Analysis and design of ion-implanted bubble memory devices

NASA Astrophysics Data System (ADS)

Wullert, J. R., II; Kryder, M. H.

1987-04-01

4-μm period ion-implanted contiguous disk bubble memory circuits, designed and fabricated at AT&T Bell Laboratories, Murray Hill, NJ, have been investigated. Quasistatic testing has provided information about both the operational bias field ranges and the exact failure modes. A variety of major loop layouts were investigated and two turns found to severely limit bias field margins are discussed. The generation process, using a hairpin nucleator, was tested and several interesting failure modes were uncovered. Propagation on four different minor loop paths was observed and each was found to have characteristic failure modes. The transfer processes, both into and out of the minor loops, were investigated at higher frequencies to avoid local heating due to long transfer pulses at low frequencies. Again specific failure modes were identified. Overall bias margins for the chip were 9% at 50 Oe drive field and were limited by transfer-in.

Packaging of a large capacity magnetic bubble domain spacecraft recorder

NASA Technical Reports Server (NTRS)

Becker, F. J.; Stermer, R. L.

1977-01-01

A Solid State Spacecraft Data Recorder (SSDR), based on bubble domain technology, having a storage capacity of 10 to the 8th power bits, was designed and is being tested. The recorder consists of two memory modules each having 32 cells, each cell containing sixteen 100 kilobit serial bubble memory chips. The memory modules are interconnected to a Drive and Control Unit (DCU) module containing four microprocessors, 500 integrated circuits, a RAM core memory and two PROM's. The two memory modules and DCU are housed in individual machined aluminum frames, are stacked in brick fashion and through bolted to a base plate assembly which also houses the power supply.

Eternal inflation, bubble collisions, and the persistence of memory

NASA Astrophysics Data System (ADS)

Garriga, Jaume; Guth, Alan H.; Vilenkin, Alexander

2007-12-01

A “bubble universe” nucleating in an eternally inflating false vacuum will experience, in the course of its expansion, collisions with an infinite number of other bubbles. In an idealized model, we calculate the rate of collisions around an observer inside a given reference bubble. We show that the collision rate violates both the homogeneity and the isotropy of the bubble universe. Each bubble has a center which can be related to “the beginning of inflation” in the parent false vacuum, and any observer not at the center will see an anisotropic bubble collision rate that peaks in the outward direction. Surprisingly, this memory of the onset of inflation persists no matter how much time elapses before the nucleation of the reference bubble.

Fabrication of magnetic bubble memory overlay

NASA Technical Reports Server (NTRS)

1973-01-01

Self-contained magnetic bubble memory overlay is fabricated by process that employs epitaxial deposition to form multi-layered complex of magnetically active components on single chip. Overlay fabrication comprises three metal deposition steps followed by subtractive etch.

The 10 to the 8th power bit solid state spacecraft data recorder. [utilizing bubble domain memory technology

NASA Technical Reports Server (NTRS)

Murray, G. W.; Bohning, O. D.; Kinoshita, R. Y.; Becker, F. J.

1979-01-01

The results are summarized of a program to demonstrate the feasibility of Bubble Domain Memory Technology as a mass memory medium for spacecraft applications. The design, fabrication and test of a partially populated 10 to the 8th power Bit Data Recorder using 100 Kbit serial bubble memory chips is described. Design tradeoffs, design approach and performance are discussed. This effort resulted in a 10 to the 8th power bit recorder with a volume of 858.6 cu in and a weight of 47.2 pounds. The recorder is plug reconfigurable, having the capability of operating as one, two or four independent serial channel recorders or as a single sixteen bit byte parallel input recorder. Data rates up to 1.2 Mb/s in a serial mode and 2.4 Mb/s in a parallel mode may be supported. Fabrication and test of the recorder demonstrated the basic feasibility of Bubble Domain Memory technology for such applications. Test results indicate the need for improvement in memory element operating temperature range and detector performance.

Migration of interfacial oxygen ions modulated resistive switching in oxide-based memory devices

NASA Astrophysics Data System (ADS)

Chen, C.; Gao, S.; Zeng, F.; Tang, G. S.; Li, S. Z.; Song, C.; Fu, H. D.; Pan, F.

2013-07-01

Oxides-based resistive switching memory induced by oxygen ions migration is attractive for future nonvolatile memories. Numerous works had focused their attentions on the sandwiched oxide materials for depressing the characteristic variations, but the comprehensive studies of the dependence of electrodes on the migration behavior of oxygen ions are overshadowed. Here, we investigated the interaction of various metals (Ni, Co, Al, Ti, Zr, and Hf) with oxygen atoms at the metal/Ta2O5 interface under electric stress and explored the effect of top electrode on the characteristic variations of Ta2O5-based memory device. It is demonstrated that chemically inert electrodes (Ni and Co) lead to the scattering switching characteristics and destructive gas bubbles, while the highly chemically active metals (Hf and Zr) formed a thick and dense interfacial intermediate oxide layer at the metal/Ta2O5 interface, which also degraded the resistive switching behavior. The relatively chemically active metals (Al and Ti) can absorb oxygen ions from the Ta2O5 film and avoid forming the problematic interfacial layer, which is benefit to the formation of oxygen vacancies composed conduction filaments in Ta2O5 film thus exhibit the minimum variations of switching characteristics. The clarification of oxygen ions migration behavior at the interface can lead further optimization of resistive switching performance in Ta2O5-based memory device and guide the rule of electrode selection for other oxide-based resistive switching memories.

Investigation of chemical vapor deposition of garnet films for bubble domain memories

NASA Technical Reports Server (NTRS)

Besser, P. J.; Hamilton, T. N.

1973-01-01

The important process parameters and control required to grow reproducible device quality ferrimagnetic films by chemical vapor deposition (CVD) were studied. The investigation of the critical parameters in the CVD growth process led to the conclusion that the required reproducibility of film properties cannot be achieved with individually controlled separate metal halide sources. Therefore, the CVD growth effort was directed toward replacement of the halide sources with metallic sources with the ultimate goal being the reproducible growth of complex garnet compositions utilizing a single metal alloy source. The characterization of the YGdGaIG films showed that certain characteristics of this material, primarily the low domain wall energy and the large temperature sensitivity, severely limited its potential as a useful material for bubble domain devices. Consequently, at the time of the change from halide to metallic sources, the target film compositions were shifted to more useful materials such as YGdTmGaIG, YEuGaIG and YSmGaIG.

Three-dimensional magnetic bubble memory system

NASA Technical Reports Server (NTRS)

Stadler, Henry L. (Inventor); Katti, Romney R. (Inventor); Wu, Jiin-Chuan (Inventor)

1994-01-01

A compact memory uses magnetic bubble technology for providing data storage. A three-dimensional arrangement, in the form of stacks of magnetic bubble layers, is used to achieve high volumetric storage density. Output tracks are used within each layer to allow data to be accessed uniquely and unambiguously. Storage can be achieved using either current access or field access magnetic bubble technology. Optical sensing via the Faraday effect is used to detect data. Optical sensing facilitates the accessing of data from within the three-dimensional package and lends itself to parallel operation for supporting high data rates and vector and parallel processing.

Conceptual design of a 10 to the 8th power bit magnetic bubble domain mass storage unit and fabrication, test and delivery of a feasibility model

NASA Technical Reports Server (NTRS)

1972-01-01

The conceptual design of a highly reliable 10 to the 8th power-bit bubble domain memory for the space program is described. The memory has random access to blocks of closed-loop shift registers, and utilizes self-contained bubble domain chips with on-chip decoding. Trade-off studies show that the highest reliability and lowest power dissipation is obtained when the memory is organized on a bit-per-chip basis. The final design has 800 bits/register, 128 registers/chip, 16 chips/plane, and 112 planes, of which only seven are activated at a time. A word has 64 data bits +32 checkbits, used in a 16-adjacent code to provide correction of any combination of errors in one plane. 100 KHz maximum rotational frequency keeps power low (equal to or less than, 25 watts) and also allows asynchronous operation. Data rate is 6.4 megabits/sec, access time is 200 msec to an 800-word block and an additional 4 msec (average) to a word. The fabrication and operation are also described for a 64-bit bubble domain memory chip designed to test the concept of on-chip magnetic decoding. Access to one of the chip's four shift registers for the read, write, and clear functions is by means of bubble domain decoders utilizing the interaction between a conductor line and a bubble.

Bubble Point Measurements with Liquid Methane of a Screen Channel Capillary Liquid Acquisition Device

NASA Technical Reports Server (NTRS)

Jurns, John M.; McQuillen, John B.; Gaby, Joseph D., Jr.; Sinacore, Steven A., Jr.

2009-01-01

Liquid acquisition devices (LADs) can be utilized within a propellant tank in space to deliver single-phase liquid to the engine in low gravity. One type of liquid acquisition device is a screened gallery whereby a fine mesh screen acts as a 'bubble filter' and prevents the gas bubbles from passing through until a crucial pressure differential condition across the screen, called the bubble point, is reached. This paper presents data for LAD bubble point data in liquid methane (LCH4) for stainless steel Dutch twill screens with mesh sizes of 325 by 2300. These tests represent the first known nonproprietary effort to collect bubble point data for LCH4.

Mathematical and experimental modelling of the dynamic bubble processes occurring in a two-phase cyclonic separation device

NASA Astrophysics Data System (ADS)

Schrage, Dean Stewart

1998-11-01

This dissertation presents a combined mathematical and experimental analysis of the fluid dynamics of a gas- liquid, dispersed-phase cyclonic separation device. The global objective of this research is to develop a simulation model of separation process in order to predict the void fraction field within a cyclonic separation device. The separation process is approximated by analyzing the dynamic motion of many single-bubbles, moving under the influence of the far-field, interacting with physical boundaries and other bubbles. The dynamic motion of the bubble is described by treating the bubble as a point-mass and writing an inertial force balance, equating the force applied to the bubble-point-location to the inertial acceleration of the bubble mass (also applied to the point-location). The forces which are applied to the bubble are determined by an integration of the surface pressure over the bubble. The surface pressure is coupled to the intrinsic motion of the bubble, and is very difficult to obtain exactly. However, under moderate Reynolds number, the wake trailing a bubble is small and the near-field flow field can be approximated as an inviscid flow field. Unconventional potential flow techniques are employed to solve for the surface pressure; the hydrodyamic forces are described as a hydrodynamic mass tensor operating on the bubble acceleration vector. The inviscid flow model is augmented with adjunct forces which describe: drag forces, dynamic lift, far-field pressure forces. The dynamic equations of motion are solved both analytically and numerically for the bubble trajectory in specific flow field examples. A validation of these equations is performed by comparing to an experimentally-derived trajectory of a single- bubble, which is released into a cylindrical Couette flow field (inner cylinder rotating) at varying positions. Finally, a simulation of a cyclonic separation device is performed by extending the single-bubble dynamic model to a multi-bubble ensemble. A simplified model is developed to predict the effects of bubble-interaction. The simulation qualitatively depicts the separation physics encountered in an actual cyclonic separation device, supporting the original tenet that the separation process can be approximated by the collective motions of single- bubbles.

Fundamentals handbook of electrical and computer engineering. Volume 1 Circuits fields and electronics

NASA Astrophysics Data System (ADS)

Chang, S. S. L.

State of the art technology in circuits, fields, and electronics is discussed. The principles and applications of these technologies to industry, digital processing, microwave semiconductors, and computer-aided design are explained. Important concepts and methodologies in mathematics and physics are reviewed, and basic engineering sciences and associated design methods are dealt with, including: circuit theory and the design of magnetic circuits and active filter synthesis; digital signal processing, including FIR and IIR digital filter design; transmission lines, electromagnetic wave propagation and surface acoustic wave devices. Also considered are: electronics technologies, including power electronics, microwave semiconductors, GaAs devices, and magnetic bubble memories; digital circuits and logic design.

'Blue bubble' technique: an ab interno approach for Descemet separation in deep anterior lamellar keratoplasty using trypan blue stained viscoelastic device.

PubMed

Livny, Eitan; Bahar, Irit; Hammel, Naama; Nahum, Yoav

2018-04-01

In this study, we examined a novel variant of 'big-bubble' deep anterior lamellar keratoplasty using trypan-blue-stained viscoelastic device for the creation of a pre-descemetic bubble. Ten corneoscleral rims were mounted on an artificial anterior chamber (AC). The AC was filled with air through a limbal paracentesis. A Melles' triangulated spatula was inserted through the paracentesis, with its tip penetrating the AC, was then slightly retracted and pushed into the deep stroma above the roof of the paracentesis. A mixture of trypan blue and viscoelastic device (Healon, Abbott Medical Optics, Abbott Park, Illinois) was injected into this intra-stromal pocket using a 27-G cannula to create a pre-descemetic separation bubble. Bubble type and visualization of dyed viscoelastic device were noted. The method was later employed in three cases. In all 10 corneoscleral rims, the technique successfully created a visible pre-descemetic (type 1) bubble that could be expanded up to the predicted diameter of trephination. Subsequent trephination and the removal of corneal stroma were uneventful. In two out of four clinical cases, a type 1 bubble was created, while in two others, visco-dissection failed and dyed viscoelastic was seen in the AC. The presented technique holds promise of being a relatively easy to perform, predictable and well-controlled alternative for achieving a type 1 bubble during deep anterior lamellar keratoplasty surgery. The trypan-blue-stained viscoelastic device facilitates proper visualization and control of the separation bubble and assists in identifying the penetrance to the separation bubble prior to removal of the stromal cap. © 2017 Royal Australian and New Zealand College of Ophthalmologists.

Modeling of a bubble-memory organization with self-checking translators to achieve high reliability.

NASA Technical Reports Server (NTRS)

Bouricius, W. G.; Carter, W. C.; Hsieh, E. P.; Wadia, A. B.; Jessep, D. C., Jr.

1973-01-01

Study of the design and modeling of a highly reliable bubble-memory system that has the capabilities of: (1) correcting a single 16-adjacent bit-group error resulting from failures in a single basic storage module (BSM), and (2) detecting with a probability greater than 0.99 any double errors resulting from failures in BSM's. The results of the study justify the design philosophy adopted of employing memory data encoding and a translator to correct single group errors and detect double group errors to enhance the overall system reliability.

Evaluation of stability and size distribution of sunflower oil-coated micro bubbles for localized drug delivery.

PubMed

Filho, Walter Duarte de Araujo; Schneider, Fábio Kurt; Morales, Rigoberto E M

2012-09-20

Micro bubbles were initially introduced as contrast agents for ultrasound examinations as they are able to modify the signal-to-noise ratio in imaging, thus improving the assessment of clinical information on human tissue. Recent developments have demonstrated the feasibility of using these bubbles as drug carriers in localized delivery. In micro fluidics devices for generation of micro bubbles, the bubbles are formed at interface of liquid gas through a strangulation process. A device that uses these features can produce micro bubbles with small size dispersion in a single step. A T-junction micro fluidic device constructed using 3D prototyping was made for the production of mono dispersed micro bubbles. These micro bubbles use sunflower oil as a lipid layer. Stability studies for micro bubbles with diameters different generated from a liquid phase of the same viscosity were conducted to evaluate whether micro bubbles can be used as drug carriers. The biocompatibility of coating layer, the ability to withstand environmental pressure variations combined with echogenicity, are key factors that they can safely play the role of drug transporters. The normal distribution curve with small dispersion of the diameter of bubbles validates the process of generating micro bubbles with low value of variation coefficient, i.e., 0.381 at 1.90%. The results also showed the feasibility of using sunflower oil as the lipid matrix with stable population of bubbles over 217 minutes for micro bubbles with an average diameter of 313.04 μm and 121 minutes for micro bubbles with an average diameter of 73.74 μm, considering bubbles with air as gaseous phase. The results indicate that the micro fluidic device designed can be used for producing micro bubbles with low variation coefficient using sunflower oil as a coating of micro bubbles. These carriers were stable for periods of time that are long enough for clinical applications even when regular air is used as the gas phase. Improved stability can be achieved when biocompatible gas with lower permeability is used.

Bubble Point Measurements with Liquid Methane of a Screen Capillary Liquid Acquisition Device

NASA Technical Reports Server (NTRS)

Jurns, John M.; McQuillen, John B.

2009-01-01

Liquid acquisition devices (LADs) can be utilized within a propellant tank in space to deliver single-phase liquid to the engine in low gravity. One type of liquid acquisition device is a screened gallery whereby a fine mesh screen acts as a bubble filter and prevents the gas bubbles from passing through until a crucial pressure differential condition across the screen, called the bubble point, is reached. This paper presents data for LAD bubble point data in liquid methane (LCH4) for stainless steel Dutch twill screens with mesh sizes of 325 by 2300 and 200 by 1400 wires per inch. Data is presented for both saturated and sub-cooled LCH4, and is compared with predicted values.

Evaluation of a Low-Cost Bubble CPAP System Designed for Resource-Limited Settings.

PubMed

Bennett, Desmond J; Carroll, Ryan W; Kacmarek, Robert M

2018-04-01

Respiratory compromise is a leading contributor to global neonatal death. CPAP is a method of treatment that helps maintain lung volume during expiration, promotes comfortable breathing, and improves oxygenation. Bubble CPAP is an effective alternative to standard CPAP. We sought to determine the reliability and functionality of a low-cost bubble CPAP device designed for low-resource settings. The low-cost bubble CPAP device was compared to a commercially available bubble CPAP system. The devices were connected to a lung simulator that simulated neonates of 4 different weights with compromised respiratory mechanics (∼1, ∼3, ∼5, and ∼10 kg). The devices' abilities to establish and maintain pressure and flow under normal conditions as well as under conditions of leak were compared. Multiple combinations of pressure levels (5, 8, and 10 cm H 2 O) and flow levels (3, 6, and 10 L/min) were tested. The endurance of both devices was also tested by running the systems continuously for 8 h and measuring the changes in pressure and flow. Both devices performed equivalently during the no-leak and leak trials. While our testing revealed individual differences that were statistically significant and clinically important (>10% difference) within specific CPAP and flow-level settings, no overall comparisons of CPAP or flow were both statistically significant and clinically important. Each device delivered pressures similar to the desired pressures, although the flows delivered by both machines were lower than the set flows in most trials. During the endurance trials, the low-cost device was marginally better at maintaining pressure, while the commercially available device was better at maintaining flow. The low-cost bubble CPAP device evaluated in this study is comparable to a bubble CPAP system used in developed settings. Extensive clinical trials, however, are necessary to confirm its effectiveness. Copyright © 2018 by Daedalus Enterprises.

Bias-field equalizer for bubble memories

NASA Technical Reports Server (NTRS)

Keefe, G. E.

1977-01-01

Magnetoresistive Perm-alloy sensor monitors bias field required to maintain bubble memory. Sensor provides error signal that, in turn, corrects magnitude of bias field. Error signal from sensor can be used to control magnitude of bias field in either auxiliary set of bias-field coils around permanent magnet field, or current in small coils used to remagnetize permanent magnet by infrequent, short, high-current pulse or short sequence of pulses.

Experimental and Computational Investigation of Microbubble Production in Microfluidic Flow-Focusing Devices

NASA Astrophysics Data System (ADS)

Weber, Michael; Shandas, Robin

2005-11-01

Micron-sized bubbles have been effectively used as contrast agents in ultrasound imaging systems and have the potential for many other applications including targeted drug delivery and tumor destruction. The further development of these applications is dependent on precise control of bubble size. Recently, microfluidic flow-focusing systems have emerged as a viable means of producing microbubbles with monodisperse size distributions. These systems focus co-flowing liquid streams surrounding a gas stream through a narrow orifice, producing bubbles in very reproducible manner. In this work, a photopolymerization technique has been used to produce microfludicic flow-focusing devices which were successfully used to produce micron-sized bubbles. The flow dynamics involved in these devices has also been simulated using a volume-of-fluid approach to simultaneously solve the equations of motion for both the gas and liquid phases. Simulations were run with several variations of the flow-focuser geometry (gas inlet width, orifice length, gas-liquid approach angle, etc.) in an effort to produce smaller bubbles and increase the working range of liquid and gas flow rates. These findings are being incorporated into the production of actual devices in an effort to improve the overall effectiveness of the bubble production process.

Passive chevron replicator

NASA Technical Reports Server (NTRS)

Oeffinger, Thomas R. (Inventor); Tocci, Leonard R. (Inventor)

1977-01-01

There is described a passive replicator device to be used in magnetic bubble domain systems. The replicator is passive, i.e., does not require an active element such as a current source or the like, and both propagates and replicates bubble domains. In a preferred embodiment, the replicator uses chevron type elements arranged in an appropriate pattern so as to interact with a pair of propagation paths wherein bubble domains are propagated. A bubble in one propagation path is routinely transferred therealong and, concurrently, replicated by the instant device into another propagation path. A plurality of elements arranged in juxtaposition to the chevrons assists in controlling the propagation of the bubbles through the respective propagation paths and, at the appropriate time, provides a cutting action wherein a bubble which is elongated between the chevrons of the two propagation paths is split into two separate bubbles.

A 1-1/2-level on-chip-decoding bubble memory chip design

NASA Technical Reports Server (NTRS)

Chen, T. T.

1975-01-01

Design includes multi-channel replicator which can reduce chip-writing requirement, selective annihilating switch which can effectively annihilate bubbles with minimum delay, and modified transfer switch which can be used as selective steering-type decoder.

An analytical approach to the rise velocity of periodic bubble trains in non-Newtonian fluids.

PubMed

Frank, X; Li, H Z; Funfschilling, D

2005-01-01

The present study aims at providing insight into the acceleration mechanism of a bubble chain rising in shear-thinning viscoelastic fluids. The experimental investigation by the Particle Image Velocimetry (PIV), birefringence visualisation and rheological simulation shows that two aspects are central to bubble interactions in such media: the stress creation by the passage of bubbles, and their relaxation due to the fluid's memory forming an evanescent corridor of reduced viscosity. Interactions between bubbles were taken into account mainly through a linear superposition of the stress evolution behind each bubble. An analytical approach together with the rheological consideration was developed to compute the rise velocity of a bubble chain in function of the injection period and bubble volume. The model predictions compare satisfactorily with the experimental investigation.

Bubble Memory Module.

DTIC Science & Technology

1980-12-01

I AD-A093 642 ROCKWELL INTERNATIONAL ANAHEIM CA AUOEISSTAE-T F/S V/2 I BU13LE MEMORY MODULE. (U) DEC 80 0 0 BOHNING. F J BECKER NASI -14174...Cde under Contract NASI -14174 Dist’m/o National Aeronautics and Space Administration Scientific and Technical Information BranchA 1980 J Approvod ior...9/ BUBBLE M MORY MODULE.(U) DEC 80 0 BHNING, F J BECKER NASI -14174 NCLASSIFIED CB-569/201 NASA-CR-3380 ML22-fllfllf ll l ff mmlmmmmm.l®fmmM EEmmEI

Fission gas detection system

DOEpatents

Colburn, Richard P.

1985-01-01

A device for collecting fission gas released by a failed fuel rod which device uses a filter to pass coolant but which filter blocks fission gas bubbles which cannot pass through the filter due to the surface tension of the bubble.

Titan probe technology assessment and technology development plan study

NASA Technical Reports Server (NTRS)

Castro, A. J.

1980-01-01

The need for technology advances to accomplish the Titan probe mission was determined by defining mission conditions and requirements and evaluating the technology impact on the baseline probe configuration. Mission characteristics found to be technology drivers include (1) ten years dormant life in space vacuum; (2) unknown surface conditions, various sample materials, and a surface temperature; and (3) mission constraints of the Saturn Orbiter Dual Probe mission regarding weight allocation. The following areas were identified for further development: surface sample acquisition system; battery powered system; nonmetallic materials; magnetic bubble memory devices, and the landing system. Preentry science, reliability, and weight reduction and redundancy must also be considered.

21 CFR 870.4205 - Cardiopulmonary bypass bubble detector.

Code of Federal Regulations, 2013 CFR

2013-04-01

... 21 Food and Drugs 8 2013-04-01 2013-04-01 false Cardiopulmonary bypass bubble detector. 870.4205 Section 870.4205 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES... bypass bubble detector. (a) Identification. A cardiopulmonary bypass bubble detector is a device used to...

21 CFR 870.4205 - Cardiopulmonary bypass bubble detector.

Code of Federal Regulations, 2010 CFR

2010-04-01

... 21 Food and Drugs 8 2010-04-01 2010-04-01 false Cardiopulmonary bypass bubble detector. 870.4205 Section 870.4205 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES... bypass bubble detector. (a) Identification. A cardiopulmonary bypass bubble detector is a device used to...

21 CFR 870.4205 - Cardiopulmonary bypass bubble detector.

Code of Federal Regulations, 2011 CFR

2011-04-01

... 21 Food and Drugs 8 2011-04-01 2011-04-01 false Cardiopulmonary bypass bubble detector. 870.4205 Section 870.4205 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES... bypass bubble detector. (a) Identification. A cardiopulmonary bypass bubble detector is a device used to...

21 CFR 870.4205 - Cardiopulmonary bypass bubble detector.

Code of Federal Regulations, 2014 CFR

2014-04-01

... 21 Food and Drugs 8 2014-04-01 2014-04-01 false Cardiopulmonary bypass bubble detector. 870.4205 Section 870.4205 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES... bypass bubble detector. (a) Identification. A cardiopulmonary bypass bubble detector is a device used to...

21 CFR 870.4205 - Cardiopulmonary bypass bubble detector.

Code of Federal Regulations, 2012 CFR

2012-04-01

... 21 Food and Drugs 8 2012-04-01 2012-04-01 false Cardiopulmonary bypass bubble detector. 870.4205 Section 870.4205 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES... bypass bubble detector. (a) Identification. A cardiopulmonary bypass bubble detector is a device used to...

Optical and Acoustic Device Applications of Ferroelastic Crystals

NASA Astrophysics Data System (ADS)

Meeks, Steven Wayne

This dissertation presents the discovery of a means of creating uniformly periodic domain gratings in a ferroelastic crystal of neodymium pentaphosphate (NPP). The uniform and non-uniform domain structures which can be created in NPP have the potential applications as tunable active gratings for lasers, tunable diffraction gratings, tunable Bragg reflection gratings, tunable acoustic filters, optical modulators, and optical domain wall memories. The interaction of optical and acoustic waves with ferroelastic domain walls in NPP is presented in detail. Acoustic amplitude reflection coefficients from a single domain wall in NPP are much larger than other ferroelastic-ferroelectrics such as gadolinium molybdate (GMO). Domain walls of NPP are used to make two demonstration acoustic devices: a tunable comb filter and a tunable delay line. The tuning process is accomplished by moving the position of the reflecting surface (the domain wall). A theory of the reflection of optical waves from NPP domain walls is discussed. The optical reflection is due to a change in the polarization of the wave, and not a change in the index, as the wave crosses the domain wall. Theoretical optical power reflection coefficients show good agreement with the experimentally measured values. The largest optical reflection coefficient of a single domain wall is at a critical angle and is 2.2% per domain wall. Techniques of injecting periodic and aperiodic domain walls into NPP are presented. The nucleation process of the uniformly periodic domain gratings in NPP is described in terms of a newly-discovered domain structure, namely the ferroelastic bubble. A ferroelastic bubble is the elastic analogue to the well-known magnetic bubble. The period of the uniformly periodic domain grating is tunable from 100 to 0.5 microns and the grating period may be tuned relatively rapidly. The Bragg efficiency of these tunable gratings is 77% for an uncoated crystal. Several demonstration devices which use these periodic structures are discussed. These devices are a tunable active grating laser (TAG laser), a tunable active grating (TAG), and a tunable acoustic bulk wave filter.

Liter-scale production of uniform gas bubbles via parallelization of flow-focusing generators.

PubMed

Jeong, Heon-Ho; Yadavali, Sagar; Issadore, David; Lee, Daeyeon

2017-07-25

Microscale gas bubbles have demonstrated enormous utility as versatile templates for the synthesis of functional materials in medicine, ultra-lightweight materials and acoustic metamaterials. In many of these applications, high uniformity of the size of the gas bubbles is critical to achieve the desired properties and functionality. While microfluidics have been used with success to create gas bubbles that have a uniformity not achievable using conventional methods, the inherently low volumetric flow rate of microfluidics has limited its use in most applications. Parallelization of liquid droplet generators, in which many droplet generators are incorporated onto a single chip, has shown great promise for the large scale production of monodisperse liquid emulsion droplets. However, the scale-up of monodisperse gas bubbles using such an approach has remained a challenge because of possible coupling between parallel bubbles generators and feedback effects from the downstream channels. In this report, we systematically investigate the effect of factors such as viscosity of the continuous phase, capillary number, and gas pressure as well as the channel uniformity on the size distribution of gas bubbles in a parallelized microfluidic device. We show that, by optimizing the flow conditions, a device with 400 parallel flow focusing generators on a footprint of 5 × 5 cm 2 can be used to generate gas bubbles with a coefficient of variation of less than 5% at a production rate of approximately 1 L h -1 . Our results suggest that the optimization of flow conditions using a device with a small number (e.g., 8) of parallel FFGs can facilitate large-scale bubble production.

Passive gas separator and accumulator device

DOEpatents

Choe, H.; Fallas, T.T.

1994-08-02

A separation device employing a gas separation filter and swirler vanes for separating gas from a gas-liquid mixture is provided. The cylindrical filter utilizes the principle that surface tension in the pores of the filter prevents gas bubbles from passing through. As a result, the gas collects in the interior region of the filter and coalesces to form larger bubbles in the center of the device. The device is particularly suited for use in microgravity conditions since the swirlers induce a centrifugal force which causes liquid to move from the inner region of the filter, pass the pores, and flow through the outlet of the device while the entrained gas is trapped by the filter. The device includes a cylindrical gas storage screen which is enclosed by the cylindrical gas separation filter. The screen has pores that are larger than those of the filters. The screen prevents larger bubbles that have been formed from reaching and interfering with the pores of the gas separation filter. The device is initially filled with a gas other than that which is to be separated. This technique results in separation of the gas even before gas bubbles are present in the mixture. Initially filling the device with the dissimilar gas and preventing the gas from escaping before operation can be accomplished by sealing the dissimilar gas in the inner region of the separation device with a ruptured disc which can be ruptured when the device is activated for use. 3 figs.

Passive gas separator and accumulator device

DOEpatents

Choe, Hwang; Fallas, Thomas T.

1994-01-01

A separation device employing a gas separation filter and swirler vanes for separating gas from a gasliquid mixture is provided. The cylindrical filter utilizes the principle that surface tension in the pores of the filter prevents gas bubbles from passing through. As a result, the gas collects in the interior region of the filter and coalesces to form larger bubbles in the center of the device. The device is particularly suited for use in microgravity conditions since the swirlers induce a centrifugal force which causes liquid to move from the inner region of the filter, pass the pores, and flow through the outlet of the device while the entrained gas is trapped by the filter. The device includes a cylindrical gas storage screen which is enclosed by the cylindrical gas separation filter. The screen has pores that are larger than those of the filters. The screen prevents larger bubbles that have been formed from reaching and interfering with the pores of the gas separation filter. The device is initially filled with a gas other than that which is to be separated. This technique results in separation of the gas even before gas bubbles are present in the mixture. Initially filling the device with the dissimilar gas and preventing the gas from escaping before operation can be accomplished by sealing the dissimilar gas in the inner region of the separation device with a ruptured disc which can be ruptured when the device is activated for use.

Mixing high-viscosity fluids via acoustically driven bubbles

NASA Astrophysics Data System (ADS)

Orbay, Sinem; Ozcelik, Adem; Lata, James; Kaynak, Murat; Wu, Mengxi; Huang, Tony Jun

2017-01-01

We present an acoustofluidic micromixer which can perform rapid and homogeneous mixing of highly viscous fluids in the presence of an acoustic field. In this device, two high-viscosity polyethylene glycol (PEG) solutions were co-injected into a three-inlet PDMS microchannel with the center inlet containing a constant stream of nitrogen flow which forms bubbles in the device. When these bubbles were excited by an acoustic field generated via a piezoelectric transducer, the two solutions mixed homogenously due to the combination of acoustic streaming, droplet ejection, and bubble eruption effects. The mixing efficiency of this acoustofluidic device was evaluated using PEG-700 solutions which are ~106 times more viscous than deionized (DI) water. Our results indicate homogenous mixing of the PEG-700 solutions with a ~0.93 mixing index. The acoustofluidic micromixer is compact, inexpensive, easy to operate, and has the capacity to mix highly viscous fluids within 50 ms.

Advanced detectors and signal processing for bubble memories

NASA Technical Reports Server (NTRS)

Kryder, M. H.; Rasky, P. H. L.; Greve, D. W.

1985-01-01

The feasibility of combining silicon and magnetic bubble technologies is demonstrated. Results of bubble film annealing indicate that a low temperature silicon on garnet technology is the most likely one to succeed commercially. Annealing ambients are also shown to have a major effect on the magnetic properties of bubble films. Functional MOSFETs were fabricated on bubble films coated with thick (approximately 1 micron) SiO2 layers. The two main problems with these silicon on garnet MOSFETs are low electron mobilities and large gate leakage currents. Results indicate that the laser recrystallized silicon and gate oxide (SiO2) layers are contaminated. The data suggest that part of the contaminating ions originate in the sputtered oxide spacer layer and part originates in the bubble film itself. A diffusion barrier, such as silicon nitride, placed between the bubble film and the silicon layer should eliminate the contamination induced problem.

Exploring bubble oscillation and mass transfer enhancement in acoustic-assisted liquid-liquid extraction with a microfluidic device

NASA Astrophysics Data System (ADS)

Xie, Yuliang; Chindam, Chandraprakash; Nama, Nitesh; Yang, Shikuan; Lu, Mengqian; Zhao, Yanhui; Mai, John D.; Costanzo, Francesco; Huang, Tony Jun

2015-07-01

We investigated bubble oscillation and its induced enhancement of mass transfer in a liquid-liquid extraction process with an acoustically-driven, bubble-based microfluidic device. The oscillation of individually trapped bubbles, of known sizes, in microchannels was studied at both a fixed frequency, and over a range of frequencies. Resonant frequencies were analytically identified and were found to be in agreement with the experimental observations. The acoustic streaming induced by the bubble oscillation was identified as the cause of this enhanced extraction. Experiments extracting Rhodanmine B from an aqueous phase (DI water) to an organic phase (1-octanol) were performed to determine the relationship between extraction efficiency and applied acoustic power. The enhanced efficiency in mass transport via these acoustic-energy-assisted processes was confirmed by comparisons against a pure diffusion-based process.

Redundancy approaches in bubble domain memories

NASA Technical Reports Server (NTRS)

Almasi, G. S.; Schuster, S. E.

1972-01-01

Fabrication of integrated circuit chips to compensate for faulty memory elements is discussed. Procedure for testing chips to determine extent of redundancy and faults is described. Mathematical model to define operation is presented. Schematic circuit diagram of test equipment is provided.

Testing Fundamental Properties of Ionic Liquids for Colloid Microthruster Applications

NASA Technical Reports Server (NTRS)

Anderson, John R.; Plett, Gary; Anderson, Mark; Ziemer, John

2006-01-01

NASA's New Millennium Program is scheduled to test a Disturbance Reduction System (DRS) on Space Technology 7 (ST7) as part of the European Space Agency's (ESA's) LISA Pathfinder Mission in late 2009. Colloid Micronewton Thrusters (CMNTs) will be used to counteract forces, mainly solar photon pressure, that could disturb gravitational reference sensors as part of the DRS. The micronewton thrusters use an ionic liquid, a room temperature molten salt, as propellant. The ionic liquid has a number of unusual properties that have a direct impact on thruster design. One of the most important issues is bubble formation before and during operation, especially during rapid pressure transitions from atmospheric to vacuum conditions. Bubbles have been observed in the feed system causing variations in propellant flow rate that can adversely affect thruster control. Bubbles in the feed system can also increase the likelihood that propellant will spray onto surfaces that can eventually lead to shorting high voltage electrodes. Two approaches, reducing the probability of bubble formation and removing bubbles with a new bubble eliminator device in the flow system, were investigated at Busek Co., Inc. and the Jet Propulsion Laboratory (JPL) to determine the effectiveness of both approaches. Results show that bubble formation is mainly caused by operation at low pressure and volatile contaminants in the propellant coming out of solution. A specification for the maximum tolerable level of contamination has been developed, and procedures for providing system cleanliness have been tested and implemented. The bubble eliminator device has also been tested successfully and has been implemented in recent thruster designs at Busek. This paper focuses on the propellant testing work at JPL, including testing of a breadboard level bubble eliminator device.

Feasibility of an in situ measurement device for bubble size and distribution.

PubMed

Junker, Beth; Maciejak, Walter; Darnell, Branson; Lester, Michael; Pollack, Michael

2007-09-01

The feasibility of in situ measurement device for bubble size and distribution was explored. A novel in situ probe measurement system, the EnviroCam, was developed. Where possible, this probe incorporated strengths, and minimized weaknesses of historical and currently available real-time measurement methods for bubbles. The system was based on a digital, high-speed, high resolution, modular camera system, attached to a stainless steel shroud, compatible with standard Ingold ports on fermenters. Still frames and/or video were produced, capturing bubbles passing through the notch of the shroud. An LED light source was integral with the shroud. Bubbles were analyzed using customized commercially available image analysis software and standard statistical methods. Using this system, bubble sizes were measured as a function of various operating parameters (e.g., agitation rate, aeration rate) and as a function of media properties (e.g., viscosity, antifoam, cottonseed flour, and microbial/animal cell broths) to demonstrate system performance and its limitations. For selected conditions, mean bubble size changes qualitatively compared favorably with published relationships. Current instrument measurement capabilities were limited primarily to clear solutions that did not contain large numbers of overlapping bubbles.

Patient warming excess heat: the effects on orthopedic operating room ventilation performance.

PubMed

Belani, Kumar G; Albrecht, Mark; McGovern, Paul D; Reed, Mike; Nachtsheim, Christopher

2013-08-01

Patient warming has become a standard of care for the prevention of unintentional hypothermia based on benefits established in general surgery. However, these benefits may not fully translate to contamination-sensitive surgery (i.e., implants), because patient warming devices release excess heat that may disrupt the intended ceiling-to-floor ventilation airflows and expose the surgical site to added contamination. Therefore, we studied the effects of 2 popular patient warming technologies, forced air and conductive fabric, versus control conditions on ventilation performance in an orthopedic operating room with a mannequin draped for total knee replacement. Ventilation performance was assessed by releasing neutrally buoyant detergent bubbles ("bubbles") into the nonsterile region under the head-side of the anesthesia drape. We then tracked whether the excess heat from upper body patient warming mobilized the "bubbles" into the surgical site. Formally, a randomized replicated design assessed the effect of device (forced air, conductive fabric, control) and anesthesia drape height (low-drape, high-drape) on the number of bubbles photographed over the surgical site. The direct mass-flow exhaust from forced air warming generated hot air convection currents that mobilized bubbles over the anesthesia drape and into the surgical site, resulting in a significant increase in bubble counts for the factor of patient warming device (P < 0.001). Forced air had an average count of 132.5 versus 0.48 for conductive fabric (P = 0.003) and 0.01 for control conditions (P = 0.008) across both drape heights. Differences in average bubble counts across both drape heights were insignificant between conductive fabric and control conditions (P = 0.87). The factor of drape height had no significant effect (P = 0.94) on bubble counts. Excess heat from forced air warming resulted in the disruption of ventilation airflows over the surgical site, whereas conductive patient warming devices had no noticeable effect on ventilation airflows. These findings warrant future research into the effects of forced air warming excess heat on clinical outcomes during contamination-sensitive surgery.

Dynamics of sonoluminescing bubbles within a liquid hammer device.

PubMed

Urteaga, Raúl; García-Martínez, Pablo Luis; Bonetto, Fabián J

2009-01-01

We studied the dynamics of a single sonoluminescing bubble (SBSL) in a liquid hammer device. In particular, we investigated the phosphoric acid-xenon system, in which pulses up to four orders of magnitude brighter than SBSL in water systems (about 10;{12} photons per pulse) have been previously reported [Chakravarty, Phys. Rev. E 69, 066317 (2004)]. We used stroboscopic photography and a Mie scattering technique in order to measure the radius evolution of the bubbles. Under adequate conditions we may position a bubble at the bottom of the tube (cavity) and a second bubble trapped at the middle of the tube (upper bubble). During its collapse, the cavity produces the compression of the liquid column. This compression drives impulsively the dynamics of the upper bubble. Our measurements reveal that the observed light emissions produced by the upper bubble are generated at its second collapse. We employed a simple numerical model to investigate the conditions that occur during the upper bubble collapse. We found good agreement between numerical and experimental values for the light intensity (fluence) and light pulse widths. Results from the model show that the light emission is increased mainly due to an increase in noble gas ambient radius and not because the maximum temperature increases. Even for the brightest pulses obtained ( 2x10;{13} photons, about 20W of peak power) the maximum temperatures computed for the upper bubble are always lower than 20000K .

Investigation of system integration methods for bubble domain flight recorders

NASA Technical Reports Server (NTRS)

Chen, T. T.; Bohning, O. D.

1975-01-01

System integration methods for bubble domain flight records are investigated. Bubble memory module packaging and assembly, the control electronics design and construction, field coils, and permanent magnet bias structure design are studied. A small 60-k bit engineering model was built and tested to demonstrate the feasibility of the bubble recorder. Based on the various studies performed, a projection is made on a 50,000,000-bit prototype recorder. It is estimated that the recorder will occupy 190 cubic in., weigh 12 lb, and consume 12 w power when all of its four tracks are operated in parallel at 150 kHz data rate.

Exploring bubble oscillation and mass transfer enhancement in acoustic-assisted liquid-liquid extraction with a microfluidic device

PubMed Central

Xie, Yuliang; Chindam, Chandraprakash; Nama, Nitesh; Yang, Shikuan; Lu, Mengqian; Zhao, Yanhui; Mai, John D.; Costanzo, Francesco; Huang, Tony Jun

2015-01-01

We investigated bubble oscillation and its induced enhancement of mass transfer in a liquid-liquid extraction process with an acoustically-driven, bubble-based microfluidic device. The oscillation of individually trapped bubbles, of known sizes, in microchannels was studied at both a fixed frequency, and over a range of frequencies. Resonant frequencies were analytically identified and were found to be in agreement with the experimental observations. The acoustic streaming induced by the bubble oscillation was identified as the cause of this enhanced extraction. Experiments extracting Rhodanmine B from an aqueous phase (DI water) to an organic phase (1-octanol) were performed to determine the relationship between extraction efficiency and applied acoustic power. The enhanced efficiency in mass transport via these acoustic-energy-assisted processes was confirmed by comparisons against a pure diffusion-based process. PMID:26223474

Preliminary design for a standard 10 sup 7 bit Solid State Memory (SSM)

NASA Technical Reports Server (NTRS)

Hayes, P. J.; Howle, W. M., Jr.; Stermer, R. L., Jr.

1978-01-01

A modular concept with three separate modules roughly separating bubble domain technology, control logic technology, and power supply technology was employed. These modules were respectively the standard memory module (SMM), the data control unit (DCU), and power supply module (PSM). The storage medium was provided by bubble domain chips organized into memory cells. These cells and the circuitry for parallel data access to the cells make up the SMM. The DCU provides a flexible serial data interface to the SMM. The PSM provides adequate power to enable one DCU and one SMM to operate simultaneously at the maximum data rate. The SSM was designed to handle asynchronous data rates from dc to 1.024 Mbs with a bit error rate less than 1 error in 10 to the eight power bits. Two versions of the SSM, a serial data memory and a dual parallel data memory were specified using the standard modules. The SSM specification includes requirements for radiation hardness, temperature and mechanical environments, dc magnetic field emission and susceptibility, electromagnetic compatibility, and reliability.

Screen Channel Liquid Acquisition Devices for Cryogenic Propellants

NASA Technical Reports Server (NTRS)

Chato, David J.; Kudlac, Maureen T.

2005-01-01

This paper describes an on-going project to study the application screen channel liquid acquisition devices to cryogenic propellant systems. The literature of screen liquid acquisition devices is reviewed for prior cryogenic experience. Test programs and apparatus are presented to study these devices. Preliminary results are shown demonstrating bubble points for 200 x 1400 wires per inch and 325 x 2300 wires per inch Dutch twill screens. The 200 x 1400 screen has a bubble point of 15.8 inches of water in isopropyl alcohol and 6.6 inches of water in liquid nitrogen. The 325 x 2300 screen has a bubble point of 24.5 inches of water in isopropyl alcohol, 10.7 inches of water in liquid nitrogen, and 1.83 inches of water in liquid hydrogen. These values are found to be in good agreement with the results reported in the literature.

Biomedical device prototype based on small scale hydrodynamic cavitation

NASA Astrophysics Data System (ADS)

Ghorbani, Morteza; Sozer, Canberk; Alcan, Gokhan; Unel, Mustafa; Ekici, Sinan; Uvet, Huseyin; Koşar, Ali

2018-03-01

This study presents a biomedical device prototype based on small scale hydrodynamic cavitation. The application of small scale hydrodynamic cavitation and its integration to a biomedical device prototype is offered as an important alternative to other techniques, such as ultrasound therapy, and thus constitutes a local, cheap, and energy-efficient solution, for urinary stone therapy and abnormal tissue ablation (e.g., benign prostate hyperplasia (BPH)). The destructive nature of bubbly, cavitating, flows was exploited, and the potential of the prototype was assessed and characterized. Bubbles generated in a small flow restrictive element (micro-orifice) based on hydrodynamic cavitation were utilized for this purpose. The small bubbly, cavitating, flow generator (micro-orifice) was fitted to a small flexible probe, which was actuated with a micromanipulator using fine control. This probe also houses an imaging device for visualization so that the emerging cavitating flow could be locally targeted to the desired spot. In this study, the feasibility of this alternative treatment method and its integration to a device prototype were successfully accomplished.

Measurement of interactions between solid particles, liquid droplets, and/or gas bubbles in a liquid using an integrated thin film drainage apparatus.

PubMed

Wang, Louxiang; Sharp, David; Masliyah, Jacob; Xu, Zhenghe

2013-03-19

A novel device was designed to measure drainage dynamics of thin liquid films confined between a solid particle, an immiscible liquid droplet, and/or gas bubble. Equipped with a bimorph force sensor, a computer-interfaced video capture, and a data acquisition system, the newly designed integrated thin film drainage apparatus (ITFDA) allows for the direct and simultaneous measurements of force barrier, true film drainage time, and bubble/droplet deformation under a well-controlled external force, receding and advancing contact angles, capillary force, and adhesion (detachment) force between an air bubble or oil droplet and a solid, a liquid, or an air bubble in an immiscible liquid. Using the diaphragm of a high-frequency speaker as the drive mechanism for the air bubble or oil droplet attached to a capillary tube, this newly designed device is capable of measuring forces over a wide range of hydrodynamic conditions, including bubble approach and retract velocities up to 50 mm/s and displacement range up to 1 mm. The results showed that the ITFDA was capable of measuring hydrodynamic resistance, film drainage time, and other important physical parameters between air bubbles and solid particles in aqueous solutions. As an example of illustrating the versatility, the ITFDA was also applied to other important systems such as interactions between air bubble and oil droplet, two air bubbles, and two oil droplets in an aqueous solution.

Flight Control Using Distributed Shape-Change Effector Arrays

NASA Technical Reports Server (NTRS)

Raney, David L.; Montgomery, Raymond C.; Green, Lawrence I.; Park, Michael A.

2000-01-01

Recent discoveries in material science and fluidics have been used to create a variety of novel effector devices that offer great potential to enable new approaches to aerospace vehicle flight control. Examples include small inflatable blisters, shape-memory alloy diaphragms, and piezoelectric patches that may be used to produce distortions or bumps on the surface of an airfoil to generate control moments. Small jets have also been used to produce a virtual shape-change through fluidic means by creating a recirculation bubble on the surface of an airfoil. An advanced aerospace vehicle might use distributed arrays of hundreds of such devices to generate moments for stabilization and maneuver control, either augmenting or replacing conventional ailerons, flaps or rudders. This research demonstrates the design and use of shape-change device arrays for a tailless aircraft in a low-rate maneuvering application. A methodology for assessing the control authority of the device arrays is described, and a suite of arrays is used in a dynamic simulation to illustrate allocation and deployment methodologies. Although the authority of the preliminary shape-change array designs studied in this paper appeared quite low, the simulation results indicate that the effector suite possessed sufficient authority to stabilize and maneuver the vehicle in mild turbulence.

Eternal inflation, bubble collisions, and the disintegration of the persistence of memory

NASA Astrophysics Data System (ADS)

Freivogel, Ben; Kleban, Matthew; Nicolis, Alberto; Sigurdson, Kris

2009-08-01

We compute the probability distribution for bubble collisions in an inflating false vacuum which decays by bubble nucleation. Our analysis generalizes previous work of Guth, Garriga, and Vilenkin to the case of general cosmological evolution inside the bubble, and takes into account the dynamics of the domain walls that form between the colliding bubbles. We find that incorporating these effects changes the results dramatically: the total expected number of bubble collisions in the past lightcone of a typical observer is N ~ γ Vf/Vi , where γ is the fastest decay rate of the false vacuum, Vf is its vacuum energy, and Vi is the vacuum energy during inflation inside the bubble. This number can be large in realistic models without tuning. In addition, we calculate the angular position and size distribution of the collisions on the cosmic microwave background sky, and demonstrate that the number of bubbles of observable angular size is NLS ~ (Ωk)1/2N, where Ωk is the curvature contribution to the total density at the time of observation. The distribution is almost exactly isotropic.

Investigation on the ability of an ultrasound bubble detector to deliver size measurements of gaseous bubbles in fluid lines by using a glass bead model.

PubMed

Eitschberger, S; Henseler, A; Krasenbrink, B; Oedekoven, B; Mottaghy, K

2001-01-01

Detectors based on ultrasonic principles are today's state of the art devices to detect gaseous bubbles that may be present in extracorporeal circuits (ECC) for various reasons. Referring to theoretical considerations and other studies, it also seems possible to use this technology to measure the size of detected bubbles, thus offering the chance to evaluate their potential hazardous effect if introduced into a patient's circulation. Based on these considerations, a commercially available ultrasound bubble detector has been developed by Hatteland Instrumentering, Norway, to deliver bubble size measurements by means of supplementary software. This device consists of an ultrasound sensor that can be clamped onto the ECC tubing, and the necessary electronic equipment to amplify and rectify the received signals. It is supplemented by software that processes these signals and presents them as specific data. On the basis of our knowledge and experience with bubble detection by ultrasound technology, we believe it is particularly difficult to meet all the requirements for size measurements, especially if these are to be achieved by using a mathematical procedure rather than exact devices. Therefore, we tried to evaluate the quality of the offered bubble detector in measuring bubble sizes. After establishing a standardized test stand, including a roller pump and a temperature sensor, we performed several sets of experiments using the manufacturers software and a program specifically designed at our department for this purpose. The first set revealed that the manufacturer's recommended calibration material did not meet essential requirements as established by other authors. Having solved that problem, we could actually demonstrate that the ultrasonic field, as generated by the bubble detector, has been correctly calculated by the manufacturer. Simply, it is a field having the strongest reflecting region in the center, subsequently losing strength toward the ECC tubing's edge. The following set of experiments revealed that the supplementary software not only does not compensate for the ultrasonic field's inhomogeneity, but, furthermore, delivers results that are inappropriate to the applied calibration material. In the last set of experiments, we were able to demonstrate that the signals as recorded by the bubble detector heavily depend upon the circulating fluid's temperature, a fact that the manufacturer does not address. Therefore, it seems impossible to resolve all these sensor related problems by ever-increasing mathematical intervention. We believe it is more appropriate to develop a new kind of ultrasound device, free of these shortcomings. This seems to be particularly useful, because the problem of determining the size of gaseous bubbles in ECC is not yet solved.

A Decision Model for Selection of Microcomputers and Operating Systems.

DTIC Science & Technology

1984-06-01

is resilting in application software (for microccmputers) being developed almost exclu- sively tor the IBM PC and compatiole systems. NAVDAC ielt that...location can be indepen- dently accessed. RAN memory is also often called read/ write memory, hecause new information can be written into and read from...when power is lost; this is also read/ write memory. Bubble memory, however, has significantly slower access times than RAM or RON and also is not preva

Making a Laser Level

ERIC Educational Resources Information Center

Hawkins, Harry

2004-01-01

This article describes how to construct a laser level. This laser level can be made using a typical 4' (or shorter) bubble level and a small laser point. The laser unit is detachable, so the bubble level can also be used in the conventional way. However, the laser level works better than a simple bubble level. Making this inexpensive device is an…

Direct observation of the topological spin configurations mediated by the substitution of rare-earth element Y in MnNiGa alloy.

PubMed

Zuo, S L; Zhang, Y; Peng, L C; Zhao, X; Li, R; Li, H; Xiong, J F; He, M; Zhao, T Y; Sun, J R; Hu, F X; Shen, B G

2018-02-01

The evolution of topological magnetic domains microscopically correlates the dynamic behavior of memory units in spintronic application. Nanometric bubbles with variation of spin configurations have been directly observed in a centrosymmetric hexagonal magnet (Mn 0.5 Ni 0.5 ) 65 (Ga 1-y Y y ) 35 (y = 0.01) using Lorentz transmission electron microscopy. Magnetic bubbles instead of biskyrmions are generated due to the enhancement of quality factor Q caused by the substitution of rare-earth element Y. Furthermore, the bubble density and diversified spin configurations are systematically manipulated via combining the electric current with perpendicular magnetic fields. The magnetic bubble lattice at zero field is achieved after the optimized manipulation.

Portable rotating discharge plasma device

NASA Astrophysics Data System (ADS)

Dwyer, B. L.; Brooks, N. H.; Lee, R. L.

2011-10-01

We constructed two devices for the purpose of educational demonstration: a rotating tube containing media of two densities to demonstrate axial confinement and a similar device that uses pressure variation to convert a long plasma glow discharge into a long straight arc. In the first device, the buoyant force is countered by the centripetal force, which confines less dense materials to the center of the column. Similarly, a plasma arc heats the gas through which it passes, creating a hot gaseous bubble that is less dense than the surrounding medium. Rotating its containment envelope stabilizes this gas bubble in an analogous manner to an air bubble in a rotating tube of water. In addition to stabilization, the rotating discharge also exhibits a decrease in buoyancy-driven convection currents. This limits the power loss to the walls, which decreases the field strength requirement for maintaining the arc. These devices demonstrate principles of electrodynamics, plasma physics, and fluid mechanics. They are portable and safe for classroom use. Work supported by US DOE under DE-FC02-04ER54698 and the National Undergraduate Fellowship in Fusion Science and Engineering.

Steering air bubbles with an add-on vacuum layer for biopolymer membrane biofabrication in PDMS microfluidics.

PubMed

Pham, Phu; Vo, Thanh; Luo, Xiaolong

2017-01-17

Membrane functionality is crucial in microfluidics for realizing operations such as filtration, separation, concentration, signaling among cells and gradient generation. Currently, common methods often sandwich commercially available membranes in multi-layer devices, or use photopolymerization or temperature-induced gelation to fabricate membrane structures in one-layer devices. Biofabrication offers an alternative to forming membrane structures with biomimetic materials and mechanisms in mild conditions. We have recently developed a biofabrication strategy to form parallel biopolymer membranes in gas-permeable polydimethylsiloxane (PDMS) microfluidic devices, which used positive pressure to dissipate air bubbles through PDMS to initiate membrane formation but required careful pressure balancing between two flows. Here, we report a technical innovation by simply placing as needed an add-on PDMS vacuum layer on PDMS microfluidic devices to dissipate air bubbles and guide the biofabrication of biopolymer membranes. Vacuuming through PDMS was simply achieved by either withdrawing a syringe or releasing a squeezed nasal aspirator. Upon vacuuming, air bubbles dissipated within minutes, membranes were effortlessly formed, and the add-on vacuum layer can be removed. Subsequent membrane growth could be robustly controlled with the flows and pH of solutions. This new process is user-friendly and has achieved a 100% success rate in more than 200 trials in membrane biofabrication.

A millisecond micromixer via single-bubble-based acoustic streaming.

PubMed

Ahmed, Daniel; Mao, Xiaole; Shi, Jinjie; Juluri, Bala Krishna; Huang, Tony Jun

2009-09-21

We present ultra-fast homogeneous mixing inside a microfluidic channel via single-bubble-based acoustic streaming. The device operates by trapping an air bubble within a "horse-shoe" structure located between two laminar flows inside a microchannel. Acoustic waves excite the trapped air bubble at its resonance frequency, resulting in acoustic streaming, which disrupts the laminar flows and triggers the two fluids to mix. Due to this technique's simple design, excellent mixing performance, and fast mixing speed (a few milliseconds), our single-bubble-based acoustic micromixer may prove useful for many biochemical studies and applications.

Time-resolved imaging of electrical discharge development in underwater bubbles

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tu, Yalong; Xia, Hualei; Yang, Yong, E-mail: yangyong@hust.edu.cn, E-mail: luxinpei@hust.edu.cn

2016-01-15

The formation and development of plasma in single air bubbles submerged in water were investigated. The difference in the discharge dynamics and the after-effects on the bubble were investigated using a 900 000 frame per second high-speed charge-coupled device camera. It was observed that depending on the position of the electrodes, the breakdown could be categorized into two modes: (1) direct discharge mode, where the high voltage and ground electrodes were in contact with the bubble, and the streamer would follow the shortest path and propagate along the axis of the bubble and (2) dielectric barrier mode, where the groundmore » electrode was not in touch with the bubble surface, and the streamer would form along the inner surface of the bubble. The oscillation of the bubble and the development of instabilities on the bubble surface were also discussed.« less

Swedish Defence Research Abstracts 82/83-2 (Froe Foersvars Forsknings Referat 82/83-2).

DTIC Science & Technology

1983-08-01

alarm (78) Carbon dioxide retention inside motorcycle helmets (79) Vibration and decompression gas bubbles (80) No effects of nootropic drugs on memory... nootropic drugs on memory and psychomotor performance during reduced air pressure (in English) S. Levander and others Report I from the Roche Clinical Unit

Removal of residual nuclei following a cavitation event using low-amplitude ultrasound.

PubMed

Duryea, Alexander P; Cain, Charles A; Tamaddoni, Hedieh A; Roberts, William W; Hall, Timothy L

2014-10-01

Microscopic residual bubble nuclei can persist on the order of 1 s following a cavitation event. These bubbles can limit the efficacy of ultrasound therapies such as shock wave lithotripsy and histotripsy, because they attenuate pulses that arrive subsequent to their formation and seed repetitive cavitation activity at a discrete set of sites (cavitation memory). Here, we explore a strategy for the removal of these residual bubbles following a cavitation event, using low-amplitude ultrasound pulses to stimulate bubble coalescence. All experiments were conducted in degassed water and monitored using high-speed photography. In each case, a 2-MHz histotripsy transducer was used to initiate cavitation activity (a cavitational bubble cloud), the collapse of which generated a population of residual bubble nuclei. This residual nuclei population was then sonicated using a 1 ms pulse from a separate 500-kHz transducer, which we term the bubble removal pulse. Bubble removal pulse amplitudes ranging from 0 to 1.7 MPa were tested, and the backlit area of shadow from bubbles remaining in the field following bubble removal was calculated to quantify efficacy. It was found that an ideal amplitude range exists (roughly 180 to 570 kPa) in which bubble removal pulses stimulate the aggregation and subsequent coalescence of residual bubble nuclei, effectively removing them from the field. Further optimization of bubble removal pulse sequences stands to provide an adjunct to cavitation-based ultrasound therapies such as shock wave lithotripsy and histotripsy, mitigating the effects of residual bubble nuclei that currently limit their efficacy.

Tiny Bubbles.

ERIC Educational Resources Information Center

Kim, Hy

1985-01-01

A simple oxygen-collecting device (easily constructed from glass jars and a lid) can show bubbles released by water plants during photosynthesis. Suggestions are given for: (1) testing the collected gas; (2) using various carbon dioxide sources; and (3) measuring respiration. (DH)

An acoustical bubble counter for superheated drop detectors.

PubMed

Taylor, Chris; Montvila, Darius; Flynn, David; Brennan, Christopher; d'Errico, Francesco

2006-01-01

A new bubble counter has been developed based on the well-established approach of detecting vaporization events acoustically in superheated drop detectors (SDDs). This counter is called the Framework Scientific ABC 1260, and it represents a major improvement over prior versions of this technology. By utilizing advanced acoustic pattern recognition software, the bubble formation event can be differentiated from ambient background noise, as well as from other acoustic signatures. Additional structural design enhancements include a relocation of the electronic components to the bottom of the device; thus allowing for greater stability, easier access to vial SDDs without exposure to system electronics. Upgrades in the electronics permit an increase in the speed of bubble detection by almost 50%, compared with earlier versions of the counters. By positioning the vial on top of the device, temperature and sound insulation can be accommodated for extreme environments. Lead shells can also be utilized for an enhanced response to high-energy neutrons.

Yield-stress fluids foams: flow patterns and controlled production in T-junction and flow-focusing devices.

PubMed

Laborie, Benoit; Rouyer, Florence; Angelescu, Dan E; Lorenceau, Elise

2016-11-23

We study the formation of yield-stress fluid foams in millifluidic flow-focusing and T-junction devices. First, we provide a phase diagram for the unsteady operating regimes of bubble production when the gas pressure and the yield-stress fluid flow rate are imposed. Three regimes are identified: a co-flow of gas and yield-stress fluid, a transient production of bubble and a flow of yield-stress fluid only. Taking wall slip into account, we provide a model for the pressure at the onset of bubble formation. Then, we detail and compare two simple methods to ensure steady bubble production: regulation of the gas pressure or flow-rate. These techniques, which are easy to implement, thus open pathways for controlled production of dry yield-stress fluid foams as shown at the end of this article.

Installation and service manual for the U.S. Geological Survey manometers

USGS Publications Warehouse

Craig, James D.

1983-01-01

The purpose of this manual is to describe the installation, operation, and maintenance of the bubble-gage manometers currently (1982) used by the U.S. Geological Survey. Other applications of these devices, such as the long manometer and differential manometer, are discussed, and accessories available for them are described. The bubble gage (water-stage manometer with gas-purge system) described in the Installation and Service Manual, October 1962, has been extensively modified and developed into the STACOM (stabilized and temperature compensated) device. This chapter is the manual for the STACOM unit and an update of the manual for the screw-type bubble gage. A parts list is included for both units.

Analytical and numerical investigations of bubble behavior in electric fields

NASA Astrophysics Data System (ADS)

Vorreiter, Janelle Orae

The behavior of gas bubbles in liquids is important in a wide range of applications. This study is motivated by a desire to understand the motion of bubbles in the absence of gravity, as in many aerospace applications. Phase-change devices, cryogenic tanks and life-support systems are some of the applications where bubbles exist in space environments. One of the main difficulties in employing devices with bubbles in zero gravity environments is the absence of a buoyancy force. The use of an electric field is found to be an effective means of replacing the buoyancy force, improving the control of bubbles in space environments. In this study, analytical and numerical investigations of bubble behavior under the influence of electric fields are performed. The problem is a difficult one in that the physics of the liquid and the electric field need to be considered simultaneously to model the dynamics of the bubble. Simplifications are required to reduce the problem to a tractable form. In this work, for the liquid and the electric field, assumptions are made which reduce the problem to one requiring only the solution of potentials in the domain of interest. Analytical models are developed using a perturbation analysis applicable for small deviations from a spherical shape. Numerical investigations are performed using a boundary integral code. A number of configurations are found to be successful in promoting bubble motion by varying properties of the electric fields. In one configuration, the natural frequencies of a bubble are excited using time-varying electric and pressure fields. The applied electric field is spatially uniform with frequencies corresponding to shape modes of the bubble. The resulting bubble velocity is related to the strength of the electric field as well as the characteristics of the applied fields. In another configuration, static non-uniform fields are used to encourage bubble motion. The resulting motion is related to the degree of non-uniformity of the applied field. Several geometries are investigated to study the relationship between electrode geometry and bubble behavior.

