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Sample records for boron doped graphite

  1. Comparison of beryllium oxide and pyrolytic graphite crucibles for boron doped silicon epitaxy

    SciTech Connect

    Ali, Dyan; Richardson, Christopher J. K.

    2012-11-15

    This article reports on the comparison of beryllium oxide and pyrolytic graphite as crucible liners in a high-temperature effusion cell used for boron doping in silicon grown by molecular beam epitaxy. Secondary ion mass spectroscopy analysis indicates decomposition of the beryllium oxide liner, leading to significant incorporation of beryllium and oxygen in the grown films. The resulting films are of poor crystal quality with rough surfaces and broad x-ray diffraction peaks. Alternatively, the use of pyrolytic graphite crucible liners results in higher quality films.

  2. Density functional theory investigation of oxygen interaction with boron-doped graphite

    NASA Astrophysics Data System (ADS)

    Liu, Juan; Wang, Chen; Liang, Tongxiang; Lai, Wensheng

    2016-12-01

    Boron inserted as impurity by substitution of carbon atoms in graphite is known to change (improve or deteriorate) oxidation resistance of nuclear graphite, but the reason for both catalytic and inhibiting oxidation is still uncertain. As a first step, this work is more specially devoted to the adsorption and diffusion of oxygen atoms on the surface and related to the problem of oxygen retention on the pure and boron-containing graphite surfaces. Adsorption energies and energy barriers associated to the diffusion for molecular oxygen recombination are calculated in the density functional theory framework. The existence of boron modifies the electronic structure of the surface, which results in an increase of the adsorption energy for O. However, low boron loading makes it easier for the recombination into molecular oxygen. For high boron concentration, it induces a better O retention capability in graphite because the presence of B-B bonds decreases recombination of the adsorbed oxygen atoms. A possible explanation for both catalytic and inhibiting effects of boron in graphite is proposed.

  3. Interaction of boron with graphite: A van der Waals density functional study

    NASA Astrophysics Data System (ADS)

    Liu, Juan; Wang, Chen; Liang, Tongxiang; Lai, Wensheng

    2016-08-01

    Boron doping has been widely investigated to improve oxidation resistance of graphite. In this work the interaction of boron with graphite is investigated by a van der Waals density-functional approach (vdW-DF). The traditional density-functional theory (DFT) is well accounted for the binding in boron-substituted graphite. However, to investigate the boron atom on graphite surface and the interstitial impurities require use of a description of graphite interlayer binding. Traditional DFT cannot describe the vdW physics, for instance, GGA calculations show no relevant binding between graphite sheets. LDA shows some binding, but they fail to provide an accurate account of vdW forces. In this paper, we compare the calculation results of graphite lattice constant and cohesive energy by several functionals, it shows that vdW-DF such as two optimized functionals optB88-vdW and optB86b-vdW give much improved results than traditional DFT. The vdW-DF approach is then applied to study the interaction of boron with graphite. Boron adsorption, substitution, and intercalation are discussed in terms of structural parameters and electronic structures. When adsorbing on graphite surface, boron behaves as π electron acceptor. The π electron approaches boron atom because of more electropositive of boron than carbon. For substitution situation, the hole introduced by boron mainly concentrates on boron and the nearest three carbon atoms. The B-doped graphite system with the hole has less ability to offer electrons to oxygen, ultimately resulted in the inhibition of carbon oxidation. For interstitial doping, vdW-DFs show more accurate formation energy than LDA. PBE functional cannot describe the interstitial boron in graphite reasonably because of the ignoring binding of graphite sheets. The investigation of electron structures of boron doped graphite will play an important role in understanding the oxidation mechanism in further study.

  4. Boron doping a semiconductor particle

    DOEpatents

    Stevens, Gary Don; Reynolds, Jeffrey Scott; Brown, Louanne Kay

    1998-06-09

    A method (10,30) of boron doping a semiconductor particle using boric acid to obtain a p-type doped particle. Either silicon spheres or silicon powder is mixed with a diluted solution of boric acid having a predetermined concentration. The spheres are dried (16), with the boron film then being driven (18) into the sphere. A melt procedure mixes the driven boron uniformly throughout the sphere. In the case of silicon powder, the powder is metered out (38) into piles and melted/fused (40) with an optical furnace. Both processes obtain a p-type doped silicon sphere with desired resistivity. Boric acid is not a restricted chemical, is inexpensive, and does not pose any special shipping, handling, or disposal requirements.

  5. Boron doping a semiconductor particle

    DOEpatents

    Stevens, G.D.; Reynolds, J.S.; Brown, L.K.

    1998-06-09

    A method of boron doping a semiconductor particle using boric acid to obtain a p-type doped particle. Either silicon spheres or silicon powder is mixed with a diluted solution of boric acid having a predetermined concentration. The spheres are dried, with the boron film then being driven into the sphere. A melt procedure mixes the driven boron uniformly throughout the sphere. In the case of silicon powder, the powder is metered out into piles and melted/fused with an optical furnace. Both processes obtain a p-type doped silicon sphere with desired resistivity. Boric acid is not a restricted chemical, is inexpensive, and does not pose any special shipping, handling, or disposal requirements. 2 figs.

  6. Ultratough single crystal boron-doped diamond

    DOEpatents

    Hemley, Russell J [Carnegie Inst. for Science, Washington, DC ; Mao, Ho-Kwang [Carnegie Inst. for Science, Washington, DC ; Yan, Chih-Shiue [Carnegie Inst. for Science, Washington, DC ; Liang, Qi [Carnegie Inst. for Science, Washington, DC

    2015-05-05

    The invention relates to a single crystal boron doped CVD diamond that has a toughness of at least about 22 MPa m.sup.1/2. The invention further relates to a method of manufacturing single crystal boron doped CVD diamond. The growth rate of the diamond can be from about 20-100 .mu.m/h.

  7. Method for wetting a boron alloy to graphite

    DOEpatents

    Storms, E.K.

    1987-08-21

    A method is provided for wetting a graphite substrate and spreading a a boron alloy over the substrate. The wetted substrate may be in the form of a needle for an effective ion emission source. The method may also be used to wet a graphite substrate for subsequent joining with another graphite substrate or other metal, or to form a protective coating over a graphite substrate. A noneutectic alloy of boron is formed with a metal selected from the group consisting of nickel (Ni), palladium (Pd), and platinum (Pt) with excess boron, i.e., and atomic percentage of boron effective to precipitate boron at a wetting temperature of less than the liquid-phase boundary temperature of the alloy. The alloy is applied to the substrate and the graphite substrate is then heated to the wetting temperature and maintained at the wetting temperature for a time effective for the alloy to wet and spread over the substrate. The excess boron is evenly dispersed in the alloy and is readily available to promote the wetting and spreading action of the alloy. 1 fig.

  8. Characterisation of graphite using boron as a marker element

    SciTech Connect

    Kamble, Granthali S.; Pandey, Shailaja; Thakur, Neha; Kumar, Sanjukta A.; Venkatesh, K.; Kumar, Sangita D.; Kameswaran, R.; Reddy, A. V. R.

    2013-06-12

    Graphite has many industrial applications. Two of the most important applications are as electrodes in industries and as moderator in nuclear industry. Determination of the Boron Equivalent of the impurity elements in graphite is the most important parameter for certifying the grade of graphite electrode [1]. The use of a suitable method with low limits of determination of boron is therefore necessary. A method has been standardised in Analytical Chemistry Division, BARC for determining trace amounts of boron in graphite electrodes. It involves controlled dissolution of graphite sample powder and measurement of boron by Inductively Coupled Plasma Mass Spectrometer (ICP-MS) using matrix matched standards. The method detection limit is 1 {mu}g g{sup -1}. The method Relative Standard Deviation was 5%. The method was verified by spike recovery experiments. Recoveries were found to be within 100{+-}2% in the concentration range of 1 to 100 {mu}g g{sup -1}. The developed method has been adopted for the compositional characterization of several graphite electrode samples.

  9. Characterisation of graphite using boron as a marker element

    NASA Astrophysics Data System (ADS)

    Kamble, Granthali S.; Pandey, Shailaja; Thakur, Neha; Kumar, Sanjukta A.; Venkatesh, K.; Kumar, Sangita D.; Kameswaran, R.; Reddy, A. V. R.

    2013-06-01

    Graphite has many industrial applications. Two of the most important applications are as electrodes in industries and as moderator in nuclear industry. Determination of the Boron Equivalent of the impurity elements in graphite is the most important parameter for certifying the grade of graphite electrode [1]. The use of a suitable method with low limits of determination of boron is therefore necessary. A method has been standardised in Analytical Chemistry Division, BARC for determining trace amounts of boron in graphite electrodes. It involves controlled dissolution of graphite sample powder and measurement of boron by Inductively Coupled Plasma Mass Spectrometer (ICP-MS) using matrix matched standards. The method detection limit is 1 μg g-1. The method Relative Standard Deviation was 5%. The method was verified by spike recovery experiments. Recoveries were found to be within 100±2% in the concentration range of 1 to 100 μg g-1. The developed method has been adopted for the compositional characterization of several graphite electrode samples.

  10. Thermal diffusion boron doping of single-crystal natural diamond

    NASA Astrophysics Data System (ADS)

    Seo, Jung-Hun; Wu, Henry; Mikael, Solomon; Mi, Hongyi; Blanchard, James P.; Venkataramanan, Giri; Zhou, Weidong; Gong, Shaoqin; Morgan, Dane; Ma, Zhenqiang

    2016-05-01

    With the best overall electronic and thermal properties, single crystal diamond (SCD) is the extreme wide bandgap material that is expected to revolutionize power electronics and radio-frequency electronics in the future. However, turning SCD into useful semiconductors requires overcoming doping challenges, as conventional substitutional doping techniques, such as thermal diffusion and ion implantation, are not easily applicable to SCD. Here we report a simple and easily accessible doping strategy demonstrating that electrically activated, substitutional doping in SCD without inducing graphitization transition or lattice damage can be readily realized with thermal diffusion at relatively low temperatures by using heavily doped Si nanomembranes as a unique dopant carrying medium. Atomistic simulations elucidate a vacancy exchange boron doping mechanism that occurs at the bonded interface between Si and diamond. We further demonstrate selectively doped high voltage diodes and half-wave rectifier circuits using such doped SCD. Our new doping strategy has established a reachable path toward using SCDs for future high voltage power conversion systems and for other novel diamond based electronic devices. The novel doping mechanism may find its critical use in other wide bandgap semiconductors.

  11. Recombination Activity of Iron in Boron Doped Silicon

    NASA Astrophysics Data System (ADS)

    Yli-Koski, M.; Palokangas, M.; Sokolov, V.; Storgårds, J.; Väinölä, H.; Holmberg, H.; Sinkkonen, J.

    The charge carrier lifetime in iron contaminated boron doped silicon wafers was determined by surface photovoltage, SPV, and microwave photoconductive decay, µPCD, techniques. Our results show that the charge carrier lifetime in boron doped silicon wafers depends on the boron concentration when the lifetime is limited by iron-boron pairs.

  12. Structure and functionality of bromine doped graphite.

    PubMed

    Hamdan, Rashid; Kemper, A F; Cao, Chao; Cheng, H P

    2013-04-28

    First-principles calculations are used to study the enhanced in-plane conductivity observed experimentally in Br-doped graphite, and to study the effect of external stress on the structure and functionality of such systems. The model used in the numerical calculations is that of stage two doped graphite. The band structure near the Fermi surface of the doped systems with different bromine concentrations is compared to that of pure graphite, and the charge transfer between carbon and bromine atoms is analyzed to understand the conductivity change along different high symmetry directions. Our calculations show that, for large interlayer separation between doped graphite layers, bromine is stable in the molecular form (Br2). However, with increased compression (decreased layer-layer separation) Br2 molecules tend to dissociate. While in both forms, bromine is an electron acceptor. The charge exchange between the graphite layers and Br atoms is higher than that with Br2 molecules. Electron transfer to the Br atoms increases the number of hole carriers in the graphite sheets, resulting in an increase of conductivity.

  13. Structure and functionality of bromine doped graphite

    SciTech Connect

    Hamdan, Rashid; Kemper, A. F.; Cao Chao; Cheng, H. P.

    2013-04-28

    First-principles calculations are used to study the enhanced in-plane conductivity observed experimentally in Br-doped graphite, and to study the effect of external stress on the structure and functionality of such systems. The model used in the numerical calculations is that of stage two doped graphite. The band structure near the Fermi surface of the doped systems with different bromine concentrations is compared to that of pure graphite, and the charge transfer between carbon and bromine atoms is analyzed to understand the conductivity change along different high symmetry directions. Our calculations show that, for large interlayer separation between doped graphite layers, bromine is stable in the molecular form (Br{sub 2}). However, with increased compression (decreased layer-layer separation) Br{sub 2} molecules tend to dissociate. While in both forms, bromine is an electron acceptor. The charge exchange between the graphite layers and Br atoms is higher than that with Br{sub 2} molecules. Electron transfer to the Br atoms increases the number of hole carriers in the graphite sheets, resulting in an increase of conductivity.

  14. Local atomic and electronic structure of boron chemical doping in monolayer graphene.

    PubMed

    Zhao, Liuyan; Levendorf, Mark; Goncher, Scott; Schiros, Theanne; Pálová, Lucia; Zabet-Khosousi, Amir; Rim, Kwang Taeg; Gutiérrez, Christopher; Nordlund, Dennis; Jaye, Cherno; Hybertsen, Mark; Reichman, David; Flynn, George W; Park, Jiwoong; Pasupathy, Abhay N

    2013-10-09

    We use scanning tunneling microscopy and X-ray spectroscopy to characterize the atomic and electronic structure of boron-doped and nitrogen-doped graphene created by chemical vapor deposition on copper substrates. Microscopic measurements show that boron, like nitrogen, incorporates into the carbon lattice primarily in the graphitic form and contributes ~0.5 carriers into the graphene sheet per dopant. Density functional theory calculations indicate that boron dopants interact strongly with the underlying copper substrate while nitrogen dopants do not. The local bonding differences between graphitic boron and nitrogen dopants lead to large scale differences in dopant distribution. The distribution of dopants is observed to be completely random in the case of boron, while nitrogen displays strong sublattice clustering. Structurally, nitrogen-doped graphene is relatively defect-free while boron-doped graphene films show a large number of Stone-Wales defects. These defects create local electronic resonances and cause electronic scattering, but do not electronically dope the graphene film.

  15. Graphite-boron composite heater in a Kawai-type apparatus: the inhibitory effect of boron oxide and countermeasures

    NASA Astrophysics Data System (ADS)

    Xie, Longjian; Yoneda, Akira; Yoshino, Takashi; Fei, Hongzhan; Ito, Eiji

    2016-04-01

    We have investigated the performance of a graphite-boron composite (GBC) with 3 wt % boron as a precursor for a boron-doped diamond heater in a Kawai-type apparatus at 15 GPa. We first tested a machinable cylinder of GBC sintered at 1000°C in Ar/H2 gas (99:1 molar ratio). Boron oxide (B2O3) formed during sintering frequently hindered the GBC heater from stable operation at temperatures higher than 1400°C by producing melt throughout the heater together with oxide and/or silicates. We then rinsed the GBC heater in hydrochloric acid to remove B2O3. After rinsing, we succeeded in stably generating temperatures higher than 2000°C. We also improved a molding process of different-sized GBC tubes for convenient use and tested the molded GBC heater. It was free from the B2O3 problem. The electromotive force of the W/Re thermocouple was successfully monitored up to 2400°C.

  16. Structural analysis of the B-doped mesophase pitch-based graphite fibers by Raman spectroscopy

    NASA Astrophysics Data System (ADS)

    Endo, M.; Kim, C.; Karaki, T.; Tamaki, T.; Nishimura, Y.; Matthews, M. J.; Brown, S. D. M.; Dresselhaus, M. S.

    1998-10-01

    Milled B-doped mesophase pitch-based carbon fibers (mMPCF's) prepared from a melt-blown petroleum mesophase pitch precursor material have been developed for enhanced Li uptake capacity in Li ion batteries. Raman spectroscopy has been used to investigate the structure of graphitized and B-doped mMPCF's using 632.8-nm HeNe laser excitation. The B-doped mMPCF's show a strong Raman peak near 1330 cm-1, a well-defined peak at 1620 cm-1, and the disappearance of the second-order 2660 cm-1 band. Furthermore, it is shown that the E2g2 graphite Raman band at 1580 cm-1 is shifted to 1590 cm-1 due to B doping. The appearance of a new weak Raman band in the B-doped mMPCF's near 1320 cm-1 is closely related to the B-C stretching mode in the graphite lattice. These results are associated with the breakdown of the k=0 selection rules by a local distortion of the graphite lattice due to substitutional boron doping. On the basis of the integrated intensity ratio R of the disorder-induced line near 1330 cm-1 to the Raman line near 1590 cm-1 after 2.66 at. % boron doping, it is suggested that the substitutional boron in the mMPCF's is homogeneously distributed within the graphene layer in the fiber form. The crystallite domain size La parallel and perpendicular to the fiber axis on the surface of the fiber is estimated to be about 60 Å, which could correspond to the distance between boron atoms substituted for C atoms in a graphene layer of the fibers.

  17. Plasmonic Properties of Silicon Nanocrystals Doped with Boron and Phosphorus.

    PubMed

    Kramer, Nicolaas J; Schramke, Katelyn S; Kortshagen, Uwe R

    2015-08-12

    Degenerately doped silicon nanocrystals are appealing plasmonic materials due to silicon's low cost and low toxicity. While surface plasmonic resonances of boron-doped and phosphorus-doped silicon nanocrystals were recently observed, there currently is poor understanding of the effect of surface conditions on their plasmonic behavior. Here, we demonstrate that phosphorus-doped silicon nanocrystals exhibit a plasmon resonance immediately after their synthesis but may lose their plasmonic response with oxidation. In contrast, boron-doped nanocrystals initially do not exhibit plasmonic response but become plasmonically active through postsynthesis oxidation or annealing. We interpret these results in terms of substitutional doping being the dominant doping mechanism for phosphorus-doped silicon nanocrystals, with oxidation-induced defects trapping free electrons. The behavior of boron-doped silicon nanocrystals is more consistent with a strong contribution of surface doping. Importantly, boron-doped silicon nanocrystals exhibit air-stable plasmonic behavior over periods of more than a year.

  18. First Principles Atomistic Model for Carbon-Doped Boron Suboxide

    DTIC Science & Technology

    2014-09-01

    First Principles Atomistic Model for Carbon-Doped Boron Suboxide by Amol B Rahane, Jennifer S Dunn, and Vijay Kumar ARL-TR-7106...2014 First Principles Atomistic Model for Carbon-Doped Boron Suboxide Amol B Rahane Dr Vijay Kumar Foundation 1969 Sector 4 Gurgaon...Final 3. DATES COVERED (From - To) October 2013–July 2014 4. TITLE AND SUBTITLE First Principles Atomistic Model for Carbon-Doped Boron Suboxide

  19. Energetics of Boron Doping of Carbon Pores

    NASA Astrophysics Data System (ADS)

    Wexler, Carlos; St. John, Alexander; Connolly, Matthew

    2014-03-01

    Carbon-based materials show promise, given their light weight, large surface areas and low cost for storage of hydrogen and other gases, e.g., for energy applications. Alas, the interaction of H2 and carbon, 4-5kJ/mol, is insufficient for room-temperature operation. Boron doping of carbon materials could raise the binding energy of H2 to 12-15kJ/mol. The nature of the incorporation of boron into a carbon structure has not been studied so far. In this talk we will address the energetics of boron incorporation into a carbon matrix via adsorption and decomposition of decaborane by first principles calculations. These demonstrate: (a) A strong adsorption of decaborane to carbon (70-80kJ/mol) resulting in easy incorporation of decaborane, sufficient for up to 10-20% B:C at low decaborane vapour pressures. (b) Identification that boron acts as an electron acceptor when incorporated substitutionally into a graphene-like material, as expected due to its valence. (c) The electrostatic field near the molecule is responsible for ca. 2/3 of the enhancement of the H2-adsorbent interaction in aromatic compounds such as pyrene, coronene and ovalene. Supported by DOE DE-FG36-08GO18142, ACS-PRF 52696-ND5, and NSF 1069091.

  20. Piezoresistive boron doped diamond nanowire

    DOEpatents

    Sumant, Anirudha V.; Wang, Xinpeng

    2016-09-13

    A UNCD nanowire comprises a first end electrically coupled to a first contact pad which is disposed on a substrate. A second end is electrically coupled to a second contact pad also disposed on the substrate. The UNCD nanowire is doped with a dopant and disposed over the substrate. The UNCD nanowire is movable between a first configuration in which no force is exerted on the UNCD nanowire and a second configuration in which the UNCD nanowire bends about the first end and the second end in response to a force. The UNCD nanowire has a first resistance in the first configuration and a second resistance in the second configuration which is different from the first resistance. The UNCD nanowire is structured to have a gauge factor of at least about 70, for example, in the range of about 70 to about 1,800.

  1. Conductivity of boron-doped polycrystalline diamond films: influence of specific boron defects

    NASA Astrophysics Data System (ADS)

    Ashcheulov, P.; Šebera, J.; Kovalenko, A.; Petrák, V.; Fendrych, F.; Nesládek, M.; Taylor, A.; Vlčková Živcová, Z.; Frank, O.; Kavan, L.; Dračínský, M.; Hubík, P.; Vacík, J.; Kraus, I.; Kratochvílová, I.

    2013-10-01

    The resistivity of boron doped polycrystalline diamond films changes with boron content in a very complex way with many unclear factors. From the large number of parameters affecting boron doped polycrystalline diamond film's conductivity we focused on the role of boron atoms inside diamond grains in terms of boron contribution to the continuum of diamond electronic states. Using a combination of theoretical and experimental techniques (plane-wave Density Functional Theory, Neutron Depth Profiling, resistivity and Hall effect measurements, Atomic Force Microscopy and Raman spectroscopy) we studied a wide range of B defect parameters - the boron concentration, location, structure, free hole concentration and mobility. The main goal and novelty of our work was to find the influence of B defects (structure, interactions, charge localisation and spins) in highly B-doped diamonds - close or above the metal-insulator transition - on the complex material charge transport mechanisms.

  2. Green synthesis of boron doped graphene and its application as high performance anode material in Li ion battery

    SciTech Connect

    Sahoo, Madhumita; Sreena, K.P.; Vinayan, B.P.; Ramaprabhu, S.

    2015-01-15

    Graphical abstract: Boron doped graphene (B-G), synthesized by simple hydrogen induced reduction technique using boric acid as boron precursor, have more uneven surface as a result of smaller bonding distance of boron compared to carbon, showed high capacity and high rate capability compared to pristine graphene as an anode material for Li ion battery application. - Abstract: The present work demonstrates a facile route for the large-scale, catalyst free, and green synthesis approach of boron doped graphene (B-G) and its use as high performance anode material for Li ion battery (LIB) application. Boron atoms were doped into graphene framework with an atomic percentage of 5.93% via hydrogen induced thermal reduction technique using graphite oxide and boric acid as precursors. Various characterization techniques were used to confirm the boron doping in graphene sheets. B-G as anode material shows a discharge capacity of 548 mAh g{sup −1} at 100 mA g{sup −1} after 30th cycles. At high current density value of 1 A g{sup −1}, B-G as anode material enhances the specific capacity by about 1.7 times compared to pristine graphene. The present study shows a simplistic way of boron doping in graphene leading to an enhanced Li ion adsorption due to the change in electronic states.

  3. Boron-doped nanodiamonds as possible agents for local hyperthermia

    NASA Astrophysics Data System (ADS)

    Vervald, A. M.; Burikov, S. A.; Vlasov, I. I.; Ekimov, E. A.; Shenderova, O. A.; Dolenko, T. A.

    2017-04-01

    In this work, the effective heating of surrounding water by heavily-boron-doped nanodiamonds (NDs) under laser irradiation of visible wavelength was found. Using Raman scattering spectroscopy of aqueous suspensions of boron-doped NDs, it was found that this abnormally high heating results in the weakening of hydrogen bonds much more so (2–5 times stronger) than for undoped NDs. The property of boron-doped NDs to heat a solvent under the influence of laser radiation (1–5 W cm‑2) opens broad prospects for their use to create nanoagents for medical oncology and local hyperthermia.

  4. Doping of graphene induced by boron/silicon substrate.

    PubMed

    Dianat, Arezoo; Liao, Zhongquan; Gall, Martin; Zhang, Tao; Gutierrez, Rafael; Zschech, Ehrenfried; Cuniberti, Gianaurelio

    2017-04-12

    In this work, we show the doping of graphene most likely from heteroatoms induced by the substrate using Raman spectrum, X-ray photoelectron spectroscopy (XPS), energy dispersive X-ray spectroscopy (EDX) and ab initio molecular dynamics simulations. The doping of graphene on a highly boron-doped silicon substrate was achieved by an annealing at 400 K for about 3 hours in an oven with air flow. With the same annealing, only the Raman features similar to that from the pristine graphene were observed in the freestanding graphene and the graphene on a typical Si/SiO2 wafer. Ab initio molecular dynamics (MD) simulations were performed for defected graphene on boron-doped silicon substrate at several temperatures. All vacancy sites in the graphene are occupied either with B atoms or Si atoms resulting in the mixed boron-silicon doping of the graphene. The MD simulations validated the experimetal finding of graphene doped behaviour observed by Raman spectrum. The electronic structure analysis indicated the p-type nature of doped graphene. The observed doping by the possible incorporation of heteroatoms into the graphene, simply only using 400 K annealing the boron-doped Si substrate, could provide a new approach to synthesize doped graphene in a more economic way.

  5. Characteristics of deposited boron doping diamond on tungsten carbide insert by MPECVD

    NASA Astrophysics Data System (ADS)

    Kim, Jong Seok; Park, Yeong Min; Kim, Jeong Wan; Tulugan, Kelimu; Kim, Tae Gyu

    2015-03-01

    Diamond-coated cutting tools are used primarily for machining non-ferrous materials such as aluminum-silicon alloys, copper alloys, fiber-reinforced polymers, green ceramics and graphite. Because the tool life of cemented carbide cutting tool is greatly improved by diamond coating, and typically more than 10 times of the tool life is obtained. However, research of boron-doped diamond (BDD) coating tool has not been fully researched yet. In this study, we have succeeded to make boron-doped microcrystalline and nanocrystalline diamond-coated Co-cemented tungsten carbide (WC-Co) inserts. Microcrystalline BDD thin film is deposited on WC-Co insert by using microwave plasma enhanced chemical vapor deposition (MPECVD) method. Scanning electron microscope (SEM) and Raman spectroscopy are used to characterize the as-deposited diamond films.1,2

  6. Boron-doped diamond synthesized at high-pressure and high-temperature with metal catalyst

    NASA Astrophysics Data System (ADS)

    Shakhov, Fedor M.; Abyzov, Andrey M.; Kidalov, Sergey V.; Krasilin, Andrei A.; Lähderanta, Erkki; Lebedev, Vasiliy T.; Shamshur, Dmitriy V.; Takai, Kazuyuki

    2017-04-01

    The boron-doped diamond (BDD) powder consisting of 40-100 μm particles was synthesized at 5 GPa and 1500-1600 °C from a mixture of 50 wt% graphite and 50 wt% Ni-Mn catalyst with an addition of 1 wt% or 5 wt% boron powder. The size of crystal domains of doped and non-doped diamond was evaluated as a coherent scattering region by X-ray diffraction (XRD) and using small-angle neutron scattering (SANS), being ≥180 nm (XRD) and 100 nm (SANS). Magnetic impurities of NiMnx originating from the catalyst in the synthesis, which prevent superconductivity, were detected by magnetization measurements at 2-300 K. X-ray photoelectron spectroscopy, the temperature dependence of the resistivity, XRD, and Raman spectroscopy reveal that the concentration of electrically active boron is as high as (2±1)×1020 cm-3 (0.1 at%). To the best of our knowledge, this is the highest boron content for BDD synthesized in high-pressure high-temperature process with metal catalysts.

  7. Boron-doped few-walled carbon nanotubes: novel synthesis and properties

    NASA Astrophysics Data System (ADS)

    Preston, Colin; Song, Da; Taillon, Josh; Cumings, John; Hu, Liangbing

    2016-11-01

    Few-walled carbon nanotubes offer a unique marriage of graphitic quality and robustness to ink-processing; however, doping procedures that may alter the band structure of these few-walled nanotubes are still lacking. This report introduces a novel solution-injected chemical vapor deposition growth process to fabricate the first boron-doped few-walled carbon nanotubes (B-FWNTs) reported in literature, which may have extensive applications in battery devices. A comprehensive characterization of the as-grown B-FWNTs confirms successful boron substitution in the graphitic lattice, and reveals varying growth parameters impact the structural properties of B-FWNT yield. An investigation into the optimal growth purification parameters and ink-making procedures was also conducted. This study introduces the first process technique to successfully grow intrinsically p-doped FWNTs, and provides the first investigation into the impact factors of the growth parameters, purification steps, and ink-making processes on the structural properties of the B-FWNTs and the electrical properties of the resulting spray-coated thin-film electrodes.

  8. Pairwise cobalt doping of boron carbides with cobaltocene

    SciTech Connect

    Ignatov, A. Yu.; Losovyj, Ya. B.; Carlson, L.; LaGraffe, D.; Brand, J. I.; Dowben, P. A.

    2007-10-15

    We have performed Co K-edge x-ray absorption fine structure and x-ray absorption near edge structure measurements of Co-doped plasma enhanced chemical vapor phase deposition (PECVD) grown 'C{sub 2}B{sub 10}H{sub x}' semiconducting boron carbides, using cobaltocene. Cobalt does not dope PECVD grown boron carbides as a random fragment of the cobaltocene source gas. The Co atoms are fivefold boron coordinated (R=2.10{+-}0.02 A) and are chemically bonded to the icosahedral cages of B{sub 10}CH{sub x} or B{sub 9}C{sub 2}H{sub y}. Pairwise Co doping occurs, with the cobalt atoms favoring sites some 5.28{+-}0.02 A apart.

  9. Bosonic Anomalies in Boron-Doped Polycrystalline Diamond

    NASA Astrophysics Data System (ADS)

    Zhang, Gufei; Samuely, Tomas; Kačmarčík, Jozef; Ekimov, Evgeny A.; Li, Jun; Vanacken, Johan; Szabó, Pavol; Huang, Junwei; Pereira, Paulo J.; Cerbu, Dorin; Moshchalkov, Victor V.

    2016-12-01

    Quantum confinement and coherence effects are considered the cause of many specific features for systems which are generally low dimensional, strongly disordered, and/or situated in the vicinity of the metal-insulator transition. Here, we report on the observation of anomalous resistance peak and specific heat peaks superimposed at the superconducting transition of heavily boron-doped polycrystalline bulk diamond, which is a three-dimensional system situated deep on the metallic side of the boron-doping-driven metal-insulator transition in diamond. The anomalous resistance peak and specific heat peaks are interpreted as a result of confinement and coherence effects in the presence of intrinsic and extrinsic granularity. Our data, obtained for superconducting diamond, provide a reference for understanding the superconductivity in other granular disordered systems. Furthermore, our study brings attention to the significant influence of granular disorder on the physical properties of boron-doped diamond, which is considered a promising candidate for electronics applications.

  10. Electron transport in HBr adsorbed boron doped carbon nanotube

    NASA Astrophysics Data System (ADS)

    Srivastava, Reena; Shahzad Khan, Md.; Shrivastava, Sadhna; Srivastava, Anurag

    2017-01-01

    A 10,0 pristine as well as boron doped zigzag single walled carbon nanotube has been analyzed as possible HBr sensor using DFT based ab-initio approach. The variation in band structures, Mulliken charge, NBO charge, binding energy and conductance variation has been analyzed. The CNT observes a lowering of bandgap in presence of HBr molecule near its surface and reduces the metallicity of Boron doped CNT. The B-CNT shows semiconducting to metallic transition and on introducing the HBr molecule near the surface, changes its conductance drastically. Strong physisorption is observed for HBr over B-CNT surface as a consequence of electrostatic interaction.

  11. Boron-doped superlattices and Bragg mirrors in diamond

    SciTech Connect

    Fiori, A.; Bousquet, J.; Eon, D.; Omnès, F.; Bustarret, E.; Bellet-Amalric, E.

    2014-08-25

    A periodic modulation of the boron doping level of single crystal diamond multilayers over more than three orders of magnitude during epitaxial growth by microwave plasma-enhanced chemical vapor deposition is shown to yield Bragg mirrors in the visible. The thicknesses and doping level of the individual layers were controlled by in situ spectroscopic ellipsometry, enabling to tune the reflectance peak to the wavelength range of diamond color centers, such as NV{sup 0} or NV{sup −}. The crystalline quality, periodicity, and sharpness of the doping transitions in these doping superlattices over tens of periods were confirmed by high resolution X-ray diffraction.

  12. Simultaneous Graphite Exfoliation and N Doping in Supercritical Ammonia.

    PubMed

    Sasikala, Suchithra Padmajan; Huang, Kai; Giroire, Baptiste; Prabhakaran, Prem; Henry, Lucile; Penicaud, Alain; Poulin, Philippe; Aymonier, Cyril

    2016-11-16

    We report the exfoliation of graphite and simultaneous N doping of graphene by two methods: supercritical ammonia treatment and liquid-phase exfoliation with NH4OH. While the supercritical ammonia allowed N doping at a level of 6.4 atom % in 2 h, the liquid-phase exfoliation with NH4OH allowed N doping at a level of 2.7 atom % in 6 h. The N doped graphene obtained via the supercritical ammonia route had few layers (<5) and showed large lateral flake size (∼8 μm) and low defect density (ID/IG < 0.6) in spite of their high level of N doping. This work is the first demonstration of supercritical ammonia as an exfoliation agent and N doping precursor for graphene. Notably, the N doped graphene showed electrocatalytic activity toward oxygen reduction reaction with high durability and good methanol tolerance compared to those of commercial Pt/C catalyst.

  13. Temperature admittance spectroscopy of boron doped chemical vapor deposition diamond

    SciTech Connect

    Zubkov, V. I. Kucherova, O. V.; Zubkova, A. V.; Ilyin, V. A.; Afanas'ev, A. V.; Bogdanov, S. A.; Vikharev, A. L.; Butler, J. E.

    2015-10-14

    Precision admittance spectroscopy measurements over wide temperature and frequency ranges were carried out for chemical vapor deposition epitaxial diamond samples doped with various concentrations of boron. It was found that the experimentally detected boron activation energy in the samples decreased from 314 meV down to 101 meV with an increase of B/C ratio from 600 to 18000 ppm in the gas reactants. For the heavily doped samples, a transition from thermally activated valence band conduction to hopping within the impurity band (with apparent activation energy 20 meV) was detected at temperatures 120–150 K. Numerical simulation was used to estimate the impurity DOS broadening. Accurate determination of continuously altering activation energy, which takes place during the transformation of conduction mechanisms, was proposed by numerical differentiation of the Arrhenius plot. With increase of boron doping level the gradual decreasing of capture cross section from 3 × 10{sup −13} down to 2 × 10{sup −17} cm{sup 2} was noticed. Moreover, for the hopping conduction the capture cross section becomes 4 orders of magnitude less (∼2 × 10{sup −20} cm{sup 2}). At T > T{sub room} in doped samples the birth of the second conductance peak was observed. We attribute it to a defect, related to the boron doping of the material.

  14. Characteristics of boron doped mesophase pitch-based carbon fibers as anode materials for lithium secondary cells

    SciTech Connect

    Tamaki, Toshio; Kawamura, Toshifumi; Yamazaki, Yoshinori

    1998-07-01

    Mesophase pitch-based Carbon Fibers(MCF) have been investigated as anode materials for lithium secondary cells by examining their physical and electrochemical properties. Discharge capacity and initial charge-discharge efficiency of the materials were studied in relation to the heat treatment temperatures of MCF. MCF heat treated at about 3,000 C gave high discharge capacity over 310mAh/g, good efficiency (93%) and superior current capability of 600mA/g (6mA/cm2). On the other hand, to improve the battery capacity, Boron was doped to the fiber about several {degree} by adding B{sub 4}C to the pre-carbonized milled fibers and then heat-treated up to 3,000 C in Ar. Then heat treated at 2,500 C under vacuum condition to remove remained B{sub 4}C. The structure of Boron-doped fibers was characterized and compared with that of non-doped standard fibers, and also Li ion battery performances are evaluated. The Boron-doped MCF indicated improvement in graphitization and increased discharge capacity as high as 360mAh/g. The voltammograms of both fibers are different from each other. The cell mechanism is discussed based on the unique structure of Boron-doping to the MCF is very effective for the battery performance.

  15. Deuterium uptake in boronized ATJ graphite walls of NSTX-U

    NASA Astrophysics Data System (ADS)

    Dominguez, Javier; Bedoya, Felipe; Krstic, Predrag; Allain, Jean Paul; Irle, Stephan; Skinner, Charles; Kaita, Robert; Koel, Bruce

    2016-10-01

    We present a study of the role of boron and oxygen in the chemistry of deuterium retention in boronized ATJ graphite irradiated by a deuterium plasma. The experimental results were obtained by the first in vacuo X-ray Photoelectron Spectroscopy (XPS) measurements at the National Spherical Torus Experiment Upgrade (NSTX-U). The subtle interplay of boron, carbon, oxygen and deuterium chemistry is explained by reactive molecular dynamics simulation, verified by quantum-classical molecular dynamics and successfully compared to the measured data. The calculations deciphered the roles of oxygen and boron for the deuterium retention and predict deuterium uptake by a boronized carbon surface of 90% close in value to that previously predicted for a lithiated and oxidized carbon surface. CONACyT (JD), USDOE FES Grants (PSK and BK), USDOE BES/FES Grant (JPA and FB).

  16. Global and local superconductivity in boron-doped granular diamond.

    PubMed

    Zhang, Gufei; Turner, Stuart; Ekimov, Evgeny A; Vanacken, Johan; Timmermans, Matias; Samuely, Tomás; Sidorov, Vladimir A; Stishov, Sergei M; Lu, Yinggang; Deloof, Bart; Goderis, Bart; Van Tendeloo, Gustaaf; Van de Vondel, Joris; Moshchalkov, Victor V

    2014-04-02

    Strong granularity-correlated and intragrain modulations of the superconducting order parameter are demonstrated in heavily boron-doped diamond situated not yet in the vicinity of the metal-insulator transition. These modulations at the superconducting state (SC) and at the global normal state (NS) above the resistive superconducting transition, reveal that local Cooper pairing sets in prior to the global phase coherence.

  17. Fabrication and characterization of thermomechanically processed sulfur and boron doped amorphous carbon films

    NASA Astrophysics Data System (ADS)

    Carlson, Lonnie

    Small scale, high power density, reliable, and long-life power supplies would be useful or even critical for space missions or the growing number of microdetectors, microsensors, and miniature vehicles. Alpha or beta particle voltaic devices could satisfy these requirements but have been shown to degrade quickly due to radiation damage. Amorphous carbon (a-C) PN junctions or PIN devices could provide radiation hardness and sufficiently high efficiency. As the range of alpha and beta particles in a-C is ˜20-120microm, much thicker films than are typical are needed to maximize collection of the particle energy. In this work, the fabrication of thermomechanically processed p- and n-type doped a-C films were investigated as a first step in the future development of radiation hard voltaic devices. Boron carbide (B4C) powder was mixed with a-C nanopowders as a possible p-type dopant with sulfur powder utilized as a possible n-type dopant. Doping levels of 2.5at%, 5.0at%, and 10.0at% were investigated for both dopants with films pressed at 109°C over a pressure range of 0.3-5.0GPa. Initial attempts to fabricate rectifying PN junctions and PIN devices was unsuccessful. Bonding properties were characterized using Raman spectroscopy with electronic properties primarily assessed using the van der Pauw method. Undoped a-C and boron-doped films were found to be slightly p-type with sulfur-doped films converting to n-type. All films were found to consist almost entirely of nano-graphitic sp2 rings with only slight changes in disorder at different pressures. Sulfur doped films were less brittle which is indicative of crosslinking. Boron doping did not significantly change the film electronic properties and is not an effective dopant at these temperatures and pressures. Sulfur doping had a greater effect and could likely be utilized as basis for an n-type material in a device. Initial irradiation studies using alpha particles showed that boron and undoped films became more p

  18. Oxidation Resistant Graphite Studies

    SciTech Connect

    W. Windes; R. Smith

    2014-07-01

    The Very High Temperature Reactor (VHTR) Graphite Research and Development Program is investigating doped nuclear graphite grades exhibiting oxidation resistance. During a oxygen ingress accident the oxidation rates of the high temperature graphite core region would be extremely high resulting in significant structural damage to the core. Reducing the oxidation rate of the graphite core material would reduce the structural effects and keep the core integrity intact during any air-ingress accident. Oxidation testing of graphite doped with oxidation resistant material is being conducted to determine the extent of oxidation rate reduction. Nuclear grade graphite doped with varying levels of Boron-Carbide (B4C) was oxidized in air at nominal 740°C at 10/90% (air/He) and 100% air. The oxidation rates of the boronated and unboronated graphite grade were compared. With increasing boron-carbide content (up to 6 vol%) the oxidation rate was observed to have a 20 fold reduction from unboronated graphite. Visual inspection and uniformity of oxidation across the surface of the specimens were conducted. Future work to determine the remaining mechanical strength as well as graphite grades with SiC doped material are discussed.

  19. Doping with Graphitic Nitrogen Triggers Ferromagnetism in Graphene.

    PubMed

    Błoński, Piotr; Tuček, Jiří; Sofer, Zdeněk; Mazánek, Vlastimil; Petr, Martin; Pumera, Martin; Otyepka, Michal; Zbořil, Radek

    2017-03-01

    Nitrogen doping opens possibilities for tailoring the electronic properties and band gap of graphene toward its applications, e.g., in spintronics and optoelectronics. One major obstacle is development of magnetically active N-doped graphene with spin-polarized conductive behavior. However, the effect of nitrogen on the magnetic properties of graphene has so far only been addressed theoretically, and triggering of magnetism through N-doping has not yet been proved experimentally, except for systems containing a high amount of oxygen and thus decreased conductivity. Here, we report the first example of ferromagnetic graphene achieved by controlled doping with graphitic, pyridinic, and chemisorbed nitrogen. The magnetic properties were found to depend strongly on both the nitrogen concentration and type of structural N-motifs generated in the host lattice. Graphenes doped below 5 at. % of nitrogen were nonmagnetic; however, once doped at 5.1 at. % of nitrogen, N-doped graphene exhibited transition to a ferromagnetic state at ∼69 K and displayed a saturation magnetization reaching 1.09 emu/g. Theoretical calculations were used to elucidate the effects of individual chemical forms of nitrogen on magnetic properties. Results showed that magnetic effects were triggered by graphitic nitrogen, whereas pyridinic and chemisorbed nitrogen contributed much less to the overall ferromagnetic ground state. Calculations further proved the existence of exchange coupling among the paramagnetic centers mediated by the conduction electrons.

  20. Doping with Graphitic Nitrogen Triggers Ferromagnetism in Graphene

    PubMed Central

    2017-01-01

    Nitrogen doping opens possibilities for tailoring the electronic properties and band gap of graphene toward its applications, e.g., in spintronics and optoelectronics. One major obstacle is development of magnetically active N-doped graphene with spin-polarized conductive behavior. However, the effect of nitrogen on the magnetic properties of graphene has so far only been addressed theoretically, and triggering of magnetism through N-doping has not yet been proved experimentally, except for systems containing a high amount of oxygen and thus decreased conductivity. Here, we report the first example of ferromagnetic graphene achieved by controlled doping with graphitic, pyridinic, and chemisorbed nitrogen. The magnetic properties were found to depend strongly on both the nitrogen concentration and type of structural N-motifs generated in the host lattice. Graphenes doped below 5 at. % of nitrogen were nonmagnetic; however, once doped at 5.1 at. % of nitrogen, N-doped graphene exhibited transition to a ferromagnetic state at ∼69 K and displayed a saturation magnetization reaching 1.09 emu/g. Theoretical calculations were used to elucidate the effects of individual chemical forms of nitrogen on magnetic properties. Results showed that magnetic effects were triggered by graphitic nitrogen, whereas pyridinic and chemisorbed nitrogen contributed much less to the overall ferromagnetic ground state. Calculations further proved the existence of exchange coupling among the paramagnetic centers mediated by the conduction electrons. PMID:28110530

  1. Germanium-doped crystalline silicon: Effects of germanium doping on boron-related defects

    NASA Astrophysics Data System (ADS)

    Zhu, Xiaodong; Yu, Xuegong; Yang, Deren

    2014-09-01

    Recently it has been recognized that germanium (Ge) doping can be used for microelectronics and photovoltaic devices. This article reviews the recent results about the effects of Ge doping on boron-related defects in crystalline silicon. Behavior of Ge interacting with the acceptor dopants is also discussed therein. In addition, the article provides a comprehensive review on the effect of Ge doping to the formation of iron-boron pairs and boron-oxygen defects that is responsible for the light induced degradation (LID) of the carrier lifetime. The improvement silicon-based solar cells application from Ge doping is discussed as well, including the increment of cell efficiency and the power output of corresponding modules under sunlight illumination.

  2. Selecting boron fullerenes by cage-doping mechanisms

    NASA Astrophysics Data System (ADS)

    Boulanger, Paul; Morinière, Maxime; Genovese, Luigi; Pochet, Pascal

    2013-05-01

    So far, no boron fullerenes were synthesized: more compact sp3-bonded clusters are energetically preferred. To circumvent this, metallic clusters have been suggested by Pochet et al. [Phys. Rev. B 83, 081403(R) (2011), 10.1103/PhysRevB.83.081403] as "seeds" for a possible synthesis which would topologically protect the sp2 sector of the configuration space. In this paper, we identify a basic pentagonal unit which allows a balance between the release of strain and the self-doping rule. We formulate a guiding principle for the stability of boron fullerenes, which takes the form of an isolated filled pentagon rule (IFPR). The role of metallic clusters is then reexamined. It is shown that the interplay of the IFPR and the seed-induced doping breaks polymorphism and its related problems: it can effectively select between different isomers and reduce the reactivity of the boron shells. The balance between self and exterior doping represents the best strategy for boron buckyball synthesis.

  3. Photoelectron Spectroscopy of Aluminum Doped Boron Clusters

    NASA Astrophysics Data System (ADS)

    Li, Wei-Li; Romanescu, Constantin; Wang, Lai-Sheng

    2012-06-01

    Anionic boron clusters have been shown to be planar or quasi-planar up to B21- from a series of combined photoelectron spectroscopy and theoretical studies. All these boron clusters consist of a peripheral ring characterized by strong two-center-two-electron (2c-2e) B-B bonds and one or more interior atoms. The propensity for planarity is due to σ - and π -electron delocalizations throughout the molecular plane, giving rise to concepts of σ - and π -aromaticity. The quasi-planarity, on the other hand, can be mechanical in nature - the circumference of the cluster is too small to fit the inner atoms - even for doubly aromatic clusters. Two questions arise: firstly, can isoelectronic substitution by a single aluminum atom on the outer ring enhance the planarity of quasi-planar structures, and, secondly, can the interior boron atoms be replaced by aluminum? A series of aluminum isoelectronic substitution of boron clusters have been investigated ranging from B7- to B12-. Aluminum turns out to avoid the central position in the all these clusters and enhance the planarity of AlB6- and AlB11- clusters by expanding the peripheral ring. References: [1] C. Romanescu, A. P. Sergeeva, W. L. Li, A. I. Boldyrev and L. S. Wang, {J. Am. Chem. Soc}. {133} (22), 8646-8653 (2011) [2] T. R. Galeev, C. Romanescu, W. L. Li, L. S. Wang and A. I. Boldyrev, {J. Chem. Phys.} {135}, (8) 104301 (2011) [3] W. L. Li, C. Romanescu, T. R. Galeev, L. S. Wang and A. I. Boldyrev, {J. Phys. Chem. A} {115} (38), 10391-10397 (2011)

  4. Atomically controlled substitutional boron-doping of graphene nanoribbons

    NASA Astrophysics Data System (ADS)

    Kawai, Shigeki; Saito, Shohei; Osumi, Shinichiro; Yamaguchi, Shigehiro; Foster, Adam S.; Spijker, Peter; Meyer, Ernst

    2015-08-01

    Boron is a unique element in terms of electron deficiency and Lewis acidity. Incorporation of boron atoms into an aromatic carbon framework offers a wide variety of functionality. However, the intrinsic instability of organoboron compounds against moisture and oxygen has delayed the development. Here, we present boron-doped graphene nanoribbons (B-GNRs) of widths of N=7, 14 and 21 by on-surface chemical reactions with an employed organoboron precursor. The location of the boron dopant is well defined in the centre of the B-GNR, corresponding to 4.8 atom%, as programmed. The chemical reactivity of B-GNRs is probed by the adsorption of nitric oxide (NO), which is most effectively trapped by the boron sites, demonstrating the Lewis acid character. Structural properties and the chemical nature of the NO-reacted B-GNR are determined by a combination of scanning tunnelling microscopy, high-resolution atomic force microscopy with a CO tip, and density functional and classical computations.

  5. Study of helium embrittlement in boron doped EUROFER97 steels

    NASA Astrophysics Data System (ADS)

    Gaganidze, E.; Petersen, C.; Aktaa, J.

    2009-04-01

    To simulate helium effects in Reduced Activation Ferritic/Martensitic steels, experimental heats ADS2, ADS3 and ADS4 with the basic composition of EUROFER97 (9%Cr-WVTa) were doped with different contents of natural boron and separated 10B-isotope (0.008-0.112 wt.%) and irradiated in High Flux Reactor (HFR) Petten up to 16.3 dpa at 250-450 °C and in Bor-60 fast reactor in Dimitrovgrad up to 31.8 dpa at 332-338 °C. The embrittlement and hardening are investigated by instrumented Charpy-V tests with subsize specimens. Complete burn-up of 10B isotope under neutron irradiation in HFR Petten led to generation of 84, 432 and 5580 appm He and partial boron-to-helium transformation in Bor-60 led to generation of 9, 46, 880 appm He in ADS2, ADS3 and ADS4 heats, respectively. At low irradiation temperatures Tirr ⩽ 340 °C the boron doped steels show progressive embrittlement with increasing helium amount. Irradiation induced DBTT shift of EUROFER97 based heat doped with 1120 wppm separated 10B isotope could not be quantified due to large embrittlement found in the investigated temperature range. At Tirr ⩽ 340 °C helium induced extra embrittlement is attributed to material hardening induced by helium bubbles and described in terms of phenomenological model.

  6. Influence of boron on structure and oxidation behavior of graphite fiber, P120

    SciTech Connect

    Howe, Jane Y; Jones, Prof. Linda E

    2004-01-01

    P120 fibers, derived from mesophase pitch, were substitutionally doped with boron in the concentration ranges of 200-4600 ppm. An oxidation study was carried out in dry air at 973, 1023, and 1073 K at 95 kPa. Boron is preferentially positioned into the less disordered core region and in the external surface area (skin) of the fiber. Upon oxidation these regions are preferentially protected. Oxidation rates decreased by a factor up to 3, varying with boron concentration, burn-off level and oxidation temperature. The activation energy of oxidation increased from 151 kJ/mol for heat-treated P120 fibers to 180 kJ/mol for fibers with 3300 ppm B, then decreased to 122 kJ/mol for fibers containing 4600 ppm of boron. The observed decrease in oxidation rate is directly attributed to the location and concentration of boron. Boron doping inhibits oxidation by blocking specific active sites. It is proposed that 1000 ppm B as a threshold concentration at which the electronic, chemical, and physical (structural) behavior could be modified.

  7. Magnesium doping of boron nitride nanotubes

    DOEpatents

    Legg, Robert; Jordan, Kevin

    2015-06-16

    A method to fabricate boron nitride nanotubes incorporating magnesium diboride in their structure. In a first embodiment, magnesium wire is introduced into a reaction feed bundle during a BNNT fabrication process. In a second embodiment, magnesium in powder form is mixed into a nitrogen gas flow during the BNNT fabrication process. MgB.sub.2 yarn may be used for superconducting applications and, in that capacity, has considerably less susceptibility to stress and has considerably better thermal conductivity than these conventional materials when compared to both conventional low and high temperature superconducting materials.

  8. Chemical reaction of hexagonal boron nitride and graphite nanoclusters in mechanical milling systems

    SciTech Connect

    Muramatsu, Y.; Grush, M.; Callcott, T.A.

    1997-04-01

    Synthesis of boron-carbon-nitride (BCN) hybrid alloys has been attempted extensively by many researchers because the BCN alloys are considered an extremely hard material called {open_quotes}super diamond,{close_quotes} and the industrial application for wear-resistant materials is promising. A mechanical alloying (MA) method of hexagonal boron nitride (h-BN) with graphite has recently been studied to explore the industrial synthesis of the BCN alloys. To develop the MA method for the BCN alloy synthesis, it is necessary to confirm the chemical reaction processes in the mechanical milling systems and to identify the reaction products. Therefore, the authors have attempted to confirm the chemical reaction process of the h-BN and graphite in mechanical milling systems using x-ray absorption near edge structure (XANES) methods.

  9. The investigation of boron-doped diamond absorbance spectrum

    NASA Astrophysics Data System (ADS)

    Aksenova, A. S.; Altuhov, A. A.; Ryabeva, E. V.; Samosadnyi, V. T.; Feshchenko, V. S.; Chernyaev, A. P.; Shepelev, V. A.

    2017-01-01

    The trend of using of radiation with shorter wave length in leading high technological processes demands the detected search of materials for the solid-state electronics equipment and optical systems of an ultra violet and vacuum ultra violet spectral range. Diamond photodetectors of ultra violet radiation have the advantage of their opponents due to their unique properties, such as high sensitivity at the range of 190–250 nm and low sensitivity to the solar irradiation. The modification of semiconductive diamond material properties by the doping to get photodetectors with the different width of photosensitivity range is of a great interest. Due to this fact the spectroscopic investigation of artificial diamonds doped with boron took place for the definition of their applicability to produce the wide-spectral photosensitive equipment. The samples of thin diamond films were cut out in a crystallography plane (001). Sample transmission spectra were measured by vacuum infrared Fourier transform spectrometer at the range of 400–7000 cm-1. As a result it was explored that diamond based detectors doped with boron could be applied for the detection of infrared irradiation at the average infrared spectral range, however it is necessary to optimize the doping level of diamond materials to reach the compromise between the sensitivity and the speed capability of produced diamond photodetectors.

  10. Can doping graphite trigger room temperature superconductivity? Evidence for granular high-temperature superconductivity in water-treated graphite powder.

    PubMed

    Scheike, T; Böhlmann, W; Esquinazi, P; Barzola-Quiquia, J; Ballestar, A; Setzer, A

    2012-11-14

    Granular superconductivity in powders of small graphite grains (several tens of micrometers) is demonstrated after treatment with pure water. The temperature, magnetic field and time dependence of the magnetic moment of the treated graphite powder provides evidence for the existence of superconducting vortices with some similarities to high-temperature granular superconducting oxides but even at temperatures above 300 K. Room temperature superconductivity in doped graphite or at its interfaces appears to be possible.

  11. Hexagonal Boron Nitride Tunnel Barriers Grown on Graphite by High Temperature Molecular Beam Epitaxy.

    PubMed

    Cho, Yong-Jin; Summerfield, Alex; Davies, Andrew; Cheng, Tin S; Smith, Emily F; Mellor, Christopher J; Khlobystov, Andrei N; Foxon, C Thomas; Eaves, Laurence; Beton, Peter H; Novikov, Sergei V

    2016-09-29

    We demonstrate direct epitaxial growth of high-quality hexagonal boron nitride (hBN) layers on graphite using high-temperature plasma-assisted molecular beam epitaxy. Atomic force microscopy reveals mono- and few-layer island growth, while conducting atomic force microscopy shows that the grown hBN has a resistance which increases exponentially with the number of layers, and has electrical properties comparable to exfoliated hBN. X-ray photoelectron spectroscopy, Raman microscopy and spectroscopic ellipsometry measurements on hBN confirm the formation of sp(2)-bonded hBN and a band gap of 5.9 ± 0.1 eV with no chemical intermixing with graphite. We also observe hexagonal moiré patterns with a period of 15 nm, consistent with the alignment of the hBN lattice and the graphite substrate.

  12. Hexagonal Boron Nitride Tunnel Barriers Grown on Graphite by High Temperature Molecular Beam Epitaxy

    NASA Astrophysics Data System (ADS)

    Cho, Yong-Jin; Summerfield, Alex; Davies, Andrew; Cheng, Tin S.; Smith, Emily F.; Mellor, Christopher J.; Khlobystov, Andrei N.; Foxon, C. Thomas; Eaves, Laurence; Beton, Peter H.; Novikov, Sergei V.

    2016-09-01

    We demonstrate direct epitaxial growth of high-quality hexagonal boron nitride (hBN) layers on graphite using high-temperature plasma-assisted molecular beam epitaxy. Atomic force microscopy reveals mono- and few-layer island growth, while conducting atomic force microscopy shows that the grown hBN has a resistance which increases exponentially with the number of layers, and has electrical properties comparable to exfoliated hBN. X-ray photoelectron spectroscopy, Raman microscopy and spectroscopic ellipsometry measurements on hBN confirm the formation of sp2-bonded hBN and a band gap of 5.9 ± 0.1 eV with no chemical intermixing with graphite. We also observe hexagonal moiré patterns with a period of 15 nm, consistent with the alignment of the hBN lattice and the graphite substrate.

  13. Hexagonal Boron Nitride Tunnel Barriers Grown on Graphite by High Temperature Molecular Beam Epitaxy

    PubMed Central

    Cho, Yong-Jin; Summerfield, Alex; Davies, Andrew; Cheng, Tin S.; Smith, Emily F.; Mellor, Christopher J.; Khlobystov, Andrei N.; Foxon, C. Thomas; Eaves, Laurence; Beton, Peter H.; Novikov, Sergei V.

    2016-01-01

    We demonstrate direct epitaxial growth of high-quality hexagonal boron nitride (hBN) layers on graphite using high-temperature plasma-assisted molecular beam epitaxy. Atomic force microscopy reveals mono- and few-layer island growth, while conducting atomic force microscopy shows that the grown hBN has a resistance which increases exponentially with the number of layers, and has electrical properties comparable to exfoliated hBN. X-ray photoelectron spectroscopy, Raman microscopy and spectroscopic ellipsometry measurements on hBN confirm the formation of sp2-bonded hBN and a band gap of 5.9 ± 0.1 eV with no chemical intermixing with graphite. We also observe hexagonal moiré patterns with a period of 15 nm, consistent with the alignment of the hBN lattice and the graphite substrate. PMID:27681943

  14. Chemical Vapor Deposition of Phosphorous- and Boron-Doped Graphene Using Phenyl-Containing Molecules.

    PubMed

    Mekan Ovezmyradov; Magedov, Igor V; Frolova, Liliya V; Chandler, Gary; Garcia, Jill; Bethke, Donald; Shaner, Eric A; Kalugin, Nikolai G

    2015-07-01

    Simultaneous chemical vapor deposition (CVD) of graphene and "in-situ" phosphorous or boron doping of graphene was accomplished using Triphenylphosphine (TPP) and 4-Methoxyphenylboronic acid (4-MPBA). The TPP and 4-MPBA molecules were sublimated and supplied along with CH4 molecules during graphene growth at atmospheric pressure. The grown graphene samples were characterized using Raman spectroscopy. Phosphorous and boron presence in phosphorous and boron doped graphene was confirmed with Auger electron spectroscopy. The possibility of obtaining phosphorous and boron doped graphene using solid-source molecule precursors via CVD can lead to an easy and rapid production of modified large area graphene.

  15. Facile Synthesis of Boron-Doped rGO as Cathode Material for High Energy Li-O2 Batteries.

    PubMed

    Wu, Feng; Xing, Yi; Li, Li; Qian, Ji; Qu, Wenjie; Wen, Jianguo; Miller, Dean; Ye, Yusheng; Chen, Renjie; Amine, Khalil; Lu, Jun

    2016-09-14

    To improve the electrochemical performance of the high energy Li-O2 batteries, it is important to design and construct a suitable and effective oxygen-breathing cathode. Herein, a three-dimensional (3D) porous boron-doped reduction graphite oxide (B-rGO) material with a hierarchical structure has been prepared by a facile freeze-drying method. In this design, boric acid as the boron source helps to form the 3D porous structure, owing to its cross-linking and pore-forming function. This architecture facilitates the rapid oxygen diffusion and electrolyte penetration in the electrode. Meanwhile, the boron-oxygen functional groups linking to the carbon surface or edge serve as additional reaction sites to activate the ORR process. It is vital that boron atoms have been doped into the carbon lattices to greatly activate the electrons in the carbon π system, which is beneficial for fast charge under large current densities. Density functional theory calculation demonstrates that B-rGO exhibits much stronger interactions with Li5O6 clusters, so that B-rGO more effectively activates Li-O bonds to decompose Li2O2 during charge than rGO does. With B-rGO as a catalytic substrate, the Li-O2 battery achieves a high discharge capacity and excellent rate capability. Moreover, catalysts could be added into the B-rGO substrate to further lower the overpotential and enhance the cycling performance in future.

  16. Studies of lithiumization and boronization of ATJ graphite PFCs for NSTX-U

    NASA Astrophysics Data System (ADS)

    Dominguez, Javier; Bedoya, Felipe; Krstic, Predrag; Allain, Jean Paul; Neff, Anton; Luitjohan, Kara

    2016-10-01

    We examine and compare the effects of boron and lithium conditioning on ATJ graphite surfaces bombarded by low-energy deuterium atoms on deuterium retention and chemical sputtering. We use atomistic simulations and compare them with experimental in-situ ex-tempore studies with X-ray photoelectron spectroscopy (XPS), to understand the effects of deuterium exposure on the chemistry in lithiated, boronized and oxidized amorphous carbon surfaces. Our results are validated qualitatively by comparison with experiments and with classical-quantum molecular dynamic simulations. We explain the important role of oxygen in D retention for lithiated surfaces and the suppression of the oxygen role by boron in boronized surfaces. The calculated increase of the oxygen role in deuterium uptake after D accumulation in a B-C-O surface configuration is discussed. The sputtering yield per low-energy D impact is significantly smaller in boronized surfaces than in lithiated surfaces. This work was supported by the USDOE Grants DE-SC0013752 (PSK), DE-SC0010717 (JPA and FB) and DE-SC0010719 (AN) and by National council for Science and Technology of Mexico (CONACyT) through postdoctoral fellowship # 267898 (JD).

  17. The corrosion resistance of zinc coatings in the presence of boron-doped detonation nanodiamonds (DND)

    NASA Astrophysics Data System (ADS)

    Burkat, G. K.; Alexandrova, G. S.; Dolmatov, V. Yu; Osmanova, E. D.; Myllymäki, V.; Vehanen, A.

    2017-02-01

    The effect of detonation nanodiamonds, doped with boron (boron-DND) in detonation synthesis on the process of zinc electrochemical deposition from zincate electrolyte is investigated. It is shown that the scattering power (coating uniformity) increases 2-4 times (depending on the concentration of DND-boron electrolyte conductivity does not change, the corrosion resistance of Zn- DND -boron coating increases 2.6 times in 3% NaCl solution (corrosion currents) and 3 times in the climatic chamber.

  18. Characterisation of active dopants in boron-doped self-assembled silicon nanostructures

    NASA Astrophysics Data System (ADS)

    Puthen Veettil, Binesh; Zhang, Tian; Chin, Robert Lee; Jia, Xuguang; Nomoto, Keita; Yang, Terry Chien-Jen; Lin, Ziyun; Wu, Lingfeng; Rexiati, Reyifate; Gutsch, Sebastian; Conibeer, Gavin; Perez-Würfl, Ivan

    2016-10-01

    Doping of silicon nanocrystals has become an important topic due to its potential to enable the fabrication of environmentally friendly and cost-effective optoelectronic and photovoltaic devices. However, doping of silicon nanocrystals has been proven difficult and most of the structural and electronic properties are still not well understood. In this work, the intrinsic and boron-doped self-assembled silicon nanocrystals were prepared and mainly characterised by the transient current method to study the behaviour of charge carriers in these materials. Our experiments quantified the amount of electrically active boron dopants that contributed to charge transport. From this, the boron doping efficiency in the nanocrystal superlattice was estimated.

  19. Boron doped diamond microelectrodes arrays for electrochemical detection in HPLC.

    PubMed

    Mahé, Eric; Devilliers, Didier; Dardoize, François

    2015-01-01

    Boron doped diamond microelectrodes arrays (MEA) have been prepared in order to be used as new amperometric sensors in electrochemical cells for HPLC detectors. The following parameters were studied: number and diameter (15-40 µm) of the electrodes, distance between them (50-240 µm), and effect of the flow rate (0.1-3 mL/min). It was thus possible to find the optimum value of the parameters which give a good signal/noise ratio in the chronoamperometric responses, with a size of the electrochemical sensors as small as possible.

  20. (HBCU) Doped Graphene and Graphite as a Potential High Temperature Superconductor

    DTIC Science & Technology

    2013-07-23

    AFRL-OSR-VA-TR-2013-0420 (HBCU) DOPED GRAPHENE AND GRAPHITE AS A POTENTIAL HIGH TEMPERATURE SUPERCONDUCTOR Grover L. Larkins Jr...POTENTIAL HIGH TEMPERATURE SUPERCONDUCTOR Grover Larkins larkinsg@fiu.edu Florida International University Miami, Fl. 33199...onset temperatures in un- damaged doped graphite existed. This work was published in Superconductor Science and Technology as a rapid communication

  1. Doping Level of Boron-Doped Diamond Electrodes Controls the Grafting Density of Functional Groups for DNA Assays.

    PubMed

    Švorc, Ĺubomír; Jambrec, Daliborka; Vojs, Marian; Barwe, Stefan; Clausmeyer, Jan; Michniak, Pavol; Marton, Marián; Schuhmann, Wolfgang

    2015-09-02

    The impact of different doping levels of boron-doped diamond on the surface functionalization was investigated by means of electrochemical reduction of aryldiazonium salts. The grafting efficiency of 4-nitrophenyl groups increased with the boron levels (B/C ratio from 0 to 20,000 ppm). Controlled grafting of nitrophenyldiazonium was used to adjust the amount of immobilized single-stranded DNA strands at the surface and further on the hybridization yield in dependence on the boron doping level. The grafted nitro functions were electrochemically reduced to the amine moieties. Subsequent functionalization with a succinic acid introduced carboxyl groups for subsequent binding of an amino-terminated DNA probe. DNA hybridization significantly depends on the probe density which is in turn dependent on the boron doping level. The proposed approach opens new insights for the design and control of doped diamond surface functionalization for the construction of DNA hybridization assays.

  2. Percolation exponents and thresholds obtained from the nearly ideal continuum percolation system graphite-boron nitride

    SciTech Connect

    Wu, J.; McLachlan, D.S.

    1997-07-01

    Compressed disks made from graphite and, its mechanical but not electrical isomorph, boron nitride as well as graphite-boron nitride powders, undergoing compression, are nearly ideal continuum percolation systems, as the ratio of their conductivities is nearly 10{sup {minus}18} and the scatter of the experimental points near the critical volume fraction {phi}{sub c} is very small. The following measurements, with the characteristic exponent(s) in brackets, are made on some or all of the samples in (axial) and at right angles (radial) to the direction of compression, as a function of the volume fraction of graphite ({phi}); dc conductivity (s and t), dielectric constant (s), magnetoresistivity (t{sub {perpendicular}}), and noise power (K). The noise power is also measured as function of resistance (w) and volume (b{sup {prime}}). The {phi}{sub c}{close_quote}s obtained for all measurements are consistent and explicable. The results for the exponents are less well understood but, where possible, these results are compared with theoretical predictions and previous experiments. The reasons for the nonuniversality of t are clarified. {copyright} {ital 1997} {ital The American Physical Society}

  3. Boron doped simulated graphene field effect transistor model

    NASA Astrophysics Data System (ADS)

    Sharma, Preetika; Kaur, Inderpreet; Gupta, Shuchi; Singh, Sukhbir

    2016-05-01

    Graphene based electronic devices due to its unique properties has transformed electronics. A Graphene Field Effect Transistor (GNRFET) model is simulated in Virtual Nano Lab (VNL) and the calculations are based on density functional theory (DFT). Simulations were performed on this pristine GNRFET model and the transmission spectrum was observed. The graph obtained showed a uniform energy gap of +1 to -1eV and the highest transmission peak at -1.75 eV. To this pristine model of GNRFET, doping was introduced and its effect was seen on the Fermi level obtained in the transmission spectrum. Boron as a dopant was used which showed variations in both the transmission peaks and the energy gap. In this model, first the single boron was substituted in place of carbon and Fermi level showed an energy gap of 1.5 to -0.5eV with the highest transmission peak at -1.3 eV. In another variation in the model, two carbon atoms were replaced by two boron atoms and Fermi level shifted from 2 to 0.25eV. In this observation, the highest transmission peak was observed at -1(approx.). The use of nanoelectronic devices have opened many areas of applications as GFET is an excellent building block for electronic circuits, and is being used in applications such as high-performance frequency doublers and mixers, digital modulators, phase detectors, optoelectronics and spintronics.

  4. Boron-doped diamond heater and its application to large-volume, high-pressure, and high-temperature experiments.

    PubMed

    Shatskiy, Anton; Yamazaki, Daisuke; Morard, Guillaume; Cooray, Titus; Matsuzaki, Takuya; Higo, Yuji; Funakoshi, Ken-ichi; Sumiya, Hitoshi; Ito, Eiji; Katsura, Tomoo

    2009-02-01

    A temperature of 3500 degrees C was generated using a diamond resistance heater in a large-volume Kawai-type high-pressure apparatus. Re and LaCrO(3) have conventionally been used for heaters in high-pressure studies but they cannot generate temperatures higher than 2900 degrees C and make in situ x-ray observations difficult due to their high x-ray absorption. Using a boron-doped diamond heater overcomes these problems and achieves stable temperature generation for pressure over 10 GPa. The heater starting material is a cold-compressed mixture of graphite with boron used to avoid the manufacturing difficulties due to the extreme hardness of diamond. The diamond heater was synthesized in situ from the boron-graphite mixture at temperature of 1600+/-100 degrees C and pressure of 20 GPa. By using the proposed technique, we have employed the diamond heater for high-temperature generation in a large-volume high-pressure apparatus. Achievement of temperatures above 3000 degrees C allows us to measure the melting points of the important constituents in earth's mantle (MgSiO(3), SiO(2), and Al(2)O(3)) and core (Fe and Ni) at extremely high pressures.

  5. Enhanced diffusion of oxygen depending on Fermi level position in heavily boron-doped silicon

    SciTech Connect

    Torigoe, Kazuhisa Fujise, Jun; Ono, Toshiaki; Nakamura, Kozo

    2014-11-21

    The enhanced diffusivity of oxygen in heavily boron doped silicon was obtained by analyzing oxygen out-diffusion profile changes found at the interface between a lightly boron-doped silicon epitaxial layer and a heavily boron-doped silicon substrate by secondary ion mass spectrometry. It was found that the diffusivity is proportional to the square root of boron concentration in the range of 10{sup 18 }cm{sup −3}–10{sup 19 }cm{sup −3} at temperatures from 750 °C to 950 °C. The model based on the diffusion of oxygen dimers in double positive charge state could explain the enhanced diffusion. We have concluded that oxygen diffusion enhanced in heavily boron-doped silicon is attributed to oxygen dimers ionized depending on Fermi level position.

  6. Characteristic Study of Boron Doped Carbon Nanowalls Films Deposited by Microwave Plasma Enhanced Chemical Vapor Deposition.

    PubMed

    Lu, Chunyuan; Dong, Qi; Tulugan, Kelimu; Park, Yeong Min; More, Mahendra A; Kim, Jaeho; Kim, Tae Gyu

    2016-02-01

    In this research, catalyst-free vertically aligned boron doped carbon nanowalls films were fabricated on silicon (100) substrates by MPECVD using feeding gases CH4, H2 and B2H6 (diluted with H2 to 5% vol) as precursors. The substrates were pre-seeded with nanodiamond colloid. The fabricated CNWs films were characterized by Scanning Electron Microscopy (SEM) and Raman Spectroscopy. The data obtained from SEM confirms that the CNWs films have different density and wall thickness. From Raman spectrum, a G peak around 1588 cm(-1) and a D band peak at 1362 cm(-1) were observed, which indicates a successful fabrication of CNWs films. The EDX spectrum of boron doped CNWs film shows the existence of boron and carbon. Furthermore, field emission properties of boron doped carbon nanowalls films were measured and field enhancement factor was calculated using Fowler-Nordheim plot. The result indicates that boron doped CNWs films could be potential electron emitting materials.

  7. Structural and elastic properties characterization of Be and Mg doped boron nitride nanotubes using DFT calculations

    NASA Astrophysics Data System (ADS)

    Ansari, R.; Malakpour, S.

    2015-06-01

    Through doping boron nitride nanotubes, their band gaps could be controlled which results in extending the range of their applications particularly in nanosensors. In this article, the structural and elastic properties of Be and Mg doped boron nitride nanotubes with various chiralities are studied based on ab initio density functional calculations. In order to perform the density functional theory (DFT) calculations, the exchange correlation of Perdew-Burke-Ernzerhof within the generalized gradient approximation (GGA) framework is employed. It is observed that doping Be and Mg atoms increases the equilibrium strain energy of boron nitride nanotubes. Furthermore, it is found that among all of the considered nanotubes, an increase in the value of Young's modulus of (4, 4) armchair boron nitride nanotube through doping Be atom instead of boron atom is so considerable.

  8. Elastic and mechanical softening in boron-doped diamond.

    PubMed

    Liu, Xiaobing; Chang, Yun-Yuan; Tkachev, Sergey N; Bina, Craig R; Jacobsen, Steven D

    2017-02-24

    Alternative approaches to evaluating the hardness and elastic properties of materials exhibiting physical properties comparable to pure diamond have recently become necessary. The classic linear relationship between shear modulus (G) and Vickers hardness (HV), along with more recent non-linear formulations based on Pugh's modulus extending into the superhard region (HV > 40 GPa) have guided synthesis and identification of novel superabrasives. These schemes rely on accurately quantifying HV of diamond-like materials approaching or potentially exceeding the hardness of the diamond indenter, leading to debate about methodology and the very definition of hardness. Elasticity measurements on such materials are equally challenging. Here we used a high-precision, GHz-ultrasonic interferometer in conjunction with a newly developed optical contact micrometer and 3D optical microscopy of indentations to evaluate elasticity-hardness relations in the ultrahard range (HV > 80 GPa) by examining single-crystal boron-doped diamond (BDD) with boron contents ranging from 50-3000 ppm. We observe a drastic elastic-mechanical softening in highly doped BDD relative to the trends observed for superhard materials, providing insight into elasticity-hardness relations for ultrahard materials.

  9. Elastic and mechanical softening in boron-doped diamond

    PubMed Central

    Liu, Xiaobing; Chang, Yun-Yuan; Tkachev, Sergey N.; Bina, Craig R.; Jacobsen, Steven D.

    2017-01-01

    Alternative approaches to evaluating the hardness and elastic properties of materials exhibiting physical properties comparable to pure diamond have recently become necessary. The classic linear relationship between shear modulus (G) and Vickers hardness (HV), along with more recent non-linear formulations based on Pugh’s modulus extending into the superhard region (HV > 40 GPa) have guided synthesis and identification of novel superabrasives. These schemes rely on accurately quantifying HV of diamond-like materials approaching or potentially exceeding the hardness of the diamond indenter, leading to debate about methodology and the very definition of hardness. Elasticity measurements on such materials are equally challenging. Here we used a high-precision, GHz-ultrasonic interferometer in conjunction with a newly developed optical contact micrometer and 3D optical microscopy of indentations to evaluate elasticity-hardness relations in the ultrahard range (HV > 80 GPa) by examining single-crystal boron-doped diamond (BDD) with boron contents ranging from 50–3000 ppm. We observe a drastic elastic-mechanical softening in highly doped BDD relative to the trends observed for superhard materials, providing insight into elasticity-hardness relations for ultrahard materials. PMID:28233808

  10. Elastic and mechanical softening in boron-doped diamond

    NASA Astrophysics Data System (ADS)

    Liu, Xiaobing; Chang, Yun-Yuan; Tkachev, Sergey N.; Bina, Craig R.; Jacobsen, Steven D.

    2017-02-01

    Alternative approaches to evaluating the hardness and elastic properties of materials exhibiting physical properties comparable to pure diamond have recently become necessary. The classic linear relationship between shear modulus (G) and Vickers hardness (HV), along with more recent non-linear formulations based on Pugh’s modulus extending into the superhard region (HV > 40 GPa) have guided synthesis and identification of novel superabrasives. These schemes rely on accurately quantifying HV of diamond-like materials approaching or potentially exceeding the hardness of the diamond indenter, leading to debate about methodology and the very definition of hardness. Elasticity measurements on such materials are equally challenging. Here we used a high-precision, GHz-ultrasonic interferometer in conjunction with a newly developed optical contact micrometer and 3D optical microscopy of indentations to evaluate elasticity-hardness relations in the ultrahard range (HV > 80 GPa) by examining single-crystal boron-doped diamond (BDD) with boron contents ranging from 50–3000 ppm. We observe a drastic elastic-mechanical softening in highly doped BDD relative to the trends observed for superhard materials, providing insight into elasticity-hardness relations for ultrahard materials.

