing a PCE of 8.2%. The higher performance is attributed to the decreased series resistance (RS) and increased shunt resistance (RSh). The well-matched work-function between GO (4.9 eV) and PSS (5.1 eV) probably results in more efficient charge transport and an overall decrease in RS. The existence of GO with a large bandgap of ∼3.6 eV might induce the effective blocking of electrons, leading to an increase of RSh. Moreover, improvement in the long-term stability under atmospheric conditions was observed.

Low voltage solid-state lateral coloration electrochromic device

DOEpatents

Tracy, C.E.; Benson, D.K.; Ruth, M.R.

1984-12-21

A solid-state transition metal oxide device comprising a plurality of layers having a predisposed orientation including an electrochromic oxide layer. Conductive material including anode and cathode contacts is secured to the device. Coloration is actuated within the electrochromic oxide layer after the application of a predetermined potential between the contacts. The coloration action is adapted to sweep or dynamically extend across the length of the electrochromic oxide layer.

Light-emitting diodes based on solution-processed nontoxic quantum dots: oxides as carrier-transport layers and introducing molybdenum oxide nanoparticles as a hole-inject layer.

PubMed

Bhaumik, Saikat; Pal, Amlan J

2014-07-23

We report fabrication and characterization of solution-processed quantum dot light-emitting diodes (QDLEDs) based on a layer of nontoxic and Earth-abundant zinc-diffused silver indium disulfide (AIZS) nanoparticles as an emitting material. In the QDLEDs fabricated on indium tin oxide (ITO)-coated glass substrates, we use layers of oxides, such as graphene oxide (GO) and zinc oxide (ZnO) nanoparticles as a hole- and electron-transport layer, respectively. In addition, we introduce a layer of MoO3 nanoparticles as a hole-inject one. We report a comparison of the characteristics of different device architectures. We show that an inverted device architecture, ITO/ZnO/AIZS/GO/MoO3/Al, yields a higher electroluminescence (EL) emission, compared to direct ones, for three reasons: (1) the GO/MoO3 layers introduce barriers for electrons to reach the Al electrode, and, similarly, the ZnO layers acts as a barrier for holes to travel to the ITO electrode; (2) the introduction of a layer of MoO3 nanoparticles as a hole-inject layer reduces the barrier height for holes and thereby balances charge injection in the inverted structure; and (3) the wide-bandgap zinc oxide next to the ITO electrode does not absorb the EL emission during its exit from the device. In the QDLEDs with oxides as carrier inject and transport layers, the EL spectrum resembles the photoluminescence emission of the emitting material (AIZS), implying that excitons are formed in the quaternary nanocrystals and decay radiatively.

Performance evaluation for 120 four-layer DOI block detectors of the jPET-D4.

PubMed

Inadama, Naoko; Murayama, Hideo; Ono, Yusuke; Tsuda, Tomoaki; Hamamoto, Manabu; Yamaya, Taiga; Yoshida, Eiji; Shibuya, Kengo; Nishikido, Fumihiko; Takahashi, Kei; Kawai, Hideyuki

2008-01-01

The jPET-D4 is a brain positron emission tomography (PET) scanner that we have developed to meet user demands for high sensitivity and high spatial resolution. For this scanner, we developed a four-layer depth-of-interaction (DOI) detector. The four-layer DOI detector is a key component for the jPET-D4, its performance has great influence on the overall system performance. Previously, we reported the original technique for encoding four-layer DOI. Here, we introduce the final design of the jPET-D4 detector and present the results of an investigation on uniformity in performance of the detector. The performance evaluation was done over the 120 DOI crystal blocks for the detectors, which are to be assembled into the jPET-D4 scanner. We also introduce the crystal assembly method, which is simple enough, even though each DOI crystal block is composed of 1,024 crystal elements. The jPET-D4 detector consists of four layers of 16 x 16 Gd(2)SiO(5) (GSO) crystals and a 256-channel flat-panel position-sensitive photomultiplier tube (256ch FP-PMT). To identify scintillated crystals in the four-layer DOI detector, we use pulse shape discrimination and position discrimination on the two-dimensional (2D) position histogram. For pulse shape discrimination, two kinds of GSO crystals that show different scintillation decay time constants are used in the upper two and lower two layers, respectively. Proper reflector arrangement in the crystal block then allows the scintillated crystals to be identified in these two-layer groupings with two 2D position histograms. We produced the 120 DOI crystal blocks for the jPET-D4 system, and measured their characteristics such as the accuracy of pulse shape discrimination, energy resolution, and the pulse height of the full energy peak. The results show a satisfactory and uniform performance of the four-layer DOI crystal blocks; for example, misidentification rate in each GSO layer is <5% based on pulse shape discrimination, the averaged energy resolutions for the central four crystals of the first (farthest from the FP-PMT), second, third, and 4th layers are 15.7 +/- 1.0, 15.8 +/- 0.6, 17.7 +/- 1.2, and 17.3 +/- 1.4%, respectively, and variation in pulse height of the full energy peak among the four layers is <5% on average.

Fabrication and characterization of iron oxide dextran composite layers

NASA Astrophysics Data System (ADS)

Iconaru, S. L.; Predoi, S. A.; Beuran, M.; Ciobanu, C. S.; Trusca, R.; Ghita, R.; Negoi, I.; Teleanu, G.; Turculet, S. C.; Matei, M.; Badea, Monica; Prodan, A. M.

2018-02-01

Super paramagnetic iron oxide nanoparticles such as maghemite have been shown to exhibit antimicrobial properties [1-5]. Moreover, the iron oxide nanoparticles have been proposed as a potential magnetically controllable antimicrobial agent which could be directed to a specific infection [3-5]. The present research has focused on studies of the surface and structure of iron oxide dextran (D-IO) composite layers surface and structure. These composite layers were deposited on Si substrates. The structure of iron oxide dextran composite layers was investigated by X-Ray Diffraction (XRD) and Fourier Transform Infrared Spectroscopy (FTIR) while the surface morphology was evaluated by Scanning Electron Microscopy (SEM). The structural characterizations of the iron oxide dextran composite layers revealed the basic constituents of both iron and dextran structure. Furthermore, the in vitro evaluation of the antifungal effect of the complex layers, which have been shown revealed to be active against C. albicans cells at distinct intervals of time, is exhibited. Our research came to confirm the fungicidal effect of iron oxide dextran composite layers. Also, our results suggest that iron oxide dextran surface may be used for medical treatment of biofilm associated Candida infections.

Impact of implanted phosphorus on the diffusivity of boron and its applicability to silicon solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Schrof, Julian; Müller, Ralph; Reedy, Robert C.

2015-07-28

Boron diffusivity reduction in extrinsically doped silicon was investigated in the context of a process combination consisting of BBr3 furnace diffusion and preceding Phosphorus ion implantation. The implantation of Phosphorus leads to a substantial blocking of Boron during the subsequent Boron diffusion. First, the influences of ion implantation induced point defects as well as the initial P doping on B diffusivity were studied independently. Here, it was found that not the defects created during ion implantation but the P doping itself results in the observed B diffusion retardation. The influence of the initial P concentration was investigated in more detailmore » by varying the P implantation dose. A secondary ion mass spectrometry (SIMS) analysis of the BSG layer after the B diffusion revealed that the B diffusion retardation is not due to potential P content in the BSG layer but rather caused by the n-type doping of the crystalline silicon itself. Based on the observations the B diffusion retardation was classified into three groups: (i) no reduction of B diffusivity, (ii) reduced B diffusivity, and (iii) blocking of the B diffusion. The retardation of B diffusion can well be explained by the phosphorus doping level resulting in a Fermi level shift and pairing of B and P ions, both reducing the B diffusivity. Besides these main influences, there are probably additional transient phenomena responsible for the blocking of boron. Those might be an interstitial transport mechanism caused by P diffusion that reduces interstitial concentration at the surface or the silicon/BSG interface shift due to oxidation during the BBr3 diffusion process. Lifetime measurements revealed that the residual (non-blocked) B leads to an increased dark saturation current density in the P doped region. Nevertheless, electrical quality is on a high level and was further increased by reducing the B dose as well as by removing the first few nanometers of the silicon surface after the BBr3 diffusion« less

An alternative method for sampling and petrographically characterizing an Eocene coal bed, southeast Kalimantan, Indonesia

DOE Office of Scientific and Technical Information (OSTI.GOV)

Moore, T.A.

1990-01-01

A study undertaken on an Eocene age coal bed in southeast Kalimantan, Indonesia determined that there was a relationship between megascopically determined coal types and kinds and sizes of organic components. The study also concluded that the most efficient way to characterize the seam was from collection of two 3 cm blocks from each layer or bench defined by megascopic character and that a maximum of 125 point counts was needed on each block. Microscopic examination of uncrushed block samples showed the coal to be composed of plant parts and tissues set in a matrix of both fine-grained and amorphousmore » material. The particulate matrix is composed of cell wall and liptinite fragments, resins, spores, algae, and fungal material. The amorphous matrix consists of unstructured (at 400x) huminite and liptinite. Size measurements showed that each particulate component possessed its own size distribution which approached normality when transformed to a log{sub 2} or phi scale. Degradation of the plant material during peat accumulation probably controlled grain size in the coal types. This notion is further supported by the increased concentration of decay resistant resin and cell fillings in the nonbanded and dull coal types. In the sampling design experiment, two blocks from each layer and two layers from each coal type were collected. On each block, 2 to 4 traverses totaling 500 point counts per block were performed to test the minimum number of points needed to characterize a block. A hierarchical analysis of variance showed that most of the petrographic variation occurred between coal types. The results from these analyses also indicated that, within a coal type, sampling should concentrate on the layer level and that only 250 point counts, split between two blocks, were needed to characterize a layer.« less

Atomic Layer Deposition of Chemical Passivation Layers and High Performance Anti-Reflection Coatings on Back-Illuminated Detectors

NASA Technical Reports Server (NTRS)

Hoenk, Michael E. (Inventor); Greer, Frank (Inventor); Nikzad, Shouleh (Inventor)

2014-01-01

A back-illuminated silicon photodetector has a layer of Al2O3 deposited on a silicon oxide surface that receives electromagnetic radiation to be detected. The Al2O3 layer has an antireflection coating deposited thereon. The Al2O3 layer provides a chemically resistant separation layer between the silicon oxide surface and the antireflection coating. The Al2O3 layer is thin enough that it is optically innocuous. Under deep ultraviolet radiation, the silicon oxide layer and the antireflection coating do not interact chemically. In one embodiment, the silicon photodetector has a delta-doped layer near (within a few nanometers of) the silicon oxide surface. The Al2O3 layer is expected to provide similar protection for doped layers fabricated using other methods, such as MBE, ion implantation and CVD deposition.

Enhancement in sensitivity of graphene-based zinc oxide assisted bimetallic surface plasmon resonance (SPR) biosensor

NASA Astrophysics Data System (ADS)

Kumar, Rajeev; Kushwaha, Angad S.; Srivastava, Monika; Mishra, H.; Srivastava, S. K.

2018-03-01

In the present communication, a highly sensitive surface plasmon resonance (SPR) biosensor with Kretschmann configuration having alternate layers, prism/zinc oxide/silver/gold/graphene/biomolecules (ss-DNA) is presented. The optimization of the proposed configuration has been accomplished by keeping the constant thickness of zinc oxide (32 nm), silver (32 nm), graphene (0.34 nm) layer and biomolecules (100 nm) for different values of gold layer thickness (1, 3 and 5 nm). The sensitivity of the proposed SPR biosensor has been demonstrated for a number of design parameters such as gold layer thickness, number of graphene layer, refractive index of biomolecules and the thickness of biomolecules layer. SPR biosensor with optimized geometry has greater sensitivity (66 deg/RIU) than the conventional (52 deg/RIU) as well as other graphene-based (53.2 deg/RIU) SPR biosensor. The effect of zinc oxide layer thickness on the sensitivity of SPR biosensor has also been analysed. From the analysis, it is found that the sensitivity increases significantly by increasing the thickness of zinc oxide layer. It means zinc oxide intermediate layer plays an important role to improve the sensitivity of the biosensor. The sensitivity of SPR biosensor also increases by increasing the number of graphene layer (upto nine layer).

Covalent modification and exfoliation of graphene oxide using ferrocene

NASA Astrophysics Data System (ADS)

Avinash, M. B.; Subrahmanyam, K. S.; Sundarayya, Y.; Govindaraju, T.

2010-09-01

Large scale preparation of single-layer graphene and graphene oxide is of great importance due to their potential applications. We report a simple room temperature method for the exfoliation of graphene oxide using covalent modification of graphene oxide with ferrocene to obtain single-layer graphene oxide sheets. The samples were characterized by FESEM, HRTEM, AFM, EDAX, FT-IR, Raman and Mössbauer spectroscopic studies. HRTEM micrograph of the covalently modified graphene oxide showed increased interlayer spacing of ~2.4 nm due to ferrocene intercalation. The presence of single-layer graphene oxide sheets were confirmed by AFM studies. The covalently modified ferrocene-graphene oxide composite showed interesting magnetic behavior.Large scale preparation of single-layer graphene and graphene oxide is of great importance due to their potential applications. We report a simple room temperature method for the exfoliation of graphene oxide using covalent modification of graphene oxide with ferrocene to obtain single-layer graphene oxide sheets. The samples were characterized by FESEM, HRTEM, AFM, EDAX, FT-IR, Raman and Mössbauer spectroscopic studies. HRTEM micrograph of the covalently modified graphene oxide showed increased interlayer spacing of ~2.4 nm due to ferrocene intercalation. The presence of single-layer graphene oxide sheets were confirmed by AFM studies. The covalently modified ferrocene-graphene oxide composite showed interesting magnetic behavior. Electronic supplementary information (ESI) available: Magnetic data; AFM images; TEM micrographs; and Mössbauer spectroscopic data. See DOI: 10.1039/c0nr00024h

Nanopatterned articles produced using surface-reconstructed block copolymer films

DOEpatents

Russell, Thomas P.; Park, Soojin; Wang, Jia-Yu; Kim, Bokyung

2016-06-07

Nanopatterned surfaces are prepared by a method that includes forming a block copolymer film on a substrate, annealing and surface reconstructing the block copolymer film to create an array of cylindrical voids, depositing a metal on the surface-reconstructed block copolymer film, and heating the metal-coated block copolymer film to redistribute at least some of the metal into the cylindrical voids. When very thin metal layers and low heating temperatures are used, metal nanodots can be formed. When thicker metal layers and higher heating temperatures are used, the resulting metal structure includes nanoring-shaped voids. The nanopatterned surfaces can be transferred to the underlying substrates via etching, or used to prepare nanodot- or nanoring-decorated substrate surfaces.

Non-native three-dimensional block copolymer morphologies

DOE PAGES

Rahman, Atikur; Majewski, Pawel W.; Doerk, Gregory; ...

2016-12-22

Self-assembly is a powerful paradigm, wherein molecules spontaneously form ordered phases exhibiting well-defined nanoscale periodicity and shapes. However, the inherent energy-minimization aspect of self-assembly yields a very limited set of morphologies, such as lamellae or hexagonally packed cylinders. Here, we show how soft self-assembling materials—block copolymer thin films—can be manipulated to form a diverse library of previously unreported morphologies. In this iterative assembly process, each polymer layer acts as both a structural component of the final morphology and a template for directing the order of subsequent layers. Specifically, block copolymer films are immobilized on surfaces, and template successive layers throughmore » subtle surface topography. As a result, this strategy generates an enormous variety of three-dimensional morphologies that are absent in the native block copolymer phase diagram.« less

Non-native three-dimensional block copolymer morphologies

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rahman, Atikur; Majewski, Pawel W.; Doerk, Gregory

Self-assembly is a powerful paradigm, wherein molecules spontaneously form ordered phases exhibiting well-defined nanoscale periodicity and shapes. However, the inherent energy-minimization aspect of self-assembly yields a very limited set of morphologies, such as lamellae or hexagonally packed cylinders. Here, we show how soft self-assembling materials—block copolymer thin films—can be manipulated to form a diverse library of previously unreported morphologies. In this iterative assembly process, each polymer layer acts as both a structural component of the final morphology and a template for directing the order of subsequent layers. Specifically, block copolymer films are immobilized on surfaces, and template successive layers throughmore » subtle surface topography. As a result, this strategy generates an enormous variety of three-dimensional morphologies that are absent in the native block copolymer phase diagram.« less

Mechanical Properties of Degraded PMR-15 Resin

NASA Technical Reports Server (NTRS)

Tsuji, Luis C.

2000-01-01

Thermo-oxidative aging produces a nonuniform degradation state in PMR-15 resin. A surface layer, usually attributed to oxidative degradation, forms. This surface layer has different properties from the inner material. A set of material tests was designed to separate the properties of the oxidized surface layer from the properties of interior material. Test specimens were aged at 316 C in either air or nitrogen, for durations of up to 800 hr. The thickness of the oxidized surface layer in air aged specimens, and the shrinkage and coefficient of thermal expansion (CTE) of nitrogen aged specimens were measured directly. The nitrogen-aged specimens were assumed to have the same properties as the interior material in the air-aged specimens. Four-point-bend tests were performed to determine modulus of both the oxidized surface layer and the interior material. Bimaterial strip specimens consisting of oxidized surface material and unoxidized interior material were constructed and used to determine surface layer shrinkage and CTE. Results confirm that the surface layer and core materials have substantially different properties.

Zinc-oxide-based nanostructured materials for heterostructure solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bobkov, A. A.; Maximov, A. I.; Moshnikov, V. A., E-mail: vamoshnikov@mail.ru

Results obtained in the deposition of nanostructured zinc-oxide layers by hydrothermal synthesis as the basic method are presented. The possibility of controlling the structure and morphology of the layers is demonstrated. The important role of the procedure employed to form the nucleating layer is noted. The faceted hexagonal nanoprisms obtained are promising for the fabrication of solar cells based on oxide heterostructures, and aluminum-doped zinc-oxide layers with petal morphology, for the deposition of an antireflection layer. The results are compatible and promising for application in flexible electronics.

Durable metallized polymer mirror

DOEpatents

Schissel, Paul O.; Kennedy, Cheryl E.; Jorgensen, Gary J.; Shinton, Yvonne D.; Goggin, Rita M.

1994-01-01

A metallized polymer mirror construction having improved durability against delamination and tunneling, comprising: an outer layer of polymeric material; a metal oxide layer underlying the outer layer of polymeric material; a silver reflective layer underneath the metal oxide layer; and a layer of adhesive attaching the silver layer to a substrate.

Solder for oxide layer-building metals and alloys

DOEpatents

Kronberg, James W.

1992-01-01

A low temperature solder and method for soldering an oxide layer-building metal such as aluminum, titanium, tantalum or stainless steel. The comosition comprises tin and zinc; germanium as a wetting agent; preferably small amounts of copper and antimony; and a grit, such as silicon carbide. The grit abrades any oxide layer formed on the surface of the metal as the germanium penetrates beneath and loosens the oxide layer to provide good metal-to-metal contact. The germanium comprises less than aproximatley 10% by weight of the solder composition so that it provides sufficient wetting action but does not result in a melting temperature above approximately 300.degree. C. The method comprises the steps rubbing the solder against the metal surface so the grit in the solder abrades the surface while heating the surface until the solder begins to melt and the germanium penetrates the oxide layer, then brushing aside any oxide layer loosened by the solder.

Solder for oxide layer-building metals and alloys

DOEpatents

Kronberg, J.W.

1992-09-15

A low temperature solder and method for soldering an oxide layer-building metal such as aluminum, titanium, tantalum or stainless steel is disclosed. The composition comprises tin and zinc; germanium as a wetting agent; preferably small amounts of copper and antimony; and a grit, such as silicon carbide. The grit abrades any oxide layer formed on the surface of the metal as the germanium penetrates beneath and loosens the oxide layer to provide good metal-to-metal contact. The germanium comprises less than approximately 10% by weight of the solder composition so that it provides sufficient wetting action but does not result in a melting temperature above approximately 300 C. The method comprises the steps rubbing the solder against the metal surface so the grit in the solder abrades the surface while heating the surface until the solder begins to melt and the germanium penetrates the oxide layer, then brushing aside any oxide layer loosened by the solder.

Solution processed metal oxide thin film hole transport layers for high performance organic solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Steirer, K. Xerxes; Berry, Joseph J.; Chesin, Jordan P.

2017-01-10

A method for the application of solution processed metal oxide hole transport layers in organic photovoltaic devices and related organic electronics devices is disclosed. The metal oxide may be derived from a metal-organic precursor enabling solution processing of an amorphous, p-type metal oxide. An organic photovoltaic device having solution processed, metal oxide, thin-film hole transport layer.

[The role of BCP in electroluminescence of multilayer organic light-emitting devices].

PubMed

Deng, Zhao-Ru; Yang, Sheng-Yi; Lou, Zhi-Dong; Meng, Ling-Chuan

2009-03-01

As a hole-blocking layer, 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP) is usually used in blue and white light electroluminescent devices. The ability of blocking holes of BCP layer depends on its thickness, and basically holes can tunnel through thin BCP layer. In order to know the role of BCP layer in electroluminescence (EL) of multilayer organic light-emitting diodes (OLEDs), in the present paper, the authors designed a multilayer OLED ITO/NPB/BCP/Alq3 : DCJTB/Alq3/Al and investigated the influence of thickness of BCP on the EL spectra of multilayer OLEDs at different applied voltages. The experimental data show that thin BCP layer can block holes partially and tune the energy transfer between different emissive layers, and in this way, it is easy to obtain white emission, but its EL spectra will change with the applied voltages. The EL spectra of multilayer device will remain relatively stable when BCP layer is thick enough, and the holes can hardly tunnel through when the thickness of BCP layer is more than 15 nm. Furthermore, the stability of EL spectra of the multilayer OLED at different applied voltages was discussed.

Multi-layered nanocomposite dielectrics for high density organic memory devices

NASA Astrophysics Data System (ADS)

Kang, Moonyeong; Chung, Kyungwha; Baeg, Kang-Jun; Kim, Dong Ha; Kim, Choongik

2015-01-01

We fabricated organic memory devices with metal-pentacene-insulator-silicon structure which contain double dielectric layers comprising 3D pattern of Au nanoparticles (Au NPs) and block copolymer (PS-b-P2VP). The role of Au NPs is to charge/discharge carriers upon applied voltage, while block copolymer helps to form highly ordered Au NP patterns in the dielectric layer. Double-layered nanocomposite dielectrics enhanced the charge trap density (i.e., trapped charge per unit area) by Au NPs, resulting in increase of the memory window (ΔVth).

Evidence for single metal two electron oxidative addition and reductive elimination at uranium.

PubMed

Gardner, Benedict M; Kefalidis, Christos E; Lu, Erli; Patel, Dipti; McInnes, Eric J L; Tuna, Floriana; Wooles, Ashley J; Maron, Laurent; Liddle, Stephen T

2017-12-01

Reversible single-metal two-electron oxidative addition and reductive elimination are common fundamental reactions for transition metals that underpin major catalytic transformations. However, these reactions have never been observed together in the f-block because these metals exhibit irreversible one- or multi-electron oxidation or reduction reactions. Here we report that azobenzene oxidises sterically and electronically unsaturated uranium(III) complexes to afford a uranium(V)-imido complex in a reaction that satisfies all criteria of a single-metal two-electron oxidative addition. Thermolysis of this complex promotes extrusion of azobenzene, where H-/D-isotopic labelling finds no isotopomer cross-over and the non-reactivity of a nitrene-trap suggests that nitrenes are not generated and thus a reductive elimination has occurred. Though not optimally balanced in this case, this work presents evidence that classical d-block redox chemistry can be performed reversibly by f-block metals, and that uranium can thus mimic elementary transition metal reactivity, which may lead to the discovery of new f-block catalysis.

Effect of acid on the aggregation of poly(ethylene xide)-poly(propylene oxide)-poly(ethylene oxide) block copolymers.

PubMed

Yang, Bin; Guo, Chen; Chen, Shu; Ma, Junhe; Wang, Jing; Liang, Xiangfeng; Zheng, Lily; Liu, Huizhou

2006-11-23

The acid effect on the aggregation of poly(ethylene oxide)-poly(propylene oxide)-poly(ethylene oxide) block copolymers EO(20)PO(70)EO(20) has been investigated by transmission electron microscopy (TEM), particle size analyzer (PSA), Fourier transformed infrared, and fluorescence spectroscopy. The critical micellization temperature for Pluronic P123 in different HCl aqueous solutions increases with the increase of acid concentration. Additionally, the hydrolysis degradation of PEO blocks is observed in strong acid concentrations at higher temperatures. When the acid concentration is low, TEM and PSA show the increase of the micelle mean diameter and the decrease of the micelle polydispersity at room temperature, which demonstrate the extension of EO corona and tendency of uniform micelle size because of the charge repulsion. When under strong acid conditions, the aggregation of micelles through the protonated water bridges was observed.

Self-assembled virus-like particles with magnetic cores.

PubMed

Huang, Xinlei; Bronstein, Lyudmila M; Retrum, John; Dufort, Chris; Tsvetkova, Irina; Aniagyei, Stella; Stein, Barry; Stucky, Galen; McKenna, Brandon; Remmes, Nicholas; Baxter, David; Kao, C Cheng; Dragnea, Bogdan

2007-08-01

Efficient encapsulation of functionalized spherical nanoparticles by viral protein cages was found to occur even if the nanoparticle is larger than the inner cavity of the native capsid. This result raises the intriguing possibility of reprogramming the self-assembly of viral structural proteins. The iron oxide nanotemplates used in this work are superparamagnetic, with a blocking temperature of about 250 K, making these virus-like particles interesting for applications such as magnetic resonance imaging and biomagnetic materials. Another novel feature of the virus-like particle assembly described in this work is the use of an anionic lipid micelle coat instead of a molecular layer covalently bound to the inorganic nanotemplate. Differences between the two functionalization strategies are discussed.

Nano-sized layered Mn oxides as promising and biomimetic water oxidizing catalysts for water splitting in artificial photosynthetic systems.