Dual-frequency ultrasound for detecting and sizing bubbles.

PubMed

Buckey, Jay C; Knaus, Darin A; Alvarenga, Donna L; Kenton, Marc A; Magari, Patrick J

2005-01-01

ISS construction and Mars exploration require extensive extravehicular activity (EVA), exposing crewmembers to increased decompression sickness risk. Improved bubble detection technologies could help increase EVA efficiency and safety. Creare Inc. has developed a bubble detection and sizing instrument using dual-frequency ultrasound. The device emits "pump" and "image" signals at two frequencies. The low-frequency pump signal causes an appropriately-sized bubble to resonate. When the image frequency hits a resonating bubble, mixing signals are returned at the sum and difference of the two frequencies. To test the feasibility of transcutaneous intravascular detection, intravascular bubbles in anesthetized swine were produced using agitated saline and decompression stress. Ultrasonic transducers on the chest provided the two frequencies. Mixing signals were detected transthoracically in the right atrium using both methods. A histogram of estimated bubble sizes could be constructed. Bubbles can be detected and sized transthoracically in the right atrium using dual-frequency ultrasound. c2005 Elsevier Ltd. All rights reserved.

Underwater smelling by the star-nosed mole

NASA Astrophysics Data System (ADS)

Lee, Alexander; Spencer, Thomas; Hu, David

2017-11-01

The star-nosed mole can sniff underwater objects by rapidly blowing and inhaling bubbles. How these mammals manipulate bubbles without losing them is poorly understood. In this experimental study, we show that the peculiar shape of the mole's nose can stabilize bubbles. We laser-cut a series of star-shaped plastic templates and measure the largest angle they can be titled before bubbles are released. The arms of the star anchor the bubbles in place by enabling the buoyancy forces between the arms to counter the effects of tilt. Based on this finding, we design and construct a mole-inspired underwater sniffing device that uses oscillation of bubbles to feed a metal oxide chemical sensor, a first step in expanding machine olfaction to underwater applications

Microfluidic Biochip Design

NASA Technical Reports Server (NTRS)

Panzarella, Charles

2004-01-01

As humans prepare for the exploration of our solar system, there is a growing need for miniaturized medical and environmental diagnostic devices for use on spacecrafts, especially during long-duration space missions where size and power requirements are critical. In recent years, the biochip (or Lab-on-a- Chip) has emerged as a technology that might be able to satisfy this need. In generic terms, a biochip is a miniaturized microfluidic device analogous to the electronic microchip that ushered in the digital age. It consists of tiny microfluidic channels, pumps and valves that transport small amounts of sample fluids to biosensors that can perform a variety of tests on those fluids in near real time. It has the obvious advantages of being small, lightweight, requiring less sample fluids and reagents and being more sensitive and efficient than larger devices currently in use. Some of the desired space-based applications would be to provide smaller, more robust devices for analyzing blood, saliva and urine and for testing water and food supplies for the presence of harmful contaminants and microorganisms. Our group has undertaken the goal of adapting as well as improving upon current biochip technology for use in long-duration microgravity environments. In addition to developing computational models of the microfluidic channels, valves and pumps that form the basis of every biochip, we are also trying to identify potential problems that could arise in reduced gravity and develop solutions to these problems. One such problem is due to the prevalence of bubbly sample fluids in microgravity. A bubble trapped in a microfluidic channel could be detrimental to the operation of a biochip. Therefore, the process of bubble formation in microgravity needs to be studied, and a model of this process has been developed and used to understand how bubbles develop and move through biochip components. It is clear that some type of bubble filter would be necessary in Space, and several bubble filter designs are being evaluated.

Measuring helium bubble diameter distributions in tungsten with grazing incidence small angle x-ray scattering (GISAXS)

NASA Astrophysics Data System (ADS)

Thompson, M.; Kluth, P.; Doerner, R. P.; Kirby, N.; Riley, D.; Corr, C. S.

2016-02-01

Grazing incidence small angle x-ray scattering was performed on tungsten samples exposed to helium plasma in the MAGPIE and Pisces-A linear plasma devices to measure the size distributions of resulting helium nano-bubbles. Nano-bubbles were fitted assuming spheroidal particles and an exponential diameter distribution. These particles had mean diameters between 0.36 and 0.62 nm. Pisces-A exposed samples showed more complex patterns, which may suggest the formation of faceted nano-bubbles or nano-scale surface structures.

"Fire Burn and Cauldron Bubble": What Are the Conjunctural Effects on English Teacher Professional Memories, Identities and Narratives?

ERIC Educational Resources Information Center

Tarpey, Paul

2016-01-01

This article explores how circumstances in different conjunctures influence the types of narrative, working practice and "Professional Memory" that English teachers construct. It is argued that the circumstances in which teachers begin their careers help to formulate attitudes, values and missions that remain potent over long periods.…

Release rates of methylcyclohexenone and verbenone from bubble cap and bead releasers under field conditions suitable for the management of bark beetles in California, Oregon, and Alaska.

Treesearch

Edward H. Holsten; Warren Webb; Patrick J. Shea; Richard A. Werner

2002-01-01

Devices releasing antiaggregation pheromones, such as MCH (3-methyl-2-cyclohexen-1-one) and verbenone (4-methylene-6,6-dimethylbicyclo(3.1.1)hept-2-ene), are used experimentally to manipulate destructive populations of bark beetles. Two slow release devices, bubble caps attached to boles of trees and granular beads placed on the ground, were tested in forests of...

Streaming driven by sessile microbubbles: Explaining flow patterns and frequency response

NASA Astrophysics Data System (ADS)

Rallabandi, Bhargav; Wang, Cheng; Guo, Lin; Hilgenfeldt, Sascha

2013-11-01

Ultrasound excitation of bubbles drives powerful steady streaming flows which have found widespread applications in microfluidics, where bubbles are typically of semicircular cross section and attached to walls of the device (sessile). While bubble-driven streaming in bulk fluid is well understood, this practically relevant case presents additional complexity introduced by the wall and contact lines. We develop an asymptotic theory that takes into account the presence of the wall as well as the oscillation dynamics of the bubble, providing a complete description of the streaming flow as a function only of the driving frequency, the bubble size, and the physical properties of the fluid. We show that the coupling between different bubble oscillation modes sustains the experimentally observed streaming flow vortex pattern over a broad range of frequencies, greatly exceeding the widths of individual mode resonances. Above a threshold frequency, we predict, and observe in experiment, reversal of the flow direction. Our analytical theory can be used to guide the design of microfluidic devices, both in situations where robust flow patterns insensitive to parameter changes are desired (e.g. lab-on-a-chip sorters), and in cases where intentional modulation of the flow field appearance is key (e.g. efficient mixers). Current address: Department of Mechanical and Aerospace Engineering, Missouri University of Science and Technology.

Effect of ultrasound on dynamics characteristic of the cavitation bubble in grinding fluids during honing process.

PubMed

Guo, Ce; Zhu, Xijing

2018-03-01

The effect of ultrasound on generating and controlling the cavitation bubble of the grinding fluid during ultrasonic vibration honing was investigated. The grinding fluid on the surface of the honing stone was measured by utilizing the digital microscope VHX-600ESO. Based on analyzing the cavitation mechanism of the grinding fluid, the bubble dynamics model under conventional honing (CH) and ultrasonic vibration honing (UVH) was established respectively. Difference of dynamic behaviors of the bubble between the cases in UVH and CH was compared respectively, and the effects of acoustic amplitude and ultrasonic frequency on the bubble dynamics were simulated numerically using the Runge-Kutta fourth order method with variable step size adaptive control. Finally, the cavitation intensity of grinding fluids under ultrasound was measured quantitatively using acoustimeter. The results showed that the grinding fluid subjected to ultrasound can generate many bubbles and further forms numerous groups of araneose cavitation bubbles on the surface of the honing stone. The oscillation of the bubble under UVH is more intense than the case under CH, and the maximum velocity of the bubble wall under UVH is higher two magnitudes than the case under CH. For lower acoustic amplitude, the dynamic behaviors of the bubble under UVH are similar to that case under CH. As increasing acoustic amplitude, the cavitation intensity of the bubble is growing increased. Honing pressure has an inhabitation effect on cavitation effect of the grinding fluid. The perfect performance of cavitation of the grinding fluid can be obtained when the device of UVH is in the resonance. However, the cavitation intensity of the grinding fluid can be growing weakened with increasing ultrasonic frequency, when the device of UVH is in the off-resonance. The experimental results agree with the theoretical and numerical analysis, which provides a method for exploring applications of the cavitation effect in ultrasonic assisted machining. Copyright © 2017 Elsevier B.V. All rights reserved.

A randomized controlled trial of post-extubation bubble continuous positive airway pressure versus Infant Flow Driver continuous positive airway pressure in preterm infants with respiratory distress syndrome.

PubMed

Gupta, Samir; Sinha, Sunil K; Tin, Win; Donn, Steven M

2009-05-01

To compare the efficacy and safety of bubble continuous positive airway pressure (CPAP) and Infant Flow Driver (IFD) CPAP for the post-extubation management of preterm infants with respiratory distress syndrome (RDS). A total of 140 preterm infants at 24 to 29 weeks' gestation or with a birth weight of 600 to 1500 g who were ventilated at birth for RDS were randomized to receive either IFD CPAP (a variable-flow device) or bubble CPAP (a continuous-flow device). A standardized protocol was used for extubation and CPAP. No crossover was allowed. The primary outcome was successful extubation maintained for at least 72 hours. Secondary outcomes included successful extubation maintained for 7 days, total duration of CPAP support, chronic lung disease, and complications of prematurity. Seventy-one infants were randomized to bubble CPAP, and 69 were randomized to IFD CPAP. Mean gestational age and birth weight were similar in the 2 groups, as were the proportions of infants who achieved successful extubation for 72 hours and for 7 days. However, the median duration of CPAP support was 50% shorter in the infants on bubble CPAP. Moreover, in the subset of infants who were ventilated for less than 14 days, the infants on bubble CPAP had a significantly lower extubation failure rate. There was no difference in the incidence of chronic lung disease or other complications between the 2 study groups. Bubble CPAP is as effective as IFD CPAP in the post-extubation management of infants with RDS; however, in infants ventilated for < or = 14 days, bubble CPAP is associated with a significantly higher rate of successful extubation. Bubble CPAP also is associated with a significantly reduced duration of CPAP support.

Volume Oscillations Delivered to a Lung Model Using 4 Different Bubble CPAP Systems.

PubMed

Poli, Jonathan A; Richardson, C Peter; DiBlasi, Robert M

2015-03-01

High-frequency pressure oscillations created by gas bubbling through an underwater seal during bubble CPAP may enhance ventilation and aid in lung recruitment in premature infants. We hypothesized that there are no differences in the magnitude of oscillations in lung volume (ΔV) in a preterm neonatal lung model when different bubble CPAP systems are used. An anatomically realistic replica of an infant nasal airway model was attached to a Silastic test lung sealed within a calibrated plethysmograph. Nasal prongs were affixed to the simulated neonate and supported using bubble CPAP systems set at 6 cm H2O. ΔV was calculated using pressure measurements obtained from the plethysmograph. The Fisher & Paykel Healthcare bubble CPAP system provided greater ΔV than any of the other devices at all of the respective bias flows (P < .05). The Fisher & Paykel Healthcare and Babi.Plus systems generally provided ΔV at lower frequencies than the other bubble CPAP systems. The magnitude of ΔV increased at bias flows of > 4 L/min in the Fisher & Paykel Healthcare, Airways Development, and homemade systems, but appeared to decrease as bias flow increased with the Babi.Plus system. The major finding of this study is that bubble CPAP can provide measureable ventilation effects in an infant lung model. We speculate that the differences noted in ΔV between the different devices are a combination of the circuit/nasal prong configuration, bubbler configuration, and frequency of oscillations. Additional testing is needed in spontaneously breathing infants to determine whether a physiologic benefit exists when using the different bubble CPAP systems. Copyright © 2015 by Daedalus Enterprises.

Slopes To Prevent Trapping of Bubbles in Microfluidic Channels

NASA Technical Reports Server (NTRS)

Greer, Harold E.; Lee, Michael C.; Smith, J. Anthony; Willis, Peter A.

2010-01-01

The idea of designing a microfluidic channel to slope upward along the direction of flow of the liquid in the channel has been conceived to help prevent trapping of gas bubbles in the channel. In the original application that gave rise to this idea, the microfluidic channels are parts of micro-capillary electrophoresis (microCE) devices undergoing development for use on Mars in detecting compounds indicative of life. It is necessary to prevent trapping of gas bubbles in these devices because uninterrupted liquid pathways are essential for sustaining the electrical conduction and flows that are essential for CE. The idea is also applicable to microfluidic devices that may be developed for similar terrestrial microCE biotechnological applications or other terrestrial applications in which trapping of bubbles in microfluidic channels cannot be tolerated. A typical microCE device in the original application includes, among other things, multiple layers of borosilicate float glass wafers. Microfluidic channels are formed in the wafers, typically by use of wet chemical etching. The figure presents a simplified cross section of part of such a device in which the CE channel is formed in the lowermost wafer (denoted the channel wafer) and, according to the present innovation, slopes upward into a via hole in another wafer (denoted the manifold wafer) lying immediately above the channel wafer. Another feature of the present innovation is that the via hole in the manifold wafer is made to taper to a wider opening at the top to further reduce the tendency to trap bubbles. At the time of reporting the information for this article, an effort to identify an optimum technique for forming the slope and the taper was in progress. Of the techniques considered thus far, the one considered to be most promising is precision milling by use of femtosecond laser pulses. Other similar techniques that may work equally well are precision milling using a focused ion beam, or a small diamond-tipped drill bit.

Generation of Microbubbles with Applications to Industry and Medicine

NASA Astrophysics Data System (ADS)

Rodríguez-Rodríguez, Javier; Sevilla, Alejandro; Martínez-Bazán, Carlos; Gordillo, José Manuel

2015-01-01

We provide a comprehensive and systematic description of the diverse microbubble generation methods recently developed to satisfy emerging technological, pharmaceutical, and medical demands. We first introduce a theoretical framework unifying the physics of bubble formation in the wide variety of existing types of generators. These devices are then classified according to the way the bubbling process is controlled: outer liquid flows (e.g., coflows, cross flows, and flow-focusing flows), acoustic forcing, and electric fields. We also address modern techniques developed to produce bubbles coated with surfactants and liquid shells. The stringent requirements to precisely control the bubbling frequency, the bubble size, and the properties of the coating make microfluidics the natural choice to implement such techniques.

Distributed Micro-Processor Applications to Guidance and Control Systems.

DTIC Science & Technology

1982-07-01

nanoseconds compared with 22 milliseconds for the older type of NMOS non-volatile RAM. This non-volatile RAM is estimated to hold its memory for 100 years...illustrated in figure 1.4.3.3 and compared with the traditional permalog chevron bubble structure. The contiguous element bubble structure is being developed ...M for its 8086 based Digital Advanced Avionics System (DAAS) developed for NASA Ames, but rejected it as being unsuitable. Ada is the new DoD

Bubble production using a Non-Newtonian fluid in microfluidic flow focusing device

NASA Astrophysics Data System (ADS)

Wang, Yi-Lin; Ward, Thomas; Grant, Christine

2012-02-01

We experimentally study the production of micrometer-sized bubbles using microfluidic technology and a flow-focusing geometry. Bubbles are produced by using a mixture containing aqueous polyacrylamide of concentrations ranging from 0.01-0.10% by weight and several solution also containing a sodium-lauryl-sulfate (SLS) surfactant at concentrations ranging 0.01-0.1% by weight. The fluids are driven by controlling the static pressure above a hydrostatic head of the liquid while the disperse phase fluid static pressure is held constant (air). In the absence of surfactant the bubble production is discontinuous. The addition of surfactant stabilizes the bubble production. In each type of experiment, the bubble length l, velocity U and production frequency φ are measured and compared as a function of the inlet pressure ratio. The bubbles exhibit a contraction in their downstream length as a function of the polymer concentration which is investigated.

Gas and Shadow Swing

NASA Astrophysics Data System (ADS)

Tsai, Chi-Hung; Lai, Mei-Yi; Liu, Che-Wei; Huang, Shiang-Yin; Lin, Che-Yu; Yeh, Jeng-Sheng

In our digital art, we design a folding fan as an interactive magic device. You can use it to play with gas around the world of illusions. Although gas could not be seen in our real world, we still want to interact with it in our illusions by the element of bubble shadows. Opening and swinging the folding fan can blow the bubble shadows away; closing and swinging it can break bubbles. If the magic fan touches the shadow of gas, the bubble shadows will explode and release colorful particles to surround you. Those actions are controlled and located by our circuits with Arduino board.

A bubble detection system for propellant filling pipeline

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wen, Wen; Zong, Guanghua; Bi, Shusheng

2014-06-15

This paper proposes a bubble detection system based on the ultrasound transmission method, mainly for probing high-speed bubbles in the satellite propellant filling pipeline. First, three common ultrasonic detection methods are compared and the ultrasound transmission method is used in this paper. Then, the ultrasound beam in a vertical pipe is investigated, suggesting that the width of the beam used for detection is usually smaller than the internal diameter of the pipe, which means that when bubbles move close to the pipe wall, they may escape from being detected. A special device is designed to solve this problem. It canmore » generate the spiral flow to force all the bubbles to ascend along the central line of the pipe. In the end, experiments are implemented to evaluate the performance of this system. Bubbles of five different sizes are generated and detected. Experiment results show that the sizes and quantity of bubbles can be estimated by this system. Also, the bubbles of different radii can be distinguished from each other. The numerical relationship between the ultrasound attenuation and the bubble radius is acquired and it can be utilized for estimating the unknown bubble size and measuring the total bubble volume.« less

Monitoring and analyzing waste glass compositions

DOEpatents

Schumacher, R.F.

1994-03-01

A device and method are described for determining the viscosity of a fluid, preferably molten glass. The apparatus and method use the velocity of rising bubbles, preferably helium bubbles, within the molten glass to determine the viscosity of the molten glass. The bubbles are released from a tube positioned below the surface of the molten glass so that the bubbles pass successively between two sets of electrodes, one above the other, that are continuously monitoring the conductivity of the molten glass. The measured conductivity will change as a bubble passes between the electrodes enabling an accurate determination of when a bubble has passed between the electrodes. The velocity of rising bubbles can be determined from the time interval between a change in conductivity of the first electrode pair and the second, upper electrode pair. The velocity of the rise of the bubbles in the glass melt is used in conjunction with other physical characteristics, obtained by known methods, to determine the viscosity of the glass melt fluid and, hence, glass quality. 2 figures.

Monitoring and analyzing waste glass compositions

DOEpatents

Schumacher, Ray F.

1994-01-01

A device and method for determining the viscosity of a fluid, preferably molten glass. The apparatus and method uses the velocity of rising bubbles, preferably helium bubbles, within the molten glass to determine the viscosity of the molten glass. The bubbles are released from a tube positioned below the surface of the molten glass so that the bubbles pass successively between two sets of electrodes, one above the other, that are continuously monitoring the conductivity of the molten glass. The measured conductivity will change as a bubble passes between the electrodes enabling an accurate determination of when a bubble has passed between the electrodes. The velocity of rising bubbles can be determined from the time interval between a change in conductivity of the first electrode pair and the second, upper electrode pair. The velocity of the rise of the bubbles in the glass melt is used in conjunction with other physical characteristics, obtained by known methods, to determine the viscosity of the glass melt fluid and, hence, glass quality.

Rigorous buoyancy driven bubble mixing for centrifugal microfluidics.

PubMed

Burger, S; Schulz, M; von Stetten, F; Zengerle, R; Paust, N

2016-01-21

We present batch-mode mixing for centrifugal microfluidics operated at fixed rotational frequency. Gas is generated by the disk integrated decomposition of hydrogen peroxide (H2O2) to liquid water (H2O) and gaseous oxygen (O2) and inserted into a mixing chamber. There, bubbles are formed that ascent through the liquid in the artificial gravity field and lead to drag flow. Additionaly, strong buoyancy causes deformation and rupture of the gas bubbles and induces strong mixing flows in the liquids. Buoyancy driven bubble mixing is quantitatively compared to shake mode mixing, mixing by reciprocation and vortex mixing. To determine mixing efficiencies in a meaningful way, the different mixers are employed for mixing of a lysis reagent and human whole blood. Subsequently, DNA is extracted from the lysate and the amount of DNA recovered is taken as a measure for mixing efficiency. Relative to standard vortex mixing, DNA extraction based on buoyancy driven bubble mixing resulted in yields of 92 ± 8% (100 s mixing time) and 100 ± 8% (600 s) at 130g centrifugal acceleration. Shake mode mixing yields 96 ± 11% and is thus equal to buoyancy driven bubble mixing. An advantage of buoyancy driven bubble mixing is that it can be operated at fixed rotational frequency, however. The additional costs of implementing buoyancy driven bubble mixing are low since both the activation liquid and the catalyst are very low cost and no external means are required in the processing device. Furthermore, buoyancy driven bubble mixing can easily be integrated in a monolithic manner and is compatible to scalable manufacturing technologies such as injection moulding or thermoforming. We consider buoyancy driven bubble mixing an excellent alternative to shake mode mixing, in particular if the processing device is not capable of providing fast changes of rotational frequency or if the low average rotational frequency is challenging for the other integrated fluidic operations.

Liquid/Gas Flow Mixers

NASA Technical Reports Server (NTRS)

Fabris, Gracio

1994-01-01

Improved devices mix gases and liquids into bubbly or foamy flows. Generates flowing, homogeneous foams or homogeneous dispersions of small, noncoalescing bubbles entrained in flowing liquids. Mixers useful in liquid-metal magnetohydrodynamic electric-power generator, froth flotation in mining industry, wastewater treatment, aerobic digestion, and stripping hydrocarbon contaminants from ground water.

Room-Temperature Creation and Spin–Orbit Torque Manipulation of Skyrmions in Thin Films with Engineered Asymmetry

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yu, Guoqiang; Upadhyaya, Pramey; Li, Xiang

2016-03-09

Magnetic skyrmions, which are topologically protected spin textures, are promising candidates for ultralow-energy and ultrahigh-density magnetic data storage and computing applications. To date, most experiments on skyrmions have been carried out at low temperatures. The choice of available materials is limited, and there is a lack of electrical means to control skyrmions in devices. In this work, we demonstrate a new method for creating a stable skyrmion bubble phase in the CoFeB–MgO material system at room temperature, by engineering the interfacial perpendicular magnetic anisotropy of the ferromagnetic layer. Importantly, we also demonstrate that artificially engineered symmetry breaking gives rise tomore » a force acting on the skyrmions, in addition to the current-induced spin–orbit torque, which can be used to drive their motion. This room-temperature creation and manipulation of skyrmions offers new possibilities to engineer skyrmionic devices. The results bring skyrmionic memory and logic concepts closer to realization in industrially relevant and manufacturable thin film material systems.« less

Room-Temperature Creation and Spin–Orbit Torque Manipulation of Skyrmions in Thin Films with Engineered Asymmetry

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yu, Guoqiang; Upadhyaya, Pramey; Li, Xiang

2016-02-10

Magnetic skyrmions, which are topologically protected spin textures, are promising candidates for ultralow-energy and ultrahigh-density magnetic data storage and computing applications. To date, most experiments on skyrmions have been carried out at low temperatures. The choice of available materials is limited, and there is a lack of electrical means to control skyrmions in devices. In this work, we demonstrate a new method for creating a stable skyrmion bubble phase in the CoFeB–MgO material system at room temperature, by engineering the interfacial perpendicular magnetic anisotropy of the ferromagnetic layer. Importantly, we also demonstrate that artificially engineered symmetry breaking gives rise tomore » a force acting on the skyrmions, in addition to the current-induced spin–orbit torque, which can be used to drive their motion. This room-temperature creation and manipulation of skyrmions offers new possibilities to engineer skyrmionic devices. The results bring skyrmionic memory and logic concepts closer to realization in industrially relevant and manufacturable thin film material systems.« less

Liquid oxygen liquid acquisition device bubble point tests with high pressure lox at elevated temperatures

NASA Astrophysics Data System (ADS)

Jurns, J. M.; Hartwig, J. W.

2012-04-01

When transferring propellant in space, it is most efficient to transfer single phase liquid from a propellant tank to an engine. In earth's gravity field or under acceleration, propellant transfer is fairly simple. However, in low gravity, withdrawing single-phase fluid becomes a challenge. A variety of propellant management devices (PMDs) are used to ensure single-phase flow. One type of PMD, a liquid acquisition device (LAD) takes advantage of capillary flow and surface tension to acquire liquid. The present work reports on testing with liquid oxygen (LOX) at elevated pressures (and thus temperatures) (maximum pressure 1724 kPa and maximum temperature 122 K) as part of NASA's continuing cryogenic LAD development program. These tests evaluate LAD performance for LOX stored in higher pressure vessels that may be used in propellant systems using pressure fed engines. Test data shows a significant drop in LAD bubble point values at higher liquid temperatures, consistent with lower liquid surface tension at those temperatures. Test data also indicates that there are no first order effects of helium solubility in LOX on LAD bubble point prediction. Test results here extend the range of data for LOX fluid conditions, and provide insight into factors affecting predicting LAD bubble point pressures.

Liquid Oxygen Liquid Acquisition Device Bubble Point Tests with High Pressure LOX at Elevated Temperatures

NASA Technical Reports Server (NTRS)

Jurns, John M.; Hartwig, Jason W.

2011-01-01

When transferring propellant in space, it is most efficient to transfer single phase liquid from a propellant tank to an engine. In earth s gravity field or under acceleration, propellant transfer is fairly simple. However, in low gravity, withdrawing single-phase fluid becomes a challenge. A variety of propellant management devices (PMD) are used to ensure single-phase flow. One type of PMD, a liquid acquisition device (LAD) takes advantage of capillary flow and surface tension to acquire liquid. The present work reports on testing with liquid oxygen (LOX) at elevated pressures (and thus temperatures) (maximum pressure 1724 kPa and maximum temperature 122K) as part of NASA s continuing cryogenic LAD development program. These tests evaluate LAD performance for LOX stored in higher pressure vessels that may be used in propellant systems using pressure fed engines. Test data shows a significant drop in LAD bubble point values at higher liquid temperatures, consistent with lower liquid surface tension at those temperatures. Test data also indicates that there are no first order effects of helium solubility in LOX on LAD bubble point prediction. Test results here extend the range of data for LOX fluid conditions, and provide insight into factors affecting predicting LAD bubble point pressures.

Bubble Transport through Micropillar Arrays

NASA Astrophysics Data System (ADS)

Lee, Kenneth; Savas, Omer

2012-11-01

In current energy research, artificial photosynthetic devices are being designed to split water and harvest hydrogen gas using energy from the sun. In one such design, hydrogen gas bubbles evolve on the catalytic surfaces of arrayed micropillars. If these bubbles are not promptly removed from the surface, they can adversely affect gas evolution rates, water flow rates, sunlight capture, and heat management of the system. Therefore, an efficient method of collecting the evolved gas bubbles is crucial. Preliminary flow visualization has been conducted of bubbles advecting through dense arrays of pillars. Bubbles moving through square and hexagonal arrays are tracked, and the results are qualitatively described. Initial attempts to correlate bubble motion with relevant lengthscales and forces are also presented. These observations suggest how bubble transport within such pillar arrays can be managed, as well as guide subsequent experiments that investigate bubble evolution and collection. This material is based upon work performed by the Joint Center for Artificial Photosynthesis, a DOE Energy Innovation Hub, supported through the Office of Science of the U.S. Department of Energy under Award Number DE-SC0004993.

Systematic Prevention of Bubble Formation and Accumulation for Long-Term Culture of Pancreatic Islet Cells in Microfluidic Device

PubMed Central

Wang, Yong; Lee, Dongyoung; Zhang, Lisa; Jeon, Hyojin; Mendoza-Elias, Joshua E.; Harvat, Tricia A.; Hassan, Sarah Z.; Zhou, Amanda; Eddington, David T.; Oberholzer, José

2012-01-01

Reliable long-term cell culture in microfluidic system is limited by air bubble formation and accumulation. In this study, we developed a bubble removal system capable of both trapping and discharging air bubbles in a consistent and reliable manner. Combined with PDMS (Polydimethylsiloxane) hydrophilic surface treatment and vacuum filling, a microfluidic perifusion system equipped with the bubble trap was successfully applied for long-term culture of mouse pancreatic islets with no bubble formation and no flow interruption. In addition to demonstrating normal cell viability and islet morphology, post-cultured islets exhibited normal insulin secretion kinetics, intracellular calcium signaling, and changes in mitochondrial potentials in response to glucose challenge. This design could be easily adapted by other microfluidic systems due to its simple design, ease of fabrication, and portability. PMID:22252566

Low latency and persistent data storage

DOEpatents

Fitch, Blake G; Franceschini, Michele M; Jagmohan, Ashish; Takken, Todd E

2014-02-18

Persistent data storage is provided by a method that includes receiving a low latency store command that includes write data. The write data is written to a first memory device that is implemented by a nonvolatile solid-state memory technology characterized by a first access speed. It is acknowledged that the write data has been successfully written to the first memory device. The write data is written to a second memory device that is implemented by a volatile memory technology. At least a portion of the data in the first memory device is written to a third memory device when a predetermined amount of data has been accumulated in the first memory device. The third memory device is implemented by a nonvolatile solid-state memory technology characterized by a second access speed that is slower than the first access speed.

Glass for Solid State Devices

NASA Technical Reports Server (NTRS)

Bailey, R. F.

1982-01-01

Glass film has low intrinsic compressive stress for isolating active layers of magnetic-bubble and other solid-state devices. Solid-state device structure incorporates low-stress glasses as barrier and spacer layers. Glass layers mechanically isolate substrate, conductor, and nickel/iron layers.

Oscillating microbubbles for selective particle sorting in acoustic microfluidic devices

NASA Astrophysics Data System (ADS)

Rogers, Priscilla; Xu, Lin; Neild, Adrian

2012-05-01

In this study, acoustic waves were used to excite a microbubble for selective particle trapping and sorting. Excitation of the bubble at its volume resonance, as necessary to drive strong fluid microstreaming, resulted in the particles being either selectively attracted to the bubble or continuing to follow the local microstreamlines. The operating principle exploited two acoustic phenomena acting on the particle suspension: the drag force arising from the acoustic microstreaming and the secondary Bjerknes force, i.e. the attractive radiation force produced between an oscillating bubble and a non-buoyant particle. It was also found that standing wave fields within the fluid chamber could be used to globally align bubbles and particles for local particle sorting by the bubble.

CVB: The Constrained Vapor Bubble 40 mm Capillary Experiment on the ISS

NASA Technical Reports Server (NTRS)

Wayner, Peter C., Jr.; Kundan, Akshay; Plawsky, Joel

2013-01-01

Discuss the Constrained Vapor Bubble (CVB) 40mm Fin experiment on the ISS and how it aims to achieve a better understanding of the physics of evaporation and condensation and how they affect cooling processes in microgravity using a remotely controlled microscope and a small cooling device

Attention and Memory for Faces and Actions in Infancy: The Salience of Actions over Faces in Dynamic Events.

ERIC Educational Resources Information Center

Bahrick, Lorraine E.; Gogate, Lakshmi J.; Ruiz, Ivonne

2002-01-01

Three experiments investigated discrimination and memory of 5.5-month-olds for videotapes of women performing different activities (blowing bubbles, brushing hair, brushing teeth) or static displays after a 1-minute and a 7-week delay. Findings demonstrate the attentional salience of actions over faces in dynamic events to 5.5-month-olds. Findings…

Nasal Jet-CPAP (variable flow) versus Bubble-CPAP in preterm infants with respiratory distress: an open label, randomized controlled trial.

PubMed

Bhatti, A; Khan, J; Murki, S; Sundaram, V; Saini, S S; Kumar, P

2015-11-01

To compare the failure rates between Jet continuous positive airway pressure device (J-CPAP-variable flow) and Bubble continuous positive airway device (B-CPAP) in preterm infants with respiratory distress. Preterm newborns <34 weeks gestation with onset of respiratory distress within 6 h of life were randomized to receive J-CPAP (a variable flow device) or B-CPAP (continuous flow device). A standardized protocol was followed for titration, weaning and removal of CPAP. Pressure was monitored close to the nares in both the devices every 6 hours and settings were adjusted to provide desired CPAP. The primary outcome was CPAP failure rate within 72 h of life. Secondary outcomes were CPAP failure within 7 days of life, need for surfactant post-randomization, time to CPAP failure, duration of CPAP and complications of prematurity. An intention to treat analysis was done. One-hundred seventy neonates were randomized, 80 to J-CPAP and 90 to B-CPAP. CPAP failure rates within 72 h were similar in infants who received J-CPAP and in those who received B-CPAP (29 versus 21%; relative risks 1.4 (0.8 to 2.3), P=0.25). Mean (95% confidence intervals) time to CPAP failure was 59 h (54 to 64) in the Jet CPAP group in comparison with 65 h (62 to 68) in the Bubble CPAP group (log rank P=0.19). All other secondary outcomes were similar between the two groups. In preterm infants with respiratory distress starting within 6 h of life, CPAP failure rates were similar with Jet CPAP and Bubble CPAP.

Low latency and persistent data storage

DOEpatents

Fitch, Blake G; Franceschini, Michele M; Jagmohan, Ashish; Takken, Todd

2014-11-04

Persistent data storage is provided by a computer program product that includes computer program code configured for receiving a low latency store command that includes write data. The write data is written to a first memory device that is implemented by a nonvolatile solid-state memory technology characterized by a first access speed. It is acknowledged that the write data has been successfully written to the first memory device. The write data is written to a second memory device that is implemented by a volatile memory technology. At least a portion of the data in the first memory device is written to a third memory device when a predetermined amount of data has been accumulated in the first memory device. The third memory device is implemented by a nonvolatile solid-state memory technology characterized by a second access speed that is slower than the first access speed.

Safety devices for neonatal intensive care.

PubMed

Neuman, M R; Flammer, C M; O'Connor, E

1982-01-01

Three relatively simple devices for improving safety in neonatal intensive care are described. When umbilical artery catheters are used, an inexpensive pressure switch is utilized to detect abnormally low pressures associated with catheter withdrawal or excessive fluid leakage from the catheter system. A capacitive, intravenous-line air bubble detector, consisting of a section of the intravenous line as the dielectric of a capacitor, is used to alert the clinical staff when air bubbles pass between the capacitor plates. An electronic temperature controller maintains the temperature of neonatal breathing gases to avoid temperature variations which occur with presently used techniques. These are relatively simple and inexpensive devices which can be fabricated by most hospital clinical engineering services.

21 CFR 868.2025 - Ultrasonic air embolism monitor.

Code of Federal Regulations, 2013 CFR

2013-04-01

... 21 Food and Drugs 8 2013-04-01 2013-04-01 false Ultrasonic air embolism monitor. 868.2025 Section... (CONTINUED) MEDICAL DEVICES ANESTHESIOLOGY DEVICES Monitoring Devices § 868.2025 Ultrasonic air embolism monitor. (a) Identification. An ultrasonic air embolism monitor is a device used to detect air bubbles in...

21 CFR 868.2025 - Ultrasonic air embolism monitor.

Code of Federal Regulations, 2011 CFR

2011-04-01

... 21 Food and Drugs 8 2011-04-01 2011-04-01 false Ultrasonic air embolism monitor. 868.2025 Section... (CONTINUED) MEDICAL DEVICES ANESTHESIOLOGY DEVICES Monitoring Devices § 868.2025 Ultrasonic air embolism monitor. (a) Identification. An ultrasonic air embolism monitor is a device used to detect air bubbles in...

21 CFR 868.2025 - Ultrasonic air embolism monitor.

Code of Federal Regulations, 2010 CFR

2010-04-01

... 21 Food and Drugs 8 2010-04-01 2010-04-01 false Ultrasonic air embolism monitor. 868.2025 Section... (CONTINUED) MEDICAL DEVICES ANESTHESIOLOGY DEVICES Monitoring Devices § 868.2025 Ultrasonic air embolism monitor. (a) Identification. An ultrasonic air embolism monitor is a device used to detect air bubbles in...

Displacement of particles in microfluidics by laser-generated tandem bubbles

NASA Astrophysics Data System (ADS)

Lautz, Jaclyn; Sankin, Georgy; Yuan, Fang; Zhong, Pei

2010-11-01

The dynamic interaction between laser-generated tandem bubble and individual polystyrene particles of 2 and 10 μm in diameter is studied in a microfluidic channel (25 μm height) by high-speed imaging and particle image velocimetry. The asymmetric collapse of the tandem bubble produces a pair of microjets and associated long-lasting vortices that can propel a single particle to a maximum velocity of 1.4 m/s in 30 μs after the bubble collapse with a resultant directional displacement up to 60 μm in 150 μs. This method may be useful for high-throughput cell sorting in microfluidic devices.

An experimental investigation of hydrodynamic cavitation in micro-Venturis

NASA Astrophysics Data System (ADS)

Mishra, Chandan; Peles, Yoav

2006-10-01

The existence of hydrodynamic cavitation in the flow of de-ionized water through micro-Venturis has been witnessed in the form of traveling bubble cavitation and fully developed streamer bubble/supercavitation, and their mechanisms have been discussed. High-speed photography and flow visualization disclose inchoate cavitation bubbles emerging downstream from the micro-Venturi throat and the presence of a single streamer bubble/supercavity, which is equidistant from the micro device walls. The supercavity initiates inside the diffuser section and extends until the microchannel exit and proceeds to bifurcate the incoming flow. This article strives to provide numerical data and experimental details of hydrodynamic cavitation taking place within micro-Venturis.

System and method for programmable bank selection for banked memory subsystems

DOEpatents

Blumrich, Matthias A.; Chen, Dong; Gara, Alan G.; Giampapa, Mark E.; Hoenicke, Dirk; Ohmacht, Martin; Salapura, Valentina; Sugavanam, Krishnan

2010-09-07

A programmable memory system and method for enabling one or more processor devices access to shared memory in a computing environment, the shared memory including one or more memory storage structures having addressable locations for storing data. The system comprises: one or more first logic devices associated with a respective one or more processor devices, each first logic device for receiving physical memory address signals and programmable for generating a respective memory storage structure select signal upon receipt of pre-determined address bit values at selected physical memory address bit locations; and, a second logic device responsive to each of the respective select signal for generating an address signal used for selecting a memory storage structure for processor access. The system thus enables each processor device of a computing environment memory storage access distributed across the one or more memory storage structures.

Curvature-driven bubbles or droplets on the spiral surface

NASA Astrophysics Data System (ADS)

Li, Shanpeng; Liu, Jianlin; Hou, Jian

2016-11-01

Directional motion of droplets or bubbles can often be observed in nature and our daily life, and this phenomenon holds great potential in many engineering areas. The study shows that droplets or bubbles can be driven to migrate perpetually on some special substrates, such as the Archimedean spiral, the logarithmic spiral and a cantilever sheet in large deflection. It is found that a bubble approaches or deviates from the position with highest curvature of the substrate, when it is on the concave or convex side. This fact is helpful to explain the repelling water capability of Nepenthes alata. Based on the force and energy analysis, the mechanism of the bubble migration is well addressed. These findings pave a new way to accurately manipulate droplet or bubble movement, which bring inspirations to the design of microfluidic and water harvesting devices, as well as oil displacement and ore filtration.

PDMS free-flow electrophoresis chips with integrated partitioning bars for bubble segregation.

PubMed

Köhler, Stefan; Weilbeer, Claudia; Howitz, Steffen; Becker, Holger; Beushausen, Volker; Belder, Detlev

2011-01-21

In this work, a microfluidic free-flow electrophoresis device with a novel approach for preventing gas bubbles from entering the separation area is presented. This is achieved by integrating partitioning bars to reduce the channel depth between electrode channels and separation chamber in order to obtain electrical contact and simultaneously prevent bubbles from entering the separation area. The three-layer sandwich chip features a reusable carrier plate with integrated ports for fluidic connection combined with a softlithographically cast microfluidic PDMS layer and a sealing glass slide. This design allows for a straightforward and rapid chip prototyping process. The performance of the device is demonstrated by free-flow zone electrophoretic separations of fluorescent dye mixtures as well as by the separation of labeled amines and amino acids with separation voltages up to 297 V.

Localized removal of layers of metal, polymer, or biomaterial by ultrasound cavitation bubbles

PubMed Central

Fernandez Rivas, David; Verhaagen, Bram; Seddon, James R. T.; Zijlstra, Aaldert G.; Jiang, Lei-Meng; van der Sluis, Luc W. M.; Versluis, Michel; Lohse, Detlef; Gardeniers, Han J. G. E.

2012-01-01

We present an ultrasonic device with the ability to locally remove deposited layers from a glass slide in a controlled and rapid manner. The cleaning takes place as the result of cavitating bubbles near the deposited layers and not due to acoustic streaming. The bubbles are ejected from air-filled cavities micromachined in a silicon surface, which, when vibrated ultrasonically at a frequency of 200 kHz, generate a stream of bubbles that travel to the layer deposited on an opposing glass slide. Depending on the pressure amplitude, the bubble clouds ejected from the micropits attain different shapes as a result of complex bubble interaction forces, leading to distinct shapes of the cleaned areas. We have determined the removal rates for several inorganic and organic materials and obtained an improved efficiency in cleaning when compared to conventional cleaning equipment. We also provide values of the force the bubbles are able to exert on an atomic force microscope tip. PMID:23964308

Trapping, focusing, and sorting of microparticles through bubble streaming

NASA Astrophysics Data System (ADS)

Wang, Cheng; Jalikop, Shreyas; Hilgenfeldt, Sascha

2010-11-01

Ultrasound-driven oscillating microbubbles can set up vigorous steady streaming flows around the bubbles. In contrast to previous work, we make use of the interaction between the bubble streaming and the streaming induced around mobile particles close to the bubble. Our experiment superimposes a unidirectional Poiseuille flow containing a well-mixed suspension of neutrally buoyant particles with the bubble streaming. The particle-size dependence of the particle-bubble interaction selects which particles are transported and which particles are trapped near the bubbles. The sizes selected for can be far smaller than any scale imposed by the device geometry, and the selection mechanism is purely passive. Changing the amplitude and frequency of ultrasound driving, we can further control focusing and sorting of the trapped particles, leading to the emergence of sharply defined monodisperse particle streams within a much wider channel. Optimizing parameters for focusing and sorting are presented. The technique is applicable in important fields like cell sorting and drug delivery.

Bubble propagation on a rail: a concept for sorting bubbles by size

NASA Astrophysics Data System (ADS)

Franco-Gómez, Andrés; Thompson, Alice B.; Hazel, Andrew L.; Juel, Anne

We demonstrate experimentally that the introduction of a rail, a small height constriction, within the cross-section of a rectangular channel could be used as a robust passive sorting device in two-phase fluid flows. Single air bubbles carried within silicone oil are generally transported on one side of the rail. However, for flow rates marginally larger than a critical value, a narrow band of bubble sizes can propagate (stably) over the rail, while bubbles of other sizes segregate to the side of the rail. The width of this band of bubble sizes increases with flow rate and the size of the most stable bubble can be tuned by varying the rail width. We present a complementary theoretical analysis based on a depth-averaged theory, which is in qualitative agreement with the experiments. The theoretical study reveals that the mechanism relies on a non-trivial interaction between capillary and viscous forces that is fully dynamic, rather than being a simple modification of capillary static solutions.

Accessing global data from accelerator devices

DOEpatents

Bertolli, Carlo; O'Brien, John K.; Sallenave, Olivier H.; Sura, Zehra N.

2016-12-06

An aspect includes a table of contents (TOC) that was generated by a compiler being received at an accelerator device. The TOC includes an address of global data in a host memory space. The global data is copied from the address in the host memory space to an address in the device memory space. The address in the host memory space is obtained from the received TOC. The received TOC is updated to indicate that global data is stored at the address in the device memory space. A kernel that accesses the global data from the address in the device memory space is executed. The address in the device memory space is obtained based on contents of the updated TOC. When the executing is completed, the global data from the address in the device memory space is copied to the address in the host memory space.

Application of phase-change materials in memory taxonomy.

PubMed

Wang, Lei; Tu, Liang; Wen, Jing

2017-01-01

Phase-change materials are suitable for data storage because they exhibit reversible transitions between crystalline and amorphous states that have distinguishable electrical and optical properties. Consequently, these materials find applications in diverse memory devices ranging from conventional optical discs to emerging nanophotonic devices. Current research efforts are mostly devoted to phase-change random access memory, whereas the applications of phase-change materials in other types of memory devices are rarely reported. Here we review the physical principles of phase-change materials and devices aiming to help researchers understand the concept of phase-change memory. We classify phase-change memory devices into phase-change optical disc, phase-change scanning probe memory, phase-change random access memory, and phase-change nanophotonic device, according to their locations in memory hierarchy. For each device type we discuss the physical principles in conjunction with merits and weakness for data storage applications. We also outline state-of-the-art technologies and future prospects.

An UV photochromic memory effect in proton-based WO3 electrochromic devices

NASA Astrophysics Data System (ADS)

Zhang, Yong; Lee, S.-H.; Mascarenhas, A.; Deb, S. K.

2008-11-01

We report an UV photochromic memory effect on a standard proton-based WO3 electrochromic device. It exhibits two memory states, associated with the colored and bleached states of the device, respectively. Such an effect can be used to enhance device performance (increasing the dynamic range), re-energize commercial electrochromic devices, and develop memory devices.

High Precision Pressure Measurement with a Funnel

ERIC Educational Resources Information Center

Lopez-Arias, T.; Gratton, L. M.; Oss, S.

2008-01-01

A simple experimental device for high precision differential pressure measurements is presented. Its working mechanism recalls that of a hydraulic press, where pressure is supplied by insufflating air under a funnel. As an application, we measure air pressure inside a soap bubble. The soap bubble is inflated and connected to a funnel which is…

Liquid Acquisition Device Design Sensitivity Study

NASA Technical Reports Server (NTRS)

VanDyke, M. K.; Hastings, L. J.

2012-01-01

In-space propulsion often necessitates the use of a capillary liquid acquisition device (LAD) to assure that gas-free liquid propellant is available to support engine restarts in microgravity. If a capillary screen-channel device is chosen, then the designer must determine the appropriate combination screen mesh and channel geometry. A screen mesh selection which results in the smallest LAD width when compared to any other screen candidate (for a constant length) is desirable; however, no best screen exists for all LAD design requirements. Flow rate, percent fill, and acceleration are the most influential drivers for determining screen widths. Increased flow rates and reduced percent fills increase the through-the-screen flow pressure losses, which drive the LAD to increased widths regardless of screen choice. Similarly, increased acceleration levels and corresponding liquid head pressures drive the screen mesh selection toward a higher bubble point (liquid retention capability). After ruling out some screens on the basis of acceleration requirements alone, candidates can be identified by examining screens with small flow-loss-to-bubble point ratios for a given condition (i.e., comparing screens at certain flow rates and fill levels). Within the same flow rate and fill level, the screen constants inertia resistance coefficient, void fraction, screen pore or opening diameter, and bubble point can become the driving forces in identifying the smaller flow-loss-to-bubble point ratios.

System for simultaneously loading program to master computer memory devices and corresponding slave computer memory devices

NASA Technical Reports Server (NTRS)

Hall, William A. (Inventor)

1993-01-01

A bus programmable slave module card for use in a computer control system is disclosed which comprises a master computer and one or more slave computer modules interfacing by means of a bus. Each slave module includes its own microprocessor, memory, and control program for acting as a single loop controller. The slave card includes a plurality of memory means (S1, S2...) corresponding to a like plurality of memory devices (C1, C2...) in the master computer, for each slave memory means its own communication lines connectable through the bus with memory communication lines of an associated memory device in the master computer, and a one-way electronic door which is switchable to either a closed condition or a one-way open condition. With the door closed, communication lines between master computer memory (C1, C2...) and slave memory (S1, S2...) are blocked. In the one-way open condition invention, the memory communication lines or each slave memory means (S1, S2...) connect with the memory communication lines of its associated memory device (C1, C2...) in the master computer, and the memory devices (C1, C2...) of the master computer and slave card are electrically parallel such that information seen by the master's memory is also seen by the slave's memory. The slave card is also connectable to a switch for electronically removing the slave microprocessor from the system. With the master computer and the slave card in programming mode relationship, and the slave microprocessor electronically removed from the system, loading a program in the memory devices (C1, C2...) of the master accomplishes a parallel loading into the memory devices (S1, S2...) of the slave.

Molecular dynamics modeling of helium bubbles in austenitic steels

NASA Astrophysics Data System (ADS)

Jelea, A.

2018-06-01

The austenitic steel devices from pressurized water reactors are continuously subjected to neutron irradiation that produces crystalline point defects and helium atoms in the steel matrix. These species evolve into large defects such as dislocation loops and helium filled bubbles. This paper analyzes, through molecular dynamics simulations with recently developed interatomic potentials, the impact of the helium/steel interface on the helium behavior in nanosize bubbles trapped in an austenitic steel matrix. It is shown that the repulsive helium-steel interactions induce higher pressures in the bubble compared to bulk helium at the same temperature and average density. A new equation of state for helium is proposed in order to take into account these interface effects.

Sharp Interface Tracking in Rotating Microflows of Solvent Extraction

DOE Office of Scientific and Technical Information (OSTI.GOV)

Glimm, James; Almeida, Valmor de; Jiao, Xiangmin

2013-01-08

The objective of this project is to develop a specialized sharp interface tracking simulation capability for predicting interaction of micron-sized drops and bubbles in rotating flows relevant to optimized design of contactor devices used in solvent extraction processes of spent nuclear fuel reprocessing. The primary outcomes of this project include the capability to resolve drops and bubbles micro-hydrodynamics in solvent extraction contactors, determining from first principles continuum fluid mechanics how micro-drops and bubbles interact with each other and the surrounding shearing fluid for realistic flows. In the near term, this effort will play a central role in providing parameters andmore » insight into the flow dynamics of models that average over coarser scales, say at the millimeter unit length. In the longer term, it will prove to be the platform to conduct full-device, detailed simulations as parallel computing power reaches the exaflop level. The team will develop an accurate simulation tool for flows containing interacting droplets and bubbles with sharp interfaces under conditions that mimic those found in realistic contactor operations. The main objective is to create an off-line simulation capability to model drop and bubble interactions in a domain representative of the averaged length scale. The technical approach is to combine robust interface tracking software, subgrid modeling, validation quality experiments, powerful computational hardware, and a team with simulation modeling, physical modeling and technology integration experience. Simulations will then fully resolve the microflow of drops and bubbles at the microsecond time scale. This approach is computationally intensive but very accurate in treating important coupled physical phenomena in the vicinity of interfaces. The method makes it possible to resolve spatial scales smaller than the typical distance between bubbles and to model some non-equilibrium thermodynamic features such as finite critical tension in cavitating liquids« less

Application of phase-change materials in memory taxonomy

PubMed Central

Wang, Lei; Tu, Liang; Wen, Jing

2017-01-01

Abstract Phase-change materials are suitable for data storage because they exhibit reversible transitions between crystalline and amorphous states that have distinguishable electrical and optical properties. Consequently, these materials find applications in diverse memory devices ranging from conventional optical discs to emerging nanophotonic devices. Current research efforts are mostly devoted to phase-change random access memory, whereas the applications of phase-change materials in other types of memory devices are rarely reported. Here we review the physical principles of phase-change materials and devices aiming to help researchers understand the concept of phase-change memory. We classify phase-change memory devices into phase-change optical disc, phase-change scanning probe memory, phase-change random access memory, and phase-change nanophotonic device, according to their locations in memory hierarchy. For each device type we discuss the physical principles in conjunction with merits and weakness for data storage applications. We also outline state-of-the-art technologies and future prospects. PMID:28740557

Accessing global data from accelerator devices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bertolli, Carlo; O'Brien, John K.; Sallenave, Olivier H.

2016-12-06

An aspect includes a table of contents (TOC) that was generated by a compiler being received at an accelerator device. The TOC includes an address of global data in a host memory space. The global data is copied from the address in the host memory space to an address in the device memory space. The address in the host memory space is obtained from the received TOC. The received TOC is updated to indicate that global data is stored at the address in the device memory space. A kernel that accesses the global data from the address in the devicemore » memory space is executed. The address in the device memory space is obtained based on contents of the updated TOC. When the executing is completed, the global data from the address in the device memory space is copied to the address in the host memory space.« less

High Curie temperature drive layer materials for ion-implanted magnetic bubble devices

NASA Technical Reports Server (NTRS)

Fratello, V. J.; Wolfe, R.; Blank, S. L.; Nelson, T. J.

1984-01-01

Ion implantation of bubble garnets can lower the Curie temperature by 70 C or more, thus limiting high temperature operation of devices with ion-implanted propagation patterns. Therefore, double-layer materials were made with a conventional 2-micron bubble storage layer capped by an ion-implantable drive layer of high Curie temperature, high magnetostriction material. Contiguous disk test patterns were implanted with varying doses of a typical triple implant. Quality of propagation was judged by quasistatic tests on 8-micron period major and minor loops. Variations of magnetization, uniaxial anisotropy, implant dose, and magnetostriction were investigated to ensure optimum flux matching, good charged wall coupling, and wide operating margins. The most successful drive layer compositions were in the systems (SmDyLuCa)3(FeSi)5O12 and (BiGdTmCa)3(FeSi)5O12 and had Curie temperatures 25-44 C higher than the storage layers.

A stable and convenient protein electrophoresis titration device with bubble removing system.

PubMed

Zhang, Qiang; Fan, Liu-Yin; Li, Wen-Lin; Cong, Feng-Song; Zhong, Ran; Chen, Jing-Jing; He, Yu-Chen; Xiao, Hua; Cao, Cheng-Xi

2017-07-01

Moving reaction boundary titration (MRBT) has a potential application to immunoassay and protein content analysis with high selectivity. However, air bubbles often impair the accuracy of MRBT, and the leakage of electrolyte greatly decreases the safety and convenience of electrophoretic titration. Addressing these two issues a reliable MRBT device with modified electrolyte chamber of protein titration was designed. Multiphysics computer simulation was conducted for optimization according to two-phase flow. The single chamber was made of two perpendicular cylinders with different diameters. After placing electrophoretic tube, the resident air in the junction next to the gel could be eliminated by a simple fast electrolyte flow. Removing the electrophoretic tube automatically prevented electrolyte leakage at the junction due to the gravity-induced negative pressure within the chamber. Moreover, the numerical simulation and experiments showed that the improved MRBT device has following advantages: (i) easy and rapid setup of electrophoretic tube within 20 s; (ii) simple and quick bubble dissipates from the chamber of titration within 2 s; (iii) no electrolyte leakage from the two chambers: and (iv) accurate protein titration and safe instrumental operation. The developed technique and apparatus greatly improves the performance of the previous MRBT device, and providing a new route toward practical application. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Hemolytic potential of hydrodynamic cavitation.

PubMed

Chambers, S D; Bartlett, R H; Ceccio, S L

2000-08-01

The purpose of this study was to determine the hemolytic potentials of discrete bubble cavitation and attached cavitation. To generate controlled cavitation events, a venturigeometry hydrodynamic device, called a Cavitation Susceptibility Meter (CSM), was constructed. A comparison between the hemolytic potential of discrete bubble cavitation and attached cavitation was investigated with a single-pass flow apparatus and a recirculating flow apparatus, both utilizing the CSM. An analytical model, based on spherical bubble dynamics, was developed for predicting the hemolysis caused by discrete bubble cavitation. Experimentally, discrete bubble cavitation did not correlate with a measurable increase in plasma-free hemoglobin (PFHb), as predicted by the analytical model. However, attached cavitation did result in significant PFHb generation. The rate of PFHb generation scaled inversely with the Cavitation number at a constant flow rate, suggesting that the size of the attached cavity was the dominant hemolytic factor.

Numerical Analysis of the Influence of Low Frequency Vibration on Bubble Growth

PubMed Central

Han, D.; Kedzierski, Mark A.

2017-01-01

Numerical simulation of bubble growth during pool boiling under the influence of low frequency vibration was performed to understand the influence of common vibrations such as those induced by wind, highway transportation, and nearby mechanical devices on the performance of thermal systems that rely on boiling. The simulations were done for saturated R123 boiling at 277.6 K with a 15 K wall superheat. The numerical volume-of-fluid method (fixed grid) was used to define the liquid-vapor interface. The basic bubble growth characteristics including the bubble departure diameter and the bubble departure time were determined as a function of the bubble contact angle (20°–80°), the vibration displacement (10 µm–50 µm), the vibration frequency (5 Hz–25 Hz), and the initial vibration direction (positive or negative). The bubble parameters were shown to be strongly dependent on the bubble contact angle at the surface. For example, both the bubble departure diameter and the bubble departure time increased with the contact angle. At the same vibration frequency and the initial vibration direction, the bubble departure diameter and the bubble departure time both decreased with increasing vibration displacement. In addition, the vibration frequency had a greater effect on the bubble growth characteristics than did the vibration displacement. The vibration frequency effect was strongly influenced by the initial vibration direction. The pressure contour, the volume fraction of vapor phase, the temperature profile, and the velocity vector were investigated to understand these dynamic bubble behaviors. The limitation of the computational fluid dynamics approach was also described. PMID:28747812

Further experimentation on bubble generation during transformer overload

DOE Office of Scientific and Technical Information (OSTI.GOV)

Oommen, T.V.

1992-03-01

This report covers additional work done during 1990 and 1991 on gas bubble generation under overload conditions. To improve visual bubble detection, a single disc coil was used. To further improve detection, a corona device was also used which signaled the onset of corona activity in the early stages of bubble formation. A total of fourteen model tests were conducted, half of which used the Inertaire system, and the remaining, a conservator (COPS). Moisture content of paper in the coil varied from 1.0% to 8.0%; gas (nitrogen) content varied from 1.0% to 8.8%. The results confirmed earlier observations that themore » mathematical bubble prediction model was not valid for high gas content model with relatively low moisture levels in the coil. An empirical relationship was formulated to accurately predict bubble evolution temperatures from known moisture and gas content values. For low moisture content models (below 2%), the simple Piper relationship was sufficient to predict bubble evolution temperatures, regardless of gas content. Moisture in the coil appears to be the key factor in bubble generation. Gas blanketed (Inertaire) systems do not appear to be prone to premature bubble generation from overloads as previously thought. The new bubble prediction model reveals that for a coil with 2% moisture, the bubble evolution temperature would be about 140{degrees}C. Since old transformers in service may have as much as 2% moisture in paper, the 140{degrees}C bubble evolution temperature may be taken as the lower limit of bubble evolution temperature under overload conditions for operating transformers. Drier insulation would raise the bubble evolution temperature.« less

Self-assembled nanostructured resistive switching memory devices fabricated by templated bottom-up growth

PubMed Central

Song, Ji-Min; Lee, Jang-Sik

2016-01-01

Metal-oxide-based resistive switching memory device has been studied intensively due to its potential to satisfy the requirements of next-generation memory devices. Active research has been done on the materials and device structures of resistive switching memory devices that meet the requirements of high density, fast switching speed, and reliable data storage. In this study, resistive switching memory devices were fabricated with nano-template-assisted bottom up growth. The electrochemical deposition was adopted to achieve the bottom-up growth of nickel nanodot electrodes. Nickel oxide layer was formed by oxygen plasma treatment of nickel nanodots at low temperature. The structures of fabricated nanoscale memory devices were analyzed with scanning electron microscope and atomic force microscope (AFM). The electrical characteristics of the devices were directly measured using conductive AFM. This work demonstrates the fabrication of resistive switching memory devices using self-assembled nanoscale masks and nanomateirals growth from bottom-up electrochemical deposition. PMID:26739122

Memory hierarchy using row-based compression

DOEpatents

Loh, Gabriel H.; O'Connor, James M.

2016-10-25

A system includes a first memory and a device coupleable to the first memory. The device includes a second memory to cache data from the first memory. The second memory includes a plurality of rows, each row including a corresponding set of compressed data blocks of non-uniform sizes and a corresponding set of tag blocks. Each tag block represents a corresponding compressed data block of the row. The device further includes decompression logic to decompress data blocks accessed from the second memory. The device further includes compression logic to compress data blocks to be stored in the second memory.

76 FR 55417 - In the Matter of Certain Dynamic Random Access Memory and Nand Flash Memory Devices and Products...

Federal Register 2010, 2011, 2012, 2013, 2014

2011-09-07

... Access Memory and Nand Flash Memory Devices and Products Containing Same; Notice of Institution of... importation, and the sale within the United States after importation of certain dynamic random access memory and NAND flash memory devices and products containing same by reason of infringement of certain claims...

Distinguishing between microscale gaseous bubbles and liquid drops

NASA Astrophysics Data System (ADS)

Tan, Beng Hau; An, Hongjie; Chan, Chon U.; Ohl, Claus-Dieter

2015-11-01

In recent years, there has been strong research interest in decorating surfaces with tiny bubbles and drops due to their potential applications in reducing slippage in micro and nanofluidic devices. Both nanobubbles and nanodrops are typically nucleated by exchanging fluids over a suitable substrate. However, the nucleation experiments present many challenges, such as reproducibility and the possibility of contamination. The use of one-use plastic syringes and needle cannulas in nucleation experiments can introduce polymeric contamination. A contaminated experiment may nucleate bubbles, drops or both. Moreover, it is surprisingly difficult to distinguish between bubbles and drops under the usual atomic force microscopy or optical techniques. Here we present an experimental study comparing bubbles and oil (PDMS) drops on an atomically smooth surface (HOPG). Instead of nucleating the objects via solvent exchange, we directly introduced bubbles via electrolysis, and oil drops by injecting a dilute solution. Contrary to previous reports, we find that under careful AFM characterisation, liquid drops and gaseous bubbles respond differently to a change in imaging force, and moreover present different characteristic force curves.

Three-dimensional features on oscillating microbubbles streaming flows

NASA Astrophysics Data System (ADS)

Rossi, Massimiliano; Marin, Alvaro G.; Wang, Cheng; Hilgenfeldt, Sascha; Kähler, Christian J.

2013-11-01

Ultrasound-driven oscillating micro-bubbles have been used as active actuators in microfluidic devices to perform manifold tasks such as mixing, sorting and manipulation of microparticles. A common configuration consists in side-bubbles, created by trapping air pockets in blind channels perpendicular to the main channel direction. This configuration results in bubbles with a semi-cylindrical shape that creates a streaming flow generally considered quasi two-dimensional. However, recent experiments performed with three-dimensional velocimetry methods have shown how microparticles can present significant three-dimensional trajectories, especially in regions close to the bubble interface. Several reasons will be discussed such as boundary effects of the bottom/top wall, deformation of the bubble interface leading to more complex vibrational modes, or bubble-particle interactions. In the present investigation, precise measurements of particle trajectories close to the bubble interface will be performed by means of 3D Astigmatic Particle Tracking Velocimetry. The results will allow us to characterize quantitatively the three-dimensional features of the streaming flow and to estimate its implications in practical applications as particle trapping, sorting or mixing.

Slowing down bubbles with sound

NASA Astrophysics Data System (ADS)

Poulain, Cedric; Dangla, Remie; Guinard, Marion

2009-11-01

We present experimental evidence that a bubble moving in a fluid in which a well-chosen acoustic noise is superimposed can be significantly slowed down even for moderate acoustic pressure. Through mean velocity measurements, we show that a condition for this effect to occur is for the acoustic noise spectrum to match or overlap the bubble's fundamental resonant mode. We render the bubble's oscillations and translational movements using high speed video. We show that radial oscillations (Rayleigh-Plesset type) have no effect on the mean velocity, while above a critical pressure, a parametric type instability (Faraday waves) is triggered and gives rise to nonlinear surface oscillations. We evidence that these surface waves are subharmonic and responsible for the bubble's drag increase. When the acoustic intensity is increased, Faraday modes interact and the strongly nonlinear oscillations behave randomly, leading to a random behavior of the bubble's trajectory and consequently to a higher slow down. Our observations may suggest new strategies for bubbly flow control, or two-phase microfluidic devices. It might also be applicable to other elastic objects, such as globules, cells or vesicles, for medical applications such as elasticity-based sorting.