  11. XPS, SIMS and FTIR-ATR characterization of boronized graphite from the thermonuclear plasma device RFX-mod

    NASA Astrophysics Data System (ADS)

    Ghezzi, F.; Laguardia, L.; Caniello, R.; Canton, A.; Dal Bello, S.; Rais, B.; Anderle, M.

    2015-11-01

    In this paper the characterization of a thin (tens of nanometers) boron layer on fine grain polycrystalline graphite substrate is presented. The boron film is used as conditioning technique for the full graphite wall of the Reversed Field eXperiment-modified (RFX-mod) experiment, a device for the magnetic confinement of plasmas of thermonuclear interest. Aim of the present analysis is to enlighten the chemical structure of the film, the trapping mechanism that makes it a getter for oxygen and hydrogen and the reason of its loss of effectiveness after exposure to about 100 s of hydrogen plasma. X-ray Photoelectron Spectroscopy (XPS), Secondary Ions Mass Spectrometry (SIMS) and Fourier Transform Infra Red spectroscopy in combination with the Attenuated Total Reflectance (FTIR-ATR) were used to obtain the structure and the chemical composition of graphitic samples as coated or coated and subsequently exposed to hydrogen plasma after boron deposition. The boron layers on the only coated samples were found to be amorphous hydrogenated boron carbide plus a variety of bonds like B-B, B-H, B-O, B-OH, C-C, C-H, C-O, C-OH. Both the thickness and the homogeneity of the layers were found to depend on the distance of the sample from the anode during the deposition. The samples contained oxygen along the layer thickness, at level of 5%, bound to boron. The gettering action of the boron is therefore already active during the deposition itself. The exposure to plasma caused erosion of the boron film and higher content of H and O bound to boron throughout the whole thickness. The interaction of the B layer with plasma is therefore a bulk phenomenon.

  12. Determination of boron in silicon-doped gallium arsenide by electrothermal atomic absorption spectrometry and ultraviolet-visible spectrophotometry.

    PubMed

    Taddia, Marco; Cerroni, Maria Grazia; Morelli, Elio; Musiani, Andrea

    2002-01-01

    Two methods have been developed for the determination of boron impurities in silicon-doped gallium arsenide (GaAs) for electronics. The first method employs the electrothermal atomic absorption spectrometry (ETAAS), the second, the UV-Vis molecular absorption spectrophotomety. In both cases the GaAs sample is decomposed with aqua regia (1+1). To prevent Ga(III) interference on the ETAAS determination of boron, a double extraction of the chlorogallic acid (HGaCl4) in diethyl ether is performed. To improve the overall ETAAS performance, the graphite tubes were pre-treated with iridium(III) and tungsten(IV). A mixed chemical modifier containing Ni(II), Sr(II) and citric acid was also used. The characteristic mass (m0) is 301 +/- 47 pg and the detection limit (3sB) is 2.4 microg g(-1). The classic UV-Vis spectrophotometric procedure using curcumin was also extended to the determination of boron in GaAs. By masking Ga(III) with EDTA and a preliminary extraction of boron with 2-ethyl-hexane 1,3-diol, performed on a semi-micro scale, a detection limit of 0.6 microg g(-1) was achieved. Both methods were applied to the analysis of two Si-doped GaAs samples which were suspected of being boron-contaminated. Results are compared with those obtained by direct analysis of the decomposed sample solution using the inductively coupled plasma atomic emission spectrometry (ICP-AES).

  13. B and N isolate-doped graphitic carbon nanosheets from nitrogen-containing ion-exchanged resins for enhanced oxygen reduction

    NASA Astrophysics Data System (ADS)

    Wang, Lei; Yu, Peng; Zhao, Lu; Tian, Chungui; Zhao, Dongdong; Zhou, Wei; Yin, Jie; Wang, Ruihong; Fu, Honggang

    2014-06-01

    B,N-codoped carbon nanostructures (BNCS) can serve as alternative low-cost metal-free electrocatalysts for oxygen reduction reactions (ORR). However, the compensation effect between the p- (B atoms) and n-type (N atoms) dopants would make the covalent boron-nitride (BN) easily formed during the synthesis of BNCS, leading to a unsatisfactory ORR activity. Therefore, it has been challenging to develop facile and rapid synthetic strategies for highly active BNCS without forming the direct covalent BN. Here, a facile method is developed to prepare B and N isolate-doped graphitic nanosheets (BNGS) by using iron species for saving N element and simultaneous doping the B element from nitrogen-containing ion-exchanged resins (NR). The resulting BNGS exhibits much more onset potential (Eonset) compared with the B-doped graphitic carbon nanosheets (BGS), N-doped graphitic carbon nanosheets (NGS), as well as B,N-codoped disorder carbon (BNC). Moreover, the BNGS shows well methanol tolerance propery and excellent stability (a minimal loss of activity after 5,000 potential cycles) compared to that of commercial Pt/C catalyst. The goog performance for BNGS towards ORR is attributed to the synergistic effect between B and N, and the well electrons transport property of graphitic carbon in BNGS.

  14. B and N isolate-doped graphitic carbon nanosheets from nitrogen-containing ion-exchanged resins for enhanced oxygen reduction

    PubMed Central

    Wang, Lei; Yu, Peng; Zhao, Lu; Tian, Chungui; Zhao, Dongdong; Zhou, Wei; Yin, Jie; Wang, Ruihong; Fu, Honggang

    2014-01-01

    B,N-codoped carbon nanostructures (BNCS) can serve as alternative low-cost metal-free electrocatalysts for oxygen reduction reactions (ORR). However, the compensation effect between the p- (B atoms) and n-type (N atoms) dopants would make the covalent boron-nitride (BN) easily formed during the synthesis of BNCS, leading to a unsatisfactory ORR activity. Therefore, it has been challenging to develop facile and rapid synthetic strategies for highly active BNCS without forming the direct covalent BN. Here, a facile method is developed to prepare B and N isolate-doped graphitic nanosheets (BNGS) by using iron species for saving N element and simultaneous doping the B element from nitrogen-containing ion-exchanged resins (NR). The resulting BNGS exhibits much more onset potential (Eonset) compared with the B-doped graphitic carbon nanosheets (BGS), N-doped graphitic carbon nanosheets (NGS), as well as B,N-codoped disorder carbon (BNC). Moreover, the BNGS shows well methanol tolerance propery and excellent stability (a minimal loss of activity after 5,000 potential cycles) compared to that of commercial Pt/C catalyst. The goog performance for BNGS towards ORR is attributed to the synergistic effect between B and N, and the well electrons transport property of graphitic carbon in BNGS. PMID:24898033

  15. Boron carbide-based coatings on graphite for plasma facing components

    SciTech Connect

    Valentine, P.G.; Trester, P.W.; Winter, J.; Linke, J.; Duwe, R.; Wallura, E.; Philipps, V.

    1994-01-01

    In the effort to evaluate boron-rich coatings as plasma facing surfaces in fusion devices, a new process for applying boron carbide (B{sub 4}C) coatings to graphite was developed. The process entails eutectic melting of the carbon (C) substrate surface with a precursor layer of B{sub 4}C particles. Adherent coatings were achieved which consisted of two layers: a surface layer and a graded penetration zone in the outer portion of the substrate. The surface-layer microstructure was multiphase and ranged from reaction-sintered structures of sintered B{sub 4}C particles in an eutectic-formed matrix to that of hypereutectic carbon particles in a B{sub 4}C-C eutectic matrix. Because of high surface energy, the coating generally developed a nonuniform thickness. Quantitative evaluations of the coating were performed with limiters in the TEXTOR fusion device and with coupons in electron beam tests. Test results revealed the following: good adherence of the coating even after remelting; and, during remelting, diagnostics detected a corresponding interaction of boron with the plasma.

  16. Effect of the doping level on the biological stability of hydrogenated boron doped diamond electrodes.

    PubMed

    Trouillon, Raphaël; O'Hare, Danny; Einaga, Yasuaki

    2011-03-28

    Fouling of electrode surfaces by electrode reaction products or by biological spectator species is known to inactivate electrochemical sensors and thus limit their use in biological conditions. Here we present an investigation on the stability of boron doped diamond (BDD) electrodes with different levels of doping. Three different doping levels were used (0.1, 1 and 5% in the carbon phase). The highly doped (5%) BDD is of particular interest as it is here used for the first time for biological applications. Three different redox reactions were examined based on their electrode reaction characteristics: ruthenium(III) hexaammine (outer sphere), ferrocyanide (surface dependent), dopamine (adsorption mediated). The effect of albumin at blood concentration was studied. All results were compared with glassy carbon. There were no significant differences for the outer sphere electrochemistry, but all the BDDs showed improved resistance to fouling for the ferrocyanide oxidation. The electrocatalytic activity of BBD towards dopamine oxidation increased with increased boron content. However, this appears to be due to a larger number of defect sites which also increases the vulnerability to fouling by albumin and by electrode reaction products and the 5% BDD had similar properties to glassy carbon in this regard. These results suggest that it is possible to optimise the BDD performance for specific applications and that the large potential window for BDD may be due, at least in part, to its relatively poor electrocatalytic activity.

  17. Boron doped diamond biotechnology: from sensors to neurointerfaces.

    PubMed

    Hébert, C; Scorsone, E; Bendali, A; Kiran, R; Cottance, M; Girard, H A; Degardin, J; Dubus, E; Lissorgues, G; Rousseau, L; Mailley, P; Picaud, S; Bergonzo, P

    2014-01-01

    Boron doped nanocrystalline diamond is known as a remarkable material for the fabrication of sensors, taking advantage of its biocompatibility, electrochemical properties, and stability. Sensors can be fabricated to directly probe physiological species from biofluids (e.g. blood or urine), as will be presented. In collaboration with electrophysiologists and biologists, the technology was adapted to enable structured diamond devices such as microelectrode arrays (MEAs), i.e. common electrophysiology tools, to probe neuronal activity distributed over large populations of neurons or embryonic organs. Specific MEAs can also be used to build neural prostheses or implants to compensate function losses due to lesions or degeneration of parts of the central nervous system, such as retinal implants, which exhibit real promise as biocompatible neuroprostheses for in vivo neuronal stimulations. New electrode geometries enable high performance electrodes to surpass more conventional materials for such applications.

  18. Dirac cones in transition metal doped boron nitride

    SciTech Connect

    Feng, Min; Cao, Xuewei; Shao, Bin; Zuo, Xu

    2015-05-07

    The transition metal (TM) doped zinc blende boron nitride (c-BN) is studied by using the first principle calculation. TM atoms fill in the interstitials in c-BN and form two-dimensional honeycomb lattice. The generalized gradient approximation and projector augmented wave method are used. The calculated density of states and band structures show that d electrons of TM atoms form impurity bands in the gap of c-BN. When the TM-BN system is in ferromagnetic or non-magnetic state, Dirac cones emerge at the K point in Brillouin zone. When TM is Ti and Co, the Dirac cones are spin polarized and very close to the Fermi level, which makes them promising candidates of Dirac half-metal [H. Ishizuka and Y. Motome, Phys. Rev. Lett. 109, 237207 (2012)]. While TM is Ni and Cu, the system is non-magnetic and Dirac cones located above the Fermi level.

  19. Boron-doped cobalt oxide thin films and its electrochemical properties

    NASA Astrophysics Data System (ADS)

    Kerli, S.

    2016-09-01

    The cobalt oxide and boron-doped cobalt oxide thin films were produced by spray deposition method. All films were obtained onto glass and fluorine-doped tin oxide (FTO) substrates at 400∘C and annealed at 550∘C. We present detailed analysis of the morphological and optical properties of films. XRD results show that boron doping disrupts the structure of the films. Morphologies of the films were investigated by using a scanning electron microscopy (SEM). Optical measurements indicate that the band gap energies of the films change with boron concentrations. The electrochemical supercapacitor performance test has been studied in aqueous 6 M KOH electrolyte and with scan rate of 5 mV/s. Measurements show that the largest capacitance is obtained for 3% boron-doped cobalt oxide film.

  20. Toward deep blue nano hope diamonds: heavily boron-doped diamond nanoparticles.

    PubMed

    Heyer, Steffen; Janssen, Wiebke; Turner, Stuart; Lu, Ying-Gang; Yeap, Weng Siang; Verbeeck, Jo; Haenen, Ken; Krueger, Anke

    2014-06-24

    The production of boron-doped diamond nanoparticles enables the application of this material for a broad range of fields, such as electrochemistry, thermal management, and fundamental superconductivity research. Here we present the production of highly boron-doped diamond nanoparticles using boron-doped CVD diamond films as a starting material. In a multistep milling process followed by purification and surface oxidation we obtained diamond nanoparticles of 10-60 nm with a boron content of approximately 2.3 × 10(21) cm(-3). Aberration-corrected HRTEM reveals the presence of defects within individual diamond grains, as well as a very thin nondiamond carbon layer at the particle surface. The boron K-edge electron energy-loss near-edge fine structure demonstrates that the B atoms are tetrahedrally embedded into the diamond lattice. The boron-doped diamond nanoparticles have been used to nucleate growth of a boron-doped diamond film by CVD that does not contain an insulating seeding layer.

  1. Cytotoxicity of Boron-Doped Nanocrystalline Diamond Films Prepared by Microwave Plasma Chemical Vapor Deposition

    NASA Astrophysics Data System (ADS)

    Liu, Dan; Gou, Li; Ran, Junguo; Zhu, Hong; Zhang, Xiang

    2015-07-01

    Boron-doped nanocrystalline diamond (NCD) exhibits extraordinary mechanical properties and chemical stability, making it highly suitable for biomedical applications. For implant materials, the impact of boron-doped NCD films on the character of cell growth (i.e., adhesion, proliferation) is very important. Boron-doped NCD films with resistivity of 10-2 Ω·cm were grown on Si substrates by the microwave plasma chemical vapor deposition (MPCVD) process with H2 bubbled B2O3. The crystal structure, diamond character, surface morphology, and surface roughness of the boron-doped NCD films were analyzed using different characterization methods, such as X-ray diffraction (XRD), Raman spectroscopy, scanning electron microscopy (SEM) and atomic force microscopy (AFM). The contact potential difference and possible boron distribution within the film were studied with a scanning kelvin force microscope (SKFM). The cytotoxicity of films was studied by in vitro tests, including fluorescence microscopy, SEM and MTT assay. Results indicated that the surface roughness value of NCD films was 56.6 nm and boron was probably accumulated at the boundaries between diamond agglomerates. MG-63 cells adhered well and exhibited a significant growth on the surface of films, suggesting that the boron-doped NCD films were non-toxic to cells. supported by the Open Foundation of State Key Laboratory of Electronic Thin Films and Integrated Devices (University of Electronic Science and Technology of China) (No. KFJJ201313)

  2. Plasma-induced highly efficient synthesis of boron doped reduced graphene oxide for supercapacitors.

    PubMed

    Li, Shaobo; Wang, Zhaofeng; Jiang, Hanmei; Zhang, Limei; Ren, Jingzheng; Zheng, Mingtao; Dong, Lichun; Sun, Luyi

    2016-09-21

    In this work, we presented a novel route to synthesize boron doped reduced graphene oxide (rGO) by using the dielectric barrier discharge (DBD) plasma technology under ambient conditions. The doping of boron (1.4 at%) led to a significant improvement in the capacitance of rGO and supercapacitors based on the as-synthesized B-rGO exhibited an outstanding specific capacitance.

  3. Properties of boron-doped thin films of polycrystalline silicon

    SciTech Connect

    Merabet, Souad

    2013-12-16

    The properties of polycrystalline-silicon films deposited by low pressure chemical vapor deposition and doped heavily in situ boron-doped with concentration level of around 2×10{sup 20}cm{sup −3} has been studied. Their properties are analyzed using electrical and structural characterization means by four points probe resistivity measurements and X-ray diffraction spectra. The thermal-oxidation process are performed on sub-micron layers of 200nm/c-Si and 200nm/SiO{sub 2} deposited at temperatures T{sub d} ranged between 520°C and 605°C and thermally-oxidized in dry oxygen ambient at 945°C. Compared to the as-grown resistivity with silicon wafers is known to be in the following sequence <ρ{sub 200nm/c−Si}> < <ρ{sub 200nm/SiO2}> and <ρ{sub 520}> < <ρ{sub 605}>. The measure X-ray spectra is shown, that the Bragg peaks are marked according to the crystal orientation in the film deposited on bare substrates (poly/c-Si), for the second series of films deposited on bare oxidized substrates (poly/SiO{sub 2}) are clearly different.

  4. Hydrogen storage material and process using graphite additive with metal-doped complex hydrides

    DOEpatents

    Zidan, Ragaiy; Ritter, James A.; Ebner, Armin D.; Wang, Jun; Holland, Charles E.

    2008-06-10

    A hydrogen storage material having improved hydrogen absorbtion and desorption kinetics is provided by adding graphite to a complex hydride such as a metal-doped alanate, i.e., NaAlH.sub.4. The incorporation of graphite into the complex hydride significantly enhances the rate of hydrogen absorbtion and desorption and lowers the desorption temperature needed to release stored hydrogen.

  5. X-ray photoelectron spectroscopy of graphitic carbon nanomaterials doped with heteroatoms.

    PubMed

    Susi, Toma; Pichler, Thomas; Ayala, Paola

    2015-01-01

    X-ray photoelectron spectroscopy (XPS) is one of the best tools for studying the chemical modification of surfaces, and in particular the distribution and bonding of heteroatom dopants in carbon nanomaterials such as graphene and carbon nanotubes. Although these materials have superb intrinsic properties, these often need to be modified in a controlled way for specific applications. Towards this aim, the most studied dopants are neighbors to carbon in the periodic table, nitrogen and boron, with phosphorus starting to emerge as an interesting new alternative. Hundreds of studies have used XPS for analyzing the concentration and bonding of dopants in various materials. Although the majority of works has concentrated on nitrogen, important work is still ongoing to identify its precise atomic bonding configurations. In general, care should be taken in the preparation of a suitable sample, consideration of the intrinsic photoemission response of the material in question, and the appropriate spectral analysis. If this is not the case, incorrect conclusions can easily be drawn, especially in the assignment of measured binding energies into specific atomic configurations. Starting from the characteristics of pristine materials, this review provides a practical guide for interpreting X-ray photoelectron spectra of doped graphitic carbon nanomaterials, and a reference for their binding energies that are vital for compositional analysis via XPS.

  6. Controlled in situ boron doping of short silicon nanowires grown by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Das Kanungo, Pratyush; Zakharov, Nikolai; Bauer, Jan; Breitenstein, Otwin; Werner, Peter; Goesele, Ulrich

    2008-06-01

    Epitaxial silicon nanowires (NWs) of short heights (˜280nm) on Si ⟨111⟩ substrate were grown and doped in situ with boron on a concentration range of 1015-1019cm-3 by coevaporation of atomic Si and B by molecular beam epitaxy. Transmission electron microscopy revealed a single-crystalline structure of the NWs. Electrical measurements of the individual NWs confirmed the doping. However, the low doped (1015cm-3) and medium doped (3×1016 and 1×1017cm-3) NWs were heavily depleted by the surface states while the high doped (1018 and 1019cm-3) ones showed volume conductivities expected for the corresponding intended doping levels.

  7. Fabrication and characterization of boron-doped nanocrystalline diamond-coated MEMS probes

    NASA Astrophysics Data System (ADS)

    Bogdanowicz, Robert; Sobaszek, Michał; Ficek, Mateusz; Kopiec, Daniel; Moczała, Magdalena; Orłowska, Karolina; Sawczak, Mirosław; Gotszalk, Teodor

    2016-04-01

    Fabrication processes of thin boron-doped nanocrystalline diamond (B-NCD) films on silicon-based micro- and nano-electromechanical structures have been investigated. B-NCD films were deposited using microwave plasma assisted chemical vapour deposition method. The variation in B-NCD morphology, structure and optical parameters was particularly investigated. The use of truncated cone-shaped substrate holder enabled to grow thin fully encapsulated nanocrystalline diamond film with a thickness of approx. 60 nm and RMS roughness of 17 nm. Raman spectra present the typical boron-doped nanocrystalline diamond line recorded at 1148 cm-1. Moreover, the change in mechanical parameters of silicon cantilevers over-coated with boron-doped diamond films was investigated with laser vibrometer. The increase of resonance to frequency of over-coated cantilever is attributed to the change in spring constant caused by B-NCD coating. Topography and electrical parameters of boron-doped diamond films were investigated by tapping mode AFM and electrical mode of AFM-Kelvin probe force microscopy (KPFM). The crystallite-grain size was recorded at 153 and 238 nm for boron-doped film and undoped, respectively. Based on the contact potential difference data from the KPFM measurements, the work function of diamond layers was estimated. For the undoped diamond films, average CPD of 650 mV and for boron-doped layer 155 mV were achieved. Based on CPD values, the values of work functions were calculated as 4.65 and 5.15 eV for doped and undoped diamond film, respectively. Boron doping increases the carrier density and the conductivity of the material and, consequently, the Fermi level.

  8. Experimental studies of graphite-epoxy and boron-epoxy angle ply laminates in shear

    NASA Technical Reports Server (NTRS)

    Weller, T.

    1977-01-01

    The nonlinear/inelastic response under inplane shear of a large variety of graphite-epoxy and boron-epoxy angle-ply laminates was tested. Their strength allowables were obtained and the mechanisms which govern their mode of failure were determined. Two types of specimens for the program were chosen, tested, and evaluated: shear panels stabilized by an aluminum honeycomb core and shear tubes. A modified biaxially compression/tension loaded picture frame was designed and utilized in the test program with the shear panels. The results obtained with this test technique categorically prefer the shear panels, rather than the tubes, for adequate and satisfactory experimental definition of the objectives. Test results indicate the existence of a so-called core-effect which ought to be considered when reducing experimental data for weak in shear laminates.

  9. Development of finely dispersed Ti- and Zr-doped isotropic graphites for the divertor of next step fusion devices

    NASA Astrophysics Data System (ADS)

    López-Galilea, I.; García-Rosales, C.; Pintsuk, G.; Linke, J.

    2007-03-01

    Finely dispersed Ti- and Zr-doped isotropic graphites have been manufactured using three different starting raw materials. The aim is to obtain doped fine grain isotropic graphites with reduced chemical erosion, high thermal shock resistance and low cost, which aim to be competitive with present carbon-based candidate materials for next step fusion devices. First ITER relevant thermal shock loads were applied on test specimens of these materials. The brittle destruction behaviour of graphite is greatly improved by doping with Ti or Zr, most probably due to a significant increase of thermal conductivity related to the catalytic effect of TiC and ZrC on the graphitization. Doped graphites manufactured with the synthetic mesophase pitch 'AR' as raw material showed the best performance from the three investigated raw materials due to its higher graphitability. The eroded surfaces of doped graphites exhibit a thin solidified carbide layer, probably caused by the segregation of liquid carbide during the thermal shot.

  10. Synthesis and Raman Characterization of Boron Doped Single Walled Carbon Nanotubes (SWNTs)

    NASA Astrophysics Data System (ADS)

    McGuire, K.; Gothard, N.; Gai, P. L.; Chao, S. G.; Dresselhaus, M. S.; Rao, A. M.

    2003-11-01

    Boron-doped SWNTs were prepared by pulsed laser vaporization of carbon targets containing boron with concentrations ranging between 0.5 - 10 at%. As-prepared samples were characterized using Raman spectroscopy and HRTEM measurements. Above a threshold boron concentration of 3 at%, the growth of SWNT bundles ceases due to the low solubility of boron in carbon at ˜1200 ^oC. Interestingly, a few ˜0.5 nm diameter single walled tubes are found, along with nanographitic material in the soot generated from a target with a boron concentration of ˜7 at%. As expected, the intensity of the ˜1350 cm-1 D-band increases with increasing boron concentration due to boron substitution into the honeycomb lattice. Both the radial breathing mode and tangential G- bands were observed in the Raman spectra in samples with <3 at % boron at ˜186 cm-1 and ˜1591 cm-1, respectively. Implications of boron doping in the nanotube shell will be discussed.

  11. Synthesis and Raman Characterization of Boron Doped Single Walled Carbon Nanotubes (SWNTs)

    NASA Astrophysics Data System (ADS)

    McGuire, K.; Gothard, N.; Gai, P. L.; Chou, S. G.; Dresselhaus, M. S.; Rao, A. M.

    2003-03-01

    Boron-doped SWNTs were prepared by pulsed laser vaporization of carbon targets containing boron with concentrations ranging between 0.5 - 10 at%. As-prepared samples were characterized using Raman spectroscopy and HRTEM measurements. Above a threshold boron concentration of 3 at%, the growth of SWNT bundles ceases due to the low solubility of boron in carbon at ˜1200 ^oC. Interestingly, a few ˜0.5 nm diameter single walled tubes are found, along with nanographitic material in the soot generated from a target with a boron concentration of ˜7 at%. As expected, the intensity of the ˜1350 cm-1 D-band increases with increasing boron concentration due to boron substitution into the honeycomb lattice. Both the radial breathing mode and tangential G- bands were observed in the Raman spectra in samples with <3 at % boron at ˜186 cm-1 and ˜1591 cm-1, respectively. Implications of boron doping in the nanotube shell will be discussed.

  12. Thermodynamic Studies of Decane on Boron Nitride and Graphite Substrates Using Synchrotron Radiation and Molecular Dynamics Simulations

    NASA Astrophysics Data System (ADS)

    Strange, Nicholas; Arnold, Thomas; Forster, Matthew; Parker, Julia; Larese, J. Z.; Diamond Light Source Collaboration; University of Tennessee Team

    2014-03-01

    Hexagonal boron nitride (hBN) has a lattice structure similar to that of graphite with a slightly larger lattice parameter in the basal plane. This, among other properties, makes it an excellent substrate in place of graphite, eliciting some important differences. This work is part of a larger effort to examine the interaction of alkanes with magnesium oxide, graphite, and boron nitride surfaces. In our current presentation, we will discuss the interaction of decane with these surfaces. Decane exhibits a fully commensurate structure on graphite and hBN at monolayer coverages. In this particular experiment, we have examined the monolayer structure of decane adsorbed on the basal plane of hBN using synchrotron x-ray radiation at Diamond Light Source. Additionally, we have examined the system experimentally with volumetric isotherms as well as computationally using molecular dynamics simulations. The volumetric isotherms allow us to calculate properties which provide important information about the adsorbate's interaction with not only neighboring molecules, but also the interaction with the adsorbent boron nitride.

  13. Suppression of boron-oxygen defects in Czochralski silicon by carbon co-doping

    SciTech Connect

    Wu, Yichao; Yu, Xuegong He, Hang; Chen, Peng; Yang, Deren

    2015-03-09

    We have investigated the influence of carbon co-doping on the formation of boron-oxygen defects in Czochralski silicon. It is found that carbon can effectively suppress the formation of boron-oxygen defects. Based on our experiments and first-principle theoretical calculations, it is believed that this effect is attributed to the formation of more energetically favorable carbon-oxygen complexes. Moreover, the diffusion of oxygen dimers in carbon co-doped silicon also becomes more difficult. All these phenomena should be associated with the tensile stress field induced by carbon doping in silicon.

  14. The effect of substrate temperature and growth rate on the doping efficiency of single crystal boron doped diamond

    SciTech Connect

    Demlow, SN; Rechenberg, R; Grotjohn, T

    2014-10-01

    The substrate growth temperature dependence of the plasma gas-phase to solid-phase doping efficiency in single crystal, boron doped diamond (BDD) deposition is investigated. Single crystal diamond (SCD) is grown by microwave plasma assisted chemical vapor deposition (MPACVD) on high pressure, high temperature (HPHT) type Ib substrates. Samples are grown at substrate temperatures of 850-950 degrees C for each of five doping concentration levels, to determine the effect of the growth temperature on the doping efficiency and defect morphology. The substrate temperature during growth is shown to have a significant effect on the grown sample defect morphology, and a temperature dependence of the doping efficiency is also shown. The effect of the growth rate on the doping efficiency is discussed, and the ratio of the boron concentration in the gas phase to the flux of carbon incorporated into the solid diamond phase is shown to be a more predictive measure of the resulting boron concentration than the gas phase boron to carbon ratio that is more commonly reported. (C) 2014 Elsevier B.V. All rights reserved.

  15. Boron- and phosphorus-doped polycrystalline silicon thin films prepared by silver-induced layer exchange

    SciTech Connect

    Antesberger, T.; Wassner, T. A.; Jaeger, C.; Algasinger, M.; Kashani, M.; Scholz, M.; Matich, S.; Stutzmann, M.

    2013-05-27

    Intentional boron and phosphorus doping of polycrystalline silicon thin films on glass prepared by the silver-induced layer exchange is presented. A silver/(titanium) oxide/amorphous silicon stack is annealed at temperatures below the eutectic temperature of the Ag/Si system, leading to a complete layer exchange and simultaneous crystallization of the amorphous silicon. Intentional doping of the amorphous silicon prior to the exchange process results in boron- or phosphorus-doped polycrystalline silicon. Hall effect measurements show carrier concentrations between 2 Multiplication-Sign 10{sup 17} cm{sup -3} and 3 Multiplication-Sign 10{sup 20} cm{sup -3} for phosphorus and 4 Multiplication-Sign 10{sup 18} cm{sup -3} to 3 Multiplication-Sign 10{sup 19} cm{sup -3} for boron-doped layers, with carrier mobilities up to 90 cm{sup 2}/V s.

  16. Optical and electrical properties of undoped and boron doped zinc oxide synthesized by chemical route

    SciTech Connect

    Bhattacharjee, Snigdha; Basu, Moumita; Roy, Asim

    2015-08-28

    We have synthesized and studied the boron doped ZnO nanostructure thin films. The crystallinity of undoped and boron (B) doped ZnO (BZO) has been studied from XRD results. Using the Debye-Scherrer Formula, the grain size has been evaluated, which was found to decrease with increased doping concentration. The optical and electrical properties of (1, 3, 5 wt%) B-doped ZnO (BZO) has been investigated with reference to the undoped counterpart. The UV-VIS spectroscopic analysis revealed that the transmittance for undoped ZnO is maximum and it decreases with doping up to 3% but increases for 5% BZO. The dark as well as photo current–voltage (I–V) characteristics have been investigated in details and the changes occurred in the I-V characteristics with doping concentration as well as under illumination are also quite significant.

  17. In/extrinsic granularity in superconducting boron-doped diamond

    NASA Astrophysics Data System (ADS)

    Willems, B. L.; Zhang, G.; Vanacken, J.; Moshchalkov, V. V.; Guillamon, I.; Suderow, H.; Vieira, S.; Janssens, S. D.; Haenen, K.; Wagner, P.

    2010-10-01

    When charge carriers are introduced in diamond, e.g. by chemical doping with Boron (B), the C1-x∼1021 cm), diamond becomes superconducting. Using microwave plasma-assisted chemical vapor deposition (MPCVD) we have prepared diamond:B thin films with critical offset temperatures T below 3 K. We have investigated the transport properties of these diamond:B thin films, which show pronounced granular effects. It turns out, that this granularity is both intrinsic as well as extrinsic. The extrinsic granularity is the effect of the growth method which needs to start from a seeding of the substrate with detonation nanodiamond, which acts as nucleation centers for further MPCVD growth of the film. In using SPM/STM techniques, we also observed intrinsic granularity, meaning that within physical grains, we observe also a strong intragrain modulation of the order parameter. As a consequence of these granularities, the transport properties show evidence of (i) strong superconducting fluctuations and (ii) Cooper pair tunneling and/or quasiparticle tunneling. The latter effects explain the observed negative magnetoresistance.

  18. High-concentration boron doping of graphene nanoplatelets by simple thermal annealing and their supercapacitive properties

    NASA Astrophysics Data System (ADS)

    Yeom, Da-Young; Jeon, Woojin; Tu, Nguyen Dien Kha; Yeo, So Young; Lee, Sang-Soo; Sung, Bong June; Chang, Hyejung; Lim, Jung Ah; Kim, Heesuk

    2015-05-01

    For the utilization of graphene in various energy storage and conversion applications, it must be synthesized in bulk with reliable and controllable electrical properties. Although nitrogen-doped graphene shows a high doping efficiency, its electrical properties can be easily affected by oxygen and water impurities from the environment. We here report that boron-doped graphene nanoplatelets with desirable electrical properties can be prepared by the simultaneous reduction and boron-doping of graphene oxide (GO) at a high annealing temperature. B-doped graphene nanoplatelets prepared at 1000 °C show a maximum boron concentration of 6.04 ± 1.44 at %, which is the highest value among B-doped graphenes prepared using various methods. With well-mixed GO and g-B2O3 as the dopant, highly uniform doping is achieved for potentially gram-scale production. In addition, as a proof-of-concept, highly B-doped graphene nanoplatelets were used as an electrode of an electrochemical double-layer capacitor (EDLC) and showed an excellent specific capacitance value of 448 F/g in an aqueous electrolyte without additional conductive additives. We believe that B-doped graphene nanoplatelets can also be used in other applications such as electrocatalyst and nano-electronics because of their reliable and controllable electrical properties regardless of the outer environment.

  19. Conductive Boron-Doped Graphene as an Ideal Material for Electrocatalytically Switchable and High-Capacity Hydrogen Storage.

    PubMed

    Tan, Xin; Tahini, Hassan A; Smith, Sean C

    2016-12-07

    Electrocatalytic, switchable hydrogen storage promises both tunable kinetics and facile reversibility without the need for specific catalysts. The feasibility of this approach relies on having materials that are easy to synthesize, possessing good electrical conductivities. Graphitic carbon nitride (g-C4N3) has been predicted to display charge-responsive binding with molecular hydrogen-the only such conductive sorbent material that has been discovered to date. As yet, however, this conductive variant of graphitic carbon nitride is not readily synthesized by scalable methods. Here, we examine the possibility of conductive and easily synthesized boron-doped graphene nanosheets (B-doped graphene) as sorbent materials for practical applications of electrocatalytically switchable hydrogen storage. Using first-principle calculations, we find that the adsorption energy of H2 molecules on B-doped graphene can be dramatically enhanced by removing electrons from and thereby positively charging the adsorbent. Thus, by controlling charge injected or depleted from the adsorbent, one can effectively tune the storage/release processes which occur spontaneously without any energy barriers. At full hydrogen coverage, the positively charged BC5 achieves high storage capacities up to 5.3 wt %. Importantly, B-doped graphene, such as BC49, BC7, and BC5, have good electrical conductivity and can be easily synthesized by scalable methods, which positions this class of material as a very good candidate for charge injection/release. These predictions pave the route for practical implementation of electrocatalytic systems with switchable storage/release capacities that offer high capacity for hydrogen storage.

  20. Impact resistance of composite fan blades. [fiber reinforced graphite and boron epoxy blades for STOL operating conditions

    NASA Technical Reports Server (NTRS)

    Premont, E. J.; Stubenrauch, K. R.

    1973-01-01

    The resistance of current-design Pratt and Whitney Aircraft low aspect ratio advanced fiber reinforced epoxy matrix composite fan blades to foreign object damage (FOD) at STOL operating conditions was investigated. Five graphite/epoxy and five boron/epoxy wide chord fan blades with nickel plated stainless steel leading edge sheath protection were fabricated and impact tested. The fan blades were individually tested in a vacuum whirlpit under FOD environments. The FOD environments were typical of those encountered in service operations. The impact objects were ice balls, gravel, stralings and gelatin simulated birds. Results of the damage sustained from each FOD impact are presented for both the graphite boron reinforced blades. Tests showed that the present design composite fan blades, with wrap around leading edge protection have inadequate FOD impact resistance at 244 m/sec (800 ft/sec) tip speed, a possible STOL operating condition.

  1. Formation of Boron-Carbon Nanosheets and Bilayers in Boron-Doped Diamond: Origin of Metallicity and Superconductivity.

    PubMed

    Polyakov, S N; Denisov, V N; Mavrin, B N; Kirichenko, A N; Kuznetsov, M S; Martyushov, S Yu; Terentiev, S A; Blank, V D

    2016-12-01

    The insufficient data on a structure of the boron-doped diamond (BDD) has frustrated efforts to fully understand the fascinating electronic properties of this material and how they evolve with doping. We have employed X-ray diffraction and Raman scattering for detailed study of the large-sized BDD single crystals. We demonstrate a formation of boron-carbon (B-C) nanosheets and bilayers in BDD with increasing boron concentration. An incorporation of two boron atoms in the diamond unit cell plays a key role for the B-C nanosheets and bilayer formation. Evidence for these B-C bilayers which are parallel to {111} planes is provided by the observation of high-order, super-lattice reflections in X-ray diffraction and Laue patterns. B-C nanosheets and bilayers minimize the strain energy and affect the electronic structure of BDD. A new shallow acceptor level associated with B-C nanosheets at ~37 meV and the spin-orbit splitting of the valence band of ~6 meV are observed in electronic Raman scattering. We identified that the superconducting transitions occur in the (111) BDD surfaces only. We believe that the origin of Mott and superconducting transitions is associated with the two-dimensional (2D) misfit layer structure of BDD. A model for the BDD crystal structure, based on X-ray and Raman data, is proposed and confirmed by density functional theoretical calculation.

  2. Effect of nitrogen on the growth of boron doped single crystal diamond

    DOE PAGES

    Karna, Sunil; Vohra, Yogesh

    2013-11-18

    Boron-doped single crystal diamond films were grown homoepitaxially on synthetic (100) Type Ib diamond substrates using microwave plasma assisted chemical vapor deposition. A modification in surface morphology of the film with increasing boron concentration in the plasma has been observed using atomic force microscopy. Use of nitrogen during boron doping has been found to improve the surface morphology and the growth rate of films but it lowers the electrical conductivity of the film. The Raman spectra indicated a zone center optical phonon mode along with a few additional bands at the lower wavenumber regions. The change in the peak profilemore » of the zone center optical phonon mode and its downshift were observed with the increasing boron content in the film. Furthermore, sharpening and upshift of Raman line was observed in the film that was grown in presence of nitrogen along with diborane in process gas.« less

  3. Effect of nitrogen on the growth of boron doped single crystal diamond

    SciTech Connect

    Karna, Sunil; Vohra, Yogesh

    2013-11-18

    Boron-doped single crystal diamond films were grown homoepitaxially on synthetic (100) Type Ib diamond substrates using microwave plasma assisted chemical vapor deposition. A modification in surface morphology of the film with increasing boron concentration in the plasma has been observed using atomic force microscopy. Use of nitrogen during boron doping has been found to improve the surface morphology and the growth rate of films but it lowers the electrical conductivity of the film. The Raman spectra indicated a zone center optical phonon mode along with a few additional bands at the lower wavenumber regions. The change in the peak profile of the zone center optical phonon mode and its downshift were observed with the increasing boron content in the film. Furthermore, sharpening and upshift of Raman line was observed in the film that was grown in presence of nitrogen along with diborane in process gas.

  4. The crystal structure of aluminum doped {beta}-rhombohedral boron

    SciTech Connect

    Bykova, Elena; Parakhonskiy, Gleb; Dubrovinskaia, Natalia; Chernyshov, Dmitry; Dubrovinsky, Leonid

    2012-10-15

    A crystal structure of aluminum doped {beta}-rhombohedral boron was studied by single-crystal X-ray diffraction at 80 K. The crystals were synthesized using high-pressure high temperature technique at 3 GPa and 2100 K. The structure is based on three-dimensional framework made of B{sub 12} icosahedra with voids occupied by the B{sub 28}-B-B{sub 28} units, it has the R-3m space group with a=10.9014(3), c=23.7225(7) A lattice dimensions in hexagonal setting. Aluminum atoms are located in A1 and D special positions of the {beta}-B structure with occupancies of 82.7(6)% and 11.3(4)%, respectively. Additional boron atoms are located near the D-site. Their possible distribution is discussed. Finally we have found two appropriate structural models whose refinement suggests two possible chemical compositions, AlB{sub 44.8(5)} and AlB{sub 37.8(5)}, which are in a good agreement with the chemical analysis data obtained from EDX. The crystal structure of AlB{sub 44.8(5)} is described in detail. - Graphical abstract: The atomic distribution near the B(15) atom (non-labeled atom in the center of the picture) shown along the c axis. Anisotropic displacement ellipses for Al(2) (D-site) and B(15) are shown with 50 % probability level. The mirror plane with Miller indices (1 1 0) and related to it (-1 2 0) and (-2 1 0) generated by the 3-fold rotation-inversion axis parallel to the c axis splits the position of B(16) over two sites. Highlights: Black-Right-Pointing-Pointer The crystal structure of the AlB{sub 44.8(5)} has been refined. Black-Right-Pointing-Pointer Aluminum atoms partially fill certain types of voids (the A1- and D-sites). Black-Right-Pointing-Pointer We have got two possible models of atomic distribution near the D-site.

  5. Multiple delta doping of single crystal cubic boron nitride films heteroepitaxially grown on (001)diamonds

    NASA Astrophysics Data System (ADS)

    Yin, H.; Ziemann, P.

    2014-06-01

    Phase pure cubic boron nitride (c-BN) films have been epitaxially grown on (001) diamond substrates at 900 °C. The n-type doping of c-BN epitaxial films relies on the sequential growth of nominally undoped (p-) and Si doped (n-) layers with well-controlled thickness (down to several nanometer range) in the concept of multiple delta doping. The existence of nominally undoped c-BN overgrowth separates the Si doped layers, preventing Si dopant segregation that was observed for continuously doped epitaxial c-BN films. This strategy allows doping of c-BN films can be scaled up to multiple numbers of doped layers through atomic level control of the interface in the future electronic devices. Enhanced electronic transport properties with higher hall mobility (102 cm2/V s) have been demonstrated at room temperature as compared to the normally continuously Si doped c-BN films.

  6. Properties and electrochemical characteristics of boron-doped multi-walled carbon nanotubes

    NASA Astrophysics Data System (ADS)

    Tsierkezos, Nikos G.; Ritter, Uwe; Nugraha Thaha, Yudi; Krischok, Stefan; Himmerlich, Marcel; Downing, Clive

    2015-10-01

    Boron-doped multi-walled carbon nanotubes were synthesized upon decomposition of ethyl alcohol and boric acid via chemical vapor deposition. The boron-doped nanotubes were treated with hydrochloric acid and were characterized by means of scanning electron and transmission electron microscopy in conjunction with energy-dispersive X-ray spectrometry and X-ray photoelectron spectroscopy. The electrochemistry of ferrocyanide/ferricyanide on boron-doped nanotubes was studied in temperature range of 283.15-303.15 K. The findings exhibit an improvement of films' current response and kinetics of electron transfer with the rise in temperature. The kinetics for electron transfer enhances and the redox process occurs slightly more spontaneously upon acid treatment.

  7. Critical boron-doping levels for generation of dislocations in synthetic diamond

    SciTech Connect

    Alegre, M. P. Araújo, D.; Pinero, J. C.; Lloret, F.; Villar, M. P.; Fiori, A.; Achatz, P.; Chicot, G.; Bustarret, E.; Jomard, F.

    2014-10-27

    Defects induced by boron doping in diamond layers were studied by transmission electron microscopy. The existence of a critical boron doping level above which defects are generated is reported. This level is found to be dependent on the CH{sub 4}/H{sub 2} molar ratios and on growth directions. The critical boron concentration lied in the 6.5–17.0 × 10{sup 20}at/cm{sup 3} range in the 〈111〉 direction and at 3.2 × 10{sup 21 }at/cm{sup 3} for the 〈001〉 one. Strain related effects induced by the doping are shown not to be responsible. From the location of dislocations and their Burger vectors, a model is proposed, together with their generation mechanism.

  8. An insight into what superconducts in polycrystalline boron-doped diamonds based on investigations of microstructure

    PubMed Central

    Dubrovinskaia, N.; Wirth, R.; Wosnitza, J.; Papageorgiou, T.; Braun, H. F.; Miyajima, N.; Dubrovinsky, L.

    2008-01-01

    The discovery of superconductivity in polycrystalline boron-doped diamond (BDD) synthesized under high pressure and high temperatures [Ekimov, et al. (2004) Nature 428:542–545] has raised a number of questions on the origin of the superconducting state. It was suggested that the heavy boron doping of diamond eventually leads to superconductivity. To justify such statements more detailed information on the microstructure of the composite materials and on the exact boron content in the diamond grains is needed. For that we used high-resolution transmission electron microscopy and electron energy loss spectroscopy. For the studied superconducting BDD samples synthesized at high pressures and high temperatures the diamond grain sizes are ≈1–2 μm with a boron content between 0.2 (2) and 0.5 (1) at %. The grains are separated by 10- to 20-nm-thick layers and triangular-shaped pockets of predominantly (at least 95 at %) amorphous boron. These results render superconductivity caused by the heavy boron doping in diamond highly unlikely. PMID:18697937

  9. Phonon characteristics and photoluminescence of bamboo structured silicon-doped boron nitride multiwall nanotubes

    NASA Astrophysics Data System (ADS)

    Xu, Shifeng; Fan, Yi; Luo, Jingsong; Zhang, Ligong; Wang, Wenquan; Yao, Bin; An, Linan

    2007-01-01

    Bamboo structured silicon-doped boron nitride multiwall nanotubes are synthesized via catalyst-assisted pyrolysis of a boron-containing polymeric precursor. The nanotubes are characterized using transmission electron microscopy, x-ray diffraction, Raman, and Fourier-transformed infrared spectroscope. The results suggest that the Si dopants cause significant changes in the structure and phonon characteristics of the nanotubes as compared to pure boron nitride nanotubes. A broad photoluminescence band ranging between 500 and 800nm is observed from the nanotubes, which is attributed to Si dopants. Study on temperature dependence of emission intensity suggests that the thermal activation energy of the nonradiative recombination process is 35meV.

  10. Converting graphene oxide monolayers into boron carbonitride nanosheets by substitutional doping.

    PubMed

    Lin, Tsung-Wu; Su, Ching-Yuan; Zhang, Xin-Quan; Zhang, Wenjing; Lee, Yi-Hsien; Chu, Chih-Wei; Lin, Hsin-Yu; Chang, Mu-Tung; Chen, Fu-Rong; Li, Lain-Jong

    2012-05-07

    To realize graphene-based electronics, bandgap opening of graphene has become one of the most important issues that urgently need to be addressed. Recent theoretical and experimental studies show that intentional doping of graphene with boron and nitrogen atoms is a promising route to open the bandgap, and the doped graphene might exhibit properties complementary to those of graphene and hexagonal boron nitride (h-BN), largely extending the applications of these materials in the areas of electronics and optics. This work demonstrates the conversion of graphene oxide nanosheets into boron carbonitride (BCN) nanosheets by reacting them with B(2) O(3) and ammonia at 900 to 1100 °C, by which the boron and nitrogen atoms are incorporated into the graphene lattice in randomly distributed BN nanodomains. The content of BN in BN-doped graphene nanosheets can be tuned by changing the reaction temperature, which in turn affects the optical bandgap of these nanosheets. Electrical measurements show that the BN-doped graphene nanosheet exhibits an ambipolar semiconductor behavior and the electrical bandgap is estimated to be ≈25.8 meV. This study provides a novel and simple route to synthesize BN-doped graphene nanosheets that may be useful for various optoelectronic applications.

  11. Ti-doped isotropic graphite: A promising armour material for plasma-facing components

    NASA Astrophysics Data System (ADS)

    García-Rosales, C.; López-Galilea, I.; Ordás, N.; Adelhelm, C.; Balden, M.; Pintsuk, G.; Grattarola, M.; Gualco, C.

    2009-04-01

    Finely dispersed Ti-doped isotropic graphites with 4 at.% Ti have been manufactured using synthetic mesophase pitch 'AR' as raw material. These new materials show a thermal conductivity at room temperature of ˜200 W/mK and flexural strength close to 100 MPa. Measurement of the total erosion yield by deuterium bombardment at ion energies and sample temperatures for which pure carbon shows maximum values, resulted in a reduction of at least a factor of 4, mainly due to dopant enrichment at the surface caused by preferential erosion of carbon. In addition, ITER relevant thermal shock loads were applied with an energetic electron beam at the JUDITH facility. The results demonstrated a significantly improved performance of Ti-doped graphite compared to pure graphite. Finally, Ti-doped graphite was successfully brazed to a CuCrZr block using a Mo interlayer. These results let assume that Ti-doped graphite can be a promising armour material for divertor plasma-facing components.

  12. Study of the roles of chemical modifiers in determining boron using graphite furnace atomic absorption spectrometry and optimization of the temperature profile during atomization.

    PubMed

    Yamamoto, Yuhei; Shirasaki, Toshihiro; Yonetani, Akira; Imai, Shoji

    2015-01-01

    The measurement conditions for determining boron using graphite furnace-atomic absorption spectrometry (GF-AAS) were investigated. Differences in the boron absorbance profiles were found using three different commercially available GF-AAS instruments when the graphite atomizers in them were not tuned. The boron absorbances found with and without adjusting the graphite atomizers suggested that achieving an adequate absorbance for the determination of boron requires a sharp temperature profile that overshoots the target temperature during the atomization process. Chemical modifiers that could improve the boron absorbance without the need for using coating agents were tested. Calcium carbonate improved the boron absorbance but did not suppress variability in the peak height. Improvement of boron absorbance was comparatively less using iron nitrate or copper nitrate than using calcium carbonate, but variability in the peak height was clearly suppressed using iron nitrate or copper nitrate. The limit of detection was 0.0026 mg L(-1) when iron nitrate was used. It appears that iron nitrate is a useful new chemical modifier for the quick and simple determination of boron using GF-AAS.

  13. New Pathways and Metrics for Enhanced, Reversible Hydrogen Storage in Boron-Doped Carbon Nanospaces

    SciTech Connect

    Pfeifer, Peter; Wexler, Carlos; Hawthorne, M. Frederick; Lee, Mark W.; Jalistegi, Satish S.

    2014-08-14

    This project, since its start in 2007—entitled “Networks of boron-doped carbon nanopores for low-pressure reversible hydrogen storage” (2007-10) and “New pathways and metrics for enhanced, reversible hydrogen storage in boron-doped carbon nanospaces” (2010-13)—is in support of the DOE's National Hydrogen Storage Project, as part of the DOE Hydrogen and Fuel Cells Program’s comprehensive efforts to enable the widespread commercialization of hydrogen and fuel cell technologies in diverse sectors of the economy. Hydrogen storage is widely recognized as a critical enabling technology for the successful commercialization and market acceptance of hydrogen powered vehicles. Storing sufficient hydrogen on board a wide range of vehicle platforms, at energy densities comparable to gasoline, without compromising passenger or cargo space, remains an outstanding technical challenge. Of the main three thrust areas in 2007—metal hydrides, chemical hydrogen storage, and sorption-based hydrogen storage—sorption-based storage, i.e., storage of molecular hydrogen by adsorption on high-surface-area materials (carbons, metal-organic frameworks, and other porous organic networks), has emerged as the most promising path toward achieving the 2017 DOE storage targets of 0.055 kg H2/kg system (“5.5 wt%”) and 0.040 kg H2/liter system. The objective of the project is to develop high-surface-area carbon materials that are boron-doped by incorporation of boron into the carbon lattice at the outset, i.e., during the synthesis of the material. The rationale for boron-doping is the prediction that boron atoms in carbon will raise the binding energy of hydro- gen from 4-5 kJ/mol on the undoped surface to 10-14 kJ/mol on a doped surface, and accordingly the hydro- gen storage capacity of the material. The mechanism for the increase in binding energy is electron donation from H2 to electron-deficient B atoms, in the form of sp2 boron-carbon bonds. Our team is proud to have

  14. Ultrasensitive gas detection of large-area boron-doped graphene

    PubMed Central

    Lv, Ruitao; Chen, Gugang; Li, Qing; McCreary, Amber; Botello-Méndez, Andrés; Morozov, S. V.; Declerck, Xavier; Perea-López, Nestor; Cullen, David A.; Feng, Simin; Elías, Ana Laura; Cruz-Silva, Rodolfo; Fujisawa, Kazunori; Endo, Morinobu; Kang, Feiyu; Charlier, Jean-Christophe; Meunier, Vincent; Pan, Minghu; Harutyunyan, Avetik R.; Novoselov, Konstantin S.; Terrones, Mauricio

    2015-01-01

    Heteroatom doping is an efficient way to modify the chemical and electronic properties of graphene. In particular, boron doping is expected to induce a p-type (boron)-conducting behavior to pristine (nondoped) graphene, which could lead to diverse applications. However, the experimental progress on atomic scale visualization and sensing properties of large-area boron-doped graphene (BG) sheets is still very scarce. This work describes the controlled growth of centimeter size, high-crystallinity BG sheets. Scanning tunneling microscopy and spectroscopy are used to visualize the atomic structure and the local density of states around boron dopants. It is confirmed that BG behaves as a p-type conductor and a unique croissant-like feature is frequently observed within the BG lattice, which is caused by the presence of boron-carbon trimers embedded within the hexagonal lattice. More interestingly, it is demonstrated for the first time that BG exhibits unique sensing capabilities when detecting toxic gases, such as NO2 and NH3, being able to detect extremely low concentrations (e.g., parts per trillion, parts per billion). This work envisions that other attractive applications could now be explored based on as-synthesized BG. PMID:26575621

  15. Biophotonic low-coherence sensors with boron-doped diamond thin layer

    NASA Astrophysics Data System (ADS)

    Milewska, D.; Karpienko, K.; Sobaszek, M.; Jedrzejewska-Szczerska, M.

    2016-03-01

    Low-coherence sensors using Fabry-Perot interferometers are finding new applications in biophotonic sensing, especially due to the rapid technological advances in the development of new materials. In this paper we discuss the possibility of using boron-doped nanodiamond layers to protect mirror in a Fabry-Perot interferometer. A low-coherence sensor using Fabry-Perot interferometer with a boron-doped nanodiamond (B-NCD) thin protective layer has been developed. B-NCD layers with different boron doping level were investigated. The boron level, expressed as the boron to carbon (/[C]) ratio in the gas phase, was: 0, 2000, 5000 or 10000 ppm. B-NCD layers were grown by chemical vapor deposition (CVD). The sensing Fabry-Perot interferometer, working in the reflective mode, was connected to the source and to the optical processor by single-mode fibers. Superluminescent diodes with Gaussian spectral density were used as sources, while an optical spectrum analyzer was used as an optical processor. The design of the sensing interferometer was optimized to attain the maximum interference contrast. The experiment has shown that B-NCD thin layers can be successfully used in biophotonic sensors.

  16. Heavily boron-doped Si layers grown below 700 C by molecular beam epitaxy using a HBO2 source

    NASA Technical Reports Server (NTRS)

    Lin, T. L.; Fathauer, R. W.; Grunthaner, P. J.

    1989-01-01

    Boron doping in Si layers grown by molecular beam epitaxy (MBE) at 500-700 C using an HBO2 source has been studied. The maximum boron concentration without detectable oxygen incorporation for a given substrate temperature and Si growth rate has been determined using secondary-ion mass spectrometry analysis. Boron present in the Si MBE layers grown at 550-700 C was found to be electrically active, independent of the amount of oxygen incorporation. By reducing the Si growth rate, highly boron-doped layers have been grown at 600 C without detectable oxygen incorporation.

  17. Cat-doping: Novel method for phosphorus and boron shallow doping in crystalline silicon at 80 °C

    NASA Astrophysics Data System (ADS)

    Matsumura, Hideki; Hayakawa, Taro; Ohta, Tatsunori; Nakashima, Yuki; Miyamoto, Motoharu; Thi, Trinh Cham; Koyama, Koichi; Ohdaira, Keisuke

    2014-09-01

    Phosphorus (P) or boron (B) atoms can be doped at temperatures as low as 80 to 350 °C, when crystalline silicon (c-Si) is exposed only for a few minutes to species generated by catalytic cracking reaction of phosphine (PH3) or diborane (B2H6) with heated tungsten (W) catalyzer. This paper is to investigate systematically this novel doping method, "Cat-doping", in detail. The electrical properties of P or B doped layers are studied by the Van der Pauw method based on the Hall effects measurement. The profiles of P or B atoms in c-Si are observed by secondary ion mass spectrometry mainly from back side of samples to eliminate knock-on effects. It is confirmed that the surface of p-type c-Si is converted to n-type by P Cat-doping at 80 °C, and similarly, that of n-type c-Si is to p-type by B Cat-doping. The doping depth is as shallow as 5 nm or less and the electrically activated doping concentration is 1018 to 1019 cm-3 for both P and B doping. It is also found that the surface potential of c-Si is controlled by the shallow Cat-doping and that the surface recombination velocity of minority carriers in c-Si can be enormously lowered by this potential control.

  18. Silicon-doped boron nitride coated fibers in silicon melt infiltrated composites

    DOEpatents

    Corman, Gregory Scot; Luthra, Krishan Lal

    2002-01-01

    A fiber-reinforced silicon-silicon carbide matrix composite having improved oxidation resistance at high temperatures in dry or water-containing environments is produced. The invention also provides a method for protecting the reinforcing fibers in the silicon-silicon carbide matrix composites by coating the fibers with a silicon-doped boron nitride coating.

  19. Silicon-doped boron nitride coated fibers in silicon melt infiltrated composites

    DOEpatents

    Corman, Gregory Scot; Luthra, Krishan Lal

    1999-01-01

    A fiber-reinforced silicon--silicon carbide matrix composite having improved oxidation resistance at high temperatures in dry or water-containing environments is produced. The invention also provides a method for protecting the reinforcing fibers in the silicon--silicon carbide matrix composites by coating the fibers with a silicon-doped boron nitride coating.

  20. Controlled in situ boron doping of short silicon nanowires grown by molecular beam epitaxy

    SciTech Connect

    Das Kanungo, Pratyush; Zakharov, Nikolai; Bauer, Jan; Breitenstein, Otwin; Werner, Peter; Goesele, Ulrich

    2008-06-30

    Epitaxial silicon nanowires (NWs) of short heights ({approx}280 nm) on Si <111> substrate were grown and doped in situ with boron on a concentration range of 10{sup 15}-10{sup 19} cm{sup -3} by coevaporation of atomic Si and B by molecular beam epitaxy. Transmission electron microscopy revealed a single-crystalline structure of the NWs. Electrical measurements of the individual NWs confirmed the doping. However, the low doped (10{sup 15} cm{sup -3}) and medium doped (3x10{sup 16} and 1x10{sup 17} cm{sup -3}) NWs were heavily depleted by the surface states while the high doped (10{sup 18} and 10{sup 19} cm{sup -3}) ones showed volume conductivities expected for the corresponding intended doping levels.

  1. Surface reactions, hydride kinetics and in situ boron doping of silicon and germanium

    NASA Astrophysics Data System (ADS)

    Gong, Bin

    1999-11-01

    A first principal model was developed for boron in situ doping during chemical vapor deposition, to explain and qualitatively predict the effect boron has on Si film growth rate. The study explored H2 desorption from Si(100), B/Si(100), Ge(100), B/Ge(100), and ion-roughened Si(100) surfaces. Diborane was chosen as the boron source. Hydrogen desorption from Si(100) surfaces with extremely low boron coverage (thetaB < 0.01 ML) showed there is no electronic effect leading to a lower energy monohydride or dihydride desorption state. Hydrogen desorption from B/Si(100) and B/Ge(100) containing 0.04 ML < thetaB < 0.5 ML reveals a boron-weakened trihydride state formation and induces a low temperature H2 desorption state. Boron is also shown to deactivate dangling bonds and inhibit adsorption of H. Growth rate changes with boron coverage are described using the trihydride state and deactivated dangling bonds.

  2. Band gap-tunable potassium doped graphitic carbon nitride with enhanced mineralization ability.

    PubMed

    Hu, Shaozheng; Li, Fayun; Fan, Zhiping; Wang, Fei; Zhao, Yanfeng; Lv, Zhenbo

    2015-01-21

    Band gap-tunable potassium doped graphitic carbon nitride with enhanced mineralization ability was prepared using dicyandiamide monomer and potassium hydrate as precursors. X-ray diffraction (XRD), N2 adsorption, UV-Vis spectroscopy, Fourier transform infrared (FT-IR) spectroscopy, scanning electron microscopy (SEM), photoluminescence (PL) and X-ray photoelectron spectroscopy (XPS) were used to characterize the prepared catalysts. The CB and VB potentials of graphitic carbon nitride could be tuned from -1.09 and +1.56 eV to -0.31 and +2.21 eV by controlling the K concentration. Besides, the addition of potassium inhibited the crystal growth of graphitic carbon nitride, enhanced the surface area and increased the separation rate for photogenerated electrons and holes. The visible-light-driven Rhodamine B (RhB) photodegradation and mineralization performances were significantly improved after potassium doping. A possible influence mechanism of the potassium concentration on the photocatalytic performance was proposed.

  3. The influence of boron-doping on the effectiveness of grain boundary hardening in Ni{sub 3}Al

    SciTech Connect

    Lee, C.S.; Lai, J.K.L.; Han, G.W. |; Smallman, R.E.; Feng, D.

    1999-04-23

    The influence of boron-doping on the effectiveness of grain boundary hardening in Ni{sub 3}Al has been investigated by measuring microhardness profiles across grain boundaries of binary and boron-doped Ni{sub 3}Al bicrystals. It was found that although boron gives rise to significant solution strengthening in Ni{sub 3}Al, the effectiveness of grain boundary hardening in Ni{sub 3}Al is lessened by the addition of boron. Furthermore, the contribution of grain boundary hardening to the overall strength decreases as the segregation extent of boron at the grain boundary increases. A theoretical model of grain boundary hardening considering the various effects of boron-doping has been developed. Application of the model can deconvolute the individual effects of boron-doping on solution hardening, distribution of microcavities along grain boundaries and the interaction of dislocations on different slip systems. Analyzing the experimental results with the model suggests that boron-doping can (1) improve the transfer efficiency of shear stress across a grain boundary by reducing the amount of microcavities along the grain boundary; (2) suppress the hardening effect from the interaction of dislocations moving on different slip systems; and (3) cause a significant solution hardening effect.

  4. Adsorption of sugars on Al- and Ga-doped boron nitride surfaces: A computational study

    NASA Astrophysics Data System (ADS)

    Darwish, Ahmed A.; Fadlallah, Mohamed M.; Badawi, Ashraf; Maarouf, Ahmed A.

    2016-07-01

    Molecular adsorption on surfaces is a key element for many applications, including sensing and catalysis. Non-invasive sugar sensing has been an active area of research due to its importance to diabetes care. The adsorption of sugars on a template surface study is at the heart of matter. Here, we study doped hexagonal boron nitride sheets (h-BNNs) as adsorbing and sensing template for glucose and glucosamine. Using first principles calculations, we find that the adsorption of glucose and glucosamine on h-BNNs is significantly enhanced by the substitutional doping of the sheet with Al and Ga. Including long range van der Waals corrections gives adsorption energies of about 2 eV. In addition to the charge transfer occurring between glucose and the Al/Ga-doped BN sheets, the adsorption alters the size of the band gap, allowing for optical detection of adsorption. We also find that Al-doped boron nitride sheet is better than Ga-doped boron nitride sheet to enhance the adsorption energy of glucose and glucosamine. The results of our work can be potentially utilized when designing support templates for glucose and glucosamine.

  5. Cat-doping: Novel method for phosphorus and boron shallow doping in crystalline silicon at 80 °C

    SciTech Connect

    Matsumura, Hideki; Hayakawa, Taro; Ohta, Tatsunori; Nakashima, Yuki; Miyamoto, Motoharu; Thi, Trinh Cham; Koyama, Koichi; Ohdaira, Keisuke

    2014-09-21

    Phosphorus (P) or boron (B) atoms can be doped at temperatures as low as 80 to 350 °C, when crystalline silicon (c-Si) is exposed only for a few minutes to species generated by catalytic cracking reaction of phosphine (PH₃) or diborane (B₂H₆) with heated tungsten (W) catalyzer. This paper is to investigate systematically this novel doping method, “Cat-doping”, in detail. The electrical properties of P or B doped layers are studied by the Van der Pauw method based on the Hall effects measurement. The profiles of P or B atoms in c-Si are observed by secondary ion mass spectrometry mainly from back side of samples to eliminate knock-on effects. It is confirmed that the surface of p-type c-Si is converted to n-type by P Cat-doping at 80 °C, and similarly, that of n-type c-Si is to p-type by B Cat-doping. The doping depth is as shallow as 5 nm or less and the electrically activated doping concentration is 10¹⁸ to 10¹⁹cm⁻³ for both P and B doping. It is also found that the surface potential of c-Si is controlled by the shallow Cat-doping and that the surface recombination velocity of minority carriers in c-Si can be enormously lowered by this potential control.

  6. Structural, electronic and magnetic properties of carbon doped boron nitride nanowire: Ab initio study

    NASA Astrophysics Data System (ADS)

    Jalilian, Jaafar; Kanjouri, Faramarz

    2016-11-01

    Using spin-polarized density functional theory calculations, we demonstrated that carbon doped boron nitride nanowire (C-doped BNNW) has diverse electronic and magnetic properties depending on position of carbon atoms and their percentages. Our results show that only when one carbon atom is situated on the edge of the nanowire, C-doped BNNW is transformed into half-metal. The calculated electronic structure of the C-doped BNNW suggests that doping carbon can induce localized edge states around the Fermi level, and the interaction among localized edge states leads to semiconductor to half-metal transition. Overall, the bond reconstruction causes of appearance of different electronic behavior such as semiconducting, half-metallicity, nonmagnetic metallic, and ferromagnetic metallic characters. The formation energy of the system shows that when a C atom is doped on surface boron site, system is more stable than the other positions of carbon impurity. Our calculations show that C-doped BNNW may offer unique opportunities for developing nanoscale spintronic materials.

  7. Boron

    Technology Transfer Automated Retrieval System (TEKTRAN)

    Boron is an essential micronutrient element required for plant growth. Boron deficiency is wide-spread in crop plants throughout the world especially in coarse-textured soils in humid areas. Boron toxicity can also occur, especially in arid regions under irrigation. Plants respond directly to the...

  8. Analytical and experimental studies of graphite-epoxy and boron-epoxy angle ply laminates in compression

    NASA Technical Reports Server (NTRS)

    Weller, T.

    1977-01-01

    The applicability and adequacy of several computer techniques in predicting satisfactorily the nonlinear/inelastic response of angle ply laminates were evaluated. The analytical predictions were correlated with the results of a test program on the inelastic response under axial compression of a large variety of graphite-epoxy and boron-epoxy angle ply laminates. These comparison studies indicate that neither of the abovementioned analyses can satisfactorily predict either the mode of response or the ultimate stress value corresponding to a particular angle ply laminate configuration. Consequently, also the simple failure mechanisms assumed in the analytical models were not verified.

  9. Boron-Doped Strontium-Stabilized Bismuth Cobalt Oxide Thermoelectric Nanocrystalline Ceramic Powders Synthesized via Electrospinning

    NASA Astrophysics Data System (ADS)

    Koçyiğit, Serhat; Aytimur, Arda; Çınar, Emre; Uslu, İbrahim; Akdemir, Ahmet

    2014-01-01

    Boron-doped strontium-stabilized bismuth cobalt oxide thermoelectric nanocrystalline ceramic powders were produced by using a polymeric precursor technique. The powders were characterized by using x-ray diffraction (XRD), scanning electron microscopy (SEM), and physical properties measurement system (PPMS) techniques. The XRD results showed that these patterns have a two-phase mixture. The phases are face-centered cubic (fcc) and body-centered cubic (bcc). Values of the crystallite size, dislocation density, and microstrain were calculated by using the Scherrer equation. The lattice parameters were calculated for fcc and bcc phases. The SEM results showed that needle-like grains are formed in boron-undoped composite materials, but the needle-like grains changed to the plate-like grains with the addition of boron. The distribution of the nanofiber diameters was calculated and the average diameter of the boron-doped sample is smaller than the boron-undoped one. PPMS values showed that the electrical resistivity values decreased, but the thermal conductivity values, the Seebeck coefficients, and figure of merit ( ZT) increased with increasing temperature for the two samples.

  10. Influence of oxygen on defect production in electron-irradiated, boron-doped silicon

    NASA Technical Reports Server (NTRS)

    Deangelis, H. M.; Drevinsky, P. J.

    1984-01-01

    Deep level transient spectroscopy (DLTS) measurements were made on float-zone and crucible-grown, boron-doped silicon irradiated with 1-MeV electrons. The minority carrier trap attributed to a boron-related state, was not seen in low-resistivity, float-zone silicon. However, a new majority carrier trap was observed in these samples. In the case of more lightly doped material the minority carrier trap was present, and its introduction rate was lower in float-zone than in crucible-grown silicon. For 1- and 10-ohm-cm float-zone material that was oxidized during processing, the introduction rates for this trap were comparable to those for crucible-grown silicon. This behavior indicates that the minority carrier trap involves oxygen and that it may be due to a boron-oxygen complex. The majority carrier trap seen in heavily doped, float-zone silicon may also involve boron but not oxygen. Observed trap concentrations suggest that oxygen content in the regions examined by DLTS is affected by processing techniques. Other differences were observed in defect production and annealing behavior of electron-irradiated, float-zone and crucible-grown silicon.

  11. Palladium nanoparticles supported on titanium doped graphitic carbon nitride for formic acid dehydrogenation.

    PubMed

    Wu, Yongmei; Wen, Meicheng; Navlani-García, Miriam; Kuwahara, Yasutaka; Mori, Kohsuke; Yamashita, Hiromi

    2017-02-28

    Pd nanoparticles (NPs) supported on Ti-doped graphitic carbon nitride (g-C₃N₄) were synthetised by a deposition-precipitation route and a subsequent reduction with NaBH₄. The features of Pd supported Ti-doped g-C₃N₄ were studied by XRD, TEM, FT-IR, XPS, EXAFS and N₂ physisorption measurements. It was found that the NPs had an average size of 2.9 nm and presented a high dispersion on the surface of Ti-doped g-C₃N₄. Compared with Pd loaded on pristine g-C₃N₄, Pd NPs supported Ti-doped g-C₃N₄ catalyst exhibited a high activity in formic acid dehydrogenation in water at room temperature. The enhanced activity can be attributed to the small Pd NPs size as well as the strong interaction between Pd NPs and Ti-doped g-C₃N₄.

  12. Photo-induced Modulation Doping in Graphene/Boron nitride Heterostructures

    NASA Astrophysics Data System (ADS)

    Velasco, Jairo, Jr.; Ju, Long; Hwang, Edwin; Kahn, Salman; Nosiglia, Casey; Tsai, Hsin-Zon; Yang, Wei; Zhang, Guangyu; Taniguchi, Takashi; Watanabe, Kenji; Zhang, Yuanbo; Crommie, Michael; Zettl, Alex; Wang, Feng

    2014-03-01

    Van der Waals heterostructures (VDH) provide an exciting new platform for materials engineering, where a variety of layered materials with different electrical, optical and mechanical responses can be stacked together to enable new physics and novel functionalities. We report an emerging optoelectronic phenomenon (i.e. photo-induced modulation doping) in the graphene-boron nitride VDH (G/BN heterostructure). We find it enables flexible and repeatable writing and erasing of charge doping in graphene with optical light. We show that the photo-induced modulation doping maintains the remarkable carrier mobility of the G/BN heterostructure, and it can be used to generate spatially varying doping profiles like pn junctions. Our work contributes towards understanding light matter interactions in VDHs, and introduces a simple technique for creating inhomogeneous doping in high mobility graphene devices. J. Velasco Jr. acknowledges support from UC President's Postdoctoral Fellowship.

  13. Post-synthesis carbon doping of individual multiwalled boron nitride nanotubes via electron-beam irradiation.

    PubMed

    Wei, Xianlong; Wang, Ming-Sheng; Bando, Yoshio; Golberg, Dmitri

    2010-10-06

    We report on post-synthesis carbon doping of individual boron nitride nanotubes (BNNTs) via in situ electron-beam irradiation inside an energy-filtering 300 keV high-resolution transmission electron microscope. The substitution of C for B and N atoms in the honeycomb lattice was demonstrated through electron energy loss spectroscopy, spatially resolved energy-filtered elemental mapping, and in situ electrical measurements. Substitutional C doping transformed BNNTs from electrical insulators to conductors. In comparison with the existing post-synthesis doping methods for nanoscale materials (e.g., ion implantation and diffusion), the discovered electron-beam-induced doping is a well-controlled, little-damaging, room-temperature, and simple strategy that is expected to demonstrate great promise for post-synthesis doping of diverse nanomaterials in the future.

  14. Electroanalysis of tetracycline using nickel-implanted boron-doped diamond thin film electrode applied to flow injection system.

    PubMed

    Treetepvijit, Surudee; Chuanuwatanakul, Suchada; Einaga, Yasuaki; Sato, Rika; Chailapakult, Orawon

    2005-05-01

    The electrochemical analysis of tetracycline was investigated using nickel-implanted boron-doped diamond thin film electrode by cyclic voltammetry and amperometry with a flow injection system. Cyclic voltammetry was used to study the electrochemical oxidation of tetracycline. Comparison experiments were carried out using as-deposited boron-doped diamond thin film electrode (BDD). Nickel-implanted boron-doped diamond thin film electrode (Ni-DIA) provided well-resolved oxidation irreversible cyclic voltammograms. The current signals were higher than those obtained using the as-deposited BDD electrode. Results using nickel-implanted boron-doped diamond thin film electrode in flow injection system coupled with amperometric detection are presented. The optimum potential for tetracycline was 1.55 V versus Ag/AgCl. The linear range of 1.0 to 100 microM and the detection limit of 10 nM were obtained. In addition, the application for drug formulation was also investigated.

  15. Sulfur-doped graphene via thermal exfoliation of graphite oxide in H2S, SO2, or CS2 gas.

    PubMed

    Poh, Hwee Ling; Šimek, Petr; Sofer, Zdeněk; Pumera, Martin

    2013-06-25

    Doping of graphene with heteroatoms is an effective way to tailor its properties. Here we describe a simple and scalable method of doping graphene lattice with sulfur atoms during the thermal exfoliation process of graphite oxides. The graphite oxides were first prepared by Staudenmaier, Hofmann, and Hummers methods followed by treatments in hydrogen sulfide, sulfur dioxide, or carbon disulfide. The doped materials were characterized by scanning electron microscopy, high-resolution X-ray photoelectron spectroscopy, combustible elemental analysis, and Raman spectroscopy. The ζ-potential and conductivity of sulfur-doped graphenes were also investigated in this paper. It was found that the level of doping is more dramatically influenced by the type of graphite oxide used rather than the type of sulfur-containing gas used during exfoliation. Resulting sulfur-doped graphenes act as metal-free electrocatalysts for an oxygen reduction reaction.

  16. Cobalt-doped graphitic carbon nitride photocatalysts with high activity for hydrogen evolution

    NASA Astrophysics Data System (ADS)

    Chen, Pei-Wen; Li, Kui; Yu, Yu-Xiang; Zhang, Wei-De

    2017-01-01

    Cobalt-doped graphitic carbon nitride (Cosbnd CN) was synthesized by one-step thermal polycondensation using cobalt phthalocyanine (CoPc) and melamine as precursors. The π-π interaction between melamine and CoPc promotes cobalt doping into the framework of g-C3N4. The prepared samples were carefully characterized and the results demonstrated that Co-doped graphitic carbon nitride inhibited the crystal growth of graphitic carbon nitride (CN), leading to larger specific surface area (33.1 m2 g-1) and abundant Co-Nx active sites, narrower band gap energy and more efficient separation of photogenerated electrons and holes. 0.46% Cosbnd CN exhibited higher hydrogen evolution rate (28.0 μmol h-1) under visible light irradiation, which is about 3.0 times of that over the pure CN and about 2.2 times of that over cobalt-doped CN using CoCl2 • 6H2O as a cobalt source. This study provides a valuable strategy to modify CN with enhanced photocatalytic performance.

  17. Synthesis of ultrathin nitrogen-doped graphitic carbon nanocages as advanced electrode materials for supercapacitor.

    PubMed

    Tan, Yueming; Xu, Chaofa; Chen, Guangxu; Liu, Zhaohui; Ma, Ming; Xie, Qingji; Zheng, Nanfeng; Yao, Shouzhuo

    2013-03-01

    Synthesis of nitrogen-doped carbons with large surface area, high conductivity, and suitable pore size distribution is highly desirable for high-performance supercapacitor applications. Here, we report a novel protocol for template synthesis of ultrathin nitrogen-doped graphitic carbon nanocages (CNCs) derived from polyaniline (PANI) and their excellent capacitive properties. The synthesis of CNCs involves one-pot hydrothermal synthesis of Mn3O4@PANI core-shell nanoparticles, carbonization to produce carbon coated MnO nanoparticles, and then removal of the MnO cores by acidic treatment. The CNCs prepared at an optimum carbonization temperature of 800 °C (CNCs-800) have regular frameworks, moderate graphitization, high specific surface area, good mesoporosity, and appropriate N doping. The CNCs-800 show high specific capacitance (248 F g(-1) at 1.0 A g(-1)), excellent rate capability (88% and 76% capacitance retention at 10 and 100 A g(-1), respectively), and outstanding cycling stability (~95% capacitance retention after 5000 cycles) in 6 M KOH aqueous solution. The CNCs-800 can also exhibit great pseudocapacitance in 0.5 M H2SO4 aqueous solution besides the large electrochemical double-layer capacitance. The excellent capacitance performance coupled with the facile synthesis of ultrathin nitrogen-doped graphitic CNCs indicates their great application potential in supercapacitors.

