1.3-μm InGaAsP planar buried heterostructure laser diodes with AlInAs electron stopper layer

NASA Astrophysics Data System (ADS)

Tsai, Chia-Lung; Yen, Chih-Ta; Chou, Cheng-Yi; Chang, S. J.; Wu, Meng-Chyi

2012-06-01

This study reports on the realization of 1.3-μm InGaAsP buried-heterostructure (BH) laser diodes (LDs) via an Fe-doped semi-insulating InP layer and an AlInAs electron stopper layer (ESL). Experimentally, the as-cleaved BH LD with an AlInAs ESL exhibited improved characteristics in terms of threshold current, slope efficiency, and maximum light output power at 90 °C as compared to those of the normal BH LD without an AlInAs ESL. In addition, high internal quantum efficiency or reduced threshold current density was observed, indicating increased modal gain in BH LDs fabricated with an AlInAs epilayer on top of the active region. It was also found that the temperature sensitivity of the BH LDs with an AlInAs ESL is more stable than that of the normal BH LDs. These results could be attributed to the suppression of thermal carrier leakage out of strain-compensated multiple-quantum-well by a large conduction-band offset of the AlInAs/InGaAsP heterojunction. Otherwise, without consideration of damping factor or coupling loss, the 3-dB bandwidth of the proposed BH LDs reaches a high value of 15.3 GHz. Finally, this TO-can packaged BH LD shows an eye-opening feature with the extinction ratio of 7.49 dB while operating at 10 Gbit/s at 50 mA.

INTERNATIONAL CONFERENCE ON SEMICONDUCTOR INJECTION LASERS SELCO-87: Electrical response of InGaAsP/InP heterolasers

NASA Astrophysics Data System (ADS)

Luc, Vu V.; Eliseev, P. G.; Man'ko, Margarita A.; Tsotsorya, M. V.

1988-11-01

An investigation was made of the change in the voltage across laser diodes emitting in the 1.3 μm range as a result of introduction of an external optical feedback in the form of an electrical response to interruption of the feedback ("optoelectronic" signal). Measurements were made on single-mode buried stripe heterostructures, using both unpackaged laboratory lasers and also serially manufactured ILPN-202 devices with radiation coupled out via a fiber waveguide. The optoelectronic signal reached 10-16 mV, but when a fiber waveguide was used, it was only 0.1-0.8 mV, depending on the quality of the contact between the laser and the fiber. Experiments showed that the ILPN-202 lasers could be used without any additional optics as sensors capable of detection of submicron displacements with a sensitivity in excess of 10 kV/m.

Step-Tapered Active-Region Mid-Infrared Quantum Cascade Lasers and Novel Fabrication Processes for Buried Heterostructures

DTIC Science & Technology

2015-07-28

up, g, IFR , E54 (or E43), and 54 (or 43) in STA-DPR, STA-SPR, and shallow-well QCL structures. 1 CHAPTER ONE INTRODUCTION 1.1 Introduction...much less transition diagonality than in shallow-well TA-QCL devices. To that effect, when calculating the IFR factor, summed over all transition...219 Å2 ps vs. 239 Å2 ps). However, when calculating the IFR factor, summed over all transition energies, affecting the EL linewidth [i.e., Eqn. (1

Room temperature continuous wave operation of quantum cascade laser at λ ~ 9.4 μm

NASA Astrophysics Data System (ADS)

Hou, Chuncai; Zhao, Yue; Zhang, Jinchuan; Zhai, Shenqiang; Zhuo, Ning; Liu, Junqi; Wang, Lijun; Liu, Shuman; Liu, Fengqi; Wang, Zhanguo

2018-03-01

Continuous wave (CW) operation of long wave infrared (LWIR) quantum cascade lasers (QCLs) is achieved up to a temperature of 303 K. For room temperature CW operation, the wafer with 35 stages was processed into buried heterostructure lasers. For a 2-mm-long and 10-μm-wide laser with high-reflectivity (HR) coating on the rear facet, CW output power of 45 mW at 283 K and 9 mW at 303 K is obtained. The lasing wavelength is around 9.4 μm locating in the LWIR spectrum range. Project supported by the National Key Research And Development Program (No. 2016YFB0402303), the National Natural Science Foundation of China (Nos. 61435014, 61627822, 61574136, 61774146, 61674144, 61404131), the Key Projects of Chinese Academy of Sciences (Nos. ZDRW-XH-2016-4, QYZDJ-SSW-JSC027), and the Beijing Natural Science Foundation (No. 4162060, 4172060).

Strained-layer indium gallium arsenide-gallium arsenide- aluminum galium arsenide photonic devices by metalorganic chemical vapor deposition

NASA Astrophysics Data System (ADS)

Osowski, Mark Louis

With the arrival of advanced growth technologies such as molecular beam epitaxy (MBE) and metalorganic chemical vapor deposition (MOCVD), research in III-V compound semiconductor photonic devices has flourished. Advances in fabrication processes have allowed the realization of high-performance quantum well lasers which emit over a wide spectral range and operate with low threshold currents. As a result, semiconductor lasers are presently employed in a wide variety of applications, including fiber-optic telecommunications, optical spectroscopy, solid-state laser pumping, and photonic integrated circuits. The work in this dissertation addresses three photonic device structures which are currently receiving a great deal of attention in the research community: integrable quantum well laser devices, distributed feedback (DFB) laser devices, and quantum wire arrays. For the realization of the integrable and integrated photonic devices described-in Chapter 2, a three-step selective-area growth technique was utilized. The selective epitaxy process was used to produce discrete buried-heterostructure Fabry Perot lasers with threshold currents as low as 2.6 mA. Based on this process, broad- spectrum edge-emitting superluminescent diodes are demonstrated which display spectral widths of over 80 nm. In addition, the monolithic integration of a multiwavelength emitter is demonstrated in which two distinct laser sources are coupled into a single output waveguide. The dissertation also describes the development of a single-growth-step ridge waveguide DFB laser. The DFB laser utilizes an asymmetric cladding waveguide structure to enhance the interaction of the optical mode with the titanium surface metal to promote single frequency emission via gain coupling. These lasers exhibit low threshold currents (11 mA), high side mode suppression ratios (50 dB), and narrow linewidths (45 kHz). In light of the substantial performance advantages of quantum well lasers relative to double heterostructure lasers, extensive efforts have been directed toward producing quantum wire systems. In view of this, the final subject of this dissertation details the fabrication and characterization of quantum wire arrays by selective-area MOCVD. The method employs a silicon dioxide grating mask with sub-micron oxide dimensions to achieve selective deposition of high-quality buried layers in the open areas of the patterned substrate. This allows the fabrication of embedded nanostructures in a single growth step, and the crystallographic nature of the growth allows for control of their lateral size. Using this process, the growth of strained InGaAs wires with a lateral dimension of less than 50 nm are obtained. Subsequent characterization by photoluminescence, scanning electron microscopy and transmission electron microscopy is also presented.

Few-fJ/bit data transmissions using directly modulated lambda-scale embedded active region photonic-crystal lasers

NASA Astrophysics Data System (ADS)

Takeda, Koji; Sato, Tomonari; Shinya, Akihiko; Nozaki, Kengo; Kobayashi, Wataru; Taniyama, Hideaki; Notomi, Masaya; Hasebe, Koichi; Kakitsuka, Takaaki; Matsuo, Shinji

2013-07-01

A low operating energy is needed for nanocavity lasers designed for on-chip photonic network applications. On-chip nanocavity lasers must be driven by current because they act as light sources driven by electronic circuits. Here, we report the high-speed direct modulation of a lambda-scale embedded active region photonic-crystal (LEAP) laser that holds three records for any type of laser operated at room temperature: a low threshold current of 4.8 µA, a modulation current efficiency of 2.0 GHz µA-0.5 and an operating energy of 4.4 fJ bit-1. Five major technologies make this performance possible: a compact buried heterostructure, a photonic-crystal nanocavity, a lateral p-n junction realized by ion implantation and thermal diffusion, an InAlAs sacrificial layer and current-blocking trenches. We believe that an output power of 2.17 µW and an operating energy of 4.4 fJ bit-1 will enable us to realize on-chip photonic networks in combination with the recently developed highly sensitive receivers.

Design of high breakdown voltage GaN vertical HFETs with p-GaN buried buffer layers for power switching applications

NASA Astrophysics Data System (ADS)

Du, Jiangfeng; Liu, Dong; Zhao, Ziqi; Bai, Zhiyuan; Li, Liang; Mo, Jianghui; Yu, Qi

2015-07-01

To achieve a high breakdown voltage, a GaN vertical heterostructure field effect transistor with p-GaN buried layers (PBL-VHFET) is proposed in this paper. The breakdown voltage of this GaN-based PBL-VHFET could be improved significantly by the optimizing thickness of p-GaN buried layers and doping concentration in PBL. When the GaN buffer layer thickness is 15 μm, the thickness, length and p-doping concentration of PBL are 0.3 μm, 2.7 μm, and 3 × 1017 cm-3, respectively. Simulation results show that the breakdown voltage and on-resistance of the device with two p-GaN buried layers are 3022 V and 3.13 mΩ cm2, respectively. The average breakdown electric field would reach as high as 201.5 V/μm. Compared with the typical GaN vertical heterostructure FETs without PBL, both of breakdown voltage and average breakdown electric field of device are increased more than 50%.

Initial evaluation of commercially available InGaAsP DFB laser diodes for use in high-speed digital fiber optic transceivers

NASA Technical Reports Server (NTRS)

Cook, Anthony L.; Hendricks, Herbert D.

1990-01-01

NASA has been pursuing the development of high-speed fiber-optic transceivers for use in a number of space data system applications. Current efforts are directed toward a high-performance all-integrated-circuit transceiver operating up to the 3-5 Gb/s range. Details of the evaluation and selection of candidate high-speed optical sources to be used in the space-qualified high-performance transceiver are presented. Data on the performance of commercially available DFB (distributed feedback) lasers are presented, and their performance relative to each other and to their structural design with regard to their use in high-performance fiber-optic transceivers is discussed. The DFB lasers were obtained from seven commercial manufacturers. The data taken on each laser included threshold current, differential quantum efficiency, CW side mode suppression radio, wavelength temperature coefficient, threshold temperature coefficient, natural linewidth, and far field pattern. It was found that laser diodes with buried heterostructures and first-order gratings had, in general, the best CW operating characteristics. The modulated characteristics of the DFB laser diodes are emphasized. Modulated linewidth, modulated side mode suppression ratio, and frequency response are discussed.

Laser diode bars based on strain-compensated AlGaPAs/GaAs heterostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Marmalyuk, Aleksandr A; Ladugin, M A; Yarotskaya, I V

2012-01-31

Traditional (in the AlGaAs/GaAs system) and phosphorus-compensated (in the AlGaAs/AlGaPAs/GaAs system) laser heterostructures emitting at a wavelength of 850 nm are grown by MOVPE and studied. Laser diode bars are fabricated and their output characteristics are studied. The method used to grow heterolayers allowed us to control (minimise) mechanical stresses in the AlGaPAs/GaAs laser heterostructure, which made it possible to keep its curvature at the level of the initial curvature of the substrate. It is shown that the use of a compensated AlGaPAs/GaAs heterostructure improves the linear distribution of emitting elements in the near field of laser diode arrays andmore » allows the power - current characteristic to retain its slope at high pump currents owing to a uniform contact of all emitting elements with the heat sink. The radius of curvature of the grown compensated heterostructures turns out to be smaller than that of traditional heterostructures.« less

An experimental study of noise in mid-infrared quantum cascade lasers of different designs

NASA Astrophysics Data System (ADS)

Schilt, Stéphane; Tombez, Lionel; Tardy, Camille; Bismuto, Alfredo; Blaser, Stéphane; Maulini, Richard; Terazzi, Romain; Rochat, Michel; Südmeyer, Thomas

2015-04-01

We present an experimental study of noise in mid-infrared quantum cascade lasers (QCLs) of different designs. By quantifying the high degree of correlation occurring between fluctuations of the optical frequency and voltage between the QCL terminals, we show that electrical noise is a powerful and simple mean to study noise in QCLs. Based on this outcome, we investigated the electrical noise in a large set of 22 QCLs emitting in the range of 7.6-8 μm and consisting of both ridge-waveguide and buried-heterostructure (BH) lasers with different geometrical designs and operation parameters. From a statistical data processing based on an analysis of variance, we assessed that ridge-waveguide lasers have a lower noise than BH lasers. Our physical interpretation is that additional current leakages or spare injection channels occur at the interface between the active region and the lateral insulator in the BH geometry, which induces some extra noise. In addition, Schottky-type contacts occurring at the interface between the n-doped regions and the lateral insulator, i.e., iron-doped InP, are also believed to be a potential source of additional noise in some BH lasers, as observed from the slight reduction in the integrated voltage noise observed at the laser threshold in several BH-QCLs.

Temperature dependence of DC transport characteristics for a two-dimensional electron gas in an undoped Si/SiGe heterostructure

NASA Astrophysics Data System (ADS)

Chou, Kuan-Yu; Hsu, Nai-Wen; Su, Yi-Hsin; Chou, Chung-Tao; Chiu, Po-Yuan; Chuang, Yen; Li, Jiun-Yun

2018-02-01

We investigate DC characteristics of a two-dimensional electron gas (2DEG) in an undoped Si/SiGe heterostructure and its temperature dependence. An insulated-gate field-effect transistor was fabricated, and transfer characteristics were measured at 4 K-300 K. At low temperatures (T < 45 K), source electrons are injected into the buried 2DEG channel first and drain current increases with the gate voltage. By increasing the gate voltage further, the current saturates followed by a negative transconductance observed, which can be attributed to electron tunneling from the buried channel to the surface channel. Finally, the drain current is saturated again at large gate biases due to parallel conduction of buried and surface channels. By increasing the temperature, an abrupt increase in threshold voltage is observed at T ˜ 45 K and it is speculated that negatively charged impurities at the Al2O3/Si interface are responsible for the threshold voltage shift. At T > 45 K, the current saturation and negative transconductance disappear and the device acts as a normal transistor.

Amplification in Double Heterostructure GaAs Lasers.

DTIC Science & Technology

1981-03-15

done, for example, in the book by Siegman . When the laser signal which is to be amplified is a single mode, it is important to include the possibility...k A’AD-A097 862 AEROSPACE CORP EL SEGUNDO CA ELECTRONICS RESEARCH LAP) P 5 20/5 I AMPLIFICATION IN DOUBLE HETEROSTRUCTURE GAAS LASERS .(U IMAR al E...GARMIRE, M CHANG F04701-80-C-0081I UNCLASSIFIED TR GO81(6930 03)-2 SD-TA8-30 NL Amplification in Double Heterostructure GaAs Lasers E. GARMIRE nd M

InGaAs nano-photodetectors based on photonic crystal waveguide including ultracompact buried heterostructure.

PubMed

Nozaki, Kengo; Matsuo, Shinji; Takeda, Koji; Sato, Tomonari; Kuramochi, Eiichi; Notomi, Masaya

2013-08-12

Ultrasmall InGaAs photodetectors based on a photonic crystal waveguide with a buried heterostructure (BH) were demonstrated for the first time. A sufficiently high DC responsivity of ~1 A/W was achieved for the 3.4-μm-long detector. The dynamic response revealed a 3-dB bandwidth of 6 GHz and a 10-Gb/s eye pattern. These results were thanks to the strong confinement of both photons and carriers in a small BH and will pave the way for unprecedented nano-photodetectors with a high quantum efficiency and small capacitance. Our device potentially has an ultrasmall junction capacitance of much less than 1 fF and may enable us to eliminate electrical amplifiers for future optical receivers and subsequent ultralow-power optical links on a chip.

Molecular-beam epitaxy of 7-8 μm range quantum-cascade laser heterostructures

NASA Astrophysics Data System (ADS)

Babichev, A. V.; Denisov, D. V.; Filimonov, A. V.; Nevedomsky, V. N.; Kurochkin, A. S.; Gladyshev, A. G.; Karachinsky, L. Ya; Sokolovskii, G. S.; Novikov, I. I.; Bousseksou, A.; Egorov, A. Yu

2017-11-01

The method of molecular beam epitaxy demonstrates the possibility to create high quality heterostructures of quantum cascade lasers in a spectral range of 7-8 μm containing 50 quantum cascades in an active region. Design based on the principle of two-phonon resonant scattering is used. X-ray diffraction and transmission electron microscopy experiments confirm high structural properties of the created heterostructures, e.g. the identity of the composition and thickness of epitaxial layers in all 50 cascades. Edge-emitting lasers based on the grown heterostructure demonstrate lasing with threshold current density of 2.8 kA/cm2 at a temperature of 78 K.

InxGa1-xSb Channel p-Metal-Oxide-Semiconductor Field Effect Transistors: Effect of Strain and Heterostructure Design

DTIC Science & Technology

2011-07-06

biaxial compressive strain is known to split the light- and heavy-hole bands, reducing the interband scattering and causing the light hole band to move up...and heterostructure design are presented. In Section V, we use temperature- dependent measurements and pulsed I-V measurements to analyze the results...minimal in our devices. The temperature dependence of hole mobility was stud- ied for both the surface and buried channel devices, as plot- ted in Fig

INTERNATIONAL CONFERENCE ON SEMICONDUCTOR INJECTION LASERS SELCO-87: Relationship between the p-n junction position and the threshold current of stripe lasers emitting in the 1.3-μm range

NASA Astrophysics Data System (ADS)

Walachová, J.; Zelinka, J.

1988-11-01

The method of profiling with a probe was used to determine the p-n junction position in the active layer InP/GaInAsP double heterostructure lasers designed for operation in the region of 1.3 μm. Double heterostructures with different Zn concentrations in the upper GaInAsP layer were investigated. An explanation was provided of the shift or lack of shift of the p-n junction in different heterostructure lasers. The average threshold current was correlated with the p-n junction position.

Novel engineered compound semiconductor heterostructures for advanced electronics applications

NASA Astrophysics Data System (ADS)

Stillman, Gregory E.; Holonyak, Nick, Jr.; Coleman, James J.

1992-06-01

To provide the technology base that will enable SDIO capitalization on the performance advantages offered through novel engineered multiple-lavered compound semiconductor structures, this project has focussed on three specific areas: (1) carbon doping of AlGaAs/GaAs and InP/InGaAs materials for reliable high frequency heterojunction bipolar transistors; (2) impurity induced layer disordering and the environmental degradation of AlxGal-xAs-GaAs quantum-well heterostructures and the native oxide stabilization of AlxGal-xAs-GaAs quantum well heterostructure lasers; and (3) non-planar and strained-layer quantum well heterostructure lasers and laser arrays. The accomplishments in this three year research are reported in fifty-six publications and the abstracts included in this report.

Oxide Interfaces: emergent structure and dynamics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Clarke, Roy

This Final Report describes the scientific accomplishments that have been achieved with support from grant DE-FG02-06ER46273 during the period 6/1/2012– 5/31/2016. The overall goals of this program were focused on the behavior of epitaxial oxide heterostructures at atomic length scales (Ångstroms), and correspondingly short time-scales (fs -ns). The results contributed fundamentally to one of the currently most active frontiers in condensed matter physics research, namely to better understand the intricate relationship between charge, lattice, orbital and spin degrees of freedom that are exhibited by complex oxide heterostructures. The findings also contributed towards an important technological goal which was to achievemore » a better basic understanding of structural and electronic correlations so that the unusual properties of complex oxides can be exploited for energy-critical applications. Specific research directions included: probing the microscopic behavior of epitaxial interfaces and buried layers; novel materials structures that emerge from ionic and electronic reconfiguration at epitaxial interfaces; ultrahigh-resolution mapping of the atomic structure of heterointerfaces using synchrotron-based x-ray surface scattering, including direct methods of phase retrieval; using ultrafast lasers to study the effects of transient strain on coherent manipulation of multi-ferroic order parameters; and investigating structural ordering and relaxation processes in real-time.« less

Heterostructures for quantum-cascade lasers of the wavelength range of 7-8 μm

NASA Astrophysics Data System (ADS)

Babichev, A. V.; Gladyshev, A. G.; Filimonov, A. V.; Nevedomskii, V. N.; Kurochkin, A. S.; Kolodeznyi, E. S.; Sokolovskii, G. S.; Bugrov, V. E.; Karachinsky, L. Ya.; Novikov, I. I.; Bousseksou, A.; Egorov, A. Yu.

2017-07-01

It is shown that molecular-beam-epitaxy technology can be used to fabricate heterostructures for quantum-cascade lasers of the wavelength range of 7-8 μm with an active region comprising 50 cascades based on a heterojunction of In0.53Ga0.47As/Al0.48In0.52As solid solutions. The optical emission is obtained using a quantum-cascade design operating on the principle of two-phonon resonance scattering. The properties of heterostructures were studied by the methods of X-ray diffraction and transmission electron microscopy, which showed their high quality with respect to the identical compositions and thicknesses of all 50 cascades. Stripe-geometry lasers made of these heterostructures exhibited lasing with a threshold current density below 1.6 kA/cm2 at a temperature of 78 K.

Organic heterostructures deposited by MAPLE on AZO substrate

NASA Astrophysics Data System (ADS)

Socol, M.; Preda, N.; Stanculescu, A.; Breazu, C.; Florica, C.; Stanculescu, F.; Iftimie, S.; Girtan, M.; Popescu-Pelin, G.; Socol, G.

2017-09-01

Organic heterostructures based on poly(3-hexylthiophene) (P3HT) and fullerene (C60) as blends or multilayer were deposited on Al:ZnO (AZO) by Matrix-Assisted Pulsed Laser Evaporation (MAPLE) technique. The AZO layers were obtained by Pulsed Laser Deposition (PLD) on glass substrate, the high quality of the films being reflected by the calculated figure of merit. The organic heterostructures were investigated from morphological, optical and electrical point of view by atomic force microscopy (AFM), UV-vis spectroscopy, photoluminescence (PL) and current-voltage (I-V) measurements, respectively. The increase of the C60 content in the blend heterostructure has as result a high roughness. Compared with the multilayer heterostructure, those based on blends present an improvement in the electrical properties. Under illumination, the highest current value was recorded for the heterostructure based on the blend with the higher C60 amount. The obtained results showed that MAPLE is a useful technique for the deposition of the organic heterostructures on AZO as transparent conductor electrode.

Optically pumped quantum-dot Cd(Zn)Se/ZnSe laser and microchip converter for yellow-green spectral region

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lutsenko, E V; Voinilovich, A G; Rzheutskii, N V

2013-05-31

The room temperature laser generation in the yellow-green ({lambda} = 558.5-566.7 nm) spectral range has been demonstrated under optical pumping by a pulsed nitrogen laser of Cd(Zn)Se/ZnSe quantum dot heterostructures. The maximum achieved laser wavelength was as high as {lambda} = 566.7 nm at a laser cavity length of 945 {mu}m. High values of both the output pulsed power (up to 50 W) and the external differential quantum efficiency ({approx}60%) were obtained at a cavity length of 435 {mu}m. Both a high quality of the laser heterostructure and a low lasing threshold ({approx}2 kW cm{sup -2}) make it possible tomore » use a pulsed InGaN laser diode as a pump source. A laser microchip converter based on this heterostructure has demonstrated a maximum output pulse power of {approx}90 mW at {lambda} = 560 nm. The microchip converter was placed in a standard TO-18 (5.6 mm in diameter) laser diode package. (semiconductor lasers. physics and technology)« less

Microring Resonators Vertically Coupled to Buried Heterostructure Bus Waveguides

DTIC Science & Technology

2005-06-01

Seung June Choi, Kostadin Djordjev, Sang Jun Choi, P. Daniel Dapkus, Fellow, IEEE, Wilson Lin, Giora Griffel , Ray Menna, and John Connolly Abstract—The...Department of Electrical Engineering-Electrophysics, University of Southern California, Los Angeles, CA 90089 USA. W. Lin, G. Griffel , R. Menna, and J

Laser generation in opal-like single-crystal and heterostructure photonic crystals

NASA Astrophysics Data System (ADS)

Kuchyanov, A. S.; Plekhanov, A. I.

2016-11-01

This study describes the laser generation of a 6Zh rhodamine in artificial opals representing single-crystal and heterostructure films. The spectral and angular properties of emission and the threshold characteristics of generation are investigated. In the case where the 6Zh rhodamine was in a bulk opal, the so-called random laser generation was observed. In contrast to this, the laser generation caused by a distributed feedback inside the structure of the photonic bandgap was observed in photonic-crystal opal films.

Long-term reliability study and failure analysis of quantum cascade lasers

NASA Astrophysics Data System (ADS)

Xie, Feng; Nguyen, Hong-Ky; Leblanc, Herve; Hughes, Larry; Wang, Jie; Miller, Dean J.; Lascola, Kevin

2017-02-01

Here we present lifetime test results of 4 groups of quantum cascade lasers (QCL) under various aging conditions including an accelerated life test. The total accumulated life time exceeds 1.5 million device·hours, which is the largest QCL reliability study ever reported. The longest single device aging time was 46.5 thousand hours (without failure) in the room temperature test. Four failures were found in a group of 19 devices subjected to the accelerated life test with a heat-sink temperature of 60 °C and a continuous-wave current of 1 A. Visual inspection of the laser facets of failed devices revealed an astonishing phenomenon, which has never been reported before, which manifested as a dark belt of an unknown substance appearing on facets. Although initially assumed to be contamination from the environment, failure analysis revealed that the dark substance is a thermally induced oxide of InP in the buried heterostructure semiinsulating layer. When the oxidized material starts to cover the core and blocks the light emission, it begins to cause the failure of QCLs in the accelerated test. An activation energy of 1.2 eV is derived from the dependence of the failure rate on laser core temperature. With the activation energy, the mean time to failure of the quantum cascade lasers operating at a current density of 5 kA/cm2 and heat-sink temperature of 25°C is expected to be 809 thousand hours.

INTERNATIONAL CONFERENCE ON SEMICONDUCTOR INJECTION LASERS SELCO-87: Determination of the quantum efficiency of InGaAsP/InP double heterostructures from spontaneous emission measurements

NASA Astrophysics Data System (ADS)

Rheinländer, B.; Anton, A.; Heilmann, R.; Oelgart, G.; Gottschalch, V.

1988-11-01

A method was developed for determination of the suitability of epitaxial InGaAsP/InP double heterostructures in fabrication of ridge-waveguide lasers. The method is based on determination of the quantum efficiency of electroluminescence.

Dispersion of TE modes in slab waveguides with reference to double heterostructure semiconductor lasers

NASA Astrophysics Data System (ADS)

Buus, J.

1980-06-01

The group index for TE modes in an asymmetrical slab waveguide is investigated, and a simple analytical expression is derived. It is shown that the product of the phase and group indices is related to the power fraction in each of the three layers of the waveguide. The results are of interest in the analysis of double heterostructure semiconductor lasers. Theoretical and experimental results for lasers emitting at 1.55 microns are compared.

Laser diode bars based on AlGaAs/GaAs quantum-well heterostructures with an efficiency up to 70%

NASA Astrophysics Data System (ADS)

Ladugin, M. A.; Marmalyuk, A. A.; Padalitsa, A. A.; Bagaev, T. A.; Andreev, A. Yu.; Telegin, K. Yu.; Lobintsov, A. V.; Davydova, E. I.; Sapozhnikov, S. M.; Danilov, A. I.; Podkopaev, A. V.; Ivanova, E. B.; Simakov, V. A.

2017-05-01

The results of the development and fabrication of laser diode bars (λ = 800 - 810 nm) based on AlGaAs/GaAs quantum-well heterostructures with a high efficiency are presented. An increase in the internal quantum and external differential efficiencies together with a decrease in the working voltage and the series resistance allowed us to improve the output parameters of the semiconductor laser under quasi-cw pumping. The output power of the laser diode bars with a 5-mm transverse length reached 210 W, and the efficiency was ~70%.

Stress evolution of GaN/AlN heterostructure grown on 6H-SiC substrate by plasma assisted molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Agrawal, M.; Ravikiran, L.; Dharmarasu, N.; Radhakrishnan, K.; Karthikeyan, G. S.; Zheng, Y.

2017-01-01

The stress evolution of GaN/AlN heterostructure grown on 6H-SiC substrate by plasma assisted molecular beam epitaxy (PA-MBE) has been studied. AlN nucleation layer and GaN layer were grown as a function of III/V ratio. GaN/AlN structure is found to form buried cracks when AlN is grown in the intermediate growth regime(III/V˜1)and GaN is grown under N-rich growth regime (III/V<1). The III/V ratio determines the growth mode of the layers that influences the lattice mismatch at the GaN/AlN interface. The lattice mismatch induced interfacial stress at the GaN/AlN interface relaxes by the formation of buried cracks in the structure. Additionally, the stress also relaxes by misorienting the AlN resulting in two misorientations with different tilts. Crack-free layers were obtained when AlN and GaN were grown in the N-rich growth regime (III/V<1) and metal rich growth regime (III/V≥1), respectively. AlGaN/GaN high electron mobility transistor (HEMT) heterostructure was demonstrated on 2-inch SiC that showed good two dimensional electron gas (2DEG) properties with a sheet resistance of 480 Ω/sq, mobility of 1280 cm2/V.s and sheet carrier density of 1×1013 cm-2.

Resonant tunneling modulation in quasi-2D Cu(2)O/SnO(2) p-n horizontal-multi-layer heterostructure for room temperature H(2)S sensor application.

PubMed

Cui, Guangliang; Zhang, Mingzhe; Zou, Guangtian

2013-01-01

Heterostructure material that acts as resonant tunneling system is a major scientific challenge in applied physics. Herein, we report a resonant tunneling system, quasi-2D Cu(2)O/SnO(2) p-n heterostructure multi-layer film, prepared by electrochemical deposition in a quasi-2D ultra-thin liquid layer. By applying a special half-sine deposition potential across the electrodes, Cu(2)O and SnO(2) selectively and periodically deposited according to their reduction potentials. The as-prepared heterostructure film displays excellent sensitivity to H(2)S at room temperature due to the resonant tunneling modulation. Furthermore, it is found that the laser illumination could enhance the gas response, and the mechanism with laser illumination is discussed. It is the first report on gas sensing application of resonant tunneling modulation. Hence, heterostructure material act as resonant tunneling system is believed to be an ideal candidate for further improvement of room temperature gas sensing.

III-nitride nanowire LEDs and diode lasers: monolithic light sources on (001) Si emitting in the 600-1300nm range

NASA Astrophysics Data System (ADS)

Bhattacharya, P.; Hazari, A.; Jahangir, S.

2018-02-01

GaN-based nanowire heterostructure arrays epitaxially grown on (001)Si substrates have unique properties and present the potential to realize useful devices. The active light-emitting region in the nanowire heterostructures are usually InGaN disks, whose composition can be varied to tune the emission wavelength. We have demonstrated light emitting diodes and edgeemitting diode lasers with power outputs 10mW with emission in the 600-1300nm wavelength range. These light sources are therefore useful for a variety of applications, including silicon photonics. Molecular beam epitaxial growth of the nanowire heterostructure arrays on (001)Si substrates and the characteristics of 1.3μm nanowire array edge emitting lasers, guided wave photodiodes and a monolithic photonic integrated circuit designed for 1.3μm operation are described.

Solid State Research, 1975:4

DTIC Science & Technology

1975-11-15

2.8kA/cm for broad- area devices, has been achieved for Ga. In As, _ P /inP double-heterostructure 1 -x x 1 -y y diode lasers emitting ... LIGHT (b) reverse-biasing the p -n~ junction). This should facilitate the fabrication of modulators and switches using electroabsorption and...temperature operation of Ga In As, P /inP double-heterostructure (DH) diode lasers has been achieved. Broad-area devices emitting at 1.1

High power, 1060-nm diode laser with an asymmetric hetero-waveguide

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, T; Zhang, Yu; Hao, E

2015-07-31

By introducing an asymmetric hetero-waveguide into the epitaxial structure of a diode laser, a 6.21-W output is achieved at a wavelength of 1060 nm. A different design in p- and n-confinement, based on optimisation of energy bands, is used to reduce voltage loss and meet the requirement of high power and high wall-plug efficiency. A 1060-nm diode laser with a single quantum well and asymmetric hetero-structure waveguide is fabricated and analysed. Measurement results show that the asymmetric hetero-structure waveguide can be efficiently used for reducing voltage loss and improving the confinement of injection carriers and wall-plug efficiency. (lasers)

Characterization of Si (sub X)Ge (sub 1-x)/Si Heterostructures for Device Applications Using Spectroscopic Ellipsometry

NASA Technical Reports Server (NTRS)

Sieg, R. M.; Alterovitz, S. A.; Croke, E. T.; Harrell, M. J.; Tanner, M.; Wang, K. L.; Mena, R. A.; Young, P. G.

1993-01-01

Spectroscopic ellipsometry (SE) characterization of several complex Si (sub X)Ge (sub 1-x)/Si heterostructures prepared for device fabrication, including structures for heterojunction bipolar transistors (HBT), p-type and n-type heterostructure modulation doped field effect transistors, has been performed. We have shown that SE can simultaneously determine all active layer thicknesses, Si (sub X)Ge (sub 1-x) compositions, and the oxide overlayer thickness, with only a general knowledge of the structure topology needed a priori. The characterization of HBT material included the SE analysis of a Si (sub X)Ge (sub 1-x) layer deeply buried (600 nanometers) under the silicon emitter and cap layers. In the SE analysis of n-type heterostructures, we examined for the first time a silicon layer under tensile strain. We found that an excellent fit can be obtained using optical constants of unstrained silicon to represent the strained silicon conduction layer. We also used SE to measure lateral sample homogeneity, providing quantitative identification of the inhomogeneous layer. Surface overlayers resulting from prior sample processing were also detected and measured quantitatively. These results should allow SE to be used extensively as a non-destructive means of characterizing Si (sub X)Ge (sub 1-x)/Si heterostructures prior to device fabrication and testing.

INTERNATIONAL CONFERENCE ON SEMICONDUCTOR INJECTION LASERS SELCO-87: High-performance 1.3-μm InGaAsP/InP heterostructures formed by two-phase liquid epitaxy

NASA Astrophysics Data System (ADS)

Novotný, J.; Procházková, O.; Šrobár, F.; Zelinka, J.

1988-11-01

A description is given of a two-phase liquid epitaxy method used to grow InGaAsP/InP heterostructures intended for injection lasers emitting in the 1.3-μm range. A study was made of heterostructures of three types: double, with an additional quaternary layer (λ approx 1.1 μm) adjoining the active layer; with two quaternary layers between the active layer and the InP confining layers. The configuration with two flanking quaternary layers was found to be the best from the point of view of the threshold current density, optical output power, and reproducibility.

Fabrication of a terahertz quantum-cascade laser with a double metal waveguide based on multilayer GaAs/AlGaAs heterostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Khabibullin, R. A., E-mail: khabibullin@isvch.ru; Shchavruk, N. V.; Pavlov, A. Yu.

2016-10-15

The Postgrowth processing of GaAs/AlGaAs multilayer heterostructures for terahertz quantumcascade lasers (QCLs) are studied. This procedure includes the thermocompression bonding of In–Au multilayer heterostructures with a doped n{sup +}-GaAs substrate, mechanical grinding, and selective wet etching of the substrate, and dry etching of QCL ridge mesastripes through a Ti/Au metallization mask 50 and 100 μm wide. Reactive-ion-etching modes with an inductively coupled plasma source in a BCl{sub 3}/Ar gas mixture are selected to obtain vertical walls of the QCL ridge mesastripes with minimum Ti/Au mask sputtering.

Imaging and controlling plasmonic interference fields at buried interfaces

NASA Astrophysics Data System (ADS)

Lummen, Tom T. A.; Lamb, Raymond J.; Berruto, Gabriele; Lagrange, Thomas; Dal Negro, Luca; García de Abajo, F. Javier; McGrouther, Damien; Barwick, B.; Carbone, F.

2016-10-01

Capturing and controlling plasmons at buried interfaces with nanometre and femtosecond resolution has yet to be achieved and is critical for next generation plasmonic devices. Here we use light to excite plasmonic interference patterns at a buried metal-dielectric interface in a nanostructured thin film. Plasmons are launched from a photoexcited array of nanocavities and their propagation is followed via photon-induced near-field electron microscopy (PINEM). The resulting movie directly captures the plasmon dynamics, allowing quantification of their group velocity at ~0.3 times the speed of light, consistent with our theoretical predictions. Furthermore, we show that the light polarization and nanocavity design can be tailored to shape transient plasmonic gratings at the nanoscale. This work, demonstrating dynamical imaging with PINEM, paves the way for the femtosecond and nanometre visualization and control of plasmonic fields in advanced heterostructures based on novel two-dimensional materials such as graphene, MoS2, and ultrathin metal films.

Imaging and controlling plasmonic interference fields at buried interfaces

PubMed Central

Lummen, Tom T. A.; Lamb, Raymond J.; Berruto, Gabriele; LaGrange, Thomas; Dal Negro, Luca; García de Abajo, F. Javier; McGrouther, Damien; Barwick, B.; Carbone, F.

2016-01-01

Capturing and controlling plasmons at buried interfaces with nanometre and femtosecond resolution has yet to be achieved and is critical for next generation plasmonic devices. Here we use light to excite plasmonic interference patterns at a buried metal–dielectric interface in a nanostructured thin film. Plasmons are launched from a photoexcited array of nanocavities and their propagation is followed via photon-induced near-field electron microscopy (PINEM). The resulting movie directly captures the plasmon dynamics, allowing quantification of their group velocity at ∼0.3 times the speed of light, consistent with our theoretical predictions. Furthermore, we show that the light polarization and nanocavity design can be tailored to shape transient plasmonic gratings at the nanoscale. This work, demonstrating dynamical imaging with PINEM, paves the way for the femtosecond and nanometre visualization and control of plasmonic fields in advanced heterostructures based on novel two-dimensional materials such as graphene, MoS2, and ultrathin metal films. PMID:27725670

Resonant tunneling modulation in quasi-2D Cu2O/SnO2 p-n horizontal-multi-layer heterostructure for room temperature H2S sensor application

PubMed Central

Cui, Guangliang; Zhang, Mingzhe; Zou, Guangtian

2013-01-01

Heterostructure material that acts as resonant tunneling system is a major scientific challenge in applied physics. Herein, we report a resonant tunneling system, quasi-2D Cu2O/SnO2 p-n heterostructure multi-layer film, prepared by electrochemical deposition in a quasi-2D ultra-thin liquid layer. By applying a special half-sine deposition potential across the electrodes, Cu2O and SnO2 selectively and periodically deposited according to their reduction potentials. The as-prepared heterostructure film displays excellent sensitivity to H2S at room temperature due to the resonant tunneling modulation. Furthermore, it is found that the laser illumination could enhance the gas response, and the mechanism with laser illumination is discussed. It is the first report on gas sensing application of resonant tunneling modulation. Hence, heterostructure material act as resonant tunneling system is believed to be an ideal candidate for further improvement of room temperature gas sensing. PMID:23409241

On-stack two-dimensional conversion of MoS2 into MoO3

NASA Astrophysics Data System (ADS)

Yeoung Ko, Taeg; Jeong, Areum; Kim, Wontaek; Lee, Jinhwan; Kim, Youngchan; Lee, Jung Eun; Ryu, Gyeong Hee; Park, Kwanghee; Kim, Dogyeong; Lee, Zonghoon; Lee, Min Hyung; Lee, Changgu; Ryu, Sunmin

2017-03-01

Chemical transformation of existing two-dimensional (2D) materials can be crucial in further expanding the 2D crystal palette required to realize various functional heterostructures. In this work, we demonstrate a 2D ‘on-stack’ chemical conversion of single-layer crystalline MoS2 into MoO3 with a precise layer control that enables truly 2D MoO3 and MoO3/MoS2 heterostructures. To minimize perturbation of the 2D morphology, a nonthermal oxidation using O2 plasma was employed. The early stage of the reaction was characterized by a defect-induced Raman peak, drastic quenching of photoluminescence (PL) signals and sub-nm protrusions in atomic force microscopy images. As the reaction proceeded from the uppermost layer to the buried layers, PL and optical second harmonic generation signals showed characteristic modulations revealing a layer-by-layer conversion. The plasma-generated 2D oxides, confirmed as MoO3 by x-ray photoelectron spectroscopy, were found to be amorphous but extremely flat with a surface roughness of 0.18 nm, comparable to that of 1L MoS2. The rate of oxidation quantified by Raman spectroscopy decreased very rapidly for buried sulfide layers due to protection by the surface 2D oxides, exhibiting a pseudo-self-limiting behavior. As exemplified in this work, various on-stack chemical transformations can be applied to other 2D materials in forming otherwise unobtainable materials and complex heterostructures, thus expanding the palette of 2D material building blocks.

Laser diode arrays based on AlGaAs/GaAs quantum-well heterostructures with an efficiency up to 62%

NASA Astrophysics Data System (ADS)

Ladugin, M. A.; Marmalyuk, A. A.; Padalitsa, A. A.; Telegin, K. Yu; Lobintsov, A. V.; Sapozhnikov, S. M.; Danilov, A. I.; Podkopaev, A. V.; Simakov, V. A.

2017-08-01

The results of development of quasi-cw laser diode arrays operating at a wavelength of 808 nm with a high efficiency are demonstrated. The laser diodes are based on semiconductor AlGaAs/GaAs quantum-well heterostructures grown by MOCVD. The measured spectral, spatial, electric and power characteristics are presented. The output optical power of the array with an emitting area of 5 × 10 mm is 2.7 kW at a pump current of 100 A, and the maximum efficiency reaches 62%.

Semiconductor Lasers and Their Application in Optical Fiber Communication.

ERIC Educational Resources Information Center

Agrawal, Govind P.

1985-01-01

Working principles and operating characteristics of the extremely compact and highly efficient semiconductor lasers are explained. Topics include: the p-n junction; Fabry-Perot cavity; heterostructure semiconductor lasers; materials; emission characteristics; and single-frequency semiconductor lasers. Applications for semiconductor lasers include…

Role of the electron blocking layer in the graded-index separate confinement heterostructure nitride laser diodes

NASA Astrophysics Data System (ADS)

Bojarska, Agata; Goss, Jakub; Stanczyk, Szymon; Makarowa, Irina; Schiavon, Dario; Czernecki, Robert; Suski, Tadeusz; Perlin, Piotr

2018-04-01

In this work, we investigate the role of the electron blocking layer (EBL) in laser diodes based on a graded index separate confinement heterostructure. We compare two sets of devices with very different EBL aluminum composition (3% and 12%) and design (graded and superlattice). The results of electro-optical characterization of these laser diodes reveal surprisingly modest role of electron blocking layer composition in determination of the threshold current and the differential efficiency values. However, EBL structure influences the operating voltage, which is decreased for devices with lower EBL and superlattice EBL. We observe also the differences in the thermal stability of devices - characteristic temperature is lower for lasers with 3% Al in EBL.

Distinguishing Buried Objects in Extremely Shallow Underground by Frequency Response Using Scanning Laser Doppler Vibrometer

NASA Astrophysics Data System (ADS)

Abe, Touma; Sugimoto, Tsuneyoshi

2010-07-01

A sound wave vibration using a scanning laser Doppler vibrometer are used as a method of exploring and imaging an extremely shallow underground. Flat speakers are used as a vibration source. We propose a method of distinguishing a buried object using a response range of a frequencies corresponding to a vibration velocities. Buried objects (plastic containers, a hollow steel can, an unglazed pot, and a stone) are distinguished using a response range of frequencies. Standardization and brightness imaging are used as methods of discrimination. As a result, it was found that the buried objects show different response ranges of frequencies. From the experimental results, we confirmed the effectiveness of our proposed method.

Depth- and momentum- resolved electronic structure at buried oxide interfaces from standing-wave angle-resolved photoemission

NASA Astrophysics Data System (ADS)

Fadley, Charles

2015-03-01

It is clear that interfaces in complex oxide heterostructures often represent emergent materials that possess surprising properties not associated with the parent oxides, such as two-dimensional electron gases (2DEGs), superconductivity, and magnetism. A detailed knowledge of the composition, atomic structure, and electronic structure through such interfaces is thus critical. Photomission (PES) and angle-resolved photoemission (ARPES) represent techniques of choice for such studies, but have certain limitations in being too surface sensitive and in not being able to focus specifically on buried interfaces or heterostructure layers. In this talk, I will discuss combining two newer elements of PES/ARPES to deal with this challenge: - the use of soft x-rays in the ca. few hundred-to-2000 eV regime, or even into the true hard x-ray regime, to probe more deeply into the structure, and - tailoring of the x-ray intensity profile into a strong standing wave (SW) through reflection from a multilayer heterostructure to provide much enhanced depth resolution. The relative advantages of soft/hard x-ray PES and ARPES and their complementarity to conventional VUV ARPES in the ca. 5-150 eV regime will be considered. As illustrative examples, by combining SW-PES and SW-ARPES, it has been possible to measure for the first time the detailed concentration profiles and momentum-resolved electronic structure at the SrTiO3/La0.67Sr0.33MnO3 interface and to directly measure the depth profile of the 2DEG at SrTiO3/GdTiO3 interfaces. Future directions for such measurements will also be discussed. Supported by US DOE Contract No. DE-AC02-05CH11231, ARO-MURI Grant W911-NF-09-1-0398, and the PALM-APTCOM Project (France).

Multilayer heterostructures for quantum-cascade lasers operating in the terahertz frequency range

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhukov, A. E., E-mail: Zhukale@gmail.com; Cirlin, G. E.; Reznik, R. R.

2016-05-15

The results obtained in a study of the structural and optical properties of GaAs/AlGaAs heterostructures with 228 quantum cascades, grown by molecular-beam epitaxy, and in a simulation of interband optical transitions and transitions between the energy levels of a cascade are presented.

Electronic transport and photovoltaic properties in Bi2Sr2Co2Oyepitaxial heterostructures

NASA Astrophysics Data System (ADS)

Guo, Hai-Zhong; Gu, Lin; Yang, Zhen-Zhong; Wang, Shu-Fang; Fu, Guang-Sheng; Wang, Le; Jin, Kui-Juan; Lu, Hui-Bin; Wang, Can; Ge, Chen; He, Meng; Yang, Guo-Zhen

2013-08-01

Epitaxial heterostructures constructed from the thermoelectric cobalt Bi2Sr2Co2Oy thin films and SrTiO3 as well as SrTi0.993Nb0.007O3 substrates were fabricated by pulsed-laser deposition. The scanning transmission electron microscopy results confirm that the heterostructures are epitaxial, with sharp and coherent interfaces. The temperature-dependent electrical transport properties and the Hall effects were systematically investigated. The Bi2Sr2Co2Oy/SrTi0.993Nb0.007O3 p-n heterostructure exhibits good rectifying current-voltage characteristics over a wide temperature range. A strong photovoltaic effect was observed in the Bi2Sr2Co2Oy/SrTi0.993Nb0.007O3 heterostructure, with the temperature-dependent photovoltage being systematically investigated. The present work shows a great potential of this new heterostructures as photoelectric devices.

Modified Oxygen Defect Chemistry at Transition Metal Oxide Heterostructures Probed by Hard X-ray Photoelectron Spectroscopy and X-ray Diffraction

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen, Yan; Fong, Dillon D.; Herbert, F. William

Transition metal oxide hetero-structures are interesting due to the distinctly different properties that can arise from their interfaces, such as superconductivity, high catalytic activity and magnetism. Oxygen point defects can play an important role at these interfaces in inducing potentially novel properties. The design of oxide hetero-structures in which the oxygen defects are manipulated to attain specific functionalities requires the ability to resolve the state and concentration of local oxygen defects across buried interfaces. In this work, we utilized a novel combination of hard x-ray photoelectron spectroscopy (HAXPES) and high resolution xray diffraction (HRXRD) to probe the local oxygen defectmore » distribution across the buried interfaces of oxide heterolayers. This approach provides a non-destructive way to qualitatively probe locally the oxygen defects in transition metal oxide hetero-structures. We studied two trilayer structures as model systems - the La 0.8Sr 0.2CoO 3-δ/(La 0.5Sr 0.5) 2CoO 4/La 0.8Sr 0.2CoO 3-δ (LSC 113/LSC 214) and the La 0.8Sr 0.2CoO 3-δ/La 2NiO 4+δ/La 0.8Sr 0.2CoO 3-δ (LSC 113/LNO 214) on SrTiO 3(001) single crystal substrates. We found that the oxygen defect chemistry of these transition metal oxides was strongly impacted by the presence of interfaces and the properties of the adjacent phases. Under reducing conditions, the LSC 113 in the LSC 113/LNO 214 tri-layer had less oxygen vacancies than the LSC 113 in the LSC 113/LSC 214 tri-layer and the LSC 113 single phase film. On the other hand, LSC 214 and LNO 214 were more reduced in the two tri-layer structures when in contact with the LSC 113 layer compared to their single phase counterparts. Furthermore, the results point out a potential way to modify the local oxygen defect states at oxide hetero-interfaces.« less

Modified Oxygen Defect Chemistry at Transition Metal Oxide Heterostructures Probed by Hard X-ray Photoelectron Spectroscopy and X-ray Diffraction

DOE PAGES

Chen, Yan; Fong, Dillon D.; Herbert, F. William; ...

2018-04-17

Transition metal oxide hetero-structures are interesting due to the distinctly different properties that can arise from their interfaces, such as superconductivity, high catalytic activity and magnetism. Oxygen point defects can play an important role at these interfaces in inducing potentially novel properties. The design of oxide hetero-structures in which the oxygen defects are manipulated to attain specific functionalities requires the ability to resolve the state and concentration of local oxygen defects across buried interfaces. In this work, we utilized a novel combination of hard x-ray photoelectron spectroscopy (HAXPES) and high resolution xray diffraction (HRXRD) to probe the local oxygen defectmore » distribution across the buried interfaces of oxide heterolayers. This approach provides a non-destructive way to qualitatively probe locally the oxygen defects in transition metal oxide hetero-structures. We studied two trilayer structures as model systems - the La 0.8Sr 0.2CoO 3-δ/(La 0.5Sr 0.5) 2CoO 4/La 0.8Sr 0.2CoO 3-δ (LSC 113/LSC 214) and the La 0.8Sr 0.2CoO 3-δ/La 2NiO 4+δ/La 0.8Sr 0.2CoO 3-δ (LSC 113/LNO 214) on SrTiO 3(001) single crystal substrates. We found that the oxygen defect chemistry of these transition metal oxides was strongly impacted by the presence of interfaces and the properties of the adjacent phases. Under reducing conditions, the LSC 113 in the LSC 113/LNO 214 tri-layer had less oxygen vacancies than the LSC 113 in the LSC 113/LSC 214 tri-layer and the LSC 113 single phase film. On the other hand, LSC 214 and LNO 214 were more reduced in the two tri-layer structures when in contact with the LSC 113 layer compared to their single phase counterparts. Furthermore, the results point out a potential way to modify the local oxygen defect states at oxide hetero-interfaces.« less

Capacitive coupling in hybrid graphene/GaAs nanostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Simonet, Pauline, E-mail: psimonet@phys.ethz.ch; Rössler, Clemens; Krähenmann, Tobias

2015-07-13

Coupled hybrid nanostructures are demonstrated using the combination of lithographically patterned graphene on top of a two-dimensional electron gas (2DEG) buried in a GaAs/AlGaAs heterostructure. The graphene forms Schottky barriers at the surface of the heterostructure and therefore allows tuning the electronic density of the 2DEG. Conversely, the 2DEG potential can tune the graphene Fermi energy. Graphene-defined quantum point contacts in the 2DEG show half-plateaus of quantized conductance in finite bias spectroscopy and display the 0.7 anomaly for a large range of densities in the constriction, testifying to their good electronic properties. Finally, we demonstrate that the GaAs nanostructure canmore » detect charges in the vicinity of the heterostructure's surface. This confirms the strong coupling of the hybrid device: localized states in the graphene ribbon could, in principle, be probed by the underlying confined channel. The present hybrid graphene/GaAs nanostructures are promising for the investigation of strong interactions and coherent coupling between the two fundamentally different materials.« less

Amplified emission and modified spectral features in an opal hetero-structure mediated by passive defect mode localization

NASA Astrophysics Data System (ADS)

Rout, Dipak; Kumar, Govind; Vijaya, R.

2018-01-01

A photonic crystal hetero-structure consisting of a passive planar defect of SiO2 thin film sandwiched between two identical opals grown by inward growing self-assembly method using Rhodamine-B dye-doped polystyrene microspheres is studied for the characteristics of dye emission. The optical properties and the defect mode characteristics of the hetero-structure are studied from the reflection and transmission measurements. Laser-induced fluorescence from the hetero-structure showed amplified and spectrally narrowed emission compared to the photonic crystal emphasizing the role of the defect mode and distributed feedback. The enhanced emission is also complemented by the reduction in fluorescence decay time in the case of the hetero-structure in comparison to the 3D photonic crystals.

Degradation sources in GaAs--AlGaAs double-heterostructure lasers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ito, R.; Nakashima, H.; Kishino, S.

1975-07-01

Several sources of the dark-line defect (DLD) that causes rapid degradation of GaAs-AlGaAs double-heterostructure (DH) lasers have been identified by means of photoluminescence (PL) topography and a laser-induced degradation technique. All the sources that have been identified correspond to crystal defects, among which dark-spot defects (DSD) that are native to as-grown wafers are found to be most important. The growth and propagation processes of DLDs and DSDs have also been investigated. These defects are found to be highly mobile under high-intensity laser pumping. The correlation between the substrate dislocations and the DSDs has been examined by etching and x-ray topography.more » Although most DSDs correspond to etch-pits in epilayers, they are not always correlated with substrate dislocations. (auth)« less

Electroluminescence of ZnO-based semiconductor heterostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Novodvorskii, O A; Lotin, A A; Panchenko, Vladislav Ya

2011-01-31

Using pulsed laser deposition, we have grown n-ZnO/p-GaN, n-ZnO/i-ZnO/p-GaN and n-ZnO/n-Mg{sub 0.2}Zn{sub 0.8}O/i-Cd{sub 0.2}Zn{sub 0.8}O/p-GaN light-emitting diode (LED) heterostructures with peak emission wavelengths of 495, 382 and 465 nm and threshold current densities (used in electroluminescence measurements) of 1.35, 2, and 0.48 A cm{sup -2}, respectively. Because of the spatial carrier confinement, the n-ZnO/n-Mg{sub 0.2}Zn{sub 0.8}O/i-Cd{sub 0.2}Zn{sub 0.8}O/p-GaN double heterostructure LED offers a higher electroluminescence intensity and lower electroluminescence threshold in comparison with the n-ZnO/p-GaN and n-ZnO/i-ZnO/p-GaN LEDs. (lasers)

Method of making an InAsSb/InAsSbP diode lasers

DOEpatents

Razeghi, Manijeh

1997-01-01

InAsSb/InAsSbP/InAs Double Heterostructures (DH) and Separate Confinement Heterostructure Multiple Quantum Well (SCH-MQW) structures are taught wherein the ability to tune to a specific wavelength within 3 .mu.m to 5 .mu.m is possible by varying the ratio of As:Sb in the active layer.

Laser-induced acoustic imaging of underground objects

NASA Astrophysics Data System (ADS)

Li, Wen; DiMarzio, Charles A.; McKnight, Stephen W.; Sauermann, Gerhard O.; Miller, Eric L.

1999-02-01

This paper introduces a new demining technique based on the photo-acoustic interaction, together with results from photo- acoustic experiments. We have buried different types of targets (metal, rubber and plastic) in different media (sand, soil and water) and imaged them by measuring reflection of acoustic waves generated by irradiation with a CO2 laser. Research has been focused on the signal acquisition and signal processing. A deconvolution method using Wiener filters is utilized in data processing. Using a uniform spatial distribution of laser pulses at the ground's surface, we obtained 3D images of buried objects. The images give us a clear representation of the shapes of the underground objects. The quality of the images depends on the mismatch of acoustic impedance of the buried objects, the bandwidth and center frequency of the acoustic sensors and the selection of filter functions.

Controlling astigmatism and polarization in a stripe heterojunction laser

DOE Office of Scientific and Technical Information (OSTI.GOV)

Boroshnev, A.V.; Gorshkova, O.A.; Kobyakova, M.S.

1985-02-01

It is shown that it is possible to change the waveguide properties of a heterojunction laser and to control its optical characteristics in a single heterostructure fabricated on a substrate with a terraced profile. (AIP)

Observing Imperfection in Atomic Interfaces for van der Waals Heterostructures.

PubMed

Rooney, Aidan P; Kozikov, Aleksey; Rudenko, Alexander N; Prestat, Eric; Hamer, Matthew J; Withers, Freddie; Cao, Yang; Novoselov, Kostya S; Katsnelson, Mikhail I; Gorbachev, Roman; Haigh, Sarah J

2017-09-13

Vertically stacked van der Waals heterostructures are a lucrative platform for exploring the rich electronic and optoelectronic phenomena in two-dimensional materials. Their performance will be strongly affected by impurities and defects at the interfaces. Here we present the first systematic study of interfaces in van der Waals heterostructure using cross-sectional scanning transmission electron microscope (STEM) imaging. By measuring interlayer separations and comparing these to density functional theory (DFT) calculations we find that pristine interfaces exist between hBN and MoS 2 or WS 2 for stacks prepared by mechanical exfoliation in air. However, for two technologically important transition metal dichalcogenide (TMDC) systems, MoSe 2 and WSe 2 , our measurement of interlayer separations provide the first evidence for impurity species being trapped at buried interfaces with hBN interfaces that are flat at the nanometer length scale. While decreasing the thickness of encapsulated WSe 2 from bulk to monolayer we see a systematic increase in the interlayer separation. We attribute these differences to the thinnest TMDC flakes being flexible and hence able to deform mechanically around a sparse population of protruding interfacial impurities. We show that the air sensitive two-dimensional (2D) crystal NbSe 2 can be fabricated into heterostructures with pristine interfaces by processing in an inert-gas environment. Finally we find that adopting glovebox transfer significantly improves the quality of interfaces for WSe 2 compared to processing in air.

Method of making an InAsSb/InAsSbP diode lasers

DOEpatents

Razeghi, M.

1997-08-19

InAsSb/InAsSbP/InAs Double Heterostructures (DH) and Separate Confinement Heterostructure Multiple Quantum Well (SCH-MQW) structures are taught wherein the ability to tune to a specific wavelength within 3 {micro}m to 5 {micro}m is possible by varying the ratio of As:Sb in the active layer. 9 figs.

Exceptional cracking behavior in H-implanted Si/B-doped Si0.70Ge0.30/Si heterostructures

NASA Astrophysics Data System (ADS)

Chen, Da; Wang, Dadi; Chang, Yongwei; Li, Ya; Ding, Rui; Li, Jiurong; Chen, Xiao; Wang, Gang; Guo, Qinglei

2018-01-01

The cracking behavior in H-implanted Si/B-doped Si0.70Ge0.30/Si structures after thermal annealing was investigated. The crack formation position is found to closely correlate with the thickness of the buried Si0.70Ge0.30 layer. For H-implanted Si containing a buried 3-nm-thick B-doped Si0.70Ge0.30 layer, localized continuous cracking occurs at the interfaces on both sides of the Si0.70Ge0.30 interlayer. Once the thickness of the buried Si0.70Ge0.30 layer increases to 15 and 70 nm, however, a continuous sharp crack is individually observed along the interface between the Si substrate and the B-doped Si0.70Ge0.30 interlayer. We attribute this exceptional cracking behavior to the existence of shear stress on both sides of the buried Si0.70Ge0.30 layer and the subsequent trapping of hydrogen, which leads to a crack in a well-controlled manner. This work may pave the way for high-quality Si or SiGe membrane transfer in a feasible manner, thus expediting its potential applications to ultrathin silicon-on-insulator (SOI) or silicon-germanium-on-insulator (SGOI) production.

Growth and characterization of GaAs/Al/GaAs heterostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bhattacharya, P.; Oh, J.E.; Singh, J.

Theoretical and experimental aspects of the growth of GaAs/Al/GaAs heterostructures have been investigated. In these heterostructures the GaAs on top of the buried metal layer is grown by migration-enhanced epitaxy (MEE) at low temperatures (200 and 400 {degree}C) to provide a kinetic barrier to the outdiffusion of Al during superlayer growth. The crystallinity and orientation of the Al film itself deposited on (100) GaAs at {approx}0 {degree}C was studied by transmission electron diffraction, dark-field imaging, and x-ray diffraction measurements. It is found that the Al growth is polycrystalline with a grain size {approx}60 A and the preferred growth orientation ismore » (111), which may be textured in plane but oriented out of plane. The quality of the GaAs superlayer grown on top of Al by MEE is very sensitive to the growth temperature. The layer grown at 400 {degree}C has good structural and optical quality, but is accompanied by considerable outdiffusion of Al at the Al-GaAs heterointerface. At 200 {degree}C, where the interface has good structural integrity, the superlayer exhibits twinning and no luminescence is observed.« less

Microstructures and growth mechanisms of GaN films epitaxially grown on AlN/Si hetero-structures by pulsed laser deposition at different temperatures.

PubMed

Wang, Wenliang; Yang, Weijia; Lin, Yunhao; Zhou, Shizhong; Li, Guoqiang

2015-11-13

2 inch-diameter GaN films with homogeneous thickness distribution have been grown on AlN/Si(111) hetero-structures by pulsed laser deposition (PLD) with laser rastering technique. The surface morphology, crystalline quality, and interfacial property of as-grown GaN films are characterized in detail. By optimizing the laser rastering program, the ~300 nm-thick GaN films grown at 750 °C show a root-mean-square (RMS) thickness inhomogeneity of 3.0%, very smooth surface with a RMS surface roughness of 3.0 nm, full-width at half-maximums (FWHMs) for GaN(0002) and GaN(102) X-ray rocking curves of 0.7° and 0.8°, respectively, and sharp and abrupt AlN/GaN hetero-interfaces. With the increase in the growth temperature from 550 to 850 °C, the surface morphology, crystalline quality, and interfacial property of as-grown ~300 nm-thick GaN films are gradually improved at first and then decreased. Based on the characterizations, the corresponding growth mechanisms of GaN films grown on AlN/Si hetero-structures by PLD with various growth temperatures are hence proposed. This work would be beneficial to understanding the further insight of the GaN films grown on Si(111) substrates by PLD for the application of GaN-based devices.

Demonstration and properties of a planar heterojunction bipolar transistor with lateral current flow

NASA Astrophysics Data System (ADS)

Thornton, Robert L.; Mosby, William J.; Chung, Harlan F.

1989-10-01

The authors present fabrication techniques and device performance for a novel transistor structure, the lateral heterojunction bipolar transistor. The lateral heterojunctions are formed by impurity-induced disordering of a GaAs base layer sandwiched between two AlGaAs layers. These transistor structures exhibit current gains of 14 for base widths of 0.74 micron. Transistor action in this device occurs parallel to the surface of the device structure. The active base region of the structure is completely submerged, resulting in a reduction of surface recombination as a mechanism for gain reduction in the device. Impurity-induced disordering is used to widen the bandgap of the alloy in the emitter and collector, resulting in an improvement of the emitter injection efficiency. Since the device is based entirely on a surface diffusion process, the device is completely planar and has no steps involving etching of the III-V alloy material. These advantages lead this device to be considered as a candidate for optoelectronic integration applications. The transistor device functions as a buried heterostructure laser, with a threshold current as low as 6 mA for a 1.4-micron stripe.

Nonlinear Laser Spectroscopy Studies of Semiconductor Heterostructures

DTIC Science & Technology

1993-01-14

AGENCY NAME(S) AND AODOAVSS(E) IL. s9oN5ISMONOOUU AFOSR/NE AGOK 4gkT NUSeA 110 Duncan Avenue Suite B115 Bolling AFB DC 20332-0001 Howard Schlossberg...Quantum Well Laser," Conference on Quantum Electronics and Laser Science (QELS󈨡). Min Jiang, ttailin Wang, Roberto Merlin, D.G. Steel, "Nonlinear

Passive and active mid-infrared semiconductor nanostructures: Three-dimensional metamaterials and high wall plug efficiency quantum cascade lasers

NASA Astrophysics Data System (ADS)

Hoffman, Anthony J.