Transcranial Doppler ultrasound and the etiology of neurologic decompression sickness during altitude decompression

NASA Technical Reports Server (NTRS)

Norfleet, W. T.; Powell, M. R.; Kumar, K. Vasantha; Waligora, J.

1993-01-01

The presence of gas bubbles in the arterial circulation can occur from iatrogenic mishaps, cardiopulmonary bypass devices, or following decompression, e.g., in deep-sea or SCUBA diving or in astronauts during extravehicular activities (EVA). We have examined the pathophysiology of neurological decompression sickness in human subjects who developed a large number of small gas bubbles in the right side of the heart as a result of hypobaric exposures. In one case, gas bubbles were detected in the middle cerebral artery (MCA) and the subject developed neurological symptoms; a 'resting' patent foramen ovalae (PFO) was found upon saline contrast echocardiography. A PFO was also detected in another individual who developed Spencer Grade 4 precordial Doppler ultrasound bubbles, but no evidence was seen of arterialization of bubbles upon insonation of either the MCA or common carotid artery. The reason for this difference in the behavior of intracardiac bubbles in these two individuals is not known. To date, we have not found evidence of right-to-left shunting of bubbles through pulmonary vasculature. The volume of gas bubbles present following decompression is examined and compared with the number arising from saline contrast injection. The estimates are comparable.

Short term evaluation of respiratory effort by premature infants supported with bubble nasal continuous airway pressure using Seattle-PAP and a standard bubble device

PubMed Central

Welty, Stephen E.; Rusin, Craig G.; Stanberry, Larissa I.; Mandy, George T.; Gest, Alfred L.; Ford, Jeremy M.; Backes, Carl H.; Richardson, C. Peter; Howard, Christopher R.; Hansen, Thomas N.

2018-01-01

Background Almost one million prematurely born infants die annually from respiratory insufficiency, predominantly in countries with limited access to respiratory support for neonates. The primary hypothesis tested in the present study was that a modified device for bubble nasal continuous positive airway pressure (Bn-CPAP) would provide lower work of spontaneous breathing, estimated by esophageal pressure-rate products. Methods Infants born <32 weeks gestation and stable on Bn-CPAP with FiO2 <0.30 were studied within 72 h following delivery. Esophageal pressures during spontaneous breathing were measured during 2 h on standard Bn-CPAP, then 2 h with Bn-CPAP using a modified bubble device presently termed Seattle-PAP, which produces a different pattern of pressure fluctuations and which provided greater respiratory support in preclinical studies, then 2 h on standard Bn-CPAP. Results All 40 infants enrolled completed the study and follow-up through 36 wks post menstrual age or hospital discharge, whichever came first. No infants were on supplemental oxygen at completion of follow-up. No infants developed pneumothoraces or nasal trauma, and no adverse events attributed to the study were observed. Pressure-rate products on the two devices were not different, but effort of breathing, assessed by areas under esophageal pressure-time curves, was lower with Seattle-PAP than with standard Bn-CPAP. Conclusion Use of Seattle-PAP to implement Bn-CPAP lowers the effort of breathing exerted even by relatively healthy spontaneously breathing premature neonates. Whether the lower effort of breathing observed with Seattle-PAP translates to improvements in neonatal mortality or morbidity will need to be determined by studies in appropriate patient populations. PMID:29590143

Size-sensitive particle trajectories in three-dimensional micro-bubble acoustic streaming flows

NASA Astrophysics Data System (ADS)

Volk, Andreas; Rossi, Massimiliano; Hilgenfeldt, Sascha; Rallabandi, Bhargav; Kähler, Christian; Marin, Alvaro

2015-11-01

Oscillating microbubbles generate steady streaming flows with interesting features and promising applications for microparticle manipulation. The flow around oscillating semi-cylindrical bubbles has been typically assumed to be independent of the axial coordinate. However, it has been recently revealed that particle motion is strongly three-dimensional: Small tracer particles follow vortical trajectories with pronounced axial displacements near the bubble, weaving a toroidal stream-surface. A well-known consequence of bubble streaming flows is size-dependent particle migration, which can be exploited for sorting and trapping of microparticles in microfluidic devices. In this talk, we will show how the three-dimensional toroidal topology found for small tracer particles is modified as the particle size increases up to 1/3 of the bubble radius. Our results show size-sensitive particle positioning along the axis of the semi-cylindrical bubble. In order to analyze the three-dimensional sorting and trapping capabilities of the system, experiments with an imposed flow and polydisperse particle solutions are also shown.

Controlled vesicle deformation and lysis by single oscillating bubbles

NASA Astrophysics Data System (ADS)

Marmottant, Philippe; Hilgenfeldt, Sascha

2003-05-01

The ability of collapsing (cavitating) bubbles to focus and concentrate energy, forces and stresses is at the root of phenomena such as cavitation damage, sonochemistry or sonoluminescence. In a biomedical context, ultrasound-driven microbubbles have been used to enhance contrast in ultrasonic images. The observation of bubble-enhanced sonoporation-acoustically induced rupture of membranes-has also opened up intriguing possibilities for the therapeutic application of sonoporation as an alternative to cell-wall permeation techniques such as electroporation and particle guns. However, these pioneering experiments have not been able to pinpoint the mechanism by which the violently collapsing bubble opens pores or larger holes in membranes. Here we present an experiment in which gentle (linear) bubble oscillations are sufficient to achieve rupture of lipid membranes. In this regime, the bubble dynamics and the ensuing sonoporation can be accurately controlled. The use of microbubbles as focusing agents makes acoustics on the micrometre scale (microacoustics) a viable tool, with possible applications in cell manipulation and cell-wall permeation as well as in microfluidic devices.

Continuous Positive Airway Pressure Strategies with Bubble Nasal Continuous Positive Airway Pressure: Not All Bubbling Is the Same: The Seattle Positive Airway Pressure System.

PubMed

Welty, Stephen E

2016-12-01

Premature neonates are predisposed to complications, including bronchopulmonary dysplasia (BPD). BPD is associated with long-term pulmonary and neurodevelopmental consequences. Noninvasive respiratory support with nasal continuous positive airway pressure (CPAP) has been recommended strongly by the American Academy of Pediatrics. However, CPAP implementation has shown at least a 50% failure rate. Enhancing nasal CPAP effectiveness may decrease the need for mechanical ventilation and reduce the incidence of BPD. Bubble nasal CPAP is better than nasal CPAP using mechanical devices and the bubbling provides air exchange in distal respiratory units. The Seattle PAP system reduces parameters that assess work of breathing. Copyright © 2016 Elsevier Inc. All rights reserved.

Photothermal generation of microbubbles on plasmonic nanostructures inside microfluidic channels

NASA Astrophysics Data System (ADS)

Li, Jingting; Li, Ming; Santos, Greggy M.; Zhao, Fusheng; Shih, Wei-Chuan

2016-03-01

Microbubbles have been utilized as micro-pumps, micro-mixers, micro-valves, micro-robots and surface cleaners. Various generation techniques can be found in the literature, including resistive heating, hydrodynamic methods, illuminating patterned metal films and noble metal nanoparticles of Au or Ag. We present photothermal microbubble generation by irradiating nanoporous gold disk covered microfluidic channels. The size of the microbubble can be controlled by adjusting the laser power. The dynamics of both bubble growth and shrinkage are studied. The advantages of this technique are flexible bubble generation locations, long bubble lifetimes, no need for light-adsorbing dyes, high controllability over bubble size, low power consumption, etc. This technique has the potential to provide new flow control functions in microfluidic devices.

Theoretical and Experimental Investigation of Particle Trapping via Acoustic Bubbles

NASA Astrophysics Data System (ADS)

Chen, Yun; Fang, Zecong; Merritt, Brett; Saadat-Moghaddam, Darius; Strack, Dillon; Xu, Jie; Lee, Sungyon

2014-11-01

One important application of lab-on-a-chip devices is the trapping and sorting of micro-objects, with acoustic bubbles emerging as an effective, non-contact method. Acoustically actuated bubbles are known to exert a secondary radiation force on micro-particles and trap them, when this radiation force exceeds the drag force that acts to keep the particles in motion. In this study, we theoretically evaluate the magnitudes of these two forces for varying actuation frequencies and voltages. In particular, the secondary radiation force is calculated directly from bubble oscillation shapes that have been experimentally measured for varying acoustic parameters. Finally, based on the force estimates, we predict the threshold voltage and frequency for trapping and compare them to the experimental results.

Resistive switching characteristics of polymer non-volatile memory devices in a scalable via-hole structure.

PubMed

Kim, Tae-Wook; Choi, Hyejung; Oh, Seung-Hwan; Jo, Minseok; Wang, Gunuk; Cho, Byungjin; Kim, Dong-Yu; Hwang, Hyunsang; Lee, Takhee

2009-01-14

The resistive switching characteristics of polyfluorene-derivative polymer material in a sub-micron scale via-hole device structure were investigated. The scalable via-hole sub-microstructure was fabricated using an e-beam lithographic technique. The polymer non-volatile memory devices varied in size from 40 x 40 microm(2) to 200 x 200 nm(2). From the scaling of junction size, the memory mechanism can be attributed to the space-charge-limited current with filamentary conduction. Sub-micron scale polymer memory devices showed excellent resistive switching behaviours such as a large ON/OFF ratio (I(ON)/I(OFF) approximately 10(4)), excellent device-to-device switching uniformity, good sweep endurance, and good retention times (more than 10,000 s). The successful operation of sub-micron scale memory devices of our polyfluorene-derivative polymer shows promise to fabricate high-density polymer memory devices.

Propagation of misfit dislocations from buffer/Si interface into Si

DOEpatents

Liliental-Weber, Zuzanna [El Sobrante, CA; Maltez, Rogerio Luis [Porto Alegre, BR; Morkoc, Hadis [Richmond, VA; Xie, Jinqiao [Raleigh, VA

2011-08-30

Misfit dislocations are redirected from the buffer/Si interface and propagated to the Si substrate due to the formation of bubbles in the substrate. The buffer layer growth process is generally a thermal process that also accomplishes annealing of the Si substrate so that bubbles of the implanted ion species are formed in the Si at an appropriate distance from the buffer/Si interface so that the bubbles will not migrate to the Si surface during annealing, but are close enough to the interface so that a strain field around the bubbles will be sensed by dislocations at the buffer/Si interface and dislocations are attracted by the strain field caused by the bubbles and move into the Si substrate instead of into the buffer epi-layer. Fabrication of improved integrated devices based on GaN and Si, such as continuous wave (CW) lasers and light emitting diodes, at reduced cost is thereby enabled.

Characteristics of carbon nanotubes based micro-bubble generator for thermal jet printing.

PubMed

Zhou, Wenli; Li, Yupeng; Sun, Weijun; Wang, Yunbo; Zhu, Chao

2011-12-01

We propose a conceptional thermal printhead with dual microbubble generators mounted parallel in each nozzle chamber, where multiwalled carbon nanotubes are adopted as heating elements with much higher energy efficiency than traditional approaches using noble metals or polysilicon. Tailing effect of droplet can be excluded by appropriate control of grouped bubble generations. Characteristics of the corresponding micro-fabricated microbubble generators were comprehensively studied before the formation of printhead. Electrical properties of the microheaters on glass substrate in air and performance of bubble generation underwater focusing on the relationships between input power, device resistance and bubble behavior were probed. Proof-of-concept bubble generations grouped to eliminate the tailing effect of droplet were performed indicating precise pattern with high resolution could be realized by this kind of printhead. Experimental results revealed guidance to the geometric design of the printhead as well as its fabrication margin and the electrical control of the microbubble generators.

Further experimentation on bubble generation during transformer overload. Final report

DOE Office of Scientific and Technical Information (OSTI.GOV)

Oommen, T.V.

1992-03-01

This report covers additional work done during 1990 and 1991 on gas bubble generation under overload conditions. To improve visual bubble detection, a single disc coil was used. To further improve detection, a corona device was also used which signaled the onset of corona activity in the early stages of bubble formation. A total of fourteen model tests were conducted, half of which used the Inertaire system, and the remaining, a conservator (COPS). Moisture content of paper in the coil varied from 1.0% to 8.0%; gas (nitrogen) content varied from 1.0% to 8.8%. The results confirmed earlier observations that themore » mathematical bubble prediction model was not valid for high gas content model with relatively low moisture levels in the coil. An empirical relationship was formulated to accurately predict bubble evolution temperatures from known moisture and gas content values. For low moisture content models (below 2%), the simple Piper relationship was sufficient to predict bubble evolution temperatures, regardless of gas content. Moisture in the coil appears to be the key factor in bubble generation. Gas blanketed (Inertaire) systems do not appear to be prone to premature bubble generation from overloads as previously thought. The new bubble prediction model reveals that for a coil with 2% moisture, the bubble evolution temperature would be about 140{degrees}C. Since old transformers in service may have as much as 2% moisture in paper, the 140{degrees}C bubble evolution temperature may be taken as the lower limit of bubble evolution temperature under overload conditions for operating transformers. Drier insulation would raise the bubble evolution temperature.« less

Energy-band engineering for tunable memory characteristics through controlled doping of reduced graphene oxide.

PubMed

Han, Su-Ting; Zhou, Ye; Yang, Qing Dan; Zhou, Li; Huang, Long-Biao; Yan, Yan; Lee, Chun-Sing; Roy, Vellaisamy A L

2014-02-25

Tunable memory characteristics are used in multioperational mode circuits where memory cells with various functionalities are needed in one combined device. It is always a challenge to obtain control over threshold voltage for multimode operation. On this regard, we use a strategy of shifting the work function of reduced graphene oxide (rGO) in a controlled manner through doping gold chloride (AuCl3) and obtained a gradient increase of rGO work function. By inserting doped rGO as floating gate, a controlled threshold voltage (Vth) shift has been achieved in both p- and n-type low voltage flexible memory devices with large memory window (up to 4 times for p-type and 8 times for n-type memory devices) in comparison with pristine rGO floating gate memory devices. By proper energy band engineering, we demonstrated a flexible floating gate memory device with larger memory window and controlled threshold voltage shifts.

Comparison of HFNC, bubble CPAP and SiPAP on aerosol delivery in neonates: An in-vitro study.

PubMed

Sunbul, Fatemah S; Fink, James B; Harwood, Robert; Sheard, Meryl M; Zimmerman, Ralph D; Ari, Arzu

2015-11-01

Aerosol drug delivery via high flow nasal cannula (HFNC), bubble continuous positive airway pressure (CPAP), and synchronized inspiratory positive airway pressure (SiPAP) has not been quantified in spontaneously breathing premature infants. The purpose of this study was to compare aerosol delivery via HFNC, bubble CPAP, and SiPAP in a model of a simulated spontaneously breathing preterm infant. The types of CPAP systems and nebulizer positions used during aerosol therapy will impact aerosol deposition in simulated spontaneously breathing infants. Quantitative, comparative, in-vitro study. A breath simulator was set to preterm infant settings (VT : 9 ml, RR: 50 bpm and Ti: 0.5 sec) and connected to the trachea of an anatomical upper airway model of a preterm infant via collecting filter distal to the trachea. The HFNC (Optiflow; Fisher & Paykel), Bubble CPAP (Fisher & Paykel), and SiPAP (Carefusion) were attached to the nares of the model via each device's proprietary nasal cannula and set to deliver a baseline of 5 cm H2 O pressure. Albuterol sulfate (2.5 mg/0.5 ml) was aerosolized with a mesh nebulizer (Aeroneb Solo) positioned(1) proximal to the patient and(2) prior to the humidifier (n = 5). The drug was eluted from the filter with 0.1 N HCl and analyzed via spectrophotometry (276 nm). Data were analyzed using descriptive statistics, t-tests, and one-way analysis of variance (ANOVA), with P < 0.05 significant. At position 1, the trend of lower deposition (mean ± SD%) across devices was not significant (0.90 ± 0.26, 0.70 ± 0.16 and 0.59 ± 0.19, respectively; P = 0.098); however, in position 2, drug delivery with SiPAP (0.79 ± 0.11) was lower compared to both HFNC (1.30 ± 0.17; P = 0.003) and bubble CPAP (1.24 ± 0.24; p = 0.008). Placement of the nebulizer prior to the humidifier increased deposition with all devices (P < 0.05). Aerosol can be delivered via all three devices used in this study. Device selection and nebulizer position impacted aerosol delivery in this simulated model of a spontaneously breathing preterm infant. © 2014 Wiley Periodicals, Inc.

Demonstration of a wireless driven MEMS pond skater that uses EWOD technology

NASA Astrophysics Data System (ADS)

Mita, Y.; Li, Y.; Kubota, M.; Morishita, S.; Parkes, W.; Haworth, L. I.; Flynn, B. W.; Terry, J. G.; Tang, T.-B.; Ruthven, A. D.; Smith, S.; Walton, A. J.

2009-07-01

A silicon swimming robot or pond skating device has been demonstrated. It floats on liquid surfaces using surface tension and is capable of movement using electrowetting on dielectric (EWOD) based propulsion. Its dimensions are 6 × 9 mm and the driving mechanism involves first trapping air bubbles within the liquid onto the hydrophobic surface of the device. The air bubbles are then moved using EWOD, which provides the propulsion. The device employs a recently reported TaO EWOD technology enabling a driving voltage of ≈15 V, which is low enough for RF power transmission, thus facilitating wire-free movement. A wired version has been measured to move 1.35 mm in 168 ms (a speed of 8 mm s -1). This low voltage-EWOD (<15 V) device, fabricated using a CMOS compatible process, is believed to be the world's smallest swimming MEMS device that has no mechanical moving parts. The paper also reports results of EWOD droplet operation driven by wireless power transmission and demonstrates that such a wireless design can be successfully mounted on a floating EWOD device to produce movement.

Metal-organic molecular device for non-volatile memory storage

DOE Office of Scientific and Technical Information (OSTI.GOV)

Radha, B., E-mail: radha.boya@manchester.ac.uk, E-mail: kulkarni@jncasr.ac.in; Sagade, Abhay A.; Kulkarni, G. U., E-mail: radha.boya@manchester.ac.uk, E-mail: kulkarni@jncasr.ac.in

Non-volatile memory devices have been of immense research interest for their use in active memory storage in powered off-state of electronic chips. In literature, various molecules and metal compounds have been investigated in this regard. Molecular memory devices are particularly attractive as they offer the ease of storing multiple memory states in a unique way and also represent ubiquitous choice for miniaturized devices. However, molecules are fragile and thus the device breakdown at nominal voltages during repeated cycles hinders their practical applicability. Here, in this report, a synergetic combination of an organic molecule and an inorganic metal, i.e., a metal-organicmore » complex, namely, palladium hexadecylthiolate is investigated for memory device characteristics. Palladium hexadecylthiolate following partial thermolysis is converted to a molecular nanocomposite of Pd(II), Pd(0), and long chain hydrocarbons, which is shown to exhibit non-volatile memory characteristics with exceptional stability and retention. The devices are all solution-processed and the memory action stems from filament formation across the pre-formed cracks in the nanocomposite film.« less

Status and Prospects of ZnO-Based Resistive Switching Memory Devices

NASA Astrophysics Data System (ADS)

Simanjuntak, Firman Mangasa; Panda, Debashis; Wei, Kung-Hwa; Tseng, Tseung-Yuen

2016-08-01

In the advancement of the semiconductor device technology, ZnO could be a prospective alternative than the other metal oxides for its versatility and huge applications in different aspects. In this review, a thorough overview on ZnO for the application of resistive switching memory (RRAM) devices has been conducted. Various efforts that have been made to investigate and modulate the switching characteristics of ZnO-based switching memory devices are discussed. The use of ZnO layer in different structure, the different types of filament formation, and the different types of switching including complementary switching are reported. By considering the huge interest of transparent devices, this review gives the concrete overview of the present status and prospects of transparent RRAM devices based on ZnO. ZnO-based RRAM can be used for flexible memory devices, which is also covered here. Another challenge in ZnO-based RRAM is that the realization of ultra-thin and low power devices. Nevertheless, ZnO not only offers decent memory properties but also has a unique potential to be used as multifunctional nonvolatile memory devices. The impact of electrode materials, metal doping, stack structures, transparency, and flexibility on resistive switching properties and switching parameters of ZnO-based resistive switching memory devices are briefly compared. This review also covers the different nanostructured-based emerging resistive switching memory devices for low power scalable devices. It may give a valuable insight on developing ZnO-based RRAM and also should encourage researchers to overcome the challenges.

A wavelet analysis of scaling laws and long-memory in stock market volatility

NASA Astrophysics Data System (ADS)

Vuorenmaa, Tommi A.

2005-05-01

This paper studies the time-varying behavior of scaling laws and long-memory. This is motivated by the earlier finding that in the FX markets a single scaling factor might not always be sufficient across all relevant timescales: a different region may exist for intradaily time-scales and for larger time-scales. In specific, this paper investigates (i) if different scaling regions appear in stock market as well, (ii) if the scaling factor systematically differs from the Brownian, (iii) if the scaling factor is constant in time, and (iv) if the behavior can be explained by the heterogenuity of the players in the market and/or by intraday volatility periodicity. Wavelet method is used because it delivers a multiresolution decomposition and has excellent local adaptiviness properties. As a consequence, a wavelet-based OLS method allows for consistent estimation of long-memory. Thus issues (i)-(iv) shed light on the magnitude and behavior of a long-memory parameter, as well. The data are the 5-minute volatility series of Nokia Oyj at the Helsinki Stock Exchange around the burst of the IT-bubble. Period one represents the era of "irrational exuberance" and another the time after it. The results show that different scaling regions (i.e. multiscaling) may appear in the stock markets and not only in the FX markets, the scaling factor and the long-memory parameter are systematically different from the Brownian and they do not have to be constant in time, and that the behavior can be explained for a significant part by an intraday volatility periodicity called the New York effect. This effect was magnified by the frenzy trading of short-term speculators in the bubble period. The found stronger long-memory is also attributable to irrational exuberance.

Reconfigurable pipelined processor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Saccardi, R.J.

1989-09-19

This patent describes a reconfigurable pipelined processor for processing data. It comprises: a plurality of memory devices for storing bits of data; a plurality of arithmetic units for performing arithmetic functions with the data; cross bar means for connecting the memory devices with the arithmetic units for transferring data therebetween; at least one counter connected with the cross bar means for providing a source of addresses to the memory devices; at least one variable tick delay device connected with each of the memory devices and arithmetic units; and means for providing control bits to the variable tick delay device formore » variably controlling the input and output operations thereof to selectively delay the memory devices and arithmetic units to align the data for processing in a selected sequence.« less

Forced Ion Migration for Chalcogenide Phase Change Memory Device

NASA Technical Reports Server (NTRS)

Campbell, Kristy A (Inventor)

2013-01-01

Non-volatile memory devices with two stacked layers of chalcogenide materials comprising the active memory device have been investigated for their potential as phase-change memories. The devices tested included GeTe/SnTe, Ge2Se3/SnTe, and Ge2Se3/SnSe stacks. All devices exhibited resistance switching behavior. The polarity of the applied voltage with respect to the SnTe or SnSe layer was critical to the memory switching properties, due to the electric field induced movement of either Sn or Te into the Ge-chalcogenide layer. One embodiment of the invention is a device comprising a stack of chalcogenide-containing layers which exhibit phase-change switching only after a reverse polarity voltage potential is applied across the stack causing ion movement into an adjacent layer and thus "activating" the device to act as a phase-change random access memory device or a reconfigurable electronics device when the applied voltage potential is returned to the normal polarity. Another embodiment of the invention is a device that is capable of exhibiting more than two data states.

Forced ion migration for chalcogenide phase change memory device

NASA Technical Reports Server (NTRS)

Campbell, Kristy A. (Inventor)

2011-01-01

Non-volatile memory devices with two stacked layers of chalcogenide materials comprising the active memory device have been investigated for their potential as phase change memories. The devices tested included GeTe/SnTe, Ge.sub.2Se.sub.3/SnTe, and Ge.sub.2Se.sub.3/SnSe stacks. All devices exhibited resistance switching behavior. The polarity of the applied voltage with respect to the SnTe or SnSe layer was critical to the memory switching properties, due to the electric field induced movement of either Sn or Te into the Ge-chalcogenide layer. One embodiment of the invention is a device comprising a stack of chalcogenide-containing layers which exhibit phase change switching only after a reverse polarity voltage potential is applied across the stack causing ion movement into an adjacent layer and thus "activating" the device to act as a phase change random access memory device or a reconfigurable electronics device when the applied voltage potential is returned to the normal polarity. Another embodiment of the invention is a device that is capable of exhibiting more that two data states.

Forced ion migration for chalcogenide phase change memory device

NASA Technical Reports Server (NTRS)

Campbell, Kristy A. (Inventor)

2012-01-01

Non-volatile memory devices with two stacked layers of chalcogenide materials comprising the active memory device have been investigated for their potential as phase-change memories. The devices tested included GeTe/SnTe, Ge.sub.2Se.sub.3/SnTe, and Ge.sub.2Se.sub.3/SnSe stacks. All devices exhibited resistance switching behavior. The polarity of the applied voltage with respect to the SnTe or SnSe layer was critical to the memory switching properties, due to the electric field induced movement of either Sn or Te into the Ge-chalcogenide layer. One embodiment of the invention is a device comprising a stack of chalcogenide-containing layers which exhibit phase-change switching only after a reverse polarity voltage potential is applied across the stack causing ion movement into an adjacent layer and thus "activating" the device to act as a phase-change random access memory device or a reconfigurable electronics device when the applied voltage potential is returned to the normal polarity. Another embodiment of the invention is a device that is capable of exhibiting more than two data states.

Time-resolved processes in a pulsed electrical discharge in argon bubbles in water

NASA Astrophysics Data System (ADS)

Gershman, S.; Belkind, A.

2010-12-01

A phenomenological picture of a pulsed electrical discharge in gas bubbles in water is produced by combining electrical, spectroscopic, and imaging characterization methods. The discharge is generated by applying 1 μ s pulses of 5 to 20 kV between a needle and a disk electrode submerged in water. An Ar gas bubble surrounds the tip of the needle electrode. Imaging, electrical characteristics, and time-resolved optical emission spectroscopic data suggest a fast streamer propagation mechanism and the formation of a plasma channel in the bubble. Comparing the electrical and imaging data for consecutive pulses applied to the bubble at a frequency of 1 Hz indicates that each discharge proceeds as an entirely new process with no memory of the previous discharge aside from the presence of long-lived chemical species, such as ozone and oxygen. Imaging and electrical data show the presence of two discharge events during each applied voltage pulse, a forward discharge near the beginning of the applied pulse depositing charge on the surface of the bubble and a reverse discharge removing the accumulated charge from the water/gas interface when the applied voltage is turned off. The pd value of ~ 300-500 torr cm, the 1 μs long pulse duration, low repetition rate, and unidirectional character of the applied voltage pulses make the discharge process here unique compared to the traditional corona or dielectric barrier discharges.

Ultralow-power non-volatile memory cells based on P(VDF-TrFE) ferroelectric-gate CMOS silicon nanowire channel field-effect transistors.

PubMed

Van, Ngoc Huynh; Lee, Jae-Hyun; Whang, Dongmok; Kang, Dae Joon

2015-07-21

Nanowire-based ferroelectric-complementary metal-oxide-semiconductor (NW FeCMOS) nonvolatile memory devices were successfully fabricated by utilizing single n- and p-type Si nanowire ferroelectric-gate field effect transistors (NW FeFETs) as individual memory cells. In addition to having the advantages of single channel n- and p-type Si NW FeFET memory, Si NW FeCMOS memory devices exhibit a direct readout voltage and ultralow power consumption. The reading state power consumption of this device is less than 0.1 pW, which is more than 10(5) times lower than the ON-state power consumption of single-channel ferroelectric memory. This result implies that Si NW FeCMOS memory devices are well suited for use in non-volatile memory chips in modern portable electronic devices, especially where low power consumption is critical for energy conservation and long-term use.

An upconverted photonic nonvolatile memory.

PubMed

Zhou, Ye; Han, Su-Ting; Chen, Xian; Wang, Feng; Tang, Yong-Bing; Roy, V A L

2014-08-21

Conventional flash memory devices are voltage driven and found to be unsafe for confidential data storage. To ensure the security of the stored data, there is a strong demand for developing novel nonvolatile memory technology for data encryption. Here we show a photonic flash memory device, based on upconversion nanocrystals, which is light driven with a particular narrow width of wavelength in addition to voltage bias. With the help of near-infrared light, we successfully manipulate the multilevel data storage of the flash memory device. These upconverted photonic flash memory devices exhibit high ON/OFF ratio, long retention time and excellent rewritable characteristics.

Simultaneous observation of nascent plasma and bubble induced by laser ablation in water with various pulse durations

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tamura, Ayaka, E-mail: atamura@hiroshima-u.ac.jp; Matsumoto, Ayumu; Nishi, Naoya

2015-05-07

We investigate the effects of pulse duration on the dynamics of the nascent plasma and bubble induced by laser ablation in water. To examine the relationship between the nascent plasma and the bubble without disturbed by shot-to-shot fluctuation, we observe the images of the plasma and the bubble simultaneously by using two intensified charge coupled device detectors. We successfully observe the images of the plasma and bubble during the pulsed-irradiation, when the bubble size is as small as 20 μm. The light-emitting region of the plasma during the laser irradiation seems to exceed the bubble boundary in the case of themore » short-pulse (30-ns pulse) irradiation, while the size of the plasma is significantly smaller than that of the bubble in the case of the long-pulse (100-ns pulse) irradiation. The results suggest that the extent of the plasma quenching in the initial stage significantly depends on the pulse duration. Also, we investigate how the plasma-bubble relationship in the very early stage affects the shape of the atomic spectral lines observed at the later delay time of 600 ns. The present work gives important information to obtain high quality spectra in the application of underwater laser-induced breakdown spectroscopy, as well as to clarify the mechanism of liquid-phase laser ablation.« less

Propagation of a finite bubble in a Hele-Shaw channel of variable depth

NASA Astrophysics Data System (ADS)

Juel, Anne; Franco-Gomez, Andres; Thompson, Alice; Hazel, Andrew

2017-11-01

We study the propagation of finite bubbles in a Hele-Shaw channel, where a centred rail is introduced to provide a small axially-uniform depth constriction. We demonstrate experimentally that this channel geometry can be used as a passive sorting device. Single air bubbles carried within silicone oil are generally transported on one side of the rail. However, for flow rates marginally larger than a critical value, a narrow band of bubble sizes on the order of the rail width can propagate over the rail, while bubbles of other sizes segregate to the side of the rail. The width of this band of bubble sizes increases with flow rate and the size of the most stable bubble can be tuned by varying the rail width. We present a depth-averaged theory which reveals that the mechanism relies on a non-trivial interaction between capillary and viscous forces that is fully dynamic, rather than being a simple modification of capillary static solutions. In contrast, for larger bubbles and sufficiently large imposed flow rates, we find that initially centred bubbles do not converge onto a steady mode of propagation. Instead they transiently explore weakly unstable steady modes, an evolution which results in their break-up and eventual settling into a steady state of changed topology. The financial support of CONICYT and the Leverhulme Trust are gratefully acknowledged.

Particle Transport and Size Sorting in Bubble Microstreaming Flow

NASA Astrophysics Data System (ADS)

Thameem, Raqeeb; Rallabandi, Bhargav; Wang, Cheng; Hilgenfeldt, Sascha

2014-11-01

Ultrasonic driving of sessile semicylindrical bubbles results in powerful steady streaming flows that are robust over a wide range of driving frequencies. In a microchannel, this flow field pattern can be fine-tuned to achieve size-sensitive sorting and trapping of particles at scales much smaller than the bubble itself; the sorting mechanism has been successfully described based on simple geometrical considerations. We investigate the sorting process in more detail, both experimentally (using new parameter variations that allow greater control over the sorting) and theoretically (incorporating the device geometry as well as the superimposed channel flow into an asymptotic theory). This results in optimized criteria for size sorting and a theoretical description that closely matches the particle behavior close to the bubble, the crucial region for size sorting.

Acoustic bubble sorting for ultrasound contrast agent enrichment.

PubMed

Segers, Tim; Versluis, Michel

2014-05-21

An ultrasound contrast agent (UCA) suspension contains encapsulated microbubbles with a wide size distribution, with radii ranging from 1 to 10 μm. Medical transducers typically operate at a single frequency, therefore only a small selection of bubbles will resonate to the driving ultrasound pulse. Thus, the sensitivity can be improved by narrowing down the size distribution. Here, we present a simple lab-on-a-chip method to sort the population of microbubbles on-chip using a traveling ultrasound wave. First, we explore the physical parameter space of acoustic bubble sorting using well-defined bubble sizes formed in a flow-focusing device, then we demonstrate successful acoustic sorting of a commercial UCA. This novel sorting strategy may lead to an overall improvement of the sensitivity of contrast ultrasound by more than 10 dB.

Future Applications of Electronic Technology to Education.

ERIC Educational Resources Information Center

Lewis, Arthur J.; And Others

Developments in electronic technology that have improved and linked together telecommunication and computers are discussed, as well as their use in instruction, implications of this use, and associated issues. The first section briefly describes the following developments: microcomputers and microprocessors, bubble memory, lasers, holography,…

Selective particle trapping using an oscillating microbubble.

PubMed

Rogers, Priscilla; Neild, Adrian

2011-11-07

The ability to isolate and sort analytes within complex microfluidic volumes is essential to the success of lab-on-a-chip (LOC) devices. In this study, acoustically-excited oscillating bubbles are used to selectively trap particles, with the selectivity being a function of both particle size and density. The operating principle is based on the interplay between the strong microstreaming-induced drag force and the attractive secondary Bjerknes force. Depending upon the size of the bubble, and thus its resonant frequency, it is possible to cause one force to dominate over the other, resulting in either particle attraction or repulsion. A theoretical analysis reveals the extent of the contribution of each force for a given particle size; in close agreement with experimental findings. Density-based trapping is also demonstrated, highlighting that denser particles experience a larger secondary Bjerknes force resulting in their attraction. This study showcases the excellent applicability and versatility of using oscillating bubbles as a trapping and sorting mechanism within LOC devices. This journal is © The Royal Society of Chemistry 2011

Plasma density injection and flow during coaxial helicity injection in a tokamak

NASA Astrophysics Data System (ADS)

Hooper, E. B.

2018-02-01

Whole device, resistive MHD simulations of spheromaks and tokamaks have used a large diffusion coefficient that maintains a nearly constant density throughout the device. In the present work, helicity and plasma are coinjected into a low-density plasma in a tokamak with a small diffusion coefficient. As in previous simulations [Hooper et al., Phys. Plasmas 20, 092510 (2013)], a flux bubble is formed, which expands to fill the tokamak volume. The injected plasma is non-uniform inside the bubble. The flow pattern is analyzed; when the simulation is not axisymmetric, an n = 1 mode on the surface of the bubble generates leakage of plasma into the low-density volume. Closed flux is generated following injection, as in experiments and previous simulations. The result provides a more detailed physics analysis of the injection, including density non-uniformities in the plasma that may affect its use as a startup plasma [Raman et al., Phys. Rev. Lett. 97, 175002 (2006)].

Performance Gains of Propellant Management Devices for Liquid Hydrogen Depots

NASA Technical Reports Server (NTRS)

Hartwig, Jason W.; McQuillen, John B.; Chato, David J.

2013-01-01

This paper presents background, experimental design, and preliminary experimental results for the liquid hydrogen bubble point tests conducted at the Cryogenic Components Cell 7 facility at the NASA Glenn Research Center in Cleveland, Ohio. The purpose of the test series was to investigate the parameters that affect liquid acquisition device (LAD) performance in a liquid hydrogen (LH2) propellant tank, to mitigate risk in the final design of the LAD for the Cryogenic Propellant Storage and Transfer Technology Demonstration Mission, and to provide insight into optimal LAD operation for future LH2 depots. Preliminary test results show an increase in performance and screen retention over the low reference LH2 bubble point value for a 325 2300 screen in three separate ways, thus improving fundamental LH2 LAD performance. By using a finer mesh screen, operating at a colder liquid temperature, and pressurizing with a noncondensible pressurant gas, a significant increase in margin is achieved in bubble point pressure for LH2 screen channel LADs.

Fast selective trapping and release of picoliter droplets in a 3D microfluidic PDMS multi-trap system with bubbles.

PubMed

Rambach, Richard W; Biswas, Preetika; Yadav, Ashutosh; Garstecki, Piotr; Franke, Thomas

2018-02-12

The selective manipulation and incubation of individual picoliter drops in high-throughput droplet based microfluidic devices still remains challenging. We used a surface acoustic wave (SAW) to induce a bubble in a 3D designed multi-trap polydimethylsiloxane (PDMS) device to manipulate multiple droplets and demonstrate the selection, incubation and on-demand release of aqueous droplets from a continuous oil flow. By controlling the position of the acoustic actuation, individual droplets are addressed and selectively released from a droplet stream of 460 drops per s. A complete trapping and releasing cycle can be as short as 70 ms and has no upper limit for incubation time. We characterize the fluidic function of the hybrid device in terms of electric power, pulse duration and acoustic path.

Recirculation bubbler for glass melter apparatus

DOEpatents

Guerrero, Hector [Evans, GA; Bickford, Dennis [Folly Beach, SC

2007-06-05

A gas bubbler device provides enhanced recirculation of molten glass within a glass melter apparatus. The bubbler device includes a tube member disposed within a pool of molten glass contained in the melter. The tube member includes a lower opening through which the molten glass enters and upper slots disposed close to (above or below) the upper surface of the pool of molten glass and from which the glass exits. A gas (air) line is disposed within the tube member and extends longitudinally thereof. A gas bubble distribution device, which is located adjacent to the lower end of the tube member and is connected to the lower end of the gas line, releases gas through openings therein so as to produce gas bubbles of a desired size in the molten glass and in a distributed pattern across the tube member.

76 FR 73676 - Certain Dynamic Random Access Memory Devices, and Products Containing Same; Receipt of Complaint...

Federal Register 2010, 2011, 2012, 2013, 2014

2011-11-29

... INTERNATIONAL TRADE COMMISSION [DN 2859] Certain Dynamic Random Access Memory Devices, and.... International Trade Commission has received a complaint entitled In Re Certain Dynamic Random Access Memory... certain dynamic random access memory devices, and products containing same. The complaint names Elpida...

Research on the Conductivity-Based Detection Principles of Bubbles in Two-Phase Flows and the Design of a Bubble Sensor for CBM Wells.

PubMed

Wu, Chuan; Wen, Guojun; Han, Lei; Wu, Xiaoming

2016-09-17

The parameters of gas-liquid two-phase flow bubbles in field coalbed methane (CBM) wells are of great significance for analyzing coalbed methane output, judging faults in CBM wells, and developing gas drainage and extraction processes, which stimulates an urgent need for detecting bubble parameters for CBM wells in the field. However, existing bubble detectors cannot meet the requirements of the working environments of CBM wells. Therefore, this paper reports findings on the principles of measuring the flow pattern, velocity, and volume of two-phase flow bubbles based on conductivity, from which a new bubble sensor was designed. The structural parameters and other parameters of the sensor were then computed, the "water film phenomenon" produced by the sensor was analyzed, and the appropriate materials for making the sensor were tested and selected. After the sensor was successfully devised, laboratory tests and field tests were performed, and the test results indicated that the sensor was highly reliable and could detect the flow patterns of two-phase flows, as well as the quantities, velocities, and volumes of bubbles. With a velocity measurement error of ±5% and a volume measurement error of ±7%, the sensor can meet the requirements of field use. Finally, the characteristics and deficiencies of the bubble sensor are summarized based on an analysis of the measurement errors and a comparison of existing bubble-measuring devices and the designed sensor.

Research on the Conductivity-Based Detection Principles of Bubbles in Two-Phase Flows and the Design of a Bubble Sensor for CBM Wells

PubMed Central

Wu, Chuan; Wen, Guojun; Han, Lei; Wu, Xiaoming

2016-01-01

The parameters of gas-liquid two-phase flow bubbles in field coalbed methane (CBM) wells are of great significance for analyzing coalbed methane output, judging faults in CBM wells, and developing gas drainage and extraction processes, which stimulates an urgent need for detecting bubble parameters for CBM wells in the field. However, existing bubble detectors cannot meet the requirements of the working environments of CBM wells. Therefore, this paper reports findings on the principles of measuring the flow pattern, velocity, and volume of two-phase flow bubbles based on conductivity, from which a new bubble sensor was designed. The structural parameters and other parameters of the sensor were then computed, the “water film phenomenon” produced by the sensor was analyzed, and the appropriate materials for making the sensor were tested and selected. After the sensor was successfully devised, laboratory tests and field tests were performed, and the test results indicated that the sensor was highly reliable and could detect the flow patterns of two-phase flows, as well as the quantities, velocities, and volumes of bubbles. With a velocity measurement error of ±5% and a volume measurement error of ±7%, the sensor can meet the requirements of field use. Finally, the characteristics and deficiencies of the bubble sensor are summarized based on an analysis of the measurement errors and a comparison of existing bubble-measuring devices and the designed sensor. PMID:27649206

Similarity between the response of memristive and memcapacitive circuits subjected to ramped voltage

NASA Astrophysics Data System (ADS)

Kanygin, Mikhail A.; Katkov, Mikhail V.; Pershin, Yuriy V.

2017-07-01

We report a similar feature in the response of resistor-memristor and capacitor-memcapacitor circuits with threshold-type memory devices driven by triangular waveform voltage. In both cases, the voltage across the memory device is stabilized during the switching of the memory device state. While in the memristive circuit this feature is observed when the applied voltage changes in one direction, the memcapacitive circuit with a ferroelectric memcapacitor demonstrates the voltage stabilization effect at both sweep directions. The discovered behavior of capacitor-memcapacitor circuit is also demonstrated experimentally. We anticipate that our observation can be used in the design of electronic circuits with emergent memory devices as well as in the identification and characterization of memory effects in threshold-type memory devices.

Cycle accurate and cycle reproducible memory for an FPGA based hardware accelerator

DOEpatents

Asaad, Sameh W.; Kapur, Mohit

2016-03-15

A method, system and computer program product are disclosed for using a Field Programmable Gate Array (FPGA) to simulate operations of a device under test (DUT). The DUT includes a device memory having a number of input ports, and the FPGA is associated with a target memory having a second number of input ports, the second number being less than the first number. In one embodiment, a given set of inputs is applied to the device memory at a frequency Fd and in a defined cycle of time, and the given set of inputs is applied to the target memory at a frequency Ft. Ft is greater than Fd and cycle accuracy is maintained between the device memory and the target memory. In an embodiment, a cycle accurate model of the DUT memory is created by separating the DUT memory interface protocol from the target memory storage array.

Memory and Spin Injection Devices Involving Half Metals

DOE PAGES

Shaughnessy, M.; Snow, Ryan; Damewood, L.; ...

2011-01-01

We suggest memory and spin injection devices fabricated with half-metallic materials and based on the anomalous Hall effect. Schematic diagrams of the memory chips, in thin film and bulk crystal form, are presented. Spin injection devices made in thin film form are also suggested. These devices do not need any external magnetic field but make use of their own magnetization. Only a gate voltage is needed. The carriers are 100% spin polarized. Memory devices may potentially be smaller, faster, and less volatile than existing ones, and the injection devices may be much smaller and more efficient than existing spin injectionmore » devices.« less

Method and device for maximizing memory system bandwidth by accessing data in a dynamically determined order

NASA Technical Reports Server (NTRS)

Schwab, Andrew J. (Inventor); Aylor, James (Inventor); Hitchcock, Charles Young (Inventor); Wulf, William A. (Inventor); McKee, Sally A. (Inventor); Moyer, Stephen A. (Inventor); Klenke, Robert (Inventor)

2000-01-01

A data processing system is disclosed which comprises a data processor and memory control device for controlling the access of information from the memory. The memory control device includes temporary storage and decision ability for determining what order to execute the memory accesses. The compiler detects the requirements of the data processor and selects the data to stream to the memory control device which determines a memory access order. The order in which to access said information is selected based on the location of information stored in the memory. The information is repeatedly accessed from memory and stored in the temporary storage until all streamed information is accessed. The information is stored until required by the data processor. The selection of the order in which to access information maximizes bandwidth and decreases the retrieval time.

High-Performance Flexible Organic Nano-Floating Gate Memory Devices Functionalized with Cobalt Ferrite Nanoparticles.

PubMed

Jung, Ji Hyung; Kim, Sunghwan; Kim, Hyeonjung; Park, Jongnam; Oh, Joon Hak

2015-10-07

Nano-floating gate memory (NFGM) devices are transistor-type memory devices that use nanostructured materials as charge trap sites. They have recently attracted a great deal of attention due to their excellent performance, capability for multilevel programming, and suitability as platforms for integrated circuits. Herein, novel NFGM devices have been fabricated using semiconducting cobalt ferrite (CoFe2O4) nanoparticles (NPs) as charge trap sites and pentacene as a p-type semiconductor. Monodisperse CoFe2O4 NPs with different diameters have been synthesized by thermal decomposition and embedded in NFGM devices. The particle size effects on the memory performance have been investigated in terms of energy levels and particle-particle interactions. CoFe2O4 NP-based memory devices exhibit a large memory window (≈73.84 V), a high read current on/off ratio (read I(on)/I(off)) of ≈2.98 × 10(3), and excellent data retention. Fast switching behaviors are observed due to the exceptional charge trapping/release capability of CoFe2O4 NPs surrounded by the oleate layer, which acts as an alternative tunneling dielectric layer and simplifies the device fabrication process. Furthermore, the NFGM devices show excellent thermal stability, and flexible memory devices fabricated on plastic substrates exhibit remarkable mechanical and electrical stability. This study demonstrates a viable means of fabricating highly flexible, high-performance organic memory devices. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Extended write combining using a write continuation hint flag

DOEpatents

Chen, Dong; Gara, Alan; Heidelberger, Philip; Ohmacht, Martin; Vranas, Pavlos

2013-06-04

A computing apparatus for reducing the amount of processing in a network computing system which includes a network system device of a receiving node for receiving electronic messages comprising data. The electronic messages are transmitted from a sending node. The network system device determines when more data of a specific electronic message is being transmitted. A memory device stores the electronic message data and communicating with the network system device. A memory subsystem communicates with the memory device. The memory subsystem stores a portion of the electronic message when more data of the specific message will be received, and the buffer combines the portion with later received data and moves the data to the memory device for accessible storage.

High Performance Transparent Transistor Memory Devices Using Nano-Floating Gate of Polymer/ZnO Nanocomposites

NASA Astrophysics Data System (ADS)

Shih, Chien-Chung; Lee, Wen-Ya; Chiu, Yu-Cheng; Hsu, Han-Wen; Chang, Hsuan-Chun; Liu, Cheng-Liang; Chen, Wen-Chang

2016-02-01

Nano-floating gate memory devices (NFGM) using metal nanoparticles (NPs) covered with an insulating polymer have been considered as a promising electronic device for the next-generation nonvolatile organic memory applications NPs. However, the transparency of the device with metal NPs is restricted to 60~70% due to the light absorption in the visible region caused by the surface plasmon resonance effects of metal NPs. To address this issue, we demonstrate a novel NFGM using the blends of hole-trapping poly (9-(4-vinylphenyl) carbazole) (PVPK) and electron-trapping ZnO NPs as the charge storage element. The memory devices exhibited a remarkably programmable memory window up to 60 V during the program/erase operations, which was attributed to the trapping/detrapping of charge carriers in ZnO NPs/PVPK composite. Furthermore, the devices showed the long-term retention time (>105 s) and WRER test (>200 cycles), indicating excellent electrical reliability and stability. Additionally, the fabricated transistor memory devices exhibited a relatively high transparency of 90% at the wavelength of 500 nm based on the spray-coated PEDOT:PSS as electrode, suggesting high potential for transparent organic electronic memory devices.

Preparation of monodisperse microbubbles using an integrated embedded capillary T-junction with electrohydrodynamic focusing.

PubMed

Parhizkar, Maryam; Stride, Eleanor; Edirisinghe, Mohan

2014-07-21

This work investigates the generation of monodisperse microbubbles using a microfluidic setup combined with electrohydrodynamic processing. A basic T-junction microfluidic device was modified by applying an electrical potential difference across the outlet channel. A model glycerol air system was selected for the experiments. In order to investigate the influence of the electric field strength on bubble formation, the applied voltage was increased systematically up to 21 kV. The effect of solution viscosity and electrical conductivity was also investigated. It was found that with increasing electrical potential difference, the size of the microbubbles reduced to ~25% of the capillary diameter whilst their size distribution remained narrow (polydispersity index ~1%). A critical value of 12 kV was found above which no further significant reduction in the size of the microbubbles was observed. The findings suggest that the size of the bubbles formed in the T-junction (i.e. in the absence of the electric field) is strongly influenced by the viscosity of the solution. The eventual size of bubbles produced by the composite device, however, was only weakly dependent upon viscosity. Further experiments, in which the solution electrical conductivity was varied by the addition of a salt indicated that this had a much stronger influence upon bubble size.

Highly integrated autonomous lab-on-a-chip device for on-line and in situ determination of environmental chemical parameters.

PubMed

Martinez-Cisneros, Cynthia; da Rocha, Zaira; Seabra, Antonio; Valdés, Francisco; Alonso-Chamarro, Julián

2018-06-05

The successful integration of sample pretreatment stages, sensors, actuators and electronics in microfluidic devices enables the attainment of complete micro total analysis systems, also known as lab-on-a-chip devices. In this work, we present a novel monolithic autonomous microanalyzer that integrates microfluidics, electronics, a highly sensitive photometric detection system and a sample pretreatment stage consisting on an embedded microcolumn, all in the same device, for on-line determination of relevant environmental parameters. The microcolumn can be filled/emptied with any resin or powder substrate whenever required, paving the way for its application to several analytical processes: separation, pre-concentration or ionic-exchange. To promote its autonomous operation, avoiding issues caused by bubbles in photometric detection systems, an efficient monolithic bubble removal structure was also integrated. To demonstrate its feasibility, the microanalyzer was successfully used to determine nitrate and nitrite in continuous flow conditions, providing real time and continuous information.

Experimental microbubble generation by sudden pressure drop and fluidics

NASA Astrophysics Data System (ADS)

Franco Gutierrez, Fernando; Figueroa Espinoza, Bernardo; Aguilar Corona, Alicia; Vargas Correa, Jesus; Solorio Diaz, Gildardo

2014-11-01

Mass and heat transfer, as well as chemical species in bubbly flow are of importance in environmental and industrial applications. Microbubbles are well suited to these applications due to the large interface contact area and residence time. The objective of this investigation is to build devices to produce microbubbles using two methods: pressure differences and fluidics. Some characteristics, advantages and drawbacks of both methods are briefly discussed, as well as the characterization of the bubbly suspensions in terms of parameters such as the pressure jump and bubble equivalent diameter distribution. The authors acknowledge the support of Consejo Nacional de Ciencia y Tecnología.

One bipolar transistor selector - One resistive random access memory device for cross bar memory array

NASA Astrophysics Data System (ADS)

Aluguri, R.; Kumar, D.; Simanjuntak, F. M.; Tseng, T.-Y.

2017-09-01

A bipolar transistor selector was connected in series with a resistive switching memory device to study its memory characteristics for its application in cross bar array memory. The metal oxide based p-n-p bipolar transistor selector indicated good selectivity of about 104 with high retention and long endurance showing its usefulness in cross bar RRAM devices. Zener tunneling is found to be the main conduction phenomena for obtaining high selectivity. 1BT-1R device demonstrated good memory characteristics with non-linearity of 2 orders, selectivity of about 2 orders and long retention characteristics of more than 105 sec. One bit-line pull-up scheme shows that a 650 kb cross bar array made with this 1BT1R devices works well with more than 10 % read margin proving its ability in future memory technology application.

Satellite Test of Radiation Impact on Ramtron 512K FRAM

NASA Technical Reports Server (NTRS)

MacLeod, Todd C.; Sayyah, Rana; Sims, W. Herb; Varnavas, Kosta A.; Ho, Fat D.

2009-01-01

The Memory Test Experiment is a space test of a ferroelectric memory device on a low Earth orbit satellite. The test consists of writing and reading data with a ferroelectric based memory device. Any errors are detected and are stored on board the satellite. The data is send to the ground through telemetry once a day. Analysis of the data can determine the kind of error that was found and will lead to a better understanding of the effects of space radiation on memory systems. The test will be one of the first flight demonstrations of ferroelectric memory in a near polar orbit which allows testing in a varied radiation environment. The memory devices being tested is a Ramtron Inc. 512K memory device. This paper details the goals and purpose of this experiment as well as the development process. The process for analyzing the data to gain the maximum understanding of the performance of the ferroelectric memory device is detailed.

Tapered Screened Channel PMD for Cryogenic Liquids

NASA Astrophysics Data System (ADS)

Dodge, Franklin T.; Green, Steve T.; Walter, David B.

2004-02-01

If a conventional spacecraft propellant management device (PMD) of the screened channel type were employed with a cryogenic liquid, vapor bubbles generated within the channel by heat transfer could ``dry out'' the channel screens and thereby cause the channels to admit large amounts of vapor from the tank into the liquid outflow. This paper describes a new tapered channel design that passively `pumps' bubbles away from the outlet port and vents them into the tank. A predictive mathematical model of the operating principle is presented and discussed. Scale-model laboratory tests were conducted and the mathematical model agreed well with the measured rates of bubble transport velocity. Finally, an example of the use of the predictive model for a realistic spacecraft application is presented. The model predicts that bubble clearing rates are acceptable even in tanks up to 2 m in length.

Electric-field-controlled interface dipole modulation for Si-based memory devices.

PubMed

Miyata, Noriyuki

2018-05-31

Various nonvolatile memory devices have been investigated to replace Si-based flash memories or emulate synaptic plasticity for next-generation neuromorphic computing. A crucial criterion to achieve low-cost high-density memory chips is material compatibility with conventional Si technologies. In this paper, we propose and demonstrate a new memory concept, interface dipole modulation (IDM) memory. IDM can be integrated as a Si field-effect transistor (FET) based memory device. The first demonstration of this concept employed a HfO 2 /Si MOS capacitor where the interface monolayer (ML) TiO 2 functions as a dipole modulator. However, this configuration is unsuitable for Si-FET-based devices due to its large interface state density (D it ). Consequently, we propose, a multi-stacked amorphous HfO 2 /1-ML TiO 2 /SiO 2 IDM structure to realize a low D it and a wide memory window. Herein we describe the quasi-static and pulse response characteristics of multi-stacked IDM MOS capacitors and demonstrate flash-type and analog memory operations of an IDM FET device.

Resistive switching effect in the planar structure of all-printed, flexible and rewritable memory device based on advanced 2D nanocomposite of graphene quantum dots and white graphene flakes

NASA Astrophysics Data System (ADS)

Muqeet Rehman, Muhammad; Uddin Siddiqui, Ghayas; Kim, Sowon; Choi, Kyung Hyun

2017-08-01

Pursuit of the most appropriate materials and fabrication methods is essential for developing a reliable, rewritable and flexible memory device. In this study, we have proposed an advanced 2D nanocomposite of white graphene (hBN) flakes embedded with graphene quantum dots (GQDs) as the functional layer of a flexible memory device owing to their unique electrical, chemical and mechanical properties. Unlike the typical sandwich type structure of a memory device, we developed a cost effective planar structure, to simplify device fabrication and prevent sneak current. The entire device fabrication was carried out using printing technology followed by encapsulation in an atomically thin layer of aluminum oxide (Al2O3) for protection against environmental humidity. The proposed memory device exhibited attractive bipolar switching characteristics of high switching ratio, large electrical endurance and enhanced lifetime, without any crosstalk between adjacent memory cells. The as-fabricated device showed excellent durability for several bending cycles at various bending diameters without any degradation in bistable resistive states. The memory mechanism was deduced to be conductive filamentary; this was validated by illustrating the temperature dependence of bistable resistive states. Our obtained results pave the way for the execution of promising 2D material based next generation flexible and non-volatile memory (NVM) applications.

Novel conformal organic antireflective coatings for advanced I-line lithography

NASA Astrophysics Data System (ADS)

Deshpande, Shreeram V.; Nowak, Kelly A.; Fowler, Shelly; Williams, Paul; Arjona, Mikko

2001-08-01

Flash memory chips are playing a critical role in semiconductor devices due to increased popularity of hand held electronic communication devices such as cell phones and PDAs (personal Digital Assistants). Flash memory offers two primary advantages in semiconductor devices. First, it offers flexibility of in-circuit programming capability to reduce the loss from programming errors and to significantly reduce commercialization time to market for new devices. Second, flash memory has a double density memory capability through stacked gate structures which increases the memory capability and thus saves significantly on chip real estate. However, due to stacked gate structures the requirements for manufacturing of flash memory devices are significantly different from traditional memory devices. Stacked gate structures also offer unique challenges to lithographic patterning materials such as Bottom Anti-Reflective Coating (BARC) compositions used to achieve CD control and to minimize standing wave effect in photolithography. To be applicable in flash memory manufacturing a BARC should form a conformal coating on high topography of stacked gate features as well as provide the normal anti-reflection properties for CD control. In this paper we report on a new highly conformal advanced i-line BARC for use in design and manufacture of flash memory devices. Conformal BARCs being significantly thinner in trenches than the planarizing BARCs offer the advantage of reducing BARC overetch and thus minimizing resist thickness loss.

Distributed multiport memory architecture

NASA Technical Reports Server (NTRS)

Kohl, W. H. (Inventor)

1983-01-01

A multiport memory architecture is diclosed for each of a plurality of task centers connected to a command and data bus. Each task center, includes a memory and a plurality of devices which request direct memory access as needed. The memory includes an internal data bus and an internal address bus to which the devices are connected, and direct timing and control logic comprised of a 10-state ring counter for allocating memory devices by enabling AND gates connected to the request signal lines of the devices. The outputs of AND gates connected to the same device are combined by OR gates to form an acknowledgement signal that enables the devices to address the memory during the next clock period. The length of the ring counter may be effectively lengthened to any multiple of ten to allow for more direct memory access intervals in one repetitive sequence. One device is a network bus adapter which serially shifts onto the command and data bus, a data word (8 bits plus control and parity bits) during the next ten direct memory access intervals after it has been granted access. The NBA is therefore allocated only one access in every ten intervals, which is a predetermined interval for all centers. The ring counters of all centers are periodically synchronized by DMA SYNC signal to assure that all NBAs be able to function in synchronism for data transfer from one center to another.

Vertical bloch line memory

NASA Technical Reports Server (NTRS)

Katti, R.; Wu, J.; Stadler, H.

1990-01-01

Vertical Bloch Line (VBL) memory is a recently conceived, integrated, solid-state, block-access, VLSI memory which offers the potential of 1Gbit/sq cm real storage density, gigabit per second data rates, and sub-millisecond average access times simultaneously at relatively low mass, volume, and power values when compared to alternative technologies. VBL's are micromagnetic structures within magnetic domain walls which can be manipulated using magnetic fields from integrated conductors. The presence or absence of VBL pairs are used to store binary information. At present, efforts are being directed at developing a single-chip memory using 25Mbit/sq cm technology in magnetic garnet material which integrates, at a single operating point, the writing, storage, reading, and amplification functions needed in a memory. This paper describes the current design architecture, functional elements, and supercomputer simulation results which are used to assist the design process. The current design architecture uses three metal layers, two ion implantation steps for modulating the thickness of the magnetic layer, one ion implantation step for assisting propagation in the major line track, one NiFe soft magnetic layer, one CoPt hard magnetic layer, and one reflective Cr layer for facilitating magneto-optic observation of magnetic structure. Data are stored in a series of elongated magnetic domains, called stripes, which serve as storage sites for arrays of VBL pairs. The ends of these stripes are placed near conductors which serve as VBL read/write gates. A major line track is present to provide a source and propagation path for magnetic bubbles. Writing and reading, respectively, are achieved by converting magnetic bubbles to VBL's and vice versa. The output function is effected by stretching a magnetic bubble and detecting it magnetoresistively. Experimental results from the past design cycle created four design goals for the current design cycle. First, the bias field ranges for the stripes and the major line needed to be matched. Second, the magnetic field barrier between the stripe and the read/write gates needed to be reduced. Third, current conductor routing needed to be improved to reduce occurrences of open-circuiting, short-circuiting, and eddy-current shielding. Fourth, a modified Co-alloy was needed with an increased coercivity and controlled magnetization to allow VBL stabilization to occur without affecting stripe stability.

Continuous-wave laser generated jets for needle free applications

PubMed Central

Visser, Claas Willem; Schlautmann, Stefan

2016-01-01

We designed and built a microfluidic device for the generation of liquid jets produced by thermocavitation. A continuous wave (CW) laser was focused inside a micro-chamber filled with a light-absorbing solution to create a rapidly expanding vapor bubble. The chamber is connected to a micro-channel which focuses and ejects the liquid jet through the exit. The bubble growth and the jet velocity were measured as a function of the devices geometry (channel diameter D and chamber width A). The fastest jets were those for relatively large chamber size with respect to the channel diameter. Elongated and focused jets up to 29 m/s for a channel diameter of 250 μm and chamber size of 700 μm were obtained. The proposed CW laser-based device is potentially a compact option for a practical and commercially feasible needle-free injector. PMID:26858816

Effect of added mass on the interaction of bubbles in a low-Reynolds-number shear flow.

PubMed

Lavrenteva, Olga; Prakash, Jai; Nir, Avinoam

2016-02-01

Equal size air bubbles that are entrapped by a Taylor vortex of the secondary flow in a Couette device, thereby defying buoyancy, slowly form a stable ordered ring with equal separation distances between all neighbors. We present two models of the process dynamics based on force balance on a bubble in the presence of other bubbles positioned on the same streamline in a simple shear flow. The forces taken into account are the viscous resistance, the added mass force, and the inertia-induced repulsing force between two bubbles in a low-Reynolds-number shear flow obtained in Prakash et al. [J. Prakash et al., Phys. Rev. E 87, 043002 (2013)]. The first model of the process assumes that each bubble interacts solely with its nearest neighbors. The second model takes into account pairwise interactions among all the bubbles in the ring. The performed dynamic simulations were compared to the experimental results reported in Prakash et al. [J. Prakash et al., Phys. Rev. E 87, 043002 (2013)] and to the results of quasistationary models (ignoring the added mass effect) suggested in that paper. It is demonstrated that taking into account the effect of added mass, the models describe the major effect of the bubbles' ordering, provide good estimation of the relaxation time, and also predict nonmonotonic behavior of the separation distance between the bubbles, which exhibit over- and undershooting of equilibrium separations. The latter effects were observed in experiments, but are not predicted by the quasistationary models.

Memory device for two-dimensional radiant energy array computers

NASA Technical Reports Server (NTRS)

Schaefer, D. H.; Strong, J. P., III (Inventor)

1977-01-01

A memory device for two dimensional radiant energy array computers was developed, in which the memory device stores digital information in an input array of radiant energy digital signals that are characterized by ordered rows and columns. The memory device contains a radiant energy logic storing device having a pair of input surface locations for receiving a pair of separate radiant energy digital signal arrays and an output surface location adapted to transmit a radiant energy digital signal array. A regenerative feedback device that couples one of the input surface locations to the output surface location in a manner for causing regenerative feedback is also included

Two-Phase Flow in Packed Columns and Generation of Bubbly Suspensions for Chemical Processing in Space

NASA Technical Reports Server (NTRS)

Motil, Brian J.; Green, R. D.; Nahra, H. K.; Sridhar, K. R.