  18. Carbon doping in molecular beam epitaxy of GaAs from a heated graphite filament

    NASA Technical Reports Server (NTRS)

    Malik, R. J.; Nottenberg, R. N.; Schubert, E. F.; Walker, J. F.; Ryan, R. W.

    1988-01-01

    Carbon doping of GaAs grown by molecular beam epitaxy has been obtained for the first time by use of a heated graphite filament. Controlled carbon acceptor concentrations over the range of 10 to the 17th-10 to the 20th/cu cm were achieved by resistively heating a graphite filament with a direct current power supply. Capacitance-voltage, p/n junction and secondary-ion mass spectrometry measurements indicate that there is negligible diffusion of carbon during growth and with postgrowth rapid thermal annealing. Carbon was used for p-type doping in the base of Npn AlGaAs/GaAs heterojunction bipolar transistors. Current gains greater than 100 and near-ideal emitter heterojunctions were obtained in transistors with a carbon base doping of 1 x 10 to the 19th/cu cm. These preliminary results indicate that carbon doping from a solid graphite source may be an attractive substitute for beryllium, which is known to have a relatively high diffusion coefficient in GaAs.

  19. Low temperature growth of heavy boron-doped hydrogenated Ge epilayers and its application in Ge/Si photodetectors

    NASA Astrophysics Data System (ADS)

    Kuo, Wei-Cheng; Lee, Ming Jay; Wu, Mount-Learn; Lee, Chien-Chieh; Tsao, I.-Yu; Chang, Jenq-Yang

    2017-04-01

    In this study, heavily boron-doped hydrogenated Ge epilayers are grown on Si substrates at a low growth temperature (220 °C). The quality of the boron-doped epilayers is dependent on the hydrogen flow rate. The optical emission spectroscopic, X-ray diffraction and Hall measurement results demonstrate that better quality boron-doped Ge epilayers can be obtained at low hydrogen flow rates (0 sccm). This reduction in quality is due to an excess of hydrogen in the source gas, which breaks one of the Ge-Ge bonds on the Ge surface, leading to the formation of unnecessary dangling bonds. The structure of the boron doped Ge epilayers is analyzed by transmission electron microscopy and atomic force microscopy. In addition, the performance, based on the I-V characteristics, of Ge/Si photodetectors fabricated with boron doped Ge epilayers produced under different hydrogen flow rates was examined. The photodetectors with boron doped Ge epilayers produced with a low hydrogen flow rate (0 sccm) exhibited a higher responsivity of 0.144 A/W and a lower dark current of 5.33 × 10-7 A at a reverse bias of 1 V.

  20. Effects of Oxidation on Oxidation-Resistant Graphite

    SciTech Connect

    Windes, William; Smith, Rebecca; Carroll, Mark

    2015-05-01

    The Advanced Reactor Technology (ART) Graphite Research and Development Program is investigating doped nuclear graphite grades that exhibit oxidation resistance through the formation of protective oxides on the surface of the graphite material. In the unlikely event of an oxygen ingress accident, graphite components within the VHTR core region are anticipated to oxidize so long as the oxygen continues to enter the hot core region and the core temperatures remain above 400°C. For the most serious air-ingress accident which persists over several hours or days the continued oxidation can result in significant structural damage to the core. Reducing the oxidation rate of the graphite core material during any air-ingress accident would mitigate the structural effects and keep the core intact. Previous air oxidation testing of nuclear-grade graphite doped with varying levels of boron-carbide (B4C) at a nominal 739°C was conducted for a limited number of doped specimens demonstrating a dramatic reduction in oxidation rate for the boronated graphite grade. This report summarizes the conclusions from this small scoping study by determining the effects of oxidation on the mechanical strength resulting from oxidation of boronated and unboronated graphite to a 10% mass loss level. While the B4C additive did reduce mechanical strength loss during oxidation, adding B4C dopants to a level of 3.5% or more reduced the as-fabricated compressive strength nearly 50%. This effectively minimized any benefits realized from the protective film formed on the boronated grades. Future work to infuse different graphite grades with silicon- and boron-doped material as a post-machining conditioning step for nuclear components is discussed as a potential solution for these challenges in this report.

  1. Effects of Sulfur Doping and Humidity on CO2 Capture by Graphite Split Pore: A Theoretical Study.

    PubMed

    Li, Xiaofang; Xue, Qingzhong; Chang, Xiao; Zhu, Lei; Ling, Cuicui; Zheng, Haixia

    2017-03-08

    By use of grand canonical Monte Carlo calculations, we study the effects of sulfur doping and humidity on the performance of graphite split pore as an adsorbent for CO2 capture. It is demonstrated that S doping can greatly enhance pure CO2 uptake by graphite split pore. For example, S-graphite split pore with 33.12% sulfur shows a 39.85% rise in pure CO2 uptake (51.001 mmol/mol) compared with pristine graphite split pore at 300 K and 1 bar. More importantly, it is found that S-graphite split pore can still maintain much higher CO2 uptake than that by pristine graphite split pore in the presence of water. Especially, uptake by 33.12% sulfur-doped S-graphite split pore is 51.963 mmol of CO2/mol in the presence of water, which is 44.34% higher than that by pristine graphite split pore at 300 K and 1 bar. In addition, CO2/N2 selectivity of S-graphite split pore increases with increasing S content, resulting from stronger interactions between CO2 and S-graphite split pore. Moreover, by use of density functional theory calculations, we demonstrate that S doping can enhance adsorption energy between CO2 molecules and S-graphene surface at different humidities and furthermore enhance CO2 uptake by S-graphite split pore. Our results indicate that S-graphite split pore is a promising adsorbent material for humid CO2 capture.

  2. Interstitial Boron-Doped TiO2 Thin Films: The Significant Effect of Boron on TiO2 Coatings Grown by Atmospheric Pressure Chemical Vapor Deposition.

    PubMed

    Quesada-González, Miguel; Boscher, Nicolas D; Carmalt, Claire J; Parkin, Ivan P

    2016-09-28

    The work presented here describes the preparation of transparent interstitial boron-doped TiO2 thin-films by atmospheric pressure chemical vapor deposition (APCVD). The interstitial boron-doping, on TiO2, proved by X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD), is shown to enhance the crystallinity and significantly improve the photocatalytic activity of the TiO2 films. The synthesis, highly suitable for a reel-to-reel process, has been carried out in one step.

  3. Effect of boron doping on optical properties of sol-gel based nanostructured zinc oxide films on glass

    SciTech Connect

    Jana, Sunirmal; Vuk, Angela Surca; Mallick, Aparajita; Orel, Boris; Biswas, Prasanta Kumar

    2011-12-15

    Graphical abstract: Room temperature fine structured UV-vis PL emissions (a) as phonon replicas in 1 at.% boron doped film originated from LO phonon evidenced from Near Grazing Incidence Angle (NGIA) IR spectral study (b). Highlights: Black-Right-Pointing-Pointer Sol-gel based boron doped nanostructured ZnO thin films deposited on pure silica glass using crystalline boric acid as boron source. Black-Right-Pointing-Pointer Observed first time, room temperature fine structured PL emissions in 1 at.% doped film as phonon replicas originated from LO phonon (both IR and Raman active). Black-Right-Pointing-Pointer Boron doping controls the LO phonon energy in addition to visible reflection, band gap and grain size. Black-Right-Pointing-Pointer The films possessed mixed crystal phases with hexagonal as major phase. -- Abstract: Boron doped zinc oxide thin films ({approx}80 nm) were deposited onto pure silica glass by sol-gel dip coating technique from the precursor sol/solution of 4.0 wt.% equivalent oxide content. The boron concentration was varied from 0 to 2 at.% w.r.t. Zn using crystalline boric acid. The nanostructured feature of the films was visualized by FESEM images and the largest cluster size of ZnO was found in 1 at.% boron doped film (B1ZO). The presence of mixed crystal phases with hexagonal as major phase was identified from XRD reflections of the films. Particle size, optical band gap, visible specular reflection, room temperature photoluminescence (PL) emissions (3.24-2.28 eV), infra-red (IR) and Raman active longitudinal optical (LO) phonon vibration were found to be dependent on dopant concentration. For the first time, we report the room temperature fine structured PL emissions as phonon replicas originated from the LO phonon (both IR and Raman active) in 1 at.% boron doped zinc oxide film.

  4. Properties of boron-doped ZnO thin films grown by using MOCVD

    NASA Astrophysics Data System (ADS)

    Choi, In-Hwan

    2013-11-01

    Boron-doped ZnO thin films were prepared by using metal organic chemical-vapor deposition (MOCVD) with diethyl zinc and water as precursors and B2H6 as the dopant gas. The effects of the flow rates of H2O and B2H6 on the growth and the electrical properties of boron-doped ZnO thin film were investigated. The maximum carrier concentration and mobility and the minimum resistivity obtained under these experimental conditions were 7 × 1020 /cm3, 42 cm2 /V·sec and 4 × 10-4 Ω·cm, respectively, at room temperature. The electrical properties, growth rates, transmittances, and surface morphologies of the ZnO:B films grown using MOCVD are strongly affected by growth conditions such as the relative flow rates of the precursors and dopant gases and the chamber pressure, and these effects are discussed in detail in this article.

  5. Electrochemical mineralization pathway of quinoline by boron-doped diamond anodes.

    PubMed

    Wang, Chunrong; Ma, Keke; Wu, Tingting; Ye, Min; Tan, Peng; Yan, Kecheng

    2016-04-01

    Boron-doped diamond anodes were selected for quinoline mineralization, and the resulting intermediates, phenylpropyl aldehyde, phenylpropionic acid, and nonanal were identified and followed during quinoline oxidation by gas chromatography-mass spectrometry and high-performance liquid chromatography. The evolutions of formic acid, acetic acid, oxalic acid, NO2(-), NO3(-), and NH4(+) were quantified. A new reaction pathway for quinoline mineralization by boron-doped diamond anodes has been proposed, where the pyridine ring in quinoline is cleaved by a hydroxyl radical giving phenylpropyl aldehyde and NH4(+). Phenylpropyl aldehyde is quickly oxidized into phenylpropionic acid, and the benzene ring is cleaved giving nonanal. This is further oxidized to formic acid, acetic acid, and oxalic acid. Finally, these organic intermediates are mineralized to CO2 and H2O. NH4(+) is also oxidized to NO2(-) and on to NO3(-). The results will help to gain basic reference for clearing intermediates and their toxicity.

  6. Characterization of boron doped diamond-like carbon film by HRTEM

    NASA Astrophysics Data System (ADS)

    Li, X. J.; He, L. L.; Li, Y. S.; Yang, Q.; Hirose, A.

    2015-12-01

    Boron doped diamond-like carbon (B-DLC) film was synthesized on silicon (1 0 0) wafer by biased target ion beam deposition. High-resolution transmission electron microscopy (HRTEM) is employed to investigate the microstructure of the B-DLC thin film in cross-sectional observation. Many crystalline nanoparticles randomly dispersed and embedded in the amorphous matrix film are observed. Through chemical compositional analysis of the B-DLC film, some amount of O element is confirmed to be contained. And also, some nanoparticles with near zone axes are indexed, which are accordance with B2O phase. Therefore, the contained O element causing the B element oxidized is proposed, resulting in the formation of the nanoparticles. Our work indicates that in the B-DLC film a significant amount of the doped B element exists as boron suboxide nanoparticles.

  7. Hydrogenation effects on carrier transport in boron-doped ultrananocrystalline diamond/amorphous carbon films prepared by coaxial arc plasma deposition

    SciTech Connect

    Katamune, Yūki Takeichi, Satoshi; Ohmagari, Shinya; Yoshitake, Tsuyoshi

    2015-11-15

    Boron-doped ultrananocrystalline diamond/hydrogenated amorphous carbon composite (UNCD/a-C:H) films were deposited by coaxial arc plasma deposition with a boron-blended graphite target at a base pressure of <10{sup −3} Pa and at hydrogen pressures of ≤53.3 Pa. The hydrogenation effects on the electrical properties of the films were investigated in terms of chemical bonding. Hydrogen-scattering spectrometry showed that the maximum hydrogen content was 35 at. % for the film produced at 53.3-Pa hydrogen pressure. The Fourier-transform infrared spectra showed strong absorptions by sp{sup 3} C–H bonds, which were specific to the UNCD/a-C:H, and can be attributed to hydrogen atoms terminating the dangling bonds at ultrananocrystalline diamond grain boundaries. Temperature-dependence of the electrical conductivity showed that the films changed from semimetallic to semiconducting with increasing hydrogen pressure, i.e., with enhanced hydrogenation, probably due to hydrogenation suppressing the formation of graphitic bonds, which are a source of carriers. Carrier transport in semiconducting hydrogenated films can be explained by a variable-range hopping model. The rectifying action of heterojunctions comprising the hydrogenated films and n-type Si substrates implies carrier transport in tunneling.

  8. Local impedance imaging of boron-doped polycrystalline diamond thin films

    SciTech Connect

    Zieliński, A.; Ryl, J.; Burczyk, L.; Darowicki, K.

    2014-09-29

    Local impedance imaging (LII) was used to visualise surficial deviations of AC impedances in polycrystalline boron-doped diamond (BDD). The BDD thin film electrodes were deposited onto the highly doped silicon substrates via microwave plasma-enhanced CVD. The studied boron dopant concentrations, controlled by the [B]/[C] ratio in plasma, ranged from 1 × 10{sup 16} to 2 × 10{sup 21} atoms cm{sup −3}. The BDD films displayed microcrystalline structure, while the average size of crystallites decreased from 1 to 0.7 μm with increasing [B]/[C] ratios. The application of LII enabled a direct and high-resolution investigation of local distribution of impedance characteristics within the individual grains of BDD. Such an approach resulted in greater understanding of the microstructural control of properties at the grain level. We propose that the obtained surficial variation of impedance is correlated to the areas of high conductance which have been observed at the grain boundaries by using LII. We also postulate that the origin of high conductivity is due to either preferential boron accumulation, the presence of defects, or sp{sup 2} regions in the intragrain regions. The impedance modulus recorded by LII was in full agreement with the bulk impedance measurements. Both variables showed a decreasing trend with increasing [B]/[C] ratios, which is consistent with higher boron incorporation into BDD film.

  9. Synthesis of boron, nitrogen co-doped porous carbon from asphaltene for high-performance supercapacitors

    NASA Astrophysics Data System (ADS)

    Zhou, Ying; Wang, Dao-Long; Wang, Chun-Lei; Jin, Xin-Xin; Qiu, Jie-Shan

    2014-08-01

    Oxidized asphaltene (OA), a thermosetting material with plenty of functional groups, is synthesized from asphaltene (A) using HNO3/H2SO4 as the oxidizing agent. Boron, nitrogen co-doped porous carbon (BNC—OA) is prepared by carbonization of the mixture of boric acid and OA at 1173 K in an argon atmosphere. X-ray photoelectron spectroscopy (XPS) characterization reveals that the BNC—OA has a nitrogen content of 3.26 at.% and a boron content of 1.31 at.%, while its oxidation-free counterpart (BNC—SA) has a nitrogen content of 1.61 at.% and a boron content of 3.02 at.%. The specific surface area and total pore volume of BNC—OA are 1103 m2·g-1 and 0.921 cm3·g-1, respectively. At a current density of 0.1 A·g-1, the specific capacitance of BNC-OA is 335 F·g-1 and the capacitance retention can still reach 83% at 1 A·g-1. The analysis shows that the superior electrochemical performance of the BNC—OA is attributed to the pseudocapacitance behavior of surface heteroatom functional groups and an abundant pore-structure. Boron, nitrogen co-doped porous carbon is a promising electrode material for supercapacitors.

  10. Boron doped ZnO embedded into reduced graphene oxide for electrochemical supercapacitors

    NASA Astrophysics Data System (ADS)

    Alver, Ü.; Tanrıverdi, A.

    2016-08-01

    In this work, reduced graphene oxide/boron doped zinc oxide (RGO/ZnO:B) composites were fabricated by a hydrothermal process and their electrochemical properties were investigated as a function of dopant concentration. First, boron doped ZnO (ZnO:B) particles was fabricated with different boron concentrations (5, 10, 15 and 20 wt%) and then ZnO:B particles were embedded into RGO sheets. The physical properties of sensitized composites were characterized by XRD and SEM. Characterization indicated that the ZnO:B particles with plate-like structure in the composite were dispersed on graphene sheets. The electrochemical properties of the RGO/ZnO:B composite were investigated through cyclic voltammetry, galvanostatic charge/discharge measurements in a 6 M KOH electrolyte. Electrochemical measurements show that the specific capacitance values of RGO/ZnO:B electrodes increase with increasing boron concentration. RGO/ZnO:B composite electrodes (20 wt% B) display the specific capacitance as high as 230.50 F/g at 5 mV/s, which is almost five times higher than that of RGO/ZnO (52.71 F/g).

  11. High-Performance Organic Light Emitting Diode with Substitutionally Boron-doped Graphene Anode.

    PubMed

    Wu, Tien-Lin; Yeh, Chao-Hui; Hsiao, Wen-Ting; Huang, Pei-Yun; Huang, Min-Jie; Chiang, Yen-Hsin; Cheng, Chien-Hong; Liu, Rai-Shung; Chiu, Po-Wen

    2017-04-07

    Hole injection barrier between anode and hole injection layer is of critical importance to determine the device performance of organic light-emitting diodes (OLEDs). Here, we report on a record-high external quantum efficiency (24.6 % in green phosphorescence) of OLEDs fabricated on both rigid and flexible substrates, with the performance enhanced by the use of nearly defect-free and high-mobility boron-doped graphene as an effective anode and hexaazatriphenylene hexacarbonitrile as a new type of hole injection layer. This new structure outperforms the existing graphene-based OLEDs, in which MoO3, AuCl3, or bis(trifluoromethanesulfonyl)amide (TFSA) are typically used as a doping source for p-type graphene. The improvement of the OLED performance is attributed mainly to the appreciable increase of hole conductivity in nearly defect-free boron-doped monolayer graphene, along with the high work function achieved by the use of newly developed hydrocarbon precursor containing boron in the graphene growth by chemical vapor deposition.

  12. A Study on Electrolytic Corrosion of Boron-Doped Diamond Electrodes when Decomposing Organic Compounds.

    PubMed

    Kashiwada, Takeshi; Watanabe, Takeshi; Ootani, Yusuke; Tateyama, Yoshitaka; Einaga, Yasuaki

    2016-03-02

    Electrolytic corrosion of boron-doped diamond (BDD) electrodes after applying a high positive potential to decompose organic compounds in aqueous solution was studied. Scanning electron microscopy images, Raman spectra, and glow discharge optical emission spectroscopy revealed that relatively highly boron-doped domains were primarily corroded and relatively low boron-doped domains remained after electrolysis. The corrosion due to electrolysis was observed especially in aqueous solutions of acetic acid or propionic acid, while it was not observed in other organic compounds such as formic acid, glucose, and methanol. Electron spin resonance measurements after electrolysis in the acetic acid solution revealed the generation of methyl radicals on the BDD electrodes. Here, the possible mechanisms for the corrosion are discussed. Dangling bonds may be formed due to abstraction of OH groups from C-OH functional groups by methyl radicals generated on the surface of the BDD electrodes. As a result, the sp(3) diamond structure would be converted to the sp(2) carbon structure, which can be easily etched. Furthermore, to prevent electrolytic corrosion during electrolysis, both the current density and the pH condition in the aqueous solution were optimized. At low current densities or high pH, the BDD electrodes were stable without electrolytic corrosion even in the acetic acid aqueous solution.

  13. Improved Li(+) Storage through Homogeneous N-Doping within Highly Branched Tubular Graphitic Foam.

    PubMed

    Dong, Jinyang; Xue, Yanming; Zhang, Chao; Weng, Qunhong; Dai, Pengcheng; Yang, Yijun; Zhou, Min; Li, Cuiling; Cui, Qiuhong; Kang, Xiaohong; Tang, Chengchun; Bando, Yoshio; Golberg, Dmitri; Wang, Xi

    2017-02-01

    A novel carbon structure, highly branched homogeneous-N-doped graphitic (BNG) tubular foam, is designed via a novel N, N-dimethylformamide (DMF)-mediated chemical vapor deposition method. More structural defects are found at the branched portions as compared with the flat tube domains providing abundant active sites and spacious reservoirs for Li(+) storage. An individual BNG branch nanobattery is constructed and tested using in situ transmission electron microscopy and the lithiation process is directly visualized in real time.

  14. Boron-doped cadmium oxide composite structures and their electrochemical measurements

    SciTech Connect

    Lokhande, B.J.; Ambare, R.C.; Mane, R.S.; Bharadwaj, S.R.

    2013-08-01

    Graphical abstract: Conducting nano-fibrous 3% boron doped cadmium oxide thin films were prepared by SILAR and its super capacitive properties were studied. - Highlights: • Samples are of nanofibrous nature. • All samples shows pseudocapacitive behavior. • 3% B doped CdO shows good specific capacitance. • 3% B doped CdO shows maximum 74.93% efficiency at 14 mA/cm{sup 2}. • 3% B doped CdO shows 0.8 Ω internal resistance. - Abstract: Boron-doped and undoped cadmium oxide composite nanostructures in thin film form were prepared onto stainless steel substrates by a successive ionic layer adsorption and reaction method using aqueous solutions of cadmium nitrate, boric acid and 1% H{sub 2}O{sub 2}. As-deposited films were annealed at 623 K for 1 h. The X-ray diffraction study shows crystalline behavior for both doped and undoped films with a porous topography and nano-wires type architecture, as observed in SEM image. Wettability test confirms the hydrophilic surface with 58° contact angle value. Estimated band gap energy is around 1.9 eV. Electrochemical behavior of the deposited films is attempted in 1 M KOH electrolyte using cyclic voltammetry (CV), electrochemical impedance spectroscopy and galvanostatic charge–discharge tests. Maximum values of the specific capacitance, specific energy and specific power obtained for 3% B doped CdO film at 2 mV/s scan rate are 20.05 F/g, 1.22 Wh/kg and 3.25 kW/kg, respectively.

  15. Structure and electronic structure of S-doped graphitic C3N4 investigated by density functional theory

    NASA Astrophysics Data System (ADS)

    Chen, Gang; Gao, Shang-Peng

    2012-10-01

    The structures of the heptazine-based graphitic C3N4 and the S-doped graphitic C3N4 are investigated by using the density functional theory with a semi-empirical dispersion correction for the weak long-range interaction between layers. The corrugated structure is found to be energetically favorable for both the pure and the S-doped graphitic C3N4. The S doptant is prone to substitute the N atom bonded with only two nearest C atoms. The band structure calculation reveals that this kind of S doping causes a favorable red shift of the light absorption threshold and can improve the electroconductibility and the photocatalytic activity of the graphitic C3N4.

  16. Boron-doped diamond nanograss array for electrochemical sensors.

    PubMed

    Wei, Min; Terashima, Chiaki; Lv, Mei; Fujishima, Akira; Gu, Zhong-Ze

    2009-06-28

    A novel BDD nanograss array has been prepared simply on a heavily doped BDD film by reactive ion etching for use as an electrochemical sensor, which improved the reactive site, promoted the electrocatalytic activity, accelerated the electron transfer, and enhanced the selectivity.

  17. Single crystal diamond boron 'delta doped' nanometric layers for 2D electronic devices (Conference Presentation)

    NASA Astrophysics Data System (ADS)

    Butler, James

    2016-10-01

    Use of diamond as a semiconductor material suffers from the high activation energy of all known impurity dopants (0.37 eV for Boron, 0.6 eV for Phosphorous). To achieve the simultaneous carrier concentration and mobility desired for devices operating at room temperature, growth of a nanometric thick `delta' layer doped to above the metal insulator transition adjacent to high mobility intrinsic material can provide a 2D high mobility conduction layer. Critical to obtaining the enhanced mobility of the carriers in the layer next to the `delta' doped layer is the abruptness of the doping interface. Single and multiple nanometer thick epitaxial layers of heavily boron `delta' doped diamond have been grown on high quality, intrinsic lab grown diamond single crystals. These layers were grown in a custom microwave plasma activated chemical vapor deposition reactor based on a rapid reactant switching technique. Characterization of the `delta' layers by various analytical techniques will be presented. Electrical measurements demonstrating enhanced hole mobility (100 to 800 cm2/V sec) as well as other electrical characterizations will be presented.

  18. Adsorption of Sugars on Al- and Ga-doped Boron Nitride Surfaces: A Computational Study

    NASA Astrophysics Data System (ADS)

    Darwish, Ahmed A.; Fadlallah, Mohamed M.; Badawi, Ashraf; Maarouf, Ahmed A.

    2015-12-01

    Molecular adsorption on surfaces is a key element for many applications, including sensing and catalysis. Non-invasive sugar sensing has been an active area of research due to its importance to diabetes care. The adsorption of sugars on a template surface study is at the heart of matter. Here, we study doped hexagonal boron nitride sheets ($h$-BNNs) as adsorbing and sensing template for glucose and glucosamine. Using first principles calculations, we find that the adsorption of glucose and glucosamine on $h$-BNNs is significantly enhanced by the substitutional doping of the sheet with Al and Ga. Including long range van der Waals corrections gives adsorption energies of about 2 eV. In addition to the charge transfer occurring between glucose and the Al/Ga-doped BN sheets, the adsorption alters the size of the band gap, allowing for optical detection of adsorption. We also find that Al-doped boron nitride sheet is better than Ga-nitride sheet to enhance the adsorption energy of glucose and glucosamine. The results of our work can be potentially utilized when designing support templates for glucose and glucosamine.

  19. Boron-doped graphene quantum dots for selective glucose sensing based on the "abnormal" aggregation-induced photoluminescence enhancement.

    PubMed

    Zhang, Li; Zhang, Zhi-Yi; Liang, Ru-Ping; Li, Ya-Hua; Qiu, Jian-Ding

    2014-05-06

    A hydrothermal approach for the cutting of boron-doped graphene (BG) into boron-doped graphene quantum dots (BGQDs) has been proposed. Various characterizations reveal that the boron atoms have been successfully doped into graphene structures with the atomic percentage of 3.45%. The generation of boronic acid groups on the BGQDs surfaces facilitates their application as a new photoluminescence (PL) probe for label free glucose sensing. It is postulated that the reaction of the two cis-diol units in glucose with the two boronic acid groups on the BGQDs surfaces creates structurally rigid BGQDs-glucose aggregates, restricting the intramolecular rotations and thus resulting in a great boost in the PL intensity. The present unusual "aggregation-induced PL increasing" sensing process excludes any saccharide with only one cis-diol unit, as manifested by the high specificity of BGQDs for glucose over its close isomeric cousins fructose, galactose, and mannose. It is believed that the doping of boron can introduce the GQDs to a new kind of surface state and offer great scientific insights to the PL enhancement mechanism with treatment of glucose.

  20. Radiation tolerance of boron doped dendritic web silicon solar cells

    NASA Technical Reports Server (NTRS)

    Rohatgi, A.

    1980-01-01

    The potential of dendritic web silicon for giving radiation hard solar cells is compared with the float zone silicon material. Solar cells with n(+)-p-P(+) structure and approximately 15% (AMl) efficiency were subjected to 1 MeV electron irradiation. Radiation tolerance of web cell efficiency was found to be at least as good as that of the float zone silicon cell. A study of the annealing behavior of radiation-induced defects via deep level transient spectroscopy revealed that E sub v + 0.31 eV defect, attributed to boron-oxygen-vacancy complex, is responsible for the reverse annealing of the irradiated cells in the temperature range of 150 to 350 C.

  1. Boron

    MedlinePlus

    ... form of boron, inside the vagina to treat yeast infections. People also apply boric acid to the ... acid, used inside the vagina, can successfully treat yeast infections (candidiasis), including infections that do not seem ...

  2. Boron-doped nanocrystalline diamond microelectrode arrays monitor cardiac action potentials.

    PubMed

    Maybeck, Vanessa; Edgington, Robert; Bongrain, Alexandre; Welch, Joseph O; Scorsone, Emanuel; Bergonzo, Philippe; Jackman, Richard B; Offenhäusser, Andreas

    2014-02-01

    The expansion of diamond-based electronics in the area of biological interfacing has not been as thoroughly explored as applications in electrochemical sensing. However, the biocompatibility of diamond, large safe electrochemical window, stability, and tunable electronic properties provide opportunities to develop new devices for interfacing with electrogenic cells. Here, the fabrication of microelectrode arrays (MEAs) with boron-doped nanocrystalline diamond (BNCD) electrodes and their interfacing with cardiomyocyte-like HL-1 cells to detect cardiac action potentials are presented. A nonreductive means of structuring doped and undoped diamond on the same substrate is shown. The resulting BNCD electrodes show high stability under mechanical stress generated by the cells. It is shown that by fabricating the entire surface of the MEA with NCD, in patterns of conductive doped, and isolating undoped regions, signal detection may be improved up to four-fold over BNCD electrodes passivated with traditional isolators.

  3. Boron laser doping using spin-on dopant for textured crystalline silicon solar cell

    NASA Astrophysics Data System (ADS)

    Nishimura, Hideki; Manabe, Mitsuaki; Sakagawa, Hideki; Fuyuki, Takashi

    2015-06-01

    A novel precursor layer, polyboron film (PBF), was applied in the laser doping (LD) process. Localized LD using PBF was applied to a high-efficiency solar cell structure as a selective emitter (SE). Interface adhesion was improved by using an organic-polymer-based doping precursor, PBF. A strongly adhered interface contributed to the preservation of textured formations after disruption by LD, and to the homogeneous introduction of impurities. Surface geometries were retained almost completely even after LD. Sheet resistances were decreased by additional boron doping by LD. The photovoltaic characteristics were improved by SE formation using PBF with an optimum average laser power. Consequently, the SE formed by LD showed an increase in fill factor (FF), which contributed to the improvement in solar cell efficiency.

  4. Study on depth profiles of hydrogen in boron-doped diamond films by elastic recoil detection analysis

    SciTech Connect

    Changgeng, Liao; Shengsheng, Yang; Ximeng, Chen; Yongqiang, Wang

    1999-06-10

    Depth profiles of hydrogen in a set of boron-doped diamond films were studied by a convolution method to simulate the recoil proton spectra induced by {sup 4}He ions of 3 MeV. Results show that the hydrogen depth profiles in these varying-level boron-doped diamond films exhibit a similar three-layer structure: the surface absorption layer, the diffusion region, and the uniform hydrogen-containing matrix. Hydrogen concentrations at all the layers, especially in the surface layer, are found to increase significantly with the boron-doping concentration, implying that more dangling-bonds and/or CH-bonds were introduced by the boron-doping process. While the increased dangling-bonds and/or CH-bonds degrade the microstructure of the diamond films as observed by Raman Shift, the boron-doping significantly reduces the specific resistance and makes semiconducting diamond films possible. Hydrogen mobility (or hydrogen loss) in these films as a result of the {sup 4}He beam irradiation was also observed and discussed.

  5. Photodegradation of aniline by goethite doped with boron under ultraviolet and visible light irradiation

    SciTech Connect

    Liu, Guanglong; Liao, Shuijiao; Zhu, Duanwei; Liu, Linghua; Cheng, Dongsheng; Zhou, Huaidong

    2011-08-15

    Highlights: {yields} Goethite modified by boron was prepared by sol-gel method in presence of boron acid at the low temperature. {yields} B-goethite has slight red shift in the band gap transition beside their stronger light absorption compared with pristine goethite. {yields} The results showed that semiconductor photocatalytic reaction mechanism should exist in the process of aniline degradation with goethite and B-goethite as photocatalyst. -- Abstract: In the present study, goethite and goethite doped with boron (B-goethite) were employed to detect the presence or absence of semiconductor photocatalytic reaction mechanism in the reaction systems. B-goethite was prepared by sol-gel method in presence of boron acid in order to improve its photocatalystic efficiency under the ultraviolet and visible light irradiation. The optical properties of goethite and B-goethite were characterized by ultraviolet and visible absorption spectra and the result indicated that B-goethite has slight red shift in the band gap transition beside their stronger light absorption compared with pristine goethite. Degradation of aniline was investigated in presence of goethite and B-goethite in aqueous solution. It was found that the B-goethite photocatalyst exhibited enhanced ultraviolet and visible light photocatalytic activity in degradation of aniline compared with the pristine goethite. The photocatalytic degradation mechanism of B-goethite was discussed.

  6. Carbon doping induced peculiar transport properties of boron nitride nanoribbons p-n junctions

    SciTech Connect

    Liu, N.; Gao, G. Y.; Zhu, S. C.; Ni, Y.; Wang, S. L.; Yao, K. L.; Liu, J. B.

    2014-07-14

    By applying nonequilibrium Green's function combined with density functional theory, we investigate the electronic transport properties of carbon-doped p-n nanojunction based on hexagonal boron nitride armchair nanoribbons. The calculated I-V curves show that both the center and edge doping systems present obvious negative differential resistance (NDR) behavior and excellent rectifying effect. At low positive bias, the edge doping systems possess better NDR performance with larger peak-to-valley ratio (∼10{sup 5}), while at negative bias, the obtained peak-to-valley ratio for both of the edge and center doping systems can reach the order of 10{sup 7}. Meanwhile, center doping systems present better rectifying performance than the edge doping ones, and giant rectification ratio up to 10{sup 6} can be obtained in a wide bias range. These outstanding transport properties are explained by the evolution of the transmission spectra and band structures with applied bias, together with molecular projected self-consistent Hamiltonian eigenvalues and eigenstates.

  7. Critical role of intercalated water for electrocatalytically active nitrogen-doped graphitic systems

    DOE PAGES

    Martinez, Ulises; Dumont, Joseph H.; Holby, Edward F.; ...

    2016-03-18

    Graphitic materials are very essential in energy conversion and storage because of their excellent chemical and electrical properties. The strategy for obtaining functional graphitic materials involves graphite oxidation and subsequent dissolution in aqueous media, forming graphene-oxide nanosheets (GNs). Restacked GNs contain substantial intercalated water that can react with heteroatom dopants or the graphene lattice during reduction. We demonstrate that removal of intercalated water using simple solvent treatments causes significant structural reorganization, substantially affecting the oxygen reduction reaction (ORR) activity and stability of nitrogen-doped graphitic systems. Amid contrasting reports describing the ORR activity of GN-based catalysts in alkaline electrolytes, we demonstratemore » superior activity in an acidic electrolyte with an onset potential of ~0.9 V, a half-wave potential (E½) of 0.71 V, and a selectivity for four-electron reduction of >95%. Finally and further, durability testing showed E½ retention >95% in N2- and O2-saturated solutions after 2000 cycles, demonstrating the highest ORR activity and stability reported to date for GN-based electrocatalysts in acidic media.« less

  8. Critical role of intercalated water for electrocatalytically active nitrogen-doped graphitic systems

    SciTech Connect

    Martinez, Ulises; Dumont, Joseph H.; Holby, Edward F.; Artyushkova, Kateryna; Purdy, Geraldine M.; Singh, Akhilesh; Mack, Nathan H.; Atanassov, Plamen; Cullen, David A.; More, Karren L.; Chhowalla, Manish; Zelenay, Piotr; Dattelbaum, Andrew M.; Mohite, Aditya D.; Gupta, Gautam

    2016-03-18

    Graphitic materials are very essential in energy conversion and storage because of their excellent chemical and electrical properties. The strategy for obtaining functional graphitic materials involves graphite oxidation and subsequent dissolution in aqueous media, forming graphene-oxide nanosheets (GNs). Restacked GNs contain substantial intercalated water that can react with heteroatom dopants or the graphene lattice during reduction. We demonstrate that removal of intercalated water using simple solvent treatments causes significant structural reorganization, substantially affecting the oxygen reduction reaction (ORR) activity and stability of nitrogen-doped graphitic systems. Amid contrasting reports describing the ORR activity of GN-based catalysts in alkaline electrolytes, we demonstrate superior activity in an acidic electrolyte with an onset potential of ~0.9 V, a half-wave potential (E½) of 0.71 V, and a selectivity for four-electron reduction of >95%. Finally and further, durability testing showed E½ retention >95% in N2- and O2-saturated solutions after 2000 cycles, demonstrating the highest ORR activity and stability reported to date for GN-based electrocatalysts in acidic media.

  9. Critical role of intercalated water for electrocatalytically active nitrogen-doped graphitic systems

    PubMed Central

    Martinez, Ulises; Dumont, Joseph H.; Holby, Edward F.; Artyushkova, Kateryna; Purdy, Geraldine M.; Singh, Akhilesh; Mack, Nathan H.; Atanassov, Plamen; Cullen, David A.; More, Karren L.; Chhowalla, Manish; Zelenay, Piotr; Dattelbaum, Andrew M.; Mohite, Aditya D.; Gupta, Gautam

    2016-01-01

    Graphitic materials are essential in energy conversion and storage because of their excellent chemical and electrical properties. The strategy for obtaining functional graphitic materials involves graphite oxidation and subsequent dissolution in aqueous media, forming graphene-oxide nanosheets (GNs). Restacked GNs contain substantial intercalated water that can react with heteroatom dopants or the graphene lattice during reduction. We demonstrate that removal of intercalated water using simple solvent treatments causes significant structural reorganization, substantially affecting the oxygen reduction reaction (ORR) activity and stability of nitrogen-doped graphitic systems. Amid contrasting reports describing the ORR activity of GN-based catalysts in alkaline electrolytes, we demonstrate superior activity in an acidic electrolyte with an onset potential of ~0.9 V, a half-wave potential (E½) of 0.71 V, and a selectivity for four-electron reduction of >95%. Further, durability testing showed E½ retention >95% in N2- and O2-saturated solutions after 2000 cycles, demonstrating the highest ORR activity and stability reported to date for GN-based electrocatalysts in acidic media. PMID:27034981

  10. Modeling and simulation of boron-doped nanocrystalline silicon carbide thin film by a field theory.

    PubMed

    Xiong, Liming; Chen, Youping; Lee, James D

    2009-02-01

    This paper presents the application of a multiscale field theory in modeling and simulation of boron-doped nanocrystalline silicon carbide (B-SiC). The multiscale field theory was briefly introduced. Based on the field theory, numerical simulations show that intergranular glassy amorphous films (IGFs) and nano-sized pores exist in triple junctions of the grains for nanocrystalline B-SiC. Residual tensile stress in the SiC grains and compressive stress on the grain boundaries (GBs) were observed. Under tensile loading, it has been found that mechanical response of 5 wt% boron-SiC exhibits five characteristic regimes. Deformation mechanism at atomic scale has been revealed. Tensile strength and Young's modulus of nanocrystalline SiC were accurately reproduced.

  11. Boron doped GaN and InN: Potential candidates for spintronics

    NASA Astrophysics Data System (ADS)

    Fan, S. W.; Huang, X. N.; Yao, K. L.

    2017-02-01

    The full potential linearized augmented plane wave method together with the Tran-Blaha modified Becke-Johnson potential is utilized to investigate the electronic structures and magnetism for boron doped GaN and InN. Calculations show the boron substituting nitrogen (BN defects) could induce the GaN and InN to be half-metallic ferromagnets. The magnetic moments mainly come from the BN defects, and each BN defect would produce the 2.00 μB total magnetic moment. The electronic structures indicate the carriers-mediated double exchange interaction plays a crucial role in forming the ferromagnetism. Positive chemical pair interactions imply the BN defects would form the homogeneous distribution in GaN and InN matrix. Moderate formation energies suggest that GaN and InN with BN defects could be fabricated experimentally.

  12. Boron, graphite, glass, metal and aramid fiber reinforced plastics. January, 1973-May, 1981 (Citations from the Rubber and Plastics Research Association Data Base). Report for January 1973-May 1981

    SciTech Connect

    Not Available

    1981-05-01

    The citations cover information about advanced reinforced composites such as boron, graphite, glass, metal, and aramid. Topics include applications, fabrication processes, proerties, nondestructive testing, and economics of composite materials. (Contains 90 citations fully indexed and including a title list.)

  13. Thermodynamic and kinetic studies of laser thermal processing of heavily boron-doped amorphous silicon using molecular dynamics

    NASA Astrophysics Data System (ADS)

    Wang, Liguo; Clancy, Paulette; Thompson, Michael O.; Murthy, Cheruvu S.

    2002-09-01

    Laser thermal processing (LTP) has been proposed as a means to avoid unwanted transient enhanced diffusion and deactivation of dopants, especially boron and arsenic, during the formation of ultrashallow junctions. Although experimental studies have been carried out to determine the efficacy of LTP for pure Si and lightly B-doped junctions, the effects of high concentrations of dopants (above 2% B) on the thermodynamic and kinetic properties of the regrown film are unknown. In this study, a classical interatomic potential model [Stillinger-Weber (SW)] is used with a nonequilibrium molecular dynamics computer simulation technique to study the laser thermal processing of heavily B-doped Si in the range 2-10 at. % B. We observe only a small effect of boron concentration on the congruent melting temperature of the B:Si alloy, and thus the narrowing of the "process window" for LTP is predicted to be small. No significant tendency for boron to segregate was observed at either the regrowth front or the buried c-Si interface during fast regrowth. The B-doped region regrew as defect-free crystal with full activation of the boron atoms at low boron concentrations (2%), in good agreement with experiments. As the concentration of boron increased, the number of intrinsic Si defects and boron interstitials in the regrown materials increased, with a minor amount of boron atoms in clusters (<2%). An instability limit for crystal regrowth was observed at around 8%-10% boron atoms during fast regrowth; systems with 10% B showed partial amorphization during regrowth. Comparison with tight-binding quantum mechanical calculations showed that the SW model gives similar diffusivities in the liquid and tendency to cluster, but the lifetimes of the SW clusters are considerably too long (>150 ps, compared to 5 ps in tight binding). The importance of adequate system size is discussed.

  14. Oxygen- and Lithium-Doped Hybrid Boron-Nitride/Carbon Networks for Hydrogen Storage.

    PubMed

    Shayeganfar, Farzaneh; Shahsavari, Rouzbeh

    2016-12-20

    Hydrogen storage capacities have been studied on newly designed three-dimensional pillared boron nitride (PBN) and pillared graphene boron nitride (PGBN). We propose these novel materials based on the covalent connection of BNNTs and graphene sheets, which enhance the surface and free volume for storage within the nanomaterial and increase the gravimetric and volumetric hydrogen uptake capacities. Density functional theory and molecular dynamics simulations show that these lithium- and oxygen-doped pillared structures have improved gravimetric and volumetric hydrogen capacities at room temperature, with values on the order of 9.1-11.6 wt % and 40-60 g/L. Our findings demonstrate that the gravimetric uptake of oxygen- and lithium-doped PBN and PGBN has significantly enhanced the hydrogen sorption and desorption. Calculations for O-doped PGBN yield gravimetric hydrogen uptake capacities greater than 11.6 wt % at room temperature. This increased value is attributed to the pillared morphology, which improves the mechanical properties and increases porosity, as well as the high binding energy between oxygen and GBN. Our results suggest that hybrid carbon/BNNT nanostructures are an excellent candidate for hydrogen storage, owing to the combination of the electron mobility of graphene and the polarized nature of BN at heterojunctions, which enhances the uptake capacity, providing ample opportunities to further tune this hybrid material for efficient hydrogen storage.

  15. Preparation and characterization of boron-doped titania nano-materials with antibacterial activity

    NASA Astrophysics Data System (ADS)

    Xue, Xiangxin; Wang, Yuzheng; Yang, He

    2013-01-01

    Boron-doped TiO2 (B/TiO2) nano-materials were synthesized by a sol-gel method and characterized by X-ray diffraction pattern (XRD), transmission electron microscopy (TEM), X-ray photoelectron spectroscopy (XPS), Fourier transform infrared spectrum (FT-IR) and UV-vis diffuse reflectance spectra (DRS). With the test of bacterial inhibition zone, the antibacterial properties of B/TiO2 nano-materials on Escherichia coli were investigated. The results show that the structure of TiO2 could be transformed from amorphous to anatase and then to rutile by increasing calcination temperature; part of the boron atoms probably have been weaved into the interstitial TiO2 structure or incorporated into the TiO2 lattice through occupying O sites, whereas others exist as B2O3. The results of antibacterial experiment under visible light irradiation show that the B/TiO2 nano-materials exhibit enhanced antibacterial efficiency compared with non-doped TiO2. Ultimately, the action mechanism of B/TiO2 doping is discussed.

  16. Bare and boron-doped cubic silicon carbide nanowires for electrochemical detection of nitrite sensitively

    PubMed Central

    Yang, Tao; Zhang, Liqin; Hou, Xinmei; Chen, Junhong; Chou, Kuo-Chih

    2016-01-01

    Fabrication of eletrochemical sensors based on wide bandgap compound semiconductors has attracted increasing interest in recent years. Here we report for the first time electrochemical nitrite sensors based on cubic silicon carbide (SiC) nanowires (NWs) with smooth surface and boron-doped cubic SiC NWs with fin-like structure. Multiple techniques including scanning electron microscopy (SEM), transmission electron microscopy (TEM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and electron energy loss spectroscopy (EELS) were used to characterize SiC and boron-doped SiC NWs. As for the electrochemical behavior of both SiC NWs electrode, the cyclic voltammetric results show that both SiC electrodes exhibit wide potential window and excellent electrocatalytic activity toward nitrite oxidation. Differential pulse voltammetry (DPV) determination reveals that there exists a good linear relationship between the oxidation peak current and the concentration in the range of 50–15000 μmoL L−1 (cubic SiC NWs) and 5–8000 μmoL L−1 (B-doped cubic SiC NWs) with the detection limitation of 5 and 0.5 μmoL L−1 respectively. Compared with previously reported results, both as-prepared nitrite sensors exhibit wider linear response range with comparable high sensitivity, high stability and reproducibility. PMID:27109361

  17. Bare and boron-doped cubic silicon carbide nanowires for electrochemical detection of nitrite sensitively.

    PubMed

    Yang, Tao; Zhang, Liqin; Hou, Xinmei; Chen, Junhong; Chou, Kuo-Chih

    2016-04-25

    Fabrication of eletrochemical sensors based on wide bandgap compound semiconductors has attracted increasing interest in recent years. Here we report for the first time electrochemical nitrite sensors based on cubic silicon carbide (SiC) nanowires (NWs) with smooth surface and boron-doped cubic SiC NWs with fin-like structure. Multiple techniques including scanning electron microscopy (SEM), transmission electron microscopy (TEM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and electron energy loss spectroscopy (EELS) were used to characterize SiC and boron-doped SiC NWs. As for the electrochemical behavior of both SiC NWs electrode, the cyclic voltammetric results show that both SiC electrodes exhibit wide potential window and excellent electrocatalytic activity toward nitrite oxidation. Differential pulse voltammetry (DPV) determination reveals that there exists a good linear relationship between the oxidation peak current and the concentration in the range of 50-15000 μmoL L(-1) (cubic SiC NWs) and 5-8000 μmoL L(-1) (B-doped cubic SiC NWs) with the detection limitation of 5 and 0.5 μmoL L(-1) respectively. Compared with previously reported results, both as-prepared nitrite sensors exhibit wider linear response range with comparable high sensitivity, high stability and reproducibility.

  18. Bare and boron-doped cubic silicon carbide nanowires for electrochemical detection of nitrite sensitively

    NASA Astrophysics Data System (ADS)

    Yang, Tao; Zhang, Liqin; Hou, Xinmei; Chen, Junhong; Chou, Kuo-Chih

    2016-04-01

    Fabrication of eletrochemical sensors based on wide bandgap compound semiconductors has attracted increasing interest in recent years. Here we report for the first time electrochemical nitrite sensors based on cubic silicon carbide (SiC) nanowires (NWs) with smooth surface and boron-doped cubic SiC NWs with fin-like structure. Multiple techniques including scanning electron microscopy (SEM), transmission electron microscopy (TEM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and electron energy loss spectroscopy (EELS) were used to characterize SiC and boron-doped SiC NWs. As for the electrochemical behavior of both SiC NWs electrode, the cyclic voltammetric results show that both SiC electrodes exhibit wide potential window and excellent electrocatalytic activity toward nitrite oxidation. Differential pulse voltammetry (DPV) determination reveals that there exists a good linear relationship between the oxidation peak current and the concentration in the range of 50-15000 μmoL L-1 (cubic SiC NWs) and 5-8000 μmoL L-1 (B-doped cubic SiC NWs) with the detection limitation of 5 and 0.5 μmoL L-1 respectively. Compared with previously reported results, both as-prepared nitrite sensors exhibit wider linear response range with comparable high sensitivity, high stability and reproducibility.

  19. Integrated oxygen-doping and dye sensitization of graphitic carbon nitride for enhanced visible light photodegradation.

    PubMed

    Liu, Shizhen; Sun, Hongqi; Ang, H M; Tade, Moses O; Wang, Shaobin

    2016-08-15

    Graphitic carbon nitride (GCN) is a promising metal-free photocatalyst while suffering from low charge mobility induced inefficient photocatalysis. In this work, oxygen doping was employed to enhance the photodegradation of organic pollutants in water on graphitic carbon nitride (GCNO) under visible light. For further absorption extension, four organic dyes (Eosin-Y, Perylene, Nile-red and Coumarin) were adopted to dye-sensitize the GCNO photocatalyst. It was found that O-doping can promote dye sensitization, which was dependent on the type of dyes and influenced the photodegradation efficiencies of methylene blue (MB) and phenol. Nile-red sensitized GCNO presented the best activity in MB degradation under λ>480nm irradiations while Eosin-Y showed the best sensitization performance for phenol degradation under λ>420nm light source. However, dye sensitization was not effective for enhanced pollutant degradation on GCN without O-doping. UV-vis diffuse reflectance spectra (UV-vis DRS), photoluminescence (PL) spectra, and photocurrent analyses were applied to investigate the mechanism of carriers' transfer, which indicated that dye molecules could inject extra electrons into GCNO energy band and the energy dislocation could suppress electron/hole recombination, enhancing photocatalytic performances.

  20. Cobalt monoxide-doped porous graphitic carbon microspheres for supercapacitor application

    PubMed Central

    Yang, Zheng-Chun; Tang, Chun-Hua; Zhang, Yu; Gong, Hao; Li, Xu; Wang, John

    2013-01-01

    A novel design and facile synthesis process for carbon based hybrid materials, i.e., cobalt monoxide (CoO)-doped graphitic porous carbon microspheres (Co-GPCMs), have been developed. With the synthesis strategy, the mixture of cobalt gluconate, α-cyclodextrin and poly (ethylene oxide)106-poly (propylene oxide)70-poly (ethylene oxide)106 is treated hydrothermally, followed by pyrolysis in argon. The resultant Co-GPCMs exhibits a porous carbon matrix with localized graphitic structure while CoO nanodots are embedded in the carbon frame. Thus, the Co-GPCMs effectively combine the electric double-layer capacitance and pseudo-capacitance when used as the electrode in supercapacitor, which lead to a higher operation voltage (1.6 V) and give rise to a significantly higher energy density. This study provides a new research strategy for electrode materials in high energy density supercapacitors. PMID:24113335

  1. Plasma Synthesized Doped Boron Nanopowder for MgB2 Superconductors

    SciTech Connect

    James V. Marzik

    2012-03-26

    Under this program, a process to synthesize nano-sized doped boron powder by a plasma synthesis process was developed and scaled up from 20 gram batches at program start to over 200 grams by program end. Over 75 batches of boron nanopowder were made by RF plasma synthesis. Particle sizes were typically in the 20-200 nm range. The powder was synthesized by the reductive pyrolysis of BCl{sub 3} in hydrogen in an RF plasma. A wide range of process parameters were investigated including plasma power, torch geometry, gas flow rates, and process pressure. The powder-in-tube technique was used to make monofilament and multifilament superconducting wires. MgB{sub 2} wire made with Specialty Materials plasma synthesized boron nanopowder exhibited superconducting properties that significantly exceeded the program goals. Superconducting critical currents, J{sub c}, in excess of 10{sup 5} A cm{sup -2} at magnetic fields of 8 tesla were reproducibly achieved. The upper critical magnetic field in wires fabricated with program boron powder were H{sub c2}(0) = 37 tesla, demonstrating the potential of these materials for high field magnet applications. T{sub c} in carbon-doped MgB{sub 2} powder showed a systematic decrease with increasing carbon precursor gas flows, indicating the plasma synthesis process can give precise control over dopant concentrations. Synthesis rates increased by a factor of 400% over the course of the program, demonstrating the scalability of the powder synthesis process. The plasma synthesis equipment at Specialty Materials has successfully and reproducibly made high quality boron nanopowder for MgB{sub 2} superconductors. Research and development from this program enabled Specialty Materials to successfully scale up the powder synthesis process by a factor of ten and to double the size of its powder pilot plant. Thus far the program has been a technical success. It is anticipated that continued systematic development of plasma processing parameters, dopant

  2. Enhanced visible light photocatalytic degradation of Rhodamine B over phosphorus doped graphitic carbon nitride

    NASA Astrophysics Data System (ADS)

    Chai, Bo; Yan, Juntao; Wang, Chunlei; Ren, Zhandong; Zhu, Yuchan

    2017-01-01

    Phosphorus doped graphitic carbon nitride (g-C3N4) was easily synthesized using ammonium hexafluorophosphate (NH4PF6) as phosphorus source, and ammonium thiocyanate (NH4SCN) as g-C3N4 precursor, through a direct thermal co-polycondensation procedure. The obtained phosphorus doped g-C3N4 was characterized by X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), high-resolution transmission electron microscopy (HRTEM), X-ray photoelectron spectroscopy (XPS), Fourier transform infrared spectra (FTIR), UV-vis diffuse reflectance absorption spectra (UV-DRS), photoelectrochemical measurement and photoluminescence spectra (PL). The photocatalytic activities of phosphorus doped g-C3N4 samples were evaluated by degradation of Rhodamine B (RhB) solution under visible light irradiation. The results showed that the phosphorus doped g-C3N4 had a superior photocatalytic activity than that of pristine g-C3N4, attributing to the phosphorus atoms substituting carbon atoms of g-C3N4 frameworks to result in light harvesting enhancement and delocalized π-conjugated system of this copolymer, beneficial for the increase of photocatalytic performance. The photoelectrochemical measurements also verified that the charge carrier separation efficiency was promoted by phosphorus doping g-C3N4. Moreover, the tests of radical scavengers demonstrated that the holes (h+) and superoxide radicals (rad O2-) were the main active species for the degradation of RhB.

  3. Deposition of boron doped DLC films on TiNb and characterization of their mechanical properties and blood compatibility

    PubMed Central

    Liza, Shahira; Hieda, Junko; Akasaka, Hiroki; Ohtake, Naoto; Tsutsumi, Yusuke; Nagai, Akiko; Hanawa, Takao

    2017-01-01

    Abstract Diamond-like carbon (DLC) material is used in blood contacting devices as the surface coating material because of the antithrombogenicity behavior which helps to inhibit platelet adhesion and activation. In this study, DLC films were doped with boron during pulsed plasma chemical vapor deposition (CVD) to improve the blood compatibility. The ratio of boron to carbon (B/C) was varied from 0 to 0.4 in the film by adjusting the flow rate of trimethylboron and acetylene. Tribological tests indicated that boron doping with a low B/C ratio of 0.03 is beneficial for reducing friction (μ = 0.1), lowering hardness and slightly increasing wear rate compared to undoped DLC films. The B/C ratio in the film of 0.03 and 0.4 exhibited highly hydrophilic surface owing to their high wettability and high surface energy. An in vitro platelet adhesion experiment was conducted to compare the blood compatibility of TiNb substrates before and after coating with undoped and boron doped DLC. Films with highly hydrophilic surface enhanced the blood compatibility of TiNb, and the best results were obtained for DLC with the B/C ratio of 0.03. Boron doped DLC films are promising surface coatings for blood contacting devices. PMID:28179961

  4. Deposition of boron doped DLC films on TiNb and characterization of their mechanical properties and blood compatibility.

    PubMed

    Liza, Shahira; Hieda, Junko; Akasaka, Hiroki; Ohtake, Naoto; Tsutsumi, Yusuke; Nagai, Akiko; Hanawa, Takao

    2017-01-01

    Diamond-like carbon (DLC) material is used in blood contacting devices as the surface coating material because of the antithrombogenicity behavior which helps to inhibit platelet adhesion and activation. In this study, DLC films were doped with boron during pulsed plasma chemical vapor deposition (CVD) to improve the blood compatibility. The ratio of boron to carbon (B/C) was varied from 0 to 0.4 in the film by adjusting the flow rate of trimethylboron and acetylene. Tribological tests indicated that boron doping with a low B/C ratio of 0.03 is beneficial for reducing friction (μ = 0.1), lowering hardness and slightly increasing wear rate compared to undoped DLC films. The B/C ratio in the film of 0.03 and 0.4 exhibited highly hydrophilic surface owing to their high wettability and high surface energy. An in vitro platelet adhesion experiment was conducted to compare the blood compatibility of TiNb substrates before and after coating with undoped and boron doped DLC. Films with highly hydrophilic surface enhanced the blood compatibility of TiNb, and the best results were obtained for DLC with the B/C ratio of 0.03. Boron doped DLC films are promising surface coatings for blood contacting devices.

  5. Pancake π–π Bonding Goes Double: Unexpected 4e/All-Sites Bonding in Boron- and Nitrogen-Doped Phenalenyls

    SciTech Connect

    Tian, Yong-Hui; Sumpter, Bobby G.; Du, Shiyu; Huang, Jingsong

    2015-06-03

    Phenalenyl is an important neutral pi-radical due to its capability to form unconventional pancake pi-pi bonding interactions, whereas its analogues with graphitic boron (B) or nitrogen (N)-doping have been regarded as closed-shell systems and therefore received much less attention. By using high-level quantum chemistry calculations, we also show that the B- and N-doped closed-shell phenalenyls unexpectedly form open-shell singlet pi-dimers with diradicaloid character featuring 2e/all-sites double pi-pi bonding. Moreover, by proper substitutions, the doped phenalenyl derivatives can be made open-shell species that form closed shell singlet pi-dimers bound by stronger 4e/all-sites double pi-pi bonding. Moreover, covalent pi-pi bonding overlap is distributed on all of the atomic sites giving robust and genuine pancake-shaped pi-dimers which, depending on the number of electrons available in the bonding interactions, are equally or more stable than the pi-dimers of the pristine phenalenyl.

  6. Pancake π–π Bonding Goes Double: Unexpected 4e/All-Sites Bonding in Boron- and Nitrogen-Doped Phenalenyls

    DOE PAGES

    Tian, Yong-Hui; Sumpter, Bobby G.; Du, Shiyu; ...

    2015-06-03

    Phenalenyl is an important neutral pi-radical due to its capability to form unconventional pancake pi-pi bonding interactions, whereas its analogues with graphitic boron (B) or nitrogen (N)-doping have been regarded as closed-shell systems and therefore received much less attention. By using high-level quantum chemistry calculations, we also show that the B- and N-doped closed-shell phenalenyls unexpectedly form open-shell singlet pi-dimers with diradicaloid character featuring 2e/all-sites double pi-pi bonding. Moreover, by proper substitutions, the doped phenalenyl derivatives can be made open-shell species that form closed shell singlet pi-dimers bound by stronger 4e/all-sites double pi-pi bonding. Moreover, covalent pi-pi bonding overlap ismore » distributed on all of the atomic sites giving robust and genuine pancake-shaped pi-dimers which, depending on the number of electrons available in the bonding interactions, are equally or more stable than the pi-dimers of the pristine phenalenyl.« less

  7. Nanoscale Control of Rewriteable Doping Patterns in Pristine Graphene/Boron Nitride Heterostructures.

    PubMed

    Velasco, Jairo; Ju, Long; Wong, Dillon; Kahn, Salman; Lee, Juwon; Tsai, Hsin-Zon; Germany, Chad; Wickenburg, Sebastian; Lu, Jiong; Taniguchi, Takashi; Watanabe, Kenji; Zettl, Alex; Wang, Feng; Crommie, Michael F

    2016-03-09

    Nanoscale control of charge doping in two-dimensional (2D) materials permits the realization of electronic analogs of optical phenomena, relativistic physics at low energies, and technologically promising nanoelectronics. Electrostatic gating and chemical doping are the two most common methods to achieve local control of such doping. However, these approaches suffer from complicated fabrication processes that introduce contamination, change material properties irreversibly, and lack flexible pattern control. Here we demonstrate a clean, simple, and reversible technique that permits writing, reading, and erasing of doping patterns for 2D materials at the nanometer scale. We accomplish this by employing a graphene/boron nitride heterostructure that is equipped with a bottom gate electrode. By using electron transport and scanning tunneling microscopy (STM), we demonstrate that spatial control of charge doping can be realized with the application of either light or STM tip voltage excitations in conjunction with a gate electric field. Our straightforward and novel technique provides a new path toward on-demand graphene p-n junctions and ultrathin memory devices.

  8. Boron and Nitrogen Doped Single walled Carbon Nanotubes as Possible Dilute Magnetic Semiconductors

    PubMed Central

    2007-01-01

    The structure of single walled armchair and zig-zag carbon nanotubes having 70 atoms and two carbons replaced by boron or nitrogen is obtained at minium energy using HF/6-31G* molecular orbital theory. The calculations show that the ground state of the zig-zag tubes is a triplet state while for the armchair tubes it is a singlet. In the zig-zag tubes the density of states at the Fermi level is greater for the spin down states compared to the spin up state indicating that the doped tubes could be ferromagnetic.

  9. Photovoltaic Device Including A Boron Doping Profile In An I-Type Layer

    DOEpatents

    Yang, Liyou

    1993-10-26

    A photovoltaic cell for use in a single junction or multijunction photovoltaic device, which includes a p-type layer of a semiconductor compound including silicon, an i-type layer of an amorphous semiconductor compound including silicon, and an n-type layer of a semiconductor compound including silicon formed on the i-type layer. The i-type layer including an undoped first sublayer formed on the p-type layer, and a boron-doped second sublayer formed on the first sublayer.

  10. Effect of Boron-Doping on the Graphene Aerogel Used as Cathode for the Lithium-Sulfur Battery.

    PubMed

    Xie, Yang; Meng, Zhen; Cai, Tingwei; Han, Wei-Qiang

    2015-11-18

    A porous interconnected 3D boron-doped graphene aerogel (BGA) was prepared via a one-pot hydrothermal treatment. The BGA material was first loaded with sulfur to serve as cathode in lithium-sulfur batteries. Boron was positively polarized on the graphene framework, allowing for chemical adsorption of negative polysufide species. Compared with nitrogen-doped and undoped graphene aerogel, the BGA-S cathode could deliver a higher capacity of 994 mA h g(-1) at 0.2 C after 100 cycles, as well as an outstanding rate capability, which indicated the BGA was an ideal cathode material for lithium-sulfur batteries.

  11. Novel band gap-tunable K-Na co-doped graphitic carbon nitride prepared by molten salt method

    NASA Astrophysics Data System (ADS)

    Zhao, Jiannan; Ma, Lin; Wang, Haoying; Zhao, Yanfeng; Zhang, Jian; Hu, Shaozheng

    2015-03-01

    Novel band gap-tunable K-Na co-doped graphitic carbon nitride was prepared by molten salt method using melamine, KCl, and NaCl as precursor. X-ray diffraction (XRD), N2 adsorption, Scanning electron microscope (SEM), UV-vis spectroscopy, Photoluminescence (PL), and X-ray photoelectron spectroscopy (XPS) were used to characterize the prepared catalysts. The CB and VB potentials of graphitic carbon nitride could be tuned from -1.09 and +1.55 eV to -0.29 and +2.25 eV by controlling the weight ratio of eutectic salts to melamine. Besides, ions doping inhibited the crystal growth of graphitic carbon nitride, enhanced the surface area, and increased the separation rate of photogenerated electrons and holes. The visible-light-driven Rhodamine B (RhB) photodegradation and mineralization performances were significantly improved after K-Na co-doping.

  12. Semi-metallic to semiconducting transition in graphene nanosheet with site specific co-doping of boron and nitrogen

    NASA Astrophysics Data System (ADS)

    Nath, Palash; Sanyal, Dirtha; Jana, Debnarayan

    2014-02-01

    Present work reports the modifications of band structure and density of states of graphene nanosheet by substitutional co-doping of boron (B) and nitrogen (N) in the pristine graphene system. Using ab-initio density functional theory (DFT) we show that the doping position plays an important key role to determine the band-gap in the graphene system. Co-doping of B and N at different sub-lattice positions in the planar graphene structure results different modifications in the band structure and density of states (DOS). Particular choice of sub-lattice doping position of B and N yields a finite value of band gap.

  13. Boron-Doped Anatase TiO2 as a High-Performance Anode Material for Sodium-Ion Batteries.

    PubMed

    Wang, Baofeng; Zhao, Fei; Du, Guodong; Porter, Spencer; Liu, Yong; Zhang, Peng; Cheng, Zhenxiang; Liu, Hua Kun; Huang, Zhenguo

    2016-06-29

    Pristine and boron-doped anatase TiO2 were prepared via a facile sol-gel method and the hydrothermal method for application as anode materials in sodium-ion batteries (SIBs). The sol-gel method leads to agglomerated TiO2, whereas the hydrothermal method is conducive to the formation of highly crystalline and discrete nanoparticles. The structure, morphology, and electrochemical properties were studied. The crystal size of TiO2 with boron doping is smaller than that of the nondoped crystals, which indicates that the addition of boron can inhibit the crystal growth. The electrochemical measurements demonstrated that the reversible capacity of the B-doped TiO2 is higher than that for the pristine sample. B-doping also effectively enhances the rate performance. The capacity of the B-doped TiO2 could reach 150 mAh/g at the high current rate of 2C and the capacity decay is only about 8 mAh/g over 400 cycles. The remarkable performance could be attributed to the lattice expansion resulting from B doping and the shortened Li(+) diffusion distance due to the nanosize. These results indicate that B-doped TiO2 can be a good candidate for SIBs.

  14. TiO2 nanopowder co-doped with iodine and boron to enhance visible-light photocatalytic activity.

    PubMed

    Ding, Jianqiang; Yuan, Yali; Xu, Jinsheng; Deng, Jian; Guo, Jianbo

    2009-10-01

    An iodine and boron co-doped TiO2 photocatalyst was prepared by the hydrolyzation-precipitation method. X-ray diffraction (XRD), ultraviolet-visible diffuse reflectance spectroscopy (UV-Vis DRS), and X-ray photoelectron spectroscopy (XPS) were applied to characterize the crystalline structure, light absorbing ability, and the chemical state of iodine and boron in the photocatalysts. The results of photocatalytic degradation of methyl orange demonstrated that the I-B-TiO2 catalyst prepared at 400 degrees C for 3 h exhibited the highest photocatalytic activity with a methyl orange degradation ratio of 61% under visible-light (lambda > or = 420 nm) irradiation for 120 min. The characterization results revealed that I-B-TiO2 is in conformity with the anatase TiO2 and that the doping of iodine and boron ions could efficiently inhibit the grain growth. Doped iodine was present in the multivalent forms of 17+, I- and I5+. Doped boron was present as B3+ in an as-prepared sample, forming a possible chemical environment such as B-O-Ti. Overall, the doping of I and B enhanced the ability of TiO2 to absorb visible-light, and it was observed that the photocatalytic activity of I-B-TiO2 was enhanced by the synergistic effect of I and B.

  15. Electronic properties of single-crystal diamonds heavily doped with boron

    SciTech Connect

    Buga, S. G.; Blank, V. D.; Terent'ev, S. A.; Kuznetsov, M. S.; Nosukhin, S. A.; Kulbachinskii, V. A. Krechetov, A. V.; Kytin, V. G.; Kytin, G. A.

    2007-04-15

    Single-crystal diamonds with characteristic sizes of 2-7 mm doped with boron in the concentration range 10{sup 19}-10{sup 20} cm{sup -3} have been grown by the temperature gradient method at high static pressures. The temperature dependence of the resistance R of the synthesized single crystals has been measured in the range 0.5 K < T < 297 K. An activated dependence R(T) with an activation energy of about 50 meV is observed in the range from room temperature to T {approx} 200 K. At temperatures below approximately 50 K, the temperature dependence of the conductivity for heavily doped crystals is proportional to T{sup 1/2}, which is characteristic of degenerate semiconductors with a high number of defects.

  16. Structural and electronic properties of cubic boron nitride doped with zinc

    SciTech Connect

    Li, Yubo; Cheng, Tianyuan; Wang, Xiao; Jiang, Huaxing; Yang, Hangsheng; Nose, Kenji

    2014-07-28

    Structural and electronic properties of Zn-doped cubic boron nitride (cBN) were investigated via first principle calculation based on density functional theory. Our simulation suggests that Zn can substitute for both B (Zn{sub B}) and N (Zn{sub N}) atom; Zn{sub B} is energetically favorable, and Zn{sub N} can only be prepared under B-rich conditions. Zn{sub B} induced a shallow acceptor level; however, the large difference in electronegativity between Zn and N makes the acceptor level strongly localized, which reduces effective carrier density. In the case of Zn{sub N}, both deep acceptor levels within band gap and shallow acceptor levels at the top of valence band were induced, which produced more free carriers than Zn{sub B}. The calculated results account for experimental results of enhanced electric conductivity of Zn-doped cBN films prepared under B-rich conditions.

  17. Macroscopically Aligned Graphite Films Prepared from Iodine-Doped Stretchable Polyacetylene Films Using Morphology-Retaining Carbonization.

    PubMed

    Matsushita, Satoshi; Akagi, Kazuo

    2015-07-22

    We prepared graphite films using typical Shirakawa-type and stretchable polyacetylene (PA) films as precursors through a morphology-retaining carbonization. A macroscopically aligned PA film was prepared from the drawable PA film using a mechanical-stretching procedure. The degree of orientation of the aligned PA film was evaluated by measuring polarized infrared absorption spectra and an azimuthal-angle profile of a Laue X-ray diffraction (XRD) pattern. The carbonization was performed from the iodine-doped PA films as precursors at 800 °C. The carbon films were subsequently graphitized at 1400-3000 °C, yielding graphite films with almost the same surface morphology as that of the original PA films and that of the carbon films as precursors. The typical PA film graphitized at 2600 °C exhibited tensile strengths of up to 224 MPa, moduli of up to 10 GPa, and an average electrical conductivity of 2.5 × 10(2) S/cm. In contrast, the graphite film prepared from the stretched PA film presented a Laue XRD pattern in which graphitic crystal structures are aligned parallel to the direction of stretching of the PA film. The anisotropic graphite film showed an enhanced conductivity of up to 1.5 × 10(3) S/cm along the stretching direction. We demonstrated that an iodine-doped PA film is a highly efficient carbon source for producing graphite films with good mechanical and electrical properties. The total yield of a graphite film is as high as 61-74% at up to 3000 °C, which is considerably higher than that of polyacrylonitrile-based carbon fiber and polyimide-based graphite film.

  18. Iron-boron pairing kinetics in illuminated p-type and in boron/phosphorus co-doped n-type silicon

    SciTech Connect

    Möller, Christian; Bartel, Til; Gibaja, Fabien; Lauer, Kevin

    2014-07-14

    Iron-boron (FeB) pairing is observed in the n-type region of a boron and phosphorus co-doped silicon sample which is unexpected from the FeB pair model of Kimerling and Benton. To explain the experimental data, the existing FeB pair model is extended by taking into account the electronic capture and emission rates at the interstitial iron (Fe{sub i}) trap level as a function of the charge carrier densities. According to this model, the charge state of the Fe{sub i} may be charged in n-type making FeB association possible. Further, FeB pair formation during illumination in p-type silicon is investigated. This permits the determination of the charge carrier density dependent FeB dissociation rate and in consequence allows to determine the acceptor concentration in the co-doped n-type silicon by lifetime measurement.

  19. Iron-boron pairing kinetics in illuminated p-type and in boron/phosphorus co-doped n-type silicon

    NASA Astrophysics Data System (ADS)

    Möller, Christian; Bartel, Til; Gibaja, Fabien; Lauer, Kevin

    2014-07-01

    Iron-boron (FeB) pairing is observed in the n-type region of a boron and phosphorus co-doped silicon sample which is unexpected from the FeB pair model of Kimerling and Benton. To explain the experimental data, the existing FeB pair model is extended by taking into account the electronic capture and emission rates at the interstitial iron (Fei) trap level as a function of the charge carrier densities. According to this model, the charge state of the Fei may be charged in n-type making FeB association possible. Further, FeB pair formation during illumination in p-type silicon is investigated. This permits the determination of the charge carrier density dependent FeB dissociation rate and in consequence allows to determine the acceptor concentration in the co-doped n-type silicon by lifetime measurement.

  20. Fabrication and Characterization of N-Type Zinc Oxide/P-Type Boron Doped Diamond Heterojunction

    NASA Astrophysics Data System (ADS)

    Marton, Marián; Mikolášek, Miroslav; Bruncko, Jaroslav; Novotný, Ivan; Ižák, Tibor; Vojs, Marian; Kozak, Halyna; Varga, Marián; Artemenko, Anna; Kromka, Alexander

    2015-09-01

    Diamond and ZnO are very promising wide-bandgap materials for electronic, photovoltaic and sensor applications because of their excellent electrical, optical, physical and electrochemical properties and biocompatibility. In this contribution we show that the combination of these two materials opens up the potential for fabrication of bipolar heterojunctions. Semiconducting boron doped diamond (BDD) thin films were grown on Si and UV grade silica glass substrates by HFCVD method with various boron concentration in the gas mixture. Doped zinc oxide (ZnO:Al, ZnO:Ge) thin layers were deposited by diode sputtering and pulsed lased deposition as the second semiconducting layer on the diamond films. The amount of dopants within the films was varied to obtain optimal semiconducting properties to form a bipolar p-n junction. Finally, different ZnO/BDD heterostructures were prepared and analyzed. Raman spectroscopy, SEM, Hall constant and I-V measurements were used to investigate the quality, structural and electrical properties of deposited heterostructures, respectively. I-V measurements of ZnO/BDD diodes show a rectifying ratio of 55 at ±4 V. We found that only very low dopant concentrations for both semiconducting materials enabled us to fabricate a functional p-n junction. Obtained results are promising for fabrication of optically transparent ZnO/BDD bipolar heterojunction.

  1. Boron δ-doped (111) diamond solution gate field effect transistors.

    PubMed

    Edgington, Robert; Ruslinda, A Rahim; Sato, Syunsuke; Ishiyama, Yuichiro; Tsuge, Kyosuke; Ono, Tasuku; Kawarada, Hiroshi; Jackman, Richard B

    2012-03-15

    A solution gate field effect transistor (SGFET) using an oxidised boron δ-doped channel on (111) diamond is presented for the first time. Employing an optimised plasma chemical vapour deposition (PECVD) recipe to deposit δ-layers, SGFETs show improved current-voltage (I-V) characteristics in comparison to previous similar devices fabricated on (100) and polycrystalline diamond, where the device is shown to operate in the enhancement mode of operation, achieving channel pinch-off and drain-source current saturation within the electrochemical window of diamond. A maximum gain and transconductance of 3 and 200μS/mm are extracted, showing comparable figures of merit to hydrogen-based SGFET. The oxidised device shows a site-binding model pH sensitivity of 36 mV/pH, displaying fast temporal responses. Considering the biocompatibility of diamond towards cells, the device's highly mutable transistor characteristics, pH sensitivity and stability against anodic oxidation common to hydrogen terminated diamond SGFET, oxidised boron δ-doped diamond SGFETs show promise for the recording of action potentials from electrogenic cells.

  2. Role of aluminum in silver paste contact to boron-doped silicon emitters

    NASA Astrophysics Data System (ADS)

    Wu, Wei; Roelofs, Katherine E.; Subramoney, Shekhar; Lloyd, Kathryn; Zhang, Lei

    2017-01-01

    The addition of aluminum to silver metallization pastes has been found to lower the contact resistivity of a silver metallization on boron-doped silicon emitters for n-type Si solar cells. However, the addition of Al also induces more surface recombination and increases the Ag pattern's line resistivity, both of which ultimately limit the cell efficiency. There is a need to develop a fundamental understanding of the role that Al plays in reducing the contact resistivity and to explore alternative additives. A fritless silver paste is used to allow direct analysis of the impact of Al on the Ag-Si interfacial microstructure and isolate the influence of Al on the electrical contact from the complicated Ag-Si interfacial glass layer. Electrical analysis shows that in a simplified system, Al decreases the contact resistivity by about three orders of magnitude. Detailed microstructural studies show that in the presence of Al, microscale metallic spikes of Al-Ag alloy and nanoscale metallic spikes of Ag-Si alloy penetrate the surface of the boron-doped Si emitters. These results demonstrate the role of Al in reducing the contact resistivity through the formation of micro- and nano-scale metallic spikes, allowing the direct contact to the emitters.

