Non-Micropipe Dislocations in 4H-SiC Devices: Electrical Properties and Device Technology Implications

NASA Technical Reports Server (NTRS)

Neudeck, Philip G.; Huang, Wei; Dudley, Michael; Fazi, Christian

1998-01-01

It is well-known that SiC wafer quality deficiencies are delaying the realization of outstandingly superior 4H-SiC power electronics. While efforts to date have centered on eradicating micropipes (i.e., hollow core super-screw dislocations with Burgers vectors greater than or equal to 2c), 4H-SiC wafers and epilayers also contain elementary screw dislocations (i.e., Burgers vector = 1c with no hollow core) in densities on the order of thousands per sq cm, nearly 100-fold micropipe densities. While not nearly as detrimental to SiC device performance as micropipes, it has recently been demonstrated that elementary screw dislocations somewhat degrade the reverse leakage and breakdown properties of 4H-SiC p(+)n diodes. Diodes containing elementary screw dislocations exhibited a 5% to 35% reduction in breakdown voltage, higher pre-breakdown reverse leakage current, softer reverse breakdown I-V knee, and microplasmic breakdown current filaments that were non-catastrophic as measured under high series resistance biasing. This paper details continuing experimental and theoretical investigations into the electrical properties of 4H-SiC elementary screw dislocations. The nonuniform breakdown behavior of 4H-SiC p'n junctions containing elementary screw dislocations exhibits interesting physical parallels with nonuniform breakdown phenomena previously observed in other semiconductor materials. Based upon experimentally observed dislocation-assisted breakdown, a re-assessment of well-known physical models relating power device reliability to junction breakdown has been undertaken for 4H-SiC. The potential impact of these elementary screw dislocation defects on the performance and reliability of various 4H-SiC device technologies being developed for high-power applications will be discussed.

Development and fabrication of low ON resistance high current vertical VMOS power FETs

NASA Technical Reports Server (NTRS)

Kay, S.

1979-01-01

The design of a VMOS Power FET exhibiting low ON resistance, high current as well as high breakdown voltage and fast switching speeds is described. The design which is based on a 1st-order device model, features a novel polysilicon-gate structure and fieldplated groove termination to achieve high packing density and high breakdown voltage, respectively. One test chip, named VNTKI, can block 180 V at an ON resistence of 2.5 ohm. A 150 mil x 200 mil (.19 sq cm) experimental chip has demonstrated a breakdown voltage of 200v, an ON resistance of 0.12 ohm, a switching time of less than 100 ns, and a pulse drain - current of 50 A with 10 V gate drive.

Breakdown in helium in high-voltage open discharge with subnanosecond current front rise

DOE Office of Scientific and Technical Information (OSTI.GOV)

Schweigert, I. V., E-mail: ischweig@itam.nsc.ru; Alexandrov, A. L.; Bokhan, P. A.

Investigations of high-voltage open discharge in helium have shown a possibility of generation of current pulses with subnanosecond front rise, due to ultra-fast breakdown development. The open discharge is ignited between two planar cathodes with mesh anode in the middle between them. For gas pressure 6 Torr and 20 kV applied voltage, the rate of current rise reaches 500 A/(cm{sup 2} ns) for current density 200 A/cm{sup 2} and more. The time of breakdown development was measured for different helium pressures and a kinetic model of breakdown in open discharge is presented, based on elementary reactions for electrons, ions andmore » fast atoms. The model also includes various cathode emission processes due to cathode bombardment by ions, fast atoms, electrons and photons of resonant radiation with Doppler shift of frequency. It is shown, that the dominating emission processes depend on the evolution of the discharge voltage during the breakdown. In the simulations, two cases of voltage behavior were considered: (i) the voltage is kept constant during the breakdown; (ii) the voltage is reduced with the growth of current. For the first case, the exponentially growing current is maintained due to photoemission by the resonant photons with Doppler-shifted frequency. For the second case, the dominating factor of current growth is the secondary electron emission. In both cases, the subnanosecond rise of discharge current was obtained. Also the effect of gas pressure on breakdown development was considered. It was found that for 20 Torr gas pressure the time of current rise decreases to 0.1 ns, which is in agreement with experimental data.« less

New GaN based HEMT with Si3N4 or un-doped region in the barrier for high power applications

NASA Astrophysics Data System (ADS)

Razavi, S. M.; Tahmasb Pour, S.; Najari, P.

2018-06-01

New AlGaN/GaN high electron mobility transistors (HEMTs) that their barrier layers under the gate are divided into two regions horizontally are presented in this work. Upper region is Si3N4 (SI-HEMT) or un-doped AlGaN (UN-HEMT) and lower region is AlGaN with heavier doping compared to barrier layer. Upper region in SI-HEMT and UN-HEMT reduces peak electric field in the channel and then improves breakdown voltage considerably. Lower region increases electron density in the two dimensional electron gas (2-DEG) and enhances drain current significantly. For instance, saturated drain current in SI-HEMT is about 100% larger than that in the conventional one. Moreover, the maximum breakdown voltage in the proposed structures is 65 V. This value is about 30% larger than that in the conventional transistor (50 V). Also, suggested structure reduces short channel effect such as DIBL. The maximum gm is obtained in UN-HEMT and conventional devices. Proposed structures improve breakdown voltage and saturated drain current and then enhance maximum output power density. Maximum output power density in the new structures is about 150% higher than that in the conventional.

Experimental breakdown of selected anodized aluminum samples in dilute plasmas

NASA Technical Reports Server (NTRS)

Grier, Norman T.; Domitz, Stanley

1992-01-01

Anodized aluminum samples representative of Space Station Freedom structural material were tested for electrical breakdown under space plasma conditions. In space, this potential arises across the insulating anodized coating when the spacecraft structure is driven to a negative bias relative to the external plasma potential due to plasma-surface interaction phenomena. For anodized materials used in the tests, it was found that breakdown voltage varied from 100 to 2000 volts depending on the sample. The current in the arcs depended on the sample, the capacitor, and the voltage. The level of the arc currents varied from 60 to 1000 amperes. The plasma number density varied from 3 x 10 exp 6 to 10 exp 3 ions per cc. The time between arcs increased as the number density was lowered. Corona testing of anodized samples revealed that samples with higher corona inception voltage had higher arcing inception voltages. From this it is concluded that corona testing may provide a method of screening the samples.

Thin-Film Module Reverse-Bias Breakdown Sites Identified by Thermal Imaging: Preprint

DOE Office of Scientific and Technical Information (OSTI.GOV)

Johnston, Steven; Sulas, Dana; Guthrey, Harvey L

Thin-film module sections are stressed under reverse bias to simulate partial shading conditions. Such stresses can cause permanent damage in the form of 'wormlike' defects due to thermal runaway. When large reverse biases with limited current are applied to the cells, dark lock-in thermography (DLIT) can detect where spatially-localized breakdown initiates before thermal runaway leads to permanent damage. Predicted breakdown defect sites have been identified in both CIGS and CdTe modules using DLIT. These defects include small pinholes, craters, or voids in the absorber layer of the film that lead to built-in areas of weakness where high current densities maymore » cause thermal damage in a partial-shading event.« less

Thin-Film Module Reverse-Bias Breakdown Sites Identified by Thermal Imaging

DOE Office of Scientific and Technical Information (OSTI.GOV)

Johnston, Steven; Sulas, Dana; Guthrey, Harvey L

Thin-film module sections are stressed under reverse bias to simulate partial shading conditions. Such stresses can cause permanent damage in the form of 'wormlike' defects due to thermal runaway. When large reverse biases with limited current are applied to the cells, dark lock-in thermography (DLIT) can detect where spatially-localized breakdown initiates before thermal runaway leads to permanent damage. Predicted breakdown defect sites have been identified in both CIGS and CdTe modules using DLIT. These defects include small pinholes, craters, or voids in the absorber layer of the film that lead to built-in areas of weakness where high current densities maymore » cause thermal damage in a partial-shading event.« less

Transport Properties of ZnSe- ITO Hetero Junction

NASA Astrophysics Data System (ADS)

Ichibakase, Tsuyoshi

In this report, ITO(Indium Tin Oxide) was used on the glass substrates as the transparent electrode, and ZnSe layer was prepared by the vacuum deposition on this ITO. Then, the electrical characteristics of this sample were investigated by mans of the electric current transport analysis. The sample that ZnSe was prepared as 3.4 μm in case of ITO-ZnSe sample, has high density level at the junction surface. The ITO-ZnSe junction has two type of diffusion current. However, the ITO-ZnSe sample that ZnSe layer was prepared as 0.1 μm can be assumed as the ohmic contact, and ITO-ZnSe(0.1μm) -CdTe sample shows the avalanche breakdown, and it is considered that the avalanche breakdown occurs in CdTe layer. It is difficult to occur the avalanche breakdown, if ZnSe-CdTe junction has high-density level and CdTe layer has high-density defect. Hence, the ZnSe-CdTe sample that CdTe layer was prepared on ITO-ZnSe(0.1μm) substrate has not high-density level at the junction surface, and the CdTe layer with little lattice imperfection can be prepared. It found that ITO-ZnSe(0.1μm) substrate is available for the II-VI compounds semiconductor device through above analysis result.

Current–voltage characteristics of high-voltage 4H-SiC p{sup +}–n{sub 0}–n{sup +} diodes in the avalanche breakdown mode

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ivanov, P. A., E-mail: Pavel.Ivanov@mail.ioffe.ru; Potapov, A. S.; Samsonova, T. P.

p{sup +}–n{sub 0}–n{sup +} 4H-SiC diodes with homogeneous avalanche breakdown at 1860 V are fabricated. The pulse current–voltage characteristics are measured in the avalanche-breakdown mode up to a current density of 4000 A/cm{sup 2}. It is shown that the avalanche-breakdown voltage increases with increasing temperature. The following diode parameters are determined: the avalanche resistance (8.6 × 10{sup –2} Ω cm{sup 2}), the electron drift velocity in the n{sub 0} base at electric fields higher than 10{sup 6} V/cm (7.8 × 10{sup 6} cm/s), and the relative temperature coefficient of the breakdown voltage (2.1 × 10{sup –4} K{sup –1}).

Design, fabrication, and performance analysis of GaN vertical electron transistors with a buried p/n junction

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yeluri, Ramya, E-mail: ramyay@ece.ucsb.edu; Lu, Jing; Keller, Stacia

2015-05-04

The Current Aperture Vertical Electron Transistor (CAVET) combines the high conductivity of the two dimensional electron gas channel at the AlGaN/GaN heterojunction with better field distribution offered by a vertical design. In this work, CAVETs with buried, conductive p-GaN layers as the current blocking layer are reported. The p-GaN layer was regrown by metalorganic chemical vapor deposition and the subsequent channel regrowth was done by ammonia molecular beam epitaxy to maintain the p-GaN conductivity. Transistors with high ON current (10.9 kA/cm{sup 2}) and low ON-resistance (0.4 mΩ cm{sup 2}) are demonstrated. Non-planar selective area regrowth is identified as the limiting factormore » to transistor breakdown, using planar and non-planar n/p/n structures. Planar n/p/n structures recorded an estimated electric field of 3.1 MV/cm, while non-planar structures showed a much lower breakdown voltage. Lowering the p-GaN regrowth temperature improved breakdown in the non-planar n/p/n structure. Combining high breakdown voltage with high current will enable GaN vertical transistors with high power densities.« less

A new theoretical formulation of coupling thermo-electric breakdown in LDPE film under dc high applied fields

NASA Astrophysics Data System (ADS)

Boughariou, F.; Chouikhi, S.; Kallel, A.; Belgaroui, E.

2015-12-01

In this paper, we present a new theoretical and numerical formulation for the electrical and thermal breakdown phenomena, induced by charge packet dynamics, in low-density polyethylene (LDPE) insulating film under dc high applied field. The theoretical physical formulation is composed by the equations of bipolar charge transport as well as by the thermo-electric coupled equation associated for the first time in modeling to the bipolar transport problem. This coupled equation is resolved by the finite-element numerical model. For the first time, all bipolar transport results are obtained under non-uniform temperature distributions in the sample bulk. The principal original results show the occurring of very sudden abrupt increase in local temperature associated to a very sharp increase in external and conduction current densities appearing during the steady state. The coupling between these electrical and thermal instabilities reflects physically the local coupling between electrical conduction and thermal joule effect. The results of non-uniform temperature distributions induced by non-uniform electrical conduction current are also presented for several times. According to our formulation, the strong injection current is the principal factor of the electrical and thermal breakdown of polymer insulating material. This result is shown in this work. Our formulation is also validated experimentally.

Current-limiting challenges for all-spin logic devices

PubMed Central

Su, Li; Zhang, Youguang; Klein, Jacques-Olivier; Zhang, Yue; Bournel, Arnaud; Fert, Albert; Zhao, Weisheng

2015-01-01

All-spin logic device (ASLD) has attracted increasing interests as one of the most promising post-CMOS device candidates, thanks to its low power, non-volatility and logic-in-memory structure. Here we investigate the key current-limiting factors and develop a physics-based model of ASLD through nano-magnet switching, the spin transport properties and the breakdown characteristic of channel. First, ASLD with perpendicular magnetic anisotropy (PMA) nano-magnet is proposed to reduce the critical current (Ic0). Most important, the spin transport efficiency can be enhanced by analyzing the device structure, dimension, contact resistance as well as material parameters. Furthermore, breakdown current density (JBR) of spin channel is studied for the upper current limitation. As a result, we can deduce current-limiting conditions and estimate energy dissipation. Based on the model, we demonstrate ASLD with different structures and channel materials (graphene and copper). Asymmetric structure is found to be the optimal option for current limitations. Copper channel outperforms graphene in term of energy but seriously suffers from breakdown current limit. By exploring the current limit and performance tradeoffs, the optimization of ASLD is also discussed. This benchmarking model of ASLD opens up new prospects for design and implementation of future spintronics applications. PMID:26449410

Extreme plasma states in laser-governed vacuum breakdown.

PubMed

Efimenko, Evgeny S; Bashinov, Aleksei V; Bastrakov, Sergei I; Gonoskov, Arkady A; Muraviev, Alexander A; Meyerov, Iosif B; Kim, Arkady V; Sergeev, Alexander M

2018-02-05

Triggering vacuum breakdown at laser facility is expected to provide rapid electron-positron pair production for studies in laboratory astrophysics and fundamental physics. However, the density of the produced plasma may cease to increase at a relativistic critical density, when the plasma becomes opaque. Here, we identify the opportunity of breaking this limit using optimal beam configuration of petawatt-class lasers. Tightly focused laser fields allow generating plasma in a small focal volume much less than λ 3 and creating extreme plasma states in terms of density and produced currents. These states can be regarded to be a new object of nonlinear plasma physics. Using 3D QED-PIC simulations we demonstrate a possibility of reaching densities over 10 25  cm -3 , which is an order of magnitude higher than expected earlier. Controlling the process via initial target parameters provides an opportunity to reach the discovered plasma states at the upcoming laser facilities.

Experimental investigation on the energy deposition and morphology of the electrical explosion of copper wire in vacuum

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shi, Zongqian; Shi, Yuanjie; Wang, Kun

2016-03-15

This paper presents the experimental results of the electrical explosion of copper wires in vacuum using negative nanosecond-pulsed current with magnitude of 1–2 kA. The 20 μm-diameter copper wires with different lengths are exploded with three different current rates. A laser probe is applied to construct the shadowgraphy and interferometry diagnostics to investigate the distribution and morphology of the exploding product. The interference phase shift is reconstructed from the interferogram, by which the atomic density distribution is calculated. Experimental results show that there exist two voltage breakdown modes depending on the amount of the specific energy deposition. For the strong-shunting mode, shuntingmore » breakdown occurs, leading to the short-circuit-like current waveform. For the weak-shunting mode with less specific energy deposition, the plasma generated during the voltage breakdown is not enough to form a conductive plasma channel, resulting in overdamped declining current waveform. The influence of the wire length and current rate on the characteristics of the exploding wires is also analyzed.« less

Nonequilibrium electronic transport in a one-dimensional Mott insulator

DOE Office of Scientific and Technical Information (OSTI.GOV)

Heidrich-Meisner, F.; Gonzalez, Ivan; Al-Hassanieh, K. A.

2010-01-01

We calculate the nonequilibrium electronic transport properties of a one-dimensional interacting chain at half filling, coupled to noninteracting leads. The interacting chain is initially in a Mott insulator state that is driven out of equilibrium by applying a strong bias voltage between the leads. For bias voltages above a certain threshold we observe the breakdown of the Mott insulator state and the establishment of a steady-state elec- tronic current through the system. Based on extensive time-dependent density-matrix renormalization-group simulations, we show that this steady-state current always has the same functional dependence on voltage, independent of the microscopic details of themore » model and we relate the value of the threshold to the Lieb-Wu gap. We frame our results in terms of the Landau-Zener dielectric breakdown picture. Finally, we also discuss the real-time evolution of the current, and characterize the current-carrying state resulting from the breakdown of the Mott insulator by computing the double occupancy, the spin structure factor, and the entanglement entropy.« less

Influence of in-situ ion-beam sputter cleaning on the conditioning effect of vacuum gaps

NASA Astrophysics Data System (ADS)

Kobayashi, Shinichi; Kojima, Hiroyuki; Saito, Yoshio

1994-05-01

An ion beam sputtering technique was used to clean the electrode surfaces of vacuum gaps. Ions of the sputtering gas were irradiated by means of an ion gun in a vacuum chamber attached to a breakdown measurement chamber. By providing in situ ion-beam sputter cleaning, this system makes it possible to make measurements free from contamination due to exposure to the air. The sputtering gas was He or Ar, and the electrodes were made of oxygen-free copper (purity more than 99.96%). An impulse voltage with the wave form of 64/700 microsecond(s) was applied to the test gap, and the pressure in the breakdown measurement chamber at the beginning of breakdown tests was 1.3 X 10-8 Pa. These experiments showed that ion-beam sputter cleaning results in higher breakdown fields after a repetitive breakdown conditioning procedure, and that He is more effective in improving hold- off voltages after the conditioning (under the same ion current density, the breakdown field was 300 MV/m for He sputtering and 200 MV/m for Ar sputtering). The breakdown fields at the first voltage application after the sputtering cleaning, on the other hand, were not improved.

High voltage and high current density vertical GaN power diodes

DOE PAGES

Fischer, A. J.; Dickerson, J. R.; Armstrong, A. M.; ...

2016-01-01

We report on the realization of a GaN high voltage vertical p-n diode operating at > 3.9 kV breakdown with a specific on-resistance < 0.9 mΩ.cm 2. Diodes achieved a forward current of 1 A for on-wafer, DC measurements, corresponding to a current density > 1.4 kA/cm 2. An effective critical electric field of 3.9 MV/cm was estimated for the devices from analysis of the forward and reverse current-voltage characteristics. Furthermore this suggests that the fundamental limit to the GaN critical electric field is significantly greater than previously believed.

Thermal and Electrical Effects of Partial Shade in Monolithic Thin-Film Photovoltaic Modules: Preprint

DOE Office of Scientific and Technical Information (OSTI.GOV)

Silverman, Timothy J.; Deceglie, Michael G.; Sun, Xingshu

2015-09-02

Photovoltaic cells can be damaged by reverse bias stress, which arises during service when a monolithically integrated thin-film module is partially shaded. We introduce a model for describing a module's internal thermal and electrical state, which cannot normally be measured. Using this model and experimental measurements, we present several results with relevance for reliability testing and module engineering: Modules with a small breakdown voltage experience less stress than those with a large breakdown voltage, with some exceptions for modules having light-enhanced reverse breakdown. Masks leaving a small part of the masked cells illuminated can lead to very high temperature andmore » current density compared to masks covering entire cells.« less

Thermal and Electrical Effects of Partial Shade in Monolithic Thin-Film Photovoltaic Modules

DOE Office of Scientific and Technical Information (OSTI.GOV)

Silverman, Timothy J.; Deceglie, Michael G.; Sun, Xingshu

2015-06-14

Photovoltaic cells can be damaged by reverse bias stress, which arises during service when a monolithically integrated thin-film module is partially shaded. We introduce a model for describing a module's internal thermal and electrical state, which cannot normally be measured. Using this model and experimental measurements, we present several results with relevance for reliability testing and module engineering: Modules with a small breakdown voltage experience less stress than those with a large breakdown voltage, with some exceptions for modules having light-enhanced reverse breakdown. Masks leaving a small part of the masked cells illuminated can lead to very high temperature andmore » current density compared to masks covering entire cells.« less

Enhanced dielectric properties due to space charge-induced interfacial polarization in multilayer polymer films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen, Xinyue; Tseng, Jung-Kai; Treufeld, Imre

We report that with the recent advancement of power electronics, polymer film capacitors have become increasingly important. However, the low temperature rating (up to 85 °C) and low energy density (5 J cm -3 at breakdown) of state-of-the-art biaxially oriented polypropylene (BOPP) films have been limiting factors for advanced power electronics. Based on our recent work, multilayer films (MLFs), which consist of a high energy density polymer [e.g., poly(vinylidene fluoride) (PVDF)] and a high breakdown/low loss polymer [e.g., polycarbonate (PC)], have shown potential to achieve high energy density (13–17 J cm -3), enhanced breakdown strength, high temperature tolerance, and lowmore » loss simultaneously. In this study, the dielectric properties of PC/PVDF 50/50 32- and 256-layer (32L and 256L) films were investigated. The breakdown strength of the 32L film was as high as 800 MV m -1 at room temperature, as compared to 600 MV m -1 of PVDF and 750 MV m-1 of PC. The temperature rating of the 32L film reached 120 °C, higher than that of BOPP. In addition, it was observed that the 32L film with thicker PC layers exhibited a higher breakdown strength and a lower DC conductivity than the 256L film with thinner PC layers at elevated temperatures. These differences were attributed to the difference in the interfacial polarization of space charges, which was further verified by thermally stimulated depolarization current spectroscopy. In conclusion, we conclude that interfacial polarization endows MLFs with the desirable dielectric properties for next generation film capacitors.« less

Enhanced dielectric properties due to space charge-induced interfacial polarization in multilayer polymer films

DOE PAGES

Chen, Xinyue; Tseng, Jung-Kai; Treufeld, Imre; ...

2017-09-15

We report that with the recent advancement of power electronics, polymer film capacitors have become increasingly important. However, the low temperature rating (up to 85 °C) and low energy density (5 J cm -3 at breakdown) of state-of-the-art biaxially oriented polypropylene (BOPP) films have been limiting factors for advanced power electronics. Based on our recent work, multilayer films (MLFs), which consist of a high energy density polymer [e.g., poly(vinylidene fluoride) (PVDF)] and a high breakdown/low loss polymer [e.g., polycarbonate (PC)], have shown potential to achieve high energy density (13–17 J cm -3), enhanced breakdown strength, high temperature tolerance, and lowmore » loss simultaneously. In this study, the dielectric properties of PC/PVDF 50/50 32- and 256-layer (32L and 256L) films were investigated. The breakdown strength of the 32L film was as high as 800 MV m -1 at room temperature, as compared to 600 MV m -1 of PVDF and 750 MV m-1 of PC. The temperature rating of the 32L film reached 120 °C, higher than that of BOPP. In addition, it was observed that the 32L film with thicker PC layers exhibited a higher breakdown strength and a lower DC conductivity than the 256L film with thinner PC layers at elevated temperatures. These differences were attributed to the difference in the interfacial polarization of space charges, which was further verified by thermally stimulated depolarization current spectroscopy. In conclusion, we conclude that interfacial polarization endows MLFs with the desirable dielectric properties for next generation film capacitors.« less

High improvement in trap level density and direct current breakdown strength of block polypropylene by doping with a β-nucleating agent

NASA Astrophysics Data System (ADS)

Zhang, Chong; Zha, Jun-Wei; Yan, Hong-Da; Li, Wei-Kang; Dang, Zhi-Min

2018-02-01

Polypropylene is one kind of eco-friendly insulating material, which has attracted more attention for use in high voltage direct current (HVDC) insulation due to the long-distance transmission, low loss, and recyclability. In this work, the morphology and thermal and electrical properties of the block polypropylene with various β-nucleating agent (β-NA) contents were investigated. The relative fraction of the β-crystal can reach 64.7% after adding 0.05 wt. % β-NA. The β-NA also greatly reduced the melting point and improved the crystallization temperature. The electrical property results showed that the alternating and direct current breakdown strength and conduction current were obviously improved. In addition, space charge accumulation was significantly suppressed by introducing the β-NA. This work provides an attractive strategy of design and fabrication of polypropylene for HVDC application.

Electron transport model of dielectric charging

NASA Technical Reports Server (NTRS)

Beers, B. L.; Hwang, H. C.; Lin, D. L.; Pine, V. W.

1979-01-01

A computer code (SCCPOEM) was assembled to describe the charging of dielectrics due to irradiation by electrons. The primary purpose for developing the code was to make available a convenient tool for studying the internal fields and charge densities in electron-irradiated dielectrics. The code, which is based on the primary electron transport code POEM, is applicable to arbitrary dielectrics, source spectra, and current time histories. The code calculations are illustrated by a series of semianalytical solutions. Calculations to date suggest that the front face electric field is insufficient to cause breakdown, but that bulk breakdown fields can easily be exceeded.

Inductively generated streaming plasma ion source

DOEpatents

Glidden, Steven C.; Sanders, Howard D.; Greenly, John B.

2006-07-25

A novel pulsed, neutralized ion beam source is provided. The source uses pulsed inductive breakdown of neutral gas, and magnetic acceleration and control of the resulting plasma, to form a beam. The beam supplies ions for applications requiring excellent control of ion species, low remittance, high current density, and spatial uniformity.

Atomic layer deposited Ta2O5 gate insulation for enhancing breakdown voltage of AlN/GaN high electron mobility transistors

NASA Astrophysics Data System (ADS)

Deen, D. A.; Storm, D. F.; Bass, R.; Meyer, D. J.; Katzer, D. S.; Binari, S. C.; Lacis, J. W.; Gougousi, T.

2011-01-01

AlN/GaN heterostructures with a 3.5 nm AlN cap have been grown by molecular beam epitaxy followed by a 6 nm thick atomic layer deposited Ta2O5 film. Transistors fabricated with 150 nm length gates showed drain current density of 1.37 A/mm, transconductance of 315 mS/mm, and sustained drain-source biases up to 96 V while in the off-state before destructive breakdown as a result of the Ta2O5 gate insulator. Terman's method has been modified for the multijunction capacitor and allowed the measurement of interface state density (˜1013 cm-2 eV-1). Small-signal frequency performance of 75 and 115 GHz was obtained for ft and fmax, respectively.

Comparison between Trichel pulse in negative corona and self-pulsing in other configurations

NASA Astrophysics Data System (ADS)

Xia, Qing; Zhang, Yu; He, Feng; Qin, Yu; Jiang, Zhaorui; Ouyang, Jiting

2018-02-01

We present here a comparison study on self-pulsing phenomena in negative corona, hollow cathode discharges (HCD) and parallel-plate discharge in air. The voltage-current (V-I) curve, the waveforms of self-pulsed currents, and the time-resolved images of the pulsed discharge are measured under various operating conditions. It is experimentally evidenced that the Trichel pulse in a negative corona and the self-pulsing in HCD and/or parallel-plate discharge have similar features as well as spatial-temporal developing process. It is suggested that they should have a similar mechanism that the pulsing reflects the mode transition of discharge between the low-current Townsend and the high-current normal glow. The pulse rising corresponds to the breakdown and formation of temporal glow discharge in a background of low-current Townsend discharge, while the decay edge relates to the transition back to Townsend discharge. The pulse interval is the re-building process of the space charge layer of high density to ensure the glow breakdown.

The energy requirements of an aircraft triggered discharge

NASA Astrophysics Data System (ADS)

Bicknell, J. A.; Shelton, R. W.

The corona produced at aircraft surfaces requires an energy input before the corona can develop into a high current discharge and, thus, a possible lightning stroke. This energy must be drawn from the space charge field of the thundercloud and, since this is of low density, the unique propagation characteristics of positive corona streamers may be important. Estimates of the energy made available by the propagation are compared with laboratory measurements of the minimum energy input required to trigger a breakdown. The comparison indicates a minimum streamer range for breakdown of several tens of meters. Also estimated is the energy released as a consequence of streamer-hydrometer interactions; this is shown to be significant so that breakdown could depend upon the precipitation rate within the cloud. Inhibiting streamer production may therefore provide an aircraft with a degree of corona protection.

Ga2O3 Schottky rectifiers with 1 ampere forward current, 650 V reverse breakdown and 26.5 MW.cm-2 figure-of-merit

NASA Astrophysics Data System (ADS)

Yang, Jiancheng; Ren, F.; Tadjer, Marko; Pearton, S. J.; Kuramata, A.

2018-05-01

A key goal for Ga2O3 rectifiers is to achieve high forward currents and high reverse breakdown voltages. Field-plated β-Ga2O3 Schottky rectifiers with area 0.01 cm2, fabricated on 10 μm thick, lightly-doped drift regions (1.33 x 1016 cm-3) on heavily-doped (3.6 x 1018 cm-3) substrates, exhibited forward current density of 100A.cm-2 at 2.1 V, with absolute current of 1 A at this voltage and a reverse breakdown voltage (VB) of 650V. The on-resistance (RON) was 1.58 x 10-2 Ω.cm2, producing a figure of merit (VB2/RON) of 26.5 MW.cm-2. The Schottky barrier height of the Ni was 1.04 eV, with an ideality factor of 1.02. The on/off ratio was in the range 3.3 x 106 - 5.7 x 109 for reverse biases between 5 and 100V. The reverse recovery time was ˜30 ns for switching from +2V to -5V. The results show the capability of β-Ga2O3 rectifiers to achieve exceptional performance in both forward and reverse bias conditions.

Workshop on Plasma Experiments in the Laboratory and in Space. Abstracts

DTIC Science & Technology

1991-01-01

The AMPTE IRM satellite revealed in the region of overlap between plasmaspheric and ring current plasmas a gra- dual decrease of cold plasna density...names UMKD generator, "Alive wine , or 4unipolar Inductor’ For space physics, the breakdown of this tid picture is a( Interest because it results in the

Al embedded MgO barrier MTJ: A first principle study for application in fast and compact STT-MRAMs

NASA Astrophysics Data System (ADS)

Yadav, Manoj Kumar; Gupta, Santosh Kumar; Rai, Sanjeev; Pandey, Avinash C.

2017-03-01

The first principle comparative study of a novel single Al sheet embedded MgO and pure MgO barrier having Fe electrodes magnetic tunnel junction has been presented. Al embedded MgO is reported to provide enhanced spin polarised tunnelling current due to increase of spin-polarized density of states at Fermi energy in the barrier region. This novel MTJ provides a current density and resistance area (RA) product of 94.497 ×107 A / cm2 and 0.105  Ω - μm2 respectively. With such a low RA product; it allows higher deriving current due to which switching time of magnetization reversal reduces without inducing barrier related breakdowns in non-volatile magnetic random access memories. The low RA product and high current density of the proposed MTJ may have possible applications in integration with existing MOS circuits.

Homogeneous/Inhomogeneous-Structured Dielectrics and their Energy-Storage Performances.

PubMed

Yao, Zhonghua; Song, Zhe; Hao, Hua; Yu, Zhiyong; Cao, Minghe; Zhang, Shujun; Lanagan, Michael T; Liu, Hanxing

2017-05-01

The demand for dielectric capacitors with higher energy-storage capability is increasing for power electronic devices due to the rapid development of electronic industry. Existing dielectrics for high-energy-storage capacitors and potential new capacitor technologies are reviewed toward realizing these goals. Various dielectric materials with desirable permittivity and dielectric breakdown strength potentially meeting the device requirements are discussed. However, some significant limitations for current dielectrics can be ascribed to their low permittivity, low breakdown strength, and high hysteresis loss, which will decrease their energy density and efficiency. Thus, the implementation of dielectric materials for high-energy-density applications requires the comprehensive understanding of both the materials design and processing. The optimization of high-energy-storage dielectrics will have far-reaching impacts on the sustainable energy and will be an important research topic in the near future. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Current-induced changes of migration energy barriers in graphene and carbon nanotubes

NASA Astrophysics Data System (ADS)

Obodo, J. T.; Rungger, I.; Sanvito, S.; Schwingenschlögl, U.

2016-05-01

An electron current can move atoms in a nanoscale device with important consequences for the device operation and breakdown. We perform first principles calculations aimed at evaluating the possibility of changing the energy barriers for atom migration in carbon-based systems. In particular, we consider the migration of adatoms and defects in graphene and carbon nanotubes. Although the current-induced forces are large for both the systems, in graphene the force component along the migration path is small and therefore the barrier height is little affected by the current flow. In contrast, the same barrier is significantly reduced in carbon nanotubes as the current increases. Our work also provides a real-system numerical demonstration that current-induced forces within density functional theory are non-conservative.An electron current can move atoms in a nanoscale device with important consequences for the device operation and breakdown. We perform first principles calculations aimed at evaluating the possibility of changing the energy barriers for atom migration in carbon-based systems. In particular, we consider the migration of adatoms and defects in graphene and carbon nanotubes. Although the current-induced forces are large for both the systems, in graphene the force component along the migration path is small and therefore the barrier height is little affected by the current flow. In contrast, the same barrier is significantly reduced in carbon nanotubes as the current increases. Our work also provides a real-system numerical demonstration that current-induced forces within density functional theory are non-conservative. Electronic supplementary information (ESI) available. See DOI: 10.1039/C6NR00534A

High ESD Breakdown-Voltage InP HBT Transimpedance Amplifier IC for Optical Video Distribution Systems

NASA Astrophysics Data System (ADS)

Sano, Kimikazu; Nagatani, Munehiko; Mutoh, Miwa; Murata, Koichi

This paper is a report on a high ESD breakdown-voltage InP HBT transimpedance amplifier IC for optical video distribution systems. To make ESD breakdown-voltage higher, we designed ESD protection circuits integrated in the TIA IC using base-collector/base-emitter diodes of InP HBTs and resistors. These components for ESD protection circuits have already existed in the employed InP HBT IC process, so no process modifications were needed. Furthermore, to meet requirements for use in optical video distribution systems, we studied circuit design techniques to obtain a good input-output linearity and a low-noise characteristic. Fabricated InP HBT TIA IC exhibited high human-body-model ESD breakdown voltages (±1000V for power supply terminals, ±200V for high-speed input/output terminals), good input-output linearity (less than 2.9-% duty-cycle-distortion), and low noise characteristic (10.7pA/√Hz averaged input-referred noise current density) with a -3-dB-down higher frequency of 6.9GHz. To the best of our knowledge, this paper is the first literature describing InP ICs with high ESD-breakdown voltages.

Directed Self-Assembly of Block Copolymers for High Breakdown Strength Polymer Film Capacitors.

PubMed

Samant, Saumil P; Grabowski, Christopher A; Kisslinger, Kim; Yager, Kevin G; Yuan, Guangcui; Satija, Sushil K; Durstock, Michael F; Raghavan, Dharmaraj; Karim, Alamgir

2016-03-01

Emerging needs for fast charge/discharge yet high-power, lightweight, and flexible electronics requires the use of polymer-film-based solid-state capacitors with high energy densities. Fast charge/discharge rates of film capacitors on the order of microseconds are not achievable with slower charging conventional batteries, supercapacitors and related hybrid technologies. However, the current energy densities of polymer film capacitors fall short of rising demand, and could be significantly enhanced by increasing the breakdown strength (EBD) and dielectric permittivity (εr) of the polymer films. Co-extruded two-homopolymer component multilayered films have demonstrated much promise in this regard showing higher EBD over that of component polymers. Multilayered films can also help incorporate functional features besides energy storage, such as enhanced optical, mechanical, thermal and barrier properties. In this work, we report accomplishing multilayer, multicomponent block copolymer dielectric films (BCDF) with soft-shear driven highly oriented self-assembled lamellar diblock copolymers (BCP) as a novel application of this important class of self-assembling materials. Results of a model PS-b-PMMA system show ∼50% enhancement in EBD of self-assembled multilayer lamellar BCP films compared to unordered as-cast films, indicating that the breakdown is highly sensitive to the nanostructure of the BCP. The enhancement in EBD is attributed to the "barrier effect", where the multiple interfaces between the lamellae block components act as barriers to the dielectric breakdown through the film. The increase in EBD corresponds to more than doubling the energy storage capacity using a straightforward directed self-assembly strategy. This approach opens a new nanomaterial paradigm for designing high energy density dielectric materials.

Directed self-assembly of block copolymers for high breakdown strength polymer film capacitors

DOE PAGES

Samant, Saumil P.; Grabowski, Christopher A.; Kisslinger, Kim; ...

2016-03-04

Emerging needs for fast charge/discharge yet high-power, lightweight, and flexible electronics requires the use of polymer-film-based solid-state capacitors with high energy densities. Fast charge/discharge rates of film capacitors on the order of microseconds are not achievable with slower charging conventional batteries, supercapacitors and related hybrid technologies. However, the current energy densities of polymer film capacitors fall short of rising demand, and could be significantly enhanced by increasing the breakdown strength (E BD) and dielectric permittivity (ε r) of the polymer films. Co-extruded two-homopolymer component multilayered films have demonstrated much promise in this regard showing higher E BD over that ofmore » component polymers. Multilayered films can also help incorporate functional features besides energy storage, such as enhanced optical, mechanical, thermal and barrier properties. In this work, we report accomplishing multilayer, multicomponent block copolymer dielectric films (BCDF) with soft-shear driven highly oriented self-assembled lamellar diblock copolymers (BCP) as a novel application of this important class of self-assembling materials. Results of a model PS- b-PMMA system show ~50% enhancement in E BD of self-assembled multilayer lamellar BCP films compared to unordered as-cast films, indicating that the breakdown is highly sensitive to the nanostructure of the BCP. The enhancement in E BD is attributed to the “barrier effect”, where the multiple interfaces between the lamellae block components act as barriers to the dielectric breakdown through the film. The increase in E BD corresponds to more than doubling the energy storage capacity using a straightforward directed self-assembly strategy. Lastly, this approach opens a new nanomaterial paradigm for designing high energy density dielectric materials.« less

Corrosion behavior and microstructures of experimental Ti-Au alloys.

PubMed

Takahashi, Masatoshi; Kikuchi, Masafumi; Takada, Yukyo; Okuno, Osamu; Okabe, Toru

2004-06-01

Anodic polarization was performed in 0.9% NaCl and 1% lactic acid solutions to characterize the relationship between the corrosion behavior and microstructures of cast Ti-Au (5-40%) alloys. An abrupt increase in the current density occurred at approximately 0.6 V vs. SCE for the 30% and 40% Au alloys in the 0.9% NaCl solution. The microstructures after corrosion testing indicated that this breakdown may have been caused by the preferential dissolution of the Ti3Au. However, the potential for preferential dissolution was higher than the breakdown potential of stainless steel or Co-Cr alloy, which meant that the corrosion resistance of the Ti-Au alloys was superior. In 1% lactic acid solution, the corrosion resistance of the Ti-Au alloys was excellent, with no breakdown at any composition. In the present test solutions, the Ti-Au alloys up to 20% Au had good corrosion resistance comparable to that for pure titanium.

Numerical modeling of high-voltage circuit breaker arcs and their interraction with the power system

NASA Astrophysics Data System (ADS)

Orama, Lionel R.

In this work the interaction between series connected gas and vacuum circuit breaker arcs has been studied. The breakdown phenomena in vacuum interrupters during the post arc current period have been of special interest. Numerical models of gas and vacuum arcs were developed in the form of black box models. Especially, the vacuum post arc model was implemented by combining the existing transition model with an ion density function and expressions for the breakdown mechanisms. The test series studied reflect that for electric fields on the order of 10sp7V/m over the anode, the breakdown of the vacuum gap can result from a combination of both thermal and electrical stresses. For a particular vacuum device, the vacuum model helps to find the interruption limits of the electric field and power density over the anode. The series connection of gas and vacuum interrupters always performs better than the single gas device. Moreover, to take advantage of the good characteristics of both devices, the time between the current zero crossing in each interrupter can be changed. This current zero synchronization is controlled by changing the capacitance in parallel to the gas device. This gas/vacuum interrupter is suitable for interruption of very stressful short circuits in which the product of the dI/dt before current zero and the dV/dt after current zero is very high. Also, a single SF6 interrupter can be replaced by an air circuit breaker of the same voltage rating in series with a vacuum device without compromising the good performance of the SF6 device. Conceptually, a series connected vacuum device can be used for high voltage applications with equal distribution of electrical stresses between the individual interrupters. The equalization can be made by a sequential opening of the individual contact pairs, beginning with the interruptors that are closer to ground potential. This could eliminate the use of grading capacitors.

Interfacially Optimized, High Energy Density Nanoparticle-Polymer Composites for Capacitive Energy Storage

NASA Astrophysics Data System (ADS)

Shipman, Joshua; Riggs, Brian; Luo, Sijun; Adireddy, Shiva; Chrisey, Douglas

Energy storage is a green energy technology, however it must be cost effective and scalable to meet future energy demands. Polymer-nanoparticle composites are low cost and potentially offer high energy storage. This is based on the high breakdown strength of polymers and the high dielectric constant of ceramic nanoparticles, but the incoherent nature of the interface between the two components prevents the realization of their combined full potential. We have created inkjet printable nanoparticle-polymer composites that have mitigated many of these interface effects, guided by first principle modelling of the interface. We detail density functional theory modelling of the interface and how it has guided our use in in specific surface functionalizations and other inorganic layers. We have validated our approach by using finite element analysis of the interface. By choosing the correct surface functionalization we are able to create dipole traps which further increase the breakdown strength of our composites. Our nano-scale understanding has allowed us to create the highest energy density composites currently available (>40 J/cm3).

Investigation of multipactor breakdown in communication satellite microwave co-axial systems

NASA Astrophysics Data System (ADS)

Nagesh, S. K.; Revannasiddiah, D.; Shastry, S. V. K.

2005-01-01

Multipactor breakdown or multipactor discharge is a form of high frequency discharge that may occur in microwave components operating at very low pressures. Some RF components of multi-channel communication satellites have co-axial geometry and handle high RF power under near-vacuum conditions. The breakdown occurs due to secondary electron resonance, wherein electrons move back and forth in synchronism with the RF voltage across the gap between the inner and outer conductors of the co-axial structure. If the yield of secondary electrons from the walls of the co-axial structure is greater than unity, then the electron density increases with time and eventually leads to the breakdown. In this paper, the current due to the oscillating electrons in the co-axial geometry has been treated as a radially oriented Hertzian dipole. The electric field, due to this dipole, at any point in the coaxial structure, may then be determined by employing the dyadic Green's function technique. This field has been compared with the field that would exist in the absence of multipactor.

Study on the influence of three-grid assembly thermal deformation on breakdown times and an ion extraction process

NASA Astrophysics Data System (ADS)

Mingming, SUN; Yanhui, JIA; Yongjie, HUANG; Juntai, YANG; Xiaodong, WEN; Meng, WANG

2018-04-01

In order to study the influence of three-grid assembly thermal deformation caused by heat accumulation on breakdown times and an ion extraction process, a hot gap test and a breakdown time test are carried out to obtain thermal deformation of the grids when the thruster is in 5 kW operation mode. Meanwhile, the fluid simulation method and particle-in-cell-Monte Carlo collision (PIC-MCC) method are adopted to simulate the ion extraction process according to the previous test results. The numerical calculation results are verified by the ion thruster performance test. The results show that after about 1.2 h operation, the hot gap between the screen grid and the accelerator grid reduce to 0.25–0.3 mm, while the hot gap between the accelerator grid and the decelerator grid increase from 1 mm to about 1.4 mm when the grids reach thermal equilibrium, and the hot gap is almost unchanged. In addition, the breakdown times experiment shows that 0.26 mm is the minimal safe hot gap for the grid assembly as the breakdown times improves significantly when the gap is smaller than this value. Fluid simulation results show that the plasma density of the screen grid is in the range 6 × 1017–6 × 1018 m13 and displays a parabolic characteristic, while the electron temperature gradually increases along the axial direction. The PIC-MCC results show that the current falling of an ion beam through a single aperture is significant. Meanwhile, the intercepted current of the accelerator grid and the decelerator grid both increase with the change in the hot gap. The ion beam current has optimal perveance status without thermal deformation, and the intercepted current of the accelerator grid and the decelerator grid are 3.65 mA and 6.26 mA, respectively. Furthermore, under the effect of thermal deformation, the ion beam current has over-perveance status, and the intercepted current of the accelerator grid and the decelerator grid are 10.46 mA and 18.24 mA, respectively. Performance test results indicate that the breakdown times increase obviously. The intercepted current of the accelerator grid and the decelerator grid increases to 13 mA and 16.5 mA, respectively, due to the change in the hot gap after 1.5 h operation. The numerical calculation results are well consistent with performance test results, and the error comes mainly from the test uncertainty of the hot gap.

The Breakdown Characteristics of the Silicone Oil for Electric Power Apparatus

NASA Astrophysics Data System (ADS)

Yoshida, Hisashi; Yanabu, Satoru

The basic breakdown characteristics of the silicone oil as an insulating medium was studied with aim of realization of electric power apparatus which may be considered to be SF6 free and flame-retarding. As the first step, the impulse breakdown characteristics was measured with three kinds of electrodes whose electric field distributions differed. The breakdown characteristics in silicone oil was explained in relation to stressed oil volume (SOV) and the breakdown stress. At the second step the surface breakdown characteristic for impulse voltage was measured with two kinds of insulators which was set to between plane electrodes. The surface breakdown characteristic for impulse voltage was explained in relation to the ratio of the relative permittivity of oil and insulator. And on the third step, the breakdown characteristics of oil gap after interrupting small capacitive current was studied. In this experiment, the disconnecting switch to interrupt capacitive current was simulated by oil gap after interrupting impulse current, and to measure breakdown characteristics the high impulse voltage was subsequently applied. The breakdown stress in silicone oil after application of impulse current was discussed for insulation recovery characteristics.

Novel trench gate field stop IGBT with trench shorted anode

NASA Astrophysics Data System (ADS)

Xudong, Chen; Jianbing, Cheng; Guobing, Teng; Houdong, Guo

2016-05-01

A novel trench field stop (FS) insulated gate bipolar transistor (IGBT) with a trench shorted anode (TSA) is proposed. By introducing a trench shorted anode, the TSA-FS-IGBT can obviously improve the breakdown voltage. As the simulation results show, the breakdown voltage is improved by a factor of 19.5% with a lower leakage current compared with the conventional FS-IGBT. The turn off time of the proposed structure is 50% lower than the conventional one with less than 9% voltage drop increased at a current density of 150 A/cm2. Additionally, there is no snapback observed. As a result, the TSA-FS-IGBT has a better trade-off relationship between the turn off loss and forward drop. Project supported by the National Natural Science Foundation of China (No. 61274080) and the Postdoctoral Science Foundation of China (No. 2013M541585).

Study of Bulk and Elementary Screw Dislocation Assisted Reverse Breakdown in Low-Voltage (< 250 V) 4H-SiC p(sup +)n Junction Diodes--Part II: Dynamic Breakdown Properties. Part 2; Dynamic Breakdown Properties

NASA Technical Reports Server (NTRS)

Neudeck, Philip G.; Fazi, Christian

1999-01-01

This paper outlines the dynamic reverse-breakdown characteristics of low-voltage (<250 V) small-area <5 x 10(exp -4) sq cm 4H-SiC p(sup +)n diodes subjected to nonadiabatic breakdown-bias pulsewidths ranging from 0.1 to 20 microseconds. 4H-SiC diodes with and without elementary screw dislocations exhibited positive temperature coefficient of breakdown voltage and high junction failure power densities approximately five times larger than the average failure power density of reliable silicon pn rectifiers. This result indicates that highly reliable low-voltage SiC rectifiers may be attainable despite the presence of elementary screw dislocations. However, the impact of elementary screw dislocations on other more useful 4H-SiC power device structures, such as high-voltage (>1 kV) pn junction and Schottky rectifiers, and bipolar gain devices (thyristors, IGBT's, etc.) remains to be investigated.

Van der Waals heterojunction diode composed of WS2 flake placed on p-type Si substrate

NASA Astrophysics Data System (ADS)

Aftab, Sikandar; Farooq Khan, M.; Min, Kyung-Ah; Nazir, Ghazanfar; Afzal, Amir Muhammad; Dastgeer, Ghulam; Akhtar, Imtisal; Seo, Yongho; Hong, Suklyun; Eom, Jonghwa

2018-01-01

P-N junctions represent the fundamental building blocks of most semiconductors for optoelectronic functions. This work demonstrates a technique for forming a WS2/Si van der Waals junction based on mechanical exfoliation. Multilayered WS2 nanoflakes were exfoliated on the surface of bulk p-type Si substrates using a polydimethylsiloxane stamp. We found that the fabricated WS2/Si p-n junctions exhibited rectifying characteristics. We studied the effect of annealing processes on the performance of the WS2/Si van der Waals p-n junction and demonstrated that annealing improved its electrical characteristics. However, devices with vacuum annealing have an enhanced forward-bias current compared to those annealed in a gaseous environment. We also studied the top-gate-tunable rectification characteristics across the p-n junction interface in experiments as well as density functional theory calculations. Under various temperatures, Zener breakdown occurred at low reverse-bias voltages, and its breakdown voltage exhibited a negative coefficient of temperature. Another breakdown voltage was observed, which increased with temperature, suggesting a positive coefficient of temperature. Therefore, such a breakdown can be assigned to avalanche breakdown. This work demonstrates a promising application of two-dimensional materials placed directly on conventional bulk Si substrates.

Low Gain Avalanche Detectors (LGAD) for particle physics and synchrotron applications

NASA Astrophysics Data System (ADS)

Moffat, N.; Bates, R.; Bullough, M.; Flores, L.; Maneuski, D.; Simon, L.; Tartoni, N.; Doherty, F.; Ashby, J.

2018-03-01

A new avalanche silicon detector concept is introduced with a low gain in the region of ten, known as a Low Gain Avalanche Detector, LGAD. The detector's characteristics are simulated via a full process simulation to obtain the required doping profiles which demonstrate the desired operational characteristics of high breakdown voltage (500 V) and a gain of 10 at 200 V reverse bias for X-ray detection. The first low gain avalanche detectors fabricated by Micron Semiconductor Ltd are presented. The doping profiles of the multiplication junctions were measured with SIMS and reproduced by simulating the full fabrication process which enabled further development of the manufacturing process. The detectors are 300 μm thick p-type silicon with a resistivity of 8.5 kΩcm, which fully depletes at 116 V. The current characteristics are presented and demonstrate breakdown voltages in excess of 500 V and a current density of 40 to 100 nAcm‑2 before breakdown measured at 20oC. The gain of the LGAD has been measured with a red laser (660 nm) and shown to be between 9 and 12 for an external bias voltage range from 150 V to 300 V.

Electric Characteristic Enhancement of an AZO/Si Schottky Barrier Diode with Hydrogen Plasma Surface Treatment and AlxOx Guard Ring Structure

PubMed Central

Li, Chien-Yu; Cheng, Min-Yu; Houng, Mau-Phon; Yang, Cheng-Fu; Liu, Jing

2018-01-01

In this study, the design and fabrication of AZO/n-Si Schottky barrier diodes (SBDs) with hydrogen plasma treatment on silicon surface and AlxOx guard ring were presented. The Si surface exhibited less interface defects after the cleaning process following with 30 w of H2 plasma treatment that improved the switching properties of the following formed SBDs. The rapid thermal annealing experiment also held at 400 °C to enhance the breakdown voltage of SBDs. The edge effect of the SBDs was also suppressed with the AlxOx guard ring structure deposited by the atomic layer deposition (ALD) at the side of the SBDs. Experimental results show that the reverse leakage current was reduced and the breakdown voltage increased with an addition of the AlxOx guard ring. The diode and fabrication technology developed in the study were applicable to the realization of SBDs with a high breakdown voltage (>200 V), a low reverse leakage current density (≤72 μA/mm2@100 V), and a Schottky barrier height of 1.074 eV. PMID:29316726

Electric Characteristic Enhancement of an AZO/Si Schottky Barrier Diode with Hydrogen Plasma Surface Treatment and AlxOx Guard Ring Structure.

PubMed

Li, Chien-Yu; Cheng, Min-Yu; Houng, Mau-Phon; Yang, Cheng-Fu; Liu, Jing

2018-01-08

In this study, the design and fabrication of AZO/n-Si Schottky barrier diodes (SBDs) with hydrogen plasma treatment on silicon surface and Al x O x guard ring were presented. The Si surface exhibited less interface defects after the cleaning process following with 30 w of H₂ plasma treatment that improved the switching properties of the following formed SBDs. The rapid thermal annealing experiment also held at 400 °C to enhance the breakdown voltage of SBDs. The edge effect of the SBDs was also suppressed with the Al x O x guard ring structure deposited by the atomic layer deposition (ALD) at the side of the SBDs. Experimental results show that the reverse leakage current was reduced and the breakdown voltage increased with an addition of the Al x O x guard ring. The diode and fabrication technology developed in the study were applicable to the realization of SBDs with a high breakdown voltage (>200 V), a low reverse leakage current density (≤72 μA/mm²@100 V), and a Schottky barrier height of 1.074 eV.

Effect of current density on electron beam induced charging in MgO

NASA Astrophysics Data System (ADS)

Boughariou, Aicha; Hachicha, Olfa; Kallel, Ali; Blaise, Guy

2005-11-01

It is well known that the presence of space charge in an insulator is correlated with an electric breakdown. Many studies have been carried out on the experimental characterization of space charges. In this paper, we outline the dependence on the current density of the charge-trapping phenomenon in magnesium oxide. Our study was performed with a dedicated scanning electron microscope (SEM) on the electrical property evolution of surface of magnesium oxide (1 0 0) (MgO) single crystal, during a 1.1, 5 and 30 keV electron irradiation. The types of charges trapped on the irradiated areas and the charging kinetics are determined by measuring the total secondary electron emission (SEE) σ during the injection process by means of two complementary detectors. At low energies 1.1 and 5 keV, two different kinds of self-regulated regime (σ = 1) were observed as a function of current density. At 30 keV energy, the electron emission appears to be stimulated by the current density, due to the Poole-Frenkel effect.

Role of lead in electrochemical reaction of alloy 600, alloy 690, Ni, Cr, and Fe in water

NASA Astrophysics Data System (ADS)

Hwang, Seong Sik; Kim, Joung Soo; Kim, Ju Yup

2003-08-01

It has been reported that lead causes stress corrosion cracking (SCC) in the secondary side of steam generators (SG) in pressurized water reactors (PWR). The materials of SG tubings are alloy 600, alloy 690, or alloy 800, among which the main alloying elements are Ni, Cr, and Fe. The effect of lead on the electrochemical behaviors of alloy 600 and alloy 690 using an anodic polarization technique was evaluated. We also obtained polarization curves of pure Ni, Cr, and Fe in water containing lead. As the amount of lead in the solution increased, critical current densities and passive current densities of alloy 600 and alloy 690 increased, while the breakdown potential of the alloys decreased. Lead increased critical current density and the passive current of Cr in pH 4 and pH 10. The instability of passive film of steam generator tubings in water containing lead might arise from the instability of Cr passivity.

Laser collisional induced fluorescence electron density measurements as a function of ring bias and the onset of anode spot formation in a ring cusp magnetic field

NASA Astrophysics Data System (ADS)

Arthur, N. A.; Foster, J. E.; Barnat, E. V.

2018-05-01

Two-dimensional electron density measurements are made in a magnetic ring cusp discharge using laser collisional induced fluorescence. The magnet rings are isolated from the anode structure such that they can be biased independently in order to modulate electron flows through the magnetic cusps. Electron density images are captured as a function of bias voltage in order to assess the effects of current flow through the cusp on the spatial extent of the cusp. We anticipated that for a fixed current density being funneled through the magnetic cusp, the leak width would necessarily increase. Unexpectedly, the leak width, as measured by LCIF images, does not increase. This suggests that the current density is not constant, and that possibly either electrons are being heated or additional ionization events are occurring within the cusp. Spatially resolving electron temperature would be needed to determine if electrons are being heated within the cusp. We also observe breakdown of the anode magnetosheath and formation of anode spots at high bias voltage.

Impact of defects on the electrical transport, optical properties and failure mechanisms of GaN nanowires.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Armstrong, Andrew M.; Aubry, Sylvie; Shaner, Eric Arthur

2010-09-01

We present the results of a three year LDRD project that focused on understanding the impact of defects on the electrical, optical and thermal properties of GaN-based nanowires (NWs). We describe the development and application of a host of experimental techniques to quantify and understand the physics of defects and thermal transport in GaN NWs. We also present the development of analytical models and computational studies of thermal conductivity in GaN NWs. Finally, we present an atomistic model for GaN NW electrical breakdown supported with experimental evidence. GaN-based nanowires are attractive for applications requiring compact, high-current density devices such asmore » ultraviolet laser arrays. Understanding GaN nanowire failure at high-current density is crucial to developing nanowire (NW) devices. Nanowire device failure is likely more complex than thin film due to the prominence of surface effects and enhanced interaction among point defects. Understanding the impact of surfaces and point defects on nanowire thermal and electrical transport is the first step toward rational control and mitigation of device failure mechanisms. However, investigating defects in GaN NWs is extremely challenging because conventional defect spectroscopy techniques are unsuitable for wide-bandgap nanostructures. To understand NW breakdown, the influence of pre-existing and emergent defects during high current stress on NW properties will be investigated. Acute sensitivity of NW thermal conductivity to point-defect density is expected due to the lack of threading dislocation (TD) gettering sites, and enhanced phonon-surface scattering further inhibits thermal transport. Excess defect creation during Joule heating could further degrade thermal conductivity, producing a viscous cycle culminating in catastrophic breakdown. To investigate these issues, a unique combination of electron microscopy, scanning luminescence and photoconductivity implemented at the nanoscale will be used in concert with sophisticated molecular-dynamics calculations of surface and defect-mediated NW thermal transport. This proposal seeks to elucidate long standing material science questions for GaN while addressing issues critical to realizing reliable GaN NW devices.« less

Modeling and Numerical Simulation of Microwave Pulse Propagation in Air Breakdown Environment

NASA Technical Reports Server (NTRS)

Kuo, S. P.; Kim, J.

1991-01-01

Numerical simulation is used to investigate the extent of the electron density at a distant altitude location which can be generated by a high-power ground-transmitted microwave pulse. This is done by varying the power, width, shape, and carrier frequency of the pulse. The results show that once the breakdown threshold field is exceeded in the region below the desired altitude location, electron density starts to build up in that region through cascading breakdown. The generated plasma attenuates the pulse energy (tail erosion) and thus deteriorates the energy transmission to the destined altitude. The electron density saturates at a level limited by the pulse width and the tail erosion process. As the pulse continues to travel upward, though the breakdown threshold field of the background air decreases, the pulse energy (width) is reduced more severely by the tail erosion process. Thus, the electron density grows more quickly at the higher altitude, but saturates at a lower level. Consequently, the maximum electron density produced by a single pulse at 50 km altitude, for instance, is limited to a value below 10(exp 6) cm(exp -3). Three different approaches are examined to determine if the ionization at the destined location can be improved: a repetitive pulse approach, a focused pulse approach, and two intersecting beams. Only the intersecting beam approach is found to be practical for generating the desired density level.

CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES: A super junction SiGe low-loss fast switching power diode

NASA Astrophysics Data System (ADS)

Ma, Li; Gao, Yong

2009-01-01

This paper proposes a novel super junction (SJ) SiGe switching power diode which has a columnar structure of alternating p- and n- doped pillar substituting conventional n- base region and has far thinner strained SiGe p+ layer to overcome the drawbacks of existing Si switching power diode. The SJ SiGe diode can achieve low specific on-resistance, high breakdown voltages and fast switching speed. The results indicate that the forward voltage drop of SJ SiGe diode is much lower than that of conventional Si power diode when the operating current densities do not exceed 1000 A/cm2, which is very good for getting lower operating loss. The forward voltage drop of the Si diode is 0.66 V whereas that of the SJ SiGe diode is only 0.52 V at operating current density of 10 A/cm2. The breakdown voltages are 203 V for the former and 235 V for the latter. Compared with the conventional Si power diode, the reverse recovery time of SJ SiGe diode with 20 per cent Ge content is shortened by above a half and the peak reverse current is reduced by over 15%. The SJ SiGe diode can remarkably improve the characteristics of power diode by combining the merits of both SJ structure and SiGe material.

Structural evolution of nanoporous ultra-low k dielectrics under voltage stress

NASA Astrophysics Data System (ADS)

Raja, Archana; Shaw, Thomas; Grill, Alfred; Laibowitz, Robert; Heinz, Tony

2013-03-01

High speed interconnects in advanced integrated circuits require ultra-low-k dielectrics. Reduction of the dielectric constant is achieved via incorporation of nanopores in structures containing silicon, carbon, oxygen and hydrogen (SiCOH). We study nanoporous SiCOH films of k=2.5 and thicknesses of 40 - 400 nm. Leakage currents develop in the films under long-term voltage stress, eventually leading to breakdown and chip failure. Previous work* has shown the build-up of trap states as dielectric breakdown progresses. Using FTIR spectroscopy we have tracked the reorganization of the bonds in the SiCOH networks induced by voltage stress. Our results indicate that the cleavage of the Si-C and SiC-O bonds contribute toward increase in the density of bulk trapping states as breakdown is approached. AC conductance and capacitance measurements have also been carried out to describe interfacial and bulk traps and mechanisms. Comparison of breakdown properties of films with differing carbon content will also be presented to further delineate the role of carbon. *Atkin, J.M.; Shaw, T.M.; Liniger, E.; Laibowitz, R.B.; Heinz, T.F. Reliability Physics Symposium (IRPS), 2012 IEEE International Supported by the Semiconductor Research Corporation

Current collection by high voltage anodes in near ionospheric conditions

NASA Technical Reports Server (NTRS)

Antoniades, John A.; Greaves, Rod G.; Boyd, D. A.; Ellis, R.

1990-01-01

The authors experimentally identified three distinct regimes with large differences in current collection in the presence of neutrals and weak magnetic fields. In magnetic field/anode voltage space the three regions are separated by very sharp transition boundaries. The authors performed a series of laboratory experiments to study the dependence of the region boundaries on several parameters, such as the ambient neutral density, plasma density, magnetic field strength, applied anode voltage, voltage pulsewidth, chamber material, chamber size and anode radius. The three observed regimes are: classical magnetic field limited collection; stable medium current toroidal discharge; and large scale, high current space glow discharge. There is as much as several orders of magnitude of difference in the amount of collected current upon any boundary crossing, particularly if one enters the space glow regime. They measured some of the properties of the plasma generated by the breakdown that is present in regimes II and III in the vicinity of the anode including the sheath modified electrostatic potential, I-V characteristics at high voltage as well as the local plasma density.

Cathode fall model and current-voltage characteristics of field emission driven direct current microplasmas

DOE Office of Scientific and Technical Information (OSTI.GOV)

Venkattraman, Ayyaswamy

2013-11-15

The post-breakdown characteristics of field emission driven microplasma are studied theoretically and numerically. A cathode fall model assuming a linearly varying electric field is used to obtain equations governing the operation of steady state field emission driven microplasmas. The results obtained from the model by solving these equations are compared with particle-in-cell with Monte Carlo collisions simulation results for parameters including the plasma potential, cathode fall thickness, ion number density in the cathode fall, and current density vs voltage curves. The model shows good overall agreement with the simulations but results in slightly overpredicted values for the plasma potential andmore » the cathode fall thickness attributed to the assumed electric field profile. The current density vs voltage curves obtained show an arc region characterized by negative slope as well as an abnormal glow discharge characterized by a positive slope in gaps as small as 10 μm operating at atmospheric pressure. The model also retrieves the traditional macroscale current vs voltage theory in the absence of field emission.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Samant, Saumil P.; Grabowski, Christopher A.; Kisslinger, Kim

Emerging needs for fast charge/discharge yet high-power, lightweight, and flexible electronics requires the use of polymer-film-based solid-state capacitors with high energy densities. Fast charge/discharge rates of film capacitors on the order of microseconds are not achievable with slower charging conventional batteries, supercapacitors and related hybrid technologies. However, the current energy densities of polymer film capacitors fall short of rising demand, and could be significantly enhanced by increasing the breakdown strength (E BD) and dielectric permittivity (ε r) of the polymer films. Co-extruded two-homopolymer component multilayered films have demonstrated much promise in this regard showing higher E BD over that ofmore » component polymers. Multilayered films can also help incorporate functional features besides energy storage, such as enhanced optical, mechanical, thermal and barrier properties. In this work, we report accomplishing multilayer, multicomponent block copolymer dielectric films (BCDF) with soft-shear driven highly oriented self-assembled lamellar diblock copolymers (BCP) as a novel application of this important class of self-assembling materials. Results of a model PS-b-PMMA system show ~50% enhancement in E BD of self-assembled multilayer lamellar BCP films compared to unordered as-cast films, indicating that the breakdown is highly sensitive to the nanostructure of the BCP. The enhancement in E BD is attributed to the “barrier effect”, where the multiple interfaces between the lamellae block components act as barriers to the dielectric breakdown through the film. The increase in E BD corresponds to more than doubling the energy storage capacity using a straightforward directed self-assembly strategy. This approach opens a new nanomaterial paradigm for designing high energy density dielectric materials.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Samant, Saumil P.; Grabowski, Christopher A.; Kisslinger, Kim

Emerging needs for fast charge/discharge yet high-power, lightweight, and flexible electronics requires the use of polymer-film-based solid-state capacitors with high energy densities. Fast charge/discharge rates of film capacitors on the order of microseconds are not achievable with slower charging conventional batteries, supercapacitors and related hybrid technologies. However, the current energy densities of polymer film capacitors fall short of rising demand, and could be significantly enhanced by increasing the breakdown strength (E BD) and dielectric permittivity (ε r) of the polymer films. Co-extruded two-homopolymer component multilayered films have demonstrated much promise in this regard showing higher E BD over that ofmore » component polymers. Multilayered films can also help incorporate functional features besides energy storage, such as enhanced optical, mechanical, thermal and barrier properties. In this work, we report accomplishing multilayer, multicomponent block copolymer dielectric films (BCDF) with soft-shear driven highly oriented self-assembled lamellar diblock copolymers (BCP) as a novel application of this important class of self-assembling materials. Results of a model PS- b-PMMA system show ~50% enhancement in E BD of self-assembled multilayer lamellar BCP films compared to unordered as-cast films, indicating that the breakdown is highly sensitive to the nanostructure of the BCP. The enhancement in E BD is attributed to the “barrier effect”, where the multiple interfaces between the lamellae block components act as barriers to the dielectric breakdown through the film. The increase in E BD corresponds to more than doubling the energy storage capacity using a straightforward directed self-assembly strategy. Lastly, this approach opens a new nanomaterial paradigm for designing high energy density dielectric materials.« less

Influence of a surface film on the particles on the electrorheological response

NASA Astrophysics Data System (ADS)

Wu, C. W.; Conrad, H.

1997-01-01

A conduction model is developed for the dc electrorheological (ER) response of highly conducting particles (e.g., metal particles) suspended in a weakly conducting oil. The numerical analyses show that a surface film with some conductivity is desired, but not a completely insulating film as previously proposed. Increasing the film conductivity leads to an increase in the ER yield stress. However, too high a conductivity will give an unacceptable level of current density. The film should also have an intermediate thickness. A small thickness increases the possibility of electrical breakdown in the film; too large a thickness decreases the ER effect. Good agreement exists between the yield stress and the current density predicted by our model and those measured.

Low Current Surface Flashover for Initiation of Electric Propulsion Devices

NASA Astrophysics Data System (ADS)

Dary, Omar G.

There has been a recent increase in interest in miniaturization of propulsion systems for satellites. These systems are needed to propel micro- and nano-satellites, where platforms are much smaller than conventional satellites and require smaller levels of thrust. Micro-propulsion systems for these satellites are in their infancy and they must manage with smaller power systems and smaller propellant volumes. Electric propulsion systems operating on various types of electric discharges are typically used for these needs. One of the central components of such electrical micropropulsion systems are ignitor subsystems, which are required for creation the breakdown and initiation of the main discharge. Ignitors have to provide reliable ignition for entire lifetime of the micropropulsion system. Electric breakdown in vacuum usually require high voltage potentials of hundreds of kilovolts per mm to induce breakdown. The breakdown voltage can be significantly decreased (down to several kVs per mm) if dielectric surface flashover is utilized. However, classical dielectric surface flashover operates at large electric current (100s of Amperes) and associated with overheating and damage of the electrodes/dielectric assembly after several flashover events. The central idea of this work was to eliminate the damage to the flashover electrode assembly by limiting the flashover currents to low values in milliampere range (Low Current Surface Flashover -LCSF) and utilize LCSF system as an ignition source for the main discharge on the micropropulsion system. The main objective of this research was to create a robust LCSF ignition system, capable producing a large number of surface flashover triggering events without significant damage to the LCSF electrode assembly. The thesis aims to characterize the plasma plume created at LCSF, study electrodes ablation and identify conditions required for robust triggering of main discharge utilized on micro-propulsion system. Conditioning of a new LCSF assembly (flashover current was limited to <100 mA in all experiments) was measured and breakdown voltages in the range of 8kV to 12kV were observed for the fully conditioned assembly. No damage to the LCSF electrode assembly was observed after about 104 LCSF events. The LCSF assembly created sufficient amount of seed plasma in order to bridge a vacuum gap between the high-current electrodes and to reliably ignite high-current arcs (10A-12A arc were used in this work). Ignition of the high-current arc was observed at three different cases of LCSF with limiting currents 100 mA, 33 mA and 20 mA respectively. Plasma parameter measurements were conducted with variety of Langmuir probes inside the LCSF plume. Ion currents created by the LCSF were primarily expelled directly perpendicular from the insulator surface. The plasma expansion for the LCSF assembly was measured to be 2 x 106-6 x 106 cm/s. Plasma density was measured to range 10 10-1011 cm-3. The plasma density was maximal near the LCSF assembly and quickly reduced radially. Temporal decay of the plasma was observed on a time scale of about 5 micros after the LCSF event. The results of this work are significant for creation of ignitor for micropropulsion systems. LCSF system offers reliable triggering for numerous ignition pulses for entire lifetime of the micropropulsion system and reduces complexity and volume of the system by excluding moving parts and the need for an external gas tanks.

Arrays of Synthetic Atoms: Nanocapacitor Batteries with Large Energy Density and Small Leak Currents

DTIC Science & Technology

2017-11-28

is exempt from public affairs security and policy review in accordance with AFI 61-201, paragraph 2.3.5.1. This report is available to the general... AVAILABILITY STATEMENT Approved for public release; distribution is unlimited. 13. SUPPLEMENTARY NOTES 14. ABSTRACT We assembled nanocapacitors with...of its performance data with theoretical predictions. We investigated recovery of alumina nanocapacitors after high -voltage breakdown. Previously

Stacked switchable element and diode combination with a low breakdown switchable element

DOEpatents

Wang, Qi [Littleton, CO; Ward, James Scott [Englewood, CO; Hu, Jian [Englewood, CO; Branz, Howard M [Boulder, CO

2012-06-19

A device (10) comprises a semiconductor diode (12) and a switchable element (14) positioned in stacked adjacent relationship. The semiconductor diode (12) and the switchable element (14) are electrically connected in series with one another. The switchable element (14) is switchable from a low-conductance state to a high-conductance state in response to the application of a low-density forming current and/or a low voltage.

Demonstration of β-(AlxGa1-x)2O3/Ga2O3 double heterostructure field effect transistors

NASA Astrophysics Data System (ADS)

Zhang, Yuewei; Joishi, Chandan; Xia, Zhanbo; Brenner, Mark; Lodha, Saurabh; Rajan, Siddharth

2018-06-01

In this work, we demonstrate modulation-doped β-(AlxGa1-x)2O3/Ga2O3 double heterostructure field effect transistors. The maximum sheet carrier density for a two-dimensional electron gas (2DEG) in a β-(AlxGa1-x)2O3/Ga2O3 heterostructure is limited by the conduction band offset and parasitic channel formation in the barrier layer. We demonstrate a double heterostructure to realize a β-(AlxGa1-x)2O3/Ga2O3/(AlxGa1-x)2O3 quantum well, where electrons can be transferred from below and above the β-Ga2O3 quantum well. The confined 2DEG charge density of 3.85 × 1012 cm-2 was estimated from the low-temperature Hall measurement, which is higher than that achievable in a single heterostructure. Hall mobilities of 1775 cm2/V.s at 40 K and 123 cm2/V.s at room temperature were measured. Modulation-doped double heterostructure field effect transistors showed a maximum drain current of IDS = 257 mA/mm, a peak transconductance (gm) of 39 mS/mm, and a pinch-off voltage of -7.0 V at room temperature. The three-terminal off-state breakdown measurement on the device with a gate-drain spacing (LGD) of 1.55 μm showed a breakdown voltage of 428 V, corresponding to an average breakdown field of 2.8 MV/cm. The breakdown measurement on the device with a scaled gate-drain spacing of 196 nm indicated an average breakdown field of 3.2 MV/cm. The demonstrated modulation-doped β-(AlxGa1-x)2O3/Ga2O3 double heterostructure field effect transistor could act as a promising candidate for high power and high frequency device applications.