2000-01-01

For long-duration space missions, the life support and In-Situ Resource Utilization (ISRU) systems necessary to lower the mass and volume of consumables carried from Earth will require more sophisticated chemical processing technologies involving gas-liquid two-phase flows. This paper discusses some preliminary two-phase flow work in packed columns and generation of bubbly suspensions, two types of flow systems that can exist in a number of chemical processing devices. The experimental hardware for a co-current flow, packed column operated in two ground-based low gravity facilities (two-second drop tower and KC- 135 low-gravity aircraft) is described. The preliminary results of this experimental work are discussed. The flow regimes observed and the conditions under which these flow regimes occur are compared with the available co-current packed column experimental work performed in normal gravity. For bubbly suspensions, the experimental hardware for generation of uniformly sized bubbles in Couette flow in microgravity conditions is described. Experimental work was performed on a number of bubbler designs, and the capillary bubble tube was found to produce the most consistent size bubbles. Low air flow rates and low Couette flow produce consistent 2-3 mm bubbles, the size of interest for the "Behavior of Rapidly Sheared Bubbly Suspension" flight experiment. Finally the mass transfer implications of these two-phase flows is qualitatively discussed.

Transistor and memory devices based on novel organic and biomaterials

NASA Astrophysics Data System (ADS)

Tseng, Jia-Hung

Organic semiconductor devices have aroused considerable interest because of the enormous potential in many technological applications. Organic electroluminescent devices have been extensively applied in display technology. Rapid progress has also been made in transistor and memory devices. This thesis considers aspects of the transistor based on novel organic single crystals and memory devices using hybrid nanocomposites comprising polymeric/inorganic nanoparticles, and biomolecule/quantum dots. Organic single crystals represent highly ordered structures with much less imperfections compared to amorphous thin films for probing the intrinsic charge transport in transistor devices. We demonstrate that free-standing, thin organic single crystals with natural flexing ability can be fabricated as flexible transistors. We study the surface properties of the organic crystals to determine a nearly perfect surface leading to high performance transistors. The flexible transistors can maintain high performance under reversible bending conditions. Because of the high quality crystal technique, we further develop applications on organic complementary circuits and organic single crystal photovoltaics. In the second part, two aspects of memory devices are studied. We examine the charge transfer process between conjugated polymers and metal nanoparticles. This charge transfer process is essential for the conductance switching in nanoseconds to induce the memory effect. Under the reduction condition, the charge transfer process is eliminated as well as the memory effect, raising the importance of coupling between conjugated systems and nanoparticle accepters. The other aspect of memory devices focuses on the interaction of virus biomolecules with quantum dots or metal nanoparticles in the devices. We investigate the impact of memory function on the hybrid bio-inorganic system. We perform an experimental analysis of the charge storage activation energy in tobacco mosaic virus with platinum nanoparticles. It is established that the effective barrier height in the materials systems needs to be further engineered in order to have sufficiently long retention times. Finally other novel architectures such as negative differential resistance devices and high density memory arrays are investigated for their influence on memory technology.

Microgravity Boiling Enhancement Using Vibration-Based Fluidic Technologies

NASA Astrophysics Data System (ADS)

Smith, Marc K.; Glezer, Ari; Heffington, Samuel N.

2002-11-01

Thermal management is an important subsystem in many devices and technologies used in a microgravity environment. The increased power requirements of new Space technologies and missions mean that the capacity and efficiency of thermal management systems must be improved. The current work addresses this need through the investigation and development of a direct liquid immersion heat transfer cell for microgravity applications. The device is based on boiling heat transfer enhanced by two fluidic technologies developed at Georgia Tech. The first of these fluidic technologies, called vibration-induced bubble ejection, is shown in Fig. 1. Here, an air bubble in water is held against a vibrating diaphragm by buoyancy. The vibrations at 440 Hz induce violent oscillations of the air/water interface that can result in small bubbles being ejected from the larger air bubble (Fig. 1a) and, simultaneously, the collapse of the air/water interface against the solid surface (Fig. 1b). Both effects would be useful during a heat transfer process. Bubble ejection would force vapor bubbles back into the cooler liquid so that they can condense. Interfacial collapse would tend to keep the hot surface wet thereby increasing liquid evaporation and heat transfer to the bulk liquid. Figure 2 shows the effect of vibrating the solid surface at 7.6 kHz. Here, small-scale capillary waves appear on the surface of the bubble near the attachment point on the solid surface (the grainy region). The vibration produces a net force on the bubble that pushes it away from the solid surface. As a result, the bubble detaches from the solid and is propelled into the bulk liquid. This force works against buoyancy and so it would be even more effective in a microgravity environment. The benefit of the force in a boiling process would be to push vapor bubbles off the solid surface, thus helping to keep the solid surface wet and increasing the heat transfer. The second fluidic technology to be employed in this work is a synthetic jet, shown schematically in Fig. 3. The jet is produced using a small, sealed cavity with a sharp-edged orifice on one side and a vibrating diaphragm on the opposite side. The jet is formed when fluid is alternately sucked into and then expelled from the cavity by the motion of the diaphragm. This alternating motion means that there is no net mass addition to the system. Thus, there is no need for input piping or complex fluidic packaging.

Near-post meniscus-induced migration and assembly of bubbles.

PubMed

Liu, Jianlin; Li, Shanpeng; Hou, Jian

2016-02-21

Although the effect of interfacial tension of liquids is often negligible at the macroscale, it plays an essential role in areas such as superhydrophobicity on rough surfaces, water walking of aquatic creatures and self-assembly of small particles or droplets. In this study, we investigate the migration and assembly of bubbles near the meniscus produced by a slender post with various cross-sections. The results show that the bubble always migrates to the solid wall of the post, although the cross-section shape, material and tilt angle of the post are different. In particular, the final position of the bubble is not located at the singular point of the cross-section, which is beyond what we have imagined. We simulate the morphology of the triple contact line via Surface Evolver, and then address the mechanism of bubble's migration from the viewpoint of force analysis and energy calculation. The factors governing the final position of the bubble are analyzed according to the scaling law. These obtained results cast new light on modulating the assembly of bubbles and small droplets by varying the material, geometric shape and posture of the post in water. These findings also have important implications for oil collection and oil displacement in petroleum engineering, drug delivery, design of microfluidic devices and chemical sensors.

THE RELIABILITY AND CONCURRENT VALIDITY OF MEASUREMENTS USED TO QUANTIFY LUMBAR SPINE MOBILITY: AN ANALYSIS OF AN IPHONE® APPLICATION AND GRAVITY BASED INCLINOMETRY

PubMed Central

Pizzini, Matias; Robinson, Ashley; Yanez, Dania; Hanney, William J.

2013-01-01

Purpose/Aim: This purpose of this study was to investigate the reliability, minimal detectable change (MDC), and concurrent validity of active spinal mobility measurements using a gravity‐based bubble inclinometer and iPhone® application. Materials/Methods: Two investigators each used a bubble inclinometer and an iPhone® with inclinometer application to measure total thoracolumbo‐pelvic flexion, isolated lumbar flexion, total thoracolumbo‐pelvic extension, and thoracolumbar lateral flexion in 30 asymptomatic participants using a blinded repeated measures design. Results: The procedures used in this investigation for measuring spinal mobility yielded good intrarater and interrater reliability with Intraclass Correlation Coefficients (ICC) for bubble inclinometry ≥ 0.81 and the iPhone® ≥ 0.80. The MDC90 for the interrater analysis ranged from 4° to 9°. The concurrent validity between bubble inclinometry and the iPhone® application was good with ICC values of ≥ 0.86. The 95% level of agreement indicates that although these measuring instruments are equivalent individual differences of up to 18° may exist when using these devices interchangeably. Conclusions: The bubble inclinometer and iPhone® possess good intrarater and interrater reliability as well as concurrent validity when strict measurement procedures are adhered to. This study provides preliminary evidence to suggest that smart phone applications may offer clinical utility comparable to inclinometry for quantifying spinal mobility. Clinicians should be aware of the potential disagreement when using these devices interchangeably. Level of Evidence: 2b (Observational study of reliability) PMID:23593551

The reliability and concurrent validity of measurements used to quantify lumbar spine mobility: an analysis of an iphone® application and gravity based inclinometry.

PubMed

Kolber, Morey J; Pizzini, Matias; Robinson, Ashley; Yanez, Dania; Hanney, William J

2013-04-01

PURPOSEAIM: This purpose of this study was to investigate the reliability, minimal detectable change (MDC), and concurrent validity of active spinal mobility measurements using a gravity-based bubble inclinometer and iPhone® application. MATERIALSMETHODS: Two investigators each used a bubble inclinometer and an iPhone® with inclinometer application to measure total thoracolumbo-pelvic flexion, isolated lumbar flexion, total thoracolumbo-pelvic extension, and thoracolumbar lateral flexion in 30 asymptomatic participants using a blinded repeated measures design. The procedures used in this investigation for measuring spinal mobility yielded good intrarater and interrater reliability with Intraclass Correlation Coefficients (ICC) for bubble inclinometry ≥ 0.81 and the iPhone® ≥ 0.80. The MDC90 for the interrater analysis ranged from 4° to 9°. The concurrent validity between bubble inclinometry and the iPhone® application was good with ICC values of ≥ 0.86. The 95% level of agreement indicates that although these measuring instruments are equivalent individual differences of up to 18° may exist when using these devices interchangeably. The bubble inclinometer and iPhone® possess good intrarater and interrater reliability as well as concurrent validity when strict measurement procedures are adhered to. This study provides preliminary evidence to suggest that smart phone applications may offer clinical utility comparable to inclinometry for quantifying spinal mobility. Clinicians should be aware of the potential disagreement when using these devices interchangeably. 2b (Observational study of reliability).

Titanium oxide nonvolatile memory device and its application

NASA Astrophysics Data System (ADS)

Wang, Wei

In recent years, the semiconductor memory industry has seen an ever-increasing demand for nonvolatile memory (NVM), which is fueled by portable consumer electronic applications like the mobile phone and MP3 player. FLASH memory has been the most widely used nonvolatile memories in these systems, and has successfully kept up with CMOS scaling for many generations. However, as FLASH memory faces major scaling challenges beyond 22nm, non-charge-based nonvolatile memories are widely researched as candidates to replace FLASH. Titanium oxide (TiOx) nonvolatile memory device is considered to be a promising choice due to its controllable nonvolatile memory switching, good scalability, compatibility with CMOS processing and potential for 3D stacking. However, several major issues need to be overcome before TiOx NVM device can be adopted in manufacturing. First, there exists a highly undesirable high-voltage stress initiation process (FORMING) before the device can switch between high and low resistance states repeatedly. By analyzing the conductive behaviors of the memory device before and after FORMING, we propose that FORMING involves breaking down an interfacial layer between its Pt electrode and the TiOx thin film, and that FORMING is not needed if the Pt-TiOx interface can be kept clean during fabrication. An in-situ fabrication process is developed for cross-point TiOx NVM device, which enables in-situ deposition of the critical layers of the memory device and thus achieves clean interfaces between Pt electrodes and TiOx film. Testing results show that FORMING is indeed eliminated for memory devices made with the in-situ fabrication process. It verifies the significance of in-situ deposition without vacuum break in the fabrication of TiOx NVM devices. Switching parameters statistics of TiOx NVM devices are studied and compared for unipolar and bipolar switching modes. RESET mechanisms are found to be different for the two switching modes: unipolar switching can be explained by thermal dissolution model, and bipolar switching by local redox reaction model. Since it is generally agreed that the memory switching of TiOx NVM devices is based on conductive filaments, reusability of these conductive filaments becomes an intriguing issue to determine the memory device's endurance. A 1X3 cross-point test structure is built to investigate whether conductive filaments can be reused after RESET. It is found that the conductive filament is destroyed during unipolar switching, while can be reused during bipolar switching. The result is a good indication that bipolar switching should have better endurance than unipolar switching. Finally a novel application of the two-terminal resistive switching NVM devices is demonstrated. To reduce SRAM leakage power, we propose a nonvolatile SRAM cell with two back-up NVM devices. This novel cell offers nonvolatile storage, thus allowing selected blocks of SRAM to be powered down during operation. There is no area penalty in this approach. Only a slight performance penalty is expected.

Projected phase-change memory devices.

PubMed

Koelmans, Wabe W; Sebastian, Abu; Jonnalagadda, Vara Prasad; Krebs, Daniel; Dellmann, Laurent; Eleftheriou, Evangelos

2015-09-03

Nanoscale memory devices, whose resistance depends on the history of the electric signals applied, could become critical building blocks in new computing paradigms, such as brain-inspired computing and memcomputing. However, there are key challenges to overcome, such as the high programming power required, noise and resistance drift. Here, to address these, we present the concept of a projected memory device, whose distinguishing feature is that the physical mechanism of resistance storage is decoupled from the information-retrieval process. We designed and fabricated projected memory devices based on the phase-change storage mechanism and convincingly demonstrate the concept through detailed experimentation, supported by extensive modelling and finite-element simulations. The projected memory devices exhibit remarkably low drift and excellent noise performance. We also demonstrate active control and customization of the programming characteristics of the device that reliably realize a multitude of resistance states.

Bulk heterojunction polymer memory devices with reduced graphene oxide as electrodes.

PubMed

Liu, Juqing; Yin, Zongyou; Cao, Xiehong; Zhao, Fei; Lin, Anping; Xie, Linghai; Fan, Quli; Boey, Freddy; Zhang, Hua; Huang, Wei

2010-07-27

A unique device structure with a configuration of reduced graphene oxide (rGO) /P3HT:PCBM/Al has been designed for the polymer nonvolatile memory device. The current-voltage (I-V) characteristics of the fabricated device showed the electrical bistability with a write-once-read-many-times (WORM) memory effect. The memory device exhibits a high ON/OFF ratio (10(4)-10(5)) and low switching threshold voltage (0.5-1.2 V), which are dependent on the sheet resistance of rGO electrode. Our experimental results confirm that the carrier transport mechanisms in the OFF and ON states are dominated by the thermionic emission current and ohmic current, respectively. The polarization of PCBM domains and the localized internal electrical field formed among the adjacent domains are proposed to explain the electrical transition of the memory device.

Systems and methods to control multiple peripherals with a single-peripheral application code

DOEpatents

Ransom, Ray M.

2013-06-11

Methods and apparatus are provided for enhancing the BIOS of a hardware peripheral device to manage multiple peripheral devices simultaneously without modifying the application software of the peripheral device. The apparatus comprises a logic control unit and a memory in communication with the logic control unit. The memory is partitioned into a plurality of ranges, each range comprising one or more blocks of memory, one range being associated with each instance of the peripheral application and one range being reserved for storage of a data pointer related to each peripheral application of the plurality. The logic control unit is configured to operate multiple instances of the control application by duplicating one instance of the peripheral application for each peripheral device of the plurality and partitioning a memory device into partitions comprising one or more blocks of memory, one partition being associated with each instance of the peripheral application. The method then reserves a range of memory addresses for storage of a data pointer related to each peripheral device of the plurality, and initializes each of the plurality of peripheral devices.

A Philippinite with an Unusually Large Bubble: Gas Pressure and Noble Gas Composition

NASA Astrophysics Data System (ADS)

Matsuda, J.; Maruoka, T.; Pinti, D. L.; Koeberl, C.

1995-09-01

Bubbles are common in tektites, but usually their sizes range up to only a few mm. They are most abundant in Muong Nong-type tektites. The gases contained in these bubbles are of terrestrial atmospheric composition, with pressures below 1 atm (e.g., [1]). The abundances of light noble gases (He, Ne) are controlled by diffusion from the atmosphere [2], and noble gases dissolved in tektite glass indicate that the glass solidified at atmospheric pressures equivalent to about 40 km altitude [3]. Large bubbles in splash-form tektites are rather rare. Thus, the finding that a philippinite (size: 6.0 x 4.5 cm; weight: 199.6 g) contains an unusually large bubble justified a detailed study. The volume of the bubble, which was confirmed by X-ray photography, was estimated at 5.4 cm^3, by comparing the density of this tektite (2.288 g/cm^3) to that of normal philippinites (2.438 g/cm^3). A device was specifically constructed for crushing the present sample under vacuum. The 10x10 cm cylindrical device has a piston that allows to gently crush the sample by turning a handle. Various disk spacers can be used to adjust the inner height to that of the sample. The device is made of stainless steel, yielding a low noble gas blank. The crushing device is connected to a purification line and a noble gas sector-type mass spectrometer (VG 5400) [4]. Before crushing, the complete tektite was wrapped in aluminum foil. A first crushing attempt, using stainless steel disk spacers, failed and resulted in damage to the steel spacers, indicating a high strength of the tektite. Using iron disk spacers resulted in an ambient pressure increase (probably due to hydrogen from the Fe) in the sample chamber. However, the noble gas blanks were negligible. The background pressure, at 2 x 10-4 Torr, increased to 3 x 10-4 Torr when the sample was crushed. From the volume of the crushing device and that of the bubble in the tektite, the total gas pressure in the bubble was estimated at about 1 x 10-4 atm. Part of the extracted gas was kept for total gas analysis, while the remainder has been purified for the noble gas measurements. Total amounts and isotopic ratios of all noble gases were measured. The amounts of Ar, Kr, and Xe close to the blank level, while those of He and Ne were about 3 to 4 orders of magnitude larger than the blank. The ^20Ne/^36Ar ratio in the bubble gas is more than 4 orders of magnitude higher than the atmospheric value, which is similar to the pattern previously observed in tektites [2,3,5]. The isotopic ratios of Ar, Kr and Xe were, within uncertainties, similar to those of the terrestrial atmosphere. However, the Ne isotopic ratios were significantly different from atmospheric values, and differ from the results reported in previous studies [2,5]. The Ne isotope data seem to lie on the mass fractionation line from the atmosphere in a ^20Ne/^22Ne vs. ^21Ne/^22Ne three isotope plot, suggesting that the Ne in the bubble has diffused in from the atmosphere. However, it is generally believed that the isotopic fractionation during a steady state is very small, and the observed Ne values are higher than those calculated from simple mass fractionation [6]. The high isotopic fractionation is likely to be associated with the non-equilibrium conditions prevailing during tektite formation. Acknowledgments: We are grateful to D. Heinlein for bringing the precious sample to our attention and for allowing its analysis. References: [1] Jessberger E. K. and Gentner W. (1972) EPSL, 14, 221-225. [2] Matsubara K. and Matsuda J. (1991) Meteoritics, 26, 217-220. [3] Matsuda J. et al. (1993) Meteoritics, 28, 586-599. [4] Maruoka T. and Matsuda J. (1995) J. Mass Spectrom. Soc. Jpn., 43, 1-8. [5] Hennecke et al. (1975) JGR, 80, 2931-2934. [6] Kaneoka I., EPSL, 48, 284-292.

Robust resistive memory devices using solution-processable metal-coordinated azo aromatics

NASA Astrophysics Data System (ADS)

Goswami, Sreetosh; Matula, Adam J.; Rath, Santi P.; Hedström, Svante; Saha, Surajit; Annamalai, Meenakshi; Sengupta, Debabrata; Patra, Abhijeet; Ghosh, Siddhartha; Jani, Hariom; Sarkar, Soumya; Motapothula, Mallikarjuna Rao; Nijhuis, Christian A.; Martin, Jens; Goswami, Sreebrata; Batista, Victor S.; Venkatesan, T.

2017-12-01

Non-volatile memories will play a decisive role in the next generation of digital technology. Flash memories are currently the key player in the field, yet they fail to meet the commercial demands of scalability and endurance. Resistive memory devices, and in particular memories based on low-cost, solution-processable and chemically tunable organic materials, are promising alternatives explored by the industry. However, to date, they have been lacking the performance and mechanistic understanding required for commercial translation. Here we report a resistive memory device based on a spin-coated active layer of a transition-metal complex, which shows high reproducibility (~350 devices), fast switching (<=30 ns), excellent endurance (~1012 cycles), stability (>106 s) and scalability (down to ~60 nm2). In situ Raman and ultraviolet-visible spectroscopy alongside spectroelectrochemistry and quantum chemical calculations demonstrate that the redox state of the ligands determines the switching states of the device whereas the counterions control the hysteresis. This insight may accelerate the technological deployment of organic resistive memories.

A flexible nonvolatile resistive switching memory device based on ZnO film fabricated on a foldable PET substrate.

PubMed

Sun, Bai; Zhang, Xuejiao; Zhou, Guangdong; Yu, Tian; Mao, Shuangsuo; Zhu, Shouhui; Zhao, Yong; Xia, Yudong

2018-06-15

In this work, a flexible resistive switching memory device based on ZnO film was fabricated using a foldable Polyethylene terephthalate (PET) film as substrate while Ag and Ti acts top and bottom electrode. Our as-prepared device represents an outstanding nonvolatile memory behavior with good "write-read-erase-read" stability at room temperature. Finally, a physical model of Ag conductive filament is constructed to understanding the observed memory characteristics. The work provides a new way for the preparation of flexible memory devices based on ZnO films, and especially provides an experimental basis for the exploration of high-performance and portable nonvolatile resistance random memory (RRAM). Copyright © 2018 Elsevier Inc. All rights reserved.

Error Characterization and Mitigation for 16Nm MLC NAND Flash Memory Under Total Ionizing Dose Effect

NASA Technical Reports Server (NTRS)

Li, Yue (Inventor); Bruck, Jehoshua (Inventor)

2018-01-01

A data device includes a memory having a plurality of memory cells configured to store data values in accordance with a predetermined rank modulation scheme that is optional and a memory controller that receives a current error count from an error decoder of the data device for one or more data operations of the flash memory device and selects an operating mode for data scrubbing in accordance with the received error count and a program cycles count.

Propulsion of Bubble-Based Acoustic Microswimmers

NASA Astrophysics Data System (ADS)

Bertin, Nicolas; Spelman, Tamsin A.; Stephan, Olivier; Gredy, Laetitia; Bouriau, Michel; Lauga, Eric; Marmottant, Philippe

2015-12-01

Acoustic microswimmers present a great potential for microfluidic applications and targeted drug delivery. Here, we introduce armored microbubbles (size range, 10 - 20 μ m ) made by three-dimensional microfabrication, which allows the bubbles to last for hours even under forced oscillations. The acoustic resonance of the armored microbubbles is found to be dictated by capillary forces and not by gas volume, and its measurements agree with a theoretical calculation. We further measure experimentally and predict theoretically the net propulsive flow generated by the bubble vibration. This flow, due to steady streaming in the fluid, can reach 100 mm /s , and is affected by the presence of nearby walls. Finally, microswimmers in motion are shown, either as spinning devices or free swimmers.

Impacts of Co doping on ZnO transparent switching memory device characteristics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Simanjuntak, Firman Mangasa; Wei, Kung-Hwa; Prasad, Om Kumar

2016-05-02

The resistive switching characteristics of indium tin oxide (ITO)/Zn{sub 1−x}Co{sub x}O/ITO transparent resistive memory devices were investigated. An appropriate amount of cobalt dopant in ZnO resistive layer demonstrated sufficient memory window and switching stability. In contrast, pure ZnO devices demonstrated a poor memory window, and using an excessive dopant concentration led to switching instability. To achieve suitable memory performance, relying only on controlling defect concentrations is insufficient; the grain growth orientation of the resistive layer must also be considered. Stable endurance with an ON/OFF ratio of more than one order of magnitude during 5000 cycles confirmed that the Co-doped ZnOmore » device is a suitable candidate for resistive random access memory application. Additionally, fully transparent devices with a high transmittance of up to 90% at wavelength of 550 nm have been fabricated.« less

Flexible non-volatile memory devices based on organic semiconductors

NASA Astrophysics Data System (ADS)

Cosseddu, Piero; Casula, Giulia; Lai, Stefano; Bonfiglio, Annalisa

2015-09-01

The possibility of developing fully organic electronic circuits is critically dependent on the ability to realize a full set of electronic functionalities based on organic devices. In order to complete the scene, a fundamental element is still missing, i.e. reliable data storage. Over the past few years, a considerable effort has been spent on the development and optimization of organic polymer based memory elements. Among several possible solutions, transistor-based memories and resistive switching-based memories are attracting a great interest in the scientific community. In this paper, a route for the fabrication of organic semiconductor-based memory devices with performances beyond the state of the art is reported. Both the families of organic memories will be considered. A flexible resistive memory based on a novel combination of materials is presented. In particular, high retention time in ambient conditions are reported. Complementary, a low voltage transistor-based memory is presented. Low voltage operation is allowed by an hybrid, nano-sized dielectric, which is also responsible for the memory effect in the device. Thanks to the possibility of reproducibly fabricating such device on ultra-thin substrates, high mechanical stability is reported.

Initial Results from On-Orbit Testing of the Fram Memory Test Experiment on the Fastsat Micro-Satellite

NASA Technical Reports Server (NTRS)

MacLeond, Todd C.; Sims, W. Herb; Varnavas,Kosta A.; Ho, Fat D.

2011-01-01

The Memory Test Experiment is a space test of a ferroelectric memory device on a low Earth orbit satellite that launched in November 2010. The memory device being tested is a commercial Ramtron Inc. 512K memory device. The circuit was designed into the satellite avionics and is not used to control the satellite. The test consists of writing and reading data with the ferroelectric based memory device. Any errors are detected and are stored on board the satellite. The data is sent to the ground through telemetry once a day. Analysis of the data can determine the kind of error that was found and will lead to a better understanding of the effects of space radiation on memory systems. The test is one of the first flight demonstrations of ferroelectric memory in a near polar orbit which allows testing in a varied radiation environment. The initial data from the test is presented. This paper details the goals and purpose of this experiment as well as the development process. The process for analyzing the data to gain the maximum understanding of the performance of the ferroelectric memory device is detailed.

The future of memory

NASA Astrophysics Data System (ADS)

Marinella, M.

In the not too distant future, the traditional memory and storage hierarchy of may be replaced by a single Storage Class Memory (SCM) device integrated on or near the logic processor. Traditional magnetic hard drives, NAND flash, DRAM, and higher level caches (L2 and up) will be replaced with a single high performance memory device. The Storage Class Memory paradigm will require high speed (< 100 ns read/write), excellent endurance (> 1012), nonvolatility (retention > 10 years), and low switching energies (< 10 pJ per switch). The International Technology Roadmap for Semiconductors (ITRS) has recently evaluated several potential candidates SCM technologies, including Resistive (or Redox) RAM, Spin Torque Transfer RAM (STT-MRAM), and phase change memory (PCM). All of these devices show potential well beyond that of current flash technologies and research efforts are underway to improve the endurance, write speeds, and scalabilities to be on-par with DRAM. This progress has interesting implications for space electronics: each of these emerging device technologies show excellent resistance to the types of radiation typically found in space applications. Commercially developed, high density storage class memory-based systems may include a memory that is physically radiation hard, and suitable for space applications without major shielding efforts. This paper reviews the Storage Class Memory concept, emerging memory devices, and possible applicability to radiation hardened electronics for space.

Design and Fabrication of Submicron Magnetic Bubble Device Technology.

DTIC Science & Technology

1986-10-31

interface LPE bubble film GGG substrate Figure 2: Cross section of a silicon on garnet magnetodiode. I : R R R/ B>O0 B 0 z V............. ... ..AV dummy...Carnegie Mellon University, Pittsburgh, Pa 15213. Section I Introduction The main thrust of our LPE garnet film growth program is to develop> films ...shown in Table I and the best choice for an isotropic magnetostrictive film is shown by an asterik. Section IM LPE Film Growth Technique All garnet

Proceedings of the Conference on Low Reynolds Number Airfoil Aerodynamics

DTIC Science & Technology

1985-06-01

resulting in a simple bubble prediction method. The effect of tripping devices to decrease the adverse effect of the bubble on drag is discussed ...interacting flows. Of interest is a special form of the steady-state bifurcation , namely, symmetry breaking of an otherwise regular flow about a symmet- ric...Ratio Effects on the Aerodynamics of a Wortmann Airfoil at Low Reynolds Number J.F. Marchman, IIl, A.A. Abtahi and V. Sumantran . . . 183 Performance of

Programmable DMA controller

NASA Technical Reports Server (NTRS)

Hendry, David F. (Inventor)

1993-01-01

In a data system having a memory, plural input/output (I/O) devices and a bus connecting each of the I/O devices to the memory, a direct memory access (DMA) controller regulating access of each of the I/O devices to the bus, including a priority register storing priorities of bus access requests from the I/O devices, an interrupt register storing bus access requests of the I/O devices, a resolver for selecting one of the I/O devices to have access to the bus, a pointer register storing addresses of locations in the memory for communication with the one I/O device via the bus, a sequence register storing an address of a location in the memory containing a channel program instruction which is to be executed next, an ALU for incrementing and decrementing addresses stored in the pointer register, computing the next address to be stored in the sequence register, computing an initial contents of each of the register. The memory contains a sequence of channel program instructions defining a set up operation wherein the contents of each of the registers in the channel register is initialized in accordance with the initial contents computed by the ALU and an access operation wherein data is transferred on the bus between a location in the memory whose address is currently stored in the pointer register and the one I/O device enabled by the resolver.

Nondisruptive Dissolution of Hyperpolarized 129 Xe into Viscous Aqueous and Organic Liquid Crystalline Environments

DOE Office of Scientific and Technical Information (OSTI.GOV)

Truxal, Ashley E.; Slack, Clancy C.; Gomes, Muller D.

2016-03-08

Studies of hyperpolarized xenon-129 in media such as liquid crystals and cell suspensions are in demand for applications ranging from biomedical imaging to materials engineering but have been hindered by the inability to bubble Xe through the desired media as a result of viscosity or perturbations caused by bubbles. This research reports on a device that can be reliably used to dissolve hp- 129 Xe into viscous aqueous and organic samples without bubbling. This method is robust, requires small sample volumes ( < 60 μL), is compatible with existing NMR hardware, and is made from readily available materials. Experiments showmore » that Xe can be introduced into viscous and aligned media without disrupting molecular order. We detected dissolved xenon in an aqueous liquid crystal that is disrupted by the shear forces of bubbling, and we observed liquid-crystal phase transitions in (MBBA). This tool allows an entirely new class of samples to be investigated by hyperpolarized-gas NMR spectroscopy. Blending into the crowd: A new device that facilitates the direct dissolution of hyperpolarized 129 Xe into viscous liquid-crystalline media is presented. 129 Xe and 2 H NMR spectra show the nondisruptive dissolution of xenon, the presence of ordered phases, and, in the case of the thermotropic liquid crystal N-(4-methoxybenzylidene)-4-butylaniline, a nematic-isotropic phase transition.« less

Overview of Probe-based Storage Technologies

NASA Astrophysics Data System (ADS)

Wang, Lei; Yang, Ci Hui; Wen, Jing; Gong, Si Di; Peng, Yuan Xiu

2016-07-01

The current world is in the age of big data where the total amount of global digital data is growing up at an incredible rate. This indeed necessitates a drastic enhancement on the capacity of conventional data storage devices that are, however, suffering from their respective physical drawbacks. Under this circumstance, it is essential to aggressively explore and develop alternative promising mass storage devices, leading to the presence of probe-based storage devices. In this paper, the physical principles and the current status of several different probe storage devices, including thermo-mechanical probe memory, magnetic probe memory, ferroelectric probe memory, and phase-change probe memory, are reviewed in details, as well as their respective merits and weakness. This paper provides an overview of the emerging probe memories potentially for next generation storage device so as to motivate the exploration of more innovative technologies to push forward the development of the probe storage devices.

Overview of Probe-based Storage Technologies.

PubMed

Wang, Lei; Yang, Ci Hui; Wen, Jing; Gong, Si Di; Peng, Yuan Xiu

2016-12-01

The current world is in the age of big data where the total amount of global digital data is growing up at an incredible rate. This indeed necessitates a drastic enhancement on the capacity of conventional data storage devices that are, however, suffering from their respective physical drawbacks. Under this circumstance, it is essential to aggressively explore and develop alternative promising mass storage devices, leading to the presence of probe-based storage devices. In this paper, the physical principles and the current status of several different probe storage devices, including thermo-mechanical probe memory, magnetic probe memory, ferroelectric probe memory, and phase-change probe memory, are reviewed in details, as well as their respective merits and weakness. This paper provides an overview of the emerging probe memories potentially for next generation storage device so as to motivate the exploration of more innovative technologies to push forward the development of the probe storage devices.

Memory effects in a Al/Ti:HfO2/CuPc metal-oxide-semiconductor device

NASA Astrophysics Data System (ADS)

Tripathi, Udbhav; Kaur, Ramneek

2016-05-01

Metal oxide semiconductor structured organic memory device has been successfully fabricated. Ti doped hafnium oxide (Ti:HfO2) nanoparticles has been fabricated by precipitation method and further calcinated at 800 °C. Copper phthalocyanine, a hole transporting material has been utilized as an organic semiconductor. The electrical properties of the fabricated device have been studied by measuring the current-voltage and capacitance-voltage characteristics. The amount of charge stored in the nanoparticles has been calculated by using flat band condition. This simple approach for fabricating MOS memory device has opens up opportunities for the development of next generation memory devices.

Bubble Combustion

NASA Technical Reports Server (NTRS)

Corrigan, Jackie

2004-01-01

A method of energy production that is capable of low pollutant emissions is fundamental to one of the four pillars of NASA s Aeronautics Blueprint: Revolutionary Vehicles. Bubble combustion, a new engine technology currently being developed at Glenn Research Center promises to provide low emissions combustion in support of NASA s vision under the Emissions Element because it generates power, while minimizing the production of carbon dioxide (CO2) and nitrous oxides (NOx), both known to be Greenhouse gases. and allows the use of alternative fuels such as corn oil, low-grade fuels, and even used motor oil. Bubble combustion is analogous to the inverse of spray combustion: the difference between bubble and spray combustion is that spray combustion is spraying a liquid in to a gas to form droplets, whereas bubble combustion involves injecting a gas into a liquid to form gaseous bubbles. In bubble combustion, the process for the ignition of the bubbles takes place on a time scale of less than a nanosecond and begins with acoustic waves perturbing each bubble. This perturbation causes the local pressure to drop below the vapor pressure of the liquid thus producing cavitation in which the bubble diameter grows, and upon reversal of the oscillating pressure field, the bubble then collapses rapidly with the aid of the high surface tension forces acting on the wall of the bubble. The rapid and violent collapse causes the temperatures inside the bubbles to soar as a result of adiabatic heating. As the temperatures rise, the gaseous contents of the bubble ignite with the bubble itself serving as its own combustion chamber. After ignition, this is the time in the bubble s life cycle where power is generated, and CO2, and NOx among other species, are produced. However, the pollutants CO2 and NOx are absorbed into the surrounding liquid. The importance of bubble combustion is that it generates power using a simple and compact device. We conducted a parametric study using CAVCHEM, a computational model developed at Glenn, that simulates the cavitational collapse of a single bubble in a liquid (water) and the subsequent combustion of the gaseous contents inside the bubble. The model solves the time-dependent, compressible Navier-Stokes equations in one-dimension with finite-rate chemical kinetics using the CHEMKIN package. Specifically, parameters such as frequency, pressure, bubble radius, and the equivalence ratio were varied while examining their effect on the maximum temperature, radius, and chemical species. These studies indicate that the radius of the bubble is perhaps the most critical parameter governing bubble combustion dynamics and its efficiency. Based on the results of the parametric studies, we plan on conducting experiments to study the effect of ultrasonic perturbations on the bubble generation process with respect to the bubble radius and size distribution.

Bubble gate for in-plane flow control.

PubMed

Oskooei, Ali; Abolhasani, Milad; Günther, Axel

2013-07-07

We introduce a miniature gate valve as a readily implementable strategy for actively controlling the flow of liquids on-chip, within a footprint of less than one square millimetre. Bubble gates provide for simple, consistent and scalable control of liquid flow in microchannel networks, are compatible with different bulk microfabrication processes and substrate materials, and require neither electrodes nor moving parts. A bubble gate consists of two microchannel sections: a liquid-filled channel and a gas channel that intercepts the liquid channel to form a T-junction. The open or closed state of a bubble gate is determined by selecting between two distinct gas pressure levels: the lower level corresponds to the "open" state while the higher level corresponds to the "closed" state. During closure, a gas bubble penetrates from the gas channel into the liquid, flanked by a column of equidistantly spaced micropillars on each side, until the flow of liquid is completely obstructed. We fabricated bubble gates using single-layer soft lithographic and bulk silicon micromachining procedures and evaluated their performance with a combination of theory and experimentation. We assessed the dynamic behaviour during more than 300 open-and-close cycles and report the operating pressure envelope for different bubble gate configurations and for the working fluids: de-ionized water, ethanol and a biological buffer. We obtained excellent agreement between the experimentally determined bubble gate operational envelope and a theoretical prediction based on static wetting behaviour. We report case studies that serve to illustrate the utility of bubble gates for liquid sampling in single and multi-layer microfluidic devices. Scalability of our strategy was demonstrated by simultaneously addressing 128 bubble gates.

A Strategy to Design High-Density Nanoscale Devices utilizing Vapor Deposition of Metal Halide Perovskite Materials.

PubMed

Hwang, Bohee; Lee, Jang-Sik

2017-08-01

The demand for high memory density has increased due to increasing needs of information storage, such as big data processing and the Internet of Things. Organic-inorganic perovskite materials that show nonvolatile resistive switching memory properties have potential applications as the resistive switching layer for next-generation memory devices, but, for practical applications, these materials should be utilized in high-density data-storage devices. Here, nanoscale memory devices are fabricated by sequential vapor deposition of organolead halide perovskite (OHP) CH 3 NH 3 PbI 3 layers on wafers perforated with 250 nm via-holes. These devices have bipolar resistive switching properties, and show low-voltage operation, fast switching speed (200 ns), good endurance, and data-retention time >10 5 s. Moreover, the use of sequential vapor deposition is extended to deposit CH 3 NH 3 PbI 3 as the memory element in a cross-point array structure. This method to fabricate high-density memory devices could be used for memory cells that occupy large areas, and to overcome the scaling limit of existing methods; it also presents a way to use OHPs to increase memory storage capacity. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Teaching in the Downturn

ERIC Educational Resources Information Center

Holladay, Jennifer

2009-01-01

Few of today's teachers can remember an economic situation quite like the one everyone now faces. To find analogies for the collapse of the housing bubble and the subsequent credit crisis, one has to search not his or her memories but the textbooks. "The Great Gatsby" and "The Grapes of Wrath" suddenly make more sense now. Generations of students…

Teaching in the Downturn

ERIC Educational Resources Information Center

Holladay, Jennifer; Lockette, Tim

2009-01-01

Few of today's teachers can remember an economic situation quite like the one individuals now face. To find analogies for the collapse of the housing bubble and the subsequent credit crisis, they have to search not their memories but their textbooks. "The Great Gatsby" and "The Grapes of Wrath" suddenly make more sense now. What will happen next?…

Neurocognitive stages of spatial cognitive mapping measured during free exploration of a large-scale virtual environment.

PubMed

Plank, Markus; Snider, Joseph; Kaestner, Erik; Halgren, Eric; Poizner, Howard

2015-02-01

Using a novel, fully mobile virtual reality paradigm, we investigated the EEG correlates of spatial representations formed during unsupervised exploration. On day 1, subjects implicitly learned the location of 39 objects by exploring a room and popping bubbles that hid the objects. On day 2, they again popped bubbles in the same environment. In most cases, the objects hidden underneath the bubbles were in the same place as on day 1. However, a varying third of them were misplaced in each block. Subjects indicated their certainty that the object was in the same location as the day before. Compared with bubble pops revealing correctly placed objects, bubble pops revealing misplaced objects evoked a decreased negativity starting at 145 ms, with scalp topography consistent with generation in medial parietal cortex. There was also an increased negativity starting at 515 ms to misplaced objects, with scalp topography consistent with generation in inferior temporal cortex. Additionally, misplaced objects elicited an increase in frontal midline theta power. These findings suggest that the successive neurocognitive stages of processing allocentric space may include an initial template matching, integration of the object within its spatial cognitive map, and memory recall, analogous to the processing negativity N400 and theta that support verbal cognitive maps in humans. Copyright © 2015 the American Physiological Society.

High performance nonvolatile memory devices based on Cu2-xSe nanowires

NASA Astrophysics Data System (ADS)

Wu, Chun-Yan; Wu, Yi-Liang; Wang, Wen-Jian; Mao, Dun; Yu, Yong-Qiang; Wang, Li; Xu, Jun; Hu, Ji-Gang; Luo, Lin-Bao

2013-11-01

We report on the rational synthesis of one-dimensional Cu2-xSe nanowires (NWs) via a solution method. Electrical analysis of Cu2-xSe NWs based memory device exhibits a stable and reproducible bipolar resistive switching behavior with a low set voltage (0.3-0.6 V), which can enable the device to write and erase data efficiently. Remarkably, the memory device has a record conductance switching ratio of 108, much higher than other devices ever reported. At last, a conducting filaments model is introduced to account for the resistive switching behavior. The totality of this study suggests that the Cu2-xSe NWs are promising building blocks for fabricating high-performance and low-consumption nonvolatile memory devices.

AN EFFICIENT TREATMENT STRATEGY FOR HISTOTRIPSY BY REMOVING CAVITATION MEMORY

PubMed Central

Wang, Tzu-Yin; Xu, Zhen; Hall, Timothy L.; Fowlkes, J. Brian; Cain, Charles A.

2012-01-01

Cavitation memory effects occur when remnants of cavitation bubbles (nuclei) persist in the host medium and act as seeds for subsequent events. In pulsed cavitational ultrasound therapy, or histotripsy, this effect may cause cavitation to repeatedly occur at these seeded locations within a target volume, producing inhomogeneous tissue fractionation or requiring an excess number of pulses to completely homogenize the target volume. We hypothesized that by removing the cavitation memory, i.e., the persistent nuclei, the cavitation bubbles could be induced at random locations in response to each pulse; therefore, complete disruption of a tissue volume may be achieved with fewer pulses. To test the hypothesis, the cavitation memory was passively removed by increasing the intervals between successive pulses, Δt, from 2, 10, 20, 50 and 100, to 200 ms. Histotripsy treatments were performed in red blood cell tissue phantoms and ex vivo livers using 1-MHz ultrasound pulses of 10 cycles at P−/P+ pressure of 21/59 MPa. The phantom study allowed for direct visualization of the cavitation patterns and the lesion development process in real time using high-speed photography; the ex vivo tissue study provided validation of the memory effect in real tissues. Results of the phantom study showed an exponential decrease in the correlation coefficient between cavitation patterns in successive pulses from 0.5 ± 0.1 to 0.1 ± 0.1 as Δt increased from 2–200 ms; correspondingly, the lesion was completely fractionated with significantly fewer pulses for longer Δts. In the tissue study, given the same number of therapy pulses, complete and homogeneous tissue fractionation with well-defined lesion boundaries was achieved only for Δt ≥ 100 ms. These results indicated that the removal of the cavitation memory resulted in more efficient treatments and homogeneous lesions. PMID:22402025

Microbubble transport through a bifurcating vessel network with pulsatile flow.

PubMed

Valassis, Doug T; Dodde, Robert E; Esphuniyani, Brijesh; Fowlkes, J Brian; Bull, Joseph L

2012-02-01

Motivated by two-phase microfluidics and by the clinical applications of air embolism and a developmental gas embolotherapy technique, experimental and theoretical models of microbubble transport in pulsatile flow are presented. The one-dimensional time-dependent theoretical model is developed from an unsteady Bernoulli equation that has been modified to include viscous and unsteady effects. Results of both experiments and theory show that roll angle (the angle the plane of the bifurcating network makes with the horizontal) is an important contributor to bubble splitting ratio at each bifurcation within the bifurcating network. When compared to corresponding constant flow, pulsatile flow was shown to produce insignificant changes to the overall splitting ratio of the bubble despite the order one Womersley numbers, suggesting that bubble splitting through the vasculature could be modeled adequately with a more modest constant flow model. However, bubble lodging was affected by the flow pulsatility, and the effects of pulsatile flow were evident in the dependence of splitting ratio of bubble length. The ability of bubbles to remain lodged after reaching a steady state in the bifurcations is promising for the effectiveness of gas embolotherapy to occlude blood flow to tumors, and indicates the importance of understanding where lodging will occur in air embolism. The ability to accurately predict the bubble dynamics in unsteady flow within a bifurcating network is demonstrated and suggests the potential for bubbles in microfluidics devices to encode information in both steady and unsteady aspects of their dynamics.

Defect reduction for semiconductor memory applications using jet and flash imprint lithography

NASA Astrophysics Data System (ADS)

Ye, Zhengmao; Luo, Kang; Lu, Xiaoming; Fletcher, Brian; Liu, Weijun; Xu, Frank; LaBrake, Dwayne; Resnick, Douglas J.; Sreenivasan, S. V.

2012-07-01

Acceptance of imprint lithography for manufacturing will require demonstration that it can attain defect levels commensurate with the defect specifications of high-end memory devices. Defects occurring during imprinting can generally be broken into two categories; random defects and repeating defects. Examples of random defects include fluid phase imprint defects, such as bubbles, and solid phase imprint defects, such as line collapse. Examples of repeater defects include mask fabrication defects and particle induced defects. Previous studies indicated that soft particles cause nonrepeating defects. Hard particles, on the other hand, can cause either permanent resist plugging or mask damage. In a previous study, two specific defect types were examined; random nonfill defects occurring during the resist filling process and repeater defects caused by interactions with particles on the substrate. We attempted to identify the different types of imprint defect types using a mask with line/space patterns at dimensions as small as 26 nm. An Imprio 500 twenty-wafer per hour development tool was used to study the various defect types. The imprint defect density was reduced nearly four orders of magnitude, down to ˜4/cm2 in a period of two years following the availability of low defect imprint masks at 26-nm half-pitch. This reduction was achieved by identifying the root cause of various defects and then taking the appropriate corrective action.

Brownmillerite thin films as fast ion conductors for ultimate-performance resistance switching memory.

PubMed

Acharya, Susant Kumar; Jo, Janghyun; Raveendra, Nallagatlla Venkata; Dash, Umasankar; Kim, Miyoung; Baik, Hionsuck; Lee, Sangik; Park, Bae Ho; Lee, Jae Sung; Chae, Seung Chul; Hwang, Cheol Seong; Jung, Chang Uk

2017-07-27

An oxide-based resistance memory is a leading candidate to replace Si-based flash memory as it meets the emerging specifications for future memory devices. The non-uniformity in the key switching parameters and low endurance in conventional resistance memory devices are preventing its practical application. Here, a novel strategy to overcome the aforementioned challenges has been unveiled by tuning the growth direction of epitaxial brownmillerite SrFeO 2.5 thin films along the SrTiO 3 [111] direction so that the oxygen vacancy channels can connect both the top and bottom electrodes rather directly. The controlled oxygen vacancy channels help reduce the randomness of the conducting filament (CF). The resulting device displayed high endurance over 10 6 cycles, and a short switching time of ∼10 ns. In addition, the device showed very high uniformity in the key switching parameters for device-to-device and within a device. This work demonstrates a feasible example for improving the nanoscale device performance by controlling the atomic structure of a functional oxide layer.

Current developments and clinical applications of bubble technology in Japan: a report from 85th Annual Scientific Meeting of The Japan Society of Ultrasonic in Medicine, Tokyo, 25-27 May, 2012.

PubMed

Achmad, Arifudin; Taketomi-Takahashi, Ayako; Tsushima, Yoshito

2013-06-01

The potentials of bubble technology in ultrasound has been investigated thoroughly in the last decade. Japan has entered as one of the leaders in bubble technology in ultrasound since Sonazoid (Daiichi Sankyo & GE Healthcare) was marketed in 2007. The 85th Annual Scientific Meeting of The Japan Society of Ultrasonics in Medicine held in Tokyo from May 25 to 27, 2012 is where researchers and clinicians from all over Japan presented recent advances and new developments in ultrasound in both the medical and the engineering aspects of this science. Even though bubble technology was originally developed simply to improve the conventional ultrasound imaging, recent discoveries have opened up powerful emerging applications. Bubble technology is the particular topic to be reviewed in this report, including its mechanical advances for molecular imaging, drug/gene delivery device and sonoporation up to its current clinical application for liver cancers and other liver, gastrointestinal, kidney and breast diseases.

He bubble growth and interaction in W nano-tendrils

NASA Astrophysics Data System (ADS)

Smirnov, R. D.; Krasheninnikov, S. I.

2015-11-01

Tungsten plasma-facing components (PFCs) in fusion devices are exposed to variety of extreme plasma conditions, which can lead to alteration of tungsten micro-structure and degradation of the PFCs. In particular, it is known that filamentary nano-structures called fuzz can grow on helium plasma exposed tungsten surfaces. However, mechanism of the fuzz growth is still not fully understood. Existing experimental observations indicate that formation of helium nano-bubbles in tungsten plays essential role in fuzz formation and growth. In this work we investigate mechanisms of growth and interaction of helium bubbles in fuzz-like nano-tendrils using molecular dynamics simulations with LAMMPS code. We show that growth of the bubbles has anisotropic character producing complex stress field in the nano-tendrils with distinct compression and tension regions. We found that formation of large inter-bubble tension regions can cause lateral stretching and bending of the tendrils that consequently lead to their elongation and thinning at the stretching sites. The rate of nano-tendril growth due to the described mechanism is also evaluated from the simulations.

Nonvolatile infrared memory in MoS2/PbS van der Waals heterostructures

PubMed Central

Wen, Yao; Cai, Kaiming; Cheng, Ruiqing; Yin, Lei; Zhang, Yu; Li, Jie; Wang, Zhenxing; Wang, Feng; Wang, Fengmei; Shifa, Tofik Ahmed; Jiang, Chao; Yang, Hyunsoo

2018-01-01

Optoelectronic devices for information storage and processing are at the heart of optical communication technology due to their significant applications in optical recording and computing. The infrared radiations of 850, 1310, and 1550 nm with low energy dissipation in optical fibers are typical optical communication wavebands. However, optoelectronic devices that could convert and store the infrared data into electrical signals, thereby enabling optical data communications, have not yet been realized. We report an infrared memory device using MoS2/PbS van der Waals heterostructures, in which the infrared pulse intrigues a persistent resistance state that hardly relaxes within our experimental time scales (more than 104 s). The device fully retrieves the memory state even after powering off for 3 hours, indicating its potential for nonvolatile storage devices. Furthermore, the device presents a reconfigurable switch of 2000 stable cycles. Supported by a theoretical model with quantitative analysis, we propose that the optical memory and the electrical erasing phenomenon, respectively, originate from the localization of infrared-induced holes in PbS and gate voltage pulse-enhanced tunneling of electrons from MoS2 to PbS. The demonstrated MoS2 heterostructure–based memory devices open up an exciting field for optoelectronic infrared memory and programmable logic devices. PMID:29770356

Resistive switching effect of N-doped MoS2-PVP nanocomposites films for nonvolatile memory devices

NASA Astrophysics Data System (ADS)

Wu, Zijin; Wang, Tongtong; Sun, Changqi; Liu, Peitao; Xia, Baorui; Zhang, Jingyan; Liu, Yonggang; Gao, Daqiang

2017-12-01

Resistive memory technology is very promising in the field of semiconductor memory devices. According to Liu et al, MoS2-PVP nanocomposite can be used as an active layer material for resistive memory devices due to its bipolar resistive switching behavior. Recent studies have also indicated that the doping of N element can reduce the band gap of MoS2 nanosheets, which is conducive to improving the conductivity of the material. Therefore, in this paper, we prepared N-doped MoS2 nanosheets and then fabricated N-doped MoS2-PVP nanocomposite films by spin coating. Finally, the resistive memory [C. Tan et al., Chem. Soc. Rev. 44, 2615 (2015)], device with ITO/N-doped MoS2-PVP/Pt structure was fabricated. Study on the I-V characteristics shows that the device has excellent resistance switching effect. It is worth mentioning that our device possesses a threshold voltage of 0.75 V, which is much better than 3.5 V reported previously for the undoped counterparts. The above research shows that N-doped MoS2-PVP nanocomposite films can be used as the active layer of resistive switching memory devices, and will make the devices have better performance.

Nonvolatile infrared memory in MoS2/PbS van der Waals heterostructures.

PubMed

Wang, Qisheng; Wen, Yao; Cai, Kaiming; Cheng, Ruiqing; Yin, Lei; Zhang, Yu; Li, Jie; Wang, Zhenxing; Wang, Feng; Wang, Fengmei; Shifa, Tofik Ahmed; Jiang, Chao; Yang, Hyunsoo; He, Jun

2018-04-01

Optoelectronic devices for information storage and processing are at the heart of optical communication technology due to their significant applications in optical recording and computing. The infrared radiations of 850, 1310, and 1550 nm with low energy dissipation in optical fibers are typical optical communication wavebands. However, optoelectronic devices that could convert and store the infrared data into electrical signals, thereby enabling optical data communications, have not yet been realized. We report an infrared memory device using MoS 2 /PbS van der Waals heterostructures, in which the infrared pulse intrigues a persistent resistance state that hardly relaxes within our experimental time scales (more than 10 4 s). The device fully retrieves the memory state even after powering off for 3 hours, indicating its potential for nonvolatile storage devices. Furthermore, the device presents a reconfigurable switch of 2000 stable cycles. Supported by a theoretical model with quantitative analysis, we propose that the optical memory and the electrical erasing phenomenon, respectively, originate from the localization of infrared-induced holes in PbS and gate voltage pulse-enhanced tunneling of electrons from MoS 2 to PbS. The demonstrated MoS 2 heterostructure-based memory devices open up an exciting field for optoelectronic infrared memory and programmable logic devices.

General purpose programmable accelerator board

DOEpatents

Robertson, Perry J.; Witzke, Edward L.

2001-01-01

A general purpose accelerator board and acceleration method comprising use of: one or more programmable logic devices; a plurality of memory blocks; bus interface for communicating data between the memory blocks and devices external to the board; and dynamic programming capabilities for providing logic to the programmable logic device to be executed on data in the memory blocks.

76 FR 4375 - In the Matter of Certain MLC Flash Memory Devices and Products Containing Same; Notice of...

Federal Register 2010, 2011, 2012, 2013, 2014

2011-01-25

... INTERNATIONAL TRADE COMMISSION [Investigation No. 337-TA-683] In the Matter of Certain MLC Flash Memory Devices and Products Containing Same; Notice of Commission Determination Not To Review an Initial... the United States after importation of certain MLC flash memory devices and products containing same...

Fabrication and electrical characterization of a MOS memory device containing self-assembled metallic nanoparticles

NASA Astrophysics Data System (ADS)

Sargentis, Ch.; Giannakopoulos, K.; Travlos, A.; Tsamakis, D.

2007-04-01

Floating gate devices with nanoparticles embedded in dielectrics have recently attracted much attention due to the fact that these devices operate as non-volatile memories with high speed, high density and low power consumption. In this paper, memory devices containing gold (Au) nanoparticles have been fabricated using e-gun evaporation. The Au nanoparticles are deposited on a very thin SiO 2 layer and are then fully covered by a HfO 2 layer. The HfO 2 is a high- k dielectric and gives good scalability to the fabricated devices. We studied the effect of the deposition parameters to the size and the shape of the Au nanoparticles using capacitance-voltage and conductance-voltage measurements, we demonstrated that the fabricated device can indeed operate as a low-voltage memory device.

Carrier transport mechanisms of nonvolatile write-once-read-many-times memory devices with InP-ZnS core-shell nanoparticles embedded in a polymethyl methacrylate layer

NASA Astrophysics Data System (ADS)

Ham, Jung Hoon; Oh, Do Hyun; Cho, Sung Hwan; Jung, Jae Hun; Kim, Tae Whan; Ryu, Eui Dock; Kim, Sang Wook

2009-03-01

Current-voltage (I-V) curves at 300 K for Al/InP-ZnS nanoparticles embedded in a polymethyl methacrylate layer/Al devices showed electrical bistability for write-once-read-many-times (WORM) memory devices. From the I-V curves, the ON/OFF ratio for the device with InP-ZnS nanoparticles was significantly larger than that for the device without InP-ZnS nanoparticles, indicative of the existence of charge capture in the InP nanoparticles. The estimated retention time of the ON state for the WORM memory device was more than 10 years. The carrier transport mechanisms for the WORM memory devices are described by using several models to fit the experimental I-V data.

Giant Electroresistance in Edge Metal-Insulator-Metal Tunnel Junctions Induced by Ferroelectric Fringe Fields

PubMed Central

Jung, Sungchul; Jeon, Youngeun; Jin, Hanbyul; Lee, Jung-Yong; Ko, Jae-Hyeon; Kim, Nam; Eom, Daejin; Park, Kibog

2016-01-01

An enormous amount of research activities has been devoted to developing new types of non-volatile memory devices as the potential replacements of current flash memory devices. Theoretical device modeling was performed to demonstrate that a huge change of tunnel resistance in an Edge Metal-Insulator-Metal (EMIM) junction of metal crossbar structure can be induced by the modulation of electric fringe field, associated with the polarization reversal of an underlying ferroelectric layer. It is demonstrated that single three-terminal EMIM/Ferroelectric structure could form an active memory cell without any additional selection devices. This new structure can open up a way of fabricating all-thin-film-based, high-density, high-speed, and low-power non-volatile memory devices that are stackable to realize 3D memory architecture. PMID:27476475

Wide memory window in graphene oxide charge storage nodes

NASA Astrophysics Data System (ADS)

Wang, Shuai; Pu, Jing; Chan, Daniel S. H.; Cho, Byung Jin; Loh, Kian Ping

2010-04-01

Solution-processable, isolated graphene oxide (GO) monolayers have been used as a charge trapping dielectric in TaN gate/Al2O3/isolated GO sheets/SiO2/p-Si memory device (TANOS). The TANOS type structure serves as memory device with the threshold voltage controlled by the amount of charge trapped in the GO sheet. Capacitance-Voltage hysteresis curves reveal a 7.5 V memory window using the sweep voltage of -5-14 V. Thermal reduction in the GO to graphene reduces the memory window to 1.4 V. The unique charge trapping properties of GO points to the potential applications in flexible organic memory devices.

Motion of liquid plugs between vapor bubbles in capillary tubes: a comparison between fluids

NASA Astrophysics Data System (ADS)

Bertossi, Rémi; Ayel, Vincent; Mehta, Balkrishna; Romestant, Cyril; Bertin, Yves; Khandekar, Sameer

2017-11-01

Pulsating heat pipes (PHP) are now well-known devices in which liquid/vapor slug flow oscillates in a capillary tube wound between hot and cold sources. In this context, this paper focuses on the motion of the liquid plug, trapped between vapor bubbles, moving in capillary tubes, to try to better understand the thermo-physical phenomena involved in such devices. This study is divided into three parts. In the first part, an experimental study presents the evolution of the vapor pressure during the evaporation process of a liquid thin film deposited from a liquid plug flowing in a heated capillary tube: it is found that the behavior of the generated and removed vapor can be very different, according to the thermophysical properties of the fluids. In the second part, a transient model allows to compare, in terms of pressure and duration, the motion of a constant-length liquid plug trapped between two bubbles subjected to a constant difference of vapor pressure: the results highlight that the performances of the four fluids are also very different. Finally, a third model that can be considered as an improvement of the second one, is also presented: here, the liquid slug is surrounded by two vapor bubbles, one subjected to evaporation, the pressure in both bubbles is now a result of the calculation. This model still allows comparing the behaviors of the fluid. Even if our models are quite far from a complete model of a real PHP, results do indicate towards the applicability of different fluids as suitable working fluids for PHPs, particularly in terms of the flow instabilities which they generate.

Solution processed molecular floating gate for flexible flash memories

NASA Astrophysics Data System (ADS)

Zhou, Ye; Han, Su-Ting; Yan, Yan; Huang, Long-Biao; Zhou, Li; Huang, Jing; Roy, V. A. L.

2013-10-01

Solution processed fullerene (C60) molecular floating gate layer has been employed in low voltage nonvolatile memory device on flexible substrates. We systematically studied the charge trapping mechanism of the fullerene floating gate for both p-type pentacene and n-type copper hexadecafluorophthalocyanine (F16CuPc) semiconductor in a transistor based flash memory architecture. The devices based on pentacene as semiconductor exhibited both hole and electron trapping ability, whereas devices with F16CuPc trapped electrons alone due to abundant electron density. All the devices exhibited large memory window, long charge retention time, good endurance property and excellent flexibility. The obtained results have great potential for application in large area flexible electronic devices.

Solution processed molecular floating gate for flexible flash memories

PubMed Central

Zhou, Ye; Han, Su-Ting; Yan, Yan; Huang, Long-Biao; Zhou, Li; Huang, Jing; Roy, V. A. L.

2013-01-01

Solution processed fullerene (C60) molecular floating gate layer has been employed in low voltage nonvolatile memory device on flexible substrates. We systematically studied the charge trapping mechanism of the fullerene floating gate for both p-type pentacene and n-type copper hexadecafluorophthalocyanine (F16CuPc) semiconductor in a transistor based flash memory architecture. The devices based on pentacene as semiconductor exhibited both hole and electron trapping ability, whereas devices with F16CuPc trapped electrons alone due to abundant electron density. All the devices exhibited large memory window, long charge retention time, good endurance property and excellent flexibility. The obtained results have great potential for application in large area flexible electronic devices. PMID:24172758

Resonant tunneling based graphene quantum dot memristors.

PubMed

Pan, Xuan; Skafidas, Efstratios

2016-12-08

In this paper, we model two-terminal all graphene quantum dot (GQD) based resistor-type memory devices (memristors). The resistive switching is achieved by resonant electron tunneling. We show that parallel GQDs can be used to create multi-state memory circuits. The number of states can be optimised with additional voltage sources, whilst the noise margin for each state can be controlled by appropriately choosing the branch resistance. A three-terminal GQD device configuration is also studied. The addition of an isolated gate terminal can be used to add further or modify the states of the memory device. The proposed devices provide a promising route towards volatile memory devices utilizing only atomically thin two-dimensional graphene.

Gas separation and bubble behavior at a woven screen

NASA Astrophysics Data System (ADS)

Conrath, Michael; Dreyer, Michael E.

Gas-liquid two phase flows are widespread and in many applications the separation of both phases is necessary. Chemical reactors, water treatment devices or gas-free delivery of liquids like propellant are only some of them. We study the performance of a woven metal screen in respect to its phase separation behavior under static and dynamic conditions. Beside hydraulic screen resistance and static bubble point, our study also comprises the bubble detachment from the screen upon gas breakthrough. Since a woven screen is essentially an array of identical pores, analogies to bubble detachment from a needle can be established. While the bubble point poses an upper limit for pressurized gas at a wetted screen to preclude gas breakthrough, the necessary pressure for growing bubbles to detach from the screen pores a lower limit when breakthrough is already in progress. Based on that inside, the dynamic bubble point effects were constituted that relate to a trapped bubble at such a screen in liquid flow. A trapped is caused to break through the screen by the flow-induced pressure drop across it. Our model includes axially symmetric bubble shapes, degree of coverage of the screen and bubble pressurization due to hydraulic losses in the rest of the circuit. We have built an experiment that consists of a Dutch Twilled woven screen made of stainless steel in a vertical acrylic glass tube. The liquid is silicon oil SF0.65. The screen is suspended perpendicular to the liquid flow which is forced through it at variable flow rate. Controlled injection of air from a needle allows us to examine the ability of the screen to separate gas and liquid along the former mentioned effects. We present experimental data on static bubble point and detachment pressure for breakthrough at different gas supply rates that suggest a useful criterion for reliable static bubble point measurements. Results for the dynamic bubble point are presented that include i) screen pressure drop for different trapped bubble volumes, liquid flow rates and flow-induced compression, ii) typical breakthrough of a trapped bubble at rising liquid flow rate and iii) steady gas supply in steady liquid flow. It shows that our model can explain the experimental observations. One of the interesting findings for the dynamic bubble point is that hydraulic losses in the rest of the circuit will shift the breakthrough of gas to higher liquid flow rates.

