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Sample records for buffer layer thickness

  1. Influence of homo buffer layer thickness on the quality of ZnO epilayers.

    PubMed

    Eid, E A; Fouda, A N

    2015-10-01

    ZnO buffer layers with different thicknesses were deposited on a-plane sapphire substrates at 300 °C. ZnO epilayers were grown on ZnO buffers at 600 °C by radio-frequency magnetron sputtering and vacuum annealed at 900 °C for an hour. Influence of nucleation layer thickness on the structural and quality of ZnO thin films was investigated using X-ray diffraction (XRD), atomic force microscopy (AFM), and Raman spectroscopy. The best ZnO film quality was obtained with the ZnO buffer layer of 45 nm thick which provided the smoothest surface with RMS value of 0.3 nm. X-ray diffraction measurements reveal that the films have a single phase wurtzite structure with (0001) preferred crystal orientation. As evident from narrow FWHM of ZnO (0002) rocking curve, ZnO buffer can serve as a good template for the growth of high-quality ZnO films with little tilt. In addition, the micro-Raman scattering measurements at room temperature revealed the existence of Raman active phonon modes of ZnO; A1(TO), A1(LO) and E2(high). The latter two modes were not observed in thin buffer layer beside the dis-appearance of E2(low) mode in all films. PMID:25950638

  2. The effect of the MgO buffer layer thickness on magnetic anisotropy in MgO/Fe/Cr/MgO buffer/MgO(001)

    NASA Astrophysics Data System (ADS)

    Kozioł-Rachwał, Anna; Nozaki, Takayuki; Zayets, Vadym; Kubota, Hitoshi; Fukushima, Akio; Yuasa, Shinji; Suzuki, Yoshishige

    2016-08-01

    The relationship between the magnetic properties and MgO buffer layer thickness d was studied in epitaxial MgO/Fe(t)/Cr/MgO(d) layers grown on MgO(001) substrate in which the Fe thickness t ranged from 0.4 nm to 1.1 nm. For 0.4 nm ≤ t ≤ 0.7 nm, a non-monotonic coercivity dependence on the MgO buffer thickness was shown by perpendicular magneto-optic Kerr effect magnetometry. For thicker Fe films, an increase in the buffer layer thickness resulted in a spin reorientation transition from perpendicular to the in-plane magnetization direction. Possible origins of these unusual behaviors were discussed in terms of the suppression of carbon contamination at the Fe surface and changes in the magnetoelastic anisotropy in the system. These results illustrate a method to control magnetic anisotropy in MgO/Fe/Cr/MgO(d) via an appropriate choice of MgO buffer layer thickness d.

  3. Threading dislocations in GaAs epitaxial layers on various thickness Ge buffers on 300 mm Si substrates

    NASA Astrophysics Data System (ADS)

    Bogumilowicz, Y.; Hartmann, J. M.; Rochat, N.; Salaun, A.; Martin, M.; Bassani, F.; Baron, T.; David, S.; Bao, X.-Y.; Sanchez, E.

    2016-11-01

    We have grown GaAs epitaxial layers on Ge buffers, themselves on Si (001) substrates, using an Applied Materials 300 mm metal organic chemical vapor deposition tool. We varied the Ge buffer thickness between 0.36 and 1.38 μm and studied the properties of a 0.27 μm thick GaAs layer on top. We found that increasing the Ge buffer thickness yielded smoother GaAs films with an rms surface roughness as low as 0.5 nm obtained on a 5×5 μm2 area. The bow of the substrate increased following a linear law with the epitaxial stack thickness up to 240 μm for a 1.65 μm stack. We have also characterized the threading dislocations present in the GaAs layers using X-ray diffraction and cathodoluminescence. Increasing the Ge buffer thickness resulted in lower threading dislocation densities, enabling us to obtain anti-phase boundary - free GaAs films with a threading dislocation density as low as 3×107 cm-2. In addition, atomic force microscopy surface topology measurements showed the presence of pits in the GaAs layers whose density agreed well with other threading dislocation density assessments. It thus seems that threading dislocations can in certain cases induce some growth rate variations, making them visible in as-grown GaAs films. Using thicker Ge buffers results in smoother films with less threading dislocations, with the side effect of increasing the bow on the wafer. If bow is not an issue, this is a practical approach to improve the GaAs (on Ge buffer) on silicon quality.

  4. Impact of buffer layer and Pt thickness on the interface structure and magnetic properties in (Co/Pt) multilayers

    NASA Astrophysics Data System (ADS)

    Bersweiler, M.; Dumesnil, K.; Lacour, D.; Hehn, M.

    2016-08-01

    The influence of Pt thickness on the interface structure (roughness / intermixing) and magnetic properties has been investigated for (Co / Pt) multilayers sputtered on a Pt or a thin oxide (MgO or AlO x ) buffer layer. When Pt thickness increases from 1.2 nm–2.2 nm, we observe that the effective anisotropy increases with the Pt thickness, simultaneously with the decrease of roughness, i.e. the occurrence of sharper interfaces. Perpendicular magnetic anisotropy (PMA) is still achieved on the oxide buffer layers, but with a lower effective anisotropy correlated to more perturbed interfaces. The detailed analysis of the saturation magnetization shows that: (i) M s is significantly enhanced in the case of rough/intermixed interfaces, which is attributed to and discussed in the framework of Pt induced polarization, (ii) the change in volume dipolar anisotropy is the main factor responsible for the reduction of K eff for systems grown on oxides. Beyond the major role of volume dipolar contribution that reduces PMA, a supplemental positive contribution promoting PMA can be invoked for rough interfaces and large M s (deposit on oxide). This contribution is consistent with a dipolar surface anisotropy term and increases for rough interfaces, in contrast to the Néel surface anisotropy. These opposite variations may interestingly lead to an enhanced anisotropy in (Co / Pt) stackings grown on oxides compared to systems deposited on Pt, i.e. with sharper interfaces.

  5. Impact of buffer layer and Pt thickness on the interface structure and magnetic properties in (Co/Pt) multilayers

    NASA Astrophysics Data System (ADS)

    Bersweiler, M.; Dumesnil, K.; Lacour, D.; Hehn, M.

    2016-08-01

    The influence of Pt thickness on the interface structure (roughness / intermixing) and magnetic properties has been investigated for (Co / Pt) multilayers sputtered on a Pt or a thin oxide (MgO or AlO x ) buffer layer. When Pt thickness increases from 1.2 nm-2.2 nm, we observe that the effective anisotropy increases with the Pt thickness, simultaneously with the decrease of roughness, i.e. the occurrence of sharper interfaces. Perpendicular magnetic anisotropy (PMA) is still achieved on the oxide buffer layers, but with a lower effective anisotropy correlated to more perturbed interfaces. The detailed analysis of the saturation magnetization shows that: (i) M s is significantly enhanced in the case of rough/intermixed interfaces, which is attributed to and discussed in the framework of Pt induced polarization, (ii) the change in volume dipolar anisotropy is the main factor responsible for the reduction of K eff for systems grown on oxides. Beyond the major role of volume dipolar contribution that reduces PMA, a supplemental positive contribution promoting PMA can be invoked for rough interfaces and large M s (deposit on oxide). This contribution is consistent with a dipolar surface anisotropy term and increases for rough interfaces, in contrast to the Néel surface anisotropy. These opposite variations may interestingly lead to an enhanced anisotropy in (Co / Pt) stackings grown on oxides compared to systems deposited on Pt, i.e. with sharper interfaces.

  6. Effects of AlN buffer layer thickness on the crystallinity and surface morphology of 10-µm-thick a-plane AlN films grown on r-plane sapphire substrates

    NASA Astrophysics Data System (ADS)

    Lin, Chia-Hung; Tamaki, Shinya; Yamashita, Yasuhiro; Miyake, Hideto; Hiramatsu, Kazumasa

    2016-08-01

    10-µm-thick a-plane AlN(11\\bar{2}0) films containing a low-temperature AlN (LT-AlN) buffer layer and a high-temperature AlN (HT-AlN) film were prepared on r-plane sapphire (1\\bar{1}02) substrates. The crystallinity of all the samples with different LT-AlN buffer layer thicknesses was improved after thermal annealing and HT-AlN growth, mainly owing to the elimination of domain boundaries and the concurrent suppression of facet formation. The optimum crystallinity of HT-AlN films was obtained with full widths at half maximum of the X-ray rocking curves of 660 arcsec for AlN(11\\bar{2}0)\\parallel [1\\bar{1}00]AlN and 840 arcsec for (0002) using a 200-nm-thick LT-AlN buffer layer.

  7. Control of stress and threading dislocation density in the thick GaN/AlN buffer layers grown on Si (111) substrates by low- temperature MBE

    NASA Astrophysics Data System (ADS)

    Zolotukhin, D.; Nechaev, D.; Kuznetsova, N.; Ratnikov, V.; Rouvimov, S.; Jmerik, V.; Ivanov, S.

    2016-08-01

    We report on successful growth by plasma-assisted molecular beam epitaxy on a Si(111) substrate crack-free GaN/AlN buffer layers with a thickness more than 1 μm. The layers fabricated at relatively low growth temperature of 780°C have at room temperature the residual compressive stress of -97 MPa. Intrinsic stress evolution during the GaN growth was monitored in situ with a multi-beam optical system. Strong dependence of a stress relaxation ratio in the growing layer vs growth temperature was observed. The best-quality crack-free layers with TDs density of ∼⃒109 cm-2 and roughly zero bowing were obtained in the sample with sharp 2D-GaN/2D-AlN interface.

  8. Influence of contact shape on AlGaN/GaN Schottky diode prepared on Si with thick buffer layer

    NASA Astrophysics Data System (ADS)

    Kumar, Manoj; Sekiguchi, Hiroto; Okada, Hiroshi; Wakahara, Akihiro

    2013-09-01

    A report on the fabrication and characterization of high performance conventional and ring-shaped AlGaN/GaN Schottky barrier diode on Si is presented. The resulting device exhibited low leakage current, which led to a detectivity performance of 3.48×1013 and 1.76×1013 cm Hz1/2 W-1, respectively, for both conventional and ring-shaped Schottky diode. The differential resistances of both devices were obtained at approximately 1.37×1012 and 1.41×1013 Ω, respectively. The zero bias peak responsivities of conventional and ring-shaped Schottky diodes were estimated to be 3.18 and 2.08 A cm-2/W, respectively. The typical UV to visible rejection ratio was observed over three orders of magnitude at zero bias. The C- V measurements was used to calculate and analyze the polarization sheet charge density of the AlGaN barrier layer by using self-consistently solving Schrodinger's and Poisson's equations. It is demonstrated that the ring shape of the Schottky barrier has higher polarization sheet charge density, which has the consequence that the Schottky shape has influence on the strain of the AlGaN barrier layer.

  9. Doped LZO buffer layers for laminated conductors

    DOEpatents

    Paranthaman, Mariappan Parans [Knoxville, TN; Schoop, Urs [Westborough, MA; Goyal, Amit [Knoxville, TN; Thieme, Cornelis Leo Hans [Westborough, MA; Verebelyi, Darren T [Oxford, MA; Rupich, Martin W [Framingham, MA

    2010-03-23

    A laminated conductor includes a metallic substrate having a surface, a biaxially textured buffer layer supported by the surface of the substrate, the biaxially textured buffer layer comprising LZO and a dopant for mitigating metal diffusion through the LZO, and a biaxially textured conductor layer supported by the biaxially textured buffer layer.

  10. Effect of different thickness crystalline SiC buffer layers on the ordering of MgB{sub 2} films probed by extended x-ray absorption fine structure

    SciTech Connect

    Putri, W. B. K.; Tran, D. H.; Kang, B.; Lee, O. Y.; Kang, W. N.; Miyanaga, T.; Yang, D. S.

    2014-03-07

    Extended X-ray absorption fine structure (EXAFS) spectroscopy is a powerful method to investigate the local structure of thin films. Here, we have studied EXAFS of MgB{sub 2} films grown on SiC buffer layers. Crystalline SiC buffer layers with different thickness of 70, 100, and 130 nm were deposited on the Al{sub 2}O{sub 3} (0001) substrates by using a pulsed laser deposition method, and then MgB{sub 2} films were grown on the SiC buffer layer by using a hybrid physical-chemical vapor deposition technique. Transition temperature of MgB{sub 2} film decreased with increasing thickness of SiC buffer layer. However, the T{sub c} dropping went no farther than 100 nm-thick-SiC. This uncommon behavior of transition temperature is likely to be created from electron-phonon interaction in MgB{sub 2} films, which is believed to be related to the ordering of MgB{sub 2} atomic bonds, especially in the ordering of Mg–Mg bonds. Analysis from Mg K-edge EXAFS measurements showed interesting ordering behavior of MgB{sub 2} films. It is noticeable that the ordering of Mg–B bonds is found to decrease monotonically with the increase in SiC thickness of the MgB{sub 2} films, while the opposite happens with the ordering in Mg–Mg bonds. Based on these results, crystalline SiC buffer layers in MgB{sub 2} films seemingly have evident effects on the alteration of the local structure of the MgB{sub 2} film.

  11. Effects of Low-Oxygen-Content Metalorganic Precursors on AlInAs and High Electron Mobility Transistor Structures with the Thick AlInAs Buffer Layer

    NASA Astrophysics Data System (ADS)

    Tanaka, Tsuyoshi; Tokudome, Kohichi; Miyamoto, Yasuyuki

    2003-08-01

    We investigated the effects of low-oxygen-content metalorganic precursors on oxygen impurities and Hall mobility. The oxygen concentration in the AlInAs layer was less than 2× 1017 cm-3 under all growth conditions. We confirmed the high mobility of the AlInAs/InP high electron mobility transistors (HEMT) structure with the AlInAs buffer layer (5,500 cm2/V\\cdots at 300 K, and 110,000 cm2/V\\cdots at 77 K). For the AlInAs/GaInAs HEMT structure with the same buffer layer, we obtained the high mobility (12,000 cm2/V\\cdots at 300 K, and 92,000 cm2/V\\cdots at 77 K).

  12. Buffer layer for thin film structures

    DOEpatents

    Foltyn, Stephen R.; Jia, Quanxi; Arendt, Paul N.; Wang, Haiyan

    2010-06-15

    A composite structure including a base substrate and a layer of a mixture of strontium titanate and strontium ruthenate is provided. A superconducting article can include a composite structure including an outermost layer of magnesium oxide, a buffer layer of strontium titanate or a mixture of strontium titanate and strontium ruthenate and a top-layer of a superconducting material such as YBCO upon the buffer layer.

  13. Buffer layer for thin film structures

    DOEpatents

    Foltyn, Stephen R.; Jia, Quanxi; Arendt, Paul N.; Wang, Haiyan

    2006-10-31

    A composite structure including a base substrate and a layer of a mixture of strontium titanate and strontium ruthenate is provided. A superconducting article can include a composite structure including an outermost layer of magnesium oxide, a buffer layer of strontium titanate or a mixture of strontium titanate and strontium ruthenate and a top-layer of a superconducting material such as YBCO upon the buffer layer.

  14. Photo-induced wettability of TiO{sub 2} film with Au buffer layer

    SciTech Connect

    Purkayastha, Debarun Dhar; Sangani, L. D. Varma; Krishna, M. Ghanashyam; Madhurima, V.

    2014-04-24

    The effect of thickness of Au buffer layer (15-25 nm) between TiO{sub 2} film and substrate on the wettability of TiO{sub 2} films is reported. TiO{sub 2} films grown on Au buffer layer have a higher contact angle of 96-;100° as compared to 47.6o for the film grown without buffer layer. The transition from hydrophobicity to hydrophilicity under UV irradiation occurs within 10 min. for the buffer layered films whereas it is almost 30 min. for the film grown without buffer layer. The enhanced photo induced hydrophilicity is shown to be surface energy driven.

  15. Leakage effects in n-GaAs MESFET with n-GaAs buffer layer

    NASA Technical Reports Server (NTRS)

    Wang, Y. C.; Bahrami, M.

    1983-01-01

    Whereas improvement of the interface between the active layer and the buffer layer has been demonstrated, the leakage effects can be important if the buffer layer resistivity is not sufficiently high and/or the buffer layer thickness is not sufficiently small. It was found that two buffer leakage currents exist from the channel under the gate to the source and from drain to the channel in addition to the buffer leakage resistance between drain and source. It is shown that for a 1 micron gate-length n-GaAs MESFET, if the buffer layer resistivity is 12 OHM-CM and the buffer layer thickness h is 2 microns, the performance of the device degrades drastically. It is suggested that h should be below 2 microns.

  16. Buffer layers for coated conductors

    DOEpatents

    Stan, Liliana; Jia, Quanxi; Foltyn, Stephen R.

    2011-08-23

    A composite structure is provided including a base substrate, an IBAD oriented material upon the base substrate, and a cubic metal oxide material selected from the group consisting of rare earth zirconates and rare earth hafnates upon the IBAD oriented material. Additionally, an article is provided including a base substrate, an IBAD oriented material upon the base substrate, a cubic metal oxide material selected from the group consisting of rare earth zirconates and rare earth hafnates upon the IBAD oriented material, and a thick film upon the cubic metal oxide material. Finally, a superconducting article is provided including a base substrate, an IBAD oriented material upon the base substrate, a cubic metal oxide material selected from the group consisting of rare earth zirconates and rare earth hafnates upon the IBAD oriented material, and an yttrium barium copper oxide material upon the cubic metal oxide material.

  17. Buffer layers on biaxially textured metal substrates

    DOEpatents

    Shoup, Shara S.; Paranthamam, Mariappan; Beach, David B.; Kroeger, Donald M.; Goyal, Amit

    2001-01-01

    A method is disclosed for forming a biaxially textured buffer layer on a biaxially oriented metal substrate by using a sol-gel coating technique followed by pyrolyzing/annealing in a reducing atmosphere. This method is advantageous for providing substrates for depositing electronically active materials thereon.

  18. buffer Layer Growth, the Thickness Dependence of Jc in Coated Conductors, Local Identification of Current Limiting Mechanisms and Participation in the Wire Development Group

    SciTech Connect

    Larbalestier, David; Hellstron, Eric; Abraimov, Dmytro

    2011-12-17

    The primary thrusts of our work were to provide critical understanding of how best to enhance the current-carrying capacity of coated conductors. These include the deconstruction of Jc as a function of fim thickness, the growth of in situ films incorporating strong pinning centers and the use of a suite of position-sensitive tools that enable location and analysis of key areas where current-limiting occurs.

  19. An ultra-thin buffer layer for Ge epitaxial layers on Si

    SciTech Connect

    Kawano, M.; Yamada, S.; Tanikawa, K.; Miyao, M.; Hamaya, K.; Sawano, K.

    2013-03-25

    Using an Fe{sub 3}Si insertion layer, we study epitaxial growth of Ge layers on a Si substrate by a low-temperature molecular beam epitaxy technique. When we insert only a 10-nm-thick Fe{sub 3}Si layer in between Si and Ge, epitaxial Ge layers can be obtained on Si. The detailed structural characterizations reveal that a large lattice mismatch of {approx}4% is completely relaxed in the Fe{sub 3}Si layer. This means that the Fe{sub 3}Si layers can become ultra-thin buffer layers for Ge on Si. This method will give a way to realize a universal buffer layer for Ge, GaAs, and related devices on a Si platform.

  20. Buffer layers and articles for electronic devices

    DOEpatents

    Paranthaman, Mariappan P.; Aytug, Tolga; Christen, David K.; Feenstra, Roeland; Goyal, Amit

    2004-07-20

    Materials for depositing buffer layers on biaxially textured and untextured metallic and metal oxide substrates for use in the manufacture of superconducting and other electronic articles comprise RMnO.sub.3, R.sub.1-x A.sub.x MnO.sub.3, and combinations thereof; wherein R includes an element selected from the group consisting of La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, and Y, and A includes an element selected from the group consisting of Be, Mg, Ca, Sr, Ba, and Ra.

  1. Back contact buffer layer for thin-film solar cells

    DOEpatents

    Compaan, Alvin D.; Plotnikov, Victor V.

    2014-09-09

    A photovoltaic cell structure is disclosed that includes a buffer/passivation layer at a CdTe/Back contact interface. The buffer/passivation layer is formed from the same material that forms the n-type semiconductor active layer. In one embodiment, the buffer layer and the n-type semiconductor active layer are formed from cadmium sulfide (CdS). A method of forming a photovoltaic cell includes the step of forming the semiconductor active layers and the buffer/passivation layer within the same deposition chamber and using the same material source.

  2. Flexible Protocrystalline Silicon Solar Cells with Amorphous Buffer Layer

    NASA Astrophysics Data System (ADS)

    Ishikawa, Yasuaki; Schubert, Markus B.

    2006-09-01

    A low deposition temperature of 110 °C is mandatory for directly growing amorphous-silicon-based solar cells on plastic foil. The optimum absorber material at this low temperature is protocrystalline, i.e., right at the transition between amorphous and crystalline silicon. Polyethylene terephtalate foil of 50 μm thickness form the substrate of our flexible p-i-n single-junction cells. We discuss three peculiar processing techniques for achieving the maximum photovoltaic conversion efficiency of flexible low-temperature solar cells. First, we employ an optimized microcrystalline silicon p-type window layer; second, we use protocrystalline silicon for the i-layer; third, we insert an undoped amorphous silicon buffer layer at the p/i interface. The best flexible cells attain power conversion efficiencies of up to 4.9%.

  3. Effects of SrRuO{sub 3} buffer layer thickness on multiferroic (Bi{sub 0.90}La{sub 0.10})(Fe{sub 0.95}Mn{sub 0.05})O{sub 3} thin films

    SciTech Connect

    Wu Jiagang; Wang, John

    2009-09-01

    Multiferroic (Bi{sub 0.90}La{sub 0.10})(Fe{sub 0.95}Mn{sub 0.05})O{sub 3} (BLFMO) thin films were deposited on SrRuO{sub 3} (SRO) buffered Pt/TiO{sub 2}/SiO{sub 2}/Si(100) substrates with variable buffer layer thicknesses by using off-axis radio frequency sputtering. The orientation of BLFMO thin films is dependent on the SRO buffer layer thickness, which leads to a change in ferroelectric behavior. Due to the low leakage currents arising from the orientation change in association with the variation in SRO buffer layer thickness and the La and Mn codoping, well saturated P-E hysteresis loops (2P{sub r}approx210.0 muC/cm{sup 2} and 2E{sub c}approx525.5 kV/cm) are shown for the (111)-oriented BLFMO thin film at room temperature and 1 kHz. It also demonstrates little ferroelectric fatigue on 10{sup 9} switching cycles. Moreover, the BLFMO thin film exhibits the enhanced magnetic behavior as compared to pure BFO thin films, due to the canting of antiferromagnetically ordered spins.

  4. 1,3,5-Tris(phenyl-2-benzimidazole)-benzene cathode buffer layer thickness dependence in solution-processable organic solar cell based on 1,4,8,11,15,18,22,25-octahexylphthalocyanine

    NASA Astrophysics Data System (ADS)

    De Roméo Banoukepa, Gilles; Fujii, Akihiko; Shimizu, Yo; Ozaki, Masanori

    2015-04-01

    Studies on the insertion effects of a cathode buffer layer on bulk heterojunction organic solar cell based on 1,4,8,11,15,18,22,25-octahexylphthalocyanine (C6PcH2) and 1-(3-methoxy-carbonyl)-propyl-1-1-phenyl-(6,6)C61 (PCBM) by using 1,3,5-tris(phenyl-2-benzimidazole)-benzene (TPBi) as a cathode buffer layer material have been carried out. The external quantum efficiency and the short-circuit current markedly increased, resulting in the enhancement of the power conversion efficiency. The solar cell performance has been discussed from the atomic force microscopy, photoelectron yield spectroscopy and X-ray photoelectron spectroscopy measurements.

  5. Simulation study on single event burnout in linear doping buffer layer engineered power VDMOSFET

    NASA Astrophysics Data System (ADS)

    Yunpeng, Jia; Hongyuan, Su; Rui, Jin; Dongqing, Hu; Yu, Wu

    2016-02-01

    The addition of a buffer layer can improve the device's secondary breakdown voltage, thus, improving the single event burnout (SEB) threshold voltage. In this paper, an N type linear doping buffer layer is proposed. According to quasi-stationary avalanche simulation and heavy ion beam simulation, the results show that an optimized linear doping buffer layer is critical. As SEB is induced by heavy ions impacting, the electric field of an optimized linear doping buffer device is much lower than that with an optimized constant doping buffer layer at a given buffer layer thickness and the same biasing voltages. Secondary breakdown voltage and the parasitic bipolar turn-on current are much higher than those with the optimized constant doping buffer layer. So the linear buffer layer is more advantageous to improving the device's SEB performance. Project supported by the National Natural Science Foundation of China (No. 61176071), the Doctoral Fund of Ministry of Education of China (No. 20111103120016), and the Science and Technology Program of State Grid Corporation of China (No. SGRI-WD-71-13-006).

  6. Buffer layers for REBCO films for use in superconducting devices

    SciTech Connect

    Goyal, Amit; Wee, Sung-Hun

    2014-06-10

    A superconducting article includes a substrate having a biaxially textured surface. A biaxially textured buffer layer, which can be a cap layer, is supported by the substrate. The buffer layer includes a double perovskite of the formula A.sub.2B'B''O.sub.6, where A is rare earth or alkaline earth metal and B' and B'' are different transition metal cations. A biaxially textured superconductor layer is deposited so as to be supported by the buffer layer. A method of making a superconducting article is also disclosed.

  7. Buffer layers on metal alloy substrates for superconducting tapes

    DOEpatents

    Jia, Quanxi; Foltyn, Stephen R.; Arendt, Paul N.; Groves, James R.

    2004-10-05

    An article including a substrate, at least one intermediate layer upon the surface of the substrate, a layer of an oriented cubic oxide material having a rock-salt-like structure upon the at least one intermediate layer, and a layer of a SrRuO.sub.3 buffer material upon the oriented cubic oxide material layer is provided together with additional layers such as a HTS top-layer of YBCO directly upon the layer of a SrRuO.sub.3 buffer material layer. With a HTS top-layer of YBCO upon at least one layer of the SrRuO.sub.3 buffer material in such an article, J.sub.c 's of up to 1.3.times.10.sup.6 A/cm.sup.2 have been demonstrated with projected I.sub.c 's of over 200 Amperes across a sample 1 cm wide.

  8. Current isolating epitaxial buffer layers for high voltage photodiode array

    DOEpatents

    Morse, Jeffrey D.; Cooper, Gregory A.

    2002-01-01

    An array of photodiodes in series on a common semi-insulating substrate has a non-conductive buffer layer between the photodiodes and the semi-insulating substrate. The buffer layer reduces current injection leakage between the photodiodes of the array and allows optical energy to be converted to high voltage electrical energy.

  9. Mitigation of substrate defects in reticles using multilayer buffer layers

    DOEpatents

    Mirkarimi, Paul B.; Bajt, Sasa; Stearns, Daniel G.

    2001-01-01

    A multilayer film is used as a buffer layer to minimize the size of defects on a reticle substrate prior to deposition of a reflective coating on the substrate. The multilayer buffer layer deposited intermediate the reticle substrate and the reflective coating produces a smoothing of small particles and other defects on the reticle substrate. The reduction in defect size is controlled by surface relaxation during the buffer layer growth process and by the degree of intermixing and volume contraction of the materials at the multilayer interfaces. The buffer layers are deposited at near-normal incidence via a low particulate ion beam sputtering process. The growth surface of the buffer layer may also be heated by a secondary ion source to increase the degree of intermixing and improve the mitigation of defects.

  10. Controlling optical polarization of {11-22} semipolar multiple quantum wells using relaxed underlying InGaN buffer layers

    NASA Astrophysics Data System (ADS)

    Okada, Narihito; Okamura, Yasuhiro; Uchida, Katsumi; Tadatomo, Kazuyuki

    2016-08-01

    We successfully fabricated {11-22} multiple quantum wells (MQWs) having different emission peak wavelengths on partially or completely relaxed thick InGaN buffer layers with different In contents formed on a semipolar {11-22} GaN layer, which was grown on a patterned r-plane sapphire substrate. The polarization properties changed significantly with changing in In content and thickness for InGaN buffer layer. For the same In content of the InGaN buffer layer, the optical polarization changed with an increase in the thickness of the underlying InGaN buffer layer, indicating a change in the relaxation ratio of the InGaN buffer layer. Similarly, for the same thickness of the InGaN buffer layer, the optical polarization changed by changing In content of the InGaN buffer layer. Thus, the degree of optical polarization could be controlled by varying the In content of the underlying InGaN buffer layer.

  11. Methods for improved growth of group III nitride buffer layers

    DOEpatents

    Melnik, Yurity; Chen, Lu; Kojiri, Hidehiro

    2014-07-15

    Methods are disclosed for growing high crystal quality group III-nitride epitaxial layers with advanced multiple buffer layer techniques. In an embodiment, a method includes forming group III-nitride buffer layers that contain aluminum on suitable substrate in a processing chamber of a hydride vapor phase epitaxy processing system. A hydrogen halide or halogen gas is flowing into the growth zone during deposition of buffer layers to suppress homogeneous particle formation. Some combinations of low temperature buffers that contain aluminum (e.g., AlN, AlGaN) and high temperature buffers that contain aluminum (e.g., AlN, AlGaN) may be used to improve crystal quality and morphology of subsequently grown group III-nitride epitaxial layers. The buffer may be deposited on the substrate, or on the surface of another buffer. The additional buffer layers may be added as interlayers in group III-nitride layers (e.g., GaN, AlGaN, AlN).

  12. Degradation Characteristics of MgO Based Magnetic Tunnel Junction Caused by Surface Roughness of Ta/Ru Buffer Layers.

    PubMed

    Lee, Jung Min; Choi, Chul Min; Sukegawa, Hiroaki; Lee, Jeong Yong; Mitani, Seiji; Song, Yun-Heub

    2016-01-01

    We investigated how surface roughness of a Ta/Ru buffer layer affects the degradation characteristics on MgO-based magnetic tunnel junctions (MTJs). MTJs with worse surface roughness on the buffer layer showed increased resistance drift and degraded time-dependent dielectric breakdown (TDDB) characteristics. We suggest that this resulted from reduced MgO thickness on the MTJ with worse surface roughness on the buffer layer, which was estimated by the TDDB and analytic approach. As a result, surface roughness of the buffer layer is a critical factors that impacts the reliability of MTJs, and it should be controlled to have the smallest roughness value as possible. PMID:27398503

  13. On buffer layers as non-reflecting computational boundaries

    NASA Technical Reports Server (NTRS)

    Hayder, M. Ehtesham; Turkel, Eli L.

    1996-01-01

    We examine an absorbing buffer layer technique for use as a non-reflecting boundary condition in the numerical simulation of flows. One such formulation was by Ta'asan and Nark for the linearized Euler equations. They modified the flow inside the buffer zone to artificially make it supersonic in the layer. We examine how this approach can be extended to the nonlinear Euler equations. We consider both a conservative and a non-conservative form modifying the governing equations in the buffer layer. We compare this with the case that the governing equations in the layer are the same as in the interior domain. We test the effectiveness of these buffer layers by a simulation of an excited axisymmetric jet based on a nonlinear compressible Navier-Stokes equations.

  14. Buffer layers for high-Tc thin films on sapphire

    NASA Technical Reports Server (NTRS)

    Wu, X. D.; Foltyn, S. R.; Muenchausen, R. E.; Cooke, D. W.; Pique, A.; Kalokitis, D.; Pendrick, V.; Belohoubek, E.

    1992-01-01

    Buffer layers of various oxides including CeO2 and yttrium-stabilized zirconia (YSZ) have been deposited on R-plane sapphire. The orientation and crystallinity of the layers were optimized to promote epitaxial growth of YBa2Cu3O(7-delta) (YBCO) thin films. An ion beam channeling minimum yield of about 3 percent was obtained in the CeO2 layer on sapphire, indicating excellent crystallinity of the buffer layer. Among the buffer materials used, CeO2 was found to be the best one for YBCO thin films on R-plane sapphire. High Tc and Jc were obtained in YBCO thin films on sapphire with buffer layers. Surface resistances of the YBCO films were about 4 mOmega at 77 K and 25 GHz.

  15. Enhanced adhesion for LIGA microfabrication by using a buffer layer

    DOEpatents

    Bajikar, Sateesh S.; De Carlo, Francesco; Song, Joshua J.

    2001-01-01

    The present invention is an improvement on the LIGA microfabrication process wherein a buffer layer is applied to the upper or working surface of a substrate prior to the placement of a resist onto the surface of the substrate. The buffer layer is made from an inert low-Z material (low atomic weight), a material that absorbs secondary X-rays emissions from the substrate that are generated from the substrate upon exposure to a primary X-rays source. Suitable materials for the buffer layer include polyamides and polyimide. The preferred polyimide is synthesized form pyromellitic anhydride and oxydianiline (PMDA-ODA).

  16. Enhanced adhesion for LIGA microfabrication by using a buffer layer

    DOEpatents

    Bajikar, Sateesh S.; De Carlo, Francesco; Song, Joshua J.

    2004-01-27

    The present invention is an improvement on the LIGA microfabrication process wherein a buffer layer is applied to the upper or working surface of a substrate prior to the placement of a resist onto the surface of the substrate. The buffer layer is made from an inert low-Z material (low atomic weight), a material that absorbs secondary X-rays emissions from the substrate that are generated from the substrate upon exposure to a primary X-rays source. Suitable materials for the buffer layer include polyamides and polyimide. The preferred polyimide is synthesized form pyromellitic anhydride and oxydianiline (PMDA-ODA).

  17. Buffer layer effect on ZnO nanorods growth alignment

    NASA Astrophysics Data System (ADS)

    Zhao, Dongxu; Andreazza, Caroline; Andreazza, Pascal; Ma, Jiangang; Liu, Yichun; Shen, Dezhen

    2005-06-01

    Vertical aligned ZnO nanorods array was fabricated on Si with introducing a ZnO thin film as a buffer layer. Two different nucleation mechanisms were found in growth process. With using Au catalyst, Zn vapor could diffuse into Au nanoclusters with forming a solid solution. Then the ZnO nucleation site is mainly on the catalyst by oxidation of Au/Zn alloy. Without catalyst, nucleation could occur directly on the surface of buffer layer by homoepitaxy. The density and the size of ZnO nanorods could be governed by morphological character of catalyst and buffer layer. The nanorods growth is followed by vapor-solid mechanism.

  18. Rare earth zirconium oxide buffer layers on metal substrates

    DOEpatents

    Williams, Robert K.; Paranthaman, Mariappan; Chirayil, Thomas G.; Lee, Dominic F.; Goyal, Amit; Feenstra, Roeland

    2001-01-01

    A laminate article comprises a substrate and a biaxially textured (RE.sub.x A.sub.(1-x)).sub.2 O.sub.2-(x/2) buffer layer over the substrate, wherein 0buffer layer can be deposited using sol-gel or metal-organic decomposition. The laminate article can include a layer of YBCO over the (RE.sub.x A.sub.(1-x)).sub.2 O.sub.2-(x/2) buffer layer. A layer of CeO.sub.2 between the YBCO layer and the (RE.sub.x A.sub.(1-x)).sub.2 O.sub.2-(x/2) buffer layer can also be include. Further included can be a layer of YSZ between the CeO.sub.2 layer and the (RE.sub.x A.sub.(1-x)).sub.2 O.sub.2-(x/2) buffer layer. The substrate can be a biaxially textured metal, such as nickel. A method of forming the laminate article is also disclosed.

  19. GaAs buffer layer technique for vertical nanowire growth on Si substrate

    SciTech Connect

    Xu, Xiaoqing Parizi, Kokab B.; Huo, Yijie; Kang, Yangsen; Philip Wong, H.-S.; Li, Yang

    2014-02-24

    Gold catalyzed vapor-liquid-solid method is widely applied to III–V nanowire (NW) growth on Si substrate. However, the easy oxidation of Si, possible Si contamination in the NWs, high defect density in the NWs, and high sensitivity of the NW morphology to growth conditions largely limit its controllability. In this work, we developed a buffer layer technique by introducing a GaAs thin film with predefined polarity as a template. It is found that samples grown on these buffer layers all have high vertical NW yields in general, due to the single-orientation of the buffer layers. Low temperature buffer with smoother surface leads to highest yield of vertical NWs, while high temperature (HT) buffer with better crystallinity results in perfect NW quality. The defect-free property we observed here is very promising for optoelectronic device applications based on GaAs NW. Moreover, the buffer layers can eliminate Si contamination by preventing Si-Au alloy formation and by increasing the thickness of the Si diffusion barrier, thus providing more flexibility to vertical NW growth. The buffer layer technique we demonstrated here could be easily extended to other III-V on Si system for electronic and photonic applications.

  20. Hafnium nitride buffer layers for growth of GaN on silicon

    DOEpatents

    Armitage, Robert D.; Weber, Eicke R.

    2005-08-16

    Gallium nitride is grown by plasma-assisted molecular-beam epitaxy on (111) and (001) silicon substrates using hafnium nitride buffer layers. Wurtzite GaN epitaxial layers are obtained on both the (111) and (001) HfN/Si surfaces, with crack-free thickness up to 1.2 {character pullout}m. However, growth on the (001) surface results in nearly stress-free films, suggesting that much thicker crack-free layers could be obtained.

  1. Method of depositing buffer layers on biaxially textured metal substrates

    DOEpatents

    Beach, David B.; Morrell, Jonathan S.; Paranthaman, Mariappan; Chirayil, Thomas; Specht, Eliot D.; Goyal, Amit

    2002-08-27

    A laminate article comprises a substrate and a biaxially textured (RE.sup.1.sub.x RE.sup.2.sub.(1-x)).sub.2 O.sub.3 buffer layer over the substrate, wherein 0buffer layer can be deposited using sol-gel or metal-organic decomposition. The laminate article can include a layer of YBCO over the (RE.sup.1.sub.x RE.sup.2.sub.(1-x)).sub.2 O.sub.3 buffer layer. A layer of CeO.sub.2 between the YBCO layer and the (RE.sup.1.sub.x RE.sup.2.sub.(1-x)).sub.2 O.sub.3 buffer can also be include. Further included can be a layer of YSZ between the CeO.sub.2 layer and the (RE.sup.1.sub.x RE.sup.2.sub.(1-x)).sub.2 O.sub.3 buffer layer. The substrate can be a biaxially textured metal, such as nickel. A method of forming the laminate article is also disclosed.

  2. Characterization of AlInN/AlN/GaN Heterostructures with Different AlN Buffer Thickness

    NASA Astrophysics Data System (ADS)

    Çörekçi, S.; Dugan, S.; Öztürk, M. K.; Çetin, S. Ş.; Çakmak, M.; Özçelik, S.; Özbay, E.

    2016-07-01

    Two AlInN/AlN/GaN heterostructures with 280-nm- and 400-nm-thick AlN buffer grown on sapphire substrates by metal-organic chemical vapor deposition (MOCVD) have been investigated by x-ray diffraction (XRD), atomic force microscopy (AFM), photoluminescence (PL) and Hall-effect measurements. The symmetric (0002) plane with respect to the asymmetric (10bar{1}2) plane in the 280-nm-thick AlN buffer has a higher crystal quality, as opposed to the 400-nm-thick buffer. The thinner buffer improves the crystallinity of both (0002) and (10bar{1}2) planes in the GaN layers, it also provides a sizeable reduction in dislocation density of GaN. Furthermore, the lower buffer thickness leads to a good quality surface with an rms roughness of 0.30 nm and a dark spot density of 4.0 × 108 cm-2. The optical and transport properties of the AlInN/AlN/GaN structure with the relatively thin buffer are compatible with the enhancement in its structural quality, as verified by XRD and AFM results.

  3. Buffer layers on metal alloy substrates for superconducting tapes

    DOEpatents

    Jia, Quanxi; Foltyn, Stephen R.; Arendt, Paul N.; Groves, James R.

    2004-06-29

    An article including a substrate, a layer of an inert oxide material upon the surface of the substrate, a layer of an amorphous oxide or oxynitride material upon the inert oxide material layer, a layer of an oriented cubic oxide material having a rock-salt-like structure upon the amorphous oxide material layer, and a layer of a SrRuO.sub.3 buffer material upon the oriented cubic oxide material layer is provided together with additional layers such as a HTS top-layer of YBCO directly upon the layer of a SrRuO.sub.3 buffer material layer. With a HTS top-layer of YBCO upon at least one layer of the SrRuO.sub.3 buffer material in such an article, J.sub.c 's of up to 1.3.times.10.sup.6 A/cm.sup.2 have been demonstrated with projected IC's of over 200 Amperes across a sample 1 cm wide.

  4. Conductive and robust nitride buffer layers on biaxially textured substrates

    DOEpatents

    Sankar, Sambasivan; Goyal, Amit; Barnett, Scott A.; Kim, Ilwon; Kroeger, Donald M.

    2004-08-31

    The present invention relates to epitaxial, electrically conducting and mechanically robust, cubic nitride buffer layers deposited epitaxially on biaxially textured substrates such as metal and alloys. The invention comprises of a biaxially textured substrate with epitaxial layers of nitrides. The invention also discloses a method to form such epitaxial layers using a high rate deposition method as well as without the use of forming gases. The invention further comprises epitaxial layers of oxides on the biaxially textured nitride layers. In some embodiments the article further comprises electromagnetic devices which may be super conducting properties.

  5. Conductive and robust nitride buffer layers on biaxially textured substrates

    DOEpatents

    Sankar, Sambasivan [Chicago, IL; Goyal, Amit [Knoxville, TN; Barnett, Scott A [Evanston, IL; Kim, Ilwon [Skokie, IL; Kroeger, Donald M [Knoxville, TN

    2009-03-31

    The present invention relates to epitaxial, electrically conducting and mechanically robust, cubic nitride buffer layers deposited epitaxially on biaxially textured substrates such as metals and alloys. The invention comprises of a biaxially textured substrate with epitaxial layers of nitrides. The invention also discloses a method to form such epitaxial layers using a high rate deposition method as well as without the use of forming gases. The invention further comprises epitaxial layers of oxides on the biaxially textured nitride layer. In some embodiments the article further comprises electromagnetic devices which may have superconducting properties.

  6. Thickness-Dependent Properties of YBCO Films Grown on GZO/CLO-Buffered NiW Substrates

    NASA Astrophysics Data System (ADS)

    Malmivirta, M.; Huhtinen, H.; Zhao, Y.; Grivel, J.-C.; Paturi, P.

    2016-07-01

    To study the role of novel Gd_2 Zr_2 O_7 /Ce_{0.9} La_{0.1} O_2 buffer layer structure on a biaxially textured NiW substrate, a set of YBa_2 Cu_3 O_{7-δ } (YBCO) films with different thicknesses were prepared by pulsed laser deposition (PLD). Interface imperfections as well as thickness-dependent structural properties were observed in the YBCO thin films. The structure is also reflected into the improved superconducting properties with the highest critical current densities in films with intermediate thicknesses. Therefore, it can be concluded that the existing buffer layers need more optimization before they can be successfully used for films with various thicknesses. This issue is linked to the extremely susceptible growth method of PLD when compared to the commonly used chemical deposition methods. Nevertheless, PLD-grown films can give a hint on what to concentrate to be able to further improve the buffer layer structures for future coated conductor technologies.

  7. Substrate-induced magnetism in epitaxial graphene buffer layers.

    PubMed

    Ramasubramaniam, A; Medhekar, N V; Shenoy, V B

    2009-07-01

    Magnetism in graphene is of fundamental as well as technological interest, with potential applications in molecular magnets and spintronic devices. While defects and/or adsorbates in freestanding graphene nanoribbons and graphene sheets have been shown to cause itinerant magnetism, controlling the density and distribution of defects and adsorbates is in general difficult. We show from first principles calculations that graphene buffer layers on SiC(0001) can also show intrinsic magnetism. The formation of graphene-substrate chemical bonds disrupts the graphene pi-bonds and causes localization of graphene states near the Fermi level. Exchange interactions between these states lead to itinerant magnetism in the graphene buffer layer. We demonstrate the occurrence of magnetism in graphene buffer layers on both bulk-terminated as well as more realistic adatom-terminated SiC(0001) surfaces. Our calculations show that adatom density has a profound effect on the spin distribution in the graphene buffer layer, thereby providing a means of engineering magnetism in epitaxial graphene.

  8. Optimization of CdS Buffer Layer for High Efficiency CIGS Solar Cells.

    PubMed

    Kim, Donguk; Jang, Yong-Jun; Jung, Ho-Sung; Kim, Minha; Baek, Dohyun; Yi, Junsin; Lee, Jaehyeong; Choi, Youngkwan

    2016-05-01

    In present work, effects of the thickness on the structural and optical properties of chemically deposited CdS thin films were investigated. In addition, we fabricated Cu(In, Ga)Se2 solar cells with various thicknesses of CdS buffer layer and optimized the thickness for a high efficiency. When the CdS thin films were thicker, the crystallinity improved but the transmittance decreased. The short-circuit current density (J(sc)) and the fill factor are the major efficiency limiting factors for the CIGS solar cells. As the thickness of the CdS buffer layer, the open-circuit voltage (V(oc)) and the fill factor increased, whereas the J(sc) slightly decreased. The improvement of the fill factor and thus efficiency resulted from larger shunt resistance. For the solar cells without a high resistive intrinsic ZnO layer, the highest efficiency was acquired at the thickness of 89 nm. With further increasing the thickness, the J(sc) decreased significantly, resulting in poor efficiency. PMID:27483874

  9. Effect of ZnO seed layer on the morphology and optical properties of ZnO nanorods grown on GaN buffer layers

    SciTech Connect

    Nandi, R. Mohan, S. Major, S. S.; Srinivasa, R. S.

    2014-04-24

    ZnO nanorods were grown by chemical bath deposition on sputtered, polycrystalline GaN buffer layers with and without ZnO seed layer. Scanning electron microscopy and X-ray diffraction show that the ZnO nanorods on GaN buffer layers are not vertically well aligned. Photoluminescence spectrum of ZnO nanorods grown on GaN buffer layer, however exhibits a much stronger near-band-edge emission and negligible defect emission, compared to the nanorods grown on ZnO buffer layer. These features are attributed to gallium incorporation at the ZnO-GaN interface. The introduction of a thin (25 nm) ZnO seed layer on GaN buffer layer significantly improves the morphology and vertical alignment of ZnO-NRs without sacrificing the high optical quality of ZnO nanorods on GaN buffer layer. The presence of a thick (200 nm) ZnO seed layer completely masks the effect of the underlying GaN buffer layer on the morphology and optical properties of nanorods.

  10. Formation of CeO 2 buffer layer using multi-plume PLD

    NASA Astrophysics Data System (ADS)

    Sutoh, Y.; Nakaoka, K.; Miura, M.; Matsuda, J.; Nakanishi, T.; Nakai, A.; Yoshizumi, M.; Izumi, T.; Miyata, S.; Iijima, Y.; Yamada, Y.; Shiohara, Y.; Saitoh, T.

    2008-09-01

    The CeO 2 buffer layer was fabricated using the multi-plume pulsed laser deposition (PLD) method with different deposition rates controlled by the excimer laser energy and frequency on the Gd 2Zr 2O 7 template tape formed by the ion-beam assisted deposition (IBAD) with 14° of Δ φ (full width at half maximum (FWHM) value of X-ray diffraction φ-scan for Gd 2Zr 2O 7 (2 2 2) pole). The laser conditions with high pulse energy and low frequency resulted in a highly textured in-plane grain alignment (Δ φ). The surface roughness and Δ φ values were improved by increasing the thickness of the CeO 2 buffer layer. YBCO films with the thickness of 1 μm and 1.6 μm were further deposited by the advanced trifluoroacetates-metal organic deposition (TFA-MOD) on the CeO 2 buffered substrates with the deposition rate of 0.15 and 0.5 μm/min. The Jc values of 2.5 MA/cm 2 and 2 MA/cm 2 were obtained, respectively. High Jc films could be deposited on the CeO 2 buffer layer even at high deposition rate by the multi-plume deposition.

  11. Enhanced dielectric properties from barium strontium titanate films with strontium titanate buffer layers

    NASA Astrophysics Data System (ADS)

    Cole, M. W.; Ngo, E.; Hubbard, C.; Hirsch, S. G.; Ivill, M.; Sarney, W. L.; Zhang, J.; Alpay, S. P.

    2013-10-01

    In order to enhance the permittivity and tunability of the dielectric component, a thin film dielectric composite consisting of a radio frequency sputtered SrTiO3 (STO) buffer layer and metalorganic solution deposited Mg-doped BaxSr1-xTiO3 (Mg-BST) thin film overgrowth was developed using affordable industry standard processes and materials. The effect of the STO buffer layer thickness on the dielectric response of the heterostructure was investigated. Our results demonstrate that the composite film heterostructure, evaluated in the metal-insulator-metal configuration Pt/STO/Mg-BST/Pt on sapphire substrate, with the thinner (9-17 nm) STO buffer layers possessed enhanced permittivity (ɛr ˜ 491) with respect to the thicker 41 nm buffer layer (ɛr ˜ 360) and that of a control Mg-BST film without a STO buffer layer (ɛr ˜ 380). Additionally, the composite film with the thinner buffer layers were shown to have low losses (tan δ ˜ 0.02), low leakage characteristics (J = 7.0 × 10-9 A/cm2), high breakdown voltage (VBR > 10 V), a large grain microstructure (˜125 nm), and smooth pin-hole free surfaces. The enhanced permittivity of the composite dielectric film resulted from three major factors: (i) the template-effect of the thin STO buffer layer on the thicker Mg-BST over-layer film to achieve a large grain microstructure, (ii) the low viscosity of the metallo-organic solution deposition (MOSD) solution, which ensured heterogeneous nucleation of the Mg-BST overgrowth film on the surface of the STO buffer layer, and (iii) minimization of the low permittivity grain boundary phase (TiO2-x phase). The dielectric response of the BST can be explained using a thermodynamic model taking into account interlayer electrostatic and electromechanical interactions. Additionally, Mg doping of the BST enabled low loss and low leakage characteristics of the heterostructure. The large permittivity, low loss, low leakage characteristics, and defect free surfaces of the composite

  12. Surface Roughness and Dislocation Distribution in Compositionally Graded Relaxed SiGe Buffer Layer with Inserted Strained Si Layers

    NASA Astrophysics Data System (ADS)

    Yoon, Tae-Sik

    2005-03-01

    We report the experimental investigation of surface roughness and dislocation distribution of 1 μm-thick, compositionally graded, relaxed SiGe buffer layer with a final Ge surface content of 30%. Tensile-strained Si layers are inserted at various locations in the graded buffer during SiGe epitaxial growths. Slight reduction in surface roughness from about 10.3 nm to about 7.8 nm by inserting two 20 nm thick tensile-strained Si layers followed by SiGe growths. It turns out that majority of the residual surface roughness is developed during the SiGe growths on top of the topmost strain Si layer. The surface immediately after the growth of tensile strained Si is very flat with about 1.1 nm RMS roughness and without crosshatch morphology. Cross-sectional TEM shows clear signs of increased interaction between dislocation half-loops at the top surface of the strained Si layers. Our observation shows that although thin Si layers under tensile-strain are effective in reducing cross-hatch, they could in the meantime impede dislocation propagation leading to higher threading dislocation density. Considerations for an optimized scheme exploiting the flattening function of tensile-strained layers will be discussed.

  13. Advanced titania buffer layer architectures prepared by chemical solution deposition

    NASA Astrophysics Data System (ADS)

    Kunert, J.; Bäcker, M.; Brunkahl, O.; Wesolowski, D.; Edney, C.; Clem, P.; Thomas, N.; Liersch, A.

    2011-08-01

    Chemical solution deposition (CSD) was used to grow high-quality (100) oriented films of SrTiO3 (STO) on CSD CaTiO3 (CTO), Ba0.1Ca0.9TiO3 (BCT) and STO seed and template layers. These template films bridge the lattice misfit between STO and the nickel-tungsten (NiW) substrate, assisting in dense growth of textured STO. Additional niobium (Nb) doping of the STO buffer layer reduces oxygen diffusion which is necessary to avoid undesired oxidation of the NiW. The investigated templates offer suitable alternatives to established standard buffer systems like La2Zr2O7 (LZO) and CeO2 for coated conductors.

  14. Non-polar a-plane ZnO films grown on r-Al2O3 substrates using GaN buffer layers

    NASA Astrophysics Data System (ADS)

    Xu, C. X.; Chen, W.; Pan, X. H.; Chen, S. S.; Ye, Z. Z.; Huang, J. Y.

    2016-09-01

    In this work, GaN buffer layer has been used to grow non-polar a-plane ZnO films by laser-assisted and plasma-assisted molecular beam epitaxy. The thickness of GaN buffer layer ranges from ∼3 to 12 nm. The GaN buffer thickness effect on the properties of a-plane ZnO thin films is carefully investigated. The results show that the surface morphology, crystal quality and optical properties of a-plane ZnO films are strongly correlated with the thickness of GaN buffer layer. It was found that with 6 nm GaN buffer layer, a-plane ZnO films display the best crystal quality with X-ray diffraction rocking curve full-width at half-maximum of only 161 arcsec for the (101) reflection.

  15. Improved nonlinear slot waveguides using dielectric buffer layers: properties of TM waves.

    PubMed

    Elsawy, Mahmoud M R; Renversez, Gilles

    2016-04-01

    We propose an improved version of the symmetric metal slot waveguides with a Kerr-type nonlinear dielectric core adding linear dielectric buffer layers between the metal regions and the core. Using a finite element method to compute the stationary nonlinear modes, we provide the full phase diagrams of its main transverse magnetic modes as a function of the total power, buffer layer, and core thicknesses that are more complex than the ones of the simple nonlinear metal slot. We show that these modes can exhibit spatial transitions toward specific modes of the new structure as a function of power. We also demonstrate that, for the main modes, the losses are reduced compared to the previous structures, and that they can now decrease with power. Finally, we describe the stability properties of the main stationary solutions using nonlinear FDTD simulations. PMID:27192282

  16. Buffer influence on magnetic dead layer, critical current, and thermal stability in magnetic tunnel junctions with perpendicular magnetic anisotropy

    NASA Astrophysics Data System (ADS)

    Frankowski, Marek; Żywczak, Antoni; Czapkiewicz, Maciej; Zietek, Sławomir; Kanak, Jarosław; Banasik, Monika; Powroźnik, Wiesław; Skowroński, Witold; Checiński, Jakub; Wrona, Jerzy; Głowiński, Hubert; Dubowik, Janusz; Ansermet, Jean-Philippe; Stobiecki, Tomasz

    2015-06-01

    We present a detailed study of Ta/Ru-based buffers and their influence on features crucial from the point of view of applications of Magnetic Tunnel Junctions (MTJs) such as critical switching current and thermal stability. We study buffer/FeCoB/MgO/Ta/Ru and buffer/MgO/FeCoB/Ta/Ru layers, investigating the crystallographic texture, the roughness of the buffers, the magnetic domain pattern, the magnetic dead layer thickness, and the perpendicular magnetic anisotropy fields for each sample. Additionally, we examine the effect of the current induced magnetization switching for complete nanopillar MTJs with lateral dimensions of 270 × 180 nm. Buffer Ta 5/Ru 10/Ta 3 (thicknesses in nm), which has the thickest dead layer, exhibits a much larger thermal stability factor (63 compared to 32.5) while featuring a slightly lower critical current density value (1.25 MA/cm2 compared to 1.5 MA/cm2) than the buffer with the thinnest dead layer Ta 5/Ru 20/Ta 5. We can account for these results by considering the difference in damping which compensates for the difference in the switching barrier heights.

  17. Structural and electrical properties of reactively sputtered InN thin films on AlN-buffered (00.1) sapphire substrates: Dependence on buffer and film growth temperatures and thicknesses

    NASA Astrophysics Data System (ADS)

    Kistenmacher, T. J.; Ecelberger, S. A.; Bryden, W. A.

    1993-08-01

    An extensive investigation of InN overlayers on AlN-buffered (00.1) sapphire by reactive magnetron sputtering has been undertaken and the dependencies of several basic materials properties (film thickness, development and quality of heteroepitaxy, film morphology, and electrical transport) on such key deposition parameters such as the growth temperatures of the insulating AlN buffer layer and the InN overlayer and their thicknesses have been determined. Three prominent effects of the AlN buffer layer are (1) the stabilization of heteroepitaxial growth over a broad range of film and buffer layer growth temperatures; (2) the attainment of a higher Hall mobility (up to 60 cm2/V s) over much of the same range; and, (3) the retention of heteroepitaxial growth, higher Hall mobility, and pseudo-two-dimensional growth even in the limit of an InN layer of ˜40 Å. In the context of a structure-zone model, the AlN buffer layer is projected to effectively raise the growth temperature of the InN thin film. The increase in effective growth temperature is, however, insufficient to overcome low atomic and cluster mobility and to achieve single-crystal InN thin film growth.

  18. Effect of Alloy 625 Buffer Layer on Hardfacing of Modified 9Cr-1Mo Steel Using Nickel Base Hardfacing Alloy

    NASA Astrophysics Data System (ADS)

    Chakraborty, Gopa; Das, C. R.; Albert, S. K.; Bhaduri, A. K.; Murugesan, S.; Dasgupta, Arup

    2016-04-01

    Dashpot piston, made up of modified 9Cr-1Mo steel, is a part of diverse safety rod used for safe shutdown of a nuclear reactor. This component was hardfaced using nickel base AWS ER NiCr-B alloy and extensive cracking was experienced during direct deposition of this alloy on dashpot piston. Cracking reduced considerably and the component was successfully hardfaced by application of Inconel 625 as buffer layer prior to hardface deposition. Hence, a separate study was undertaken to investigate the role of buffer layer in reducing the cracking and on the microstructure of the hardfaced deposit. Results indicate that in the direct deposition of hardfacing alloy on modified 9Cr-1Mo steel, both heat-affected zone (HAZ) formed and the deposit layer are hard making the thickness of the hard layer formed equal to combined thickness of both HAZ and deposit. This hard layer is unable to absorb thermal stresses resulting in the cracking of the deposit. By providing a buffer layer of Alloy 625 followed by a post-weld heat treatment, HAZ formed in the modified 9Cr-1Mo steel is effectively tempered, and HAZ formed during the subsequent deposition of the hardfacing alloy over the Alloy 625 buffer layer is almost completely confined to Alloy 625, which does not harden. This reduces the cracking susceptibility of the deposit. Further, unlike in the case of direct deposition on modified 9Cr-1Mo steel, dilution of the deposit by Ni-base buffer layer does not alter the hardness of the deposit and desired hardness on the deposit surface could be achieved even with lower thickness of the deposit. This gives an option for reducing the recommended thickness of the deposit, which can also reduce the risk of cracking.

  19. Investigation of hole injection enhancement by MoO{sub 3} buffer layer in organic light emitting diodes

    SciTech Connect

    Haitao, Xu; Xiang, Zhou

    2013-12-28

    An MoO{sub 3} buffer layer prepared by thermal evaporation as hole injection layer was investigated in organic light emitting diodes. The MoO{sub 3} film inserted between the anode and hole transport layer decreased the operating voltage and enhanced power efficiency. Introduction of 1 nm MoO{sub 3} film, which was found to be the optimum layer thickness, resulted in 45% increase in efficiency compared with traditional ITO anode. Results from atomic force microscopy and photoemission spectroscopy showed that smooth surface morphology and suitable energy level alignment of ITO/MoO{sub 3} interface facilitated hole injection and transport. The hole injection and transport mechanism at the ITO/MoO{sub 3} interface in thin and thick buffer layers were analyzed.

  20. Buffer layers on rolled nickel or copper as superconductor substrates

    DOEpatents

    Paranthaman, Mariappan; Lee, Dominic F.; Kroeger, Donald M.; Goyal, Amit

    2000-01-01

    Buffer layer architectures are epitaxially deposited on biaxially-textured rolled substrates of nickel and/or copper and their alloys for high current conductors, and more particularly buffer layer architectures such as Y.sub.2 O.sub.3 /Ni, YSZ/Y.sub.2 O.sub.3 /Ni, Yb.sub.2 O.sub.3 /Ni, Yb.sub.2 O.sub.3 /Y.sub.2 O.sub.3 /Ni, Yb.sub.2 O.sub.3 /CeO.sub.2 /Ni, RE.sub.2 O.sub.3 /Ni (RE=Rare Earth), and Yb.sub.2 O.sub.3 /YSZ/CeO.sub.2 /Ni, Y.sub.2 O.sub.3 /Cu, YSZ/Y.sub.2 O.sub.3 /Cu, Yb.sub.2 O.sub.3 /Cu, Yb.sub.2 O.sub.3 /Y.sub.2 O.sub.3 /Cu, Yb.sub.2 O.sub.3 /CeO.sub.2 /Cu, RE.sub.2 O.sub.3 /Cu, and Yb.sub.2 O.sub.3 /YSZ/CeO.sub.2 /Cu. Deposition methods include physical vapor deposition techniques which include electron-beam evaporation, rf magnetron sputtering, pulsed laser deposition, thermal evaporation, and solution precursor approach, which includes chemical vapor deposition, combustion CVD, metal-organic decomposition, sol-gel processing, and plasma spray.

  1. Doped Y.sub.2O.sub.3 buffer layers for laminated conductors

    DOEpatents

    Paranthaman, Mariappan Parans [Knoxville, TN; Schoop, Urs [Westborough, MA; Goyal, Amit [Knoxville, TN; Thieme, Cornelis Leo Hans [Westborough, MA; Verebelyi, Darren T [Oxford, MA; Rupich, Martin W [Framingham, MA

    2007-08-21

    A laminated conductor includes a metallic substrate having a surface, a biaxially textured buffer layer supported by the surface of the metallic substrate, the biaxially textured buffer layer comprising Y.sub.2O.sub.3 and a dopant for blocking cation diffusion through the Y.sub.2O.sub.3, and a biaxially textured conductor layer supported by the biaxially textured buffer layer.

  2. Improvement of the interfacial Dzyaloshinskii-Moriya interaction by introducing a Ta buffer layer

    SciTech Connect

    Kim, Nam-Hui; Jung, Jinyong; Cho, Jaehun; You, Chun-Yeol; Han, Dong-Soo; Kim, June-Seo Swagten, Henk J. M.

    2015-10-05

    We report systematic measurements of the interfacial Dzyaloshinskii-Moriya interaction (iDMI) by employing Brillouin light scattering in Pt/Co/AlO{sub x} and Ta/Pt/Co/AlO{sub x} structures. By introducing a tantalum buffer layer, the saturation magnetization and the interfacial perpendicular magnetic anisotropy are significantly improved due to the better interface between heavy metal and ferromagnetic layer. From the frequency shift between Stokes- and anti-Stokes spin-waves, we successively obtain considerably larger iDM energy densities (D{sub max} = 1.65 ± 0.13 mJ/m{sup 2} at t{sub Co} = 1.35 nm) upon adding the Ta buffer layer, despite the nominally identical interface materials. Moreover, the energy density shows an inverse proportionality with the Co layer thickness, which is the critical clue that the observed iDMI is indeed originating from the interface between the Pt and Co layers.

  3. Effect of Reaction Temperature of CdS Buffer Layers by Chemical Bath Deposition Method.

    PubMed

    Kim, Hye Jin; Kim, Chae-Woong; Jung, Duk Young; Jeong, Chaehwan

    2016-05-01

    This study investigated CdS deposition on a Cu(In,Ga)Se2 (CIGS) film via chemical bath deposition (CBD) in order to obtain a high-quality optimized buffer layer. The thickness and reaction temperature (from 50 degrees C to 65 degrees C) were investigated, and we found that an increase in the reaction temperature during CBD, resulted in a thicker CdS layer. We obtained a thin film with a thickness of 50 nm at a reaction temperature of 60 degrees C, which also exhibited the highest photoelectric conversion efficiency for use in solar cells. Room temperature time-resolved photoluminescence (TR-PL) measurements were performed on the Cu(In,Ga)Se2 (CIGS) thin film and CdS/CIGS samples to determine the recombination process of the photo-generated minority carrier. The device performance was found to be dependent on the thickness of the CdS layer. As the thickness of the CdS increases, the fill factor and the series resistance increased to 61.66% and decreased to 8.35 Ω, respectively. The best condition was observed at a reaction temperature of 60 degrees C, and its conversion efficiency was 12.20%.

  4. Effect of Reaction Temperature of CdS Buffer Layers by Chemical Bath Deposition Method.

    PubMed

    Kim, Hye Jin; Kim, Chae-Woong; Jung, Duk Young; Jeong, Chaehwan

    2016-05-01

    This study investigated CdS deposition on a Cu(In,Ga)Se2 (CIGS) film via chemical bath deposition (CBD) in order to obtain a high-quality optimized buffer layer. The thickness and reaction temperature (from 50 degrees C to 65 degrees C) were investigated, and we found that an increase in the reaction temperature during CBD, resulted in a thicker CdS layer. We obtained a thin film with a thickness of 50 nm at a reaction temperature of 60 degrees C, which also exhibited the highest photoelectric conversion efficiency for use in solar cells. Room temperature time-resolved photoluminescence (TR-PL) measurements were performed on the Cu(In,Ga)Se2 (CIGS) thin film and CdS/CIGS samples to determine the recombination process of the photo-generated minority carrier. The device performance was found to be dependent on the thickness of the CdS layer. As the thickness of the CdS increases, the fill factor and the series resistance increased to 61.66% and decreased to 8.35 Ω, respectively. The best condition was observed at a reaction temperature of 60 degrees C, and its conversion efficiency was 12.20%. PMID:27483883

  5. Superconducting composite with multilayer patterns and multiple buffer layers

    DOEpatents

    Wu, X.D.; Muenchausen, R.E.

    1993-10-12

    An article of manufacture is described including a substrate, a patterned interlayer of a material selected from the group consisting of magnesium oxide, barium-titanium oxide or barium-zirconium oxide, the patterned interlayer material overcoated with a secondary interlayer material of yttria-stabilized zirconia or magnesium-aluminum oxide, upon the surface of the substrate whereby an intermediate article with an exposed surface of both the overcoated patterned interlayer and the substrate is formed, a coating of a buffer layer selected from the group consisting of cerium oxide, yttrium oxide, curium oxide, dysprosium oxide, erbium oxide, europium oxide, iron oxide, gadolinium oxide, holmium oxide, indium oxide, lanthanum oxide, manganese oxide, lutetium oxide, neodymium oxide, praseodymium oxide, plutonium oxide, samarium oxide, terbium oxide, thallium oxide, thulium oxide, yttrium oxide and ytterbium oxide over the entire exposed surface of the intermediate article, and, a ceramic superconductor. 5 figures.

  6. Reducing interface recombination for Cu(In,Ga)Se{sub 2} by atomic layer deposited buffer layers

    SciTech Connect

    Hultqvist, Adam; Bent, Stacey F.; Li, Jian V.; Kuciauskas, Darius; Dippo, Patricia; Contreras, Miguel A.; Levi, Dean H.

    2015-07-20

    Partial CuInGaSe{sub 2} (CIGS) solar cell stacks with different atomic layer deposited buffer layers and pretreatments were analyzed by photoluminescence (PL) and capacitance voltage (CV) measurements to investigate the buffer layer/CIGS interface. Atomic layer deposited ZnS, ZnO, and SnO{sub x} buffer layers were compared with chemical bath deposited CdS buffer layers. Band bending, charge density, and interface state density were extracted from the CV measurement using an analysis technique new to CIGS. The surface recombination velocity calculated from the density of interface traps for a ZnS/CIGS stack shows a remarkably low value of 810 cm/s, approaching the range of single crystalline II–VI systems. Both the PL spectra and its lifetime depend on the buffer layer; thus, these measurements are not only sensitive to the absorber but also to the absorber/buffer layer system. Pretreatment of the CIGS prior to the buffer layer deposition plays a significant role on the electrical properties for the same buffer layer/CIGS stack, further illuminating the importance of good interface formation. Finally, ZnS is found to be the best performing buffer layer in this study, especially if the CIGS surface is pretreated with potassium cyanide.

  7. Lattice-matched HfN buffer layers for epitaxy of GaN on Si

    SciTech Connect

    Armitage, Robert; Yang, Qing; Feick, Henning; Gebauer, Joerg; Weber, Eicke R.; Shinkai, Satoko; Sasaki, Katsutaka

    2002-05-08

    Gallium nitride is grown by plasma-assisted molecular-beam epitaxy on (111) and (001) silicon substrates using sputter-deposited hafnium nitride buffer layers. Wurtzite GaN epitaxial layers are obtained on both the (111) and (001) HfN/Si surfaces, with crack-free thickness up to 1.2 (mu)m. Initial results for GaN grown on the (111) surface show a photoluminescence peak width of 17 meV at 11 K, and an asymmetric x-ray rocking curve width of 20 arcmin. Wurtzite GaN on HfN/Si(001) shows reduced structural quality and peculiar low-temperature luminescence features. However, growth on the (001) surface results in nearly stress-free films, suggesting that much thicker crack-free layers could be obtained.

  8. Development of Solution Buffer Layers for RABiTS Based YBCO Coated Conductors

    SciTech Connect

    Paranthaman, Mariappan Parans; Qiu, Xiaofeng; Kim, Kyunghoon; Shi, D.; Zhang, Yifei; Li, Xiaoping; Sathyamurthy, Srivatsan; Thieme, C. L. H.; Rupich, M. W.

    2010-01-01

    The main objective of this research is to find a suitable alternate solution based seed layer for the standard RABiTS three-layer architecture of physical vapor deposited CeO2 cap/YSZ barrier/Y2O3 seed on Ni-5%W metal tape. In the present work, we have identified CeO2 buffer layer as a potential replacement for Y2O3 seeds. Using a metal-organic deposition (MOD) process, we have grown smooth, crack-free, epitaxial thin films of CeO2 (both pure and Zr, Cu and Gd-doped) directly on biaxially textured Ni-5W substrates in short lengths. Detailed XRD studies indicate that a single epitaxial CeO2 phase with slightly improved out-of-plane texture compared to the texture of underlying Ni-W substrates can be achieved in pure, undoped CeO2 samples. We have also demonstrated the growth of YSZ barrier layers on pure CeO2 seeds using sputtering. Both sputtered CeO2 cap layers and MOD-YBCO films were grown epitaxially on these YSZ-buffered MOD-CeO2/Ni-5W substrates. High critical currents per unit width, Ic of 264 A/cm (critical current density, Jc of 3.3 MA/cm2) at 77 K and 0.01 T was achieved for 0.8 m thick MOD-YBCO films grown on MOD-CeO2 seeds. These results indicate that CeO2 films can be grown directly on Ni-5W substrates and still support high performance YBCO coated conductors. This work holds promise for a route for producing low-cost buffer architecture for RABiTS based YBCO coated conductors.

  9. Development of Solution Buffer Layers for RABiTS Based YBCO Coated Conductors

    SciTech Connect

    Paranthaman, Mariappan Parans; Qiu, Xiaofeng; List III, Frederick Alyious; Zhang, Yifei; Li, Xiaoping; Sathyamurthy, Srivatsan; Thieme, C. L. H.; Rupich, M. W.

    2011-01-01

    Abstract The main objective of this research is to find a suitable alternate solution based seed layer for the standard RABiTS three-layer architecture of physical vapor deposited CeO cap/YSZ barrier/Y O seed on Ni-5%W metal tape. In the present work, we have identified CeO buffer layer as a potential replacement for Y O seeds. Using a metal-organic deposition (MOD) process, we have grown smooth, crack-free, epitaxial thin films of CeO (pure and Zr, Cu and Gd-doped) directly on biaxially textured Ni-5W substrates in short lengths. Detailed XRD studies indicate that a single epitaxial CeO phase with slightly improved out-of-plane texture compared to the texture of the underlying Ni-W substrates can be achieved in pure, undoped CeO samples. We have also demonstrated the growth of YSZ barrier layers on pure CeO seeds using sputtering. Both sputtered CeO cap layers and MOD-YBCO films were grown epitaxially on these YSZ-buffered MOD-CeO /Ni-5W substrates. High critical currents per unit width, of 264 A/cm (critical current density, of 3.3 MA/cm ) at 77 K and 0.01 T was achieved for 0.8 m thick MOD-YBCO films grown on MOD-CeO seeds. These results indicate that CeO films can be grown directly on Ni-5W substrates and still support high performance YBCO coated conductors. This work holds promise for a route for producing low-cost buffer architecture for RABiTS based YBCO coated conductors.

  10. Improvement of CIGS thin-film solar cell performance by optimization of Zn(O,S) buffer layer parameters

    NASA Astrophysics Data System (ADS)

    Sharbati, Samaneh; Keshmiri, Sayyed Hossein; McGoffin, J. Tyler; Geisthardt, Russell

    2015-03-01

    The effects of Zn(O,S) buffer layer parameters on CuInGaSe (CIGS) cell performance are investigated using a physically based solar cell model. The key issue for CIGS solar cells is to remove destructive effects like pinholes due to thinning buffer layer. Choosing Zn(O,S) instead of CdS as the buffer layer provides the benefit of more transmission. The current difference between cells with CdS and Zn(O,S) buffer layers is more obvious in thicker films. Three main properties were investigated: buffer layer thickness, doping density, and oxygen content. The cell performance is investigated as multiple parameters are varied simultaneously. The effects of all physical parameters of Zn(O,S) are dependent on each other, so that by increasing Zn(O,S) carrier concentration from 1018 to 1020 cm-3, the optimum oxygen content range to have maximum efficiency will be expanded from 50-75 to 30-90 %.

  11. Buffer layers for deposition of superconducting YBaCuO thin film on polycrystalline diamond

    NASA Astrophysics Data System (ADS)

    Beetz, Charles P.; Cui, G. J.; Lincoln, B. A.; Kirlin, Peter S.

    1992-09-01

    In an attempt to combine the properties of high temperature superconductors with the high thermal conductivity and low specific heat of diamond, we have explored the deposition of in- situ YBa(subscript 2)Cu(subscript 3)O(subscript 7-(delta) ) (YBCO) superconducting films on polycrystalline diamond thin films. We demonstrate for the first time superconducting YBCO films on diamond employing multiple layer buffer layer systems. Three different composite buffer layer systems were explored for this purpose: (1) Diamond/Zr/YSZ/YBCO, (2) Diamond/Si(subscript 3)N(subscript 4)/YSZ/YBCO, and (3) Diamond/SiO(subscript 2)/YSZ/YBCO. Adherent thin Zr films were deposited by dc sputtering on the diamond films at 450 to 820 degree(s)C. The yttria stabilized zirconia (YSZ) was deposited by reactive RF sputtering at 680 to 750 degree(s)C. The Si(subscript 3)N(subscript 4) and SiO(subscript 2) were also deposited by on-axis RF sputtering at 400 to 700 degree(s)C. YBCO films were grown on the buffer layers by off-axis RF sputtering at substrate temperatures between 690 degree(s)C and 750 degree(s)C. In all cases, the as-deposited YBCO films were superconducting above 77 K. This demonstration enables the fabrication of low heat capacity, fast response time bolometric far IR detectors and paves the way for the use of HTSC as a high frequency interconnect metallization on thick diamond film based multichip modules.

  12. Superconducting composite with multilayer patterns and multiple buffer layers

    DOEpatents

    Wu, Xin D.; Muenchausen, Ross E.

    1993-01-01

    An article of manufacture including a substrate, a patterned interlayer of a material selected from the group consisting of magnesium oxide, barium-titanium oxide or barium-zirconium oxide, the patterned interlayer material overcoated with a secondary interlayer material of yttria-stabilized zirconia or magnesium-aluminum oxide, upon the surface of the substrate whereby an intermediate article with an exposed surface of both the overcoated patterned interlayer and the substrate is formed, a coating of a buffer layer selected from the group consisting of cerium oxide, yttrium oxide, curium oxide, dysprosium oxide, erbium oxide, europium oxide, iron oxide, gadolinium oxide, holmium oxide, indium oxide, lanthanum oxide, manganese oxide, lutetium oxide, neodymium oxide, praseodymium oxide, plutonium oxide, samarium oxide, terbium oxide, thallium oxide, thulium oxide, yttrium oxide and ytterbium oxide over the entire exposed surface of the intermediate article, and, a ceramic superco n FIELD OF THE INVENTION The present invention relates to the field of superconducting articles having two distinct regions of superconductive material with differing in-plane orientations whereby the conductivity across the boundary between the two regions can be tailored. This invention is the result of a contract with the Department of Energy (Contract No. W-7405-ENG-36).

  13. Enhancement of perpendicular magnetic anisotropy and coercivity in ultrathin Ru/Co/Ru films through the buffer layer engineering

    NASA Astrophysics Data System (ADS)

    Kolesnikov, Alexander G.; Stebliy, Maxim E.; Ognev, Alexey V.; Samardak, Alexander S.; Fedorets, Aleksandr N.; Plotnikov, Vladimir S.; Han, Xiufeng; Chebotkevich, Ludmila A.

    2016-10-01

    We present results on a study of the interplay between microstructure and the magnetic properties of ultrathin Ru/Co/Ru films with perpendicular magnetic anisotropy (PMA). To induce PMA in the Co layer, we experimentally determined thicknesses of the buffer and capping layers of Ru. The maximum value of PMA was observed for the Co thickness of 0.9 nm with the 3 nm thick capping layer. The effective anisotropy field (H eff) and coercive force (H c) of the Co layer are very sensitive to the Ru buffer layer thickness (t b). The values of H eff and H c increase approximately by two and ten times, correspondingly, when t b changes from 6 to 20 nm, owing to an increase in volume fraction of the crystalline phase as a result of the grains’ growth. PMA is found to be mainly enhanced by elastic strains induced by the lattice mismatch on the Ru/Co and Co/Ru interfaces, leading to the deformation of the Co lattice. The surface impact is determined to be less than 10% of the magneto-elastic contribution to the effective anisotropy. Observation of the magnetic domain structure by means of polar Kerr microscopy reveals that out-of-plane magnetization reversal occurs through the nucleation, growth, and annihilation of domains, where the average size drastically rises with the increasing t b.