Blackbody emission from laser breakdown in high-pressure gases.

PubMed

Bataller, A; Plateau, G R; Kappus, B; Putterman, S

2014-08-15

Laser induced breakdown of pressurized gases is used to generate plasmas under conditions where the atomic density and temperature are similar to those found in sonoluminescing bubbles. Calibrated streak spectroscopy reveals that a blackbody persists well after the exciting femtosecond laser pulse has turned off. Deviation from Saha's equation of state and an accompanying large reduction in ionization potential are observed at unexpectedly low atomic densities-in parallel with sonoluminescence. In laser breakdown, energy input proceeds via excitation of electrons whereas in sonoluminescence it is initiated via the atoms. The similar responses indicate that these systems are revealing the thermodynamics and transport of a strongly coupled plasma.

Step buffer layer of Al0.25Ga0.75N/Al0.08Ga0.92N on P-InAlN gate normally-off high electron mobility transistors

NASA Astrophysics Data System (ADS)

Shrestha, Niraj M.; Li, Yiming; Chang, E. Y.

2016-07-01

Normally-off AlGaN/GaN high electron mobility transistors (HEMTs) are indispensable devices for power electronics as they can greatly simplify circuit designs in a cost-effective way. In this work, the electrical characteristics of p-type InAlN gate normally-off AlGaN/GaN HEMTs with a step buffer layer of Al0.25Ga0.75N/Al0.1Ga0.9N is studied numerically. Our device simulation shows that a p-InAlN gate with a step buffer layer allows the transistor to possess normally-off behavior with high drain current and high breakdown voltage simultaneously. The gate modulation by the p-InAlN gate and the induced holes appearing beneath the gate at the GaN/Al0.25Ga0.75N interface is because a hole appearing in the p-InAlN layer can effectively vary the threshold voltage positively. The estimated threshold voltage of the normally-off HEMTs explored is 2.5 V at a drain bias of 25 V, which is 220% higher than the conventional p-AlGaN normally-off AlGaN/GaN gate injection transistor (GIT). Concurrently, the maximum current density of the explored HEMT at a drain bias of 10 V slightly decreases by about 7% (from 240 to 223 mA mm-1). At a drain bias of 15 V, the current density reached 263 mA mm-1. The explored structure is promising owing to tunable positive threshold voltage and the maintenance of similar current density; notably, its breakdown voltage significantly increases by 36% (from 800 V, GIT, to 1086 V). The engineering findings of this study indicate that novel p-InAlN for both the gate and the step buffer layer can feature a high threshold voltage, large current density and high operating voltage for advanced AlGaN/GaN HEMT devices.

Standoff Detection of Geological Samples of Metal, Rock, and Soil at Low Pressures Using Laser-Induced Breakdown Spectroscopy.

PubMed

Choi, Jae-Jun; Choi, Soo-Jin; Yoh, Jack J

2016-09-01

Categorized certified reference materials simulating metal, rock, soils, or dusts are used to demonstrate the standoff detection capability of laser-induced breakdown spectroscopy (LIBS) at severely low pressure conditions. A Q-switched Nd:YAG laser operating at 1064 nm with 17.2-50 mJ energy per pulse was used to obtain sample signals from a distance of 5.5 m; the detection sensitivity at pressures down to 0.01 torr was also analyzed. The signal intensity response to pressure changes is explained by the ionization energy and electronegativity of elements, and from the estimated full width half-maximum (FWHM) and electron density, the decrease in both background noise and line broadening makes it suitable for low pressure detection using the current standoff LIBS configuration. The univariate analyses further showed high correlation coefficients for geological samples. Therefore, the present work has extended the current state-of-the-art of standoff LIBS aimed at harsh environment detection. © The Author(s) 2016.

Bulk charging and breakdown in electron-irradiated polymers

NASA Technical Reports Server (NTRS)

Frederickson, A. R.

1981-01-01

High energy electron irradiations were performed in an experimental and theoretical study of ten common polymers. Breakdowns were monitored by measuring currents between the electrodes on each side of the planar samples. Sample currents as a function of time during irradiation are compared with theory. Breakdowns are correlated with space charge electric field strength and polarity. Major findings include evidence that all polymers tested broke down, breakdowns remove negligible bulk charge and no breakdowns are seen below 20 million V/m.

Structural transitions in electron beam deposited Co-carbonyl suspended nanowires at high electrical current densities.

PubMed

Gazzadi, Gian Carlo; Frabboni, Stefano

2015-01-01

Suspended nanowires (SNWs) have been deposited from Co-carbonyl precursor (Co2(CO)8) by focused electron beam induced deposition (FEBID). The SNWs dimensions are about 30-50 nm in diameter and 600-850 nm in length. The as-deposited material has a nanogranular structure of mixed face-centered cubic (FCC) and hexagonal close-packed (HCP) Co phases, and a composition of 80 atom % Co, 15 atom % O and 5 atom % C, as revealed by transmission electron microscopy (TEM) analysis and by energy-dispersive X-ray (EDX) spectroscopy, respectively. Current (I)-voltage (V) measurements with current densities up to 10(7) A/cm(2) determine different structural transitions in the SNWs, depending on the I-V history. A single measurement with a sudden current burst leads to a polycrystalline FCC Co structure extended over the whole wire. Repeated measurements at increasing currents produce wires with a split structure: one half is polycrystalline FCC Co and the other half is graphitized C. The breakdown current density is found at 2.1 × 10(7) A/cm(2). The role played by resistive heating and electromigration in these transitions is discussed.

Growth of large-scale nanotwinned Cu nanowire arrays from anodic aluminum oxide membrane by electrochemical deposition process: controllable nanotwin density and growth orientation with enhanced electrical endurance performance

NASA Astrophysics Data System (ADS)

Chan, Tsung-Cheng; Lin, Yen-Miao; Tsai, Hung-Wei; Wang, Zhiming M.; Liao, Chien-Neng; Chueh, Yu-Lun

2014-06-01

Densely nanotwinned Cu nanowire (NW) arrays with an identical diameter of ~55 nm were fabricated by pulse electrochemical deposition at low temperature using anodic aluminum oxide as a template. Different growth orientations of nanotwinned Cu nanowire arrays were investigated. The endurance of the electrical current density before breakdown of the nanotwinned Cu NWs can reach up to 2.4 × 108 A cm-2. The formation of highly dense nanotwins is attributed to relaxation of coalescence induced stress and twin fault stacking when Cu NWs grow by two-dimensional kinetics. A mechanism based on the twinning structure effect on the electromigration was proposed to explain the improved electrical endurance of Cu. The result demonstrates that the formation of nanotwins into Cu NWs can effectively suppress the void growth, leading to extended life time for use in electronic devices.Densely nanotwinned Cu nanowire (NW) arrays with an identical diameter of ~55 nm were fabricated by pulse electrochemical deposition at low temperature using anodic aluminum oxide as a template. Different growth orientations of nanotwinned Cu nanowire arrays were investigated. The endurance of the electrical current density before breakdown of the nanotwinned Cu NWs can reach up to 2.4 × 108 A cm-2. The formation of highly dense nanotwins is attributed to relaxation of coalescence induced stress and twin fault stacking when Cu NWs grow by two-dimensional kinetics. A mechanism based on the twinning structure effect on the electromigration was proposed to explain the improved electrical endurance of Cu. The result demonstrates that the formation of nanotwins into Cu NWs can effectively suppress the void growth, leading to extended life time for use in electronic devices. Electronic supplementary information (ESI) available: X-ray diffraction spectra of Cu NWs grown by electrochemical deposition with a current density of 1.5 A cm-2 at -1 °C and room temperature; bright-field TEM images of Cu NWs deposited at -1 °C with a current density of 0.4, 0.8, 1.8, and 1.5 A cm-2, respectively; illustration of the effect of twin density on the MTTF of Cu NWs. See DOI: 10.1039/c3nr06194a

Internal Charging

NASA Technical Reports Server (NTRS)

Minow, Joseph I.

2014-01-01

(1) High energy (>100keV) electrons penetrate spacecraft walls and accumulate in dielectrics or isolated conductors; (2) Threat environment is energetic electrons with sufficient flux to charge circuit boards, cable insulation, and ungrounded metal faster than charge can dissipate; (3) Accumulating charge density generates electric fields in excess of material breakdown strenght resulting in electrostatic discharge; and (4) System impact is material damage, discharge currents inside of spacecraft Faraday cage on or near critical circuitry, and RF noise.

Electrical characterization of 4H-SiC metal-oxide-semiconductor structure with Al2O3 stacking layers as dielectric

NASA Astrophysics Data System (ADS)

Chang, P. K.; Hwu, J. G.

2018-02-01

Interface defects and oxide bulk traps conventionally play important roles in the electrical performance of SiC MOS device. Introducing the Al2O3 stack grown by repeated anodization of Al films can notably lower the leakage current in comparison to the SiO2 structure, and enhance the minority carrier response at low frequency when the number of Al2O3 layers increase. In addition, the interface quality is not deteriorated by the stacking of Al2O3 layers because the stacked Al2O3 structure grown by anodization possesses good uniformity. In this work, the capacitance equivalent thickness (CET) of stacking Al2O3 will be up to 19.5 nm and the oxidation process can be carried out at room temperature. For the Al2O3 gate stack with CET 19.5 nm on n-SiC substrate, the leakage current at 2 V is 2.76 × 10-10 A/cm2, the interface trap density at the flatband voltage is 3.01 × 1011 eV-1 cm-2, and the effective breakdown field is 11.8 MV/cm. Frequency dispersion and breakdown characteristics may thus be improved as a result of the reduction in trap density. The Al2O3 stacking layers are capable of maintaining the leakage current as low as possible even after constant voltage stress test, which will further ameliorate reliability characteristics.

Electric discharge during electrosurgery

PubMed Central

Shashurin, Alexey; Scott, David; Zhuang, Taisen; Canady, Jerome; Beilis, Isak I.; Keidar, Michael

2015-01-01

Electric discharge utilized for electrosurgery is studied by means of a recently developed method for the diagnostics of small-size atmospheric plasma objects based on Rayleigh scattering of microwaves on the plasma volume. Evolution of the plasma parameters in the near-electrode sheaths and in the positive column is measured and analyzed. It is found that the electrosurgical system produces a glow discharge of alternating current with strongly contracted positive column with current densities reaching 103 A/cm2. The plasma electron density and electrical conductivities in the channel were found be 1016 cm−3 and (1-2) Ohm−1cm−1, respectively. The discharge interrupts every instance when the discharge-driving AC voltage crosses zero and re-ignites again every next half-wave at the moment when the instant voltage exceeds the breakdown threshold. PMID:25880721

Electric discharge during electrosurgery.

PubMed

Shashurin, Alexey; Scott, David; Zhuang, Taisen; Canady, Jerome; Beilis, Isak I; Keidar, Michael

2015-04-16

Electric discharge utilized for electrosurgery is studied by means of a recently developed method for the diagnostics of small-size atmospheric plasma objects based on Rayleigh scattering of microwaves on the plasma volume. Evolution of the plasma parameters in the near-electrode sheaths and in the positive column is measured and analyzed. It is found that the electrosurgical system produces a glow discharge of alternating current with strongly contracted positive column with current densities reaching 10(3) A/cm(2). The plasma electron density and electrical conductivities in the channel were found be 10(16) cm(-3) and (1-2) Ohm(-1) cm(-1), respectively. The discharge interrupts every instance when the discharge-driving AC voltage crosses zero and re-ignites again every next half-wave at the moment when the instant voltage exceeds the breakdown threshold.

Simulation of Space Charge Dynamic in Polyethylene Under DC Continuous Electrical Stress

NASA Astrophysics Data System (ADS)

Boukhari, Hamed; Rogti, Fatiha

2016-10-01

The space charge dynamic plays a very important role in the aging and breakdown of polymeric insulation materials under high voltage. This is due to the intensification of the local electric field and the attendant chemical-mechanical effects in the vicinity around the trapped charge. In this paper, we have investigated the space charge dynamic in low-density polyethylene under high direct-current voltage, which is evaluated by experimental conditions. The evaluation is on the basis of simulation using a bipolar charge transport model consisting of charge injection, transports, trapping, detrapping, and recombination phenomena. The theoretical formulation of the physical problem is based on the Poisson, the continuity, and the transport equations. Numerical results provide temporal and local distributions of the electric field, the space charge density for the different kinds of charges (net charge density, mobile and trapped of electron density, mobile hole density), conduction and displacement current densities, and the external current. The result shows the appearance of the negative packet-like space charge with a large amount of the bulk under the dc electric field of 100 kV/mm, and the induced distortion of the electric field is largely near to the anode, about 39% higher than the initial electric field applied.

Electrical characteristics of thin Ta2O5 films deposited by reactive pulsed direct-current magnetron sputtering

NASA Astrophysics Data System (ADS)

Kim, J.-Y.; Nielsen, M. C.; Rymaszewski, E. J.; Lu, T.-M.

2000-02-01

Room temperature deposition of tantalum oxide films on metallized silicon substrates was investigated by reactive pulsed magnetron sputtering of Ta in an Ar/O2 ambient. The dielectric constant of the tantalum oxide ranged from 19 to 31 depending on the oxygen percentage [P(%)=PO2/(PO2+PAr)] used during sputtering. The leakage current density was less than 10 nA/cm2 at 0.5 MV/cm electric field and the dielectric breakdown field was greater than 3.8 MV/cm for P=60%. A charge storage as high as 3.3 μF/cm2 was achieved for 70-Å-thick film. Pulse frequency variation (from 20 to 200 kHz) did not give a significant effect in the electrical properties (dielectric constant or leakage current density) of the Ta2O5 films.

Aerosol-induced laser breakdown thresholds - Effect of resonant particles

NASA Technical Reports Server (NTRS)

Pinnick, R. G.; Biswas, A.; Pendleton, J. D.; Armstrong, R. L.

1992-01-01

Laser intensity thresholds for the onset of stimulated Raman scattering and the breakdown in resonant micron-sized droplets are reduced to below those for nonresonant droplets by a factor of about 3. This reduction is most likely caused by the enhancement of electromagnetic energy (photon) densities within the droplets over and above that in nonresonant droplets. The magnitude of the threshold reduction for breakdown is consistent with the assertion that: (1) input (pump) wavelength resonances that initiate plasma have cavity Qs of about 10 exp 4; and (2) finite regions of high-electromagnetic-energy density within the droplet, with dimensions of the order of the Debye length, are required to initiate plasma.

Significantly Enhanced Energy Storage Density by Modulating the Aspect Ratio of BaTiO3 Nanofibers

PubMed Central

Zhang, Dou; Zhou, Xuefan; Roscow, James; Zhou, Kechao; Wang, Lu; Luo, Hang; Bowen, Chris R.

2017-01-01

There is a growing need for high energy density capacitors in modern electric power supplies. The creation of nanocomposite systems based on one-dimensional nanofibers has shown great potential in achieving a high energy density since they can optimize the energy density by exploiting both the high permittivity of ceramic fillers and the high breakdown strength of the polymer matrix. In this paper, BaTiO3 nanofibers (NFs) with different aspect ratio were synthesized by a two-step hydrothermal method and the permittivity and energy storage of the P(VDF-HFP) nanocomposites were investigated. It is found that as the BaTiO3 NF aspect ratio and volume fraction increased the permittivity and maximum electric displacement of the nanocomposites increased, while the breakdown strength decreased. The nanocomposites with the highest aspect ratio BaTiO3 NFs exhibited the highest energy storage density at the same electric field. However, the nanocomposites with the lowest aspect ratio BaTiO3 NFs achieved the maximal energy storage density of 15.48 J/cm3 due to its higher breakdown strength. This contribution provides a potential route to prepare and tailor the properties of high energy density capacitor nanocomposites. PMID:28332636

Significantly Enhanced Energy Storage Density by Modulating the Aspect Ratio of BaTiO3 Nanofibers

NASA Astrophysics Data System (ADS)

Zhang, Dou; Zhou, Xuefan; Roscow, James; Zhou, Kechao; Wang, Lu; Luo, Hang; Bowen, Chris R.

2017-03-01

There is a growing need for high energy density capacitors in modern electric power supplies. The creation of nanocomposite systems based on one-dimensional nanofibers has shown great potential in achieving a high energy density since they can optimize the energy density by exploiting both the high permittivity of ceramic fillers and the high breakdown strength of the polymer matrix. In this paper, BaTiO3 nanofibers (NFs) with different aspect ratio were synthesized by a two-step hydrothermal method and the permittivity and energy storage of the P(VDF-HFP) nanocomposites were investigated. It is found that as the BaTiO3 NF aspect ratio and volume fraction increased the permittivity and maximum electric displacement of the nanocomposites increased, while the breakdown strength decreased. The nanocomposites with the highest aspect ratio BaTiO3 NFs exhibited the highest energy storage density at the same electric field. However, the nanocomposites with the lowest aspect ratio BaTiO3 NFs achieved the maximal energy storage density of 15.48 J/cm3 due to its higher breakdown strength. This contribution provides a potential route to prepare and tailor the properties of high energy density capacitor nanocomposites.

Significantly Enhanced Energy Storage Density by Modulating the Aspect Ratio of BaTiO3 Nanofibers.

PubMed

Zhang, Dou; Zhou, Xuefan; Roscow, James; Zhou, Kechao; Wang, Lu; Luo, Hang; Bowen, Chris R

2017-03-23

There is a growing need for high energy density capacitors in modern electric power supplies. The creation of nanocomposite systems based on one-dimensional nanofibers has shown great potential in achieving a high energy density since they can optimize the energy density by exploiting both the high permittivity of ceramic fillers and the high breakdown strength of the polymer matrix. In this paper, BaTiO 3 nanofibers (NFs) with different aspect ratio were synthesized by a two-step hydrothermal method and the permittivity and energy storage of the P(VDF-HFP) nanocomposites were investigated. It is found that as the BaTiO 3 NF aspect ratio and volume fraction increased the permittivity and maximum electric displacement of the nanocomposites increased, while the breakdown strength decreased. The nanocomposites with the highest aspect ratio BaTiO 3 NFs exhibited the highest energy storage density at the same electric field. However, the nanocomposites with the lowest aspect ratio BaTiO 3 NFs achieved the maximal energy storage density of 15.48 J/cm 3 due to its higher breakdown strength. This contribution provides a potential route to prepare and tailor the properties of high energy density capacitor nanocomposites.

Critical fermion density for restoring spontaneously broken symmetry

NASA Astrophysics Data System (ADS)

Kleinert, Hagen; Xue, She-Sheng

2015-07-01

We show how the phenomenon of spontaneous symmetry breakdown is affected by the presence of a sea of fermions in the system. When its density exceeds a critical value, the broken symmetry can be restored. We calculate the critical value and discuss the consequences for three different physical systems: First, for the Standard Model (SM) of particle physics, where the spontaneous symmetry breakdown leads to nonzero masses of intermediate gauge bosons and fermions. The symmetry restoration will greatly enhance various processes with dramatic consequences for the early universe. Second, for the Gell-Mann-Lévy σ-model of nuclear physics, where the symmetry breakdown gives rise to the nucleon and meson masses. The symmetry restoration may have important consequences for formation or collapse of stellar cores. Third, for the superconductive phase of condensed-matter, where the BCS condensate at low-temperature may be destroyed by a too large electron density.

Wavelength dependence of nanosecond infrared laser-induced breakdown in water: Evidence for multiphoton initiation via an intermediate state

NASA Astrophysics Data System (ADS)

Linz, Norbert; Freidank, Sebastian; Liang, Xiao-Xuan; Vogelmann, Hannes; Trickl, Thomas; Vogel, Alfred

2015-04-01

Investigation of the wavelength dependence (725-1025 nm) of the threshold for nanosecond optical breakdown in water revealed steps consistent with breakdown initiation by multiphoton ionization, with an initiation energy of about 6.6 eV. This value is considerably smaller than the autoionization threshold of about 9.5 eV, which can be regarded as band gap relevant for avalanche ionization. Breakdown initiation is likely to occur via excitation of a valence band electron into a solvated state, followed by rapid excitation into the conduction band. Theoretical analysis based on these assumptions suggests that the seed electron density required for initiating avalanche ionization amounts to 2.5 ×1015c m-3 at 725 nm and drops to 1.1 ×1012c m-3 at 1025 nm. These results demand changes of future breakdown modeling for water, including the use of a larger band gap than previously employed, the introduction of an intermediate energy level for initiation, and consideration of the wavelength dependence of seed electron density.

Polymer Composite and Nanocomposite Dielectric Materials for Pulse Power Energy Storage †

PubMed Central

Barber, Peter; Balasubramanian, Shiva; Anguchamy, Yogesh; Gong, Shushan; Wibowo, Arief; Gao, Hongsheng; Ploehn, Harry J.; zur Loye, Hans-Conrad

2009-01-01

This review summarizes the current state of polymer composites used as dielectric materials for energy storage. The particular focus is on materials: polymers serving as the matrix, inorganic fillers used to increase the effective dielectric constant, and various recent investigations of functionalization of metal oxide fillers to improve compatibility with polymers. We review the recent literature focused on the dielectric characterization of composites, specifically the measurement of dielectric permittivity and breakdown field strength. Special attention is given to the analysis of the energy density of polymer composite materials and how the functionalization of the inorganic filler affects the energy density of polymer composite dielectric materials.

Discussion of Electrode Conditioning Mechanism Based on Pre-breakdown Current under Non-uniform Electric Field in Vacuum

NASA Astrophysics Data System (ADS)

Yasuoka, Takanori; Kato, Tomohiro; Kato, Katsumi; Okubo, Hitoshi

Electrode conditioning is very important technique for improvement of the insulation performance of vacuum circuit breakers (VCBs). This paper discusses the spark conditioning mechanism under non-uniform electric field focused on the pre-breakdown current. We quantitatively evaluated the spark conditioning effect by analyzing the pre-breakdown current based on Fowler-Nordheim equation. As a result, field enhancement factor β decreased with the increasing in breakdown voltage in the beginning of conditioning process, and finally β was saturated with the saturation of breakdown voltage. In addition, in case of non-uniform field, we found that β on high voltage rod electrode after conditioning varied according to the electric field strength on the rod electrode.

City traffic flow breakdown prediction based on fuzzy rough set

NASA Astrophysics Data System (ADS)

Yang, Xu; Da-wei, Hu; Bing, Su; Duo-jia, Zhang

2017-05-01

In city traffic management, traffic breakdown is a very important issue, which is defined as a speed drop of a certain amount within a dense traffic situation. In order to predict city traffic flow breakdown accurately, in this paper, we propose a novel city traffic flow breakdown prediction algorithm based on fuzzy rough set. Firstly, we illustrate the city traffic flow breakdown problem, in which three definitions are given, that is, 1) Pre-breakdown flow rate, 2) Rate, density, and speed of the traffic flow breakdown, and 3) Duration of the traffic flow breakdown. Moreover, we define a hazard function to represent the probability of the breakdown ending at a given time point. Secondly, as there are many redundant and irrelevant attributes in city flow breakdown prediction, we propose an attribute reduction algorithm using the fuzzy rough set. Thirdly, we discuss how to predict the city traffic flow breakdown based on attribute reduction and SVM classifier. Finally, experiments are conducted by collecting data from I-405 Freeway, which is located at Irvine, California. Experimental results demonstrate that the proposed algorithm is able to achieve lower average error rate of city traffic flow breakdown prediction.

Current quantization and fractal hierarchy in a driven repulsive lattice gas.

PubMed

Rotondo, Pietro; Sellerio, Alessandro Luigi; Glorioso, Pietro; Caracciolo, Sergio; Cosentino Lagomarsino, Marco; Gherardi, Marco

2017-11-01

Driven lattice gases are widely regarded as the paradigm of collective phenomena out of equilibrium. While such models are usually studied with nearest-neighbor interactions, many empirical driven systems are dominated by slowly decaying interactions such as dipole-dipole and Van der Waals forces. Motivated by this gap, we study the nonequilibrium stationary state of a driven lattice gas with slow-decayed repulsive interactions at zero temperature. By numerical and analytical calculations of the particle current as a function of the density and of the driving field, we identify (i) an abrupt breakdown transition between insulating and conducting states, (ii) current quantization into discrete phases where a finite current flows with infinite differential resistivity, and (iii) a fractal hierarchy of excitations, related to the Farey sequences of number theory. We argue that the origin of these effects is the competition between scales, which also causes the counterintuitive phenomenon that crystalline states can melt by increasing the density.

Current quantization and fractal hierarchy in a driven repulsive lattice gas

NASA Astrophysics Data System (ADS)

Rotondo, Pietro; Sellerio, Alessandro Luigi; Glorioso, Pietro; Caracciolo, Sergio; Cosentino Lagomarsino, Marco; Gherardi, Marco

2017-11-01

Driven lattice gases are widely regarded as the paradigm of collective phenomena out of equilibrium. While such models are usually studied with nearest-neighbor interactions, many empirical driven systems are dominated by slowly decaying interactions such as dipole-dipole and Van der Waals forces. Motivated by this gap, we study the nonequilibrium stationary state of a driven lattice gas with slow-decayed repulsive interactions at zero temperature. By numerical and analytical calculations of the particle current as a function of the density and of the driving field, we identify (i) an abrupt breakdown transition between insulating and conducting states, (ii) current quantization into discrete phases where a finite current flows with infinite differential resistivity, and (iii) a fractal hierarchy of excitations, related to the Farey sequences of number theory. We argue that the origin of these effects is the competition between scales, which also causes the counterintuitive phenomenon that crystalline states can melt by increasing the density.

Al0 0.3Ga 0.7N PN diode with breakdown voltage >1600 V

DOE PAGES

Allerman, A. A.; Armstrong, A. M.; Fischer, A. J.; ...

2016-07-21

Demonstration of Al0 0.3Ga 0.7N PN diodes grown with breakdown voltages in excess of 1600 V is reported. The total epilayer thickness is 9.1 μm and was grown by metal-organic vapour-phase epitaxy on 1.3-mm-thick sapphire in order to achieve crack-free structures. A junction termination edge structure was employed to control the lateral electric fields. A current density of 3.5 kA/cm 2 was achieved under DC forward bias and a reverse leakage current <3 nA was measured for voltages <1200 V. The differential on-resistance of 16 mΩ cm 2 is limited by the lateral conductivity of the n-type contact layer requiredmore » by the front-surface contact geometry of the device. An effective critical electric field of 5.9 MV/cm was determined from the epilayer properties and the reverse current–voltage characteristics. To our knowledge, this is the first aluminium gallium nitride (AlGaN)-based PN diode exhibiting a breakdown voltage in excess of 1 kV. Finally, we note that a Baliga figure of merit (V br 2/R spec,on) of 150 MW/cm 2 found is the highest reported for an AlGaN PN diode and illustrates the potential of larger-bandgap AlGaN alloys for high-voltage devices.« less

Liquid Nitrogen as Fast High Voltage Switching Medium

NASA Astrophysics Data System (ADS)

Dickens, J.; Neuber, A.; Haustein, M.; Krile, J.; Krompholz, H.

2002-12-01

Compact pulsed power systems require new switching technologies. For high voltages, liquid nitrogen seems to be a suitable switching medium, with high hold-off voltage, low dielectric constant, and no need for pressurized systems as in high pressure gas switches. The discharge behavior in liquid nitrogen, such as breakdown voltages, formative times, current rise as function of voltage, recovery, etc. are virtually unknown, however. The phenomenology of breakdown in liquid nitrogen is investigated with high speed (temporal resolution < 1 ns) electrical and optical diagnostics, in a coaxial system with 50-Ohm impedance. Discharge current and voltage are determined with transmission line type current sensors and capacitive voltage dividers. The discharge luminosity is measured with photomultiplier tubes. Preliminary results of self-breakdown investigations (gap 1 mm, breakdown voltage 44 kV, non-boiling supercooled nitrogen) show a fast (2 ns) transition from an unknown current level to several mA, a long-duration (100 ns) phase with constant current superimposed by ns-spikes, and a final fast transition to the impedance limited current during several nanoseconds. The optical measurements will be expanded toward spectroscopy and high speed photography with the aim of clarifying the overall breakdown mechanisms, including electronic initiation, bubble formation, bubble dynamics, and their role in breakdown, for different electrode geometries (different macroscopic field enhancements).

Electrical system for measurement of breakdown voltage of vacuum and gas-filled tubes using a dynamic method

NASA Astrophysics Data System (ADS)

Pejović, Milić M.; Milosavljević, Čedomir S.; Pejović, Momčilo M.

2003-06-01

This article describes an electrical system aimed at measuring and data acquisition of breakdown voltages of vacuum and gas-filled tubes. The measurements were performed using a nitrogen-filled tube at 4 mbar pressure. Based on the measured breakdown voltage data as a function of the applied voltage increase rate, a static breakdown voltage is estimated for the applied voltage gradient ranging from 0.1 to 1 V s-1 and from 1 to 10 V s-1. The histograms of breakdown voltages versus applied voltage increase rates from 0.1 and 0.5 V s-1 are approximated by the probability density functions using a fitting procedure.

Current instability and burnout of HEMT structures

NASA Astrophysics Data System (ADS)

Vashchenko, V. A.; Sinkevitch, V. F.

1996-06-01

The burnout mechanism and region of high conductivity formation under breakdown of pseudomorphic GalnAs/GaAlAs and GaAs/GaAlAs HEMT structures have been studied in a pulsed and direct current (d.c.) regime. Peculiarities of the HEMT breakdown have been compared with a GaAs MESFET structure of the same topology. It appears that in all types of investigated structures the drain voltage increase is limited by the transition into a high conductivity state as a result of "parasitic" avalanche-injection conductivity modulation of the undoped GaAs or i-GaAs layer. It has been established that the transition into a high conductivity state is caused by holes from the drain avalanche region in the channel and is the result of a mutual intensification of the avalanche generation rate near the drain and the injection level from the source contact. It turns out that under a typical gate bias operation the transition in the high conductivity state is accompanied by a negative differential conductivity (NDC) and results in the formation of high current density filaments. The resulting high local overheating in the filament region is the cause of local melting and burnout of the HEMT structures.

Current-induced changes of migration energy barriers in graphene and carbon nanotubes.

PubMed

Obodo, J T; Rungger, I; Sanvito, S; Schwingenschlögl, U

2016-05-21

An electron current can move atoms in a nanoscale device with important consequences for the device operation and breakdown. We perform first principles calculations aimed at evaluating the possibility of changing the energy barriers for atom migration in carbon-based systems. In particular, we consider the migration of adatoms and defects in graphene and carbon nanotubes. Although the current-induced forces are large for both the systems, in graphene the force component along the migration path is small and therefore the barrier height is little affected by the current flow. In contrast, the same barrier is significantly reduced in carbon nanotubes as the current increases. Our work also provides a real-system numerical demonstration that current-induced forces within density functional theory are non-conservative.

Current conduction mechanism and electrical break-down in InN grown on GaN

NASA Astrophysics Data System (ADS)

Kuzmik, J.; Fleury, C.; Adikimenakis, A.; Gregušová, D.; Ťapajna, M.; Dobročka, E.; Haščík, Š.; Kučera, M.; Kúdela, R.; Androulidaki, M.; Pogany, D.; Georgakilas, A.

2017-06-01

Current conduction mechanism, including electron mobility, electron drift velocity (vd) and electrical break-down have been investigated in a 0.5 μm-thick (0001) InN layer grown by molecular-beam epitaxy on a GaN/sapphire template. Electron mobility (μ) of 1040 cm2/Vs and a free electron concentration (n) of 2.1 × 1018 cm-3 were measured at room temperature with only a limited change down to 20 K, suggesting scattering on dislocations and ionized impurities. Photoluminescence spectra and high-resolution X-ray diffraction correlated with the Hall experiment showing an emission peak at 0.69 eV, a full-width half-maximum of 30 meV, and a dislocation density Ndis ˜ 5.6 × 1010 cm-2. Current-voltage (I-V) characterization was done in a pulsed (10 ns-width) mode on InN resistors prepared by plasma processing and Ohmic contacts evaporation. Resistors with a different channel length ranging from 4 to 15.8 μm obeyed the Ohm law up to an electric field intensity Eknee ˜ 22 kV/cm, when vd ≥ 2.5 × 105 m/s. For higher E, I-V curves were nonlinear and evolved with time. Light emission with a photon energy > 0.7 eV has been observed already at modest Erad of ˜ 8.3 kV/cm and consequently, a trap-assisted interband tunneling was suggested to play a role. At Eknee ˜ 22 kV/cm, we assumed electron emission from traps, with a positive feed-back for the current enhancement. Catastrophic break-down appeared at E ˜ 25 kV/cm. Reduction of Ndis was suggested to fully exploit InN unique prospects for future high-frequency devices.

Suspended liquid particle disturbance on laser-induced blast wave and low density distribution

NASA Astrophysics Data System (ADS)

Ukai, Takahiro; Zare-Behtash, Hossein; Kontis, Konstantinos

2017-12-01

The impurity effect of suspended liquid particles on the laser-induced gas breakdown was experimentally investigated in quiescent gas. The focus of this study is the investigation of the influence of the impurities on the shock wave structure as well as the low density distribution. A 532 nm Nd:YAG laser beam with an 188 mJ/pulse was focused on the chamber filled with suspended liquid particles 0.9 ± 0.63 μm in diameter. Several shock waves are generated by multiple gas breakdowns along the beam path in the breakdown with particles. Four types of shock wave structures can be observed: (1) the dual blast waves with a similar shock radius, (2) the dual blast waves with a large shock radius at the lower breakdown, (3) the dual blast waves with a large shock radius at the upper breakdown, and (4) the triple blast waves. The independent blast waves interact with each other and enhance the shock strength behind the shock front in the lateral direction. The triple blast waves lead to the strongest shock wave in all cases. The shock wave front that propagates toward the opposite laser focal spot impinges on one another, and thereafter a transmitted shock wave (TSW) appears. The TSW interacts with the low density core called a kernel; the kernel then longitudinally expands quickly due to a Richtmyer-Meshkov-like instability. The laser-particle interaction causes an increase in the kernel volume which is approximately five times as large as that in the gas breakdown without particles. In addition, the laser-particle interaction can improve the laser energy efficiency.

Beam current enhancement of microwave plasma ion source utilizing double-port rectangular cavity resonator

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lee, Yuna; Park, Yeong-Shin; Jo, Jong-Gab

2012-02-15

Microwave plasma ion source with rectangular cavity resonator has been examined to improve ion beam current by changing wave launcher type from single-port to double-port. The cavity resonators with double-port and single-port wave launchers are designed to get resonance effect at TE-103 mode and TE-102 mode, respectively. In order to confirm that the cavities are acting as resonator, the microwave power for breakdown is measured and compared with the E-field strength estimated from the HFSS (High Frequency Structure Simulator) simulation. Langmuir probe measurements show that double-port cavity enhances central density of plasma ion source by modifying non-uniform plasma density profilemore » of the single-port cavity. Correspondingly, beam current from the plasma ion source utilizing the double-port resonator is measured to be higher than that utilizing single-port resonator. Moreover, the enhancement in plasma density and ion beam current utilizing the double-port resonator is more pronounced as higher microwave power applied to the plasma ion source. Therefore, the rectangular cavity resonator utilizing the double-port is expected to enhance the performance of plasma ion source in terms of ion beam extraction.« less

Beam current enhancement of microwave plasma ion source utilizing double-port rectangular cavity resonator.

PubMed

Lee, Yuna; Park, Yeong-Shin; Jo, Jong-Gab; Yang, J J; Hwang, Y S

2012-02-01

Microwave plasma ion source with rectangular cavity resonator has been examined to improve ion beam current by changing wave launcher type from single-port to double-port. The cavity resonators with double-port and single-port wave launchers are designed to get resonance effect at TE-103 mode and TE-102 mode, respectively. In order to confirm that the cavities are acting as resonator, the microwave power for breakdown is measured and compared with the E-field strength estimated from the HFSS (High Frequency Structure Simulator) simulation. Langmuir probe measurements show that double-port cavity enhances central density of plasma ion source by modifying non-uniform plasma density profile of the single-port cavity. Correspondingly, beam current from the plasma ion source utilizing the double-port resonator is measured to be higher than that utilizing single-port resonator. Moreover, the enhancement in plasma density and ion beam current utilizing the double-port resonator is more pronounced as higher microwave power applied to the plasma ion source. Therefore, the rectangular cavity resonator utilizing the double-port is expected to enhance the performance of plasma ion source in terms of ion beam extraction.

Correlation between morphological defects, electron beam-induced current imaging, and the electrical properties of 4H-SiC Schottky diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Y.; Ali, G.N.; Mikhov, M.K.

2005-01-01

Defects in SiC degrade the electrical properties and yield of devices made from this material. This article examines morphological defects in 4H-SiC and defects visible in electron beam-induced current (EBIC) images and their effects on the electrical characteristics of Schottky diodes. Optical Nomarski microscopy and atomic force microscopy were used to observe the morphological defects, which are classified into 26 types based on appearance alone. Forward and reverse current-voltage characteristics were used to extract barrier heights, ideality factors, and breakdown voltages. Barrier heights decrease about linearly with increasing ideality factor, which is explained by discrete patches of low barrier heightmore » within the main contact. Barrier height, ideality, and breakdown voltage all degrade with increasing device diameter, suggesting that discrete defects are responsible. Electroluminescence was observed under reverse bias from microplasmas associated with defects containing micropipes. EBIC measurements reveal several types of features corresponding to recombination centers. The density of dark spots observed by EBIC correlates strongly with ideality factor and barrier height. Most morphological defects do not affect the reverse characteristics when no micropipes are present, but lower the barrier height and worsen the ideality factor. However, certain multiple-tailed defects, irregularly shaped defects and triangular defects with 3C inclusions substantially degrade both breakdown voltage and barrier height, and account for most of the bad devices that do not contain micropipes. Micropipes in these wafers are also frequently found to be of Type II, which do not run parallel to the c axis.« less

Correlation Between Morphological Defects, Electron Beam Induced Current Imaging, and the Electrical Properties of 4H-SiC Schottky Diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang,Y.; Ali, G.; Mikhov, M.

2005-01-01

Defects in SiC degrade the electrical properties and yield of devices made from this material. This article examines morphological defects in 4H-SiC and defects visible in electron beam-induced current (EBIC) images and their effects on the electrical characteristics of Schottky diodes. Optical Nomarski microscopy and atomic force microscopy were used to observe the morphological defects, which are classified into 26 types based on appearance alone. Forward and reverse current-voltage characteristics were used to extract barrier heights, ideality factors, and breakdown voltages. Barrier heights decrease about linearly with increasing ideality factor, which is explained by discrete patches of low barrier heightmore » within the main contact. Barrier height, ideality, and breakdown voltage all degrade with increasing device diameter, suggesting that discrete defects are responsible. Electroluminescence was observed under reverse bias from microplasmas associated with defects containing micropipes. EBIC measurements reveal several types of features corresponding to recombination centers. The density of dark spots observed by EBIC correlates strongly with ideality factor and barrier height. Most morphological defects do not affect the reverse characteristics when no micropipes are present, but lower the barrier height and worsen the ideality factor. However, certain multiple-tailed defects, irregularly shaped defects and triangular defects with 3C inclusions substantially degrade both breakdown voltage and barrier height, and account for most of the bad devices that do not contain micropipes. Micropipes in these wafers are also frequently found to be of Type II, which do not run parallel to the c axis.« less

Early Breakdown of Area-Law Entanglement at the Many-Body Delocalization Transition

NASA Astrophysics Data System (ADS)

Devakul, Trithep; Singh, Rajiv R. P.

2015-10-01

We introduce the numerical linked cluster expansion as a controlled numerical tool for the study of the many-body localization transition in a disordered system with continuous nonperturbative disorder. Our approach works directly in the thermodynamic limit, in any spatial dimension, and does not rely on any finite size scaling procedure. We study the onset of many-body delocalization through the breakdown of area-law entanglement in a generic many-body eigenstate. By looking for initial signs of an instability of the localized phase, we obtain a value for the critical disorder, which we believe should be a lower bound for the true value, that is higher than current best estimates from finite size studies. This implies that most current methods tend to overestimate the extent of the localized phase due to finite size effects making the localized phase appear stable at small length scales. We also study the mobility edge in these systems as a function of energy density, and we find that our conclusion is the same at all examined energies.

Reduction of plasma density in the Helicity Injected Torus with Steady Inductance experiment by using a helicon pre-ionization source.

PubMed

Hossack, Aaron C; Firman, Taylor; Jarboe, Thomas R; Prager, James R; Victor, Brian S; Wrobel, Jonathan S; Ziemba, Timothy

2013-10-01

A helicon based pre-ionization source has been developed and installed on the Helicity Injected Torus with Steady Inductance (HIT-SI) spheromak. The source initiates plasma breakdown by injecting impurity-free, unmagnetized plasma into the HIT-SI confinement volume. Typical helium spheromaks have electron density reduced from (2-3) × 10(19) m(-3) to 1 × 10(19) m(-3). Deuterium spheromak formation is possible with density as low as 2 × 10(18) m(-3). The source also enables HIT-SI to be operated with only one helicity injector at injector frequencies above 14.5 kHz. A theory explaining the physical mechanism driving the reduction of breakdown density is presented.

Skin protection and breakdown in the ELBW infant. A national survey.

PubMed

Maguire, D P

1999-08-01

The purpose of this study was to learn how neonatal intensive care unit (NICU) nurses describe the problem of skin breakdown in the extremely low birth weight (ELBW) infant, examine interventions currently used to prevent and treat ELBW infant skin breakdown, and to learn how nurses describe and measure skin breakdown. Questionnaires were sent to 482 NICUs in the United States, and a response was requested from a registered nurse with at least 2 years NICU experience currently employed in the NICU who regularly managed ELBW infants. Questionnaires were returned from 215 NICUs (45%). Analysis revealed that an average of 21% of ELBW infants suffered skin breakdown during the 1st week of life. Nurses who reported the least problems with ELBW infant skin breakdown followed skin-care protocols that limited use of tape and made liberal use of Aquaphor to protect fragile skin. Recommendations from this study include the development of an objective tool to rate skin breakdown and further study of product efficacy used in the treatment of skin breakdown.

Ultrahigh density alignment of carbon nanotube arrays by dielectrophoresis.

PubMed

Shekhar, Shashank; Stokes, Paul; Khondaker, Saiful I

2011-03-22

We report ultrahigh density assembly of aligned single-walled carbon nanotube (SWNT) two-dimensional arrays via AC dielectrophoresis using high-quality surfactant-free and stable SWNT solutions. After optimization of frequency and trapping time, we can reproducibly control the linear density of the SWNT between prefabricated electrodes from 0.5 SWNT/μm to more than 30 SWNT/μm by tuning the concentration of the nanotubes in the solution. Our maximum density of 30 SWNT/μm is the highest for aligned arrays via any solution processing technique reported so far. Further increase of SWNT concentration results in a dense array with multiple layers. We discuss how the orientation and density of the nanotubes vary with concentrations and channel lengths. Electrical measurement data show that the densely packed aligned arrays have low sheet resistances. Selective removal of metallic SWNTs via controlled electrical breakdown produced field-effect transistors with high current on-off ratio. Ultrahigh density alignment reported here will have important implications in fabricating high-quality devices for digital and analog electronics.

Mobile charge, soft breakdown, and self-healing in hydrogen silsesquioxane based intermetal dielectric

NASA Astrophysics Data System (ADS)

Devine, R. A. B.

2002-09-01

The electrical characteristics of hydrogen silsesquioxane based flowable oxide (FOxregistered) films proposed for interconnect isolation applications have been studied. It is demonstrated that negative and positive charges exist in the as-made, cured films with densities of 0.95 x1012 and 1.5 x1012 cm-2, respectively for thicknesses of 114 nm. The negative charges can be removed from the films by application of modest electric fields (positive or negative, approx1.75 MV cm-1). The positive charge can be similarly displaced but not removed from the film; this results in time dependent relaxation and redistribution of the positive charge if the films are left unbiased. Time dependent irreversible evolution of the leakage current under positive and negative bias (approx3 MV cm-1) shows a slow breakdown phenomena. An unusual self-healing effect is evidenced in these films.

A Thermal Model for Carbon Nanotube Interconnects

PubMed Central

Mohsin, Kaji Muhammad; Srivastava, Ashok; Sharma, Ashwani K.; Mayberry, Clay

2013-01-01

In this work, we have studied Joule heating in carbon nanotube based very large scale integration (VLSI) interconnects and incorporated Joule heating influenced scattering in our previously developed current transport model. The theoretical model explains breakdown in carbon nanotube resistance which limits the current density. We have also studied scattering parameters of carbon nanotube (CNT) interconnects and compared with the earlier work. For 1 µm length single-wall carbon nanotube, 3 dB frequency in S12 parameter reduces to ~120 GHz from 1 THz considering Joule heating. It has been found that bias voltage has little effect on scattering parameters, while length has very strong effect on scattering parameters. PMID:28348333

The influence of the breakdown electric field in the configuration of lightning corona sheath on charge distribution in the channel

NASA Astrophysics Data System (ADS)

Ignjatovic, Milan; Cvetic, Jovan; Heidler, Fridolin; Markovic, Slavoljub; Djuric, Radivoje

2014-11-01

A model of corona sheath that surrounds the thin core of the lightning channel has been investigated by using a generalized traveling current source return stroke model. The lightning channel is modeled by a charged corona sheath that stretches around a highly conductive central core through which the main current flows. The channel core with the negatively charged outer channel sheath forms a strong electric field, with an overall radial orientation. The return stroke process is modeled as the negative leader charge in the corona sheath being discharged by the positive charge coming from the channel core. Expressions that describe how the corona sheath radius evolves during the return stroke are obtained from the corona sheath model, which predicts charge motion within the sheath. The corona sheath model, set forth by Maslowski and Rakov (2006), Tausanovic et al. (2010), Marjanovic and Cvetic (2009), Cvetic et al. (2011) and Cvetic et al. (2012), divides the sheath onto three zones: zone 1 (surrounding the channel core with net positive charge), zone 2 (surrounding zone 1 with negative charge) and zone 3 (the outer zone, representing uncharged virgin air). In the present study, we have assumed a constant electric field inside zone 1, as suggested by experimental research of corona discharges in coaxial geometry conducted by Cooray (2000). The present investigation builds upon previous studies by Tausanovic et al. (2010) and Cvetic et al. (2012) in several ways. The value of the breakdown electric field has been varied for probing its effect on channel charge distribution prior and during the return stroke. With the aim of investigating initial space charge distribution along the channel, total electric field at the outer surface of the channel corona sheath, just before the return stroke, is calculated and compared for various return stroke models. A self-consistent algorithm is applied to the generalized traveling current source return stroke model, so that the boundary condition for total electric field is fulfilled. The new density of space charge and the new radius of channel corona envelope, immediately before the return stroke stage, are calculated. The obtained results indicate a strong dependence of channel charge distribution on the breakdown electric field value. Among the compared return stroke models, transmission-line-type models have exhibited a good agreement with the predictions of the Gauss' law regarding total breakdown electric field on the corona sheath's outer surface. The generalized lightning traveling current source return stroke model gives similar results if the adjustment of the space charge density inside the corona sheath is performed.

EFFECTS OF LASER RADIATION ON MATTER. LASER PLASMA: Feasibility of investigation of optical breakdown statistics using multifrequency lasers

NASA Astrophysics Data System (ADS)

Ulanov, S. F.

1990-06-01

A method proposed for investigating the statistics of bulk optical breakdown relies on multifrequency lasers, which eliminates the influence of the laser radiation intensity statistics. The method is based on preliminary recording of the peak intensity statistics of multifrequency laser radiation pulses at the caustic using the optical breakdown threshold of K8 glass. The probability density distribution function was obtained at the focus for the peak intensities of the radiation pulses of a multifrequency laser. This method may be used to study the self-interaction under conditions of bulk optical breakdown of transparent dielectrics.

Energy storage in ferroelectric polymer nanocomposites filled with core-shell structured polymer@BaTiO3 nanoparticles: understanding the role of polymer shells in the interfacial regions.

PubMed

Zhu, Ming; Huang, Xingyi; Yang, Ke; Zhai, Xing; Zhang, Jun; He, Jinliang; Jiang, Pingkai

2014-11-26

The interfacial region plays a critical role in determining the electrical properties and energy storage density of dielectric polymer nanocomposites. However, we still know a little about the effects of electrical properties of the interfacial regions on the electrical properties and energy storage of dielectric polymer nanocomposites. In this work, three types of core-shell structured polymer@BaTiO3 nanoparticles with polymer shells having different electrical properties were used as fillers to prepare ferroelectric polymer nanocomposites. All the polymer@BaTiO3 nanoparticles were prepared by surface-initiated reversible-addition-fragmentation chain transfer (RAFT) polymerization, and the polymer shells were controlled to have the same thickness. The morphology, crystal structure, frequency-dependent dielectric properties, breakdown strength, leakage currents, energy storage capability, and energy storage efficiency of the polymer nanocomposites were investigated. On the other hand, the pure polymers having the same molecular structure as the shells of polymer@BaTiO3 nanoparticles were also prepared by RAFT polymerization, and their electrical properties were provided. Our results show that, to achieve nanocomposites with high discharged energy density, the core-shell nanoparticle filler should simultaneously have high dielectric constant and low electrical conductivity. On the other hand, the breakdown strength of the polymer@BaTiO3-based nanocomposites is highly affected by the electrical properties of the polymer shells. It is believed that the electrical conductivity of the polymer shells should be as low as possible to achieve nanocomposites with high breakdown strength.

Improvement in the breakdown endurance of high-κ dielectric by utilizing stacking technology and adding sufficient interfacial layer.

PubMed

Pang, Chin-Sheng; Hwu, Jenn-Gwo

2014-01-01

Improvement in the time-zero dielectric breakdown (TZDB) endurance of metal-oxide-semiconductor (MOS) capacitor with stacking structure of Al/HfO2/SiO2/Si is demonstrated in this work. The misalignment of the conduction paths between two stacking layers is believed to be effective to increase the breakdown field of the devices. Meanwhile, the resistance of the dielectric after breakdown for device with stacking structure would be less than that of without stacking structure due to a higher breakdown field and larger breakdown power. In addition, the role of interfacial layer (IL) in the control of the interface trap density (D it) and device reliability is also analyzed. Device with a thicker IL introduces a higher breakdown field and also a lower D it. High-resolution transmission electron microscopy (HRTEM) of the samples with different IL thicknesses is provided to confirm that IL is needed for good interfacial property.

Development of advanced polymer nanocomposite capacitors

NASA Astrophysics Data System (ADS)

Mendoza, Miguel

The current development of modern electronics has driven the need for new series of energy storage devices with higher energy density and faster charge/discharge rate. Batteries and capacitors are two of the most widely used energy storage devices. Compared with batteries, capacitors have higher power density and significant higher charge/discharge rate. Therefore, high energy density capacitors play a significant role in modern electronic devices, power applications, space flight technologies, hybrid electric vehicles, portable defibrillators, and pulse power applications. Dielectric film capacitors represent an exceptional alternative for developing high energy density capacitors due to their high dielectric constants, outstanding breakdown voltages, and flexibility. The implementation of high aspect ratio dielectric inclusions such as nanowires into polymer capacitors could lead to further enhancement of its energy density. Therefore, this research effort is focused on the development of a new series of dielectric capacitors composed of nanowire reinforced polymer matrix composites. This concept of nanocomposite capacitors combines the extraordinary physical and chemical properties of the one-dimension (1D) nanoceramics and high dielectric strength of polymer matrices, leading to a capacitor with improved dielectric properties and energy density. Lead-free sodium niobate (NaNbO3) and lead-containing lead magnesium niobate-lead titanate (0.65PMN-0.35PT) nanowires were synthesized following hydrothermal and sol-gel approaches, respectively. The as-prepared nanowires were mixed with a polyvinylidene fluoride (PVDF) matrix using solution-casting method for nanocomposites fabrication. The dielectric constants and breakdown voltages of the NaNbO3/PVDF and 0.65PMN-0.35PT/PVDF nanocomposites were measured under different frequency ranges and temperatures in order to determine their maximum energy (J/cm3) and specific (J/g) densities. The electrical properties of the synthesized nanoceramics were compared with commercially available barium titanate (BaTiO3) and lead zirconate titanate Pb(ZrxTi1-x)O3 powders embedded into a PVDF matrix. The resulting dielectric film capacitors represent an excellent alternative energy storage device for future high energy density applications.

Effects of substrate temperature on properties of pulsed dc reactively sputtered tantalum oxide films

NASA Astrophysics Data System (ADS)

Jain, Pushkar; Juneja, Jasbir S.; Bhagwat, Vinay; Rymaszewski, Eugene J.; Lu, Toh-Ming; Cale, Timothy S.

2005-05-01

The effects of substrate heating on the stoichiometry and the electrical properties of pulsed dc reactively sputtered tantalum oxide films over a range of film thickness (0.14 to 5.4 μm) are discussed. The film stoichiometry, and hence the electrical properties, of tantalum oxide films; e.g., breakdown field, leakage current density, dielectric constant, and dielectric loss are compared for two different cases: (a) when no intentional substrate/film cooling is provided, and (b) when the substrate is water cooled during deposition. All other operating conditions are the same, and the film thickness is directly related to deposition time. The tantalum oxide films deposited on the water-cooled substrates are stoichiometric, and exhibit excellent electrical properties over the entire range of film thickness. ``Noncooled'' tantalum oxide films are stoichiometric up to ~1 μm film thickness, beyond that the deposited oxide is increasingly nonstoichiometric. The presence of partially oxidized Ta in thicker (>~1 μm) noncooled tantalum oxide films causes a lower breakdown field, higher leakage current density, higher apparent dielectric constant, and dielectric loss. The growth of nonstoichiometric tantalum oxide in thicker noncooled films is attributed to decreased surface oxygen concentration due to oxygen recombination and desorption at higher film temperatures (>~100 °C). The quantitative results presented reflect experience with a specific piece of equipment; however, the procedures presented can be used to characterize deposition processes in which film stoichiometry can change.

GaAsP/InGaP HBTs grown epitaxially on Si substrates: Effect of dislocation density on DC current gain

NASA Astrophysics Data System (ADS)

Heidelberger, Christopher; Fitzgerald, Eugene A.

2018-04-01

Heterojunction bipolar transistors (HBTs) with GaAs0.825P0.175 bases and collectors and In0.40Ga0.60P emitters were integrated monolithically onto Si substrates. The HBT structures were grown epitaxially on Si via metalorganic chemical vapor deposition, using SiGe compositionally graded buffers to accommodate the lattice mismatch while maintaining threading dislocation density at an acceptable level (˜3 × 106 cm-2). GaAs0.825P0.175 is used as an active material instead of GaAs because of its higher bandgap (increased breakdown voltage) and closer lattice constant to Si. Misfit dislocation density in the active device layers, measured by electron-beam-induced current, was reduced by making iterative changes to the epitaxial structure. This optimized process culminated in a GaAs0.825P0.175/In0.40Ga0.60P HBT grown on Si with a DC current gain of 156. By considering the various GaAsP/InGaP HBTs grown on Si substrates alongside several control devices grown on GaAs substrates, a wide range of threading dislocation densities and misfit dislocation densities in the active layers could be correlated with HBT current gain. The effect of threading dislocations on current gain was moderated by the reduction in minority carrier lifetime in the base region, in agreement with existing models for GaAs light-emitting diodes and photovoltaic cells. Current gain was shown to be extremely sensitive to misfit dislocations in the active layers of the HBT—much more sensitive than to threading dislocations. We develop a model for this relationship where increased base current is mediated by Fermi level pinning near misfit dislocations.

The Studies of a Vacuum Gap Breakdown after High-Current Arc Interruption with Increasing the Voltage

NASA Astrophysics Data System (ADS)

Schneider, A. V.; Popov, S. A.; Batrakov, A. V.; Dubrovskaya, E. L.; Lavrinovich, V. A.

2017-12-01

Vacuum-gap breakdown has been studied after high-current arc interruption with a subsequent increase in the transient recovery voltage across a gap. The effects of factors, such as the rate of the rise in the transient voltage, the potential of the shield that surrounds a discharge gap, and the arc burning time, have been determined. It has been revealed that opening the contacts earlier leads to the formation of an anode spot, which is the source of electrode material vapors into the discharge gap after current zero moment. Under the conditions of increasing voltage, this fact results in the breakdown. Too late opening leads to the breakdown of a short gap due to the high electric fields.

Role of lenticel morphology, frequency and density on incidence of lenticel breakdown in 'GALA' apples

USDA-ARS?s Scientific Manuscript database

A two-year study was conducted in the arid fruit growing regions of South Africa and eastern Washington State to examine the etiology of lenticel breakdown (LB). The evaluation of lenticel size, including peel imprints and tissue cross-sections, presented no clear relationship between lenticels siz...

Breakdown simulations in a focused microwave beam within the simplified model

DOE Office of Scientific and Technical Information (OSTI.GOV)

Semenov, V. E.; Rakova, E. I.; Glyavin, M. Yu.

2016-07-15

The simplified model is proposed to simulate numerically air breakdown in a focused microwave beam. The model is 1D from the mathematical point of view, but it takes into account the spatial non-uniformity of microwave field amplitude along the beam axis. The simulations are completed for different frequencies and different focal lengths of microwave beams. The results demonstrate complicated regimes of the breakdown evolution which represents a series of repeated ionization waves. These waves start at the focal point and propagate towards incident microwave radiation. The ionization wave parameters vary during propagation. At relatively low frequencies, the propagation regime ofmore » subsequent waves can also change qualitatively. Each next ionization wave is less pronounced than the previous one, and the breakdown evolution approaches the steady state with relatively small plasma density. The ionization wave parameters are sensitive to the weak source of external ionization, but the steady state is independent on such a source. As the beam focal length decreases, the stationary plasma density increases and the onset of the steady state occurs faster.« less

Physics of the current injection process during localized helicity injection

NASA Astrophysics Data System (ADS)

Hinson, Edward Thomas

An impedance model has been developed for the arc-plasma cathode electron current source used in localized helicity injection tokamak startup. According to this model, a potential double layer (DL) is established between the high-density arc plasma (narc ˜ 1021 m-3) in the electron source, and the less-dense external tokamak edge plasma (nedge ˜ 10 18 m-3) into which current is injected. The DL launches an electron beam at the applied voltage with cross-sectional area close to that of the source aperture: Ainj ≈ 2 cm 2. The injected current, Iinj, increases with applied voltage, Vinj, according to the standard DL scaling, Iinj ˜ V(3/2/ inj), until the more restrictive of two limits to beam density nb arises, producing Iinj ˜ V(1/2/inj), a scaling with beam drift velocity. For low external tokamak edge density nedge, space-charge neutralization of the intense electron beam restricts the injected beam density to nb ˜ nedge. At high Jinj and sufficient edge density, the injected current is limited by expansion of the DL sheath, which leads to nb ˜ narc. Measurements of narc, Iinj , nedge, Vinj, support these predicted scalings, and suggest narc as a viable control actuator for the source impedance. Magnetic probe signals ≈ 300 degrees toroidally from the injection location are consistent with expectations for a gyrating, coherent electron beam with a compact areal cross-section. Technological development of the source has allowed an extension of the favorable Iinj ˜ V(1/2/inj) to higher power without electrical breakdown.

Junction barrier Schottky rectifier with an improved P-well region

NASA Astrophysics Data System (ADS)

Wang, Ying; Li, Ting; Cao, Fei; Shao, Lei; Chen, Yu-Xian

2012-12-01

A junction barrier Schottky (JBS) rectifier with an improved P-well on 4H—SiC is proposed to improve the VF—IR trade-off and the breakdown voltage. The reverse current density of the proposed JBS rectifier at 300 K and 800 V is about 3.3×10-8 times that of the common JBS rectifier at no expense of the forward voltage drop. This is because the depletion layer thickness in the P-well region at the same reverse voltage is larger than in the P+ grid, resulting in a lower spreading current and tunneling current. As a result, the breakdown voltage of the proposed JBS rectifier is over 1.6 kV, that is about 0.8 times more than that of the common JBS rectifier due to the uniform electric field. Although the series resistance of the proposed JBS rectifier is a little larger than that of the common JBS rectifier, the figure of merit (FOM) of the proposed JBS rectifier is about 2.9 times that of the common JBS rectifier. Based on simulating the values of susceptibility of the two JBS rectifiers to electrostatic discharge (ESD) in the human body model (HBM) circuits, the failure energy of the proposed JBS rectifier increases 17% compared with that of the common JBS rectifier.

Preparation and Dielectric Properties of SiC/LSR Nanocomposites for Insulation of High Voltage Direct Current Cable Accessories

PubMed Central

Shang, Nanqiang; Chen, Qingguo; Wei, Xinzhe

2018-01-01

The conductivity mismatch in the composite insulation of high voltage direct current (HVDC) cable accessories causes electric field distribution distortion and even insulation breakdown. Therefore, a liquid silicone rubber (LSR) filled with SiC nanoparticles is prepared for the insulation of cable accessories. The micro-morphology of the SiC/LSR nanocomposites is observed by scanning electron microscopy, and their trap parameters are characterized using thermal stimulated current (TSC) tests. Moreover, the dielectric properties of SiC/LSR nanocomposites with different SiC concentrations are tested. The results show that the 3 wt % SiC/LSR sample has the best nonlinear conductivity, more than one order of magnitude higher than that of pure LSR with improved temperature and nonlinear conductivity coefficients. The relative permittivity increased 0.2 and dielectric loss factor increased 0.003, while its breakdown strength decreased 5 kV/mm compared to those of pure LSR. Moreover, the TSC results indicate the introduction of SiC nanoparticles reduced the trap level and trap density. Furthermore, the SiC nanoparticles filling significantly increased the sensitivity of LSR to electric field stress and temperature changes, enhancing the conductivity and electric field distribution within the HVDC cable accessories, thus improving the reliability of the HVDC cable accessories. PMID:29518054

Preparation and Dielectric Properties of SiC/LSR Nanocomposites for Insulation of High Voltage Direct Current Cable Accessories.

PubMed

Shang, Nanqiang; Chen, Qingguo; Wei, Xinzhe

2018-03-08

The conductivity mismatch in the composite insulation of high voltage direct current (HVDC) cable accessories causes electric field distribution distortion and even insulation breakdown. Therefore, a liquid silicone rubber (LSR) filled with SiC nanoparticles is prepared for the insulation of cable accessories. The micro-morphology of the SiC/LSR nanocomposites is observed by scanning electron microscopy, and their trap parameters are characterized using thermal stimulated current (TSC) tests. Moreover, the dielectric properties of SiC/LSR nanocomposites with different SiC concentrations are tested. The results show that the 3 wt % SiC/LSR sample has the best nonlinear conductivity, more than one order of magnitude higher than that of pure LSR with improved temperature and nonlinear conductivity coefficients. The relative permittivity increased 0.2 and dielectric loss factor increased 0.003, while its breakdown strength decreased 5 kV/mm compared to those of pure LSR. Moreover, the TSC results indicate the introduction of SiC nanoparticles reduced the trap level and trap density. Furthermore, the SiC nanoparticles filling significantly increased the sensitivity of LSR to electric field stress and temperature changes, enhancing the conductivity and electric field distribution within the HVDC cable accessories, thus improving the reliability of the HVDC cable accessories.

Effect of titanium nitride/titanium coatings on the stress corrosion of nickel-titanium orthodontic archwires in artificial saliva

NASA Astrophysics Data System (ADS)

Liu, Jia-Kuang; Liu, I.-Hua; Liu, Cheng; Chang, Chen-Jung; Kung, Kuan-Chen; Liu, Yen-Ting; Lee, Tzer-Min; Jou, Jin-Long

2014-10-01

The purpose of this investigation was to develop titanium nitride (TiN)/titanium (Ti) coating on orthodontic nickel-titanium (NiTi) wires and to study the stress corrosion of specimens in vitro, simulating the intra-oral environment in as realistic a manner as possible. TiN/Ti coatings were formed on orthodontic NiTi wires by physical vapor deposition (PVD). The characteristics of untreated and TiN/Ti-coated NiTi wires were evaluated by measurement of corrosion potential (Ecorr), corrosion current densities (Icorr), breakdown potential (Eb), and surface morphology in artificial saliva with different pH and three-point bending conditions. From the potentiodynamic polarization and SEM results, the untreated NiTi wires showed localized corrosion compared with the uniform corrosion observed in the TiN/Ti-coated specimen under both unstressed and stressed conditions. The bending stress influenced the corrosion current density and breakdown potential of untreated specimens at both pH 2 and pH 5.3. Although the bending stress influenced the corrosion current of the TiN/Ti-coated specimens, stable and passive corrosion behavior of the stressed specimen was observed even at 2.0 V (Ag/AgCl). It should be noted that the surface properties of the NiTi alloy could determine clinical performance. For orthodontic application, the mechanical damage destroys the protective oxide film of NiTi; however, the self-repairing capacity of the passive film of NiTi alloys is inferior to Ti in chloride-containing solutions. In this study, the TiN coating was found able to provide protection against mechanical damage, while the Ti interlayer improved the corrosion properties in an aggressive environment.

Quantum Hall effect breakdown in two-dimensional hole gases

NASA Astrophysics Data System (ADS)

Eaves, L.; Stoddart, S. T.; Wirtz, R.; Neumann, A. C.; Gallagher, B. L.; Main, P. C.; Henini, M.

2000-02-01

The breakdown of dissipationless current flow in the quantum Hall effect is studied for a two-dimensional hole gas at filling factors i=1 and 2. At high currents, the magnetoresistance curves at breakdown exhibit a series of steps accompanied by hysteresis and intermittent noise. These are compared with similar data for electron systems and are discussed in terms of a hydrodynamic model involving inter-Landau level scattering at the sample edge.

Reduction of plasma density in the Helicity Injected Torus with Steady Inductance experiment by using a helicon pre-ionization source

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hossack, Aaron C.; Jarboe, Thomas R.; Victor, Brian S.

2013-10-15

A helicon based pre-ionization source has been developed and installed on the Helicity Injected Torus with Steady Inductance (HIT-SI) spheromak. The source initiates plasma breakdown by injecting impurity-free, unmagnetized plasma into the HIT-SI confinement volume. Typical helium spheromaks have electron density reduced from (2–3) × 10{sup 19} m{sup −3} to 1 × 10{sup 19} m{sup −3}. Deuterium spheromak formation is possible with density as low as 2 × 10{sup 18} m{sup −3}. The source also enables HIT-SI to be operated with only one helicity injector at injector frequencies above 14.5 kHz. A theory explaining the physical mechanism driving the reductionmore » of breakdown density is presented.« less

Proceedings of the Particle Beam Research Workshop, Held at US Air Force Academy, Colorado, Springs, CO on 10-11 January 1980

DTIC Science & Technology

1980-05-01

Components 25 2.7.1 Transformers 25 2.7.2 Solid Dielectric 26 2.7.3 Cables and Connectors 27 III. SOURCES 29 3.1 Preface 29 3.2 Electron Sources 30 3.3 High...be developed which can withstand high voltages , high current densities, and pass large energies per pulse with high repetition rates, high reliability...Ceramics - high voltage hold-off 2) Dielectrics - hold-off recovery after breakdown 3) Metals - low erosion rates, higher j and esaturation 4) Degradation

AlN/GaN heterostructures for normally-off transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhuravlev, K. S., E-mail: zhur@isp.nsc.ru; Malin, T. V.; Mansurov, V. G.

The structure of AlN/GaN heterostructures with an ultrathin AlN barrier is calculated for normally-off transistors. The molecular-beam epitaxy technology of in situ passivated SiN/AlN/GaN heterostructures with a two-dimensional electron gas is developed. Normally-off transistors with a maximum current density of ~1 A/mm, a saturation voltage of 1 V, a transconductance of 350 mS/mm, and a breakdown voltage of more than 60 V are demonstrated. Gate lag and drain lag effects are almost lacking in these transistors.

Application of high-quality SiO2 grown by multipolar ECR source to Si/SiGe MISFET

NASA Technical Reports Server (NTRS)

Sung, K. T.; Li, W. Q.; Li, S. H.; Pang, S. W.; Bhattacharya, P. K.

1993-01-01

A 5 nm-thick SiO2 gate was grown on an Si(p+)/Si(0.8)Ge(0.2) modulation-doped heterostructure at 26 C with an oxygen plasma generated by a multipolar electron cyclotron resonance source. The ultrathin oxide has breakdown field above 12 MV/cm and fixed charge density about 3 x 10 exp 10/sq cm. Leakage current as low as 1/micro-A was obtained with the gate biased at 4 V. The MISFET with 0.25 x 25 sq m gate shows maximum drain current of 41.6 mA/mm and peak transconductance of 21 mS/mm.

PVDF-based copolymers, terpolymers and their multi-component material systems for capacitor applications

NASA Astrophysics Data System (ADS)

Chu, Baojin

Miniature of power electronics, scaling-down of microelectronics and other electrical and electronic systems, and development of many technologies (such as hybrid vehicles or implantable heart defibrillators) require capacitors with high energy density to improve the weight and volume efficiency of the whole system. Various capacitor technologies are investigated to meet the requirements of developing future technologies. Among these technologies, polymer film capacitor technology is one of the most promising. Besides high energy density, polymer-based capacitors possess the merits of high power density, low loss, high reliability (self-healing), easy processing, and feasibility (in size, shape and energy level). Due to the ferroelectricity of polyvinylidene fluoride (PVDF)-based polymers, they exhibit much higher polarization response under an electric field, in comparison with other linear dielectric polymers for capacitor applications. The maximum polarization level of PVDF-based polymers can be as high as 0.1 C/m2 and the breakdown field can be higher than 600 MV/m. An estimated energy density of around 30 J/cm3 can be expected in this class of materials. However, this value is much higher than the energy density that can be achieved in the PVDF homopolymer and the poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) copolymers due to the polarization hysteresis in these polymers. Therefore, in this thesis, PVDF-based polymer materials were investigated and developed to approach this expected energy density by various strategies. An energy density of higher than 24 J/cm 3, which is close to the predicted value, was found in PVDF-based copolymers. Recently, the poly(vinylidene fluoride-trifluoroethylene-chlorofluoroethylene) (P(VDF-TrFE-CFE)) terpolymer was developed in Prof. Qiming Zhang's group. Previous works have shown that incorporation of CTE into P(VDF-TrFE) copolymers, in which bulky CFE acts as a defect, could convert the copolymer into relaxor ferroelectrics. P(VDF-TrFE-CFE) terpolymers possess a high dielectric constant (larger than 50 at 1 kHz) at room temperature and excellent electromechanical properties. Here, the P(VDF-TrFE-CFE) terpolymers were studied as dielectric materials for capacitor applications. The electrical, thermal and microstructure characterizations were performed on the terpolymers. The terpolymers exhibit a high breakdown field (higher than 400 MV/m) and energy density (larger than 9 J/cm 3). The energy discharge characteristics of the terpolymer were studied by directly discharging the stored energy in the terpolymers to a load resistor. Due to the highly field-dependent nonlinear and frequency dependent dielectric response of the terpolymers, the discharge energy density and equivalent series resistance strongly depend on the load resistor and discharge speed. This study found that for high energy density dielectric materials, a very high dielectric constant might not be an advantage. In the case of terpolymers, this leads to early polarization saturation, i.e., polarization response saturates under an electric field much lower than the breakdown field and causes lower than expected energy density. Due to the dielectric nonlinearity and early saturation of polarization, the energy density of the terpolymers increases linearly with the applied electric fields. It was also found that the polymer-metal interface played an important role for conduction and the breakdown field in the terpolymers, which was related to the charge injection from the metal to the polymer. Due to highly nonlinear dielectric behavior and early polarization saturation in the terpolymers, it was proposed that a high dielectric constant might not be desirable to obtain high energy density. Poly(vinylidene fluoride-chlorotrifluoroethylene) (P(VDFCTFE), 10, 15 and 20 wt% CTFE) and Poly(vinylidene fluoride-hexafluoropropylene) (P(VDF-HFP), 10 and 12 wt% HFP) copolymers, which possess a much lower dielectric constant (about 12 at 1 kHz at room temperature), were further investigated for dielectric materials of high energy density. Due to the lower dielectric constant, the early polarization saturation was avoided and these polymers showed a very high breakdown field and energy density. For the P(VDF-CTFE) copolymer with 15 wt% CTFE, an energy density of higher than 24 J/cm 3 at an electric field higher than 650 MV/m could be obtained. Based on thermal and microstructure studies, the high energy density was found to be caused by the structural modification of PVDF by bulky CTFE or HFP, which also act as defects, similar to the terpolymers. The discharge behavior of the copolymers mainly relies on the load resistors, suggesting that the copolymers have lower equivalent series resistance. Multi-component material system based on current available materials was found to be a useful strategy to tailor and improve the performance of dielectric materials. Nanocomposites composed of the P(VDF-TrFE-CFE) terpolymers and ZrO2 or TiO2 nanoparticles were found to greatly enhance the polarization response and energy density of terpolymers (from 9 J/cm3 to 10.5 J/cm3). Based on comprehensive thermal, dielectric and microstructure studies, the enhancement was believed to be related to the large amount of interfaces in the nanocomposites. In the interfaces, the chain mobility is increased and the energy barrier between the polar and nonpolar phases is reduced, resulting in higher polarization response and energy density at a reduced electric field. The P(VDF-TrFE-CFE) terpolymer/P(VDF-CTFE) copolymer and the P(VDFTrFE-CFE) terpolymer/PMMA blends were also studied. It was found that the P(VDFTrFE-CFE) terpolymers could not be completely miscible with the P(VDF-CTFE) copolymer. In the P(VDF-TrFE-CFE) terpolymer/P(VDF-CTFE) copolymer blends, with a small amount of the copolymer (5 and 10 wt%) in the terpolymer, enhancement of the polarization response similar to that observed in the terpolymer/ZrO 2 nanocomposites was observed. This enhancement was also thought to be mainly caused by the interface effect. The breakdown field of blends was also greatly improved, which resulted in a significant improvement in energy density (from 9 J/cm3 to 11.5 J/cm3). The P(VDF-TrFE-CFE) terpolymers are miscible with PMMA. Addition of PMMA was found to reduce the dielectric response of blends, but also to improve the breakdown field due to the improvement of mechanical properties. The optimum composition of the blends is around 2.5 wt% PMMA. With this composition, the breakdown field of the blends can be improved without reduction of energy density.