PubMed

Najafpour, Mohammad Mahdi; Heidari, Sima; Amini, Emad; Khatamian, Masoumeh; Carpentier, Robert; Allakhverdiev, Suleyman I

2014-04-05

One challenge in artificial photosynthetic systems is the development of artificial model compounds to oxidize water. The water-oxidizing complex of Photosystem II which is responsible for biological water oxidation contains a cluster of four Mn ions bridged by five oxygen atoms. Layered Mn oxides as efficient, stable, low cost, environmentally friendly and easy to use, synthesize, and manufacture compounds could be considered as functional and structural models for the site. Because of the related structure of these Mn oxides and the catalytic centre of the active site of the water oxidizing complex of Photosystem II, the study of layered Mn oxides may also help to understand more about the mechanism of water oxidation by the natural site. This review provides an overview of the current status of layered Mn oxides in artificial photosynthesis and discuss the sophisticated design strategies for Mn oxides as water oxidizing catalysts. Copyright © 2014 Elsevier B.V. All rights reserved.

Durable metallized polymer mirror

DOEpatents

Schissel, P.O.; Kennedy, C.E.; Jorgensen, G.J.; Shinton, Y.D.; Goggin, R.M.

1994-11-01

A metallized polymer mirror construction is disclosed having improved durability against delamination and tunneling, comprising: an outer layer of polymeric material; a metal oxide layer underlying the outer layer of polymeric material; a silver reflective layer underneath the metal oxide layer; and a layer of adhesive attaching the silver layer to a substrate. 6 figs.

Producing thin film photovoltaic modules with high integrity interconnects and dual layer contacts

DOEpatents

Jansen, Kai W.; Maley, Nagi

2000-01-01

High performance photovoltaic modules are produced with improved interconnects by a special process. Advantageously, the photovoltaic modules have a dual layer back (rear) contact and a front contact with at least one layer. The front contact and the inner layer of the back contact can comprise a transparent conductive oxide. The outer layer of the back contact can comprise a metal or metal oxide. The front contact can also have a dielectric layer. In one form, the dual layer back contact comprises a zinc oxide inner layer and an aluminum outer layer and the front contact comprises a tin oxide inner layer and a silicon dioxide dielectric outer layer. One or more amorphous silicon-containing thin film semiconductors can be deposited between the front and back contacts. The contacts can be positioned between a substrate and an optional superstrate. During production, the transparent conductive oxide layer of the front contact is scribed by a laser, then the amorphous silicon-containing semiconductors and inner layer of the dual layer back contact are simultaneously scribed and trenched (drilled) by the laser and the trench is subsequently filled with the same metal as the outer layer of the dual layer back contact to provide a superb mechanical and electrical interconnect between the front contact and the outer layer of the dual layer back contact. The outer layer of the dual layer back contact can then be scribed by the laser. For enhanced environmental protection, the photovoltaic modules can be encapsulated.

Producing thin film photovoltaic modules with high integrity interconnects and dual layer contacts

DOEpatents

Jansen, Kai W.; Maley, Nagi

2001-01-01

High performance photovoltaic modules are produced with improved interconnects by a special process. Advantageously, the photovoltaic modules have a dual layer back (rear) contact and a front contact with at least one layer. The front contact and the inner layer of the back contact can comprise a transparent conductive oxide. The outer layer of the back contact can comprise a metal or metal oxide. The front contact can also have a dielectric layer. In one form, the dual layer back contact comprises a zinc oxide inner layer and an aluminum outer layer and the front contact comprises a tin oxide inner layer and a silicon dioxide dielectric outer layer. One or more amorphous silicon-containing thin film semiconductors can be deposited between the front and back contacts. The contacts can be positioned between a substrate and an optional superstrate. During production, the transparent conductive oxide layer of the front contact is scribed by a laser, then the amorphous silicon-containing semiconductors and inner layer of the dual layer back contact are simultaneously scribed and trenched (drilled) by the laser and the trench is subsequently filled with the same metal as the outer layer of the dual layer back contact to provide a superb mechanical and electrical interconnect between the front contact and the outer layer of the dual layer back contact. The outer layer of the dual layer back contact can then be scribed by the laser. For enhanced environmental protection, the photovoltaic modules can be encapsulated.

Electro-deposition of superconductor oxide films

DOEpatents

Bhattacharya, Raghu N.

2001-01-01

Methods for preparing high quality superconducting oxide precursors which are well suited for further oxidation and annealing to form superconducting oxide films. The method comprises forming a multilayered superconducting precursor on a substrate by providing an electrodeposition bath comprising an electrolyte medium and a substrate electrode, and providing to the bath a plurality of precursor metal salts which are capable of exhibiting superconducting properties upon subsequent treatment. The superconducting precursor is then formed by electrodepositing a first electrodeposited (ED) layer onto the substrate electrode, followed by depositing a layer of silver onto the first electrodeposited (ED) layer, and then electrodepositing a second electrodeposited (ED) layer onto the Ag layer. The multilayered superconducting precursor is suitable for oxidation at a sufficient annealing temperature in air or an oxygen-containing atmosphere to form a crystalline superconducting oxide film.

Effect of water vapor on evolution of a thick Pt-layer modified oxide on the NiCoCrAl alloy at high temperature

NASA Astrophysics Data System (ADS)

Song, Peng; He, Xuan; Xiong, Xiping; Ma, Hongqing; Song, Qunling; Lü, Jianguo; Lu, Jiansheng

2018-03-01

To investigate the effect of water vapor on the novel Pt-containing oxide growth behavior, Pt-addition within the oxide layer on the surface of NiCoCrAl coating and furnace cycle tests were carried out at 1050 °C in air and air plus water vapor. The thick Pt-containing oxide layer on NiCoCrAl exhibits a different oxidation growth behavior compared to the conventional Pt-diffusion metallic coatings. The Pt-containing oxide after oxidation in air plus water vapor showed a much thicker oxide layer compare to the ones without Pt addition, and also presented a much better coating adhesion. During the oxidation process in air, Pt promotes the spinel (NiCr2O4) formation. However, the Cr2O3 formed in air with water vapor and fixed Pt within the complex oxide layer. The water vapor promoted the Ni and Co outer-diffusion, and combined with Pt to form CoPt compounds on the surface of the NiCoCrAl coating system.

Development of Ordered, Porous (Sub-25 nm Dimensions) Surface Membrane Structures Using a Block Copolymer Approach.

PubMed

Ghoshal, Tandra; Holmes, Justin D; Morris, Michael A

2018-05-08

In an effort to develop block copolymer lithography to create high aspect vertical pore arrangements in a substrate surface we have used a microphase separated poly(ethylene oxide) -b- polystyrene (PEO-b-PS) block copolymer (BCP) thin film where (and most unusually) PS not PEO is the cylinder forming phase and PEO is the majority block. Compared to previous work, we can amplify etch contrast by inclusion of hard mask material into the matrix block allowing the cylinder polymer to be removed and the exposed substrate subject to deep etching thereby generating uniform, arranged, sub-25 nm cylindrical nanopore arrays. Briefly, selective metal ion inclusion into the PEO matrix and subsequent processing (etch/modification) was applied for creating iron oxide nanohole arrays. The oxide nanoholes (22 nm diameter) were cylindrical, uniform diameter and mimics the original BCP nanopatterns. The oxide nanohole network is demonstrated as a resistant mask to fabricate ultra dense, well ordered, good sidewall profile silicon nanopore arrays on substrate surface through the pattern transfer approach. The Si nanopores have uniform diameter and smooth sidewalls throughout their depth. The depth of the porous structure can be controlled via the etch process.

Spectroellipsometric detection of silicon substrate damage caused by radiofrequency sputtering of niobium oxide

NASA Astrophysics Data System (ADS)

Lohner, Tivadar; Serényi, Miklós; Szilágyi, Edit; Zolnai, Zsolt; Czigány, Zsolt; Khánh, Nguyen Quoc; Petrik, Péter; Fried, Miklós

2017-11-01

Substrate surface damage induced by deposition of metal atoms by radiofrequency (rf) sputtering or ion beam sputtering onto single-crystalline silicon (c-Si) surface has been characterized earlier by electrical measurements. The question arises whether it is possible to characterize surface damage using spectroscopic ellipsometry (SE). In our experiments niobium oxide layers were deposited by rf sputtering on c-Si substrates in gas mixture of oxygen and argon. Multiple angle of incidence spectroscopic ellipsometry measurements were performed, a four-layer optical model (surface roughness layer, niobium oxide layer, native silicon oxide layer and ion implantation-amorphized silicon [i-a-Si] layer on a c-Si substrate) was created in order to evaluate the spectra. The evaluations yielded thicknesses of several nm for the i-a-Si layer. Better agreement could be achieved between the measured and the generated spectra by inserting a mixed layer (with components of c-Si and i-a-Si applying the effective medium approximation) between the silicon oxide layer and the c-Si substrate. High depth resolution Rutherford backscattering (RBS) measurements were performed to investigate the interface disorder between the deposited niobium oxide layer and the c-Si substrate. Atomic resolution cross-sectional transmission electron microscopy investigation was applied to visualize the details of the damaged subsurface region of the substrate.

Magnetoresistance enhancement in specular, bottom-pinned, Mn83Ir17 spin valves with nano-oxide layers

NASA Astrophysics Data System (ADS)

Veloso, A.; Freitas, P. P.; Wei, P.; Barradas, N. P.; Soares, J. C.; Almeida, B.; Sousa, J. B.

2000-08-01

Bottom-pinned Mn83Ir17 spin valves with enhanced specular scattering were fabricated, showing magnetoresistance (MR) values up to 13.6%, lower sheet resistance R□ and higher ΔR□. Two nano-oxide layers (NOL) are grown on both sides of the CoFe/Cu/CoFe spin valve structure by natural oxidation or remote plasma oxidation of the starting CoFe layer. Maximum MR enhancement is obtained after just 1 min plasma oxidation. Rutherford backscattering analysis shows that a 15±2 Å oxide layer grows at the expense of the initial (prior to oxidation) CoFe layer, with ˜12% reduction of the initial 40 Å CoFe thickness. X-ray reflectometry indicates that Kiessig fringes become better defined after NOL growth, indicating smoother inner interfaces, in agreement with the observed decrease of the spin valve ferromagnetic Néel coupling.

Influence of temperature on oxidation mechanisms of fiber-textured AlTiTaN coatings.

PubMed

Khetan, Vishal; Valle, Nathalie; Duday, David; Michotte, Claude; Delplancke-Ogletree, Marie-Paule; Choquet, Patrick

2014-03-26

The oxidation kinetics of AlTiTaN hard coatings deposited at 265 °C by DC magnetron sputtering were investigated between 700 and 950 °C for various durations. By combining dynamic secondary ion mass spectrometry (D-SIMS), X-ray diffraction (XRD), and transmission electron microscopy (TEM) investigations of the different oxidized coatings, we were able to highlight the oxidation mechanisms involved. The TEM cross-section observations combined with XRD analysis show that a single amorphous oxide layer comprising Ti, Al, and Ta formed at 700 °C. Above 750 °C, the oxide scale transforms into a bilayer oxide comprising an Al-rich upper oxide layer and a Ti/Ta-rich oxide layer at the interface with the coated nitride layer. From the D-SIMS analysis, it could be proposed that the oxidation mechanism was governed primarily by inward diffusion of O for temperatures of ≤700 °C, while at ≥750 °C, it is controlled by outward diffusion of Al and inward diffusion of O. Via a combination of structural and chemical analysis, it is possible to propose that crystallization of rutile lattice favors the outward diffusion of Al within the AlTiTa mixed oxide layer with an increase in the temperature of oxidation. The difference in the mechanisms of oxidation at 700 and 900 °C also influences the oxidation kinetics with respect to oxidation time. Formation of a protective alumina layer decreases the rate of oxidation at 900 °C for long durations of oxidation compared to 700 °C. Along with the oxidation behavior, the enhanced thermal stability of AlTiTaN compared to that of the TiAlN coating is illustrated.

Polymer/graphite oxide composites as high-performance materials for electric double layer capacitors

NASA Astrophysics Data System (ADS)

Tien, Chien-Pin; Teng, Hsisheng

A single graphene sheet represents a carbon material with the highest surface area available to accommodating molecules or ions for physical and chemical interactions. Here we demonstrate in an electric double layer capacitor the outstanding performance of graphite oxide for providing a platform for double layer formation. Graphite oxide is generally the intermediate compound for obtaining separated graphene sheets. Instead of reduction with hydrazine, we incorporate graphite oxide with a poly(ethylene oxide)-based polymer and anchor the graphene oxide sheets with poly(propylene oxide) diamines. This polymer/graphite oxide composite shows in a "dry" gel-electrolyte system a double layer capacitance as high as 130 F g -1. The polymer incorporation developed here can significantly diversify the application of graphene-based materials in energy storage devices.

Emplacement mechanisms of the South Kona slide complex, Hawaii Island: Sampling and observations by remotely operated vehicle Kaiko

USGS Publications Warehouse

Yokose, H.; Lipman, P.W.

2004-01-01

Emplacement of a giant submarine slide complex, offshore of South Kona, Hawaii Island, was investigated in 2001 by visual observation and in-situ sampling on the bench scarp and a megablock, during two dives utilizing the Remotely Operated Vehicle (ROV) Kaiko and its mother ship R/V Kairei. Topography of the bench scarp and megablocks were defined in 3-D perspective, using high-resolution digital bathymetric data acquired during the cruise. Compositions of 34 rock samples provide constraints on the landslide source regions and emplacement mechanisms. The bench scarp consists mainly of highly fractured, vesiculated, and oxidized a-a lavas that slumped from the subaerial flank of ancestral Mauna Loa. The megablock contains three units: block facies, matrix facies, and draped sediment. The block facies contains hyaloclastite interbedded with massive lava, which slid from the shallow submarine flank of ancestral Mauna Loa, as indicated by glassy groundmass of the hyaloclastite, low oxidation state, and low sulfur content. The matrix facies, which directly overlies the block facies and is similar to a lahar deposit, is thought to have been deposited from the water column immediately after the South Kona slide event. The draped sediment is a thin high-density turbidite layer that may be a distal facies of the Alika-2 debris-avalanche deposit; its composition overlaps with rocks from subaerial Mauna Loa. The deposits generated by the South Kona slide vary from debris avalanche deposit to turbidite. Spatial distribution of the deposits is consistent with deposits related to large landslides adjacent to other Hawaiian volcanoes and the Canary Islands. ?? Springer-Verlag 2004.

A Study on Field Emission Characteristics of Planar Graphene Layers Obtained from a Highly Oriented Pyrolyzed Graphite Block

PubMed Central

2009-01-01

This paper describes an experimental study on field emission characteristics of individual graphene layers for vacuum nanoelectronics. Graphene layers were prepared by mechanical exfoliation from a highly oriented pyrolyzed graphite block and placed on an insulating substrate, with the resulting field emission behavior investigated using a nanomanipulator operating inside a scanning electron microscope. A pair of tungsten tips controlled by the nanomanipulator enabled electric connection with the graphene layers without postfabrication. The maximum emitted current from the graphene layers was 170 nA and the turn-on voltage was 12.1 V. PMID:20596315

Solar cell collector and method for producing same

NASA Technical Reports Server (NTRS)

Evans, J. C., Jr. (Inventor)

1978-01-01

A transparent, conductive collector layer containing conductive metal channels is formed as a layer on a photovoltaic substrate by coating a photovoltaic substract with a conductive mixed metal layer. A heat sink having portions protruding from one of its surfaces is attached. These protruding portions define a continuous pattern in combination with recessed regions among them such that they are in contact with the conductive layer of the photovoltaic substrate. Heating the substrate while simultaneously oxidizing the portions of the conductive layer exposed to a gaseous oxidizing substance forced into the recessed regions of the heat sink, creates a transparent metal oxide layer on the substrate. A continous pattern of highly conductive metal channels is contained in the metal oxide layer.

Nanoscale lamellar photoconductor hybrids and methods of making same

DOEpatents

Stupp, Samuel I; Goldberger, Josh; Sofos, Marina

2013-02-05

An article of manufacture and methods of making same. In one embodiment, the article of manufacture has a plurality of zinc oxide layers substantially in parallel, wherein each zinc oxide layer has a thickness d.sub.1, and a plurality of organic molecule layers substantially in parallel, wherein each organic molecule layer has a thickness d.sub.2 and a plurality of molecules with a functional group that is bindable to zinc ions, wherein for every pair of neighboring zinc oxide layers, one of the plurality of organic molecule layers is positioned in between the pair of neighboring zinc oxide layers to allow the functional groups of the plurality of organic molecules to bind to zinc ions in the neighboring zinc oxide layers to form a lamellar hybrid structure with a geometric periodicity d.sub.1+d.sub.2, and wherein d.sub.1 and d.sub.2 satisfy the relationship of d.sub.1.ltoreq.d.sub.2.ltoreq.3d.sub.1.

Air-stable electrical conduction in oxidized poly[2-methoxy-5-(2-ethylhexyloxy)-p-phenylene vinylene] thin films

NASA Astrophysics Data System (ADS)

Hossein-Babaei, F.; Shabani, P.; Azadinia, M.

2013-11-01

Oxidation-caused electroluminescence and electrical conduction deteriorations in poly[2-methoxy-5-(2-ethylhexyloxy)-p-phenylene vinylene] (MEH-PPV) have prevented the material from being used in applications requiring air exposure. Here, we report air-stable electrical conduction in oxidized MEH-PPV layers produced by room temperature annealing of MEH-PPV thin films in air. Oxidized layers exhibit lower, but stable, conductivities. As the process is irreversible, the final conductivity is retained in vacuum, inert gas, hydrogen, and oxygen. The oxidation rates recorded at different conditions for layers of varied thickness and electrode configuration are described by a surface oxidation model. Potentials of the oxidized MEH-PPV layers in sensor technology are demonstrated.

Thermal oxidation of single crystal aluminum antimonide and materials having the same

DOEpatents

Sherohman, John William; Yee, Jick Hong; Coombs, III, Arthur William; Wu, Kuang Jen J.

2012-12-25

In one embodiment, a method for forming a non-conductive crystalline oxide layer on an AlSb crystal includes heat treating an AlSb crystal in a partial vacuum atmosphere at a temperature conducive for air adsorbed molecules to desorb, surface molecule groups to decompose, and elemental Sb to evaporate from a surface of the AlSb crystal and exposing the AlSb crystal to an atmosphere comprising oxygen to form a crystalline oxide layer on the surface of the AlSb crystal. In another embodiment, a method for forming a non-conductive crystalline oxide layer on an AlSb crystal includes heat treating an AlSb crystal in a non-oxidizing atmosphere at a temperature conducive for decomposition of an amorphous oxidized surface layer and evaporation of elemental Sb from the AlSb crystal surface and forming stable oxides of Al and Sb from residual surface oxygen to form a crystalline oxide layer on the surface of the AlSb crystal.

Color tone and interfacial microstructure of white oxide layer on commercially pure Ti and Ti-Nb-Ta-Zr alloys

NASA Astrophysics Data System (ADS)

Miura-Fujiwara, Eri; Mizushima, Keisuke; Watanabe, Yoshimi; Kasuga, Toshihiro; Niinomi, Mitsuo

2014-11-01

In this study, the relationships among oxidation condition, color tone, and the cross-sectional microstructure of the oxide layer on commercially pure (CP) Ti and Ti-36Nb-2Ta-3Zr-0.3O were investigated. “White metals” are ideal metallic materials having a white color with sufficient strength and ductility like a metal. Such materials have long been sought for in dentistry. We have found that the specific biomedical Ti alloys, such as CP Ti, Ti-36Nb-2Ta-3Zr-0.3O, and Ti-29Nb-13Ta-4.6Zr, form a bright yellowish-white oxide layer after a particular oxidation heat treatment. The brightness L* and yellowness +b* of the oxide layer on CP Ti and Ti-36Nb-2Ta-3Zr-0.3O increased with heating time and temperature. Microstructural observations indicated that the oxide layer on Ti-29Nb-13Ta-4.6Zr and Ti-36Nb-2Ta-3Zr-0.3O was dense and firm, whereas a piecrust-like layer was formed on CP Ti. The results obtained in this study suggest that oxide layer coating on Ti-36Nb-2Ta-3Zr-0.3O is an excellent technique for dental applications.

Air-Impregnated Nanoporous Anodic Aluminum Oxide Layers for Enhancing the Corrosion Resistance of Aluminum.

PubMed

Jeong, Chanyoung; Lee, Junghoon; Sheppard, Keith; Choi, Chang-Hwan

2015-10-13

Nanoporous anodic aluminum oxide layers were fabricated on aluminum substrates with systematically varied pore diameters (20-80 nm) and oxide thicknesses (150-500 nm) by controlling the anodizing voltage and time and subsequent pore-widening process conditions. The porous nanostructures were then coated with a thin (only a couple of nanometers thick) Teflon film to make the surface hydrophobic and trap air in the pores. The corrosion resistance of the aluminum substrate was evaluated by a potentiodynamic polarization measurement in 3.5 wt % NaCl solution (saltwater). Results showed that the hydrophobic nanoporous anodic aluminum oxide layer significantly enhanced the corrosion resistance of the aluminum substrate compared to a hydrophilic oxide layer of the same nanostructures, to bare (nonanodized) aluminum with only a natural oxide layer on top, and to the latter coated with a thin Teflon film. The hydrophobic nanoporous anodic aluminum oxide layer with the largest pore diameter and the thickest oxide layer (i.e., the maximized air fraction) resulted in the best corrosion resistance with a corrosion inhibition efficiency of up to 99% for up to 7 days. The results demonstrate that the air impregnating the hydrophobic nanopores can effectively inhibit the penetration of corrosive media into the pores, leading to a significant improvement in corrosion resistance.

Method of depositing an electrically conductive oxide buffer layer on a textured substrate and articles formed therefrom

DOEpatents

Paranthaman, M. Parans; Aytug, Tolga; Christen, David K.

2005-10-18

An article with an improved buffer layer architecture includes a substrate having a textured metal surface, and an electrically conductive lanthanum metal oxide epitaxial buffer layer on the surface of the substrate. The article can also include an epitaxial superconducting layer deposited on the epitaxial buffer layer. An epitaxial capping layer can be placed between the epitaxial buffer layer and the superconducting layer. A method for preparing an epitaxial article includes providing a substrate with a metal surface and depositing on the metal surface a lanthanum metal oxide epitaxial buffer layer. The method can further include depositing a superconducting layer on the epitaxial buffer layer, and depositing an epitaxial capping layer between the epitaxial buffer layer and the superconducting layer.

Method of depositing an electrically conductive oxide buffer layer on a textured substrate and articles formed therefrom

DOEpatents

Paranthaman, M. Parans; Aytug, Tolga; Christen, David K.

2003-09-09

An article with an improved buffer layer architecture includes a substrate having a textured metal surface, and an electrically conductive lanthanum metal oxide epitaxial buffer layer on the surface of the substrate. The article can also include an epitaxial superconducting layer deposited on the epitaxial buffer layer. An epitaxial capping layer can be placed between the epitaxial buffer layer and the superconducting layer. A method for preparing an epitaxial article includes providing a substrate with a metal surface and depositing on the metal surface a lanthanum metal oxide epitaxial buffer layer. The method can further include depositing a superconducting layer on the epitaxial buffer layer, and depositing an epitaxial capping layer between the epitaxial buffer layer and the superconducting layer.

Charge transport model in solid-state avalanche amorphous selenium and defect suppression design

NASA Astrophysics Data System (ADS)

Scheuermann, James R.; Miranda, Yesenia; Liu, Hongyu; Zhao, Wei

2016-01-01

Avalanche amorphous selenium (a-Se) in a layer of High Gain Avalanche Rushing Photoconductor (HARP) is being investigated for its use in large area medical imagers. Avalanche multiplication of photogenerated charge requires electric fields greater than 70 V μm-1. For a-Se to withstand this high electric field, blocking layers are used to prevent the injection of charge carriers from the electrodes. Blocking layers must have a high injection barrier and deep trapping states to reduce the electric field at the interface. In the presence of a defect in the blocking layer, a distributed resistive layer (DRL) must be included into the structure to build up space charge and reduce the electric field in a-Se and the defect. A numerical charge transport model has been developed to optimize the properties of blocking layers used in various HARP structures. The model shows the incorporation of a DRL functionality into the p-layer can reduce dark current at a point defect by two orders of magnitude by reducing the field in a-Se to the avalanche threshold. Hole mobility in a DRL of ˜10-8 cm2 V-1 s-1 at 100 V μm-1 as demonstrated by the model can be achieved experimentally by varying the hole mobility of p-type organic or inorganic semiconductors through doping, e.g., using Poly(9-vinylcarbozole) doped with 1%-3% (by weight) of poly(3-hexylthiopene).

Structure of oxides prepared by decomposition of layered double Mg–Al and Ni–Al hydroxides

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cherepanova, Svetlana V.; Novosibirsk State University, Novosibirsk; Leont’eva, Natalya N., E-mail: n_n_leonteva@list.ru

2015-05-15

Abstracts: Thermal decomposition of Mg–Al and Ni–Al layered double hydroxides LDH at temperatures lower than 800 °C leads to the formation of oxides with different structures. Mg–Al oxide has a very defective structure and consists of octahedral layers as in periclase MgO and mixed octahedral–tetrahedral layers as in spinel MgAl{sub 2}O{sub 4}. Mixed Ni–Al oxide has a sandwich-like structure, consisting of a core with Al-doped NiO-like structure and some surface layers with spinel NiAl{sub 2}O{sub 4} structure epitaxial connected with the core. Suggested models were verified by simulation of X-ray diffraction patterns using DIFFaX code, as well as HRTEM, IR-,more » UV-spectroscopies, and XPS. - Graphical abstract: In the Mg–Al layered double hydroxide Al{sup 3+} ions migrate into interlayers during decomposition. The Mg–Al oxide represents sequence of octahedral and octahedral–tetrahedral spinel layers with vacancies. The Ni–Al oxide has a sandwich-like structure with NiO-like core and surface spinel layers as a result of migration of Al{sup 3+} ions on the surface. The models explain the presence and absence of “memory effect” for the Mg–Al and Ni–Al oxides, respectively. - Highlights: • We study products of Mg(Ni)–Al LDH decomposition by calcination at 500(400)–800 °C. • In Mg–Al/Ni–Al LDH Al ions migrate into interlayers/on the surface during decomposition. • Mg–Al oxide represents sequence of periclase- and spinel-like layers with vacancies. • Ni–Al oxide has a sandwich-like structure with NiO-like core and surface spinel layers. • The models explain the presence/absence of “memory effect” for Mg–Al/Ni–Al oxides.« less

Screening method for selecting semiconductor substrates having defects below a predetermined level in an oxide layer

DOEpatents

Warren, William L.; Vanheusden, Karel J. R.; Schwank, James R.; Fleetwood, Daniel M.; Shaneyfelt, Marty R.; Winokur, Peter S.; Devine, Roderick A. B.