  14. Preferentially oriented BaTiO3 thin films deposited on silicon with thin intermediate buffer layers

    PubMed Central

    2013-01-01

    Barium titanate (BaTiO3) thin films are prepared by conventional 2-methoxy ethanol-based chemical solution deposition. We report highly c-axis-oriented BaTiO3 thin films grown on silicon substrates, coated with a lanthanum oxynitrate buffer layer of 8.9 nm. The influence of the intermediate buffer layer on the crystallization of BaTiO3 film is investigated. The annealing temperature and buffer layer sintering conditions are optimized to obtain good crystal growth. X-ray diffraction measurements show the growth of highly oriented BaTiO3 thin films having a single perovskite phase with tetragonal geometry. The scanning electron microscopy and atomic force microscopy studies indicate the presence of smooth, crack-free, uniform layers, with densely packed crystal grains on the silicon surface. A BaTiO3 film of 150-nm thickness, deposited on a buffer layer of 7.2 nm, shows a dielectric constant of 270, remnant polarization (2Pr) of 5 μC/cm2, and coercive field (Ec) of 60 kV/cm. PMID:23391429

  15. Method of deforming a biaxially textured buffer layer on a textured metallic substrate and articles therefrom

    DOEpatents

    Lee, Dominic F.; Kroeger, Donald M.; Goyal, Amit

    2000-01-01

    The present invention provides methods and biaxially textured articles having a deformed epitaxial layer formed therefrom for use with high temperature superconductors, photovoltaic, ferroelectric, or optical devices. A buffer layer is epitaxially deposited onto biaxially-textured substrates and then mechanically deformed. The deformation process minimizes or eliminates grooves, or other irregularities, formed on the buffer layer while maintaining the biaxial texture of the buffer layer. Advantageously, the biaxial texture of the buffer layer is not altered during subsequent heat treatments of the deformed buffer. The present invention provides mechanical densification procedures which can be incorporated into the processing of superconducting films through the powder deposit or precursor approaches without incurring unfavorable high-angle grain boundaries.

  16. Method of depositing an electrically conductive oxide buffer layer on a textured substrate and articles formed therefrom

    DOEpatents

    Paranthaman, M. Parans; Aytug, Tolga; Christen, David K.

    2005-10-18

    An article with an improved buffer layer architecture includes a substrate having a textured metal surface, and an electrically conductive lanthanum metal oxide epitaxial buffer layer on the surface of the substrate. The article can also include an epitaxial superconducting layer deposited on the epitaxial buffer layer. An epitaxial capping layer can be placed between the epitaxial buffer layer and the superconducting layer. A method for preparing an epitaxial article includes providing a substrate with a metal surface and depositing on the metal surface a lanthanum metal oxide epitaxial buffer layer. The method can further include depositing a superconducting layer on the epitaxial buffer layer, and depositing an epitaxial capping layer between the epitaxial buffer layer and the superconducting layer.

  17. Method of depositing an electrically conductive oxide buffer layer on a textured substrate and articles formed therefrom

    DOEpatents

    Paranthaman, M. Parans; Aytug, Tolga; Christen, David K.

    2003-09-09

    An article with an improved buffer layer architecture includes a substrate having a textured metal surface, and an electrically conductive lanthanum metal oxide epitaxial buffer layer on the surface of the substrate. The article can also include an epitaxial superconducting layer deposited on the epitaxial buffer layer. An epitaxial capping layer can be placed between the epitaxial buffer layer and the superconducting layer. A method for preparing an epitaxial article includes providing a substrate with a metal surface and depositing on the metal surface a lanthanum metal oxide epitaxial buffer layer. The method can further include depositing a superconducting layer on the epitaxial buffer layer, and depositing an epitaxial capping layer between the epitaxial buffer layer and the superconducting layer.

  18. Modified Lanthanum Zirconium Oxide buffer layers for low-cost, high performance YBCO coated conductors

    NASA Astrophysics Data System (ADS)

    Parans Paranthaman, M.; Sathyamurthy, S.; Li, Xiaoping; Specht, E. D.; Wee, S. H.; Cantoni, C.; Goyal, A.; Rupich, M. W.

    2010-03-01

    The pyrochlore Lanthanum Zirconium Oxide, La 2Zr 2O 7 (LZO), has been developed as a potential replacement barrier layer in the standard RABiTS three-layer architecture of physical vapor deposited CeO 2 cap/YSZ barrier/Y 2O 3 seed on Ni-5%W metal tape. The main focus of this research is to ascertain whether: (i) we can further improve the barrier properties of LZO; (ii) we can modify the LZO cation ratio and still achieve a high level of performance; and (iii) it is possible to reduce the number of buffer layers. We report a systematic investigation of the LZO film growth with varying compositions of La:Zr ratio in the La 2O 3-ZrO 2 system. Using a metal-organic deposition (MOD) process, we have grown smooth, crack-free, epitaxial thin films of La xZr 1-xO y ( x = 0.2-0.6) on standard Y 2O 3 buffered Ni-5W substrates in short lengths. Detailed XRD studies indicate that a single epitaxial LZO phase with only (0 0 1) texture can be achieved in a broad compositional range of x = 0.2-0.6 in La xZr 1-xO y. Both CeO 2 cap layers and MOD-YBCO films were grown epitaxially on these modified LZO barriers. High critical currents per unit width, Ic of 274-292 A/cm at 77 K and self-field were achieved for MOD-YBCO films grown on La xZr 1-xO y ( x = 0.4-0.6) films. These results indicate that LZO films can be grown with a broad compositional range and still support high performance YBCO coated conductors. In addition, epitaxial MOD La xZr 1-xO y ( x = 0.25) films were grown directly on biaxially textured Ni-3W substrates. About 3 μm thick YBCO films grown on a single MOD-LZO buffered Ni-3W substrates using pulsed laser deposition show a critical current density, Jc, of 0.55 MA/cm 2 ( Ic of 169 A/cm) at 77 K and 0.01 T. This work holds promise for a route for producing simplified buffer architecture for RABiTS based YBCO coated conductors.

  19. Planarization and Processing of Metamorphic Buffer Layers Grown by Hydride Vapor-Phase Epitaxy

    NASA Astrophysics Data System (ADS)

    Zutter, Brian T.; Schulte, Kevin L.; Kim, Tae Wan; Mawst, Luke J.; Kuech, T. F.; Foran, Brendan; Sin, Yongkun

    2014-04-01

    Hydride vapor-phase epitaxy (HVPE) is a high-growth-rate, cost-effective means to grow epitaxial semiconductor material. Thick HVPE-based metamorphic buffer layers (MBLs) can serve as "pseudosubstrates" with controllable lattice parameter. In our structures, the indium content in In x Ga1- x As is gradually increased from zero to the final composition corresponding to the desired lattice constant, and then a thick (˜10 μm) constant-composition capping layer is grown. This thick capping layer promotes maximum strain relaxation while permitting use of polishing procedures to achieve surface planarity. Lattice-mismatched growth of MBLs invariably results in rough, cross-hatched surface morphology exhibiting up to 200 nm peak-to-valley roughness. This roughness can be eliminated by chemical mechanical planarization, thus creating a suitable surface for subsequent regrowth. Polishing of In x Ga1- x As is complicated by the sensitivity of the surface layer to the polishing parameters, particularly the applied pressure. Polishing at high applied pressure (12 psi) results in the formation of circular asperities hundreds of nanometers high and tens of microns in diameter. When lower applied pressure (4 psi) was used, the cross-hatching height of MBLs was lowered from 200 nm to <10 nm over a 350 μm lateral scale. The successfully planarized In0.20Ga0.80As MBLs were used as a substrate for a superlattice (SL) structure such as that used in quantum cascade lasers. Use of planarization before regrowth of the SL resulted in a reduction of the high-resolution x-ray diffraction peak full-width at half-maximum from 389″ to 159″.

  20. High Jc YBCO coated conductors on non-magnetic metallic substrate using YSZ-based buffer layer architecture

    NASA Astrophysics Data System (ADS)

    Celentano, G.; Boffa, V.; Ciontea, L.; Fabbri, F.; Galluzzi, V.; Gambardella, U.; Mancini, A.; Petrisor, T.; Rogai, R.; Rufoloni, A.; Varesi, E.

    2002-08-01

    Biaxially aligned YBa 2Cu 3O 7- δ (YBCO) thick films were deposited by pulsed laser ablation technique on cube textured non-magnetic Ni 89V 11 (Ni-V) substrate, using CeO 2/YSZ/CeO 2/NiO buffer layer architecture. The first NiO seed layer was formed by epitaxial oxidation of the Ni-V substrate. Structural analyses show typical full width at half maximum values of φ- and ω-scans less than 10° and 8°, respectively. The highest value obtained for the critical current density at 77 K and zero magnetic field was 6×10 5 A cm -2, which is close to that obtained for YBCO films grown on CeO 2/NiO buffer layer architecture.

  1. Microstructures of YBa2Cu3Oy Layers Deposited on Conductive Layer-Buffered Metal Tapes

    NASA Astrophysics Data System (ADS)

    Ichinose, Ataru; Hashimoto, Masayuki; Horii, Shigeru; Doi, Toshiya

    REBa2Cu3Oy (REBCO; RE: rare-earth elements)-coated conductors (CCs) have high potential for use in superconducting devices. In particular, REBCO CCs are useful for superconducting devices working at relatively high temperatures near 77 K. The important issues in their applications are high performance, reliability and low cost. To date, sufficient performance for some applications has almost been achieved by considerable efforts. The establishment of the reliability of superconducting devices is under way at present. The issue of low cost must be resolved to realize the application of superconducting devices in the near future. Therefore, we have attempted several ways to reduce the cost of REBCO CCs. The coated conductors using a Nb-doped SrTiO3 buffer layer and Ni-plated Cu and stainless steel laminate metal tapes have recently been developed to eliminate the use of electric stabilization layers of Cu and Ag, which are expected to reduce the material cost. Good superconducting properties are obtained at 77 K. The critical current density (JC) at 77 K under a magnetic self-field is determined to be more than 2x106 A/cm2. The microstructures of the CCs are analyzed by transmission electron microscopy to obtain a much higher quality. By microscopic structure analysis, an overgrowth of the buffer layer is observed at a grain boundary of the metal substrate, which is one of the reasons for the high JC.

  2. MgO buffer layers on rolled nickel or copper as superconductor substrates

    DOEpatents

    Paranthaman, Mariappan; Goyal, Amit; Kroeger, Donald M.; List, III, Frederic A.

    2001-01-01

    Buffer layer architectures are epitaxially deposited on biaxially-textured rolled-Ni and/or Cu substrates for high current conductors, and more particularly buffer layer architectures such as MgO/Ag/Pt/Ni, MgO/Ag/Pd/Ni, MgO/Ag/Ni, MgO/Ag/Pd/Cu, MgO/Ag/Pt/Cu, and MgO/Ag/Cu. Techniques used to deposit these buffer layers include electron beam evaporation, thermal evaporation, rf magnetron sputtering, pulsed laser deposition, metal-organic chemical vapor deposition (MOCVD), combustion CVD, and spray pyrolysis.

  3. Method for making MgO buffer layers on rolled nickel or copper as superconductor substrates

    DOEpatents

    Paranthaman, Mariappan; Goyal, Amit; Kroeger, Donald M.; List, III, Frederic A.

    2002-01-01

    Buffer layer architectures are epitaxially deposited on biaxially-textured rolled-Ni and/or Cu substrates for high current conductors, and more particularly buffer layer architectures such as MgO/Ag/Pt/Ni, MgO/Ag/Pd/Ni, MgO/Ag/Ni, MgO/Ag/Pd/Cu, MgO/Ag/Pt/Cu, and MgO/Ag/Cu. Techniques used to deposit these buffer layers include electron beam evaporation, thermal evaporation, rf magnetron sputtering, pulsed laser deposition, metal-organic chemical vapor deposition (MOCVD), combustion CVD, and spray pyrolysis.

  4. Critical CuI buffer layer surface density for organic molecular crystal orientation change

    SciTech Connect

    Ahn, Kwangseok; Kim, Jong Beom; Lee, Dong Ryeol; Kim, Hyo Jung; Lee, Hyun Hwi

    2015-01-21

    We have determined the critical surface density of the CuI buffer layer inserted to change the preferred orientation of copper phthalocyanine (CuPc) crystals grown on the buffer layer. X-ray reflectivity measurements were performed to obtain the density profiles of the buffer layers and out-of-plane and 2D grazing-incidence X-ray diffraction measurements were performed to determine the preferred orientations of the molecular crystals. Remarkably, it was found that the preferred orientation of the CuPc film is completely changed from edge-on (1 0 0) to face-on (1 1 −2) by a CuI buffer layer with a very low surface density, so low that a large proportion of the substrate surface is bare.

  5. Effect of buffer layer growth temperature on epitaxial GaN films deposited by magnetron sputtering

    SciTech Connect

    Mohanta, P.; Singh, D.; Kumar, R.; Ganguli, T.; Srinivasa, R. S.; Major, S. S.

    2012-06-05

    Epitaxial GaN films were deposited by reactive sputtering of a GaAs target in 100 % nitrogen at 700 deg. C on ZnO buffer layers grown at different substrate temperatures over sapphire substrates. High resolution X-ray diffraction measurements and the corresponding analysis show that the growth temperature of buffer layers significantly affects the micro-structural parameters of GaN epilayer, such as lateral coherence length, tilt and twist, while the vertical coherence length remains unaffected. The optimum substrate temperature for buffer layer growth has been found to be 300 deg. C. High epitaxial quality GaN film grown on such a buffer layer exhibited micro strain of 1.8x10{sup -4} along with screw and edge type dislocation densities of 7.87x10{sup 9} and 1.16x10{sup 11}, respectively.

  6. The effect of buffer molarity on the size, shape and sheath thickness of peripheral myelinated nerve fibres.

    PubMed

    Holland, G R

    1982-08-01

    Nineteen rats were perfused intracardially with a 2% glutaraldehyde solution in cacodylate buffers adjusted in molarity from 0 to 0.4 M. Ultrathin sections of the inferior alveolar nerve were photographed in the electron microscope. The circumference, a shape factor, small diameter and myelin sheath thickness of each myelinated nerve fibre were measured using a semi-automatic image analysis system. Statistical analysis of the data revealed that the nerve profiles increasingly deviate from a true circle with higher concentrations of buffer. The small diameter of the myelinated nerve fibres declines linearly with increasing buffer molarity whereas circumference is unaffected. Myelin sheath thickness is correlated with fibre size but is not affected by changes in buffer molarity. The use of fibre circumference is recommended to allow valid comparison of results between studies in which fixation protocols may differ.

  7. Thick growing multilayer nanobrick wall thin films: super gas barrier with very few layers.

    PubMed

    Guin, Tyler; Krecker, Michelle; Hagen, David Austin; Grunlan, Jaime C

    2014-06-24

    Recent work with multilayer nanocoatings composed of polyelectrolytes and clay has demonstrated the ability to prepare super gas barrier layers from water that rival inorganic CVD-based films (e.g., SiOx). In an effort to reduce the number of layers required to achieve a very low oxygen transmission rate (OTR (<0.01 cc/m(2)·day·atm)) in these nanocoatings, buffered cationic chitosan (CH) and vermiculite clay (VMT) were deposited using layer-by-layer (LbL) assembly. Buffering the chitosan solution and its rinse with 50 mM Trizma base increased the thickness of these films by an order of magnitude. The OTR of a 1.6-μm-thick, six-bilayer film was 0.009 cc/m(2)·day·atm, making this the best gas barrier reported for such a small number of layers. This simple modification to the LbL process could likely be applied more universally to produce films with the desired properties much more quickly.

  8. Morphology and wettability of ZnO nanostructures prepared by hydrothermal method on various buffer layers

    NASA Astrophysics Data System (ADS)

    Li, Bao-jia; Huang, Li-jing; Zhou, Ming; Ren, Nai-fei

    2013-12-01

    Zinc oxide (ZnO) nanostructures were prepared by hydrothermal method on glass substrates with various buffer layers: Ag, Al, aluminum-doped zinc oxide (AZO) and tin-doped indium oxide (ITO). The structure, morphology and wettability of the ZnO nanostructured surfaces were investigated by using X-ray diffraction, scanning electron microscopy and water contact angle (WCA) analysis methods, respectively. All the nanostructures grown on glass with various buffer layers exhibited strong growth orientation along the (1 0 1) plane. The nature of the buffer layer was found to have remarkable effect on the morphology and wettability of the ZnO nanostructures. Whether the buffer layers were hydrophilic or low hydrophobic, all the ZnO nanostructures grown on the various buffer layers showed high hydrophobic property, and that grown on the AZO buffer layer even exhibited superhydrophobicity with a WCA of 151.1°. This work may provide a scientific basis for self-cleaning ZnO-based optoelectronic device applications.

  9. Wind-tunnel simulation of thick turbulent boundary layer

    NASA Astrophysics Data System (ADS)

    Kornilov, V. I.; Boiko, A. V.

    2012-06-01

    An experimental study aimed at revealing the possibility of simulation, in a subsonic wind tunnel, of enhanced Reynolds numbers Re** via modeling a thick flat-plate boundary layer possessing the properties of a Clauser-equilibrium shear flow is reported. We show that turbulators prepared in the form of variable-height cylinders of height h and diameter d = 3 mm and installed in two rows along the normal to the streamlined wall offer rather an efficient means for modification of turbulent boundary layer in solving the problem. In the majority of cases, mean and fluctuating characteristics of the boundary layer exhibit values typical of naturally developing turbulent boundary layers at a distance of 530 cylinder diameters. The profiles of mean velocity with artificially enhanced boundary-layer thickness can be well approximated, in the law-of-the-wall variables, with the well-known distribution of velocities for canonical boundary layer.

  10. Growth of lanthanum manganate buffer layers for coated conductors via a metal-organic decomposition process

    NASA Astrophysics Data System (ADS)

    Venkataraman, Kartik

    LaMnO3 (LMO) was identified as a possible buffer material for YBa2Cu3O7-x conductors due to its diffusion barrier properties and close lattice match with YBa2Cu 3O7-x. Growth of LMO films via a metal-organic decomposition (MOD) process on Ni, Ni-5at.%W (Ni-5W), and single crystal SrTiO3 substrates was investigated. Phase-pure LMO was grown via MOD on Ni and SrTiO 3 substrates at temperatures and oxygen pressures within a thermodynamic "process window" wherein LMO, Ni, Ni-5W, and SrTiO3 are all stable components. LMO could not be grown on Ni-5W in the "process window" because tungsten diffused from the substrate into the overlying film, where it reacted to form La and Mn tungstates. The kinetics of tungstate formation and crystallization of phase-pure LMO from the La and Mn acetate precursors are competitive in the temperature range explored (850--1100°C). Temperatures <850°C might mitigate tungsten diffusion from the substrate to the film sufficiently to obviate tungstate formation, but LMO films deposited via MOD require temperatures ≥850°C for nucleation and grain growth. Using a Y2O3 seed layer on Ni-5W to block tungsten from diffusing into the LMO film was explored; however, Y2O3 reacts with tungsten in the "process window" at 850--1100°C. Tungsten diffusion into Y2O3 can be blocked if epitaxial, crack-free NiWO4 and NiO layers are formed at the interface between Ni-5W and Y2O3. NiWO 4 only grows epitaxially if the overlying NiO and buffer layers are thick enough to mechanically suppress (011)-oriented NiWO4 grain growth. This is not the case when a bare 75 nm-thick Y2O3 film on Ni-5W is processed at 850°C. These studies show that the Ni-5W substrate must be at a low temperature to prevent tungsten diffusion, whereas the LMO precursor film must be at elevated temperature to crystallize. An excimer laser-assisted MOD process was used where a Y2O 3-coated Ni-5W substrate was held at 500°C in air and the pulsed laser photo-thermally heated the Y2O3 and LMO

  11. Nanometer-Scale Epitaxial Strain Release in Perovskite Heterostructures Using 'SrAlOx' Sliding Buffer Layers

    SciTech Connect

    Bell, Christopher

    2011-08-11

    We demonstrate the strain release of LaAlO{sub 3} epitaxial film on SrTiO{sub 3} (001) by inserting ultra-thin 'SrAlO{sub x}' buffer layers. Although SrAlO{sub x} is not a perovskite, nor stable as a single phase in bulk, epitaxy stabilizes the perovskite structure up to a thickness of 2 unit cells (uc). At a critical thickness of 3 uc of SrAlO{sub x}, the interlayer acts as a sliding buffer layer, and abruptly relieves the lattice mismatch between the LaAlO{sub 3} filmand the SrTiO{sub 3} substrate, while maintaining crystallinity. This technique may provide a general approach for strain relaxation of perovskite film far below the thermodynamic critical thickness. A central issue in heteroepitaxial filmgrowth is the inevitable difference in lattice constants between the filmand substrate. Due to this lattice mismatch, thin film are subjected to microstructural strain, which can have a significan effect on the filmproperties. This challenge is especially prominent in the rapidly developing fiel of oxide electronics, where much interest is focused on incorporating the emergent physical properties of oxides in devices. Although strain can be used to great effect to engineer unusual ground states, it is often deleterious for bulk first-orde phase transitions, which are suppressed by the strain and symmetry constraints of the substrate. While there are some reports discussing the control of the lattice mismatch in oxides using thick buffer layers, the materials choice, lattice-tunable range, and control of misfit dislocations are still limited. In this Letter, we report the fabrication of strain-relaxed LaAlO{sub 3} (LAO) thin film on SrTiO{sub 3} (STO) (001) using very thin 'SrAlO{sub x}' (SAO) buffer layers. Whereas for 1 or 2 pseudo-perovskite unit cells (uc) of SAO, the subsequent LAO filmis strained to the substrate, at a critical thickness of 3 uc the SAO interlayer abruptly relieves the lattice mismatch between the LAO and the STO, although maintaining the

  12. The effect of the carbon nanotube buffer layer on the performance of a Li metal battery

    NASA Astrophysics Data System (ADS)

    Zhang, Ding; Zhou, Yi; Liu, Changhong; Fan, Shoushan

    2016-05-01

    Lithium (Li) metal is one of the most promising candidates as an anode for the next-generation energy storage systems because of its high specific capacity and lowest negative electrochemical potential. But the growth of Li dendrites limits the application of the Li metal battery. In this work, a type of modified Li metal battery with a carbon nanotube (CNT) buffer layer inserted between the separator and the Li metal electrode was reported. The electrochemical results show that the modified batteries have a much better rate capability and cycling performance than the conventional Li metal batteries. The mechanism study by electrochemical impedance spectroscopy reveals that the modified battery has a smaller charge transfer resistance and larger Li ion diffusion coefficient during the deposition process on the Li electrode than the conventional Li metal batteries. Symmetric battery tests show that the interfacial behavior of the Li metal electrode with the buffer layer is more stable than the naked Li metal electrode. The morphological characterization of the CNT buffer layer and Li metal lamina reveals that the CNT buffer layer has restrained the growth of Li dendrites. The CNT buffer layer has great potential to solve the safety problem of the Li metal battery.Lithium (Li) metal is one of the most promising candidates as an anode for the next-generation energy storage systems because of its high specific capacity and lowest negative electrochemical potential. But the growth of Li dendrites limits the application of the Li metal battery. In this work, a type of modified Li metal battery with a carbon nanotube (CNT) buffer layer inserted between the separator and the Li metal electrode was reported. The electrochemical results show that the modified batteries have a much better rate capability and cycling performance than the conventional Li metal batteries. The mechanism study by electrochemical impedance spectroscopy reveals that the modified battery has a

  13. Photovoltaic devices comprising zinc stannate buffer layer and method for making

    DOEpatents

    Wu, Xuanzhi; Sheldon, Peter; Coutts, Timothy J.

    2001-01-01

    A photovoltaic device has a buffer layer zinc stannate Zn.sub.2 SnO.sub.4 disposed between the semiconductor junction structure and the transparent conducting oxide (TCO) layer to prevent formation of localized junctions with the TCO through a thin window semiconductor layer, to prevent shunting through etched grain boundaries of semiconductors, and to relieve stresses and improve adhesion between these layers.

  14. Transparent layer thickness measurement using low-coherence interference microscopy

    NASA Astrophysics Data System (ADS)

    Kühnhold, P.; Nolvi, A.; Tereschenko, S.; Kassamakov, I.; Hæggström, E.; Lehmann, P.

    2015-05-01

    The investigation of transparent optical layers is a growing field of application of white-light interferometry. Robust algorithms exist that extract the signal components from different layers inside a transparent structure. The separated signal contributions are then evaluated individually. Two contradicting situations have to be accounted for when low-coherence interferometry is used to measure layer structures. First, with a low NA system and a short coherence light source, the optical path difference between the layers is measured. Second, if a high NA interferometer and a long coherence light source is used, the limited depth of focus limits the correlogram width. In this case, the layer thickness is underestimated. In this paper a 2.2 μm thick reference layer is studied. This layer was measured with different interferometric systems: Michelson and Mirau interferometers with magnifications from 5x to 100x. Furthermore, light sources with different temporal coherence length were used. If lateral resolution is unimportant, the combination of a low NA measuring system and a low coherence length light source provides a larger distance between the signal contributions from different boundary layers and therefore better separation, bias correction, and higher accuracy, compared to a high NA system. The interferometer system can be calibrated by measuring the layer thickness of a small structure with respect to a substrate. Such a calibration permits performing measurements with a high NA interferometer and a low coherence light source. The main contribution of this paper is to compare and discuss results of these different options of layer thickness measurement with respect to measurement accuracy and uncertainty influences.

  15. Epitaxial NbN/AlN/NbN tunnel junctions on Si substrates with TiN buffer layers

    NASA Astrophysics Data System (ADS)

    Sun, Rui; Makise, Kazumasa; Zhang, Lu; Terai, Hirotaka; Wang, Zhen

    2016-06-01

    We have developed epitaxial NbN/AlN/NbN tunnel junctions on Si (100) substrates with a TiN buffer layer. A 50-nm-thick (200)-oriented TiN thin film was introduced as the buffer layer for epitaxial growth of NbN/AlN/NbN trilayers on Si substrates. The fabricated NbN/AlN/NbN junctions demonstrated excellent tunneling properties with a high gap voltage of 5.5 mV, a large IcRN product of 3.8 mV, a sharp quasiparticle current rise with a ΔVg of 0.4 mV, and a small subgap leakage current. The junction quality factor Rsg/RN was about 23 for the junction with a Jc of 47 A/cm2 and was about 6 for the junction with a Jc of 3.0 kA/cm2. X-ray diffraction and transmission electron microscopy observations showed that the NbN/AlN/NbN trilayers were grown epitaxially on the (200)-orientated TiN buffer layer and had a highly crystalline structure with the (200) orientation.

  16. Growth mechanisms of GaSb heteroepitaxial films on Si with an AlSb buffer layer

    SciTech Connect

    Vajargah, S. Hosseini; Botton, G. A.; Ghanad-Tavakoli, S.; Preston, J. S.; Kleiman, R. N.

    2013-09-21

    The initial growth stages of GaSb epilayers on Si substrates and the role of the AlSb buffer layer were studied by high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM). Heteroepitaxy of GaSb and AlSb on Si both occur by Volmer-Weber (i.e., island mode) growth. However, the AlSb and GaSb islands have distinctly different characteristics as revealed through an atomic-resolution structural study using Z-contrast of HAADF-STEM imaging. While GaSb islands are sparse and three dimensional, AlSb islands are numerous and flattened. The introduction of 3D island-forming AlSb buffer layer facilitates the nucleation of GaSb islands. The AlSb islands-assisted nucleation of GaSb islands results in the formation of drastically higher quality planar film at a significantly smaller thickness of films. The interface of the AlSb and GaSb epilayers with the Si substrate was further investigated with energy dispersive X-ray spectrometry to elucidate the key role of the AlSb buffer layer in the growth of GaSb epilayers on Si substrates.

  17. Automated segmentation of intraretinal layers from spectral-domain macular OCT: reproducibility of layer thickness measurements

    NASA Astrophysics Data System (ADS)

    Lee, Kyungmoo; Abràmoff, Michael D.; Sonka, Milan; Garvin, Mona K.

    2011-03-01

    Changes in intraretinal layer thickness occur in a variety of diseases such as glaucoma, macular edema and diabetes. To segment the intraretinal layers from macular spectral-domain OCT (SD-OCT) scans, we previously introduced an automated multiscale 3-D graph search method and validated its performance by computing unsigned border positioning differences when compared with human expert tracings. However, it is also important to study the reproducibility of resulting layer thickness measurements, as layer thickness is a commonly used clinical parameter. In this work, twenty eight (14 x 2) repeated macular OCT volumes were acquired from the right eyes of 14 normal subjects using two Zeiss-Cirrus SD-OCT scanners. After segmentation of 10 intraretinal layers and rigid registration of layer thickness maps from the repeated OCT scans, the thickness difference of each layer was calculated. The overall mean global and regional thickness differences of 10 intraretinal layers were 0.46 +/- 0.25 μm (1.70 +/- 0.72 %) and 1.16 +/- 0.84 μm (4.03 +/- 2.05 %), respectively. No specific local region showed a consistent thickness difference across the layers.

  18. Buffer layer annealing effects on the magnetization reversal process in Pd/Co/Pd systems

    NASA Astrophysics Data System (ADS)

    Fassatoui, A.; Belhi, R.; Vogel, J.; Abdelmoula, K.

    2016-12-01

    We have investigated the effect of annealing the buffer layer on the magnetization reversal behavior in Pd/Co/Pd thin films using magneto-optical Kerr microscopy. It was found that annealing the buffer layer at 150 °C for 1 h decreases the coercivity and increases the saturation magnetization and the effective magnetic anisotropy constant. This study also shows that the annealing induces a change of the magnetization reversal from a mixed nucleation and domain wall propagation process to one dominated by domain wall propagation. This result demonstrates that the main effect of annealing the buffer layer is to decrease the domain wall pinning in the Co layer, favoring the domain wall propagation mode.

  19. Electron dynamics of the buffer layer and bilayer graphene on SiC

    NASA Astrophysics Data System (ADS)

    Shearer, Alex J.; Johns, James E.; Caplins, Benjamin W.; Suich, David E.; Hersam, Mark C.; Harris, Charles B.

    2014-06-01

    Angle- and time-resolved two-photon photoemission (TPPE) was used to investigate electronic states in the buffer layer of 4H-SiC(0001). An image potential state (IPS) series was observed on this strongly surface-bound buffer layer, and dispersion measurements indicated free-electron-like behavior for all states in this series. These results were compared with TPPE taken on bilayer graphene, which also show the existence of a free-electron-like IPS series. Lifetimes for the n = 2, and n = 3 states were obtained from time-resolved TPPE; slightly increased lifetimes were observed in the bilayer graphene sample for the n = 2 the n = 3 states. Despite the large band gap of graphene at the center of the Brillouin zone, the lifetime results demonstrate that the graphene layers do not behave as a simple tunneling barrier, suggesting that the buffer layer and graphene overlayers play a direct role in the decay of IPS electrons.

  20. Synthesis of Vertically Aligned ZnO Nanorods on Ni-Based Buffer Layers Using a Thermal Evaporation Process

    NASA Astrophysics Data System (ADS)

    Kuo, Dong-Hau; He, Jheng-Yu; Huang, Ying-Sheng

    2012-03-01

    Uniform, vertically aligned ZnO nanorods have been grown mainly on Au-coated and ZnO-coated sapphire substrates, ZnO- and GaN-coated substrates, or self-catalyzing substrates. Conventionally, Ni-coated substrates have resulted in thick rods with diameter more than 250 nm, rods with nonuniform distribution in diameter, or rods with an alignment problem. In the best result in this paper, slender, uniform, vertically aligned, solely UV-emitting ZnO nanorods with diameter of 110 ± 25 nm and length of 30 ± 10 μm have been successfully grown at 700°C for 2 h on sapphire substrates covered with Ni-based buffer layers by using metallic zinc and oxygen as reactants. Scanning electron microscopy and room-temperature photoluminescence have been used to investigate the effects of process conditions on the slenderness and vertical alignment of the ZnO rods. To develop the desired ZnO nanorods, etched sapphire substrates, a second metallic Sn buffer layer on top of a spin-coated nickel oxide layer, polyvinyl alcohol binder at 10% concentration in solution of iron nitrate, and pyrolysis and reduction reactions were involved. Defect photoemission for thick ZnO rods is attributed to insufficient oxygen supply during the growth process with fixed oxygen flow rate.

  1. The effect of the carbon nanotube buffer layer on the performance of a Li metal battery.

    PubMed

    Zhang, Ding; Zhou, Yi; Liu, Changhong; Fan, Shoushan

    2016-06-01

    Lithium (Li) metal is one of the most promising candidates as an anode for the next-generation energy storage systems because of its high specific capacity and lowest negative electrochemical potential. But the growth of Li dendrites limits the application of the Li metal battery. In this work, a type of modified Li metal battery with a carbon nanotube (CNT) buffer layer inserted between the separator and the Li metal electrode was reported. The electrochemical results show that the modified batteries have a much better rate capability and cycling performance than the conventional Li metal batteries. The mechanism study by electrochemical impedance spectroscopy reveals that the modified battery has a smaller charge transfer resistance and larger Li ion diffusion coefficient during the deposition process on the Li electrode than the conventional Li metal batteries. Symmetric battery tests show that the interfacial behavior of the Li metal electrode with the buffer layer is more stable than the naked Li metal electrode. The morphological characterization of the CNT buffer layer and Li metal lamina reveals that the CNT buffer layer has restrained the growth of Li dendrites. The CNT buffer layer has great potential to solve the safety problem of the Li metal battery. PMID:27181758

  2. The effect of the carbon nanotube buffer layer on the performance of a Li metal battery.

    PubMed

    Zhang, Ding; Zhou, Yi; Liu, Changhong; Fan, Shoushan

    2016-06-01

    Lithium (Li) metal is one of the most promising candidates as an anode for the next-generation energy storage systems because of its high specific capacity and lowest negative electrochemical potential. But the growth of Li dendrites limits the application of the Li metal battery. In this work, a type of modified Li metal battery with a carbon nanotube (CNT) buffer layer inserted between the separator and the Li metal electrode was reported. The electrochemical results show that the modified batteries have a much better rate capability and cycling performance than the conventional Li metal batteries. The mechanism study by electrochemical impedance spectroscopy reveals that the modified battery has a smaller charge transfer resistance and larger Li ion diffusion coefficient during the deposition process on the Li electrode than the conventional Li metal batteries. Symmetric battery tests show that the interfacial behavior of the Li metal electrode with the buffer layer is more stable than the naked Li metal electrode. The morphological characterization of the CNT buffer layer and Li metal lamina reveals that the CNT buffer layer has restrained the growth of Li dendrites. The CNT buffer layer has great potential to solve the safety problem of the Li metal battery.

  3. Improving performance of inverted organic solar cells using ZTO nanoparticles as cathode buffer layer

    NASA Astrophysics Data System (ADS)

    Tsai, Meng-Yen; Cheng, Wen-Hui; Jeng, Jiann-Shing; Chen, Jen-Sue

    2016-06-01

    In this study, a low-temperature solution-processed zinc tin oxide (ZTO) films are successfully utilized as the cathode buffer layer in the inverted organic P3HT:PCBM bulk heterojunction solar cells. ZTO film cathode buffer layer with an appropriate Sn-doping concentration outperforms the zinc oxide (ZnO) film with an improved power conversion efficiency (1.96% (ZTO film) vs. 1.56% (ZnO film)). Furthermore, ZTO nanoparticles (NPs) are also synthesized via low-temperature solution route and the device with ZTO NPs buffer layer exhibits a significant improvement in device performance to reach a PCE of 2.60%. The crystallinity of the cathode buffer layer plays an influential factor in the performance. From impedance spectroscopy analysis, a correlation between short circuit current (Jsc), carrier life time (τavg) and, thus, PCE is observed. The interplay between composition and crystallinity of the cathode buffer layers is discussed to find their influences on the solar cell performance.

  4. A Proposal of Evaluation of Frost Layer Thickness

    NASA Astrophysics Data System (ADS)

    Yotsumoto, Hiroyuki; Ishihara, Isao; Tanio, Kenichi; Matsumoto, Ryosuke

    The frosting is an unsteady phenomenon occurs simultaneously with heat and mass transfer. Both the heat and water vapor in the humid air reach the surface of the frost layer and transfer to the cold surface. The frost surface plays an important role as an interface of heat and mass transfer between air-flow and ice-air composite solid layer. However, since the frost layer surface consists of ice and air, and is rough and unsteady, any specific definition of the frost layer thickness is not found. This paper tried to give the definition. The frost layer thickness was measured by using a micro photo-sensing device combined with a light emitter and receiver traversing normal to the frost surface. During traversing the device, a peak response from the device indicates the vertical position corresponding to the maximum frost area exposed to the emitted light i.e. air around the frost inside the frost layer. This position is defined as the frost layer position and it could give an effective frost layer.

  5. Evaluation of methods for application of epitaxial layers of superconductor and buffer layers

    SciTech Connect

    1997-06-01

    The recent achievements in a number of laboratories of critical currents in excess of 1.0x10{sup 6} amp/cm{sup 2} at 77K in YBCO deposited over suitably textured buffer/substrate composites have stimulated interest in the potential applications of coated conductors at high temperatures and high magnetic fields. As of today, two different approaches for obtaining the textured substrates have been identified. These are: Los Alamos National Laboratory`s (LANL) ion-beam assisted deposition called IBAD, to obtain a highly textured yttria-stabilized zirconia (YSZ) buffer on nickel alloy strips, and Oak Ridge National Laboratory`s (ORNL) rolling assisted, bi-axial texturized substrate option called RABiTS. Similarly, based on the published literature, the available options to form High Temperature Superconductor (HTS) films on metallic, semi-metallic or ceramic substrates can be divided into: physical methods, and non-physical or chemical methods. Under these two major groups, the schemes being proposed consist of: - Sputtering - Electron-Beam Evaporation - Flash Evaporation - Molecular Beam Epitaxy - Laser Ablation - Electrophoresis - Chemical Vapor Deposition (Including Metal-Organic Chemical Vapor Deposition) - Sol-Gel - Metal-Organic Decomposition - Electrodeposition, and - Aerosol/Spray Pyrolysis. In general, a spool- to-spool or reel-to-reel type of continuous manufacturing scheme developed out of any of the above techniques, would consist of: - Preparation of Substrate Material - Preparation and Application of the Buffer Layer(s) - Preparation and Application of the HTS Material and Required Post-Annealing, and - Preparation and Application of the External Protective Layer. These operations would be affected by various process parameters which can be classified into: Chemistry and Material Related Parameters; and Engineering and Environmental Based Parameters. Thus, one can see that for successful development of the coated conductors manufacturing process, an

  6. [Study on the Effects of Alq₃:CsF Composite Cathode Buffer Layer on the Performances of CuPc/C₆₀ Solar Cells].

    PubMed

    Zhao, Huan-bin; Sun, Qin-jun; Zhou, Miao; Gao, Li-yan; Hao, Yu-ying; Shi, Fang

    2016-02-01

    This paper introduces the methods improving the performance and stability of copper-phthalocyanine(CuPc) / fullerene (C₆₀) small molecule solar cells by using tris-(8-hydroxyquinoline) aluminum(Alq₃): cesium fluoride(CsF) composite cathode buffer layer. The device with Alq₃:CsF composite cathode buffer layer with a 4 wt. % CsF at a thickness of 5 nm exhibits a power conversion efficiency (PCE) of up to 0.76%, which is an improvement of 49%, compared to a device with single Alq₃ cathode buffer layer and half-lifetime of the cell in air at ambient circumstance without any encapsulation is almost 9.8 hours, 6 times higher than that of without buffer layer, so the stability is maintained. The main reason of the device performance improvement is that doping of CsF can adjust the interface energy alignment, optimize the electronic transmission characteristics of Alq₃ and improve the short circuit current and the fill factor of the device using ultraviolet-visible absorption, external quantum efficiency and single-electron devices. Placed composite cathode buffer layer devices with different time in the air, by comparing and analyzing current voltage curve, Alq₃:CsF can maintain a good stability as Alq₃. Alq₃:CsF layer can block the diffusion of oxygen and moisture so completely as to improve the lifetime of the device. PMID:27209725

  7. Surface Smoothing Effect and Characteristics of New 1,4-Phenylenediamine Polymer as Anode Buffer Layer

    NASA Astrophysics Data System (ADS)

    Iida, Koichiro; Ogata, Tomoyuki; Okabe, Kazuki; Tanaka, Futoshi; Hara, Masahiko

    2007-11-01

    We have developed a new 1,4-phenylenediamine polymer with suitable properties for the anode buffer layer of organic devices. The anode buffer layer composed of a polymer doped with an electron acceptor [tris(4-bromophenyl)aminium hexachloroantimonate] was found to improve the surface roughness of the anode, particularly when the layer was sufficiently baked at a high temperature to transform it into the glass phase. The phase transition of the layer into the glass phase also affected its electric properties. Despite that the baking temperature was higher than the decomposition temperature of the electron acceptor, the resistivity of the layer with a smooth surface was one order of magnitude lower than that of the undoped layer.

  8. Silver hollow optical fibers with acrylic silicone resin coating as buffer layer for sturdy structure

    NASA Astrophysics Data System (ADS)

    Iwai, Katsumasa; Takaku, Hiroyuki; Miyagi, Mitsunobu; Shi, Yi-Wei; Zhu, Xiao-Song; Matsuura, Yuji

    2016-03-01

    For sturdy silver hollow optical fibers, acrylic silicone resin is newly used as a buffer layer between an inner silver layer and a silica capillary. This acrylic silicone resin film prevents the glass surface from chemical and mechanical micro damages during silver plating process, which deteriorate mechanical strength of the hollow fibers. In addition, it keeps high adhesion of the silver layer with the glass surface. We discuss improvement of mechanical strength of the hollow glass fibers without deterioration of optical properties.

  9. Microstructure of GaN epitaxy on SiC using AlN buffer layers

    SciTech Connect

    Ponce, F.A.; Krusor, B.S.; Major, J.S. Jr.; Plano, W.E.; Welch, D.F.

    1995-07-17

    The crystalline structure of GaN epilayers on (0001) SiC substrates has been studied using x-ray diffraction and transmission microscopy. The films were grown by metalorganic chemical vapor deposition, using AlN buffer layers. X-ray diffraction measurements show negligible strain in the epilayer, and a long-range variation in orientation. Transmission electron lattice images show that the AlN buffer layer consists of small crystallites. The nature of the buffer layer and its interfaces with the substrate and the GaN film is discussed. The defect structure of the GaN film away from the substrate consists mostly of threading dislocations with a density of {similar_to}10{sup 9} cm{sup {minus}2}. {copyright} {ital 1995} {ital American} {ital Institute} {ital of} {ital Physics}.

  10. Growth and micro structural studies on Yittria Stabilized Zirconia (YSZ) and Strontium Titanate (STO) buffer layers

    NASA Technical Reports Server (NTRS)

    Srinivas, S.; Pinto, R.; Pai, S. P.; Dsousa, D. P.; Apte, P. R.; Kumar, D.; Purandare, S. C.; Bhatnagar, A. K.

    1995-01-01

    Microstructure of Yittria Stabilized Zirconia (YSZ) and Strontium Titanate (STO) of radio frequency magnetron sputtered buffer layers was studied at various sputtering conditions on Si (100), Sapphire and LaAlO3 (100) substrates. The effect of substrate temperatures up to 800 C and sputtering gas pressures in the range of 50 mTorr. of growth conditions was studied. The buffer layers of YSZ and STO showed a strong tendency for columnar growth was observed above 15 mTorr sputtering gas pressure and at high substrate temperatures. Post annealing of these films in oxygen atmosphere reduced the oxygen deficiency and strain generated during growth of the films. Strong c-axis oriented superconducting YBa2Cu3O7-x (YBCO) thin films were obtained on these buffer layers using pulsed laser ablation technique. YBCO films deposited on multilayers of YSZ and STO were shown to have better superconducting properties.

  11. Buffer layer between a planar optical concentrator and a solar cell

    SciTech Connect

    Solano, Manuel E.; Barber, Greg D.; Lakhtakia, Akhlesh; Faryad, Muhammad; Monk, Peter B.; Mallouk, Thomas E.

    2015-09-15

    The effect of inserting a buffer layer between a periodically multilayered isotropic dielectric (PMLID) material acting as a planar optical concentrator and a photovoltaic solar cell was theoretically investigated. The substitution of the photovoltaic material by a cheaper dielectric material in a large area of the structure could reduce the fabrication costs without significantly reducing the efficiency of the solar cell. Both crystalline silicon (c-Si) and gallium arsenide (GaAs) were considered as the photovoltaic material. We found that the buffer layer can act as an antireflection coating at the interface of the PMLID and the photovoltaic materials, and the structure increases the spectrally averaged electron-hole pair density by 36% for c-Si and 38% for GaAs compared to the structure without buffer layer. Numerical evidence indicates that the optimal structure is robust with respect to small changes in the grating profile.

  12. Effect of buffer layer and external stress on magnetic properties of flexible FeGa films

    NASA Astrophysics Data System (ADS)

    Zhang, Xiaoshan; Zhan, Qingfeng; Dai, Guohong; Liu, Yiwei; Zuo, Zhenghu; Yang, Huali; Chen, Bin; Li, Run-Wei

    2013-05-01

    We systematically investigated the effect of a Ta buffer layer and external stress on the magnetic properties of magnetostrictive Fe81Ga19 films deposited on flexible polyethylene terephthalate (PET) substrates. The Ta buffer layers could effectively smoothen the rough surface of PET. As a result, the FeGa films grown on Ta buffer layers exhibit a weaker uniaxial magnetic anisotropy and lower coercivity, as compared to those films directly grown on PET substrates. By inward and outward bending the FeGa/Ta/PET samples, external in-plane compressive and tensile stresses were applied to the magnetic films. Due to the inverse magnetostrictive effect of FeGa, both the coercivity and squareness of hysteresis loops for FeGa/Ta films could be well tuned under various strains.

  13. Coercivity enhancement of Nd-Fe-B thin film magnets by Dy buffer and capping layers

    NASA Astrophysics Data System (ADS)

    You, C. Y.; Wang, J. W.; Lu, Z. X.

    2012-04-01

    The Dy layer was inserted into the structure of SiO2/Ti/Nd-Fe-B/Ti as the buffer or capping layer of the Nd-Fe-B layer. The insertions of Dy layers had no significant influence on the film texture with the easy axis mainly perpendicular to the film plane. The film without Dy layer gave the out-of-plane coercivity of 533 kA/m, maximum magnetic energy product (BH)max of 245 kJ/m3. With a Dy buffer layer, the out-of-plane coercivity and (BH)max were increased to 1074 kA/m, 291 kJ/m3 respectively. The film with Dy capping layer had a coercivity of 1035 kA/m and (BH)max of 286 kJ/m3. Microstructure observations showed that the Nd-rich phases were evolved into grain boundaries from triple junctions by a Dy buffer layer deposition, resulting in a well magnetic decoupling of Nd2Fe14B neighboring grains. Through capping a Dy layer, the environment of grain boundaries had been improved and some Dy diffused into Nd2Fe14B phases, which contributed to the enhancement of magnetic performance.

  14. GaAs nanowires grown on Al-doped ZnO buffer layer

    NASA Astrophysics Data System (ADS)

    Haggren, Tuomas; Perros, Alexander; Dhaka, Veer; Huhtio, Teppo; Jussila, Henri; Jiang, Hua; Ruoho, Mikko; Kakko, Joona-Pekko; Kauppinen, Esko; Lipsanen, Harri

    2013-08-01

    We report a pathway to grow GaAs nanowires on a variety of substrates using a combination of atomic layer deposition and metallo-organic vapor phase epitaxy (MOVPE). GaAs nanowires were grown via MOVPE at 430-540 °C on an atomic-layer-deposited Al:ZnO buffer layer. The resulting nanowires were affected only by the properties of the buffer layer, allowing nanowire growth on a number of substrates that withstand ˜400 °C. The growth occurred in two phases: initial in-plane growth and subsequent out-plane growth. The nanowires grown exhibited a strong photoluminescence signal both at room temperature and at 12 K. The 12 K photoluminescence peak was at 1.47 eV, which was attributed to Zn autodoping from the buffer layer. The crystal structure was zincblende plagued with either twin planes or diagonal defect planes, which were related to perturbations in the seed particle during the growth. The used method combines substrates with variable properties to nanowire growth on a transparent and conductive Al:ZnO buffer layer.

  15. The role of buffer layers and double windows layers in a solar cell CZTS performances

    NASA Astrophysics Data System (ADS)

    Mebarkia, C.; Dib, D.; Zerfaoui, H.; Belghit, R.

    2016-07-01

    In the overall context of the diversification of the use of natural resources, the use of renewable energy including solar photovoltaic has become increasingly indispensable. As such, the development of a new generation of photovoltaic cells based on CuZnSnS4 (CZTS) looks promising. Cu2ZnSnS4 (CZTS) is a new film absorber, with good physical properties (band gap energy 1.4-1.6 eV with a large absorption coefficient over 104 cm-1). Indeed, the performance of these cells exceeded 30% in recent years. In the present paper, our work based on modeling and numerical simulation, we used SCAPS to study the performance of solar cells based on Cu2ZnSnS4 (CZTS) and thus evaluate the electrical efficiency η for typical structures of n-ZnO:Al / i-ZnO / n-CdS / p-CZTS and n-ITO / n-ZnO:Al / n-CdS /p-CZTS. Furthermore, the influence of the change of CdS by ZnSeand In2S3buffer layer was treated in this paper.

  16. CdS/CdTe thin-film solar cell with a zinc stannate buffer layer

    NASA Astrophysics Data System (ADS)

    Wu, X.; Sheldon, P.; Mahathongdy, Y.; Ribelin, R.; Mason, A.; Moutinho, H. R.; Coutts, T. J.

    1999-03-01

    This paper describes an improved CdS/CdTe polycrystalline thin-film solar-cell device structure that integrates a zinc stannate (Zn2SnO4 or ZTO) buffer layer between the transparent conductive oxide (TCO) layer and the CdS window layer. Zinc stannate films have a high bandgap, high transmittance, low absorptance, and low surface roughness. In addition, these films are chemically stable and exhibit higher resistivities that are roughly matched to that of the CdS window layer in the device structure. Preliminary device results have demonstrated that by integrating a ZTO buffer layer in both SnO2-based and Cd2SnO4 (CTO)-based CdS/CdTe devices, performance and reproducibility can be significantly enhanced.

  17. Exciton-blocking phosphonic acid-treated anode buffer layers for organic photovoltaics

    NASA Astrophysics Data System (ADS)

    Zimmerman, Jeramy D.; Song, Byeongseop; Griffith, Olga; Forrest, Stephen R.

    2013-12-01

    We demonstrate significant improvements in power conversion efficiency of bilayer organic photovoltaics by replacing the exciton-quenching MoO3 anode buffer layer with an exciton-blocking benzylphosphonic acid (BPA)-treated MoO3 or NiO layer. We show that the phosphonic acid treatment creates buffers that block up to 70% of excitons without sacrificing the hole extraction efficiency. Compared to untreated MoO3 anode buffers, BPA-treated NiO buffers exhibit a ˜ 25% increase in the near-infrared spectral response in diphenylanilo functionalized squaraine (DPSQ)/C60-based bilayer devices, increasing the power conversion efficiency under 1 sun AM1.5G simulated solar illumination from 4.8 ± 0.2% to 5.4 ± 0.3%. The efficiency can be further increased to 5.9 ± 0.3% by incorporating a highly conductive exciton blocking bathophenanthroline (BPhen):C60 cathode buffer. We find similar increases in efficiency in two other small-molecule photovoltaic systems, indicating the generality of the phosphonic acid-treated buffer approach to enhance exciton blocking.

  18. Near independence of OLED operating voltage on transport layer thickness

    SciTech Connect

    Swensen, James S.; Wang, Liang; Polikarpov, Evgueni; Rainbolt, James E.; Koech, Phillip K.; Cosimbescu, Lelia; Padmaperuma, Asanga B.

    2013-01-01

    We report organic light emitting devices (OLEDs) with weak drive voltage dependence on the thickness of the hole transport layer (HTL) for thicknesses up to 1150 Å using the N,N'-Bis(naphthalen-1-yl)-N,N'-bis(phenyl)-benzidine (α-NPD) and N,N'-bis(3-methyl phenyl)-N,N'-diphenyl-[1,1'-biphenyl]-4,4'diamine (TPD), both of which have hole mobilities in the range of 2 × 10-3 cm2V-1s-1. Lower mobility HTL materials show larger operating voltage dependence on thickness. The near independence of the operating voltage for high mobility transport material thickness was only observed when the energy barrier for charge injection into the transport material was minimized. To ensure low injection barriers, a thin film of 2-(3-(adamantan-1-yl)propyl)-3,5,6-trifluorotetracyanoquinodimethane (F3TCNQ-Adl) was cast from solution onto the ITO surface. These results indicate that thick transport layers can be integrated into OLED stacks without the need for bulk conductivity doping.

  19. Compression response of thick layer composite laminates with through-the-thickness reinforcement

    NASA Technical Reports Server (NTRS)

    Farley, Gary L.; Smith, Barry T.; Maiden, Janice

    1992-01-01

    Compression and compression-after-impact (CAI) tests were conducted on seven different AS4-3501-6 (0/90) 0.64-cm thick composite laminates. Four of the seven laminates had through-the-thickness (TTT) reinforcement fibers. Two TTT reinforcement methods, stitching and integral weaving, and two reinforcement fibers, Kevlar and carbon, were used. The remaining three laminates were made without TTT reinforcements and were tested to establish a baseline for comparison with the laminates having TTT reinforcement. Six of the seven laminates consisted of nine thick layers whereas the seventh material was composed of 46 thin plies. The use of thick-layer material has the potential for reducing structural part cost because of the reduced part count (layers of material). The compression strengths of the TTT reinforced laminates were approximately one half those of the materials without TTT reinforcements. However, the CAI strengths of the TTT reinforced materials were approximately twice those of materials without TTT reinforcements. The improvement in CAI strength is due to an increase in interlaminar strength produced by the TTT reinforcement. Stitched laminates had slightly higher compression and CAI strengths than the integrally woven laminates.

  20. Methods of producing free-standing semiconductors using sacrificial buffer layers and recyclable substrates

    DOEpatents

    Ptak, Aaron Joseph; Lin, Yong; Norman, Andrew; Alberi, Kirstin

    2015-05-26

    A method of producing semiconductor materials and devices that incorporate the semiconductor materials are provided. In particular, a method is provided of producing a semiconductor material, such as a III-V semiconductor, on a spinel substrate using a sacrificial buffer layer, and devices such as photovoltaic cells that incorporate the semiconductor materials. The sacrificial buffer material and semiconductor materials may be deposited using lattice-matching epitaxy or coincident site lattice-matching epitaxy, resulting in a close degree of lattice matching between the substrate material and deposited material for a wide variety of material compositions. The sacrificial buffer layer may be dissolved using an epitaxial liftoff technique in order to separate the semiconductor device from the spinel substrate, and the spinel substrate may be reused in the subsequent fabrication of other semiconductor devices. The low-defect density semiconductor materials produced using this method result in the enhanced performance of the semiconductor devices that incorporate the semiconductor materials.

  1. Quantification of cell-free layer thickness and cell distribution of blood by optical coherence tomography

    NASA Astrophysics Data System (ADS)

    Lauri, Janne; Bykov, Alexander; Fabritius, Tapio

    2016-04-01

    A high-speed optical coherence tomography (OCT) with 1-μm axial resolution was applied to assess the thickness of a cell-free layer (CFL) and a spatial distribution of red blood cells (RBC) next to the microchannel wall. The experiments were performed in vitro in a plain glass microchannel with a width of 2 mm and height of 0.2 mm. RBCs were suspended in phosphate buffered saline solution at the hematocrit level of 45%. Flow rates of 0.1 to 0.5 ml/h were used to compensate gravity induced CFL. The results indicate that OCT can be efficiently used for the quantification of CFL thickness and spatial distribution of RBCs in microcirculatory blood flow.

  2. Benzocyclobutene (BCB) Polymer as Amphibious Buffer Layer for Graphene Field-Effect Transistor.

    PubMed

    Wu, Yun; Zou, Jianjun; Huo, Shuai; Lu, Haiyan; Kong, Yuecan; Chen, Tangshen; Wu, Wei; Xu, Jingxia

    2015-08-01

    Owing to the scattering and trapping effects, the interfaces of dielectric/graphene or substrate/graphene can tailor the performance of field-effect transistor (FET). In this letter, the polymer of benzocyclobutene (BCB) was used as an amphibious buffer layer and located at between the layers of substrate and graphene and between the layers of dielectric and graphene. Interestingly, with the help of nonpolar and hydrophobic BCB buffer layer, the large-scale top-gated, chemical vapor deposited (CVD) graphene transistors was prepared on Si/SiO2 substrate, its cutoff frequency (fT) and the maximum cutoff frequency (fmax) of the graphene field-effect transistor (GFET) can be reached at 12 GHz and 11 GHz, respectively. PMID:26369142

  3. Influence of C or In buffer layer on photoluminescence behaviour of ultrathin ZnO film

    NASA Astrophysics Data System (ADS)

    Saravanan, K.; Jayalakshmi, G.; Krishnan, R.; Sundaravel, B.; Panigrahi, B. K.

    2016-09-01

    We study the effect of the indium or carbon buffer layer on the photoluminescence (PL) property of ZnO ultrathin films deposited on a Si(100) substrate. The surface morphology of the films obtained using scanning tunnelling microscopy shows spherical shaped ZnO nanoparticles of size ˜8 nm in ZnO/C/Si and ˜22 nm in ZnO/Si samples, while the ZnO/In/Si sample shows elliptical shaped ZnO particles. Further, the ZnO/C/Si sample shows densely packed ZnO nanoparticles in comparison with other samples. Strong band edge emission has been observed in the presence of In or C buffer layer, whereas the ZnO/Si sample exhibits poor PL emission. The influence of C and In buffer layers on the PL behaviour of ZnO films is studied in detail using temperature dependent PL measurements in the range of 4 K-300 K. The ZnO/C/Si sample exhibits a multi-fold enhancement in the PL emission intensity with well-resolved free and bound exciton emission lines. Our experimental results imply that the ZnO films deposited on the C buffer layer showed higher particle density and better exciton emission desired for optoelectronic applications.

  4. Sol-gel deposition of buffer layers on biaxially textured metal substances

    DOEpatents

    Shoup, Shara S.; Paranthamam, Mariappan; Beach, David B.; Kroeger, Donald M.; Goyal, Amit

    2000-01-01

    A method is disclosed for forming a biaxially textured buffer layer on a biaxially oriented metal substrate by using a sol-gel coating technique followed by pyrolyzing/annealing in a reducing atmosphere. This method is advantageous for providing substrates for depositing electronically active materials thereon.

  5. Interface characterization of nanometer scale CdS buffer layer in chalcopyrite solar cell

    NASA Astrophysics Data System (ADS)

    Lin, Shih-Hung; Cheng, Tzu-Huan

    2016-06-01

    The buffer layer of a chalcopyrite solar cell plays an important role in optical responses of open circuit voltage (V oc) and short circuit current (J sc). A CdS buffer layer is applicable on the nanometer scale owing to its high carrier concentration and n-type semiconductor behavior in chalcopyrite solar cells. The thin buffer layer also contributes to the passivation of the absorber surface to reduce defect recombination loss. Non-destructive metrological parameters such as photoluminescence (PL) intensity, external quantum efficiency (EQE), and depth-resolved photovoltage are used to characterize the interface quality of CdS/chalcopyrite. The defects and dangling bonds at the absorber surface will cause interface recombination and reduce the cell performance in build-in voltage distribution. Post annealing can improve Cd ion diffusion from the buffer layer to the absorber surface and reduce the density of defects and dangling bonds. After thermal annealing, the EQE, PL intensity, and minority carrier lifetime are improved.

  6. Effect of buffer layer on thermochromic performances of VO2 films fabricated by magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Zhu, Benqin; Tao, Haizheng; Zhao, Xiujian

    2016-03-01

    As a well-developed industrial fabricating method, magnetron sputtering technique has its distinct advantages for the large-scale production. In order to investigate the effect of buffer layer on the formation and thermochromic performances of VO2 films, using RF magnetron sputtering method, we fabricated three kinds of buffer layers SiO2, TiO2 and SnO2 on soda lime float-glass. Then according to the reactive DC magnetron sputtering method, VO2 films were deposited. Due to the restriction of heat treatment temperature when using soda lime float-glass as substrates, dense rutile phase TiO2 cannot be formed, leading to the formation of vanadium oxide compounds containing Na ions. When using SnO2 as buffer layer, we found that relatively high pure VO2 can be deposited more easily. In addition, compared with the effect of SiO2 buffer layer, we observed an enhanced visible transparency, a decreased infrared emissivity, which should be mainly originated from the modified morphology and/or the hetero-structured VO2/SnO2 interface.

  7. Growth and micro structural studies on Yittria Stabilized Zirconia (YSZ) and Strontium Titanate (STO) buffer layers

    SciTech Connect

    Srinivas, S.; Bhatnagar, A.K.; Pinto, R.

    1994-12-31

    Microstructure of Yittria Stabilized Zirconia (YSZ) and Strontium Titanate (STO) of radio frequency magnetron sputtered buffer layers was studied at various sputtering conditions on Si<100>, Sapphire and LaAlO{sub 3} <100> substrates. The effect of substrate temperatures upto 800 C and sputtering gas pressures in the range of 50 mTorr. of growth conditions was studied. The buffer layers of YSZ and STO showed a strong tendency for columnar structure with variation growth conditions. The buffer layers of YSZ and STO showed orientation. The tendency for columnar growth was observed above 15 mTorr sputtering gas pressure and at high substrate temperatures. Post annealing of these films in oxygen atmosphere reduced the oxygen deficiency and strain generated during growth of the films. Strong c-axis oriented superconducting YBa{sub 2}Cu{sub 9}O{sub 7-x} (YBCO) thin films were obtained on these buffer layers using pulsed laser ablation technique. YBCO films deposited on multilayers of YSZ and STO were shown to have better superconducting properties.

  8. Leidenfrost point and estimate of the vapour layer thickness

    NASA Astrophysics Data System (ADS)

    Gianino, Concetto

    2008-11-01

    In this article I describe an experiment involving the Leidenfrost phenomenon, which is the long lifetime of a water drop when it is deposited on a metal that is much hotter than the boiling point of water. The experiment was carried out with high-school students. The Leidenfrost point is measured and the heat laws are used to estimate the thickness of the vapour layer, d≈0.06 mm, which prevents the drop from touching the hotplate.

  9. High-Quality AgGaTe2 Layers on Si Substrates with Ag2Te Buffer Layers

    NASA Astrophysics Data System (ADS)

    Uruno, Aya; Kobayashi, Masakazu

    2016-09-01

    AgGaTe2 layers were successfully grown on Si substrates by the close-spaced sublimation method. The Si substrates were confirmed to be etched during AgGaTe2 layer growth when the layer was grown directly on the substrate. To eliminate melt-back etching, a buffer layer of Ag2Te was introduced. It was found that the Ag2Te buffer layer changed into the AgGaTe2 layer during the growth process, and a uniform AgGaTe2 layer with an abrupt interface was formed. Both the diffusion of Ga into Ag2Te and the growth of AgGaTe2 occurred simultaneously. It was confirmed that uniform AgGaTe2 layers could be formed without any traces of the Ag2Te layer or melt-back etching by tuning the growth parameters. A solar cell was also fabricated using the p-AgGaTe2/n-Si heterojunction. This solar cell showed conversion efficiency of approximately 3%.

  10. EXAMINATION OF DISLOCATIONS IN LATTICE-MISMATCHED GaInAs/BUFFER LAYER/GaAs FOR III-V PHOTOVOLTAICS

    SciTech Connect

    Levander, A.; Geisz, J.

    2007-01-01

    Dislocations act as sites for nonradiative electron/hole pair recombination, which reduces the effi ciency of photovoltaics. Lattice-matched materials can be grown on top of one another without forming a high density of dislocations. However, when the growth of lattice-mismatched (LMM) materials is attempted, many dislocations result from the relaxation of strain in the crystal structure. In an attempt to reduce the number of dislocations that propagate into a solar device when using LMM materials, a compositionally step-graded buffer is placed between the two LMM materials. In order to confi ne the dislocations to the buffer layer and therefore increase material quality and device effi ciency, the growth temperature and thickness of the buffer layer were varied. A GaInP compositionally graded buffer and GaInAs p-n junction were grown on a GaAs substrate in a metal-organic chemical vapor deposition (MOCVD) system. A multibeam optical stress sensor (MOSS) and X-ray diffraction (XRD) were used to characterize the strain in the epilayers. Electrical and optoelectronic properties were measured using a probe station and multimeter setup, solar simulator, and a quantum effi ciency instrument. It was determined that device functionality was highly dependent on the growth temperature of the graded buffer. As growth temperature increased, so did the dislocation density in the device despite an increase in the dislocation velocity, which should have increased the dislocation annihilation rate and the diffusion of dislocations to the edge of the crystal. The thickness of the graded buffer also affected device effi ciency with thinner samples performing poorly. The thinner graded buffer layers had high internal resistances from reduced carrier concentrations. In terms of effi ciency, the empirically derived recipe developed by the scientists at the National Renewable Energy Laboratory (NREL) produced the highest quality cells.

  11. Studies on the Properties of Organic Photovoltaic Cells Using TiOx and DMDCNQI as Double Buffer Layers.

    PubMed

    Kim, Gyu Min; Han, Seong Hun; Oh, Se Young

    2015-02-01

    Various types of n-type buffer layers have been used in organic electronic devices. These buffer layers turned out to expedite carrier injection and reduce series resistance, leading to good performance of organic electronic devices. In our current work, we have fabricated organic photovoltaic (OPV) cells consisting of ITO/PEDOT:PSS/P3HT:PCBM/TiOx/DMDCNQI/AI which were fabricated in the presence of air. To incorporate the individual advantages of each n-type buffer layer, a DMDCNQI and TiOx layers were inserted to act as n-type double buffer layers. This leads to an increase of short-circuit current (JSC) and fill factor (FF) with good stability, in comparison to P3HT:PCBM based conventional cells. The results imply that the structures of double buffer layers can provide possible alternative to achieving high performance and air durability.

  12. From front contact to back contact in cadmium telluride/cadmium sulfide solar cells: Buffer layer and interfacial layer

    NASA Astrophysics Data System (ADS)

    Roussillon, Yann

    Cadmium telluride (CdTe) polycrystalline thin film solar cells, with their near optimum direct band-gap of 1.4 eV matching almost perfectly the sun radiation spectrum, are a strong contender as a less expensive alternative, among photovoltaic materials, than the more commonly used silicon-based cells. Polycrystalline solar cells are usually deposited over large areas. Such devices often exhibit strong fluctuations (nonuniformities) in electronic properties, which originate from deposition and post-deposition processes, and are detrimental to the device performance. Therefore their effects need to be constrained. A new approach in this work was, when a CdS/CdTe solar cell is exposed to light and immersed in a proper electrolyte, fluctuations in surface potential can drive electrochemical reactions which result in a nonuniform interfacial layer that could balance the original nonuniformity. This approach improved the device efficiency for CdS/CdTe photovoltaic devices from 1--3% to 11--12%. Cadmium sulfide (CdS), used as a window layer and heterojunction partner to CdTe, is electrically inactive and absorb light energies above its band-gap of 2.4 eV. Therefore, to maximize the device efficiency, a thin US layer needs to be used. However, more defects, such as pinholes, are likely to be present in the film, leading to shunts. A resistive transparent layer, called buffer layer, is therefore deposited before CdS. A key observation was that the open-circuit voltage (Voc) for cells made using a buffer layer was high, around 800 mV, similar to cells without buffer layer after Cu doping. The standard p-n junction theory cannot explain this phenomena, therefore an alternative junction mechanism, similar to metal-insulator-semiconductor devices, was developed. Furthermore, alternative Cu-free back-contacts were used in conjunction with a buffer layer. The Voc of the devices was found to be dependent of the back contact used. This change occurs as the back-contact junction

  13. Improved performance of microcrystalline silicon solar cell with graded-band-gap silicon oxide buffer layer

    NASA Astrophysics Data System (ADS)

    Shi, Zhen-Liang; Ji, Yun; Yu, Wei; Yang, Yan-Bin; Cong, Ri-Dong; Chen, Ying-Juan; Li, Xiao-Wei; Fu, Guang-Sheng

    2015-07-01

    Microcrystalline silicon (μc-Si:H) solar cell with graded band gap microcrystalline silicon oxide (μc-SiOx:H) buffer layer is prepared by plasma enhanced chemical vapor deposition and exhibits improved performance compared with the cell without it. The buffer layer moderates the band gap mismatch by reducing the barrier of the p/i interface, which promotes the nucleation of the i-layer and effectively eliminates the incubation layer, and then enhances the collection efficiency of the cell in the short wavelength region of the spectrum. The p/i interface defect density also decreases from 2.2 × 1012 cm-2 to 5.0 × 1011 cm-2. This graded buffer layer allows to simplify the deposition process for the μc-Si:H solar cell application. Project supported by the Key Basic Research Project of Hebei Province, China (Grant Nos. 12963930D and 12963929D), the Natural Science Foundation of Hebei Province, China (Grant Nos. F2013201250 and E2012201059), and the Science and Technology Research Projects of the Education Department of Hebei Province, China (Grant No. ZH2012030).

  14. Magnetooptical and crystalline properties of sputtered garnet ferrite film on spinel ferrite buffer layer

    NASA Astrophysics Data System (ADS)

    Furuya, Akinori; Sasaki, Ai-ichiro; Morimura, Hiroki; Kagami, Osamu; Tanabe, Takaya

    2016-09-01

    The purpose of this study is to provide garnet films for volumetric magnetic holography. Volumetric magnetic holography usually employs an easily obtainable short-wavelength laser (visible light, not infrared light) with a large diffraction intensity. Bi-substituted garnet ferrite with a large Faraday rotation is promising for volumetric magnetic holography applications in the visible light region. However, a garnet film without a deteriorated layer must be obtained because a deteriorated layer (minute polycrystalline grains containing an amorphous phase) is formed during the initial deposition on a glass substrate. In particular, the required magnetooptical properties have not been obtained in a thin garnet film (100 nm or less) after annealing (1 h, 700 °C, oxygen atmosphere). Therefore, there is a need for excellent garnet films with the required magnetooptical (MO) properties even if the films are thin. By using a spinel ferrite buffer layer for garnet film deposition, we could obtain a thin garnet film with excellent MO properties. We determined the effect of the initial buffer layer on the crystallinity of the deposited garnet films by observing the film cross section. In addition, we undertook a qualitative estimation of the influence of the crystallinity and optical properties of the garnet film on a glass substrate with a spinel ferrite buffer layer.

  15. A study of the factors effecting layer thickness uniformity and layer breakup in microlayered coextruded films

    NASA Astrophysics Data System (ADS)

    Ghumman, Bhavjit Singh

    Microlayer coextrusion offers the opportunity to economically commercialize the production of nanometer thick film. A major obstacle towards commercialization is the non-uniform thickness of these layers and their breakup into droplets, which is also known as a scattering instability. Prior research had indicated a strong interaction between material properties and process parameters. Therefore, the focus of this research effort was to better understand and then identify the coextrusion parameters and material properties that governed the layer non-uniformity and scattering. Initial studies had indicated that there existed an interaction between the two extruders, which gave rise to pressure fluctuations and non-uniform flow. The interaction of the two extruders was studied by analyzing the pressure signals at the two extruders and the junction of the two streams. A response surface method was used to analyze the two extruders individually, the number of layer multiplying elements and finally the interaction between the two extruders and the effect they had on pressure, surging, flow rate and torque. Although the interaction of the two extruders did result in higher backpressures, it did not decrease the output. The output was independent of the screw speed of the other extruder, however it did influence the melting mechanics along the screw. The more shear sensitive PMMA showed a greater degree of sensitivity than the Newtonian PC. The influence of primary; coextrusion, and secondary; chill roll, processing on the final layer thickness was studied in a second set of experiments. For this purpose primary coextrusion process parameters such as screw speed ratio, die temperature and core melt temperature were changed and the effect on the layer thickness uniformity was studied. Similarly secondary process parameters such as nip gap and chill roll speed were also investigated. Thickness was measured using an Atomic Force Microscope (AFM). The screw speed ratio was the

  16. Tuning the interfacial hole injection barrier between p-type organic materials and Co using a MoO{sub 3} buffer layer

    SciTech Connect

    Wang Yuzhan; Wee, Andrew T. S.; Cao Liang; Qi Dongchen; Chen Wei; Gao Xingyu

    2012-08-01

    We demonstrate that the interfacial hole injection barrier {Delta}{sub h} between p-type organic materials (i.e., CuPc and pentacene) and Co substrate can be tuned by the insertion of a MoO{sub 3} buffer layer. Using ultraviolet photoemission spectroscopy, it was found that the introduction of MoO{sub 3} buffer layer effectively reduces the hole injection barrier from 0.8 eV to 0.4 eV for the CuPc/Co interface, and from 1.0 eV to 0.4 eV for the pentacene/Co interface, respectively. In addition, by varying the thickness of the buffer, the tuning effect of {Delta}{sub h} is shown to be independent of the thickness of MoO{sub 3} interlayer at both CuPc/Co and pentacene/Co interfaces. This Fermi level pinning effect can be explained by the integer charge-transfer model. Therefore, the MoO{sub 3} buffer layer has the potential to be applied in p-type organic spin valve devices to improve the device performance via reducing the interfacial hole injection barrier.

  17. Ultraviolet-ozone-treated PEDOT:PSS as anode buffer layer for organic solar cells.

    PubMed

    Su, Zisheng; Wang, Lidan; Li, Yantao; Zhao, Haifeng; Chu, Bei; Li, Wenlian

    2012-08-17

    Ultraviolet-ozone-treated poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS)was used as the anode buffer layer in copper phthalocyanine (CuPc)/fullerene-based solar cells. The power conversion efficiency of the cells with appropriated UV-ozone treatment was found to increase about 20% compared to the reference cell. The improved performance is attributed to the increased work function of the PEDOT:PSS layer, which improves the contact condition between PEDOT:PSS and CuPc, hence increasing the extraction efficiency of the photogenerated holes and decreasing the recombination probability of holes and electrons in the active organic layers.

  18. Solution-processed In2S3 buffer layer for chalcopyrite thin film solar cells

    NASA Astrophysics Data System (ADS)

    Wang, Lan; Lin, Xianzhong; Ennaoui, Ahmed; Wolf, Christian; Lux-Steiner, Martha Ch.; Klenk, Reiner

    2016-02-01

    We report a route to deposit In2S3 thin films from air-stable, low-cost molecular precursor inks for Cd-free buffer layers in chalcopyrite-based thin film solar cells. Different precursor compositions and processing conditions were studied to define a reproducible and robust process. By adjusting the ink properties, this method can be applied in different printing and coating techniques. Here we report on two techniques, namely spin-coating and inkjet printing. Active area efficiencies of 12.8% and 12.2% have been achieved for In2S3-buffered solar cells respectively, matching the performance of CdS-buffered cells prepared with the same batch of absorbers.

  19. Coincident site lattice-matched growth of semiconductors on substrates using compliant buffer layers

    DOEpatents

    Norman, Andrew

    2016-08-23

    A method of producing semiconductor materials and devices that incorporate the semiconductor materials are provided. In particular, a method is provided of producing a semiconductor material, such as a III-V semiconductor, on a silicon substrate using a compliant buffer layer, and devices such as photovoltaic cells that incorporate the semiconductor materials. The compliant buffer material and semiconductor materials may be deposited using coincident site lattice-matching epitaxy, resulting in a close degree of lattice matching between the substrate material and deposited material for a wide variety of material compositions. The coincident site lattice matching epitaxial process, as well as the use of a ductile buffer material, reduce the internal stresses and associated crystal defects within the deposited semiconductor materials fabricated using the disclosed method. As a result, the semiconductor devices provided herein possess enhanced performance characteristics due to a relatively low density of crystal defects.

  20. Performance of organic photovoltaics using an ytterbium trifluoride n-type buffer layer

    NASA Astrophysics Data System (ADS)

    Ji, Chan Hyuk; Jang, Ji Min; Oh, Se Young

    2016-03-01

    Ytterbium trifluoride (YbF3) was used as an n-type cathode buffer layer in conventional poly(3-hexylthiophene):[6,6]-phenyl C61 butyric acid methyl ester (P3HT:PC60BM) bulk heterojunction (BHJ) organic photovoltaic cells. This buffer layer acts as an electron-transport layer and improves the open circuit voltage ( V oc), power conversion efficiency (PCE), and interfacial durability of the device. The physical properties and performance of the device were studied using impedance spectroscopy, photocurrent measurements, ultraviolet photoelectron spectroscopy, and atomic force microscopy. The PCE reached to 3.2% with a 65% fill factor under 1 sun irradiation. The PCE decreased to half of its original value after 120 h at room temperature in air or 24 h at 70°C in air. Comparison with Yb and TiOx cathode buffer layers reveals that YbF3 has superior performance and longevity. These findings suggest that YbF3 has the potential to replace costly device encapsulation. [Figure not available: see fulltext.

  1. Electron dynamics of the buffer layer and bilayer graphene on SiC

    SciTech Connect

    Shearer, Alex J.; Caplins, Benjamin W.; Suich, David E.; Harris, Charles B.; Johns, James E.; Hersam, Mark C.

    2014-06-09

    Angle- and time-resolved two-photon photoemission (TPPE) was used to investigate electronic states in the buffer layer of 4H-SiC(0001). An image potential state (IPS) series was observed on this strongly surface-bound buffer layer, and dispersion measurements indicated free-electron-like behavior for all states in this series. These results were compared with TPPE taken on bilayer graphene, which also show the existence of a free-electron-like IPS series. Lifetimes for the n = 2, and n = 3 states were obtained from time-resolved TPPE; slightly increased lifetimes were observed in the bilayer graphene sample for the n = 2 the n = 3 states. Despite the large band gap of graphene at the center of the Brillouin zone, the lifetime results demonstrate that the graphene layers do not behave as a simple tunneling barrier, suggesting that the buffer layer and graphene overlayers play a direct role in the decay of IPS electrons.