Damage effect and mechanism of the GaAs pseudomorphic high electron mobility transistor induced by the electromagnetic pulse

NASA Astrophysics Data System (ADS)

Xiao-Wen, Xi; Chang-Chun, Chai; Gang, Zhao; Yin-Tang, Yang; Xin-Hai, Yu; Yang, Liu

2016-04-01

The damage effect and mechanism of the electromagnetic pulse (EMP) on the GaAs pseudomorphic high electron mobility transistor (PHEMT) are investigated in this paper. By using the device simulation software, the distributions and variations of the electric field, the current density and the temperature are analyzed. The simulation results show that there are three physical effects, i.e., the forward-biased effect of the gate Schottky junction, the avalanche breakdown, and the thermal breakdown of the barrier layer, which influence the device current in the damage process. It is found that the damage position of the device changes with the amplitude of the step voltage pulse. The damage appears under the gate near the drain when the amplitude of the pulse is low, and it also occurs under the gate near the source when the amplitude is sufficiently high, which is consistent with the experimental results. Project supported by the National Basic Research Program of China (Grant No. 2014CB339900), and the Open Fund of Key Laboratory of Complex Electromagnetic Environment Science and Technology, China Academy of Engineering Physics (CAEP) (Grant No. 2015-0214.XY.K).

Design and analysis of 30 nm T-gate InAlN/GaN HEMT with AlGaN back-barrier for high power microwave applications

NASA Astrophysics Data System (ADS)

Murugapandiyan, P.; Ravimaran, S.; William, J.; Meenakshi Sundaram, K.

2017-11-01

In this article, we present the DC and microwave characteristics of a novel 30 nm T-gate InAlN/AlN/GaN HEMT with AlGaN back-barrier. The device structure is simulated by using Synopsys Sentaurus TCAD Drift-Diffusion transport model at room temperature. The device features are heavily doped (n++ GaN) source/drain regions with Si3N4 passivated device surface for reducing the contact resistances and gate capacitances of the device, which uplift the microwave characteristics of the HEMTs. 30 nm gate length D-mode (E-mode) HEMT exhibited a peak drain current density Idmax of 2.3 (2.42) A/mm, transconductance gm of 1.24(1.65) S/mm, current gain cut-off frequency ft of 262 (246) GHz, power gain cut-off frequency fmax of 246(290) GHz and the three terminal off-state breakdown voltage VBR of 40(38) V. The preeminent microwave characteristics with the higher breakdown voltage of the proposed GaN-based HEMT are the expected to be the most optimistic applicant for future high power millimeter wave applications.

Significantly improved dielectric performances of nanocomposites via loading two-dimensional core-shell structure Bi2Te3@SiO2 nanosheets

NASA Astrophysics Data System (ADS)

Chen, Jianwen; Wang, Xiucai; Yu, Xinmei; Fan, Yun; Duan, Zhikui; Jiang, Yewen; Yang, Faquan; Zhou, Yuexia

2018-07-01

Polymer/semiconductor-insulator nanocomposites can display high dielectric constants with a relatively low dissipation factor under low electric fields, and thus seem to promising for high energy density capacitors. Here, a novel nanocomposite films is developed by loading two-dimensional (2D) core-shell structure Bi2Te3@SiO2 nanosheets in the poly (vinylidene fluoride-hexafluoro propylene) (P(VDF-HFP)) polymer matrix. The 2D Bi2Te3 nanosheets were prepared through simple microwave-assisted method. The experimental results suggesting that the SiO2 shell layer between the fillers and polymer matrix could effectively improve the dielectric constant, dielectric loss, AC conductivity, and breakdown strength of composites films. The composite films load with 10 vol.% 2D Bi2Te3@SiO2 nanosheets exhibits a high dielectric constant of 70.3 at 1 kHz and relatively low dielectric loss of 0.058 at 1 kHz. The finite element simulation of electric field and electric current density distribution revealed that the SiO2 shell layer between the fillers and polymer matrix could effectively improve the energy loss, local electric field strength, and breakdown strength of composite films. Therefore, this work will provide a promising route to achieve high-performance capacitors.

Periodontal status affects C-reactive protein and lipids in patients with stable heart disease from a tertiary care cardiovascular clinic.

PubMed

Flores, Manuela F; Montenegro, Marlon M; Furtado, Mariana V; Polanczyk, Carisi A; Rösing, Cassiano K; Haas, Alex N

2014-04-01

There are scarce data on the impact of the periodontal condition in the control of biomarkers in patients with cardiovascular disease (CVD). The aim of this study is to assess whether periodontal inflammation and tissue breakdown are associated with C-reactive protein (CRP) and lipids in patients with stable heart disease. This cross-sectional study included 93 patients with stable coronary artery disease (57 males; mean age: 63.5 ± 9.8 years) who were in outpatient care for at least 6 months. After applying a structured questionnaire, periodontal examinations were performed by two calibrated periodontists in six sites per tooth at all teeth. Blood samples were collected from patients on the day of periodontal examination to determine levels of CRP, lipids, and glycated hemoglobin. Multiple linear regression models were fitted to evaluate the association among different periodontal and blood parameters controlling for sex, body mass index, glycated hemoglobin, use of oral hypoglycemic drugs, and smoking. Overall, the sample presented high levels of periodontal inflammation and tissue breakdown. Unadjusted mean concentrations of triglycerides (TGs), very-low-density lipoprotein cholesterol, and glucose were significantly higher in individuals with severe periodontitis. When multiple linear regression models were applied, number of teeth with clinical attachment loss ≥6 mm and presence of severe periodontitis were significantly associated with higher CRP concentrations. Bleeding on probing was significantly associated with TGs, total cholesterol, and non-high-density lipoprotein cholesterol. In this sample of patients with stable CVD, current periodontal inflammation and tissue breakdown are associated with cardiovascular inflammatory markers, such as CRP and lipid profile.

Electrical properties of MOS devices fabricated on the 4H-SiC C-face.

NASA Astrophysics Data System (ADS)

Chen, Zengjun; Ahyi, A. C.; Williams, J. R.

2007-11-01

The electrical characteristics of MOS devices fabricated on the carbon face of 4H-SiC will be described. The C-face has a higher oxidation rate and a higher interface trap density compared to the Si-face. The thermal oxidation rate and the distribution of interface traps under different oxidation conditions will be discussed in this presentation. Sequential post-oxidation anneals in nitric oxide and hydrogen effectively reduces the interface density (Dit) near the conduction band edge. However, deeper in the band gap, the trap density remains higher compared to the Si-face. Time-dependent dielectric breakdown (TDDB) studies have also been performed to investigate oxide reliability on the C-face, and current-voltage measurements show that a low barrier height against carrier injection likely contributes to oxide degradation. Nevertheless, the effective channel mobility and threshold voltage for n-channel C-face lateral MOSFETs compare favorably with similar Si-face devices.

Trap Modulated Charge Carrier Transport in Polyethylene/Graphene Nanocomposites.

PubMed

Li, Zhonglei; Du, Boxue; Han, Chenlei; Xu, Hang

2017-06-21

The role of trap characteristics in modulating charge transport properties is attracting much attentions in electrical and electronic engineering, which has an important effect on the electrical properties of dielectrics. This paper focuses on the electrical properties of Low-density Polyethylene (LDPE)/graphene nanocomposites (NCs), as well as the corresponding trap level characteristics. The dc conductivity, breakdown strength and space charge behaviors of NCs with the filler content of 0 wt%, 0.005 wt%, 0.01 wt%, 0.1 wt% and 0.5 wt% are studied, and their trap level distributions are characterized by isothermal discharge current (IDC) tests. The experimental results show that the 0.005 wt% LDPE/graphene NCs have a lower dc conductivity, a higher breakdown strength and a much smaller amount of space charge accumulation than the neat LDPE. It is indicated that the graphene addition with a filler content of 0.005 wt% introduces large quantities of deep carrier traps that reduce charge carrier mobility and result in the homocharge accumulation near the electrodes. The deep trap modulated charge carrier transport attributes to reduce the dc conductivity, suppress the injection of space charges into polymer bulks and enhance the breakdown strength, which is of great significance in improving electrical properties of polymer dielectrics.

Electric field enhancement due to a saw-tooth asperity in a channel and implications on microscale gas breakdown

NASA Astrophysics Data System (ADS)

Venkattraman, Ayyaswamy

2014-10-01

The electric field enhancement due to an isolated saw-tooth asperity in an infinite channel is considered with the goal of providing some inputs to the choice of field enhancement factors used to describe microscale gas breakdown. The Schwarz-Christoffel transformation is used to map the interior of the channel to the upper half of the transformed plane. The expression for the electric field in the transformed plane is then used to determine the electric field distribution in the channel as well as field enhancement near the asperity. The effective field enhancement factor is determined and its dependence on operating and geometrical parameters is studied. While the effective field enhancement factor depends only weakly on the height of the asperity in comparison to the channel, it is influenced significantly by the base angles of the asperity. Due to the strong dependence of field emission current density on electric field, the effective field enhancement factor (βeff) is shown to vary rapidly with the applied electric field irrespective of the geometrical parameters. This variation is included in the analysis of microscale gas breakdown and compared with results obtained using a constant βeff as is done traditionally. Even though results for a varying βeff may be approximately reproduced using an equivalent constant βeff independent of E-field, it might be important for a range of operating conditions. This is confirmed by extracting βeff from experimental data for breakdown in argon microgaps with plane-parallel cathodes and comparing its dependence on the E-field. While the use of two-dimensional asperities is shown to be a minor disadvantage of the proposed approach in its current form, it can potentially help in developing predictive capabilities as opposed to treating βeff as a curve-fitting parameter.

Electrical Breakdown in Water Vapor

NASA Astrophysics Data System (ADS)

Škoro, N.; Marić, D.; Malović, G.; Graham, W. G.; Petrović, Z. Lj.

2011-11-01

In this paper investigations of the voltage required to break down water vapor are reported for the region around the Paschen minimum and to the left of it. In spite of numerous applications of discharges in biomedicine, and recent studies of discharges in water and vapor bubbles and discharges with liquid water electrodes, studies of the basic parameters of breakdown are lacking. Paschen curves have been measured by recording voltages and currents in the low-current Townsend regime and extrapolating them to zero current. The minimum electrical breakdown voltage for water vapor was found to be 480 V at a pressure times electrode distance (pd) value of around 0.6 Torr cm (˜0.8 Pa m). The present measurements are also interpreted using (and add additional insight into) the developing understanding of relevant atomic and particularly surface processes associated with electrical breakdown.

Impact of process parameters on the structural and electrical properties of metal/PZT/Al2O3/silicon gate stack for non-volatile memory applications

NASA Astrophysics Data System (ADS)

Singh, Prashant; Jha, Rajesh Kumar; Singh, Rajat Kumar; Singh, B. R.

2018-02-01

In this paper, we present the structural and electrical properties of the Al2O3 buffer layer on non-volatile memory behavior using Metal/PZT/Al2O3/Silicon structures. Metal/PZT/Silicon and Metal/Al2O3/Silicon structures were also fabricated and characterized to obtain capacitance and leakage current parameters. Lead zirconate titanate (PZT::35:65) and Al2O3 films were deposited by sputtering on the silicon substrate. Memory window, PUND, endurance, breakdown voltage, effective charges, flat-band voltage and leakage current density parameters were measured and the effects of process parameters on the structural and electrical characteristics were investigated. X-ray data show dominant (110) tetragonal phase of the PZT film, which crystallizes at 500 °C. The sputtered Al2O3 film annealed at different temperatures show dominant (312) orientation and amorphous nature at 425 °C. Multiple angle laser ellipsometric analysis reveals the temperature dependence of PZT film refractive index and extinction coefficient. Electrical characterization shows the maximum memory window of 3.9 V and breakdown voltage of 25 V for the Metal/Ferroelectric/Silicon (MFeS) structures annealed at 500 °C. With 10 nm Al2O3 layer in the Metal/Ferroelectric/Insulator/Silicon (MFeIS) structure, the memory window and breakdown voltage was improved to 7.21 and 35 V, respectively. Such structures show high endurance with no significant reduction polarization charge for upto 2.2 × 109 iteration cycles.

Electrode/Dielectric Strip For High-Energy-Density Capacitor

NASA Technical Reports Server (NTRS)

Yen, Shiao-Ping S.

1994-01-01

Improved unitary electrode/dielectric strip serves as winding in high-energy-density capacitor in pulsed power supply. Offers combination of qualities essential for high energy density: high permittivity of dielectric layers, thinness, and high resistance to breakdown of dielectric at high electric fields. Capacitors with strip material not impregnated with liquid.

Temperature and Electron Density Determination on Laser-Induced Breakdown Spectroscopy (LIBS) Plasmas: A Physical Chemistry Experiment

ERIC Educational Resources Information Center

Najarian, Maya L.; Chinni, Rosemarie C.

2013-01-01

This laboratory is designed for physical chemistry students to gain experience using laser-induced breakdown spectroscopy (LIBS) in understanding plasma diagnostics. LIBS uses a high-powered laser that is focused on the sample causing a plasma to form. The emission of this plasma is then spectrally resolved and detected. Temperature and electron…

Scaling laws for AC gas breakdown and implications for universality

NASA Astrophysics Data System (ADS)

Loveless, Amanda M.; Garner, Allen L.

2017-10-01

The reduced dependence on secondary electron emission and electrode surface properties makes radiofrequency (RF) and microwave (MW) plasmas advantageous over direct current (DC) plasmas for various applications, such as microthrusters. Theoretical models relating molecular constants to alternating current (AC) breakdown often fail due to incomplete understanding of both the constants and the mechanisms involved. This work derives simple analytic expressions for RF and MW breakdown, demonstrating the transition between these regimes at their high and low frequency limits, respectively. We further show that the limiting expressions for DC, RF, and MW breakdown voltage all have the same universal scaling dependence on pressure and gap distance at high pressure, agreeing with experiment.

Influence of the axial magnetic field on sheath development after current zero in a vacuum circuit breaker

NASA Astrophysics Data System (ADS)

Chen, Yi; Yang, Fei; Sun, Hao; Wu, Yi; Niu, Chunping; Rong, Mingzhe

2017-06-01

After current zero, which is the moment when the vacuum circuit breaker interrupts a vacuum arc, sheath development is the first process in the dielectric recovery process. An axial magnetic field (AMF) is widely used in the vacuum circuit breaker when the high-current vacuum arc is interrupted. Therefore, it is very important to study the influence of different AMF amplitudes on the sheath development. The objective of this paper is to study the influence of different AMF amplitudes on the sheath development from a micro perspective. Thus, the particle in cell-Monte Carlo collisions (PIC-MCC) method was adopted to develop the sheath development model. We compared the simulation results with the experimental results and then validated the simulation. We also obtained the speed of the sheath development and the energy density of the ions under different AMF amplitudes. The results showed that the larger the AMF amplitudes are, the faster the sheath develops and the lower the ion energy density is, meaning the breakdown is correspondingly more difficult.

Effects of Displacement Damage on the Time-Resolved Gain and Bandwidth of a Low Breakdown Voltage Si Avalanche Photodiode

NASA Technical Reports Server (NTRS)

Laird, Jamie S.; Onoda, Shinobu; Hirao, Toshio; Becker, Heidi; Johnston, Allan; Laird, Jamie S.; Itoh, Hisayoshi

2006-01-01

Effects of displacement damage and ionization damage induced by gamma irradiation on the dark current and impulse response of a high-bandwidth low breakdown voltage Si Avalanche Photodiode has been investigated using picosecond laser microscopy. At doses as high as 10Mrad (Si) minimal alteration in the impulse response and bandwidth were observed. However, dark current measurements also performed with and without biased irradiation exhibit anomalously large damage factors for applied biases close to breakdown. The absence of any degradation in the impulse response is discussed as are possible mechanisms for higher dark current damage factors observed for biased irradiation.

Noninductive RF startup in CDX-U

NASA Astrophysics Data System (ADS)

Jones, B.; Majeski, R.; Efthimion, P.; Kaita, R.; Menard, J.; Munsat, T.; Takase, Y.

1998-11-01

For the spherical torus (ST) to prove viable as a reactor, it will be necessary to devise techniques for noninductive plasma startup. Initial studies of noninductive plasma initiation have been performed on CDX-U, using the 100 kW high harmonic fast wave (HHFW) system in combination with the 1 kW 2.45 GHz electron cyclotron heating system used for breakdown. Modest density (ne ~ 10^12 cm-3), low temperature (5 eV) plasmas were formed, but the density profile was peaked far off-axis, very near the HHFW antenna. High neutral fill pressures were also required. In upcoming experiments, up to 500 kW of low frequency RF power will utilized for heating and noninductive current drive in the mode conversion regime in a target noninductive plasma formed by a combination of 5.6 and 14 GHz ECH (40 kW total). Modeling will be presented which indicates that startup to plasma currents of 60 kA is feasible with this system.

High thermal stability of abrupt SiO2/GaN interface with low interface state density

NASA Astrophysics Data System (ADS)

Truyen, Nguyen Xuan; Taoka, Noriyuki; Ohta, Akio; Makihara, Katsunori; Yamada, Hisashi; Takahashi, Tokio; Ikeda, Mitsuhisa; Shimizu, Mitsuaki; Miyazaki, Seiichi

2018-04-01

The effects of postdeposition annealing (PDA) on the interface properties of a SiO2/GaN structure formed by remote oxygen plasma-enhanced chemical vapor deposition (RP-CVD) were systematically investigated. X-ray photoelectron spectroscopy clarified that PDA in the temperature range from 600 to 800 °C has almost no effects on the chemical bonding features at the SiO2/GaN interface, and that positive charges exist at the interface, the density of which can be reduced by PDA at 800 °C. The capacitance-voltage (C-V) and current density-SiO2 electric field characteristics of the GaN MOS capacitors also confirmed the reduction in interface state density (D it) and the improvement in the breakdown property of the SiO2 film after PDA at 800 °C. Consequently, a high thermal stability of the SiO2/GaN structure with a low fixed charge density and a low D it formed by RP-CVD was demonstrated. This is quite informative for realizing highly robust GaN power devices.

Characteristics of edge breakdowns on Teflon samples

NASA Technical Reports Server (NTRS)

Yadlowsky, E. J.; Hazelton, R. C.; Churchill, R. J.

1980-01-01

The characteristics of electrical discharges induced on silverbacked Teflon samples irradiated by a monoenergetic electron beam have been studied under controlled laboratory conditions. Measurements of breakdown threshold voltages indicate a marked anisotropy in the electrical breakdown properties of Teflon: differences of up to 10 kV in breakdown threshold voltage are observed depending on the sample orientation. The material anisotropy can be utilized in spacecraft construction to reduce the magnitude of discharge currents.

Effect of secondary electron emission on subnanosecond breakdown in high-voltage pulse discharge

NASA Astrophysics Data System (ADS)

Schweigert, I. V.; Alexandrov, A. L.; Gugin, P.; Lavrukhin, M.; Bokhan, P. A.; Zakrevsky, Dm E.

2017-11-01

The subnanosecond breakdown in open discharge may be applied for producing superfast high power switches. Such fast breakdown in high-voltage pulse discharge in helium was explored both in experiment and in kinetic simulations. The kinetic model of electron avalanche development was developed using PIC-MCC technique. The model simulates motion of electrons, ions and fast helium atoms, appearing due to ions scattering. It was shown that the mechanism responsible for ultra-fast breakdown development is the electron emission from cathode. The photoemission and emission by ions or fast atoms impact is the main reason of current growth at the early stage of breakdown, but at the final stage, when the voltage on discharge gap drops, the secondary electron emission (SEE) is responsible for subnanosecond time scale of current growth. It was also found that the characteristic time of the current growth τS depends on the SEE yield of the cathode material. Three types of cathode material (titanium, SiC, and CuAlMg-alloy) were tested. It is shown that in discharge with SiC and CuAlMg-alloy cathodes (which have enhanced SEE) the current can increase with a subnanosecond characteristic time as small as τS = 0.4 ns, for the pulse voltage amplitude of 5- 12 kV..

Effect of barium titanate (BaTiO{sub 3}) additive on the short-term DC breakdown strength of polyethylene

DOE Office of Scientific and Technical Information (OSTI.GOV)

Khalil, M.S.; Henk, P.O.

1996-12-31

The use of additives to insulating materials is one of the methods to improve certain properties of these materials. Additives can also be used to provide more insight into some processes like conduction, space charge formation and breakdown under certain conditions of field application. In the present paper, the effect of the addition of fine particles 1 wt% BaTiO{sub 3} to plain low density polyethylene (LDPE) on the short-term dc breakdown strength of LDPE at room temperature was investigated. The characteristics of the used polyethylene are as follows: density 0.925 g/cm{sup 3}, melt index 0.25 g/10 min. The BaTiO{sub 3}more » used was laboratory grade with particle size less than 7 {micro}m. Special cylindrical test samples of both undoped and doped materials were used in this investigation. Stainless steel hemispherically tipped electrodes were embedded in the material by molding. The mean value of the gap length between the electrodes was 0.25 mm. The design of the test sample allows for determining the intrinsic breakdown strength of the material. The Weibull plots were used to analyze the breakdown test results. Analysis of the results indicate that the addition of BaTiO{sub 3} to LDPE has reduced the short term dc breakdown strength of the doped material by about 16% if compared with the corresponding value for the plain LDPE. An attempt is made to correlate between the present results, and earlier published results about the effect of BaTiO{sub 3} on dc conductivity and space charge formation in LDPE.« less

Correlation of Electron-Transfer Rates with the Surface Density of States of Native and Anodically Grown Oxide Films on Titanium

DTIC Science & Technology

1990-11-16

materials. v :67:RiB T7;N, AVAILA81UTY CF ABS-.RAC- 21. ABSTRAC7 SEC-RTY C .SSi~ CAT ;CN X NC_SSF:E- /UNL:MITE- : C SA.ME AS ;P’ C C jSE’S Unclassified i...value in ambient environments. Localized breakdown of the native film occurs in chemically aggresive environments (e.g., aqueous Br- solutions...oxide film, Fig. 1 (c), show highly rectifying behavior , in agreement with expectations for a large band gap semiconductor. The tunneling current at each

Fundamentals of undervoltage breakdown through the Townsend mechanism

NASA Astrophysics Data System (ADS)

Cooley, James E.

The conditions under which an externally supplied pulse of electrons will induce breakdown in an undervoltaged, low-gain, DC discharge gap are experimentally and theoretically explored. The phenomenon is relevant to fundamental understanding of breakdown physics, to switching applications such as triggered spark gaps and discharge initiation in pulsed-plasma thrusters, and to gas-avalanche particle counters. A dimensionless theoretical description of the phenomenon is formulated and solved numerically. It is found that a significant fraction of the charge on the plates must be injected for breakdown to be achieved at low avalanche-ionization gain, when an electron undergoes fewer than approximately 10 ionizing collisions during one gap transit. It is also found that fewer injected electrons are required as the gain due to electron-impact ionization (alpha process) is increased, or as the sensitivity of the alpha process to electric field is enhanced by decreasing the reduced electric field (electric field divided by pressure, E/p). A predicted insensitivity to ion mobility implies that breakdown is determined during the first electron avalanche when space charge distortion is greatest. A dimensionless, theoretical study of the development of this avalanche reveals a critical value of the reduced electric field to be the value at the Paschen curve minimum divided by 1.6. Below this value, the net result of the electric field distortion is to increase ionization for subsequent avalanches, making undervoltage breakdown possible. Above this value, ionization for subsequent avalanches will be suppressed and undervoltage breakdown is not possible. Using an experimental apparatus in which ultraviolet laser pulses are directed onto a photo-emissive cathode of a parallel-plate discharge gap, it is found that undervoltage breakdown can occur through a Townsend-like mechanism through the buildup of successively larger avalanche generations. The minimum number of injected electrons required to achieve breakdown is measured in argon at pd values of 3-10 Torr-m. The required electron pulse magnitude was found to scale inversely with pressure and voltage in this parameter range. When higher-power infrared laser pulses were used to heat the cathode surface, a faster, streamer-like breakdown mechanism was occasionally observed. As an example application, an investigation into the requirements for initiating discharges in Gas-fed Pulsed Plasma Thrusters (GFPPTs) is conducted. Theoretical investigations based on order-of-magnitude characterizations of previous GFPPT designs reveal that high-conductivity arc discharges are required for critically-damped matching of circuit components, and that relatively fast streamer breakdown is preferable to minimize delay between triggering and current sheet formation. The faster breakdown mechanism observed in the experiments demonstrates that such a discharge process can occur. However, in the parameter space occupied by most thrusters, achieving the phenomenon by way of a space charge distortion caused purely by an electron pulse should not be possible. Either a transient change in the distribution of gas density, through ablation or desorption, or a thruster design that occupies a different parameter space, such as one that uses higher mass bits, higher voltages, or smaller electrode spacing, is required for undervoltage breakdown to occur.

Three-Dimensional Nanometer Features of Direct Current Electrical Trees in Low-Density Polyethylene.

PubMed

Pallon, Love K H; Nilsson, Fritjof; Yu, Shun; Liu, Dongming; Diaz, Ana; Holler, Mirko; Chen, Xiangrong R; Gubanski, Stanislaw; Hedenqvist, Mikael S; Olsson, Richard T; Gedde, Ulf W

2017-03-08

Electrical trees are one reason for the breakdown of insulating materials in electrical power systems. An understanding of the growth of electrical trees plays a crucial role in the development of reliable high voltage direct current (HVDC) power grid systems with transmission voltages up to 1 MV. A section that contained an electrical tree in low-density polyethylene (LDPE) has been visualized in three dimensions (3D) with a resolution of 92 nm by X-ray ptychographic tomography. The 3D imaging revealed prechannel-formations with a lower density with the width of a couple of hundred nanometers formed around the main branch of the electrical tree. The prechannel structures were partially connected with the main tree via paths through material with a lower density, proving that the tree had grown in a step-by-step manner via the prestep structures formed in front of the main channels. All the prechannel structures had a size well below the limit of the Paschen law and were thus not formed by partial discharges. Instead, it is suggested that the prechannel structures were formed by electro-mechanical stress and impact ionization, where the former was confirmed by simulations to be a potential explanation with electro-mechanical stress tensors being almost of the same order of magnitude as the short-term modulus of low-density polyethylene.

Blackbody Emission from Laser Breakdown in High-Pressure Gases

NASA Astrophysics Data System (ADS)

Bataller, A.; Plateau, G. R.; Kappus, B.; Putterman, S.

2014-08-01

Laser induced breakdown of pressurized gases is used to generate plasmas under conditions where the atomic density and temperature are similar to those found in sonoluminescing bubbles. Calibrated streak spectroscopy reveals that a blackbody persists well after the exciting femtosecond laser pulse has turned off. Deviation from Saha's equation of state and an accompanying large reduction in ionization potential are observed at unexpectedly low atomic densities—in parallel with sonoluminescence. In laser breakdown, energy input proceeds via excitation of electrons whereas in sonoluminescence it is initiated via the atoms. The similar responses indicate that these systems are revealing the thermodynamics and transport of a strongly coupled plasma.

Nanocomposites with increased energy density through high aspect ratio PZT nanowires.

PubMed

Tang, Haixiong; Lin, Yirong; Andrews, Clark; Sodano, Henry A

2011-01-07

High energy storage plays an important role in the modern electric industry. Herein, we investigated the role of filler aspect ratio in nanocomposites for energy storage. Nanocomposites were synthesized using lead zirconate titanate (PZT) with two different aspect ratio (nanowires, nanorods) fillers at various volume fractions dispersed in a polyvinylidene fluoride (PVDF) matrix. The permittivity constants of composites containing nanowires (NWs) were higher than those with nanorods (NRs) at the same inclusion volume fraction. It was also indicated that the high frequency loss tangent of samples with PZT nanowires was smaller than for those with nanorods, demonstrating the high electrical energy storage efficiency of the PZT NW nanocomposite. The high aspect ratio PZT NWs showed a 77.8% increase in energy density over the lower aspect ratio PZT NRs, under an electric field of 15 kV mm(-1) and 50% volume fraction. The breakdown strength was found to decrease with the increasing volume fraction of PZT NWs, but to only change slightly from a volume fraction of around 20%-50%. The maximum calculated energy density of nanocomposites is as high as 1.158 J cm(-3) at 50% PZT NWs in PVDF. Since the breakdown strength is lower compared to a PVDF copolymer such as poly(vinylidene fluoride-tertrifluoroethylene-terchlorotrifluoroethylene) P(VDF-TreEE-CTFE) and poly(vinylidene fluoride-co-hexafluoropropylene) P(VDF-HFP), the energy density of the nanocomposite could be significantly increased through the use of PZT NWs and a polymer with greater breakdown strength. These results indicate that higher aspect ratio fillers show promising potential to improve the energy density of nanocomposites, leading to the development of advanced capacitors with high energy density.

Explosion of thin aluminum foils in air

NASA Astrophysics Data System (ADS)

Baksht, R.; Pokryvailo, A.; Yankelevich, Y.; Ziv, I.

2004-12-01

An inductive-based power supply (240μH, 50kA) was used for the investigation of the foil explosion process in the time range of 0.05ms

Measurements of Breakdown Field and Forward Current Stability in 3C-SiC P-N Junction Diodes Grown on Step-Free 4H-SiC

NASA Technical Reports Server (NTRS)

Neudeck, Philip G.; Spry, David J.; Trunek, Andrew J.

2005-01-01

This paper reports on initial fabrication and electrical characterization of 3C-SiC p-n junction diodes grown on step-free 4H-SiC mesas. Diodes with n-blocking-layer doping ranging from approx. 2 x 10(exp 16)/cu cm to approx.. 5 x 10(exp 17)/cu cm were fabricated and tested. No optimization of junction edge termination or ohmic contacts was employed. Room temperature reverse characteristics of the best devices show excellent low-leakage behavior, below previous 3C-SiC devices produced by other growth techniques, until the onset of a sharp breakdown knee. The resulting estimated breakdown field of 3C-SiC is at least twice the breakdown field of silicon, but is only around half the breakdown field of <0001> 4H-SiC for the doping range studied. Initial high current stressing of 3C diodes at 100 A/sq cm for more than 20 hours resulted in less than 50 mV change in approx. 3 V forward voltage. 3C-SiC, pn junction, p+n diode, rectifier, reverse breakdown, breakdown field,heteroepitaxy, epitaxial growth, electroluminescence, mesa, bipolar diode

Hole injection and dielectric breakdown in 6H-SiC and 4H-SiC metal-oxide-semiconductor structures during substrate electron injection via Fowler-Nordheim tunneling

NASA Astrophysics Data System (ADS)

Samanta, Piyas; Mandal, Krishna C.

2015-12-01

Hole injection into silicon dioxide (SiO2) films (8-40 nm thick) is investigated for the first time during substrate electron injection via Fowler-Nordheim (FN) tunneling in n-type 4H- and 6H-SiC (silicon carbide) based metal-oxide-semiconductor (MOS) structures at a wide range of temperatures (T) between 298 and 598 K and oxide electric fields Eox from 6 to 10 MV/cm. Holes are generated in heavily doped n-type polycrystalline silicon (n+ -polySi) gate serving as the anode as well as in the bulk silicon dioxide (SiO2) film via hot-electron initiated band-to-band ionization (BTBI). In absence of oxide trapped charges, it is shown that at a given temperature, the hole injection rates from either of the above two mechanisms are higher in n-4H-SiC MOS devices than those in n-6H-SiC MOS structures when compared at a given Eox and SiO2 thickness (tox). On the other hand, relative to n-4H-SiC devices, n-6H-SiC structures exhibit higher hole injection rates for a given tox during substrate electron injection at a given FN current density je,FN throughout the temperature range studied here. These two observations clearly reveal that the substrate material (n-6H-SiC and n-4H-SiC) dependencies on time-to-breakdown (tBD) or injected charge (electron) to breakdown (QBD) of the SiO2 film depend on the mode of FN injections (constant field/voltage and current) from the substrate which is further verified from the rigorous device simulation as well.

[Effect of chloride ion on corrosion of two commonly used dental alloys].

PubMed

Chen, Lei; Zhang, Weidan; Zhang, Yuanyuan

2014-11-01

To investigate the eff ect of chloride concentration on the corrosion of Co-Cr alloy and pure Ti in a simulated oral environment. The electrochemical corrosion tests of pure Ti and Co-Cr alloy were carried out in neutral artificial saliva solutions with different NaCl concentrations (0.9%, 2.0%, and 3.0%). Th e morphologies of corroded surface for pure Ti and Co-Cr alloy were observed by scanning electron microscope (SEM). Th e changes in the self-corrosion potentials (Ecorr) for pure Ti and Co-Cr alloy in three kinds of artificial saliva solutions was not obvious. However, the self-corrosion current densities (Icorr) of pure Ti were much lower than those of Co-Cr. The Icorr of Co-Cr alloy increased in a concentration-dependent manner of NaCl, whereas the breakdown potential (Eb) of Co-Cr alloy decreased in a concentration-dependent manner. Th e potential ranged for the breakdown of oxide film (Ev) was shortened in a concentration-dependent manner of NaCl. There was no obvious difference in the Icorr of pure Ti with different concentrations of NaCl. The breakdown potential was not seen according to the polarization curves. In a certain range, the increase of the concentration of Cl- leads to accelerate the corrosion behavior of Co-Cr alloy, but it does not affect pure Ti.

On the Geometrical Optics Approach in the Theory of Freely-Localized Microwave Gas Breakdown

NASA Astrophysics Data System (ADS)

Shapiro, Michael; Schaub, Samuel; Hummelt, Jason; Temkin, Richard; Semenov, Vladimir

2015-11-01

Large filamentary arrays of high pressure gas microwave breakdown have been experimentally studied at MIT using a 110 GHz, 1.5 MW pulsed gyrotron. The experiments have been modeled by other groups using numerical codes. The plasma density distribution in the filaments can be as well analytically calculated using the geometrical optics approach neglecting plasma diffusion. The field outside the filament is a solution of an inverse electromagnetic problem. The solutions are found for the cylindrical and spherical filaments and for the multi-layered planar filaments with a finite plasma density at the boundaries. We present new results of this theory showing a variety of filaments with complex shapes. The solutions for plasma density distribution are found with a zero plasma density at the boundary of the filament. Therefore, to solve the inverse problem within the geometrical optics approximation, it can be assumed that there is no reflection from the filament. The results of this research are useful for modeling future MIT experiments.

Comparative influence study of gate-formation structuring on Al0.22Ga0.78As/In0.16Ga0.84As/Al0.22Ga0.78As double heterojunction high electron mobility transistors

NASA Astrophysics Data System (ADS)

Hsu, M. K.; Chiu, S. Y.; Wu, C. H.; Guo, D. F.; Lour, W. S.

2008-12-01

Pseudomorphic Al0.22Ga0.78As/In0.16Ga0.84As/Al0.22Ga0.78As double heterojunction high electron mobility transistors (DH-HEMTs) fabricated with different gate-formation structures of a single-recess gate (SRG), a double-recess gate (DRG) and a field-plate gate (FPG) were comparatively investigated. FPG devices show the best breakdown characteristics among these devices due to great reduction in the peak electric field between the drain and gate electrodes. The measured gate-drain breakdown voltages defined at a 1 mA mm-1 reverse gate-drain current density were -15.3, -19.1 and -26.0 V for SRG, DRG and FPG devices, respectively. No significant differences in their room-temperature common-source current-voltage characteristics were observed. However, FPG devices exhibit threshold voltages being the least sensitive to temperature. Threshold voltages as a function of temperature indicate a threshold-voltage variation as low as -0.97 mV K-1 for FPG devices. According to the 2.4 GHz load-pull power measurement at VDS = 3.0 V and VGS = -0.5 V, the saturated output power (POUT), power gain (GP) and maximum power-added efficiency (PAE) were 10.3 dBm/13.2 dB/36.6%, 11.2 dBm/13.1 dB/39.7% and 13.06 dBm/12.8 dB/47.3%, respectively, for SRG, DRG and FPG devices with a pi-gate in class AB operation. When the FPG device is biased at a VDS of 10 V, the saturated power density is more than 600 mW mm-1.

Electron density and gas density measurements in a millimeter-wave discharge

DOE Office of Scientific and Technical Information (OSTI.GOV)

Schaub, S. C., E-mail: sschaub@mit.edu; Hummelt, J. S.; Guss, W. C.

2016-08-15

Electron density and neutral gas density have been measured in a non-equilibrium air breakdown plasma using optical emission spectroscopy and two-dimensional laser interferometry, respectively. A plasma was created with a focused high frequency microwave beam in air. Experiments were run with 110 GHz and 124.5 GHz microwaves at powers up to 1.2 MW. Microwave pulses were 3 μs long at 110 GHz and 2.2 μs long at 124.5 GHz. Electron density was measured over a pressure range of 25 to 700 Torr as the input microwave power was varied. Electron density was found to be close to the critical density, where the collisional plasma frequency is equal tomore » the microwave frequency, over the pressure range studied and to vary weakly with input power. Neutral gas density was measured over a pressure range from 150 to 750 Torr at power levels high above the threshold for initiating breakdown. The two-dimensional structure of the neutral gas density was resolved. Intense, localized heating was found to occur hundreds of nanoseconds after visible plasma formed. This heating led to neutral gas density reductions of greater than 80% where peak plasma densities occurred. Spatial structure and temporal dynamics of gas heating at atmospheric pressure were found to agree well with published numerical simulations.« less

The dark side of cosmology: dark matter and dark energy.

PubMed

Spergel, David N

2015-03-06

A simple model with only six parameters (the age of the universe, the density of atoms, the density of matter, the amplitude of the initial fluctuations, the scale dependence of this amplitude, and the epoch of first star formation) fits all of our cosmological data . Although simple, this standard model is strange. The model implies that most of the matter in our Galaxy is in the form of "dark matter," a new type of particle not yet detected in the laboratory, and most of the energy in the universe is in the form of "dark energy," energy associated with empty space. Both dark matter and dark energy require extensions to our current understanding of particle physics or point toward a breakdown of general relativity on cosmological scales. Copyright © 2015, American Association for the Advancement of Science.

Significantly Elevated Dielectric and Energy Storage Traits in Boron Nitride Filled Polymer Nano-composites with Topological Structure

NASA Astrophysics Data System (ADS)

Feng, Yefeng; Zhang, Jianxiong; Hu, Jianbing; Li, Shichun; Peng, Cheng

2018-03-01

Interface induced polarization has a prominent influence on dielectric properties of 0-3 type polymer based composites containing Si-based semi-conductors. The disadvantages of composites were higher dielectric loss, lower breakdown strength and energy storage density, although higher permittivity was achieved. In this work, dielectric, conductive, breakdown and energy storage properties of four nano-composites have been researched. Based on the cooperation of fluoropolymer/alpha-SiC layer and fluoropolymer/hexagonal-BN layer, it was confirmed constructing the heterogeneous layer-by-layer composite structure rather than homogeneous mono-layer structure could significantly reduce dielectric loss, promote breakdown strength and increase energy storage density. The former worked for a larger dielectric response and the latter layer acted as a robust barrier of charge carrier transfer. The best nano-composite could possess a permittivity of 43@100 Hz ( 3.3 times of polymer), loss of 0.07@100 Hz ( 37% of polymer), discharged energy density of 2.23 J/cm3@249 kV/cm ( 10 times of polymer) and discharged energy efficiency of 54%@249 kV/cm ( 5 times of polymer). This work might enlighten a facile route to achieve the promising high energy storage composite dielectrics by constructing the layer-by-layer topological structure.

Electric breakdowns of the "plasma capacitors" occurs on insulation coating of the ISS surface

NASA Astrophysics Data System (ADS)

Homin, Taras; Korsun, Anatolii

High electric fields and currents are occurred in the spacecrafts plasma environment by onboard electric generators. Thus the high voltage solar array (SA) of the American segment of International Space Station (ISS) generates potential 160 V. Its negative pole is shorted to the frames of all the ISS segments. There is electric current between the SA and the frame through the plasma environment, i.e. electric discharge occurs. As a result a potential drop exists between the frames of all the ISS segments and the environmental plasma [1], which is cathode drop potential varphi _{c} defined. When ISS orbiting, the φc varies greatly in the range 0-100 V. A large area of the ISS frames and SA surface is coated with a thin dielectric film. Because of cathode drop potential the frame surfaces accumulate ion charges and the SA surfaces accumulate electron charges. These surfaces become plasma capacitors, which accumulate much charge and energy. Micrometeorite impacts or buildup of potential drop in excess of breakdown threshold varphi_{b} (varphi _{c} > varphi _{b} = 60 V) may cause breakdowns of these capacitors. Following a breakdown, the charge collected at the surfaces disperses and transforms into a layer of dense plasma [2]. This plasma environment of the spacecraft produces great pulsed electric fields E at the frame surfaces as well as heavy currents between construction elements which in turn induce great magnetic fields H. Therefore the conductive frame and the environmental plasma is plasma inductors. We have calculated that the densities of these pulsing and high-frequency fields E and H generated in the plasma environment of the spacecraft may exceed values hazardous to human. Besides, these fields must induce large electromagnetic impulses in the space-suit and in the power supply and control circuits of onboard systems. During astronaut’s space-suit activity, these fields will penetrate the space-suit and the human body with possible hazardous effects. These effects need to be studied, and appropriate remedies are to be developed. References 1. Mikatarian, R., et al., «Electrical Charging of the International Space Station», AIAA Paper No. 2003-1079, 41th. Aerospace Sciences Meeting and Exhibit, January 2003. 2. A.G. Korsun, «Electric discharge processes intensification mechanisms on International Space Station surface». Astronautics and rocket production, 1, 2011 (in Russian).

Breakdown of the Frozen-in Condition and Plasma Acceleration: Dynamical Theory

NASA Astrophysics Data System (ADS)

Song, Y.; Lysak, R. L.

2007-12-01

The magnetic reconnection hypothesis emphasizes the importance of the breakdown of the frozen-in condition, explains the strong dependence of the geomagnetic activity on the IMF, and approximates an average qualitative description for many IMF controlled effects in magnetospheric physics. However, some important theoretical aspects of reconnection, including its definition, have not been carefully examined. The crucial components of such models, such as the largely-accepted X-line reconnection picture and the broadly-used explanations of the breakdown of the frozen-in condition, lack complete theoretical support. The important irreversible reactive interaction is intrinsically excluded and overlooked in most reconnection models. The generation of parallel electric fields must be the result of a reactive plasma interaction, which is associated with the temporal changes and spatial gradients of magnetic and velocity shears (Song and Lysak, 2006). Unlike previous descriptions of the magnetic reconnection process, which depend on dissipative-type coefficients or some passive terms in the generalized Ohm's law, the reactive interaction is a dynamical process, which favors localized high magnetic and/or mechanical stresses and a low plasma density. The reactive interaction is often closely associated with the radiation of shear Alfvén waves and is independent of any assumed dissipation coefficients. The generated parallel electric field makes an irreversible conversion between magnetic energy and the kinetic energy of the accelerated plasma and the bulk flow. We demonstrate how the reactive interaction, e.g., the nonlinear interaction of MHD mesoscale wave packets at current sheets and in the auroral acceleration region, can create and support parallel electric fields, causing the breakdown of the frozen-in condition and plasma acceleration.

Identification and Analysis of Partial Shading Breakdown Sites in CuIn xGa (1-x)Se 2 Modules

DOE Office of Scientific and Technical Information (OSTI.GOV)

Palmiotti, Elizabeth; Johnston, Steven; Gerber, Andreas

In this paper, CuIn xGa (1-x) (CIGS) mini-modules are stressed under reverse bias, resembling partial shading conditions, to predict and characterize where failures occur. Partial shading can cause permanent damage in the form of 'wormlike' defects on thin-film modules due to thermal runaway. This results in module-scale power losses. We have used dark lock-in thermography (DLIT) to spatially observe localized heating when reverse-bias breakdown occurs on various CIGS mini-modules. For better understanding of how and where these defects originated and propagated, we have developed techniques where the current is limited during reverse-bias stressing. This allows for DLIT-based detection and detailedmore » studying of the region where breakdown is initiated before thermal runaway leads to permanent damage. Statistics of breakdown sites using current-limited conditions has allowed for reasonable identification of the as-grown defects where permanent breakdown will likely originate. Scanning electron microscope results and wormlike defect analysis show that breakdown originates in defects such as small pits, craters, or cracks in the CIGS layer, and the wormlike defects propagate near the top CIGS interface.« less

Identification and Analysis of Partial Shading Breakdown Sites in CuIn xGa (1-x)Se 2 Modules

DOE PAGES

Palmiotti, Elizabeth; Johnston, Steven; Gerber, Andreas; ...

2017-12-20

In this paper, CuIn xGa (1-x) (CIGS) mini-modules are stressed under reverse bias, resembling partial shading conditions, to predict and characterize where failures occur. Partial shading can cause permanent damage in the form of 'wormlike' defects on thin-film modules due to thermal runaway. This results in module-scale power losses. We have used dark lock-in thermography (DLIT) to spatially observe localized heating when reverse-bias breakdown occurs on various CIGS mini-modules. For better understanding of how and where these defects originated and propagated, we have developed techniques where the current is limited during reverse-bias stressing. This allows for DLIT-based detection and detailedmore » studying of the region where breakdown is initiated before thermal runaway leads to permanent damage. Statistics of breakdown sites using current-limited conditions has allowed for reasonable identification of the as-grown defects where permanent breakdown will likely originate. Scanning electron microscope results and wormlike defect analysis show that breakdown originates in defects such as small pits, craters, or cracks in the CIGS layer, and the wormlike defects propagate near the top CIGS interface.« less

Laser Radiation-Induced Air Breakdown And Plasma Shielding

NASA Astrophysics Data System (ADS)

Smith, David C.

1981-12-01

Gas breakdown, or the ionization of the air in the path of a high power laser, is a limit on the maximum intensity which can be propagated through the atmosphere. When the threshold for breakdown is exceeded, a high density, high temperature plasma is produced which is opaque to visible and infrared wavelengths and thus absorbs the laser radiation. The threshold in the atmosphere is significantly lower than in pure gases because of laser interaction and vaporization of aerosols. This aspect of air breakdown is discussed in detail. Parametric studies have revealed the scaling laws of breakdown as to wavelength and laser pulse duration, and these will be discussed and compared with existing models. A problem closely related to breakdown is the plasma produc-tion when a high intensity laser interacts with a surface. In this case, the plasma can be beneficial for coupling laser energy into shiny surfaces. The plasma absorbs the laser radiation and reradiates the energy at shorter wavelengths; this shorter wavelength radiation is absorbed by the surface, thus increasing the coupling of energy into the surface. The conditions for the enhancement of laser coupling into surfaces will be discussed, particularly for cw laser beams, an area of recent experimen-tal investigation.

BPM Breakdown Potential in the PEP-II B-factory Storage Ring Collider

DOE Office of Scientific and Technical Information (OSTI.GOV)

Weathersby, Stephen; Novokhatski, Alexander; /SLAC

2010-02-10

High current B-Factory BPM designs incorporate a button type electrode which introduces a small gap between the button and the beam chamber. For achievable currents and bunch lengths, simulations indicate that electric potentials can be induced in this gap which are comparable to the breakdown voltage. This study characterizes beam induced voltages in the existing PEP-II storage ring collider BPM as a function of bunch length and beam current.

Comparative study of CAVET with dielectric and p-GaN gate and Mg ion-implanted current blocking layer

NASA Astrophysics Data System (ADS)

Mandal, Saptarshi; Agarwal, Anchal; Ahmadi, Elaheh; Mahadeva Bhat, K.; Laurent, Matthew A.; Keller, Stacia; Chowdhury, Srabanti

2017-08-01

In this work, a study of two different types of current aperture vertical electron transistor (CAVET) with ion-implanted blocking layer are presented. The device fabrication and performance limitation of a CAVET with a dielectric gate is discussed, and the breakdown limiting structure is evaluated using on-wafer test structures. The gate dielectric limited the device breakdown to 50V, while the blocking layer was able to withstand over 400V. To improve the device performance, an alternative CAVET structure with a p-GaN gate instead of dielectric is designed and realized. The pGaN gated CAVET structure increased the breakdown voltage to over 400V. Measurement of test structures on the wafer showed the breakdown was limited by the blocking layer instead of the gate p-n junction.

Characterization of ultrathin insulators in CMOS technology: Wearout and failure mechanisms due to processing and operation

NASA Astrophysics Data System (ADS)

Okandan, Murat

In the CMOS technology the gate dielectric is the most critical layer, as its condition directly dictates the ultimate performance of the devices. In this thesis, the wear-out and failure mechanisms in ultra-thin (around 50A and lower) oxides are investigated. A new degradation phenomenon, quasi-breakdown (or soft-breakdown), and the annealing and stressing behavior of devices after quasi-breakdown are considered in detail. Devices that are in quasi-breakdown continue to operate as switches, but the gate leakage current is two orders of magnitude higher than the leakage in healthy devices and the stressing/annealing behavior of the devices are completely altered. This phenomenon is of utmost interest, since the reduction in SiO2 dielectric thickness has reached its physical limits, and the quasi-breakdown behavior is seen to dominate as a failure mode in this regime. The quasi-breakdown condition can be brought on by stresses during operation or processing. To further study this evolution through stresses and anneals, cyclic current-voltage (I-V) measurement has been further developed and utilized in this thesis. Cyclic IV is a simple and fast, two terminal measurement technique that looks at the transient current flowing in an MOS system during voltage sweeps from accumulation to inversion and back. During these sweeps, carrier trapping/detrapping, generation and recombination are observed. An experimental setup using a fast electrometer and analog to digital conversion (A/D) card and the software for control of the setup and data analysis were also developed to gain further insight into the detailed physics involved. Overall, the crucial aspects of wear-out and quasi-breakdown of ultrathin dielectrics, along with the methods for analyzing this evolution are presented in this thesis.

Application of dynamic displacement current for diagnostics of subnanosecond breakdowns in an inhomogeneous electric field

NASA Astrophysics Data System (ADS)

Shao, Tao; Tarasenko, Victor F.; Zhang, Cheng; Burachenko, Alexandr G.; Rybka, Dmitry V.; Kostyrya, Igor'D.; Lomaev, Mikhail I.; Baksht, Evgeni Kh.; Yan, Ping

2013-05-01

The breakdown of different air gaps at high overvoltages in an inhomogeneous electric field was investigated with a time resolution of up to 100 ps. Dynamic displacement current was used for diagnostics of ionization processes between the ionization wave front and a plane anode. It is demonstrated that during the generation of a supershort avalanche electron beam (SAEB) with amplitudes of ˜10 A and more, conductivity in the air gaps at the breakdown stage is ensured by the ionization wave, whose front propagates from the electrode of small curvature radius, and by the dynamic displacement current between the ionization wave front and the plane electrode. The amplitude of the dynamic displacement current measured by a current shunt is 100 times greater than the SAEB. It is shown that with small gaps and with a large cathode diameter, the amplitude of the dynamic displacement current during a subnanosecond rise time of applied pulse voltage can be higher than 4 kA.

Study on the plasma generation characteristics of an induction-triggered coaxial pulsed plasma thruster

NASA Astrophysics Data System (ADS)

Weisheng, CUI; Wenzheng, LIU; Jia, TIAN; Xiuyang, CHEN

2018-02-01

At present, spark plugs are used to trigger discharge in pulsed plasma thrusters (PPT), which are known to be life-limiting components due to plasma corrosion and carbon deposition. A strong electric field could be formed in a cathode triple junction (CTJ) to achieve a trigger function under vacuum conditions. We propose an induction-triggered electrode structure on the basis of the CTJ trigger principle. The induction-triggered electrode structure could increase the electric field strength of the CTJ without changing the voltage between electrodes, contributing to a reduction in the electrode breakdown voltage. Additionally, it can maintain the plasma generation effect when the breakdown voltage is reduced in the discharge experiments. The induction-triggered electrode structure could ensure an effective trigger when the ablation distance of Teflon increases, and the magnetic field produced by the discharge current could further improve the plasma density and propagation velocity. The induction-triggered coaxial PPT we propose has a simplified trigger structure, and it is an effective attempt to optimize the micro-satellite thruster.

Performance Improvement of a Magnetized Coaxial Plasma Gun by adopting Iron-core Bias Coil and New Pre-Ionization System

NASA Astrophysics Data System (ADS)

Edo, Takahiro; Asai, T.; Tanaka, F.; Yamada, S.; Hosozawa, A.; Gota, H.; Roche, T.; Allfrey, I.; Matsumoto, T.

2017-10-01

A magnetized coaxial plasma gun (MCPG) is a device used to generate a compact toroid (CT), which has a spheromak-like configuration. A typical MCPG consists of a set of axisymmetric cylindrical electrodes, bias coil, and gas-puff valves. In order to expand the CT operating range, the distributions of the bias magnetic field and neutral gas have been investigated. We have developed a new means of generating stuffing flux. By inserting an iron core into the bias coil, the magnetic field increases dramatically; even a small current of a few Amps produces a sufficient bias field. According to a simulation result, it was also suggested that the radial distribution of the bias field is easily controlled. The ejected CT and the target FRC are cooled by excess neutral gas that typical MCPGs require to initiate a breakdown; therefore, we have adopted a miniature gun as a new pre-ionization (PI) system. By introducing this PI system, the breakdown occurs at lower neutral gas density so that the amount of excess neutral gas can be reduced.

Azimuthal Current Density Distribution Resulting from a Power Feed Vacuum Gap in Metallic Liner Experiments at 1 MA

NASA Astrophysics Data System (ADS)

Bott-Suzuki, Simon; Cordaro, S. W.; Caballero Bendixsen, L. S.; Atoyan, L.; Byvank, T.; Potter, W.; Kusse, B. R.; Greenly, J. B.; Hammer, D. A.; Chittenden, J. P.; Jennings, C. A.

2015-11-01

We present a study investigating the initiation of plasma in solid, metallic liners where the liner thickness is large compared to the collisionless skin depth. A vacuum gap is introduced in the power feed and we investigate the effect of this on the azimuthal initiation of plasma in the liner. We present optical emission data from aluminum liners on the 1 MA, 100ns COBRA generator. We use radial and axial gated imaging and streak photography, which show a dependence of onset of emission with the size of a small power-feed vacuum gap. The evolution of ``hot-spots'' generated from breakdown vacuum gap evolves relatively slowly and azimuthal uniformity is not observed on the experimental time-scale. We also show measurements of the B-field both outside and inside the liner, using miniature Bdot probes, which show a dependence on the liner diameter and thickness, and a correlation to the details of the breakdown. These data will be compared to magneto-hydrodynamic simulations to infer how such non-uniformities may affect full liner implosion experiments.

Effects of post-deposition annealing ambient on band alignment of RF magnetron-sputtered Y2O3 film on gallium nitride

PubMed Central

2013-01-01

The effects of different post-deposition annealing ambients (oxygen, argon, forming gas (95% N2 + 5% H2), and nitrogen) on radio frequency magnetron-sputtered yttrium oxide (Y2O3) films on n-type gallium nitride (GaN) substrate were studied in this work. X-ray photoelectron spectroscopy was utilized to extract the bandgap of Y2O3 and interfacial layer as well as establishing the energy band alignment of Y2O3/interfacial layer/GaN structure. Three different structures of energy band alignment were obtained, and the change of band alignment influenced leakage current density-electrical breakdown field characteristics of the samples subjected to different post-deposition annealing ambients. Of these investigated samples, ability of the sample annealed in O2 ambient to withstand the highest electric breakdown field (approximately 6.6 MV/cm) at 10−6 A/cm2 was related to the largest conduction band offset of interfacial layer/GaN (3.77 eV) and barrier height (3.72 eV). PMID:23360596

Novel Physical Model for DC Partial Discharge in Polymeric Insulators

NASA Astrophysics Data System (ADS)

Andersen, Allen; Dennison, J. R.

The physics of DC partial discharge (DCPD) continues to pose a challenge to researchers. We present a new physically-motivated model of DCPD in amorphous polymers based on our dual-defect model of dielectric breakdown. The dual-defect model is an extension of standard static mean field theories, such as the Crine model, that describe avalanche breakdown of charge carriers trapped on uniformly distributed defect sites. It assumes the presence of both high-energy chemical defects and low-energy thermally-recoverable physical defects. We present our measurements of breakdown and DCPD for several common polymeric materials in the context of this model. Improved understanding of DCPD and how it relates to eventual dielectric breakdown is critical to the fields of spacecraft charging, high voltage DC power distribution, high density capacitors, and microelectronics. This work was supported by a NASA Space Technology Research Fellowship.

Simulation Study of Single-Event Burnout in Power Trench ACCUFETs

NASA Astrophysics Data System (ADS)

Yu, Cheng-Hao; Wang, Ying; Fei, Xin-Xing; Cao, Fei

2016-10-01

This paper presents 2-D numerical simulation results of single-event burnout (SEB) in power trench accumulation mode field effect transistor (ACCUFET) for the first time. In this device, a p+ base region is used to deplete the n- base region to achieve a low leakage current density, and the blocking voltage is supported by the n- drift region. We find that the depth of the p+ base region determines both the leakage current density and SEB performance, as a result, there is a tradeoff relationship between the two characteristics. The 60 V hardened power ACCUFET shown in this paper could demonstrate much better SEB performance without sacrificing the current handling capability compared with the standard UMOSFET. The hardened structure mentioned in this paper indicates that an n buffer layer is added between the epitaxial layer and substrate layer based on a basic power device. As a result, the safe operating area (SOA) of the 60 V, 80 V and 100 V hardened ACCUFET discussed in this paper could reach the value of breakdown voltage when the buffer layer is over a certain value, that can realize safety operation throughout entire LET range.

Impact of volume and surface processes on the pre-ionization of dielectric barrier discharges: advanced diagnostics and fluid modeling

NASA Astrophysics Data System (ADS)

Nemschokmichal, Sebastian; Tschiersch, Robert; Höft, Hans; Wild, Robert; Bogaczyk, Marc; Becker, Markus M.; Loffhagen, Detlef; Stollenwerk, Lars; Kettlitz, Manfred; Brandenburg, Ronny; Meichsner, Jürgen

2018-05-01

The phenomenology and breakdown mechanism of dielectric barrier discharges are strongly determined by volume and surface memory effects. In particular, the pre-ionization provided by residual species in the volume or surface charges on the dielectrics influences the breakdown behavior of filamentary and diffuse discharges. This was investigated by advanced diagnostics such as streak camera imaging, laser photodetachment of negative ions and laser photodesorption of electrons from dielectric surfaces in correlation with 1D fluid modeling. The streak camera images show that an increasing number of residual charges in the volume changes the microdischarge breakdown in air-like gas mixtures from a cathode-directed streamer to a simultaneous propagation of cathode- and anode-directed streamers. In contrast, seed electrons are important for the pre-ionization if the density of residual charges in the volume is low. One source of seed electrons are negative ions, whose density exceeds the electron density during the pre-phase of diffuse helium-oxygen barrier discharges as indicated by the laser photodetachment experiments. Electrons desorbed from the cathodic dielectric have an even larger influence. They induce a transition from the glow-like to the Townsend-like discharge mode in nominally pure helium. Apart from analyzing the importance of the pre-ionization for the breakdown mechanism, the opportunities for manipulating the lateral structure and discharge modes are discussed. For this purpose, the intensity and diameter of a diffuse discharge in helium are controlled by an illuminated semiconducting barrier. Contribution to the Topical Issue "Fundamentals of Complex Plasmas", edited by Jürgen Meichsner, Michael Bonitz, Holger Fehske, Alexander Piel.

Experimental study of the processes accompanying argon breakdown in a long discharge tube at a reduced pressure

DOE Office of Scientific and Technical Information (OSTI.GOV)

Meshchanov, A. V.; Ionikh, Yu. Z., E-mail: y.ionikh@spbu.ru; Shishpanov, A. I.

Results are presented from experimental studies of the breakdown stage of a low-pressure discharge (1 and 5 Torr) in a glass tube the length of which (75 cm) is much larger than its diameter (2.8 cm). Breakdowns occurred under the action of positive voltage pulses with an amplitude of up to 9.4 kV and a characteristic rise time of 2–50 μs. The discharge current in the steady-state mode was 10–120 mA. The electrode voltage, discharge current, and radiation from the discharge gap were detected simultaneously. The dynamic breakdown voltage was measured, the prebreakdown ionization wave was recorded, and its velocitymore » was determined. The dependence of the discharge parameters on the time interval between voltage pulses (the socalled “memory effect”) was analyzed. The memory effect manifests itself in a decrease or an increase in the breakdown voltage and a substantial decrease in its statistical scatter. The time interval between pulses in this case can reach 0.5 s. The effect of illumination of the discharge tube with a light source on the breakdown was studied. It is found that the irradiation of the anode region of the tube by radiation with wavelengths of ≤500 nm substantially reduces the dynamic breakdown voltage. Qualitative explanations of the obtained results are offered.« less

High electric breakdown strength and energy density in vinylidene fluoride oligomer/poly(vinylidene fluoride) blend thin films

NASA Astrophysics Data System (ADS)

Rahimabady, Mojtaba; Chen, Shuting; Yao, Kui; Eng Hock Tay, Francis; Lu, Li

2011-10-01

Dense α-phase blend films of vinylidene fluoride (VDF) oligomer and poly(vinylidene fluoride) (PVDF) of various compositions were prepared from chemical solution deposition. The dielectric constant of the films was unexpectedly lower, and the mechanical strength was higher than either of the two components, leading to high electromechanical dielectric breakdown strength (>850 MV/m vs. 300˜500 MV/m for typical PVDF-based films). The properties were attributed to the unique blend structure with high crystallinity and densely packed rigid amorphous phase incorporating long and short chains. A maximum polarization of 162 mC/m2 and a large electric energy density up to 27.3 J/cm3 were obtained.

Experimental Study of Magnetic Field Production and Dielectric Breakdown of Auto-Magnetizing Liners

NASA Astrophysics Data System (ADS)

Shipley, Gabriel; Awe, Thomas; Hutchinson, Trevor; Hutsel, Brian; Slutz, Stephen; Lamppa, Derek

2017-10-01

AutoMag liners premagnetize the fuel in MagLIF targets and provide enhanced x-ray diagnostic access and increased current delivery without requiring external field coils. AutoMag liners are composite liners made with discrete metallic helical conduction paths separated by insulating material. First, a low dI/dt ``foot'' current pulse (1 MA in 100 ns) premagnetizes the fuel. Next, a higher dI/dt pulse with larger induced electric field initiates breakdown on the composite liner's; surface, switching the current from helical to axial to implode the liner. Experiments on MYKONOS have tested the premagnetization and breakdown phases of AutoMag and demonstrate axial magnetic fields above 90 Tesla for a 550 kA peak current pulse. Electric fields of 17 MV/m have been generated before breakdown. AutoMag may enhance MagLIF performance by increasing the premagnetization strength significantly above 30 T, thus reducing thermal-conduction losses and mitigating anomalous diffusion of magnetic field out of hotter fuel regions, by, for example, the Nernst thermoelectric effect. This project was funded in part by Sandia's Laboratory Directed Research and Development Program (Projects No. 200169 and 195306).

Ionizing gas breakdown waves in strong electric fields.

NASA Technical Reports Server (NTRS)

Klingbeil, R.; Tidman, D. A.; Fernsler, R. F.

1972-01-01

A previous analysis by Albright and Tidman (1972) of the structure of an ionizing potential wave driven through a dense gas by a strong electric field is extended to include atomic structure details of the background atoms and radiative effects, especially, photoionization. It is found that photoionization plays an important role in avalanche propagation. Velocities, electron densities, and temperatures are presented as a function of electric field for both negative and positive breakdown waves in nitrogen.

Space charge inhibition effect of nano-Fe{sub 3}O{sub 4} on improvement of impulse breakdown voltage of transformer oil based on improved Kerr optic measurements

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang, Qing, E-mail: yangqing@cqu.edu.cn; Yu, Fei; Sima, Wenxia

Transformer oil-based nanofluids (NFs) with 0.03 g/L Fe{sub 3}O{sub 4} nanoparticle content exhibit 11.2% higher positive impulse breakdown voltage levels than pure transformer oils. To study the effects of the Fe{sub 3}O{sub 4} nanoparticles on the space charge in transformer oil and to explain why the nano-modified transformer oil exhibits improved impulse breakdown voltage characteristics, the traditional Kerr electro-optic field mapping technique is improved by increasing the length of the parallel-plate electrodes and by using a photodetector array as a high light sensitivity device. The space charge distributions of pure transformer oil and of NFs containing Fe{sub 3}O{sub 4} nanoparticlesmore » can be measured using the improved Kerr electro-optic field mapping technique. Test results indicate a significant reduction in space charge density in the transformer oil-based NFs with the Fe{sub 3}O{sub 4} nanoparticles. The fast electrons are captured by the nanoparticles and are converted into slow-charged particles in the NFs, which then reduce the space charge density and result in a more uniform electric field distribution. Streamer propagation in the NFs is also obstructed, and the breakdown strengths of the NFs under impulse voltage conditions are also improved.« less

Gadolinium and 5-Aminolevulinic Acid-induced Protoporphyrin IX Levels in Human Gliomas: An Ex Vivo Quantitative Study to Correlate Protoporphyrin IX Levels and Blood-Brain Barrier Breakdown

PubMed Central

Valdés, Pablo A.; Moses, Ziev B.; Kim, Anthony; Belden, Clifford J.; Wilson, Brian C.; Paulsen, Keith D.; Roberts, David W.; Harris, Brent T.

2012-01-01

In recent years, 5-aminolevulinic acid (ALA)-induced protoporphyrin IX (PpIX) fluorescence guidance has been used as a surgical adjunct to improve the extent of resection of gliomas. Exogenous administration of ALA prior to surgery leads to the accumulation of red fluorescent PpIX in tumor tissue that the surgeon can visualize and thereby discriminate between normal and tumor tissue. Selective accumulation of PpIX has been linked to numerous factors, of which blood-brain barrier (BBB) breakdown has been suggested to be a key factor. To test the hypothesis that PpIX concentration (CPpIX) positively correlates with gadolinium (Gd) concentrations (CGd), we performed ex vivo measurements of PpIX and of Gd using Inductively-Coupled Plasma Mass Spectrometry (ICP-MS) the latter as a quantitative biomarker of BBB breakdown; this was corroborated with immunohistochemistry of microvascular density in surgical biopsies of patients undergoing fluorescence guided surgery for glioma .We found positive correlations between CPpIX and CGd (r = 0.58, p < 0.0001), and between CPpIX and microvascular density (r = 0.55, p < 0.0001), suggesting a significant, yet limited association between BBB breakdown and ALA-induced PpIX fluorescence. To our knowledge, this is the first time that Gd measurements by ICP-MS have been used in human gliomas. PMID:22878664

Breakdown voltage determination of gaseous and near cryogenic fluids with application to rocket engine ignition

NASA Astrophysics Data System (ADS)

Nugent, Nicholas Jeremy

Liquid rocket engines extensively use spark-initiated torch igniters for ignition. As the focus shifts to longer missions that require multiple starts of the main engines, there exists a need to solve the significant problems associated with using spark-initiated devices. Improving the fundamental understanding of predicting the required breakdown voltage in rocket environments along with reducing electrical noise is necessary to ensure that missions can be completed successfully. To better understand spark ignition systems and add to the fundamental research on spark development in rocket applications, several parameter categories of interest were hypothesized to affect breakdown voltage: (i) fluid, (ii) electrode, and (iii) electrical. The fluid properties varied were pressure, temperature, density and mass flow rate. Electrode materials, insert electrode angle and spark gap distance were the electrode properties varied. Polarity was the electrical property investigated. Testing how breakdown voltage is affected by each parameter was conducted using three different isolated insert electrodes fabricated from copper and nickel. A spark plug commonly used in torch igniters was the other electrode. A continuous output power source connected to a large impedance source and capacitance provided the pulsing potential. Temperature, pressure and high voltage measurements were recorded for the 418 tests that were successfully completed. Nitrogen, being inert and similar to oxygen, a propellant widely used in torch igniters, was used as the fluid for the majority of testing. There were 68 tests completed with oxygen and 45 with helium. A regression of the nitrogen data produced a correction coefficient to Paschen's Law that predicts the breakdown voltage to within 3000 volts, better than 20%, compared to an over prediction on the order of 100,000 volts using Paschen's Law. The correction coefficient is based on the parameters most influencing breakdown voltage: fluid density, spark gap distance, electrode angles, electrode materials and polarity. The research added to the fundamental knowledge of spark development in rocket ignition applications by determining the parameters that most influence breakdown voltage. Some improvements to the research should include better temperature measurements near the spark gap, additional testing with oxygen and testing with fuels of interest such as hydrogen and methane.

Field Emission Enhancement and the Field-Screening Effect Reduction using Carbon Nanopipettes as Cold Cathodes

NASA Astrophysics Data System (ADS)

Safir, Abdelilah; Mudd, David; Yazdanpanah, Mehdi; Dobrokhotov, Vladimir; Sumanasekera, Gamini; Cohn, Robert

2008-03-01

In this work, we report a recent experimental study of high emission current densities exceeding 10mA/cm^2 and breakdown electric field lower than 5Volts/μm from novel cold cathodes such as conical shaped carbon nanopipettes (CNP). CNP were grown by CVD on Pt wire and have apex as sharp as 10nm with length between 3-6μm. The emission experiments were conducted under vacuum in a scanning electron microscope for individual CNP and in a dedicated chamber for bulk samples. CNP's conical bases and low density contribute significantly to the reduction of the screening effect and to the field emission enhancement. The experimental value for the field enhancement factor, γ, was about 867. Comparing emission results taken from CNP and aligned multiwall carbon nanotubes (MWNT) show that the ratio between γCNP and γMWNT is ˜1.6 which contributes to the reduction of screening effect. The emission from multilayers of graphene was also studied. High emission current (20μA) demonstrates promising emission properties of graphene.

30 nm T-gate enhancement-mode InAlN/AlN/GaN HEMT on SiC substrates for future high power RF applications

NASA Astrophysics Data System (ADS)

Murugapandiyan, P.; Ravimaran, S.; William, J.

2017-08-01

The DC and RF performance of 30 nm gate length enhancement mode (E-mode) InAlN/AlN/GaN high electron mobility transistor (HEMT) on SiC substrate with heavily doped source and drain region have been investigated using the Synopsys TCAD tool. The proposed device has the features of a recessed T-gate structure, InGaN back barrier and Al2O3 passivated device surface. The proposed HEMT exhibits a maximum drain current density of 2.1 A/mm, transconductance {g}{{m}} of 1050 mS/mm, current gain cut-off frequency {f}{{t}} of 350 GHz and power gain cut-off frequency {f}\\max of 340 GHz. At room temperature the measured carrier mobility (μ), sheet charge carrier density ({n}{{s}}) and breakdown voltage are 1580 cm2/(V \\cdot s), 1.9× {10}13 {{cm}}-2, and 10.7 V respectively. The superlatives of the proposed HEMTs are bewitching competitor or future sub-millimeter wave high power RF VLSI circuit applications.

The Plasma Interaction Experiment (PIX) description and test program. [electrometers

NASA Technical Reports Server (NTRS)

Ignaczak, L. R.; Haley, F. A.; Domino, E. J.; Culp, D. H.; Shaker, F. J.

1978-01-01

The plasma interaction experiment (PIX) is a battery powered preprogrammed auxiliary payload on the LANDSAT-C launch. This experiment is part of a larger program to investigate space plasma interactions with spacecraft surfaces and components. The varying plasma densities encountered during available telemetry coverage periods are deemed sufficient to determine first order interactions between the space plasma environment and the biased experimental surfaces. The specific objectives of the PIX flight experiment are to measure the plasma coupling current and the negative voltage breakdown characteristics of a solar array segment and a gold plated steel disk. Measurements will be made over a range of surface voltages up to plus or minus kilovolt. The orbital environment will provide a range of plasma densities. The experimental surfaces will be voltage biased in a preprogrammed step sequence to optimize the data returned for each plasma region and for the available telemetry coverage.

Lightning driven EMP in the upper atmosphere

NASA Technical Reports Server (NTRS)

Rowland, H. L.; Fernsler, R. F.; Huba, J. D.; Bernhardt, P. A.

1995-01-01

Large lightning discharges can drive electromagnetic pulses (EMP) that cause breakdown of the neutral atmosphere between 80 and 95 km leading to order of magnitude increases in the plasma density. The increase in the plasma density leads to increased reflection and absorption, and limits the pulse strength that propagates higher into the ionosphere.