Every instant, light and matter are interacting in ways that shape the world around us. This dissertation examines the interaction of mid-infrared light with stacks of thin semiconductor layers. The work is divided into two parts: mid-infrared metamaterials and high wall plug efficiency (WPE) Quantum Cascade (QC) lasers. The mid-infrared metamaterials represent an entirely new class of material and have great potential for enabling highly-desired applications such as sub-diffraction imaging, confinement, and waveguiding. High WPE QC lasers greatly enhance the commercial feasibility of sensing, infrared countermeasures and free-space infrared communications. The first part of this dissertation describes the first three-dimensional, optical metamaterial. The all-semiconductor metamaterial is based on a strongly anisotropic dielectric function and exhibits negative refraction for a large bandwidth in the mid-infrared. The underlying theory of strongly anisotropic metamaterials is discussed, detailed characterization of several metamaterials is presented, and a macroscopic beam experiment is employed to demonstrate negative refraction. A detailed study of waveguides with strongly anisotropic cores is also presented and the low-order mode cutoff for such left-handed waveguides is observed. The second part of this dissertation discusses improvements in QC laser WPE through improved processing, packaging, and design. Devices using conventional QC design strategies processed as buried heterostructures operate with 5% WPE at room temperature in continuous wave mode, a significant improvement over previous generation devices. To further improve WPE, QC lasers based on ultra-strong coupling between the injector and upper-laser levels are designed and characterized. These devices operate with nearly 50% pulsed WPE---a true milestone for QC technology. A new type of QC laser design incorporating heterogeneous injector regions to reduce the voltage defect and thus improve WPE is also presented. Optimized devices exhibit efficiencies in excess of 30% at cryogenic temperatures. Finally, a new measurement technique to characterize lasers in continuous wave operation is described in detail. The technique is used to measure the instantaneous threshold, active core heating, device thermal resistance, and laser current efficiency as well as determine the cause of light power roll-over. This new characterization technique allows for improved understanding of QC lasers and further improvements in device performance.

Constructing oxide interfaces and heterostructures by atomic layer-by-layer laser molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Lei, Qingyu; Golalikhani, Maryam; Davidson, Bruce A.; Liu, Guozhen; Schlom, Darrell G.; Qiao, Qiao; Zhu, Yimei; Chandrasena, Ravini U.; Yang, Weibing; Gray, Alexander X.; Arenholz, Elke; Farrar, Andrew K.; Tenne, Dmitri A.; Hu, Minhui; Guo, Jiandong; Singh, Rakesh K.; Xi, Xiaoxing

2017-12-01

Advancements in nanoscale engineering of oxide interfaces and heterostructures have led to discoveries of emergent phenomena and new artificial materials. Combining the strengths of reactive molecular-beam epitaxy and pulsed-laser deposition, we show here, with examples of Sr1+xTi1-xO3+δ, Ruddlesden-Popper phase Lan+1NinO3n+1 (n = 4), and LaAl1+yO3(1+0.5y)/SrTiO3 interfaces, that atomic layer-by-layer laser molecular-beam epitaxy significantly advances the state of the art in constructing oxide materials with atomic layer precision and control over stoichiometry. With atomic layer-by-layer laser molecular-beam epitaxy we have produced conducting LaAlO3/SrTiO3 interfaces at high oxygen pressures that show no evidence of oxygen vacancies, a capability not accessible by existing techniques. The carrier density of the interfacial two-dimensional electron gas thus obtained agrees quantitatively with the electronic reconstruction mechanism.

Rocksalt nitride metal/semiconductor superlattices: A new class of artificially structured materials

NASA Astrophysics Data System (ADS)

Saha, Bivas; Shakouri, Ali; Sands, Timothy D.

2018-06-01

Artificially structured materials in the form of superlattice heterostructures enable the search for exotic new physics and novel device functionalities, and serve as tools to push the fundamentals of scientific and engineering knowledge. Semiconductor heterostructures are the most celebrated and widely studied artificially structured materials, having led to the development of quantum well lasers, quantum cascade lasers, measurements of the fractional quantum Hall effect, and numerous other scientific concepts and practical device technologies. However, combining metals with semiconductors at the atomic scale to develop metal/semiconductor superlattices and heterostructures has remained a profoundly difficult scientific and engineering challenge. Though the potential applications of metal/semiconductor heterostructures could range from energy conversion to photonic computing to high-temperature electronics, materials challenges primarily had severely limited progress in this pursuit until very recently. In this article, we detail the progress that has taken place over the last decade to overcome the materials engineering challenges to grow high quality epitaxial, nominally single crystalline metal/semiconductor superlattices based on transition metal nitrides (TMN). The epitaxial rocksalt TiN/(Al,Sc)N metamaterials are the first pseudomorphic metal/semiconductor superlattices to the best of our knowledge, and their physical properties promise a new era in superlattice physics and device engineering.

Linear and nonlinear optical properties in an asymmetric double quantum well under intense laser field: Effects of applied electric and magnetic fields

NASA Astrophysics Data System (ADS)

Yesilgul, U.; Al, E. B.; Martínez-Orozco, J. C.; Restrepo, R. L.; Mora-Ramos, M. E.; Duque, C. A.; Ungan, F.; Kasapoglu, E.

2016-08-01

In the present study, the effects of electric and magnetic fields on the linear and third-order nonlinear optical absorption coefficients and relative change of the refractive index in asymmetric GaAs/GaAlAs double quantum wells under intense laser fields are theoretically investigated. The electric field is oriented along the growth direction of the heterostructure while the magnetic field is taken in-plane. The intense laser field is linear polarization along the growth direction. Our calculations are made using the effective-mass approximation and the compact density-matrix approach. Intense laser effects on the system are investigated with the use of the Floquet method with the consequent change in the confinement potential of heterostructures. Our results show that the increase of the electric and magnetic fields blue-shifts the peak positions of the total absorption coefficient and of the total refractive index while the increase of the intense laser field firstly blue-shifts the peak positions and later results in their red-shifting.

Freedom from band-gap slavery: from diode lasers to quantum cascade lasers

NASA Astrophysics Data System (ADS)

Capasso, Federico

2010-02-01

Semiconductor heterostructure lasers, for which Alferov and Kromer received part of the Nobel Prize in Physics in 2000, are the workhorse of technologies such as optical communications, optical recording, supermarket scanners, laser printers and fax machines. They exhibit high performance in the visible and near infrared and rely for their operation on electrons and holes emitting photons across the semiconductor bandgap. This mechanism turns into a curse at longer wavelengths (mid-infrared) because as the bandgap, shrinks laser operation becomes much more sensitive to temperature, material defects and processing. Quantum Cascade Laser (QCL), invented in 1994, rely on a radically different process for light emission. QCLs are unipolar devices in which electrons undergo transitions between quantum well energy levels and are recycled through many stages emitting a cascade of photons. Thus by suitable tailoring of the layers' thickness, using the same heterostructure material, they can lase across the molecular fingerprint region from 3 to 25 microns and beyond into the far-infrared and submillimiter wave spectrum. High power cw room temperature QCLs and QCLs with large continuous single mode tuning range have found many applications (infrared countermeasures, spectroscopy, trace gas analysis and atmospheric chemistry) and are commercially available. )

Scattering (stochastic) recoupling of a coupled ten-stripe AlGaAs-GaAs-InGaAs quantum-well heterostructure laser

NASA Astrophysics Data System (ADS)

Kellogg, D. A.; Holonyak, N.

2001-04-01

Data are presented on coupled ten-stripe AlGaAs-GaAs-InGaAs quantum well heterostructure (QWH) lasers recoupled stochastically at the cleaved end mirrors. Recoupling of neighboring elements of a ten-stripe laser is accomplished by the scattering (random feedback) afforded by applying ˜10-μm-diam Al powder or 0.3 μm α-Al2O3 polishing compound in microscopy immersion oil or in epoxy at the cleaved ends (mirrors). Data on QWH samples with the end mirrors coated with the scatterer (Al or Al2O3 powder in "liquid") exhibit spectral and far-field broadening, as well as increased laser threshold because of the reduced cavity Q. Single mode operation is possible with the conventional evanescent wave coupling of the ten-stripe QWH and is destroyed, even the laser operation itself, with the scattering recoupling (dephasing) at the end mirrors, which is reversible (removable). The narrow ten-stripe QWH laser with strong end-mirror scattering, a long amplifier with random feedback, indicates that a photopumped III-V or II-VI powder (a random "wall" cavity) has little or no merit.

Electron-lattice energy relaxation in laser-excited thin-film Au-insulator heterostructures studied by ultrafast MeV electron diffraction.

PubMed

Sokolowski-Tinten, K; Shen, X; Zheng, Q; Chase, T; Coffee, R; Jerman, M; Li, R K; Ligges, M; Makasyuk, I; Mo, M; Reid, A H; Rethfeld, B; Vecchione, T; Weathersby, S P; Dürr, H A; Wang, X J

2017-09-01

We apply time-resolved MeV electron diffraction to study the electron-lattice energy relaxation in thin film Au-insulator heterostructures. Through precise measurements of the transient Debye-Waller-factor, the mean-square atomic displacement is directly determined, which allows to quantitatively follow the temporal evolution of the lattice temperature after short pulse laser excitation. Data obtained over an extended range of laser fluences reveal an increased relaxation rate when the film thickness is reduced or the Au-film is capped with an additional insulator top-layer. This behavior is attributed to a cross-interfacial coupling of excited electrons in the Au film to phonons in the adjacent insulator layer(s). Analysis of the data using the two-temperature-model taking explicitly into account the additional energy loss at the interface(s) allows to deduce the relative strength of the two relaxation channels.

Electron-lattice energy relaxation in laser-excited thin-film Au-insulator heterostructures studied by ultrafast MeV electron diffraction

PubMed Central

Sokolowski-Tinten, K.; Shen, X.; Zheng, Q.; Chase, T.; Coffee, R.; Jerman, M.; Li, R. K.; Ligges, M.; Makasyuk, I.; Mo, M.; Reid, A. H.; Rethfeld, B.; Vecchione, T.; Weathersby, S. P.; Dürr, H. A.; Wang, X. J.

2017-01-01

We apply time-resolved MeV electron diffraction to study the electron-lattice energy relaxation in thin film Au-insulator heterostructures. Through precise measurements of the transient Debye-Waller-factor, the mean-square atomic displacement is directly determined, which allows to quantitatively follow the temporal evolution of the lattice temperature after short pulse laser excitation. Data obtained over an extended range of laser fluences reveal an increased relaxation rate when the film thickness is reduced or the Au-film is capped with an additional insulator top-layer. This behavior is attributed to a cross-interfacial coupling of excited electrons in the Au film to phonons in the adjacent insulator layer(s). Analysis of the data using the two-temperature-model taking explicitly into account the additional energy loss at the interface(s) allows to deduce the relative strength of the two relaxation channels. PMID:28795080

Electrically Injected UV-Visible Nanowire Lasers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, George T.; Li, Changyi; Li, Qiming

2015-09-01

There is strong interest in minimizing the volume of lasers to enable ultracompact, low-power, coherent light sources. Nanowires represent an ideal candidate for such nanolasers as stand-alone optical cavities and gain media, and optically pumped nanowire lasing has been demonstrated in several semiconductor systems. Electrically injected nanowire lasers are needed to realize actual working devices but have been elusive due to limitations of current methods to address the requirement for nanowire device heterostructures with high material quality, controlled doping and geometry, low optical loss, and efficient carrier injection. In this project we proposed to demonstrate electrically injected single nanowire lasersmore » emitting in the important UV to visible wavelengths. Our approach to simultaneously address these challenges is based on high quality III-nitride nanowire device heterostructures with precisely controlled geometries and strong gain and mode confinement to minimize lasing thresholds, enabled by a unique top-down nanowire fabrication technique.« less

Microstructures and growth mechanisms of GaN films epitaxially grown on AlN/Si hetero-structures by pulsed laser deposition at different temperatures

PubMed Central

Wang, Wenliang; Yang, Weijia; Lin, Yunhao; Zhou, Shizhong; Li, Guoqiang

2015-01-01

2 inch-diameter GaN films with homogeneous thickness distribution have been grown on AlN/Si(111) hetero-structures by pulsed laser deposition (PLD) with laser rastering technique. The surface morphology, crystalline quality, and interfacial property of as-grown GaN films are characterized in detail. By optimizing the laser rastering program, the ~300 nm-thick GaN films grown at 750 °C show a root-mean-square (RMS) thickness inhomogeneity of 3.0%, very smooth surface with a RMS surface roughness of 3.0 nm, full-width at half-maximums (FWHMs) for GaN(0002) and GaN(102) X-ray rocking curves of 0.7° and 0.8°, respectively, and sharp and abrupt AlN/GaN hetero-interfaces. With the increase in the growth temperature from 550 to 850 °C, the surface morphology, crystalline quality, and interfacial property of as-grown ~300 nm-thick GaN films are gradually improved at first and then decreased. Based on the characterizations, the corresponding growth mechanisms of GaN films grown on AlN/Si hetero-structures by PLD with various growth temperatures are hence proposed. This work would be beneficial to understanding the further insight of the GaN films grown on Si(111) substrates by PLD for the application of GaN-based devices. PMID:26563573

Preparation and characterization of BiFeO3/La0.7Sr0.3MnO3 heterostructure grown on SrTiO3 substrate

NASA Astrophysics Data System (ADS)

Zhao, Chenwei; Zhou, Chaochao; Chen, Changle

2017-09-01

In this paper, BiFeO3/La0.7Sr0.3MnO3 heterostructure is fabricated on the SrTiO (100) substrate using the pulsed laser deposition method (PLD). Magnetization hystersis loops of the BiFeO3/La0.7Sr0.3MnO3 heterostructure are obtained at 300 K and 80 K. The heterostructure exhibits evident ferromagnetic characteristic at both room temperature and 80 K. At 80 K, magnetization of the heterostructure is stronger than room temperature magnetic measure. The temperature dependence of resistance of the heterostructure with different currents is also studied. With different currents, there appears to be a peak resistance about 180 K. When I is 50 uA, ΔR is 68.4%. And when I is 100 uA, ΔR is 79.3%. The BiFeO3/La0.7Sr0.3MnO3 heterostructure exhibits a positive colossal magnetoresistance (MR) effect over a temperature range of 80-300 K. In our heterostructure, maximum magnetic resistance appears in 210 K, and MR = 44.34%. Mechanism analysis of the leakage current at room temperature shows that the leakage current is the interface-limited Schottky emission, but not dominated by the Poole-Frenkel emission or SCLC.

Growth and properties of silicon heterostructures with buried nanosize Mg2Si clusters

NASA Astrophysics Data System (ADS)

Galkin, N. G.; Galkin, K. N.

2005-06-01

The technology of solid-phase growth of nanosize islands of magnesium suicide on Si (111) 7x7 with narrow distributions of lateral size and height (60 - 80 and 5 - 7 nanometers, respectively) and density of up to 2x 109 sm-2 is proposed. A 20-50 nm thick Si layer has been grown upon these islands. Basing on the data of AES, EELS, AFM and JR spectroscopy, a conclusion is made that the Mg2Si islands remain in depth of the Si layer. The suggestion is made that sizes, density and crystal structure of the buried magnesium suicide clusters preserves. It is shown, that the system of three as-grown layers of buried clusters has smoother surface than the one layer system. The contribution of the Mg2Si clusters into the dielectric function is observed at the energy 0.8-1.2 eV, it is maximal if the clusters are localized on the silicon surface. It is shown, that with increase of the number of Mg2Si cluster layers their contribution increases into the effective number of electrons per a unit cell and effective dielectric function of the sample.

INTERNATIONAL CONFERENCE ON SEMICONDUCTOR INJECTION LASERS SELCO-87: Calculation of the yield of fault-free laser diodes from the characteristics of the (100)InP substrate material used in epitaxial double heterostructures

NASA Astrophysics Data System (ADS)

Baerwolff, A.; Enders, P.; Knauer, A.; Linke, D.; Zeimer, U.

1988-11-01

It is shown that the yield of fault-free laser diodes is related to the density and distribution of dislocations in the substrate. A method is described for visualization of etch pits and of their relationship to defects in the substrate.

InGaAsN/GaAs Heterostructures for Long-Wavelength Light-Emitting Devices

DTIC Science & Technology

2000-06-23

vertical cavity surface emitting lasers ( VCSELs ) on GaAs is expected to be possible by... molecular beam epitaxy using an RF plasma-source. Broad area and ridge waveguide laser structures based on such QWs exhibit performance that can...work with GaAs/AlAs DBR-mirrors is expected to lead to novel vertical cavity lasers for optical fiber communication systems. Acknowledgement

Vertical-cavity in-plane heterostructures: Physics and applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Taghizadeh, Alireza; Mørk, Jesper; Chung, Il-Sug, E-mail: ilch@fotonik.dtu.dk

2015-11-02

We show that in-plane (lateral) heterostructures realized in vertical cavities with high contrast grating reflectors can be used to significantly modify the anisotropic dispersion curvature, also interpreted as the photon effective mass. This design freedom enables exotic configurations of heterostructures and many interesting applications. The effects of the anisotropic photon effective mass on the mode confinement, mode spacing, and transverse modes are investigated. As a possible application, the method of boosting the speed of diode lasers by engineering the photon-photon resonance is discussed. Based on this platform, we propose a system of two laterally coupled cavities, which shows the breakingmore » of parity-time symmetry in vertical cavity structures.« less

Millimeter-wave and optoelectronic applications of heterostructure integrated circuits

NASA Technical Reports Server (NTRS)

Pavlidis, Dimitris

1991-01-01

The properties are reviewed of heterostructure devices for microwave-monolithic-integrated circuits (MMICs) and optoelectronic integrated circuits (OICs). Specific devices examined include lattice-matched and pseudomorphic InAlAs/InGaAs high-electron mobility transistors (HEMTs), mixer/multiplier diodes, and heterojunction bipolar transistors (HBTs) developed with a number of materials. MMICs are reviewed that can be employed for amplification, mixing, and signal generation, and receiver/transmitter applications are set forth for OICs based on GaAs and InP heterostructure designs. HEMTs, HBTs, and junction-FETs can be utilized in combination with PIN, MSM, and laser diodes to develop novel communication systems based on technologies that combine microwave and photonic capabilities.

Millimeter-wave and optoelectronic applications of heterostructure integrated circuits

NASA Astrophysics Data System (ADS)

Pavlidis, Dimitris

1991-02-01

The properties are reviewed of heterostructure devices for microwave-monolithic-integrated circuits (MMICs) and optoelectronic integrated circuits (OICs). Specific devices examined include lattice-matched and pseudomorphic InAlAs/InGaAs high-electron mobility transistors (HEMTs), mixer/multiplier diodes, and heterojunction bipolar transistors (HBTs) developed with a number of materials. MMICs are reviewed that can be employed for amplification, mixing, and signal generation, and receiver/transmitter applications are set forth for OICs based on GaAs and InP heterostructure designs. HEMTs, HBTs, and junction-FETs can be utilized in combination with PIN, MSM, and laser diodes to develop novel communication systems based on technologies that combine microwave and photonic capabilities.

Controllable positive exchange bias via redox-driven oxygen migration

DOE PAGES

Gilbert, Dustin A.; Olamit, Justin; Dumas, Randy K.; ...

2016-03-21

We report that ionic transport in metal/oxide heterostructures offers a highly effective means to tailor material properties via modification of the interfacial characteristics. However, direct observation of ionic motion under buried interfaces and demonstration of its correlation with physical properties has been challenging. Using the strong oxygen affinity of gadolinium, we design a model system of Gd xFe 1-x/NiCoO bilayer films, where the oxygen migration is observed and manifested in a controlled positive exchange bias over a relatively small cooling field range. The exchange bias characteristics are shown to be the result of an interfacial layer of elemental nickel andmore » cobalt, a few nanometres in thickness, whose moments are larger than expected from uncompensated NiCoO moments. This interface layer is attributed to a redox-driven oxygen migration from NiCoO to the gadolinium, during growth or soon after. Ultimately, these results demonstrate an effective path to tailoring the interfacial characteristics and interlayer exchange coupling in metal/oxide heterostructures.« less

Silicon-based silicon–germanium–tin heterostructure photonics

PubMed Central

Soref, Richard

2014-01-01

The wavelength range that extends from 1550 to 5000 nm is a new regime of operation for Si-based photonic and opto-electronic integrated circuits. To actualize the new chips, heterostructure active devices employing the ternary SiGeSn alloy are proposed in this paper. Foundry-based monolithic integration is described. Opportunities and challenges abound in creating laser diodes, optical amplifiers, light-emitting diodes, photodetectors, modulators, switches and a host of high-performance passive infrared waveguided components. PMID:24567479

AlGaAs-GaAs quantum-well lasers for direct solar photopumping

NASA Technical Reports Server (NTRS)

Unnikrishnan, Sreenath; Anderson, Neal G.

1991-01-01

The paper theoretically examines the solar power requirements for low-threshold AlGaAs-GaAs quantum-well lasers directly photopumped by focused sunlight. A model of separate-confinement quantum-well-heterostructure (SCQWH) lasers was developed, which explicitly treats absorption and transport phenomena relevant to solar pumping. The model was used to identify separate-confinement single-quantum-well laser structures which should operate at photoexcitation intensities of less than 10,000 suns.

An automated design process for short pulse laser driven opacity experiments

DOE PAGES

Martin, M. E.; London, R. A.; Goluoglu, S.; ...

2017-12-21

Stellar-relevant conditions can be reached by heating a buried layer target with a short pulse laser. Previous design studies of iron buried layer targets found that plasma conditions are dominantly controlled by the laser energy while the accuracy of the inferred opacity is limited by tamper emission and optical depth effects. In this paper, we developed a process to simultaneously optimize laser and target parameters to meet a variety of design goals. We explored two sets of design cases: a set focused on conditions relevant to the upper radiative zone of the sun (electron temperatures of 200 to 400 eVmore » and densities greater than 1/10 of solid density) and a set focused on reaching temperatures consistent with deep within the radiative zone of the sun (500 to 1000 eV) at a fixed density. We found optimized designs for iron targets and determined that the appropriate dopant, for inferring plasma conditions, depends on the goal temperature: magnesium for up to 300 eV, aluminum for 300 to 500 eV, and sulfur for 500 to 1000 eV. The optimal laser energy and buried layer thickness increase with goal temperature. The accuracy of the inferred opacity is limited to between 11% and 31%, depending on the design. Finally, overall, short pulse laser heated iron experiments reaching stellar-relevant conditions have been designed with consideration of minimizing tamper emission and optical depth effects while meeting plasma condition and x-ray emission goals.« less

An automated design process for short pulse laser driven opacity experiments

DOE Office of Scientific and Technical Information (OSTI.GOV)

Martin, M. E.; London, R. A.; Goluoglu, S.

Stellar-relevant conditions can be reached by heating a buried layer target with a short pulse laser. Previous design studies of iron buried layer targets found that plasma conditions are dominantly controlled by the laser energy while the accuracy of the inferred opacity is limited by tamper emission and optical depth effects. In this paper, we developed a process to simultaneously optimize laser and target parameters to meet a variety of design goals. We explored two sets of design cases: a set focused on conditions relevant to the upper radiative zone of the sun (electron temperatures of 200 to 400 eVmore » and densities greater than 1/10 of solid density) and a set focused on reaching temperatures consistent with deep within the radiative zone of the sun (500 to 1000 eV) at a fixed density. We found optimized designs for iron targets and determined that the appropriate dopant, for inferring plasma conditions, depends on the goal temperature: magnesium for up to 300 eV, aluminum for 300 to 500 eV, and sulfur for 500 to 1000 eV. The optimal laser energy and buried layer thickness increase with goal temperature. The accuracy of the inferred opacity is limited to between 11% and 31%, depending on the design. Finally, overall, short pulse laser heated iron experiments reaching stellar-relevant conditions have been designed with consideration of minimizing tamper emission and optical depth effects while meeting plasma condition and x-ray emission goals.« less

MOVPE growth of (GaIn)As/Ga(AsSb)/(GaIn)As type-II heterostructures on GaAs substrate for near infrared laser applications

NASA Astrophysics Data System (ADS)

Fuchs, C.; Beyer, A.; Volz, K.; Stolz, W.

2017-04-01

The growth of high quality (GaIn)As/Ga(AsSb)/(GaIn)As "W"-quantum well heterostructures is discussed with respect to their application in 1300 nm laser devices. The structures are grown using metal organic vapor phase epitaxy and characterized using high-resolution X-ray diffraction, scanning transmission electron microscopy and photoluminescence measurements. The agreement between experimental high-resolution X-ray diffraction patterns and full dynamical simulations is verified for these structurally challenging heterostructures. Scanning transmission electron microscopy is used to demonstrate that the structure consists of well-defined quantum wells and forms the basis for future improvements of the optoelectronic quality of this materials system. By altering the group-V gas phase ratio, it is possible to cover a large spectral range between 1200 nm and 1470 nm using a growth temperature of 550 °C and a V/III ratio of 7.5. A comparison of a sample with a photoluminescence emission wavelength at 1360 nm with single quantum well material reference samples proves the type-II character of the emission. A further optimization of these structures for application in 1300 nm lasers by applying different V/III ratios yields a stable behavior of the photoluminescence intensity using a growth temperature of 550 °C.

Effect of active-region “volume” on the radiative properties of laser heterostructures with radiation output through the substrate

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nekorkin, S. M.; Zvonkov, B. N.; Baidus, N. V.

2017-01-15

The radiative properties of InGaAs/GaAs/InGaP laser structures with radiation output through the substrate depending on the number of quantum wells in the active region and laser diodes on their basis are investigated. It is established that the presence of six–eight quantum wells in the active region is optimum from the viewpoint of observable values of the threshold current and the output optical power of lasers.

Room temperature broadband terahertz gains in graphene heterostructures based on inter-layer radiative transitions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tang, Linlong; Chongqing institute of green and intelligent technology, Chinese Academy of Sciences, Chongqing, 401122; Du, Jinglei, E-mail: dujl@scu.edu.cn

We exploit inter-layer radiative transitions to provide gains to amplify terahertz waves in graphene heterostructures. This is achieved by properly doping graphene sheets and aligning their energy bands so that the processes of stimulated emissions can overwhelm absorptions. We derive an expression for the gain estimation and show the gain is insensitive to temperature variation. Moreover, the gain is broadband and can be strong enough to compensate the free carrier loss, indicating graphene based room temperature terahertz lasers are feasible.

Investigation of Photoluminescence and Photocurrent in InGaAsP/InP Strained Multiple Quantum Well Heterostructures

NASA Technical Reports Server (NTRS)

Raisky, O. Y.; Wang, W. B.; Alfano, R. R.; Reynolds, C. L., Jr.; Swaminathan, V.

1997-01-01

Multiple quantum well InGaAsP/InP p-i-n laser heterostructures with different barrier thicknesses have been investigated using photoluminescence (PL) and photocurrent (PC) measurements. The observed PL spectrum and peak positions are in good agreement with those obtained from transfer matrix calculations. Comparing the measured quantum well PC with calculated carrier escape rates, the photocurrent changes are found to be governed by the temperature dependence of the electron escape time.

Stimulated emission from HgCdTe quantum well heterostructures at wavelengths up to 19.5 μm

NASA Astrophysics Data System (ADS)

Morozov, S. V.; Rumyantsev, V. V.; Fadeev, M. A.; Zholudev, M. S.; Kudryavtsev, K. E.; Antonov, A. V.; Kadykov, A. M.; Dubinov, A. A.; Mikhailov, N. N.; Dvoretsky, S. A.; Gavrilenko, V. I.

2017-11-01

We report on stimulated emission at wavelengths up to 19.5 μm from HgTe/HgCdTe quantum well heterostructures with wide-gap HgCdTe dielectric waveguide, grown by molecular beam epitaxy on GaAs(013) substrates. The mitigation of Auger processes in structures under study is exemplified, and the promising routes towards the 20-50 μm wavelength range, where HgCdTe lasers may be competitive to the prominent emitters, are discussed.

INTERNATIONAL CONFERENCE ON SEMICONDUCTOR INJECTION LASERS SELCO-87: Behavior of gain-guided lasers generating high-power nanosecond pulses

NASA Astrophysics Data System (ADS)

Erbert, G.

1988-11-01

Computer-controlled apparatus was used in an investigation of gain-guided narrow-stripe AlGaAs double heterostructure lasers. These lasers were excited with current pulses of 10 ns duration and amplitudes up to 3 A. The watt-ampere characteristics together with near- and far-field radiation patterns were considered using an analytic model of the lasers. The results showed that the values of the gain under a stripe contact or of the absorption outside this region varied with the output power.

Comparative study of LaNiO3/LaAlO3 heterostructures grown by pulsed laser deposition and oxide molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Wrobel, F.; Mark, A. F.; Christiani, G.; Sigle, W.; Habermeier, H.-U.; van Aken, P. A.; Logvenov, G.; Keimer, B.; Benckiser, E.

2017-01-01

Variations in growth conditions associated with different deposition techniques can greatly affect the phase stability and defect structure of complex oxide heterostructures. We synthesized superlattices of the paramagnetic metal LaNiO3 and the large band gap insulator LaAlO3 by atomic layer-by-layer molecular beam epitaxy (MBE) and pulsed laser deposition (PLD) and compared their crystallinity and microstructure as revealed by high-resolution transmission electron microscopy images and resistivity. The MBE samples show a higher density of stacking faults but smoother interfaces and generally higher electrical conductivity. Our study identifies the opportunities and challenges of MBE and PLD growth and serves as a general guide for the choice of the deposition technique for perovskite oxides.

EML Array fabricated by SAG technique monolithically integrated with a buried ridge AWG multiplexer

NASA Astrophysics Data System (ADS)

Xu, Junjie; Liang, Song; Zhang, Zhike; An, Junming; Zhu, Hongliang; Wang, Wei

2017-06-01

We report the fabrication of a ten channel electroabsorption modulated DFB laser (EML) array. Different emission wavelengths of the laser array are obtained by selective area growth (SAG) technique, which is also used for the integration of electroabsorption modulators (EAM) with the lasers. An arrayed waveguide grating (AWG) combiner is integrated monolithically with the laser array by butt-joint regrowth (BJR) technique. A buried ridge waveguide structure is adopted for the AWG combiner. A self aligned fabrication procedure is adopted for the fabrication of the waveguide structure of the device to eliminate the misalignment between the laser active waveguide and the passive waveguide. A Ti thin film heater is integrated for each laser in the array. With the help of the heaters, ten laser emissions with 1.8 nm channel spacing are obtained. The integrated EAM has a larger than 11 dB static extinction ratios and larger than 8 GHz small signal modulation bandwidths. The light power collected in the output waveguide of the AWG is larger than -13 dBm for each wavelength.

Fourier transform-based scattering-rate method for self-consistent simulations of carrier transport in semiconductor heterostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Schrottke, L., E-mail: lutz@pdi-berlin.de; Lü, X.; Grahn, H. T.

We present a self-consistent model for carrier transport in periodic semiconductor heterostructures completely formulated in the Fourier domain. In addition to the Hamiltonian for the layer system, all expressions for the scattering rates, the applied electric field, and the carrier distribution are treated in reciprocal space. In particular, for slowly converging cases of the self-consistent solution of the Schrödinger and Poisson equations, numerous transformations between real and reciprocal space during the iterations can be avoided by using the presented method, which results in a significant reduction of computation time. Therefore, it is a promising tool for the simulation and efficientmore » design of complex heterostructures such as terahertz quantum-cascade lasers.« less

Phosphorus-free mode-locked semiconductor laser with emission wavelength 1550 nm

NASA Astrophysics Data System (ADS)

Kolodeznyi, E. S.; Novikov, I. I.; Babichev, A. V.; Kurochkin, A. S.; Gladyshev, A. G.; Karachinsky, L. Ya; Gadzhiev, I. M.; Buyalo, M. S.; Usikova, A. A.; Ilynskaya, N. D.; Bougrov, V. E.; Egorov, A. Yu

2017-11-01

We have fabricated passive mode-locked laser diodes based on strained InGaAlAs/InGaAs/InP heterostructures with crystal lattice mismatch parameter of +1.0 % between quantum well and barrier. The laser with temperature stabilization at 18 °C was demonstrated 10.027 GHz optical pulse repetition rate with 6 ps pulse duration time. Timing jitter of optical pulses in mode-locked regime was 0.145 ps.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Park, J.; Ahn, Y.; Tilka, J. A.

Disorder in the potential-energy landscape presents a major obstacle to the more rapid development of semiconductor quantum device technologies. We report a large-magnitude source of disorder, beyond commonly considered unintentional background doping or fixed charge in oxide layers: nanoscale strain fields induced by residual stresses in nanopatterned metal gates. Quantitative analysis of synchrotron coherent hard x-ray nanobeam diffraction patterns reveals gate-induced curvature and strains up to 0.03% in a buried Si quantum well within a Si/SiGe heterostructure. Furthermore, electrode stress presents both challenges to the design of devices and opportunities associated with the lateral manipulation of electronic energy levels.

Topographic Map of Chryse Planitia with Location of Possible Buried Basin

NASA Technical Reports Server (NTRS)

2005-01-01

This topographic map, based on data from the Mars Orbiter Laser Altimeter, shows the ground track of the 1,892nd and the 1,903rd orbits of Mars Express and the arc structures detected by that orbiter's Mars Advanced Radar for Subsurface and Ionospheric Sounding (MARSIS). The arc structures are interpreted to be part of a buried impact basin about 250 kilometers (155 miles) in diameter.

The topographic relief represented in the image is 1 kilometer (0.6 mile), from low (purple) to high (red). The projected arcs are shown in red for orbit 1892 and white for orbit 1903. There is no obvious feature in the surface topography that corresponds to the buried feature identified with MARSIS data.

NASA and the Italian Space Agency jointly funded the MARSIS instrument on the European Space Agency's Mars Express orbiter. The Mars Orbiter Laser Altimeter is an instrument on NASA's Mars Global Surveyor orbiter.

Carrier and photon dynamics in a topological insulator Bi{sub 2}Te{sub 3}/GaN type II staggered heterostructure

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chaturvedi, P.; Chouksey, S.; Banerjee, D.

2015-11-09

We have demonstrated a type-II band-aligned heterostructure between pulsed laser deposited topological insulator bismuth telluride and metal organic-chemical-vapour deposited GaN on a sapphire substrate. The heterostructure shows a large valence band-offset of 3.27 eV as determined from x-ray photoelectron spectroscopy, which is close to the bandgap of GaN (3.4 eV). Further investigation using x-ray diffraction, Raman spectroscopy, and energy-dispersive x-ray spectrum reveals the stoichiometric and material properties of bismuth telluride on GaN. Steady state photon emission from GaN is found to be modulated by the charge transfer process due to diffusion across the junction. The time constant involved with the charge transfermore » process is found to be 0.6 ns by transient absorption spectroscopy. The heterostructure can be used for designing devices with different functionalities and improving the performance of the existing devices on GaN.« less

Observation of long-lived interlayer excitons in monolayer MoSe 2–WSe 2 heterostructures

DOE PAGES

Rivera, Pasqual; Schaibley, John R.; Jones, Aaron M.; ...

2015-02-24

Van der Waals bound heterostructures constructed with two-dimensional materials, such as graphene, boron nitride and transition metal dichalcogenides, have sparked wide interest in both device physics and technologies at the two-dimensional limit. One highly coveted heterostructure is that of differing monolayer transition metal dichalcogenides with type-II band alignment, with bound electrons and holes localized in individual monolayers, that is, interlayer excitons. Here, we report the observation of interlayer excitons in monolayer MoSe 2–WSe 2 heterostructures by photoluminescence and photoluminescence excitation spectroscopy. The energy and luminescence intensity are highly tunable by an applied vertical gate voltage. Moreover, we measure an interlayermore » exciton lifetime of ~1.8 ns, an order of magnitude longer than intralayer excitons in monolayers. Ultimately, our work demonstrates optical pumping of interlayer electric polarization, which may provoke further exploration of interlayer exciton condensation, as well as new applications in two-dimensional lasers, light-emitting diodes and photovoltaic devices.« less

The AlGaAs single-mode stability

NASA Technical Reports Server (NTRS)

Botez, D.; Ladany, I.

1983-01-01

Single-mode spectral behavior with aging in constricted double heterojunction (CDH) lasers was studied. The CDH lasers demonstrated excellent reliability ( or = 1 million years extrapolated room-temperature MTTF) and single-mode operation after 10,000 hours of 70 C aging. The deleterious effects of laser-fiber coupling on the spectra of the diodes were eliminated through the use of wedge-shaped fibers. A novel high-power large optical cavity (LOC)-type laser was developed: the terraced-heterostructure (TH)-LOC laser, which provides the highest power into a single-mode (i.e., 50 mW CW) ever reported.

Lasing of multiperiod quantum-cascade lasers in the spectral range of (5.6–5.8)-μm under current pumping

DOE Office of Scientific and Technical Information (OSTI.GOV)

Egorov, A. Yu., E-mail: anton@beam.ioffe.ru; Babichev, A. V.; Karachinsky, L. Ya.

2015-11-15

The lasing of multiperiod quantum-cascade lasers in the spectral range of (5.6–5.8)-μm under current pumping are demonstrated. The quantum-cascade laser heterostructure is grown by molecular-beam epitaxy technique. Despite the relatively short laser cavity length and high level of external loss the laser shows the lasing in the temperature range of 80–220 K. The threshold current density below 4 kA/cm{sup 2} at 220 K with the characteristic temperature T{sub 0} = 123 K was demonstrated.

AlxGa1-xAs Single-Quantum-Well Surface-Emitting Lasers

NASA Technical Reports Server (NTRS)

Kim, Jae H.

1992-01-01

Surface-emitting solid-state laser contains edge-emitting Al0.08Ga0.92As single-quantum-well (SQW) active layer sandwiched between graded-index-of-refraction separate-confinement-heterostructure (GRINSCH) layers of AlxGa1-xAs, includes etched 90 degree mirrors and 45 degree facets to direct edge-emitted beam perpendicular to top surface. Laser resembles those described in "Pseudomorphic-InxGa1-xAs Surface-Emitting Lasers" (NPO-18243). Suitable for incorporation into optoelectronic integrated circuits for photonic computing; e.g., optoelectronic neural networks.

Intersubband spectroscopy of ZnO/ZnMgO quantum wells grown on m-plane ZnO substrates for quantum cascade device applications (Conference Presentation)

NASA Astrophysics Data System (ADS)

Quach, Patrick; Jollivet, Arnaud; Isac, Nathalie; Bousseksou, Adel; Ariel, Frédéric; Tchernycheva, Maria; Julien, François H.; Montes Bajo, Miguel; Tamayo-Arriola, Julen; Hierro, Adrián.; Le Biavan, Nolwenn; Hugues, Maxime; Chauveau, Jean-Michel

2017-03-01

Quantum cascade (QC) lasers opens new prospects for powerful sources operating at THz frequencies. Up to now the best THz QC lasers are based on intersubband emission in GaAs/AlGaAs quantum well (QW) heterostructures. The maximum operating temperature is 200 K, which is too low for wide-spread applications. This is due to the rather low LO-phonon energy (36 meV) of GaAs-based materials. Indeed, thermal activation allows non-radiative path through electron-phonon interaction which destroys the population inversion. Wide band gap materials such as ZnO have been predicted to provide much higher operating temperatures because of the high value of their LO-phonon energy. However, despite some observations of intersubband absorption in c-plane ZnO/ZnMgO quantum wells, little is known on the fundamental parameters such as the conduction band offset in such heterostructures. In addition the internal field inherent to c-plane grown heterostuctures is an handicap for the design of QC lasers and detectors. In this talk, we will review a systematic investigation of ZnO/ZnMgO QW heterostructures with various Mg content and QW thicknesses grown by plasma molecular beam epitaxy on low-defect m-plane ZnO substrates. We will show that most samples exhibit TM-polarized intersubband absorption at room temperature linked either to bound-to-quasi bound inter-miniband absorption or to bound-to bound intersubband absorption depending on the Mg content of the barrier material. This systematic study allows for the first time to estimate the conduction band offset of ZnO/ZnMgO heterostructures, opening prospects for the design of QC devices operating at THz frequencies. This was supported by the European Union's Horizon 2020 research and innovation programme under grant agreement #665107.

Structure and Properties of VO2 and Titanium Dioxide Based Epitaxial Heterostructures Integrated with Silicon and Sapphire Substrates

NASA Astrophysics Data System (ADS)

Bayati, Mohammad Reza

The main focus of this study was placed on structure-property correlation in TiO2 and VO2 based epitaxial heterostructures where the photochemical and electrical properties were tuned through microstructural engineering. In the framework of domain matching epitaxy, epitaxial growth of TiO2 and VO2 heterostructures on different substrates were explained. The theta-2theta and ϕ scan X-ray diffraction measurements and detailed high resolution electron microscopy studies corroborated our understanding of the epitaxial growth and the crystallographic arrangement across the interfaces. The influence of the laser and substrate variables on structural characteristics of the films was investigated using X-ray photoelectron spectroscopy, room temperature photoluminescence spectroscopy, and UV-Vis spectrophotometry. In addition, morphological studies were performed by atomic force microscopy. Photochemical properties of the heterostructures were assessed through measuring surface wettability characteristics and photocatalytic reaction rate constant of degradation of 4-chlorophenol under ultraviolet and visible irradiations. We also studied electrical properties employing 4-probe measurement technique. The effect of post treatment processes, such as vacuum annealing and laser treatment, on structure and properties was investigated as well. The role of point defects and deviation from the stoichiometry on photochemical and electrical properties was addressed. In this research, TiO2 epilayers with controlled phase structure, defect content, and crystallographic alignments were grown on sapphire and silicon substrates. Integration with silicon was achieved using cubic and tetragonal yttria-stabilized zirconia buffer layers. I was able to tune the phase structure of the TiO2 based heterostructures from pure rutile to pure anatase and establish an epitaxial relationship across the interfaces in each case. These heterostructures were used for two different purposes. First, their application in environmental remediation was taken into account. The photochemical efficiency of the samples was evaluated under ultraviolet and visible illuminations. I was able to establish a correlation between the growth conditions and the photocatalytic activity of single crystalline TiO 2 thin films. Visible-light-responsive TiO2 films were fabricated via vacuum annealing of the samples where point defects, namely oxygen vacancies and titanium interstitial, are surmised to play a critical role. An ultrafast switching was observed in wetting characteristics of the single crystalline rutile TiO2 films from a hydrophobic state to a superhydrophilic state by single pulsed excimer laser annealing. It was observed that the laser annealing almost doubles the photocatalytic efficiency of the anatase epitaxial thin films. I was able to measure the photochemical properties of the rutile and the anatase TiO2 heterostructures in a controlled way due to the single crystalline nature of the films. Second, the rutile TiO2 epilayers with different out-of-plane orientations were deposited and used as a platform for VO2 based epitaxial heterostructures with the aim of manipulating of microstructure and electrical properties of the VO 2 films. Vanadium dioxide (VO2) is an interesting material due to the abrupt change in electrical resistivity and infrared transmittance at about 68 °C. The transition temperature can be tuned through microstructural engineering. It was the idea behind using rutile TiO2 with different crystallographic orientations as a template to tune the semiconductor to metal transition characteristics of the VO2 top layer. I successfully grew VO2(001), VO2(100), and VO2(2¯01) epitaxial thin films on TiO2(100)/c-sapphire, TiO2(101)/r-sapphire, and TiO2(001)/ m-sapphire platforms, respectively. It was observed that tetragonal phase of VO2 was stabilized at lower temperatures leading to a significant decrease in the semiconductor to metal transition temperature. In other words, we were able to tune the transition temperature of the VO 2 epitaxial heterostructures. This achievement introduces the VO 2 based single crystalline heterostructures as a promising candidate for a wide range of applications where different transition temperatures are required. The epitaxial relationships were established and atomic arrangement across the interfaces was studied in detail.

Increasing the critical thickness of InGaAs quantum wells using strain-relief technologies

NASA Astrophysics Data System (ADS)

Jones, Andrew Marquis

The advantages of optical communication through silica fiber have made long-distance electrical communication through copper wire obsolete. The two windows of operation for long-haul optical communication are centered around the wavelengths of 1.3 mum and 1.55 mum, which have minimal amounts of signal attenuation and dispersion. Benefits of optical communications within these windows include low system costs, high bandwidth, and high system reliability which have encouraged the development of emitters and receivers at these relatively long wavelengths. Long-wavelength semiconductor lasers are typically fabricated on InP substrates, but their performance suffers greatly with increases in operating temperature. Laser diodes on GaAs substrates are not as sensitive to operating temperature due to quantum-well active regions with relative deep potential barriers, but critical thickness limits the wavelength ceiling to 1.1 mum. Strain-relief technologies are currently being investigated to enable long-wavelength lasers with deeper potential wells leading to a corresponding increase in characteristic temperatures. Having a larger lattice constant than GaAs enables ternary InGaAs substrates to increase the 1.1-mum wavelength ceiling. Extending this ceiling to one of the optical communication windows could enable high-characteristic-temperature, long-wavelength lasers. Broad-area and buried-heterostructure lasers have demonstrated the potential of ternary substrates to increase characteristic temperatures and emission wavelengths. Wavelengths as long as 1.15 mum and characteristic temperatures as high as 145 K have been achieved. Reduced-area metalorganic chemical vapor deposition involves the deposition of strained materials on isolated islands. Due to the discontinuous nature of reduced-area epitaxy, strained materials are allowed to expand near the mesa edges, decreasing the overall strain in the structure. Laser diodes using this technology have been successfully fabricated, and evidence for partial relief of strain energy has been obtained. Compliant membranes enable strain relief by depositing on an ultra-thin semiconductor base. Unlike growth on typical thick substrates, expansion of the compliant membrane during strained-layer regrowth allows the membrane to accommodate most of the strain energy. Ternary InGaAs compliant films supported above a GaAs substrate with single AlGaAs pedestals have been utilized to fabricate long-wavelength (1.35 mum) InGaAs quantum wells on a GaAs substrate.

Electrical transport measurements of thin film samples under high hydrostatic pressure

NASA Astrophysics Data System (ADS)

Zabaleta, J.; Parks, S. C.; Baum, B.; Teker, A.; Syassen, K.; Mannhart, J.

2017-03-01

We present a method to perform electrical measurements of epitaxial films and heterostructures a few nanometers thick under high hydrostatic pressures in a diamond anvil cell (DAC). Hydrostatic pressure offers the possibility to tune the rich landscape of properties shown by epitaxial heterostructures, systems in which the combination of different materials, performed with atomic precision, can give rise to properties not present in their individual constituents. Measuring electrical conductivity under hydrostatic pressure in these systems requires a robust method that can address all the challenges: the preparation of the sample with side length and thickness that fits in the DAC setup, a contacting method compatible with liquid media, a gasket insulation that resists high forces, as well as an accurate procedure to place the sample in the pressure chamber. We prove the robustness of the method described by measuring the resistance of a two dimensional electron system buried at the interface between two insulating oxides under hydrostatic conditions up to ˜5 GPa. The setup remains intact until ˜10 GPa, where large pressure gradients affect the two dimensional conductivity.

Electrical transport measurements of thin film samples under high hydrostatic pressure.

PubMed

Zabaleta, J; Parks, S C; Baum, B; Teker, A; Syassen, K; Mannhart, J

2017-03-01

We present a method to perform electrical measurements of epitaxial films and heterostructures a few nanometers thick under high hydrostatic pressures in a diamond anvil cell (DAC). Hydrostatic pressure offers the possibility to tune the rich landscape of properties shown by epitaxial heterostructures, systems in which the combination of different materials, performed with atomic precision, can give rise to properties not present in their individual constituents. Measuring electrical conductivity under hydrostatic pressure in these systems requires a robust method that can address all the challenges: the preparation of the sample with side length and thickness that fits in the DAC setup, a contacting method compatible with liquid media, a gasket insulation that resists high forces, as well as an accurate procedure to place the sample in the pressure chamber. We prove the robustness of the method described by measuring the resistance of a two dimensional electron system buried at the interface between two insulating oxides under hydrostatic conditions up to ∼5 GPa. The setup remains intact until ∼10 GPa, where large pressure gradients affect the two dimensional conductivity.

Diffusion-controlled growth of molecular heterostructures: fabrication of two-, one-, and zero-dimensional C(60) nanostructures on pentacene substrates.

PubMed

Breuer, Tobias; Witte, Gregor

2013-10-09

A variety of low dimensional C60 structures has been grown on supporting pentacene multilayers. By choice of substrate temperature during growth the effective diffusion length of evaporated fullerenes and their nucleation at terraces or step edges can be precisely controlled. AFM and SEM measurements show that this enables the fabrication of either 2D adlayers or solely 1D chains decorating substrate steps, while at elevated growth temperature continuous wetting of step edges is prohibited and instead the formation of separated C60 clusters pinned at the pentacene step edges occurs. Remarkably, all structures remain thermally stable at room temperature once they are formed. In addition the various fullerene structures have been overgrown by an additional pentacene capping layer. Utilizing the different probe depth of XRD and NEXAFS, we found that no contiguous pentacene film is formed on the 2D C60 structure, whereas an encapsulation of the 1D and 0D structures with uniformly upright oriented pentacene is achieved, hence allowing the fabrication of low dimensional buried organic heterostructures.

A 980 nm pseudomorphic single quantum well laser for pumping erbium-doped optical fiber amplifiers

NASA Technical Reports Server (NTRS)

Larsson, A.; Forouhar, S.; Cody, J.; Lang, R. J.; Andrekson, P. A.

1990-01-01

The authors have fabricated ridge waveguide pseudomorphic InGaAs/GaAs/AlGaAs GRIN-SCH SQW (graded-index separate-confinement-heterostructure single-quantum-well) lasers, emitting at 980 nm, with a maximum output power of 240 mW from one facet and a 22 percent coupling efficiency into a 1.55-micron single-mode optical fiber. These lasers satisfy the requirements on efficient and compact pump sources for Er3+-doped fiber amplifiers.

Distributed feedback InGaN/GaN laser diodes

NASA Astrophysics Data System (ADS)

Slight, Thomas J.; Watson, Scott; Yadav, Amit; Grzanka, Szymon; Stanczyk, Szymon; Docherty, Kevin E.; Rafailov, Edik; Perlin, Piotr; Najda, Steve; Leszczyński, Mike; Kelly, Anthony E.

2018-02-01

We have realised InGaN/GaN distributed feedback laser diodes emitting at a single wavelength in the 42X nm wavelength range. Laser diodes based on Gallium Nitride (GaN) are useful devices in a wide range of applications including atomic spectroscopy, data storage and optical communications. To fully exploit some of these application areas there is a need for a GaN laser diode with high spectral purity, e.g. in atomic clocks, where a narrow line width blue laser source can be used to target the atomic cooling transition. Previously, GaN DFB lasers have been realised using buried or surface gratings. Buried gratings require complex overgrowth steps which can introduce epi-defects. Surface gratings designs, can compromise the quality of the p-type contact due to dry etch damage and are prone to increased optical losses in the grating regions. In our approach the grating is etched into the sidewall of the ridge. Advantages include a simpler fabrication route and design freedom over the grating coupling strength.Our intended application for these devices is cooling of the Sr+ ion and for this objective the laser characteristics of SMSR, linewidth, and power are critical. We investigate how these characteristics are affected by adjusting laser design parameters such as grating coupling coefficient and cavity length.

Electroluminescence of ZnO-based semiconductor heterostructures

NASA Astrophysics Data System (ADS)

Novodvorskii, O. A.; Lotin, A. A.; Panchenko, Vladislav Ya; Parshina, L. S.; Khaidukov, E. V.; Zuev, D. A.; Khramova, O. D.

2011-01-01

Using pulsed laser deposition, we have grown n-ZnO/p-GaN, n-ZnO/i-ZnO/p-GaN and n-ZnO/n-Mg0.2Zn0.8O/i-Cd0.2Zn0.8O/p-GaN light-emitting diode (LED) heterostructures with peak emission wavelengths of 495, 382 and 465 nm and threshold current densities (used in electroluminescence measurements) of 1.35, 2, and 0.48 A cm-2, respectively. Because of the spatial carrier confinement, the n-ZnO/n-Mg0.2Zn0.8O/i-Cd0.2Zn0.8O/p-GaN double heterostructure LED offers a higher electroluminescence intensity and lower electroluminescence threshold in comparison with the n-ZnO/p-GaN and n-ZnO/i-ZnO/p-GaN LEDs.

Dual optical marker Raman characterization of strained GaN-channels on AlN using AlN/GaN/AlN quantum wells and {sup 15}N isotopes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Qi, Meng; Li, Guowang; Protasenko, Vladimir

2015-01-26

This work shows that the combination of ultrathin highly strained GaN quantum wells embedded in an AlN matrix, with controlled isotopic concentrations of Nitrogen enables a dual marker method for Raman spectroscopy. By combining these techniques, we demonstrate the effectiveness in studying strain in the vertical direction. This technique will enable the precise probing of properties of buried active layers in heterostructures, and can be extended in the future to vertical devices such as those used for optical emitters and for power electronics.

Electrode-stress-induced nanoscale disorder in Si quantum electronic devices

DOE PAGES

Park, J.; Ahn, Y.; Tilka, J. A.; ...

2016-06-20

Disorder in the potential-energy landscape presents a major obstacle to the more rapid development of semiconductor quantum device technologies. We report a large-magnitude source of disorder, beyond commonly considered unintentional background doping or fixed charge in oxide layers: nanoscale strain fields induced by residual stresses in nanopatterned metal gates. Quantitative analysis of synchrotron coherent hard x-ray nanobeam diffraction patterns reveals gate-induced curvature and strains up to 0.03% in a buried Si quantum well within a Si/SiGe heterostructure. Furthermore, electrode stress presents both challenges to the design of devices and opportunities associated with the lateral manipulation of electronic energy levels.

A Very Large Population of Likely Buried Impact Basins in the Northern Lowlands of Mars Revealed by MOLA Data

NASA Technical Reports Server (NTRS)

Frey, H. V.; Shockey, K. M.; Frey, E. L.; Roark, J. H.; Sakimoto, S. E. H.

2001-01-01

High resolution Mars Orbiter Laser Altimeter (MOLA) data have revealed a large number of subdued quasi-circular depressions (QCDs) >50 km diameter in the northern lowlands of Mars which are generally not visible in Viking imagery and which may be buried ancient impact basins. Additional information is contained in the original extended abstract.

INTERNATIONAL CONFERENCE ON SEMICONDUCTOR INJECTION LASERS SELCO-87: Thermally induced stresses in stripe GaAs/GaAlAs laser diodes

NASA Astrophysics Data System (ADS)

Rimpler, R.; Both, W.

1988-11-01

Heating of the active region of stripe GaAlAs/GaAs double-heterostructure laser diodes by an injection current has a strong influence on the stresses in this region. An increase in the temperature of the region by 10 K can alter a shear stress by 5-10 MPa. In the case of lasers with a large thermal resistance the strong heating of the active region can induce mechanical stresses exceeding technological stresses (10 MPa) or even critical shear stresses for dislocation motion (20 MPa).

Spin-orbit torque induced switching in a magnetic insulator thin film with perpendicular magnetic anisotropy

NASA Astrophysics Data System (ADS)

Li, J. X.; Yu, G. Q.; Tang, C.; Wang, K. L.; Shi, J.

Spin-orbit torque (SOT) has been demonstrated to be efficient to manipulate the magnetization in heavy-metal/ferromagnetic metal (HM/FMM) heterostructures. In HM/magnetic insulator (MI) heterostructures, charge currents do not flow in MI, but pure spin currents generated by the spin Hall effect in HM can enter the MI layer to cause magnetization dynamics. Here we report SOT-induced magnetization switching in Tm3Fe5O12/Pt heterostructures, where Tm3Fe5O12 (TmIG) is a MI grown by pulsed laser deposition with perpendicular magnetic anisotropy. The anomalous Hall signal in Pt is used as a probe to detect the magnetization switching. Effective magnetic fields due to the damping-like and field-like torques are extracted using a harmonic Hall detection method. The experiments are carried out in heterostructures with different TmIG film thicknesses. Both the switching and harmonic measurements indicate a more efficient SOT generation in HM/MI than in HM/FMM heterostructures. Our comprehensive experimental study and detailed analysis will be presented. This work was supported as part of the SHINES, an Energy Frontier Research Center funded by the US Department of Energy, Office of Science, Basic Energy Sciences under Award No. SC0012670.

IZO deposited by PLD on flexible substrate for organic heterostructures

NASA Astrophysics Data System (ADS)

Socol, M.; Preda, N.; Stanculescu, A.; Breazu, C.; Florica, C.; Rasoga, O.; Stanculescu, F.; Socol, G.

2017-05-01

In:ZnO (IZO) thin films were deposited on flexible plastic substrates by pulsed laser deposition (PLD) method. The obtained layers present adequate optical and electrical properties competitive with those based on indium tin oxide (ITO). The figure of merit (9 × 10-3 Ω-1) calculated for IZO layers demonstrates that high quality coatings can be prepared by this deposition technique. A thermal annealing (150 °C for 1 h) or an oxygen plasma etching (6 mbar for 10 min.) were applied to the IZO layers to evaluate the influence of these treatments on the properties of the transparent coatings. Using vacuum evaporation, organic heterostructures based on cooper phthalocyanine (CuPc) and 3,4,9,10-perylenetetracarboxylic dianhydride (PTCDA) were deposited on the untreated and treated IZO layers. The optical and electrical properties of the heterostructures were investigated by UV-Vis, FTIR and current-voltage ( I- V) measurements. For the heterostructure fabricated on IZO treated in oxygen plasma, an improvement in the current value with at least one order of magnitude was evidenced in the I- V characteristics recorded in dark conditions. Also, an increase in the current value for the heterostructure deposited on untreated IZO layer can be achieved by adding an organic layer such as tris-8-hydroxyquinoline aluminium (Alq3).

The Nanoelectric Modeling Tool (NEMO) and Its Expansion to High Performance Parallel Computing

NASA Technical Reports Server (NTRS)

Klimeck, G.; Bowen, C.; Boykin, T.; Oyafuso, F.; Salazar-Lazaro, C.; Stoica, A.; Cwik, T.

1998-01-01

Material variations on an atomic scale enable the quantum mechanical functionality of devices such as resonant tunneling diodes (RTDs), quantum well infrared photodetectors (QWIPs), quantum well lasers, and heterostructure field effect transistors (HFETs).

Fatigue and retention in ferroelectric Y-Ba-Cu-O/Pb-Zr-Ti-O/Y-Ba-Cu-O heterostructures

NASA Astrophysics Data System (ADS)

Ramesh, R.; Chan, W. K.; Wilkens, B.; Gilchrist, H.; Sands, T.; Tarascon, J. M.; Keramidas, V. G.; Fork, D. K.; Lee, J.; Safari, A.

1992-09-01

Fatigue and retention characteristics of ferroelectric lead zirconate titanate thin films grown with Y-Ba-Cu-O(YBCO) thin-film top and bottom electrodes are found to be far superior to those obtained with conventional Pt top electrodes. The heterostructures reported here have been grown in situ by pulsed laser deposition on yttria-stabilized ZrO2 buffer [100] Si and on [001] LaAlO3. Both the a- and c-axis orientations of the YBCO lattice have been used as electrodes. They were prepared using suitable changes in growth conditions.

Continuous wave channel waveguide lasers in Nd:LuVO4 fabricated by direct femtosecond laser writing.

PubMed

Ren, Yingying; Dong, Ningning; Macdonald, John; Chen, Feng; Zhang, Huaijin; Kar, Ajoy K

2012-01-30

Buried channel waveguides in Nd:LuVO<4 were fabricated by femtosecond laser writing with the double-line technique. The photoluminescence properties of the bulk materials were found to be well preserved within the waveguide core region. Continuous-wave laser oscillation at 1066.4 nm was observed from the waveguide under ~809 nm optical excitation, with the absorbed pump power at threshold and laser slope efficiency of 98 mW and 14%, respectively.

Using terrestrial laser scanning for differential measurement of interannual rock glacier movement in the Argentine Dry Andes

NASA Astrophysics Data System (ADS)

Kane, Renato R.

Argentina has recently implemented laws to protect glaciers and buried ice in the Andes to improve the sustainability of scarce, long-term water resources. Therefore, all glaciers and buried ice terrains must be located and avoided in any commercial alterations of the landscape. Buried ice in this remote and often dangerous terrain typically is located via the use of remote-sensing techniques. This thesis applies one such technique, Light Detection and Ranging (LiDAR) in the form of Terrestrial Laser Scanning (TLS), to detect rock glacier movement that is indicative of flowing, buried ice not visible in near surface excavations. TLS surveys were completed at two locales, Los Azules and El Altar, in both AD 2013 and AD 2014 on landscapes where buried ice is suspected to have produced the current surface forms. Multiple TLS scans were co-registered with the use of benchmarks, both between scans and between years, which introduced quantifiable positional errors. Digital Elevation Models (DEMs) were derived from the point cloud data by standardizing the spacing of the points in the horizontal direction, creating 0.1 m by 0.1 m cells with elevation as the cell value. The DEMs for each year were subtracted from each other to yield a change in elevation. The surface roughness of the rock glaciers (vertical variability within each cell) was empirically determined and evaluated as a threshold for results. Both sites showed sub-decimeter interannual movements, and the direction of their movement is typical of forms with buried ice. The results of the study were validated using independent GPS data showing annual movement rates. Despite the downslope movement of these rock glaciers, the volume of ice contained within them remains unclear, and further study is required to assess the volume of water contained.

In-Situ Analysis System for Correlated Electron Heterostructures

DTIC Science & Technology

2014-11-20

semiconductor materials and elemental metals. Specifically, films must be pristine and ideally remain intact during analytical procedure [1]. In addition...involves a rather complex engineering design described below. A laser heater ! (a) ! (b) ! 1 Figure 1. (a) An empty Neocera’s sample holder rack...the center of the analytical chamber. (fiber-coupled, high-power 808 nm diode laser JOLD -100-CPXF-2P, Jenoptik), is free of such limitations because

Above room temperature operation of InGaAs/AlGaAs/GaAs quantum cascade lasers

NASA Astrophysics Data System (ADS)

Pierścińska, D.; Gutowski, P.; Hałdaś, G.; Kolek, A.; Sankowska, I.; Grzonka, J.; Mizera, J.; Pierściński, K.; Bugajski, M.

2018-03-01

In this work we report on the performance of mid-infrared quantum cascade lasers (QCLs) based on strained InGaAs/AlGaAs grown by molecular beam epitaxy on GaAs substrate. Structures were grown with indium content from 1% to 6% in GaAs quantum wells (QW) and 45% of Al in AlGaAs barrier layers. The design results in strained heterostructure, however, no strain relaxation was observed as documented by x-ray diffraction measurements up to ∼3% of In content in QWs. The investigation of heterostructures and devices was performed, including structural measurements and electrooptical characterization of devices. Devices fabricated from epi wafers with 2.64% of In exhibited performance largely improved over GaAs/AlGaAs QCLs. Roughly two times reduction of the threshold current density was observed at lasing wavelength ∼9.45 μm. The lasers operated in pulsed mode up to T = 50 °C with characteristic temperature T 0 = 115 K. The decrease of the threshold current density has been mainly attributed to the reduction of interface roughness scattering and the increase of activation energy for the escape of carriers from the upper laser level to the 3D continuum. Further increase of In content in QWs resulted in the deterioration of device parameters.

Rectifying magnetic tunnel diode like behavior in Co2MnSi/ZnO/p-Si heterostructure

NASA Astrophysics Data System (ADS)

Maji, Nilay; Nath, T. K.

2018-04-01

The rectifying magnetic tunnel diode like behavior has been observed in Co2MnSi/ZnO/p-Si heterostructure. At first an ultra thin layer of ZnO has been deposited on p-Si (100) substrate with the help of pulsed laser deposition (PLD). After that a highly spin-polarized Heusler alloy Co2MnSi (CMS) film (250 nm) has been grown on ZnO/p-Si using electron beam physical vapor deposition technique. The phase purity of the sample has been confirmed through high resolution X-Ray diffraction technique. The electrical transport properties have been investigated at various isothermal conditions in the temperature range of 77-300 K. The current-voltage characteristics exhibit an excellent rectifying tunnel diode like behavior throughout the temperature regime. The current (I) across the junction has been found to decrease with the application of an external magnetic field parallel to the plane of the CMS film clearly indicating positive junction magnetoresistance (JMR) of the heterostructure. The magnetic field dependent JMR behavior of our heterostructure has been investigated in the same temperature range. Our heterostructure clearly demonstrates a giant positive JMR at 78 K (˜264%) and it starts decreasing with increasing temperature. If we compare our results with earlier reported results on other heterostructures, it can be seen that the JMR value for our heterojunction saturates at a much lower external magnetic field, thus creating it a better alternative for spin tunnel diodes in upcoming spintronics device applications.