  2. Tensile strength of thin resin composite layers as a function of layer thickness.

    PubMed

    Alster, D; Feilzer, A J; De Gee, A J; Davidson, C L

    1995-11-01

    As a rule, cast restorations do not allow for free curing contraction of the resin composite luting cement. In a rigid situation, the resulting contraction stress is inversely proportional to the resin layer thickness. Adhesive technology has demonstrated, however, that thin joints may be considerably stronger than thicker ones. To investigate the effects of layer thickness and contraction stress on the tensile strength of resin composite joints, we cured cylindrical samples of a chemically initiated resin composite (Clearfil F2) in restrained conditions and subsequently loaded them in tension. The samples had a diameter of 5.35 mm and thicknesses of 50, 100, 200, 300, 400, 500, 600, and 700 microns, 1.4 mm, or 2.7 mm. None of the samples fractured due to contraction stress prior to tensile loading. Tensile strength decreased gradually from 62 +/- 2 MPa for the 50-microns layer to 31 +/- 4 MPa for the 2.7-mm layer. The failures were exclusively cohesive in resin for layers between 50 and 400 microns thick. Between 500 and 700 microns, the failures were cohesive or mixed adhesive/cohesive, while the 1.4- and 2.7-mm layers always failed in a mixed adhesive/cohesive mode. For the resin composite tested, the contraction stress did not endanger the cohesive strength. It was concluded that if adhesion to tooth structure were improved, thinner adhesive joints might enhance the clinical success of luted restorations.

  3. Reel-to-reel deposition of epitaxial double-sided MgO buffer layers for coated conductors

    NASA Astrophysics Data System (ADS)

    Xue, Yan; Xiong, Jie; Zhang, Yahui; Zhang, Fei; Zhao, Rui-Peng; Hui, Wang; Wang, Quiling; Cheng, Guo; Zhao, Xiao-Hui; Tao, Bo-Wan

    2016-06-01

    We have successfully employed a double-sided process to deposit MgO buffer layers on both sides of amorphous Y2O3 surface for double-sided YBa2Cu3O7-δ (YBCO) coated conductors (CCs) for the first time, the structure of which is of great prospect to improve the performance and cut the production cost. The biaxial textures of MgO buffer layer are noticeably affected by the ion energy and film thickness, which is demonstrated by X-ray diffraction. The best biaxial texture of double-sided MgO films shows ω-scan of (002) MgO and Φ-scan of (220) MgO yield full width at half maximum values of 4° and 7.8° for one side, respectively, as well as 3.5° and 6.7° for the other side. The subsequent double-sided YBCO films are deposited on the as-prepared MgO template with entire critical current of over 300 A/cm for both sides.

  4. Enhancement of the quality of InAsSb epilayers using InAsSb graded and InSb buffer layers grown by hot wall epitaxy

    NASA Astrophysics Data System (ADS)

    Nakamura, S.; Jayavel, P.; Kobayashi, Y.; Arafune, K.; Koyama, T.; Kumagawa, M.; Hayakawa, Y.

    2005-10-01

    We have investigated the structural and electrical properties of InAsxSb1-x epilayers grown on GaAs(0 0 1) substrates by hot wall epitaxy. The epilayers were grown on an InAsSb graded layer and an InSb buffer layer. The arsenic composition (x) of the InAsxSb1-x epilayer was calculated using x-ray diffraction and found to be 0.5. The graded layers were grown with As temperature gradients of 2 and 0.5 °C min-1. The three-dimensional (3D) island growth due to the large lattice mismatch between InAsSb and GaAs was observed by scanning electron microscopy. As the thicknesses of the InAsSb graded layer and the InSb buffer layer are increased, a transition from 3D island growth to two-dimensional plateau-like growth is observed. The x-ray rocking curve measurements indicate that full-width at half-maximum values of the epilayers were decreased by using the graded and buffer layers. A dramatic enhancement of the electron mobility of the grown layers was observed by Hall effect measurements.

  5. Usage of Neural Network to Predict Aluminium Oxide Layer Thickness

    PubMed Central

    Michal, Peter; Vagaská, Alena; Gombár, Miroslav; Kmec, Ján; Spišák, Emil; Kučerka, Daniel

    2015-01-01

    This paper shows an influence of chemical composition of used electrolyte, such as amount of sulphuric acid in electrolyte, amount of aluminium cations in electrolyte and amount of oxalic acid in electrolyte, and operating parameters of process of anodic oxidation of aluminium such as the temperature of electrolyte, anodizing time, and voltage applied during anodizing process. The paper shows the influence of those parameters on the resulting thickness of aluminium oxide layer. The impact of these variables is shown by using central composite design of experiment for six factors (amount of sulphuric acid, amount of oxalic acid, amount of aluminium cations, electrolyte temperature, anodizing time, and applied voltage) and by usage of the cubic neural unit with Levenberg-Marquardt algorithm during the results evaluation. The paper also deals with current densities of 1 A·dm−2 and 3 A·dm−2 for creating aluminium oxide layer. PMID:25922850

  6. Neutron supermirrors: an accurate theory for layer thickness computation

    NASA Astrophysics Data System (ADS)

    Bray, Michael

    2001-11-01

    We present a new theory for the computation of Super-Mirror stacks, using accurate formulas derived from the classical optics field. Approximations are introduced into the computation, but at a later stage than existing theories, providing a more rigorous treatment of the problem. The final result is a continuous thickness stack, whose properties can be determined at the outset of the design. We find that the well-known fourth power dependence of number of layers versus maximum angle is (of course) asymptotically correct. We find a formula giving directly the relation between desired reflectance, maximum angle, and number of layers (for a given pair of materials). Note: The author of this article, a classical opticist, has limited knowledge of the Neutron world, and begs forgiveness for any shortcomings, erroneous assumptions and/or misinterpretation of previous authors' work on the subject.

  7. All solution processable organic photovoltaic cells using DMDCNQI as an organic N-type buffer layer.

    PubMed

    Yang, Eui Yeol; So, Byoung Min; Chung, Chan Moon; Oh, Se Young

    2012-01-01

    Organic photovoltaic cells consisting of ITO/PEDOT-PSS/P3HT:PCBM/TiO(x)/DMDCNQI/Al have been fabricated by using dip-coated DMDCNQI layer as a cathode buffer material. We have investigated the physical effects of charge transfer complex and wettability of DMDCNQI between TiO(x)/P3HT:PCBM layer and Al cathode electrode on the performance of organic photovoltaic cell. The photovoltaic cell fabricated with a dip-coated DMDCNQI layer exhibited almost similar performance compared to the device using conventional evaporated DMDCNQI layer. Especially, the power conversion efficiency of the prepared organic photovoltaic cell using TiO(x)/DMDCNQI layer was improved to 3.1%, which is mainly due to the decrease in the low contact resistance of organic-metal interface.

  8. Selective growth of Pb islands on graphene/SiC buffer layers

    SciTech Connect

    Liu, X. T.; Miao, Y. P.; Ma, D. Y.; Hu, T. W.; Ma, F. E-mail: kwxu@mail.xjtu.edu.cn; Chu, Paul K.; Xu, K. W. E-mail: kwxu@mail.xjtu.edu.cn

    2015-02-14

    Graphene is fabricated by thermal decomposition of silicon carbide (SiC) and Pb islands are deposited by Pb flux in molecular beam epitaxy chamber. It is found that graphene domains and SiC buffer layer coexist. Selective growth of Pb islands on SiC buffer layer rather than on graphene domains is observed. It can be ascribed to the higher adsorption energy of Pb atoms on the 6√(3) reconstruction of SiC. However, once Pb islands nucleate on graphene domains, they will grow very large owing to the lower diffusion barrier of Pb atoms on graphene. The results are consistent with first-principle calculations. Since Pb atoms on graphene are nearly free-standing, Pb islands grow in even-number mode.

  9. Ultrathin Polyaniline-based Buffer Layer for Highly Efficient Polymer Solar Cells with Wide Applicability

    PubMed Central

    Zhao, Wenchao; Ye, Long; Zhang, Shaoqing; Fan, Bin; Sun, Mingliang; Hou, Jianhui

    2014-01-01

    Interfacial buffer layers often attribute the improved device performance in organic optoelectronic device. Herein, a water-soluble hydrochloric acid doped polyanilines (HAPAN) were utilized as p-type electrode buffer layer in highly efficient polymer solar cells (PSC) based on PBDTTT-EFT and several representative polymers. The PBDTTT-EFT-based conventional PSC featuring ultrathin HAPAN (1.3 nm) delivered high PCE approximately 9%, which is one of the highest values among conventional PSC devices. Moreover, ultrathin HAPAN also exhibited wide applicability in a variety of efficient photovoltaic polymers including PBDTTT-C-T, PTB7, PBDTBDD, PBTTDPP-T, PDPP3T and P3HT. The excellent performances were originated from the high transparency, small film roughness and suitable work function. PMID:25300365

  10. Ultrasonic eggshell thickness measurement for selection of layers.

    PubMed

    Kibala, Lucyna; Rozempolska-Rucinska, Iwona; Kasperek, Kornel; Zieba, Grzegorz; Lukaszewicz, Marek

    2015-10-01

    This study aimed to develop a methodology for using ultrasonic technology (USG) to record eggshell thickness for selection of layers. Genetic correlations between eggshell strength and its thickness have been reported to be around 0.8, making shell thickness a selection index candidate element. Applying ultrasonic devices to measure shell thickness leaves an egg intact for further handling. In this study, eggs from 2 purebred populations of Rhode Island White (RIW) and Rhode Island Red (RIR) hens were collected on a single day in the 33rd week of the farm laying calendar from 2,414 RIR and 4,525 RIW hens. Beginning from the large end of the egg, measurements were taken at 5 latitudes: 0º (USG0), 45º (USG45), 90º (USG90), 135º (USG135), and 180º (USG180). To estimate the repeatability of readings, measurements were repeated at each parallel on 3 meridians. Electronic micrometer measurement ( EMM: ) were taken with an electronic micrometer predominantly at the wider end of eggs from 2,397 RIR and 4,447 RIW hens. A multiple-trait statistical model fit the fixed effect of year-of-hatch × hatch-within-year, and random effects due to repeated measurements (except EMM) and an animal's additive genetic component. The shell was thinnest in the region where chicks break it upon hatching (USG0, USG45). Heritabilities of shell thickness in different regions of the shell ranged from 0.09 to 0.19 (EMM) in RIW and from 0.12 to 0.23 (EMM) in RIR and were highest for USG45 and USG0. Because the measurement repeatabilities were all above 0.90, our recommendation for balancing egg strength against hatching ease is to take a single measurement of USG45. Due to high positive genetic correlations between shell thickness in different regions of the shell its thickness in the pointed end region will be modified accordingly, in response to selection for USG45.

  11. Estimating Active Layer Thickness from Remotely Sensed Surface Deformation

    NASA Astrophysics Data System (ADS)

    Liu, L.; Schaefer, K. M.; Zhang, T.; Wahr, J. M.

    2010-12-01

    We estimate active layer thickness (ALT) from remotely sensed surface subsidence during thawing seasons derived from interferometric synthetic aperture radar (InSAR) measurements. Ground ice takes up more volume than ground water, so as the soil thaws in summer and the active layer deepens, the ground subsides. The volume of melted ground water during the summer thaw determines seasonal subsidence. ALT is defined as the maximum thaw depth at the end of a thawing season. By using InSAR to measure surface subsidence between the start and end of summer season, one can estimate the depth of thaw over a large area (typically 100 km by 100 km). We developed an ALT retrieval algorithm integrating InSAR-derived surface subsidence, observed soil texture, organic matter content, and moisture content. We validated this algorithm in the continuous permafrost area on the North Slope of Alaska. Based on InSAR measurements using ERS-1/2 SAR data, our estimated values match in situ measurements of ALT within 1--10 cm at Circumpolar Active Layer Monitoring (CALM) sites within the study area. The active layer plays a key role in land surface processes in cold regions. Current measurements of ALT using mechanical probing, frost/thaw tubes, or inferred from temperature measurements are of high quality, but limited in spatial coverage. Using InSAR to estimate ALT greatly expands the spatial coverage of ALT observations.

  12. ZnS/Zn(O,OH)S-based buffer layer deposition for solar cells

    DOEpatents

    Bhattacharya, Raghu N.

    2009-11-03

    The invention provides CBD ZnS/Zn(O,OH)S and spray deposited ZnS/Zn(O,OH)S buffer layers prepared from a solution of zinc salt, thiourea and ammonium hydroxide dissolved in a non-aqueous/aqueous solvent mixture or in 100% non-aqueous solvent. Non-aqueous solvents useful in the invention include methanol, isopropanol and triethyl-amine. One-step deposition procedures are described for CIS, CIGS and other solar cell devices.

  13. Tracing the sub-photospheric layers of optically thick winds

    NASA Astrophysics Data System (ADS)

    Graefener, G.

    2013-06-01

    Towards the end of their evolution hot massive stars develop strong stellar winds and appear as emission line stars, such as WR stars or LBVs. The quanitative description of the mass loss in these important pre-SN phases is hampered by unkowns such as wind clumping and porosity, and by an incomplete theoretical understanding of optically thick stellar winds. Even the stellar radii in these phases are badly undestood as they are often variable (LBVs), or deviate from theoretical expectations (WR stars). Here we present a new semi-empirical method that helps to tackle these problems. By analysing a large sample of Galactic WR stars we gain information about deep wind layers near the sonic point which are otherwise not directly observable. We find evidence that these layers are clumped, with clumping factors comparable to the ones observed in the winds of WR stars. Moreover, density and temperature near the sonic point seem to follow a relation which is ubiqitous for optically thick winds, and which may be responsible for the peculiar radius properties of these objects.

  14. High performance polymer solar cells with as-prepared zirconium acetylacetonate film as cathode buffer layer.

    PubMed

    Tan, Zhan'ao; Li, Shusheng; Wang, Fuzhi; Qian, Deping; Lin, Jun; Hou, Jianhui; Li, Yongfang

    2014-01-01

    Low-work-function active metals are commonly used as cathode in polymer solar cells (PSCs), but sensitivity of the active metals towards moisture and oxygen results in poor stability of the devices. Therefore, solution-proceessable and stable cathode buffer layer is of great importance for the application of PSCs. Here we demonstrate high performance PSCs by employing as-prepared zirconium acetylacetonate (a-ZrAcac) film spin-cast from its ethanol solution as cathode buffer layer. The PSCs based on a low bandgap polymer PBDTBDD as donor and PC60BM as acceptor with a-ZrAcac/Al cathode demonstrated an average power conversion efficiency (PCE) of 8.75% which is significantly improved than that of the devices with traditional Ca/Al cathode. The improved photovoltaic performance is benefitted from the decreased series resistance and enhanced light harvest of the PSCs with the a-ZrAcac/Al cathode. The results indicate that a-ZrAcac is a promising high performance cathode buffer layer for fabricating large area flexible PSCs. PMID:24732976

  15. Performance enhancement in inverted solar cells by interfacial modification of ZnO nanoparticle buffer layer.

    PubMed

    Ambade, Swapnil B; Ambade, Rohan B; Kim, Seojin; Park, Hanok; Yoo, Dong Jin; Leel, Soo-Hyoung

    2014-11-01

    Polymer solar cells (PSCs) have attracted increasing attention in recent years. The rapid progress and mounting interest suggest the feasibility of PSC commercialization. However, critical issues such as stability and the weak nature of their interfaces posses quite a challenge. In the context of improving stability, PSCs with inverted geometry consising of inorganic oxide layer acting as an n-buffer offer quite the panacea. Zinc oxide (ZnO) is one of the most preferred semiconducting wide band gap oxides as an efficient cathode layer that effectively extracts and transports photoelectrons from the acceptor to the conducting indium-doped tin oxide (ITO) due to its high conductivity and transparency. However, the existence of a back charge transfer from metal oxides to electron-donating conjugated polymer and poor contact with the bulk heterojunction (BHJ) active layer results in serious interfacial recombination and leads to relatively low photovoltaic performance. One approach to improving the performance and charge selectivity of these types of inverted devices consists of modifying the interface between the inorganic metal oxide (e.g., ZnO) and organic active layer using a sub-monolayer of interfacial materials (e.g., functional dyes). In this work, we demonstrate that the photovoltaic parameters of inverted solar cells comprising a thin overlayer of functional dyes over ZnO nanoparticle as an n-buffer layer are highly influenced by the anchoring groups they possess. While an inverted PSC containing an n-buffer of only ZnO exhibited an overall power conversion efficiency (PCE) of 2.87%, the devices with an interlayer of dyes containing functional cyano-carboxylic, cyano-cyano, and carboxylic groups exhibited PCE of 3.52%, 3.39%, and 3.21%, respectively, due to increased forward charge collection resulting from enhanced electronic coupling between the ZnO and BHJ active layers. PMID:25958563

  16. Power Conversion Efficiency and Device Stability Improvement of Inverted Perovskite Solar Cells by Using a ZnO:PFN Composite Cathode Buffer Layer.

    PubMed

    Jia, Xiaorui; Zhang, Lianping; Luo, Qun; Lu, Hui; Li, Xueyuan; Xie, Zhongzhi; Yang, Yongzhen; Li, Yan-Qing; Liu, Xuguang; Ma, Chang-Qi

    2016-07-20

    We have demonstrated in this article that both power conversion efficiency (PCE) and performance stability of inverted planar heterojunction perovskite solar cells can be improved by using a ZnO:PFN nanocomposite (PFN: poly[(9,9-bis(3'-(N,N-dimethylamion)propyl)-2,7-fluorene)-alt-2,7-(9,9-dioctyl)-fluorene]) as the cathode buffer layer (CBL). This nanocomposite could form a compact and defect-less CBL film on the perovskite/PC61BM surface (PC61BM: phenyl-C61-butyric acid methyl ester). In addition, the high conductivity of the nanocomposite layer makes it works well at a layer thickness of 150 nm. Both advantages of the composite layer are helpful in reducing interface charge recombination and improving device performance. The power conversion efficiency (PCE) of the best ZnO:PFN CBL based device was measured to be 12.76%, which is higher than that of device without CBL (9.00%), or device with ZnO (7.93%) or PFN (11.30%) as the cathode buffer layer. In addition, the long-term stability is improved by using ZnO:PFN composite cathode buffer layer when compare to that of the reference cells. Almost no degradation of open circuit voltage (VOC) and fill factor (FF) was found for the device having ZnO:PFN, suggesting that ZnO:PFN is able to stabilize the interface property and consequently improve the solar cell performance stability.

  17. UV-ozone-treated ultra-thin NaF film as anode buffer layer on organic light emitting devices.

    PubMed

    Chen, Yu-Cheng; Kao, Po-Ching; Chu, Sheng-Yuan

    2010-06-21

    An ultra-thin NaF film was thermally deposited between ITO and NPB as the buffer layer and then treated with the ultraviolet (UV) ozone, in the fabrication of organic light emitting diodes (ITO/NaF/NPB/Alq(3)/LiF/Al) to study its effect on hole-injection properties. The treatment drastically transforms the role of NaF film from hole-blocking to hole-injecting. This transformation is elucidated using hole-only devices, energy band measurement, surface energy, surface polarity, and X-ray photoelectron spectra. With the optimal thickness (3 nm) of the UV-ozone-treated NaF layer, the device performance is significantly improved, with a turn-on voltage, maximum luminance, and maximum current efficiency of 2.5 V, 15700 cd/m(2), and 4.9 cd/A, respectively. Results show that NaF film is not only a hole-blocking layer, but also a promising hole-injecting layer after UV-ozone treatment.

  18. UV-ozone-treated ultra-thin NaF film as anode buffer layer on organic light emitting devices.

    PubMed

    Chen, Yu-Cheng; Kao, Po-Ching; Chu, Sheng-Yuan

    2010-06-21

    An ultra-thin NaF film was thermally deposited between ITO and NPB as the buffer layer and then treated with the ultraviolet (UV) ozone, in the fabrication of organic light emitting diodes (ITO/NaF/NPB/Alq(3)/LiF/Al) to study its effect on hole-injection properties. The treatment drastically transforms the role of NaF film from hole-blocking to hole-injecting. This transformation is elucidated using hole-only devices, energy band measurement, surface energy, surface polarity, and X-ray photoelectron spectra. With the optimal thickness (3 nm) of the UV-ozone-treated NaF layer, the device performance is significantly improved, with a turn-on voltage, maximum luminance, and maximum current efficiency of 2.5 V, 15700 cd/m(2), and 4.9 cd/A, respectively. Results show that NaF film is not only a hole-blocking layer, but also a promising hole-injecting layer after UV-ozone treatment. PMID:20588585

  19. Numerical Analysis of In2S3 Layer Thickness, Band Gap and Doping Density for Effective Performance of a CIGS Solar Cell Using SCAPS

    NASA Astrophysics Data System (ADS)

    Khoshsirat, Nima; Md Yunus, Nurul Amziah

    2016-11-01

    The effect of indium sulfide buffer layer's geometrical and electro-optical properties on the Copper-Indium-Gallium-diSelenide solar cell performance using numerical simulation is investigated. The numerical simulation software used is a solar cell capacitance simulator in (SCAPS). The innermost impacts of buffer layer thickness, band gap, and doping density on the cells output parameters such as open circuit voltage, short circuit current density, fill factor, and the efficiency were extensively simulated. The results show that the cell efficiency, which was innovatively illustrated as a two-dimensional contour plot function, depends on the buffer layer electron affinity and doping density by keeping all the other parameters at a steady state. The analysis, which was made from this numerical simulation, has revealed that the optimum electron affinity is to be 4.25 ± 0.2 eV and donor density of the buffer layer is over 1× 10 ^{17} cm^{-3}. It is also shown that the cell with an optimum thin buffer layer has higher performance and efficiency due to the lower optical absorption of the buffer layer.

  20. Thickness dependence of structural and transport properties of Co-doped BaFe2As2 on Fe buffered MgO substrates

    NASA Astrophysics Data System (ADS)

    Iida, Kazumasa; Hänisch, Jens; Trommler, Sascha; Haindl, Silvia; Kurth, Fritz; Hühne, Ruben; Schultz, Ludwig; Holzapfel, Bernhard

    2011-12-01

    We have investigated the influence of the superconducting layer thickness, d, on the structural and transport properties of Co-doped BaFe2As2 films deposited on Fe buffered MgO substrates by pulsed laser deposition. The superconducting transition temperature and the texture quality of Co-doped BaFe2As2 films improve with increasing d due to a gradual relief of the tensile strain. For d >= 90 nm an additional 110 textured component of Co-doped BaFe2As2 was observed, which leads to an upward shift in the angle-dependent critical current density at H \\parallel c . These results indicate that the grain boundaries created by the 110 textured component may contribute to the c-axis pinning.

  1. Epitaxial strontium titanate films grown by atomic layer deposition on SrTiO{sub 3}-buffered Si(001) substrates

    SciTech Connect

    McDaniel, Martin D.; Posadas, Agham; Ngo, Thong Q.; Dhamdhere, Ajit; Smith, David J.; Demkov, Alexander A.; Ekerdt, John G.

    2013-01-15

    Epitaxial strontium titanate (STO) films have been grown by atomic layer deposition (ALD) on Si(001) substrates with a thin STO buffer layer grown by molecular beam epitaxy (MBE). Four unit cells of STO grown by MBE serve as the surface template for ALD growth. The STO films grown by ALD are crystalline as-deposited with minimal, if any, amorphous SiO{sub x} layer at the STO-Si interface. The growth of STO was achieved using bis(triisopropylcyclopentadienyl)-strontium, titanium tetraisopropoxide, and water as the coreactants at a substrate temperature of 250 Degree-Sign C. In situ x-ray photoelectron spectroscopy (XPS) analysis revealed that the ALD process did not induce additional Si-O bonding at the STO-Si interface. Postdeposition XPS analysis also revealed sporadic carbon incorporation in the as-deposited films. However, annealing at a temperature of 250 Degree-Sign C for 30 min in moderate to high vacuum (10{sup -6}-10{sup -9} Torr) removed the carbon species. Higher annealing temperatures (>275 Degree-Sign C) gave rise to a small increase in Si-O bonding, as indicated by XPS, but no reduced Ti species were observed. X-ray diffraction revealed that the as-deposited STO films were c-axis oriented and fully crystalline. A rocking curve around the STO(002) reflection gave a full width at half maximum of 0.30 Degree-Sign {+-} 0.06 Degree-Sign for film thicknesses ranging from 5 to 25 nm. Cross-sectional transmission electron microscopy revealed that the STO films were continuous with conformal growth to the substrate and smooth interfaces between the ALD- and MBE-grown STO. Overall, the results indicate that thick, crystalline STO can be grown on Si(001) substrates by ALD with minimal formation of an amorphous SiO{sub x} layer using a four-unit-cell STO buffer layer grown by MBE to serve as the surface template.

  2. Thickness-induced structural phase transformation of layered gallium telluride.

    PubMed

    Zhao, Q; Wang, T; Miao, Y; Ma, F; Xie, Y; Ma, X; Gu, Y; Li, J; He, J; Chen, B; Xi, S; Xu, L; Zhen, H; Yin, Z; Li, J; Ren, J; Jie, W

    2016-07-28

    The thickness-dependent electronic states and physical properties of two-dimensional materials suggest great potential applications in electronic and optoelectronic devices. However, the enhanced surface effect in ultra-thin materials might significantly influence the structural stability, as well as the device reliability. Here, we report a spontaneous phase transformation of gallium telluride (GaTe) that occurred when the bulk was exfoliated to a few layers. Transmission electron microscopy (TEM) results indicate a structural variation from a monoclinic to a hexagonal structure. Raman spectra suggest a critical thickness for the structural transformation. First-principle calculations and thermodynamic analysis show that the surface energy and the interlayer interaction compete to dominate structural stability in the thinning process. A two-stage transformation process from monoclinic (m) to tetragonal (T) and then from tetragonal to hexagonal (h) is proposed to understand the phase transformation. The results demonstrate the crucial role of interlayer interactions in the structural stability, which provides a phase engineering strategy for device applications. PMID:27198938

  3. Thickness-induced structural phase transformation of layered gallium telluride.

    PubMed

    Zhao, Q; Wang, T; Miao, Y; Ma, F; Xie, Y; Ma, X; Gu, Y; Li, J; He, J; Chen, B; Xi, S; Xu, L; Zhen, H; Yin, Z; Li, J; Ren, J; Jie, W

    2016-07-28

    The thickness-dependent electronic states and physical properties of two-dimensional materials suggest great potential applications in electronic and optoelectronic devices. However, the enhanced surface effect in ultra-thin materials might significantly influence the structural stability, as well as the device reliability. Here, we report a spontaneous phase transformation of gallium telluride (GaTe) that occurred when the bulk was exfoliated to a few layers. Transmission electron microscopy (TEM) results indicate a structural variation from a monoclinic to a hexagonal structure. Raman spectra suggest a critical thickness for the structural transformation. First-principle calculations and thermodynamic analysis show that the surface energy and the interlayer interaction compete to dominate structural stability in the thinning process. A two-stage transformation process from monoclinic (m) to tetragonal (T) and then from tetragonal to hexagonal (h) is proposed to understand the phase transformation. The results demonstrate the crucial role of interlayer interactions in the structural stability, which provides a phase engineering strategy for device applications.

  4. Growth of high-quality InN thin films on InGaN buffer layer by plasma-assisted molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Yang, Chen-Chi; Lo, Ikai; Shih, Cheng-Hung; Hu, Chia-Hsuan; Wang, Ying-Chieh; Lin, Yu-Chiao; Tasi, Cheng-Da; You, Shuo-Ting

    2015-03-01

    Four samples were grown on 2 inch c-plane (0001) sapphire substrates with 4 μm-thick GaN template. The InN thin films were grown on InGaN buffer layer by low-temperature plasma-assisted molecular beam epitaxy (PAMBE) system. These samples were grown under a varied temperature of InGaN buffer layers: 500°C, 540°C, 570°C, and 600°C. The structure properties of these samples were analyzed by X-ray diffraction (XRD). The interference fringes of InN grown on the sample 1 (the growth temperature of InGaN buffer layer at 500°C) exhibit prominent oscillations, which indicates that the sample has a high quality and layer by layer epitaxial structure. The surface morphology and microstructure of samples were investigated by scanning electron microscopy (SEM), atomic force microscopy (AFM), and transmission electron microscopy (TEM). We confirmed the smooth surface and high quality crystalline for the sample.

  5. Fibronectin layers by matrix-assisted pulsed laser evaporation from saline buffer-based cryogenic targets.

    PubMed

    Sima, F; Davidson, P; Pauthe, E; Sima, L E; Gallet, O; Mihailescu, I N; Anselme, K

    2011-10-01

    The deposition of fibronectin (FN) from saline buffer-based cryogenic targets by matrix-assisted pulsed laser evaporation (MAPLE) onto silicon substrates is reported. A uniform distribution of FN was revealed by Ponceau staining after control experiments on nitrocellulose paper. Well-organized particulates with heights from hundreds of nanometers up to more than 1 μm packed in homogeneous layers were evidenced by optical microscopy and profilometry on Si substrates. Atomic force microscopy images showed regions composed of buffer and FN aggregates forming a compact film. Comparison of infrared spectra of drop-cast and MAPLE-deposited FN confirmed the preservation of composition and showed no degradation of the protein. The protein deposition on Si was confirmed by antibody staining. Small aggregates and fluorescent fibrils were visualized by fluorescence microscopy. Superior attachment of human osteoprogenitor cells cultivated for 3 h proved the presence of stable and intact FN molecules after transfer.

  6. Effects of misfit dislocations and AlN buffer layer on the GaInN/GaN phase diagram of the growth mode

    NASA Astrophysics Data System (ADS)

    Nakajima, Kazuo; Ujihara, Toru; Miyashita, Satoru; Sazaki, Gen

    2001-01-01

    The thickness-composition phase diagrams of the growth modes were determined for the GaInN-on-GaN (GaInN/GaN) and the GaInN-on-AlN-on-GaN (GaInN/AlN/GaN) structures. For this determination, the strain energy was calculated by considering the stress relaxation due to introduction of misfit dislocations, the surface energy was estimated from bonding enthalpy of the nearest-neighbor bonds on the surface, and the interface energy was estimated by considering both effects of the dangling bonds due to lattice misfit and the abrupt transition of bonding species at the heterointerface. From these phase diagrams, it was found that the layer-by-layer growth such as the Frank-van der Merwe mode was very difficult to obtain for the epitaxial growth of GaInN on GaN when the InN fraction is large. The Volmer-Weber mode is dominant in the phase diagram of the GaInN/GaN structures. The influence of an AlN buffer layer with a larger surface energy was studied by introducing an AlN layer between the GaInN layer and the GaN substrate. It was known that the layer-by-layer growth could be more easily obtained if misfit dislocations were introduced and an AlN layer was used as a buffer.

  7. Characterization of ZrO2 buffer layers for sequentially evaporated Y-Ba-CuO on Si and Al2O3 substrates

    NASA Technical Reports Server (NTRS)

    Valco, George J.; Rohrer, Norman J.; Pouch, John J.; Warner, Joseph D.; Bhasin, Kul B.

    1988-01-01

    Thin film high temperature superconductors have the potential to change the microwave technology for space communications systems. For such applications it is desirable that the films be formed on substrates such as Al2O3 which have good microwave properties. The use of ZrO2 buffer layers between Y-Ba-Cu-O and the substrate has been investigated. These superconducting films have been formed by multilayer sequential electron beam evaporation of Cu, BaF2 and Y with subsequent annealing. The three layer sequence of Y/BaF2/Cu is repeated four times for a total of twelve layers. Such a multilayer film, approximately 1 micron thick, deposited directly on SrTiO3 and annealed at 900 C for 45 min produces a film with a superconducting onset of 93 K and critical temperature of 85 K. Auger electron spectroscopy in conjunction with argon ion sputtering was used to obtain the distribution of each element as a function of depth for an unannealed film, the annealed film on SrTiO3 and annealed films on ZrO2 buffer layers. The individual layers were apparent. After annealing, the bulk of the film on SrTiO3 is observed to be fairly uniform while films on the substrates with buffer layers are less uniform. The Y-Ba-Cu-O/ZrO2 interface is broad with a long Ba tail into the ZrO2, suggesting interaction between the film and the buffer layer. The underlying ZrO2/Si interface is sharper. The detailed Auger results are presented and compared with samples annealed at different temperatures and durations.

  8. Retinal nerve fiber layer and ganglion cell layer thickness in patients receiving systemic isotretinoin therapy.

    PubMed

    Sekeryapan, Berrak; Dılek, Nursel; Oner, Veysi; Turkyılmaz, Kemal; Aslan, Mehmet Gokhan

    2013-10-01

    To evaluate the effect of oral isotretinoin therapy on retinal nerve fiber layer (RNFL) and ganglion cell layer (GCL) thickness by spectral domain optical coherence tomography (OCT). This prospective study included newly diagnosed nodulocystic acne patients about to receive isotretinoin treatment. Macular average GCL thickness and peripapillary average, temporal, nasal, inferior, and superior quadrant RNFL thickness were measured by OCT before and after isotretinoin treatment. Pre- and post-treatment measurements were compared with paired t test. Fifty-six eyes of 28 patients were included. The mean duration of the treatment was 6.5 ± 1.3 months. The mean average GCL thickness was 90.04 ± 5.87 (80-96) μm at baseline and 90.75 ± 6.34 (81-96) μm after treatment. The mean average RNFL thickness was 93.25 ± 6.06 μm (84-107) before treatment and 93.05 ± 5.54 μm (82-106) after treatment. There were no statistically significant differences between pre- and post-treatment values (all p > 0.05). A 6-month course of systemic isotretinoin therapy seems to have no unfavorable effect on retinal ganglion cells; however, larger studies with longer follow-up periods are needed to be conclusive.

  9. Buffer Layer Effects on Tandem InGaAs TPV Devices

    NASA Technical Reports Server (NTRS)

    Wilt, David M.; Wehrer, Rebecca J.; Maurer, William F.

    2004-01-01

    Single junction indium gallium arsenide (InGaAs) based TPV devices have demonstrated efficiencies in excess of 20% at radiator temperatures of 1058 C. Modeling suggests that efficiency improvements in single bandgap devices should continue although they will eventually plateau. One approach for extending efficiencies beyond the single bandgap limit is to follow the technique taken in the solar cell field, namely tandem TPV cells. Tandem photovoltaic devices are traditionally composed of cells of decreasing bandgap, connected electrically and optically in series. The incident light impinges upon the highest bandgap first. This device acts as a sieve, absorbing the high-energy photons, while allowing the remainder to pass through to the underlying cell(s), and so on. Tandem devices reduce the energy lost to overexcitation as well as reducing the current density (Jsc). Reduced Jsc results in lower resistive losses and enables the use of thinner and lower doped lateral current conducting layers as well as a higher pitch grid design. Fabricating TPV tandem devices utilizing InGaAs for all of the component cells in a two cell tandem necessitates the inclusion of a buffer layer in-between the high bandgap device (In0.53 Ga0.47As - 0.74eV) and the low bandgap device (In0.66Ga0.34As - 0.63eV) to accommodate the approximately 1% lattice strain generated due to the change in InGaAs composition. To incorporate only a single buffer layer structure, we have investigated the use of the indium phosphide (InP) substrate as a superstrate. Thus the high-bandgap, lattice- matched device is deposited first, followed by the buffer structure and the low-bandgap cell. The near perfect transparency of the high bandgap (1.35eV) iron-doped InP permits the device to be oriented such that the light enters through the substrate. In this paper we examine the impact of the buffer layer on the underlying lattice-matched InGaAs device. 0.74eV InGaAs devices were produced in a variety of

  10. ZnO buffer layer for metal films on silicon substrates

    DOEpatents

    Ihlefeld, Jon

    2014-09-16

    Dramatic improvements in metallization integrity and electroceramic thin film performance can be achieved by the use of the ZnO buffer layer to minimize interfacial energy between metallization and adhesion layers. In particular, the invention provides a substrate metallization method utilizing a ZnO adhesion layer that has a high work of adhesion, which in turn enables processing under thermal budgets typically reserved for more exotic ceramic, single-crystal, or metal foil substrates. Embodiments of the present invention can be used in a broad range of applications beyond ferroelectric capacitors, including microelectromechanical systems, micro-printed heaters and sensors, and electrochemical energy storage, where integrity of metallized silicon to high temperatures is necessary.

  11. SrO(001) on graphene: a universal buffer layer for integration of complex oxides

    NASA Astrophysics Data System (ADS)

    Ahmed, Adam; Wen, Hua; Pinchuk, Igor; Zhu, Tiancong; Kawakami, Roland

    2015-03-01

    We report the successful growth of high-quality crystalline SrO on highly-ordered pyrolytic graphite (HOPG) and single layer graphene by molecular beam epitaxy. The epitaxial SrO layers have (001) orientation as confirmed by x-ray diffraction (XRD), and atomic force microscopy measurements show rms surface roughness of optimal films to be 1.2 Å. Transport measurements of exfoliated graphene after SrO deposition show a strong dependence between the Dirac point and Sr oxidation. To show the utility of SrO as a buffer layer for complex oxide integration, we grew perovskite crystal SrTiO3 on SrO, and it was also confirmed to have (001) orientation from x-ray diffraction. This materials advancement opens the door to integration of many other complex oxides to explore novel correlated electron physics in graphene.

  12. Growth and characterization of graded AlGaN conducting buffer layers on n + SiC substrates

    NASA Astrophysics Data System (ADS)

    Moran, B.; Hansen, M.; Craven, M. D.; Speck, J. S.; DenBaars, S. P.

    2000-12-01

    GaN films on top of doped, graded AlGaN conducting buffer layers were grown by metal-organic chemical vapor deposition on n + SiC substrates. The effect of initial AlGaN composition and buffer layer doping level on the structural and morphological properties of these films and the conduction between these films and the substrate was investigated. A minimum resistance of 2 Ω was measured for vertical test structures.

  13. Structure, Optical Absorption, and Performance of Organic Solar Cells Improved by Gold Nanoparticles in Buffer Layers.

    PubMed

    Yang, Yingguo; Feng, Shanglei; Li, Meng; Wu, Zhongwei; Fang, Xiao; Wang, Fei; Geng, Dongping; Yang, Tieying; Li, Xiaolong; Sun, Baoquan; Gao, Xingyu

    2015-11-11

    11-Mercaptoundecanoic acid (MUA)-stabilized gold nanoparticles (AuNPs) embedded in copper phthalocyanine (CuPc) were used as a buffer layer between a poly(3-hexyl-thiophene) (P3HT)/[6,6]-phenyl C61-butyric acid methyl ester (PCBM) bulk heterojunction and anodic indium-tin oxide (ITO) substrate. As systematic synchrotron-based grazing incidence X-ray diffraction (GIXRD) experiments demonstrated that the AuNPs present in the buffer layer can improve the microstructure of the active layer with a better lamella packing of P3HT from the surface to the interior, UV-visible absorption spectrum measurements revealed enhanced optical absorption due to the localized surface plasma resonance (LSPR) generated by the AuNPs. The device of ITO/poly(3,4-ethylenedioxythiophene):polystyrenesulfonate/CuPc:MUA-stabilized AuNPs/P3HT:PCBM/LiF/Al was found with over 24% enhancement of power conversion efficiency (PCE) in comparison with reference devices without AuNPs. This remarkable improvement in PCE should be partially attributed to LSPR generated by the AuNPs and partially to improved crystallization as well as preferred orientation order of P3HT due to the presence of the AuNPs, which would promote more applications of metal NPs in the organic photovoltaic devices and other organic multilayer devices. PMID:26477556

  14. Co-solvent enhanced zinc oxysulfide buffer layers in Kesterite copper zinc tin selenide solar cells.

    PubMed

    Steirer, K Xerxes; Garris, Rebekah L; Li, Jian V; Dzara, Michael J; Ndione, Paul F; Ramanathan, Kannan; Repins, Ingrid; Teeter, Glenn; Perkins, Craig L

    2015-06-21

    A co-solvent, dimethylsulfoxide (DMSO), is added to the aqueous chemical "bath" deposition (CBD) process used to grow ZnOS buffer layers for thin film Cu2ZnSnSe4 (CZTSe) solar cells. Device performance improves markedly as fill factors increase from 0.17 to 0.51 upon the co-solvent addition. X-ray photoelectron spectroscopy (XPS) analyses are presented for quasi-in situ CZTSe/CBD-ZnOS interfaces prepared under an inert atmosphere and yield valence band offsets equal to -1.0 eV for both ZnOS preparations. When combined with optical band gap data, conduction band offsets exceed 1 eV for the water and the water/DMSO solutions. XPS measurements show increased downward band bending in the CZTSe absorber layer when the ZnOS buffer layer is deposited from water only. Admittance spectroscopy data shows that the ZnOS deposited from water increases the built-in potential (Vbi) yet these solar cells perform poorly compared to those made with DMSO added. The band energy offsets imply an alternate form of transport through this junction. Possible mechanisms are discussed, which circumvent the otherwise large conduction band spike between CZTSe and ZnOS, and improve functionality with the low-band gap absorber, CZTSe (Eg = 0.96 eV). PMID:26000570

  15. Co-solvent enhanced zinc oxysulfide buffer layers in Kesterite copper zinc tin selenide solar cells.

    PubMed

    Steirer, K Xerxes; Garris, Rebekah L; Li, Jian V; Dzara, Michael J; Ndione, Paul F; Ramanathan, Kannan; Repins, Ingrid; Teeter, Glenn; Perkins, Craig L

    2015-06-21

    A co-solvent, dimethylsulfoxide (DMSO), is added to the aqueous chemical "bath" deposition (CBD) process used to grow ZnOS buffer layers for thin film Cu2ZnSnSe4 (CZTSe) solar cells. Device performance improves markedly as fill factors increase from 0.17 to 0.51 upon the co-solvent addition. X-ray photoelectron spectroscopy (XPS) analyses are presented for quasi-in situ CZTSe/CBD-ZnOS interfaces prepared under an inert atmosphere and yield valence band offsets equal to -1.0 eV for both ZnOS preparations. When combined with optical band gap data, conduction band offsets exceed 1 eV for the water and the water/DMSO solutions. XPS measurements show increased downward band bending in the CZTSe absorber layer when the ZnOS buffer layer is deposited from water only. Admittance spectroscopy data shows that the ZnOS deposited from water increases the built-in potential (Vbi) yet these solar cells perform poorly compared to those made with DMSO added. The band energy offsets imply an alternate form of transport through this junction. Possible mechanisms are discussed, which circumvent the otherwise large conduction band spike between CZTSe and ZnOS, and improve functionality with the low-band gap absorber, CZTSe (Eg = 0.96 eV).

  16. High mobility organic thin-film transistors based on p-p heterojunction buffer layer

    NASA Astrophysics Data System (ADS)

    Qian, Xianrui; Wang, Tong; Yan, Donghang

    2013-10-01

    The p-p heterojunction of 5, 6, 11, 12-tetraphenylnaphthacene/vanadyl phthalocyanine, which has been used as the buffer layer, is demonstrated. The highest field-effect mobility is 5.1 cm2/Vs, which is one of the highest reported for polycrystalline rubrene thin film transistors. Current versus voltage characteristics of heterojunction diodes are utilized to investigate the charge injection mechanism, revealing the factors that bring about the improvement of carrier injection and the reduction of contact resistance. These results suggest that our approach is very promising to fabricate high performance organic thin-film transistors for practical applications in organic electronics.

  17. Development of Production PVD-AIN Buffer Layer System and Processes to Reduce Epitaxy Costs and Increase LED Efficiency

    SciTech Connect

    Cerio, Frank

    2013-09-14

    The DOE has set aggressive goals for solid state lighting (SSL) adoption, which require manufacturing and quality improvements for virtually all process steps leading to an LED luminaire product. The goals pertinent to this proposed project are to reduce the cost and improve the quality of the epitaxial growth processes used to build LED structures. The objectives outlined in this proposal focus on achieving cost reduction and performance improvements over state-of-the-art, using technologies that are low in cost and amenable to high efficiency manufacturing. The objectives of the outlined proposal focus on cost reductions in epitaxial growth by reducing epitaxy layer thickness and hetero-epitaxial strain, and by enabling the use of larger, less expensive silicon substrates and would be accomplished through the introduction of a high productivity reactive sputtering system and an effective sputtered aluminum-nitride (AlN) buffer/nucleation layer process. Success of the proposed project could enable efficient adoption of GaN on-silicon (GaN/Si) epitaxial technology on 150mm silicon substrates. The reduction in epitaxy cost per cm{sup 2} using 150mm GaN-on-Si technology derives from (1) a reduction in cost of ownership and increase in throughput for the buffer deposition process via the elimination of MOCVD buffer layers and other throughput and CoO enhancements, (2) improvement in brightness through reductions in defect density, (3) reduction in substrate cost through the replacement of sapphire with silicon, and (4) reduction in non-ESD yield loss through reductions in wafer bow and temperature variation. The adoption of 150mm GaN/Si processing will also facilitate significant cost reductions in subsequent wafer fabrication manufacturing costs. There were three phases to this project. These three phases overlap in order to aggressively facilitate a commercially available production GaN/Si capability. In Phase I of the project, the repeatability of the performance

  18. Oxygen inhibition layer of composite resins: effects of layer thickness and surface layer treatment on the interlayer bond strength.

    PubMed

    Bijelic-Donova, Jasmina; Garoushi, Sufyan; Lassila, Lippo V J; Vallittu, Pekka K

    2015-02-01

    An oxygen inhibition layer develops on surfaces exposed to air during polymerization of particulate filling composite. This study assessed the thickness of the oxygen inhibition layer of short-fiber-reinforced composite in comparison with conventional particulate filling composites. The effect of an oxygen inhibition layer on the shear bond strength of incrementally placed particulate filling composite layers was also evaluated. Four different restorative composites were selected: everX Posterior (a short-fiber-reinforced composite), Z250, SupremeXT, and Silorane. All composites were evaluated regarding the thickness of the oxygen inhibition layer and for shear bond strength. An equal amount of each composite was polymerized in air between two glass plates and the thickness of the oxygen inhibition layer was measured using a stereomicroscope. Cylindrical-shaped specimens were prepared for measurement of shear bond strength by placing incrementally two layers of the same composite material. Before applying the second composite layer, the first increment's bonding site was treated as follows: grinding with 1,000-grit silicon-carbide (SiC) abrasive paper, or treatment with ethanol or with water-spray. The inhibition depth was lowest (11.6 μm) for water-sprayed Silorane and greatest (22.9 μm) for the water-sprayed short-fiber-reinforced composite. The shear bond strength ranged from 5.8 MPa (ground Silorane) to 36.4 MPa (water-sprayed SupremeXT). The presence of an oxygen inhibition layer enhanced the interlayer shear bond strength of all investigated materials, but its absence resulted in cohesive and mixed failures only with the short-fiber-reinforced composite. Thus, more durable adhesion with short-fiber-reinforced composite is expected.

  19. Towards NOAA Forecasts of Permafrost Active Layer Thickness

    NASA Astrophysics Data System (ADS)

    Livezey, M. M.; Jonassen, R. G.; Horsfall, F. M. C.; Jafarov, E. E.; Schaefer, K. M.

    2014-12-01

    NOAA's implementation of its 2014 Arctic Action Plan (AAP) lacks services related to permafrost change yet the Interagency Working Group on Coordination of Domestic Energy Development and Permitting in Alaska noted that warming permafrost challenges land-based development and calls for agencies to provide focused information needed by decision-makers. To address this we propose to link NOAA's existing seasonal forecasts of temperature and precipitation with a high-resolution model of the thermal state of permafrost (Jafarov et al., 2012) to provide near-term (one year ahead) forecasts of active layer thickness (ALT). Such forecasts would be an official NOAA statement of the expected thermal state of permafrost ALT in Alaska and would require: (1) long-term climate outlooks, (2) a permafrost model, (3) detailed specification of local spatial and vertical controls upon soil thermal state, (4) high-resolution vertical measurements of that thermal state, and (5) demonstration of forecast skill in pilot studies. Pilot efforts should focus on oil pipelines where the cost can be justified. With skillful forecasts, engineers could reduce costs of monitoring and repair as well as ecosystem damage by positioning equipment to more rapidly respond to predicted disruptions.

  20. Effects of Soil Property Uncertainty on Projected Active Layer Thickness

    NASA Astrophysics Data System (ADS)

    Harp, D. R.; Atchley, A. L.; Coon, E.; Painter, S. L.; Wilson, C. J.; Romanovsky, V. E.; Liljedahl, A.

    2014-12-01

    Uncertainty in future climate is often assumed to contribute the largest uncertainty to active layer thickness (ALT) projections. However, the impact of soil property uncertainty on these projections may be significant. In this research, we evaluate the contribution of soil property uncertainty on ALT projections at the Barrow Environmental Observatory, Alaska. The effect of variations in porosity, thermal conductivity, saturation, and water retention properties of peat and mineral soil are evaluated. The micro-topography of ice wedge polygons present at the site is included in the analysis using three 1D column models to represent polygon center, rim and trough features. The Arctic Terrestrial Simulator (ATS) is used to model multiphase thermal and hydrological processes in the subsurface. We apply the Null-Space Monte Carlo (NSMC) algorithm to identify an ensemble of soil property combinations that produce simulated temperature profiles that are consistent with temperature measurements available from the site. ALT is simulated for the ensemble of soil property combinations for four climate scenarios. The uncertainty in ALT due to soil properties within and across climate scenarios is evaluated. This work was supported by LANL Laboratory Directed Research and Development Project LDRD201200068DR and by the The Next-Generation Ecosystem Experiments (NGEE Arctic) project. NGEE-Arctic is supported by the Office of Biological and Environmental Research in the DOE Office of Science.

  1. Uncovering the role of cathode buffer layer in organic solar cells

    PubMed Central

    Qi, Boyuan; Zhang, Zhi-Guo; Wang, Jizheng

    2015-01-01

    Organic solar cells (OSCs) as the third generation photovoltaic devices have drawn intense research, for their ability to be easily deposited by low-cost solution coating technologies. However the cathode in conventional OSCs, Ca, can be only deposited by thermal evaporation and is highly unstable in ambient. Therefore various solution processible cathode buffer layers (CBLs) are synthesized as substitute of Ca and show excellent effect in optimizing performance of OSCs. Yet, there is still no universal consensus on the mechanism that how CBL works, which is evidently a critical scientific issue that should be addressed. In this article detailed studies are targeted on the interfacial physics at the interface between active layer and cathode (with and without treatment of a polar CBL) by using ultraviolet photoelectron spectroscopy, capacitance-voltage measurement, and impedance spectroscopy. The experimental data demonstrate that CBL mainly takes effect in three ways: suppressing surface states at the surface of active layer, protecting the active layer from being damaged by thermally evaporated cathode, and changing the energy level alignment by forming dipole moments with active layer and/or cathode. Our findings here provide a comprehensive picture of interfacial physics in devices with and without CBL. PMID:25588623

  2. Uncovering the role of cathode buffer layer in organic solar cells.

    PubMed

    Qi, Boyuan; Zhang, Zhi-Guo; Wang, Jizheng

    2015-01-01

    Organic solar cells (OSCs) as the third generation photovoltaic devices have drawn intense research, for their ability to be easily deposited by low-cost solution coating technologies. However the cathode in conventional OSCs, Ca, can be only deposited by thermal evaporation and is highly unstable in ambient. Therefore various solution processible cathode buffer layers (CBLs) are synthesized as substitute of Ca and show excellent effect in optimizing performance of OSCs. Yet, there is still no universal consensus on the mechanism that how CBL works, which is evidently a critical scientific issue that should be addressed. In this article detailed studies are targeted on the interfacial physics at the interface between active layer and cathode (with and without treatment of a polar CBL) by using ultraviolet photoelectron spectroscopy, capacitance-voltage measurement, and impedance spectroscopy. The experimental data demonstrate that CBL mainly takes effect in three ways: suppressing surface states at the surface of active layer, protecting the active layer from being damaged by thermally evaporated cathode, and changing the energy level alignment by forming dipole moments with active layer and/or cathode. Our findings here provide a comprehensive picture of interfacial physics in devices with and without CBL. PMID:25588623

  3. Uncovering the role of cathode buffer layer in organic solar cells

    NASA Astrophysics Data System (ADS)

    Qi, Boyuan; Zhang, Zhi-Guo; Wang, Jizheng

    2015-01-01

    Organic solar cells (OSCs) as the third generation photovoltaic devices have drawn intense research, for their ability to be easily deposited by low-cost solution coating technologies. However the cathode in conventional OSCs, Ca, can be only deposited by thermal evaporation and is highly unstable in ambient. Therefore various solution processible cathode buffer layers (CBLs) are synthesized as substitute of Ca and show excellent effect in optimizing performance of OSCs. Yet, there is still no universal consensus on the mechanism that how CBL works, which is evidently a critical scientific issue that should be addressed. In this article detailed studies are targeted on the interfacial physics at the interface between active layer and cathode (with and without treatment of a polar CBL) by using ultraviolet photoelectron spectroscopy, capacitance-voltage measurement, and impedance spectroscopy. The experimental data demonstrate that CBL mainly takes effect in three ways: suppressing surface states at the surface of active layer, protecting the active layer from being damaged by thermally evaporated cathode, and changing the energy level alignment by forming dipole moments with active layer and/or cathode. Our findings here provide a comprehensive picture of interfacial physics in devices with and without CBL.

  4. Fabrication of YSZ buffer layer by single source MOCVD technique for YBCO coated conductor

    NASA Astrophysics Data System (ADS)

    Jun, Byung-Hyuk; Sun, Jong-Won; Kim, Ho-Jin; Lee, Dong-Wook; Jung, Choong-Hwan; Park, Soon-Dong; Kim, Chan-Joong

    2003-10-01

    Yttria stabilized zirconia (YSZ) buffer layers were deposited by a metal organic chemical vapor deposition technique using a single liquid source for the application of YBa 2Cu 3O 7- δ (YBCO) coated conductor. Y:Zr mole ratio was 0.2:0.8, and tetrahydrofuran (THF) was used as a solvent. The (1 0 0) single crystal MgO substrate was used for searching the deposition conditions. Bi-axially oriented CeO 2 and NiO films were fabricated on {1 0 0} <0 0 1> textured Ni substrate by the same method and used as templates. At a constant working pressure of 10 Torr, the deposition temperatures (660-800 °C) and oxygen flow rates (100-500 sccm) were changed to find the optimum deposition condition. The best (1 0 0) oriented YSZ film on MgO was obtained at 740 °C and O 2 flow rate of 300 sccm. For a YSZ buffer layer with this deposition condition on a CeO 2/Ni template, full width half maximum values of the in-plane ( ϕ-scan) and out-of-plane ( ω-scan) alignments were 10.6° and 9.8°, respectively. The SEM image of YSZ film on CeO 2/Ni showed surface morphologies without microcracks. The film deposition rate was about 100 nm/min.

  5. Buffer layers on metal surfaces having biaxial texture as superconductor substrates

    DOEpatents

    Paranthaman, Mariappan; Lee, Dominic F.; Kroeger, Donald M.; Goyal, Amit

    2000-01-01

    Buffer layer architectures are epitaxially deposited on biaxially-textured rolled substrates of nickel and/or copper and their alloys for high current conductors, and more particularly buffer layer architectures such as Y.sub.2 O.sub.3 /Ni, YSZ/Y.sub.2 O.sub.3 /Ni, RE.sub.2 O.sub.3 /Ni, (RE=Rare Earth), RE.sub.2 O.sub.3 /Y.sub.2 O.sub.3 /Ni, RE.sub.2 O.sub.3 /CeO.sub.2 /Ni, and RE.sub.2 O.sub.3 /YSZ/CeO.sub.2 /Ni, Y.sub.2 O.sub.3 /Cu, YSZ/Y.sub.2 O.sub.3 /Cu, RE.sub.2 O.sub.3 /Cu, RE.sub.2 O.sub.3 /Y.sub.2 O.sub.3 /Cu, RE.sub.2 O.sub.3 /CeO.sub.2 /Cu, and RE.sub.2 O.sub.3 /YSZ/CeO.sub.2 /Cu. Deposition methods include physical vapor deposition techniques which include electron-beam evaporation, rf magnetron sputtering, pulsed laser deposition, thermal evaporation, and solution precursor approaches, which include chemical vapor deposition, combustion CVD, metal-organic decomposition, sol-gel processing, and plasma spray.

  6. Calcium manganate: A promising candidate as buffer layer for hybrid halide perovskite photovoltaic-thermoelectric systems

    SciTech Connect

    Zhao, Pengjun; Wang, Hongguang; Kong, Wenwen; Xu, Jinbao Wang, Lei; Ren, Wei; Bian, Liang; Chang, Aimin

    2014-11-21

    We have systematically studied the feasibility of CaMnO{sub 3} thin film, an n-type perovskite, to be utilized as the buffer layer for hybrid halide perovskite photovoltaic-thermoelectric device. Locations of the conduction band and the valence band, spontaneous polarization performance, and optical properties were investigated. Results indicate the energy band of CaMnO{sub 3} can match up well with that of CH{sub 3}NH{sub 3}PbI{sub 3} on separating electron-hole pairs. In addition, the consistent polarization angle helps enlarge the open circuit voltage of the composite system. Besides, CaMnO{sub 3} film shows large absorption coefficient and low extinction coefficient under visible irradiation, demonstrating high carrier concentration, which is beneficial to the current density. More importantly, benign thermoelectric properties enable CaMnO{sub 3} film to assimilate phonon vibration from CH{sub 3}NH3PbI{sub 3}. All the above features lead to a bright future of CaMnO{sub 3} film, which can be a promising candidate as a buffer layer for hybrid halide perovskite photovoltaic-thermoelectric systems.

  7. Engineered oxide thin films as 100% lattice match buffer layers for YBCO coated conductors

    NASA Astrophysics Data System (ADS)

    Akin, Y.; Heiba, Z. K.; Sigmund, W.; Hascicek, Y. S.

    2003-12-01

    One of the most important qualities of buffer layers for RE-BCO coated conductors' growth is close lattice match with RE-BCO. However, there is no natural material with a 100% lattice match with RE-BCO. In this study mixtures of europium oxide (Eu 2O 3) and ytterbium oxide (Yb 2O 3), (Eu 1- uYb u) 2O 3 (0.0⩽ u⩽1.0), were investigated as a candidate buffer layer that could have same lattice parameter as YBa 2Cu 3O 7- δ(YBCO). Because the pseudocubic lattice parameter of Eu 2O 3 is bigger, and that of Yb 2O 3 is smaller than lattice parameter of YBCO, and the mixed oxides with appropriate ratio would have same lattice parameter of YBCO. The mixtures were prepared using metal-organic precursor by sol-gel process, and it was found that all mixed samples are single phase, complete solid solutions, and have same crystal system over the whole range of " u". Lattice parameters of mixed (Eu 1- uYb u) 2O 3 oxide powders were changed between 10.86831 and 10.42828 Å which are lattice parameter of Eu 2O 3 and Yb 2O 3, respectively by changing the ratio of Eu/Yb in the mixture. Phase and lattice parameter analysis revealed that pseudocubic lattice parameter of (Eu 0.893Yb 0.107) 2O 3 is 3.82 Å which is same as the lattice parameter of YBCO. Textured (Eu 0.893Yb 0.107) 2O 3 buffer layers were grown on biaxially textured-Ni (1 0 0) substrates. The solution was prepared from Europium and Ytterbium 2,4-pentadioanate, and was deposited on the Ni substrates using a reel-to-reel sol-gel dip coating system. The textured films were annealed at 1150 °C for 10 min under 4% H 2-Ar gas flow. Extensive texture analysis has been done to characterize the texture of (Eu 0.893Yb 0.107) 2O 3 buffer layers. X-ray diffraction (XRD) of the buffer layer showed strong out-of-plane orientation on Ni tape. The (Eu 0.893Yb 0.107) 2O 3 (2 2 2) pole figure indicated a single cube-on-cube textured structure. The omega and phi scans revealed good out-of-plane and in-plane alignments. The full

  8. Thickness of the Meniscal Lamellar Layer: Correlation with Indentation Stiffness and Comparison of Normal and Abnormally Thick Layers by Using Multiparametric Ultrashort Echo Time MR Imaging.

    PubMed

    Choi, Ja-Young; Biswas, Reni; Bae, Won C; Healey, Robert; Im, Michael; Statum, Sheronda; Chang, Eric Y; Du, Jiang; Bydder, Graeme M; D'Lima, Darryl; Chung, Christine B

    2016-07-01

    Purpose To determine the relationship between lamellar layer thickness on ultrashort echo time (UTE) magnetic resonance (MR) images and indentation stiffness of human menisci and to compare quantitative MR imaging values between two groups with normal and abnormally thick lamellar layers. Materials and Methods This was a HIPAA-compliant, institutional review board-approved study. Nine meniscal pieces were obtained from seven donors without gross meniscal pathologic results (mean age, 57.4 years ± 14.5 [standard deviation]). UTE MR imaging and T2, UTE T2*, and UTE T1ρ mapping were performed. The presence of abnormal lamellar layer thickening was determined and thicknesses were measured. Indentation testing was performed. Correlation between the thickness and indentation stiffness was assessed, and mean quantitative MR imaging values were compared between the groups. Results Thirteen normal lamellar layers had mean thickness of 232 μm ± 85 and indentation peak force of 1.37 g ± 0.87. Four abnormally thick lamellar layers showed mean thickness of 353.14 μm ± 98.36 and peak force 0.72 g ± 0.31. In most cases, normal thicknesses showed highly positive correlation with the indentation peak force (r = 0.493-0.912; P < .001 to .05). However, the thickness in two abnormal lamellar layers showed highly negative correlation (r = -0.90, P < .001; and r = -0.23, P = .042) and no significant correlation in the others. T2, UTE T2*, and UTE T1ρ values in abnormally thick lamellar layers were increased compared with values in normal lamellar layers, although only the UTE T2* value showed significant difference (P = .010). Conclusion Variation of lamellar layer thickness in normal human menisci was evident on two-dimensional UTE images. In normal lamellar layers, thickness is highly and positively correlated with surface indentation stiffness. UTE T2* values may be used to differentiate between normal and abnormally thickened lamellar layers. (©) RSNA, 2016.

  9. Obtaining Thickness Maps of Corneal Layers Using the Optimal Algorithm for Intracorneal Layer Segmentation

    PubMed Central

    Rabbani, Hossein; Kazemian Jahromi, Mahdi; Jorjandi, Sahar; Mehri Dehnavi, Alireza; Hajizadeh, Fedra; Peyman, Alireza

    2016-01-01

    Optical Coherence Tomography (OCT) is one of the most informative methodologies in ophthalmology and provides cross sectional images from anterior and posterior segments of the eye. Corneal diseases can be diagnosed by these images and corneal thickness maps can also assist in the treatment and diagnosis. The need for automatic segmentation of cross sectional images is inevitable since manual segmentation is time consuming and imprecise. In this paper, segmentation methods such as Gaussian Mixture Model (GMM), Graph Cut, and Level Set are used for automatic segmentation of three clinically important corneal layer boundaries on OCT images. Using the segmentation of the boundaries in three-dimensional corneal data, we obtained thickness maps of the layers which are created by these borders. Mean and standard deviation of the thickness values for normal subjects in epithelial, stromal, and whole cornea are calculated in central, superior, inferior, nasal, and temporal zones (centered on the center of pupil). To evaluate our approach, the automatic boundary results are compared with the boundaries segmented manually by two corneal specialists. The quantitative results show that GMM method segments the desired boundaries with the best accuracy. PMID:27247559

  10. The role of Ag buffer layer in Fe islands growth on Ge (111) surfaces

    SciTech Connect

    Fu, Tsu-Yi Wu, Jia-Yuan; Jhou, Ming-Kuan; Hsu, Hung-Chan

    2015-05-07

    Sub-monolayer iron atoms were deposited at room temperature on Ge (111)-c(2 × 8) substrates with and without Ag buffer layers. The behavior of Fe islands growth was investigated by using scanning tunneling microscope (STM) after different annealing temperatures. STM images show that iron atoms will cause defects and holes on substrates at room temperature. As the annealing temperature rises, iron atoms pull out germanium to form various kinds of alloyed islands. However, the silver layer can protect the Ag/Ge(111)-(√3×√3) reconstruction from forming defects. The phase diagram shows that ring, dot, and triangular defects were only found on Ge (111)-c(2 × 8) substrates. The kinds of islands found in Fe/Ge system are similar to Fe/Ag/Ge system. It indicates that Ge atoms were pulled out to form islands at high annealing temperatures whether there was a Ag layer or not. But a few differences in big pyramidal or strip islands show that the silver layer affects the development of islands by changing the surface symmetry and diffusion coefficient. The structure characters of various islands are also discussed.

  11. Semi-insulating Sn-Zr-O: Tunable resistance buffer layers

    SciTech Connect

    Barnes, Teresa M.; Burst, James M.; Reese, Matthew O.; Perkins, Craig L.

    2015-03-02

    Highly resistive and transparent (HRT) buffer layers are critical components of solar cells and other opto-electronic devices. HRT layers are often undoped transparent conducting oxides. However, these oxides can be too conductive to form an optimal HRT. Here, we present a method to produce HRT layers with tunable electrical resistivity, despite the presence of high concentrations of unintentionally or intentionally added dopants in the film. This method relies on alloying wide-bandgap, high-k dielectric materials (e.g., ZrO{sub 2}) into the host oxide to tune the resistivity. We demonstrate Sn{sub x}Zr{sub 1−x}O{sub 2}:F films with tunable resistivities varying from 0.001 to 10 Ω cm, which are controlled by the Zr mole fraction in the films. Increasing Zr suppresses carriers by expanding the bandgap almost entirely by shifting the valence-band position, which allows the HRT layers to maintain good conduction-band alignment for a low-resistance front contact.

  12. Artificially MoO3 graded ITO anodes for acidic buffer layer free organic photovoltaics

    NASA Astrophysics Data System (ADS)

    Lee, Hye-Min; Kim, Seok-Soon; Kim, Han-Ki

    2016-02-01

    We report characteristics of MoO3 graded ITO anodes prepared by a RF/DC graded sputtering for acidic poly(3,4-ethylene dioxylene thiophene):poly(styrene sulfonic acid) (PEDOT:PSS)-free organic solar cells (OSCs). Graded sputtering of the MoO3 buffer layer on top of the ITO layer produced MoO3 graded ITO anodes with a sheet resistance of 12.67 Ω/square, a resistivity of 2.54 × 10-4 Ω cm, and an optical transmittance of 86.78%, all of which were comparable to a conventional ITO anode. In addition, the MoO3 graded ITO electrode showed a greater work function of 4.92 eV than that (4.6 eV) of an ITO anode, which is beneficial for hole extraction from an organic active layer. Due to the high work function of MoO3 graded ITO electrodes, the acidic PEDOT:PSS-free OSCs fabricated on the MoO3 graded ITO electrode exhibited a power conversion efficiency 3.60% greater than that of a PEDOT:PSS-free OSC on the conventional ITO anode. The successful operation of PEDOT:PSS-free OSCs indicates simpler fabrication steps for cost-effective OSCs and elimination of interfacial reactions caused by the acidic PEDOT:PSS layer for reliable OSCs.

  13. Role of the buffer layer in the active junction in amorphous-crystalline silicon heterojunction solar cells

    NASA Astrophysics Data System (ADS)

    Pallarès, J.; Schropp, R. E. I.

    2000-07-01

    We fabricated pn and pin a-SiC:H/c-Si heterojunction solar cells following two different processes. In the first approach, wafers were subjected to an extra atomic hydrogen (produced by hot wire chemical vapor deposition) prior to the deposition of the amorphous layer. A reduction in the open-circuit voltage was observed for the passivated cells due to their higher leakage current. In the second process, pin solar cells with two different quality intrinsic a-Si:H buffer layers were fabricated using plasma enhanced chemical vapor deposition. The cells with a device quality buffer layer (deposited at higher temperature) showed better performance than those with a buffer layer with high hydrogen content and higher defect density (deposited at lower temperatures).

  14. Improvement of Performance and Stability of Polymer Photovoltaic Cells by WO3/CUPC as Anode Buffer Layers

    NASA Astrophysics Data System (ADS)

    Varnamkhasti, M. G.; Shahriaria, E.

    2015-05-01

    In this work, bulk-hetrojunction polymer photovoltaic cells based on poly-(3-hexylthiophene) (P3HT): [6,6]-phenyl C61 butyric acid methyl ester (PCBM) were fabricated with tungsten oxide (WO3) and copper phthalocyanine (CuPc) as anodic buffer layers. The WO3 plays an important role in reducing the interfacial resistance, efficiently extracting holes and good band structure matching between the work function of the anode and the highest occupied molecular orbital of the organic material. The insertion of CuPc improves the device In this work, bulk-hetrojunction polymer photovoltaic cells based on poly-(3-hexylthiophene) (P3HT): [6, 6]-phenyl C61 butyric acid methylester (PCBM) were fabricated with tungsten oxide (WO3) and copper phthalocyanine (CuPc) as anodic buffer layers. The WO3 plays animportant role in reducing the interfacial resistance, efficiently extracting holes and good band structure matching between the workfunction of the anode and the highest occupied molecular orbital of the organic material. The insertion of CuPc improves the device performance and expands the absorption spectra range of the photovoltaic devices. The effects of WO3 and CuPc thickness on the performance of the photovoltaic devices were investigated. The optimum thicknesses of WO3 and CuPc were 10 nm and 8 nm, respectively. The obtained power conversion efficiency of optimized cell was about 4.21%. Also, the device performance was analyzed based on thesurface roughness of bare ITO and ITO that was covered with poly (3, 4-ethylenedioxythiophene): poly (styrene sulfonate) (PEDOT:PSS) or WO3/CuPc. The device stability in an ambient atmosphere without encapsulation under continuous light irradiation was also investigated.For the cell with PEDOT:PSS, the power conversion efficiency reduced down to 50% of the maximum value (half-life) after light irradiation for 12 h, while the half-life of device for WO3/CuPc was about 120 h. Therefore, the lifetime of unpackaged devices was improved with

  15. Study of the structural quality of GaN epitaxial layers obtained by hydride vapor phase epitaxy using a low-temperature buffer layer

    NASA Astrophysics Data System (ADS)

    Belogorohov, I. A.; Donskov, A. A.; Knyazev, S. N.; Kozlova, Yu. P.; Pavlov, V. F.; Yugova, T. G.

    2015-11-01

    The structural quality and surface morphology of low-temperature (LT) buffer layers after deposition and high-temperature (HT) annealing and HT GaN layers grown on LT buffer layers by hydride vapor phase epitaxy have been investigated. The HCl flow rate through the Ga source varied from 0.3 to 2 L/h, and the carrier gas N2 flow rate was either 18 or 60 L/h. It is established that the structural quality of LT GaN buffer is determined to a great extent by the HCl and N2 flow rates; the best results are obtained at HCl and N2 flow rates of 0.3 and 18 L/h, respectively. These GaN layers are characterized by a mirror surface and a rocking curve half-width of 360". It is suggested that the layer structure is improved due to the increase in the lateral growth rate.

  16. Inconsistent correlation of seismic layer 2a and lava layer thickness in oceanic crust.

    PubMed

    Christeson, Gail L; McIntosh, Kirk D; Karson, Jeffrey A

    2007-01-25

    At mid-ocean ridges with fast to intermediate spreading rates, the upper section of oceanic crust is composed of lavas overlying a sheeted dyke complex. These units are formed by dykes intruding into rocks overlying a magma chamber, with lavas erupting at the ocean floor. Seismic reflection data acquired over young oceanic crust commonly image a reflector known as 'layer 2A', which is typically interpreted as defining the geologic boundary between lavas and dykes. An alternative hypothesis is that the reflector is associated with an alteration boundary within the lava unit. Many studies have used mapped variability in layer 2A thickness to make inferences regarding the geology of the oceanic crust, including volcanic construction, dyke intrusion and faulting. However, there has been no link between the geologic and seismological structure of oceanic crust except at a few deep drill holes. Here we show that, although the layer 2A reflector is imaged near the top of the sheeted dyke complex at fast-spreading crust located adjacent to the Hess Deep rift, it is imaged significantly above the sheeted dykes section at intermediate-spreading crust located near the Blanco transform fault. Although the lavas and underlying transition zone thicknesses differ by about a factor of two, the shallow seismic structure is remarkably similar at the two locations. This implies that seismic layer 2A cannot be used reliably to map the boundary between lavas and dykes in young oceanic crust. Instead we argue that the seismic layer 2A reflector corresponds to an alteration boundary that can be located either within the lava section or near the top of the sheeted dyke complex of oceanic crust.

  17. A sputtered CdS buffer layer for co-electrodeposited Cu2ZnSnS4 solar cells with 6.6% efficiency.

    PubMed

    Tao, Jiahua; Zhang, Kezhi; Zhang, Chuanjun; Chen, Leilei; Cao, Huiyi; Liu, Junfeng; Jiang, Jinchun; Sun, Lin; Yang, Pingxiong; Chu, Junhao

    2015-06-28

    Cu2ZnSnS4 thin films with thicknesses ranging from 0.35 to 1.85 μm and micron-sized grains (0.5-1.5 μm) were synthesized using co-electrodeposited Cu-Zn-Sn-S precursors with different deposition times. Here we have introduced a sputtered CdS buffer layer for the development of CZTS solar cells for the first time, which enables breakthrough efficiencies up to 6.6%. PMID:26027699

  18. Electron density and currents of AlN/GaN high electron mobility transistors with thin GaN/AlN buffer layer

    SciTech Connect

    Bairamis, A.; Zervos, Ch.; Georgakilas, A.; Adikimenakis, A.; Kostopoulos, A.; Kayambaki, M.; Tsagaraki, K.; Konstantinidis, G.

    2014-09-15

    AlN/GaN high electron mobility transistor (HEMT) structures with thin GaN/AlN buffer layer have been analyzed theoretically and experimentally, and the effects of the AlN barrier and GaN buffer layer thicknesses on two-dimensional electron gas (2DEG) density and transport properties have been evaluated. HEMT structures consisting of [300 nm GaN/ 200 nm AlN] buffer layer on sapphire were grown by plasma-assisted molecular beam epitaxy and exhibited a remarkable agreement with the theoretical calculations, suggesting a negligible influence of the crystalline defects that increase near the heteroepitaxial interface. The 2DEG density varied from 6.8 × 10{sup 12} to 2.1 × 10{sup 13} cm{sup −2} as the AlN barrier thickness increased from 2.2 to 4.5 nm, while a 4.5 nm AlN barrier would result to 3.1 × 10{sup 13} cm{sup −2} on a GaN buffer layer. The 3.0 nm AlN barrier structure exhibited the highest 2DEG mobility of 900 cm{sup 2}/Vs for a density of 1.3 × 10{sup 13} cm{sup −2}. The results were also confirmed by the performance of 1 μm gate-length transistors. The scaling of AlN barrier thickness from 1.5 nm to 4.5 nm could modify the drain-source saturation current, for zero gate-source voltage, from zero (normally off condition) to 0.63 A/mm. The maximum drain-source current was 1.1 A/mm for AlN barrier thickness of 3.0 nm and 3.7 nm, and the maximum extrinsic transconductance was 320 mS/mm for 3.0 nm AlN barrier.

  19. Drift of scroll waves in thin layers caused by thickness features: asymptotic theory and numerical simulations.

    PubMed

    Biktasheva, I V; Dierckx, H; Biktashev, V N

    2015-02-13

    A scroll wave in a very thin layer of excitable medium is similar to a spiral wave, but its behavior is affected by the layer geometry. We identify the effect of sharp variations of the layer thickness, which is separate from filament tension and curvature-induced drifts described earlier. We outline a two-step asymptotic theory describing this effect, including asymptotics in the layer thickness and calculation of the drift of so-perturbed spiral waves using response functions. As specific examples, we consider drift of scrolls along thickness steps, ridges, ditches, and disk-shaped thickness variations. Asymptotic predictions agree with numerical simulations.

  20. Enhancing electrochemical performance by control of transport properties in buffer layers--solid oxide fuel/electrolyser cells.

    PubMed

    Ramasamy, Devaraj; Nasani, Narendar; Brandão, Ana D; Pérez Coll, Domingo; Fagg, Duncan P

    2015-05-01

    The current work demonstrates how tailoring the transport properties of thin ceria-based buffer layers in solid oxide fuel or electrolyser cells can provide the necessary phase stability against chemical interaction at the electrolyte/electrode interface, while also providing radical improvements in the electrochemical performance of the oxygen electrode. Half cells of Ce0.8R0.2O2-δ + 2 mol% Co buffer layers (where R = Gd, Pr) with Nd2NiO4+δ electrodes were fabricated by spin coating on dense YSZ electrolyte supports. Dramatic decreases in polarization resistance, Rp, of up to an order of magnitude, could be achieved in the order, Pr ≪ Gd < no buffer layer. The current article shows how this improvement can be related to increased levels of ambipolar conductivity in the mixed conducting buffer layer, which provides an additional parallel path for electrochemical reaction. This is an important breakthrough as it shows how electrode polarization resistance can be substantially improved, in otherwise identical electrochemical cells, solely by tailoring the transport properties of thin intermediate buffer layers.