Dielectric capacitors with three-dimensional nanoscale interdigital electrodes for energy storage.

PubMed

Han, Fangming; Meng, Guowen; Zhou, Fei; Song, Li; Li, Xinhua; Hu, Xiaoye; Zhu, Xiaoguang; Wu, Bing; Wei, Bingqing

2015-10-01

Dielectric capacitors are promising candidates for high-performance energy storage systems due to their high power density and increasing energy density. However, the traditional approach strategies to enhance the performance of dielectric capacitors cannot simultaneously achieve large capacitance and high breakdown voltage. We demonstrate that such limitations can be overcome by using a completely new three-dimensional (3D) nanoarchitectural electrode design. First, we fabricate a unique nanoporous anodic aluminum oxide (AAO) membrane with two sets of interdigitated and isolated straight nanopores opening toward opposite planar surfaces. By depositing carbon nanotubes in both sets of pores inside the AAO membrane, the new dielectric capacitor with 3D nanoscale interdigital electrodes is simply realized. In our new capacitors, the large specific surface area of AAO can provide large capacitance, whereas uniform pore walls and hemispheric barrier layers can enhance breakdown voltage. As a result, a high energy density of 2 Wh/kg, which is close to the value of a supercapacitor, can be achieved, showing promising potential in high-density electrical energy storage for various applications.

Dielectric capacitors with three-dimensional nanoscale interdigital electrodes for energy storage

PubMed Central

Han, Fangming; Meng, Guowen; Zhou, Fei; Song, Li; Li, Xinhua; Hu, Xiaoye; Zhu, Xiaoguang; Wu, Bing; Wei, Bingqing

2015-01-01

Dielectric capacitors are promising candidates for high-performance energy storage systems due to their high power density and increasing energy density. However, the traditional approach strategies to enhance the performance of dielectric capacitors cannot simultaneously achieve large capacitance and high breakdown voltage. We demonstrate that such limitations can be overcome by using a completely new three-dimensional (3D) nanoarchitectural electrode design. First, we fabricate a unique nanoporous anodic aluminum oxide (AAO) membrane with two sets of interdigitated and isolated straight nanopores opening toward opposite planar surfaces. By depositing carbon nanotubes in both sets of pores inside the AAO membrane, the new dielectric capacitor with 3D nanoscale interdigital electrodes is simply realized. In our new capacitors, the large specific surface area of AAO can provide large capacitance, whereas uniform pore walls and hemispheric barrier layers can enhance breakdown voltage. As a result, a high energy density of 2 Wh/kg, which is close to the value of a supercapacitor, can be achieved, showing promising potential in high-density electrical energy storage for various applications. PMID:26601294

Simulation study on the spatial and temporal characteristics of focused microwave beam discharge in nitrogen

NASA Astrophysics Data System (ADS)

Yang, Wei; Zhou, Qianhong; Dong, Zhiwei

2018-01-01

This paper reports a simulation study on a focused microwave (frequency 9.4 GHz, pulse width 2.5 μs, and peak electric field 1.2 kV/cm) discharge in 200 Pa nitrogen. A one-dimensional (1D) fluid model is based on the wave equation for the microwave field propagating through the gas breakdown plasma, the continuity equations for electron, ion and neutral particle densities, and the energy balance equations for mean electron temperature, and nitrogen vibrational and translational temperatures. These equations are numerically solved in a self-consistent manner with a simplified plasma chemistry set, in which the reaction rates involving electrons are calculated from the electron energy distribution function (EEDF) using a two-term expansion method. The spatial and temporal characteristics of the focused microwave breakdown in nitrogen are demonstrated, which include the amplitude of the microwave electric field, and the densities and temperatures of the plasma components. The temporal evolution of the plasma electron density agrees reasonably well with that measured with a microwave interferometer. The spatial-temporal distributions of metastable states are discussed on the plasma chemistry and the character of mean electron temperature. The spatially integrated N2(C3) density shows similar trends with the measured temporal intensity of optical emission spectroscopy, except for a time delay of 100-300 ns. The quantitative discrepancies are explained in light of limitations of the 1D model with a two-term expansion of EEDF. The theoretical model is found to describe the gas breakdown plasma generated by focused microwave beams at least qualitatively.

New Materials Developments for Military High Power Electronics and Capacitors

DTIC Science & Technology

2009-04-27

parameters, permittivity and breakdown field strength, and can be given by equation 1. (1) Where U - energy density (J/ cm3), ε - relative material... permittivity εo - permittivity of free space (8.85418782 × 10-12 m-3 kg-1 s4 A2) Emax (V/µm) - maximum field strength before material breakdown... Permittivity can be described as the ability of the material to polar- ize in response to an electric field through separation of ions, twist- ing permanent

Spectroscopic Feedback for High Density Data Storage and Micromachining

DOEpatents

Carr, Christopher W.; Demos, Stavros; Feit, Michael D.; Rubenchik, Alexander M.

2008-09-16

Optical breakdown by predetermined laser pulses in transparent dielectrics produces an ionized region of dense plasma confined within the bulk of the material. Such an ionized region is responsible for broadband radiation that accompanies a desired breakdown process. Spectroscopic monitoring of the accompanying light in real-time is utilized to ascertain the morphology of the radiated interaction volume. Such a method and apparatus as presented herein, provides commercial realization of rapid prototyping of optoelectronic devices, optical three-dimensional data storage devices, and waveguide writing.

Enhancing breakdown strength and energy storage performance of PVDF-based nanocomposites by adding exfoliated boron nitride

NASA Astrophysics Data System (ADS)

Xie, Yunchuan; Wang, Jian; Yu, Yangyang; Jiang, Wanrong; Zhang, Zhicheng

2018-05-01

Polymer/ceramic nanocomposites are promising dielectrics for high energy storage density (Ue) capacitors. However, their low breakdown strength (Eb) and high dielectric loss due to heterogeneous structure seriously limit their applications under high electric field. In this work, boron nitride nano-sheets (BNNS) exfoliated from BN particles were introduced into PVDF-based BaTiO3 (mBT) binary composites to reduce the dielectric loss and promote the Ue. The effects of BNNS on the dielectric properties, especially breakdown resistance, and energy storage performance of the resultant composites were carefully investigated by comparing with the composites without BNNS. The introduction of BNNS could significantly improve Eb and Ue of the final composites. Ternary composite with particle contents of 6 wt% BNNS and 5 wt% mBT presented a Eb of about 400 MV/m and Ue of 5.2 J/cm3, which is 40% and 30% superior to that of the binary composite with 5 wt% mBT, respectively. That may be attributed to the 2D structure, high bulk electrical resistivity, and fine dispersion in PVDF of BNNS, which is acting as an efficient insulating barrier against the leakage current and charges conduction. The depression effect of BNNS onto the charge mobility and the interfacial polarization of the polymer composites is finely addressed, which may offer a promising strategy for the fabrication of high-k polymer composites with low loss.

Investigation of dielectric breakdown in silica-epoxy nanocomposites using designed interfaces.

PubMed

Bell, Michael; Krentz, Timothy; Keith Nelson, J; Schadler, Linda; Wu, Ke; Breneman, Curt; Zhao, Su; Hillborg, Henrik; Benicewicz, Brian

2017-06-01

Adding nano-sized fillers to epoxy has proven to be an effective method for improving dielectric breakdown strength (DBS). Evidence suggests that dispersion state, as well as chemistry at the filler-matrix interface can play a crucial role in property enhancement. Herein we investigate the contribution of both filler dispersion and surface chemistry on the AC dielectric breakdown strength of silica-epoxy nanocomposites. Ligand engineering was used to synthesize bimodal ligands onto 15nm silica nanoparticles consisting of long epoxy compatible, poly(glycidyl methacrylate) (PGMA) chains, and short, π-conjugated, electroactive surface ligands. Surface initiated RAFT polymerization was used to synthesize multiple graft densities of PGMA chains, ultimately controlling the dispersion of the filler. Thiophene, anthracene, and terthiophene were employed as π-conjugated surface ligands that act as electron traps to mitigate avalanche breakdown. Investigation of the synthesized multifunctional nanoparticles was effective in defining the maximum particle spacing or free space length (L f ) that still leads to property enhancement, as well as giving insight into the effects of varying the electronic nature of the molecules at the interface on breakdown strength. Optimization of the investigated variables was shown to increase the AC dielectric breakdown strength of epoxy composites as much as 34% with only 2wt% silica loading. Copyright © 2017 Elsevier Inc. All rights reserved.

Heterojunction p-Cu2O/n-Ga2O3 diode with high breakdown voltage

NASA Astrophysics Data System (ADS)

Watahiki, Tatsuro; Yuda, Yohei; Furukawa, Akihiko; Yamamuka, Mikio; Takiguchi, Yuki; Miyajima, Shinsuke

2017-11-01

Heterojunction p-Cu2O/n-β-Ga2O3 diodes were fabricated on an epitaxially grown β-Ga2O3(001) layer. The reverse breakdown voltage of these p-n diodes reached 1.49 kV with a specific on-resistance of 8.2 mΩ cm2. The leakage current of the p-n diodes was lower than that of the Schottky barrier diode due to the higher barrier height against the electron. The ideality factor of the p-n diode was 1.31. It indicated that some portion of the recombination current at the interface contributed to the forward current, but the diffusion current was the dominant. The forward current more than 100 A/cm2 indicated the lower conduction band offset at the hetero-interface between Cu2O and Ga2O3 layers than that predicted from the bulk properties, resulting in such a high forward current without limitation. These results open the possibility of advanced device structures for wide bandgap Ga2O3 to achieve higher breakdown voltage and lower on-resistance.

Poly(vinylidene fluoride-co-hexafluoropropylene)-graft-poly(dopamine methacrylamide) copolymers: A nonlinear dielectric material for high energy density storage

NASA Astrophysics Data System (ADS)

Rahimabady, Mojtaba; Qun Xu, Li; Arabnejad, Saeid; Yao, Kui; Lu, Li; Shim, Victor P. W.; Gee Neoh, Koon; Kang, En-Tang

2013-12-01

A nonlinear dielectric poly(vinylidene fluoride-co-hexafluoropropylene)-graft-poly(dopamine methacrylamide) [P(VDF-HFP)-g-PDMA] graft copolymer with ultra-high energy density of 33 J/cm3 was obtained by thermally initiated radical graft polymerization. It was observed that the dielectric constant of the graft copolymer films was 63% higher than that of P(VDF-HFP), with a large dielectric breakdown strength (>850 MV/m). Theoretical analyses and experimental measurements showed that the significant improvement in the electric polarization was attributed to the introduction of the highly polarizable hydroxyl groups in the PDMA side chains, and the large breakdown strength arose from the strong adhesion bonding of the catechol-containing graft copolymer to the metal electrode.

Earthquake fracture energy inferred from kinematic rupture models on extended faults

USGS Publications Warehouse

Tinti, E.; Spudich, P.; Cocco, M.

2005-01-01

We estimate fracture energy on extended faults for several recent earthquakes by retrieving dynamic traction evolution at each point on the fault plane from slip history imaged by inverting ground motion waveforms. We define the breakdown work (Wb) as the excess of work over some minimum traction level achieved during slip. Wb is equivalent to "seismological" fracture energy (G) in previous investigations. Our numerical approach uses slip velocity as a boundary condition on the fault. We employ a three-dimensional finite difference algorithm to compute the dynamic traction evolution in the time domain during the earthquake rupture. We estimate Wb by calculating the scalar product between dynamic traction and slip velocity vectors. This approach does not require specifying a constitutive law and assuming dynamic traction to be collinear with slip velocity. If these vectors are not collinear, the inferred breakdown work depends on the initial traction level. We show that breakdown work depends on the square of slip. The spatial distribution of breakdown work in a single earthquake is strongly correlated with the slip distribution. Breakdown work density and its integral over the fault, breakdown energy, scale with seismic moment according to a power law (with exponent 0.59 and 1.18, respectively). Our estimates of breakdown work range between 4 ?? 105 and 2 ?? 107 J/m2 for earthquakes having moment magnitudes between 5.6 and 7.2. We also compare our inferred values with geologic surface energies. This comparison might suggest that breakdown work for large earthquakes goes primarily into heat production. Copyright 2005 by the American Geophysical Union.

Metal-oxide-semiconductor devices using Ga2O3 dielectrics on n-type GaN

NASA Astrophysics Data System (ADS)

Lee, Ching-Ting; Chen, Hong-Wei; Lee, Hsin-Ying

2003-06-01

Using a photoelectrochemical method involving a He-Cd laser, Ga2O3 oxide layers were directly grown on n-type GaN. We demonstrated the performance of the resultant metal-oxide-semiconductor devices based on the grown Ga2O3 layer. An extremely low reverse leakage current of 200 pA was achieved when devices operated at -20 V. Furthermore, high forward and reverse breakdown electric fields of 2.80 MV/cm and 5.70 MV/cm, respectively, were obtained. Using a photoassisted current-voltage method, a low interface state density of 2.53×1011 cm-2 eV-1 was estimated. The varactor devices permit formation of inversion layers, so that they may be applied for the fabrication of metal-oxide-semiconductor field-effect transistors.

Battery-Powered RF Pre-Ionization System for the Caltech Magnetohydrodynamically-Driven Jet Experiment: RF Discharge Properties and MHD-Driven Jet Dynamics

NASA Astrophysics Data System (ADS)

Chaplin, Vernon H.

This thesis describes investigations of two classes of laboratory plasmas with rather different properties: partially ionized low pressure radiofrequency (RF) discharges, and fully ionized high density magnetohydrodynamically (MHD)-driven jets. An RF pre-ionization system was developed to enable neutral gas breakdown at lower pressures and create hotter, faster jets in the Caltech MHD-Driven Jet Experiment. The RF plasma source used a custom pulsed 3 kW 13.56 MHz RF power amplifier that was powered by AA batteries, allowing it to safely float at 4-6 kV with the cathode of the jet experiment. The argon RF discharge equilibrium and transport properties were analyzed, and novel jet dynamics were observed. Although the RF plasma source was conceived as a wave-heated helicon source, scaling measurements and numerical modeling showed that inductive coupling was the dominant energy input mechanism. A one-dimensional time-dependent fluid model was developed to quantitatively explain the expansion of the pre-ionized plasma into the jet experiment chamber. The plasma transitioned from an ionizing phase with depressed neutral emission to a recombining phase with enhanced emission during the course of the experiment, causing fast camera images to be a poor indicator of the density distribution. Under certain conditions, the total visible and infrared brightness and the downstream ion density both increased after the RF power was turned off. The time-dependent emission patterns were used for an indirect measurement of the neutral gas pressure. The low-mass jets formed with the aid of the pre-ionization system were extremely narrow and collimated near the electrodes, with peak density exceeding that of jets created without pre-ionization. The initial neutral gas distribution prior to plasma breakdown was found to be critical in determining the ultimate jet structure. The visible radius of the dense central jet column was several times narrower than the axial current channel radius, suggesting that the outer portion of the jet must have been force free, with the current parallel to the magnetic field. The studies of non-equilibrium flows and plasma self-organization being carried out at Caltech are relevant to astrophysical jets and fusion energy research.

New phenomenology of gas breakdown in DC and RF fields

NASA Astrophysics Data System (ADS)

Petrović, Zoran Lj; Sivoš, Jelena; Savić, Marija; Škoro, Nikola; Radmilović Radenović, Marija; Malović, Gordana; Gocić, Saša; Marić, Dragana

2014-05-01

This paper follows a review lecture on the new developments in the field of gas breakdown and low current discharges, usually covered by a form of Townsend's theory and phenomenology. It gives an overview of a new approach to identifying which feedback agents provide breakdown, how to model gas discharge conditions and reconcile the results with binary experiments and how to employ that knowledge in modelling gas discharges. The next step is an illustration on how to record volt-ampere characteristics and use them on one hand to obtain the breakdown voltage and, on the other, to identify the regime of operation and model the secondary electron yields. The second aspect of this section concerns understanding the different regimes, their anatomy, how those are generated and how free running oscillations occur. While temporal development is the most useful and interesting part of the new developments, the difficulty of presenting the data in a written form precludes an easy publication and discussion. Thus, we shall only mention some of the results that stem from these measurements. Most micro discharges operate in DC albeit with complex geometries. Thus, parallel plate micro discharge measurements were needed to establish that Townsend's theory, with all its recent extensions, is still valid until some very small gaps. We have shown, for example, how a long-path breakdown puts in jeopardy many experimental observations and why a flat left-hand side of the Paschen curve often does not represent good physics. We will also summarize a kinetic representation of the RF breakdown revealing a somewhat more complex picture than the standard model. Finally, we will address briefly the breakdown in radially inhomogeneous conditions and how that affects the measured properties of the discharge. This review has the goal of summarizing (rather than developing details of) the current status of the low-current DC discharges formation and operation as a discipline which, in spite of its very long history, is developing rapidly.

Development and simulation study of a new inverse-pinch high Coulomb transfer switch

NASA Technical Reports Server (NTRS)

Choi, Sang H.

1989-01-01

The inverse-pinch plasma switch was studied using a computer simulation code. The code was based on a 2-D, 2-temperature magnetohydrodynamic (MHD) model. The application of this code was limited to the disk-type inverse-pinch plasma switch. The results of the computer analysis appear to be in agreement with the experimental results when the same parameters are used. An inverse-pinch plasma switch for closing has been designed and tested for high-power switching requirements. An azimuthally uniform initiation of breakdown is a key factor in achieving an inverse-pinch current path in the switch. Thus, various types of triggers, such as trigger pins, wire-brush, ring trigger, and hypocycloidal-pinch (HCP) devices have been tested for uniform breakdown. Recently, triggering was achieved by injection of a plasma-ring (plasma puff) that is produced separately with hypocycloidal-pinch electrodes placed under the cathode of the main gap. The current paths at switch closing, initiated by the injection of a plasma-ring from the HCP trigger are azimuthally uniform, and the local current density is significantly reduced, so that damage to the electrodes and the insulator surfaces is minimized. The test results indicate that electron bombardment on the electrodes and the insulator surfaces is minimized. The test results indicate that electron bombardment on the electrodes is four orders of magnitude less than that of a spark-gap switch for the same switching power. Indeed, a few thousand shots with peak current exceeding a mega-ampere and with hold-off voltage up to 20 kV have been conducted without showing measurable damage to the electrodes and insulators.

Temperature peaking at beginning of breakdown in 2.45 GHz pulsed off-resonance electron cyclotron resonance ion source hydrogen plasma

NASA Astrophysics Data System (ADS)

Cortázar, O. D.; Megía-Macías, A.; Vizcaíno-de-Julián, A.

2012-10-01

An experimental study of temperature and density evolution during breakdown in off-resonance ECR hydrogen plasma is presented. Under square 2.45 GHz microwave excitation pulses with a frequency of 50 Hz and relative high microwave power, unexpected transient temperature peaks that reach 18 eV during 20 μs are reported at very beginning of plasma breakdown. Decays of such peaks reach final stable temperatures of 5 eV at flat top microwave excitation pulse. Evidence of interplay between incoming power and duty cycle giving different kind of plasma parameters evolutions engaged to microwave coupling times is observed. Under relative high power conditions where short microwave coupling times are recorded, high temperature peaks are measured. However, for lower incoming powers and longer coupling times, temperature evolves gradually to a higher final temperature without peaking. On the other hand, the early instant where temperature peaks are observed also suggest a possible connection with preglow processes during breakdown in ECRIS plasmas.

On the Electronic Structure of Cu Chlorophyllin and Its Breakdown Products: A Carbon K-Edge X-ray Absorption Spectroscopy Study.

PubMed

Witte, Katharina; Mantouvalou, Ioanna; Sánchez-de-Armas, Rocío; Lokstein, Heiko; Lebendig-Kuhla, Janina; Jonas, Adrian; Roth, Friedrich; Kanngießer, Birgit; Stiel, Holger

2018-02-15

Using near-edge X-ray absorption fine structure (NEXAFS) spectroscopy, the carbon backbone of sodium copper chlorophyllin (SCC), a widely used chlorophyll derivative, and its breakdown products are analyzed to elucidate their electronic structure and physicochemical properties. Using various sample preparation methods and complementary spectroscopic methods (including UV/Vis, X-ray photoelectron spectroscopy), a comprehensive insight into the SCC breakdown process is presented. The experimental results are supported by density functional theory calculations, allowing a detailed assignment of characteristic NEXAFS features to specific C bonds. SCC can be seen as a model system for the large group of porphyrins; thus, this work provides a novel and detailed description of the electronic structure of the carbon backbone of those molecules and their breakdown products. The achieved results also promise prospective optical pump/X-ray probe investigations of dynamic processes in chlorophyll-containing photosynthetic complexes to be analyzed more precisely.

Enhanced spin transfer torque effect for transverse domain walls in cylindrical nanowires

NASA Astrophysics Data System (ADS)

Franchin, Matteo; Knittel, Andreas; Albert, Maximilian; Chernyshenko, Dmitri S.; Fischbacher, Thomas; Prabhakar, Anil; Fangohr, Hans

2011-09-01

Recent studies have predicted extraordinary properties for transverse domain walls in cylindrical nanowires: zero depinning current, the absence of the Walker breakdown, and applications as domain wall oscillators. In order to reliably control the domain wall motion, it is important to understand how they interact with pinning centers, which may be engineered, for example, through modulations in the nanowire geometry (such as notches or extrusions) or in the magnetic properties of the material. In this paper we study the motion and depinning of transverse domain walls through pinning centers in ferromagnetic cylindrical nanowires. We use (i) magnetic fields and (ii) spin-polarized currents to drive the domain walls along the wire. The pinning centers are modelled as a section of the nanowire which exhibits a uniaxial crystal anisotropy where the anisotropy easy axis and the wire axis enclose a variable angle θP. Using (i) magnetic fields, we find that the minimum and the maximum fields required to push the domain wall through the pinning center differ by 30%. On the contrary, using (ii) spin-polarized currents, we find variations of a factor 130 between the minimum value of the depinning current density (observed for θP=0∘, i.e., anisotropy axis pointing parallel to the wire axis) and the maximum value (for θP=90∘, i.e., anisotropy axis perpendicular to the wire axis). We study the depinning current density as a function of the height of the energy barrier of the pinning center using numerical and analytical methods. We find that for an industry standard energy barrier of 40kBT, a depinning current of about 5μA (corresponding to a current density of 6×1010A/m2 in a nanowire of 10nm diameter) is sufficient to depin the domain wall. We reveal and explain the mechanism that leads to these unusually low depinning currents. One requirement for this depinning mechanism is for the domain wall to be able to rotate around its own axis. With the right barrier design, the spin torque transfer term is acting exactly against the damping in the micromagnetic system, and thus the low current density is sufficient to accumulate enough energy quickly. These key insights may be crucial in furthering the development of novel memory technologies, such as the racetrack memory, that can be controlled through low current densities.

Interaction Of CO2 Laser Nanosecond Pulse Train With The Metallic Targets In Optical Breakdown Regime

NASA Astrophysics Data System (ADS)

Apollonov, V. V.; Firsov, K. N.; Konov, V. I.; Nikitin, P. I.; Prokhorov, A. M.; Silenok, A. S.; Sorochenko, V. R.

1986-11-01

In the present paper the electric field and currents in the air-breakdown plasma, produced by the train of nanosecond pulses of TEA-002 - regenerative amplifier near the un-charged targets are studied. The breakdown thresholds and the efficiency of plasma-target heat transmission are also measured. The results of numerical calculations made for increasing of the pulse train contrast with respect to the background in a regenerative amplifier are advanced.

Sensitivity of energy-packed compounds based on superfine and nanoporous silicon to pulsed electrical treatments

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zegrya, G. G.; Savenkov, G. G.; Morozov, V. A.

2017-04-15

The sensitivity of an energy-packed compound based on nanoporous silicon and calcium perchlorate to a high-current electron beam is studied. The initiation of explosive transformations in a mixture of potassium picrate with a highly dispersed powder of boron-doped silicon by means of a high-voltage discharge is examined. It is shown that explosive transformation modes (combustion and explosion) appear in the energy-packed compound under study upon its treatment with an electron beam. A relationship is established between the explosive transformation modes and the density of the energy-packed compound and between the breakdown (initiation) voltage and the mass fraction of the siliconmore » powder.« less

Leakage current conduction and reliability assessment of passivating thin silicon dioxide films on n-4H-SiC

NASA Astrophysics Data System (ADS)

Samanta, Piyas; Mandal, Krishna C.

2016-09-01

We have analyzed the mechanisms of leakage current conduction in passivating silicon dioxide (SiO2) films grown on (0 0 0 1) silicon (Si) face of n-type 4H-SiC (silicon carbide). It was observed that the experimentally measured gate current density in metal-oxide-silicon carbide (MOSiC) structures under positive gate bias at an oxide field Eox above 5 MV/cm is comprised of Fowler-Nordheim (FN) tunneling of electrons from the accumulated n-4H-SiC and Poole-Frenkel (PF) emission of trapped electrons from the localized neutral traps in the SiO2 gap, IFN and IPF, respectively at temperatures between 27 and 200 °C. In MOSiC structures, PF mechanism dominates FN tunneling of electrons from the accumulation layer of n-4H-SiC due to high density (up to 1013 cm-2) of carbon-related acceptor-like traps located at about 2.5 eV below the SiO2 conduction band (CB). These current conduction mechanisms were taken into account in studying hole injection/trapping into 10 nm-thick tunnel oxide on the Si face of 4H-SiC during electron injection from n-4H-SiC under high-field electrical stress with positive bias on the heavily doped n-type polysilicon (n+-polySi) gate at a wide range of temperatures between 27 and 200 °C. Holes were generated in the n+-polySi anode material by the hot-electrons during their transport through thin oxide films at oxide electric fields Eox from 5.6 to 8.0 MV/cm (prior to the intrinsic oxide breakdown field). Time-to-breakdown tBD of the gate dielectric was found to follow reciprocal field (1/E) model irrespective of stress temperatures. Despite the significant amount of process-induced interfacial electron traps contributing to a large amount of leakage current via PF emission in thermally grown SiO2 on the Si-face of n-4H-SiC, MOSiC devices having a 10 nm-thick SiO2 film can be safely used in 5 V TTL logic circuits over a period of 10 years.

Tiludronate

MedlinePlus

Tiludronate is used to treat Paget's disease of bone (a condition in which the bones are soft and weak and may be deformed, ... of medications called bisphosphonates. It works by preventing bone breakdown and increasing bone density (thickness).

Electrical breakdown and nanogap formation of indium oxide core/shell heterostructure nanowires.

PubMed

Jung, Minkyung; Song, Woon; Sung Lee, Joon; Kim, Nam; Kim, Jinhee; Park, Jeunghee; Lee, Hyoyoung; Hirakawa, Kazuhiko

2008-12-10

We report the electrical breakdown behavior and subsequent nanogap formation of In(2)O(3)/InO(x) core/shell heterostructure nanowires with substrate-supported and suspended structures. The radial heterostructure nanowires, composed of crystalline In(2)O(3) cores and amorphous In-rich shells, are grown by chemical vapor deposition. As the nanowires broke down, they exhibited two distinct current drops in the current-voltage characteristics. The tips of the broken nanowires were found to have a cone or a volcano shape depending on the width of the nanowire. The shape, the size, and the position of the nanogap depend strongly on the device structure and the nanowire dimensions. The substrate-supported and the suspended devices exhibit distinct breakdown behavior which can be explained by the diffusive thermal transport model. The breakdown temperature of the nanowire is estimated to be about 450 K, close to the melting temperature of indium. We demonstrated the usefulness of this technique by successful fabrication of working pentacene field-effect transistors.

Specific features of a single-pulse sliding discharge in neon near the threshold for spark breakdown

NASA Astrophysics Data System (ADS)

Trusov, K. K.

2017-08-01

Experimental data on the spatial structure of a single-pulse sliding discharge in neon at voltages below, equal to, and above the threshold for spark breakdown are discussed. The experiments were carried at gas pressures of 30 and 100 kPa and different polarities of the discharge voltage. Photographs of the plasma structure in two discharge chambers with different dimensions of the discharge zone and different thicknesses of an alumina dielectric plate on the surface of which the discharge develops are inspected. Common features of the prebreakdown discharge and its specific features depending on the voltage polarity and gas pressure are analyzed. It is shown that, at voltages below the threshold for spark breakdown, a low-current glow discharge with cathode and anode spots develops in the electrode gap. Above the breakdown threshold, regardless of the voltage polarity, spark channels directed from the cathode to the anode develop against the background of a low-current discharge.

Bismuth pyrochlore-based thin films for dielectric energy storage

NASA Astrophysics Data System (ADS)

Michael, Elizabeth K.

The drive towards the miniaturization of electronic devices has created a need for dielectric materials with large energy storage densities. These materials, which are used in capacitors, are a critical component in many electrical systems. Here, the development of dielectric energy storage materials for pulsed power applications, which require materials with the ability to accumulate a large amount of energy and then deliver it to the system rapidly, is explored. The amount of electrostatic energy that can be stored by a material is a function of the induced polarization and the dielectric breakdown strength of the material. An ideal energy storage dielectric would possess a high relative permittivity, high dielectric breakdown strength, and low loss tangent under high applied electric fields. The bismuth pyrochlores are a compositionally tunable family of materials that meet these requirements. Thin films of cubic pyrochlore bismuth zinc niobate, bismuth zinc tantalate, and bismuth zinc niobate tantalate, were fabricated using a novel solution chemistry based upon the Pechini method. This solution preparation is advantageous because it avoids the use of teratogenic solvents, such as 2-methoxyethanol. Crystalline films fabricated using this solution chemistry had very small grains that were approximately 27 nm in lateral size and 35 nm through the film thickness. Impedance measurements found that the resistivity of the grain boundaries was two orders of magnitude higher than the resistivity of the grain interior. The presence of many resistive grain boundaries impeded conduction through the films, resulting in high breakdown strengths for these materials. In addition to high breakdown strengths, this family of materials exhibited moderate relative permittivities of between 55 +/- 2 and 145 +/- 5, for bismuth zinc tantalate and bismuth zinc niobate, respectively, and low loss tangents on the order of 0.0008 +/- 0.0001. Increases in the concentration of the tantalum end member increased the dielectric breakdown strength. This combination of a high breakdown strength and a moderate permittivity led to a high discharged energy storage density for all film compositions. For example, at a measurement frequency of 10 kHz, bismuth zinc niobate exhibited a maximum recoverable energy storage density of 60.8 +/- 2.0 J/cm 3, while bismuth zinc tantalate exhibited a recoverable energy storage density of 60.7 +/- 2.0 J/cm3. Intermediate compositions of bismuth zinc niobate tantalate were explored to maximize the energy storage density of the substitutional solid solution. At an optimized concentration of ten mole percent tantalum, the maximum recoverable 10 kHz energy storage density was ˜66.9 +/- 2.4 J/cm3. These films of bismuth zinc niobate tantalate (Bi1.5Zn0.9Nb1.35Ta0.15O 6.9) sustained a maximum field of 5.5 MV/cm at 10 kHz, and demonstrated a relative permittivity of 122 +/- 4. The films maintained a high energy storage density above 20 J/cm3 though temperatures of 200°C. The second major objective of this work was to integrate complex oxides processed at temperatures below 350°C onto flexible polyimide substrates for potential use in flexible energy storage applications. Nanocomposite films consisting of a nanocrystalline fluorite related to delta-bismuth oxide in an amorphous matrix were prepared by reducing the citric acid concentration of the precursor solution, relative to the crystalline films. These solutions were batched with the composition Bi1.5Zn0.9Nb 1.35Ta0.15O6.9. The nanocomposite had a relative permittivity of 50 +/- 2 and dielectric losses on the order of 0.03 +/- 0.01. For measurement frequencies of 1 kHz and 10 kHz, the nanocomposite demonstrated a breakdown strength of 3.8 MV/cm, and a room-temperature energy storage density of approximately 40.2 +/- 1.7 J/cm3. To determine the suitability of the nanocomposite films for use in flexible applications, free-standing flexible nanocomposite films underwent repetitive compressive and tensile bending around a minimum bend diameter of 7 mm, which corresponded to a strain of 0.10%. After bending the films 30,000 times, the energy storage density of the films was unchanged, indicating that nanocomposite bismuth zinc niobate tantalate films may be suitable for flexible energy storage applications. To demonstrate the broader applicability of the nanocomposite approach to developing energy storage dielectrics at low processing temperatures, films of nanocomposite lead titanate, Pb1.1TiO3.1, were deposited using an inverted mixing order solution preparation, and annealed at a maximum temperature of 400°C. X-ray diffraction indicated the presence of nanocrystalline ordering, and transmission electron microscopy confirmed the nucleation of isolated nanocrystals of lead oxide in an amorphous lead titanate matrix. (Abstract shortened by UMI.).

Temperature dependent simulation of diamond depleted Schottky PIN diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hathwar, Raghuraj; Dutta, Maitreya; Chowdhury, Srabanti

2016-06-14

Diamond is considered as an ideal material for high field and high power devices due to its high breakdown field, high lightly doped carrier mobility, and high thermal conductivity. The modeling and simulation of diamond devices are therefore important to predict the performances of diamond based devices. In this context, we use Silvaco{sup ®} Atlas, a drift-diffusion based commercial software, to model diamond based power devices. The models used in Atlas were modified to account for both variable range and nearest neighbor hopping transport in the impurity bands associated with high activation energies for boron doped and phosphorus doped diamond.more » The models were fit to experimentally reported resistivity data over a wide range of doping concentrations and temperatures. We compare to recent data on depleted diamond Schottky PIN diodes demonstrating low turn-on voltages and high reverse breakdown voltages, which could be useful for high power rectifying applications due to the low turn-on voltage enabling high forward current densities. Three dimensional simulations of the depleted Schottky PIN diamond devices were performed and the results are verified with experimental data at different operating temperatures.« less

Qualitative and quantitative analysis of an additive element in metal oxide nanometer film using laser induced breakdown spectroscopy.

PubMed

Xiu, Junshan; Liu, Shiming; Sun, Meiling; Dong, Lili

2018-01-20

The photoelectric performance of metal ion-doped TiO 2 film will be improved with the changing of the compositions and concentrations of additive elements. In this work, the TiO 2 films doped with different Sn concentrations were obtained with the hydrothermal method. Qualitative and quantitative analysis of the Sn element in TiO 2 film was achieved with laser induced breakdown spectroscopy (LIBS) with the calibration curves plotted accordingly. The photoelectric characteristics of TiO 2 films doped with different Sn content were observed with UV visible absorption spectra and J-V curves. All results showed that Sn doping could improve the optical absorption to be red-shifted and advance the photoelectric properties of the TiO 2 films. We had obtained that when the concentration of Sn doping in TiO 2 films was 11.89  mmol/L, which was calculated by the LIBS calibration curves, the current density of the film was the largest, which indicated the best photoelectric performance. It indicated that LIBS was a potential and feasible measured method, which was applied to qualitative and quantitative analysis of the additive element in metal oxide nanometer film.

Effect of Organic Blocking Layer on the Energy Storage Characteristics of High-Permittivity Sol-Gel Thin Film Based on Neat 2-Cyanoethyltrimethoxysilane

NASA Astrophysics Data System (ADS)

Kim, Yunsang; Kathaperumal, Mohanalingam; Pan, Ming-Jen; Perry, Joseph

2014-03-01

Organic-inorganic hybrid sol-gel materials with polar groups that can undergo reorientational polarization provide a potential route to dielectric materials for energy storage. We have investigated the influence of nanoscale polymeric layer on dielectric and energy storage properties of 2-cyanoethyltrimethoxysilane (CNETMS) films. Two polymeric materials, fluoropolymer (CYTOP) and poly(p-phenylene oxide, PPO), are examined as potential materials to control charge injection from electrical contacts into CNETMS films by means of a potential barrier, whose width and height are defined by thickness and permittivity. Blocking layers ranging from 20 nm to 200 nm were deposited on CNETMS films by spin casting and subjected to thermal treatment. Polarization-electric field measurements show 30% increase in extractable energy density with PPO/CNETMS bilayers, relative to CNETMS alone, due to improved breakdown strength. Conduction current of the bilayers indicate that onset of charge conduction at high field is much delayed, which can be translated into effective suppression of charge injection and probability of breakdown events. The results will be discussed in regards to film morphology, field partitioning, width and height of potential barrier, charge trapping and loss of bilayers.

Pulsed—Laser Deposition Of Oxide Thin Films And Laser—Induced Breakdown Spectroscopy Of Multi—Element Materials

NASA Astrophysics Data System (ADS)

Pedarnig, Johannes D.

2010-10-01

New results of the Linz group on pulsed—laser deposition (PLD) of oxide thin films and on laser—induced breakdown spectroscopy (LIBS) of multi-element materials are reported. High-Tc superconducting (HTS) films with enhanced critical current density Jc are produced by laser ablation of novel nano-composite ceramic targets. The targets contain insulating nano-particles that are embedded into the YBa2Cu3O7 matrix. Epitaxial double-layers of lithium-doped and aluminum-doped ZnO are deposited on r-cut sapphire substrates. Acoustic over-modes in the GHz range are excited by piezoelectric actuation of layers. Smooth films of rare-earth doped glass are produced by F2—laser ablation. The transport properties of HTS thin films are modified by light—ion irradiation. Thin film nano—patterning is achieved by masked ion beam irradiation. LIBS is employed to analyze trace elements in industrial iron oxide powder and reference polymer materials. Various trace elements of ppm concentration are measured in the UV/VIS and vacuum-UV spectral range. Quantitative LIBS analysis of major components in oxide materials is performed by calibration-free methods.

Ferroelectric thin-film capacitors and piezoelectric switches for mobile communication applications.

PubMed

Klee, Mareike; van Esch, Harry; Keur, Wilco; Kumar, Biju; van Leuken-Peters, Linda; Liu, Jin; Mauczok, Rüdiger; Neumann, Kai; Reimann, Klaus; Renders, Christel; Roest, Aarnoud L; Tiggelman, Mark P J; de Wild, Marco; Wunnicke, Olaf; Zhao, Jing

2009-08-01

Thin-film ferroelectric capacitors have been integrated with resistors and active functions such as ESD protection into small, miniaturized modules, which enable a board space saving of up to 80%. With the optimum materials and processes, integrated capacitors with capacitance densities of up to 100 nF/mm2 for stacked capacitors combined with breakdown voltages of 90 V have been achieved. The integration of these high-density capacitors with extremely high breakdown voltage is a major accomplishment in the world of passive components and has not yet been reported for any other passive integration technology. Furthermore, thin-film tunable capacitors based on barium strontium titanate with high tuning range and high quality factor at 1 GHz have been demonstrated. Finally, piezoelectric thin films for piezoelectric switches with high switching speed have been realized.

42GHz ECRH assisted Plasma Breakdown in tokamak SST-1

NASA Astrophysics Data System (ADS)

Shukla, B. K.; Pradhan, S.; Patel, Paresh; Babu, Rajan; Patel, Jatin; Patel, Harshida; Dhorajia, Pragnesh; Tanna, V.; Atrey, P. K.; Manchanda, R.; Gupta, Manoj; Joisa, Shankar; Gupta, C. N.; Danial, Raju; Singh, Prashant; Jha, R.; Bora, D.

2015-03-01

In SST-1, 42GHz ECRH system has been commissioned to carry out breakdown and heating experiments at 0.75T and 1.5T operating toroidal magnetic fields. The 42GHz ECRH system consists of high power microwave source Gyrotron capable to deliver 500kW microwave power for 500ms duration, approximately 20 meter long transmission line and a mirror based launcher. The ECRH power in fundamental O-mode & second harmonic X-mode is launched from low field side (radial port) of the tokamak. At 0.75T operation, approximately 300 kW ECH power is launched in second harmonic X-mode and successful ECRH assisted breakdown is achieved at low loop_voltage ~ 3V. The ECRH power is launched around 45ms prior to loop voltage. The hydrogen pressure in tokamak is maintained ~ 1×10-5mbar and the pre-ionized density is ~ 4×1012/cc. At 1.5T operating toroidal magnetic field, the ECH power is launched in fundamental O-mode. The ECH power at fundamental harmonic is varied from 100 kW to 250 kW and successful breakdown is achieved in all ECRH shots. In fundamental harmonic there is no delay in breakdown while at second harmonic ~ 40ms delay is observed, which is normal in case of second harmonic ECRH assisted breakdown.

High Energy Density Cryogenic Capacitors

DTIC Science & Technology

2006-07-07

S Sublimation point - 10 -78 .50C at 1 atm gas (D Critical point CL Triple point 0.1 -5 6.6C at 5.11 atm 0.01 CO2 gas 0.001 -140 -120 -100 -80 -60...dramatically increase the dielectric breakdown stress in a polymer film is by reducing its temperature to 77K, the boiling point of liquid nitrogen at 1 bar...minimum, and maximum breakdown strengths measured in units of Volts per micron; and the final column is the number of data points taken on that

High-Voltage, High-Power Gaseous Electronics Switch For Electric Grid Power Conversion

NASA Astrophysics Data System (ADS)

Sommerer, Timothy J.

2014-05-01

We are developing a high-voltage, high-power gas switch for use in low-cost power conversion terminals on the electric power grid. Direct-current (dc) power transmission has many advantages over alternating current (ac) transmission, but at present the high cost of ac-dc power interconversion limits the use of dc. The gas switch we are developing conducts current through a magnetized cold cathode plasma in hydrogen or helium to reach practical current densities > 1 A/cm2. Thermal and sputter damage of the cathode by the incident ion flux is a major technical risk, and is being addressed through use of a ``self-healing'' liquid metal cathode (eg, gallium). Plasma conditions and cathode sputtering loss are estimated by analyzing plasma spectral emission. A particle-in-cell plasma model is used to understand various aspects of switch operation, including the conduction phase (where plasma densities can exceed 1013 cm-3), the switch-open phase (where the high-voltage must be held against gas breakdown on the left side of Paschen's curve), and the switching transitions (especially the opening process, which is initiated by forming an ion-matrix sheath adjacent to a control grid). The information, data, or work presented herein was funded in part by the Advanced Research Projects Agency-Energy (ARPA-E), U.S. Department of Energy, under Award Number DE-AR0000298.

Breakdowns in Coordination Between Air Traffic Controllers

NASA Technical Reports Server (NTRS)

Bearman, Chris; Orasanu, Judith; Miller, Ronald C.

2011-01-01

This talk outlines the complexity of coordination in air traffic control, introduces the NextGen technologies, identifies common causes for coordination breakdowns in air traffic control and examines whether these causes are likely to be reduced with the introduction of NextGen technologies. While some of the common causes of breakdowns will be reduced in a NextGen environment this conclusion should be drawn carefully given the current stage of development of the technologies and the observation that new technologies often shift problems rather than reduce them.

Subnanosecond breakdown development in high-voltage pulse discharge: Effect of secondary electron emission

NASA Astrophysics Data System (ADS)

Alexandrov, A. L.; Schweigert, I. V.; Zakrevskiy, Dm. E.; Bokhan, P. A.; Gugin, P.; Lavrukhin, M.

2017-10-01

A subnanosecond breakdown in high-voltage pulse discharge may be a key tool for superfast commutation of high power devices. The breakdown in high-voltage open discharge at mid-high pressure in helium was studied in experiment and in kinetic simulations. The kinetic model of electron avalanche development was constructed, based on PIC-MCC simulations, including dynamics of electrons, ions and fast helium atoms, produced by ions scattering. Special attention was paid to electron emission processes from cathode, such as: photoemission by Doppler-shifted resonant photons, produced in excitation processes involving fast atoms; electron emission by ions and fast atoms bombardment of cathode; the secondary electron emission (SEE) by hot electrons from bulk plasma. The simulations show that the fast atoms accumulation is the main reason of emission growth at the early stage of breakdown, but at the final stage, when the voltage on plasma gap diminishes, namely the SEE is responsible for subnanosecond rate of current growth. It was shown that the characteristic time of the current growth can be controlled by the SEE yield. The influence of SEE yield for three types of cathode material (titanium, SiC, and CuAlMg-alloy) was tested. By changing the pulse voltage amplitude and gas pressure, the area of existence of subnanosecond breakdown is identified. It is shown that in discharge with SiC and CuAlMg-alloy cathodes (which have enhanced SEE) the current can increase with a subnanosecond characteristic time value as small as τs = 0.4 ns, for the pulse voltage amplitude of 5÷12 kV. An increase of gas pressure from 15 Torr to 30 Torr essentially decreases the time of of current front growth, whereas the pulse voltage variation weakly affects the results.

Repetition rate dependency of low-density plasma effects during femtosecond-laser-based surgery of biological tissue

NASA Astrophysics Data System (ADS)

Kuetemeyer, K.; Baumgart, J.; Lubatschowski, H.; Heisterkamp, A.

2009-11-01

Femtosecond laser based nanosurgery of biological tissue is usually done in two different regimes. Depending on the application, low kHz repetition rates above the optical breakdown threshold or high MHz repetition rates in the low-density plasma regime are used. In contrast to the well understood optical breakdown, mechanisms leading to dissection below this threshold are not well known due to the complexity of chemical effects with high numbers of interacting molecules. Furthermore, the laser repetition rate may influence their efficiency. In this paper, we present our study on low-density plasma effects in biological tissue depending on repetition rate by static exposure of porcine corneal stroma to femtosecond pulses. We observed a continuous increase of the laser-induced damage with decreasing repetition rate over two orders of magnitude at constant numbers of applied laser pulses or constant laser pulse energies. Therefore, low repetition rates in the kHz regime are advantageous to minimize the total delivered energy to biological tissue during femtosecond laser irradiation. However, due to frequent excessive damage in this regime directly above the threshold, MHz repetition rates are preferable to create nanometer-sized cuts in the low-density plasma regime.

Rationally designed polyimides for high-energy density capacitor applications.

PubMed

Ma, Rui; Baldwin, Aaron F; Wang, Chenchen; Offenbach, Ido; Cakmak, Mukerrem; Ramprasad, Rampi; Sotzing, Gregory A

2014-07-09

Development of new dielectric materials is of great importance for a wide range of applications for modern electronics and electrical power systems. The state-of-the-art polymer dielectric is a biaxially oriented polypropylene (BOPP) film having a maximal energy density of 5 J/cm(3) and a high breakdown field of 700 MV/m, but with a limited dielectric constant (∼2.2) and a reduced breakdown strength above 85 °C. Great effort has been put into exploring other materials to fulfill the demand of continuous miniaturization and improved functionality. In this work, a series of polyimides were investigated as potential polymer materials for this application. Polyimide with high dielectric constants of up to 7.8 that exhibits low dissipation factors (<1%) and high energy density around 15 J/cm(3), which is 3 times that of BOPP, was prepared. Our syntheses were guided by high-throughput density functional theory calculations for rational design in terms of a high dielectric constant and band gap. Correlations of experimental and theoretical results through judicious variations of polyimide structures allowed for a clear demonstration of the relationship between chemical functionalities and dielectric properties.

Investigation of gate-diode degradation in normally-off p-GaN/AlGaN/GaN high-electron-mobility transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ťapajna, M., E-mail: milan.tapajna@savba.sk; Kuzmík, J.; Hilt, O.

2015-11-09

Gate diode conduction mechanisms were analyzed in normally-off p-GaN/AlGaN/GaN high-electron mobility transistors grown on Si wafers before and after forward bias stresses. Electrical characterization of the gate diodes indicates forward current to be limited by channel electrons injected through the AlGaN/p-GaN triangular barrier promoted by traps. On the other hand, reverse current was found to be consistent with carrier generation-recombination processes in the AlGaN layer. Soft breakdown observed after ∼10{sup 5 }s during forward bias stress at gate voltage of 7 V was attributed to formation of conductive channel in p-GaN/AlGaN gate stack via trap generation and percolation mechanism, likely due tomore » coexistence of high electric field and high forward current density. Possible enhancement of localized conductive channels originating from spatial inhomogeneities is proposed to be responsible for the degradation.« less

Quantitative Investigation of Room-Temperature Breakdown Effects in Pixelated TlBr Detectors

NASA Astrophysics Data System (ADS)

Koehler, Will; He, Zhong; Thrall, Crystal; O'Neal, Sean; Kim, Hadong; Cirignano, Leonard; Shah, Kanai

2014-10-01

Due to favorable material properties such as high atomic number (Tl: 81, Br: 35), high density ( 7.56 g/cm3), and a wide band gap (2.68 eV), thallium-bromide (TlBr) is currently under investigation for use as an alternative room-temperature semiconductor gamma-ray spectrometer. TlBr detectors can achieve less than 1% FWHM energy resolution at 662 keV, but these results are limited to stable operation at - 20°C. After days to months of room-temperature operation, ionic conduction causes these devices to fail. This work correlates the varying leakage current with alpha-particle and gamma-ray spectroscopic performances at various operating temperatures. Depth-dependent photopeak centroids exhibit time-dependent transient behavior, which indicates trapping sites form near the anode surface during room-temperature operation. After refabrication, similar performance and functionality of failed detectors returned.

A novel high-performance high-frequency SOI MESFET by the damped electric field

NASA Astrophysics Data System (ADS)

Orouji, Ali A.; Khayatian, Ahmad; Keshavarzi, Parviz

2016-06-01

In this paper, we introduce a novel silicon-on-insulator (SOI) metal-semiconductor field-effect-transistor (MESFET) using the damped electric field (DEF). The proposed structure is geometrically symmetric and compatible with common SOI CMOS fabrication processes. It has two additional oxide regions under the side gates in order to improve DC and RF characteristics of the DEF structure due to changes in the electrical potential, the electrical field distributions, and rearrangement of the charge carriers. Improvement of device performance is investigated by two-dimensional and two-carrier simulation of fundamental parameters such as breakdown voltage (VBR), drain current (ID), output power density (Pmax), transconductance (gm), gate-drain and gate-source capacitances, cut-off frequency (fT), unilateral power gain (U), current gain (h21), maximum available gain (MAG), and minimum noise figure (Fmin). The results show that proposed structure operates with higher performances in comparison with the similar conventional SOI structure.

Application of microbial electrolysis cells to treat spent yeast from an alcoholic fermentation.

PubMed

Sosa-Hernández, Ornella; Popat, Sudeep C; Parameswaran, Prathap; Alemán-Nava, Gibrán Sidney; Torres, César I; Buitrón, Germán; Parra-Saldívar, Roberto

2016-01-01

Spent yeast (SY), a major challenge for the brewing industry, was treated using a microbial electrolysis cell to recover energy. Concentrations of SY from bench alcoholic fermentation and ethanol were tested, ranging from 750 to 1500mgCOD/L and 0 to 2400mgCOD/L respectively. COD removal efficiency (RE), coulombic efficiency (CE), coulombic recovery (CR), hydrogen production and current density were evaluated. The best treatment condition was 750mgCOD/LSY+1200mgCOD/L ethanol giving higher COD RE, CE, CR (90±1%, 90±2% and 81±1% respectively), as compared with 1500mgCOD/LSY (76±2%, 63±7% and 48±4% respectively); ethanol addition was significantly favorable (p value=0.011), possibly due to electron availability and SY autolysis. 1500mgCOD/LSY+1200mgCOD/L ethanol achieved higher current density (222.0±31.3A/m(3)) and hydrogen production (2.18±0.66 [Formula: see text] ) but with lower efficiencies (87±2% COD RE, 71.0±.4% CE). Future work should focus on electron sinks, acclimation and optimizing SY breakdown. Copyright © 2015 The Authors. Published by Elsevier Ltd.. All rights reserved.

Time-dependent one-dimensional simulation of atmospheric dielectric barrier discharge in N2/O2/H2O using COMSOL Multiphysics

NASA Astrophysics Data System (ADS)

Sohbatzadeh, F.; Soltani, H.

2018-04-01

The results of time-dependent one-dimensional modelling of a dielectric barrier discharge (DBD) in a nitrogen-oxygen-water vapor mixture at atmospheric pressure are presented. The voltage-current characteristics curves and the production of active species are studied. The discharge is driven by a sinusoidal alternating high voltage-power supply at 30 kV with frequency of 27 kHz. The electrodes and the dielectric are assumed to be copper and quartz, respectively. The current discharge consists of an electrical breakdown that occurs in each half-period. A detailed description of the electron attachment and detachment processes, surface charge accumulation, charged species recombination, conversion of negative and positive ions, ion production and losses, excitations and dissociations of molecules are taken into account. Time-dependent one-dimensional electron density, electric field, electric potential, electron temperature, densities of reactive oxygen species (ROS) and reactive nitrogen species (RNS) such as: O, O-, O+, {O}2^{ - } , {O}2^{ + } , O3, {N}, {N}2^{ + } , N2s and {N}2^{ - } are simulated versus time across the gas gap. The results of this work could be used in plasma-based pollutant degradation devices.

Hydrothermal Barium Titanate Thin-Film Characteristics and their Suitability as Decoupling Capacitors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Raj, P. Markondeya; Lee, Baik-Woo; Kang, Nam-Kee

System integration and miniaturization demands are driving integrated thin film capacitor technologies towards ultrahigh capacitance densities for noise-free power supply, power conversion and efficient power management. Hydrothermal route can deposit crystalline ferroelectric films at low temperatures of less than 150 C. It is hence an attractive route for integrating high permittivity thin film capacitors on organic, silicon or flex substrates. However, hydrothermal films are not commercialized so far because of their inferior insulation characteristics. Embedded hydroxyl groups are attributed to be the cause for high leakage currents, temperature dependent properties and lower Breakdown Voltages (BDVs). This paper discusses the dielectricmore » characteristics such as capacitance density, leakage currents and Temperature Coefficient of Capacitance (TCC) of hydrothermal barium titanate films and correlates them to the embedded water and OH groups, film morphology, stoichiometry and crystallinity. With thermal treatment, majority of the OH groups can be removed leading to improved insulation characteristics. The room temperature I-V characteristics agreed with ionic conduction models for films baked at 160 C while higher baking temperatures of above 300 C resulted in Poole-Frenkel type conduction. A brief perspective is provided on the suitability of hydrothermal thin film capacitors for power supply applications.« less

A Simple Method for High-Performance, Solution-Processed, Amorphous ZrO2 Gate Insulator TFT with a High Concentration Precursor

PubMed Central

Cai, Wei; Zhu, Zhennan; Wei, Jinglin; Fang, Zhiqiang; Zheng, Zeke; Zhou, Shangxiong; Peng, Junbiao; Lu, Xubing

2017-01-01

Solution-processed high-k dielectric TFTs attract much attention since they cost relatively little and have a simple fabrication process. However, it is still a challenge to reduce the leakage of the current density of solution-processed dielectric TFTs. Here, a simple solution method is presented towards enhanced performance of ZrO2 films by intentionally increasing the concentration of precursor. The ZrO2 films not only exhibit a low leakage current density of 10−6 A/cm2 at 10 V and a breakdown field of 2.5 MV/cm, but also demonstrate a saturation mobility of 12.6 cm2·V−1·s−1 and a Ion/Ioff ratio of 106 in DC pulse sputtering IGZO-TFTs based on these films. Moreover, the underlying mechanism of influence of precursor concentration on film formation is presented. Higher concentration precursor results in a thicker film within same coating times with reduced ZrO2/IGZO interface defects and roughness. It shows the importance of thickness, roughness, and annealing temperature in solution-processed dielectric oxide TFT and provides an approach to precisely control solution-processed oxide films thickness. PMID:28825652

A Simple Method for High-Performance, Solution-Processed, Amorphous ZrO₂ Gate Insulator TFT with a High Concentration Precursor.

PubMed

Cai, Wei; Zhu, Zhennan; Wei, Jinglin; Fang, Zhiqiang; Ning, Honglong; Zheng, Zeke; Zhou, Shangxiong; Yao, Rihui; Peng, Junbiao; Lu, Xubing

2017-08-21

Solution-processed high-k dielectric TFTs attract much attention since they cost relatively little and have a simple fabrication process. However, it is still a challenge to reduce the leakage of the current density of solution-processed dielectric TFTs. Here, a simple solution method is presented towards enhanced performance of ZrO₂ films by intentionally increasing the concentration of precursor. The ZrO₂ films not only exhibit a low leakage current density of 10 -6 A/cm² at 10 V and a breakdown field of 2.5 MV/cm, but also demonstrate a saturation mobility of 12.6 cm²·V -1 ·s -1 and a I on /I off ratio of 10⁶ in DC pulse sputtering IGZO-TFTs based on these films. Moreover, the underlying mechanism of influence of precursor concentration on film formation is presented. Higher concentration precursor results in a thicker film within same coating times with reduced ZrO₂/IGZO interface defects and roughness. It shows the importance of thickness, roughness, and annealing temperature in solution-processed dielectric oxide TFT and provides an approach to precisely control solution-processed oxide films thickness.

High breakdown voltage quasi-two-dimensional β-Ga2O3 field-effect transistors with a boron nitride field plate

NASA Astrophysics Data System (ADS)

Bae, Jinho; Kim, Hyoung Woo; Kang, In Ho; Yang, Gwangseok; Kim, Jihyun

2018-03-01

We have demonstrated a β-Ga2O3 metal-semiconductor field-effect transistor (MESFET) with a high off-state breakdown voltage (344 V), based on a quasi-two-dimensional β-Ga2O3 field-plated with hexagonal boron nitride (h-BN). Both the β-Ga2O3 and h-BN were mechanically exfoliated from their respective crystal substrates, followed by dry-transfer onto a SiO2/Si substrate for integration into a high breakdown voltage quasi-two-dimensional β-Ga2O3 MESFETs. N-type conducting behavior was observed in the fabricated β-Ga2O3 MESFETs, along with a high on/off current ratio (>106) and excellent current saturation. A three-terminal off-state breakdown voltage of 344 V was obtained, with a threshold voltage of -7.3 V and a subthreshold swing of 84.6 mV/dec. The distribution of electric fields in the quasi-two-dimensional β-Ga2O3 MESFETs was simulated to analyze the role of the dielectric h-BN field plate in improving the off-state breakdown voltage. The stability of the field-plated β-Ga2O3 MESFET in air was confirmed after storing the MESFET in ambient air for one month. Our results pave the way for unlocking the full potential of β-Ga2O3 for use in a high-power nano-device with an ultrahigh breakdown voltage.

Large exchange-dominated domain wall velocities in antiferromagnetically coupled nanowires

NASA Astrophysics Data System (ADS)

Kuteifan, Majd; Lubarda, M. V.; Fu, S.; Chang, R.; Escobar, M. A.; Mangin, S.; Fullerton, E. E.; Lomakin, V.

2016-04-01

Magnetic nanowires supporting field- and current-driven domain wall motion are envisioned for methods of information storage and processing. A major obstacle for their practical use is the domain-wall velocity, which is traditionally limited for low fields and currents due to the Walker breakdown occurring when the driving component reaches a critical threshold value. We show through numerical and analytical modeling that the Walker breakdown limit can be extended or completely eliminated in antiferromagnetically coupled magnetic nanowires. These coupled nanowires allow for large domain-wall velocities driven by field and/or current as compared to conventional nanowires.

Simulation study on nitrogen vibrational and translational temperature in air breakdown plasma generated by 110 GHz focused microwave pulse

NASA Astrophysics Data System (ADS)

Yang, Wei; Zhou, Qianhong; Dong, Zhiwei

2017-01-01

We report a simulation study on nitrogen vibrational and translational temperature in 3 μs pulse 110 GHz microwave air breakdown at pressure from 1 Torr to 100 Torr. The one-dimensional model is based on a self-consistent solution to Helmholtz equation for microwave field, electron density equation, and the average energy equation for electrons, nitrogen vibrational, and translational degrees. The breakdown threshold is calculated from the transmitted microwave profile, and it agrees well with that from experiment. The spatio-temporal characteristics of vibrational and translational temperature are shown, and the peak values at the end of pulse are compared to the results fitted from optical emission spectroscopy. The dependences of vibrational and translational temperature on normalized microwave fields and gas pressure are investigated, and the underlying mechanisms are unveiled.

The use of wooden sticks to assess stream ecosystem functioning: comparison with leaf breakdown rates.

PubMed

Arroita, Maite; Aristi, Ibon; Flores, Lorea; Larrañaga, Aitor; Díez, Joserra; Mora, Juanita; Romaní, Anna M; Elosegi, Arturo

2012-12-01

Breakdown of organic matter is a key process in streams and rivers, and thus, it has potential to assess functional impairment of river ecosystems. Because the litter-bag method commonly used to measure leaf breakdown is time consuming and expensive, several authors proposed to measure breakdown of wooden sticks instead. Nevertheless, currently there is little information on the performance of wooden sticks versus that of leaves. We compared the breakdown of tongue depressors made of untreated poplar wood, to that of six common leaf species in two large streams in the Basque Country (northern Spain), one polluted and the other unpolluted. Breakdown rates ranged from 0.0011 to 0.0120 day(-1), and were significantly lower in the polluted stream. Wooden sticks performed very similarly to leaves, but were less affected by flood-induced physical abrasion. The ranking of the materials according to their breakdown rate was consistent, irrespective of the stream. The experiments with leaves were 10 times more costly for breakdown rate, 4 times if we include the rest of the variables measured. Therefore wooden sticks offer a promising tool to assess river ecosystem functioning, although more research is necessary to define the thresholds for ecosystem functional impairment. Copyright © 2012 Elsevier B.V. All rights reserved.

Numerical Study on Alternating Current Breakdown Mechanism Between Sphere-Sphere Electrodes in Transformer Oil-Based Magnetic Nanofluids.

PubMed

Lee, Won-Ho; Lee, Jong-Chul

2018-09-01

A numerical simulation was developed for magnetic nanoparticles in a liquid dielectric to investigate the AC breakdown voltage of the magnetic nanofluids according to the volume concentration of the magnetic nanoparticles. In prior research, we found that the dielectric breakdown voltage of the transformer oil-based magnetic nanofluids was positively or negatively affected according to the amount of magnetic nanoparticles under a testing condition of dielectric fluids, and the trajectory of the magnetic nanoparticles in a fabricated chip was visualized to verify the related phenomena via measurements and computations. In this study, a numerical simulation of magnetic nanoparticles in an insulating fluid was developed to model particle tracing for AC breakdown mechanisms happened to a sphere-sphere electrode configuration and to propose a possible mechanism regarding the change in the breakdown strength due to the behavior of the magnetic nanoparticles with different applied voltages.

Crowding of Interacting Fluid Particles in Porous Media through Molecular Dynamics: Breakdown of Universality for Soft Interactions.

PubMed

Schnyder, Simon K; Horbach, Jürgen

2018-02-16

Molecular dynamics simulations of interacting soft disks confined in a heterogeneous quenched matrix of soft obstacles show dynamics which is fundamentally different from that of hard disks. The interactions between the disks can enhance transport when their density is increased, as disks cooperatively help each other over the finite energy barriers in the matrix. The system exhibits a transition from a diffusive to a localized state, but the transition is strongly rounded. Effective exponents in the mean-squared displacement can be observed over three decades in time but depend on the density of the disks and do not correspond to asymptotic behavior in the vicinity of a critical point, thus, showing that it is incorrect to relate them to the critical exponents in the Lorentz model scenario. The soft interactions are, therefore, responsible for a breakdown of the universality of the dynamics.

Crowding of Interacting Fluid Particles in Porous Media through Molecular Dynamics: Breakdown of Universality for Soft Interactions

NASA Astrophysics Data System (ADS)

Schnyder, Simon K.; Horbach, Jürgen

2018-02-01

Molecular dynamics simulations of interacting soft disks confined in a heterogeneous quenched matrix of soft obstacles show dynamics which is fundamentally different from that of hard disks. The interactions between the disks can enhance transport when their density is increased, as disks cooperatively help each other over the finite energy barriers in the matrix. The system exhibits a transition from a diffusive to a localized state, but the transition is strongly rounded. Effective exponents in the mean-squared displacement can be observed over three decades in time but depend on the density of the disks and do not correspond to asymptotic behavior in the vicinity of a critical point, thus, showing that it is incorrect to relate them to the critical exponents in the Lorentz model scenario. The soft interactions are, therefore, responsible for a breakdown of the universality of the dynamics.

High energy density in PVDF nanocomposites using an optimized nanowire array.

PubMed

Guo, Ru; Luo, Hang; Liu, Weiwei; Zhou, Xuefan; Tang, Lin; Zhou, Kechao; Zhang, Dou

2018-06-22

TiO2 nanowire arrays are often utilized to prepare high performance polymer nanocomposites, however, the contribution to the energy density is limited due to their non-ferroelectric characteristics. A nanocomposite with an optimized nanowire array combining the ferroelectric properties of lead zirconate titanate (PZT) with TiO2, readily forming nanowires (denoted as a TiO2-P nanowire array), is prepared to enhance the permittivity. Poly(vinylidene fluoride) (PVDF) is used as the polymer matrix due to its high breakdown strength, e.g. 600-700 kV mm-1. As a result, the permittivity and breakdown electric field reach 53 at 1 kHz and 550 kV mm-1, respectively. Therefore, the nanocomposites achieve a higher discharge energy density of 12.4 J cm-3 with excellent cycle stability, which is the highest among nanocomposites based on a nanowire array as a filler in a PVDF matrix. This work provides not only a feasible approach to obtain high performance dielectric nanocomposites, but also a wide range of potential applications in the energy storage and energy harvesting fields.

A meta-analysis of sex differences in human brain structure☆

PubMed Central

Ruigrok, Amber N.V.; Salimi-Khorshidi, Gholamreza; Lai, Meng-Chuan; Baron-Cohen, Simon; Lombardo, Michael V.; Tait, Roger J.; Suckling, John

2014-01-01

The prevalence, age of onset, and symptomatology of many neuropsychiatric conditions differ between males and females. To understand the causes and consequences of sex differences it is important to establish where they occur in the human brain. We report the first meta-analysis of typical sex differences on global brain volume, a descriptive account of the breakdown of studies of each compartmental volume by six age categories, and whole-brain voxel-wise meta-analyses on brain volume and density. Gaussian-process regression coordinate-based meta-analysis was used to examine sex differences in voxel-based regional volume and density. On average, males have larger total brain volumes than females. Examination of the breakdown of studies providing total volumes by age categories indicated a bias towards the 18–59 year-old category. Regional sex differences in volume and tissue density include the amygdala, hippocampus and insula, areas known to be implicated in sex-biased neuropsychiatric conditions. Together, these results suggest candidate regions for investigating the asymmetric effect that sex has on the developing brain, and for understanding sex-biased neurological and psychiatric conditions. PMID:24374381

Gas Composition Sensing Using Carbon Nanotube Arrays

NASA Technical Reports Server (NTRS)

Li, Jing; Meyyappan, Meyya

2012-01-01

This innovation is a lightweight, small sensor for inert gases that consumes a relatively small amount of power and provides measurements that are as accurate as conventional approaches. The sensing approach is based on generating an electrical discharge and measuring the specific gas breakdown voltage associated with each gas present in a sample. An array of carbon nanotubes (CNTs) in a substrate is connected to a variable-pulse voltage source. The CNT tips are spaced appropriately from the second electrode maintained at a constant voltage. A sequence of voltage pulses is applied and a pulse discharge breakdown threshold voltage is estimated for one or more gas components, from an analysis of the current-voltage characteristics. Each estimated pulse discharge breakdown threshold voltage is compared with known threshold voltages for candidate gas components to estimate whether at least one candidate gas component is present in the gas. The procedure can be repeated at higher pulse voltages to estimate a pulse discharge breakdown threshold voltage for a second component present in the gas. The CNTs in the gas sensor have a sharp (low radius of curvature) tip; they are preferably multi-wall carbon nanotubes (MWCNTs) or carbon nanofibers (CNFs), to generate high-strength electrical fields adjacent to the tips for breakdown of the gas components with lower voltage application and generation of high current. The sensor system can provide a high-sensitivity, low-power-consumption tool that is very specific for identification of one or more gas components. The sensor can be multiplexed to measure current from multiple CNT arrays for simultaneous detection of several gas components.

Impact of oxygen precursor flow on the forward bias behavior of MOCVD-Al2O3 dielectrics grown on GaN

NASA Astrophysics Data System (ADS)

Chan, Silvia H.; Bisi, Davide; Liu, Xiang; Yeluri, Ramya; Tahhan, Maher; Keller, Stacia; DenBaars, Steven P.; Meneghini, Matteo; Mishra, Umesh K.

2017-11-01

This paper investigates the effects of the oxygen precursor flow supplied during metalorganic chemical vapor deposition (MOCVD) of Al2O3 films on the forward bias behavior of Al2O3/GaN metal-oxide-semiconductor capacitors. The low oxygen flow (100 sccm) delivered during the in situ growth of Al2O3 on GaN resulted in films that exhibited a stable capacitance under forward stress, a lower density of stress-generated negative fixed charges, and a higher dielectric breakdown strength compared to Al2O3 films grown under high oxygen flow (480 sccm). The low oxygen grown Al2O3 dielectrics exhibited lower gate current transients in stress/recovery measurements, providing evidence of a reduced density of trap states near the GaN conduction band and an enhanced robustness under accumulated gate stress. This work reveals oxygen flow variance in MOCVD to be a strategy for controlling the dielectric properties and performance.

Origin of large dark current increase in InGaAs/InP avalanche photodiode

NASA Astrophysics Data System (ADS)

Wen, J.; Wang, W. J.; Chen, X. R.; Li, N.; Chen, X. S.; Lu, W.

2018-04-01

The large dark current increase near the breakdown voltage of an InGaAs/InP avalanche photodiode is observed and analyzed from the aspect of bulk defects in the device materials. The trap level information is extracted from the temperature-dependent electrical characteristics of the device and the low temperature photoluminescence spectrum of the materials. Simulation results with the extracted trap level taken into consideration show that the trap is in the InP multiplication layer and the trap assisted tunneling current induced by the trap is the main cause of the large dark current increase with the bias from the punch-through voltage to 95% breakdown voltage.

Alternating current breakdown voltage of ice electret

NASA Astrophysics Data System (ADS)

Oshika, Y.; Tsuchiya, Y.; Okumura, T.; Muramoto, Y.

2017-09-01

Ice has low environmental impact. Our research objectives are to study the availability of ice as a dielectric insulating material at cryogenic temperatures. We focus on ferroelectric ice (iceXI) at cryogenic temperatures. The properties of iceXI, including its formation, are not clear. We attempted to obtain the polarized ice that was similar to iceXI under the applied voltage and cooling to 77 K. The polarized ice have a wide range of engineering applications as electronic materials at cryogenic temperatures. This polarized ice is called ice electret. The structural difference between ice electret and normal ice is only the positions of protons. The effects of the proton arrangement on the breakdown voltage of ice electret were shown because electrical properties are influenced by the structure of ice. We observed an alternating current (ac) breakdown voltage of ice electret and normal ice at 77 K. The mean and minimum ac breakdown voltage values of ice electret were higher than those of normal ice. We considered that the electrically weak part of the normal ice was improved by applied a direct electric field.

Characterization of plasma processing induced charging damage to MOS devices

NASA Astrophysics Data System (ADS)

Ma, Shawming

1997-12-01

Plasma processing has become an integral part of the fabrication of integrated circuits and takes at least 30% of whole process steps since it offers advantages in terms of directionality, low temperature and process convenience. However, wafer charging during plasma processes is a significant concern for both thin oxide damage and profile distortion. In this work, the factors affecting this damage will be explained by plasma issues, device structure and oxide quality. The SPORT (Stanford Plasma On-wafer Real Time) charging probe was developed to investigate the charging mechanism of different plasma processes including poly-Si etching, resist ashing and PECVD. The basic idea of this probe is that it simulates a real device structure in the plasma environment and allows measurement of plasma induced charging voltages and currents directly in real time. This measurement is fully compatible with other charging voltage measurement but it is the only one to do in real-time. Effect of magnetic field induced plasma nonuniformity on spatial dependent charging is well understood by this measurement. In addition, the plasma parameters including ion current density and electron temperature can also be extracted from the probe's plasma I-V characteristics using a dc Langmuir probe like theory. It will be shown that the MOS device tunneling current from charging, the dependence on antenna ratio and the etch uniformity can all be predicted by using this measurement. Moreover, the real-time measurement reveals transient and electrode edge effect during processing. Furthermore, high aspect ratio pattern induced electron shading effects can also be characterized by the probe. On the oxide quality issue, wafer temperature during plasma processing has been experimentally shown to be critical to charging damage. Finally, different MOS capacitor testing methods including breakdown voltage, charge-to-breakdown, gate leakage current and voltage-time at constant current bias were compared to find the optimum method for charging device reliability testing.

Peculiarities of the Short-Pulse Dielectric Strength of Vacuum Insulation

NASA Astrophysics Data System (ADS)

Nefedtsev, E. V.; Onischenko, S. A.; Batrakov, A. V.

2017-12-01

Results of a study of the short-pulse dielectric strength of millimeter plane vacuum gaps with electrodes that have been treated with an electron beam are presented. It is shown that the electric field strength of the first breakdown of vacuum gaps with pure metal electrodes is determined to a significant extent by the crystal structure of the metal. The development of the first short-pulse breakdown is accompanied by a very abrupt growth of the electric current. The short duration of the test pulses rules out the influence of all well-known inertial mechanisms of breakdown with characteristic action times greater than 20 ns. Some general assumptions regarding the nature of the factors stimulating the short-pulse breakdown of vacuum gaps are considered.