Eight-Liter Hydrogen-Deuterium Bubble Chamber in Magnetic Field; VOS MILITROVAYA VODORODNO-DEITERIEVAYA PUZYR'KOVAYA KAMERA V MAGNITNOM POLE

DOE Office of Scientific and Technical Information (OSTI.GOV)

Blokhintseva, T.D.; Vasilenko, A.T.; Grebinnik, V.G.

1961-01-01

A design of an 8-liter hydrogen-deuterium bubble chamber is described, and its operating characteristics are given. The chamber is a metal-glass device with the vertical location of its working volume. The chamber is illuminated by means of a lens. In the expansion system the bellows are used. The magnetic field is 12000 oersted in the working volume. The operating cycle of the chamber does not exceed 2 secs. (auth)

Technology breakthroughs in high performance metal-oxide-semiconductor devices for ultra-high density, low power non-volatile memory applications

NASA Astrophysics Data System (ADS)

Hong, Augustin Jinwoo

Non-volatile memory devices have attracted much attention because data can be retained without power consumption more than a decade. Therefore, non-volatile memory devices are essential to mobile electronic applications. Among state of the art non-volatile memory devices, NAND flash memory has earned the highest attention because of its ultra-high scalability and therefore its ultra-high storage capacity. However, human desire as well as market competition requires not only larger storage capacity but also lower power consumption for longer battery life time. One way to meet this human desire and extend the benefits of NAND flash memory is finding out new materials for storage layer inside the flash memory, which is called floating gate in the state of the art flash memory device. In this dissertation, we study new materials for the floating gate that can lower down the power consumption and increase the storage capacity at the same time. To this end, we employ various materials such as metal nanodot, metal thin film and graphene incorporating complementary-metal-oxide-semiconductor (CMOS) compatible processes. Experimental results show excellent memory effects at relatively low operating voltages. Detailed physics and analysis on experimental results are discussed. These new materials for data storage can be promising candidates for future non-volatile memory application beyond the state of the art flash technologies.

A chiral-based magnetic memory device without a permanent magnet

PubMed Central

Dor, Oren Ben; Yochelis, Shira; Mathew, Shinto P.; Naaman, Ron; Paltiel, Yossi

2013-01-01

Several technologies are currently in use for computer memory devices. However, there is a need for a universal memory device that has high density, high speed and low power requirements. To this end, various types of magnetic-based technologies with a permanent magnet have been proposed. Recent charge-transfer studies indicate that chiral molecules act as an efficient spin filter. Here we utilize this effect to achieve a proof of concept for a new type of chiral-based magnetic-based Si-compatible universal memory device without a permanent magnet. More specifically, we use spin-selective charge transfer through a self-assembled monolayer of polyalanine to magnetize a Ni layer. This magnitude of magnetization corresponds to applying an external magnetic field of 0.4 T to the Ni layer. The readout is achieved using low currents. The presented technology has the potential to overcome the limitations of other magnetic-based memory technologies to allow fabricating inexpensive, high-density universal memory-on-chip devices. PMID:23922081

A chiral-based magnetic memory device without a permanent magnet.

PubMed

Ben Dor, Oren; Yochelis, Shira; Mathew, Shinto P; Naaman, Ron; Paltiel, Yossi

2013-01-01

Several technologies are currently in use for computer memory devices. However, there is a need for a universal memory device that has high density, high speed and low power requirements. To this end, various types of magnetic-based technologies with a permanent magnet have been proposed. Recent charge-transfer studies indicate that chiral molecules act as an efficient spin filter. Here we utilize this effect to achieve a proof of concept for a new type of chiral-based magnetic-based Si-compatible universal memory device without a permanent magnet. More specifically, we use spin-selective charge transfer through a self-assembled monolayer of polyalanine to magnetize a Ni layer. This magnitude of magnetization corresponds to applying an external magnetic field of 0.4 T to the Ni layer. The readout is achieved using low currents. The presented technology has the potential to overcome the limitations of other magnetic-based memory technologies to allow fabricating inexpensive, high-density universal memory-on-chip devices.

Analysis of Screen Channel LAD Bubble Point Tests in Liquid Methane at Elevated Temperature

NASA Technical Reports Server (NTRS)

Hartwig, Jason; McQuillen, John

2012-01-01

This paper examines the effect of varying the liquid temperature and pressure on the bubble point pressure for screen channel Liquid Acquisition Devices in cryogenic liquid methane using gaseous helium across a wide range of elevated pressures and temperatures. Testing of a 325 x 2300 Dutch Twill screen sample was conducted in the Cryogenic Components Lab 7 facility at the NASA Glenn Research Center in Cleveland, Ohio. Test conditions ranged from 105 to 160K and 0.0965 - 1.78 MPa. Bubble point is shown to be a strong function of the liquid temperature and a weak function of the amount of subcooling at the LAD screen. The model predicts well for saturated liquid but under predicts the subcooled data.

Performance Measurement of a Multi-Level/Analog Ferroelectric Memory Device Design

NASA Technical Reports Server (NTRS)

MacLeod, Todd C.; Phillips, Thomas A.; Ho, Fat D.

2007-01-01

Increasing the memory density and utilizing the unique characteristics of ferroelectric devices is important in making ferroelectric memory devices more desirable to the consumer. This paper describes the characterization of a design that allows multiple levels to be stored in a ferroelectric based memory cell. It can be used to store multiple bits or analog values in a high speed nonvolatile memory. The design utilizes the hysteresis characteristic of ferroelectric transistors to store an analog value in the memory cell. The design also compensates for the decay of the polarization of the ferroelectric material over time. This is done by utilizing a pair of ferroelectric transistors to store the data. One transistor is used a reference to determinethe amount of decay that has occurred since the pair was programmed. The second transistor stores the analog value as a polarization value between zero and saturated. The design allows digital data to be stored as multiple bits in each memory cell. The number of bits per cell that can be stored will vary with the decay rate of the ferroelectric transistors and the repeatability of polarization between transistors. This paper presents measurements of an actual prototype memory cell. This prototype is not a complete implementation of a device, but instead, a prototype of the storage and retrieval portion of an actual device. The performance of this prototype is presented with the projected performance of the overall device. This memory design will be useful because it allows higher memory density, compensates for the environmental and ferroelectric aging processes, allows analog values to be directly stored in memory, compensates for the thermal and radiation environments associated with space operations, and relies only on existing technologies.

Optical limiting device and method of preparation thereof

DOEpatents

Wang, Hsing-Lin; Xu, Su; McBranch, Duncan W.

2003-01-01

Optical limiting device and method of preparation thereof. The optical limiting device includes a transparent substrate and at least one homogeneous layer of an RSA material in polyvinylbutyral attached to the substrate. The device may be produced by preparing a solution of an RSA material, preferably a metallophthalocyanine complex, and a solution of polyvinylbutyral, and then mixing the two solutions together to remove air bubbles. The resulting solution is layered onto the substrate and the solvent is evaporated. The method can be used to produce a dual tandem optical limiting device.

Biomaterial-based Memory Device Development by Conducting Metallic DNA

DTIC Science & Technology

2013-05-28

time. Therefore, we have created a multiple-states memory system . This is the first multi-states resistance memory device by using bio-nanowire of the...world. Based on this achievement, logic device and application will be developed in the near future, too. Moreover, by using Ni-DNA detection system ...ions in DNA can change the resistance of Ni-DNA by applying different polar bias and time. Therefore, we have created a multiple-states memory system

Numerical simulations in the development of propellant management devices

NASA Astrophysics Data System (ADS)

Gaulke, Diana; Winkelmann, Yvonne; Dreyer, Michael

Propellant management devices (PMDs) are used for positioning the propellant at the propel-lant port. It is important to provide propellant without gas bubbles. Gas bubbles can inflict cavitation and may lead to system failures in the worst case. Therefore, the reliable operation of such devices must be guaranteed. Testing these complex systems is a very intricate process. Furthermore, in most cases only tests with downscaled geometries are possible. Numerical sim-ulations are used here as an aid to optimize the tests and to predict certain results. Based on these simulations, parameters can be determined in advance and parts of the equipment can be adjusted in order to minimize the number of experiments. In return, the simulations are validated regarding the test results. Furthermore, if the accuracy of the numerical prediction is verified, then numerical simulations can be used for validating the scaling of the experiments. This presentation demonstrates some selected numerical simulations for the development of PMDs at ZARM.

Effect of Shock-Induced Cavitation Bubble Collapse on the damage in the Simulated Perineuronal Net of the Brain.

PubMed

Wu, Yuan-Ting; Adnan, Ashfaq

2017-07-13

The purpose of this study is to conduct modeling and simulation to understand the effect of shock-induced mechanical loading, in the form of cavitation bubble collapse, on damage to the brain's perineuronal nets (PNNs). It is known that high-energy implosion due to cavitation collapse is responsible for corrosion or surface damage in many mechanical devices. In this case, cavitation refers to the bubble created by pressure drop. The presence of a similar damage mechanism in biophysical systems has long being suspected but not well-explored. In this paper, we use reactive molecular dynamics (MD) to simulate the scenario of a shock wave induced cavitation collapse within the perineuronal net (PNN), which is the near-neuron domain of a brain's extracellular matrix (ECM). Our model is focused on the damage in hyaluronan (HA), which is the main structural component of PNN. We have investigated the roles of cavitation bubble location, shockwave intensity and the size of a cavitation bubble on the structural evolution of PNN. Simulation results show that the localized supersonic water hammer created by an asymmetrical bubble collapse may break the hyaluronan. As such, the current study advances current knowledge and understanding of the connection between PNN damage and neurodegenerative disorders.

Space and power efficient hybrid counters array

DOEpatents

Gara, Alan G [Mount Kisco, NY; Salapura, Valentina [Chappaqua, NY

2009-05-12

A hybrid counter array device for counting events. The hybrid counter array includes a first counter portion comprising N counter devices, each counter device for receiving signals representing occurrences of events from an event source and providing a first count value corresponding to a lower order bits of the hybrid counter array. The hybrid counter array includes a second counter portion comprising a memory array device having N addressable memory locations in correspondence with the N counter devices, each addressable memory location for storing a second count value representing higher order bits of the hybrid counter array. A control device monitors each of the N counter devices of the first counter portion and initiates updating a value of a corresponding second count value stored at the corresponding addressable memory location in the second counter portion. Thus, a combination of the first and second count values provide an instantaneous measure of number of events received.

Space and power efficient hybrid counters array

DOEpatents

Gara, Alan G.; Salapura, Valentina

2010-03-30

A hybrid counter array device for counting events. The hybrid counter array includes a first counter portion comprising N counter devices, each counter device for receiving signals representing occurrences of events from an event source and providing a first count value corresponding to a lower order bits of the hybrid counter array. The hybrid counter array includes a second counter portion comprising a memory array device having N addressable memory locations in correspondence with the N counter devices, each addressable memory location for storing a second count value representing higher order bits of the hybrid counter array. A control device monitors each of the N counter devices of the first counter portion and initiates updating a value of a corresponding second count value stored at the corresponding addressable memory location in the second counter portion. Thus, a combination of the first and second count values provide an instantaneous measure of number of events received.

Occupational Survey Report, AFSC 4H0X1 Cardiopulmonary Laboratory

DTIC Science & Technology

2004-02-01

Health Care Systems (CHCS) 63 Devices, Oxygen (O2) Humidification (Bubble) 63 Electrocardiographic Machines 63 Incentive Spirometer 63 Devices...3.63 63 67 2.91 8 E0180 Maintain open airways 6.74 56 60 5.36 18 E0183 Perform bedside spirometry 5.16 31 33 4.54 12 * Mean TE Rating is 3.18

Electrical studies of Ge4Sb1Te5 devices for memory applications

NASA Astrophysics Data System (ADS)

Sangeetha, B. G.; Shylashree, N.

2018-05-01

In this paper, the Ge4Sb1Te5 thin film device preparation and electrical studies for memory devices were carried out. The device was deposited using vapor-evaporation technique. RESET to SET state switching was shown using current-voltage characterization. The current-voltage characterization shows the switching between SET to RESET state and it was found that it requires a low energy for transition. Switching between amorphous to crystalline nature was studied using resistance-voltage characteristics. The endurance showed the effective use of this composition for memory device.

Intermediate memory devices

NASA Technical Reports Server (NTRS)

Basalayev, G. V.; Kmet, A. B.; Rakov, M. A.; Tarasevich, V. A.

1974-01-01

Several methods of transfer and processing of data whose practical implementation requires operational memory devices are described. Devices incorporating multistable elements are proposed and their main parameters are given. The possibility of using the proposed devices for storing information for transmission in space radio communications channels is examined.

Charge Carrier Transport Mechanism Based on Stable Low Voltage Organic Bistable Memory Device.

PubMed

Ramana, V V; Moodley, M K; Kumar, A B V Kiran; Kannan, V

2015-05-01

A solution processed two terminal organic bistable memory device was fabricated utilizing films of polymethyl methacrylate PMMA/ZnO/PMMA on top of ITO coated glass. Electrical characterization of the device structure showed that the two terminal device exhibited favorable switching characteristics with an ON/OFF ratio greater than 1 x 10(4) when the voltage was swept between - 2 V and +3 V. The device maintained its state after removal of the bias voltage. The device did not show degradation after a 1-h retention test at 120 degrees C. The memory functionality was consistent even after fifty cycles of operation. The charge transport switching mechanism is discussed on the basis of carrier transport mechanism and our analysis of the data shows that the charge carrier trans- port mechanism of the device during the writing process can be explained by thermionic emission (TE) and space-charge-limited-current (SCLC) mechanism models while erasing process could be explained by the FN tunneling mechanism. This demonstration provides a class of memory devices with the potential for low-cost, low-power consumption applications, such as a digital memory cell.

High Density Memory Based on Quantum Device Technology

NASA Technical Reports Server (NTRS)

vanderWagt, Paul; Frazier, Gary; Tang, Hao

1995-01-01

We explore the feasibility of ultra-high density memory based on quantum devices. Starting from overall constraints on chip area, power consumption, access speed, and noise margin, we deduce boundaries on single cell parameters such as required operating voltage and standby current. Next, the possible role of quantum devices is examined. Since the most mature quantum device, the resonant tunneling diode (RTD) can easily be integrated vertically, it naturally leads to the issue of 3D integrated memory. We propose a novel method of addressing vertically integrated bistable two-terminal devices, such as resonant tunneling diodes (RTD) and Esaki diodes, that avoids individual physical contacts. The new concept has been demonstrated experimentally in memory cells of field effect transistors (FET's) and stacked RTD's.

Impact of gate work-function on memory characteristics in Al2O3/HfOx/Al2O3/graphene charge-trap memory devices

NASA Astrophysics Data System (ADS)

Lee, Sejoon; Song, Emil B.; Kim, Sungmin; Seo, David H.; Seo, Sunae; Won Kang, Tae; Wang, Kang L.

2012-01-01

Graphene-based non-volatile memory devices composed of a single-layer graphene channel and an Al2O3/HfOx/Al2O3 charge-storage layer exhibit memory functionality. The impact of the gate material's work-function (Φ) on the memory characteristics is investigated using different types of metals [Ti (ΦTi = 4.3 eV) and Ni (ΦNi = 5.2 eV)]. The ambipolar carrier conduction of graphene results in an enlargement of memory window (ΔVM), which is ˜4.5 V for the Ti-gate device and ˜9.1 V for the Ni-gate device. The increase in ΔVM is attributed to the change in the flat-band condition and the suppression of electron back-injection within the gate stack.

A fast and low-power microelectromechanical system-based non-volatile memory device

PubMed Central

Lee, Sang Wook; Park, Seung Joo; Campbell, Eleanor E. B.; Park, Yung Woo

2011-01-01

Several new generation memory devices have been developed to overcome the low performance of conventional silicon-based flash memory. In this study, we demonstrate a novel non-volatile memory design based on the electromechanical motion of a cantilever to provide fast charging and discharging of a floating-gate electrode. The operation is demonstrated by using an electromechanical metal cantilever to charge a floating gate that controls the charge transport through a carbon nanotube field-effect transistor. The set and reset currents are unchanged after more than 11 h constant operation. Over 500 repeated programming and erasing cycles were demonstrated under atmospheric conditions at room temperature without degradation. Multinary bit programming can be achieved by varying the voltage on the cantilever. The operation speed of the device is faster than a conventional flash memory and the power consumption is lower than other memory devices. PMID:21364559

Determination of the mass-transfer coefficient in liquid phase in a stream-bubble contact device

NASA Astrophysics Data System (ADS)

Dmitriev, A. V.; Dmitrieva, O. S.; Madyshev, I. N.

2016-09-01

One of the most effective energy saving technologies is the improvement of existing heat and mass exchange units. A stream-bubble contact device is designed to enhance the operation efficiency of heat and mass exchange units. The stages of the stream-bubble units that are proposed by the authors for the decarbonization process comprise contact devices with equivalent sizes, whose number is determined by the required performance of a unit. This approach to the structural design eliminates the problems that arise upon the transition from laboratory samples to industrial facilities and makes it possible to design the units of any required performance without a decrease in the effectiveness of mass exchange. To choose the optimal design that provides the maximum effectiveness of the mass-exchange processes in units and their intensification, the change of the mass-transfer coefficient is analyzed with the assumption of a number of parameters. The results of the study of the effect of various structural parameters of a stream-bubble contact device on the mass-transfer coefficient in the liquid phase are given. It is proven that the mass-transfer coefficient increases in the liquid phase, in the first place, with the growth of the level of liquid in the contact element, because the rate of the liquid run-off grows in this case and, consequently, the time of surface renewal is reduced; in the second place, with an increase in the slot diameter in the downpipe, because the jet diameter and, accordingly, their section perimeter and the area of the surface that is immersed in liquid increase; and, in the third place, with an increase in the number of slots in the downpipe, because the area of the surface that is immersed in the liquid of the contact element increases. Thus, in order to increase the mass-transfer coefficient in the liquid phase, it is necessary to design the contact elements with a minimum width and a large number of slots and their increased diameter; in this case, the filling degree of contact elements by the liquid must be maximum.

Ferroelectric Memory Devices and a Proposed Standardized Test System Design

DTIC Science & Technology

1992-06-01

positive clock transition. This provides automatic data protection in case of power loss. The device is being evaluated for applications such as automobile ...systems requiring nonvolatile memory and as these systems become more complex, the demand for reprogrammable nonvolatile memory increases. The...complexity and cost in making conventional nonvolatile memory reprogrammable also increases, so the potential for using ferroelectric memory as a replacement

Guide wire extension for shape memory polymer occlusion removal devices

DOEpatents

Maitland, Duncan J [Pleasant Hill, CA; Small, IV, Ward; Hartman, Jonathan [Sacramento, CA

2009-11-03

A flexible extension for a shape memory polymer occlusion removal device. A shape memory polymer instrument is transported through a vessel via a catheter. A flexible elongated unit is operatively connected to the distal end of the shape memory polymer instrument to enhance maneuverability through tortuous paths en route to the occlusion.

76 FR 80964 - Certain Dynamic Random Access Memory Devices, and Products Containing Same; Institution of...

Federal Register 2010, 2011, 2012, 2013, 2014

2011-12-27

... INTERNATIONAL TRADE COMMISSION [Investigation No. 337-TA-821] Certain Dynamic Random Access Memory... importation, and the sale within the United States after importation of certain dynamic random access memory... certain dynamic random access memory devices, and products containing same that infringe one or more of...

Electronic device aspects of neural network memories

NASA Technical Reports Server (NTRS)

Lambe, J.; Moopenn, A.; Thakoor, A. P.

1985-01-01

The basic issues related to the electronic implementation of the neural network model (NNM) for content addressable memories are examined. A brief introduction to the principles of the NNM is followed by an analysis of the information storage of the neural network in the form of a binary connection matrix and the recall capability of such matrix memories based on a hardware simulation study. In addition, materials and device architecture issues involved in the future realization of such networks in VLSI-compatible ultrahigh-density memories are considered. A possible space application of such devices would be in the area of large-scale information storage without mechanical devices.

Solution-processed flexible NiO resistive random access memory device

NASA Astrophysics Data System (ADS)

Kim, Soo-Jung; Lee, Heon; Hong, Sung-Hoon

2018-04-01

Non-volatile memories (NVMs) using nanocrystals (NCs) as active materials can be applied to soft electronic devices requiring a low-temperature process because NCs do not require a heat treatment process for crystallization. In addition, memory devices can be implemented simply by using a patterning technique using a solution process. In this study, a flexible NiO ReRAM device was fabricated using a simple NC patterning method that controls the capillary force and dewetting of a NiO NC solution at low temperature. The switching behavior of a NiO NC based memory was clearly observed by conductive atomic force microscopy (c-AFM).

Investigations on the effects of electrode materials on the device characteristics of ferroelectric memory thin film transistors fabricated on flexible substrates

NASA Astrophysics Data System (ADS)

Yang, Ji-Hee; Yun, Da-Jeong; Seo, Gi-Ho; Kim, Seong-Min; Yoon, Myung-Han; Yoon, Sung-Min

2018-03-01

For flexible memory device applications, we propose memory thin-film transistors using an organic ferroelectric poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] gate insulator and an amorphous In-Ga-Zn-O (a-IGZO) active channel. The effects of electrode materials and their deposition methods on the characteristics of memory devices exploiting the ferroelectric field effect were investigated for the proposed ferroelectric memory thin-film transistors (Fe-MTFTs) at flat and bending states. It was found that the plasma-induced sputtering deposition and mechanical brittleness of the indium-tin oxide (ITO) markedly degraded the ferroelectric-field-effect-driven memory window and bending characteristics of the Fe-MTFTs. The replacement of ITO electrodes with metal aluminum (Al) electrodes prepared by plasma-free thermal evaporation greatly enhanced the memory device characteristics even under bending conditions owing to their mechanical ductility. Furthermore, poly(3,4-ethylenedioxythiophene)-poly(styrene sulfonate) (PEDOT:PSS) was introduced to achieve robust bending performance under extreme mechanical stress. The Fe-MTFTs using PEDOT:PSS source/drain electrodes were successfully fabricated and showed the potential for use as flexible memory devices. The suitable choice of electrode materials employed for the Fe-MTFTs is concluded to be one of the most important control parameters for highly functional flexible Fe-MTFTs.

Solution-Processed Wide-Bandgap Organic Semiconductor Nanostructures Arrays for Nonvolatile Organic Field-Effect Transistor Memory.

PubMed

Li, Wen; Guo, Fengning; Ling, Haifeng; Liu, Hui; Yi, Mingdong; Zhang, Peng; Wang, Wenjun; Xie, Linghai; Huang, Wei

2018-01-01

In this paper, the development of organic field-effect transistor (OFET) memory device based on isolated and ordered nanostructures (NSs) arrays of wide-bandgap (WBG) small-molecule organic semiconductor material [2-(9-(4-(octyloxy)phenyl)-9H-fluoren-2-yl)thiophene]3 (WG 3 ) is reported. The WG 3 NSs are prepared from phase separation by spin-coating blend solutions of WG 3 /trimethylolpropane (TMP), and then introduced as charge storage elements for nonvolatile OFET memory devices. Compared to the OFET memory device with smooth WG 3 film, the device based on WG 3 NSs arrays exhibits significant improvements in memory performance including larger memory window (≈45 V), faster switching speed (≈1 s), stable retention capability (>10 4 s), and reliable switching properties. A quantitative study of the WG 3 NSs morphology reveals that enhanced memory performance is attributed to the improved charge trapping/charge-exciton annihilation efficiency induced by increased contact area between the WG 3 NSs and pentacene layer. This versatile solution-processing approach to preparing WG 3 NSs arrays as charge trapping sites allows for fabrication of high-performance nonvolatile OFET memory devices, which could be applicable to a wide range of WBG organic semiconductor materials. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Model of a Piezoelectric Transducer

NASA Technical Reports Server (NTRS)

Goodenow, Debra

2004-01-01

It's difficult to control liquid and gas in propellant tanks in zero gravity. A possible a design would utilize acoustic liquid manipulation (ALM) technology which uses ultrasonic beams conducted through a liquid and solid media, to push gas bubbles in the liquid to desirable locations. We can propel and control the bubble with acoustic radiation pressure by aiming the acoustic waves on the bubble s surface. This allows us to design a so called smart tank in which the ALM devices transfer the gas to the outer wall of the tank and isolating the liquid in the center. Because the heat transfer rate of a gas is lower of that of the liquid it would substantially decrease boil off and provide of for a longer storage life. The ALM beam is composed of little wavelets which are individual waves that constructively interfere with each other to produce a single, combined acoustic wave front. This is accomplished by using a set of synchronized ultrasound transducers arranged in an array. A slight phase offset of these elements allows us to focus and steer the beam. The device that we are using to produce the acoustic beam is called the piezoelectric transducer. This device converts electrical energy to mechanical energy, which appears in the form of acoustic energy. Therefore the behavior of the device is dependent on both the mechanical characteristics, such as its density, cross-sectional area, and its electrical characteristics, such as, electric flux permittivity and coupling factor. These devices can also be set up in a number of modes which are determined by the way the piezoelectric device is arranged, and the shape of the transducer. For this application we are using the longitudinal or thickness mode for our operation. The transducer also vibrates in the lateral mode, and one of the goals of my project is to decrease the amount of energy lost to the lateral mode. To model the behavior of the transducers I will be using Pspice, electric circuit modeling tool, to determine the transducer's electrical characteristics at the frequency of interest. This will also help me determine the characteristics of an impedance matching network to operate the transducer at its optimum efficiency. For this I will use ABMs (analog behavioral modeling) to model dependent current and voltage sources that represent the transducer. I have also been working on the Labview control software for the phased array used to control the bubbles, and will begin testing on that before the end of my internship.

Write once read many memory device from Tris-8 (-hydroxyquinoline) aluminum and Indium tin oxide nano particles

NASA Astrophysics Data System (ADS)

Aneesh, J.; Predeep, P.

2011-10-01

Consequent to the fast increase in data storage requirements new materials and device structures are explored in a war footing. Organic memory devices are attracting lot of interest among the researchers and are becoming a hot topic of investigations. This study is an attempt to develop a tri-layer organic memory device using indium tin oxide (ITO) nanoparticles as charge trapping middle layer between tris-8(-hydroxyquinoline)aluminum (Alq3) layers employing spin coating technique. Device switching is studied by applying a current-voltage (I-V) sweep. On increasing the applied bias the device switched from the initial high resistance (OFF) state to a low resistance (ON) state at a switch on voltage of around 4 V. ON/OFF ratio is of the order of 100 at a read voltage of 2 V. The device is found to remain in the low resistance state on further scans, showing the applicability of this device as a write once read many times (WORM) memory.

GISAXS modelling of helium-induced nano-bubble formation in tungsten and comparison with TEM

NASA Astrophysics Data System (ADS)

Thompson, Matt; Sakamoto, Ryuichi; Bernard, Elodie; Kirby, Nigel; Kluth, Patrick; Riley, Daniel; Corr, Cormac

2016-05-01

Grazing-incidence small angle x-ray scattering (GISAXS) is a powerful non-destructive technique for the measurement of nano-bubble formation in tungsten under helium plasma exposure. Here, we present a comparative study between transmission electron microscopy (TEM) and GISAXS measurements of nano-bubble formation in tungsten exposed to helium plasma in the Large Helical Device (LHD) fusion experiment. Both techniques are in excellent agreement, suggesting that nano-bubbles range from spheroidal to ellipsoidal, displaying exponential diameter distributions with mean diameters μ=0.68 ± 0.04 nm and μ=0.6 ± 0.1 nm measured by TEM and GISAXS respectively. Depth distributions were also computed, with calculated exponential depth distributions with mean depths of 8.4 ± 0.5 nm and 9.1 ± 0.4 nm for TEM and GISAXS. In GISAXS modelling, spheroidal particles were fitted with an aspect ratio ε=0.7 ± 0.1. The GISAXS model used is described in detail.

Two-dimensional molybdenum disulphide nanosheet-covered metal nanoparticle array as a floating gate in multi-functional flash memories

NASA Astrophysics Data System (ADS)

Han, Su-Ting; Zhou, Ye; Chen, Bo; Zhou, Li; Yan, Yan; Zhang, Hua; Roy, V. A. L.

2015-10-01

Semiconducting two-dimensional materials appear to be excellent candidates for non-volatile memory applications. However, the limited controllability of charge trapping behaviors and the lack of multi-bit storage studies in two-dimensional based memory devices require further improvement for realistic applications. Here, we report a flash memory consisting of metal NPs-molybdenum disulphide (MoS2) as a floating gate by introducing a metal nanoparticle (NP) (Ag, Au, Pt) monolayer underneath the MoS2 nanosheets. Controlled charge trapping and long data retention have been achieved in a metal (Ag, Au, Pt) NPs-MoS2 floating gate flash memory. This controlled charge trapping is hypothesized to be attributed to band bending and a built-in electric field ξbi between the interface of the metal NPs and MoS2. The metal NPs-MoS2 floating gate flash memories were further proven to be multi-bit memory storage devices possessing a 3-bit storage capability and a good retention capability up to 104 s. We anticipate that these findings would provide scientific insight for the development of novel memory devices utilizing an atomically thin two-dimensional lattice structure.Semiconducting two-dimensional materials appear to be excellent candidates for non-volatile memory applications. However, the limited controllability of charge trapping behaviors and the lack of multi-bit storage studies in two-dimensional based memory devices require further improvement for realistic applications. Here, we report a flash memory consisting of metal NPs-molybdenum disulphide (MoS2) as a floating gate by introducing a metal nanoparticle (NP) (Ag, Au, Pt) monolayer underneath the MoS2 nanosheets. Controlled charge trapping and long data retention have been achieved in a metal (Ag, Au, Pt) NPs-MoS2 floating gate flash memory. This controlled charge trapping is hypothesized to be attributed to band bending and a built-in electric field ξbi between the interface of the metal NPs and MoS2. The metal NPs-MoS2 floating gate flash memories were further proven to be multi-bit memory storage devices possessing a 3-bit storage capability and a good retention capability up to 104 s. We anticipate that these findings would provide scientific insight for the development of novel memory devices utilizing an atomically thin two-dimensional lattice structure. Electronic supplementary information (ESI) available: Energy-dispersive X-ray spectroscopy (EDS) spectra of the metal NPs, SEM image of MoS2 on Au NPs, erasing operations of the metal NPs-MoS2 memory device, transfer characteristics of the standard FET devices and Ag NP devices under programming operation, tapping-mode AFM height image of the fabricated MoS2 film for pristine MoS2 flash memory, gate signals used for programming the Au NPs-MoS2 and Pt NPs-MoS2 flash memories, and data levels recorded for 100 sequential cycles. See DOI: 10.1039/c5nr05054e

Three-terminal resistive switching memory in a transparent vertical-configuration device

NASA Astrophysics Data System (ADS)

Ungureanu, Mariana; Llopis, Roger; Casanova, Fèlix; Hueso, Luis E.

2014-01-01

The resistive switching phenomenon has attracted much attention recently for memory applications. It describes the reversible change in the resistance of a dielectric between two non-volatile states by the application of electrical pulses. Typical resistive switching memories are two-terminal devices formed by an oxide layer placed between two metal electrodes. Here, we report on the fabrication and operation of a three-terminal resistive switching memory that works as a reconfigurable logic component and offers an increased logic density on chip. The three-terminal memory device we present is transparent and could be further incorporated in transparent computing electronic technologies.

Organic memory device with self-assembly monolayered aptamer conjugated nanoparticles

NASA Astrophysics Data System (ADS)

Oh, Sewook; Kim, Minkeun; Kim, Yejin; Jung, Hunsang; Yoon, Tae-Sik; Choi, Young-Jin; Jung Kang, Chi; Moon, Myeong-Ju; Jeong, Yong-Yeon; Park, In-Kyu; Ho Lee, Hyun

2013-08-01

An organic memory structure using monolayered aptamer conjugated gold nanoparticles (Au NPs) as charge storage nodes was demonstrated. Metal-pentacene-insulator-semiconductor device was adopted for the non-volatile memory effect through self assembly monolayer of A10-aptamer conjugated Au NPs, which was formed on functionalized insulator surface with prostate-specific membrane antigen protein. The capacitance versus voltage (C-V) curves obtained for the monolayered Au NPs capacitor exhibited substantial flat-band voltage shift (ΔVFB) or memory window of 3.76 V under (+/-)7 V voltage sweep. The memory device format can be potentially expanded to a highly specific capacitive sensor for the aptamer-specific biomolecule detection.

Magneto-Optical Experiments on Rare Earth Garnet Films.

ERIC Educational Resources Information Center

Tanner, B. K.

1980-01-01

Describes experiments in which inexpensive or standard laboratory equipment is used to measure several macroscopic magnetic properties of thin rare earth garnet films used in the manufacture of magnetic bubble devices. (Author/CS)

Terahertz electrical writing speed in an antiferromagnetic memory

PubMed Central

Kašpar, Zdeněk; Campion, Richard P.; Baumgartner, Manuel; Sinova, Jairo; Kužel, Petr; Müller, Melanie; Kampfrath, Tobias

2018-01-01

The speed of writing of state-of-the-art ferromagnetic memories is physically limited by an intrinsic gigahertz threshold. Recently, realization of memory devices based on antiferromagnets, in which spin directions periodically alternate from one atomic lattice site to the next has moved research in an alternative direction. We experimentally demonstrate at room temperature that the speed of reversible electrical writing in a memory device can be scaled up to terahertz using an antiferromagnet. A current-induced spin-torque mechanism is responsible for the switching in our memory devices throughout the 12-order-of-magnitude range of writing speeds from hertz to terahertz. Our work opens the path toward the development of memory-logic technology reaching the elusive terahertz band. PMID:29740601

Removal of nanoaerosol during the bubbling of the salt melt of beryllium and lithium fluorides for the preparation of reactor radioisotopes

NASA Astrophysics Data System (ADS)

Zagnit'ko, A. V.; Chuvilin, D. Yu.

2010-06-01

The parameters of aerosol particles formed in the course of the spontaneous thermal condensation of vapors and bubbling a 66LiF-34BeF2 (mol %) eutectic salt mixture with helium have been studied. For this purpose, a vertical bubbling mode at T ≈ 900 K and an ampule device for obtaining reactor radioisotopes for medical applications were used. The rate of the bulk removal and the chemical composition of aerosols were measured. The size distribution of the aerosol particles was bimodal, and the mass concentration of the particles exceeded by far the maximum permissible concentration (MPC). The characteristics of regenerated nickel multilayer nanofilters for ultrahigh filtration of aerosols from the salt liquid melt were analyzed.

Decentralized safety concept for closed-loop controlled intensive care.

PubMed

Kühn, Jan; Brendle, Christian; Stollenwerk, André; Schweigler, Martin; Kowalewski, Stefan; Janisch, Thorsten; Rossaint, Rolf; Leonhardt, Steffen; Walter, Marian; Kopp, Rüdger

2017-04-01

This paper presents a decentralized safety concept for networked intensive care setups, for which a decentralized network of sensors and actuators is realized by embedded microcontroller nodes. It is evaluated for up to eleven medical devices in a setup for automated acute respiratory distress syndrome (ARDS) therapy. In this contribution we highlight a blood pump supervision as exemplary safety measure, which allows a reliable bubble detection in an extracorporeal blood circulation. The approach is validated with data of animal experiments including 35 bubbles with a size between 0.05 and 0.3 ml. All 18 bubbles with a size down to 0.15 ml are successfully detected. By using hidden Markov models (HMMs) as statistical method the number of necessary sensors can be reduced by two pressure sensors.

Analysis of Screen Channel LAD Bubble Point Tests in Liquid Oxygen at Elevated Temperature

NASA Technical Reports Server (NTRS)

Hartwig, Jason; McQuillen, John

2011-01-01

The purpose of this paper is to examine the key parameters that affect the bubble point pressure for screen channel Liquid Acquisition Devices in cryogenic liquid oxygen at elevated pressures and temperatures. An in depth analysis of the effect of varying temperature, pressure, and pressurization gas on bubble point is presented. Testing of a 200 x 1400 and 325 x 2300 Dutch Twill screen sample was conducted in the Cryogenics Components Lab 7 facility at the NASA Glenn Research Center in Cleveland, Ohio. Test conditions ranged from 92 to 130K and 0.138 - 1.79 MPa. Bubble point is shown to be a strong function of temperature with a secondary dependence on pressure. The pressure dependence is believed to be a function of the amount of evaporation and condensation occurring at the screen. Good agreement exists between data and theory for normally saturated liquid but the model generally under predicts the bubble point in subcooled liquid. Better correlation with the data is obtained by using the liquid temperature at the screen to determine surface tension of the fluid, as opposed to the bulk liquid temperature.

Three dimensional carbon-bubble foams with hierarchical pores for ultra-long cycling life supercapacitors.

PubMed

Wang, Bowen; Zhang, Weigang; Wang, Lei; Wei, Jiake; Bai, Xuedong; Liu, Jingyue; Zhang, Guanhua; Duan, Huigao

2018-07-06

Design and synthesis of integrated, interconnected porous structures are critical to the development of high-performance supercapacitors. We develop a novel and facile synthesis technic to construct three-dimensional carbon-bubble foams with hierarchical pores geometry. The carbon-bubble foams are fabricated by conformally coating, via catalytic decomposition of ethanol, a layer of carbon coating onto the surfaces of pre-formed ZnO foams and then the removal of the ZnO template by a reduction-evaporation process. Both the wall thickness and the pore size can be well tuned by adjusting the catalytic decomposition time and temperature. The as-synthesized carbon-bubble foams electrode retains 90.3% of the initial capacitance even after 70 000 continuous cycles under a high current density of 20 A g -1 , demonstrating excellent long-time electrochemical and cycling stability. The symmetric device displays rate capability retention of 81.8% with the current density increasing from 0.4 to 20 A g -1 . These achieved electrochemical performances originate from the unique structural design of the carbon-bubble foams, which provide not only abundant transport channels for electron and ion but also high active surface area accessible by the electrolyte ions.

Three dimensional carbon-bubble foams with hierarchical pores for ultra-long cycling life supercapacitors

NASA Astrophysics Data System (ADS)

Wang, Bowen; Zhang, Weigang; Wang, Lei; Wei, Jiake; Bai, Xuedong; Liu, Jingyue; Zhang, Guanhua; Duan, Huigao

2018-07-01

Design and synthesis of integrated, interconnected porous structures are critical to the development of high-performance supercapacitors. We develop a novel and facile synthesis technic to construct three-dimensional carbon-bubble foams with hierarchical pores geometry. The carbon-bubble foams are fabricated by conformally coating, via catalytic decomposition of ethanol, a layer of carbon coating onto the surfaces of pre-formed ZnO foams and then the removal of the ZnO template by a reduction-evaporation process. Both the wall thickness and the pore size can be well tuned by adjusting the catalytic decomposition time and temperature. The as-synthesized carbon-bubble foams electrode retains 90.3% of the initial capacitance even after 70 000 continuous cycles under a high current density of 20 A g‑1, demonstrating excellent long-time electrochemical and cycling stability. The symmetric device displays rate capability retention of 81.8% with the current density increasing from 0.4 to 20 A g‑1. These achieved electrochemical performances originate from the unique structural design of the carbon-bubble foams, which provide not only abundant transport channels for electron and ion but also high active surface area accessible by the electrolyte ions.

Bubble pump: scalable strategy for in-plane liquid routing.

PubMed

Oskooei, Ali; Günther, Axel

2015-07-07

We present an on-chip liquid routing technique intended for application in well-based microfluidic systems that require long-term active pumping at low to medium flowrates. Our technique requires only one fluidic feature layer, one pneumatic control line and does not rely on flexible membranes and mechanical or moving parts. The presented bubble pump is therefore compatible with both elastomeric and rigid substrate materials and the associated scalable manufacturing processes. Directed liquid flow was achieved in a microchannel by an in-series configuration of two previously described "bubble gates", i.e., by gas-bubble enabled miniature gate valves. Only one time-dependent pressure signal is required and initiates at the upstream (active) bubble gate a reciprocating bubble motion. Applied at the downstream (passive) gate a time-constant gas pressure level is applied. In its rest state, the passive gate remains closed and only temporarily opens while the liquid pressure rises due to the active gate's reciprocating bubble motion. We have designed, fabricated and consistently operated our bubble pump with a variety of working liquids for >72 hours. Flow rates of 0-5.5 μl min(-1), were obtained and depended on the selected geometric dimensions, working fluids and actuation frequencies. The maximum operational pressure was 2.9 kPa-9.1 kPa and depended on the interfacial tension of the working fluids. Attainable flow rates compared favorably with those of available micropumps. We achieved flow rate enhancements of 30-100% by operating two bubble pumps in tandem and demonstrated scalability of the concept in a multi-well format with 12 individually and uniformly perfused microchannels (variation in flow rate <7%). We envision the demonstrated concept to allow for the consistent on-chip delivery of a wide range of different liquids that may even include highly reactive or moisture sensitive solutions. The presented bubble pump may provide active flow control for analytical and point-of-care diagnostic devices, as well as for microfluidic cells culture and organ-on-chip platforms.

Electrical reliability, multilevel data storage and mechanical stability of MoS2-PMMA nanocomposite-based non-volatile memory device

NASA Astrophysics Data System (ADS)

Bhattacharjee, Snigdha; Sarkar, Pranab Kumar; Prajapat, Manoj; Roy, Asim

2017-07-01

Molybdenum disulfide (MoS2) is of great interest for its applicability in various optoelectronic devices. Here we report the resistive switching properties of polymethylmethacrylate embedding MoS2 nano-crystals. The devices are developed on an ITO-coated PET substrate with copper as the top electrode. Systematic evaluation of resistive switching parameters, on the basis of MoS2 content, suggests non-volatile memory characteristics. A decent ON/OFF ratio, high retention time and long endurance of 3  ×  103, 105 s and 105 cycles are respectively recorded in a device with 1 weight percent (wt%) of MoS2. The bending cyclic measurements confirm the flexibility of the memory devices with good electrical reliability as well as mechanical stability. In addition, multilevel storage has been demonstrated by controlling the current compliance and span of voltage sweeping in the memory device.

Multilevel characteristics and memory mechanisms for nonvolatile memory devices based on CuInS{sub 2} quantum dot-polymethylmethacrylate nanocomposites

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhou, Yang; Yun, Dong Yeol; Kim, Tae Whan, E-mail: twk@hanyang.ac.kr

2014-12-08

Nonvolatile memory devices based on CuInS{sub 2} (CIS) quantum dots (QDs) embedded in a polymethylmethacrylate (PMMA) layer were fabricated using spin-coating method. The memory window widths of the capacitance-voltage (C-V) curves for the Al/CIS QDs embedded in PMMA layer/p-Si devices were 0.3, 0.6, and 1.0 V for sweep voltages of ±3, ±5, and ±7 V, respectively. Capacitance-cycle data demonstrated that the charge-trapping capability of the devices with an ON/OFF ratio value of 2.81 × 10{sup −10} was maintained for 8 × 10{sup 3} cycles without significant degradation and that the extrapolation of the ON/OFF ratio value to 1 × 10{sup 6} cycles converged to 2.40 × 10{sup −10}, indicative ofmore » the good stability of the devices. The memory mechanisms for the devices are described on the basis of the C-V curves and the energy-band diagrams.« less

Surfactant monitoring by foam generation

DOEpatents

Mullen, Ken I.

1997-01-01

A device for monitoring the presence or absence of active surfactant or other surface active agents in a solution or flowing stream based on the formation of foam or bubbles is presented. The device detects the formation of foam with a light beam or conductivity measurement. The height or density of the foam can be correlated to the concentration of the active surfactant present.

NASA Flexible Screen Propellant Management Device (PMD) Demonstration With Cryogenic Liquid

NASA Technical Reports Server (NTRS)

Wollen, Mark; Bakke, Victor; Baker, James

2012-01-01

While evaluating various options for liquid methane and liquid oxygen propellant management for lunar missions, Innovative Engineering Solutions (IES) conceived the flexible screen device as a potential simple alternative to conventional propellant management devices (PMD). An apparatus was designed and fabricated to test flexible screen devices in liquid nitrogen. After resolution of a number of issues (discussed in detail in the paper), a fine mesh screen (325 by 2300 wires per inch) spring return assembly was successfully tested. No significant degradation in the screen bubble point was observed either due to the screen stretching process or due to cyclic fatigue during testing. An estimated 30 to 50 deflection cycles, and approximately 3 to 5 thermal cycles, were performed on the final screen specimen, prior to and between formally recorded testing. These cycles included some "abusive" pressure cycling, where gas or liquid was driven through the screen at rates that produced differential pressures across the screen of several times the bubble point pressure. No obvious performance degradation or other changes were observed over the duration of testing. In summary, it is felt by the author that these simple tests validated the feasibility of the flexible screen PMD concept for use with cryogenic propellants.

Acoustic force measurements on polymer-coated microbubbles in a microfluidic device

PubMed Central

Memoli, Gianluca; Fury, Christopher R.; Baxter, Kate O.; Gélat, Pierre N.; Jones, Philip H.

2017-01-01

This work presents an acoustofluidic device for manipulating coated microbubbles, designed for the simultaneous use of optical and acoustical tweezers. A comprehensive characterization of the acoustic pressure in the device is presented, obtained by the synergic use of different techniques in the range of acoustic frequencies where visual observations showed aggregation of polymer-coated microbubbles. In absence of bubbles, the combined use of laser vibrometry and finite element modelling supported a non-invasive measurement of the acoustic pressure and an enhanced understanding of the system resonances. Calibrated holographic optical tweezers were used for direct measurements of the acoustic forces acting on an isolated microbubble, at low driving pressures, and to confirm the spatial distribution of the acoustic field. This allowed quantitative acoustic pressure measurements by particle tracking, using polystyrene beads, and an evaluation of the related uncertainties. This process facilitated the extension of tracking to microbubbles, which have a negative acoustophoretic contrast factor, allowing acoustic force measurements on bubbles at higher pressures than optical tweezers, highlighting four peaks in the acoustic response of the device. Results and methodologies are relevant to acoustofluidic applications requiring a precise characterization of the acoustic field and, in general, to biomedical applications with microbubbles or deformable particles. PMID:28599556

Nanogap-Engineerable Electromechanical System for Ultralow Power Memory.

PubMed

Zhang, Jian; Deng, Ya; Hu, Xiao; Nshimiyimana, Jean Pierre; Liu, Siyu; Chi, Xiannian; Wu, Pei; Dong, Fengliang; Chen, Peipei; Chu, Weiguo; Zhou, Haiqing; Sun, Lianfeng

2018-02-01

Nanogap engineering of low-dimensional nanomaterials has received considerable interest in a variety of fields, ranging from molecular electronics to memories. Creating nanogaps at a certain position is of vital importance for the repeatable fabrication of the devices. Here, a rational design of nonvolatile memories based on sub-5 nm nanogaped single-walled carbon nanotubes (SWNTs) via the electromechanical motion is reported. The nanogaps are readily realized by electroburning in a partially suspended SWNT device with nanoscale region. The SWNT memory devices are applicable for both metallic and semiconducting SWNTs, resolving the challenge of separation of semiconducting SWNTs from metallic ones. Meanwhile, the memory devices exhibit excellent performance: ultralow writing energy (4.1 × 10 -19 J bit -1 ), ON/OFF ratio of 10 5 , stable switching ON operations, and over 30 h retention time in ambient conditions.

Nonvolatile memory behavior of nanocrystalline cellulose/graphene oxide composite films

NASA Astrophysics Data System (ADS)

Valentini, L.; Cardinali, M.; Fortunati, E.; Kenny, J. M.

2014-10-01

With the continuous advance of modern electronics, the demand for nonvolatile memory cells rapidly grows. In order to develop post-silicon electronic devices, it is necessary to find innovative solutions to the eco-sustainability problem of materials for nonvolatile memory cells. In this work, we realized a resistive memory device based on graphene oxide (GO) and GO/cellulose nanocrystals (CNC) thin films. Aqueous solutions of GO and GO with CNC have been prepared and drop cast between two metal electrodes. Such thin-film based devices showed a transition between low and high conductivity states upon the forward and backward sweeping of an external electric field. This reversible current density transition behavior demonstrates a typical memory characteristic. The obtained results open an easy route for electronic information storage based on the integration of nanocrystalline cellulose onto graphene based devices.

Azurin/CdSe-ZnS-Based Bio-Nano Hybrid Structure for Nanoscale Resistive Memory Device.

PubMed

Yagati, Ajay Kumar; Lee, Taek; Choi, Jeong-Woo

2017-07-15

In the present study, we propose a method for bio-nano hybrid formation by coupling a redox metalloprotein, Azurin, with CdSe-ZnS quantum dot for the development of a nanoscale resistive memory device. The covalent interaction between the two nanomaterials enables a strong and effective binding to form an azurin/CdSe-ZnS hybrid, and also enabled better controllability to couple with electrodes to examine the memory function properties. Morphological and optical properties were performed to confirm both hybrid formations and also their individual components. Current-Voltage (I-V) measurements on the hybrid nanostructures exhibited bistable current levels towards the memory function device, that and those characteristics were unnoticeable on individual nanomaterials. The hybrids showed good retention characteristics with high stability and durability, which is a promising feature for future nanoscale memory devices.

Nanogap‐Engineerable Electromechanical System for Ultralow Power Memory

PubMed Central

Zhang, Jian; Deng, Ya; Hu, Xiao; Nshimiyimana, Jean Pierre; Liu, Siyu; Chi, Xiannian; Wu, Pei; Dong, Fengliang; Chen, Peipei

2017-01-01

Abstract Nanogap engineering of low‐dimensional nanomaterials has received considerable interest in a variety of fields, ranging from molecular electronics to memories. Creating nanogaps at a certain position is of vital importance for the repeatable fabrication of the devices. Here, a rational design of nonvolatile memories based on sub‐5 nm nanogaped single‐walled carbon nanotubes (SWNTs) via the electromechanical motion is reported. The nanogaps are readily realized by electroburning in a partially suspended SWNT device with nanoscale region. The SWNT memory devices are applicable for both metallic and semiconducting SWNTs, resolving the challenge of separation of semiconducting SWNTs from metallic ones. Meanwhile, the memory devices exhibit excellent performance: ultralow writing energy (4.1 × 10−19 J bit−1), ON/OFF ratio of 105, stable switching ON operations, and over 30 h retention time in ambient conditions. PMID:29619307

Ordering of guarded and unguarded stores for no-sync I/O

DOEpatents

Gara, Alan; Ohmacht, Martin

2013-06-25

A parallel computing system processes at least one store instruction. A first processor core issues a store instruction. A first queue, associated with the first processor core, stores the store instruction. A second queue, associated with a first local cache memory device of the first processor core, stores the store instruction. The first processor core updates first data in the first local cache memory device according to the store instruction. The third queue, associated with at least one shared cache memory device, stores the store instruction. The first processor core invalidates second data, associated with the store instruction, in the at least one shared cache memory. The first processor core invalidates third data, associated with the store instruction, in other local cache memory devices of other processor cores. The first processor core flushing only the first queue.

Electrically Variable Resistive Memory Devices

NASA Technical Reports Server (NTRS)

Liu, Shangqing; Wu, Nai-Juan; Ignatiev, Alex; Charlson, E. J.

2010-01-01

Nonvolatile electronic memory devices that store data in the form of electrical- resistance values, and memory circuits based on such devices, have been invented. These devices and circuits exploit an electrically-variable-resistance phenomenon that occurs in thin films of certain oxides that exhibit the colossal magnetoresistive (CMR) effect. It is worth emphasizing that, as stated in the immediately preceding article, these devices function at room temperature and do not depend on externally applied magnetic fields. A device of this type is basically a thin film resistor: it consists of a thin film of a CMR material located between, and in contact with, two electrical conductors. The application of a short-duration, low-voltage current pulse via the terminals changes the electrical resistance of the film. The amount of the change in resistance depends on the size of the pulse. The direction of change (increase or decrease of resistance) depends on the polarity of the pulse. Hence, a datum can be written (or a prior datum overwritten) in the memory device by applying a pulse of size and polarity tailored to set the resistance at a value that represents a specific numerical value. To read the datum, one applies a smaller pulse - one that is large enough to enable accurate measurement of resistance, but small enough so as not to change the resistance. In writing, the resistance can be set to any value within the dynamic range of the CMR film. Typically, the value would be one of several discrete resistance values that represent logic levels or digits. Because the number of levels can exceed 2, a memory device of this type is not limited to binary data. Like other memory devices, devices of this type can be incorporated into a memory integrated circuit by laying them out on a substrate in rows and columns, along with row and column conductors for electrically addressing them individually or collectively.

Signal and noise extraction from analog memory elements for neuromorphic computing.

PubMed

Gong, N; Idé, T; Kim, S; Boybat, I; Sebastian, A; Narayanan, V; Ando, T

2018-05-29

Dense crossbar arrays of non-volatile memory (NVM) can potentially enable massively parallel and highly energy-efficient neuromorphic computing systems. The key requirements for the NVM elements are continuous (analog-like) conductance tuning capability and switching symmetry with acceptable noise levels. However, most NVM devices show non-linear and asymmetric switching behaviors. Such non-linear behaviors render separation of signal and noise extremely difficult with conventional characterization techniques. In this study, we establish a practical methodology based on Gaussian process regression to address this issue. The methodology is agnostic to switching mechanisms and applicable to various NVM devices. We show tradeoff between switching symmetry and signal-to-noise ratio for HfO 2 -based resistive random access memory. Then, we characterize 1000 phase-change memory devices based on Ge 2 Sb 2 Te 5 and separate total variability into device-to-device variability and inherent randomness from individual devices. These results highlight the usefulness of our methodology to realize ideal NVM devices for neuromorphic computing.

A Generalized Eulerian-Lagrangian Analysis, with Application to Liquid Flows with Vapor Bubbles

NASA Technical Reports Server (NTRS)

Dejong, Frederik J.; Meyyappan, Meyya

1993-01-01

Under a NASA MSFC SBIR Phase 2 effort an analysis has been developed for liquid flows with vapor bubbles such as those in liquid rocket engine components. The analysis is based on a combined Eulerian-Lagrangian technique, in which Eulerian conservation equations are solved for the liquid phase, while Lagrangian equations of motion are integrated in computational coordinates for the vapor phase. The novel aspect of the Lagrangian analysis developed under this effort is that it combines features of the so-called particle distribution approach with those of the so-called particle trajectory approach and can, in fact, be considered as a generalization of both of those traditional methods. The result of this generalization is a reduction in CPU time and memory requirements. Particle time step (stability) limitations have been eliminated by semi-implicit integration of the particle equations of motion (and, for certain applications, the particle temperature equation), although practical limitations remain in effect for reasons of accuracy. The analysis has been applied to the simulation of cavitating flow through a single-bladed section of a labyrinth seal. Models for the simulation of bubble formation and growth have been included, as well as models for bubble drag and heat transfer. The results indicate that bubble formation is more or less 'explosive'. for a given flow field, the number density of bubble nucleation sites is very sensitive to the vapor properties and the surface tension. The bubble motion, on the other hand, is much less sensitive to the properties, but is affected strongly by the local pressure gradients in the flow field. In situations where either the material properties or the flow field are not known with sufficient accuracy, parametric studies can be carried out rapidly to assess the effect of the important variables. Future work will include application of the analysis to cavitation in inducer flow fields.

Novel synaptic memory device for neuromorphic computing

NASA Astrophysics Data System (ADS)

Mandal, Saptarshi; El-Amin, Ammaarah; Alexander, Kaitlyn; Rajendran, Bipin; Jha, Rashmi

2014-06-01

This report discusses the electrical characteristics of two-terminal synaptic memory devices capable of demonstrating an analog change in conductance in response to the varying amplitude and pulse-width of the applied signal. The devices are based on Mn doped HfO2 material. The mechanism behind reconfiguration was studied and a unified model is presented to explain the underlying device physics. The model was then utilized to show the application of these devices in speech recognition. A comparison between a 20 nm × 20 nm sized synaptic memory device with that of a state-of-the-art VLSI SRAM synapse showed ~10× reduction in area and >106 times reduction in the power consumption per learning cycle.

Mixing device for materials with large density differences

DOEpatents

Gregg, David W.

1994-01-01

An auger-tube pump mixing device for mixing materials with large density differences while maintaining low stirring RPM and low power consumption. The mixing device minimizes the formation of vortexes and minimizes the incorporation of small bubbles in the liquid during mixing. By avoiding the creation of a vortex the device provides efficient stirring of full containers without spillage over the edge. Also, the device solves the problem of effective mixing in vessels where the liquid height is large compared to the diameter. Because of the gentle stirring or mixing by the device, it has application for biomedical uses where cell damage is to be avoided.

Mixing device for materials with large density differences

DOEpatents

Gregg, D.W.

1994-08-16

An auger-tube pump mixing device is disclosed for mixing materials with large density differences while maintaining low stirring RPM and low power consumption. The mixing device minimizes the formation of vortexes and minimizes the incorporation of small bubbles in the liquid during mixing. By avoiding the creation of a vortex the device provides efficient stirring of full containers without spillage over the edge. Also, the device solves the problem of effective mixing in vessels where the liquid height is large compared to the diameter. Because of the gentle stirring or mixing by the device, it has application for biomedical uses where cell damage is to be avoided. 2 figs.

Lab-on-a-bubble: direct and indirect assays with portable Raman instrumentation

NASA Astrophysics Data System (ADS)

Carron, Keith; Schmit, Virginia; Scott, Brandon; Martoglio, Richard

2012-10-01

Lab-on-a-Bubble (LoB) is a new method for SERS (Surface Enhanced Raman Scattering) assays that combines separationand concentration of the assay results. A direct LoB assay is comprised of gold nanoparticles coupled directly to the ~30 μm diameter buoyant silica bubble. The direct LoB method was evaluated with cyanide and 5,5'-dithiobis(2-nitrobenzoic acid) (DTNB). An indirect assay uses the same ~ 30 μm diameter buoyant silica bubble and a silica coated SERS reporter. Both the bubble and SERS reporter are coated with a coupling agent for the analyte. The assay measures the amount of SERS reporter coupled to the bubble through a sandwich created by the analyte. The couling agent could consist of an immunological coupling agent (antibody) or a nucleic acid coupling agent (single strand DNA). The indirect LoB method was examined with Cholera toxin (CT) and antibodies against the β subunit. An LOD of ~ 170 pptrillion was measured for cyanide and a limit of detection of 1100 ng was found for CT. Instrumentation for the assay and a novel technique of dynamic SERS (DSERS) will also be discussed. The instrument is a small hand-held Raman device called the CBEx (Chemical Biological Explosive) with a novel raster system to detect heterogeneous or light sensitive materials. DSERS is a mathematical algorithm which eliminates background interference in SERS measurements with colloidal nanoparticles.

Fabrication of InGaZnO Nonvolatile Memory Devices at Low Temperature of 150 degrees C for Applications in Flexible Memory Displays and Transparency Coating on Plastic Substrates.

PubMed

Hanh, Nguyen Hong; Jang, Kyungsoo; Yi, Junsin

2016-05-01

We directly deposited amorphous InGaZnO (a-IGZO) nonvolatile memory (NVM) devices with oxynitride-oxide-dioxide (OOO) stack structures on plastic substrate by a DC pulsed magnetron sputtering and inductively coupled plasma chemical vapor deposition (ICPCVD) system, using a low-temperature of 150 degrees C. The fabricated bottom gate a-IGZO NVM devices have a wide memory window with a low operating voltage during programming and erasing, due to an effective control of the gate dielectrics. In addition, after ten years, the memory device retains a memory window of over 73%, with a programming duration of only 1 ms. Moreover, the a-IGZO films show high optical transmittance of over 85%, and good uniformity with a root mean square (RMS) roughness of 0.26 nm. This film is a promising candidate to achieve flexible displays and transparency on plastic substrates because of the possibility of low-temperature deposition, and the high transparent properties of a-IGZO films. These results demonstrate that the a-IGZO NVM devices obtained at low-temperature have a suitable programming and erasing efficiency for data storage under low-voltage conditions, in combination with excellent charge retention characteristics, and thus show great potential application in flexible memory displays.

Data storage technology comparisons

NASA Technical Reports Server (NTRS)

Katti, Romney R.

1990-01-01

The role of data storage and data storage technology is an integral, though conceptually often underestimated, portion of data processing technology. Data storage is important in the mass storage mode in which generated data is buffered for later use. But data storage technology is also important in the data flow mode when data are manipulated and hence required to flow between databases, datasets and processors. This latter mode is commonly associated with memory hierarchies which support computation. VLSI devices can reasonably be defined as electronic circuit devices such as channel and control electronics as well as highly integrated, solid-state devices that are fabricated using thin film deposition technology. VLSI devices in both capacities play an important role in data storage technology. In addition to random access memories (RAM), read-only memories (ROM), and other silicon-based variations such as PROM's, EPROM's, and EEPROM's, integrated devices find their way into a variety of memory technologies which offer significant performance advantages. These memory technologies include magnetic tape, magnetic disk, magneto-optic disk, and vertical Bloch line memory. In this paper, some comparison between selected technologies will be made to demonstrate why more than one memory technology exists today, based for example on access time and storage density at the active bit and system levels.

Functionalized Graphitic Carbon Nitride for Metal-free, Flexible and Rewritable Nonvolatile Memory Device via Direct Laser-Writing

NASA Astrophysics Data System (ADS)

Zhao, Fei; Cheng, Huhu; Hu, Yue; Song, Long; Zhang, Zhipan; Jiang, Lan; Qu, Liangti

2014-07-01

Graphitic carbon nitride nanosheet (g-C3N4-NS) has layered structure similar with graphene nanosheet and presents unusual physicochemical properties due to the s-triazine fragments. But their electronic and electrochemical applications are limited by the relatively poor conductivity. The current work provides the first example that atomically thick g-C3N4-NSs are the ideal candidate as the active insulator layer with tunable conductivity for achieving the high performance memory devices with electrical bistability. Unlike in conventional memory diodes, the g-C3N4-NSs based devices combined with graphene layer electrodes are flexible, metal-free and low cost. The functionalized g-C3N4-NSs exhibit desirable dispersibility and dielectricity which support the all-solution fabrication and high performance of the memory diodes. Moreover, the flexible memory diodes are conveniently fabricated through the fast laser writing process on graphene oxide/g-C3N4-NSs/graphene oxide thin film. The obtained devices not only have the nonvolatile electrical bistability with great retention and endurance, but also show the rewritable memory effect with a reliable ON/OFF ratio of up to 105, which is the highest among all the metal-free flexible memory diodes reported so far, and even higher than those of metal-containing devices.

Garnet Random-Access Memory

NASA Technical Reports Server (NTRS)

Katti, Romney R.

1995-01-01

Random-access memory (RAM) devices of proposed type exploit magneto-optical properties of magnetic garnets exhibiting perpendicular anisotropy. Magnetic writing and optical readout used. Provides nonvolatile storage and resists damage by ionizing radiation. Because of basic architecture and pinout requirements, most likely useful as small-capacity memory devices.

Development of Curie point switching for thin film, random access, memory device

NASA Technical Reports Server (NTRS)

Lewicki, G. W.; Tchernev, D. I.

1967-01-01

Managanese bismuthide films are used in the development of a random access memory device of high packing density and nondestructive readout capability. Memory entry is by Curie point switching using a laser beam. Readout is accomplished by microoptical or micromagnetic scanning.

Inserting Thienyl Linkers into Conjugated Molecules for Efficient Multilevel Electronic Memory: A New Understanding of Charge-Trapping in Organic Materials.