  1. Retinal nerve fiber layer thickness and retinal vessel calibers in children with thalassemia minor

    PubMed Central

    Acer, Semra; Balcı, Yasemin I; Pekel, Gökhan; Ongun, Tuğba T; Polat, Aziz; Çetin, Ebru N; Yağcı, Ramazan

    2016-01-01

    Objectives: Evaluation of the peripapillary retinal nerve fiber layer thickness, subfoveal choroidal thickness, and retinal vessel caliber measurements in children with thalassemia minor. Methods: In this cross-sectional and comparative study, 30 thalassemia minor patients and 36 controls were included. Heidelberg spectral domain optical coherence tomography was used for peripapillary retinal nerve fiber layer thickness, subfoveal choroidal thickness, and retinal vessel caliber measurements. Results: There was no statistically significant difference in retinal nerve fiber layer thickness and subfoveal choroidal thickness between the two groups (p > 0.05). There was no correlation between retinal nerve fiber layer thickness and hemoglobin values. Both the arterioral and venular calibers were higher in thalassemia minor group (p < 0.05). Conclusion: There is increased retinal arterioral and venular calibers in children with thalassemia minor compared with controls. PMID:27540484

  2. Assembly and organization of poly(3-hexylthiophene) brushes and their potential use as novel anode buffer layers for organic photovoltaics

    NASA Astrophysics Data System (ADS)

    Alonzo, José; Kochemba, W. Michael; Pickel, Deanna L.; Ramanathan, Muruganathan; Sun, Zhenzhong; Li, Dawen; Chen, Jihua; Sumpter, Bobby G.; Heller, William T.; Kilbey, S. Michael, II

    2013-09-01

    Buffer layers that control electrochemical reactions and physical interactions at electrode/film interfaces are key components of an organic photovoltaic cell. Here the structure and properties of layers of semi-rigid poly(3-hexylthiophene) (P3HT) chains tethered at a surface are investigated, and these functional systems are applied in an organic photovoltaic device. Areal density of P3HT chains is readily tuned through the choice of polymer molecular weight and annealing conditions, and insights from optical absorption spectroscopy and semiempirical quantum calculation methods suggest that tethering causes intrachain defects that affect co-facial π-stacking of brush chains. Because of their ability to modify oxide surfaces, P3HT brushes are utilized as an anode buffer layer in a P3HT-PCBM (phenyl-C61-butyric acid methyl ester) bulk heterojunction device. Current-voltage characterization shows a significant enhancement in short circuit current, suggesting the potential of these novel nanostructured buffer layers to replace the PEDOT:PSS buffer layer typically applied in traditional P3HT-PCBM solar cells.Buffer layers that control electrochemical reactions and physical interactions at electrode/film interfaces are key components of an organic photovoltaic cell. Here the structure and properties of layers of semi-rigid poly(3-hexylthiophene) (P3HT) chains tethered at a surface are investigated, and these functional systems are applied in an organic photovoltaic device. Areal density of P3HT chains is readily tuned through the choice of polymer molecular weight and annealing conditions, and insights from optical absorption spectroscopy and semiempirical quantum calculation methods suggest that tethering causes intrachain defects that affect co-facial π-stacking of brush chains. Because of their ability to modify oxide surfaces, P3HT brushes are utilized as an anode buffer layer in a P3HT-PCBM (phenyl-C61-butyric acid methyl ester) bulk heterojunction device

  3. Power Conversion Efficiency and Device Stability Improvement of Inverted Perovskite Solar Cells by Using a ZnO:PFN Composite Cathode Buffer Layer.

    PubMed

    Jia, Xiaorui; Zhang, Lianping; Luo, Qun; Lu, Hui; Li, Xueyuan; Xie, Zhongzhi; Yang, Yongzhen; Li, Yan-Qing; Liu, Xuguang; Ma, Chang-Qi

    2016-07-20

    We have demonstrated in this article that both power conversion efficiency (PCE) and performance stability of inverted planar heterojunction perovskite solar cells can be improved by using a ZnO:PFN nanocomposite (PFN: poly[(9,9-bis(3'-(N,N-dimethylamion)propyl)-2,7-fluorene)-alt-2,7-(9,9-dioctyl)-fluorene]) as the cathode buffer layer (CBL). This nanocomposite could form a compact and defect-less CBL film on the perovskite/PC61BM surface (PC61BM: phenyl-C61-butyric acid methyl ester). In addition, the high conductivity of the nanocomposite layer makes it works well at a layer thickness of 150 nm. Both advantages of the composite layer are helpful in reducing interface charge recombination and improving device performance. The power conversion efficiency (PCE) of the best ZnO:PFN CBL based device was measured to be 12.76%, which is higher than that of device without CBL (9.00%), or device with ZnO (7.93%) or PFN (11.30%) as the cathode buffer layer. In addition, the long-term stability is improved by using ZnO:PFN composite cathode buffer layer when compare to that of the reference cells. Almost no degradation of open circuit voltage (VOC) and fill factor (FF) was found for the device having ZnO:PFN, suggesting that ZnO:PFN is able to stabilize the interface property and consequently improve the solar cell performance stability. PMID:27349330

  4. Compact hematite buffer layer as a promoter of nanorod photoanode performances

    PubMed Central

    Milan, R.; Cattarin, S.; Comisso, N.; Baratto, C.; Kaunisto, K.; Tkachenko, N. V.; Concina, I.

    2016-01-01

    The effect of a thin α-Fe2O3 compact buffer layer (BL) on the photoelectrochemical performances of a bare α-Fe2O3 nanorods photoanode is investigated. The BL is prepared through a simple spray deposition onto a fluorine-doped tin oxide (FTO) conducting glass substrate before the growth of a α-Fe2O3 nanorods via a hydrothermal process. Insertion of the hematite BL between the FTO and the nanorods markedly enhances the generated photocurrent, by limiting undesired losses of photogenerated charges at the FTO||electrolyte interface. The proposed approach warrants a marked improvement of material performances, with no additional thermal treatment and no use/dispersion of rare or toxic species, in agreement with the principles of green chemistry. PMID:27733756

  5. Compact hematite buffer layer as a promoter of nanorod photoanode performances

    NASA Astrophysics Data System (ADS)

    Milan, R.; Cattarin, S.; Comisso, N.; Baratto, C.; Kaunisto, K.; Tkachenko, N. V.; Concina, I.

    2016-10-01

    The effect of a thin α-Fe2O3 compact buffer layer (BL) on the photoelectrochemical performances of a bare α-Fe2O3 nanorods photoanode is investigated. The BL is prepared through a simple spray deposition onto a fluorine-doped tin oxide (FTO) conducting glass substrate before the growth of a α-Fe2O3 nanorods via a hydrothermal process. Insertion of the hematite BL between the FTO and the nanorods markedly enhances the generated photocurrent, by limiting undesired losses of photogenerated charges at the FTO||electrolyte interface. The proposed approach warrants a marked improvement of material performances, with no additional thermal treatment and no use/dispersion of rare or toxic species, in agreement with the principles of green chemistry.

  6. Direct electron injection into an oxide insulator using a cathode buffer layer.

    PubMed

    Lee, Eungkyu; Lee, Jinwon; Kim, Ji-Hoon; Lim, Keon-Hee; Seok Byun, Jun; Ko, Jieun; Dong Kim, Young; Park, Yongsup; Kim, Youn Sang

    2015-04-13

    Injecting charge carriers into the mobile bands of an inorganic oxide insulator (for example, SiO2, HfO2) is a highly complicated task, or even impossible without external energy sources such as photons. This is because oxide insulators exhibit very low electron affinity and high ionization energy levels. Here we show that a ZnO layer acting as a cathode buffer layer permits direct electron injection into the conduction bands of various oxide insulators (for example, SiO2, Ta2O5, HfO2, Al2O3) from a metal cathode. Studies of current-voltage characteristics reveal that the current ohmically passes through the ZnO/oxide-insulator interface. Our findings suggests that the oxide insulators could be used for simply fabricated, transparent and highly stable electronic valves. With this strategy, we demonstrate an electrostatic discharging diode that uses 100-nm SiO2 as an active layer exhibiting an on/off ratio of ∼10(7), and protects the ZnO thin-film transistors from high electrical stresses.

  7. Direct electron injection into an oxide insulator using a cathode buffer layer

    PubMed Central

    Lee, Eungkyu; Lee, Jinwon; Kim, Ji-Hoon; Lim, Keon-Hee; Seok Byun, Jun; Ko, Jieun; Dong Kim, Young; Park, Yongsup; Kim, Youn Sang

    2015-01-01

    Injecting charge carriers into the mobile bands of an inorganic oxide insulator (for example, SiO2, HfO2) is a highly complicated task, or even impossible without external energy sources such as photons. This is because oxide insulators exhibit very low electron affinity and high ionization energy levels. Here we show that a ZnO layer acting as a cathode buffer layer permits direct electron injection into the conduction bands of various oxide insulators (for example, SiO2, Ta2O5, HfO2, Al2O3) from a metal cathode. Studies of current–voltage characteristics reveal that the current ohmically passes through the ZnO/oxide-insulator interface. Our findings suggests that the oxide insulators could be used for simply fabricated, transparent and highly stable electronic valves. With this strategy, we demonstrate an electrostatic discharging diode that uses 100-nm SiO2 as an active layer exhibiting an on/off ratio of ∼107, and protects the ZnO thin-film transistors from high electrical stresses. PMID:25864642

  8. Growth of III-V nitrides and buffer layer investigation by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Huang, Tzu-Fang

    1999-11-01

    III-V nitrides have been investigated intensively due to the enormous interest in optoelectronic device applications in the green, blue, violet, and near-ultraviolet regions. Advances in III-V nitride materials for short wavelength light sources will lead to both a revolution in optical disk storage, as higher densities can be achieved with short wavelengths, and a major impact on imaging and graphic technology as high quality red, green, and blue light-emitting diodes (LED) and lasers become available. High quality GaN films have mostly been prepared by metal-organic vapor phase epitaxy (MOCVD), molecular beam epitaxy (MBE) and vapor phase epitaxy (VPE). Compared to these techniques, pulsed laser deposition (PLD) is a relatively new growth technique used widely for the growth of oxide thin films. However, several advantages of PLD make it worthy of study as a method of growing nitrides. The congruent ablation achieved with short UV-laser pulses allows deposition of a multicomponent material by employing a single target and the ability for depositing a wide variety of materials. This advantage makes PLD very suitable for growing multilayer structures sequentially in the same chamber and investigating the effect of buffer layers. Moreover, the strong nonequilibrium growth conditions of PLD may lead to different nucleation and growth processes. In this work, GaN and (Al,Ga)N films have been epitaxially grown on (0001) sapphire substrate by PLD, which has been successfully applied to controlling the lattice constant and band gap of (Al,Ga)N. Room-temperature photoluminescence of PLD-GaN exhibits a strong band edge emission at 3.4eV. The threading dislocations of GaN are predominantly screw dislocations with Burgers vector of <0001> while edge dislocations with Burgers vector of 1/3<11-20> are the dominant ones in GaN grown by MBE, MOCVD and VPE. This variation observed in defect characteristics may come from the difference in nucleation and growth kinetics between PLD

  9. Preparation of a thick polymer brush layer composed of poly(2-methacryloyloxyethyl phosphorylcholine) by surface-initiated atom transfer radical polymerization and analysis of protein adsorption resistance.

    PubMed

    Inoue, Yuuki; Onodera, Yuya; Ishihara, Kazuhiko

    2016-05-01

    The purpose of this study was to prepare a thick polymer brush layer composed of poly(2-methacryloyloxyethyl phosphorylcholine (MPC)) and assess its resistance to protein adsorption from the dissolved state of poly(MPC) chains in an aqueous condition. The thick poly(MPC) brush layer was prepared through the surface-initiated atom transfer radical polymerization (SI-ATRP) of MPC with a free initiator from an initiator-immobilized substrate at given [Monomer]/[Free initiator] ratios. The ellipsometric thickness of the poly(MPC) brush layers could be controlled by the polymerization degree of the poly(MPC) chains. The thickness of the poly(MPC) brush layer in an aqueous medium was larger than that in air, and this tendency became clearer when the polymerization degree of the poly(MPC) increased. The maximum thickness of the poly(MPC) brush layer in an aqueous medium was around 110 nm. The static air contact angle of the poly(MPC) brush layer in water indicated a reasonably hydrophilic nature, which was independent of the thickness of the poly(MPC) brush layer at the surface. This result occurred because the hydrated state of the poly(MPC) chains is not influenced by the environment surrounding them. Finally, as measured with a quartz crystal microbalance, the amount of protein adsorbed from a fetal bovine serum solution (10% in phosphate-buffered saline) on the original substrate was 420 ng/cm(2). However, the poly(MPC) brush layer reduced this value dramatically to less than 50 ng/cm(2). This effect was independent of the thickness of the poly(MPC) brush layer for thicknesses between 20 nm and about 110 nm. These results indicated that the surface covered with a poly(MPC) brush layer is a promising platform to avoid biofouling and could also be applied to analyze the reactions of biological molecules with a high signal/noise ratio.

  10. Cloud layer thicknesses from a combination of surface and upper-air observations

    NASA Technical Reports Server (NTRS)

    Poore, Kirk D.; Wang, Junhong; Rossow, William B.

    1995-01-01

    Cloud layer thicknesses are derived from base and top altitudes by combining 14 years (1975-1988) of surface and upper-air observations at 63 sites in the Northern Hemisphere. Rawinsonde observations are employed to determine the locations of cloud-layer top and base by testing for dewpoint temperature depressions below some threshold value. Surface observations serve as quality checks on the rawinsonde-determined cloud properties and provide cloud amount and cloud-type information. The dataset provides layer-cloud amount, cloud type, high, middle, or low height classes, cloud-top heights, base heights and layer thicknesses, covering a range of latitudes from 0 deg to 80 deg N. All data comes from land sites: 34 are located in continental interiors, 14 are near coasts, and 15 are on islands. The uncertainties in the derived cloud properties are discussed. For clouds classified by low-, mid-, and high-top altitudes, there are strong latitudinal and seasonal variations in the layer thickness only for high clouds. High-cloud layer thickness increases with latitude and exhibits different seasonal variations in different latitude zones: in summer, high-cloud layer thickness is a maximum in the Tropics but a minimum at high latitudes. For clouds classified into three types by base altitude or into six standard morphological types, latitudinal and seasonal variations in layer thickness are very small. The thickness of the clear surface layer decreases with latitude and reaches a summer minimum in the Tropics and summer maximum at higher latitudes over land, but does not vary much over the ocean. Tropical clouds occur in three base-altitude groups and the layer thickness of each group increases linearly with top altitude. Extratropical clouds exhibit two groups, one with layer thickness proportional to their cloud-top altitude and one with small (less than or equal to 1000 m) layer thickness independent of cloud-top altitude.

  11. Metaporous layer to overcome the thickness constraint for broadband sound absorption

    SciTech Connect

    Yang, Jieun; Lee, Joong Seok; Kim, Yoon Young

    2015-05-07

    The sound absorption of a porous layer is affected by its thickness, especially in a low-frequency range. If a hard-backed porous layer contains periodical arrangements of rigid partitions that are coordinated parallel and perpendicular to the direction of incoming sound waves, the lower bound of the effective sound absorption can be lowered much more and the overall absorption performance enhanced. The consequence of rigid partitioning in a porous layer is to make the first thickness resonance mode in the layer appear at much lower frequencies compared to that in the original homogeneous porous layer with the same thickness. Moreover, appropriate partitioning yields multiple thickness resonances with higher absorption peaks through impedance matching. The physics of the partitioned porous layer, or the metaporous layer, is theoretically investigated in this study.

  12. Structural characterization of strained silicon grown on a SiGe buffer layer

    NASA Astrophysics Data System (ADS)

    Jang, J. H.; Phen, M. S.; Gerger, A.; Jones, K. S.; Hansen, J. L.; Larsen, A. N.; Craciun, V.

    2008-03-01

    The microstructure of about 50 nm thick strained-Si/Si0.7Ge0.3/graded-SiGe/Si-substrate layers grown by MBE (molecular beam epitaxy) was characterized using high-resolution x-ray based characterization techniques. The degree of relaxation of the Si-capping layer after a thermal anneal at 800 °C for 30 min was determined using reciprocal space map (RSM) scans recorded around the (1 1 3) diffraction plane. However, since a RSM is not suitable when the strain relaxation is very small, x-ray reflectivity (XRR) and omega rocking curves (ω-RCs) were employed for the relaxation study. XRR spectra were collected and analyzed to obtain thickness, Ge concentration and surface/interfacial roughness information of the as-grown and annealed samples. ω-RCs were performed in order to investigate the crystalline quality of the samples. It was found that the annealed strained layer showed higher Lorentzian fraction in ω-RCs and misfit defect density which were caused by strain relaxation. In addition, the results showed that after the annealing process the broadening in the tail region of the ω-RCs was indicative of a change in the coherence length distribution of the crystallite size. The misfit defects and surface morphology obtained from transmission electron microscopy (TEM) and atomic force microscopy (AFM) investigations were consistent with results obtained from the x-ray based characterization techniques.

  13. Effects of buffer layer and thermal annealing on the performance of hybrid Cu2S/PVK electrically bistable devices

    NASA Astrophysics Data System (ADS)

    Li, Xu; Lu, Yue; Guan, Li; Li, Jiantao; Wang, Yichao; Dong, Guoyi; Tang, Aiwei; Teng, Feng

    2016-09-01

    Hybrid organic/inorganic electrically bistable devices (EBDs) based on Cu2S/PVK nanocomposites have been fabricated by using a simple spin-coating method. An obvious electrical bistability is observed in the current-voltage (I-V) characteristics of the devices, and the presence of the buffer layer and the annealing process have an important effect on the enhancement of the ON/OFF current ratios. Different electrical conduction mechanisms are responsible for the charge switching of the devices in the presence and absence of the buffer layer.

  14. Improved performance of polymer solar cells by using inorganic, organic, and doped cathode buffer layers

    NASA Astrophysics Data System (ADS)

    Taohong, Wang; Changbo, Chen; Kunping, Guo; Guo, Chen; Tao, Xu; Bin, Wei

    2016-03-01

    The interface between the active layer and the electrode is one of the most critical factors that could affect the device performance of polymer solar cells. In this work, based on the typical poly(3-hexylthiophene):[6,6]-phenyl C61-butyric acid methyl ester (P3HT:PCBM) polymer solar cell, we studied the effect of the cathode buffer layer (CBL) between the top metal electrode and the active layer on the device performance. Several inorganic and organic materials commonly used as the electron injection layer in an organic light-emitting diode (OLED) were employed as the CBL in the P3HT:PCBM polymer solar cells. Our results demonstrate that the inorganic and organic materials like Cs2CO3, bathophenanthroline (Bphen), and 8-hydroxyquinolatolithium (Liq) can be used as CBL to efficiently improve the device performance of the P3HT:PCBM polymer solar cells. The P3HT:PCBM devices employed various CBLs possess power conversion efficiencies (PCEs) of 3.0%-3.3%, which are ca. 50% improved compared to that of the device without CBL. Furthermore, by using the doped organic materials Bphen:Cs2CO3 and Bphen:Liq as the CBL, the PCE of the P3HT:PCBM device will be further improved to 3.5%, which is ca. 70% higher than that of the device without a CBL and ca. 10% increased compared with that of the devices with a neat inorganic or organic CBL. Project supported by the National Natural Science Foundation of China (Grant No. 61204014), the “Chenguang” Project (13CG42) supported by Shanghai Municipal Education Commission and Shanghai Education Development Foundation, China, and the Shanghai University Young Teacher Training Program of Shanghai Municipality, China.

  15. Control of metamorphic buffer structure and device performance of In(x)Ga(1-x)As epitaxial layers fabricated by metal organic chemical vapor deposition.

    PubMed

    Nguyen, H Q; Yu, H W; Luc, Q H; Tang, Y Z; Phan, V T H; Hsu, C H; Chang, E Y; Tseng, Y C

    2014-12-01

    Using a step-graded (SG) buffer structure via metal-organic chemical vapor deposition, we demonstrate a high suitability of In0.5Ga0.5As epitaxial layers on a GaAs substrate for electronic device application. Taking advantage of the technique's precise control, we were able to increase the number of SG layers to achieve a fairly low dislocation density (∼10(6) cm(-2)), while keeping each individual SG layer slightly exceeding the critical thickness (∼80 nm) for strain relaxation. This met the demanded but contradictory requirements, and even offered excellent scalability by lowering the whole buffer structure down to 2.3 μm. This scalability overwhelmingly excels the forefront studies. The effects of the SG misfit strain on the crystal quality and surface morphology of In0.5Ga0.5As epitaxial layers were carefully investigated, and were correlated to threading dislocation (TD) blocking mechanisms. From microstructural analyses, TDs can be blocked effectively through self-annihilation reactions, or hindered randomly by misfit dislocation mechanisms. Growth conditions for avoiding phase separation were also explored and identified. The buffer-improved, high-quality In0.5Ga0.5As epitaxial layers enabled a high-performance, metal-oxide-semiconductor capacitor on a GaAs substrate. The devices displayed remarkable capacitance-voltage responses with small frequency dispersion. A promising interface trap density of 3 × 10(12) eV(-1) cm(-2) in a conductance test was also obtained. These electrical performances are competitive to those using lattice-coherent but pricey InGaAs/InP systems.

  16. Effects of Membrane- and Catalyst-layer-thickness Nonuniformitiesin Polymer-electrolyte Fuel Cells

    SciTech Connect

    Weber, Adam Z.; Newman, John

    2006-09-01

    In this paper, results from mathematical, pseudo 2-D simulations are shown for four different along-the-channel thickness distributions of both the membrane and cathode catalyst layer. The results and subsequent analysis clearly demonstrate that for the membrane thickness distributions, cell performance is affected a few percent under low relative-humidity conditions and that the position along the gas channel is more important than the local thickness variations. However, for the catalyst-layer thickness distributions, global performance is not impacted, although for saturated conditions there is a large variability in the local temperature and performance depending on the thickness.

  17. Evaluation of methods for application of epitaxial buffer and superconductor layers

    SciTech Connect

    1999-03-30

    The recent achievements of critical currents exceeding million amperes per square centimeter at 77K in YBCO deposited over suitably textured substrate have stimulated interest in the potential applications of coated conductors at high temperatures and in high magnetic fields. Currently, ion-beam assisted deposition (IBAD), and rolling assisted bi-axially textured substrate (RABiTS), represent two available options for obtaining textured substrates. For applying suitable coatings of buffer and high temperature superconductor (HTS) material over textured substrates, several options are available which include sputtering, electron-beam evaporation, laser ablation, electrophoresis, chemical vapor deposition (including metal organics chemical vapor deposition), sol-gel, metal organics decomposition, electrodeposition and aerosol/spray pyrolysis. A commercial continuous long-length wire/tape manufacturing scheme developed out of any suitable combination of the above techniques would consist of operations involving preparation of the substrate and application of buffer, HTS and passivation/insulation materials and special treatment steps such as post-annealing. These operations can be effected by various process parameters that can be classified into chemistry, materials, engineering and environmental related parameters. Under the DOE-sponsored program, to carry out an engineering evaluation, first, the process flow schemes were developed for various candidate options identifying the major operating steps, process conditions, and process streams. Next, to evaluate quantifiable parameters such as process severity (e.g. temperature and pressure), coating thickness and deposition rate for HTS material, achieved maximum J{sub c} value (for films >1{micro}m thick) and cost of chemical and material utilization efficiency, the multi-attribute method was used to determine attributes/merits for various parameters and candidate options. To determine similar attribute values for the

  18. Effect of Ag doping and insulator buffer layer on the memory mechanism of polymer nanocomposites

    NASA Astrophysics Data System (ADS)

    Kaur, Ramneek; Kaur, Jagdish; Tripathi, S. K.

    2015-07-01

    Resistive memory devices based on nanocomposites have attracted great potential for future applications in electronic and optoelectronic devices. The successful synthesis of aqueous CdSe nanoparticles has been provided with UV-Vis and Photoluminescence spectroscopy. The two terminal planar devices of CdSe nanocomposite have been fabricated. The effect of Ag doping and additional dielectric buffer layers on the memory devices have been studied by current-voltage (I-V) and capacitance-voltage (C-V) measurements. The devices show hysteresis loops in both positive and negative bias directions. The memory window has been found to be increased with both Ag doping and PVA layer addition. The charge carrier transport mechanism in the memory devices has been studied by fitting the I-V characteristics with the theoretical model, Space charge conduction model (SCLC). C-V hysteresis loop in both positive and negative bias directions indicate that both the electrons and holes are responsible for memory mechanism of the devices. The switching mechanism of the memory devices has been explained by charge trapping/detrapping model. The retention characteristics show good stability and reliability of the devices.

  19. Superconducting YBa2Cu3O(7-delta) thin films on GaAs with conducting indium-tin-oxide buffer layers

    NASA Astrophysics Data System (ADS)

    Kellett, B. J.; Gauzzi, A.; James, J. H.; Dwir, B.; Pavuna, D.

    1990-12-01

    Superconducting YBa2Cu3O(7-delta) (YBCO) thin films have been grown in situ on GaAs with conducting indium-tin-oxide (ITO) buffer layers. Superconducting onset is about 92 K with zero resistance at 60 K. ITO buffer layers usually form Schottky-like barriers on GaAs. The YBCO film and ITO buffer layer, grown by ion beam sputter codeposition, are textured and polycrystalline with a combined room-temperature resistivity of about 1 milliohm cm.

  20. Effect of Mg doping in ZnO buffer layer on ZnO thin film devices for electronic applications

    NASA Astrophysics Data System (ADS)

    Giri, Pushpa; Chakrabarti, P.

    2016-05-01

    Zinc Oxide (ZnO) thin films have been grown on p-silicon (Si) substrate using magnesium doped ZnO (Mg: ZnO) buffer layer by radio-frequency (RF) sputtering method. In this paper, we have optimized the concentration of Mg (0-5 atomic percent (at. %)) ZnO buffer layer to examine its effect on ZnO thin film based devices for electronic and optoelectronic applications. The crystalline nature, morphology and topography of the surface of the thin film have been characterized. The optical as well as electrical properties of the active ZnO film can be tailored by varying the concentration of Mg in the buffer layer. The crystallite size in the active ZnO thin film was found to increase with the Mg concentration in the buffer layer in the range of 0-3 at. % and subsequently decrease with increasing Mg atom concentration in the ZnO. The same was verified by the surface morphology and topography studies carried out with scanning electron microscope (SEM) and atomic electron microscopy (AFM) respectively. The reflectance in the visible region was measured to be less than 80% and found to decrease with increase in Mg concentration from 0 to 3 at. % in the buffer region. The optical bandgap was initially found to increase from 3.02 eV to 3.74 eV by increasing the Mg content from 0 to 3 at. % but subsequently decreases and drops down to 3.43 eV for a concentration of 5 at. %. The study of an Au:Pd/ZnO Schottky diode reveals that for optimum doping of the buffer layer the device exhibits superior rectifying behavior. The barrier height, ideality factor, rectification ratio, reverse saturation current and series resistance of the Schottky diode were extracted from the measured current voltage (I-V) characteristics.

  1. Assembly and organization of poly(3-hexylthiophene) brushes and their potential use as novel anode buffer layers for organic photovoltaics.

    PubMed

    Alonzo, José; Kochemba, W Michael; Pickel, Deanna L; Ramanathan, Muruganathan; Sun, Zhenzhong; Li, Dawen; Chen, Jihua; Sumpter, Bobby G; Heller, William T; Kilbey, S Michael

    2013-10-01

    Buffer layers that control electrochemical reactions and physical interactions at electrode/film interfaces are key components of an organic photovoltaic cell. Here the structure and properties of layers of semi-rigid poly(3-hexylthiophene) (P3HT) chains tethered at a surface are investigated, and these functional systems are applied in an organic photovoltaic device. Areal density of P3HT chains is readily tuned through the choice of polymer molecular weight and annealing conditions, and insights from optical absorption spectroscopy and semiempirical quantum calculation methods suggest that tethering causes intrachain defects that affect co-facial π-stacking of brush chains. Because of their ability to modify oxide surfaces, P3HT brushes are utilized as an anode buffer layer in a P3HT-PCBM (phenyl-C₆₁-butyric acid methyl ester) bulk heterojunction device. Current-voltage characterization shows a significant enhancement in short circuit current, suggesting the potential of these novel nanostructured buffer layers to replace the PEDOT:PSS buffer layer typically applied in traditional P3HT-PCBM solar cells.

  2. Carbon doped GaN buffer layer using propane for high electron mobility transistor applications: Growth and device results

    SciTech Connect

    Li, X.; Nilsson, D.; Danielsson, Ö.; Pedersen, H.; Janzén, E.; Forsberg, U.; Bergsten, J.; Rorsman, N.

    2015-12-28

    The creation of a semi insulating (SI) buffer layer in AlGaN/GaN High Electron Mobility Transistor (HEMT) devices is crucial for preventing a current path beneath the two-dimensional electron gas (2DEG). In this investigation, we evaluate the use of a gaseous carbon gas precursor, propane, for creating a SI GaN buffer layer in a HEMT structure. The carbon doped profile, using propane gas, is a two stepped profile with a high carbon doping (1.5 × 10{sup 18 }cm{sup −3}) epitaxial layer closest to the substrate and a lower doped layer (3 × 10{sup 16 }cm{sup −3}) closest to the 2DEG channel. Secondary Ion Mass Spectrometry measurement shows a uniform incorporation versus depth, and no memory effect from carbon doping can be seen. The high carbon doping (1.5 × 10{sup 18 }cm{sup −3}) does not influence the surface morphology, and a roughness root-mean-square value of 0.43 nm is obtained from Atomic Force Microscopy. High resolution X-ray diffraction measurements show very sharp peaks and no structural degradation can be seen related to the heavy carbon doped layer. HEMTs are fabricated and show an extremely low drain induced barrier lowering value of 0.1 mV/V, demonstrating an excellent buffer isolation. The carbon doped GaN buffer layer using propane gas is compared to samples using carbon from the trimethylgallium molecule, showing equally low leakage currents, demonstrating the capability of growing highly resistive buffer layers using a gaseous carbon source.

  3. Carbon doped GaN buffer layer using propane for high electron mobility transistor applications: Growth and device results

    NASA Astrophysics Data System (ADS)

    Li, X.; Bergsten, J.; Nilsson, D.; Danielsson, Ö.; Pedersen, H.; Rorsman, N.; Janzén, E.; Forsberg, U.

    2015-12-01

    The creation of a semi insulating (SI) buffer layer in AlGaN/GaN High Electron Mobility Transistor (HEMT) devices is crucial for preventing a current path beneath the two-dimensional electron gas (2DEG). In this investigation, we evaluate the use of a gaseous carbon gas precursor, propane, for creating a SI GaN buffer layer in a HEMT structure. The carbon doped profile, using propane gas, is a two stepped profile with a high carbon doping (1.5 × 1018 cm-3) epitaxial layer closest to the substrate and a lower doped layer (3 × 1016 cm-3) closest to the 2DEG channel. Secondary Ion Mass Spectrometry measurement shows a uniform incorporation versus depth, and no memory effect from carbon doping can be seen. The high carbon doping (1.5 × 1018 cm-3) does not influence the surface morphology, and a roughness root-mean-square value of 0.43 nm is obtained from Atomic Force Microscopy. High resolution X-ray diffraction measurements show very sharp peaks and no structural degradation can be seen related to the heavy carbon doped layer. HEMTs are fabricated and show an extremely low drain induced barrier lowering value of 0.1 mV/V, demonstrating an excellent buffer isolation. The carbon doped GaN buffer layer using propane gas is compared to samples using carbon from the trimethylgallium molecule, showing equally low leakage currents, demonstrating the capability of growing highly resistive buffer layers using a gaseous carbon source.

  4. Aqueous Solution Processed Photoconductive Cathode Interlayer for High Performance Polymer Solar Cells with Thick Interlayer and Thick Active Layer.

    PubMed

    Nian, Li; Chen, Zhenhui; Herbst, Stefanie; Li, Qingyuan; Yu, Chengzhuo; Jiang, Xiaofang; Dong, Huanli; Li, Fenghong; Liu, Linlin; Würthner, Frank; Chen, Junwu; Xie, Zengqi; Ma, Yuguang

    2016-09-01

    An aqueous-solution-processed photoconductive cathode interlayer is developed, in which the photoinduced charge transfer brings multiple advantages such as increased conductivity and electron mobility, as well as reduced work function. Average power conversion efficiency over 10% is achieved even when the thickness of the cathode interlayer and active layer is up to 100 and 300 nm, respectively.

  5. Growth of room-temperature ``arsenic free'' infrared photovoltaic detectors on GaSb substrate using metamorphic InAlSb digital alloy buffer layers

    NASA Astrophysics Data System (ADS)

    Plis, E.; Rotella, P.; Raghavan, S.; Dawson, L. R.; Krishna, S.; Le, D.; Morath, C. P.

    2003-03-01

    We report the growth of a high-quality graded InAlSb digital alloy buffer layer on GaSb substrates. The metamorphic buffer layer relaxes the lattice matching constraint and allows the growth of heterostructures without the use of a second group V element. Cross-sectional transmission electronic microscopy images reveal a very low dislocation density in the buffer layer. Using such a buffer layer, a room-temperature InGaSb photovoltaic detector with λcutoff˜3 μm has been fabricated with an external quantum efficiency >70%.

  6. Change in Tear Film Lipid Layer Thickness, Corneal Thickness, Volume and Topography after Superficial Cauterization for Conjunctivochalasis

    PubMed Central

    Chan, Tommy C. Y.; Ye, Cong; Ng, Paul KF; Li, Emmy Y. M.; Yuen, Hunter K. L.; Jhanji, Vishal

    2015-01-01

    We evaluated the change in tear film lipid layer thickness, corneal thickness, volume and topography after superficial cauterization of symptomatic conjunctivochalasis. Bilateral superficial conjunctival cauterization was performed in 36 eyes of 18 patients with symptomatic conjunctivochalasis. The mean age of patients (12 males, 6 females) was 68.6 ± 10.9 years (range: 44–83 years). Preoperatively, 28 eyes (77.8%) had grade 1 conjunctivochalasis, and 8 eyes (22.2%) had grade 2 conjunctivochalasis. At 1 month postoperatively, the severity of conjunctivochalasis decreased significantly (p < 0.001) and 29 eyes (80.6%) had grade 0 conjunctivochalasis whereas 7 eyes (19.4%) had grade 1 conjunctivochalasis. The mean Ocular Surface Disease Index score decreased from 31.5 ± 15.2 preoperatively to 21.5 ± 14.2 at the end of 1 month postoperatively (p = 0.001). There was a statistically significant increase in mean tear film lipid layer thickness 1 month after the surgery (49.6 ± 16.1 nm vs 62.6 ± 21.6 nm; p < 0.001). The central corneal thickness, thinnest corneal thickness and corneal volume decreased significantly postoperatively (p < 0.001). Our study showed that superficial conjunctival cauterization is an effective technique for management of conjunctivochalasis in the short term. An increase in tear film lipid layer thickness along with a decrease in corneal thickness and volume were observed after surgical correction of conjunctivochalasis. PMID:26184418

  7. Change in Tear Film Lipid Layer Thickness, Corneal Thickness, Volume and Topography after Superficial Cauterization for Conjunctivochalasis.

    PubMed

    Chan, Tommy C Y; Ye, Cong; Ng, Paul K F; Li, Emmy Y M; Yuen, Hunter K L; Jhanji, Vishal

    2015-01-01

    We evaluated the change in tear film lipid layer thickness, corneal thickness, volume and topography after superficial cauterization of symptomatic conjunctivochalasis. Bilateral superficial conjunctival cauterization was performed in 36 eyes of 18 patients with symptomatic conjunctivochalasis. The mean age of patients (12 males, 6 females) was 68.6 ± 10.9 years (range: 44-83 years). Preoperatively, 28 eyes (77.8%) had grade 1 conjunctivochalasis, and 8 eyes (22.2%) had grade 2 conjunctivochalasis. At 1 month postoperatively, the severity of conjunctivochalasis decreased significantly (p < 0.001) and 29 eyes (80.6%) had grade 0 conjunctivochalasis whereas 7 eyes (19.4%) had grade 1 conjunctivochalasis. The mean Ocular Surface Disease Index score decreased from 31.5 ± 15.2 preoperatively to 21.5 ± 14.2 at the end of 1 month postoperatively (p = 0.001). There was a statistically significant increase in mean tear film lipid layer thickness 1 month after the surgery (49.6 ± 16.1 nm vs 62.6 ± 21.6 nm; p < 0.001). The central corneal thickness, thinnest corneal thickness and corneal volume decreased significantly postoperatively (p < 0.001). Our study showed that superficial conjunctival cauterization is an effective technique for management of conjunctivochalasis in the short term. An increase in tear film lipid layer thickness along with a decrease in corneal thickness and volume were observed after surgical correction of conjunctivochalasis. PMID:26184418

  8. Subdivision of thick sedimentary units into layers for simulation of groundwater flow.

    USGS Publications Warehouse

    Weiss, J.S.; Williamson, A.K.

    1985-01-01

    Subdividing thick sedimentary units into model layers based solely on stratigraphy can lead to serious violation of groundwater flow modeling restraints and produce erroneous results. Borehole geophysical data can be used to suggest relative permeabilities and delineate model layers that are more likely to have uniform hydraulic properties than layers delineated by stratigraphic definitions alone. The uniformity within layers emphasizes the permeability contrast between layers, thereby allowing a quasi three-dimensional approach. These methods are applied to the thick sedimentary units of the Gulf Coastal Plain, USA.-from Authors

  9. Growth of Fe3O4(001) thin films on Pt(100): Tuning surface termination with an Fe buffer layer

    NASA Astrophysics Data System (ADS)

    Davis, Earl M.; Zhang, Ke; Cui, Yi; Kuhlenbeck, Helmut; Shaikhutdinov, Shamil; Freund, Hans-Joachim

    2015-06-01

    We studied the preparation of well-ordered thin Fe3O4(001) films on a metallic substrate, Pt(100), using LEED and STM. The results show that film growth either by Fe reactive deposition in oxygen or by deposition-oxidation cycles onto pure Pt(100) results primarily in (111)-oriented surfaces. To grow Fe3O4(001) films, the preparation must include deposition of an Fe buffer layer as previously suggested for the growth of Fe3O4(001) on MgO(001) (Spiridis et al. Phys. Rev. B 74 (2006) 155423). Two stable (so called "dimer"- and B-layer) surface terminations were observed, both exhibiting a (√2 × √2)R450 reconstruction. Several intermediate, Fe-rich terminations were observed during the annealing process of an initially dimer-like structure. The process critically depends on the thickness of the buffer layer, which can be used as a tuning parameter for surface structures.

  10. Improvements in Optical Properties of Semipolar r-Plane GaN Films Grown Using Atomically Flat ZnO Substrates and Room-Temperature Epitaxial Buffer Layers

    NASA Astrophysics Data System (ADS)

    Kobayashi, Atsushi; Kawano, Satoshi; Ueno, Kohei; Ohta, Jitsuo; Fujioka, Hiroshi

    2010-10-01

    We have investigated the structural and optical properties of semipolar r-plane GaN{1102} films grown on nearly-lattice-matched ZnO substrates with room-temperature (RT) epitaxial GaN buffer layers, putting special emphasis on the effect of surface treatment of the ZnO substrates. The full-width at half-maximum values of X-ray rocking curves for 1-µm-thick r-plane GaN layers grown at 700 °C on these RT-buffer layers, as measured using various X-ray incidence geometries, are in a range from 313 to 598 arcsec. Photoluminescence peaks attributable to structural defects in the r-plane GaN films have been shown to be reduced, and the near-band-edge emission has been enhanced by approximately 5 times by the use of atomically-flat r-plane ZnO substrates prepared by high-temperature annealing in air inside a box made of ZnO.

  11. The Effect of Axial Length on the Thickness of Intraretinal Layers of the Macula

    PubMed Central

    Szigeti, Andrea; Tátrai, Erika; Varga, Boglárka Enikő; Szamosi, Anna; DeBuc, Delia Cabrera; Nagy, Zoltán Zsolt; Németh, János; Somfai, Gábor Márk

    2015-01-01

    Purpose The aim of this study was to evaluate the effect of axial length (AL) on the thickness of intraretinal layers in the macula using optical coherence tomography (OCT) image analysis. Methods Fifty three randomly selected eyes of 53 healthy subjects were recruited for this study. The median age of the participants was 29 years (range: 6 to 67 years). AL was measured for each eye using a Lenstar LS 900 device. OCT imaging of the macula was also performed by Stratus OCT. OCTRIMA software was used to process the raw OCT scans and to determine the weighted mean thickness of 6 intraretinal layers and the total retina. Partial correlation test was performed to assess the correlation between the AL and the thickness values. Results Total retinal thickness showed moderate negative correlation with AL (r = -0.378, p = 0.0007), while no correlation was observed between the thickness of the retinal nerve fiber layer (RNFL), ganglion cell layer (GCC), retinal pigment epithelium (RPE) and AL. Moderate negative correlation was observed also between the thickness of the ganglion cell layer and inner plexiform layer complex (GCL+IPL), inner nuclear layer (INL), outer plexiform layer (OPL), outer nuclear layer (ONL) and AL which were more pronounced in the peripheral ring (r = -0.402, p = 0.004; r = -0.429, p = 0.002; r = -0.360, p = 0.01; r = -0.448, p = 0.001). Conclusions Our results have shown that the thickness of the nuclear layers and the total retina is correlated with AL. The reason underlying this could be the lateral stretching capability of these layers; however, further research is warranted to prove this theory. Our results suggest that the effect of AL on retinal layers should be taken into account in future studies. PMID:26544553

  12. Direct determination of the thickness of stratospheric layers from single-channel satellite radiance measurements.

    NASA Technical Reports Server (NTRS)

    Quiroz, R. S.; Gelman, M. E.

    1972-01-01

    The direct use of measured radiances for determining the thickness of stratospheric layers is investigated. Layers based at 100-10 mb, with upper boundaries at 10-0.5 mb, are investigated using a carefully selected family of stratospheric temperature profiles and computed radiances. On the basis of physical reasoning, a high correlation of thickness with radiance is anticipated for deep layers, such as the 100- to 2-mb layer (from about 15 to 43 km), that emit a substantial part of the infrared energy reaching a satellite radiometer in a particular channel. Empirical regression curves relating thickness and radiance are developed and are compared with blackbody curves obtained by substituting the blackbody temperature in the hydrostatic equation. Maximum thickness-radiance correlation is found, for each infrared channel, for the layer having the best agreement of empirical and blackbody curves.

  13. An ultrasonic theoretical and experimental approach to determine thickness and wave speed in layered media.

    PubMed

    de Sousa, Ana Valéria Greco; Pereira, Wagner Coelho de Albuquerque; Machado, João Carlos

    2007-02-01

    This work presents an ultrasonic method to characterize the layers of a stratified medium, using independent measurements of wave speed and thickness of each layer. The model, based on geometrical acoustics, includes refraction. Two transducers are used: one active (3.4 MHz) and a hydrophone as a receptor, which is moved laterally through 15 positions. The distance between the transducers and the delay between the echoes, from the interfaces separating the layers, received by them are used to estimate the speed and thickness. Three types of layered phantoms were used: Ph1 made with alcohol/acrylic, Ph2 made with polyvinyl chloride/water/acrylic, and Ph3 made with acrylic/water/polyvinyl chloride. The experimental results for speed of sound and layer thickness presented an experimental mean relative error, for thickness and wave speed, lower than 7.0% and 6.6%, respectively. PMID:17328335

  14. Effect of layer thickness on the properties of nickel thermal sprayed steel

    NASA Astrophysics Data System (ADS)

    Nurisna, Zuhri; Triyono, Muhayat, Nurul; Wijayanta, Agung Tri

    2016-03-01

    Thermal arc spray nickel coating is widely used for decorative and functional applications, by improving corrosion resistance, wear resistance, heat resistence or by modifying other properties of the coated materials. There are several properties have been studied. Layer thickness of nickel thermal sprayed steel may be make harder the substrate surface. In this study, the effect of layer thickness of nickel thermal sprayed steel has been investigated. The rectangular substrate specimens were coated by Ni-5 wt.% Al using wire arc spray method. The thickness of coating layers were in range from 0.4 to 1.0 mm. Different thickness of coating layers were conducted to investigate their effect on hardness and morphology. The coating layer was examined by using microvickers and scanning electron microscope with EDX attachment. Generally, the hardness at the interface increased with increasing thickness of coating layers for all specimens due to higher heat input during spraying process. Morphology analysis result that during spraying process aluminum would react with surrounding oxygen and form aluminum oxide at outer surface of splat. Moreover, porosity was formed in coating layers. However, presence porosity is not related to thickness of coating material. The thicker coating layer resulted highesr of hardness and bond strength.

  15. Cd-Zn-O-S alloys for optimal buffer layers in thin-film photovoltaics (Presentation Recording)

    NASA Astrophysics Data System (ADS)

    Varley, Joel B.; He, Xiaoqing; Mackie, Neil; Rockett, Angus A.; Lordi, Vincenzo

    2015-09-01

    Advances in thin-film photovoltaics have largely focused on modifying the absorber layer(s), while the choices for other layers in the solar cell stack have remained somewhat limited. In particular, cadmium sulfide (CdS) is widely used as the buffer layer in typical record devices utilizing absorbers like Cu(In,Ga)Se2 (CIGSe) or Cu2ZnSnS4 (CZTS) despite leading to a loss of solar photocurrent due to its band gap of 2.4 eV. While different buffers such as Zn(S,O,OH) are beginning to become competitive with CdS, the identification of additional wider-band gap alternatives with electrical properties comparable to or better than CdS is highly desirable. Here we use hybrid density functional calculations to characterize CdxZn1-xOyS1-y candidate buffer layers in the quaternary phase space composed by Cd, Zn, O, and S. We focus on the band gaps and band offsets of the alloys to assess strategies for improving absorption losses from conventional CdS buffers while maintaining similar conduction band offsets known to facilitate good device performance. We also consider additional criteria such as lattice matching to identify regions in the composition space that may provide improved epitaxy to CIGSe and CZTS absorbers. Lastly, we incorporate our calculated alloy properties into device model simulations of typical CIGSe devices to identify the CdxZn1-xOyS1-y buffer compositions that lead to the best performance. This work performed under the auspices of the U.S. Department of Energy by Lawrence Livermore National Laboratory under Contract DE-AC52-07NA27344 and funded by the Department of Energy office of Energy Efficiency and Renewable Energy (EERE) through the SunShot Bridging Research Interactions through collaborative Development Grants in Energy (BRIDGE) program.

  16. Structural characterization of Nb on sapphire as a buffer layer for MBE growth

    NASA Astrophysics Data System (ADS)

    Reimer, P. M.; Zabel, H.; Flynn, C. P.; Dura, J. A.

    1993-02-01

    Niobium films grown by molecular beam epitaxy on sapphire substrates are among the highest quality ones that thin-film metal science has yet produced. This system is in intense use as a buffer layer for epitaxial growth of other metal thin films, magnetic films and superlattices as well. We studied films of Nb [110] deposited by MBE on Al 2O 3 [11 overline20] substrates using high-precision X-ray diffraction. Rocking curves of the out-of-plane Nb (110) peak reveal a two-component line shape. The sharper component implies a mosaic distribution an order of magnitude sharper than bulk single crystal Nb and a transverse structural coherence length exceeding 10 3 nm. The atomic planes associated with the sharp component are exactly aligned with the sapphire (11 overline20) planes, while those associated with the broad component are slightly misaligned. Upon loading the Nb film with a small amount of hydrogen, we find a further, dramatic increase of the lateral coherence length. The resulting mosaic distribution of the sharp component appears to be limited only by that of the sapphire substrate. We will discuss the results in terms of strain relief by hydrogen-induced dislocation motion.

  17. Rayleigh-Taylor growth and imprint reduction using foam buffer layers on the Omega Laser

    NASA Astrophysics Data System (ADS)

    Watt, R. G.; Duke, J. R.; Elliot, N. E.; Gobby, P. L.; Hollis, R. V.; Kopp, R. A.; Mason, R. J.; Pollak, G.; Wilson, D. C.; Willi, O.; Kalantar, D. H.; Boehly, T. R.; Knauer, J. P.; Meyerhofer, D. D.; Smalyuk, V. A.; Verdon, C. P.

    1997-11-01

    A serious concern for directly driven ICF implosions is the asymmetry imparted to the capsule by laser drive nonuniformities. A distributed phase plate (DPP) with speckle pattern averaged over several coherence times by smoothing with spectral dispersion (SSD) still retains an ``early time imprint''. A supersonically preheated foam, with Au preheat layer, may reduce this imprint, by creating a low density, high temperature thermal plasma between the absorption and ablation surfaces. We report on experiments using machined polystyrene (PS) foams at 30 mg/cc on the Omega laser at 351 nm. The Rayleigh-Taylor growth of intentional solid substrate mass modulations was measured. Similar observed growth with and without foam suggests at most minor isentrope changes in the solid due to the presence of the foam. Significant reduction in the imprint from the OMEGA beams with DPP and distributed polarization rotators (DPR) but without smoothing by spectral dispersion (SSD) is observed when a foam buffer is employed. Recent experimental results will be shown and compared to simulations.

  18. ZnO epitaxy on (111) Si using epitaxial Lu2O3 buffer layers

    NASA Astrophysics Data System (ADS)

    Guo, W.; Allenic, A.; Chen, Y. B.; Pan, X. Q.; Tian, W.; Adamo, C.; Schlom, D. G.

    2008-02-01

    We report the growth and characterization of single-crystalline, crack-free, epitaxial (0001) ZnO films on (111) Si substrates using intervening epitaxial Lu2O3 buffer layers. The epitaxial orientation relationships are (0001)ZnO∥(111)Lu2O3∥(111)Si and [12¯10]ZnO∥[1¯10]Lu2O3∥[11¯0]Si. X-ray diffraction and transmission electron microscopy reveal that the ZnO films have high structural quality and an atomically sharp ZnO /Lu2O3 interface. Temperature-dependent photoluminescence measurements show optical properties comparable to ZnO single crystals. The films have a resistivity of 0.31Ωcm, an electron concentration of 2.5×1017cm-3, and a mobility of 80cm2/Vṡs at room temperature. The epitaxial growth of ZnO on Si represents a significant step toward the integration of ZnO-based multifunctional devices with Si electronics.

  19. Strain states of AlN/GaN-stress mitigating layer and their effect on GaN buffer layer grown by ammonia molecular beam epitaxy on 100-mm Si(111)

    SciTech Connect

    Ravikiran, L.; Radhakrishnan, K.; Agrawal, M.; Dharmarasu, N.; Munawar Basha, S.

    2013-09-28

    The effect of strain states of AlN/GaN-stress mitigating layer (SML) on buried crack density and its subsequent influence on the residual stresses in GaN buffer layers grown using ammonia-molecular beam epitaxy on 100-mm Si(111) substrate has been investigated. Different stages involved in the formation of buried cracks, which are crack initialization, growth of relaxed AlN layer, and subsequent lateral over growth, are identified using in-situ curvature measurements. While the increase of GaN thickness in AlN/GaN-SML enhanced its compressive strain relaxation and resulted in reduced buried crack spacing, the variation of AlN thickness did not show any effect on the crack spacing. Moreover, the decrease in the crack spacing (or increase in the buried crack density) was found to reduce the residual compression in 1st and 2nd GaN layers of AlN/GaN-SML structure. The higher buried crack density relaxed the compressive strain in 1st GaN layer, which further reduced its ability to compensate the tensile stress generated during substrate cool down, and hence resulted in lower residual compressive stress in 2nd GaN layer.

  20. Improving the performance of perovskite solar cells with glycerol-doped PEDOT:PSS buffer layer

    NASA Astrophysics Data System (ADS)

    Jian-Feng, Li; Chuang, Zhao; Heng, Zhang; Jun-Feng, Tong; Peng, Zhang; Chun-Yan, Yang; Yang-Jun, Xia; Duo-Wang, Fan

    2016-02-01

    In this paper, we investigate the effects of glycerol doping on transmittance, conductivity and surface morphology of poly(3,4-ethylene dioxythiophene):poly(styrene sulfonate)) (PEDOT:PSS) and its influence on the performance of perovskite solar cells. . The conductivity of PEDOT:PSS is improved obviously by doping glycerol. The maximum of the conductivity is 0.89 S/cm when the doping concentration reaches 6 wt%, which increases about 127 times compared with undoped. The perovskite solar cells are fabricated with a configuration of indium tin oxide (ITO)/PEDOT:PSS/CH3NH3PbI3/PC61BM/Al, where PEDOT:PSS and PC61BM are used as hole and electron transport layers, respectively. The results show an improvement of hole charge transport as well as an increase of short-circuit current density and a reduction of series resistance, owing to the higher conductivity of the doped PEDOT:PSS. Consequently, it improves the whole performance of perovskite solar cell. The power conversion efficiency (PCE) of the device is improved from 8.57% to 11.03% under AM 1.5 G (100 mW/cm2 illumination) after the buffer layer has been modified. Project supported by the National Natural Science Foundation of China (Grant Nos. 61264002, 61166002, 91333206, and 51463011), the Natural Science Foundation of Gansu Province, China (Grant No. 1308RJZA159), the New Century Excellent Talents in University of Ministry of Education of China (Grant No. NCET-13-0840), the Research Project of Graduate Teacher of Gansu Province, China (Grant No. 2014A-0042), and the Postdoctoral Science Foundation from Lanzhou Jiaotong University, China.

  1. Thickness measurement of multi-layer conductive coatings using multifrequency eddy current techniques

    NASA Astrophysics Data System (ADS)

    Zhang, Dejun; Yu, Yating; Lai, Chao; Tian, Guiyun

    2016-07-01

    To ensure the key structural performance in high-temperature and high-stress environments, thermal barrier coatings (TBCs) are often adopted in engineering. The thickness of these multi-layer conductive coatings is an important quality indicator. In order to measure the thickness of multi-layer conductive coatings, a new measurement approach is presented using eddy current testing techniques, and then, an inversion algorithm is proposed and proved efficient and applicable, of which the maximum experimental relative error is within 10%. Therefore, the new approach can be effectively applied to thickness measurement of multi-layer conductive coatings such as TBCs.

  2. Optimization of the Energy Level Alignment between the Photoactive Layer and the Cathode Contact Utilizing Solution-Processed Hafnium Acetylacetonate as Buffer Layer for Efficient Polymer Solar Cells.

    PubMed

    Yu, Lu; Li, Qiuxiang; Shi, Zhenzhen; Liu, Hao; Wang, Yaping; Wang, Fuzhi; Zhang, Bing; Dai, Songyuan; Lin, Jun; Tan, Zhan'ao

    2016-01-13

    The insertion of an appropriate interfacial buffer layer between the photoactive layer and the contact electrodes makes a great impact on the performance of polymer solar cells (PSCs). Ideal interfacial buffer layers could minimize the interfacial traps and the interfacial barriers caused by the incompatibility between the photoactive layer and the electrodes. In this work, we utilized solution-processed hafnium(IV) acetylacetonate (Hf(acac)4) as an effective cathode buffer layer (CBL) in PSCs to optimize the energy level alignment between the photoactive layer and the cathode contact, with the short-circuit current density (Jsc), open-circuit voltage (Voc), and fill factor (FF) all simultaneously improved with Hf(acac)4 CBL, leading to enhanced power conversion efficiencies (PCEs). Ultraviolet photoemission spectroscopy (UPS) and scanning Kelvin probe microscopy (SKPM) were performed to confirm that the interfacial dipoles were formed with the same orientation direction as the built-in potential between the photoactive layer and Hf(acac)4 CBL, benefiting the exciton separation and electron transport/extraction. In addition, the optical characteristics and surface morphology of the Hf(acac)4 CBL were also investigated.

  3. Physiological variation of segmented OCT retinal layer thicknesses is short-lasting.

    PubMed

    Balk, Lisanne; Mayer, Markus; Uitdehaag, Bernard M J; Petzold, Axel

    2013-12-01

    The application of spectral domain optical coherence tomography as a surrogate for neurodegeneration in a range of neurological disorders demands better understanding of the physiological variation of retinal layer thicknesses, which may mask any value of this emerging outcome measure. A prospective study compared retinal layer thicknesses between control subjects (n = 15) and runners (n = 27) participating in a 10-km charity run. Three scans were performed using an eye-tracking function (EBF) and automated scan registration for optimal precision at (1) baseline, (2) directly after the run, and (3) following a rehydration period. Retinal layer segmentation was performed with suppression of axial retinal vessel signal artifacts. Following the run, there was an increase in the relative retinal nerve fibre layer (p = 0.018), the combined inner plexiform/ganglion cell layer (p = 0.038), and the outer nuclear layer (p = 0.018) in runners compared to controls. The initial increase of thickness in the outer nuclear layer of runners (p < 0.0001) was likely related to (noncompliant) rehydration during exercise. Following a period of rest and rehydration, the difference in thickness change for all retinal layers, except the retinal nerve fibre layer (RNFL) (p < 0.05), disappeared between the two groups. There is a quantifiable change in the axial thickness of retinal layersthat which can be explained by an increase in the cellular volume. This effect may potentially be caused by H2O volume shifts.

  4. Pavement thickness and stabilised foundation layer assessment using ground-coupled GPR

    NASA Astrophysics Data System (ADS)

    Hu, Jinhui; Vennapusa, Pavana K. R.; White, David J.; Beresnev, Igor

    2016-07-01

    Experimental results from field and laboratory investigations using a ground-coupled ground penetrating radar (GPR), dielectric measurement, magnetic imaging tomography (MIT) and dynamic cone penetrometer (DCP) tests are presented. Dielectric properties of asphalt pavement and stabilised and unstabilised pavement foundation materials were evaluated in the laboratory in frozen and unfrozen conditions. Laboratory test results showed that dielectric properties of materials back-calculated from GPR in comparison to dielectric gauge measurements are strongly correlated and repeatable. For chemically stabilised materials, curing time affected the dielectric properties of the materials. Field tests were conducted on asphalt pavement test sections with different foundation materials (stabilised and unstabilised layers), drainage conditions and layer thicknesses. GPR and MIT results were used to determine asphalt layer thicknesses and were compared with measured core thicknesses, while GPR and DCP were used to assess foundation layer profiles. Asphalt thicknesses estimated from GPR showed an average error of about 11% using the dielectric gauge values as input. The average error reduced to about 4% when calibrated with cores thicknesses. MIT results showed thicknesses that are about 9% higher than estimated using GPR. Foundation layer thicknesses could not be measured using GPR due to variations in moisture conditions between the test sections, which is partly attributed to variations in gradation and drainage characteristics of the subbase layer.

  5. Simultaneous enhancement of photovoltage and charge transfer in Cu2O-based photocathode using buffer and protective layers

    NASA Astrophysics Data System (ADS)

    Li, Changli; Hisatomi, Takashi; Watanabe, Osamu; Nakabayashi, Mamiko; Shibata, Naoya; Domen, Kazunari; Delaunay, Jean-Jacques

    2016-07-01

    Coating n-type buffer and protective layers on Cu2O may be an effective means to improve the photoelectrochemical (PEC) water-splitting performance of Cu2O-based photocathodes. In this letter, the functions of the buffer layer and protective layer on Cu2O are examined. It is found that a Ga2O3 buffer layer can form a buried junction with Cu2O, which inhibits Cu2O self-reduction as well as increases the photovoltage through a small conduction band offset between the two semiconductors. The introduction of a TiO2 thin protective layer not only improves the stability of the photocathode but also enhances the electron transfer from the photocathode surface into the electrolyte, thus resulting in an increase in photocurrent at positive potentials. These results show that the selection of overlayers with appropriate conduction band positions provides an effective strategy for obtaining a high photovoltage and high photocurrent in PEC systems.

  6. Influence of the alignment layer and the liquid crystal layer thickness on the characteristics of electrically controlled optical modulators

    NASA Astrophysics Data System (ADS)

    Vasil'Ev, V. N.; Konshina, E. A.; Kostomarov, D. S.; Fedorov, M. A.; Amosova, L. P.; Gavrish, E. O.

    2009-06-01

    The screening effect of the amorphous hydrogenated carbon (a-C:H) alignment layer and its dependence on the thickness of a dual-frequency nematic liquid crystal (NLC) layer have been studied. Optimization of the a-C:H layer thickness allows a threshold voltage for the optical S-effect to be reduced and the characteristic switching time and relaxation time of 0.5 and 2.5 ms, respectively, to be obtained for a phase retardation of 2π at a wavelength of 0.86 μm.

  7. Influence of a front buffer layer on the performance of flexible Cadmium sulfide/Cadmium telluride solar cells

    NASA Astrophysics Data System (ADS)

    Mahabaduge, Hasitha Padmika

    Cadmium telluride (CdTe) solar cells have been developing as a promising candidate for large-scale application of photovoltaic energy conversion and have become the most commercially successful polycrystalline thin-film solar module material. In scaling up from small cells to large-area modules, inevitably non-uniformities across the large area will limit the performance of the large cell or module. The effects of these non-uniformities can be reduced by introducing a thin, high-resistivity transparent buffer layer between the conductive electrodes and the semiconductor diode. ZnO is explored in this dissertation as a high-resistivity transparent buffer layer for sputtered CdTe solar cells and efficiencies over 15% have been achieved on commercially available Pilkington TEC15M glass substrates. The highest open-circuit voltage of 0.858V achieved using the optimized ZnO buffer layer is among the best reported in the literature. The properties of ZnO:Al as a buffer are also investigated. We have shown that ZnO:Al can serve both as a transparent conducting oxide layer as well as a high-resistivity transparent layer for CdTe solar cells. ZnO:Al reactively sputtered with oxygen can give the necessary resistivities that allow it to be used as a high-resistivity transparent layer. Glass is the most common choice as the substrate for solar cells fabricated in the superstrate configuration due to its transparency and mechanical rigidity. However flexible substrates offer the advantages of light weight, high flexibility, ease of integrability and higher throughput through roll-to-roll processing over glass. This dissertation presents significant improvements made to flexible CdTe solar cells reporting an efficiency of 14% on clear KaptonRTM flexible polyimide substrates. Our efficiency of 14% is, to our knowledge, the best for any flexible CdTe cell reported in literature.

  8. Influence of Al-, Co-, Cu-, and In-doped ZnO buffer layers on the structural and the optical properties of ZnO thin films

    NASA Astrophysics Data System (ADS)

    Kim, Younggyu; Choe, Jongyun; Nam, Giwoong; Kim, Ikhyun; Leem, Jae-Young; Lee, Sang-heon; Kim, Soaram; Kim, Do Yeob; Kim, Sung-O.

    2015-01-01

    Zinc oxide (ZnO) thin films without a buffer layer and with Al-, Co-, Cu-, and In-doped ZnO buffer layers were prepared by using the sol-gel spin-coating method. For the first time, the effects of the ZnO buffer layers doped with different metal materials on the structural and the optical properties of the ZnO thin films are investigated. The surface morphologies of the ZnO thin films having wrinkle structures significantly depended on the type of buffer layer. The largest crystallite size and the highest c-axis orientation were observed for the ZnO thin film with a Co-doped ZnO buffer layer. However, the transmittance for the ZnO thin films with metal-doped buffer layers was slightly decreased compared to that without the buffer layer, and metal-doped ZnO buffer layers hardly affected the optical band gap of the ZnO thin films.

  9. Highly sensitive terahertz measurement of layer thickness using a two-cylinder waveguide sensor

    NASA Astrophysics Data System (ADS)

    Theuer, M.; Beigang, R.; Grischkowsky, D.

    2010-08-01

    We report on the layer thickness determination on dielectrically coated metal cylinders using terahertz (THz) time-domain spectroscopy. A considerable sensitivity increase of up to a factor of 150 is obtained for layers down to 2.5 μm thickness by introducing an experimental geometry based on a two-cylinder waveguide sensor. The layer attached on one metal cylinder is guided in contact with the second metal cylinder in the THz beam waist. This approach uses concepts of adiabatic THz wave compression and the advantages of THz waveguides. The results are compared to measurements on free-standing layers.

  10. Asymmetric transmission of acoustic waves in a layer thickness distribution gradient structure using metamaterials

    NASA Astrophysics Data System (ADS)

    Chen, Jung-San; Chang, I.-Ling; Huang, Wan-Ting; Chen, Lien-Wen; Huang, Guan-Hua

    2016-09-01

    This research presents an innovative asymmetric transmission design using alternate layers of water and metamaterial with complex mass density. The directional transmission behavior of acoustic waves is observed numerically inside the composite structure with gradient layer thickness distribution and the rectifying performance of the present design is evaluated. The layer thickness distributions with arithmetic and geometric gradients are considered and the effect of gradient thickness on asymmetric wave propagation is systematically investigated using finite element simulation. The numerical results indicate that the maximum pressure density and transmission through the proposed structure are significantly influenced by the wave propagation direction over a wide range of audible frequencies. Tailoring the thickness of the layered structure enables the manipulation of asymmetric wave propagation within the desired frequency range. In conclusion, the proposed design offers a new possibility for developing directional-dependent acoustic devices.

  11. Quantification of the effect of oil layer thickness on entrainment of surface oil.

    PubMed

    Zeinstra-Helfrich, Marieke; Koops, Wierd; Dijkstra, Klaas; Murk, Albertinka J

    2015-07-15

    This study quantifies the effect of oil layer thickness on entrainment and dispersion of oil into seawater, using a plunging jet with a camera system. In contrast to what is generally assumed, we revealed that for the low viscosity "surrogate MC252 oil" we used, entrainment rate is directly proportional to layer thickness. Furthermore, the volume of stably suspended small oil droplets increases with energy input (plunge height) and is mostly proportional to layer thickness. Oil pre-treated with dispersants (dispersant-oil ratio ranges from 1:50 to 1:300) is greatly entrained in such large amounts of small droplets that quantification was impossible with the camera system. Very low interfacial tension causes entrainment by even minor secondary surface disturbances. Our results indicate that the effect of oil layer thickness should be included in oil entrainment and dispersion modelling. PMID:26002094

  12. Microstructure evolution with varied layer thickness in magnetron-sputtered Ni/C multilayer films

    PubMed Central

    Peng, Jichang; Li, Wenbin; Huang, Qiushi; Wang, Zhanshan

    2016-01-01

    The microstructure evolution of magnetron-sputtered Ni/C multilayers was investigated by varying the Ni and C layer thickness in the region of a few nanometers. For the samples having 2.6-nm-thick C layers, the interface width increases from 0.37 to 0.81 nm as the Ni layer thickness decreases from 4.3 to 1.3 nm. Especially for the samples with Ni layers less than 2.0 nm, the interface width changes significantly due to the discontinuously distributed Ni crystallites. For the samples having 2.8-nm-thick Ni layers, the interface width increases from 0.37 to 0.59 nm when the C layer thickness decreases from 4.3 to 0.7 nm. The evolution of interface microstructures with varied Ni and C layers is explained based on a proposed simple growth model of Ni and C layers. PMID:27515586

  13. Electro-Physical Technique for Post-Fabrication Measurements of CMOS Process Layer Thicknesses

    PubMed Central

    Marshall, Janet C.; Vernier, P. Thomas

    2007-01-01

    This paper1 presents a combined physical and electrical post-fabrication method for determining the thicknesses of the various layers in a commercial 1.5 μm complementary-metal-oxide-semiconductor (CMOS) foundry process available through MOSIS. Forty-two thickness values are obtained from physical step-height measurements performed on thickness test structures and from electrical measurements of capacitances, sheet resistances, and resistivities. Appropriate expressions, numeric values, and uncertainties for each layer of thickness are presented, along with a systematic nomenclature for interconnect and dielectric thicknesses. However, apparent inconsistencies between several of the physical and electrical results for film thickness suggest that further uncertainty analysis is required and the effects of several assumptions need to be quantified. PMID:27110468

  14. Flexible PTB7:PC71BM bulk heterojunction solar cells with a LiF buffer layer

    NASA Astrophysics Data System (ADS)

    Yanagidate, Tatsuki; Fujii, Shunjiro; Ohzeki, Masaya; Yanagi, Yuichiro; Arai, Yuki; Okukawa, Takanori; Yoshida, Akira; Kataura, Hiromichi; Nishioka, Yasushiro

    2014-02-01

    Bulk heterojunction solar cells were fabricated using poly[4,8-bis[(2-ethylhexyl)oxy]benzo [1,2-b:4,5-b‧]dithiophene-2,6-diyl][3-fluoro-2-[(2-ethylhexyl)carbonyl]thieno[3,4-b]-thiophenediyl] (PTB7) and [6,6]-phenyl C71 butyric acid methyl ester (PC71BM) after a layer of poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) was deposited on a flexible indium tin oxide (ITO)-coated polyethylene terephthalate substrate. The fabricated structures were Al/LiF/PTB7:PC71BM/PEDOT:PSS/ITO with or without a lithium fluoride (LiF) buffer layer, and the effect of the LiF buffer layer on the performance of the solar cells was investigated. The LiF layer significantly increased the open-circuit voltages and fill factors of the solar cells, presumably because of the work function shift of the aluminum cathode. As a result, the conversion efficiency increased from 2.31 to 4.02% owing to the presence of the LiF layer. From the results of a stability test, it was concluded that the inserted LiF layer acted as a shielding and scavenging protector, which prevented the intrusion of some chemical species into the active layer, thereby improving the lifetime of the unpakcaged devices.

  15. Enhanced field emission from ZnO nanowire arrays utilizing MgO buffer between seed layer and silicon substrate

    NASA Astrophysics Data System (ADS)

    Chen, Si; Chen, Jiangtao; Liu, Jianlin; Qi, Jing; Wang, Yuhua

    2016-11-01

    Field emitters based on ZnO nanowires and other nanomaterials are promising high-brightness electron sources for field emission display, microscopy and other applications. The performance of a ZnO nanowire field emitter is linked to the quality, conductivity and alignment of the nanowires on a substrate, therefore requiring ways to improve these parameters. Here, ZnO nanowire arrays were grown on ZnO seed layer on silicon substrate with MgO buffer between the seed layer and Si. The turn-on field and enhancement factor of these nanowire arrays are 3.79 V/μm and 3754, respectively. These properties are improved greatly compared to those of ZnO nanowire arrays grown on ZnO seed layer without MgO buffer, which are 5.06 V/μm and 1697, respectively. The enhanced field emission properties can be attributed to better electron transport in seed layer, and better nanowire alignment because of MgO buffer.

  16. Improved high temperature integration of Al2O3 on MoS2 by using a metal oxide buffer layer

    NASA Astrophysics Data System (ADS)

    Son, Seokki; Yu, Sunmoon; Choi, Moonseok; Kim, Dohyung; Choi, Changhwan

    2015-01-01

    We deposited a metal oxide buffer layer before atomic layer deposition (ALD) of Al2O3 onto exfoliated molybdenum disulfide (MoS2) in order to accomplish enhanced integration. We demonstrate that even at a high temperature, functionalization of MoS2 by means of a metal oxide buffer layer can effectively provide nucleation sites for ALD precursors, enabling much better surface coverage of Al2O3. It is shown that using a metal oxide buffer layer not only allows high temperature ALD process, resulting in highly improved quality of Al2O3/MoS2 interface, but also leaves MoS2 intact.

  17. Probing temperature gradients within the GaN buffer layer of AlGaN/GaN high electron mobility transistors with Raman thermography

    SciTech Connect

    Hodges, C. Pomeroy, J.; Kuball, M.

    2014-02-14

    We demonstrate the ability of confocal Raman thermography using a spatial filter and azimuthal polarization to probe vertical temperature gradients within the GaN buffer layer of operating AlGaN/GaN high electron mobility transistors. Temperature gradients in the GaN layer are measured by using offset focal planes to minimize the contribution from different regions of the GaN buffer. The measured temperature gradient is in good agreement with a thermal simulation treating the GaN thermal conductivity as homogeneous throughout the layer and including a low thermal conductivity nucleation layer to model the heat flow between the buffer and substrate.

  18. Retinal nerve fiber layer thickness and visual hallucinations in Parkinson's Disease.

    PubMed

    Lee, Jee-Young; Kim, Jae Min; Ahn, Jeeyun; Kim, Han-Joon; Jeon, Beom S; Kim, Tae Wan

    2014-01-01

    Defective visual information processing from both central and peripheral pathways is one of the suggested mechanisms of visual hallucination in Parkinson's disease (PD). To investigate the role of retinal thinning for visual hallucination in PD, we conducted a case-control study using spectral domain optical coherence tomography. We examined a representative sample of 61 patients with PD and 30 healthy controls who had no history of ophthalmic diseases. General ophthalmologic examinations and optical coherence tomography scans were performed in each participant. Total macular thickness and the thickness of each retinal layer on horizontal scans through the fovea were compared between the groups. In a comparison between patients with PD and healthy controls, there was significant parafoveal inner nuclear layer thinning, whereas other retinal layers, including the retinal nerve fiber layer, as well as total macular thicknesses were not different. In terms of visual hallucinations among the PD subgroups, only retinal nerve fiber layer thickness differed significantly, whereas total macular thickness and the thickness of other retinal layers did not differ. The retinal nerve fiber layer was thinnest in the group that had hallucinations without dementia, followed by the group that had hallucinations with dementia, and the group that had no hallucinations and no dementia. General ophthalmologic examinations did not reveal any significant correlation with hallucinations. There were no significant correlations between retinal thicknesses and duration or severity of PD and medication dosages. The results indicate that retinal nerve fiber layer thinning may be related to visual hallucination in nondemented patients with PD. Replication studies as well as further studies to elucidate the mechanism of thinning are warranted.

  19. Microstructure of a high Jc, laser-ablated YBa 2Cu 3O 7- δ/sol-gel deposited NdGaO 3 buffer layer/(001) SrTiO 3 multi-layer structure

    NASA Astrophysics Data System (ADS)

    Yang, Chau-Yun; Ichinose, Ataru; Babcock, S. E.; Morrell, J. S.; Mathis, J. E.; Verebelyi, D. T.; Paranthaman, M.; Beach, D. B.; Christen, D. K.

    A YBa 2Cu 3O 7- δ (YBCO) film with a transport critical current density ( Jc) value of 1 mA/cm 2 (77 K, 0 T) was grown on a solution deposited NdGaO 3 (NGO) buffer layer on (100) SrTiO 3 (STO). The 25-nm thick NGO buffer layer was dip-coated onto the STO single crystal from a solution of metal methoxyethoxides in 2-methoxyethanol. Pulsed laser deposition (PLD) was used to grow a 250-nm-thick YBCO film on the NGO. The epitaxial relationships are cube-on-cube throughout the structure when the pseudo cubic and pseudo tetragonal unit cells are used to describe the NGO and YBCO crystal structures, respectively: (001) YBCO∥(001) NGO∥(001) STO and [100] YBCO∥[100] NGO∥[100] STO. High resolution scanning electron microscopy (SEM) of the bare NGO surface revealed ∼40 nm diameter pinholes with number density of ∼2×10 13 m -2, corresponding to an area fraction coverage of 2.5%, in an otherwise featureless surface. Cross-sectional transmission electron microscopy (TEM) showed that these pinholes penetrate to the STO; otherwise the NGO layer was uniformly thick to within approximately ±5 nm and defect free. The X-ray diffraction φ- and ω-scans indicated that the YBCO film was highly oriented with a full-width-half maximum peak breadth of 1.14° for in-plane and 0.46° for out-of-plane alignment, respectively. The film contained sparse a-axis oriented grains, an appreciable density of (001) stacking faults and apparently insulating second phase precipitates of the type that typically litter the surface of PLD films. All of these defects are typical of YBCO thin films. High-resolution cross-sectional TEM images indicate that no chemical reaction occurs at the YBCO/NGO interface.

  20. Effect of layer thickness on device response of silicon heavily supersaturated with sulfur

    NASA Astrophysics Data System (ADS)

    Hutchinson, David; Mathews, Jay; Sullivan, Joseph T.; Akey, Austin; Aziz, Michael J.; Buonassisi, Tonio; Persans, Peter; Warrender, Jeffrey M.

    2016-05-01

    We report on a simple experiment in which the thickness of a hyperdoped silicon layer, supersaturated with sulfur by ion implantation followed by pulsed laser melting and rapid solidification, is systematically varied at constant average sulfur concentration, by varying the implantation energy, dose, and laser fluence. Contacts are deposited and the external quantum efficiency (EQE) is measured for visible wavelengths. We posit that the sulfur layer primarily absorbs light but contributes negligible photocurrent, and we seek to support this by analyzing the EQE data for the different layer thicknesses in two interlocking ways. In the first, we use the measured concentration depth profiles to obtain the approximate layer thicknesses, and, for each wavelength, fit the EQE vs. layer thickness curve to obtain the absorption coefficient of hyperdoped silicon for that wavelength. Comparison to literature values for the hyperdoped silicon absorption coefficients [S.H. Pan et al. Applied Physics Letters 98, 121913 (2011)] shows good agreement. Next, we essentially run this process in reverse; we fit with Beer's law the curves of EQE vs. hyperdoped silicon absorption coefficient for those wavelengths that are primarily absorbed in the hyperdoped silicon layer, and find that the layer thicknesses obtained from the fit are in good agreement with the original values obtained from the depth profiles. We conclude that the data support our interpretation of the hyperdoped silicon layer as providing negligible photocurrent at high S concentrations. This work validates the absorption data of Pan et al. [Applied Physics Letters 98, 121913 (2011)], and is consistent with reports of short mobility-lifetime products in hyperdoped layers. It suggests that for optoelectronic devices containing hyperdoped layers, the most important contribution to the above band gap photoresponse may be due to photons absorbed below the hyperdoped layer.

  1. Investigations into alterntive substrate, absorber, and buffer layer processing for Cu(In,Ga)Se{sub 2}-based solar cells

    SciTech Connect

    Tuttle, J.R.; Berens, T.A.; Keane, J.

    1996-05-01

    High-performance Cu(In,Ga)Se{sub 2}(CIGS)-based solar cells are presently fabricated within a narrow range of processing options. In this contribution, alternative substrate, absorber, and buffer layer processing is considered. Cell performance varies considerably when alternative substrates are employed. These variations are narrowed with the addition of Na via a Na{sub 2}S compound. Sputtered and electrodeposited CIGS precursors and completed absorbers show promise as alternatives to evaporation. A recrystallization process is required to improve their quality. (In,Ga){sub y}Se buffer layers contribute to cell performance above 10. Further improvements in these alternatives will lead to combined cell performance greater than 10% in the near term.

  2. Graphene on a metal surface with an h-BN buffer layer: gap opening and N-doping

    NASA Astrophysics Data System (ADS)

    Wang, Tao; Lu, Yunhao; Feng, Y. P.

    2016-04-01

    Graphene grown on a metal surface, Cu(111), with a boron-nitride (h-BN) buffer layer is studied. Our first-principles calculations reveal that charge is transferred from the copper substrate to graphene through the h-BN buffer layer which results in n-doped graphene in the absence of a gate voltage. More importantly, a gap of 0.2 eV, which is comparable to that of a typical narrow gap semiconductor, opens just 0.5 eV below the Fermi level at the Dirac point. The Fermi level can be easily shifted inside this gap to make graphene a semiconductor, which is crucial for graphene-based electronic devices. A graphene-based p-n junction can be realized with graphene eptaxially grown on a metal surface.