LOW TEMPERATURE EFFECTS ON HIGH VOLTAGE BREAKDOWN AT SMALL GAPS. PART I

DOE Office of Scientific and Technical Information (OSTI.GOV)

DeGeeter, D.J.

1962-05-16

Experiments were performed that examined the effect of electrode cooling on breakdown. Cooling the cathode to liquid N/sub 2/ temperature reduced the d-c electron current, thereby increasing the voltage breakdown value. Tests involving cooling of only one electrode indicated that only the cathode was affected. Cooling was found to be of probable value if the flaking problem were removed when the cathode has a high field region. The data indicated that breakdown would not necessarily be improved for all electrode geometries, especially when the data do not approach the Trump-Van de Graaff curve against which the data were plotted. Effectsmore » of electrode polishing and outgassing were also studied. (D.C.W.)« less

Effects of Interphase Modification and Biaxial Orientation on Dielectric Properties of Poly(ethylene terephthalate)/Poly(vinylidene fluoride-co-hexafluoropropylene) Multilayer Films.

PubMed

Yin, Kezhen; Zhou, Zheng; Schuele, Donald E; Wolak, Mason; Zhu, Lei; Baer, Eric

2016-06-01

Recently, poly(vinylidene fluoride) (PVDF)-based multilayer films have demonstrated enhanced dielectric properties, combining high energy density and high dielectric breakdown strength from the component polymers. In this work, further enhanced dielectric properties were achieved through interface/interphase modulation and biaxial orientation for the poly(ethylene terephthalate)/poly(methyl methacrylate)/poly(vinylidene fluoride-co-hexafluoropropylene) [PET/PMMA/P(VDF-HFP)] three-component multilayer films. Because PMMA is miscible with P(VDF-HFP) and compatible with PET, the interfacial adhesion between PET and P(VDF-HFP) layers should be improved. Biaxial stretching of the as-extruded multilayer films induced formation of highly oriented fibrillar crystals in both P(VDF-HFP) and PET, resulting in improved dielectric properties with respect to the unstretched films. First, the parallel orientation of PVDF crystals reduced the dielectric loss from the αc relaxation in α crystals. Second, biaxial stretching constrained the amorphous phase in P(VDF-HFP) and thus the migrational loss from impurity ions was reduced. Third, biaxial stretching induced a significant amount of rigid amorphous phase in PET, further enhancing the breakdown strength of multilayer films. Due to the synergistic effects of improved interfacial adhesion and biaxial orientation, the PET/PMMA/P(VDF-HFP) 65-layer films with 8 vol % PMMA exhibited optimal dielectric properties with an energy density of 17.4 J/cm(3) at breakdown and the lowest dielectric loss. These three-component multilayer films are promising for future high-energy-density film capacitor applications.

Fast Breakdown as Coronal/Ionization Waves?

NASA Astrophysics Data System (ADS)

Krehbiel, P. R.; Petersen, D.; da Silva, C. L.

2017-12-01

Studies of high-power narrow bipolar events (NBEs) have shown they are produced by a newly-recognized breakdown process called fast positive breakdown (FPB, Rison et al., 2016, doi:10.1038/ncomms10721). The breakdown was inferred to be produced by a system of positive streamers that propagate at high speed ( ˜3-6 x 107 m/s) due to occurring in a localized region of strong electric field. The polarity of the breakdown was determined from broadband interferometer (INTF) observations of the propagation direction of its VHF radiation, which was downward into the main negative charge region of a normally-electrified storm. Subsequent INTF observations being conducted in at Kennedy Space Center in Florida have shown a much greater incidence of NBEs than in New Mexico. Among the larger dataset have been clear-cut instances of some NBEs being produced by upward breakdown that would be of negative polarity. The speed and behavior of the negative breakdown is the same as that of the fast positive, leading to it being termed fast negative breakdown (FNB). The similarity (not too mention its occurrence) is surprising, given the fact that negative streamers and breakdown develops much differently than that of positive breakdown. The question is how this happens. In this study, we compare fast breakdown characteristics to well-known streamer properties as inferred from laboratory experiments and theoretical analysis. Additionally, we begin to explore the possibility that both polarities of fast breakdown are produced by what may be called coronal or ionization waves, in which the enhanced electric field produced by streamer or coronal breakdown of either polarity propagates away from the advancing front at the speed of light into a medium that is in a metastable condition of being at the threshold of hydrometeor-mediated corona onset or other ionization processes. The wave would develop at a faster speed than the streamer breakdown that gives rise to it, and thus would be somewhat analogous to a phase velocity. Once started, the breakdown would tend to be polarity independent. The main difference would be that FNB would be more difficult to initiate and therefore less common, which agrees with current observations.

Photoinduced Hund excitons in the breakdown of a two-orbital Mott insulator

NASA Astrophysics Data System (ADS)

Rincón, Julián; Dagotto, Elbio; Feiguin, Adrian E.

2018-06-01

We study the photoinduced breakdown of a two-orbital Mott insulator and resulting metallic state. Using time-dependent density matrix renormalization group, we scrutinize the real-time dynamics of the half-filled two-orbital Hubbard model interacting with a resonant radiation field pulse. The breakdown, caused by production of doublon-holon pairs, is enhanced by Hund's exchange, which dynamically activates large orbital fluctuations. The melting of the Mott insulator is accompanied by a high to low spin transition with a concomitant reduction of antiferromagnetic spin fluctuations. Most notably, the overall time response is driven by the photogeneration of excitons with orbital character that are stabilized by Hund's coupling. These unconventional "Hund excitons" correspond to bound spin-singlet orbital-triplet doublon-holon pairs. We study exciton properties such as bandwidth, binding potential, and size within a semiclassical approach. The photometallic state results from a coexistence of Hund excitons and doublon-holon plasma.

Optical measurements for interfacial conduction and breakdown

NASA Astrophysics Data System (ADS)

Hebner, R. E., Jr.; Kelley, E. F.; Hagler, J. N.

1983-01-01

Measurements and calculations contributing to the understanding of space and surface charges in practical insulation systems are given. Calculations are presented which indicate the size of charge densities necessary to appreciably modify the electric field from what would be calculated from geometrical considerations alone. Experimental data is also presented which locates the breakdown in an electrode system with a paper sample bridging the gap between the electrodes. It is found that with careful handling, the breakdown does not necessarily occur along the interface even if heavily contaminated oil is used. The effects of space charge in the bulk liquid are electro-optically examined in nitrobenzene and transformer oil. Several levels of contamination in transformer oil are investigated. Whereas much space charge can be observed in nitrobenzene, very little space charge, if any, can be observed in the transformer oil samples even at temperatures near 100 degrees C.

Scintillation Breakdowns in Chip Tantalum Capacitors

NASA Technical Reports Server (NTRS)

Teverovsky, Alexander

2008-01-01

Scintillations in solid tantalum capacitors are momentarily local breakdowns terminated by a self-healing or conversion to a high-resistive state of the manganese oxide cathode. This conversion effectively caps the defective area of the tantalum pentoxide dielectric and prevents short-circuit failures. Typically, this type of breakdown has no immediate catastrophic consequences and is often considered as nuisance rather than a failure. Scintillation breakdowns likely do not affect failures of parts under surge current conditions, and so-called "proofing" of tantalum chip capacitors, which is a controllable exposure of the part after soldering to voltages slightly higher than the operating voltage to verify that possible scintillations are self-healed, has been shown to improve the quality of the parts. However, no in-depth studies of the effect of scintillations on reliability of tantalum capacitors have been performed so far. KEMET is using scintillation breakdown testing as a tool for assessing process improvements and to compare quality of different manufacturing lots. Nevertheless, the relationship between failures and scintillation breakdowns is not clear, and this test is not considered as suitable for lot acceptance testing. In this work, scintillation breakdowns in different military-graded and commercial tantalum capacitors were characterized and related to the rated voltages and to life test failures. A model for assessment of times to failure, based on distributions of breakdown voltages, and accelerating factors of life testing are discussed.

Breakdown Characteristic Analysis of Paper- Oil Insulation under AC and DC Voltage

NASA Astrophysics Data System (ADS)

Anuar, N. F.; Jamail, N. A. M.; Rahman, R. A.; Kamarudin, M. S.

2017-08-01

This paper presents the study of breakdown characteristic of Kraft paper insulated with two different types of insulating fluid, which are Palm oil and Coconut oil. Palm oil and Coconut oil are chosen as the alternative fluid to the transformer oil because it has high potential and environmentally-friendly. The Segezha Kraft papers with various thicknesses (65.5 gsm, 75 gsm, 85gsm, 90 gsm) have been used in this research. High Voltage Direct Current (HVDC), High Voltage Alternating Current (HVAC) and carbon track and severity analysis is conducted to observe the sample of aging Kraft paper. These samples have been immersed using Palm oil and Coconut oil up to 90 days to observe the absorption rate. All samples started to reach saturation level at 70 days of immersion. HVDC and HVAC breakdown experiments have been done after the samples had reached the saturation level based on normal condition, immersed in Palm oil and immersed in Coconut oil. All samples immersed in liquid show different breakdown voltage reading compared to normal condition. The analysis of carbon track and severity on surface has been done using Analytical Scanning Electron Microscope (SEM) Analysis. The results of the experiment show that the sample of Kraft paper immersed in Palm oil was better than Coconut oil immersed sample. Therefore the sample condition was the main factor that determines the value of breakdown voltage test. Introduction

Plasma Deposited SiO2 for Planar Self-Aligned Gate Metal-Insulator-Semiconductor Field Effect Transistors on Semi-Insulating InP

NASA Technical Reports Server (NTRS)

Tabory, Charles N.; Young, Paul G.; Smith, Edwyn D.; Alterovitz, Samuel A.

1994-01-01

Metal-insulator-semiconductor (MIS) field effect transistors were fabricated on InP substrates using a planar self-aligned gate process. A 700-1000 A gate insulator of Si02 doped with phosphorus was deposited by a direct plasma enhanced chemical vapor deposition at 400 mTorr, 275 C, 5 W, and power density of 8.5 MW/sq cm. High frequency capacitance-voltage measurements were taken on MIS capacitors which have been subjected to a 700 C anneal and an interface state density of lxl0(exp 11)/eV/cq cm was found. Current-voltage measurements of the capacitors show a breakdown voltage of 107 V/cm and a insulator resistivity of 10(exp 14) omega cm. Transistors were fabricated on semi-insulating InP using a standard planar self-aligned gate process in which the gate insulator was subjected to an ion implantation activation anneal of 700 C. MIS field effect transistors gave a maximum extrinsic transconductance of 23 mS/mm for a gate length of 3 microns. The drain current drift saturated at 87.5% of the initial current, while reaching to within 1% of the saturated value after only 1x10(exp 3). This is the first reported viable planar InP self-aligned gate transistor process reported to date.

Torus Breakdown and Homoclinic Chaos in a Glow Discharge Tube

NASA Astrophysics Data System (ADS)

Ginoux, Jean-Marc; Meucci, Riccardo; Euzzor, Stefano

2017-12-01

Starting from historical researches, we used, like Van der Pol and Le Corbeiller, a cubic function for modeling the current-voltage characteristic of a direct current low-pressure plasma discharge tube, i.e. a neon tube. This led us to propose a new four-dimensional autonomous dynamical system allowing to describe the experimentally observed phenomenon. Then, mathematical analysis and detailed numerical investigations of such a fourth-order torus circuit enabled to highlight bifurcation routes from torus breakdown to homoclinic chaos following the Newhouse-Ruelle-Takens scenario.

Vertical GaN merged PiN Schottky diode with a breakdown voltage of 2 kV

NASA Astrophysics Data System (ADS)

Hayashida, Tetsuro; Nanjo, Takuma; Furukawa, Akihiko; Yamamuka, Mikio

2017-06-01

In this study, we successfully fabricated vertical GaN merged PiN Schottky (MPS) diodes and comparatively investigated the cyclic p-GaN width (W p) dependence of their electrical characteristics, including turn-on voltage and reverse leakage current. The MPS diodes with W p of more than 6 µm can turn on at around 3 V. Increasing W p can suppress the reverse leakage current. Moreover, the vertical GaN MPS diode with the breakdown voltage of 2 kV was realized for the first time.

Evolution of South Atlantic density and chemical stratification across the last deglaciation

PubMed Central

Skinner, Luke C.; Peck, Victoria L.; Kender, Sev; Elderfield, Henry; Waelbroeck, Claire; Hodell, David A.

2016-01-01

Explanations of the glacial–interglacial variations in atmospheric pCO2 invoke a significant role for the deep ocean in the storage of CO2. Deep-ocean density stratification has been proposed as a mechanism to promote the storage of CO2 in the deep ocean during glacial times. A wealth of proxy data supports the presence of a “chemical divide” between intermediate and deep water in the glacial Atlantic Ocean, which indirectly points to an increase in deep-ocean density stratification. However, direct observational evidence of changes in the primary controls of ocean density stratification, i.e., temperature and salinity, remain scarce. Here, we use Mg/Ca-derived seawater temperature and salinity estimates determined from temperature-corrected δ18O measurements on the benthic foraminifer Uvigerina spp. from deep and intermediate water-depth marine sediment cores to reconstruct the changes in density of sub-Antarctic South Atlantic water masses over the last deglaciation (i.e., 22–2 ka before present). We find that a major breakdown in the physical density stratification significantly lags the breakdown of the deep-intermediate chemical divide, as indicated by the chemical tracers of benthic foraminifer δ13C and foraminifer/coral 14C. Our results indicate that chemical destratification likely resulted in the first rise in atmospheric pCO2, whereas the density destratification of the deep South Atlantic lags the second rise in atmospheric pCO2 during the late deglacial period. Our findings emphasize that the physical and chemical destratification of the ocean are not as tightly coupled as generally assumed. PMID:26729858

Evolution of South Atlantic density and chemical stratification across the last deglaciation.

PubMed

Roberts, Jenny; Gottschalk, Julia; Skinner, Luke C; Peck, Victoria L; Kender, Sev; Elderfield, Henry; Waelbroeck, Claire; Vázquez Riveiros, Natalia; Hodell, David A

2016-01-19

Explanations of the glacial-interglacial variations in atmospheric pCO2 invoke a significant role for the deep ocean in the storage of CO2. Deep-ocean density stratification has been proposed as a mechanism to promote the storage of CO2 in the deep ocean during glacial times. A wealth of proxy data supports the presence of a "chemical divide" between intermediate and deep water in the glacial Atlantic Ocean, which indirectly points to an increase in deep-ocean density stratification. However, direct observational evidence of changes in the primary controls of ocean density stratification, i.e., temperature and salinity, remain scarce. Here, we use Mg/Ca-derived seawater temperature and salinity estimates determined from temperature-corrected δ(18)O measurements on the benthic foraminifer Uvigerina spp. from deep and intermediate water-depth marine sediment cores to reconstruct the changes in density of sub-Antarctic South Atlantic water masses over the last deglaciation (i.e., 22-2 ka before present). We find that a major breakdown in the physical density stratification significantly lags the breakdown of the deep-intermediate chemical divide, as indicated by the chemical tracers of benthic foraminifer δ(13)C and foraminifer/coral (14)C. Our results indicate that chemical destratification likely resulted in the first rise in atmospheric pCO2, whereas the density destratification of the deep South Atlantic lags the second rise in atmospheric pCO2 during the late deglacial period. Our findings emphasize that the physical and chemical destratification of the ocean are not as tightly coupled as generally assumed.

Kohn-Sham approach to quantum electrodynamical density-functional theory: Exact time-dependent effective potentials in real space.

PubMed

Flick, Johannes; Ruggenthaler, Michael; Appel, Heiko; Rubio, Angel

2015-12-15

The density-functional approach to quantum electrodynamics extends traditional density-functional theory and opens the possibility to describe electron-photon interactions in terms of effective Kohn-Sham potentials. In this work, we numerically construct the exact electron-photon Kohn-Sham potentials for a prototype system that consists of a trapped electron coupled to a quantized electromagnetic mode in an optical high-Q cavity. Although the effective current that acts on the photons is known explicitly, the exact effective potential that describes the forces exerted by the photons on the electrons is obtained from a fixed-point inversion scheme. This procedure allows us to uncover important beyond-mean-field features of the effective potential that mark the breakdown of classical light-matter interactions. We observe peak and step structures in the effective potentials, which can be attributed solely to the quantum nature of light; i.e., they are real-space signatures of the photons. Our findings show how the ubiquitous dipole interaction with a classical electromagnetic field has to be modified in real space to take the quantum nature of the electromagnetic field fully into account.

Center conductor diagnostic for multipactor detection in inaccessible geometries

NASA Astrophysics Data System (ADS)

Chaplin, Vernon H.; Hubble, Aimee A.; Clements, Kathryn A.; Graves, Timothy P.

2017-01-01

Electron collecting current probes are the most reliable diagnostic of multipactor and radiofrequency (RF) ionization breakdown; however, stand-alone probes can only be used in test setups where the breakdown region is physically accessible. This paper describes techniques for measuring multipactor current directly on the center conductor of a coaxial RF device (or more generally, on the signal line in any two-conductor RF system) enabling global multipactor detection with improved sensitivity compared to other common diagnostics such as phase null, third harmonic, and reflected power. The center conductor diagnostic may be AC coupled for use in systems with a low DC impedance between the center conductor and ground. The effect of DC bias on the breakdown threshold was studied: in coaxial geometry, the change in threshold was <1 dB for positive biases satisfying VD C/VR F 0 <0.8 , where VRF0 is the RF voltage amplitude at the unperturbed breakdown threshold. In parallel plate geometry, setting VD C/VR F 0 <0.2 was necessary to avoid altering the threshold by more than 1 dB. In most cases, the center conductor diagnostic functions effectively with no bias at all—this is the preferred implementation, but biases in the range VD C=0 -10 V may be applied if necessary. The polarity of the detected current signal may be positive or negative depending on whether there is net electron collection or emission globally.

Center conductor diagnostic for multipactor detection in inaccessible geometries.

PubMed

Chaplin, Vernon H; Hubble, Aimee A; Clements, Kathryn A; Graves, Timothy P

2017-01-01

Electron collecting current probes are the most reliable diagnostic of multipactor and radiofrequency (RF) ionization breakdown; however, stand-alone probes can only be used in test setups where the breakdown region is physically accessible. This paper describes techniques for measuring multipactor current directly on the center conductor of a coaxial RF device (or more generally, on the signal line in any two-conductor RF system) enabling global multipactor detection with improved sensitivity compared to other common diagnostics such as phase null, third harmonic, and reflected power. The center conductor diagnostic may be AC coupled for use in systems with a low DC impedance between the center conductor and ground. The effect of DC bias on the breakdown threshold was studied: in coaxial geometry, the change in threshold was <1 dB for positive biases satisfying V DC /V RF0 <0.8, where V RF0 is the RF voltage amplitude at the unperturbed breakdown threshold. In parallel plate geometry, setting V DC /V RF0 <0.2 was necessary to avoid altering the threshold by more than 1 dB. In most cases, the center conductor diagnostic functions effectively with no bias at all-this is the preferred implementation, but biases in the range V DC =0-10V may be applied if necessary. The polarity of the detected current signal may be positive or negative depending on whether there is net electron collection or emission globally.

Digitally grown AlInAsSb for high gain separate absorption, grading, charge, and multiplication avalanche photodiodes

NASA Astrophysics Data System (ADS)

Lyu, Yuexi; Han, Xi; Sun, Yaoyao; Jiang, Zhi; Guo, Chunyan; Xiang, Wei; Dong, Yinan; Cui, Jie; Yao, Yuan; Jiang, Dongwei; Wang, Guowei; Xu, Yingqiang; Niu, Zhichuan

2018-01-01

We report on the growth of high quality GaSb-based AlInAsSb quaternary alloy by molecular beam epitaxy (MBE) to fabricate avalanche photodiodes (APDs). By means of high resolution X-ray diffraction (HRXRD) and scanning transmission electron microscope (STEM), phase separation phenomenon of AlInAsSb random alloy with naturally occurring vertical superlattice configuration was demonstrated. To overcome the tendency for phase segregation while maintaining a highly crystalline film, a digital alloy technique with migration-enhanced epitaxy growth method was employed, using a shutter sequence of AlSb, AlAs, AlSb, Sb, In, InAs, In, Sb. AlInAsSb digital alloy has proved to be reproducible and consistent with single phase, showing sharp satellite peaks on HRXRD rocking curve and smooth surface morphology under atomic force microscopy (AFM). Using optimized digital alloy, AlInAsSb separate absorption, grading, charge, and multiplication (SAGCM) APD was grown and fabricated. At room temperature, the device showed high performance with low dark current density of ∼14.1 mA/cm2 at 95% breakdown and maximum stable gain before breakdown as high as ∼200, showing the potential for further applications in optoelectronic devices.

Feasibility of detection and identification of individual bioaerosols using laser-induced breakdown spectroscopy.

PubMed

Dixon, P B; Hahn, D W

2005-01-15

The detection and identification of individual bioaerosols using laser-induced breakdown spectroscopy (LIBS) is investigated using aerosolized Bacillus spores. Spores of Bacillus atrophaeous, Bacillus pumilus, and Bacillus stearothemophilus were introduced into an aerosol flow stream in a prescribed manner such that single-particle LIBS detection was realized. Bacillus spores were successfully detected based on the presence of the 393.4- and 396.9-nm calcium atomic emission lines. Statistical analyses based on the aerosol number density, the LIBS-based spore sampling frequency, and the distribution of the resulting calcium mass loadings support the conclusion of individual spore detection within single-shot laser-induced plasmas. The average mass loadings were in the range of 2-3 fg of calcium/Bacillus spore, which corresponds to a calcium mass percentage of approximately 0.5%. While individual spores were detected based on calcium emission, the resulting Bacillus spectra were free from CN emission bands, which has implications for the detection of elemental carbon, and LIBS-based detection of single spores based on the presence of magnesium or sodium atomic emission was unsuccessful. Based on the current instrumental setup and analyses, real-time LIBS-based detection and identification of single Bacillus spores in ambient (i.e., real life) conditions appears unfeasible.

Heterojunction diodes in 3C-SiC/Si system grown by reactive magnetron sputtering: Effects of growth temperature on diode rectification and breakdown

NASA Astrophysics Data System (ADS)

Wahab, Q.; Karlsteen, M.; Nur, O.; Hultman, L.; Willander, M.; Sundgren, J.-E.

1996-09-01

3C-SiC/Si heterojunction diodes were prepared by reactive magnetron sputtering of pure Si in CH4-Ar discharge on Si(111) substrates kept at temperatures (Ts) ranging from 800 to 1000°C. A good diode rectification process started for films grown at Ts≤900°C. Heterojunction diodes grown at Ts = 850°C showed the best performance with a saturation current density of 2.4 × 10-4 A cm-2. Diode reverse breakdown was obtained at a voltage of -110 V. The doping concentration (Nd) of the 3C-SiC films was calculated from 1/C2 vs V plot to be 3 × 1015 cm-3. Band offset values obtained were -0.27 and 1.35 eV for the conduction and valence band, respectively. X-ray diffraction analysis revealed the film grown at Ts = 850°C to be single-phase 3C-SiC. The full width at half maximum of the 3C-SiC(111) peak was only 0.25 degree. Cross-sectional transmission electron microscopy showed the film to be highly (111)-oriented with an epitaxial columnar structure of double positioning domain boundaries.

Atomic layer deposited high-k nanolaminate capacitors

NASA Astrophysics Data System (ADS)

Smith, S. W.; McAuliffe, K. G.; Conley, J. F., Jr.

2010-10-01

Al 2O 3-Ta 2O 5 nanolaminate films were prepared via atomic layer deposition (ALD) on silicon with a single overall composition and thickness, but with a varying number of Al 2O 3/Ta 2O 5 bilayers. The composition of the films was roughly 57% Al 2O 3 and 43% Ta 2O 5 and the total film thickness was held at ˜58 nm, while the number of bilayers was varied from 3 to 192 by changing the target bilayer thickness from ˜19.2 nm to ˜0.3 nm. Varying the number of bilayers was found to impact electrical properties. Although, almost all laminate films exhibited leakage, breakdown, hysteresis, and overall dielectric constant intermediate between pure Al 2O 3 and Ta 2O 5 films, laminates with few bilayers exhibited leakage current density lower than Al 2O 3 over the range of ˜3.5-4.5 MV/cm. Select samples annealed at temperatures from 400 to 900 °C were compared with as-deposited laminates. Annealing the laminate films at low temperatures improved leakage and breakdown while higher temperature anneals degraded both leakage and breakdown but improved the effective dielectric constant. A figure of merit was used to evaluate the overall ability of the various films to store charge. It was found that the few bilayer laminates were ranked higher than the many bilayer laminates as well as above both the pure Ta 2O 5 and pure Al 2O 3 films. These results indicate that even for a fixed overall composition, the electrical properties of a nanolaminate can be adjusted by varying the number of bilayers.

High-voltage subnanosecond dielectric breakdown

NASA Astrophysics Data System (ADS)

Mankowski, John Jerome

Current interests in ultrawideband radar sources are in the microwave regime, which correspond to voltage pulse risetimes less than a nanosecond. Some new sources, including the Phillips Laboratory Hindenberg series of hydrogen gas switched pulsers use hydrogen at hundreds of atmospheres of pressure in the switch. Unfortunately, the published data of electrical breakdown of gas and liquid media at these time lengths are relatively scarce. A study was conducted on the electrical breakdown properties of liquid and gas dielectrics at subnanosecond and nanoseconds. Two separate voltage sources with pulse risetimes less than 400 ps were developed. Diagnostic probes were designed and tested for their capability of detecting high voltage pulses at these fast risetimes. A thorough investigation into E-field strengths of liquid and gas dielectrics at breakdown times ranging from 0.4 to 5 ns was performed. The voltage polarity dependence on breakdown strength is observed. Streak camera images of streamer formation were taken. The effect of ultraviolet radiation, incident upon the gap, on statistical lag time was determined.

5.0 kV breakdown-voltage vertical GaN p-n junction diodes

NASA Astrophysics Data System (ADS)

Ohta, Hiroshi; Hayashi, Kentaro; Horikiri, Fumimasa; Yoshino, Michitaka; Nakamura, Tohru; Mishima, Tomoyoshi

2018-04-01

A high breakdown voltage of 5.0 kV has been achieved for the first time in vertical GaN p-n junction diodes by using our newly developed guard-ring structures. A resistance device was inserted between the main diode portion and the guard-ring portion in a ring-shaped p-n diode to generate a voltage drop over the resistance device by leakage current flowing through the guard-ring portion under negatively biased conditions before breakdown. The voltage at the outer mesa edge of the guard-ring portion, where the electric field intensity is highest and the destructive breakdown usually occurs, is decreased by the voltage drop, so the electric field concentration in the portion is reduced. By adopting this structure, the breakdown voltage (V B) is raised by about 200 V. Combined with a low measured on-resistance (R on) of 1.25 mΩ cm2, Baliga’s figure of merit (V\\text{B}2/R\\text{on}) was as high as 20 GW/cm2.

Dielectric breakdown strength of magnetic nanofluid based on insulation oil after impulse test

NASA Astrophysics Data System (ADS)

Nazari, M.; Rasoulifard, M. H.; Hosseini, H.

2016-02-01

In this study, the dielectric breakdown strength of magnetic nanofluids based on transformer mineral oil for use in power systems is reviewed. Nano oil samples are obtained from dispersion of the magnetic nanofluid within uninhibited transformer mineral oil NYTRO LIBRA as the base fluid. AC dielectric breakdown voltage measurement was carried out according to IEC 60156 standard and the lightning impulse breakdown voltage was obtained by using the sphere-sphere electrodes in an experimental setup for nano oil in volume concentration of 0.1-0.6%. Results indicate improved AC and lightning impulse breakdown voltage of nano oil compared to the base oil. AC test was performed again after applying impulse current and result showed that nano oil unlike the base oil retains its dielectric properties. Increase the dielectric strength of the nano oil is mainly due to dielectric and magnetic properties of Fe3O4 nanoparticles that act as free electrons snapper, and reduce the rate of free electrons in the ionization process.

Volcanic Plume Heights on Mars: Limits of Validity for Convective Models

NASA Technical Reports Server (NTRS)

Glaze, Lori S.; Baloga, Stephen M.

2002-01-01

Previous studies have overestimated volcanic plume heights on Mars. In this work, we demonstrate that volcanic plume rise models, as currently formulated, have only limited validity in any environment. These limits are easily violated in the current Mars environment and may also be violated for terrestrial and early Mars conditions. We indicate some of the shortcomings of the model with emphasis on the limited applicability to current Mars conditions. Specifically, basic model assumptions are violated when (1) vertical velocities exceed the speed of sound, (2) radial expansion rates exceed the speed of sound, (3) radial expansion rates approach or exceed the vertical velocity, or (4) plume radius grossly exceeds plume height. All of these criteria are violated for the typical Mars example given here. Solutions imply that the convective rise, model is only valid to a height of approximately 10 kilometers. The reason for the model breakdown is hat the current Mars atmosphere is not of sufficient density to satisfy the conservation equations. It is likely that diffusion and other effects governed by higher-order differential equations are important within the first few kilometers of rise. When the same criteria are applied to eruptions into a higher-density early Mars atmosphere, we find that eruption rates higher than 1.4 x 10(exp 9) kilograms per second also violate model assumptions. This implies a maximum extent of approximately 65 kilometers for convective plumes on early Mars. The estimated plume heights for both current and early Mars are significantly lower than those previously predicted in the literature. Therefore, global-scale distribution of ash seems implausible.

Improved Dielectric Films For Capacitors

NASA Technical Reports Server (NTRS)

Yen, Shiao-Ping S.; Lewis, Carol R.; Cygan, Peter J.; Jow, T. Richard

1994-01-01

Dielectric films made from blends of some commercially available high-dielectric-constant cyanoresins with each other and with cellulose triacetate (CTA) have both high dielectric constants and high breakdown strengths. Dielectric constants as high as 16.2. Films used to produce high-energy-density capacitors.

Examining the Use of Internal Defect Information for Information-Augmented Hardwood Log Breakdown

Treesearch

Luis G. Occeña; Daniel L. Schmoldt; Suraphan Thawornwong

1997-01-01

In present-day hardwood sawmills, log breakdown is hampered by incomplete information about log geometry and internal features. When internal log scanning becomes operational, it will remove this roadblock and provide a complete view of each logâs interior. It is not currently obvious, however, how dramatically this increased level of information will improve log...

Novel dielectric reduces corona breakdown in ac capacitors

NASA Technical Reports Server (NTRS)

Loehner, J. L.

1972-01-01

Dielectric system was developed which consists of two layers of 25-gage paper separated by one layer of 50-gage polypropylene to reduce corona breakdown in ac capacitors. System can be used in any alternating current application where constant voltage does not exceed 400 V rms. With a little research it could probably be increased to 700 to 800 V rms.

Enhanced dielectric standoff and mechanical failure in field-structured composites

NASA Astrophysics Data System (ADS)

Martin, James E.; Tigges, Chris P.; Anderson, Robert A.; Odinek, Judy

1999-09-01

We report dielectric breakdown experiments on electric-field-structured composites of high-dielectric-constant BaTiO3 particles in an epoxy resin. These experiments show a significant increase in the dielectric standoff strength perpendicular to the field structuring direction, relative to control samples consisting of randomly dispersed particles. To understand the relation of this observation to microstructure, we apply a simple resistor-short breakdown model to three-dimensional composite structures generated from a dynamical simulation. In this breakdown model the composite material is assumed to conduct primarily through particle contacts, so the simulated structures are mapped onto a resistor network where the center of mass of each particle is a node that is connected to neighboring nodes by resistors of fixed resistance that irreversibly short to perfect conductors when the current reaches a threshold value. This model gives relative breakdown voltages that are in good agreement with experimental results. Finally, we consider a primitive model of the mechanical strength of a field-structured composite material, which is a current-driven, conductor-insulator fuse model. This model leads to a macroscopic fusing behavior and can be related to mechanical failure of the composite.

Evaluation of high temperature capacitor dielectrics

NASA Astrophysics Data System (ADS)

Hammoud, Ahmad N.; Myers, Ira T.

Experiments were carried out to evaluate four candidate materials for high temperature capacitor dielectric applications. The materials investigated were polybenzimidazole polymer and three aramid papers: Voltex 450, Nomex 410, and Nomex M 418, an aramid paper containing 50 percent mica. The samples were heat treated for six hours at 60 C and the direct current and 60 Hz alternating current breakdown voltages of both dry and impregnated samples were obtained in a temperature range of 20 to 250 C. The samples were also characterized in terms of their dielectric constant, dielectric loss, and conductivity over this temperature range with an electrical stress of 60 Hz, 50 V/mil present. Additional measurements are underway to determine the volume resistivity, thermal shrinkage, and weight loss of the materials. Preliminary data indicate that the heat treatment of the films slightly improves the dielectric properties with no influence on their breakdown behavior. Impregnation of the samples leads to significant increases in both alternating and direct current breakdown strength. The results are discussed and conclusions made concerning their suitability as high temperature capacitor dielectrics.

Evaluation of high temperature capacitor dielectrics

NASA Technical Reports Server (NTRS)

Hammoud, Ahmad N.; Myers, Ira T.

1992-01-01

Experiments were carried out to evaluate four candidate materials for high temperature capacitor dielectric applications. The materials investigated were polybenzimidazole polymer and three aramid papers: Voltex 450, Nomex 410, and Nomex M 418, an aramid paper containing 50 percent mica. The samples were heat treated for six hours at 60 C and the direct current and 60 Hz alternating current breakdown voltages of both dry and impregnated samples were obtained in a temperature range of 20 to 250 C. The samples were also characterized in terms of their dielectric constant, dielectric loss, and conductivity over this temperature range with an electrical stress of 60 Hz, 50 V/mil present. Additional measurements are underway to determine the volume resistivity, thermal shrinkage, and weight loss of the materials. Preliminary data indicate that the heat treatment of the films slightly improves the dielectric properties with no influence on their breakdown behavior. Impregnation of the samples leads to significant increases in both alternating and direct current breakdown strength. The results are discussed and conclusions made concerning their suitability as high temperature capacitor dielectrics.

Simultaneous species concentration and temperature measurements using laser induced breakdown spectroscopy with direct spectrum matching

NASA Astrophysics Data System (ADS)

McGann, Brendan J.

Laser induced breakdown spectroscopy (LIBS) is used to simultaneously measure hydrocarbon fuel concentration and temperature in high temperature, high speed, compressible, and reacting flows, a regime in which LIBS has not been done previously. Emission spectra from the plasma produced from a focused laser pulse is correlated in the combustion region of a model scramjet operating in supersonic wind tunnel. A 532 nm Nd:YAG laser operating at 10 Hz is used to induce break-down. The emissions are captured during a 10 ns gate time approximately 75 ns after the first arrival of photons at the measurement location in order to minimize the measurement uncertainty in the turbulent, compressible, high-speed, and reacting environment. Three methods of emission detection are used and a new backward scattering direction method is developed that is beneficial in reducing the amount of optical access needed to perform LIBS measurements. Measurements are taken in the model supersonic combustion and the ignition process is shown to be highly dependent on fuel concentration and gas density as well as combustion surface temperature, concentration gradient, and flow field. Direct spectrum matching method is developed and used for quantitative measurements. In addition, a comprehensive database of spectra covering the fuel concentrations and gas densities found in the wind tunnel of Research Cell 19 at Wright Patterson Air Force Base is created which can be used for further work.

Off-line wafer level reliability control: unique measurement method to monitor the lifetime indicator of gate oxide validated within bipolar/CMOS/DMOS technology

NASA Astrophysics Data System (ADS)

Gagnard, Xavier; Bonnaud, Olivier

2000-08-01

We have recently published a paper on a new rapid method for the determination of the lifetime of the gate oxide involved in a Bipolar/CMOS/DMOS technology (BCD). Because this previous method was based on a current measurement with gate voltage as a parameter needing several stress voltages, it was applied only by lot sampling. Thus, we tried to find an indicator in order to monitor the gate oxide lifetime during the wafer level parametric test and involving only one measurement of the device on each wafer test cell. Using the Weibull law and Crook model, combined with our recent model, we have developed a new test method needing only one electrical measurement of MOS capacitor to monitor the quality of the gate oxide. Based also on a current measurement, the parameter is the lifetime indicator of the gate oxide. From the analysis of several wafers, we gave evidence of the possibility to detect a low performance wafer, which corresponds to the infantile failure on the Weibull plot. In order to insert this new method in the BCD parametric program, a parametric flowchart was established. This type of measurement is an important challenges, because the actual measurements, breakdown charge, Qbd, and breakdown electric field, Ebd, at parametric level and Ebd and interface states density, Dit during the process cannot guarantee the gate oxide lifetime all along fabrication process. This indicator measurement is the only one, which predicts the lifetime decrease.

Effects of different compositions from magnetic and nonmagnetic dopants on structural and electrical properties of ZnO nanoparticles-based varistor ceramics

NASA Astrophysics Data System (ADS)

Sendi, Rabab Khalid

2018-03-01

In the current study, 20 nm zinc oxide (ZnO) nanoparticles were used to manufacture high-density ZnO discs doped with Mn and Sn via the conventional ceramic processing method, and their properties were characterized. Results show that the dopants were found to have significant effects on the ZnO varistors, especially on the shape and size of grains, which are significantly different for both dopants. The strong solid-state reaction in the varistor from the 20 nm ZnO powder during the sintering process may be attributed to the high surface area of the 20 nm ZnO nanoparticles. Although Mn and Sn do not affect the well-known peaks related to the wurtzite structure of ZnO ceramics, a few of the additional peaks could be formed at high doping content (≥2.0) due to the formation of other unknown phases during the sintering process. Both additives also significantly affect the electrical properties of the varistor, with a marked changed in the breakdown voltage from 415 V to 460 V for Sn and from 400 V to 950 V for Mn. Interestingly, the electrical behaviors of the varistors, such as breakdown voltage, nonlinear coefficient, and barrier height, are higher for Mn- than Sn-doping samples, and the opposite behaviors hold for hardness, leakage currents, and electrical conductivities. Results show that the magnetic moment and valence state of the two additive dopants are responsible for all demonstrated differences in the electrical characteristics between the two dopants.

A meta-analysis of sex differences in human brain structure.

PubMed

Ruigrok, Amber N V; Salimi-Khorshidi, Gholamreza; Lai, Meng-Chuan; Baron-Cohen, Simon; Lombardo, Michael V; Tait, Roger J; Suckling, John

2014-02-01

The prevalence, age of onset, and symptomatology of many neuropsychiatric conditions differ between males and females. To understand the causes and consequences of sex differences it is important to establish where they occur in the human brain. We report the first meta-analysis of typical sex differences on global brain volume, a descriptive account of the breakdown of studies of each compartmental volume by six age categories, and whole-brain voxel-wise meta-analyses on brain volume and density. Gaussian-process regression coordinate-based meta-analysis was used to examine sex differences in voxel-based regional volume and density. On average, males have larger total brain volumes than females. Examination of the breakdown of studies providing total volumes by age categories indicated a bias towards the 18-59 year-old category. Regional sex differences in volume and tissue density include the amygdala, hippocampus and insula, areas known to be implicated in sex-biased neuropsychiatric conditions. Together, these results suggest candidate regions for investigating the asymmetric effect that sex has on the developing brain, and for understanding sex-biased neurological and psychiatric conditions. Copyright © 2014 The Authors. Published by Elsevier Ltd.. All rights reserved.

Novel electrode-elastomer combinations for improved performance and application of dielectric elastomers

NASA Astrophysics Data System (ADS)

Yuan, Wei

Dielectric elastomers are the most promising technology for mimicking human muscles in terms of strain, stress, and work density, etc. Actuators have been fabricated based on different design concepts and configurations for applications in robotics, prosthetic devices, medical implants, pumps, and valves. However, to date these actuators have experienced high rates of failure caused by electrical shorting of the compliant electrodes through the elastomer film during electrical breakdown, which has prevented their practical application. In this thesis, single walled carbon nanotube (SWNT) thin films were employed as compliant electrodes for dielectric elastomers to reduce the rate of failure. Thanks to the high aspect ratio of the SWNTs, the electrodes maintain substantial conductance at high biaxial strains. 3M VHB acrylics can be actuated up to 200% area strain with SWNT electrodes, this matches the performance of actuators with carbon grease electrodes. During uni-directional stretching, SWNT electrodes can maintain surface conductivity up to 700% linear strain. SWNT electrodes can experience a self-clearing process under high voltage discharging and electrically isolate the electrodes around the breakdown sites when breakdown events happen. With conventional dielectric elastomer electrode materials such as carbon grease and carbon black, a single breakdown event results in a permanent loss in the actuator's functionality. In contrast, for SWNT electrodes, the SWNTs around the breakdown site will be degraded and become non-conductive. The non-conductive area expands outward until the high voltage discharging stops. As such, the opposing electrodes are prevented from coming into contact with each other and forming an electrical short and the breakdown site is electrically isolated from the remainder of the active area. Despite the existence of the breakdown sites, the dielectric elastomer will resume its functionality and avoid permanent failure. Thus, dielectric elastomers with self-clearable SWNT electrodes will be self-healable. Due to the non-uniform surface morphology of SWNT thin films as well as their low turn-on voltage for field emission, corona discharging tends to occur on the electrode surface, even without the presence of a breakdown site through the film. The corona discharging will damage the SWNT electrodes, especially in the regions where the nanotube density is low. This in turn causes the dielectric elastomer to gradually lose its function. By applying a thin coating of dielectric oil on the SWNT electrodes, the corona discharging will be quenched. Dielectric elastomers with self-clearable SWNT electrodes combined with a dielectric oil coating show much longer lifetime and more stable operation. Thus, the SWNT self-clearable electrodes endow dielectric elastomers with fault-tolerance, high dielectric breakdown strength and long lifetime actuation. For examples, VHB acrylic elastomer can achieve 340 V/mum dielectric strength and 20x longer actuation. A dielectric strength of 270 V/mum and longer than 300 minutes of continuous actuation with 50% area strain have also obtained with silicone elastomers. This addition of self-clearable fault-tolerant electrodes to dielectric elastomers transducers improves the manufacturing yield and operational reliability of these artificial muscles and pushes them closer to commercialization.

Testing of typical spacecraft materials in a simulated substorm environment

NASA Technical Reports Server (NTRS)

Stevens, N. J.; Berkopec, F. D.; Staskus, J. V.; Blech, R. A.; Narciso, S. J.

1977-01-01

The test specimens were spacecraft paints, silvered Teflon, thermal blankets, and solar array segments. The samples, ranging in size from 300 to 1000 sq cm were exposed to monoenergetic electron energies from 2 to 20 keV at a current density of 1 NA/sq cm. The samples generally behaved as capacitors with strong voltage gradient at their edges. The charging characteristics of the silvered Teflon, Kapton, and solar cell covers were controlled by the secondary emission characteristics. Insulators that did not discharge were the spacecraft paints and the quartz fiber cloth thermal blanket sample. All other samples did experience discharges when the surface voltage reached -8 to -16kV. The discharges were photographed. The breakdown voltage for each sample was determined and the average energy lost in the discharge was computed.

Passivation of InP heterojunction bipolar transistors by strain controlled plasma assisted electron beam evaporated hafnium oxide

NASA Astrophysics Data System (ADS)

Driad, R.; Sah, R. E.; Schmidt, R.; Kirste, L.

2012-01-01

We present structural, stress, and electrical properties of plasma assisted e-beam evaporated hafnium dioxide (HfO2) layers on n-type InP substrates. These layers have subsequently been used for surface passivation of InGaAs/InP heterostructure bipolar transistors either alone or in combination with plasma enhanced chemical vapor deposited SiO2 layers. The use of stacked HfO2/SiO2 results in better interface quality with InGaAs/InP heterostructures, as illustrated by smaller leakage current and improved breakdown voltage. These improvements can be attributed to the reduced defect density and charge trapping at the dielectric-semiconductor interface. The deposition at room temperature makes these films suitable for sensitive devices.

The Study of Electrical Properties for Multilayer La2O3/Al2O3 Dielectric Stacks and LaAlO3 Dielectric Film Deposited by ALD.

PubMed

Feng, Xing-Yao; Liu, Hong-Xia; Wang, Xing; Zhao, Lu; Fei, Chen-Xi; Liu, He-Lei

2017-12-01

The capacitance and leakage current properties of multilayer La 2 O 3 /Al 2 O 3 dielectric stacks and LaAlO 3 dielectric film are investigated in this paper. A clear promotion of capacitance properties is observed for multilayer La 2 O 3 /Al 2 O 3 stacks after post-deposition annealing (PDA) at 800 °C compared with PDA at 600 °C, which indicated the recombination of defects and dangling bonds performs better at the high-k/Si substrate interface for a higher annealing temperature. For LaAlO 3 dielectric film, compared with multilayer La 2 O 3 /Al 2 O 3 dielectric stacks, a clear promotion of trapped charges density (N ot ) and a degradation of interface trap density (D it ) can be obtained simultaneously. In addition, a significant improvement about leakage current property is observed for LaAlO 3 dielectric film compared with multilayer La 2 O 3 /Al 2 O 3 stacks at the same annealing condition. We also noticed that a better breakdown behavior for multilayer La 2 O 3 /Al 2 O 3 stack is achieved after annealing at a higher temperature for its less defects.

Electro-Fenton for control and removal of micropollutants - process optimization and energy efficiency.

PubMed

Mousset, E; Wang, Z; Lefebvre, O

2016-11-01

The removal of micropollutants is an important environmental and health issue. Electro-Fenton offers an electrochemical advanced treatment that is particularly effective for the breakdown of aromatic contaminants. Due to the wide variety of chemicals, it is preferable to analyze model contaminants, such as phenol, when optimizing and assessing the efficacy of a novel treatment process. In this study, we therefore made use of innovative types of electrode material and optimized operating parameters (current density and aeration rate) for the removal of phenol by electro-Fenton, with a view to maximize the energy efficiency of the process. By determining the best current density (1.25 mA cm -2 ), frequency of aeration (continuous) and by using a boron-doped diamond (BDD) anode, it was possible to achieve over 98.5% phenol (1 mM) removal within 1.5 h. BDD further outcompeted platinum as anode material in terms of mineralization rate and yield, and displayed low energy consumption of 0.08 kWh (g-TOC) -1 , about one order of magnitude lower than other advanced oxidation processes, such as UV/TiO 2 and UV/O 3 . Furthermore, a carbon cloth anode proved even more cost-effective than BDD if the end goal is the removal of phenol by electro-Fenton instead of complete mineralization.

Ultra-High Accelerating Gradients in Radio-Frequency Cryogenic Copper Structures

NASA Astrophysics Data System (ADS)

Cahill, Alexander David

Normal conducting radio-frequency (rf) particle accelerators have many applications, including colliders for high energy physics, high-intensity synchrotron light sources, non-destructive testing for security, and medical radiation therapy. In these applications, the accelerating gradient is an important parameter. Specifically for high energy physics, increasing the accelerating gradient extends the potential energy reach and is viewed as a way to mitigate their considerable cost. Furthermore, a gradient increase will enable for more compact and thus accessible free electron lasers (FELs). The major factor limiting larger accelerating gradients is vacuum rf breakdown. Basic physics of this phenomenon has been extensively studied over the last few decades. During which, the occurrence of rf breakdowns was shown to be probabilistic, and can be characterized by a breakdown rate. The current consensus is that vacuum rf breakdowns are caused by movements of crystal defects induced by periodic mechanical stress. The stress may be caused by pulsed surface heating and large electric fields. A compelling piece of evidence that supports this hypothesis is that accelerating structures constructed from harder materials exhibit larger accelerating gradients for similar breakdown rates. One possible method to increase sustained electric fields in copper cavities is to cool them to temperatures below 77 K, where the rf surface resistance and coefficient of thermal expansion decrease, while the yield strength (which correlates with hardness) and thermal conductivity increase. These changes in material properties at low temperature increases metal hardness and decreases the mechanical stress from exposure to rf electromagnetic fields. To test the validity of the improvement in breakdown rate, experiments were conducted with cryogenic accelerating cavities in the Accelerator Structure Test Area (ASTA) at SLAC National Accelerator Laboratory. A short 11.4 GHz standing wave accelerating structure was conditioned to an accelerating gradient of 250 MV/m at 45 K with 108 rf pulses. At gradients greater than 150 MV/m I observed a degradation in the intrinsic quality factor of the cavity, Q0. I developed a model for the change in Q0 using measured field emission currents and rf signals. I found that the Q 0 degradation is consistent with the rf power being absorbed by strong field emission currents accelerated inside the cavity. I measured rf breakdown rates for 45 K and found 2*10-4/pulse/meter when accounting for any change in Q0. These are the largest accelerating gradients for a structure with similar breakdown rates. The final chapter presents the design of an rf photoinjector electron source that uses the cryogenic normal conducting accelerator technology: the TOPGUN. With this cryogenic rf photoinjector, the beam brightness will increase by over an order of a magnitude when compared to the current photoinjector for the Linac Coherent Light Source (LCLS). When using the TOPGUN as the source for an X-ray Free Electron Laser, the higher brightness would allow for a decrease in the required length of the LCLS undulator by more than a factor of two.

High-Field Fast-Risetime Pulse Failures in 4H- and 6H-SiC pn Junction Diodes

NASA Technical Reports Server (NTRS)

Neudeck, Philip G.; Fazi, Christian

1996-01-01

We report the observation of anomalous reverse breakdown behavior in moderately doped (2-3 x 10(exp 17 cm(exp -3)) small-area micropipe-free 4H- and 6H-SiC pn junction diodes. When measured with a curve tracer, the diodes consistently exhibited very low reverse leakage currents and sharp repeatable breakdown knees in the range of 140-150 V. However, when subjected to single-shot reverse bias pulses (200 ns pulsewidth, 1 ns risetime), the diodes failed catastrophically at pulse voltages of less than 100 V. We propose a possible mechanism for this anomalous reduction in pulsed breakdown voltage relative to dc breakdown voltage. This instability must be removed so that SiC high-field devices can operate with the same high reliability as silicon power devices.

Enhancement of AlGaN/GaN high-electron mobility transistor off-state drain breakdown voltage via backside proton irradiation

NASA Astrophysics Data System (ADS)

Ren, F.; Hwang, Y.-H.; Pearton, S. J.; Patrick, Erin; Law, Mark E.

2015-03-01

Proton irradiation from the backside of the samples were employed to enhance off-state drain breakdown voltage of AlGaN/GaN high electron mobility transistors (HEMTs) grown on Si substrates. Via holes were fabricated directly under the active area of the HEMTs by etching through the Si substrate for subsequent backside proton irradiation. By taking the advantage of the steep drop at the end of proton energy loss profile, the defects created by the proton irradiation from the backside of the sample could be precisely placed at specific locations inside the AlGaN/GaN HEMT structure. There were no degradation of drain current nor enhancement of off-state drain voltage breakdown voltage observed for the irradiated AlGaN/GaN HEMTs with the proton energy of 225 or 275 keV, for which the defects created by the proton irradiations were intentionally placed in the GaN buffer. HEMTs with defects placed in the 2 dimensional electron gas (2DEG) channel region and AlGaN barrier using 330 or 340 keV protons not only showed degradation of drain current, but also exhibited improvement of the off-state drain breakdown voltage. FLOODS TCAD finite-element simulations were performed to confirm the hypothesis of a virtual gate formed around the 2DEG region to reduce the peak electric field around the gate edges and increase the off-state drain breakdown voltage.

High density associative memory

NASA Technical Reports Server (NTRS)

Moopenn, Alexander W. (Inventor); Thakoor, Anilkumar P. (Inventor); Daud, Taher (Inventor); Lambe, John J. (Inventor)

1989-01-01

A multi-layered, thin-film, digital memory having associative recall. There is a first memory matrix and a second memory matrix. Each memory matrix comprises, a first layer comprising a plurality of electrically separated row conductors; a second layer comprising a plurality of electrically separated column conductors intersecting but electrically separated from the row conductors; and, a plurality of resistance elements electrically connected between the row condutors and the column conductors at respective intersections of the row conductors and the column conductors, each resistance element comprising, in series, a first resistor of sufficiently high ohmage to conduct a sensible element current therethrough with virtually no heat-generating power consumption when a low voltage as employed in thin-film applications is applied thereacross and a second resistor of sufficiently high ohmage to conduct no sensible current therethrough when a low voltage as employed in thin-film applications is applied thereacross, the second resistor having the quality of breaking down to create a short therethrough upon the application of a breakdown level voltage across the first and second resistors.

Research on the discharge characteristics for water tree in crosslinked polyethylene cable based on plasma-chemical model

NASA Astrophysics Data System (ADS)

Fan, Yang; Qi, Yang; Bing, Gao; Rong, Xia; Yanjie, Le; Iroegbu, Paul Ikechukwu

2018-03-01

Water tree is the predominant defect in high-voltage crosslinked polyethylene cables. The microscopic mechanism in the discharge process is not fully understood; hence, a drawback is created towards an effective method to evaluate the insulation status. In order to investigate the growth of water tree, a plasma-chemical model is developed. The dynamic characteristics of the discharge process including voltage waveform, current waveform, electron density, electric potential, and electric field intensity are analyzed. Our results show that the distorted electric field is the predominant contributing factor of electron avalanche formation, which inevitably leads to the formation of pulse current. In addition, it is found that characteristic parameters such as the pulse width and pulse number have a great relevance to the length of water tree. Accordingly, the growth of water tree can be divided into the initial stage, development stage, and pre-breakdown stage, which provides a reference for evaluating the deteriorated stages of crosslinked polyethylene cables.

Fast optical and electrical diagnostics of pulsed spark discharges in different gap geometries

NASA Astrophysics Data System (ADS)

Höft, Hans; Huiskamp, Tom; Kettlitz, Manfred

2016-09-01

Spark discharges in different electrode configurations and with various electrode materials were ignited in air at atmospheric pressure using a custom build pulse charger with 1 μs voltage rise time (up to 28 kV) in single shot operation. Fast voltage and current measurements were combined with iCCD imaging with high spatial resolution (better than 10 μm) on pin-to-pin, pin-to-half-sphere and symmetrical half-sphere tungsten electrodes and symmetrical half-sphere brass electrodes for electrode gaps of 0.1 to 0.7 mm. Breakdown voltages, consumed electrical energies and the discharge emission structures as well as the discharge diameters were obtained. Because of the synchronization of the electrical measurements and the iCCD imaging (i.e. one complete data set for every shot), it was possible to estimate the current density and the change of the discharge pattern, such as single or multiple channels, for all cases. EU funding under Grant No 316216 (PlasmaShape).

A Framework of Combining Case-Based Reasoning with a Work Breakdown Structure for Estimating the Cost of Online Course Production Projects

ERIC Educational Resources Information Center

He, Wu

2014-01-01

Currently, a work breakdown structure (WBS) approach is used as the most common cost estimation approach for online course production projects. To improve the practice of cost estimation, this paper proposes a novel framework to estimate the cost for online course production projects using a case-based reasoning (CBR) technique and a WBS. A…

Ground-Based High-Power Microwave Decoy Discrimination System.

DTIC Science & Technology

1987-12-23

understanding of plasma instabilities, self-induced magnetic effects , space - charge considerations, production of ion currents, etc. 3.3.4 Cross-Field...breakdown, due to small potential differences. Interaction volumes can therefore be large, avoiding breakdown and space - charge effects (at the price...the interference of the incident and reflected wave, and by the electrostatic forces of the surface (positive) and space charge (negative) trapped in

Experimental use of rubber-tire rollers as a means of improving density in asphalt overlays.

DOT National Transportation Integrated Search

1991-01-01

This study reports the results of comparative tests on sections of asphalt pavement rolled with conventional steel-wheel rollers and those rolled with a rubber tire roller added between the steel-wheel breakdown and steel wheel finish rollers. Nuclea...

Photoinduced Hund excitons in the breakdown of a two-orbital Mott insulator

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rincon, Julian; Dagotto, Elbio R.; Feiguin, Adrian E.

We study the photoinduced breakdown of a two-orbital Mott insulator and resulting metallic state. Using time-dependent density matrix renormalization group, we scrutinize the real-time dynamics of the half-filled two-orbital Hubbard model interacting with a resonant radiation field pulse. The breakdown, caused by production of doublon-holon pairs, is enhanced by Hund's exchange, which dynamically activates large orbital fluctuations. The melting of the Mott insulator is accompanied by a high to low spin transition with a concomitant reduction of antiferromagnetic spin fluctuations. Most notably, the overall time response is driven by the photogeneration of excitons with orbital character that are stabilized bymore » Hund's coupling. These unconventional “Hund excitons” correspond to bound spin-singlet orbital-triplet doublon-holon pairs. We study exciton properties such as bandwidth, binding potential, and size within a semiclassical approach. In conclusion, the photometallic state results from a coexistence of Hund excitons and doublon-holon plasma.« less

Leaf Breakdown in a Tropical Stream

NASA Astrophysics Data System (ADS)

Gonçalves, José Francisco, Jr.; França, Juliana S.; Medeiros, Adriana O.; Rosa, Carlos A.; Callisto, Marcos

2006-05-01

The objectives of this study were to investigate leaf breakdown in two reaches of different magnitudes, one of a 3rd (closed riparian vegetation) order and the other of a 4th (open riparian vegetation) order, in a tropical stream and to assess the colonization of invertebrates and microorganisms during the processing of detritus. We observed that the detritus in a reach of 4th order decomposed 2.4 times faster than the detritus in a reach of 3rd order, in which, we observed that nitrate concentration and water velocity were greater. This study showed that the chemical composition of detritus does not appear to be important in evaluating leaf breakdown. However, it was shown to be important to biological colonization. The invertebrate community appeared not to have been structured by the decomposition process, but instead by the degradative ecological succession process. With regards to biological colonization, we observed that the density of bacteria in the initial stages was more important while fungi appeared more in the intermediate and final stages.

Electrical response of Pt/Ru/PbZr0.52Ti0.48O3/Pt capacitor as function of lead precursor excess

NASA Astrophysics Data System (ADS)

Gueye, Ibrahima; Le Rhun, Gwenael; Renault, Olivier; Defay, Emmanuel; Barrett, Nicholas

2017-11-01

We investigated the influence of the surface microstructure and chemistry of sol-gel grown PbZr0.52Ti0.48O3 (PZT) on the electrical performance of PZT-based metal-insulator-metal (MIM) capacitors as a function of Pb precursor excess. Using surface-sensitive, quantitative X-ray photoelectron spectroscopy and scanning electron microscopy, we confirm the presence of ZrOx surface phase. Low Pb excess gives rise to a discontinuous layer of ZrOx on a (100) textured PZT film with a wide band gap reducing the capacitance of PZT-based MIMs whereas the breakdown field is enhanced. At high Pb excess, the nanostructures disappear while the PZT grain size increases and the film texture becomes (111). Concomitantly, the capacitance density is enhanced by 8.7%, and both the loss tangent and breakdown field are reduced by 20 and 25%, respectively. The role of the low permittivity, dielectric interface layer on capacitance and breakdown is discussed.

Photoinduced Hund excitons in the breakdown of a two-orbital Mott insulator

DOE PAGES

Rincon, Julian; Dagotto, Elbio R.; Feiguin, Adrian E.

2018-06-05

We study the photoinduced breakdown of a two-orbital Mott insulator and resulting metallic state. Using time-dependent density matrix renormalization group, we scrutinize the real-time dynamics of the half-filled two-orbital Hubbard model interacting with a resonant radiation field pulse. The breakdown, caused by production of doublon-holon pairs, is enhanced by Hund's exchange, which dynamically activates large orbital fluctuations. The melting of the Mott insulator is accompanied by a high to low spin transition with a concomitant reduction of antiferromagnetic spin fluctuations. Most notably, the overall time response is driven by the photogeneration of excitons with orbital character that are stabilized bymore » Hund's coupling. These unconventional “Hund excitons” correspond to bound spin-singlet orbital-triplet doublon-holon pairs. We study exciton properties such as bandwidth, binding potential, and size within a semiclassical approach. In conclusion, the photometallic state results from a coexistence of Hund excitons and doublon-holon plasma.« less

Robust Electrical Transfer System (RETS) for Solar Array Drive Mechanism SlipRing Assembly

NASA Astrophysics Data System (ADS)

Bommottet, Daniel; Bossoney, Luc; Schnyder, Ralph; Howling, Alan; Hollenstein, Christoph

2013-09-01

Demands for robust and reliable power transmission systems for sliprings for SADM (Solar Array Drive Mechanism) are increasing steadily. As a consequence, it is required to know their performances regarding the voltage breakdown limit.An understanding of the overall shape of the breakdown voltage versus pressure curve is established, based on experimental measurements of DC (Direct Current) gas breakdown in complex geometries compared with a numerical simulation model.In addition a detailed study was made of the functional behaviour of an entire wing of satellite in a like- operational mode, comprising the solar cells, the power transmission lines, the SRA (SlipRing Assembly), the power S3R (Sequential Serial/shunt Switching Regulators) and the satellite load to simulate the electrical power consumption.A test bench able to measure automatically the: a)breakdown voltage versus pressure curve and b)the functional switching performances, was developed and validated.

Observations of the initial stage of a rocket-and-wire-triggered lightning discharge

NASA Astrophysics Data System (ADS)

Zhang, Yang; Krehbiel, Paul R.; Zhang, Yijun; Lu, Weitao; Zheng, Dong; Xu, Liangtao; Huang, Zhigang

2017-05-01

Observations have been obtained of the initial stage of a rocket-and-wire-triggered lightning flash with a high-resolution broadband VHF interferometer. The discharge produced 54 precursor current pulses (PCPs) over 883 ms during the rocket's ascent. The interferometer observations show that the PCPs were produced by breakdown at the ascending tip of the rocket, and that individual PCPs were produced by weak upward positive breakdown over meters-scale distances, followed by more energetic, fast downward negative breakdown over several tens of meters distance. The average propagation speeds were 5 × 106 m s-1 and 3 × 107 m s-1, respectively. The sustained upward positive leader (UPL) was initiated by a rapid, repetitive burst of 14 precursor pulses. Upon initiation, the VHF radiation abruptly became continuous with time. Significantly, breakdown during the UPL appeared to extend the discharge in a similar manner to that of the precursor pulses.

Stability of Triggering of the Switch with Sharply Non-Uniform Electric Field at the Electrode with Negative Potential

NASA Astrophysics Data System (ADS)

Kovalchuk, B. M.; Zherlitsyn, A. A.; Kumpyak, E. V.

2017-12-01

Results of investigations into a two-electrode high-pressure gas switch with sharply non-uniform field at the electrode with negative potential operating in the self-breakdown regime with pulsed charging of a highvoltage capacitive energy storage for 100 μs to voltage exceeding 200 kV are presented. It is demonstrated that depending on the air pressure and the gap length, the corona-streamer discharge, whose current increases with voltage, arises in the switch at a voltage of 0.2-0.3 of the self-breakdown voltage. At the moment of switch self-breakdown, the corona-streamer discharge goes over to one or several spark channels. The standard deviation of the triggering moment can be within 1.5 μs, which corresponds to the standard deviation of the self-breakdown voltage less than 2 kV. The voltage stability can be better than 1.5%.

Modeling nitrogen plasmas produced by intense electron beams

DOE Office of Scientific and Technical Information (OSTI.GOV)

Angus, J. R.; Swanekamp, S. B.; Schumer, J. W.

2016-05-15

A new gas–chemistry model is presented to treat the breakdown of a nitrogen gas with pressures on the order of 1 Torr from intense electron beams with current densities on the order of 10 kA/cm{sup 2} and pulse durations on the order of 100 ns. For these parameter regimes, the gas transitions from a weakly ionized molecular state to a strongly ionized atomic state on the time scale of the beam pulse. The model is coupled to a 0D–circuit model using the rigid–beam approximation that can be driven by specifying the time and spatial profiles of the beam pulse. Simulation results are inmore » good agreement with experimental measurements of the line–integrated electron density from experiments done using the Gamble II generator at the Naval Research Laboratory. It is found that the species are mostly in the ground and metastable states during the atomic phase, but that ionization proceeds predominantly through thermal ionization of optically allowed states with excitation energies close to the ionization limit.« less

Gulf Petro Initiative

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fathi Boukadi

2011-02-05

In this report, technologies for petroleum production and exploration enhancement in deepwater and mature fields are developed through basic and applied research by: (1) Designing new fluids to efficiently drill deepwater wells that can not be cost-effectively drilled with current technologies. The new fluids will be heavy liquid foams that have low-density at shallow dept to avoid formation breakdown and high density at drilling depth to control formation pressure. The goal of this project is to provide industry with formulations of new fluids for reducing casing programs and thus well construction cost in deepwater development. (2) Studying the effects ofmore » flue gas/CO{sub 2} huff n puff on incremental oil recovery in Louisiana oilfields bearing light oil. An artificial neural network (ANN) model will be developed and used to map recovery efficiencies for candidate reservoirs in Louisiana. (3) Arriving at a quantitative understanding for the three-dimensional controlled-source electromagnetic (CSEM) geophysical response of typical Gulf of Mexico hydrocarbon reservoirs. We will seek to make available tools for the qualitative, rapid interpretation of marine CSEM signatures, and tools for efficient, three-dimensional subsurface conductivity modeling.« less

Highly durable piezo-electric energy harvester by a super toughened and flexible nanocomposite: effect of laponite nano-clay in poly(vinylidene fluoride)

NASA Astrophysics Data System (ADS)

Rahman, Wahida; Ghosh, Sujoy Kumar; Ranjan Middya, Tapas; Mandal, Dipankar

2017-09-01

A highly durable piezoelectric energy harvester is introduced by integrating the toughness and flexibility of a non-electrically poled, laponite nano-clay mineral-induced γ-phase (up to 98%) in a poly(vinylidene-fluoride) (PVDF) matrix by a simple solvent evaporation technique. Owing to a superior electromechanical coupling effect, PVDF/laponite nanocomposites retain excellent biomechanical energy harvesting capabilities under external vibration (as high as 6 V output voltage and 70 nA output current under a compressive force of 300 N) and charge storage properties under an external high electric field (maximum 0.8~ \\text{J} \\text{c}{{\\text{m}}-3} of discharged energy density at a breakdown strength of 302 MV m-1). As a proof of concept, the fabricated nanogenerator (NG) possesses a high output power density (~6.3 mW m-2) that directly drives several consumer electronics without using any storage system or batteries. It paves the way for potential applicability in next generation electronics, particularly as a self-powered device and to configure sustainable internet of things (IoT) sensor networks.

Interface engineering and reliability characteristics of hafnium dioxide with poly silicon gate and dual metal (ruthenium-tantalum alloy, ruthenium) gate electrode for beyond 65 nm technology

NASA Astrophysics Data System (ADS)

Kim, Young-Hee

Chip density and performance improvements have been driven by aggressive scaling of semiconductor devices. In both logic and memory applications, SiO 2 gate dielectrics has reached its physical limit, direct tunneling resulting from scaling down of dielectrics thickness. Therefore high-k dielectrics have attracted a great deal of attention from industries as the replacement of conventional SiO2 gate dielectrics. So far, lots of candidate materials have been evaluated and Hf-based high-k dielectrics were chosen to the promising materials for gate dielectrics. However, lots of issues were identified and more thorough researches were carried out on Hf-based high-k dielectrics. For instances, mobility degradation, charge trapping, crystallization, Fermi level pinning, interface engineering, and reliability studies. In this research, reliability study of HfO2 were explored with poly gate and dual metal (Ru-Ta alloy, Ru) gate electrode as well as interface engineering. Hard breakdown and soft breakdown were compared and Weibull slope of soft breakdown was smaller than that of hard breakdown, which led to a potential high-k scaling issue. Dynamic reliability has been studied and the combination of trapping and detrapping contributed the enhancement of lifetime projection. Polarity dependence was shown that substrate injection might reduce lifetime projection as well as it increased soft breakdown behavior. Interface tunneling mechanism was suggested with dual metal gate technology. Soft breakdown (l st breakdown) was mainly due to one layer breakdown of bi-layer structure. Low weibull slope was in part attributed to low barrier height of HfO 2 compared to interface layer. Interface layer engineering was thoroughly studied in terms of mobility, swing, and short channel effect using deep sub-micron MOSFET devices. In fact, Hf-based high-k dielectrics could be scaled down to below EOT of ˜10A and it successfully achieved the competitive performance goals. However, it is still necessary to understand what is intrinsic we can not change, or what is extrinsic one we can improve.

Process for High-Rate Fabrication of Alumina Nanotemplates

NASA Technical Reports Server (NTRS)

Myung, Nosang; Fleurial, Jean-Pierre; Yun, Minhee; West, William; Choi, Daniel

2007-01-01

An anodizing process, at an early stage of development at the time of reporting the information for this article, has shown promise as a means of fabricating alumina nanotemplates integrated with silicon wafers. Alumina nanotemplates are basically layers of alumina, typically several microns thick, in which are formed approximately regular hexagonal arrays of holes having typical diameters of the order of 10 to 100 nm. Interest in alumina nanotemplates has grown in recent years because they have been found to be useful as templates in the fabrication of nanoscale magnetic, electronic, optoelectronic, and other devices. The present anodizing process is attractive for the fabrication of alumina nanotemplates integrated with silicon wafers in two respects: (1) the process involves self-ordering of the holes; that is, the holes as formed by the process are spontaneously arranged in approximately regular hexagonal arrays; and (2) the rates of growth (that is, elongation) of the holes are high enough to make the process compatible with other processes used in the mass production of integrated circuits. In preparation for fabrication of alumina nanotemplates in this process, one first uses electron-beam evaporation to deposit thin films of titanium, followed by thin films of aluminum, on silicon wafers. Then the alumina nanotemplates are formed by anodizing the aluminum layers, as described below. In experiments in which the process was partially developed, the titanium films were 200 A thick and the aluminum films were 5 m thick. The aluminum films were oxidized to alumina, and the arrays of holes were formed by anodizing the aluminum in aqueous solutions of sulfuric and/or oxalic acid at room temperature (see figure). The diameters, spacings, and rates of growth of the holes were found to depend, variously, on the composition of the anodizing solution, the applied current, or the applied potential, as follows: In galvanostatically controlled anodizing, regardless of the chemical composition of the solution, relatively high current densities (50 to 100 mA/cm2) resulted in arrays of holes that were more nearly regular than were those formed at lower current densities. . The rates of elongation of the holes were found to depend linearly on the applied current density: the observed factor of proportionality was 1.2 (m/h)/(mA/cm2). For a given fixed current density and room temperature, the hole diameters were found to depend mainly on the chemical compositions of the anodizing solutions. The holes produced in sulfuric acid solutions were smaller than those produced in oxalic acid solutions. The arrays of holes produced in sulfuric acid were more ordered than were those produced in oxalic acid. . The breakdown voltage was found to decrease logarithmically with increasing concentration of sulfuric acid. The breakdown voltage was also found to decrease with temperature and to be accompanied by a decrease in hole diameter. The hole diameter was found to vary linearly with applied potential, with a slope of 2.1 nm/V. This slope differs from slopes (2.2 and 2.77 nm/V) reported for similar prior measurements on nanotemplates made from bulk aluminum. The differences among these slopes may be attributable to differences among impurities and defects in bulk and electron-beam-evaporated aluminum specimens.

Anomalous memory effect in the breakdown of low-pressure argon in a long discharge tube

DOE Office of Scientific and Technical Information (OSTI.GOV)

Meshchanov, A. V.; Korshunov, A. N.; Ionikh, Yu. Z., E-mail: y.ionikh@spbu.ru

2015-08-15

The characteristics of breakdown of argon in a long tube (with a gap length of 75 cm and diameter of 2.8 cm) at pressures of 1 and 5 Torr and stationary discharge currents of 5–40 mA were studied experimentally. The breakdown was initiated by paired positive voltage pulses with a rise rate of ∼10{sup 8}–10{sup 9} V/s and duration of ∼1–10 ms. The time interval between pairs was varied in the range of Τ ∼ 0.1–1 s, and that between pulses in a pair was varied from τ = 0.4 ms to ≈Τ/2. The aim of this work was tomore » detect and study the so-called “anomalous memory effect” earlier observed in breakdown in nitrogen. The effect consists in the dynamic breakdown voltage in the second pulse in a pair being higher than in the first pulse (in contrast to the “normal” memory effect, in which the relation between the breakdown voltages is opposite). It is found that this effect is observed when the time interval between pairs of pulses is such that the first pulse in a pair is in the range of the normal memory effect of the preceding pair (under the given conditions, Τ ≈ 0.1–0.4 s). In this case, at τ ∼ 10 ms, the breakdown voltage of the second pulse is higher than the reduced breakdown voltage of the first pulse. Optical observations of the ionization wave preceding breakdown in a long tube show that, in the range of the anomalous memory effect and at smaller values of τ, no ionization wave is detected before breakdown in the second pulse. A qualitative interpretation of the experimental results is given.« less

Temperature Distribution Within a Defect-Free Silicon Carbide Diode Predicted by a Computational Model

NASA Technical Reports Server (NTRS)

Kuczmarski, Maria A.; Neudeck, Philip G.