PubMed

Li, Yang; Li, Hua; He, Jinghui; Xu, Qingfeng; Li, Najun; Chen, Dongyun; Lu, Jianmei

2016-03-18

The practical application of organic memory devices requires low power consumption and reliable device quality. Herein, we report that inserting thienyl units into D-π-A molecules can improve these parameters by tuning the texture of the film. Theoretical calculations revealed that introducing thienyl π bridges increased the planarity of the molecular backbone and extended the D-A conjugation. Thus, molecules with more thienyl spacers showed improved stacking and orientation in the film state relative to the substrates. The corresponding sandwiched memory devices showed enhanced ternary memory behavior, with lower threshold voltages and better repeatability. The conductive switching and variation in the performance of the memory devices were interpreted by using an extended-charge-trapping mechanism. Our study suggests that judicious molecular engineering can facilitate control of the orientation of the crystallite in the solid state to achieve superior multilevel memory performance. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Programmable digital memory devices based on nanoscale thin films of a thermally dimensionally stable polyimide

NASA Astrophysics Data System (ADS)

Lee, Taek Joon; Chang, Cha-Wen; Hahm, Suk Gyu; Kim, Kyungtae; Park, Samdae; Kim, Dong Min; Kim, Jinchul; Kwon, Won-Sang; Liou, Guey-Sheng; Ree, Moonhor

2009-04-01

We have fabricated electrically programmable memory devices with thermally and dimensionally stable poly(N-(N',N'-diphenyl-N'-1,4-phenyl)-N,N-4,4'-diphenylene hexafluoroisopropylidene-diphthalimide) (6F-2TPA PI) films and investigated their switching characteristics and reliability. 6F-2TPA PI films were found to reveal a conductivity of 1.0 × 10-13-1.0 × 10-14 S cm-1. The 6F-2TPA PI films exhibit versatile memory characteristics that depend on the film thickness. All the PI films are initially present in the OFF state. The PI films with a thickness of >15 to <100 nm exhibit excellent write-once-read-many-times (WORM) (i.e. fuse-type) memory characteristics with and without polarity depending on the thickness. The WORM memory devices are electrically stable, even in air ambient, for a very long time. The devices' ON/OFF current ratio is high, up to 1010. Therefore, these WORM memory devices can provide an efficient, low-cost means of permanent data storage. On the other hand, the 100 nm thick PI films exhibit excellent dynamic random access memory (DRAM) characteristics with polarity. The ON/OFF current ratio of the DRAM devices is as high as 1011. The observed electrical switching behaviors were found to be governed by trap-limited space-charge-limited conduction and local filament formation and further dependent on the differences between the highest occupied molecular orbital and the lowest unoccupied molecular orbital energy levels of the PI film and the work functions of the top and bottom electrodes as well as the PI film thickness. In summary, the excellent memory properties of 6F-2TPA PI make it a promising candidate material for the low-cost mass production of high density and very stable digital nonvolatile WORM and volatile DRAM memory devices.

Programmable digital memory devices based on nanoscale thin films of a thermally dimensionally stable polyimide.

PubMed

Lee, Taek Joon; Chang, Cha-Wen; Hahm, Suk Gyu; Kim, Kyungtae; Park, Samdae; Kim, Dong Min; Kim, Jinchul; Kwon, Won-Sang; Liou, Guey-Sheng; Ree, Moonhor

2009-04-01

We have fabricated electrically programmable memory devices with thermally and dimensionally stable poly(N-(N',N'-diphenyl-N'-1,4-phenyl)-N,N-4,4'-diphenylene hexafluoroisopropylidene-diphthalimide) (6F-2TPA PI) films and investigated their switching characteristics and reliability. 6F-2TPA PI films were found to reveal a conductivity of 1.0 x 10(-13)-1.0 x 10(-14) S cm(-1). The 6F-2TPA PI films exhibit versatile memory characteristics that depend on the film thickness. All the PI films are initially present in the OFF state. The PI films with a thickness of >15 to <100 nm exhibit excellent write-once-read-many-times (WORM) (i.e. fuse-type) memory characteristics with and without polarity depending on the thickness. The WORM memory devices are electrically stable, even in air ambient, for a very long time. The devices' ON/OFF current ratio is high, up to 10(10). Therefore, these WORM memory devices can provide an efficient, low-cost means of permanent data storage. On the other hand, the 100 nm thick PI films exhibit excellent dynamic random access memory (DRAM) characteristics with polarity. The ON/OFF current ratio of the DRAM devices is as high as 10(11). The observed electrical switching behaviors were found to be governed by trap-limited space-charge-limited conduction and local filament formation and further dependent on the differences between the highest occupied molecular orbital and the lowest unoccupied molecular orbital energy levels of the PI film and the work functions of the top and bottom electrodes as well as the PI film thickness. In summary, the excellent memory properties of 6F-2TPA PI make it a promising candidate material for the low-cost mass production of high density and very stable digital nonvolatile WORM and volatile DRAM memory devices.

Design and fabrication of memory devices based on nanoscale polyoxometalate clusters

NASA Astrophysics Data System (ADS)

Busche, Christoph; Vilà-Nadal, Laia; Yan, Jun; Miras, Haralampos N.; Long, De-Liang; Georgiev, Vihar P.; Asenov, Asen; Pedersen, Rasmus H.; Gadegaard, Nikolaj; Mirza, Muhammad M.; Paul, Douglas J.; Poblet, Josep M.; Cronin, Leroy

2014-11-01

Flash memory devices--that is, non-volatile computer storage media that can be electrically erased and reprogrammed--are vital for portable electronics, but the scaling down of metal-oxide-semiconductor (MOS) flash memory to sizes of below ten nanometres per data cell presents challenges. Molecules have been proposed to replace MOS flash memory, but they suffer from low electrical conductivity, high resistance, low device yield, and finite thermal stability, limiting their integration into current MOS technologies. Although great advances have been made in the pursuit of molecule-based flash memory, there are a number of significant barriers to the realization of devices using conventional MOS technologies. Here we show that core-shell polyoxometalate (POM) molecules can act as candidate storage nodes for MOS flash memory. Realistic, industry-standard device simulations validate our approach at the nanometre scale, where the device performance is determined mainly by the number of molecules in the storage media and not by their position. To exploit the nature of the core-shell POM clusters, we show, at both the molecular and device level, that embedding [(Se(IV)O3)2]4- as an oxidizable dopant in the cluster core allows the oxidation of the molecule to a [Se(V)2O6]2- moiety containing a {Se(V)-Se(V)} bond (where curly brackets indicate a moiety, not a molecule) and reveals a new 5+ oxidation state for selenium. This new oxidation state can be observed at the device level, resulting in a new type of memory, which we call `write-once-erase'. Taken together, these results show that POMs have the potential to be used as a realistic nanoscale flash memory. Also, the configuration of the doped POM core may lead to new types of electrical behaviour. This work suggests a route to the practical integration of configurable molecules in MOS technologies as the lithographic scales approach the molecular limit.

Low latency counter event indication

DOEpatents

Gara, Alan G [Mount Kisco, NY; Salapura, Valentina [Chappaqua, NY

2008-09-16

A hybrid counter array device for counting events with interrupt indication includes a first counter portion comprising N counter devices, each for counting signals representing event occurrences and providing a first count value representing lower order bits. An overflow bit device associated with each respective counter device is additionally set in response to an overflow condition. The hybrid counter array includes a second counter portion comprising a memory array device having N addressable memory locations in correspondence with the N counter devices, each addressable memory location for storing a second count value representing higher order bits. An operatively coupled control device monitors each associated overflow bit device and initiates incrementing a second count value stored at a corresponding memory location in response to a respective overflow bit being set. The incremented second count value is compared to an interrupt threshold value stored in a threshold register, and, when the second counter value is equal to the interrupt threshold value, a corresponding "interrupt arm" bit is set to enable a fast interrupt indication. On a subsequent roll-over of the lower bits of that counter, the interrupt will be fired.

Low latency counter event indication

DOEpatents

Gara, Alan G.; Salapura, Valentina

2010-08-24

A hybrid counter array device for counting events with interrupt indication includes a first counter portion comprising N counter devices, each for counting signals representing event occurrences and providing a first count value representing lower order bits. An overflow bit device associated with each respective counter device is additionally set in response to an overflow condition. The hybrid counter array includes a second counter portion comprising a memory array device having N addressable memory locations in correspondence with the N counter devices, each addressable memory location for storing a second count value representing higher order bits. An operatively coupled control device monitors each associated overflow bit device and initiates incrementing a second count value stored at a corresponding memory location in response to a respective overflow bit being set. The incremented second count value is compared to an interrupt threshold value stored in a threshold register, and, when the second counter value is equal to the interrupt threshold value, a corresponding "interrupt arm" bit is set to enable a fast interrupt indication. On a subsequent roll-over of the lower bits of that counter, the interrupt will be fired.

A new approach for two-terminal electronic memory devices - Storing information on silicon nanowires

NASA Astrophysics Data System (ADS)

Saranti, Konstantina; Alotaibi, Sultan; Paul, Shashi

2016-06-01

The work described in this paper focuses on the utilisation of silicon nanowires as the information storage element in flash-type memory devices. Silicon nanostructures have attracted attention due to interesting electrical and optical properties, and their potential integration into electronic devices. A detailed investigation of the suitability of silicon nanowires as the charge storage medium in two-terminal non-volatile memory devices are presented in this report. The deposition of the silicon nanostructures was carried out at low temperatures (less than 400 °C) using a previously developed a novel method within our research group. Two-terminal non-volatile (2TNV) memory devices and metal-insulator-semiconductor (MIS) structures containing the silicon nanowires were fabricated and an in-depth study of their characteristics was carried out using current-voltage and capacitance techniques.

Resistive switching behaviors of Au/pentacene/Si-nanowire arrays/heavily doped n-type Si devices for memory applications

NASA Astrophysics Data System (ADS)

Tsao, Hou-Yen; Lin, Yow-Jon

2014-02-01

The fabrication of memory devices based on the Au/pentacene/heavily doped n-type Si (n+-Si), Au/pentacene/Si nanowires (SiNWs)/n+-Si, and Au/pentacene/H2O2-treated SiNWs/n+-Si structures and their resistive switching characteristics were reported. A pentacene memory structure using SiNW arrays as charge storage nodes was demonstrated. The Au/pentacene/SiNWs/n+-Si devices show hysteresis behavior. H2O2 treatment may lead to the hysteresis degradation. However, no hysteresis-type current-voltage characteristics were observed for Au/pentacene/n+-Si devices, indicating that the resistive switching characteristic is sensitive to SiNWs and the charge trapping effect originates from SiNWs. The concept of nanowires within the organic layer opens a promising direction for organic memory devices.

Pulsed electrical discharge in gas bubbles in water

NASA Astrophysics Data System (ADS)

Gershman, Sophia

A phenomenological picture of pulsed electrical discharge in gas bubbles in water is produced by combining electrical, spectroscopic, and imaging methods. The discharge is generated by applying one microsecond long 5 to 20 kilovolt pulses between the needle and disk electrodes submerged in water. A gas bubble is generated at the tip of the needle electrode. The study includes detailed experimental investigation of the discharge in argon bubbles and a brief look at the discharge in oxygen bubbles. Imaging, electrical characteristics, and time-resolved optical emission data point to a fast streamer propagation mechanism and formation of a plasma channel in the bubble. Spectroscopic methods based on line intensity ratios and Boltzmann plots of line intensities of argon, atomic hydrogen, and argon ions and the examination of molecular emission bands from molecular nitrogen and hydroxyl radicals provide evidence of both fast beam-like electrons and slow thermalized ones with temperatures of 0.6 -- 0.8 electron-volts. The collisional nature of plasma at atmospheric pressure affects the decay rates of optical emission. Spectroscopic study of rotational-vibrational bands of hydroxyl radical and molecular nitrogen gives vibrational and rotational excitation temperatures of the discharge of about 0.9 and 0.1 electron-volt, respectively. Imaging and electrical evidence show that discharge charge is deposited on the bubble wall and water serves as a dielectric barrier for the field strength and time scales of this experiment. Comparing the electrical and imaging information for consecutive pulses applied at a frequency of 1 Hz indicates that each discharge proceeds as an entirely new process with no memory of the previous discharge aside from long-lived chemical species, such as ozone and oxygen. Intermediate values for the discharge gap and pulse duration, low repetition rate, and unidirectional character of the applied voltage pulses make the discharge process here unique compared to the traditional corona or dielectric barrier discharges. These conditions make the experimental evidence presented in this work valuable for the advancement of modeling and the theoretical understanding of the discharge in bubbles in water.

Thickness effect of nickel oxide thin films on associated solution-processed write-once-read-many-times memory devices

NASA Astrophysics Data System (ADS)

Wang, Xiao Lin; Liu, Zhen; Wen, Chao; Liu, Yang; Wang, Hong Zhe; Chen, T. P.; Zhang, Hai Yan

2018-06-01

With self-prepared nickel acetate based solution, NiO thin films with different thicknesses have been fabricated by spin coating followed by thermal annealing. By forming a two-terminal Ag/NiO/ITO structure on glass, write-once-read-many-times (WORM) memory devices are realized. The WORM memory behavior is based on a permanent switching from an initial high-resistance state (HRS) to an irreversible low-resistance state (LRS) under the application of a writing voltage, due to the formation of a solid bridge across Ag and ITO electrodes by conductive filaments (CFs). The memory performance is investigated as a function of the NiO film thickness, which is determined by the number of spin-coated NiO layers. For devices with 4 and 6 NiO layers, data retention up to 104 s and endurance of 103 reading operations in the measurement range have been obtained with memory window maintained above four orders for both HRS and LRS. Before and after writing, the devices show the hopping and ohmic conduction behaviors, respectively, confirming that the CF formation could be the mechanism responsible for writing in the WORM memory devices.

A wearable multiplexed silicon nonvolatile memory array using nanocrystal charge confinement

PubMed Central

Kim, Jaemin; Son, Donghee; Lee, Mincheol; Song, Changyeong; Song, Jun-Kyul; Koo, Ja Hoon; Lee, Dong Jun; Shim, Hyung Joon; Kim, Ji Hoon; Lee, Minbaek; Hyeon, Taeghwan; Kim, Dae-Hyeong

2016-01-01

Strategies for efficient charge confinement in nanocrystal floating gates to realize high-performance memory devices have been investigated intensively. However, few studies have reported nanoscale experimental validations of charge confinement in closely packed uniform nanocrystals and related device performance characterization. Furthermore, the system-level integration of the resulting devices with wearable silicon electronics has not yet been realized. We introduce a wearable, fully multiplexed silicon nonvolatile memory array with nanocrystal floating gates. The nanocrystal monolayer is assembled over a large area using the Langmuir-Blodgett method. Efficient particle-level charge confinement is verified with the modified atomic force microscopy technique. Uniform nanocrystal charge traps evidently improve the memory window margin and retention performance. Furthermore, the multiplexing of memory devices in conjunction with the amplification of sensor signals based on ultrathin silicon nanomembrane circuits in stretchable layouts enables wearable healthcare applications such as long-term data storage of monitored heart rates. PMID:26763827

Nonvolatile memory behavior of nanocrystalline cellulose/graphene oxide composite films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Valentini, L., E-mail: luca.valentini@unipg.it; Cardinali, M.; Fortunati, E.

2014-10-13

With the continuous advance of modern electronics, the demand for nonvolatile memory cells rapidly grows. In order to develop post-silicon electronic devices, it is necessary to find innovative solutions to the eco-sustainability problem of materials for nonvolatile memory cells. In this work, we realized a resistive memory device based on graphene oxide (GO) and GO/cellulose nanocrystals (CNC) thin films. Aqueous solutions of GO and GO with CNC have been prepared and drop cast between two metal electrodes. Such thin-film based devices showed a transition between low and high conductivity states upon the forward and backward sweeping of an external electricmore » field. This reversible current density transition behavior demonstrates a typical memory characteristic. The obtained results open an easy route for electronic information storage based on the integration of nanocrystalline cellulose onto graphene based devices.« less

A wearable multiplexed silicon nonvolatile memory array using nanocrystal charge confinement.

PubMed

Kim, Jaemin; Son, Donghee; Lee, Mincheol; Song, Changyeong; Song, Jun-Kyul; Koo, Ja Hoon; Lee, Dong Jun; Shim, Hyung Joon; Kim, Ji Hoon; Lee, Minbaek; Hyeon, Taeghwan; Kim, Dae-Hyeong

2016-01-01

Strategies for efficient charge confinement in nanocrystal floating gates to realize high-performance memory devices have been investigated intensively. However, few studies have reported nanoscale experimental validations of charge confinement in closely packed uniform nanocrystals and related device performance characterization. Furthermore, the system-level integration of the resulting devices with wearable silicon electronics has not yet been realized. We introduce a wearable, fully multiplexed silicon nonvolatile memory array with nanocrystal floating gates. The nanocrystal monolayer is assembled over a large area using the Langmuir-Blodgett method. Efficient particle-level charge confinement is verified with the modified atomic force microscopy technique. Uniform nanocrystal charge traps evidently improve the memory window margin and retention performance. Furthermore, the multiplexing of memory devices in conjunction with the amplification of sensor signals based on ultrathin silicon nanomembrane circuits in stretchable layouts enables wearable healthcare applications such as long-term data storage of monitored heart rates.

Radiation Test Challenges for Scaled Commerical Memories

NASA Technical Reports Server (NTRS)

LaBel, Kenneth A.; Ladbury, Ray L.; Cohn, Lewis M.; Oldham, Timothy

2007-01-01

As sub-100nm CMOS technologies gather interest, the radiation effects performance of these technologies provide a significant challenge. In this talk, we shall discuss the radiation testing challenges as related to commercial memory devices. The focus will be on complex test and failure modes emerging in state-of-the-art Flash non-volatile memories (NVMs) and synchronous dynamic random access memories (SDRAMs), which are volatile. Due to their very high bit density, these device types are highly desirable for use in the natural space environment. In this presentation, we shall discuss these devices with emphasis on considerations for test and qualification methods required.

Recent Advances of Flexible Data Storage Devices Based on Organic Nanoscaled Materials.

PubMed

Zhou, Li; Mao, Jingyu; Ren, Yi; Han, Su-Ting; Roy, Vellaisamy A L; Zhou, Ye

2018-03-01

Following the trend of miniaturization as per Moore's law, and facing the strong demand of next-generation electronic devices that should be highly portable, wearable, transplantable, and lightweight, growing endeavors have been made to develop novel flexible data storage devices possessing nonvolatile ability, high-density storage, high-switching speed, and reliable endurance properties. Nonvolatile organic data storage devices including memory devices on the basis of floating-gate, charge-trapping, and ferroelectric architectures, as well as organic resistive memory are believed to be favorable candidates for future data storage applications. In this Review, typical information on device structure, memory characteristics, device operation mechanisms, mechanical properties, challenges, and recent progress of the above categories of flexible data storage devices based on organic nanoscaled materials is summarized. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Plasma Discharges in Gas Bubbles in Liquid Water: Breakdown Mechanisms and Resultant Chemistry

NASA Astrophysics Data System (ADS)

Gucker, Sarah M. N.

The use of atmospheric pressure plasmas in gases and liquids for purification of liquids has been investigated by numerous researchers, and is highly attractive due to their strong potential as a disinfectant and sterilizer. However, the fundamental understanding of plasma production in liquid water is still limited. Despite the decades of study dedicated to electrical discharges in liquids, many physical aspects of liquids, such as the high inhomogeneity of liquids, complicate analyses. For example, the complex nonlinearities of the fluid have intricate effects on the electric field of the propagating streamer. Additionally, the liquid material itself can vaporize, leading to discontinuous liquid-vapor boundaries. Both can and do often lead to notable hydrodynamic effects. The chemistry of these high voltage discharges on liquid media can have circular effects, with the produced species having influence on future discharges. Two notable examples include an increase in liquid conductivity via charged species production, which affects the discharge. A second, more complicated scenario seen in some liquids (such as water) is the doubling or tripling of molecular density for a few molecule layers around a high voltage electrode. These complexities require technological advancements in optical diagnostics that have only recently come into being. This dissertation investigates several aspects of electrical discharges in gas bubbles in liquids. Two primary experimental configurations are investigated: the first allows for single bubble analysis through the use of an acoustic trap. Electrodes may be brought in around the bubble to allow for plasma formation without physically touching the bubble. The second experiment investigates the resulting liquid phase chemistry that is driven by the discharge. This is done through a dielectric barrier discharge with a central high voltage surrounded by a quartz discharge tube with a coil ground electrode on the outside. The plasma is created either through flowing gas around the high voltage electrode in the discharge tube or self-generated by the plasma as in the steam discharge. This second method allows for large scale processing of contaminated water and for bulk chemical and optical analysis. Breakdown mechanisms of attached and unattached gas bubbles in liquid water were investigated using the first device. The breakdown scaling relation between breakdown voltage, pressure and dimensions of the discharge was studied. A Paschen-like voltage dependence for air bubbles in liquid water was discovered. The results of high-speed photography suggest the physical charging of the bubble due to a high voltage pulse; this charging can be significant enough to produce rapid kinetic motion of the bubble about the electrode region as the applied electric field changes over a voltage pulse. Physical deformation of the bubble is observed. This charging can also prevent breakdown from occurring, necessitating higher applied voltages to overcome the phenomenon. This dissertation also examines the resulting chemistry from plasma interacting with the bubble-liquid system. Through the use of optical emission spectroscopy, plasma parameters such as electron density, gas temperature, and molecular species production and intensity are found to have a time-dependence over the ac voltage cycle. This dependence is also source gas type dependent. These dependencies afford effective control over plasma-driven decomposition. The effect of plasma-produced radicals on various wastewater simulants is studied. Various organic dyes, halogenated compounds, and algae water are decomposed and assessed. Toxicology studies with melanoma cells exposed to plasma-treated dye solutions are completed, demonstrating the non-cytotoxic quality of the decomposition process. Thirdly, this dissertation examines the steam plasma system, developed through this research to circumvent the acidification associated with gas-feed discharges. This steam plasma creates its own gas pocket via field emission. This steam plasma is shown to have strong decontamination properties, with residual effects lasting beyond two weeks that continue to decompose contaminants. Finally, a "two-dimensional bubble" was developed and demonstrated as a novel diagnostic device to study the gas-water interface, the reaction zone. This device is shown to provide convenient access to the reaction zone and decomposition of various wastewater simulants is investigated.

From Brand Image Research to Teaching Assessment: Using a Projective Technique Borrowed from Marketing Research to Aid an Understanding of Teaching Effectiveness

ERIC Educational Resources Information Center

Boddy, Clive Roland

2004-01-01

This paper describes how a simple qualitative market research technique using a projective device called a bubble drawing can be used as a useful feedback device to gain an understanding of students' views of the teaching effectiveness of a market research lecture. Comparisons are made with feedback gained from teaching observations and insights…

The effect of microbubbles on gas-liquid mass transfer coefficient and degradation rate of COD in wastewater treatment.

PubMed

Yao, Kangning; Chi, Yong; Wang, Fei; Yan, Jianhua; Ni, Mingjiang; Cen, Kefa

2016-01-01

A commonly used aeration device at present has the disadvantages of low mass transfer rate because the generated bubbles are several millimeters in diameter which are much bigger than microbubbles. Therefore, the effect of a microbubble on gas-liquid mass transfer and wastewater treatment process was investigated. To evaluate the effect of each bubble type, the volumetric mass transfer coefficients for microbubbles and conventional bubbles were determined. The volumetric mass transfer coefficient was 0.02905 s(-1) and 0.02191 s(-1) at a gas flow rate of 0.67 L min(-1) in tap water for microbubbles and conventional bubbles, respectively. The degradation rate of simulated municipal wastewater was also investigated, using aerobic activated sludge and ozone. Compared with the conventional bubble generator, the chemical oxygen demand (COD) removal rate was 2.04, 5.9, 3.26 times higher than those of the conventional bubble contactor at the same initial COD concentration of COD 200 mg L(-1), 400 mg L(-1), and 600 mg L(-1), while aerobic activated sludge was used. For the ozonation process, the rate of COD removal using microbubble generator was 2.38, 2.51, 2.89 times of those of the conventional bubble generator. Based on the results, the effect of initial COD concentration on the specific COD degradation rate were discussed in different systems. Thus, the results revealed that microbubbles could enhance mass transfer in wastewater treatment and be an effective method to improve the degradation of wastewater.

Electromagnetically actuated micromanipulator using an acoustically oscillating bubble

NASA Astrophysics Data System (ADS)

Kwon, J. O.; Yang, J. S.; Lee, S. J.; Rhee, K.; Chung, S. K.

2011-11-01

A novel non-invasive micromanipulation technique has been developed where a microrobot swimming in an aqueous medium manipulates micro-objects, through electromagnetic actuation using an acoustically oscillating bubble attached to the microrobot as a grasping tool. This micromanipulation concept was experimentally verified; an investigation of electromagnetic actuation and acoustic excitation was also performed. Two-dimensional propulsion of a magnetic piece was demonstrated through electromagnetic actuation, using three pairs of electric coils surrounding the water chamber, and confirming that the propulsion speed of the magnetic piece was linearly proportional to the applied current intensity. Micro-object manipulation was separately demonstrated using an air bubble with glass beads (80 µm diameter) and a steel ball (800 µm diameter) in an aqueous medium. Upon acoustic excitation of the bubble by a piezo-actuator around its resonant frequency, the generated radiation force attracted and captured the neighboring glass beads and steel ball. The grasping force was indirectly measured by exposing the glass beads captured by the oscillating bubble to a stream generated by an auto-syringe pump in a mini-channel. By measuring the maximum speed of the streaming flow when the glass beads detached from the oscillating bubble and flowed downstream, the grasping force was calculated as 50 nN, based on Stokes' drag approximation. Finally, a fish egg was successfully manipulated with the integration of electromagnetic actuation and acoustic excitation, using a mini-robot consisting of a millimeter-sized magnetic piece with a bubble attached to its bottom. This novel micromanipulation may be an efficient tool for both micro device assembly and single-cell manipulation.

Hierarchically Self-Assembled Block Copolymer Blends for Templating Hollow Phase-Change Nanostructures with an Extremely Low Switching Current

DOE PAGES

Park, Woon Ik; Kim, Jong Min; Jeong, Jae Won; ...

2015-03-17

Phase change memory (PCM) is one of the most promising candidates for next-generation nonvolatile memory devices because of its high speed, excellent reliability, and outstanding scalability. But, the high switching current of PCM devices has been a critical hurdle to realize low-power operation. Although one solution is to reduce the switching volume of the memory, the resolution limit of photolithography hinders further miniaturization of device dimensions. Here, we employed unconventional self-assembly geometries obtained from blends of block copolymers (BCPs) to form ring-shaped hollow PCM nanostructures with an ultrasmall contact area between a phase-change material (Ge 2Sb 2Te 5) and amore » heater (TiN) electrode. The high-density (approximately 0.1 terabits per square inch) PCM nanoring arrays showed extremely small switching current of 2-3 mu A. Furthermore, the relatively small reset current of the ring-shaped PCM compared to the pillar-shaped devices is attributed to smaller switching volume, which is well supported by electro-thermal simulation results. Our approach may also be extended to other nonvolatile memory device applications such as resistive switching memory and magnetic storage devices, where the control of nanoscale geometry can significantly affect device performances.« less

Particle migration and sorting in microbubble streaming flows

PubMed Central

Thameem, Raqeeb; Hilgenfeldt, Sascha

2016-01-01

Ultrasonic driving of semicylindrical microbubbles generates strong streaming flows that are robust over a wide range of driving frequencies. We show that in microchannels, these streaming flow patterns can be combined with Poiseuille flows to achieve two distinctive, highly tunable methods for size-sensitive sorting and trapping of particles much smaller than the bubble itself. This method allows higher throughput than typical passive sorting techniques, since it does not require the inclusion of device features on the order of the particle size. We propose a simple mechanism, based on channel and flow geometry, which reliably describes and predicts the sorting behavior observed in experiment. It is also shown that an asymptotic theory that incorporates the device geometry and superimposed channel flow accurately models key flow features such as peak speeds and particle trajectories, provided it is appropriately modified to account for 3D effects caused by the axial confinement of the bubble. PMID:26958103

Characteristics of Reduced Graphene Oxide Quantum Dots for a Flexible Memory Thin Film Transistor.

PubMed

Kim, Yo-Han; Lee, Eun Yeol; Lee, Hyun Ho; Seo, Tae Seok

2017-05-17

Reduced graphene oxide quantum dot (rGOQD) devices in formats of capacitor and thin film transistor (TFT) were demonstrated and examined as the first trial to achieve nonambipolar channel property. In addition, through a gold nanoparticle (Au NP) layer embedded between the rGOQD active channel and dielectric layer, memory capacitor and TFT performances were realized by capacitance-voltage (C-V) hysteresis and gate program, erase, and reprogram biases. First, capacitor structure of the rGOQD memory device was constructed to examine memory charging effect featured in hysteretic C-V behavior with a 30 nm dielectric layer of cross-linked poly(vinyl alcohol). For the intervening Au NP charging layer, self-assembled monolayer (SAM) formation of the Au NP was executed to utilize electrostatic interaction by a dip-coating process under ambient environments with a conformal fabrication uniformity. Second, the rGOQD memory TFT device was also constructed in the same format of the Au NPs SAMs on a flexible substrate. Characteristics of the rGOQD TFT output showed novel saturation curves unlike typical graphene-based TFTs. However, The rGOQD TFT device reveals relatively low on/off ratio of 10 1 and mobility of 5.005 cm 2 /V·s. For the memory capacitor, the flat-band voltage shift (ΔV FB ) was measured as 3.74 V for ±10 V sweep, and for the memory TFT, the threshold voltage shift (ΔV th ) by the Au NP charging was detected as 7.84 V. In summary, it was concluded that the rGOQD memory device could accomplish an ideal graphene-based memory performance, which could have provided a wide memory window and saturated output characteristics.

Low-power resistive random access memory by confining the formation of conducting filaments

DOE Office of Scientific and Technical Information (OSTI.GOV)

Huang, Yi-Jen; Lee, Si-Chen, E-mail: sclee@ntu.edu.tw; Shen, Tzu-Hsien

2016-06-15

Owing to their small physical size and low power consumption, resistive random access memory (RRAM) devices are potential for future memory and logic applications in microelectronics. In this study, a new resistive switching material structure, TiO{sub x}/silver nanoparticles/TiO{sub x}/AlTiO{sub x}, fabricated between the fluorine-doped tin oxide bottom electrode and the indium tin oxide top electrode is demonstrated. The device exhibits excellent memory performances, such as low operation voltage (<±1 V), low operation power, small variation in resistance, reliable data retention, and a large memory window. The current-voltage measurement shows that the conducting mechanism in the device at the high resistancemore » state is via electron hopping between oxygen vacancies in the resistive switching material. When the device is switched to the low resistance state, conducting filaments are formed in the resistive switching material as a result of accumulation of oxygen vacancies. The bottom AlTiO{sub x} layer in the device structure limits the formation of conducting filaments; therefore, the current and power consumption of device operation are significantly reduced.« less

Fabrication of poly(methyl methacrylate)-MoS{sub 2}/graphene heterostructure for memory device application

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shinde, Sachin M.; Tanemura, Masaki; Kalita, Golap, E-mail: kalita.golap@nitech.ac.jp

2014-12-07

Combination of two dimensional graphene and semi-conducting molybdenum disulfide (MoS{sub 2}) is of great interest for various electronic device applications. Here, we demonstrate fabrication of a hybridized structure with the chemical vapor deposited graphene and MoS{sub 2} crystals to configure a memory device. Elongated hexagonal and rhombus shaped MoS{sub 2} crystals are synthesized by sulfurization of thermally evaporated molybdenum oxide (MoO{sub 3}) thin film. Scanning transmission electron microscope studies reveal atomic level structure of the synthesized high quality MoS{sub 2} crystals. In the prospect of a memory device fabrication, poly(methyl methacrylate) (PMMA) is used as an insulating dielectric material asmore » well as a supporting layer to transfer the MoS{sub 2} crystals. In the fabricated device, PMMA-MoS{sub 2} and graphene layers act as the functional and electrode materials, respectively. Distinctive bistable electrical switching and nonvolatile rewritable memory effect is observed in the fabricated PMMA-MoS{sub 2}/graphene heterostructure. The developed material system and demonstrated memory device fabrication can be significant for next generation data storage applications.« less

Device and methods for writing and erasing analog information in small memory units via voltage pulses

DOEpatents

El Gabaly Marquez, Farid; Talin, Albert Alec

2018-04-17

Devices and methods for non-volatile analog data storage are described herein. In an exemplary embodiment, an analog memory device comprises a potential-carrier source layer, a barrier layer deposited on the source layer, and at least two storage layers deposited on the barrier layer. The memory device can be prepared to write and read data via application of a biasing voltage between the source layer and the storage layers, wherein the biasing voltage causes potential-carriers to migrate into the storage layers. After initialization, data can be written to the memory device by application of a voltage pulse between two storage layers that causes potential-carriers to migrate from one storage layer to another. A difference in concentration of potential carriers caused by migration of potential-carriers between the storage layers results in a voltage that can be measured in order to read the written data.

Short-term memory to long-term memory transition in a nanoscale memristor.

PubMed

Chang, Ting; Jo, Sung-Hyun; Lu, Wei

2011-09-27

"Memory" is an essential building block in learning and decision-making in biological systems. Unlike modern semiconductor memory devices, needless to say, human memory is by no means eternal. Yet, forgetfulness is not always a disadvantage since it releases memory storage for more important or more frequently accessed pieces of information and is thought to be necessary for individuals to adapt to new environments. Eventually, only memories that are of significance are transformed from short-term memory into long-term memory through repeated stimulation. In this study, we show experimentally that the retention loss in a nanoscale memristor device bears striking resemblance to memory loss in biological systems. By stimulating the memristor with repeated voltage pulses, we observe an effect analogous to memory transition in biological systems with much improved retention time accompanied by additional structural changes in the memristor. We verify that not only the shape or the total number of stimuli is influential, but also the time interval between stimulation pulses (i.e., the stimulation rate) plays a crucial role in determining the effectiveness of the transition. The memory enhancement and transition of the memristor device was explained from the microscopic picture of impurity redistribution and can be qualitatively described by the same equations governing biological memories. © 2011 American Chemical Society

Bubble Shuttle: A newly discovered transport mechanism, which transfers microorganisms from the sediment into the water column

NASA Astrophysics Data System (ADS)

Schmale, O.; Stolle, C.; Leifer, I.; Schneider von Deimling, J.; Kiesslich, K.; Krause, S.; Frahm, A.; Treude, T.

2013-12-01

The diversity and abundance of methanotrophic microorganisms is well studied in the aquatic environment, indicating their importance in biogeochemical cycling of methane in the sediment and the water column. However, whether methanotrophs are distinct populations in these habitats or are exchanged between benthic and pelagic environments, remains an open question. Therefore, field studies were conducted at the 'Rostocker Seep' site (Coal Oil Point seep area, California, USA) to test our hypothesis that methane-oxidizing microorganisms can be transported by gas bubbles from the sediment into the water column. The natural methane emanating location 'Rostocker Seep' showed a strong surface water oversaturation in methane with respect to the atmospheric equilibrium. Catalyzed Reporter Deposition Fluorescence In Situ Hybridization (CARD-FISH) analyzes were performed to determine the abundance of aerobic and anaerobic methanotrophic microorganisms. Aerobic methane oxidizing bacteria were detected in the sediment and the water column, whereas anaerobic methanotrophs were detected exclusively in the sediment. The key device of the project was the newly developed "Bubble Catcher" used to collect naturally emanating gas bubbles at the sea floor together with particles attached to the bubble surface rim. Bubble Catcher experiments were carried out directly above a natural bubble release spot and on a reference site at which artificially released gas bubbles were caught, which had no contact with the sediment. CARD-FISH analyzes showed that aerobic methane oxidizing bacteria were transported by gas bubbles from the sediment into the water column. In contrast anaerobic methanotrophs were not detected in the bubble catcher. Further results indicate that this newly discovered Bubble Shuttle transport mechanism might influence the distribution pattern of methanotrophic microorganisms in the water column and even at the air-sea interface. Methane seep areas are often characterized by an elevated abundance of methane-oxidizing microorganisms, which consume a considerable amount of methane before it escapes into the atmosphere. Based on our study we hypothesize that the Bubble Shuttle transport mechanism contributes to this pelagic methane sink by a sediment-water column transfer of methane oxidizing microorganisms. Furthermore, this Bubble Shuttle may influence the methanotrophic community in the water column after massive short-term submarine inputs of methane (e.g. release of methane from bore holes). Especially in deep-sea regions, where the abundance of methane oxidizing microorganisms in the water column is low in general, Bubble Shuttle may inject a relevant amount of methane oxidizing microorganisms into the water column during massive inputs, supporting indirectly the turnover of this greenhouse active trace gas in the submarine environment.

Radiation Testing, Characterization and Qualification Challenges for Modern Microelectronics and Photonics Devices and Technologies

NASA Technical Reports Server (NTRS)

LaBel, Kenneth A.; Cohn, Lewis M.

2008-01-01

At GOMAC 2007, we discussed a selection of the challenges for radiation testing of modern semiconductor devices focusing on state-of-the-art memory technologies. This included FLASH non-volatile memories (NVMs) and synchronous dynamic random access memories (SDRAMs). In this presentation, we extend this discussion in device packaging and complexity as well as single event upset (SEU) mechanisms using several technology areas as examples including: system-on-a-chip (SOC) devices and photonic or fiber optic systems. The underlying goal is intended to provoke thought for understanding the limitations and interpretation of radiation testing results.

From dead leaves to sustainable organic resistive switching memory.

PubMed

Sun, Bai; Zhu, Shouhui; Mao, Shuangsuo; Zheng, Pingping; Xia, Yudong; Yang, Feng; Lei, Ming; Zhao, Yong

2018-03-01

An environmental-friendly, sustainable, pollution-free, biodegradable, flexible and wearable electronic device hold advanced potential applications. Here, an organic resistive switching memory device with Ag/Leaves/Ti/PET structure on a flexible polyethylene terephthalate (PET) substrate was fabricated for the first time. We observed an obvious resistive switching memory characteristic with large switching resistance ratio and stable cycle performance at room temperature. This work demonstrates that leaves, a useless waste, can be properly treated to make useful devices. Furthermore, the as-fabricated devices can be degraded naturally without damage to the environment. Copyright © 2017 Elsevier Inc. All rights reserved.

Multistate storage nonvolatile memory device based on ferroelectricity and resistive switching effects of SrBi2Ta2O9 films

NASA Astrophysics Data System (ADS)

Song, Zhiwei; Li, Gang; Xiong, Ying; Cheng, Chuanpin; Zhang, Wanli; Tang, Minghua; Li, Zheng; He, Jiangheng

2018-05-01

A memory device with a Pt/SrBi2Ta2O9(SBT)/Pt(111) structure was shown to have excellent combined ferroelectricity and resistive switching properties, leading to higher multistate storage memory capacity in contrast to ferroelectric memory devices. In this device, SBT polycrystalline thin films with significant (115) orientation were fabricated on Pt(111)/Ti/SiO2/Si(100) substrates using CVD (chemical vapor deposition) method. Measurement results of the electric properties exhibit reproducible and reliable ferroelectricity switching behavior and bipolar resistive switching effects (BRS) without an electroforming process. The ON/OFF ratio of the resistive switching was found to be about 103. Switching mechanisms for the low resistance state (LRS) and high resistance state (HRS) currents are likely attributed to the Ohmic and space charge-limited current (SCLC) behavior, respectively. Moreover, the ferroelectricity and resistive switching effects were found to be mutually independent, and the four logic states were obtained by controlling the periodic sweeping voltage. This work holds great promise for nonvolatile multistate memory devices with high capacity and low cost.

Composition-dependent nanoelectronics of amido-phenazines: non-volatile RRAM and WORM memory devices.

PubMed

Maiti, Dilip K; Debnath, Sudipto; Nawaz, Sk Masum; Dey, Bapi; Dinda, Enakhi; Roy, Dipanwita; Ray, Sudipta; Mallik, Abhijit; Hussain, Syed A

2017-10-17

A metal-free three component cyclization reaction with amidation is devised for direct synthesis of DFT-designed amido-phenazine derivative bearing noncovalent gluing interactions to fabricate organic nanomaterials. Composition-dependent organic nanoelectronics for nonvolatile memory devices are discovered using mixed phenazine-stearic acid (SA) nanomaterials. We discovered simultaneous two different types of nonmagnetic and non-moisture sensitive switching resistance properties of fabricated devices utilizing mixed organic nanomaterials: (a) sample-1(8:SA = 1:3) is initially off, turning on at a threshold, but it does not turn off again with the application of any voltage, and (b) sample-2 (8:SA = 3:1) is initially off, turning on at a sharp threshold and off again by reversing the polarity. No negative differential resistance is observed in either type. These samples have different device implementations: sample-1 is attractive for write-once-read-many-times memory devices, such as novel non-editable database, archival memory, electronic voting, radio frequency identification, sample-2 is useful for resistive-switching random access memory application.

Functionalized Graphitic Carbon Nitride for Metal-free, Flexible and Rewritable Nonvolatile Memory Device via Direct Laser-Writing

PubMed Central

Zhao, Fei; Cheng, Huhu; Hu, Yue; Song, Long; Zhang, Zhipan; Jiang, Lan; Qu, Liangti

2014-01-01

Graphitic carbon nitride nanosheet (g-C3N4-NS) has layered structure similar with graphene nanosheet and presents unusual physicochemical properties due to the s-triazine fragments. But their electronic and electrochemical applications are limited by the relatively poor conductivity. The current work provides the first example that atomically thick g-C3N4-NSs are the ideal candidate as the active insulator layer with tunable conductivity for achieving the high performance memory devices with electrical bistability. Unlike in conventional memory diodes, the g-C3N4-NSs based devices combined with graphene layer electrodes are flexible, metal-free and low cost. The functionalized g-C3N4-NSs exhibit desirable dispersibility and dielectricity which support the all-solution fabrication and high performance of the memory diodes. Moreover, the flexible memory diodes are conveniently fabricated through the fast laser writing process on graphene oxide/g-C3N4-NSs/graphene oxide thin film. The obtained devices not only have the nonvolatile electrical bistability with great retention and endurance, but also show the rewritable memory effect with a reliable ON/OFF ratio of up to 105, which is the highest among all the metal-free flexible memory diodes reported so far, and even higher than those of metal-containing devices. PMID:25073687

Warm Pressurant Gas Effects on the Static Bubble Point Pressure for Cryogenic LADs

NASA Technical Reports Server (NTRS)

Hartwig, Jason W.; McQuillen, John; Chato, Daniel J.

2014-01-01

This paper presents experimental results for the liquid hydrogen and nitrogen bubble point tests using warm pressurant gases conducted at the NASA Glenn Research Center. The purpose of the test series was to determine the effect of elevating the temperature of the pressurant gas on the performance of a liquid acquisition device (LAD). Three fine mesh screen samples (325x2300, 450x2750, 510x3600) were tested in liquid hydrogen and liquid nitrogen using cold and warm non-condensable (gaseous helium) and condensable (gaseous hydrogen or nitrogen) pressurization schemes. Gases were conditioned from 0K - 90K above the liquid temperature. Results clearly indicate degradation in bubble point pressure using warm gas, with a greater reduction in performance using condensable over non-condensable pressurization. Degradation in the bubble point pressure is inversely proportional to screen porosity, as the coarsest mesh demonstrated the highest degradation. Results here have implication on both pressurization and LAD system design for all future cryogenic propulsion systems. A detailed review of historical heated gas tests is also presented for comparison to current results.

Warm Pressurant Gas Effects on the Liquid Hydrogen Bubble Point

NASA Technical Reports Server (NTRS)

Hartwig, Jason W.; McQuillen, John B.; Chato, David J.

2013-01-01

This paper presents experimental results for the liquid hydrogen bubble point tests using warm pressurant gases conducted at the Cryogenic Components Cell 7 facility at the NASA Glenn Research Center in Cleveland, Ohio. The purpose of the test series was to determine the effect of elevating the temperature of the pressurant gas on the performance of a liquid acquisition device. Three fine mesh screen samples (325 x 2300, 450 x 2750, 510 x 3600) were tested in liquid hydrogen using cold and warm noncondensible (gaseous helium) and condensable (gaseous hydrogen) pressurization schemes. Gases were conditioned from 0 to 90 K above the liquid temperature. Results clearly indicate a degradation in bubble point pressure using warm gas, with a greater reduction in performance using condensable over noncondensible pressurization. Degradation in the bubble point pressure is inversely proportional to screen porosity, as the coarsest mesh demonstrated the highest degradation. Results here have implication on both pressurization and LAD system design for all future cryogenic propulsion systems. A detailed review of historical heated gas tests is also presented for comparison to current results.

Kidney stone erosion by micro scale hydrodynamic cavitation and consequent kidney stone treatment.

PubMed

Perk, Osman Yavuz; Şeşen, Muhsincan; Gozuacik, Devrim; Koşar, Ali

2012-09-01

The objective of this study is to reveal the potential of micro scale hydrodynamic bubbly cavitation for the use of kidney stone treatment. Hydrodynamically generated cavitating bubbles were targeted to the surfaces of 18 kidney stone samples made of calcium oxalate, and their destructive effects were exploited in order to remove kidney stones in in vitro experiments. Phosphate buffered saline (PBS) solution was used as the working fluid under bubbly cavitating conditions in a 0.75 cm long micro probe of 147 μm inner diameter at 9790 kPa pressure. The surface of calcium oxalate type kidney stones were exposed to bubbly cavitation at room temperature for 5 to 30 min. The eroded kidney stones were visually analyzed with a high speed CCD camera and using SEM (scanning electron microscopy) techniques. The experiments showed that at a cavitation number of 0.017, hydrodynamic bubbly cavitation device could successfully erode stones with an erosion rate of 0.31 mg/min. It was also observed that the targeted application of the erosion with micro scale hydrodynamic cavitation may even cause the fracture of the kidney stones within a short time of 30 min. The proposed treatment method has proven to be an efficient instrument for destroying kidney stones.

Impact of electrically formed interfacial layer and improved memory characteristics of IrOx/high-κx/W structures containing AlOx, GdOx, HfOx, and TaOx switching materials.

PubMed

Prakash, Amit; Maikap, Siddheswar; Banerjee, Writam; Jana, Debanjan; Lai, Chao-Sung

2013-09-06

Improved switching characteristics were obtained from high-κ oxides AlOx, GdOx, HfOx, and TaOx in IrOx/high-κx/W structures because of a layer that formed at the IrOx/high-κx interface under external positive bias. The surface roughness and morphology of the bottom electrode in these devices were observed by atomic force microscopy. Device size was investigated using high-resolution transmission electron microscopy. More than 100 repeatable consecutive switching cycles were observed for positive-formatted memory devices compared with that of the negative-formatted devices (only five unstable cycles) because it contained an electrically formed interfacial layer that controlled 'SET/RESET' current overshoot. This phenomenon was independent of the switching material in the device. The electrically formed oxygen-rich interfacial layer at the IrOx/high-κx interface improved switching in both via-hole and cross-point structures. The switching mechanism was attributed to filamentary conduction and oxygen ion migration. Using the positive-formatted design approach, cross-point memory in an IrOx/AlOx/W structure was fabricated. This cross-point memory exhibited forming-free, uniform switching for >1,000 consecutive dc cycles with a small voltage/current operation of ±2 V/200 μA and high yield of >95% switchable with a large resistance ratio of >100. These properties make this cross-point memory particularly promising for high-density applications. Furthermore, this memory device also showed multilevel capability with a switching current as low as 10 μA and a RESET current of 137 μA, good pulse read endurance of each level (>105 cycles), and data retention of >104 s at a low current compliance of 50 μA at 85°C. Our improvement of the switching characteristics of this resistive memory device will aid in the design of memory stacks for practical applications.

Evidence of Filamentary Switching in Oxide-based Memory Devices via Weak Programming and Retention Failure Analysis

NASA Astrophysics Data System (ADS)

Younis, Adnan; Chu, Dewei; Li, Sean

2015-09-01

Further progress in high-performance microelectronic devices relies on the development of novel materials and device architectures. However, the components and designs that are currently in use have reached their physical limits. Intensive research efforts, ranging from device fabrication to performance evaluation, are required to surmount these limitations. In this paper, we demonstrate that the superior bipolar resistive switching characteristics of a CeO2:Gd-based memory device can be manipulated by means of UV radiation, serving as a new degree of freedom. Furthermore, the metal oxide-based (CeO2:Gd) memory device was found to possess electrical and neuromorphic multifunctionalities. To investigate the underlying switching mechanism of the device, its plasticity behaviour was studied by imposing weak programming conditions. In addition, a short-term to long-term memory transition analogous to the forgetting process in the human brain, which is regarded as a key biological synaptic function for information processing and data storage, was realized. Based on a careful examination of the device’s retention behaviour at elevated temperatures, the filamentary nature of switching in such devices can be understood from a new perspective.

Evidence of Filamentary Switching in Oxide-based Memory Devices via Weak Programming and Retention Failure Analysis

PubMed Central

Younis, Adnan; Chu, Dewei; Li, Sean

2015-01-01

Further progress in high-performance microelectronic devices relies on the development of novel materials and device architectures. However, the components and designs that are currently in use have reached their physical limits. Intensive research efforts, ranging from device fabrication to performance evaluation, are required to surmount these limitations. In this paper, we demonstrate that the superior bipolar resistive switching characteristics of a CeO2:Gd-based memory device can be manipulated by means of UV radiation, serving as a new degree of freedom. Furthermore, the metal oxide-based (CeO2:Gd) memory device was found to possess electrical and neuromorphic multifunctionalities. To investigate the underlying switching mechanism of the device, its plasticity behaviour was studied by imposing weak programming conditions. In addition, a short-term to long-term memory transition analogous to the forgetting process in the human brain, which is regarded as a key biological synaptic function for information processing and data storage, was realized. Based on a careful examination of the device’s retention behaviour at elevated temperatures, the filamentary nature of switching in such devices can be understood from a new perspective. PMID:26324073

Operation mode switchable charge-trap memory based on few-layer MoS2

NASA Astrophysics Data System (ADS)

Hou, Xiang; Yan, Xiao; Liu, Chunsen; Ding, Shijin; Zhang, David Wei; Zhou, Peng

2018-03-01

Ultrathin layered two-dimensional (2D) semiconductors like MoS2 and WSe2 have received a lot of attention because of their excellent electrical properties and potential applications in electronic devices. We demonstrate a charge-trap memory with two different tunable operation modes based on a few-layer MoS2 channel and an Al2O3/HfO2/Al2O3 charge storage stack. Our device shows excellent memory properties under the traditional three-terminal operation mode. More importantly, unlike conventional charge-trap devices, this device can also realize the memory performance with just two terminals (drain and source) because of the unique atomic crystal electrical characteristics. Under the two-terminal operation mode, the erase/program current ratio can reach up to 104 with a stable retention property. Our study indicates that the conventional charge-trap memory cell can also realize the memory performance without the gate terminal based on novel two dimensional materials, which is meaningful for low power consumption and high integration density applications.

Hydraulic flow visualization method and apparatus

DOEpatents

Karidis, Peter G.

1984-01-01

An apparatus and method for visualizing liquid flow. Pulses of gas bubbles are introduced into a liquid flow stream and a strobe light is operated at a frequency related to the frequency of the gas pulses to shine on the bubbles as they pass through the liquid stream. The gas pulses pass through a probe body having a valve element, and a reciprocating valve stem passes through the probe body to operate the valve element. A stem actuating device comprises a slidable reciprocating member, operated by a crank arm. The actuated member is adjustable to adjust the amount of the valve opening during each pulse.

DESIGN OF A PATTERN RECOGNITION DIGITAL COMPUTER WITH APPLICATION TO THE AUTOMATIC SCANNING OF BUBBLE CHAMBER NEGATIVES

DOE Office of Scientific and Technical Information (OSTI.GOV)

McCormick, B.H.; Narasimhan, R.

1963-01-01

The overall computer system contains three main parts: an input device, a pattern recognition unit (PRU), and a control computer. The bubble chamber picture is divided into a grid of st run. Concent 1-mm squares on the film. It is then processed in parallel in a two-dimensional array of 1024 identical processing modules (stalactites) of the PRU. The array can function as a two- dimensional shift register in which results of successive shifting operations can be accumulated. The pattern recognition process is generally controlled by a conventional arithmetic computer. (A.G.W.)

Scientific developments of liquid crystal-based optical memory: a review

NASA Astrophysics Data System (ADS)

Prakash, Jai; Chandran, Achu; Biradar, Ashok M.

2017-01-01

The memory behavior in liquid crystals (LCs), although rarely observed, has made very significant headway over the past three decades since their discovery in nematic type LCs. It has gone from a mere scientific curiosity to application in variety of commodities. The memory element formed by numerous LCs have been protected by patents, and some commercialized, and used as compensation to non-volatile memory devices, and as memory in personal computers and digital cameras. They also have the low cost, large area, high speed, and high density memory needed for advanced computers and digital electronics. Short and long duration memory behavior for industrial applications have been obtained from several LC materials, and an LC memory with interesting features and applications has been demonstrated using numerous LCs. However, considerable challenges still exist in searching for highly efficient, stable, and long-lifespan materials and methods so that the development of useful memory devices is possible. This review focuses on the scientific and technological approach of fascinating applications of LC-based memory. We address the introduction, development status, novel design and engineering principles, and parameters of LC memory. We also address how the amalgamation of LCs could bring significant change/improvement in memory effects in the emerging field of nanotechnology, and the application of LC memory as the active component for futuristic and interesting memory devices.

Scientific developments of liquid crystal-based optical memory: a review.

PubMed

Prakash, Jai; Chandran, Achu; Biradar, Ashok M

2017-01-01

The memory behavior in liquid crystals (LCs), although rarely observed, has made very significant headway over the past three decades since their discovery in nematic type LCs. It has gone from a mere scientific curiosity to application in variety of commodities. The memory element formed by numerous LCs have been protected by patents, and some commercialized, and used as compensation to non-volatile memory devices, and as memory in personal computers and digital cameras. They also have the low cost, large area, high speed, and high density memory needed for advanced computers and digital electronics. Short and long duration memory behavior for industrial applications have been obtained from several LC materials, and an LC memory with interesting features and applications has been demonstrated using numerous LCs. However, considerable challenges still exist in searching for highly efficient, stable, and long-lifespan materials and methods so that the development of useful memory devices is possible. This review focuses on the scientific and technological approach of fascinating applications of LC-based memory. We address the introduction, development status, novel design and engineering principles, and parameters of LC memory. We also address how the amalgamation of LCs could bring significant change/improvement in memory effects in the emerging field of nanotechnology, and the application of LC memory as the active component for futuristic and interesting memory devices.

Virtex-5QV Self Scrubber

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wojahn, Christopher K.

2015-10-20

This HDL code (hereafter referred to as "software") implements circuitry in Xilinx Virtex-5QV Field Programmable Gate Array (FPGA) hardware. This software allows the device to self-check the consistency of its own configuration memory for radiation-induced errors. The software then provides the capability to correct any single-bit errors detected in the memory using the device's inherent circuitry, or reload corrupted memory frames when larger errors occur that cannot be corrected with the device's built-in error correction and detection scheme.

Application of graphene oxide-poly (vinyl alcohol) polymer nanocomposite for memory devices

NASA Astrophysics Data System (ADS)

Kaushal, Jyoti; Kaur, Ravneet; Sharma, Jadab; Tripathi, S. K.

2018-05-01

Significant attention has been gained by polymer nanocomposites because of their possible demands in future electronic memory devices. In the present work, device based on Graphene Oxide (GO) and polyvinyl alcohol (PVA) has been made and examined for the memory device application. The prepared Graphene oxide (GO) and GO-PVA nanocomposite (NC) has been characterized by X-ray Diffraction (XRD). GO nanosheets show the diffraction peak at 2θ = 11.60° and the interlayer spacing of 0.761 nm. The XRD of GO-PVA NC shows the diffraction peak at 2θ =18.56°. The fabricated device shows bipolar switching behavior having ON/OFF current ratio ˜102. The Write-Read-Erase-Read (WRER) cycles test shows that the Al/GO-PVA/Ag device has good stability and repeatability.

Automatic disease diagnosis using optimised weightless neural networks for low-power wearable devices

PubMed Central

Edla, Damodar Reddy; Kuppili, Venkatanareshbabu; Dharavath, Ramesh; Beechu, Nareshkumar Reddy

2017-01-01

Low-power wearable devices for disease diagnosis are used at anytime and anywhere. These are non-invasive and pain-free for the better quality of life. However, these devices are resource constrained in terms of memory and processing capability. Memory constraint allows these devices to store a limited number of patterns and processing constraint provides delayed response. It is a challenging task to design a robust classification system under above constraints with high accuracy. In this Letter, to resolve this problem, a novel architecture for weightless neural networks (WNNs) has been proposed. It uses variable sized random access memories to optimise the memory usage and a modified binary TRIE data structure for reducing the test time. In addition, a bio-inspired-based genetic algorithm has been employed to improve the accuracy. The proposed architecture is experimented on various disease datasets using its software and hardware realisations. The experimental results prove that the proposed architecture achieves better performance in terms of accuracy, memory saving and test time as compared to standard WNNs. It also outperforms in terms of accuracy as compared to conventional neural network-based classifiers. The proposed architecture is a powerful part of most of the low-power wearable devices for the solution of memory, accuracy and time issues. PMID:28868148

Optimization of chlorine fluxing process for magnesium removal from molten aluminum

NASA Astrophysics Data System (ADS)

Fu, Qian

High-throughput and low operational cost are the keys to a successful industrial process. Much aluminum is now recycled in the form of used beverage cans and this aluminum is of alloys that contain high levels of magnesium. It is common practice to "demag" the metal by injecting chlorine that preferentially reacts with the magnesium. In the conventional chlorine fluxing processes, low reaction efficiency results in excessive reactive gas emissions. In this study, through an experimental investigation of the reaction kinetics involved in this process, a mathematical model is set up for the purpose of process optimization. A feedback controlled chlorine reduction process strategy is suggested for demagging the molten aluminum to the desired magnesium level without significant gas emissions. This strategy also needs the least modification of the existing process facility. The suggested process time will only be slightly longer than conventional methods and chlorine usage and emissions will be reduced. In order to achieve process optimization through novel designs in any fluxing process, a system is necessary for measuring the bubble distribution in liquid metals. An electro-resistivity probe described in the literature has low accuracy and its capability to measure bubble distribution has not yet been fully demonstrated. A capacitance bubble probe was designed for bubble measurements in molten metals. The probe signal was collected and processed digitally. Higher accuracy was obtained by higher discrimination against corrupted signals. A single-size bubble experiment in Belmont metal was designed to reveal the characteristic response of the capacitance probe. This characteristic response fits well with a theoretical model. It is suggested that using a properly designed deconvolution process, the actual bubble size distribution can be calculated. The capacitance probe was used to study some practical bubble generation devices. Preliminary results on bubble distribution generated by a porous plug in Belmont metal showed bubbles much bigger than those in a water model. Preliminary results in molten aluminum showed that the probe was applicable in this harsh environment. An interesting bubble coalescence phenomenon was also observed in both Belmont metal and molten aluminum.

Argon Bubble Transport and Capture in Continuous Casting with an External Magnetic Field Using GPU-Based Large Eddy Simulations

NASA Astrophysics Data System (ADS)

Jin, Kai

Continuous casting produces over 95% of steel in the world today, hence even small improvements to this important industrial process can have large economic impact. In the continuous casting of steel process, argon gas is usually injected at the slide gate or stopper rod to prevent clogging, but entrapped bubbles may cause defects in the final product. Many defects in this process are related to the transient fluid flow in the mold region of the caster. Electromagnetic braking (EMBr) device is often used at high casting speed to modify the mold flow, reduce the surface velocity and fluctuation. This work studies the physics in continuous casting process including effects of EMBr on the motion of fluid flow in the mold region, and transport and capture of bubbles in the solidification processes. A computational effective Reynolds-averaged Navier-Stokes (RANS) model and a high fidelity Large Eddy Simulation (LES) model are used to understand the motion of the molten steel flow. A general purpose multi-GPU Navier-Stokes solver, CUFLOW, is developed. A Coherent-Structure Smagorinsky LES model is implemented to model the turbulent flow. A two-way coupled Lagrangian particle tracking model is added to track the motion of argon bubbles. A particle/bubble capture model based on force balance at dendrite tips is validated and used to study the capture of argon bubbles by the solidifying steel shell. To investigate the effects of EMBr on the turbulent molten steel flow and bubble transport, an electrical potential method is implemented to solve the magnetohydrodynamics equations. Volume of Fluid (VOF) simulations are carried out to understand the additional resistance force on moving argon bubbles caused by adding transverse magnetic field. A modified drag coefficient is extrapolated from the results and used in the two-way coupled Eulerian-Lagrangian model to predict the argon bubble transport in a caster with EMBr. A hook capture model is developed to understand the effects of hooks on argon bubble capture.

Adaptive sampler

DOEpatents

Watson, B.L.; Aeby, I.

1980-08-26

An adaptive data compression device for compressing data is described. The device has a frequency content, including a plurality of digital filters for analyzing the content of the data over a plurality of frequency regions, a memory, and a control logic circuit for generating a variable rate memory clock corresponding to the analyzed frequency content of the data in the frequency region and for clocking the data into the memory in response to the variable rate memory clock.

In-memory interconnect protocol configuration registers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cheng, Kevin Y.; Roberts, David A.

Systems, apparatuses, and methods for moving the interconnect protocol configuration registers into the main memory space of a node. The region of memory used for storing the interconnect protocol configuration registers may also be made cacheable to reduce the latency of accesses to the interconnect protocol configuration registers. Interconnect protocol configuration registers which are used during a startup routine may be prefetched into the host's cache to make the startup routine more efficient. The interconnect protocol configuration registers for various interconnect protocols may include one or more of device capability tables, memory-side statistics (e.g., to support two-level memory data mappingmore » decisions), advanced memory and interconnect features such as repair resources and routing tables, prefetching hints, error correcting code (ECC) bits, lists of device capabilities, set and store base address, capability, device ID, status, configuration, capabilities, and other settings.« less

Opportunities for nonvolatile memory systems in extreme-scale high-performance computing

DOE PAGES

Vetter, Jeffrey S.; Mittal, Sparsh

2015-01-12

For extreme-scale high-performance computing systems, system-wide power consumption has been identified as one of the key constraints moving forward, where DRAM main memory systems account for about 30 to 50 percent of a node's overall power consumption. As the benefits of device scaling for DRAM memory slow, it will become increasingly difficult to keep memory capacities balanced with increasing computational rates offered by next-generation processors. However, several emerging memory technologies related to nonvolatile memory (NVM) devices are being investigated as an alternative for DRAM. Moving forward, NVM devices could offer solutions for HPC architectures. Researchers are investigating how to integratemore » these emerging technologies into future extreme-scale HPC systems and how to expose these capabilities in the software stack and applications. In addition, current results show several of these strategies could offer high-bandwidth I/O, larger main memory capacities, persistent data structures, and new approaches for application resilience and output postprocessing, such as transaction-based incremental checkpointing and in situ visualization, respectively.« less

A study on carbon nanotube bridge as a electromechanical memory device

NASA Astrophysics Data System (ADS)

Kang, Jeong Won; Ha Lee, Jun; Joo Lee, Hoong; Hwang, Ho Jung

2005-04-01

A nanoelectromechanical (NEM) nanotube random access memory (NRAM) device based on carbon nanotube (CNT) was investigated using atomistic simulations. For the CNT-based NEM memory, the mechanical properties of the CNT-bridge and van der Waals interactions between the CNT-bridge and substrate were very important. The critical amplitude of the CNT-bridge was 16% of the length of the CNT-bridge. As molecular dynamics time increased, the CNT-bridge went to the steady state under the electrostatic force with the damping of the potential and the kinetic energies of the CNT-bridge. The interatomic interaction between the CNT-bridge and substrate, value of the CNT-bridge slack, and damping rate of the CNT-bridge were very important for the operation of the NEM memory device as a nonvolatile memory.

Flexible graphene-PZT ferroelectric nonvolatile memory.