  3. Control of Threshold Voltage for Top-Gated Ambipolar Field-Effect Transistor by Gate Buffer Layer.

    PubMed

    Khim, Dongyoon; Shin, Eul-Yong; Xu, Yong; Park, Won-Tae; Jin, Sung-Ho; Noh, Yong-Young

    2016-07-13

    The threshold voltage and onset voltage for p-channel and n-channel regimes of solution-processed ambipolar organic transistors with top-gate/bottom-contact (TG/BC) geometry were effectively tuned by gate buffer layers in between the gate electrode and the dielectric. The work function of a pristine Al gate electrode (-4.1 eV) was modified by cesium carbonate and vanadium oxide to -2.1 and -5.1 eV, respectively, which could control the flat-band voltage, leading to a remarkable shift of transfer curves in both negative and positive gate voltage directions without any side effects. One important feature is that the mobility of transistors is not very sensitive to the gate buffer layer. This method is simple but useful for electronic devices where the threshold voltage should be precisely controlled, such as ambipolar circuits, memory devices, and light-emitting device applications. PMID:27323003

  4. Fabrication of (110)-one-axis-oriented perovskite-type oxide thin films and their application to buffer layer

    NASA Astrophysics Data System (ADS)

    Sato, Tomoya; Ichinose, Daichi; Kimura, Junichi; Inoue, Takaaki; Mimura, Takanori; Funakubo, Hiroshi; Uchiyama, Kiyoshi

    2016-10-01

    BaCe0.9Y0.1O3-δ (BCYO) and SrZr0.8Y0.2O3-δ (SZYO) thin films of perovskite-type oxides were deposited on (111)Pt/TiO x /SiO2/(100)Si substrates. X-ray diffraction patterns showed that the (110)-oriented BCYO and SZYO thin films were grown on (111)Pt/Si substrates directly without using any buffer layers. Thin films of SrRuO3 (SRO), a conductive perovskite-type oxide, were also deposited on those films and highly (110)-oriented SRO thin films were obtained. We believe that this (110)-oriented SRO works as a buffer layer to deposit (110)-oriented perovskite-type ferroelectric oxide thin films as well as a bottom electrode and can modify the ferroelectric properties of the oxide thin films by controlling their crystallographic orientations.

  5. Hybrid layer thickness and morphology: Influence of cavity preparation with air abrasion.

    PubMed

    Barceleiro, Marcos Oliveira; de Mello, Jose Benedicto; Porto, Celso Luis de Angelis; Dias, Katia Regina Hostilio Cervantes; de Miranda, Mauro Sayao

    2011-01-01

    Dentinal surfaces prepared with air abrasion have considerably different characteristics from those prepared with conventional instruments. Different hybrid layer morphology and thickness occur, which can result in differences in the quality of restorations placed on dentinal surfaces prepared with a diamond bur compared to surfaces prepared using air abrasion. The objective of this study was to compare the hybrid layer thickness and morphology formed utilizing Scotchbond Multi-Purpose Plus (SBMP) on dentin prepared with a diamond bur in a high-speed handpiece and on dentin prepared using air abrasion. Flat dentin surfaces obtained from five human teeth were prepared using each method, then treated with the dentin adhesive system according to manufacturer's instructions. After a layer of composite was applied, specimens were sectioned, flattened, polished, and prepared for scanning electron microscopy. Ten different measurements of hybrid layer thickness were obtained along the bonded surface in each specimen. SBMP produced a 3.43 ± 0.75 µm hybrid layer in dentin prepared with diamond bur. This hybrid layer was regular and found consistently. In the air abrasion group, SBMP produced a 4.94 ± 1.28 µm hybrid layer, which was regular and found consistently. Statistical ANOVA (P = 0.05) indicated that there was a statistically significant difference between the groups. These data indicate that the air abrasion, within the parameters used in this study, provides a thick hybrid layer formation.

  6. Hybrid layer thickness and morphology: Influence of cavity preparation with air abrasion.

    PubMed

    Barceleiro, Marcos Oliveira; de Mello, Jose Benedicto; Porto, Celso Luis de Angelis; Dias, Katia Regina Hostilio Cervantes; de Miranda, Mauro Sayao

    2011-01-01

    Dentinal surfaces prepared with air abrasion have considerably different characteristics from those prepared with conventional instruments. Different hybrid layer morphology and thickness occur, which can result in differences in the quality of restorations placed on dentinal surfaces prepared with a diamond bur compared to surfaces prepared using air abrasion. The objective of this study was to compare the hybrid layer thickness and morphology formed utilizing Scotchbond Multi-Purpose Plus (SBMP) on dentin prepared with a diamond bur in a high-speed handpiece and on dentin prepared using air abrasion. Flat dentin surfaces obtained from five human teeth were prepared using each method, then treated with the dentin adhesive system according to manufacturer's instructions. After a layer of composite was applied, specimens were sectioned, flattened, polished, and prepared for scanning electron microscopy. Ten different measurements of hybrid layer thickness were obtained along the bonded surface in each specimen. SBMP produced a 3.43 ± 0.75 µm hybrid layer in dentin prepared with diamond bur. This hybrid layer was regular and found consistently. In the air abrasion group, SBMP produced a 4.94 ± 1.28 µm hybrid layer, which was regular and found consistently. Statistical ANOVA (P = 0.05) indicated that there was a statistically significant difference between the groups. These data indicate that the air abrasion, within the parameters used in this study, provides a thick hybrid layer formation. PMID:22313931

  7. Thermally robust perpendicular Co/Pd-based synthetic antiferromagnetic coupling enabled by a W capping or buffer layer

    PubMed Central

    Lee, Ja-Bin; An, Gwang-Guk; Yang, Seung-Mo; Park, Hae-Soo; Chung, Woo-Seong; Hong, Jin-Pyo

    2016-01-01

    Perpendicularly magnetized tunnel junctions (p-MTJs) that contain synthetic antiferromagnetic (SAF) frames show promise as reliable building blocks to meet the demands of perpendicular magnetic anisotropy (PMA)-based spintronic devices. In particular, Co/Pd multilayer-based SAFs have been widely employed due to their outstanding PMA features. However, the widespread utilization of Co/Pd multilayer SAFs coupled with an adjacent CoFeB reference layer (RL) is still a challenge due to the structural discontinuity or intermixing that occurs during high temperature annealing. Thus, we address the thermally robust characteristics of Co/Pd multilayer SAFs by controlling a W layer as a potential buffer or capping layer. The W-capped Co/Pd multilayer SAF, which acts as a pinning layer, exhibited a wide-range plateau with sharp spin-flip and near-zero remanence at the zero field. Structural analysis of the W-capped multilayer SAF exhibited single-crystal-like c-axis oriented crystalline features after annealing at 400 °C, thereby demonstrating the applicability of these frames. In addition, when the W layer serving as a buffer layer in the Co/Pd multilayer SAF was coupled with a conventional CoFeB RL, higher annealing stability up to 425 °C and prominent antiferromagnetic coupling behavior were obtained. PMID:26887790

  8. Thermally robust perpendicular Co/Pd-based synthetic antiferromagnetic coupling enabled by a W capping or buffer layer

    NASA Astrophysics Data System (ADS)

    Lee, Ja-Bin; An, Gwang-Guk; Yang, Seung-Mo; Park, Hae-Soo; Chung, Woo-Seong; Hong, Jin-Pyo

    2016-02-01

    Perpendicularly magnetized tunnel junctions (p-MTJs) that contain synthetic antiferromagnetic (SAF) frames show promise as reliable building blocks to meet the demands of perpendicular magnetic anisotropy (PMA)-based spintronic devices. In particular, Co/Pd multilayer-based SAFs have been widely employed due to their outstanding PMA features. However, the widespread utilization of Co/Pd multilayer SAFs coupled with an adjacent CoFeB reference layer (RL) is still a challenge due to the structural discontinuity or intermixing that occurs during high temperature annealing. Thus, we address the thermally robust characteristics of Co/Pd multilayer SAFs by controlling a W layer as a potential buffer or capping layer. The W-capped Co/Pd multilayer SAF, which acts as a pinning layer, exhibited a wide-range plateau with sharp spin-flip and near-zero remanence at the zero field. Structural analysis of the W-capped multilayer SAF exhibited single-crystal-like c-axis oriented crystalline features after annealing at 400 °C, thereby demonstrating the applicability of these frames. In addition, when the W layer serving as a buffer layer in the Co/Pd multilayer SAF was coupled with a conventional CoFeB RL, higher annealing stability up to 425 °C and prominent antiferromagnetic coupling behavior were obtained.

  9. Thermally robust perpendicular Co/Pd-based synthetic antiferromagnetic coupling enabled by a W capping or buffer layer.

    PubMed

    Lee, Ja-Bin; An, Gwang-Guk; Yang, Seung-Mo; Park, Hae-Soo; Chung, Woo-Seong; Hong, Jin-Pyo

    2016-01-01

    Perpendicularly magnetized tunnel junctions (p-MTJs) that contain synthetic antiferromagnetic (SAF) frames show promise as reliable building blocks to meet the demands of perpendicular magnetic anisotropy (PMA)-based spintronic devices. In particular, Co/Pd multilayer-based SAFs have been widely employed due to their outstanding PMA features. However, the widespread utilization of Co/Pd multilayer SAFs coupled with an adjacent CoFeB reference layer (RL) is still a challenge due to the structural discontinuity or intermixing that occurs during high temperature annealing. Thus, we address the thermally robust characteristics of Co/Pd multilayer SAFs by controlling a W layer as a potential buffer or capping layer. The W-capped Co/Pd multilayer SAF, which acts as a pinning layer, exhibited a wide-range plateau with sharp spin-flip and near-zero remanence at the zero field. Structural analysis of the W-capped multilayer SAF exhibited single-crystal-like c-axis oriented crystalline features after annealing at 400 °C, thereby demonstrating the applicability of these frames. In addition, when the W layer serving as a buffer layer in the Co/Pd multilayer SAF was coupled with a conventional CoFeB RL, higher annealing stability up to 425 °C and prominent antiferromagnetic coupling behavior were obtained.

  10. Influences and interactions of inundation, peat, and snow on active layer thickness

    DOE PAGESBeta

    Atchley, Adam L.; Coon, Ethan T.; Painter, Scott L.; Harp, Dylan R.; Wilson, Cathy J.

    2016-05-18

    The effect of three environmental conditions: 1) thickness of organic soil, 2) snow depth, and 3) soil moisture content or water table height above and below the soil surface, on active layer thickness (ALT) are investigated using an ensemble of 1D thermal hydrology models. Sensitivity analyses of the ensemble exposed the isolated influence of each environmental condition on ALT and their multivariate interactions. The primary and interactive influences are illustrated in the form of color maps of ALT change. Results show that organic layer acts as a strong insulator, and its thickness is the dominant control of ALT, but themore » strength of the effect of organic layer thickness is dependent on the saturation state. Snow depth, subsurface saturation, and ponded water depth are strongly codependent and positively correlated to ALT.« less

  11. Characteristics of blue organic light emitting diodes with different thick emitting layers

    NASA Astrophysics Data System (ADS)

    Li, Chong; Tsuboi, Taiju; Huang, Wei

    2014-08-01

    We fabricated blue organic light emitting diodes (called blue OLEDs) with emitting layer (EML) of diphenylanthracene derivative 9,10-di(2-naphthyl)anthracene (ADN) doped with blue-emitting DSA-ph (1-4-di-[4-(N,N-di-phenyl)amino]styryl-benzene) to investigate how the thickness of EML and hole injection layer (HIL) influences the electroluminescence characteristics. The driving voltage was observed to increase with increasing EML thickness from 15 nm to 70 nm. The maximum external quantum efficiency of 6.2% and the maximum current efficiency of 14 cd/A were obtained from the OLED with 35 nm thick EML and 75 nm thick HIL. High luminance of 120,000 cd/m2 was obtained at 7.5 V from OLED with 15 nm thick EML.

  12. JKR adhesive contact for a transversely isotropic layer of finite thickness

    NASA Astrophysics Data System (ADS)

    Argatov, I. I.; Borodich, F. M.; Popov, V. L.

    2016-02-01

    A frictionless contact interaction with a circular area of contact between an arbitrary axisymmetric rigid probe and a transversely isotopic elastic layer deposited on a substrate is studied in the framework of the JKR (Johnson, Kendall, and Roberts) adhesion theory. Under the assumption that the diameter of the contact area is less than the thickness of the elastic layer, the forth-order asymptotic model is explicitly written out. The effect of the layer thickness and the material anisotropy is taken into account via the asymptotic coefficients, which are integral characteristics of the elastic layer and also depend on the boundary conditions at the layer/substrate interface. A special case of an isotropic elastic layer bonded to an isotropic elastic half-space is considered in detail.

  13. Enhanced photocurrent density in graphene/Si based solar cell (GSSC) by optimizing active layer thickness

    SciTech Connect

    Rosikhin, Ahmad Hidayat, Aulia Fikri; Syuhada, Ibnu; Winata, Toto

    2015-12-29

    Thickness dependent photocurrent density in active layer of graphene/Si based solar cell has been investigated via analytical – simulation study. This report is a preliminary comparison of experimental and analytical investigation of graphene/Si based solar cell. Graphene sheet was interfaced with Si thin film forming heterojunction solar cell that was treated as a device model for photocurrent generator. Such current can be enhanced by optimizing active layer thickness and involving metal oxide as supporting layer to shift photons absorption. In this case there are two type of devices model with and without TiO{sub 2} in which the silicon thickness varied at 20 – 100 nm. All of them have examined and also compared with each other to obtain an optimum value. From this calculation it found that generated currents almost linear with thickness but there are saturated conditions that no more enhancements will be achieved. Furthermore TiO{sub 2} layer is effectively increases photon absorption but reducing device stability, maximum current is fluctuates enough. This may caused by the disturbance of excitons diffusion and resistivity inside each layer. Finally by controlling active layer thickness, it is quite useful to estimate optimization in order to develop the next solar cell devices.

  14. Y1Ba2Cu3O(6+delta) growth on thin Y-enhanced SiO2 buffer layers on silicon

    NASA Technical Reports Server (NTRS)

    Robin, T.; Mesarwi, A.; Wu, N. J.; Fan, W. C.; Espoir, L.; Ignatiev, A.; Sega, R.

    1991-01-01

    SiO2 buffer layers as thin as 2 nm have been developed for use in the growth of Y1Ba2Cu3O(6+delta) thin films on silicon substrates. The SiO2 layers are formed through Y enhancement of silicon oxidation, and are highly stoichiometric. Y1Ba2Cu3O(6+delta) film growth on silicon with thin buffer layers has shown c orientation and Tc0 = 78 K.

  15. The effects of the porous buffer layer and doping with dysprosium on internal stresses in the GaInP:Dy/por-GaAs/GaAs(100) heterostructures

    SciTech Connect

    Seredin, P. V.; Gordienko, N. N.; Glotov, A. V.; Zhurbina, I. A.; Domashevskaya, E. P.; Arsent'ev, I. N. Shishkov, M. V.

    2009-08-15

    In structures with a porous buffer layer, residual internal stresses caused by a mismatch between the crystal-lattice parameters of the epitaxial GaInP alloy and the GaAs substrate are redistributed to the porous layer that acts as a buffer and is conducive to disappearance of internal stresses. Doping of the epitaxial layer with dysprosium exerts a similar effect on the internal stresses in the film-substrate structure.

  16. Plasma versus thermal annealing for the Au-catalyst growth of ZnO nanocones and nanowires on Al-doped ZnO buffer layers

    NASA Astrophysics Data System (ADS)

    Güell, Frank; Martínez-Alanis, Paulina R.; Roso, Sergio; Salas-Pérez, Carlos I.; García-Sánchez, Mario F.; Santana, Guillermo; Marel Monroy, B.

    2016-06-01

    We successfully synthesized ZnO nanocones and nanowires over polycrystalline Al-doped ZnO (AZO) buffer layers on fused silica substrates by a vapor-transport process using Au-catalyst thin films. Different Au film thicknesses were thermal or plasma annealed in order to analyze their influence on the ZnO nanostructure growth morphology. Striking differences have been observed. Thermal annealing generates a distribution of Au nanoclusters and plasma annealing induces a fragmentation of the Au thin films. While ZnO nanowires are found in the thermal-annealed samples, ZnO nanocones and nanowires have been obtained on the plasma-annealed samples. Enhancement of the preferred c-axis (0001) growth orientation was demonstrated by x-ray diffraction when the ZnO nanocones and nanowires have been grown over the AZO buffer layer. The transmittance spectra of the ZnO nanocones and nanowires show a gradual increase from 375 to 900 nm, and photoluminescence characterization pointed out high concentration of defects leading to observation of a broad emission band in the visible range from 420 to 800 nm. The maximum emission intensity peak position of the broad visible band is related to the thickness of the Au-catalyst for the thermal-annealed samples and to the plasma power for the plasma-annealed samples. Finally, we proposed a model for the plasma versus thermal annealing of the Au-catalyst for the growth of the ZnO nanocones and nanowires. These results are promising for renewable energy applications, in particular for its potential application in solar cells.

  17. Effects of interfacial layer wettability and thickness on the coating morphology and sirolimus release for drug-eluting stent.

    PubMed

    Bedair, Tarek M; Yu, Seung Jung; Im, Sung Gap; Park, Bang Ju; Joung, Yoon Ki; Han, Dong Keun

    2015-12-15

    Drug-eluting stents (DESs) have been used to treat coronary artery diseases by placing in the arteries. However, current DESs still suffer from polymer coating defects such as delamination and peeling-off that follows stent deployment. Such coating defects could increase the roughness of DES and might act as a source of late or very late thrombosis and might increase the incident of restenosis. In this regard, we modified the cobalt-chromium (Co-Cr) alloy surface with hydrophilic poly(2-hydroxyethyl methacrylate) (PHEMA) or hydrophobic poly(2-hydroxyethyl methacrylate)-grafted-poly(caprolactone) (PHEMA-g-PCL) brushes. The resulting surfaces were biocompatible and biodegradable, which could act as anchoring layer for the drug-in-polymer matrix coating. The two modifications were characterized by ATR-FTIR, XPS, water contact angle measurements, SEM and AFM. On the control and modified Co-Cr samples, a sirolimus (SRL)-containing poly(D,L-lactide) (PDLLA) were ultrasonically spray-coated, and the drug release was examined for 8weeks under physiological conditions. The results demonstrated that PHEMA as a primer coating improved the coating stability and degradation morphology, and drug release profile for short-term as compared to control Co-Cr, but fails after 7weeks in physiological buffer. On the other hand, the hydrophobic PHEMA-g-PCL brushes not only enhanced the stability and degradation morphology of the PDLLA coating layer, but also sustained SRL release for long-term. At 8-week of release test, the surface morphologies and release profiles of coated PDLLA layers verified the beneficial effect of hydrophobic PCL brushes as well as their thickness on coating stability. Our study concludes that 200nm thickness of PHEMA-g-PCL as interfacial layer affects the stability and degradation morphology of the biodegradable coating intensively to be applied for various biodegradable-based DESs. PMID:26319336

  18. Effects of interfacial layer wettability and thickness on the coating morphology and sirolimus release for drug-eluting stent.

    PubMed

    Bedair, Tarek M; Yu, Seung Jung; Im, Sung Gap; Park, Bang Ju; Joung, Yoon Ki; Han, Dong Keun

    2015-12-15

    Drug-eluting stents (DESs) have been used to treat coronary artery diseases by placing in the arteries. However, current DESs still suffer from polymer coating defects such as delamination and peeling-off that follows stent deployment. Such coating defects could increase the roughness of DES and might act as a source of late or very late thrombosis and might increase the incident of restenosis. In this regard, we modified the cobalt-chromium (Co-Cr) alloy surface with hydrophilic poly(2-hydroxyethyl methacrylate) (PHEMA) or hydrophobic poly(2-hydroxyethyl methacrylate)-grafted-poly(caprolactone) (PHEMA-g-PCL) brushes. The resulting surfaces were biocompatible and biodegradable, which could act as anchoring layer for the drug-in-polymer matrix coating. The two modifications were characterized by ATR-FTIR, XPS, water contact angle measurements, SEM and AFM. On the control and modified Co-Cr samples, a sirolimus (SRL)-containing poly(D,L-lactide) (PDLLA) were ultrasonically spray-coated, and the drug release was examined for 8weeks under physiological conditions. The results demonstrated that PHEMA as a primer coating improved the coating stability and degradation morphology, and drug release profile for short-term as compared to control Co-Cr, but fails after 7weeks in physiological buffer. On the other hand, the hydrophobic PHEMA-g-PCL brushes not only enhanced the stability and degradation morphology of the PDLLA coating layer, but also sustained SRL release for long-term. At 8-week of release test, the surface morphologies and release profiles of coated PDLLA layers verified the beneficial effect of hydrophobic PCL brushes as well as their thickness on coating stability. Our study concludes that 200nm thickness of PHEMA-g-PCL as interfacial layer affects the stability and degradation morphology of the biodegradable coating intensively to be applied for various biodegradable-based DESs.

  19. Analysis of Retinal Layer Thicknesses and Their Clinical Correlation in Patients with Traumatic Optic Neuropathy

    PubMed Central

    Lee, Ju-Yeun; Cho, Kyuyeon; Park, Kyung-Ah; Oh, Sei Yeul

    2016-01-01

    The aims of this study were 1) To evaluate retinal nerve fiber layer (fRNFL) thickness and ganglion cell layer plus inner plexiform layer (GCIPL) thickness at the fovea in eyes affected with traumatic optic neuropathy (TON) compared with contralateral normal eyes, 2) to further evaluate these thicknesses within 3 weeks following trauma (defined as “early TON”), and 3) to investigate the relationship between these retinal layer thicknesses and visual function in TON eyes. Twenty-nine patients with unilateral TON were included. Horizontal and vertical spectral-domain optical coherence tomography (SD-OCT) scans of the fovea were taken in patients with unilateral TON. The main outcome measure was thickness of the entire retina, fRNFL, and GCIPL in eight areas. Thickness of each retinal layer was compared between affected and unaffected eyes. The correlation between the thickness of each retinal layer and visual function parameters, including best corrected visual acuity, color vision, P100 latency, and P100 amplitude in visual evoked potential (VEP), mean deviation (MD) and visual field index (VFI) in Humphrey visual field analysis in TON eyes was analyzed. Thicknesses of the entire retina, fRNFL, and GCIPL in SD-OCT were significantly thinner (3–36%) in all measurement areas of TON eyes compared to those in healthy eyes (all p<0.05). Whereas, only GCIPL in the outer nasal, superior, and inferior areas was significantly thinner (5–10%) in the early TON eyes than that in the control eyes (all p<0.01). A significant correlation was detected between retinal layer thicknesses and visual function parameters including color vision, P100 latency and P100 amplitude in VEP, MD, and VFI (particularly P100 latency, MD, and VFI) (r = -0.70 to 0.84). Among the retinal layers analyzed in this study, GCIPL (particularly in the superior and inferior areas) was most correlated with these five visual function parameters (r = -0.70 to 0.71). Therefore, evaluation of morphological

  20. High rate buffer layer for IBAD MgO coated conductors

    DOEpatents

    Foltyn, Stephen R.; Jia, Quanxi; Arendt, Paul N.

    2007-08-21

    Articles are provided including a base substrate having a layer of an oriented material thereon, and, a layer of hafnium oxide upon the layer of an oriented material. The layer of hafnium oxide can further include a secondary oxide such as cerium oxide, yttrium oxide, lanthanum oxide, scandium oxide, calcium oxide and magnesium oxide. Such articles can further include thin films of high temperature superconductive oxides such as YBCO upon the layer of hafnium oxide or layer of hafnium oxide and secondary oxide.

  1. Change of retinal nerve fiber layer thickness in patients with nonarteritic inflammatory anterior ischemic optic neuropathy.

    PubMed

    Liu, Tingting; Bi, Hongsheng; Wang, Xingrong; Wang, Guimin; Li, Haiyan; Wu, Hui; Qu, Yi; Wen, Ying; Cong, Chenyang; Wang, Daoguang

    2012-12-15

    In this study, 16 patients (19 eyes) with nonarteritic anterior ischemic optic neuropathy in the acute stage (within 4 weeks) and resolving stage (after 12 weeks) were diagnosed by a series of complete ophthalmic examinations, including fundus examination, optical coherence tomography and fluorescein fundus angiography, and visual field defects were measured with standard automated perimetry. The contralateral uninvolved eyes were used as controls. The retinal nerve fiber layer thickness was determined by optical coherence tomography which showed that the mean retinal nerve fiber layer thickness and the retinal nerve fiber layer thickness from temporal, superior, nasal and inferior quadrants were significantly higher for all measurements in the acute stage than the corresponding normal values. In comparison, the retinal nerve fiber layer thickness from each optic disc quadrant was found to be significantly lower when measured at the resolving stages, than in the control group. Statistical analysis on the correlation between optic disc nerve fiber layer thickness and visual defects demonstrated a positive correlation in the acute stage and a negative correlation in the resolving stage. Our experimental findings indicate that optical coherence tomography is a useful diagnostic method for nonarteritic anterior ischemic optic neuropathy and can be used to evaluate the effect of treatment.

  2. Assessment of Layer Thickness and Interface Quality in CoP Electrodeposited Multilayers.

    PubMed

    Lucas, Irene; Ciudad, David; Plaza, Manuel; Ruiz-Gómez, Sandra; Aroca, Claudio; Pérez, Lucas

    2016-07-27

    The magnetic properties of CoP electrodeposited alloys can be easily controlled by layering the alloys and modulating the P content of the different layers by using pulse plating in the electrodeposition process. However, because of its amorphous nature, the study of the interface quality, which is a limitation for the optimization of the soft magnetic properties of these alloys, becomes a complex task. In this work, we use Rutherford backscattering spectroscopy (RBS) to determine that electrodeposited Co0.74P0.26/Co0.83P0.17 amorphous multilayers with layers down to 20 nm-thick are composed by well-defined layers with interfacial roughness below 3 nm. We have also determined, using magnetostriction measurements, that 4 nm is the lower limitation for the layer thickness. Below this thickness, the layers are mixed and the magnetic behavior of the multilayered films is similar to that shown by single layers, thus going from in-plane to out-of-plane magnetic anisotropy. Therefore, these results establish the range in which the magnetic properties of these alloys can be controlled by layering. PMID:27381897

  3. High-performance hybrid buffer layer using 1,4,5,8,9,11-hexaazatriphenylenehexacarbonitrile/molybdenum oxide in inverted top-emitting organic light-emitting diodes.

    PubMed

    Park, Cheol Hwee; Lee, Hyun Jun; Hwang, Ju Hyun; Kim, Kyu Nyun; Shim, Yong Sub; Jung, Sun-Gyu; Park, Chan Hyuk; Park, Young Wook; Ju, Byeong-Kwon

    2015-03-25

    A high-performance 1,4,5,8,9,11-hexaazatriphenylenehexacarbonitrile (HATCN)/molybdenum oxide (MoO3) hybrid buffer layer with high hole-injection efficiency and superior plasma resistance under the sputtering process was developed. The HATCN enhances the hole-injection efficiency, and the MoO3 effectively protects the underlying organic layers from plasma damage during deposition by sputtering. This improves the characteristics of inverted top-emitting organic light-emitting diodes using a top transparent conductive oxide electrode. The device using the hybrid buffer layer showed the highest electroluminescence characteristics among devices with other buffer layers. The high hole-injection efficiency of HATCN was shown by the J-F curve of hole-only devices, and the plasma protection performance of MoO3 was shown by atomic force microscope surface morphology images of the buffer layer film after O2 plasma treatment.

  4. Focusing of dipole radiation by a negative index chiral layer. 1. A thick layer as compared with the wavelength

    SciTech Connect

    Guzatov, D V; Klimov, V V

    2014-09-30

    We have derived and investigated the analytical expressions for the fields of scattered radiation of an electric dipole source by a chiral (bi-isotropic) layer with arbitrary permittivity and permeability and arbitrary thickness. It is shown that in the negativeindex chiral layer the focus spot of dipole radiation is split due to excitation of right- and left-hand circularly polarised waves. The conditions are found under which the waves with one of the polarisations can be suppressed, which leads to a substantial improvement of the focusing properties of the chiral layer. (metamaterials)

  5. Influence of water layer thickness on hard tissue ablation with pulsed CO2 laser

    NASA Astrophysics Data System (ADS)

    Zhang, Xianzeng; Zhan, Zhenlin; Liu, Haishan; Zhao, Haibin; Xie, Shusen; Ye, Qing

    2012-03-01

    The theory of hard tissue ablation reported for IR lasers is based on a process of thermomechanical interaction, which is explained by the absorption of the radiation in the water component of the tissue. The microexplosion of the water is the cause of tissue fragments being blasted from hard tissue. The aim of this study is to evaluate the influence of the interdependence of water layer thickness and incident radiant exposure on ablation performance. A total of 282 specimens of bovine shank bone were irradiated with a pulse CO2 laser. Irradiation was carried out in groups: without a water layer and with a static water layer of thickness ranging from 0.2 to 1.2 mm. Each group was subdivided into five subgroups for different radiant exposures ranging from 18 to 84 J/cm2, respectively. The incision geometry, surface morphology, and microstructure of the cut walls as well as thermal injury were examined as a function of the water layer thickness at different radiant exposures. Our results demonstrate that the additional water layer is actually a mediator of laser-tissue interaction. There exists a critical thickness of water layer for a given radiant exposure, at which the additional water layer plays multiple roles, not only acting as a cleaner to produce a clean cut but also as a coolant to prevent bone heating and reduce thermal injury, but also helping to improve the regularity of the cut shape, smooth the cut surface, and enhance ablation rate and efficiency. The results suggest that desired ablation results depend on optimal selection of both water layer thickness and radiant exposure.

  6. Variation of bone layer thicknesses and trabecular volume fraction in the adult male human calvarium.

    PubMed

    Boruah, Sourabh; Paskoff, Glenn R; Shender, Barry S; Subit, Damien L; Salzar, Robert S; Crandall, Jeff R

    2015-08-01

    The human calvarium is a sandwich structure with two dense layers of cortical bone separated by porous cancellous bone. The variation of the three dimensional geometry, including the layer thicknesses and the volume fraction of the cancellous layer across the population, is unavailable in the current literature. This information is of particular importance to mathematical models of the human head used to simulate mechanical response. Although the target geometry for these models is the median geometry of the population, the best attempt so far has been the scaling of a unique geometry based on a few median anthropometric measurements of the head. However, this method does not represent the median geometry. This paper reports the average three dimensional geometry of the calvarium from X-ray computed tomography (CT) imaging and layer thickness and trabecular volume fraction from micro CT (μCT) imaging of ten adult male post-mortem human surrogates (PMHS). Skull bone samples have been obtained and μCT imaging was done at a resolution of 30 μm. Monte Carlo simulation was done to estimate the variance in these measurements due to the uncertainty in image segmentation. The layer thickness data has been averaged over areas of 5mm(2). The outer cortical layer was found to be significantly (p < 0.01; Student's t test) thicker than the inner layer (median of thickness ratio 1.68). Although there was significant location to location difference in all the layer thicknesses and volume fraction measurements, there was no trend. Average distribution and the variance of these metrics on the calvarium have been shown. The findings have been reported as colormaps on a 2D projection of the cranial vault. PMID:25920690

  7. Measurement of the dead layer thickness in a p-type point contact germanium detector

    NASA Astrophysics Data System (ADS)

    Jiang, Hao; Yue, Qian; Li, Yu-Lan; Kang, Ke-Jun; Li, Yuan-Jing; Li, Jin; Lin, Shin-Ted; Liu, Shu-Kui; Ma, Hao; Ma, Jing-Lu; Su, Jian; Tsz-King Wong, Henry; Yang, Li-Tao; Zhao, Wei; Zeng, Zhi

    2016-09-01

    A 994 g mass p-type PCGe detector has been deployed during the first phase of the China Dark matter EXperiment, aiming at direct searches for light weakly interacting massive particles. Measuring the thickness of the dead layer of a p-type germanium detector is an issue of major importance since it determines the fiducial mass of the detector. This work reports a method using an uncollimated 133Ba source to determine the dead layer thickness. The experimental design, data analysis and Monte Carlo simulation processes, as well as the statistical and systematic uncertainties are described. A dead layer thickness of 1.02 mm was obtained based on a comparison between the experimental data and the simulated results. Supported by National Natural Science Foundation of China (10935005, 10945002, 11275107, 11175099)

  8. Prediction of Layer Thickness in Molten Borax Bath with Genetic Evolutionary Programming

    NASA Astrophysics Data System (ADS)

    Taylan, Fatih

    2011-04-01

    In this study, the vanadium carbide coating in molten borax bath process is modeled by evolutionary genetic programming (GEP) with bath composition (borax percentage, ferro vanadium (Fe-V) percentage, boric acid percentage), bath temperature, immersion time, and layer thickness data. Five inputs and one output data exist in the model. The percentage of borax, Fe-V, and boric acid, temperature, and immersion time parameters are used as input data and the layer thickness value is used as output data. For selected bath components, immersion time, and temperature variables, the layer thicknesses are derived from the mathematical expression. The results of the mathematical expressions are compared to that of experimental data; it is determined that the derived mathematical expression has an accuracy of 89%.

  9. Significant thickness dependence of the thermal resistance between few-layer graphenes

    NASA Astrophysics Data System (ADS)

    Ni, Yuxiang; Chalopin, Yann; Volz, Sebastian

    2013-08-01

    The inter-layer resistance in few layer graphene (FLG) is an unknown intrinsic property that affects the heat removal efficiency of FLG-based thermal devices. Here we present data that demonstrates the layer number dependence of the resistance between FLGs, by using molecular dynamics simulations. The resistance was found to decrease as the layer number increases. FLGs with larger thicknesses are proposed to be advantageous in heat spreading owing to their lower contact resistances. The observed properties do not depend on temperature, which is crucial for FLG based structures to retain a stable heat removal efficiency while working at a large temperature range.

  10. Effect of Thickness of a Water Repellent Soil Layer on Soil Evaporation Rate

    NASA Astrophysics Data System (ADS)

    Ahn, S.; Im, S.; Doerr, S.

    2012-04-01

    A water repellent soil layer overlying wettable soil is known to affect soil evaporation. This effect can be beneficial for water conservation in areas where water is scarce. Little is known, however, about the effect of the thickness of the water repellent layer. The thickness of this layer can vary widely, and particularly after wildfire, with the soil temperature reached and the duration of the fire. This study was conducted to investigate the effect of thickness of a top layer of water repellent soil on soil evaporation rate. In order to isolate the thickness from other possible factors, fully wettable standard sand (300~600 microns) was used. Extreme water repellency (WDPT > 24 hours) was generated by 'baking' the sand mixed with oven-dried pine needles (fresh needles of Pinus densiflora) at the mass ratio of 1:13 (needle:soil) at 185°C for 18 hours. The thicknesses of water repellent layers were 1, 2, 3 and 7 cm on top of wettable soil. Fully wettable soil columns were prepared as a control. Soil columns (8 cm diameter, 10 cm height) were covered with nylon mesh. Tap water (50 ml, saturating 3 cm of a soil column) was injected with hypoderm syringes from three different directions at the bottom level. The injection holes were sealed with hot-melt adhesive immediately after injection. The rate of soil evaporation through the soil surface was measured by weight change under isothermal condition of 40°C. Five replications were made for each. A trend of negative correlation between the thickness of water repellent top layer and soil evaporation rate is discussed in this contribution.

  11. Diurnal changes in retinal nerve fiber layer thickness with obstructive sleep apnea/hypopnea syndrome

    PubMed Central

    Chirapapaisan, Niphon; Likitgorn, Techawit; Pleumchitchom, Mintra; Sakiyalak, Darin; Banhiran, Wish; Saiman, Manatsawin; Chuenkongkaew, Wanicha

    2016-01-01

    AIM To compare the retinal nerve fiber layer (RNFL) thickness in the morning and evening in Thai patients with varying degrees of obstructive sleep apnea/hypopnea syndrome (OSAHS). METHODS In this cross-sectional study, potential OSAHS patients at Siriraj Hospital underwent polysomnography to determine the severity of OSAHS and an eye examination (including best corrected visual acuity, slit-lamp examination, and Goldmann applanation tonometry). RNFL thickness was recorded once in the morning and once in the evening, using spectral domain optical coherence tomography. Thickness was expressed as an average and given for each quadrant. Patients with ocular or systemic diseases that might affect RNFL thickness were excluded. RESULTS Forty-one eyes of 41 patients were classified into 4 OSAHS groups. The average and mean RNFL thickness in most of the four quadrants of the severe OSAHS group trended toward being less than those in the comparable quadrants of the other groups in both the morning and evening. In the moderate OSAHS group, the average RNFL thickness and temporal and superior quadrant thickness in the morning were significantly higher than in the evening (P=0.01, P=0.01, and P=0.03, respectively). In the severe OSAHS group, the inferior quadrant thickness in the morning was significantly higher than in the evening (P=0.03). CONCLUSION The RNFL thickness in the morning was higher than in the evening in moderate OSAHS. PMID:27500104

  12. Molecular beam epitaxy growth of SrO buffer layers on graphite and graphene for the integration of complex oxides

    NASA Astrophysics Data System (ADS)

    Ahmed, Adam S.; Wen, Hua; Ohta, Taisuke; Pinchuk, Igor V.; Zhu, Tiancong; Beechem, Thomas; Kawakami, Roland K.

    2016-08-01

    We report the successful growth of high-quality SrO films on highly-ordered pyrolytic graphite (HOPG) and single-layer graphene by molecular beam epitaxy. The SrO layers have (001) orientation as confirmed by X-ray diffraction (XRD) while atomic force microscopy measurements show continuous pinhole-free films having rms surface roughness of <1.5 Å. Transport measurements of exfoliated graphene after SrO deposition show a strong dependence between the Dirac point and Sr oxidation. Subsequently, the SrO is leveraged as a buffer layer for more complex oxide integration via the demonstration of (001) oriented SrTiO3 grown atop a SrO/HOPG stack.

  13. Molecular beam epitaxy growth of SrO buffer layers on graphite and graphene for the integration of complex oxides

    DOE PAGESBeta

    Ahmed, Adam S.; Wen, Hua; Ohta, Taisuke; Pinchuk, Igor V.; Zhu, Tiancong; Beechem, Thomas; Kawakami, Roland K.

    2016-04-27

    Here, we report the successful growth of high-quality SrO films on highly-ordered pyrolytic graphite (HOPG) and single-layer graphene by molecular beam epitaxy. The SrO layers have (001) orientation as confirmed by X-ray diffraction (XRD) while atomic force microscopy measurements show continuous pinhole-free films having rms surface roughness of <1.5 Å. Moreover, transport measurements of exfoliated graphene, after SrO deposition, show a strong dependence between the Dirac point and Sr oxidation. As a result, the SrO is leveraged as a buffer layer for more complex oxide integration via the demonstration of (001) oriented SrTiO3 grown atop a SrO/HOPG stack.

  14. Deposition of LaMnO 3 buffer layer on IBAD-MgO template by reactive DC sputtering

    NASA Astrophysics Data System (ADS)

    Kim, H. S.; Oh, S. S.; Ha, H. S.; Ko, R. K.; Ha, D. W.; Kim, T. H.; Youm, D. J.; Lee, N. J.; Moon, S. H.; Yoo, S. I.; Park, C.

    2009-10-01

    The deposition conditions of LaMnO 3 (LMO) buffer layer on Ion Beam Assisted Deposition (IBAD)-MgO template by reactive DC sputtering were investigated. We developed a specially designed chamber for reactive DC magnetron sputtering. The deposition chamber was composed of two sputtering guns with the mixed metallic target of La (50 at%) + Mn (50 at%), halogen lamp heater, QCM (Quartz Crystal Microbalance), RGA (Residual Gas Analyzer) and reel to reel tape moving system. We investigated the effect of oxygen flow rate on the deposition rate of LMO layer. We found that there was an optimal range of oxygen flow rate to have the desired layer. Above the range, the deposition rate decreased sharply and plasma was unstable. Below the range, the deposited layer was partially metallic. We investigated the effect of substrate temperature on the texturing of LMO layer. The texturing of LMO layer was improved by increasing the substrate temperature. We investigated the effect of deposition rate on the texturing of LMO layer. The LMO layer has a good texture in the deposition rate range of 0.07-0.21 nm/s. We confirmed that deposition rate had little effect on the texturing of LMO layer in the deposition rate range. Sm 1Ba 2Cu 3O 7-d superconducting layer was deposited on the LMO(reactive)/IBAD-MgO template. I c and J c were 81.6 A and 1 MA/cm 2. This means that LMO layer deposited by reactive DC sputtering shows a good performance in superconductor coated conductor.

  15. Micrometer-Thick Graphene Oxide-Layered Double Hydroxide Nacre-Inspired Coatings and Their Properties.

    PubMed

    Yan, You-Xian; Yao, Hong-Bin; Mao, Li-Bo; Asiri, Abdullah M; Alamry, Khalid A; Marwani, Hadi M; Yu, Shu-Hong

    2016-02-10

    Robust, functional, and flame retardant coatings are attractive in various fields such as building construction, food packaging, electronics encapsulation, and so on. Here, strong, colorful, and fire-retardant micrometer-thick hybrid coatings are reported, which can be constructed via an enhanced layer-by-layer assembly of graphene oxide (GO) nanosheets and layered double hydroxide (LDH) nanoplatelets. The fabricated GO-LDH hybrid coatings show uniform nacre-like layered structures that endow them good mechanic properties with Young's modulus of ≈ 18 GPa and hardness of ≈ 0.68 GPa. In addition, the GO-LDH hybrid coatings exhibit nacre-like iridescence and attractive flame retardancy as well due to their well-defined 2D microstructures. This kind of nacre-inspired GO-LDH hybrid thick coatings will be applied in various fields in future due to their high strength and multifunctionalities.

  16. Controlled gentamicin release from multi-layered electrospun nanofibrous structures of various thicknesses.

    PubMed

    Sirc, Jakub; Kubinova, Sarka; Hobzova, Radka; Stranska, Denisa; Kozlik, Petr; Bosakova, Zuzana; Marekova, Dana; Holan, Vladimir; Sykova, Eva; Michalek, Jiri

    2012-01-01

    Polyvinyl alcohol nanofibers incorporating the wide spectrum antibiotic gentamicin were prepared by Nanospider™ needleless technology. A polyvinyl alcohol layer, serving as a drug reservoir, was covered from both sides by polyurethane layers of various thicknesses. The multilayered structure of the nanofibers was observed using scanning electron microscopy, the porosity was characterized by mercury porosimetry, and nitrogen adsorption/desorption measurements were used to determine specific surface areas. The stability of the gentamicin released from the electrospun layers was proved by high-performance liquid chromatography (HPLC) and inhibition of bacterial growth. Drug release was investigated using in vitro experiments with HPLC/MS quantification, while the antimicrobial efficacy was evaluated on Gram-positive Staphylococcus aureus and Gram-negative Pseudomonas aeruginosa. Both experiments proved that the released gentamicin retained its activity and showed that the retention of the drug in the nanofibers was prolonged with the increasing thickness of the covering layers. PMID:23071393

  17. Micrometer-Thick Graphene Oxide-Layered Double Hydroxide Nacre-Inspired Coatings and Their Properties.

    PubMed

    Yan, You-Xian; Yao, Hong-Bin; Mao, Li-Bo; Asiri, Abdullah M; Alamry, Khalid A; Marwani, Hadi M; Yu, Shu-Hong

    2016-02-10

    Robust, functional, and flame retardant coatings are attractive in various fields such as building construction, food packaging, electronics encapsulation, and so on. Here, strong, colorful, and fire-retardant micrometer-thick hybrid coatings are reported, which can be constructed via an enhanced layer-by-layer assembly of graphene oxide (GO) nanosheets and layered double hydroxide (LDH) nanoplatelets. The fabricated GO-LDH hybrid coatings show uniform nacre-like layered structures that endow them good mechanic properties with Young's modulus of ≈ 18 GPa and hardness of ≈ 0.68 GPa. In addition, the GO-LDH hybrid coatings exhibit nacre-like iridescence and attractive flame retardancy as well due to their well-defined 2D microstructures. This kind of nacre-inspired GO-LDH hybrid thick coatings will be applied in various fields in future due to their high strength and multifunctionalities. PMID:26682698

  18. Aspects of the SrO-CuO-TiO2 Ternary System Related to the Deposition of SrTiO3 and Copper-Doped SrTiO3 Thin-Film Buffer Layers

    SciTech Connect

    A. Ayala

    2004-12-20

    YBa{sub 2}Cu{sub 3}O{sub 7-{delta}} (YBCO) coated conductors are promising materials for large-scale superconductivity applications. One version of a YBCO coated conductor is based on ion beam assisted deposition (IBAD) of magnesium oxide (MgO) onto polycrystalline metal substrates. SrTiO{sub 3} (STO) is often deposited by physical vapor deposition (PVD) methods as a buffer layer between the YBCO and IBAD MgO due to its chemical stability and lattice mismatch of only {approx}1.5% with YBCO. In this work, some aspects of the stability of STO with respect to copper (Cu) and chemical solution deposition of STO on IBAD MgO templates were examined. Solubility limits of Cu in STO were established by processing Cu-doped STO powders by conventional bulk preparation techniques. The maximum solubility of Cu in STO was {approx}1% as determined by transmission electron microscopy (TEM) and Rietveld refinements of x-ray diffraction (XRD) data. XRD analysis, performed in collaboration with NIST, on powder compositions on the STO/SrCuO{sub 2} tie line did not identify any ternary phases. SrCu{sub 0.10}Ti{sub 0.90}O{sub y} buffer layers were prepared by pulsed laser deposition (PLD) and CSD on IBAD MgO flexible metallic textured tapes. TEM analysis of a {approx}100 nm thick SrCu{sub 0.10}Ti{sub 0.90}O{sub y} buffer layer deposited by PLD showed a smooth Cu-doped STO/MgO interface. A {approx}600 nm thick YBCO film, deposited onto the SrCu{sub 0.10}Ti{sub 0.90}O{sub y} buffer by PLD, exhibited a T{sub c} of 87 K and critical current density (J{sub c}) of {approx}1 MA/cm{sup 2}. STO and Cu-doped STO thin films by CSD were {approx}30 nm thick. The in plane alignment (FWHM) after deposition of the STO improved by {approx}1{sup o} while it degraded by {approx}2{sup o} with the SrCu{sub 0.05}TiO{sub y} buffer. YBCO was deposited by PLD on the STO and SrCu{sub 0.05}TiO{sub y} buffers. The in plane alignment (FWHM) of the YBCO with the STO buffer layer slightly improved while that of the

  19. TEM study of dislocations structure in In0.82Ga0.18As/InP heterostructure with InGaAs as buffer layer

    NASA Astrophysics Data System (ADS)

    Zhao, Liang; Guo, Zuo-xing; Yuan, De-zeng; Wei, Qiu-lin; Zhao, Lei

    2016-05-01

    In order to improve the quality of detector, In x Ga1- x As ( x=0.82) buffer layer has been introduced in In0.82Ga0.18As/InP heterostructure. Dislocation behavior of the multilayer is analyzed through plane and cross section [110] by transmission electron microscopy (TEM) and high resolution transmission electron microscopy (HRTEM). The dislocations are effectively suppressed in In x Ga1- x As ( x=0.82) buffer layer, and the density of dislocations in epilayer is reduced obviously. No lattice mismatch between buffer layer and epilayer results in no misfit dislocation (MD). The threading dislocations (TDs) are directly related to the multiplication of the MDs in buffer layer.

  20. Hierarchical rendering of trees from precomputed multi-layer z-buffers

    SciTech Connect

    Max, N.

    1996-02-01

    Chen and Williams show how precomputed z-buffer images from different fixed viewing positions can be reprojected to produce an image for a new viewpoint. Here images are precomputed for twigs and branches at various levels in the hierarchical structure of a tree, and adaptively combined, depending on the position of the new viewpoint. The precomputed images contain multiple z levels to avoid missing pixels in the reconstruction, subpixel masks for anti-aliasing, and colors and normals for shading after reprojection.

  1. Influence of thickness and permeability of endothelial surface layer on transmission of shear stress in capillaries

    NASA Astrophysics Data System (ADS)

    Zhang, SongPeng; Zhang, XiangJun; Tian, Yu; Meng, YongGang; Lipowsky, Herbert

    2015-07-01

    The molecular coating on the surface of microvascular endothelium has been identified as a barrier to transvascular exchange of solutes. With a thickness of hundreds of nanometers, this endothelial surface layer (ESL) has been treated as a porous domain within which fluid shear stresses are dissipated and transmitted to the solid matrix to initiate mechanotransduction events. The present study aims to examine the effects of the ESL thickness and permeability on the transmission of shear stress throughout the ESL. Our results indicate that fluid shear stresses rapidly decrease to insignificant levels within a thin transition layer near the outer boundary of the ESL with a thickness on the order of ten nanometers. The thickness of the transition zone between free fluid and the porous layer was found to be proportional to the square root of the Darcy permeability. As the permeability is reduced ten-fold, the interfacial fluid and solid matrix shear stress gradients increase exponentially two-fold. While the interfacial fluid shear stress is positively related to the ESL thickness, the transmitted matrix stress is reduced by about 50% as the ESL thickness is decreased from 500 to 100 nm, which may occur under pathological conditions. Thus, thickness and permeability of the ESL are two main factors that determine flow features and the apportionment of shear stresses between the fluid and solid phases of the ESL. These results may shed light on the mechanisms of force transmission through the ESL and the pathological events caused by alterations in thickness and permeability of the ESL.

  2. Synthesis of grafted phosphorylcholine polymer layers as specific recognition ligands for C-reactive protein focused on grafting density and thickness to achieve highly sensitive detection.

    PubMed

    Kamon, Yuri; Kitayama, Yukiya; Itakura, Akiko N; Fukazawa, Kyoko; Ishihara, Kazuhiko; Takeuchi, Toshifumi

    2015-04-21

    We studied the effects of layer thickness and grafting density of poly(2-methacryloyloxyethyl phosphorylcholine) (PMPC) thin layers as specific ligands for the highly sensitive binding of C-reactive protein (CRP). PMPC layer thickness was controlled by surface-initiated activators generated by electron transfer for atom transfer radical polymerization (AGET ATRP). PMPC grafting density was controlled by utilizing mixed self-assembled monolayers with different incorporation ratios of the bis[2-(2-bromoisobutyryloxy)undecyl] disulfide ATRP initiator, as modulated by altering the feed molar ratio with (11-mercaptoundecyl)tetra(ethylene glycol). X-ray photoelectron spectroscopy and ellipsometry measurements were used to characterize the modified surfaces. PMPC grafting densities were estimated from polymer thickness and the molecular weight obtained from sacrificial initiator during surface-initiated AGET ATRP. The effects of thickness and grafting density of the obtained PMPC layers on CRP binding performance were investigated using surface plasmon resonance employing a 10 mM Tris-HCl running buffer containing 140 mM NaCl and 2 mM CaCl2 (pH 7.4). Furthermore, the non-specific binding properties of the obtained layers were investigated using human serum albumin (HSA) as a reference protein. The PMPC layer which has 4.6 nm of thickness and 1.27 chains per nm(2) of grafting density showed highly sensitive CRP detection (limit of detection: 4.4 ng mL(-1)) with low non-specific HSA adsorption, which was improved 10 times than our previous report of 50 ng mL(-1). PMID:25783194

  3. Synthesis of grafted phosphorylcholine polymer layers as specific recognition ligands for C-reactive protein focused on grafting density and thickness to achieve highly sensitive detection.

    PubMed

    Kamon, Yuri; Kitayama, Yukiya; Itakura, Akiko N; Fukazawa, Kyoko; Ishihara, Kazuhiko; Takeuchi, Toshifumi

    2015-04-21

    We studied the effects of layer thickness and grafting density of poly(2-methacryloyloxyethyl phosphorylcholine) (PMPC) thin layers as specific ligands for the highly sensitive binding of C-reactive protein (CRP). PMPC layer thickness was controlled by surface-initiated activators generated by electron transfer for atom transfer radical polymerization (AGET ATRP). PMPC grafting density was controlled by utilizing mixed self-assembled monolayers with different incorporation ratios of the bis[2-(2-bromoisobutyryloxy)undecyl] disulfide ATRP initiator, as modulated by altering the feed molar ratio with (11-mercaptoundecyl)tetra(ethylene glycol). X-ray photoelectron spectroscopy and ellipsometry measurements were used to characterize the modified surfaces. PMPC grafting densities were estimated from polymer thickness and the molecular weight obtained from sacrificial initiator during surface-initiated AGET ATRP. The effects of thickness and grafting density of the obtained PMPC layers on CRP binding performance were investigated using surface plasmon resonance employing a 10 mM Tris-HCl running buffer containing 140 mM NaCl and 2 mM CaCl2 (pH 7.4). Furthermore, the non-specific binding properties of the obtained layers were investigated using human serum albumin (HSA) as a reference protein. The PMPC layer which has 4.6 nm of thickness and 1.27 chains per nm(2) of grafting density showed highly sensitive CRP detection (limit of detection: 4.4 ng mL(-1)) with low non-specific HSA adsorption, which was improved 10 times than our previous report of 50 ng mL(-1).

  4. Physiological variation of retinal layer thickness is not caused by hydration: a randomised trial.

    PubMed

    Balk, Lisanne J; Oberwahrenbrock, Timm; Uitdehaag, Bernard M J; Petzold, Axel

    2014-09-15

    There is evidence for physiological variation of retinal thicknesses as determined by optical coherence tomography (OCT). We tested if such changes could be explained by hydration and would exceed what may be expected from normal ageing. Subjects (n=26) of a previous study were re-assessed and were randomised to 3 groups of a hydration escalation trial (no hydration, 1× hydration, 2× hydration). Automated retinal layer segmentations were performed for the macular retinal nerve fibre layer (RNFL), ganglion cell layer (GCL), inner plexiform layer (IPL), inner nuclear layer (INL), outer plexiform layer (OPL) and outer nuclear layer (ONL). The averaged volumes were calculated for the central foveola, 3 mm and 6 mm circles of the ETDRS grid. Following oral hydration there were no significant differences of retinal layer thicknesses between the three randomised groups in any of the ETDRS regions at any time-point. Ageing related changes were significant over an 18 month period for the GCL. The negative outcome of this trial implies that, until the causes for the observed variation are resolved, investigators may need to accept, and include into trial power calculations, a small degree of variation (<1%) of quantitative SD-OCT imaging either due to human physiology or instrument/software related factors.

  5. Lack of Correlation Between Diabetic Macular Edema and Thickness of the Peripapillary Retinal Nerve Fibre Layer

    PubMed Central

    Alkuraya, Hisham S.; Al-Gehedan, Saeed M.; Alsharif, Abdulrahman M.; Alasbali, Tariq; Lotfy, Nancy M.; Khandekar, Rajiv

    2016-01-01

    Introduction: We compared the thickness of the peripapillary retinal nerve fiber layer (RNFL) in patients with diabetic macular edema (DME) and/against the thickness in the normal population. Methods: This cross-sectional study compared the RNFL thickness in patients with DME (DME group) using optical coherence tomography (OCT) to a comparable group of healthy (nondiabetic) patients (control group). Measurements were performed in different/the four peripapillary quadrants and in the macula region for the fovea, parafoveal, and perifoveal areas. The mean RNFL thickness was compared between both groups. Results: There were fifty eyes of fifty nonglaucomatous diabetic patients with DME (29 with nonproliferative diabetic retinopathy [PDR] and 21 with PDR), and fifty eyes in the control group. The macular regions were significantly thicker in the DME group compared to the control group. The central foveal thickness was 149 μ thicker in eyes with DME compared to the control group (P < 0.001). The difference in total RNFL thickness between groups was not significant (4.4 μ [95% confidence interval: −3.1 to +12]). The between-group differences in peripapillary RNFL thickness by age group, glycemic control, history of intravitreal treatments, and refractive errors were not statistically significant (P > 0.05, all comparisons). Conclusion: Peripapillary RNFL thickness measurements were not significantly influenced by DME. Hence, OCT parameters could be used to monitor/early detect glaucomatous eyes even in the presence of DME. PMID:27555707

  6. Plasma assisted molecular beam epitaxy growth and effect of varying buffer thickness on the formation of ultra-thin In{sub 0.17}Al{sub 0.83}N/GaN heterostructure on Si(111)

    SciTech Connect

    Chowdhury, Subhra; Biswas, Dhrubes

    2015-02-23

    This work reports on the detailed plasma-assisted molecular beam epitaxy (PAMBE) growth of ultra-thin In{sub 0.17}Al{sub 0.83}N/GaN heterostructures on Si(111) substrate with three different buffer thickness (600 nm, 400 nm, and 200 nm). Growth through critical optimization of growth conditions is followed by the investigation of impact of varying buffer thickness on the formation of ultra-thin 1.5 nm, In{sub 0.17}Al{sub 0.83}N–1.25 nm, GaN–1.5 nm, In{sub 0.17}Al{sub 0.83}N heterostructure, in terms of threading dislocation (TD) density. Analysis reveals a drastic reduction of TD density from the order 10{sup 10 }cm{sup −2} to 10{sup 8 }cm{sup −2} with increasing buffer thickness resulting smooth ultra-thin active region for thick buffer structure. Increasing strain with decreasing buffer thickness is studied through reciprocal space mapping analysis. Surface morphology through atomic force microscopy analysis also supports our study by observing an increase of pits and root mean square value (0.89 nm, 1.2 nm, and 1.45 nm) with decreasing buffer thickness which are resulted due to the internal strain and TDs.

  7. Growth of periodic ZnO nano-crystals on buffer layer patterned by interference laser irradiation

    NASA Astrophysics Data System (ADS)

    Nakamura, D.; Shimogaki, T.; Okazaki, K.; Higashihata, M.; Nakata, Y.; Okada, T.

    2013-03-01

    Zinc oxide (ZnO) nano-crystal is great interest for optoelectronic applications in particular ultraviolet (UV) region such as UV-LEDs, UV-lasers, etc. For the practical optoelectronic applications based on the ZnO nanocrystals, control of nanowire growth direction, shape, density, and position are essentially required. In our study, we introduced a ZnO buffer layer and interference laser irradiation to control the growth position of ZnO nanocrystals. In this presentation, structural and morphological characteristics of periodic ZnO nano-crystals synthesized by the nanoparticle-assisted pulsed laser deposition will be discussed.

  8. Thickness Considerations of Two-Dimensional Layered Semiconductors for Transistor Applications.

    PubMed

    Zhang, Youwei; Li, Hui; Wang, Haomin; Xie, Hong; Liu, Ran; Zhang, Shi-Li; Qiu, Zhi-Jun

    2016-01-01

    Layered two-dimensional semiconductors have attracted tremendous attention owing to their demonstrated excellent transistor switching characteristics with a large ratio of on-state to off-state current, Ion/Ioff. However, the depletion-mode nature of the transistors sets a limit on the thickness of the layered semiconductor films primarily determined by a given Ion/Ioff as an acceptable specification. Identifying the optimum thickness range is of significance for material synthesis and device fabrication. Here, we systematically investigate the thickness-dependent switching behavior of transistors with a wide thickness range of multilayer-MoS2 films. A difference in Ion/Ioff by several orders of magnitude is observed when the film thickness, t, approaches a critical depletion width. The decrease in Ion/Ioff is exponential for t between 20 nm and 100 nm, by a factor of 10 for each additional 10 nm. For t larger than 100 nm, Ion/Ioff approaches unity. Simulation using technical computer-aided tools established for silicon technology faithfully reproduces the experimentally determined scaling behavior of Ion/Ioff with t. This excellent agreement confirms that multilayer-MoS2 films can be approximated as a homogeneous semiconductor with high surface conductivity that tends to deteriorate Ion/Ioff. Our findings are helpful in guiding material synthesis and designing advanced field-effect transistors based on the layered semiconductors. PMID:27403803

  9. Thickness Considerations of Two-Dimensional Layered Semiconductors for Transistor Applications

    NASA Astrophysics Data System (ADS)

    Zhang, Youwei; Li, Hui; Wang, Haomin; Xie, Hong; Liu, Ran; Zhang, Shi-Li; Qiu, Zhi-Jun

    2016-07-01

    Layered two-dimensional semiconductors have attracted tremendous attention owing to their demonstrated excellent transistor switching characteristics with a large ratio of on-state to off-state current, Ion/Ioff. However, the depletion-mode nature of the transistors sets a limit on the thickness of the layered semiconductor films primarily determined by a given Ion/Ioff as an acceptable specification. Identifying the optimum thickness range is of significance for material synthesis and device fabrication. Here, we systematically investigate the thickness-dependent switching behavior of transistors with a wide thickness range of multilayer-MoS2 films. A difference in Ion/Ioff by several orders of magnitude is observed when the film thickness, t, approaches a critical depletion width. The decrease in Ion/Ioff is exponential for t between 20 nm and 100 nm, by a factor of 10 for each additional 10 nm. For t larger than 100 nm, Ion/Ioff approaches unity. Simulation using technical computer-aided tools established for silicon technology faithfully reproduces the experimentally determined scaling behavior of Ion/Ioff with t. This excellent agreement confirms that multilayer-MoS2 films can be approximated as a homogeneous semiconductor with high surface conductivity that tends to deteriorate Ion/Ioff. Our findings are helpful in guiding material synthesis and designing advanced field-effect transistors based on the layered semiconductors.

  10. Thickness Considerations of Two-Dimensional Layered Semiconductors for Transistor Applications.

    PubMed

    Zhang, Youwei; Li, Hui; Wang, Haomin; Xie, Hong; Liu, Ran; Zhang, Shi-Li; Qiu, Zhi-Jun

    2016-01-01

    Layered two-dimensional semiconductors have attracted tremendous attention owing to their demonstrated excellent transistor switching characteristics with a large ratio of on-state to off-state current, Ion/Ioff. However, the depletion-mode nature of the transistors sets a limit on the thickness of the layered semiconductor films primarily determined by a given Ion/Ioff as an acceptable specification. Identifying the optimum thickness range is of significance for material synthesis and device fabrication. Here, we systematically investigate the thickness-dependent switching behavior of transistors with a wide thickness range of multilayer-MoS2 films. A difference in Ion/Ioff by several orders of magnitude is observed when the film thickness, t, approaches a critical depletion width. The decrease in Ion/Ioff is exponential for t between 20 nm and 100 nm, by a factor of 10 for each additional 10 nm. For t larger than 100 nm, Ion/Ioff approaches unity. Simulation using technical computer-aided tools established for silicon technology faithfully reproduces the experimentally determined scaling behavior of Ion/Ioff with t. This excellent agreement confirms that multilayer-MoS2 films can be approximated as a homogeneous semiconductor with high surface conductivity that tends to deteriorate Ion/Ioff. Our findings are helpful in guiding material synthesis and designing advanced field-effect transistors based on the layered semiconductors.

  11. Thickness Considerations of Two-Dimensional Layered Semiconductors for Transistor Applications

    PubMed Central

    Zhang, Youwei; Li, Hui; Wang, Haomin; Xie, Hong; Liu, Ran; Zhang, Shi-Li; Qiu, Zhi-Jun

    2016-01-01

    Layered two-dimensional semiconductors have attracted tremendous attention owing to their demonstrated excellent transistor switching characteristics with a large ratio of on-state to off-state current, Ion/Ioff. However, the depletion-mode nature of the transistors sets a limit on the thickness of the layered semiconductor films primarily determined by a given Ion/Ioff as an acceptable specification. Identifying the optimum thickness range is of significance for material synthesis and device fabrication. Here, we systematically investigate the thickness-dependent switching behavior of transistors with a wide thickness range of multilayer-MoS2 films. A difference in Ion/Ioff by several orders of magnitude is observed when the film thickness, t, approaches a critical depletion width. The decrease in Ion/Ioff is exponential for t between 20 nm and 100 nm, by a factor of 10 for each additional 10 nm. For t larger than 100 nm, Ion/Ioff approaches unity. Simulation using technical computer-aided tools established for silicon technology faithfully reproduces the experimentally determined scaling behavior of Ion/Ioff with t. This excellent agreement confirms that multilayer-MoS2 films can be approximated as a homogeneous semiconductor with high surface conductivity that tends to deteriorate Ion/Ioff. Our findings are helpful in guiding material synthesis and designing advanced field-effect transistors based on the layered semiconductors. PMID:27403803

  12. Reduction in Retinal Nerve Fiber Layer Thickness in Young Adults with Autism Spectrum Disorders

    ERIC Educational Resources Information Center

    Emberti Gialloreti, Leonardo; Pardini, Matteo; Benassi, Francesca; Marciano, Sara; Amore, Mario; Mutolo, Maria Giulia; Porfirio, Maria Cristina; Curatolo, Paolo

    2014-01-01

    Recent years have seen an increase in the use of retinal nerve fiber layer (RNFL) evaluation as an easy-to-use, reproducible, proxy-measure of brain structural abnormalities. Here, we evaluated RNFL thickness in a group of subjects with high functioning autism (HFA) or with Asperger Syndrome (AS) to its potential as a tool to study autism…

  13. Relationship between Retinal Layer Thickness and the Visual Field in Early Age-Related Macular Degeneration

    PubMed Central

    Acton, Jennifer H.; Smith, R. Theodore; Hood, Donald C.; Greenstein, Vivienne C.

    2012-01-01

    Purpose. To quantify and compare the structural and functional changes in subjects with early age-related macular degeneration (AMD), using spectral-domain optical coherence tomography (SD-OCT) and microperimetry. Methods. Twenty-one eyes of 21 subjects with early AMD were examined. MP-1 10-2 visual fields (VFs) and SD-OCT line and detail volume scans were acquired. The thicknesses of the outer segment (OS; distance between inner segment ellipsoid band and upper retinal pigment epithelium [RPE] border) and RPE layers and elevation of the RPE from Bruch's membrane were measured using a computer-aided manual segmentation technique. Thickness values were compared with those for 15 controls, and values at locations with VF total deviation defects were compared with values at nondefect locations at equivalent eccentricities. Results. Sixteen of 21 eyes with AMD had VF defects. Compared with controls, line scans showed significant thinning of the OS layer (P = 0.006) and thickening and elevation of the RPE (P = 0.037, P = 0.002). The OS layer was significantly thinner in locations with VF defects compared with locations without defects (P = 0.003). There was a negligible difference between the retinal layer thickness values of the 5 eyes without VF defects and the values of normal controls. Conclusions. In early AMD, when VF defects were present, there was significant thinning of the OS layer and thickening and elevation of the RPE. OS layer thinning was significantly associated with decreased visual sensitivity, consistent with known photoreceptor loss in early AMD. For AMD subjects without VF defects, thickness values were normal. The results highlight the clinical utility of both SD-OCT retinal layer quantification and VF testing in early AMD. PMID:23074210

  14. [Multiplayer white organic light-emitting diodes with different order and thickness of emission layers].

    PubMed

    Xu, Wei; Lu, Fu-Han; Cao, Jin; Zhu, Wen-Qing; Jiang, Xue-Yin; Zhang, Zhi-Lin; Xu, Shao-Hong

    2008-02-01

    In multilayer OLED devices, the order and thickness of the emission layers have great effect on their spectrum. Based on the three basic colours of red, blue and green, a series of white organic light-emitting diodes(WOLEDS)with the structure of ITO/CuPc(12 nm)/NPB(50 nm)/EML/LiF(1 nm)/Al(100 nm) and a variety of emission layer's orders and thicknesses were fabricated. The blue emission material: 2-t-butyl-9,10-di-(2-naphthyl)anthracene (TBADN) doped with p-bis(p-N, N-diphenyl-amono-styryl)benzene(DSA-Ph), the green emission material: tris-[8-hydroxyquinoline]aluminum(Alq3) doped with C545, and the red emission material: tris-[8-hydroxyquinoline]aluminum( Alq3) doped with 4-(dicyanomethylene)-2-t-butyl-6-(1, 1, 7, 7-tetramethyljulolidyl-9-enyl)-4H-pyran (DCJTB) were used. By adjusting the order and thickness of each emission layer in the RBG structure, we got a white OLED with current efficiency of 5.60 cd x A(-1) and Commission Internationale De L'Eclairage (CIE) coordinates of (0. 34, 0.34) at 200 mA x cm(-2). Its maximum luminance reached 20 700 cd x m(-2) at current density of 400 mA x cm(-2). The results were analyzed on the basis of the theory of excitons' generation and diffusion. According to the theory, an equation was set up which relates EL spectra to the luminance efficiency, the thickness of each layer and the exciton diffusion length. In addition, in RBG structure with different thickness of red layer, the ratio of th e spectral intensity of red to that of blue was calculated. It was found that the experimental results are in agreement with the theoretical values. PMID:18479000

  15. Presence and function of a thick mucous layer rich in polysaccharides around Bacillus subtilis spores.

    PubMed

    Faille, Christine; Ronse, Annette; Dewailly, Etienne; Slomianny, Christian; Maes, Emmanuel; Krzewinski, Frédéric; Guerardel, Yann

    2014-01-01

    This study was designed to establish the presence and function of the mucous layer surrounding spores of Bacillus subtilis. First, an external layer of variable thickness and regularity was often observed on B. subtilis spores. Further analyses were performed on B. subtilis 98/7 spores surrounded by a thick layer. The mechanical removal of the layer did not affect their resistance to heat or their ability to germinate but rendered the spore less hydrophilic, more adherent to stainless steel, and more resistant to cleaning. This layer was mainly composed of 6-deoxyhexoses, ie rhamnose, 3-O-methyl-rhamnose and quinovose, but also of glucosamine and muramic lactam, known also to be a part of the bacterial peptidoglycan. The specific hydrolysis of the peptidoglycan using lysozyme altered the structure of the required mucous layer and affected the physico-chemical properties of the spores. Such an outermost mucous layer has also been seen on spores of B. licheniformis and B. clausii isolated from food environments.

  16. Presence and function of a thick mucous layer rich in polysaccharides around Bacillus subtilis spores.

    PubMed

    Faille, Christine; Ronse, Annette; Dewailly, Etienne; Slomianny, Christian; Maes, Emmanuel; Krzewinski, Frédéric; Guerardel, Yann

    2014-01-01

    This study was designed to establish the presence and function of the mucous layer surrounding spores of Bacillus subtilis. First, an external layer of variable thickness and regularity was often observed on B. subtilis spores. Further analyses were performed on B. subtilis 98/7 spores surrounded by a thick layer. The mechanical removal of the layer did not affect their resistance to heat or their ability to germinate but rendered the spore less hydrophilic, more adherent to stainless steel, and more resistant to cleaning. This layer was mainly composed of 6-deoxyhexoses, ie rhamnose, 3-O-methyl-rhamnose and quinovose, but also of glucosamine and muramic lactam, known also to be a part of the bacterial peptidoglycan. The specific hydrolysis of the peptidoglycan using lysozyme altered the structure of the required mucous layer and affected the physico-chemical properties of the spores. Such an outermost mucous layer has also been seen on spores of B. licheniformis and B. clausii isolated from food environments. PMID:25115519

  17. Time-frequency analysis for ultrasonic measurement of liquid-layer thickness

    NASA Astrophysics Data System (ADS)

    Jiao, Jingpin; Liu, Wenhua; Zhang, Jie; Zhang, Qiang; He, Cunfu; Wu, Bin

    2013-02-01

    Lubricant film thickness is one of the most important parameters to indicate the operating condition of machine elements, such as mechanical seals and hydrostatic slideway. When ultrasonic waves illuminate the interfaces between the substrates and a lubricant film, it will be reflected due to the change of the material properties at the interfaces. These reflected ultrasonic waves contain information about film thickness. In this paper, wavelet transform modulus maximum method was explored to extract the film thickness from its reflection ultrasonic signals. The performance of different wavelet functions within various scale factors was experimentally investigated, and the optimal wavelet function with the optimal scale factor was pointed out. It has been shown that the measurement error is less than 5% when the thickness of liquid layer is within a certain range.

  18. Influences and interactions of inundation, peat, and snow on active layer thickness

    NASA Astrophysics Data System (ADS)

    Atchley, Adam L.; Coon, Ethan T.; Painter, Scott L.; Harp, Dylan R.; Wilson, Cathy J.

    2016-05-01

    Active layer thickness (ALT), the uppermost layer of soil that thaws on an annual basis, is a direct control on the amount of organic carbon potentially available for decomposition and release to the atmosphere as carbon-rich Arctic permafrost soils thaw in a warming climate. We investigate how key site characteristics affect ALT using an integrated surface/subsurface permafrost thermal hydrology model. ALT is most sensitive to organic layer thickness followed by snow depth but is relatively insensitive to the amount of water on the landscape with other conditions held fixed. The weak ALT sensitivity to subsurface saturation suggests that changes in Arctic landscape hydrology may only have a minor effect on future ALT. However, surface inundation amplifies the sensitivities to the other parameters and under large snowpacks can trigger the formation of near-surface taliks.

  19. Distortions to current-voltage curves of cigs cells with sputtered Zinc(Oxygen,Sulfur) buffer layers

    NASA Astrophysics Data System (ADS)

    Song, Tao

    Sputtered-deposited Zn(O,S) is an attractive alternative to CdS for Cu(In,Ga)Se 2 (CIGS) thin-film solar cells' buffer layer. It has a higher band gap and thus allows greater blue photon collection to achieve higher photon current. The primary goal of the thesis is to investigate the effects of the secondary barrier at the buffer-absorber interface on the distortions to current-voltage (J-V) curves of sputtered-Zn(O,S)/CIGS solar cells. A straightforward photodiode model is employed in the numerical simulation to explain the physical mechanisms of the experimental J-V distortions including J-V crossover and red kink. It is shown that the secondary barrier is influenced by both the internal material properties, such as the conduction-band offset (CBO) and the doping density of Zn(O,S), and the external conditions, such as the light intensity and operating temperature. A key parameter for the sputter deposition of Zn(O,S) has been the oxygen fraction in the argon beam. It is found that the CBO varies with the oxygen fraction in the argon beam at a fixed temperature. With a greater CBO (DeltaEC>0.3 eV), the resulting energy barrier limits the electron current flowing across the interface and thus leads to the J-V distortion. Two different ZnS targets, non-indium and indium-doped one, were used to deposit the Zn(O,S) buffer layer. At the same oxygen fraction in argon beam, a non-In-doped Zn(O,S) buffer with a smaller amount of doping forms a greater secondary barrier to limit the electron current due to the compensation of the Zn(O,S) buffer layer. In addition, the temperature-dependent J-V crossover can be explained by the temperature-dependent impact of the secondary barrier - at lower temperature in the dark, the maximum distortion-free barrier is reduced and results in a more serious current limitation, indicating a greater J-V crossover. It is also found that, under low-intensity illumination, there is a lower doping density of Zn(O,S) due to a smaller amount of

  20. Layer thickness and period as design parameters to tailor pyroelectric properties in ferroelectric superlattices

    SciTech Connect

    Misirlioglu, I. B.; Alpay, S. P.

    2014-10-27

    We theoretically examine the pyroelectric properties of ferroelectric-paraelectric superlattices as a function of layer thickness and configuration using non-linear thermodynamics coupled with electrostatic and electromechanical interactions between layers. We specifically study PbZr{sub 0.3}Ti{sub 0.7}O{sub 3}/SrTiO{sub 3} superlattices. The pyroelectric properties of such constructs consisting of relatively thin repeating units are shown to exceed the pyroelectric response of monolithic PbZr{sub 0.3}Ti{sub 0.7}O{sub 3} films. This is related to periodic internal electric fields generated due to the polarization mismatch between layers that allows tailoring of the shift in the transition temperature. Our results indicate that higher and electric field sensitive pyroresponse can be achieved from layer-by-layer engineered ferroelectric heterostructures.

  1. Optical coherence tomography layer thickness characterization of a mock artery during angioplasty balloon deployment

    NASA Astrophysics Data System (ADS)

    Azarnoush, Hamed; Vergnole, Sébastien; Boulet, Benoît; Lamouche, Guy

    2011-03-01

    Optical coherence tomography (OCT) is used to study the deformation of a mock artery in an angioplasty simulation setup. An OCT probe integrated in a balloon catheter provides intraluminal real-time images during balloon inflation. Swept-source OCT is used for imaging. A 4 mm semi-compliant polyurethane balloon is used for experiments. The balloon is inflated inside a custom-built multi-layer artery phantom. The phantom has three layers to mock artery layers, namely, intima, media and adventitia. Semi-automatic segmentation of phantom layers is performed to provide a detailed assessment of the phantom deformation at various inflation pressures. Characterization of luminal diameter and thickness of different layers of the mock artery is provided for various inflation pressures.

  2. Study of the effects of GaN buffer layer quality on the dc characteristics of AlGaN/GaN high electron mobility transistors

    SciTech Connect

    Ahn, Shihyun; Zhu, Weidi; Dong, Chen; Le, Lingcong; Hwang, Ya-Hsi; Kim, Byung-Jae; Ren, Fan; Pearton, Stephen J.; Lind, Aaron G.; Jones, Kevin S.; Kravchenko, I. I.; Zhang, Ming-Lan

    2015-04-21

    Here we studied the effect of buffer layer quality on dc characteristics of AlGaN/GaN high electron mobility (HEMTs). AlGaN/GaN HEMT structures with 2 and 5 μm GaN buffer layers on sapphire substrates from two different vendors with the same Al concentration of AlGaN were used. The defect densities of HEMT structures with 2 and 5 μm GaN buffer layer were 7 × 109 and 5 × 108 cm₋2, respectively, as measured by transmission electron microscopy. There was little difference in drain saturation current or in transfer characteristics in HEMTs on these two types of buffer. However, there was no dispersion observed on the nonpassivated HEMTs with 5 μm GaN buffer layer for gate-lag pulsed measurement at 100 kHz, which was in sharp contrast to the 71% drain current reduction for the HEMT with 2 μm GaN buffer layer.

  3. Study of the effects of GaN buffer layer quality on the dc characteristics of AlGaN/GaN high electron mobility transistors

    DOE PAGESBeta

    Ahn, Shihyun; Zhu, Weidi; Dong, Chen; Le, Lingcong; Hwang, Ya-Hsi; Kim, Byung-Jae; Ren, Fan; Pearton, Stephen J.; Lind, Aaron G.; Jones, Kevin S.; et al

    2015-04-21

    Here we studied the effect of buffer layer quality on dc characteristics of AlGaN/GaN high electron mobility (HEMTs). AlGaN/GaN HEMT structures with 2 and 5 μm GaN buffer layers on sapphire substrates from two different vendors with the same Al concentration of AlGaN were used. The defect densities of HEMT structures with 2 and 5 μm GaN buffer layer were 7 × 109 and 5 × 108 cm₋2, respectively, as measured by transmission electron microscopy. There was little difference in drain saturation current or in transfer characteristics in HEMTs on these two types of buffer. However, there was no dispersionmore » observed on the nonpassivated HEMTs with 5 μm GaN buffer layer for gate-lag pulsed measurement at 100 kHz, which was in sharp contrast to the 71% drain current reduction for the HEMT with 2 μm GaN buffer layer.« less

  4. Microstructural evaluation of Sb-adjusted Al{sub 0.5}Ga{sub 0.5}As{sub 1{minus}y}Sb{sub y} buffer layer systems for IR applications

    SciTech Connect

    Chen, E.; Paine, D.C.; Uppal, P.; Ahearn, J.S.; Nichols, K.; Charache, G.W.