2000-01-01

Most solid-state electronic devices diodes, transistors, and integrated circuits are based on silicon. Although this material works well for many applications, its properties limit its ability to function under extreme high-temperature or high-power operating conditions. Silicon carbide (SiC), with its desirable physical properties, could someday replace silicon for these types of applications. A major roadblock to realizing this potential is the quality of SiC material that can currently be produced. Semiconductors require very uniform, high-quality material, and commercially available SiC tends to suffer from defects in the crystalline structure that have largely been eliminated in silicon. In some power circuits, these defects can focus energy into an extremely small area, leading to overheating that can damage the device. In an effort to better understand the way that these defects affect the electrical performance and reliability of an SiC device in a power circuit, the NASA Glenn Research Center at Lewis Field began an in-house three-dimensional computational modeling effort. The goal is to predict the temperature distributions within a SiC diode structure subjected to the various transient overvoltage breakdown stresses that occur in power management circuits. A commercial computational fluid dynamics computer program (FLUENT-Fluent, Inc., Lebanon, New Hampshire) was used to build a model of a defect-free SiC diode and generate a computational mesh. A typical breakdown power density was applied over 0.5 msec in a heated layer at the junction between the p-type SiC and n-type SiC, and the temperature distribution throughout the diode was then calculated. The peak temperature extracted from the computational model agreed well (within 6 percent) with previous first-order calculations of the maximum expected temperature at the end of the breakdown pulse. This level of agreement is excellent for a model of this type and indicates that three-dimensional computational modeling can provide useful predictions for this class of problem. The model is now being extended to include the effects of crystal defects. The model will provide unique insights into how high the temperature rises in the vicinity of the defects in a diode at various power densities and pulse durations. This information also will help researchers in understanding and designing SiC devices for safe and reliable operation in high-power circuits.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tewari, Somesh Vinayak, E-mail: somesh-vinayak@yahoo.com, E-mail: svtewari@barc.gov.in; Sharma, Archana; Mittal, K. C.

An experimental investigation of surface flashover characteristics of PMMA and POM is studied in compressed nitrogen gas environment with nitrogen as the background gas. The operating pressure range is from 1kg/cm{sup 2} to 4kg/cm{sup 2}. It is observed that the breakdown voltage of PMMA is higher than POM owing to a higher permittivity mismatch between POM- nitrogen interface as compared to the PMMA- nitrogen interface. The reduction in spacer efficiency with pressure for PMMA is 11% as compared to POM which shows a higher reduction of 18%. This paper further emphasizes on the role of energy level and density ofmore » charge carrier trapping centers for a reduced breakdown voltage in POM as compared to PMMA.« less

Optimized LWIR enhancement of nanosecond and femtosecond LIBS uranium emission

NASA Astrophysics Data System (ADS)

Akpovo, Codjo A.; Ford, Alan; Johnson, Lewis

2016-05-01

A carbon dioxide (CO2) transverse electrical breakdown in atmosphere (TEA), pulsed laser was used to enhance the laser-induced breakdown spectroscopy (LIBS) spectral signatures of uranium under nanosecond (ns) and femtosecond (fs) ablation. The peak areas of both ionic and neutral species increased by one order of magnitude for ns-ablation and two orders of magnitude for fs-ablation over LIBS when the CO2 TEA laser was used with samples of dried solutions of uranyl nitrate hexahydrate (UO2(NO3)2·6H2O) on silicon wafers. Electron temperature and density measurements show that the spectral emission improvement from using the TEA laser comes from plasma reheating.

Laser-induced breakdown spectroscopy using mid-infrared femtosecond pulses

DOE PAGES

Hartig, K. C.; Colgan, J.; Kilcrease, D. P.; ...

2015-07-30

Here, we report on a laser-induced breakdown spectroscopy (LIBS) experiment driven by mid-infrared (2.05-μm) fs pulses, in which time-resolved emission spectra of copper were studied. Ab-initio modeling is consistent with the results of new fs measurements at 2.05 μm and traditional 800-nm fs-LIBS. Ablation by mid-infrared fs pulses results in a plasma with a lower plasma density and temperature compared to fs-LIBS performed at shorter laser wavelength. LIBS driven by mid-infrared fs pulses results in a signal-to-background ratio ~50% greater and a signal-to-noise ratio ~40% lower than fs-LIBS at near-infrared laser wavelength.

Kinetic Simulations of Dense Plasma Focus Breakdown

NASA Astrophysics Data System (ADS)

Schmidt, A.; Higginson, D. P.; Jiang, S.; Link, A.; Povilus, A.; Sears, J.; Bennett, N.; Rose, D. V.; Welch, D. R.

2015-11-01

A dense plasma focus (DPF) device is a type of plasma gun that drives current through a set of coaxial electrodes to assemble gas inside the device and then implode that gas on axis to form a Z-pinch. This implosion drives hydrodynamic and kinetic instabilities that generate strong electric fields, which produces a short intense pulse of x-rays, high-energy (>100 keV) electrons and ions, and (in deuterium gas) neutrons. A strong factor in pinch performance is the initial breakdown and ionization of the gas along the insulator surface separating the two electrodes. The smoothness and isotropy of this ionized sheath are imprinted on the current sheath that travels along the electrodes, thus making it an important portion of the DPF to both understand and optimize. Here we use kinetic simulations in the Particle-in-cell code LSP to model the breakdown. Simulations are initiated with neutral gas and the breakdown modeled self-consistently as driven by a charged capacitor system. We also investigate novel geometries for the insulator and electrodes to attempt to control the electric field profile. The initial ionization fraction of gas is explored computationally to gauge possible advantages of pre-ionization which could be created experimentally via lasers or a glow-discharge. Prepared by LLNL under Contract DE-AC52-07NA27344.

200 kj copper foil fuses. Final report

DOE Office of Scientific and Technical Information (OSTI.GOV)

McClenahan, C.R.; Goforth, J.H.; Degnan, J.H.

1980-04-01

A 200-kJ, 50-kV capacitor bank has been discharged into 1-mil-thick copper foils immersed in fine glass beads. These foils ranged in length from 27 to 71 cm and in width from 15 to 40 cm. Voltage spikes of over 250 kV were produced by the resulting fuse behavior of the foil. Moreover, the current turned off at a rate that was over 6 times the initial bank dI/dt. Full widths at half maxima for the voltage and dI/dt spikes were about 0.5 microsec, with some as short as 300 nanosec. Electrical breakdown was prevented in all but one size fuzemore » with maximum applied fields of 7 kV/cm. Fuses that were split into two parallel sections have been tested, and the effects relative to one-piece fuses are much larger than would be expected on the basis of inductance differences alone. A resistivity model for copper foil fuses, which differs from previous work in that it includes a current density dependence, has been devised. Fuse behavior is predicted with reasonable accuracy over a wide range of foil sizes by a quasi-two-dimensional fuse code that incorporates this resistivity model. A variation of Maisonnier's method for predicting optimum fuze size has been derived. This method is valid if the risetime of the bank exceeds 3 microsec, in which case it can be expected to be applicable over a wide range of peak current densities.« less

Accoustic Localization of Breakdown in Radio Frequency Accelerating Cavities

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lane, Peter Gwin

Current designs for muon accelerators require high-gradient radio frequency (RF) cavities to be placed in solenoidal magnetic fields. These fields help contain and efficiently reduce the phase space volume of source muons in order to create a usable muon beam for collider and neutrino experiments. In this context and in general, the use of RF cavities in strong magnetic fields has its challenges. It has been found that placing normal conducting RF cavities in strong magnetic fields reduces the threshold at which RF cavity breakdown occurs. To aid the effort to study RF cavity breakdown in magnetic fields, it wouldmore » be helpful to have a diagnostic tool which can localize the source of breakdown sparks inside the cavity. These sparks generate thermal shocks to small regions of the inner cavity wall that can be detected and localized using microphones attached to the outer cavity surface. Details on RF cavity sound sources as well as the hardware, software, and algorithms used to localize the source of sound emitted from breakdown thermal shocks are presented. In addition, results from simulations and experiments on three RF cavities, namely the Aluminum Mock Cavity, the High-Pressure Cavity, and the Modular Cavity, are also given. These results demonstrate the validity and effectiveness of the described technique for acoustic localization of breakdown.« less

Optically reversible electrical soft-breakdown in wide-bandgap oxides—A factorial study

NASA Astrophysics Data System (ADS)

Zhou, Y.; Ang, D. S.; Kalaga, P. S.

2018-04-01

In an earlier work, we found that an electrical soft-breakdown region in wide-bandgap oxides, such as hafnium dioxide, silicon dioxide, etc., could be reversed when illuminated by white light. The effect is evidenced by a decrease in the breakdown leakage current, termed as a negative photoconductivity response. This finding raises the prospect for optical sensing applications based on these traditionally non-photo-responsive but ubiquitous oxide materials. In this study, we examine the statistical distribution for the rate of breakdown reversal as well as the influence of factors such as wavelength, light intensity, oxide stoichiometry (or oxygen content) and temperature on the reversal rate. The rate of breakdown reversal is shown to be best described by the lognormal distribution. Light in the range of ˜400-700 nm is found to have relatively little influence on the reversal rate. On the other hand, light intensity, oxygen content and temperature, each of them has a clear impact; a stronger light intensity, an oxide that is richer in oxygen content and a reduced temperature all speed up the reversal process substantially. These experimental results are consistent with the proposed phenomenological redox model involving photo-assisted recombination of the surrounding oxygen interstitials with vacancy defects in the breakdown path.

Acoustic localization of breakdown in radio frequency accelerating cavities

NASA Astrophysics Data System (ADS)

Lane, Peter

Current designs for muon accelerators require high-gradient radio frequency (RF) cavities to be placed in solenoidal magnetic fields. These fields help contain and efficiently reduce the phase space volume of source muons in order to create a usable muon beam for collider and neutrino experiments. In this context and in general, the use of RF cavities in strong magnetic fields has its challenges. It has been found that placing normal conducting RF cavities in strong magnetic fields reduces the threshold at which RF cavity breakdown occurs. To aid the effort to study RF cavity breakdown in magnetic fields, it would be helpful to have a diagnostic tool which can localize the source of breakdown sparks inside the cavity. These sparks generate thermal shocks to small regions of the inner cavity wall that can be detected and localized using microphones attached to the outer cavity surface. Details on RF cavity sound sources as well as the hardware, software, and algorithms used to localize the source of sound emitted from breakdown thermal shocks are presented. In addition, results from simulations and experiments on three RF cavities, namely the Aluminum Mock Cavity, the High-Pressure Cavity, and the Modular Cavity, are also given. These results demonstrate the validity and effectiveness of the described technique for acoustic localization of breakdown.

Amplitude−temporal characteristics of a supershort avalanche electron beam generated during subnanosecond breakdown in air and nitrogen

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tarasenko, V. F., E-mail: vft@loi.hcei.tsc.ru; Baksht, E. Kh.; Beloplotov, D. V.

2016-04-15

The amplitude−temporal characteristics of a supershort avalanche electron beam (SAEB) with an amplitude of up to 100 A, as well as of the breakdown voltage and discharge current, are studied experimentally with a picosecond time resolution. The waveforms of discharge and SAEB currents are synchronized with those of the voltage pulses. It is shown that the amplitude−temporal characteristics of the SAEB depend on the gap length and the designs of the gas diode and cathode. The mechanism for the generation of runaway electron beams in atmospheric-pressure gases is analyzed on the basis of the obtained experimental data.

Amplitude-temporal characteristics of a supershort avalanche electron beam generated during subnanosecond breakdown in air and nitrogen

NASA Astrophysics Data System (ADS)

Tarasenko, V. F.; Baksht, E. Kh.; Beloplotov, D. V.; Burachenko, A. G.; Lomaev, M. I.

2016-04-01

The amplitude-temporal characteristics of a supershort avalanche electron beam (SAEB) with an amplitude of up to 100 A, as well as of the breakdown voltage and discharge current, are studied experimentally with a picosecond time resolution. The waveforms of discharge and SAEB currents are synchronized with those of the voltage pulses. It is shown that the amplitude-temporal characteristics of the SAEB depend on the gap length and the designs of the gas diode and cathode. The mechanism for the generation of runaway electron beams in atmospheric-pressure gases is analyzed on the basis of the obtained experimental data.

Possible standoff detection of ionizing radiation using high-power THz electromagnetic waves

NASA Astrophysics Data System (ADS)

Nusinovich, Gregory S.; Sprangle, Phillip; Romero-Talamas, Carlos A.; Rodgers, John; Pu, Ruifeng; Kashyn, Dmytro G.; Antonsen, Thomas M., Jr.; Granatstein, Victor L.

2012-06-01

Recently, a new method of remote detection of concealed radioactive materials was proposed. This method is based on focusing high-power short wavelength electromagnetic radiation in a small volume where the wave electric field exceeds the breakdown threshold. In the presence of free electrons caused by ionizing radiation, in this volume an avalanche discharge can then be initiated. When the wavelength is short enough, the probability of having even one free electron in this small volume in the absence of additional sources of ionization is low. Hence, a high breakdown rate will indicate that in the vicinity of this volume there are some materials causing ionization of air. To prove this concept a 0.67 THz gyrotron delivering 200-300 kW power in 10 microsecond pulses is under development. This method of standoff detection of concealed sources of ionizing radiation requires a wide range of studies, viz., evaluation of possible range, THz power and pulse duration, production of free electrons in air by gamma rays penetrating through container walls, statistical delay time in initiation of the breakdown in the case of low electron density, temporal evolution of plasma structure in the breakdown and scattering of THz radiation from small plasma objects. Most of these issues are discussed in the paper.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ma, Beihai; Hu, Zhongqiang; Koritala, Rachel E.

Ceramic film capacitors with high dielectric constant and high breakdown strength hold special promise for applications demanding high power density. By means of chemical solution deposition, we deposited ≈2-μm-thick films of lanthanum-doped lead zirconate titanate (PLZT) on LaNiO3-buffered Ni (LNO/Ni) foils and platinized silicon (PtSi) substrates. The dielectric properties and energy storage performance of the resulting samples were determined under a high level of applied electric field. X-ray diffraction stress analysis revealed that PLZT on LNO/Ni bears a compressive stress of ≈370 MPa while PLZT on PtSi endures a tensile stress of ≈250 MPa. Compressive stress was found to leadmore » to heightened polarization, improved tunability, increased irreversible domain wall motion, and enhanced breakdown strength for PLZT deposited on the LNO/Ni as compared with the PtSi substrate. We observed a tunability of ≈55 and ≈40 % at room temperature under 100 kV/cm applied field, remanent polarization of ≈23.5 and ≈7.4 µC/cm^2, coercive electric field of ≈25.6 and ≈21.1 kV/cm, and dielectric breakdown strength of ≈2.6 and ≈1.5 MV/cm for PLZT deposited on LNO/Ni foils and PtSi substrates, respectively. A high recoverable energy density of ≈85 J/cm^3 and energy conversion efficiency of ≈65 % were measured on the PLZT film grown on LNO/Ni.« less

Dielectric performance of high permitivity nanocomposites: impact of polystyrene grafting on BaTiO 3 and TiO 2

DOE PAGES

Grabowski, Christopher A.; Fillery, Scott P.; Koerner, Hilmar; ...

2016-09-22

Polymer nanocomposites are a promising concept to improve energy storage density of capacitors, but realizing their hypothetical gains has proved challenging. The introduction of high permittivity fillers often leads to reduction in breakdown strength due to field exclusion, which intensifies the applied electric field within the polymer matrix near nanoparticle interfaces. This has prompted research in developing new nanoparticle functionalization chemistries and processing concepts to maximize particle separation. Herein, we compare the dielectric performance of blended nanocomposites to matrix free assemblies of hairy (polymer-grafted) nanoparticles (HNPs) that exhibit comparable overall morphology. The dielectric breakdown strength of polystyrene-grafted BaTiO3 (PS@BaTiO3) systemsmore » was over 40% greater than a blended nanocomposite with similar loading (~25% v/v BaTiO3). Hairy nanoparticles with TiO2 cores followed similar trends in breakdown strength as a function of inorganic loading up to 40% v/v. Dielectric loss for PS@BaTiO3 HNPs was 2-5 times lower than analogous blended films for a wide frequency spectrum (1 Hz to 100 kHz). For BaTiO3 content above 7% v/v, grafting the polymer chains to the nanoparticle significantly improved energy storage density and efficiency, likely due to the polymer canopy mitigating interfacial transport and restricting particle-particle hot-spots by establishing a finite minimum particle separation.« less

Multiple Interfacial Fe3O4@BaTiO3/P(VDF-HFP) Core-Shell-Matrix Films with Internal Barrier Layer Capacitor (IBLC) Effects and High Energy Storage Density.

PubMed

Zhou, Ling; Fu, Qiuyun; Xue, Fei; Tang, Xiahui; Zhou, Dongxiang; Tian, Yahui; Wang, Geng; Wang, Chaohong; Gou, Haibo; Xu, Lei

2017-11-22

Flexible nanocomposites composed of high dielectric constant fillers and polymer matrix have shown great potential for electrostatic capacitors and energy storage applications. To obtain the composited material with high dielectric constant and high breakdown strength, multi-interfacial composited particles, which composed of conductive cores and insulating shells and possessed the internal barrier layer capacitor (IBLC) effect, were adopted as fillers. Thus, Fe 3 O 4 @BaTiO 3 core-shell particles were prepared and loaded into the poly(vinylidene fluoride-co-hexafluoropropylene) (P(VDF-HFP)) polymer matrix. As the mass fraction of core-shell fillers increased from 2.5 wt % to 30 wt %, the dielectric constant of the films increased, while the loss tangent remained at a low level (<0.05 at 1 kHz). Both high electric displacement and high electric breakdown strength were achieved in the films with 10 wt % core-shell fillers loaded. The maximum energy storage density of 7.018 J/cm 3 was measured at 2350 kV/cm, which shows significant enhancement than those of the pure P(VDF-HFP) films and analogous composited films with converse insulating-conductive core-shell fillers. A Maxwell-Wagner capacitor model was also adopted to interpret the efficiency of IBLC effects on the suppressed loss tangent and the superior breakdown strength. This work explored an effective approach to prepare dielectric nanocomposites for energy storage applications experimentally and theoretically.

Dielectric performance of high permitivity nanocomposites: impact of polystyrene grafting on BaTiO 3 and TiO 2

DOE Office of Scientific and Technical Information (OSTI.GOV)

Grabowski, Christopher A.; Fillery, Scott P.; Koerner, Hilmar

Polymer nanocomposites are a promising concept to improve energy storage density of capacitors, but realizing their hypothetical gains has proved challenging. The introduction of high permittivity fillers often leads to reduction in breakdown strength due to field exclusion, which intensifies the applied electric field within the polymer matrix near nanoparticle interfaces. This has prompted research in developing new nanoparticle functionalization chemistries and processing concepts to maximize particle separation. Herein, we compare the dielectric performance of blended nanocomposites to matrix free assemblies of hairy (polymer-grafted) nanoparticles (HNPs) that exhibit comparable overall morphology. The dielectric breakdown strength of polystyrene-grafted BaTiO3 (PS@BaTiO3) systemsmore » was over 40% greater than a blended nanocomposite with similar loading (~25% v/v BaTiO3). Hairy nanoparticles with TiO2 cores followed similar trends in breakdown strength as a function of inorganic loading up to 40% v/v. Dielectric loss for PS@BaTiO3 HNPs was 2-5 times lower than analogous blended films for a wide frequency spectrum (1 Hz to 100 kHz). For BaTiO3 content above 7% v/v, grafting the polymer chains to the nanoparticle significantly improved energy storage density and efficiency, likely due to the polymer canopy mitigating interfacial transport and restricting particle-particle hot-spots by establishing a finite minimum particle separation.« less

The breakdown of coordinated decision making in distributed systems.

PubMed

Bearman, Christopher; Paletz, Susannah B F; Orasanu, Judith; Thomas, Matthew J W

2010-04-01

This article aims to explore the nature and resolution of breakdowns in coordinated decision making in distributed safety-critical systems. In safety-critical domains, people with different roles and responsibilities often must work together to make coordinated decisions while geographically distributed. Although there is likely to be a large degree of overlap in the shared mental models of these people on the basis of procedures and experience, subtle differences may exist. Study 1 involves using Aviation Safety Reporting System reports to explore the ways in which coordinated decision making breaks down between pilots and air traffic controllers and the way in which the breakdowns are resolved. Study 2 replicates and extends those findings with the use of transcripts from the Apollo 13 National Aeronautics and Space Administration space mission. Across both studies, breakdowns were caused in part by different types of lower-level breakdowns (or disconnects), which are labeled as operational, informational, or evaluative. Evaluative disconnects were found to be significantly harder to resolve than other types of disconnects. Considering breakdowns according to the type of disconnect involved appears to capture useful information that should assist accident and incident investigators. The current trend in aviation of shifting responsibilities and providing increasingly more information to pilots may have a hidden cost of increasing evaluative disconnects. The proposed taxonomy facilitates the investigation of breakdowns in coordinated decision making and draws attention to the importance of considering subtle differences between participants' mental models when considering complex distributed systems.

A study of metalized electrode self-clearing in electroactive polymer (EAP) based actuators

NASA Astrophysics Data System (ADS)

Ahmed, Saad; Ounaies, Zoubeida

2016-04-01

Electroactive polymer (EAP) based technologies have shown promise in areas such as artificial muscles, actuator, aerospace, medical and soft robotics. Still challenges remain such as low induced forces and defects-driven electrical breakdown, which impede the practical implementation of this technology. Multilayered or stacked configuration can address the low induced force issue whereas self-clearing can be a technique to improve breakdown limit of EAP based actuators. Self-clearing refers to the partial local breakdown of dielectric medium due to the presence of impurities, which in turn results in the evaporation of some of the metalized electrode. After this evaporation, the impurity is cleared and any current path would be safely cut off, which means the actuator continues to perform. It is a widely studied concept in the capacitor community, while it has not been studied much for EAP technologies. In this paper we report a systematic approach to precondition a silver-metalized electroactive polymer (EAP), more specifically P(VDF-TrFE-CTFE) terpolymer, using self-clearing concept. First, we show improvement in the dielectric breakdown strength of EAP based unimorph actuators after pre-clearing the impurities using low electric field (lower than dielectric breakdown of the terpolymer). Inspired by this improvement, we used Weibull statistics to systematically estimate the self-clearing/ preconditioning field needed to clear the defects. Then electrical breakdown experiments are conducted with and without preconditioning the samples to investigate its effect on the breakdown strength of the sample.

Tuning Phase Composition of Polymer Nanocomposites toward High Energy Density and High Discharge Efficiency by Nonequilibrium Processing.

PubMed

Jiang, Jianyong; Zhang, Xin; Dan, Zhenkang; Ma, Jing; Lin, Yuanhua; Li, Ming; Nan, Ce-Wen; Shen, Yang

2017-09-06

Polymer nanocomposite dielectrics with high energy density and low loss are major enablers for a number of applications in modern electronic and electrical industry. Conventional fabrication of nanocomposites by solution routes involves equilibrium process, which is slow and results in structural imperfections, hence high leakage current and compromised reliability of the nanocomposites. We propose and demonstrate that a nonequilibrium process, which synergistically integrates electrospinning, hot-pressing and thermal quenching, is capable of yielding nanocomposites of very high quality. In the nonequilibrium nanocomposites of poly(vinylidene fluoride-co-hexafluoropropylene) (P(VDF-HFP)) and BaTiO 3 nanoparticles (BTO_nps), an ultrahigh Weibull modulus β of ∼30 is achieved, which is comparable to the quality of the bench-mark biaxially oriented polypropylene (BOPP) fabricated with melt-extrusion process by much more sophisticated and expensive industrial apparatus. Favorable phase composition and small crystalline size are also induced by the nonequilibrium process, which leads to concomitant enhancement of electric displacement and breakdown strength of the nanocomposite hence a high energy density of ∼21 J/cm 3 . Study on the polarization behavior and phase transformation at high electric field indicates that BTO_nps could facilitate the phase transformation from α- to β-polymorph at low electric field.

On the possibility of many-body localization in a doped Mott insulator

PubMed Central

He, Rong-Qiang; Weng, Zheng-Yu

2016-01-01

Many-body localization (MBL) is currently a hot issue of interacting systems, in which quantum mechanics overcomes thermalization of statistical mechanics. Like Anderson localization of non-interacting electrons, disorders are usually crucial in engineering the quantum interference in MBL. For translation invariant systems, however, the breakdown of eigenstate thermalization hypothesis due to a pure many-body quantum effect is still unclear. Here we demonstrate a possible MBL phenomenon without disorder, which emerges in a lightly doped Hubbard model with very strong interaction. By means of density matrix renormalization group numerical calculation on a two-leg ladder, we show that whereas a single hole can induce a very heavy Nagaoka polaron, two or more holes will form bound pair/droplets which are all localized excitations with flat bands at low energy densities. Consequently, MBL eigenstates of finite energy density can be constructed as composed of these localized droplets spatially separated. We further identify the underlying mechanism for this MBL as due to a novel ‘Berry phase’ of the doped Mott insulator, and show that by turning off this Berry phase either by increasing the anisotropy of the model or by hand, an eigenstate transition from the MBL to a conventional quasiparticle phase can be realized. PMID:27752064

Leakage current conduction, hole injection, and time-dependent dielectric breakdown of n-4H-SiC MOS capacitors during positive bias temperature stress

NASA Astrophysics Data System (ADS)

Samanta, Piyas; Mandal, Krishna C.

2017-01-01

The conduction mechanism(s) of gate leakage current JG through thermally grown silicon dioxide (SiO2) films on the silicon (Si) face of n-type 4H-silicon carbide (4H-SiC) has been studied in detail under positive gate bias. It was observed that at an oxide field above 5 MV/cm, the leakage current measured up to 303 °C can be explained by Fowler-Nordheim (FN) tunneling of electrons from the accumulated n-4H-SiC and Poole-Frenkel (PF) emission of trapped electrons from the localized neutral traps located at ≈2.5 eV below the SiO2 conduction band. However, the PF emission current IPF dominates the FN electron tunneling current IFN at oxide electric fields Eox between 5 and 10 MV/cm and in the temperature ranging from 31 to 303 °C. In addition, we have presented a comprehensive analysis of injection of holes and their subsequent trapping into as-grown oxide traps eventually leading to time-dependent dielectric breakdown during electron injection under positive bias temperature stress (PBTS) in n-4H-SiC metal-oxide-silicon carbide structures. Holes were generated in the heavily doped n-type polycrystalline silicon (n+-polySi) gate (anode) as well as in the oxide bulk via band-to-band ionization by the hot-electrons depending on their energy and SiO2 film thickness at Eox between 6 and 10 MV/cm (prior to the intrinsic oxide breakdown field). Transport of hot electrons emitted via both FN and PF mechanisms was taken into account. On the premise of the hole-induced oxide breakdown model, the time- and charge-to-breakdown ( tBD and QBD ) of 8.5 to 47 nm-thick SiO2 films on n-4H-SiC were estimated at a wide range of temperatures. tBD follows the Arrhenius law with activation energies varying inversely with initial applied constant field Eox supporting the reciprocal field ( 1 /E ) model of breakdown irrespective of SiO2 film thicknesses. We obtained an excellent margin (6.66 to 6.33 MV/cm at 31 °C and 5.11 to 4.55 MV/cm at 303 °C) of normal operating field for a 10-year projected lifetime of 8.5 to 47 nm-thick SiO2 films on n-4H-SiC under positive bias on the n+-polySi gate. Furthermore, the projected maximum operating oxide field was little higher in metal gate devices compared to n+-polySi gate devices having an identically thick thermal SiO2 films under PBTS.

Hydrogen effects in duplex stainless steel welded joints - electrochemical studies

NASA Astrophysics Data System (ADS)

Michalska, J.; Łabanowski, J.; Ćwiek, J.

2012-05-01

In this work results on the influence of hydrogen on passivity and corrosion resistance of 2205 duplex stainless steel (DSS) welded joints are described. The results were discussed by taking into account three different areas on the welded joint: weld metal (WM), heat-affected zone (HAZ) and parent metal. The corrosion resistance was qualified with the polarization curves registered in a synthetic sea water. The conclusion is that, hydrogen may seriously deteriorate the passive film stability and corrosion resistance to pitting of 2205 DSS welded joints. The presence of hydrogen in passive films increases corrosion current density and decreases the potential of the film breakdown. It was also found that degree of susceptibility to hydrogen degradation was dependent on the hydrogen charging conditions. WM region has been revealed as the most sensitive to hydrogen action.

Experimental Study of Second-Mode Instabilities on a 7-Degree Cone at Mach 6

NASA Technical Reports Server (NTRS)

Rufer, Shann J.; Berridge, Dennis C.

2011-01-01

Experiments have been carried out in the NASA Langley Research Center 20-Inch Mach 6 Air Tunnel to measure the second-mode boundary-layer instability on a 7deg half-angle cone using high-frequency pressure sensors. Data were obtained with both blunt and sharp nosetips installed on the cone. The second-mode wave amplitudes were observed to saturate and then begin to decrease in the Langley tunnels, indicating wave breakdown. Pressure fluctuation measurements and thermocouple data indicated the location of transition along the cone at the different conditions tested. Comparisons between the power density spectra obtained during the current test and previous data from the Langley 15-Inch Mach 6 High Temperature Tunnel and the Boeing/AFOSR Mach 6 Quiet tunnel illustrate the effect of tunnel noise on instability growth and transition.

Significantly Enhanced Energy Density in Nanocomposite Capacitors Combining the TiO2 Nanorod Array with Poly(vinylidene fluoride).

PubMed

Yao, Lingmin; Pan, Zhongbin; Liu, Shaohui; Zhai, Jiwei; Chen, Haydn H D

2016-10-05

A novel inorganic/polymer nanocomposite, using 1-dimensional TiO 2 nanorod array as fillers (TNA) and poly(vinylidene fluoride) (PVDF) as matrix, has been successfully synthesized for the first time. A carefully designed process sequence includes several steps with the initial epitaxial growth of highly oriented TNA on the fluorine-doped tin oxide (FTO) conductive glass. Subsequently, PVDF is embedded into the nanorods by the spin-coating method followed by annealing and quenching processes. This novel structure with dispersive fillers demonstrates a successful compromise between the electric displacement and breakdown strength, resulting in a dramatic increase in the electric polarization which leads to a significant improvement on the energy density and discharge efficiency. The nanocomposites with various height ratios of fillers between the TNA and total film thickness were investigated by us. The results show that nanocomposite with 18% height ratio fillers obtains maximum increase in the energy density (10.62 J cm -3 ) at a lower applied electric field of 340 MV m -1 , and it also illustrates a higher efficiency (>85%) under the electric field less than 100 MV m -1 . Even when the electric field reached 340 MV m -1 , the efficiency of nanocomposites can still maintained at ∼70%. This energy density exceeds most of the previously reported TiO 2 -based nanocomposite values at such a breakdown strength, which provides another promising design for the next generation of dielectric nanocomposite material, by using the highly oriented nanorod array as fillers for the higher energy density capacitors. Additionally, the finite element simulation has been employed to analyze the distribution of electric fields and electric flux density to explore the inherent mechanism of the higher performance of the TNA/PVDF nanocomposites.

Battery-powered pulsed high density inductively coupled plasma source for pre-ionization in laboratory astrophysics experiments.

PubMed

Chaplin, Vernon H; Bellan, Paul M

2015-07-01

An electrically floating radiofrequency (RF) pre-ionization plasma source has been developed to enable neutral gas breakdown at lower pressures and to access new experimental regimes in the Caltech laboratory astrophysics experiments. The source uses a customized 13.56 MHz class D RF power amplifier that is powered by AA batteries, allowing it to safely float at 3-6 kV with the electrodes of the high voltage pulsed power experiments. The amplifier, which is capable of 3 kW output power in pulsed (<1 ms) operation, couples electrical energy to the plasma through an antenna external to the 1.1 cm radius discharge tube. By comparing the predictions of a global equilibrium discharge model with the measured scalings of plasma density with RF power input and axial magnetic field strength, we demonstrate that inductive coupling (rather than capacitive coupling or wave damping) is the dominant energy transfer mechanism. Peak ion densities exceeding 5 × 10(19) m(-3) in argon gas at 30 mTorr have been achieved with and without a background field. Installation of the pre-ionization source on a magnetohydrodynamically driven jet experiment reduced the breakdown time and jitter and allowed for the creation of hotter, faster argon plasma jets than was previously possible.

Enhanced energy density and thermostability in polyimide nanocomposites containing core-shell structured BaTiO3@SiO2 nanofibers

NASA Astrophysics Data System (ADS)

Wang, Junchuan; Long, Yunchen; Sun, Ying; Zhang, Xueqin; Yang, Hong; Lin, Baoping

2017-12-01

High energy density polymer nanocomposites with high-temperature resistance are quite desirable for film capacitors and many other power electronics. In this study, polyimide-based (PI) nanocomposite films containing the core-shell structured barium titanate@silicon dioxide (BT@SiO2) nanofibers have been successfully synthesized by the solution casting method. In the BT@SiO2/PI nanocomposite films, the dielectric permittivity as well as the breakdown strength increase significantly. The SiO2 shell layers with moderate dielectric permittivity could effectively mitigate the local field concentration induced by the large mismatch between the dielectric permittivity of BT and PI, which contributes to the enhancement of the breakdown strength of the PI nanocomposite films. As a result, the PI nanocomposite film filled with 3 vol% BT@SiO2 nanofibers exhibits a maximal energy density of 2.31 J cm-3 under the field of 346 kV/mm, which is 62% over the pristine PI (1.42 J cm-3 at 308 kV/mm) and about 200% greater than the best commercial polymer, i.e. biaxially oriented polypropylenes (BOPP) (≈1.2 J cm-3). The thermogravimetric analysis results indicate that the BT@SiO2/PI nanocomposite films have good thermal stability below 500 °C.

Electrical characterization of amorphous Al2O3 dielectric films on n-type 4H-SiC

NASA Astrophysics Data System (ADS)

Khosa, R. Y.; Thorsteinsson, E. B.; Winters, M.; Rorsman, N.; Karhu, R.; Hassan, J.; Sveinbjörnsson, E. Ö.

2018-02-01

We report on the electrical properties of Al2O3 films grown on 4H-SiC by successive thermal oxidation of thin Al layers at low temperatures (200°C - 300°C). MOS capacitors made using these films contain lower density of interface traps, are more immune to electron injection and exhibit higher breakdown field (5MV/cm) than Al2O3 films grown by atomic layer deposition (ALD) or rapid thermal processing (RTP). Furthermore, the interface state density is significantly lower than in MOS capacitors with nitrided thermal silicon dioxide, grown in N2O, serving as the gate dielectric. Deposition of an additional SiO2 film on the top of the Al2O3 layer increases the breakdown voltage of the MOS capacitors while maintaining low density of interface traps. We examine the origin of negative charges frequently encountered in Al2O3 films grown on SiC and find that these charges consist of trapped electrons which can be released from the Al2O3 layer by depletion bias stress and ultraviolet light exposure. This electron trapping needs to be reduced if Al2O3 is to be used as a gate dielectric in SiC MOS technology.

Impacts of drought and crayfish invasion on stream ecosystem structure and function

USGS Publications Warehouse

Magoulick, Daniel D.

2014-01-01

Drought and seasonal drying can be important disturbance events in many small streams, leading to intermittent or isolated habitats. Many small streams contain crayfish populations that are often keystone or dominant species in these systems. I conducted an experiment in stream mesocosms to examine the effects of drought and potential ecological redundancy of a native and invasive crayfish species. I examined the effects of drought (drought or control) and crayfish presence (none, native crayfish Orconectes eupunctus or invasive crayfish Orconectes neglectus) on stream mesocosm structure and function (leaf breakdown, community metabolism, periphyton, sediment and chironomid densities) in a fully factorial design. Each mesocosm contained a deep and shallow section, and drought treatments had surface water present (5-cm depth) in deep sections where tiles and leaf packs were placed. Drought and crayfish presence did not interact for any response variable. Drought significantly reduced leaf breakdown, and crayfish presence significantly increased leaf breakdown. However, the native and invasive crayfish species did not differ significantly in their effects on leaf breakdown. Drought significantly reduced primary production and community respiration overall, whereas crayfish presence did not significantly affect primary production and community respiration. Neither drought nor crayfish presence significantly affected periphyton overall. However, drought significantly reduced autotrophic index (AI), and crayfish presence increased AI. Inorganic sediment and chironomid density were not affected by drought, but both were significantly reduced by crayfish presence. O. eupunctus reduced AI and sediment more than O. neglectus did. Neither drought nor crayfish species significantly affected crayfish growth or survival. Drought can have strong effects on ecosystem function, but weaker effects on benthic structure. Crayfish can have strong effects on ecosystem structure and function regardless of drought. In stream mesocosms, native and invasive crayfish species appeared largely ecologically redundant, although subtle differences in crayfish effects could cascade throughout the food web, and further research is needed to address this question. 

Amorphous Boron Nitride: A Universal, Ultrathin Dielectric for 2D Nanoelectronics (Postprint)

DTIC Science & Technology

2015-03-21

the C-AFM technique using the linear breakdown method when the current reaches 1 nA. [ 44 ] The breakdown is characterized by a sharp increase in...423 . [15] K. Watanabe , T. Taniguchi , H. Kanda , Nat. Mater. 2004 , 3 , 404 . [16] A. Soltani , A. Talbi , V. Mortet , A...Phys. Lett. 2011 , 99 , 243114 . [36] Y. Hattori , T. Taniguchi , K. Watanabe , K. Nagashio , ACS Nano 2014 , 9 , 916 . [37] S. N

Continuum modeling of charging process and piezoelectricity of ferroelectrets

NASA Astrophysics Data System (ADS)

Xu, Bai-Xiang; von Seggern, Heinz; Zhukov, Sergey; Gross, Dietmar

2013-09-01

Ferroelectrets in the form of electrically charged micro-porous foams exhibit a very large longitudinal piezoelectric coefficient d33. The structure has hence received wide application interests as sensors particularly in acoustic devices. During charging process, electrical breakdown (Paschen breakdown) takes place in the air pores of the foam and introduces free charge pairs. These charges are separated by electrostatic forces and relocated at the interfaces between the polymer and the electrically broken-down medium, where they are trapped quasistatically. The development of this trapped charge density along the interfaces is key for enabling the piezoelectricity of ferroelectrets. In this article, an internal variable based continuum model is proposed to calculate the charge density development at the interfaces, whereas a Maxwell stress based electromechanical model is used for the bulk behavior, i.e., of the polymer and of the medium where the Paschen breakdown takes place. In the modeling, the electrostatic forces between the separated charge pairs are included, as well as the influence of deformation of the solid layers. The material models are implemented in a nonlinear finite element scheme, which allows a detailed analysis of different geometries. A ferroelectret unit with porous expanded polytetrafluoroethylene (ePTFE) surrounded by fluorinated ethylene propylene is studied first. The simulated hysteresis curves of charge density at the surfaces and the calculated longitudinal piezoelectric constant are in good agreement with experimental results. Simulations show a strong dependency of the interface charge development and thus the remnant charges on the thicknesses of the layers and the permittivity of the materials. According to the calculated relation between d33 and the Young's modulus of ePTFE, the value of the Young's modulus of ePTFE is identified to be around 0.75 MPa, which lies well in the predicted range of 0.45 to 0.80 MPa, determined from the dielectric resonance spectra in the work of Zhang et al. [X. Q. Zhang et al., J. Appl. Phys. 108, 064113 (2010)]. To show the potential of the models, it is also applied to simulation of ferroelectrets with a lens shape. The results indicate that the electrical breakdown happens in a sequential manner, and the local piezoelectric coefficient varies with position. Thereby, the middle point on the surface exhibits the maximum d33. The simulation results obtained by the proposed models will provide insight for device optimization.

Charging and breakdown in amorphous dielectrics: Phenomenological modeling approach and applications

NASA Astrophysics Data System (ADS)

Palit, Sambit

Amorphous dielectrics of different thicknesses (nm to mm) are used in various applications. Low temperature processing/deposition of amorphous thin-film dielectrics often result in defect-states or electronic traps. These traps are responsible for increased leakage currents and bulk charge trapping in many associated applications. Additional defects may be generated during regular usage, leading to electrical breakdown. Increased leakage currents, charge trapping and defect generation/breakdown are important and pervasive reliability concerns in amorphous dielectrics. We first explore the issue of charge accumulation and leakage in amorphous dielectrics. Historically, charge transport in amorphous dielectrics has been presumed, depending on the dielectric thickness, to be either bulk dominated (Frenkel-Poole (FP) emission) or contact dominated (Fowler-Nordheim tunneling). We develop a comprehensive dielectric charging modeling framework which solves for the transient and steady state charge accumulation and leakage currents in an amorphous dielectric, and show that for intermediate thickness dielectrics, the conventional assumption of FP dominated current transport is incorrect, and may lead to false extraction of dielectric parameters. We propose an improved dielectric characterization methodology based on an analytical approximation of our model. Coupled with ab-initio computed defect levels, the dielectric charging model explains measured leakage currents more accurately with lesser empiricism. We study RF-MEMS capacitive switches as one of the target applications of intermediate thickness amorphous dielectrics. To achieve faster analysis and design of RF-MEMS switches in particular, and electro-mechanical actuators in general, we propose a set of fundamental scaling relationships which are independent of specific physical dimensions and material properties; the scaling relationships provide an intrinsic classification of all electro-mechanical actuators. However, RF-MEMS capacitive switches are plagued by the reliability issue of temporal shifts of actuation voltages due to dielectric charge accumulation, often resulting in failure due to membrane stiction. Using the dielectric charging model, we show that in spite of unpredictable roughness of deposited dielectrics, there are predictable shifts in actuation voltages due to dielectric charging in RF-MEMS switches. We also propose a novel non-obtrusive, non-contact, fully electronic resonance based technique to characterize charging driven actuation shifts in RF-MEMS switches which overcomes limitations in conventionally used methods. Finally, we look into the issue of defect generation and breakdown in thick polymer dielectrics. Polymer materials often face premature electrical breakdown due to high electric fields and frequencies, and exposure to ambient humidity conditions. Using a field-driven correlated defect generation model, coupled with a model for temperature rise due to dielectric heating at AC stresses, we explain measured trends in time-to-breakdown and breakdown electric fields in polymer materials. Using dielectric heating we are able to explain the observed lifetime and dielectric strength reduction with increasing dielectric thicknesses. Performing lifetime measurements after exposure to controlled humidity conditions, we find that moisture ingress into a polymer material reduces activation barriers for chain breakage and increases dielectric heating. Overall, this thesis develops a comprehensive framework of dielectric charging, leakage and degradation of insulators of different thicknesses that have broad applications in multiple technologies.

Mechanism of oxide thickness and temperature dependent current conduction in n+-polySi/SiO2/p-Si structures — a new analysis

NASA Astrophysics Data System (ADS)

Samanta, Piyas

2017-10-01

The conduction mechanism of gate leakage current through thermally grown silicon dioxide (SiO2) films on (100) p-type silicon has been investigated in detail under negative bias on the degenerately doped n-type polysilicon (n+-polySi) gate. The analysis utilizes the measured gate current density J G at high oxide fields E ox in 5.4 to 12 nm thick SiO2 films between 25 and 300 °C. The leakage current measured up to 300 °C was due to Fowler-Nordheim (FN) tunneling of electrons from the accumulated n +-polySi gate in conjunction with Poole Frenkel (PF) emission of trapped-electrons from the electron traps located at energy levels ranging from 0.6 to 1.12 eV (depending on the oxide thickness) below the SiO2 conduction band (CB). It was observed that PF emission current I PF dominates FN electron tunneling current I FN at oxide electric fields E ox between 6 and 10 MV/cm and throughout the temperature range studied here. Understanding of the mechanism of leakage current conduction through SiO2 films plays a crucial role in simulation of time-dependent dielectric breakdown (TDDB) of metaloxide-semiconductor (MOS) devices and to precisely predict the normal operating field or applied gate voltage for lifetime projection of the MOS integrated circuits.

Performance and Reliability of Solid Tantalum Capacitors at Cryogenic Conditions

NASA Technical Reports Server (NTRS)

Teverovsky, Alexander

2006-01-01

Performance of different types of solid tantalum capacitors was evaluated at room and low temperatures, down to 15 K. The effect of temperature on frequency dependencies of capacitance, effective series resistances (ESR), leakage currents, and breakdown voltages has been investigated and analyzed. To assess thermo-mechanical robustness of the parts, several groups of loose capacitors and those soldered on FR4 boards were subjected to multiple (up to 500) temperature cycles between room temperature and 77 K. Experiments and mathematical modeling have shown that degradation in tantalum capacitors at low temperatures is mostly due to increasing resistance of the manganese cathode layer, resulting in substantial decrease of the roll-off frequency. Absorption currents follow a power law, I approximately t(sup -m), with the exponent m varying from 0.8 to 1.1. These currents do not change significantly at cryogenic conditions and the value of the exponent remains the same down to 15 K. Variations of leakage currents with voltage can be described by Pool-Frenkel and Schottky mechanisms of conductivity, with the Schottky mechanism prevailing at cryogenic conditions. Breakdown voltages of tantalum capacitors increase and the probability of scintillations decreases at cryogenic temperatures. However, breakdown voltages measured during surge current testing decrease at liquid nitrogen (LN) compared to room-temperature conditions. Results of temperature cycling suggest that tantalum capacitors are capable of withstanding multiple exposures to cryogenic conditions, but the probability of failures varies for different part types.

Effect of whole-body vibration on bone properties in aging mice.

PubMed

Wenger, Karl H; Freeman, James D; Fulzele, Sadanand; Immel, David M; Powell, Brian D; Molitor, Patrick; Chao, Yuh J; Gao, Hong-Sheng; Elsalanty, Mohammed; Hamrick, Mark W; Isales, Carlos M; Yu, Jack C

2010-10-01

Recent studies suggest that whole-body vibration (WBV) can improve measures of bone health for certain clinical conditions and ages. In the elderly, there also is particular interest in assessing the ability of physical interventions such as WBV to improve coordination, strength, and movement speed, which help prevent falls and fractures and maintain ambulation for independent living. The current study evaluated the efficacy of WBV in an aging mouse model. Two levels of vibration--0.5 and 1.5g--were applied at 32Hz to CB57BL/6 male mice (n=9 each) beginning at age 18 months and continuing for 12 weeks, 30 min/day, in a novel pivoting vibration device. Previous reports indicate that bone parameters in these mice begin to decrease substantially at 18 months, equivalent to mid-fifties for humans. Micro-computed tomography (micro-CT) and biomechanical assessments were made in the femur, radius, and lumbar vertebra to determine the effect of these WBV magnitudes and durations in the aging model. Sera also were collected for analysis of bone formation and breakdown markers. Mineralizing surface and cell counts were determined histologically. Bone volume in four regions of the femur did not change significantly, but there was a consistent shift toward higher mean density in the bone density spectrum (BDS), with the two vibration levels producing similar results. This new parameter represents an integral of the conventional density histogram. The amount of high density bone statistically improved in the head, neck, and diaphysis. Biomechanically, there was a trend toward greater stiffness in the 1.5 g group (p=0.139 vs. controls in the radius), and no change in strength. In the lumbar spine, no differences were seen due to vibration. Both vibration groups significantly reduced pyridinoline crosslinks, a collagen breakdown marker. They also significantly increased dynamic mineralization, MS/BS. Furthermore, osteoclasts were most numerous in the 1.5 g group (p≤ 0.05). These findings suggest that some benefits of WBV found in previous studies of young and mature rodent models may extend to an aging population. Density parameters indicated 0.5 g was more effective than 1.5 g. Serological markers, by contrast, favored 1.5 g, while biomechanically and histologically the results were mixed. Although the purported anabolic effect of WBV on bone homeostasis may depend on location and the parameter of interest, this emerging therapy at a minimum does not appear to compromise bone health by the measures studied here. Copyright © 2010 Elsevier Inc. All rights reserved.

Laser-initiated channels for ion transport: breakdown and channel evolution

DOE Office of Scientific and Technical Information (OSTI.GOV)

Olsen, J.N.; Baker, L.

1981-05-01

The electrical breakdown and discharge evolution in CO/sub 2/ laser-heated molecular gases has been studied. With the laser tuned to a vibrational mode of NH/sub 3/, C/sub 2/H/sub 4/, CH/sub 2/CHCN, or CH/sub 3/OH the breakdown potential decreases as much as 10-fold for laser pulse energies up to 35 J/cm/sup 2/. The subsequent 50--142-cm discharges are straight, stable, and reproducible. Analogous tests in D/sub 2/ and air yield only a small alteration of breakdown potential and do not cause a straight discharge. The expansion of the initial laser-heated gas has been modeled by the CHARTB hydrocode with the addition ofmore » the NH/sub 3/ equation of state in tabular and analytic form to that code. The breakdown characteristics and initial expansion stage confirm the earlier calculation of laser heating to 1900--2100 /sup 0/K. Experimental observations of the discharge evolution in NH/sub 3/ have measured (1) the radial expansion velocity by streak-camera photography of the H/sub ..beta../ emission zone, (2) the plasma temperature by the Niv/Niii line-ratio method, and (3) the electron-density profile by holographic interferometry. The central zone of the channel is heated to 5.5 eV and expands with a radial velocity of 1.0--1.2 mm/..mu..s for the case of a 27-kA discharge in 20 Torr of NH/sub 3/. Preliminary hydrocode simulations of the discharge show qualitative agreement with observations.« less

Investigation of the delay time distribution of high power microwave surface flashover

NASA Astrophysics Data System (ADS)

Foster, J.; Krompholz, H.; Neuber, A.

2011-01-01

Characterizing and modeling the statistics associated with the initiation of gas breakdown has proven to be difficult due to a variety of rather unexplored phenomena involved. Experimental conditions for high power microwave window breakdown for pressures on the order of 100 to several 100 torr are complex: there are little to no naturally occurring free electrons in the breakdown region. The initial electron generation rate, from an external source, for example, is time dependent and so is the charge carrier amplification in the increasing radio frequency (RF) field amplitude with a rise time of 50 ns, which can be on the same order as the breakdown delay time. The probability of reaching a critical electron density within a given time period is composed of the statistical waiting time for the appearance of initiating electrons in the high-field region and the build-up of an avalanche with an inherent statistical distribution of the electron number. High power microwave breakdown and its delay time is of critical importance, since it limits the transmission through necessary windows, especially for high power, high altitude, low pressure applications. The delay time distribution of pulsed high power microwave surface flashover has been examined for nitrogen and argon as test gases for pressures ranging from 60 to 400 torr, with and without external UV illumination. A model has been developed for predicting the discharge delay time for these conditions. The results provide indications that field induced electron generation, other than standard field emission, plays a dominant role, which might be valid for other gas discharge types as well.

High-Density Quantum Sensing with Dissipative First Order Transitions

NASA Astrophysics Data System (ADS)

Raghunandan, Meghana; Wrachtrup, Jörg; Weimer, Hendrik

2018-04-01

The sensing of external fields using quantum systems is a prime example of an emergent quantum technology. Generically, the sensitivity of a quantum sensor consisting of N independent particles is proportional to √{N }. However, interactions invariably occurring at high densities lead to a breakdown of the assumption of independence between the particles, posing a severe challenge for quantum sensors operating at the nanoscale. Here, we show that interactions in quantum sensors can be transformed from a nuisance into an advantage when strong interactions trigger a dissipative phase transition in an open quantum system. We demonstrate this behavior by analyzing dissipative quantum sensors based upon nitrogen-vacancy defect centers in diamond. Using both a variational method and a numerical simulation of the master equation describing the open quantum many-body system, we establish the existence of a dissipative first order transition that can be used for quantum sensing. We investigate the properties of this phase transition for two- and three-dimensional setups, demonstrating that the transition can be observed using current experimental technology. Finally, we show that quantum sensors based on dissipative phase transitions are particularly robust against imperfections such as disorder or decoherence, with the sensitivity of the sensor not being limited by the T2 coherence time of the device. Our results can readily be applied to other applications in quantum sensing and quantum metrology where interactions are currently a limiting factor.

High-Density Quantum Sensing with Dissipative First Order Transitions.

PubMed

Raghunandan, Meghana; Wrachtrup, Jörg; Weimer, Hendrik

2018-04-13

The sensing of external fields using quantum systems is a prime example of an emergent quantum technology. Generically, the sensitivity of a quantum sensor consisting of N independent particles is proportional to sqrt[N]. However, interactions invariably occurring at high densities lead to a breakdown of the assumption of independence between the particles, posing a severe challenge for quantum sensors operating at the nanoscale. Here, we show that interactions in quantum sensors can be transformed from a nuisance into an advantage when strong interactions trigger a dissipative phase transition in an open quantum system. We demonstrate this behavior by analyzing dissipative quantum sensors based upon nitrogen-vacancy defect centers in diamond. Using both a variational method and a numerical simulation of the master equation describing the open quantum many-body system, we establish the existence of a dissipative first order transition that can be used for quantum sensing. We investigate the properties of this phase transition for two- and three-dimensional setups, demonstrating that the transition can be observed using current experimental technology. Finally, we show that quantum sensors based on dissipative phase transitions are particularly robust against imperfections such as disorder or decoherence, with the sensitivity of the sensor not being limited by the T_{2} coherence time of the device. Our results can readily be applied to other applications in quantum sensing and quantum metrology where interactions are currently a limiting factor.

Temperature effect on laser-induced breakdown spectroscopy spectra of molten and solid salts

NASA Astrophysics Data System (ADS)

Hanson, Cynthia; Phongikaroon, Supathorn; Scott, Jill R.

2014-07-01

Laser-induced breakdown spectroscopy (LIBS) has been investigated as a potential analytical tool to improve operations and safeguards for electrorefiners, such as those used in processing spent nuclear fuel. This study set out to better understand the effect of sample temperature and physical state on LIBS spectra of molten and solid salts by building calibration curves of cerium and assessing self-absorption, plasma temperature, electron density, and local thermal equilibrium (LTE). Samples were composed of a LiCl-KCl eutectic salt, an internal standard of MnCl2, and varying concentrations of CeCl3 (0.1, 0.3, 0.5, 0.8, and 1.0 wt.% Ce) under different temperatures (773, 723, 673, 623, and 573 K). Analysis of salts in their molten form is preferred as plasma plumes from molten samples experienced less self-absorption, less variability in plasma temperature, and higher clearance of the minimum electron density required for local thermal equilibrium. These differences are attributed to plasma dynamics as a result of phase changes. Spectral reproducibility was also better in the molten state due to sample homogeneity.

Lowering threshold energy for femtosecond laser pulse photodisruption through turbid media using adaptive optics

NASA Astrophysics Data System (ADS)

Hansen, A.; Ripken, Tammo; Krueger, Ronald R.; Lubatschowski, Holger

2011-03-01

Focussed femtosecond laser pulses are applied in ophthalmic tissues to create an optical breakdown and therefore a tissue dissection through photodisruption. The threshold irradiance for the optical breakdown depends on the photon density in the focal volume which can be influenced by the pulse energy, the size of the irradiated area (focus), and the irradiation time. For an application in the posterior eye segment the aberrations of the anterior eye elements cause a distortion of the wavefront and therefore an increased focal volume which reduces the photon density and thus raises the required energy for surpassing the threshold irradiance. The influence of adaptive optics on lowering the pulse energy required for photodisruption by refining a distorted focus was investigated. A reduction of the threshold energy can be shown when using adaptive optics. The spatial confinement with adaptive optics furthermore raises the irradiance at constant pulse energy. The lowered threshold energy allows for tissue dissection with reduced peripheral damage. This offers the possibility for moving femtosecond laser surgery from corneal or lental applications in the anterior eye to vitreal or retinal applications in the posterior eye.

Distinctive electrical properties in sandwich-structured Al2O3/low density polyethylene nanocomposites

NASA Astrophysics Data System (ADS)

Wang, Si-Jiao; Zha, Jun-Wei; Li, Wei-Kang; Dang, Zhi-Min

2016-02-01

The sandwich-structured Al2O3/low density polyethylene (Al2O3/LDPE) nanocomposite dielectrics consisting of layer-by-layer with different concentration Al2O3 loading were prepared by melt-blending and following hot pressing method. The space charge distribution from pulsed electro-acoustic method and breakdown strength of the nanocomposites were investigated. Compared with the single-layer Al2O3/LDPE nanocomposites, the sandwich-structured nanocomposites remarkably suppressed the space charge accumulation and presented higher breakdown strength. The charges in the sandwich-structured nanocomposites decayed much faster than that in the single-layer nanocomposites, which was attributed to an effective electric field caused by the formation of the interfacial space charges. The energy depth of shallow and deep traps was estimated as 0.73 eV and 1.17 eV in the sandwich-structured nanocomposites, respectively, according to the thermal excitation theoretical model we proposed. This work provides an attractive strategy of design and fabrication of polymer nanocomposites with excellent space charge suppression.

Fabrication of Solid-State Multilayer Glass Capacitors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wilke, Rudeger H. T.; Brown-Shaklee, Harlan James; Casias, Adrian L.

Alkali-free glasses show immense promise for the development of high-energy density capacitors. The high breakdown strengths on single-layer sheets of glass suggest the potential for improved energy densities over existing state-of-the art polymer capacitors. In this paper, we demonstrate the ability to package thin glass to make solid-state capacitors. Individual layers are bonded using epoxy, leading to capacitors that exhibit stable operation over the temperature range -55 °C to +65 °C. Here, this fabrication approach is scalable and allows for proof testing individual layers prior to incorporation of the stack, providing a blueprint for the fabrication of high-energy density capacitors.

Fabrication of Solid-State Multilayer Glass Capacitors

DOE PAGES

Wilke, Rudeger H. T.; Brown-Shaklee, Harlan James; Casias, Adrian L.; ...

2017-07-31

Alkali-free glasses show immense promise for the development of high-energy density capacitors. The high breakdown strengths on single-layer sheets of glass suggest the potential for improved energy densities over existing state-of-the art polymer capacitors. In this paper, we demonstrate the ability to package thin glass to make solid-state capacitors. Individual layers are bonded using epoxy, leading to capacitors that exhibit stable operation over the temperature range -55 °C to +65 °C. Here, this fabrication approach is scalable and allows for proof testing individual layers prior to incorporation of the stack, providing a blueprint for the fabrication of high-energy density capacitors.

Energy dissipation on ion-accelerator grids during high-voltage breakdown

DOE Office of Scientific and Technical Information (OSTI.GOV)

Menon, M.M.; Ponte, N.S.

1981-01-01

The effects of stored energy in the system capacitance across the accelerator grids during high voltage vacuum breakdown are examined. Measurements were made of the current flow and the energy deposition on the grids during breakdown. It is shown that only a portion (less than or equal to 40 J) of the total stored energy (congruent to 100 J) is actually dissipated on the grids. Most of the energy is released during the formation phase of the vacuum arc and is deposited primarily on the most positive grid. Certain abnormal situations led to energy depositions of about 200 J onmore » the grid, but the ion accelerator endured them without exhibiting any deterioration in performance.« less

Strong emission from nano-iron using laser-induced breakdown spectroscopy technique

NASA Astrophysics Data System (ADS)

Rashid, F. F.; ELSherbini, A. M.; Al-Muhamady, A.

2014-06-01

In this paper, we report a strong enhanced emission from laser produced plasma in air from iron oxide nano-material in comparison with the corresponding bulk samples. The enhancement strength differs with different Nd:YAG laser harmonics wavelengths. The analysis showed that such enhancement increased exponentially with the plasma evolution time, while it declines as the laser fluence increased. Experimental data analysis clearly showed that the observed enhancement is mainly associated with the change in the plasma electron density. We claim that this strong enhanced optical emission from laser produced plasma is due to the surface plasmon resonant excitation preferably on nano-oxide materials. Such experimental findings could improve the laser-induced breakdown spectroscopy sensitivity down to extremely low concentrations.

On- and off-axis spectral emission features from laser-produced gas breakdown plasmas

NASA Astrophysics Data System (ADS)

Harilal, S. S.; Skrodzki, P. J.; Miloshevsky, A.; Brumfield, B. E.; Phillips, M. C.; Miloshevsky, G.

2017-06-01

Laser-heated gas breakdown plasmas or sparks emit profoundly in the ultraviolet and visible region of the electromagnetic spectrum with contributions from ionic, atomic, and molecular species. Laser created kernels expand into a cold ambient with high velocities during their early lifetime followed by confinement of the plasma kernel and eventually collapse. However, the plasma kernels produced during laser breakdown of gases are also capable of exciting and ionizing the surrounding ambient medium. Two mechanisms can be responsible for excitation and ionization of the surrounding ambient: photoexcitation and ionization by intense ultraviolet emission from the sparks produced during the early times of their creation and/or heating by strong shocks generated by the kernel during its expansion into the ambient. In this study, an investigation is made on the spectral features of on- and off-axis emission of laser-induced plasma breakdown kernels generated in atmospheric pressure conditions with an aim to elucidate the mechanisms leading to ambient excitation and emission. Pulses from an Nd:YAG laser emitting at 1064 nm with a pulse duration of 6 ns are used to generate plasma kernels. Laser sparks were generated in air, argon, and helium gases to provide different physical properties of expansion dynamics and plasma chemistry considering the differences in laser absorption properties, mass density, and speciation. Point shadowgraphy and time-resolved imaging were used to evaluate the shock wave and spark self-emission morphology at early and late times, while space and time resolved spectroscopy is used for evaluating the emission features and for inferring plasma physical conditions at on- and off-axis positions. The structure and dynamics of the plasma kernel obtained using imaging techniques are also compared to numerical simulations using the computational fluid dynamics code. The emission from the kernel showed that spectral features from ions, atoms, and molecules are separated in time with early time temperatures and densities in excess of 35 000 K and 4 × 1018/cm3 with an existence of thermal equilibrium. However, the emission from the off-kernel positions from the breakdown plasmas showed enhanced ultraviolet radiation with the presence of N2 bands and is represented by non-local thermodynamic equilibrium (non-LTE) conditions. Our results also highlight that the ultraviolet radiation emitted during the early time of spark evolution is the predominant source of the photo-excitation of the surrounding medium.

On- and off-axis spectral emission features from laser-produced gas breakdown plasmas

DOE Office of Scientific and Technical Information (OSTI.GOV)

Harilal, S. S.; Skrodzki, P. J.; Miloshevsky, A.

Laser-heated gas breakdown plasmas or sparks emit profoundly in the ultraviolet and visible region of the electromagnetic spectrum with contributions from ionic, atomic, and molecular species. Laser created kernels expand into a cold ambient with high velocities during its early lifetime followed by confinement of the plasma kernel and eventually collapse. However, the plasma kernels produced during laser breakdown of gases are also capable of exciting and ionizing the surrounding ambient medium. Two mechanisms can be responsible for excitation and ionization of surrounding ambient: viz. photoexcitation and ionization by intense ultraviolet emission from the sparks produced during the early timesmore » of its creation and/or heating by strong shocks generated by the kernel during its expansion into the ambient. In this study, an investigation is made on the spectral features of on- and off-axis emission features of laser-induced plasma breakdown kernels generated in atmospheric pressure conditions with an aim to elucidate the mechanisms leading to ambient excitation and emission. Pulses from an Nd:YAG laser emitting at 1064 nm with 6 ns pulse duration are used to generate plasma kernels. Laser sparks were generated in air, argon, and helium gases to provide different physical properties of expansion dynamics and plasma chemistry considering the differences in laser absorption properties, mass density and speciation. Point shadowgraphy and time-resolved imaging were used to evaluate the shock wave and spark self-emission morphology at early and late times while space and time resolved spectroscopy is used for evaluating the emission features as well as for inferring plasma fundaments at on- and off-axis. Structure and dynamics of the plasma kernel obtained using imaging techniques are also compared to numerical simulations using computational fluid dynamics code. The emission from the kernel showed that spectral features from ions, atoms and molecules are separated in time with an early time temperatures and densities in excess of 35000 K and 4×10 18 /cm 3 with an existence of thermal equilibrium. However, the emission from the off-kernel positions from the breakdown plasmas showed enhanced ultraviolet radiation with the presence of N 2 bands and represented by non-LTE conditions. Finally, our results also highlight that the ultraviolet radiation emitted during early time of spark evolution is the predominant source of the photo-excitation of the surrounding medium.« less

On- and off-axis spectral emission features from laser-produced gas breakdown plasmas

DOE PAGES

Harilal, S. S.; Skrodzki, P. J.; Miloshevsky, A.; ...

2017-06-01

Laser-heated gas breakdown plasmas or sparks emit profoundly in the ultraviolet and visible region of the electromagnetic spectrum with contributions from ionic, atomic, and molecular species. Laser created kernels expand into a cold ambient with high velocities during its early lifetime followed by confinement of the plasma kernel and eventually collapse. However, the plasma kernels produced during laser breakdown of gases are also capable of exciting and ionizing the surrounding ambient medium. Two mechanisms can be responsible for excitation and ionization of surrounding ambient: viz. photoexcitation and ionization by intense ultraviolet emission from the sparks produced during the early timesmore » of its creation and/or heating by strong shocks generated by the kernel during its expansion into the ambient. In this study, an investigation is made on the spectral features of on- and off-axis emission features of laser-induced plasma breakdown kernels generated in atmospheric pressure conditions with an aim to elucidate the mechanisms leading to ambient excitation and emission. Pulses from an Nd:YAG laser emitting at 1064 nm with 6 ns pulse duration are used to generate plasma kernels. Laser sparks were generated in air, argon, and helium gases to provide different physical properties of expansion dynamics and plasma chemistry considering the differences in laser absorption properties, mass density and speciation. Point shadowgraphy and time-resolved imaging were used to evaluate the shock wave and spark self-emission morphology at early and late times while space and time resolved spectroscopy is used for evaluating the emission features as well as for inferring plasma fundaments at on- and off-axis. Structure and dynamics of the plasma kernel obtained using imaging techniques are also compared to numerical simulations using computational fluid dynamics code. The emission from the kernel showed that spectral features from ions, atoms and molecules are separated in time with an early time temperatures and densities in excess of 35000 K and 4×1018 /cm3 with an existence of thermal equilibrium. However, the emission from the off-kernel positions from the breakdown plasmas showed enhanced ultraviolet radiation with the presence of N2 bands and represented by non-LTE conditions. Our results also highlight that the ultraviolet radiation emitted during early time of spark evolution is the predominant source of the photo-excitation of the surrounding medium.« less

Monitoring engineered remediation with borehole radar

USGS Publications Warehouse

Lane, J.W.; Day-Lewis, F. D.; Joesten, P.K.

2007-01-01

The success of engineered remediation is predicated on correct emplacement of either amendments (e.g., vegetable-oil emulsion, lactate, molasses, etc.) or permeable reactive barriers (e.g., vegetable oil, zero-valent iron, etc.) to enhance microbial or geochemical breakdown of contaminants and treat contaminants. Currently, site managers have limited tools to provide information about the distribution of injected materials; the existence of gaps or holes in barriers; and breakdown or transformation of injected materials over time. ?? 2007 Society of Exploration Geophysicists.

Characterization of Current Tower Cab Environments

DOT National Transportation Integrated Search

1977-11-01

This report describes the general tower cab environment in terms of: (a) the evolution of the tower cab, current cab classification and staffing levels, and the basic flow of ATC data relevant to cab operations, (b) a breakdown of functions performed...

Experimental investigation of high temperature high voltage thermionic diode for the space power nuclear reactor

NASA Astrophysics Data System (ADS)

Onufriyev, Valery. V.

2001-02-01

It is well known that the rise of arc from the dense glow discharge is connected with the thermion and secondary processes on the cathode surface (Granovsky, 1971; Leob, 1953; Engel, 1935). First model of breakdown of the cathode layer is connected with the increase of the cathode temperature in consequence of the ion bombardment that leads to the grows its thermo-emissive current. Other model shows the main role of the secondary effects on the cathode surface-the increase of the secondary ion emission coefficient-γi with the grows of glow discharge voltage. But the author of this investigation work of breakdown in Cs vapor (a transmission the glow discharge into self-maintaining arc discharge) discovered the next peculiarity: the value of breakdown voltage is constant when the values of vapor temperature (its pressure pcs) and cathode temperature Tk is constant too (Ub=constant with Tk=constant and pcs=constant) and it is not a statistical value (Onufryev, Grishin, 1996) (that was observed in gas glow discharges other authors (Granovsky, 1971; Leob, 1953; Engel, 1935)). The investigations of thermion high voltage high temperature diode (its breakdown characteristics in closed state and voltage-current characteristics in disclosed state) showed that the value of the breakdown voltage is depended on the vapor pressure in inter-electrode gap (IEG)-pcs and cathode temperature-Tk and is independent on IEG length-Δieg. On this base it was settled that the main role in transition of glow discharge to self-maintaining arc discharge plays an ion cathode layer but more exactly-the region of excited atoms-``Aston glow.'' .

Low Energy Dissipation Nano Device Research

NASA Astrophysics Data System (ADS)

Yu, Jenny

2015-03-01

The development of research on energy dissipation has been rapid in energy efficient area. Nano-material power FET is operated as an RF power amplifier, the transport is ballistic, noise is limited and power dissipation is minimized. The goal is Green-save energy by developing the Graphene and carbon nantube microwave and high performance devices. Higher performing RF amplifiers can have multiple impacts on broadly field, for example communication equipment, (such as mobile phone and RADAR); higher power density and lower power dissipation will improve spectral efficiency which translates into higher system level bandwidth and capacity for communications equipment. Thus, fundamental studies of power handling capabilities of new RF (nano)technologies can have broad, sweeping impact. Because it is critical to maximizing the power handling ability of grephene and carbon nanotube FET, the initial task focuses on measuring and understanding the mechanism of electrical breakdown. We aim specifically to determine how the breakdown voltage in graphene and nanotubes is related to the source-drain spacing, electrode material and thickness, and substrate, and thus develop reliable statistics on the breakdown mechanism and probability.

Evaluation of Optical Depths and Self-Absorption of Strontium and Aluminum Emission Lines in Laser-Induced Breakdown Spectroscopy (LIBS).

PubMed

Alfarraj, Bader A; Bhatt, Chet R; Yueh, Fang Yu; Singh, Jagdish P

2017-04-01

Laser-induced breakdown spectroscopy (LIBS) is a widely used laser spectroscopic technique in various fields, such as material science, forensic science, biological science, and the chemical and pharmaceutical industries. In most LIBS work, the analysis is performed using radiative transitions from atomic emissions. In this study, the plasma temperature and the product [Formula: see text] (the number density N and the absorption path length [Formula: see text]) were determined to evaluate the optical depths and the self-absorption of Sr and Al lines. A binary mixture of strontium nitrate and aluminum oxide was used as a sample, consisting of variety of different concentrations in powder form. Laser-induced breakdown spectroscopy spectra were collected by varying various parameters, such as laser energy, gate delay time, and gate width time to optimize the LIBS signals. Atomic emission from Sr and Al lines, as observed in the LIBS spectra of different sample compositions, was used to characterize the laser induced plasma and evaluate the optical depths and self-absorption of LIBS.

Experiments and Computational Theory for Electrical Breakdown in Critical Components: THz Imaging of Electronic Plasmas.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zutavern, Fred J.; Hjalmarson, Harold P.; Bigman, Verle Howard

This report describes the development of ultra-short pulse laser (USPL) induced terahertz (THz) radiation to image electronic plasmas during electrical breakdown. The technique uses three pulses from two USPLs to (1) trigger the breakdown, (2) create a 2 picosecond (ps, 10 -12 s), THz pulse to illuminate the breakdown, and (3) record the THz image of the breakdown. During this three year internal research program, sub-picosecond jitter timing for the lasers, THz generation, high bandwidth (BW) diagnostics, and THz image acquisition was demonstrated. High intensity THz radiation was optically-induced in a pulse-charged gallium arsenide photoconductive switch. The radiation was collected,more » transported, concentrated, and co-propagated through an electro-optic crystal with an 800 nm USPL pulse whose polarization was rotated due to the spatially varying electric field of the THz image. The polarization modulated USPL pulse was then passed through a polarizer and the resulting spatially varying intensity was detected in a high resolution digital camera. Single shot images had a signal to noise of %7E3:1. Signal to noise was improved to %7E30:1 with several experimental techniques and by averaging the THz images from %7E4000 laser pulses internally and externally with the camera and the acquisition system (40 pulses per readout). THz shadows of metallic films and objects were also recorded with this system to demonstrate free-carrier absorption of the THz radiation and improve image contrast and resolution. These 2 ps THz pulses were created and resolved with 100 femtosecond (fs, 10 -15 s) long USPL pulses. Thus this technology has the capability to time-resolve extremely fast repetitive or single shot phenomena, such as those that occur during the initiation of electrical breakdown. The goal of imaging electrical breakdown was not reached during this three year project. However, plans to achieve this goal as part of a follow-on project are described in this document. Further modifications to improve the THz image contrast and resolution are proposed, and after they are made, images of photo-induced carriers in gallium arsenide and silicon will be acquired to evaluate image sensitivity versus carrier density. Finally electrical breakdown will be induced with the first USPL pulse, illuminated with THz radiation produced with the second USPL pulse and recorded with the third USPL pulse.« less

Time-dependent dielectric breakdown of atomic-layer-deposited Al2O3 films on GaN

NASA Astrophysics Data System (ADS)

Hiraiwa, Atsushi; Sasaki, Toshio; Okubo, Satoshi; Horikawa, Kiyotaka; Kawarada, Hiroshi

2018-04-01

Atomic-layer-deposited (ALD) Al2O3 films are the most promising surface passivation and gate insulation layers in non-Si semiconductor devices. Here, we carried out an extensive study on the time-dependent dielectric breakdown characteristics of ALD-Al2O3 films formed on homo-epitaxial GaN substrates using two different oxidants at two different ALD temperatures. The breakdown times were approximated by Weibull distributions with average shape parameters of 8 or larger. These values are reasonably consistent with percolation theory predictions and are sufficiently large to neglect the wear-out lifetime distribution in assessing the long-term reliability of the Al2O3 films. The 63% lifetime of the Al2O3 films increases exponentially with a decreasing field, as observed in thermally grown SiO2 films at low fields. This exponential relationship disproves the correlation between the lifetime and the leakage current. Additionally, the lifetime decreases with measurement temperature with the most remarkable reduction observed in high-temperature (450 °C) O3-grown films. This result agrees with that from a previous study, thereby ruling out high-temperature O3 ALD as a gate insulation process. When compared at 200 °C under an equivalent SiO2 field of 4 MV/cm, which is a design guideline for thermal SiO2 on Si, high-temperature H2O-grown Al2O3 films have the longest lifetimes, uniquely achieving the reliability target of 20 years. However, this target is accomplished by a relatively narrow margin and, therefore, improvements in the lifetime are expected to be made, along with efforts to decrease the density of extrinsic Al2O3 defects, if any, to promote the practical use of ALD Al2O3 films.