1998-01-01

A method for screening or qualifying semiconductor substrates for integrated circuit fabrication. The method comprises the steps of annealing at least one semiconductor substrate at a first temperature in a defect-activating ambient (e.g. hydrogen, forming gas, or ammonia) for sufficient time for activating any defects within on oxide layer of the substrate; measuring a defect-revealing electrical characteristic of at least a portion of the oxide layer for determining a quantity of activated defects therein; and selecting substrates for which the quantity of activated defects is below a predetermined level. The defect-revealing electrical characteristic may be a capacitance-versus-voltage (C-V) characteristic or a current-versus-voltage (I-V) characteristic that is dependent on an electrical charge in the oxide layer generated by the activated defects. Embodiments of the present invention may be applied for screening any type of semiconductor substrate or wafer having an oxide layer formed thereon or therein. This includes silicon-on-insulator substrates formed by a separation by the implantation of oxygen (SIMOX) process or the bond and etch back silicon-on-insulator (BESOI) process, as well as silicon substrates having a thermal oxide layer or a deposited oxide layer.

Effect of native oxide layers on copper thin-film tensile properties: A reactive molecular dynamics study

DOE Office of Scientific and Technical Information (OSTI.GOV)

Skarlinski, Michael D., E-mail: michael.skarlinski@rochester.edu; Quesnel, David J.; Department of Mechanical Engineering, University of Rochester, Rochester, New York 14627

2015-12-21

Metal-oxide layers are likely to be present on metallic nano-structures due to either environmental exposure during use, or high temperature processing techniques such as annealing. It is well known that nano-structured metals have vastly different mechanical properties from bulk metals; however, difficulties in modeling the transition between metallic and ionic bonding have prevented the computational investigation of the effects of oxide surface layers. Newly developed charge-optimized many body [Liang et al., Mater. Sci. Eng., R 74, 255 (2013)] potentials are used to perform fully reactive molecular dynamics simulations which elucidate the effects that metal-oxide layers have on the mechanical propertiesmore » of a copper thin-film. Simulated tensile tests are performed on thin-films while using different strain-rates, temperatures, and oxide thicknesses to evaluate changes in yield stress, modulus, and failure mechanisms. Findings indicate that copper-thin film mechanical properties are strongly affected by native oxide layers. The formed oxide layers have an amorphous structure with lower Cu-O bond-densities than bulk CuO, and a mixture of Cu{sub 2}O and CuO charge character. It is found that oxidation will cause modifications to the strain response of the elastic modulii, producing a stiffened modulii at low temperatures (<75 K) and low strain values (<5%), and a softened modulii at higher temperatures. While under strain, structural reorganization within the oxide layers facilitates brittle yielding through nucleation of defects across the oxide/metal interface. The oxide-free copper thin-film yielding mechanism is found to be a tensile-axis reorientation and grain creation. The oxide layers change the observed yielding mechanism, allowing for the inner copper thin-film to sustain an FCC-to-BCC transition during yielding. The mechanical properties are fit to a thermodynamic model based on classical nucleation theory. The fit implies that the oxidation of the films reduces the activation volume for yielding.« less

W-containing oxide layers obtained on aluminum and titanium by PEO as catalysts in thiophene oxidation

NASA Astrophysics Data System (ADS)

Rudnev, V. S.; Lukiyanchuk, I. V.; Vasilyeva, M. S.; Morozova, V. P.; Zelikman, V. M.; Tarkhanova, I. G.

2017-11-01

W-containing oxide layers fabricated on titanium and aluminum alloys by Plasma electrolytic oxidation (PEO) have been tested in the reaction of the peroxide oxidation of thiophene. Samples with two types of coatings have been investigated. Coatings I contained tungsten oxide in the matrix and on the surface of amorphous silica-titania or silica-alumina layers, while coatings II comprised crystalline WO3 and/or Al2(WO4)3. Aluminum-supported catalyst containing a smallest amount of transition metals in the form of tungsten oxides and manganese oxides in low oxidation levels showed high activity and stability.

Eudialyte-group minerals in rocks of Lovozero layered complex at Mt. Karnasurt and Mt. Kedykvyrpakhk

NASA Astrophysics Data System (ADS)

Ivanyuk, G. Yu.; Pakhomovsky, Ya. A.; Yakovenchuk, V. N.

2015-12-01

Eudialyte-bearing interbeds within layers I-4 (Mt. Karnasurt) and II-4 (Mt. Kedykvyrpakhk) in the layered complex of the Lovozero Pluton are localized symmetrically relative to the loparite-bearing ijolite-malignite layer; the content of eudialyte decreases from underlying nepheline syenite to overlying foidolite. Eudialyte-group minerals fill the interstices between nepheline, sodalite, and microcline-perthite crystals in all rock types and are partially replaced with georgechaoite and minerals of the lovozerite group as a result of hydrothermal alteration. Variations in the chemical composition of the eudialyte-group minerals are mainly controlled by block substitution NaFeZrCl ↔ LnMn(Nb,Ti)S producing eudialyte proper, manganoeudialyte (sharply predominant), kentbrooksite, alluaivite, and a phase intermediate between manganoeudialyte and alluaivite. As the total Ln2O3 content increases, the relative amounts of Ce and La oxides increases linearly in the proportion Ce2O3: La2O3 = 2.5: 1. In the phases containing lower than 3 wt % La2O3, Nd becomes the next REE after Ce. It is very likely that (mangano)eudialyte was mostly formed after parakeldyshite and other anhydrous zirconium-silicate under effect of residual fluids enriched in Ca and Mn, which took part in fenitization of basalt, tuff, and tuffite of the Lovozero Formation.

NEUTRON-IRRADIATED STRUCTURES

DOEpatents

Ashley, E.L.; Ashley, J.W.; Bowker, H.W.; Hall, R.H.; Kendall, J.W.

1959-02-01

A moderator structure is described for a nuclear reactor of the heterogensous type wherein a large mass of moderator is provided with channels therethrough for the introduction of uranium serving as nuclear fuel and for the passage of a cooling fluid. The structure is comprised of blocks of moderator material in superposed horizontal layers, the blocks of each layer being tied together with spaces between them and oriented to have horizontal Wigner growth. The ties are strips of moderator material, the same as the blocks, with transverse Wigner growth, disposed horizontally along lines crossing at vertical axes of the blocks. The blocks are preferably rectangular with a larger or length dimension transverse to the directions of Wiguer growth and are stood on end to provide for horizontal growth.

Nanopatterned articles produced using reconstructed block copolymer films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Russell, Thomas P.; Park, Soojin; Wang;, Jia-Yu

Nanopatterned surfaces are prepared by a method that includes forming a block copolymer film on a substrate, annealing and surface reconstructing the block copolymer film to create an array of cylindrical voids, depositing a metal on the surface-reconstructed block copolymer film, and heating the metal-coated block copolymer film to redistribute at least some of the metal into the cylindrical voids. When very thin metal layers and low heating temperatures are used, metal nanodots can be formed. When thicker metal layers and higher heating temperatures are used, the resulting metal structure includes nanoring-shaped voids. The nanopatterned surfaces can be transferred tomore » the underlying substrates via etching, or used to prepare nanodot- or nanoring-decorated substrate surfaces.« less

Method of producing nanopatterned articles using surface-reconstructed block copolymer films

DOEpatents

Russell, Thomas P; Park, Soojin; Wang, Jia-Yu; Kim, Bokyung

2013-08-27

Nanopatterned surfaces are prepared by a method that includes forming a block copolymer film on a substrate, annealing and surface reconstructing the block copolymer film to create an array of cylindrical voids, depositing a metal on the surface-reconstructed block copolymer film, and heating the metal-coated block copolymer film to redistribute at least some of the metal into the cylindrical voids. When very thin metal layers and low heating temperatures are used, metal nanodots can be formed. When thicker metal layers and higher heating temperatures are used, the resulting metal structure includes nanoring-shaped voids. The nanopatterned surfaces can be transferred to the underlying substrates via etching, or used to prepare nanodot- or nanoring-decorated substrate surfaces.

Fabrication technology of CNT-Nickel Oxide based planar pseudocapacitor for MEMS and NEMS

NASA Astrophysics Data System (ADS)

Lebedev, E. A.; Kitsyuk, E. P.; Gavrilin, I. M.; Gromov, D. G.; Gruzdev, N. E.; Gavrilov, S. A.; Dronov, A. A.; Pavlov, A. A.

2015-11-01

Fabrication technology of planar pseudocapacitor (PsC) based on carbon nanotube (CNT) forest, synthesized using plasma enhanced chemical vapor deposition (PECVD) method, covered with thin nickel oxide layer deposited by successive ionic layer adsorption and reaction (SILAR) method, is demonstrated. Dependences of deposited oxide layers thickness on device specific capacities is studied. It is shown that pseudocapacity of nickel oxide thin layer increases specific capacity of the CNT's based device up to 2.5 times.

Modification of surface oxide layers of titanium targets for increasing lifetime of neutron tubes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zakharov, A. M., E-mail: zam@plasma.mephi.ru; Dvoichenkova, O. A.; Evsin, A. E.

The peculiarities of interaction of hydrogen ions with a titanium target and its surface oxide layer were studied. Two ways of modification of the surface oxide layers of titanium targets for increasing the lifetime of neutron tubes were proposed: (1) deposition of an yttrium oxide barrier layer on the target surface; (2) implementation of neutron tube work regime in which the target is irradiated with ions with energies lower than 1000 eV between high-energy ion irradiation pulses.

Universal Strategy To Reduce Noise Current for Sensitive Organic Photodetectors.

PubMed

Xiong, Sixing; Li, Lingliang; Qin, Fei; Mao, Lin; Luo, Bangwu; Jiang, Youyu; Li, Zaifang; Huang, Jinsong; Zhou, Yinhua

2017-03-15

Low noise current is critical for achieving high-detectivity organic photodetectors. Inserting charge-blocking layers is an effective approach to suppress the reverse-biased dark current. However, in solution-processed organic photodetectors, the charge-transport material needs to be dissolved in solvents that do not dissolve the underneath light-absorbing layer, which is not always possible for all kinds of light-absorbing materials developed. Here, we introduce a universal strategy of transfer-printing a conjugated polymer, poly(3-hexylthiophene) (P3HT), as the electron-blocking layer to realize highly sensitive photodetectors. The transfer-printed P3HT layers substantially and universally reduced the reverse-biased dark current by about 3 orders of magnitude for various photodetectors with different active layers. These photodetectors can detect the light signal as weak as several picowatts per square centimeter, and the device detectivity is over 10 12 Jones. The results suggest that the strategy of transfer-printing P3HT films as the electron-blocking layer is universal and effective for the fabrication of sensitive organic photodetectors.

Significant performance enhancement of inverted organic light-emitting diodes by using ZnIx as a hole-blocking layer

NASA Astrophysics Data System (ADS)

Cheng, Chuan-Hui; Zhang, Bi-Long; Sun, Chao; Li, Ruo-Xuan; Wang, Yuan; Tian, Wen-Ming; Zhao, Chun-Yi; Jin, Sheng-Ye; Liu, Wei-Feng; Luo, Ying-Min; Du, Guo-Tong; Cong, Shu-Lin

2017-06-01

A highly efficient inverted organic light emitting diode using 1.0 nm-thick ZnIx as a hole-blocking layer is developed. We fabricate devices with the configuration ITO/ZnIx (1.0 nm)/Alq3 (50 nm)/NPB (50 nm)/MoO3 (6.0 nm)/Al (100 nm). The deposition of a ZnIx layer increases the maximum luminance by two orders of magnitude from 13.4 to 3566.1 cd/m2. In addition, the maximum current efficiency and power efficiency are increased by three orders of magnitude, and the turn-on voltage to reach 1 cd/m2 decreases from 13 to 8 V. The results suggest that the electron injection efficiency is not improved by introducing a ZnIx layer. Instead, the improved device performance originates from the strong hole-blocking ability of ZnIx. This work indicates that layered materials may lead to novel applications in optoelectronic devices.

Oxidized film structure and method of making epitaxial metal oxide structure

DOEpatents

Gan, Shupan [Richland, WA; Liang, Yong [Richland, WA

2003-02-25

A stable oxidized structure and an improved method of making such a structure, including an improved method of making an interfacial template for growing a crystalline metal oxide structure, are disclosed. The improved method comprises the steps of providing a substrate with a clean surface and depositing a metal on the surface at a high temperature under a vacuum to form a metal-substrate compound layer on the surface with a thickness of less than one monolayer. The compound layer is then oxidized by exposing the compound layer to essentially oxygen at a low partial pressure and low temperature. The method may further comprise the step of annealing the surface while under a vacuum to further stabilize the oxidized film structure. A crystalline metal oxide structure may be subsequently epitaxially grown by using the oxidized film structure as an interfacial template and depositing on the interfacial template at least one layer of a crystalline metal oxide.

Thermal conductivity and thermal boundary resistance of atomic layer deposited high-k dielectric aluminum oxide, hafnium oxide, and titanium oxide thin films on silicon

NASA Astrophysics Data System (ADS)

Scott, Ethan A.; Gaskins, John T.; King, Sean W.; Hopkins, Patrick E.

2018-05-01

The need for increased control of layer thickness and uniformity as device dimensions shrink has spurred increased use of atomic layer deposition (ALD) for thin film growth. The ability to deposit high dielectric constant (high-k) films via ALD has allowed for their widespread use in a swath of optical, optoelectronic, and electronic devices, including integration into CMOS compatible platforms. As the thickness of these dielectric layers is reduced, the interfacial thermal resistance can dictate the overall thermal resistance of the material stack compared to the resistance due to the finite dielectric layer thickness. Time domain thermoreflectance is used to interrogate both the thermal conductivity and the thermal boundary resistance of aluminum oxide, hafnium oxide, and titanium oxide films on silicon. We calculate a representative design map of effective thermal resistances, including those of the dielectric layers and boundary resistances, as a function of dielectric layer thickness, which will be of great importance in predicting the thermal resistances of current and future devices.

Dynamic layer rearrangement during growth of layered oxide films by molecular beam epitaxy

DOE PAGES

Lee, J. H.; Luo, G.; Tung, I. C.; ...

2014-08-03

The A n+1B nO 3n+1 Ruddlesden–Popper homologous series offers a wide variety of functionalities including dielectric, ferroelectric, magnetic and catalytic properties. Unfortunately, the synthesis of such layered oxides has been a major challenge owing to the occurrence of growth defects that result in poor materials behaviour in the higher-order members. To understand the fundamental physics of layered oxide growth, we have developed an oxide molecular beam epitaxy system with in situ synchrotron X-ray scattering capability. We present results demonstrating that layered oxide films can dynamically rearrange during growth, leading to structures that are highly unexpected on the basis of themore » intended layer sequencing. Theoretical calculations indicate that rearrangement can occur in many layered oxide systems and suggest a general approach that may be essential for the construction of metastable Ruddlesden–Popper phases. Lastly, we demonstrate the utility of the new-found growth strategy by performing the first atomically controlled synthesis of single-crystalline La 3Ni 2O 7.« less

Effects of iron content in Ni-Cr-xFe alloys and immersion time on the oxide films formed in a simulated PWR water environment

NASA Astrophysics Data System (ADS)

Ru, Xiangkun; Lu, Zhanpeng; Chen, Junjie; Han, Guangdong; Zhang, Jinlong; Hu, Pengfei; Liang, Xue

2017-12-01

The iron content in Ni-Cr-xFe (x = 0-9 at.%) alloys strongly affected the properties of oxide films after 978 h of immersion in the simulated PWR primary water environment at 310 °C. Increasing the iron content in the alloys increased the amount of iron-bearing polyhedral spinel oxide particles in the outer oxide layer and increased the local oxidation penetrations into the alloy matrix from the chromium-rich inner oxide layer. The effects of iron content in the alloys on the oxide film properties after 500 h of immersion were less significant than those after 978 h. Iron content increased, and chromium content decreased, in the outer oxide layer with increasing iron content in the alloys. Increasing the immersion time facilitated the formation of the local oxidation penetrations along the matrix/film interface and the nickel-bearing spinel oxides in the outer oxide layer.

Structure and nano-mechanical characteristics of surface oxide layers on a metallic glass.

PubMed

Caron, A; Qin, C L; Gu, L; González, S; Shluger, A; Fecht, H-J; Louzguine-Luzgin, D V; Inoue, A

2011-03-04

Owing to their low elastic moduli, high specific strength and excellent processing characteristics in the undercooled liquid state, metallic glasses are promising materials for applications in micromechanical systems. With miniaturization of metallic mechanical components down to the micrometer scale, the importance of a native oxide layer on a glass surface is increasing. In this work we use TEM and XPS to characterize the structure and properties of the native oxide layer grown on Ni(62)Nb(38) metallic glass and their evolution after annealing in air. The thickness of the oxide layer almost doubled after annealing. In both cases the oxide layer is amorphous and consists predominantly of Nb oxide. We investigate the friction behavior at low loads and in ambient conditions (i.e. at T = 295 K and 60% air humidity) of both as-cast and annealed samples by friction force microscopy. After annealing the friction coefficient is found to have significantly increased. We attribute this effect to the increase of the mechanical stability of the oxide layer upon annealing.

A Perron-Frobenius theory for block matrices associated to a multiplex network

NASA Astrophysics Data System (ADS)

Romance, Miguel; Solá, Luis; Flores, Julio; García, Esther; García del Amo, Alejandro; Criado, Regino

2015-03-01

The uniqueness of the Perron vector of a nonnegative block matrix associated to a multiplex network is discussed. The conclusions come from the relationships between the irreducibility of some nonnegative block matrix associated to a multiplex network and the irreducibility of the corresponding matrices to each layer as well as the irreducibility of the adjacency matrix of the projection network. In addition the computation of that Perron vector in terms of the Perron vectors of the blocks is also addressed. Finally we present the precise relations that allow to express the Perron eigenvector of the multiplex network in terms of the Perron eigenvectors of its layers.

Investigations into the structure of PEO-layers for understanding of layer formation

NASA Astrophysics Data System (ADS)

Friedemann, A. E. R.; Thiel, K.; Haßlinger, U.; Ritter, M.; Gesing, Th. M.; Plagemann, P.

2018-06-01

Plasma electrolytic oxidation (PEO) is a type of high-voltage anodic oxidation process capable of producing a thick oxide layer with a wide variety of structural and chemical properties influenced by the electrolytic system. This process enables the combined adjustment of various characteristics, i.e. the morphology and chemical composition. The procedure facilitates the possibility of generating an individual structure as well as forming a crystalline surface in a single step. A highly porous surface with a high crystalline content consisting of titanium dioxide phases is ensured through the process of plasma electrolytic oxidizing pure titanium. In the present study plasma electrolytic oxidized TiO2-layers were investigated regarding their crystallinity through the layer thickness. The layers were prepared with a high applied voltage of 280 V to obtain a PEO-layer with highly crystalline anatase and rutile amounts. Raman spectroscopy and electron backscatter diffraction (EBSD) were selected to clarify the structure of the oxide layer with regard to its crystallinity and phase composition. The composition of the TiO2-phases is more or less irregularly distributed as a result of the higher energy input on the uppermost side of the layer. Scanning transmission electron microscopy (STEM) provided a deeper understanding of the structure and the effects of plasma discharges on the layer. It was observed that the plasma discharges have a strong influence on crystallite formation on top of the oxide layer and also at the boundary layer to the titanium substrate. Therefore, small crystallites of TiO2 could be detected in these regions. In addition, it was shown that amorphous TiO2 phases are formed around the characteristic pore structures, which allows the conclusion to be drawn that a rapid cooling from the gas phase had to take place in these areas.

Polycrystalline ferroelectric or multiferroic oxide articles on biaxially textured substrates and methods for making same

DOE Office of Scientific and Technical Information (OSTI.GOV)

Goyal, Amit; Shin, Junsoo

A polycrystalline ferroelectric and/or multiferroic oxide article includes a substrate having a biaxially textured surface; at least one biaxially textured buffer layer supported by the substrate; and a biaxially textured ferroelectric or multiferroic oxide layer supported by the buffer layer. Methods for making polycrystalline ferroelectric and/or multiferroic oxide articles are also disclosed.

Traffic sign recognition based on deep convolutional neural network

NASA Astrophysics Data System (ADS)

Yin, Shi-hao; Deng, Ji-cai; Zhang, Da-wei; Du, Jing-yuan

2017-11-01

Traffic sign recognition (TSR) is an important component of automated driving systems. It is a rather challenging task to design a high-performance classifier for the TSR system. In this paper, we propose a new method for TSR system based on deep convolutional neural network. In order to enhance the expression of the network, a novel structure (dubbed block-layer below) which combines network-in-network and residual connection is designed. Our network has 10 layers with parameters (block-layer seen as a single layer): the first seven are alternate convolutional layers and block-layers, and the remaining three are fully-connected layers. We train our TSR network on the German traffic sign recognition benchmark (GTSRB) dataset. To reduce overfitting, we perform data augmentation on the training images and employ a regularization method named "dropout". The activation function we employ in our network adopts scaled exponential linear units (SELUs), which can induce self-normalizing properties. To speed up the training, we use an efficient GPU to accelerate the convolutional operation. On the test dataset of GTSRB, we achieve the accuracy rate of 99.67%, exceeding the state-of-the-art results.

Clustering network layers with the strata multilayer stochastic block model.

PubMed

Stanley, Natalie; Shai, Saray; Taylor, Dane; Mucha, Peter J

2016-01-01

Multilayer networks are a useful data structure for simultaneously capturing multiple types of relationships between a set of nodes. In such networks, each relational definition gives rise to a layer. While each layer provides its own set of information, community structure across layers can be collectively utilized to discover and quantify underlying relational patterns between nodes. To concisely extract information from a multilayer network, we propose to identify and combine sets of layers with meaningful similarities in community structure. In this paper, we describe the "strata multilayer stochastic block model" (sMLSBM), a probabilistic model for multilayer community structure. The central extension of the model is that there exist groups of layers, called "strata", which are defined such that all layers in a given stratum have community structure described by a common stochastic block model (SBM). That is, layers in a stratum exhibit similar node-to-community assignments and SBM probability parameters. Fitting the sMLSBM to a multilayer network provides a joint clustering that yields node-to-community and layer-to-stratum assignments, which cooperatively aid one another during inference. We describe an algorithm for separating layers into their appropriate strata and an inference technique for estimating the SBM parameters for each stratum. We demonstrate our method using synthetic networks and a multilayer network inferred from data collected in the Human Microbiome Project.

Clustering network layers with the strata multilayer stochastic block model

PubMed Central

Stanley, Natalie; Shai, Saray; Taylor, Dane; Mucha, Peter J.

2016-01-01

Multilayer networks are a useful data structure for simultaneously capturing multiple types of relationships between a set of nodes. In such networks, each relational definition gives rise to a layer. While each layer provides its own set of information, community structure across layers can be collectively utilized to discover and quantify underlying relational patterns between nodes. To concisely extract information from a multilayer network, we propose to identify and combine sets of layers with meaningful similarities in community structure. In this paper, we describe the “strata multilayer stochastic block model” (sMLSBM), a probabilistic model for multilayer community structure. The central extension of the model is that there exist groups of layers, called “strata”, which are defined such that all layers in a given stratum have community structure described by a common stochastic block model (SBM). That is, layers in a stratum exhibit similar node-to-community assignments and SBM probability parameters. Fitting the sMLSBM to a multilayer network provides a joint clustering that yields node-to-community and layer-to-stratum assignments, which cooperatively aid one another during inference. We describe an algorithm for separating layers into their appropriate strata and an inference technique for estimating the SBM parameters for each stratum. We demonstrate our method using synthetic networks and a multilayer network inferred from data collected in the Human Microbiome Project. PMID:28435844

CH₃NH₃PbI₃-based planar solar cells with magnetron-sputtered nickel oxide.

PubMed

Cui, Jin; Meng, Fanping; Zhang, Hua; Cao, Kun; Yuan, Huailiang; Cheng, Yibing; Huang, Feng; Wang, Mingkui

2014-12-24

Herein we report an investigation of a CH3NH3PbI3 planar solar cell, showing significant power conversion efficiency (PCE) improvement from 4.88% to 6.13% by introducing a homogeneous and uniform NiO blocking interlayer fabricated with the reactive magnetron sputtering method. The sputtered NiO layer exhibits enhanced crystallization, high transmittance, and uniform surface morphology as well as a preferred in-plane orientation of the (200) plane. The PCE of the sputtered-NiO-based perovskite p-i-n planar solar cell can be further promoted to 9.83% when a homogeneous and dense perovskite layer is formed with solvent-engineering technology, showing an impressive open circuit voltage of 1.10 V. This is about 33% higher than that of devices using the conventional spray pyrolysis of NiO onto a transparent conducting glass. These results highlight the importance of a morphology- and crystallization-compatible interlayer toward a high-performance inverted perovskite planar solar cell.

Gas Classification Using Deep Convolutional Neural Networks.

PubMed

Peng, Pai; Zhao, Xiaojin; Pan, Xiaofang; Ye, Wenbin

2018-01-08

In this work, we propose a novel Deep Convolutional Neural Network (DCNN) tailored for gas classification. Inspired by the great success of DCNN in the field of computer vision, we designed a DCNN with up to 38 layers. In general, the proposed gas neural network, named GasNet, consists of: six convolutional blocks, each block consist of six layers; a pooling layer; and a fully-connected layer. Together, these various layers make up a powerful deep model for gas classification. Experimental results show that the proposed DCNN method is an effective technique for classifying electronic nose data. We also demonstrate that the DCNN method can provide higher classification accuracy than comparable Support Vector Machine (SVM) methods and Multiple Layer Perceptron (MLP).