Development of a Buried Layer Platform at the OMEGA laser to Study Coronal (nonLTE) Plasmas

NASA Astrophysics Data System (ADS)

Schneider, M. B.; Marley, E. V.; Brown, G. V.; Heeter, R. F.; Barrios, M. A.; Foord, M. E.; Gray, W. J.; Jarrott, L. C.; Liedahl, D. A.; Mauche, C. W.; Widmann, K.

2016-10-01

A buried layer platform is being developed at the OMEGA laser to study the radiative properties of coronal (non-LTE) plasmas (ne few 1021 /cm3 , Te 1 - 2 keV) of mid to high Z materials. In the current study, the target was a 200 μm square with equal atomic mixes of gold/iron/vanadium in the center of a 600 μm diameter, 10 μm thick beryllium tamper. The thickness of the buried layer was either 1200 A or 1800 A. Lasers heat the target from both sides for up to 4 ns. The size of the microdot vs time was measured with x-ray imaging (face-on) and x- ray spectroscopy (side-on). The radiant x-ray power was measured with a low-resolution absolutely calibrated x-ray spectrometer (DANTE). The temperature was measured from the Fe and V helium-beta complexes. The use of these measurements to deduce emissivity of the target in the 2-3 keV x-ray range and improvements for future experiments are discussed. This work was performed under the auspices of the U.S. Department of Energy by LLNS, LLC, under Contract No. DE-AC52-07NA27344.

Computational nanoelectronics towards: design, analysis, synthesis, and fundamental limits

NASA Technical Reports Server (NTRS)

Klimeck, G.

2003-01-01

This seminar will review the development of a comprehensive nanoelectronic modeling tool (NEMO 1-D and NEMO 3-D) and its application to high-speed electronics (resonant tunneling diodes) and IR detectors and lasers (quantum dots and 1-D heterostructures).

Transition-metal dichalcogenides heterostructure saturable absorbers for ultrafast photonics.

PubMed

Chen, Hao; Yin, Jinde; Yang, Jingwei; Zhang, Xuejun; Liu, Mengli; Jiang, Zike; Wang, Jinzhang; Sun, Zhipei; Guo, Tuan; Liu, Wenjun; Yan, Peiguang

2017-11-01

In this Letter, high-quality WS 2 film and MoS 2 film were vertically stacked on the tip of a single-mode fiber in turns to form heterostructure (WS 2 -MoS 2 -WS 2 )-based saturable absorbers with all-fiber integrated features. Their nonlinear saturable absorption properties were remarkable, such as a large modulation depth (∼16.99%) and a small saturable intensity (6.23  MW·cm -2 ). Stable pulses at 1.55 μm with duration as short as 296 fs and average power as high as 25 mW were obtained in an erbium-doped fiber laser system. The results demonstrate that the proposed heterostructures own remarkable nonlinear optical properties and offer a platform for adjusting nonlinear optical properties by stacking different transition-metal dichalcogenides or modifying the thickness of each layer, paving the way for engineering functional ultrafast photonics devices with desirable properties.

Impulse voltage control of continuously tunable bipolar resistive switching in Pt/Bi0.9Eu0.1FeO3/Nb-doped SrTiO3 heterostructures

NASA Astrophysics Data System (ADS)

Wei, Maocai; Liu, Meifeng; Wang, Xiuzhang; Li, Meiya; Zhu, Yongdan; Zhao, Meng; Zhang, Feng; Xie, Shuai; Hu, Zhongqiang; Liu, Jun-Ming

2017-03-01

Epitaxial Bi0.9Eu0.1FeO3 (BEFO) thin films are deposited on Nb-doped SrTiO3 (NSTO) substrates by pulsed laser deposition to fabricate the Pt/BEFO/NSTO (001) heterostructures. These heterostructures possess bipolar resistive switching, where the resistances versus writing voltage exhibits a distinct hysteresis loop and a memristive behavior with good retention and anti-fatigue characteristics. The local resistive switching is confirmed by the conductive atomic force microscopy (C-AFM), suggesting the possibility to scale down the memory cell size. The observed memristive behavior could be attributed to the ferroelectric polarization effect, which modulates the height of potential barrier and width of depletion region at the BEFO/NSTO interface. The continuously tunable resistive switching behavior could be useful to achieve non-volatile, high-density, multilevel random access memory with low energy consumption.

Epitaxial cuprate superconductor/ferroelectric heterostructures.

PubMed

Ramesh, R; Inam, A; Chan, W K; Wilkens, B; Myers, K; Remschnig, K; Hart, D L; Tarascon, J M

1991-05-17

Thin-film heterostructures of Bi(4)Ti(3)O(12)Bi(2)Sr(2)CuO(6+x), have been grown on single crystals of SrTiO(3), LaAlO(3), and MgAl(2)O(4) by pulsed laser deposition. X-ray diffraction studies show the presence of c-axis orientation only; Rutherford backscattering experiments show the composition to be close to the nominal stoichiometry. The films are ferroelectric and exhibit a symmetric hysteresis loop. The remanent polarization was 1.0 microcoulomb per square centimeter, and the coercive field was 2.0 x 10(5) volts per centimeter. Similar results were obtained with YBa(2)Cu(3)O(7-x) and Bi(2)Sr(2)CaCu(2)O(8+x), and single-crystal Bi(2)Sr(2)CuO(6+x)as the bottom electrodes. These films look promising for use as novel, lattice-matched, epitaxial ferroelectric film/electrode heterostructures in nonvolatile memory applications.

Multicolor photonic crystal laser array

DOEpatents

Wright, Jeremy B; Brener, Igal; Subramania, Ganapathi S; Wang, George T; Li, Qiming

2015-04-28

A multicolor photonic crystal laser array comprises pixels of monolithically grown gain sections each with a different emission center wavelength. As an example, two-dimensional surface-emitting photonic crystal lasers comprising broad gain-bandwidth III-nitride multiple quantum well axial heterostructures were fabricated using a novel top-down nanowire fabrication method. Single-mode lasing was obtained in the blue-violet spectral region with 60 nm of tuning (or 16% of the nominal center wavelength) that was determined purely by the photonic crystal geometry. This approach can be extended to cover the entire visible spectrum.

INTERNATIONAL CONFERENCE ON SEMICONDUCTOR INJECTION LASERS SELCO-87: Multilayer CrPtCr/NiAu ohmic contacts with p-type GaAs in heterojunction laser structures

NASA Astrophysics Data System (ADS)

Wójcik, I.; Stareev, G.; Barcz, A.; Domański, M.

1988-11-01

Multilayer CrPtCr/NiAu metallization was deposited by sputtering in a magnetron on the p-type side of GaAs in a pulsed laser heterostructure. Heat treatment at 490 °C for 3 min produced a reliable ohmic contact with a specific resistance of 10- 6-10- 5 Ω · cm2, depending on the substrate doping. Secondary-ion mass spectroscopy and Rutherford backscattering methods were used to study the mechanism of formation of a contact.

Novel Design of Type I High Power Mid-IR Diode Lasers for Spectral Region 3 - 4.2 Microns

DTIC Science & Technology

2014-09-25

multifold improvement of the device characteristics. Cascade pumping was achieved utilizing efficient interband tunneling through "leaky" window in band...Initially cascade pumping scheme was applied to laser heterostructures utilizing gain sections based on either intersubband [1] or type-II interband ...active regions, metamorphic virtual substrate and cascade pumping scheme. Cascade pumping of type-I quantum well gain section opened the whole new

Engineered Heterostructures of 6.1 A III-V Semiconductors for Advanced Electronic and Optoelectronic Applications

DTIC Science & Technology

1999-01-01

sensitive infrared detectors and mid- infrared semiconductor lasers. In this paper, we describe the ongoing work at the Naval Research Laboratory to develop...enormous flexibility in designing novel electronic and optical devices. Specifically, long-wave infrared (IR) detectors ,1 mid-wave IR lasers,2 high...frequency field effect transistors3 (FETs) and resonant interband tunneling diodes4 (RITDs) have been demonstrated. However, many of these applications

Direct femtosecond laser writing of buried infrared waveguides in chalcogenide glasses

NASA Astrophysics Data System (ADS)

Le Coq, D.; Bychkov, E.; Masselin, P.

2016-02-01

Direct laser writing technique is now widely used in particular in glass, to produce both passive and active photonic devices. This technique offers a real scientific opportunity to generate three-dimensional optical components and since chalcogenide glasses possess transparency properties from the visible up to mid-infrared range, they are of great interest. Moreover, they also have high optical non-linearity and high photo-sensitivity that make easy the inscription of refractive index modification. The understanding of the fundamental and physical processes induced by the laser pulses is the key to well-control the laser writing and consequently to realize integrated photonic devices. In this paper, we will focus on two different ways allowing infrared buried waveguide to be obtained. The first part will be devoted to a very original writing process based on a helical translation of the sample through the laser beam. In the second part, we will report on another original method based on both a filamentation phenomenon and a point by point technique. Finally, we will demonstrate that these two writing techniques are suitable for the design of single mode waveguide for wavelength ranging from the visible up to the infrared but also to fabricate optical components.

Selective tuning of high-Q silicon photonic crystal nanocavities via laser-assisted local oxidation.

PubMed

Chen, Charlton J; Zheng, Jiangjun; Gu, Tingyi; McMillan, James F; Yu, Mingbin; Lo, Guo-Qiang; Kwong, Dim-Lee; Wong, Chee Wei

2011-06-20

We examine the cavity resonance tuning of high-Q silicon photonic crystal heterostructures by localized laser-assisted thermal oxidation using a 532 nm continuous wave laser focused to a 2.5 μm radius spot-size. The total shift is consistent with the parabolic rate law. A tuning range of up to 8.7 nm is achieved with ∼ 30 mW laser powers. Over this tuning range, the cavity Qs decreases from 3.2×10(5) to 1.2×10(5). Numerical simulations model the temperature distributions in the silicon photonic crystal membrane and the cavity resonance shift from oxidation.

Whole-field digital vibrometer system for buried landmine detection

NASA Astrophysics Data System (ADS)

Lal, Amit; Hess, Cecil; Scott, Eddie; Dang, Michael; Nichols, Robert

2005-06-01

Previous results have shown the potential of acoustic-to-seismic coupling with Laser Doppler Vibrometry for the detection of buried landmines. An important objective of the present technology is to improve the spatial resolution and the speed of the measurement. In this paper, MetroLaser reports on a whole-field digital vibrometer (WDV) that measures an entire one meter area with sub-centimeter spatial resolution in just a few seconds. The WDV is based on a dual-pulsed laser such that each pulse illuminates a one meter area on the ground, and the temporal separation between the two laser pulses can be adjusted to match the ground excitation frequency. By sweeping this excitation frequency, a displacement map of the ground at each frequency can be quickly generated. In addition, an innovative speckle repositioning strategy allows for movement of the measurement platform at reasonable speeds while still obtaining measurements with interferometric precision. This paper describes the WDV instrument and presents preliminary experimental results obtained with this system. This research is being supported by the U.S. Army RDECOM CERDEC NVESD under Contract W909MY04-C-0004.

Scanning gate microscopy of quantum rings: effects of an external magnetic field and of charged defects.

PubMed

Pala, M G; Baltazar, S; Martins, F; Hackens, B; Sellier, H; Ouisse, T; Bayot, V; Huant, S

2009-07-01

We study scanning gate microscopy (SGM) in open quantum rings obtained from buried semiconductor InGaAs/InAlAs heterostructures. By performing a theoretical analysis based on the Keldysh-Green function approach we interpret the radial fringes observed in experiments as the effect of randomly distributed charged defects. We associate SGM conductance images with the local density of states (LDOS) of the system. We show that such an association cannot be made with the current density distribution. By varying an external magnetic field we are able to reproduce recursive quasi-classical orbits in LDOS and conductance images, which bear the same periodicity as the Aharonov-Bohm effect.

Transverse writing of three-dimensional tubular optical waveguides in glass with a slit-shaped femtosecond laser beam

PubMed Central

Liao, Yang; Qi, Jia; Wang, Peng; Chu, Wei; Wang, Zhaohui; Qiao, Lingling; Cheng, Ya

2016-01-01

We report on fabrication of tubular optical waveguides buried in ZBLAN glass based on transverse femtosecond laser direct writing. Irradiation in ZBLAN with focused femtosecond laser pulses leads to decrease of refractive index in the modified region. Tubular optical waveguides of variable mode areas are fabricated by forming the four sides of the cladding with slit-shaped femtosecond laser pulses, ensuring single mode waveguiding with a mode field dimension as small as ~4 μm. PMID:27346285

Compositional dependence of the band gap in Ga(NAsP) quantum well heterostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jandieri, K., E-mail: kakhaber.jandieri@physik.uni-marburg.de; Ludewig, P.; Wegele, T.

We present experimental and theoretical studies of the composition dependence of the direct band gap energy in Ga(NAsP)/GaP quantum well heterostructures grown on either (001) GaP- or Si-substrates. The theoretical description takes into account the band anti-crossing model for the conduction band as well as the modification of the valence subband structure due to the strain resulting from the pseudomorphic epitaxial growth on the respective substrate. The composition dependence of the direct band gap of Ga(NAsP) is obtained for a wide range of nitrogen and phosphorus contents relevant for laser applications on Si-substrate.

INTERNATIONAL CONFERENCE ON SEMICONDUCTOR INJECTION LASERS SELCO-87: Low-threshold ridge-waveguide 1.3-μm laser

NASA Astrophysics Data System (ADS)

Kortàn, J.; Nohavica, D.; Sarma, J.

1988-11-01

A description is given of the fabrication and of the main properties of 1.3-μm GaInAsP lasers with a ridge (rib) waveguide structure used for lateral confinement of transverse modes and of the current. Such lasers were made by the method of ion-beam etching and self-alignment photolithography. Narrow ridges (3-5 μm) formed in this way carried Ti-Au Schottky contacts. These lasers were simple to fabricate and their threshold currents were comparable with those in much more complex lasers with buried waveguide structures.

Electric field-induced resistive switching, magnetism, and photoresponse modulation in a Pt/Co0.03Zn0.97O/Nb:SrTiO3 multi-function heterostructure

NASA Astrophysics Data System (ADS)

Luo, Zhipeng; Pei, Ling; Li, Meiya; Zhu, Yongdan; Xie, Shuai; Cheng, Xiangyang; Liu, Jiaxian; Ding, Huaqi; Xiong, Rui

2018-04-01

A Co0.03Zn0.97O (CZO) thin film was epitaxially grown on a Nb doped (001) SrTiO3 (NSTO) single-crystal substrate by pulsed laser deposition to form a Pt/CZO/NSTO heterostructure. This device exhibits stable bipolar resistive switching, well retention and endurance, multilevel memories, and a resistance ratio of high resistance state (HRS)/low resistance state (LRS) up to 7 × 105. Under the illumination of a 405 nm laser, the HRS of the device showed distinct photoelectricity with an open-circuit voltage of 0.5 V. A stronger ferromagnetism was observed at the HRS than at the LRS. The above phenomenon is attributable to the accumulation and migration of oxygen vacancies at the interface of CZO/NSTO. Our results demonstrated a pathway towards making multifunctional devices that simultaneously exhibit resistive switching, photoelectricity, and ferromagnetism.

EDITORIAL: A tribute to Zhores Ivanovitch Alferov, a pioneer who changed our way of daily life A tribute to Zhores Ivanovitch Alferov, a pioneer who changed our way of daily life

NASA Astrophysics Data System (ADS)

Bimberg, Dieter

2011-01-01

Can you think of living without the World Wide Web, e-mail, DVDs, CD-ROMs, the bar code scanner, mobile phones or high-efficiency solar cells? I cannot. These systems are part of the backbone of our modern civilization. And they have something in common: they are all devices based on the double heterostructure. Zhores Alferov (and independently Herbert Krömer) proposed its concept and its usefulness for semiconductor lasers in 1962, two years after the first demonstration of the first (solid-state) laser. InP-based double heterostructure lasers are today, and have been for more than 20 years, the enabling light sources for optical fiber communication, sending their photonic bits around the globe at enormous and ever-increasing rates. In 2009, 61% of the 500+ billion world market for laser systems was based on semiconductor lasers. Obviously a straightforward success story? Not really at the beginning, rather the kind of survival story of somebody who was producing an enormous number of ideas and trying to make them reality; his production of ideas has not yet stopped after 60 years of professional life. Let's have a look back at how it started. Zhores Alferov was born 80 years ago on 15 March 1930 in Vitebsk in eastern Byelorussia, an area where 47 years before him the famous painter Marc Chagall had been born. His parents believed in socialism and named him after the French socialist Jean Jaurès, the author of J'accuse. The war came when he was an adolescent and his admired older and only brother was killed in 1944 at the battle of Stalingrad. Despite the turmoil of war and post-war times he finished school successfully on time, was admitted to the V I Uljanov Electrotechnical Institute in Leningrad, studied physics and graduated there in 1952. In 1953 he started work at the Physico-Technical Institute in Leningrad, founded by Abraham Ioffe, the first PhD student of Conrad Rèntgen in Munich. Ioffe had initiated systematic studies of semiconductors at this institute in the thirties, leading to many important discoveries such as the metal-semiconductor contact, work that Ioffe did together with Frenkel. Seven years later, in 1960, another completely different direction of research created excitement and interest across the world, including for Zhores Alferov. The first demonstration of laser action in ruby by Theodore Maiman, verifying Einstein's prediction of stimulated emission (1917), was followed within 18 months by the demonstration of gas lasers and semiconductor diode lasers based on GaAs homojunctions. Solid-state and gas lasers from the very beginning operated at room temperature (RT), but semiconductor lasers did not. They operated only at the temperature of liquid He, at 4 K. Gas and solid-state lasers very quickly found a wide range of applications. Not so semiconductor lasers, being judged at that time to be useless. The whole world however, recognized at once how important it would be to have RT semiconductor lasers. Teams at Bell Labs, IBM, RCA etc. entered the race, but failed for a long time. The problem—as we now know—was the p-n homojunction. In a forward-biased homojunction the charge carriers are widely spread in space at room temperature with low peak carrier density. In addition, there are enormous losses of the light emitted in the junction. At that time a new subject appeared in the life of Zhores Alferov: the heterojunctions. Heterojunctions had already appeared on the horizon in the early days of electronics, starting in 1951 with theoretical proposals for improved transistors by Shockley, Krömer and others. Single heterostructures were tried for laser action and the temperature limit was pushed up to 77 K, an enormous progression compared with 4 K, but still completely academic. In 1963, Zhores Alferov and Rudi Kazarinov in a patent application, and Herbert Krömer in a publication, proposed independently of each other to confine carriers in a double heterostructure, leading to an increase of carrier density by several orders of magnitude in the confinement layer. Alferov and Kazarinov called it the superinjection effect. But there was no practical realization. The advantages of such a structure, as pointed out a little later by Zhores Alferov in 1966, would be efficient injection and localization of charge carriers in a material having a narrower energy gap surrounded by wide-gap material, and additionally, guidance of the emitted light by index of refraction steps at the heterojunction. The proposal was a theoretical one and the first attempts at experimental realization went in an unsuccessful direction, as may happen to any of us: the combination of indirect semiconductors with direct ones to form a heterostructure. Alferov and Kazarinov's patent was then considered by some in the community as paperwork. Then suddenly, material science and device physics merged. Zhores Alferov became aware that other researchers at Ioffe had successfully grown the ternary compound AlGaAs, lattice-matched to GaAs, but with a larger band gap. He had the instinct to realize how important that progress was. Ideally perfect AlGaAs/GaAs/AlGaAs double heterostructures were grown on his initiative by liquid-phase epitaxy, lasers were processed and were observed to operate suddenly at RT. In 1968, results on the first double heterostructure laser operating at RT were submitted to Soviet Physics-Semiconductors. That was the breakthrough which ignited an explosion of work on many different applications of semiconductor lasers, which diffused, year by year, more and more into our daily life. Often, we do not realize that the same strategic principle exists, here the double heterostructure, which makes many completely different devices and systems work. Already in 1967, Zhores Alferov had started to discuss the first applications of such structures for electronic devices. A hetero-bipolar transistor was realized in 1973, nowadays a high-power and frequency-enabling device, e.g. for satellite telephones, in some ways continuing his work for the candidate degree when he had developed power rectifiers based on Ge and Si. Then, in 1970, he presented the first solar cells with efficiency >30% based on heterojunctions. Soon the Soviet Space Administration became aware of these results, and in 1986 the Soviet space station MIR was partially powered by solar cells developed by Alferov and Andre'ev. Finally in 1992, a joint research program between the author of this Editorial and Zhores Alferov, being both guest scientists at the same time at the University of California, on semiconductor quantum dots for the active zone of (nowadays many different) optoelectronic devices was proposed and inaugurated. Quantum dot lasers today have the lowest threshold current density of any semiconductor lasers. They are far superior to quantum wells as amplifiers, and their nonlinear optical applications such as cross-gain modulation in local area networks, present the basis for novel types of solar cells, nanoflash memories, single q-bit emitters for quantum cryptography etc. The story of inventing a concept and inventing applications seems to repeat in some way. This Semiconductor Science and Technology special edition presents contributions from about 100 researchers around the globe, who use in their work concepts invented by Zhores Alferov during his long active scientific life spanning six decades. They would like to pay a tribute to him and honour him on the occasion of his 80th birthday. This very personal way of saying thank you thus adds to the many prizes he has received during the past 40 years, starting with the Ballantine Gold Medal of the Franklin Institute, via the Nobel Prize for Physics 2000 to many honorary doctorates from institutes around the world.

Enhancement of photovoltaic effects and photoconductivity observed in Co-doped amorphous carbon/silicon heterostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jiang, Y. C.; Gao, J., E-mail: jugao@hku.hk

2016-08-22

Co-doped amorphous carbon (Co-C)/silicon heterostructures were fabricated by growing Co-C films on n-type Si substrates using pulsed laser deposition. A photovoltaic effect (PVE) has been observed at room temperature. Open-circuit voltage V{sub oc} = 320 mV and short-circuit current density J{sub sc }= 5.62 mA/cm{sup 2} were measured under illumination of 532-nm light with the power of 100 mW/cm{sup 2}. In contrast, undoped amorphous carbon/Si heterostructures revealed no significant PVE. Based on the PVE and photoconductivity (PC) investigated at different temperatures, it was found that the energy conversion efficiency increased with increasing the temperature and reached the maximum at room temperature, while the photoconductivity showed amore » reverse temperature dependence. The observed competition between PVE and PC was correlated with the way to distribute absorbed photons. The possible mechanism, explaining the enhanced PVE and PC in the Co-C/Si heterostructures, might be attributed to light absorption enhanced by localized surface plasmons in Co nanoparticles embedded in the carbon matrix.« less

InGaN/GaN dot-in-nanowire monolithic LEDs and lasers on (001) silicon

NASA Astrophysics Data System (ADS)

Bhattacharya, P.; Hazari, A.; Jahangir, S.

2017-02-01

GaN-based nanowire arrays have been grown on (001)Si substrate by plasma-assisted molecular beam epitaxy and their structural and optical properties have been determined. InxGa1-xN disks inserted in the nanowires behave as quantum dots with emission ranging from visible to near-infrared. We have exploited these nanowire heterostructure arrays to realize light-emitting diodes and diode lasers in which the quantum dots form the active light emitting media. The fabrication and characteristics of 630nm light-emitting diodes and 1.3μm edge-emitting diode lasers are described.

GaSbBi/GaSb quantum well laser diodes

NASA Astrophysics Data System (ADS)

Delorme, O.; Cerutti, L.; Luna, E.; Narcy, G.; Trampert, A.; Tournié, E.; Rodriguez, J.-B.

2017-05-01

We report on the structural and optical properties of GaSbBi single layers and GaSbBi/GaSb quantum well heterostructures grown by molecular beam epitaxy on GaSb substrates. Excellent crystal quality and room-temperature photoluminescence are achieved in both cases. We demonstrate laser operation from laser diodes with an active zone composed of three GaSb0.885Bi0.115/GaSb quantum wells. These devices exhibit continuous-wave lasing at 2.5 μm at 80 K, and lasing under pulsed operation at room-temperature near 2.7 μm.

Lateral mode control in edge-emitting lasers with modified mirrors

NASA Astrophysics Data System (ADS)

Payusov, A.; Serin, A.; Mukhin, I.; Shernyakov, Y.; Zadiranov, Y.; Maximov, M.; Gordeev, N.

2017-11-01

We present a study on lateral mode control in edge-emitting lasers with profiled mirror reflectivity. The object was to eliminate high-order lateral modes in conventional ridge-waveguide InAs/InGaAs QD (quantum dot) lasers with the stripe width of 10 μm. We have used a FIB (focused ion beam) technique to selectively etch windows in the AR (anti-reflection) facet coatings in order to introduce extra mirror losses for the high order modes. This approach allowed us to eliminate the first-order mode lasing without deterioration of the laser parameters. We suppose that further optimisation of the laser heterostructure and window designs may lead to a pure lateral single-mode lasing in the broadened ridge waveguides.

Monolithic narrow-linewidth InGaAsP semiconductor laser for coherent optical communications

NASA Technical Reports Server (NTRS)

Palfrey, S. L.; Enstrom, R. E.; Longeway, P. A.

1989-01-01

A design for a monolithic narrow-linewidth InGaAsP diode laser has been developed using a multiple-quantum-well (MQW) extended-passive-cavity distributed-Bragg-reflector (DBR) laser design. Theoretical results indicate that this structure has the potential for a linewidth of 100 kHz or less. To realize this device, a number of the fabrication techniques required to integrate low-loss passive waveguides with active regions have been developed using a DBR laser structure. In addition, the MOCVD growth of InGaAs MQW laser structures has been developed, and threshold current densities as low as 1.6 kA/sq cm have been obtained from broad-stripe InGaAs/InGaAsP separate-confinement-heterostructure MQW lasers.

Preface: Heterostructure terahertz devices

NASA Astrophysics Data System (ADS)

Ryzhii, Victor

2008-08-01

The terahertz (THz) range of frequencies is borderline between microwave electronics and photonics. It corresponds to the frequency bands of molecular and lattice vibrations in gases, fluids, and solids. The importance of the THz range is in part due to numerous potential and emerging applications which include imaging and characterization, detection of hazardous substances, environmental monitoring, radio astronomy, covert inter-satellite communications, as well as biological and medical applications. During the last decades marked progress has been achieved in the development, fabrication, and practical implementation of THz devices and systems. This is primarily owing to the utilization of gaseous and free electron lasers and frequency converters using nonlinear optical phenomena as sources of THz radiation. However, such devices and hence the systems based on them are fairly cumbersome. This continuously stimulates an extensive search for new compact and efficient THz sources based on semiconductor heterostructures. Despite tremendous efforts lasting several decades, the so-called THz gap unbridged by semiconductor heterostructure electron and optoelectron devices still exists providing appropriate levels of power of the generated THz radiation. The invention and realization of quantum cascade lasers made of multiple quantum-well heterostructures already resulted in the partial solution of the problem in question, namely, in the successful coverage of the high-frequency portion of the THz gap (2-3 THz and higher). Further advancement to lower frequencies meets, perhaps, fundamental difficulties. All this necessitates further extensive theoretical and experimental studies of more or less traditional and novel semiconductor heterostructures as a basis for sources of THz radiation. This special issue includes 11 excellent original papers submitted by several research teams representing 14 institutions in Europe, America, and Asia. Several device concepts which appear to be feasible for the realization of novel THz devices are put forward and discussed in this collection of experimental and theoretical papers. The issue starts with a paper by Akis et al which deals with a theoretical study of the operation of high electron mobility transistors at THz frequencies. For this, the authors use the numerical simulations using a full-band, cellular Monte Carlo transport model coupled to a full Poisson equation solver. The next three papers by Reklaitis, Balocco et al , and Mikhailov and Zieglel are devoted to considering new ideas related to frequency multiplication which can lead to the up-conversion of ac signals to THz frequencies. For this purpose, different concepts of the devices based on nontrivial heterostructures and materials are proposed and studied. The paper by Knap et al provides an overview of the authors experimental results on the plasma effects infield effect transistors. These effects can be used for the resonant detection of THz radiation and its emission. The observed THz emission from more complex device structures, namely, dual grating gate heterostrucures, which is attributed to the self-excitation of plasma waves, is discussed by Otsuji and his co-workers. The following two papers (by Ryzhii et al and Popov et al) deal with the development of device models and using the one which could explain the results of experimental observations described in the paper by Otsuji et al . In both these papers, the mechanisms of plasma wave instability in spatially periodic heterostructures are analyzed. In the paper by Starikov and his colleagues, an idea to utilize the transit-time resonance assisted by optical phonon emissionis revived and revisited. As demonstrated, this mechanism in the electron system in nitride-made heterostructures can lead to negative dynamic conductivity in the THz range of frequencies and, hence, be used for the generation of THz radiation. In the paper by Millithaler et al, Monte Carlo simulations are used to study the voltage fluctuationsaffected by the plasma oscillations in two-terminal heterostructures with an n-type InGaAs channel.Finally, the paper by Liu {\\it et al} is devoted to the concept of quantum cascade THz lasers using resonant tunneling in quantum dot systems instead of the standard multiple quantum well heterostructures.I would like to express my deep gratitude to all of the authors for having submitted high-quality papers. I am confident that this special issue will substantially promote further progress in THz technology.

Femtosecond laser inscribed cladding waveguide lasers in Nd:LiYF4 crystals

NASA Astrophysics Data System (ADS)

Li, Shi-Ling; Huang, Ze-Ping; Ye, Yong-Kai; Wang, Hai-Long

2018-06-01

Depressed circular cladding, buried waveguides were fabricated in Nd:LiYF4 crystals with an ultrafast Yb-doped fiber master-oscillator power amplifier laser. Waveguides were optimized by varying the laser writing conditions, such as pulse energy, focus depth, femtosecond laser polarization and scanning velocity. Under optical pump at 799 nm, cladding waveguides showed continuous-wave laser oscillation at 1047 nm. Single- and multi-transverse modes waveguide laser were realized by varying the waveguide diameter. The maximum output power in the 40 μm waveguide is ∼195 mW with a slope efficiency of 34.3%. The waveguide lasers with hexagonal and cubic cladding geometry were also realized.

Exciton properties in zincblende InGaN-GaN quantum wells under the effects of intense laser fields

PubMed Central

2012-01-01

In this work, we study the exciton states in a zincblende InGaN/GaN quantum well using a variational technique. The system is considered under the action of intense laser fields with the incorporation of a direct current electric field as an additional external probe. The effects of these external influences as well as of the changes in the geometry of the heterostructure on the exciton binding energy are discussed in detail. PMID:22937963

Exciton properties in zincblende InGaN-GaN quantum wells under the effects of intense laser fields.

PubMed

Duque, Carlos M; Mora-Ramos, Miguel E; Duque, Carlos A

2012-08-31

: In this work, we study the exciton states in a zincblende InGaN/GaN quantum well using a variational technique. The system is considered under the action of intense laser fields with the incorporation of a direct current electric field as an additional external probe. The effects of these external influences as well as of the changes in the geometry of the heterostructure on the exciton binding energy are discussed in detail.

MOCVD-Grown InGaAsP Double Heterostructure Diode Lasers

DTIC Science & Technology

1993-08-01

assuming refractive index and its dispersion for InGaAsP and InGaP corresponding to the known values for AIGaAs compounds with the same bandgap [13...in the refractive index between the waveguide and cladding layers provides light confinement within the optical cavity. Separate optical and

Computational design of short pulse laser driven iron opacity experiments

DOE PAGES

Martin, M. E.; London, R. A.; Goluoglu, S.; ...

2017-02-23

Here, the resolution of current disagreements between solar parameters calculated from models and observations would benefit from the experimental validation of theoretical opacity models. Iron's complex ionic structure and large contribution to the opacity in the radiative zone of the sun make iron a good candidate for validation. Short pulse lasers can be used to heat buried layer targets to plasma conditions comparable to the radiative zone of the sun, and the frequency dependent opacity can be inferred from the target's measured x-ray emission. Target and laser parameters must be optimized to reach specific plasma conditions and meet x-ray emissionmore » requirements. The HYDRA radiation hydrodynamics code is used to investigate the effects of modifying laser irradiance and target dimensions on the plasma conditions, x-ray emission, and inferred opacity of iron and iron-magnesium buried layer targets. It was determined that plasma conditions are dominantly controlled by the laser energy and the tamper thickness. The accuracy of the inferred opacity is sensitive to tamper emission and optical depth effects. Experiments at conditions relevant to the radiative zone of the sun would investigate the validity of opacity theories important to resolving disagreements between solar parameters calculated from models and observations.« less

Computational design of short pulse laser driven iron opacity experiments

DOE Office of Scientific and Technical Information (OSTI.GOV)

Martin, M. E.; London, R. A.; Goluoglu, S.

Here, the resolution of current disagreements between solar parameters calculated from models and observations would benefit from the experimental validation of theoretical opacity models. Iron's complex ionic structure and large contribution to the opacity in the radiative zone of the sun make iron a good candidate for validation. Short pulse lasers can be used to heat buried layer targets to plasma conditions comparable to the radiative zone of the sun, and the frequency dependent opacity can be inferred from the target's measured x-ray emission. Target and laser parameters must be optimized to reach specific plasma conditions and meet x-ray emissionmore » requirements. The HYDRA radiation hydrodynamics code is used to investigate the effects of modifying laser irradiance and target dimensions on the plasma conditions, x-ray emission, and inferred opacity of iron and iron-magnesium buried layer targets. It was determined that plasma conditions are dominantly controlled by the laser energy and the tamper thickness. The accuracy of the inferred opacity is sensitive to tamper emission and optical depth effects. Experiments at conditions relevant to the radiative zone of the sun would investigate the validity of opacity theories important to resolving disagreements between solar parameters calculated from models and observations.« less

Ferroelectricity in Pb 1+δZrO 3 Thin Films

DOE PAGES

Gao, Ran; Reyes-Lillo, Sebastian E.; Xu, Ruijuan; ...

2017-07-16

Antiferroelectric PbZrO 3 is being considered for a wide range of applications where the competition between centrosymmetric and noncentrosymmetric phases is important to the response. Here, we focus on the epitaxial growth of PbZrO 3 thin films and understanding the chemistry structure coupling in Pb 1+δ ZrO 3 (δ = 0, 0.1, 0.2). High-quality, single-phase Pb 1+δZrO 3 films are synthesized via pulsed-laser deposition. Though no significant lattice parameter change is observed in X-ray studies, electrical characterization reveals that while the PbZrO 3 and Pb 1.1ZrO 3 heterostructures remain intrinsically antiferroelectric, the Pb 1.2ZrO 3 heterostructures exhibit a hysteresis loopmore » indicative of ferroelectric response. Furthermore X-ray scattering studies reveal strong quarter-order diffraction peaks in PbZrO 3 and Pb 1.1ZrO 3 heterostructures indicative of antiferroelectricity, while no such peaks are observed for Pb 1.2ZrO 3 heterostructures. Density functional theory calculations suggest the large cation nonstoichiometry is accommodated by incorporation of antisite Pb-Zr defects, which drive the Pb 1.2ZrO 3 heterostructures to a ferroelectric phase with R3c symmetry. In the end, stabilization of metastable phases in materials via chemical nonstoichiometry and defect engineering enables a novel route to manipulate the energy of the ground state of materials and the corresponding material properties.« less

Buried Object Detection Method Using Optimum Frequency Range in Extremely Shallow Underground

NASA Astrophysics Data System (ADS)

Sugimoto, Tsuneyoshi; Abe, Touma

2011-07-01

We propose a new detection method for buried objects using the optimum frequency response range of the corresponding vibration velocity. Flat speakers and a scanning laser Doppler vibrometer (SLDV) are used for noncontact acoustic imaging in the extremely shallow underground. The exploration depth depends on the sound pressure, but it is usually less than 10 cm. Styrofoam, wood (silver fir), and acrylic boards of the same size, different size styrofoam boards, a hollow toy duck, a hollow plastic container, a plastic container filled with sand, a hollow steel can and an unglazed pot are used as buried objects which are buried in sand to about 2 cm depth. The imaging procedure of buried objects using the optimum frequency range is given below. First, the standardized difference from the average vibration velocity is calculated for all scan points. Next, using this result, underground images are made using a constant frequency width to search for the frequency response range of the buried object. After choosing an approximate frequency response range, the difference between the average vibration velocity for all points and that for several points that showed a clear response is calculated for the final confirmation of the optimum frequency range. Using this optimum frequency range, we can obtain the clearest image of the buried object. From the experimental results, we confirmed the effectiveness of our proposed method. In particular, a clear image of the buried object was obtained when the SLDV image was unclear.

Current transport in graphene/AlGaN/GaN vertical heterostructures probed at nanoscale.

PubMed

Fisichella, Gabriele; Greco, Giuseppe; Roccaforte, Fabrizio; Giannazzo, Filippo

2014-08-07

Vertical heterostructures combining two or more graphene (Gr) layers separated by ultra-thin insulating or semiconductor barriers represent very promising systems for next generation electronics devices, due to the combination of high speed operation with wide-range current modulation by a gate bias. They are based on the specific mechanisms of current transport between two-dimensional-electron-gases (2DEGs) in close proximity. In this context, vertical devices formed by Gr and semiconductor heterostructures hosting an "ordinary" 2DEG can be also very interesting. In this work, we investigated the vertical current transport in Gr/Al(0.25)Ga(0.75)N/GaN heterostructures, where Gr is separated from a high density 2DEG by a ∼ 24 nm thick AlGaN barrier layer. The current transport from Gr to the buried 2DEG was characterized at nanoscale using conductive atomic force microscopy (CAFM) and scanning capacitance microscopy (SCM). From these analyses, performed both on Gr/AlGaN/GaN and on AlGaN/GaN reference samples using AFM tips with different metal coatings, the Gr/AlGaN Schottky barrier height ΦB and its lateral uniformity were evaluated, as well as the variation of the carrier densities of graphene (ngr) and AlGaN/GaN 2DEG (ns) as a function of the applied bias. A low Schottky barrier (∼ 0.40 eV) with excellent spatial uniformity was found at the Gr/AlGaN interface, i.e., lower compared to the measured values for metal/AlGaN contacts, which range from ∼ 0.6 to ∼ 1.1 eV depending on the metal workfunction. The electrical behavior of the Gr/AlGaN contact has been explained by Gr interaction with AlGaN donor-like surface states located in close proximity, which are also responsible of high n-type Gr doping (∼ 1.3 × 10(13) cm(-2)). An effective modulation of ns by the Gr Schottky contact was demonstrated by capacitance analysis under reverse bias. From this basic understanding of transport properties in Gr/AlGaN/GaN heterostructures, novel vertical field effect transistor concepts with high operating speed and I(on)/I(off) ratio can be envisaged.

Imaging and detection of mines from acoustic measurements

NASA Astrophysics Data System (ADS)

Witten, Alan J.; DiMarzio, Charles A.; Li, Wen; McKnight, Stephen W.

1999-08-01

A laboratory-scale acoustic experiment is described where a buried target, a hockey puck cut in half, is shallowly buried in a sand box. To avoid the need for source and receiver coupling to the host sand, an acoustic wave is generated in the subsurface by a pulsed laser suspended above the air-sand interface. Similarly, an airborne microphone is suspended above this interface and moved in unison with the laser. After some pre-processing of the data, reflections for the target, although weak, could clearly be identified. While the existence and location of the target can be determined by inspection of the data, its unique shape can not. Since target discrimination is important in mine detection, a 3D imaging algorithm was applied to the acquired acoustic data. This algorithm yielded a reconstructed image where the shape of the target was resolved.

Strain engineering of van der Waals heterostructures.

PubMed

Vermeulen, Paul A; Mulder, Jefta; Momand, Jamo; Kooi, Bart J

2018-01-18

Modifying the strain state of solids allows control over a plethora of functional properties. The weak interlayer bonding in van der Waals (vdWaals) materials such as graphene, hBN, MoS 2 , and Bi 2 Te 3 might seem to exclude strain engineering, since strain would immediately relax at the vdWaals interfaces. Here we present direct observations of the contrary by showing growth of vdWaals heterostructures with persistent in-plane strains up to 5% and we show that strain relaxation follows a not yet reported process distinctly different from strain relaxation in three-dimensionally bonded (3D) materials. For this, 2D bonded Bi 2 Te 3 -Sb 2 Te 3 and 2D/3D bonded Bi 2 Te 3 -GeTe multilayered films are grown using Pulsed Laser Deposition (PLD) and their structure is monitored in situ using Reflective High Energy Electron Diffraction (RHEED) and post situ analysis is performed using Transmission Electron Microscopy (TEM). Strain relaxation is modeled and found to solely depend on the layer being grown and its initial strain. This insight demonstrates that strain engineering of 2D bonded heterostructures obeys different rules than hold for epitaxial 3D materials and opens the door to precise tuning of the strain state of the individual layers to optimize functional performance of vdWaals heterostructures.

INTERNATIONAL CONFERENCE ON SEMICONDUCTOR INJECTION LASERS SELCO-87: Far-field pattern of transverse modes in LOC structures

NASA Astrophysics Data System (ADS)

Petrescu-Prahova, I. B.; Lazanu, S.; Lepşa, M.; Mihailovici, P.

1988-11-01

An investigation was made of the emission from GaAlAs large-optical-cavity (LOC) laser heterostructures with an active layer more than 2 μm thick. The far-field radiation pattern, representing a superposition of the fundamental and several higher-order transverse modes, had a central maximum. The gain, mirror losses, near- and far-field patterns of each propagation mode, as well as mode competition were analyzed on the basis of a simple model. The far-field pattern of single modes was determined by selecting separate spectral intervals from the total emission spectrum of the laser.

The concept for realization of quantum-cascade lasers emitting at 7.5 μm wavelength

NASA Astrophysics Data System (ADS)

Novikov, I. I.; Babichev, A. V.; Bugrov, V. E.; Gladyshev, A. G.; Karachinsky, L. Ya; Kolodeznyi, E. S.; Kurochkin, A. S.; Savelyev, A. V.; Sokolovskii, G. S.; Egorov, A. Yu

2017-11-01

We consider the advantages and disadvantages of various designs of waveguide for heterostructures of quantum cascade lasers (QCL) in a spectral region of 7.5 μm. Based on a numerical calculation we make a comparison of light wave distribution in QCL waveguides with different designs. We demonstrate the benefits of practical QCL realization with an extended five-layered waveguide formed by introducing extra layers of InGaAs, which allows to modify the spatial distribution of the light wave and get the rectangular shape of the spatial distribution of light wave intensity in the laser active area.

Laser emission from diode-pumped Nd:YAG ceramic waveguide lasers realized by direct femtosecond-laser writing technique.

PubMed

Salamu, Gabriela; Jipa, Florin; Zamfirescu, Marian; Pavel, Nicolaie

2014-03-10

We report on realization of buried waveguides in Nd:YAG ceramic media by direct femtosecond-laser writing technique and investigate the waveguides laser emission characteristics under the pump with fiber-coupled diode lasers. Laser pulses at 1.06 μm with energy of 2.8 mJ for the pump with pulses of 13.1-mJ energy and continuous-wave output power of 0.49 W with overall optical efficiency of 0.13 were obtained from a 100-μm diameter circular cladding waveguide realized in a 0.7-at.% Nd:YAG ceramic. A circular waveguide of 50-μm diameter yielded laser pulses at 1.3 μm with 1.2-mJ energy.

Improving the beam quality of high-power laser diodes by introducing lateral periodicity into waveguides

NASA Astrophysics Data System (ADS)

Sobczak, Grzegorz; DÄ browska, ElŻbieta; Teodorczyk, Marian; Kalbarczyk, Joanna; MalÄ g, Andrzej

2013-01-01

Low quality of the optical beam emitted by high-power laser diodes is the main disadvantage of these devices. The two most important reasons are highly non-Gaussian beam profile with relatively wide divergence in the junction plane and the filamentation effect. Designing laser diode as an array of narrow, close to each other single-mode waveguides is one of the solutions to this problem. In such devices called phase locked arrays (PLA) there is no room for filaments formation. The consequence of optical coupling of many single-mode waveguides is the device emission in the form of few almost diffraction limited beams. Because of losses in regions between active stripes the PLA devices have, however, somewhat higher threshold current and lower slope efficiencies compared to wide-stripe devices of similar geometry. In this work the concept of the high-power laser diode resonator consisted of joined PLA and wide stripe segments is proposed. Resulting changes of electro-optical characteristics of PLA are discussed. The devices are based on the asymmetric heterostructure designed for improvement of the catastrophic optical damage threshold as well as thermal and electrical resistances. Due to reduced distance from the active layer to surface in this heterostructure, better stability of current (and gain) distribution with changing drive level is expected. This could lead to better stability of optical field distribution and supermodes control. The beam divergence reduction in the direction perpendicular of the junction plane has been also achieved.

Nanoscale control of an interfacial metal-insulator transition at room temperature.

PubMed

Cen, C; Thiel, S; Hammerl, G; Schneider, C W; Andersen, K E; Hellberg, C S; Mannhart, J; Levy, J

2008-04-01

Experimental and theoretical investigations have demonstrated that a quasi-two-dimensional electron gas (q-2DEG) can form at the interface between two insulators: non-polar SrTiO3 and polar LaTiO3 (ref. 2), LaAlO3 (refs 3-5), KTaO3 (ref. 7) or LaVO3 (ref. 6). Electronically, the situation is analogous to the q-2DEGs formed in semiconductor heterostructures by modulation doping. LaAlO3/SrTiO3 heterostructures have recently been shown to exhibit a hysteretic electric-field-induced metal-insulator quantum phase transition for LaAlO3 thicknesses of 3 unit cells. Here, we report the creation and erasure of nanoscale conducting regions at the interface between two insulating oxides, LaAlO3 and SrTiO3. Using voltages applied by a conducting atomic force microscope (AFM) probe, the buried LaAlO3/SrTiO3 interface is locally and reversibly switched between insulating and conducting states. Persistent field effects are observed using the AFM probe as a gate. Patterning of conducting lines with widths of approximately 3 nm, as well as arrays of conducting islands with densities >10(14) inch(-2), is demonstrated. The patterned structures are stable for >24 h at room temperature.

Strain field determination in III-V heteroepitaxy coupling finite elements with experimental and theoretical techniques at the nanoscale

NASA Astrophysics Data System (ADS)

Florini, Nikoletta; Dimitrakopulos, George P.; Kioseoglou, Joseph; Pelekanos, Nikos T.; Kehagias, Thomas

2017-04-01

We are briefly reviewing the current status of elastic strain field determination in III-V heteroepitaxial nanostructures, linking finite elements (FE) calculations with quantitative nanoscale imaging and atomistic calculation techniques. III-V semiconductor nanostructure systems of various dimensions are evaluated in terms of their importance in photonic and microelectronic devices. As elastic strain distribution inside nano-heterostructures has a significant impact on the alloy composition, and thus their electronic properties, it is important to accurately map its components both at the interface plane and along the growth direction. Therefore, we focus on the determination of the stress-strain fields in III-V heteroepitaxial nanostructures by experimental and theoretical methods with emphasis on the numerical FE method by means of anisotropic continuum elasticity (CE) approximation. Subsequently, we present our contribution to the field by coupling FE simulations on InAs quantum dots (QDs) grown on (211)B GaAs substrate, either uncapped or buried, and GaAs/AlGaAs core-shell nanowires (NWs) grown on (111) Si, with quantitative high-resolution transmission electron microscopy (HRTEM) methods and atomistic molecular dynamics (MD) calculations. Full determination of the elastic strain distribution can be exploited for band gap tailoring of the heterostructures by controlling the content of the active elements, and thus influence the emitted radiation.

Fast Electron Deposition in Laser Shock Compressed Plastic Targets

NASA Astrophysics Data System (ADS)

Hall, T. A.; Ellwi, S.; Batani, D.; Bernardinello, A.; Masella, V.; Koenig, M.; Benuzzi, A.; Krishnan, J.; Pisani, F.; Djaoui, A.; Norreys, P.; Neely, D.; Rose, S.; Key, M. H.; Fews, P.

1998-08-01

We present the first results of fast electron deposition in a laser shock compressed plasma. The interaction of a 3 ps, 15 J laser pulse with solid polyethylene targets is used to produce fast electrons on one side of foil targets and a 2 ns duration laser pulse is used to drive a shock wave into the target from the opposite side. Kα emission from chlorine fluor buried layers is used to measure the electron transport. The hot electron range in the shock compressed plastic is found to be approximately twice as large as the range in the solid density plastic.

Laser applications in meteorology and earth and atmospheric remote sensing; Proceedings of the Meeting, Los Angeles, CA, Jan. 16-18, 1989

NASA Technical Reports Server (NTRS)

Sokoloski, Martin M. (Editor)

1989-01-01

Various papers on laser applications in meteorology and earth and atmospheric remote sensing are presented. The individual topics addressed include: solid state lasers for the mid-IR region, tunable chromium lasers, GaInAsSb/AlGaAsSb injection lasers for remote sensing applications, development and design of an airborne autonomous wavemeter for laser tuning, fabrication of lightweight Si/SiC lidar mirrors, low-cost double heterostructure and quantum-well laser array development, nonlinear optical processes for the mid-IR region, simulated space-based Doppler lidar performance in regions of backscatter inhomogeneities, design of CO2 recombination catalysts for closed-cycle CO2 lasers, density measurements with combined Raman-Rayleigh lidar, geodynamics applications of spaceborne laser ranging, use of aircraft laser ranging data for forest mensuration, remote active spectrometer, multiwavelngth and triple CO2 lidars for trace gas detection, analysis of laser diagnostics in plumes, laser atmospheric wind sounder, compact Doppler lidar system using commercial off-the-shelf components, and preliminary design for a laser atmospheric wind sounder.

INTERNATIONAL CONFERENCE ON SEMICONDUCTOR INJECTION LASERS SELCO-87: Degradation phenomena in laser diodes

NASA Astrophysics Data System (ADS)

Beister, G.; Krispin, P.; Maege, J.; Richter, G.; Weber, H.; Rechenberg, I.

1988-11-01

Accelerated tests on GaAlAs/GaAs double heterostructure laser diodes showed, in agreement with earlier results on light-emitting diodes, that ageing appeared in three distinct forms: initial and slow degradation stages, both obeying a logarithmic time dependence, and a superimposed "gradation" (enhancement of the output power). Measurements made by the method of deep level transient spectroscopy during the accelerated tests on these lasers, operated as light-emitting diodes, revealed the appearance right from the beginning of B levels attributed to the antisite GaAs defects. The B levels appeared again in diodes tested in the lasing mode. In the case of a group of 21 laser diodes the mean time-to-failure was 9000 h at 70°C for 5 mW (in accordance with the Weibull statistics of degradation rates).

Laser materials for the 0.67-microns to 2.5-microns range

NASA Technical Reports Server (NTRS)

Toda, Minoru; Zamerowski, Thomas J.; Ladany, Ivan; Martinelli, Ramon U.

1987-01-01

Basic requirements for obtaining injection laser action in III-V semiconductors are discussed briefly. A detailed review is presented of materials suitable for lasers emitting at 0.67, 1.44, 1.93, and 2.5 microns. A general approach to the problem is presented, based on curves of materials properties published by Sasaki et al. It is also shown that these curves, although useful, may need correction in certain ranges. It is deduced that certain materials combinations, either proposed in the literature or actually tried, are not appropriate for double heterostructure lasers, because the refractive index of the cladding material is higher than the index of the active material, thus resulting in no waveguiding, and high threshold currents. Recommendations are made about the most promising approach to the achievement of laser action in the four wavelengths mentioned above.

Terahertz spin current pulses controlled by magnetic heterostructures

NASA Astrophysics Data System (ADS)

Kampfrath, T.; Battiato, M.; Maldonado, P.; Eilers, G.; Nötzold, J.; Mährlein, S.; Zbarsky, V.; Freimuth, F.; Mokrousov, Y.; Blügel, S.; Wolf, M.; Radu, I.; Oppeneer, P. M.; Münzenberg, M.

2013-04-01

In spin-based electronics, information is encoded by the spin state of electron bunches. Processing this information requires the controlled transport of spin angular momentum through a solid, preferably at frequencies reaching the so far unexplored terahertz regime. Here, we demonstrate, by experiment and theory, that the temporal shape of femtosecond spin current bursts can be manipulated by using specifically designed magnetic heterostructures. A laser pulse is used to drive spins from a ferromagnetic iron thin film into a non-magnetic cap layer that has either low (ruthenium) or high (gold) electron mobility. The resulting transient spin current is detected by means of an ultrafast, contactless amperemeter based on the inverse spin Hall effect, which converts the spin flow into a terahertz electromagnetic pulse. We find that the ruthenium cap layer yields a considerably longer spin current pulse because electrons are injected into ruthenium d states, which have a much lower mobility than gold sp states. Thus, spin current pulses and the resulting terahertz transients can be shaped by tailoring magnetic heterostructures, which opens the door to engineering high-speed spintronic devices and, potentially, broadband terahertz emitters.

Ultrafast Photoinduced Multimode Antiferromagnetic Spin Dynamics in Exchange-Coupled Fe/RFeO3 (R = Er or Dy) Heterostructures.

PubMed

Tang, Jin; Ke, Yajiao; He, Wei; Zhang, Xiangqun; Zhang, Wei; Li, Na; Zhang, Yongsheng; Li, Yan; Cheng, Zhaohua

2018-05-25

Antiferromagnetic spin dynamics is important for both fundamental and applied antiferromagnetic spintronic devices; however, it is rarely explored by external fields because of the strong exchange interaction in antiferromagnetic materials. Here, the photoinduced excitation of ultrafast antiferromagnetic spin dynamics is achieved by capping antiferromagnetic RFeO 3 (R = Er or Dy) with an exchange-coupled ferromagnetic Fe film. Compared with antiferromagnetic spin dynamics of bare RFeO 3 orthoferrite single crystals, which can be triggered effectively by ultrafast laser heating just below the phase transition temperature, the ultrafast photoinduced multimode antiferromagnetic spin dynamic modes, for exchange-coupled Fe/RFeO 3 heterostructures, including quasiferromagnetic resonance, impurity, coherent phonon, and quasiantiferromagnetic modes, are observed in a temperature range of 10-300 K. These experimental results not only offer an effective means to trigger ultrafast antiferromagnetic spin dynamics of rare-earth orthoferrites, but also shed light on the ultrafast manipulation of antiferromagnetic magnetization in Fe/RFeO 3 heterostructures. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Core/multishell nanowire heterostructures as multicolor, high-efficiency light-emitting diodes.

PubMed

Qian, Fang; Gradecak, Silvija; Li, Yat; Wen, Cheng-Yen; Lieber, Charles M

2005-11-01

We report the growth and characterization of core/multishell nanowire radial heterostructures, and their implementation as efficient and synthetically tunable multicolor nanophotonic sources. Core/multishell nanowires were prepared by metal-organic chemical vapor deposition with an n-GaN core and InxGa1-xN/GaN/p-AlGaN/p-GaN shells, where variation of indium mole fraction is used to tune emission wavelength. Cross-sectional transmission electron microscopy studies reveal that the core/multishell nanowires are dislocation-free single crystals with a triangular morphology. Energy-dispersive X-ray spectroscopy clearly shows shells with distinct chemical compositions, and quantitatively confirms that the thickness and composition of individual shells can be well controlled during synthesis. Electrical measurements show that the p-AlGaN/p-GaN shell structure yields reproducible hole conduction, and electroluminescence measurements demonstrate that in forward bias the core/multishell nanowires function as light-emitting diodes, with tunable emission from 365 to 600 nm and high quantum efficiencies. The ability to synthesize rationally III-nitride core/multishell nanowire heterostructures opens up significant potential for integrated nanoscale photonic systems, including multicolor lasers.

MAPLE prepared heterostructures with oligoazomethine: Fullerene derivative mixed layer for photovoltaic applications

NASA Astrophysics Data System (ADS)

Stanculescu, A.; Rasoga, O.; Socol, M.; Vacareanu, L.; Grigoras, M.; Socol, G.; Stanculescu, F.; Breazu, C.; Matei, E.; Preda, N.; Girtan, M.

2017-09-01

Mixed layers of azomethine oligomers containing 2,5-diamino-3,4-dicyanothiophene as central unit and triphenylamine (LV5) or carbazol (LV4) at both ends as donor and fullerene derivative, [6,6]-phenyl-C61 butyric acid butyl ester ([C60]PCB-C4) as acceptor, have been prepared by Matrix Assisted Pulsed Laser Evaporation (MAPLE) on glass/ITO and Si substrates. The effect of weight ratio between donor and acceptor (1:1; 1:2) and solvent type (chloroform, dimethylsulphoxide) on the optical (UV-vis transmission/absorption, photoluminescence) and morphological properties of LV4 (LV5): [C60]PCB-C4 mixed layers has been evidenced. Dark and under illumination I-V characteristics of the heterostructures realized with these mixed layers sandwiched between ITO and Al electrodes have revealed a solar cell behavior for the heterostructures prepared with both LV4 and LV5 using chloroform as matrix solvent. The solar cell structure realized with oligomer LV5, glass/ITO/LV5: [C60]PCB-C4 (1:1) has shown the best parameters.

Deep-UV emission at 219 nm from ultrathin MBE GaN/AlN quantum heterostructures

NASA Astrophysics Data System (ADS)

Islam, S. M.; Protasenko, Vladimir; Lee, Kevin; Rouvimov, Sergei; Verma, Jai; Xing, Huili Grace; Jena, Debdeep

2017-08-01

Deep ultraviolet (UV) optical emission below 250 nm (˜5 eV) in semiconductors is traditionally obtained from high aluminum containing AlGaN alloy quantum wells. It is shown here that high-quality epitaxial ultrathin binary GaN quantum disks embedded in an AlN matrix can produce efficient optical emission in the 219-235 nm (˜5.7-5.3 eV) spectral range, far above the bulk bandgap (3.4 eV) of GaN. The quantum confinement energy in these heterostructures is larger than the bandgaps of traditional semiconductors, made possible by the large band offsets. These molecular beam epitaxy-grown extreme quantum-confinement GaN/AlN heterostructures exhibit an internal quantum efficiency of 40% at wavelengths as short as 219 nm. These observations together with the ability to engineer the interband optical matrix elements to control the direction of photon emission in such binary quantum disk active regions offer unique advantages over alloy AlGaN quantum well counterparts for the realization of deep-UV light-emitting diodes and lasers.

II-VI Laser Heterostructures with Different Types of Active Region

DTIC Science & Technology

1999-06-18

Physics and Technology, 1997 p. 210. [11] A. Lebedev, S. Sorokin, A. Toropov et al., Acta Physica Polonica A 94 (2), 421 (1998). [12] A. Toropov, T. V...Toropov, S. V. Ivanov, T. V. Shubina et al., J. Cryst. Growth 184/185, 293 (1998). [16] I. Sedova, T. Shubina, S. Sorokin et al., Acta Physica

A 1.3-μm four-channel directly modulated laser array fabricated by SAG-Upper-SCH technology

NASA Astrophysics Data System (ADS)

Guo, Fei; Lu, Dan; Zhang, Ruikang; Liu, Songtao; Sun, Mengdie; Kan, Qiang; Ji, Chen

2017-01-01

A monolithically integrated four-channel directly modulated laser (DML) array working at the 1.3-μm band is demonstrated. The laser was manufactured by using the techniques of selective area growth (SAG) of the upper separate confinement heterostructure (Upper-SCH) and modified butt-joint method. The fabricated device showed stable single mode operation with the side mode suppression ratio (SMSR) >35 dB, and high wavelength accuracy with the deviations from the linear fitted values <±0.03 nm for all channels. Furthermore, small signal modulation bandwidth >7 GHz was obtained, which may be suitable for 40 GbE applications in the 1.3-μm band.

LASER BIOLOGY AND MEDICINE: Laser analysis of the 13C/12C isotope ratio in CO2 in exhaled air

NASA Astrophysics Data System (ADS)

Stepanov, E. V.

2002-11-01

Tunable diode lasers (TDLs) are applied to the diagnostics of gastroenterological diseases using respiratory tests and preparations enriched with the stable 13C isotope. This method of the analysis of the 13C/12C isotope ratio in CO2 in exhaled air is based on the selective measurement of the resonance absorption at the vibrational — rotational structure of 12CO2 and 13CO2. The CO2 transmission spectra in the region of 4.35 μm were measured with a PbEuSe double-heterostructure TDL. The accuracy of carbon isotope ratio measurements in CO2 of exhaled air performed with the TDL was ~0.5%. The data of clinical tests of the developed laser-based analyser are presented.

High-power operation of highly reliable narrow stripe pseudomorphic single quantum well lasers emitting at 980 nm

NASA Technical Reports Server (NTRS)

Larsson, A.; Forouhar, S.; Cody, J.; Lang, R. J.

1990-01-01

Ridge waveguide pseudomorphic InGaAs/GaAs/AlGaAs single-quantum-well lasers exhibiting record high quantum efficiencies and high output power densities (105 mW per facet from a 6 micron wide stripe) at a lasing wavelength of 980 nm are discussed that were fabricated from a graded index separate confinement heterostructure grown by molecular beam epitaxy. Life testing at an output power of 30 mW per uncoated facet reveals a slow gradual degradation during the initial 500 h of operation after which the operating characteristics of the lasers become stable. The emission wavelength, the high output power, and the fundamental lateral mode operation render these lasers suitable for pumping Er3+-doped fiber amplifiers.

High power and single mode quantum cascade lasers.

PubMed

Bismuto, Alfredo; Bidaux, Yves; Blaser, Stéphane; Terazzi, Romain; Gresch, Tobias; Rochat, Michel; Muller, Antoine; Bonzon, Christopher; Faist, Jerome

2016-05-16

We present a single mode quantum cascade laser with nearly 1 W optical power. A buried distributed feedback reflector is used on the back section for wavelength selection. The laser is 6 mm long, 3.5 μm wide, mounted episide-up and the laser facets are left uncoated. Laser emission is centered at 4.68 μm. Single-mode operation with a side mode suppression ratio of more than 30 dB is obtained in whole range of operation. Farfield measurements prove a symmetric, single transverse-mode emission in TM00-mode with typical divergences of 41° and 33° in the vertical and horizontal direction respectively. This work shows the potential for simple fabrication of high power lasers compatible with standard DFB processing.

Broad-gain (Δλ/λ0

PubMed

Fujita, Kazuue; Furuta, Shinichi; Dougakiuchi, Tatsuo; Sugiyama, Atsushi; Edamura, Tadataka; Yamanishi, Masamichi

2011-01-31

Broad-gain operation of λ~8.7 μm quantum cascade lasers based on dual-upper-state to multiple-lower-state transition design is reported. The devices exhibit surprisingly wide (~500 cm(-1)) electroluminescence spectra which are very insensitive to voltage and temperature changes above room temperature. With recourse to the temperature-insensitivity of electroluminescence spectra, the lasers demonstrate an extremely-weak temperature-dependence of laser performances: T0-value of 510 K, associated with a room temperature threshold current density of 2.6 kA/cm2. In addition, despite such wide gain spectra, room temperature, continuous wave operation of the laser with buried hetero structure is achieved.

Deep ultraviolet photodetectors based on p-Si/ i-SiC/ n-Ga2O3 heterojunction by inserting thin SiC barrier layer

NASA Astrophysics Data System (ADS)

An, Yuehua; Zhi, Yusong; Wu, Zhenping; Cui, Wei; Zhao, Xiaolong; Guo, Daoyou; Li, Peigang; Tang, Weihua

2016-12-01

Deep ultraviolet photodetectors based on p-Si/ n-Ga2O3 and p-Si/ i-SiC/ n-Ga2O3 heterojunctions were fabricated by laser molecular beam epitaxial (L-MBE), respectively. In compare with p-Si/ n-Ga2O3 heterostructure-based photodetector, the dark current of p-Si/ i-SiC/ n-Ga2O3-based photodetector decreased by three orders of magnitude, and the rectifying behavior was tuned from reverse to forward. In order to improve the quality of the photodetector, we reduced the oxygen vacancies of p-Si/ i-SiC/ n-Ga2O3 heterostructures by changing the oxygen pressure during annealing. As a result, the rectification ratio ( I F/ I R) of the fabricated photodetectors was 36 at 4.5 V and the photosensitivity was 5.4 × 105% under the 254 nm light illumination at -4.5 V. The energy band structure of p-Si/ n-Ga2O3 and p-Si/ i-SiC/ n-Ga2O3 heterostructures was schematic drawn to explain the physic mechanism of enhancement of the performance of p-Si/ i-SiC/ n-Ga2O3 heterostructure-based deep UV photodetector by introduction of SiC layer.