    1998-06-01

    The authors report on a transmission electron microscopy (TEM) study of Sb-adjusted quaternary Al{sub 0.5}Ga{sub 0.5}As{sub 1{minus}y}Sb{sub y} buffer-layers grown on <001> GaAs substrates. A series of structures were grown by MBE at 470 C that utilize a multilayer grading scheme in which the Sb content of Al{sub 0.5}Ga{sub 0.5}As{sub 1{minus}y}Sb{sub y} buffer-layers grown on <001> GaAs substrates. A series of structures were grown by MBe at 470 C that utilize a multilayer grading scheme in which the Sb content of Al{sub 0.5}Ga{sub 0.5}As{sub 1{minus}y}Sb{sub y} is successively increased in a series of 125 nm thick layers. Post growth analysis using conventional bright field and weak beam dark field imaging of these buffer layers in cross-section reveals that the interface misfit dislocations are primarily of the 60{degree} type and are distributed through out the interfaces of the buffer layer. When optimized, the authors have shown, using plan view and cross-sectional TEM, that this approach can reduce the threading defect density to below the detectability limit of TEM (< 10{sup 5}/cm{sup 2}) and preserve growth surface planarity. The Sb-graded approach was used to fabricate two 2.2 {micro}m power converter structures fabricated using InGaAs grown on Sb-based buffer layers on GaAs substrates. A microstructural and electrical characterization was performed on these device structures and the results are contrasted with a sample in which InP was selected as the substrate. Microstructure, defect density and device performance in these not-yet-optimized Sb-based buffer layers compares favorably to equivalent devices fabricated using InP substrates.

  5. Solid contact ion-selective electrodes with a well-controlled Co(II)/Co(III) redox buffer layer.

    PubMed

    Zou, Xu U; Cheong, Jia H; Taitt, Brandon J; Bühlmann, Philippe

    2013-10-01

    Solid contact ion-selective electrodes (ISEs) typically have an intermediate layer between the ion-selective membrane and the underlying solid electron conductor that is designed to reduce the irreproducibility and instability of the measured electromotive force (emf). Nevertheless, the electrode-to-electrode reproducibility of the emf of current solid contact ISEs is widely considered to be unsatisfactory. To address this problem, we report here a new method of constructing this intermediate layer based on the lipophilic redox buffer consisting of the Co(III) and Co(II) complexes of 1,10-phenanthroline ([Co(phen)3](3+/2+)) paired with tetrakis(pentafluorophenyl)borate as counterion. The resulting electrodes exhibit emf values with an electrode-to-electrode standard deviation as low as 1.7 mV after conditioning of freshly prepared electrodes for 1 h. While many prior examples of solid contact ISEs also used intermediate layers that contained redox active species, the selection of a balanced ratio of the reduced and oxidized species has typically been difficult and was often ignored, contributing to the emf irreproducibility. The ease of the control of the [Co(phen)3](3+)/[Co(phen)3](2+) ratio explains the high emf reproducibility, as confirmed by the emf decrease of 58 mV per 10-fold increase in the ratio of the reduced and oxidized redox buffer species. Use of a gold electrode modified with a self-assembled 1-hexanethiol monolayer as underlying electron conductor suppresses the formation of a water layer and results in an electrode-to-electrode standard deviation of E° of 1.0 mV after 2 weeks of exposure to KCl solution. PMID:24047234

  6. GaN Epitaxial Layer Grown with Conductive Al(x)Ga(1-x)N Buffer Layer on SiC Substrate Using Metal Organic Chemical Vapor Deposition.

    PubMed

    So, Byeongchan; Lee, Kyungbae; Lee, Kyungjae; Heo, Cheon; Pyeon, Jaedo; Ko, Kwangse; Jang, Jongjin; Nam, Okhyun

    2016-05-01

    This study investigated GaN epitaxial layer growth with a conductive Al(x)Ga(1-x)N buffer layer on n-type 4H-SiC by high-temperature metalorganic chemical vapor deposition (HT-MOCVD). The Al composition of the Al(x)Ga(1-x)N buffer was varied from 0% to 100%. In terms of the crystal quality of the GaN layer, 79% Al was the optimal composition of the Al(x)Ga(1-x)N buffer layer in our experiment. A vertical conductive structure was fabricated to measure the current voltage (I-V) characteristics as a function of Al composition, and the I-V curves showed that the resistance increased with increasing Al concentration of the Al(x)Ga(1-x)N buffer layer. PMID:27483845

  7. Preparation and properties of highly (100)-oriented Pb(Zr{sub 0.2}Ti{sub 0.8})O{sub 3} thin film prepared by rf magnetron sputtering with a PbO{sub x} buffer layer

    SciTech Connect

    Wu, Jiagang; Zhu, Jiliang; Xiao, Dingquan; Zhu, Jianguo; Tan, Junzhe; Zhang, Qinglei

    2007-05-01

    A method for fabrication of highly (100)-oriented Pb(Zr{sub 0.2}Ti{sub 0.8})O{sub 3} (PZT) thin films by rf magnetron sputtering with a special buffer of PbO{sub x} (RFMS-SBP) was developed. With this method, highly (100)-oriented Pb(Zr{sub 0.2}Ti{sub 0.8})O{sub 3} thin films were prepared on the PbO{sub x}/Pt(111)/Ti/SiO{sub 2}/Si(100) substrates, and the preferential (100) orientation of the Pb(Zr{sub 0.2}Ti{sub 0.8})O{sub 3} film is 92%. The (100) orientation of the PbO{sub x} buffer layer leads to the (100) orientation of the PZT thin films, and the thickness of the buffer layer plays a significant role on the phase purity and electrical properties of the films. Highly (100)-oriented Pb(Zr{sub 0.2}Ti{sub 0.8})O{sub 3} thin films with proper thickness of PbO{sub x} buffer layer possess good electrical properties with larger remnant polarization P{sub r} (69.7 {mu}C/cm{sup 2}), lower coercive field E{sub c} (92.4 kV/cm), and good pyroelectric coefficient at room temperature (2.6x10{sup -8} C/cm{sup 2} K). The butterfly-shaped {epsilon}-E characteristic curve gives the evidence of the improved in-plane ferroelectric property in the films.

  8. Thin, high quality GaInP compositionally graded buffer layers grown at high growth rates for metamorphic III-V solar cell applications

    NASA Astrophysics Data System (ADS)

    Garcia, I.; France, R. M.; Geisz, J. F.; Simon, J.

    2014-05-01

    The metamorphic growth of lattice-mismatched materials has allowed optimizing the bandgap combination in multijunction solar cells for the solar spectrum under consideration. Buffer structures are used to accommodate the lattice-mismatch by introducing dislocations and relaxing the material in a controlled way. However, the metamorphic buffers typically involve significant growth time and material usage, which increases the cost of these solar cells. In this work, the thinning of buffer structures with continuously, linearly graded misfit is addressed with the goal of increasing the cost-effectiveness of metamorphic multijunction solar cells. The relaxation dynamics and quality of the buffer layers analyzed were assessed by in-situ stress measurements and ex-situ measurements of residual strain, threading dislocation density and surface roughness. Their ultimate quality has been tested using these buffers as templates for the growth of 1 eV Ga0.73In0.27As solar cells. The deleterious effect of thinning the grade layer of these buffer structures from 2 to 1 μm was investigated. It is shown that prompting the relaxation of the buffer by using a stepwise misfit jump at the beginning of the grade layer improves the quality of the thinned buffer structure. The residual threading dislocation density of the optimized thin buffers, grown at a high growth rate of 7 μm/h, is 3×106 cm-2, and solar cells on these buffers exhibit near-ideal carrier collection efficiency and a Voc of 0.62 V at 1-sun direct terrestrial spectrum.

  9. Influence of emissive layer thickness on electrical characteristics of polyfluorene copolymer based polymer light emitting diodes

    NASA Astrophysics Data System (ADS)

    Das, D.; Gopikrishna, P.; Singh, A.; Dey, A.; Iyer, P. K.

    2016-04-01

    Polymer light emitting diodes (PLEDs) with a device configuration of ITO/PEDOT:PSS/PFONPN01 [Poly [2,7-(9,9’-dioctylfluorene)-co-N-phenyl-1,8-naphthalimide (99:01)]/LiF/Al have been fabricated by varying the emissive layer (EML) thickness (40/65/80/130 nm) and the influence of EML thickness on the electrical characteristics of PLED has been studied. PLED can be modelled as a simple combination of resistors and capacitors. The impedance spectroscopy analysis showed that the devices with different EML thickness had different values of parallel resistance (RP) and the parallel capacitance (CP). The impedance of the devices is found to increase with increasing EML thickness resulting in an increase in the driving voltage. The device with an emissive layer thickness of 80nm, spin coated from a solution of concentration 15 mg/mL is found to give the best device performance with a maximum brightness value of 5226 cd/m2.

  10. Leaping shampoo glides on a 500-nm-thick lubricating air layer

    NASA Astrophysics Data System (ADS)

    Li, Erqiang; Lee, Sanghyun; Marston, Jeremy; Bonito, Andrea; Thoroddsen, Sigurdur

    2013-11-01

    When a stream of shampoo is fed onto a pool in one's hand, a jet can leap sideways or rebound from the liquid surface in an intriguing phenomenon known as the Kaye effect. Earlier studies have debated whether non-Newtonian effects are the underlying cause of this phenomenon, making the jet glide on top of a shear-thinning liquid layer, or whether an entrained air layer is responsible. Herein we show unambiguously that the jet slides on a lubricating air layer [Lee et al., Phys. Rev. E 87, 061001 (2013)]. We identify this layer by looking through the pool liquid and observing its rupture into fine micro-bubbles. The resulting micro-bubble sizes suggest that the thickness of this air layer is around 500 nm. This thickness estimate is also supported by the tangential deceleration of the jet during the rebounding, with the shear stress within the thin air layer sufficient for the observed deceleration. Particle tracking within the jet shows uniform velocity, with no pronounced shear, which would be required for shear-thinning effects. The role of the surfactant may primarily be to stabilize the air film.

  11. The Thickness of Seismogenic Layer Under the Areas Surrounding the Ordos Block, Northern China

    NASA Astrophysics Data System (ADS)

    Qin, C.

    - A seismic approach was used to calculate the thickness distribution of the seismogenic layer under the block Ordos in northern China. This block was chosen because of its stability, the complicated tectonics around its boundaries and the completeness of the data set. Several strong earthquakes occurred in this area in the 20th century, with the largest one (Haiyuan, M= 8.4, 1920) in the southwest of the Ordos. Most of the large faults around the Ordos are strike-slip ones. The breaking point (i.e., the saturation of earthquake magnitudes Mc) of the self-similarity from small to large events based on the Gutenberg-Richter relation is calculated. Under the assumption of the L model which expresses that the offset is proportional to the length of the fault (Scholz, 1982, 1990, 1994), the thickness (Wc) of the seismogenic layer is directly related to Mc. To display smoothly the change of the thickness of the seismogenic layer and to ensure the reliability of the results, a moving cell of 150 events, with a moving step of 0.1 degree, was adopted. To take advantage of the existing data set, the ``mean value method,'' which is based on the latest complete data information to make the existing data set a `complete' one, was used to extrapolate it so that the data covers the whole time period. The results show that the average thickness of the seismogenic layer in the southwest, in the northwest and in the east of the Ordos is around 30, 9 and 17km, respectively. The thickness generally decreases from the southwest to the northeast. This kind of spatial variation is in agreement with the maximum depth distribution of large amounts of microearthquakes, with the correlation coefficient to be about 0.88, and the Moho depth.

  12. Toward Efficient Thick Active PTB7 Photovoltaic Layers Using Diphenyl Ether as a Solvent Additive.

    PubMed

    Zheng, Yifan; Goh, Tenghooi; Fan, Pu; Shi, Wei; Yu, Junsheng; Taylor, André D

    2016-06-22

    The development of thick organic photovoltaics (OPV) could increase absorption in the active layer and ease manufacturing constraints in large-scale solar panel production. However, the efficiencies of most low-bandgap OPVs decrease substantially when the active layers exceed ∼100 nm in thickness (because of low crystallinity and a short exciton diffusion length). Herein, we report the use of solvent additive diphenyl ether (DPE) that facilitates the fabrication of thick (180 nm) active layers and triples the power conversion efficiency (PCE) of conventional thienothiophene-co-benzodithiophene polymer (PTB7)-based OPVs from 1.75 to 6.19%. These results demonstrate a PCE 20% higher than those of conventional (PTB7)-based OPV devices using 1,8-diiodooctane. Morphology studies reveal that DPE promotes the formation of nanofibrillar networks and ordered packing of PTB7 in the active layer that facilitate charge transport over longer distances. We further demonstrate that DPE improves the fill factor and photocurrent collection by enhancing the overall optical absorption, reducing the series resistance, and suppressing bimolecular recombination.

  13. Atomically thick bismuth selenide freestanding single layers achieving enhanced thermoelectric energy harvesting.

    PubMed

    Sun, Yongfu; Cheng, Hao; Gao, Shan; Liu, Qinghua; Sun, Zhihu; Xiao, Chong; Wu, Changzheng; Wei, Shiqiang; Xie, Yi

    2012-12-19

    Thermoelectric materials can realize significant energy savings by generating electricity from untapped waste heat. However, the coupling of the thermoelectric parameters unfortunately limits their efficiency and practical applications. Here, a single-layer-based (SLB) composite fabricated from atomically thick single layers was proposed to optimize the thermoelectric parameters fully. Freestanding five-atom-thick Bi(2)Se(3) single layers were first synthesized via a scalable interaction/exfoliation strategy. As revealed by X-ray absorption fine structure spectroscopy and first-principles calculations, surface distortion gives them excellent structural stability and a much increased density of states, resulting in a 2-fold higher electrical conductivity relative to the bulk material. Also, the surface disorder and numerous interfaces in the Bi(2)Se(3) SLB composite allow for effective phonon scattering and decreased thermal conductivity, while the 2D electron gas and energy filtering effect increase the Seebeck coefficient, resulting in an 8-fold higher figure of merit (ZT) relative to the bulk material. This work develops a facile strategy for synthesizing atomically thick single layers and demonstrates their superior ability to optimize the thermoelectric energy harvesting.

  14. Toward Efficient Thick Active PTB7 Photovoltaic Layers Using Diphenyl Ether as a Solvent Additive.

    PubMed

    Zheng, Yifan; Goh, Tenghooi; Fan, Pu; Shi, Wei; Yu, Junsheng; Taylor, André D

    2016-06-22

    The development of thick organic photovoltaics (OPV) could increase absorption in the active layer and ease manufacturing constraints in large-scale solar panel production. However, the efficiencies of most low-bandgap OPVs decrease substantially when the active layers exceed ∼100 nm in thickness (because of low crystallinity and a short exciton diffusion length). Herein, we report the use of solvent additive diphenyl ether (DPE) that facilitates the fabrication of thick (180 nm) active layers and triples the power conversion efficiency (PCE) of conventional thienothiophene-co-benzodithiophene polymer (PTB7)-based OPVs from 1.75 to 6.19%. These results demonstrate a PCE 20% higher than those of conventional (PTB7)-based OPV devices using 1,8-diiodooctane. Morphology studies reveal that DPE promotes the formation of nanofibrillar networks and ordered packing of PTB7 in the active layer that facilitate charge transport over longer distances. We further demonstrate that DPE improves the fill factor and photocurrent collection by enhancing the overall optical absorption, reducing the series resistance, and suppressing bimolecular recombination. PMID:27253271

  15. Retinal Nerve Fiber Layer Thickness Measurement Comparison Using Spectral Domain and Swept Source Optical Coherence Tomography

    PubMed Central

    Ha, Ahnul; Lee, Seung Hyen; Lee, Eun Ji

    2016-01-01

    Purpose To investigate the retinal nerve fiber layer (RNFL) thickness concordance when measured by spectral domain (SD) and swept source (SS) optical coherence tomography (OCT), and to compare glaucoma-discriminating capability. Methods RNFL thicknesses were measured with the scan circle, centered on the optic nerve head, in 55 healthy, 41 glaucoma suspected, and 87 glaucomatous eyes. The RNFL thickness measured by the SD-OCT (sdRNFL thickness) and SS-OCT (ssRNFL thickness) were compared using the t-test. Bland-Altman analysis was performed to examine their agreement. We compared areas under the receiver operating characteristics curve and examined sdRNFL and ssRNFL thickness for discriminating glaucomatous eyes from healthy eyes, and from glaucoma suspect eyes. Results The average ssRNFL thickness was significantly greater than sdRNFL thickness in healthy (110.0 ± 7.9 vs. 100.1 ± 6.8 µm, p < 0.001), glaucoma suspect (96.8 ± 9.3 vs. 89.6 ± 7.9 µm, p < 0.001), and glaucomatous eyes (74.3 ± 14.2 vs. 69.1 ± 12.4 µm, p = 0.011). Bland-Altman analysis showed that there was a tendency for the difference between ssRNFL and sdRNFL to increase in eyes with thicker RNFL. The area under the curves of the average sdRNFL and ssRNFL thickness for discriminating glaucomatous eyes from healthy eyes (0.984 vs. 0.986, p = 0.491) and glaucoma suspect eyes (0.936 vs. 0.918, p = 0.132) were comparable. Conclusions There was a tendency for ssRNFL thickness to increase, compared with sdRNFL thickness, in eyes with thicker RNFL. The ssRNFL thickness had comparable diagnostic capability compared with sdRNFL thickness for discriminating glaucomatous eyes from healthy eyes and glaucoma suspect eyes. PMID:27051263

  16. Density determination of nano-layers depending to the thickness by non-destructive method

    SciTech Connect

    Gacem, A.; Doghmane, A.; Hadjoub, Z.

    2013-12-16

    Non-destructive tests used to characterize and observe the state of the solids near the surface or at depth, without damaging them or damaging them. Density is frequently used to follow the variations of the physical structure of the samples, as well as in the calculation of quantity of material required to fill a given volume, and it is also used to determine the homogeneity of a sample. However, the measurement of the acoustic properties (density, elastic constants,…) of a thin film whose thickness is smaller than several atomic layers is not easy to perform. For that reason, we expose in this work the effects of the thicknesses of thin films on the evolution of the density, where several samples are analyzed. The samples selected structures are thin films deposited on substrates, these coatings have thicknesses varying from a few atomic layers to ten or so micrometers and can change the properties of the substrate on which they are deposited. To do so, we considered a great number of layers (Cr, Al, SiO{sub 2}, ZnO, Cu, AlN, Si{sub 3}N{sub 4}, SiC) deposited on different substrates (Al{sub 2}O{sub 3}, Cu and Quartz). It is first shown that the density exhibits a dispersive behaviour. Such a behaviour is characterized by an initial increase (or decrease) followed by a saturated region. Further investigations of these dependences led to the determination of a semi-empirical universal relations, ρ=f(h/λ{sub T}), for all the investigated layer/substrate combination. Such expression could be of great importance in the density prediction of even layers thicknesses.

  17. Device performance and lifetime of polymer:fullerene solar cells with UV-ozone-irradiated hole-collecting buffer layers.

    PubMed

    Lee, Seungsoo; Nam, Sungho; Lee, Hyena; Kim, Hwajeong; Kim, Youngkyoo

    2011-11-18

    We report the influence of UV-ozone irradiation of the hole-collecting buffer layers on the performance and lifetime of polymer:fullerene solar cells. UV-ozone irradiation was targeted at the surface of the poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate) (PEDOT:PSS) layers by varying the irradiation time up to 600 s. The change of the surface characteristics in the PEDOT:PSS after UV-ozone irradiation was measured by employing optical absorption spectroscopy, photoelectron yield spectroscopy, and contact angle measurements, while Raman and X-ray photoelectron spectroscopy techniques were introduced for more microscopic analysis. Results showed that the UV-ozone irradiation changed the chemical structure/composition of the surface of the PEDOT:PSS layers leading to the gradual increase of ionization potential with irradiation time in the presence of up-and-down variations in the contact angle (polarity). This surface property change was attributed to the formation of oxidative components, as evidenced by XPS and Auger electron images, which affected the sheet resistance of the PEDOT:PSS layers. Interestingly, device performance was slightly improved by short irradiation (up to 10 s), whereas it was gradually decreased by further irradiation. The short-duration illumination test showed that the lifetime of solar cells with the UV-ozone irradiated PEDOT:PSS layer was improved due to the protective role of the oxidative components formed upon UV-ozone irradiation against the attack of sulfonic acid groups in the PEDOT:PSS layer to the active layer.

  18. Device performance and lifetime of polymer:fullerene solar cells with UV-ozone-irradiated hole-collecting buffer layers.

    PubMed

    Lee, Seungsoo; Nam, Sungho; Lee, Hyena; Kim, Hwajeong; Kim, Youngkyoo

    2011-11-18

    We report the influence of UV-ozone irradiation of the hole-collecting buffer layers on the performance and lifetime of polymer:fullerene solar cells. UV-ozone irradiation was targeted at the surface of the poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate) (PEDOT:PSS) layers by varying the irradiation time up to 600 s. The change of the surface characteristics in the PEDOT:PSS after UV-ozone irradiation was measured by employing optical absorption spectroscopy, photoelectron yield spectroscopy, and contact angle measurements, while Raman and X-ray photoelectron spectroscopy techniques were introduced for more microscopic analysis. Results showed that the UV-ozone irradiation changed the chemical structure/composition of the surface of the PEDOT:PSS layers leading to the gradual increase of ionization potential with irradiation time in the presence of up-and-down variations in the contact angle (polarity). This surface property change was attributed to the formation of oxidative components, as evidenced by XPS and Auger electron images, which affected the sheet resistance of the PEDOT:PSS layers. Interestingly, device performance was slightly improved by short irradiation (up to 10 s), whereas it was gradually decreased by further irradiation. The short-duration illumination test showed that the lifetime of solar cells with the UV-ozone irradiated PEDOT:PSS layer was improved due to the protective role of the oxidative components formed upon UV-ozone irradiation against the attack of sulfonic acid groups in the PEDOT:PSS layer to the active layer. PMID:22038984

  19. Lidar Descriptions of Mixing-Layer Thickness Characteristics in a Complex Terrain/Coastal Environment.

    NASA Astrophysics Data System (ADS)

    McElroy, James L.; Smith, Ted B.

    1991-05-01

    Airborne lidar and supplementary measurements made during a major study of air chemistry in southern California (SCCCAMP 1985) provided a rare opportunity to examine atmospheric boundary-layer structure in a coastal area with complex terrain. This structure results from a combination of daytime heating or convection in the boundary layer (CBL), the intrusion of a marine layer into the inland areas, the thermal internal boundary layer (TIBL) formed within the marine onshore flow, inland growth of the TIBL, interactions of the CBL and the TIBL, and airflow interactions with terrain features.Measurements showed offshore mixing-layer thicknesses during SCCCAMP to be quite uniform spatially and day to day at 100-200 m. Movement of this layer onshore occurred readily with terrain that sloped gradually upward (e.g., to 300 m MSL at 50 km inland), but was effectively blocked by a 400-500 m high coastal ridge. In the higher terrain beyond the coastal ridge, aerosol layers aloft were often created as a result of deep convection and of a combination of onshore flow and heated, upslope airflow activity. Such aerosol layers can extend far offshore when embedded in reverse circulations aloft.The forward boundary of the marine layer was quite sharp, resembling a miniature cold front. Within the marine layer the onshore flow initiates a TIBL at the coastline, which increases in depth with distance inland due to roughness and convective influences. A coherent marine layer with imbedded TIBL was maintained for inland distances of 20-50 km, depending on terrain. Intense heating occurred inland prior to the arrival and undercutting by the marine front. The resulting, effective mixing layer increased in thickness from a few hundred meters to nearly two kilometers in a very short distance.Comparisons of a representative, physically based TIBL and convective mixing-layer models with observed data indicate that they generally do a credible job of estimating the depth of the marine layer

  20. Influence of electron transport layer thickness on optical properties of organic light-emitting diodes

    SciTech Connect

    Liu, Guohong; Liu, Yong; Li, Baojun; Zhou, Xiang

    2015-06-07

    We investigate experimentally and theoretically the influence of electron transport layer (ETL) thickness on properties of typical N,N′-diphenyl-N,N′-bis(1-naphthyl)-[1,1′-biphthyl]-4,4′-diamine (NPB)/tris-(8-hydroxyquinoline) aluminum (Alq{sub 3}) heterojunction based organic light-emitting diodes (OLEDs), where the thickness of ETL is varied to adjust the distance between the emitting zone and the metal electrode. The devices showed a maximum current efficiency of 3.8 cd/A when the ETL thickness is around 50 nm corresponding to an emitter-cathode distance of 80 nm, and a second maximum current efficiency of 2.6 cd/A when the ETL thickness is around 210 nm corresponding to an emitter-cathode distance of 240 nm. We adopt a rigorous electromagnetic approach that takes parameters, such as dipole orientation, polarization, light emitting angle, exciton recombination zone, and diffusion length into account to model the optical properties of devices as a function of varying ETL thickness. Our simulation results are accurately consistent with the experimental results with a widely varying thickness of ETL, indicating that the theoretical model may be helpful to design high efficiency OLEDs.

  1. Retinal Nerve Fibre Layer and Macular Thicknesses in Adults with Hyperopic Anisometropic Amblyopia

    PubMed Central

    Yakar, Konuralp; Alan, Aydın; Alp, Mehmet Hanifi; Ceylan, Tolga

    2015-01-01

    Objectives. This study compared the macular and retinal nerve fibre layer (RNFL) thicknesses and optic nerves of eyes with reduced vision due to anisometropia with the contralateral healthy eyes in adults using optical coherence tomography (OCT). Methods. This cross-sectional study was conducted in Atatürk State Hospital, Sinop, Turkey. Macular and RNFL thicknesses, optic nerve disc area, cup area, and horizontal and vertical cup-to-disc ratios obtained using a NIDEK RS-3000 SLO spectral domain OCT device were compared between the amblyopic and fellow eyes in 30 adults with anisometropic amblyopia 18–55 years old who were seen in our clinic with unilateral poor vision. Results. The mean macular thickness was 266.90 ± 23.22 µm in the amblyopic eyes and 263.90 ± 22.84 µm in the fellow eyes, and the mean RNFL thickness was 111.90 ± 12.9 and 109.70 ± 9.42 µm, respectively. The two thicknesses did not differ significantly between the amblyopic and fellow eyes. There were also no significant differences between the eyes in disc area, cup area, and horizontal-vertical cup/disc ratios. Conclusion. There does not seem to be a difference in macular thickness, peripapillary RNFL, or optic disc structures between the amblyopic and fellow eyes in adults. PMID:26064676

  2. The effects of ultra-thin cerium fluoride film as the anode buffer layer on the electrical characteristics of organic light emitting diodes

    NASA Astrophysics Data System (ADS)

    Lu, Hsin-Wei; Tsai, Cheng-Che; Hong, Cheng-Shong; Kao, Po-Ching; Juang, Yung-Der; Chu, Sheng-Yuan

    2016-11-01

    In this study, the efficiency of organic light-emitting diodes (OLEDs) was enhanced by depositing a CeF3film as an ultra-thin buffer layer between the indium tin oxide (ITO) electrode and α-naphthylphenylbiphenyldiamine (NPB) hole transport layer, with the structure configuration ITO/CeF3 (0.5, 1, and 1.5 nm)/α-naphthylphenylbiphenyl diamine (NPB) (40 nm)/tris(8-hydroxyquinoline) aluminum (Alq3) (60 nm)/lithium fluoride (LiF) (1 nm)/Al (150 nm). The enhancement mechanism was systematically investigated via several approaches. The X-ray photoelectron spectroscopy and ultraviolet photoelectron spectroscopy results revealed the formation of the UV-ozone treated CeF3 film. The work function increased from 4.8 eV (standard ITO electrode) to 5.22 eV (0.5-nm-thick UV-ozone treated CeF3 film deposited on the ITO electrode). The surface roughness of the UV-ozone treated CeF3 film was smoother than that of the standard ITO electrode. Further, the UV-ozone treated CeF3 film increased both the surface energy and polarity, as determined from contact angle measurements. In addition, admittance spectroscopy measurements showed an increased capacitance and conductance of the OLEDs. Accordingly, the turn-on voltage decreased from 4.2 V to 3.6 V at 1 mA/cm2, the luminance increased from 7588 cd/m2 to 24760 cd/m2, and the current efficiency increased from 3.2 cd/A to 3.8 cd/A when the 0.5-nm-thick UV-ozone treated CeF3 film was inserted into the OLEDs.

  3. A nitrilo-tri-acetic-acid/acetic acid route for the deposition of epitaxial cerium oxide films as high temperature superconductor buffer layers

    SciTech Connect

    Thuy, T.T.; Lommens, P.; Narayanan, V.; Van de Velde, N.; De Buysser, K.; Herman, G.G.; Cloet, V.; Van Driessche, I.

    2010-09-15

    A water based cerium oxide precursor solution using nitrilo-tri-acetic-acid (NTA) and acetic acid as complexing agents is described in detail. This precursor solution is used for the deposition of epitaxial CeO{sub 2} layers on Ni-5at%W substrates by dip-coating. The influence of the complexation behavior on the formation of transparent, homogeneous solutions and gels has been studied. It is found that ethylenediamine plays an important role in the gelification. The growth conditions for cerium oxide films were Ar-5% gas processing atmosphere, a solution concentration level of 0.25 M, a dwell time of 60 min at 900 {sup o}C and 5-30 min at 1050 {sup o}C. X-ray diffraction (XRD), scanning electron microscope (SEM), atomic force microscopy (AFM), pole figures and spectroscopic ellipsometry were used to characterize the CeO{sub 2} films with different thicknesses. Attenuated total reflection-Fourier transform infrared (ATR-FTIR) was used to determine the carbon residue level in the surface of the cerium oxide film, which was found to be lower than 0.01%. Textured films with a thickness of 50 nm were obtained. - Graphical abstract: Study of the complexation and hydrolysis behavior of Ce{sup 4+} ions in the presence of nitrilo-tri-acetic acid and the subsequent development of an aqueous chemical solution deposition route suited for the processing of textured CeO{sub 2} buffer layers on Ni-W tapes.

  4. Ca/Alq3 hybrid cathode buffer layer for the optimization of organic solar cells based on a planar heterojunction

    NASA Astrophysics Data System (ADS)

    El Jouad, Z.; Barkat, L.; Stephant, N.; Cattin, L.; Hamzaoui, N.; Khelil, A.; Ghamnia, M.; Addou, M.; Morsli, M.; Béchu, S.; Cabanetos, C.; Richard-Plouet, M.; Blanchard, P.; Bernède, J. C.

    2016-11-01

    Use of efficient anode cathode buffer layer (CBL) is crucial to improve the efficiency of organic photovoltaic cells. Here we show that using a double CBL, Ca/Alq3, allows improving significantly cell performances. The insertion of Ca layer facilitates electron harvesting and blocks hole collection, leading to improved charge selectivity and reduced leakage current, whereas Alq3 blocks excitons. After optimisation of this Ca/Alq3 CBL using CuPc as electron donor, it is shown that it is also efficient when SubPc is substituted to CuPc in the cells. In that case we show that the morphology of the SubPc layer, and therefore the efficiency of the cells, strongly depends on the deposition rate of the SubPc film. It is necessary to deposit slowly (0.02 nm/s) the SubPc films because at higher deposition rate (0.06 nm/s) the films are porous, which induces leakage currents and deterioration of the cell performances. The SubPc layers whose formations are kinetically driven at low deposition rates are more uniform, whereas those deposited faster exhibit high densities of pinholes.

  5. Improved performance of P-type DSCs with a compact blocking layer coated by different thicknesses

    NASA Astrophysics Data System (ADS)

    Ho, Phuong; Bao, Le Quoc; Cheruku, Rajesh; Kim, Jae Hong

    2016-09-01

    The introduction of different thicknesses of a compact NiO blocking layer coating with different spin speeds on FTO and followed by a coating of photoactive NiO electrode for p-type dye-sensitized solar cells ( p-DSCs). This study examined the fabrication of a compact NiO blocking layer by decomposing an ethanolic precursor solution of nickel acetate tetrahydrate. The DCBZ dye used as the photosensitizer for the NiO electrode in the p-DSCs device and their performances have been analyzed. The enhancement of photovoltaic performance and resulted from an increase in the power conversion efficiency ( η). The electrochemical impedance spectroscopy (EIS) measurement demonstrated that charge recombination was suppressed when a compact NiO blocking layer was applied. The results showed that the best p-DSC was achieved by employing 3000 rpm spin-coated process for different times of blocking layer.

  6. Aerodynamically-driven condensate layer thickness distributions on isothermal cylindrical surfaces

    NASA Technical Reports Server (NTRS)

    Rosner, D. E.; Gunes, D.; Nazih-Anous, N.

    1983-01-01

    A simple yet rather general mathematical model is presented for predicting the distribution of condensate layer thickness when aerodynamic shear is the dominant mechanism of liquid flow along the surface. The Newtonian condensate film is treated using well-known thin-layer (lubrication theory) approximations, and condensate supply is taken to be the result of either convective diffusion or inertial impaction. Illustrative calculations for a circular cylinder in a crossflow at Re = 100,000 reveal the consequences of alternate condensate arrival mechanisms and the existence of thicker reverse-flow films behind the position of gas boundary-layer separation. The present formulation is readily generalized to include transient liquid layer flows on noncircular objects of variable surface temperature, as encountered in turbine-blade materials testing or operation.

  7. Improved performance of P-type DSCs with a compact blocking layer coated by different thicknesses

    NASA Astrophysics Data System (ADS)

    Ho, Phuong; Bao, Le Quoc; Cheruku, Rajesh; Kim, Jae Hong

    2016-07-01

    The introduction of different thicknesses of a compact NiO blocking layer coating with different spin speeds on FTO and followed by a coating of photoactive NiO electrode for p-type dye-sensitized solar cells (p-DSCs). This study examined the fabrication of a compact NiO blocking layer by decomposing an ethanolic precursor solution of nickel acetate tetrahydrate. The DCBZ dye used as the photosensitizer for the NiO electrode in the p-DSCs device and their performances have been analyzed. The enhancement of photovoltaic performance and resulted from an increase in the power conversion efficiency (η). The electrochemical impedance spectroscopy (EIS) measurement demonstrated that charge recombination was suppressed when a compact NiO blocking layer was applied. The results showed that the best p-DSC was achieved by employing 3000 rpm spin-coated process for different times of blocking layer.

  8. Self-assembled, aligned ZnO nanorod buffer layers for high-current-density, inverted organic photovoltaics.

    PubMed

    Rao, Arun D; Karalatti, Suresh; Thomas, Tiju; Ramamurthy, Praveen C

    2014-10-01

    Two different soft-chemical, self-assembly-based solution approaches are employed to grow zinc oxide (ZnO) nanorods with controlled texture. The methods used involve seeding and growth on a substrate. Nanorods with various aspect ratios (1-5) and diameters (15-65 nm) are grown. Obtaining highly oriented rods is determined by the way the substrate is mounted within the chemical bath. Furthermore, a preheat and centrifugation step is essential for the optimization of the growth solution. In the best samples, we obtain ZnO nanorods that are almost entirely oriented in the (002) direction; this is desirable since electron mobility of ZnO is highest along this crystallographic axis. When used as the buffer layer of inverted organic photovoltaics (I-OPVs), these one-dimensional (1D) nanostructures offer: (a) direct paths for charge transport and (b) high interfacial area for electron collection. The morphological, structural, and optical properties of ZnO nanorods are studied using scanning electron microscopy, X-ray diffraction, and ultraviolet-visible light (UV-vis) absorption spectroscopy. Furthermore, the surface chemical features of ZnO films are studied using X-ray photoelectron spectroscopy and contact angle measurements. Using as-grown ZnO, inverted OPVs are fabricated and characterized. For improving device performance, the ZnO nanorods are subjected to UV-ozone irradiation. UV-ozone treated ZnO nanorods show: (i) improvement in optical transmission, (ii) increased wetting of active organic components, and (iii) increased concentration of Zn-O surface bonds. These observations correlate well with improved device performance. The devices fabricated using these optimized buffer layers have an efficiency of ∼3.2% and a fill factor of 0.50; this is comparable to the best I-OPVs reported that use a P3HT-PCBM active layer.

  9. Improved high temperature integration of Al{sub 2}O{sub 3} on MoS{sub 2} by using a metal oxide buffer layer

    SciTech Connect

    Son, Seokki; Choi, Moonseok; Kim, Dohyung; Choi, Changhwan; Yu, Sunmoon

    2015-01-12

    We deposited a metal oxide buffer layer before atomic layer deposition (ALD) of Al{sub 2}O{sub 3} onto exfoliated molybdenum disulfide (MoS{sub 2}) in order to accomplish enhanced integration. We demonstrate that even at a high temperature, functionalization of MoS{sub 2} by means of a metal oxide buffer layer can effectively provide nucleation sites for ALD precursors, enabling much better surface coverage of Al{sub 2}O{sub 3}. It is shown that using a metal oxide buffer layer not only allows high temperature ALD process, resulting in highly improved quality of Al{sub 2}O{sub 3}/MoS{sub 2} interface, but also leaves MoS{sub 2} intact.

  10. Thickness of Saturn's ring current determined from north-south Cassini passes through the current layer

    NASA Astrophysics Data System (ADS)

    Kellett, S.; Bunce, E. J.; Coates, A. J.; Cowley, S. W. H.

    2009-04-01

    We investigate magnetic field and plasma electron data from six Cassini orbits during which, unique within the mission to date, the spacecraft passed almost directly north-south through Saturn's equatorial plane within the ring current region of the middle magnetosphere. Three passes took place in the postnoon sector and three took place in the postmidnight sector, each at radial distances of ˜9, ˜12, and ˜15 R S . (R S is Saturn's radius, equal to 60,268 km). These data allow for the first time an essentially direct determination of the north-south field and plasma structure in this region at approximately constant radius and local time. The dayside data indicate the presence of an equatorial current disk with a near constant half-thickness of ˜1.5 R S . Comparison of the magnetic data with simultaneous electron spectrograms shows that the current layer is located within a significantly broader layer of hot plasma. More variable conditions are found on the nightside. In the inner region a thin equatorial current layer of half-thickness ˜0.5 R S is found embedded at the center of a much broader layer of current and plasma. In the central and outer passes the current sheet corresponds to essentially the whole of the hot equatorial electron layer, with a half-thickness of ˜2.5 R S for the central pass, falling strongly to ˜0.4 R S for the outer pass. The data also provide confirmatory evidence of northward displacements of the center of the current layer from Saturn's equatorial plane in the outer regions, on both the dayside and the nightside of the planet.

  11. Resputtering effect during MgO buffer layer deposition by magnetron sputtering for superconducting coated conductors

    SciTech Connect

    Xiao, Shaozhu; Shi, Kai; Deng, Shutong; Han, Zhenghe; Feng, Feng Lu, Hongyuan; Qu, Timing; Zhu, Yuping; Huang, Rongxia

    2015-07-15

    In this study, MgO thin films were deposited by radio-frequency magnetron sputtering. The film thickness in the deposition area directly facing the target center obviously decreased compared with that in other areas. This reduction in thickness could be attributed to the resputtering effect resulting from bombardment by energetic particles mainly comprising oxygen atoms and negative oxygen ions. The influences of deposition position and sputtering pressure on the deposition rate were investigated. Resputtering altered the orientation of the MgO film from (111) to (001) when the film was deposited on a single crystal yttria-stabilized zirconia substrate. The density distribution of energetic particles was calculated on the basis of the measured thicknesses of the MgO films deposited at different positions. The divergence angle of the energetic particle flux was estimated to be approximately 15°. The energetic particle flux might be similar to the assisting ion flux in the ion beam assisted deposition process and could affect the orientation of the MgO film growth.

  12. Mointoring Thickness Deviations in Planar Multi-Layered Elastic Structures Using Impedance Signatures

    SciTech Connect

    Fisher, K A

    2007-01-26

    In this letter, a low frequency ultrasonic resonance technique that operates in the (20 - 80 kHz) regime is presented that demonstrates detection of thickness changes on the order of +/- 10{micro}m. This measurement capability is a result of the direct correlation between the electrical impedance of an electro-acoustic transducer and the mechanical loading it experiences when placed in contact with a layered elastic structure. The relative frequency shifts of the resonances peaks can be estimated through a simple one-dimensional transmission model. Separate experimental measurements confirm this technique to be sensitive to subtle changes in the underlying layered elastic structure.

  13. Measurement of thermal noise in multilayer coatings with optimized layer thickness

    SciTech Connect

    Villar, Akira E.; Black, Eric D.; DeSalvo, Riccardo; Libbrecht, Kenneth G.; Michel, Christophe; Morgado, Nazario; Pinard, Laurent; Pinto, Innocenzo M.; Pierro, Vincenzo; Galdi, Vincenzo; Principe, Maria; Taurasi, Ilaria

    2010-06-15

    A standard quarter-wavelength multilayer optical coating will produce the highest reflectivity for a given number of coating layers, but in general it will not yield the lowest thermal noise for a prescribed reflectivity. Coatings with the layer thicknesses optimized to minimize thermal noise could be useful in future generation interferometric gravitational wave detectors where coating thermal noise is expected to limit the sensitivity of the instrument. We present the results of direct measurements of the thermal noise of a standard quarter-wavelength coating and a low noise optimized coating. The measurements indicate a reduction in thermal noise in line with modeling predictions.

  14. Correlation of Retinal Nerve Fiber Layer Thickness and Visual Fields in Glaucoma: A broken stick model

    PubMed Central

    Alasil, Tarek; Wang, Kaidi; Yu, Fei; Field, Matthew G.; Lee, Hang; Baniasadi, Neda; de Boer, Johannes F.; Coleman, Anne L.; Chen, Teresa C.

    2015-01-01

    Purpose To determine the retinal nerve fiber layer (RNFL) thickness at which visual field (VF) damage becomes detectable and associated with structural loss. Design Retrospective cross-sectional study. Methods Eighty seven healthy and 108 glaucoma subjects (one eye per subject) were recruited from an academic institution. All patients had VF examinations (Swedish Interactive Threshold Algorithm 24-2 test of the Humphrey visual field analyzer 750i; Carl Zeiss Meditec, Dublin, CA) and spectral domain optical coherence tomography RNFL scans (Spectralis, Heidelberg Engineering, Heidelberg, Germany). Comparison of RNFL thicknesses values with VF threshold values showed a plateau of VF threshold values at high RNFL thickness values and then a sharp decrease at lower RNFL thickness values. A broken stick statistical analysis was utilized to estimate the tipping point at which RNFL thickness values are associated with VF defects. The slope for the association between structure and function was computed for data above and below the tipping point. Results The mean RNFL thickness value that was associated with initial VF loss was 89 μm. The superior RNFL thickness value that was associated with initial corresponding inferior VF loss was 100 μm. The inferior RNFL thickness value that was associated with initial corresponding superior VF loss was 73 μm. The differences between all the slopes above and below the aforementioned tipping points were statistically significant (p<0.001). Conclusions In open angle glaucoma, substantial RNFL thinning or structural loss appears to be necessary before functional visual field defects become detectable. PMID:24487047

  15. Thickness effects on the Coulomb drag rate in double quantum layer systems

    NASA Astrophysics Data System (ADS)

    Vazifehshenas, T.; Eskourchi, A.

    2007-02-01

    In this paper, we have investigated the effect of quantum layer thickness on Coulomb drag phenomenon in a double quantum well (DQW) system, in which the electrons momentum can transfer from one layer to another. We have applied the full random phase approximation (RPA) in dynamical dielectric matrix of this coupled two-dimensional electron gas (2DEG) system in order to obtain an improved result for temperature-dependent rate of momentum transfer. We have calculated the drag rate transresistivity for various well thicknesses at low and intermediate temperatures in Fermi-scale and for different electron gas densities. It has been obtained that the Coulomb drag rate increases with increasing the well width when the separation between the wells remains unchanged.

  16. An Integrated Observational and Model Synthesis Approach to Examine Dominant Environmental Controls on Active Layer Thickness

    NASA Astrophysics Data System (ADS)

    Atchley, A. L.; Coon, E.; Painter, S. L.; Harp, D. R.; Wilson, C. J.

    2015-12-01

    The active layer thickness (ALT) - the annual maximum depth of soil with above 0°C temperatures - in part determines the volume of carbon-rich stores available for decomposition and therefore potential greenhouse gas release into the atmosphere from Arctic tundra. However, understanding and predicting ALT in polygonal tundra landscapes is difficult due to the complex nature of hydrothermal atmospheric-surface-subsurface interactions in freezing/thawing soil. Simply deconvolving effects of single environmental controls on ALT is not possible with measurements alone as processes act in concert to drive thaw depth formation. Process-rich models of thermal hydrological dynamics, conversely, are a valuable tool for understanding the dominant controls and uncertainties in predicting permafrost conditions. By integrating observational data with known physical relationships to form process-rich models, synthetic experiments can then be used to explore a breadth of environmental conditions encountered and the effect of each environmental attribute may be assessed. Here a process rich thermal hydrology model, The Advanced Terrestrial Simulator, has been created and calibrated using observed data from Barrow, AK. An ensemble of 1D thermal hydrologic models were simulated that span a range of three environmental factors 1) thickness of organic rich soil, 2) snow depth, and 3) soil moisture content, to investigate the role of each factor on ALT. Results show that organic layer thickness acts as a strong insulator and is the dominant control of ALT, but the strength of the effect of organic layer thickness is also dependent on the saturation state. Using the ensemble results, the effect of peat thickness on ALT was then examined on a 2D domain. This work was supported by LANL Laboratory Directed Research and Development Project LDRD201200068DR and by the The Next-Generation Ecosystem Experiments (NGEE Arctic) project. NGEE-Arctic is supported by the Office of Biological and

  17. Diffusion of ionizable solutes across planar lipid bilayer membranes: boundary-layer pH gradients and the effect of buffers.

    PubMed

    Xiang, T X; Anderson, B D

    1993-11-01

    The diffusion of weak acids or bases across planar lipid bilayer membranes results in aqueous boundary layer pH gradients. If not properly taken into account, such pH gradients will lead to errors in estimated membrane permeability coefficients, Pm. The role of the permeant concentration, the buffer capacity, and the physicochemical properties of both permeant and buffer on the magnitude and impact of such pH gradients have been explored. A theoretical model has been developed to describe the diffusion of both permeant and buffer species. Significant pH gradients develop depending on solution pH and the pKa's, concentrations, and Pm values of both permeant and buffer. The relative error in experimentally determined Pm values was calculated as the ratio, r, between apparent Pm values (obtained from flux measurements using an equation which neglected boundary layer pH gradients) and its true value. Simulated r values ranged from 1 (0% error) to < 0.01 (> 100% error) for weak acids, decreasing with decreasing buffer capacity and increasing solute flux. The buffer capacity required for an r > 0.95 was calculated versus pH for permeants varying in pKa and Pm. Membrane-permeable buffers significantly reduce boundary layer pH gradients through a feedback effect due to buffer cotransport. Apparent Pm values of p-hydroxymethyl benzoic acid across lecithin bilayer membranes at 25 degrees C were obtained as a function of permeant concentration in various buffers [glycolic, 2-(N-morpholino)ethane-sulfonic, and formic acids]. Predictions agreed closely with experimental fluxes. PMID:8290481

  18. Effect of buffer structures on AlGaN/GaN high electron mobility transistor reliability

    SciTech Connect

    Liu, L.; Xi, Y. Y.; Ren, F.; Pearton, S. J.; Laboutin, O.; Cao, Yu; Johnson, Wayne J.; Kravchenko, Ivan I

    2012-01-01

    AlGaN/GaN high electron mobility transistors (HEMTs) with three different types of buffer layers, including a GaN/AlGaN composite layer, or 1 or 2 lm GaN thick layers, were fabricated and their reliability compared. The HEMTs with the thick GaN buffer layer showed the lowest critical voltage (Vcri) during off-state drain step-stress, but this was increased by around 50% and 100% for devices with the composite AlGaN/GaN buffer layers or thinner GaN buffers, respectively. The Voff - state for HEMTs with thin GaN and composite buffers were 100 V, however, this degraded to 50 60V for devices with thick GaN buffers due to the difference in peak electric field near the gate edge. A similar trend was observed in the isolation breakdown voltage measurements, with the highest Viso achieved based on thin GaN or composite buffer designs (600 700 V), while a much smaller Viso of 200V was measured on HEMTs with the thick GaN buffer layers. These results demonstrate the strong influence of buffer structure and defect density on AlGaN/GaN HEMT performance and reliability.

  19. Theoretical Determination of The Optimum Thickness of Perylene Layer in Bilayer Phthalocyanine/Perylene Photovoltaic Device

    NASA Astrophysics Data System (ADS)

    Pratiwi, Herlina; Siahaan, Timothy; Satriawan, Mirza; Nurwantoro, Pekik; Triyana, Kuwat

    2009-09-01

    We do theoretical study on thickness of the active layers in a heterojunction bilayer thin film photovoltaic device based on copper phthalocyanine (CuPc)/perylene that gives the highest Incident Photon to Current Efficiency (IPCE). The device we study consists Glass (1 mm)/ITO (Indium Tin Oxide, 120 nm)/CuPc (50 nm)/PTCDA (3, 4, 9, 10-perylenetetracarboxylic dianhydride, x nm)/Ag (40 nm), where x is the thickness of the PTCDA layer that we calculate here. The calculation is based on assumption that the photocurrent generation process is the result of the creation of photogenerated excitons, which difuse before dissociated at the CuPc/PTCDA interface following the diffusion equation, by internal optical electric field that comes from light exposure. We also assume that almost all photocurrent is created in the CuPc/PTCDA interface. Because the order of the thickness of the active layers is the same or smaller than of the wavelength of visible light, we take into account the effect of reflection and interference in the calculation of internal optical electric field distribution inside the device by making use complex indices of refraction of the active materials in our calculation. The modulus of it is proportional with the number generated excitons. The general solution of the exciton diffusion equation was used for calculating the photocurrent and the IPCE. Here, we find the optimum thickness of PTCDA layer that gives greatest IPCE at the wavelength of 344 nm and 467 nm, which are the wavelengths at which the absorption coefficients of CuPc and PTCDA, respectively, reach the maximum values.

  20. Oscillating layer thickness and vortices generated in oscillation of finite plate

    NASA Astrophysics Data System (ADS)

    Sin, V. K.; Wong, I. K.

    2016-06-01

    Moving mesh strategy is used in the model of flow induced by oscillating finite plate through software - COMSOL Multiphysics. Flow is assumed to be laminar and arbitrary Lagrangian-Eulerian method is used for moving mesh in the simulation. Oscillating layer thickness is found which is different from the analytical solution by 2 to 3 times depends on the oscillating frequency. Vortices are also observed near the oscillating finite plate because of the edge effect of the finite plate.

  1. Macular Microcysts in Mitochondrial Optic Neuropathies: Prevalence and Retinal Layer Thickness Measurements

    PubMed Central

    Carbonelli, Michele; La Morgia, Chiara; Savini, Giacomo; Cascavilla, Maria Lucia; Borrelli, Enrico; Chicani, Filipe; do V. F. Ramos, Carolina; Salomao, Solange R.; Parisi, Vincenzo; Sebag, Jerry; Bandello, Francesco; Sadun, Alfredo A.; Carelli, Valerio; Barboni, Piero

    2015-01-01

    Purpose To investigate the thickness of the retinal layers and to assess the prevalence of macular microcysts (MM) in the inner nuclear layer (INL) of patients with mitochondrial optic neuropathies (MON). Methods All patients with molecularly confirmed MON, i.e. Leber’s Hereditary Optic Neuropathy (LHON) and Dominant Optic Atrophy (DOA), referred between 2010 and 2012 were enrolled. Eight patients with MM were compared with two control groups: MON patients without MM matched by age, peripapillary retinal nerve fiber layer (RNFL) thickness, and visual acuity, as well as age-matched controls. Retinal segmentation was performed using specific Optical coherence tomography (OCT) software (Carl Zeiss Meditec). Macular segmentation thickness values of the three groups were compared by one-way analysis of variance with Bonferroni post hoc corrections. Results MM were identified in 5/90 (5.6%) patients with LHON and 3/58 (5.2%) with DOA. The INL was thicker in patients with MON compared to controls regardless of the presence of MM [133.1±7μm vs 122.3±9μm in MM patients (p<0.01) and 128.5±8μm vs. 122.3±9μm in no-MM patients (p<0.05)], however the outer nuclear layer (ONL) was thicker in patients with MM (101.4±1mμ) compared to patients without MM [77.5±8mμ (p<0.001)] and controls [78.4±7mμ (p<0.001)]. ONL thickness did not significantly differ between patients without MM and controls. Conclusion The prevalence of MM in MON is low (5-6%), but associated with ONL thickening. We speculate that in MON patients with MM, vitreo-retinal traction contributes to the thickening of ONL as well as to the production of cystic spaces. PMID:26047507

  2. Spectroscopic detection of atom-surface interactions in an atomic-vapor layer with nanoscale thickness

    NASA Astrophysics Data System (ADS)

    Whittaker, K. A.; Keaveney, J.; Hughes, I. G.; Sargsyan, A.; Sarkisyan, D.; Adams, C. S.

    2015-11-01

    We measure the resonance line shape of atomic-vapor layers with nanoscale thickness confined between two sapphire windows. The measurement is performed by scanning a probe laser through resonance and collecting the scattered light. The line shape is dominated by the effects of Dicke narrowing, self-broadening, and atom-surface interactions. By fitting the measured line shape to a simple model we discuss the possibility to extract information about the atom-surface interaction.

  3. Improved UV photoresponse properties of high-quality ZnO thin films through the use of a ZnO buffer layer on flexible polyimide substrates

    NASA Astrophysics Data System (ADS)

    Kim, Mincheol; Leem, Jae-Young; Son, Jeong-Sik

    2016-03-01

    An oxidized ZnO buffer layer was prepared by using thermal oxidation of a Zn buffer layer on a polyimide (PI) substrate; then, ZnO thin films with (sample 1) and without (sample 2) an oxidized ZnO buffer layer were grown by using the sol-gel spin-coating method. The intensities of the ZnO (002) diffraction peaks observed in sample 1 were stronger than those observed in sample 2, implying that the crystal quality was enhanced by the oxidized ZnO buffer layer. Moreover, the residual stress of sample 1 was reduced compared to that of sample 2 due to the decreased number of defects. Sample 2 exhibited defect-related deep-level orange-yellow emissions, which almost disappeared with the introduction of the ZnO buffer layer (sample 1). The values of the responsivity were 0.733 (sample 1) and 0.066 (sample 2) mA/W; therefore, the proposed method could provide a pathway to the easy fabrication of fast-response UV sensors.

  4. Optimization of the ZnS Buffer Layer by Chemical Bath Deposition for Cu(In,Ga)Se2 Solar Cells.

    PubMed

    Jeon, Dong-Hwan; Hwang, Dae-Kue; Kim, Dae-Hwan; Kang, Jin-Kyu; Lee, Chang-Seop

    2016-05-01

    We evaluated a ZnS buffer layer prepared using a chemical bath deposition (CBD) process for application in cadmium-free Cu(In,Ga)Se2 (CIGS) solar cells. The ZnS buffer layer showed good transmittance (above 90%) in the spectral range from 300 to 800 nm and was non-toxic compared with the CdS buffer layers normally used in CIGS solar cells. The CBD process was affected by several deposition conditions. The deposition rate was dependent on the ammonia concentration (complexing agent). When the ammonia concentration was either too high or low, a decrease in the deposition rate was observed. In addition, post heat treatments at high temperatures had detrimental influences on the ZnS buffer layers because portions of the ZnS thin films were transformed into ZnO. With optimized deposition conditions, a CIGS solar cell with a ZnS buffer layer showed an efficiency of 14.18% with a 0.23 cm2 active area under 100 mW/cm2 illumination.

  5. Optimization of the ZnS Buffer Layer by Chemical Bath Deposition for Cu(In,Ga)Se2 Solar Cells.

    PubMed

    Jeon, Dong-Hwan; Hwang, Dae-Kue; Kim, Dae-Hwan; Kang, Jin-Kyu; Lee, Chang-Seop

    2016-05-01

    We evaluated a ZnS buffer layer prepared using a chemical bath deposition (CBD) process for application in cadmium-free Cu(In,Ga)Se2 (CIGS) solar cells. The ZnS buffer layer showed good transmittance (above 90%) in the spectral range from 300 to 800 nm and was non-toxic compared with the CdS buffer layers normally used in CIGS solar cells. The CBD process was affected by several deposition conditions. The deposition rate was dependent on the ammonia concentration (complexing agent). When the ammonia concentration was either too high or low, a decrease in the deposition rate was observed. In addition, post heat treatments at high temperatures had detrimental influences on the ZnS buffer layers because portions of the ZnS thin films were transformed into ZnO. With optimized deposition conditions, a CIGS solar cell with a ZnS buffer layer showed an efficiency of 14.18% with a 0.23 cm2 active area under 100 mW/cm2 illumination. PMID:27483938

  6. Macular Ganglion Cell Inner Plexiform Layer Thickness in Glaucomatous Eyes with Localized Retinal Nerve Fiber Layer Defects

    PubMed Central

    Zhang, Chunwei; Tatham, Andrew J.; Abe, Ricardo Y.; Hammel, Na’ama; Belghith, Akram; Weinreb, Robert N.; Medeiros, Felipe A.; Liebmann, Jeffrey M.; Girkin, Christopher A.; Zangwill, Linda M.

    2016-01-01

    Purpose To investigate macular ganglion cell–inner plexiform layer (mGCIPL) thickness in glaucomatous eyes with visible localized retinal nerve fiber layer (RNFL) defects on stereophotographs. Methods 112 healthy and 149 glaucomatous eyes from the Diagnostic Innovations in Glaucoma Study (DIGS) and the African Descent and Glaucoma Evaluation Study (ADAGES) subjects had standard automated perimetry (SAP), optical coherence tomography (OCT) imaging of the macula and optic nerve head, and stereoscopic optic disc photography. Masked observers identified localized RNFL defects by grading of stereophotographs. Result 47 eyes had visible localized RNFL defects on stereophotographs. Eyes with visible localized RNFL defects had significantly thinner mGCIPL thickness compared to healthy eyes (68.3 ± 11.4 μm versus 79.2 ± 6.6 μm respectively, P<0.001) and similar mGCIPL thickness to glaucomatous eyes without localized RNFL defects (68.6 ± 11.2 μm, P = 1.000). The average mGCIPL thickness in eyes with RNFL defects was 14% less than similarly aged healthy controls. For 29 eyes with a visible RNFL defect in just one hemiretina (superior or inferior) mGCIPL was thinnest in the same hemiretina in 26 eyes (90%). Eyes with inferior-temporal RNFL defects also had significantly thinner inferior-temporal mGCIPL (P<0.001) and inferior mGCIPL (P = 0.030) compared to glaucomatous eyes without a visible RNFL defect. Conclusion The current study indicates that presence of a localized RNFL defect is likely to indicate significant macular damage, particularly in the region of the macular that topographically corresponds to the location of the RNFL defect. PMID:27537107

  7. Recombination-current suppression in GaAs p-n junctions grown on AlGaAs buffer layers by molecular-beam epitaxy

    NASA Astrophysics Data System (ADS)

    Rancour, D. P.; Melloch, M. R.; Pierret, R. F.; Lundstrom, M. S.; Klausmeier-Brown, M. E.; Kyono, C. S.

    1987-08-01

    n+pp+GaAs and n+pP+ GaAs/GaAs/Al0.3Ga0.7As mesa diodes have been fabricated from films grown by molecular-beam epitaxy. The diodes made from films employing an AlGaAs buffer layer show marked improvements (a factor of 5 reduction) in recombination current densities. Deep level transient spectroscopy measurements moreover indicate that deep level concentrations are reduced by the AlGaAs buffer.

  8. Ideal p-n Diode Current Equation for Organic Heterojunction using a Buffer Layer: Derivation and Numerical Study

    NASA Astrophysics Data System (ADS)

    Kim, SeongMin; Ha, Jaewook; Kim, Jin-Baek

    2016-04-01

    The equation of p-n diode current-voltage (J-V) of an organic heterojunction (HJ) including a hole and electron buffer layer is derived, and its characteristics are numerically simulated based on a polaron-pair model Giebink et al. (Forrest, Phys. Rev. B 82; 1-12, 2010). In particular, the correlation between a fraction of the potential drop for an electron/hole buffer ( δ e - b / δ h - b ) and for a donor (D)/acceptor (A) ( δ D / δ A ) is numerically investigated for J-V curves. As a result, the lowest diode current (DC) is obtained for the condition of δ e - b + δ A ≅ 0 or δ D + δ h - b ≅ 1. It is suggested that it is important to characterize the lowest DC curve for the state of D/A blending with a condition of a fraction of the potential drop ( δ e - b / δ h - b ). Under these circumstances, the transport of holes ( h +) from a DC source at the reverse bias is effectively limited.

  9. The Use of Bowman’s Layer Vertical Topographic Thickness Map in the Diagnosis of Keratoconus

    PubMed Central

    Shousha, Mohamed Abou; Perez, Victor L.; Canto, Ana Paula Fraga Santini; Vaddavalli, Pravin K.; Sayyad, Fouad El; Cabot, Florence; Feuer, William J.; Wang, Jianhua; Yoo, Sonia H.

    2014-01-01

    Purpose To evaluate the use of Bowman’s layer (BL) vertical topographic thickness maps in diagnosing keratoconus (KC). Design Prospective, case control, interventional case series. Participants 42 eyes; 22 eyes of 15 normal subjects and 20 eyes of 15 KC patients. Intervention BL 2-dimensional 9 mm vertical topographic thickness maps were created using custom-made ultra high-resolution optical coherence tomography. Main Outcome Measures BL average and minimum thicknesses of the inferior half of the cornea, Bowman’s ectasia index (BEI; defined as BL minimum thickness of the inferior half of the cornea divided by BL average thickness of the superior half of the cornea multiplied by 100), BEI-Max (defined as BL minimum thickness of the inferior half of the cornea divided by BL maximum thickness of the superior half of the cornea multiplied by 100), KC patients’ Keratometric astigmatism (Ast-K) and average keratometric readings (Avg-K). Results In KC patients, BL vertical thickness maps disclosed localized relative inferior thinning of the BL. Inferior BL average thickness (normal=15±2, KC=12±3 μm), inferior BL minimum thickness (normal=13±2, KC=7±3 μm), BEI (normal=91±7, KC=48±14) and BEI-Max (normal=75±8; KC=40±13) all showed highly significant differences in KC compared to normal subjects (P<0.001). Receiver-operating characteristics (ROC) curve analysis showed excellent predictive accuracy for BEI and BEI-max with 100% sensitivity and specificity (area under the curve or AUC of 1) with cut-off values of 80 and 60, respectively. AUC of inferior BL average thickness and minimum thickness were 0.87 and 0.96 with sensitivity of 80% and 93%, respectively and specificity of 93% and 93%, respectively. Inferior BL average thickness, inferior BL minimum thickness, BEI and BEI-Max correlated highly to Ast-K (R=−0.72; −0.82; −0.84 and −0.82, respectively; P<0.001) and to Avg-K (R=−0.62; P<0.001, R=−0.59; P=0.001, R=−0.60; P<0.001 and R=−0.59, P

  10. Evaluation of AlGaN/GaN high electron mobility transistors grown on ZrTi buffer layers with sapphire substrates

    DOE PAGESBeta

    Ren, Fan; Pearton, Stephen J.; Ahn, Shihyun; Lin, Yi -Hsuan; Machuca, Francisco; Weiss, Robert; Welsh, Alex; McCartney, Martha R.; Smith, David J.; Kravchenko, Ivan I.

    2016-09-21

    Here, AlGaN/GaN high electron mobility transistors (HEMTs) have been grown on sapphire substrates, using ZrTi buffer layers to provide in-plane lattice-matching to hexagonal GaN. X-ray diffraction (XRD) as well as cross-section transmission electron microscopy (TEM) were used to assess the quality of the HEMT structure. The XRD 2θ scans showed full-width-at-half-maximum values of 0.16°, 0.07°, and 0.08° for ZrTi alloy, GaN buffer layer, and the entire HEMT structure, respectively. TEM studies of the GaN buffer layer and the AlN/ZrTi/AlN stack showed the importance of growing thin AlN buffer layers on the ZrTi layer prior to growth of the GaN buffermore » layer. The density of threading dislocations in the GaN channel layer of the HEMT structure was estimated to be in the 108 cm–2 range. The HEMT device exhibited a saturation drain current density of 820 mA/mm, and the channel of the fabricated HEMTs could be well modulated. A cutoff frequency (fT) of 8.9 GHz and a maximum frequency of oscillation (fmax) of 17.3 GHz were achieved for HEMTs with gate dimensions of 1 × 200 μm.« less

  11. Finding the lost open-circuit voltage in polymer solar cells by UV-ozone treatment of the nickel acetate anode buffer layer.

    PubMed

    Wang, Fuzhi; Sun, Gang; Li, Cong; Liu, Jiyan; Hu, Siqian; Zheng, Hua; Tan, Zhan'ao; Li, Yongfang

    2014-06-25

    Efficient polymer solar cells (PSCs) with enhanced open-circuit voltage (Voc) are fabricated by introducing solution-processed and UV-ozone (UVO)-treated nickel acetate (O-NiAc) as an anode buffer layer. According to X-ray photoelectron spectroscopy data, NiAc partially decomposed to NiOOH during the UVO treatment. NiOOH is a dipole species, which leads to an increase in the work function (as confirmed by ultraviolet photoemission spectroscopy), thus benefitting the formation of ohmic contact between the anode and photoactive layer and leading to increased Voc. In addition, the UVO treatment improves the wettability between the substrate and solvent of the active layer, which facilitates the formation of an upper photoactive layer with better morphology. Further, the O-NiAc layer can decrease the series resistance (Rs) and increase the parallel resistance (Rp) of the devices, inducing enhanced Voc in comparison with the as-prepared NiAc-buffered control devices without UVO treatment. For PSCs based on the P3HT:PCBM system, Voc increases from 0.50 to 0.60 V after the NiAc buffer layer undergoes UVO treatment. Similarly, in the P3HT:ICBA system, the Voc value of the device with a UVO-treated NiAc buffer layer increases from 0.78 to 0.88 V, showing an enhanced power conversion efficiency of 6.64%.

  12. Finding the lost open-circuit voltage in polymer solar cells by UV-ozone treatment of the nickel acetate anode buffer layer.

    PubMed

    Wang, Fuzhi; Sun, Gang; Li, Cong; Liu, Jiyan; Hu, Siqian; Zheng, Hua; Tan, Zhan'ao; Li, Yongfang

    2014-06-25

    Efficient polymer solar cells (PSCs) with enhanced open-circuit voltage (Voc) are fabricated by introducing solution-processed and UV-ozone (UVO)-treated nickel acetate (O-NiAc) as an anode buffer layer. According to X-ray photoelectron spectroscopy data, NiAc partially decomposed to NiOOH during the UVO treatment. NiOOH is a dipole species, which leads to an increase in the work function (as confirmed by ultraviolet photoemission spectroscopy), thus benefitting the formation of ohmic contact between the anode and photoactive layer and leading to increased Voc. In addition, the UVO treatment improves the wettability between the substrate and solvent of the active layer, which facilitates the formation of an upper photoactive layer with better morphology. Further, the O-NiAc layer can decrease the series resistance (Rs) and increase the parallel resistance (Rp) of the devices, inducing enhanced Voc in comparison with the as-prepared NiAc-buffered control devices without UVO treatment. For PSCs based on the P3HT:PCBM system, Voc increases from 0.50 to 0.60 V after the NiAc buffer layer undergoes UVO treatment. Similarly, in the P3HT:ICBA system, the Voc value of the device with a UVO-treated NiAc buffer layer increases from 0.78 to 0.88 V, showing an enhanced power conversion efficiency of 6.64%. PMID:24878826

  13. To determine ice layer thickness of Europa by high energy neutrino

    NASA Astrophysics Data System (ADS)

    Shoji, D.; Kurita, K.; Tanaka, H. K.

    2010-12-01

    Europa, the second closest Galilean satellite is one of the targets which are suspected to have an internal ocean. Detection and characterization of the internal ocean is one of the main subjects for Europa orbiter exploration. Although the gravitational data has shown the thickness of the surface H2O layer of 80-170km[1], it can not determine the phase of H2O. The variations in the magnetic field associated with the induced current in the internal ocean can determine the thickness of the layer of ice if satellite's orbits satisfy the required conditions. Observations of tidal amplitude forced by Jupiter can also resolve the thickness of the surface lithosphere[2]. At moment because of the lack of observational constraints there exist two contrasting models:thick ice layer model and thin model. Here we propose new method to detect the ocean directly based on the radiation by high energy neutrino interacted with matter. Schaefer et al[3] have proposed a similar method to determine ice layer thickness. We will focus on the detection of internal ocean for Europa and present the method is suitable for actual situations of Europa exploration by numerical simulations. Neutrino is famous for its traveling at long distance without any interaction with matter. When high energy neutrinos traverse in Europa hadronic showers are produced by the weak interaction with the nucleons that makes the body of Europa. These hadronic showers induces excess electrons. Because of these excess electrons, Cherenkov photons are emitted. When this radiation occurs in the ice layer, radiations whose wave length is over 10cm should be coherent because the scale of the shower becomes small (a few cm) in the ice, which is called as Askaryan effect[3]. Thus, the intensity of the radiation whose frequency is a few GHz should be enhanced. Since ice has a much longer attenuation length than water, the radiations which occur in the surface ice layer could be detected by the antenna outside Europa but

  14. Determination of the thickness and orientation of few-layer tungsten ditelluride using polarized Raman spectroscopy

    NASA Astrophysics Data System (ADS)

    Kim, Minjung; Han, Songhee; Kim, Jung Hwa; Lee, Jae-Ung; Lee, Zonghoon; Cheong, Hyeonsik

    2016-09-01

    Orthorhombic tungsten ditelluride (WTe2), with a distorted 1T structure, exhibits a large magnetoresistance that depends on the orientation, and its electrical characteristics changes from semimetallic to insulating as the thickness decreases. Through polarized Raman spectroscopy in combination with transmission electron diffraction, we establish a reliable method to determine the thickness and crystallographic orientation of few-layer WTe2. The Raman spectrum shows a pronounced dependence on the polarization of the excitation laser. We found that the separation between two Raman peaks at ∼90 cm‑1 and at 80–86 cm‑1, depending on thickness, is a reliable fingerprint for determination of the thickness. For determination of the crystallographic orientation, the polarization dependence of the A 1 modes, measured with the 632.8 nm excitation, turns out to be the most reliable. We also discovered that the polarization behaviors of some of the Raman peaks depend on the excitation wavelength as well as thickness, indicating a close interplay between the band structure and anisotropic Raman scattering cross section.

  15. Enhancing cell-free layer thickness by bypass channels in a wall.

    PubMed

    Saadatmand, M; Shimogonya, Y; Yamaguchi, T; Ishikawa, T

    2016-07-26

    When blood flows near a wall, red blood cells (RBCs) drift away from the wall and a cell-free layer (CFL) is formed adjacent to the wall. Controlling the CFL thickness is important for preventing adhesion of cells in the design of biomedical devices. In this study, a novel wall configuration with stenoses and bypass channels is proposed to increase the CFL thickness. We found that the presence of bypass channels modified the spatial distribution of cells and substantially increased the CFL downstream of the stenosis. A single-bypass geometry with 5% hematocrit (Hct) blood flow showed a 1.7μm increase in CFL thickness compared to without the bypass. In the case of three bypass channels, a 3μm increase in CFL thickness was observed. The CFL enhancement was observed up to 10% Hct, but no significant enhancement of CFL was indicated for 20% Hct blood flow. The mechanism of the CFL enhancement was investigated using a numerical simulation of the flow field. The results showed that the distance between each streamline and the corner of the stenosis compared with size of RBC was important parameter in regulating CFL thickness. These results show the potential of the proposed mechanism to prevent adhesion of cells to biomedical devices. PMID:26803337

  16. Determination of the thickness and orientation of few-layer tungsten ditelluride using polarized Raman spectroscopy

    NASA Astrophysics Data System (ADS)

    Kim, Minjung; Han, Songhee; Kim, Jung Hwa; Lee, Jae-Ung; Lee, Zonghoon; Cheong, Hyeonsik

    2016-09-01

    Orthorhombic tungsten ditelluride (WTe2), with a distorted 1T structure, exhibits a large magnetoresistance that depends on the orientation, and its electrical characteristics changes from semimetallic to insulating as the thickness decreases. Through polarized Raman spectroscopy in combination with transmission electron diffraction, we establish a reliable method to determine the thickness and crystallographic orientation of few-layer WTe2. The Raman spectrum shows a pronounced dependence on the polarization of the excitation laser. We found that the separation between two Raman peaks at ˜90 cm-1 and at 80-86 cm-1, depending on thickness, is a reliable fingerprint for determination of the thickness. For determination of the crystallographic orientation, the polarization dependence of the A 1 modes, measured with the 632.8 nm excitation, turns out to be the most reliable. We also discovered that the polarization behaviors of some of the Raman peaks depend on the excitation wavelength as well as thickness, indicating a close interplay between the band structure and anisotropic Raman scattering cross section.

  17. Growth and characterization of ZnIn 2Se 4 buffer layer on CuInSe 2 thin films

    NASA Astrophysics Data System (ADS)

    Sun, Xianzhong; He, Yue; Feng, Jiayou

    2009-12-01

    The p-type CuInSe 2 (CIS) films were prepared by electrodeposition following the vacuum annealing process. Zn element was diffused into the CIS film samples at 350 °C by heating Zn grains in vacuum. Then, ZnIn 2Se 4 (ZIS) buffer layer was fabricated on CIS thin film by this thermal diffusion process. The formation of ZIS phase was confirmed by X-ray diffraction pattern (XRD), Raman spectroscopy, and X-ray photoelectron spectroscopy (XPS). Dark I- V measurement shows that the Zn-doped CIS (0.89 at%)/Mo structure reveals the rectifying property, which indicates that a p-n junction was formed.

  18. Solvent effects of a dimethyldicyanoquinonediimine buffer layer as N-type material on the performance of organic photovoltaic cells.

    PubMed

    Yang, Eui Yeol; Oh, Se Young

    2014-08-01

    In the present work, we have fabricated organic photovoltaic cells consisting of ITO/PEDOT:PSS/P3HT:PCBM/DMDCNQI/Al using a dip-coating method with various solvent systems. We have investigated solvent effects (such as solubility, viscosity and vapor pressure) in deposition of a thin DMDCNQI buffer layer on the performance of organic photovoltaic cells. The solvent system which had low viscosity and good solubility properties, made a dense and uniform DMDCNQI ultra thin film, resulting in a high performance device. In particular, a prepared organic photovoltaic cell was fabricated using a cosolvent system (methanol:methylenechloride = 3:1) and showed a maximum power conversion efficiency of 4.53%.

  19. Effect of thickness and boundary conditions on the behavior of viscoelastic layers in sliding contact with wavy profiles

    NASA Astrophysics Data System (ADS)

    Menga, N.; Afferrante, L.; Carbone, G.

    2016-10-01

    In this work, the sliding contact of viscoelastic layers of finite thickness on rigid sinusoidal substrates is investigated within the framework of Green's functions approach. The periodic Green's functions are determined by means of a novel formalism, which can be applied, in general, to either 2D and 3D viscoelastic periodic contacts, regardless of the contact geometry and boundary conditions. Specifically, two different configurations are considered here: a free layer with a uniform pressure applied on the top, and a layer rigidly confined on the upper boundary. It is shown that the thickness affects the contact behavior differently, depending on the boundary conditions. In particular, the confined layer exhibits increasing contact stiffness when the thickness is reduced, leading to higher loads for complete contact to occur. The free layer, instead, becomes more and more compliant as thickness is reduced. We find that, in partial contact, the layer thickness and the boundary conditions significantly affect the frictional behavior. In fact, at low contact penetrations, the confined layer shows higher friction coefficients compared to the free layer case; whereas, the scenario is reversed at large contact penetrations. Furthermore, for confined layers, the sliding speed related to the friction coefficient peak is shifted as the contact penetration increases. However, once full contact is established, the friction coefficient shows a unique behavior regardless of the layer thickness and boundary conditions.

  20. AlGaN/GaN field effect transistors for power electronics—Effect of finite GaN layer thickness on thermal characteristics

    SciTech Connect

    Hodges, C. Anaya Calvo, J.; Kuball, M.; Stoffels, S.; Marcon, D.

    2013-11-11

    AlGaN/GaN heterostructure field effect transistors with a 150 nm thick GaN channel within stacked Al{sub x}Ga{sub 1−x}N layers were investigated using Raman thermography. By fitting a thermal simulation to the measured temperatures, the thermal conductivity of the GaN channel was determined to be 60 W m{sup −1} K{sup −1}, over 50% less than typical GaN epilayers, causing an increased peak channel temperature. This agrees with a nanoscale model. A low thermal conductivity AlGaN buffer means the GaN spreads heat; its properties are important for device thermal characteristics. When designing power devices with thin GaN layers, as well as electrical considerations, the reduced channel thermal conductivity must be considered.

  1. Structural and morphological properties of GaN buffer layers grown by ammonia molecular beam epitaxy on SiC substrates for AlGaN/GaN high electron mobility transistors

    SciTech Connect

    Corrion, A. L.; Poblenz, C.; Wu, F.; Speck, J. S.