  3. Development of neuraminidase detection using gold nanoparticles boron-doped diamond electrodes.

    PubMed

    Wahyuni, Wulan T; Ivandini, Tribidasari A; Saepudin, Endang; Einaga, Yasuaki

    2016-03-15

    Gold nanoparticles-modified boron-doped diamond (AuNPs-BDD) electrodes, which were prepared with a self-assembly deposition of AuNPs at amine-terminated boron-doped diamond, were examined for voltammetric detection of neuraminidase (NA). The detection method was performed based on the difference of electrochemical responses of zanamivir at gold surface before and after the reaction with NA in phosphate buffer solution (PBS, pH 5.5). A linear calibration curve for zanamivir in 0.1 M PBS in the absence of NA was achieved in the concentration range of 1 × 10(-6) to 1 × 10(-5) M (R(2) = 0.99) with an estimated limit of detection (LOD) of 2.29 × 10(-6) M. Furthermore, using its reaction with 1.00 × 10(-5) M zanamivir, a linear calibration curve of NA can be obtained in the concentration range of 0-12 mU (R(2) = 0.99) with an estimated LOD of 0.12 mU. High reproducibility was shown with a relative standard deviation (RSD) of 1.14% (n = 30). These performances could be maintained when the detection was performed in mucin matrix. Comparison performed using gold-modified BDD (Au-BDD) electrodes suggested that the good performance of the detection method is due to the stability of the gold particles position at the BDD surface.

  4. Unraveling the formation mechanism of graphitic nitrogen-doping in thermally treated graphene with ammonia

    PubMed Central

    Li, Xiao-Fei; Lian, Ke-Yan; Liu, Lingling; Wu, Yingchao; Qiu, Qi; Jiang, Jun; Deng, Mingsen; Luo, Yi

    2016-01-01

    Nitrogen-doped graphene (N-graphene) has attractive properties that has been widely studied over the years. However, its possible formation process still remains unclear. Here, we propose a highly feasible formation mechanism of the graphitic-N doing in thermally treated graphene with ammonia by performing ab initio molecular dynamic simulations at experimental conditions. Results show that among the commonly native point defects in graphene, only the single vacancy 5–9 and divacancy 555–777 have the desirable electronic structures to trap N-containing groups and to mediate the subsequent dehydrogenation processes. The local structure of the defective graphene in combining with the thermodynamic and kinetic effect plays a crucial role in dominating the complex atomic rearrangement to form graphitic-N which heals the corresponding defect perfectly. The importance of the symmetry, the localized force field, the interaction of multiple trapped N-containing groups, as well as the catalytic effect of the temporarily formed bridge-N are emphasized, and the predicted doping configuration agrees well with the experimental observation. Hence, the revealed mechanism will be helpful for realizing the targeted synthesis of N-graphene with reduced defects and desired properties. PMID:27002190

  5. Hierarchical porous nitrogen-doped partial graphitized carbon monoliths for supercapacitor

    NASA Astrophysics Data System (ADS)

    Yu, Yifeng; Du, Juan; Liu, Lei; Wang, Guoxu; Zhang, Hongliang; Chen, Aibing

    2017-03-01

    Porous carbon monoliths have attracted great interest in many fields due to their easy availability, large specific surface area, desirable electronic conductivity, and tunable pore structure. In this work, hierarchical porous nitrogen-doped partial graphitized carbon monoliths (N-MC-Fe) with ordered mesoporous have been successfully synthesized by using resorcinol-formaldehyde as precursors, iron salts as catalyst, and mixed triblock copolymers as templates via a one-step hydrothermal method. In the reactant system, hexamethylenetetramine (HMT) is used as nitrogen source and one of the carbon precursors under hydrothermal conditions instead of using toxic formaldehyde. The N-MC-Fe show hierarchically porous structures, with interconnected macroporous and ordered hexagonally arranged mesoporous. Nitrogen element is in situ doped into carbon through decomposition of HMT. Iron catalyst is helpful to improve the graphitization degree and pore volume of N-MC-Fe. The synthesis strategy is user-friendly, cost-effective, and can be easily scaled up for production. As supercapacitors, the N-MC-Fe show good capacity with high specific capacitance and good electrochemical stability.

  6. A FeCl2-graphite sandwich composite with Cl doping in graphite layers: a new anode material for high-performance Li-ion batteries

    NASA Astrophysics Data System (ADS)

    Wang, Lili; Guo, Cong; Zhu, Yongchun; Zhou, Jianbin; Fan, Long; Qian, Yitai

    2014-11-01

    A composite with FeCl2 nanocrystals sandwiched between Cl-doped graphite layers has been created via a space-confined nanoreactor strategy. This composite can be used as a new type of anode material for Li-ion batteries, which exhibit high reversible capacity and superior rate capability with excellent cycle life.A composite with FeCl2 nanocrystals sandwiched between Cl-doped graphite layers has been created via a space-confined nanoreactor strategy. This composite can be used as a new type of anode material for Li-ion batteries, which exhibit high reversible capacity and superior rate capability with excellent cycle life. Electronic supplementary information (ESI) available: Experimental section and Fig. S1-S8. See DOI: 10.1039/c4nr05070c

  7. Electron-beam-induced substitutional carbon doping of boron nitride nanosheets, nanoribbons, and nanotubes.

    PubMed

    Wei, Xianlong; Wang, Ming-Sheng; Bando, Yoshio; Golberg, Dmitri

    2011-04-26

    Substitutional carbon doping of the honeycomb-like boron nitride (BN) lattices in two-dimensional (nanosheets) and one-dimensional (nanoribbons and nanotubes) nanostructures was achieved via in situ electron beam irradiation in an energy-filtering 300 kV high-resolution transmission electron microscope using a C atoms feedstock intentionally introduced into the microscope. The C substitutions for B and N atoms in the honeycomb lattices were demonstrated through electron energy loss spectroscopy, spatially resolved energy-filtered elemental mapping, and in situ electrical measurements. The preferential doping was found to occur at the sites more vulnerable to electron beam irradiation. This transformed BN nanostructures from electrical insulators to conductors. It was shown that B and N atoms in a BN nanotube could be nearly completely replaced with C atoms via electron-beam-induced doping. The doping mechanism was proposed to rely on the knockout ejections of B and N atoms and subsequent healing of vacancies with supplying C atoms.

  8. Bipolar doping of double-layer graphene vertical heterostructures with hydrogenated boron nitride.

    PubMed

    Liu, Zhun; Wang, Ru-Zhi; Liu, Li-Min; Lau, Woon-Ming; Yan, Hui

    2015-05-07

    Using first-principles calculations, we examined the bipolar doping of double-layer graphene vertical heterostructures, which are constructed by hydrogenated boron nitride (BN) sheets sandwiched into two parallel graphene monolayers. The built-in potential difference in hydrogenated BN breaks the interlayer symmetry, resulting in the p- and n-type doping of two graphene layers at 0.83 and -0.8 eV, respectively. By tuning the interlayer spacing between the graphene and hydrogenated BN, the interfacial dipole and screening charge distribution can be significantly affected, which produces large modulations in band alignments, doping levels and tunnel barriers. Furthermore, we present an analytical model to predicate the doping level as a function of the average interlayer spacing. With large interlayer spacings, the "pillow effect" (Pauli repulsion at the highly charge overlapped interface) is diminished and the calculated Dirac point shifts are in good accordance with our prediction models. Our investigations suggest that this double-layer graphene heterostructures constructed using two-dimensional Janus anisotropic materials offer exciting opportunities for developing novel nanoscale optoelectronic and electronic devices.

  9. A practical guide to using boron doped diamond in electrochemical research.

    PubMed

    Macpherson, Julie V

    2015-02-07

    Conducting, boron doped diamond (BDD), in addition to its superior material properties, offers several notable attributes to the electrochemist making it an intriguing material for electrochemical research. These include the widest solvent window of all electrode materials; low background and capacitive currents; reduced fouling compared to other electrodes and; the ability to withstand extreme potentials, corrosive and high temperature/pressure environments. However, BDD is not your typical electrode material, it is a semi-conductor doped degenerately with boron to present semi-metallic characteristics. Input from materials scientists, chemists and physicists has been required to aid understanding of how to work with this material from an electrochemical viewpoint and improve electrode quality. Importantly, depending on how the BDD has been grown and then subsequently treated, prior to electrochemical measurement, the resulting material properties can vary quite significantly from one electrode to the next. This likely explains the variability seen by different researchers working on the same experimental systems. The aim of this "protocols" article is not to provide a state-of-the-art review of diamond electrochemistry, suitable references are provided to the interested reader, but instead serves as a reference point for any researcher wishing to commence work with diamond electrodes and interpret electrochemical data. It provides information on how best to characterise the material properties of the electrode before use and outlines the interplay between boron dopant density, non-diamond-carbon content, grain morphology, surface chemistry and redox couple identity. All should ideally be considered when interpretating electrochemical data arising from the diamond electrode. This will aid the reader in making meaningful comparisons between data obtained by different researchers using different diamond electrodes. The guide also aims to help educate the researcher

  10. Electrolyzing synthesis of boron-doped graphene quantum dots for fluorescence determination of Fe(3+) ions in water samples.

    PubMed

    Chen, Li; Wu, Chuanli; Du, Pan; Feng, Xiaowei; Wu, Ping; Cai, Chenxin

    2017-03-01

    This work reports a facile electrolyzing method to synthesize boron-doped graphene quantum dots (BGQDs) and uses the BGQDs as a fluorescent probe to determine Fe(3+) ion levels in water samples. The BGQDs were produced by oxidizing graphite in an aqueous borax solution at pH 7; then, the borate solution was filtered with BGQDs, and the borate was dialyzed from the filtrate, leaving a solution of BGQDs in water. The amount of the B in the BGQDs can be adjusted by changing the concentration of borax used for the electrolyte. The excitation wavelength- and B amount-dependent fluorescence characteristics of BQGDs were studied. The fluorescence intensity of the BGQDs is measurable in real time, and its quenching is very sensitive to the concentration of Fe(3+) ions in the system but not to other possible coexisting metal ions. The fluorescence quenching mechanism of Fe(3+) ions to BGQDs is studied and explained based on electrochemical voltammetry and DFT simulations. The analytical signal, which is defined as F0/F, where F0 and F are the fluorescence intensities of the BGQDs before and after interaction with Fe(3+) ions, respectively, displays a good linear relationship in the Fe(3+) ion concentration range of 0.01-100µm with a correlation coefficient of 0.999 and a limit of detection (LOD) of ~(0.005±0.001) μM. The LOD value is much lower than the water quality standards for Fe(3+) ions (0.3ppm, ~5.36µm) in drinking water suggested by the WHO (World Health Organization) and EPA (U.S. Environmental Protection Agency), implying that this method has great potential for applications in real sample assays. For example, the determination of the Fe(3+) ion levels in three water samples (tap water, groundwater, and lake water) gives approximately the same results as those determined by the EPA-recommended AAS (atomic adsorption spectroscopy) method.

  11. Boron concentration profiling by high angle annular dark field-scanning transmission electron microscopy in homoepitaxial δ-doped diamond layers

    SciTech Connect

    Araújo, D.; Alegre, M. P.; Piñero, J. C.; Fiori, A.; Bustarret, E.; Jomard, F.

    2013-07-22

    To develop further diamond related devices, the concentration and spatial location of dopants should be controlled down to the nanometer scale. Scanning transmission electron microscopy using the high angle annular dark field mode is shown to be sensitive to boron doping in diamond epilayers. An analytical procedure is described, whereby local boron concentrations above 10{sup 20} cm{sup −3} were quantitatively derived down to nanometer resolution from the signal dependence on thickness and boron content. Experimental boron local doping profiles measured on diamond p{sup −}/p{sup ++}/p{sup −} multilayers are compared to macroscopic profiles obtained by secondary ion mass spectrometry, avoiding reported artefacts.

  12. Synthesis of boron-doped g-C3N4 with enhanced electro-catalytic activity and stability

    NASA Astrophysics Data System (ADS)

    Zhang, Suyun; Gao, Lina; Fan, Dongliang; Lv, Xiaomeng; Li, Yuan; Yan, Zaoxue

    2017-03-01

    Herein, we rationally designed 3D carbon nitride hierarchical architecture with an interconnected network of graphene-analogue nanosheets and doped with boron through co-condensation strategy. XPS spectra confirmed the incorporation of boron atoms in the polymeric g-C3N4, while X-ray diffraction and IR indicated the characteristic structural properties of pristine g-C3N4 and boron-doped g-C3N4 (Bx-GCN). The Bx-GCN shows promising electrocatalytic activity and stability in the reduction of p-nitrophenol according to cyclic voltammograms analysis. Additionally, the use of this metal-free, organic, semiconducting polymer as an electrocatalyst would open wide application of hybrid carbon nitride materials from both point view of economy and environment.

  13. Doped Boron Carbide-Based Polymers: Fundamental Studies of a Novel Class of Materials for Enhanced Neutron Detection

    DTIC Science & Technology

    2016-03-01

    Jeffry A. Kelber, Peter A. Dowben 17 Patent Applications : QNTM-0004-PCT Novel Semiconducting Alloy Polymers Formed from...Doped boron carbide-based polymers : Fundamental studies of a novel class of materials for enhanced neutron detection Distribution Statement A...DISTRIBUTION LIST, OR IF THE ADDRESSEE IS NO LONGER EMPLOYED BY YOUR ORGANIZATION . REPORT DOCUMENTATION PAGE Form Approved OMB No

  14. Boron-doped graphene as promising support for platinum catalyst with superior activity towards the methanol electrooxidation reaction

    NASA Astrophysics Data System (ADS)

    Sun, Yongrong; Du, Chunyu; An, Meichen; Du, Lei; Tan, Qiang; Liu, Chuntao; Gao, Yunzhi; Yin, Geping

    2015-12-01

    We report the synthesis of boron-doped graphene by thermally annealing the mixture of graphene oxide and boric acid, and its usage as the support of Pt catalyst towards the methanol oxidation reaction. The composition, structure and morphology of boron-doped graphene and its supported Pt nanoparticles (Pt/BG) are characterized by transmission electron microscopy, inductively coupled plasma mass spectrometry, Raman spectroscopy, X-ray diffraction and X-ray photoelectron spectroscopy. It is revealed that boron atoms are doped into graphene network in the form of BC2O and BCO2 bonds, which lead to the increase in defect sites and facilitate the subsequent deposition of Pt nanoparticles. Therefore, the Pt/BG catalyst presents smaller particle size and narrower size distribution than the graphene supported Pt (Pt/G) catalyst. When evaluated as the electrocatalyst for the methanol oxidation reaction, the Pt/BG catalyst exhibits excellent electrochemical activity and stability demonstrated by cyclic voltammetry and chronoamperometry tests. The enhanced activity is mainly ascribed to the electronic interaction between boron-doped graphene and Pt nanoparticles, which lowers the d-band center of Pt and thus weakens the absorption of the poisoning intermediate CO. Our work provides an alternative approach of improving the reaction kinetics for the oxidation of small organic molecules.

  15. Cathodic reductive coupling of methyl cinnamate on boron-doped diamond electrodes and synthesis of new neolignan-type products.

    PubMed

    Kojima, Taiki; Obata, Rika; Saito, Tsuyoshi; Einaga, Yasuaki; Nishiyama, Shigeru

    2015-01-01

    The electroreduction reaction of methyl cinnamate on a boron-doped diamond (BDD) electrode was investigated. The hydrodimer, dimethyl 3,4-diphenylhexanedioate (racemate/meso = 74:26), was obtained in 85% yield as the major product, along with small amounts of cyclic methyl 5-oxo-2,3-diphenylcyclopentane-1-carboxylate. Two new neolignan-type products were synthesized from the hydrodimer.

  16. Can metal-free silicon-doped hexagonal boron nitride nanosheets and nanotubes exhibit activity toward CO oxidation?

    PubMed

    Lin, Sen; Ye, Xinxin; Huang, Jing

    2015-01-14

    Si-doped hexagonal boron nitride nanosheets (Si-BNNS) and nanotubes (Si-BNNT) have been investigated by first-principle methods. The strong interaction between the silicon atom and the hexagonal boron nitride nanosheet or nanotube with a boron vacancy indicates that such nanocomposites should be very stable. The significant charge transfer from the Si-BNNS substrate to the O2 molecule, which could occupy the antibonding 2π* orbitals of O2, results in the activation of the adsorbed O2. The catalytic activity of the Si-BNNS for CO oxidation is explored and the calculated barrier (0.29 eV) of the reaction CO + O2→ CO2 + O is much lower than those on the traditional noble metals. This opens a new avenue to fabricate low cost and high activity boron nitride-based metal-free catalysts.

  17. Effect of boron on carbon-fiber microstructure and reactivity

    SciTech Connect

    Jones, L.E.

    1987-01-01

    A mesophase pitch P55 and a PAN T-300 carbon filter were substitutionally doped with boron at concentration levels ranging from 4 x 10/sup -5/ to 0.05 B/C atom ratio. Boron enhanced graphitization in these fibers at concentrations greater than 2 x 10/sup -4/ B/C. Below this concentration level, the microstructure of the pitch P55 fiber was unaffected. High concentrations of boron were found to modulate the (001) diffraction profiles in both fibers. This indicated the presence of two separate graphite fractions in the same fiber (one fraction was much more turbostratic than the other). The presence of boron was also found to increase the L/sub c/ and decrease the L/sub a/ dimensions of the more graphitic fractions of the fiber structure. The decrease in the L/sub a/ is the result of an increase in tilt boundaries along the a direction, parallel to the fiber axis. The presence of boron inhibits fiber gasification. The cause of gasification inhibition at high boron concentrations is related to changes in the fiber microstructure; however, there is a pronounced effect of specific-site blockage by an oxide of boron that develops on the surface during gasification. At relatively low boron concentrations, decrease in the reactivity of the fiber was correlated to changes in fiber electronic structure which, in turn, influences the chemistry of the active surface sites.

  18. Effects of nano-sized boron nitride (BN) reinforcement in expandable graphite based in-tumescent fire retardant coating

    NASA Astrophysics Data System (ADS)

    Zulkurnain, E. S.; Ahmad, F.; Gillani, Q. F.

    2016-08-01

    The purpose of in-tumescent fire retardant coating (IFRC) is to protect substrate from fire attack by limiting heat transfer. A range of coating formulations have been prepared using Bisphenol A epoxy resin BE-188 and polyamide solidifier H-2310 as two-part binder, ammonium polyphosphate (APP) as acid source, melamine (MEL) as the blowing agent, expandable graphite (EG) as carbon source and nano-boron nitride (BN) as inorganic nano filler. The filler was used to improve the performances of the APP-EG-MEL coating. The effects of nano-BN on the char morphology and thermal degradation were investigated by fire test, thermo gravimetric analysis (TGA), Fourier transform infrared spectroscopy (FTIR), X- ray photoelectron spectroscopy (XPS) and field emission scanning electron microscopy (FESEM). The results showed that by substituting or reinforcing of 4% weight percentage of nano-BN, residual weight of the char increases by 23.82% compared to APP-EG-MEL coating without filler. Higher carbon content was obtained in the char and a more compact char was produced. The results indicated that nano-BN could be used as a filler to improve thermal stability of the APP-EG-MEL coating.

  19. Preparation of calcium-doped boron nitride by pulsed laser deposition

    SciTech Connect

    Anzai, Atsushi; Fuchigami, Masayo; Yamanaka, Shoji; Inumaru, Kei

    2012-08-15

    Highlights: ► Ca-doped boron nitride was prepared by pulsed laser deposition. ► The films do not have long range order structure in terms of XRD. ► But the films had short-range order structure of h-BN sheets. ► Ca-free films had the same optical band gap as crystalline bulk h-BN (5.8 eV.) ► Ca-doping brought about decreases of the optical band gap by ca. 0.4 eV. -- Abstract: Calcium-doped BN thin films Ca{sub x}BN{sub y} (x = 0.05–0.1, y = 0.7–0.9) were grown on α-Al{sub 2}O{sub 3}(0 0 1) substrates by pulsed laser deposition (PLD) using h-BN and Ca{sub 3}N{sub 2} disks as the targets under nitrogen radical irradiation. Infrared ATR spectra demonstrated the formation of short range ordered structure of BN hexagonal sheets, while X-ray diffraction gave no peak indicating the absence of long-range order structure in the films. It was notable that Ca-doped film had 5.45–5.55 eV of optical band gap, while the band gap of Ca-free films was 5.80–5.85 eV. This change in the band gap is ascribed to interaction of Ca with the BN sheets; first principle calculations on h-BN structure indicated that variation of inter-plane distance between the BN layers did not affect the band gap. This study highlights that PLD could prepare BN having short-range structure of h-BN sheets and being doped with electropositive cation which varies the optical band gap of the films.

  20. Can trans-polyacetylene be formed on single-walled carbon-doped boron nitride nanotubes?

    PubMed

    Chen, Ying; Wang, Hong-xia; Zhao, Jing-xiang; Cai, Qing-hai; Wang, Xiao-guang; Wang, Xuan-zhang

    2012-07-01

    Recently, the grafting of polymer chains onto nanotubes has attracted increasing attention as it can potentially be used to enhance the solubility of nanotubes and in the development of novel nanotube-based devices. In this article, based on density functional theory (DFT) calculations, we report the formation of trans-polyacetylene on single-walled carbon-doped boron nitride nanotubes (BNNTs) through their adsorption of a series of C(2)H(2) molecules. The results show that, rather than through [2 + 2] cycloaddition, an individualmolecule would preferentially attach to a carbon-doped BNNT via "carbon attack" (i.e., a carbon in the C(2)H(2) attacks a site on the BNNT). The adsorption energy gradually decreases with increasing tube diameter. The free radical of the carbon-doped BNNT is almost completely transferred to the carbon atom at the end of the adsorbed C(2)H(2) molecule. When another C(2)H(2) molecule approaches the carbon-doped BNNT, it is most energetically favorable for this C(2)H(2) molecule to be adsorbed at the end of the previously adsorbed C(2)H(2) molecule, and so on with extra C(2)H(2) molecules, leading to the formation of polyacetylene on the nanotube. The spin of the whole system is always localized at the tip of the polyacetylene formed, which initiates the adsorption of the incoming species. The present results imply that carbon-doped BNNT is an effective "metal-free" initiator for the formation of polyacetylene.

  1. Determination of active doping in highly resistive boron doped silicon nanocrystals embedded in SiO2 by capacitance voltage measurement on inverted metal oxide semiconductor structure

    NASA Astrophysics Data System (ADS)

    Zhang, Tian; Puthen-Veettil, Binesh; Wu, Lingfeng; Jia, Xuguang; Lin, Ziyun; Yang, Terry Chien-Jen; Conibeer, Gavin; Perez-Wurfl, Ivan

    2015-10-01

    We investigate the Capacitance-Voltage (CV) measurement to study the electrically active boron doping in Si nanocrystals (ncSi) embedded in SiO2. The ncSi thin films with high resistivity (200-400 Ω cm) can be measured by using an inverted metal oxide semiconductor (MOS) structure (Al/ncSi (B)/SiO2/Si). This device structure eliminates the complications from the effects of lateral current flow and the high sheet resistance in standard lateral MOS structures. The characteristic MOS CV curves observed are consistent with the effective p-type doping. The CV modeling method is presented and used to evaluate the electrically active doping concentration. We find that the highly boron doped ncSi films have electrically active doping of 1018-1019 cm-3 despite their high resistivity. The saturation of doping at about 1.4 × 1019 cm-3 and the low doping efficiency less than 5% are observed and discussed. The calculated effective mobility is in the order of 10-3 cm2/V s, indicating strong impurity/defect scattering effect that hinders carriers transport.

  2. Determination of active doping in highly resistive boron doped silicon nanocrystals embedded in SiO{sub 2} by capacitance voltage measurement on inverted metal oxide semiconductor structure

    SciTech Connect

    Zhang, Tian Puthen-Veettil, Binesh; Wu, Lingfeng; Jia, Xuguang; Lin, Ziyun; Yang, Terry Chien-Jen; Conibeer, Gavin; Perez-Wurfl, Ivan

    2015-10-21

    We investigate the Capacitance-Voltage (CV) measurement to study the electrically active boron doping in Si nanocrystals (ncSi) embedded in SiO{sub 2}. The ncSi thin films with high resistivity (200–400 Ω cm) can be measured by using an inverted metal oxide semiconductor (MOS) structure (Al/ncSi (B)/SiO{sub 2}/Si). This device structure eliminates the complications from the effects of lateral current flow and the high sheet resistance in standard lateral MOS structures. The characteristic MOS CV curves observed are consistent with the effective p-type doping. The CV modeling method is presented and used to evaluate the electrically active doping concentration. We find that the highly boron doped ncSi films have electrically active doping of 10{sup 18}–10{sup 19 }cm{sup −3} despite their high resistivity. The saturation of doping at about 1.4 × 10{sup 19 }cm{sup −3} and the low doping efficiency less than 5% are observed and discussed. The calculated effective mobility is in the order of 10{sup −3} cm{sup 2}/V s, indicating strong impurity/defect scattering effect that hinders carriers transport.

  3. Investigation on cubic boron nitride crystals doped with Si by high temperature thermal diffusion

    NASA Astrophysics Data System (ADS)

    Li, Xinlu; Feng, Shuang; Liu, Xiuhuan; Hou, Lixin; Gao, Yanjun; Wang, Qi; Liu, Nian; Zhang, Hai; Chen, Zhanguo; Zheng, Jie; Jia, Gang

    2014-07-01

    The method of high temperature thermal diffusion was successfully applied for doping Si impurities into cubic boron nitride (cBN) crystals. X-ray photoelectron spectra (XPS) and the current-voltage (I-V) characteristics at different temperatures were respectively used for analyzing the chemical states and the activation energy of Si impurity in cBN. According to the XPS results, Si impurities mainly replace B atoms bonding with the adjacent N atoms and become donors in cBN. Without surface cleaning, there are a lot of C and O contaminations on the surface of cBN, so a small quantity of C-Si and Si-N-O bonds also exist at the surface of cBN. Most Si impurities distribute in the shallow layer underneath the surface of cBN. Based on the electric measurement, Si impurities in cBN usually have the activation energy beyond 0.4 eV, and they can only be slightly ionized at room temperature, therefore the resistivity of Si-doped cBN is still high, and the space charge limited current becomes the main conductive mechanism in cBN. However, the conductivity of Si-doped cBN can rapidly increase with the temperature. In addition, the activation energy and the concentration of Si impurity in cBN can be affected by the temperature and the time of thermal diffusion, which needs to be verified further.

  4. Effects of domain size on x-ray absorption spectra of boron nitride doped graphenes

    NASA Astrophysics Data System (ADS)

    Li, Xin; Hua, Weijie; Wang, Bo-Yao; Pong, Way-Faung; Glans, Per-Anders; Guo, Jinghua; Luo, Yi

    2016-08-01

    Doping is an efficient way to open the zero band gap of graphene. The control of the dopant domain size allows us to tailor the electronic structure and the properties of the graphene. We have studied the electronic structure of boron nitride doped graphenes with different domain sizes by simulating their near-edge X-ray absorption fine structure (NEXAFS) spectra at the N K-edge. Six different doping configurations (five quantum dot type and one phase-separated zigzag-edged type) were chosen, and N K-edge NEXAFS spectra were calculated with large truncated cluster models by using the density functional theory with hybrid functional and the equivalent core hole approximation. The opening of the band gap as a function of the domain size is revealed. We found that nitrogens in the dopant boundary contribute a weaker, red-shifted π* peak in the spectra as compared to those in the dopant domain center. The shift is related to the fact that these interfacial nitrogens dominate the lowest conduction band of the system. Upon increasing the domain size, the ratio of interfacial atom decreases, which leads to a blue shift of the π* peak in the total NEXAFS spectra. The spectral evolution agrees well with experiments measured at different BN-dopant concentrations and approaches to that of a pristine h-BN sheet.

  5. Electronic and physico-chemical properties of nanometric boron delta-doped diamond structures

    SciTech Connect

    Chicot, G. Fiori, A.; Tran Thi, T. N.; Bousquet, J.; Delahaye, J.; Grenet, T.; Eon, D.; Omnès, F.; Bustarret, E.; Volpe, P. N.; Tranchant, N.; Mer-Calfati, C.; Arnault, J. C.; Gerbedoen, J. C.; Soltani, A.; De Jaeger, J. C.; Alegre, M. P.; Piñero, J. C.; Araújo, D.; Jomard, F.; and others

    2014-08-28

    Heavily boron doped diamond epilayers with thicknesses ranging from 40 to less than 2 nm and buried between nominally undoped thicker layers have been grown in two different reactors. Two types of [100]-oriented single crystal diamond substrates were used after being characterized by X-ray white beam topography. The chemical composition and thickness of these so-called delta-doped structures have been studied by secondary ion mass spectrometry, transmission electron microscopy, and spectroscopic ellipsometry. Temperature-dependent Hall effect and four probe resistivity measurements have been performed on mesa-patterned Hall bars. The temperature dependence of the hole sheet carrier density and mobility has been investigated over a broad temperature range (6 K < T < 450 K). Depending on the sample, metallic or non-metallic behavior was observed. A hopping conduction mechanism with an anomalous hopping exponent was detected in the non-metallic samples. All metallic delta-doped layers exhibited the same mobility value, around 3.6 ± 0.8 cm{sup 2}/Vs, independently of the layer thickness and the substrate type. Comparison with previously published data and theoretical calculations showed that scattering by ionized impurities explained only partially this low common value. None of the delta-layers showed any sign of confinement-induced mobility enhancement, even for thicknesses lower than 2 nm.

  6. Effects of boron and glass hybrid epoxy-composites on graphite-fiber release in an aircraft fire

    NASA Technical Reports Server (NTRS)

    Tompkins, S. S.; Brewer, W. D.

    1979-01-01

    Recent studies have shown that the benefits gained by using graphite-epoxy composite structures may not be realized without some risk. The graphite fibers are very good electrical conductors and fibers released into the environment during a fire create a possible hazard to electrical equipment. Several graphite-epoxy hybrids were exposed to a fire and simulated explosion and their graphite fiber retention characteristics were examined. Several low melting-temperature glasses which wet and clump graphite-fibers and a glass/graphite fabric which reduced impact damage were identified as promising hybridizing components to minimize graphite fiber release.

  7. Hierarchically controlled helical graphite films prepared from iodine-doped helical polyacetylene films using morphology-retaining carbonization.

    PubMed

    Matsushita, Satoshi; Kyotani, Mutsumasa; Akagi, Kazuo

    2011-11-09

    One-handed helical graphite films with a hierarchically controlled morphology were prepared from iodine-doped helical polyacetylene (H-PA) films using the recently developed morphology-retaining carbonization method. Results from scanning electron microscopy indicate that the hierarchical helical morphology of the H-PA film remains unchanged even after carbonization at 800 °C. The weight loss of the film due to carbonization was very small; only 10-29% of the weight of the film before doping was lost. Furthermore, the graphite film prepared by subsequent heating at 2600 °C retained the same morphology as that of the original H-PA film and that of the helical carbon film prepared at 800 °C. The screwed direction, twisted degree, and vertical or horizontal alignment of the helical graphite film were well controlled by changing the helical sense, helical pitch, and orientation state of the chiral nematic liquid crystal (N*-LC) used as an asymmetric LC reaction field. X-ray diffraction and Raman scattering measurements showed that graphitic crystallization proceeds in the carbon film during heat treatment at 2600 °C. Transmission electron microscopy measurements indicate that ultrasonication of the helical graphite film in ethanol for several hours gives rise to a single helical graphite fibril. The profound potentiality of the present graphite films is exemplified in their electrical properties. The horizontally aligned helical graphite film exhibits an enhancement in electrical conductivity and an evolution of electrical anisotropy in which conductivity parallel to the helical axis of the fibril bundle is higher than that perpendicular to the axis.

  8. Evaluation of freestanding boron-doped diamond grown by chemical vapour deposition as substrates for vertical power electronic devices

    SciTech Connect

    Issaoui, R.; Achard, J.; Tallaire, A.; Silva, F.; Gicquel, A.; Bisaro, R.; Servet, B.; Garry, G.; Barjon, J.

    2012-03-19

    In this study, 4 x 4 mm{sup 2} freestanding boron-doped diamond single crystals with thickness up to 260 {mu}m have been fabricated by plasma assisted chemical vapour deposition. The boron concentrations measured by secondary ion mass spectroscopy were 10{sup 18} to 10{sup 20} cm{sup -3} which is in a good agreement with the values calculated from Fourier transform infrared spectroscopy analysis, thus indicating that almost all incorporated boron is electrically active. The dependence of lattice parameters and crystal mosaicity on boron concentrations have also been extracted from high resolution x-ray diffraction experiments on (004) planes. The widths of x-ray rocking curves have globally shown the high quality of the material despite a substantial broadening of the peak, indicating a decrease of structural quality with increasing boron doping levels. Finally, the suitability of these crystals for the development of vertical power electronic devices has been confirmed by four-point probe measurements from which electrical resistivities as low as 0.26 {Omega} cm have been obtained.

  9. Delimiting the boron influence on the adsorptive properties of water and rad OH radicals on H-terminated Boron Doped Diamond catalysts: A Density Functional Theory analysis

    NASA Astrophysics Data System (ADS)

    Jaimes, Raciel; Vazquez-Arenas, Jorge; González, Ignacio; Galván, Marcelo

    2016-11-01

    Motivated for the success of Boron Doped Diamond (BDD) in electrocatalysis, where water and hydroxyl radical interactions play an overriding role on surface reactivity, this study presents a Density Functional Theory (DFT) analysis intended to correlate its structure and reactivity. H-terminated periodic surfaces (supercells 5 × 5) with atomic composition of one boron per 150 C atoms are used for these purposes, and where B position was varied in different layers. Analyses of total density of states (TDOS), localization of occupied and unoccupied states near the Fermi level and adsorption energies show that the effect of B doping on surface reactivity decreases as a function of its vertical distance from the BDD surface, and it is restricted to the first three surface layers. The adsorption free energy calculated for a water molecule corroborates the hydrophobic nature of these surfaces, becoming more repulsive as B is located within the first three surface layers. In contrast, the free energy computed for hydroxyl radical is always exergonic. Hydrogen abstraction by hydroxyl radical is an energy-enabled process for all surface hydrogens, regardless if they are bonded to C or B atoms, becoming more energetic when hydrogen is directly bonded to B or its nearest neighbor carbon, while other abstractions present very similar adsorption energies than in the absence of boron.

  10. Relaxation of the resistive superconducting state in boron-doped diamond films

    NASA Astrophysics Data System (ADS)

    Kardakova, A.; Shishkin, A.; Semenov, A.; Goltsman, G. N.; Ryabchun, S.; Klapwijk, T. M.; Bousquet, J.; Eon, D.; Sacépé, B.; Klein, Th.; Bustarret, E.

    2016-02-01

    We report a study of the relaxation time of the restoration of the resistive superconducting state in single crystalline boron-doped diamond using amplitude-modulated absorption of (sub-)THz radiation (AMAR). The films grown on an insulating diamond substrate have a low carrier density of about 2.5 ×1021cm-3 and a critical temperature of about 2 K . By changing the modulation frequency we find a high-frequency rolloff which we associate with the characteristic time of energy relaxation between the electron and the phonon systems or the relaxation time for nonequilibrium superconductivity. Our main result is that the electron-phonon scattering time varies clearly as T-2, over the accessible temperature range of 1.7 to 2.2 K. In addition, we find, upon approaching the critical temperature Tc, evidence for an increasing relaxation time on both sides of Tc.

  11. Excitonic luminescence of SiGe/Si quantum wells δ-doped with boron

    SciTech Connect

    Bagaev, V. S.; Nikolaev, S. N.; Onishchenko, E. E.; Pruchkina, A. A.; Krivobok, V. S.; Novikov, A. V.

    2015-05-14

    Low-temperature photoluminescence of undoped and moderately δ-doped Si{sub 1−x}Ge{sub x}/Si (x < 0.1) quantum wells has been studied. The influence of boron δ-layer on the excitonic luminescence and the luminescence caused by a dense electron plasma was demonstrated. The conditions under which the luminescence spectra of quantum wells are dominated by impurity-bound excitons (BE) have been established. Some unusual properties of these BE are explained in terms of type II band-offset in Si{sub 1−x}Ge{sub x}/Si (x < 0.1) quantum wells, which favors a spatial separation of electrons and holes. It is shown that the temperature dependence of an excitonic emission in the quantum wells allows to calculate the BE-related density of states and, thus, can be used for contactless estimation of the impurity concentration in quantum wells.

  12. High temperature surface Brillouin scattering study of mechanical properties of boron-doped epitaxial polysilicon

    NASA Astrophysics Data System (ADS)

    Mathe, B. A.; Comins, JD; Every, A. G.; Hobbs, L. W.

    2017-02-01

    A study of the mechanical properties of a boron-doped epitaxial polysilicon layer deposited on a Si (100) substrate specimen has been carried out by surface Brillouin scattering at high temperatures. This type of specimen is widely used in micro-electro-mechanical systems (MEMS). By accumulating spectra with the Rayleigh mode and the Lamb continuum the isotropic elastic constants C44 and C11 were obtained, from which the values of the bulk, shear and Young's moduli and Poisson's ratio for the layer were determined over a range of temperatures from 20 °C to 110 °C. By contrast, an examination of the literature on polycrystalline silicon shows that other methods each provide a limited range of the above properties and thus additional experiments and techniques were needed. The SBS method is applicable to other polycrystalline materials such as silicon carbide, silicon nitride, silicon germanium and amorphous diamond that have also been used for MEMS applications.

  13. Boron doped graphene wrapped silver nanowires as an efficient electrocatalyst for molecular oxygen reduction

    NASA Astrophysics Data System (ADS)

    Nair, Anju K.; Thazhe Veettil, Vineesh; Kalarikkal, Nandakumar; Thomas, Sabu; Kala, M. S.; Sahajwalla, Veena; Joshi, Rakesh K.; Alwarappan, Subbiah

    2016-12-01

    Metal nanowires exhibit unusually high catalytic activity towards oxygen reduction reaction (ORR) due to their inherent electronic structures. However, controllable synthesis of stable nanowires still remains as a daunting challenge. Herein, we report the in situ synthesis of silver nanowires (AgNWs) over boron doped graphene sheets (BG) and demonstrated its efficient electrocatalytic activity towards ORR for the first time. The electrocatalytic ORR efficacy of BG-AgNW is studied using various voltammetric techniques. The BG wrapped AgNWs shows excellent ORR activity, with very high onset potential and current density and it followed four electron transfer mechanism with high methanol tolerance and stability towards ORR. The results are comparable to the commercially available 20% Pt/C in terms of performance.

  14. Simultaneous detection of iodine and iodide on boron doped diamond electrodes.

    PubMed

    Fierro, Stéphane; Comninellis, Christos; Einaga, Yasuaki

    2013-01-15

    Individual and simultaneous electrochemical detection of iodide and iodine has been performed via cyclic voltammetry on boron doped diamond (BDD) electrodes in a 1M NaClO(4) (pH 8) solution, representative of typical environmental water conditions. It is feasible to compute accurate calibration curve for both compounds using cyclic voltammetry measurements by determining the peak current intensities as a function of the concentration. A lower detection limit of about 20 μM was obtained for iodide and 10 μM for iodine. Based on the comparison between the peak current intensities reported during the oxidation of KI, it is probable that iodide (I(-)) is first oxidized in a single step to yield iodine (I(2)). The latter is further oxidized to obtain IO(3)(-). This technique, however, did not allow for a reasonably accurate detection of iodate (IO(3)(-)) on a BDD electrode.

  15. Boron-doped diamond electrode: Preparation, characterization and application for electrocatalytic degradation of m-dinitrobenzene.

    PubMed

    Bai, Hongmei; He, Ping; Pan, Jing; Chen, Jingchao; Chen, Yang; Dong, Faqing; Li, Hong

    2017-07-01

    Boron-doped diamond (BDD) electrode was successfully prepared via microwave plasma chemical vapor deposition method and it was used in electrocatalytic degradation of m-dinitrobenzene (m-DNB). The electrocatalytic degradation efficiency of m-DNB was evaluated under different experimental parameters including current density, temperature, pH, Na2SO4 concentration and initial m-DNB concentration. Under optimal parameters, degradation efficiency of m-DNB reached up to 82.7% after 150min. The degradation process of m-DNB was fitted well with pseudo first-order kinetics. Moreover, UV and HPLC analyses implied that m-DNB was totally destroyed and mineralized after 240min degradation, and the proposed mechanism during the electrocatalytic degradation process was analyzed. All these results demonstrated that BDD electrode possessed excellent electrocatalytic property and showed a great potential application in wastewater treatment.

  16. Boron Doped Diamond Paste Electrodes for Microfluidic Paper-Based Analytical Devices.

    PubMed

    Nantaphol, Siriwan; Channon, Robert B; Kondo, Takeshi; Siangproh, Weena; Chailapakul, Orawon; Henry, Charles S

    2017-04-04

    Boron doped diamond (BDD) electrodes have exemplary electrochemical properties; however, widespread use of high-quality BDD has previously been limited by material cost and availability. In the present article, we report the use of a BDD paste electrode (BDDPE) coupled with microfluidic paper-based analytical devices (μPADs) to create a low-cost, high-performance electrochemical sensor. The BDDPEs are easy to prepare from a mixture of BDD powder and mineral oil and can be easily stencil-printed into a variety of electrode geometries. We demonstrate the utility and applicability of BDDPEs through measurements of biological species (norepinephrine and serotonin) and heavy metals (Pb and Cd) using μPADs. Compared to traditional carbon paste electrodes (CPE), BDDPEs exhibit a wider potential window, lower capacitive current, and are able to circumvent the fouling of serotonin. These results demonstrate the capability of BDDPEs as point-of-care sensors when coupled with μPADs.

  17. A hybrid density functional study of silicon and phosphorus doped hexagonal boron nitride monolayer

    NASA Astrophysics Data System (ADS)

    Mapasha, R. E.; Igumbor, E.; Chetty, N.

    2016-10-01

    We present a hybrid density functional study of silicon (Si) and phosphorus (P) doped hexagonal boron nitride (h-BN). The local geometry, electronic structure and thermodynamic stability of Si B , Si N , P B and P N are examined using hybrid Heyd-Scuseria- Ernzerhof (HSE) functional. The defect induced buckling and the local bond distances around the defect are sensitive to charge state modulation q = -2, -1, 0, +1 and +2. The +1 charge state is found to be the most energetically stable state and significantly reduces the buckling. Based on the charge state thermodynamic transition levels, we noted that the Si N , Si N and P B defects are too deep to be ionized, and can alter the optical properties of h-BN material.

  18. Chemical Modification of Boron-Doped Diamond Electrodes for Applications to Biosensors and Biosensing.

    PubMed

    Svítková, Jana; Ignat, Teodora; Švorc, Ľubomír; Labuda, Ján; Barek, Jiří

    2016-05-03

    Boron-doped diamond (BDD) is a prospective electrode material that possesses many exceptional properties including wide potential window, low noise, low and stable background current, chemical and mechanical stability, good biocompatibility, and last but not least exceptional resistance to passivation. These characteristics extend its usability in various areas of electrochemistry as evidenced by increasing number of published articles over the past two decades. The idea of chemically modifying BDD electrodes with molecular species attached to the surface for the purpose of creating a rational design has found promising applications in the past few years. BDD electrodes have appeared to be excellent substrate materials for various chemical modifications and subsequent application to biosensors and biosensing. Hence, this article presents modification strategies that have extended applications of BDD electrodes in electroanalytical chemistry. Different methods and steps of surface modification of this electrode material for biosensing and construction of biosensors are discussed.

  19. Surface Modification of Boron-Doped Diamond with Microcrystalline Copper Phthalocyanine: Oxygen Reduction Catalysis.

    PubMed

    Gan, Patrick; Foord, John S; Compton, Richard G

    2015-10-01

    Surface modification of boron-doped diamond (BDD) with copper phthalocyanine was achieved using a simple and convenient dropcast deposition, giving rise to a microcrystalline structure. Both unmodified and modified BDD electrodes of different surface terminations (namely hydrogen and oxygen) were compared via the electrochemical reduction of oxygen in aqueous solution. A significant lowering of the cathodic overpotential by about 500 mV was observed after modification of hydrogen-terminated (hydrophobic) diamond, while no voltammetric peak was seen on modified oxidised (hydrophilic) diamond, signifying greater interaction between copper phthalocyanine and the hydrogen-terminated BDD. Oxygen reduction was found to undergo a two-electron process on the modified hydrogen-terminated diamond, which was shown to be also active for the reduction of hydrogen peroxide. The lack of a further conversion of the peroxide was attributed to its rapid diffusion away from the triple phase boundary at which the reaction is expected to exclusively occur.

  20. Surface Modification of Boron-Doped Diamond with Microcrystalline Copper Phthalocyanine: Oxygen Reduction Catalysis

    PubMed Central

    Gan, Patrick; Foord, John S; Compton, Richard G

    2015-01-01

    Surface modification of boron-doped diamond (BDD) with copper phthalocyanine was achieved using a simple and convenient dropcast deposition, giving rise to a microcrystalline structure. Both unmodified and modified BDD electrodes of different surface terminations (namely hydrogen and oxygen) were compared via the electrochemical reduction of oxygen in aqueous solution. A significant lowering of the cathodic overpotential by about 500 mV was observed after modification of hydrogen-terminated (hydrophobic) diamond, while no voltammetric peak was seen on modified oxidised (hydrophilic) diamond, signifying greater interaction between copper phthalocyanine and the hydrogen-terminated BDD. Oxygen reduction was found to undergo a two-electron process on the modified hydrogen-terminated diamond, which was shown to be also active for the reduction of hydrogen peroxide. The lack of a further conversion of the peroxide was attributed to its rapid diffusion away from the triple phase boundary at which the reaction is expected to exclusively occur. PMID:26491640

  1. In vivo assessment of cancerous tumors using boron doped diamond microelectrode

    NASA Astrophysics Data System (ADS)

    Fierro, Stéphane; Yoshikawa, Momoko; Nagano, Osamu; Yoshimi, Kenji; Saya, Hideyuki; Einaga, Yasuaki

    2012-11-01

    The in vitro and in vivo electrochemical detection of the reduced form of glutathione (L-γ-glutamyl-L-cysteinyl-glycine, GSH) using boron doped diamond (BDD) microelectrode for potential application in the assessment of cancerous tumors is presented. Accurate calibration curve for the determination of GSH could be obtained by the in vitro electrochemical measurements. Additionally, it was shown that it was possible to separate the detection of GSH from the oxidized form of glutathione (GSSG) using chronoamperometry measurements. In vivo GSH detection measurements have been performed in human cancer cells inoculated in immunodeficient mice. These measurements have shown that the difference of GSH level between cancerous and normal tissues can be detected. Moreover, GSH detection measurements carried out before and after X-ray irradiation have proved that it is possible to assess in vivo the decrease in GSH concentration in the tumor after a specific treatment.

  2. Boron doped graphene wrapped silver nanowires as an efficient electrocatalyst for molecular oxygen reduction

    PubMed Central

    Nair, Anju K.; Thazhe veettil, Vineesh; Kalarikkal, Nandakumar; Thomas, Sabu; Kala, M. S.; Sahajwalla, Veena; Joshi, Rakesh K.; Alwarappan, Subbiah

    2016-01-01

    Metal nanowires exhibit unusually high catalytic activity towards oxygen reduction reaction (ORR) due to their inherent electronic structures. However, controllable synthesis of stable nanowires still remains as a daunting challenge. Herein, we report the in situ synthesis of silver nanowires (AgNWs) over boron doped graphene sheets (BG) and demonstrated its efficient electrocatalytic activity towards ORR for the first time. The electrocatalytic ORR efficacy of BG-AgNW is studied using various voltammetric techniques. The BG wrapped AgNWs shows excellent ORR activity, with very high onset potential and current density and it followed four electron transfer mechanism with high methanol tolerance and stability towards ORR. The results are comparable to the commercially available 20% Pt/C in terms of performance. PMID:27941954

  3. Boron-Doped Nanocrystalline Diamond Electrodes for Neural Interfaces: In vivo Biocompatibility Evaluation

    PubMed Central

    Alcaide, María; Taylor, Andrew; Fjorback, Morten; Zachar, Vladimir; Pennisi, Cristian P.

    2016-01-01

    Boron-doped nanocrystalline diamond (BDD) electrodes have recently attracted attention as materials for neural electrodes due to their superior physical and electrochemical properties, however their biocompatibility remains largely unexplored. In this work, we aim to investigate the in vivo biocompatibility of BDD electrodes in relation to conventional titanium nitride (TiN) electrodes using a rat subcutaneous implantation model. High quality BDD films were synthesized on electrodes intended for use as an implantable neurostimulation device. After implantation for 2 and 4 weeks, tissue sections adjacent to the electrodes were obtained for histological analysis. Both types of implants were contained in a thin fibrous encapsulation layer, the thickness of which decreased with time. Although the level of neovascularization around the implants was similar, BDD electrodes elicited significantly thinner fibrous capsules and a milder inflammatory reaction at both time points. These results suggest that BDD films may constitute an appropriate material to support stable performance of implantable neural electrodes over time. PMID:27013949

  4. Boron-Doped Nanocrystalline Diamond Electrodes for Neural Interfaces: In vivo Biocompatibility Evaluation.

    PubMed

    Alcaide, María; Taylor, Andrew; Fjorback, Morten; Zachar, Vladimir; Pennisi, Cristian P

    2016-01-01

    Boron-doped nanocrystalline diamond (BDD) electrodes have recently attracted attention as materials for neural electrodes due to their superior physical and electrochemical properties, however their biocompatibility remains largely unexplored. In this work, we aim to investigate the in vivo biocompatibility of BDD electrodes in relation to conventional titanium nitride (TiN) electrodes using a rat subcutaneous implantation model. High quality BDD films were synthesized on electrodes intended for use as an implantable neurostimulation device. After implantation for 2 and 4 weeks, tissue sections adjacent to the electrodes were obtained for histological analysis. Both types of implants were contained in a thin fibrous encapsulation layer, the thickness of which decreased with time. Although the level of neovascularization around the implants was similar, BDD electrodes elicited significantly thinner fibrous capsules and a milder inflammatory reaction at both time points. These results suggest that BDD films may constitute an appropriate material to support stable performance of implantable neural electrodes over time.

  5. Highly air- and moisture-stable hole-doped carbon nanotube films achieved using boron-based oxidant

    NASA Astrophysics Data System (ADS)

    Funahashi, Kazuma; Tanaka, Naoki; Shoji, Yoshiaki; Imazu, Naoki; Nakayama, Ko; Kanahashi, Kaito; Shirae, Hiroyuki; Noda, Suguru; Ohta, Hiromichi; Fukushima, Takanori; Takenobu, Taishi

    2017-03-01

    Hole doping into carbon nanotubes can be achieved. However, the doped nanotubes usually suffer from the lack of air and moisture stability, thus, they eventually lose their improved electrical properties. Here, we report that a salt of the two-coordinate boron cation Mes2B+ (Mes: 2,4,6-trimethylphenyl group) can serve as an efficient hole-doping reagent to produce nanotubes with markedly high stability in the presence of air and moisture. Upon doping, the resistances of the nanotubes decreased, and these states were maintained for one month in air. The hole-doped nanotube films showed a minimal increase in resistance even upon humidification with a relative humidity of 90%.

  6. Friction and wear performance of boron doped, undoped microcrystalline and fine grained composite diamond films

    NASA Astrophysics Data System (ADS)

    Wang, Xinchang; Wang, Liang; Shen, Bin; Sun, Fanghong

    2015-01-01

    Chemical vapor deposition (CVD) diamond films have attracted more attentions due to their excellent mechanical properties. Whereas as-fabricated traditional diamond films in the previous studies don't have enough adhesion or surface smoothness, which seriously impact their friction and wear performance, and thus limit their applications under extremely harsh conditions. A boron doped, undoped microcrystalline and fine grained composite diamond (BD-UM-FGCD) film is fabricated by a three-step method adopting hot filament CVD (HFCVD) method in the present study, presenting outstanding comprehensive performance, including the good adhesion between the substrate and the underlying boron doped diamond (BDD) layer, the extremely high hardness of the middle undoped microcrystalline diamond (UMCD) layer, as well as the low surface roughness and favorable polished convenience of the surface fine grained diamond (FGD) layer. The friction and wear behavior of this composite film sliding against low-carbon steel and silicon nitride balls are studied on a ball-on-plate rotational friction tester. Besides, its wear rate is further evaluated under a severer condition using an inner-hole polishing apparatus, with low-carbon steel wire as the counterpart. The test results show that the BD-UM-FGCD film performs very small friction coefficient and great friction behavior owing to its high surface smoothness, and meanwhile it also has excellent wear resistance because of the relatively high hardness of the surface FGD film and the extremely high hardness of the middle UMCD film. Moreover, under the industrial conditions for producing low-carbon steel wires, this composite film can sufficiently prolong the working lifetime of the drawing dies and improve their application effects. This research develops a novel composite diamond films owning great comprehensive properties, which have great potentials as protecting coatings on working surfaces of the wear-resistant and anti

  7. Batch fabrication of mesoporous boron-doped nickel oxide nanoflowers for electrochemical capacitors

    SciTech Connect

    Yang, Jing-He; Yu, Qingtao; Li, Yamin; Mao, Liqun; Ma, Ding

    2014-11-15

    Highlights: • A new facile liquid-phase method has been employed for synthesis boron-doped NiO nanoflowers. • The specific surface area of NiO is as high as 200 m{sup 2} g{sup −1}. • NiO nanoflowers exhibit a high specific capacitance of ∼1309 F g{sup −1} at a charge and discharge current density of 3 A g{sup −1}. • NiO nanoflowers have excellent cycling ability and even after 2500 cycles there is no significant reduction in specific capacitance. - Abstract: Boron-doped nickel oxide (B-NiO) nanoflowers are prepared by simple thermal decomposition of nickel hydroxide. B-NiO is porous sphere with a diameter of about 400 nm. B-NiO nanoflowers are composed of approximately 30 nm nanoplates and the thickness of the nanosheets is approximately 3 nm. The specific surface area of the material is as high as 200 m{sup 2} g{sup −1} and the pore size distribution curves of B-NiO has three typical peaks in the range of mesoporous (5 nm, 13 nm and 18 nm). As an electrode for supercapacitors, the crystalline B-NiO nanoflowers have favorable characteristics, for instance, a specific capacitance of 1309 F g{sup −1} at a current density of 3 A g{sup −1} and no significant reduction in Coulombic efficiency after 2500 cycles at 37.5 A g{sup −1}. This remarkable electrochemical performance will make B-NiO nanoflowers a promising electrode material for high performance supercapacitors.

  8. Synergistic effect on the visible light activity of Ti3+ doped TiO2 nanorods/boron doped graphene composite

    PubMed Central

    Xing, Mingyang; Li, Xiao; Zhang, Jinlong

    2014-01-01

    TiO2/graphene (TiO2-x/GR) composites, which are Ti3+ self-doped TiO2 nanorods decorated on boron doped graphene sheets, were synthesized via a simple one-step hydrothermal method using low-cost NaBH4 as both a reducing agent and a boron dopant on graphene. The resulting TiO2 nanorods were about 200 nm in length with exposed (100) and (010) facets. The samples were characterized by X-ray diffraction (XRD), UV-visible diffuse reflectance spectroscopy, X-band electron paramagnetic resonance (EPR), X-ray photoelectron spectra (XPS), transmission electron microscope (TEM), Raman, and Fourier-transform infrared spectroscopy (FTIR). The XRD results suggest that the prepared samples have an anatase crystalline structure. All of the composites tested exhibited improved photocatalytic activities as measured by the degradation of methylene blue and phenol under visible light irradiation. This improvement was attributed to the synergistic effect of Ti3+ self-doping on TiO2 nanorods and boron doping on graphene. PMID:24974890

  9. Synergistic effect on the visible light activity of Ti3+ doped TiO2 nanorods/boron doped graphene composite.

    PubMed

    Xing, Mingyang; Li, Xiao; Zhang, Jinlong

    2014-06-30

    TiO2/graphene (TiO2-x/GR) composites, which are Ti(3+) self-doped TiO2 nanorods decorated on boron doped graphene sheets, were synthesized via a simple one-step hydrothermal method using low-cost NaBH4 as both a reducing agent and a boron dopant on graphene. The resulting TiO2 nanorods were about 200 nm in length with exposed (100) and (010) facets. The samples were characterized by X-ray diffraction (XRD), UV-visible diffuse reflectance spectroscopy, X-band electron paramagnetic resonance (EPR), X-ray photoelectron spectra (XPS), transmission electron microscope (TEM), Raman, and Fourier-transform infrared spectroscopy (FTIR). The XRD results suggest that the prepared samples have an anatase crystalline structure. All of the composites tested exhibited improved photocatalytic activities as measured by the degradation of methylene blue and phenol under visible light irradiation. This improvement was attributed to the synergistic effect of Ti(3+) self-doping on TiO2 nanorods and boron doping on graphene.

  10. Resistance to protein adsorption and adhesion of fibroblasts on nanocrystalline diamond films: the role of topography and boron doping.

    PubMed

    Alcaide, María; Papaioannou, Stavros; Taylor, Andrew; Fekete, Ladislav; Gurevich, Leonid; Zachar, Vladimir; Pennisi, Cristian Pablo

    2016-05-01

    Boron-doped nanocrystalline diamond (BNCD) films exhibit outstanding electrochemical properties that make them very attractive for the fabrication of electrodes for novel neural interfaces and prosthetics. In these devices, the physicochemical properties of the electrode materials are critical to ensure an efficient long-term performance. The aim of this study was to investigate the relative contribution of topography and doping to the biological performance of BNCD films. For this purpose, undoped and boron-doped NCD films were deposited on low roughness (LR) and high roughness (HR) substrates, which were studied in vitro by means of protein adsorption and fibroblast growth assays. Our results show that BNCD films significantly reduce the adsorption of serum proteins, mostly on the LR substrates. As compared to fibroblasts cultured on LR BNCD films, cells grown on the HR BNCD films showed significantly reduced adhesion and lower growth rates. The mean length of fibronectin fibrils deposited by the cells was significantly increased in the BNCD coated substrates, mainly in the LR surfaces. Overall, the largest influence on protein adsorption, cell adhesion, proliferation, and fibronectin deposition was due to the underlying sub-micron topography, with little or no influence of boron doping. In perspective, BNCD films displaying surface roughness in the submicron range may be used as a strategy to reduce the fibroblast growth on the surface of neural electrodes.

  11. Electronic properties and dopant pairing behavior of manganese in boron-doped silicon

    NASA Astrophysics Data System (ADS)

    Roth, T.; Rosenits, P.; Diez, S.; Glunz, S. W.; Macdonald, D.; Beljakowa, S.; Pensl, G.

    2007-11-01

    Boron-doped silicon wafers implanted with low doses of manganese have been analyzed by means of deep-level transient spectroscopy (DLTS), injection-dependent lifetime spectroscopy, and temperature-dependent lifetime spectroscopy. While DLTS measurements allow the defect levels and majority carrier capture cross sections to be determined, the lifetime spectroscopy techniques allow analysis of the dominant recombination levels and the corresponding ratios of the capture cross sections. Interstitial manganese and manganese-boron pairs were found to coexist, and their defect parameters have been investigated. In good agreement with the literature, this study identifies the defect level of manganese-boron pairs to be located in the lower half of the band gap at an energy level of Ev+0.55 eV with a majority carrier capture cross section of σp=3.5×10-13 cm2. The capture cross-section ratio was found to be k=σn/σp=6.0. This implies that the previously unknown minority carrier capture cross section is σn=2.1×1012 cm2. Concerning the defect related to interstitial manganese, this study identifies the most recombination-active level to be located in the upper half of the band gap at EC-0.45 eV with a corresponding ratio of the capture cross sections of k =9.4. In addition, the temperature-dependent association time constant of manganese-boron pairs is determined to be τassoc,Mn=8.3×105 K-1 cm-3(T /Ndop)exp(0.67 eV/kBT) and found to differ from that for iron by a factor of 3 at room temperature, allowing this association time constant to be used as a fingerprint for a possible contamination with manganese. Also, the diffusion coefficient of interstitial manganese in silicon is determined from these experiments in a temperature range from 70 to 120 °C. It can be represented by the expression DMn=6.9×10-4 cm2 s-1 exp(-0.67 eV/kBT).

  12. Boron-Filled Hybrid Carbon Nanotubes.

    PubMed

    Patel, Rajen B; Chou, Tsengming; Kanwal, Alokik; Apigo, David J; Lefebvre, Joseph; Owens, Frank; Iqbal, Zafar

    2016-07-27

    A unique nanoheterostructure, a boron-filled hybrid carbon nanotube (BHCNT), has been synthesized using a one-step chemical vapor deposition process. The BHCNTs can be considered to be a novel form of boron carbide consisting of boron doped, distorted multiwalled carbon nanotubes (MWCNTs) encapsulating boron nanowires. These MWCNTs were found to be insulating in spite of their graphitic layered outer structures. While conventional MWCNTs have great axial strength, they have weak radial compressive strength, and do not bond well to one another or to other materials. In contrast, BHCNTs are shown to be up to 31% stiffer and 233% stronger than conventional MWCNTs in radial compression and have excellent mechanical properties at elevated temperatures. The corrugated surface of BHCNTs enables them to bond easily to themselves and other materials, in contrast to carbon nanotubes (CNTs). BHCNTs can, therefore, be used to make nanocomposites, nanopaper sheets, and bundles that are stronger than those made with CNTs.

  13. Boron-Filled Hybrid Carbon Nanotubes

    PubMed Central

    Patel, Rajen B.; Chou, Tsengming; Kanwal, Alokik; Apigo, David J.; Lefebvre, Joseph; Owens, Frank; Iqbal, Zafar

    2016-01-01

    A unique nanoheterostructure, a boron-filled hybrid carbon nanotube (BHCNT), has been synthesized using a one-step chemical vapor deposition process. The BHCNTs can be considered to be a novel form of boron carbide consisting of boron doped, distorted multiwalled carbon nanotubes (MWCNTs) encapsulating boron nanowires. These MWCNTs were found to be insulating in spite of their graphitic layered outer structures. While conventional MWCNTs have great axial strength, they have weak radial compressive strength, and do not bond well to one another or to other materials. In contrast, BHCNTs are shown to be up to 31% stiffer and 233% stronger than conventional MWCNTs in radial compression and have excellent mechanical properties at elevated temperatures. The corrugated surface of BHCNTs enables them to bond easily to themselves and other materials, in contrast to carbon nanotubes (CNTs). BHCNTs can, therefore, be used to make nanocomposites, nanopaper sheets, and bundles that are stronger than those made with CNTs. PMID:27460526

  14. Boron doped g-C3N4 with enhanced photocatalytic UO22+ reduction performance

    NASA Astrophysics Data System (ADS)

    Lu, Changhai; Chen, Rongyue; Wu, Xi; Fan, Meifeng; Liu, Yunhai; Le, Zhanggao; Jiang, Shujuan; Song, Shaoqing

    2016-01-01

    Tuning the band gap and absorption intensity of visible-light by element doping is an attractive strategy to enhance the photocatalytic activity of semiconductor materials. Here we doped boron into g-C3N4 to construct highly efficient photocatalysts (B-g-C3N4) for the photocatalytic reduction of UO22+. Characterization and photocatalysis tests showed the band gap of B-g-C3N4 was narrowed, and the absorption intensity of visible-light was enhanced with increasing the formed N-B-C (BCN) of B-g-C3N4, which is consistent with the trend of the photocatalytic performance of B-g-C3N4. The optimized B-g-C3N4 photocatalyst with BCN content of 1.01 at.% exhibited excellent removal efficiency of UO22+ and good photocatalytic stability. Therefore, these results may lead to a new strategy for exploring the advanced photocatalysts based on the carbon nanomaterials with abundant BCN for the photocatalytic reduction of U(VI) pollutant.

  15. Homoepitaxial Boron Doped Diamond Anvils as Heating Elements in a Diamond Anvil Cell

    NASA Astrophysics Data System (ADS)

    Montgomery, Jeffrey; Samudrala, Gopi; Smith, Spencer; Tsoi, Georgiy; Vohra, Yogesh; Weir, Samuel

    2013-03-01

    Recent advances in designer-diamond technology have allowed for the use of electrically and thermally conducting homoepitaxially-grown layers of boron-doped diamond (grown at 1200 °C with a 2% mixture of CH4 in H, resulting in extremely high doping levels ~ 1020/cm3) to be used as heating elements in a diamond anvil cell (DAC). These diamonds allow for precise control of the temperature inside of the diamond anvil itself, particularly when coupled with a cryostat. Furthermore, the unmatched thermally conducting nature of diamond ensures that no significant lateral gradient in temperature occurs across the culet area. Since a thermocouple can easily be attached anywhere on the diamond surface, we can also measure diamond temperatures directly. With two such heaters, one can raise sample temperatures uniformly, or with any desired gradient along the pressure axis while preserving optical access. In our continuing set of benchmark experiments, we use two newly created matching heater anvils with 500 μm culets to analyze the various fluorescence emission lines of ruby microspheres, which show more complicated behavior than traditional ruby chips. We also report on the temperature dependence of the high-pressure Raman modes of paracetamol (C8H9NO2) up to 20 GPa.

  16. Dibenzothiophene adsorption at boron doped carbon nanoribbons studied within density functional theory

    NASA Astrophysics Data System (ADS)

    López-Albarrán, P.; Navarro-Santos, P.; Garcia-Ramirez, M. A.; Ricardo-Chávez, J. L.

    2015-06-01

    The adsorption of dibenzothiophene (DBT) on bare and boron-doped armchair carbon nanoribbons (ACNRs) is being investigated in the framework of the density functional theory by implementing periodic boundary conditions that include corrections from dispersion interactions. The reactivity of the ACNRs is characterized by using the Fukui functions as well as the electrostatic potential as local descriptors. Non-covalent adsorption mechanism is found when using the local Perdew-Becke-Ernzerhof functional, regardless of the DBT orientation and adsorption location. The dispersion interactions addition is a milestone to describe the adsorption process. The charge defects introduced in small number (i.e., by doping with B atoms), within the ACNRs increases the selectivity towards sulfur mainly due to the charge depletion at B sites. The DBT magnitude in the adsorption energy shows non-covalent interactions. As a consequence, the configurations where the DBT is adsorbed on a BC3 island increase the adsorption energy compared to random B arrangements. The stability of these configurations can be explained satisfactorily in terms of dipole interactions. Nevertheless, from the charge-density difference analysis and the weak Bader charge-distribution interactions cannot be ruled out completely. This is why the electronic properties of the ribbons are analyzed in order to elucidate the key role played by the B and DBT states in the adsorbed configurations.

  17. Self- and dopant diffusion in extrinsic boron doped isotopically controlled silicon multilayer structures

    SciTech Connect

    Sharp, Ian D.; Bracht, Hartmut A.; Silvestri, Hughes H.; Nicols, Samuel P.; Beeman, Jeffrey W.; Hansen, John L.; Nylandsted Larsen, Arne; Haller, Eugene E.

    2002-04-01

    Isotopically controlled silicon multilayer structures were used to measure the enhancement of self- and dopant diffusion in extrinsic boron doped silicon. {sup 30}Si was used as a tracer through a multilayer structure of alternating natural Si and enriched {sup 28}Si layers. Low energy, high resolution secondary ion mass spectrometry (SIMS) allowed for simultaneous measurement of self- and dopant diffusion profiles of samples annealed at temperatures between 850 C and 1100 C. A specially designed ion- implanted amorphous Si surface layer was used as a dopant source to suppress excess defects in the multilayer structure, thereby eliminating transient enhanced diffusion (TED) behavior. Self- and dopant diffusion coefficients, diffusion mechanisms, and native defect charge states were determined from computer-aided modeling, based on differential equations describing the diffusion processes. We present a quantitative description of B diffusion enhanced self-diffusion in silicon and conclude that the diffusion of both B and Si is mainly mediated by neutral and singly positively charged self-interstitials under p-type doping. No significant contribution of vacancies to either B or Si diffusion is observed.

  18. Dibenzothiophene adsorption at boron doped carbon nanoribbons studied within density functional theory

    SciTech Connect

    López-Albarrán, P.; Navarro-Santos, P.; Garcia-Ramirez, M. A.; Ricardo-Chávez, J. L.

    2015-06-21

    The adsorption of dibenzothiophene (DBT) on bare and boron-doped armchair carbon nanoribbons (ACNRs) is being investigated in the framework of the density functional theory by implementing periodic boundary conditions that include corrections from dispersion interactions. The reactivity of the ACNRs is characterized by using the Fukui functions as well as the electrostatic potential as local descriptors. Non-covalent adsorption mechanism is found when using the local Perdew-Becke-Ernzerhof functional, regardless of the DBT orientation and adsorption location. The dispersion interactions addition is a milestone to describe the adsorption process. The charge defects introduced in small number (i.e., by doping with B atoms), within the ACNRs increases the selectivity towards sulfur mainly due to the charge depletion at B sites. The DBT magnitude in the adsorption energy shows non-covalent interactions. As a consequence, the configurations where the DBT is adsorbed on a BC{sub 3} island increase the adsorption energy compared to random B arrangements. The stability of these configurations can be explained satisfactorily in terms of dipole interactions. Nevertheless, from the charge-density difference analysis and the weak Bader charge-distribution interactions cannot be ruled out completely. This is why the electronic properties of the ribbons are analyzed in order to elucidate the key role played by the B and DBT states in the adsorbed configurations.

  19. Doping, strain engineering, and interlayer interaction in bilayer hexagonal boron nitride sheets

    NASA Astrophysics Data System (ADS)

    Saito, Susumu; Fujimoto, Yoshitaka

    We study electronic properties of bilayer hexagonal boron nitride (h-BN) sheets with different stacking sequences in the framework of the density-functional theory. The bulk h-BN material usually takes the so-called AA (or AA') stacking, corresponding to the ''non-polar'' bilayer h-BN sheet. On the other hand, the rhombohedral BN takes the ABC stacking, and the corresponding bilayer sheet has ''upper'' and ''lower'' layers which are not equivalent with each other. Interestingly, the energetics of stacking sequences for bilayer h-BN sheets is found to be different from that for bulk h-BN materials. We report that strain engineering for bilayer h-BN sheets can possess much wider possibilities than that for monolayer h-BN due to the modification of the interlayer interaction. We also study the substitutional C doping into bilayer h-BN sheets, and report the energetics and the strain effect for these C-doped sheets. Finally we discuss the similarities and differences between bilayer h-BN sheets and double-wall h-BN nanotubes. This work was partly supported by the MEXT Elements Strategy Initiative to Form Core Research Center, Grant in Aid for Scientific Research, MEXT Japan, ``Science of Atomic Layers'', and JSPS KAKENHI Grant No. 26390062.

  20. CONDENSED MATTER: STRUCTURE, MECHANICAL AND THERMAL PROPERTIES: Adsorption Mechanism of Hydrogen on Boron-Doped Fullerenes

    NASA Astrophysics Data System (ADS)

    Yu, Liu-Min; Shi, Guo-Sheng; Wang, Zhi-Gang; Ji, Guang-Fu; Lu, Zhi-Peng

    2009-08-01

    The C35BH-H2 complex and two other possible isomers, C34BCaH-H2 and C34BCbH-H2, are investigated using the local-spin-density approximation (LSDA) method. The results indicate that a single hydrogen molecule could be strongly adsorbed on two isomers, C34BCaH and C34BCbH, with binding energies of 0.42 and 0.47 eV, respectively, and that these calculated binding energies are suitable for reversible hydrogen adsorption/desorption near room temperature. However, it is difficult for the H2 molecule to be firmly adsorbed on C35BH. We analyze the interaction between C34BCxH (x = a, b) and the H2 molecule using dipole moments and molecular orbitals. The charge analysis showed there was a partial charge (about 0.32e) transfer from H2 to the doped fullerenes. These calculation results should broaden our understanding of the mechanisms of hydrogen storage using boron-doped fullerenes.

  1. Fano interference of the Raman phonon in heavily boron-doped diamond films grown by chemical vapor deposition

    SciTech Connect

    Ager, J.W. III; Walukiewicz, W.; McCluskey, M. ); Plano, M.A.; Landstrass, M.I. )

    1995-01-30

    A series of boron-doped polycrystalline diamond films grown by direct current and microwave plasma deposition was studied with Raman and infrared (IR) absorption spectroscopy. A Fano line shape is observed in the Raman spectra for films with a boron concentration in a narrow range near 10[sup 21] cm[sup [minus]3]. The appearance of the Fano line shape is correlated with the disappearance of discrete electronic transitions of the boron acceptor observed in the IR spectrum and the shift of the broadened peak to lower energy. The Fano interaction is attributed to a quantum mechanical interference between the Raman phonon (0.165 eV) and transitions from the broadened impurity band to continuum states composed of excited acceptor and valence band states.

  2. Elemental boron-doped p(+)-SiGe layers grown by molecular beam epitaxy for infrared detector applications

    NASA Technical Reports Server (NTRS)

    Lin, T. L.; George, T.; Jones, E. W.; Ksendzov, A.; Huberman, M. L.

    1992-01-01

    SiGe/Si heterojunction internal photoemission (HIP) detectors have been fabricated utilizing molecular beam epitaxy of p(+)-SiGe layers on p(-)-Si substrates. Elemental boron from a high-temperature effusion cell was used as the dopant source during MBE growth, and high doping concentrations have been achieved. Strong infrared absorption, mainly by free-carrier absorption, was observed for the degenerately doped SiGe layers. The use of elemental boron as the dopant source allows a low MBE growth temperature, resulting in improved crystalline quality and smooth surface morphology of the Si(0.7)Ge(0.3) layers. Nearly ideal thermionic emission dark current characteristics have been obtained. Photoresponse of the HIP detectors in the long-wavelength infrared regime has been demonstrated.

  3. Solar cells on low-resistivity boron-doped Czochralski-grown silicon with stabilized efficiencies of 20%

    NASA Astrophysics Data System (ADS)

    Lim, Bianca; Hermann, Sonja; Bothe, Karsten; Schmidt, Jan; Brendel, Rolf

    2008-10-01

    Recently, it was shown that the boron-oxygen complex responsible for the light-induced lifetime degradation in oxygen-rich boron-doped silicon can be permanently deactivated by illumination at elevated temperatures. Since the degradation is particularly harmful in low-resistivity Czochralski silicon (Cz-Si), we apply the deactivation procedure to a high-efficiency rear interdigitated single evaporation emitter wrap-through solar cell made on 1.4Ωcm B-doped Cz-Si. The energy conversion efficiency is thereby increased by more than 1% absolute compared to the degraded state to 20.3% on a designated area of 92cm2 and is furthermore shown to be stable under illumination at room temperature.

  4. Enhanced photocatalytic performance of boron doped Bi₂WO₆ nanosheets under simulated solar light irradiation.

    PubMed

    Fu, Yu; Chang, Chun; Chen, Peng; Chu, Xiaolong; Zhu, Lingyan

    2013-06-15

    Bi₂WO6 doped with different amounts of boron atoms (0.1, 0.5, 1.0, 5.0 and 10% B) were synthesized using hydrothermal method and their photocatalytic activities to degrade rhodamine B (RhB) under simulated solar light was investigated. The successful incorporation of B atoms in Bi₂WO₆ was proved by FT-IR, Raman spectra and XPS. Doping with B could affect the pore structure and volume. 0.5% B/Bi₂WO₆ displayed more mesopores with higher total pore volume than pure Bi₂W₆; while the pores of 10% B/Bi₂WO₆ mainly distributed in microporous range with much less total pore volume. As a result, 0.5% B/Bi₂WO₆ displayed stronger adsorption capacity to RhB, favoring the photodegradation. In addition, the doped B atoms could act as electron traps and facilitate the separation of photogenerated electron-hole pairs due to its electron deficient and oxytropic characteristics. 0.5% B/Bi₂WO₆ displayed the highest photocatalytic activity under simulated solar light with rate constant (kobs) 8.8 times of that using pure Bi₂WO₆. Its photoactivity was affected by solution pH and the optimum was achieved at pH 7. At this condition, around 100% of RhB (10(-5)mol/L) was degraded in 180 min. The photogenerated holes were the main active species responsible for the photodegradation of RhB by B/Bi₂WO₆.

  5. A first principles study of pristine and Al-doped boron nitride nanotubes interacting with platinum-based anticancer drugs

    NASA Astrophysics Data System (ADS)

    Shakerzadeh, Ehsan; Noorizadeh, Siamak

    2014-03-01

    Interaction of cis-platin and neda-platin, two conventional platinum-based anticancer drugs, with pristine [8,8] and Al-doped [8,0] boron nitride nanotubes (BNNTs) are investigated using the density functional theory (DFT) method. The obtained results indicate that cis-platin and neda-platin weakly interact with pristine zig zag or armchair BNNTs with a little dependency on the adsorbing positions; while both cis-platin and neda-platin are preferentially adsorbed onto the Al atom of the Al-doped BNNT with considerable adsorption energies. Therefore the Al-doped-BNNT might be an efficient carrier for delivery of these drugs in nanomedicine domain. The electronic structures of the stable configurations are also investigated through both DOS and PDOS spectra. The obtained results introduce the Al-doped-BNNT as an efficient carrier for delivery of cis-platin and neda-platin in nanomedicine domain.