The smooth transition from field emission to a self-sustained plasma in microscale electrode gaps at atmospheric pressure

NASA Astrophysics Data System (ADS)

Bilici, Mihai A.; Haase, John R.; Boyle, Calvin R.; Go, David B.; Sankaran, R. Mohan

2016-06-01

We report on the existence of a smooth transition from field emission to a self-sustained plasma in microscale electrode geometries at atmospheric pressure. This behavior, which is not found at macroscopic scales or low pressures, arises from the unique combination of large electric fields that are created in microscale dimensions to produce field-emitted electrons and the high pressures that lead to collisional ionization of the gas. Using a tip-to-plane electrode geometry, currents less than 10 μA are measured at onset voltages of ˜200 V for gaps less than 5 μm, and analysis of the current-voltage (I-V) relationship is found to follow Fowler-Nordheim behavior, confirming field emission. As the applied voltage is increased, gas breakdown occurs smoothly, initially resulting in the formation of a weak, partial-like glow and then a self-sustained glow discharge. Remarkably, this transition is essentially reversible, as no significant hysteresis is observed during forward and reverse voltage sweeps. In contrast, at larger electrode gaps, no field emission current is measured and gas breakdown occurs abruptly at higher voltages of ˜400 V, absent of any smooth transition from the pre-breakdown condition and is characterized only by glow discharge formation.

Compliance of the Stokes-Einstein model and breakdown of the Stokes-Einstein-Debye model for a urea-based supramolecular polymer of high viscosity.

PubMed

Świergiel, Jolanta; Bouteiller, Laurent; Jadżyn, Jan

2014-11-14

Impedance spectroscopy was used for the study of the static and dynamic behavior of the electrical conductivity of a hydrogen-bonded supramolecular polymer of high viscosity. The experimental data are discussed in the frame of the Stokes-Einstein and Stokes-Einstein-Debye models. It was found that the translational movement of the ions is due to normal Brownian diffusion, which was revealed by a fulfillment of Ohm's law by the electric current and a strictly exponential decay of the current after removing the electric stimulus. The dependence of the dc conductivity on the viscosity of the medium fulfills the Stokes-Einstein model quite well. An extension of the model, by including in it the conductivity relaxation time, is proposed in this paper. A breakdown of the Stokes-Einstein-Debye model is revealed by the relations of the dipolar relaxation time to the viscosity and to the dc ionic conductivity. The importance of the C=O···H-N hydrogen bonds in that breakdown is discussed.

A high-current rail-type gas switch with preionization by an additional corona discharge

NASA Astrophysics Data System (ADS)

Antipov, E. I.; Belozerov, O. S.; Krastelev, E. G.

2016-12-01

The characteristics of a high-current rail-type gas switch with preionization of the gas (air) in a spark gap by an additional corona discharge are investigated. The experiments were performed in a voltage range of 10-45 kV using a two-electrode switch consisting of two cylindrical electrodes with a diameter of 22 mm and a length of 100 mm and a set of laterally located corona-discharge needles. The requirements for the position and size of the needles are defined for which a corona discharge is ignited before a breakdown of the main gap and does not change to a sparking form, and the entire length of the rail electrodes is efficiently used. The fulfillment of these requirements ensures stable operation of the switch with a small variation of the pulse breakdown voltage, which is not more than 1% for a fixed voltage-pulse rise time in the range from 150 ns to 3.5 μs. A short delay time of the switch breakdown makes it possible to control the two-electrode switch by an overvoltage pulse of nanosecond duration.

Electrical overstress in AlGaN/GaN HEMTs: study of degradation processes

NASA Astrophysics Data System (ADS)

Kuzmík, J.; Pogany, D.; Gornik, E.; Javorka, P.; Kordoš, P.

2004-02-01

We study degradation mechanisms in 50 μm gate width/0.45 μm length AlGaN/GaN HEMTs after electrical overstresses. One hundred nanosecond long rectangular current pulses are applied on the drain contact keeping either both of the source and gate grounded or the source grounded and gate floating. Source-drain pulsed I- V characteristics show similar shape for both connections. After the HEMT undergoes the source-drain breakdown, a negative differential resistance region transits into a low voltage/high current region. Changes in the Schottky contact dc I- V characteristics and in the source and drain ohmic contacts are investigated as a function of the current stress level and are related to the HEMT dc performance. Catastrophic HEMT degradation was observed after Istress=1.65 A in case of the 'gate floating' connection due to ohmic contacts burnout. In case of the 'gate grounded' connection, Istress=0.45 A was sufficient for the gate failure showing a high gate susceptibility to overstress. Backside transient interferometric mapping technique experiment reveals a current filament formation under both HEMT stress connections. Infrared camera observations lead to conclusion that the filament formation together with a consequent high-density electron flow is responsible for a dark spot formation and gradual ohmic contact degradation.

Transistors and tunnel diodes enabled by large-scale MoS2 nanosheets grown on GaN

NASA Astrophysics Data System (ADS)

San Yip, Pak; Zou, Xinbo; Cho, Wai Ching; Wu, Kam Lam; Lau, Kei May

2017-07-01

We report growth, fabrication, and device results of MoS2-based transistors and diodes implemented on a single 2D/3D material platform. The 2D/3D platform consists of a large-area MoS2 thin film grown on SiO2/p-GaN substrates. Atomic force microscopy, scanning electron microscopy, and Raman spectroscopy were used to characterize the thickness and quality of the as-grown MoS2 film, showing that the large-area MoS2 nanosheet has a smooth surface morphology constituted by small grains. Starting from the same material, both top-gated MoS2 field effect transistors and MoS2/SiO2/p-GaN heterojunction diodes were fabricated. The transistors exhibited a high on/off ratio of 105, a subthreshold swing of 74 mV dec-1, field effect mobility of 0.17 cm2 V-1 s-1, and distinctive current saturation characteristics. For the heterojunction diodes, current-rectifying characteristics were demonstrated with on-state current density of 29 A cm-2 and a current blocking property up to -25 V without breakdown. The reported transistors and diodes enabled by the same 2D/3D material stack present promising building blocks for constructing future nanoscale electronics.

Initiation of Negative Streamers from Hydrometeors at Subbreakdown Field Conditions

NASA Astrophysics Data System (ADS)

Shi, F.; Liu, N.; Dwyer, J. R.; Tilles, J.

2017-12-01

Recent high-speed interferometer observations have indicated that the initiation of lightning may begin as compact intracloud discharges (CIDs) [Rison et al., Nat. Commun., 7, 10721, 2016], which are caused by a process termed fast positive breakdown. It is hypothesized that fast positive breakdown consists of a system of positive streamers [Rison et al., 2016]. A follow-up investigation by using the same interferometer has found that CIDs can also be caused by fast negative breakdown [Tilles et al., AE12A-03, AGU Fall Meeting, 2016]. If negative streamers are the underlying process driving fast negative breakdown, this suggests that negative streamers can be initiated and propagate through a significant distance of about one kilometer without detectable signals from positive streamers. However, initiation of negative streamers from isolated hydrometeors in subbreakdown fields has never been reproduced by modeling studies [Liu et al., Phys. Rev. Lett., 109, 025002, 2012; Sadighi et al., J. Geophys. Res. Atmos., 120, 3660, 2015; Shi et al., J. Geophys. Res. Atmos., 121, 7284, 2016]. In this talk, we will show that negative streamers can be successfully initiated from the tip of a cone-shape hydrometeor in an electric field well below conventional breakdown threshold field, suggesting that the shape of a hydrometeor plays an important role in streamer initiation. Formation of positive streamers may follow the initiation of negative streamers, and the characteristics of positive and negative streamers developing in the same subbreakdown field can be very different. For example, the peak field of the positive streamer head is almost two times larger than that of the negative head; the streamer channel density of the positive streamer is larger than that of the negative streamer; and the growth rate of the positive streamer is larger than that of the negative streamer. We will discuss the implications of our modeling results in the context of the observations of fast positive and negative breakdown.

Applications of Laser-Induced Breakdown Spectroscopy (LIBS) in Molten Metal Processing

NASA Astrophysics Data System (ADS)

Hudson, Shaymus W.; Craparo, Joseph; De Saro, Robert; Apelian, Diran

2017-10-01

In order for metals to meet the demand for critical applications in the automotive, aerospace, and defense industries, tight control over the composition and cleanliness of the metal must be achieved. The use of laser-induced breakdown spectroscopy (LIBS) for applications in metal processing has generated significant interest for its ability to perform quick analyses in situ. The fundamentals of LIBS, current techniques for deployment on molten metal, demonstrated capabilities, and possible avenues for development are reviewed and discussed.

High Performance 0.1 μm GaAs Pseudomorphic High Electron Mobility Transistors with Si Pulse-Doped Cap Layer for 77 GHz Car Radar Applications

NASA Astrophysics Data System (ADS)

Kim, Sungwon; Noh, Hunhee; Jang, Kyoungchul; Lee, JaeHak; Seo, Kwangseok

2005-04-01

In this study, 0.1 μm double-recessed T-gate GaAs pseudomorphic high electron mobility transistors (PHEMT’s), in which an InGaAs layer and a Si pulse-doped layer in the cap structure are inserted, have been successfully fabricated. This cap structure improves ohmic contact. The ohmic contact resistance is as small as 0.07 Ωmm, consequently the source resistance is reduced by about 20% compared to that of a conventional cap structure. This device shows good DC and microwave performance such as an extrinsic transconductance of 620 mS/mm, a maximum saturated drain current of 780 mA/mm, a cut-off frequency fT of 140 GHz and a maximum oscillation frequency of 260 GHz. The reverse breakdown is 5.7 V at a gate current density of 1 mA/mm. The maximum available gain is about 7 dB at 77 GHz. It is well suited for car radar monolithic microwave integrated circuits (MMICs).

Normally-off p-GaN/AlGaN/GaN high electron mobility transistors using hydrogen plasma treatment

NASA Astrophysics Data System (ADS)

Hao, Ronghui; Fu, Kai; Yu, Guohao; Li, Weiyi; Yuan, Jie; Song, Liang; Zhang, Zhili; Sun, Shichuang; Li, Xiajun; Cai, Yong; Zhang, Xinping; Zhang, Baoshun

2016-10-01

In this letter, we report a method by introducing hydrogen plasma treatment to realize normally-off p-GaN/AlGaN/GaN HEMT devices. Instead of using etching technology, hydrogen plasma was adopted to compensate holes in the p-GaN above the two dimensional electron gas (2DEG) channel to release electrons in the 2DEG channel and form high-resistivity area to reduce leakage current and increase gate control capability. The fabricated p-GaN/AlGaN/GaN HEMT exhibits normally-off operation with a threshold voltage of 1.75 V, a subthreshold swing of 90 mV/dec, a maximum transconductance of 73.1 mS/mm, an ON/OFF ratio of 1 × 107, a breakdown voltage of 393 V, and a maximum drain current density of 188 mA/mm at a gate bias of 6 V. The comparison of the two processes of hydrogen plasma treatment and p-GaN etching has also been made in this work.

Effects of Amplitude Variations on Deformation and Damage Evolution in SnAgCu Solder in Isothermal Cycling

NASA Astrophysics Data System (ADS)

Wentlent, Luke; Alghoul, Thaer M.; Greene, Christopher M.; Borgesen, Peter

2018-02-01

Although apparently simpler than in thermal cycling, the behavior of SnAgCu (SAC) solder joints in cyclic bending or vibration is not currently well understood. The rate of damage has been shown to scale with the inelastic work per cycle, and excursions to higher amplitudes lead to an apparent softening, some of which remains so that damage accumulation is faster in subsequent cycling at lower amplitudes. This frequently leads to a dramatic breakdown of current damage accumulation rules. An empirical damage accumulation rule has been proposed to account for this, but any applicability to the extrapolation of accelerated test results to life under realistic long-term service conditions remains to be validated. This will require a better understanding of the underlying mechanisms. The present work provides experimental evidence to support recent suggestions that the observed behavior is a result of cycling-induced dislocation structures providing for increased diffusion creep. It is argued that this means that the measured work is an indicator of the instantaneous dislocation density, rather than necessarily reflecting the actual work involved in the creation of the damage.

Power supply system for negative ion source at IPR

NASA Astrophysics Data System (ADS)

Gahlaut, Agrajit; Sonara, Jashwant; Parmar, K. G.; Soni, Jignesh; Bandyopadhyay, M.; Singh, Mahendrajit; Bansal, Gourab; Pandya, Kaushal; Chakraborty, Arun

2010-02-01

The first step in the Indian program on negative ion beams is the setting up of Negative ion Experimental Assembly - RF based, where 100 kW of RF power shall be coupled to a plasma source producing plasma of density ~5 × 1012 cm-3, from which ~ 10 A of negative ion beam shall be produced and accelerated to 35 kV, through an electrostatic ion accelerator. The experimental system is modelled similar to the RF based negative ion source, BATMAN presently operating at IPP, Garching, Germany. The mechanical system for Negative Ion Source Assembly is close to the IPP source, remaining systems are designed and procured principally from indigenous sources, keeping the IPP configuration as a base line. High voltage (HV) and low voltage (LV) power supplies are two key constituents of the experimental setup. The HV power supplies for extraction and acceleration are rated for high voltage (~15 to 35kV), and high current (~ 15 to 35A). Other attributes are, fast rate of voltage rise (< 5ms), good regulation (< ±1%), low ripple (< ±2%), isolation (~50kV), low energy content (< 10J) and fast cut-off (< 100μs). The low voltage (LV) supplies required for biasing and providing heating power to the Cesium oven and the plasma grids; have attributes of low ripple, high stability, fast and precise regulation, programmability and remote operation. These power supplies are also equipped with over-voltage, over-current and current limit (CC Mode) protections. Fault diagnostics, to distinguish abnormal rise in currents (breakdown faults) with over-currents is enabled using fast response breakdown and over-current protection scheme. To restrict the fault energy deposited on the ion source, specially designed snubbers are implemented in each (extraction and acceleration) high voltage path to swap the surge energy. Moreover, the monitoring status and control signals from these power supplies are required to be electrically (~ 50kV) isolated from the system. The paper shall present the design basis, topology selection, manufacturing, testing, commissioning, integration and control strategy of these HVPS. A complete power interconnection scheme, which includes all protective devices and measuring devices, low & high voltage power supplies, monitoring and control signals etc. shall also be discussed. The paper also discusses the protocols involved in grounding and shielding, particularly in operating the system in RF environment.

Heating performances of a IC in-blanket ring array

NASA Astrophysics Data System (ADS)

Bosia, G.; Ragona, R.

2015-12-01

An important limiting factor to the use of ICRF as candidate heating method in a commercial reactor is due to the evanescence of the fast wave in vacuum and in most of the SOL layer, imposing proximity of the launching structure to the plasma boundary and causing, at the highest power level, high RF standing and DC rectified voltages at the plasma periphery, with frequent voltage breakdowns and enhanced local wall loading. In a previous work [1] the concept for an Ion Cyclotron Heating & Current Drive array (and using a different wave guide technology, a Lower Hybrid array) based on the use of periodic ring structure, integrated in the reactor blanket first wall and operating at high input power and low power density, was introduced. Based on the above concept, the heating performance of such array operating on a commercial fusion reactor is estimated.

Heating performances of a IC in-blanket ring array

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bosia, G., E-mail: gbosia@to.infn.it; Ragona, R.

2015-12-10

An important limiting factor to the use of ICRF as candidate heating method in a commercial reactor is due to the evanescence of the fast wave in vacuum and in most of the SOL layer, imposing proximity of the launching structure to the plasma boundary and causing, at the highest power level, high RF standing and DC rectified voltages at the plasma periphery, with frequent voltage breakdowns and enhanced local wall loading. In a previous work [1] the concept for an Ion Cyclotron Heating & Current Drive array (and using a different wave guide technology, a Lower Hybrid array) basedmore » on the use of periodic ring structure, integrated in the reactor blanket first wall and operating at high input power and low power density, was introduced. Based on the above concept, the heating performance of such array operating on a commercial fusion reactor is estimated.« less

Improvement of Sol-Gel Derived PbZrxTi1-xO3 Film Properties Using Thermal Press Treatment

NASA Astrophysics Data System (ADS)

Kaneda, Toshihiko; Kim, Joo-Nam; Tokumitsu, Eisuke; Shimoda, Tatsuya

2010-09-01

A thermal press treatment was introduced in the sol-gel process of PbZrxTi1-xO3 (PZT) thin films for the first time and the crystalline and electrical characteristics of the PZT films were investigated. The thermal press treatment was applied to the amorphous PZT gel film before crystallization annealing. It is found that the crystalline orientation and grain size of the PZT film fabricated with the thermal press treatment are different from those of the film fabricated by the conventional sol-gel process without the thermal press treatment, even though the crystallization conditions are exactly the same. It is demonstrated that the electrical properties, especially leakage current density and breakdown field, are significantly improved for the PZT film fabricated with the thermal press treatment. Furthermore, we also demonstrate that the fatigue property is improved by introducing the thermal press treatment.

The collapse of the local, Spitzer-Haerm formulation and a global-local generalization for heat flow in an inhomogeneous, fully ionized plasma

NASA Technical Reports Server (NTRS)

Scudder, J. D.; Olbert, S.

1983-01-01

The breakdown of the classical (CBES) field aligned transport relations for electrons in an inhomogeneous, fully ionized plasma as a mathematical issue of radius of convergence is addressed, the finite Knudsen number conditions when CBES results are accurate is presented and a global-local (GL) way to describe the results of Coulomb physics moderated conduction that is more nearly appropriate for astrophysical plasmas are defined. This paper shows the relationship to and points of departure of the present work from the CBES approach. The CBES heat law in current use is shown to be an especially restrictive special case of the new, more general GL result. A preliminary evaluation of the dimensionless heat function, using analytic formulas, shows that the dimensionless heat function profiles versus density of the type necessary for a conduction supported high speed solar wind appear possible.

Plasma diagnostics of non-equilibrium atmospheric plasma jets

NASA Astrophysics Data System (ADS)

Shashurin, Alexey; Scott, David; Keidar, Michael; Shneider, Mikhail

2014-10-01

Intensive development and biomedical application of non-equilibrium atmospheric plasma jet (NEAPJ) facilitates rapid growth of the plasma medicine field. The NEAPJ facility utilized at the George Washington University (GWU) demonstrated efficacy for treatment of various cancer types (lung, bladder, breast, head, neck, brain and skin). In this work we review recent advances of the research conducted at GWU concerned with the development of NEAPJ diagnostics including Rayleigh Microwave Scattering setup, method of streamer scattering on DC potential, Rogowski coils, ICCD camera and optical emission spectroscopy. These tools allow conducting temporally-resolved measurements of plasma density, electrical potential, charge and size of the streamer head, electrical currents flowing though the jet, ionization front propagation speed etc. Transient dynamics of plasma and discharge parameters will be considered and physical processes involved in the discharge will be analyzed including streamer breakdown, electrical coupling of the streamer tip with discharge electrodes, factors determining NEAPJ length, cross-sectional shape and propagation path etc.

High performance InP JFETs grown by MOCVD using tertiarybutylphosphine

NASA Astrophysics Data System (ADS)

Hashemi, M. M.; Shealy, J. B.; Corvini, P. J.; Denbaars, S. P.; Mishra, U. K.

1994-02-01

Indium phosphide channel junction field effect transistors were fabricated by metalorganic chemical vapor deposition using tertiarybulylphosphine (TBP) as the alternative source for phosphine. At growth temperatures of 600°C, InP with specular surface morphology and mobilities as high as 61000 cm2/V s at 77Khas been achieved using trimethylindium and TBP. To improve device isolation, pinch-off characteristics, and output transconductance, we employ a high resistivity (1 × 108 Ω-cm) semi-insulating InP buffer layer using ferrocene as the Fe-dopant. Devices with gate lengths of 1 urn exhibit very high extrinsic transconductance of 130 mS/mm, gate-drain breakdown voltage exceeding 20 V, maximum current density of >450 mA/mm with record high fT and fmax of 15 GHz and 35 GHz, respectively. These results indicate: that InP JFETs are promising electronic devices for microwave power amplification, and that TBP is capable of device quality materials.

Cellulose Triacetate Dielectric Films For Capacitors

NASA Technical Reports Server (NTRS)

Yen, Shiao-Ping S.; Jow, T. Richard

1994-01-01

Cellulose triacetate investigated for use as dielectric material in high-energy-density capacitors for pulsed-electrical-power systems. Films of cellulose triacetate metalized on one or both sides for use as substrates for electrodes and/or as dielectrics between electrodes in capacitors. Used without metalization as simple dielectric films. Advantages include high breakdown strength and self-healing capability.

Analysis and characterization of microwave plasma generated with rectangular all-dielectric resonators

NASA Astrophysics Data System (ADS)

Kourtzanidis, K.; Raja, L. L.

2017-04-01

We report on a computational modeling study of small scale plasma discharge formation with rectangular dielectric resonators (DR). An array of rectangular dielectric slabs, separated by a gap of millimeter dimensions is used to provide resonant response when illuminated by an incident wave of 1.26 GHz. A coupled electromagnetic (EM) wave-plasma model is used to describe the breakdown, early response and steady state of the argon discharge. We characterize the plasma generation with respect to the input power, background gas pressure and gap size. It is found that the plasma discharge is generated mainly inside the gaps between the DR at positions that correspond to the antinodes of the resonant enhanced electric field pattern. The enhancement of the electric field inside the gaps is due to a combination of leaking and displacement current radiation from the DR. The plasma is sustained in over-critical densities due to the large skin depth with respect to the gap and plasma size. Electron densities are calculated in the order of {10}18{--}{10}19 {{{m}}}-3 for a gas pressure of 10 Torr, while they exceed 1020 {{{m}}}-3 in atmospheric conditions. Increase of input power leads to more intense ionization and thus faster plasma formation and results to a more symmetric plasma pattern. For low background gas pressure the discharge is diffusive and extends away from the gap region while in high pressure it is constricted inside the gap. An optimal gap size can be found to provide maximum EM energy transfer to the plasma. This fact demonstrates that the gap size dictates to a certain extent the resonant frequency and the Q-factor of the dielectric array and the breakdown fields can not be determined in a straight-forward way but they are functions of the resonators geometry and incident field frequency.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bowring, Daniel; Freemire, Ben; Kochemirovskiy, Alexey

Ionization cooling of intense muon beams requires the operation of high-gradient, normal-conducting RF structures within multi-Tesla magnetic fields. The application of strong magnetic fields has been shown to lead to an increase in vacuum RF breakdown. This phenomenon imposes operational (i.e. gradient) limitations on cavities in ionization cooling channels, and has a bearing on the design and operation of other RF structures as well, such as photocathodes and klystrons. We present recent results from Fermilab's MuCool Test Area (MTA), in which 201 and 805 MHz cavities were operated at high power both with and without the presence of multi-Tesla magneticmore » fields. We present an analysis of damage due to breakdown in these cavities, as well as measurements related to dark current and their relation to a conceptual model describing breakdown phenomena.« less

Molecular-beam heteroepitaxial growth and characterization of wide-band-gap semiconductor films and devices

NASA Astrophysics Data System (ADS)

Piquette, Eric Charles

The thesis consists of two parts. Part I describes work on the molecular beam epitaxial (MBE) growth of GaN, AlN, and AlxGa 1-xN alloys, as well as efforts in the initial technical development and demonstration of nitride-based high power electronic devices. The major issues pertaining to MBE growth are discussed, including special requirements of the growth system, substrates, film nucleation, n - and p-type doping, and the dependence of film quality on growth parameters. The GaN films were characterized by a variety of methods, including high resolution x-ray diffraction, photoluminescence, and Hall effect measurement. It is found that the film polarity and extended defect density as well as quality of photoluminescence and electrical transport properties depend crucially on how the nitride layer is nucleated on the substrate and how the subsequent film surface morphology evolves, which can be controlled by the growth conditions. A technique is proposed and demonstrated that utilizes the control of morphology evolution to reduce defect density and improve the structural quality of MBE GaN films. In addition to growth, the design and processing of high voltage GaN Schottky diodes is presented, as well as an experimental study of sputter-deposited ohmic and rectifying metal contacts to GaN. Simple models for high power devices, based on materials properties such as minority carrier diffusion length and critical electric breakdown field, are used to estimate the voltage standoff capability, current carrying capacity, and maximum operating frequency of unipolar and bipolar GaN power devices. The materials and transport properties of GaN pertinent to high power device design were measured experimentally. High voltage Schottky rectifiers were fabricated which verify the impressive electric breakdown field of GaN (2--5 MV/cm). Electron beam induced current (EBIC) experiments were also conducted to measure the minority carrier diffusion length for both electrons and holes in GaN. Part II of the thesis describes studies of the MBE growth of ZnS and investigations of ZnS/GaN fight emitting heterojunctions which show promise for application as blue and green light emitters. Zinc sulfide layers doped with Ag and Al were grown by MBE on sapphire, GaAs, and GaN substrates and characterized by x-ray diffraction and photoluminescence. Preliminary current-voltage and electroluminescence results are presented for a processed ZnS:Al,Ag/GaN:Mg prototype blue light emitting device.

Interface state density of free-standing GaN Schottky diodes

NASA Astrophysics Data System (ADS)

Faraz, S. M.; Ashraf, H.; Imran Arshad, M.; Hageman, P. R.; Asghar, M.; Wahab, Q.

2010-09-01

Schottky diodes were fabricated on the HVPE-grown, free-standing gallium nitride (GaN) layers of n- and p-types. Both contacts (ohmic and Schottky) were deposited on the top surface using Al/Ti and Pd/Ti/Au, respectively. The Schottky diode fabricated on n-GaN exhibited double barriers with values of 0.9 and 0.6 eV and better performance in the rectification factor together with reverse and forward currents with an ideality factor of 1.8. The barrier height for the p-GaN Schottky diode is 0.6 eV with an ideality factor of 4.16. From the capacitance-voltage (C-V) measurement, the net doping concentration of n-GaN is 4 × 1017 cm-3, resulting in a lower reverse breakdown of around -12 V. The interface state density (NSS) as a function of EC-ESS is found to be in the range 4.23 × 1012-3.87 × 1011 eV-1 cm-2 (below the conduction band) from Ec-0.90 to EC-0.99. Possible reasons responsible for the low barrier height and high ideality factor have been addressed.

Increased Depression and Anxiety Symptoms are Associated with More Breakdowns in Cognitive Control to Cocaine Cues in Veterans with Cocaine Use Disorder.

PubMed

DiGirolamo, Gregory J; Gonzalez, Gerardo; Smelson, David; Guevremont, Nathan; Andre, Michael I; Patnaik, Pooja O; Zaniewski, Zachary R

2017-01-01

Cue-elicited craving is a clinically important aspect of cocaine addiction directly linked to cognitive control breakdowns and relapse to cocaine-taking behavior. However, whether craving drives breakdowns in cognitive control toward cocaine cues in veterans, who experience significantly more co-occurring mood disorders, is unknown. The present study tests whether veterans have breakdowns in cognitive control because of cue-elicited craving or current anxiety or depression symptoms. Twenty-four veterans with cocaine use disorder were cue-exposed, then tested on an antisaccade task in which participants were asked to control their eye movements toward cocaine or neutral cues by looking away from the cue. The relationship among cognitive control breakdowns (as measured by eye errors), cue-induced craving (changes in self-reported craving following cocaine cue exposure), and mood measures (depression and anxiety) was investigated. Veterans made significantly more errors toward cocaine cues than neutral cues. Depression and anxiety scores, but not cue-elicited craving, were significantly associated with increased subsequent errors toward cocaine cues for veterans. Increased depression and anxiety are specifically related to more cognitive control breakdowns toward cocaine cues in veterans. Depression and anxiety must be considered further in the etiology and treatment of cocaine use disorder in veterans. Furthermore, treating depression and anxiety as well, rather than solely alleviating craving levels, may prove a more effective combined treatment option in veterans with cocaine use disorder.

Plasma development in the accelerator of a 2-kJ focus discharge.

PubMed

Fischer, H; Haering, K H

1979-07-01

Optical image structures from early breakdown ( approximately 200 nsec) to focus formation (~1300 nsec) in 3 Torr hydrogen were studied by means of 2 image converter shutters having 50-nsec and 10-nsec exposure. Space charge limited cathode spots at the outer electrode (OE)-spoke-shaped positive columns across the gap-and an extended electron cloud along the center electrode (CE) determine the current flow during early breakdown. Ionization increases exponentially within the center gap plasma. This is separated from the CE by a pattern of anode drop filaments. Filament structures grow into the z-axis accelerated current sheath, which in addition carries the early spoke pattern. The sheath appears homogeneous after leaving the accelerator exit.

Observation of the avalanche of runaway electrons in air in a strong electric field.

PubMed

Gurevich, A V; Mesyats, G A; Zybin, K P; Yalandin, M I; Reutova, A G; Shpak, V G; Shunailov, S A

2012-08-24

The generation of an avalanche of runaway electrons is demonstrated for the first time in a laboratory experiment. Two flows of runaway electrons are formed sequentially in an extended air discharge gap at the stage of delay of a pulsed breakdown. The first, picosecond, runaway electron flow is emitted in the cathode region where the field is enhanced. Being accelerated in the gap, this beam generates electrons due to impact ionization. These secondary electrons form a delayed avalanche of runaway electrons if the field is strong enough. The properties of the avalanche correspond to the existing notions about the runaway breakdown in air. The measured current of the avalanche exceeds up to an order the current of the initiating electron beam.

Observation of the Avalanche of Runaway Electrons in Air in a Strong Electric Field

NASA Astrophysics Data System (ADS)

Gurevich, A. V.; Mesyats, G. A.; Zybin, K. P.; Yalandin, M. I.; Reutova, A. G.; Shpak, V. G.; Shunailov, S. A.

2012-08-01

The generation of an avalanche of runaway electrons is demonstrated for the first time in a laboratory experiment. Two flows of runaway electrons are formed sequentially in an extended air discharge gap at the stage of delay of a pulsed breakdown. The first, picosecond, runaway electron flow is emitted in the cathode region where the field is enhanced. Being accelerated in the gap, this beam generates electrons due to impact ionization. These secondary electrons form a delayed avalanche of runaway electrons if the field is strong enough. The properties of the avalanche correspond to the existing notions about the runaway breakdown in air. The measured current of the avalanche exceeds up to an order the current of the initiating electron beam.

Genomic heterozygosity and hybrid breakdown in cotton (Gossypium): different traits, different effects.

PubMed

Dai, Baosheng; Guo, Huanle; Huang, Cong; Zhang, Xianlong; Lin, Zhongxu

2016-04-12

Hybrid breakdown has been well documented in various species. Relationships between genomic heterozygosity and traits-fitness have been extensively explored especially in the natural populations. But correlations between genomic heterozygosity and vegetative and reproductive traits in cotton interspecific populations have not been studied. In the current study, two reciprocal F2 populations were developed using Gossypium hirsutum cv. Emian 22 and G. barbadense acc. 3-79 as parents to study hybrid breakdown in cotton. A total of 125 simple sequence repeat (SSR) markers were used to genotype the two F2 interspecific populations. To guarantee mutual independence among the genotyped markers, the 125 SSR markers were checked by the linkage disequilibrium analysis. To our knowledge, this is a novel approach to evaluate the individual genomic heterozygosity. After marker checking, 83 common loci were used to assess the extent of genomic heterozygosity. Hybrid breakdown was found extensively in the two interspecific F2 populations particularly on the reproductive traits because of the infertility and the bare seeds. And then, the relationships between the genomic heterozygosity and the vegetative reproductive traits were investigated. The only relationships between hybrid breakdown and heterozygosity were observed in the (Emian22 × 3-79) F2 population for seed index (SI) and boll number per plant (BN). The maternal cytoplasmic environment may have a significant effect on genomic heterozygosity and on correlations between heterozygosity and reproductive traits. A novel approach was used to evaluate genomic heterozygosity in cotton; and hybrid breakdown was observed in reproductive traits in cotton. These findings may offer new insight into hybrid breakdown in allotetraploid cotton interspecific hybrids, and may be useful for the development of interspecific hybrids for cotton genetic improvement.

Optimized dielectric properties of SrTiO3:Nb /SrTiO3 (001) films for high field effect charge densities

NASA Astrophysics Data System (ADS)

Cai, Xiuyu; Frisbie, C. Daniel; Leighton, C.

2006-12-01

The authors report the growth, structural and electrical characterizations of SrTiO3 films deposited on conductive SrTiO3:Nb (001) substrates by high pressure reactive rf magnetron sputtering. Optimized deposition parameters yield smooth epitaxial layers of high crystalline perfection with a room temperature dielectric constant ˜200 (for a thickness of 1150Å). The breakdown fields in SrTiO3:Nb /SrTiO3/Ag capacitors are consistent with induced charge densities >1×1014cm-2 for both holes and electrons, making these films ideal for high charge density field effect devices.

Experiments on H2-O2MHD power generation

NASA Technical Reports Server (NTRS)

Smith, J. M.

1980-01-01

Magnetohydrodynamic power generation experiments utilizing a cesium-seeded H2-O2 working fluid were carried out using a diverging area Hall duct having an entrance Mach number of 2. The experiments were conducted in a high-field strength cryomagnet facility at field strengths up to 5 tesla. The effects of power takeoff location, axial duct location within the magnetic field, generator loading, B-field strength, and electrode breakdown voltage were investigated. For the operating conditions of these experiments, it is found that the power output increases with the square of the B-field and can be limited by choking of the channel or interelectrode voltage breakdown which occurs at Hall fields greater than 50 volts/insulator. Peak power densities of greater than 100 MW/cu M were achieved.

Breakdown Characteristics of SF6 Gap Disturbed by a Metallic Protrusion under Oscillating Transient Overvoltages

NASA Astrophysics Data System (ADS)

Kawamura, Tatsuo; Lee, Bok-Hee; Nishimura, Takahiko; Ishii, Masaru

1994-04-01

This paper deals with the experimental investigations of particle-initiated breakdown of SF6 gas stressed by the oscillating transient overvoltage and non-oscillating impulse voltages. The experiments are carried out by using hemisphere-to-plane electrodes with a needle-shaped protrusion in the gas pressure range of 0.05 to 0.3 MPa. The temporal growth of the prebreakdown process is measured by a current shunt and a photomultiplier. The electrical breakdown is initiated by the streamer corona in the vicinity of a needle-shaped protrusion and the flashover of test gap is substantially influenced by the local field enhancement due to the space charge formed by the preceding streamer corona. The dependence of the voltage-time characteristics on the polarity of test voltage is appreciable, and the minimum breakdown voltage under the damped oscillating transient overvoltage is approximately the same as that under the standard lightning impulse voltage. In presence of positive polarity, the dielectric strength of SF6 gas stressed by the oscillating transient overvoltage is particularly sensitive to the local field perturbed by a sharp conducting particle. The formative time lag from the first streamer corona to breakdown is longer in negative polarity than in positive polarity and the field stabilization of space charge is more pronounced in negative polarity.

Novel attributes of AlGaN/AlN/GaN/SiC HEMTs with the multiple indented channel

NASA Astrophysics Data System (ADS)

Orouji, Ali A.; Ghaffari, Majid

2015-11-01

In this paper, a high performance AlGaN/AlN/GaN/SiC High Electron Mobility Transistor (HEMT) with the multiple indented channel (MIC-HEMT) is proposed. The main focus of the proposed structure is based on reduction of the space around the gate, stop of the spread of the depletion region around the source-drain, and decrement of the thickness of the channel between the gate and drain. Therefore, the breakdown voltage increases, meanwhile the elimination of the gate depletion layer extension to source/drain decreases the gate-source and gate-drain capacitances. The optimized results reveal that the breakdown voltage and the drain saturation current increase about 178% and 46% compared with a conventional HEMT (C-HEMT), respectively. Therefore, the maximum output power density is improved by factor 4.1 in comparison with conventional one. Also, the cut-off frequency of 25.2 GHz and the maximum oscillation frequency of 92.1 GHz for the MIC-HEMT are obtained compared to 13 GHz and 43 GHz for that of the C-HEMT and the minimum figure noise decreased consequently of reducing the gate-drain and gate-source capacitances by about 42% and 40%, respectively. The proposed MIC-HEMT shows a maximum stable gain (MSG) exceeding 24.1 dB at 3.1 GHz which the greatest gain is yet reported for HEMTs, showing the potential of this device for high power RF applications.

The Neutral Gas Desorption and Breakdown on a Metal-Dielectric Junction Immersed in a Plasma

NASA Technical Reports Server (NTRS)

Vayner, Boris; Galofaro, Joel; Ferguson, Dale; Lyons, Valerie J. (Technical Monitor)

2002-01-01

New results are presented of an experimental study and theoretical analysis of arcing on metal-dielectric junctions immersed in a low-density plasma. Two samples of conventional solar arrays have been used to investigate the effects of arcing within a wide range of neutral gas pressures, ion currents, and electron number densities. All data (except video) were obtained in digital form that allowed us to study the correlation between external parameters (plasma density, additional capacitance, bias voltage, etc) and arc characteristics (arc rate, arc current pulse width and amplitude, gas species partial pressures, intensities of spectral lines, and so on). Arc sites were determined by employing a video-camera, and it is shown that the most probable sites for arc inception are trip le-junctions, even though some arcs were initiated in gaps between cells. The effect of surface conditioning (decrease of arc rate due to outgassing) was clearly demonstrated. Moreover, a considerable increase in arc rate due to absorption of molecules from atmospheric air has been confirmed. The analysis of optical spectra (240-800 nm) reveals intense narrow atomic lines (Ag, H) and wide molecular bands (OH, CH, SiH, SiN) that confirm a complicated mechanism of arc plasma generation. The rate of plasma contamination due to arcing was measured by employing a mass-spectrometer. These measurements provided quite reliable data for the development of a theoretical model of plasma contamination, In conclusion, the arc threshold was increased to above 350 V (from 190 V) by keeping a sample in vacuum (20 micronTorr) for seven days. The results obtained are important for the understanding of the arc inception mechanism, which is absolutely essential for progress toward the design of high voltage solar arrays for space applications.

Study of high breakdown voltage GaN-based current-aperture vertical electron transistor with source-connected field-plates for power applications

NASA Astrophysics Data System (ADS)

Wang, Haiyong; Mao, Wei; Cong, Guanyu; Wang, Xiaofei; Du, Ming; Zheng, Xuefeng; Wang, Chong; Zhang, Jincheng; Hao, Yue

2018-07-01

A GaN-based current-aperture vertical electron transistor with source-connected field-plates (SFP-CAVET) is proposed and investigated by means of two-dimensional simulations. This device is characterized by the source-connected field-plates (SFP) at both sides, which leads to remarkable improvement of breakdown voltage (BV) without degradation of specific on-resistance (R on). Systematic analyses are conducted to reveal the mechanism of the SFP modulation effect on the potential and the electric field distributions and thus the BV improvement. Optimization and design of SFP-CAVET are performed for the maximum BV. Simulation results exhibit a R on of 2.25 mΩ · cm2 and a significantly enhanced BV of 3610 V in SFP-CAVET, indicating an average breakdown electric field of more than 240 V μm‑1. Compared with conventional CAVET, both BV and average breakdown electric field in SFP-CAVET are increased by more than 121% while R on remains unchanged. And the trade-off performance of BV and R on in SFP-CAVET is also better than that in GaN-based CAVET with superjunctions (SJ CAVET). In addition, the fabrication process issues of the proposed SFP-CAVET are also presented and discussed. These results could break a new path to further improve the trade-off performance of BV and R on in GaN-based vertical devices.

Characterization of vertical GaN p-n diodes and junction field-effect transistors on bulk GaN down to cryogenic temperatures

NASA Astrophysics Data System (ADS)

Kizilyalli, I. C.; Aktas, O.

2015-12-01

There is great interest in wide-bandgap semiconductor devices and most recently in vertical GaN structures for power electronic applications such as power supplies, solar inverters and motor drives. In this paper the temperature-dependent electrical behavior of vertical GaN p-n diodes and vertical junction field-effect transistors fabricated on bulk GaN substrates of low defect density (104 to 106 cm-2) is described. Homoepitaxial MOCVD growth of GaN on its native substrate and the ability to control the doping in the drift layers in GaN have allowed the realization of vertical device architectures with drift layer thicknesses of 6 to 40 μm and net carrier electron concentrations as low as 1 × 1015 cm-3. This parameter range is suitable for applications requiring breakdown voltages of 1.2 kV to 5 kV. Mg, which is used as a p-type dopant in GaN, is a relatively deep acceptor (E A ≈ 0.18 eV) and susceptible to freeze-out at temperatures below 200 K. The loss of holes in p-GaN has a deleterious effect on p-n junction behavior, p-GaN contacts and channel control in junction field-effect transistors at temperatures below 200 K. Impact ionization-based avalanche breakdown (BV > 1200 V) in GaN p-n junctions is characterized between 77 K and 423 K for the first time. At higher temperatures the p-n junction breakdown voltage improves due to increased phonon scattering. A positive temperature coefficient in the breakdown voltage is demonstrated down to 77 K; however, the device breakdown characteristics are not as abrupt at temperatures below 200 K. On the other hand, contact resistance to p-GaN is reduced dramatically above room temperature, improving the overall device performance in GaN p-n diodes in all cases except where the n-type drift region resistance dominates the total forward resistance. In this case, the electron mobility can be deconvolved and is found to decrease with T -3/2, consistent with a phonon scattering model. Also, normally-on vertical junction field-effect transistors with BV = 1000 V and drain currents of 4 A are fabricated and characterized over the same temperature range. It is demonstrated that vertical GaN devices (diodes and transistors) utilizing p-n junctions are suitable for most practical applications including automotive ones (210 K < T < 423 K). While devices are functional at cryogenic temperatures (77 K) there may be some limitations to their performance due the freeze-out of Mg acceptors.

Alignment of Boron Nitride Nanofibers in Epoxy Composite Films for Thermal Conductivity and Dielectric Breakdown Strength Improvement.

PubMed

Wang, Zhengdong; Liu, Jingya; Cheng, Yonghong; Chen, Siyu; Yang, Mengmeng; Huang, Jialiang; Wang, Hongkang; Wu, Guanglei; Wu, Hongjing

2018-04-15

Development of polymer-based composites with simultaneously high thermal conductivity and breakdown strength has attracted considerable attention owing to their important applications in both electronic and electric industries. In this work, boron nitride (BN) nanofibers (BNNF) are successfully prepared as fillers, which are used for epoxy composites. In addition, the BNNF in epoxy composites are aligned by using a film casting method. The composites show enhanced thermal conductivity and dielectric breakdown strength. For instance, after doping with BNNF of 2 wt%, the thermal conductivity of composites increased by 36.4% in comparison with that of the epoxy matrix. Meanwhile, the breakdown strength of the composite with 1 wt% BNNF is 122.9 kV/mm, which increased by 6.8% more than that of neat epoxy (115.1 kV/mm). Moreover, the composites have maintained a low dielectric constant and alternating current conductivity among the range of full frequency, and show a higher thermal decomposition temperature and glass-transition temperature. The composites with aligning BNNF have wide application prospects in electronic packaging material and printed circuit boards.

Alignment of Boron Nitride Nanofibers in Epoxy Composite Films for Thermal Conductivity and Dielectric Breakdown Strength Improvement

PubMed Central

Liu, Jingya; Cheng, Yonghong; Chen, Siyu; Yang, Mengmeng; Huang, Jialiang

2018-01-01

Development of polymer-based composites with simultaneously high thermal conductivity and breakdown strength has attracted considerable attention owing to their important applications in both electronic and electric industries. In this work, boron nitride (BN) nanofibers (BNNF) are successfully prepared as fillers, which are used for epoxy composites. In addition, the BNNF in epoxy composites are aligned by using a film casting method. The composites show enhanced thermal conductivity and dielectric breakdown strength. For instance, after doping with BNNF of 2 wt%, the thermal conductivity of composites increased by 36.4% in comparison with that of the epoxy matrix. Meanwhile, the breakdown strength of the composite with 1 wt% BNNF is 122.9 kV/mm, which increased by 6.8% more than that of neat epoxy (115.1 kV/mm). Moreover, the composites have maintained a low dielectric constant and alternating current conductivity among the range of full frequency, and show a higher thermal decomposition temperature and glass-transition temperature. The composites with aligning BNNF have wide application prospects in electronic packaging material and printed circuit boards. PMID:29662038

Electrostatic Discharge Properties of Irradiated Nanocomposites

DTIC Science & Technology

2009-03-01

47 24. Example Plot of Mean Current vs . Voltage Difference Curves ..................................48 25...across dielectric surfaces and prevent ESD arcing to very high voltage differentials (Figure 2) [7]. All of these drastic alterations in material...structure currents (3) Area thickness and dielectric strength of the material (4) Total charge involved in the event (5) Breakdown voltage (6) Current

A partial least squares based spectrum normalization method for uncertainty reduction for laser-induced breakdown spectroscopy measurements

NASA Astrophysics Data System (ADS)

Li, Xiongwei; Wang, Zhe; Lui, Siu-Lung; Fu, Yangting; Li, Zheng; Liu, Jianming; Ni, Weidou

2013-10-01

A bottleneck of the wide commercial application of laser-induced breakdown spectroscopy (LIBS) technology is its relatively high measurement uncertainty. A partial least squares (PLS) based normalization method was proposed to improve pulse-to-pulse measurement precision for LIBS based on our previous spectrum standardization method. The proposed model utilized multi-line spectral information of the measured element and characterized the signal fluctuations due to the variation of plasma characteristic parameters (plasma temperature, electron number density, and total number density) for signal uncertainty reduction. The model was validated by the application of copper concentration prediction in 29 brass alloy samples. The results demonstrated an improvement on both measurement precision and accuracy over the generally applied normalization as well as our previously proposed simplified spectrum standardization method. The average relative standard deviation (RSD), average of the standard error (error bar), the coefficient of determination (R2), the root-mean-square error of prediction (RMSEP), and average value of the maximum relative error (MRE) were 1.80%, 0.23%, 0.992, 1.30%, and 5.23%, respectively, while those for the generally applied spectral area normalization were 3.72%, 0.71%, 0.973, 1.98%, and 14.92%, respectively.

A multi-dielectric-layered triboelectric nanogenerator as energized by corona discharge.

PubMed

Shao, Jia Jia; Tang, Wei; Jiang, Tao; Chen, Xiang Yu; Xu, Liang; Chen, Bao Dong; Zhou, Tao; Deng, Chao Ran; Wang, Zhong Lin

2017-07-13

Triboelectric nanogenerators (TENGs) have been invented recently for meeting the power requirements of small electronics and potentially solving the worldwide energy crisis. Here, we developed a vertical contact-separation mode TENG based on a novel multi-dielectric-layered (MDL) structure, which was comprised of parylene C, polyimide and SiO 2 films. By using the corona discharge approach, the surface charge density was enhanced to as high as 283 μC m -2 , and especially the open-circuit voltage could be increased by a factor of 55 compared with the original value. Furthermore, the theoretical models were built to reveal the output characteristics and store the electrostatic energy of the TENG. The influences of the structural parameters and operation conditions including the effective dielectric thickness, dielectric constant, gap distance and air breakdown voltage were investigated systematically. It was found that the output performances such as the peak voltage and power density are approximately proportional to the thickness of the MDL film, but they would be restricted by the air breakdown voltage. These unique structures and models could be used to deepen the understanding of the fundamental mechanism of TENGs, and serve as an important guide for designing high performance TENGs.

BaTiO3/PVDF Nanocomposite Film with High Energy Storage Density

NASA Astrophysics Data System (ADS)

Wang, Xiaohui

2016-03-01

A gradated multilayer BaTiO3/poly(vinylidenefluoride) thin film structure is presented to achieve both a higher breakdown strength and a superior energy-storage capability. Key to the process is the sequential deposition of uniform dispersions of the single component source, which generate a blended PVDF-BTO-PVDF structure prior to full evaporation of solvent, and thermal treatment of the dielectric. The result is like sandwich structure with partial 0-3 character. The central layer designed to provide the high electric displacement, is composed of high volume fraction 6-10 nm BTO nanocrystals produced by a TEG-sol method. The outer layers of the structure are predominantly PVDF, with a significantly lower volume fraction of BTO, taking advantage of the higher dielectric strength for pure PVDF at the electrode-nanocomposite interface. The film is mechanically flexible, and can be removed from the substrate, with total thicknesses in the range 1.2 - 1.5 μm. Parallel plate capacitance devices improved dielectric performances, compared to reported values for BTO-PVDF 0-3 nanocomposites, with a maximal discharged energy density of 19.4J/cm3 and dielectric breakdown strengths of up to 495 kV/mm.

Technique for the comparison of light spectra from natural and laboratory generated lightning current arcs

NASA Astrophysics Data System (ADS)

Mitchard, D.; Clark, D.; Carr, D.; Haddad, A.

2016-08-01

A technique was developed for the comparison of observed emission spectra from lightning current arcs generated through self-breakdown in air and the use of two types of initiation wire, aluminum bronze and nichrome, against previously published spectra of natural lightning events. A spectrograph system was used in which the wavelength of light emitted by the lightning arc was analyzed to derive elemental interactions. A lightning impulse of up to 100 kA was applied to a two hemispherical tungsten electrode configuration which allowed the effect of the lightning current and lightning arc length to be investigated. A natural lightning reference spectrum was reconstructed from literature, and generated lightning spectra were obtained from self-breakdown across a 14.0 mm air gap and triggered along initiation wires of length up to 72.4 mm. A comparison of the spectra showed that the generated lightning arc induced via self-breakdown produced a very similar spectrum to that of natural lightning, with the addition of only a few lines from the tungsten electrodes. A comparison of the results from the aluminum bronze initiation wire showed several more lines, whereas results from the nichrome initiation wire differed greatly across large parts of the spectrum. This work highlights the potential use for spectrographic techniques in the study of lightning interactions with surrounding media and materials, and in natural phenomena such as recently observed ball lightning.

Temporal patterning of the potential induced by localized corrosion of iron passivity in acid media. Growth and breakdown of the oxide film described in terms of a point defect model.

PubMed

Sazou, Dimitra; Pavlidou, Maria; Pagitsas, Michael

2009-10-21

This work analyses the nature of temporal patterning of the anodic potential induced by chlorides during polarization of iron under current-controlled conditions in acid solutions. It is shown that potential oscillations emerged as a result of the local chloride attack of a thin oxide layer, which covers the iron surface in its passive state. The mechanism by which both the local oxide breakdown and the subsequent localized active dissolution (pitting) occur is explained by considering a point defect model (PDM) developed to describe the oxide growth and breakdown. According to the PDM, chlorides occupy oxygen vacancies resulting in the inhibition of oxide growth and autocatalytic generation of cation vacancies that destabilize the oxide layer. Simultaneous transformation of the outer surface of the inner oxide layer to non-adherent ferrous chloride or oxo-chloride species leads to a further thinning of the oxide layer and its lifting-on from the iron surface. The process repeats again yielding sustained oscillations of the anodic potential. Analysis of the oscillatory response obtained under current-controlled conditions as a function of either the current or the time allows the suggestion of a set of alternate diagnostic criteria, which might be used to characterize localized corrosion of iron in acid solutions.

Density separation as a strategy to reduce the enzyme load of preharvest sprouted wheat and enhance its bread making quality.

PubMed

Olaerts, Heleen; De Bondt, Yamina; Courtin, Christophe M

2018-02-15

As preharvest sprouting of wheat impairs its use in food applications, postharvest solutions for this problem are required. Due to the high kernel to kernel variability in enzyme activity in a batch of sprouted wheat, the potential of eliminating severely sprouted kernels based on density differences in NaCl solutions was evaluated. Compared to higher density kernels, lower density kernels displayed higher α-amylase, endoxylanase, and peptidase activities as well as signs of (incipient) protein, β-glucan and arabinoxylan breakdown. By discarding lower density kernels of mildly and severely sprouted wheat batches (11% and 16%, respectively), density separation increased flour FN of the batch from 280 to 345s and from 135 to 170s and increased RVA viscosity. This in turn improved dough handling, bread crumb texture and crust color. These data indicate that density separation is a powerful technique to increase the quality of a batch of sprouted wheat. Copyright © 2017 Elsevier Ltd. All rights reserved.

Particle in cell simulation of peaking switch for breakdown evaluation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Umbarkar, Sachin B.; Bindu, S.; Mangalvedekar, H.A.

2014-07-01

Marx generator connected to peaking capacitor and peaking switch can generate Ultra-Wideband (UWB) radiation. A new peaking switch is designed for converting the existing nanosecond Marx generator to a UWB source. The paper explains the particle in cell (PIC) simulation for this peaking switch, using MAGIC 3D software. This peaking switch electrode is made up of copper tungsten material and is fixed inside the hermitically sealed derlin material. The switch can withstand a gas pressure up to 13.5 kg/cm{sup 2}. The lower electrode of the switch is connected to the last stage of the Marx generator. Initially Marx generator (withoutmore » peaking stage) in air; gives the output pulse with peak amplitude of 113.75 kV and pulse rise time of 25 ns. Thus, we design a new peaking switch to improve the rise time of output pulse and to pressurize this peaking switch separately (i.e. Marx and peaking switch is at different pressure). The PIC simulation gives the particle charge density, current density, E counter plot, emitted electron current, and particle energy along the axis of gap between electrodes. The charge injection and electric field dependence on ionic dissociation phenomenon are briefly analyzed using this simulation. The model is simulated with different gases (N{sub 2}, H{sub 2}, and Air) under different pressure (2 kg/cm{sup 2}, 5 kg/cm{sup 2}, 10 kg/cm{sup 2}). (author)« less

Laser initiated spark development in an air gap.

PubMed

Lindner, F W; Rudolph, W; Brumme, G; Fischer, H

1975-09-01

Spark development is studied by 20-nsec image converter photography. A diffuse and transparent prechannel bridges the gap from the top of the metal vapor jet, which has counterelectrode potential. The prechannel cuts off the development of the cone shaped jet with increasing gap voltage. The final breakdown is initiated by a z-axis, laser induced filament, which expands into the prechannel volume within less, similar10 nsec. This interval represents the final high current thermalization phase of the breakdown. Thermal expansion of the initial spark channel (Braginskii) follows.

Integer channels in nonuniform non-equilibrium 2D systems

NASA Astrophysics Data System (ADS)

Shikin, V.

2018-01-01

We discuss the non-equilibrium properties of integer channels in nonuniform 2D electron (hole) systems in the presence of a strong magnetic field. The results are applied to a qualitative explanation of the Corbino disk current-voltage characteristics (IVC) in the quantum Hall effect (QHE) regime. Special consideration is paid to the so-called "QHE breakdown" effect, which is readily observed in both the Hall bar and Corbino geometries of the tested cells. The QHE breakdown is especially evident in the Corbino samples, allowing for a more in-depth study of these effects.

Human error and the search for blame

NASA Technical Reports Server (NTRS)

Denning, Peter J.

1989-01-01

Human error is a frequent topic in discussions about risks in using computer systems. A rational analysis of human error leads through the consideration of mistakes to standards that designers use to avoid mistakes that lead to known breakdowns. The irrational side, however, is more interesting. It conditions people to think that breakdowns are inherently wrong and that there is ultimately someone who is responsible. This leads to a search for someone to blame which diverts attention from: learning from the mistakes; seeing the limitations of current engineering methodology; and improving the discourse of design.

VUV absorption spectroscopy measurements of the role of fast neutral atoms in a high-power gap breakdown

NASA Astrophysics Data System (ADS)

Filuk, A. B.; Bailey, J. E.; Cuneo, M. E.; Lake, P. W.; Nash, T. J.; Noack, D. D.; Maron, Y.

2000-12-01

The maximum power achieved in a wide variety of high-power devices, including electron and ion diodes, z pinches, and microwave generators, is presently limited by anode-cathode gap breakdown. A frequently discussed hypothesis for this effect is ionization of fast neutral atoms injected throughout the anode-cathode gap during the power pulse. We describe a newly developed diagnostic tool that provides a direct test of this hypothesis. Time-resolved vacuum-ultraviolet absorption spectroscopy is used to directly probe fast neutral atoms with 1-mm spatial resolution in the 10-mm anode-cathode gap of the SABRE 5 MV, 1 TW applied-B ion diode. Absorption spectra collected during Ar RF glow discharges and with CO2 gas fills confirm the reliability of the diagnostic technique. Throughout the 50-100 ns ion diode pulses no measurable neutral absorption was seen, setting upper limits of (0.12-1.5)×1014 cm-3 for ground-state fast neutral atom densities of H, C, N, O, and F. The absence of molecular absorption bands also sets upper limits of (0.16-1.2)×1015 cm-3 for common simple molecules. These limits are low enough to rule out ionization of fast neutral atoms as a breakdown mechanism. Breakdown due to ionization of molecules is also found to be unlikely. This technique can now be applied to quantify the role of neutral atoms in other high-power devices.

Very Mild Hypothermia (35°C) Postischemia Reduces Infarct Volume and Blood/Brain Barrier Breakdown Following tPA Treatment in the Mouse.

PubMed

Cechmanek, Brian K; Tuor, Ursula I; Rushforth, David; Barber, Philip A

2015-12-01

Reperfusion therapies for stroke diminish in effectiveness and safety as time to treatment increases. Hypothermia neuroprotection for stroke is established, but its clinical translation has been hampered by uncertainties regarding optimal temperature and complications associated with moderate hypothermia. Also, hypothermia targeting temperatures of 32-33°C is associated with clinical and logistical problems related to induction and adverse side effects. We hypothesized that ischemic damage and tPA-exacerbated blood/brain barrier (BBB) breakdown produced following 30 minutes of middle cerebral artery occlusion and either 1 hour of saline or tPA infusion would be reduced by treatment with very mild cooling of 1.5°C for 48 hours followed by 24 hours of gradual rewarming. Infarct volume was reduced by 29.6% (p<0.001) and 41.9% (p<0.001) in hypothermic-tPA (Hypo_tPA)-treated and hypothermic-saline (Hypo_Sal)-treated animals compared to normothermic-tPA (Norm_tPA) and saline (Norm_Sal)-treated animals, respectively. Hypothermia also reduced IgG extravasation in tPA-treated, but not saline-treated groups compared to their normothermic controls (p<0.001). The ipsilateral-contralateral changes in optical density for IgG extravasation were 18.4% greater in the Norm_tPA than Norm_Sal (p<0.001) group. The ipsilateral-contralateral changes in optical density for IgG extravasation were reduced by 17.8% (p<0.001) in the Hypo_tPA compared to Norm_tPA group. No significant mean difference in IgG extravasation was seen between Hypo_tPA and Hypo_Sal groups (p>0.05). Very modest hypothermia to reduce the BBB breakdown could improve the availability and safety of reperfusion treatments for stroke.

A high-current rail-type gas switch with preionization by an additional corona discharge

DOE Office of Scientific and Technical Information (OSTI.GOV)

Antipov, E. I.; Belozerov, O. S.; Krastelev, E. G., E-mail: ekrastelev@yandex.ru

The characteristics of a high-current rail-type gas switch with preionization of the gas (air) in a spark gap by an additional corona discharge are investigated. The experiments were performed in a voltage range of 10–45 kV using a two-electrode switch consisting of two cylindrical electrodes with a diameter of 22 mm and a length of 100 mm and a set of laterally located corona-discharge needles. The requirements for the position and size of the needles are defined for which a corona discharge is ignited before a breakdown of the main gap and does not change to a sparking form, andmore » the entire length of the rail electrodes is efficiently used. The fulfillment of these requirements ensures stable operation of the switch with a small variation of the pulse breakdown voltage, which is not more than 1% for a fixed voltage-pulse rise time in the range from 150 ns to 3.5 μs. A short delay time of the switch breakdown makes it possible to control the two-electrode switch by an overvoltage pulse of nanosecond duration.« less

A model for foam formation, stability, and breakdown in glass-melting furnaces.

PubMed

van der Schaaf, John; Beerkens, Ruud G C

2006-03-01

A dynamic model for describing the build-up and breakdown of a glass-melt foam is presented. The foam height is determined by the gas flux to the glass-melt surface and the drainage rate of the liquid lamellae between the gas bubbles. The drainage rate is determined by the average gas bubble radius and the physical properties of the glass melt: density, viscosity, surface tension, and interfacial mobility. Neither the assumption of a fully mobile nor the assumption of a fully immobile glass-melt interface describe the observed foam formation on glass melts adequately. The glass-melt interface appears partially mobile due to the presence of surface active species, e.g., sodium sulfate and silanol groups. The partial mobility can be represented by a single, glass-melt composition specific parameter psi. The value of psi can be estimated from gas bubble lifetime experiments under furnace conditions. With this parameter, laboratory experiments of foam build-up and breakdown in a glass melt are adequately described, qualitatively and quantitatively by a set of ordinary differential equations. An approximate explicit relationship for the prediction of the steady-state foam height is derived from the fundamental model.

Megagauss-level magnetic field production in cm-scale auto-magnetizing helical liners pulsed to 500 kA in 125 ns

DOE PAGES

Shipley, Gabriel A.; Awe, Thomas James; Hutsel, Brian Thomas; ...

2018-05-03

We present Auto-magnetizing (AutoMag) liners [Slutz et al., Phys. Plasmas 24, 012704 (2017)] are designed to generate up to 100 T of axial magnetic field in the fuel for Magnetized Liner Inertial Fusion [Slutz et al., Phys. Plasmas 17, 056303 (2010)] without the need for external field coils. AutoMag liners (cylindrical tubes) are composed of discrete metallic helical conduction paths separated by electrically insulating material. Initially, helical current in the AutoMag liner produces internal axial magnetic field during a long (100 to 300 ns) current prepulse with an average current rise rate dI/dt=5 kA/ns. After the cold fuel is magnetized,more » a rapidly rising current (200 kA/ns) generates a calculated electric field of 64 MV/m between the helices. Such field is sufficient to force dielectric breakdown of the insulating material after which liner current is reoriented from helical to predominantly axial which ceases the AutoMag axial magnetic field production mechanism and the z-pinch liner implodes. Proof of concept experiments have been executed on the Mykonos linear transformer driver to measure the axial field produced by a variety of AutoMag liners and to evaluate what physical processes drive dielectric breakdown. Lastly, a range of field strengths have been generated in various cm-scale liners in agreement with magnetic transient simulations including a measured field above 90 T at I = 350 kA. By varying the helical pitch angle, insulator material, and insulator geometry, favorable liner designs have been identified for which breakdown occurs under predictable and reproducible field conditions.« less

Megagauss-level magnetic field production in cm-scale auto-magnetizing helical liners pulsed to 500 kA in 125 ns

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shipley, Gabriel A.; Awe, Thomas James; Hutsel, Brian Thomas

We present Auto-magnetizing (AutoMag) liners [Slutz et al., Phys. Plasmas 24, 012704 (2017)] are designed to generate up to 100 T of axial magnetic field in the fuel for Magnetized Liner Inertial Fusion [Slutz et al., Phys. Plasmas 17, 056303 (2010)] without the need for external field coils. AutoMag liners (cylindrical tubes) are composed of discrete metallic helical conduction paths separated by electrically insulating material. Initially, helical current in the AutoMag liner produces internal axial magnetic field during a long (100 to 300 ns) current prepulse with an average current rise rate dI/dt=5 kA/ns. After the cold fuel is magnetized,more » a rapidly rising current (200 kA/ns) generates a calculated electric field of 64 MV/m between the helices. Such field is sufficient to force dielectric breakdown of the insulating material after which liner current is reoriented from helical to predominantly axial which ceases the AutoMag axial magnetic field production mechanism and the z-pinch liner implodes. Proof of concept experiments have been executed on the Mykonos linear transformer driver to measure the axial field produced by a variety of AutoMag liners and to evaluate what physical processes drive dielectric breakdown. Lastly, a range of field strengths have been generated in various cm-scale liners in agreement with magnetic transient simulations including a measured field above 90 T at I = 350 kA. By varying the helical pitch angle, insulator material, and insulator geometry, favorable liner designs have been identified for which breakdown occurs under predictable and reproducible field conditions.« less

Megagauss-level magnetic field production in cm-scale auto-magnetizing helical liners pulsed to 500 kA in 125 ns

NASA Astrophysics Data System (ADS)

Shipley, G. A.; Awe, T. J.; Hutsel, B. T.; Slutz, S. A.; Lamppa, D. C.; Greenly, J. B.; Hutchinson, T. M.

2018-05-01

Auto-magnetizing (AutoMag) liners [Slutz et al., Phys. Plasmas 24, 012704 (2017)] are designed to generate up to 100 T of axial magnetic field in the fuel for Magnetized Liner Inertial Fusion [Slutz et al., Phys. Plasmas 17, 056303 (2010)] without the need for external field coils. AutoMag liners (cylindrical tubes) are composed of discrete metallic helical conduction paths separated by electrically insulating material. Initially, helical current in the AutoMag liner produces internal axial magnetic field during a long (100 to 300 ns) current prepulse with an average current rise rate d I / d t = 5 k A / n s . After the cold fuel is magnetized, a rapidly rising current ( 200 k A / n s ) generates a calculated electric field of 64 M V / m between the helices. Such field is sufficient to force dielectric breakdown of the insulating material after which liner current is reoriented from helical to predominantly axial which ceases the AutoMag axial magnetic field production mechanism and the z-pinch liner implodes. Proof of concept experiments have been executed on the Mykonos linear transformer driver to measure the axial field produced by a variety of AutoMag liners and to evaluate what physical processes drive dielectric breakdown. A range of field strengths have been generated in various cm-scale liners in agreement with magnetic transient simulations including a measured field above 90 T at I = 350 kA. By varying the helical pitch angle, insulator material, and insulator geometry, favorable liner designs have been identified for which breakdown occurs under predictable and reproducible field conditions.

Megavolt, Multigigawatt Pulsed Plasma Switch

NASA Technical Reports Server (NTRS)

Lee, Ja H.; Choi, Sang H.; Song, Kyo D.

1996-01-01

Plasma switch proposed for use in high-voltage, high-current pulse power system. Designed not only to out-perform conventional spark-gap switch but also relatively compact and lightweight. Features inverse-pinch configuration to prevent constriction of current sheets into filaments, plus multiple-ring-electrode structure to resist high-voltage breakdown.

Dark current, breakdown, and magnetic field effects in a multicell, 805MHz cavity

NASA Astrophysics Data System (ADS)

Norem, J.; Wu, V.; Moretti, A.; Popovic, M.; Qian, Z.; Ducas, L.; Torun, Y.; Solomey, N.

2003-07-01

We present measurements of dark currents and x rays in a six cell 805MHz cavity, taken as part of an rf development program for muon cooling, which requires high power, high stored energy, low frequency cavities operating in a strong magnetic field. We have done the first systematic study of the behavior of high power rf in a strong (2.5 4T) magnetic field. Our measurements extend over a very large dynamic range in current and provide good fits to the Fowler-Nordheim field emission model assuming mechanical structures produce field enhancements at the surface. The locally enhanced field intensities we derive at the tips of these emitters are very large, (˜10 GV/m), and should produce tensile stresses comparable to the tensile strength of the copper cavity walls and should be capable of causing breakdown events. We also compare our data with estimates of tensile stresses from a variety of accelerating structures. Preliminary studies of the internal surface of the cavity and window are presented, which show splashes of copper with many sharp cone shaped protrusions and wires which can explain the experimentally measured field enhancements. We discuss a “cold copper” breakdown mechanism and briefly review alternatives. We also discuss a number of effects due to the 2.5T solenoidal fields on the cavity such as altered field emission due to mechanical deformation of emitters, and dark current ring beams, which are produced from the irises by E×B drifts during the nonrelativistic part of the acceleration process.

Synthesis Mechanism of Low-Voltage Praseodymium Oxide Doped Zinc Oxide Varistor Ceramics Prepared Through Modified Citrate Gel Coating

PubMed Central

Abdullah, Wan Rafizah Wan; Zakaria, Azmi; Ghazali, Mohd Sabri Mohd

2012-01-01

High demands on low-voltage electronics have increased the need for zinc oxide (ZnO) varistors with fast response, highly non-linear current-voltage characteristics and energy absorption capabilities at low breakdown voltage. However, trade-off between breakdown voltage and grain size poses a critical bottle-neck in the production of low-voltage varistors. The present study highlights the synthesis mechanism for obtaining praseodymium oxide (Pr6O11) based ZnO varistor ceramics having breakdown voltages of 2.8 to 13.3 V/mm through employment of direct modified citrate gel coating technique. Precursor powder and its ceramics were examined by means of TG/DTG, FTIR, XRD and FESEM analyses. The electrical properties as a function of Pr6O11 addition were analyzed on the basis of I-V characteristic measurement. The breakdown voltage could be adjusted from 0.01 to 0.06 V per grain boundary by controlling the amount of Pr6O11 from 0.2 to 0.8 mol%, without alteration of the grain size. The non-linearity coefficient, α, varied from 3.0 to 3.5 and the barrier height ranged from 0.56 to 0.64 eV. Breakdown voltage and α lowering with increasing Pr6O11 content were associated to reduction in the barrier height caused by variation in O vacancies at grain boundary. PMID:22606043

Synthesis mechanism of low-voltage praseodymium oxide doped zinc oxide varistor ceramics prepared through modified citrate gel coating.

PubMed

Abdullah, Wan Rafizah Wan; Zakaria, Azmi; Ghazali, Mohd Sabri Mohd

2012-01-01

High demands on low-voltage electronics have increased the need for zinc oxide (ZnO) varistors with fast response, highly non-linear current-voltage characteristics and energy absorption capabilities at low breakdown voltage. However, trade-off between breakdown voltage and grain size poses a critical bottle-neck in the production of low-voltage varistors. The present study highlights the synthesis mechanism for obtaining praseodymium oxide (Pr(6)O(11)) based ZnO varistor ceramics having breakdown voltages of 2.8 to 13.3 V/mm through employment of direct modified citrate gel coating technique. Precursor powder and its ceramics were examined by means of TG/DTG, FTIR, XRD and FESEM analyses. The electrical properties as a function of Pr(6)O(11) addition were analyzed on the basis of I-V characteristic measurement. The breakdown voltage could be adjusted from 0.01 to 0.06 V per grain boundary by controlling the amount of Pr(6)O(11) from 0.2 to 0.8 mol%, without alteration of the grain size. The non-linearity coefficient, α, varied from 3.0 to 3.5 and the barrier height ranged from 0.56 to 0.64 eV. Breakdown voltage and α lowering with increasing Pr(6)O(11) content were associated to reduction in the barrier height caused by variation in O vacancies at grain boundary.

Experimental study of low-temperature plasma of electrical discharges with liquid electrodes

NASA Astrophysics Data System (ADS)

Zheltukhin, Viktor; Gaisin, Almaz

2016-09-01

Results of the experimental research of discharge between the liquid jet cathode (LJC) and the metal anode are presented. The discharge was studied over the voltage range U = 100 - 600 V, discharge current range I = 0 . 1 - 0 . 25 A, external pressure range P =105 Pa, discharge power Pd = 10 - 150 W. We used the techniques of infrared thermography and spectral measurements. Schlieren's photography is applied for describing the processes in liquid and gas phase. Results of the experimental researches of discharge current-voltage characteristic (CVC), the surface temperature distribution both on the LJC and the metal anode, a spectral measurements are showed. Effects of action both of breakdown and discharge on the jet flow as well as on the air flow near the discharge are described. It is found that the discharge CVC has an ascending behavior due to increase of plasma current density. The discharge is generated on the borders between the LJC and the metal anode as well as along the LJC misshaping this one. It is established that both the convection streams and an electrolyte drops are formed during the discharge burn. It is found that the discharge temperature in the vicinity of electrode surface reaches T 348 K. The work was funded by RFBR, according to the research projects No.,14-01-0755.

Enhanced two dimensional electron gas transport characteristics in Al2O3/AlInN/GaN metal-oxide-semiconductor high-electron-mobility transistors on Si substrate

NASA Astrophysics Data System (ADS)

Freedsman, J. J.; Watanabe, A.; Urayama, Y.; Egawa, T.