Gas Classification Using Deep Convolutional Neural Networks

PubMed Central

Peng, Pai; Zhao, Xiaojin; Pan, Xiaofang; Ye, Wenbin

2018-01-01

In this work, we propose a novel Deep Convolutional Neural Network (DCNN) tailored for gas classification. Inspired by the great success of DCNN in the field of computer vision, we designed a DCNN with up to 38 layers. In general, the proposed gas neural network, named GasNet, consists of: six convolutional blocks, each block consist of six layers; a pooling layer; and a fully-connected layer. Together, these various layers make up a powerful deep model for gas classification. Experimental results show that the proposed DCNN method is an effective technique for classifying electronic nose data. We also demonstrate that the DCNN method can provide higher classification accuracy than comparable Support Vector Machine (SVM) methods and Multiple Layer Perceptron (MLP). PMID:29316723

System and Method for Fabricating Super Conducting Circuitry on Both Sides of an Ultra-Thin Layer

NASA Technical Reports Server (NTRS)

Brown, Ari D. (Inventor); Mikula, Vilem (Inventor)

2017-01-01

A method of fabricating circuitry in a wafer includes depositing a superconducting metal on a silicon on insulator wafer having a handle wafer, coating the wafer with a sacrificial layer and bonding the wafer to a thermally oxide silicon wafer with a first epoxy. The method includes flipping the wafer, thinning the flipped wafer by removing a handle wafer, etching a buried oxide layer, depositing a superconducting layer, bonding the wafer to a thermally oxidized silicon wafer having a handle wafer using an epoxy, flipping the wafer again, thinning the flipped wafer, etching a buried oxide layer from the wafer and etching the sacrificial layer from the wafer. The result is a wafer having superconductive circuitry on both sides of an ultra-thin silicon layer.

Spin dependent transport and spin transfer in nanoconstrictions and current confined nanomagnets

NASA Astrophysics Data System (ADS)

Ozatay, Ozhan

In this thesis, I have employed point contact spectroscopy to determine the nature of electron transport across constrained domain walls in a ferromagnetic nanocontact and to uncover the relationship between ballisticity of electron transport and domain wall magnetoresistance. In the range of hole sizes studied (from 10 to 3 nm) the resulting magnetoresistance was found to be less than 0.5% and one that increases with decreasing contact size. I have used point contacts as local probes, to study the spin dependent transport across Ferromagnet/Normal Metal/Ferromagnet(FM/NM/FM) trilayers as well as the consequences of localized spin polarized current injection into a nano magnet on spin angular momentum transfer and high frequency magnetization dynamics. I have demonstrated that absolute values for spin transfer switching critical currents are reduced in this new geometry as compared to uniform current injection. I have also performed micromagnetic simulations to determine the evolution of magnetization under the application of magnetic fields and currents to gain more insights into experimental results. I have used Scanning Transmission Electron Microscopy (STEM), X-Ray Photoemission Spectroscopy (XPS) and Electron Energy Loss Spectroscopy (EELS) techniques to characterize the interfacial mixing and oxygen diffusion in the metallic multilayers of interest. I have shown that the Ta/CuOx bilayer structure provides a smooth substrate by improving interfacial roughness due to grain boundary diffusion of oxygen and reaction with Ta that fills in the grain boundary gaps in Cu. Analysis of the Py/AlOx interface proved a strong oxidation passivation on the Py surface by Al coating accompanied by Fe segregation into the alumina. I have utilized the characterization results to design a new nanomagnet whose sidewalls are protected from adventitious sidewall oxide layers and yields improved device performance. The oxide layers that naturally develop at the sidewalls of Py nanomagnets cause an enhancement in magnetic damping especially for temperatures below the blocking temperature of the AFM layer (≤40K). Studies with pillars protected by Al coating and ones with more NiO coating (˜2.5 nm) shed light onto the role of surface oxides in determining temperature dependent behaviour of both spin torque and field driven switching characteristics.

Macroscopic assembled, ultrastrong and H2SO4-resistant fibres of polymer-grafted graphene oxide

PubMed Central

Zhao, Xiaoli; Xu, Zhen; Zheng, Bingna; Gao, Chao

2013-01-01

Nacre realizes strength and toughness through hierarchical designs with primary “brick and mortar” structures of alternative arrangement of nanoplatelets and biomacromolecules, and these have inspired the fabrication of nanocomposites for decades. However, to simultaneously solve the three critical problems of phase separation, low interfacial strength and random orientation of nanofillers for nanocomposites is a great challenge yet. Here we demonstrate that polymer-grafted graphene oxide sheets are exceptional building blocks for nanocomposites. Their liquid crystalline dispersions can be wet-spun into continuous fibres. Because of well-ordering and efficient load transfer, the composites show remarkable tensile strength (500 MPa), three to four times higher than nacre. The uniform layered microstructures and strong interlayer interactions also endow the fibres good resistance to chemicals including 98% sulfuric acid. We studied the enhancing effect of nanofillers with fraction in a whole range (0–100%), and proposed an equation to depict the relationship. PMID:24196491

Semiconducting large bandgap oxides as potential thermoelectric materials for high-temperature power generation?

NASA Astrophysics Data System (ADS)

Backhaus-Ricoult, M.; Rustad, J.; Moore, L.; Smith, C.; Brown, J.

2014-08-01

Semiconducting large bandgap oxides are considered as interesting candidates for high-temperature thermoelectric power generation (700-1,200 °C) due to their stability, lack of toxicity and low cost, but so far they have not reached sufficient performance for extended application. In this review, we summarize recent progress on thermoelectric oxides, analyze concepts for tuning semiconductor thermoelectric properties with view of their applicability to oxides and determine key drivers and limitations for electrical and thermal transport properties in oxides based on our own experimental work and literature results. For our experimental assessment, we have selected representative multicomponent oxides that range from materials with highly symmetric crystal structure (SrTiO3 perovskite) over oxides with large densities of planar crystallographic defects (Ti n O2 n-1 Magnéli phases with a single type of shear plane, NbO x block structures with intersecting shear planes and WO3- x with more defective block and channel structures) to layered superstructures (Ca3Co4O9 and double perovskites) and also include a wide range of their composites with a variety of second phases. Crystallographic or microstructural features of these oxides are in 0.3-2 nm size range, so that oxide phonons can efficiently interact with them. We explore in our experiments the effects of doping, grain size, crystallographic defects, superstructures, second phases, texturing and (to a limited extend) processing on electric conductivity, Seebeck coefficient, thermal conductivity and figure of merit. Jonker and lattice-versus-electrical conductivity plots are used to compare specific materials and material families and extract levers for future improvement of oxide thermoelectrics. We show in our work that oxygen vacancy doping (reduction) is a more powerful driver for improving the power factor for SrTiO3, TiO2 and NbO x than heterovalent doping. Based on our Seebeck-conductivity plots, we derived a set of highest achievable power factors. We met these best values in our own experiments for our titanium oxide- and niobium oxide-based materials. For strontium titanate-based materials, the estimated highest power factor was not reached; further material improvement is possible and can be reached for materials with higher carrier densities. Our results show that periodic crystallographic defects and superstructures are most efficient in reducing the lattice thermal conductivity in oxides, followed by hetero- and homovalent doping. Due to the small phonon mean free path in oxides, grain boundary scattering in nanoceramics or materials with nanodispersions is much less efficient. We investigated the impact of texturing in Ca3Co4O9 ceramics on thermoelectric performance; we did not find any improvement in the overall in-plane performance of a textured ceramic compared to the corresponding random ceramic.

Phosphorene-directed self-assembly of asymmetric PS-b-PMMA block copolymer for perpendicularly-oriented sub-10 nm PS nanopore arrays

NASA Astrophysics Data System (ADS)

Zhang, Ziming; Zheng, Lu; Khurram, Muhammad; Yan, Qingfeng

2017-10-01

Few-layer black phosphorus, also known as phosphorene, is a new two-dimensional material which is of enormous interest for applications, mainly in electronics and optoelectronics. Herein, we for the first time employ phosphorene for directing the self-assembly of asymmetric polystyrene-block-polymethylmethacrylate (PS-b-PMMA) block copolymer (BCP) thin film to form the perpendicular orientation of sub-10 nm PS nanopore arrays in a hexagonal fashion normal to the interface. We experimentally demonstrate that none of the PS and PMMA blocks exhibit preferential affinity to the phosphorene-modified surface. Furthermore, the perpendicularly-oriented PS nanostructures almost stay unchanged with the variation of number of layers of few-layer phosphorene nanoflakes between 15-30 layers. Differing from the neutral polymer brushes which are widely used for chemical modification of the silicon substrate, phosphorene provides a novel physical way to control the interfacial interactions between the asymmetric PS-b-PMMA BCP thin film and the silicon substrate. Based on our results, it is possible to build a new scheme for producing sub-10 nm PS nanopore arrays oriented perpendicularly to the few-layer phosphorene nanoflakes. Furthermore, the nanostructural microdomains could serve as a promising nanolithography template for surface patterning of phosphorene nanoflakes.

Elucidating the charge carrier separation and working mechanism of CH3NH3PbI(3-x)Cl(x) perovskite solar cells.

PubMed

Edri, Eran; Kirmayer, Saar; Mukhopadhyay, Sabyasachi; Gartsman, Konstantin; Hodes, Gary; Cahen, David

2014-03-11

Developments in organic-inorganic lead halide-based perovskite solar cells have been meteoric over the last 2 years, with small-area efficiencies surpassing 15%. We address the fundamental issue of how these cells work by applying a scanning electron microscopy-based technique to cell cross-sections. By mapping the variation in efficiency of charge separation and collection in the cross-sections, we show the presence of two prime high efficiency locations, one at/near the absorber/hole-blocking-layer, and the second at/near the absorber/electron-blocking-layer interfaces, with the former more pronounced. This 'twin-peaks' profile is characteristic of a p-i-n solar cell, with a layer of low-doped, high electronic quality semiconductor, between a p- and an n-layer. If the electron blocker is replaced by a gold contact, only a heterojunction at the absorber/hole-blocking interface remains.

Dilute group III-V nitride intermediate band solar cells with contact blocking layers

DOEpatents

Walukiewicz, Wladyslaw; Yu, Kin Man

2015-02-24

An intermediate band solar cell (IBSC) is provided including a p-n junction based on dilute III-V nitride materials and a pair of contact blocking layers positioned on opposite surfaces of the p-n junction for electrically isolating the intermediate band of the p-n junction by blocking the charge transport in the intermediate band without affecting the electron and hole collection efficiency of the p-n junction, thereby increasing open circuit voltage (V.sub.OC) of the IBSC and increasing the photocurrent by utilizing the intermediate band to absorb photons with energy below the band gap of the absorber layers of the IBSC. Hence, the overall power conversion efficiency of a IBSC will be much higher than an conventional single junction solar cell. The p-n junction absorber layers of the IBSC may further have compositionally graded nitrogen concentrations to provide an electric field for more efficient charge collection.

Dilute Group III-V nitride intermediate band solar cells with contact blocking layers

DOEpatents

Walukiewicz, Wladyslaw [Kensington, CA; Yu, Kin Man [Lafayette, CA

2012-07-31

An intermediate band solar cell (IBSC) is provided including a p-n junction based on dilute III-V nitride materials and a pair of contact blocking layers positioned on opposite surfaces of the p-n junction for electrically isolating the intermediate band of the p-n junction by blocking the charge transport in the intermediate band without affecting the electron and hole collection efficiency of the p-n junction, thereby increasing open circuit voltage (V.sub.OC) of the IBSC and increasing the photocurrent by utilizing the intermediate band to absorb photons with energy below the band gap of the absorber layers of the IBSC. Hence, the overall power conversion efficiency of a IBSC will be much higher than an conventional single junction solar cell. The p-n junction absorber layers of the IBSC may further have compositionally graded nitrogen concentrations to provide an electric field for more efficient charge collection.

Method for restoring the resistance of indium oxide semiconductors after heating while in sealed structures

DOEpatents

Seager, C.H.; Evans, J.T. Jr.

1998-11-24

A method is described for counteracting increases in resistivity encountered when Indium Oxide resistive layers are subjected to high temperature annealing steps during semiconductor device fabrication. The method utilizes a recovery annealing step which returns the Indium Oxide layer to its original resistivity after a high temperature annealing step has caused the resistivity to increase. The recovery anneal comprises heating the resistive layer to a temperature between 100 C and 300 C for a period of time that depends on the annealing temperature. The recovery is observed even when the Indium Oxide layer is sealed under a dielectric layer. 1 fig.

Method for restoring the resistance of indium oxide semiconductors after heating while in sealed structures

DOEpatents

Seager, Carleton H.; Evans, Jr., Joseph Tate

1998-01-01

A method for counteracting increases in resistivity encountered when Indium Oxide resistive layers are subjected to high temperature annealing steps during semiconductor device fabrication. The method utilizes a recovery annealing step which returns the Indium Oxide layer to its original resistivity after a high temperature annealing step has caused the resistivity to increase. The recovery anneal comprises heating the resistive layer to a temperature between 100.degree. C. and 300.degree. C. for a period of time that depends on the annealing temperature. The recovery is observed even when the Indium Oxide layer is sealed under a dielectric layer.

Considerably improved photovoltaic performance of carbon nanotube-based solar cells using metal oxide layers.

PubMed

Wang, Feijiu; Kozawa, Daichi; Miyauchi, Yuhei; Hiraoka, Kazushi; Mouri, Shinichiro; Ohno, Yutaka; Matsuda, Kazunari

2015-02-18

Carbon nanotube-based solar cells have been extensively studied from the perspective of potential application. Here we demonstrated a significant improvement of the carbon nanotube solar cells by the use of metal oxide layers for efficient carrier transport. The metal oxides also serve as an antireflection layer and an efficient carrier dopant, leading to a reduction in the loss of the incident solar light and an increase in the photocurrent, respectively. As a consequence, the photovoltaic performance of both p-single-walled carbon nanotube (SWNT)/n-Si and n-SWNT/p-Si heterojunction solar cells using MoOx and ZnO layers is improved, resulting in very high photovoltaic conversion efficiencies of 17.0 and 4.0%, respectively. These findings regarding the use of metal oxides as multifunctional layers suggest that metal oxide layers could improve the performance of various electronic devices based on carbon nanotubes.

Considerably improved photovoltaic performance of carbon nanotube-based solar cells using metal oxide layers

NASA Astrophysics Data System (ADS)

Wang, Feijiu; Kozawa, Daichi; Miyauchi, Yuhei; Hiraoka, Kazushi; Mouri, Shinichiro; Ohno, Yutaka; Matsuda, Kazunari

2015-02-01

Carbon nanotube-based solar cells have been extensively studied from the perspective of potential application. Here we demonstrated a significant improvement of the carbon nanotube solar cells by the use of metal oxide layers for efficient carrier transport. The metal oxides also serve as an antireflection layer and an efficient carrier dopant, leading to a reduction in the loss of the incident solar light and an increase in the photocurrent, respectively. As a consequence, the photovoltaic performance of both p-single-walled carbon nanotube (SWNT)/n-Si and n-SWNT/p-Si heterojunction solar cells using MoOx and ZnO layers is improved, resulting in very high photovoltaic conversion efficiencies of 17.0 and 4.0%, respectively. These findings regarding the use of metal oxides as multifunctional layers suggest that metal oxide layers could improve the performance of various electronic devices based on carbon nanotubes.

Fabrication and study of properties of magnetite nanoparticles in hybrid micelles of polystyrene-block-polyethylene oxide and sodium dodecyl sulfate

DOE Office of Scientific and Technical Information (OSTI.GOV)

Loginova, T. P., E-mail: tlg@ineos.ac.ru; Timofeeva, G. I.; Lependina, O. L.

2016-01-15

Magnetite nanoparticles have been formed for the first time in hybrid micelles of polystyrene-block-polyethylene oxide and sodium dodecyl sulfate in water by ultrasonic treatment at room temperature. An analysis by small-angle X-ray scattering and transmission electron microscopy (TEM) showed that magnetite nanoparticles in hybrid micelles of block copolymer and sodium dodecyl sulfate are polydesperse (have sizes from 0.5 to 20 nm). The specific magnetization of solid samples has been measured.

Effect of nano oxide layer on exchange bias and GMR in Mn-Ir-Pt based spin valve

NASA Astrophysics Data System (ADS)

Jeon, D. M.; Lee, J. P.; Lee, D. H.; Yoon, S. Y.; Kim, Y. S.; Suh, S. J.

2004-05-01

We have investigated the effect of nano oxide layers (NOLs), which were fabricated by a plasma oxidation of CoFe layer on the magnetic properties and magneto-resistance (MR) in a Mn-Ir-Pt based spin valve. The adjusted NOL could result in the high MR and the strong exchange coupling field ( Hex). From a high resolution electron microscopy analysis the oxide was about 1 nm. The strong reflectivity at the interface of a free and oxide capping layer should lead to the decrease of an interlayer coupling field, which could possibly improve the Hex.

Superconducting structure

DOEpatents

Kwon, Chuhee; Jia, Quanxi; Foltyn, Stephen R.

2003-04-01

A superconductive structure including a dielectric oxide substrate, a thin buffer layer of a superconducting material thereon; and, a layer of a rare earth-barium-copper oxide superconducting film thereon the thin layer of yttrium-barium-copper oxide, the rare earth selected from the group consisting of samarium, gadolinium, ytterbium, erbium, neodymium, dysprosium, holmium, lutetium, a combination of more than one element from the rare earth group and a combination of one or more elements from the rare earth group with yttrium, the buffer layer of superconducting material characterized as having chemical and structural compatibility with the dielectric oxide substrate and the rare earth-barium-copper oxide superconducting film is provided.

Superconducting Structure

DOEpatents

Kwon, Chuhee; Jia, Quanxi; Foltyn, Stephen R.

2005-09-13

A superconductive structure including a dielectric oxide substrate, a thin buffer layer of a superconducting material thereon; and, a layer of a rare earth-barium-copper oxide superconducting film thereon the thin layer of yttrium-barium-copper oxide, the rare earth selected from the group consisting of samarium, gadolinium, ytterbium, erbium, neodymium, dysprosium, holmium, lutetium, a combination of more than one element from the rare earth group and a combination of one or more elements from the rare earth group with yttrium, the buffer layer of superconducting material characterized as having chemical and structural compatibility with the dielectric oxide substrate and the rare earth-barium-copper oxide superconducting film is provided.

Steam assisted oxide growth on aluminium alloys using oxidative chemistries: Part I Microstructural investigation

NASA Astrophysics Data System (ADS)

Din, Rameez Ud; Piotrowska, Kamila; Gudla, Visweswara Chakravarthy; Jellesen, Morten Stendahl; Ambat, Rajan

2015-11-01

The surface treatment of aluminium alloys under steam containing KMnO4 and HNO3 resulted in the formation of an oxide layer having a thickness of up to 825 nm. The use of KMnO4 and HNO3 in the steam resulted in incorporation of the respective chemical species into the oxide layer. Steam treatment with solution containing HNO3 caused dissolution of Cu and Si from the intermetallic particles in the aluminium substrate. The growth rate of oxide layer was observed to be a function of MnO4- and NO3- ions present in the aqueous solution. The NO3- ions exhibit higher affinity towards the intermetallic particles resulting in poor coverage by the steam generated oxide layer compared to the coating formed using MnO4- ions. Further, increase in the concentration of NO3- ions in the solution retards precipitation of the steam generated aluminium hydroxide layer.

Thermal Performance of Aircraft Polyurethane Seat Cushions

NASA Technical Reports Server (NTRS)

Kourtides, D. A.; Parker, J. A.

1982-01-01

Aircraft seat materials were evaluated in terms of their thermal performance. The materials were evaluated using (a) thermogravimetric analysis, (b) differential scanning calorimetry, (c) a modified NBS smoke chamber to determine the rate of mass loss and (d) the NASA T-3 apparatus to determine the thermal efficiency. In this paper, the modified NBS smoke chamber will be described in detail since it provided the most conclusive results. The NBS smoke chamber was modified to measure the weight loss of material when exposed to a radiant heat source over the range of 2.5 to 7.5 W/sq cm. This chamber has been utilized to evaluate the thermal performance of various heat blocking layers utilized to protect the polyurethane cushioning foam used in aircraft seats. Various kinds of heat blocking layers were evaluated by monitoring the weight loss of miniature seat cushions when exposed to the radiant heat. The effectiveness of aluminized heat blocking systems was demonstrated when compared to conventional heat blocking layers such as neoprene. All heat blocking systems showed good fire protection capabilities when compared to the state-of-the-art, i.e., wool-nylon over polyurethane foam.

Formation of a Ge-rich Si1-x Ge x (x > 0.9) fin epitaxial layer condensed by dry oxidation

NASA Astrophysics Data System (ADS)

Jang, Hyunchul; Kim, Byongju; Koo, Sangmo; Ko, Dae-Hong

2017-11-01

We have selectively grown an epitaxial Si0.35Ge0.65 fin layer in a 65 nm oxide trench pattern array and formed a Ge-rich Si1-x Ge x (x > 0.9) fin layer with condensed Ge using dry oxidation. During oxidation of the SiGe fin structure, we found that the compressive strain of the condensed SiGe layer was increased by about 1.3% while Ge was efficiently condensed due to a two-dimensional oxidation reaction. In this paper, we discussed in detail the diffusion during the two-dimensional condensation reaction as well as the asymmetric biaxial strain of the SiGe fin before and after oxidation using a reciprocal space mapping measurement. The application of dry oxidation on selectively grown SiGe fin layer can be an effective method for increasing hole mobility of SiGe fin with increased Ge content and self-induced compressive strain.

Wet oxidation of GeSi strained layers by rapid thermal processing

NASA Astrophysics Data System (ADS)

Nayak, D. K.; Kamjoo, K.; Park, J. S.; Woo, J. C. S.; Wang, K. L.

1990-07-01

A cold-wall rapid thermal processor is used for the wet oxidation of the commensurately grown GexSi1-x layers on Si substrates. The rate of oxidation of the GexSi1-x layer is found to be significantly higher than that of pure Si, and the oxidation rate increases with the increase in the Ge content in GexSi1-x layer. The oxidation rate of GexSi1-x appears to decrease with increasing oxidation time for the time-temperature cycles considered here. Employing high-frequency and quasi-static capacitance-voltage measurements, it is found that a fixed negative oxide charge density in the range of 1011- 1012/cm2 and the interface trap level density (in the mid-gap region) of about 1012/cm2 eV are present. Further, the density of this fixed interface charge at the SiO2/GeSi interface is found to increase with the Ge concentration in the commensurately grown GeSi layers.

Effects of channel thickness on oxide thin film transistor with double-stacked channel layer

NASA Astrophysics Data System (ADS)

Lee, Kimoon; Kim, Yong-Hoon; Yoon, Sung-Min; Kim, Jiwan; Oh, Min Suk

2017-11-01

To improve the field effect mobility and control the threshold voltage ( V th ) of oxide thin film transistors (TFTs), we fabricated the oxide TFTs with double-stacked channel layers which consist of thick Zn-Sn-O (ZTO) and very thin In-Zn-O (IZO) layers. We investigated the effects of the thickness of thin conductive layer and the conductivity of thick layer on oxide TFTs with doublestacked channel layer. When we changed the thickness of thin conductive IZO channel layer, the resistivity values were changed. This resistivity of thin channel layer affected on the saturation field effect mobility and the off current of TFTs. In case of the thick ZTO channel layer which was deposited by sputtering in Ar: O2 = 10: 1, the device showed better performances than that which was deposited in Ar: O2 = 1: 1. Our TFTs showed high mobility ( μ FE ) of 40.7 cm2/Vs and V th of 4.3 V. We assumed that high mobility and the controlled V th were caused by thin conductive IZO layer and thick stable ZTO layer. Therefore, this double-stacked channel structure can be very promising way to improve the electrical characteristics of various oxide thin film transistors.

Preparation of TiO(2) layers on cp-Ti and Ti6Al4V by thermal and anodic oxidation and by sol-gel coating techniques and their characterization.

PubMed

Velten, D; Biehl, V; Aubertin, F; Valeske, B; Possart, W; Breme, J

2002-01-01

The excellent biocompatibility of titanium and its alloys used, for example, for medical devices, is associated with the properties of their surface oxide. For a better understanding of the tissue reaction in contact with the oxide layer, knowledge of the chemical and physical properties of this layer is of increasing interest. In this study, titania films were produced on cp-Ti and Ti6Al4V substrates by thermal oxidation, anodic oxidation, and by the sol-gel process. The thickness and structure of the films produced under different conditions were determined by ellipsometry, infrared spectroscopy, and X-ray diffraction measurements. The corrosion properties of these layers were investigated by current density-potential curves under physiological conditions. The oxide layers produced on cp-Ti and Ti6Al4V by thermal oxidation consist of TiO(2) in the rutile structure. For the anodized samples the structure of TiO(2) is a mixture of amorphous phase and anatase. The structure of the coatings produced by the sol-gel process for a constant annealing time depends on the annealing temperature, and with increasing temperature successively amorphous, anatase, and rutile structure is observed. Compared to the uncoated, polished substrate with a natural oxide layer, the corrosion resistance of cp-Ti and Ti6Al4V is increased for the samples with an oxide layer thickness of about 100 nm, independent of the oxidation procedure. Copyright 2001 John Wiley & Sons, Inc.

Role of the electron blocking layer in the graded-index separate confinement heterostructure nitride laser diodes

NASA Astrophysics Data System (ADS)

Bojarska, Agata; Goss, Jakub; Stanczyk, Szymon; Makarowa, Irina; Schiavon, Dario; Czernecki, Robert; Suski, Tadeusz; Perlin, Piotr

2018-04-01

In this work, we investigate the role of the electron blocking layer (EBL) in laser diodes based on a graded index separate confinement heterostructure. We compare two sets of devices with very different EBL aluminum composition (3% and 12%) and design (graded and superlattice). The results of electro-optical characterization of these laser diodes reveal surprisingly modest role of electron blocking layer composition in determination of the threshold current and the differential efficiency values. However, EBL structure influences the operating voltage, which is decreased for devices with lower EBL and superlattice EBL. We observe also the differences in the thermal stability of devices - characteristic temperature is lower for lasers with 3% Al in EBL.