  6. Electrochemical evaluation and determination of antiretroviral drug fosamprenavir using boron-doped diamond and glassy carbon electrodes.

    PubMed

    Gumustas, Mehmet; Ozkan, Sibel A

    2010-05-01

    Fosamprenavir is a pro-drug of the antiretroviral protease inhibitor amprenavir and is oxidizable at solid electrodes. The anodic oxidation behavior of fosamprenavir was investigated using cyclic and linear sweep voltammetry at boron-doped diamond and glassy carbon electrodes. In cyclic voltammetry, depending on pH values, fosamprenavir showed one sharp irreversible oxidation peak or wave depending on the working electrode. The mechanism of the oxidation process was discussed. The voltammetric study of some model compounds allowed elucidation of the possible oxidation mechanism of fosamprenavir. The aim of this study was to determine fosamprenavir levels in pharmaceutical formulations and biological samples by means of electrochemical methods. Using the sharp oxidation response, two voltammetric methods were described for the determination of fosamprenavir by differential pulse and square-wave voltammetry at the boron-doped diamond and glassy carbon electrodes. These two voltammetric techniques are 0.1 M H(2)SO(4) and phosphate buffer at pH 2.0 which allow quantitation over a 4 x 10(-6) to 8 x 10(-5) M range using boron-doped diamond and a 1 x 10(-5) to 1 x 10(-4) M range using glassy carbon electrodes, respectively, in supporting electrolyte. All necessary validation parameters were investigated and calculated. These methods were successfully applied for the analysis of fosamprenavir pharmaceutical dosage forms, human serum and urine samples. The standard addition method was used in biological media using boron-doped diamond electrode. No electroactive interferences from the tablet excipients or endogenous substances from biological material were found. The results were statistically compared with those obtained through an established HPLC-UV technique; no significant differences were found between the voltammetric and HPLC methods.

  7. Feedback-amplified electrochemical dual-plate boron-doped diamond microtrench detector for flow injection analysis.

    PubMed

    Lewis, Grace E M; Gross, Andrew J; Kasprzyk-Hordern, Barbara; Lubben, Anneke T; Marken, Frank

    2015-08-01

    An electrochemical flow cell with a boron-doped diamond dual-plate microtrench electrode has been developed and demonstrated for hydroquinone flow injection electroanalysis in phosphate buffer pH 7. Using the electrochemical generator-collector feedback detector improves the sensitivity by one order of magnitude (when compared to a single working electrode detector). The diffusion process is switched from an analyte consuming "external" process to an analyte regenerating "internal" process with benefits in selectivity and sensitivity.

  8. Kinetics and mechanism of the deep electrochemical oxidation of sodium diclofenac on a boron-doped diamond electrode

    NASA Astrophysics Data System (ADS)

    Vedenyapina, M. D.; Borisova, D. A.; Rosenwinkel, K.-H.; Weichgrebe, D.; Stopp, P.; Vedenyapin, A. A.

    2013-08-01

    The kinetics and mechanism of the deep oxidation of sodium diclofenac on a boron-doped diamond electrode are studied to develop a technique for purifying wastewater from pharmaceutical products. The products of sodium diclofenac electrolysis are analyzed using cyclic voltammetry and nuclear magnetic resonance techniques. It is shown that the toxicity of the drug and products of its electrolysis decreases upon its deep oxidation.

  9. Cathodic reductive coupling of methyl cinnamate on boron-doped diamond electrodes and synthesis of new neolignan-type products

    PubMed Central

    Kojima, Taiki; Obata, Rika; Saito, Tsuyoshi

    2015-01-01

    Summary The electroreduction reaction of methyl cinnamate on a boron-doped diamond (BDD) electrode was investigated. The hydrodimer, dimethyl 3,4-diphenylhexanedioate (racemate/meso = 74:26), was obtained in 85% yield as the major product, along with small amounts of cyclic methyl 5-oxo-2,3-diphenylcyclopentane-1-carboxylate. Two new neolignan-type products were synthesized from the hydrodimer. PMID:25815070

  10. Lead detection using micro/nanocrystalline boron-doped diamond by square-wave anodic stripping voltammetry.

    PubMed

    Arantes, Tatiane M; Sardinha, André; Baldan, Mauricio R; Cristovan, Fernando H; Ferreira, Neidenei G

    2014-10-01

    Monitoring heavy metal ion levels in water is essential for human health and safety. Electroanalytical techniques have presented important features to detect toxic trace heavy metals in the environment due to their high sensitivity associated with their easy operational procedures. Square-wave voltammetry is a powerful electrochemical technique that may be applied to both electrokinetic and analytical measurements, and the analysis of the characteristic parameters of this technique also enables the mechanism and kinetic evaluation of the electrochemical process under study. In this work, we present a complete optimized study on the heavy metal detection using diamond electrodes. It was analyzed the influence of the morphology characteristics as well as the doping level on micro/nanocrystalline boron-doped diamond films by means of square-wave anodic stripping voltammetry (SWASV) technique. The SWASV parameters were optimized for all films, considering that their kinetic response is dependent on the morphology and/or doping level. The films presented reversible results for the Lead [Pb (II)] system studied. The Pb (II) analysis was performed in ammonium acetate buffer at pH 4.5, varying the lead concentration in the range from 1 to 10 μg L(-1). The analytical responses were obtained for the four electrodes. However, the best low limit detection and reproducibility was found for boron doped nanocrystalline diamond electrodes (BDND) doped with 2000 mg L(-1) in B/C ratio.

  11. Removal of azo dye by a highly graphitized and heteroatom doped carbon derived from fish waste: Adsorption equilibrium and kinetics.

    PubMed

    Liu, Zhengang; Zhang, Fang; Liu, Tingting; Peng, Nana; Gai, Chao

    2016-11-01

    A highly graphitized and heteroatom doped porous carbon was prepared from fish waste in the present study. The morphology and chemical composition of the resultant porous carbon were characterized by SEM-EDS, TEM, BET, XRD and Raman measurement. The prepared porous carbon was employed as an adsorbent for acid orange 7, a typical azo dye, removal from aqueous solution. The results showed that the porous carbon had ultrahigh surface area of 2146 m(2)/g, a high degree of graphitization structure and naturally doped with nitrogen and phosphorous. The maximum adsorption capacity of acid orange 7 reached 285.71 mg/g due to unique property of the prepared porous carbon. In addition, acid orange 7 adsorption onto the porous carbon well followed pseudo-second-order kinetics model and acid orange 7 diffusion in micropores was the potential rate controlling step.

  12. Improvements in the Formation of Boron-Doped Diamond Coatings on Platinum Wires Using the Novel Nucleation Process (NNP)

    PubMed Central

    Fhaner, Mathew; Zhao, Hong; Bian, Xiaochun; Galligan, James J.; Swain, Greg M.

    2010-01-01

    In order to increase the initial nucleation density for the growth of boron-doped diamond on platinum wires, we employed the novel nucleation process (NNP) originally developed by Rotter et al. and discussed by others [1–3]. This pretreatment method involves (i) the initial formation of a thin carbon layer over the substrate followed by (ii) ultrasonic seeding of this “soft” carbon layer with nanoscale particles of diamond. This two-step pretreatment is followed by the deposition of boron-doped diamond by microwave plasma-assisted CVD. Both the diamond seed particles and sites on the carbon layer itself function as the initial nucleation zones for diamond growth from an H2-rich source gas mixture. We report herein on the characterization of the pre-growth carbon layer formed on Pt as well as boron-doped films grown for 2, 4 and 6 h post NNP pretreatment. Results from scanning electron microscopy, Raman spectroscopy and electrochemical studies are reported. The NNP method increases the initial nucleation density on Pt and leads to the formation of a continuous diamond film in a shorter deposition time than is typical for wires pretreated by conventional ultrasonic seeding. The results indicate that the pregrowth layer itself consists of nanoscopic domains of diamond and functions well to enhance the initial nucleation of diamond without any diamond powder seeding. PMID:21617759

  13. Electroanalytical investigation and determination of pefloxacin in pharmaceuticals and serum at boron-doped diamond and glassy carbon electrodes.

    PubMed

    Uslu, Bengi; Topal, Burcu Dogan; Ozkan, Sibel A

    2008-02-15

    The anodic behavior and determination of pefloxacin on boron-doped diamond and glassy carbon electrodes were investigated using cyclic, linear sweep, differential pulse and square wave voltammetric techniques. In cyclic voltammetry, pefloxacin shows one main irreversible oxidation peak and additional one irreversible ill-defined wave depending on pH values for both electrodes. The results indicate that the process of pefloxacin is irreversible and diffusion controlled on boron-doped diamond electrode and irreversible but adsorption controlled on glassy carbon electrode. The peak current is found to be linear over the range of concentration 2x10(-6) to 2x10(-4)M in 0.5M H(2)SO(4) at about +1.20V (versus Ag/AgCl) for differential pulse and square wave voltammetric technique using boron-doped diamond electrode. The repeatability, reproducibility, precision and accuracy of the methods in all media were investigated. Selectivity, precision and accuracy of the developed methods were also checked by recovery studies. The procedures were successfully applied to the determination of the drug in pharmaceutical dosage forms and humans serum samples with good recovery results. No electroactive interferences from the excipients and endogenous substances were found in the pharmaceutical dosage forms and biological samples, respectively.

  14. Optical and electrical properties of boron doped diamond thin conductive films deposited on fused silica glass substrates

    NASA Astrophysics Data System (ADS)

    Ficek, M.; Sobaszek, M.; Gnyba, M.; Ryl, J.; Gołuński, Ł.; Smietana, M.; Jasiński, J.; Caban, P.; Bogdanowicz, R.

    2016-11-01

    This paper presents boron-doped diamond (BDD) film as a conductive coating for optical and electronic purposes. Seeding and growth processes of thin diamond films on fused silica have been investigated. Growth processes of thin diamond films on fused silica were investigated at various boron doping level and methane admixture. Two step pre-treatment procedure of fused silica substrate was applied to achieve high seeding density. First, the substrates undergo the hydrogen plasma treatment then spin-coating seeding using a dispersion consisting of detonation nanodiamond in dimethyl sulfoxide with polyvinyl alcohol was applied. Such an approach results in seeding density of 2 × 1010 cm-2. The scanning electron microscopy images showed homogenous, continuous and polycrystalline surface morphology with minimal grain size of 200 nm for highly boron doped films. The sp3/sp2 ratio was calculated using Raman spectra deconvolution method. A high refractive index (range of 2.0-2.4 @550 nm) was achieved for BDD films deposited at 500 °C. The values of extinction coefficient were below 0.1 at λ = 550 nm, indicating low absorption of the film. The fabricated BDD thin films displayed resistivity below 48 Ohm cm and transmittance over 60% in the visible wavelength range.

  15. In vivo biocompatibility of boron doped and nitrogen included conductive-diamond for use in medical implants.

    PubMed

    Garrett, David J; Saunders, Alexia L; McGowan, Ceara; Specks, Joscha; Ganesan, Kumaravelu; Meffin, Hamish; Williams, Richard A; Nayagam, David A X

    2016-01-01

    Recently, there has been interest in investigating diamond as a material for use in biomedical implants. Diamond can be rendered electrically conducting by doping with boron or nitrogen. This has led to inclusion of boron doped and nitrogen included diamond elements as electrodes and/or feedthroughs for medical implants. As these conductive device elements are not encapsulated, there is a need to establish their clinical safety for use in implants. This article compares the biocompatibility of electrically conducting boron doped diamond (BDD) and nitrogen included diamond films and electrically insulating poly crystalline diamond films against a silicone negative control and a BDD sample treated with stannous octoate as a positive control. Samples were surgically implanted into the back muscle of a guinea pig for a period of 4-15 weeks, excised and the implant site sectioned and submitted for histological analysis. All forms of diamond exhibited a similar or lower thickness of fibrotic tissue encapsulating compared to the silicone negative control samples. All forms of diamond exhibited similar or lower levels of acute, chronic inflammatory, and foreign body responses compared to the silicone negative control indicating that the materials are well tolerated in vivo.

  16. Elaboration and characterization of boron doping during SiC growth by VLS mechanism

    NASA Astrophysics Data System (ADS)

    Soueidan, Maher; Ferro, Gabriel; Nsouli, Bilal; Roumié, Mohamad; Habka, Nada; Souliere, Véronique; Bluet, Jean-Marie; Kazan, Michel

    2011-07-01

    VLS mechanism was used for growing boron doped homoepitaxial SiC layers on 4H-SiC(0 0 0 1) 8° off substrate. Si-based melts were fed by propane in the temperature range 1450-1500 °C. Two main approaches were studied to incorporate boron during growth: (1) adding elemental B in the initial melt, with two different compositions: Si 90B 10 and Si 27Ge 68B 5; the growth was performed at 1500 °C; (2) adding B 2H 6 to the gas phase during growth with a melt composition of Si 25Ge 75; the growth was performed at 1450 °C. In most cases, the growth time was limited by liquid loss. The longest growth duration (1 h) was obtained when adding B 2H 6 to the gas phase. In the case of Si 90B 10 melt, the surface morphology exhibits large and parallel terraces whereas the step front is more undulated when adding Ge. Raman and photoluminescence characterizations performed on these layers confirmed the 4H polytype of the layers in addition to the presence of B, which results in a strong B-N donor-acceptor band. The thickness and the growth rate were determined by micro-Infrared spectroscopy. Particle Induced γ-ray Emission (PIGE) was tentatively used to detect B incorporation inside the grown layers. These results were compared to SIMS measurements from which B concentration was found to vary from 10 18 to 10 19 at cm -3.

  17. Performance of Graphite Pastes Doped with Various Materials as Back Contact for CdS/CdTe Solar Cell

    NASA Astrophysics Data System (ADS)

    Hanafusa, Akira; Aramoto, Tetsuya; Morita, Akikatsu

    2001-12-01

    To date the problem of developing a suitable back contact for CdS/CdTe solar cells has yet to be resolved. The Cu-doped graphite paste that is widely used as a back contact is associated with degradation problems due to possible Cu diffusion across the CdS/CdTe junction. This study was designed to find ways to improve the graphite paste for superior electrical contacts. Mixtures of graphite paste with various material constituents and dopants consisting of silver-, lead-, nickel-, antimony-, bismuth-, or phosphor-based compounds, were studied. Results show that the performances of solar cells fabricated from these graphite pastes vary with the change in the composition. In the cases of Ag2Te and Ni2P, we studied their relationship with the solar cell characteristics with regard to dopant quantity, and furthermore in the case of Ag2Te, with regard to the sintering temperature of the graphite electrode. A fill factor (F.F.) of over 0.65 and efficiencies over 13% were obtained with Ag2Te, Ag3PO4, Ag2MoO4, and NiTe, and efficiencies over 12% were obtained with AgF, AgCl, Ni2P, and Ni3P.

  18. Highly graphitized nitrogen-doped porous carbon nanopolyhedra derived from ZIF-8 nanocrystals as efficient electrocatalysts for oxygen reduction reactions

    NASA Astrophysics Data System (ADS)

    Zhang, Linjie; Su, Zixue; Jiang, Feilong; Yang, Lingling; Qian, Jinjie; Zhou, Youfu; Li, Wenmu; Hong, Maochun

    2014-05-01

    Nitrogen-doped graphitic porous carbons (NGPCs) have been synthesized by using a zeolite-type nanoscale metal-organic framework (NMOF) as a self-sacrificing template, which simultaneously acts as both the carbon and nitrogen sources in a facile carbonization process. The NGPCs not only retain the nanopolyhedral morphology of the parent NMOF, but also possess rich nitrogen, high surface area and hierarchical porosity with well-conducting networks. The promising potential of NGPCs as metal-free electrocatalysts for oxygen reduction reactions (ORR) in fuel cells is demonstrated. Compared with commercial Pt/C, the optimized NGPC-1000-10 (carbonized at 1000 °C for 10 h) catalyst exhibits comparable electrocatalytic activity via an efficient four-electron-dominant ORR process coupled with superior methanol tolerance as well as cycling stability in alkaline media. Furthermore, the controlled experiments reveal that the optimum activity of NGPC-1000-10 can be attributed to the synergetic contributions of the abundant active sites with high graphitic-N portion, high surface area and porosity, and the high degree of graphitization. Our findings suggest that solely MOF-derived heteroatom-doped carbon materials can be a promising alternative for Pt-based catalysts in fuel cells.Nitrogen-doped graphitic porous carbons (NGPCs) have been synthesized by using a zeolite-type nanoscale metal-organic framework (NMOF) as a self-sacrificing template, which simultaneously acts as both the carbon and nitrogen sources in a facile carbonization process. The NGPCs not only retain the nanopolyhedral morphology of the parent NMOF, but also possess rich nitrogen, high surface area and hierarchical porosity with well-conducting networks. The promising potential of NGPCs as metal-free electrocatalysts for oxygen reduction reactions (ORR) in fuel cells is demonstrated. Compared with commercial Pt/C, the optimized NGPC-1000-10 (carbonized at 1000 °C for 10 h) catalyst exhibits comparable

  19. Boron doped nanostructure ZnO films deposited by ultrasonic spray pyrolysis

    NASA Astrophysics Data System (ADS)

    Karakaya, Seniye; Ozbas, Omer

    2015-02-01

    ZnO is an II-VI compound semiconductor with a wide direct band gap of 3.3 eV at room temperature. Doped with group III elements (B, Al or Ga), it becomes an attractive candidate to replace tin oxide (SnO2) or indium tin oxide (ITO) as transparent conducting electrodes in solar cell devices and flat panel display due to competitive electrical and optical properties. In this work, ZnO and boron doped ZnO (ZnO:B) films have been deposited onto glass substrates at 350 ± 5 °C by a cost-efficient ultrasonic spray pyrolysis technique. The optical, structural, morphological and electrical properties of nanostructure undoped and ZnO:B films have been investigated. Electrical resistivity of films has been analyzed by four-probe technique. Optical properties and thicknesses of the films have been examined in the wavelength range 1200-1600 nm by using spectroscopic ellipsometry (SE) measurements. The optical constants (refractive index (n) and extinction coefficient (k)) and the thicknesses of the films have been fitted according to Cauchy model. The optical method has been used to determine the band gap value of the films. Transmission spectra have been taken by UV spectrophotometer. It is found that both ZnO and ZnO:B films have high average optical transmission (≥80%). X-ray diffraction (XRD) patterns indicate that the obtained ZnO has a hexagonal wurtzite type structure. The morphological properties of the films were studied by atomic force microscopy (AFM). The surface morphology of the nanostructure films is found to depend on the concentration of B. As a result, ZnO:B films are promising contender for their potential use as transparent window layer and electrodes in solar cells.

  20. Tunable doping and band gap of graphene on functionalized hexagonal boron nitride with hydrogen and fluorine.

    PubMed

    Tang, Shaobin; Yu, Jianping; Liu, Liangxian

    2013-04-14

    First-principles calculations have been used to investigate the structural and electronic properties of graphene supported on functionalized hexagonal boron nitride (h-BN) with hydrogen and fluorine atoms. Our results show that the hydrogenation and fluorination of the h-BN substrate modify the electronic properties of graphene. Interactions of graphene with fully hydrogenated or fully fluorinated h-BN and half-hydrogenated and half-fluorinated h-BN with H at N sites and F at the B sites can lead to n- or p-type doping of graphene. The different doping effect may be attributed to the significant charge transfer from graphene to the substrate. Interestingly, when graphene is supported on the functionalized h-BN with H at B sites and F at N sites (G/HBNF), a finite band gap of 79 meV in graphene is opened due to the equivalence breaking of two sublattices of graphene, and can be effectively modulated by changing the interlayer spacing, increasing the number of functionalized BN layers, and applying an external electric field. More importantly, the modification of the band gap in G/HBNF with a functionalized BN bilayer by the electric field is more pronounced than that of the single-layer h-BN, which is increased to 408 meV with 0.8 V Å(-1). Thus, graphene on chemically modified h-BN with a tunable and sizeable band gap may provide a novel way for fabricating high-performance graphene-based nanodevices.

  1. Highly defective graphite for scalable synthesis of nitrogen doped holey graphene with high volumetric capacitance

    NASA Astrophysics Data System (ADS)

    Zhang, Yijie; Ji, Lei; Li, Wanfei; Zhang, Zhao; Lu, Luhua; Zhou, Lisha; Liu, Jinghai; Chen, Ying; Liu, Liwei; Chen, Wei; Zhang, Yuegang

    2016-12-01

    Manipulating basal plane structure of graphene for advanced energy conversion materials design has been research frontier in recent years. By extending size of defects in the basal plane of graphene from atomic scale to nanoscale, graphene with in-plane holes can be synthesized by multiple steps oxidation and reduction of defective graphene oxide at low concentration. These complicated and low yield synthetic methods largely limited research and applications of holey graphene based high performance energy conversion materials. Inspired by graphene in-plane holes formation mechanism, an easy and scalable synthetic approach has been proposed in this work. By oxidizing widely available defective graphite mineral under high concentration, holey graphene oxide has been scalable synthesized. Through simple reduction of holey graphene oxide, nitrogen doped holey graphene with high volumetric capacitance of 439 F/cm3 was obtained. We believe this breakthrough can provide a feasible synthetic approach for further exploring the properties and performance of holey graphene based materials in variety of fields.

  2. Graphitic Carbon Nitride Supported Catalysts for Polymer Electrolyte Fuel Cells.

    PubMed

    Mansor, Noramalina; Jorge, A Belen; Corà, Furio; Gibbs, Christopher; Jervis, Rhodri; McMillan, Paul F; Wang, Xiaochen; Brett, Daniel J L

    2014-04-03

    Graphitic carbon nitrides are investigated for developing highly durable Pt electrocatalyst supports for polymer electrolyte fuel cells (PEFCs). Three different graphitic carbon nitride materials were synthesized with the aim to address the effect of crystallinity, porosity, and composition on the catalyst support properties: polymeric carbon nitride (gCNM), poly(triazine) imide carbon nitride (PTI/Li(+)Cl(-)), and boron-doped graphitic carbon nitride (B-gCNM). Following accelerated corrosion testing, all graphitic carbon nitride materials are found to be more electrochemically stable compared to conventional carbon black (Vulcan XC-72R) with B-gCNM support showing the best stability. For the supported catalysts, Pt/PTI-Li(+)Cl(-) catalyst exhibits better durability with only 19% electrochemical surface area (ECSA) loss versus 36% for Pt/Vulcan after 2000 scans. Superior methanol oxidation activity is observed for all graphitic carbon nitride supported Pt catalysts on the basis of the catalyst ECSA.

  3. Graphitic Carbon Nitride Supported Catalysts for Polymer Electrolyte Fuel Cells

    PubMed Central

    2014-01-01

    Graphitic carbon nitrides are investigated for developing highly durable Pt electrocatalyst supports for polymer electrolyte fuel cells (PEFCs). Three different graphitic carbon nitride materials were synthesized with the aim to address the effect of crystallinity, porosity, and composition on the catalyst support properties: polymeric carbon nitride (gCNM), poly(triazine) imide carbon nitride (PTI/Li+Cl–), and boron-doped graphitic carbon nitride (B-gCNM). Following accelerated corrosion testing, all graphitic carbon nitride materials are found to be more electrochemically stable compared to conventional carbon black (Vulcan XC-72R) with B-gCNM support showing the best stability. For the supported catalysts, Pt/PTI-Li+Cl– catalyst exhibits better durability with only 19% electrochemical surface area (ECSA) loss versus 36% for Pt/Vulcan after 2000 scans. Superior methanol oxidation activity is observed for all graphitic carbon nitride supported Pt catalysts on the basis of the catalyst ECSA. PMID:24748912

  4. Thin layer of ordered boron-doped TiO2 nanotubes fabricated in a novel type of electrolyte and characterized by remarkably improved photoactivity

    NASA Astrophysics Data System (ADS)

    Siuzdak, Katarzyna; Szkoda, Mariusz; Lisowska-Oleksiak, Anna; Grochowska, Katarzyna; Karczewski, Jakub; Ryl, Jacek

    2015-12-01

    This paper reports a novel method of boron doped titania nanotube arrays preparation by electrochemical anodization in electrolyte containing boron precursor - boron trifluoride diethyl etherate (BF3 C4H10O), simultaneously acting as an anodizing agent. A pure, ordered TiO2 nanotubes array, as a reference sample, was also prepared in solution containing a standard etching compound: ammonium fluoride. The doped and pure titania were characterized by scanning electron microscopy, UV-vis spectroscopy, Raman spectroscopy, X-ray photoelectron spectroscopy, photoluminescence emission spectroscopy and by means of electrochemical methods. The B-doping decidedly shifts the absorption edge of TiO2 nanotubes towards the visible light region and significantly inhibits the radiative recombination processes. Despite the fact that the doped sample is characterized by 4.6 lower real surface area when compared to pure titania, it leads to the decomposition of methylene blue in 93%, that is over 2.3 times higher than the degradation efficiency exhibited by the undoped material. The formation rate of hydroxyl radicals (rad OH) upon illumination significantly favours boron doped titania as a photocatalytic material. Moreover, the simple doping of TiO2 nanotubes array results in the enhancement of generated photocurrent from 120 μA/cm2 to 350 μA/cm2 registered for undoped and doped electrode, respectively.

  5. Electrochemical treatment of cork boiling wastewater with a boron-doped diamond anode.

    PubMed

    Fernandes, Annabel; Santos, Diana; Pacheco, Maria José; Ciríaco, Lurdes; Simões, Rogério; Gomes, Arlindo C; Lopes, Ana

    2015-01-01

    Anodic oxidation at a boron-doped diamond anode of cork boiling wastewater was successfully used for mineralization and biodegradability enhancement required for effluent discharge or subsequent biological treatment, respectively. The influence of the applied current density (30-70 mA/cm2) and the background electrolyte concentration (0-1.5 g/L Na2SO4) on the performance of the electrochemical oxidation was investigated. The supporting electrolyte was required to achieve conductivities that enabled anodic oxidation at the highest current intensities applied. The results indicated that pollutant removal increased with the applied current density, and after 8 h, reductions greater than 90% were achieved for COD, dissolved organic carbon, total phenols and colour. The biodegradability enhancement was from 0.13 to 0.59 and from 0.23 to 0.72 for the BOD/COD ratios with BOD of 5 and 20 days' incubation period, respectively. The tests without added electrolyte were performed at lower applied electrical charges (15 mA/cm2 or 30 V) with good organic load removal (up to 80%). For an applied current density of 30 mA/cm2, there was a minimum of electric conductivity of 1.9 mS/cm (corresponding to 0.75 g/L of Na2SO4), which minimized the specific energy consumption.

  6. Adsorption properties of boroxol ring doped zigzag boron nitride nanotube toward NO molecule using DFT

    NASA Astrophysics Data System (ADS)

    Zahedi, Ehsan; Babaie, Mahsa; Bahmanpour, Hooman

    2016-05-01

    In previous researches it is demonstrated that reactivity and sensitivity of boron nitride nanotubes (BNNTs) toward gas molecules can be modified by impurity. In this work, oxygen defect for three nitrogen sites was used to study the adsorption of NO molecule through the surface of boroxol ring of oxygen doped BNNT (7,0) with different adsorption patterns, including side-on and end-on. All calculations are performed using the DFT-B3LYP/6-31G∗ level of theory, and their electronic energies are corrected by gCP and D3 correction terms. High binding energies indicate that NO molecule undergoes chemical adsorption with large charge transfer from the tube which can significantly change electronic properties of the tube. Density of state (DOS) and partial DOS (PDOS) analyses revealed that adsorption of NO molecule on the boroxol ring position is covalent in nature with significant effect on the electronic properties of tube. The Laplacian of electron density, Lagrangian kinetic energy density, Hamiltonian kinetic energy density and potential energy density at bond critical points between the tube and NO indicate that the interaction between the tube and NO molecule is covalent in nature. Topological analysis of the electron localization function shows that electrons in the new formed bonds are approximately localized, meaning that the nature of adsorption process is chemical covalent. The studied nanotube is a suitable candidate to filter and eliminate NO gas molecule.

  7. Electrochemical decolorization of dye wastewater by surface-activated boron-doped nanocrystalline diamond electrode.

    PubMed

    Chen, Chienhung; Nurhayati, Ervin; Juang, Yaju; Huang, Chihpin

    2016-07-01

    Complex organics contained in dye wastewater are difficult to degrade and often require electrochemical advanced oxidation processes (EAOPs) to treat it. Surface activation of the electrode used in such treatment is an important factor determining the success of the process. The performance of boron-doped nanocrystalline diamond (BD-NCD) film electrode for decolorization of Acid Yellow (AY-36) azo dye with respect to the surface activation by electrochemical polarization was studied. Anodic polarization found to be more suitable as electrode pretreatment compared to cathodic one. After anodic polarization, the originally H-terminated surface of BD-NCD was changed into O-terminated, making it more hydrophilic. Due to the oxidation of surface functional groups and some portion of sp(2) carbon in the BD-NCD film during anodic polarization, the electrode was successfully being activated showing lower background current, wider potential window and considerably less surface activity compared to the non-polarized one. Consequently, electrooxidation (EO) capability of the anodically-polarized BD-NCD to degrade AY-36 dye was significantly enhanced, capable of nearly total decolorization and chemical oxygen demand (COD) removal even after several times of re-using. The BD-NCD film electrode favored acidic condition for the dye degradation; and the presence of chloride ion in the solution was found to be more advantageous than sulfate active species.

  8. Continuous and selective measurement of oxytocin and vasopressin using boron-doped diamond electrodes

    NASA Astrophysics Data System (ADS)

    Asai, Kai; Ivandini, Tribidasari A.; Einaga, Yasuaki

    2016-09-01

    The electrochemical detection of oxytocin using boron-doped diamond (BDD) electrodes was studied. Cyclic voltammetry of oxytocin in a phosphate buffer solution exhibits an oxidation peak at +0.7 V (vs. Ag/AgCl), which is attributable to oxidation of the phenolic group in the tyrosyl moiety. Furthermore, the linearity of the current peaks obtained in flow injection analysis (FIA) using BDD microelectrodes over the oxytocin concentration range from 0.1 to 10.0 μM with a detection limit of 50 nM (S/N = 3) was high (R2 = 0.995). Although the voltammograms of oxytocin and vasopressin observed with an as-deposited BDD electrode, as well as with a cathodically-reduced BDD electrode, were similar, a clear distinction was observed with anodically-oxidized BDD electrodes due to the attractive interaction between vasopressin and the oxidized BDD surface. By means of this distinction, selective measurements using chronoamperometry combined with flow injection analysis at an optimized potential were demonstrated, indicating the possibility of making selective in situ or in vivo measurements of oxytocin.

  9. Boron and nitrogen co-doped porous carbon and its enhanced properties as supercapacitor

    NASA Astrophysics Data System (ADS)

    Guo, Hongliang; Gao, Qiuming

    Boron and nitrogen co-doped porous carbons (BNCs) were prepared through a facile procedure using citric acid, boric acid and nitrogen as C, B and N precursors, respectively. The BNC samples were characterized by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and nitrogen sorption at 77 K. Cyclic voltammetry and galvanostatic charge/discharge experiments were adopted to investigate their electrochemical behaviors. The BNC-9 and BNC-15 samples with high specific surface areas of 894 and 726 m 2 g -1 showed the large specific capacitance up to 268 and 173 F g -1, respectively, with the current of 0.1 A g -1. When the current was set as 1 A g -1, the energy densities were 3.8 and 3.0 Wh kg -1 and the power densities were 165 and 201 W kg -1 for BNC-9 and BNC-15, respectively. Thus, BNC-15 is more suitable to apply in high-power-demanded occasion, while BNC-9 tends to store more energy.

  10. Anodic voltammetry of zolmitriptan at boron-doped diamond electrode and its analytical applications.

    PubMed

    Uslu, B; Canbaz, D

    2010-04-01

    The electrooxidative behavior and determination of zolmitriptan at a boron-doped diamond electrode were investigated using cyclic, linear sweep, differential pulse and square wave voltammetric techniques. Zolmitriptan undergoes irreversible oxidation at a peak potential of about +0.9 V (vs Ag/AgCl/3 M KCl). DPV and SWV techniques are proposed for the determination of zolmitriptan in phosphate buffer at pH 3.03, which allows quantitation over the two different ranges (8 x 10(-7) - 8 x 10(-6) M and 1 x 10(-5) - 1 x 10(-4) M) in supporting electrolyte for both methods. A linear response was obtained in phosphate buffer over two different ranges (6 x 10(-7) - 8 x 10(-6) M and 1 x 10(-5) - 1 x 10(-4) M) for spiked serum samples at pH 3.03 for both techniques. The repeatability and reproducibility of the methods for all media were determined. The standard addition method was used in serum. Precision and accuracy were also checked in all media. No electroactive interferences from the excipients and endegenous substances were found in the pharmaceutical dosage form and the biological sample, respectively.

  11. Electrochemical oxidation of N-nitrosodimethylamine with boron-doped diamond film electrodes.

    PubMed

    Chaplin, Brian P; Schrader, Glenn; Farrell, James

    2009-11-01

    This research investigated NDMA oxidation by boron-doped diamond (BDD) film electrodes. Oxidation rates were measured as a function of electrode potential, current density, and temperature using rotating disk and flow-through reactors. Final NDMA reaction products were carbon dioxide, ammonium, and nitrate, with dimethylamine and methylamine as intermediate products. Reaction rates were first-order with respect to NDMA concentration and surface area normalized oxidation rates as high as 850 +/- 50 L/m(2)-hr were observed at a current density of 10 mA/cm(2). The flow-through reactor yielded mass transfer limited reaction rates that were first-order in NDMA concentration, with a half-life of 2.1 +/- 0.1 min. Experimental evidence indicates that NDMA oxidation proceeds via a direct electron transfer at potentials >1.8 V/SHE with a measured apparent activation energy of 3.1 +/- 0.5 kJ/mol at a potential of 2.5 V/SHE. Density functional theory calculations indicate that a direct two-electron transfer can produce a stable NDMA((+2)) species that is stabilized by forming an adduct with water. The transfer of two electrons from NDMA to the electrode allows an activation-less attack of hydroxyl radicals on the NDMA((+2)) water adduct. At higher overpotentials the oxidation of NDMA occurs by a combination of direct electron transfer and hydroxyl radicals produced via water electrolysis.

  12. Boron-doped diamond semiconductor electrodes: Efficient photoelectrochemical CO2 reduction through surface modification

    NASA Astrophysics Data System (ADS)

    Roy, Nitish; Hirano, Yuiri; Kuriyama, Haruo; Sudhagar, Pitchaimuthu; Suzuki, Norihiro; Katsumata, Ken-Ichi; Nakata, Kazuya; Kondo, Takeshi; Yuasa, Makoto; Serizawa, Izumi; Takayama, Tomoaki; Kudo, Akihiko; Fujishima, Akira; Terashima, Chiaki

    2016-11-01

    Competitive hydrogen evolution and multiple proton-coupled electron transfer reactions limit photoelectrochemical CO2 reduction in aqueous electrolyte. Here, oxygen-terminated lightly boron-doped diamond (BDDL) thin films were synthesized as a semiconductor electron source to accelerate CO2 reduction. However, BDDL alone could not stabilize the intermediates of CO2 reduction, yielding a negligible amount of reduction products. Silver nanoparticles were then deposited on BDDL because of their selective electrochemical CO2 reduction ability. Excellent selectivity (estimated CO:H2 mass ratio of 318:1) and recyclability (stable for five cycles of 3 h each) for photoelectrochemical CO2 reduction were obtained for the optimum silver nanoparticle-modified BDDL electrode at ‑1.1 V vs. RHE under 222-nm irradiation. The high efficiency and stability of this catalyst are ascribed to the in situ photoactivation of the BDDL surface during the photoelectrochemical reaction. The present work reveals the potential of BDDL as a high-energy electron source for use with co-catalysts in photochemical conversion.

  13. Boron-doped diamond nano/microelectrodes for bio-sensing and in vitro measurements

    PubMed Central

    Dong, Hua; Wang, Shihua; Galligan, James J.; Swain, Greg M.

    2015-01-01

    Since the fabrication of the first diamond electrode in the mid 1980s, repid progress has been made on the development and application of this new type of electrode material. Boron-doped diamond (BDD) electrodes exhibit outstanding properties compared to oxygen-containing sp2 carbon electrodes. These properties make BDD electrodes an ideal choice for use in complex samples. In recent years, BDD microelectrodes have been applied to in vitro and in vivo measurements of biological molecules in animals, tissues and cells. This review will summarize recent progress in the development and applications of BDD electrodes in bio-sensing and in vitro measurements of biomolecules. In the first section, the methods for BDD nanocrystalline diamond film deposition and BDD microelectrodes preparation are described. This is followed by a description and discussion of several approaches for characterization of the BDD electrode surface structure, morphology, and electrochemical activity. Further, application of BDD microelectrodes for use in the in vitro analysis of norepinephrine (NE), serotonin (5-HT), nitric oxide (NO), histamine, and adenosine from tissues are summarized and finally some of the remaining challenges are discussed. PMID:21196394

  14. High field magnetic behavior in Boron doped Fe2VAl Heusler alloys

    NASA Astrophysics Data System (ADS)

    Venkatesh, Ch.; Vasundhara, M.; Srinivas, V.; Rao, V. V.

    2016-11-01

    We have investigated the magnetic behavior of Fe2VAl1-xBx (x=0, 0.03, 0.06 and 0.1) alloys under high temperature and high magnetic field conditions separately. Although, the low temperature DC magnetization data for the alloys above x>0 show clear magnetic transitions, the zero field cooled (ZFC) and field cooled (FC) curves indicate the presence of spin cluster like features. Further, critical exponent (γ) deduced from the initial susceptibility above the Tc, does not agree with standard models derived for 3 dimensional long range magnetic systems. The deviation in γ values are consistent with the short range magnetic nature of these alloys. We further extend the analysis of magnetic behavior by carrying the magnetization measurements at high temperatures and high magnetic fields distinctly. We mainly emphasize the following observations; (i) The magnetic hysteresis loops show sharp upturns at lower fields even at 900 K for all the alloys. (ii) High temperature inverse susceptibility do not overlap until T=900 K, indicating the persistent short range magnetic correlations even at high temperatures. (iii) The Arrott's plot of magnetization data shows spontaneous moment (MS) for the x=0 alloy at higher magnetic fields which is absent at lower fields (<50 kOe), while the Boron doped samples show feeble MS at lower fields. The origin of this short range correlation is due to presence of dilute magnetic heterogeneous phases which are not detected from the X-ray diffraction method.

  15. Electrochemical Detection of Peroxynitrite using Hemin-PEDOT Functionalized Boron-Doped Diamond Microelectrode

    PubMed Central

    Peteu, Serban F.; Whitman, Brandon; Galligan, James J.; Swain, Greg M.

    2016-01-01

    Peroxynitrite is a potent nitroxidation agent and highly reactive metabolite, clinically correlated with a rich pathophysiology. Its sensitive and selective detection is challenging due to its high reactivity and short sub-second lifetime. Boron-doped diamond (BDD) microelectrodes have attracted interest because of their outstanding electroanalytical properties that include a wide working potential window and enhanced signal-to-noise ratio. Herein, we report on the modification of a BDD microelectrode with an electro-polymerized film of hemin and polyethylenedioxythiophene (PEDOT) for the purpose of selectively quantifying peroxynitrite. The nanostructured modified polymer layer was characterized by Raman spectroscopy and scanning electron microscopy (SEM). The electrochemical response to peroxynitrite was studied by voltammetry and time-based amperometry. The measured detection limit was 10 ± 0.5 nM (S/N=3), the sensitivity was 4.5 ± 0.5 nA/nM and the response time was 3.5 ± 1 s. The hemin-PEDOT BDD sensors exhibited a response variability of 5% or less (RSD). The stability of the sensors after a 20-day storage in 0.1 M PB (pH 7.4) at 4 °C was excellent as at least 93% of the initial response to 50 nM PON was maintained. The presence of PEDOT was correlated with a sensitivity increase. PMID:26862713

  16. Electrochemical oxidation and electroanalytical determination of xylitol at a boron-doped diamond electrode.

    PubMed

    Lourenço, Anabel S; Sanches, Fátima A C; Magalhães, Renata R; Costa, Daniel J E; Ribeiro, Williame F; Bichinho, Kátia M; Salazar-Banda, Giancarlo R; Araújo, Mário C U

    2014-02-01

    Xylitol is a reduced sugar with anticariogenic properties used by insulin-dependent diabetics, and which has attracted great attention of the pharmaceutical, cosmetics, food and dental industries. The detection of xylitol in different matrices is generally based on separation techniques. Alternatively, in this paper, the application of a boron-doped diamond (BDD) electrode allied to differing voltammetric techniques is presented to study the electrochemical behavior of xylitol, and to develop an analytical methodology for its determination in mouthwash. Xylitol undergoes two oxidation steps in an irreversible diffusion-controlled process (D=5.05 × 10(-5)cm(2)s(-1)). Differential pulse voltammetry studies revealed that the oxidation mechanism for peaks P1 (3.4 ≤ pH ≤ 8.0), and P2 (6.0 ≤ pH ≤ 9.0) involves transfer of 1H(+)/1e(-), and 1e(-) alone, respectively. The oxidation process P1 is mediated by the (•)OH generated at the BDD hydrogen-terminated surface. The maximum peak current was obtained at a pH of 7.0, and the electroanalytical method developed, (employing square wave voltammetry) yielded low detection (1.3 × 10(-6) mol L(-1)), and quantification (4.5 × 10(-6) mol L(-1)) limits, associated with good levels of repeatability (4.7%), and reproducibility (5.3%); thus demonstrating the viability of the methodology for detection of xylitol in biological samples containing low concentrations.

  17. Bioelectrochemical degradation of urea at platinized boron doped diamond electrodes for bioregenerative systems

    NASA Astrophysics Data System (ADS)

    Nicolau, Eduardo; González-González, Ileana; Flynn, Michael; Griebenow, Kai; Cabrera, Carlos R.

    2009-10-01

    The recovery of potable water from space mission wastewater is critical for the life support and environmental health of crew members in long-term missions. NASA estimates reveal that at manned space missions 1.91 kg/person day of urine is produced, with urea and various salts as its main components. In this research we explore the utilization of urease (EC 3.5.1.5, 15,000 U/g) along with a platinized boron doped diamond electrode (Pt-BDD) to degrade urea. Urea is directly degraded to nitrogen by the in situ utilization of the reaction products as a strategy to increase the amount of clean water in future space expeditions. The biochemical reaction of urease produces ammonia and carbon dioxide from urea. Thereafter, ammonia is electrooxidized at the interface of the Pt-BDD producing molecular nitrogen. The herein presented system has been proven to have 20% urea conversion efficiency. This research has potential applications for future long-term space missions since the reaction byproducts could be used for a biomass subsystem (in situ resource recovery), while generating electricity from the same process.

  18. Boron-doped diamond semiconductor electrodes: Efficient photoelectrochemical CO2 reduction through surface modification

    PubMed Central

    Roy, Nitish; Hirano, Yuiri; Kuriyama, Haruo; Sudhagar, Pitchaimuthu; Suzuki, Norihiro; Katsumata, Ken-ichi; Nakata, Kazuya; Kondo, Takeshi; Yuasa, Makoto; Serizawa, Izumi; Takayama, Tomoaki; Kudo, Akihiko; Fujishima, Akira; Terashima, Chiaki

    2016-01-01

    Competitive hydrogen evolution and multiple proton-coupled electron transfer reactions limit photoelectrochemical CO2 reduction in aqueous electrolyte. Here, oxygen-terminated lightly boron-doped diamond (BDDL) thin films were synthesized as a semiconductor electron source to accelerate CO2 reduction. However, BDDL alone could not stabilize the intermediates of CO2 reduction, yielding a negligible amount of reduction products. Silver nanoparticles were then deposited on BDDL because of their selective electrochemical CO2 reduction ability. Excellent selectivity (estimated CO:H2 mass ratio of 318:1) and recyclability (stable for five cycles of 3 h each) for photoelectrochemical CO2 reduction were obtained for the optimum silver nanoparticle-modified BDDL electrode at −1.1 V vs. RHE under 222-nm irradiation. The high efficiency and stability of this catalyst are ascribed to the in situ photoactivation of the BDDL surface during the photoelectrochemical reaction. The present work reveals the potential of BDDL as a high-energy electron source for use with co-catalysts in photochemical conversion. PMID:27892544

  19. Continuous and selective measurement of oxytocin and vasopressin using boron-doped diamond electrodes

    PubMed Central

    Asai, Kai; Ivandini, Tribidasari A.; Einaga, Yasuaki

    2016-01-01

    The electrochemical detection of oxytocin using boron-doped diamond (BDD) electrodes was studied. Cyclic voltammetry of oxytocin in a phosphate buffer solution exhibits an oxidation peak at +0.7 V (vs. Ag/AgCl), which is attributable to oxidation of the phenolic group in the tyrosyl moiety. Furthermore, the linearity of the current peaks obtained in flow injection analysis (FIA) using BDD microelectrodes over the oxytocin concentration range from 0.1 to 10.0 μM with a detection limit of 50 nM (S/N = 3) was high (R2 = 0.995). Although the voltammograms of oxytocin and vasopressin observed with an as-deposited BDD electrode, as well as with a cathodically-reduced BDD electrode, were similar, a clear distinction was observed with anodically-oxidized BDD electrodes due to the attractive interaction between vasopressin and the oxidized BDD surface. By means of this distinction, selective measurements using chronoamperometry combined with flow injection analysis at an optimized potential were demonstrated, indicating the possibility of making selective in situ or in vivo measurements of oxytocin. PMID:27599852

  20. 3D-nanostructured boron-doped diamond for microelectrode array neural interfacing.

    PubMed

    Piret, Gaëlle; Hébert, Clément; Mazellier, Jean-Paul; Rousseau, Lionel; Scorsone, Emmanuel; Cottance, Myline; Lissorgues, Gaelle; Heuschkel, Marc O; Picaud, Serge; Bergonzo, Philippe; Yvert, Blaise

    2015-06-01

    The electrode material is a key element in the design of long-term neural implants and neuroprostheses. To date, the ideal electrode material offering high longevity, biocompatibility, low-noise recording and high stimulation capabilities remains to be found. We show that 3D-nanostructured boron doped diamond (BDD), an innovative material consisting in a chemically stable material with a high aspect ratio structure obtained by encapsulation of a carbon nanotube template within two BDD nanolayers, allows neural cell attachment, survival and neurite extension. Further, we developed arrays of 20-μm-diameter 3D-nanostructured BDD microelectrodes for neural interfacing. These microelectrodes exhibited low impedances and low intrinsic recording noise levels. In particular, they allowed the detection of low amplitude (10-20 μV) local-field potentials, single units and multiunit bursts neural activity in both acute whole embryonic hindbrain-spinal cord preparations and long-term hippocampal cell cultures. Also, cyclic voltammetry measurements showed a wide potential window of about 3 V and a charge storage capacity of 10 mC.cm(-2), showing high potentiality of this material for neural stimulation. These results demonstrate the attractiveness of 3D-nanostructured BDD as a novel material for neural interfacing, with potential applications for the design of biocompatible neural implants for the exploration and rehabilitation of the nervous system.

  1. QUANTIFICATION OF MERCURY IN FLUE GAS EMISSION USING BORON-DOPED DIAMOND ELECTROCHEMISTRY

    SciTech Connect

    A. Manivannan; M.S. Seehra

    2003-08-19

    In this project, we have attempted to develop a new technique utilizing Boron-doped diamond (BDD) films to electrochemically detect mercury dissolved in solution via the initial deposition of metallic mercury, followed by anodic linear sweep voltammetry in the range from 10-10{sup -10} M to 10{sup -5} M. Cyclic voltammetry (CV) and differential pulse voltammetry (DPV) techniques were employed. The extremely low background current for BDD electrodes compared to glassy carbon (GC) provides a strong advantage in trace metal detection. CV peak currents showed good linearity in the micromolar range. A detection level of 6.8 x 10{sup -10} M was achieved with DPV in 0.1 M KNO{sub 3} (pH = 1) for a deposition time of 20 minutes. Reproducible stripping peaks were obtained, even for the low concentration range. A comparison with GC shows that BDD is superior. Linear behavior was also obtained in the mercury concentration range from 10{sup -10} M to 10{sup -9} M.

  2. Pressure-induced superconductivity in thin films of boron-doped carbon nanotubes

    NASA Astrophysics Data System (ADS)

    Haruyama, Junji; Nakamura, Jin; Reppert, Jason; Rao, Apparao; Sano, Hirotaka; Iye, Yasuhiro

    2010-03-01

    We have reported that thin films of slightly boron-doped single-walled carbon nanotubes (B-SWNTs) can be superconductor at Tc of 12K [1]. Here, based on this, we show creation of paperlike thin film (Buckypaper) consisting of pseudo-two-dimensional network of B-SWNTs within weakly intertube van der Waals coupling (IVDWC) state. It was formed by sufficiently dissolving as-grown ropes of B-SWNTs and densely assembling them on silicon substrate. We find that superconducting transition temperature Tc of 8 K under absent pressure can be induced up to 19 K by applying a small pressure to the film and that a frequency in the radial breathing phonon drastically increases with applying pressure [2]. Discussion about IVDWC and distribution of B-SWNTs diameter imply the strong correlation. References [1] N. Murata, J. Haruyama, J. Reppert, A. M. Rao, T. Koretsune, S. Saito, Phys. Rev. Lett. 101, 027002 (2008) [2] J. Nakamura, J. Haruyama, M. Tachibana, J. Reppert,A. Rao, H. Sano, Y. Iye et al., Appl.Phys.Lett. 95, 142503 (2009)

  3. Sub-bandgap analysis of boron doped InSe single crystals by constant photocurrent method

    NASA Astrophysics Data System (ADS)

    Bacıoğlu, A.; Ertap, H.; Karabulut, M.; Mamedov, G. M.

    2014-11-01

    Sub-bandgap absorption properties of indium selenide doped with boron atoms within a range of [B] = 0-1.8 at.% have been investigated. From the absorption coefficient spectra measured by using constant photocurrent method (CPM) at 300 K, we observed that the disorder in the structure increases. The calculated Urbach parameters, quantifying the disorder, vary from 17 to 53 meV, as [B] is increased from 0 to 1 at.%. Also the calculated optical gaps decrease from 1.28 eV to 1.17 eV for the same range of [B]. From temperature dependent dark conductivity measurements, the characteristic activation energies are calculated to range from 0.25 to 0.18 eV for vertical (to c-axis) direction; to stay almost constant for parallel (c-axis) direction. At a temperature of 12 K, the absorption coefficient spectra by using CPM and the radiative recombination spectra by photoluminescence (PL) have been taken for the samples with [B] = 0 and 0.5 at.%. Three main PL bands are observed at photon energies of ∼1.24, 1.306 and 1.337 eV. The PL bands are interpreted by corresponding absorption bands detected at 12 K and at the photon energies of ∼1.24, ∼1.31 and ∼1.35 eV.

  4. Magnetism of single-walled silicon carbide nanotubes doped by boron, nitrogen and oxygen

    NASA Astrophysics Data System (ADS)

    Maghnaoui, Ahmed; Boufelfel, Ahmed

    2012-09-01

    We calculated, using spin polarized density functional theory, the electronic properties of zigzag (10,0) and armchair (6,6) semiconductor silicon carbide nanotubes (SiCNTs) doped once at the time with boron, nitrogen, and oxygen. We have looked at the two possible scenarios where the guest atom X (B, N, O), replaces the silicon XSi, or the carbon atom XC, in the unit cell. We found that in the case of one atom B @ SiCNT replacing a carbon atom position annotated by BC exhibits a magnetic moment of 1 μB/cell in both zigzag and armchair nanotubes. Also, B replacing Si, (BSi), induce a magnetic moment of 0.46 μB/cell in the zigzag (10,0) but no magnetic moment in armchair (6,6). For N substitution; (NC) and (NSi) each case induce a magnetic moment of 1 μB/cell in armchair (6,6), while NSi give rise to 0.75 μB/cell in zigzag (10,0) and no magnetic moment for NC. In contrast the case of OC and OSi did not produce any net magnetic moment in both zigzag and armchair geometries.

  5. Electrochemical detection of arsenic(III) using iridium-implanted boron-doped diamond electrodes.

    PubMed

    Ivandini, Tribidasari A; Sato, Rika; Makide, Yoshihiro; Fujishima, Akira; Einaga, Yasuaki

    2006-09-15

    Iridium-modified, boron-doped diamond electrodes fabricated by an ion implantation method have been developed for electrochemical detection of arsenite (As(III)). Ir+ ions were implanted with an energy of 800 keV and a dose of 10(15) ion cm(-2). An annealing treatment at 850 degrees C for 45 min in H2 plasma (80 Torr) was required to rearrange metastable diamond produced by an implantation process. Characterization was investigated by SEM, AFM, Raman, and X-ray photoelectron spectroscopy. Cyclic voltammetry and flow injection analysis with amperometric detection were used to study the electrochemical reaction. The electrodes exhibited high catalytic activity toward As(III) oxidation with the detection limit (S/N = 3), sensitivity, and linearity of 20 nM (1.5 ppb), 93 nA microM(-1) cm(-2), and 0.999, respectively. The precision for 10 replicate determinations of 50 microM As(III) was 4.56% relative standard deviation. The advantageous properties of the electrodes were its inherent stability with a very low background current. The electrode was applicable for analysis of spiked arsenic in tap water containing a significant amount of various ion elements. The results indicate that the metal-implanted method could be promising for controlling the electrochemical properties of diamond electrodes.

  6. Hydrogen passivation of interstitial iron in boron-doped multicrystalline silicon during annealing

    SciTech Connect

    Liu, AnYao; Sun, Chang; Macdonald, Daniel

    2014-11-21

    Effective hydrogenation of interstitial iron in boron-doped multicrystalline silicon wafers is reported. The multicrystalline silicon wafers were annealed with plasma-enhanced chemical vapour deposited silicon nitride films, at temperatures of 400 °C – 900 °C and for times from minutes to hours. At low temperatures where a combined effect of hydrogenation and precipitation of dissolved Fe is expected, results show that the hydrogenation process dominates the effect of precipitation. The concentrations of dissolved interstitial iron reduce by more than 90% after a 30-min anneal at temperatures between 600 and 900 °C. The most effective reduction occurs at 700 °C, where 99% of the initial dissolved iron is hydrogenated after 30 min. The results show that the observed reductions in interstitial Fe concentrations are not caused by the internal gettering of Fe at structural defects or by an enhanced diffusivity of Fe due to the presence of hydrogen. The hydrogenation process is conjectured to be the pairing of positively charged iron with negatively charged hydrogen, forming less recombination active Fe-H complexes in silicon.

  7. Multichannel Boron Doped Nanocrystalline Diamond Ultramicroelectrode Arrays: Design, Fabrication and Characterization

    PubMed Central

    Kiran, Raphael; Rousseau, Lionel; Lissorgues, Gaëlle; Scorsone, Emmanuel; Bongrain, Alexandre; Yvert, Blaise; Picaud, Serge; Mailley, Pascal; Bergonzo, Philippe

    2012-01-01

    We report on the fabrication and characterization of an 8 × 8 multichannel Boron Doped Diamond (BDD) ultramicro-electrode array (UMEA). The device combines both the assets of microelectrodes, resulting from conditions in mass transport from the bulk solution toward the electrode, and of BDD's remarkable intrinsic electrochemical properties. The UMEAs were fabricated using an original approach relying on the selective growth of diamond over pre-processed 4 inches silicon substrates. The prepared UMEAs were characterized by cyclic voltammetry (CV) and electrochemical impedance spectroscopy (EIS). The results demonstrated that the electrodes have exhibited a very fast electrode transfer rate (k0) up to 0.05 cm·s−1 (in a fast redox couple) and on average, a steady state limiting current (in a 0.5 M potassium chloride aqueous solution containing 1 mM Fe(CN)64− ion at 100 mV·s−1) of 1.8 nA. The UMEAs are targeted for electrophysiological as well as analytical applications. PMID:22969367

  8. Electrochemical oxidation of biological pretreated and membrane separated landfill leachate concentrates on boron doped diamond anode

    NASA Astrophysics Data System (ADS)

    Zhou, Bo; Yu, Zhiming; Wei, Qiuping; Long, HangYu; Xie, Youneng; Wang, Yijia

    2016-07-01

    In the present study, the high quality boron-doped diamond (BDD) electrodes with excellent electrochemical properties were deposited on niobium (Nb) substrates by hot filament chemical vapor deposition (HFCVD) method. The electrochemical oxidation of landfill leachate concentrates from disc tube reverse osmosis (DTRO) process over a BDD anode was investigated. The effects of varying operating parameters, such as current density, initial pH, flow velocity and cathode material on degradation efficiency were also evaluated following changes in chemical oxygen demand (COD) and ammonium nitrogen (NH3sbnd N). The instantaneous current efficiency (ICE) was used to appraise different operating conditions. As a result, the best conditions obtained were as follows, current density 50 mA cm-2, pH 5.16, flow velocity 6 L h-1. Under these conditions, 87.5% COD and 74.06% NH3sbnd N removal were achieved after 6 h treatment, with specific energy consumption of 223.2 kWh m-3. In short, these results indicated that the electrochemical oxidation with BDD/Nb anode is an effective method for the treatment of landfill leachate concentrates.

  9. Cadmium detection via boron-doped diamond electrodes: surfactant inhibited stripping voltammetry.

    PubMed

    Banks, Craig E; Hyde, Michael E; Tomčík, Peter; Jacobs, Robert; Compton, Richard G

    2004-02-06

    The deposition of cadmium on boron-doped diamond is investigated with square-wave anodic stripping voltammetry. The system was investigated in quiescent conditions, in the presence of an acoustic field and then in the presence of the neutral surfactant Triton((R)) X-100. The effect of optimised insonation was to increase the sensitivity from 0.63 (under silent conditions) to 3.78muAmuM(-1) and to reduce the limit of detection by an order of magnitude from 10(-8) to 10(-9)M. Measurements with or without insonation were found to deteriorate in the presence of the surfactant. Studies using AFM and chronoamperometry showed that this was due to inhibition of the deposition of the metal. Comparative data obtained for analogous measurements for copper on glassy carbon in the presence of industrial effluent, which also leads to signal deterioration under silent but not insonated conditions, showed that for this case also it was the nucleation of copper rather than the metal dissolution which was adversely affected.

  10. Semiconducting polymers with nanocrystallites interconnected via boron-doped carbon nanotubes.

    PubMed

    Yu, Kilho; Lee, Ju Min; Kim, Junghwan; Kim, Geunjin; Kang, Hongkyu; Park, Byoungwook; Ho Kahng, Yung; Kwon, Sooncheol; Lee, Sangchul; Lee, Byoung Hun; Kim, Jehan; Park, Hyung Il; Kim, Sang Ouk; Lee, Kwanghee

    2014-12-10

    Organic semiconductors are key building blocks for future electronic devices that require unprecedented properties of low-weight, flexibility, and portability. However, the low charge-carrier mobility and undesirable processing conditions limit their compatibility with low-cost, flexible, and printable electronics. Here, we present significantly enhanced field-effect mobility (μ(FET)) in semiconducting polymers mixed with boron-doped carbon nanotubes (B-CNTs). In contrast to undoped CNTs, which tend to form undesired aggregates, the B-CNTs exhibit an excellent dispersion in conjugated polymer matrices and improve the charge transport between polymer chains. Consequently, the B-CNT-mixed semiconducting polymers enable the fabrication of high-performance FETs on plastic substrates via a solution process; the μFET of the resulting FETs reaches 7.2 cm(2) V(-1) s(-1), which is the highest value reported for a flexible FET based on a semiconducting polymer. Our approach is applicable to various semiconducting polymers without any additional undesirable processing treatments, indicating its versatility, universality, and potential for high-performance printable electronics.

  11. Simultaneous hydrogen production and electrochemical oxidation of organics using boron-doped diamond electrodes.

    PubMed

    Jiang, Juyuan; Chang, Ming; Pan, Peng

    2008-04-15

    This paper presents advantages of using a boron-doped diamond (BDD) electrode for hydrogen production and wastewater treatment in a single electrochemical cell. Results indicated that the BDD electrode possessed the widest known electrochemical window, allowing new possibilities for both anodic and cathodic reactions to simultaneously take place. The BDD electrode exhibited high anodic potential, generating high oxidation state radicals that facilitated oxidation of toxic waste organic compounds such as 4-nitrophenols. In contrast, because of widening of potential windows, the rate of hydrogen evolution at the cathode was significantly increased. Time-on-stream concentrations of reaction intermediates were monitored to elucidate mechanism involved in 4-nitrophenol oxidation. Spalling, fouling, or reduction in the thickness of thin-film diamond coating was not observed. Overall, the BDD electrode exhibits unique properties including chemical inertness, anticorrosion, and extended service life. These properties are especially important in wastewater treatment. Economic advantages were attributed to the low cost and long duration BDD electrode and the valuable hydrogen byproduct produced. Analysis has shown that technology associated with the BDD electrode could be effectively implemented with minimum energy input and capital requirements. When combined with solar energy and fuel cells, electrochemical wastewater processing can become energy efficient and cost-effective.

  12. Kinetic study of electro-Fenton oxidation of azo dyes on boron-doped diamond electrode.

    PubMed

    Almomani, Fares; Baranova, Elena A

    2013-01-01

    The present work compares electrochemical degradation of red and blue azo textile dyes in single- and two-compartment electrochemical cells in the presence of Fenton reagent (Fe2+) and using a boron-doped diamond anode. Degradation of both dyes was related to the concentration of dye, applied current density and the concentration of FeSO4 catalyst. Complete colour removal and approximately 91% of organic matter oxidation was achieved in a two-compartment electrochemical cell at an applied current density of 20 mA x cm(-2), pH of 3 and Fe(2+) ion concentration of 0.02 mM. Higher current density and reaction time were required to achieve the same removals in a one-compartment electrochemical cell. Dye degradation kinetics as well as chemical oxygen demand removal rate were successfully modelled to pseudo first-order kinetics. The apparent first-order rate constants (k(o)) for degradation of red dye with an initial concentration of 20, 40 and 60 ppm were found to be 2.67 +/- 0.16, 2.19 +/- 0.09 and 1.5 +/- 0.03 min(-1), and for blue dye at the same initial concentrations were 1.99 +/- 0.2, 0.95 +/- 0.02 and 0.71 +/- 0.030 min(-1), respectively.

  13. Microwave activated electrochemical degradation of 2,4-dichlorophenoxyacetic acid at boron-doped diamond electrode.

    PubMed

    Gao, Junxia; Zhao, Guohua; Shi, Wei; Li, Dongming

    2009-04-01

    A method for improving the oxidation ability of the electrode is proposed by using microwave activation in electrochemical oxidation. The electrochemical degradation of 2,4-dichlorophenoxyacetic acid (2,4-D) with microwave radiation (MW-EC) was carried out in a continuous flow system under atmospheric pressure. In 3 h the removal of COD, ACE (average current efficiency) and Cl(-) concentration was 1.63, 2.25 and 1.67 times as that without microwave radiation, respectively. The high degradation ability was resulted from the more active centers at the electrode surface due to the microwave radiation. The decay kinetics of 2,4-D followed a pseudo first-order reaction. The rate constant was increased to 2.16x10(-4) s(-1) with the microwave radiation, while it was 8.52x10(-5) s(-1) with electrochemical treatment only (EC). Under both conditions, the main intermediates were identified and quantified by High Performance Liquid Chromatography (HPLC). The formation rate of intermediate products and further degradation rate were increased by about 50-120% with the microwave radiation. The activation of electrochemical oxidation by microwave was discussed from the diffusion process, adsorption and the temperature at boron-doped diamond (BDD) electrode.

  14. Label-free DNA sensor by boron-doped diamond electrode using an ac impedimetric approach.

    PubMed

    Weng, Jian; Zhang, Jianfeng; Li, Hui; Sun, Liping; Lin, Chenghong; Zhang, Qiqing

    2008-09-15

    An electrochemical biosensor using a boron-doped diamond (BDD) electrode is described for differentiating between gene sequences according to DNA hybridization events using an ac impedimetric approach. BDD electrodes were dipped into a 1% solution of polyethylenimine (PEI) to adsorb a thin layer of positively charged PEI on the surface of BDD, then PEI-modified BDD electrodes were used to immobilize negatively charged single-stranded PCR fragments from Exon 7 of human p53 gene. Alternating current impedimetric measurements were first performed on these systems in phosphate buffered saline (PBS) and then upon exposure to single-stranded DNA (ssDNA). When the ssDNA-immobilized BDD electrode and solution ssDNA were completely complementary, a large drop in impedance was measured. Complementary DNA could be clearly detected at concentrations down to 10 (-19) g mL (-1) at a fixed frequency (10 Hz). Higher concentrations of DNA gave faster hybridization with saturation occurring at levels above 1.0 pg mL (-1.) Responses were much lower upon exposure to noncDNA, even at higher concentrations. The results show it is possible to directly detect target DNA at a fixed frequency and without additional labeling.

  15. Effect of ultraviolet light exposure to boron doped hydrogenated amorphous silicon oxide thin film

    NASA Astrophysics Data System (ADS)

    Baek, Seungsin; Iftiquar, S. M.; Jang, Juyeon; Lee, Sunhwa; Kim, Minbum; Jung, Junhee; Park, Hyeongsik; Park, Jinjoo; Kim, Youngkuk; Shin, Chonghoon; Lee, Youn-Jung; Yi, Junsin

    2012-11-01

    We have investigated the effect of ultraviolet (UV) light exposure to boron doped (p-type) hydrogenated amorphous silicon oxide (p-a-SiO:H) thin semiconductor films by measuring changes in its structural, electrical and optical properties. After a 50 h of UV light soaking (LS) of the films, that have 1.2, 6.9, 15.2, 25.3 at.% oxygen content (C(O)) and optical gap (E04) of 1.897, 2.080, 2.146 and 2.033 eV, show a relative increase in the C(O) by 28.0%, 9.8%, 2.0%, 3.1%, a relative increase in the Urbach energy (Eu) by 42%, 24%, 8%, 0%, decrease in the E04 by 66, 2, 12, 19 meV and the gap state defect density (Nd) show an increase by 6.5%, 3.4%, 0.7%, 0.1%. At higher oxygen content the observed UV light induced degradation (LID) is relatively less than that for films with lower oxygen content, indicating that higher oxides face less changes under the UV light.

  16. Osmium Atoms and Os2 Molecules Move Faster on Selenium-Doped Compared to Sulfur-Doped Boronic Graphenic Surfaces.

    PubMed

    Barry, Nicolas P E; Pitto-Barry, Anaïs; Tran, Johanna; Spencer, Simon E F; Johansen, Adam M; Sanchez, Ana M; Dove, Andrew P; O'Reilly, Rachel K; Deeth, Robert J; Beanland, Richard; Sadler, Peter J

    2015-07-28

    We deposited Os atoms on S- and Se-doped boronic graphenic surfaces by electron bombardment of micelles containing 16e complexes [Os(p-cymene)(1,2-dicarba-closo-dodecarborane-1,2-diselenate/dithiolate)] encapsulated in a triblock copolymer. The surfaces were characterized by energy-dispersive X-ray (EDX) analysis and electron energy loss spectroscopy of energy filtered TEM (EFTEM). Os atoms moved ca. 26× faster on the B/Se surface compared to the B/S surface (233 ± 34 pm·s(-1) versus 8.9 ± 1.9 pm·s(-1)). Os atoms formed dimers with an average Os-Os distance of 0.284 ± 0.077 nm on the B/Se surface and 0.243 ± 0.059 nm on B/S, close to that in metallic Os. The Os2 molecules moved 0.83× and 0.65× more slowly than single Os atoms on B/S and B/Se surfaces, respectively, and again markedly faster (ca. 20×) on the B/Se surface (151 ± 45 pm·s(-1) versus 7.4 ± 2.8 pm·s(-1)). Os atom motion did not follow Brownian motion and appears to involve anchoring sites, probably S and Se atoms. The ability to control the atomic motion of metal atoms and molecules on surfaces has potential for exploitation in nanodevices of the future.

  17. Photoluminescence properties of thermographic phosphors YAG:Dy and YAG:Dy, Er doped with boron and nitrogen

    NASA Astrophysics Data System (ADS)

    Chepyga, Liudmyla M.; Jovicic, Gordana; Vetter, Andreas; Osvet, Andres; Brabec, Christoph J.; Batentschuk, Miroslaw

    2016-08-01

    This paper investigates Dy3+-doped and Dy3+, Er3+-co-doped yttrium aluminum garnets (YAG) with the admixture of boron nitride with the aim of using them as efficient thermographic phosphors at high temperatures. The phosphors were synthesized using a conventional high-temperature solid-state method. The influence of two fluxes, B2O3 and LiF/NH4F, and the effect of activator and coactivator concentrations were investigated. Additionally, the effect of B3+ and N3- substituting for Al3+ and O2- ions, respectively, in the YAG:Dy3+ co-doped with Er3+ was studied for the first time. The changes in the host lattice led to a much stronger photoluminescence compared with the samples without B3+ and N3- substitution. The admixture of BN also improves the thermal sensitivity of the YAG:Dy and YAG:Dy, Er thermographic phosphors.

  18. Empirical determination of the energy band gap narrowing in p{sup +} silicon heavily doped with boron

    SciTech Connect

    Yan, Di Cuevas, Andres

    2014-11-21

    In the analysis of highly doped silicon, energy band gap narrowing (BGN) and degeneracy effects may be accounted for separately, as a net BGN in conjunction with Fermi-Dirac statistics, or lumped together in an apparent BGN used with Boltzmann statistics. This paper presents an experimental study of silicon highly doped with boron, with the aim of evaluating the applicability of previously reported BGN models. Different boron diffusions covering a broad range of dopant densities were prepared, and their characteristic recombination current parameters J{sub 0} were measured using a contactless photoconductance technique. The BGN was subsequently extracted by matching theoretical simulations of carrier transport and recombination in each of the boron diffused regions and the measured J{sub 0} values. An evaluation of two different minority carrier mobility models indicates that their impact on the extraction of the BGN is relatively small. After considering possible uncertainties, it can be concluded that the BGN is slightly larger in p{sup +} silicon than in n{sup +} silicon, in qualitative agreement with theoretical predictions by Schenk. Nevertheless, in quantitative terms that theoretical model is found to slightly underestimate the BGN in p{sup +} silicon. With the two different parameterizations derived in this paper for the BGN in p{sup +} silicon, both statistical approaches, Boltzmann and Fermi-Dirac, provide a good agreement with the experimental data.

  19. Hard magnetic property enhancement of Co{sub 7}Hf-based ribbons by boron doping

    SciTech Connect

    Chang, H. W.; Liao, M. C.; Shih, C. W.; Chang, W. C.; Yang, C. C.; Hsiao, C. H.; Ouyang, H.

    2014-11-10

    Hard magnetic property enhancement of melt spun Co{sub 88}Hf{sub 12} ribbons by boron doping is demonstrated. B-doping could not only remarkably enhance the magnetic properties from energy product ((BH){sub max}) of 2.6 MGOe and intrinsic coercivity ({sub i}H{sub c}) of 1.5 kOe for B-free Co{sub 88}Hf{sub 12} ribbons to (BH){sub max} = 7.7 MGOe and {sub i}H{sub c} = 3.1 kOe for Co{sub 85}Hf{sub 12}B{sub 3} ribbons but also improve the Curie temperature (T{sub C}) of 7:1 phase. The (BH){sub max} value achieved in Co{sub 85}Hf{sub 12}B{sub 3} ribbons is the highest in Co-Hf alloy ribbons ever reported, which is about 15% higher than that of Co{sub 11}Hf{sub 2}B ribbons spun at 16 m/s [M. A. McGuire, O. Rios, N. J. Ghimire, and M. Koehler, Appl. Phys. Lett. 101, 202401 (2012)]. The structural analysis confirms that B enters the orthorhombic Co{sub 7}Hf (7:1) crystal structure as interstitial atoms, forming Co{sub 7}HfB{sub x}, in the as-spun state. Yet B may diffuse out from the 7:1 phase after post-annealing, leading to the reduction of Curie temperature and the magnetic properties. The uniformly refined microstructure with B-doping results in high remanence (B{sub r}) and improves the squareness of demagnetization curve. The formation of interstitial-atom-modified Co{sub 7}HfB{sub x} phase and the microstructure refinement are the main reasons to give rise to the enhancement of hard magnetic properties in the B-containing Co{sub 7}Hf-based ribbons.

  20. Investigation of Boron-doping Effect on Photoluminescence Properties of CdNb2O6: Eu(3+) Phosphors.

    PubMed

    Başak, Ali Sadi; Ekmekçi, Mete Kaan; Erdem, Murat; Ilhan, Mustafa; Mergen, Ayhan

    2016-03-01

    Pure, Eu(3+) - doped and Eu(3+),B(3+) co-doped CdNb2O6 powders have been prepared by a molten salt synthesis method using Li2SO4/Na2SO4 salt mixture as a flux at a relatively low temperatures as compared to solid state reaction. X-ray diffraction patterns of pure CdNb2O6 samples indicated orthorhombic single phase. Photoluminescence investigations of CdNb2O6 samples showed a strong blue emission band centered at 460 nm. For Eu-doped CdNb2O6 samples, the luminescence of Eu(3+) was observed with the host red emission varying with the Eu-doping concentrations. This PL characteristic of the doped samples may be attributed to the energy transfer between Eu(3+) and niobate groups (NbO6). Boron incorporation has remarkably increased the luminescence of Eu(3+)-doped CdNb2O6.

  1. Development of boron-doped diamond thin-films as voltammetric and amperometric detectors

    NASA Astrophysics Data System (ADS)

    Xu, Jishou

    2000-10-01

    The utilization of boron-doped diamond thin-films for applications in electroanalysis was investigated. Voltammetric analysis in static solution, and amperometric detection coupled with flow injection analysis and HPLC were performed. The results were compared to those for glassy carbon. The electroactivity, the merit of detection figures, the adsorption of polar organic molecules, and the resistance to fouling were studied. Surface characterization was performed to elucidate the surface property-electroacticvity relationship. The results showed that diamond thin-films, compared with glassy carbon, had comparable electroactivity to simple electron transfer processes (e.g., Ru(NH3)6+2/+3, Fe(CN)6 -3/-4, IrCl6-2/-3, azide, chlorpromazine), but had lower electroactivity for the electron transfer processes involving surface-confined intermediate (e.g., hydrogen evolution, oxygen evolution, 4-methyl catechol, hydrazine). The diamond thin-films had a wide working potential up to 4.0 V in aqueous media. They also had small double layer capacitance, voltammetric background current, and amperometric residual current. These properties had leaded to higher signal-to-background ratios and signal-to-noise ratios. The diamond thin-films had lower limits of detection in voltammetric measurements of several analytes, and had lower limits of detection in amperometric measurements of all compounds studied. The diamond thin-films had negligible adsorption of polar organic molecules (e.g., anthraquinone 2,6-disulfonate, chlorpromazine), compared to glassy carbon. This is due to the fact that the diamond surfaces are primarily composed of sp3 carbon and hydrogen terminated. This leaded to less decay of the electroactivity by storage and operation, and higher resistance to fouling. The surface property-electroactivity relationship depends on the specific mechanism for electron transfer. The extent of non-diamond impurities (e.g., oxygen evolution), diamond crystalline size, surface

  2. Compositional and structural studies of nanoscale boron-doped nickel aluminide films

    NASA Astrophysics Data System (ADS)

    Sulcer, Jarvis Dwayne

    This thesis presents a detailed investigation of the composition and microstructure of boron-doped nickel aluminide thin films fabricated via ion beam sputtering. Findings are related to film growth mode, fabrication conditions, and mechanical properties. Results from the characterization of the composition and structure of Ni3Al:B films having thicknesses ranging from ˜300 to ˜2600 A deposited on substrates of plastic, NaCl and Si at a temperature of ˜300 K by Kaufman-type ion beam sputtering of a Ni3Al:B compound target are reported. The bulk composition of the films was investigated using instrumental neutron activation analysis (INAA) and Rutherford backscattering spectrometry (RBS). It was determined by INAA and RBS that the bulk Ni/Al atomic ratio of the target can be replicated in films fabricated on single crystal NaCl substrates. However, results from the measurement of the local composition by energy dispersive X-ray (EDX) and electron energy loss spectroscopy (EELS) via scanning transmission electron microscopy (STEM) reveal that the local Ni/Al atomic ratio is higher. This is the result of preferential sputtering of Ni due to recoil implantation of Al in the compound Ni3Al:B target. The spatial distribution of boron in the films was determined via neutron depth profiling (NDP). Grazing incidence X-ray diffraction studies reveal that films grown on Si and NaCl are polycrystalline and show the (111) crystallographic plane. The absence of superlattice peaks at (100), (110), (210) and (211) in the diffraction spectra indicate that the films are also in a state of disorder. It was determined from annular dark field images produced via STEM of 300, 560 A, and 600 A thin films that the average size of grains was 30 +/- 3 A. This cluster size is characteristic of films that have a very fine-grain microstructure and yield stresses of hundreds of MPa since the yield stress increases with decreasing grain size. The coalescence of clusters as observed via BF and

  3. Diffusion-driven precipitate growth and ripening of oxygen precipitates in boron doped silicon by dynamical x-ray diffraction

    SciTech Connect

    Will, J. Gröschel, A.; Bergmann, C.; Magerl, A.; Spiecker, E.