Fabrication and properties of nanoscale multiferroic heterostructures for application in magneto-electric random access memory (MERAM) devices

NASA Astrophysics Data System (ADS)

Kim, Gunwoo

Magnetoelectric random access memory (MERAM) has emerged as a promising new class of non-volatile solid-state memory device. It offers nondestructive reading along with low power consumption during the write operation. A common implementation of MERAM involves use of multiferroic tunneling junctions (MFTJs), which besides offering non-volatility are both electrically and magnetically tunable. Fundamentally, a MFTJ consists of a heterostructure of an ultrathin multiferroic or ferroelectric material as the active tunneling barrier sandwiched between ferromagnetic electrodes. Thereby, the MFTJ exhibits both tunnel electroresistance (TER) and tunnel magnetoresistance (TMR) effects with application of an electric and magnetic field, respectively. In this thesis work, we have developed two-dimensional (2D) thin-film multiferroic heterostructure METJ prototypes consisting of ultrathin ferroelectric BaTiO3 (BTO) layer and a conducting ferromagnetic La0.67Sr 0.33MnO3 (LSMO) electrode. The heteroepitaxial films are grown using the pulsed laser deposition (PLD) technique. This oxide heterostructure offers the opportunity to study the nano-scale details of the tunnel electroresistance (TER) effect using scanning probe microscopy techniques. We performed the measurements using the MFP-3D (Asylum Research) scanning probe microscope. The ultrathin BTO films (1.2-2.0 nm) grown on LSMO electrodes display both ferro- and piezo-electric properties and exhibit large tunnel resistance effect. We have explored the growth and properties of one-dimensional (1D) heterostructures, referred to as multiferoric nanowire (NW) heterostructures. The ferromagnetic/ferroelectric composite heterostructures are grown as sheath layers using PLD on lattice-matched template NWs, e.g. MgO, that are deposited by chemical vapor deposition utilizing the vapor-liquid-solid (VLS) mechanism. The one-dimensional geometry can substantially overcome the clamping effect of the substrate present in two-dimensional structures because of the reduced volume of the template. This leads to minimum constraint of displacements at the interface and thereby significantly enhances the magnetoelectric (ME) effect. We characterized the nanostructures using scanning electron microscopy (SEM) and transmission electron microscopy (TEM). The results of our studies utilizing multiferroic 2-D thin films and 1-D NW architectures clearly demonstrate the potential of these heterostructures for future device applications, such as in MERAM, data storage, magneto-electric field sensors, etc.

Enhanced Self-Biased Magnetoelectric Coupling in Laser-Annealed Pb(Zr,Ti)O3 Thick Film Deposited on Ni Foil.

PubMed

Palneedi, Haribabu; Maurya, Deepam; Geng, Liwei D; Song, Hyun-Cheol; Hwang, Geon-Tae; Peddigari, Mahesh; Annapureddy, Venkateswarlu; Song, Kyung; Oh, Yoon Seok; Yang, Su-Chul; Wang, Yu U; Priya, Shashank; Ryu, Jungho

2018-04-04

Enhanced and self-biased magnetoelectric (ME) coupling is demonstrated in a laminate heterostructure comprising 4 μm-thick Pb(Zr,Ti)O 3 (PZT) film deposited on 50 μm-thick flexible nickel (Ni) foil. A unique fabrication approach, combining room temperature deposition of PZT film by granule spray in vacuum (GSV) process and localized thermal treatment of the film by laser radiation, is utilized. This approach addresses the challenges in integrating ceramic films on metal substrates, which is often limited by the interfacial chemical reactions occurring at high processing temperatures. Laser-induced crystallinity improvement in the PZT thick film led to enhanced dielectric, ferroelectric, and magnetoelectric properties of the PZT/Ni composite. A high self-biased ME response on the order of 3.15 V/cm·Oe was obtained from the laser-annealed PZT/Ni film heterostructure. This value corresponds to a ∼2000% increment from the ME response (0.16 V/cm·Oe) measured from the as-deposited PZT/Ni sample. This result is also one of the highest reported values among similar ME composite systems. The tunability of self-biased ME coupling in PZT/Ni composite has been found to be related to the demagnetization field in Ni, strain mismatch between PZT and Ni, and flexural moment of the laminate structure. The phase-field model provides quantitative insight into these factors and illustrates their contributions toward the observed self-biased ME response. The results present a viable pathway toward designing and integrating ME components for a new generation of miniaturized tunable electronic devices.

Martian Buried Basins and Implications for Characteristics of the Burial Layer and Underlying Surface

NASA Technical Reports Server (NTRS)

Sarid, A. R.; Frey, H. V.; Roark, J. H.

2003-01-01

Deciphering the cratering record on Mars has been challenging because it may reflect the changes in both the population of impactors and in the resurfacing processes on Mars. However, it is possible to determine the breadth of impactors captured in the cratering record. Extensive areas of resurfacing are of particular interest because they likely contain material from various ages in Martian history. By deducing the impact populations in both surface and underlying layers of terrain, it is possible to determine the age of the layers and constrain theories on the development of the Martian surface. However, to do so requires a method of seeing impact features which are no longer visible. Topographic data of Mars, taken by the Mars Orbiter Laser Altimeter (MOLA), has revealed impact features buried by resurfacing processes. These features are often indistinguishable on Viking images of the Martian surface. In this study, gridded MOLA data was analyzed in order to locate buried impact features, also called buried basins, in Syria, Solis, and Sinai Planum just south of Valles Marineris. The population statistics of buried features can be compared to those of visible features in order to determine the age of the underlying material and characteristics of the surface cover. Specifically, if the buried population in the Hesperian terrain is similar to the population of visible features in the Noachian, it would suggest that the underlying terrain is Noachian in age. The buried craters can then be compared to visible Noachian craters to reveal the amount of deterioration of the buried features. These comparisons allow us to explore the morphology of the terrain in the Hesperian region to determine if topographic variations are due to differences in the thickness of the overlying material or are a characteristic of the underlying terrain.

Conducting LaAlO3/SrTiO3 heterointerfaces on atomically-flat substrates prepared by deionized-water

PubMed Central

Connell, J. G.; Nichols, J.; Gruenewald, J. H.; Kim, D.-W.; Seo, S. S. A.

2016-01-01

We have investigated how the recently-developed water-leaching method for atomically-flat SrTiO3 (STO) substrates affects the transport properties of LaAlO3 (LAO) and STO heterointerfaces. Using pulsed laser deposition at identical growth conditions, we have synthesized epitaxial LAO thin-films on two different STO substrates, which are prepared by water-leaching and buffered hydrofluoric acid (BHF) etching methods. The structural, transport, and optical properties of LAO/STO heterostructures grown on water-leached substrates show the same high-quality as the samples grown on BHF-etched substrates. These results indicate that the water-leaching method can be used to grow complex oxide heterostructures with atomically well-defined heterointerfaces without safety concerns. PMID:27033248

Three-dimensional self-organization of crystalline gold nanoparticles in amorphous alumina

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jin Chunming; Zhou Honghui; Wei Wei

Multilayered heterostructures containing gold nanoparticles embedded in amorphous alumina matrices were deposited on silicon (001) substrates using pulsed laser deposition. The three-dimensional ordering of gold nanoparticles within these multilayered heterostructures was investigated using cross-sectional transmission electron microscopy and image Fourier transformation. Self-organization of gold nanoparticles along the vertical direction was observed in films grown at 20 and at 320 deg. C. Self-organization occurred by means of two different growth modes; both vertically correlated growth (top-on-top) and anticorrelated growth (top-on-middle) mechanisms were observed. The results of these studies suggest that the driving force for vertical ordering in this material is relatedmore » to the long-range elastic interactions among the nanoparticles within the growing films.« less

Ferroelectric enhancement in heterostructured ZnO /BiFeO3-PbTiO3 film

NASA Astrophysics Data System (ADS)

Yu, Shengwen; Chen, Rui; Zhang, Guanjun; Cheng, Jinrong; Meng, Zhongyan

2006-11-01

The authors have prepared heterostructured ZnO /BiFeO3-PbTiO3 (BFO-PT) composite film and BFO-PT film on Pt /Ti/SiO2/Si substrates by pulsed-laser deposition. The structure and morphologies of the films were characterized by x-ray diffraction (XRD) and scanning electron microscope. XRD results show that both films are perovskite structured last with different orientations. The leakage current density in the ZnO /BFO-PT film was found to be nearly two orders of magnitude lower. This could be due to the introduced ZnO layer behaving as a Schottky barrier between the BFO-PT film and top electrodes. The dramatic ferroelectric enhancement in ZnO /BFO-PT film is mostly ascribed to the improved insulation.

Growth and interface engineering in thin-film Ba0.6Sr0.4TiO3 /SrMoO3 heterostructures

NASA Astrophysics Data System (ADS)

Radetinac, Aldin; Ziegler, Jürgen; Vafaee, Mehran; Alff, Lambert; Komissinskiy, Philipp

2017-04-01

Epitaxial heterostructures of ferroelectric Ba0.6Sr0.4TiO3 and highly conducting SrMoO3 were grown by pulsed laser deposition on SrTiO3 (0 0 1) substrates. Surface oxidation of the SrMoO3 film is suppressed using a thin cap interlayer of Ba0.6Sr0.4TiO3-δ grown in reduced atmosphere. As shown by X-ray photoelectron spectroscopy, the Mo4+ valence state of the SrMoO3 films is stable upon annealing of the sample in oxygen up to 600 °C. The described oxygen interface engineering enables utilization of the highly conducting material SrMoO3 in multilayer oxide ferroelectric varactors.

Long wavelength PbSnTe lasers with CW operation above 77 K

NASA Technical Reports Server (NTRS)

Shinohara, K.; Yoshikawa, M.; Ito, M.; Ueda, R.

1980-01-01

Lead tin telluride diode lasers with emission wavelengths of 6 to 9 micrometers easily operate continuously at temperatures above 77K. These lasers have the Pb(1-y) Sn(y) TE/Pb(1-y) Te/Pb(1-y) Sn(y) Te/PbTe (substrate), (x y) double heterostructure. To prepare this structure by LPE, the growth temperature must be below 600 C to suppress diffusion of the tin during the epitaxial growth. When the heterojunctions are formed by the usual LPE method, the junction boundaries become irregular in the case for the lasers with wavelengths of over 10 micrometers at 77K. The mechanism by which the heterojunction boundaries become irregular is cleared and a new LPE method which prevents the irregularity is explained. The lasers prepared from the wafers grown by the new method have demonstrated CW operation at wavelengths longer than 10 micrometers above liquid nitrogen temperature.

Room-temperature operation of quantum cascade lasers at a wavelength of 5.8 μm

DOE Office of Scientific and Technical Information (OSTI.GOV)

Babichev, A. V.; Bousseksou, A.; Pikhtin, N. A.

2016-10-15

The room-temperature generation of multiperiod quantum-cascade lasers (QCL) at a wavelength of 5.8 μm in the pulsed mode is demonstrated. The heterostructure of a quantum-cascade laser based on a heterojunction of InGaAs/InAlAs alloys is grown by molecular-beam epitaxy and incorporates 60 identical cascades. The threshold current density of the stripe laser 1.4 mm long and 22 μm wide is ~4.8 kA/cm{sup 2} at a temperature of 303 K. The maximum power of the optical-radiation output from one QCL face, recorded by a detector, is 88 mW. The actual optical-power output from one QCL face is no less than 150 mW.more » The results obtained and possible ways of optimizing the structure of the developed quantum-cascade lasers are discussed.« less

FIBER AND INTEGRATED OPTICS: Directional pattern and other output properties of a quantum-well injection laser for the 780-nm spectral region

NASA Astrophysics Data System (ADS)

Davydova, Evgeniya I.; Drakin, A. E.; Eliseev, P. G.; Pak, G. T.; Popovichev, V. V.; Uspenskiĭ, M. B.; Khlopotin, S. E.; Shishkin, Viktor A.

1992-10-01

An optical model is constructed for a GaAlAs/GaAs stripe-geometry laser heterostructure with a ridge-waveguide configuration in the p-type emitter layer. This waveguide configuration provides lateral optical confinement. The directional characteristics of the output are found as a function of the parameters of the structure. The quantum-well active layer is in a three-layer waveguide (in a separate-confinement structure). Laser structures were fabricated experimentally by MOCVD epitaxy followed by ion-chemical etching and vacuum deposition of zinc selenide on the mesa stripes. Low-threshold lasers with a cw, single-frequency power up to 40 μW were obtained. In single-spatial-mode operation, a power up to 80 μW was achieved at a wavelength of 780 nm. Windows of ZnSe were grown on the laser facets to improve the optical strength.

Photovoltaic effect of ferroelectric Pb(Zr0.52,Ti0.48)O3 deposited on SrTiO3 buffered n-GaAs by laser molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Zhou, Yunxia; Zhu, Jun; Liu, Xingpeng; Wu, Zhipeng

Ferroelectric Pb(Zr0.52,Ti0.48)O3(PZT) thin film was grown on n-type GaAs (001) substrate with SrTiO3 (STO) buffer layer by laser molecular beam epitaxy (L-MBE). The epitaxial process of the STO was in situ monitored by reflection high-energy electron diffraction (RHEED). The crystallographical growth orientation relationship was revealed to be (002) 〈100〉 PZT//(002) 〈100〉 STO//(001) 〈110〉 GaAs by RHEED and X-ray diffraction (XRD). It was found that a small lattice mismatch between PZT and GaAs with a 45∘ in-plane rotation relationship can be formed by inserting of a buffer layer STO. Besides, the enhanced electrical properties of the heterostructure were obtained with the short-circuit photocurrent increased to 52mA/cm2 and the better power conversation efficiency increased by 20% under AM1.5G (100mW/cm2) illumination. The work could provide a way for the application of this kind of heterostructure with high photocurrent response in optoelectronic thin film devices.

INTERNATIONAL CONFERENCE ON SEMICONDUCTOR INJECTION LASERS SELCO-87: Ohmic resistance of metal contacts with GaInAsP/InP double heterostructures as a function of the composition of the capping layer

NASA Astrophysics Data System (ADS)

Vogel, K.; Maly, D.; Puchert, R.; Schade, U.

1988-11-01

Characteristics of low-resistance Au-Cr-Au contacts with a quaternary solid solution, isoperiodic with GaInAsP, were determined as a function of the composition. These contacts were used in injection lasers emitting in the range of 1.3 μm. The smallest specific resistance (2 × 10- 5 Ω · cm2) was obtained for a contact with a GaInAs layer characterized by a hole density of ~ 1019 cm- 3.

Semiconductor light sources for near- and mid-infrared spectral ranges

NASA Astrophysics Data System (ADS)

Karachinsky, L. Ya; Babichev, A. V.; Gladyshev, A. G.; Denisov, D. V.; Filimonov, A. V.; Novikov, I. I.; Egorov, A. Yu

2017-11-01

1550 nm band wafer-fused vertical-cavity surface-emitting lasers (VCSELs) and 5-10 μm band multi-stages quantum-cascade lasers (QCL) grown by molecular beam epitaxy (MBE) were fabricated and studied. VCSELs show high output optical power up to 6 mW in single-mode regime (SMSR > 40 dB) and open-eye diagrams at 30 Gbps of standard NRZ at 20°C. QCL heterostructures show high structural quality (fluctuations of composition and thickness < 1%). 20-μm-stripe width QCLs mounted on copper heatsinks show lasing at ∼ 6, 7.5 and 9 μm.

Pulsed laser deposition—invention or discovery?

NASA Astrophysics Data System (ADS)

Venkatesan, T.

2014-01-01

The evolution of pulsed laser deposition had been an exciting process of invention and discovery, with the development of high Tc superconducting films as the main driver. It has become the method of choice in research and development for rapid prototyping of multicomponent inorganic materials for preparing a variety of thin films, heterostructures and atomically sharp interfaces, and has become an indispensable tool for advancing oxide electronics. In this paper I will give a personal account of the invention and development of this process at Bellcore/Rutgers, the opportunity, challenges and mostly the extraordinary excitement that was generated, typical of any disruptive technology.

Development of a Buried Layer Platform at the OMEGA Laser to Study Open L-Shell Spectra from Coronal (non-LTE) Plasmas

NASA Astrophysics Data System (ADS)

Marley, Edward; Jarrot, Charlie; Schneider, Marilyn; Kemp, Elijah; Foord, Mark; Heeter, Robert; Liedahl, Duane; Widmann, Klause; Mauche, Christopher; Brown, Greg; Emig, James

2017-10-01

A buried layer platform is being developed at the OMEGA laser to study the open L-shell spectra of coronal (non LTE) plasmas (ne few 1021/cm3, Te 0.8-1.2 keV) of mid Z materials. Studies have been done using a 250 μm diameter dot composed of a layer of 1200 Å thick Zn between two 600 Å thick layers of Ti, in the center of a 1000 μm diameter, 13 μm thick beryllium tamper. Lasers heat the target from both sides for up to 3 ns. The size of the microdot vs time was measured with x-ray imaging (face-on and side-on). The radiant x-ray power was measured with a low-resolution absolutely calibrated x-ray spectrometer (DANTE). The temperature was measured from the Ti helium-beta complex. The use of this platform for the verification of atomic models is discussed. This work was performed under the auspices of the U.S. Department of Energy by Lawrence Livermore National Laboratory under Contract DE-AC52-07NA27344.

Optical properties of a multibarrier structure under intense laser fields

NASA Astrophysics Data System (ADS)

Ospina, D. A.; Akimov, V.; Mora-Ramos, M. E.; Morales, A. L.; Tulupenko, V.; Duque, C. A.

2015-11-01

Using the diagonalization method and within the effective mass and parabolic band approximations, the energy spectrum and the wave functions are investigated in biased multibarrier structure taking into account the effects of nonresonant intense laser fields. We calculated the optical properties from the susceptibility using a nonperturbative formalism recently reported. We study the changes in the intersubband optical absorption coefficients and refraction index for several values of the dressing laser parameter and for some specific values of the electric field applied along the growth direction of the heterostructure. It is concluded from our study that the peaks in the optical absorption spectrum have redshifts or blueshifts as a function of the laser parameter and the electric field. These parameters could be suitable tools for tuning the electronic and optical properties of the multibarrier structure.

Probing scattering mechanisms with symmetric quantum cascade lasers.

PubMed

Deutsch, Christoph; Detz, Hermann; Zederbauer, Tobias; Andrews, Aaron M; Klang, Pavel; Kubis, Tillmann; Klimeck, Gerhard; Schuster, Manfred E; Schrenk, Werner; Strasser, Gottfried; Unterrainer, Karl

2013-03-25

A characteristic feature of quantum cascade lasers is their unipolar carrier transport. We exploit this feature and realize nominally symmetric active regions for terahertz quantum cascade lasers, which should yield equal performance with either bias polarity. However, symmetric devices exhibit a strongly bias polarity dependent performance due to growth direction asymmetries, making them an ideal tool to study the related scattering mechanisms. In the case of an InGaAs/GaAsSb heterostructure, the pronounced interface asymmetry leads to a significantly better performance with negative bias polarity and can even lead to unidirectionally working devices, although the nominal band structure is symmetric. The results are a direct experimental proof that interface roughness scattering has a major impact on transport/lasing performance.

INTERNATIONAL CONFERENCE ON SEMICONDUCTOR INJECTION LASERS SELCO-87: Metal-organic vapor phase epitaxy of (GaAl)As for 0.85-μm laser diodes

NASA Astrophysics Data System (ADS)

Jacobs, K.; Bugge, F.; Butzke, G.; Lehmann, L.; Schimko, R.

1988-11-01

Metal-organic vapor phase epitaxy was used to grow stripe heterolaser diodes that were hitherto fabricated by liquid phase epitaxy. The main relationships between the growth parameters (partial input pressures, temperatures) and the properties of materials (thicknesses, solid-solution compositions, carrier densities) were investigated. The results were in full agreement with the mechanism of growth controlled by a vapor-phase diffusion. The results achieved routinely in the growth of GaAs are reported. It is shown that double heterostructure laser diodes fabricated by metal-organic vapor phase epitaxy compete favorably with those grown so far by liquid phase epitaxy, including their degradation and reliability.

Highly efficient pseudomorphic InGaAs/GaAs/AlGaAs single quantum well lasers for monolithic integration

NASA Technical Reports Server (NTRS)

Larsson, A.; Cody, J.; Forouhar, S.; Lang, R. J.

1990-01-01

Highly efficient ridge waveguide pseudomorphic single quantum well lasers, emitting at 980 nm, have been fabricated from an In(0.2)Ga(0.8)As/GaAs/AlGaAs graded-index separate confinement heterostructure grown by molecular beam epitaxy. The laterial index guiding provided by the ridge reduces the anomalously large lateral loss of optical power found in gain-guided structures, thereby reducing the internal loss by more than 50 percent. The low threshold current (7.6 mA) and high differential quantum efficiency (79 percent) obtained under continuous operation as well as the transparency of the GaAs substrate to the emitted radiation render these lasers attractive for Ga-As-based optoelectronic integration.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Slipchenko, S. O., E-mail: serghpl@mail.ioffe.ru; Podoskin, A. A.; Pikhtin, N. A.

Threshold conditions for generation of a closed mode in the crystal of the Fabry-Perot semiconductor laser with a quantum-well active region are analyzed. It is found that main parameters affecting the closed mode lasing threshold for the chosen laser heterostructure are as follows: the optical loss in the passive region, the optical confinement factor of the closed mode in the gain region, and material gain detuning. The relations defining the threshold conditions for closed mode lasing in terms of optical and geometrical characteristics of the semiconductor laser are derived. It is shown that the threshold conditions can be satisfied atmore » a lower material gain in comparison with the Fabry-Perot cavity mode due to zero output loss for the closed mode.« less

Terahertz Quantum Cascade Laser With Efficient Coupling and Beam Profile

NASA Technical Reports Server (NTRS)

Chattopadhyay, Goutam; Kawamura, Jonathan H.; Lin, Robert H.; Williams, Benjamin

2012-01-01

Quantum cascade lasers (QCLs) are unipolar semiconductor lasers, where the wavelength of emitted radiation is determined by the engineering of quantum states within the conduction band in coupled multiple-quantum-well heterostructures to have the desired energy separation. The recent development of terahertz QCLs has provided a new generation of solid-state sources for radiation in the terahertz frequency range. Terahertz QCLs have been demonstrated from 0.84 to 5.0 THz both in pulsed mode and continuous wave mode (CW mode). The approach employs a resonant-phonon depopulation concept. The metal-metal (MM) waveguide fabrication is performed using Cu-Cu thermo-compression bonding to bond the GaAs/AlGaAs epitaxial layer to a GaAs receptor wafer.

Terahertz lasers and amplifiers based on resonant optical phonon scattering to achieve population inversion

NASA Technical Reports Server (NTRS)

Hu, Qing (Inventor); Williams, Benjamin S. (Inventor)

2007-01-01

The present invention provides quantum cascade lasers and amplifier that operate in a frequency range of about 1 Terahertz to about 10 Terahertz. In one aspect, a quantum cascade laser of the invention includes a semiconductor heterostructure that provides a plurality of lasing modules connected in series. Each lasing module includes a plurality of quantum well structure that collectively generate at least an upper lasing state, a lower lasing state, and a relaxation state such that the upper and the lower lasing states are separated by an energy corresponding to an optical frequency in a range of about 1 to about 10 Terahertz. The lower lasing state is selectively depopulated via resonant LO-phonon scattering of electrons into the relaxation state.

Terahertz lasers and amplifiers based on resonant optical phonon scattering to achieve population inversion

NASA Technical Reports Server (NTRS)

Williams, Benjamin S. (Inventor); Hu, Qing (Inventor)

2009-01-01

The present invention provides quantum cascade lasers and amplifier that operate in a frequency range of about 1 Terahertz to about 10 Terahertz. In one aspect, a quantum cascade laser of the invention includes a semiconductor heterostructure that provides a plurality of lasing modules connected in series. Each lasing module includes a plurality of quantum well structure that collectively generate at least an upper lasing state, a lower lasing state, and a relaxation state such that the upper and the lower lasing states are separated by an energy corresponding to an optical frequency in a range of about 1 to about 10 Terahertz. The lower lasing state is selectively depopulated via resonant LO-phonon scattering of electrons into the relaxation state.

Effect of laser cavity parameters on saturation of light – current characteristics of high-power pulsed lasers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Veselov, D A; Pikhtin, N A; Lyutetskiy, A V

2015-07-31

We report an experimental study of power characteristics of semiconductor lasers based on MOVPE-grown asymmetric separate-confinement heterostructures with a broadened waveguide as functions of cavity length, stripe contact width and mirror reflectivities. It is shown that at high current pump levels, the variation of the cavity parameters of a semiconductor laser (width, length and mirror reflectivities) influences the light – current (L – I) characteristic saturation and maximum optical power by affecting such laser characteristics, as the current density and the optical output loss. A model is elaborated and an optical power of semiconductor lasers is calculated by taking intomore » account the dependence of the internal optical loss on pump current density and concentration distribution of charge carriers and photons along the cavity axis of the cavity. It is found that only introduction of the dependence of the internal optical loss on pump current density to the calculation model provides a good agreement between experimental and calculated L – I characteristics for all scenarios of variations in the laser cavity parameters. (lasers)« less

Tuning the physical properties in strontium iridate heterostructures

NASA Astrophysics Data System (ADS)

Nichols, John; Meyer, Tricia; Lee, Ho Nyung

2015-03-01

Strontium iridate (Srn+1IrnO3n+1) has received lots of attention recently for its potential to reveal novel physical phenomena due to strong spin-orbital coupling with an interaction energy comparable to that of the on-site Coulomb interaction and crystal field splitting. The coexistence of fundamental interactions has created an exotic Jeff = 1/2 antiferromagnetic insulating ground state in Sr2IrO4. In particular, it is known that this system can be driven into a metallic state with the simultaneous increase in dimensionality (n) and strain. We have investigated the effects of electron confinement by interfacing strontium iridates with other perovskite oxides. We have synthesized thin film heterostructures, SrIrO3/AMO3 (A = Sr, La; B = Ti, Mn, Rh), layer-by-layer with pulsed laser deposition equipped with reflection high-energy electron diffraction. Based on investigations with x-ray diffraction, dc transport, SQUID magnetometry, and various spectroscopic measurements, we will present that the physical properties of the heterostructures are strongly dependent on spatial confinement and epitaxial strain. *This work was supported by the U. S. Department of Energy, Office of Science, Basic Energy Sciences, Materials Science and Engineering Division.

Enhanced direct-gap light emission from Si-capped n+-Ge epitaxial layers on Si after post-growth rapid cyclic annealing: impact of non-radiative interface recombination toward Ge/Si double heterostructure lasers.

PubMed

Higashitarumizu, Naoki; Ishikawa, Yasuhiko

2017-09-04

Enhanced direct-gap light emission is reported for Si-capped n + -Ge layers on Si after post-growth rapid cyclic annealing (RCA), and impact of non-radiative recombination (NRR) at the Ge/Si interface is discussed toward Ge/Si double heterostructure (DH) lasers. P-doped n + -Ge layer (1 × 10 19 cm -3 , 400 nm) is grown on Si by ultra-high vacuum chemical vapor deposition, followed by a growth of Si capping layer (5 nm) to form a Si/Ge/Si DH structure. Post-growth RCA to eliminate defects in Ge is performed in N 2 at temperatures between 900°C and 780°C, where the annealing time is minimized to be 5 s in each RCA cycle to prevent an out-diffusion of P dopants from the Ge surface. Direct-gap photoluminescence (PL) intensity at 1.6 µm increases with the RCA cycles up to 40, although the threading dislocation density in Ge is not reduced after 3 cycles in the present condition. The PL enhancement is ascribed to the suppression of NRR at the Ge/Si interface, where an intermixed SiGe alloy is formed. For Ge/Si DH lasers, NRR at the Ge/Si interface is found to have a significant impact on the threshold current density Jth. In order to achieve Jth on the order of 1 kA/cm 2 , similar to III-V lasers, the interface recombination velocity S is required below 10 3 cm/s in spite of S as large as 10 5 cm/s at the ordinary defect-rich Ge/Si interface.

Hyperbranched TiO2-CdS nano-heterostructures for highly efficient photoelectrochemical photoanodes.

PubMed

Mezzetti, Alessandro; Balandeh, Mehrdad; Luo, Jingshan; Bellani, Sebastiano; Tacca, Alessandra; Divitini, Giorgio; Cheng, Chuanwei; Ducati, Caterina; Meda, Laura; Fan, Hongjin; Di Fonzo, Fabio

2018-08-17

Quasi-1D-hyperbranched TiO 2 nanostructures are grown via pulsed laser deposition and sensitized with thin layers of CdS to act as a highly efficient photoelectrochemical photoanode. The device properties are systematically investigated by optimizing the height of TiO 2 scaffold structure and thickness of the CdS sensitizing layer, achieving photocurrent values up to 6.6 mA cm -2 and reaching saturation with applied biases as low as 0.35 V RHE . The high internal conversion efficiency of these devices is to be found in the efficient charge generation and injection of the thin CdS photoactive film and in the enhanced charge transport properties of the hyperbranched TiO 2 scaffold. Hence, the proposed device represents a promising architecture for heterostructures capable of achieving high solar-to-hydrogen efficiency.

Development of 1300 nm GaAs-Based Microcavity Light-Emitting Diodes

DTIC Science & Technology

2001-06-01

vertical - cavity surface emitting lasers ( VCSEL ) and micro- cavity light- emitting diodes (MC-LED) for short-to-medium... epitaxial growth run [1 ]. Self-organized In(Ga)As quantum dot (QD) heterostructures grown by molecular beam epitaxy ( MBE ) are promising candidates as...successfully grown by molecular beam epitaxy on GaAs substrates without the need to rely on any in-situ calibration technique. Fabricated

Direct conversion of h-BN into c-BN and formation of epitaxial c-BN/diamond heterostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Narayan, Jagdish, E-mail: narayan@ncsu.edu; Bhaumik, Anagh; Xu, Weizong

2016-05-14

We have created a new state of BN (named Q-BN) through rapid melting and super undercooling and quenching by using nanosecond laser pulses. Phase pure c-BN is formed either by direct quenching of super undercooled liquid or by nucleation and growth from Q-BN. Thus, a direct conversion of hexagonal boron nitride (h-BN) into phase-pure cubic boron nitride (c-BN) is achieved by nanosecond pulsed laser melting at ambient temperatures and atmospheric pressure in air. According to the P-T phase diagram, the transformation from h-BN into c-BN under equilibrium processing can occur only at high temperatures and pressures, as the hBN-cBN-Liquid triplemore » point is at 3500 K/9.5 GPa or 3700 K/7.0 GPa with a recent theoretical refinement. Using nonequilibrium nanosecond laser melting, we have created super undercooled state and shifted this triple point to as low as 2800 K and atmospheric pressure. The rapid quenching from super undercooled state leads to the formation of a new phase, named as Q-BN. We present detailed characterization of Q-BN and c-BN layers by using Raman spectroscopy, high-resolution scanning electron microscopy, electron-back-scatter diffraction, high-resolution TEM, and electron energy loss spectroscopy, and discuss the mechanism of formation of nanodots, nanoneedles, microneedles, and single-crystal c-BN on sapphire substrate. We have also deposited diamond by pulsed laser deposition of carbon on c-BN and created c-BN/diamond heterostructures, where c-BN acts as a template for epitaxial diamond growth. We discuss the mechanism of epitaxial c-BN and diamond growth on lattice matching c-BN template under pulsed laser evaporation of amorphous carbon, and the impact of this discovery on a variety of applications.« less

Confocal Raman imaging of optical waveguides in LiNbO3 fabricated by ultrafast high-repetition rate laser-writing.

PubMed

Ródenas, Airán; Nejadmalayeri, Amir H; Jaque, Daniel; Herman, Peter

2008-09-01

We report on the confocal Raman characterization of the micro-structural lattice changes induced during the high-repetition rate ultrafast laser writing of buried optical waveguides in lithium niobate (LiNbO(3)) crystals. While the laser beam focal volume is characterized by a significant lattice expansion together with a high defect concentration, the adjacent waveguide zone is largely free of defects, undergoing only slight rearrangement of the oxygen octahedron in the LiNbO(3) lattice. The close proximity of these two zones has been found responsible for the propagation losses of the guided light. Subjacent laser-induced periodic micro-structures have been also observed inside the laser focal volume, and identified with a strong periodic distribution of lattice defects.

Four-junction AlGaAs/GaAs laser power converter

NASA Astrophysics Data System (ADS)

Huang, Jie; Sun, Yurun; Zhao, Yongming; Yu, Shuzhen; Dong, Jianrong; Xue, Jiping; Xue, Chi; Wang, Jin; Lu, Yunqing; Ding, Yanwen

2018-04-01

Four-junction AlGaAs/GaAs laser power converters (LPCs) with n+-GaAs/p+-Al0.37Ga0.63As heterostructure tunnel junctions (TJs) have been designed and grown by metal-organic chemical vapor deposition (MOCVD) for converting the power of 808 nm lasers. A maximum conversion efficiency η c of 56.9% ± 4% is obtained for cells with an aperture of 3.14 mm2 at an input laser power of 0.2 W, while dropping to 43.3% at 1.5 W. Measured current–voltage (I–V) characteristics indicate that the performance of the LPC can be further improved by increasing the tunneling current density of TJs and optimizing the thicknesses of sub-cells to achieve current matching in LPC. Project financially supported by the National Natural Science Foundation of China (No. 61376065) and Zhongtian Technology Group Co. Ltd.

Diamagnetic to ferromagnetic switching in VO2 epitaxial thin films by nanosecond excimer laser treatment

NASA Astrophysics Data System (ADS)

Molaei, R.; Bayati, R.; Nori, S.; Kumar, D.; Prater, J. T.; Narayan, J.

2013-12-01

VO2(010)/NiO(111) epitaxial heterostructures were integrated with Si(100) substrates using a cubic yttria-stabilized zirconia (c-YSZ) buffer. The epitaxial alignment across the interfaces was determined to be VO2(010)‖NiO(111)‖c-YSZ(001)‖Si(001) and VO2[100]‖NiO⟨110⟩‖c-YSZ⟨100⟩‖Si⟨100⟩. The samples were subsequently treated by a single shot of a nanosecond KrF excimer laser. Pristine as-deposited film showed diamagnetic behavior, while laser annealed sample exhibited ferromagnetic behavior. The population of majority charge carriers (e-) and electrical conductivity increased by about two orders of magnitude following laser annealing. These observations are attributed to the introduction of oxygen vacancies into the VO2 thin films and the formation of V3+ defects.

Spectral characteristics of multimode semiconductor lasers with a high-order surface diffraction grating

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zolotarev, V V; Leshko, A Yu; Pikhtin, N A

2014-10-31

We have studied the spectral characteristics of multimode semiconductor lasers with high-order surface diffraction gratings based on asymmetric separate-confinement heterostructures grown by metalorganic vapour phase epitaxy (λ = 1070 nm). Experimental data demonstrate that, in the temperature range ±50 °C, the laser emission spectrum is ∼5 Å in width and contains a fine structure of longitudinal and transverse modes. A high-order (m = 15) surface diffraction grating is shown to ensure a temperature stability of the lasing spectrum dλ/dT = 0.9 Å K{sup -1} in this temperature range. From analysis of the fine structure of the lasing spectrum, we havemore » evaluated the mode spacing and, thus, experimentally determined the effective length of the Bragg diffraction grating, which was ∼400 μm in our samples. (lasers)« less

Approaches toward a blue semiconductor laser

NASA Technical Reports Server (NTRS)

Ladany, I.

1989-01-01

Possible approaches for obtaining semiconductor diode laser action in the blue region of the spectrum are surveyed. A discussion of diode lasers is included along with a review of the current status of visible emitters, presently limited to 670 nm. Methods are discussed for shifting laser emission toward shorter wavelengths, including the use of II-IV materials, the increase in the bandgap of III-V materials by addition of nitrogen, and changing the bandstructure from indirect to direct by incorporating interstitial atoms or by constructing superlattices. Non-pn-junction injection methods are surveyed, including avalanche breakdown, Langmuir-Blodgett diodes, heterostructures, carrier accumulation, and Berglund diodes. Prospects of inventing new multinary semiconducting materials are discussed, and a number of novel materials described in the literature are tabulated. New approaches available through the development of quantum wells and superlattices are described, including resonant tunneling and the synthesis of arbitrary bandgap materials through multiple quantum wells.

Laser diodes with 353 nm wavelength enabled by reduced-dislocation-density AlGaN templates

DOE PAGES

Crawford, Mary H.; Allerman, Andrew A.; Armstrong, Andrew M.; ...

2015-10-30

We fabricated optically pumped and electrically injected ultraviolet (UV) lasers on reduced-threading-dislocation-density (reduced-TDD) AlGaN templates. The overgrowth of sub-micron-wide mesas in the Al 0.32Ga 0.68N templates enabled a tenfold reduction in TDD, to (2–3) × 10 8 cm –2. Optical pumping of AlGaN hetero-structures grown on the reduced-TDD templates yielded a low lasing threshold of 34 kW/cm 2 at 346 nm. Room-temperature pulsed operation of laser diodes at 353 nm was demonstrated, with a threshold of 22.5 kA/cm 2. Furthermore, reduced-TDD templates have been developed across the entire range of AlGaN compositions, presenting a promising approach for extending laser diodesmore » into the deep UV.« less

Laser induced THz emission from femtosecond photocurrents in Co/ZnO/Pt and Co/Cu/Pt multilayers

NASA Astrophysics Data System (ADS)

Li, G.; Mikhaylovskiy, R. V.; Grishunin, K. A.; Costa, J. D.; Rasing, Th; Kimel, A. V.

2018-04-01

The ultrashort laser excitation of Co/Pt magnetic heterostructures can effectively generate spin and charge currents at the interfaces between magnetic and nonmagnetic layers. The direction of these photocurrents can be controlled by the helicity of the circularly polarized laser light and an external magnetic field. Here, we employ THz time-domain spectroscopy to investigate further the role of interfaces in these photo-galvanic phenomena. In particular, the effects of either Cu or ZnO interlayers on the photocurrents in Co/X/Pt (X  =  Cu, ZnO) have been studied by varying the thickness of the interlayers up to 5 nm. The results are discussed in terms of spin-diffusion phenomena and interfacial spin-orbit torque.

Scattering of Acoustic Waves from Ocean Boundaries

DTIC Science & Technology

2014-09-30

of buried mines and improve SONAR performance in shallow water. OBJECTIVES 1) Determination of the correct physical model of acoustic propagation...Nicholas Chotiros, particularly for theoretical development of bulk acoustic /sediment modeling and laser roughness measurements. REFERENCES C...PUBLICATIONS 1. M. Isakson, and N. Chotiros. Finite Element Modeling of Acoustic

Ti:Sapphire micro-structures by femtosecond laser inscription: Guiding and luminescence properties

NASA Astrophysics Data System (ADS)

Ren, Yingying; Jiao, Yang; Vázquez de Aldana, Javier R.; Chen, Feng

2016-08-01

We report on the fabrication of buried cladding waveguides with different diameters in a Ti:Sapphire crystal by femtosecond laser inscription. The propagation properties are studied, showing that the cladding waveguides could support near- to mid-infrared waveguiding at both TE and TM polarizations. Confocal micro-photoluminescence experiments reveal that the original fluorescence properties in the waveguide region are very well preserved, while it suffers from a strong quenching at the centers of laser induced filaments. Broadband waveguide fluorescence emissions with high efficiency are realized, indicating the application of the cladding waveguides in Ti:Sapphire as compact broadband luminescence sources in biomedical fields.

Microwave response of an HEMT photoconductor

NASA Technical Reports Server (NTRS)

Claspy, P. C.; Bhasin, K. B.

1988-01-01

Interdigitated photodetectors of various geometries have been fabricated on GaAlAs/GaAs heterostructure material. Optical response characteristics of these devices have been examined at both dc and microwave frequencies. The microwave response, at frequencies to 8 GHz, was studied by illuminating the devices with the output of an internally modulated GaAlAs diode laser. Results of these measurements are presented and compared with that of GaAs photoconductors.

Dynamically tunable interface states in 1D graphene-embedded photonic crystal heterostructure

NASA Astrophysics Data System (ADS)

Huang, Zhao; Li, Shuaifeng; Liu, Xin; Zhao, Degang; Ye, Lei; Zhu, Xuefeng; Zang, Jianfeng

2018-03-01

Optical interface states exhibit promising applications in nonlinear photonics, low-threshold lasing, and surface-wave assisted sensing. However, the further application of interface states in configurable optics is hindered by their limited tunability. Here, we demonstrate a new approach to generate dynamically tunable and angle-resolved interface states using graphene-embedded photonic crystal (GPC) heterostructure device. By combining the GPC structure design with in situ electric doping of graphene, a continuously tunable interface state can be obtained and its tuning range is as wide as the full bandgap. Moreover, the exhibited tunable interface states offer a possibility to study the correspondence between space and time characteristics of light, which is beyond normal incident conditions. Our strategy provides a new way to design configurable devices with tunable optical states for various advanced optical applications such as beam splitter and dynamically tunable laser.

Magneto-optical properties of BaTiO3/La0.76Sr0.24MnO3/BaTiO3 heterostructures

NASA Astrophysics Data System (ADS)

Moog, M.; Singamaneni, S. R.; Prater, J. T.; Biegalski, M. D.; Tsui, F.

2018-05-01

The magnetic properties of epitaxial BaTiO3/La0.76Sr0.24MnO3/BaTiO3 (BTO/LSMO/BTO) heterostructures have been studied using magneto-optic Kerr effect (MOKE) technique. Both longitudinal and polar MOKE were probed as a function of magnetic field and temperature (in the range between 80 and 320 K) for epitaxial films of BTO/LSMO/BTO and LSMO grown on TiO2-terminated SrTiO3 (001) substrates by pulsed laser deposition technique. The LSMO film without the BTO layers exhibits nearly square field-dependent MOKE hysteresis loops with low saturation fields below a bulk-like Curie temperature (TC) of ˜ 350K. In contrast, the film with the BTO layers exhibits a significantly suppressed TC of 155 K, accompanied by significantly enhanced coercive fields and perpendicular magnetic anisotropy.

GaAs1-xBix/GaNyAs1-y type-II quantum wells: novel strain-balanced heterostructures for GaAs-based near- and mid-infrared photonics.

PubMed

Broderick, Christopher A; Jin, Shirong; Marko, Igor P; Hild, Konstanze; Ludewig, Peter; Bushell, Zoe L; Stolz, Wolfgang; Rorison, Judy M; O'Reilly, Eoin P; Volz, Kerstin; Sweeney, Stephen J

2017-04-19

The potential to extend the emission wavelength of photonic devices further into the near- and mid-infrared via pseudomorphic growth on conventional GaAs substrates is appealing for a number of communications and sensing applications. We present a new class of GaAs-based quantum well (QW) heterostructure that exploits the unusual impact of Bi and N on the GaAs band structure to produce type-II QWs having long emission wavelengths with little or no net strain relative to GaAs, while also providing control over important laser loss processes. We theoretically and experimentally demonstrate the potential of GaAs 1-x Bi x /GaN y As 1-y type-II QWs on GaAs and show that this approach offers optical emission and absorption at wavelengths up to ~3 µm utilising strain-balanced structures, a first for GaAs-based QWs. Experimental measurements on a prototype GaAs 0.967 Bi 0.033 /GaN 0.062 As 0.938 structure, grown via metal-organic vapour phase epitaxy, indicate good structural quality and exhibit both photoluminescence and absorption at room temperature. The measured photoluminescence peak wavelength of 1.72 μm is in good agreement with theoretical calculations and is one of the longest emission wavelengths achieved on GaAs to date using a pseudomorphically grown heterostructure. These results demonstrate the significant potential of this new class of III-V heterostructure for long-wavelength applications.

GaAs1-xBix/GaNyAs1-y type-II quantum wells: novel strain-balanced heterostructures for GaAs-based near- and mid-infrared photonics

NASA Astrophysics Data System (ADS)

Broderick, Christopher A.; Jin, Shirong; Marko, Igor P.; Hild, Konstanze; Ludewig, Peter; Bushell, Zoe L.; Stolz, Wolfgang; Rorison, Judy M.; O'Reilly, Eoin P.; Volz, Kerstin; Sweeney, Stephen J.

2017-04-01

The potential to extend the emission wavelength of photonic devices further into the near- and mid-infrared via pseudomorphic growth on conventional GaAs substrates is appealing for a number of communications and sensing applications. We present a new class of GaAs-based quantum well (QW) heterostructure that exploits the unusual impact of Bi and N on the GaAs band structure to produce type-II QWs having long emission wavelengths with little or no net strain relative to GaAs, while also providing control over important laser loss processes. We theoretically and experimentally demonstrate the potential of GaAs1-xBix/GaNyAs1-y type-II QWs on GaAs and show that this approach offers optical emission and absorption at wavelengths up to ~3 µm utilising strain-balanced structures, a first for GaAs-based QWs. Experimental measurements on a prototype GaAs0.967Bi0.033/GaN0.062As0.938 structure, grown via metal-organic vapour phase epitaxy, indicate good structural quality and exhibit both photoluminescence and absorption at room temperature. The measured photoluminescence peak wavelength of 1.72 μm is in good agreement with theoretical calculations and is one of the longest emission wavelengths achieved on GaAs to date using a pseudomorphically grown heterostructure. These results demonstrate the significant potential of this new class of III-V heterostructure for long-wavelength applications.

Excitation intensity dependence of photoluminescence from monolayers of MoS2 and WS2/MoS2 heterostructures

NASA Astrophysics Data System (ADS)

Kaplan, D.; Gong, Y.; Mills, K.; Swaminathan, V.; Ajayan, P. M.; Shirodkar, S.; Kaxiras, E.

2016-03-01

A detailed study of the excitation dependence of the photoluminescence (PL) from monolayers of MoS2 and WS2/MoS2 heterostructures grown by chemical vapor deposition on Si substrates has revealed that the luminescence from band edge excitons from MoS2 monolayers shows a linear dependence on excitation intensity for both above band gap and resonant excitation conditions. In particular, a band separated by ∼55 meV from the A exciton, referred to as the C band, shows the same linear dependence on excitation intensity as the band edge excitons. A band similar to the C band has been previously ascribed to a trion, a charged, three-particle exciton. However, in our study the C band does not show the 3/2 power dependence on excitation intensity as would be expected for a three-particle exciton. Further, the PL from the MoS2 monolayer in a bilayer WS2/MoS2 heterostructure, under resonant excitation conditions where only the MoS2 absorbs the laser energy, also revealed a linear dependence on excitation intensity for the C band, confirming that its origin is not due to a trion but instead a bound exciton, presumably of an unintentional impurity or a native point defect such as a sulfur vacancy. The PL from the WS2/MoS2 heterostructure, under resonant excitation conditions also showed additional features which are suggested to arise from the interface states at the heteroboundary. Further studies are required to clearly identify the origin of these features.

GaAs1−xBix/GaNyAs1−y type-II quantum wells: novel strain-balanced heterostructures for GaAs-based near- and mid-infrared photonics

PubMed Central

Broderick, Christopher A.; Jin, Shirong; Marko, Igor P.; Hild, Konstanze; Ludewig, Peter; Bushell, Zoe L.; Stolz, Wolfgang; Rorison, Judy M.; O’Reilly, Eoin P.; Volz, Kerstin; Sweeney, Stephen J.

2017-01-01

The potential to extend the emission wavelength of photonic devices further into the near- and mid-infrared via pseudomorphic growth on conventional GaAs substrates is appealing for a number of communications and sensing applications. We present a new class of GaAs-based quantum well (QW) heterostructure that exploits the unusual impact of Bi and N on the GaAs band structure to produce type-II QWs having long emission wavelengths with little or no net strain relative to GaAs, while also providing control over important laser loss processes. We theoretically and experimentally demonstrate the potential of GaAs1−xBix/GaNyAs1−y type-II QWs on GaAs and show that this approach offers optical emission and absorption at wavelengths up to ~3 µm utilising strain-balanced structures, a first for GaAs-based QWs. Experimental measurements on a prototype GaAs0.967Bi0.033/GaN0.062As0.938 structure, grown via metal-organic vapour phase epitaxy, indicate good structural quality and exhibit both photoluminescence and absorption at room temperature. The measured photoluminescence peak wavelength of 1.72 μm is in good agreement with theoretical calculations and is one of the longest emission wavelengths achieved on GaAs to date using a pseudomorphically grown heterostructure. These results demonstrate the significant potential of this new class of III-V heterostructure for long-wavelength applications. PMID:28422129

Evaluation of Surface Cleaning of Si(211) for Molecular-Beam Epitaxy Deposition of Infrared Detectors

NASA Astrophysics Data System (ADS)

Jaime-Vasquez, M.; Jacobs, R. N.; Benson, J. D.; Stoltz, A. J.; Almeida, L. A.; Bubulac, L. O.; Chen, Y.; Brill, G.

2010-07-01

We report an assessment of the reproducibility of the HF cleaning process and As passivation prior to the nucleation of ZnTe on the Si(211) surface using temperature desorption spectroscopy, ion scattering spectroscopy, and electron spectroscopy. Observations suggest full H coverage of the Si(211) surface with mostly monohydride and small amounts of dihydride states, and that F is uniformly distributed across the top layer as a physisorbed species. Variations in major contaminants are observed across the Si surface and at the CdTe-ZnTe/Si interface. Defects act as getters for impurities present on the Si surface, and some are buried under the CdTe/ZnTe heterostructure. Overall, the data show evidence of localized concentration of major impurities around defects, supporting the hypothesis of a physical model explaining the electrical activation of defects in long-wave infrared (LWIR) HgCdTe/CdTe/Si devices.

Single-mode laser studies: Design and performance of a fixed-wave length source and coupling of lasers to thin-film optical waveguides

NASA Technical Reports Server (NTRS)

Ladany, I.; Hammer, J. M.

1980-01-01

A module developed for the generation of a stable single wavelength to be used for a fiber optic multiplexing scheme is described. The laser is driven with RZ pulses, and the temperature is stabilized thermoelectrically. The unit is capable of maintaining a fixed wavelength within about 6 A as the pulse duty cycle is changed between 0 and 100 percent. This is considered the most severe case, and much tighter tolerances are obtainable for constant input power coding schemes. Using a constricted double heterostructure laser, a wavelength shift of 0.083 A mA is obtained due to laser self-heating by a dc driving current. The thermoelectric unit is capable of maintaining a constant laser heat-sink temperature within 0.02 C. In addition, miniature lenses and couplers are described which allow efficient coupling of single wavelength modes of junction lasers to thin film optical waveguides. The design of the miniature cylinder lenses and the prism coupling techniques allow 2 mW of single wavelength mode junction laser light to b coupled into thin film waveguides using compact assemblies. Selective grating couplers are also studied.

New PbSnTe heterojunction laser diode structures with improved performance

NASA Technical Reports Server (NTRS)

Fonstad, C. G.; Kasemset, D.; Hsieh, H. H.; Rotter, S.

1980-01-01

Several recent advances in the state-of-the-art of lead tin telluride double heterojunction laser diodes are summarized. Continuous Wave operation to 120 K and pulsed operation to 166 K with single, lowest order transverse mode emission to in excess of four times threshold at 80 K were achieved in buried stripe lasers fabricated by liquid phase epitaxy in the lattice-matched system, lead-tin telluride-lead telluride selenide. At the same time, liquid phase epitaxy was used to produce PbSnTe distributed feedback lasers with much broader continuous single mode tuning ranges than are available from Fabry-Perot lasers. The physics and philosophy behind these advances is as important as the structures and performance of the specific devices embodying the advances, particularly since structures are continually being evolved and the performance continues to be improved.

Band gap and mobility of epitaxial perovskite BaSn1 -xHfxO3 thin films

NASA Astrophysics Data System (ADS)

Shin, Juyeon; Lim, Jinyoung; Ha, Taewoo; Kim, Young Mo; Park, Chulkwon; Yu, Jaejun; Kim, Jae Hoon; Char, Kookrin

2018-02-01

A wide band-gap perovskite oxide BaSn O3 is attracting much attention due to its high electron mobility and oxygen stability. On the other hand, BaHf O3 was recently reported to be an effective high-k gate oxide. Here, we investigate the band gap and mobility of solid solutions of BaS n1 -xH fxO3 (x =0 -1 ) (BSHO) as a basis to build advanced perovskite oxide heterostructures. All the films were epitaxially grown on MgO substrates using pulsed laser deposition. Density functional theory calculations confirmed that Hf substitution does not create midgap states while increasing the band gap. From x-ray diffraction and optical transmittance measurements, the lattice constants and the band-gap values are significantly modified by Hf substitution. We also measured the transport properties of n -type La-doped BSHO films [(Ba ,La ) (Sn ,Hf ) O3 ] , investigating the feasibility of modulation doping in the BaSn O3/BSHO heterostructures. The Hall measurement data revealed that, as the Hf content increases, the activation rate of the La dopant decreases and the scattering rate of the electrons sharply increases. These properties of BSHO films may be useful for applications in various heterostructures based on the BaSn O3 system.

Electrical properties of thermoelectric cobalt Ca3Co4O9 epitaxial heterostructures

NASA Astrophysics Data System (ADS)

Guo, Haizhong; Wang, Shufang; Wang, Le; Jin, Kui-juan; Chen, Shanshan; Fu, Guangsheng; Ge, Chen; Lu, Huibin; Wang, Can; He, Meng; Yang, Guozhen

2013-03-01

Heterostructures fabricated from layered cobalt oxides offer substantial advantages for thermoelectric applications. C-axis-oriented Ca3Co4O9 (CCO) thin films on SrTiO3 substrates and Ca3Co4O9/SrTi0.993Nb0.007O3 p-n heterojunctions were fabricated by pulsed laser deposition. The measurements of in-plane resistivity, thermopower, and magnetic properties performed on the Ca3Co4O9 thin films were found to be comparable to ab-plane those of the single crystals due to good orientation of the films. The temperature dependence of the electrical transport properties of Ca3Co4O9/SrTi0.993Nb0.007O3 p-n heterojunction was also investigated. The junction shows two distinctive transport mechanisms at different temperature regimes under forward bias: tunneling across the Schottky barrier in the temperature range of 100-380 K, and tunneling mechanism at low bias and thermal emission mechanism at high bias between 10 and 100 K. However, for the case of low reverse bias, the trap assisted tunneling process should be considered for the leakage current. Negative magnetoresistance effect is observed at low temperatures, related to the electron spin-dependent scattering and the interface resistance of the heterostructures.

Modified Stranski-Krastanov growth in Ge/Si heterostructures via nanostenciled pulsed laser deposition.

PubMed

MacLeod, J M; Cojocaru, C V; Ratto, F; Harnagea, C; Bernardi, A; Alonso, M I; Rosei, F

2012-02-17

The combination of nanostenciling with pulsed laser deposition (PLD) provides a flexible, fast approach for patterning the growth of Ge on Si. Within each stencilled site, the morphological evolution of the Ge structures with deposition follows a modified Stranski-Krastanov (SK) growth mode. By systematically varying the PLD parameters (laser repetition rate and number of pulses) on two different substrate orientations (111 and 100), we have observed corresponding changes in growth morphology, strain and elemental composition using scanning electron microscopy, atomic force microscopy and μ-Raman spectroscopy. The growth behaviour is well predicted within a classical SK scheme, although the Si(100) growth exhibits significant relaxation and ripening with increasing coverage. Other novel aspects of the growth include the increased thickness of the wetting layer and the kinetic control of Si/Ge intermixing via the PLD repetition rate.

InAs/GaSb Broken-Gap Heterostructure Laser for Terahertz Spectroscopic Sensing Application

DTIC Science & Technology

2010-09-01

from interband tunneling from the emitter is insignificant when forward biasing is applied. This means that HHs will accumulate in the right VB well... dependent on in-plane momentum. An important observation from Figs. 3 and 4 is that the interband tunneling probability is significantly less than the CB...leverages resonant electron injection and interband tunneling electron depletion to realize electron population inversion, while at the same time mitigating

Microwave Semiconductor Research-Materials, Devices and Circuits.

DTIC Science & Technology

1987-10-01

Quantum Well and Graded Refractive Index Separate Confinement Heterostructure Quantum Well Lasers Grown Via Molecular Beam Epitaxy" JSEP PUBLICATIONS...J.M. Ballantyne and A.J. Sievers, J. Appl. Phys., 58, 3145 (1985). 6. "Epitaxial Growth and Characterization of Indian Phosphide and Gallium Indian...Approach to Dispersion Analysis in Graded Index Optical Fiber", by H.J. Carlin and Henry Zmuda. DEGREES 1. Henry Zmuda, Ph.D., July 1984 "A New Approach

SFG analysis of the molecular structures at the surfaces and buried interfaces of PECVD ultralow-dielectric constant pSiCOH

NASA Astrophysics Data System (ADS)

Zhang, Xiaoxian; Myers, John N.; Huang, Huai; Shobha, Hosadurga; Chen, Zhan; Grill, Alfred

2016-02-01

PECVD deposited porous SiCOH with ultralow dielectric constant has been successfully integrated as the insulator in advanced interconnects to decrease the RC delay. The effects of NH3 plasma treatment and the effectiveness of the dielectric repair on molecular structures at the surface and buried interface of a pSiCOH film deposited on top of a SiCNH film on a Si wafer were fully characterized using sum frequency generation vibrational spectroscopy (SFG), supplemented by X-ray photoelectron spectroscopy. After exposure to NH3 plasma for 18 s, about 40% of the methyl groups were removed from the pSiCOH surface, and the average orientation of surface methyl groups tilted more towards the surface. The repair method used here effectively repaired the molecular structures at the pSiCOH surface but did not totally recover the entire plasma-damaged layer. Additionally, simulated SFG spectra with various average orientations of methyl groups at the SiCNH/pSiCOH buried interface were compared with the experimental SFG spectra collected using three different laser input angles to determine the molecular structural information at the SiCNH/pSiCOH buried interface after NH3 plasma treatment and repair. The molecular structures including the coverage and the average orientation of methyl groups at the buried interface were found to be unchanged by NH3 plasma treatment and repair.

High power single mode 980 nm AlGaInAs/AlGaAs quantum well lasers with a very low threshold current

NASA Astrophysics Data System (ADS)

Zhen, Dong; Cuiluan, Wang; Hongqi, Jing; Suping, Liu; Xiaoyu, Ma

2013-11-01

To achieve low threshold current as well as high single mode output power, a graded index separate confinement heterostructure (GRIN-SCH) AlGaInAs/AlGaAs quantum well laser with an optimized ridge waveguide was fabricated. The threshold current was reduced to 8 mA. An output power of 76 mW was achieved at 100 mA current at room temperature, with a slope efficiency of 0.83 W/A and a horizon divergent angle of 6.3°. The maximum single mode output power of the device reached as high as 450 mW.

INTERNATIONAL CONFERENCE ON SEMICONDUCTOR INJECTION LASERS SELCO-87: Continuous-wave distributed-feedback InGaAsP (λ = 1.55 μm) injection heterolasers

NASA Astrophysics Data System (ADS)

Baryshev, V. I.; Golikova, E. G.; Duraev, V. P.; Kuchinskiĭ, V. I.; Kizhaev, K. Yu; Kuksenkov, D. V.; Portnoĭ, E. L.; Smirnitskiĭ, V. B.

1988-11-01

A study was made of stimulated emission from mesa-stripe distributed-feedback lasers in the form of double heterostructures with separate electron and optical confinement. A diffraction grating with a period Λ = 0.46 μm, formed on the surface of the upper waveguide layer by holographic lithography, ensured distributed feedback in the second order. The threshold current for cw operation at room temperature was 35-70 mA, the shift of the emission wavelength with temperature was ~ 0.08 nm/K, and the feedback coefficient deduced from the width of a "Bragg gap" was 110-150 cm- 1.

Photopumped infrared vertical-cavity surface-emitting laser

NASA Astrophysics Data System (ADS)

Hadji, E.; Bleuse, J.; Magnea, N.; Pautrat, J. L.

1996-04-01

The feasibility of a photopumped infrared vertical-cavity surface-emitting laser (VCSEL) based on CdHgTe alloys is demonstrated. The structure of the VCSEL consists of a 16.5-period Cd0.4Hg0.6Te/Cd0.75Hg0.25Te bottom Bragg reflector and a 3λ/4 thick Cd0.75Hg0.25Te cavity, containing a 100-nm-thick well, grown by molecular beam epitaxy. The top mirror is a 7-period YF3/ZnS dielectric stack. The cavity quality factor is Q=350. This heterostructure VCSEL operates at 3.06 μm with a measured power density threshold of 45 kW/cm2 at 10 K.

Pb{sub 1–x}Eu{sub x}Te alloys (0 ⩽ x ⩽ 1) as materials for vertical-cavity surface-emitting lasers in the mid-infrared spectral range of 4–5 μm

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pashkeev, D. A., E-mail: d.pashkeev@gmail.com; Selivanov, Yu. G.; Chizhevskii, E. G.

2016-02-15

The optical properties of epitaxial layers and heterostructures based on Pb{sub 1–x}Eu{sub x}Te alloys (0 ⩽ x ⩽ 1) are analyzed in the context of designing Bragg mirrors and vertical-cavity surface-emitting lasers for the midinfrared spectral range. It is shown that the optimal heteropair for laser microcavities is Pb{sub 1–x}Eu{sub x}Te(x ≈ 0.06)/EuTe. On the basis of this heteropair, highly reflective Bragg mirrors consisting of just three periods and featuring a reflectance of R ⩾ 99.8% at the center of the stop band are grown by molecular-beam epitaxy on BaF{sub 2} (111) substrates. Single-mode optically pumped vertical-cavity surface-emitting lasers formore » the 4–5 μm spectral range operating at liquid-nitrogen temperatures are demonstrated.« less

Reduced TiO2-Graphene Oxide Heterostructure As Broad Spectrum-Driven Efficient Water-Splitting Photocatalysts.

PubMed

Li, Lihua; Yu, Lili; Lin, Zhaoyong; Yang, Guowei

2016-04-06

The reduced TiO2-graphene oxide heterostructure as an alternative broad spectrum-driven efficient water splitting photocatalyst has become a really interesting topic, however, its syntheses has many flaws, e.g., tedious experimental steps, time-consuming, small scale production, and requirement of various additives, for example, hydrazine hydrate is widely used as reductant to the reduction of graphene oxide, which is high toxicity and easy to cause the second pollution. For these issues, herein, we reported the synthesis of the reduced TiO2-graphene oxide heterostructure by a facile chemical reduction agent-free one-step laser ablation in liquid (LAL) method, which achieves extended optical response range from ultraviolet to visible and composites TiO(2-x) (reduced TiO2) nanoparticle and graphene oxide for promoting charge conducting. 30.64% Ti(3+) content in the reduced TiO2 nanoparticles induces the electronic reconstruction of TiO2, which results in 0.87 eV decrease of the band gap for the visible light absorption. TiO(2-x)-graphene oxide heterostructure achieved drastically increased photocatalytic H2 production rate, up to 23 times with respect to the blank experiment. Furthermore, a maximum H2 production rate was measured to be 16 mmol/h/g using Pt as a cocatalyst under the simulated sunlight irradiation (AM 1.5G, 135 mW/cm(2)), the quantum efficiencies were measured to be 5.15% for wavelength λ = 365 ± 10 nm and 1.84% for λ = 405 ± 10 nm, and overall solar energy conversion efficiency was measured to be 14.3%. These findings provided new insights into the broad applicability of this methodology for accessing fascinate photocatalysts.

Microstructures as IR-sensors with Staphylococcus aureus bacteria

NASA Astrophysics Data System (ADS)

Baikova, T. V.; Danilov, P. A.; Gonchukov, S. A.; Yermachenko, V. M.; Ionin, A. A.; Khmelnitskii, R. A.; Kudryashov, S. I.; Nguyen, T. T. H.; Rudenko, A. A.; Saraeva, I. N.; Svistunova, T. S.; Zayarny, D. A.

2017-09-01

Using a micro-hole grating in a supported silver film as a laser-fabricated novel optical platform for surface-enhanced IR absoprtion/reflection spectroscopy, characteristic absorption bands of Staphylococcus aureus, especially - its buried carotenoid fragments - were detected in FT-IR spectra with 10-fold analytical enhancement, paving the way to spectral express-identification of the pathogenic microorganisms.