Investigation of threading dislocation blocking in strained-layer InGaAs/GaAs heterostructures using scanning cathodoluminescence microscopy

NASA Astrophysics Data System (ADS)

Russell, J. J.; Zou, J.; Moon, A. R.; Cockayne, D. J. H.

2000-08-01

Threading dislocation glide relieves strain in strained-layer heterostructures by increasing the total length of interface misfit dislocations. The blocking theory proposed by Freund [J. Appl. Phys. 68, 2073 (1990)] predicts the thickness above which gliding threading dislocations are able to overcome the resistance force produced by existing orthogonal misfit dislocations. A set of wedge-shaped samples of InxGa1-xAs/GaAs (x=0.04) strained-layer heterostructures was grown using molecular-beam epitaxy in order to test the theory of dislocation blocking over a range of thicknesses within one sample. Scanning cathodoluminescence microscopy techniques were used to image the misfit dislocations. The cathodoluminescence results confirm the model proposed by Freund.

A Semiautomated Multilayer Picking Algorithm for Ice-sheet Radar Echograms Applied to Ground-Based Near-Surface Data

NASA Technical Reports Server (NTRS)

Onana, Vincent De Paul; Koenig, Lora Suzanne; Ruth, Julia; Studinger, Michael; Harbeck, Jeremy P.

2014-01-01

Snow accumulation over an ice sheet is the sole mass input, making it a primary measurement for understanding the past, present, and future mass balance. Near-surface frequency-modulated continuous-wave (FMCW) radars image isochronous firn layers recording accumulation histories. The Semiautomated Multilayer Picking Algorithm (SAMPA) was designed and developed to trace annual accumulation layers in polar firn from both airborne and ground-based radars. The SAMPA algorithm is based on the Radon transform (RT) computed by blocks and angular orientations over a radar echogram. For each echogram's block, the RT maps firn segmented-layer features into peaks, which are picked using amplitude and width threshold parameters of peaks. A backward RT is then computed for each corresponding block, mapping the peaks back into picked segmented-layers. The segmented layers are then connected and smoothed to achieve a final layer pick across the echogram. Once input parameters are trained, SAMPA operates autonomously and can process hundreds of kilometers of radar data picking more than 40 layers. SAMPA final pick results and layer numbering still require a cursory manual adjustment to correct noncontinuous picks, which are likely not annual, and to correct for inconsistency in layer numbering. Despite the manual effort to train and check SAMPA results, it is an efficient tool for picking multiple accumulation layers in polar firn, reducing time over manual digitizing efforts. The trackability of good detected layers is greater than 90%.

Effect of interfacial oxide layers on the current-voltage characteristics of Al-Si contacts

NASA Technical Reports Server (NTRS)

Porter, W. A.; Parker, D. L.

1976-01-01

Aluminum-silicon contacts with very thin interfacial oxide layers and various surface impurity concentrations are studied for both n and p-type silicon. To determine the surface impurity concentrations on p(+)-p and n(+)-n structures, a modified C-V technique was utilized. Effects of interfacial oxide layers and surface impurity concentrations on current-voltage characteristics are discussed based on the energy band diagrams from the conductance-voltage plots. The interfacial oxide and aluminum layer causes image contrasts on X-ray topographs.

Screening method for selecting semiconductor substrates having defects below a predetermined level in an oxide layer

DOEpatents

Warren, W.L.; Vanheusden, K.J.R.; Schwank, J.R.; Fleetwood, D.M.; Shaneyfelt, M.R.; Winokur, P.S.; Devine, R.A.B.

1998-07-28

A method is disclosed for screening or qualifying semiconductor substrates for integrated circuit fabrication. The method comprises the steps of annealing at least one semiconductor substrate at a first temperature in a defect-activating ambient (e.g. hydrogen, forming gas, or ammonia) for sufficient time for activating any defects within on oxide layer of the substrate; measuring a defect-revealing electrical characteristic of at least a portion of the oxide layer for determining a quantity of activated defects therein; and selecting substrates for which the quantity of activated defects is below a predetermined level. The defect-revealing electrical characteristic may be a capacitance-versus voltage (C-V) characteristic or a current-versus-voltage (I-V) characteristic that is dependent on an electrical charge in the oxide layer generated by the activated defects. Embodiments of the present invention may be applied for screening any type of semiconductor substrate or wafer having an oxide layer formed thereon or therein. This includes silicon-on-insulator substrates formed by a separation by the implantation of oxygen (SIMOX) process or the bond and etch back silicon-on-insulator (BESOI) process, as well as silicon substrates having a thermal oxide layer or a deposited oxide layer. 5 figs.

Ceramic Composite Thin Films

NASA Technical Reports Server (NTRS)

Dikin, Dmitriy A. (Inventor); Nguyen, SonBinh T. (Inventor); Ruoff, Rodney S. (Inventor); Stankovich, Sasha (Inventor)

2013-01-01

A ceramic composite thin film or layer includes individual graphene oxide and/or electrically conductive graphene sheets dispersed in a ceramic (e.g. silica) matrix. The thin film or layer can be electrically conductive film or layer depending the amount of graphene sheets present. The composite films or layers are transparent, chemically inert and compatible with both glass and hydrophilic SiOx/silicon substrates. The composite film or layer can be produced by making a suspension of graphene oxide sheet fragments, introducing a silica-precursor or silica to the suspension to form a sol, depositing the sol on a substrate as thin film or layer, at least partially reducing the graphene oxide sheets to conductive graphene sheets, and thermally consolidating the thin film or layer to form a silica matrix in which the graphene oxide and/or graphene sheets are dispersed.

Strong White Photoluminescence from Carbon-Incorporated Silicon Oxide Fabricated by Preferential Oxidation of Silicon in Nano-Structured Si:C Layer

NASA Astrophysics Data System (ADS)

Vasin, Andriy V.; Ishikawa, Yukari; Shibata, Noriyoshi; Salonen, Jarno; Lehto, Vesa-Pekka

2007-05-01

A new approach to development of light-emitting SiO2:C layers on Si wafer is demonstrated. Carbon-incorporated silicon oxide was fabricated by three-step procedure: (1) formation of the porous silicon (por-Si) layer by ordinary anodization in HF:ethanol solution; (2) carbonization at 1000 °C in acetylene flow (formation of por-Si:C layer); (3) oxidation in the flow of moisturized argon at 800 °C (formation of SiO2:C layer). Resulting SiO2:C layer exhibited very strong and stable white photoluminescence at room temperature. It is shown that high reactivity of water vapor with nano-crystalline silicon and inertness with amorphous carbon play a key role in the formation of light-emitting SiO2:C layer.

Towards precise defect control in layered oxide structures by using oxide molecular beam epitaxy

PubMed Central

Baiutti, Federico; Christiani, Georg

2014-01-01

Summary In this paper we present the atomic-layer-by-layer oxide molecular beam epitaxy (ALL-oxide MBE) which has been recently installed in the Max-Planck Institute for Solid State Research and we report on its present status, providing some examples that demonstrate its successful application in the synthesis of different layered oxides, with particular reference to superconducting La2CuO4 and insulator-to-metal La2− xSrxNiO4. We briefly review the ALL-oxide MBE technique and its unique capabilities in the deposition of atomically smooth single-crystal thin films of various complex oxides, artificial compounds and heterostructures, introducing our goal of pursuing a deep investigation of such systems with particular emphasis on structural defects, with the aim of tailoring their functional properties by precise defects control. PMID:24995148

Insight into self-discharge of layered lithium-rich oxide cathode in carbonate-based electrolytes with and without additive

NASA Astrophysics Data System (ADS)

Li, Jianhui; Xing, Lidan; Zhang, Liping; Yu, Le; Fan, Weizhen; Xu, Mengqing; Li, Weishan

2016-08-01

Self-discharge behavior of layered lithium-rich oxide as cathode of lithium ion battery in a carbonated-based electrolyte is understood, and a simple boron-containing compound, trimethyl borate (TMB), is used as an electrolyte additive to suppress this self-discharge. It is found that layered lithium-rich oxide charged under 4.8 V in additive-free electrolyte suffers severe self-discharge and TMB is an effective electrolyte additive for self-discharge suppression. Physical characterizations from XRD, SEM, TEM, XPS and ICP-MS demonstrate that the crystal structure of the layered lithium-rich oxide collapses due to the chemical interaction between the charged oxide and electrolyte. When TMB is applied, the structural integrity of the oxide is maintained due to the protective cathode film generated from the preferential oxidation of TMB.

Synthesis of Diblock copolymer poly-3-hydroxybutyrate -block-poly-3-hydroxyhexanoate [PHB-b-PHHx] by a β-oxidation weakened Pseudomonas putida KT2442.

PubMed

Tripathi, Lakshmi; Wu, Lin-Ping; Chen, Jinchun; Chen, Guo-Qiang

2012-04-05

Block polyhydroxyalkanoates (PHA) were reported to be resistant against polymer aging that negatively affects polymer properties. Recently, more and more attempts have been directed to make PHA block copolymers. Diblock copolymers PHB-b-PHHx consisting of poly-3-hydroxybutyrate (PHB) block covalently bonded with poly-3-hydroxyhexanoate (PHHx) block were for the first time produced successfully by a recombinant Pseudomonas putida KT2442 with its β-oxidation cycle deleted to its maximum. The chloroform extracted polymers were characterized by nuclear magnetic resonance (NMR), thermo- and mechanical analysis. NMR confirmed the existence of diblock copolymers consisting of 58 mol% PHB as the short chain length block with 42 mol% PHHx as the medium chain length block. The block copolymers had two glass transition temperatures (Tg) at 2.7°C and -16.4°C, one melting temperature (Tm) at 172.1°C and one cool crystallization temperature (Tc) at 69.1°C as revealed by differential scanning calorimetry (DSC), respectively. This is the first microbial short-chain-length (scl) and medium-chain-length (mcl) PHA block copolymer reported. It is possible to produce PHA block copolymers of various kinds using the recombinant Pseudomonas putida KT2442 with its β-oxidation cycle deleted to its maximum. In comparison to a random copolymer poly-3-hydroxybutyrate-co-3-hydroxyhexanoate (P(HB-co-HHx)) and a blend sample of PHB and PHHx, the PHB-b-PHHx showed improved structural related mechanical properties.

Environmentally-assisted technique for transferring devices onto non-conventional substrates

DOEpatents

Lee, Chi-Hwan; Kim, Dong Rip; Zheng, Xiaolin

2016-05-10

A device fabrication method includes: (1) providing a growth substrate including an oxide layer; (2) forming a metal layer over the oxide layer; (3) forming a stack of device layers over the metal layer; (4) performing fluid-assisted interfacial debonding of the metal layer to separate the stack of device layers and the metal layer from the growth substrate; and (5) affixing the stack of device layers to a target substrate.

Low voltage solid-state lateral coloration electrochromic device

DOEpatents

Tracy, C. Edwin; Benson, David K.; Ruth, Marta R.

1987-01-01

A solid-state transition metal oxide device comprising a plurality of lay having a predisposed orientation including an electrochromic oxide layer. Conductive material including anode and cathode contacts is secured to the device. Coloration is actuated within the electrochromic oxide layer after the application of a predetermined potential between the contacts. The coloration action is adapted to sweep or dynamically extend across the length of the electrochromic oxide layer.

Partially Oxidized SnS2 Atomic Layers Achieving Efficient Visible-Light-Driven CO2 Reduction.

PubMed

Jiao, Xingchen; Li, Xiaodong; Jin, Xiuyu; Sun, Yongfu; Xu, Jiaqi; Liang, Liang; Ju, Huanxin; Zhu, Junfa; Pan, Yang; Yan, Wensheng; Lin, Yue; Xie, Yi

2017-12-13

Unraveling the role of surface oxide on affecting its native metal disulfide's CO 2 photoreduction remains a grand challenge. Herein, we initially construct metal disulfide atomic layers and hence deliberately create oxidized domains on their surfaces. As an example, SnS 2 atomic layers with different oxidation degrees are successfully synthesized. In situ Fourier transform infrared spectroscopy spectra disclose the COOH* radical is the main intermediate, whereas density-functional-theory calculations reveal the COOH* formation is the rate-limiting step. The locally oxidized domains could serve as the highly catalytically active sites, which not only benefit for charge-carrier separation kinetics, verified by surface photovoltage spectra, but also result in electron localization on Sn atoms near the O atoms, thus lowering the activation energy barrier through stabilizing the COOH* intermediates. As a result, the mildly oxidized SnS 2 atomic layers exhibit the carbon monoxide formation rate of 12.28 μmol g -1 h -1 , roughly 2.3 and 2.6 times higher than those of the poorly oxidized SnS 2 atomic layers and the SnS 2 atomic layers under visible-light illumination. This work uncovers atomic-level insights into the correlation between oxidized sulfides and CO 2 reduction property, paving a new way for obtaining high-efficiency CO 2 photoreduction performances.

Corrosion characteristics of Ni-base superalloys in high temperature steam with and without hydrogen

NASA Astrophysics Data System (ADS)

Kim, Donghoon; Kim, Daejong; Lee, Ho Jung; Jang, Changheui; Yoon, Duk Joo

2013-10-01

The hot steam corrosion behavior of Alloy 617 and Haynes 230 were evaluated in corrosion tests performed at 900 °C in steam and steam + 20 vol.% H2 environments. Corrosion rates of Alloy 617 was faster than that of Haynes 230 at 900 °C in steam and steam + 20 vol.% H2 environments. When hydrogen was added to steam, the corrosion rate was accelerated because added hydrogen increased the concentration of Cr interstitial defects in the oxide layer. Isolated nodular MnTiO3 oxides were formed on the MnCr2O4/Cr2O3 oxide layer and sub-layer Cr2O3 was formed in steam and steam + 20 vol.% H2 for Alloy 617. On the other hand, a MnCr2O4 layer was formed on top of the Cr2O3 oxide layer for Haynes 230. The extensive sub-layer Cr2O3 formation resulted from the oxygen or hydroxide inward diffusion in such environments. When hydrogen was added, the initial surface oxide morphology was changed from a convex shape to platelets because of the accelerated diffusion of cations under the oxide layer.

In-Situ Observation of Nano-Oxide Formation in Magnetic Thin Films

NASA Astrophysics Data System (ADS)

McCallum, Andrew; Russek, Stephen

2004-03-01

Exposure of a metal surface in a spin valve structure to oxygen creates a nano-oxide layer, or NOL, on that surface. Inclusion of NOLs into spin valve structures has been shown by many researchers to lower the resistance and increase the giant magnetoresistance effect. Four point in-situ conductance measurements were made during the deposition and oxidation of Co layers. These measurements show an initial decrease in conductance followed by an increase in conductance, due to a specularity increase of at least 0.10. RHEED measurements taken simultaneously with conductance measurements show the formation an amorphous oxide while the specularity increases. With further exposure of oxygen to the surface a CoO structure with a (111) texture forms. Magnetoconductance measurements during the oxidation of the free layer of bottom pinned spin valves show increases in the GMR of the spin valves. Estimates of the change in specularity and Co layer thickness were determined from the change in conductance and the change in magnetoconductance. Also determined from the magnetoconductance measurements was an increase in the coercivity of the free layer with oxidation. Adding Co onto the oxide had a strong effect on the coercivity and coupling between free and pinned layers.

On the origin of the electron blocking effect by an n-type AlGaN electron blocking layer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Zi-Hui; Ji, Yun; Liu, Wei

2014-02-17

In this work, the origin of electron blocking effect of n-type Al{sub 0.25}Ga{sub 0.75}N electron blocking layer (EBL) for c+ InGaN/GaN light-emitting diodes has been investigated through dual-wavelength emission method. It is found that the strong polarization induced electric field within the n-EBL reduces the thermal velocity and correspondingly the mean free path of the hot electrons. As a result, the electron capture efficiency of the multiple quantum wells is enhanced, which significantly reduces the electron overflow from the active region and increases the radiative recombination rate with holes.

Efficient CH3NH3PbI3 perovskite/fullerene planar heterojunction hybrid solar cells with oxidized Ni/Au/Cu transparent electrode

NASA Astrophysics Data System (ADS)

Lai, Wei-Chih; Lin, Kun-Wei; Guo, Tzung-Fang; Chen, Peter; Liao, Yuan-Yu

2018-02-01

We demonstrated the performance of inverted CH3NH3PbI3 perovskite-based solar cells (SCs) with a thermally oxidized nickel/gold/copper (Ni/Au/Cu) trilayer transparent electrode. Oxidized Ni/Au/Cu is a high transparent layer and has less resistance than the oxidized Ni/Au layer. Like the oxidized Ni/Au layer, oxidized Ni and Cu in oxidized Ni/Au/Cu could perform as a hole transport layer of the perovskite-based SCs. It leads to improved perovskite SC performance on an open circuit voltage of 1.01 V, a short circuit current density of 14.36 mA/cm2, a fill factor of 76.7%, and a power conversion efficiency (η%) of 11.1%. The η% of perovskite SCs with oxidized Ni (10 nm)/Au (6 nm)/Cu (1 nm) improved by approximately 10% compared with that of perovskite SCs with oxidized Ni/Au.

Structural characterization of nano-oxide layers in PtMn based specular spin valves

NASA Astrophysics Data System (ADS)

Zhou, Min; Chen, Lifan; Diao, Zhitao; Park, Chang-Man; Huai, Yiming

2005-05-01

A systematic structure characterization of nano-oxide layers (NOLs) and specular spin valves using x-ray diffraction and high-resolution transmission electron microscopy (HRTEM) has been studied. High-angle x-ray diffraction data show almost identical fcc textures for both natural and plasma NOL spin-valves. Low-angle x-ray reflectivity spectrum shows more deteriorated Kiessig fringes at high incident angles for natural oxide sample, indicating rougher interfaces in natural oxidation than in plasma oxidation. Oxygen exposure plays an important role in NOLs process. Fabricating NOLs without any crystal structure degradation is critical to obtain high MR ratio. HRTEM reveals that oxide clusters mixing with insufficiently oxidized CoFe layers prevailed in natural NOL, and the natural oxidation was inhomogeneous. In contrast, plasma NOL has a thinner, more homogeneously oxidized CoFe layers with sharp interfaces. In plasma NOLs, the structures still maintain CoFe crystal structure. The structures and magnetic correlation of the NOL specular spin valves are discussed.

Block copolymer modified surfaces for conjugation of biomacromolecules with control of quantity and activity.

PubMed

Li, Xin; Wang, Mengmeng; Wang, Lei; Shi, Xiujuan; Xu, Yajun; Song, Bo; Chen, Hong

2013-01-29

Polymer brush layers based on block copolymers of poly(oligo(ethylene glycol) methacrylate) (POEGMA) and poly(glycidyl methacrylate) (PGMA) were formed on silicon wafers by activators generated by electron transfer atom transfer radical polymerization (AGET ATRP). Different types of biomolecule can be conjugated to these brush layers by reaction of PGMA epoxide groups with amino groups in the biomolecule, while POEGMA, which resists nonspecific protein adsorption, provides an antifouling environment. Surfaces were characterized by water contact angle, ellipsometry, and Fourier transform infrared spectroscopy (FTIR) to confirm the modification reactions. Phase segregation of the copolymer blocks in the layers was observed by AFM. The effect of surface properties on protein conjugation was investigated using radiolabeling methods. It was shown that surfaces with POEGMA layers were protein resistant, while the quantity of protein conjugated to the diblock copolymer modified surfaces increased with increasing PGMA layer thickness. The activity of lysozyme conjugated on the surface could also be controlled by varying the thickness of the copolymer layer. When biotin was conjugated to the block copolymer grafts, the surface remained resistant to nonspecific protein adsorption but showed specific binding of avidin. These properties, that is, well-controlled quantity and activity of conjugated biomolecules and specificity of interaction with target biomolecules may be exploited for the improvement of signal-to-noise ratio in sensor applications. More generally, such surfaces may be useful as biological recognition elements of high specificity for functional biomaterials.

Multilayer Article Characterized by Low Coefficient of Thermal Expansion Outer Layer

NASA Technical Reports Server (NTRS)

Lee, Kang N. (Inventor)

2004-01-01

A multilayer article comprises a substrate comprising a ceramic or a silicon-containing metal alloy. The ceramic is a Si-containing ceramic or an oxide ceramic with or without silicon. An outer layer overlies the substrate and at least one intermediate layer is located between the outer layer and thc substrate. An optional bond layer is disposed between thc 1 least one intermediate layer and thc substrate. The at least one intermediate layer may comprise an optional chemical barrier layer adjacent the outer layer, a mullite-containing layer and an optional chemical barrier layer adjacent to the bond layer or substrate. The outer layer comprises a compound having a low coefficient of thermal expansion selected from one of the following systems: rare earth (RE) silicates; at least one of hafnia and hafnia-containing composite oxides; zirconia-containing composite oxides and combinations thereof.

Structural characterization of terrestrial microbial Mn oxides from Pinal Creek, AZ

USGS Publications Warehouse

Bargar, J.R.; Fuller, C.C.; Marcus, M.A.; Brearley, A.J.; Perez De la Rosa, M.; Webb, S.M.; Caldwell, W.A.

2009-01-01

The microbial catalysis of Mn(II) oxidation is believed to be a dominant source of abundant sorption- and redox-active Mn oxides in marine, freshwater, and subsurface aquatic environments. In spite of their importance, environmental oxides of known biogenic origin have generally not been characterized in detail from a structural perspective. Hyporheic zone Mn oxide grain coatings at Pinal Creek, Arizona, a metals-contaminated stream, have been identified as being dominantly microbial in origin and are well studied from bulk chemistry and contaminant hydrology perspectives. This site thus presents an excellent opportunity to study the structures of terrestrial microbial Mn oxides in detail. XRD and EXAFS measurements performed in this study indicate that the hydrated Pinal Creek Mn oxide grain coatings are layer-type Mn oxides with dominantly hexagonal or pseudo-hexagonal layer symmetry. XRD and TEM measurements suggest the oxides to be nanoparticulate plates with average dimensions on the order of 11 nm thick ?? 35 nm diameter, but with individual particles exhibiting thickness as small as a single layer and sheets as wide as 500 nm. The hydrated oxides exhibit a 10-?? basal-plane spacing and turbostratic disorder. EXAFS analyses suggest the oxides contain layer Mn(IV) site vacancy defects, and layer Mn(III) is inferred to be present, as deduced from Jahn-Teller distortion of the local structure. The physical geometry and structural details of the coatings suggest formation within microbial biofilms. The biogenic Mn oxides are stable with respect to transformation into thermodynamically more stable phases over a time scale of at least 5 months. The nanoparticulate layered structural motif, also observed in pure culture laboratory studies, appears to be characteristic of biogenic Mn oxides and may explain the common occurrence of this mineral habit in soils and sediments. ?? 2008 Elsevier Ltd.

Method for solidification of radioactive and other hazardous waste

DOEpatents

Anshits, Alexander G.; Vereshchagina, Tatiana A.; Voskresenskaya, Elena N.; Kostin, Eduard M.; Pavlov, Vyacheslav F.; Revenko, Yurii A.; Tretyakov, Alexander A.; Sharonova, Olga M.; Aloy, Albert S.; Sapozhnikova, Natalia V.; Knecht, Dieter A.; Tranter, Troy J.; Macheret, Yevgeny

2002-01-01

Solidification of liquid radioactive waste, and other hazardous wastes, is accomplished by the method of the invention by incorporating the waste into a porous glass crystalline molded block. The porous block is first loaded with the liquid waste and then dehydrated and exposed to thermal treatment at 50-1,000.degree. C. The porous glass crystalline molded block consists of glass crystalline hollow microspheres separated from fly ash (cenospheres), resulting from incineration of fossil plant coals. In a preferred embodiment, the porous glass crystalline blocks are formed from perforated cenospheres of grain size -400+50, wherein the selected cenospheres are consolidated into the porous molded block with a binder, such as liquid silicate glass. The porous blocks are then subjected to repeated cycles of saturating with liquid waste, and drying, and after the last cycle the blocks are subjected to calcination to transform the dried salts to more stable oxides. Radioactive liquid waste can be further stabilized in the porous blocks by coating the internal surface of the block with metal oxides prior to adding the liquid waste, and by coating the outside of the block with a low-melting glass or a ceramic after the waste is loaded into the block.

Significantly improved photovoltaic performance in polymer bulk heterojunction solar cells with graphene oxide /PEDOT:PSS double decked hole transport layer

PubMed Central

Rafique, Saqib; Abdullah, Shahino Mah; Shahid, Muhammad Mehmood; Ansari, Mohammad Omaish; Sulaiman, Khaulah

2017-01-01

This work demonstrates the high performance graphene oxide (GO)/PEDOT:PSS doubled decked hole transport layer (HTL) in the PCDTBT:PC71BM based bulk heterojunction organic photovoltaic device. The devices were tested on merits of their power conversion efficiency (PCE), reproducibility, stability and further compared with the devices with individual GO or PEDOT:PSS HTLs. Solar cells employing GO/PEDOT:PSS HTL yielded a PCE of 4.28% as compared to either of individual GO or PEDOT:PSS HTLs where they demonstrated PCEs of 2.77 and 3.57%, respectively. In case of single GO HTL, an inhomogeneous coating of ITO caused the poor performance whereas PEDOT:PSS is known to be hygroscopic and acidic which upon direct contact with ITO reduced the device performance. The improvement in the photovoltaic performance is mainly ascribed to the increased charge carriers mobility, short circuit current, open circuit voltage, fill factor, and decreased series resistance. The well matched work function of GO and PEDOT:PSS is likely to facilitate the charge transportation and an overall reduction in the series resistance. Moreover, GO could effectively block the electrons due to its large band-gap of ~3.6 eV, leading to an increased shunt resistance. In addition, we also observed the improvement in the reproducibility and stability. PMID:28084304

Self-healing atmospheric plasma sprayed Mn1.0Co1.9Fe0.1O4 protective interconnector coatings for solid oxide fuel cells

NASA Astrophysics Data System (ADS)

Grünwald, Nikolas; Sebold, Doris; Sohn, Yoo Jung; Menzler, Norbert Heribert; Vaßen, Robert

2017-09-01

Dense coatings on metallic interconnectors are necessary to suppress chromium poisoning of SOFC cathodes. Atmospherically plasma sprayed (APS) Mn1.0Co1.9Fe0.1O4 (MCF) protective layers demonstrated reduced chromium related degradation in laboratory and stack tests. Previous analyses revealed strong microstructural changes comparing the coating's as-sprayed and operated condition. This work concentrates on the layer-densification and crack-healing observed by annealing APS-MCF in air, which simulates the cathode operation conditions. The effect is described by a volume expansion induced by a phase transformation. Reducing conditions during the spray process lead to a deposition of the MCF in a metastable rock salt configuration. Annealing in air activates diffusion processes for a phase transformation to the low temperature stable spinel phase (T < 1050 °C). This transformation is connected to an oxygen incorporation which occurs at regions facing high oxygen partial pressures, as there are the sample surface, cracks and pore surfaces. Calculations reveal a volume expansion induced by the oxygen uptake which seals the cracks and densifies the coating. The process decelerates when the cracks are closed, as the gas route is blocked and further oxidation continues over solid state diffusion. The self-healing abilities of metastable APS coatings could be interesting for other applications.