    2008-05-01

    The impact of growth conditions on the surface morphology and structural properties of ammonia molecular beam epitaxy GaN buffers layers on SiC substrates was investigated. The threading dislocation (TD) density was found to decrease with decreasing NH{sub 3}:Ga flux ratio, which corresponded to an increase in surface roughness and reduction in residual compressive lattice mismatch stress. Furthermore, the dislocation density and compressive stress decreased for increasing buffer thickness. TD inclination was proposed to account for these observations. Optimized surface morphologies were realized at high NH{sub 3}:Ga flux ratios and were characterized by monolayer-high steps, spiral hillocks, and pyramidal mounds, with rms roughness of {approx}1.0 nm over 2x2 {mu}m{sup 2} atomic force microscopy images. Smooth surface morphologies were realized over a large range of growth temperatures and fluxes, and growth rates of up to 1 {mu}m/h were achieved. TD densities in the buffers as low as 3x10{sup 9} cm{sup -2} were demonstrated. These buffers were highly insulating and were used in recently reported AlGaN/GaN HEMTs with power densities of >11 W/mm at 4 and 10 GHz.

  2. On-line thickness measurement for two-layer systems on polymer electronic devices.

    PubMed

    Grassi, Ana Perez; Tremmel, Anton J; Koch, Alexander W; El-Khozondar, Hala J

    2013-11-18

    During the manufacturing of printed electronic circuits, different layers of coatings are applied successively on a substrate. The correct thickness of such layers is essential for guaranteeing the electronic behavior of the final product and must therefore be controlled thoroughly. This paper presents a model for measuring two-layer systems through thin film reflectometry (TFR). The model considers irregular interfaces and distortions introduced by the setup and the vertical vibration movements caused by the production process. The results show that the introduction of these latter variables is indispensable to obtain correct thickness values. The proposed approach is applied to a typical configuration of polymer electronics on transparent and non-transparent substrates. We compare our results to those obtained using a profilometer. The high degree of agreement between both measurements validates the model and suggests that the proposed measurement method can be used in industrial applications requiring fast and non-contact inspection of two-layer systems. Moreover, this approach can be used for other kinds of materials with known optical parameters.

  3. Lithospheric strength and its relationship to the elastic and seismogenic layer thickness

    NASA Astrophysics Data System (ADS)

    Watts, A. B.; Burov, E. B.

    2003-08-01

    Plate flexure is a phenomenon that describes how the lithosphere responds to long-term (>105 yr) geological loads. By comparing the flexure in the vicinity of ice, volcano, and sediment loads to predictions based on simple plate models it has been possible to estimate the effective elastic thickness of the lithosphere, Te. In the oceans, Te is the range 2-50 km and is determined mainly by plate and load age. The continents, in contrast, are characterised by Te values of up to 80 km and greater. Rheological considerations based on data from experimental rock mechanics suggest that Te reflects the integrated brittle, elastic and ductile strength of the lithosphere. Te differs, therefore, from the seismogenic layer thickness, Ts, which is indicative of the depth to which anelastic deformation occurs as unstable frictional sliding. Despite differences in their time scales, Te and Ts are similar in the oceans where loading reduces the initial mechanical thickness to values that generally coincide with the thickness of the brittle layer. They differ, however, in continents, which, unlike oceans, are characterised by a multi-layer rheology. As a result, Te≫Ts in cratons, many convergent zones, and some rifts. Most rifts, however, are characterised by a low Te that has been variously attributed to a young thermal age of the rifted lithosphere, thinning and heating at the time of rifting, and yielding due to post-rift sediment loading. Irrespective of their origin, the Wilson cycle makes it possible for low values to be inherited by foreland basins which, in turn, helps explain why similarities between Te and Ts extend beyond rifts into other tectonic regions such as orogenic belts and, occasionally, the cratons themselves.

  4. Effect of dopent on the structural and optical properties of ZnS thin film as a buffer layer in solar cell application

    SciTech Connect

    Vashistha, Indu B. Sharma, S. K.; Sharma, Mahesh C.; Sharma, Ramphal

    2015-08-28

    In order to find the suitable alternative of toxic CdS buffer layer, deposition of pure ZnS and doped with Al by chemical bath deposition method have been reported. Further as grown pure and doped thin films have been annealed at 150°C. The structural and surface morphological properties have been characterized by X-Ray diffraction (XRD) and Atomic Force Microscope (AFM).The XRD analysis shows that annealed thin film has been polycrystalline in nature with sphalerite cubic crystal structure and AFM images indicate increment in grain size as well as growth of crystals after annealing. Optical measurement data give band gap of 3.5 eV which is ideal band gap for buffer layer for solar cell suggesting that the obtained ZnS buffer layer is suitable in a low-cost solar cell.

  5. The effects of buffer layers on the performance and stability of flexible InGaZnO thin film transistors on polyimide substrates

    SciTech Connect

    Ok, Kyung-Chul; Park, Jin-Seong E-mail: jsparklime@hanyang.ac.kr; Ko Park, Sang-Hee; Kim, H. E-mail: jsparklime@hanyang.ac.kr; Hwang, Chi-Sun; Soo Shin, Hyun; Bae, Jonguk

    2014-02-10

    We demonstrated the fabrication of flexible amorphous indium gallium zinc oxide thin-film transistors (TFTs) on high-temperature polyimide (PI) substrates, which were debonded from the carrier glass after TFT fabrication. The application of appropriate buffer layers on the PI substrates affected the TFT performance and stability. The adoption of the SiN{sub x}/AlO{sub x} buffer layers as water and hydrogen diffusion barriers significantly improved the device performance and stability against the thermal annealing and negative bias stress, compared to single SiN{sub x} or SiO{sub x} buffer layers. The substrates could be bent down to a radius of curvature of 15 mm and the devices remained normally functional.

  6. Impact of silicon epitaxial thickness layer in high power diode devices

    NASA Astrophysics Data System (ADS)

    Mee, Cheh Chai; Arshad, M. K. Md.; Hashim, U.; Fathil, M. F. M.

    2016-07-01

    The p-i-n diode is one of the earliest semiconductor devices developed for power circuit application. It is formed with the intrinsically doped i.e. i-layer sandwiched between the p-type and n-type layers. In this paper, we focus on the integration of the intrinsic region of silicon p-i-n diode to the current-voltage characteristics. In our structure, n-type refers to the bulk substrate and intrinsic region refers to the epitaxial layer of the silicon substrate. We make a thickness variation in the intrinsic region of p-i-n diode and how it affects diode performance. An additional layer is added on the epitaxial layer during the process to control the diffusion from the bottom of bulk substrate. Result shows that intrinsic layer optimization has successfully enhances the diode device robustness in terms of diode current-voltage characteristics, which reflects better manufacturing yield and improve the final product performance.

  7. Impact of varying buffer thickness generated strain and threading dislocations on the formation of plasma assisted MBE grown ultra-thin AlGaN/GaN heterostructure on silicon

    SciTech Connect

    Chowdhury, Subhra; Biswas, Dhrubes

    2015-05-15

    Plasma-assisted molecular beam epitaxy (PAMBE) growth of ultra-thin Al{sub 0.2}Ga{sub 0.8}N/GaN heterostructures on Si(111) substrate with three buffer thickness (600 nm/400 nm/200 nm) have been reported. An unique growth process has been developed that supports lower temperature epitaxy of GaN buffer which minimizes thermally generated tensile strain through appropriate nitridation and AlN initiated epitaxy for achieving high quality GaN buffer which supports such ultra-thin heterostructures in the range of 10-15Å. It is followed by investigations of role of buffer thickness on formation of ultra-thin Al{sub 0.2}Ga{sub 0.8}N/GaN heterostructure, in terms of stress-strain and threading dislocation (TD). Structural characterization were performed by High-Resolution X-Ray Diffraction (HRXRD), room-temperature Photoluminescence (RT-PL), High Resolution Transmission Electron Microscopy (HRTEM) and Atomic Force Microscopy (AFM). Analysis revealed increasing biaxial tensile stress of 0.6918 ± 0.04, 1.1084, 1.1814 GPa in heterostructures with decreasing buffer thickness of 600, 400, 200 nm respectively which are summed up with residual tensile strain causing red-shift in RT-PL peak. Also, increasing buffer thickness drastically reduced TD density from the order 10{sup 10} cm{sup −2} to 10{sup 8} cm{sup −2}. Surface morphology through AFM leads to decrease of pits and root mean square value with increasing buffer thickness which are resulted due to reduction of combined effect of strain and TDs.

  8. Improving source/drain contact resistance of amorphous indium-gallium-zinc-oxide thin-film transistors using an n+-ZnO buffer layer

    NASA Astrophysics Data System (ADS)

    Hung, Chien-Hsiung; Wang, Shui-Jinn; Lin, Chieh; Wu, Chien-Hung; Chen, Yen-Han; Liu, Pang-Yi; Tu, Yung-Chun; Lin, Tseng-Hsing

    2016-06-01

    To avoid high temperature annealing in improving the source/drain (S/D) resistance (R DS) of amorphous indium-gallium-zinc-oxide (α-IGZO) thin-film transistors (TFTs) for flexible electronics, a simple and efficient technique using a sputtering-deposited n+-ZnO buffer layer (BL) sandwiched between the S/D electrode and the α-IGZO channel is proposed and demonstrated. It shows that the R DS of α-IGZO TFTs with the proposed n+-ZnO BL is reduced to 8.1 × 103 Ω as compared with 6.1 × 104 Ω of the conventional one. The facilitation of carrier tunneling between the S/D electrode and the α-IGZO channel through the use of the n+-ZnO BL to lower the effective barrier height therein is responsible for the R DS reduction. Effects of the chamber pressure on the carrier concentration of the sputtering-deposited n+-ZnO BL and the thickness of the BL on the degree of improvement in the performance of α-IGZO TFTs are analyzed and discussed.

  9. Improving source/drain contact resistance of amorphous indium–gallium–zinc-oxide thin-film transistors using an n+-ZnO buffer layer

    NASA Astrophysics Data System (ADS)

    Hung, Chien-Hsiung; Wang, Shui-Jinn; Lin, Chieh; Wu, Chien-Hung; Chen, Yen-Han; Liu, Pang-Yi; Tu, Yung-Chun; Lin, Tseng-Hsing

    2016-06-01

    To avoid high temperature annealing in improving the source/drain (S/D) resistance (R DS) of amorphous indium–gallium–zinc-oxide (α-IGZO) thin-film transistors (TFTs) for flexible electronics, a simple and efficient technique using a sputtering-deposited n+-ZnO buffer layer (BL) sandwiched between the S/D electrode and the α-IGZO channel is proposed and demonstrated. It shows that the R DS of α-IGZO TFTs with the proposed n+-ZnO BL is reduced to 8.1 × 103 Ω as compared with 6.1 × 104 Ω of the conventional one. The facilitation of carrier tunneling between the S/D electrode and the α-IGZO channel through the use of the n+-ZnO BL to lower the effective barrier height therein is responsible for the R DS reduction. Effects of the chamber pressure on the carrier concentration of the sputtering-deposited n+-ZnO BL and the thickness of the BL on the degree of improvement in the performance of α-IGZO TFTs are analyzed and discussed.

  10. Large-roll growth of 25-inch hexagonal BN monolayer film for self-release buffer layer of free-standing GaN wafer

    PubMed Central

    Wu, Chenping; Soomro, Abdul Majid; Sun, Feipeng; Wang, Huachun; Huang, Youyang; Wu, Jiejun; Liu, Chuan; Yang, Xiaodong; Gao, Na; Chen, Xiaohong; Kang, Junyong; Cai, Duanjun

    2016-01-01

    Hexagonal boron nitride (h-BN) is known as promising 2D material with a wide band-gap (~6 eV). However, the growth size of h-BN film is strongly limited by the size of reaction chamber. Here, we demonstrate the large-roll synthesis of monolayer and controllable sub-monolayer h-BN film on wound Cu foil by low pressure chemical vapor deposition (LPCVD) method. By winding the Cu foil substrate into mainspring shape supported by a multi-prong quartz fork, the reactor size limit could be overcome by extending the substrate area to a continuous 2D curl of plane inward. An extremely large-size monolayer h-BN film has been achieved over 25 inches in a 1.2” tube. The optical band gap of h-BN monolayer was determined to be 6.0 eV. The h-BN film was uniformly transferred onto 2” GaN or 4” Si wafer surfaces as a release buffer layer. By HVPE method, overgrowth of thick GaN wafer over 200 μm has been achieved free of residual strain, which could provide high quality homo-epitaxial substrate. PMID:27756906

  11. Attenuation Tomography of Body Waves in Thickness-varying Layered Media

    NASA Astrophysics Data System (ADS)

    Cao, H.; Zhou, H.

    2006-12-01

    The intrinsic attenuation of seismic waves, which is quantified as inverse to the quality factor (Q) of a medium, is a well-publicized and yet poorly studied subject. While it is common to deduce Q values from measured dispersion data for surface waves, previous studies on the intrinsic attenuation of body waves have relied on measurements of the waveform of first arrivals or reflections. Better understanding is needed for both solid Earth geophysics and applied seismology to quantify the contributing factors to seismic attenuation and decompose Q from other factors because Q is closely related to rock property and fluid saturation. This study focuses on forward modeling and tomographic inversion for the Q values in thickness-varying layered media. Many of the existing theoretical Q models work in such media. Our work is an extension of the deformable- layer tomography (Zhou, 2004) to dissipative media. In the first phase of this study, we evaluated, through numerical modeling the various factors contributing to the attenuation of body waves. Theoretically, there are intrinsic attenuation, which is related to rock and pore fluid properties, and attenuation due to wave propagation effects, such as geometrical spreading and energy partition across interfaces (transmission and reflection). We made several representative numerical models, and conducted forward modeling using both wave theory and ray theory to quantify the amount of the attenuation of body waves due to different factors. In the second phase, we are integrating the forward modeling with the deformable-layer tomography algorithm to develop means to invert for Q distribution in thickness-varying layer media. While the deformable-layer tomography determines layer velocities and geometry, the current work intends to invert for Q values of the thickness-varying model layers as well as parameters associated with interface energy partition and geometric spreading. In the third phase, we plan to apply the

  12. Weakly nonlinear Rayleigh-Taylor instability of a finite-thickness fluid layer

    SciTech Connect

    Wang, L. F. Ye, W. H. Liu, Jie; He, X. T.; Guo, H. Y.; Wu, J. F. Zhang, W. Y.

    2014-12-15

    A weakly nonlinear (WN) model has been developed for the Rayleigh-Taylor instability of a finite-thickness incompressible fluid layer (slab). We derive the coupling evolution equations for perturbations on the (upper) “linearly stable” and (lower) “linearly unstable” interfaces of the slab. Expressions of temporal evolutions of the amplitudes of the perturbation first three harmonics on the upper and lower interfaces are obtained. The classical feedthrough (interface coupling) solution obtained by Taylor [Proc. R. Soc. London A 201, 192 (1950)] is readily recovered by the first-order results. Our third-order model can depict the WN perturbation growth and the saturation of linear (exponential) growth of the perturbation fundamental mode on both interfaces. The dependence of the WN perturbation growth and the slab distortion on the normalized layer thickness (kd) is analytically investigated via the third-order solutions. Comparison is made with Jacobs-Catton's formula [J. W. Jacobs and I. Catton, J. Fluid Mech. 187, 329 (1988)] of the position of the “linearly unstable” interface. Using a reduced formula, the saturation amplitude of linear growth of the perturbation fundamental mode is studied. It is found that the finite-thickness effects play a dominant role in the WN evolution of the slab, especially when kd < 1. Thus, it should be included in applications where the interface coupling effects are important, such as inertial confinement fusion implosions and supernova explosions.

  13. Superconducting layer thickness dependence of magnetic relaxation property in CVD processed YGdBCO coated conductors

    NASA Astrophysics Data System (ADS)

    Takahashi, Y.; Kiuchi, M.; Otabe, E. S.; Matsushita, T.; Shikimachi, K.; Watanabe, T.; Kashima, N.; Nagaya, S.

    2011-11-01

    One of the most important properties of coated conductors for Superconducting Magnetic Energy Storage (SMES) is the relaxation property of persistent superconducting current. This property can be quantitatively characterized by the apparent pinning potential U0∗. In this paper, the dependence of U0∗ on the thickness of superconducting layer d is investigated in the range of 0.33-1.43 μm at the temperature range of 20-30 K and in magnetic fields up to 6.5 T for Y 0.7Gd 0.3Ba 2Cu 3O 7- δ coated conductors. It was found that the value of critical current density did not appreciably depend on d at 20 K. This indicates that no structural deterioration of superconducting layer occurs during the process of increasing thickness. U0∗ increases and then tends to decrease with an increasing magnetic field. The magnetic field at which U0∗ starts to decrease increases with increasing thickness. This property was analyzed using the flux creep-flow model. Application of scaling law is examined for the dependence of U0∗ on magnetic field and temperature. It was found that the dependence could be expressed using scaling parameters B,U0 peak∗ in the temperature range 20-30 K.

  14. Decreased retinal nerve fiber layer thickness in patients with obstructive sleep apnea syndrome

    PubMed Central

    Sun, Cheng-Lin; Zhou, Li-Xiao; Dang, Yalong; Huo, Yin-Ping; Shi, Lei; Chang, Yong-Jie

    2016-01-01

    Abstract Objective: To investigate the changes of retinal nerve fiber layer (RNFL) thickness in obstructive sleep apnea syndrome (OSAS) patients. Methods: Relevant studies were selected from 3 major literature databases (PubMed, Cochrane Library, and EMBASE) without language restriction. Main inclusion criteria is that a case-control study in which RNFL thickness was measured by a commercial available optical coherence tomography (OCT) in OSAS patients. Meta-analysis was performed using STATA 12.0 software. Efficacy estimates were evaluated by weighted mean difference with corresponding 95% confidence intervals (CIs). Primary outcome evaluations were: the average changes of RNFL thickness in total OSAS patients, subgroup analysis of RNFL thickness changes in patients of different OSAS stages, and subgroup analysis of 4-quadrant RNFL thickness changes in total OSAS patients. Results: Of the initial 327 literatures, 8 case-control studies with 763 eyes of OSA patients and 474 eyes of healthy controls were included (NOS scores ≥6). For the people of total OSAS, there had an average 2.92 μm decreased RNFL thickness compared with controls (95% CI: −4.61 to −1.24, P = 0.001). For subgroup analysis of OSAS in different stages, the average changes of RNFL thickness in mild, moderate, severe, and moderate to severe OSAS were 2.05 (95% CI: −4.40 to 0.30, P = 0.088), 2.32 (95% CI: −5.04 to 0.40, P = 0.094), 4.21 (95% CI: −8.36 to −0.06, P = 0.047), and 4.02 (95% CI: −7.65 to −0.40, P = 0.03), respectively. For subgroup analysis of 4-quadrant, the average changes of RNFL thickness in Superior, Nasal, Inferior, and Temporal quadrant were 2.43 (95% CI: −4.28 to −0.57, P = 0.01), 1.41 (95% CI: −3.33 to 0.51, P = 0.151), 3.75 (95% CI: −6.92 to −0.59, P = 0.02), and 0.98 (95% CI: −2.49 to 0.53, P = 0.203), respectively. Conclusion: Our study suggests that RNFL thickness in OSAS patients is much thinner than

  15. Strain-driven synthesis of <112> direction InAs nanowires in V-grooved trenches on Si using InP/GaAs buffer layers

    NASA Astrophysics Data System (ADS)

    Li, Shiyan; Zhou, Xuliang; Kong, Xiangting; Li, Mengke; Mi, Junping; Wang, Mengqi; Pan, Jiaoqing

    2016-09-01

    The catalyst-free metal organic vapor phase epitaxial growth of InAs nanowires on silicon (001) substrates is investigated by using selectively grown InP/GaAs buffer layers in V-grooved trenches. A strain-driven mechanism of self-aligned <112> direction InAs nanowires growing is proposed and demonstrated by the transmission electron microscopy measurement. The morphology of InAs nanowires is tapered in diameter and exhibits a hexagonal cross-section. The defect-free InAs nanowire shows a pure zinc blende crystal structure and an epitaxial relationship with InP buffer layer.

  16. Electrocaloric properties of ferroelectric-paraelectric superlattices controlled by the thickness of paraelectric layer in a wide temperature range

    SciTech Connect

    Ma, D. C.; Lin, S. P.; Chen, W. J.; Zheng, Yue Xiong, W. M.; Wang, Biao

    2014-10-15

    As functions of the paraelectric layer thickness, misfit strain and temperature, the electrocaloric properties of ferroelectric-paraelectric superlattices are investigated using a time-dependent Ginzburg-Landau thermodynamic model. Ferroelectric phase transition driven by the relative thickness of the superlattice is found to dramatically impact the electrocaloric response. Near the phase transition temperature, the magnitude of the electrocaloric effect is maximized and shifted to lower temperatures by increasing the relative thickness of paraelectric layer. Theoretical calculations also imply that the electrocaloric effect of the superlattices depends not only on the relative thickness of paraelectric layer but also on misfit strain. Furthermore, control of the relative thickness of paraelectric layer and the misfit strain can change availably both the magnitude and the temperature sensitivity of the electrocaloric effect, which suggests that ferroelectric-paraelectric superlattices may be promising candidates for use in cooling devices in a wide temperature range.

  17. Retinal Nerve Fiber Layer Thickness in Children with Optic Pathway Gliomas

    PubMed Central

    Avery, Robert A.; Liu, Grant T.; Fisher, Michael J.; Quinn, Graham E.; Belasco, Jean B.; Phillips, Peter C.; Maguire, Maureen G.; Balcer, Laura J.

    2010-01-01

    Purpose To determine the relation of high-contrast visual acuity (VA) and low-contrast letter acuity with retinal nerve fiber layer (RNFL) thickness in children with optic pathway gliomas. Design Cross-sectional convenience sample, with prospective data collection, from a tertiary care children’s hospital of patients with optic pathway gliomas associated with Neurofibromatosis type 1, sporadic OPG and Neurofibromatosis type 1 without OPG. Methods Patients performed best corrected VA testing using surrounded HOTV optotypes and low-contrast letter acuity (5%, 2.5% and 1.25% low contrast Sloan letter charts). Mean RNFL thickness (microns) was measured by a Stratus optical coherence tomography (Carl Zeiss Meditec, Dublin, CA) using the fast RNFL thickness protocol. Eyes were classified as having abnormal vision if they had high-contrast VA > 0.1 logMAR or visual field loss. The association of subject age, glioma location and RNFL thickness with both VA and low-contrast letter acuity scores was evaluated by one-way analysis of variance and linear regression, using the generalized estimating equation approach to account for within-patient intereye correlations. Results Eighty-nine eyes of patients with optic pathway gliomas were included and 41 were classified as having abnormal VA or visual field loss. Reduced RNFL thickness was significantly associated with higher logMAR scores for both VA (P < 0.001) and all low-contrast letter acuity charts (P < 0.001) when accounting for age and glioma location. Conclusions Eyes of most children with optic pathway gliomas and decreased RNFL thickness had abnormal visual acuity or visual field loss. PMID:21232732

  18. Enhanced Lifetime of Polymer Solar Cells by Surface Passivation of Metal Oxide Buffer Layers.

    PubMed

    Venkatesan, Swaminathan; Ngo, Evan; Khatiwada, Devendra; Zhang, Cheng; Qiao, Qiquan

    2015-07-29

    The role of electron selective interfaces on the performance and lifetime of polymer solar cells were compared and analyzed. Bilayer interfaces consisting of metal oxide films with cationic polymer modification namely poly ethylenimine ethoxylated (PEIE) were found to enhance device lifetime compared to bare metal oxide films when used as an electron selective cathode interface. Devices utilizing surface-modified metal oxide layers showed enhanced lifetimes, retaining up to 85% of their original efficiency when stored in ambient atmosphere for 180 days without any encapsulation. The work function and surface potential of zinc oxide (ZnO) and ZnO/PEIE interlayers were evaluated using Kelvin probe and Kelvin probe force microscopy (KPFM) respectively. Kelvin probe measurements showed a smaller reduction in work function of ZnO/PEIE films compared to bare ZnO films when aged in atmospheric conditions. KPFM measurements showed that the surface potential of the ZnO surface drastically reduces when stored in ambient air for 7 days because of surface oxidation. Surface oxidation of the interface led to a substantial decrease in the performance in aged devices. The enhancement in the lifetime of devices with a bilayer interface was correlated to the suppressed surface oxidation of the metal oxide layers. The PEIE passivated surface retained a lower Fermi level when aged, which led to lower trap-assisted recombination at the polymer-cathode interface. Further photocharge extraction by linearly increasing voltage (Photo-CELIV) measurements were performed on fresh and aged samples to evaluate the field required to extract maximum charges. Fresh devices with a bare ZnO cathode interlayer required a lower field than devices with ZnO/PEIE cathode interface. However, aged devices with ZnO required a much higher field to extract charges while aged devices with ZnO/PEIE showed a minor increase compared to the fresh devices. Results indicate that surface modification can act as a

  19. Is Retinal Nerve Fiber Layer Thickness Change Related to Headache Lateralization in Migraine?

    PubMed Central

    Demirci, Seden; Tok, Levent; Tok, Ozlem; Demirci, Serpil; Kutluhan, Süleyman

    2016-01-01

    Purpose To evaluate retinal nerve fiber layer (RNFL) thickness in migraine patients with unilateral headache. Methods A total of 58 patients diagnosed with migraine headache consistently occurring on the same side and 58 age- and sex-matched healthy subjects were evaluated in this cross-sectional study. RNFL thickness was measured using spectral-domain optical coherence tomography, and the side with the headache was com-pared with the contralateral side as well as with the results of healthy subjects. Results The mean patient age was 33.05 ± 8.83 years, and that of the healthy subjects was 31.44 ± 8.64 years (p = 0.32). The mean duration of disease was 10.29 ± 9.03 years. The average and nasal RNFL thicknesses were significantly thinner on the side of headache and on the contralateral side compared to control eyes (p < 0.05, for all). Thinning was higher on the side of the headache compared to the contralateral side; however, this difference was not statistically significant. Conclusions The RNFL thicknesses were thinner on the side of the headache compared to the contralateral side in the migraine patients with unilateral headache, but this difference was not statistically significant. PMID:27051262

  20. Magnetohydrodynamic effects on a charged colloidal sphere with arbitrary double-layer thickness.

    PubMed

    Hsieh, Tzu H; Keh, Huan J

    2010-10-01

    An analytical study is presented for the magnetohydrodynamic (MHD) effects on a translating and rotating colloidal sphere in an arbitrary electrolyte solution prescribed with a general flow field and a uniform magnetic field at a steady state. The electric double layer surrounding the charged particle may have an arbitrary thickness relative to the particle radius. Through the use of a simple perturbation method, the Stokes equations modified with an electric force term, including the Lorentz force contribution, are dealt by using a generalized reciprocal theorem. Using the equilibrium double-layer potential distribution from solving the linearized Poisson-Boltzmann equation, we obtain closed-form formulas for the translational and angular velocities of the spherical particle induced by the MHD effects to the leading order. It is found that the MHD effects on the particle movement associated with the translation and rotation of the particle and the ambient fluid are monotonically increasing functions of κa, where κ is the Debye screening parameter and a is the particle radius. Any pure rotational Stokes flow of the electrolyte solution in the presence of the magnetic field exerts no MHD effect on the particle directly in the case of a very thick double layer (κa→0). The MHD effect caused by the pure straining flow of the electrolyte solution can drive the particle to rotate, but it makes no contribution to the translation of the particle.

  1. A metal-oxide-semiconductor radiation dosimeter with a thick and defect-rich oxide layer

    NASA Astrophysics Data System (ADS)

    Liu, Hongrui; Yang, Yuhao; Zhang, Jinwen

    2016-04-01

    Enhancing the density of defects in the oxide layer is the main factor in improving the sensitivity of a metal-oxide-semiconductor (MOS) radiation dosimeter. This paper reports a novel MOS dosimeter with a very thick and defect-rich oxide layer fabricated by MEMS technology. The category of defects in SiO2 and their possible effect on the radiation dose sensing was analyzed. Then, we proposed combining deep-reactive-ion etching, thermal oxidation and low pressure chemical vapor deposition to realize an oxide layer containing multiple and large interfaces which can increase defects significantly. The trench-and-beam structure of silicon was considered in detail. The fabrication process was developed for obtaining a thick and compact MEMS-made SiO2. Our devices were irradiated by γ-rays of 60Co at 2 Gy per minute for 2 h and a thermally stimulated current (TSC) method was used to determine the readout of the dosimeters. Results show that there is a peak current of about 450 nA, indicating a total TSC charge of 158 μC and sensitivity of 1.1 μC mm-3·Gy, which is 40 times the sensitivity of previous MOS dosimeters.

  2. Thin and thick layers of resin-based sealer cement bonded to root dentine compared: Adhesive behaviour.

    PubMed

    Pane, Epita S; Palamara, Joseph E A; Messer, Harold H

    2015-12-01

    This study aims to evaluate tensile and shear bond strengths of one epoxy (AH) and two methacrylate resin-based sealers (EZ and RS) in thin and thick layers bonded to root dentine. An alignment device was prepared for accurate positioning of 20 root dentine cylinders in a predefined gap of 0.1 or 1 mm. Sealer was placed in the interface. Bond strength tests were conducted. Mode of failures and representative surfaces were evaluated. Data were analysed using anova and post-hoc tests, with P < 0.05. The thick layer of sealer produced higher bond strength, except for the shear bond strength of EZ. Significant differences between thin and thick layers were found only in tensile bond strengths of AH and RS. Mixed type of failure was constantly found with all sealers. Bond strengths of thick layers of resin-based sealers to root dentine tended to be higher than with thin layers.

  3. Quality-enhanced In{sub 0.3}Ga{sub 0.7}As film grown on GaAs substrate with an ultrathin amorphous In{sub 0.6}Ga{sub 0.4}As buffer layer

    SciTech Connect

    Gao, Fangliang; Li, Guoqiang

    2014-01-27

    Using low-temperature molecular beam epitaxy, amorphous In{sub 0.6}Ga{sub 0.4}As layers have been grown on GaAs substrates to act as buffer layers for the subsequent epitaxial growth of In{sub 0.3}Ga{sub 0.7}As films. It is revealed that the crystallinity of as-grown In{sub 0.3}Ga{sub 0.7}As films is strongly affected by the thickness of the large-mismatched amorphous In{sub 0.6}Ga{sub 0.4}As buffer layer. Given an optimized thickness of 2 nm, this amorphous In{sub 0.6}Ga{sub 0.4}As buffer layer can efficiently release the misfit strain between the In{sub 0.3}Ga{sub 0.7}As epi-layer and the GaAs substrate, trap the threading and misfit dislocations from propagating to the following In{sub 0.3}Ga{sub 0.7}As epi-layer, and reduce the surface fluctuation of the as-grown In{sub 0.3}Ga{sub 0.7}As, leading to a high-quality In{sub 0.3}Ga{sub 0.7}As film with competitive crystallinity to that grown on GaAs substrate using compositionally graded In{sub x}Ga{sub 1-x}As metamorphic buffer layers. Considering the complexity of the application of the conventional In{sub x}Ga{sub 1-x}As graded buffer layers, this work demonstrates a much simpler approach to achieve high-quality In{sub 0.3}Ga{sub 0.7}As film on GaAs substrate and, therefore, is of huge potential for the InGaAs-based high-efficiency photovoltaic industry.

  4. High current density and high PVCR Si/Si 1-xGe x DQW RTD formed with quadruple-layer buffer

    NASA Astrophysics Data System (ADS)

    Maekawa, Hirotaka; Sano, Yoshihiro; Ueno, Chihiro; Suda, Yoshiyuki

    2007-04-01

    As a strain-relief relaxed Si 1-xGe x buffer that is used for type II band offset formation, we have proposed a quadruple-Si 1-xGe x-layer (QL) buffer where misfit dislocations are evenly distributed in the lower two interfaces and a buffer surface with good crystallinity was obtained. The crystallinity of the buffer surface does not degrade by high P doping with a P concentration of ˜10 19 cm -3 during the buffer growth. A vertical-type electron-tunneling Si/Si 1-xGe x resonant tunneling diode (RTD) formed with the highly P-doped QL buffer exhibits a high current density and a high peak-to-valley current ratio (PVCR) value. A planer-type electron-tunneling Si/ Si 1-xGe x RTD formed with the same buffer using tetramethyl ammonium hydroxide (TMAH) etching and polyimide insulator, which is better suited for device integration, also exhibits a high current density and a high PVCR value and good initial static performance reproducibility.

  5. Vertically Oriented Growth of GaN Nanorods on Si Using Graphene as an Atomically Thin Buffer Layer.

    PubMed

    Heilmann, Martin; Munshi, A Mazid; Sarau, George; Göbelt, Manuela; Tessarek, Christian; Fauske, Vidar T; van Helvoort, Antonius T J; Yang, Jianfeng; Latzel, Michael; Hoffmann, Björn; Conibeer, Gavin; Weman, Helge; Christiansen, Silke

    2016-06-01

    The monolithic integration of wurtzite GaN on Si via metal-organic vapor phase epitaxy is strongly hampered by lattice and thermal mismatch as well as meltback etching. This study presents single-layer graphene as an atomically thin buffer layer for c-axis-oriented growth of vertically aligned GaN nanorods mediated by nanometer-sized AlGaN nucleation islands. Nanostructures of similar morphology are demonstrated on graphene-covered Si(111) as well as Si(100). High crystal and optical quality of the nanorods are evidenced through scanning transmission electron microscopy, micro-Raman, and cathodoluminescence measurements supported by finite-difference time-domain simulations. Current-voltage characteristics revealed high vertical conduction of the as-grown GaN nanorods through the Si substrates. These findings are substantial to advance the integration of GaN-based devices on any substrates of choice that sustains the GaN growth temperatures, thereby permitting novel designs of GaN-based heterojunction device concepts.

  6. Vertically Oriented Growth of GaN Nanorods on Si Using Graphene as an Atomically Thin Buffer Layer.

    PubMed

    Heilmann, Martin; Munshi, A Mazid; Sarau, George; Göbelt, Manuela; Tessarek, Christian; Fauske, Vidar T; van Helvoort, Antonius T J; Yang, Jianfeng; Latzel, Michael; Hoffmann, Björn; Conibeer, Gavin; Weman, Helge; Christiansen, Silke

    2016-06-01

    The monolithic integration of wurtzite GaN on Si via metal-organic vapor phase epitaxy is strongly hampered by lattice and thermal mismatch as well as meltback etching. This study presents single-layer graphene as an atomically thin buffer layer for c-axis-oriented growth of vertically aligned GaN nanorods mediated by nanometer-sized AlGaN nucleation islands. Nanostructures of similar morphology are demonstrated on graphene-covered Si(111) as well as Si(100). High crystal and optical quality of the nanorods are evidenced through scanning transmission electron microscopy, micro-Raman, and cathodoluminescence measurements supported by finite-difference time-domain simulations. Current-voltage characteristics revealed high vertical conduction of the as-grown GaN nanorods through the Si substrates. These findings are substantial to advance the integration of GaN-based devices on any substrates of choice that sustains the GaN growth temperatures, thereby permitting novel designs of GaN-based heterojunction device concepts. PMID:27124605

  7. Thickness-Dependent Dielectric Constant of Few-Layer In₂Se₃ Nanoflakes.

    PubMed

    Wu, Di; Pak, Alexander J; Liu, Yingnan; Zhou, Yu; Wu, Xiaoyu; Zhu, Yihan; Lin, Min; Han, Yu; Ren, Yuan; Peng, Hailin; Tsai, Yu-Hao; Hwang, Gyeong S; Lai, Keji

    2015-12-01

    The dielectric constant or relative permittivity (ε(r)) of a dielectric material, which describes how the net electric field in the medium is reduced with respect to the external field, is a parameter of critical importance for charging and screening in electronic devices. Such a fundamental material property is intimately related to not only the polarizability of individual atoms but also the specific atomic arrangement in the crystal lattice. In this Letter, we present both experimental and theoretical investigations on the dielectric constant of few-layer In2Se3 nanoflakes grown on mica substrates by van der Waals epitaxy. A nondestructive microwave impedance microscope is employed to simultaneously quantify the number of layers and local electrical properties. The measured ε(r) increases monotonically as a function of the thickness and saturates to the bulk value at around 6-8 quintuple layers. The same trend of layer-dependent dielectric constant is also revealed by first-principles calculations. Our results of the dielectric response, being ubiquitously applicable to layered 2D semiconductors, are expected to be significant for this vibrant research field.

  8. Sedimentation Velocity and Potential in Concentrated Suspensions of Charged Spheres with Arbitrary Double-Layer Thickness.

    PubMed

    Keh; Ding

    2000-07-15

    The sedimentation in a homogeneous suspension of charged spherical particles with an arbitrary thickness of the electric double layers is analytically studied. The effects of particle interactions are taken into account by employing a unit cell model. Overlap of the double layers of adjacent particles is allowed, and the polarization effect in the double layer surrounding each particle is considered. The electrokinetic equations that govern the ionic concentration distributions, the electric potential profile, and the fluid flow field in the electrolyte solution in a unit cell are linearized assuming that the system is only slightly distorted from equilibrium. Using a perturbation method, these linearized equations are solved for a symmetrically charged electrolyte with the surface charge density (or zeta potential) of the particle as the small perturbation parameter. An analytical expression for the settling velocity of the charged sphere in closed form is obtained from a balance among its gravitational, electrostatic, and hydrodynamic forces. A closed-form formula for the sedimentation potential in a suspension of identical charged spheres is also derived by using the requirement of zero net electric current. Our results demonstrate that the effects of overlapping double layers are quite significant, even for the case of thin double layers. Copyright 2000 Academic Press.

  9. The impact of layer thickness on the performance of additively manufactured lapping tools

    NASA Astrophysics Data System (ADS)

    Williams, Wesley B.

    2015-10-01

    Lower cost additive manufacturing (AM) machines which have emerged in recent years are capable of producing tools, jigs, and fixtures that are useful in optical fabrication. In particular, AM tooling has been shown to be useful in lapping glass workpieces. Various AM machines are distinguished by the processes, materials, build times, and build resolution they provide. This research investigates the impact of varied build resolution (specifically layer resolution) on the lapping performance of tools built using the stereolithographic assembly (SLA) process in 50 μm and 100 μm layer thicknesses with a methacrylate photopolymer resin on a high resolution desktop printer. As with previous work, the lapping tools were shown to remove workpiece material during the lapping process, but the tools themselves also experienced significant wear on the order of 2-3 times the mass loss of the glass workpieces. The tool wear rates for the 100 μm and 50 μm layer tools were comparable, but the 50 μm layer tool was 74% more effective at removing material from the glass workpiece, which is attributed to some abrasive particles being trapped in the coarser surface of the 100 um layer tooling and not being available to interact with the glass workpiece. Considering the tool wear, these additively manufactured tools are most appropriate for prototype tooling where the low cost (<$45) and quick turnaround make them attractive when compared to a machined tool.

  10. Influences and interactions of inundation, peat, and snow on active layer thickness: Modeling Archive

    DOE Data Explorer

    Scott Painter; Ethan Coon; Cathy Wilson; Dylan Harp; Adam Atchley

    2016-04-21

    This Modeling Archive is in support of an NGEE Arctic publication currently in review [4/2016]. The Advanced Terrestrial Simulator (ATS) was used to simulate thermal hydrological conditions across varied environmental conditions for an ensemble of 1D models of Arctic permafrost. The thickness of organic soil is varied from 2 to 40cm, snow depth is varied from approximately 0 to 1.2 meters, water table depth was varied from -51cm below the soil surface to 31 cm above the soil surface. A total of 15,960 ensemble members are included. Data produced includes the third and fourth simulation year: active layer thickness, time of deepest thaw depth, temperature of the unfrozen soil, and unfrozen liquid saturation, for each ensemble member. Input files used to run the ensemble are also included.

  11. Highly accurate thickness measurement of multi-layered automotive paints using terahertz technology

    NASA Astrophysics Data System (ADS)

    Krimi, Soufiene; Klier, Jens; Jonuscheit, Joachim; von Freymann, Georg; Urbansky, Ralph; Beigang, René

    2016-07-01

    In this contribution, we present a highly accurate approach for thickness measurements of multi-layered automotive paints using terahertz time domain spectroscopy in reflection geometry. The proposed method combines the benefits of a model-based material parameters extraction method to calibrate the paint coatings, a generalized Rouard's method to simulate the terahertz radiation behavior within arbitrary thin films, and the robustness of a powerful evolutionary optimization algorithm to increase the sensitivity of the minimum thickness measurement limit. Within the framework of this work, a self-calibration model is introduced, which takes into consideration the real industrial challenges such as the effect of wet-on-wet spray in the painting process.

  12. Atmospheric pressure spatial atomic layer deposition web coating with in situ monitoring of film thickness

    SciTech Connect

    Yersak, Alexander S.; Lee, Yung C.; Spencer, Joseph A.; Groner, Markus D.

    2014-01-15

    Spectral reflectometry was implemented as a method for in situ thickness monitoring in a spatial atomic layer deposition (ALD) system. Al{sub 2}O{sub 3} films were grown on a moving polymer web substrate at 100 °C using an atmospheric pressure ALD web coating system, with film growth of 0.11–0.13 nm/cycle. The modular coating head design and the in situ monitoring allowed for the characterization and optimization of the trimethylaluminum and water precursor exposures, purge flows, and web speed. A thickness uniformity of ±2% was achieved across the web. ALD cycle times as low as 76 ms were demonstrated with a web speed of 1 m/s and a vertical gap height of 0.5 mm. This atmospheric pressure ALD system with in situ process control demonstrates the feasibility of low-cost, high throughput roll-to-roll ALD.

  13. Thickness Effect of Al-Doped ZnO Window Layer on Damp Heat Stability of CuInGaSe2 Solar Cells: Preprint

    SciTech Connect

    Pern, F. J.; Mansfield, L.; DeHart, C.; Glick, S. H.; Yan, F.; Noufi, R.

    2011-07-01

    We investigated the damp heat (DH) stability of CuInGaSe2 (CIGS) solar cells as a function of thickness of the Al-doped ZnO (AZO) window layer from the 'standard' 0.12 μm to a modest 0.50 μm over an underlying 0.10-μm intrinsic ZnO buffer layer. The CIGS cells were prepared with external electrical contact using fine Au wire to the tiny 'standard' Ni/Al (0.05 μm/3 μm) metal grid contact pads. Bare cell coupons and sample sets encapsulated in a specially designed, Al-frame test structure with an opening for moisture ingress control using a TPT backsheet were exposed to DH at 85oC and 85% relative humidity, and characterized by current-voltage (I-V), quantum efficiency (QE), and (electrochemical) impedance spectroscopy (ECIS). The results show that bare cells exhibited rapid degradation within 50-100 h, accompanied by film wrinkling and delamination and corrosion of Mo and AlNi grid, regardless of AZO thickness. In contrast, the encapsulated cells did not show film wrinkling, delamination, and Mo corrosion after 168 h DH exposure; but the trend of efficiency degradation rate showed a weak correlation to the AZO thickness.

  14. Long wavelength emitting GaInN quantum wells on metamorphic GaInN buffer layers with enlarged in-plane lattice parameter

    SciTech Connect

    Däubler, J. Passow, T.; Aidam, R.; Köhler, K.; Kirste, L.; Kunzer, M.; Wagner, J.

    2014-09-15

    Metamorphic (i.e., linear composition graded) GaInN buffer layers with an increased in-plane lattice parameter, grown by plasma-assisted molecular beam epitaxy, were used as templates for metal organic vapor phase epitaxy (MOVPE) grown GaInN/GaInN quantum wells (QWs), emitting in the green to red spectral region. A composition pulling effect was observed allowing considerable higher growth temperatures for the QWs for a given In composition. The internal quantum efficiency (IQE) of the QWs was determined by temperature and excitation power density dependent photoluminescence (PL) spectroscopy. An increase in IQE by a factor of two was found for green emitting QWs grown on metamorphic GaInN buffer compared to reference samples grown on standard GaN buffer layers. The ratio of room temperature to low temperature intensity PL of the red emitting QWs were found to be comparable to the PL efficiency of green emitting QWs, both grown on metamorphic GaInN buffers. The excitation density and well width dependence of the IQE indicate a reduction of the quantum confined Stark effect upon growth on GaInN buffer layers with increased in-plane lattice parameter.

  15. Dependence of spin-pumping spin Hall effect measurements on layer thicknesses and stacking order

    NASA Astrophysics Data System (ADS)

    Vlaminck, V.; Pearson, J. E.; Bader, S. D.; Hoffmann, A.

    2013-08-01

    Voltages generated from inverse spin Hall and anisotropic magnetoresistance effects via spin pumping in ferromagnetic (F)/nonmagnetic (N) bilayers are investigated by means of a broadband ferromagnetic resonance approach. Varying the nonmagnetic layer thickness enables the determination of the spin diffusion length in Pd of 5.5 ± 0.5 nm. We also observe a systematic change of the voltage line shape when reversing the stacking order of the F/N bilayer, which is qualitatively consistent with expectations from spin Hall effects. However, even after independent calibration of the precession angle, systematic quantitative discrepancies in analyzing the data with spin Hall effects remain.

  16. Measured Propagation Characteristics of Finite Ground Coplanar Waveguide on Silicon with a Thick Polyimide Interface Layer

    NASA Technical Reports Server (NTRS)

    Ponchak, George E.; Papapolymerou, John; Tentzeris, Emmanouil M.; Williams, W. O. (Technical Monitor)

    2002-01-01

    Measured propagation characteristics of Finite Ground Coplanar (FGC) waveguide on silicon substrates with resistivities spanning 3 orders of magnitude (0.1 to 15.5 Ohm cm) and a 20 micron thick polyimide interface layer is presented as a function of the FGC geometry. Results show that there is an optimum FGC geometry for minimum loss, and silicon with a resistivity of 0.1 Ohm cm has greater loss than substrates with higher and lower resistivity. Lastly, substrates with a resistivity of 10 Ohm cm or greater have acceptable loss.

  17. The application of thick hydrogenated amorphous silicon layers to charged particle and x-ray detection

    SciTech Connect

    Perez-Mendez, V.; Cho, G.; Fujieda, I.; Kaplan, S.N.; Qureshi, S.; Street, R.A.

    1989-04-01

    We outline the characteristics of thick hydrogenated amorphous silicon layers which are optimized for the detection of charged particles, x-rays and ..gamma..-rays. Signal amplitude as a function of the linear energy transfer of various particles are given. Noise sources generated by the detector material and by the thin film electronics - a-Si:H or polysilicon proposed for pixel position sensitive detectors readout are described, and their relative amplitudes are calculated. Temperature and neutron radiation effects on leakage currents and the corresponding noise changes are presented. 17 refs., 12 figs., 2 tabs.

  18. Thickness dependence of the levitation performance of double-layer high-temperature superconductor bulks above a magnetic rail

    NASA Astrophysics Data System (ADS)

    Sun, R. X.; Zheng, J.; Liao, X. L.; Che, T.; Gou, Y. F.; He, D. B.; Deng, Z. G.

    2014-10-01

    A double-layer high-temperature superconductor (HTSC) arrangement was proposed and proved to be able to bring improvements to both levitation force and guidance force compared with present single-layer HTSC arrangement. To fully exploit the applied magnetic field by a magnetic rail, the thickness dependence of a double-layer HTSC arrangement on the levitation performance was further investigated in the paper. In this study, the lower-layer bulk was polished step by step to different thicknesses, and the upper-layer bulk with constant thickness was directly superimposed on the lower-layer one. The levitation force and the force relaxation of the double-layer HTSC arrangement were measured above a Halbach magnetic rail. Experimental result shows that a bigger levitation force and a less levitation force decay could be achieved by optimizing the thickness of the lower-layer bulk HTSC. This thickness optimization method could be applied together with former reported double-layer HTSC arrangement method with aligned growth sector boundaries pattern. This series of study on the optimized combination method do bring a significant improvement on the levitation performance of present HTS maglev systems.

  19. Changes in cortical thickness in the frontal lobes in schizophrenia are a result of thinning of pyramidal cell layers.

    PubMed

    Williams, M R; Chaudhry, R; Perera, S; Pearce, R K B; Hirsch, S R; Ansorge, O; Thom, M; Maier, M

    2013-02-01

    Decreased cortical thickness and reduced activity as measured by fMRI in the grey matter of the subgenual cingulate cortex have been reported in schizophrenia and bipolar disorder, and cortical grey matter loss has been reliably reported in the frontal and temporal lobes in schizophrenia. The aim of this study was to examine the thickness of each of the six cortical layers in the subgenual cingulate cortex, five frontal lobe and four temporal lobe gyri. We examined two separate cohorts. Cohort 1 examines the subgenual cingulate cortex (SCC) in schizophrenia (n = 10), bipolar disorder (n = 15) and major depressive disorder (n = 20) against control subjects (n = 19). Cohort two examines frontal and temporal gyri in schizophrenia (n = 16), major depressive disorder (n = 6) against matched controls (n = 32). The cohorts were selected with identical clinical criteria, but underwent different tissue processing to contrast the effect of chemical treatment on tissue shrinkage. Measurements of layer I-VI thickness were taken from cresyl-violet- and haematoxylin-stained sections in cohort one and from cresyl-violet- and H&E-stained sections in cohort two. SCC cortical thickness decreased in male subjects with bipolar disorder (p = 0.048), and male schizophrenia cases showed a specific decrease in the absolute thickness of layer V (p = 0.003). Compared to controls, the relative thickness of layer V in the crown of the SCC decreased in schizophrenia (p < 0.001). A significant decrease in total cortical thickness was observed across the frontal lobe in schizophrenia (p < 0.0001), with specific pyramidal layer thinning in layers III (p = 0.0001) and V (p = 0.005). There was no effect of lateralization. No changes were noted in temporal lobe cortical thickness. This study demonstrates diminished pyramidal layer thickness resulting in decreased frontal lobe thickness in schizophrenia.

  20. Anatomy and physiology of the thick-tufted layer 5 pyramidal neuron

    PubMed Central

    Ramaswamy, Srikanth; Markram, Henry

    2015-01-01

    The thick-tufted layer 5 (TTL5) pyramidal neuron is one of the most extensively studied neuron types in the mammalian neocortex and has become a benchmark for understanding information processing in excitatory neurons. By virtue of having the widest local axonal and dendritic arborization, the TTL5 neuron encompasses various local neocortical neurons and thereby defines the dimensions of neocortical microcircuitry. The TTL5 neuron integrates input across all neocortical layers and is the principal output pathway funneling information flow to subcortical structures. Several studies over the past decades have investigated the anatomy, physiology, synaptology, and pathophysiology of the TTL5 neuron. This review summarizes key discoveries and identifies potential avenues of research to facilitate an integrated and unifying understanding on the role of a central neuron in the neocortex. PMID:26167146

  1. Realizing the full potential of Remotely Sensed Active Layer Thickness (ReSALT) Products

    NASA Astrophysics Data System (ADS)

    Schaefer, K. M.; Chen, A.; Liu, L.; Parsekian, A.; Jafarov, E. E.; Panda, S. K.; Zebker, H. A.

    2015-12-01

    The Remotely Sensed Active Layer Thickness (ReSALT) product uses the Interferometric Synthetic Aperture Radar (InSAR) technique to measure ground subsidence, active layer thickness (ALT), and thermokarst activity in permafrost regions. ReSALT supports research for the Arctic-Boreal Vulnerability Experiment (ABoVE) field campaign in Alaska and northwest Canada and is a precursor for a potential Nasa-Isro Synthetic Aperture Radar (NISAR) product. ALT is a critical parameter for monitoring the status of permafrost and thermokarst activity is one of the key drivers of change in permafrost regions. The ReSALT product currently includes 1) long-term subsidence trends resulting from the melting and subsequent drainage of excess ground ice in permafrost-affected soils, 2) seasonal subsidence resulting from the expansion of soil water into ice as the active layer freezes and thaws, and 3) ALT estimated from the seasonal subsidence assuming a vertical profile of water within the soil column. ReSALT includes uncertainties for all parameters and is validated against in situ measurements from the Circumpolar Active Layer Monitoring (CALM) network, Ground Penetrating Radar and mechanical probe measurements. We present high resolution ReSALT products on the North Slope of Alaska: Prudhoe Bay, Barrow, Toolik Lake, Happy Valley, and the Anaktuvuk fire zone. We believe that the ReSALT product could be expanded to include maps of individual thermokarst features identified as spatial anomalies in the subsidence trends, with quantified expansion rates. We illustrate the technique with multiple examples of thermokarst features on the North Slope of Alaska. Knowing the locations and expansion rates for individual features allows us to evaluate risks to human infrastructure. Our results highlight the untapped potential of the InSAR technique to remotely sense ALT and thermokarst dynamics over large areas of the Arctic.

  2. Comparison of ZnO thin films grown on a polycrystalline 3C-SiC buffer layer by RF magnetron sputtering and a sol-gel method

    NASA Astrophysics Data System (ADS)

    Phan, Duy-Thach; Chung, Gwiy-Sang

    2011-02-01

    Zinc oxide (ZnO) thin films were deposited on a polycrystalline (poly) 3C-SiC buffer layer using RF magnetron sputtering and a sol-gel method. The post-deposition annealing was performed on ZnO thin films prepared using both methods. The formation of ZnO piezoelectric thin films with less residual stress was due to a close lattice mismatch of the ZnO and SiC layers as obtained by the sputtering method. Nanocrystalline, porous ZnO film prepared using the sol-gel method showed strong ultraviolet UV emission at a wavelength of 380 nm. The 3C-SiC buffer layer improved the optical and piezoelectric properties of the ZnO film produced by the two deposition methods. Moreover, the different structures of the ZnO films on the 3C-SiC intermediate layer caused by the different deposition techniques were also considered and discussed.

  3. Numerical simulations of Richtmyer{endash}Meshkov instabilities in finite-thickness fluid layers

    SciTech Connect

    Mikaelian, K.O.

    1996-05-01

    Direct numerical simulations of Richtmyer{endash}Meshkov instabilities in shocked fluid layers are reported and compared with analytic theory. To investigate new phenomena such as freeze-out, interface coupling, and feedthrough, several new configurations are simulated on a two-dimensional hydrocode. The basic system is an {ital A}/{ital B}/{ital A} combination, where {ital A} is air and {ital B} is a finite-thickness layer of freon, SF{sub 6}, or helium. The middle layer {ital B} has perturbations either on its upstream or downstream side, or on both sides, in which case the perturbations may be in phase (sinuous) or out of phase (varicose). The evolution of such perturbations under a Mach 1.5 shock is calculated, including the effect of a reshock. Recently reported gas curtain experiments [J. M. Budzinski {ital et} {ital al}., Phys. Fluids {bold 6}, 3510 (1994)] are also simulated and the code results are found to agree very well with the experiments. A new gas curtain configuration is also considered, involving an initially sinuous SF{sub 6} or helium layer and a new pattern, opposite mushrooms, is predicted to emerge. Upon reshock a relatively simple sinuous gas curtain is found to evolve into a highly complex pattern of nested mushrooms. {copyright} {ital 1996 American Institute of Physics.}

  4. The effects of ultraviolet-ozone-treated ultra-thin MnO-doped ZnO film as anode buffer layer on the electrical characteristics of organic light-emitting diodes

    NASA Astrophysics Data System (ADS)

    Lu, Hsin-Wei; Kao, Po-Ching; Juang, Yung-Der; Chu, Sheng-Yuan

    2015-11-01

    In this study, the efficiency of organic light-emitting diodes (OLEDs) was enhanced by depositing an MnO-doped ZnO film as a buffer layer between the indium tin oxide (ITO) electrode and the α-naphthylphenylbiphenyldiamine hole transport layer. The enhancement mechanism was systematically investigated, and the X-ray photoelectron spectroscopy and ultraviolet photoelectron spectroscopy results revealed the formation of the UV-ozone-treated MnO-doped ZnO film. With this film, the work function increased from 4.8 eV (standard ITO electrode (˜ 10 ±5 Ω/◻ )) to 5.27 eV (UV-ozone-treated MnO-doped ZnO deposited on the ITO electrode with 1 wt. % for 1 nm), while the surface roughness of the UV-ozone-treated MnO-doped ZnO film was smoother than that of the ITO electrode. The deposited UV-ozone-treated MnO-doped ZnO film increased the surface energy and polarity of the ITO surface, as determined from contact angle measurements. Further, results from admittance spectroscopy showed that the inserted UV-ozone-treated MnO-doped ZnO film increased the capacitance and conductance of the OLEDs. It was also found that the carrier injection increased in the space-charge region when the UV-ozone-treated MnO-doped ZnO buffer layer was inserted. Moreover, the turn-on voltage of the devices decreased from 3.8 V to 3.2 V, the luminance increased from 7588 cd/m2 to 20 350 cd/m2, and the current efficiency increased from 3.2 cd/A to 5.8 cd/A when a 1 nm-thick UV-ozone-treated MnO-doped ZnO film with 1 wt. % was inserted as a buffer layer in the OLEDs.

  5. High-power SiC MESFET using a dual p-buffer layer for an S-band power amplifier

    NASA Astrophysics Data System (ADS)

    Deng, Xiao-Chuan; Sun, He; Rao, Cheng-Yuan; Zhang, Bo

    2013-01-01

    A silicon carbide (SiC) based metal semiconductor field effect transistor (MESFET) is fabricated by using a standard SiC MESFET structure with the application of a dual p-buffer layer and a multi-recessed gate to the process for an S-band power amplifier. The lower doped upper-buffer layer serves to maintain the channel current, while the higher doped lower-buffer layer is used to provide excellent electron confinement in the channel layer. A 20-mm gate periphery SiC MESFET biased at a drain voltage of 85 V demonstrates a pulsed wave saturated output power of 94 W, a linear gain of 11.7 dB, and a maximum power added efficiency of 24.3% at 3.4 GHz. These results are improved compared with those of the conventional single p-buffer MESFET fabricated in this work using the same process. A radio-frequency power output greater than 4.7 W/mm is achieved, showing the potential as a high-voltage operation device for high-power solid-state amplifier applications.

  6. Impact of CoFe buffer layers on the structural and electronic properties of the Co2MnSi/MgO interface

    NASA Astrophysics Data System (ADS)

    Fetzer, Roman; Liu, Hong-xi; Stadtmüller, Benjamin; Uemura, Tetsuya; Yamamoto, Masafumi; Aeschlimann, Martin; Cinchetti, Mirko

    2016-05-01

    The latest improvement of MgO-based magnetic tunnel junctions has been achieved by the combination of CoFe buffer layers and potentially half-metallic ultrathin Co2MnSi electrodes. By this, tunnel magnetoresistance ratios of almost 2000% could be obtained. However, a complete understanding of the underlying processes leading to this enhancement is not yet given. We present a comprehensive study regarding the structural and electronic spin properties of the CoFe(30 nm)-buffered Co2MnSi(3 nm)/MgO(2 nm) buried interface identical to the one formed in actual devices. Low energy electron diffraction experiments show that the ultrathin Co2MnSi layer adopts the lattice constant of the underlying CoFe buffer layer, leading to improved structural conditions at the interface to MgO. In contrast, the Co2MnSi/MgO interface spin polarization at the Fermi level is not affected by the magnetic CoFe buffer layer, as found by interface-sensitive spin-resolved extremely low energy photoemission spectroscopy.

  7. Coupled annealing temperature and layer thickness effect on strengthening mechanisms of Ti/Ni multilayer thin films

    NASA Astrophysics Data System (ADS)

    Yang, Zhou; Wang, Junlan

    2016-03-01

    A systematic study was performed on mechanical and microstructural properties of Ti/Ni multilayers with layer thickness from 200 nm to 6 nm and annealing temperature from room temperature to 500 °C. Based on the observed hardness evolution, a coupled layer-thickness and annealing-temperature dependent strengthening mechanism map is proposed. For as-deposited films, the deformation behavior follows the traditional trend of dislocation mediated strengthening to grain boundary mediated softening with decreasing layer thickness. For annealed films, grain boundary relaxation is considered to be the initial strengthening mechanism with higher activation temperature required for thicker layers. Under further annealing, solid solution hardening, intermetallic precipitation hardening, and fully intermixed alloy structure continue to strengthen the thin layered films, while recrystallization and grain-growth lead to the eventual softening of thick layered films. For the films with intermediate layer thickness, a strong orientation dependent hardness behavior is exhibited under high temperature annealing due to mechanism switch from grain growth softening to intermetallic precipitation hardening when changing the loading orientation from perpendicular to parallel to the layer interfaces.

  8. Strain relaxation of thick (11–22) semipolar InGaN layer for long wavelength nitride-based device

    SciTech Connect

    Kim, Jaehwan; Min, Daehong; Jang, Jongjin; Lee, Kyuseung; Chae, Sooryong; Nam, Okhyun

    2014-10-28

    In this study, the properties of thick stress-relaxed (11–22) semipolar InGaN layers were investigated. Owing to the inclination of growth orientation, misfit dislocations (MDs) occurred at the heterointerface when the strain state of the (11–22) semipolar InGaN layers reached the critical point. We found that unlike InGaN layers based on polar and nonpolar growth orientations, the surface morphologies of the stress-relaxed (11–22) semipolar InGaN layers did not differ from each other and were similar to the morphology of the underlying GaN layer. In addition, misfit strain across the whole InGaN layer was gradually relaxed by MD formation at the heterointerface. To minimize the effect of surface roughness and defects in GaN layers on the InGaN layer, we conducted further investigation on a thick (11–22) semipolar InGaN layer grown on an epitaxial lateral overgrown GaN template. We found that the lateral indium composition across the whole stress-relaxed InGaN layer was almost uniform. Therefore, thick stress-relaxed (11–22) semipolar InGaN layers are suitable candidates for use as underlying layers in long-wavelength devices, as they can be used to control strain accumulation in the heterostructure active region without additional influence of surface roughness.

  9. Imaging spectroscopy with Ta/Al DROIDs: Performance for different Al trapping layer thicknesses

    NASA Astrophysics Data System (ADS)

    Hijmering, R. A.; Verhoeve, P.; Martin, D. D. E.; Peacock, A.; Kozorezov, A. G.

    2006-04-01

    To overcome the limited field of view, which can be achieved with single superconducting tunneling junction (STJ) arrays, distributed read-out imaging devices (DROIDs) are being developed. DROIDs consist of a superconducting absorber strip with proximized STJs on either end. The ratio of the two signals from the STJs provides information on the absorption position, and the sum signal is a measure for the energy of the absorbed photon. In our devices, the absorber is an epitaxial Ta strip that extends underneath the Ta/Al read-out STJs. Thus, the bottom electrode of the STJs is an integral part of the absorber. Due to the proximity effect, the STJs have a lower energy gap than the absorber, causing trapping of quasiparticles (QPs) in the STJs. The trapping will change with thicker Al layers because the energy gap of the devices will decrease. A series of 50×200 μm 2 and 20×200 μm 2 absorbers (including 50×50 μm 2 STJs) and different Al trapping layer thicknesses, ranging from 65 to 130 nm, have been tested. The devices have been illuminated with 6 keV 55Fe photons. The position resolution is found to improve with increasing Al thickness. It is found that the current model needs to be adapted for DROIDs to account for different injection of QPs into the STJ and extra losses to the absorber.

  10. Effect of optic nerve sheath fenestration for idiopathic intracranial hypertension on retinal nerve fiber layer thickness.

    PubMed

    Starks, Victoria; Gilliland, Grant; Vrcek, Ivan; Gilliland, Connor

    2016-01-01

    The objective of the study was to evaluate whether optic nerve sheath fenestration in patients with idiopathic intracranial hypertension was associated with improvement in visual field pattern deviation and optical coherence tomography retinal nerve fiber layer thickness.The records of 13 eyes of 11 patients who underwent optic nerve sheath fenestration were reviewed. The subjects were patients of a clinical practice in Dallas, Texas. Charts were reviewed for pre- and postoperative visual field pattern deviation (PD) and retinal nerve fiber layer thickness (RNFL).PD and RNFL significantly improved after surgery. Average PD preoperatively was 8.51 DB and postoperatively was 4.80 DB (p = 0.0002). Average RNFL preoperatively was 113.63 and postoperatively was 102.70 (p = 0.01). The preoperative PD and RNFL did not correlate strongly.Our results demonstrate that PD and RNFL are improved after optic nerve sheath fenestration. The pre- and postoperative RNFL values were compared to the average RNFL value of healthy optic nerves obtained from the literature. Post-ONSF RNFL values were significantly closer to the normal value than preoperative. RNFL is an objective parameter for monitoring the optic nerve after optic nerve sheath fenestration. This study adds to the evidence that OCT RNFL may be an effective monitoring tool for patients with IIH and that it continues to be a useful parameter after ONSF.

  11. Moderately large vibrations of doubly curved shallow open shells composed of thick layers

    NASA Astrophysics Data System (ADS)

    Adam, Christoph

    2007-02-01

    This paper addresses nonlinear flexural vibrations of shallow shells composed of three thick layers with different shear flexibility, which are symmetrically arranged with respect to the middle surface. The considered shell structures of polygonal planform are hard hinged simply supported (i.e. all in-plane rotations and the bending moment vanish) with the edges fully restraint against displacements in any direction. The kinematic field equations are formulated by layerwise application of a first-order shear deformation theory. A modification of Berger's theory is employed to model the nonlinear characteristics of the structural response. The continuity of the transverse shear stress across the interfaces is specified according to Hooke's law, and subsequently the equations of motion of this higher order problem can be derived in analogy to a homogeneous single-layer shear deformable shallow shell. Numerical results of rectangular shallow shells in nonlinear steady-state vibration are presented for various ratios of shell rise to thickness, and non-dimensional load amplitude.

  12. Area-Selective Atomic Layer Deposition: Conformal Coating, Subnanometer Thickness Control, and Smart Positioning.

    PubMed

    Fang, Ming; Ho, Johnny C

    2015-09-22

    Transistors have already been made three-dimensional (3D), with device channels (i.e., fins in trigate field-effect transistor (FinFET) technology) that are taller, thinner, and closer together in order to enhance device performance and lower active power consumption. As device scaling continues, these transistors will require more advanced, fabrication-enabling technologies for the conformal deposition of high-κ dielectric layers on their 3D channels with accurate position alignment and thickness control down to the subnanometer scale. Among many competing techniques, area-selective atomic layer deposition (AS-ALD) is a promising method that is well suited to the requirements without the use of complicated, complementary metal-oxide semiconductor (CMOS)-incompatible processes. However, further progress is limited by poor area selectivity for thicker films formed via a higher number of ALD cycles as well as the prolonged processing time. In this issue of ACS Nano, Professor Stacy Bent and her research group demonstrate a straightforward self-correcting ALD approach, combining selective deposition with a postprocess mild chemical etching, which enables selective deposition of dielectric films with thicknesses and processing times at least 10 times larger and 48 times shorter, respectively, than those obtained by conventional AS-ALD processes. These advances present an important technological breakthrough that may drive the AS-ALD technique a step closer toward industrial applications in electronics, catalysis, and photonics, etc. where more efficient device fabrication processes are needed. PMID:26351731

  13. Reliability of thickness of oxide layer of stainless steels with chromium using cellular automaton model

    SciTech Connect

    Lan, K. C.; Chen, Y.; Yu, G. P.; Hung, T. C.

    2012-07-01

    A cellular automaton (CA) model based on the stochastic approach was proposed to simulate the process of oxidation and corrosion of stainless steels with different contents of chromium in-flowing lead bismuth eutectic (LBE). Chromium is a crucial alloying element added in stainless steels and nickel based alloys which have been proposed to be used in advanced nuclear reactors to improve resistance of the oxidation and corrosion. To verify the reliability of the thickness of the oxide layer by CA model, the influence of the stochastic character on the simulating results was investigated as changing parameter of chromium content of structure material in this study. Ten independent simulations were run for each specific environment. A stable and reasonable results were obtained according to the chi-square of goodness-of-fit test, the chi-square of the thickness of oxide layer for each case were significant smaller than critical chi-square value with a confidence level of 95% ({Chi}{sup 2}{alpha}, v = {Chi}{sup 2} 0.05,9 = 16.92). (authors)

  14. Sodium chloride crystallization from thin liquid sheets, thick layers, and sessile drops in microgravity

    NASA Astrophysics Data System (ADS)

    Fontana, Pietro; Pettit, Donald; Cristoforetti, Samantha

    2015-10-01

    Crystallization from aqueous sodium chloride solutions as thin liquid sheets, 0.2-0.7 mm thick, with two free surfaces supported by a wire frame, thick liquid layers, 4-6 mm thick, with two free surfaces supported by metal frame, and hemispherical sessile drops, 20-32 mm diameter, supported by a flat polycarbonate surface or an initially flat gelatin film, were carried out under microgravity on the International Space Station (ISS). Different crystal morphologies resulted based on the fluid geometry: tabular hoppers, hopper cubes, circular [111]-oriented crystals, and dendrites. The addition of polyethylene glycol (PEG-3350) inhibited the hopper growth resulting in flat-faced surfaces. In sessile drops, 1-4 mm tabular hopper crystals formed on the free surface and moved to the fixed contact line at the support (polycarbonate or gelatin) self-assembling into a shell. Ring formation created by sessile drop evaporation to dryness was observed but with crystals 100 times larger than particles in terrestrially formed coffee rings. No hopper pyramids formed. By choosing solution geometries offered by microgravity, we found it was possible to selectively grow crystals of preferred morphologies.

  15. Nanometer-resolution electron microscopy through micrometers-thick water layers

    PubMed Central

    de Jonge, Niels; Poirier-Demers, Nicolas; Demers, Hendrix; Peckys, Diana B.; Drouin, Dominique

    2010-01-01

    Scanning transmission electron microscopy (STEM) was used to image gold nanoparticles on top of and below saline water layers of several micrometers thickness. The smallest gold nanoparticles studied had diameters of 1.4 nm and were visible for a liquid thickness of up to 3.3 µm. The imaging of gold nanoparticles below several micrometers of liquid was limited by broadening of the electron probe caused by scattering of the electron beam in the liquid. The experimental data corresponded to analytical models of the resolution and of the electron probe broadening, as function of the liquid thickness. The results were also compared with Monte Carlo simulations of the STEM imaging on modeled specimens of similar geometry and composition as used for the experiments. Applications of STEM imaging in liquid can be found in cell biology, e.g., to study tagged proteins in whole eukaryotic cells in liquid, and in materials science to study the interaction of solid:liquid interfaces at the nanoscale. PMID:20542380

  16. Enhancement in Magnetoelectric Effects at Thickness Modes of Layered Ferromagnets and Ferroelectrics

    NASA Astrophysics Data System (ADS)

    Filippov, D. A.; Bichurin, M. I.; Petrov, V. M.; Laletsin, V. M.; Srinivasan, G.; Nan, C. W.

    2006-03-01

    Magnetoelectric (ME) effects in magnetic - piezoelectric heterostructures are caused by mechanical coupling between magnetic and piezoelectric layers. We reported earlier on the theory and observation of a resonant enhancement in the ME effects when the electrical subsystem is driven to resonance, i.e., electromechanical resonance (EMR) associated with radial acoustic modes [1]. Here we discuss the theory and data for ME effects associated with thickness EMR modes. Profiles of ME voltage coefficients versus frequency were estimated for trilayers based lead zirconate titanate and the following ferromagnetic phases: cobalt ferrite, nickel ferrite and lithium ferrite and Fe, Co and Ni. The results are compared with data on samples 10 mm in diameter and 2 mm in thickness. An enhacement in the ME voltage due to radial modes is observed at 350 kHz. A similar behavior due to the thickness mode is observed at 1.5-2 MHz, in agreement with the theory. Calculated ME voltage coefficients versus frequency profiles are in excellent agreement with data. - supported by an NSF grant. [1] D. A. Filippov, M. I. Bichurin, V. M. Petrov, V. M. Laletin, G. Srinivasan, Phys. Solid State 46, 1674, (2004).

  17. Interplay of solvent additive concentration and active layer thickness on the performance of small molecule solar cells.

    PubMed

    Love, John A; Collins, Samuel D; Nagao, Ikuhiro; Mukherjee, Subhrangsu; Ade, Harald; Bazan, Guillermo C; Nguyen, Thuc-Quyen

    2014-11-19

    A relationship between solvent additive concentration and active layer thickness in small-molecule solar cells is investigated. Specifically, the additive concentration must scale with the amount of semiconductor material and not as absolute concentration in solution. Devices with a wide range of active layers with thickness up to 200 nm can readily achieve efficiencies close to 6% when the right concentration of additive is used.

  18. Anisotropic structural and optical properties of semi-polar (11-22) GaN grown on m-plane sapphire using double AlN buffer layers.

    PubMed

    Zhao, Guijuan; Wang, Lianshan; Yang, Shaoyan; Li, Huijie; Wei, Hongyuan; Han, Dongyue; Wang, Zhanguo

    2016-02-10

    We report the anisotropic structural and optical properties of semi-polar (11-22) GaN grown on m-plane sapphire using a three-step growth method which consisted of a low temperature AlN buffer layer, followed by a high temperature AlN buffer layer and GaN growth. By introducing double AlN buffer layers, we substantially improve the crystal and optical qualities of semi-polar (11-22) GaN, and significantly reduce the density of stacking faults and dislocations. The high resolution x-ray diffraction measurement revealed that the in-plane anisotropic structural characteristics of GaN layer are azimuthal dependent. Transmission electron microscopy analysis showed that the majority of dislocations in the GaN epitaxial layer grown on m-sapphire are the mixed-type and the orientation of GaN layer was rotated 58.4° against the substrate. The room temperature photoluminescence (PL) spectra showed the PL intensity and wavelength have polarization dependence along parallel and perpendicular to the [1-100] axis (polarization degrees ~ 0.63). The realization of a high polarization semi-polar GaN would be useful to achieve III-nitride based lighting emission device for displays and backlighting.

  19. Anisotropic structural and optical properties of semi-polar (11–22) GaN grown on m-plane sapphire using double AlN buffer layers

    PubMed Central

    Zhao, Guijuan; Wang, Lianshan; Yang, Shaoyan; Li, Huijie; Wei, Hongyuan; Han, Dongyue; Wang, Zhanguo

    2016-01-01

    We report the anisotropic structural and optical properties of semi-polar (11–22) GaN grown on m-plane sapphire using a three-step growth method which consisted of a low temperature AlN buffer layer, followed by a high temperature AlN buffer layer and GaN growth. By introducing double AlN buffer layers, we substantially improve the crystal and optical qualities of semi-polar (11–22) GaN, and significantly reduce the density of stacking faults and dislocations. The high resolution x-ray diffraction measurement revealed that the in-plane anisotropic structural characteristics of GaN layer are azimuthal dependent. Transmission electron microscopy analysis showed that the majority of dislocations in the GaN epitaxial layer grown on m-sapphire are the mixed-type and the orientation of GaN layer was rotated 58.4° against the substrate. The room temperature photoluminescence (PL) spectra showed the PL intensity and wavelength have polarization dependence along parallel and perpendicular to the [1–100] axis (polarization degrees ~ 0.63). The realization of a high polarization semi-polar GaN would be useful to achieve III-nitride based lighting emission device for displays and backlighting. PMID:26861595

  20. Interpretation of Isopycnal Layer Thickness Advection in Terms of Eddy-Topography Interaction

    NASA Astrophysics Data System (ADS)

    Liu, Chuanyu; Koehl, Armin; Stammer, Detlef

    2013-04-01

    Spatially varying amplitude of the eddy isopycnal layer thickness diffusivity Kgm and the layer thickness advection Kgmskew of the modified Gent and McWilliams parameterization are estimated using two different approaches: the adjoint estimation from a global data assimilation system and the inversion calculation according to divergent buoyancy eddy flux-mean buoyancy gradient relation using results from idealized eddy resolving numerical models with various bottom topographies. This work focuses on the properties of Kgmskew. From the adjoint estimation, large Kgmskew values are found along meandering currents and predominantly positive (negative) over the deep ocean and negative (positive) over seamounts in the southern (northern) hemisphere, implying close relation to the 'Neptune effect" parameterization by Holloway in which the eddy induced mean velocity stream function is represented by -fHL, where H is the bottom depth, f the Coriolis parameter and L a length scale. In the inversion calculation, divergent buoyancy eddy fluxes are obtained by removing the rotational components from the total buoyancy eddy fluxes through Helmholtz-Hodge decomposition. Though subject to topographic length scale, the inversed Kgmskew reveals characteristics of both f and H, and interactions with the mean current, inter-confirming the adjoint estimation results. Applying this parameterization for Kgmskew in the general circulation model produces cold domes and anti-cyclonic circulations over seamounts, which reduces common model biases there. By construction, the original thickness advection Kgmskew redistributes potential energy and the original "Neptune effect" parameterization improves potential vorticity conservation, applying the latter into the former as suggested in the present study thus more correctly reproduces the potential vorticity structure over a sloping topography while conserving the total potential energy.

  1. Magnetic properties of nano-patterned GaMnAs films grown on ZnCdSe buffer layers

    NASA Astrophysics Data System (ADS)

    Dong, Sining; Li, Xiang; Kanzyuba, Vasily; Yoo, Taehee; Liu, Xinyu; Dobrowolska, Malgorzata; Furdyna, Jacek

    Magnetic semiconductor nanostructures are attracting intense attention, both because of their fundamental physical properties, and because of the promise which they hold for building smaller, faster and more energy-efficient devices. In this study we report successful MBE growth of GaMnAs films on the GaAs (100) substrates with ZnCdSe buffer layers, which results in perpendicular magnetic easy axis in the GaMnAs films. The GaMnAs/ZnCdSe films have been etched into nano-stripe shapes with various widths below 200nm by e-beam lithography, which resulted in a new geometry of interest for perpendicular magnetic recording. Magnetic anisotropy of as-grown GaMnAs films and nano-stripes was then studied by SQUID magnetometry. The results indicate that the GaMnAs films consist of magnetic domains with magnetization normal to the film plane, having rather high coercivety, which survives after nanofabrication. This is also confirmed by the dynamics of the domain motion as shown by AC susceptibility measurements. These findings are of interest for understanding the magnetic anisotropy mechanisms in GaMnAs and its domain structures, as well as for designing of nano-sized spintronic devices which require hard ferromagnetic behavior with perpendicular easy axes. This work was supported by the National Science Foundation Grant DMR1400432.