    2014-03-28

    X-ray Pendellösung fringes from three silicon single crystals measured at 900 °C are analyzed with respect to density and size of oxygen precipitates within a diffusion-driven growth model and compared with TEM investigations. It appears that boron doped (p+) material shows a higher precipitate density and a higher strain than moderately (p-) boron crystals. In-situ diffraction reveals a diffusion-driven precipitate growth followed by a second growth regime in both materials. An interpretation of the second growth regime in terms of Ostwald ripening yields surface energy values (around 70 erg/cm{sup 2}) similar to published data. Further, an increased nucleation rate by a factor of ∼13 is found in the p+ sample as compared to a p- sample at a nucleation temperature of 450 °C.

  4. Use of B{sub 2}O{sub 3} films grown by plasma-assisted atomic layer deposition for shallow boron doping in silicon

    SciTech Connect

    Kalkofen, Bodo Amusan, Akinwumi A.; Bukhari, Muhammad S. K.; Burte, Edmund P.; Garke, Bernd; Lisker, Marco; Gargouri, Hassan

    2015-05-15

    Plasma-assisted atomic layer deposition (PALD) was carried for growing thin boron oxide films onto silicon aiming at the formation of dopant sources for shallow boron doping of silicon by rapid thermal annealing (RTA). A remote capacitively coupled plasma source powered by GaN microwave oscillators was used for generating oxygen plasma in the PALD process with tris(dimethylamido)borane as boron containing precursor. ALD type growth was obtained; growth per cycle was highest with 0.13 nm at room temperature and decreased with higher temperature. The as-deposited films were highly unstable in ambient air and could be protected by capping with in-situ PALD grown antimony oxide films. After 16 weeks of storage in air, degradation of the film stack was observed in an electron microscope. The instability of the boron oxide, caused by moisture uptake, suggests the application of this film for testing moisture barrier properties of capping materials particularly for those grown by ALD. Boron doping of silicon was demonstrated using the uncapped PALD B{sub 2}O{sub 3} films for RTA processes without exposing them to air. The boron concentration in the silicon could be varied depending on the source layer thickness for very thin films, which favors the application of ALD for semiconductor doping processes.

  5. Sulfate-mediated electrooxidation of X-ray contrast media on boron-doped diamond anode.

    PubMed

    Radjenovic, Jelena; Petrovic, Mira

    2016-05-01

    Recently, electrochemical activation of sulfate ions to sulfate radical species and nonradically activated persulfate has been demonstrated at boron-doped diamond (BDD) anode, which enhanced the electrooxidation kinetics of several persistent contaminants. In this study, we investigated the transformation pathways of two X-ray contrast media (ICM), diatrizoate and iopromide, in electrooxidation at BDD anode using sulfate and inert nitrate anolyte. Sulfate anolyte yielded a seven-fold increase in apparent rate constants for ICM oxidation compared to inert nitrate anolyte, and a two-fold increase for the removal of organic carbon. Higher iodine release was observed in electrooxidation of diatrizoate compared to iopromide. In the case of diatrizoate, around 80% of deiodination efficiency was achieved in both anolytes. Deiodination efficiency of iopromide was somewhat lower in nitrate anolyte (≤75%) and significantly reduced in sulfate anolyte (≤46%) due to a larger steric hindrance of alkyl side chains. Moreover, a considerable lag phase of iopromide deiodination was observed in sulfate anolyte, indicating that initial oxidation reactions took place almost exclusively at the alkyl side chains. Several transformation products (TPs) of ICM were identified in electrooxidation in sulfate anolyte, and only three TPs in the case of nitrate anolyte. The main mechanistic steps in the oxidation of iopromide were H-abstraction and bond cleavage in the alkyl side chains. Diatrizoate was mainly transformed through oxidative cleavage of iodine substituent and inter-molecular cyclization. Two hydroxylamine derivatives of iopromide and a nitro-derivative of diatrizoate were observed in sulfate anolyte. These products have not been reported previously for hydroxyl radical-mediated oxidation of ICM. Given that electron-transfer mechanism is more typical for sulfate than for hydroxyl radicals, formation of hydroxylamine and nitro-derivatives of ICM was assigned to one

  6. Bioelectrochemical degradation of urea at platinized boron doped diamond electrodes for bioregenerative applications

    NASA Astrophysics Data System (ADS)

    Nicolau, Eduardo; Gonzalez, Ileana; Nicolau, Eduardo; Cabrera, Carlos R.

    The recovery of potable water from space mission wastewater is critical for the life support and environmental health of crew members in long-term missions. NASA estimates reveal that at manned space missions 0.06 kg/person·day of urine is produced, with urea and various salts as its main components. Current spacecraft water reclamation strategies include the utilization of not only multifiltration systems (MF) and reverse osmosis (RO), but also biological components to deal with crew urine streams. In this research we explore the utilization of urease (EC 3.5.1.5) to convert urea directly to nitrogen by the in-situ utilization of the reaction products, to increase the amount of clean water in future space expeditions. First of all, platinum was electrodeposited on boron doped diamond electrodes by cycling the potential between -0.2 V and 1.0 V in metal/0.5 M H2SO4 solution. SEM images of the electrodes showed a distribution of platinum nanoparticles ranging between 50 nm and 300 nm. The biochemical reaction of urease in nature produces ammonia and carbon dioxide from urea. Based on this, Cyclic Voltammetry experiments of an ammonium acetate solution at pH 10 were performed showing an anodic peak at -0.3 V vs. Ag/AgCl due to the ammonia oxidation. Then, a urease solution (Jack Bean) was poured into the electrochemical cell and subsequent additions of urea were performed with the potential held at -0.3 V in order to promote ammonia oxidation. Chronoamperometry data shows that with more than five urea additions the enzyme still responding by producing ammonia, which is being subsequently oxidized at the electrode surface and producing molecular nitrogen. This research has tremendous applications for future long-term space missions since the reaction byproducts could be used for a biomass subsystem (in-situ resource recovery), while generating electricity from the same process.

  7. Kinetics of the electrochemical mineralization of perfluorooctanoic acid on ultrananocrystalline boron doped conductive diamond electrodes.

    PubMed

    Urtiaga, Ane; Fernández-González, Carolina; Gómez-Lavín, Sonia; Ortiz, Inmaculada

    2015-06-01

    This work deals with the electrochemical degradation and mineralization of perfluorooctanoic acid (PFOA). Model aqueous solutions of PFOA (100mg/L) were electro-oxidized under galvanostatic conditions in a flow-by undivided cell provided with a tungsten cathode and an anode formed by a commercial ultrananocrystalline boron doped diamond (BDD) coating on a niobium substrate. A systematic experimental study was conducted in order to analyze the influence of the following operation variables: (i) the supporting electrolyte, NaClO4 (1.4 and 8.4g/L) and Na2SO4 (5g/L); (ii) the applied current density, japp, in the range 50-200 A/m(2) and (iii) the hydrodynamic conditions, in terms of flowrate in the range 0.4×10(-4)-1.7×10(-4)m(3)/s and temperature in the range 293-313K. After 6h of treatment and at japp 200A/m(2), PFOA removal was higher than 93% and the mineralization ratio, obtained from the decrease of the total organic carbon (TOC) was 95%. The electrochemical generation of hydroxyl radicals in the supporting electrolyte was experimentally measured based on their reaction with dimethyl sulfoxide. The enhanced formation of hydroxyl radicals at higher japp was related to the faster kinetics of PFOA removal. The fitting of experimental data to the proposed kinetic model provided the first order rate constants of PFOA degradation, kc(1) that moved from 2.06×10(-4) to 15.58×10(-4)s(-1), when japp varied from 50 to 200A/m(2).

  8. Advanced treatment of biologically pretreated coking wastewater by electrochemical oxidation using boron-doped diamond electrodes.

    PubMed

    Zhu, Xiuping; Ni, Jinren; Lai, Peng

    2009-09-01

    Electrochemical oxidation is a promising technology to treatment of bio-refractory wastewater. Coking wastewater contains high concentration of refractory and toxic compounds and the water quality usually cannot meet the discharge standards after conventional biological treatment processes. This paper initially investigated the electrochemical oxidation using boron-doped diamond (BDD) anode for advanced treatment of coking wastewater. Under the experimental conditions (current density 20-60mAcm(-2), pH 3-11, and temperature 20-60 degrees C) using BDD anode, complete mineralization of organic pollutants was almost achieved, and surplus ammonia-nitrogen (NH(3)-N) was further removed thoroughly when pH was not adjusted or at alkaline value. Moreover, the TOC and NH(3)-N removal rates in BDD anode cell were much greater than those in other common anode systems such as SnO(2) and PbO(2) anodes cells. Given the same target to meet the National Discharge Standard of China, the energy consumption of 64kWhkgCOD(-1) observed in BDD anode system was only about 60% as much as those observed in SnO(2) and PbO(2) anode systems. Further investigation revealed that, in BDD anode cell, organic pollutants were mainly degraded by reaction with free hydroxyl radicals and electrogenerated oxidants (S(2)O(8)(2-), H(2)O(2), and other oxidants) played a less important role, while direct electrochemical oxidation and indirect electrochemical oxidation mediated by active chlorine can be negligible. These results showed great potential of BDD anode system in engineering application as a final treatment of coking wastewater.

  9. Effect of select organic compounds on perchlorate formation at boron-doped diamond film anodes.

    PubMed

    Donaghue, Adrienne; Chaplin, Brian P

    2013-01-01

    Rates of ClO4(-) formation from ClO3(-) oxidation were investigated in batch experiments as a function of organic compounds (p-nitrophenol, p-benzoquinone, p-methoxyphenol, and oxalic acid) and current density using boron-doped diamond film anodes. Excluding organics, ClO4(-) formation rates ranged from 359 to 687 μmoles m(-2) min(-1) for current densities of 1-10 mA cm(-2). The presence of p-substituted phenols inhibited ClO4(-) formation rates between 13.0 and 99.6%. Results from a reactive-transport model of the diffuse layer adjacent to the anode surface indicate that competition between organics and ClO3(•) for OH(•) within a reaction zone (0.02-0.96 μm) adjacent to the anode controls ClO4(-) formation. Under kinetic-limited conditions (1.0 mA cm(-2)), organics reach the anode surface and substrates with higher OH(•) reaction rates demonstrate greater inhibition of perchlorate formation (IPF). At higher current densities (10 mA cm(-2)), organic compound oxidation becomes mass transfer-limited and compounds degrade a small distance from the anode surface (∼ 0.26 μm for p-methoxyphenol). Therefore, OH(•) scavenging does not occur at the anode surface and IPF values decrease. Results provide evidence for the existence of desorbed OH(•) near the anode surface and highlight the importance of controlling reactor operating conditions to limit ClO4(-) production during anodic treatment of organic compounds.

  10. Mechanism of perchlorate formation on boron-doped diamond film anodes.

    PubMed

    Azizi, Orchideh; Hubler, David; Schrader, Glenn; Farrell, James; Chaplin, Brian P

    2011-12-15

    This research investigated the mechanism of perchlorate (ClO(4)(-)) formation from chlorate (ClO(3)(-)) on boron-doped diamond (BDD) film anodes by use of a rotating disk electrode reactor. Rates of ClO(4)(-) formation were determined as functions of the electrode potential (2.29-2.70 V/standard hydrogen electrode, SHE) and temperature (10-40 °C). At all applied potentials and a ClO(3)(-) concentration of 1 mM, ClO(4)(-) production rates were zeroth-order with respect to ClO(4)(-) concentration. Experimental and density functional theory (DFT) results indicate that ClO(3)(-) oxidation proceeds via a combination of direct electron transfer and hydroxyl radical oxidation with a measured apparent activation energy of 6.9 ± 1.8 kJ·mol(-1) at a potential of 2.60 V/SHE. DFT simulations indicate that the ClO(4)(-) formation mechanism involves direct oxidation of ClO(3)(-) at the BDD surface to form ClO(3)(•), which becomes activationless at potentials > 0.76 V/SHE. Perchloric acid is then formed via the activationless homogeneous reaction between ClO(3)(•) and OH(•) in the diffuse layer next to the BDD surface. DFT simulations also indicate that the reduction of ClO(3)(•) can occur at radical sites on the BDD surface to form ClO(3)(-) and ClO(2), which limits the overall rate of ClO(4)(-) formation.

  11. Structure, Electronic Properties, and Electrochemical Behavior of a Boron-Doped Diamond/Quartz Optically Transparent Electrode.

    PubMed

    Wächter, Naihara; Munson, Catherine; Jarošová, Romana; Berkun, Isil; Hogan, Timothy; Rocha-Filho, Romeu C; Swain, Greg M

    2016-05-31

    The morphology, microstructure, chemistry, electronic properties, and electrochemical behavior of a boron-doped nanocrystalline diamond (BDD) thin film grown on quartz were evaluated. Diamond optically transparent electrodes (OTEs) are useful for transmission spectroelectrochemical measurements, offering excellent stability during anodic and cathodic polarization and exposure to a variety of chemical environments. We report on the characterization of a BDD OTE by atomic force microscopy, optical spectroscopy, Raman spectroscopic mapping, alternating-current Hall effect measurements, X-ray photoelectron spectroscopy, and electrochemical methods. The results reported herein provide the first comprehensive study of the relationship between the physical and chemical structure and electronic properties of a diamond OTE and the electrode's electrochemical activity.

  12. Influence of Ball-Milling Treatment of B Original Powder on the Phase Formation and Critical Current Density of Graphite Doped MgB

    NASA Astrophysics Data System (ADS)

    Su, Xiaocheng; Jiang, Qingguo; Zuo, Anying

    2014-10-01

    In present work, the sintering process and superconducting properties of graphite doped MgB prepared with milled B original powder were investigated. It is found that ball milling treatment of B original powder obviously suppresses the solid-solid reaction between Mg and B, whereas it enhances their liquid-solid reaction during the subsequent sintering process of these graphite doped MgB bulks. Ball milling treatment of B original powder can also promote C substitution for B sites in MgB crystal lattice in the graphite-doped samples, and thus obviously increase their values of at high fields. Moreover, ball milling also refines MgB grains, enhancing grain boundary pinning and at high fields.

  13. MnTe semiconductor-sensitized boron-doped TiO2 and ZnO photoelectrodes for solar cell applications.

    PubMed

    Tubtimtae, Auttasit; Arthayakul, Khanittha; Teekwang, Bussayanee; Hongsith, Kritsada; Choopun, Supab

    2013-09-01

    We report a new tailoring MnTe semiconductor-sensitized solar cells (MnTe SSCs) using successive ionic layer adsorption and reaction (SILAR) technique. X-ray diffraction and SAED patterns reveal the orthorhombic MnTe and cubic MnTe2 phases were grown on boron-doped TiO2 and ZnO nanoparticles. The diameter of MnTe NPs ranged from 15 to 30nm on both B-doped metal oxide structures. The energy gaps of metal oxide become narrower after boron doping, which have an advantage for enhancing the light absorption from UV to visible region. Also, the energy gap of MnTe NPs on B-doped metal oxide was determined ~1.27-1.30eV. The best power conversion efficiency (η) of 0.033% and 0.030% yielded from B-doped TiO2/MnTe(7) and B-doped ZnO/MnTe(9), respectively. The reduction in power conversion efficiency by 103% and 91% was due to the absence of boron doping into TiO2 and ZnO nanostructures, respectively.

  14. High density and taper-free boron doped Si{sub 1−x}Ge{sub x} nanowire via two-step growth process

    SciTech Connect

    Periwal, Priyanka; Salem, Bassem; Bassani, Franck; Baron, Thierry; Barnes, Jean-Paul

    2014-07-01

    The authors study Au catalyzed chemical vapor growth of Si{sub 1−x}Ge{sub x} alloyed nanowires in the presence of diborane, serving as a dopant precursor. Our experiments reveal that introduction of diborane has a significant effect on doping and morphology. Boron exposure poisons the Au catalyst surface, suppresses catalyst activity, and causes significantly tapered wires, as a result of conformal growth. The authors develop here a two-step method to obtain high density and taper-free boron doped Si{sub 1−x}Ge{sub x} alloy nanowires. The two-step process consists of: (1) growth of a small undoped Si{sub 1−x}Ge{sub x} section and (2) introduction of diborane to form a boron doped Si{sub 1−x}Ge{sub x} section. The catalyst preparation step remarkably influences wire yield, quality and morphology. The authors show that dopant-ratio influences wire resistivity and morphology. Resistivity for high boron doped Si{sub 1−x}Ge{sub x} nanowire is 6 mΩ-cm. Four probe measurements show that it is possible to dope Si{sub 1−x}Ge{sub x} alloy nanowires with diborane.

  15. A Drude model analysis of conductivity and free carriers in boron-doped diamond films and investigations of their internal stress and strain

    PubMed Central

    Manciu, Marian; Durrer, William G.; Salazar, Jessica G.; Lee, Kendall H.; Bennet, Kevin E.

    2014-01-01

    Boron-doped diamond (BDD) has seen a substantial increase in interest for use as electrode coating material for electrochemistry and studies of deep brain stimulation mechanism. In this study, we present an alternative method for determining important characteristics, including conductivity, carrier concentration, and time constant, of such material by the signature of Drude-like metallic behavior in the far-infrared (IR) spectral range. Unlike the direct determination of conductivity from the four-point probe method, using far-IR transmittance provides additional information, such as whether the incorporation of boron results in a large concentration of carriers or in inducing defects in the diamond lattice. The slightly doped to medium-doped BDD samples that were produced using chemical vapor deposition and analyzed in this work show conductivities ranging between 5.5 and 11 (Ω cm)−1. Different growth conditions demonstrate that increasing boron concentration results in an increase in the carrier concentration, with values between 7.2 × 1016 and 2.5 × 1017 carriers/cm3. Addition of boron, besides leading to a decrease in the resistivity, also resulted in a decrease in the time constant, limiting BDD conductivity. Investigations, by confocal Raman mapping, of the induced stress in the material due to interaction with the substrate or to the amount of doping are also presented and discussed. The induced tensile stress, which was distributed closer to the film-substrate interface decreased slightly with doping. PMID:25328245

  16. Oxidative synthesis of highly fluorescent boron/nitrogen co-doped carbon nanodots enabling detection of photosensitizer and carcinogenic dye.

    PubMed

    Jahan, Shanaz; Mansoor, Farrukh; Naz, Shagufta; Lei, Jianping; Kanwal, Shamsa

    2013-11-05

    Current research efforts have demonstrated the facile hydrothermal oxidative synthetic route to develop highly fluorescent boron/nitrogen co-doped carbon nanodots (CNDs). During this process, N-(4-hydroxyphenyl)glycine served as a source of N doping and a carbon precursor as well, while boric acid H3BO3 is used as an oxidizing agent in the N2 environment. Surface passivation through ultrasonic treatment of CNDs was performed to induce modifications by using various surface passivating agents. Polyethyleneimine (PEI) remarkably enhanced the fluorescence performance and monodispersity of polymerized carbon nanodots (P-CNDs) in aqueous phase with an enhanced quantum yield of 23.71%, along with an increase in size from ~3 nm to ~200 nm. For characterization of CNDs and P-CNDs, UV, infrared, photoluminescence, transmission electron microscopy, x-ray photoelectron spectra, and atomic force microscopy techniques were utilized. Application potentials of synthesized P-CNDs were developed via introduction of protoporphyrin (PPD, a photosensitizer) which has great doping affinity with polymer PEI to switch-off the fluorescence of P-CNDs, leading to the production of dye-doped nanoprobes. Fluorescence resonance energy transfer (FRET) was also observed during dye-doping, and PPD was detected with a limit of detection (LOD, 3σ) of 15 pM. The fluorescence recovery of this switched-off nanoprobe was made possible by using Sudan red III (carcinogenic dye), which was oxidized by PPD doped in P-CNDs. Sudan red III was detected in the concentration range of 9.9 pM-0.37 nM. Meanwhile, it was also confirmed that the dye-doped nanoprobe is highly selective and exceptionally sensitive to detect this carcinogenic agent in commercial products with a LOD (3σ) of 90 fM.

  17. CE with a boron-doped diamond electrode for trace detection of endocrine disruptors in water samples.

    PubMed

    Browne, Damien J; Zhou, Lin; Luong, John H T; Glennon, Jeremy D

    2013-07-01

    Off-line SPE and CE coupled with electrochemical detection have been used for the determination of bisphenol A (BPA), bisphenol F, 4-ethylphenol, and bisphenol A diglycidyl ether in bottled drinking water. The use of boron-doped diamond electrode as an electrochemical detector in amperometric mode that provides a favorable analytical performance for detecting these endocrine-disrupting compounds, such as lower noise levels, higher peak resolution with enhanced sensitivity, and improved resistance against electrode passivation. The oxidative electrochemical detection of the endocrine-disrupting compounds was accomplished by boron-doped diamond electrode poised at +1.4 V versus Ag/AgCl without electrode pretreatment. An off-line SPE procedure (Bond Elut® C18 SPE cartridge) was utilized to extract and preconcentrate the compounds prior to separation and detection. The minimum concentration detectable for all four compounds ranged from 0.01 to 0.06 μM, having S/N equal to three. After exposing the plastic bottle water container under sunlight for 7 days, the estimated concentration of BPA in the bottled drinking water was estimated to be 0.03 μM. This proposed approach has great potential for rapid and effective determination of BPA content present in water packaging of plastic bottles that have been exposed to sunlight for an extended period of time.

  18. High-pressure high-temperature phase diagram of gadolinium studied using a boron-doped heater anvil

    DOE PAGES

    Montgomery, J. M.; Samudrala, G. K.; Velisavljevic, N.; ...

    2016-04-07

    A boron-doped designer heater anvil is used in conjunction with powder x-ray diffraction to collect structural information on a sample of quasi-hydrostatically loaded gadolinium metal up to pressures above 8GPa and 600K. The heater anvil consists of a natural diamond anvil that has been surface modified with a homoepitaxially grown chemical-vapor-deposited layer of conducting boron-doped diamond, and is used as a DC heating element. Internally insulating both diamond anvils with sapphire support seats allows for heating and cooling of the high-pressure area on the order of a few tens of seconds. This device is then used to scan the phasemore » diagram of the sample by oscillating the temperature while continuously increasing the externally applied pressure and collecting in situ time-resolved powder diffraction images. In the pressure-temperature range covered in this experiment, the gadolinium sample is observed in its hcp, αSm, and dhcp phases. Under this temperature cycling, the hcp → αSm transition proceeds in discontinuous steps at points along the expected phase boundary. From these measurements (representing only one hour of synchrotron x-ray collection time), a single-experiment equation of state and phase diagram of each phase of gadolinium is presented for the range of 0–10GPa and 300–650K« less

  19. High-pressure high-temperature phase diagram of gadolinium studied using a boron-doped heater anvil

    SciTech Connect

    Montgomery, J. M.; Samudrala, G. K.; Velisavljevic, N.; Vohra, Y. K.

    2016-04-07

    A boron-doped designer heater anvil is used in conjunction with powder x-ray diffraction to collect structural information on a sample of quasi-hydrostatically loaded gadolinium metal up to pressures above 8GPa and 600K. The heater anvil consists of a natural diamond anvil that has been surface modified with a homoepitaxially grown chemical-vapor-deposited layer of conducting boron-doped diamond, and is used as a DC heating element. Internally insulating both diamond anvils with sapphire support seats allows for heating and cooling of the high-pressure area on the order of a few tens of seconds. This device is then used to scan the phase diagram of the sample by oscillating the temperature while continuously increasing the externally applied pressure and collecting in situ time-resolved powder diffraction images. In the pressure-temperature range covered in this experiment, the gadolinium sample is observed in its hcp, αSm, and dhcp phases. Under this temperature cycling, the hcp → αSm transition proceeds in discontinuous steps at points along the expected phase boundary. From these measurements (representing only one hour of synchrotron x-ray collection time), a single-experiment equation of state and phase diagram of each phase of gadolinium is presented for the range of 0–10GPa and 300–650K

  20. Green synthesis of nitrogen-doped graphitic carbon sheets with use of Prunus persica for supercapacitor applications

    NASA Astrophysics Data System (ADS)

    Atchudan, Raji; Edison, Thomas Nesakumar Jebakumar Immanuel; Perumal, Suguna; Lee, Yong Rok

    2017-01-01

    Nitrogen-doped graphitic carbon sheets (N-GCSs) were prepared from the extract of unripe Prunus persica fruit by a direct hydrothermal method. The synthesized N-GCSs were examined by high resolution transmission electron microscopy (HRTEM), nitrogen adsorption-desorption isotherms, X-ray diffraction (XRD), Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), and Fourier transform infrared (FT-IR) spectroscopy. HRTEM showed that the synthesized carbon sheets were graphitic with lattice fringes and an inter-layer distance of 0.36 nm. Doping with the nitrogen moiety present over the synthesized GCSs was confirmed by XPS, FT-IR spectroscopy, and energy dispersive X-ray spectroscopy elemental mapping. The fruit extract associated with hydrothermal-carbonization method is economical and eco-friendly with a single step process. The resulting carbon sheets could be modified and are promising candidates for nano-electronic applications, including supercapacitors. The synthesized N-GCSs-2 provided a high specific capacitance of 176 F g-1 at a current density of 0.1 A g-1. This electrode material has excellent cyclic stability, even after 2000 cycles of charge-discharge at a current density of 0.5 A g-1.

  1. In Situ Activation of Nitrogen-Doped Graphene Anchored on Graphite Foam for a High-Capacity Anode.

    PubMed

    Ji, Junyi; Liu, Jilei; Lai, Linfei; Zhao, Xin; Zhen, Yongda; Lin, Jianyi; Zhu, Yanwu; Ji, Hengxing; Zhang, Li Li; Ruoff, Rodney S

    2015-08-25

    We report the fabrication of a three-dimensional free-standing nitrogen-doped porous graphene/graphite foam by in situ activation of nitrogen-doped graphene on highly conductive graphite foam (GF). After in situ activation, intimate "sheet contact" was observed between the graphene sheets and the GF. The sheet contact produced by in situ activation is found to be superior to the "point contact" obtained by the traditional drop-casting method and facilitates electron transfer. Due to the intimate contact as well as the use of an ultralight GF current collector, the composite electrode delivers a gravimetric capacity of 642 mAh g(-1) and a volumetric capacity of 602 mAh cm(-3) with respect to the whole electrode mass and volume (including the active materials and the GF current collector). When normalized based on the mass of the active material, the composite electrode delivers a high specific capacity of up to 1687 mAh g(-1), which is superior to that of most graphene-based electrodes. Also, after ∼90 s charging, the anode delivers a capacity of about 100 mAh g(-1) (with respect to the total mass of the electrode), indicating its potential use in high-rate lithium-ion batteries.

  2. Graphite nanosheets doped with Fe, Ni, and N, synthesized in one step, and their unique magnetic performance

    NASA Astrophysics Data System (ADS)

    Xu, Zhanwei; Li, Hejun; Luo, Huijuan; Sun, Huihui; Zhang, Qinglin; Cao, Gaoxiang; Li, Kezhi

    2011-04-01

    Graphite nanosheets (GNs) doped with N, Fe, or Ni were synthesized by pyrolysis of metal tetrapyridinoporphyrazine (MPTpz, M=Fe 2+, and Ni 2+) and a mixture of MPTpzs in a chemical vapor deposition furnace. The products obtained were characterized by scanning and transmission electron microscopy, and X-ray photoelectron spectroscopy. The magnetic properties of the GNs obtained were investigated at room temperature using a vibrating sample magnetometer with an applied field of -10 000-10 000 Gs. The results show the GNs obtained are terrace-like and ultra-thin, with very high aspect ratio. Fe, Ni and N atoms have been doped to the GNs successfully. There are two types of N atom that are introduced into pure carbon systems: pyrinidic and graphitic N atoms. The GNs obtained exhibit ferromagnetic behavior at room temperature. Sample S1, obtained by pyrolysis of a mixture of MPTpzs (M=Fe 2+ and Ni 2+), have the highest coercivity force. The saturation magnetization ( Ms), remanent magnetization ( Mr), and coercivity ( Hc) values of sample S1 are 24.51 emu g -1, 3.95 emu g -1, and 207.34 Gs, respectively.

  3. Mineralization of salicylic acid in acidic aqueous medium by electrochemical advanced oxidation processes using platinum and boron-doped diamond as anode and cathodically generated hydrogen peroxide.

    PubMed

    Guinea, Elena; Arias, Conchita; Cabot, Pere Lluís; Garrido, José Antonio; Rodríguez, Rosa María; Centellas, Francesc; Brillas, Enric

    2008-01-01

    Solutions containing 164 mg L(-1) salicylic acid of pH 3.0 have been degraded by electrochemical advanced oxidation processes such as anodic oxidation, anodic oxidation with electrogenerated H(2)O(2), electro-Fenton, photoelectro-Fenton and solar photoelectro-Fenton at constant current density. Their oxidation power has been comparatively studied in a one-compartment cell with a Pt or boron-doped diamond (BDD) anode and a graphite or O(2)-diffusion cathode. In the three latter procedures, 0.5mM Fe(2+) is added to the solution to form hydroxyl radical (()OH) from Fenton's reaction between Fe(2+) and H(2)O(2) generated at the O(2)-diffusion cathode. Total mineralization is attained for all methods with BDD and for photoelectro-Fenton and solar photoelectro-Fenton with Pt. The poor decontamination achieved in anodic oxidation and electro-Fenton with Pt is explained by the slow removal of most pollutants by ()OH formed from water oxidation at the Pt anode in comparison to their quick destruction with ()OH produced at BDD. ()OH generated from Fenton's reaction oxidizes rapidly all aromatic pollutants, but it cannot destroy final Fe(III)-oxalate complexes. Solar photoelectro-Fenton treatments always yield quicker degradation rate due to the very fast photodecarboxylation of these complexes by UVA irradiation supplied by solar light. The effect of current density on the degradation rate, efficiency and energy cost of all methods is examined. The salicylic acid decay always follows a pseudo-first-order kinetics. 2,3-Dihydroxybenzoic, 2,5-dihydroxybenzoic, 2,6-dihydroxybenzoic, alpha-ketoglutaric, glycolic, glyoxylic, maleic, fumaric, malic, tartronic and oxalic acids are detected as oxidation products. A general reaction sequence for salicylic acid mineralization considering all these intermediates is proposed.

  4. Thermal evolution of high-purity and boron-doped sub-microcrystalline Ni{sub 3}Al produced by severe plastic deformation

    SciTech Connect

    Korznikov, A.V.; Korznikova, G.F.; Idrisova, S.R.; Dimitrov, O.; Dallas, J.P.; Faudot, F.; Valiev, R.Z.

    1999-09-08

    The influence of boron on the structural stability of sub-microcrystalline Ni{sub 3}Al intermetallic compounds was investigated by comparing a high-purity material with a boron-doped (0.1 wt%) compound. The nanocrystalline structure was obtained by severe shear deformation under quasi-hydrostatic pressure. Residual electrical resistivity, Vickers microhardness, X-ray diffraction and transmission electron microscopy were used to characterize the material evolution during thermal treatments in the temperature range 293--1,313 K. After severe deformation the materials were disordered, with a small crystallite size of about 20 nm, similar in both materials. During isochronal anneals, the evolution of the microstructure, the long-range ordering and the recovery of the investigated properties took place at higher temperatures in the boron-doped compound, i.e. the thermal stability of the cold-worked structure was higher.

  5. Gas-assisted growth of boron-doped nickel nanotube arrays: rapid synthesis, growth mechanisms, tunable magnetic properties, and super-efficient reduction of 4-nitrophenol.

    PubMed

    Li, Xiang-Zi; Wu, Kong-Lin; Ye, Yin; Wei, Xian-Wen

    2013-05-07

    Highly ordered noncrystalline boron-doped nickel nanotube arrays are rapidly synthesized within 150 s by template-based electroless deposition. The as-prepared nanotubes have tunable magnetic properties and exhibit super efficient catalytic activity (∼70 s) for the reduction of 4-nitrophenol.

  6. Dissolution Mediated Boron and Carbon Storage during Exhumation of HP Metapelites: Examples from New Hampshire Tourmaline-Graphite Intergrowths

    NASA Astrophysics Data System (ADS)

    Galvez, M.; Rumble, D.; Cody, G. D.; Sverjensky, D. A.

    2013-12-01

    The dynamic of light elements (e.g. C,B) in subduction zones is a complex process ultimately governed by variables such as P, T, fH2 and pH. Interface phenomena at scales from the outcrop to intergranular surfaces play key chemical and mechanical roles on this dynamic (e.g. Galvez et al. 2013). We report here a petrological study of hydrated borosilicate tourmaline intergrown with graphite formed at the contact between igneous intrusives and high grade micaschists in New Hampshire graphite deposits (Rumble and Hoering, 1986). Our study includes Raman scattering, SEM, microprobe analysis and thermodynamic modeling, focusing on the Franklin Pierce and Walpole outcrops. Both localities experienced HP-HT metamorphism during the Acadian orogeny as well as complex metasomatic process during exhumation. The tourmaline-graphite intergrowths are structurally localized at and around contacts between an aplite sill and micaschists - biotite-muscovite-garnet-sillimanite-plagioclase-quartz-ilmenite - (Franklin Pierce), or along shear zones (Walpole) in veins. Tourmalines are dravitic in composition (i.e. Na, Mg rich with minor vacancy and Li content 0.2/0.1 a.p.f.u) and contain multiple primary tubular mixed fluid-solid inclusions containing graphite, quartz and gaseous CO2 and CH4. Sharp optical and compositional radial zonations are observed from core to rim in sections along and perpendicular to the c-axis. Blue-green cores are enriched in Mg and Ca (1.5/0.1 a.p.f.u respectively) whereas rims are enriched in Fe, Na and Ti (0.9/0.6/0.1 a.p.f.u respectively). Alternative interpretations in terms of sector zoning or compositional variability of the mineralizing fluid will be discussed. The carbonaceous material (CM) occurs primarily as flakes directly replacing biotite present in wall rocks. The structural ordering of CM, of unambiguous abiotic origin, reveals a material possessing the 3 dimensional structure of hexagonal graphite. Our results are critically compared to

  7. Effect of doping by boron, carbon, and nitrogen atoms on the magnetic and photocatalytic properties of anatase

    NASA Astrophysics Data System (ADS)

    Zainullina, V. M.; Zhukov, V. P.; Korotin, M. A.; Polyakov, E. V.

    2011-07-01

    The effect of doping of titanium dioxide with the anatase structure by boron, carbon, and nitrogen atoms on the magnetic and optical properties and the electronic spectrum of this compound has been investigated using the ab initio tight-binding linear muffin-tin orbital (TB-LMTO) band-structure method in the local spin density approximation explicitly including Coulomb correlations (LSDA + U) in combination with the semiempirical extended Hückel theory (EHT) method. The LSDA + U calculations of the electronic structure, the imaginary part of the dielectric function, the total magnetic moments, and the magnetic moments at the impurity atoms have been carried out. The diagrams of the molecular orbitals of the clusters Ti3 X ( X = B, C, N) have been calculated and the pseudo-space images of the molecular orbitals of the clusters have been constructed. The effect of doping on the nature and origin of photocatalytic activity in the visible spectral range and the specific features of the generation of ferromagnetic interactions in doped anatase have been discussed based on the analysis of the obtained data. It has been shown that, in the sequence TiO2 - y N y → TiO2 - y C y → TiO2 - y B y ( y = 1/16), the photocatalytic activity can increase with the generation of electronic excitations with the participation of impurity bands. The calculated magnetic moments for boron and nitrogen atoms are equal to 1 μB, whereas the impurity carbon atoms are nonmagnetic.

  8. Constructing 2D porous graphitic C3 N4 nanosheets/nitrogen-doped graphene/layered MoS2 ternary nanojunction with enhanced photoelectrochemical activity.

    PubMed

    Hou, Yang; Wen, Zhenhai; Cui, Shumao; Guo, Xiaoru; Chen, Junhong

    2013-11-20

    A 2D porous graphitic C3 N4 nanosheets/nitrogen-doped graphene/layered MoS2 ternary nanojunction is synthesized using a simple pyrolysis process followed by a hydrothermal treatment. The 2D ternary nanojunction exhibits significantly enhanced photoelectrochemical and photocatalytic activities due to the large contact area, efficient light absorption, and rapid charge separation and transport.

  9. Studying the effects of the configuration of doped Al atoms on the conductive properties of boron nitride nanotube using density functional theory

    NASA Astrophysics Data System (ADS)

    Tavangar, Zahra; Hamadanian, Masood; Basharnavaz, Hadi

    2017-02-01

    In this paper, we study the effects of the configuration of two Al atoms doped into the unit cell of (7, 0) BNNTs, on their structural and electronic properties in solid state using density functional theory methods. Also, all possible configurations for Al double doped (7, 0) BNNT were investigated. The results showed that with Al doping, band gap decreased. Furthermore, an impurity state appears near the Fermi level when two Al atoms replace two boron atoms of adjacent layers. Contour plots of charge density distribution showed a protuberance surrounding N and B atoms adjacent to the substitute Al atoms.

  10. One-Pot Synthesis of Hydrophilic and Hydrophobic N-Doped Graphene Quantum Dots via Exfoliating and Disintegrating Graphite Flakes

    NASA Astrophysics Data System (ADS)

    Kuo, Na-Jung; Chen, Yu-Syuan; Wu, Chien-Wei; Huang, Chun-Yuan; Chan, Yang-Hsiang; Chen, I.-Wen Peter

    2016-07-01

    Graphene quantum dots (GQDs) have drawn tremendous attention on account of their numerous alluring properties and a wide range of application potentials. Here, we report that hydrophilic and hydrophobic N-doped GQDs can be prepared via exfoliating and disintegrating graphite flakes. Various spectroscopic characterizations including TEM, AFM, FTIR, PL, XPS, and Raman spectroscopy demonstrated that the hydrophilic N-doped GQDs (IN-GQDs) and the hydrophobic N-doped GQDs (ON-GQDs) are mono-layered and multi-layered, respectively. In terms of practical aspects, the supercapacitor of an ON-GQDs/SWCNTs composite paper electrode was fabricated and exhibited an areal capacitance of 114 mF/cm2, which is more than 250% higher than the best reported value to date for a GQDs/carbon nanotube hybrid composite. For IN-GQDs applications, bio-memristor devices of IN-GQDs-albumen combination exhibited on/off current ratios in excess of 104 accompanied by stable switching endurance of over 250 cycles. The resistance stability of the high resistance state and the low resistance state could be maintained for over 104 s. Moreover, the IN-GQDs exhibited a superior quantum yield (34%), excellent stability of cellular imaging, and no cytotoxicity. Hence, the solution-based method for synchronized production of IN-GQDs and ON-GQDs is a facile and processable route that will bring GQDs-based electronics and composites closer to actualization.

  11. One-Pot Synthesis of Hydrophilic and Hydrophobic N-Doped Graphene Quantum Dots via Exfoliating and Disintegrating Graphite Flakes

    PubMed Central

    Kuo, Na-Jung; Chen, Yu-Syuan; Wu, Chien-Wei; Huang, Chun-Yuan; Chan, Yang-Hsiang; Chen, I-Wen Peter

    2016-01-01

    Graphene quantum dots (GQDs) have drawn tremendous attention on account of their numerous alluring properties and a wide range of application potentials. Here, we report that hydrophilic and hydrophobic N-doped GQDs can be prepared via exfoliating and disintegrating graphite flakes. Various spectroscopic characterizations including TEM, AFM, FTIR, PL, XPS, and Raman spectroscopy demonstrated that the hydrophilic N-doped GQDs (IN-GQDs) and the hydrophobic N-doped GQDs (ON-GQDs) are mono-layered and multi-layered, respectively. In terms of practical aspects, the supercapacitor of an ON-GQDs/SWCNTs composite paper electrode was fabricated and exhibited an areal capacitance of 114 mF/cm2, which is more than 250% higher than the best reported value to date for a GQDs/carbon nanotube hybrid composite. For IN-GQDs applications, bio-memristor devices of IN-GQDs-albumen combination exhibited on/off current ratios in excess of 104 accompanied by stable switching endurance of over 250 cycles. The resistance stability of the high resistance state and the low resistance state could be maintained for over 104 s. Moreover, the IN-GQDs exhibited a superior quantum yield (34%), excellent stability of cellular imaging, and no cytotoxicity. Hence, the solution-based method for synchronized production of IN-GQDs and ON-GQDs is a facile and processable route that will bring GQDs-based electronics and composites closer to actualization. PMID:27452118

  12. A simple fabrication for sulfur doped graphitic carbon nitride porous rods with excellent photocatalytic activity degrading RhB dye

    NASA Astrophysics Data System (ADS)

    Fan, Qianjing; Liu, Jianjun; Yu, Yingchun; Zuo, Shengli; Li, Baoshan

    2017-01-01

    Constructing special nanostructures with large surface areas and tuning the band gap by element doping are efficient strategies to enhance the photocatalytic activity of semiconductor materials. Here we combined both strategies in one material to form sulfur-doped graphitic carbon nitride porous rods (S-pg-C3N4) in one pot by simply pyrolysis of the melamine-trithiocyanuric acid complex with different temperatures. The samples were characterized by XRD, FT-IR, and elemental analysis; nitrogen adsorption isotherms, SEM and TEM images; and UV-vis DRS and photoluminescence spectra. Characterizations showed that S-pg-C3N4 possessed porous rod structure with a larger surface area (20-52 m2/g) than that of bulk g-C3N4, and the surface area of the S-pg-C3N4 samples increased with the increase of heating temperature. Meanwhile, the trace sulfur remained in the framework of g-C3N4 formed sulfur doped g-C3N4, and the visible light absorption edge of the S-pg-C3N4 was extended, corresponding to a narrowed band gap. As a result, the S-pg-C3N4 samples exhibited an enhanced physical adsorption and photocatalytic activity in the degradation of Rhodamine B dye under visible light.

  13. Amorphous boron-doped sodium titanates hydrates: Efficient and reusable adsorbents for the removal of Pb(2+) from water.

    PubMed

    di Bitonto, Luigi; Volpe, Angela; Pagano, Michele; Bagnuolo, Giuseppe; Mascolo, Giuseppe; La Parola, Valeria; Di Leo, Paola; Pastore, Carlo

    2017-02-15

    Amorphous titanium hydroxide and boron-doped (B-doped) sodium titanates hydrates were synthetized and used as adsorbents for the removal of Pb(2+) from water. The use of sodium borohydride (NaBH4) and titanium(IV) isopropoxide (TTIP) as precursors permits a very easy synthesis of B-doped adsorbents at 298K. The new adsorbent materials were first chemically characterized (XRD, XPS, SEM, DRIFT and elemental analysis) and then tested in Pb(2+) adsorption batch experiments, in order to define kinetics and equilibrium studies. The nature of interaction between such sorbent materials and Pb(2+) was also well defined: besides a pure adsorption due to hydroxyl interaction functionalities, there is also an ionic exchange between Pb(2+) and sodium ions even working at pH 4.4. Langmuir model presented the best fitting with a maximum adsorption capacity up to 385mg/g. The effect of solution pH and common ions (i.e. Na(+), Ca(2+) and Mg(2+)) onto Pb(2+) sorption were also investigated. Finally, recovery was positively conducted using EDTA. Very efficient adsorption (>99.9%) was verified even using tap water spiked with traces of Pb(2+) (50ppb).

  14. Nitrogen- and boron-co-doped core-shell carbon nanoparticles as efficient metal-free catalysts for oxygen reduction reactions in microbial fuel cells

    NASA Astrophysics Data System (ADS)

    Zhong, Shengkui; Zhou, Lihua; Wu, Ling; Tang, Lianfeng; He, Qiyi; Ahmed, Jalal

    2014-12-01

    The most severe bottleneck hindering the widespread application of fuel cell technologies is the difficulty in obtaining an inexpensive and abundant oxygen reduction reaction (ORR) catalyst. The concept of a heteroatom-doped carbon-based metal-free catalyst has recently attracted interest. In this study, a metal-free carbon nanoparticles-based catalyst hybridized with dual nitrogen and boron components was synthesized to catalyze the ORR in microbial fuel cells (MFCs). Multiple physical and chemical characterizations confirmed that the synthetic method enabled the incorporation of both nitrogen and boron dopants. The electrochemical measurements indicated that the co-existence of nitrogen and boron could enhance the ORR kinetics by reducing the overpotential and increasing the current density. The results from the kinetic studies indicated that the nitrogen and boron induced an oxygen adsorption mechanism and a four-electron-dominated reaction pathway for the as-prepared catalyst that was very similar to those induced by Pt/C. The MFC results showed that a maximum power density of ∼642 mW m-2 was obtained using the as-prepared catalyst, which is comparable to that obtained using expensive Pt catalyst. The prepared nitrogen- and boron-co-doped carbon nanoparticles might be an alternative cathode catalyst for MFC applications if large-scale applications and price are considered.

  15. Luminescence properties of boron and nitrogen doped graphene quantum dots prepared from arc-discharge-generated doped graphene samples

    NASA Astrophysics Data System (ADS)

    Dey, Sunita; Govindaraj, A.; Biswas, Kanishka; Rao, C. N. R.

    2014-03-01

    Substitution of heteroatoms in graphene is known to tailor its band gap. Another approach to alter the band gap of graphene is to create zero-dimensional graphene quantum dots (GQDs). Here we present the synthesis and photoluminescence properties of B-doped graphene quantum dots (B-GQDs) for the first time, having prepared the B-GQDs by chemical scissoring of B-doped graphene generated by arc-discharge in gas phase. We compare the photoluminescence properties of B-GQDs with nitrogen-doped GQDs and pristine GQDs. Besides, excitation wavelength independent PL emission, excellent upconversion of PL emission is observed in GQDs as well as B- and N-doped GQDs.

  16. Enhanced Growth and Osteogenic Differentiation of Human Osteoblast-Like Cells on Boron-Doped Nanocrystalline Diamond Thin Films

    PubMed Central

    Grausova, Lubica; Kromka, Alexander; Burdikova, Zuzana; Eckhardt, Adam; Rezek, Bohuslav; Vacik, Jiri; Haenen, Ken; Lisa, Vera; Bacakova, Lucie

    2011-01-01

    Intrinsic nanocrystalline diamond (NCD) films have been proven to be promising substrates for the adhesion, growth and osteogenic differentiation of bone-derived cells. To understand the role of various degrees of doping (semiconducting to metallic-like), the NCD films were deposited on silicon substrates by a microwave plasma-enhanced CVD process and their boron doping was achieved by adding trimethylboron to the CH4:H2 gas mixture, the B∶C ratio was 133, 1000 and 6700 ppm. The room temperature electrical resistivity of the films decreased from >10 MΩ (undoped films) to 55 kΩ, 0.6 kΩ, and 0.3 kΩ (doped films with 133, 1000 and 6700 ppm of B, respectively). The increase in the number of human osteoblast-like MG 63 cells in 7-day-old cultures on NCD films was most apparent on the NCD films doped with 133 and 1000 ppm of B (153,000±14,000 and 152,000±10,000 cells/cm2, respectively, compared to 113,000±10,000 cells/cm2 on undoped NCD films). As measured by ELISA per mg of total protein, the cells on NCD with 133 and 1000 ppm of B also contained the highest concentrations of collagen I and alkaline phosphatase, respectively. On the NCD films with 6700 ppm of B, the cells contained the highest concentration of focal adhesion protein vinculin, and the highest amount of collagen I was adsorbed. The concentration of osteocalcin also increased with increasing level of B doping. The cell viability on all tested NCD films was almost 100%. Measurements of the concentration of ICAM-1, i.e. an immunoglobuline adhesion molecule binding inflammatory cells, suggested that the cells on the NCD films did not undergo significant immune activation. Thus, the potential of NCD films for bone tissue regeneration can be further enhanced and tailored by B doping and that B doping up to metallic-like levels is not detrimental for cells. PMID:21695172

  17. Enhanced selectivity of boron doped diamond electrodes for the detection of dopamine and ascorbic acid by increasing the film thickness

    NASA Astrophysics Data System (ADS)

    Qi, Yao; Long, Hangyu; Ma, Li; Wei, Quiping; Li, Site; Yu, Zhiming; Hu, Jingyuan; Liu, Peizhi; Wang, Yijia; Meng, Lingcong

    2016-12-01

    In this paper, boron doped diamond (BDD) with different thickness were prepared by hot filament chemical vapor deposition. The performance of BDD electrodes for detecting dopamine (DA) and ascorbic acid (AA) were investigated. Scanning electron microscopy and Raman spectra reveal the grain size increases and the film quality improves with the increase of film thickness. Electrochemical test show that the transfer coefficient in [Fe3 (CN) 6]3-/4- redox system increases with the increase of the film thickness. The results of selectivity and sensitivity for DA mixed with AA detection show that 8h-BDD and 12h-BDD electrodes possess well selective separated oxidation peaks of DA and AA, and the 12h-BDD electrode exhibits optimal sensitivity until the DA concentration drops to 1 μ M.

  18. Modification of the surface morphology of the silicon substrate for boron-doped diamond electrodes in electrochemical wastewater treatment applications

    NASA Astrophysics Data System (ADS)

    Bak, Ji-Yoon; Lee, Choong-Hyun; Kim, Jung-Do; Lim, Dae-Soon

    2016-01-01

    For electrochemical wastewater treatment applications, textured boron-doped diamond (BDD) electrodes were fabricated by using a simple and cost-effective etching process. On the basis of the surface area measurement, the etching time was optimized in order to achieve higher electrochemical wastewater treatment performance. The surface structure, electrochemical properties, and electrochemical oxidation performance of the electrodes were characterized by using Raman spectroscopy and atomic force microscopy, in addition to electrochemical techniques. The textured BDD electrode demonstrated a dense and large surface area with no change in the film's properties. The effective surface area of the textured BDD electrode was approximately twice as large as that of the planar BDD electrode. The electrochemical results clearly demonstrate that the enhanced surface area of the BDD electrode achieves a higher current efficiency and much lower energy consumption in the electrochemical oxidation of methyl-orange.

  19. In vivo pH monitoring using boron doped diamond microelectrode and silver needles: application to stomach disorder diagnosis.

    PubMed

    Fierro, Stéphane; Seishima, Ryo; Nagano, Osamu; Saya, Hideyuki; Einaga, Yasuaki

    2013-11-19

    This study presents the in vivo electrochemical monitoring of pH using boron doped diamond (BDD) microelectrode and silver needles for potential application in medical diagnosis. Accurate calibration curve for pH determination were obtained through in vitro electrochemical measurements. The increase induced in stomach pH by treatment with pantoprazole was used to demonstrate that it is possible to monitor the pH in vivo using the simple and noninvasive system proposed herein. Using the results of the in vivo and in vitro experiments, a quantitative analysis of the increase in stomach pH is also presented. It is proposed that the catheter-free pH monitoring system presented in this study could be potentially employed in any biological environment.

  20. Chemometric study on the electrochemical incineration of nitrilotriacetic acid using platinum and boron-doped diamond anode.

    PubMed

    Zhang, Chunyong; He, Zhenzhu; Wu, Jingyu; Fu, Degang

    2015-07-01

    This study investigated the electrochemical incineration of nitrilotriacetic acid (NTA) at boron-doped diamond (BDD) and platinum (Pt) anodes. Trials were performed in the presence of sulfate electrolyte media under recirculation mode. The parameters that influence the degradation efficiency were investigated, including applied current density, flow rate, supporting electrolyte concentration and reaction time. To reduce the number of experiments, the system had been managed under chemometric technique named Doehlert matrix. As a consequence, the mineralization of NTA demonstrated similar behavior upon operating parameters on these two anodes. Further kinetic study indicated that the degradations followed pseudo-first-order reactions for both BDD and Pt anodes, and the reaction rate constant of the former was found to be higher than that of the latter. Such difference could be interpreted by results from fractal analysis. In addition, a reaction sequence for NTA mineralization considering all the detected intermediates was also proposed.

  1. Voltammetric determination of mixtures of caffeine and chlorogenic acid in beverage samples using a boron-doped diamond electrode.

    PubMed

    Yardım, Yavuz; Keskin, Ertugrul; Şentürk, Zühre

    2013-11-15

    Herein, a boron-doped diamond (BDD) electrode that is anodically pretreated was used for the simultaneous determination of caffeine (CAF) and chlorogenic acid (CGA) by cyclic and adsorptive stripping voltammetry. The dependence of peak current and potential on pH, scan rate, accumulation parameters and other experimental variables were studied. By using square-wave stripping mode after 60 s accumulation under open-circuit voltage, the BDD electrode was able to separate the oxidation peak potentials of CAF and CGA present in binary mixtures by about 0.4V in Britton-Robinson buffer at pH 1.0. The limits of detection were 0.107 µg mL(-1) (5.51×10(-7) M) for CAF, and 0.448 µg mL(-1) (1.26×10(-6) M) for CGA. The practical applicability of this methodology was tested in commercially available beverage samples.

  2. Enhanced field emission characteristics of boron doped diamond films grown by microwave plasma assisted chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Koinkar, Pankaj M.; Patil, Sandip S.; Kim, Tae-Gyu; Yonekura, Daisuke; More, Mahendra A.; Joag, Dilip S.; Murakami, Ri-ichi

    2011-01-01

    Boron doped diamond films were synthesized on silicon substrates by microwave plasma chemical vapor deposition (MPCVD) technique. The effect of B 2O 3 concentration varied from 1000 to 5000 ppm on the field emission characteristics was examined. The surface morphology and quality of films were characterized by scanning electron microscope (SEM) and Raman spectroscopy. The surface morphology obtained by SEM showed variation from facetted microcrystal covered with nanometric grains to cauliflower of nanocrystalline diamond (NCD) particles with increasing B 2O 3 concentration. The Raman spectra confirm the formation of NCD films. The field emission properties of NCD films were observed to improve upon increasing boron concentration. The values of the onset field and threshold field are observed to be as low as 0.36 and 0.08 V/μm, respectively. The field emission current stability investigated at the preset value of ˜1 μA is observed to be good, in each case. The enhanced field emission properties are attributed to the better electrical conductivity coupled with the nanometric features of the diamond films.

  3. Ni-Mo Nanocatalysts on N-Doped Graphite Nanotubes for Highly Efficient Electrochemical Hydrogen Evolution in Acid.

    PubMed

    Wang, Teng; Guo, Yanru; Zhou, Zhenxing; Chang, Xinghua; Zheng, Jie; Li, Xingguo

    2016-11-22

    Developing noble-metal-free catalysts for electrochemical hydrogen evolution reactions (HER) with superior stability in acid is of critical importance for large-scale, low-cost hydrogen production from water electrolysis. Herein, we report a highly efficient and stable noble-metal-free HER catalyst, which is composed of Ni and Mo2C nanocrystals supported on N-doped graphite nanotubes. This catalyst shows very low overpotential (65 mV in 0.5 M H2SO4 at a current density of 10 mA cm(-2) with a Tafel plot of 67 mV/dec) and good stability for HER in acidic electrolyte, which is a promising noble-metal-free HER catalyst.

  4. High-rate and ultralong cycle-life LiFePO4 nanocrystals coated by boron-doped carbon as positive electrode for lithium-ion batteries

    NASA Astrophysics Data System (ADS)

    Feng, Jinpeng; Wang, Youlan

    2016-12-01

    An evolutionary modification approach, boron-doped carbon coating, has been used to improve the electrochemical performances of positive electrodes for lithium-ion batteries, and demonstrates apparent and significant modification effects. In this study, the boron-doped carbon coating is firstly adopted and used to decorate the performance of LiFePO4. The obtained composite exhibits a unique core-shell structure with an average diameter of 140 nm and a 4 nm thick boron-doped carbon shell that uniformly encapsulates the core. Owing to the boron element which could induce high amount of defects in the carbon, the electronic conductivity of LiFePO4 is greatly ameliorated. Thus, the boron-doped composite shows superior rate capability and cycle stability than the undoped sample. For instance, the reversible specific capacity of LiFePO4@B0.4-C can reach 164.1 mAh g-1 at 0.1C, which is approximately 96.5% of the theoretical capacity (170 mAh g-1). Even at high rate of 10C, it still shows a high specific capacity of 126.8 mAh g-1 and can be maintained at 124.5 mAh g-1 after 100 cycles with capacity retention ratio of about 98.2%. This outstanding Li-storage property enable the present design strategy to open up the possibility of fabricating the LiFePO4@B-C composite for high-performance lithium-ion batteries.

  5. Molecular dynamics investigation of separation of hydrogen sulfide from acidic gas mixtures inside metal-doped graphite micropores.

    PubMed

    Huang, Pei-Hsing

    2015-09-21

    The separation of poisonous compounds from various process fluids has long been highly intractable, motivating the present study on the dynamic separation of H2S in acidic-gas-mixture-filled micropores. The molecular dynamics approach, coupled with the isothermal-isochoric ensemble, was used to model the molecular interactions and adsorption of H2S/CO2/CO/H2O mixtures inside metal-doped graphite slits. Due to the difference in the adsorption characteristics between the two distinct adsorbent materials, the metal dopant in the graphitic micropores leads to competitive adsorption, i.e. the Au and graphite walls compete to capture free adsorbates. The effects of competitive adsorption, coupled with changes in the gas temperature, concentration, constituent ratio and slit width on the constituent separation of mixtures were systematically studied. The molecule-wall binding energies calculated in this work (those of H2S, H2O and CO on Au walls and those of H2O, CO and CO2 on graphite walls) show good agreement with those obtained using density functional theory (DFT) and experimental results. The z-directional self-diffusivities (Dz) for adsorbates inside the slit ranged from 10(-9) to 10(-7) m(2) s(-1) as the temperature was increased from 10 to 500 K. The values are comparable with those for a typical microporous fluid (10(-8)-10(-9) m(2) s(-1) in a condensed phase and 10(-6)-10(-7) m(2) s(-1) in the gaseous state). The formation of H-bonding networks and hydrates of H2S is disadvantageous for the separation of mixtures. The results indicate that H2S can be efficiently separated from acidic gas mixtures onto the Au(111) surface by (i) reducing the mole fraction of H2S and H2O in the mixtures, (ii) raising the gas temperature to the high temperature limit (≥400 K), and (iii) lowering the slit width to below the threshold dimension (≤23.26 Å).

  6. Direct Transformation from Graphitic C3N4 to Nitrogen-Doped Graphene: An Efficient Metal-Free Electrocatalyst for Oxygen Reduction Reaction.

    PubMed

    Li, Jiajie; Zhang, Yumin; Zhang, Xinghong; Han, Jiecai; Wang, Yi; Gu, Lin; Zhang, Zhihua; Wang, Xianjie; Jian, Jikang; Xu, Ping; Song, Bo

    2015-09-09

    Carbon-based nanomaterials provide an attractive perspective to replace precious Pt-based electrocatalysts for oxygen reduction reaction (ORR) to enhance the practical applications of fuel cells. Herein, we demonstrate a one-pot direct transformation from graphitic-phase C3N4 (g-C3N4) to nitrogen-doped graphene. g-C3N4, containing only C and N elements, acts as a self-sacrificing template to construct the framework of nitrogen-doped graphene. The relative contents of graphitic and pyridinic-N can be well-tuned by the controlled annealing process. The resulting nitrogen-doped graphene materials show excellent electrocatalytic activity toward ORR, and much enhanced durability and tolerance to methanol in contrast to the conventional Pt/C electrocatalyst in alkaline medium. It is determined that a higher content of N does not necessarily lead to enhanced electrocatalytic activity; rather, at a relatively low N content and a high ratio of graphitic-N/pyridinic-N, the nitrogen-doped graphene obtained by annealing at 900 °C (NGA900) provides the most promising activity for ORR. This study may provide further useful insights on the nature of ORR catalysis of carbon-based materials.

  7. Nitrogen-doped graphene by all-solid-state ball-milling graphite with urea as a high-power lithium ion battery anode

    NASA Astrophysics Data System (ADS)

    Liu, Chao; Liu, Xingang; Tan, Jiang; Wang, Qingfu; Wen, Hao; Zhang, Chuhong

    2017-02-01

    Nitrogen-doped graphene nanosheets (NGNS) are prepared by a novel mechanochemical method via all-solid-state ball-milling graphite with urea. The ball-milling process does not only successfully exfoliate the graphite into multi-layer (<10 layers) graphene nanosheets, but at the same time, enables the N element to be doped onto the graphene. Urea, acting as a new solid doping and assist-grinding agents, has the advantages of low cost and good water solubility that can simplify the fabrication process. The as-prepared NGNS are investigated in detail by XRD, SEM, HRTEM, TGA, XPS and Raman spectroscopy. The doping nitrogens are around 3.15% and dominated (>94%) by pyrindic-N and pyrrolic-N which facilitates the NGNS with enhanced electronic conductivity and Li-ion storage capability. For the first time, we demonstrate that the all-solid-state prepared NGNS exhibits, especially at high currents, enhanced cycling stability and rate capability as Lithium ion battery (LIB) anode active material when compared to pristine graphite and undoped graphene in half-cell configuration. The method presented in this article may provide a simple, clean, economical and scalable strategy for preparation of NGNS as a feasible and promising anode material for LIBs.

  8. Facile synthesis of phosphorus doped graphitic carbon nitride polymers with enhanced visible-light photocatalytic activity

    SciTech Connect

    Zhang, Ligang; Chen, Xiufang; Guan, Jing; Jiang, Yijun; Hou, Tonggang; Mu, Xindong

    2013-09-01

    Graphical abstract: - Highlights: • P-doped g-C{sub 3}N{sub 4} has been prepared by a one-pot green synthetic approach. • The incorporation of P resulted in favorable textural and electronic properties. • Doping with P enhanced the visible-light photocatalytic activity of g-C{sub 3}N{sub 4}. • A postannealing treatment further enhanced the activity of P-doped g-C{sub 3}N{sub 4}. • Photogenerated holes were the main species responsible for the activity. - Abstract: Phosphorus-doped carbon nitride materials were prepared by a one-pot green synthetic approach using dicyandiamide monomer and a phosphorus containing ionic liquid as precursors. The as-prepared materials were subjected to several characterizations and investigated as metal-free photocatalysts for the degradation of organic pollutants (dyes like Rhodamine B, Methyl orange) in aqueous solution under visible light. Results revealed that phosphorus-doped carbon nitride have a higher photocatalytic activity for decomposing Rhodamine B and Methyl orange in aqueous solution than undoped g-C{sub 3}N{sub 4}, which was attributed to the favorable textural, optical and electronic properties caused by doping with phosphorus heteroatoms into carbon nitride host. A facile postannealing treatment further improved the activity of the photocatalytic system, due to the higher surface area and smaller structural size in the postcalcined catalysts. The phosphorus-doped carbon nitride showed high visible-light photocatalytic activity, making them promising materials for a wide range of potential applications in photochemistry.

  9. Thermodynamical and thermoelectric properties of boron doped YPd3 and YRh3

    NASA Astrophysics Data System (ADS)

    Dwivedi, Shalini; Sharma, Ramesh; Sharma, Yamini

    2016-05-01

    The structural, electronic, thermal, and optical properties of borides of cubic non-magnetic YX3 (X=Rh, Pd) compounds and their borides which crystallize in the AuCu3 structure have been studied using the density functional theory (DFT). The flat bands in the vicinity of EF which are associated with superconductivity appear in YPd3 and YRh3 band structures. However, the B s-states enhance the flat band only in YRh3B. The optical properties clearly show that boron insertion modifies the absorption and transmittance. The YX3 alloys and their borides exhibit valuable changes in the thermopower and ZT. It is observed that the properties of the Y-X intermetallics change significantly for the Y-Rh and Y-Pd alloys and the presence of single boron atom modifies the properties to a great extent.

  10. Magnetization Study of Sulfur-doped Graphitic Nano-platelets and Single Walled Carbon Nanotubes

    NASA Astrophysics Data System (ADS)

    Zhu, J.; Oliveira, L.; Podila, R.; Neeleshwar, S.; Chen, Y. Y.; He, J.; Skove, M.; Rao, A. M.; Department of Physics and Astronomy, Clemson University Collaboration; Institute of Physics, Academia Sinica Collaboration

    2013-03-01

    Recently we investigated the magnetic behavior of as-prepared and sulfur doped chemically exfoliated graphene nano-platelets (GNPs) and single walled carbon nanotubes (SWCNTs). The doping was achieved by annealing desired carbon nanostructures with 0, 1.0, 1.5 and 3 at% sulfur in an evacuated quartz tube at 1000 °C for 1 day, followed by multiple rinsing in alcohol and drying in vacuum to remove excess sulfur. The isothermal M vs. H as well as the temperature-dependent M vs. T measurements were obtained using a vibrating sample magnetometer. We found that sulfur doping drastically changes the magnetic behavior of the as-prepared samples (both SWCNTs and GNPs). The results of zero-field-cooling (ZFC) and field-cooling (FC) in M vs. T measurements indicated the existence of large amount of coupled super-paramagnetic domains, along with antiferromagnetic domains. The saturation magnetization decreased in S doped GNPs, while a contrasting trend was observed in S doped SWCNTs. The role of edge states and structural defects in carbon nanostructures in the observed magnetic properties will be discussed.

  11. Improvement of epitaxial channel quality on heavily arsenic- and boron-doped Si surfaces and impact on performance of tunnel field-effect transistors

    NASA Astrophysics Data System (ADS)

    Morita, Yukinori; Mori, Takahiro; Migita, Shinji; Mizubayashi, Wataru; Fukuda, Koichi; Matsukawa, Takashi; Endo, Kazuhiko; O'uchi, Shin-ichi; Liu, Yongxun; Masahara, Meishoku; Ota, Hiroyuki

    2015-11-01

    We evaluate the impact of tunnel junction quality on the performance of tunnel field-effect transistors (TFETs). The interface between epitaxially grown channel and source surface was used as tunnel junctions. Performing a sequential surface cleaning procedure prior to epitaxial channel growth for heavily arsenic- and boron-doped Si surfaces improved the interface quality both for p- and n-TFETs. Simultaneously, the subthreshold swing (SS) values of the TFETs improved step-by-step with interface quality.

  12. An intensified π-hole in beryllium-doped boron nitride meshes: its determinant role in CO2 conversion into hydrocarbon fuels.

    PubMed

    Azofra, Luis Miguel; MacFarlane, Douglas R; Sun, Chenghua

    2016-02-28

    DFT investigations on beryllium-doped boron nitride meshes or sheets (BNs) predict the existence of a very reactive kind of novel material capable of spontaneously reducing the first hydrogenation step in the CO2 conversion mechanism. This impressive behaviour appears as a result of the very deep π-hole generated by the beryllium moieties, and also determines its selectivity towards the production of CH4.

  13. Long period gratings and rocking filters written with a CO 2 laser in highly-birefringent boron-doped photonic crystal fibers for sensing applications

    NASA Astrophysics Data System (ADS)

    Carvalho, J. P.; Anuszkiewicz, A.; Statkiewicz-Barabach, G.; Baptista, J. M.; Frazão, O.; Mergo, P.; Santos, J. L.; Urbanczyk, W.

    2012-02-01

    In this work, we demonstrate the possibility of fabricating short-length long-period gratings and rocking filters in highly birefringent Photonic Crystal Fiber using a CO 2 laser. In our experiments both kinds of gratings were made in the same Boron doped highly birefringent PCF using similar exposure parameters. We also present the sensing capabilities of both fabricated gratings to temperature, strain and hydrostatic pressure by interrogation of the wavelength shifts at different resonances.

  14. Sensing characteristics of long period gratings and rocking filters based on highly birefringent boron-doped photonic crystal fiber and fabricated by a CO2 laser

    NASA Astrophysics Data System (ADS)

    Carvalho, J. P.; Statkiewicz-Barabach, G.; Anuszkiewicz, A.; Baptista, J. M.; Frazão, O.; Wojcik, J.; Santos, J. L.; Urbanczyk, W.

    2010-04-01

    In this work, we demonstrate the possibility of fabricating short LPGs and rocking filters in highly birefringent Photonic Crystal Fiber using CO2 laser. In our experiments both kinds of gratings were made in the same Boron doped highly birefringent PCF using similar exposure parameters. We also present the sensing capabilities of both fabricated gratings to temperature, strain and hydrostatic pressure by interrogation of the wavelength shifts at the different resonances.

  15. Effective visible light-active boron and europium co-doped BiVO4 synthesized by sol-gel method for photodegradion of methyl orange.

    PubMed

    Wang, Min; Che, Yinsheng; Niu, Chao; Dang, Mingyan; Dong, Duo

    2013-11-15

    Eu-B co-doped BiVO4 visible-light-driven photocatalysts have been synthesized using the sol-gel method. The resulting materials were characterized by a series of joint techniques, including XPS, XRD, SEM, BET, and UV-vis DRS analyses. Compared with BiVO4 and B-BiVO4 photocatalysts, the Eu-B-BiVO4 photocatalysts exhibited much higher photocatalytic activity for methyl orange (MO) degradation under visible light irradiation. The optimal Eu doping content is 0.8 mol%. It was revealed that boron and europium were doped into the lattice of BiVO4 and this led to more surface oxygen vacancies, high specific surface areas, small crystallite size, a narrower band gap and intense light absorbance in the visible region. The doped Eu(III) cations can help in the separation of photogenerated electrons. The synergistic effects of boron and europium in doped BiVO4 were the main reason for improving visible light photocatalytic activity.

  16. Microwave Exfoliation of Graphite Oxides in H2S Plasma for the Synthesis of Sulfur-Doped Graphenes as Oxygen Reduction Catalysts.

    PubMed

    Wong, Colin Hong An; Sofer, Zdeněk; Klímová, Kateřina; Pumera, Martin

    2016-11-23

    Tuning the electronic and chemical properties of graphene can be carried out through heteroatomic doping, enabling its use as an electrocatalyst. Sulfur-doped graphene has been suggested to be a viable alternative to traditional Pt-based catalysts for oxygen reduction under alkaline conditions. Herein we present a fast and efficient route to synthesize S-doped graphenes through the microwave-assisted exfoliation and reduction of three different graphite oxides in the presence of hydrogen sulfide. The materials obtained were characterized using scanning electron microscopy, Raman spectroscopy, X-ray photoelectron spectroscopy, combustion elemental analysis, and voltammetry. These S-doped graphenes were found to have good electrochemical performance and were active in the catalysis of the oxygen reduction reaction.

  17. Simultaneous voltammetric determination of paracetamol and ascorbic acid using a boron-doped diamond electrode modified with Nafion and lead films.

    PubMed

    Tyszczuk-Rotko, Katarzyna; Bęczkowska, Ilona; Wójciak-Kosior, Magdalena; Sowa, Ireneusz

    2014-11-01

    The paper describes the fabrication and application of a novel sensor (a boron-doped diamond electrode modified with Nafion and lead films) for the simultaneous determination of paracetamol and ascorbic acid by differential pulse voltammetry. The main advantage of the lead film and polymer covered boron-doped diamond electrode is that the sensitivity of the stripping responses is increased and the separation of paracetamol and ascorbic acid signals is improved due to the modification of the boron-doped diamond surface by the lead layer. Additionally, the repeatability of paracetamol and ascorbic acid signals is improved by the application of the Nafion film coating. In the presence of oxygen, linear calibration curves were obtained in a wide concentration range from 5×10(-7) to 2×10(-4) mol L(-1) for paracetamol and from 1×10(-6) to 5×10(-4) mol L(-1) for ascorbic acid. The analytical utility of the differential pulse voltammetric method elaborated was tested in the assay of paracetamol and ascorbic acid in commercially available pharmaceutical formulations and the method was validated by high performance liquid chromatography coupled with diode array detector.

  18. Gas adsorption, energetics and electronic properties of boron- and nitrogen-doped bilayer graphenes

    NASA Astrophysics Data System (ADS)

    Fujimoto, Yoshitaka; Saito, Susumu

    2016-10-01

    We study stabilities and electronic properties of several environmental polluting or toxic gas molecules (CO, CO2, NO, and NO2) adsorbed on B and N atoms in bilayer graphene using first-principles electronic-structure calculations. We find that NO and NO2 molecules can be bound chemically on B-doped bilayer graphene with large adsorption energies, while CO and CO2 molecules are not adsorbed chemically on B-doped one. In the case of the N-doped graphene, all four gases do not bind with chemical bonds but adsorb rather physically with small adsorption energies at long distances between gases and graphene. The adsorptions of NO and NO2 molecules on B-doped bilayer graphene induce the acceptor states above the Fermi energy, and we also find that the charge transfer takes place when the NO and the NO2 molecules are adsorbed. Thereby, the B-doped bilayer graphene is expected to be useful for NO and NO2 gas sensor materials.

  19. Computational studies of elementary steps relating to boron doping during diamond chemical vapour deposition.

    PubMed

    Cheesman, Andrew; Harvey, Jeremy N; Ashfold, Michael N R

    2005-03-21

    Density functional theory-based electronic structure computations on small models of the diamond {100} surface have enabled prediction of the energetics and activation parameters of a number of plausible mechanistic steps for boron incorporation into, and boron loss from, the growing diamond surface. Initial proving calculations for the carbon-only case show, as in previous work, that the rate-limiting step for diamond growth involves opening of a five-membered ring species, and subsequent closure to form six-membered rings as in bulk diamond. The five-membered ring intermediate arises following 2 x 1 reconstruction of the {100} surface, or at steps on the {111} surface. Diamond growth arises as a result of successful competition between the ring-opening step and a two-carbon loss step, both of which involve significant activation barriers. In the boron case, we find that BH(x) (x = 0-3) species can all bind to radical sites on the diamond {100} surface to form stable adducts. Interconversion between the surface bound BH, species is facile at the H and H2 number densities and temperatures typical for diamond CVD conditions. B incorporation can occur by a ring expansion mechanism, as in the all-carbon case, and by direct insertion of surface bound BH (and B) species into the C-C bond on the diamond {100} surface. BH(x) loss processes identified include release of surface bound BH3 and/or CH2BH species into the gas phase. Both B incorporation into, and B loss from, the diamond {100} surface are deduced to be significantly less energy demanding than the corresponding carbon addition and loss processes.

  20. Layered structure of anodic SiO{sub 2} films doped with phosphorus or boron

    SciTech Connect

    Mileshko, L. P.

    2009-12-15

    It is shown that anodic silicon oxide films deposited by reanodization (repeated anodic oxidation) of p- and n-type silicon in phosphate (1.5 M H{sub 3}PO{sub 4}), borate (1.5 M H{sub 3}BO{sub 3}), and nitrate (0.04 M NH{sub 4}NO{sub 3}) electrolytes based on tetrahydrofurfuryl alcohol have a three- or four-layer structure both before and after high-temperature annealing. It is assumed that this circumstance accounts for the nonuniform distribution of phosphorus and boron across the thickness of anodic SiO{sub 2}.

  1. Effects of glucose doping on the MgB2 superconductors using cheap crystalline boron

    NASA Astrophysics Data System (ADS)

    Parakkandy, Jafar Meethale; Shahabuddin, Mohammed; Shah, M. Shahabuddin; Alzayed, Nasser S.; Qaid, Salem A. S.; Madhar, Niyaz Ahmad; Ramay, Shahid M.; Shar, Muhammad Ali

    2015-12-01

    We report the effect of glucose (C6H12O6) doping on the structural and electromagnetic properties of MgB2 superconductor fabricated by dry mixing using planetary ball milling. Herein, as-prepared bulk polycrystalline Mg (B1-xCx) 2 samples with different doping levels (x = 0, 2, 4, and 6 at. %) were systematically studied by X-ray diffraction, magnetic and resistivity measurements, and microstructure analysis. When carbon doped, the reduction in critical transition temperature and shrinkage in a-lattice were obviously observed. This resulted in structural distortion of the MgB2 lattice, and thereby, enhanced an impurity scattering. In addition to these, upper critical field and high-field critical current densities were also enhanced. On the other hand, both pinning force and low-field critical current density are decreased. The high field enhancement and low field degradation are due to increase in impurity scattering and decrease in pinning force respectively.

  2. The performance of 3-D graphite doped anodes in microbial electrolysis cells

    NASA Astrophysics Data System (ADS)

    Yasri, Nael G.; Nakhla, George

    2017-02-01

    This study investigated the use of granular activated carbon (GAC) as high surface area 3-dimensional (3-D) anode in MECs systems. The interfacial anodes' charge transfer resistance of the doped GAC did not impact the overall performance of MECs. Based on our finding, the 3-D anode packed with GAC-doped with nonconductive calcium sulfide (CaS) outperformed the more conductive iron (II) sulfide (FeS), magnetite (Fe3O4), or GAC without doping. The results showed higher current densities for 3-D CaS (40.1 A/m3), as compared with 3-D FeS (34.4 A/m3), 3-D Fe3O4 (29.8 A/m3), and 3-D GAC (23.1 A/m3). The higher current density in the 3-D CaS translated to higher coulombic efficiency (96.7%), hydrogen yield (3.6 mol H2/mol acetate), and attached biomass per anode mass (54.01 mg COD biomass/g GAC). Although the 3-D MEC achieved similar hydrogen yield, hydrogen recovery efficiency, and COD removal rate to a conventional sandwich type MEC, the current density, coulombic efficiency, and overall energy efficiency were higher.