Significantly improved photovoltaic performance in polymer bulk heterojunction solar cells with graphene oxide /PEDOT:PSS double decked hole transport layer.

PubMed

Rafique, Saqib; Abdullah, Shahino Mah; Shahid, Muhammad Mehmood; Ansari, Mohammad Omaish; Sulaiman, Khaulah

2017-01-13

This work demonstrates the high performance graphene oxide (GO)/PEDOT:PSS doubled decked hole transport layer (HTL) in the PCDTBT:PC 71 BM based bulk heterojunction organic photovoltaic device. The devices were tested on merits of their power conversion efficiency (PCE), reproducibility, stability and further compared with the devices with individual GO or PEDOT:PSS HTLs. Solar cells employing GO/PEDOT:PSS HTL yielded a PCE of 4.28% as compared to either of individual GO or PEDOT:PSS HTLs where they demonstrated PCEs of 2.77 and 3.57%, respectively. In case of single GO HTL, an inhomogeneous coating of ITO caused the poor performance whereas PEDOT:PSS is known to be hygroscopic and acidic which upon direct contact with ITO reduced the device performance. The improvement in the photovoltaic performance is mainly ascribed to the increased charge carriers mobility, short circuit current, open circuit voltage, fill factor, and decreased series resistance. The well matched work function of GO and PEDOT:PSS is likely to facilitate the charge transportation and an overall reduction in the series resistance. Moreover, GO could effectively block the electrons due to its large band-gap of ~3.6 eV, leading to an increased shunt resistance. In addition, we also observed the improvement in the reproducibility and stability.

Significantly improved photovoltaic performance in polymer bulk heterojunction solar cells with graphene oxide /PEDOT:PSS double decked hole transport layer

NASA Astrophysics Data System (ADS)

Rafique, Saqib; Abdullah, Shahino Mah; Shahid, Muhammad Mehmood; Ansari, Mohammad Omaish; Sulaiman, Khaulah

2017-01-01

This work demonstrates the high performance graphene oxide (GO)/PEDOT:PSS doubled decked hole transport layer (HTL) in the PCDTBT:PC71BM based bulk heterojunction organic photovoltaic device. The devices were tested on merits of their power conversion efficiency (PCE), reproducibility, stability and further compared with the devices with individual GO or PEDOT:PSS HTLs. Solar cells employing GO/PEDOT:PSS HTL yielded a PCE of 4.28% as compared to either of individual GO or PEDOT:PSS HTLs where they demonstrated PCEs of 2.77 and 3.57%, respectively. In case of single GO HTL, an inhomogeneous coating of ITO caused the poor performance whereas PEDOT:PSS is known to be hygroscopic and acidic which upon direct contact with ITO reduced the device performance. The improvement in the photovoltaic performance is mainly ascribed to the increased charge carriers mobility, short circuit current, open circuit voltage, fill factor, and decreased series resistance. The well matched work function of GO and PEDOT:PSS is likely to facilitate the charge transportation and an overall reduction in the series resistance. Moreover, GO could effectively block the electrons due to its large band-gap of ~3.6 eV, leading to an increased shunt resistance. In addition, we also observed the improvement in the reproducibility and stability.

Design and fabrication of a reflection far ultraviolet polarizer and retarder

NASA Technical Reports Server (NTRS)

Kim, Jongmin; Zukic, Muamer; Wilson, Michele M.; Torr, Douglas G.

1993-01-01

New methods have been developed for the design of a far ultraviolet multilayer reflection polarizer and retarder. A MgF2/Al/MgF2 three-layer structure deposited on a thick opaque Al film (substrate) is used for the design of polarizers and retarders. The induced transmission and absorption method is used for the design of a polarizer and layer-by-layer electric field calculation method is used for the design of a quarterwave retarder. In order to fabricate these designs in a conventional high vacuum chamber, we have to minimize the oxidation of the Al layers and somehow characterize the oxidized layer. X-ray photoelectron spectroscopy is used to investigate the amount and profile of oxidation. Depth profiling results and a seven layer oxidation model are presented.

Catalytic allylic oxidation of internal alkenes to a multifunctional chiral building block

NASA Astrophysics Data System (ADS)

Bayeh, Liela; Le, Phong Q.; Tambar, Uttam K.

2017-07-01

The stereoselective oxidation of hydrocarbons is one of the most notable advances in synthetic chemistry over the past fifty years. Inspired by nature, enantioselective dihydroxylations, epoxidations and other oxidations of unsaturated hydrocarbons have been developed. More recently, the catalytic enantioselective allylic carbon-hydrogen oxidation of alkenes has streamlined the production of pharmaceuticals, natural products, fine chemicals and other functional materials. Allylic functionalization provides a direct path to chiral building blocks with a newly formed stereocentre from petrochemical feedstocks while preserving the olefin functionality as a handle for further chemical elaboration. Various metal-based catalysts have been discovered for the enantioselective allylic carbon-hydrogen oxidation of simple alkenes with cyclic or terminal double bonds. However, a general and selective allylic oxidation using the more common internal alkenes remains elusive. Here we report the enantioselective, regioselective and E/Z-selective allylic oxidation of unactivated internal alkenes via a catalytic hetero-ene reaction with a chalcogen-based oxidant. Our method enables non-symmetric internal alkenes to be selectively converted into allylic functionalized products with high stereoselectivity and regioselectivity. Stereospecific transformations of the resulting multifunctional chiral building blocks highlight the potential for rapidly converting internal alkenes into a broad range of enantioenriched structures that can be used in the synthesis of complex target molecules.

Controlling block copolymer phase behavior using ionic surfactant

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ray, D.; Aswal, V. K.

2016-05-23

The phase behavior of poly(ethylene oxide)-poly(propylene oxide-poly(ethylene oxide) PEO-PPO-PEO triblock copolymer [P85 (EO{sub 26}PO{sub 39}EO{sub 26})] in presence of anionic surfactant sodium dodecyl sulfate (SDS) in aqueous solution as a function of temperature has been studied using dynamic light scattering (DLS) and small-angle neutron scattering (SANS). The measurements have been carried out for fixed concentrations (1 wt%) of block copolymer and surfactants. Each of the individual components (block copolymer and surfactant) and the nanoparticle–surfactant mixed system have been examined at varying temperature. The block copolymer P85 forms spherical micelles at room temperature whereas shows sphere-to-rod like micelle transition at highermore » temperatures. On the other hand, SDS surfactant forms ellipsoidal micelles over a wide temperature range. Interestingly, it is found that phase behavior of mixed micellar system (P85 + SDS) as a function of temperature is drastically different from that of P85, giving the control over the temperature-dependent phase behavior of block copolymers.« less

Control of the Structure of Diffusion Layer in Carbon Steels Under Nitriding with Preliminary Deposition of Copper Oxide Catalytic Films

NASA Astrophysics Data System (ADS)

Petrova, L. G.; Aleksandrov, V. A.; Malakhov, A. Yu.

2017-07-01

The effect of thin films of copper oxide deposited before nitriding on the phase composition and the kinetics of growth of diffusion layers in carbon steels is considered. The process of formation of an oxide film involves chemical reduction of pure copper on the surface of steel specimens from a salt solution and subsequent oxidation under air heating. The oxide film exerts a catalytic action in nitriding of low- and medium-carbon steels, which consists in accelerated growth of the diffusion layer, the nitride zone in the first turn. The kinetics of the nitriding process and the phase composition of the layer are controlled by the thickness of the copper oxide precursor, i.e., the deposited copper film.

Preliminary study of a solar selective coating system using black cobalt oxide for high temperature solar collectors

NASA Technical Reports Server (NTRS)

Mcdonald, G.

1980-01-01

Black cobalt oxide coatings (high solar absorptance layer) were deposited on thin layers of silver or gold (low emittance layer) which had been previously deposited on oxidized (diffusion barrier layer) stainless steel substrates. The reflectance properties of these coatings were measured at various thicknesses of cobalt for integrated values of the solar and infrared spectrum. The values of absorptance and emittance were calculated from the measured reflectance values, before and after exposure in air at 650 C for approximately 1000 hours. Absorptance and emittance were interdependent functions of the weight of cobalt oxide. Also, these cobalt oxide/noble metal/oxide diffusion barrier coatings have absorptances greater than 0.90 and emittances of approximately 0.20 even after about 1000 hours at 650 C.

Flow Separation

DTIC Science & Technology

1975-11-01

PLENUM CHAMBER 4 DIFFUSER 2 FIXEn NOZZLE BLOCK 5 MODEL i MOVABLE NOZZLE BLOCK 6 SUPPORT Fig. 3. Trl-Color Filter ...boun- dary layer ( Model 2) to examine scaling effects. Special attention was paid to the phenomenon of flow separation in three dimensions...consequence. Special attention should be paid to the difference in scale of an average boundary layer thickness between Model 1 and 2. Because

Injectible bodily prosthetics employing methacrylic copolymer gels

DOEpatents

Mallapragada, Surya K.; Anderson, Brian C.

2007-02-27

The present invention provides novel block copolymers as structural supplements for injectible bodily prosthetics employed in medical or cosmetic procedures. The invention also includes the use of such block copolymers as nucleus pulposus replacement materials for the treatment of degenerative disc disorders and spinal injuries. The copolymers are constructed by polymerization of a tertiary amine methacrylate with either a (poly(ethylene oxide)-b-poly(propylene oxide)-b-poly(ethylene oxide) polymer, such as the commercially available Pluronic.RTM. polymers, or a poly(ethylene glycol) methyl ether polymer.

Solid oxide fuel cell operable over wide temperature range

DOEpatents

Baozhen, Li; Ruka, Roswell J.; Singhal, Subhash C.

2001-01-01

Solid oxide fuel cells having improved low-temperature operation are disclosed. In one embodiment, an interfacial layer of terbia-stabilized zirconia is located between the air electrode and electrolyte of the solid oxide fuel cell. The interfacial layer provides a barrier which controls interaction between the air electrode and electrolyte. The interfacial layer also reduces polarization loss through the reduction of the air electrode/electrolyte interfacial electrical resistance. In another embodiment, the solid oxide fuel cell comprises a scandia-stabilized zirconia electrolyte having high electrical conductivity. The scandia-stabilized zirconia electrolyte may be provided as a very thin layer in order to reduce resistance. The scandia-stabilized electrolyte is preferably used in combination with the terbia-stabilized interfacial layer. The solid oxide fuel cells are operable over wider temperature ranges and wider temperature gradients in comparison with conventional fuel cells.

Interfacial material for solid oxide fuel cell

DOEpatents

Baozhen, Li; Ruka, Roswell J.; Singhal, Subhash C.

1999-01-01

Solid oxide fuel cells having improved low-temperature operation are disclosed. In one embodiment, an interfacial layer of terbia-stabilized zirconia is located between the air electrode and electrolyte of the solid oxide fuel cell. The interfacial layer provides a barrier which controls interaction between the air electrode and electrolyte. The interfacial layer also reduces polarization loss through the reduction of the air electrode/electrolyte interfacial electrical resistance. In another embodiment, the solid oxide fuel cell comprises a scandia-stabilized zirconia electrolyte having high electrical conductivity. The scandia-stabilized zirconia electrolyte may be provided as a very thin layer in order to reduce resistance. The scandia-stabilized electrolyte is preferably used in combination with the terbia-stabilized interfacial layer. The solid oxide fuel cells are operable over wider temperature ranges and wider temperature gradients in comparison with conventional fuel cells.

Interfacial layers in high-temperature-oxidized NiCrAl

NASA Technical Reports Server (NTRS)

Larson, L. A.; Browning, R.; Poppa, H.; Smialek, J.

1983-01-01

The utility of Auger electron spectroscopy combined with ball cratering for depth analysis of oxide and diffusion layers produced in a Ni-14Cr-24Al alloy by oxidation in air at 1180 C for 25 hr is demonstrated. During postoxidation cooling, the oxide layers formed by this alloy spalled profusely. The remaining very thin oxide was primarily Cr2O3 with a trace of Ni. The underlying metal substrate exhibited gamma/gamma-prime and beta phases with a metallic interfacial layer which was similar to the bulk gamma/gamma-prime phase but slightly enriched in Cr and Al. These data are compared to electron microprobe results from a nominally identical alloy. The diffusion layer thickness is modelled with a simple mass balance equation and compared to recent results on the diffusion process in NiCrAl alloys.

Formation of crack-free nanoporous tin oxide layers via simple one-step anodic oxidation in NaOH at low applied voltages

NASA Astrophysics Data System (ADS)

Zaraska, Leszek; Gilek, Dominika; Gawlak, Karolina; Jaskuła, Marian; Sulka, Grzegorz D.

2016-12-01

A simple anodic oxidation of metallic tin in fluoride-free alkaline electrolyte at low potentials was proposed as a new and effective strategy for fabrication of crack-free nanoporous tin oxide layers. A low-purity Sn foil (98.8%) was used as a starting material, and a series of anodizations were performed in 1 M NaOH at different conditions such as anodizing potential, and duration of the process. It was proved for the first time that nanostructured tin oxides with ultra-small nanochannels having diameters of <15 nm can be synthesized by simple anodization of metallic tin at a potential of 2 V in 1 M NaOH electrolyte. Increasing anodizing potential to 3 and 4 V allowed for formation of tin oxide layers with much larger pores (40-50 nm in diameter) which were still free from internal cracks and transversal pores. Applying such low potentials significantly reduces the oxide growth rate and suppresses vigorous oxygen evolution at the anode. As a result mechanical deterioration of the oxide structure is prevented while strongly alkaline electrolyte is responsible for formation of the porous layer with completely open pores even at such low potentials. On the contrary, when anodization was carried out at potentials of 5 and 6 V, much faster formation of anodic layer, accompanied by vigorous oxygen gas formation, was observed. In consequence, as grown oxide layers exhibited typical cracked or even stacked internal structure. Finally, we demonstrated for the first time that nanoporous tin oxide layers with segments of different channel sizes can be successfully obtained by simple altering potential during anodization.

Environmentally-assisted technique for transferring devices onto non-conventional substrates

DOEpatents

Lee, Chi-Hwan; Kim, Dong Rip; Zheng, Xiaolin

2014-08-26

A device fabrication method includes: (1) providing a growth substrate including a base and an oxide layer disposed over the base; (2) forming a metal layer over the oxide layer; (3) forming a stack of device layers over the metal layer; (4) performing interfacial debonding of the metal layer to separate the stack of device layers and the metal layer from the growth substrate; and (5) affixing the stack of device layers to a target substrate.

Highly Flexible Self-Assembled V2O5 Cathodes Enabled by Conducting Diblock Copolymers

NASA Astrophysics Data System (ADS)

An, Hyosung; Mike, Jared; Smith, Kendall; Swank, Lisa; Lin, Yen-Hao; Pesek, Stacy; Verduzco, Rafael; Lutkenhaus, Jodie

Structural energy storage materials combining load-bearing mechanical properties and high energy storage performance are desired for applications in wearable devices or flexible displays. Vanadium pentoxide (V2O5) is a promising cathode material for possible use in flexible battery electrodes, but it remains limited by low Li+ diffusion coefficient and electronic conductivity, severe volumetric changes upon cycling, and limited mechanical flexibility. Here, we demonstrate a route to address these challenges by blending a diblock copolymer bearing electron- and ion-conducting blocks, poly(3-hexylthiophene)-block-poly(ethyleneoxide) (P3HT- b-PEO), with V2O5 to form a mechanically flexible, electro-mechanically stable hybrid electrode. V2O5 layers were arranged parallel in brick-and-mortar-like fashion held together by the P3HT- b-PEO binder. This unique structure significantly enhances mechanical flexibility, toughness and cyclability without sacrificing capacity. Electrodes comprised of 10 wt% polymer have unusually high toughness (293 kJ/m3) and specific energy (530 Wh/kg), both higher than reduced graphene oxide paper electrodes.

Chromium oxide as a metal diffusion barrier layer: An x-ray absorption fine structure spectroscopy study

NASA Astrophysics Data System (ADS)

Ahamad Mohiddon, Md.; Lakshun Naidu, K.; Ghanashyam Krishna, M.; Dalba, G.; Ahmed, S. I.; Rocca, F.

2014-01-01

The interaction at the interface between chromium and amorphous Silicon (a-Si) films in the presence of a sandwich layer of chromium oxide is investigated using X-ray absorption fine structure (XAFS) spectroscopy. The oxidized interface was created, in situ, prior to the deposition of a 400 nm tick a-Si layer over a 50 nm tick Cr layer. The entire stack of substrate/metallic Cr/Cr2O3/a-Si was then annealed at temperatures from 300 up to 700 °C. Analysis of the near edge and extended regions of each XAFS spectrum shows that only a small fraction of Cr is able to diffuse through the oxide layer up to 500 °C, while the remaining fraction is buried under the oxide layer in the form of metallic Cr. At higher temperatures, diffusion through the oxide layer is enhanced and the diffused metallic Cr reacts with a-Si to form CrSi2. At 700 °C, the film contains Cr2O3 and CrSi2 without evidence of unreacted metallic Cr. The activation energy and diffusion coefficient of Cr are quantitatively determined in the two temperature regions, one where the oxide acts as diffusion barrier and another where it is transparent to Cr diffusion. It is thus demonstrated that chromium oxide can be used as a diffusion barrier to prevent metal diffusion into a-Si.

Characterization of Ultrathin Ta-oxide Films Formed on Ge(100) by ALD and Layer-by-Layer Methods

NASA Astrophysics Data System (ADS)

Mishima, K.; Murakami, H.; Ohta, A.; Sahari, S. K.; Fujioka, T.; Higashi, S.; Miyazaki, S.

2013-03-01

Atomic layer deposition (ALD) and Layer-by-Layer deposition of Ta-oxide films on Ge(100) with using tris (tert-butoxy) (tert-butylimido) tantalum have been studied systematically. From the analysis of the chemical bonding features of the interface between TaOx and Ge(100) using x-ray photoelectron spectroscopy (XPS), Ge atom diffusion into the Ta oxide layer and resultant TaGexOy formation during deposition at temperatures higher than 200°C were confirmed. Also, we have demonstrated that nanometer-thick deposition of Tantalum oxide as an interfacial layer effectively suppresses the formation of GeOx in the HfO2 ALD on Ge. By the combination of TaOx pre-deposition on Ge(100) and subsequent ALD of HfO2, a capacitance equivalent thickness (CET) of 1.35 nm and relative dielectric constant of 23 were achieved.

Pd/Ni-WO3 anodic double layer gasochromic device

DOEpatents

Lee, Se-Hee; Tracy, C. Edwin; Pitts, J. Roland; Liu, Ping

2004-04-20

An anodic double layer gasochromic sensor structure for optical detection of hydrogen in improved response time and with improved optical absorption real time constants, comprising: a glass substrate; a tungsten-doped nickel oxide layer coated on the glass substrate; and a palladium layer coated on the tungsten-doped nickel oxide layer.

Intermediate coating layer for high temperature rubbing seals for rotary regenerators

DOEpatents

Schienle, James L.; Strangman, Thomas E.

1995-01-01

A metallic regenerator seal is provided having multi-layer coating comprising a NiCrAlY bond layer, a yttria stabilized zirconia (YSZ) intermediate layer, and a ceramic high temperature solid lubricant surface layer comprising zinc oxide, calcium fluoride, and tin oxide. Because of the YSZ intermediate layer, the coating is thermodynamically stable and resists swelling at high temperatures.

A bio-inspired microstructure induced by slow injection moulding of cylindrical block copolymers.

PubMed

Stasiak, Joanna; Brubert, Jacob; Serrani, Marta; Nair, Sukumaran; de Gaetano, Francesco; Costantino, Maria Laura; Moggridge, Geoff D

2014-08-28

It is well known that block copolymers with cylindrical morphology show alignment with shear, resulting in anisotropic mechanical properties. Here we show that well-ordered bi-directional orientation can be achieved in such materials by slow injection moulding. This results in a microstructure, and anisotropic mechanical properties, similar to many natural tissues, making this method attractive for engineering prosthetic fibrous tissues. An application of particular interest to us is prosthetic polymeric heart valve leaflets, mimicking the shape, microstructure and hence performance of the native valve. Anisotropic layers have been observed for cylinder-forming block copolymers centrally injected into thin circular discs. The skin layers exhibit orientation parallel to the flow direction, whilst the core layer shows perpendicularly oriented domains; the balance of skin to core layers can be controlled by processing parameters such as temperature and injection rate. Heart valve leaflets with a similar layered structure have been prepared by injection moulding. Numerical modelling demonstrates that such complex orientation can be explained and predicted by the balance of shear and extensional flow.

Analysis of the abnormal voltage-current behaviors on localized carriers of InGaN/GaN multiple quantum well from electron blocking layer

NASA Astrophysics Data System (ADS)

Nam, Giwoong; Kim, Byunggu; Leem, Jae-Young; Lee, Dong-Yul; Kim, Jong Su; Kim, Jin Soo

2013-11-01

The effect of an electron blocking layer (EBL) on the V — I curves for GaN/InGaN multiple quantum wells is investigated. For the first time, we found that the curves intersected at 3.012 V, and we investigated the reason for the intersection. The forward voltage in LEDs with a p-AlGaN EBL is larger than it is without the p-AlGaN EBL at low injection currents because the Mg-doping efficiency for the p-GaN layer is higher than that for the p-AlGaN layer. However, the forward voltage in LEDs with a p-AlGaN EBL is smaller than it is without the p-AlGaN EBL at high injection currents because the carriers overflow from the active layer when the injection current increases in LEDs without a p-AlGaN EBL, in case of LEDs with a p-AlGaN EBL, the carriers are blocked by the EBL.

The improvement of GaN-based LED grown on concave nano-pattern sapphire substrate with SiO2 blocking layer

NASA Astrophysics Data System (ADS)

Lin, Jyun-Hao; Huang, Shyh-Jer; Su, Yan-Kuin; Huang, Kai-Wen

2015-11-01

In contrast to convex nano-pattern sapphire substrates (NPSS), which are frequently used to fabricate high-quality nitride-based light-emitting diodes (LEDs), concave NPSS have been paid relatively less attention. In this study, a concave NPSS was fabricated, and its nitride epitaxial growth process was evaluated in a step by step manner. A SiO2 layer was used to avoid nucleation over the sidewall and bottom of the nano-patterns to reduce dislocation reformation. Traditional LED structures were grown on the NPSS layer to determine its influence on device performance. X-ray diffraction, etched pit density, inverse leakage current, and internal quantum efficiency (IQE) results showed that dislocations and non-radiative recombination centers are reduced by the NPSS constructed with a SiO2 blocking layer. An IQE twice that on a planar substrate was also achieved; such a high IQE significantly enhanced the external quantum efficiency of the resultant device. Taken together, the results demonstrate that the SiO2 blocking layer proposed in this work can enhance the performance of LEDs.

Ceramic with preferential oxygen reactive layer

NASA Technical Reports Server (NTRS)

Wang, Hongyu (Inventor); Luthra, Krishan Lal (Inventor)

2001-01-01

An article comprises a silicon-containing substrate and an external environmental/thermal barrier coating. The external environmental/thermal barrier coating is permeable to diffusion of an environmental oxidant and the silicon-containing substrate is oxidizable by reaction with oxidant to form at least one gaseous product. The article comprises an intermediate layer/coating between the silicon-containing substrate and the environmental/thermal barrier coating that is oxidizable to a nongaseous product by reaction with the oxidant in preference to reaction of the silicon-containing substrate with the oxidant. A method of forming an article, comprises forming a silicon-based substrate that is oxidizable by reaction with oxidant to at least one gaseous product and applying an intermediate layer/coating onto the substrate, wherein the intermediate layer/coating is oxidizable to a nongaseous product by reaction with the oxidant in preference to reaction of the silicon-containing substrate with the oxidant.

Improving Block-level Efficiency with scsi-mq

DOE Office of Scientific and Technical Information (OSTI.GOV)

Caldwell, Blake A

2015-01-01

Current generation solid-state storage devices are exposing a new bottlenecks in the SCSI and block layers of the Linux kernel, where IO throughput is limited by lock contention, inefficient interrupt handling, and poor memory locality. To address these limitations, the Linux kernel block layer underwent a major rewrite with the blk-mq project to move from a single request queue to a multi-queue model. The Linux SCSI subsystem rework to make use of this new model, known as scsi-mq, has been merged into the Linux kernel and work is underway for dm-multipath support in the upcoming Linux 4.0 kernel. These piecesmore » were necessary to make use of the multi-queue block layer in a Lustre parallel filesystem with high availability requirements. We undertook adding support of the 3.18 kernel to Lustre with scsi-mq and dm-multipath patches to evaluate the potential of these efficiency improvements. In this paper we evaluate the block-level performance of scsi-mq with backing storage hardware representative of a HPC-targerted Lustre filesystem. Our findings show that SCSI write request latency is reduced by as much as 13.6%. Additionally, when profiling the CPU usage of our prototype Lustre filesystem, we found that CPU idle time increased by a factor of 7 with Linux 3.18 and blk-mq as compared to a standard 2.6.32 Linux kernel. Our findings demonstrate increased efficiency of the multi-queue block layer even with disk-based caching storage arrays used in existing parallel filesystems.« less

Method for producing chemical energy

DOEpatents

Jorgensen, Betty S.; Danen, Wayne C.