PubMed

Lee, Wonho; Kahya, Orhan; Toh, Chee Tat; Ozyilmaz, Barbaros; Ahn, Jong-Hyun

2013-11-29

We report the fabrication of a flexible graphene-based nonvolatile memory device using Pb(Zr0.35,Ti0.65)O3 (PZT) as the ferroelectric material. The graphene and PZT ferroelectric layers were deposited using chemical vapor deposition and sol–gel methods, respectively. Such PZT films show a high remnant polarization (Pr) of 30 μC cm−2 and a coercive voltage (Vc) of 3.5 V under a voltage loop over ±11 V. The graphene–PZT ferroelectric nonvolatile memory on a plastic substrate displayed an on/off current ratio of 6.7, a memory window of 6 V and reliable operation. In addition, the device showed one order of magnitude lower operation voltage range than organic-based ferroelectric nonvolatile memory after removing the anti-ferroelectric behavior incorporating an electrolyte solution. The devices showed robust operation in bent states of bending radii up to 9 mm and in cycling tests of 200 times. The devices exhibited remarkable mechanical properties and were readily integrated with plastic substrates for the production of flexible circuits.

Spin transport and spin torque in antiferromagnetic devices

DOE PAGES

Zelezny, J.; Wadley, P.; Olejnik, K.; ...

2018-03-02

Ferromagnets are key materials for sensing and memory applications. In contrast, antiferromagnets which represent the more common form of magnetically ordered materials, have found less practical application beyond their use for establishing reference magnetic orientations via exchange bias. This might change in the future due to the recent progress in materials research and discoveries of antiferromagnetic spintronic phenomena suitable for device applications. Experimental demonstration of the electrical switching and detection of the Néel order open a route towards memory devices based on antiferromagnets. Apart from the radiation and magnetic-field hardness, memory cells fabricated from antiferromagnets can be inherently multilevel, whichmore » could be used for neuromorphic computing. Switching speeds attainable in antiferromagnets far exceed those of ferromagnetic and semiconductor memory technologies. Here we review the recent progress in electronic spin-transport and spin-torque phenomena in antiferromagnets that are dominantly of the relativistic quantum mechanical origin. We discuss their utility in pure antiferromagnetic or hybrid ferromagnetic/antiferromagnetic memory devices.« less

Spin transport and spin torque in antiferromagnetic devices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zelezny, J.; Wadley, P.; Olejnik, K.

Ferromagnets are key materials for sensing and memory applications. In contrast, antiferromagnets which represent the more common form of magnetically ordered materials, have found less practical application beyond their use for establishing reference magnetic orientations via exchange bias. This might change in the future due to the recent progress in materials research and discoveries of antiferromagnetic spintronic phenomena suitable for device applications. Experimental demonstration of the electrical switching and detection of the Néel order open a route towards memory devices based on antiferromagnets. Apart from the radiation and magnetic-field hardness, memory cells fabricated from antiferromagnets can be inherently multilevel, whichmore » could be used for neuromorphic computing. Switching speeds attainable in antiferromagnets far exceed those of ferromagnetic and semiconductor memory technologies. Here we review the recent progress in electronic spin-transport and spin-torque phenomena in antiferromagnets that are dominantly of the relativistic quantum mechanical origin. We discuss their utility in pure antiferromagnetic or hybrid ferromagnetic/antiferromagnetic memory devices.« less

Monolayer optical memory cells based on artificial trap-mediated charge storage and release

NASA Astrophysics Data System (ADS)

Lee, Juwon; Pak, Sangyeon; Lee, Young-Woo; Cho, Yuljae; Hong, John; Giraud, Paul; Shin, Hyeon Suk; Morris, Stephen M.; Sohn, Jung Inn; Cha, Seungnam; Kim, Jong Min

2017-03-01

Monolayer transition metal dichalcogenides are considered to be promising candidates for flexible and transparent optoelectronics applications due to their direct bandgap and strong light-matter interactions. Although several monolayer-based photodetectors have been demonstrated, single-layered optical memory devices suitable for high-quality image sensing have received little attention. Here we report a concept for monolayer MoS2 optoelectronic memory devices using artificially-structured charge trap layers through the functionalization of the monolayer/dielectric interfaces, leading to localized electronic states that serve as a basis for electrically-induced charge trapping and optically-mediated charge release. Our devices exhibit excellent photo-responsive memory characteristics with a large linear dynamic range of ~4,700 (73.4 dB) coupled with a low OFF-state current (<4 pA), and a long storage lifetime of over 104 s. In addition, the multi-level detection of up to 8 optical states is successfully demonstrated. These results represent a significant step toward the development of future monolayer optoelectronic memory devices.

Spin transport and spin torque in antiferromagnetic devices

NASA Astrophysics Data System (ADS)

Železný, J.; Wadley, P.; Olejník, K.; Hoffmann, A.; Ohno, H.

2018-03-01

Ferromagnets are key materials for sensing and memory applications. In contrast, antiferromagnets, which represent the more common form of magnetically ordered materials, have found less practical application beyond their use for establishing reference magnetic orientations via exchange bias. This might change in the future due to the recent progress in materials research and discoveries of antiferromagnetic spintronic phenomena suitable for device applications. Experimental demonstration of the electrical switching and detection of the Néel order open a route towards memory devices based on antiferromagnets. Apart from the radiation and magnetic-field hardness, memory cells fabricated from antiferromagnets can be inherently multilevel, which could be used for neuromorphic computing. Switching speeds attainable in antiferromagnets far exceed those of ferromagnetic and semiconductor memory technologies. Here, we review the recent progress in electronic spin-transport and spin-torque phenomena in antiferromagnets that are dominantly of the relativistic quantum-mechanical origin. We discuss their utility in pure antiferromagnetic or hybrid ferromagnetic/antiferromagnetic memory devices.

Oxide Structure Dependence of SiO2/SiOx/3C-SiC/n-Type Si Nonvolatile Resistive Memory on Memory Operation Characteristics

NASA Astrophysics Data System (ADS)

Yamaguchi, Yuichiro; Shouji, Masatsugu; Suda, Yoshiyuki

2012-11-01

We have investigated the dependence of the oxide layer structure of our previously proposed metal/SiO2/SiOx/3C-SiC/n-Si/metal metal-insulator-semiconductor (MIS) resistive memory device on the memory operation characteristics. The current-voltage (I-V) measurement and X-ray photoemission spectroscopy results suggest that SiOx defect states mainly caused by the oxidation of 3C-SiC at temperatures below 1000 °C are related to the hysteresis memory behavior in the I-V curve. By restricting the SiOx interface region, the number of switching cycles and the on/off current ratio are more enhanced. Compared with a memory device formed by one-step or two-step oxidation of 3C-SiC, a memory device formed by one-step oxidation of Si/3C-SiC exhibits a more restrictive SiOx interface with a more definitive SiO2 layer and higher memory performances for both the endurance switching cycle and on/off current ratio.

CMOS compatible electrode materials selection in oxide-based memory devices

NASA Astrophysics Data System (ADS)

Zhuo, V. Y.-Q.; Li, M.; Guo, Y.; Wang, W.; Yang, Y.; Jiang, Y.; Robertson, J.

2016-07-01

Electrode materials selection guidelines for oxide-based memory devices are constructed from the combined knowledge of observed device operation characteristics, ab-initio calculations, and nano-material characterization. It is demonstrated that changing the top electrode material from Ge to Cr to Ta in the Ta2O5-based memory devices resulted in a reduction of the operation voltages and current. Energy Dispersed X-ray (EDX) Spectrometer analysis clearly shows that the different top electrode materials scavenge oxygen ions from the Ta2O5 memory layer at various degrees, leading to different oxygen vacancy concentrations within the Ta2O5, thus the observed trends in the device performance. Replacing the Pt bottom electrode material with CMOS compatible materials (Ru and Ir) further reduces the power consumption and can be attributed to the modification of the Schottky barrier height and oxygen vacancy concentration at the electrode/oxide interface. Both trends in the device performance and EDX results are corroborated by the ab-initio calculations which reveal that the electrode material tunes the oxygen vacancy concentration via the oxygen chemical potential and defect formation energy. This experimental-theoretical approach strongly suggests that the proper selection of CMOS compatible electrode materials will create the critical oxygen vacancy concentration to attain low power memory performance.

A novel method to harvest Chlorella sp. by co-flocculation/air flotation.

PubMed

Zhang, Haiyang; Lin, Zhe; Tan, Daoyong; Liu, Chunhua; Kuang, Yali; Li, Zhu

2017-01-01

To develop a more effective dissolved air flotation process for harvesting microalgae biomass, a co-flocculation/air flotation (CAF) system was developed that uses an ejector followed by a helix tube flocculation reactor (HTFR) as a co-flocculation device to harvest Chlorella sp. 64.01. The optimal size distribution of micro-bubbles and an air release efficiency of 96 % were obtained when the flow ratio of inlet fluid (raw water) to motive fluid (saturated water) of the ejector was 0.14. With a reaction time of 24 s in the HTFR, microalgae cells and micro-bubbles were well flocculated, and these aerated flocs caused a fast rising velocity (96 m/h) and high harvesting efficiency (94 %). In a CAF process, micro-bubbles can be encapsulated into microalgae flocs, which makes aerated flocs more stable. CAF is an effective approach to harvesting microalgae.

Analogue spin-orbit torque device for artificial-neural-network-based associative memory operation

NASA Astrophysics Data System (ADS)

Borders, William A.; Akima, Hisanao; Fukami, Shunsuke; Moriya, Satoshi; Kurihara, Shouta; Horio, Yoshihiko; Sato, Shigeo; Ohno, Hideo

2017-01-01

We demonstrate associative memory operations reminiscent of the brain using nonvolatile spintronics devices. Antiferromagnet-ferromagnet bilayer-based Hall devices, which show analogue-like spin-orbit torque switching under zero magnetic fields and behave as artificial synapses, are used. An artificial neural network is used to associate memorized patterns from their noisy versions. We develop a network consisting of a field-programmable gate array and 36 spin-orbit torque devices. An effect of learning on associative memory operations is successfully confirmed for several 3 × 3-block patterns. A discussion on the present approach for realizing spintronics-based artificial intelligence is given.

Experiments and Modeling of Evaporating/Condensing Menisci

NASA Technical Reports Server (NTRS)

Plawsky, Joel; Wayner, Peter C., Jr.

2013-01-01

Discuss the Constrained Vapor Bubble (CVB) experiment and how it aims to achieve a better understanding of the physics of evaporation and condensation and how they affect cooling processes in microgravity using a remotely controlled microscope and a small cooling device.

Bubble Eliminator Based on Centrifugal Flow

NASA Technical Reports Server (NTRS)

Gonda, Steve R.; Tsao, Yow-Min D.; Lee, Wenshan

2004-01-01

The fluid bubble eliminator (FBE) is a device that removes gas bubbles from a flowing liquid. The FBE contains no moving parts and does not require any power input beyond that needed to pump the liquid. In the FBE, the buoyant force for separating the gas from the liquid is provided by a radial pressure gradient associated with a centrifugal flow of the liquid and any entrained bubbles. A device based on a similar principle is described in Centrifugal Adsorption Cartridge System (MSC- 22863), which appears on page 48 of this issue. The FBE was originally intended for use in filtering bubbles out of a liquid flowing relatively slowly in a bioreactor system in microgravity. Versions that operate in normal Earth gravitation at greater flow speeds may also be feasible. The FBE (see figure) is constructed as a cartridge that includes two concentric cylinders with flanges at the ends. The outer cylinder is an impermeable housing; the inner cylinder comprises a gas-permeable, liquid-impermeable membrane covering a perforated inner tube. Multiple spiral disks that collectively constitute a spiral ramp are mounted in the space between the inner and outer cylinders. The liquid enters the FBE through an end flange, flows in the annular space between the cylinders, and leaves through the opposite end flange. The spiral disks channel the liquid into a spiral flow, the circumferential component of which gives rise to the desired centrifugal effect. The resulting radial pressure gradient forces the bubbles radially inward; that is, toward the inner cylinder. At the inner cylinder, the gas-permeable, liquid-impermeable membrane allows the bubbles to enter the perforated inner tube while keeping the liquid in the space between the inner and outer cylinders. The gas thus collected can be vented via an endflange connection to the inner tube. The centripetal acceleration (and thus the radial pressure gradient) is approximately proportional to the square of the flow speed and approximately inversely proportional to an effective radius of the annular space. For a given FBE geometry, one could increase the maximum rate at which gas could be removed by increasing the rate of flow to obtain more centripetal acceleration. In experiments and calculations oriented toward the original microgravitational application, centripetal accelerations between 0.001 and 0.012 g [where g normal Earth gravitation (.9.8 m/s2)] were considered. For operation in normal Earth gravitation, it would likely be necessary to choose the FBE geometry and the rate of flow to obtain centripetal acceleration comparable to or greater than g.

JPRS report: Science and Technology. Europe and Latin America

NASA Astrophysics Data System (ADS)

1988-01-01

Articles from the popular and trade press are included on the following subjects: advanced materials, aerospace industry, automotive industry, biotechnology, computers, factory automation and robotics, microelectronics, and science and technology policy. The aerospace articles discuss briefly and in a nontechnical way the SAGEM bubble memories for space applications, Ariane V new testing facilities, innovative technologies of TDF-1 satellite, and the restructuring of the Aviation Division at France's Aerospatiale.

An ultrafast programmable electrical tester for enabling time-resolved, sub-nanosecond switching dynamics and programming of nanoscale memory devices.

PubMed

Shukla, Krishna Dayal; Saxena, Nishant; Manivannan, Anbarasu

2017-12-01

Recent advancements in commercialization of high-speed non-volatile electronic memories including phase change memory (PCM) have shown potential not only for advanced data storage but also for novel computing concepts. However, an in-depth understanding on ultrafast electrical switching dynamics is a key challenge for defining the ultimate speed of nanoscale memory devices that demands for an unconventional electrical setup, specifically capable of handling extremely fast electrical pulses. In the present work, an ultrafast programmable electrical tester (PET) setup has been developed exceptionally for unravelling time-resolved electrical switching dynamics and programming characteristics of nanoscale memory devices at the picosecond (ps) time scale. This setup consists of novel high-frequency contact-boards carefully designed to capture extremely fast switching transient characteristics within 200 ± 25 ps using time-resolved current-voltage measurements. All the instruments in the system are synchronized using LabVIEW, which helps to achieve various programming characteristics such as voltage-dependent transient parameters, read/write operations, and endurance test of memory devices systematically using short voltage pulses having pulse parameters varied from 1 ns rise/fall time and 1.5 ns pulse width (full width half maximum). Furthermore, the setup has successfully demonstrated strikingly one order faster switching characteristics of Ag 5 In 5 Sb 60 Te 30 (AIST) PCM devices within 250 ps. Hence, this novel electrical setup would be immensely helpful for realizing the ultimate speed limits of various high-speed memory technologies for future computing.

An ultrafast programmable electrical tester for enabling time-resolved, sub-nanosecond switching dynamics and programming of nanoscale memory devices

NASA Astrophysics Data System (ADS)

Shukla, Krishna Dayal; Saxena, Nishant; Manivannan, Anbarasu

2017-12-01

Recent advancements in commercialization of high-speed non-volatile electronic memories including phase change memory (PCM) have shown potential not only for advanced data storage but also for novel computing concepts. However, an in-depth understanding on ultrafast electrical switching dynamics is a key challenge for defining the ultimate speed of nanoscale memory devices that demands for an unconventional electrical setup, specifically capable of handling extremely fast electrical pulses. In the present work, an ultrafast programmable electrical tester (PET) setup has been developed exceptionally for unravelling time-resolved electrical switching dynamics and programming characteristics of nanoscale memory devices at the picosecond (ps) time scale. This setup consists of novel high-frequency contact-boards carefully designed to capture extremely fast switching transient characteristics within 200 ± 25 ps using time-resolved current-voltage measurements. All the instruments in the system are synchronized using LabVIEW, which helps to achieve various programming characteristics such as voltage-dependent transient parameters, read/write operations, and endurance test of memory devices systematically using short voltage pulses having pulse parameters varied from 1 ns rise/fall time and 1.5 ns pulse width (full width half maximum). Furthermore, the setup has successfully demonstrated strikingly one order faster switching characteristics of Ag5In5Sb60Te30 (AIST) PCM devices within 250 ps. Hence, this novel electrical setup would be immensely helpful for realizing the ultimate speed limits of various high-speed memory technologies for future computing.

Review of radiation effects on ReRAM devices and technology

NASA Astrophysics Data System (ADS)

Gonzalez-Velo, Yago; Barnaby, Hugh J.; Kozicki, Michael N.

2017-08-01

A review of the ionizing radiation effects on resistive random access memory (ReRAM) technology and devices is presented in this article. The review focuses on vertical devices exhibiting bipolar resistance switching, devices that have already exhibited interesting properties and characteristics for memory applications and, in particular, for non-volatile memory applications. Non-volatile memories are important devices for any type of electronic and embedded system, as they are for space applications. In such applications, specific environmental issues related to the existence of cosmic rays and Van Allen radiation belts around the Earth contribute to specific failure mechanisms related to the energy deposition induced by such ionizing radiation. Such effects are important in non-volatile memory as the current leading technology, i.e. flash-based technology, is sensitive to the total ionizing dose (TID) and single-event effects. New technologies such as ReRAM, if competing with or complementing the existing non-volatile area of memories from the point of view of performance, also have to exhibit great reliability for use in radiation environments such as space. This has driven research on the radiation effects of such ReRAM technology, on both the conductive-bridge RAM as well as the valence-change memories, or OxRAM variants of the technology. Initial characterizations of ReRAM technology showed a high degree of resilience to TID, developing researchers’ interest in characterizing such resilience as well as investigating the cause of such behavior. The state of the art of such research is reviewed in this article.

A High-Performance Optical Memory Array Based on Inhomogeneity of Organic Semiconductors.

PubMed

Pei, Ke; Ren, Xiaochen; Zhou, Zhiwen; Zhang, Zhichao; Ji, Xudong; Chan, Paddy Kwok Leung

2018-03-01

Organic optical memory devices keep attracting intensive interests for diverse optoelectronic applications including optical sensors and memories. Here, flexible nonvolatile optical memory devices are developed based on the bis[1]benzothieno[2,3-d;2',3'-d']naphtho[2,3-b;6,7-b']dithiophene (BBTNDT) organic field-effect transistors with charge trapping centers induced by the inhomogeneity (nanosprouts) of the organic thin film. The devices exhibit average mobility as high as 7.7 cm 2 V -1 s -1 , photoresponsivity of 433 A W -1 , and long retention time for more than 6 h with a current ratio larger than 10 6 . Compared with the standard floating gate memory transistors, the BBTNDT devices can reduce the fabrication complexity, cost, and time. Based on the reasonable performance of the single device on a rigid substrate, the optical memory transistor is further scaled up to a 16 × 16 active matrix array on a flexible substrate with operating voltage less than 3 V, and it is used to map out 2D optical images. The findings reveal the potentials of utilizing [1]benzothieno[3,2-b][1]benzothiophene (BTBT) derivatives as organic semiconductors for high-performance optical memory transistors with a facile structure. A detailed study on the charge trapping mechanism in the derivatives of BTBT materials is also provided, which is closely related to the nanosprouts formed inside the organic active layer. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Carbon nanomaterials for non-volatile memories

NASA Astrophysics Data System (ADS)

Ahn, Ethan C.; Wong, H.-S. Philip; Pop, Eric

2018-03-01

Carbon can create various low-dimensional nanostructures with remarkable electronic, optical, mechanical and thermal properties. These features make carbon nanomaterials especially interesting for next-generation memory and storage devices, such as resistive random access memory, phase-change memory, spin-transfer-torque magnetic random access memory and ferroelectric random access memory. Non-volatile memories greatly benefit from the use of carbon nanomaterials in terms of bit density and energy efficiency. In this Review, we discuss sp2-hybridized carbon-based low-dimensional nanostructures, such as fullerene, carbon nanotubes and graphene, in the context of non-volatile memory devices and architectures. Applications of carbon nanomaterials as memory electrodes, interfacial engineering layers, resistive-switching media, and scalable, high-performance memory selectors are investigated. Finally, we compare the different memory technologies in terms of writing energy and time, and highlight major challenges in the manufacturing, integration and understanding of the physical mechanisms and material properties.

The strain and thermal induced tunable charging phenomenon in low power flexible memory arrays with a gold nanoparticle monolayer

NASA Astrophysics Data System (ADS)

Zhou, Ye; Han, Su-Ting; Xu, Zong-Xiang; Roy, V. A. L.

2013-02-01

The strain and temperature dependent memory effect of organic memory transistors on plastic substrates has been investigated under ambient conditions. The gold (Au) nanoparticle monolayer was prepared and embedded in an atomic layer deposited aluminum oxide (Al2O3) as the charge trapping layer. The devices exhibited low operation voltage, reliable memory characteristics and long data retention time. Experimental analysis of the programming and erasing behavior at various bending states showed the relationship between strain and charging capacity. Thermal-induced effects on these memory devices have also been analyzed. The mobility shows ~200% rise and the memory window increases from 1.48 V to 1.8 V when the temperature rises from 20 °C to 80 °C due to thermally activated transport. The retention capability of the devices decreases with the increased working temperature. Our findings provide a better understanding of flexible organic memory transistors under various operating temperatures and validate their applications in various areas such as temperature sensors, temperature memory or advanced electronic circuits. Furthermore, the low temperature processing procedures of the key elements (Au nanoparticle monolayer and Al2O3 dielectric layer) could be potentially integrated with large area flexible electronics.The strain and temperature dependent memory effect of organic memory transistors on plastic substrates has been investigated under ambient conditions. The gold (Au) nanoparticle monolayer was prepared and embedded in an atomic layer deposited aluminum oxide (Al2O3) as the charge trapping layer. The devices exhibited low operation voltage, reliable memory characteristics and long data retention time. Experimental analysis of the programming and erasing behavior at various bending states showed the relationship between strain and charging capacity. Thermal-induced effects on these memory devices have also been analyzed. The mobility shows ~200% rise and the memory window increases from 1.48 V to 1.8 V when the temperature rises from 20 °C to 80 °C due to thermally activated transport. The retention capability of the devices decreases with the increased working temperature. Our findings provide a better understanding of flexible organic memory transistors under various operating temperatures and validate their applications in various areas such as temperature sensors, temperature memory or advanced electronic circuits. Furthermore, the low temperature processing procedures of the key elements (Au nanoparticle monolayer and Al2O3 dielectric layer) could be potentially integrated with large area flexible electronics. Electronic supplementary information (ESI) available: UV-vis spectrum of Au nanoparticle aqueous solution, transfer characteristics of the transistors without inserting an Au nanoparticle monolayer, AFM image of the pentacene layer, transfer characteristics at different program voltages and memory windows with respect to the P/E voltage. See DOI: 10.1039/c2nr32579a

High-performance flexible resistive memory devices based on Al2O3:GeOx composite

NASA Astrophysics Data System (ADS)

Behera, Bhagaban; Maity, Sarmistha; Katiyar, Ajit K.; Das, Samaresh

2018-05-01

In this study a resistive switching random access memory device using Al2O3:GeOx composite thin films on flexible substrate is presented. A bipolar switching characteristic was observed for the co-sputter deposited Al2O3:GeOx composite thin films. Al/Al2O3:GeOx/ITO/PET memory device shows excellent ON/OFF ratio (∼104) and endurance (>500 cycles). GeOx nanocrystals embedded in the Al2O3 matrix have been found to play a significant role in enhancing the switching characteristics by facilitating oxygen vacancy formation. Mechanical endurance was retained even after several bending. The conduction mechanism of the device was qualitatively discussed by considering Ohmic and SCLC conduction. This flexible device is a potential candidate for next-generation electronics device.

4D Printing of Shape Memory-Based Personalized Endoluminal Medical Devices.

PubMed

Zarek, Matt; Mansour, Nicola; Shapira, Shir; Cohn, Daniel

2017-01-01

The convergence of additive manufacturing and shape-morphing materials is promising for the advancement of personalized medical devices. The capability to transform 3D objects from one shape to another, right off the print bed, is known as 4D printing. Shape memory thermosets can be tailored to have a range of thermomechanical properties favorable to medical devices, but processing them is a challenge because they are insoluble and do not flow at any temperature. This study presents here a strategy to capitalize on a series of medical imaging modalities to construct a printable shape memory endoluminal device, exemplified by a tracheal stent. A methacrylated polycaprolactone precursor with a molecular weight of 10 000 g mol -1 is printed with a UV-LED stereolithography printer based on anatomical data. This approach converges with the zeitgeist of personalized medicine and it is anticipated that it will broadly expand the application of shape memory-exhibiting biomedical devices to myriad clinical indications. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Epitaxial Growth of Thin Ferroelectric Polymer Films on Graphene Layer for Fully Transparent and Flexible Nonvolatile Memory.

PubMed

Kim, Kang Lib; Lee, Wonho; Hwang, Sun Kak; Joo, Se Hun; Cho, Suk Man; Song, Giyoung; Cho, Sung Hwan; Jeong, Beomjin; Hwang, Ihn; Ahn, Jong-Hyun; Yu, Young-Jun; Shin, Tae Joo; Kwak, Sang Kyu; Kang, Seok Ju; Park, Cheolmin

2016-01-13

Enhancing the device performance of organic memory devices while providing high optical transparency and mechanical flexibility requires an optimized combination of functional materials and smart device architecture design. However, it remains a great challenge to realize fully functional transparent and mechanically durable nonvolatile memory because of the limitations of conventional rigid, opaque metal electrodes. Here, we demonstrate ferroelectric nonvolatile memory devices that use graphene electrodes as the epitaxial growth substrate for crystalline poly(vinylidene fluoride-trifluoroethylene) (PVDF-TrFE) polymer. The strong crystallographic interaction between PVDF-TrFE and graphene results in the orientation of the crystals with distinct symmetry, which is favorable for polarization switching upon the electric field. The epitaxial growth of PVDF-TrFE on a graphene layer thus provides excellent ferroelectric performance with high remnant polarization in metal/ferroelectric polymer/metal devices. Furthermore, a fully transparent and flexible array of ferroelectric field effect transistors was successfully realized by adopting transparent poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] semiconducting polymer.

Investing the effectiveness of retention performance in a non-volatile floating gate memory device with a core-shell structure of CdSe nanoparticles

NASA Astrophysics Data System (ADS)

Lee, Dong-Hoon; Kim, Jung-Min; Lim, Ki-Tae; Cho, Hyeong Jun; Bang, Jin Ho; Kim, Yong-Sang

2016-03-01

In this paper, we empirically investigate the retention performance of organic non-volatile floating gate memory devices with CdSe nanoparticles (NPs) as charge trapping elements. Core-structured CdSe NPs or core-shell-structured ZnS/CdSe NPs were mixed in PMMA and their performance in pentacene based device was compared. The NPs and self-organized thin tunneling PMMA inside the devices exhibited hysteresis by trapping hole during capacitance-voltage characterization. Despite of core-structured NPs showing a larger memory window, the retention time was too short to be adopted by an industry. By contrast core-shell structured NPs showed an improved retention time of >10000 seconds than core-structure NCs. Based on these results and the energy band structure, we propose the retention mechanism of each NPs. This investigation of retention performance provides a comparative and systematic study of the charging/discharging behaviors of NPs based memory devices. [Figure not available: see fulltext.

Fully transparent, non-volatile bipolar resistive memory based on flexible copolyimide films

NASA Astrophysics Data System (ADS)

Yu, Hwan-Chul; Kim, Moon Young; Hong, Minki; Nam, Kiyong; Choi, Ju-Young; Lee, Kwang-Hun; Baeck, Kyoung Koo; Kim, Kyoung-Kook; Cho, Soohaeng; Chung, Chan-Moon

2017-01-01

Partially aliphatic homopolyimides and copolyimides were prepared from rel-(1'R,3S,5'S)-spiro[furan-3(2H),6'-[3]oxabicyclo[3.2.1]octane]-2,2',4',5(4H)-tetrone (DAn), 2,6-diaminoanthracene (AnDA), and 4,4'-oxydianiline (ODA) by varying the molar ratio of AnDA and ODA. We utilized these polyimide films as the resistive switching layer in transparent memory devices. While WORM memory behavior was obtained with the PI-A100-O0-based device (molar feed ratio of DAn : AnDA : ODA = 1 : 1 : 0), the PI-A70-O30-based device (molar feed ratio of DAn : AnDA : ODA = 1 : 0.7 : 0.3) exhibited bipolar resistive switching behavior with stable retention for 104 s. This result implies that the memory properties can be controlled by changing the polyimide composition. The two devices prepared from PI-A100-O0 and PI-A70-O30 showed over 90% transmittance in the visible wavelength range from 400 to 800 nm. The behavior of the memory devices is considered to be governed by trap-controlled, space-charge limited conduction (SCLC) and local filament formation. [Figure not available: see fulltext.

Capacitance-voltage measurement in memory devices using ferroelectric polymer

NASA Astrophysics Data System (ADS)

Nguyen, Chien A.; Lee, Pooi See

2006-01-01

Application of thin polymer film as storing mean for non-volatile memory devices is investigated. Capacitance-voltage (C-V) measurement of metal-ferroelectric-metal device using ferroelectric copolymer P(VDF-TrFE) as dielectric layer shows stable 'butter-fly' curve. The two peaks in C-V measurement corresponding to the largest capacitance are coincidental at the coercive voltages that give rise to zero polarization in the polarization hysteresis measurement. By comparing data of C-V and P-E measurement, a correlation between two types of hysteresis is established in which it reveals simultaneous electrical processes occurring inside the device. These processes are caused by the response of irreversible and reversible polarization to the applied electric field that can be used to present a memory window. The memory effect of ferroelectric copolymer is further demonstrated for fabricating polymeric non-volatile memory devices using metal-ferroelectric-insulator-semiconductor structure (MFIS). By applying different sweeping voltages at the gate, bidirectional flat-band voltage shift is observed in the ferroelectric capacitor. The asymmetrical shift after negative sweeping is resulted from charge accumulation at the surface of Si substrate caused by the dipole direction in the polymer layer. The effect is reversed for positive voltage sweeping.

Investigation of resistive switching behaviours in WO3-based RRAM devices

NASA Astrophysics Data System (ADS)

Li, Ying-Tao; Long, Shi-Bing; Lü, Hang-Bing; Liu, Qi; Wang, Qin; Wang, Yan; Zhang, Sen; Lian, Wen-Tai; Liu, Su; Liu, Ming

2011-01-01

In this paper, a WO3-based resistive random access memory device composed of a thin film of WO3 sandwiched between a copper top and a platinum bottom electrodes is fabricated by electron beam evaporation at room temperature. The reproducible resistive switching, low power consumption, multilevel storage possibility, and good data retention characteristics demonstrate that the Cu/WO3/Pt memory device is very promising for future nonvolatile memory applications. The formation and rupture of localised conductive filaments is suggested to be responsible for the observed resistive switching behaviours.

Counteracting negative venous line pressures to avoid arterial air bubbles: an experimental study comparing two different types of miniaturized extracorporeal perfusion systems.

PubMed

Aboud, Anas; Mederos-Dahms, Hendrikje; Liebing, Kai; Zittermann, Armin; Schubert, Harald; Murray, Edward; Renner, Andre; Gummert, Jan; Börgermann, Jochen

2015-05-29

Because of its low rate of clinical complications, miniaturized extracorporeal perfusion systems (MEPS) are frequently used in heart centers worldwide. However, many recent studies refer to the higher probability of gaseous microemboli formation by MEPS, caused by subzero pressure values. This is the main reason why various de-airing devices were developed for today's perfusion systems. In the present study, we investigated the potential benefits of a simple one-way-valve connected to a volume replacement reservoir (OVR) for volume and pressure compensation. In an experimental study on 26 pigs, we compared MEPS (n = 13) with MEPS plus OVR (n = 13). Except OVR, perfusion equipment was identical in both groups. Primary endpoints were pressure values in the venous line and the right atrium as well as the number and volume of air bubbles. Secondary endpoints were biochemical parameters of systemic inflammatory response, ischemia, hemodilution and hemolysis. One animal was lost in the MEPS + OVR group. In the MEPS + OVR group no pressure values below -150 mmHg in the venous line and no values under -100 mmHg in right atrium were noticed. On the contrary, nearly 20% of venous pressure values in the MEPS group were below -150 and approximately 10% of right atrial pressure values were below -100 mmHg. Compared with the MEPS group, the bubble counter device showed lower numbers of arterial air bubbles in the MEPS + OVR group (mean ± SD: 13444 ± 5709 vs. 1 ± 2, respectively; p < 0.001). In addition, bubble volume was significantly lower in the MEPS + OVR group than in the MEPS group (mean ± SD: 1522 ± 654 μl vs. 4 ± 6 μl, respectively; p < 0.001). The proinflammatory cytokine interleukin-6 and biochemical indices of cardiac ischemia (creatine kinase, and troponin I) were comparable between both groups. The use of a miniaturized perfusion system with a volume replacement reservoir is able to counteract excessive negative venous line pressures and to reduce the number and volume of arterial air bubbles. This approach may lead to a lower rate of neurological complications.

Continuous microbial cultures maintained by electronically-controlled device

NASA Technical Reports Server (NTRS)

Eisler, W. J., Jr.; Webb, R. B.

1967-01-01

Photocell-controlled instrument maintains microbial culture. It uses commercially available chemostat glassware, provides adequate aeration through bubbling of the culture, maintains the population size and density, continuously records growth rates over small increments of time, and contains a simple, sterilizable nutrient control mechanism.

Overview of emerging nonvolatile memory technologies

PubMed Central

2014-01-01

Nonvolatile memory technologies in Si-based electronics date back to the 1990s. Ferroelectric field-effect transistor (FeFET) was one of the most promising devices replacing the conventional Flash memory facing physical scaling limitations at those times. A variant of charge storage memory referred to as Flash memory is widely used in consumer electronic products such as cell phones and music players while NAND Flash-based solid-state disks (SSDs) are increasingly displacing hard disk drives as the primary storage device in laptops, desktops, and even data centers. The integration limit of Flash memories is approaching, and many new types of memory to replace conventional Flash memories have been proposed. Emerging memory technologies promise new memories to store more data at less cost than the expensive-to-build silicon chips used by popular consumer gadgets including digital cameras, cell phones and portable music players. They are being investigated and lead to the future as potential alternatives to existing memories in future computing systems. Emerging nonvolatile memory technologies such as magnetic random-access memory (MRAM), spin-transfer torque random-access memory (STT-RAM), ferroelectric random-access memory (FeRAM), phase-change memory (PCM), and resistive random-access memory (RRAM) combine the speed of static random-access memory (SRAM), the density of dynamic random-access memory (DRAM), and the nonvolatility of Flash memory and so become very attractive as another possibility for future memory hierarchies. Many other new classes of emerging memory technologies such as transparent and plastic, three-dimensional (3-D), and quantum dot memory technologies have also gained tremendous popularity in recent years. Subsequently, not an exaggeration to say that computer memory could soon earn the ultimate commercial validation for commercial scale-up and production the cheap plastic knockoff. Therefore, this review is devoted to the rapidly developing new class of memory technologies and scaling of scientific procedures based on an investigation of recent progress in advanced Flash memory devices. PMID:25278820

Overview of emerging nonvolatile memory technologies.

PubMed

Meena, Jagan Singh; Sze, Simon Min; Chand, Umesh; Tseng, Tseung-Yuen

2014-01-01

Nonvolatile memory technologies in Si-based electronics date back to the 1990s. Ferroelectric field-effect transistor (FeFET) was one of the most promising devices replacing the conventional Flash memory facing physical scaling limitations at those times. A variant of charge storage memory referred to as Flash memory is widely used in consumer electronic products such as cell phones and music players while NAND Flash-based solid-state disks (SSDs) are increasingly displacing hard disk drives as the primary storage device in laptops, desktops, and even data centers. The integration limit of Flash memories is approaching, and many new types of memory to replace conventional Flash memories have been proposed. Emerging memory technologies promise new memories to store more data at less cost than the expensive-to-build silicon chips used by popular consumer gadgets including digital cameras, cell phones and portable music players. They are being investigated and lead to the future as potential alternatives to existing memories in future computing systems. Emerging nonvolatile memory technologies such as magnetic random-access memory (MRAM), spin-transfer torque random-access memory (STT-RAM), ferroelectric random-access memory (FeRAM), phase-change memory (PCM), and resistive random-access memory (RRAM) combine the speed of static random-access memory (SRAM), the density of dynamic random-access memory (DRAM), and the nonvolatility of Flash memory and so become very attractive as another possibility for future memory hierarchies. Many other new classes of emerging memory technologies such as transparent and plastic, three-dimensional (3-D), and quantum dot memory technologies have also gained tremendous popularity in recent years. Subsequently, not an exaggeration to say that computer memory could soon earn the ultimate commercial validation for commercial scale-up and production the cheap plastic knockoff. Therefore, this review is devoted to the rapidly developing new class of memory technologies and scaling of scientific procedures based on an investigation of recent progress in advanced Flash memory devices.

Memristive effects in oxygenated amorphous carbon nanodevices

NASA Astrophysics Data System (ADS)

Bachmann, T. A.; Koelmans, W. W.; Jonnalagadda, V. P.; Le Gallo, M.; Santini, C. A.; Sebastian, A.; Eleftheriou, E.; Craciun, M. F.; Wright, C. D.

2018-01-01

Computing with resistive-switching (memristive) memory devices has shown much recent progress and offers an attractive route to circumvent the von-Neumann bottleneck, i.e. the separation of processing and memory, which limits the performance of conventional computer architectures. Due to their good scalability and nanosecond switching speeds, carbon-based resistive-switching memory devices could play an important role in this respect. However, devices based on elemental carbon, such as tetrahedral amorphous carbon or ta-C, typically suffer from a low cycling endurance. A material that has proven to be capable of combining the advantages of elemental carbon-based memories with simple fabrication methods and good endurance performance for binary memory applications is oxygenated amorphous carbon, or a-CO x . Here, we examine the memristive capabilities of nanoscale a-CO x devices, in particular their ability to provide the multilevel and accumulation properties that underpin computing type applications. We show the successful operation of nanoscale a-CO x memory cells for both the storage of multilevel states (here 3-level) and for the provision of an arithmetic accumulator. We implement a base-16, or hexadecimal, accumulator and show how such a device can carry out hexadecimal arithmetic and simultaneously store the computed result in the self-same a-CO x cell, all using fast (sub-10 ns) and low-energy (sub-pJ) input pulses.

15 CFR 740.19 - Consumer Communications Devices (CCD).

Code of Federal Regulations, 2010 CFR

2010-01-01

...; (11) Memory devices classified under ECCN 5A992 or designated EAR99; (12) “Information security... 5D992 or designated EAR99; (13) Digital cameras and memory cards classified under ECCN 5A992 or...

Shape memory alloy actuator

DOEpatents

Varma, Venugopal K.

2001-01-01

An actuator for cycling between first and second positions includes a first shaped memory alloy (SMA) leg, a second SMA leg. At least one heating/cooling device is thermally connected to at least one of the legs, each heating/cooling device capable of simultaneously heating one leg while cooling the other leg. The heating/cooling devices can include thermoelectric and/or thermoionic elements.

A High-Value, Low-Cost Bubble Continuous Positive Airway Pressure System for Low-Resource Settings: Technical Assessment and Initial Case Reports

PubMed Central

Brown, Jocelyn; Machen, Heather; Kawaza, Kondwani; Mwanza, Zondiwe; Iniguez, Suzanne; Lang, Hans; Gest, Alfred; Kennedy, Neil; Miros, Robert; Richards-Kortum, Rebecca; Molyneux, Elizabeth; Oden, Maria

2013-01-01

Acute respiratory infections are the leading cause of global child mortality. In the developing world, nasal oxygen therapy is often the only treatment option for babies who are suffering from respiratory distress. Without the added pressure of bubble Continuous Positive Airway Pressure (bCPAP) which helps maintain alveoli open, babies struggle to breathe and can suffer serious complications, and frequently death. A stand-alone bCPAP device can cost $6,000, too expensive for most developing world hospitals. Here, we describe the design and technical evaluation of a new, rugged bCPAP system that can be made in small volume for a cost-of-goods of approximately $350. Moreover, because of its simple design—consumer-grade pumps, medical tubing, and regulators—it requires only the simple replacement of a <$1 diaphragm approximately every 2 years for maintenance. The low-cost bCPAP device delivers pressure and flow equivalent to those of a reference bCPAP system used in the developed world. We describe the initial clinical cases of a child with bronchiolitis and a neonate with respiratory distress who were treated successfully with the new bCPAP device. PMID:23372661

Surface Engineering of ITO Substrates to Improve the Memory Performance of an Asymmetric Conjugated Molecule with a Side Chain.

PubMed

Hou, Xiang; Cheng, Xue-Feng; Xiao, Xin; He, Jing-Hui; Xu, Qing-Feng; Li, Hua; Li, Na-Jun; Chen, Dong-Yun; Lu, Jian-Mei

2017-09-05

Organic multilevel random resistive access memory (RRAM) devices with an electrode/organic layer/electrode sandwich-like structure suffer from poor reproducibility, such as low effective ternary device yields and a wide threshold voltage distribution, and improvements through organic material renovation are rather limited. In contrast, engineering of the electrode surfaces rather than molecule design has been demonstrated to boost the performance of organic electronics effectively. Herein, we introduce surface engineering into organic multilevel RRAMs to enhance their ternary memory performance. A new asymmetric conjugated molecule composed of phenothiazine and malononitrile with a side chain (PTZ-PTZO-CN) was fabricated in an indium tin oxide (ITO)/PTZ-PTZO-CN/Al sandwich-like memory device. Modification of the ITO substrate with a phosphonic acid (PA) prior to device fabrication increased the ternary device yield (the ratio of effective ternary device) and narrowed the threshold voltage distribution. The crystallinity analysis revealed that PTZ-PTZO-CN grown on untreated ITO crystallized into two phases. After the surface engineering of ITO, this crystalline ambiguity was eliminated and a sole crystal phase was obtained that was the same as in the powder state. The unified crystal structure and improved grain mosaicity resulted in a lower threshold voltage and, therefore, a higher ternary device yield. Our result demonstrated that PA modification also improved the memory performance of an asymmetric conjugated molecule with a side chain. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Some investigations on the use of ultrasonics in travelling bubble cavitation control

NASA Astrophysics Data System (ADS)

Chatterjee, Dhiman; Arakeri, Vijay H.

2004-04-01

In this paper we report results from some investigations on the use of ultrasonics in controlling travelling bubble cavitation. Control of this type of cavitation, generated using a venturi device, has been achieved by manipulation of potential nuclei using a piezoelectric device, termed the Ultrasonic Nuclei Manipulator (UNM). The performance of the UNM, activated in continuous-wave (CW) and pulsed modes, has been studied over a range of dissolved gas concentration (C). The performance under CW-excitation is found to depend sensitively on C, with lack of control in near-saturated water samples. Failure to control cavitation at C ≈ 1 under CW-excitation is suggested to be a result of bubble growth by rectified diffusion under these conditions. The pulsed mode of excitation of the UNM, in such cases, seems to be a very promising alternative. Further improvement is observed by using two piezoelectric crystals, one driven in the CW-mode and the second in pulsed mode, as the UNM. Through carefully designed experimentation, this has been traced to the movement of nuclei under the influence of Bjerknes forces. Besides reduction of noise, other measures of control have been identified and investigated. For example, it has been found that the maximum velocity achievable at the venturi throat can be increased from about 15 m s(-1) to about 22 m s(-1) with nuclei manipulation using ultrasonics.

A remotely operated drug delivery system with an electrolytic pump and a thermo-responsive valve

PubMed Central

Yi, Ying; Zaher, Amir; Yassine, Omar; Kosel, Jurgen; Foulds, Ian G.

2015-01-01

Implantable drug delivery devices are becoming attractive due to their abilities of targeted and controlled dose release. Currently, two important issues are functional lifetime and non-controlled drug diffusion. In this work, we present a drug delivery device combining an electrolytic pump and a thermo-responsive valve, which are both remotely controlled by an electromagnetic field (40.5 mT and 450 kHz). Our proposed device exhibits a novel operation mechanism for long-term therapeutic treatments using a solid drug in reservoir approach. Our device also prevents undesired drug liquid diffusions. When the electromagnetic field is on, the electrolysis-induced bubble drives the drug liquid towards the Poly (N-Isopropylacrylamide) (PNIPAM) valve that consists of PNIPAM and iron micro-particles. The heat generated by the iron micro-particles causes the PNIPAM to shrink, resulting in an open valve. When the electromagnetic field is turned off, the PNIPAM starts to swell. In the meantime, the bubbles are catalytically recombined into water, reducing the pressure inside the pumping chamber, which leads to the refilling of the fresh liquid from outside the device. A catalytic reformer is included, allowing more liquid refilling during the limited valve's closing time. The amount of body liquid that refills the drug reservoir can further dissolve the solid drug, forming a reproducible drug solution for the next dose. By repeatedly turning on and off the electromagnetic field, the drug dose can be cyclically released, and the exit port of the device is effectively controlled. PMID:26339328

Pulsed laser triggered high speed microfluidic switch

NASA Astrophysics Data System (ADS)

Wu, Ting-Hsiang; Gao, Lanyu; Chen, Yue; Wei, Kenneth; Chiou, Pei-Yu

2008-10-01

We report a high-speed microfluidic switch capable of achieving a switching time of 10 μs. The switching mechanism is realized by exciting dynamic vapor bubbles with focused laser pulses in a microfluidic polydimethylsiloxane (PDMS) channel. The bubble expansion deforms the elastic PDMS channel wall and squeezes the adjacent sample channel to control its fluid and particle flows as captured by the time-resolved imaging system. A switching of polystyrene microspheres in a Y-shaped channel has also been demonstrated. This ultrafast laser triggered switching mechanism has the potential to advance the sorting speed of state-of-the-art microscale fluorescence activated cell sorting devices.

Using a patterned grating structure to create lipid bilayer platforms insensitive to air bubbles.

PubMed

Han, Chung-Ta; Chao, Ling

2015-01-07

Supported lipid bilayers (SLBs) have been used for various biosensing applications. The bilayer structure enables embedded lipid membrane species to maintain their native orientation, and the two-dimensional fluidity is crucial for numerous biomolecular interactions to occur. The platform integrated with a microfluidic device for reagent transport and exchange has great potential to be applied with surface analytical tools. However, SLBs can easily be destroyed by air bubbles during assay reagent transport and exchange. Here, we created a patterned obstacle grating structured surface in a microfluidic channel to protect SLBs from being destroyed by air bubbles. Unlike all of the previous approaches using chemical modification or adding protection layers to strengthen lipid bilayers, the uniqueness of this approach is that it uses the patterned obstacles to physically trap water above the bilayers to prevent the air-water interface from directly coming into contact with and peeling the bilayers. We showed that our platform with certain grating geometry criteria can provide promising protection to SLBs from air bubbles. The required obstacle distance was found to decrease when we increased the air-bubble movement speed. In addition, the interaction assay results from streptavidin and biotinylated lipids in the confined SLBs suggested that receptors at the SLBs retained the interaction ability after air-bubble treatment. The results showed that the developed SLB platform can preserve both high membrane fluidity and high accessibility to the outside environment, which have never been simultaneously achieved before. Incorporating the built platforms with some surface analytical tools could open the bottleneck of building highly robust in vitro cell-membrane-related bioassays.

Better Organic Ternary Memory Performance through Self-Assembled Alkyltrichlorosilane Monolayers on Indium Tin Oxide (ITO) Surfaces.

PubMed

Hou, Xiang; Cheng, Xue-Feng; Zhou, Jin; He, Jing-Hui; Xu, Qing-Feng; Li, Hua; Li, Na-Jun; Chen, Dong-Yun; Lu, Jian-Mei

2017-11-16

Recently, surface engineering of the indium tin oxide (ITO) electrode of sandwich-like organic electric memory devices was found to effectively improve their memory performances. However, there are few methods to modify the ITO substrates. In this paper, we have successfully prepared alkyltrichlorosilane self-assembled monolayers (SAMs) on ITO substrates, and resistive random access memory devices are fabricated on these surfaces. Compared to the unmodified ITO substrates, organic molecules (i.e., 2-((4-butylphenyl)amino)-4-((4-butylphenyl)iminio)-3-oxocyclobut-1-en-1-olate, SA-Bu) grown on these SAM-modified ITO substrates have rougher surface morphologies but a smaller mosaicity. The organic layer on the SAM-modified ITO further aged to eliminate the crystalline phase diversity. In consequence, the ternary memory yields are effectively improved to approximately 40-47 %. Our results suggest that the insertion of alkyltrichlorosilane self-assembled monolayers could be an efficient method to improve the performance of organic memory devices. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

High-Performance Nonvolatile Organic Field-Effect Transistor Memory Based on Organic Semiconductor Heterostructures of Pentacene/P13/Pentacene as Both Charge Transport and Trapping Layers.

PubMed

Li, Wen; Guo, Fengning; Ling, Haifeng; Zhang, Peng; Yi, Mingdong; Wang, Laiyuan; Wu, Dequn; Xie, Linghai; Huang, Wei

2017-08-01

Nonvolatile organic field-effect transistor (OFET) memory devices based on pentacene/ N , N '-ditridecylperylene-3,4,9,10-tetracarboxylic diimide (P13)/pentacene trilayer organic heterostructures have been proposed. The discontinuous n-type P13 embedded in p-type pentacene layers can not only provide electrons in the semiconductor layer that facilitates electron trapping process; it also works as charge trapping sites, which is attributed to the quantum well-like pentacene/P13/pentacene organic heterostructures. The synergistic effects of charge trapping in the discontinuous P13 and the charge-trapping property of the poly(4-vinylphenol) (PVP) layer remarkably improve the memory performance. In addition, the trilayer organic heterostructures have also been successfully applied to multilevel and flexible nonvolatile memory devices. The results provide a novel design strategy to achieve high-performance nonvolatile OFET memory devices and allow potential applications for different combinations of various organic semiconductor materials in OFET memory.

High‐Performance Nonvolatile Organic Field‐Effect Transistor Memory Based on Organic Semiconductor Heterostructures of Pentacene/P13/Pentacene as Both Charge Transport and Trapping Layers

PubMed Central

Li, Wen; Guo, Fengning; Ling, Haifeng; Zhang, Peng; Wang, Laiyuan; Wu, Dequn

2017-01-01

Nonvolatile organic field‐effect transistor (OFET) memory devices based on pentacene/N,N′‐ditridecylperylene‐3,4,9,10‐tetracarboxylic diimide (P13)/pentacene trilayer organic heterostructures have been proposed. The discontinuous n‐type P13 embedded in p‐type pentacene layers can not only provide electrons in the semiconductor layer that facilitates electron trapping process; it also works as charge trapping sites, which is attributed to the quantum well‐like pentacene/P13/pentacene organic heterostructures. The synergistic effects of charge trapping in the discontinuous P13 and the charge‐trapping property of the poly(4‐vinylphenol) (PVP) layer remarkably improve the memory performance. In addition, the trilayer organic heterostructures have also been successfully applied to multilevel and flexible nonvolatile memory devices. The results provide a novel design strategy to achieve high‐performance nonvolatile OFET memory devices and allow potential applications for different combinations of various organic semiconductor materials in OFET memory. PMID:28852619

Feasibility study of molecular memory device based on DNA using methylation to store information

NASA Astrophysics Data System (ADS)

Jiang, Liming; Qiu, Wanzhi; Al-Dirini, Feras; Hossain, Faruque M.; Evans, Robin; Skafidas, Efstratios

2016-07-01

DNA, because of its robustness and dense information storage capability, has been proposed as a potential candidate for next-generation storage media. However, encoding information into the DNA sequence requires molecular synthesis technology, which to date is costly and prone to synthesis errors. Reading the DNA strand information is also complex. Ideally, DNA storage will provide methods for modifying stored information. Here, we conduct a feasibility study investigating the use of the DNA 5-methylcytosine (5mC) methylation state as a molecular memory to store information. We propose a new 1-bit memory device and study, based on the density functional theory and non-equilibrium Green's function method, the feasibility of electrically reading the information. Our results show that changes to methylation states lead to changes in the peak of negative differential resistance which can be used to interrogate memory state. Our work demonstrates a new memory concept based on methylation state which can be beneficial in the design of next generation DNA based molecular electronic memory devices.

A graphene integrated highly transparent resistive switching memory device

NASA Astrophysics Data System (ADS)

Dugu, Sita; Pavunny, Shojan P.; Limbu, Tej B.; Weiner, Brad R.; Morell, Gerardo; Katiyar, Ram S.

2018-05-01

We demonstrate the hybrid fabrication process of a graphene integrated highly transparent resistive random-access memory (TRRAM) device. The indium tin oxide (ITO)/Al2O3/graphene nonvolatile memory device possesses a high transmittance of >82% in the visible region (370-700 nm) and exhibits stable and non-symmetrical bipolar switching characteristics with considerably low set and reset voltages (<±1 V). The vertical two-terminal device shows an excellent resistive switching behavior with a high on-off ratio of ˜5 × 103. We also fabricated a ITO/Al2O3/Pt device and studied its switching characteristics for comparison and a better understanding of the ITO/Al2O3/graphene device characteristics. The conduction mechanisms in high and low resistance states were analyzed, and the observed polarity dependent resistive switching is explained based on electro-migration of oxygen ions.

Organic bistable memory devices based on MoO3 nanoparticle embedded Alq3 structures.

PubMed

Abhijith, T; Kumar, T V Arun; Reddy, V S

2017-03-03

Organic bistable memory devices were fabricated by embedding a thin layer of molybdenum trioxide (MoO 3 ) between two tris-(8-hydroxyquinoline)aluminum (Alq 3 ) layers. The device exhibited excellent switching characteristics with an ON/OFF current ratio of 1.15 × 10 3 at a read voltage of 1 V. The device showed repeatable write-erase capability and good stability in both the conductance states. These conductance states are non-volatile in nature and can be obtained by applying appropriate voltage pulses. The effect of MoO 3 layer thickness and its location in the Alq 3 matrix on characteristics of the memory device was investigated. The field emission scanning electron microscopy (FE-SEM) images of the MoO 3 layer revealed the presence of isolated nanoparticles. Based on the experimental results, a mechanism has been proposed for explaining the conductance switching of fabricated devices.

Photoisomerization-induced manipulation of single-electron tunneling for novel Si-based optical memory.

PubMed

Hayakawa, Ryoma; Higashiguchi, Kenji; Matsuda, Kenji; Chikyow, Toyohiro; Wakayama, Yutaka

2013-11-13

We demonstrated optical manipulation of single-electron tunneling (SET) by photoisomerization of diarylethene molecules in a metal-insulator-semiconductor (MIS) structure. Stress is placed on the fact that device operation is realized in the practical device configuration of MIS structure and that it is not achieved in structures based on nanogap electrodes and scanning probe techniques. Namely, this is a basic memory device configuration that has the potential for large-scale integration. In our device, the threshold voltage of SET was clearly modulated as a reversible change in the molecular orbital induced by photoisomerization, indicating that diarylethene molecules worked as optically controllable quantum dots. These findings will allow the integration of photonic functionality into current Si-based memory devices, which is a unique feature of organic molecules that is unobtainable with inorganic materials. Our proposed device therefore has enormous potential for providing a breakthrough in Si technology.

Organic bistable memory devices based on MoO3 nanoparticle embedded Alq3 structures

NASA Astrophysics Data System (ADS)

Abhijith, T.; Kumar, T. V. Arun; Reddy, V. S.

2017-03-01

Organic bistable memory devices were fabricated by embedding a thin layer of molybdenum trioxide (MoO3) between two tris-(8-hydroxyquinoline)aluminum (Alq3) layers. The device exhibited excellent switching characteristics with an ON/OFF current ratio of 1.15 × 103 at a read voltage of 1 V. The device showed repeatable write-erase capability and good stability in both the conductance states. These conductance states are non-volatile in nature and can be obtained by applying appropriate voltage pulses. The effect of MoO3 layer thickness and its location in the Alq3 matrix on characteristics of the memory device was investigated. The field emission scanning electron microscopy (FE-SEM) images of the MoO3 layer revealed the presence of isolated nanoparticles. Based on the experimental results, a mechanism has been proposed for explaining the conductance switching of fabricated devices.

A multilevel nonvolatile magnetoelectric memory

NASA Astrophysics Data System (ADS)

Shen, Jianxin; Cong, Junzhuang; Shang, Dashan; Chai, Yisheng; Shen, Shipeng; Zhai, Kun; Sun, Young

2016-09-01

The coexistence and coupling between magnetization and electric polarization in multiferroic materials provide extra degrees of freedom for creating next-generation memory devices. A variety of concepts of multiferroic or magnetoelectric memories have been proposed and explored in the past decade. Here we propose a new principle to realize a multilevel nonvolatile memory based on the multiple states of the magnetoelectric coefficient (α) of multiferroics. Because the states of α depends on the relative orientation between magnetization and polarization, one can reach different levels of α by controlling the ratio of up and down ferroelectric domains with external electric fields. Our experiments in a device made of the PMN-PT/Terfenol-D multiferroic heterostructure confirm that the states of α can be well controlled between positive and negative by applying selective electric fields. Consequently, two-level, four-level, and eight-level nonvolatile memory devices are demonstrated at room temperature. This kind of multilevel magnetoelectric memory retains all the advantages of ferroelectric random access memory but overcomes the drawback of destructive reading of polarization. In contrast, the reading of α is nondestructive and highly efficient in a parallel way, with an independent reading coil shared by all the memory cells.

Post polymerization cure shape memory polymers

DOEpatents

Wilson, Thomas S.; Hearon, II, Michael Keith; Bearinger, Jane P.

2017-01-10

This invention relates to chemical polymer compositions, methods of synthesis, and fabrication methods for devices regarding polymers capable of displaying shape memory behavior (SMPs) and which can first be polymerized to a linear or branched polymeric structure, having thermoplastic properties, subsequently processed into a device through processes typical of polymer melts, solutions, and dispersions and then crossed linked to a shape memory thermoset polymer retaining the processed shape.

Post polymerization cure shape memory polymers

DOEpatents

Wilson, Thomas S; Hearon, Michael Keith; Bearinger, Jane P

2014-11-11

This invention relates to chemical polymer compositions, methods of synthesis, and fabrication methods for devices regarding polymers capable of displaying shape memory behavior (SMPs) and which can first be polymerized to a linear or branched polymeric structure, having thermoplastic properties, subsequently processed into a device through processes typical of polymer melts, solutions, and dispersions and then crossed linked to a shape memory thermoset polymer retaining the processed shape.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lee, Juhee; Lee, Sungpyo; Lee, Moo Hyung

Quasi-unipolar non-volatile organic transistor memory (NOTM) can combine the best characteristics of conventional unipolar and ambipolar NOTMs and, as a result, exhibit improved device performance. Unipolar NOTMs typically exhibit a large signal ratio between the programmed and erased current signals but also require a large voltage to program and erase the memory cells. Meanwhile, an ambipolar NOTM can be programmed and erased at lower voltages, but the resulting signal ratio is small. By embedding a discontinuous n-type fullerene layer within a p-type pentacene film, quasi-unipolar NOTMs are fabricated, of which the signal storage utilizes both electrons and holes while themore » electrical signal relies on only hole conduction. These devices exhibit superior memory performance relative to both pristine unipolar pentacene devices and ambipolar fullerene/pentacene bilayer devices. The quasi-unipolar NOTM exhibited a larger signal ratio between the programmed and erased states while also reducing the voltage required to program and erase a memory cell. This simple approach should be readily applicable for various combinations of advanced organic semiconductors that have been recently developed and thereby should make a significant impact on organic memory research.« less

Organic transistor memory with a charge storage molecular double-floating-gate monolayer.

PubMed

Tseng, Chiao-Wei; Huang, Ding-Chi; Tao, Yu-Tai

2015-05-13

A flexible, low-voltage, and nonvolatile memory device was fabricated by implanting a functional monolayer on an aluminum oxide dielectric surface in a pentacene-based organic transistor. The monolayer-forming molecule contains a phosphonic acid group as the anchoring moiety and a charge-trapping core group flanked between two alkyl chain spacers as the charge trapping site. The memory characteristics strongly depend on the monolayer used due to the localized charge-trapping capability for different core groups, including the diacetylenic (DA) unit as the hole carrier trap, the naphthalenetetracarboxyldiimide (ND) unit as the electron carrier trap, and the one with both DA and ND units present, respectively. The device with the monolayer carrying both DA and ND groups has a larger memory window than that for the one containing DA only and a longer retention time than that for the one containing DA or ND only, giving a memory window of 1.4 V and a retention time around 10(9) s. This device with hybrid organic monolayer/inorganic dielectrics also exhibited rather stable device characteristics upon bending of the polymeric substrate.

High Performance of N-Doped Graphene with Bubble-like Textures for Supercapacitors.

PubMed

Zhang, Shuo; Sui, Lina; Kang, Hongquan; Dong, Hongzhou; Dong, Lifeng; Yu, Liyan

2018-02-01

Nitrogen-doped graphene (NG) with wrinkled and bubble-like texture is fabricated by a thermal treatment. Especially, a novel sonication-assisted pretreatment with nitric acid is used to further oxidize graphene oxide and its binding with melamine molecules. There are many bubble-like nanoflakes with a dimension of about 10 nm appeared on the undulated graphene nanosheets. The bubble-like texture provides more active sites for effective ion transport and reversible capacitive behavior. The specific surface area of NG (5.03 at% N) can reach up to 438.7 m 2 g -1 , and the NG electrode demonstrates high specific capacitance (481 F g -1 at 1 A g -1 , four times higher than reduced graphene oxide electrode (127.5 F g -1 )), superior cycle stability (the capacitance retention of 98.9% in 2 m KOH and 99.2% in 1 m H 2 SO 4 after 8000 cycles), and excellent energy density (42.8 Wh kg -1 at power density of 500 W kg -1 in 2 m KOH aqueous electrolyte). The results indicate the potential use of NG as graphene-based electrode material for energy storage devices. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Microspectroscopic imaging of solution plasma: How do its physical properties and chemical species evolve in atmospheric-pressure water vapor bubbles?

NASA Astrophysics Data System (ADS)

Yui, Hiroharu; Banno, Motohiro

2018-01-01

In this article, we review the development of scientific instruments for obtaining information on the evolution of physical properties and chemical species of solution plasma (SP). When a pulsed high voltage is applied between electrodes immersed in an aqueous solution, SP is formed in water vapor bubbles transiently generated in the solution under atmospheric pressure. To clarify how SP emerges in water vapor bubbles and is sustained in solutions, an instrument with micrometer spatial resolution and nanosecond temporal resolution is required. To meet these requirements, a microscopic system with a custom-made optical discharge cell was newly developed, where the working distance between the SP and the microscopic objective lens was minimized. A hollow electrode equipped in the discharge cell also enabled us to control the chemical composition in water vapor bubbles. To study the spatial and temporal evolutions of chemical species in micrometer and nano- to microsecond regions, a streak camera with a spectrometer and a CCD detector with a time-gated electronic device were combined with the microscope system. The developed instrument is expected to contribute to providing a new means of developing new schemes for chemical reactions and material syntheses.

Understanding the use of continuous oscillating positive airway pressure (bubble CPAP) to treat neonatal respiratory disease: an engineering approach.

PubMed

Manilal-Reddy, P I; Al-Jumaily, A M

2009-01-01

A continuous oscillatory positive airway pressure with pressure oscillations incidental to the mean airway pressure (bubble CPAP) is defined as a modified form of traditional continuous positive airway pressure (CPAP) delivery where pressure oscillations in addition to CPAP are administered to neonates with lung diseases. The mechanical effect of the pressure oscillations on lung performance is investigated by formulating mathematical models of a typical bubble CPAP device and a simple representation of a neonatal respiratory system. Preliminary results of the respiratory system's mechanical response suggest that bubble CPAP may improve lung performance by minimizing the respiratory system impedance and that the resonant frequency of the respiratory system may be a controlling factor. Additional steps in terms of clinical trials and a more complex respiratory system model are required to gain a deeper insight into the mechanical receptiveness of the respiratory system to pressure oscillations. However, the current results are promising in that they offer a deeper insight into the trends of variations that can be expected in future extended models as well as the model philosophies that need to be adopted to produce results that are compatible with experimental verification.