  3. Electron and photon degradation in aluminum, gallium and boron doped float zone silicon solar cells

    NASA Technical Reports Server (NTRS)

    Rahilly, W. P.; Scott-Monck, J.; Anspaugh, B.; Locker, D.

    1976-01-01

    Solar cells fabricated from Al, Ga and B doped Lopex silicon over a range of resistivities were tested under varying conditions of 1 MeV electron fluence, light exposures and thermal cycling. Results indicate that Al and Ga can replace B as a P type dopant to yield improved solar cell performance.

  4. Optical Properties and Boron Doping-Induced Conduction-Type Change in SnO2 Thin Films

    NASA Astrophysics Data System (ADS)

    Tran, Quang-Phu; Fang, Jau-Shiung; Chin, Tsung-Shune

    2016-01-01

    Boron-doped tin oxide (BTO) films, 0-5 at.% B, were prepared by sol-gel dip coating on a glass substrate. Dried precursor films were post-annealed at a temperature between 400°C and 750°C for 2 h. The obtained BTO thin films were characterized by x-ray diffraction (XRD), scanning electron microscopy (SEM), ultraviolet-visible light (UV-Vis) spectrometry, a four-point probe, and Hall-effect and Seebeck-effect measurements. Optimal optical transmittance was achieved for post-annealed BTO thin film at 700°C. XRD results show a rutile SnO2 structure with a preferred (110) orientation for all the films. The grain size is 47-21 nm, which reduces with increasing B contents. The optical transmittance is 84.6-88.5% at a wavelength of 550 nm and optical band gap of 3.52-3.75 eV. Electrical resistivity is (3.4-8.2) × 10-3 Ω cm, and figure of merit (0.9-4.3) × 10-3 Ω-1. Carrier concentration is (0.97-7.4) × 1020 cm-3 and mobility (2.5-7.8) cm2 V-1 s-1. BTO film with 4 at.% B shows an optimal combination of properties. Conduction type changes from n- (undoped) to p- (1-4 at.% B), then to n-types (5 at.% B), as evidenced from Hall-effect and Seebeck-effect measurements. This is explained by doping-generated defects and phase separations of Sn3O4 and B2O3.

  5. Assessments of the Effect of Increasingly Severe Cathodic Pretreatments on the Electrochemical Activity of Polycrystalline Boron-Doped Diamond Electrodes.

    PubMed

    Brocenschi, Ricardo F; Hammer, Peter; Deslouis, Claude; Rocha-Filho, Romeu C

    2016-05-17

    The electrochemical response of many redox species on boron-doped diamond (BDD) electrodes can be strongly dependent on the type of chemical termination on their surface, hydrogen (HT-BDD) or oxygen (OT-BDD). For instance, on an HT-BDD electrode the [Fe(CN)6](3-/4-) redox system presents a reversible voltammetric behavior, whereas the oxidation overpotential of ascorbic acid (AA) is significantly decreased. Moreover, the electrochemical activity of BDD electrodes can be significantly affected by electrochemical pretreatments, with cathodic pretreatments (CPTs) leading to redox behaviors associated with HT-BDD. Here we report on the effect of increasingly severe CPTs on the electrochemical activity of a highly doped BDD electrode, assessed with the [Fe(CN)6](3-/4-) and AA redox probes, and on the atomic bonding structure on the BDD surface, assessed by XPS. The hydrogenation level of the BDD surface was increased by CPTs, leading to decreases of the total relative level of oxidation of the BDD surface of up to 36%. Contrary to what is commonly assumed, we show that BDD surfaces do not need to be highly hydrogenated to ensure that a reversible voltammetric behavior is obtained for Fe(CN)6](3-/4-); after a CPT, this was attained even when the total relative level of oxidation on the BDD surface was about 15%. At the same time, the overpotential for AA oxidation was confirmed as being very sensitive to the level of oxidation of the BDD surface, a behavior that might allow the use of AA as a secondary indicator of the relative atomic bonding structure on the BDD surface.

  6. Comparative study of the effects of phosphorus and boron doping in vapor-liquid-solid growth with fixed flow of silicon gas

    NASA Astrophysics Data System (ADS)

    Islam, Md. Shofiqul; Mehedi, Ibrahim Mustafa

    2016-04-01

    This work was carried out to investigate the comparative effects of phosphorus and boron doing in vapor-liquid-solid (VLS) growth. Doped Si microneedles were grown by VLS mechanism at the temperature of 700 °C or less using Au as the catalyst. VLS growth using in-situ doping with the mixed gas of Si2H6 and PH3 produced phosphorus doped n-Si microneedles at Au dot sites, whereas, the mixed gas of Si2H6 and B2H6 produced boron doped p-Si microneedles. The variation of growth rate, diameter, resistivity, impurity concentration and carrier (electron, hole) mobility of these n-Si and p-Si microneeedles were investigated and compared with the variation of dopant gas (PH3 or B2H6) flow, with a fixed flow of Si gas (Si2H6). This comparative study shall be helpful while fabricating devices by growing n-Si and p-Si microneedles one above another by multistep (2-step or 3-step) VLS growth.

  7. Effect of Polishing on the Friction Behaviors and Cutting Performance of Boron-Doped Diamond Films on WC-Co Inserts

    NASA Astrophysics Data System (ADS)

    Wang, Liang; Shen, Bin; Sun, Fanghong; Zhang, Zhiming

    2014-04-01

    Boron doped (B-doped) diamond films are deposited onto WC-Co inserts by HFCVD with the mixture of acetone, trimethyl borate (C3H9BO3) and H2. The as-deposited B-doped diamond films are characterized with scanning electron microscope (SEM), X-ray diffraction (XRD) spectroscopy, Raman spectroscopy, 3D surface topography based on white-light interferometry and Rockwell hardness tester. The effects of mechanical polishing on the friction behavior and cutting performance of B-doped diamond are evaluated by ball-on-plate type reciprocating tribometer and turning of aluminum alloy 7075 materials, respectively. For comparison, the same tests are also conducted for the bare WC-Co inserts with smooth surface. Friction tests suggest that the unpolished and polished B-doped diamond films possess relatively low fluctuation of friction coefficient than as-received bare WC-Co samples. The average stable friction coefficient for B-doped diamond films decreases apparently after mechanical polishing. The values for WC-Co sample, unpolished and polished B-doped diamond films are approximately 0.38, 0.25 and 0.11, respectively. The cutting results demonstrate that the low friction coefficient and high adhesive strength of B-doped diamond films play an essential role in the cutting performance enhancement of the WC-Co inserts. However, the mechanical polishing process may lower the adhesive strength of B-doped diamond films. Consequently, the polished B-doped diamond coated inserts show premature wear in the machining of adhesive aluminum alloy materials.

  8. Synthesis of Low-Density, Carbon-Doped, Porous Hexagonal Boron Nitride Solids.

    PubMed

    Gautam, Chandkiram; Tiwary, Chandra Sekhar; Jose, Sujin; Brunetto, Gustavo; Ozden, Sehmus; Vinod, Soumya; Raghavan, Prasanth; Biradar, Santoshkumar; Galvao, Douglas Soares; Ajayan, Pulickel M

    2015-12-22

    Here, we report the scalable synthesis and characterization of low-density, porous, three-dimensional (3D) solids consisting of two-dimensional (2D) hexagonal boron nitride (h-BN) sheets. The structures are synthesized using bottom-up, low-temperature (∼300 °C), solid-state reaction of melamine and boric acid giving rise to porous and mechanically stable interconnected h-BN layers. A layered 3D structure forms due to the formation of h-BN, and significant improvements in the mechanical properties were observed over a range of temperatures, compared to graphene oxide or reduced graphene oxide foams. A theoretical model based on Density Functional Theory (DFT) is proposed for the formation of h-BN architectures. The material shows excellent, recyclable absorption capacity for oils and organic solvents.

  9. Oxidation of carbon monoxide, hydrogen peroxide and water at a boron doped diamond electrode: the competition for hydroxyl radicals.

    PubMed

    Kisacik, Izzet; Stefanova, Ana; Ernst, Siegfried; Baltruschat, Helmut

    2013-04-07

    Boron doped diamond (BDD) electrodes have an extremely high over-voltage for oxygen evolution from water, which favours its use in oxidation processes of other compounds at high potentials. We used a rotating ring disc (RRDE) assembly and differential electrochemical mass spectrometry (DEMS) in order to monitor the consumption or the production of species in the course of the electrode processes. By intercepting the intermediate of the electrochemical water oxidation with chemical reactions we demonstrate clearly, albeit indirectly, that in the water oxidation process at BDD above 2.5 V the first step is the formation of ˙OH radicals. The electro-oxidation of CO to CO2 at BDD electrodes proceeds only via a first attack by ˙OH radicals followed by a further electron transfer to the electrode. At potentials below the onset of oxygen evolution from water, H2O2 is oxidised by a direct electron transfer to the BDD electrode, while at higher potentials, two different reactions paths compete for the ˙OH radicals formed in the first electron transfer from water: one, where these ˙OH radicals react with each other followed by further electron transfers leading to O2 on the one hand and one, where ˙OH radicals react with other species like H2O2 or CO with subsequent electron transfers on the other hand.

  10. Biofouling resistance of boron-doped diamond neural stimulation electrodes is superior to titanium nitride electrodes in vivo

    NASA Astrophysics Data System (ADS)

    Meijs, S.; Alcaide, M.; Sørensen, C.; McDonald, M.; Sørensen, S.; Rechendorff, K.; Gerhardt, A.; Nesladek, M.; Rijkhoff, N. J. M.; Pennisi, C. P.

    2016-10-01

    Objective. The goal of this study was to assess the electrochemical properties of boron-doped diamond (BDD) electrodes in relation to conventional titanium nitride (TiN) electrodes through in vitro and in vivo measurements. Approach. Electrochemical impedance spectroscopy, cyclic voltammetry and voltage transient (VT) measurements were performed in vitro after immersion in a 5% albumin solution and in vivo after subcutaneous implantation in rats for 6 weeks. Main results. In contrast to the TiN electrodes, the capacitance of the BDD electrodes was not significantly reduced in albumin solution. Furthermore, BDD electrodes displayed a decrease in the VTs and an increase in the pulsing capacitances immediately upon implantation, which remained stable throughout the whole implantation period, whereas the opposite was the case for the TiN electrodes. Significance. These results reveal that BDD electrodes possess a superior biofouling resistance, which provides significantly stable electrochemical properties both in protein solution as well as in vivo compared to TiN electrodes.

  11. An aptasensor for ochratoxin A based on grafting of polyethylene glycol on a boron-doped diamond microcell.

    PubMed

    Chrouda, A; Sbartai, A; Baraket, A; Renaud, L; Maaref, A; Jaffrezic-Renault, N

    2015-11-01

    A novel strategy for the fabrication of an electrochemical label-free aptasensor for small-size molecules is proposed and demonstrated as an aptasensor for ochratoxin A (OTA). A long spacer chain of polyethylene glycol (PEG) was immobilized on a boron-doped diamond (BDD) microcell via electrochemical oxidation of its terminal amino groups. The amino-aptamer was then covalently linked to the carboxyl end of the immobilized PEG as a two-piece macromolecule, autoassembled at the BDD surface, forming a dense layer. Due to a change in conformation of the aptamer on the target analyte binding, a decrease of the electron transfer rate of the redox [Fe(CN)6](4-/3-) probe was observed. To quantify the amount of OTA, the decrease of the square wave voltammetry (SWV) peak maximum of this probe was monitored. The plot of the peak maximum against the logarithm of OTA concentration was linear along the range from 0.01 to 13.2 ng/L, with a detection limit of 0.01 ng/L. This concept was validated on spiked real samples of rice.

  12. Experimental Approach to Controllably Vary Protein Oxidation While Minimizing Electrode Adsorption for Boron-Doped Diamond Electrochemical Surface Mapping Applications

    SciTech Connect

    McClintock, Carlee; Hettich, Robert {Bob} L

    2013-01-01

    Oxidative protein surface mapping has become a powerful approach for measuring the solvent accessibility of folded protein structures. A variety of techniques exist for generating the key reagent hydroxyl radicals for these measurements; however, many of these approaches require use of radioactive sources or caustic oxidizing chemicals. The purpose of this research was to evaluate and optimize the use of boron-doped diamond (BDD) electrochemistry as a highly accessible tool for producing hydroxyl radicals as a means to induce a controllable level of oxidation on a range of intact proteins. These experiments utilize a relatively high flow rates to reduce protein residence time inside the electrochemical flow chamber, along with a unique cell activation approach to improve control over the intact protein oxidation yield. Studies were conducted to evaluate the level of protein adsorption onto the electrode surface. This report demonstrates a robust protocol for the use of BDD electrochemistry and high performance LC-MS/MS as a high-throughput experimental pipeline for probing higher order protein structure, and illustrates how it is complementary to predictive computational modeling efforts.

  13. Toward high-throughput screening of NAD(P)-dependent oxidoreductases using boron-doped diamond microelectrodes and microfluidic devices.

    PubMed

    Oyobiki, Ryo; Kato, Taisuke; Katayama, Michinobu; Sugitani, Ai; Watanabe, Takeshi; Einaga, Yasuaki; Matsumoto, Yoshinori; Horisawa, Kenichi; Doi, Nobuhide

    2014-10-07

    Although oxidoreductases are widely used in many applications, such as biosensors and biofuel cells, improvements in the function of existing oxidoreductases or the discovery of novel oxidoreductases with greater activities is desired. To increase the activity of oxidoreductases by directed evolution, a powerful screening technique for oxidoreductases is required. In this study, we demonstrate the utility of boron-doped diamond (BDD) microelectrodes for quantitative and potentially high-throughput measurement of the activity of NAD(P)-dependent oxidoreductases. We first confirmed that BDD microelectrodes can quantify the activity of low concentrations (10-100 pM) of glucose-6-phosphate dehydrogenase and alcohol dehydrogenase with a measuring time of 1 ms per sample. In addition, we found that poisoning of BDD microelectrodes can be repressed by optimizing the pH and by adding l-arginine to the enzyme solution as an antiaggregation agent. Finally, we fabricated a microfluidic device containing a BDD electrode for the first time and observed the elevation of the oxidation current of NADH with increasing flow rate. These results imply that the combination of a BDD microelectrode and microfluidics can be used for high-throughput screening of an oxidoreductase library containing a large number (>10(6)) of samples, each with a small (nanoliter) sample volume.

  14. Simultaneous square-wave voltammetric determination of aspartame and cyclamate using a boron-doped diamond electrode.

    PubMed

    Medeiros, Roberta Antigo; de Carvalho, Adriana Evaristo; Rocha-Filho, Romeu C; Fatibello-Filho, Orlando

    2008-07-30

    A simple and highly selective electrochemical method was developed for the simultaneous determination of aspartame and cyclamate in dietary products at a boron-doped diamond (BDD) electrode. In square-wave voltammetric (SWV) measurements, the BDD electrode was able to separate the oxidation peak potentials of aspartame and cyclamate present in binary mixtures by about 400 mV. The detection limit for aspartame in the presence of 3.0x10(-4) mol L(-1) cyclamate was 4.7x10(-7) mol L(-1), and the detection limit for cyclamate in the presence of 1.0x10(-4) mol L(-1) aspartame was 4.2x10(-6) mol L(-1). When simultaneously changing the concentration of both aspartame and cyclamate in a 0.5 mol L(-1) sulfuric acid solution, the corresponding detection limits were 3.5x10(-7) and 4.5x10(-6) mol L(-1), respectively. The relative standard deviation (R.S.D.) obtained was 1.3% for the 1.0x10(-4) mol L(-1) aspartame solution (n=5) and 1.1% for the 3.0x10(-3) mol L(-1) cyclamate solution. The proposed method was successfully applied in the determination of aspartame in several dietary products with results similar to those obtained using an HPLC method at 95% confidence level.

  15. Transport Properties of p-n Junctions Formed in Boron/Nitrogen Doped Carbon Nanotubes and Graphene Nanoribbons

    NASA Astrophysics Data System (ADS)

    Hammouri, Mahmoud; Vasiliev, Igor

    2014-03-01

    We apply ab initio computational methods based on density functional theory to study the transport properties of p-n junctions made of single-walled carbon nanotubes and graphene nanoribbons. The p-n junctions are formed by doping the opposite ends of carbon nanostructures with boron and nitrogen atoms. Our calculations are carried out using the SIESTA electronic structure code combined with the generalized gradient approximation for the exchange-correlation functional. The transport properties are calculated using a self-consistent nonequilibrium Green's function method implemented in the TranSIESTA package. The modeled nanoscale p-n junctions exhibit linear I-V characteristics in the forward bias and nonlinear I-V characteristics with a negative differential resistance in the reverse bias. The computed transmission spectra and the I-V characteristics of the p-n junctions are compared to the results of other theoretical studies and to the available experimental data. Supported by NMSU GREG Award and by NSF CHE-1112388.

  16. Electrochemical degradation of a real textile effluent using boron-doped diamond or β-PbO2 as anode.

    PubMed

    Aquino, José M; Pereira, Gabriel F; Rocha-Filho, Romeu C; Bocchi, Nerilso; Biaggio, Sonia R

    2011-09-15

    Constant current electrolyses are carried out in a filter-press reactor using a boron-doped diamond (Nb/BDD) or a Ti-Pt/β-PbO(2) anode, varying current density (j) and temperature. The degradation of the real textile effluent is followed by its decolorization and chemical oxygen demand (COD) abatement. The effect of adding NaCl (1.5 g L(-1)) on the degradation of the effluent is also investigated. The Nb/BDD anode yields much higher decolorization (attaining the DFZ limit) and COD-abatement rates than the Ti-Pt/β-PbO(2) anode, at any experimental condition. The best conditions are j = 5 mA cm(-2) and 55 °C, for the system's optimized hydrodynamic conditions. The addition of chloride ions significantly increases the decolorization rate; thus a decrease of more than 90% of the effluent relative absorbance is attained using an applied electric charge per unit volume of the electrolyzed effluent (Q(ap)) of only about 2 kA h m(-3). Practically total abatement of the effluent COD is attained with the Nb/BDD anode using a Q(ap) value of only 7 kA h m(-3), with an energy consumption of about 30 kW h m(-3). This result allows to conclude that the Nb/BDD electrode might be an excellent option for the remediation of textile effluents.

  17. Removal of organic contaminants from secondary effluent by anodic oxidation with a boron-doped diamond anode as tertiary treatment.

    PubMed

    Garcia-Segura, Sergi; Keller, Jürg; Brillas, Enric; Radjenovic, Jelena

    2015-01-01

    Electrochemical advanced oxidation processes (EAOPs) have been widely investigated as promising technologies to remove trace organic contaminants from water, but have rarely been used for the treatment of real waste streams. Anodic oxidation with a boron-doped diamond (BDD) anode was applied for the treatment of secondary effluent from a municipal sewage treatment plant containing 29 target pharmaceuticals and pesticides. The effectiveness of the treatment was assessed from the contaminants decay, dissolved organic carbon and chemical oxygen demand removal. The effect of applied current and pH was evaluated. Almost complete mineralization of effluent organic matter and trace contaminants can be obtained by this EAOP primarily due to the action of hydroxyl radicals formed at the BDD surface. The oxidation of Cl(-) ions present in the wastewater at the BDD anode gave rise to active chlorine species (Cl2/HClO/ClO(-)), which are competitive oxidizing agents yielding chloramines and organohalogen byproducts, quantified as adsorbable organic halogen. However, further anodic oxidation of HClO/ClO(-) species led to the production of ClO3(-) and ClO4(-) ions. The formation of these species hampers the application as a single-stage tertiary treatment, but posterior cathodic reduction of chlorate and perchlorate species may reduce the risks associated to their presence in the environment.

  18. Boron Doping of Multiwalled Carbon Nanotubes Significantly Enhances Hole Extraction in Carbon-Based Perovskite Solar Cells.

    PubMed

    Zheng, Xiaoli; Chen, Haining; Li, Qiang; Yang, Yinglong; Wei, Zhanhua; Bai, Yang; Qiu, Yongcai; Zhou, Dan; Wong, Kam Sing; Yang, Shihe

    2017-03-15

    Compared to the conventional perovskite solar cells (PSCs) containing hole-transport materials (HTM), carbon materials based HTM-free PSCs (C-PSCs) have often suffered from inferior power conversion efficiencies (PCEs) arising at least partially from the inefficient hole extraction at the perovskite-carbon interface. Here, we show that boron (B) doping of multiwalled carbon nanotubes (B-MWNTs) electrodes are superior in enabling enhanced hole extraction and transport by increasing work function, carrier concentration, and conductivity of MWNTs. The C-PSCs prepared using the B-MWNTs as the counter electrodes to extract and transport hole carriers have achieved remarkably higher performances than that with the undoped MWNTs, with the resulting PCE being considerably improved from 10.70% (average of 9.58%) to 14.60% (average of 13.70%). Significantly, these cells show negligible hysteretic behavior. Moreover, by coating a thin layer of insulating aluminum oxide (Al2O3) on the mesoporous TiO2 film as a physical barrier to substantially reduce the charge losses, the PCE has been further pushed to 15.23% (average 14.20%). Finally, the impressive durability and stability of the prepared C-PSCs were also testified under various conditions, including long-term air exposure, heat treatment, and high humidity.

  19. Electrochemical Sensing and Assessment of Parabens in Hydro- Alcoholic Solutions and Water Using a Boron-Doped Diamond Electrode.

    PubMed

    Radovan, Ciprian; Cinghită, Dan; Manea, Florica; Mincea, Manuela; Cofan, Codruta; Ostafe, Vasile

    2008-07-25

    In this paper, the electrochemical behaviour of several parabens preservatives, i.e. esters of p-hydroxybenzoic acid, methyl-, ethyl- and propyl-4-hydroxybenzoates as methyl-, ethyl- and propyl-parabens (MB, EB, and PB), has been investigated at a commercial boron-doped diamond electrode (BDDE), especially in the anodic potential range, in both hydro-alcoholic and aqueous media. The cyclic voltammetric and chronoamperometric measurements yielded calibration plots with very good linearity (R2 between 0.990 and 0.998) and high sensitivity, useful for detection and analytical applications. The determination of the characteristics of individual compounds, of an "overall paraben index", the assessment of the stability and the saturation solubility in water, and the amperometric sensing and determination in double distilled, tap and river water matrix of the relatively slightly soluble investigated parabens have been carried out using electrochemical alternative. Estimated water solubility was correlated with the octanol-water partition coefficient. Several ideas regarding stability and persistence of the presumptive eco-toxic investigated preservatives in the environment or water systems have been adjacently discussed.

  20. Sensitive voltammetric determination of thymol in essential oil of Carum copticum seeds using boron-doped diamond electrode.

    PubMed

    Stanković, Dalibor M

    2015-10-01

    Essential oil of Carum copticum seeds, obtained from a local shop, was extracted and content of thymol was analyzed using square-wave voltammetry at boron-doped diamond electrode. The effect of various parameters, such as pH of supporting electrolyte and square-wave voltammetric parameters (modulation amplitude and frequency), was examined. In Britton-Robinson buffer solution (pH 4), thymol provided a single and oval-shaped irreversible oxidation peak at +1.13 V versus silver/silver chloride potassium electrode (3M). Under optimal experimental conditions, a plot of peak height against concentration of thymol was found to be linear over the range of 4 to 100μM consisting of two linear ranges: from 4 to 20μM (R(2)=0.9964) and from 20 to 100μM (R(2)=0.9993). The effect of potential interferences such as p-cymene and γ-terpinene (major components in essential oil of C. copticum seeds) was evaluated. Thus, the proposed method displays a sufficient selectivity toward thymol with a detection limit of 3.9μM, and it was successfully applied for the determination of thymol in essential oil of C. copticum seeds. The Prussian blue method was used for validation of the proposed electroanalytical method.

  1. Boron doped diamond sensor for sensitive determination of metronidazole: Mechanistic and analytical study by cyclic voltammetry and square wave voltammetry.

    PubMed

    Ammar, Hafedh Belhadj; Brahim, Mabrouk Ben; Abdelhédi, Ridha; Samet, Youssef

    2016-02-01

    The performance of boron-doped diamond (BDD) electrode for the detection of metronidazole (MTZ) as the most important drug of the group of 5-nitroimidazole was proven using cyclic voltammetry (CV) and square wave voltammetry (SWV) techniques. A comparison study between BDD, glassy carbon and silver electrodes on the electrochemical response was carried out. The process is pH-dependent. In neutral and alkaline media, one irreversible reduction peak related to the hydroxylamine derivative formation was registered, involving a total of four electrons. In acidic medium, a prepeak appears probably related to the adsorption affinity of hydroxylamine at the electrode surface. The BDD electrode showed higher sensitivity and reproducibility analytical response, compared with the other electrodes. The higher reduction peak current was registered at pH11. Under optimal conditions, a linear analytical curve was obtained for the MTZ concentration in the range of 0.2-4.2μmolL(-1), with a detection limit of 0.065μmolL(-1).

  2. Highly Sensitive Measurement of Bio-Electric Potentials by Boron-Doped Diamond (BDD) Electrodes for Plant Monitoring.

    PubMed

    Ochiai, Tsuyoshi; Tago, Shoko; Hayashi, Mio; Fujishima, Akira

    2015-10-23

    We describe a sensitive plant monitoring system by the detection of the bioelectric potentials in plants with boron-doped diamond (BDD) electrodes. For sensor electrodes, we used commercially available BDD, Ag, and Pt plate electrodes. We tested this approach on a hybrid species in the genus Opuntia (potted) and three different trees (ground-planted) at different places in Japan. For the Opuntia, we artificially induced bioelectric potential changes by the surface potential using the fingers. We detected substantial changes in bioelectric potentials through all electrodes during finger touches on the surface of potted Opuntia hybrid plants, although the BDD electrodes were several times more sensitive to bioelectric potential change compared to the other electrodes. Similarly for ground-planted trees, we found that both BDD and Pt electrodes detected bioelectric potential change induced by changing environmental factors (temperature and humidity) for months without replacing/removing/changing electrodes, BDD electrodes were 5-10 times more sensitive in this detection than Pt electrodes. Given these results, we conclude that BDD electrodes on live plant tissue were able to consistently detect bioelectrical potential changes in plants.

  3. Monitoring the evolution of boron doped porous diamond electrode on flexible retinal implant by OCT and in vivo impedance spectroscopy.

    PubMed

    Hébert, Clément; Cottance, Myline; Degardin, Julie; Scorsone, Emmanuel; Rousseau, Lionel; Lissorgues, Gaelle; Bergonzo, Philippe; Picaud, Serge

    2016-12-01

    Nanocrystalline Boron doped Diamond proved to be a very attractive material for neural interfacing, especially with the retina, where reduce glia growth is observed with respect to other materials, thus facilitating neuro-stimulation over long terms. In the present study, we integrated diamond microelectrodes on a polyimide substrate and investigated their performances for the development of neural prosthesis. A full description of the microfabrication of the implants is provided and their functionalities are assessed using cyclic voltammetry and electrochemical impedance spectroscopy. A porous structure of the electrode surface was thus revealed and showed promising properties for neural recording or stimulation. Using the flexible implant, we showed that is possible to follow in vivo the evolution of the electric contact between the diamond electrodes and the retina over 4months by using electrochemical impedance spectroscopy. The position of the implant was also monitored by optical coherence tomography to corroborate the information given by the impedance measurements. The results suggest that diamond microelectrodes are very good candidates for retinal prosthesis.

  4. Electrochemical Sensing and Assessment of Parabens in Hydro-Alcoholic Solutions and Water Using a Boron-Doped Diamond Electrode

    PubMed Central

    Radovan, Ciprian; Cinghiță, Dan; Manea, Florica; Mincea, Manuela; Cofan, Codruța; Ostafe, Vasile

    2008-01-01

    In this paper, the electrochemical behaviour of several parabens preservatives, i.e. esters of p-hydroxybenzoic acid, methyl-, ethyl- and propyl-4-hydroxybenzoates as methyl-, ethyl- and propyl-parabens (MB, EB, and PB), has been investigated at a commercial boron-doped diamond electrode (BDDE), especially in the anodic potential range, in both hydro-alcoholic and aqueous media. The cyclic voltammetric and chronoamperometric measurements yielded calibration plots with very good linearity (R2 between 0.990 and 0.998) and high sensitivity, useful for detection and analytical applications. The determination of the characteristics of individual compounds, of an “overall paraben index”, the assessment of the stability and the saturation solubility in water, and the amperometric sensing and determination in double distilled, tap and river water matrix of the relatively slightly soluble investigated parabens have been carried out using electrochemical alternative. Estimated water solubility was correlated with the octanol-water partition coefficient. Several ideas regarding stability and persistence of the presumptive eco-toxic investigated preservatives in the environment or water systems have been adjacently discussed. PMID:27879939

  5. Electrochemical analysis of chloramphenicol using boron-doped diamond electrode applied to a flow-injection system.

    PubMed

    Chuanuwatanakul, Suchada; Chailapakul, Orawon; Motomizu, Shoji

    2008-04-01

    The electrochemical properties of chloramphenicol at a boron-doped diamond thin-film (BDD) electrode were studied using cyclic voltammetry. The highest current response of chloramphenicol was obtained with phosphate buffer, pH 6 (0.1 M) in 1% ethanol. The relationship between the concentration of chloramphenicol and the current response was linear over the range of 0.1-10 mM (R2=0.9990). The amount of chloramphenicol was analyzed by flow-injection analysis. A thin-layer flow cell equipped with a BDD electrode was used as an amperometric detector, and experiments were carried out at -0.7 V (vs. Ag/AgCl). The linear relationship between the current response and the concentration of chloramphenicol in the range of 0.1-50 microM (R2=0.9948) and the limit of detection of 0.03 microM (S/N=3) were obtained. This method has been successfully applied to the determination of chloramphenicol in sterile eye drops and milk sample by the standard addition method. The average recoveries of chloramphenicol in eye drops were 98.0%, and the average recoveries of chloramphenicol from spiked milk were 93.9-103%.

  6. Highly Sensitive Measurement of Bio-Electric Potentials by Boron-Doped Diamond (BDD) Electrodes for Plant Monitoring

    PubMed Central

    Ochiai, Tsuyoshi; Tago, Shoko; Hayashi, Mio; Fujishima, Akira

    2015-01-01

    We describe a sensitive plant monitoring system by the detection of the bioelectric potentials in plants with boron-doped diamond (BDD) electrodes. For sensor electrodes, we used commercially available BDD, Ag, and Pt plate electrodes. We tested this approach on a hybrid species in the genus Opuntia (potted) and three different trees (ground-planted) at different places in Japan. For the Opuntia, we artificially induced bioelectric potential changes by the surface potential using the fingers. We detected substantial changes in bioelectric potentials through all electrodes during finger touches on the surface of potted Opuntia hybrid plants, although the BDD electrodes were several times more sensitive to bioelectric potential change compared to the other electrodes. Similarly for ground-planted trees, we found that both BDD and Pt electrodes detected bioelectric potential change induced by changing environmental factors (temperature and humidity) for months without replacing/removing/changing electrodes, BDD electrodes were 5–10 times more sensitive in this detection than Pt electrodes. Given these results, we conclude that BDD electrodes on live plant tissue were able to consistently detect bioelectrical potential changes in plants. PMID:26512663

  7. Electrochemical degradation of the antihypertensive losartan in aqueous medium by electro-oxidation with boron-doped diamond electrode.

    PubMed

    Salazar, Claudio; Contreras, Nicole; Mansilla, Héctor D; Yáñez, Jorge; Salazar, Ricardo

    2016-12-05

    In this work the electrochemical oxidation of losartan, an emerging pharmaceutical pollutant, was studied. Electrochemical oxidation was carried out in batch mode, in an open and undivided cell of 100cm(3) using a boron-doped diamond (BDD)/stainless steel system. With Cl(-) medium 56% of mineralization was registered, while with the trials containing SO4(2-) as supporting electrolyte a higher mineralization yield of 67% was reached, even obtaining a total removal of losartan potassium at 80mAcm(-2) and 180min of reaction time at pH 7.0. Higher losartan potassium concentrations enhanced the mineralization degree and the efficiency of the electrochemical oxidation process. During the mineralization up to 4 aromatic intermediates were identified by ultra high performance liquid chromatography tandem mass spectrometry (UHPLC-MS/MS). Moreover, short-linear carboxylic acids, like oxalic, succinic and oxamic were detected and quantified by ion-exclusion HPLC. Finally, the ability of the electrochemical oxidation process to mineralize dissolved commercial tablets containing losartan was achieved, obtaining TOC removal up to 71% under optimized conditions (10mAcm(-2), 0.05M Na2SO4, pH 7.0 and 25°C and 360min of electrolysis).

  8. Determination of vanillin in commercial food product by adsorptive stripping voltammetry using a boron-doped diamond electrode.

    PubMed

    Yardım, Yavuz; Gülcan, Mehmet; Şentürk, Zühre

    2013-12-01

    A method for the determination of food additive vanillin was developed by adsorptive stripping voltammetry. Its determination was carried out at the anodically pre-treated boron-doped diamond electrode in aqueous solutions. Using square-wave stripping mode, the compound yielded a well-defined voltammetric response in phosphate buffer, pH 2.5 at +1.14 V (vs. Ag/AgCl) (a pre-concentration step being carried out at open-circuit condition for 60s). A linear calibration graph was obtained in the concentration range of 0.5-15.0 μg mL(-1) (3.3×10(-6)-9.8×10(-5) mol L(-1)) with a detection limit of 0.024 μg mL(-1) (1.6×10(-7) mol L(-1)). As an example, the practical applicability of the proposed method was tested for the determination of this flavouring agent in commercial pudding powder of Keshkule (Turkish milk pudding with almond flour).

  9. Anodic stripping voltammetry of gold nanoparticles at boron-doped diamond electrodes and its application in immunochromatographic strip tests.

    PubMed

    Ivandini, Tribidasari A; Wicaksono, Wiyogo P; Saepudin, Endang; Rismetov, Bakhadir; Einaga, Yasuaki

    2015-03-01

    Anodic stripping voltammetry (ASV) of colloidal gold-nanoparticles (AuNPs) was investigated at boron-doped diamond (BDD) electrodes in 50 mM HClO4. A deposition time of 300 s at-0.2 V (vs. Ag/AgCl) was fixed as the condition for the ASV. The voltammograms showed oxidation peaks that could be attributed to the oxidation of gold. These oxidation peaks were then investigated for potential application in immunochromatographic strip tests for the selective and quantitative detection of melamine, in which AuNPs were used as the label for the antibody of melamine. Linear regression of the oxidation peak currents appeared in the concentration range from 0.05-0.6 μg/mL melamine standard, with an estimated LOD of 0.069 μg/mL and an average relative standard deviation of 8.0%. This indicated that the method could be considered as an alternative method for selective and quantitative immunochromatographic applications. The validity was examined by the measurements of melamine injected into milk samples, which showed good recovery percentages during the measurements.

  10. Photovoltaic devices based on high density boron-doped single-walled carbon nanotube/n-Si heterojunctions

    DOE PAGES

    Saini, Viney; Li, Zhongrui; Bourdo, Shawn; ...

    2011-01-13

    A simple and easily processible photovoltaic device has been developed based on borondoped single-walled carbon nanotubes (B-SWNTs) and n-type silicon (n-Si) heterojunctions. The single-walled carbon nanotubes (SWNTs) were substitutionally doped with boron atoms by thermal annealing, in the presence of B2O3. The samples used for these studies were characterized by Raman spectroscopy, thermal gravimetric analysis (TGA), transmission electron microscopy (TEM), and x-ray photoelectron spectroscopy (XPS). The fully functional solar cell devices were fabricated by airbrush deposition that generated uniform B-SWNT films on top of the n-Si substrates. The carbon nanotube films acted as exciton-generation sites, charge collection and transportation, whilemore » the heterojunctions formed between B-SWNTs and n-Si acted as charge dissociation centers. The current-voltage characteristics in the absence of light and under illumination, as well as optical transmittance spectrum are reported here. It should be noted that the device fabrication process can be made amenable to scalability by depositing direct and uniform films using airbrushing, inkjet printing, or spin-coating techniques.« less

  11. Photovoltaic devices based on high density boron-doped single-walled carbon nanotube/n-Si heterojunctions

    SciTech Connect

    Saini, Viney; Li, Zhongrui; Bourdo, Shawn; Kunets, Vasyl P.; Trigwell, Steven; Couraud, Arthur; Rioux, Julien; Boyer, Cyril; Nteziyaremye, Valens; Dervishi, Enkeleda; Biris, Alexandru R.; Salamo, Gregory J.; Viswanathan, Tito; Biris, Alexandru S.

    2011-01-13

    A simple and easily processible photovoltaic device has been developed based on borondoped single-walled carbon nanotubes (B-SWNTs) and n-type silicon (n-Si) heterojunctions. The single-walled carbon nanotubes (SWNTs) were substitutionally doped with boron atoms by thermal annealing, in the presence of B2O3. The samples used for these studies were characterized by Raman spectroscopy, thermal gravimetric analysis (TGA), transmission electron microscopy (TEM), and x-ray photoelectron spectroscopy (XPS). The fully functional solar cell devices were fabricated by airbrush deposition that generated uniform B-SWNT films on top of the n-Si substrates. The carbon nanotube films acted as exciton-generation sites, charge collection and transportation, while the heterojunctions formed between B-SWNTs and n-Si acted as charge dissociation centers. The current-voltage characteristics in the absence of light and under illumination, as well as optical transmittance spectrum are reported here. It should be noted that the device fabrication process can be made amenable to scalability by depositing direct and uniform films using airbrushing, inkjet printing, or spin-coating techniques.

  12. Highly sensitive detection of influenza virus by boron-doped diamond electrode terminated with sialic acid-mimic peptide

    PubMed Central

    Matsubara, Teruhiko; Ujie, Michiko; Yamamoto, Takashi; Akahori, Miku; Einaga, Yasuaki; Sato, Toshinori

    2016-01-01

    The progression of influenza varies according to age and the presence of an underlying disease; appropriate treatment is therefore required to prevent severe disease. Anti-influenza therapy, such as with neuraminidase inhibitors, is effective, but diagnosis at an early phase of infection before viral propagation is critical. Here, we show that several dozen plaque-forming units (pfu) of influenza virus (IFV) can be detected using a boron-doped diamond (BDD) electrode terminated with a sialic acid-mimic peptide. The peptide was used instead of the sialyloligosaccharide receptor, which is the common receptor of influenza A and B viruses required during the early phase of infection, to capture IFV particles. The peptide, which was previously identified by phage-display technology, was immobilized by click chemistry on the BDD electrode, which has excellent electrochemical characteristics such as low background current and weak adsorption of biomolecules. Electrochemical impedance spectroscopy revealed that H1N1 and H3N2 IFVs were detectable in the range of 20–500 pfu by using the peptide-terminated BDD electrode. Our results demonstrate that the BDD device integrated with the receptor-mimic peptide has high sensitivity for detection of a low number of virus particles in the early phase of infection. PMID:27457924

  13. Electrochemical oxidation of tramadol in low-salinity reverse osmosis concentrates using boron-doped diamond anodes.

    PubMed

    Lütke Eversloh, Christian; Schulz, Manoj; Wagner, Manfred; Ternes, Thomas A

    2015-04-01

    The electrochemical treatment of low-salinity reverse osmosis (RO) concentrates was investigated using tramadol (100 μM) as a model substance for persistent organic contaminants. Galvanostatic degradation experiments using boron-doped diamond electrodes at different applied currents were conducted in RO concentrates as well as in ultra-pure water containing either sodium chloride or sodium sulfate. Kinetic investigations revealed a significant influence of in-situ generated active chlorine besides direct anodic oxidation. Therefore, tramadol concentrations decreased more rapidly at elevated chloride content. Nevertheless, reduction of total organic carbon (TOC) was found to be comparatively low, demonstrating that transformation rather than mineralization was taking place. Early stage product formation could be attributed to both direct and indirect processes, including demethylation, hydroxylation, dehydration, oxidative aromatic ring cleavage and halogenation reactions. The latter led to various halogenated derivatives and resulted in AOX (adsorbable organic halogens) formation in the lower mg/L-range depending on the treatment conditions. Characterisation of transformation products (TPs) was achieved via MS(n) experiments and additional NMR measurements. Based on identification and quantification of the main TPs in different matrices and on additional potentiostatic electrolysis, a transformation pathway was proposed.

  14. Electrochemical disinfection using boron-doped diamond electrode--the synergetic effects of in situ ozone and free chlorine generation.

    PubMed

    Rajab, Mohamad; Heim, Carolin; Letzel, Thomas; Drewes, Jörg E; Helmreich, Brigitte

    2015-02-01

    This work investigated the capability of using a boron-doped diamond (BDD) electrode for bacterial disinfection in different water matrices containing varying amounts of chloride. The feed water containing Pseudomonas aeruginosa was electrochemically treated while applying different electrode conditions. Depending on the applied current density and the exposure time, inactivation between 4- and 8-log of the targeted microorganisms could be achieved. The disinfection efficiency was driven by the generation of free chlorine as a function of chloride concentration in the water. A synergetic effect of generating both free chlorine and ozone in situ during the disinfection process resulted in an effective bactericidal impact. The formation of the undesired by-products chlorate and perchlorate depended on the water matrix, the applied current density and the desired target disinfection level. In case of synthetic water with a low chloride concentration (20 mg L(-1)) and an applied current density of 167 mA cm(-2), a 6-log inactivation of Pseudomonas aeruginosa could be achieved after 5 min of exposure. The overall energy consumption ranged between 0.3 and 0.6 kW h m(-3) depending on the applied current density and water chemistry. Electrochemical water disinfection represents a suitable and efficient process for producing pathogen-free water without the use of any chemicals.

  15. Synergetic antibacterial activity of reduced graphene oxide and boron doped diamond anode in three dimensional electrochemical oxidation system

    NASA Astrophysics Data System (ADS)

    Qi, Xiujuan; Wang, Ting; Long, Yujiao; Ni, Jinren

    2015-05-01

    A 100% increment of antibacterial ability has been achieved due to significant synergic effects of boron-doped diamond (BDD) anode and reduced graphene oxide (rGO) coupled in a three dimensional electrochemical oxidation system. The rGO, greatly enhanced by BDD driven electric field, demonstrated strong antibacterial ability and even sustained its excellent performance during a reasonable period after complete power cut in the BDD-rGO system. Cell damage experiments and TEM observation confirmed much stronger membrane stress in the BDD-rGO system, due to the faster bacterial migration and charge transfer by the expanded electro field and current-carrying efficiency by quantum tunnel. Reciprocally the hydroxyl-radical production was eminently promoted with expanded area of electrodes and delayed recombination of the electron-hole pairs in presence of the rGO in the system. This implied a huge potential for practical disinfection with integration of the promising rGO and the advanced electrochemical oxidation systems.

  16. Photocarrier Radiometry Investigation of Light-Induced Degradation of Boron-Doped Czochralski-Grown Silicon Without Surface Passivation

    NASA Astrophysics Data System (ADS)

    Wang, Qian; Li, Bincheng

    2016-04-01

    Light-induced degradation (LID) effects of boron-doped Cz silicon wafers without surface passivation are investigated in details by photocarrier radiometry (PCR). The resistivity of all samples is in the range of 0.006 Ω {\\cdot } {cm} to 38 Ω {\\cdot } {cm}. It is found that light-induced changes in surface state occupation have a great effect on LID under illumination. With the increasing contribution of light-induced changes in surface state occupation, the generation rate of the defect decreases. The light-induced changes in surface state occupation and light-induced degradation dominate the temporal behaviors of the excess carrier density of high- and low-resistivity Si wafers, respectively. Moreover, the temporal behaviors of PCR signals of these samples under laser illumination with different powers, energy of photons, and multiple illuminations were also analyzed to understand the light-induced change of material properties. Based on the nonlinear dependence of PCR signal on the excitation power, a theoretical model taking into account both light-induced changes in surface state occupation and LID processes was proposed to explain those temporal behaviors.

  17. Application of electrochemical technology for removing petroleum hydrocarbons from produced water using lead dioxide and boron-doped diamond electrodes.

    PubMed

    Gargouri, Boutheina; Gargouri, Olfa Dridi; Gargouri, Bochra; Trabelsi, Souhel Kallel; Abdelhedi, Ridha; Bouaziz, Mohamed

    2014-12-01

    Although diverse methods exist for treating polluted water, the most promising and innovating technology is the electrochemical remediation process. This paper presents the anodic oxidation of real produced water (PW), generated by the petroleum exploration of the Petrobras plant-Tunisia. Experiments were conducted at different current densities (30, 50 and 100 mA cm(-2)) using the lead dioxide supported on tantalum (Ta/PbO2) and boron-doped diamond (BDD) anodes in an electrolytic batch cell. The electrolytic process was monitored by the chemical oxygen demand (COD) and the residual total petroleum hydrocarbon [TPH] in order to know the feasibility of electrochemical treatment. The characterization and quantification of petroleum wastewater components were performed by gas chromatography mass spectrometry. The COD removal was approximately 85% and 96% using PbO2 and BDD reached after 11 and 7h, respectively. Compared with PbO2, the BDD anode showed a better performance to remove petroleum hydrocarbons compounds from produced water. It provided a higher oxidation rate and it consumed lower energy. However, the energy consumption and process time make useless anodic oxidation for the complete elimination of pollutants from PW. Cytotoxicity has shown that electrochemical oxidation using BDD could be efficiently used to reduce more than 90% of hydrocarbons compounds. All results suggest that electrochemical oxidation could be an effective approach to treat highly concentrated organic pollutants present in the industrial petrochemical wastewater and significantly reduce the cost and time of treatment.

  18. Surface Roughness and Critical Exponent Analyses of Boron-Doped Diamond Films Using Atomic Force Microscopy Imaging: Application of Autocorrelation and Power Spectral Density Functions

    NASA Astrophysics Data System (ADS)

    Gupta, S.; Vierkant, G. P.

    2014-09-01

    The evolution of the surface roughness of growing metal or semiconductor thin films provides much needed information about their growth kinetics and corresponding mechanism. While some systems show stages of nucleation, coalescence, and growth, others exhibit varying microstructures for different process conditions. In view of these classifications, we report herein detailed analyses based on atomic force microscopy (AFM) characterization to extract the surface roughness and growth kinetics exponents of relatively low boron-doped diamond (BDD) films by utilizing the analytical power spectral density (PSD) and autocorrelation function (ACF) as mathematical tools. The machining industry has applied PSD for a number of years for tool design and analysis of wear and machined surface quality. Herein, we present similar analyses at the mesoscale to study the surface morphology as well as quality of BDD films grown using the microwave plasma-assisted chemical vapor deposition technique. PSD spectra as a function of boron concentration (in gaseous phase) are compared with those for samples grown without boron. We find that relatively higher boron concentration yields higher amplitudes of the longer-wavelength power spectral lines, with amplitudes decreasing in an exponential or power-law fashion towards shorter wavelengths, determining the roughness exponent ( α ≈ 0.16 ± 0.03) and growth exponent ( β ≈ 0.54), albeit indirectly. A unique application of the ACF, which is widely used in signal processing, was also applied to one-dimensional or line analyses (i.e., along the x- and y-axes) of AFM images, revealing surface topology datasets with varying boron concentration. Here, the ACF was used to cancel random surface "noise" and identify any spatial periodicity via repetitive ACF peaks or spatially correlated noise. Periodicity at shorter spatial wavelengths was observed for no doping and low doping levels, while smaller correlations were observed for relatively

  19. High quality boron-doped epitaxial layers grown at 200°C from SiF4/H2/Ar gas mixtures for emitter formation in crystalline silicon solar cells

    NASA Astrophysics Data System (ADS)

    Léal, Ronan; Haddad, Farah; Poulain, Gilles; Maurice, Jean-Luc; Roca i Cabarrocas, Pere

    2017-02-01

    Controlling the doping profile in solar cells emitter and front/back surface field is mandatory to reach high efficiencies. In the current state of the art, these doped layers are made by dopant diffusion at around 900°C, which implies potential temperature induced damages in the c-Si absorber and for which a precise control of doping is difficult. An alternative solution based on boron-doped epitaxial silicon layers grown by plasma-enhanced chemical vapor deposition (PECVD) from 200°C using SiF4/H2/Ar/B2H6 chemistry is reported. The structural properties of the doped and undoped epitaxial layers were assessed by spectroscopic ellipsometry (SE), high resolution transmission electron microscopy (HR-TEM) and X-ray diffraction (XRD). The incorporation of boron has been studied via plasma profiling time of flight mass spectrometry (PP-TOFMS) and secondary ion mass spectrometry (SIMS) measurements. The boron-doped epitaxial layers revealed excellent structural and electrical properties even for high carrier concentrations (>1019cm-3). Sheet resistances between 100 and 130 Ω/sq can been obtained depending on the thickness and the doping concentration, which is within the range of targeted values for emitters in c-Si solar cells. Electrochemical capacitance voltage (ECV) revealed a uniform doping profile around 3.1019 cm-3 and by comparing with SIMS measurement a doping efficiency around 50% has been found.

  20. Facile synthesis of boron- and nitride-doped MoS2 nanosheets as fluorescent probes for the ultrafast, sensitive, and label-free detection of Hg(2+).

    PubMed

    Liu, Xiaojia; Li, Liping; Wei, Yuanjie; Zheng, Yizhi; Xiao, Qian; Feng, Bo

    2015-07-07

    Bulk MoS2, a prototypical transition metal chalcogenide material, is an indirect band gap semiconductor with negligible photoluminescence. In this study, we have developed, for the first time, a simple and low-cost synthetic strategy to prepare boron- and nitrogen-doped MoS2 (B,N-MoS2) nanosheets. Through boron and nitrogen doping, the band gap of MoS2 increases from 1.20 eV to 1.61 eV, and the obtained B,N-MoS2 nanosheets exhibit an enhanced fluorescence. The B,N-MoS2 nanosheets can be used as a green and facile sensing platform for label-free detection of Hg(2+) because of their high sensitivity and selectivity toward Hg(2+). In addition, detection can be easily accomplished through one-step rapid (within 2 min) operation, with a limit as low as 1 nM. This study demonstrates that the introduction of boron and nitrogen elements into ultrathin MoS2 nanosheets for enhanced fluorescence properties is feasible through a facile and general preparation strategy and may also offer a unique idea as a potential way to design more efficient MoS2-based sensors and fluorescent materials.

  1. Possible n/p-type conductivity of two-dimensional graphene oxide by boron and nitrogen doping: Evaluated via constrained excitation

    NASA Astrophysics Data System (ADS)

    Wang, Dan; Han, Dong; Li, Xian-Bin; Xie, Sheng-Yi; Chen, Nian-Ke; Tian, Wei Quan; Zhang, Shengbai; Sun, Hong-Bo

    2016-11-01

    As the first-principles calculations using the supercell approximation give widely scattered results in a two-dimensional charged system, making the evaluation of defect ionization energy difficult, here an alternative constrained excitation is applied to overcome this problem for defect analysis. As an example in graphene oxide with 50% oxygen coverage (according to the popular epoxy-chain-plus-hydroxyl-chain model), the structures, stabilities, and electronic properties of nitrogen and boron dopants are investigated. Generally, boron prefers to replace carbon in the sp3 region as an acceptor while nitrogen has a tendency to substitute the sp2 carbon close to the boundary between the sp2 region and the sp3 region as a donor. Their ionization energies are 0.24-0.42 eV for boron and 0.32-0.67 eV for nitrogen. However, a special case of nitrogen doped in the boundary-sp3 carbon can change to be an acceptor with the assistance of its neighboring (epoxy) oxygen "Lift-off," leading to the shallowest ionization energy of 0.12 eV and the best candidate for p-type conductivity. The present study offers the detailed pictures of boron and nitrogen defects in graphene oxide for the potential n- and p-type conductivity.

  2. Brazing graphite to graphite

    DOEpatents

    Peterson, George R.

    1976-01-01

    Graphite is joined to graphite by employing both fine molybdenum powder as the brazing material and an annealing step that together produce a virtually metal-free joint exhibiting properties similar to those found in the parent graphite. Molybdenum powder is placed between the faying surfaces of two graphite parts and melted to form molybdenum carbide. The joint area is thereafter subjected to an annealing operation which diffuses the carbide away from the joint and into the graphite parts. Graphite dissolved by the dispersed molybdenum carbide precipitates into the joint area, replacing the molybdenum carbide to provide a joint of virtually graphite.

  3. Optical Properties of Solid Pseudoisocyanine Films Doped with Cluster Derivatives of Boron Hydrides

    NASA Astrophysics Data System (ADS)

    Shelkovnikov, V. V.; Ivanova, Z. M.; Orlova, N. A.; Volkov, V. V.; Drozdova, M. K.; Myakishev, K. G.; Plekhanov, A. I.

    2004-11-01

    The formation and optical properties of J aggregates of pseudoisocyanine iodide in solid films in the presence of cluster anionic derivatives of boron hydrides and carboranes (B10H{10/2-}, B12H{12/2-}, B20H{18/2-}, [NiIV(1,2-B9C2H11)2]0, 1,2-B9C2H{12/-}, [Co(1,2-B9C2H11)2]-, [Ni(1,2-B9C2H11)2]-, B10H8I{2/2-}, [Sn(1,2-B9C2H11)]0) are studied. It is shown that the addition of anions B10H{10/2-} or B10H8I{2/2-} leads to an efficient formation of stable J aggregates. The addition of carborane complex of nickel [NiIV (1,2-B9C2H11)2]0 also leads to the formation of J aggregates, although less stable ones. Carborane complex of tin [SnII(1,2-B9C2H11)]0 facilitates the formation of a monomeric form of the dye. The remaining compounds yield no distinct pattern of formation of a certain monomeric or J-aggregated film structure. With the aid of the semiempirical AM1 method, the charge distributions in the cation of the dye and anionic derivatives of the boron hydrides are calculated. It is supposed that the bipolar distribution of a negative charge in the B10H{10/2-} anion facilitates the formation of a J aggregate. By addition of salts of organic cations to a film of pseudoisocyanine-closo-hydrodecaborate (PCG), J aggregates with a narrow width of the J peak are obtained. The thermal decay of J aggregates in these films is studied. On the basis of the data obtained (the presence of an isosbestic point upon thermal decomposition of J aggregates and their reaggregation; the narrowing and increasing of the J absorption peak, as well as increasing of luminescence, upon dilution of a J-aggregated PCG film with organic cations; and the bipolar character of the electrostatic interaction of the B10H{10/2-} anion with the dye), it is assumed that the J peak of pseudoisocyanine in the films studied corresponds to the absorption of a dimeric form of the dye.

  4. A rapid and sensitive method for hydroxyl radical detection on a microfluidic chip using an N-doped porous carbon nanofiber modified pencil graphite electrode.

    PubMed

    Ouyang, Jun; Li, Zhong-Qiu; Zhang, Jing; Wang, Chen; Wang, Jiong; Xia, Xing-Hua; Zhou, Guo-Jun

    2014-07-07

    Hydroxyl radicals (˙OH) play an important role in human diseases. Traditional detection methods are time consuming and require expensive instruments. Here, we present a simple and sensitive method for the detection of hydroxyl radicals on a microfluidic chip using an electrochemical technique. Aniline monomer is electrochemically polymerized on the surface of a pencil graphite electrode and carbonized at 800 °C. The resulting N-doped porous carbon nanofiber-modified pencil graphite electrode is embedded into a microfluidic chip directly as a working electrode. 4-Hydroxybenzoic acid (4-HBA) is selected as the trapping agent owing to its unique 3,4-DHBA product and high trapping efficiency. A low detection limit of 1.0 × 10(-6) M is achieved on the microfluidic chip. As a demonstration, the microfluidic chip is successfully utilized for the detection of ˙OH in cigarette smoke. The strong π-π stacking and hydrophobic interactions between the nitrogen-doped carbon materials and the pencil graphite make the modified electrode well-suited for the microfluidic chip.

  5. Degradation of the insecticide propoxur by electrochemical advanced oxidation processes using a boron-doped diamond/air-diffusion cell.

    PubMed

    Guelfi, Diego Roberto Vieira; Gozzi, Fábio; Sirés, Ignasi; Brillas, Enric; Machulek, Amílcar; de Oliveira, Silvio César

    2016-03-17

    A solution with 0.38 mM of the pesticide propoxur (PX) at pH 3.0 has been comparatively treated by electrochemical oxidation with electrogenerated H2O2 (EO-H2O2), electro-Fenton (EF), and photoelectro-Fenton (PEF). The trials were carried out with a 100-mL boron-doped diamond (BDD)/air-diffusion cell. The EO-H2O2 process had the lowest oxidation ability due to the slow reaction of intermediates with (•)OH produced from water discharge at the BDD anode. The EF treatment yielded quicker mineralization due to the additional (•)OH formed between added Fe(2+) and electrogenerated H2O2. The PEF process was the most powerful since it led to total mineralization by the combined oxidative action of hydroxyl radicals and UVA irradiation. The PX decay agreed with a pseudo-first-order kinetics in EO-H2O2, whereas in EF and PEF, it obeyed a much faster pseudo-first-order kinetics followed by a much slower one, which are related to the oxidation of its Fe(II) and Fe(III) complexes, respectively. EO-H2O2 showed similar oxidation ability within the pH range 3.0-9.0. The effect of current density and Fe(2+) and substrate contents on the performance of the EF process was examined. Two primary aromatic products were identified by LC-MS during PX degradation.

  6. Mineralization of the recalcitrant oxalic and oxamic acids by electrochemical advanced oxidation processes using a boron-doped diamond anode.

    PubMed

    Garcia-Segura, Sergi; Brillas, Enric

    2011-04-01

    Oxalic and oxamic acids are the ultimate and more persistent by-products of the degradation of N-aromatics by electrochemical advanced oxidation processes (EAOPs). In this paper, the kinetics and oxidative paths of these acids have been studied for several EAOPs using a boron-doped diamond (BDD) anode and a stainless steel or an air-diffusion cathode. Anodic oxidation (AO-BDD) in the presence of Fe(2+) (AO-BDD-Fe(2+)) and under UVA irradiation (AO-BDD-Fe(2+)-UVA), along with electro-Fenton (EF-BDD), was tested. The oxidation of both acids and their iron complexes on BDD was clarified by cyclic voltammetry. AO-BDD allowed the overall mineralization of oxalic acid, but oxamic acid was removed much more slowly. Each acid underwent a similar decay in AO-BDD-Fe(2+) and EF-BDD, as expected if its iron complexes were not attacked by hydroxyl radicals in the bulk. The faster and total mineralization of both acids was achieved in AO-BDD-Fe(2+)-UVA due to the high photoactivity of their Fe(III) complexes that were continuously regenerated by oxidation of their Fe(II) complexes. Oxamic acid always released a larger proportion of NH(4)(+) than NO(3)(-) ion, as well as volatile NO(x) species. Both acids were independently oxidized at the anode in AO-BDD, but in AO-BDD-Fe(2+)-UVA oxamic acid was more slowly degraded as its content decreased, without significant effect on oxalic acid decay. The increase in current density enhanced the oxidation power of the latter method, with loss of efficiency. High Fe(2+) contents inhibited the oxidation of Fe(II) complexes by the competitive oxidation of Fe(2+) to Fe(3+). Low current densities and Fe(2+) contents are preferable to remove more efficiently these acids by the most potent AO-BDD-Fe(2+)-UVA method.

  7. Boron-doped diamond electrooxidation of ethyl paraben: The effect of electrolyte on by-products distribution and mechanisms.

    PubMed

    Frontistis, Zacharias; Antonopoulou, Maria; Yazirdagi, Melis; Kilinc, Zeynep; Konstantinou, Ioannis; Katsaounis, Alexandros; Mantzavinos, Dionissios

    2016-07-01

    Ethyl paraben (EP), a representative emerging pollutant of the parabens family, was subject to electrochemical oxidation over a boron-doped diamond (BDD) anode. Experiments were carried out in a single-compartment cell at 10-70 mA cm(-2) current density, 200-600 μg L(-1) EP concentration, initial solution pH 3-9 and 0.1 M electrolyte concentration. The degradation rate is favored at increased current densities and in the presence of NaCl as the supporting electrolyte, while the pH effect is inconsiderable. For instance, the first order rate constant for the degradation of 200 μg L(-1) EP at 30 mA cm(-2) was 0.25, 0.1 and 0.07 min(-1) with NaCl, Na2SO4 and HClO4, respectively. Degradation in secondary treated wastewater was faster than in pure water presumably due to the action of chloride ions present in the effluent. Liquid chromatography time-of-flight mass spectrometry (LC-TOF-MS) was employed to determine major transformation by-products (TBPs). The route of EP degradation with Na2SO4 involves hydroxylation and demethylation reactions, signifying the role of electrogenerated hydroxyl radicals in the process. Twenty one TBPs were identified with NaCl as the electrolyte, including several chlorinated and non-chlorinated dimers and trimers; these findings suggest that indirect oxidation mediated by chlorine radicals and other chlorine active species also takes place. In this view, the role of the supporting electrolyte is crucial since it can influence both reaction kinetics and pathways.

  8. Determination of 1-hydroxypyrene in human urine by HPLC with electrochemical detection at a boron-doped diamond film electrode.

    PubMed

    Yosypchuk, Oksana; Barek, Jiří; Vyskočil, Vlastimil

    2012-08-01

    A high-performance liquid chromatographic method with electrochemical detection (HPLC-ED) at a boron-doped diamond film electrode with preliminary separation and preconcentration by solid-phase extraction (SPE) has been developed for the determination of 1-hydroxypyrene (1-HP) in human urine. 1-HP is among the most widely used biomarkers of exposure to polycyclic aromatic hydrocarbons. Optimal HPLC-ED conditions have been found: mobile phase methanol-0.05 mol L(-1) phosphate buffer pH 5.0 (80:20, v/v), detection potential +1,000 mV versus Ag/AgCl (3 mol L(-1) KCl), and flow rate 0.8 mL min(-1). For SPE, LiChrolut(®) RP-18 E cartridges were used. The extraction yield was (87.0 ± 5.8)% (n = 5). The concentration dependence of 1-HP was measured in the concentration range from 0.01 to 10 μmol L(-1) (2.18-2,180 μg L(-1)) using methanolic solutions resulting from the SPE pretreatment of spiked human urine samples. The limit of detection (signal-to-noise ratio 3) and the limit of quantification (signal-to-noise ratio 10) of the biomarker were 0.013 μmol L(-1) (2.84 μg L(-1)) and 0.043 μmol L(-1) (9.39 μg L(-1)), respectively, which is sufficient for its determination in the urine of persons exposed to polycyclic aromatic hydrocarbons.

  9. Determination of parabens in shampoo using high performance liquid chromatography with amperometric detection on a boron-doped diamond electrode.

    PubMed

    Martins, Isarita; Carreira, Franciely Cristiani; Canaes, Larissa S; de Souza Campos Junior, Francisco Alberto; da Silva Cruz, Letícia Maria; Rath, Susanne

    2011-07-15

    Methylparaben (MePa), ethylparaben (EtPa) and propylparaben (PrPa) have been widely used, among others, as chemical preservatives in cosmetics, drugs and foods. As these compounds are linked with allergies, dermatitis and estrogenic properties, it is necessary to control the concentration of these substances in different matrices. The aim of this paper are: to evaluate the electrochemical behavior of parabens on the boron-doped diamond (BDD) electrode and the development of a chromatographic method, with electrochemical detection (HPLC-ED), for determination of parabens in shampoo. A BDD (8000 ppm) electrode was adapted in a thin layer mode analytical cell consisting of a stainless steel and a platinum wire as reference and auxiliary electrodes, respectively. Chromatographic separations were obtained with a reversed phase C8 analytical column and a mobile phase of 0.025 molL(-1) disodium phosphate, pH 7.0, and acetonitrile (40:60, v/v), delivered at a flow rate of 1.0 mL min(-1). Sample preparation was performed by solid phase extraction using C18 cartridges and acetonitrile for elution. Benzylparaben was employed as internal standard. The HPLC-ED method developed, using the BDD electrode, was validated for the determination of parabens in shampoos and presented adequate linearity (>0.999), in the range of 0.0125-0.500% (w/w), detectability 0.01% (w/w), precision (RSD of 2.3-9.8%) and accuracy (93.1-104.4%) and could be applied for routine quality control of shampoos containing MePa, EtPa and PrPa.

  10. Validation of high-performance liquid chromatography-boron-doped diamond detection for assessing hepatic glutathione redox status.

    PubMed

    Park, Hea Jin; Mah, Eunice; Bruno, Richard S

    2010-12-15

    Glutathione redox status is a commonly used oxidative stress biomarker. High-performance liquid chromatography-ultraviolet (HPLC-UV) and HPLC-electrochemical detection (HPLC-ECD) have been used to assess glutathione status but have potential limitations due to challenging sample preparation procedures or electrochemical signal degradation. Thus, this study aimed to validate an HPLC-ECD approach using boron-doped diamond (BDD), a novel electrode material exhibiting excellent electrochemical stability. Liver homogenates from obese (ob/ob) mice and their lean littermates (n=4/genotype) as well as from rats fed high- or low-fat diets (n=8/treatment) were analyzed in parallel by HPLC-BDD and -UV. HPLC-BDD responses for reduced glutathione (GSH) and oxidized glutathione (GSSG) were linear over more than four orders of magnitude at 1475 mV, the optimal oxidation potential. Within- and between-day precision values of GSH, GSSG, and GSH/GSSG were 2.1% to 7.9%, and accuracy values of GSH and GSSG were 96% and 105%, respectively. Electrochemical responses were stable up to 48 h of continuous system use. Using HPLC-BDD and -UV, hepatic GSH, GSSG, and GSH/GSSG from mice (r=0.64-0.94) and rats (r=0.79-0.92) were well correlated (P<0.05), and no significant differences in thiol levels were observed between detection methods. Collectively, our findings support HPLC-BDD as a relatively simple, accurate, and validated approach for evaluating hepatic glutathione redox status.

  11. Improved fiber retention by the use of fillers in graphite fiber/resin matrix composites

    NASA Technical Reports Server (NTRS)

    Gluyas, R. E.; Bowles, K. J.

    1980-01-01

    A variety of matrix fillers were tested for their ability to prevent loss of fiber from graphite fiber/PMR polyimide and graphite fiber/epoxy composites in a fire. The fillers tested included powders of boron, boron carbide lime glass, lead glass, and aluminum. Boron was the most effective and prevented any loss of graphite fiber during burning. Mechanical properties of composites containing boron filler were measured and compared to those of composites containing no filler.

  12. CO catalytic oxidation on Pt-doped single wall boron nitride nanotube: first-principles investigations

    NASA Astrophysics Data System (ADS)

    Abdel Aal, S.

    2016-02-01

    The catalytic oxidation of CO at Pt-doped BNNT (5,5) has been investigated theoretically using density functional theory. The electronic structures and thermochemical properties of CO and O2 that adsorbed on Pt embedded at the B- and N-vacancy sites of BNNTs are analyzed. It is demonstrated that the different BNNT substrates can modify the electronic structure of the Pt catalysts and cause different effects in the catalytic activities. With the N-vacancy (Pt(N)-BNNT), the Pt behaves as a Lewis acid for accepting an electron from the substrate, thus O2 binds stronger than CO molecules, thus alleviating the CO poisoning of the platinum catalysts. Coadsorption of CO and O2 on Pt(N)-BNNT results in additional charge transfer to O2. CO oxidation proceeds via the Eley-Rideal (ER) mechanism entails lower activation barrier and higher reaction rate than that of Langmuir-Hinshelwood (LH) mechanism suggesting the superiority of the ER mechanism for CO oxidation at Pt(N)-BNNT. Therefore, Pt(N)-BNNT might be a good candidate for low-cost, highly active, and stable catalysts for CO oxidation.

  13. A First Principles study on Boron-doped Graphene decorated by Ni-Ti-Mg atoms for Enhanced Hydrogen Storage Performance

    PubMed Central

    Nachimuthu, Santhanamoorthi; Lai, Po-Jung; Leggesse, Ermias Girma; Jiang, Jyh-Chiang

    2015-01-01

    We proposed a new solid state material for hydrogen storage, which consists of a combination of both transition and alkaline earth metal atoms decorating a boron-doped graphene surface. Hydrogen adsorption and desorption on this material was investigated using density functional theory calculations. We find that the diffusion barriers for H atom migration and desorption energies are lower than for the previously designed mediums and the proposed medium can reach the gravimetric capacity of ~6.5 wt % hydrogen, which is much higher than the DOE target for the year 2015. Molecular Dynamics simulations show that metal atoms are stably adsorbed on the B doped graphene surface without clustering, which will enhance the hydrogen storage capacity. PMID:26577659

  14. In situ fabrication of three-dimensional nitrogen and boron co-doped porous carbon nanofibers for high performance lithium-ion batteries

    NASA Astrophysics Data System (ADS)

    Zhang, Lijun; Xia, Guanglin; Guo, Zaiping; Sun, Dalin; Li, Xingguo; Yu, Xuebin

    2016-08-01

    This paper reports the fabrication of three-dimensional porous carbon nanofibers network with high doping level of nitrogen (N, 5.17 at.%) and boron (B, 6.87 at.%) through a general electrospinning strategy followed by a calcination process. The employed ammonia borane (NH3BH3, denote as AB) not only functions as a porogen reagent to generate porous structures but also as the heteroatoms source to induce N and B co-doping. Such highly unique nanoarchitectures offer remarkably improved Li storage performance including high reversible capacity (∼910 mAh g-1 at a current density of 100 mA g-1) with good cycling and rate performances.

  15. Reactivity of boron- and nitrogen-doped carbon nanotubes functionalized by (Pt, Eu) atoms toward O2 and CO: A density functional study

    NASA Astrophysics Data System (ADS)

    Abdel Aal, S.

    2016-01-01

    The adsorption behavior and electronic properties of CO and O2 molecules at the supported Pt and Eu atoms on (5,5) armchair SWCNT have been systematically investigated within density functional theory (DFT). Fundamental aspects such as adsorption energy, natural bond orbital (NBO), charge transfer, frontier orbitals and the projected density of states (PDOS) are elucidated to analyze the adsorption properties of CO and O2 molecules. The results reveal that B- and N-doping CNTs can enhance the binding strength and catalytic activity of Pt (Eu) anchored on the doped-CNT, where boron-doping is more effective. The electronic structures of supported metal are strongly influenced by the presence of gases. After adsorption of CO and O2, the changes in binding energy, charge transfer and conductance may lead to the different response in the metal-doped CNT-based sensors. It is expected that these results could provide helpful information for the design and fabrication of the CO and O2 sensing devices. The high catalytic activity of Pt supported at doped-CNT toward the interaction with CO and O2 may be attributed to the electronic resonance particularly among Pt-5d, CO-2π* and O2-2π* antibonding orbitals. In contrast to the supported Eu at doped-CNT, the Eu atom becomes more positively charged, which leads to weaken the CO adsorption and promote the O2 adsorption, consequently enhancing the activity for CO oxidation and alleviating the CO poisoning of the europium catalysts. A notable orbital hybridization and electrostatic interaction between these two species in adsorption process being an evidence of strong interaction. The electronic structure of O2 adsorbed on Eu-doped CNT resembles that of O2-, therefore the transferred charge weakens the O-O bonds and facilitates the dissociation process, which is the precondition for the oxygen reduction reaction (ORR).

  16. Carrier transport properties of the Group-IV ferromagnetic semiconductor Ge{sub 1-x}Fe{sub x} with and without boron doping

    SciTech Connect

    Ban, Yoshisuke Wakabayashi, Yuki; Akiyama, Ryota; Nakane, Ryosho; Tanaka, Masaaki

    2014-09-15

    We have investigated the transport and magnetic properties of group-IV ferromagnetic semiconductor Ge{sub 1-x}Fe{sub x} films (x = 1.0 and 2.3%) with and without boron doping grown by molecular beam epitaxy (MBE). In order to accurately measure the transport properties of 100-nm-thick Ge{sub 1-x}Fe{sub x} films, (001)-oriented silicon-on-insulator (SOI) wafers with an ultra-thin Si body layer (∼5 nm) were used as substrates. Owing to the low Fe content, the hole concentration and mobility in the Ge{sub 1-x}Fe{sub x} films were exactly estimated by Hall measurements because the anomalous Hall effect in these films was found to be negligibly small. By boron doping, we increased the hole concentration in Ge{sub 1-x}Fe{sub x} from ∼10{sup 18} cm{sup −3} to ∼10{sup 20} cm{sup −3} (x = 1.0%) and to ∼10{sup 19} cm{sup −3} (x = 2.3%), but no correlation was observed between the hole concentration and magnetic properties. This result presents a contrast to the hole-induced ferromagnetism in III-V ferromagnetic semiconductors.

  17. Boron-Doped Diamond Microelectrodes Reveal Reduced Serotonin Uptake Rates in Lymphocytes from Adult Rhesus Monkeys Carrying the Short Allele of the 5-HTTLPR

    PubMed Central

    2009-01-01

    Uptake resolved by high-speed chronoamperometry on a second-by-second basis has revealed important differences in brain serotonin transporter function associated with genetic variability. Here, we use chronoamperometry to investigate variations in serotonin transport in primary lymphocytes associated with the rhesus serotonin transporter gene-linked polymorphism (rh5-HTTLPR), a promoter polymorphism whose orthologues occur only in higher order primates including humans. Serotonin clearance by lymphocytes is Na+-dependent and inhibited by the serotonin-selective reuptake inhibitor paroxetine (Paxil), indicative of active uptake by serotonin transporters. Moreover, reductions in serotonin uptake rates are evident in lymphocytes from monkeys with one or two copies of the short ‘s’ allele of the rh5-HTTLPR (s/s < s/l < l/l). These findings illustrate that rh5-HTTLPR-related alterations in serotonin uptake are present during adulthood in peripheral blood cells natively expressing serotonin transporters. Moreover, they suggest that lymphocytes can be used as peripheral biomarkers for investigating genetic or pharmacologic alterations in serotonin transporter function. Use of boron-doped diamond microelectrodes for measuring serotonin uptake, in contrast to carbon fiber microelectrodes used previously in the brain, enabled these high-sensitivity and high-resolution measurements. Boron-doped diamond microelectrodes show excellent signal-to-noise and signal-to-background ratios due mainly to low background currents and are highly resistant to fouling when exposed to lymphocytes or high concentrations of serotonin. PMID:20352073

  18. Heteroatom Nitrogen- and Boron-Doping as a Facile Strategy to Improve Photocatalytic Activity of Standalone Reduced Graphene Oxide in Hydrogen Evolution.

    PubMed

    Putri, Lutfi K; Ng, Boon-Junn; Ong, Wee-Jun; Lee, Hing Wah; Chang, Wei Sea; Chai, Siang-Piao

    2017-02-08

    Owing to its superior properties and versatility, graphene has been proliferating the energy research scene in the past decade. In this contribution, nitrogen (N-) and boron (B-) doped reduced graphene oxide (rGO) variants were investigated as a sole photocatalyst for the green production of H2 and their properties with respect to photocatalysis were elucidated for the first time. N- and B-rGOs were facilely prepared via the pyrolysis of graphene oxide with urea and boron anhydride as their respective dopant source. The pyrolysis temperature was varied (600-800 °C for N-rGO and 800-1000 °C for B-rGO) in order to modify dopant loading percentage (%) which was found to be influential to photocatalytic activity. N-rGO600 (8.26 N at%) and B-rGO1000 (3.59 B at%), which holds the highest at% from each of their party, exhibited the highest H2 activity. Additionally, the effects of the nature of N and B bonding configuration in H2 photoactivity were also examined. This study demonstrates the importance of dopant atoms in graphene, rendering doping as an effective strategy to bolster photocatalytic activity for standalone graphene derivative photocatalysts.

  19. DFT study of the adsorption of 2,3,7,8-tetrachlorodibenzo-p-dioxin on pristine and Ni-doped boron nitride nanotubes.

    PubMed

    Wang, Ruoxi; Zhang, Dongju; Liu, Chengbu

    2017-02-01

    Polychlorinated dibenzo-p-dioxins (PCDDs) and polychlorinated dibenzofurans (PCDFs) are highly toxic to humans and the environment. Developing efficient methods to detect or remove these pollutants is particularly important and urgent. Boron nitride nanotubes (BNNTs) with low dimension and high surface-to-volume ratio might be one of promising materials for the adsorption of PCDD/Fs. Here we present a density functional theory (DFT) study on the interaction of the pristine and Ni doped (8,0) single-walled BNNTs with 2,3,7,8-tetrachlorodibenzo-p-dioxin (TCDD), the most toxic congener among PCDD/F family. The calculated results show that the pristine BNNT intrinsically interacts with TCDD via physisorption with π-π stacking interaction, in contrast, the Ni-doped BNNT presents much higher reactivities toward TCDD. The impurity Ni atom plays a crucial role for capturing TCDD molecule. We also find that the Ni doping introduces the local electronic states within the band gap of the BNNT and induces magnetism in the doped systems. The present results are expected to provide useful guidance for the potential application of BNNTs as adsorption materials for detecting or removing dioxin pollutants.