2004-09-21

Fluoroalkylsilane-coated metal particles having a central metal core, a buffer layer surrounding the core, and a fluoroalkylsilane layer attached to the buffer layer are prepared by combining a chemically reactive fluoroalkylsilane compound with an oxide coated metal particle having a hydroxylated surface. The resulting fluoroalkylsilane layer that coats the particles provides them with excellent resistance to aging. The particles can be blended with oxidant particles to form energetic powder that releases chemical energy when the buffer layer is physically disrupted so that the reductant metal core can react with the oxidant.

Energetic powder

DOEpatents

Jorgensen, Betty S.; Danen, Wayne C.

2003-12-23

Fluoroalkylsilane-coated metal particles. The particles have a central metal core, a buffer layer surrounding the core, and a fluoroalkylsilane layer attached to the buffer layer. The particles may be prepared by combining a chemically reactive fluoroalkylsilane compound with an oxide coated metal particle having a hydroxylated surface. The resulting fluoroalkylsilane layer that coats the particles provides them with excellent resistance to aging. The particles can be blended with oxidant particles to form energetic powder that releases chemical energy when the buffer layer is physically disrupted so that the reductant metal core can react with the oxidant.

Enhancing the performance of blue GaN-based light emitting diodes with double electron blocking layers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Guo, Yao; Liang, Meng; Fu, Jiajia

2015-03-15

In this work, novel double Electron Blocking Layers for InGaN/GaN multiple quantum wells light-emitting diodes were proposed to mitigate the efficiency droop at high current density. The band diagram and carriers distributions were investigated numerically. The results indicate that due to a newly formed holes stack in the p-GaN near the active region, the hole injection has been improved and an uniform carriers distribution can be achieved. As a result, in our new structure with double Electron Blocking Layers, the efficiency droop has been reduced to 15.5 % in comparison with 57.3 % for the LED with AlGaN EBL atmore » the current density of 100 A/cm{sup 2}.« less

Superconductivity in REO0.5F0.5BiS2 with high-entropy-alloy-type blocking layers

NASA Astrophysics Data System (ADS)

Sogabe, Ryota; Goto, Yosuke; Mizuguchi, Yoshikazu

2018-05-01

We synthesized new REO0.5F0.5BiS2 (RE: rare earth) superconductors with high-entropy-alloy-type (HEA-type) REO blocking layers. The lattice constant a systematically changed in the HEA-type samples with the RE concentration and the RE ionic radius. A sharp superconducting transition was observed in the resistivity measurements for all the HEA-type samples, and the transition temperature of the HEA-type samples was higher than that of typical REO0.5F0.5BiS2. The sharp superconducting transition and the enhanced superconducting properties of the HEA-type samples may indicate the effectiveness of the HEA states of the REO blocking layers in the REO0.5F0.5BiS2 system.

Experimental and Modeling Studies on the Microstructures and Properties of Oxidized Aluminum Nitride Ceramic Substrates

NASA Astrophysics Data System (ADS)

Cao, Ye; Xu, Haixian; Zhan, Jun; Zhang, Hao; Wei, Xin; Wang, Jianmin; Cui, Song; Tang, Wenming

2018-05-01

Oxidation of aluminum nitride (AlN) ceramic substrates doped with 2 wt.% Y2O3 was performed in air at temperatures ranging from 1000 to 1300 °C for various lengths of time. Microstructure, bending strength, and thermal conductivity of the oxidized AlN substrates were studied experimentally and also via mathematical models. The results show that the oxide layer formed on the AlN substrates is composed of α-Al2O3 nanocrystallines and interconnected micropores. Longitudinal and transverse cracks are induced in the oxide layer under tensile and shear stresses, respectively. Intergranular oxidation of the AlN grains close to the oxide layer/AlN interface also occurs, leading to widening and cracking of the AlN grain boundaries. These processes result in the monotonous degradation of bending strength and thermal conductivity of the oxidized AlN substrates. Two mathematic models concerning these properties of the oxidized AlN substrates versus the oxide layer thickness were put forward. They fit well with the experimental results.

Layered CU-based electrode for high-dielectric constant oxide thin film-based devices

DOEpatents

Auciello, Orlando

2010-05-11

A layered device including a substrate; an adhering layer thereon. An electrical conducting layer such as copper is deposited on the adhering layer and then a barrier layer of an amorphous oxide of TiAl followed by a high dielectric layer are deposited to form one or more of an electrical device such as a capacitor or a transistor or MEMS and/or a magnetic device.

Effect of different alloyed layers on the high temperature oxidation behavior of newly developed Ti 2AlNb-based alloys

NASA Astrophysics Data System (ADS)

Wu, Hongyan; Zhang, Pingze; Zhao, Haofeng; Wang, Ling; Xie, Aigen

2011-01-01

The application of titanium aluminide orthorhombic alloys (O-phase alloys) as potential materials in aircraft and jet engines was limited by their poor oxidation resistance at high temperature. The Ti 2AlNb-based alloys were chromised (Cr), chromium-tungstened (Cr-W) and nickel-chromised (Ni-Cr) by the double glow plasma surface alloying process to improve their high temperature oxidation resistance. The discontinuous oxidative behavior of Cr, Cr-W and Ni-Cr alloyed layers on Ti 2AlNb-based alloy at 1093 K was explored in this study. After exposing at 1093 K, the TiO 2 layer was formed on the bare alloy and accompanied by the occurrence of crack, which promoted oxidation rate. The oxidation behavior of Ti 2AlNb-based alloys was improved by surface alloying due to the formation of protective Al 2O 3 scale or continuous and dense NiCr 2O 4 film. The Ni-Cr alloyed layer presented the best high-temperature oxidation resistance among three alloyed layers.

Preparation of novel layer-stack hexagonal CdO micro-rods by a pre-oxidation and subsequent evaporation process

DOE Office of Scientific and Technical Information (OSTI.GOV)

Peng, Kun, E-mail: kpeng@hnu.edu.cn; Hunan Province Key Laboratory for Spray Deposition Technology and Application, Hunan University, Changsha 410082; Jiang, Pan

2014-12-15

Graphical abstract: Layer-stack hexagonal cadmium oxide (CdO) micro-rods were prepared. - Highlights: • Novel hexagonal layer-stack structure CdO micro-rods were synthesized by a thermal evaporation method. • The pre-oxidation, vapor pressure and substrate nature play a key role on the formation of CdO rods. • The formation mechanism of CdO micro-rods was explained. - Abstract: Novel layer-stack hexagonal cadmium oxide (CdO) micro-rods were prepared by pre-oxidizing Cd granules and subsequent thermal oxidation under normal atmospheric pressure. X-ray diffraction (XRD) and scanning electron microscopy (SEM) were performed to characterize the phase structure and microstructure. The pre-oxidation process, vapor pressure and substratemore » nature were the key factors for the formation of CdO micro-rods. The diameter of micro-rod and surface rough increased with increasing of thermal evaporation temperature, the length of micro-rod increased with the increasing of evaporation time. The formation of hexagonal layer-stack structure was explained by a vapor–solid mechanism.« less

Streaming potential method for characterizing interaction of electrical double layers between rice roots and Fe/Al oxide-coated quartz in situ.

PubMed

Liu, Zhao-Dong; Wang, Hai-Cui; Li, Jiu-Yu; Xu, Ren-Kou

2017-10-01

The interaction between rice roots and Fe/Al oxide-coated quartz was investigated through zeta potential measurements and column leaching experiments in present study. The zeta potentials of rice roots, Fe/Al oxide-coated quartz, and the binary systems containing rice roots and Fe/Al oxide-coated quartz were measured by a specially constructed streaming potential apparatus. The interactions between rice roots and Fe/Al oxide-coated quartz particles were evaluated/deduced based on the differences of zeta potentials between the binary systems and the single system of rice roots. The zeta potentials of the binary systems moved in positive directions compared with that of rice roots, suggesting that there were overlapping of diffuse layers of electric double layers on positively charged Fe/Al oxide-coated quartz and negatively charged rice roots and neutralization of positive charge on Fe/Al oxide-coated quartz with negative charge on rice roots. The greater amount of positive charges on Al oxide led to the stronger interaction of Al oxide-coated quartz with rice roots and the more shift of zeta potential compared with Fe oxide. The overlapping of diffuse layers on Fe/Al oxide-coated quartz and rice roots was confirmed by column leaching experiments. The greater overlapping of diffuse layers on Al oxide and rice roots led to more simultaneous adsorptions of K + and NO 3 - and greater reduction in leachate electric conductivity when the column containing Al oxide-coated quartz and rice roots was leached with KNO 3 solution, compared with the columns containing rice roots and Fe oxide-coated quartz or quartz. When the KNO 3 solution was replaced with deionized water to flush the columns, more K + and NO 3 - were desorbed from the binary system containing Al oxide-coated quartz and rice roots than from other two binary systems, suggesting that the stronger electrostatic interaction between Al oxide and rice roots promoted the desorption of K + and NO 3 - from the binary system and enhanced overlapping of diffuse layers on these oppositely charged surfaces compared with other two binary systems. In conclusion, the overlapping of diffuse layers occurred between positively charged Fe/Al oxides and rice roots, which led to neutralization of opposite charge and affected adsorption and desorption of ions onto and from the charged surfaces of Fe/Al oxides and rice roots.

Local oxidation using scanning probe microscope for fabricating magnetic nanostructures.

PubMed

Takemura, Yasushi

2010-07-01

Local oxidation technique using atomic force microscope (AFM) was studied. The local oxidation of ferromagnetic metal thin films was successfully performed by AFM under both contact and dynamic force modes. Modification of magnetic and electrical properties of magnetic devices fabricated by the AFM oxidation was achieved. Capped oxide layers deposited on the ferromagnetic metal films are advantageous for stable oxidation due to hydrophilic surface of oxide. The oxide layer is also expected to prevent magnetic devices from degradation by oxidation of ferromagnetic metal. As for modification of magnetic property, the isolated region of CoFe layer formed by nanowires of CoFe-oxide exhibited peculiar characteristic attributed to the isolated magnetization property and pinning of domain wall during magnetization reversal. Temperature dependence of current-voltage characteristic of the planar-type tunnel junction consisting of NiFe/NiFe-oxide/NiFe indicated that the observed current was dominated by intrinsic tunneling current at the oxide barrier.

Evaluation of Graphene/WO3 and Graphene/CeO x Structures as Electrodes for Supercapacitor Applications

NASA Astrophysics Data System (ADS)

Chaitoglou, Stefanos; Amade, Roger; Bertran, Enric

2017-12-01

The combination of graphene with transition metal oxides can result in very promising hybrid materials for use in energy storage applications thanks to its intriguing properties, i.e., highly tunable surface area, outstanding electrical conductivity, good chemical stability, and excellent mechanical behavior. In the present work, we evaluate the performance of graphene/metal oxide (WO3 and CeO x ) layered structures as potential electrodes in supercapacitor applications. Graphene layers were grown by chemical vapor deposition (CVD) on copper substrates. Single and layer-by-layer graphene stacks were fabricated combining graphene transfer techniques and metal oxides grown by magnetron sputtering. The electrochemical properties of the samples were analyzed and the results suggest an improvement in the performance of the device with the increase in the number of graphene layers. Furthermore, deposition of transition metal oxides within the stack of graphene layers further improves the areal capacitance of the device up to 4.55 mF/cm2, for the case of a three-layer stack. Such high values are interpreted as a result of the copper oxide grown between the copper substrate and the graphene layer. The electrodes present good stability for the first 850 cycles before degradation.

Development of Pinhole-Free Amorphous Aluminum Oxide Protective Layers for Biomedical Device Applications

PubMed Central

Litvinov, Julia; Wang, Yi-Ju; George, Jinnie; Chinwangso, Pawilai; Brankovic, Stanko; Willson, Richard C.; Litvinov, Dmitri

2013-01-01

This paper describes synthesis of ultrathin pinhole-free insulating aluminum oxide layers for electronic device protection in corrosive liquid environments, such as phosphate buffered saline (PBS) or clinical fluids, to enable emerging biomedical applications such as biomolecular sensors. A pinhole-free 25-nm thick amorphous aluminum oxide layer has been achieved using ultra-high vacuum DC magnetron reactive sputtering of aluminum in oxygen/argon plasma followed by oxygen plasma post-processing. Deposition parameters were optimized to achieve the best corrosion protection of lithographically defined device structures. Electrochemical deposition of copper through the aluminum oxide layers was used to detect the presence (or absence) of pinholes. FTIR, XPS, and spectroscopic ellipsometry were used to characterize the material properties of the protective layers. Electrical resistance of the copper device structures protected by the aluminum oxide layers and exposed to a PBS solution was used as a metric to evaluate the long-term stability of these device structures. PMID:23682201

The influence of anatase-rutile mixed phase and ZnO blocking layer on dye-sensitized solar cells based on TiO2nanofiberphotoanodes

PubMed Central

2013-01-01

High performance is expected in dye-sensitized solar cells (DSSCs) that utilize one-dimensional (1-D) TiO2 nanostructures owing to the effective electron transport. However, due to the low dye adsorption, mainly because of their smooth surfaces, 1-D TiO2 DSSCs show relatively lower efficiencies than nanoparticle-based ones. Herein, we demonstrate a very simple approach using thick TiO2 electrospun nanofiber films as photoanodes to obtain high conversion efficiency. To improve the performance of the DSCCs, anatase-rutile mixed-phase TiO2 nanofibers are achieved by increasing sintering temperature above 500°C, and very thin ZnO films are deposited by atomic layer deposition (ALD) method as blocking layers. With approximately 40-μm-thick mixed-phase (approximately 15.6 wt.% rutile) TiO2 nanofiber as photoanode and 15-nm-thick compact ZnO film as a blocking layer in DSSC, the photoelectric conversion efficiency and short-circuit current are measured as 8.01% and 17.3 mA cm−2, respectively. Intensity-modulated photocurrent spectroscopy and intensity-modulated photovoltage spectroscopy measurements reveal that extremely large electron diffusion length is the key point to support the usage of thick TiO2 nanofibers as photoanodes with very thin ZnO blocking layers to obtain high photocurrents and high conversion efficiencies. PMID:23286741

Immobilization of bacterial S-layer proteins from Caulobacter crescentus on iron oxide-based nanocomposite: synthesis and spectroscopic characterization of zincite-coated Fe₂O₃ nanoparticles.

PubMed

Habibi, Neda

2014-05-05

Zinc oxide was coated on Fe2O3 nanoparticles using sol-gel spin-coating. Caulobacter crescentus have a crystalline surface layer (S-layer), which consist of one protein or glycoprotein species. The immobilization of bacterial S-layers obtained from C. crescentus on zincite-coated nanoparticles of iron oxide was investigated. The SDS PAGE results of S-layers isolated from C. crescentus showed the weight of 50 KDa. Nanoparticles of the Fe2O3 and zinc oxide were synthesized by a sol-gel technique. Fe2O3 nanoparticles with an average size of 50 nm were successfully prepared by the proper deposition of zinc oxide onto iron oxide nanoparticles surface annealed at 450 °C. The samples were characterized by field-emission scanning electron microscope (FESEM), atomic force microscopy (AFM), powder X-ray diffraction (XRD) and Fourier-transform infrared spectroscopy (FT-IR). Copyright © 2014 Elsevier B.V. All rights reserved.

Directed Self-Assembly on Photo-Crosslinked Polystyrene Sub-Layers: Nanopattern Uniformity and Orientation

PubMed Central

Koh, Haeng-Deog; Kim, Mi-Jeong

2016-01-01

A photo-crosslinked polystyrene (PS) thin film is investigated as a potential guiding sub-layer for polystyrene-block-poly (methyl methacrylate) block copolymer (BCP) cylindrical nanopattern formation via topographic directed self-assembly (DSA). When compared to a non-crosslinked PS brush sub-layer, the photo-crosslinked PS sub-layer provided longer correlation lengths of the BCP nanostructure, resulting in a highly uniform DSA nanopattern with a low number of BCP dislocation defects. Depending on the thickness of the sub-layer used, parallel or orthogonal orientations of DSA nanopattern arrays were obtained that covered the entire surface of patterned Si substrates, including both trench and mesa regions. The design of DSA sub-layers and guide patterns, such as hardening the sub-layer by photo-crosslinking, nano-structuring on mesas, the relation between trench/mesa width, and BCP equilibrium period, were explored with a view to developing defect-reduced DSA lithography technology. PMID:28773768

The growth of protective ultra-thin alumina layers on γ-TiAl(1 1 1) intermetallic single-crystal surfaces

NASA Astrophysics Data System (ADS)

Maurice, V.; Despert, G.; Zanna, S.; Josso, P.; Bacos, M.-P.; Marcus, P.

2005-12-01

An XPS and AES study of the early stages of oxidation of γ-TiAl(1 1 1) surfaces at 650 °C under 1.0 × 10 -7-1.0 × 10 -6 mbar O 2 is reported. The data evidence a first regime of oxidation characterized by the growth of a pure alumina layer followed by a second regime of simultaneous oxidation of both alloying elements. In the first regime, continuous alumina layers from ˜0.4 to ˜1.5 nm thick have been observed by angle-resolved XPS. The composition of the metallic phase underneath the growing oxide is modified by a depletion of Al and the injection of Al vacancies in the metal during the growth of the transient alumina formed at 650 °C. The onset of Ti oxidation was repeatedly observed for a critical concentration in the modified region of the alloy underneath the alumina layer: Ti 75±2Al 25±2 (Ti 50Al 17±2V(Al) 33±2), showing that decreasing the number of Ti-Al bonds in the modified intermetallic region increases the activity of Ti up to a critical point where its oxidation at the oxide/metal interface becomes competitive with that of Al. The growth of Ti 3+ and Ti 4+ oxide particles observed above the alumina layer by angle-resolved XPS indicates the transport of titanium cations trough the alumina layer and their subsequent reaction with oxygen at the outer gas/oxide interface. Improving structural ordering in the intermetallic phase slows down the growth kinetics of the alumina layer and the related Al-depletion of the substrate, and increases the resistance of the alloy to the subsequent oxidation of Ti. This is assigned to two combined effects: a slower diffusion of Al in the better ordered metallic phase and the growth of less defective alumina layers allowing to slow down the ionic transport through the oxide. Highly stable and corrosion resistant alloy surfaces covered by a 0.4 nm thick alumina layer have been obtained by slowly oxidizing the alloy at lower partial pressure (<5.0 × 10 -10 mbar O 2).

Bulk-heterojunction organic solar cells sandwiched by solution processed molybdenum oxide and titania nanosheet layers

NASA Astrophysics Data System (ADS)

Itoh, Eiji; Goto, Yoshinori; Fukuda, Katsutoshi

2014-02-01

The contributions of ultrathin titania nanosheet (TN) crystallites were studied in both an inverted bulk-heterojunction (BHJ) cell in an indium-tin oxide (ITO)/titania nanosheet (TN)/poly(3-hexylthiophene) (P3HT):phenyl-C61-butyric acid methylester (PCBM) active layer/MoOx/Ag multilayered photovoltaic device and a conventional BHJ cell in ITO/MoOx/P3HT:PCBM active layer/TN/Al multilayered photovoltaic device. The insertion of only one or two layers of poly(diallyldimethylammonium chloride) (PDDA) and TN multilayered film prepared by the layer-by-layer deposition technique effectively decreased the leakage current and increased the open circuit voltage (VOC), fill factor (FF), and power conversion efficiency (η). The conventional cell sandwiched between a solution-processed, partially crystallized molybdenum oxide hole-extracting buffer layer and a TN electron extracting buffer layer showed comparable cell performance to a device sandwiched between vacuum-deposited molybdenum oxide and TN layers, whereas the inverted cell with solution-processed molybdenum oxide showed a poorer performance probably owing to the increment in the leakage current across the film. The abnormal S-shaped curves observed in the inverted BHJ cell above VOC disappeared with the use of a polyfluorene-based cationic semiconducting polymer as a substitute for an insulating PDDA film, resulting in the improved cell performance.

Fabrication of heterojunction solar cells by improved tin oxide deposition on insulating layer

DOEpatents

Feng, Tom; Ghosh, Amal K.

1980-01-01

Highly efficient tin oxide-silicon heterojunction solar cells are prepared by heating a silicon substrate, having an insulating layer thereon, to provide a substrate temperature in the range of about 300.degree. C. to about 400.degree. C. and thereafter spraying the so-heated substrate with a solution of tin tetrachloride in a organic ester boiling below about 250.degree. C. Preferably the insulating layer is naturally grown silicon oxide layer.

Evidence of a reduction reaction of oxidized iron/cobalt by boron atoms diffused toward naturally oxidized surface of CoFeB layer during annealing

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sato, Soshi, E-mail: sato.soshi@cies.tohoku.ac.jp; Honjo, Hiroaki; Niwa, Masaaki

2015-04-06

We have investigated the redox reaction on the surface of Ta/CoFeB/MgO/CoFeB magnetic tunnel junction stack samples after annealing at 300, 350, and 400 °C for 1 h using angle-resolved X-ray photoelectron spectroscopy for precise analysis of the chemical bonding states. At a capping tantalum layer thickness of 1 nm, both the capping tantalum layer and the surface of the underneath CoFeB layer in the as-deposited stack sample were naturally oxidized. By comparison of the Co 2p and Fe 2p spectra among the as-deposited and annealed samples, reduction of the naturally oxidized cobalt and iron atoms occurred on the surface of the CoFeB layer.more » The reduction reaction was more significant at higher annealing temperature. Oxidized cobalt and iron were reduced by boron atoms that diffused toward the surface of the top CoFeB layer. A single CoFeB layer was prepared on SiO{sub 2}, and a confirmatory evidence of the redox reaction with boron diffusion was obtained by angle-resolved X-ray photoelectron spectroscopy analysis of the naturally oxidized surface of the CoFeB single layer after annealing. The redox reaction is theoretically reasonable based on the Ellingham diagram.« less

Plasma Spray and Pack Cementation Process Optimization and Oxidation Behaviour of Novel Multilayered Coatings

NASA Astrophysics Data System (ADS)

Gao, Feng

The hot section components in gas turbines are subjected to a harsh environment with the temperature being increased continuously. The higher temperature has directly resulted in severe oxidation of these components. Monolithic coatings such as MCrAIY and aluminide have been traditionally used to protect the components from oxidation; however, increased operating temperature quickly deteriorates the coatings due to accelerated diffusion of aluminum in the coatings. To improve the oxidation resistance a group of multilayered coatings are developed in this study. The multilayered coatings consist of a Cr-Si co-deposited layer as the diffusion barrier, a plasma sprayed NiCrA1Y coating as the middle layer and an aluminized top layer. The Cr-Si and aluminized layers are fabricated using pack cementation processes and the NiCrA1Y coatings are produced using the Mettech Axial III(TM) System. All of the coating processes are optimized using the methodology of Design of Experiments (DOE) and the results are analyzed using statistical method. The optimal processes are adopted to fabricate the multilayered coatings for oxidation tests. The coatings are exposed in air at 1050°C and 1150°C for 1000 hr. The results indicate that a Cr layer and a silicon-rich barrier layer have formed on the interface between the Cr-Si coating and the NiCrA1Y coating. This barrier layer not only prevents aluminum and chromium from diffusing into the substrate, but also impedes the diffusion of other elements from the substrate into the coating. The results also reveal that, for optimal oxidation resistance at 1050°C, the top layer in a multilayered coating should have at least Al/Ni ratio of one; whereas the multilayered coating with the All Ni ratio of two in the top layer exhibits the best oxidation resistance at 1150°C. The DOE methodology provides an excellent means for process optimization and the selection of oxidation test matrix, and also offers a more thorough understanding of the effects of process parameters on the coating microstructure, and the effects of layers and their interactions on the oxidation behavior of the multilayered coatings.

Multi-oxide active layer deposition using Applied Materials Pivot array coater for high-mobility metal oxide TFT

NASA Astrophysics Data System (ADS)

Park, Hyun Chan; Scheer, Evelyn; Witting, Karin; Hanika, Markus; Bender, Marcus; Hsu, Hao Chien; Yim, Dong Kil

2015-11-01

By controlling a thin indium tin oxide (ITO), indium zinc oxide interface layer between gate insulator and indium gallium zinc oxide (IGZO), the thin-film transistor (TFT) performance can reach higher mobility as conventional IGZO as well as superior stability. For large-area display application, Applied Materials static PVD array coater (Applied Materials GmbH & Co. KG, Alzenau, Germany) using rotary targets has been developed to enable uniform thin layer deposition in display industry. Unique magnet motion parameter optimization in Pivot sputtering coater is shown to provide very uniform thin ITO layer to reach TFT performance with high mobility, not only on small scale, but also on Gen8.5 (2500 × 2200 mm glass size) production system.

Research into the use of pyrolytic oxides and polymers for the fabrication of thin film high energy capacitors

NASA Technical Reports Server (NTRS)

Nevin, J. H.

1983-01-01

Construction, capacitance and dissipation factor, and electrode materials for single layer capacitors are discussed. Basic construction, phosphosilicate glass, ten layer capacitors, twenty layer capacitors, stress measurements, buffered oxide layers, and 30 layer capacitors are also discussed. Spin-on phosphosilicate glass is addressed. Polymers as dielectric materials are also considered.

Tunable Encapsulation Structure of Block Copolymer Coated Single-Walled Carbon Nanotubes in Aqueous Solution

DOE PAGES

Han, Youngkyu; Ahn, Suk-Kyun; Zhang, Zhe; ...