High sensitivity background absorption measurements in semiconductors

NASA Astrophysics Data System (ADS)

Giannini, Nathan; Silva, Junior R.; Wang, Chengao; Albrecht, Alexander R.; Melgaard, Seth D.; Sheik-Bahae, Mansoor

2015-03-01

Laser cooling in InGaP|GaAs double heterostructures (DHS) has been a sought after goal. Even though very high external quantum efficiency (EQE) has been achieved, background absorption has remained a bottleneck in achieving net cooling. The purpose of this study is to gain more insight into the source of the background absorption for InGaP|GaAs DHS as well as GaAs|AlGaAs DBRs by employing an excite-probe thermal Z-scan measurement.

Unclassified Publications of Lincoln Laboratory. Volume 5

DTIC Science & Technology

1975-12-15

10 TN-1974-36 LIGHT - EMITTING DIODES (LED) JA-4295 LIGHT SCATTERING JA-4456 LINCOLN DIGITAL VOICE TERMINAL TN-1975-53, TN-1975-65 LINCOLN...Hinkley J. O. Sample G. Dresselhaus T. C. Harman J. P. McVittie J. Filson p-n Junction PbSi_xSex Photo- J. P. Donnelly diodes Fabricated by Se...Room-Temperature Operation of GalnAsP/lnP Double- Heterostructure Diode Lasers Emitting at 1.1 (im Transparent Heat Mirrors for Solar-Energy

Oxidation of ultrathin GaSe

DOE PAGES

Thomas Edwin Beechem; McDonald, Anthony E.; Ohta, Taisuke; ...

2015-10-26

Oxidation of exfoliated gallium selenide (GaSe) is investigated through Raman, photoluminescence, Auger, and X-ray photoelectron spectroscopies. Photoluminescence and Raman intensity reductions associated with spectral features of GaSe are shown to coincide with the emergence of signatures emanating from the by-products of the oxidation reaction, namely, Ga 2Se 3 and amorphous Se. Furthermore, photoinduced oxidation is initiated over a portion of a flake highlighting the potential for laser based patterning of two-dimensional heterostructures via selective oxidation.

Surface-emitting terahertz quantum cascade lasers with continuous-wave power in the tens of milliwatt range

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xu, Gangyi, E-mail: gangyi.xu@mail.sitp.ac.cn; Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083; Li, Lianhe

2014-03-03

We demonstrate efficient surface-emitting terahertz frequency quantum cascade lasers with continuous wave output powers of 20–25 mW at 15 K and maximum operating temperatures of 80–85 K. The devices employ a resonant-phonon depopulation active region design with injector, and surface emission is realized using resonators based on graded photonic heterostructures (GPHs). GPHs can be regarded as energy wells for photons and have recently been implemented through grading the period of the photonic structure. In this paper, we show that it is possible to keep the period constant and grade instead the lateral metal coverage across the GPH. This strategy ensures spectrally single-mode operationmore » across the whole laser dynamic range and represents an additional degree of freedom in the design of confining potentials for photons.« less

High power cascade diode lasers emitting near 2 μm

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hosoda, Takashi; Feng, Tao; Shterengas, Leon, E-mail: leon.shterengas@stonybrook.edu

2016-03-28

High-power two-stage cascade GaSb-based type-I quantum well diode lasers emitting near 2 μm were designed and fabricated. Coated devices with cavity length of 3 mm generated about 2 W of continuous wave power from 100-μm-wide aperture at the current of 6 A. The power conversion efficiency peaked at 20%. Carrier recycling between quantum well gain stages was realized using band-to-band tunneling in GaSb/AlSb/InAs heterostructure complemented with optimized electron and hole injector regions. Design optimization eliminated parasitic optical absorption and thermionic emission, and included modification of the InAs quantum wells of electron and composition and doping profile of hole injectors. Utilization of the cascade pumpingmore » scheme yielded 2 μm lasers with improved output power and efficiency compared to existing state-of-the-art diodes.« less

Passive Q-switching of femtosecond-laser-written Tm:KLu(WO4)2 waveguide lasers by graphene and MoS2 saturable absorbers

NASA Astrophysics Data System (ADS)

Kifle, Esrom; Mateos, Xavier; Vázquez de Aldana, Javier Rodríguez; Ródenas, Airan; Loiko, Pavel; Zakharov, Viktor; Veniaminov, Andrey; Yu, Haohai; Zhang, Huaijin; Chen, Yanxue; Aguiló, Magdalena; Díaz, Francesc; Griebner, Uwe; Petrov, Valentin

2018-02-01

A buried depressed-index channel waveguide with a circular cladding and a core diameter of 40 μm is fabricated in a bulk monoclinic 3 at.% Tm:KLu(WO4)2 crystal by femtosecond direct laser writing. In the continuous-wave regime, the Tm waveguide laser generates 210 mW at 1849.6 nm with a slope efficiency η of 40.8%. Passively Q-switched operation is achieved by inserting transmission-type 2D saturable absorbers (SAs) based on few-layer graphene and MoS2. Using the graphene-SA, a maximum average output power of 25 mW is generated at 1844.8 nm. The pulse characteristics (duration/energy) are 88 ns/18 nJ at a repetition rate of 1.39 MHz.

Semiconductor to Metal Transition Characteristics of VO2/NiO Epitaxial Heterostructures Integrated with Si(100)

NASA Astrophysics Data System (ADS)

Molaei, Roya

The novel functionalities of Vanadium dioxide (VO2), such as, several orders of magnitude transition in resistivity and IR transmittance, provide the exciting opportunity for the development of next generation memory, sensor, and field-effect based devices. A critical issue in the development of practical devices based on metal oxides is the integration of high quality epitaxial oxide thin films with the existing silicon technology which is based on silicon (100) substrates. However, silicon is not suitable for epitaxial growth of oxides owing to its tendency to readily form an amorphous oxide layer or silicide at the film-substrate interface. The oxide films deposited directly on silicon exhibit poor crystallinity and are not suitable for device applications. To overcome this challenge, appropriate substrate templates must be developed for the growth of oxide thin films on silicon substrates. The primary objective of this dissertation was to develop an integration methodology of VO2 with Si (100) substrates so they could be used in "smart" sensor type of devices along with other multifunctional devices on the same silicon chip. This was achieved by using a NiO/c- YSZ template layer deposited in situ. It will be shown that if the deposition conditions are controlled properly. This approach was used to integrate VO 2 thin films with Si (100) substrates using pulsed laser deposition (PLD) technique. The deposition methodology of integrating VO2 thin films on silicon using various other template layers will also be discussed. Detailed epitaxial relationship of NiO/c-YSZ/Si(100) heterostructures as a template to growth of VO2 as well as were studied. We also were able to create a p-n junction within a single NiO epilayer through subsequent nanosecond laser annealing, as well as established a structure-property correlation in NiO/c-YSZ/Si(100) thin film epitaxial heterostructures with especial emphasis on the stoichiometry and crystallographic characteristics. NiO/c-YSZ/Si(100) heterostructures were used as template to grow fully relaxed VO2 thin films. The detailed x-ray diffraction, transmission electron microscopy (TEM), electrical characterization results for the deposited films will be presented. In the framework on domain matching epitaxy, epitaxial growth of VO2 (tetragonal crystal structure at growth temperature) on NiO has been explained. Our detailed phi-scan X-ray diffraction measurements corroborate our understanding of the epitaxial growth and in-plane atomic arrangements at the interface. It was observed that the transition characteristics (sharpness, over which electrical property changes are completed, amplitude, transition temperature, and hysteresis) are a strong function of microstructure, strain, and stoichiometry. We have shown that by the choosing the right template layer, strain in the VO2 thin films can be fully relaxed and near-bulk VO2 transition temperatures can be achieved. Finally, I will present my research work on modification of semiconductor-to-metal transition characteristics and effect on room temperature magnetic properties of VO2 thin films upon laser annealing. While the microstructure (epitaxy, crystalline quality etc.) and phase were preserved, we envisage these changes to occur as a result of introduction of oxygen vacancies upon laser treatment.

Resonant photonic States in coupled heterostructure photonic crystal waveguides.

PubMed

Cox, Jd; Sabarinathan, J; Singh, Mr

2010-02-09

In this paper, we study the photonic resonance states and transmission spectra of coupled waveguides made from heterostructure photonic crystals. We consider photonic crystal waveguides made from three photonic crystals A, B and C, where the waveguide heterostructure is denoted as B/A/C/A/B. Due to the band structure engineering, light is confined within crystal A, which thus act as waveguides. Here, photonic crystal C is taken as a nonlinear photonic crystal, which has a band gap that may be modified by applying a pump laser. We have found that the number of bound states within the waveguides depends on the width and well depth of photonic crystal A. It has also been found that when both waveguides are far away from each other, the energies of bound photons in each of the waveguides are degenerate. However, when they are brought close to each other, the degeneracy of the bound states is removed due to the coupling between them, which causes these states to split into pairs. We have also investigated the effect of the pump field on photonic crystal C. We have shown that by applying a pump field, the system may be switched between a double waveguide to a single waveguide, which effectively turns on or off the coupling between degenerate states. This reveals interesting results that can be applied to develop new types of nanophotonic devices such as nano-switches and nano-transistors.

Electrical Conductivity and Barrier Properties of Lithium Niobate Thin Films

NASA Astrophysics Data System (ADS)

Gudkov, S. I.; Baklanova, K. D.; Kamenshchikov, M. V.; Solnyshkin, A. V.; Belov, A. N.

2018-04-01

The thin-film structures made of LiNbO3 and obtained via laser ablation and magnetron sputtering are studied with volt-farad and volt-ampere characteristics. A potential barrier on the Si-LiNbO3 interface was found for both types of the films with the capacitance-voltage characteristics. The current-voltage characteristics showed that there are several conduction mechanisms in the structures studied. The Poole-Frenkel effect and the currents limited by a space charge mainly contribute to the electrical conductivity in the LiNbO3 film produced with the laser ablation method. The currents limited by a space charge contribute to the main mechanism in the film heterostructure obtained with the magnetron sputtering method.

Highly temperature insensitive quantum cascade lasers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bai, Y.; Bandyopadhyay, N.; Tsao, S.

2010-12-20

An InP based quantum cascade laser (QCL) heterostructure emitting around 5 {mu}m is grown with gas-source molecular beam epitaxy. The QCL core design takes a shallow-well approach to maximize the characteristic temperatures, T{sub 0} and T{sub 1}, for operations above room temperature. A T{sub 0} value of 383 K and a T{sub 1} value of 645 K are obtained within a temperature range of 298-373 K. In room temperature continuous wave operation, this design gives a single facet output power of 3 W and a wall plug efficiency of 16% from a device with a cavity length of 5 mmmore » and a ridge width of 8 {mu}m.« less

Design concepts of monolithic metamorphic vertical-cavity surface-emitting lasers for the 1300–1550 nm spectral range

DOE Office of Scientific and Technical Information (OSTI.GOV)

Egorov, A. Yu., E-mail: anton@beam.ioffe.ru; Karachinsky, L. Ya.; Novikov, I. I.

Possible design concepts for long-wavelength vertical-cavity surface-emitting lasers for the 1300–1550 nm spectral range on GaAs substrates are suggested. It is shown that a metamorphic GaAs–InGaAs heterostructure with a thin buffer layer providing rapid transition from the lattice constant of GaAs to that of In{sub x}Ga{sub 1–x}As with an indium fraction of x < 0.3 can be formed by molecular-beam epitaxy. Analysis by transmission electron microscopy demonstrated the effective localization of mismatch dislocations in the thin buffer layer and full suppression of their penetration into the overlying InGaAs metamorphic layer.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mynbaev, K. D., E-mail: mynkad@mail.ioffe.ru; Bazhenov, N. L.; Semakova, A. A.

The electroluminescence of InAs/InAsSbP and InAsSb/InAsSbP LED heterostructures grown on InAs substrates is studied in the temperature range T = 4.2–300 K. At low temperatures (T = 4.2–100 K), stimulated emission is observed for the InAs/InAsSbP and InAsSb/InAsSbP heterostructures with an optical cavity formed normal to the growth plane at wavelengths of, respectively, 3.03 and 3.55 μm. The emission becomes spontaneous at T > 70 K due to the resonant “switch-on” of the CHHS Auger recombination process in which the energy of a recombining electron–hole pair is transferred to a hole, with hole transition to the spin–orbit-split band. It remainsmore » spontaneous up to room temperature because of the influence exerted by other Auger processes. The results obtained show that InAs/InAs(Sb)/InAsSbP structures are promising for the fabrication of vertically emitting mid-IR lasers.« less

In-plane dielectric properties of epitaxial Ba{sub 0.7}Sr{sub 0.3}TiO{sub 3} thin films grown on GaAs for tunable device application

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang Zhibin; Hao Jianhua

2012-09-01

We have epitaxially deposited ferroelectric Ba{sub 0.7}Sr{sub 0.3}TiO{sub 3} (BST) thin films grown on GaAs substrate via SrTiO{sub 3} buffer layer by laser molecular beam epitaxy. Structural characteristics of the heterostructure were measured by various techniques. The in-plane dielectric properties of the heteroepitaxial structure under different applying frequency were investigated from -190 to 90 Degree-Sign C, indicating Curie temperature of the BST film to be around 52 Degree-Sign C. At room temperature, the dielectric constant of the heterostructure under moderate dc bias field can be tuned by more than 30% and K factor used for frequency agile materials is foundmore » to be close to 8. Our results offer the possibility to combine frequency agile electronics of ferroelectric titanate with the high-performance microwave capabilities of GaAs for room temperature tunable device application.« less

Photocurrent measurements in Coupled Quantum Well van der Waals Heterostructures made of 2D Transition Metal Dichalcogenides

NASA Astrophysics Data System (ADS)

Joe, Andrew; Jauregui, Luis; High, Alex; Dibos, Alan; Gulpinar, Elgin; Pistunova, Kateryna; Park, Hongkun; Kim, Philip

, Luis A. Jauregui, Alex A. High, Alan Dibos, Elgin Gulpinar, Kateryna Pistunova, Hongkun Park, Philip Kim Harvard University, Physics Department -abstract- Single layer transition metal dichalcogenides (TMDC) are 2-dimensional (2D) semiconductors van der Waals (vdW) characterized by a direct optical bandgap in the visible wavelength (~2 eV). Characterization of the band alignment between TMDC and the barrier is important for the fabrication of tunneling devices. Here, we fabricate coupled quantum well (CQW) heterostructures made of 2D TMDCs with hexagonal Boron nitride (hBN) as an atomically thin barrier and gate dielectric and with top and bottom metal (or graphite) as gate electrodes. We observe a clear dependence of the photo-generated current with varying hBN thickness, electrode workfunctions, electric field, laser excitation power, excitation wavelength, and temperature. We will discuss the implication of photocurrent in relation to quantum transport process across the vdW interfaces.

Probing the ultimate plasmon confinement limits with a van der Waals heterostructure.

PubMed

Alcaraz Iranzo, David; Nanot, Sébastien; Dias, Eduardo J C; Epstein, Itai; Peng, Cheng; Efetov, Dmitri K; Lundeberg, Mark B; Parret, Romain; Osmond, Johann; Hong, Jin-Yong; Kong, Jing; Englund, Dirk R; Peres, Nuno M R; Koppens, Frank H L

2018-04-20

The ability to confine light into tiny spatial dimensions is important for applications such as microscopy, sensing, and nanoscale lasers. Although plasmons offer an appealing avenue to confine light, Landau damping in metals imposes a trade-off between optical field confinement and losses. We show that a graphene-insulator-metal heterostructure can overcome that trade-off, and demonstrate plasmon confinement down to the ultimate limit of the length scale of one atom. This is achieved through far-field excitation of plasmon modes squeezed into an atomically thin hexagonal boron nitride dielectric spacer between graphene and metal rods. A theoretical model that takes into account the nonlocal optical response of both graphene and metal is used to describe the results. These ultraconfined plasmonic modes, addressed with far-field light excitation, enable a route to new regimes of ultrastrong light-matter interactions. Copyright © 2018 The Authors, some rights reserved; exclusive licensee American Association for the Advancement of Science. No claim to original U.S. Government Works.

Temperature-dependence of hypersound dynamics in SrTiO3/SrRuO3 heterostructures studied by ultrafast spectroscopy

NASA Astrophysics Data System (ADS)

Yang, Chi-Yuan; Yadav, Ajay K.; Ramesh, Ramamoorthy; Wen, Yu-Chieh; Hsu, Chia-Hao; Wu, Maw-Kuen; Chia, Chih-Ta; Lin, Kung-Hsuan

Strontium titanate (SrTiO3, STO) and strontium ruthenate (SrRuO3, SRO) are complex oxide with perovskite structure. Their property, such as thermoelectricity and superconductivity, has been widely investigated for scientific and industrial purposes. Recently, complex oxide heterostructures can be grown by pulsed laser deposition. It opens many possibilities f or new properties of materials. With ultrafast pump-probe spectroscopy, we demonstrated that metal-like SRO thin film can be served as a phonon transducer to generate hypersound with frequency of several tens to several hundreads of GHz. This technique can be utilized to study not only the elastic properties of perovskite thin films but also the interfaces. In this study, we used this technique to study the temperature dependence of structural phases in STO. During the crossing over the soft-mode transition in STO around 110 K, the shortening of phonon lifetime were also observed.

Manipulation of the spin memory of electrons in n-GaAs.

PubMed

Dzhioev, R I; Korenev, V L; Merkulov, I A; Zakharchenya, B P; Gammon, D; Efros, Al L; Katzer, D S

2002-06-24

We report on the optical manipulation of the electron spin relaxation time in a GaAs-based heterostructure. Experimental and theoretical study shows that the average electron spin relaxes through hyperfine interaction with the lattice nuclei, and that the rate can be controlled by electron-electron interactions. This time has been changed from 300 ns down to 5 ns by variation of the laser frequency. This modification originates in the optically induced depletion of an n-GaAs layer.

High resolution x-ray diffraction of high quality 2 micron quaternary indium gallium arsenide antimonide digital alloy heterostructures grown by modulated molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Mourad, Carole Issa

2000-10-01

Growth of high quality mixed anion alloys such as InGaAsSb and AlGaAsSb are critical to laser heterostructures designed for 2--4 micron emission. However, run-to-run reproducibility as well as the ability to reproducibly change alloy compositions within a heterostructure tend to be poor. This is because the competition for incorporation between the two anions (As and Sb) is extremely sensitive to a large number of growth parameters such as temperature, incident fluxes, and growth rate, which may drift during the course of deposition, or are difficult to reset during growth. With the intent of improving reproducibility, we have grown and characterized InGaAsSb and AlGaAsSb "digital alloys" deposited using modulated incident As2 and Sb2 incident fluxes. In0.1Ga 0.9AsySb1-y alloy layers were grown by alternately exposing the film surface to As2 and Sb2 fluxes with a periodicity ranging from ˜9 to ˜22 A. Average alloy composition is determined by the duty-cycle of the anion-oven shutters. Structural characterization using high-resolution x-ray diffraction (HRXRD) shows clear satellite peaks indicating that the digital alloys retain the compositional modulation. Optical characterization using photoluminescence indicate that the digital alloys can successfully replace the conventionally grown quaternary alloys with the same average composition. In addition we have characterized digitally grown InGaAsSb layers using HRXRD and measured the sensitivity of the resulting average composition to the growth temperature. We find that the composition of In0.1Ga0.9AsySb1-y alloy layers grown digitally on GaSb substrates is nearly three times less sensitive to the growth temperature as conventional growth. Digital growth of InGaAsSb and AlGaAsSb layers has enabled the growth of heterostructures containing multiple alloy compositions by toggling between shutter duty-cycles during growth, without necessitating changes to the oven temperatures throughout deposition. We have grown and characterized optically pumped ˜2mum laser structures with InGaAsSb quantum wells and AlGaAsSb barriers both grown using the digital alloy technique. Room temperature operation, a low threshold current density of 104 W/cm2 (at 80K with 808nm pump), and a characteristic temperature (To) of 104 K show the feasibility of applying digital alloying techniques to mid-infrared optical devices.

Multifunctional epitaxial systems on silicon substrates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Singamaneni, Srinivasa Rao, E-mail: ssingam@ncsu.edu; Materials Science Division, Army Research Office, Research Triangle Park, North Carolina 27709; Department of Physics, The University of Texas at El Paso, El Paso, Texas 79968

2016-09-15

Multifunctional heterostructures can exhibit a wide range of functional properties, including colossal magneto-resistance, magnetocaloric, and multiferroic behavior, and can display interesting physical phenomena including spin and charge ordering and strong spin-orbit coupling. However, putting this functionality to work remains a challenge. To date, most of the work reported in the literature has dealt with heterostructures deposited onto closely lattice matched insulating substrates such as DyScO{sub 3}, SrTiO{sub 3} (STO), or STO buffered Si(100) using concepts of lattice matching epitaxy (LME). However, strain in heterostructures grown by LME is typically not fully relaxed and the layers contain detrimental defects such asmore » threading dislocations that can significantly degrade the physical properties of the films and adversely affect the device characteristics. In addition, most of the substrates are incompatible with existing CMOS-based technology, where Si (100) substrates dominate. This review discusses recent advances in the integration of multifunctional oxide and non-oxide materials onto silicon substrates. An alternative thin film growth approach, called “domain matching epitaxy,” is presented which identifies approaches for minimizing lattice strain and unwanted defects in large misfit systems (7%–25% and higher). This approach broadly allows for the integration of multifunctional materials onto silicon substrates, such that sensing, computation, and response functions can be combined to produce next generation “smart” devices. In general, pulsed laser deposition has been used to epitaxially grow these materials, although the concepts developed here can be extended to other deposition techniques, as well. It will be shown that TiN and yttria-stabilized zirconia template layers provide promising platforms for the integration of new functionality into silicon-based computer chips. This review paper reports on a number of thin-film heterostructure systems that span a variety of ferroelectric, multiferroic, magnetic, photocatalytic, and smart materials. Their properties have been extensively investigated and their functionality found to be comparable to films grown on single-crystal oxide substrates previously reported by researchers in this field. In addition, this review explores the utility of using laser processing to introduce stable defects in a controlled way and induce magnetism and engineer the optical and electrical properties of nonmagnetic oxides such as BaTiO{sub 3}, VO{sub 2}, NiO, and TiO{sub 2} as an alternative for incorporating additional magnetic and conducting layers into the structure. These significant materials advancements herald a flurry of exciting new advances in CMOS-compatible multifunctional devices.« less

Local 2D-2D tunneling in high mobility electron systems

NASA Astrophysics Data System (ADS)

Pelliccione, Matthew; Sciambi, Adam; Bartel, John; Goldhaber-Gordon, David; Pfeiffer, Loren; West, Ken; Lilly, Michael; Bank, Seth; Gossard, Arthur

2012-02-01

Many scanning probe techniques have been utilized in recent years to measure local properties of high mobility two-dimensional (2D) electron systems in GaAs. However, most techniques lack the ability to tunnel into the buried 2D system and measure local spectroscopic information. We report scanning gate measurements on a bilayer GaAs/AlGaAs heterostructure that allows for a local modulation of tunneling between two 2D electron layers. We call this technique Virtual Scanning Tunneling Microscopy (VSTM) [1,2] as the influence of the scanning gate is analogous to an STM tip, except at a GaAs/AlGaAs interface instead of a surface. We will discuss the spectroscopic capabilities of the technique, and show preliminary results of measurements on a high mobility 2D electron system.[1] A. Sciambi, M. Pelliccione et al., Appl. Phys. Lett. 97, 132103 (2010).[2] A. Sciambi, M. Pelliccione et al., Phys. Rev. B 84, 085301 (2011).

Scattering mechanisms in shallow undoped Si/SiGe quantum wells

DOE PAGES

Laroche, Dominique; Huang, S. -H.; Nielsen, Erik; ...

2015-10-07

We report the magneto-transport study and scattering mechanism analysis of a series of increasingly shallow Si/SiGe quantum wells with depth ranging from ~ 100 nm to ~ 10 nm away from the heterostructure surface. The peak mobility increases with depth, suggesting that charge centers near the oxide/semiconductor interface are the dominant scattering source. The power-law exponent of the electron mobility versus density curve, μ ∝ n α, is extracted as a function of the depth of the Si quantum well. At intermediate densities, the power-law dependence is characterized by α ~ 2.3. At the highest achievable densities in the quantummore » wells buried at intermediate depth, an exponent α ~ 5 is observed. Lastly, we propose and show by simulations that this increase in the mobility dependence on the density can be explained by a non-equilibrium model where trapped electrons smooth out the potential landscape seen by the two-dimensional electron gas.« less

Strongly enhanced oxygen ion transport through samarium-doped CeO 2 nanopillars in nanocomposite films

DOE PAGES

Yang, Sangmo; Lee, Shinbuhm; Jian, Jie; ...

2015-10-08

Enhancement of oxygen ion conductivity in oxides is important for low-temperature (<500 °C) operation of solid oxide fuel cells, sensors and other ionotronic devices. While huge ion conductivity has been demonstrated in planar heterostructure films, there has been considerable debate over the origin of the conductivity enhancement, in part because of the difficulties of probing buried ion transport channels. Here we create a practical geometry for device miniaturization, consisting of highly crystalline micrometre-thick vertical nanocolumns of Sm-doped CeO 2 embedded in supporting matrices of SrTiO 3. The ionic conductivity is higher by one order of magnitude than plain Sm-doped CeOmore » 2 films. By using scanning probe microscopy, we show that the fast ion-conducting channels are not exclusively restricted to the interface but also are localized at the Sm-doped CeO 2 nanopillars. This work offers a pathway to realize spatially localized fast ion transport in oxides of micrometre thickness.« less

Intruder signature analysis from a phase-sensitive distributed fiber-optic perimeter sensor

NASA Astrophysics Data System (ADS)

Madsen, C. K.; Bae, T.; Snider, T.

2007-09-01

Using a phase-sensitive optical time-domain reflectometer developed at Texas A&M University, this paper reports on recent advances in intruder detection and classificatoin for long perimeters or borders. The system uses light pulses from a narrow linewidth CW laser with low frequency drift to interrogate an optical fiber. The backscattered light is detected, and real-time processing of the received signal is performed. Signatures from single and multiple humans on foot, nearby vehicle traffic on a road, construction-like vehicle activity, and animals have been obtained. Individual footsteps are clearly identified and the cadence readily observed. Time-frequency plots are used to compare the signatures. The detected signal contains information regarding the weight of the intruder as well. An adult weighing around 60kg may produce several π-radian shifts in the optical phase, which is detected by the system. While distances up to 20km have been monitored in previous remote field tests, we report measurements on a local test site with a total fiber length of 12km. A 3-mm diameter fiber cable is buried at a depth of 20-46 cm over a distance of 44m, with a 2km spool of fiber attached prior to the buried fiber and a 10km fiber spool connected in series after the buried section. Recent advances in data acquisition and signal processing allow us to avoid false alarms due to drifts in the laser center frequency and greatly improve the probability of detection. With these advancements, this technology is prime for low-cost perimeter monitoring of high-value and high-security installations such as nuclear power plants and military bases as well as national borders.

Terahertz master-oscillator power-amplifier quantum cascade laser with a grating coupler of extremely low reflectivity.

PubMed

Zhu, Huan; Zhu, Haiqing; Wang, Fangfang; Chang, Gaolei; Yu, Chenren; Yan, Quan; Chen, Jianxin; Li, Lianhe; Davies, A Giles; Linfield, Edmund H; Tang, Zhou; Chen, Pingping; Lu, Wei; Xu, Gangyi; He, Li

2018-01-22

A terahertz master-oscillation power-amplifier quantum cascade laser (THz-MOPA-QCL) is demonstrated where a grating coupler is employed to efficiently extract the THz radiation. By maximizing the group velocity and eliminating the scattering of THz wave in the grating coupler, the residue reflectivity is reduced down to the order of 10 -3 . A buried DFB grating and a tapered preamplifier are proposed to improve the seed power and to reduce the gain saturation, respectively. The THz-MOPA-QCL exhibits single-mode emission, a single-lobed beam with a narrow divergence angle of 18° × 16°, and a pulsed output power of 136 mW at 20 K, which is 36 times that of a second-order DFB laser from the same material.

Laterally coupled distributed feedback type-I quantum well cascade diode lasers emitting near 3.22  μm.

PubMed

Feng, Tao; Hosoda, Takashi; Shterengas, Leon; Kipshidze, Gela; Stein, Aaron; Lu, Ming; Belenky, Gregory

2017-11-01

The laterally coupled distributed feedback (LC-DFB) GaSb-based type-I quantum well cascade diode lasers using the second- and the sixth-order gratings to stabilize the output spectrum near 3.22 μm were designed and fabricated. The laser heterostructure contained three cascades. The devices were manufactured using a single dry etching step defining the ∼5-μm-wide ridge with ∼5-μm-wide gratings sections adjacent to the ridge sides. The grating coupling coefficients were estimated to be about 1  cm -1 . The stability of the single-frequency operation was ensured by alignment of the DFB mode to the relatively wide gain peak. The 2-mm-long second-order LC-DFB lasers generated above 10 mW of continuous-wave (CW) output power at 20°C in epi-side-up configuration and demonstrated power conversion efficiency above 2%. The sixth-order LC-DFB lasers showed lower efficiency but still generated several milliwatts of CW output power. The devices demonstrated a CW current tuning range of about 3.5 nm at the temperature of 20°C.

Laterally coupled distributed feedback type-I quantum well cascade diode lasers emitting near 3.22 μm

DOE Office of Scientific and Technical Information (OSTI.GOV)

Feng, Tao; Hosoda, Takashi; Shterengas, Leon

The laterally coupled distributed feedback (LC-DFB) GaSb-based type-I quantum well cascade diode lasers using the second- and the sixth-order gratings to stabilize the output spectrum near 3.22 μm were designed and fabricated in this paper. The laser heterostructure contained three cascades. The devices were manufactured using a single dry etching step defining the ~5-μm-wide ridge with ~5-μm-wide gratings sections adjacent to the ridge sides. The grating coupling coefficients were estimated to be about 1 cm -1. The stability of the single-frequency operation was ensured by alignment of the DFB mode to the relatively wide gain peak. The 2-mm-long second-order LC-DFBmore » lasers generated above 10 mW of continuous-wave (CW) output power at 20°C in epi-side-up configuration and demonstrated power conversion efficiency above 2%. The sixth-order LC-DFB lasers showed lower efficiency but still generated several milliwatts of CW output power. Finally, the devices demonstrated a CW current tuning range of about 3.5 nm at the temperature of 20°C.« less

Laterally coupled distributed feedback type-I quantum well cascade diode lasers emitting near 3.22 μm

DOE PAGES

Feng, Tao; Hosoda, Takashi; Shterengas, Leon; ...

2017-10-18

The laterally coupled distributed feedback (LC-DFB) GaSb-based type-I quantum well cascade diode lasers using the second- and the sixth-order gratings to stabilize the output spectrum near 3.22 μm were designed and fabricated in this paper. The laser heterostructure contained three cascades. The devices were manufactured using a single dry etching step defining the ~5-μm-wide ridge with ~5-μm-wide gratings sections adjacent to the ridge sides. The grating coupling coefficients were estimated to be about 1 cm -1. The stability of the single-frequency operation was ensured by alignment of the DFB mode to the relatively wide gain peak. The 2-mm-long second-order LC-DFBmore » lasers generated above 10 mW of continuous-wave (CW) output power at 20°C in epi-side-up configuration and demonstrated power conversion efficiency above 2%. The sixth-order LC-DFB lasers showed lower efficiency but still generated several milliwatts of CW output power. Finally, the devices demonstrated a CW current tuning range of about 3.5 nm at the temperature of 20°C.« less

Low absorption loss p-AlGaN superlattice cladding layer for current-injection deep ultraviolet laser diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Martens, M.; Kuhn, C.; Ziffer, E.

2016-04-11

Current injection into AlGaN-based laser diode structures with high aluminum mole fractions for deep ultraviolet emission is investigated. The electrical characteristics of laser diode structures with different p-AlGaN short period superlattice (SPSL) cladding layers with various aluminum mole fractions are compared. The heterostructures contain all elements that are needed for a current-injection laser diode including cladding and waveguide layers as well as an AlGaN quantum well active region emitting near 270 nm. We found that with increasing aluminum content in the p-AlGaN cladding, the diode turn-on voltage increases, while the series resistance slightly decreases. By introducing an SPSL instead of bulkmore » layers, the operating voltage is significantly reduced. A gain guided broad area laser diode structure with transparent p-Al{sub 0.70}Ga{sub 0.30}N waveguide layers and a transparent p-cladding with an average aluminum content of 81% was designed for strong confinement of the transverse optical mode and low optical losses. Using an optimized SPSL, this diode could sustain current densities of more than 4.5 kA/cm{sup 2}.« less

Quantum-cascade lasers in the 7-8 μm spectral range with full top metallization

NASA Astrophysics Data System (ADS)

Kurochkin, A. S.; Babichev, A. V.; Denisov, D. V.; Karachinsky, L. Ya; Novikov, I. I.; Sofronov, A. N.; Firsov, D. A.; Vorobjev, L. E.; Bousseksou, A.; Egorov, A. Yu

2018-03-01

The paper demonstrates the generation of multistage quantum-cascade lasers (QCL) in the 7-8 μm spectral range in the pulse generation mode. The active region structure we used is based on a two-phonon resonance scheme. The QCL heterostructure based on a heteropair of In0.53Ga0.47As/Al0.48In0.52As solid alloys was grown by molecular beam epitaxy and includes 50 identical stages. A waveguide geometry with top cladding with full top metallization (surface- plasmon quantum-cascade lasers) has been used. The developed QCLs have demonstrated multimodal generation in the 7-8 μm spectral range in the pulse mode in the 78-250 K temperature range. The threshold current density for a 1.6 mm long laser and a 20 μm ridge width amounted to ˜ 2.8 kA/cm2 at a temperature of 78 К. A temperature increase to 250 K causes a long-wave shift of the wavelength from 7.6 to 7.9 μm and a jth increase to 5.0 kA/cm2.

Growth control of oxygen stoichiometry in homoepitaxial SrTiO3 films by pulsed laser epitaxy in high vacuum

PubMed Central

Lee, Ho Nyung; Ambrose Seo, Sung S.; Choi, Woo Seok; Rouleau, Christopher M.

2016-01-01

In many transition metal oxides, oxygen stoichiometry is one of the most critical parameters that plays a key role in determining the structural, physical, optical, and electrochemical properties of the material. However, controlling the growth to obtain high quality single crystal films having the right oxygen stoichiometry, especially in a high vacuum environment, has been viewed as a challenge. In this work, we show that, through proper control of the plume kinetic energy, stoichiometric crystalline films can be synthesized without generating oxygen defects even in high vacuum. We use a model homoepitaxial system of SrTiO3 (STO) thin films on single crystal STO substrates. Physical property measurements indicate that oxygen vacancy generation in high vacuum is strongly influenced by the energetics of the laser plume, and it can be controlled by proper laser beam delivery. Therefore, our finding not only provides essential insight into oxygen stoichiometry control in high vacuum for understanding the fundamental properties of STO-based thin films and heterostructures, but expands the utility of pulsed laser epitaxy of other materials as well. PMID:26823119

Magnetic field-modulated photo-thermo-electric effect in Fe/GaAs film

DOE Office of Scientific and Technical Information (OSTI.GOV)

Qiao, Shuang; Liu, Jihong; Yan, Guoying

2015-11-02

Ferromagnet/semiconductor heterostructure, such as Fe/GaAs, is always one of the key issues in spintronics due to its prerequisite for the realization of spin sensitive devices. In this letter, a lateral photoelectric effect (LPE) was observed in Fe/GaAs. Our results show that the sensitivity was not related to laser wavelength, but only proportional to laser power, suggesting that the lateral photovoltage was induced by photo-thermo-electric effect. Moreover, we also observe that the voltage signal increases with the increase in applied field due to decreasing scattering probability for spin-polarized electrons. Our finding of LPE adds another functionality to the Fe/GaAs system andmore » will be useful in development of spin-polarized voltage devices.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Veselov, D. A., E-mail: dmitriy90@list.ru; Shashkin, I. S.; Bakhvalov, K. V.

Semiconductor lasers based on MOCVD-grown AlGaInAs/InP separate-confinement heterostructures are studied. It is shown that raising only the energy-gap width of AlGaInAs-waveguides without the introduction of additional barriers results in more pronounced current leakage into the cladding layers. It is found that the introduction of additional barrier layers at the waveguide–cladding-layer interface blocks current leakage into the cladding layers, but results in an increase in the internal optical loss with increasing pump current. It is experimentally demonstrated that the introduction of blocking layers makes it possible to obtain maximum values of the internal quantum efficiency of stimulated emission (92%) and continuouswavemore » output optical power (3.2 W) in semiconductor lasers in the eye-safe wavelength range (1400–1600 nm).« less

Dynamical control of Mn spin-system cooling by photogenerated carriers in a (Zn,Mn)Se/BeTe heterostructure

NASA Astrophysics Data System (ADS)

Debus, J.; Maksimov, A. A.; Dunker, D.; Yakovlev, D. R.; Tartakovskii, I. I.; Waag, A.; Bayer, M.

2010-08-01

The magnetization dynamics of the Mn spin system in an undoped (Zn,Mn)Se/BeTe type-II quantum well was studied by a time-resolved pump-probe photoluminescence technique. The Mn spin temperature was evaluated from the giant Zeeman shift of the exciton line in an external magnetic field of 3 T. The relaxation dynamics of the Mn spin temperature to the equilibrium temperature of the phonon bath after the pump-laser-pulse heating can be accelerated by the presence of free electrons. These electrons, generated by a control laser pulse, mediate the spin and energy transfer from the Mn spin system to the lattice and bypass the relatively slow direct spin-lattice relaxation of the Mn ions.

Origin of terminal voltage variations due to self-mixing in terahertz frequency quantum cascade lasers.

PubMed

Grier, Andrew; Dean, Paul; Valavanis, Alexander; Keeley, James; Kundu, Iman; Cooper, Jonathan D; Agnew, Gary; Taimre, Thomas; Lim, Yah Leng; Bertling, Karl; Rakić, Aleksandar D; Li, Lianhe H; Harrison, Paul; Linfield, Edmund H; Ikonić, Zoran; Davies, A Giles; Indjin, Dragan

2016-09-19

We explain the origin of voltage variations due to self-mixing in a terahertz (THz) frequency quantum cascade laser (QCL) using an extended density matrix (DM) approach. Our DM model allows calculation of both the current-voltage (I-V) and optical power characteristics of the QCL under optical feedback by changing the cavity loss, to which the gain of the active region is clamped. The variation of intra-cavity field strength necessary to achieve gain clamping, and the corresponding change in bias required to maintain a constant current density through the heterostructure is then calculated. Strong enhancement of the self-mixing voltage signal due to non-linearity of the (I-V) characteristics is predicted and confirmed experimentally in an exemplar 2.6 THz bound-to-continuum QCL.

Laser vibration sensing at Fraunhofer IOSB: review and applications

NASA Astrophysics Data System (ADS)

Lutzmann, Peter; Göhler, Benjamin; Hill, Chris A.; van Putten, Frank

2017-03-01

Laser vibrometry based on coherent detection allows noncontact measurements of small-amplitude vibration characteristics of objects. This technique, commonly using the Doppler effect, offers high potential for short-range civil applications and for medium- or long-range applications in defense and security. Most commercially available laser Doppler vibrometers are for short ranges (up to a few tens of meters) and use a single beam from a low-power HeNe laser source (λ=633 nm). Medium- or long-range applications need higher laser output power, and thus, appropriate vibrometers typically operate at 1.5, 2, or 10.6 μm to meet the laser safety regulations. Spatially resolved vibrational information can be obtained from an object by using scanning laser vibrometers. To reduce measuring time and to measure transient object movements and vibrational mode structures of objects, several approaches to multibeam laser Doppler vibrometry have been developed, and some of them are already commercially available for short ranges. We focus on applications in the field of defense and security, such as target classification and identification, including camouflaged or partly concealed targets, and the detection of buried land mines. Examples of civil medium-range applications are also given.

All-MOCVD-grown BH laser on P-InP substrates

NASA Astrophysics Data System (ADS)

Nishimura, Tadashi; Ishimura, E.; Nakajima, Yasuo; Tada, Hitoshi; Kimura, T.; Ohkura, Y.; Goto, Katsuhiko; Omura, Etsuji; Aiga, Masao

1993-07-01

A very low cw threshold current of 2.5 mA ( 25 degree(s)C) and 8.0 mA ( 80 degree(s)C) with high reliability has been realized in the all-MOCVD grown BH lasers on p-InP substrates. A strained MQW active layer of 1.3 micrometers wavelength and the precise carrier confinement buried structure by MOCVD is employed for the BH lasers. The excellent potential of long lifetime of the all-MOCVD grown laser has also been confirmed. After the high temperature and the high current (100 degree(s)C, 200 mA) aging test, no significant degradation is observed which is comparable with the well-established LPE grown lasers. The BH laser is also operating stably over 3700 hrs under the APC condition of 50 degree(s)C, 10 mW. Finally, an extremely uniform 10-element all-MOCVD grown LD array is demonstrated, which has the threshold current uniformity of 2.4 +/- 0.1 mA ( 25 degree(s)C) and 9.2 +/- 0.2 mA ( 80 degree(s)C). The growth mechanism in the MOCVD is also described.

High performance InAs quantum dot lasers on silicon substrates by low temperature Pd-GaAs wafer bonding

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Zihao; Preble, Stefan F.; Yao, Ruizhe

2015-12-28

InAs quantum dot (QD) laser heterostructures have been grown by molecular beam epitaxy system on GaAs substrates, and then transferred to silicon substrates by a low temperature (250 °C) Pd-mediated wafer bonding process. A low interfacial resistivity of only 0.2 Ω cm{sup 2} formed during the bonding process is characterized by the current-voltage measurements. The InAs QD lasers on Si exhibit comparable characteristics to state-of-the-art QD lasers on silicon substrates, where the threshold current density J{sub th} and differential quantum efficiency η{sub d} of 240 A/cm{sup 2} and 23.9%, respectively, at room temperature are obtained with laser bars of cavity length and waveguide ridgemore » of 1.5 mm and 5 μm, respectively. The InAs QD lasers also show operation up to 100 °C with a threshold current density J{sub th} and differential quantum efficiency η{sub d} of 950 A/cm{sup 2} and 9.3%, respectively. The temperature coefficient T{sub 0} of 69 K from 60 to 100 °C is characterized from the temperature dependent J{sub th} measurements.« less

Design optimization of a compact photonic crystal microcavity based on slow light and dispersion engineering for the miniaturization of integrated mode-locked lasers

NASA Astrophysics Data System (ADS)

Kemiche, Malik; Lhuillier, Jérémy; Callard, Ségolène; Monat, Christelle

2018-01-01

We exploit slow light (high ng) modes in planar photonic crystals in order to design a compact cavity, which provides an attractive path towards the miniaturization of near-infrared integrated fast pulsed lasers. By applying dispersion engineering techniques, we can design structures with a low dispersion, as needed by mode-locking operation. Our basic InP SiO2 heterostructure is robust and well suited to integrated laser applications. We show that an optimized 30 μm long cavity design yields 9 frequency-equidistant modes with a FSR of 178 GHz within a 11.5 nm bandwidth, which could potentially sustain the generation of optical pulses shorter than 700 fs. In addition, the numerically calculated quality factors of these modes are all above 10,000, making them suitable for reaching laser operation. Thanks to the use of a high group index (28), this cavity design is almost one order of magnitude shorter than standard rib-waveguide based mode-locked lasers. The use of slow light modes in planar photonic crystal based cavities thus relaxes the usual constraints that tightly link the device size and the quality (peak power, repetition rate) of the pulsed laser signal.

Adaptive Quantum Control of Charge Motion in Semiconductor Heterostructures

NASA Astrophysics Data System (ADS)

Reitze, David

1998-05-01

Quantum control of electronic wavepacket motion and interactions using ultrafast lasers has moved from the conceptual stage to reality, in large part driven by advances in quantum control theory (R. J. Gordon and S. A. Rice, Ann. Rev. Phys. Chem. (1997), in press.) (M. Shapiro and P. Brumer, J. Chem. Soc. Faraday Trans. V93, 1263 (1997).) (D. Neuhauser and H. Rabitz, Acc. Chem. Res. V26, 496 (1993).) and experimental pulse shaping methods (A. M. Weiner, D. E. Leaird, G. P. Wiederrecht, and K. A. Nelson, Science V247, 412 (1990).) (A. Efimov, C. Schaffer, and D. H. Reitze, J. Opt. Soc. Am VB12, 1968 (1995).). Here, we apply these methods to controlling charge motion in semiconductor heterostructures. Control of coherent charge dynamics in heterostructures enjoys an advantage in that spatial potential profiles can be adjusted almost arbitrarily. Thus, control of charge motion can be exerted by tailoring both the temporal and spatial interactions of the charges with the controlling optical and static fields. In this talk, we demonstrate an experimental feedback loop which adaptively shapes fs pulses in a quantum contol pump-probe experiment, apply it to the control of coherent wavepacket motion in DC-biased asymmetric double quantum well(ADQW) structures, and compare to theoretical predictions of quantum control in ADQWs (N. M. Beach, D. H. Reitze, and J. L. Krause, submitted to Opt. Exp.) (J. L. Krause, D. H. Reitze, G. D. Sanders, A. Kuznetsov, and C. J. Stanton, to appear in Phys. Rev. B).

Spin transport study in a Rashba spin-orbit coupling system

PubMed Central

Mei, Fuhong; Zhang, Shan; Tang, Ning; Duan, Junxi; Xu, Fujun; Chen, Yonghai; Ge, Weikun; Shen, Bo

2014-01-01

One of the most important topics in spintronics is spin transport. In this work, spin transport properties of two-dimensional electron gas in AlxGa1-xN/GaN heterostructure were studied by helicity-dependent photocurrent measurements at room temperature. Spin-related photocurrent was detected under normal incidence of a circularly polarized laser with a Gaussian distribution. On one hand, spin polarized electrons excited by the laser generate a diffusive spin polarization current, which leads to a vortex charge current as a result of anomalous circular photogalvanic effect. On the other hand, photo-induced spin polarized electrons driven by a longitudinal electric field give rise to a transverse current via anomalous Hall Effect. Both of these effects originated from the Rashba spin-orbit coupling. By analyzing spin-related photocurrent varied with laser position, the contributions of the two effects were differentiated and the ratio of the spin diffusion coefficient to photo-induced anomalous spin Hall mobility Ds/μs = 0.08 V was extracted at room temperature. PMID:24504193

INTERNATIONAL CONFERENCE ON SEMICONDUCTOR INJECTION LASERS SELCO-87: Refractive indices of superlattices made of III-V semiconductor compounds and their solid solutions and semiconductor waveguide laser structures

NASA Astrophysics Data System (ADS)

Unger, K.

1988-11-01

An analysis is made of the theoretical problems encountered in precision calculations of refractive indices of semiconductor materials arising in connection with the use of superlattices as active layers in double-heterostructure lasers and in connection with the use of the impurity-induced disordering effect, i.e., the ability to transform selectively a superlattice into a corresponding solid solution. This can be done by diffusion or ion implantation. A review is given of calculations of refractive indices based on the knowledge of the energy band structure and the role of disorder is considered particularly. An anomaly observed in the (InAl)As system is considered. It is shown that the local field effects and exciton transitions are important. A reasonable approach is clearly a direct calculation of the difference between the refractive indices of superlattices based on compounds and of those based on their solid solutions.

Liquid-phase epitaxy grown PbSnTe distributed feedback laser diodes with broad continuous single-mode tuning range

NASA Technical Reports Server (NTRS)

Hsieh, H.-H.; Fonstad, C. G.

1980-01-01

Distributed feedback (DFB) pulsed laser operation has been demonstrated in stripe geometry Pb(1-x)Sn(x)Te double-heterostructures grown by liquid-phase epitaxy. The grating structure of 0.79 micron periodicity operates in first order near 12.8 microns and was fabricated prior to the liquid-phase epitaxial growth using holographic exposure techniques. These DFB lasers had moderate thresholds, 3.6 kA/sq cm, and the output power versus current curves exhibited a sharp turn-on free of kinks. Clean, single-mode emission spectra, continuously tunable over a range in excess of 20 per cm, centered about 780 per cm (12.8 microns), and at an average rate of 1.2 per cm-K from 9 to 26 K, were observed. While weaker modes could at times be seen in the spectrum, substantially single-mode operation was obtained over the entire operating range and to over 10 times threshold.

Materials Science and Device Physics of 2-Dimensional Semiconductors

NASA Astrophysics Data System (ADS)

Fang, Hui

Materials and device innovations are the keys to future technology revolution. For MOSFET scaling in particular, semiconductors with ultra-thin thickness on insulator platform is currently of great interest, due to the potential of integrating excellent channel materials with the industrially mature Si processing. Meanwhile, ultra-thin thickness also induces strong quantum confinement which in turn affect most of the material properties of these 2-dimensional (2-D) semiconductors, providing unprecedented opportunities for emerging technologies. In this thesis, multiple novel 2-D material systems are explored. Chapter one introduces the present challenges faced by MOSFET scaling. Chapter two covers the integration of ultrathin III V membranes with Si. Free standing ultrathin III-V is studied to enable high performance III-V on Si MOSFETs with strain engineering and alloying. Chapter three studies the light absorption in 2-D membranes. Experimental results and theoretical analysis reveal that light absorption in the 2-D quantum membranes is quantized into a fundamental physical constant, where we call it the quantum unit of light absorption, irrelevant of most of the material dependent parameters. Chapter four starts to focus on another 2-D system, atomic thin layered chalcogenides. Single and few layered chalcogenides are first explored as channel materials, with focuses in engineering the contacts for high performance MOSFETs. Contact treatment by molecular doping methods reveals that many layered chalcogenides other than MoS2 exhibit good transport properties at single layer limit. Finally, Chapter five investigated 2-D van der Waals heterostructures built from different single layer chalcogenides. The investigation in a WSe2/MoS2 hetero-bilayer shows a large Stokes like shift between photoluminescence peak and lowest absorption peak, as well as strong photoluminescence intensity, consistent with spatially indirect transition in a type II band alignment in this van der Waals heterostructure. This result enables new family of semiconductor heterostructures having tunable optoelectronic properties with customized composite layers and highlights the ability to build van der Waals semiconductor heterostructure lasers/LEDs.

Optoelectronics: Continuously Spatial-Wavelength-Tunable Nanowire Lasers on a Single Chip

DTIC Science & Technology

2014-01-28

journals (N/A for none) 1. P. L. Nichols, Z. Liu, L. Yin, and C. Z. Ning, CdxPb1- xS Alloy Nanowires and Heterostructures with Simultaneous Emission in Mid...multiple-bandgap solar cells using spatially composition-graded CdxPb1- xS nanowires on a single substrate: a design study, Optics Express (07 2011...Quaternary ZnCdSSe Alloy Nanowires with Tunable Light Emission Between 350 nm and 710 nm on a Single Substrate, (11 2009) C.Z. Ning, A.L. Pan, and

Coherent acoustic phonons in nanostructures

NASA Astrophysics Data System (ADS)

Dekorsy, T.; Taubert, R.; Hudert, F.; Bartels, A.; Habenicht, A.; Merkt, F.; Leiderer, P.; Köhler, K.; Schmitz, J.; Wagner, J.

2008-02-01

Phonons are considered as a most important origin of scattering and dissipation for electronic coherence in nanostructures. The generation of coherent acoustic phonons with femtosecond laser pulses opens the possibility to control phonon dynamics in amplitude and phase. We demonstrate a new experimental technique based on two synchronized femtosecond lasers with GHz repetition rate to study the dynamics of coherently generated acoustic phonons in semiconductor heterostructures with high sensitivity. High-speed synchronous optical sampling (ASOPS) enables to scan a time-delay of 1 ns with 100 fs time resolution with a frequency in the kHz range without a moving part in the set-up. We investigate the dynamics of coherent zone-folded acoustic phonons in semiconductor superlattices (GaAs/AlAs and GaSb/InAs) and of coherent vibration of metallic nanostructures of non-spherical shape using ASOPS.

Suppression of electron leakage in 808 nm laser diodes with asymmetric waveguide layer

NASA Astrophysics Data System (ADS)

Xiang, Li; Degang, Zhao; Desheng, Jiang; Ping, Chen; Zongshun, Liu; Jianjun, Zhu; Ming, Shi; Danmei, Zhao; Wei, Liu

2016-01-01

Electron leakage in GaAs-based separately confined heterostructure 808 nm laser diodes (SCH LDs) has a serious influence on device performance. Here, in order to reduce the energy of electrons injected into the quantum well (QW), an AlGaAs interlayer with a smaller Al component is added between the active region and the n-side waveguide. Numerical device simulation reveals that when the Al-composition of the AlGaAs interlayer and its thickness are properly elected, the electron leakage is remarkably depressed and the characteristics of LDs are improved, owing to the reduction of injected electron energy and the improvement of QW capture efficiency. Project supported by the National Natural Science Foundation of China (Nos. 61377020, 61376089, 61223005, 61176126) and the National Science Fund for Distinguished Young Scholars (No. 60925017).

Epitaxial titanium diboride films grown by pulsed-laser deposition

NASA Astrophysics Data System (ADS)

Zhai, H. Y.; Christen, H. M.; Cantoni, C.; Goyal, A.; Lowndes, D. H.

2002-03-01

Epitaxial, smooth, and low-resistivity titanium diboride (TiB2) films have been grown on SiC substrates using pulsed-laser deposition. Combined studies from ex situ x-ray diffraction and in situ reflection high-energy electron diffraction indicate the crystallographic alignment between TiB2 and SiC both parallel and normal to the substrate. Atomic force microscopy and scanning electron microscopy studies show that these epitaxial films have a smooth surface, and the resistivity of these films is comparable to that of single-crystal TiB2. Growth of these films is motivated by this material's structural and chemical similarity and lattice match to the newly discovered superconductor MgB2, both to gain further insight into the physical mechanisms of diborides in general and, more specifically, as a component of MgB2-based thin-film heterostructures.

Layer-by-layer growth by pulsed laser deposition in the unit-cell limit.

NASA Astrophysics Data System (ADS)

Kareev, M.; Prosandeev, S.; Liu, J.; Ryan, P.; Freeland, J. W.; Chakhalian, J.

2009-03-01

Unlike conventional growth of complex oxide heterostructures, the ultimate unit cell limit imposes strict constrains for a multitude of parameters critical to layer-by-layer growth. Here we report on detailed analysis of far-from-equilibrium growth by interrupted pulsed laser deposition with application to RENiO3/LaAlO3 superlattices grown on a diverse set of substrates SrTiO3, NdGaO3, LSAT and LaAlO3. A combination of in-situ high-pressure RHEED and AFM along with extensive data obtained from synchrotron based XRD and resonant XAS allows us critically assess the meaning of RHEED intensity oscillation and the effect of a polar/non-polar interface on the heteroepitaxial growth. The role of defects formed during the initial stages of growth is also addressed.

Smooth and vertical facet formation for AlGaN-based deep-UV laser diodes.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bogart, Katherine Huderle Andersen; Shul, Randy John; Stevens, Jeffrey

2008-10-01

Using a two-step method of plasma and wet chemical etching, we demonstrate smooth, vertical facets for use in Al{sub x} Ga{sub 1-x} N-based deep-ultraviolet laser-diode heterostructures where x = 0 to 0.5. Optimization of plasma-etching conditions included increasing both temperature and radiofrequency (RF) power to achieve a facet angle of 5 deg from vertical. Subsequent etching in AZ400K developer was investigated to reduce the facet surface roughness and improve facet verticality. The resulting combined processes produced improved facet sidewalls with an average angle of 0.7 deg from vertical and less than 2-nm root-mean-square (RMS) roughness, yielding an estimated reflectivity greatermore » than 95% of that of a perfectly smooth and vertical facet.« less

Coupled ridge waveguide distributed feedback quantum cascade laser arrays

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Ying-Hui; Zhang, Jin-Chuan, E-mail: zhangjinchuan@semi.ac.cn; Yan, Fang-Liang

2015-04-06

A coupled ridge waveguide quantum cascade laser (QCL) array consisting of fifteen elements with parallel integration was presented. In-phase fundamental mode operation in each element is secured by both the index-guided nature of the ridge and delicate loss management by properly designed geometries of the ridges and interspaces. Single-lobe lateral far-field with a nearly diffraction limited beam pattern was obtained. By incorporating a one-dimensional buried distributed feedback grating, the in-phase-operating coupled ridge waveguide QCL design provides an efficient solution to obtaining high output power and stable single longitudinal mode emission. The simplicity of this structure and fabrication process makes thismore » approach attractive to many practical applications.« less

Documenting Bronze Age Akrotiri on Thera Using Laser Scanning, Image-Based Modelling and Geophysical Prospection

NASA Astrophysics Data System (ADS)

Trinks, I.; Wallner, M.; Kucera, M.; Verhoeven, G.; Torrejón Valdelomar, J.; Löcker, K.; Nau, E.; Sevara, C.; Aldrian, L.; Neubauer, E.; Klein, M.

2017-02-01

The excavated architecture of the exceptional prehistoric site of Akrotiri on the Greek island of Thera/Santorini is endangered by gradual decay, damage due to accidents, and seismic shocks, being located on an active volcano in an earthquake-prone area. Therefore, in 2013 and 2014 a digital documentation project has been conducted with support of the National Geographic Society in order to generate a detailed digital model of Akrotiri's architecture using terrestrial laser scanning and image-based modeling. Additionally, non-invasive geophysical prospection has been tested in order to investigate its potential to explore and map yet buried archaeological remains. This article describes the project and the generated results.

Nanowires, nanostructures and devices fabricated therefrom

DOEpatents

Majumdar, Arun; Shakouri, Ali; Sands, Timothy D.; Yang, Peidong; Mao, Samuel S.; Russo, Richard E.; Feick, Henning; Weber, Eicke R.; Kind, Hannes; Huang, Michael; Yan, Haoquan; Wu, Yiying; Fan, Rong

2005-04-19

One-dimensional nanostructures having uniform diameters of less than approximately 200 nm. These inventive nanostructures, which we refer to as "nanowires", include single-crystalline homostructures as well as heterostructures of at least two single-crystalline materials having different chemical compositions. Because single-crystalline materials are used to form the heterostructure, the resultant heterostructure will be single-crystalline as well. The nanowire heterostructures are generally based on a semiconducting wire wherein the doping and composition are controlled in either the longitudinal or radial directions, or in both directions, to yield a wire that comprises different materials. Examples of resulting nanowire heterostructures include a longitudinal heterostructure nanowire (LOHN) and a coaxial heterostructure nanowire (COHN).

Three-dimensional integration of microoptical components buried inside photosensitive glass by femtosecond laser direct writing

NASA Astrophysics Data System (ADS)

Wang, Zhongke; Sugioka, Koji; Midorikawa, Katsumi

2007-12-01

We report the three-dimensional (3D) integration of microoptical components such as microlenses, micromirrors and optical waveguides in a single glass chip by femtosecond (fs) laser direct writing. First, two types of microoptical lenses were fabricated inside photosensitive Foturan glass by forming hollow microstructures using fs laser direct writing followed by thermal treatment, successive wet etching and additional annealing. One type of lens is the cylindrical microlens with a curvature radius R of 1.0 mm, and the other is the plano-convex microlens with radius R of 0.75 mm. Subsequently, by the continuous procedure of hollow microstructure fabrication, a micromirror was integrated with the plano-convex microlens in the single glass chip. Further integration of waveguides was performed by internal refractive index modification using fs laser direct writing after the hollow structure fabrication of the microlens and the micromirror. A demonstration of the laser beam transmission in the integrated optical microdevice shows that the 3D integration of waveguides with a micromirror and a microoptical lens in a single glass chip is highly effective for light beam guiding and focusing.

Design of photonic crystal surface emitting lasers with indium-tin-oxide top claddings

NASA Astrophysics Data System (ADS)

Huang, Shen-Che; Hong, Kuo-Bin; Chiu, Han-Lun; Lan, Shao-Wun; Chang, Tsu-Chi; Li, Heng; Lu, Tien-Chang

2018-02-01

Electrically pumped GaAs-based photonic crystal surface emitting lasers were fabricated using a simple fabrication process by directly capping the indium-tin-oxide transparent conducting thin film as the top cladding layer upon a photonic crystal layer. Optimization of the separate-confinement heterostructures of a laser structure is crucial to improving characteristics by providing advantageous optical confinements. The turn-on voltage, series resistance, threshold current, and slope efficiency of the laser with a 100 × 100 μm2 photonic crystal area operated at room temperature were 1.3 V, 1.5 Ω, 121 mA, and 0.2 W/A, respectively. Furthermore, we demonstrated a single-lobed lasing wavelength of 928.6 nm at 200 mA and a wavelength redshift rate of 0.05 nm/K in temperature-dependent measurements. The device exhibited the maximum output power of approximately 400 mW at an injection current of 2 A; moreover, divergence angles of less than 1° for the unpolarized circular-shaped laser beam were measured at various injection currents. Overall, the low threshold current, excellent beam quality, small divergence, high output power, and high-operating-temperature (up to 343 K) of our devices indicate that they can potentially fill the requirements for next-generation light sources and optoelectronic devices.

Analysis of quantum semiconductor heterostructures by ballistic electron emission spectroscopy

NASA Astrophysics Data System (ADS)

Guthrie, Daniel K.

1998-09-01

The microelectronics industry is diligently working to achieve the goal of gigascale integration (GSI) by early in the 21st century. For the past twenty-five years, progress toward this goal has been made by continually scaling down device technology. Unfortunately, this trend cannot continue to the point of producing arbitrarily small device sizes. One possible solution to this problem that is currently under intensive study is the relatively new area of quantum devices. Quantum devices represent a new class of microelectronic devices that operate by utilizing the wave-like nature (reflection, refraction, and confinement) of electrons together with the laws of quantum mechanics to construct useful devices. One difficulty associated with these structures is the absence of measurement techniques that can fully characterize carrier transport in such devices. This thesis addresses this need by focusing on the study of carrier transport in quantum semiconductor heterostructures using a relatively new and versatile measurement technique known as ballistic electron emission spectroscopy (BEES). To achieve this goal, a systematic approach that encompasses a set of progressively more complex structures is utilized. First, the simplest BEES structure possible, the metal/semiconductor interface, is thoroughly investigated in order to provide a foundation for measurements on more the complex structures. By modifying the semiclassical model commonly used to describe the experimental BEES spectrum, a very complete and accurate description of the basic structure has been achieved. Next, a very simple semiconductor heterostructure, a Ga1-xAlxAs single-barrier structure, was measured and analyzed. Low-temperature measurements on this structure were used to investigate the band structure and electron-wave interference effects in the Ga1-xAlxAs single barrier structure. These measurements are extended to a simple quantum device by designing, measuring, and analyzing a set of complementary electron-wave Fabry-Perot quantum interference filters which included both a half- and a quarter-electron-wavelength resonant device. High-resolution, low noise, BEES spectra obtained on these devices at low-temperature were used to measure the zero-bias electron transmittance as a function of injected energy for these resonant devices. Finally, by analyzing BEES spectra taken at various spatial locations, one monolayer variations in the thickness of a buried quantum well have been detected.

Methods of fabricating nanostructures and nanowires and devices fabricated therefrom

DOEpatents

Majumdar, Arun [Orinda, CA; Shakouri, Ali [Santa Cruz, CA; Sands, Timothy D [Moraga, CA; Yang, Peidong [Berkeley, CA; Mao, Samuel S [Berkeley, CA; Russo, Richard E [Walnut Creek, CA; Feick, Henning [Kensington, CA; Weber, Eicke R [Oakland, CA; Kind, Hannes [Schaffhausen, CH; Huang, Michael [Los Angeles, CA; Yan, Haoquan [Albany, CA; Wu, Yiying [Albany, CA; Fan, Rong [El Cerrito, CA

2009-08-04

One-dimensional nanostructures having uniform diameters of less than approximately 200 nm. These inventive nanostructures, which we refer to as "nanowires", include single-crystalline homostructures as well as heterostructures of at least two single-crystalline materials having different chemical compositions. Because single-crystalline materials are used to form the heterostructure, the resultant heterostructure will be single-crystalline as well. The nanowire heterostructures are generally based on a semiconducting wire wherein the doping and composition are controlled in either the longitudinal or radial directions, or in both directions, to yield a wire that comprises different materials. Examples of resulting nanowire heterostructures include a longitudinal heterostructure nanowire (LOHN) and a coaxial heterostructure nanowire (COHN).