  20. Undoped and boron doped diamond nanoparticles as platinum and platinum-ruthenium catalyst support for direct methanol fuel cell application

    NASA Astrophysics Data System (ADS)

    La Torre Riveros, Lyda

    Nanoparticular diamond is a promising material that can be used as a robust and chemically stable catalytic support. It has been studied and characterized physically and electrochemically, in its powder and thin film forms. This thesis work intends to demonstrate that undoped diamond nanoparticles (DNPs) and boron-doped diamond nanoparticles (BDDNPs) can be used as an electrode and a catalytic support material for platinum and ruthenium catalysts. The electrochemical properties of diamond nanoparticle electrodes, fabricated using the ink paste method, were investigated. As an initial step, we carried out chemical purification of commercially available undoped DNPs by refluxing in aqueous HNO3 as well as of BDDNPs which were doped through a collaborative work with the University of Missouri. The purified material was characterized by spectroscopic and surface science techniques. The reversibility of reactions such as ferricyanide/ferrocyanide (Fe(CN) 63-/Fe(CN)64-) and hexaamineruthenium (III) chloride complexes as redox probes were evaluated by cyclic voltammetry at the undoped DNPs and BDDNPs surface. These redox probes showed limited peak currents and presented linear relationships between current (i) and the square root of the potential scan rate (v1/2). However, compared to conventional electrodes, the peak currents were smaller. BDDNPs show an improvement in charge transfer currents when compared to undoped DNPs. Platinum and ruthenium nanoparticles were chemically deposited on undoped DNPs and BDDNPs through the use of the excess of a mild reducing agent such NaBH4. In order to improve the nanoparticle dispersion sodium dodecyl benzene sulfonate (SDBS), a surfactant agent, was used. Percentages of platinum and ruthenium metals were varied as well as the stoichiometric amount of the reducing agent to determine adequate parameters for optimum performance in methanol oxidation. Both before and after the reducing process the samples were characterized by scanning

  1. Strain and Electrical Characterization of Boron-Doped SiGeC Layers Grown by Chemical Vapor Deposition

    NASA Astrophysics Data System (ADS)

    Hållstedt, J.; Parent, A.; Zhang, S.-L.; Östling, M.; Radamson, H. H.

    2004-01-01

    Incorporation, induced strain and electrical properties of boron and carbon in Si1 x yGexCy epitaxial layers (x = 0.23 and 0.28 with y = 0 and 0.005) grown by chemical vapour deposition (CVD) have been studied. The boron concentration in the epitaxial layers was in the range of 3 × 1018 1 × 1021cm 3. The growth rate enhanced weakly by increasing boron partial pressure up to 0.002 mtorr corresponding to 2 × 1019cm 3 where a significant increase in deposition rate was observed. In SiGeC layers, the active boron concentration was obtained from the strain compensation amount. It was also found that the boron atoms have a tendency to locate at substitutional sites more preferentially compared to carbon. The incorporation of boron in SiGeC layers was clearly improved in the range 2 × 1019 3 × 1020cm 3. These investigations also enabled an estimation of the Hall scattering factor of the SiGeC layers. A comparison between our results with the previous theoretical calculations showed a good agreement. This created the possibility to evaluate the drift mobility in our samples.

  2. Nitrogen-doped carbon with a high degree of graphitization derived from biomass as high-performance electrocatalyst for oxygen reduction reaction

    NASA Astrophysics Data System (ADS)

    Zhao, Jujiao; Liu, Yanming; Quan, Xie; Chen, Shuo; Yu, Hongtao; Zhao, Huimin

    2017-02-01

    It is of great interest to develop metal-free electrocatalysts derived from cheap and environmental friendly biomass for oxygen reduction reaction (ORR). Here we report a facile method to prepare graphene-like N-doped carbons with a high degree of graphitization and large surface area using chitosan as precursor and FeCl3 as soft template. The graphitization degree, surface area and the N species can be simply adjusted by controlling the annealing temperature. The soft template induced sample annealed at 800 °C (STS800) exhibits more positive onset potential than the samples annealed at 600 °C and 1000 °C (-0.08 V compared to -0.12 V and -0.15 V), which demonstrates that all of the high degree of graphitization, large surface area and the high percentages of pyridinic-N and graphitic-N play curial roles in the good ORR activity. The value of onset potential for STS800 is just 25 mV negative than that for Pt/C (-0.08 V to -0.055 V) and the ORR current density at merely -0.3 V for STS800 (-2.16 mA cm-2) is larger than that for Pt/C (-2.12 mA cm-2), which indicates its superior ORR activity even compared to Pt/C. Besides, the current for STS800 retains 95% at -0.2 V in 30000 s while that for Pt/C just retains 88%, which reveals its longer durability. With the addition of 3 M methanol, the CV curve of STS800 shows no noticeable current attenuation, indicating its good methanol tolerance. The excellent ORR activity, good methanol tolerance, and long durability demonstrate that STS800 could be a promising alternative for costly Pt-based electrocatalysts.

  3. Nitrogen-doped Co/Co9S8/partly-graphitized carbon as durable catalysts for oxygen reduction in microbial fuel cells

    NASA Astrophysics Data System (ADS)

    Li, Rui; Dai, Ying; Chen, Baibing; Zou, Jinlong; Jiang, BaoJiang; Fu, Honggang

    2016-03-01

    Durability of catalysts for oxygen reduction reaction (ORR) is the key factor for governing the performance of microbial fuel cells (MFCs). The cobalt (Co) chelated polyaniline (PANI) is used as the nitrogen and carbon sources to prepare the N-doped Co/Co9S8/partly-graphitized carbon (Co/Co9S8/NPGC) catalysts. Structure-activity correlations for Co/Co9S8/NPGC are explored by tuning the heating temperature (600-1000 °C) to investigate how the active components (Co/Co9S8) and N-doped functionalities (N-species) influence the ORR activity. As temperature increases, the gradual crystallization of Co originating from the reduction of Co9S8 is conducted to form the Co/Co9S8 heterojunction. MFCs with Co/Co9S8/NPGC (800 °C) cathode obtain the highest power density (1156 mW m-2) and the lowest charge transfer resistance (11.1 Ω) after 75 d running, which are better than commercial Pt/C (10 wt.%). Although the sole Co9S8 plays a limited role in ORR, the resulting Co/Co9S8 is found to be indispensable to achieve high activity and durability in MFCs cathodes. The dominant ORR pathways of Co/Co9S8/NPGC (800 and 900 °C) are the four-electron O2 reduction, which are attributed to the co-existence of pyridinic N, graphitic N and Co-Nx species. These new N-doped metal sulfide/PGC composites show promise for applications in MFCs.

  4. Fillers for improved graphite fiber retention by polymer matrix composites

    NASA Technical Reports Server (NTRS)

    House, E. E.; Sheppard, C. H.

    1981-01-01

    The results of a program designed to determine the extent to which elemental boron and boron containing fillers added to the matrix resin of graphite/epoxy composites prevent the release of graphite fibers when the composites are exposed to fire and impact conditions are described. The fillers evaluated were boron, boron carbide and aluminum boride. The conditions evaluated were laboratory simulations of those that could exist in the event of an aircraft crash and burn situation. The baseline (i.e., unfilled) laminates evaluated were prepared from commercially available graphite/epoxy. The baseline and filled laminates' mechanical properties, before and after isothermal and humidity aging, also were compared. It was found that a small amount of graphite fiber was released from the baseline graphite/epoxy laminates during the burn and impact conditions used in this program. However, the extent to which the fibers were released is not considered a severe enough problem to preclude the use of graphite reinforced composites in civil aircraft structure. It also was found that the addition of boron and boron containing fillers to the resin matrix eliminated this fiber release. Mechanical properties of laminates containing the boron and boron containing fillers were lower than those of the baseline laminates. These property degradations for two systems: boron (5 micron) at 2.5 percent filler loading, and boron (5 micron) at 5.0 percent filler loading do not appear severe enough to preclude their use in structural composite applications.

  5. Electrical and photocatalytic properties of boron-doped ZnO nanostructure grown on PET-ITO flexible substrates by hydrothermal method.

    PubMed

    Wang, Wei; Ai, Taotao; Yu, Qi

    2017-02-13

    Boron-doped zinc oxide sheet-spheres were synthesized on PET-ITO flexible substrates using a hydrothermal method at 90 °C for 5 h. The results of X-ray diffraction and X-ray photoelectron spectroscopy indicated that the B atoms were successfully doped into the ZnO lattice, the incorporation of B led to an increase in the lattice constant of ZnO and a change in its internal stress. The growth mechanism of pure ZnO nanorods and B-doped ZnO sheet-spheres was specifically investigated. The as-prepared BZO/PET-ITO heterojunction possessed obvious rectification properties and its positive turn-on voltage was 0.4 V. The carrier transport mechanisms involved three models such as hot carrier tunneling theory, tunneling recombination, and series-resistance effect were explored. The BZO/PET-ITO nanostructures were more effective than pure ZnO to degrade the RY 15, and the degradation rate reached 41.45%. The decomposition process with BZO nanostructure followed first-order reaction kinetics. The photocurrent and electrochemical impedance spectroscopy revealed that the B-doping could promote the separation of photo-generated electron-hole pairs, which was beneficial to enhance the photocatalytic activity. The photocurrent density of B-doped and pure ZnO/PET-ITO were 0.055 mA/cm(2) and 0.016 mA/cm(2), respectively. The photocatalytic mechanism of the sample was analyzed by the energy band theory.

  6. Electrical and photocatalytic properties of boron-doped ZnO nanostructure grown on PET–ITO flexible substrates by hydrothermal method

    PubMed Central

    Wang, Wei; Ai, Taotao; Yu, Qi

    2017-01-01

    Boron-doped zinc oxide sheet-spheres were synthesized on PET–ITO flexible substrates using a hydrothermal method at 90 °C for 5 h. The results of X-ray diffraction and X-ray photoelectron spectroscopy indicated that the B atoms were successfully doped into the ZnO lattice, the incorporation of B led to an increase in the lattice constant of ZnO and a change in its internal stress. The growth mechanism of pure ZnO nanorods and B-doped ZnO sheet-spheres was specifically investigated. The as-prepared BZO/PET–ITO heterojunction possessed obvious rectification properties and its positive turn-on voltage was 0.4 V. The carrier transport mechanisms involved three models such as hot carrier tunneling theory, tunneling recombination, and series-resistance effect were explored. The BZO/PET–ITO nanostructures were more effective than pure ZnO to degrade the RY 15, and the degradation rate reached 41.45%. The decomposition process with BZO nanostructure followed first-order reaction kinetics. The photocurrent and electrochemical impedance spectroscopy revealed that the B-doping could promote the separation of photo-generated electron-hole pairs, which was beneficial to enhance the photocatalytic activity. The photocurrent density of B-doped and pure ZnO/PET–ITO were 0.055 mA/cm2 and 0.016 mA/cm2, respectively. The photocatalytic mechanism of the sample was analyzed by the energy band theory. PMID:28211923

  7. Electrical and photocatalytic properties of boron-doped ZnO nanostructure grown on PET–ITO flexible substrates by hydrothermal method

    NASA Astrophysics Data System (ADS)

    Wang, Wei; Ai, Taotao; Yu, Qi

    2017-02-01

    Boron-doped zinc oxide sheet-spheres were synthesized on PET–ITO flexible substrates using a hydrothermal method at 90 °C for 5 h. The results of X-ray diffraction and X-ray photoelectron spectroscopy indicated that the B atoms were successfully doped into the ZnO lattice, the incorporation of B led to an increase in the lattice constant of ZnO and a change in its internal stress. The growth mechanism of pure ZnO nanorods and B-doped ZnO sheet-spheres was specifically investigated. The as-prepared BZO/PET–ITO heterojunction possessed obvious rectification properties and its positive turn-on voltage was 0.4 V. The carrier transport mechanisms involved three models such as hot carrier tunneling theory, tunneling recombination, and series-resistance effect were explored. The BZO/PET–ITO nanostructures were more effective than pure ZnO to degrade the RY 15, and the degradation rate reached 41.45%. The decomposition process with BZO nanostructure followed first-order reaction kinetics. The photocurrent and electrochemical impedance spectroscopy revealed that the B-doping could promote the separation of photo-generated electron-hole pairs, which was beneficial to enhance the photocatalytic activity. The photocurrent density of B-doped and pure ZnO/PET–ITO were 0.055 mA/cm2 and 0.016 mA/cm2, respectively. The photocatalytic mechanism of the sample was analyzed by the energy band theory.

  8. Co-reactant-on-Demand ECL: Electrogenerated Chemiluminescence by the in Situ Production of S2O8(2-) at Boron-Doped Diamond Electrodes.

    PubMed

    Irkham; Watanabe, Takeshi; Fiorani, Andrea; Valenti, Giovanni; Paolucci, Francesco; Einaga, Yasuaki

    2016-12-07

    A novel co-reactant-free electrogenerated chemiluminescence (ECL) system is developed where Ru(bpy)3(2+) emission is obtained on boron-doped diamond (BDD) electrodes. The method exploits the unique ability of BDD to operate at very high oxidation potential in aqueous solutions and to promote the conversion of inert SO4(2-) into the reactive co-reactant S2O8(2-). This novel procedure is rather straightforward, not requiring any particular electrode geometry, and since the co-reactant is only generated in situ, the interference with biological samples is minimized. The underlying mechanism is similar to that of the Ru(bpy)3(2+)/S2O8(2-) system; however, the intensity of the emitted signal increases linearly with [SO4(2-)] up to ∼0.6 M, with possible implications for analytical uses of the proposed procedure.

  9. Bulk-bronzied graphites for plasma-facing components in ITER (International Thermonuclear Experimental Reactor)

    SciTech Connect

    Hirooka, Y.; Conn, R.W.; Doerner, R.; Khandagle, M. . Inst. of Plasma and Fusion Research); Causey, R.; Wilson, K. ); Croessmann, D.; Whitley, J. ); Holland, D.; Smolik, G. ); Matsuda, T.; Sogabe, T. (Toyo Tanso Co. Ltd., O

    1990-06-01

    Newly developed bulk-boronized graphites and boronized C-C composites with a total boron concentration ranging from 1 wt % to 30 wt % have been evaluated as plasma-facing component materials for the International Thermonuclear Experimental Reactor (ITER). Bulk-boronized graphites have been bombarded with high-flux deuterium plasmas at temperatures between 200 and 1600{degree}C. Plasma interaction induced erosion of bulk-boronized graphites is observed to be a factor of 2--3 smaller than that of pyrolytic graphite, in regimes of physical sputtering, chemical sputtering and radiation enhanced sublimation. Postbombardment thermal desorption spectroscopy indicates that bulk-boronized graphites enhance recombinative desorption of deuterium, which leads to a suppression of the formation of deuterocarbon due to chemical sputtering. The tritium inventory in graphite has been found to decrease by an order of magnitude due to 10 wt % bulk-boronization at temperatures above 1000{degree}C. The critical heat flux to induce cracking for bulk-boronized graphites has been found to be essentially the same as that for non-boronized graphites. Also, 10 wt % bulk-boronization of graphite hinders air oxidation nearly completely at 800{degree}C and reduces the steam oxidation rate by a factor of 2--3 at around 1100 and 1350{degree}C. 38 refs., 5 figs.

  10. Mercury-free sono-electroanalytical detection of lead in human blood by use of bismuth-film-modified boron-doped diamond electrodes.

    PubMed

    Kruusma, Jaanus; Banks, Craig E; Compton, Richard G

    2004-06-01

    We report the electroanalytical determination of lead by anodic stripping voltammetry at in-situ-formed, bismuth-film-modified, boron-doped diamond electrodes. Detection limits in 0.1 mol L(-1) nitric acid solution of 9.6 x 10(-8) mol L(-1) (0.2 ppb) and 1.1 x 10(-8) mol L(-1) (2.3 ppb) were obtained after 60 and 300 s deposition times, respectively. An acoustically assisted deposition procedure was also investigated and found to result in improved limits of detection of 2.6 x 10(-8) mol L(-1) (5.4 ppb) and 8.5 x 10(-10) mol L(-1) (0.18 ppb) for 60 and 300 s accumulation times, respectively. Furthermore, the sensitivity obtained under quiescent and insonated conditions increased from 5.5 (quiescent) to 76.7 A mol(-1) L (insonated) for 60 s accumulation and from 25.8 (quiescent) to 317.6 A mol(-1) L (insonated) for 300 s accumulation. Investigation of the use of ultrasound with diluted blood revealed detection limits of the order of 10(-8) mol L(-1) were achievable with excellent inter- and intra-reproducibility and sensitivity of 411.9 A mol(-1) L. For the first time, electroanalytical detection of lead in diluted blood is shown to be possible by use of insonated in-situ-formed bismuth-film-modified boron-doped diamond electrodes. This method is a rapid, sensitive, and non-toxic means of clinical sensing of lead in whole human blood.

  11. Electrochemical inactivation of cyanobacteria and microcystin degradation using a boron-doped diamond anode - A potential tool for cyanobacterial bloom control.

    PubMed

    Meglič, Andrej; Pecman, Anja; Rozina, Tinkara; Leštan, Domen; Sedmak, Bojan

    2017-03-01

    Cyanobacterial blooms are global phenomena that can occur in calm and nutrient-rich (eutrophic) fresh and marine waters. Human exposure to cyanobacteria and their biologically active products is possible during water sports and various water activities, or by ingestion of contaminated water. Although the vast majority of harmful cyanobacterial products are confined to the interior of the cells, these are eventually released into the surrounding water following natural or artificially induced cell death. Electrochemical oxidation has been used here to damage cyanobacteria to halt their proliferation, and for microcystin degradation under in-vitro conditions. Partially spent Jaworski growth medium with no addition of supporting electrolytes was used. Electrochemical treatment resulted in the cyanobacterial loss of cell-buoyancy regulation, cell proliferation arrest, and eventual cell death. Microcystin degradation was studied separately in two basic modes of treatment: batch-wise flow, and constant flow, for electrolytic-cell exposure. Batch-wise exposure simulates treatment under environmental conditions, while constant flow is more appropriate for the study of boron-doped diamond electrode efficacy under laboratory conditions. The effectiveness of microcystin degradation was established using high-performance liquid chromatography-photodiode array detector analysis, while the biological activities of the products were estimated using a colorimetric protein phosphatase-1 inhibition assay. The results indicate potential for the application of electro-oxidation methods for the control of bloom events by taking advantage of specific intrinsic ecological characteristics of bloom-forming cyanobacteria. The applicability of the use of boron-doped diamond electrodes in remediation of water exposed to cyanobacteria bloom events is discussed.

  12. A simple synthesis of nitrogen doped porous graphitic carbon: Electrochemical determination of paracetamol in presence of ascorbic acid and p-aminophenol.

    PubMed

    Biswas, Sudip; Chakraborty, Dipanjan; Das, Rashmita; Bandyopadhyay, Rajib; Pramanik, Panchanan

    2015-08-26

    Graphite paste electrode modified with nitrogen doped porous carbon (NDPC) is used for the detections of paracetamol (PCM), ascorbic acid (AA) and p-aminophenol (PAP) at relatively low concentration. NDPC is synthesized by direct carbonization of Zn(OAc)2 incorporated melamine-formaldehyde resin microsphere. The NDPC shows small pore diameters centered at 3.14 nm and 8.12 nm and has a pseudo graphitic structure with reasonable porous matrix. The lower limit of detections (S/N = 3) for PCM, AA, and PAP are found to be 30 nM, 720 nM and 10 nM respectively. Under optimized experimental condition, the linear ranges of determination for PCM and AA are 1-400 μM, 10-2700 μM respectively in mixture. Similarly for PCM and PAP mixture, the linear ranges of determination are found to be 1-90 μM. It is also used for the analysis of urine and pharmaceutical products with better sensitivity.

  13. First principle studies of doping effects on the electronic and geometric structures of graphitic C3N4

    NASA Astrophysics Data System (ADS)

    Zuluaga, Sebastian; Stolbov, Sergey

    2013-03-01

    Layered carbon nitride g-C3N4 is a promising material as a photo-anode for the H production from water. By doping, the band gap (2.7 eV) can be tuned to the value optimal for efficient absorption of visible light irradiation. We present here our first principle computational study of the effects of doping with B, P and S on the geometric and electronic structures of g-C3N4 and compare them to experimental results. We have evaluated within density functional theory the energetics of various doping scenarios in terms of both thermodynamics and kinetics, and selected the energetically most favorable structures. Our calculations reveal important details of valence charge density redistribution upon the doping. The doping effect on the electronic density of states (DOS), in particular on band gap width, has been evaluated using an accurate GW method. We find the DOS to strongly depend on the doping geometry. The detailed analysis of the projected DOS provides significant insight into the mechanism underlying modification of the electronic structure upon doping.

  14. Coatings for graphite fibers

    NASA Technical Reports Server (NTRS)

    Galasso, F. S.; Scola, D. A.; Veltri, R. D.

    1980-01-01

    Graphite fibers released from composites during burning or an explosion caused shorting of electrical and electronic equipment. Silicon carbide, silica, silicon nitride and boron nitride were coated on graphite fibers to increase their electrical resistances. Resistances as high as three orders of magnitude higher than uncoated fiber were attained without any significant degradation of the substrate fiber. An organo-silicone approach to produce coated fibers with high electrical resistance was also used. Celion 6000 graphite fibers were coated with an organo-silicone compound, followed by hydrolysis and pyrolysis of the coating to a silica-like material. The shear and flexural strengths of composites made from high electrically resistant fibers were considerably lower than the shear and flexural strengths of composites made from the lower electrically resistant fibers. The lower shear strengths of the composites indicated that the coatings on these fibers were weaker than the coating on the fibers which were pyrolyzed at higher temperature.

  15. Precipitation control and activation enhancement in boron-doped p{sup +}-BaSi{sub 2} films grown by molecular beam epitaxy

    SciTech Connect

    Khan, M. Ajmal; Nakamura, K.; Du, W.; Toko, K.; Usami, N.; Suemasu, T.

    2014-06-23

    Precipitation free boron (B)-doped as-grown p{sup +}-BaSi{sub 2} layer is essential for the BaSi{sub 2} p-n junction solar cells. In this article, B-doped p-BaSi{sub 2} layers were grown by molecular beam epitaxy on Si(111) substrates, and the influence of substrate growth temperature (T{sub S}) and B temperature (T{sub B}) in the Knudsen cell crucible were investigated on the formation of B precipitates and the activation efficiency. The hole concentration, p, reached 1.0 × 10{sup 19 }cm{sup −3} at room temperature for T{sub S} = 600 and T{sub B} = 1550 °C. However, the activation rate of B was only 0.1%. Furthermore, the B precipitates were observed by transmission electron microscopy (TEM). When the T{sub S} was raised to 650 °C and the T{sub B} was decreased to 1350 °C, the p reached 6.8 × 10{sup 19 }cm{sup −3}, and the activation rate increased to more than 20%. No precipitation of B was also confirmed by TEM.

  16. Boron, bismuth co-doping of gallium arsenide and other compounds for photonic and heterojunction bipolar transistor devices

    DOEpatents

    Mascarenhas, Angelo

    2015-07-07

    Isoelectronic co-doping of semiconductor compounds and alloys with acceptors and deep donors is sued to decrease bandgap, to increase concentration of the dopant constituents in the resulting alloys, and to increase carrier mobilities lifetimes. For example, Group III-V compounds and alloys, such as GaAs and GaP, are isoelectronically co-doped with, for example, B and Bi, to customize solar cells, and other semiconductor devices. Isoelectronically co-doped Group II-VI compounds and alloys are also included.

  17. Catalyst-free synthesis of nitrogen-doped graphene via thermal annealing graphite oxide with melamine and its excellent electrocatalysis.

    PubMed

    Sheng, Zhen-Huan; Shao, Lin; Chen, Jing-Jing; Bao, Wen-Jing; Wang, Feng-Bin; Xia, Xing-Hua

    2011-06-28

    The electronic and chemical properties of graphene can be modulated by chemical doping foreign atoms and functional moieties. The general approach to the synthesis of nitrogen-doped graphene (NG), such as chemical vapor deposition (CVD) performed in gas phases, requires transitional metal catalysts which could contaminate the resultant products and thus affect their properties. In this paper, we propose a facile, catalyst-free thermal annealing approach for large-scale synthesis of NG using low-cost industrial material melamine as the nitrogen source. This approach can completely avoid the contamination of transition metal catalysts, and thus the intrinsic catalytic performance of pure NGs can be investigated. Detailed X-ray photoelectron spectrum analysis of the resultant products shows that the atomic percentage of nitrogen in doped graphene samples can be adjusted up to 10.1%. Such a high doping level has not been reported previously. High-resolution N1s spectra reveal that the as-made NG mainly contains pyridine-like nitrogen atoms. Electrochemical characterizations clearly demonstrate excellent electrocatalytic activity of NG toward the oxygen reduction reaction (ORR) in alkaline electrolytes, which is independent of nitrogen doping level. The present catalyst-free approach opens up the possibility for the synthesis of NG in gram-scale for electronic devices and cathodic materials for fuel cells and biosensors.

  18. Influence of boron doping on magnetic properties and microwave characteristics of MnIr/FeCoB multilayers

    SciTech Connect

    Phuoc, Nguyen N.; Ong, C. K.

    2012-04-15

    A detailed investigation of the influence of B doping on the magnetic properties and high frequency characteristics of FeCoB/MnIr multilayered thin films was carried out. Exchange bias was found to decrease monotonically with B doping possibly due to less favorable of AF phase of MnIr in the samples with rich B concentration. However, with small amount of doping up to 9% of B concentration, the MnIr fcc (111) peaks become more prominent and the real part of permeability enhanced. Our results suggest no correlation between the structural phase of MnIr and the exchange bias. Also, the influences of B doping on several static and dynamic parameters, such as rotational magnetic anisotropy field, coercivity, saturation magnetization, resonance frequency, and effective damping factor are presented and discussed. Our results support the claim that the coercivity enhancement and the arising of rotational anisotropy may have the same physical origin.

  19. From Quasi-Planar B56 to Penta-Ring Tubular Ca©B56: Prediction of Metal-Stabilized Ca©B56 as the Embryo of Metal-Doped Boron α-Nanotubes

    NASA Astrophysics Data System (ADS)

    Tian, Wen-Juan; Chen, Qiang; Tian, Xin-Xin; Mu, Yue-Wen; Lu, Hai-Gang; Li, Si-Dian

    2016-11-01

    Motifs of planar metalloborophenes, cage-like metalloborospherenes, and metal-centered double-ring tubular boron species have been reported. Based on extensive first-principles theory calculations, we present herein the possibility of doping the quasi-planar C2v B56 (A-1) with an alkaline-earth metal to produce the penta-ring tubular Ca©B56 (B-1) which is the most stable isomer of the system obtained and can be viewed as the embryo of metal-doped (4,0) boron α-nanotube Ca©BNT(4,0) (C-1). Ca©BNT(4,0) (C-1) can be constructed by rolling up the most stable boron α-sheet and is predicted to be metallic in nature. Detailed bonding analyses show that the highly stable planar C2v B56 (A-1) is the boron analog of circumbiphenyl (C38H16) in π-bonding, while the 3D aromatic C4v Ca©B56 (B-1) possesses a perfect delocalized π system over the σ-skeleton on the tube surface. The IR and Raman spectra of C4v Ca©B56 (B-1) and photoelectron spectrum of its monoanion C4v Ca©B56‑ are computationally simulated to facilitate their spectroscopic characterizations.

  20. From Quasi-Planar B56 to Penta-Ring Tubular Ca©B56: Prediction of Metal-Stabilized Ca©B56 as the Embryo of Metal-Doped Boron α-Nanotubes

    PubMed Central

    Tian, Wen-Juan; Chen, Qiang; Tian, Xin-Xin; Mu, Yue-Wen; Lu, Hai-Gang; Li, Si-Dian

    2016-01-01

    Motifs of planar metalloborophenes, cage-like metalloborospherenes, and metal-centered double-ring tubular boron species have been reported. Based on extensive first-principles theory calculations, we present herein the possibility of doping the quasi-planar C2v B56 (A-1) with an alkaline-earth metal to produce the penta-ring tubular Ca©B56 (B-1) which is the most stable isomer of the system obtained and can be viewed as the embryo of metal-doped (4,0) boron α-nanotube Ca©BNT(4,0) (C-1). Ca©BNT(4,0) (C-1) can be constructed by rolling up the most stable boron α-sheet and is predicted to be metallic in nature. Detailed bonding analyses show that the highly stable planar C2v B56 (A-1) is the boron analog of circumbiphenyl (C38H16) in π-bonding, while the 3D aromatic C4v Ca©B56 (B-1) possesses a perfect delocalized π system over the σ-skeleton on the tube surface. The IR and Raman spectra of C4v Ca©B56 (B-1) and photoelectron spectrum of its monoanion C4v Ca©B56− are computationally simulated to facilitate their spectroscopic characterizations. PMID:27885257

  1. Substrate and method for the formation of continuous magnesium diboride and doped magnesium diboride wire

    DOEpatents

    Suplinskas, Raymond J.; Finnemore, Douglas; Bud'ko, Serquei; Canfield, Paul

    2007-11-13

    A chemically doped boron coating is applied by chemical vapor deposition to a silicon carbide fiber and the coated fiber then is exposed to magnesium vapor to convert the doped boron to doped magnesium diboride and a resultant superconductor.

  2. On-line DLTS investigations of vacancy related defects in low-temperature electron irradiated, boron-doped Si

    NASA Astrophysics Data System (ADS)

    Zangenberg, N. R.; Nylandsted Larsen, A.

    2005-02-01

    Vacancy-related defects in Si are explored with deep level transient spectroscopy (DLTS). The measurements are performed on-line on irradiated p-type Si and a new trap with the signature (Epa, σpa) = (0.18 eV, 6.5×10-15 cm2) only present at cryogenic temperatures is studied. Furthermore, the bi-stable boron-vacancy complex is studied and it’s configuration at low temperatures is investigated and found to have the signature (Epa, σpa) = (0.11 eV, 8.2×10-15 cm2).

  3. Fe-Cluster Pushing Electrons to N-Doped Graphitic Layers with Fe3C(Fe) Hybrid Nanostructure to Enhance O2 Reduction Catalysis of Zn-Air Batteries.

    PubMed

    Yang, Jie; Hu, Jiangtao; Weng, Mouyi; Tan, Rui; Tian, Leilei; Yang, Jinlong; Amine, Joseph; Zheng, Jiaxin; Chen, Haibiao; Pan, Feng

    2017-02-08

    Non-noble metal catalysts with catalytic activity toward oxygen reduction reaction (ORR) comparable or even superior to that of Pt/C are extremely important for the wide application of metal-air batteries and fuel cells. Here, we develop a simple and controllable strategy to synthesize Fe-cluster embedded in Fe3C nanoparticles (designated as Fe3C(Fe)) encased in nitrogen-doped graphitic layers (NDGLs) with graphitic shells as a novel hybrid nanostructure as an effective ORR catalyst by directly pyrolyzing a mixture of Prussian blue (PB) and glucose. The pyrolysis temperature was found to be the key parameter for obtaining a stable Fe3C(Fe)@NDGL core-shell nanostructure with an optimized content of nitrogen. The optimized Fe3C(Fe)@NDGL catalyst showed high catalytic performance of ORR comparable to that of the Pt/C (20 wt %) catalyst and better stability than that of the Pt/C catalyst in alkaline electrolyte. According to the experimental results and first principle calculation, the high activity of the Fe3C(Fe)@NDGL catalyst can be ascribed to the synergistic effect of an adequate content of nitrogen doping in graphitic carbon shells and Fe-cluster pushing electrons to NDGL. A zinc-air battery utilizing the Fe3C(Fe)@NDGL catalyst demonstrated a maximum power density of 186 mW cm(-2), which is slightly higher than that of a zinc-air battery utilizing the commercial Pt/C catalyst (167 mW cm(-2)), mostly because of the large surface area of the N-doped graphitic carbon shells. Theoretical calculation verified that O2 molecules can spontaneously adsorb on both pristine and nitrogen doped graphene surfaces and then quickly diffuse to the catalytically active nitrogen sites. Our catalyst can potentially become a promising replacement for Pt catalysts in metal-air batteries and fuel cells.

  4. Miniaturized graphite sensors doped with metal-bathophenanthroline complexes for the selective potentiometric determination of uric acid in biological fluids.

    PubMed

    Hassan, S S; Rizk, N M

    1997-08-01

    Miniaturized poly(vinyl chloride) matrix membrane sensors in an all-solid-state graphite support, responsive to urate anion, were developed. The membranes incorporate lipophilic ion-pair complexes of urate anion with ruthenium(III), iron(II), nickel(II) and copper(I) bathophenanthroline (4,7-diphenyl-1,10-phenanthroline) counter cations. The sensors demonstrate a near-Nernstian response to urate over the concentration range 1 x 10(-2)-1 x 10(-5) mol l-1 and have micromolar detection limits and good selectivity properties. The response is virtually unaffected by pH changes in the range 7-10 and the response times are 5-10 s in aqueous solutions and in human serum and urine samples. A flow injection detector incorporating an iron(II) bathophenanthroline-urate graphite sensor was used for continuous monitoring of uric acid. The minimum detectable concentration was approximately 8 micrograms ml-1 and the sample throughput was approximately 120 h-1. Direct potentiometric determination of uric acid in the static and hydrodynamic modes of operation over the range 15 micrograms ml-1-1.5 mg ml-1 showed average recoveries of 98.7 and 97.8% with RSDs of 0.6 and 0.7%, respectively. Application of the method to the determination of uric acid in human serum and urine gave results that compared favourably with those obtained by the standard spectrophotometric method.

  5. The effect of boron doping on crystal structure, magnetic properties and magnetocaloric effect of DyCo2

    SciTech Connect

    Wang, C. L.; Liu, J.; Mudryk, Y.; Gschneidner, Jr., K. A.; Long, Y.; Pecharsky, V. K.

    2015-12-19

    In this study, the magnetic properties and magnetic entropy changes of DyCo2Bx (x=0, 0.05, 0.1, and 0.2) alloys were investigated. The Curie temperature (TC) increases with increasing B concentration. The frequency dependence of ac magnetic susceptibility of DyCo2 caused by the narrow domain wall pinning effect is depressed by B doping, but the coercivity and the magnetic viscosity are prominently increased in the B doped alloys. The magnetic transition nature of DyCo2Bx changes from the first-order to the second-order with increasing x, which leads to the decrease of the maximum magnetic entropy change. However, the relative cooling power (RCP) of DyCo2 and the B doped alloys remains nearly constant.

  6. The effect of boron doping on crystal structure, magnetic properties and magnetocaloric effect of DyCo2

    DOE PAGES

    Wang, C. L.; Liu, J.; Mudryk, Y.; ...

    2015-12-19

    In this study, the magnetic properties and magnetic entropy changes of DyCo2Bx (x=0, 0.05, 0.1, and 0.2) alloys were investigated. The Curie temperature (TC) increases with increasing B concentration. The frequency dependence of ac magnetic susceptibility of DyCo2 caused by the narrow domain wall pinning effect is depressed by B doping, but the coercivity and the magnetic viscosity are prominently increased in the B doped alloys. The magnetic transition nature of DyCo2Bx changes from the first-order to the second-order with increasing x, which leads to the decrease of the maximum magnetic entropy change. However, the relative cooling power (RCP) ofmore » DyCo2 and the B doped alloys remains nearly constant.« less

  7. The effect of boron doping on crystal structure, magnetic properties and magnetocaloric effect of DyCo2

    NASA Astrophysics Data System (ADS)

    Wang, C. L.; Liu, J.; Mudryk, Y.; Gschneidner, K. A.; Long, Y.; Pecharsky, V. K.

    2016-05-01

    The magnetic properties and magnetic entropy changes of DyCo2Bx (x=0, 0.05, 0.1, and 0.2) alloys were investigated. The Curie temperature (TC) increases with increasing B concentration. The frequency dependence of ac magnetic susceptibility of DyCo2 caused by the narrow domain wall pinning effect is depressed by B doping, but the coercivity and the magnetic viscosity are prominently increased in the B doped alloys. The magnetic transition nature of DyCo2Bx changes from the first-order to the second-order with increasing x, which leads to the decrease of the maximum magnetic entropy change. However, the relative cooling power (RCP) of DyCo2 and the B doped alloys remains nearly constant.

  8. The effect of boron doping on crystal structure, magnetic properties and magnetocaloric effect of DyCo2

    DOE PAGES

    Wang, C. L.; Liu, J.; Mudryk, Y.; ...

    2015-12-19

    The magnetic properties and magnetic entropy changes of DyCo2Bx (x=0, 0.05, 0.1, and 0.2) alloys were investigated. The Curie temperature (TC) increases with increasing B concentration. The frequency dependence of ac magnetic susceptibility of DyCo2 caused by the narrow domain wall pinning effect is depressed by B doping, but the coercivity and the magnetic viscosity are prominently increased in the B doped alloys. The magnetic transition nature of DyCo2Bx changes from the first-order to the second-order with increasing x, which leads to the decrease of the maximum magnetic entropy change. Furthermore, the relative cooling power (RCP) of DyCo2 and themore » B doped alloys remains nearly constant.« less

  9. The effect of boron doping on crystal structure, magnetic properties and magnetocaloric effect of DyCo2

    SciTech Connect

    Wang, C. L.; Liu, J.; Mudryk, Y.; Gschneidner, Jr., K. A.; Long, Y.; Pecharsky, V. K.

    2015-12-19

    The magnetic properties and magnetic entropy changes of DyCo2Bx (x=0, 0.05, 0.1, and 0.2) alloys were investigated. The Curie temperature (TC) increases with increasing B concentration. The frequency dependence of ac magnetic susceptibility of DyCo2 caused by the narrow domain wall pinning effect is depressed by B doping, but the coercivity and the magnetic viscosity are prominently increased in the B doped alloys. The magnetic transition nature of DyCo2Bx changes from the first-order to the second-order with increasing x, which leads to the decrease of the maximum magnetic entropy change. Furthermore, the relative cooling power (RCP) of DyCo2 and the B doped alloys remains nearly constant.

  10. Graphite on graphite

    NASA Astrophysics Data System (ADS)

    Volovik, G. E.; Pudalov, V. M.

    2016-12-01

    We propose potential geometry for fabrication of the graphite sheets with atomically smooth edges. For such sheets with Bernal stacking, the electron-electron interaction and topology should cause sufficiently high density of states resulting in the high temperature of either spin ordering or superconducting pairing.

  11. Longitudinal cutting of pure and doped carbon nanotubes to form graphitic nanoribbons using metal clusters as nanoscalpels.

    PubMed

    Elías, Ana Laura; Botello-Méndez, Andrés R; Meneses-Rodríguez, David; Jehová González, Viviana; Ramírez-González, Daniel; Ci, Lijie; Muñoz-Sandoval, Emilio; Ajayan, Pulickel M; Terrones, Humberto; Terrones, Mauricio

    2010-02-10

    We report the use of transition metal nanoparticles (Ni or Co) to longitudinally cut open multiwalled carbon nanotubes in order to create graphitic nanoribbons. The process consists of catalytic hydrogenation of carbon, in which the metal particles cut sp(2) hybridized carbon atoms along nanotubes that results in the liberation of hydrocarbon species. Observations reveal the presence of unzipped nanotubes that were cut by the nanoparticles. We also report the presence of partially open carbon nanotubes, which have been predicted to have novel magnetoresistance properties.(1) The nanoribbons produced are typically 15-40 nm wide and 100-500 nm long. This method offers an alternative approach for making graphene nanoribbons, compared to the chemical methods reported recently in the literature.

  12. Three-Dimensional Phosphorus-Doped Graphitic-C3N4 Self-Assembly with NH2-Functionalized Carbon Composite Materials for Enhanced Oxygen Reduction Reaction.

    PubMed

    Qiu, Yang; Xin, Le; Jia, Fan; Xie, Jian; Li, Wenzhen

    2016-12-06

    Oxygen reduction reaction (ORR) is the major reaction that occurs at the cathodes of fuel cells and metal-air batteries. Development of inexpensive, active, and durable heteroatom doped carbon-based ORR catalysts can lead to significant cost reduction of these electrochemical energy devices, which therefore has recently attracted enormous research attentions. This work reports a three-dimensional porous composite (P-g-C3N4@NH2-CB) for the highly efficient ORR catalyst. P-g-C3N4@NH2-CB was prepared by mixing phosphorus-doped graphitic carbon nitride nanosheets (P-g-C3N4 NSs) with NH2-functionalized carbon black (NH2-CB) via a novel self-assembly approach. The NH2-CB was rationally chosen as the spacer that enables the self-assembled with the P-g-C3N4 NSs driven by the electrostatic interaction. The intercalation of NH2-CB induces the transformation of 2-D P-g-C3N4 NSs into a 3-D composites material of higher surface area, thereby exposing more ORR active sites. The P-g-C3N4@NH2-CB exhibited a remarkable ORR activity with an electron transfer number of 3.83 and Tafel slope of 89 mV dec(-1) in alkaline electrolyte, which is comparable to the ORR performance on Pt/Vulcan XC-72. It is found that the incorporated P atoms as well as employing NH2-CB spacer not only reduces the overpotential of ORR, but also enhances the ORR activity of carbon nitride-based materials, owing to the synergistic effect between P and N in tri-s-triazine rings of carbon nitrides and the optimum interaction between the oppositely charged P-g-C3N4 and NH2-CB.

  13. Pre-irradiation spatial distribution and stability of boride particles in rapidly solidified boron-doped stainless steels

    SciTech Connect

    Kanani, N.; Arnberg, L.; Harling, O.K.

    1981-01-01

    The time temperature behavior of boride particles has been studied in rapidly solidified ultra low carbon and nitrogen modified 316 stainless steel with 0.088% boron and 0.45% zirconium. The results show that the as-splat-cooled specimens exhibit precipitates at the grain boundaries and triple junctions. For temperatures up to about 750/sup 0/C no significant microstructural changes occur for short heat treatment times. In the temperature range of 750 to 950/sup 0/C, however, particles typically 100 to 500 A in diameter containing Zr and B are formed within the grains. Higher temperatures enhance the formation of such particles and give rise to particle networks. The results show that a fine and uniform distribution of the boride particles almost exclusively within the grains can be achieved if proper annealing conditions are chosen. This type of distribution is an important requirement for the homogeneous production of helium during neutron irradiation in fast reactors.

  14. Nucleation Control for Large, Single Crystalline Domains of Monolayer Hexagonal Boron Nitride via Si-Doped Fe Catalysts

    PubMed Central

    2015-01-01

    The scalable chemical vapor deposition of monolayer hexagonal boron nitride (h-BN) single crystals, with lateral dimensions of ∼0.3 mm, and of continuous h-BN monolayer films with large domain sizes (>25 μm) is demonstrated via an admixture of Si to Fe catalyst films. A simple thin-film Fe/SiO2/Si catalyst system is used to show that controlled Si diffusion into the Fe catalyst allows exclusive nucleation of monolayer h-BN with very low nucleation densities upon exposure to undiluted borazine. Our systematic in situ and ex situ characterization of this catalyst system establishes a basis for further rational catalyst design for compound 2D materials. PMID:25664483

  15. Electro-fenton and photoelectro-fenton degradation of sulfanilic acid using a boron-doped diamond anode and an air diffusion cathode.

    PubMed

    El-Ghenymy, Abdellatif; Garrido, José Antonio; Centellas, Francesc; Arias, Conchita; Cabot, Pere Lluís; Rodríguez, Rosa María; Brillas, Enric

    2012-04-05

    The mineralization of sulfanilic acid has been studied by electro-Fenton (EF) and photoelectro-Fenton (PEF) reaction with UVA light using an undivided electrochemical cell with a boron-doped diamond (BDD) anode and an air diffusion cathode able to generate H(2)O(2). Organics were then oxidized by hydroxyl radicals formed at the anode surface from water oxidation and in the bulk from Fenton's reaction between generated H(2)O(2) and added Fe(2+). The UVA irradiation in PEF enhanced the production of hydroxyl radicals in the bulk, accelerating the removal of organics and photodecomposed intermediates like Fe(III)-carboxylate complexes. Partial decontamination of 1.39 mM sulfanilic acid solutions was achieved by EF until 100 mA cm(-2) at optimum conditions of 0.4 mM Fe(2+) and pH 3.0. The increase in current density and substrate content led to an almost total mineralization. In contrast, the PEF process was more powerful, yielding almost complete mineralization in less electrolysis time under comparable conditions. The kinetics for sulfanilic acid decay always followed a pseudo-first-order reaction. Hydroquinone and p-benzoquinone were detected as aromatic intermediates, whereas acetic, maleic, formic, oxalic, and oxamic acids were identified as generated carboxylic acids. NH(4)(+) ion was preferentially released in both treatments, along with NO(3)(-) ion in smaller proportion.

  16. Boron Doped diamond films as electron donors in photovoltaics: An X-ray absorption and hard X-ray photoemission study

    SciTech Connect

    Kapilashrami, M.; Zegkinoglou, I.; Conti, G.; Nemšák, S.; Conlon, C. S.; Fadley, C. S.; Törndahl, T.; Fjällström, V.; Lischner, J.; Louie, Steven G.; Hamers, R. J.; Zhang, L.; Guo, J.-H.; Himpsel, F. J.

    2014-10-14

    Highly boron-doped diamond films are investigated for their potential as transparent electron donors in solar cells. Specifically, the valence band offset between a diamond film (as electron donor) and Cu(In,Ga)Se₂ (CIGS) as light absorber is determined by a combination of soft X-ray absorption spectroscopy and hard X-ray photoelectron spectroscopy, which is more depth-penetrating than standard soft X-ray photoelectron spectroscopy. In addition, a theoretical analysis of the valence band is performed, based on GW quasiparticle band calculations. The valence band offset is found to be small: VBO=VBM{sub CIGS} – VBM{sub diamond}=0.3 eV±0.1 eV at the CIGS/Diamond interface and 0.0 eV±0.1 eV from CIGS to bulk diamond. These results provide a promising starting point for optimizing the band offset by choosing absorber materials with a slightly lower valence band maximum.

  17. Direct electrochemistry of Shewanella loihica PV-4 on gold nanoparticles-modified boron-doped diamond electrodes fabricated by layer-by-layer technique.

    PubMed

    Wu, Wenguo; Xie, Ronggang; Bai, Linling; Tang, Zuming; Gu, Zhongze

    2012-05-01

    Microbial Fuel Cells (MFCs) are robust devices capable of taping biological energy, converting pollutants into electricity through renewable biomass. The fabrication of nanostructured electrodes with good bio- and electrochemical activity, play a profound role in promoting power generation of MFCs. Au nanoparticles (AuNPs)-modified Boron-Doped Diamond (BDD) electrodes are fabricated by layer-by-layer (LBL) self-assembly technique and used for the direct electrochemistry of Shewanella loihica PV-4 in an electrochemical cell. Experimental results show that the peak current densities generated on the Au/PAH multilayer-modified BDD electrodes increased from 1.25 to 2.93 microA/cm(-2) as the layer increased from 0 to 6. Different cell morphologies of S. loihica PV-4 were also observed on the electrodes and the highest density of cells was attached on the (Au/PAH)6/BDD electrode with well-formed three-dimensional nanostructure. The electrochemistry of S. loihica PV-4 was enhanced on the (Au/PAH)4/BDD electrode due to the appropriate amount of AuNPsand thickness of PAH layer.

  18. High-performance liquid chromatographic method with amperometric detection employing boron-doped diamond electrode for the determination of sildenafil, vardenafil and their main metabolites in plasma.

    PubMed

    Bartošová, Zdenka; Jirovský, David; Horna, Aleš

    2011-11-04

    A simple, fast and sensitive HPLC method with electrochemical detection employing boron-doped diamond electrode (BDD) for the determination of sildenafil (Viagra™), vardenafil (Levitra™) and their main metabolites, N-desmethyl sildenafil and N-desethyl vardenafil in human plasma is presented. The assay involved drug extraction by tert-butyl methyl ether and isocratic reversed-phase liquid chromatography with amperometric detection. Complete separation of all analytes was achieved within 12 min. The mobile phase consisted of 20mM sodium dihydrogen phosphate with 40 mM sodium perchlorate/acetonitrile (70:30, v/v), pH 3.5. The electrode working potential was +1520 mV (vs. Pd/H(2)). Calibration curves were linear over the concentration range of 10-400 ng mL(-1). Phloretin was used as an internal standard. The limits of detection (LOD) and quantification (LOQ) for the studied analytes were within the range of 2-4 ng mL(-1) and 7.0-13.4 ng mL(-1), respectively. The developed method was applied to human plasma samples spiked with analytes at therapeutic concentrations. The study confirms the method's suitability for both pharmacokinetic studies and therapeutic monitoring.

  19. Investigation of the synergistic effects for p-nitrophenol mineralization by a combined process of ozonation and electrolysis using a boron-doped diamond anode.

    PubMed

    Qiu, Cuicui; Yuan, Shi; Li, Xiang; Wang, Huijiao; Bakheet, Belal; Komarneni, Sridhar; Wang, Yujue

    2014-09-15

    Electrolysis and ozonation are two commonly used technologies for treating wastewaters contaminated with nitrophenol pollutants. However, they are often handicapped by their slow kinetics and low yields of total organic carbon (TOC) mineralization. To improve TOC mineralization efficiency, we combined electrolysis using a boron-doped diamond (BDD) anode with ozonation (electrolysis-O3) to treat a p-nitrophenol (PNP) aqueous solution. Up to 91% TOC was removed after 60 min of the electrolysis-O3 process. In comparison, only 20 and 44% TOC was respectively removed by individual electrolysis and ozonation treatment conducted under similar reaction conditions. The result indicates that when electrolysis and ozonation are applied simultaneously, they have a significant synergy for PNP mineralization. This synergy can be mainly attributed to (i) the rapid degradation of PNP to carboxylic acids (e.g., oxalic acid and acetic acid) by O3, which would otherwise take a much longer time by electrolysis alone, and (ii) the effective mineralization of the ozone-refractory carboxylic acids to CO2 by OH generated from multiple sources in the electrolysis-O3 system. The result suggests that combining electrolysis with ozonation can provide a simple and effective way to mutually compensate the limitations of the two processes for degradation of phenolic pollutants.

  20. Development of solar-driven electrochemical and photocatalytic water treatment system using a boron-doped diamond electrode and TiO2 photocatalyst.

    PubMed

    Ochiai, Tsuyoshi; Nakata, Kazuya; Murakami, Taketoshi; Fujishima, Akira; Yao, Yanyan; Tryk, Donald A; Kubota, Yoshinobu

    2010-02-01

    A high-performance, environmentally friendly water treatment system was developed. The system consists mainly of an electrochemical and a photocatalytic oxidation unit, with a boron-doped diamond (BDD) electrode and TiO(2) photocatalyst, respectively. All electric power for the mechanical systems and the electrolysis was able to be provided by photovoltaic cells. Thus, this system is totally driven by solar energy. The treatment ability of the electrolysis and photocatalysis units was investigated by phenol degradation kinetics. An observed rate constant of 5.1 x 10(-3)dm(3)cm(-2)h(-1) was calculated by pseudo-first-order kinetic analysis for the electrolysis, and a Langmuir-Hinshelwood rate constant of 5.6 microM(-1)min(-1) was calculated by kinetic analysis of the photocatalysis. According to previous reports, these values are sufficient for the mineralization of phenol. In a treatment test of river water samples, large amounts of chemical and biological contaminants were totally wet-incinerated by the system. This system could provide 12L/day of drinking water from the Tama River using only solar energy. Therefore, this system may be useful for supplying drinking water during a disaster.

  1. A sandwich structured SiO(2)/cytochrome c/SiO(2) on a boron-doped diamond film electrode as an electrochemical nitrite biosensor.

    PubMed

    Geng, Rong; Zhao, Guohua; Liu, Meichuan; Li, Mingfang

    2008-06-01

    A novel sandwich structured SiO(2) gel/cytochrome c (Cyt c)/SiO(2) gel was designed and constructed on conductive boron-doped diamond (BDD) film substrate. A SiO(2) gel membrane was first in situ deposited on the pretreated positive charged H-terminated BDD electrode with a simple and artful surface vapor sol-gel method. Cyt c was subsequently immobilized onto the SiO(2) membranes by electrostatic attraction, followed by another SiO(2) gel layer in situ depositing on it. The SiO(2) interlayer was conceived to play an important role in the resultant sandwich structured SiO(2)/Cyt c/SiO(2)/BDD electrode as a selective "semi-open" medium, which guaranteed the immobilized Cyt c to maintain high stability and perform good electrochemistry and biocatalysis responses. The bioactivity of Cyt c was well protected and the immobilized biomolecule even didn't denature at extremely high or low pH condition. More attractively, Cyt c in the sandwich structured electrode could be further oxidized into highly reactive Cyt c pi-cation by two-step electrochemical oxidation, which could oxidize NO(2)(-) into NO(3)(-) in the solution. A sensitive determination approach of nitrite was accordingly built up based on this biocatalytic oxidative interaction for the first time and a possible mechanism of the interaction was herein proposed.

  2. Electrochemical behavior of chlorogenic acid at a boron-doped diamond electrode and estimation of the antioxidant capacity in the coffee samples based on its oxidation peak.

    PubMed

    Yardım, Yavuz

    2012-04-01

    In this study, an electroanalytical methodology for the determination of chlorogenic acid (CGA) was achieved at a boron-doped diamond electrode under adsorptive transfer stripping voltammetric conditions. The values obtained for CGA were used to estimate the antioxidant properties of the coffee sample based on CGA oxidation. By using square-wave stripping mode, the compound yielded a well-defined voltammetric response at +0.49 V with respect to Ag/AgCl in Britton-Robinson buffer at pH 3.0 (after 120 s accumulations at a fixed potential of 0.40 V). At the optimum experimental conditions, linear calibration curve is obtained within the concentration range of 0.25 to 4.0 μg mL⁻¹ with the limit of detection 0.049 μg mL⁻¹ . The developed protocol was successfully applied for the analysis of antioxidant capacity in the coffee products such as Turkish coffee and instant coffee.

  3. Light-induced degradation and metastable-state recovery with reaction kinetics modeling in boron-doped Czochralski silicon solar cells

    SciTech Connect

    Kim, Soo Min; Chun, Seungju; Bae, Suhyun; Park, Seungeun; Lee, Hae-seok Kim, Donghwan; Kang, Min Gu; Song, Hee-eun; Kang, Yoonmook

    2014-08-25

    Solar cells fabricated from boron-doped p-type Czochralski silicon suffer from light-induced degradation that can lower the conversion efficiency by up to 10% relative. When solar cells are exposed to temperatures between 100 °C and 200 °C under illumination, regeneration, in which the minority carrier lifetime is gradually recovered, occurs after the initial light-induced degradation. We studied the light-induced degradation and regeneration process using carrier injection within a design chamber and observed open-circuit voltage trends at various sample temperatures. We proposed a cyclic reaction kinetics model to more precisely analyze the degradation and recovery phenomenon. Our model incorporated the reaction paths that were not counted in the original model between the three states (annealed, degradation, and regeneration). We calculated a rate constant for each reaction path based on the proposed model, extracted an activation energy for each reaction using these rate constants at various temperatures, and calculated activation energies of redegradation and the stabilization reaction.

  4. Assessment of Boron Doped Diamond Electrode Quality and Application to In Situ Modification of Local pH by Water Electrolysis.

    PubMed

    Read, Tania L; Macpherson, Julie V

    2016-01-06

    Boron doped diamond (BDD) electrodes have shown considerable promise as an electrode material where many of their reported properties such as extended solvent window, low background currents, corrosion resistance, etc., arise from the catalytically inert nature of the surface. However, if during the growth process, non-diamond-carbon (NDC) becomes incorporated into the electrode matrix, the electrochemical properties will change as the surface becomes more catalytically active. As such it is important that the electrochemist is aware of the quality and resulting key electrochemical properties of the BDD electrode prior to use. This paper describes a series of characterization steps, including Raman microscopy, capacitance, solvent window and redox electrochemistry, to ascertain whether the BDD electrode contains negligible NDC i.e. negligible sp(2) carbon. One application is highlighted which takes advantage of the catalytically inert and corrosion resistant nature of an NDC-free surface i.e. stable and quantifiable local proton and hydroxide production due to water electrolysis at a BDD electrode. An approach to measuring the local pH change induced by water electrolysis using iridium oxide coated BDD electrodes is also described in detail.

  5. Electrochemical Imprinted Polycrystalline Nickel-Nickel Oxide Half-Nanotube-Modified Boron-Doped Diamond Electrode for the Detection of L-Serine.

    PubMed

    Dai, Wei; Li, Hongji; Li, Mingji; Li, Cuiping; Wu, Xiaoguo; Yang, Baohe

    2015-10-21

    This paper presents a novel and versatile method for the fabrication of half nanotubes (HNTs) using a flexible template-based nanofabrication method denoted as electrochemical imprinting. With use of this method, polycrystalline nickel and nickel(II) oxide (Ni-NiO) HNTs were synthesized using pulsed electrodeposition to transfer Ni, deposited by radio frequency magnetron sputtering on a porous polytetrafluoroethylene template, onto a boron-doped diamond (BDD) film. The Ni-NiO HNTs exhibited semicircular profiles along their entire lengths, with outer diameters of 50-120 nm and inner diameters of 20-50 nm. The HNT walls were formed of Ni and NiO nanoparticles. A biosensor for the detection of L-serine was fabricated using a BDD electrode modified with Ni-NiO HNTs, and the device demonstrated satisfactory analytical performance with high sensitivity (0.33 μA μM(-1)) and a low limit of detection (0.1 μM). The biosensor also exhibited very good reproducibility and stability, as well as a high anti-interference ability against amino acids such as L-leucine, L-tryptophan, L-cysteine, L-phenylalanine, L-arginine, and L-lysine.

  6. Molecular Signature of Pseudomonas aeruginosa with Simultaneous Nanomolar Detection of Quorum Sensing Signaling Molecules at a Boron-Doped Diamond Electrode

    PubMed Central

    Buzid, Alyah; Shang, Fengjun; Reen, F. Jerry; Muimhneacháin, Eoin Ó; Clarke, Sarah L.; Zhou, Lin; Luong, John H. T.; O’Gara, Fergal; McGlacken, Gerard P.; Glennon, Jeremy D.

    2016-01-01

    Electroanalysis was performed using a boron-doped diamond (BDD) electrode for the simultaneous detection of 2-heptyl-3-hydroxy-4-quinolone (PQS), 2-heptyl-4-hydroxyquinoline (HHQ) and pyocyanin (PYO). PQS and its precursor HHQ are two important signal molecules produced by Pseudomonas aeruginosa, while PYO is a redox active toxin involved in virulence and pathogenesis. This Gram-negative and opportunistic human pathogen is associated with a hospital-acquired infection particularly in patients with compromised immunity and is the primary cause of morbidity and mortality in cystic fibrosis (CF) patients. Early detection is crucial in the clinical management of this pathogen, with established infections entering a biofilm lifestyle that is refractory to conventional antibiotic therapies. Herein, a detection procedure was optimized and proven for the simultaneous detection of PYO, HHQ and PQS in standard mixtures, biological samples, and P. aeruginosa spiked CF sputum samples with remarkable sensitivity, down to nanomolar levels. Differential pulse voltammetry (DPV) scans were also applicable for monitoring the production of PYO, HHQ and PQS in P. aeruginosa PA14 over 8 h of cultivation. The simultaneous detection of these three compounds represents a molecular signature specific to this pathogen. PMID:27427496

  7. Molecular Signature of Pseudomonas aeruginosa with Simultaneous Nanomolar Detection of Quorum Sensing Signaling Molecules at a Boron-Doped Diamond Electrode

    NASA Astrophysics Data System (ADS)

    Buzid, Alyah; Shang, Fengjun; Reen, F. Jerry; Muimhneacháin, Eoin Ó.; Clarke, Sarah L.; Zhou, Lin; Luong, John H. T.; O’Gara, Fergal; McGlacken, Gerard P.; Glennon, Jeremy D.

    2016-07-01

    Electroanalysis was performed using a boron-doped diamond (BDD) electrode for the simultaneous detection of 2-heptyl-3-hydroxy-4-quinolone (PQS), 2-heptyl-4-hydroxyquinoline (HHQ) and pyocyanin (PYO). PQS and its precursor HHQ are two important signal molecules produced by Pseudomonas aeruginosa, while PYO is a redox active toxin involved in virulence and pathogenesis. This Gram-negative and opportunistic human pathogen is associated with a hospital-acquired infection particularly in patients with compromised immunity and is the primary cause of morbidity and mortality in cystic fibrosis (CF) patients. Early detection is crucial in the clinical management of this pathogen, with established infections entering a biofilm lifestyle that is refractory to conventional antibiotic therapies. Herein, a detection procedure was optimized and proven for the simultaneous detection of PYO, HHQ and PQS in standard mixtures, biological samples, and P. aeruginosa spiked CF sputum samples with remarkable sensitivity, down to nanomolar levels. Differential pulse voltammetry (DPV) scans were also applicable for monitoring the production of PYO, HHQ and PQS in P. aeruginosa PA14 over 8 h of cultivation. The simultaneous detection of these three compounds represents a molecular signature specific to this pathogen.

  8. Simultaneous determination of eleven compounds related to metabolism of bioamines in rat cortex and hippocampus by HPLC-ECD with boron-doped diamond working electrode.

    PubMed

    Zhang, Lu; Yang, Jun-qing; Luo, Ying; Shang, Jing-chuan; Jiang, Xin-hui

    2016-01-25

    A simple and rapid high-performance liquid chromatography method with electrochemical detection employing boron-doped diamond electrode (BDD) was established for simultaneous determination of eleven bioamines with their precursor amino acids and metabolites, including two precursors (tyrosine and tryptophan), three catecholamines (dopamine, norepinephrine and epinephrine) and their four metabolites (3,4-dihydroxyphenylacetic acid, 3-methoxytyramine, homovanillic acid, and 3-methoxy-4-hydroxyphenylglycol), as well as serotonin and its metabolite (5-hydroxyindoleacetic acid), in a single run of 20 min using vanillic acid as internal standard. The separation was performed on an ODS2 column (250 mm × 4.6 mm, 5.0 μm) with column oven temperature of 30 °C. Quantification was accomplished at an oxidation potential of 700 mV vs Ag/AgCl reference electrode after a range of applied voltages were tested. Several parameters of this new chromatographic method were validated after optimizaton of the analytical conditions. The new method was successfully applied to test cortex and hippocampus samples from Sprague-Dawley rats with good separation. These eleven compounds in cortices and hippocampi were compared, which was used for monitoring their variations in neuroscience research.

  9. A Taiji-principle-designed magnetic porous C-doped graphitic carbon nitride for environment-friendly solid phase extraction of pollutants from water samples.

    PubMed

    Wang, Man; Yuan, Hao; Deng, Wenjing; Bi, Wentao; Yang, Xiaodi

    2015-09-18

    A new magnetic porous carbon-doped graphitic carbon nitride nanocomposite and experimental strategies were environment-friendly designed for solid phase extraction of brominated flame retardants from water sample. The easily synthesized and low cost nanocomposite was characterized using techniques, including Fourier transform infrared spectroscopy, X-ray diffraction spectrometry, elemental analysis, and transmission electron microscopy. The large surface area and enhanced interactions of this nanocomposite with its adsorption behavior in Taiji principle (a balance of hydrophilicity and hydrophobicity) in aqueous phase benefit the extraction. Magnetic solid phase extraction has advantages such as low solvent consumption and reusability of the sorbent, and was therefore employed in this study. In addition, a quicker and less laborious statistical method, known as response surface methodology, was used to investigate and optimize some crucial factors that affected the adsorption. The combined use of this new nanocomposite and experimental strategy showed excellent precision (2.7-5.2%) and sensitivity (limits of detection (S/N=3): 0.1-0.2 μg L(-1)). This method was successfully applied to the analysis of real water samples giving good spiked recoveries over the range of 92.4-99.8%. This research provides an environment-friendly strategy to prepare suitable sorbents for extraction or adsorption of various compounds within different matrices.

  10. Homogenous Boron-doping in Self-sensitized Carbon Nitride for Enhanced Visible-light Photocatalytic Activity.

    PubMed

    Gu, Quan; Liu, Jianni; Gao, Ziwei; Xue, Can

    2016-11-22

    We report a solvothermal approach for the preparation of homogeneously B-doped self-sensitized carbon nitride (B-SSCN) composed of a core of B-doped carbon nitride microspheres and a covalently linked shell of s-triazine oligomers. Compared to the undoped structure, the obtained B-SSCN photocatalyst exhibits an enhanced visible-light activity, excellent stability for photocatalytic hydrogen generation due to a reduced band-gap, enhanced charge-separation efficiency, and better surface reactivity of B-SSCN. This work provides a new strategy to uniformly insert heteroatoms into the polymeric carbon nitride framework for the development of metal-free photocatalysts towards efficient production of solar fuels.

  11. Structural and electrical characterization of boron-containing diamond-like carbon films deposited by femtosecond pulsed laser ablation

    NASA Astrophysics Data System (ADS)

    Sikora, A.; Berkesse, A.; Bourgeois, O.; Garden, J.-L.; Guerret-Piécourt, C.; Rouzaud, J.-N.; Loir, A.-S.; Garrelie, F.; Donnet, C.

    2009-10-01

    The present study investigates the influence of the incorporation of boron in Diamond-Like Carbon (DLC) films deposited by femtosecond laser ablation, on the structure and electrical properties of the coatings within the temperature range 70-300 K. Doping with boron has been performed by ablating alternatively graphite and boron targets. The film structure and composition have been highlighted by coupling Atomic Force Microscopy (AFM), Scanning Electron Microscopy equipped with a field emission gun (SEM-FEG) and High Resolution Transmission Electron Microscopy (HRTEM). Boron dilution ranges between 2 and 8% and appears as nanometer size clusters embedded in the DLC matrix. Typical resistivity values are 100 W cm for pure a-C films, down to few W cm for a-C:B films at room temperature. The resistance decreases exponentially when the temperature increases in the range 70-300 K. The results are discussed considering the classical model of hopping conduction in thin films. Some coatings show temperature coefficients of resistance (TCR) as high as 3.85%. TCRs decrease when the doping increases. Such high values of TCR may have interests in the use of these films as thermometer elements in micro and nanodevices.

  12. A new class of boron nanotube.

    PubMed

    Wang, Jing; Liu, Ying; Li, You-Cheng

    2009-12-07

    The configurations, stability and electronic structures of a new class of boron sheet and related boron nanotubes are predicted within the framework of density functional theory. This boron sheet is sparser than those of recent proposals. Our theoretic results show that the stable boron sheet remains flat and is metallic. There are bands similar to the pi-bands in graphite near the Fermi level. Stable nanotubes with various diameters and chiral vectors can be rolled from the sheet. Within our study, only the thin (8, 0) nanotube with a band gap of 0.44 eV is semiconducting, while all the other thicker boron nanotubes are metallic, independent of their chirality. It indicates the possibility, in the design of nanodevices, to control the electronic transport properties of the boron nanotube through the diameter.

  13. Isothermal and cyclic oxidation resistance of boron-modified and germanium-doped silicide coatings for titanium alloys

    SciTech Connect

    Cockeram, B.; Rapp, R.A.

    1996-06-01

    Since titanium alloys with an adequate balance of mechanical properties and high-temperature oxidation resistance have not been developed, protective coatings are required. In the authors previous paper, B-modified and Ge-doped silicide diffusion coatings grown on Cp Ti, Ti-24Al-11Nb, Ti-22Al-27Nb, and Ti-20Al-22Nb by the halide-activated, pack-cementation method were described. In this study, isothermal and cyclic oxidation were used to evaluate the oxidation performance of these coatings in comparison to uncoated substrates. The rate-controlling mechanism for isothermal oxidation at high temperature was solid-state diffusion through a SiO{sub 2} scale, while the mechanism for low-temperature oxidation involved grain-boundary diffusion through TiO{sub 2}. Both isothermal and cyclic oxidation rates for the B-modified and Ge-doped silicide coatings were much slower than for pure TiSi{sub 2}. Oxygen contamination was not detected by microhardness measurements in the coated substrates after 200 oxidation cycles at 500-1000{degrees}C for the Ti-Al-Nb alloys, or at 500-875{degrees}C for Cp Ti. The excellent oxidation resistance for the optimum coating compositions is discussed.

  14. Initial boronization of PBX-M using ablation of solid boronized probes

    SciTech Connect

    Kugel, H.W.; Hirooka, Y.; Kaita, R.; Kaye, S.; Khandagle, M.; Timberlake, J.; Bell, R.; England, A.; Isler, R.; Okabayashi, M.; Paul, S.; Takahashi, H.; Tighe, W.; von Goeler, S.; Post-Zwicker, A.P.; Jones, S.

    1993-05-01

    The initial boronization of PBX-M was performed using the sequential ablation of two types of solid target probes. Probe-1 in a mushroom shape consisted of a 10.7% boronized 2-D C-C composite containing 3.6 g of boron in a B{sub 4}C binder. Probe-2 in a rectangular shape consisted of an 86% boronized graphite felt composite containing 19.5 g of 40 {mu} boron particles. After boronization with Probe-1, the loop voltage during 1 MW neutral beam heated plasmas decreased 27% and volt-sec consumption decreased 20%. Strong peripheral spectral lines from low-Z elements decreased by factors of about 5. The central oxygen density decreased 15--20%. The total radiated power during neutral beam injection decreased by 43%. Probe-2 boronization exhibited improved operating conditions similar to Probe-1, but for some parameters, a smaller percentage change occurred due to the residual boron from the previous boronization using Probe-1. The ablation rates of both probes were consistent with front face temperatures at or slightly above the boron melting point. These results confirm the effectiveness of the solid target boronization (STB) technique as a real-time impurity control method for replenishing boron depositions without the use of hazardous borane compounds.

  15. Initial boronization of PBX-M using ablation of solid boronized probes

    SciTech Connect

    Kugel, H.W.; Hirooka, Y.; Kaita, R.; Kaye, S.; Khandagle, M. . Inst. of Plasma and Fusion Research); Timberlake, J.; Bell, R.; England, A.; Isler, R.; Okabayashi, M.; Paul, S.; Takahashi, H.; Tighe, W.; von Goeler, S.; Post-Zwicker, A.P. ); Jones, S. )

    1993-05-01

    The initial boronization of PBX-M was performed using the sequential ablation of two types of solid target probes. Probe-1 in a mushroom shape consisted of a 10.7% boronized 2-D C-C composite containing 3.6 g of boron in a B[sub 4]C binder. Probe-2 in a rectangular shape consisted of an 86% boronized graphite felt composite containing 19.5 g of 40 [mu] boron particles. After boronization with Probe-1, the loop voltage during 1 MW neutral beam heated plasmas decreased 27% and volt-sec consumption decreased 20%. Strong peripheral spectral lines from low-Z elements decreased by factors of about 5. The central oxygen density decreased 15--20%. The total radiated power during neutral beam injection decreased by 43%. Probe-2 boronization exhibited improved operating conditions similar to Probe-1, but for some parameters, a smaller percentage change occurred due to the residual boron from the previous boronization using Probe-1. The ablation rates of both probes were consistent with front face temperatures at or slightly above the boron melting point. These results confirm the effectiveness of the solid target boronization (STB) technique as a real-time impurity control method for replenishing boron depositions without the use of hazardous borane compounds.

  16. Magnetism and the absence of superconductivity in the praseodymium–silicon system doped with carbon and boron

    SciTech Connect

    de la Venta, J.; Basaran, Ali C.; Grant, T.; Gallardo-Amores, J. M.; Ramirez, J. G.; Alario-Franco, M. A.; Fisk, Z.; Schuller, Ivan K.

    2013-08-01

    We searched for new structural, magnetic and superconductivity phases in the Pr–Si system using high-pressure high-temperature and arc melting syntheses. Both high and low Si concentration areas of the phase diagram were explored. Although a similar approach in the La–Si system produced new stable superconducting phases, in the Pr–Si system we did not find any new superconductors. At low Si concentrations, the arc-melted samples were doped with C or B. It was found that addition of C gave rise to multiple previously unknown ferromagnetic phases. Furthermore, X-ray refinement of the undoped samples confirmed the existence of the so far elusive Pr3Si2 phase.

  17. Boron- and phosphorus-doped silicon germanium alloy nanocrystals—Nonthermal plasma synthesis and gas-phase thin film deposition

    SciTech Connect

    Rowe, David J. E-mail: kortshagen@umn.edu; Kortshagen, Uwe R. E-mail: kortshagen@umn.edu

    2014-02-01

    Alloyed silicon-germanium (SiGe) nanostructures are the topic of renewed research due to applications in modern optoelectronics and high-temperature thermoelectric materials. However, common techniques for producing nanostructured SiGe focus on bulk processing; therefore little is known of the physical properties of SiGe nanocrystals (NCs) synthesized from molecular precursors. In this letter, we synthesize and deposit thin films of doped SiGe NCs using a single, flow-through nonthermal plasma reactor and inertial impaction. Using x-ray and vibrational analysis, we show that the SiGe NC structure appears truly alloyed for Si{sub 1−x}Ge{sub x} for 0.16 < x < 0.24, and quantify the atomic dopant incorporation within the SiGe NC films.

  18. Boronic acid functionalized N-doped carbon quantum dots as fluorescent probe for selective and sensitive glucose determination

    NASA Astrophysics Data System (ADS)

    Jiang, Guohua; Jiang, Tengteng; Li, Xia; Wei, Zheng; Du, Xiangxiang; Wang, Xiaohong

    2014-04-01

    Nitrogen doped carbon quantum dots (NCQDs) of about 10 nm in diameter have been obtained by hydrothermal reaction from collagen. Because of the superiority of water dispersion, low toxicity and ease of functionlization, the NCQDs were designed as a glucose sensor after covalent grafting by 3-aminophenylboronic (APBA) (APBA-NCQDs). The as-prepared APBA-NCQDs were imparted with glucose sensitivity and selectivity from other saccharides via fluorescence (FL) quenching effect at physiological pH and at room temperature, which show high sensitivity and specificity for glucose determination with a wide range from 1 mM to 14 mM. FL quenching mechanism of APBA-NCQDs was also investigated by adding an external quencher. The APBA-NCQDs-based platform is an environmentally friendly way to substitute inorganic quantum dots containing heavy metals which offer a facile and low cost detection method.

  19. A novel paper-based device coupled with a silver nanoparticle-modified boron-doped diamond electrode for cholesterol detection.

    PubMed

    Nantaphol, Siriwan; Chailapakul, Orawon; Siangproh, Weena

    2015-09-03

    A novel paper-based analytical device (PAD) coupled with a silver nanoparticle-modified boron-doped diamond (AgNP/BDD) electrode was first developed as a cholesterol sensor. The AgNP/BDD electrode was used as working electrode after modification by AgNPs using an electrodeposition method. Wax printing was used to define the hydrophilic and hydrophobic areas on filter paper, and then counter and reference electrodes were fabricated on the hydrophilic area by screen-printing in house. For the amperometric detection, cholesterol and cholesterol oxidase (ChOx) were directly drop-cast onto the hydrophilic area, and H2O2 produced from the enzymatic reaction was monitored. The fabricated device demonstrated a good linearity (0.39 mg dL(-1) to 270.69 mg dL(-1)), low detection limit (0.25 mg dL(-1)), and high sensitivity (49.61 μA mM(-1) cm(-2)). The precision value for ten replicates was 3.76% RSD for 1 mM H2O2. In addition, this biosensor exhibited very high selectivity for cholesterol detection and excellent recoveries for bovine serum analysis (in the range of 99.6-100.8%). The results showed that this new sensing platform will be an alternative tool for cholesterol detection in routine diagnosis and offers the advantages of low sample/reagent consumption, low cost, portability, and short analysis time.

  20. 4-Hydroxyphenylacetic acid oxidation in sulfate and real olive oil mill wastewater by electrochemical advanced processes with a boron-doped diamond anode.

    PubMed

    Flores, Nelly; Cabot, Pere Lluís; Centellas, Francesc; Garrido, José Antonio; Rodríguez, Rosa María; Brillas, Enric; Sirés, Ignasi

    2017-01-05

    The degradation of 4-hydroxyphenylacetic acid, a ubiquitous component of olive oil mill wastewater (OOMW), has been studied by anodic oxidation with electrogenerated H2O2 (AO-H2O2), electro-Fenton (EF) and photoelectro-Fenton (PEF). Experiments were performed in either a 0.050M Na2SO4 solution or a real OOMW at pH 3.0, using a cell with a boron-doped diamond (BDD) anode and an air-diffusion cathode for H2O2 generation. Hydroxyl radicals formed at the BDD surface from water oxidation in all processes and/or in the bulk from Fenton's reaction between added Fe(2+) and generated H2O2 in EF and PEF were the main oxidants. In both matrices, the oxidation ability of the processes increased in the order AO-H2O2