Size-selective sorting in bubble streaming flows: Particle migration on fast time scales

NASA Astrophysics Data System (ADS)

Thameem, Raqeeb; Rallabandi, Bhargav; Hilgenfeldt, Sascha

2015-11-01

Steady streaming from ultrasonically driven microbubbles is an increasingly popular technique in microfluidics because such devices are easily manufactured and generate powerful and highly controllable flows. Combining streaming and Poiseuille transport flows allows for passive size-sensitive sorting at particle sizes and selectivities much smaller than the bubble radius. The crucial particle deflection and separation takes place over very small times (milliseconds) and length scales (20-30 microns) and can be rationalized using a simplified geometric mechanism. A quantitative theoretical description is achieved through the application of recent results on three-dimensional streaming flow field contributions. To develop a more fundamental understanding of the particle dynamics, we use high-speed photography of trajectories in polydisperse particle suspensions, recording the particle motion on the time scale of the bubble oscillation. Our data reveal the dependence of particle displacement on driving phase, particle size, oscillatory flow speed, and streaming speed. With this information, the effective repulsive force exerted by the bubble on the particle can be quantified, showing for the first time how fast, selective particle migration is effected in a streaming flow. We acknowledge support by the National Science Foundation under grant number CBET-1236141.

The gating effect by thousands of bubble-propelled micromotors in macroscale channels

NASA Astrophysics Data System (ADS)

Teo, Wei Zhe; Wang, Hong; Pumera, Martin

2015-07-01

Increasing interest in the utilization of self-propelled micro-/nanomotors for environmental remediation requires the examination of their efficiency at the macroscale level. As such, we investigated the effect of micro-/nanomotors' propulsion and bubbling on the rate of sodium hydroxide dissolution and the subsequent dispersion of OH- ions across more than 30 cm, so as to understand how these factors might affect the dispersion of remediation agents in real systems which might require these agents to travel long distances to reach the pollutants. Experimental results showed that the presence of large numbers of active bubble-propelled tubular bimetallic Cu/Pt micromotors (4.5 × 104) induced a gating effect on the dissolution and dispersion process, slowing down the change in pH of the solution considerably. The retardation was found to be dependent on the number of active micromotors present in the range of 1.5 × 104 to 4.5 × 104 micromotors. At lower numbers (0.75 × 104), however, propelling micromotors did speed up the dissolution and dispersion process. The understanding of the combined effects of large number of micro-/nanomotors' motion and bubbling on its macroscale mixing behavior is of significant importance for future applications of these devices.

Nanoscale superconducting memory based on the kinetic inductance of asymmetric nanowire loops

NASA Astrophysics Data System (ADS)

Murphy, Andrew; Averin, Dmitri V.; Bezryadin, Alexey

2017-06-01

The demand for low-dissipation nanoscale memory devices is as strong as ever. As Moore’s law is staggering, and the demand for a low-power-consuming supercomputer is high, the goal of making information processing circuits out of superconductors is one of the central goals of modern technology and physics. So far, digital superconducting circuits could not demonstrate their immense potential. One important reason for this is that a dense superconducting memory technology is not yet available. Miniaturization of traditional superconducting quantum interference devices is difficult below a few micrometers because their operation relies on the geometric inductance of the superconducting loop. Magnetic memories do allow nanometer-scale miniaturization, but they are not purely superconducting (Baek et al 2014 Nat. Commun. 5 3888). Our approach is to make nanometer scale memory cells based on the kinetic inductance (and not geometric inductance) of superconducting nanowire loops, which have already shown many fascinating properties (Aprili 2006 Nat. Nanotechnol. 1 15; Hopkins et al 2005 Science 308 1762). This allows much smaller devices and naturally eliminates magnetic-field cross-talk. We demonstrate that the vorticity, i.e., the winding number of the order parameter, of a closed superconducting loop can be used for realizing a nanoscale nonvolatile memory device. We demonstrate how to alter the vorticity in a controlled fashion by applying calibrated current pulses. A reliable read-out of the memory is also demonstrated. We present arguments that such memory can be developed to operate without energy dissipation.

Epitaxial Garnets and Hexagonal Ferrites.

DTIC Science & Technology

1983-12-01

operating at frequencies between 1 GHz and 25 GHz. 2. Investigate LPE growth of lithium ferrite with the objective of preparing low-loss, large area films ...and hexagonal ferrites when the series of contracts began in 1975. At that time the liquid phase epitaxy method for growth of magnetic garnet films ...principal interest in epitaxial garnets was for magnetic bubble memories. For this Uapplication the films had to be about 3pm thick with low defect density

Adaptation of Magnetic Bubble Memory in a Standard Microcomputer Environment.

DTIC Science & Technology

1981-12-01

UNCLASSIFIED 60WNvCLASVICY,@,U OV Two$ 06SCV%’ Req. 80"e. (continuation of abstract) 9both the civilian and military computing environments due to the...degree of MASTER OF SCIENCE IN COMPUTER SCIENCE from the NAVAL POSTGRADUATE SCHOOL December 1981 Authors: ,4i Approved by...vital and unigue role in both the civilian and military computing environments due to the combination of characteristics exhibited by magnetic domain

Micro-foundation using percolation theory of the finite time singular behavior of the crash hazard rate in a class of rational expectation bubbles

NASA Astrophysics Data System (ADS)

Seyrich, Maximilian; Sornette, Didier

2016-04-01

We present a plausible micro-founded model for the previously postulated power law finite time singular form of the crash hazard rate in the Johansen-Ledoit-Sornette (JLS) model of rational expectation bubbles. The model is based on a percolation picture of the network of traders and the concept that clusters of connected traders share the same opinion. The key ingredient is the notion that a shift of position from buyer to seller of a sufficiently large group of traders can trigger a crash. This provides a formula to estimate the crash hazard rate by summation over percolation clusters above a minimum size of a power sa (with a>1) of the cluster sizes s, similarly to a generalized percolation susceptibility. The power sa of cluster sizes emerges from the super-linear dependence of group activity as a function of group size, previously documented in the literature. The crash hazard rate exhibits explosive finite time singular behaviors when the control parameter (fraction of occupied sites, or density of traders in the network) approaches the percolation threshold pc. Realistic dynamics are generated by modeling the density of traders on the percolation network by an Ornstein-Uhlenbeck process, whose memory controls the spontaneous excursion of the control parameter close to the critical region of bubble formation. Our numerical simulations recover the main stylized properties of the JLS model with intermittent explosive super-exponential bubbles interrupted by crashes.

Memory characteristics of metal-oxide-semiconductor structures based on Ge nanoclusters-embedded GeO(x) films grown at low temperature.

PubMed

Lin, Tzu-Shun; Lou, Li-Ren; Lee, Ching-Ting; Tsai, Tai-Cheng

2012-03-01

The memory devices constructed from the Ge-nanoclusters embedded GeO(x) layer deposited by the laser-assisted chemical vapor deposition (LACVD) system were fabricated. The Ge nanoclusters were observed by a high-resolution transmission electron microscopy. Using the capacitance versus voltage (C-V) and the conductance versus voltage (G-V) characteristics measured under various frequencies, the memory effect observed in the C-V curves was dominantly attributed to the charge storage in the Ge nanoclusters. Furthermore, the defects existed in the deposited film and the interface states were insignificant to the memory performances. Capacitance versus time (C-t) measurement was also executed to evaluate the charge retention characteristics. The charge storage and retention behaviors of the devices demonstrated that the Ge nanoclusters grown by the LACVD system at low temperature are promising for memory device applications.

Solution-processed Al-chelated gelatin for highly transparent non-volatile memory applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chang, Yu-Chi; Wang, Yeong-Her, E-mail: yhw@ee.ncku.edu.tw

2015-03-23

Using the biomaterial of Al-chelated gelatin (ACG) prepared by sol-gel method in the ITO/ACG/ITO structure, a highly transparent resistive random access memory (RRAM) was obtained. The transmittance of the fabricated device is approximately 83% at 550 nm while that of Al/gelatin/ITO is opaque. As to the ITO/gelatin/ITO RRAM, no resistive switching behavior can be seen. The ITO/ACG/ITO RRAM shows high ON/OFF current ratio (>10{sup 5}), low operation voltage, good uniformity, and retention characteristics at room temperature and 85 °C. The mechanism of the ACG-based memory devices is presented. The enhancement of these electrical properties can be attributed to the chelate effect ofmore » Al ions with gelatin. Results show that transparent ACG-based memory devices possess the potential for next-generation resistive memories and bio-electronic applications.« less

Light programmable organic transistor memory device based on hybrid dielectric

NASA Astrophysics Data System (ADS)

Ren, Xiaochen; Chan, Paddy K. L.

2013-09-01

We have fabricated the transistor memory devices based on SiO2 and polystyrene (PS) hybrid dielectric. The trap states densities with different semiconductors have been investigated and a maximum 160V memory window between programming and erasing is realized. For DNTT based transistor, the trapped electron density is limited by the number of mobile electrons in semiconductor. The charge transport mechanism is verified by light induced Vth shift effect. Furthermore, in order to meet the low operating power requirement of portable electronic devices, we fabricated the organic memory transistor based on AlOx/self-assembly monolayer (SAM)/PS hybrid dielectric, the effective capacitance of hybrid dielectric is 210 nF cm-2 and the transistor can reach saturation state at -3V gate bias. The memory window in transfer I-V curve is around 1V under +/-5V programming and erasing bias.

Multi-floor cascading ferroelectric nanostructures: multiple data writing-based multi-level non-volatile memory devices.

PubMed

Hyun, Seung; Kwon, Owoong; Lee, Bom-Yi; Seol, Daehee; Park, Beomjin; Lee, Jae Yong; Lee, Ju Hyun; Kim, Yunseok; Kim, Jin Kon

2016-01-21

Multiple data writing-based multi-level non-volatile memory has gained strong attention for next-generation memory devices to quickly accommodate an extremely large number of data bits because it is capable of storing multiple data bits in a single memory cell at once. However, all previously reported devices have failed to store a large number of data bits due to the macroscale cell size and have not allowed fast access to the stored data due to slow single data writing. Here, we introduce a novel three-dimensional multi-floor cascading polymeric ferroelectric nanostructure, successfully operating as an individual cell. In one cell, each floor has its own piezoresponse and the piezoresponse of one floor can be modulated by the bias voltage applied to the other floor, which means simultaneously written data bits in both floors can be identified. This could achieve multi-level memory through a multiple data writing process.

Josephson Thermal Memory

NASA Astrophysics Data System (ADS)

Guarcello, Claudio; Solinas, Paolo; Braggio, Alessandro; Di Ventra, Massimiliano; Giazotto, Francesco

2018-01-01

We propose a superconducting thermal memory device that exploits the thermal hysteresis in a flux-controlled temperature-biased superconducting quantum-interference device (SQUID). This system reveals a flux-controllable temperature bistability, which can be used to define two well-distinguishable thermal logic states. We discuss a suitable writing-reading procedure for these memory states. The time of the memory writing operation is expected to be on the order of approximately 0.2 ns for a Nb-based SQUID in thermal contact with a phonon bath at 4.2 K. We suggest a noninvasive readout scheme for the memory states based on the measurement of the effective resonance frequency of a tank circuit inductively coupled to the SQUID. The proposed device paves the way for a practical implementation of thermal logic and computation. The advantage of this proposal is that it represents also an example of harvesting thermal energy in superconducting circuits.

Field enhanced charge carrier reconfiguration in electronic and ionic coupled dynamic polymer resistive memory.

PubMed

Zhao, Jun Hui; Thomson, Douglas J; Pilapil, Matt; Pillai, Rajesh G; Rahman, G M Aminur; Freund, Michael S

2010-04-02

Dynamic resistive memory devices based on a conjugated polymer composite (PPy(0)DBS(-)Li(+) (PPy: polypyrrole; DBS(-): dodecylbenzenesulfonate)), with field-driven ion migration, have been demonstrated. In this work the dynamics of these systems has been investigated and it has been concluded that increasing the applied field can dramatically increase the rate at which information can be 'written' into these devices. A conductance model using space charge limited current coupled with an electric field induced ion reconfiguration has been successfully utilized to interpret the experimentally observed transient conducting behaviors. The memory devices use the rising and falling transient current states for the storage of digital states. The magnitude of these transient currents is controlled by the magnitude and width of the write/read pulse. For the 500 nm length devices used in this work an increase in 'write' potential from 2.5 to 5.5 V decreased the time required to create a transient conductance state that can be converted into the digital signal by 50 times. This work suggests that the scaling of these devices will be favorable and that 'write' times for the conjugated polymer composite memory devices will decrease rapidly as ion driving fields increase with decreasing device size.

Multi-floor cascading ferroelectric nanostructures: multiple data writing-based multi-level non-volatile memory devices

NASA Astrophysics Data System (ADS)

Hyun, Seung; Kwon, Owoong; Lee, Bom-Yi; Seol, Daehee; Park, Beomjin; Lee, Jae Yong; Lee, Ju Hyun; Kim, Yunseok; Kim, Jin Kon

2016-01-01

Multiple data writing-based multi-level non-volatile memory has gained strong attention for next-generation memory devices to quickly accommodate an extremely large number of data bits because it is capable of storing multiple data bits in a single memory cell at once. However, all previously reported devices have failed to store a large number of data bits due to the macroscale cell size and have not allowed fast access to the stored data due to slow single data writing. Here, we introduce a novel three-dimensional multi-floor cascading polymeric ferroelectric nanostructure, successfully operating as an individual cell. In one cell, each floor has its own piezoresponse and the piezoresponse of one floor can be modulated by the bias voltage applied to the other floor, which means simultaneously written data bits in both floors can be identified. This could achieve multi-level memory through a multiple data writing process.Multiple data writing-based multi-level non-volatile memory has gained strong attention for next-generation memory devices to quickly accommodate an extremely large number of data bits because it is capable of storing multiple data bits in a single memory cell at once. However, all previously reported devices have failed to store a large number of data bits due to the macroscale cell size and have not allowed fast access to the stored data due to slow single data writing. Here, we introduce a novel three-dimensional multi-floor cascading polymeric ferroelectric nanostructure, successfully operating as an individual cell. In one cell, each floor has its own piezoresponse and the piezoresponse of one floor can be modulated by the bias voltage applied to the other floor, which means simultaneously written data bits in both floors can be identified. This could achieve multi-level memory through a multiple data writing process. Electronic supplementary information (ESI) available. See DOI: 10.1039/c5nr07377d

A Program of Research on Microfabrication Techniques for VLSI Magnetic Devices.

DTIC Science & Technology

1981-10-01

micrometer bubble diameter materials so that we can evaluate them as device materials. A detailed report on the LPE growth of garnet films at CMU is included...Figure 2: Growth Rate versus Growth Temperature Growth Rate The growth rate of the LPE film is determined by the concentration of garnet in the melt, the...selectively modifying, and characterizing single Lcrystal epitaxial garnet hnd amorphous magnetic thin films are being investi- *_ gated with the

Containing Hair During Cutting In Zero Gravity

NASA Technical Reports Server (NTRS)

Haines, Richard F.

1992-01-01

Proposed device collects loose hair during barbering and shaving in zero gravity to prevent hair clippings from contaminating cabin of spacecraft. Folds for storage, opens into clear, bubblelike plastic dome surrounding user's head, tray fits around user's throat, and fanlike ring surrounds back of neck. Device fits snugly but comfortably around neck, preventing hair from escaping to outside. Flow of air into hose connected to suction pump removes hair from bubble as cut. Filter at end of hose collects hair.

Millstone Hill Radar Satellite Tracking System

DTIC Science & Technology

1981-11-04

tilt" is through two commmercially available electronic level sensors (Brunson model 455-1). These devices use the position of an air bubble in a...spikes. The first device, the "principal" tiltmeter , is aligned along the projection of the boresight axis onto the azimuth plane. The other, the...34orthogonal" tiltmeter , is mounted Lt a right angle to the first. The output level range of the tiltmeters is plus/minus 5 VDC. By convention, any tower

Real-time on-line ultrasonic monitoring for bubbles in ceramic 'slip' in pottery pipelines.

PubMed

Yim, Geun Tae; Leighton, Timothy G

2010-01-01

When casting ceramic items in potteries, liquid 'slip' is passed from a settling tank, through overhead pipelines, before being pumped manually into the moulds. It is not uncommon for bubbles to be introduced into the slip as it passes through the complex piping network, and indeed the presence of bubbles is a major source of financial loss to the ceramics industry worldwide. This is because the bubbles almost always remain undetected until after the ceramic items have been fired in a kiln, during which process bubbles expand and create unwanted holes in the pottery. Since there it is usually an interval of several hours between the injection of the slip into the moulds, and the inspection of the items after firing, such bubble generation goes undetected on the production line during the manufacture of hundreds or even thousands of ceramic units. Not only does this mean hours of wasted staff time, power consumption and production line time: the raw material which makes up these faulty items cannot even be recycled, as fired ceramic cannot be converted back into slip. Currently, the state-of-the-art method for detecting bubbles in the opaque ceramic slip is slow and invasive, can only be used off-line, and requires expertise which is rarely available. This paper describes the invention, engineering and in-factory testing across Europe of an ultrasonic system for real-time monitoring for the presence of bubbles in casting slip. It interprets changes in the scattering statistics accompanying the presence of the bubbles, the latter being detected through perturbations in the received signal when a narrow-band ultrasonic probing wave is transmitted through the slip. The device can be bolted onto the outside of the pipeline, or used in-line. It is automated, and requires no special expertise. The acoustic problems which had to be solved were severe, and included making the system capable of monitoring the slip regardless of the material of pipe (plastic, steel, etc.) and nature of the slip (which can be very variable). It must also be capable of detecting bubbles amongst the myriad solid particles and other species present in the flowing slip. The completed prototype was tested around several factories in Europe, and proved not only to be more versatile, but also more sensitive, than the state-of-the-art method.

Transparent and flexible resistive switching memory devices with a very high ON/OFF ratio using gold nanoparticles embedded in a silk protein matrix

NASA Astrophysics Data System (ADS)

Gogurla, Narendar; Mondal, Suvra P.; Sinha, Arun K.; Katiyar, Ajit K.; Banerjee, Writam; Kundu, Subhas C.; Ray, Samit K.

2013-08-01

The growing demand for biomaterials for electrical and optical devices is motivated by the need to make building blocks for the next generation of printable bio-electronic devices. In this study, transparent and flexible resistive memory devices with a very high ON/OFF ratio incorporating gold nanoparticles into the Bombyx mori silk protein fibroin biopolymer are demonstrated. The novel electronic memory effect is based on filamentary switching, which leads to the occurrence of bistable states with an ON/OFF ratio larger than six orders of magnitude. The mechanism of this process is attributed to the formation of conductive filaments through silk fibroin and gold nanoparticles in the nanocomposite. The proposed hybrid bio-inorganic devices show promise for use in future flexible and transparent nanoelectronic systems.

Compact modeling of CRS devices based on ECM cells for memory, logic and neuromorphic applications.

PubMed

Linn, E; Menzel, S; Ferch, S; Waser, R

2013-09-27

Dynamic physics-based models of resistive switching devices are of great interest for the realization of complex circuits required for memory, logic and neuromorphic applications. Here, we apply such a model of an electrochemical metallization (ECM) cell to complementary resistive switches (CRSs), which are favorable devices to realize ultra-dense passive crossbar arrays. Since a CRS consists of two resistive switching devices, it is straightforward to apply the dynamic ECM model for CRS simulation with MATLAB and SPICE, enabling study of the device behavior in terms of sweep rate and series resistance variations. Furthermore, typical memory access operations as well as basic implication logic operations can be analyzed, revealing requirements for proper spike and level read operations. This basic understanding facilitates applications of massively parallel computing paradigms required for neuromorphic applications.

A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5-x/TaO2-x bilayer structures

NASA Astrophysics Data System (ADS)

Lee, Myoung-Jae; Lee, Chang Bum; Lee, Dongsoo; Lee, Seung Ryul; Chang, Man; Hur, Ji Hyun; Kim, Young-Bae; Kim, Chang-Jung; Seo, David H.; Seo, Sunae; Chung, U.-In; Yoo, In-Kyeong; Kim, Kinam

2011-08-01

Numerous candidates attempting to replace Si-based flash memory have failed for a variety of reasons over the years. Oxide-based resistance memory and the related memristor have succeeded in surpassing the specifications for a number of device requirements. However, a material or device structure that satisfies high-density, switching-speed, endurance, retention and most importantly power-consumption criteria has yet to be announced. In this work we demonstrate a TaOx-based asymmetric passive switching device with which we were able to localize resistance switching and satisfy all aforementioned requirements. In particular, the reduction of switching current drastically reduces power consumption and results in extreme cycling endurances of over 1012. Along with the 10 ns switching times, this allows for possible applications to the working-memory space as well. Furthermore, by combining two such devices each with an intrinsic Schottky barrier we eliminate any need for a discrete transistor or diode in solving issues of stray leakage current paths in high-density crossbar arrays.

Role of nanorods insertion layer in ZnO-based electrochemical metallization memory cell

NASA Astrophysics Data System (ADS)

Mangasa Simanjuntak, Firman; Singh, Pragya; Chandrasekaran, Sridhar; Juanda Lumbantoruan, Franky; Yang, Chih-Chieh; Huang, Chu-Jie; Lin, Chun-Chieh; Tseng, Tseung-Yuen

2017-12-01

An engineering nanorod array in a ZnO-based electrochemical metallization device for nonvolatile memory applications was investigated. A hydrothermally synthesized nanorod layer was inserted into a Cu/ZnO/ITO device structure. Another device was fabricated without nanorods for comparison, and this device demonstrated a diode-like behavior with no switching behavior at a low current compliance (CC). The switching became clear only when the CC was increased to 75 mA. The insertion of a nanorods layer induced switching characteristics at a low operation current and improve the endurance and retention performances. The morphology of the nanorods may control the switching characteristics. A forming-free electrochemical metallization memory device having long switching cycles (>104 cycles) with a sufficient memory window (103 times) for data storage application, good switching stability and sufficient retention was successfully fabricated by adjusting the morphology and defect concentration of the inserted nanorod layer. The nanorod layer not only contributed to inducing resistive switching characteristics but also acted as both a switching layer and a cation diffusion control layer.

Photodrive of magnetic bubbles via magnetoelastic waves

PubMed Central

Ogawa, Naoki; Koshibae, Wataru; Beekman, Aron Jonathan; Nagaosa, Naoto; Kubota, Masashi; Kawasaki, Masashi; Tokura, Yoshinori

2015-01-01

Precise control of magnetic domain walls continues to be a central topic in the field of spintronics to boost infotech, logic, and memory applications. One way is to drive the domain wall by current in metals. In insulators, the incoherent flow of phonons and magnons induced by the temperature gradient can carry the spins, i.e., spin Seebeck effect, but the spatial and time dependence is difficult to control. Here, we report that coherent phonons hybridized with spin waves, magnetoelastic waves, can drive magnetic bubble domains, or curved domain walls, in an iron garnet, which are excited by ultrafast laser pulses at a nonabsorbing photon energy. These magnetoelastic waves were imaged by time-resolved Faraday microscopy, and the resultant spin transfer force was evaluated to be larger for domain walls with steeper curvature. This will pave a path for the rapid spatiotemporal control of magnetic textures in insulating magnets. PMID:26150487

Photodrive of magnetic bubbles via magnetoelastic waves.

PubMed

Ogawa, Naoki; Koshibae, Wataru; Beekman, Aron Jonathan; Nagaosa, Naoto; Kubota, Masashi; Kawasaki, Masashi; Tokura, Yoshinori

2015-07-21

Precise control of magnetic domain walls continues to be a central topic in the field of spintronics to boost infotech, logic, and memory applications. One way is to drive the domain wall by current in metals. In insulators, the incoherent flow of phonons and magnons induced by the temperature gradient can carry the spins, i.e., spin Seebeck effect, but the spatial and time dependence is difficult to control. Here, we report that coherent phonons hybridized with spin waves, magnetoelastic waves, can drive magnetic bubble domains, or curved domain walls, in an iron garnet, which are excited by ultrafast laser pulses at a nonabsorbing photon energy. These magnetoelastic waves were imaged by time-resolved Faraday microscopy, and the resultant spin transfer force was evaluated to be larger for domain walls with steeper curvature. This will pave a path for the rapid spatiotemporal control of magnetic textures in insulating magnets.

Nanoscale content-addressable memory

NASA Technical Reports Server (NTRS)

Davis, Bryan (Inventor); Principe, Jose C. (Inventor); Fortes, Jose (Inventor)

2009-01-01

A combined content addressable memory device and memory interface is provided. The combined device and interface includes one or more one molecular wire crossbar memories having spaced-apart key nanowires, spaced-apart value nanowires adjacent to the key nanowires, and configurable switches between the key nanowires and the value nanowires. The combination further includes a key microwire-nanowire grid (key MNG) electrically connected to the spaced-apart key nanowires, and a value microwire-nanowire grid (value MNG) electrically connected to the spaced-apart value nanowires. A key or value MNGs selects multiple nanowires for a given key or value.

Scalable printed electronics: an organic decoder addressing ferroelectric non-volatile memory.

PubMed

Ng, Tse Nga; Schwartz, David E; Lavery, Leah L; Whiting, Gregory L; Russo, Beverly; Krusor, Brent; Veres, Janos; Bröms, Per; Herlogsson, Lars; Alam, Naveed; Hagel, Olle; Nilsson, Jakob; Karlsson, Christer

2012-01-01

Scalable circuits of organic logic and memory are realized using all-additive printing processes. A 3-bit organic complementary decoder is fabricated and used to read and write non-volatile, rewritable ferroelectric memory. The decoder-memory array is patterned by inkjet and gravure printing on flexible plastics. Simulation models for the organic transistors are developed, enabling circuit designs tolerant of the variations in printed devices. We explain the key design rules in fabrication of complex printed circuits and elucidate the performance requirements of materials and devices for reliable organic digital logic.

Bad data packet capture device

DOEpatents

Chen, Dong; Gara, Alan; Heidelberger, Philip; Vranas, Pavlos

2010-04-20

An apparatus and method for capturing data packets for analysis on a network computing system includes a sending node and a receiving node connected by a bi-directional communication link. The sending node sends a data transmission to the receiving node on the bi-directional communication link, and the receiving node receives the data transmission and verifies the data transmission to determine valid data and invalid data and verify retransmissions of invalid data as corresponding valid data. A memory device communicates with the receiving node for storing the invalid data and the corresponding valid data. A computing node communicates with the memory device and receives and performs an analysis of the invalid data and the corresponding valid data received from the memory device.

Analysis of a digital RF memory in a signal-delay application

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jelinek, D.A.

1992-03-01

Laboratory simulation of the approach of a radar fuze towards a target is an important factor in our ability to accurately measure the radar's performance. This simulation is achieved, in part, by dynamically delaying and attenuating the radar's transmitted pulse and sending the result back to the radar's receiver. Historically, the device used to perform the dynamic delay has been a limiting factor in the evaluation of a radar's performance and characteristics. A new device has been proposed that appears to have more capability than previous dynamic delay devices. This device is the digital RF memory. This report presents themore » results of an analysis of a digital RF memory used in a signal-delay application. 2 refs.« less

21 CFR 870.4230 - Cardiopulmonary bypass defoamer.

Code of Federal Regulations, 2010 CFR

2010-04-01

... 21 Food and Drugs 8 2010-04-01 2010-04-01 false Cardiopulmonary bypass defoamer. 870.4230 Section... bypass defoamer. (a) Identification. A cardiopulmonary bypass defoamer is a device used in conjunction with an oxygenator during cardiopulmonary bypass surgery to remove gas bubbles from the blood. (b...

21 CFR 870.4230 - Cardiopulmonary bypass defoamer.

Code of Federal Regulations, 2011 CFR

2011-04-01

... 21 Food and Drugs 8 2011-04-01 2011-04-01 false Cardiopulmonary bypass defoamer. 870.4230 Section... bypass defoamer. (a) Identification. A cardiopulmonary bypass defoamer is a device used in conjunction with an oxygenator during cardiopulmonary bypass surgery to remove gas bubbles from the blood. (b...

Vertical bloch line memory

NASA Technical Reports Server (NTRS)

Katti, Romney R. (Inventor); Stadler, Henry L. (Inventor); Wu, Jiin-chuan (Inventor)

1995-01-01

A new read gate design for the vertical Bloch line (VBL) memory is disclosed which offers larger operating margin than the existing read gate designs. In the existing read gate designs, a current is applied to all the stripes. The stripes that contain a VBL pair are chopped, while the stripes that do not contain a VBL pair are not chopped. The information is then detected by inspecting the presence or absence of the bubble. The margin of the chopping current amplitude is very small, and sometimes non-existent. A new method of reading Vertical Bloch Line memory is also disclosed. Instead of using the wall chirality to separate the two binary states, the spatial deflection of the stripe head is used. Also disclosed herein is a compact memory which uses vertical Bloch line (VBL) memory technology for providing data storage. A three-dimensional arrangement in the form of stacks of VBL memory layers is used to achieve high volumetric storage density. High data transfer rate is achieved by operating all the layers in parallel. Using Hall effect sensing, and optical sensing via the Faraday effect to access the data from within the three-dimensional packages, an even higher data transfer rate can be achieved due to parallel operation within each layer.

Comparison of resistive switching characteristics using copper and aluminum electrodes on GeOx/W cross-point memories

PubMed Central

2013-01-01

Comparison of resistive switching memory characteristics using copper (Cu) and aluminum (Al) electrodes on GeOx/W cross-points has been reported under low current compliances (CCs) of 1 nA to 50 μA. The cross-point memory devices are observed by high-resolution transmission electron microscopy (HRTEM). Improved memory characteristics are observed for the Cu/GeOx/W structures as compared to the Al/GeOx/W cross-points owing to AlOx formation at the Al/GeOx interface. The RESET current increases with the increase of the CCs varying from 1 nA to 50 μA for the Cu electrode devices, while the RESET current is high (>1 mA) and independent of CCs varying from 1 nA to 500 μA for the Al electrode devices. An extra formation voltage is needed for the Al/GeOx/W devices, while a low operation voltage of ±2 V is needed for the Cu/GeOx/W cross-point devices. Repeatable bipolar resistive switching characteristics of the Cu/GeOx/W cross-point memory devices are observed with CC varying from 1 nA to 50 μA, and unipolar resistive switching is observed with CC >100 μA. High resistance ratios of 102 to 104 for the bipolar mode (CCs of 1 nA to 50 μA) and approximately 108 for the unipolar mode are obtained for the Cu/GeOx/W cross-points. In addition, repeatable switching cycles and data retention of 103 s are observed under a low current of 1 nA for future low-power, high-density, nonvolatile, nanoscale memory applications. PMID:24305116

Use of the shape memory effect of a titanium nickelide spring in a suturing device for the formation of compression esophageal anastomoses.

PubMed

Robak, A N

2008-11-01

A new method for the formation of a compression esophagointestinal anastomosis is proposed. The compression force in the new device for creation of compression circular anastomoses is created by means of a titanium nickelide spring with a "shape memory" effect. Experimental study showed good prospects of the new device and the advantages of the anastomosis compression suture formed by means of this device in comparison with manual ligature suturing.

Fabrication of nylon/fullerene polymer memory

NASA Astrophysics Data System (ADS)

Jayan, Manuvel; Davis, Rosemary; Karthik, M. P.; Devika, K.; Kumar, G. Vijay; Sriraj, B.; Predeep, P.

2017-06-01

Two terminal Organic memories in passive matrix array form with device structure, Al/Nylon/ (Nylon+C60)/Nylon/ Al are fabricated. The current-voltage measurements showed hysteresis and the devices are thoroughly characterized for write-read-erase-read cycles. The control over the dispersion concentration, capacity of fullerene to readily accept electrons and the constant diameter of fullerene made possible uniform device fabrication with reproducible results. Scanning electron micrographs indicated that the device thickness remained uniform in the range of 19 micrometers.

A molecular shift register based on electron transfer

NASA Technical Reports Server (NTRS)

Hopfield, J. J.; Onuchic, Josenelson; Beratan, David N.

1988-01-01

An electronic shift-register memory at the molecular level is described. The memory elements are based on a chain of electron-transfer molecules and the information is shifted by photoinduced electron-transfer reactions. This device integrates designed electronic molecules onto a very large scale integrated (silicon microelectronic) substrate, providing an example of a 'molecular electronic device' that could actually be made. The design requirements for such a device and possible synthetic strategies are discussed. Devices along these lines should have lower energy usage and enhanced storage density.

A resistance ratio change phenomenon observed in Al doped ZnO (AZO)/Cu(In1-xGax)Se2/Mo resistive switching memory device

NASA Astrophysics Data System (ADS)

Guo, Tao; Sun, Bai; Mao, Shuangsuo; Zhu, Shouhui; Xia, Yudong; Wang, Hongyan; Zhao, Yong; Yu, Zhou

2018-03-01

In this work, the Cu(In1-xGax)Se2 (CIGS), Al doped ZnO (AZO) and Mo has been used for constructing a resistive switching device with AZO/CIGS/Mo sandwich structure grown on a transparent glass substrate. The device represents a high-performance memory characteristics under ambient temperature. In particularly, a resistance ratio change phenomenon have been observed in our device for the first time.

Application of nanomaterials in two-terminal resistive-switching memory devices

PubMed Central

Ouyang, Jianyong

2010-01-01

Nanometer materials have been attracting strong attention due to their interesting structure and properties. Many important practical applications have been demonstrated for nanometer materials based on their unique properties. This article provides a review on the fabrication, electrical characterization, and memory application of two-terminal resistive-switching devices using nanomaterials as the active components, including metal and semiconductor nanoparticles (NPs), nanotubes, nanowires, and graphenes. There are mainly two types of device architectures for the two-terminal devices with NPs. One has a triple-layer structure with a metal film sandwiched between two organic semiconductor layers, and the other has a single polymer film blended with NPs. These devices can be electrically switched between two states with significant different resistances, i.e. the ‘ON’ and ‘OFF’ states. These render the devices important application as two-terminal non-volatile memory devices. The electrical behavior of these devices can be affected by the materials in the active layer and the electrodes. Though the mechanism for the electrical switches has been in argument, it is generally believed that the resistive switches are related to charge storage on the NPs. Resistive switches were also observed on crossbars formed by nanotubes, nanowires, and graphene ribbons. The resistive switches are due to nanoelectromechanical behavior of the materials. The Coulombic interaction of transient charges on the nanomaterials affects the configurable gap of the crossbars, which results into significant change in current through the crossbars. These nanoelectromechanical devices can be used as fast-response and high-density memory devices as well. PMID:22110862

MOSFET analog memory circuit achieves long duration signal storage

NASA Technical Reports Server (NTRS)

1966-01-01

Memory circuit maintains the signal voltage at the output of an analog signal amplifier when the input signal is interrupted or removed. The circuit uses MOSFET /Metal Oxide Semiconductor Field Effect Transistor/ devices as voltage-controlled switches, triggered by an external voltage-sensing device.

Ultra-low power, highly uniform polymer memory by inserted multilayer graphene electrode

NASA Astrophysics Data System (ADS)

Jang, Byung Chul; Seong, Hyejeong; Kim, Jong Yun; Koo, Beom Jun; Kim, Sung Kyu; Yang, Sang Yoon; Gap Im, Sung; Choi, Sung-Yool

2015-12-01

Filament type resistive random access memory (RRAM) based on polymer thin films is a promising device for next generation, flexible nonvolatile memory. However, the resistive switching nonuniformity and the high power consumption found in the general filament type RRAM devices present critical issues for practical memory applications. Here, we introduce a novel approach not only to reduce the power consumption but also to improve the resistive switching uniformity in RRAM devices based on poly(1,3,5-trimethyl-3,4,5-trivinyl cyclotrisiloxane) by inserting multilayer graphene (MLG) at the electrode/polymer interface. The resistive switching uniformity was thereby significantly improved, and the power consumption was markedly reduced by 250 times. Furthermore, the inserted MLG film enabled a transition of the resistive switching operation from unipolar resistive switching to bipolar resistive switching and induced self-compliance behavior. The findings of this study can pave the way toward a new area of application for graphene in electronic devices.

Injection of a coaxial-gun-produced magnetized plasma into a background helicon plasma

NASA Astrophysics Data System (ADS)

Zhang, Yue; Lynn, Alan; Gilmore, Mark; Hsu, Scott

2014-10-01

A compact coaxial plasma gun is employed for experimental investigation of plasma bubble relaxation into a lower density background plasma. Experiments are being conducted in the linear device HelCat at UNM. The gun is powered by a 120-uF ignitron-switched capacitor bank, which is operated in a range of 5 to 10 kV and 100 kA. Multiple diagnostics are employed to investigate the plasma relaxation process. Magnetized argon plasma bubbles with velocities 1.2Cs, densities 1020 m-3 and electron temperature 13eV have been achieved. The background helicon plasma has density 1013 m-3, magnetic field from 200 to 500 Gauss and electron temperature 1eV. Several distinct operational regimes with qualitatively different dynamics are identified by fast CCD camera images. Additionally a B-dot probe array has been employed to measure the spatial toroidal and poloidal magnetic flux evolution to identify plasma bubble configurations. Experimental data and analysis will be presented.

Synergistic High Charge-Storage Capacity for Multi-level Flexible Organic Flash Memory

NASA Astrophysics Data System (ADS)

Kang, Minji; Khim, Dongyoon; Park, Won-Tae; Kim, Jihong; Kim, Juhwan; Noh, Yong-Young; Baeg, Kang-Jun; Kim, Dong-Yu

2015-07-01

Electret and organic floating-gate memories are next-generation flash storage mediums for printed organic complementary circuits. While each flash memory can be easily fabricated using solution processes on flexible plastic substrates, promising their potential for on-chip memory organization is limited by unreliable bit operation and high write loads. We here report that new architecture could improve the overall performance of organic memory, and especially meet high storage for multi-level operation. Our concept depends on synergistic effect of electrical characterization in combination with a polymer electret (poly(2-vinyl naphthalene) (PVN)) and metal nanoparticles (Copper). It is distinguished from mostly organic nano-floating-gate memories by using the electret dielectric instead of general tunneling dielectric for additional charge storage. The uniform stacking of organic layers including various dielectrics and poly(3-hexylthiophene) (P3HT) as an organic semiconductor, followed by thin-film coating using orthogonal solvents, greatly improve device precision despite easy and fast manufacture. Poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] as high-k blocking dielectric also allows reduction of programming voltage. The reported synergistic organic memory devices represent low power consumption, high cycle endurance, high thermal stability and suitable retention time, compared to electret and organic nano-floating-gate memory devices.

The strain and thermal induced tunable charging phenomenon in low power flexible memory arrays with a gold nanoparticle monolayer.

PubMed

Zhou, Ye; Han, Su-Ting; Xu, Zong-Xiang; Roy, V A L

2013-03-07

The strain and temperature dependent memory effect of organic memory transistors on plastic substrates has been investigated under ambient conditions. The gold (Au) nanoparticle monolayer was prepared and embedded in an atomic layer deposited aluminum oxide (Al(2)O(3)) as the charge trapping layer. The devices exhibited low operation voltage, reliable memory characteristics and long data retention time. Experimental analysis of the programming and erasing behavior at various bending states showed the relationship between strain and charging capacity. Thermal-induced effects on these memory devices have also been analyzed. The mobility shows ~200% rise and the memory window increases from 1.48 V to 1.8 V when the temperature rises from 20 °C to 80 °C due to thermally activated transport. The retention capability of the devices decreases with the increased working temperature. Our findings provide a better understanding of flexible organic memory transistors under various operating temperatures and validate their applications in various areas such as temperature sensors, temperature memory or advanced electronic circuits. Furthermore, the low temperature processing procedures of the key elements (Au nanoparticle monolayer and Al(2)O(3) dielectric layer) could be potentially integrated with large area flexible electronics.

Synergistic High Charge-Storage Capacity for Multi-level Flexible Organic Flash Memory.

PubMed

Kang, Minji; Khim, Dongyoon; Park, Won-Tae; Kim, Jihong; Kim, Juhwan; Noh, Yong-Young; Baeg, Kang-Jun; Kim, Dong-Yu

2015-07-23

Electret and organic floating-gate memories are next-generation flash storage mediums for printed organic complementary circuits. While each flash memory can be easily fabricated using solution processes on flexible plastic substrates, promising their potential for on-chip memory organization is limited by unreliable bit operation and high write loads. We here report that new architecture could improve the overall performance of organic memory, and especially meet high storage for multi-level operation. Our concept depends on synergistic effect of electrical characterization in combination with a polymer electret (poly(2-vinyl naphthalene) (PVN)) and metal nanoparticles (Copper). It is distinguished from mostly organic nano-floating-gate memories by using the electret dielectric instead of general tunneling dielectric for additional charge storage. The uniform stacking of organic layers including various dielectrics and poly(3-hexylthiophene) (P3HT) as an organic semiconductor, followed by thin-film coating using orthogonal solvents, greatly improve device precision despite easy and fast manufacture. Poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] as high-k blocking dielectric also allows reduction of programming voltage. The reported synergistic organic memory devices represent low power consumption, high cycle endurance, high thermal stability and suitable retention time, compared to electret and organic nano-floating-gate memory devices.

Using DMA for copying performance counter data to memory

DOEpatents

Gara, Alan; Salapura, Valentina; Wisniewski, Robert W.

2012-09-25

A device for copying performance counter data includes hardware path that connects a direct memory access (DMA) unit to a plurality of hardware performance counters and a memory device. Software prepares an injection packet for the DMA unit to perform copying, while the software can perform other tasks. In one aspect, the software that prepares the injection packet runs on a processing core other than the core that gathers the hardware performance counter data.

Using DMA for copying performance counter data to memory

DOEpatents

Gara, Alan; Salapura, Valentina; Wisniewski, Robert W

2013-12-31

A device for copying performance counter data includes hardware path that connects a direct memory access (DMA) unit to a plurality of hardware performance counters and a memory device. Software prepares an injection packet for the DMA unit to perform copying, while the software can perform other tasks. In one aspect, the software that prepares the injection packet runs on a processing core other than the core that gathers the hardware performance data.

VOP memory management in MPEG-4

NASA Astrophysics Data System (ADS)

Vaithianathan, Karthikeyan; Panchanathan, Sethuraman

2001-03-01

MPEG-4 is a multimedia standard that requires Video Object Planes (VOPs). Generation of VOPs for any kind of video sequence is still a challenging problem that largely remains unsolved. Nevertheless, if this problem is treated by imposing certain constraints, solutions for specific application domains can be found. MPEG-4 applications in mobile devices is one such domain where the opposite goals namely low power and high throughput are required to be met. Efficient memory management plays a major role in reducing the power consumption. Specifically, efficient memory management for VOPs is difficult because the lifetimes of these objects vary and these life times may be overlapping. Varying life times of the objects requires dynamic memory management where memory fragmentation is a key problem that needs to be addressed. In general, memory management systems address this problem by following a combination of strategy, policy and mechanism. For MPEG4 based mobile devices that lack instruction processors, a hardware based memory management solution is necessary. In MPEG4 based mobile devices that have a RISC processor, using a Real time operating system (RTOS) for this memory management task is not expected to be efficient because the strategies and policies used by the ROTS is often tuned for handling memory segments of smaller sizes compared to object sizes. Hence, a memory management scheme specifically tuned for VOPs is important. In this paper, different strategies, policies and mechanisms for memory management are considered and an efficient combination is proposed for the case of VOP memory management along with a hardware architecture, which can handle the proposed combination.

Indium-oxide nanoparticles for RRAM devices compatible with CMOS back-end-off-line

NASA Astrophysics Data System (ADS)

León Pérez, Edgar A. A.; Guenery, Pierre-Vincent; Abouzaid, Oumaïma; Ayadi, Khaled; Brottet, Solène; Moeyaert, Jérémy; Labau, Sébastien; Baron, Thierry; Blanchard, Nicholas; Baboux, Nicolas; Militaru, Liviu; Souifi, Abdelkader

2018-05-01

We report on the fabrication and characterization of Resistive Random Access Memory (RRAM) devices based on nanoparticles in MIM structures. Our approach is based on the use of indium oxide (In2O3) nanoparticles embedded in a dielectric matrix using CMOS-full-compatible fabrication processes in view of back-end-off-line integration for non-volatile memory (NVM) applications. A bipolar switching behavior has been observed using current-voltage measurements (I-V) for all devices. Very high ION/IOFF ratios have been obtained up to 108. Our results provide insights for further integration of In2O3 nanoparticles-based devices for NVM applications. He is currently a Postdoctoral Researcher in the Institute of Nanotechnologies of Lyon (INL), INSA de Lyon, France, in the Electronics Department. His current research include indium oxide nanoparticles for non-volatile memory applications, and the integrations of these devices in CMOS BEOL.

Filamentary model in resistive switching materials

NASA Astrophysics Data System (ADS)

Jasmin, Alladin C.

2017-12-01

The need for next generation computer devices is increasing as the demand for efficient data processing increases. The amount of data generated every second also increases which requires large data storage devices. Oxide-based memory devices are being studied to explore new research frontiers thanks to modern advances in nanofabrication. Various oxide materials are studied as active layers for non-volatile memory. This technology has potential application in resistive random-access-memory (ReRAM) and can be easily integrated in CMOS technologies. The long term perspective of this research field is to develop devices which mimic how the brain processes information. To realize such application, a thorough understanding of the charge transport and switching mechanism is important. A new perspective in the multistate resistive switching based on current-induced filament dynamics will be discussed. A simple equivalent circuit of the device gives quantitative information about the nature of the conducting filament at different resistance states.

Adaptive microwave impedance memory effect in a ferromagnetic insulator.

PubMed

Lee, Hanju; Friedman, Barry; Lee, Kiejin

2016-12-14

Adaptive electronics, which are often referred to as memristive systems as they often rely on a memristor (memory resistor), are an emerging technology inspired by adaptive biological systems. Dissipative systems may provide a proper platform to implement an adaptive system due to its inherent adaptive property that parameters describing the system are optimized to maximize the entropy production for a given environment. Here, we report that a non-volatile and reversible adaptive microwave impedance memory device can be realized through the adaptive property of the dissipative structure of the driven ferromagnetic system. Like the memristive device, the microwave impedance of the device is modulated as a function of excitation microwave passing through the device. This kind of new device may not only helpful to implement adaptive information processing technologies, but also may be useful to investigate and understand the underlying mechanism of spontaneous formation of complex and ordered structures.

Adaptive microwave impedance memory effect in a ferromagnetic insulator

PubMed Central

Lee, Hanju; Friedman, Barry; Lee, Kiejin

2016-01-01

Adaptive electronics, which are often referred to as memristive systems as they often rely on a memristor (memory resistor), are an emerging technology inspired by adaptive biological systems. Dissipative systems may provide a proper platform to implement an adaptive system due to its inherent adaptive property that parameters describing the system are optimized to maximize the entropy production for a given environment. Here, we report that a non-volatile and reversible adaptive microwave impedance memory device can be realized through the adaptive property of the dissipative structure of the driven ferromagnetic system. Like the memristive device, the microwave impedance of the device is modulated as a function of excitation microwave passing through the device. This kind of new device may not only helpful to implement adaptive information processing technologies, but also may be useful to investigate and understand the underlying mechanism of spontaneous formation of complex and ordered structures. PMID:27966536

Feasibility study of molecular memory device based on DNA using methylation to store information

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jiang, Liming; Al-Dirini, Feras; Center for Neural Engineering

DNA, because of its robustness and dense information storage capability, has been proposed as a potential candidate for next-generation storage media. However, encoding information into the DNA sequence requires molecular synthesis technology, which to date is costly and prone to synthesis errors. Reading the DNA strand information is also complex. Ideally, DNA storage will provide methods for modifying stored information. Here, we conduct a feasibility study investigating the use of the DNA 5-methylcytosine (5mC) methylation state as a molecular memory to store information. We propose a new 1-bit memory device and study, based on the density functional theory and non-equilibriummore » Green's function method, the feasibility of electrically reading the information. Our results show that changes to methylation states lead to changes in the peak of negative differential resistance which can be used to interrogate memory state. Our work demonstrates a new memory concept based on methylation state which can be beneficial in the design of next generation DNA based molecular electronic memory devices.« less

A memristor-based nonvolatile latch circuit

NASA Astrophysics Data System (ADS)

Robinett, Warren; Pickett, Matthew; Borghetti, Julien; Xia, Qiangfei; Snider, Gregory S.; Medeiros-Ribeiro, Gilberto; Williams, R. Stanley

2010-06-01

Memristive devices, which exhibit a dynamical conductance state that depends on the excitation history, can be used as nonvolatile memory elements by storing information as different conductance states. We describe the implementation of a nonvolatile synchronous flip-flop circuit that uses a nanoscale memristive device as the nonvolatile memory element. Controlled testing of the circuit demonstrated successful state storage and restoration, with an error rate of 0.1%, during 1000 power loss events. These results indicate that integration of digital logic devices and memristors could open the way for nonvolatile computation with applications in small platforms that rely on intermittent power sources. This demonstrated feasibility of tight integration of memristors with CMOS (complementary metal-oxide-semiconductor) circuitry challenges the traditional memory hierarchy, in which nonvolatile memory is only available as a large, slow, monolithic block at the bottom of the hierarchy. In contrast, the nonvolatile, memristor-based memory cell can be fast, fine-grained and small, and is compatible with conventional CMOS electronics. This threatens to upset the traditional memory hierarchy, and may open up new architectural possibilities beyond it.

Chemistry for Kids: Pop-and-Sniff Experimentation. A High-Sensory-Impact Teaching Device.

ERIC Educational Resources Information Center

Schultz, Emeric

1987-01-01

Describes the use of bubble-type plastic packing material to make "pop-and-sniff" materials that contain common smells from chemicals such as amyl acetate (banana smell). Discusses how these materials can be used by elementary school teachers to enhance thinking skills. (TW)

40 CFR 264.1031 - Definitions.

Code of Federal Regulations, 2011 CFR

2011-07-01

... with or without the application of heat to the liquid. Packed towers, spray towers, and bubble-cap.... Condenser means a heat-transfer device that reduces a thermodynamic fluid from its vapor phase to its liquid... means flanged fittings that are not covered by insulation or other materials that prevent location of...

40 CFR 264.1031 - Definitions.

Code of Federal Regulations, 2012 CFR

2012-07-01

... with or without the application of heat to the liquid. Packed towers, spray towers, and bubble-cap.... Condenser means a heat-transfer device that reduces a thermodynamic fluid from its vapor phase to its liquid... means flanged fittings that are not covered by insulation or other materials that prevent location of...

40 CFR 264.1031 - Definitions.

Code of Federal Regulations, 2010 CFR

2010-07-01

... with or without the application of heat to the liquid. Packed towers, spray towers, and bubble-cap.... Condenser means a heat-transfer device that reduces a thermodynamic fluid from its vapor phase to its liquid... means flanged fittings that are not covered by insulation or other materials that prevent location of...

40 CFR 264.1031 - Definitions.

Code of Federal Regulations, 2013 CFR

2013-07-01

... with or without the application of heat to the liquid. Packed towers, spray towers, and bubble-cap.... Condenser means a heat-transfer device that reduces a thermodynamic fluid from its vapor phase to its liquid... means flanged fittings that are not covered by insulation or other materials that prevent location of...

40 CFR 264.1031 - Definitions.

Code of Federal Regulations, 2014 CFR

2014-07-01

... with or without the application of heat to the liquid. Packed towers, spray towers, and bubble-cap.... Condenser means a heat-transfer device that reduces a thermodynamic fluid from its vapor phase to its liquid... means flanged fittings that are not covered by insulation or other materials that prevent location of...

Vapordynamic thermosyphon - heat transfer two-phase device for wide applications

NASA Astrophysics Data System (ADS)

Vasiliev, Leonard; Vasiliev, Leonid; Zhuravlyov, Alexander; Shapovalov, Aleksander; Rodin, Aleksei

2015-12-01

Vapordynamic thermosyphon (VDT) is an efficient heat transfer device. The two-phase flow generation and dynamic interaction between the liquid slugs and vapor bubbles in the annular minichannel of the VDT condenser are the main features of such thermosyphon, which allowed to increase its thermodynamic efficiency. VDT can transfer heat in horizontal position over a long distance. The condenser is nearly isothermal with the length of tens of meters. The VDT evaporators may have different forms. Some practical applications of VDT are considered.

Low operation voltage and high thermal stability of a WSi2 nanocrystal memory device using an Al2O3/HfO2/Al2O3 tunnel layer

NASA Astrophysics Data System (ADS)

Uk Lee, Dong; Jun Lee, Hyo; Kyu Kim, Eun; You, Hee-Wook; Cho, Won-Ju

2012-02-01

A WSi2 nanocrystal nonvolatile memory device was fabricated with an Al2O3/HfO2/Al2O3 (AHA) tunnel layer and its electrical characteristics were evaluated at 25, 50, 70, 100, and 125 °C. The program/erase (P/E) speed at 125 °C was approximately 500 μs under threshold voltage shifts of 1 V during voltage sweeping of 8 V/-8 V. When the applied pulse voltage was ±9 V for 1 s for the P/E conditions, the memory window at 125 °C was approximately 1.25 V after 105 s. The activation energies for the charge losses of 5%, 10%, 15%, 20%, 25%, 30%, and 35% were approximately 0.05, 0.11, 0.17, 0.21, 0.23, 0.23, and 0.23 eV, respectively. The charge loss mechanisms were direct tunneling and Pool-Frenkel emission between the WSi2 nanocrystals and the AHA barrier engineered tunneling layer. The WSi2 nanocrystal memory device with multi-stacked high-K tunnel layers showed strong potential for applications in nonvolatile memory devices.

Some Improvements in Utilization of Flash Memory Devices

NASA Technical Reports Server (NTRS)

Gender, Thomas K.; Chow, James; Ott, William E.

2009-01-01

Two developments improve the utilization of flash memory devices in the face of the following limitations: (1) a flash write element (page) differs in size from a flash erase element (block), (2) a block must be erased before its is rewritten, (3) lifetime of a flash memory is typically limited to about 1,000,000 erases, (4) as many as 2 percent of the blocks of a given device may fail before the expected end of its life, and (5) to ensure reliability of reading and writing, power must not be interrupted during minimum specified reading and writing times. The first development comprises interrelated software components that regulate reading, writing, and erasure operations to minimize migration of data and unevenness in wear; perform erasures during idle times; quickly make erased blocks available for writing; detect and report failed blocks; maintain the overall state of a flash memory to satisfy real-time performance requirements; and detect and initialize a new flash memory device. The second development is a combination of hardware and software that senses the failure of a main power supply and draws power from a capacitive storage circuit designed to hold enough energy to sustain operation until reading or writing is completed.

Design, processing, and testing of lsi arrays for space station

NASA Technical Reports Server (NTRS)

Lile, W. R.; Hollingsworth, R. J.

1972-01-01

The design of a MOS 256-bit Random Access Memory (RAM) is discussed. Technological achievements comprise computer simulations that accurately predict performance; aluminum-gate COS/MOS devices including a 256-bit RAM with current sensing; and a silicon-gate process that is being used in the construction of a 256-bit RAM with voltage sensing. The Si-gate process increases speed by reducing the overlap capacitance between gate and source-drain, thus reducing the crossover capacitance and allowing shorter interconnections. The design of a Si-gate RAM, which is pin-for-pin compatible with an RCA bulk silicon COS/MOS memory (type TA 5974), is discussed in full. The Integrated Circuit Tester (ICT) is limited to dc evaluation, but the diagnostics and data collecting are under computer control. The Silicon-on-Sapphire Memory Evaluator (SOS-ME, previously called SOS Memory Exerciser) measures power supply drain and performs a minimum number of tests to establish operation of the memory devices. The Macrodata MD-100 is a microprogrammable tester which has capabilities of extensive testing at speeds up to 5 MHz. Beam-lead technology was successfully integrated with SOS technology to make a simple device with beam leads. This device and the scribing are discussed.

Spin-transfer torque switched magnetic tunnel junctions in magnetic random access memory

NASA Astrophysics Data System (ADS)

Sun, Jonathan Z.

2016-10-01

Spin-transfer torque (or spin-torque, or STT) based magnetic tunnel junction (MTJ) is at the heart of a new generation of magnetism-based solid-state memory, the so-called spin-transfer-torque magnetic random access memory, or STT-MRAM. Over the past decades, STT-based switchable magnetic tunnel junction has seen progress on many fronts, including the discovery of (001) MgO as the most favored tunnel barrier, which together with (bcc) Fe or FeCo alloy are yielding best demonstrated tunnel magneto-resistance (TMR); the development of perpendicularly magnetized ultrathin CoFeB-type of thin films sufficient to support high density memories with junction sizes demonstrated down to 11nm in diameter; and record-low spin-torque switching threshold current, giving best reported switching efficiency over 5 kBT/μA. Here we review the basic device properties focusing on the perpendicularly magnetized MTJs, both in terms of switching efficiency as measured by sub-threshold, quasi-static methods, and of switching speed at super-threshold, forced switching. We focus on device behaviors important for memory applications that are rooted in fundamental device physics, which highlights the trade-off of device parameters for best suitable system integration.

Precision measurement of magnetic characteristics of an article with nullification of external magnetic fields

NASA Technical Reports Server (NTRS)

Honess, Shawn B. (Inventor); Narvaez, Pablo (Inventor); Mcauley, James M. (Inventor)

1992-01-01

An apparatus for characterizing the magnetic field of a device under test is discussed. The apparatus is comprised of five separate devices: (1) a device for nullifying the ambient magnetic fields in a test environment area with a constant applied magnetic field; (2) a device for rotating the device under test in the test environment area; (3) a device for sensing the magnetic field (to obtain a profile of the magnetic field) at a sensor location which is along the circumference of rotation; (4) a memory for storing the profiles; and (5) a processor coupled to the memory for characterizing the magnetic field of the device from the magnetic field profiles thus obtained.

Commander Lousma with Bubble Separation Experiment

NASA Image and Video Library

1982-03-31

S82-28914 (26 March 1982) --- Astronaut Jack R. Lousma, STS-3 commander, spins a package of colored liquid in zero-gravity aboard the Earth-orbiting space shuttle Columbia. He was actually creating a centrifuge to conduct a test involving the separation of bubbles from the liquid rehydrated strawberry powder for visible clarity. The gas from liquid experiment is a test devised by scientist-astronaut William E. Thornton. The gun-like device at center of left edge is a water-dispenser which the astronauts use in rehydrating food packets, many of which can be seen in the background of this middeck area of the Columbia. Astronaut C. Gordon Fullerton, pilot, exposed this frame with a 35mm camera. Photo credit: NASA

Influence of Thermal Annealing Treatment on Bipolar Switching Properties of Vanadium Oxide Thin-Film Resistance Random-Access Memory Devices

NASA Astrophysics Data System (ADS)

Chen, Kai-Huang; Cheng, Chien-Min; Kao, Ming-Cheng; Chang, Kuan-Chang; Chang, Ting-Chang; Tsai, Tsung-Ming; Wu, Sean; Su, Feng-Yi

2017-04-01

The bipolar switching properties and electrical conduction mechanism of vanadium oxide thin-film resistive random-access memory (RRAM) devices obtained using a rapid thermal annealing (RTA) process have been investigated in high-resistive status/low-resistive status (HRS/LRS) and are discussed herein. In addition, the resistance switching properties and quality improvement of the vanadium oxide thin-film RRAM devices were measured by x-ray diffraction (XRD) analysis, x-ray photoelectron spectrometry (XPS), scanning electron microscopy (SEM), atomic force microscopy (AFM), and current-voltage ( I- V) measurements. The activation energy of the hopping conduction mechanism in the devices was investigated based on Arrhenius plots in HRS and LRS. The hopping conduction distance and activation energy barrier were obtained as 12 nm and 45 meV, respectively. The thermal annealing process is recognized as a candidate method for fabrication of thin-film RRAM devices, being compatible with integrated circuit technology for nonvolatile memory devices.

Resistive switching characteristics of interfacial phase-change memory at elevated temperature

NASA Astrophysics Data System (ADS)

Mitrofanov, Kirill V.; Saito, Yuta; Miyata, Noriyuki; Fons, Paul; Kolobov, Alexander V.; Tominaga, Junji

2018-04-01

Interfacial phase-change memory (iPCM) devices were fabricated using W and TiN for the bottom and top contacts, respectively, and the effect of operation temperature on the resistive switching was examined over the range between room temperature and 200 °C. It was found that the high-resistance (RESET) state in an iPCM device drops sharply at around 150 °C to a low-resistance (SET) state, which differs by ˜400 Ω from the SET state obtained by electric-field-induced switching. The iPCM device SET state resistance recovered during the cooling process and remained at nearly the same value for the RESET state. These resistance characteristics greatly differ from those of the conventional Ge-Sb-Te (GST) alloy phase-change memory device, underscoring the fundamentally different switching nature of iPCM devices. From the thermal stability measurements of iPCM devices, their optimal temperature operation was concluded to be less than 100 °C.

3D gate-all-around bandgap-engineered SONOS flash memory in vertical silicon pillar with metal gate

NASA Astrophysics Data System (ADS)

Oh, Jae-Sub; Yang, Seong-Dong; Lee, Sang-Youl; Kim, Young-Su; Kang, Min-Ho; Lim, Sung-Kyu; Lee, Hi-Deok; Lee, Ga-Won

2013-08-01

In this paper, a gate-all-around bandgap-engineered silicon-oxide-nitride-oxide-silicon device with a vertical silicon pillar structure and a Ti metal gate are demonstrated for a potential solution to overcome the scaling-down of flash memory device. The devices were fabricated using CMOS-compatible technology and exhibited well-behaved memory characteristics in terms of the program/erase window, retention, and endurance properties. Moreover, the integration of the Ti metal gate demonstrated a significant improvement in the erase characteristics due to the efficient suppression of the electron back tunneling through the blocking oxide.

Homo-junction ferroelectric field-effect-transistor memory device using solution-processed lithium-doped zinc oxide thin films

NASA Astrophysics Data System (ADS)

Nayak, Pradipta K.; Caraveo-Frescas, J. A.; Bhansali, Unnat. S.; Alshareef, H. N.

2012-06-01

High performance homo-junction field-effect transistor memory devices were prepared using solution processed transparent lithium-doped zinc oxide thin films for both the ferroelectric and semiconducting active layers. A highest field-effect mobility of 8.7 cm2/Vs was obtained along with an Ion/Ioff ratio of 106. The ferroelectric thin film transistors showed a low sub-threshold swing value of 0.19 V/dec and a significantly reduced device operating voltage (±4 V) compared to the reported hetero-junction ferroelectric transistors, which is very promising for low-power non-volatile memory applications.

Spatial light modulators and applications III; Proceedings of the Meeting, San Diego, CA, Aug. 7, 8, 1989

NASA Astrophysics Data System (ADS)

Efron, Uzi

Recent advances in the technology and applications of spatial light modulators (SLMs) are discussed in review essays by leading experts. Topics addressed include materials for SLMs, SLM devices and device technology, applications to optical data processing, and applications to artificial neural networks. Particular attention is given to nonlinear optical polymers, liquid crystals, magnetooptic SLMs, multiple-quantum-well SLMs, deformable-mirror SLMs, three-dimensional optical memories, applications of photorefractive devices to optical computing, photonic neurocomputers and learning machines, holographic associative memories, SLMs as parallel memories for optoelectronic neural networks, and coherent-optics implementations of neural-network models.