Methods Of Fabricating Nanosturctures And Nanowires And Devices Fabricated Therefrom

DOEpatents

Majumdar, Arun; Shakouri, Ali; Sands, Timothy D.; Yang, Peidong; Mao, Samuel S.; Russo, Richard E.; Feick, Henning; Weber, Eicke R.; Kind, Hannes; Huang, Michael; Yan, Haoquan; Wu, Yiying; Fan, Rong

2006-02-07

One-dimensional nanostructures having uniform diameters of less than approximately 200 nm. These inventive nanostructures, which we refer to as "nanowires", include single-crystalline homostructures as well as heterostructures of at least two single-crystalline materials having different chemical compositions. Because single-crystalline materials are used to form the heterostructure, the resultant heterostructure will be single-crystalline as well. The nanowire heterostructures are generally based on a semiconducting wire wherein the doping and composition are controlled in either the longitudinal or radial directions, or in both directions, to yield a wire that comprises different materials. Examples of resulting nanowire heterostructures include a longitudinal heterostructure nanowire (LOHN) and a coaxial heterostructure nanowire (COHN).

Methods of fabricating nanostructures and nanowires and devices fabricated therefrom

DOEpatents

Majumdar, Arun; Shakouri, Ali; Sands, Timothy D.; Yang, Peidong; Mao, Samuel S.; Russo, Richard E.; Feick, Henning; Weber, Eicke R.; Kind, Hannes; Huang, Michael; Yan, Haoquan; Wu, Yiying; Fan, Rong

2010-11-16

One-dimensional nanostructures having uniform diameters of less than approximately 200 nm. These inventive nanostructures, which we refer to as "nanowires", include single-crystalline homostructures as well as heterostructures of at least two single-crystalline materials having different chemical compositions. Because single-crystalline materials are used to form the heterostructure, the resultant heterostructure will be single-crystalline as well. The nanowire heterostructures are generally based on a semiconducting wire wherein the doping and composition are controlled in either the longitudinal or radial directions, or in both directions, to yield a wire that comprises different materials. Examples of resulting nanowire heterostructures include a longitudinal heterostructure nanowire (LOHN) and a coaxial heterostructure nanowire (COHN).

Methods of fabricating nanostructures and nanowires and devices fabricated therefrom

DOEpatents

Majumdar, Arun; Shakouri, Ali; Sands, Timothy D.; Yang, Peidong; Mao, Samuel S.; Russo, Richard E.; Feick, Henning; Weber, Eicke R.; Kind, Hannes; Huang, Michael; Yan, Haoquan; Wu, Yiying; Fan, Rong

2018-01-30

One-dimensional nanostructures having uniform diameters of less than approximately 200 nm. These inventive nanostructures, which we refer to as "nanowires", include single-crystalline homostructures as well as heterostructures of at least two single-crystalline materials having different chemical compositions. Because single-crystalline materials are used to form the heterostructure, the resultant heterostructure will be single-crystalline as well. The nanowire heterostructures are generally based on a semiconducting wire wherein the doping and composition are controlled in either the longitudinal or radial directions, or in both directions, to yield a wire that comprises different materials. Examples of resulting nanowire heterostructures include a longitudinal heterostructure nanowire (LOHN) and a coaxial heterostructure nanowire (COHN).

Impurity-induced disorder in III-nitride materials and devices

DOEpatents

Wierer, Jr., Jonathan J; Allerman, Andrew A

2014-11-25

A method for impurity-induced disordering in III-nitride materials comprises growing a III-nitride heterostructure at a growth temperature and doping the heterostructure layers with a dopant during or after the growth of the heterostructure and post-growth annealing of the heterostructure. The post-growth annealing temperature can be sufficiently high to induce disorder of the heterostructure layer interfaces.

Numerical analysis of high-power broad-area laser diode with improved heat sinking structure using epitaxial liftoff technique

NASA Astrophysics Data System (ADS)

Kim, Younghyun; Sung, Yunsu; Yang, Jung-Tack; Choi, Woo-Young

2018-02-01

The characteristics of high-power broad-area laser diodes with the improved heat sinking structure are numerically analyzed by a technology computer-aided design based self-consistent electro-thermal-optical simulation. The high-power laser diodes consist of a separate confinement heterostructure of a compressively strained InGaAsP quantum well and GaInP optical cavity layers, and a 100-μm-wide rib and a 2000-μm long cavity. In order to overcome the performance deteriorations of high-power laser diodes caused by self-heating such as thermal rollover and thermal blooming, we propose the high-power broad-area laser diode with improved heat-sinking structure, which another effective heat-sinking path toward the substrate side is added by removing a bulk substrate. It is possible to obtain by removing a 400-μm-thick GaAs substrate with an AlAs sacrificial layer utilizing well-known epitaxial liftoff techniques. In this study, we present the performance improvement of the high-power laser diode with the heat-sinking structure by suppressing thermal effects. It is found that the lateral far-field angle as well as quantum well temperature is expected to be improved by the proposed heat-sinking structure which is required for high beam quality and optical output power, respectively.

Growth control of oxygen stoichiometry in homoepitaxial SrTiO 3 films by pulsed laser epitaxy in high vacuum

DOE PAGES

Lee, Ho Nyung; Ambrose Seo, Sung S.; Choi, Woo Seok; ...

2016-01-29

In many transition metal oxides, oxygen stoichiometry is one of the most critical parameters that plays a key role in determining the structural, physical, optical, and electrochemical properties of the material. However, controlling the growth to obtain high quality single crystal films having the right oxygen stoichiometry, especially in a high vacuum environment, has been viewed as a challenge. In this work, we show that, through proper control of the plume kinetic energy, stoichiometric crystalline films can be synthesized without generating oxygen defects even in high vacuum. We use a model homoepitaxial system of SrTiO 3 (STO) thin films onmore » single crystal STO substrates. Physical property measurements indicate that oxygen vacancy generation in high vacuum is strongly influenced by the energetics of the laser plume, and it can be controlled by proper laser beam delivery. Thus, our finding not only provides essential insight into oxygen stoichiometry control in high vacuum for understanding the fundamental properties of STO-based thin films and heterostructures, but it expands the utility of pulsed laser epitaxy of other materials as well.₃« less

Advanced development of Pb-salt semiconductor lasers for the 8.0 to 15.0 micrometer spectral region

NASA Technical Reports Server (NTRS)

Linden, K. J.; Butler, J. F.; Nill, K. W.

1977-01-01

The technology was studied for producing Pb-salt diode lasers for the 8-51 micron spectral region suitable for use as local oscillators in a passive Laser Heterodyne Spectrometer (LHS). Consideration was given to long range NASA plans for the utilization of the passive LHS in a space shuttle environment. The general approach was to further develop the method of compositional interdiffusion (CID) recently reported, and used successfully at shorter wavelength. This technology was shown to provide an effective and reproducible method of producing a single-heterostructure (SH) diode of either the heterojunction or single-sided configuration. Performance specifications were exceeded in several devices, with single-ended CW power outputs as high as 0.88 milliwatts in a mode being achieved. The majority of the CID lasers fabricated had CW operating temperatures of over 60K; 30% of them operated CW above the boiling temperature of liquid nitrogen. CW operation above liquid nitrogen temperature was possible for wavelengths as long as 10.3 microns. Operation at 77K is significant with respect to space shuttle operations since its allows considerable simplification of cooling method.

Influence of template properties and quantum well number on stimulated emission from Al0.7Ga0.3N/Al0.8Ga0.2N quantum wells

NASA Astrophysics Data System (ADS)

Jeschke, J.; Martens, M.; Hagedorn, S.; Knauer, A.; Mogilatenko, A.; Wenzel, H.; Zeimer, U.; Enslin, J.; Wernicke, T.; Kneissl, M.; Weyers, M.

2018-03-01

AlGaN multiple quantum well laser heterostructures for emission around 240 nm have been grown by metalorganic vapor phase epitaxy on epitaxially laterally overgrown (ELO) AlN/sapphire templates. The edge emitting laser structures showed optically pumped lasing with threshold power densities in the range of 2 MW cm-2. The offcut angle of the sapphire substrates as well as the number and the width of the quantum wells were varied while keeping the total thickness of the gain region constant. A larger offcut angle of 0.2° leads to step bunching on the surface as well as Ga accumulation at the steps, but also to an increased inclination of threading dislocations and coalescence boundaries resulting in a reduced dislocation density and thus a reduced laser threshold in comparison to lasers grown on ELO with an offcut of 0.1°. For low losses, samples with fewer QWs exhibited a lower lasing threshold due to a reduced transparency pump power density while for high losses, caused by a higher threading dislocation density, the quadruple quantum well was favorable due to its higher maximum gain.

Al 1s-2p absorption spectroscopy of shock-wave heating and compression in laser-driven planar foil

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sawada, H.; Regan, S. P.; Radha, P. B.

Time-resolved Al 1s-2p absorption spectroscopy is used to diagnose direct-drive, shock-wave heating and compression of planar targets having nearly Fermi-degenerate plasma conditions (T{sub e}{approx}10-40 eV, {rho}{approx}3-11 g/cm{sup 3}) on the OMEGA Laser System [T. R. Boehly et al., Opt. Commun. 133, 495 (1997)]. A planar plastic foil with a buried Al tracer layer was irradiated with peak intensities of 10{sup 14}-10{sup 15} W/cm{sup 2} and probed with the pseudocontinuum M-band emission from a point-source Sm backlighter in the range of 1.4-1.7 keV. The laser ablation process launches 10-70 Mbar shock waves into the CH/Al/CH target. The Al 1s-2p absorption spectramore » were analyzed using the atomic physic code PRISMSPECT to infer T{sub e} and {rho} in the Al layer, assuming uniform plasma conditions during shock-wave heating, and to determine when the heat front penetrated the Al layer. The drive foils were simulated with the one-dimensional hydrodynamics code LILAC using a flux-limited (f=0.06 and f=0.1) and nonlocal thermal-transport model [V. N. Goncharov et al., Phys. Plasmas 13, 012702 (2006)]. The predictions of simulated shock-wave heating and the timing of heat-front penetration are compared to the observations. The experimental results for a wide variety of laser-drive conditions and buried depths have shown that the LILAC predictions using f=0.06 and the nonlocal model accurately model the shock-wave heating and timing of the heat-front penetration while the shock is transiting the target. The observed discrepancy between the measured and simulated shock-wave heating at late times of the drive can be explained by the reduced radiative heating due to lateral heat flow in the corona.« less

Al 1s-2p Absorption Spectroscopy of Shock-Wave Heating and Compression in Laser-Driven Planar Foil

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sawada, H.; Regan, S.P.; Radha, P.B.

Time-resolved Al 1s-2p absorption spectroscopy is used to diagnose direct-drive, shock-wave heating and compression of planar targets having nearly Fermi-degenerate plasma conditions (Te ~ 10–40 eV, rho ~ 3–11 g/cm^3) on the OMEGA Laser System [T. R. Boehly et al., Opt. Commun. 133, 495 (1997)]. A planar plastic foil with a buried Al tracer layer was irradiated with peak intensities of 10^14–10^15 W/cm^2 and probed with the pseudocontinuum M-band emission from a point-source Sm backlighter in the range of 1.4–1.7 keV. The laser ablation process launches 10–70 Mbar shock waves into the CH/Al/CH target. The Al 1s-2p absorption spectra weremore » analyzed using the atomic physic code PRISMSPECT to infer Te and rho in the Al layer, assuming uniform plasma conditions during shock-wave heating, and to determine when the heat front penetrated the Al layer. The drive foils were simulated with the one-dimensional hydrodynamics code LILAC using a flux-limited (f =0.06 and f =0.1) and nonlocal thermal-transport model [V. N. Goncharov et al., Phys. Plasmas 13, 012702 (2006)]. The predictions of simulated shock-wave heating and the timing of heat-front penetration are compared to the observations. The experimental results for a wide variety of laser-drive conditions and buried depths have shown that the LILAC predictions using f = 0.06 and the nonlocal model accurately model the shock-wave heating and timing of the heat-front penetration while the shock is transiting the target. The observed discrepancy between the measured and simulated shock-wave heating at late times of the drive can be explained by the reduced radiative heating due to lateral heat flow in the corona.« less

High power laser source for atom cooling based on reliable telecoms technology with all fibre frequency stabilisation

NASA Astrophysics Data System (ADS)

Legg, Thomas; Farries, Mark

2017-02-01

Cold atom interferometers are emerging as important tools for metrology. Designed into gravimeters they can measure extremely small changes in the local gravitational field strength and be used for underground surveying to detect buried utilities, mineshafts and sinkholes prior to civil works. To create a cold atom interferometer narrow linewidth, frequency stabilised lasers are required to cool the atoms and to setup and measure the atom interferometer. These lasers are commonly either GaAs diodes, Ti Sapphire lasers or frequency doubled InGaAsP diodes and fibre lasers. The InGaAsP DFB lasers are attractive because they are very reliable, mass-produced, frequency controlled by injection current and simply amplified to high powers with fibre amplifiers. In this paper a laser system suitable for Rb atom cooling, based on a 1560nm DFB laser and erbium doped fibre amplifier, is described. The laser output is frequency doubled with fibre coupled periodically poled LiNbO3 to a wavelength of 780nm. The output power exceeds 1 W at 780nm. The laser is stabilised at 1560nm against a fibre Bragg resonator that is passively temperature compensated. Frequency tuning over a range of 1 GHz is achieved by locking the laser to sidebands of the resonator that are generated by a phase modulator. This laser design is attractive for field deployable rugged systems because it uses all fibre coupled components with long term proven reliability.

Chemical changes in carbon Nanotube-Nickel/Nickel Oxide Core/Shell nanoparticle heterostructures treated at high temperatures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chopra, Nitin, E-mail: nchopra@eng.ua.edu; McWhinney, Hylton G.; Shi Wenwu

2011-06-15

Heterostructures composed of carbon nanotube (CNT) coated with Ni/NiO core/shell nanoparticles (denoted as CNC heterostructures) were synthesized in a wet-chemistry and single-step synthesis route involving direct nucleation of nanoparticles on CNT surface. Two different aspects of CNC heterostructures were studied here. First, it was observed that the nanoparticle coatings were more uniform on the as-produced and non-purified CNTs compared to purified (or acid treated) CNTs. These heterostructures were characterized using electron microscopy, Raman spectroscopy, and energy dispersive spectroscopy. Second, thermal stability of CNC heterostructures was studied by annealing them in N{sub 2}-rich (O{sub 2}-lean) environment between 125 and 750 deg.more » C for 1 h. A detailed X-ray photoelectron spectroscopy and Raman spectroscopy analysis was performed to evaluate the effects of annealing temperatures on chemical composition, phases, and stability of the heterostructures. It was observed that the CNTs present in the heterostructures completely decomposed and core Ni nanoparticle oxidized significantly between 600 and 750 deg. C. - Research Highlights: {yields} Heterostructures composed of CNTs coated with Ni/NiO core/shell nanoparticles. {yields} Poor nanoparticle coverage on purified CNT surface compared to non-purified CNTs. {yields} CNTs in heterostructures decompose between 600 and 750 deg. C in N{sub 2}-rich atmosphere. {yields} Metallic species in heterostructures were oxidized at higher temperatures.« less

Studies on the InAlN/InGaN/InAlN/InGaN double channel heterostructures with low sheet resistance

NASA Astrophysics Data System (ADS)

Zhang, Yachao; Wang, Zhizhe; Xu, Shengrui; Chen, Dazheng; Bao, Weimin; Zhang, Jinfeng; Zhang, Jincheng; Hao, Yue

2017-11-01

High quality InAlN/InGaN/InAlN/InGaN double channel heterostructures were proposed and grown by metal organic chemical vapor deposition. Benefiting from the adoption of the pulsed growth method and Two-Step AlN interlayer, the material quality and interface characteristics of the double channel heterostructures are satisfactory. The results of the temperature-dependent Hall effect measurement indicated that the transport properties of the double channel heterostructures were superior to those of the traditional single channel heterostructures in the whole test temperature range. Meanwhile, the sheet resistance of the double channel heterostructures reached 218.5 Ω/□ at 300 K, which is the record of InGaN-based heterostructures. The good transport properties of the InGaN double channel heterostructures are beneficial to improve the performance of the microwave power devices based on nitride semiconductors.

Diamond photonics platform enabled by femtosecond laser writing

PubMed Central

Sotillo, Belén; Bharadwaj, Vibhav; Hadden, J. P.; Sakakura, Masaaki; Chiappini, Andrea; Fernandez, Toney Teddy; Longhi, Stefano; Jedrkiewicz, Ottavia; Shimotsuma, Yasuhiko; Criante, Luigino; Osellame, Roberto; Galzerano, Gianluca; Ferrari, Maurizio; Miura, Kiyotaka; Ramponi, Roberta; Barclay, Paul E.; Eaton, Shane Michael

2016-01-01

Diamond is a promising platform for sensing and quantum processing owing to the remarkable properties of the nitrogen-vacancy (NV) impurity. The electrons of the NV center, largely localized at the vacancy site, combine to form a spin triplet, which can be polarized with 532 nm laser light, even at room temperature. The NV’s states are isolated from environmental perturbations making their spin coherence comparable to trapped ions. An important breakthrough would be in connecting, using waveguides, multiple diamond NVs together optically. However, still lacking is an efficient photonic fabrication method for diamond akin to the photolithographic methods that have revolutionized silicon photonics. Here, we report the first demonstration of three dimensional buried optical waveguides in diamond, inscribed by focused femtosecond high repetition rate laser pulses. Within the waveguides, high quality NV properties are observed, making them promising for integrated magnetometer or quantum information systems on a diamond chip. PMID:27748428

Ultralow bias power all-optical photonic crystal memory realized with systematically tuned L3 nanocavity

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kuramochi, Eiichi, E-mail: kuramochi.eiichi@lab.ntt.co.jp; Nozaki, Kengo; Shinya, Akihiko

2015-11-30

An InP photonic crystal nanocavity with an embedded InGaAsP active region is a unique technology that has realized an all-optical memory with a sub-micro-watt operating power and limitless storage time. In this study, we employed an L3 design with systematic multi-hole tuning, which realized a higher loaded Q factor (>40 000) and a lower mode volume (0.9 μm{sup 3}) than a line-defect-based buried-heterostructure nanocavity (16 000 and 2.2 μm{sup 3}). Excluding the active region realized a record loaded Q factor (210 000) in all for InP-based nanocavities. The minimum bias power for bistable memory operation was reduced to 2.3 ± 0.3 nW, which is about 1/10 ofmore » the previous record of 30 nW. This work further established the capability of a bistable nanocavity memory for use in future ultralow-power-consumption on-chip integrated photonics.« less

Atomic layer MoS2-graphene van der Waals heterostructure nanomechanical resonators.

PubMed

Ye, Fan; Lee, Jaesung; Feng, Philip X-L

2017-11-30

Heterostructures play significant roles in modern semiconductor devices and micro/nanosystems in a plethora of applications in electronics, optoelectronics, and transducers. While state-of-the-art heterostructures often involve stacks of crystalline epi-layers each down to a few nanometers thick, the intriguing limit would be hetero-atomic-layer structures. Here we report the first experimental demonstration of freestanding van der Waals heterostructures and their functional nanomechanical devices. By stacking single-layer (1L) MoS 2 on top of suspended single-, bi-, tri- and four-layer (1L to 4L) graphene sheets, we realize an array of MoS 2 -graphene heterostructures with varying thickness and size. These heterostructures all exhibit robust nanomechanical resonances in the very high frequency (VHF) band (up to ∼100 MHz). We observe that fundamental-mode resonance frequencies of the heterostructure devices fall between the values of graphene and MoS 2 devices. Quality (Q) factors of heterostructure resonators are lower than those of graphene but comparable to those of MoS 2 devices, suggesting interface damping related to interlayer interactions in the van der Waals heterostructures. This study validates suspended atomic layer heterostructures as an effective device platform and provides opportunities for exploiting mechanically coupled effects and interlayer interactions in such devices.

Magneto-transport in LaTi1-xMnxO3/SrTiO3 oxide heterostructures

NASA Astrophysics Data System (ADS)

Kumar, Pramod; Dogra, Anjana; Budhani, R. C.

2014-04-01

We report the growth of ultrathin film of Mn doped LaTiO3 on TiO2 terminated SrTiO3 (001) substrate by pulsed laser deposition (PLD) and their electrical transport characteristics including magnetoresistance (MR). Though the replacement of Mn in LaTiO3 at the Ti site in dilute limit does not affect the metallic behaviour of films but variation in resistance is observed. Normalised resistance behaviour is explained on the basis of variation in charge carriers and increased interaction between Mn atoms in the system under investigation.

Optical pumping of electron and nuclear spin in a negatively-charged quantum dot

NASA Astrophysics Data System (ADS)

Bracker, Allan; Gershoni, David; Korenev, Vladimir

2005-03-01

We report optical pumping of electron and nuclear spins in an individual negatively-charged quantum dot. With a bias-controlled heterostructure, we inject one electron into the quantum dot. Intense laser excitation produces negative photoluminescence polarization, which is easily erased by the Hanle effect, demonstrating optical pumping of a long-lived resident electron. The electron spin lifetime is consistent with the influence of nuclear spin fluctuations. Measuring the Overhauser effect in high magnetic fields, we observe a high degree of nuclear spin polarization, which is closely correlated to electron spin pumping.

Erbium Doped Quantum Dot and Si:O and Plasmon Resonance Enabled Quantum Dot Nanoscale Lasers

DTIC Science & Technology

2009-08-31

electroluminescence has to be coupled with a high-Q cavity for lasing. Alq3 PEDOT:PSS ITO — • MEHPPV +PbSe QDs . • •A iz^————— Gold (Au...PEDOT:PSS on the ITO anode and Alq3 /Ca/Al cathode. The inset is a SEM image of the L3 defect photonic crystal microcavity in silicon. Outer air holes at...consisting of tris(8-hydroxyquinoline)aluminum ( Alq3 ), calcium, and aluminum. The device heterostructure is schematically shown in Fig. 5(a). The ITO

Electronic properties of ZnPSe3-MoS2 Van der Waals heterostructure

NASA Astrophysics Data System (ADS)

Sharma, Munish; Kumar, Ashok; Ahluwalia, P. K.

2018-04-01

We present a comparative study of electronic properties of ZnPSe3-MoS2 heterostructure using GGA-PBE functional and DFT-D2 method within the framework of density functional theory (DFT). Electronic band structure for the considered heterostructure shows a direct band gap semiconducting character. A decrease in band gap is observed with the heterostructuring as compared to their constituent pristine monolayers. The alignment of valance band maxima and conduction band minima on different layers in heterostructure indicate the physical separation of charge carriers. A work function of 5.31 eV has been calculated for ZnPSe3-MoS2 heterostructure. These results provide a physical basis for the potential applications of these ZnPSe3-MoS2 heterostructure in optoelectronic devices.

InAs based terahertz quantum cascade lasers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Brandstetter, Martin, E-mail: martin.brandstetter@tuwien.ac.at; Kainz, Martin A.; Krall, Michael

2016-01-04

We demonstrate terahertz lasing emission from a quantum cascade structure, realized with InAs/AlAs{sub 0.16}Sb{sub 0.84} heterostructures. Due to the lower effective electron mass, InAs based active regions are expected to provide a higher optical gain compared to structures consisting of GaAs or InGaAs. The growth by molecular beam epitaxy enabled the fabrication of monolayer-thick barriers, required for the active region, which is based on a 3-well resonant phonon depletion design. Devices were processed in a double-metal waveguide geometry to ensure high mode confinement and low optical losses. Lasing emission at 3.8 THz was observed at liquid helium temperatures by applyingmore » a magnetic field perpendicular to the layered structure in order to suppress parasitic scattering channels. These results demonstrate the feasibility of InAs based active regions for terahertz quantum cascade lasers, potentially enabling higher operating temperatures.« less

Two-dimensional GaSe/MoSe 2 misfit bilayer heterojunctions by van der Waals epitaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Xufan; Lin, Ming-Wei; Lin, Junhao

Two-dimensional (2D) heterostructures hold the promise for future atomically-thin electronics and optoelectronics due to their diverse functionalities. While heterostructures consisting of different transition metal dichacolgenide monolayers with well-matched lattices and novel physical properties have been successfully fabricated via van der Waals (vdW) or edge epitaxy, constructing heterostructures from monolayers of layered semiconductors with large lattice misfits still remains challenging. Here, we report the growth of monolayer GaSe/MoSe 2 heterostructures with large lattice misfit by two-step chemical vapor deposition (CVD). Both vertically stacked and lateral heterostructures are demonstrated. The vertically stacked GaSe/MoSe 2 heterostructures exhibit vdW epitaxy with well-aligned lattice orientationmore » between the two layers, forming an incommensurate vdW heterostructure. However, the lateral heterostructures exhibit no lateral epitaxial alignment at the interface between GaSe and MoSe 2 crystalline domains. Instead of a direct lateral connection at the boundary region where the same lattice orientation is observed between GaSe and MoSe 2 monolayer domains in lateral GaSe/MoSe 2 heterostructures, GaSe monolayers are found to overgrow MoSe 2 during CVD, forming a stripe of vertically stacked vdW heterostructure at the crystal interface. Such vertically-stacked vdW GaSe/MoSe 2 heterostructures are shown to form p-n junctions with effective transport and separation of photo-generated charge carriers between layers, resulting in a gate-tunable photovoltaic response. In conclusion, these GaSe/MoSe 2 vdW heterostructures should have applications as gate-tunable field-effect transistors, photodetectors, and solar cells.« less

Two-dimensional GaSe/MoSe 2 misfit bilayer heterojunctions by van der Waals epitaxy

DOE PAGES

Li, Xufan; Lin, Ming-Wei; Lin, Junhao; ...

2016-04-01

Two-dimensional (2D) heterostructures hold the promise for future atomically-thin electronics and optoelectronics due to their diverse functionalities. While heterostructures consisting of different transition metal dichacolgenide monolayers with well-matched lattices and novel physical properties have been successfully fabricated via van der Waals (vdW) or edge epitaxy, constructing heterostructures from monolayers of layered semiconductors with large lattice misfits still remains challenging. Here, we report the growth of monolayer GaSe/MoSe 2 heterostructures with large lattice misfit by two-step chemical vapor deposition (CVD). Both vertically stacked and lateral heterostructures are demonstrated. The vertically stacked GaSe/MoSe 2 heterostructures exhibit vdW epitaxy with well-aligned lattice orientationmore » between the two layers, forming an incommensurate vdW heterostructure. However, the lateral heterostructures exhibit no lateral epitaxial alignment at the interface between GaSe and MoSe 2 crystalline domains. Instead of a direct lateral connection at the boundary region where the same lattice orientation is observed between GaSe and MoSe 2 monolayer domains in lateral GaSe/MoSe 2 heterostructures, GaSe monolayers are found to overgrow MoSe 2 during CVD, forming a stripe of vertically stacked vdW heterostructure at the crystal interface. Such vertically-stacked vdW GaSe/MoSe 2 heterostructures are shown to form p-n junctions with effective transport and separation of photo-generated charge carriers between layers, resulting in a gate-tunable photovoltaic response. In conclusion, these GaSe/MoSe 2 vdW heterostructures should have applications as gate-tunable field-effect transistors, photodetectors, and solar cells.« less

Canadian Semiconductor Technology Conference, 6th, Ottawa, Canada, Aug. 11-13, 1992, Proceedings

NASA Astrophysics Data System (ADS)

Baribeau, Jean-Marc

1992-11-01

This volume contains papers on the growth efficiency and distribution coefficient of GaInP-InP epilayers and heterostructures, X-ray photoelectron spectroscopy studies of Ge epilayers on Si(100), and mechanical properties of silicon carbide films for X-ray lithography application. Attention is also given to fine structure in Raman spectroscopy and X-ray reflectometry and its uses for the characterization of superlattices, phase formation in Fe-Si thin-film diffusion couples, process optimization for a micromachined silicon nonreverse valve, and a numerical study of heat transport in thermally isolated flow-rate microsensors. Particular consideration is given to a versatile 2D model for InGaAsP quantum-well semiconductor lasers, gallium arsenide electronics in the marketplace, and optical channel grading in p-type Si/SiGe MOSFETs. Other papers are on ultrafast electron tunneling in a reverse-biased high-efficiency quantum well laser structure, excess currents as a result of trap-assisted tunneling in double-barrier resonant tunneling diodes, and carrier lifetimes in strained InGaAsP multiple quantum-well laser structures.

Tin monochalcogenide heterostructures as mechanically rigid infrared band gap semiconductors

NASA Astrophysics Data System (ADS)

Özçelik, V. Ongun; Fathi, Mohammad; Azadani, Javad G.; Low, Tony

2018-05-01

Based on first-principles density functional calculations, we show that SnS and SnSe layers can form mechanically rigid heterostructures with the constituent puckered or buckled monolayers. Due to the strong interlayer coupling, the electronic wave functions of the conduction and valence band edges are delocalized across the heterostructure. The resultant band gaps of the heterostructures reside in the infrared region. With strain engineering, the heterostructure band gap undergoes a transition from indirect to direct in the puckered phase. Our results show that there is a direct correlation between the electronic wave function and the mechanical rigidity of the layered heterostructure.

Two-dimensional GaSe/MoSe2 misfit bilayer heterojunctions by van der Waals epitaxy.

PubMed

Li, Xufan; Lin, Ming-Wei; Lin, Junhao; Huang, Bing; Puretzky, Alexander A; Ma, Cheng; Wang, Kai; Zhou, Wu; Pantelides, Sokrates T; Chi, Miaofang; Kravchenko, Ivan; Fowlkes, Jason; Rouleau, Christopher M; Geohegan, David B; Xiao, Kai

2016-04-01

Two-dimensional (2D) heterostructures hold the promise for future atomically thin electronics and optoelectronics because of their diverse functionalities. Although heterostructures consisting of different 2D materials with well-matched lattices and novel physical properties have been successfully fabricated via van der Waals (vdW) epitaxy, constructing heterostructures from layered semiconductors with large lattice misfits remains challenging. We report the growth of 2D GaSe/MoSe2 heterostructures with a large lattice misfit using two-step chemical vapor deposition (CVD). Both vertically stacked and lateral heterostructures are demonstrated. The vertically stacked GaSe/MoSe2 heterostructures exhibit vdW epitaxy with well-aligned lattice orientation between the two layers, forming a periodic superlattice. However, the lateral heterostructures exhibit no lateral epitaxial alignment at the interface between GaSe and MoSe2 crystalline domains. Instead of a direct lateral connection at the boundary region where the same lattice orientation is observed between GaSe and MoSe2 monolayer domains in lateral GaSe/MoSe2 heterostructures, GaSe monolayers are found to overgrow MoSe2 during CVD, forming a stripe of vertically stacked vdW heterostructures at the crystal interface. Such vertically stacked vdW GaSe/MoSe2 heterostructures are shown to form p-n junctions with effective transport and separation of photogenerated charge carriers between layers, resulting in a gate-tunable photovoltaic response. These GaSe/MoSe2 vdW heterostructures should have applications as gate-tunable field-effect transistors, photodetectors, and solar cells.

Two-dimensional GaSe/MoSe2 misfit bilayer heterojunctions by van der Waals epitaxy

PubMed Central

Li, Xufan; Lin, Ming-Wei; Lin, Junhao; Huang, Bing; Puretzky, Alexander A.; Ma, Cheng; Wang, Kai; Zhou, Wu; Pantelides, Sokrates T.; Chi, Miaofang; Kravchenko, Ivan; Fowlkes, Jason; Rouleau, Christopher M.; Geohegan, David B.; Xiao, Kai

2016-01-01

Two-dimensional (2D) heterostructures hold the promise for future atomically thin electronics and optoelectronics because of their diverse functionalities. Although heterostructures consisting of different 2D materials with well-matched lattices and novel physical properties have been successfully fabricated via van der Waals (vdW) epitaxy, constructing heterostructures from layered semiconductors with large lattice misfits remains challenging. We report the growth of 2D GaSe/MoSe2 heterostructures with a large lattice misfit using two-step chemical vapor deposition (CVD). Both vertically stacked and lateral heterostructures are demonstrated. The vertically stacked GaSe/MoSe2 heterostructures exhibit vdW epitaxy with well-aligned lattice orientation between the two layers, forming a periodic superlattice. However, the lateral heterostructures exhibit no lateral epitaxial alignment at the interface between GaSe and MoSe2 crystalline domains. Instead of a direct lateral connection at the boundary region where the same lattice orientation is observed between GaSe and MoSe2 monolayer domains in lateral GaSe/MoSe2 heterostructures, GaSe monolayers are found to overgrow MoSe2 during CVD, forming a stripe of vertically stacked vdW heterostructures at the crystal interface. Such vertically stacked vdW GaSe/MoSe2 heterostructures are shown to form p-n junctions with effective transport and separation of photogenerated charge carriers between layers, resulting in a gate-tunable photovoltaic response. These GaSe/MoSe2 vdW heterostructures should have applications as gate-tunable field-effect transistors, photodetectors, and solar cells. PMID:27152356

Determination of interfacial states in solid heterostructures using a variable-energy positron beam

DOEpatents

Asoka kumar, Palakkal P. V.; Lynn, Kelvin G.

1993-01-01

A method and means is provided for characterizing interfacial electron states in solid heterostructures using a variable energy positron beam to probe the solid heterostructure. The method includes the steps of directing a positron beam having a selected energy level at a point on the solid heterostructure so that the positron beam penetrates into the solid heterostructure and causes positrons to collide with the electrons at an interface of the solid heterostructure. The number and energy of gamma rays emitted from the solid heterostructure as a result of the annihilation of positrons with electrons at the interface are detected. The data is quantified as a function of the Doppler broadening of the photopeak about the 511 keV line created by the annihilation of the positrons and electrons at the interface, preferably, as an S-parameter function; and a normalized S-parameter function of the data is obtained. The function of data obtained is compared with a corresponding function of the Doppler broadening of the annihilation photopeak about 511 keV for a positron beam having a second energy level directed at the same material making up a portion of the solid heterostructure. The comparison of these functions facilitates characterization of the interfacial states of electrons in the solid heterostructure at points corresponding to the penetration of positrons having the particular energy levels into the interface of the solid heterostructure. Accordingly, the invention provides a variable-energy non-destructive probe of solid heterostructures, such as SiO.sub.2 /Si, MOS or other semiconductor devices.

Determination of interfacial states in solid heterostructures using a variable-energy positron beam

DOEpatents

Asokakumar, P.P.V.; Lynn, K.G.

1993-04-06

A method and means is provided for characterizing interfacial electron states in solid heterostructures using a variable energy positron beam to probe the solid heterostructure. The method includes the steps of directing a positron beam having a selected energy level at a point on the solid heterostructure so that the positron beam penetrates into the solid heterostructure and causes positrons to collide with the electrons at an interface of the solid heterostructure. The number and energy of gamma rays emitted from the solid heterostructure as a result of the annihilation of positrons with electrons at the interface are detected. The data is quantified as a function of the Doppler broadening of the photopeak about the 511 keV line created by the annihilation of the positrons and electrons at the interface, preferably, as an S-parameter function; and a normalized S-parameter function of the data is obtained. The function of data obtained is compared with a corresponding function of the Doppler broadening of the annihilation photopeak about 511 keV for a positron beam having a second energy level directed at the same material making up a portion of the solid heterostructure. The comparison of these functions facilitates characterization of the interfacial states of electrons in the solid heterostructure at points corresponding to the penetration of positrons having the particular energy levels into the interface of the solid heterostructure. Accordingly, the invention provides a variable-energy non-destructive probe of solid heterostructures, such as SiO[sub 2]/Si, MOS or other semiconductor devices.

Nd:YAG laser combined with gold nanorods for potential application in port-wine stains: an in vivo study

NASA Astrophysics Data System (ADS)

Xing, Linzhuang; Chen, Bin; Li, Dong; Wu, Wenjuan; Wang, Guoxiang

2017-11-01

Neodymium:yttrium aluminum garnet (Nd:YAG) lasers exhibit considerable potential for treating deeply buried port-wine stains. However, the application of Nd:YAG laser is limited by its weak absorption to blood. This in vivo study tested the efficacy and safety of utilizing thiol-terminated methoxypolyethylene glycol-modified gold nanorods (PEG-GNRs) to enhance the absorption of Nd:YAG laser to blood. Mouse mesentery and dorsal skinfold chamber (DSC) model were prepared to analyze the thermal responses of a single venule without anatomic structures, as well as blood vessels in the complex structure of the skin, to laser light. After the injection of 0.44 mg of PEG-GNRs, the required threshold density of laser energy for blood coagulation and complete vasoconstriction decreased from 24 to 18 J/cm2 in the mesentery model and from 36 to 31 J/cm2 in the DSC model. The laser pulse required for blood coagulation and complete vasoconstriction decreased by 67.75% and 62.25% on average in the mesentery model and by 67.55% and 54.45% on average in the DSC model. Histological and histochemical results confirmed that PEG-GNRs are nontoxic in the entire mouse life span. Therefore, combining PEG-GNRs with Nd:YAG laser may be effective and safe for inducing an obvious thermal response of blood vessels under low energy density and minimal pulse conditions.

Using heterostructural alloying to tune the structure and properties of the thermoelectric Sn 1–xCa xSe

DOE Office of Scientific and Technical Information (OSTI.GOV)

Matthews, Bethany E.; Holder, Aaron M.; Schelhas, Laura T.

We grow and kinetically stabilize the isotropic rocksalt phase of SnSe thin films by alloying SnSe with CaSe. Thin polycrystalline films of the metastable heterostructural alloy Sn 1–xCa xSe are synthesized by pulsed laser deposition on amorphous SiO 2 over the entire composition range 0 < x < 1. We observe the theoretically-predicted, composition-driven change from a layered, orthorhombic structure to an isotropic, cubic structure near x = 0.18, in reasonable agreement with the theoretical value of x = 0.13 calculated from first principles. The optical band gap is highly non-linear in x and the trend agrees with theory predictions.more » Compared to the layered end-member SnSe, the isotropic alloy near the orthorhombic-to-rocksalt transition has a p-type electrical resistivity three orders of magnitude lower, and a thermoelectric power factor at least ten times larger. Furthermore manipulation of the structure of a functional material like SnSe via alloying may provide a new path to enhanced functionality, in this case, improved thermoelectric performance.« less

Interface Control of Ferroelectricity in an SrRuO3 /BaTiO3 /SrRuO3 Capacitor and its Critical Thickness.

PubMed

Shin, Yeong Jae; Kim, Yoonkoo; Kang, Sung-Jin; Nahm, Ho-Hyun; Murugavel, Pattukkannu; Kim, Jeong Rae; Cho, Myung Rae; Wang, Lingfei; Yang, Sang Mo; Yoon, Jong-Gul; Chung, Jin-Seok; Kim, Miyoung; Zhou, Hua; Chang, Seo Hyoung; Noh, Tae Won

2017-05-01

The atomic-scale synthesis of artificial oxide heterostructures offers new opportunities to create novel states that do not occur in nature. The main challenge related to synthesizing these structures is obtaining atomically sharp interfaces with designed termination sequences. In this study, it is demonstrated that the oxygen pressure (PO2) during growth plays an important role in controlling the interfacial terminations of SrRuO 3 /BaTiO 3 /SrRuO 3 (SRO/BTO/SRO) ferroelectric (FE) capacitors. The SRO/BTO/SRO heterostructures are grown by a pulsed laser deposition method. The top SRO/BTO interface, grown at high PO2 (around 150 mTorr), usually exhibits a mixture of RuO 2 -BaO and SrO-TiO 2 terminations. By reducing PO2, the authors obtain atomically sharp SRO/BTO top interfaces with uniform SrO-TiO 2 termination. Using capacitor devices with symmetric and uniform interfacial termination, it is demonstrated for the first time that the FE critical thickness can reach the theoretical limit of 3.5 unit cells. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Effect of low and staggered gap quantum wells inserted in GaAs tunnel junctions

NASA Astrophysics Data System (ADS)

Louarn, K.; Claveau, Y.; Marigo-Lombart, L.; Fontaine, C.; Arnoult, A.; Piquemal, F.; Bounouh, A.; Cavassilas, N.; Almuneau, G.

2018-04-01

In this article, we investigate the impact of the insertion of either a type I InGaAs or a type II InGaAs/GaAsSb quantum well on the performances of MBE-grown GaAs tunnel junctions (TJs). The devices are designed and simulated using a quantum transport model based on the non-equilibrium Green’s function formalism and a 6-band k.p Hamiltonian. We experimentally observe significant improvements of the peak tunneling current density on both heterostructures with a 460-fold increase for a moderately doped GaAs TJ when the InGaAs QW is inserted at the junction interface, and a 3-fold improvement on a highly doped GaAs TJ integrating a type II InGaAs/GaAsSb QW. Thus, the simple insertion of staggered band lineup heterostructures enables us to reach a tunneling current well above the kA cm‑2 range, equivalent to the best achieved results for Si-doped GaAs TJs, implying very interesting potential for TJ-based components, such as multi-junction solar cells, vertical cavity surface emitting lasers and tunnel-field effect transistors.

Strain Effects in Epitaxial VO2 Thin Films on Columnar Buffer-Layer TiO2/Al2O3 Virtual Substrates.

PubMed

Breckenfeld, Eric; Kim, Heungsoo; Burgess, Katherine; Charipar, Nicholas; Cheng, Shu-Fan; Stroud, Rhonda; Piqué, Alberto

2017-01-18

Epitaxial VO 2 /TiO 2 thin film heterostructures were grown on (100) (m-cut) Al 2 O 3 substrates via pulsed laser deposition. We have demonstrated the ability to reduce the semiconductor-metal transition (SMT) temperature of VO 2 to ∼44 °C while retaining a 4 order of magnitude SMT using the TiO 2 buffer layer. A combination of electrical transport and X-ray diffraction reciprocal space mapping studies help examine the specific strain states of VO 2 /TiO 2 /Al 2 O 3 heterostructures as a function of TiO 2 film growth temperatures. Atomic force microscopy and transmission electron microscopy analyses show that the columnar microstructure present in TiO 2 buffer films is responsible for the partially strained VO 2 film behavior and subsequently favorable transport characteristics with a lower SMT temperature. Such findings are of crucial importance for both the technological implementation of the VO 2 system, where reduction of its SMT temperature is widely sought, as well as the broader complex oxide community, where greater understanding of the evolution of microstructure, strain, and functional properties is a high priority.

Interface Control of Ferroelectricity in an SrRuO 3/BaTiO 3/SrRuO 3 Capacitor and its Critical Thickness

DOE PAGES

Shin, Yeong Jae; Kim, Yoonkoo; Kang, Sung -Jin; ...

2017-03-03

Here, the atomic-scale synthesis of artificial oxide heterostructures offers new opportunities to create novel states that do not occur in nature. The main challenge related to synthesizing these structures is obtaining atomically sharp interfaces with designed termination sequences. In this study, it is demonstrated that the oxygen pressure (P O2) during growth plays an important role in controlling the interfacial terminations of SrRuO 3/BaTiO 3/SrRuO 3 (SRO/BTO/SRO) ferroelectric (FE) capacitors. The SRO/BTO/SRO heterostructures are grown by a pulsed laser deposition method. The top SRO/BTO interface, grown at high P O2 (around 150 mTorr), usually exhibits a mixture of RuO 2-BaOmore » and SrO-TiO 2 terminations. By reducing P O2, the authors obtain atomically sharp SRO/BTO top interfaces with uniform SrO-TiO 2 termination. Using capacitor devices with symmetric and uniform interfacial termination, it is demonstrated for the first time that the FE critical thickness can reach the theoretical limit of 3.5 unit cells.« less

Using heterostructural alloying to tune the structure and properties of the thermoelectric Sn 1–xCa xSe

DOE PAGES

Matthews, Bethany E.; Holder, Aaron M.; Schelhas, Laura T.; ...

2017-07-21

We grow and kinetically stabilize the isotropic rocksalt phase of SnSe thin films by alloying SnSe with CaSe. Thin polycrystalline films of the metastable heterostructural alloy Sn 1–xCa xSe are synthesized by pulsed laser deposition on amorphous SiO 2 over the entire composition range 0 < x < 1. We observe the theoretically-predicted, composition-driven change from a layered, orthorhombic structure to an isotropic, cubic structure near x = 0.18, in reasonable agreement with the theoretical value of x = 0.13 calculated from first principles. The optical band gap is highly non-linear in x and the trend agrees with theory predictions.more » Compared to the layered end-member SnSe, the isotropic alloy near the orthorhombic-to-rocksalt transition has a p-type electrical resistivity three orders of magnitude lower, and a thermoelectric power factor at least ten times larger. Furthermore manipulation of the structure of a functional material like SnSe via alloying may provide a new path to enhanced functionality, in this case, improved thermoelectric performance.« less

Deep Ultraviolet Light Emitters Based on (Al,Ga)N/GaN Semiconductor Heterostructures

NASA Astrophysics Data System (ADS)

Liang, Yu-Han

Deep ultraviolet (UV) light sources are useful in a number of applications that include sterilization, medical diagnostics, as well as chemical and biological identification. However, state-of-the-art deep UV light-emitting diodes and lasers made from semiconductors still suffer from low external quantum efficiency and low output powers. These limitations make them costly and ineffective in a wide range of applications. Deep UV sources such as lasers that currently exist are prohibitively bulky, complicated, and expensive. This is typically because they are constituted of an assemblage of two to three other lasers in tandem to facilitate sequential harmonic generation that ultimately results in the desired deep UV wavelength. For semiconductor-based deep UV sources, the most challenging difficulty has been finding ways to optimally dope the (Al,Ga)N/GaN heterostructures essential for UV-C light sources. It has proven to be very difficult to achieve high free carrier concentrations and low resistivities in high-aluminum-containing III-nitrides. As a result, p-type doped aluminum-free III-nitrides are employed as the p-type contact layers in UV light-emitting diode structures. However, because of impedance-mismatch issues, light extraction from the device and consequently the overall external quantum efficiency is drastically reduced. This problem is compounded with high losses and low gain when one tries to make UV nitride lasers. In this thesis, we provide a robust and reproducible approach to resolving most of these challenges. By using a liquid-metal-enabled growth mode in a plasma-assisted molecular beam epitaxy process, we show that highly-doped aluminum containing III-nitride films can be achieved. This growth mode is driven by kinetics. Using this approach, we have been able to achieve extremely high p-type and n-type doping in (Al,Ga)N films with high aluminum content. By incorporating a very high density of Mg atoms in (Al,Ga)N films, we have been able to show, by temperature-dependent photoluminescence, that the activation energy of the acceptors is substantially lower, thus allowing a higher hole concentration than usual to be available for conduction. It is believed that the lower activation energy is a result of an impurity band tail induced by the high Mg concentration. The successful p-type doping of high aluminum-content (Al,Ga)N has allowed us to demonstrate operation of deep ultraviolet LEDs emitting at 274 nm. This achievement paves the way for making lasers that emit in the UV-C region of the spectrum. In this thesis, we performed preliminary work on using our structures to make UV-C lasers based on photonic crystal nanocavity structures. The nanocavity laser structures show that the threshold optical pumping power necessary to reach lasing is much lower than in conventional edge-emitting lasers. Furthermore, the photonic crystal nanocavity structure has a small mode volume and does not need mirrors for optical feedback. These advantages significantly reduce material loss and eliminate mirror loss. This structure therefore potentially opens the door to achieving efficient and compact lasers in the UV-C region of the spectrum.

Design of lateral heterostructure from arsenene and antimonene

NASA Astrophysics Data System (ADS)

Sun, Qilong; Dai, Ying; Ma, Yandong; Yin, Na; Wei, Wei; Yu, Lin; Huang, Baibiao

2016-09-01

Lateral heterostructures fabricated by two-dimensional building blocks have opened up exciting realms in material science and device physics. Identifying suitable materials for creating such heterostructures is urgently needed for the next-generation devices. Here, we demonstrate a novel type of seamless lateral heterostructures with excellent stabilities formed within pristine arsenene and antimonene. We find that these heterostructures could possess direct and reduced energy gaps without any modulations. Moreover, the highly coveted type-II alignment and the high carrier mobility are also identified, marking the enhanced quantum efficiency. The tensile strain can result in efficient bandgap engineering. Besides, the proposed critical condition for favored direct energy gaps would have a guiding significance on the subsequent works. Generally, our predictions not only introduce new vitality into lateral heterostructures, enriching available candidate materials in this field, but also highlight the potential of these lateral heterostructures as appealing materials for future devices.

Unifying ultrafast demagnetization and intrinsic Gilbert damping in Co/Ni bilayers with electronic relaxation near the Fermi surface

NASA Astrophysics Data System (ADS)

Zhang, Wei; He, Wei; Zhang, Xiang-Qun; Cheng, Zhao-Hua; Teng, Jiao; Fähnle, Manfred

2017-12-01

The ability to controllably manipulate the laser-induced ultrafast magnetic dynamics is a prerequisite for future high-speed spintronic devices. The optimization of devices requires the controllability of the ultrafast demagnetization time τM and intrinsic Gilbert damping αintr. In previous attempts to establish a relationship between τM and αintr, the rare-earth doping of a permalloy film with two different demagnetization mechanisms was not a suitable candidate. Here, we choose Co/Ni bilayers to investigate the relations between τM and αintr by means of the time-resolved magneto-optical Kerr effect (TR-MOKE) via adjusting the thickness of the Ni layers, and obtain an approximately proportional relation between these two parameters. The remarkable agreement between the TR-MOKE experiment and the prediction of a breathing Fermi-surface model confirms that a large Elliott-Yafet spin-mixing parameter b2 is relevant to the strong spin-orbital coupling at the Co/Ni interface. More importantly, a proportional relation between τM and αintr in such metallic films or heterostructures with electronic relaxation near the Fermi surface suggests the local spin-flip scattering dominates the mechanism of ultrafast demagnetization, otherwise the spin-current mechanism dominates. It is an effective method to distinguish the dominant contributions to ultrafast magnetic quenching in metallic heterostructures by simultaneously investigating both the ultrafast demagnetization time and Gilbert damping. Our work can open an avenue to manipulate the magnitude and efficiency of terahertz emission in metallic heterostructures such as perpendicular magnetic anisotropic Ta/Pt/Co/Ni/Pt/Ta multilayers, and then it has an immediate implication for the design of high-frequency spintronic devices.

Advancing three-dimensional MEMS by complimentary laser micro manufacturing

NASA Astrophysics Data System (ADS)

Palmer, Jeremy A.; Williams, John D.; Lemp, Tom; Lehecka, Tom M.; Medina, Francisco; Wicker, Ryan B.

2006-01-01

This paper describes improvements that enable engineers to create three-dimensional MEMS in a variety of materials. It also provides a means for selectively adding three-dimensional, high aspect ratio features to pre-existing PMMA micro molds for subsequent LIGA processing. This complimentary method involves in situ construction of three-dimensional micro molds in a stand-alone configuration or directly adjacent to features formed by x-ray lithography. Three-dimensional micro molds are created by micro stereolithography (MSL), an additive rapid prototyping technology. Alternatively, three-dimensional features may be added by direct femtosecond laser micro machining. Parameters for optimal femtosecond laser micro machining of PMMA at 800 nanometers are presented. The technical discussion also includes strategies for enhancements in the context of material selection and post-process surface finish. This approach may lead to practical, cost-effective 3-D MEMS with the surface finish and throughput advantages of x-ray lithography. Accurate three-dimensional metal microstructures are demonstrated. Challenges remain in process planning for micro stereolithography and development of buried features following femtosecond laser micro machining.

GaSb-based single-mode distributed feedback lasers for sensing (Conference Presentation)

NASA Astrophysics Data System (ADS)

Gupta, James A.; Bezinger, Andrew; Lapointe, Jean; Poitras, Daniel; Aers, Geof C.

2017-02-01

GaSb-based tunable single-mode diode lasers can enable rapid, highly-selective and highly-sensitive absorption spectroscopy systems for gas sensing. In this work, single-mode distributed feedback (DFB) laser diodes were developed for the detection of various trace gases in the 2-3.3um range, including CO2, CO, HF, H2S, H2O and CH4. The lasers were fabricated using an index-coupled grating process without epitaxial regrowth, making the process significantly less expensive than conventional DFB fabrication. The devices are based on InGaAsSb/AlGaAsSb separate confinement heterostructures grown on GaSb by molecular beam epitaxy. DFB lasers were produced using a two step etch process. Narrow ridge waveguides were first defined by optical lithography and etched into the semiconductor. Lateral gratings were then defined on both sides of the ridge using electron-beam lithography and etched to produce the index-grating. Effective index modeling was used to optimize the ridge width, etch depths and the grating pitch to ensure single-lateral-mode operation and adequate coupling strength. The effective index method was further used to simulate the DFB laser emission spectrum, based on a transfer matrix model for light transmission through the periodic structure. The fabricated lasers exhibit single-mode operation which is tunable through the absorption features of the various target gases by adjustment of the drive current. In addition to the established open-path sensing applications, these devices have great potential for optoelectronic integrated gas sensors, making use of integrated photodetectors and possibly on-chip Si photonics waveguide structures.

Fatigue degradation in compressively loaded composite laminates. [graphite-epoxy composites

NASA Technical Reports Server (NTRS)

Ramkumar, R. L.

1981-01-01

The effect of imbedded delaminations on the compression fatigue behavior of quasi-isotropic, T300/5208, graphite/epoxy laminates was investigated. Teflon imbedments were introduced during panel layup to create delaminations. Static and constant amplitude (R=10, omega = 10 Hz) fatigue tests were conducted. S-N data and half life residual strength data were obtained. During static compression loading, the maximum deflection of the buckled delaminated region was recorded. Under compression fatigue, growth of the imbedded delamination was identified as the predominant failure mode in most of the test cases. Specimens that exhibited others failures had a single low stiffness ply above the Teflon imbedment. Delamination growth during fatigue was monitored using DIB enhanced radiography. In specimens with buried delaminations, the dye penetrant (DIB) was introduced into the delaminated region through a minute laser drilled hole, using a hypodermic needle. A low kV, microfocus, X-ray unit was mounted near the test equipment to efficiently record the cyclic growth of buried delaminations on Polaroid film.

Strain-induced structural defects and their effects on the electrochemical performances of silicon core/germanium shell nanowire heterostructures

DOE PAGES

Lin, Yung-Chen; Kim, Dongheun; Li, Zhen; ...

2016-12-14

Here we report on strain-induced structural defect formation in core Si nanowire of Si/Ge core/shell nanowire heterostructure and influences of the structural defects on the electrochemical performances in lithium-ion battery anodes based on Si/Ge core/shell nanowire heterostructures. The induced structural defects consisting of stacking faults and dislocations in the core Si nanowire were observed for the first time. The generation of stacking faults in Si/Ge core/shell nanowire heterostructure is observed to prefer settling in either only Ge shell region or in both Ge shell and Si core regions and is associated with the increase of the shell volume fraction. Themore » relax of misfit strain in [112] oriented core/shell nanowire heterostructure leads to subsequent gliding of Shockley partial dislocations, preferentially forming the twins. The observation of cross-over defect formation is of great importance for the understanding of heteroepitaxy in radial heterostructures at nanoscale and building the three dimensional heterostructures for the various applications. In addition, the effect of the defect formation on nanomaterial’s functionality is investigated by electrochemical performance test. The Si/Ge core/shell nanowire heterostructures enhance the gravimetric capacity of lithium ion battery anodes under fast charging/discharging rates compared to Si nanowires. However, the induced structural defects hamper lithiation of the Si/Ge core/shell nanowire heterostructure.« less

Strain-induced structural defects and their effects on the electrochemical performances of silicon core/germanium shell nanowire heterostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lin, Yung-Chen; Kim, Dongheun; Li, Zhen

Here we report on strain-induced structural defect formation in core Si nanowire of Si/Ge core/shell nanowire heterostructure and influences of the structural defects on the electrochemical performances in lithium-ion battery anodes based on Si/Ge core/shell nanowire heterostructures. The induced structural defects consisting of stacking faults and dislocations in the core Si nanowire were observed for the first time. The generation of stacking faults in Si/Ge core/shell nanowire heterostructure is observed to prefer settling in either only Ge shell region or in both Ge shell and Si core regions and is associated with the increase of the shell volume fraction. Themore » relax of misfit strain in [112] oriented core/shell nanowire heterostructure leads to subsequent gliding of Shockley partial dislocations, preferentially forming the twins. The observation of cross-over defect formation is of great importance for the understanding of heteroepitaxy in radial heterostructures at nanoscale and building the three dimensional heterostructures for the various applications. In addition, the effect of the defect formation on nanomaterial’s functionality is investigated by electrochemical performance test. The Si/Ge core/shell nanowire heterostructures enhance the gravimetric capacity of lithium ion battery anodes under fast charging/discharging rates compared to Si nanowires. However, the induced structural defects hamper lithiation of the Si/Ge core/shell nanowire heterostructure.« less

Mechatronic description of a laser autoguided vehicle for greenhouse operations.

PubMed

Sánchez-Hermosilla, Julián; González, Ramón; Rodríguez, Francisco; Donaire, Julián G

2013-01-08

This paper presents a novel approach for guiding mobile robots inside greenhouses demonstrated by promising preliminary physical experiments. It represents a comprehensive attempt to use the successful principles of AGVs (auto-guided vehicles) inside greenhouses, but avoiding the necessity of modifying the crop layout, and avoiding having to bury metallic pipes in the greenhouse floor. The designed vehicle can operate different tools, e.g., a spray system for applying plant-protection product, a lifting platform to reach the top part of the plants to perform pruning and harvesting tasks, and a trailer to transport fruits, plants, and crop waste. Regarding autonomous navigation, it follows the idea of AGVs, but now laser emitters are used to mark the desired route. The vehicle development is analyzed from a mechatronic standpoint (mechanics, electronics, and autonomous control).

Long wavelength stimulated emission up to 9.5 μm from HgCdTe quantum well heterostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Morozov, S. V.; Rumyantsev, V. V., E-mail: rumyantsev@ipmras.ru; Dubinov, A. A.

2016-02-29

Stimulated emission from waveguide HgCdTe structures with several quantum wells inside waveguide core is demonstrated at wavelengths up to 9.5 μm. Photoluminescence line narrowing down to kT energy, as well as superlinear rise in its intensity evidence the onset of the stimulated emission, which takes place under optical pumping with intensity as small as ∼0.1 kW/cm{sup 2} at 18 K and 1 kW/cm{sup 2} at 80 K. One can conclude that HgCdTe structures potential for long-wavelength lasers is not exhausted.

Fitting by Orthonormal Polynomials of Silver Nanoparticles Spectroscopic Data

NASA Astrophysics Data System (ADS)

Bogdanova, Nina; Koleva, Mihaela

2018-02-01

Our original Orthonormal Polynomial Expansion Method (OPEM) in one-dimensional version is applied for first time to describe the silver nanoparticles (NPs) spectroscopic data. The weights for approximation include experimental errors in variables. In this way we construct orthonormal polynomial expansion for approximating the curve on a non equidistant point grid. The corridors of given data and criteria define the optimal behavior of searched curve. The most important subinterval of spectra data is investigated, where the minimum (surface plasmon resonance absorption) is looking for. This study describes the Ag nanoparticles produced by laser approach in a ZnO medium forming a AgNPs/ZnO nanocomposite heterostructure.

Terraced-heterostructure large-optical-cavity AlGaAs diode laser - A new type of high-power CW single-mode device

NASA Technical Reports Server (NTRS)

Botez, D.; Connolly, J. C.

1982-01-01

A new terraced lateral wave confining structure is obtained by liquid phase epitaxy over channeled substrates misoriented perpendicular to the channels' direction. Single spatial and longitudinal mode CW operation is achieved to 50 mW from one facet, in large spot sizes (2 x 7.5 micron, 1/e squared points in intensity) and narrow beams (6 deg x 23 deg), full width half-power). At 70 C ambient temperature CW lasing is obtained to 15 mW from one facet. Weak mode confinement in an asymmetric lateral waveguides provides discrimination against high-order mode oscillation.

Resonant metamaterial detectors based on THz quantum-cascade structures

PubMed Central

Benz, A.; Krall, M.; Schwarz, S.; Dietze, D.; Detz, H.; Andrews, A. M.; Schrenk, W.; Strasser, G.; Unterrainer, K.

2014-01-01

We present the design, fabrication and characterisation of an intersubband detector employing a resonant metamaterial coupling structure. The semiconductor heterostructure relies on a conventional THz quantum-cascade laser design and is operated at zero bias for the detector operation. The same active region can be used to generate or detect light depending on the bias conditions and the vertical confinement. The metamaterial is processed directly into the top metal contact and is used to couple normal incidence radiation resonantly to the intersubband transitions. The device is capable of detecting light below and above the reststrahlenband of gallium-arsenide corresponding to the mid-infrared and THz spectral region. PMID:24608677

Integrated Fiber-Optic Coupler.

DTIC Science & Technology

1987-04-01

p. 563, 1984. 1 .T.H. W. n h= n , G.M. Metze, B.- Y . Tuu ,J.C.C. Far., "A a s double-heterostructure diode lasers fabricated on a monolithic GaAs/Si...INII RAitI) R HR ( OLIlIR HR t( N ,% NOS( I D108 I R IOst\\1 tN( LASS~l1 D R 87 mm mhhh z V. 0 0- z C ,, Technical Document 1086 April 1987 Integrated...Cmeed".~) n Interated Fiber-Optic Coupler 12 PERSONAL AU1HOS) P.L Pruaal, E.R. Foesuim 139 TYPE OF RE[POR 3b, IME COVERED4 DATE OF REPORT (’r. 4#e ow S

Strong interlayer coupling in phosphorene/graphene van der Waals heterostructure: A first-principles investigation

NASA Astrophysics Data System (ADS)

Hu, Xue-Rong; Zheng, Ji-Ming; Ren, Zhao-Yu

2018-04-01

Based on first-principles calculations within the framework of density functional theory, we study the electronic properties of phosphorene/graphene heterostructures. Band gaps with different sizes are observed in the heterostructure, and charges transfer from graphene to phosphorene, causing the Fermi level of the heterostructure to shift downward with respect to the Dirac point of graphene. Significantly, strong coupling between two layers is discovered in the band spectrum even though it has a van der Waals heterostructure. A tight-binding Hamiltonian model is used to reveal that the resonance of the Bloch states between the phosphorene and graphene layers in certain K points combines with the symmetry matching between band states, which explains the reason for the strong coupling in such heterostructures. This work may enhance the understanding of interlayer interaction and composition mechanisms in van der Waals heterostructures consisting of two-dimensional layered nanomaterials, and may indicate potential reference information for nanoelectronic and optoelectronic applications.

Enhanced photoresponse characteristics of transistors using CVD-grown MoS2/WS2 heterostructures

NASA Astrophysics Data System (ADS)

Shan, Junjie; Li, Jinhua; Chu, Xueying; Xu, Mingze; Jin, Fangjun; Fang, Xuan; Wei, Zhipeng; Wang, Xiaohua

2018-06-01

Semiconductor heterostructures based on transition metal dichalcogenides provide a broad platform to research two-dimensional nanomaterials and design atomically thin devices for fundamental and applied interests. The MoS2/WS2 heterostructure was prepared on SiO2/Si substrate by chemical vapor deposition (CVD) in our research. And the optical properties of the heterostructure was characterized by Raman and photoluminescence (PL) spectroscopy. The similar 2 orders of magnitude decrease of PL intensity in MoS2/WS2 heterostructures was tested, which is attribute to the electrical and optical modulation effects are connected with the interfacial charge transfer between MoS2 and WS2 films. Using MoS2/WS2 heterostructure as channel material of the phototransistor, we demonstrated over 50 folds enhanced photoresponsivity of multilayer MoS2 field-effect transistor. The results indicate that the MoS2/WS2 films can be a promising heterostructure material to enhance the photoresponse characteristics of MoS2-based phototransistors.

High-power Al-free active region (λ= 852nm) DFB laser diodes for atomic clocks and interferometry applications

NASA Astrophysics Data System (ADS)

Ligeret, V.; Vermersch, F.-J.; Bansropun, S.; Lecomte, M.; Calligaro, M.; Parillaud, O.; Krakowski, M.