2015-05-15

The nano-sized and shape-tunable molecular building blocks can provide great opportunities for the fabrication of precisely controlled nanostructures. In this work, we have fabricated a molecular building block of single-walled carbon nanotubes (SWNTs) coated by PPO-PEO-PPO block copolymers whose encapsulation structure can be controlled via temperature or addition of small molecules. The structure and optical properties of SWNT-block copolymers have been investigated by small angle neutron scattering (SANS), ultraviolet-visible (UV-vis) spectroscopy, atomic force microscopy (AFM), and molecular dynamics (MD) simulation. The structure of the hydrated block copolymer layer surrounding SWNT can be controlled reversibly by varying temperature as well asmore » by irreversibly adding 5-methylsalicylic acid (5MS). Increasing hydrophobicity of the polymers with temperature and strong tendency of 5MS to interact with both block copolymers and orbitals of the SWNTs are likely to be responsible for the significant structural change of the block copolymer encapsulation layer, from loose corona shell to tightly encapsulating compact shell. These result shows an efficient and simple way to fabricate and manipulate carbon-based nano building blocks in aqueous systems with tunable structure.« less

Oxide-based materials by atomic layer deposition

NASA Astrophysics Data System (ADS)

Godlewski, Marek; Pietruszka, Rafał; Kaszewski, Jarosław; Witkowski, Bartłomiej S.; Gierałtowska, Sylwia; Wachnicki, Łukasz; Godlewski, Michał M.; Slonska, Anna; Gajewski, Zdzisław

2017-02-01

Thin films of wide band-gap oxides grown by Atomic Layer Deposition (ALD) are suitable for a range of applications. Some of these applications will be presented. First of all, ALD-grown high-k HfO2 is used as a gate oxide in the electronic devices. Moreover, ALD-grown oxides can be used in memory devices, in transparent transistors, or as elements of solar cells. Regarding photovoltaics (PV), ALD-grown thin films of Al2O3 are already used as anti-reflection layers. In addition, thin films of ZnO are tested as replacement of ITO in PV devices. New applications in organic photovoltaics, electronics and optoelectronics are also demonstrated Considering new applications, the same layers, as used in electronics, can also find applications in biology, medicine and in a food industry. This is because layers of high-k oxides show antibacterial activity, as discussed in this work.

Effect of protein adsorption on the corrosion behavior of 70Cu-30Ni alloy in artificial seawater.

PubMed

Torres Bautista, Blanca E; Carvalho, Maria L; Seyeux, Antoine; Zanna, Sandrine; Cristiani, Pierangela; Tribollet, Bernard; Marcus, Philippe; Frateur, Isabelle

2014-06-01

Copper alloys often used in cooling circuits of industrial plants can be affected by biocorrosion induced by biofilm formation. The objective of this work was to study the influence of protein adsorption, which is the first step in biofilm formation, on the electrochemical behavior of 70Cu-30Ni (wt.%) alloy in static artificial seawater and on the chemical composition of oxide layers. For that purpose, electrochemical measurements performed after 1h of immersion were combined to surface analyses. A model is proposed to analyze impedance data. In the presence of bovine serum albumin (BSA, model protein), the anodic charge transfer resistance deduced from EIS data at Ecorr is slightly higher, corresponding to lower corrosion current. Without BSA, two oxidized layers are shown by XPS and ToF-SIMS: an outer layer mainly composed of copper oxide (Cu2O redeposited layer) and an inner layer mainly composed of oxidized nickel, with a global thickness of ~30nm. The presence of BSA leads to a mixed oxide layer (CuO, Cu2O, Ni(OH)2) with a lower thickness (~10nm). Thus, the protein induces a decrease of the dissolution rate at Ecorr and hence a decrease of the amount of redeposited Cu2O and of the oxide layer thickness. © 2013.

Mode jumping of split-ring resonator metamaterials controlled by high-permittivity BST and incident electric fields

PubMed Central

Fu, Xiaojian; Zeng, Xinxi; Cui, Tie Jun; Lan, Chuwen; Guo, Yunsheng; Zhang, Hao Chi; Zhang, Qian

2016-01-01

We investigate the resonant modes of split-ring resonator (SRR) metamaterials that contain high-permittivity BST block numerically and experimentally. We observe interesting mode-jumping phenomena from the BST-included SRR absorber structure as the excitation wave is incident perpendicularly to the SRR plane. Specifically, when the electric field is parallel to the SRR gap, the BST block in the gap will induce a mode jumping from the LC resonance to plasmonic resonance (horizontal electric-dipole mode), because the displacement current excited by the Mie resonance in the dielectric block acts as a current channel in the gap. When the electric field is perpendicular to the gap side, the plasmonic resonance mode (vertical electric-dipole mode) in SRR changes to two joint modes contributed simultaneously by the back layer, SRR and BST block, as a result of connected back layer and SRR layer by the displacement current in the BST dielectric block. Based on the mode jumping effect as well as temperature and electric-field dependent dielectric constant, the BST-included SRR metamaterials may have great potentials for the applications in electromagnetic switches and widely tunable metamaterial devices. PMID:27502844

Two-layer-atmospheric blocking in a medium with high nonlinearity and lateral dispersion

NASA Astrophysics Data System (ADS)

Osman, M. S.; Abdel-Gawad, H. I.; El Mahdy, M. A.

2018-03-01

Herein, the extended coupled Kadomtsev-Petviashvili equation (CKPE) with lateral dispersion is investigated for studying the atmospheric blocking in two layers. A variety of new types of polynomial solutions for the CKPE is obtained using the unified method. Furthermore, we use the Hamiltonian systems with two degrees of freedom to discuss the stability of the obtained solutions through the bifurcation diagrams.

α-Tocopherol/Gallic Acid Cooperation in the Protection of Galactolipids Against Ozone-Induced Oxidation.

PubMed

Rudolphi-Skórska, Elżbieta; Filek, Maria; Zembala, Maria

2016-04-01

The protective ability of α-tocopherol (TOH) and gallic acid (GA) acting simultaneously at the moment of oxidizer application was evaluated by determination of galactolipid layers' oxidation degree. Addition of GA resulted in a significant decrease of ozone-derived radicals shifting the threshold of lipid sensitivity by an amount approximately corresponding to the GA intake in bulk reaction with ozone. TOH presence in lipid layers results in a change of the role of GA which additionally may be involved in the reduction of tocopheroxyl radical formed during oxidation. This leads to a decrease in effectiveness of GA in diminishing the amount of ozone radicals. Such an effect was not observed for mixed layers containing galactolipid and pre-oxidized tocopherol where the ozone threshold level was associated with a stoichiometry of GA + O3 reaction. It was concluded that probably subsequent transformations of tocopheroxyl radical to less reactive forms prevent its reaction with GA the entire quantity of which is used for radicals scavenging. This result shows the role of time parameter in systems where substrates are engaged in various reactions taking place simultaneously. The inactivation of 1,1-diphenyl-2-picrylhydrazyl radical by studied antioxidants in homogeneous system confirmed observations made on the basis of lipid layer properties indicating their antagonistic action (at least at studied conditions). Formation of layers in post-oxidation situation did not depend whether tocopherol was oxidized during oxidation of lipid/tocopherol mixture or was introduced as pre-oxidized. This may be interpreted as indication that products of tocopherol oxidation may stabilize lipid layers.

Cadmium-free junction fabrication process for CuInSe.sub.2 thin film solar cells

DOEpatents

Ramanathan, Kannan V.; Contreras, Miguel A.; Bhattacharya, Raghu N.; Keane, James; Noufi, Rommel

1999-01-01

The present invention provides an economical, simple, dry and controllable semiconductor layer junction forming process to make cadmium free high efficiency photovoltaic cells having a first layer comprised primarily of copper indium diselenide having a thin doped copper indium diselenide n-type region, generated by thermal diffusion with a group II(b) element such as zinc, and a halide, such as chlorine, and a second layer comprised of a conventional zinc oxide bilayer. A photovoltaic device according the present invention includes a first thin film layer of semiconductor material formed primarily from copper indium diselenide. Doping of the copper indium diselenide with zinc chloride is accomplished using either a zinc chloride solution or a solid zinc chloride material. Thermal diffusion of zinc chloride into the copper indium diselenide upper region creates the thin n-type copper indium diselenide surface. A second thin film layer of semiconductor material comprising zinc oxide is then applied in two layers. The first layer comprises a thin layer of high resistivity zinc oxide. The second relatively thick layer of zinc oxide is doped to exhibit low resistivity.

Organic-Inorganic Hybrid Interfacial Layer for High-Performance Planar Perovskite Solar Cells.

PubMed

Yang, Hao; Cong, Shan; Lou, Yanhui; Han, Liang; Zhao, Jie; Sun, Yinghui; Zou, Guifu

2017-09-20

4,7-Diphenyl-1,10-phenanthroline (Bphen) is an efficient electron transport and hole blocking material in organic photoelectric devices. Here, we report cesium carbonate (Cs 2 CO 3 ) doped Bphen as cathode interfacial layer in CH 3 NH 3 PbI 3-x Cl x based planar perovskite solar cells (PSCs). Investigation finds that introducing Cs 2 CO 3 suppresses the crystallization of Bphen and benefits a smooth interface contact between the perovskite and electrode, resulting in the decrease in carrier recombination and the perovskite degradation. In addition, the matching energy level of Bphen film in the PSCs effectively blocks the holes diffusion to cathode. The resultant power conversion efficiency (PCE) achieves as high as 17.03% in comparison with 12.67% of reference device without doping. Besides, experiments also demonstrate the stability of PSCs have large improvement because the suppressed crystallization of Bphen by doping Cs 2 CO 3 as a superior barrier layer blocks the Ag atom and surrounding moisture access to the vulnerable perovskite layer.

Density functional theory simulation of titanium migration and reaction with oxygen in the early stages of oxidation of equiatomic NiTi alloy.

PubMed

Nolan, Michael; Tofail, Syed A M

2010-05-01

The biocompatibility of NiTi shape memory alloys (SMA) has made possible applications in self-expandable cardio-vascular stents, stone extraction baskets, catheter guide wires and other invasive and minimally invasive biomedical devices. The NiTi intermetallic alloy spontaneously forms a thin passive layer of TiO(2), which provides its biocompatibility. The oxide layer is thought to form as the Ti in the alloy surface reacts with oxygen, resulting in a depletion of Ti in the subsurface region - experimental evidence indicates formation of a Ni-rich layer below the oxide film. In this paper, we study the initial stages of oxide growth on the (110) surface of the NiTi alloy to understand the formation of alloy/oxide interface. We initially adsorb atomic and molecular oxygen on the (110) surface and then successively add O(2) molecules, up to 2 monolayer of O(2). Oxygen adsorption always results in a large energy gain. With atomic oxygen, Ti is pulled out of the surface layer leaving behind a Ni-rich subsurface region. Molecular O(2), on the other hand adsorbs dissociatively and pulls a Ti atom farther out of the surface layer. The addition of further O(2) up to 1 monolayer is also dissociative and results in complete removal of Ti from the initial surface layer. When further O(2) is added up to 2 monolayer, Ti is pulled even further out of the surface and a single thin layer of composition O-Ti-O is formed. The electronic structure shows that the metallic character of the alloy is unaffected by interaction with oxygen and formation of the oxide layer, consistent with the oxide layer being a passivant. Copyright 2010 Elsevier Ltd. All rights reserved.

Energetics and crystal chemistry of Ruddlesden-Popper type structures in high T(sub c) ceramic superconductors

NASA Technical Reports Server (NTRS)

Dwivedi, Anurag; Cormack, A. N.

1990-01-01

The formation of Ruddlesden-Popper type layers (alternating slabs of rocksalt and perovskite structures) is seen in these oxides which is similar in many respects to what is seen in the system Sr-Ti-O. However, it was observed that there are some significant differences, for example the rocksalt and perovskite blocks in new superconducting compounds are not necessarily electrically, unlike in Sr-Ti-O systems. This will certainly render an additional coulombic bonding energy between two different types of blocks and may well lead to significant differences in their structural chemistry. In the higher order members of the various homologous series, additional Cu-O planes are inserted in the perovskite blocks. In order for the unit cell to electrically neutral the net positive charge on rocksalt block (which remains constant throughout the homologous series) should be balanced by an equal negative charge on perovskite block. It, thus becomes necessary to create oxygen vacancies in the basic perovskite structure, when width of the perovskite slab changes on addition of extra Cu-O planes. Results of atomistic simulations suggest that these missing oxygen ions allow the Cu-O planes to buckle in these compounds. This is also supported by the absence of buckling in the first member of Bi-containing compounds in which there are no missing oxygen ions and the Sr-Ti-O series of compounds. Additional results are presented on the phase stability of polytypoid structures in these crystal chemically complex systems. The studies will focus on the determination of the location of Cu(3+) in the structures of higher order members of the La-Cu-O system and whether Cu(3+) ions or oxygen vacancies are energetically more favorable charge compensating mechanism.

Investigation on Tribological Properties of the Pre-oxidized Ti2AlN/TiAl Composite

NASA Astrophysics Data System (ADS)

Wang, Daqun; Sun, Dongli; Han, Xiuli; Wang, Qing; Wang, Guangwei

2018-03-01

Different oxidation layers on the Ti2AlN/TiAl substrate which was fabricated by in situ synthesis were prepared through thermal oxidation process. The microstructure, phase identification and elements distribution of the oxidation layers were analyzed. The tribological performance of pre-oxidized composites against Si3N4 ball at 25 and 600 °C, as well as the effect of pre-oxidation layers on tribological performance was systematically investigated. The results show that, compared to Ti2AlN/TiAl, the pre-oxidized composites present more excellent tribological properties, especially the wear resistance at 600 °C. It is a significant finding that, different from severe abrasive wear and plastic deformation of Ti2AlN/TiAl, the tribo-films formed by the pre-oxidation layers on the worn surface of pre-oxidized composites weaken abrasive wear and suppress the development of plastic deformation to protect the underlying composite substrate from wear. Moreover, the stable cooperation on the interface between tribo-films and Si3N4 ball results in the relatively steady friction coefficient.

III-V compound semiconductor material characterization of microstructures and nanostructures on various optoelectronic devices with analytical transmission electron microscopy and high resolution electron microscopy

NASA Astrophysics Data System (ADS)

Zhou, Wei

Analytical Transmission Electron Microscopy (TEM) and High Resolution Electron Microscopy have been carried out to characterize microstructures and nanostructures in various III-V compound semiconductor devices by metalorganic chemical vapor deposition (MOCVD). The low-defect GaN nonplanar templates by lateral epitaxial overgrowth (LEO) has a trapezoidal cross-section with smooth (0001) and {112¯2} facets. Penetration of threading dislocations (TDs) beyond mask windows is observed in ordinary LEO substrates. In two-step LEO substrates, where TDs are engineered to bend 90° in the TD bending layer after the first LEO step, only perfect a-type dislocations with Burgers vector b = 1/3 <112¯0> are generated in the upper Post-bending layer with a density of ˜8 x 107cm-2. The demonstrated 3-dimensional dislocation spatial distribution in the LEO nonplanar substrate substantiates the dislocation reaction mechanism. Al0.07GaN/GaN superlattice can further decrease dislocations. InGaN QW thickness enhancement on top of GaN nonplanar templates has been verified to influence the optoelectronic properties significantly. Dense arrays of hexagonally ordered MOCVD-grown (In)(Ga)As nano-QDs by block copolymer nanolithography & selective area growth (SAG), approximately 20nm in diameter and 40nm apart with a density of 1011/cm 2, are perfect crystals by TEM. V-shaped defects and worse InAs growth uniformity have been observed in multiple layers of vertically coupled self-assembled InAs nanostructure arrays on strain-modulated GaAs substrates. TEM shows a smooth coalesced GaN surface with a thickness as thin as ˜200nm after Nano-LEO and a defect reduction of 70%-75%. The (In)GaAs 20 nm twist bonded compliant substrates have almost no compliant effect and higher dislocation density, but the 10nm compliant substrates are on the contrary. A 60nm oxygen-infiltrated crystallized transition layer is observed between the amorphous oxidized layer and the crystallized unoxidized aperture in Al xGa1-xAs wet lateral oxidation, potentially influencing the current confinement characteristic of the sub-micron oxide aperture. Almost no dislocation is aroused by the wet lateral oxidation of In0.52Al 0.48As in the InP microresonator waveguides. XTEM was performed to compare InP SAG regions with 10˜50mum masks, which shows the performance deterioration of laser threshold current densities in the case of 50mum mask results from high density of dislocations induced from the highly strained QW structures caused by the high enhancements.

Fabrication of graphene/polyaniline composite multilayer films by electrostatic layer-by-layer assembly

NASA Astrophysics Data System (ADS)

Cong, Jiaojiao; Chen, Yuze; Luo, Jing; Liu, Xiaoya

2014-10-01

A novel graphene/polyaniline composite multilayer film was fabricated by electrostatic interactions induced layer-by-layer self-assembly technique, using water dispersible and negatively charged chemically converted graphene (CCG) and positively charged polyaniline (PANI) as building blocks. CCG was achieved through partly reduced graphene oxide, which remained carboxyl group on its surface. The remaining carboxyl groups not only retain the dispersibility of CCG, but also allow the growth of the multilayer films via electrostatic interactions between graphene and PANI. The structure and morphology of the obtained CCG/PANI multilayer film are characterized by attenuated total reflectance Fourier transform infrared (ATR-FTIR) spectroscopy, Ultraviolet-visible absorption spectrum (UV-vis), scanning electron microscopy (SEM), Raman spectroscopy and X-Ray Diffraction (XRD). The electrochemical properties of the resulting film are studied using cyclic voltammetry (CV), which showed that the resulting CCG/PANI multilayer film kept electroactivity in neutral solution and showed outstanding cyclic stability up to 100 cycles. Furthermore, the composite film exhibited good electrocatalytic ability toward ascorbic acid (AA) with a linear response from 1×10-4 to 1.2×10-3 M with the detect limit of 5×10-6 M. This study provides a facile and effective strategy to fabricate graphene/PANI nanocomposite film with good electrochemical property, which may find potential applications in electronic devices such as electrochemical sensor.

The role of polymer films on the oxidation of magnetite nanoparticles

DOE Office of Scientific and Technical Information (OSTI.GOV)

Letti, C.J.; Paterno, L.G.; Pereira-da-Silva, M.A.

2017-02-15

A detailed investigation about the role of polymer films on the oxidation process of magnetite nanoparticles (∼7 nm diameter), under laser irradiation is performed employing micro Raman spectroscopy. To support this investigation, Fe{sub 3}O{sub 4}-np are synthesized by the co-precipitation method and assembled layer-by-layer with sodium sulfonated polystyrene (PSS). Polymer films (Fe{sub 3}O{sub 4}-np/PSS){sub n} with n=2,3,5,7,10 and 25 bilayers are employed as a model system to study the oxidation process under laser irradiation. Raman data are further processed by principal component analysis. Our findings suggest that PSS protects Fe{sub 3}O{sub 4}-np from oxidation when compared to powder samples, evenmore » for the sample with the greater number of bilayers. Further, the oxidation of magnetite to maghemite occurs preferably for thinner films up to 7 bilayers, while the onset for the formation of the hematite phase depends on the laser intensity for thicker films. Water takes part on the oxidation processes of magnetite, the oxidation/phase transformation of Fe{sub 3}O{sub 4}-np is intensified in films with more bilayers, since more water is included in those films. Encapsulation of Fe{sub 3}O{sub 4}-np by PSS in layer-by-layer films showed to be very efficient to avoid the oxidation process in nanosized magnetite. - Graphical abstract: Encapsulation of Fe{sub 3}O{sub 4}-np by PSS in layer-by-layer films avoids the oxidation and phase transformation of nanosized magnetite. - Highlights: • (Fe{sub 3}O{sub 4}-np/PSS){sub n} nanofilms, with n=2 up to 25, where layer-by-layer assembled. • The influence of film architecture on the Fe{sub 3}O{sub 4}-np oxidation was investigated through Raman spectroscopy. • Encapsulation of Fe{sub 3}O{sub 4}-np by PSS showed to be very efficient to avoid the Fe{sub 3}O{sub 4}-np oxidation.« less

Duplex aluminized coatings

NASA Technical Reports Server (NTRS)

Gedwill, M. A.; Grisaffe, S. J. (Inventor)

1975-01-01

The surface of a metallic base system is initially coated with a metallic alloy layer that is ductile and oxidation resistant. An aluminide coating is then applied to the metallic alloy layer. The chemistry of the metallic alloy layer is such that the oxidation resistance of the subsequently aluminized outermost layer is not seriously degraded.

Corrosion behavior of oxide dispersion strengthened ferritic steels in supercritical water

NASA Astrophysics Data System (ADS)

Gao, Wenhua; Guo, Xianglong; Shen, Zhao; Zhang, Lefu

2017-04-01

The corrosion resistance of three different Cr content oxide dispersion strengthened (ODS) ferritic steels in supercritical water (SCW) and their passive films formed on the surface have been investigated. The results show that the dissolved oxygen (DO) and chemical composition have significant influence on the corrosion behavior of the ODS ferritic steels. In 2000 ppb DO SCW at 650 °C, the 14Cr-4Al ODS steel forms a tri-layer oxide film and the surface morphologies have experienced four structures. For the tri-layer oxide film, the middle layer is mainly Fe-Cr spinel and the Al is gradually enriched in the inner layer.

Polystyrene-block-poly(ethylene oxide) copolymers as templates for stacked, spherical large-mesopore silica coatings: dependence of silica pore size on the PS/PEO ratio

PubMed Central

Magnacca, Giuliana; Jadhav, Sushilkumar A; Scalarone, Dominique

2016-01-01

Summary Large-mesopore silica films with a narrow pore size distribution and high porosity have been obtained by a sol–gel reaction of a silicon oxide precursor (TEOS) and using polystyrene-block-poly(ethylene oxide) (PS-b-PEO) copolymers as templates in an acidic environment. PS-b-PEO copolymers with different molecular weight and composition have been studied in order to assess the effects of the block length on the pore size of the templated silica films. The changes in the morphology of the porous systems have been investigated by transmission electron microscopy and a systematic analysis has been carried out, evidencing the dependence between the hydrophilic/hydrophobic ratio of the two polymer blocks and the size of the final silica pores. The obtained results prove that by tuning the PS/PEO ratio, the pore size of the templated silica films can be easily and finely predicted. PMID:27826520

Superconductive articles including cerium oxide layer

DOEpatents

Wu, X.D.; Muenchausen, R.E.

1993-11-16

A ceramic superconductor comprising a metal oxide substrate, a ceramic high temperature superconductive material, and a intermediate layer of a material having a cubic crystal structure, said layer situated between the substrate and the superconductive material is provided, and a structure for supporting a ceramic superconducting material is provided, said structure comprising a metal oxide substrate, and a layer situated over the surface of the substrate to substantially inhibit interdiffusion between the substrate and a ceramic superconducting material deposited upon said structure. 7 figures.

Superconductive articles including cerium oxide layer

DOEpatents

Wu, Xin D.; Muenchausen, Ross E.

1993-01-01

A ceramic superconductor comprising a metal oxide substrate, a ceramic high temperature superconductive material, and a intermediate layer of a material having a cubic crystal structure, said layer situated between the substrate and the superconductive material is provided, and a structure for supporting a ceramic superconducting material is provided, said structure comprising a metal oxide substrate, and a layer situated over the surface of the substrate to substantially inhibit interdiffusion between the substrate and a ceramic superconducting material deposited upon said structure.

In-situ formation of multiphase deposited thermal barrier coatings

DOEpatents

Subramanian, Ramesh

2004-01-13

A multiphase ceramic thermal barrier coating is provided. The coating is adapted for use in high temperature applications in excess of about 1200.degree. C., for coating superalloy components of a combustion turbine engine. The coating comprises a ceramic single or two oxide base layer disposed on the substrate surface; and a ceramic oxide reaction product material disposed on the base layer, the reaction product comprising the reaction product of the base layer with a ceramic single or two oxide overlay layer.

Blocking, descent and gravity waves: Observations and modelling of a MAP northerly föhn event

NASA Astrophysics Data System (ADS)

Jiang, Qingfang; Doyle, James D.; Smith, Ronald B.

2005-01-01

A northerly föhn event observed during the special observational period of the Mesoscale Alpine Programme is investigated based on observational analysis and numerical modelling. The focus of this study includes three dynamical processes associated with mountain perturbations and their interactions, namely, windward flow blocking, descent and warming on the lee side, and mountain waves. Observations indicate the presence of a deep weak-flow layer underneath a stable layer, associated with Alpine-scale blocking. Satellite imagery reveals a föhninduced cloud-free area to the south of the Alps, which is consistent with flow descent diagnosed from radiosondes and constant-volume balloons. Moderate-amplitude stationary waves were observed by research aircraft over the major Alpine peaks. Satellite images and balloon data indicate the presence of stationary trapped-wave patterns located to the north of the Alpine massif.Satisfactory agreement is found between observations and a real-data COAMPS simulation nested to 1 km resolution. COAMPS indicates the presence of trapped waves associated with a sharp decrease of Scorer parameter above a stable layer in the mid-troposphere. Underneath the stable layer, moist low-level flow is blocked to the north of the Alps. The warm air in the stable layer descends in the lee and recovers its altitude over a relatively short horizontal distance through a hydraulic jump.Blocking reduces the effective mountain and hence significantly reduces mountain drag. A simple empirical formula for estimation of the effective mountain height, he, is derived based on numerical simulations. The formula states he/hc = (h/hc), where h is the real mountain height and hc is the critical mountain height to have flow stagnation.

Use of chemical mechanical polishing in micromachining

DOEpatents

Nasby, Robert D.; Hetherington, Dale L.; Sniegowski, Jeffry J.; McWhorter, Paul J.; Apblett, Christopher A.

1998-01-01

A process for removing topography effects during fabrication of micromachines. A sacrificial oxide layer is deposited over a level containing functional elements with etched valleys between the elements such that the sacrificial layer has sufficient thickness to fill the valleys and extend in thickness upwards to the extent that the lowest point on the upper surface of the oxide layer is at least as high as the top surface of the functional elements in the covered level. The sacrificial oxide layer is then polished down and planarized by chemical-mechanical polishing. Another layer of functional elements is then formed upon this new planarized surface.