2015-09-01

The authors report on Al2O3/Al0.85In0.15N/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistor (MOS-HEMT) on Si fabricated by using atomic layer deposited Al2O3 as gate insulator and passivation layer. The MOS-HEMT with the gate length of 2 μm exhibits excellent direct-current (dc) characteristics with a drain current maximum of 1270 mA/mm at a gate bias of 3 V and an off-state breakdown voltage of 180 V for a gate-drain spacing of 4 μm. Also, the 1 μm-gate MOS-HEMT shows good radio-frequency (rf) response such as current gain and maximum oscillation cut-off frequencies of 10 and 34 GHz, respectively. The capacitance-voltage characteristics at 1 MHz revealed significant increase in two-dimensional electron gas (2DEG) density for the MOS-HEMT compared to conventional Schottky barrier HEMTs. Analyses using drain-source conductivity measurements showed improvements in 2DEG transport characteristics for the MOS-HEMT. The enhancements in dc and rf performances of the Al2O3/Al0.85In0.15N/GaN MOS-HEMT are attributed to the improvements in 2DEG characteristics.

Progress in American Superconductor's HTS wire and optimization for fault current limiting systems

NASA Astrophysics Data System (ADS)

Malozemoff, Alexis P.

2016-11-01

American Superconductor has developed composite coated conductor tape-shaped wires using high temperature superconductor (HTS) on a flexible substrate with laminated metal stabilizer. Such wires enable many applications, each requiring specific optimization. For example, coils for HTS rotating machinery require increased current density J at 25-50 K. A collaboration with Argonne, Brookhaven and Los Alamos National Laboratories and several universities has increased J using an optimized combination of precipitates and ion irradiation defects in the HTS. Major commercial opportunities also exist to enhance electric power grid resiliency by linking substations with distribution-voltage HTS power cables [10]. Such links provide alternative power sources if one substation's transmission-voltage power is compromised. But they must also limit fault currents which would otherwise be increased by such distribution-level links. This can be done in an HTS cable, exploiting the superconductor-to-resistive transition when current exceeds the wires' critical J. A key insight is that such transitions are usually nonuniform; so the wire must be designed to prevent localized hot spots from damaging the wire or even generating gas bubbles in the cable causing dielectric breakdown. Analysis shows that local heating can be minimized by increasing the composite tape's total thickness, decreasing its total resistance in the normal state and decreasing its critical J. This conflicts with other desirable wire characteristics. Optimization of these conflicting requirements is discussed.

Low-density plasma formation in aqueous biological media using sub-nanosecond laser pulses

NASA Astrophysics Data System (ADS)

Genc, Suzanne L.; Ma, Huan; Venugopalan, Vasan

2014-08-01

We demonstrate the formation of low- and high-density plasmas in aqueous media using sub-nanosecond laser pulses delivered at low numerical aperture (NA = 0.25). We observe two distinct regimes of plasma formation in deionized water, phosphate buffered saline, Minimum Essential Medium (MEM), and MEM supplemented with phenol red. Optical breakdown is first initiated in a low-energy regime and characterized by bubble formation without plasma luminescence with threshold pulse energies in the range of Ep ≈ 4-5 μJ, depending on media formulation. The onset of this regime occurs over a very narrow interval of pulse energies and produces small bubbles (Rmax = 2-20 μm) due to a tiny conversion (η < 0.01%) of laser energy to bubble energy EB. The lack of visible plasma luminescence, sharp energy onset, and low bubble energy conversion are all hallmarks of low-density plasma (LDP) formation. At higher pulse energies (Ep = 11-20 μJ), the process transitions to a second regime characterized by plasma luminescence and large bubble formation. Bubbles formed in this regime are 1-2 orders of magnitude larger in size ( R max ≳ 100 μ m ) due to a roughly two-order-of-magnitude increase in bubble energy conversion (η ≳ 3%). These characteristics are consistent with high-density plasma formation produced by avalanche ionization and thermal runaway. Additionally, we show that supplementation of MEM with fetal bovine serum (FBS) limits optical breakdown to this high-energy regime. The ability to produce LDPs using sub-nanosecond pulses focused at low NA in a variety of cell culture media formulations without FBS can provide for cellular manipulation at high throughput with precision approaching that of femtosecond pulses delivered at high NA.

High dielectric constant and energy density induced by the tunable TiO2 interfacial buffer layer in PVDF nanocomposite contained with core-shell structured TiO2@BaTiO3 nanoparticles

NASA Astrophysics Data System (ADS)

Hu, Penghao; Jia, Zhuye; Shen, Zhonghui; Wang, Peng; Liu, Xiaoru

2018-05-01

To realize application in high-capacity capacitors and portable electric devices, large energy density is eagerly desired for polymer-based nanocomposite. The core-shell structured nanofillers with inorganic buffer layer are recently supposed to be promising in improving the dielectric property of polymer nanocomposite. In this work, core-shell structured TO@BT nanoparticles with crystalline TiO2 buffer layer coated on BaTiO3 nanoparticle were fabricated via solution method and heat treatment. The thickness of the TO buffer layer can be tailored by modulating the additive amount of the titanate coupling agent in preparation process, and the apparent dielectric properties of nanocomposite are much related to the thickness of the TO layer. The relatively thin TO layer prefer to generate high polarization to increase dielectric constant while the relatively thick TO layer would rather to homogenize field to maintain breakdown strength. Simulation of electric field distribution in the interfacial region reveals the improving effect of the TO buffer layer on the dielectric properties of nanocomposite which accords with the experimental results well. The optimized nanoparticle TO@BT-2 with a mean thickness of 3-5 nm buffer layer of TO is effective in increasing both the ε and Eb in the PVDF composite film. The maximal discharged energy density of 8.78 J/cm3 with high energy efficiency above 0.6 is obtained in TO@BT-2/PVDF nanocomposite with 2.5 vol% loading close to the breakdown strength of 380 kV/mm. The present study demonstrates the approach to optimize the structure of core-shell nanoparticles by modulating buffer layer and provides a new way to further enlarge energy density in polymer nanocomposite.

Boron nitride as two dimensional dielectric: Reliability and dielectric breakdown

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ji, Yanfeng; Pan, Chengbin; Hui, Fei

2016-01-04

Boron Nitride (BN) is a two dimensional insulator with excellent chemical, thermal, mechanical, and optical properties, which make it especially attractive for logic device applications. Nevertheless, its insulating properties and reliability as a dielectric material have never been analyzed in-depth. Here, we present the first thorough characterization of BN as dielectric film using nanoscale and device level experiments complementing with theoretical study. Our results reveal that BN is extremely stable against voltage stress, and it does not show the reliability problems related to conventional dielectrics like HfO{sub 2}, such as charge trapping and detrapping, stress induced leakage current, and untimelymore » dielectric breakdown. Moreover, we observe a unique layer-by-layer dielectric breakdown, both at the nanoscale and device level. These findings may be of interest for many materials scientists and could open a new pathway towards two dimensional logic device applications.« less

Characterization of breakdown behavior of diamond Schottky barrier diodes using impact ionization coefficients

NASA Astrophysics Data System (ADS)

Driche, Khaled; Umezawa, Hitoshi; Rouger, Nicolas; Chicot, Gauthier; Gheeraert, Etienne

2017-04-01

Diamond has the advantage of having an exceptionally high critical electric field owing to its large band gap, which implies its high ability to withstand high voltages. At this maximum electric field, the operation of Schottky barrier diodes (SBDs), as well as FETs, may be limited by impact ionization, leading to avalanche multiplication, and hence the devices may breakdown. In this study, three of the reported impact ionization coefficients for electrons, αn, and holes, αp, in diamond at room temperature (300 K) are analyzed. Experimental data on reverse operation characteristics obtained from two different diamond SBDs are compared with those obtained from their corresponding simulated structures. Owing to the crucial role played by the impact ionization rate in determining the carrier transport, the three reported avalanche parameters implemented affect the behavior not only of the breakdown voltage but also of the leakage current for the same structure.

Grain-scale supercharging and breakdown on airless regoliths

NASA Astrophysics Data System (ADS)

Zimmerman, M. I.; Farrell, W. M.; Hartzell, C. M.; Wang, X.; Horanyi, M.; Hurley, D. M.; Hibbitts, K.

2016-10-01

Interactions of the solar wind and emitted photoelectrons with airless bodies have been studied extensively. However, the details of how charged particles interact with the regolith at the scale of a single grain have remained largely uncharacterized. Recent efforts have focused upon determining total surface charge under photoemission and solar wind bombardment and the associated electric field and potential. In this work, theory and simulations are used to show that grain-grain charge differences can exceed classical sheath predictions by several orders of magnitude, sometimes reaching dielectric breakdown levels. Temperature-dependent electrical conductivity works against supercharging by allowing current to leak through individual grains; the balance between internal conduction and surface charging controls the maximum possible grain-to-grain electric field. Understanding the finer details of regolith grain charging, conductive equilibrium, and dielectric breakdown will improve future numerical studies of space weathering and dust levitation on airless bodies.

Cu-Induced Dielectric Breakdown of Porous Low-Dielectric-Constant Film

NASA Astrophysics Data System (ADS)

Cheng, Yi-Lung; Lee, Chih-Yen; Huang, Yao-Liang; Sun, Chung-Ren; Lee, Wen-Hsi; Chen, Giin-Shan; Fang, Jau-Shiung; Phan, Bach Thang

2017-06-01

Dielectric breakdown induced by Cu ion migration in porous low- k dielectric films has been investigated in alternating-polarity bias conditions using a metal-insulator-metal capacitor with Cu top metal electrode. The experimental results indicated that Cu ions migrated into the dielectric film under stress with positive polarity, leading to weaker dielectric strength and shorter time to failure (TTF). In the alternating-polarity test, the measured TTFs increased with decreasing stressing frequency, implying backward migration of Cu ions during reverse-bias stress. Additionally, compared with a direct-current stress condition, the measured TTFs were higher as the frequency was decreased to 10-2 Hz. The electric-field acceleration factor for porous low- k dielectric film breakdown in the alternating-polarity test was also found to increase. This Cu backward migration effect is effective when the stressing time under negative polarity is longer than 0.1 s.

Advances in high gradient normal conducting accelerator structures

DOE PAGES

Simakov, Evgenya Ivanovna; Dolgashev, Valery A.; Tantawi, Sami G.

2018-03-09

Here, this paper reviews the current state-of-the-art in understanding the phenomena of ultra-high vacuum radio-frequency (rf) breakdown in accelerating structures and the efforts to improve stable operation of the structures at accelerating gradients above 100 MV/m. Numerous studies have been conducted recently with the goal of understanding the dependence of the achievable accelerating gradients and breakdown rates on the frequency of operations, the geometry of the structure, material and method of fabrication, and operational temperature. Tests have been conducted with single standing wave accelerator cells as well as with the multi-cell traveling wave structures. Notable theoretical effort was directed atmore » understanding the physical mechanisms of the rf breakdown and its statistical behavior. Finally, the achievements presented in this paper are the result of the large continuous self-sustaining collaboration of multiple research institutions in the United States and worldwide.« less

Advances in high gradient normal conducting accelerator structures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Simakov, Evgenya Ivanovna; Dolgashev, Valery A.; Tantawi, Sami G.

Here, this paper reviews the current state-of-the-art in understanding the phenomena of ultra-high vacuum radio-frequency (rf) breakdown in accelerating structures and the efforts to improve stable operation of the structures at accelerating gradients above 100 MV/m. Numerous studies have been conducted recently with the goal of understanding the dependence of the achievable accelerating gradients and breakdown rates on the frequency of operations, the geometry of the structure, material and method of fabrication, and operational temperature. Tests have been conducted with single standing wave accelerator cells as well as with the multi-cell traveling wave structures. Notable theoretical effort was directed atmore » understanding the physical mechanisms of the rf breakdown and its statistical behavior. Finally, the achievements presented in this paper are the result of the large continuous self-sustaining collaboration of multiple research institutions in the United States and worldwide.« less

Effect of the scheme of plasmachemical processes on the calculated characteristics of a barrier discharge in xenon

DOE Office of Scientific and Technical Information (OSTI.GOV)

Avtaeva, S. V.; Kulumbaev, E. B.

2008-06-15

The dynamics of a repetitive barrier discharge in xenon at a pressure of 400 Torr is simulated using a one-dimensional drift-diffusion model. The thicknesses of identical barriers with a dielectric constant of 4 are 2 mm, and the gap length is 4 mm. The discharge is fed with an 8-kV ac voltage at a frequency of 25 or 50 kHz. The development of the ionization wave and the breakdown and afterglow phases of a barrier discharge are analyzed using two different kinetic schemes of elementary processes in a xenon plasma. It is shown that the calculated waveforms of the dischargemore » voltage and current, the instant of breakdown, and the number of breakdowns per voltage half-period depend substantially on the properties of the kinetic scheme of plasmachemical processes.« less

Effects of thermal and electrical stressing on the breakdown behavior of space wiring

NASA Technical Reports Server (NTRS)

Hammoud, Ahmad; Stavnes, Mark; Suthar, Jayant; Laghari, Javaid

1995-01-01

Several failures in the electrical wiring systems of many aircraft and space vehicles have been attributed to arc tracking and damaged insulation. In some instances, these failures proved to be very costly as they have led to the loss of many aircraft and imperilment of space missions. Efforts are currently underway to develop lightweight, reliable, and arc track resistant wiring for aerospace applications. In this work, six wiring constructions were evaluated in terms of their breakdown behavior as a function of temperature. These hybrid constructions employed insulation consisting of Kapton, Teflon, and cross-linked Tefzel. The properties investigated included the 400 Hz AC dielectric strength at ambient and 200 C, and the lifetime at high temperature with an applied bias of 40, 60, and 80% of breakdown voltage level. The results obtained are discussed, and conclusions are made concerning the suitability of the wiring constructions investigated for aerospace applications.

A 700 V narrow channel nJFET with low pinch-off voltage and suppressed drain-induced barrier lowering effect

NASA Astrophysics Data System (ADS)

Mao, Kun; Qiao, Ming; Zhang, WenTong; Zhang, Bo; Li, Zhaoji

2014-11-01

This paper proposes a 700 V narrow channel region triple-RESURF (reduced surface field) n-type junction field-effect transistor (NCT-nJFET). Compared to traditional structures, low pinch-off voltage (VP) with unobvious drain-induced barrier lowering (DIBL) effect and large saturated current (IDsat) are achieved. This is because p-type buried layer (Pbury) and PWELL are introduced to shape narrow n-type channel in JFET channel region. DIBL sensitivity (SDIBL) is firstly introduced in this paper to analyze the DIBL effect of high-voltage long-channel JFET. Ultra-high breakdown voltage is obtained by triple RESURF technology. Experimental results show that proposed NCT-nJFET achieves 24-V VP, 3.5% SDIBL, 2.3-mA IDsat, 800-V OFF-state breakdown voltage (OFF-BV) and 650-V ON-state breakdown voltage when VGS equals 0 V (ON-BV).

Effects of thermal and electrical stressing on the breakdown behavior of space wiring

NASA Astrophysics Data System (ADS)

Hammoud, Ahmad; Stavnes, Mark; Suthar, Jayant; Laghari, Javaid

1995-06-01

Several failures in the electrical wiring systems of many aircraft and space vehicles have been attributed to arc tracking and damaged insulation. In some instances, these failures proved to be very costly as they have led to the loss of many aircraft and imperilment of space missions. Efforts are currently underway to develop lightweight, reliable, and arc track resistant wiring for aerospace applications. In this work, six wiring constructions were evaluated in terms of their breakdown behavior as a function of temperature. These hybrid constructions employed insulation consisting of Kapton, Teflon, and cross-linked Tefzel. The properties investigated included the 400 Hz AC dielectric strength at ambient and 200 C, and the lifetime at high temperature with an applied bias of 40, 60, and 80% of breakdown voltage level. The results obtained are discussed, and conclusions are made concerning the suitability of the wiring constructions investigated for aerospace applications.

Grain-Scale Supercharging and Breakdown on Airless Regoliths

NASA Technical Reports Server (NTRS)

Zimmerman, M. I.; Farrell, W. M.; Hartzell, C.M.; Wang, X.; Horanyi, M.; Hurley, D. M.; Hibbitts, K.

2016-01-01

Interactions of the solar wind and emitted photoelectrons with airless bodies have been studied extensively. However, the details of how charged particles interact with the regolith at the scale of a single grain have remained largely uncharacterized. Recent efforts have focused upon determining total surface charge under photoemission and solar wind bombardment and the associated electric field and potential. In this work, theory and simulations are used to show that grain-grain charge differences can exceed classical sheath predictions by several orders of magnitude, sometimes reaching dielectric breakdown levels. Temperature-dependent electrical conductivity works against supercharging by allowing current to leak through individual grains; the balance between internal conduction and surface charging controls the maximum possible grain-to-grain electric field. Understanding the finer details of regolith grain charging, conductive equilibrium, and dielectric breakdown will improve future numerical studies of space weathering and dust levitation on airless bodies.

Growth and characterization of AlGaN/GaN/AlGaN double-heterojunction high-electron-mobility transistors on 100-mm Si(111) using ammonia-molecular beam epitaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ravikiran, L.; Radhakrishnan, K., E-mail: ERADHA@ntu.edu.sg; Yiding, Lin

2015-01-14

To improve the confinement of two-dimensional electron gas (2DEG) in AlGaN/GaN high electron mobility transistor (HEMT) heterostructures, AlGaN/GaN/AlGaN double heterojunction HEMT (DH-HEMT) heterostructures were grown using ammonia-MBE on 100-mm Si substrate. Prior to the growth, single heterojunction HEMT (SH-HEMT) and DH-HEMT heterostructures were simulated using Poisson-Schrödinger equations. From simulations, an AlGaN buffer with “Al” mole fraction of 10% in the DH-HEMT was identified to result in both higher 2DEG concentration (∼10{sup 13 }cm{sup −2}) and improved 2DEG confinement in the channel. Hence, this composition was considered for the growth of the buffer in the DH-HEMT heterostructure. Hall measurements showed a roommore » temperature 2DEG mobility of 1510 cm{sup 2}/V.s and a sheet carrier concentration (n{sub s}) of 0.97 × 10{sup 13 }cm{sup −2} for the DH-HEMT structure, while they are 1310 cm{sup 2}/V.s and 1.09 × 10{sup 13 }cm{sup −2}, respectively, for the SH-HEMT. Capacitance-voltage measurements confirmed the improvement in the confinement of 2DEG in the DH-HEMT heterostructure, which helped in the enhancement of its room temperature mobility. DH-HEMT showed 3 times higher buffer break-down voltage compared to SH-HEMT, while both devices showed almost similar drain current density. Small signal RF measurements on the DH-HEMT showed a unity current-gain cut-off frequency (f{sub T}) and maximum oscillation frequency (f{sub max}) of 22 and 25 GHz, respectively. Thus, overall, DH-HEMT heterostructure was found to be advantageous due to its higher buffer break-down voltages compared to SH-HEMT heterostructure.« less

Kinetic Modeling of RF Breakdown in High-Pressure Gas-filled Cavities

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tollestrup, A. V.; Yonehara, K.; Byrd, J. M.

2012-05-01

Recent studies have shown that high gradients can be achieved quickly in high-pressure gas-filled cavities without the need for long conditioning times, because the dense gas can dramatically reduce dark currents and multipacting. In this proj ect we use this high pressure technique to suppress effects of residual vacuum and geometry found in evacuated cavities to isolate and study the role of the metallic surfaces in RF cavity breakdown as a function of radiofrequency and surface preparation. A series of experiments at 805 MHz using hydrogen fill pressures up to 0.01 g/cm3 of H2 have demonstrated high electric field gradientsmore » and scaling with the DC Paschen law limit, up to ~30 MV/m, depending on the choice of electrode material. For higher fi eld stresses, the breakdown characteristics deviate from the Paschen law scaling. Fully-kinetic 0D collisional particle-in-cell (PIC) simulations give breakdown characteristics in H2 and H2/SF6 mixtures in good agreement with the 805 MHz experimental resu lts below this field stress threshold. The impact of these results on gas-filled RF accelerating cavity design will be discussed.« less

Ga2O3 Schottky barrier and heterojunction diodes for power electronics applications

NASA Astrophysics Data System (ADS)

Tadjer, Marko J.; Mahadik, Nadeemullah A.; Freitas, Jaime A.; Glaser, Evan R.; Koehler, Andrew D.; Luna, Lunet E.; Feigelson, Boris N.; Hobart, Karl D.; Kub, Fritz J.; Kuramata, A.

2018-02-01

We present novel approaches for the development of Ga2O3 Schottky barrier and heterojunction diodes. Samples of β- Ga2O3 were first annealed in N2 and O2 to demonstrate the effect of annealing on the carrier concentration. Cathodoluminescence and electron spin resonance measurements were also performed. Schottky barrier diodes on asgrown and O2-annealed epitaxial Ga2O3 films were fabricated and breakdown voltages were compared. Lower reverse current and a breakdown voltage of about 857 V were measured on the O2-annealed device. Finally, we report preliminary results from the development of anisotype heterojunctions between n-type Ga2O3 with a sputtered NiO layer. Rectifying current-voltage characteristics were obtained when the NiO was deposited both at room temperature and at 450 °C.

Breakdown voltage mapping through voltage dependent ReBEL intensity imaging of multi-crystalline Si solar cells

NASA Astrophysics Data System (ADS)

Dix-Peek, RM.; van Dyk, EE.; Vorster, FJ.; Pretorius, CJ.

2018-04-01

Device material quality affects both the efficiency and the longevity of photovoltaic (PV) cells. Therefore, identifying these defects can be beneficial in the development of more efficient and longer lasting PV cells. In this study, a combination of spatially-resolved, electroluminescence (EL), and light beam induced current (LBIC) measurements, were used to identify specific defects and features of a multi-crystalline Si PV cells. In this study, a novel approach is used to map the breakdown voltage of a PV cell through voltage dependent Reverse Bias EL (ReBEL) intensity imaging.

Technique for the comparison of light spectra from natural and laboratory generated lightning current arcs

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mitchard, D., E-mail: mitcharddr@cardiff.ac.uk; Clark, D.; Carr, D.

A technique was developed for the comparison of observed emission spectra from lightning current arcs generated through self-breakdown in air and the use of two types of initiation wire, aluminum bronze and nichrome, against previously published spectra of natural lightning events. A spectrograph system was used in which the wavelength of light emitted by the lightning arc was analyzed to derive elemental interactions. A lightning impulse of up to 100 kA was applied to a two hemispherical tungsten electrode configuration which allowed the effect of the lightning current and lightning arc length to be investigated. A natural lightning reference spectrum wasmore » reconstructed from literature, and generated lightning spectra were obtained from self-breakdown across a 14.0 mm air gap and triggered along initiation wires of length up to 72.4 mm. A comparison of the spectra showed that the generated lightning arc induced via self-breakdown produced a very similar spectrum to that of natural lightning, with the addition of only a few lines from the tungsten electrodes. A comparison of the results from the aluminum bronze initiation wire showed several more lines, whereas results from the nichrome initiation wire differed greatly across large parts of the spectrum. This work highlights the potential use for spectrographic techniques in the study of lightning interactions with surrounding media and materials, and in natural phenomena such as recently observed ball lightning.« less

Effects of increasing temperature and, CO2 on quality of litter, shredders, and microorganisms in Amazonian aquatic systems

PubMed Central

Rezende, Renan de Souza; Gonçalves Júnior, José Francisco; Lopes, Aline; Piedade, Maria Teresa Fernandez; Cavalcante, Heloide de Lima; Hamada, Neusa

2017-01-01

Climate change may affect the chemical composition of riparian leaf litter and, aquatic organisms and, consequently, leaf breakdown. We evaluated the effects of different scenarios combining increased temperature and carbon dioxide (CO2) on leaf detritus of Hevea spruceana (Benth) Müll. and decomposers (insect shredders and microorganisms). We hypothesized that simulated climate change (warming and elevated CO2) would: i) decrease leaf-litter quality, ii) decrease survival and leaf breakdown by shredders, and iii) increase microbial leaf breakdown and fungal biomass. We performed the experiment in four microcosm chambers that simulated air temperature and CO2 changes in relation to a real-time control tracking current conditions in Manaus, Amazonas, Brazil. The experiment lasted seven days. During the experiment mean air temperature and CO2 concentration ranged from 26.96 ± 0.98ºC and 537.86 ± 18.36 ppmv in the control to 31.75 ± 0.50ºC and 1636.96 ± 17.99 ppmv in the extreme chamber, respectively. However, phosphorus concentration in the leaf litter decreased with warming and elevated CO2. Leaf quality (percentage of carbon, nitrogen, phosphorus, cellulose and lignin) was not influenced by soil flooding. Fungal biomass and microbial leaf breakdown were positively influenced by temperature and CO2 increase and reached their highest values in the intermediate condition. Both total and shredder leaf breakdown, and shredder survival rate were similar among all climatic conditions. Thus, low leaf-litter quality due to climate change and higher leaf breakdown under intermediate conditions may indicate an increase of riparian metabolism due to temperature and CO2 increase, highlighting the risk (e.g., decreased productivity) of global warming for tropical streams. PMID:29190723

On-line determination of nanometric and sub-micrometric particle physicochemical characteristics using spectral imaging-aided Laser-Induced Breakdown Spectroscopy coupled with a Scanning Mobility Particle Sizer

NASA Astrophysics Data System (ADS)

Amodeo, Tanguy; Dutouquet, Christophe; Le Bihan, Olivier; Attoui, Michel; Frejafon, Emeric

2009-10-01

Laser-Induced Breakdown Spectroscopy has been employed to detect sodium chloride and metallic particles with sizes ranging from 40 nm up to 1 µm produced by two different particle generators. The Laser-Induced Breakdown Spectroscopy technique combined with a Scanning Mobility Particle Sizer was evaluated as a potential candidate for workplace surveillance in industries producing nanoparticle-based materials. Though research is still currently under way to secure nanoparticle production processes, the risk of accidental release is not to be neglected. Consequently, there is an urgent need for the manufacturers to have at their command a tool enabling leak detection in-situ and in real time so as to protect workers from potential exposure. In this context, experiments dedicated to laser-induced plasma particle interaction were performed. To begin with, spectral images of the laser-induced plasma vaporizing particles were recorded to visualize the spatio-temporal evolution of the atomized matter and to infer the best recording parameters for Laser-Induced Breakdown Spectroscopy analytical purposes, taking into account our experimental set-up specificity. Then, on this basis, time-resolved spectroscopic measurements were performed to make a first assumption of the Laser-Induced Breakdown Spectroscopy potentialities. Particle size dependency on the LIBS signal was examined. Repeatability and limits of detection were assessed and discussed. All the experiments carried out with low particle concentrations point out the high time delays corresponding to the Laser-Induced Breakdown Spectroscopy signal emergence. Plasma temperature temporal evolution was found to be a key parameter to explain this peculiarity inherent to laser/plasma/particle interaction.

Recent advances of high voltage AlGaN/GaN power HFETs

NASA Astrophysics Data System (ADS)

Uemoto, Yasuhiro; Ueda, Tetsuzo; Tanaka, Tsuyoshi; Ueda, Daisuke

2009-02-01

We review our recent advances of GaN-based high voltage power transistors. These are promising owing to low on-state resistance and high breakdown voltage taking advantages of superior material properties. However, there still remain a couple of technical issues to be solved for the GaN devices to replace the existing Si-based power devices. The most critical issue is to achieve normally-off operation which is strongly desired for the safety operation, however, it has been very difficult because of the built-in polarization electric field. Our new device called GIT (Gate Injection Transistor) utilizing conductivity modulation successfully achieves the normally-off operation keeping low on-state resistance. The fabricated GIT on a Si substrate exhibits threshold voltage of +1.0V. The obtained on-state resistance and off-state breakdown voltage were 2.6mΩ•cm2 and 800V, respectively. Remaining technical issue is to further increase the breakdown voltage. So far, the reported highest off-state breakdown voltage of AlGaN/GaN HFETs has been 1900V. Overcoming these issues by a novel device structure, we have demonstrated the world highest breakdown voltages of 10400V using thick poly-crystalline AlN as a passivation film and Via-holes through sapphire which enable very efficient layout of the lateral HFET array avoiding any undesired breakdown of passivation films. Since conventional wet or dry etching cannot be used for chemically stable sapphire, high power pulsed laser is used to form the via-holes. The presented GaN power devices demonstrate that GaN is advantageous for high voltage power switching applications replacing currently used Si-based power MOSFETs and IGBTs.

Characteristic properties of the frame-antenna-produced RF discharge evolution in the Uragan-3M torsatron

NASA Astrophysics Data System (ADS)

Chechkin, V. V.; Grigor'eva, L. I.; Pavlichenko, R. O.; Kulaga, A. Ye.; Zamanov, N. V.; Moiseenko, V. E.; Burchenko, P. Ya.; Lozin, A. V.; Tsybenko, S. A.; Tarasov, I. K.; Pankratov, I. M.; Grekov, D. L.; Beletskii, A. A.; Kasilov, A. A.; Voitsenya, V. S.; Pashnev, V. K.; Konovalov, V. G.; Shapoval, A. N.; Mironov, Yu. K.; Romanov, V. S.

2014-08-01

In the ℓ = 3 Uragan-3M torsatron, hydrogen plasma is produced and heated by RF fields in the Alfvén range of frequencies (ω ≲ ω ci ). To this end, a frame antenna with a broad spectrum of generated parallel wavenumbers is used. The RF discharge evolution is studied experimentally at different values of the RF power fed to the antenna (the anode voltage of the oscillator and the antenna current) and the initial pressure of the fueling gas. It is shown that, depending on the antenna current and hydrogen pressure, the discharge can operate in two regimes differing in the plasma density, temperature, and particle loss. The change in the discharge regime with increasing anode voltage is steplike in character. The particular values of the anode voltage and pressure at which the change occurs are affected by RF preionization or breakdown stabilization by a microwave discharge. The obtained results will be used in future experiments to choose the optimal regimes of the frame-antenna-produced RF discharge as a target for the production and heating of a denser plasma by another, shorter wavelength three-half-turn antenna.

Microfabricated Ion Beam Drivers for Magnetized Target Fusion

NASA Astrophysics Data System (ADS)

Persaud, Arun; Seidl, Peter; Ji, Qing; Ardanuc, Serhan; Miller, Joseph; Lal, Amit; Schenkel, Thomas

2015-11-01

Efficient, low-cost drivers are important for Magnetized Target Fusion (MTF). Ion beams offer a high degree of control to deliver the required mega joules of driver energy for MTF and they can be matched to several types of magnetized fuel targets, including compact toroids and solid targets. We describe an ion beam driver approach based on the MEQALAC concept (Multiple Electrostatic Quadrupole Array Linear Accelerator) with many beamlets in an array of micro-fabricated channels. The channels consist of a lattice of electrostatic quadrupoles (ESQ) for focusing and of radio-frequency (RF) electrodes for ion acceleration. Simulations with particle-in-cell and beam envelope codes predict >10x higher current densities compared to state-of-the-art ion accelerators. This increase results from dividing the total ion beam current up into many beamlets to control space charge forces. Focusing elements can be biased taking advantage of high breakdown electric fields in sub-mm structures formed using MEMS techniques (Micro-Electro-Mechanical Systems). We will present results on ion beam transport and acceleration in MEMS based beamlets. Acknowledgments: This work is supported by the U.S. DOE under Contract No. DE-AC02-05CH11231.

Comparative Study on Graded-Barrier AlxGa1‑xN/AlN/GaN/Si Metal-Oxide-Semiconductor Heterostructure Field-Effect Transistor by Using Ultrasonic Spray Pyrolysis Deposition Technique

NASA Astrophysics Data System (ADS)

Lee, Ching-Sung; Hsu, Wei-Chou; Huang, Yi-Ping; Liu, Han-Yin; Yang, Wen-Luh; Yang, Shen-Tin

2018-06-01

Comparative study on a novel Al2O3-dielectric graded-barrier (GB) AlxGa1‑xN/AlN/GaN/Si (x = 0.22 ∼ 0.3) metal-oxide-semiconductor heterostructure field-effect transistor (MOS-HFET) formed by using the ultrasonic spray pyrolysis deposition (USPD) technique has been made with respect to a conventional-barrier (CB) Al0.26Ga0.74N/AlN/GaN/Si MOS-HFET and the reference Schottky-gate HFET devices. The GB AlxGa1‑xN was devised to improve the interfacial quality and enhance the Schottky barrier height at the same time. A cost-effective ultrasonic spray pyrolysis deposition (USPD) method was used to form the high-k Al2O3 gate dielectric and surface passivation on the AlGaN barrier of the present MOS-HFETs. Comprehensive device performances, including maximum extrinsic transconductance (g m,max), maximum drain-source current density (I DS,max), gate-voltage swing (GVS) linearity, breakdown voltages, subthreshold swing (SS), on/off current ratio (I on /I off ), high frequencies, and power performance are investigated.

Plasma physics and related challenges of millimeter-wave-to-terahertz and high power microwave generationa)

NASA Astrophysics Data System (ADS)

Booske, John H.

2008-05-01

Homeland security and military defense technology considerations have stimulated intense interest in mobile, high power sources of millimeter-wave (mmw) to terahertz (THz) regime electromagnetic radiation, from 0.1 to 10THz. While vacuum electronic sources are a natural choice for high power, the challenges have yet to be completely met for applications including noninvasive sensing of concealed weapons and dangerous agents, high-data-rate communications, high resolution radar, next generation acceleration drivers, and analysis of fluids and condensed matter. The compact size requirements for many of these high frequency sources require miniscule, microfabricated slow wave circuits. This necessitates electron beams with tiny transverse dimensions and potentially very high current densities for adequate gain. Thus, an emerging family of microfabricated, vacuum electronic devices share many of the same plasma physics challenges that are currently confronting "classic" high power microwave (HPM) generators including long-life bright electron beam sources, intense beam transport, parasitic mode excitation, energetic electron interaction with surfaces, and rf air breakdown at output windows. The contemporary plasma physics and other related issues of compact, high power mmw-to-THz sources are compared and contrasted to those of HPM generation, and future research challenges and opportunities are discussed.

Laser-guided, intersecting discharge channels for the final beam transport in heavy-ion fusion

NASA Astrophysics Data System (ADS)

Niemann, C.; Neff, S.; Tauschwitz, A.; Penache, D.; Birkner, R.; Constantin, C.; Knobloch, R.; Presura, R.; Rosmej, F. B.; Hoffmann, D. H. H.; Yu, S. S.

2003-06-01

Ion-beam transport in space charge neutralizing discharge channels has been proposed for the final focus and chamber transport in a heavy-ion fusion reactor. A driver scenario with two-sided target illumination requires a system of two intersecting discharges to transport beams of the same charge from opposite sides towards the fusion target. In this article we report on experiments on the creation of free-standing, intersecting high-current discharge channels. The discharges are initiated in ammonia gas (NH3) in a metallic chamber by two perpendicular CO2-laser beams, which resonantly heat and subsequently rarefy the gas along the laser paths before the breakdown. These low density channels guide the discharges along the predefined paths and also around the 90° angles without any mechanical guiding structures. In this way stable X-, T-, and L-shaped discharges with currents in excess of 40 kA, at pressures of a few mbar were created with a total length of 110 cm. An 11.4 A MeV 58Ni+12 beam from the UNILAC (Universal Linear Accelerator) linear accelerator was used to probe the line-integrated ion-optical properties of the central channel in a T-shaped discharge.

SiC-based Photo-detectors for UV, VUV, EUV and Soft X-ray Detection

NASA Technical Reports Server (NTRS)

Yan, Feng

2006-01-01

A viewgraph presentation describing an ideal Silicon Carbide detector for ultraviolet, vacuum ultraviolet, extreme ultraviolet and soft x-ray detection is shown. The topics include: 1) An ideal photo-detector; 2) Dark current density of SiC photodiodes at room temperature; 3) Dark current in SiC detectors; 4) Resistive and capacitive feedback trans-impedance amplifier; 5) Avalanche gain; 6) Excess noise; 7) SNR in single photon counting mode; 8) Structure of SiC single photon counting APD and testing structure; 9) Single photon counting waveform and testing circuit; 10) Amplitude of SiC single photon counter; 11) Dark count of SiC APD photon counters; 12) Temperature-dependence of dark count rate; 13) Reduce the dark count rate by reducing the breakdown electric field; 14) Spectrum range for SiC detectors; 15) QE curves of Pt/4H-SiC photodiodes; 16) QE curve of SiC; 17) QE curves of SiC photodiode vs. penetration depth; 18) Visible rejection of SiC photodiodes; 19) Advantages of SiC photodiodes; 20) Competitors of SiC detectors; 21) Extraterrestrial solar spectra; 22) Visible-blind EUV detection; 23) Terrestrial solar spectra; and 24) Less than 1KeV soft x-ray detection.

Transport and charging mechanisms in Ta2O5 thin films for capacitive RF MEMS switches application

NASA Astrophysics Data System (ADS)

Persano, A.; Quaranta, F.; Martucci, M. C.; Cretı, P.; Siciliano, P.; Cola, A.

2010-06-01

The potential of sputtered Ta2O5 thin films to be used as dielectric layers in capacitive radio frequency microelectromechanical system switches is evaluated by investigating two factors of crucial importance for the performance of these devices which are the transport mechanisms and the charging effects in the dielectric layer. We find that Ta2O5 films show good electrical and dielectrical properties for the considered application in terms of a low leakage current density of 4 nA/cm2 for E =1 MV/cm, a high breakdown field of 4 MV/cm and a high dielectric constant of 32. For electric fields lower than 1 MV/cm the conduction mechanism is found to be variable-range hopping in the temperature range 300-400 K, while nearest-neighbor hopping is observed at higher temperatures. For fields in the range 1-4 MV/cm Poole-Frenkel becomes the dominant conduction mechanism. Current and capacitance transients used to investigate the charging effects show a decay which is well described by the stretched-exponential law, thus providing further insights on capture and emission processes.

Single-layer MoS2 - electrical transport properties, devices and circuits

NASA Astrophysics Data System (ADS)

Kis, Andras

2013-03-01

After quantum dots, nanotubes and nanowires, two-dimensional materials in the shape of sheets with atomic-scale thickness represent the newest addition to the diverse family of nanoscale materials. Single-layer molybdenum disulphide (MoS2) , a direct-gap semiconductor is a typical example of these new graphene-like materials that can be produced using the adhesive-tape based cleavage technique originally developed for graphene. The presence of a band gap in MoS2 allowed us to fabricate transistors that can be turned off and operate with negligible leakage currents. Furthermore, our transistors can be used to build simple integrated circuits capable of performing logic operations and amplifying small signals. I will report here on our latest 2D MoS2 transistors with improved performance due to enhanced electrostatic control, showing improved currents and transconductance as well as current saturation. We also record electrical breakdown of our devices and find that MoS2 can support very high current densities, exceeding the current carrying capacity of copper by a factor of fifty. Furthermore, I will show optoelectronic devices incorporating MoS2 with sensitivity that surpasses similar graphene devices by several orders of magnitude. Finally, I will present temperature-dependent electrical transport and mobility measurements that show clear mobility enhancement due to the suppression of the influence of charge impurities with the deposition of an HfO2 capping layer. Financially supported by grants from Swiss National Science Foundation, EU-FP7, EU-ERC and Swiss Nanoscience Institute.

Seasonal and distributional patterns of seabirds along the Aleutian Archipelago

USGS Publications Warehouse

Renner, M.; Hunt, G.L.; Piatt, John F.; Byrd, G.V.

2008-01-01

The Aleutian Archipelago is of global importance to seabirds during the northern summer, but little is known about seabird use of these waters during winter. We compare summer and winter abundances of seabirds around 3 islands: Buldir in the western, Kasatochi in the central, and Aiktak in the eastern Aleutians. The density of combined seabird biomass in nearshore marine waters was higher in summer than in winter at Buldir and Kasatochi, but was higher in winter at Aiktak, despite the departure of abundant migratory species. Comparing foraging guilds, we found that only piscivores increased at the western and central sites in winter, whereas at the eastern site several planktivorous species increased as well. The only planktivore remaining in winter at the central and western sites in densities comparable to summer densities was whiskered auklet Aethia pygmaea. Crested auklet Aethia cristatella and thick-billed murre Uria lomvia showed the greatest proportional winter increase at the eastern site. The seasonal patterns of the seabird communities suggest a winter breakdown of the copepod-based food web in the central and western parts of the archipelago, and a system that remains rich in euphausiids in the eastern Aleutians. We suggest that in winter crested auklets take the trophic role that short-tailed shearwaters Puffinus tenuirostris occupy during summer. We hypothesize that advection of euphausiids in the Aleutian North Slope Current is important for supporting the high biomass of planktivores that occupy the Unimak Pass region on a year-round basis. ?? Inter-Research 2008.

VUV absorption spectroscopy measurements of the role of fast neutral atoms in a high-power gap breakdown

DOE Office of Scientific and Technical Information (OSTI.GOV)

Filuk, A. B.; Bailey, J. E.; Cuneo, M. E.

The maximum power achieved in a wide variety of high-power devices, including electron and ion diodes, z pinches, and microwave generators, is presently limited by anode-cathode gap breakdown. A frequently discussed hypothesis for this effect is ionization of fast neutral atoms injected throughout the anode-cathode gap during the power pulse. We describe a newly developed diagnostic tool that provides a direct test of this hypothesis. Time-resolved vacuum-ultraviolet absorption spectroscopy is used to directly probe fast neutral atoms with 1-mm spatial resolution in the 10-mm anode-cathode gap of the SABRE 5 MV, 1 TW applied-B ion diode. Absorption spectra collected duringmore » Ar RF glow discharges and with CO{sub 2} gas fills confirm the reliability of the diagnostic technique. Throughout the 50--100 ns ion diode pulses no measurable neutral absorption was seen, setting upper limits of (0.12--1.5)x10{sup 14}cm{sup -3} for ground-state fast neutral atom densities of H, C, N, O, and F. The absence of molecular absorption bands also sets upper limits of (0.16--1.2)x10{sup 15}cm{sup -3} for common simple molecules. These limits are low enough to rule out ionization of fast neutral atoms as a breakdown mechanism. Breakdown due to ionization of molecules is also found to be unlikely. This technique can now be applied to quantify the role of neutral atoms in other high-power devices.« less

Large energy storage efficiency of the dielectric layer of graphene nanocapacitors.

PubMed

Bezryadin, A; Belkin, A; Ilin, E; Pak, M; Colla, Eugene V; Hubler, A

2017-12-08

Electric capacitors are commonly used in electronic circuits for the short-term storage of small amounts of energy. It is desirable however to use capacitors to store much larger energy amounts to replace rechargeable batteries. Unfortunately existing capacitors cannot store sufficient energy to be able to replace common electrochemical energy storage systems. Here we examine the energy storage capabilities of graphene nanocapacitors, which are tri-layer devices involving an Al film, Al 2 O 3 dielectric layer, and a single layer of carbon atoms, i.e., graphene. This is a purely electronic capacitor and therefore it can function in a wide temperature interval. The capacitor shows a high dielectric breakdown electric field strength, of the order of 1000 kV mm -1 (i.e., 1 GV m -1 ), which is much larger than the table value of the Al 2 O 3 dielectric strength. The corresponding energy density is 10-100 times larger than the energy density of a common electrolytic capacitor. Moreover, we discover that the amount of charge stored in the dielectric layer can be equal or can even exceed the amount of charge stored on the capacitor plates. The dielectric discharge current follows a power-law time dependence. We suggest a model to explain this behavior.

Large energy storage efficiency of the dielectric layer of graphene nanocapacitors

NASA Astrophysics Data System (ADS)

Bezryadin, A.; Belkin, A.; Ilin, E.; Pak, M.; Colla, Eugene V.; Hubler, A.

2017-12-01

Electric capacitors are commonly used in electronic circuits for the short-term storage of small amounts of energy. It is desirable however to use capacitors to store much larger energy amounts to replace rechargeable batteries. Unfortunately existing capacitors cannot store sufficient energy to be able to replace common electrochemical energy storage systems. Here we examine the energy storage capabilities of graphene nanocapacitors, which are tri-layer devices involving an Al film, Al2O3 dielectric layer, and a single layer of carbon atoms, i.e., graphene. This is a purely electronic capacitor and therefore it can function in a wide temperature interval. The capacitor shows a high dielectric breakdown electric field strength, of the order of 1000 kV mm-1 (i.e., 1 GV m-1), which is much larger than the table value of the Al2O3 dielectric strength. The corresponding energy density is 10-100 times larger than the energy density of a common electrolytic capacitor. Moreover, we discover that the amount of charge stored in the dielectric layer can be equal or can even exceed the amount of charge stored on the capacitor plates. The dielectric discharge current follows a power-law time dependence. We suggest a model to explain this behavior.

Polymer Nanocomposites As Future Materials For Defense & Energy Applications-High Energy Density Storage Systems With Reduced Size And Weight For Pulse Power Applications

DTIC Science & Technology

2011-11-21

Std Z39-18 Sol-Gel CCTO /P(VDF-HFP) Composites with High Energy Density During the previous reporting period we found that CCTO (CaCu3Ti4O12...composites containing CCTO synthesized by the standard solid-state route. At the optimal 20 vol% CCTO loading, our CCTO -P(VDF-HFP) composite has εr ~82 at...Ceramics such as BaTiO3 or CaCu3Ti4O12 ( CCTO ) have high dielectric permittivities, but they suffer from very low breakdown field strength and thus low

Nested-cone transformer antenna

DOEpatents

Ekdahl, C.A.

1991-05-28

A plurality of conical transmission lines are concentrically nested to form an output antenna for pulsed-power, radio-frequency, and microwave sources. The diverging conical conductors enable a high power input density across a bulk dielectric to be reduced below a breakdown power density at the antenna interface with the transmitting medium. The plurality of cones maintain a spacing between conductors which minimizes the generation of high order modes between the conductors. Further, the power input feeds are isolated at the input while enabling the output electromagnetic waves to add at the transmission interface. Thus, very large power signals from a pulse rf, or microwave source can be radiated. 6 figures.

Nested-cone transformer antenna

DOEpatents

Ekdahl, Carl A.

1991-01-01

A plurality of conical transmission lines are concentrically nested to form n output antenna for pulsed-power, radio-frequency, and microwave sources. The diverging conical conductors enable a high power input density across a bulk dielectric to be reduced below a breakdown power density at the antenna interface with the transmitting medium. The plurality of cones maintain a spacing between conductors which minimizes the generation of high order modes between the conductors. Further, the power input feeds are isolated at the input while enabling the output electromagnetic waves to add at the transmission interface. Thus, very large power signals from a pulse rf, or microwave source can be radiated.

High performance capacitors using nano-structure multilayer materials fabrication

DOEpatents

Barbee, Jr., Troy W.; Johnson, Gary W.; O'Brien, Dennis W.

1995-01-01

A high performance capacitor fabricated from nano-structure multilayer materials, such as by controlled, reactive sputtering, and having very high energy-density, high specific energy and high voltage breakdown. The multilayer capacitors, for example, may be fabricated in a "notepad" configuration composed of 200-300 alternating layers of conductive and dielectric materials so as to have a thickness of 1 mm, width of 200 mm, and length of 300 mm, with terminals at each end of the layers suitable for brazing, thereby guaranteeing low contact resistance and high durability. The "notepad" capacitors may be stacked in single or multiple rows (series-parallel banks) to increase the voltage and energy density.

High performance capacitors using nano-structure multilayer materials fabrication

DOEpatents

Barbee, Jr., Troy W.; Johnson, Gary W.; O'Brien, Dennis W.

1996-01-01

A high performance capacitor fabricated from nano-structure multilayer materials, such as by controlled, reactive sputtering, and having very high energy-density, high specific energy and high voltage breakdown. The multilayer capacitors, for example, may be fabricated in a "notepad" configuration composed of 200-300 alternating layers of conductive and dielectric materials so as to have a thickness of 1 mm, width of 200 mm, and length of 300 mm, with terminals at each end of the layers suitable for brazing, thereby guaranteeing low contact resistance and high durability. The "notepad" capacitors may be stacked in single or multiple rows (series-parallel banks) to increase the voltage and energy density.

Experimental investigation of effective parameters on signal enhancement in spark assisted laser induced breakdown spectroscopy

NASA Astrophysics Data System (ADS)

Hassanimatin, M. M.; Tavassoli, S. H.

2018-05-01

A combination of electrical spark and laser induced breakdown spectroscopy (LIBS), which is called spark assisted LIBS (SA-LIBS), has shown its capability in plasma spectral emission enhancement. The aim of this paper is a detailed study of plasma emission to determine the effect of plasma and experimental parameters on increasing the spectral signal. An enhancement ratio of SA-LIBS spectral lines compared with LIBS is theoretically introduced. The parameters affecting the spectral enhancement ratio including ablated mass, plasma temperature, the lifetime of neutral and ionic spectral lines, plasma volume, and electron density are experimentally investigated and discussed. By substitution of the effective parameters, the theoretical spectral enhancement ratio is calculated and compared with the experimental one. Two samples of granite as a dielectric and aluminum as a metal at different laser pulse energies are studied. There is a good agreement between the calculated and the experimental enhancement ratio.

Possible origin and roles of nano-porosity in ZrO2 scales for hydrogen pick-up in Zr alloys

NASA Astrophysics Data System (ADS)

Lindgren, Mikaela; Geers, Christine; Panas, Itai

2017-08-01

A mechanistic understanding of Wagnerian build-up and subsequent non-Wagnerian break-down of barrier oxide upon oxidation of zirconium alloys by water is reiterated. Hydrogen assisted build-up of nano-porosity is addressed. Growth of sub-nanometer wide stalactitic pores owing to increasing aggregation of neutral oxygen vacancies offering a means to permeate hydrogen into the alloy is explored by density functional theory. The Wagnerian channel utilizes charge separation allowing charged oxygen vacancies and electrons to move separately from nominal anode to nominal cathode. This process becomes increasingly controlled by the charging of the barrier oxide resulting in sub-parabolic rate law for oxide growth. The break-down of the barrier oxide is understood to be preceded by avalanching hydrogen pick-up in the alloy. Pore mediated diffusion allows water to effectively short circuit the barrier oxide.

Standard Reference Line Combined with One-Point Calibration-Free Laser-Induced Breakdown Spectroscopy (CF-LIBS) to Quantitatively Analyze Stainless and Heat Resistant Steel.

PubMed

Fu, Hongbo; Wang, Huadong; Jia, Junwei; Ni, Zhibo; Dong, Fengzhong

2018-01-01

Due to the influence of major elements' self-absorption, scarce observable spectral lines of trace elements, and relative efficiency correction of experimental system, accurate quantitative analysis with calibration-free laser-induced breakdown spectroscopy (CF-LIBS) is in fact not easy. In order to overcome these difficulties, standard reference line (SRL) combined with one-point calibration (OPC) is used to analyze six elements in three stainless-steel and five heat-resistant steel samples. The Stark broadening and Saha - Boltzmann plot of Fe are used to calculate the electron density and the plasma temperature, respectively. In the present work, we tested the original SRL method, the SRL with the OPC method, and intercept with the OPC method. The final calculation results show that the latter two methods can effectively improve the overall accuracy of quantitative analysis and the detection limits of trace elements.

Nanopore fabricated in pyramidal HfO2 film by dielectric breakdown method

NASA Astrophysics Data System (ADS)

Wang, Yifan; Chen, Qi; Deng, Tao; Liu, Zewen

2017-10-01

The dielectric breakdown method provides an innovative solution to fabricate solid-state nanopores on insulating films. A nanopore generation event via this method is considered to be caused by random charged traps (i.e., structural defects) and high electric fields in the membrane. Thus, the position and number of nanopores on planar films prepared by the dielectric breakdown method is hard to control. In this paper, we propose to fabricate nanopores on pyramidal HfO2 films (10-nm and 15-nm-thick) to improve the ability to control the location and number during the fabrication process. Since the electric field intensity gets enhanced at the corners of the pyramid-shaped film, the probability of nanopore occurrence at vertex and edge areas increases. This priority of appearance provides us chance to control the location and number of nanopores by monitoring a sudden irreversible discrete increase in current. The experimental results showed that the probability of nanopore occurrence decreases in an order from the vertex area, the edge area to the side face area. The sizes of nanopores ranging from 30 nm to 10 nm were obtained. Nanopores fabricated on the pyramid-shaped HfO2 film also showed an obvious ion current rectification characteristic, which might improve the nanopore performance as a biomolecule sequencing platform.

Galactoseismology and the local density of dark matter

DOE PAGES

Banik, Nilanjan; Widrow, Lawrence M.; Dodelson, Scott

2016-10-08

Here, we model vertical breathing mode perturbations in the Milky Way's stellar disc and study their effects on estimates of the local dark matter density, surface density, and vertical force. Evidence for these perturbations, which involve compression and expansion of the Galactic disc perpendicular to its midplane, come from the SEGUE, RAVE, and LAMOST surveys. We show that their existence may lead to systematic errors ofmore » $$10\\%$$ or greater in the vertical force $$K_z(z)$$ at $$|z|=1.1\\,{\\rm kpc}$$. These errors translate to $$\\gtrsim 25\\%$$ errors in estimates of the local dark matter density. Using different mono-abundant subpopulations as tracers offers a way out: if the inferences from all tracers in the Gaia era agree, then the dark matter determination will be robust. Disagreement in the inferences from different tracers will signal the breakdown of the unperturbed model and perhaps provide the means for determining the nature of the perturbation.« less

Is there a relation between local bone quality as assessed on panoramic radiographs and alveolar bone level?

PubMed

Nackaerts, Olivia; Gijbels, Frieda; Sanna, Anna-Maria; Jacobs, Reinhilde

2008-03-01

The aim was to explore the relation between radiographic bone quality on panoramic radiographs and relative alveolar bone level. Digital panoramic radiographs of 94 female patients were analysed (mean age, 44.5; range, 35-74). Radiographic density of the alveolar bone in the premolar region was determined using Agfa Musica software. Alveolar bone level and bone quality index (BQI) were also assessed. Relationships between bone density and BQI on one hand and the relative loss of alveolar bone level on the other were assessed. Mandibular bone density and loss of alveolar bone level were weakly but significantly negatively correlated for the lower premolar area (r = -.27). The BQI did not show a statistically significant relation to alveolar bone level. Radiographic mandibular bone density on panoramic radiographs shows a weak but significant relation to alveolar bone level, with more periodontal breakdown for less dense alveolar bone.

The growth and breakdown of a vortex-pair in a stably stratified fluid

NASA Astrophysics Data System (ADS)

Advaith, S.; Tinaikar, Aashay; Manu, K. V.; Basu, Saptarshi

2017-11-01

Vortex interaction with density stratification is ubiquitous in nature and applied to various engineering applications. Present study have characterized the spatial and temporal dynamics of the interaction between a vortex and a density stratified interface. The present work is prompted by our research on single tank Thermal Energy Storage (TES) system used in concentrated solar power (CSP) plants where hot and cold fluids are separated by means of density stratification. Rigorous qualitative (High speed Shadowgraph) and quantitative (high speed PIV) studies enable us to have great understanding about vortex formation, propagation, interaction dynamics with density stratified interface, resulted plume characteristics and so on. We have categorized this interaction phenomena in to three different cases based on its nature as non-penetrative, partial penetrative and extensively penetrative. Along with that we have proposed a regime map consisting non-dimensional parameters like Reynolds, Richardson and Atwood numbers which predicts the occurrence above mentioned cases.

Breakdown Voltage of Thermoplastics with Clay Nanometer-Sized Fillers (Postprint)

DTIC Science & Technology

2008-12-01

of clay nanofillers. Low density polyethylene ( LDPE ) is a mechanically tough, inexpensive polymer used heavily in industry. Numerous studies have...A blend of LDPE grafted with maleic anhydride ( LDPE -g- MA) is tested in this work for improved electrical properties with clay addition. The...LLDPE) copolymer with octene. LLDPE improves over regular LDPE in a number of mechanical properties, though it has a higher production cost. A

Cellulose triacetate, thin film dielectric capacitor

NASA Technical Reports Server (NTRS)

Yen, Shiao-Ping S. (Inventor); Jow, T. Richard (Inventor)

1995-01-01

Very thin films of cellulose triacetate are cast from a solution containing a small amount of high boiling temperature, non-solvent which evaporates last and lifts the film from the casting surface. Stretched, oriented, crystallized films have high electrical breakdown properties. Metallized films less than about 2 microns in thickness form self-healing electrodes for high energy density, pulsed power capacitors. Thicker films can be utilized as a dielectric for a capacitor.

Cellulose triacetate, thin film dielectric capacitor

NASA Technical Reports Server (NTRS)

Yen, Shiao-Ping S. (Inventor); Jow, T. Richard (Inventor)

1993-01-01

Very thin films of cellulose triacetate are cast from a solution containing a small amount of high boiling temperature, non-solvent which evaporates last and lifts the film from the casting surface. Stretched, oriented, crystallized films have high electrical breakdown properties. Metallized films less than about 2 microns in thickness form self-healing electrodes for high energy density, pulsed power capacitors. Thicker films can be utilized as a dielectric for a capacitor.

Bio-Inspired Fluoro-polydopamine Meets Barium Titanate Nanowires: A Perfect Combination to Enhance Energy Storage Capability of Polymer Nanocomposites.

PubMed

Wang, Guanyao; Huang, Xingyi; Jiang, Pingkai

2017-03-01

Rapid evolution of energy storage devices expedites the development of high-energy-density materials with excellent flexibility and easy processing. The search for such materials has triggered the development of high-dielectric-constant (high-k) polymer nanocomposites. However, the enhancement of k usually suffers from sharp reduction of breakdown strength, which is detrimental to substantial increase of energy storage capability. Herein, the combination of bio-inspired fluoro-polydopamine functionalized BaTiO 3 nanowires (NWs) and a fluoropolymer matrix offers a new thought to prepare polymer nanocomposites. The elaborate functionalization of BaTiO 3 NWs with fluoro-polydopamine has guaranteed both the increase of k and the maintenance of breakdown strength, resulting in significantly enhanced energy storage capability. The nanocomposite with 5 vol % functionalized BaTiO 3 NWs discharges an ultrahigh energy density of 12.87 J cm -3 at a relatively low electric field of 480 MV m -1 , more than three and a half times that of biaxial-oriented polypropylene (BOPP, 3.56 J cm -3 at 600 MV m -1 ). This superior energy storage capability seems to rival or exceed some reported advanced nanoceramics-based materials at 500 MV m -1 . This new strategy permits insights into the construction of polymer nanocomposites with high energy storage capability.

Influence of irradiation conditions on plasma evolution in laser-surface interaction

NASA Astrophysics Data System (ADS)

Hermann, J.; Boulmer-Leborgne, C.; Dubreuil, B.; Mihailescu, I. N.

1993-09-01

The plasma plume induced by pulsed CO2 laser irradiation of a Ti target at power densities up to 4×108 W cm-2 was studied by emission spectroscopy. Time- and space-resolved measurements were performed by varying laser intensity, laser temporal pulse shape, ambient gas pressure, and the nature of the ambient gas. Experimental results are discussed by comparison with usual models. We show that shock wave and plasma propagation depend critically on the ratio Ivap/Ii, Ivap being the intensity threshold for surface vaporization and Ii the plasma ignition threshold of the ambient gas. Spectroscopic diagnostics of the helium breakdown plasma show maximum values of electron temperature and electron density in the order of kTe˜10 eV and ne=1018 cm-3, respectively. The plasma cannot be described by local thermodynamic equilibrium modeling. Nevertheless, excited metal atoms appear to be in equilibrium with electrons, hence, they can be used like a probe to measure the electron temperature. In order to get information on the role of the plasma in the laser-surface interaction, Ti surfaces were investigated by microscopy after irradiation. Thus an enhanced momentum transfer from the plasma to the target due to the recoil pressure of the breakdown plasma could be evidenced.

Enhancement of Dielectric Breakdown Strength and Energy Conversion Efficiency of Niobate Glass-Ceramics by Sc2O3 Doping

NASA Astrophysics Data System (ADS)

Xiao, Shi; Xiu, Shaomei; Yang, Ke; Shen, Bo; Zhai, Jiwei

2018-01-01

Niobate glass-ceramics K2O-SrO-Nb2O5-B2O3-Al2O3-SiO2 (KSN-BAS) doped with different amounts of Sc2O3 have been prepared through a melt quenching/controlled crystallization method, and the influence of the Sc2O3 content on their phase composition, microstructure, dielectric performance, and charge-discharge properties investigated. X-ray powder diffraction results showed that the peak positions of the KSr2Nb5O15 phase shifted to higher angle and the glass-ceramic microstructures were significantly improved by Sc2O3 addition. Based on these results, 0.5 mol.% Sc2O3 doping was found to achieve remarkable enhancement in energy storage density, which reached 9.63 ± 0.39 J/cm3 at dielectric breakdown strength of 1450.38 ± 29.01 kV/cm with high conversion efficiency of ˜ 92.1%. For pulsed power applications, discharge speed of 17 ns and power density of 0.48 MW/cm3 were obtained in the glass-ceramic with 0.5 mol.% Sc2O3. These results could provide a new design strategy for high-performance dielectric capacitors.

Triggering Mechanism for Neutron Induced Single-Event Burnout in Power Devices

NASA Astrophysics Data System (ADS)

Shoji, Tomoyuki; Nishida, Shuichi; Hamada, Kimimori

2013-04-01

Cosmic ray neutrons can trigger catastrophic failures in power devices. It has been reported that parasitic transistor action causes single-event burnout (SEB) in power metal-oxide-semiconductor field-effect transistors (MOSFETs) and insulated gate bipolar transistors (IGBTs). However, power diodes do not have an inherent parasitic transistor. In this paper, we describe the mechanism triggering SEB in power diodes for the first time using transient device simulation. Initially, generated electron-hole pairs created by incident recoil ions generate transient current, which increases the electron density in the vicinity of the n-/n+ boundary. The space charge effect of the carriers leads to an increase in the strength of the electric field at the n-/n+ boundary. Finally, the onset of impact ionization at the n-/n+ boundary can trigger SEB. Furthermore, this failure is closely related to diode secondary breakdown. It was clarified that the impact ionization at the n-/n+ boundary is a key point of the mechanism triggering SEB in power devices.

Corrosion behavior of ion implanted nickel-titanium orthodontic wire in fluoride mouth rinse solutions.

PubMed

Iijima, Masahiro; Yuasa, Toshihiro; Endo, Kazuhiko; Muguruma, Takeshi; Ohno, Hiroki; Mizoguchi, Itaru

2010-01-01

This study investigated the corrosion properties of ion implanted nickel-titanium wire (Neo Sentalloy Ionguard) in artificial saliva and fluoride mouth rinse solutions (Butler F Mouthrinse, Ora-Bliss). Non ion implanted nickel-titanium wire (Neo Sentalloy) was used as control. The anodic corrosion behavior was examined by potentiodynamic polarization measurement. The surfaces of the specimens were examined with SEM. The elemental depth profiles were characterized by XPS. Neo Sentalloy Ionguard in artificial saliva and Butler F Mouthrinse (500 ppm) had a lower current density than Neo Sentalloy. In addition, breakdown potential of Neo Sentalloy Ionguard in Ora-Bliss (900 ppm) was much higher than that of Neo Sentalloy although both wires had similar corrosion potential in Ora-Bliss (450 and 900 ppm). The XPS results for Neo Sentalloy Ionguard suggested that the layers consisted of TiO(2) and TiN were present on the surface and the layers may improve the corrosion properties.

Nanohardness, corrosion and protein adsorption properties of CuAlO2 films deposited on 316L stainless steel for biomedical applications

NASA Astrophysics Data System (ADS)

Chang, Shih-Hang; Chen, Jian-Zhang; Hsiao, Sou-Hui; Lin, Guan-Wei

2014-01-01

This study preliminarily assesses the biomedical applications of CuAlO2 coatings according to nanoindentation, electrochemical, and protein adsorption tests. Nanoindentation results revealed that the surface hardness of 316L stainless steel increased markedly after coating with CuAlO2 films. Electrochemical tests of corrosion potential, breakdown potential, and corrosion current density showed that the corrosion resistance properties of 316L stainless steel are considerably improved by CuAlO2 coatings. Bicinchoninic acid (BCA) protein assay results revealed that the protein adsorption behavior of 316L stainless steel did not exhibit notable differences with or without CuAlO2 coatings. A CuAlO2 coating of 100 nm thickness improved the surface nanohardness and corrosion resistance ability of 316L stainless steel. CuAlO2 is a potential candidate for biomaterial coating applications, particularly for surface modification of fine, delicate implants.

Mechanism of fat taste perception: Association with diet and obesity.

PubMed

Liu, Dongli; Archer, Nicholas; Duesing, Konsta; Hannan, Garry; Keast, Russell

2016-07-01

Energy homeostasis plays a significant role in food consumption and body weight regulation with fat intake being an area of particular interest due to its palatability and high energy density. Increasing evidence from humans and animal studies indicate the existence of a taste modality responsive to fat via its breakdown product fatty acids. These studies implicate multiple candidate receptors and ion channels for fatty acid taste detection, indicating a complex peripheral physiology that is currently not well understood. Additionally, a limited number of studies suggest a reduced ability to detect fatty acids is associated with obesity and a diet high in fat reduces an individual's ability to detect fatty acids. To support this, genetic variants within candidate fatty acid receptors are also associated with obesity reduced ability to detect fatty acids. Understanding oral peripheral fatty acid transduction mechanisms and the association with fat consumption may provide the basis of novel approaches to control development of obesity. Copyright © 2016 The Authors. Published by Elsevier Ltd.. All rights reserved.

Advanced Capacitor with SiC for High Temperature Applications

NASA Astrophysics Data System (ADS)

Tsao, B. H.; Ramalingam, M. L.; Bhattacharya, R. S.; Carr, Sandra Fries

1994-07-01

An advanced capacitor using SiC as the dielectric material has been developed for high temperature, high power, and high density electronic components for aircraft and aerospace application. The conventional capacitor consists of a large number of metallized polysulfone films that are arranged in parallel and enclosed in a sealed metal case. However, problems with electrical failure, thermal failure, and dielectric flow were experienced by Air Force suppliers for the component and subsystem for lack of suitable properties of the dielectric material. The high breakdown electrical field, high thermal conductivity, and high temperature operational resistance of SiC compared to similar properties of the conventional ceramic and polymer capacitor would make it a better choice for a high temperature, and high power capacitor. The quality of the SiC film was evaluated. The electrical parameters, such as the capacitance, dissipation factor, equivalent series resistance, and dielectric withstand voltage, were evaluated. The prototypical capacitors are currently being fabricated using SiC film.

Ferroelectric PLZT thick films grown by poly(1-vinylpyrrolidone-co-vinyl acetate) (PVP/VA)-modified sol-gel process

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hu, Zhongqiang; Ma, Beihai; Li, Meiya

2016-03-01

We report the growth of ferroelectric Pb0.92La0.08Zr0.52Ti0.48O3 (PLZT) thick films using a poly(1-vinylpyrrolidone-co-vinyl acetate) (PVP/VA)-modified sol–gel process. A per-coating thickness of ≈0.66 μm has been demonstrated using PVP/VA-modified solution, which is more than doubled that of the PLZT films grown by PVP-modified method, and nearly 6 times the per-coating thickness of films prepared by conventional sol–gel process. PLZT thick films grown on LNO/Ni substrates exhibited denser microstructure, higher remanent polarization (11 μC/cm 2) and dielectric tunability (45%), lower leakage current density (≈1.2 × 10 -8 A/cm 2), and higher breakdown strength (≈1.6 MV/cm) than those for the samples grown onmore » PtSi substrates. These results demonstrated great potential of using PVP/VA-modified sol–gel process for high power film capacitor applications.« less

EC assisted start-up experiments reproduction in FTU and AUG for simulations of the ITER case

DOE Office of Scientific and Technical Information (OSTI.GOV)

Granucci, G.; Ricci, D.; Farina, D.

The breakdown and plasma start-up in ITER are well known issues studied in the last few years in many tokamaks with the aid of calculation based on simplified modeling. The thickness of ITER metallic wall and the voltage limits of the Central Solenoid Power Supply strongly limit the maximum toroidal electric field achievable (0.3 V/m), well below the level used in the present generation of tokamaks. In order to have a safe and robust breakdown, the use of Electron Cyclotron Power to assist plasma formation and current rump up has been foreseen. This has raised attention on plasma formation phasemore » in presence of EC wave, especially in order to predict the required power for a robust breakdown in ITER. Few detailed theory studies have been performed up to nowadays, due to the complexity of the problems. A simplified approach, extended from that proposed in ref[1] has been developed including a impurity multispecies distribution and an EC wave propagation and absorption based on GRAY code. This integrated model (BK0D) has been benchmarked on ohmic and EC assisted experiments on FTU and AUG, finding the key aspects for a good reproduction of data. On the basis of this, the simulation has been devoted to understand the best configuration for ITER case. The dependency of impurity distribution content and neutral gas pressure limits has been considered. As results of the analysis a reasonable amount of power (1 - 2 MW) seems to be enough to extend in a significant way the breakdown and current start up capability of ITER. The work reports the FTU data reproduction and the ITER case simulations.« less

Measurement and Analysis of Atomic Hydrogen and Diatomic Molecular AlO, C2, CN, and TiO Spectra Following Laser-induced Optical Breakdown

PubMed Central

Parigger, Christian G.; Woods, Alexander C.; Witte, Michael J.; Swafford, Lauren D.; Surmick, David M.

2014-01-01

In this work, we present time-resolved measurements of atomic and diatomic spectra following laser-induced optical breakdown. A typical LIBS arrangement is used. Here we operate a Nd:YAG laser at a frequency of 10 Hz at the fundamental wavelength of 1,064 nm. The 14 nsec pulses with anenergy of 190 mJ/pulse are focused to a 50 µm spot size to generate a plasma from optical breakdown or laser ablation in air. The microplasma is imaged onto the entrance slit of a 0.6 m spectrometer, and spectra are recorded using an 1,800 grooves/mm grating an intensified linear diode array and optical multichannel analyzer (OMA) or an ICCD. Of interest are Stark-broadened atomic lines of the hydrogen Balmer series to infer electron density. We also elaborate on temperature measurements from diatomic emission spectra of aluminum monoxide (AlO), carbon (C2), cyanogen (CN), and titanium monoxide (TiO). The experimental procedures include wavelength and sensitivity calibrations. Analysis of the recorded molecular spectra is accomplished by the fitting of data with tabulated line strengths. Furthermore, Monte-Carlo type simulations are performed to estimate the error margins. Time-resolved measurements are essential for the transient plasma commonly encountered in LIBS. PMID:24561875

The effects of different bending techniques on corrosion resistance and nickel release of superelastic orthodontic NiTi archwires

NASA Astrophysics Data System (ADS)

Rujeerapaiboon, N.; Anuwongnukroh, N.; Dechkunakorn, S.; Jariyaboon, M.

2017-04-01

Bending superelastic NiTi archwire is indicated in some stages of orthodontic treatment. The difference in bending techniques may affect corrosion resistance and nickel release. The purpose of this study was to investigate the corrosion resistance and nickel release after different bending techniques of NiTi archwires. Preform-curved NiTi archwires were used as a template for bending and used as a control group. 0.016×0.022 inches superelastic NiTi archwires were bent to curve-shape by cold bending, DERHT bending and cold bending then DERHT technique. Potentiodynamic polarization technique was used to measure corrosion behavior of the wires. Corrosion potential (ECORR), corrosion density (ICORR), and breakdown potential of each wire were determined. In addition, the amount of nickel release in the solution after the test was inductively coupled plasma mass spectrometry (ICP-MS). Although, the results showed that ECORR and ICORR were not statistically significantly different among all groups, the difference in breakdown potential and nickel release were observed. Similar corrosion resistance and nickel release were presented in the preform-curved NiTi archwires, cold bending, and cold bending then DERHT group. The DERHT bending group showed the lowest breakdown potential and highest nickel release.

Measurement and analysis of atomic hydrogen and diatomic molecular AlO, C2, CN, and TiO spectra following laser-induced optical breakdown.

PubMed

Parigger, Christian G; Woods, Alexander C; Witte, Michael J; Swafford, Lauren D; Surmick, David M

2014-02-14

In this work, we present time-resolved measurements of atomic and diatomic spectra following laser-induced optical breakdown. A typical LIBS arrangement is used. Here we operate a Nd:YAG laser at a frequency of 10 Hz at the fundamental wavelength of 1,064 nm. The 14 nsec pulses with anenergy of 190 mJ/pulse are focused to a 50 µm spot size to generate a plasma from optical breakdown or laser ablation in air. The microplasma is imaged onto the entrance slit of a 0.6 m spectrometer, and spectra are recorded using an 1,800 grooves/mm grating an intensified linear diode array and optical multichannel analyzer (OMA) or an ICCD. Of interest are Stark-broadened atomic lines of the hydrogen Balmer series to infer electron density. We also elaborate on temperature measurements from diatomic emission spectra of aluminum monoxide (AlO), carbon (C2), cyanogen (CN), and titanium monoxide (TiO). The experimental procedures include wavelength and sensitivity calibrations. Analysis of the recorded molecular spectra is accomplished by the fitting of data with tabulated line strengths. Furthermore, Monte-Carlo type simulations are performed to estimate the error margins. Time-resolved measurements are essential for the transient plasma commonly encountered in LIBS.