2017-11-01

Atomic clocks will be used in the future European positioning system Galileo. Among them, the optically pumped clocks provide a better alternative with comparable accuracy for a more compact system. For these systems, diode lasers emitting at 852nm are strategic components. The laser in a conventional bench for atomic clocks presents disadvantages for spatial applications. A better approach would be to realise a system based on a distributed-feedback laser (DFB). We have developed the technological foundations of such lasers operating at 852nm. These include an Al free active region, a single spatial mode ridge waveguide and a DFB structure. The device is a separate confinement heterostructure with a GaInP large optical cavity and a single compressive strained GaInAsP quantum well. The broad area laser diodes are characterised by low internal losses (<3cm -1 ), a high internal efficiency (94%) and a low transparency current density (100A/cm2). For an AR-HR coated ridge Fabry Perot laser, we obtain a power of 230mW with M2=1.3. An optical power of 150mW was obtained at 854nm wavelength, 20°C for AR-HR coated devices. We obtain a single spatial mode emission with M2=1.21 and a SMSR over 30dB, both at 150mW. DFB Lasers at 852.12nm, corresponding to the D2 caesium transition, were then realised with a power of 40mW, 37°C for uncoated devices. The SMSR is over 30dB and the M2=1.33 at 40mW. Furthermore, the preliminary results of the linewidth obtained with a Fabry Perot interferometer give a value of less than 2MHz.

Positrons as interface-sensitive probes of polar semiconductor heterostructures

NASA Astrophysics Data System (ADS)

Makkonen, I.; Snicker, A.; Puska, M. J.; Mäki, J.-M.; Tuomisto, F.

2010-07-01

Group-III nitrides in their wurtzite crystal structure are characterized by large spontaneous polarization and significant piezoelectric contributions in heterostructures formed of these materials. Polarization discontinuities in polar heterostructures grown along the (0001) direction result in huge built-in electric fields on the order of megavolt per centimeter. We choose the III-nitride heterostructures as archetypal representatives of polar heterostructures formed of semiconducting or insulating materials and study the behavior of positrons in these structures using first-principles electronic-structure theory supported by positron annihilation experiments for bulk systems. The strong electric fields drive positrons close to interfaces, which is clearly seen in the predicted momentum distributions of annihilating electron-positron pairs as changes relative to the constituent bulk materials. Implications of the effect to positron defect studies of polar heterostructures are addressed.

Bulk diamond optical waveguides fabricated by focused femtosecond laser pulses

NASA Astrophysics Data System (ADS)

Hadden, J. P.; Sotillo, Belén.; Bharadwaj, Vibhav; Rampini, Stefano; Bosia, Federico; Picollo, Federico; Sakakura, Masaaki; Chiappini, Andrea; Fernandez, Toney T.; Osellame, Roberto; Miura, Kiyotaka; Ferrari, Maurizio; Ramponi, Roberta; Olivero, Paolo; Barclay, Paul E.; Eaton, Shane M.

2017-02-01

Diamond's nitrogen-vacancy (NV) centers show great promise in sensing applications and quantum computing due to their long electron spin coherence time and their ability to be located, manipulated and read out using light. The electrons of the NV center, largely localized at the vacancy site, combine to form a spin triplet, which can be polarized with 532- nm laser light, even at room temperature. The NV's states are isolated from environmental perturbations making their spin coherence comparable to trapped ions. An important breakthrough would be in connecting, using waveguides, multiple diamond NVs together optically. However, the inertness of diamond is a significant hurdle for the fabrication of integrated optics similar to those that revolutionized silicon photonics. In this work we show the possibility of buried waveguide fabrication in diamond, enabled by focused femtosecond high repetition rate laser pulses. We use μRaman spectroscopy to gain better insight into the structure and refractive index profile of the optical waveguides.

Using Rutherford Backscattering Spectroscopy to Characterize Targets for MTW

NASA Astrophysics Data System (ADS)

Brown, Gunnar; Stockler, Barak; Ward, Ryan; Freeman, Charlie; Padalino, Stephen; Stillman, Collin; Ivancic, Steven; Reagan, S. P.; Sangster, T. C.

2017-10-01

A study is underway to determine the composition and thickness of targets used at the Multiterawatt (MTW) laser facility at the Laboratory for Laser Energetics (LLE) using Rutherford backscattering spectroscopy (RBS). In RBS, an ion beam is incident on a sample and the scattered ions are detected with a surface barrier detector. The resulting energy spectra of the scattered ions can be analyzed to determine important parameters of the target including elemental composition and thickness. Proton, helium and deuterium beams from the 1.7 MV Pelletron accelerator at SUNY Geneseo have been used to characterize several different targets for MTW, including CH and aluminum foils of varying thickness. RBS spectra were also obtained for a cylindrical iron buried-layer target with aluminum dopant which was mounted on a silicon carbide stalk. The computer program SIMNRA is used to analyze the spectra. This work was funded in part by a Grant from the DOE through the Laboratory for Laser Energetics.

Tracking of buried layers during plasma-assisted femtosecond laser drilling of compound targets

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhvaniya, I. A., E-mail: irina.zhvaniya@physics.msu.ru; Garmatina, A. A.; Makarov, I. A.

It was shown that drilling of multi-layered target placed in the air by tightly focused femtosecond laser radiation with high fluence (up to 1000 J/cm{sup 2}) can be monitored online using plasma-induced X-ray emission and second harmonic of incident laser radiation. The technique based on X-rays registration is appeared to be more flexible than the method based on detection of second harmonic since its accuracy depends crucially on the target type. We demonstrated that the X-ray signal clearly indicates the transition from one layer to another during the microdrilling of targets consisting of 2–4 layers of titanium foil when a lasermore » beam is focused beneath the target surface at a depth comparable to the layer thickness. The diagnostics of microchannel production in the chicken eggshell was performed for the first time. It was found that the presence of albumen beneath the shell accounts for longtime generation of X-ray pulses.« less

Detecting Thermal Barrier Coating Delamination Using Visible and Near-Infrared Luminescence from Erbium-Doped Sublayers

NASA Technical Reports Server (NTRS)

Eldridge, J. I.; Bencic, T. J.; Martin, R. E.; Singh, J.; Wolfe, D. E.

2007-01-01

Nondestructive diagnostic tools are needed to monitor early stages of delamination progression in thermal barrier coatings (TBCs) because the risk of delamination induced coating failure will compromise engine performance and safety. Previous work has demonstrated that for TBCs composed of yttria-stabilized zirconia (YSZ), luminescence from a buried europium-doped sublayer can be utilized to identify the location of TBC delamination from the substantially higher luminescence intensity observed from the delaminated regions of the TBC. Luminescence measurements from buried europium-doped layers depend on sufficient transmittance of the 532 nm excitation and 606 nm emission wavelengths through the attenuating undoped YSZ overlayer to produce easily detected luminescence. In the present work, improved delamination indication is demonstrated using erbium-doped YSZ sublayers. For visible-wavelength luminescence, the erbium-doped sublayer offers the advantage of a very strong excitation peak at 517 nm that can be conveniently excited a 514 nm Ar ion laser. More importantly, the erbium-doped sublayer also produces near-infrared luminescence at 1550 nm that is effectively excited by a 980 nm laser diode. Both the 980 nm excitation and the 1550 nm emission are transmitted through the TBC with much less attenuation than visible wavelengths and therefore show great promise for delamination monitoring through thicker or more highly scattering TBCs. The application of this approach for both electron beam physical vapor deposited (EB-PVD) and plasma-sprayed TBCs is discussed.

The role of collective motion in the ultrafast charge transfer in van der Waals heterostructures

DOE PAGES

Wang, Han; Bang, Junhyeok; Sun, Yiyang; ...

2016-05-10

Here, the success of van der Waals (vdW) heterostructures, made of graphene, metal dichalcogenides, and other layered materials, hinges on the understanding of charge transfer across the interface as the foundation for new device concepts and applications. In contrast to conventional heterostructures, where a strong interfacial coupling is essential to charge transfer, recent experimental findings indicate that vdW heterostructues can exhibit ultra-fast charge transfer despite the weak binding of the heterostructure. Using time-dependent density functional theory molecular dynamics, we identify a strong dynamic coupling between the vdW layers associated with charge transfer. This dynamic coupling results in rapid nonlinear coherentmore » charge oscillations which constitute a purely electronic phenomenon and are shown to be a general feature of vdW heterostructures provided they have a critical minimum dipole coupling. Application to MoS2/WS2 heterostructure yields good agreement with experiment, indicating near complete charge transfer within a timescale of 100 fs.The success of van der Waals heterostructures made of graphene, metal dichalcogenides and other layered materials, hinges on the understanding of charge transfer across the interface as the foundation for new device concepts and applications. In contrast to conventional heterostructures, where a strong interfacial coupling is essential to charge transfer, recent experimental findings indicate that van der Waals heterostructues can exhibit ultrafast charge transfer despite the weak binding of these heterostructures. Here we find, using time-dependent density functional theory molecular dynamics, that the collective motion of excitons at the interface leads to plasma oscillations associated with optical excitation. By constructing a simple model of the van der Waals heterostructure, we show that there exists an unexpected criticality of the oscillations, yielding rapid charge transfer across the interface. Application to the MoS2/WS2 heterostructure yields good agreement with experiments, indicating near complete charge transfer within a timescale of 100 fs.« less

The role of collective motion in the ultrafast charge transfer in van der Waals heterostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Han; Bang, Junhyeok; Sun, Yiyang

Here, the success of van der Waals (vdW) heterostructures, made of graphene, metal dichalcogenides, and other layered materials, hinges on the understanding of charge transfer across the interface as the foundation for new device concepts and applications. In contrast to conventional heterostructures, where a strong interfacial coupling is essential to charge transfer, recent experimental findings indicate that vdW heterostructues can exhibit ultra-fast charge transfer despite the weak binding of the heterostructure. Using time-dependent density functional theory molecular dynamics, we identify a strong dynamic coupling between the vdW layers associated with charge transfer. This dynamic coupling results in rapid nonlinear coherentmore » charge oscillations which constitute a purely electronic phenomenon and are shown to be a general feature of vdW heterostructures provided they have a critical minimum dipole coupling. Application to MoS2/WS2 heterostructure yields good agreement with experiment, indicating near complete charge transfer within a timescale of 100 fs.The success of van der Waals heterostructures made of graphene, metal dichalcogenides and other layered materials, hinges on the understanding of charge transfer across the interface as the foundation for new device concepts and applications. In contrast to conventional heterostructures, where a strong interfacial coupling is essential to charge transfer, recent experimental findings indicate that van der Waals heterostructues can exhibit ultrafast charge transfer despite the weak binding of these heterostructures. Here we find, using time-dependent density functional theory molecular dynamics, that the collective motion of excitons at the interface leads to plasma oscillations associated with optical excitation. By constructing a simple model of the van der Waals heterostructure, we show that there exists an unexpected criticality of the oscillations, yielding rapid charge transfer across the interface. Application to the MoS2/WS2 heterostructure yields good agreement with experiments, indicating near complete charge transfer within a timescale of 100 fs.« less

Quantum well intermixing of indium gallium arsenide(phosphorus)/indium phosphorus heterostructures

NASA Astrophysics Data System (ADS)

Haysom, Joan E.

This thesis studies several aspects of the interdiffusion of InGaAs(P)/InP quantum well (QW) heterostructures, from the fundamental defect mechanisms, through optimization of processing parameters, to novel device applications. Conclusions from each of these areas have been drawn which further the scientific understanding and the manufacturability of the technique. The thermal stability of a series of different wafers is studied to highlight how poor quality of growth can cause increased interdiffusion, and to review the requirements for achieving repeatable annealing. Purposeful and controlled interdiffusion is accomplished through the introduction of excess defects into layers above the QWs, which during a subsequent anneal, diffuse through the QWs and enhance interdiffusion of atoms of the QWs with atoms of the barriers. These excess defects are introduced using two different techniques, via growth at low temperatures (LT) using chemical beam epitaxy (CBE), and via implantation of phosphorus ions. The CBE LT growth technique is new, and reported for the first time in this thesis. Characterization of the as-grown layers leads us to believe that they have an excess of phosphorus. The diffusion rate of the mobile defects which cause the intermixing is also measured, and the interdiffusion is shown to occur predominantly on the group-V sublattice. Due to many similarities between this and the results of the implantation technique, it is proposed that these mobile defects are the same for both intermixing approaches, and that the behaviour can be explained by a phosphorus interstitial mechanism. Annealing recipes for the implantation-induced technique are optimized, and the sample-to-sample reproducibility of the blueshift for this method was found to be quite good (standard deviations of ˜6 meV on blueshifts of ˜70 meV). The lateral selectivity and refractive index changes are characterized, and used in combination to create novel buried waveguide devices.

Nd:YAG laser combined with gold nanorods for potential application in port-wine stains: an in vivo study.

PubMed

Xing, Linzhuang; Chen, Bin; Li, Dong; Wu, Wenjuan; Wang, Guoxiang

2017-11-01

Neodymium:yttrium aluminum garnet (Nd:YAG) lasers exhibit considerable potential for treating deeply buried port-wine stains. However, the application of Nd:YAG laser is limited by its weak absorption to blood. This in vivo study tested the efficacy and safety of utilizing thiol-terminated methoxypolyethylene glycol-modified gold nanorods (PEG-GNRs) to enhance the absorption of Nd:YAG laser to blood. Mouse mesentery and dorsal skinfold chamber (DSC) model were prepared to analyze the thermal responses of a single venule without anatomic structures, as well as blood vessels in the complex structure of the skin, to laser light. After the injection of 0.44 mg of PEG-GNRs, the required threshold density of laser energy for blood coagulation and complete vasoconstriction decreased from 24 to 18  J/cm2 in the mesentery model and from 36 to 31  J/cm2 in the DSC model. The laser pulse required for blood coagulation and complete vasoconstriction decreased by 67.75% and 62.25% on average in the mesentery model and by 67.55% and 54.45% on average in the DSC model. Histological and histochemical results confirmed that PEG-GNRs are nontoxic in the entire mouse life span. Therefore, combining PEG-GNRs with Nd:YAG laser may be effective and safe for inducing an obvious thermal response of blood vessels under low energy density and minimal pulse conditions. (2017) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE).

Optical properties of metamorphic GaAs/InAlGaAs/InGaAs heterostructures with InAs/InGaAs quantum wells, emitting light in the 1250–1400-nm spectral range

DOE Office of Scientific and Technical Information (OSTI.GOV)

Egorov, A. Yu., E-mail: anton@beam.ioffe.ru; Karachinsky, L. Ya.; Novikov, I. I.

It is demonstrated that metamorphic GaAs/InAlGaAs/InGaAs heterostructures with InAs/InGaAs quantum wells, which emit light in the 1250–1400 nm spectral range, can be fabricated by molecular-beam epitaxy. The structural and optical properties of the heterostructures are studied by X-ray diffraction analysis, transmission electron microscopy, and the photoluminescence method. Comparative analysis of the integrated photoluminescence intensity of the heterostructures and a reference sample confirm the high efficiency of radiative recombination in the heterostructures. It is confirmed by transmission electron microscopy that dislocations do not penetrate into the active region of the metamorphic heterostructures, where the radiative recombination of carriers occurs.

Charge transfer in crystalline germanium/monolayer MoS 2 heterostructures prepared by chemical vapor deposition

DOE PAGES

Lin, Yung-Chen; Bilgin, Ismail; Ahmed, Towfiq; ...

2016-09-21

Heterostructuring provides novel opportunities for exploring emergent phenomena and applications by developing designed properties beyond those of homogeneous materials. Advances in nanoscience enable the preparation of heterostructures formed incommensurate materials. Two-dimensional (2D) materials, such as graphene and transition metal dichalcogenides, are of particular interest due to their distinct physical characteristics. There have been recent changes in new research areas related to 2D/2D heterostructures. But, other heterostructures such as 2D/three-dimensional (3D) materials have not been thoroughly studied yet although the growth of 3D materials on 2D materials creating 2D/3D heterostructures with exceptional carrier transport properties has been reported. Here also wemore » report a novel heterostructure composed of Ge and monolayer MoS 2, prepared by chemical vapor deposition. A single crystalline Ge (110) thin film was grown on monolayer MoS 2. The electrical characteristics of Ge and MoS 2 in the Ge/MoS 2 heterostructure were remarkably different from those of isolated Ge and MoS 2. The field-effect conductivity type of the monolayer MoS 2 is converted from n-type to p-type by growth of the Ge thin film on top of it. Undoped Ge on MoS 2 is highly conducting. The observations can be explained by charge transfer in the heterostructure as opposed to chemical doping via the incorporation of impurities, based on our first-principles calculations.« less

Charge transport and electron-hole asymmetry in low-mobility graphene/hexagonal boron nitride heterostructures

NASA Astrophysics Data System (ADS)

Li, Jiayu; Lin, Li; Huang, Guang-Yao; Kang, N.; Zhang, Jincan; Peng, Hailin; Liu, Zhongfan; Xu, H. Q.

2018-02-01

Graphene/hexagonal boron nitride (G/h-BN) heterostructures offer an excellent platform for developing nanoelectronic devices and for exploring correlated states in graphene under modulation by a periodic superlattice potential. Here, we report on transport measurements of nearly 0 ° -twisted G/h-BN heterostructures. The heterostructures investigated are prepared by dry transfer and thermally annealing processes and are in the low mobility regime (approximately 3000 cm2 V-1 s-1 at 1.9 K). The replica Dirac spectra and Hofstadter butterfly spectra are observed on the hole transport side, but not on the electron transport side, of the heterostructures. We associate the observed electron-hole asymmetry with the presence of a large difference between the opened gaps in the conduction and valence bands and a strong enhancement in the interband contribution to the conductivity on the electron transport side in the low-mobility G/h-BN heterostructures. We also show that the gaps opened at the central Dirac point and the hole-branch secondary Dirac point are large, suggesting the presence of strong graphene-substrate interaction and electron-electron interaction in our G/h-BN heterostructures. Our results provide additional helpful insight into the transport mechanism in G/h-BN heterostructures.

Graphene/blue-phosphorus heterostructure as potential anode materials for sodium-ion batteries

NASA Astrophysics Data System (ADS)

Fan, Kaimin; Tang, Ting; Wu, Shiyun; Zhang, Zhiyuan

2018-01-01

The first-principles calculations based on density functional theory (DFT) have been implemented to investigate the graphene/blue-phosphorus (G/BP) heterostructure as potential anode material for SIBs. The adsorption and diffusion behaviors of sodium (Na) in G/BP heterostructure and the effect of external electric field on Na adsorption have been investigated. The results indicate that G/BP heterostructure with Na adsorption is metallic due to Na incorporation, which is of benefit for electronic conductivity as anode material. The results show that the design of G/BP heterostructure is an efficient scheme to enhance the Na adsorption in G/BP without affecting the high mobility of Na in the G/BP heterostructure surface. The present work demonstrates that the external electric field can effectively modulate the adsorption of Na, and the adsorption behavior of Na is more sensitive to the external electric field when E > 0.10 V Å-1 in G/BP heterostructure. The Mulliken population analysis and DOS calculations have been performed to explore the charge transfer and the interaction between Na and G/BP.

Efficient Interlayer Relaxation and Transition of Excitons in Epitaxial and Non-epitaxial MoS2/WS2 Heterostructures

DOE PAGES

Yu, Yifei; Hu, Shi; Su, Liqin; ...

2014-12-03

Semiconductor heterostructurs provide a powerful platform for the engineering of excitons. Here we report on the excitonic properties of two-dimensional (2D) heterostructures that consist of monolayer MoS2 and WS2 stacked epitaxially or non-epitaxially in the vertical direction. We find similarly efficient interlayer relaxation and transition of excitons in both the epitaxial and non-epitaxial heterostructures. This is manifested by a two orders of magnitude decrease in the photoluminescence and an extra absorption peak at low energy region of both heterostructures. The MoS2/WS2 heterostructures show weak interlayer coupling and essentially act as an atomic-scale heterojunction with the intrinsic band structures of themore » two monolayers largely preserved. They are particularly promising for the applications that request efficient dissociation of excitons and strong light absorption, including photovoltaics, solar fuels, photodetectors, and optical modulators. Our results also indicate that 2D heterostructures promise to provide capabilities to engineer excitons from the atomic level without concerns of interfacial imperfection.« less

Optical parameters of diode lasers based on an InAsSb/InAsSbP heterostructure

DOE Office of Scientific and Technical Information (OSTI.GOV)

Astakhova, A. P.; Bez'yazychnaya, T. V.; Burov, L. I.

2008-02-15

The rates of radiative recombination (including transitions induced by enhanced luminescence) and nonradiative recombination, internal quantum yield of luminescence, and the matrix element for band-to-band optical transitions were determined for the first time for InAsSb/InAsSbP diode lasers oscillating at wavelengths of 3.1-3.2 {mu}m. It is established that the contribution of nonradiative recombination to the lasing threshold can be as large as 97%. The internal quantum yield of luminescence for the InAs{sub 0.97}Sb{sub 0.03} compound is no higher than 3%. Most likely, the nonradiative channel is formed with involvement of Auger recombination with the constant C = 4.2 Multiplication-Sign 10{sup -38}more » m{sup 6}s{sup -1} (T = 77 K). The studied samples of lasers feature relatively low optical losses {rho} = 900 m{sup -1} and internal quantum efficiency of emission at the level of 0.6. The spontaneous lifetime of nonequilibrium charge carriers as determined from the radiative-recombination rate is equal to 6 Multiplication-Sign 10{sup -8} s, which is consistent with known published data.« less

Optical parameters of diode lasers based on an InAsSb/InAsSbP heterostructure

DOE Office of Scientific and Technical Information (OSTI.GOV)

Astakhova, A. P.; Bez'yazychnaya, T. V.; Burov, L. I.

2008-02-15

The rates of radiative recombination (including transitions induced by enhanced luminescence) and nonradiative recombination, internal quantum yield of luminescence, and the matrix element for band-to-band optical transitions were determined for the first time for InAsSb/InAsSbP diode lasers oscillating at wavelengths of 3.1-3.2 {mu}m. It is established that the contribution of nonradiative recombination to the lasing threshold can be as large as 97%. The internal quantum yield of luminescence for the InAs{sub 0.97}Sb{sub 0.03} compound is no higher than 3%. Most likely, the nonradiative channel is formed with involvement of Auger recombination with the constant C = 4.2 x 10{sup -38}more » m{sup 6}s{sup -1} (T = 77 K). The studied samples of lasers feature relatively low optical losses {rho} = 900 m{sup -1} and internal quantum efficiency of emission at the level of 0.6. The spontaneous lifetime of nonequilibrium charge carriers as determined from the radiative-recombination rate is equal to 6 x 10{sup -8} s, which is consistent with known published data.« less

Modeling techniques for quantum cascade lasers

NASA Astrophysics Data System (ADS)

Jirauschek, Christian; Kubis, Tillmann

2014-03-01

Quantum cascade lasers are unipolar semiconductor lasers covering a wide range of the infrared and terahertz spectrum. Lasing action is achieved by using optical intersubband transitions between quantized states in specifically designed multiple-quantum-well heterostructures. A systematic improvement of quantum cascade lasers with respect to operating temperature, efficiency, and spectral range requires detailed modeling of the underlying physical processes in these structures. Moreover, the quantum cascade laser constitutes a versatile model device for the development and improvement of simulation techniques in nano- and optoelectronics. This review provides a comprehensive survey and discussion of the modeling techniques used for the simulation of quantum cascade lasers. The main focus is on the modeling of carrier transport in the nanostructured gain medium, while the simulation of the optical cavity is covered at a more basic level. Specifically, the transfer matrix and finite difference methods for solving the one-dimensional Schrödinger equation and Schrödinger-Poisson system are discussed, providing the quantized states in the multiple-quantum-well active region. The modeling of the optical cavity is covered with a focus on basic waveguide resonator structures. Furthermore, various carrier transport simulation methods are discussed, ranging from basic empirical approaches to advanced self-consistent techniques. The methods include empirical rate equation and related Maxwell-Bloch equation approaches, self-consistent rate equation and ensemble Monte Carlo methods, as well as quantum transport approaches, in particular the density matrix and non-equilibrium Green's function formalism. The derived scattering rates and self-energies are generally valid for n-type devices based on one-dimensional quantum confinement, such as quantum well structures.

Study of high-power GaAs-based laser diodes operation and failure by cross-sectional electrostatic force microscopy

NASA Astrophysics Data System (ADS)

Ankudinov, A.; Titkov, A. N.; Evtikhiev, Vadim P.; Kotelnikov, Eugeny Y.; Bazhenov, N.; Zegrya, Georgy G.; Huhtinen, H.; Laiho, R.

2003-06-01

One of the important factors that restricts the power limit of semiconductor lasers is a catastrophic optical mirror damage. This process is significantly suppressed through decreasing the optical power density due to its redistribution over the broad transverse waveguide (BW). Recently it was shown that record-breaking values of the quasicontinuous and continuous-wave (QWC and CW) output power for 100-μm-wide-aperture devices can be achieved by incorporating a broad transverse waveguide into 0.97 μm emitting Al-free InGaAs(P)/InGaP/GaAs and Al-containing InGaAs/AlGaAs/GaAs separate confinement heterostructure quantum-well lasers (SCH-QWL). Another important factor limiting the CW output power is the Joule overheating of a laser diode due to an extra serial resistance. Traditionally, a decrease in the resistance is achieved by development of the contacts, whereas a voltage distribution across the device structure is not analyzed properly. At high operating currents the applied voltage can drop not only across the n-p-junction, but also at certain additional regions of the laser structure depending on a particular design of the device. Electrostatic force microscopy (EFM) provides a very promising method to study the voltage distribution across an operating device with a nanometer space resolution. An application of EFM for diagnostics of III-V laser diodes without and under applied biases have been recently demonstrated. However, the most interesting range of the biases, the lazing regime, has not been studied yet.

Modeling techniques for quantum cascade lasers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jirauschek, Christian; Kubis, Tillmann

2014-03-15

Quantum cascade lasers are unipolar semiconductor lasers covering a wide range of the infrared and terahertz spectrum. Lasing action is achieved by using optical intersubband transitions between quantized states in specifically designed multiple-quantum-well heterostructures. A systematic improvement of quantum cascade lasers with respect to operating temperature, efficiency, and spectral range requires detailed modeling of the underlying physical processes in these structures. Moreover, the quantum cascade laser constitutes a versatile model device for the development and improvement of simulation techniques in nano- and optoelectronics. This review provides a comprehensive survey and discussion of the modeling techniques used for the simulation ofmore » quantum cascade lasers. The main focus is on the modeling of carrier transport in the nanostructured gain medium, while the simulation of the optical cavity is covered at a more basic level. Specifically, the transfer matrix and finite difference methods for solving the one-dimensional Schrödinger equation and Schrödinger-Poisson system are discussed, providing the quantized states in the multiple-quantum-well active region. The modeling of the optical cavity is covered with a focus on basic waveguide resonator structures. Furthermore, various carrier transport simulation methods are discussed, ranging from basic empirical approaches to advanced self-consistent techniques. The methods include empirical rate equation and related Maxwell-Bloch equation approaches, self-consistent rate equation and ensemble Monte Carlo methods, as well as quantum transport approaches, in particular the density matrix and non-equilibrium Green's function formalism. The derived scattering rates and self-energies are generally valid for n-type devices based on one-dimensional quantum confinement, such as quantum well structures.« less

One-step synthesis of van der Waals heterostructures of graphene and two-dimensional superconducting α -M o2C

NASA Astrophysics Data System (ADS)

Qiao, Jia-Bin; Gong, Yue; Zuo, Wei-Jie; Wei, Yi-Cong; Ma, Dong-Lin; Yang, Hong; Yang, Ning; Qiao, Kai-Yao; Shi, Jin-An; Gu, Lin; He, Lin

2017-05-01

Assembling different two-dimensional (2D) crystals, covering a very broad range of properties, into van der Waals (vdW) heterostructures enables unprecedented possibilities for combining the best of different ingredients in one objective material. So far, metallic, semiconducting, and insulating 2D crystals have been used successfully in making functional vdW heterostructures with properties by design. Here, we expand 2D superconducting crystals as a building block of vdW hererostructures. One-step growth of large-scale high-quality vdW heterostructures of graphene and 2D superconducting α -M o2C by using chemical vapor deposition is reported. The superconductivity and its 2D nature of the heterostructures are characterized by our scanning tunneling microscopy measurements. This adds 2D superconductivity, the most attractive property of condensed matter physics, to vdW heterostructures.

Oxygen vacancies promoted interfacial charge carrier transfer of CdS/ZnO heterostructure for photocatalytic hydrogen generation.

PubMed

Xie, Ying Peng; Yang, Yongqiang; Wang, Guosheng; Liu, Gang

2017-10-01

The solid-state Z-scheme trinary/binary heterostructures show the advantage of utilizing the high-energy photogenerated charge carriers in photocatalysis. However, the key factors controlling such Z-scheme in the binary heterostructures are still unclear. In this paper, we showed that oxygen vacancies could act as an interface electron transfer mediator to promote the direct Z-scheme charge transfer process in binary semiconductor heterostructures of CdS/ZnS. Increasing the concentration of surface oxygen vacancies of ZnO crystal can greatly enhance photocatalytic hydrogen generation of CdS/ZnO heterostructure. This was attributed to the strengthened direct Z-scheme charge transfer process in CdS/ZnO, as evidenced by steady-state/time-resolved photoluminescence spectroscopy and selective photodeposition of metal particles on the heterostructure. Copyright © 2017 Elsevier Inc. All rights reserved.

Gate-Tunable Spin Transport and Giant Electroresistance in Ferromagnetic Graphene Vertical Heterostructures

PubMed Central

Myoung, Nojoon; Park, Hee Chul; Lee, Seung Joo

2016-01-01

Controlling tunneling properties through graphene vertical heterostructures provides advantages in achieving large conductance modulation which has been known as limitation in lateral graphene device structures. Despite of intensive research on graphene vertical heterosturctures for recent years, the potential of spintronics based on graphene vertical heterostructures remains relatively unexplored. Here, we present an analytical device model for graphene-based spintronics by using ferromagnetic graphene in vertical heterostructures. We consider a normal or ferroelectric insulator as a tunneling layer. The device concept yields a way of controlling spin transport through the vertical heterostructures, resulting in gate-tunable spin-switching phenomena. Also, we revealed that a ‘giant’ resistance emerges through a ferroelectric insulating layer owing to the anti-parallel configuration of ferromagnetic graphene layers by means of electric fields via gate and bias voltages. Our findings discover the prospect of manipulating the spin transport properties in vertical heterostructures without use of magnetic fields. PMID:27126101

Precise tuning in platinum-nickel/nickel sulfide interface nanowires for synergistic hydrogen evolution catalysis

PubMed Central

Wang, Pengtang; Zhang, Xu; Zhang, Jin; Wan, Sheng; Guo, Shaojun; Lu, Gang; Yao, Jianlin; Huang, Xiaoqing

2017-01-01

Comprising abundant interfaces, multicomponent heterostructures can integrate distinct building blocks into single entities and yield exceptional functionalities enabled by the synergistic components. Here we report an efficient approach to construct one-dimensional metal/sulfide heterostructures by directly sulfuring highly composition-segregated platinum-nickel nanowires. The heterostructures possess a high density of interfaces between platinum-nickel and nickel sulfide components, which cooperate synergistically towards alkaline hydrogen evolution reaction. The platinum-nickel/nickel sulfide heterostructures can deliver a current density of 37.2 mA cm−2 at an overpotential of 70 mV, which is 9.7 times higher than that of commercial Pt/C. The heterostructures also offer enhanced stability revealed by long-term chronopotentiometry measurements. The present work highlights a potentially powerful interface-engineering strategy for designing multicomponent heterostructures with advanced performance in hydrogen evolution reaction and beyond. PMID:28239145

LD-pumped erbium and neodymium lasers with high energy and output beam quality

NASA Astrophysics Data System (ADS)

Kabanov, Vladimir V.; Bezyazychnaya, Tatiana V.; Bogdanovich, Maxim V.; Grigor'ev, Alexandr V.; Lebiadok, Yahor V.; Lepchenkov, Kirill V.; Ryabtsev, Andrew G.; Ryabtsev, Gennadii I.; Shchemelev, Maxim A.

2013-05-01

Physical and fabrication peculiarities which provide the high output energy and beam quality for the diode pumped erbium glass and Nd:YAG lasers are considered. Developed design approach allow to make passively Q-switched erbium glass eye-safe portable laser sources with output energy 8 - 12 mJ (output pulse duration is less than 25 ns, pulse repetition rate up to 5 Hz) and beam quality M2 less than 1.3. To reach these values the erbium laser pump unit parameters were optimized also. Namely, for the powerful laser diode arrays the optimal near-field fill-factor, output mirror reflectivity and heterostructure properties were determined. Construction of advanced diode and solid-state lasers as well as the optical properties of the active element and the pump unit make possible the lasing within a rather wide temperature interval (e.g. from minus forty till plus sixty Celsius degree) without application of water-based chillers. The transversally pumped Nd:YAG laser output beam uniformity was investigated depending on the active element (AE) pump conditions. In particular, to enhance the pump uniformity within AE volume, a special layer which practically doesn't absorb the pump radiation but effectively scatters the pump and lasing beams, was used. Application of such layer results in amplified spontaneous emission suppression and improvement of the laser output beam uniformity. The carried out investigations allow us to fabricate the solid-state Nd:YAG lasers (1064 nm) with the output energy up to 420 mJ at the pulse repetition rate up to 30 Hz and the output energy up to 100 mJ at the pulse repetition rate of of 100 Hz. Also the laser sources with following characteristics: 35 mJ, 30 Hz (266 nm); 60 mJ, 30 Hz (355 nm); 100 mJ, 30 Hz (532 nm) were manufactured on the base of the developed Nd:YAG quantrons.

Electrical detection of spin transport in Si two-dimensional electron gas systems

NASA Astrophysics Data System (ADS)

Chang, Li-Te; Fischer, Inga Anita; Tang, Jianshi; Wang, Chiu-Yen; Yu, Guoqiang; Fan, Yabin; Murata, Koichi; Nie, Tianxiao; Oehme, Michael; Schulze, Jörg; Wang, Kang L.

2016-09-01

Spin transport in a semiconductor-based two-dimensional electron gas (2DEG) system has been attractive in spintronics for more than ten years. The inherent advantages of high-mobility channel and enhanced spin-orbital interaction promise a long spin diffusion length and efficient spin manipulation, which are essential for the application of spintronics devices. However, the difficulty of making high-quality ferromagnetic (FM) contacts to the buried 2DEG channel in the heterostructure systems limits the potential developments in functional devices. In this paper, we experimentally demonstrate electrical detection of spin transport in a high-mobility 2DEG system using FM Mn-germanosilicide (Mn(Si0.7Ge0.3)x) end contacts, which is the first report of spin injection and detection in a 2DEG confined in a Si/SiGe modulation doped quantum well structure (MODQW). The extracted spin diffusion length and lifetime are l sf = 4.5 μm and {τ }{{s}}=16 {{ns}} at 1.9 K respectively. Our results provide a promising approach for spin injection into 2DEG system in the Si-based MODQW, which may lead to innovative spintronic applications such as spin-based transistor, logic, and memory devices.

Metalorganic vapor phase epitaxial growth of red and infrared vertical-cavity surface-emitting laser diodes

NASA Astrophysics Data System (ADS)

Schneider, R. P.; Lott, J. A.; Lear, K. L.; Choquette, K. D.; Crawford, M. H.; Kilcoyne, S. P.; Figiel, J. J.

1994-12-01

Metalorganic vapor phase epitaxy (MOVPE) is used for the growth of vertical-cavity surface-emitting laser (VCSEL) diodes. MOVPE exhibits a number of important advantages over the more commonly-used molecular-beam epitaxial (MBE) techniques, including ease of continuous compositional grading and carbon doping for low-resistance p-type distributed Bragg reflectors (DBRs), higher growth rates for rapid throughput and greater versatility in choice of materials and dopants. Planar gain-guided red VCSELs based on AlGaInP/AlGaAs heterostructures lase continuous-wave at room temperature, with voltage thresholds between 2.5 and 3 V and maximum power outputs of over 0.3 mW. Top-emitting infra-red (IR) VCSELs exhibit the highest power-conversion (wall-plug) efficiencies (21%), lowest threshold voltage (1.47 V), and highest single mode power (4.4 mW from an 8 μm device) yet reported. These results establish MOVPE as a preferred growth technique for this important new family of photonic devices.

Volumetric Heating of Ultra-High Energy Density Relativistic Plasmas by Ultrafast Laser Irradiation of Aligned Nanowire Arrays

NASA Astrophysics Data System (ADS)

Bargsten, Clayton; Hollinger, Reed; Shlyaptsev, Vyacheslav; Pukhov, Alexander; Keiss, David; Townsend, Amanda; Wang, Yong; Wang, Shoujun; Prieto, Amy; Rocca, Jorge

2014-10-01

We have demonstrated the volumetric heating of near-solid density plasmas to keV temperatures by ultra-high contrast femtosecond laser irradiation of arrays of vertically aligned nanowires with an average density up to 30% solid density. X-ray spectra show that irradiation of Ni and Au nanowire arrays with laser pulses of relativistic intensities ionizes plasma volumes several micrometers in depth to the He-like and Co-like (Au 52 +) stages respectively. The penetration depth of the heat into the nanowire array was measured monitoring He-like Co lines from irradiated arrays in which the nanowires are composed of a Co segment buried under a selected length of Ni. The measurement shows the ionization reaches He-like Co for depth of up to 5 μm within the target. This volumetric plasma heating approach creates a new laboratory plasma regime in which extreme plasma parameters can be accessed with table-top lasers. Scaling to higher laser intensities promises to create plasmas with temperatures and pressures approaching those in the center of the sun. Work supported by the U.S Department of Energy, Fusion Energy Sciences and the Defense Threat Reduction Agency grant HDTRA-1-10-1-0079. A.P was supported by of DFG-funded project TR18.

Laser-induced thermo-lens in ion-implanted optically-transparent polymer

NASA Astrophysics Data System (ADS)

Stefanov, Ivan L.; Ivanov, Victor G.; Hadjichristov, Georgi B.

2009-10-01

A strong laser-induced thermo-lens (LITL) effect is found in optically-transparent ion-implanted polymer upon irradiation by a cw laser with a power up to 100 mW (λ = 532 nm). The effect is observed in bulk polymethylmethacrylate (PMMA) implanted with silicon ions (Si+). A series of PMMA specimens is examined, subjected to low-energy (50 keV) Si+ implantation at various dosages in the range from 1014 to 1017 ions/cm2. The thermo-lensing is unambiguously attributed to the modification of the subsurface region of the polymer upon the ion implantation. Having a gradient refractive-index in-depth profile, the subsurface organic-carbonaceous layer produced in the polymer by ion implantation, is responsible for the LITL effect observed in reflection geometry. The LITL occurs due to optical absorption of the ion-implanted layer of a thickness of about 100 nm buried in a depth ~ 100 nm, and subsequent laser-induced change in the refractive index of the Si+-implanted PMMA. Being of importance as considering photonic applications of ion-implanted optically-transparent polymers, the LITL effect in Si+-implanted PMMA is studied as a function of the implant dose, the incident laser power and incidence angle, and is linked to the structure formed in this ion-implanted plastic.

Diagnosis of energy transport in iron buried layer targets using an extreme ultraviolet laser

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shahzad, M.; Culfa, O.; Rossall, A. K.

2015-02-15

We demonstrate the use of extreme ultra-violet (EUV) laboratory lasers in probing energy transport in laser irradiated solid targets. EUV transmission through targets containing a thin layer of iron (50 nm) encased in plastic (CH) after irradiation by a short pulse (35 fs) laser focussed to irradiances 3 × 10{sup 16} Wcm{sup −2} is measured. Heating of the iron layer gives rise to a rapid decrease in EUV opacity and an increase in the transmission of the 13.9 nm laser radiation as the iron ionizes to Fe{sup 5+} and above where the ion ionisation energy is greater than the EUV probe photon energy (89 eV).more » A one dimensional hydrodynamic fluid code HYADES has been used to simulate the temporal variation in EUV transmission (wavelength 13.9 nm) using IMP opacity values for the iron layer and the simulated transmissions are compared to measured transmission values. When a deliberate pre-pulse is used to preform an expanding plastic plasma, it is found that radiation is important in the heating of the iron layer while for pre-pulse free irradiation, radiation transport is not significant.« less

Nonradiative lifetime extraction using power-dependent relative photoluminescence of III-V semiconductor double-heterostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Walker, A. W., E-mail: alexandre.walker@ise.fraunhofer.de; Heckelmann, S.; Karcher, C.

2016-04-21

A power-dependent relative photoluminescence measurement method is developed for double-heterostructures composed of III-V semiconductors. Analyzing the data yields insight into the radiative efficiency of the absorbing layer as a function of laser intensity. Four GaAs samples of different thicknesses are characterized, and the measured data are corrected for dependencies of carrier concentration and photon recycling. This correction procedure is described and discussed in detail in order to determine the material's Shockley-Read-Hall lifetime as a function of excitation intensity. The procedure assumes 100% internal radiative efficiency under the highest injection conditions, and we show this leads to less than 0.5% uncertainty.more » The resulting GaAs material demonstrates a 5.7 ± 0.5 ns nonradiative lifetime across all samples of similar doping (2–3 × 10{sup 17 }cm{sup −3}) for an injected excess carrier concentration below 4 × 10{sup 12 }cm{sup −3}. This increases considerably up to longer than 1 μs under high injection levels due to a trap saturation effect. The method is also shown to give insight into bulk and interface recombination.« less

Fabrication and characterization of copper oxide (CuO)–gold (Au)–titania (TiO{sub 2}) and copper oxide (CuO)–gold (Au)–indium tin oxide (ITO) nanowire heterostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chopra, Nitin, E-mail: nchopra@eng.ua.edu; Department of Biological Sciences, The University of Alabama, Tuscaloosa, AL 35487; Shi, Wenwu

2014-10-15

Nanoscale heterostructures composed of standing copper oxide nanowires decorated with Au nanoparticles and shells of titania and indium tin oxide were fabricated. The fabrication process involved surfactant-free and wet-chemical nucleation of gold nanoparticles on copper oxide nanowires followed by a line-of-sight sputtering of titania or indium tin oxide. The heterostructures were characterized using high resolution electron microscopy, diffraction, and energy dispersive spectroscopy. The interfaces, morphologies, crystallinity, phases, and chemical compositions were analyzed. The process of direct nucleation of gold nanoparticles on copper oxide nanoparticles resulted in low energy interface with aligned lattice for both the components. Coatings of polycrystalline titaniamore » or amorphous indium tin oxide were deposited on standing copper oxide nanowire–gold nanoparticle heterostructures. Self-shadowing effect due to standing nanowire heterostructures was observed for line-of-sight sputter deposition of titania or indium tin oxide coatings. Finally, the heterostructures were studied using Raman spectroscopy and ultraviolet–visible spectroscopy, including band gap energy analysis. Tailing in the band gap energy at longer wavelengths (or lower energies) was observed for the nanowire heterostructures. - Highlights: • Heterostructures comprised of CuO nanowires coated with Au nanoparticles. • Au nanoparticles exhibited nearly flat and low energy interface with nanowire. • Heterostructures were further sputter-coated with oxide shell of TiO{sub 2} or ITO. • The process resulted in coating of polycrystalline TiO{sub 2} and amorphous ITO shell.« less

Micro knife-edge optical measurement device in a silicon-on-insulator substrate.

PubMed

Chiu, Yi; Pan, Jiun-Hung

2007-05-14

The knife-edge method is a commonly used technique to characterize the optical profiles of laser beams or focused spots. In this paper, we present a micro knife-edge scanner fabricated in a silicon-on-insulator substrate using the micro-electromechanical-system technology. A photo detector can be fabricated in the device to allow further integration with on-chip signal conditioning circuitry. A novel backside deep reactive ion etching process is proposed to solve the residual stress effect due to the buried oxide layer. Focused optical spot profile measurement is demonstrated.

Charge carrier transfer in tungsten disulfide—black phosphorus heterostructures

NASA Astrophysics Data System (ADS)

Zhao, Siqi; He, Dawei; Wang, Yongsheng; Zhang, Xinwu; He, Jiaqi

2017-11-01

Photocarrier dynamics in tungsten disulfide—black phosphorus (BP) heterostructures were studied by time-resolved differential reflection measurements. The heterostructures were fabricated by stacking together monolayer WS2 and BP flakes that are both fabricated by mechanical exfoliation. Efficient and ultrafast transfer of photocarriers from WS2 to BP flakes was observed. This confirms the type-I band alignment of WS2/BP heterostructures that was predicted by theory. Accompanied with the photocarrier interlayer transfer process from WS2 to BP flakes, the change of the absorption of WS2 persists for several nanoseconds. These results promote the consciousness about the carrier dynamics of interlayer transfer process in van der Waals heterostructures and its application in optoelectronic devices.

Impurity-induced states in superconducting heterostructures

NASA Astrophysics Data System (ADS)

Liu, Dong E.; Rossi, Enrico; Lutchyn, Roman M.

2018-04-01

Heterostructures allow the realization of electronic states that are difficult to obtain in isolated uniform systems. Exemplary is the case of quasi-one-dimensional heterostructures formed by a superconductor and a semiconductor with spin-orbit coupling in which Majorana zero-energy modes can be realized. We study the effect of a single impurity on the energy spectrum of superconducting heterostructures. We find that the coupling between the superconductor and the semiconductor can strongly affect the impurity-induced states and may induce additional subgap bound states that are not present in isolated uniform superconductors. For the case of quasi-one-dimensional superconductor/semiconductor heterostructures we obtain the conditions for which the low-energy impurity-induced bound states appear.

Magnetic engineering in InSe/black-phosphorus heterostructure by transition-metal-atom Sc-Zn doping in the van der Waals gap

NASA Astrophysics Data System (ADS)

Ding, Yi-min; Shi, Jun-jie; Zhang, Min; Zhu, Yao-hui; Wu, Meng; Wang, Hui; Cen, Yu-lang; Guo, Wen-hui; Pan, Shu-hang

2018-07-01

Within the framework of the spin-polarized density-functional theory, we have studied the electronic and magnetic properties of InSe/black-phosphorus (BP) heterostructure doped with 3d transition-metal (TM) atoms from Sc to Zn. The calculated binding energies show that TM-atom doping in the van der Waals (vdW) gap of InSe/BP heterostructure is energetically favorable. Our results indicate that magnetic moments are induced in the Sc-, Ti-, V-, Cr-, Mn- and Co-doped InSe/BP heterostructures due to the existence of non-bonding 3d electrons. The Ni-, Cu- and Zn-doped InSe/BP heterostructures still show nonmagnetic semiconductor characteristics. Furthermore, in the Fe-doped InSe/BP heterostructure, the half-metal property is found and a high spin polarization of 100% at the Fermi level is achieved. The Cr-doped InSe/BP has the largest magnetic moment of 4.9 μB. The Sc-, Ti-, V-, Cr- and Mn-doped InSe/BP heterostructures exhibit antiferromagnetic ground state. Moreover, the Fe- and Co-doped systems display a weak ferromagnetic and paramagnetic coupling, respectively. Our studies demonstrate that the TM doping in the vdW gap of InSe/BP heterostructure is an effective way to modify its electronic and magnetic properties.

Science and Technology Review October/November 2009

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bearinger, J P

2009-08-21

This month's issue has the following articles: (1) Award-Winning Collaborations Provide Solutions--Commentary by Steven D. Liedle; (2) Light-Speed Spectral Analysis of a Laser Pulse--An optical device inspects and stops potentially damaging laser pulses; (3) Capturing Waveforms in a Quadrillionth of a Second--The femtoscope, a time microscope, improves the temporal resolution and dynamic range of conventional recording instruments; (4) Gamma-Ray Spectroscopy in the Palm of Your Hand--A miniature gamma-ray spectrometer provides increased resolution at a reduced cost; (5) Building Fusion Targets with Precision Robotics--A robotic system assembles tiny fusion targets with nanometer precision; (6) ROSE: Making Compiler Technology More Accessible--An open-sourcemore » software infrastructure makes powerful compiler techniques available to all programmers; (7) Restoring Sight to the Blind with an Artificial Retina--A retinal prosthesis could restore vision to people suffering from eye diseases; (8) Eradicating the Aftermath of War--A remotely operated system precisely locates buried land mines; (9) Compact Alignment for Diagnostic Laser Beams--A smaller, less expensive device aligns diagnostic laser beams onto targets; and (10) Securing Radiological Sources in Africa--Livermore and other national laboratories are helping African countries secure their nuclear materials.« less

High-speed scanning of critical structures in aviation using coordinate measurement machine and the laser ultrasonic.

PubMed

Swornowski, Pawel J

2012-01-01

Aviation is one of the know-how spheres containing a great deal of responsible sub-assemblies, in this case landing gear. The necessity for reducing production cycle times while achieving better quality compels metrologists to look for new and improved ways to perform inspection of critical structures. This article describes the ability to determine the shape deviation and location of defects in landing gear using coordinate measuring machines and laser ultrasonic with high-speed scanning. A nondestructive test is the basis for monitoring microcrack and corrosion propagation in the context of a damage-tolerant design approach. This article presents an overview of the basics and of the various metrological aspects of coordinate measurement and a nondestructive testing method in terms of high-speed scanning. The new test method (laser ultrasonic) promises to produce the necessary increase in inspection quality, but this is limited by the wide range of materials, geometries, and structure aeronautic parts used. A technique combining laser ultrasonic and F-SAFT (Fourier-Synthetic Aperture Focusing Technique) processing has been proposed for the detection of small defects buried in landing gear. The experimental results of landing gear inspection are also presented. © Wiley Periodicals, Inc.

TiO{sub 2} nanobelts with a uniform coating of g-C{sub 3}N{sub 4} as a highly effective heterostructure for enhanced photocatalytic activities

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhong, Xing; Jin, Meimei; Dong, Huaqing

2014-12-15

A novel g-C{sub 3}N{sub 4}/TiO{sub 2} nanobelt (NB) heterostructure was successfully designed and prepared. The as-prepared g-C{sub 3}N{sub 4}/TiO{sub 2} NB heterostructure exhibited high photocatalytic activity not only in the photodegradation of Rhodamine B (RhB) but also in photocatalytic H{sub 2} production. The g-C{sub 3}N{sub 4}/TiO{sub 2} NB heterostructure with a mass ratio of 1:1 demonstrated the best performance in the photodegradation of RhB, whereas a mass ratio of 3:1 demonstrated the highest H{sub 2} production rate of 46.6 μmol h{sup −1} in photocatalytic H{sub 2} production. We conclude that the synergistic effect between g-C{sub 3}N{sub 4} and TiO{sub 2}more » NBs promotes the photogenerated carrier separation in space. This valuable insight into the rational architectural design of nanostructure-based photocatalysts is expected to shed light on other photocatalytic reaction systems in the future. - Graphical abstract: A novel strategy to fabricate the g-C{sub 3}N{sub 4}/TiO{sub 2} nanobelt (NB) heterostructures was reported. The g-C{sub 3}N{sub 4}/TiO{sub 2} NB heterostructures exhibited highly effective photocatalytic activities for photodegradation of Rhodamine B and H{sub 2} production. - Highlights: • A novel strategy to fabricate the g-C{sub 3}N{sub 4}/TiO{sub 2} NB heterostructures was reported. • The heterostructure exhibited high catalytic activity in photodegradation of RhB. • The heterostructure showed good H{sub 2} productivity in photocatalytic water splitting. • The synergistic effect between g-C{sub 3}N{sub 4} and TiO{sub 2} NBs are important. • This study shows that the heterostructure can be an effective photocatalyst.« less

NaCl-assisted one-step growth of MoS2-WS2 in-plane heterostructures

NASA Astrophysics Data System (ADS)

Wang, Zhan; Xie, Yong; Wang, Haolin; Wu, Ruixue; Nan, Tang; Zhan, Yongjie; Sun, Jing; Jiang, Teng; Zhao, Ying; Lei, Yimin; Yang, Mei; Wang, Weidong; Zhu, Qing; Ma, Xiaohua; Hao, Yue

2017-08-01

Transition metal dichalcogenides (TMDs) have attracted considerable interest for exploration of next-generation electronics and optoelectronics in recent years. Fabrication of in-plane lateral heterostructures between TMDs has opened up excellent opportunities for engineering two-dimensional materials. The creation of high quality heterostructures with a facile method is highly desirable but it still remains challenging. In this work, we demonstrate a one-step growth method for the construction of high-quality MoS2-WS2 in-plane heterostructures. The synthesis was carried out using ambient pressure chemical vapor deposition (APCVD) with the assistance of sodium chloride (NaCl). It was found that the addition of NaCl played a key role in lowering the growth temperatures, in which the Na-containing precursors could be formed and condensed on the substrates to reduce the energy of the reaction. As a result, the growth regimes of MoS2 and WS2 are better matched, leading to the formation of in-plane heterostructures in a single step. The heterostructures were proved to be of high quality with a sharp and clear interface. This newly developed strategy with the assistance of NaCl is promising for synthesizing other TMDs and their heterostructures.

Tuning the electronic properties and Schottky barrier height of the vertical graphene/MoS2 heterostructure by an electric gating

NASA Astrophysics Data System (ADS)

Nguyen, Chuong V.

2018-04-01

In this paper, the electronic properties and Schottky contact in graphene/MoS2 (G/MoS2) heterostructure under an applied electric field are investigated by means of the density functional theory. It can be seen that the electronic properties of the G/MoS2 heterostructure are preserved upon contacting owing to the weak van der Waals interaction. We found that the n-type Schottky contact is formed in the G/MoS2 heterostructure with the Schottky barrier height of 0.49 eV. Furthermore, both Schottky contact and Schottky barrier height in the G/MoS2 heterostructure could be controlled by the applied electric field. If a positive electric field of 4 V/nm is applied to the system, a transformation from the n-type Schottky contact to the p-type one was observed, whereas the system keeps an n-type Schottky contact when a negative electric field is applied. Our results may provide helpful information to design, fabricate, and understand the physics mechanism in the graphene-based two-dimensional van der Waals heterostructures like as G/MoS2 heterostructure.

Ferroelectric-Driven Performance Enhancement of Graphene Field-Effect Transistors Based on Vertical Tunneling Heterostructures.

PubMed

Yuan, Shuoguo; Yang, Zhibin; Xie, Chao; Yan, Feng; Dai, Jiyan; Lau, Shu Ping; Chan, Helen L W; Hao, Jianhua

2016-12-01

A vertical graphene heterostructure field-effect transistor (VGHFET) using an ultrathin ferroelectric film as a tunnel barrier is developed. The heterostructure is capable of providing new degrees of tunability and functionality via coupling between the ferroelectricity and the tunnel current of the VGHFET, which results in a high-performance device. The results pave the way for developing novel atomic-scale 2D heterostructures and devices. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Role of interfacial transition layers in VO2/Al2O3 heterostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhou, Honghui; Chisholm, Matthew F; Yang, Tsung-Han

2011-01-01

Epitaxial VO2 films grown by pulsed laser deposition (PLD) on c-cut sapphire substrates ((0001) Al2O3) were studied by aberration-corrected scanning transmission electron microscopy (STEM). A number of film/substrate orientation relationships were found and are discussed in the context of the semiconductor-metal transition (SMT) characteristics. A structurally and electronically modified buffer layer was revealed on the interface and was attributed to the interface free-energy minimization process of accommodating the symmetry mismatch between the substrate and the film. This interfacial transition layer is expected to affect the SMT behavior when the interfacial region is a significant fraction of the VO2 film thickness.

Silicon superlattices: Theory and application to semiconductor devices

NASA Technical Reports Server (NTRS)

Moriarty, J. A.

1981-01-01

Silicon superlattices and their applicability to improved semiconductor devices were studied. The device application potential of the atomic like dimension of III-V semiconductor superlattices fabricated in the form of ultrathin periodically layered heterostructures was examined. Whether this leads to quantum size effects and creates the possibility to alter familiar transport and optical properties over broad physical ranges was studied. Applications to improved semiconductor lasers and electrondevices were achieved. Possible application of silicon sperlattices to faster high speed computing devices was examined. It was found that the silicon lattices show features of smaller fundamental energyband gaps and reduced effective masses. The effects correlate strongly with both the chemical and geometrical nature of the superlattice.

Simulation of electron transport in GaAs/AlAs superlattices with a small number of periods for the THz frequency range

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pavelyev, D. G., E-mail: pavelev@rf.unn.ru, E-mail: obolensk@rf.unn.ru; Vasilev, A. P., E-mail: vasiljev@mail.ioffe.ru; Kozlov, V. A., E-mail: kozlov@ipm.sci-nnov.ru

2016-11-15

The electron transport in superlattices based on GaAs/AlAs heterostructures with a small number of periods (6 periods) is calculated by the Monte Carlo method. These superlattices are used in terahertz diodes for the frequency stabilization of quantum cascade lasers in the range up to 4.7 THz. The band structure of superlattices with different numbers of AlAs monolayers is considered and their current–voltage characteristics are calculated. The calculated current–voltage characteristics are compared with the experimental data. The possibility of the efficient application of these superlattices in the THz frequency range is established both theoretically and experimentally.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Osada, Motoki; Nishio, Kazunori; Hwang, Harold Y.

Here, we investigate the growth phase diagram of pseudobrookite Fe 2TiO 5 epitaxial thin films on LaAlO 3 (001) substrates using pulsed laser deposition. Control of the oxygen partial pressure and temperature during deposition enabled selective stabilization of (100)- and (230)-oriented films. In this regime, we find an optical gap of 2.1 eV and room temperature resistivity in the range of 20–80 Ω cm, which are significantly lower than α-Fe 2O 3, making Fe 2TiO 5 potentially an ideal inexpensive visible-light harvesting semiconductor. These results provide a basis to incorporate Fe 2TiO 5 in oxide heterostructures for photocatalytic and photoelectrochemicalmore » applications.« less

DFT study on the interfacial properties of vertical and in-plane BiOI/BiOIO3 hetero-structures.

PubMed

Dai, Wen-Wu; Zhao, Zong-Yan

2017-04-12

Composite photocatalysts with hetero-structures usually favor the effective separation of photo-generated carriers. In this study, BiOIO 3 was chosen to form a hetero-structure with BiOI, due to its internal polar field and good lattice matching with BiOI. The interfacial properties and band offsets were focused on and analyzed in detail by DFT calculations. The results show that the charge depletion and accumulation mainly occur in the region near the interface. This effect leads to an interfacial electric field and thus, the photo-generated electron-hole pairs can be easily separated and transferred along opposite directions at the interface, which is significant for the enhancement of the photocatalytic activity. Moreover, according to the analysis of band offsets, the vertical BiOI/BiOIO 3 belongs to the type-II hetero-structure, while the in-plane BiOI/BiOIO 3 belongs to the type-I hetero-structure. The former type of hetero-structure has more favorable effects to enhance the photocatalytic activity of BiOI than that of the latter type of hetero-structure. In the case of the vertical BiOI/BiOIO 3 hetero-structure, photo-generated electrons can move from the conduction band of BiOI to that of BiOIO 3 , while holes can move from the valence band of BiOIO 3 to that of BiOI under solar radiation. In addition, the introduced internal electric field functions as a selector that can promote the separation of photo-generated carriers, resulting in the higher photocatalytic quantum efficiency. These findings illustrate the underlying mechanism for the reported experiments, and can be used as a basis for the design of novel highly efficient composite photocatalysts with hetero-structures.

2D materials and van der Waals heterostructures.

PubMed

Novoselov, K S; Mishchenko, A; Carvalho, A; Castro Neto, A H

2016-07-29

The physics of two-dimensional (2D) materials and heterostructures based on such crystals has been developing extremely fast. With these new materials, truly 2D physics has begun to appear (for instance, the absence of long-range order, 2D excitons, commensurate-incommensurate transition, etc.). Novel heterostructure devices--such as tunneling transistors, resonant tunneling diodes, and light-emitting diodes--are also starting to emerge. Composed from individual 2D crystals, such devices use the properties of those materials to create functionalities that are not accessible in other heterostructures. Here we review the properties of novel 2D crystals and examine how their properties are used in new heterostructure devices. Copyright © 2016, American Association for the Advancement of Science.

Role of dual-laser ablation in controlling the Pb depletion in epitaxial growth of Pb(Zr0.52Ti0.48)O3 thin films with enhanced surface quality and ferroelectric properties

NASA Astrophysics Data System (ADS)

Mukherjee, Devajyoti; Hyde, Robert; Mukherjee, Pritish; Srikanth, Hariharan; Witanachchi, Sarath

2012-03-01

Pb depletion in Pb(Zr0.52Ti0.48)O3 (PZT) thin films has remained as a major setback in the growth of defect-free PZT thin films by pulsed laser ablation techniques. At low excimer (KrF) laser fluences, the high volatility of Pb in PZT leads to non-congruent target ablation and, consequently, non-stoichiometric films, whereas, at high laser fluences, the inherent ejection of molten droplets from the target leads to particulate laden films, which is undesirable in heterostructure growth. To overcome these issues, a dual-laser ablation (PLDDL) process that combines an excimer (KrF) laser and CO2 laser pulses was used to grow epitaxial PZT films on SrTiO3 (100) and MgO (100) substrates. Intensified-charge-coupled-detector (ICCD) images and optical emission spectroscopy of the laser-ablated plumes in PLDDL revealed a broader angular expansion and enhanced excitation of the ablated species as compared to those for single-laser ablation (PLDSL). This led to the growth of particulate-free PZT films with higher Pb content, better crystallinity, and lower surface roughness as compared to those deposited using PLDSL. For FE measurements, PZT capacitors were fabricated in situ using the latticed-matched metallic oxide, La0.7Sr0.3MnO3, as the top and bottom electrodes. PZT films deposited using PLDDL exhibited enhanced polarization for all driving voltages as compared to those deposited using PLDSL. A highest remanent polarization (Pr) of ˜91 μC/cm2 and low coercive field of ˜40 kV/cm was recorded at 9 V driving voltage. Fatigue characterization revealed that PZT films deposited using PLDDL showed unchanging polarization, even after 109 switching cycles.

Synthesis of Freestanding Single-crystal Perovskite Films and Heterostructures by Etching of Sacrificial Water-soluble Layers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lu, Di; Baek, David J.; Hong, Seung Sae

2016-08-22

The ability to create and manipulate materials in two-dimensional (2D) form has repeatedly had transformative impact on science and technology. In parallel with the exfoliation and stacking of intrinsically layered crystals, atomic-scale thin film growth of complex materials has enabled the creation of artificial 2D heterostructures with novel functionality and emergent phenomena, as seen in perovskite heterostructures. However, separation of these layers from the growth substrate has proven challenging, limiting the manipulation capabilities of these heterostructures with respect to exfoliated materials. Here we present a general method to create freestanding perovskite membranes. The key is the epitaxial growth of water-solublemore » Sr 3Al 2O 6 on perovskite substrates, followed by in situ growth of films and heterostructures. Millimetre-size single-crystalline membranes are produced by etching the Sr 3Al 2O 6 layer in water, providing the opportunity to transfer them to arbitrary substrates and integrate them with heterostructures of semiconductors and layered compounds.« less

A Facile Route for Patterned Growth of Metal-Insulator Carbon Lateral Junction through One-Pot Synthesis.

PubMed

Park, Beomjin; Park, Jaesung; Son, Jin Gyeong; Kim, Yong-Jin; Yu, Seong Uk; Park, Hyo Ju; Chae, Dong-Hun; Byun, Jinseok; Jeon, Gumhye; Huh, Sung; Lee, Seoung-Ki; Mishchenko, Artem; Hyun, Seung; Lee, Tae Geol; Han, Sang Woo; Ahn, Jong-Hyun; Lee, Zonghoon; Hwang, Chanyong; Novoselov, Konstantin S; Kim, Kwang S; Hong, Byung Hee; Kim, Jin Kon

2015-08-25

Precise graphene patterning is of critical importance for tailor-made and sophisticated two-dimensional nanoelectronic and optical devices. However, graphene-based heterostructures have been grown by delicate multistep chemical vapor deposition methods, limiting preparation of versatile heterostructures. Here, we report one-pot synthesis of graphene/amorphous carbon (a-C) heterostructures from a solid source of polystyrene via selective photo-cross-linking process. Graphene is successfully grown from neat polystyrene regions, while patterned cross-linked polystyrene regions turn into a-C because of a large difference in their thermal stability. Since the electrical resistance of a-C is at least 2 orders of magnitude higher than that for graphene, the charge transport in graphene/a-C heterostructure occurs through the graphene region. Measurement of the quantum Hall effect in graphene/a-C lateral heterostructures clearly confirms the reliable quality of graphene and well-defined graphene/a-C interface. The direct synthesis of patterned graphene from polymer pattern could be further exploited to prepare versatile heterostructures.