  2. Characterization of Zn(O,S) Buffer Layers for Cu(In,Ga)Se2 Solar Cells.

    PubMed

    Choi, Ji Hyun; Jung, Sung Hee; Chung, Chee Won

    2016-05-01

    Zn(O,S) thin films were deposited using a ZnS target under Ar/O2 gases by radio-frequency magnetron sputtering. As the O2 concentration increased, the deposition rates of the Zn(O,S) films decreased due to increase of O-. The crystalline structure of Zn(O,S) was maintained at up to 0.6% O2, while the films became unstable at the condition exceeding 0.8% O2. This was attributed to incomplete nucleation and film growth on the substrate at the room temperature. Additionally, optical emission spectroscopy analysis indicated that an increased O- intensity at high O2 concentration was responsible for the slow deposition rate and increased oxygen concentration of the films. X-ray diffraction and scanning electron microscopy revealed the formation of a Zn(O,S) crystal structure with partial substitution of O for S and uniform and dense grains of the films. X-ray photoelectron spectroscopy showed that the Zn(O,S) films have a uniform composition of each element and consisted of a mixed crystal structure of Zn(O,S) with Zn-O bonding. Overall, the results of this study confirmed that Zn(O,S) films deposited by radio-frequency sputtering using Ar/O2 gas at room temperature can be applied to Cu(In,Ga)Se2 solar cells as a buffer layer. PMID:27483934

  3. Theoretical and experimental study of highly textured GaAs on silicon using a graphene buffer layer

    NASA Astrophysics Data System (ADS)

    Alaskar, Yazeed; Arafin, Shamsul; Lin, Qiyin; Wickramaratne, Darshana; McKay, Jeff; Norman, Andrew G.; Zhang, Zhi; Yao, Luchi; Ding, Feng; Zou, Jin; Goorsky, Mark S.; Lake, Roger K.; Zurbuchen, Mark A.; Wang, Kang L.

    2015-09-01

    A novel heteroepitaxial growth technique, quasi-van der Waals epitaxy, promises the ability to deposit three-dimensional GaAs materials on silicon using two-dimensional graphene as a buffer layer by overcoming the lattice and thermal expansion mismatch. In this study, density functional theory (DFT) simulations were performed to understand the interactions at the GaAs/graphene hetero-interface as well as the growth orientations of GaAs on graphene. To develop a better understanding of the molecular beam epitaxy-grown GaAs films on graphene, samples were characterized by x-ray diffraction (θ-2θ scan, ω-scan, grazing incidence XRD and pole figure measurement) and transmission electron microscopy. The realizations of smooth GaAs films with a strong (111) oriented fiber-texture on graphene/silicon using this deposition technique are a milestone towards an eventual demonstration of the epitaxial growth of GaAs on silicon, which is necessary for integrated photonics application.

  4. Fe 3O 4 films grown by laser ablation on mica with and without MgO buffer layers

    NASA Astrophysics Data System (ADS)

    Kennedy, R. J.; Stampe, P. A.

    1999-05-01

    Fe 3O 4 and MgO films have been grown on (0 0 1) mica substrates by ablation of an Fe or Mg metal target in an oxygen atmosphere using the fundamental frequency of a Nd : YAG laser. X-ray measurements show that the MgO films are epitaxial and (1 1 1) oriented. The Fe 3O 4 films grown on bare mica substrates are (1 1 1) oriented and random in plane. The introduction of an MgO buffer layer between the mica and the Fe 3O 4 films results in epitaxial (1 1 1) growth of Fe 3O 4. Room temperature high-field magnetization measurements of the random in plane Fe 3O 4/mica films are the same as for the epitaxial Fe 3O 4/MgO/mica films. The out of plane coercivities are almost twice as large as the in-plane coercivities, in contrast to ferrite films grown on Si and GaAs for which Hc|| ˜ Hc⊥ .

  5. Laser Imprint Reduction Using a Low-Density Foam Buffer as a Thermal Smoothing Layer at 351-nm Wavelength

    NASA Astrophysics Data System (ADS)

    Watt, R. G.; Duke, J.; Fontes, C. J.; Gobby, P. L.; Hollis, R. V.; Kopp, R. A.; Mason, R. J.; Wilson, D. C.; Verdon, C. P.; Boehly, T. R.; Knauer, J. P.; Meyerhofer, D. D.; Smalyuk, V.; Town, R. P.; Iwase, A.; Willi, O.

    1998-11-01

    Laser-nonuniformity-induced perturbation growth has been measured on planar foam-buffered plastic (CH) targets irradiated with 351-nm laser radiation. The maximum observed perturbation growth was reduced by about 50% by the foam buffer. Rayleigh-Taylor unstable growth of intentional mass modulations was minimally changed by the addition of the foam buffer. We conclude that the reduction of laser-induced perturbation growth is a result of a reduction in the perturbation seed amplitude rather than any changes in the growth rate in the solid due to preheating by radiation or shocks caused by the presence of the foam buffer.

  6. Investigation of the uncertainties of the estimated optical constants and thickness of very thin semiconductor layers

    NASA Astrophysics Data System (ADS)

    Gushterova, P.; Hristov, B.; Sharlandjiev, P.

    2010-04-01

    We recently developed an approach to the estimation of the complex permittivity (epsilon) and thickness (d) of very thin layers using measurements of their transmittance, front-side reflectance and back-side reflectance. The approach is based on a limited expansion of the Abelès characteristic matrix elements and is especially designed for characterization of very thin layers. In this paper we investigate the uncertainties of the estimated real part of epsilon (epsilon1), the imaginary part of epsilon (epsilon2) and d of semiconductor thin layers that are due to the methodological error and the experimental uncertainties in the optical quantities measured. It is shown that the effect of the uncertainties in the measurable quantities is significantly stronger than that of the methodical error and increases considerably with the decrease of the ratio d/λ (λ being the wavelength). An efficient two-step procedure is proposed to reduce this effect. First, we supply a criterion for determination of d with the lowest uncertainty from the ensemble of estimations constructed on a wavelength by wavelength basis. This is crucial for the next step: the estimation of epsilon1 and epsilon2. The approach proposed ensures estimation of epsilon1, epsilon2 and d with the highest accuracy, limited only by the methodological error.

  7. Layer thickness dependence of anisotropic coupling in Gd/Y superlattices

    NASA Astrophysics Data System (ADS)

    Tsui, F.; Flynn, C. P.; Salamon, M. B.; Borchers, J. A.; Erwin, R. W.; Rhyne, J. J.

    1992-02-01

    The asymmetry of spin-coupling through nonmagnetic yttrium interlayers in b-axis Gd/Y MBE superlattices grown on [101¯0] Y substrates has been examined using SQUID magnetometry and neuron scattering. For c-axis Gd/Y superlattices, the Gd layers align ferromagnetically or antiferromagnetically across the intervening layers depending in an oscillatory manner on the Y thickness with interlayer coupling strengths of approximately 1 kOe. Neutron scans for b-[Gd 43 Å|Y 52 Å] 85 demonstrate that the Gd moments anti-align across the Y in zero field. The Gd layers in samples b-[Gd 47 Å|Y 42 Å] 50 and b-Gd 60 Å|Y 26 Å] 80 with thinner Y interlayers are aligned at temperatures less than 90 K. The saturation fields obtained for these samples are 80, 35 and 20 Oe at 150 K, respectively. This result suggests that the antiferromagnetic coupling mechanism is much weaker than that for the c-axis superlattices. We will compare models for the coupling based on RKKY and dipolar interactions.

  8. Differentiation of magma oceans and the thickness of the depleted layer on Venus

    NASA Technical Reports Server (NTRS)

    Solomatov, V. S.; Stevenson, D. J.

    1993-01-01

    Various arguments suggest that Venus probably has no asthenosphere, and it is likely that beneath the crust there is a highly depleted and highly viscous mantle layer which was probably formed in the early history of the planet when it was partially or completely molten. Models of crystallization of magma oceans suggest that just after crystallization of a hypothetical magma ocean, the internal structure of Venus consists of a crust up to about 70 km thickness, a depleted layer up to about 500 km, and an enriched lower layer which probably consists of an undepleted 'lower mantle' and heavy enriched accumulates near the core-mantle boundary. Partial or even complete melting of Venus due to large impacts during the formation period eventually results in differentiation. However, the final result of such a differentiation can vary from a completely differentiated mantle to an almost completely preserved homogeneous mantle depending on competition between convection and differentiation: between low viscosity ('liquid') convection and crystal settling at small crystal fractions, or between high viscosity ('solid') convection and percolation at large crystal fractions.

  9. Realization of high quality epitaxial current- perpendicular-to-plane giant magnetoresistive pseudo spin-valves on Si(001) wafer using NiAl buffer layer

    NASA Astrophysics Data System (ADS)

    Chen, Jiamin; Liu, J.; Sakuraba, Y.; Sukegawa, H.; Li, S.; Hono, K.

    2016-05-01

    In this letter, we report a NiAl buffer layer as a template for the integration of epitaxial current-perpendicular-plane-giant magnetoresistive (CPP-GMR) devices on a Si(001) single crystalline substrate. By depositing NiAl on a Si wafer at an elevated temperature of 500 °C, a smooth and epitaxial B2-type NiAl(001) layer was obtained. The surface roughness was further improved by depositing Ag on the NiAl layer and applying subsequent annealing process. The epitaxial CPP-GMR devices grown on the buffered Si(001) substrate present a large magnetoresistive output comparable with that of the devices grown on an MgO(001) substrate, demonstrating the possibility of epitaxial spintronic devices with a NiAl templated Si wafer for practical applications.

  10. Influence of CHx thickness layer on the sensing properties of CHx/PS/Si structure against CO2 gas

    NASA Astrophysics Data System (ADS)

    Zouadi, N.; Belhousse, S.; Bradaî, D.; Cheraga, H.; Ouchabane, M.; Keffous, A.; Sam, S.; Gabouze, N.

    2013-11-01

    In this work, we report a study on the influence of hydrocarbon groups (CHx) thickness layer on sensing properties of CHx/Porous Silicon (PS)/Si structures against CO2 gas. The hydrocarbon groups were deposited by plasma of methane-argon mixture. The properties of these structures are investigated by current-voltage, current-time and capacitance-voltage measurements from where a different behaviour depending on CHx layer thickness has been observed. The results show that current-voltage and impedance-voltage characteristics are modified by the gas reactivity on the CHx/PS surface. As the CHx layer thickness increases, the series resistance and the ideality factor of the structure increase. In addition, the response and recovery times of the sensor decrease with increasing the CHx thickness. Finally, the results point out the effect of CHx coating on the sensitivity of the CHx/PS/Si sensor.

  11. Electrical characteristics of Au/n-GaAs structures with thin and thick SiO{sub 2} dielectric layer

    SciTech Connect

    Altuntas, H.; Altindal, S.; Corekci, S.; Ozturk, M. K.; Ozcelik, S.

    2011-10-15

    The aim of this study, to explain effects of the SiO{sub 2} insulator layer thickness on the electrical properties of Au/n-GaAs Shottky barrier diodes (SBDs). Thin (60 A) and thick (250 A) SiO{sub 2} insulator layers were deposited on n-type GaAs substrates using the plasma enganced chemical vapour deposition technique. The current-voltage (I-V) and capacitance-voltage (C-V) characteristics have been carried out at room temperature. The main electrical parameters, such as ideality factor (n), zero-bias barrier height ({phi}{sub Bo}), series resistance (R{sub s}), leakage current, and interface states (N{sub ss}) for Au/SiO{sub 2}/n-GaAs SBDs have been investigated. Surface morphologies of the SiO{sub 2} dielectric layer was analyzed using atomic force microscopy. The results show that SiO{sub 2} insulator layer thickness very affects the main electrical parameters. Au/n-GaAs SBDs with thick SiO{sub 2} insulator layer have low leakage current level, small ideality factor, and low interface states. Thus, Au/n-GaAs SBDs with thick SiO{sub 2} insulator layer shows better diode characteristics than other.

  12. 1-nm-thick graphene tri-layer as the ultimate copper diffusion barrier

    SciTech Connect

    Nguyen, Ba-Son; Lin, Jen-Fin

    2014-02-24

    We demonstrate the thinnest ever reported Cu diffusion barrier, a 1-nm-thick graphene tri-layer. X-ray diffraction patterns and Raman spectra show that the graphene is thermally stable at up to 750 °C against Cu diffusion. Transmission electron microscopy images show that there was no inter-diffusion in the Cu/graphene/Si structure. Raman analyses indicate that the graphene may have degraded into a nanocrystalline structure at 750 °C. At 800 °C, the perfect carbon structure was damaged, and thus the barrier failed. The results of this study suggest that graphene could be the ultimate Cu interconnect diffusion barrier.

  13. Million year old ice found under meter thick debris layer in Antarctica

    NASA Astrophysics Data System (ADS)

    Bibby, Theodore; Putkonen, Jaakko; Morgan, Daniel; Balco, Greg; Shuster, David L.

    2016-07-01

    Cosmogenic nuclide measurements associated with buried glacier ice in Ong Valley, in the Transantarctic Mountains, suggest the preservation of ancient ice. There are three glacial tills on the valley floor which have formed from the concentration of regolith contained within sublimating glacier ice. Two tills are less than 1 m thick and underlain by ice. Measurements of cosmogenic 10Be, 26Al, and 21Ne show that (i) the youngest buried ice unit and corresponding till are at least 11-13 ka, (ii) another ice unit and corresponding intermediate-age till are at least 1.1 Ma old under any circumstances and most likely older than 1.78 Ma, and (iii) the oldest till is at least 1.57 Ma and most likely greater than 2.63 Ma. These observations highlight the longevity of ice under thin debris layers and the potential to sample ancient ice for paleoclimate/paleoatmosphere information close to the present land surface.

  14. Thick escaping magnetospheric ion layer in magnetopause reconnection with MMS observations

    NASA Astrophysics Data System (ADS)

    Nagai, T.; Kitamura, N.; Hasegawa, H.; Shinohara, I.; Yokota, S.; Saito, Y.; Nakamura, R.; Giles, B. L.; Pollock, C.; Moore, T. E.; Dorelli, J. C.; Gershman, D. J.; Paterson, W. R.; Avanov, L. A.; Chandler, M. O.; Coffey, V.; Sauvaud, J. A.; Lavraud, B.; Russell, C. T.; Strangeway, R. J.; Oka, M.; Genestreti, K. J.; Burch, J. L.

    2016-06-01

    The structure of asymmetric magnetopause reconnection is explored with multiple point and high-time-resolution ion velocity distribution observations from the Magnetospheric Multiscale mission. On 9 September 2015, reconnection took place at the magnetopause, which separated the magnetosheath and the magnetosphere with a density ratio of 25:2. The magnetic field intensity was rather constant, even higher in the asymptotic magnetosheath. The reconnected field line region had a width of approximately 540 km. In this region, streaming and gyrating ions are discriminated. The large extension of the reconnected field line region toward the magnetosheath can be identified where a thick layer of escaping magnetospheric ions was formed. The scale of the magnetosheath side of the reconnected field line region relative to the scale of its magnetospheric side was 4.5:1.

  15. Preliminary experimental research on friction characteristics of a thick gravitational casted babbit layer on steel substrate

    NASA Astrophysics Data System (ADS)

    Paleu, V.; Georgescu, S.; Baciu, C.; Istrate, B.; Baciu, E. R.

    2016-08-01

    The ability of the antifriction materials to withstand with no lubrication for a while can be a solution for the catastrophic failure of automotive journal bearings from the internal combustion engines in accidental breakdown of the oil pump. A thick layer of antifriction material (babbit) was deposited by gravitational casting on a steel disk substrate. Four tribological disk samples coated with babbit are tested against a steel shoe on Amsler tribometer at different speeds and loads in dry friction. The values of the friction coefficient versus speed and load are presented, the obtained results indicating a mild wear regime, recommending the new babbit as a possible coating for the bushes of the journal bearings in automotive internal combustion engines. Further tests must be dedicated to the establishment of the wear intensity of the steel shoe - babbit disk tribological pair, both for motor oil lubricated and dry friction conditions.

  16. How oil properties and layer thickness determine the entrainment of spilled surface oil.

    PubMed

    Zeinstra-Helfrich, Marieke; Koops, Wierd; Murk, Albertinka J

    2016-09-15

    Viscosity plays an important role in dispersion of spilled surface oil, so does adding chemical dispersants. For seven different oil grades, entrainment rate and initial droplet size distribution were investigated using a plunging jet apparatus with coupled camera equipment and subsequent image analysis. We found that amount of oil entrained is proportional to layer thickness and largely independent of oil properties: A dispersant dose of 1:200 did not result in a significantly different entrainment rate compared to no dispersants. Oil viscosity had a minor to no influence on entrainment rate, until a certain threshold above which entrainment was impeded. The mean droplet size scales with the modified Weber number as described by Johansen. The obtained results can help improve dispersion algorithms in oil spill fate and transport models, to aid making an informed decision about application of dispersants.

  17. How oil properties and layer thickness determine the entrainment of spilled surface oil.

    PubMed

    Zeinstra-Helfrich, Marieke; Koops, Wierd; Murk, Albertinka J

    2016-09-15

    Viscosity plays an important role in dispersion of spilled surface oil, so does adding chemical dispersants. For seven different oil grades, entrainment rate and initial droplet size distribution were investigated using a plunging jet apparatus with coupled camera equipment and subsequent image analysis. We found that amount of oil entrained is proportional to layer thickness and largely independent of oil properties: A dispersant dose of 1:200 did not result in a significantly different entrainment rate compared to no dispersants. Oil viscosity had a minor to no influence on entrainment rate, until a certain threshold above which entrainment was impeded. The mean droplet size scales with the modified Weber number as described by Johansen. The obtained results can help improve dispersion algorithms in oil spill fate and transport models, to aid making an informed decision about application of dispersants. PMID:27345705

  18. Surface charging of thick porous water ice layers relevant for ion sputtering experiments

    NASA Astrophysics Data System (ADS)

    Galli, A.; Vorburger, A.; Pommerol, A.; Wurz, P.; Jost, B.; Poch, O.; Brouet, Y.; Tulej, M.; Thomas, N.

    2016-07-01

    We use a laboratory facility to study the sputtering properties of centimeter-thick porous water ice subjected to the bombardment of ions and electrons to better understand the formation of exospheres of the icy moons of Jupiter. Our ice samples are as similar as possible to the expected moon surfaces but surface charging of the samples during ion irradiation may distort the experimental results. We therefore monitor the time scales for charging and discharging of the samples when subjected to a beam of ions. These experiments allow us to derive an electric conductivity of deep porous ice layers. The results imply that electron irradiation and sputtering play a non-negligible role for certain plasma conditions at the icy moons of Jupiter. The observed ion sputtering yields from our ice samples are similar to previous experiments where compact ice films were sputtered off a micro-balance.

  19. Pulsed laser deposition of hydroxyapatite thin films on Ti-5Al-2.5Fe substrates with and without buffer layers

    NASA Astrophysics Data System (ADS)

    Nelea, V.; Ristoscu, C.; Chiritescu, C.; Ghica, C.; Mihailescu, I. N.; Pelletier, H.; Mille, P.; Cornet, A.

    2000-12-01

    We present a method for processing hydroxyapatite (HA) thin films on Ti-5Al-2.5Fe substrates. The films were grown by pulsed laser deposition (PLD) in vacuum at room temperature, using a KrF∗ excimer laser. The amorphous as-deposited HA films were recrystallized in ambient air by a thermal treatment at 550°C. The best results have been obtained when inserting a buffer layer of ceramic materials (TiN, ZrO2 or Al2O3). The films were characterized by complementary techniques: grazing incidence X-ray diffraction (GIXRD), scanning electron microscopy (SEM), cross-section transmission electron microscopy (XTEM), SAED, energy dispersive X-ray spectroscopy (EDS) and nanoindentation. The samples with buffer interlayer preserve the stoichiometry are completely recrystallized and present better mechanical characteristics as compared with that without buffer interlayer.

  20. Dependence of the Carrier Transport Characteristics on the Buried Layer Thickness in Ambipolar Double-Layer Organic Field-Effect Transistors Investigated by Electrical and Optical Measurements

    NASA Astrophysics Data System (ADS)

    Zhang, Le; Taguchi, Dai; Manaka, Takaaki; Iwamoto, Mitsumasa

    2013-05-01

    By using current-voltage (I-V) measurements and optical modulation spectroscopy, we investigated the dependence of the carrier behaviour on the film thickness of the buried pentacene layer in C60/pentacene ambipolar double-layer organic field-effect transistors (OFETs). It was found that the buried pentacene layer not only acted as a hole transport layer, but also accounted for the properties of the C60/pentacene interface. The hole and electron behaviour exhibited different thickness dependence on the buried pentacene layer, implying the presence of the spatially separated conduction paths. It was suggested that the injected holes transported along the pentacene/gate dielectric interface, which were little affected by the buried pentacene layer thickness or the upper C60 layer; while, the injected electrons accumulated at the C60/pentacene interface, which were sensitive to the interfacial conditions or the buried pentacene layer. Furthermore, it was suggested that the enhanced surface roughness of the buried pentacene layer was responsible for the observed electron behaviour, especially when dpent>10 nm.

  1. The Anterior Chamber Depth and Retinal Nerve Fiber Layer Thickness in Children

    PubMed Central

    Lee, Jacky W. Y.; Yau, Gordon S. K.; Woo, Tiffany T. Y.; Yick, Doris W. F.; Tam, Victor T. Y.; Yuen, Can Y. F.

    2014-01-01

    Purpose. To investigate the correlation of anterior chamber depth (ACD) with the peripapillary retinal nerve fiber layer (RNFL) thickness, age, axial length (AL), and spherical equivalent in children. Subjects. Consecutive subjects aged 4 to 18 were recruited. Visually disabling eye conditions were excluded. Only the right eye was included for analysis. The ACD was correlated with RNFL thickness, age, spherical equivalent, and AL for all subjects. Subjects were then divided into 3 groups based on their postcycloplegic spherical equivalent: myopes (<−1.0 D), emmetropes (≥−1.0 to ≤+1.0 D), and hyperopes (>+1.0 D). The ACD was compared among the 3 groups before and after age adjustment. Results. In 200 subjects (mean age 7.6 ± 3.3 years), a deeper ACD was correlated with thinner global RNFL (r = −0.2, r2 = 0.06, P = 0.0007), older age (r = 0.4, r2 = 0.1, P < 0.0001), myopic spherical equivalent (r = −0.3, r2 = 0.09, P < 0.0001), and longer AL (r = 0.5, r2 = 0.2, P < 0.0001). The ACD was deepest in myopes (3.5 ± 0.4 mm, n = 67), followed by emmetropes (3.4 ± 0.3, n = 60) and then hyperopes (3.3 ± 0.2, n = 73) (all P < 0.0001). After age adjustment, myopes had a deeper ACD than the other 2 groups (all P < 0.0001). Conclusions. In children, a deeper ACD was associated with thinner RNFL thickness, older age, more myopic spherical equivalent, and longer AL. Myopes had a deeper ACD than emmetropes and hyperopes. PMID:25431789

  2. Elastic bending modulus of single-layer molybdenum disulfide (MoS2): finite thickness effect.

    PubMed

    Jiang, Jin-Wu; Qi, Zenan; Park, Harold S; Rabczuk, Timon

    2013-11-01

    We derive, from an empirical interaction potential, an analytic formula for the elastic bending modulus of single-layer MoS2 (SLMoS2). By using this approach, we do not need to define or estimate a thickness value for SLMoS2, which is important due to the substantial controversy in defining this value for two-dimensional or ultrathin nanostructures such as graphene and nanotubes. The obtained elastic bending modulus of 9.61 eV in SLMoS2 is significantly higher than the bending modulus of 1.4 eV in graphene, and is found to be within the range of values that are obtained using thin shell theory with experimentally obtained values for the elastic constants of SLMoS2. This increase in bending modulus as compared to monolayer graphene is attributed, through our analytic expression, to the finite thickness of SLMoS2. Specifically, while each monolayer of S atoms contributes 1.75 eV to the bending modulus, which is similar to the 1.4 eV bending modulus of monolayer graphene, the additional pairwise and angular interactions between out of plane Mo and S atoms contribute 5.84 eV to the bending modulus of SLMoS2. PMID:24084656

  3. SURFACE TENSION OF SERUM : X. ON THE THICKNESS OF THE MONOMOLECULAR LAYER OF SERUM.

    PubMed

    du Noüy, P L

    1924-06-30

    An attempt was made to apply the assumption that a monolayer of serum exists at a certain dilution, in order to calculate the thickness of this layer or, that is to say, the mean value of one of the dimensions of the molecules of the serum proteins. The criterion taken for the existence of such a monolayer was the existence at a given concentration (1/11,000 for rabbit serum) of a maximum drop in the surface tension of serum solutions kept in watch-glasses. A series of preliminary experiments showed: 1. That the maximum drop in 2 hours took place, for the material used, at a concentration of 1/11,000, and that it always corresponded to an absolute minimum value of the surface tension of the solution, this minimum being quite sharp and well defined. 2. That adsorption took place on the glass as well as on the free surface of the liquid, and that apparently the same part of the molecule, in both cases, was drawn toward the water. 3. That the specific gravity of the anhydrous proteins of the rabbit serum studied was 1.275, whence it followed, on the basis of 6.51 per cent protein content, that the mean thickness of the protein molecules was 35.4 x 10(-8) cm. The same method applied to crystalline egg albumin, pH 6.8, in water, gave 52.8 x 10(-8) cm. for the probable molecular length. PMID:19868899

  4. Ultralow threading dislocation density in GaN epilayer on near-strain-free GaN compliant buffer layer and its applications in hetero-epitaxial LEDs.

    PubMed

    Shih, Huan-Yu; Shiojiri, Makoto; Chen, Ching-Hsiang; Yu, Sheng-Fu; Ko, Chung-Ting; Yang, Jer-Ren; Lin, Ray-Ming; Chen, Miin-Jang

    2015-09-02

    High threading dislocation (TD) density in GaN-based devices is a long unresolved problem because of the large lattice mismatch between GaN and the substrate, which causes a major obstacle for the further improvement of next-generation high-efficiency solid-state lighting and high-power electronics. Here, we report InGaN/GaN LEDs with ultralow TD density and improved efficiency on a sapphire substrate, on which a near strain-free GaN compliant buffer layer was grown by remote plasma atomic layer deposition. This "compliant" buffer layer is capable of relaxing strain due to the absorption of misfit dislocations in a region within ~10 nm from the interface, leading to a high-quality overlying GaN epilayer with an unusual TD density as low as 2.2 × 10(5) cm(-2). In addition, this GaN compliant buffer layer exhibits excellent uniformity up to a 6" wafer, revealing a promising means to realize large-area GaN hetero-epitaxy for efficient LEDs and high-power transistors.

  5. Ultralow threading dislocation density in GaN epilayer on near-strain-free GaN compliant buffer layer and its applications in hetero-epitaxial LEDs

    PubMed Central

    Shih, Huan-Yu; Shiojiri, Makoto; Chen, Ching-Hsiang; Yu, Sheng-Fu; Ko, Chung-Ting; Yang, Jer-Ren; Lin, Ray-Ming; Chen, Miin-Jang

    2015-01-01

    High threading dislocation (TD) density in GaN-based devices is a long unresolved problem because of the large lattice mismatch between GaN and the substrate, which causes a major obstacle for the further improvement of next-generation high-efficiency solid-state lighting and high-power electronics. Here, we report InGaN/GaN LEDs with ultralow TD density and improved efficiency on a sapphire substrate, on which a near strain-free GaN compliant buffer layer was grown by remote plasma atomic layer deposition. This “compliant” buffer layer is capable of relaxing strain due to the absorption of misfit dislocations in a region within ~10 nm from the interface, leading to a high-quality overlying GaN epilayer with an unusual TD density as low as 2.2 × 105 cm−2. In addition, this GaN compliant buffer layer exhibits excellent uniformity up to a 6” wafer, revealing a promising means to realize large-area GaN hetero-epitaxy for efficient LEDs and high-power transistors. PMID:26329829

  6. Effect of Dual Cathode Buffer Layer on the Charge Carrier Dynamics of rrP3HT:PCBM Based Bulk Heterojunction Solar Cell.

    PubMed

    Singh, Ashish; Dey, Anamika; Das, Dipjyoti; Iyer, Parameswar Krishnan

    2016-05-01

    In bulk heterojunction (BHJ) solar cells, the buffer layer plays a vital role in enhancing the power conversion efficiency (PCE) by improving the charge carrier dynamics. A comprehensive understanding of the contacts is especially essential in order to optimize the performance of organic solar cells (OSCs). Although there are several fundamental reports on this subject, a proper correlation of the physical processes with experimental evidence at the photoactive layer and contact materials is essential. In this work, we incorporated three different additional buffer layers, namely, tris(8-hydroxyquinolinato) aluminum (Alq3), bathophenanthroline (BPhen) or bathocuproine (BCP) with LiF/Al as conventional cathode contact in both rrP3HT:PC61BM and rrP3HT:PC71BM blend BHJ solar cells and their corresponding photovoltaic performances were systematically correlated with their energy level diagram. The device with dual cathode buffer layer having ITO/PEDOT:PSS/blend polymer/BCP/LiF/Al configuration showed the best device performance with PCE, η = 4.96%, Jsc = 13.53 mA/cm(2), Voc = 0.60 V and FF= 61% for rrP3HT:PC71BM and PCE, η = 4.5% with Jsc = 13.3 mA/cm(2), Voc = 0.59 V and FF = 59% for rrP3HT:PC61BM. This drastic improvement in PCE in both the device configurations are due to the combined effects of better hole-blocking capacity of BCP and low work function provided by LiF/Al with the blend polymer. These results successfully explain the role of dual cathode buffer layers and their contribution to the PCE improvement and overall device performance with rrP3HT:PCBM based BHJ solar cell. PMID:27075007

  7. Identification of the Chemical Bonding Prompting Adhesion of a-C:H Thin Films on Ferrous Alloy Intermediated by a SiCx:H Buffer Layer.

    PubMed

    Cemin, F; Bim, L T; Leidens, L M; Morales, M; Baumvol, I J R; Alvarez, F; Figueroa, C A

    2015-07-29

    Amorphous carbon (a-C) and several related materials (DLCs) may have ultralow friction coefficients that can be used for saving-energy applications. However, poor chemical bonding of a-C/DLC films on metallic alloys is expected, due to the stability of carbon-carbon bonds. Silicon-based intermediate layers are employed to enhance the adherence of a-C:H films on ferrous alloys, although the role of such buffer layers is not yet fully understood in chemical terms. The chemical bonding of a-C:H thin films on ferrous alloy intermediated by a nanometric SiCx:H buffer layer was analyzed by X-ray photoelectron spectroscopy (XPS). The chemical profile was inspected by glow discharge optical emission spectroscopy (GDOES), and the chemical structure was evaluated by Raman and Fourier transform infrared spectroscopy techniques. The nature of adhesion is discussed by analyzing the chemical bonding at the interfaces of the a-C:H/SiCx:H/ferrous alloy sandwich structure. The adhesion phenomenon is ascribed to specifically chemical bonding character at the buffer layer. Whereas carbon-carbon (C-C) and carbon-silicon (C-Si) bonds are formed at the outermost interface, the innermost interface is constituted mainly by silicon-iron (Si-Fe) bonds. The oxygen presence degrades the adhesion up to totally delaminate the a-C:H thin films. The SiCx:H deposition temperature determines the type of chemical bonding and the amount of oxygen contained in the buffer layer.

  8. Effect of Dual Cathode Buffer Layer on the Charge Carrier Dynamics of rrP3HT:PCBM Based Bulk Heterojunction Solar Cell.

    PubMed

    Singh, Ashish; Dey, Anamika; Das, Dipjyoti; Iyer, Parameswar Krishnan

    2016-05-01

    In bulk heterojunction (BHJ) solar cells, the buffer layer plays a vital role in enhancing the power conversion efficiency (PCE) by improving the charge carrier dynamics. A comprehensive understanding of the contacts is especially essential in order to optimize the performance of organic solar cells (OSCs). Although there are several fundamental reports on this subject, a proper correlation of the physical processes with experimental evidence at the photoactive layer and contact materials is essential. In this work, we incorporated three different additional buffer layers, namely, tris(8-hydroxyquinolinato) aluminum (Alq3), bathophenanthroline (BPhen) or bathocuproine (BCP) with LiF/Al as conventional cathode contact in both rrP3HT:PC61BM and rrP3HT:PC71BM blend BHJ solar cells and their corresponding photovoltaic performances were systematically correlated with their energy level diagram. The device with dual cathode buffer layer having ITO/PEDOT:PSS/blend polymer/BCP/LiF/Al configuration showed the best device performance with PCE, η = 4.96%, Jsc = 13.53 mA/cm(2), Voc = 0.60 V and FF= 61% for rrP3HT:PC71BM and PCE, η = 4.5% with Jsc = 13.3 mA/cm(2), Voc = 0.59 V and FF = 59% for rrP3HT:PC61BM. This drastic improvement in PCE in both the device configurations are due to the combined effects of better hole-blocking capacity of BCP and low work function provided by LiF/Al with the blend polymer. These results successfully explain the role of dual cathode buffer layers and their contribution to the PCE improvement and overall device performance with rrP3HT:PCBM based BHJ solar cell.

  9. Epitaxial growth of Ce 2Y 2O 7 buffer layers for YBa 2Cu 3O 7-δ coated conductors using reel-to-reel DC reactive sputtering

    NASA Astrophysics Data System (ADS)

    Fan, F.; Lu, Y. M.; Ying, L. L.; Liu, Z. Y.; Cai, C. B.; Hühne, R.; Holzapfel, B.

    2011-08-01

    Biaxially textured Ce 2Y 2O 7 (CYO) films were deposited on Ni-5at.%W (Ni-5W) tapes by a DC reactive sputtering technique in a reel-to-reel system. Subsequent YBa 2Cu 3O 7-δ (YBCO) films were prepared using pulsed laser deposition leading to a simplified coated conductor architecture of YBCO/CYO/Ni-5W. X-ray diffraction measurements revealed an epitaxial growth of the CYO buffer layer with a texture spread down to 2.2° and 4.7° for the out-of-plane and in-plane alignment, respectively. Microstructural investigations showed a dense, smooth and crack-free surface morphology for CYO film up to a thickness of 350 nm, implying an effective suppression of cracks due to the incorporation of Y in CeO 2. The superconducting transition temperature T c of about 90 K with a narrow transition of 0.8 K and the inductively measured critical current density J c of about 0.7 MA/cm 2 indicate the potential of the single CYO buffer layer.

  10. Aqueous dispersions of few-layer-thick chemically modified magnesium diboride nanosheets by ultrasonication assisted exfoliation.

    PubMed

    Das, Saroj Kumar; Bedar, Amita; Kannan, Aadithya; Jasuja, Kabeer

    2015-01-01

    The discovery of graphene has led to a rising interest in seeking quasi two-dimensional allotropes of several elements and inorganic compounds. Boron, carbon's neighbour in the periodic table, presents a curious case in its ability to be structured as graphene. Although it cannot independently constitute a honeycomb planar structure, it forms a graphenic arrangement in association with electron-donor elements. This is exemplified in magnesium diboride (MgB2): an inorganic layered compound comprising boron honeycomb planes alternated by Mg atoms. Till date, MgB2 has been primarily researched for its superconducting properties; it hasn't been explored for the possibility of its exfoliation. Here we show that ultrasonication of MgB2 in water results in its exfoliation to yield few-layer-thick Mg-deficient hydroxyl-functionalized nanosheets. The hydroxyl groups enable an electrostatically stabilized aqueous dispersion and create a heterogeneity leading to an excitation wavelength dependent photoluminescence. These chemically modified MgB2 nanosheets exhibit an extremely small absorption coefficient of 2.9 ml mg(-1) cm(-1) compared to graphene and its analogs. This ability to exfoliate MgB2 to yield nanosheets with a chemically modified lattice and properties distinct from the parent material presents a fundamentally new perspective to the science of MgB2 and forms a first foundational step towards exfoliating metal borides. PMID:26041686

  11. Analytical Sensor Response Function of Viscosity Sensors Based on Layered Piezoelectric Thickness Shear Resonators

    NASA Astrophysics Data System (ADS)

    Benes, Ewald; Nowotny, Helmut; Braun, Stefan; Radel, Stefan; Gröschl, Martin

    Resonant piezoelectric sensors based on bulk acoustic wave (BAW) thickness shear resonators are promising for the inline measurement of fluid viscosity, e.g., in industrial processes. The sensor response function can be derived from the general rigorous transfer matrix description of one-dimensional layered structures consisting of piezoelectric and non-piezoelectric layers of arbitrary number. This model according to Nowotny et al. provides a complete analytical description of the electrical and mechanical behaviour of such structures with two electrodes and arbitrary acoustic termination impedances (Rig-1d-Model). We apply this model to derive the sensor response functions and the mechanical displacement curves of the following configurations appropriate for viscosity sensors: An AT cut quartz crystal plate in contact with vacuum at the backside plane and with the liquid under investigation at the front side plane (QL). An AT cut quartz crystal in contact with the liquid under investigation at both sides (LQL). It is shown that in the QL case the originally only heuristically introduced and well established sensor response function according to Kanasawa can be derived from the Rig-1d-Model by introducing minor approximations. Experimental results are presented for the LQL configuration using an N1000 viscosity reference oil as test fluid.

  12. Mapping Active-Layer Thickness in an Urbanized Environment: The Barrow Urban Heat Island Study

    NASA Astrophysics Data System (ADS)

    Klene, A. E.; Hinkel, K. M.; Nelson, F. E.; Shiklomanov, N. I.

    2003-12-01

    Local and global changes in the Arctic climate may have profound impacts on hydrology, soil stability, and infrastructure, such as roads, buildings, and water, gas, or oil pipelines. These changes will be manifested in large part through permafrost, which can influence virtually all physical, chemical, and biological processes occurring in the soil. The "Barrow Urban Heat Island Study" (BUHIS) is an ongoing project in northern Alaska that examines the effects of urbanization on air and soil temperatures in and around Barrow. At 4600 residents, Barrow is the largest native settlement in the circumarctic region and the northernmost urban area in the United States. Initiated in summer 2001, BUHIS is recording temperature and thaw depth at more than 60 locations throughout the village, the developing suburbs, and surrounding undisturbed tundra. This paper describes one part of study examining the active layer and anthropogenic influences on its thickness. Summer air and soil temperature data, together with digital vegetation and soil maps, are used as input to a modified Stefan solution to map depth of thaw over an area of 100 square kilometers that includes both the village of Barrow and the surrounding tundra. Maps representing end-of-summer conditions for 2001 provide the first spatial/temporal representation of active-layer variability within an urbanized area. Increasing urban development in Arctic regions is causing information about changes accompanying industrial development and urbanization to become more vital, particularly given the possibility of a warming climate.

  13. Aqueous dispersions of few-layer-thick chemically modified magnesium diboride nanosheets by ultrasonication assisted exfoliation.

    PubMed

    Das, Saroj Kumar; Bedar, Amita; Kannan, Aadithya; Jasuja, Kabeer

    2015-06-04

    The discovery of graphene has led to a rising interest in seeking quasi two-dimensional allotropes of several elements and inorganic compounds. Boron, carbon's neighbour in the periodic table, presents a curious case in its ability to be structured as graphene. Although it cannot independently constitute a honeycomb planar structure, it forms a graphenic arrangement in association with electron-donor elements. This is exemplified in magnesium diboride (MgB2): an inorganic layered compound comprising boron honeycomb planes alternated by Mg atoms. Till date, MgB2 has been primarily researched for its superconducting properties; it hasn't been explored for the possibility of its exfoliation. Here we show that ultrasonication of MgB2 in water results in its exfoliation to yield few-layer-thick Mg-deficient hydroxyl-functionalized nanosheets. The hydroxyl groups enable an electrostatically stabilized aqueous dispersion and create a heterogeneity leading to an excitation wavelength dependent photoluminescence. These chemically modified MgB2 nanosheets exhibit an extremely small absorption coefficient of 2.9 ml mg(-1) cm(-1) compared to graphene and its analogs. This ability to exfoliate MgB2 to yield nanosheets with a chemically modified lattice and properties distinct from the parent material presents a fundamentally new perspective to the science of MgB2 and forms a first foundational step towards exfoliating metal borides.

  14. Aqueous dispersions of few-layer-thick chemically modified magnesium diboride nanosheets by ultrasonication assisted exfoliation

    PubMed Central

    Das, Saroj Kumar; Bedar, Amita; Kannan, Aadithya; Jasuja, Kabeer

    2015-01-01

    The discovery of graphene has led to a rising interest in seeking quasi two-dimensional allotropes of several elements and inorganic compounds. Boron, carbon’s neighbour in the periodic table, presents a curious case in its ability to be structured as graphene. Although it cannot independently constitute a honeycomb planar structure, it forms a graphenic arrangement in association with electron-donor elements. This is exemplified in magnesium diboride (MgB2): an inorganic layered compound comprising boron honeycomb planes alternated by Mg atoms. Till date, MgB2 has been primarily researched for its superconducting properties; it hasn’t been explored for the possibility of its exfoliation. Here we show that ultrasonication of MgB2 in water results in its exfoliation to yield few-layer-thick Mg-deficient hydroxyl-functionalized nanosheets. The hydroxyl groups enable an electrostatically stabilized aqueous dispersion and create a heterogeneity leading to an excitation wavelength dependent photoluminescence. These chemically modified MgB2 nanosheets exhibit an extremely small absorption coefficient of 2.9 ml mg−1 cm−1 compared to graphene and its analogs. This ability to exfoliate MgB2 to yield nanosheets with a chemically modified lattice and properties distinct from the parent material presents a fundamentally new perspective to the science of MgB2 and forms a first foundational step towards exfoliating metal borides. PMID:26041686

  15. Distribution and landscape controls of organic layer thickness and carbon within the Alaskan Yukon River Basin

    USGS Publications Warehouse

    Pastick, Neal J.; Rigge, Matthew B.; Wylie, Bruce K.; Jorgenson, M. Torre; Rose, Joshua R.; Johnson, Kristofer D.; Ji, Lei

    2014-01-01

    Understanding of the organic layer thickness (OLT) and organic layer carbon (OLC) stocks in subarctic ecosystems is critical due to their importance in the global carbon cycle. Moreover, post-fire OLT provides an indicator of long-term successional trajectories and permafrost susceptibility to thaw. To these ends, we 1) mapped OLT and associated uncertainty at 30 m resolution in the Yukon River Basin (YRB), Alaska, employing decision tree models linking remotely sensed imagery with field and ancillary data, 2) converted OLT to OLC using a non-linear regression, 3) evaluate landscape controls on OLT and OLC, and 4) quantified the post-fire recovery of OLT and OLC. Areas of shallow (2 = 0.68; OLC: R2 = 0.66), where an average of 16 cm OLT and 5.3 kg/m2 OLC were consumed by fires. Strong predictors of OLT included climate, topography, near-surface permafrost distributions, soil wetness, and spectral information. Our modeling approach enabled us to produce regional maps of OLT and OLC, which will be useful in understanding risks and feedbacks associated with fires and climate feedbacks.

  16. Effect of Boundary Layer Thickness on Secondary Structures in a Short Inlet Curved Duct

    NASA Astrophysics Data System (ADS)

    Gartner, Jeremy; Amitay, Michael

    2013-11-01

    The flow pattern in short ducts with aggressive curvature can lead in some cases to an asymmetric flow field. In the current work, a two dimensional honeycomb mesh was added upstream of the curved duct to create a pressure drop across it, and therefore an increased velocity deficit in the boundary layer profile. This velocity deficit led to a stronger streamwise separation, overcoming the flow mechanisms that result in the asymmetric flowfield. Experiments were conducted at M = 0.2, 0.44 and 0.58 in an expanding aggressive duct with square cross section with an area ratio of 1.27. Pressure data, together with Particle Image Velocimetry (PIV), verify the symmetry of the incoming flow field. Steady pressure distributions along the lower surface of the curved duct were obtained, as well as steady and time dependent total pressure distributions at the aerodynamic interface plane, enabling the analysis of the flow characteristics throughout the duct length. The effect of inserting a honeycomb was tested by increasing its height from 0 to 2.2 times the baseline flow boundary layer thickness upstream of the curve. Crosstream flow symmetry was achieved for specific geometrical configurations with a negligible decrease in the pressure recovery.

  17. High thick layer-by-layer 3D multiscale fibrous scaffolds for enhanced cell infiltration and it's potential in tissue engineering.

    PubMed

    Shalumon, K T; Chennazhi, K P; Nair, Shantikumar V; Jayakumar, R

    2013-12-01

    This work explains the fabrication and potential applicability of high thick three dimensional (3-D) electrospun multiscale fibrous scaffolds in tissue engineering by focusing on the possible fabrication techniques. Multiscale fibrous scaffold of poly(lactic acid) (PLA) was fabricated by combining nano and micro fibers in optimum concentrations. Finely chopped multiscale fibers were allowed to undergo compression, freeze-drying, resin embedding, cryo-grinding and layering techniques to make 3D scaffolds and the layer-by-layer method was found to be most suitable for 3-D scaffold fabrication. Cell studies in layered 3D scaffolds were performed using MG 63 cells and infiltration was observed using SEM and confocal microscope. Since the layered high thick 3D scaffold perfectly complies with the requirements, this could be proposed as one of the suitable methods for constructing 3D scaffolds for tissue engineering applications. PMID:24266265

  18. Macular Ganglion Cell -Inner Plexiform Layer Thickness Is Associated with Clinical Progression in Mild Cognitive Impairment and Alzheimers Disease

    PubMed Central

    Choi, Seong Hye; Park, Sang Jun

    2016-01-01

    Purpose We investigated the association of the macular ganglion cell-inner plexiform layer (GCIPL) and peripapillary retinal nerve fiber layer (RNFL) thicknesses with disease progression in mild cognitive impairment (MCI) and Alzheimer’s disease (AD). Methods We recruited 42 patients with AD, 26 with MCI, and 66 normal elderly controls. The thicknesses of the RNFL and GCIPL were measured via spectral-domain optic coherent tomography in all participants at baseline. The patients with MCI or AD underwent clinical and neuropsychological tests at baseline and once every year thereafter for 2 years. Results The Clinical Dementia Rating scale-Sum of Boxes (CDR-SB) score exhibited significant negative relationships with the average GCIPL thickness (β = -0.15, p < 0.05) and the GCIPL thickness in the superotemporal, superonasal, and inferonasal sectors. The composite memory score exhibited significant positive associations with the average GCIPL thickness and the GCIPL thickness in the superotemporal, inferonasal, and inferotemporal sectors. The temporal RNFL thickness, the average and minimum GCIPL thicknesses, and the GCIPL thickness in the inferonasal, inferior, and inferotemporal sectors at baseline were significantly reduced in MCI patients who were converted to AD compared to stable MCI patients. The change of CDR-SB from baseline to 2 years exhibited significant negative associations with the average (β = -0.150, p = 0.006) and minimum GCIPL thicknesses as well as GCIPL thickness in the superotemporal, superior, superonasal, and inferonasal sectors at baseline. Conclusions Our data suggest that macular GCIPL thickness represents a promising biomarker for monitoring the progression of MCI and AD. PMID:27598262

  19. Improving efficiency by hybrid TiO(2) nanorods with 1,10-phenanthroline as a cathode buffer layer for inverted organic solar cells.

    PubMed

    Sun, Chunming; Wu, Yulei; Zhang, Wenjun; Jiang, Nianquan; Jiu, Tonggang; Fang, Junfeng

    2014-01-22

    We reported a significant improvement in the efficiency of organic solar cells by introducing hybrid TiO2:1,10-phenanthroline as a cathode buffer layer. The devices based on polymer thieno[3,4-b]thiophene/benzodithiophene:[6,6]-phenyl C71-butyric acid methyl ester (PTB7:PC71BM) with hybrid buffer layer exhibited an average power conversion efficiency (PCE) as high as 8.02%, accounting for 20.8% enhancement compared with the TiO2 based devices. The cathode modification function of this hybrid material could also be extended to the poly(3-hexylthiophene):[6,6]-phenyl-C61-butyric acid methyl ester (P3HT:PC61BM) system. We anticipate that this study will stimulate further research on hybrid materials to achieve more efficient charge collection and device performance.

  20. Epitaxial growth and thermal dynamics of CeO II buffer layer on textured Ni-W substrates for YBCO coated conductors

    NASA Astrophysics Data System (ADS)

    Pan, C. Y.; Cai, C. B.; Ying, L. L.; Lu, Y. M.; Liu, Z. Y.; Gao, B.; Liu, J. L.

    2008-02-01

    In present study, the biaxially textured CeO II buffer layers on Ni-W substrates have been prepared by chemical solution deposition (CSD) with cerium acetate as the starting precursor, mixed with solvents of Propionic acid, Isopropanol and Acetylacetone. Typical XRD θ-2θ scans and the pole figure display well out-of-plane and in-plane textures of CeO II films. SEM and AFM results suggest that the buffer layer have uniform and smooth surface. Meanwhile, the effects of heating rate on CeO II formation starting from the precursor solution have been studied using differential thermal analysis (DTA). And the further analysis is given by XRD results for precursor xrogel at the corresponding temperature. Detailed high temperature optical microscope (HTOM) photographs investigate the surface characteristics evolved with temperature.

  1. Evolution of damping in ferromagnetic/nonmagnetic thin film bilayers as a function of nonmagnetic layer thickness

    NASA Astrophysics Data System (ADS)

    Azzawi, S.; Ganguly, A.; Tokaç, M.; Rowan-Robinson, R. M.; Sinha, J.; Hindmarch, A. T.; Barman, A.; Atkinson, D.

    2016-02-01

    The evolution of damping in Co/Pt, Co/Au, and Ni81Fe19 /Pt bilayers was studied with increasing nonmagnetic (NM) heavy-metal layer thicknesses in the range 0.2 nm ≤tNM≤10 nm , where tNM is the NM layer thickness. Magnetization precession was measured in the time domain using time-resolved magneto-optical Kerr effect magnetometry. Fitting of the data with a damped sinusoidal function was undertaken in order to extract the phenomenological Gilbert damping coefficient α . For Pt-capped Co and Ni81Fe19 layers a large and complex dependence of α on the Pt layer thickness was observed, while for Au capping no significant dependence was observed. It is suggested that this difference is related to the different localized spin-orbit interaction related to intermixing and to d -d hybridization of Pt and Au at the interface with Co or Ni81Fe19 . Also it was shown that damping is affected by the crystal structure differences in FM thin films and at the interface, which can modify the spin-diffusion length and the effective spin-mixing conductance. In addition to the intrinsic damping an extrinsic contribution plays an important role in the enhancement of damping when the Pt capping layer is discontinuous. The dependence of damping on the nonmagnetic layer thickness is complex but shows qualitative agreement with recent theoretical predictions.

  2. Optical, structural, and chemical properties of flash evaporated In{sub 2}S{sub 3} buffer layer for Cu(In,Ga)Se{sub 2} solar cells

    SciTech Connect

    Verma, Rajneesh; Chirila, Adrian; Guettler, Dominik; Perrenoud, Julian; Pianezzi, Fabian; Tiwari, Ayodhya N.; Datta, Debjit; Kumar, Satyendra; Mueller, Ulrich

    2010-10-15

    In{sub 2}S{sub 3} layers were deposited by flash evaporation technique with varying flash rates. The optical constants of layers based on Tauc-Lorentz model dielectric function were extracted from spectroscopic ellipsometry measurements. X-ray photoelectron spectroscopic investigation revealed the presence of oxygen impurity in as-deposited and air-annealed layers with traces of Na inclusion in the layer grown at high flash rate. The enhancement in crystalline arrangement of as-deposited layer after air annealing was confirmed by Raman spectroscopy. Rutherford backscattering measurements revealed the growth of off-stoichiometric layers at all flash rates. An analytical layer growth model has been proposed supporting the results obtained by various layer characterization techniques. The solar cells were prepared with flash evaporated In{sub 2}S{sub 3} buffer layers and their performances were compared with CdS reference solar cell. A significant gain in short-circuit current was obtained after air annealing of the complete device at 200 deg. C for 20 min. A maximum conversion efficiency of 12.6% was delivered by a high flash rate In{sub 2}S{sub 3} buffered cell with open-circuit voltage close to that of CdS reference cell. The improvement in device performance after air annealing treatment is explained by thermally enhanced Cu and oxygen diffusion from Cu(In,Ga)Se{sub 2} and i-ZnO to In{sub 2}S{sub 3} layer, respectively.

  3. Investigation of Thickness Dependence of Metal Layer in Al/Mo/4H-SiC Schottky Barrier Diodes.

    PubMed

    Lee, Seula; Lee, Jinseon; Kang, Tai-Young; Kyoung, Sinsu; Jung, Eun Sik; Kim, Kyung Hwan

    2015-11-01

    In this paper, we present the preparation and characterization of Schottky barrier diodes based on silicon carbide with various Schottky metal layer thickness values. In this structure, molybdenum and aluminum were employed as the Schottky barrier metal and top electrode, respectively. Schottky metal layers were deposited with thicknesses ranging from 1000 to 3000 Å, and top electrodes were deposited with thickness as much as 3000 Å. The deposition of both metal layers was performed using the facing target sputtering (FTS) method, and the fabricated samples were annealed with the tubular furnace at 300 degrees C under argon ambient for 10 min. The Schottky barrier height, series resistance, and ideality factor was calculated from the forward I-V characteristic curve using the methods proposed by Cheung and Cheung, and by Norde. For as-deposited Schottky diodes, we observed an increase of the threshold voltage (V(T)) as the thickness of the Schottky metal layer increased. After the annealing, the Schottky barrier heights (SBHs) of the diodes, including Schottky metal layers of over 2000 Å, increased. In the case of the Schottky metal layer deposited to 1000 Å, the barrier heights decreased due to the annealing process. This may have been caused by the interfacial penetration phenomenon through the Schottky metal layer. For variations of V(T), the SBH changed with a similar tendency. The ideality factor and series resistance showed no significant changes before or after annealing. This indicates that this annealing condition is appropriate for Mo SiC structures. Our results confirm that it is possible to control V(T) by adjusting the thickness of the Schottky metal layer.

  4. Investigation of Thickness Dependence of Metal Layer in Al/Mo/4H-SiC Schottky Barrier Diodes.

    PubMed

    Lee, Seula; Lee, Jinseon; Kang, Tai-Young; Kyoung, Sinsu; Jung, Eun Sik; Kim, Kyung Hwan

    2015-11-01

    In this paper, we present the preparation and characterization of Schottky barrier diodes based on silicon carbide with various Schottky metal layer thickness values. In this structure, molybdenum and aluminum were employed as the Schottky barrier metal and top electrode, respectively. Schottky metal layers were deposited with thicknesses ranging from 1000 to 3000 Å, and top electrodes were deposited with thickness as much as 3000 Å. The deposition of both metal layers was performed using the facing target sputtering (FTS) method, and the fabricated samples were annealed with the tubular furnace at 300 degrees C under argon ambient for 10 min. The Schottky barrier height, series resistance, and ideality factor was calculated from the forward I-V characteristic curve using the methods proposed by Cheung and Cheung, and by Norde. For as-deposited Schottky diodes, we observed an increase of the threshold voltage (V(T)) as the thickness of the Schottky metal layer increased. After the annealing, the Schottky barrier heights (SBHs) of the diodes, including Schottky metal layers of over 2000 Å, increased. In the case of the Schottky metal layer deposited to 1000 Å, the barrier heights decreased due to the annealing process. This may have been caused by the interfacial penetration phenomenon through the Schottky metal layer. For variations of V(T), the SBH changed with a similar tendency. The ideality factor and series resistance showed no significant changes before or after annealing. This indicates that this annealing condition is appropriate for Mo SiC structures. Our results confirm that it is possible to control V(T) by adjusting the thickness of the Schottky metal layer. PMID:26726688

  5. Rapid deposition of biaxially-textured CeO 2 buffer layers on polycrystalline nickel alloy for superconducting tapes by ion assisted pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Xiong, Xuming; Winkler, Dag

    2000-07-01

    The long deposition time of sharply textured buffer layer was the main obstacle for the ion beam assisted deposition (IBAD) process to go to large scale fabrication of superconducting tapes. This paper shows that this obstacle can be overcome. (002)-oriented, sharply-textured CeO 2 buffer layers with (111) phi-scan full width of half maximum (FWHM) of 10° were deposited by ion beam assisted pulsed laser deposition (PLD) on polycrystalline Hastelloy C in 10 min. The deposition rate was about 3 nm/s. CeO 2 film surface was smooth and free of cracks compared with film by inclined substrate deposition (ISD). The IBAD was carried out at small ion-to-atom ratio values, which resulted in CeO 2 (200) plane aligned along the incident plane of the ion beam. The Jc of Y 1Ba 2Cu 3O 7- δ (YBCO) film deposited on the buffer layer was 7.3×10 5 A/cm 2.

  6. Non-Stoichiometric Amorphous Indium Selenide Thin Films as a Buffer Layer for CIGS Solar Cells with Various Temperatures in Rapid Thermal Annealing.

    PubMed

    Yoo, Myoung Han; Kim, Nam-Hoon

    2016-05-01

    The conventional structure of most of copper indium gallium diselenide (Culn(1-x)Ga(x)Se2, CIGS) solar cells includes a CdS thin film as a buffer layer. Cd-free buffer layers have attracted great interest for use in photovoltaic applications to avoid the use of hazardous and toxic materials. The RF magnetron sputtering method was used with an InSe2 compound target to prepare the indium selenide precursor. Rapid thermal annealing (RTA) was conducted in ambient N2 gas to control the concentration of volatile Se from the precursor with a change in temperature. The nature of the RTA-treated indium selenide thin films remained amorphous under annealing temperatures of ≤ 700 degrees C. The Se concentration of the RTA-treated specimens demonstrated an opposite trend to the annealing temperature. The optical transmittance and band gap energies were 75.33% and 2.451-3.085 eV, respectively, and thus were suitable for the buffer layer. As the annealing temperature increased, the resistivity decreased by an order-of-magnitude from 10(4) to 10(1) Ω-cm. At lower Se concentrations, the conductivity abruptly changed from p-type to n-type without crystallite formation in the amorphous phase, with the carrier concentration in the order of 10(17) cm(-3). PMID:27483873

  7. Analyses of layer-thickness effects in bilayered dental ceramics subjected to thermal stresses and ring-on-ring tests

    SciTech Connect

    Hsueh, Chun-Hway; Thompson, G. A.; Jadaan, Osama M.; Wereszczak, Andrew A; Becher, Paul F

    2008-01-01

    Objectives. The purpose of this study was to analyze the stress distribution through the thickness of bilayered dental ceramics subjected to both thermal stresses and ring-on-ring tests and to systematically examine how the individual layer thickness influences this stress distribution and the failure origin. Methods. Ring-on-ring tests were performed on In-Ceram Alumina/Vitadur Alpha porcelain bilayered disks with porcelain in the tensile side, and In-Ceram Alumina to porcelain layer thickness ratios of 1:2, 1:1, and 2:1 were used to characterize the failure origins as either surface or interface. Based on the thermomechanical properties and thickness of each layer, the cooling temperature from glass transition temperature, and the ring-on-ring loading configuration, the stress distribution through the thickness of the bilayer was calculated using closed-form solutions. Finite element analyses were also performed to verify the analytical results. Results. The calculated stress distributions showed that the location of maximum tension during testing shifted from the porcelain surface to the In-Ceram Alumina/porcelain interface when the relative layer thickness ratio changed from 1:2 to 1:1 and to 2:1. This trend is in agreement with the experimental observations of the failure origins. Significance. For bilayered dental ceramics subjected to ring-on-ring tests, the location of maximum tension can shift from the surface to the interface depending upon the layer thickness ratio. The closed-form solutions for bilayers subjected to both thermal stresses and ring-on-ring tests are explicitly formulated which allow the biaxial strength of the bilayer to be evaluated.

  8. Temperature and layer thickness dependent in situ investigations on epindolidione organic thin-film transistors

    PubMed Central

    Lassnig, R.; Striedinger, B.; Jones, A.O.F.; Scherwitzl, B.; Fian, A.; Głowacl, E.D.; Stadlober, B.; Winkler, A.

    2016-01-01

    We report on in situ performance evaluations as a function of layer thickness and substrate temperature for bottom-gate, bottom-gold contact epindolidione organic thin-film transistors on various gate dielectrics. Experiments were carried out under ultra-high vacuum conditions, enabling quasi-simultaneous electrical and surface analysis. Auger electron spectroscopy and thermal desorption spectroscopy (TDS) were applied to characterize the quality of the substrate surface and the thermal stability of the organic films. Ex situ atomic force microscopy (AFM) was used to gain additional information on the layer formation and surface morphology of the hydrogen-bonded organic pigment. The examined gate dielectrics included SiO2, in its untreated and sputtered forms, as well as the spin-coated organic capping layers poly(vinyl-cinnamate) (PVCi) and poly((±)endo,exo-bicyclo[2.2.1]hept-5-ene-2,3-dicarboxylic acid, diphenylester) (PNDPE, from the class of polynorbornenes). TDS and AFM revealed Volmer-Weber island growth dominated film formation with no evidence of a subjacent wetting layer. This growth mode is responsible for the comparably high coverage required for transistor behavior at 90–95% of a monolayer composed of standing molecules. Surface sputtering and an increased sample temperature during epindolidione deposition augmented the surface diffusion of adsorbing molecules and therefore led to a lower number of better-ordered islands. Consequently, while the onset of charge transport was delayed, higher saturation mobility was obtained. The highest, bottom-contact configuration, mobilities of approximately 2.5 × 10−3cm2/Vs were found for high coverages (50 nm) on sputtered samples. The coverage dependence of the mobility showed very different characteristics for the different gate dielectrics, while the change of the threshold voltage with coverage was approximately the same for all systems. An apparent decrease of the mobility with increasing coverage on the

  9. Determining the Effective Density and Stabilizer Layer Thickness of Sterically Stabilized Nanoparticles

    PubMed Central

    2016-01-01

    A series of model sterically stabilized diblock copolymer nanoparticles has been designed to aid the development of analytical protocols in order to determine two key parameters: the effective particle density and the steric stabilizer layer thickness. The former parameter is essential for high resolution particle size analysis based on analytical (ultra)centrifugation techniques (e.g., disk centrifuge photosedimentometry, DCP), whereas the latter parameter is of fundamental importance in determining the effectiveness of steric stabilization as a colloid stability mechanism. The diblock copolymer nanoparticles were prepared via polymerization-induced self-assembly (PISA) using RAFT aqueous emulsion polymerization: this approach affords relatively narrow particle size distributions and enables the mean particle diameter and the stabilizer layer thickness to be adjusted independently via systematic variation of the mean degree of polymerization of the hydrophobic and hydrophilic blocks, respectively. The hydrophobic core-forming block was poly(2,2,2-trifluoroethyl methacrylate) [PTFEMA], which was selected for its relatively high density. The hydrophilic stabilizer block was poly(glycerol monomethacrylate) [PGMA], which is a well-known non-ionic polymer that remains water-soluble over a wide range of temperatures. Four series of PGMAx–PTFEMAy nanoparticles were prepared (x = 28, 43, 63, and 98, y = 100–1400) and characterized via transmission electron microscopy (TEM), dynamic light scattering (DLS), and small-angle X-ray scattering (SAXS). It was found that the degree of polymerization of both the PGMA stabilizer and core-forming PTFEMA had a strong influence on the mean particle diameter, which ranged from 20 to 250 nm. Furthermore, SAXS was used to determine radii of gyration of 1.46 to 2.69 nm for the solvated PGMA stabilizer blocks. Thus, the mean effective density of these sterically stabilized particles was calculated and determined to lie between 1.19 g

  10. Urban Geocryology: Mapping Urban-Rural Contrasts in Active-Layer Thickness, Barrow Penninsula, Northern Alaska

    NASA Astrophysics Data System (ADS)

    Klene, A. E.; Nelson, F. E.

    2014-12-01

    As development proceeds in the high latitudes, information about interactions between urban influences and the thickness of the active layer above permafrost becomes vital, particularly given the possibility of increasing temperatures accompanying climate change. Permafrost characteristics are often mapped at small geographical scales (i.e., over large areas), at low resolution, and without extensive field validation. Although maps of active-layer thickness (ALT) have been created for areas of relatively undisturbed terrain, this has rarely been done within urbanized areas, even though ALT is a critical factor in the design of roads, buildings, pipelines, and other elements of infrastructure. The need for detailed maps of ALT is emphasized in work on potential hazards in permafrost regions associated with global warming scenarios. Northern Alaska is a region considered to be at moderate to high risk for thaw-induced damage under climatic warming. The Native Village of Barrow (71°17'44"N; 156°45' 59"W), the economic, transportation, and administrative hub of the North Slope Borough, is the northernmost community in the USA, and the largest native settlement in the circum-Arctic. A winter urban heat island in Barrow, earlier snowmelt in the village, and dust deposition downwind of gravel pads and roads are all urban effects that could increase ALT. A recent empirical study documented a 17 to 41 cm difference in ALT between locations in the village of Barrow and surrounding undeveloped tundra, even in similar land-cover classes. We mapped ALT in the Barrow Peninsula, with particular attention to contrasts between the urbanized village and relatively undisturbed tundra in the nearby Barrow Environmental Observatory. The modified Berggren solution, an advanced analytic solution to the general Stefan problem of calculating frost and thaw depth, was used in a geographic context to map ALT over the 150 km² area investigated in the Barrow Urban Heat Island Study. The

  11. Optical reflectivity and Raman scattering in few-layer-thick graphene highly doped by K and Rb.

    PubMed

    Jung, Naeyoung; Kim, Bumjung; Crowther, Andrew C; Kim, Namdong; Nuckolls, Colin; Brus, Louis

    2011-07-26

    We report the optical reflectivity and Raman scattering of few layer (L) graphene exposed to K and Rb vapors. Samples many tens of layers thick show the reflectivity and Raman spectra of the stage 1 bulk alkali intercalation compounds (GICs) KC(8) and RbC(8). However, these bulk optical and Raman properties only begin to appear in samples more than about 15 graphene layers thick. The 1 L to 4 L alkali exposed graphene Raman spectra are profoundly different than the Breit-Wigner-Fano (BWF) spectra of the bulk stage 1 compounds. Samples less than 10 layers thick show Drude-like plasma edge reflectivity dip in the visible; alkali exposed few layer graphenes are significantly more transparent than intrinsic graphene. Simulations show the in-plane free electron density is lower than in the bulk stage 1 GICs. In few layer graphenes, alkalis both intercalate between layers and adsorb on the graphene surfaces. Charge transfer electrically dopes the graphene sheets to densities near and above 10(+14) electrons/cm(2). New intrinsic Raman modes at 1128 and 1264 cm(-1) are activated by in-plane graphene zone folding caused by strongly interacting, locally crystalline alkali adlayers. The K Raman spectra are independent of thickness for L = 1-4, indicating that charge transfer from adsorbed and intercalated K layers are similar. The Raman G mode is downshifted and significantly broadened from intrinsic graphene. In contrast, the Rb spectra vary strongly with L and show increased doping by intercalated alkali as L increases. Rb adlayers appear to be disordered liquids, while intercalated layers are locally crystalline solids. A significant intramolecular G mode electronic resonance Raman enhancement is observed in K exposed graphene, as compared with intrinsic graphene. PMID:21682332

  12. Tunable work function of a WO{sub x} buffer layer for enhanced photocarrier collection of pin-type amorphous silicon solar cells

    SciTech Connect

    Fang Liang; Baik, Seung Jae; Kang, Sang Jung; Seo, Jung Won; Jeon, Jin-Wan; Lim, Koeng Su; Kim, Jeong Won; Kim, Yoon Hak

    2011-05-15

    An in situ postdeposition ultraviolet treatment was proposed to improve the electrical properties of a tungsten oxide (WO{sub x}) buffer layer of pin-type amorphous silicon-based solar cell. Based on the x-ray and ultraviolet photoelectron spectroscopy and the activation energy measurements, it was found that the work function of WO{sub x} is tunable by ultraviolet light treatment, and the collection performance of solar cells incorporating WO{sub x} with the lower work function is further improved. Moreover, the optimal band alignment scheme for a window layer is discussed in terms of obtaining enhanced carrier collection without open circuit voltage degradation.

  13. A CdSe thin film: a versatile buffer layer for improving the performance of TiO2 nanorod array:PbS quantum dot solar cells

    NASA Astrophysics Data System (ADS)

    Tan, Furui; Wang, Zhijie; Qu, Shengchun; Cao, Dawei; Liu, Kong; Jiang, Qiwei; Yang, Ying; Pang, Shan; Zhang, Weifeng; Lei, Yong; Wang, Zhanguo

    2016-05-01

    To fully utilize the multiple exciton generation effects in quantum dots and improve the overall efficiency of the corresponding photovoltaic devices, nanostructuralizing the electron conducting layer turns out to be a feasible strategy. Herein, PbS quantum dot solar cells were fabricated on the basis of morphologically optimized TiO2 nanorod arrays. By inserting a thin layer of CdSe quantum dots into the interface of TiO2 and PbS, a dramatic enhancement in the power conversion efficiency from 4.2% to 5.2% was realized and the resulting efficiency is one of the highest values for quantum dot solar cells based on nanostructuralized buffer layers. The constructed double heterojunction with a cascade type-II energy level alignment is beneficial for promoting photogenerated charge separation and reducing charge recombination, thereby responsible for the performance improvement, as revealed by steady-state analyses as well as ultra-fast photoluminescence and photovoltage decays. Thus this paper provides a good buffer layer to the community of quantum dot solar cells.To fully utilize the multiple exciton generation effects in quantum dots and improve the overall efficiency of the corresponding photovoltaic devices, nanostructuralizing the electron conducting layer turns out to be a feasible strategy. Herein, PbS quantum dot solar cells were fabricated on the basis of morphologically optimized TiO2 nanorod arrays. By inserting a thin layer of CdSe quantum dots into the interface of TiO2 and PbS, a dramatic enhancement in the power conversion efficiency from 4.2% to 5.2% was realized and the resulting efficiency is one of the highest values for quantum dot solar cells based on nanostructuralized buffer layers. The constructed double heterojunction with a cascade type-II energy level alignment is beneficial for promoting photogenerated charge separation and reducing charge recombination, thereby responsible for the performance improvement, as revealed by steady

  14. Evaluation of layer thickness in human teeth using higher-order-mode leaky Lamb wave interdigital transducers

    SciTech Connect

    Toda, Shinji; Fujita, Takeshi; Arakawa, Hirohisa; Toda, Kohji

    2005-03-01

    An ultrasonic nondestructive evaluation technique of the layer thickness in human teeth is proposed using a leaky Lamb wave device with two arch-shaped interdigital transducers, operating at a plate/water interface. The use of a higher-order-mode leaky Lamb wave with a phase velocity higher than the longitudinal wave velocity in the human tooth is essential to detect reflected ultrasound beams from the tooth section The layer thickness of dentin, estimated from the measured time interval between two reflected echoes, is in good agreement with the optically measured data.

  15. Note: Accurate determination of thickness of multiple layers of thin film deposited on a piezoelectric quartz crystal.

    PubMed

    Wajid, Abdul

    2013-10-01

    Modern day piezoelectric quartz crystal microbalances for thin film deposition control are based on Z-match equation, which is mathematically valid for deposition of a single material on a given quartz crystal. When multiple layers are deposited, thickness and deposition rate errors accumulate due to mismatch of acoustic impedance of different materials. Here we present a novel method, based on the acoustic transfer matrix formalism, for accurate determination of thickness of an arbitrary number of layers of dissimilar materials deposited on a quartz crystal. Laboratory data show excellent accuracy of the method compared to conventional Z-match equation. PMID:24182174

  16. The Bending Strength, Internal Bonding and Thickness Swelling of a Five Layer Sandwiched Bamboo Particleboard

    NASA Astrophysics Data System (ADS)

    Jamaludin, M. A.; Bahari, S. A.; Nordin, K.; Soh, T. F. T.

    2010-03-01

    The demand for wood based material is increasing but the supply is decreasing. Therefore the price of these raw materials has increased. Bamboo provides an economically feasible alternative raw material for the wood based industry. Its properties are comparable to wood. It is also compatible with the existing processing technology. Bamboo is in abundance, easy to propagate and of short maturation period. Bamboo provides a cheaper alternative resource for the wood based industry. The development of new structural components from bamboo will widen its area of application from handicrafts to furniture and building components. In this study, five layer sandwiched bamboo particleboard were manufactured. The sandwiched Bamboo PB consists of a bamboo PB core, oil palm middle veneers and thin meranti surface veneers. The physical and mechanical properties of the bamboo sandwiched particleboards were tested in accordance to the BS-EN 317:1993 [1] and BS-EN 310:1993 [2], respectively. All the samples passed the standards. The modulus of elasticity was about 352% higher than the value specified in the BS standard, BS-EN 312-4:1996 [3]. The Internal bonding was about 23% higher than the general requirements specified in the standard. On the other hand, the thickness swelling was about 6% lower than the standard. No glue line failure was observed in the strength tests. Critical failures in the IB tests were observed in the particleboards. Tension failures were observed in the surface veneers in the bending tests. The five layer sandwiched bamboo particleboard can be used for light weight construction such as furniture, and wall and door panels in buildings.

  17. Sheet shape-controlling method for hundreds-of-nanometer-thick polymer film using soluble polymer layer

    NASA Astrophysics Data System (ADS)

    Shimbo, Sota; Fujie, Toshinori; Iwase, Eiji

    2016-06-01

    We proposed a sheet shape-controlling method for a hundreds-of-nanometers-thick polymeric ultrathin film (referred to as a “nanosheet”) for folding the film into a cylindrical shape and unfolding the film into a flat shape. To control the shape of the nanosheet, we used a triple-layered structure, which included a nanosheet and additional two layers of a water-soluble polymer. The additional two layers are thicker than the nanosheet, and one of the two layers was loaded to prestretch that layer. Therefore, the triple-layered structure was folded into a cylindrical shape owing to strain mismatch between the two layers and unfolded into a flat shape after the dissolution of the two layers. In this study, we could successfully estimate the radius of curvature of the triple-layered structure by considering the strain mismatch between the two layers. In addition, we confirmed that the triple-layered structure unfolded into a flat shape by the dissolution of the two layers.

  18. Retinal nerve fiber layer thickness profiles associated with ocular laterality and dominance.

    PubMed

    Choi, Jin A; Kim, Jung-Sub; Park, Hae-Young Lopilly; Park, Hana; Park, Chan Kee

    2014-01-13

    Although human anatomy is arranged symmetrically based on a central vertical axis, the majority of persons will use one side of their body more readily than the other. Interestingly, these lateral body dominances including ocular dominance are all rightward. The asymmetry in retinal nerve fiber layer (RNFL) thickness between the right and left eyes in healthy subjects has been reported in several studies, and the reason for this structural difference between right and left eyes is unclear. In the manuscript, we hypothesized that the characteristics of ocular dominance are reflected in the RNFL profile and may be related to inter-ocular structural differences between right and left eyes. In this study, ocular dominance occurred mostly in right eyes (right vs. left: 78.77% vs. 21.22%; P<0.001). According to ocular dominance and laterality, different relationships between the inferior and superior RNFLs were observed. The right eyes had a thicker RNFL, except in the superior quadrant, than the left eyes. Regardless of laterality, inferior RNFL was thicker than superior RNFL in the dominant eyes. To our knowledge, this paper is the first report demonstrating the RNFL characteristics associated with ocular dominance.

  19. A large-deformation thin plate theory with application to one-atom-thick layers

    NASA Astrophysics Data System (ADS)

    Delfani, M. R.; Shodja, H. M.

    2016-02-01

    Nowadays, two-dimensional materials due to their vast engineering and biomedical applications have been the focus of many researches. The present paper proposes a large-deformation theory for thin plates with application to one-atom-thick layers (OATLs). The deformation is formulated exactly in the mathematical framework of Lagrangian description. In particular, an exact finite strain analysis is given - in addition to the usual strain tensor associated to the middle surface, the second and third fundamental forms of the middle surface of the deformed thin plate are also maintained in the analysis. Exact closed-form solutions for a uniaxially curved thin plate due to pure bending in one case and due to a combination of vertical and horizontal loading in another are obtained. As a special case of the latter problem, the exact solution for the plane-strain bulge test of thin plates is derived. Subsequently, the approximation of Vlassak and Nix [Vlassak, J.J., Nix, W.D., 1992. J. Mater. Res., 7(12), 3242-3249] for the load-deflection equation is recovered. The given numerical results are devoted to graphene as the most well-known OATL.

  20. Dust devil height and spacing with relation to the martian planetary boundary layer thickness

    NASA Astrophysics Data System (ADS)

    Fenton, Lori K.; Lorenz, Ralph

    2015-11-01

    In most remote and unmonitored places, little is known about the characteristics of daytime turbulent activity. Few processes render the optically transparent atmospheres of Earth and Mars visible; put more plainly, without clever instruments it is difficult to "see the unseen". To address this, we present a pilot study of images of martian dust devils (DDs) testing the hypothesis that DD height and spacing correlates with the thickness of the planetary boundary layer (PBL), h. The survey includes Context Camera (CTX) images from a 580 × 590 km2 area (196-208°E, 30-40°N) in northern Amazonis Planitia, spanning ∼3.6 Mars Years (MY) from Ls = 134.55°, MY 28 (13 November 2006) to Ls = 358.5°, MY 31 (28 July 2013). DD activity follows a repeatable seasonal pattern similar to that found in previous surveys, with a distinct "on" season during local summer, beginning shortly before the northern spring equinox (Ls = 0°) and lasting until just after the northern fall equinox (Ls = 180°). DD heights measured from shadow lengths varied considerably, with median values peaking at local midsummer. Modeled PBL heights, constrained by those measured from radio occultation data, follow a similar seasonal trend, and correlation of the two suggests that the martian PBL thickness is approximately 5 times the median DD height. These results compare favorably to the limited terrestrial data available. DD spacing was measured using nearest neighbor statistics, following the assumption that because convection cell widths have been measured to be ∼1.2 ± 0.2h (Willis, G.E., Deardorff, J.W. [1979]. J. Geophys. Res. 84(C1), 295-302), a preference for DD formation at vertices of convection cells intersections could be used to estimate the PBL height. During local spring and summer, the DD average nearest neighbor (ANN) ranged from ∼1 to 2h, indicating that DD spacing does indeed correlate with PBL height. However, this result is complicated by two factors: (1) convection cell