MoS 2-on-MXene Heterostructures as Highly Reversible Anode Materials for Lithium-Ion Batteries

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen, Chi; Xie, Xiuqiang; Anasori, Babak

Two-dimensional (2D) heterostructured materials, combining the collective advantages of individual building blocks and synergistic properties, have spurred great interest as a new paradigm in materials science. The family of 2D transition-metal carbides and nitrides, MXenes, has emerged as an attractive platform to construct functional materials with enhanced performance for diverse applications. Here, we synthesized 2D MoS 2-on-MXene heterostructures through in situ sulfidation of Mo 2TiC 2Tx MXene. The computational results show that MoS 2-on-MXene heterostructures have metallic properties. Moreover, the presence of MXene leads to enhanced Li and Li2S adsorption during the intercalation and conversion reactions. These characteristics render themore » as-prepared MoS 2-on-MXene heterostructures stable Li-ion storage performance. In conclusion, this work paves the way to use MXene to construct 2D heterostructures for energy storage applications.« less

Luminance mechanisms in green organic light-emitting devices fabricated utilizing tris(8-hydroxyquinoline)aluminum/4,7-diphenyl-1, 10-phenanthroline multiple heterostructures acting as an electron transport layer.

PubMed

Choo, Dong Chul; Seo, Su Yul; Kim, Tae Whan; Jin, You Young; Seo, Ji Hyun; Kim, Young Kwan

2010-05-01

The electrical and the optical properties in green organic light-emitting devices (OLEDs) fabricated utilizing tris(8-hydroxyquinoline)aluminum (Alq3)/4,7-diphenyl-1,10-phenanthroline (BPhen) multiple heterostructures acting as an electron transport layer (ETL) were investigated. The operating voltage of the OLEDs with a multiple heterostructure ETL increased with increasing the number of the Alq3/BPhen heterostructures because more electrons were accumulated at the Alq3/BPhen heterointerfaces. The number of the leakage holes existing in the multiple heterostructure ETL of the OLEDs at a low voltage range slightly increased due to an increase of the internal electric field generated from the accumulated electrons at the Alq3/BPhen heterointerface. The luminance efficiency of the OLEDs with a multiple heterostructure ETL at a high voltage range became stabilized because the increase of the number of the heterointerface decreased the quantity of electrons accumulated at each heterointerface.

Interlayer electron-phonon coupling in WSe2/hBN heterostructures

NASA Astrophysics Data System (ADS)

Jin, Chenhao; Kim, Jonghwan; Suh, Joonki; Shi, Zhiwen; Chen, Bin; Fan, Xi; Kam, Matthew; Watanabe, Kenji; Taniguchi, Takashi; Tongay, Sefaattin; Zettl, Alex; Wu, Junqiao; Wang, Feng

2017-02-01

Engineering layer-layer interactions provides a powerful way to realize novel and designable quantum phenomena in van der Waals heterostructures. Interlayer electron-electron interactions, for example, have enabled fascinating physics that is difficult to achieve in a single material, such as the Hofstadter's butterfly in graphene/boron nitride (hBN) heterostructures. In addition to electron-electron interactions, interlayer electron-phonon interactions allow for further control of the physical properties of van der Waals heterostructures. Here we report an interlayer electron-phonon interaction in WSe2/hBN heterostructures, where optically silent hBN phonons emerge in Raman spectra with strong intensities through resonant coupling to WSe2 electronic transitions. Excitation spectroscopy reveals the double-resonance nature of such enhancement, and identifies the two resonant states to be the A exciton transition of monolayer WSe2 and a new hybrid state present only in WSe2/hBN heterostructures. The observation of an interlayer electron-phonon interaction could open up new ways to engineer electrons and phonons for device applications.

MoS 2-on-MXene Heterostructures as Highly Reversible Anode Materials for Lithium-Ion Batteries

DOE PAGES

Chen, Chi; Xie, Xiuqiang; Anasori, Babak; ...

2018-01-02

Two-dimensional (2D) heterostructured materials, combining the collective advantages of individual building blocks and synergistic properties, have spurred great interest as a new paradigm in materials science. The family of 2D transition-metal carbides and nitrides, MXenes, has emerged as an attractive platform to construct functional materials with enhanced performance for diverse applications. Here, we synthesized 2D MoS 2-on-MXene heterostructures through in situ sulfidation of Mo 2TiC 2Tx MXene. The computational results show that MoS 2-on-MXene heterostructures have metallic properties. Moreover, the presence of MXene leads to enhanced Li and Li2S adsorption during the intercalation and conversion reactions. These characteristics render themore » as-prepared MoS 2-on-MXene heterostructures stable Li-ion storage performance. In conclusion, this work paves the way to use MXene to construct 2D heterostructures for energy storage applications.« less

Heterostructured ZnS/InP nanowires for rigid/flexible ultraviolet photodetectors with enhanced performance.

PubMed

Zhang, Kai; Ding, Jia; Lou, Zheng; Chai, Ruiqing; Zhong, Mianzeng; Shen, Guozhen

2017-10-19

Heterostructured ZnS/InP nanowires, composed of single-crystalline ZnS nanowires coated with a layer of InP shell, were synthesized via a one-step chemical vapor deposition process. As-grown heterostructured ZnS/InP nanowires exhibited an ultrahigh I on /I off ratio of 4.91 × 10 3 , a high photoconductive gain of 1.10 × 10 3 , a high detectivity of 1.65 × 10 13 Jones and high response speed even in the case of very weak ultraviolet light illumination (1.87 μW cm -2 ). The values are much higher than those of previously reported bare ZnS nanowires owing to the formation of core/shell heterostructures. Flexible ultraviolet photodetectors were also fabricated with the heterostructured ZnS/InP nanowires, which showed excellent mechanical flexibility, electrical stability and folding endurance besides excellent photoresponse properties. The results elucidated that the heterostructured ZnS/InP nanowires could find good applications in next generation flexible optoelectronic devices.

Buried Craters In Isidis Planitia, Mars

NASA Astrophysics Data System (ADS)

Seabrook, A. M.; Rothery, D. A.; Wallis, D.; Bridges, J. C.; Wright, I. P.

We have produced a topographic map of Isidis Planitia, which includes the Beagle 2 landing site, using interpolated Mars Orbiter Laser Altimeter (MOLA) data from the Mars Global Surveyor (MGS) spacecraft currently orbiting Mars. MOLA data have a vertical precision of 37.5 cm, a footprint size of 130 m, an along-track shot spacing of 330 m, and an across-track spacing that is variable and may be several kilometres. This has revealed subtle topographic detail within the relatively smooth basin of Isidis Planitia. Analysis of this map shows apparent wrinkle ridges that could be the volcanic basement to the basin and also several circular depressions with diameters of several to tens of kilometres which we interpreted as buried impact craters, comparable to the so-called stealth craters recognised elsewhere in the northern lowlands of Mars[1]. Stealth craters are considered to be impact craters subjected to erosion and/or burial. Some of these features in Isidis have depressions that are on the order of tens metres lower than their rims and are very smooth, and so are often not visible in MGS Mars Orbiter Camera (MOC) or Viking images of the basin. The Isidis stealth craters are not restricted to the Hesperian Vastitas Borealis formations like those detected elsewhere in the northern lowlands by Kreslavsky and Head [1], but are also found in a younger Amazonian smooth plains unit. It is generally believed that Isidis Planitia has undergone one or more episodes of sedi- ment deposition, and so these buried craters most likely lie on an earlier surface, which could be the postulated volcanic basement to the basin. Analysis of the buried craters may give some understanding of the thickness, frequencies and ages of sedimentation episodes within the basin. This information will be important in developing a context in which information from the Beagle 2 lander can be analysed when it arrives on Mars in December 2003. [1] Kreslavsky M. A. and Head J. W. (2001) LPS XXXII

Heterostructure of ferromagnetic and ferroelectric materials with magneto-optic and electro-optic effects

NASA Technical Reports Server (NTRS)

Zou, Yingyin Kevin (Inventor); Jiang, Hua (Inventor); Li, Kewen Kevin (Inventor); Guo, Xiaomei (Inventor)

2012-01-01

A heterostructure of multiferroics or magnetoelectrics (ME) was disclosed. The film has both ferromagnetic and ferroelectric properties, as well as magneto-optic (MO) and electro-optic (EO) properties. Oxide buffer layers were employed to allow grown a cracking-free heterostructure a solution coating method.

Design lateral heterostructure of monolayer ZrS2 and HfS2 from first principles calculations

NASA Astrophysics Data System (ADS)

Yuan, Junhui; Yu, Niannian; Wang, Jiafu; Xue, Kan-Hao; Miao, Xiangshui

2018-04-01

The successful fabrication of two-dimensional lateral heterostructures (LHS's) has opened up unprecedented opportunities in material science and device physics. It is therefore highly desirable to search for more suitable materials to create such heterostructures for next-generation devices. Here, we investigate a novel lateral heterostructure composed of monolayer ZrS2 and HfS2 based on density functional theory. The phonon dispersion and ab initio molecular dynamics analysis indicate its good kinetic and thermodynamic stability. Remarkably, we find that these lateral heterostructures exhibit an indirect to direct bandgap transition, in contrast to the intrinsic indirect bandgap nature of ZrS2 and HfS2. The type-II alignment and chemical bonding across the interline have also been revealed. The tensile strain is proved to be an efficient way to modulate the band structure. Finally, we further discuss other three stable lateral heterostructures: (ZrSe2)2(HfSe2)2 LHS, (ZrS2)2(ZrSe2)2 LHS and (HfS2)2(HfSe2)2 LHS. Generally, the lateral heterostructures of monolayer ZrS2 and HfS2 are of excellent electrical properties, and may find potential applications for future electronic devices.

Lateral topological crystalline insulator heterostructure

NASA Astrophysics Data System (ADS)

Sun, Qilong; Dai, Ying; Niu, Chengwang; Ma, Yandong; Wei, Wei; Yu, Lin; Huang, Baibiao

2017-06-01

The emergence of lateral heterostructures fabricated by two-dimensional building blocks brings many exciting realms in material science and device physics. Enriching available nanomaterials for creating such heterostructures and enabling the underlying new physics is highly coveted for the integration of next-generation devices. Here, we report a breakthrough in lateral heterostructure based on the monolayer square transition-metal dichalcogenides MX2 (M  =  W, X  =  S/Se) modules. Our results reveal that the MX2 lateral heterostructure (1S-MX2 LHS) can possess excellent thermal and dynamical stability. Remarkably, the highly desired two-dimensional topological crystalline insulator phase is confirmed by the calculated mirror Chern number {{n}\\text{M}}=-1 . A nontrivial band gap of 65 meV is obtained with SOC, indicating the potential for room-temperature observation and applications. The topologically protected edge states emerge at the edges of two different nanoribbons between the bulk band gap, which is consistent with the mirror Chern number. In addition, a strain-induced topological phase transition in 1S-MX2 LHS is also revealed, endowing the potential utilities in electronics and spintronics. Our predictions not only introduce new member and vitality into the studies of lateral heterostructures, but also highlight the promise of lateral heterostructure as appealing topological crystalline insulator platforms with excellent stability for future devices.

Stacking orders induced direct band gap in bilayer MoSe2-WSe2 lateral heterostructures.

PubMed

Hu, Xiaohui; Kou, Liangzhi; Sun, Litao

2016-08-16

The direct band gap of monolayer semiconducting transition-metal dichalcogenides (STMDs) enables a host of new optical and electrical properties. However, bilayer STMDs are indirect band gap semiconductors, which limits its applicability for high-efficiency optoelectronic devices. Here, we report that the direct band gap can be achieved in bilayer MoSe2-WSe2 lateral heterostructures by alternating stacking orders. Specifically, when Se atoms from opposite layers are stacked directly on top of each other, AA and A'B stacked heterostructures show weaker interlayer coupling, larger interlayer distance and direct band gap. Whereas, when Se atoms from opposite layers are staggered, AA', AB and AB' stacked heterostructures exhibit stronger interlayer coupling, shorter interlayer distance and indirect band gap. Thus, the direct/indirect band gap can be controllable in bilayer MoSe2-WSe2 lateral heterostructures. In addition, the calculated sliding barriers indicate that the stacking orders of bilayer MoSe2-WSe2 lateral heterostructures can be easily formed by sliding one layer with respect to the other. The novel direct band gap in bilayer MoSe2-WSe2 lateral heterostructures provides possible application for high-efficiency optoelectronic devices. The results also show that the stacking order is an effective strategy to induce and tune the band gap of layered STMDs.

Strong magnetization and Chern insulators in compressed graphene/CrI 3 van der Waals heterostructures

NASA Astrophysics Data System (ADS)

Zhang, Jiayong; Zhao, Bao; Zhou, Tong; Xue, Yang; Ma, Chunlan; Yang, Zhongqin

2018-02-01

Graphene-based heterostructures are a promising material system for designing the topologically nontrivial Chern insulating devices. Recently, a two-dimensional monolayer ferromagnetic insulator CrI3 was successfully synthesized in experiments [B. Huang et al., Nature (London) 546, 270 (2017), 10.1038/nature22391]. Here, these two interesting materials are proposed to build a heterostructure (Gr /CrI3). Our first-principles calculations show that the system forms a van der Waals (vdW) heterostructure, which is relatively facilely fabricated in experiments. A Chern insulating state is acquired in the Gr /CrI3 heterostructure if the vdW gap is compressed to a distance between about 3.3 and 2.4 Å, corresponding to a required external pressure between about 1.4 and 18.3 GPa. Amazingly, very strong magnetization (about 150 meV) is found in graphene, induced by the substrate CrI3, despite the vdW interactions between them. A low-energy effective model is employed to understand the mechanism. The work functions, contact types, and band alignments of the Gr /CrI3 heterostructure system are also studied. Our work demonstrates that the Gr /CrI3 heterostructure is a promising system to observe the quantum anomalous Hall effect at high temperatures (up to 45 K) in experiments.

Nickel/Platinum Dual Silicide Axial Nanowire Heterostructures with Excellent Photosensor Applications.

PubMed

Wu, Yen-Ting; Huang, Chun-Wei; Chiu, Chung-Hua; Chang, Chia-Fu; Chen, Jui-Yuan; Lin, Ting-Yi; Huang, Yu-Ting; Lu, Kuo-Chang; Yeh, Ping-Hung; Wu, Wen-Wei

2016-02-10

Transition metal silicide nanowires (NWs) have attracted increasing attention as they possess advantages of both silicon NWs and transition metals. Over the past years, there have been reported with efforts on one silicide in a single silicon NW. However, the research on multicomponent silicides in a single silicon NW is still rare, leading to limited functionalities. In this work, we successfully fabricated β-Pt2Si/Si/θ-Ni2Si, β-Pt2Si/θ-Ni2Si, and Pt, Ni, and Si ternary phase axial NW heterostructures through solid state reactions at 650 °C. Using in situ transmission electron microscope (in situ TEM), the growth mechanism of silicide NW heterostructures and the diffusion behaviors of transition metals were systematically studied. Spherical aberration corrected scanning transmission electron microscope (Cs-corrected STEM) equipped with energy dispersive spectroscopy (EDS) was used to analyze the phase structure and composition of silicide NW heterostructures. Moreover, electrical and photon sensing properties for the silicide nanowire heterostructures demonstrated promising applications in nano-optoeletronic devices. We found that Ni, Pt, and Si ternary phase nanowire heterostructures have an excellent infrared light sensing property which is absent in bulk Ni2Si or Pt2Si. The above results would benefit the further understanding of heterostructured nano materials.

Measurement of Preheat and Shock Melting in Be Ablators During the First Few ns of the NIF Ignition Pulse

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bradley, D K; Prisbrey, S T; Page, R H

2008-05-28

We have developed a scaled hohlraum platform to experimentally measure preheat in ablator materials during the first few nanoseconds of the radiation drive proposed for ignition experiments at the National Ignition Facility [J. A. Paisner, J. D. Boyes, S. A. Kumpan, et al., Laser Focus World 30, 75 (1994)]. The platform design approximates the radiation environment of the pole of the capsule by matching both the laser spot intensity and illuminated hohlraum wall fraction in scaled halfraums driven by the OMEGA laser system [T. R. Boehly, D. L. Brown, R. S. Craxton, et al., Optics Communications 133, 495 (1997)]. Amore » VISAR reflecting from the rear surface of the sample was used to measure sample motion prior to shock breakout. The experiments show that the first {approx}20 {micro}m of a Be ablator will be melted by radiation preheat, with subsequent material melted by the initial shock, in agreement with simulations. The experiments also show no evidence of anomalous heating of buried high-z doped layers in the ablator.« less

Investigation of the hydrodynamics and emission of a laser heated tamped high-Z target

NASA Astrophysics Data System (ADS)

Gray, William J.; Foord, Mark E.; Schneider, Marilyn B.; Barrios, Maria A.; Brown, Greg V.; Heeter, Robert F.; Jarrott, L. Charlie; Liedahl, Duane A.; Marley, Ed V.; Mauche, Chris W.; Widmann, Klaus

2018-06-01

We investigate the hydrodynamic expansion and x-ray emission of a laser-heated buried-layer target. This work is motivated by our interest in developing an experimental platform for probing plasma properties under relatively uniform conditions, such as ionization and equation of state. Targets consist of a few thousand angstrom-thick layer of material, embedded in a few microns of the tamper material (typically beryllium), which are irradiated on both sides by an intense few-nanosecond laser pulse. The expansion and emission of our target, composed of a homogeneous mixture of iron, vanadium, and gold, are simulated using the 2-D LASNEX code. Reasonable agreement is found with the time history of the x-ray emission traces (DANTE). Both experiments and simulations exhibit an interesting reduction in the radial size of the emission region with time, as measured using face-on imaging. This is shown to be due to the ablation of the beryllium tamper, which affects the radial confinement of the embedded target. Simulations using a larger diameter beryllium tamper are found to mitigate this effect, improving the one-dimensionality of the expansion.

Nanoscale effects on the thermal and mechanical properties of AlGaAs/GaAs quantum well laser diodes: influence on the catastrophic optical damage

NASA Astrophysics Data System (ADS)

Souto, Jorge; Pura, José Luis; Jiménez, Juan

2017-06-01

In this work we study the catastrophic optical damage (COD) of graded-index separate confinement heterostructure quantum well (QW) laser diodes based on AlGaAs/GaAs. The emphasis is placed on the impact that the nanoscale physical properties have on the operation and degradation of the active layers of these devices. When these laser diodes run in continuous-wave mode with high internal optical power densities, the QW and guide layers can experiment very intense local heating phenomena that lead to device failure. A thermo-mechanical model has been set up to study the mechanism of degradation. This model has been solved by applying finite element methods. A variety of physical factors related to the materials properties, which play a paramount role in the laser degradation process, have been considered. Among these, the reduced thicknesses of the QW and the guides lead to thermal conductivities smaller than the bulk figures, which are further reduced as extended defects develop in these layers. This results in a progressively deteriorating thermal management in the device. To the best of our knowledge, this model for laser diodes is the first one to have taken into account low scale mechanical effects that result in enhanced strengths in the structural layers. Moreover, the consequences of these conflicting size-dependent properties on the thermo-mechanical behaviour on the route to COD are examined. Subsequently, this approach opens the possibility of taking advantage of these properties in order to design robust diode lasers (or other types of power devices) in a controlled manner.

Lasing in a single nanowire with quantum dots

NASA Astrophysics Data System (ADS)

Tatebayashi, Jun; Arakawa, Yasuhiko

2017-02-01

Nanowire (NW) lasers have recently attracted increasing attention as ultra-small, highly-efficient coherent light emitters in the fields of nanophotonics, nano-optics and nanobiotechnology. Although there have been several demonstrations of single NW lasers utilizing bulk materials, it is crucial to incorporate lower-dimensional quantum nanostructures into the NW in order to achieve superior device performance with respect to threshold current, differential gain, modulation bandwidth and temperature sensitivity. The quantum dot (QD) is a useful and essential nanostructure that can meet these requirements. In this presentation, we will talk about our recent research activity regarding room temperature lasing of a single GaAs NW containing 50-stacked In0.2Ga0.8As/GaAs QDs. The NW cavities consist of multiple In0.2Ga0.8As/GaAs heterostructures acting as a QD active material, which are grown on shallow (<45 nm) GaAs core NWs and followed by GaAs/Al0.1Ga0.9As/GaAs core/shell/cap structures. Lasing oscillation is achieved at the emission wavelength of 900 nm by properly designing the NW cavity and tailoring the emission energy of each QD to enhance the optical gain. Obtained threshold pump pulse fluence is 179 μJ/cm2 at room temperature and the characteristics temperature is 133K which is higher than that of conventional bulk NW lasers. Our demonstration paves the way toward ultra-small lasers with extremely low-power consumption for integrated photonic systems. Furthermore, we will discuss our recent results on the demonstration of several types of NWQD lasers in order to improve the device performance of the NWQD lasers.

X-ray photoelectron spectroscopy investigations of band offsets in Ga0.02Zn0.98O/ZnO heterojunction for UV photodetectors

NASA Astrophysics Data System (ADS)

Singh, Karmvir; Rawal, Ishpal; Punia, Rajesh; Dhar, Rakesh

2017-10-01

Here, we report the valence and conduction band offset measurements in pure ZnO and the Ga0.02Zn0.98O/ZnO heterojunction by X-Ray photoelectron spectroscopy studies for UV photodetector applications. For detailed investigations on the band offsets and UV photodetection behavior of Ga0.02Zn0.98O/ZnO heterostructures, thin films of pristine ZnO, Ga-doped ZnO (Ga0.02Zn0.98O), and heterostructures of Ga-doped ZnO with ZnO (Ga0.02Zn0.98O/ZnO) were deposited using a pulsed laser deposition technique. The deposited thin films were characterized by X-ray diffraction, atomic force microscopy, and UV-Vis spectroscopy. X-ray photoelectron spectroscopy studies were carried out on all the thin films for the investigation of valence and conduction band offsets. The valence band was found to be shifted by 0.28 eV, while the conduction band has a shifting of -0.272 eV in the Ga0.02Zn0.98O/ZnO heterojunction as compared to pristine ZnO thin films. All the three samples were analyzed for photoconduction behavior under UVA light of the intensity of 3.3 mW/cm2, and it was observed that the photoresponse of pristine ZnO (19.75%) was found to increase with 2 wt. % doping of Ga (22.62%) and heterostructured thin films (29.10%). The mechanism of UV photodetection in the deposited samples has been discussed in detail, and the interaction of chemisorbed oxygen on the ZnO surface with holes generated by UV light exposure has been the observed mechanism for the change in electrical conductivity responsible for UV photoresponse on the present deposited ZnO films.

Biological Observations on Aedes Seatoi Huang in Thailand with Notes on Rural Aedes Aegypti (L.) and Other Stegomyia Populations

DTIC Science & Technology

1972-03-15

distribution is herein extended by 6 provinces : Ang Thong, Chiang Mai , Lop Buri, Nakhon Sawan, Prachin Buri and Sara Buri (FIG. 1). These new...of Thailand : 1. Ang Thong. 2. Chiang Mai . 3. Chon Buri. 4. Kanchanaburi. 5. Lop Buri. 6. Nakhon Sawan. 7. Prachin Buri. 8. Sara Buri. Provinces

Low Power Consumption Substrate-Emitting DFB Quantum Cascade Lasers.

PubMed

Liu, Chuan-Wei; Zhang, Jin-Chuan; Jia, Zhi-Wei; Zhuo, Ning; Zhai, Shen-Qiang; Wang, Li-Jun; Liu, Jun-Qi; Liu, Shu-Man; Liu, Feng-Qi; Wang, Zhan-Guo

2017-09-02

In the present work, an ultra-low power consumption substrate-emitting distributed feedback (DFB) quantum cascade laser (QCL) was developed. The continuous-wave (CW) threshold power dissipation is reduced to 0.43 W at 25 °C by shortening the cavity length to 0.5 mm and depositing high-reflectivity (HR) coating on both facets. As far as we know, this is the recorded threshold power dissipation of QCLs in the same conditions. Single-mode emission was achieved by employing a buried second-order grating. Mode-hop free emission can be observed within a wide temperature range from 15 to 105 °C in CW mode. The divergence angles are 22.5 o and 1.94 o in the ridge-width direction and cavity-length direction, respectively. The maximum optical power in CW operation was 2.4 mW at 25 °C, which is sufficient to spectroscopy applications.

Low Power Consumption Substrate-Emitting DFB Quantum Cascade Lasers

NASA Astrophysics Data System (ADS)

Liu, Chuan-Wei; Zhang, Jin-Chuan; Jia, Zhi-Wei; Zhuo, Ning; Zhai, Shen-Qiang; Wang, Li-Jun; Liu, Jun-Qi; Liu, Shu-Man; Liu, Feng-Qi; Wang, Zhan-Guo

2017-09-01

In the present work, an ultra-low power consumption substrate-emitting distributed feedback (DFB) quantum cascade laser (QCL) was developed. The continuous-wave (CW) threshold power dissipation is reduced to 0.43 W at 25 °C by shortening the cavity length to 0.5 mm and depositing high-reflectivity (HR) coating on both facets. As far as we know, this is the recorded threshold power dissipation of QCLs in the same conditions. Single-mode emission was achieved by employing a buried second-order grating. Mode-hop free emission can be observed within a wide temperature range from 15 to 105 °C in CW mode. The divergence angles are 22.5o and 1.94o in the ridge-width direction and cavity-length direction, respectively. The maximum optical power in CW operation was 2.4 mW at 25 °C, which is sufficient to spectroscopy applications.

Two-Dimensional Heterostructure as a Platform for Surface-Enhanced Raman Scattering.

PubMed

Tan, Yang; Ma, Linan; Gao, Zhibin; Chen, Ming; Chen, Feng

2017-04-12

Raman enhancement on a flat nonmetallic surface has attracted increasing attention, ever since the discovery of graphene enhanced Raman scattering. Recently, diverse two-dimensional layered materials have been applied as a flat surface for the Raman enhancement, attributed to different mechanisms. Looking beyond these isolated materials, atomic layers can be reassembled to design a heterostructure stacked layer by layer with an arbitrary chosen sequence, which allows the flow of charge carriers between neighboring layers and offers novel functionalities. Here, we demonstrate the heterostructure as a novel Raman enhancement platform. The WSe 2 (W) monolayer and graphene (G) were stacked together to form a heterostructure with an area of 10 mm × 10 mm. Heterostructures with different stacked structuress are used as platforms for the enhanced Raman scattering, including G/W, W/G, G/W/G/W, and W/G/G/W. On the surface of the heterostructure, the intensity of the Raman scattering is much stronger compared with isolated layers, using the copper phthalocyanine (CuPc) molecule as a probe. It is found that the Raman enhancement effect on heterostructures depends on stacked methods. Phonon modes of CuPc have the strongest enhancement on G/W. W/G and W/G/G/W have a stronger enhancement than that on the isolated WSe 2 monolayer, while lower than the graphene monolayer. The G/W/G/W/substrate demonstrated a comparable Raman enhancement effect than the G/W/substrate. These differences are due to the different interlayer couplings in heterostructures related to electron transition probability rates, which are further proved by first-principle calculations and probe-pump measurements.

Electronic Transport in Ultrathin Heterostructures.

DTIC Science & Technology

1981-10-01

heterostructures, superlattices, diffusion-enhanced disorder, transport properties, molecular beam epitaxy (MBE), photoluminescence, optical absorption...tion of single and multilayer GatlAs/GaAs heterostructures by metalorganic chemical vapor deposition (MJCVD) and molecular beam epitaxy (MBE) has...fundamental nature of these clusters and their relevance to other epitaxial techniques such as molecular beam epitaxy (MBE). To further varify or

Degradation of Si/Ge core/shell nanowire heterostructures during lithiation and delithiation at 0.8 and 20 A g-1.

PubMed

Kim, Dongheun; Li, Nan; Sheehan, Chris J; Yoo, Jinkyoung

2018-04-26

Si/Ge core/shell nanowire heterostructures have been expected to provide high energy and power densities for lithium ion battery anodes due to the large capacity of Si and the high electrical and ionic conductivities of Ge. Although the battery anode performances of Si/Ge core/shell nanowire heterostructures have been characterized, the degradation of Si/Ge core/shell nanowire heterostructures has not been thoroughly investigated. Here we report the compositional and structural changes of the Si/Ge core/shell nanowire heterostructure over cycling of lithiation and delithiation at different charging rates. The Si/Ge core/shell nanowire heterostructure holds the core and shell structure at a charging rate of 0.8 A g-1 up to 50 cycles. On the other hand, compositional intermixing and loss of Si occur at a charging rate of 20 A g-1 within 50 cycles. The operation condition-dependent degradation provides a new aspect of materials research for the development of high performance lithium ion battery anodes with a long cycle life.

Synthesis of Metal-Oxide/Carbon-Fiber Heterostructures and Their Properties for Organic Dye Removal and High-Temperature CO2 Adsorption

NASA Astrophysics Data System (ADS)

Shao, Liangzhi; Nie, Shibin; Shao, Xiankun; Zhang, LinLin; Li, Benxia

2018-03-01

One-dimensional metal-oxide/carbon-fiber (MO/CF) heterostructures were prepared by a facile two-step method using the natural cotton as a carbon source the low-cost commercial metal salts as precursors. The metal oxide nanostructures were first grown on the cotton fibers by a solution chemical deposition, and the metal-oxide/cotton heterostructures were then calcined and carbonized in nitrogen atmosphere. Three typical MO/CF heterostructures of TiO2/CF, ZnO/CF, and Fe2O3/CF were prepared and characterized. The loading amount of the metal oxide nanostructures on carbon fibers can be tuned by controlling the concentration of metal salt in the chemical deposition process. Finally, the performance of the as-obtained MO/CF heterostructures for organic dye removal from water was tested by the photocatalytic degradation under a simulated sunlight, and their properties of high-temperature CO2 adsorption were predicted by the temperature programmed desorption. The present study would provide a desirable strategy for the synthesis of MO/CF heterostructures for various applications.

Synthesis of freestanding single-crystal perovskite films and heterostructures by etching of sacrificial water-soluble layers

DOE PAGES

Lu, Di; Baek, David J.; Hong, Seung Sae; ...

2016-09-12

Here, the ability to create and manipulate materials in two-dimensional (2D) form has repeatedly had transformative impact on science and technology. In parallel with the exfoliation and stacking of intrinsically layered crystals 1, 2, 3, 4, 5, atomic-scale thin film growth of complex materials has enabled the creation of artificial 2D heterostructures with novel functionality 6, 7, 8, 9 and emergent phenomena, as seen in perovskite heterostructures 10, 11, 12. However, separation of these layers from the growth substrate has proved challenging, limiting the manipulation capabilities of these heterostructures with respect to exfoliated materials. Here we present a general methodmore » to create freestanding perovskite membranes. The key is the epitaxial growth of water-soluble Sr 3Al 2O 6 on perovskite substrates, followed by in situ growth of films and heterostructures. Millimetre-size single-crystalline membranes are produced by etching the Sr 3Al 2O 6 layer in water, providing the opportunity to transfer them to arbitrary substrates and integrate them with heterostructures of semiconductors and layered compounds 13, 14.« less

Facile synthesis of hierarchical Ag3PO4/TiO2 nanofiber heterostructures with highly enhanced visible light photocatalytic properties

NASA Astrophysics Data System (ADS)

Xie, Jinlei; Yang, Yefeng; He, Haiping; Cheng, Ding; Mao, Minmin; Jiang, Qinxu; Song, Lixin; Xiong, Jie

2015-11-01

Heterostructured semiconductor nanostructures have provoked great interest in the areas of energy, environment and catalysis. Herein, we report a novel hierarchical Ag3PO4/TiO2 heterostructure consisting of nearly spherical Ag3PO4 particles firmly coupled on the surface of TiO2 nanofibers (NFs). The construction of Ag3PO4/TiO2 heterostructure with tailored morphologies, compositions and optical properties was simply achieved via a facile and green synthetic strategy involving the electrospinning and solution-based processes. Owing to the synergetic effects of the components, the resulting hybrid heterostructures exhibited much improved visible light photocatalytic performance, which could degrade the RhB dye completely in 7.5 min. In addition, the coupling of Ag3PO4 particles with UV-light-sensitive TiO2 NFs enabled full utilization of solar energy and less consumption of noble metals, significantly appealing for their practical use in new energy sources and environmental issues. The developed synthetic strategy was considered to be applicable for the rational design and construction of other heterostructured catalysts.

Self-assembly of electronically abrupt borophene/organic lateral heterostructures

PubMed Central

Liu, Xiaolong; Wei, Zonghui; Balla, Itamar; Mannix, Andrew J.; Guisinger, Nathan P.; Luijten, Erik; Hersam, Mark C.

2017-01-01

Two-dimensional boron sheets (that is, borophene) have recently been realized experimentally and found to have promising electronic properties. Because electronic devices and systems require the integration of multiple materials with well-defined interfaces, it is of high interest to identify chemical methods for forming atomically abrupt heterostructures between borophene and electronically distinct materials. Toward this end, we demonstrate the self-assembly of lateral heterostructures between borophene and perylene-3,4,9,10-tetracarboxylic dianhydride (PTCDA). These lateral heterostructures spontaneously form upon deposition of PTCDA onto submonolayer borophene on Ag(111) substrates as a result of the higher adsorption enthalpy of PTCDA on Ag(111) and lateral hydrogen bonding among PTCDA molecules, as demonstrated by molecular dynamics simulations. In situ x-ray photoelectron spectroscopy confirms the weak chemical interaction between borophene and PTCDA, while molecular-resolution ultrahigh-vacuum scanning tunneling microscopy and spectroscopy reveal an electronically abrupt interface at the borophene/PTCDA lateral heterostructure interface. As the first demonstration of a borophene-based heterostructure, this work will inform emerging efforts to integrate borophene into nanoelectronic applications. PMID:28261662

The indispensable role of the transversal spin fluctuations mechanism in laser-induced demagnetization of Co/Pt multilayers with nanoscale magnetic domains.

PubMed

Zhang, Wei; He, Wei; Peng, Li-Cong; Zhang, Ying; Cai, Jian-Wang; Evans, Richard F L; Zhang, Xiang-Qun; Cheng, Zhao-Hua

2018-07-06

The switching of magnetic domains induced by an ultrashort laser pulse has been demonstrated in nanostructured ferromagnetic films. This leads to the dawn of a new era in breaking the ultimate physical limit for the speed of magnetic switching and manipulation, which is relevant to current and future information storage. However, our understanding of the interactions between light and spins in magnetic heterostructures with nanoscale domain structures is still lacking. Here, both time-resolved magneto-optical Kerr effect experiments and atomistic simulations are carried out to investigate the dominant mechanism of laser-induced ultrafast demagnetization in [Co/Pt] 20 multilayers with nanoscale magnetic domains. It is found that the ultrafast demagnetization time remains constant with various magnetic configurations, indicating that the domain structures play a minor role in laser-induced ultrafast demagnetization. In addition, both in experiment and atomistic simulations, we find a dependence of ultrafast demagnetization time τ M on the laser fluence, which is in contrast to the observations of spin transport within magnetic domains. The remarkable agreement between experiment and atomistic simulations indicates that the local dissipation of spin angular momentum is the dominant demagnetization mechanism in this system. More interestingly, we made a comparison between the atomistic spin dynamic simulation and the longitudinal spin flip model, highlighting that the transversal spin fluctuations mechanism is responsible for the ultrafast demagnetization in the case of inhomogeneous magnetic structures. This is a significant advance in clarifying the microscopic mechanism underlying the process of ultrafast demagnetization in inhomogeneous magnetic structures.

Curved grating fabrication techniques for concentric-circle grating, surface-emitting semiconductor lasers

NASA Technical Reports Server (NTRS)

Jordan, Rebecca H.; King, Oliver; Wicks, Gary W.; Hall, Dennis G.; Anderson, Erik H.; Rooks, Michael J.

1993-01-01

We describe the fabrication and operational characteristics of a novel, surface-emitting semiconductor laser that makes use of a concentric-circle grating to both define its resonant cavity and to provide surface emission. A properly fabricated circular grating causes the laser to operate in radially inward- and outward-going circular waves in the waveguide, thus, introducing the circular symmetry needed for the laser to emit a beam with a circular cross-section. The basic circular-grating-resonator concept can be implemented in any materials system; an AlGaAs/GaAs graded-index, separate confinement heterostructure (GRINSCH), single-quantum-well (SQW) semiconductor laser, grown by molecular beam epitaxy (MBE), was used for the experiments discussed here. Each concentric-circle grating was fabricated on the surface of the AlGaAs/GaAs semiconductor laser. The circular pattern was first defined by electron-beam (e-beam) lithography in a layer of polymethylmethacrylate (PMMA) and subsequently etched into the semiconductor surface using chemically-assisted (chlorine) ion-beam etching (CAIBE). We consider issues that affect the fabrication and quality of the gratings. These issues include grating design requirements, data representation of the grating pattern, and e-beam scan method. We provide examples of how these techniques can be implemented and their impact on the resulting laser performance. A comparison is made of the results obtained using two fundamentally different electron-beam writing systems. Circular gratings with period lambda = 0.25 microns and overall diameters ranging from 80 microns to 500 microns were fabricated. We also report our successful demonstration of an optically pumped, concentric-circle grating, semiconductor laser that emits a beam with a far-field divergence angle that is less than one degree. The emission spectrum is quite narrow (less than 0.1 nm) and is centered at wavelength lambda = 0.8175 microns.

Quantum engineering of transistors based on 2D materials heterostructures

NASA Astrophysics Data System (ADS)

Iannaccone, Giuseppe; Bonaccorso, Francesco; Colombo, Luigi; Fiori, Gianluca

2018-03-01

Quantum engineering entails atom-by-atom design and fabrication of electronic devices. This innovative technology that unifies materials science and device engineering has been fostered by the recent progress in the fabrication of vertical and lateral heterostructures of two-dimensional materials and by the assessment of the technology potential via computational nanotechnology. But how close are we to the possibility of the practical realization of next-generation atomically thin transistors? In this Perspective, we analyse the outlook and the challenges of quantum-engineered transistors using heterostructures of two-dimensional materials against the benchmark of silicon technology and its foreseeable evolution in terms of potential performance and manufacturability. Transistors based on lateral heterostructures emerge as the most promising option from a performance point of view, even if heterostructure formation and control are in the initial technology development stage.

Effect of polymer residues on the electrical properties of large-area graphene–hexagonal boron nitride planar heterostructures

DOE PAGES

Voyloy, Dimitry; Lassiter, Matthew G.; Sokolov, Alexei P.; ...

2017-06-19

Polymer residue plays an important role in the performance of 2D heterostructured materials. Herein, we study the effect of polymer residual impurities on the electrical properties of graphene–boron nitride planar heterostructures. Large-area graphene (Gr) and hexagonal boron nitride (h-BN) monolayers were synthesized using chemical vapor deposition techniques. Atomic van-der-Waals heterostructure layers based on varied configurations of Gr and h-BN layers were assembled. The average interlayer resistance of the heterojunctions over a 1 cm 2 area for several planar heterostructure configurations was assessed by impedance spectroscopy and modeled by equivalent electrical circuits. As a result, conductive AFM measurements showed that themore » presence of polymer residues on the surface of the Gr and h-BN monolayers resulted in significant resistance deviations over nanoscale regions.« less

Superthin Solar Cells Based on AIIIBV/Ge Heterostructures

NASA Astrophysics Data System (ADS)

Pakhanov, N. A.; Pchelyakov, O. P.; Vladimirov, V. M.

2017-11-01

A comparative analysis of the prospects of creating superthin, light-weight, and highly efficient solar cells based on AIIIBV/InGaAs and AIIIBV/Ge heterostructures is performed. Technological problems and prospects of each variant are discussed. A method of thinning of AIIIBV/Ge heterostructures with the use of an effective temporary carrier is proposed. The method allows the process to be performed almost with no risk of heterostructure fracture, thinning of the Ge junction down to several tens of micrometers (or even several micrometers), significant enhancement of the yield of good structures, and also convenient and reliable transfer of thinned solar cells to an arbitrary light and flexible substrate. Such a technology offers a possibility of creating high-efficiency thin and light solar cells for space vehicles on the basis of mass-produced AIIIBV/Ge heterostructures.

Effect of polymer residues on the electrical properties of large-area graphene–hexagonal boron nitride planar heterostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Voyloy, Dimitry; Lassiter, Matthew G.; Sokolov, Alexei P.

Polymer residue plays an important role in the performance of 2D heterostructured materials. Herein, we study the effect of polymer residual impurities on the electrical properties of graphene–boron nitride planar heterostructures. Large-area graphene (Gr) and hexagonal boron nitride (h-BN) monolayers were synthesized using chemical vapor deposition techniques. Atomic van-der-Waals heterostructure layers based on varied configurations of Gr and h-BN layers were assembled. The average interlayer resistance of the heterojunctions over a 1 cm 2 area for several planar heterostructure configurations was assessed by impedance spectroscopy and modeled by equivalent electrical circuits. As a result, conductive AFM measurements showed that themore » presence of polymer residues on the surface of the Gr and h-BN monolayers resulted in significant resistance deviations over nanoscale regions.« less

Quantum engineering of transistors based on 2D materials heterostructures.

PubMed

Iannaccone, Giuseppe; Bonaccorso, Francesco; Colombo, Luigi; Fiori, Gianluca

2018-03-01

Quantum engineering entails atom-by-atom design and fabrication of electronic devices. This innovative technology that unifies materials science and device engineering has been fostered by the recent progress in the fabrication of vertical and lateral heterostructures of two-dimensional materials and by the assessment of the technology potential via computational nanotechnology. But how close are we to the possibility of the practical realization of next-generation atomically thin transistors? In this Perspective, we analyse the outlook and the challenges of quantum-engineered transistors using heterostructures of two-dimensional materials against the benchmark of silicon technology and its foreseeable evolution in terms of potential performance and manufacturability. Transistors based on lateral heterostructures emerge as the most promising option from a performance point of view, even if heterostructure formation and control are in the initial technology development stage.

Two-dimensional spinodal interface in one-step grown graphene-molybdenum carbide heterostructures

NASA Astrophysics Data System (ADS)

Qiao, Jia-Bin; Gong, Yue; Liu, Haiwen; Shi, Jin-An; Gu, Lin; He, Lin

2018-05-01

Heterostructures made by stacking different materials on top of each other are expected to exhibit unusual properties and new phenomena. Interface of the heterostructures plays a vital role in determining their properties. Here, we report the observation of a two-dimensional (2D) spinodal interface in graphene-molybdenum carbide (α -M o2C ) heterostructures, which arises from spinodal decomposition occurring at the heterointerface, by using scanning tunneling microscopy. Our experiment demonstrates that the 2D spinodal interface modulates graphene into whispering gallery resonant networks filled with quasibound states of massless Dirac fermions. Moreover, below the superconducting transition temperature of the underlying α -M o2C , the 2D spinodal interface behaves as disorders, resulting in the breakdown of the proximity-induced superconductivity in graphene. Our result sheds light on tuning properties of heterostructures based on interface engineering.

Controlled fabrication of photoactive copper oxide-cobalt oxide nanowire heterostructures for efficient phenol photodegradation.

PubMed

Shi, Wenwu; Chopra, Nitin

2012-10-24

Fabrication of oxide nanowire heterostructures with controlled morphology, interface, and phase purity is critical for high-efficiency and low-cost photocatalysis. Here, we have studied the formation of copper oxide-cobalt nanowire heterostructures by sputtering and subsequent air annealing to result in cobalt oxide (Co(3)O(4))-coated CuO nanowires. This approach allowed fabrication of standing nanowire heterostructures with tunable compositions and morphologies. The vertically standing CuO nanowires were synthesized in a thermal growth method. The shell growth kinetics of Co and Co(3)O(4) on CuO nanowires, morphological evolution of the shell, and nanowire self-shadowing effects were found to be strongly dependent on sputtering duration, air-annealing conditions, and alignment of CuO nanowires. Finite element method (FEM) analysis indicated that alignment and stiffness of CuO-Co nanowire heterostructures greatly influenced the nanomechanical aspects such as von Mises equivalent stress distribution and bending of nanowire heterostructures during the Co deposition process. This fundamental knowledge was critical for the morphological control of Co and Co(3)O(4) on CuO nanowires with desired interfaces and a uniform coating. Band gap energies and phenol photodegradation capability of CuO-Co(3)O(4) nanowire heterostructures were studied as a function of Co(3)O(4) morphology. Multiple absorption edges and band gap tailings were observed for these heterostructures, indicating photoactivity from visible to UV range. A polycrystalline Co(3)O(4) shell on CuO nanowires showed the best photodegradation performance (efficiency ~50-90%) in a low-powered UV or visible light illumination with a sacrificial agent (H(2)O(2)). An anomalously high efficiency (~67.5%) observed under visible light without sacrificial agent for CuO nanowires coated with thin (∼5.6 nm) Co(3)O(4) shell and nanoparticles was especially interesting. Such photoactive heterostructures demonstrate unique sacrificial agent-free, robust, and efficient photocatalysts promising for organic decontamination and environmental remediation.

Extension of spectral range of Peltier cooled photodetectors to 16 μm

NASA Astrophysics Data System (ADS)

Piotrowski, A.; Piotrowski, J.; Gawron, W.; Pawluczyk, J.; Pedzinska, M.

2009-05-01

We have developed various types of photodetectors operating without cryocooling. Initially, the devices were mostly used for uncooled detection of CO2 laser radiation. Over the years the performance and speed of response has been steadily improved. At present the uncooled or Peltier cooled photodetectors can be used for sensitive and fast response detection in the MWIR and LWIR spectral range. The devices have found important applications in IR spectrometry, quantum cascade laser based gas analyzers, laser radiation alerters and many other IR systems. Recent efforts were concentrated on the extension of useful spectral range to >13 μm, as required for its application in FTIR spectrometers. This was achieved with improved design of the active elements, use of monolithic optical immersion technology, enhanced absorption of radiation, dedicated electronics, series connection of small cells in series, and last but not least, applying more efficient Peltier coolers. Practical devices are based on the complex HgCdTe heterostructures grown on GaAs substrates with MOCVD technique with immersion lens formed by micromachining in the GaAs substrates. The results are very encouraging. The devices cooled with miniature 4 stage Peltier coolers mounted in TO-8 style housings show significant response at wavelength exceeding 16 μm.

Growth of GaAs “nano ice cream cones” by dual wavelength pulsed laser ablation

NASA Astrophysics Data System (ADS)

Schamp, C. T.; Jesser, W. A.; Shivaram, B. S.

2007-05-01

Harmonic generation crystals inherently offer the possibility of using multiple wavelengths of light in a single laser pulse. In the present experiment, the fundamental (1064 nm) and second harmonic (532 nm) wavelengths from an Nd:YAG laser are focused together on GaAs and GaSb targets for ablation. Incident energy densities up to about 45 J/cm 2 at 10 Hz with substrate temperatures between 25 and 600 °C for durations of about 60 s have been used in an ambient gas pressure of about 10 -6 Torr. The ablated material was collected on electron-transparent amorphous carbon films for TEM analysis. Apart from a high density of isolated nanocrystals, the most common morphology observed consists of a crystalline GaAs cone-like structure in contact with a sphere of liquid Ga, resembling an "ice cream cone", typically 50-100 nm in length. For all of the heterostuctures of this type, the liquid/solid/vacuum triple junction is found to correspond to the widest point on the cone. These heterostructures likely form by preferential evaporation of As from molten GaAs drops ablated from the target. The resulting morphology minimizes the interfacial and surface energies of the liquid Ga and solid GaAs.

Energy transfer dynamics in strongly inhomogeneous hot-dense-matter systems

DOE Office of Scientific and Technical Information (OSTI.GOV)

Stillman, C. R.; Nilson, P. M.; Sefkow, A. B.

Direct measurements of energy transfer across steep density and temperature gradients in a hot-dense-matter system are presented. Hot dense plasma conditions were generated by high-intensity laser irradiation of a thin-foil target containing a buried metal layer. Energy transfer to the layer was measured using picosecond time-resolved x-ray emission spectroscopy. Here, the data show two x-ray flashes in time. Fully explicit, coupled particle-in-cell and collisional-radiative atomic kinetics model predictions reproduce these observations, connecting the two x-ray flashes with staged radial energy transfer within the target.

Energy transfer dynamics in strongly inhomogeneous hot-dense-matter systems

DOE PAGES

Stillman, C. R.; Nilson, P. M.; Sefkow, A. B.; ...

2018-06-25

Direct measurements of energy transfer across steep density and temperature gradients in a hot-dense-matter system are presented. Hot dense plasma conditions were generated by high-intensity laser irradiation of a thin-foil target containing a buried metal layer. Energy transfer to the layer was measured using picosecond time-resolved x-ray emission spectroscopy. Here, the data show two x-ray flashes in time. Fully explicit, coupled particle-in-cell and collisional-radiative atomic kinetics model predictions reproduce these observations, connecting the two x-ray flashes with staged radial energy transfer within the target.

Temperature dependence of material gain of InGaAsP/InP nano-heterostructure

NASA Astrophysics Data System (ADS)

Yadav, Rashmi; Alvi, P. A.

2014-04-01

This paper deals with temperature dependent study on material gain of InGaAsP/InP lasing nano-heterostructure with in TE mode. The model is based on simple separate confinement heterostructure (SCH). Material gain for the structure has been simulated for below and above the room temperatures. Different behaviors of the material gain for both ranges of the temperature have been reported in this paper. The results obtained in the simulation of the heterostructures suggest that only the shift in maximum gain takes place that appears at the lasing wavelength ˜ 1.40 μm.

Graphene/CdTe heterostructure solar cell and its enhancement with photo-induced doping

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lin, Shisheng, E-mail: shishenglin@zju.edu.cn; Chen, Hongsheng; State Key Laboratory of Modern Optical Instrumentation, Zhejiang University, Hangzhou 310027

2015-11-09

We report a type of solar cell based on graphene/CdTe Schottky heterostructure, which can be improved by surface engineering as graphene is atomic thin. By coating a layer of ultrathin CdSe quantum dots onto graphene/CdTe heterostructure, the power conversion efficiency is increased from 2.08% to 3.10%. Photo-induced doping is mainly accounted for this enhancement, as evidenced by field effect transport, Raman, photoluminescence, and quantum efficiency measurements. This work demonstrates a feasible way of improving the performance of graphene/semiconductor heterostructure solar cells by combining one dimensional with two dimensional materials.

Efficient band structure modulations in two-dimensional MnPSe3/CrSiTe3 van der Waals heterostructures

NASA Astrophysics Data System (ADS)

Pei, Qi; Wang, Xiaocha; Zou, Jijun; Mi, Wenbo

2018-05-01

As a research upsurge, van der Waals (vdW) heterostructures give rise to numerous combined merits and novel applications in nanoelectronics fields. Here, we systematically investigate the electronic structure of MnPSe3/CrSiTe3 vdW heterostructures with various stacking patterns. Then, particular attention of this work is paid on the band structure modulations in MnPSe3/CrSiTe3 vdW heterostructures via biaxial strain or electric field. Under a tensile strain, the relative band edge positions of heterostructures transform from type-I (nested) to type-II (staggered). The relocation of conduction band minimum also brings about a transition from indirect to direct band gap. Under a compressive strain, the electronic properties change from semiconducting to metallic. The physical mechanism of strain-dependent band structure may be ascribed to the shifts of the energy bands impelled by different superposition of atomic orbitals. Meanwhile, our calculations manifest that band gap values of MnPSe3/CrSiTe3 heterostructures are insensitive to the electric field. Even so, by applying a suitable intensity of negative electric field, the band alignment transition from type-I to type-II can also be realized. The efficient band structure modulations via external factors endow MnPSe3/CrSiTe3 heterostructures with great potential in novel applications, such as strain sensors, photocatalysis, spintronic and photoelectronic devices.

Size-tunable band alignment and optoelectronic properties of transition metal dichalcogenide van der Waals heterostructures

NASA Astrophysics Data System (ADS)

Zhao, Yipeng; Yu, Wangbing; Ouyang, Gang

2018-01-01

2D transition metal dichalcogenide (TMDC)-based heterostructures exhibit several fascinating properties that can address the emerging market of energy conversion and storage devices. Current achievements show that the vertical stacked TMDC heterostructures can form type II band alignment and possess significant optoelectronic properties. However, a detailed analytical understanding of how to quantify the band alignment and band offset as well as the optimized power conversion efficiency (PCE) is still lacking. Herein, we propose an analytical model to exhibit the PCEs of TMDC van der Waals (vdW) heterostructures and explore the intrinsic mechanism of photovoltaic conversion based on the detailed balance principle and atomic-bond-relaxation correlation mechanism. We find that the PCE of monolayer MoS2/WSe2 can be up to 1.70%, and that of the MoS2/WSe2 vdW heterostructures increases with thickness, owing to increasing optical absorption. Moreover, the results are validated by comparing them with the available evidence, providing realistic efficiency targets and design principles. Highlights • Both electronic and optoelectronic models are developed for vertical stacked MoS2/WSe2 heterostructures. • The underlying mechanism on size effect of electronic and optoelectronic properties for vertical stacked MoS2/WSe2 heterostructures is clarified. • The macroscopically measurable quantities and the microscopical bond identities are connected.

Efficient band structure modulations in two-dimensional MnPSe3/CrSiTe3 van der Waals heterostructures.

PubMed

Pei, Qi; Wang, Xiaocha; Zou, Jijun; Mi, Wenbo

2018-05-25

As a research upsurge, van der Waals (vdW) heterostructures give rise to numerous combined merits and novel applications in nanoelectronics fields. Here, we systematically investigate the electronic structure of MnPSe 3 /CrSiTe 3 vdW heterostructures with various stacking patterns. Then, particular attention of this work is paid on the band structure modulations in MnPSe 3 /CrSiTe 3 vdW heterostructures via biaxial strain or electric field. Under a tensile strain, the relative band edge positions of heterostructures transform from type-I (nested) to type-II (staggered). The relocation of conduction band minimum also brings about a transition from indirect to direct band gap. Under a compressive strain, the electronic properties change from semiconducting to metallic. The physical mechanism of strain-dependent band structure may be ascribed to the shifts of the energy bands impelled by different superposition of atomic orbitals. Meanwhile, our calculations manifest that band gap values of MnPSe 3 /CrSiTe 3 heterostructures are insensitive to the electric field. Even so, by applying a suitable intensity of negative electric field, the band alignment transition from type-I to type-II can also be realized. The efficient band structure modulations via external factors endow MnPSe 3 /CrSiTe 3 heterostructures with great potential in novel applications, such as strain sensors, photocatalysis, spintronic and photoelectronic devices.

Naturally formed ultrathin V2O5 heteroepitaxial layer on VO2/sapphire(001) film

NASA Astrophysics Data System (ADS)

Littlejohn, Aaron J.; Yang, Yunbo; Lu, Zonghuan; Shin, Eunsung; Pan, KuanChang; Subramanyam, Guru; Vasilyev, Vladimir; Leedy, Kevin; Quach, Tony; Lu, Toh-Ming; Wang, Gwo-Ching

2017-10-01

Vanadium dioxide (VO2) and vanadium pentoxide (V2O5) thin films change their properties in response to external stimuli such as photons, temperature, electric field and magnetic field and have applications in electronics, optical devices, and sensors. Due to the multiple valence states of V and non-stoichiometry in thin films, it is challenging to grow epitaxial, single-phase V-oxide on a substrate, or a heterostructure of two epitaxial V-oxides. We report the formation of a heterostructure consisting of a few nm thick ultrathin V2O5 epitaxial layer on pulsed laser deposited tens of nm thick epitaxial VO2 thin films grown on single crystal Al2O3(001) substrates without post annealing of the VO2 film. The simultaneous observation of the ultrathin epitaxial V2O5 layer and VO2 epitaxial film is only possible by our unique reflection high energy electron diffraction pole figure analysis. The out-of-plane and in-plane epitaxial relationships are V2O5[100]||VO2[010]||Al2O3[001] and V2O5[03 2 bar ]||VO2[100]||Al2O3[1 1 bar 0], respectively. The existence of the V2O5 layer on the surface of the VO2 film is also supported by X-ray photoelectron spectroscopy and Raman spectroscopy.

Ordered arrays of multiferroic epitaxial nanostructures.

PubMed

Vrejoiu, Ionela; Morelli, Alessio; Biggemann, Daniel; Pippel, Eckhard

2011-01-01

Epitaxial heterostructures combining ferroelectric (FE) and ferromagnetic (FiM) oxides are a possible route to explore coupling mechanisms between the two independent order parameters, polarization and magnetization of the component phases. We report on the fabrication and properties of arrays of hybrid epitaxial nanostructures of FiM NiFe(2)O(4) (NFO) and FE PbZr(0.52)Ti(0.48)O(3) or PbZr(0.2)Ti(0.8)O(3), with large range order and lateral dimensions from 200 nm to 1 micron. The structures were fabricated by pulsed-laser deposition. High resolution transmission electron microscopy and high angle annular dark-field scanning transmission electron microscopy were employed to investigate the microstructure and the epitaxial growth of the structures. Room temperature ferroelectric and ferrimagnetic domains of the heterostructures were imaged by piezoresponse force microscopy (PFM) and magnetic force microscopy (MFM), respectively. PFM and MFM investigations proved that the hybrid epitaxial nanostructures show ferroelectric and magnetic order at room temperature. Dielectric effects occurring after repeated switching of the polarization in large planar capacitors, comprising ferrimagnetic NiFe2O4 dots embedded in ferroelectric PbZr0.52Ti0.48O3 matrix, were studied. These hybrid multiferroic structures with clean and well defined epitaxial interfaces hold promise for reliable investigations of magnetoelectric coupling between the ferrimagnetic / magnetostrictive and ferroelectric / piezoelectric phases.

Optimization of structural and growth parameters of metamorphic InGaAs photovoltaic converters grown by MOCVD

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rybalchenko, D. V.; Mintairov, S. A.; Salii, R. A.

Metamorphic Ga{sub 0.76}In{sub 0.24}As heterostructures for photovoltaic converters are grown by the MOCVD (metal–organic chemical vapor deposition) technique. It is found that, due to the valence-band offset at the p-In{sub 0.24}Al{sub 0.76}As/p-In{sub 0.24}Ga{sub 0.76}As (wide-gap window/emitter) heterointerface, a potential barrier for holes arises as a result of a low carrier concentration in the wide-gap material. The use of an InAlGaAs solid solution with an Al content lower than 40% makes it possible to raise the hole concentration in the widegap window up ~9 × 10{sup 18} cm{sup –3} and completely remove the potential barrier, thereby reducing the series resistance ofmore » the device. The parameters of an GaInAs metamorphic buffer layer with a stepwise In content profile are calculated and its epitaxial growth conditions are optimized, which improves carrier collection from the n-GaInAs base region and provides a quantum efficiency of 83% at a wavelength of 1064 nm. Optimization of the metamorphic heterostructure of the photovoltaic converter results in that its conversion efficiency for laser light with a wavelength of 1064 nm is 38.5%.« less

Molecular Beam Epitaxy Integration of Magnetic Ferrites with Wide Bandgap Semiconductor 6Hydrogen-Silicon carbide for Next-generation Microwave and Spintronic Devices

NASA Astrophysics Data System (ADS)

Cai, Zhuhua

Ferrite/ferroelectric heterostructures have attracted much attention in recent years because of their unique ability to potentially enable dual magnetic and electric field tunability. The simultaneous magnetic and electric tunability in such structures can be applied in a wide range of microwave planar devices (e.g., tunable phase shifters, resonators, and delay lines) and spintronics (e.g., magnetic tunneling junctions for magnetic sensors and nonvolatile magnetic memories). However, the attempts to engineer ferrite/ferroelectric heterostructures to operate at the frequencies higher than 5 GHz are limited. Barium hexaferrite (BaM, BaFe12O19) is an ideal candidate for high frequency microwave device applications because of its strong uniaxial anisotropy (HA ˜17 kOe) and can be tuned to ferromagnetic resonance (FMR) at frequencies higher than 40 GHz with relatively small applied magnetic fields. Spinel ferrite Fe3O4 has a high Curie temperature of 858 K and is predicted to possess ˜ 100% spin polarization, which can lead to ultrahigh tunneling magnetoresistence even at room temperature. The performance of today's ferrite-based microwave communication and spintronic devices would be enhanced and next-generation monolithic microwave integrated circuit (MMIC) would be possible if ferrite/ferroelectric heterostructures can be integrated with wide band gap semiconductors (e.g., SiC or GaN), which can function in high-temperature, high-power, and high-frequency environments. The goal of this work is to use molecular beam epitaxy (MBE) to understand nucleation and film growth mechanisms needed to integrate magnetic ferrites (BaM and Fe3O4) with SiC, and subsequently understand the material chemistry and structure influences on forming functional interfaces (i.e., interfaces that enable effective ferrite/ferroelectric coupling). The study of chemistry, structure, and magnetic properties of three generations of BaM films grown by pulsed laser deposition shows a MBE-grown single crystalline MgO template promotes the c-axis alignment through formation of an oxygen bridge at the interface and minimizes the interface mixing, which enables the effective heteroepitaxy of device quality BaM on 6H-SiC. Epitaxial single crystalline BaM film with strong c-axis perpendicular alignment, high H A (16.2 kOe) and magnetization (4.1 kG) was also successfully grown by MBE for the first time on 6H-SiC. Through MBE, further study of the chemistry and structure evolution at the BaM//SiC interface suggests the 10 nm MgO template not only functions as a diffusion barrier, but also forms a spinel transition layer that is structurally similar to BaM. The high quality BaM film on SiC is compatible with MMIC and can also function as a magnetic layer in BaM/ferroelectric multiferroic heterostructures for electrostatic FMR tuning. Through MBE, single crystalline, epitaxial Fe3O4 (111) films and Fe 3O4/BaTiO3/Fe3O4 heterostructures were successfully integrated with 6H-SiC. The Fe3O4 film exhibits high strucutrual order with sharp interfaces and an easy axis in-plane magnetization with a coercivity of 200 Oe. In the Fe3O 4/BaTiO3/Fe3O4 heterostructure, the magnetoeletric coupling is demonstrated at room-temperature by an electric field induced magnetic anisotropy field change. The Fe3O4 /BaTiO3/Fe3O4 heterostructure has the potential application in multiferroic tunneling junction used in novel information storage. Understanding the ferrite growth mechanisms and interface functions through this research, is an important contribution toward the realization of a next-generation, multifunctional device.

Optical gain tuning within IR region in type-II In0.5Ga0.5As0.8P0.2/GaAs0.5Sb0.5 nano-scale heterostructure under external uniaxial strain

NASA Astrophysics Data System (ADS)

Singh, A. K.; Rathi, Amit; Riyaj, Md.; Bhardwaj, Garima; Alvi, P. A.

2017-11-01

Quaternary and ternary alloy semiconductors offer an extra degree of flexibility in terms of bandgap tuning. Modifications in the wave functions and alterations in optical transitions in quaternary and ternary QW (quantum well) heterostructures due to external uniaxial strain provide valuable insights on the characteristics of the heterostructure. This paper reports the optical gain in strained InGaAsP/GaAsSb type-II QW heterostructure (well width = 20 Å) under external uniaxial strain at room temperature (300 K). The entire heterostructure is supposed to be grown on InP substrate pseudomorphically. Band structure, wave functions, energy dispersion and momentum matrix elements of the heterostructure have been computed. 6 × 6 diagonalised k → ·p → Hamiltonian matrix of the system is evaluated and Luttinger-Kohn model has been applied for the band structure and wavefunction calculations. TE mode optical gain spectrum in the QW-heterostructure under uniaxial strain along [110] is calculated. Optical gain of the heterostructure as a function of 2D carrier density and temperature variation is investigated. The variation of the peak optical gain as a function of As and Sb fractions in InGaAsP as a barrier and GaAsSb as a well respectively is exhibited. For a charge carrier injection of 5 ×1012 /cm2 , the TE optical gain is 3952 cm-1 at room temperature under no external uniaxial strain. Significant increase in TE mode optical gain is observed under high external uniaxial strain (1, 5 and 10 GPa) along [110] within IR (Infrared region) region.

Cu2O-directed in situ growth of Au nanoparticles inside HKUST-1 nanocages.

PubMed

Liu, Yongxin; Liu, Ting; Tian, Long; Zhang, Linlin; Yao, Lili; Tan, Taixing; Xu, Jin; Han, Xiaohui; Liu, Dan; Wang, Cheng

2016-12-07

Controllable integration of metal nanoparticles (MNPs) and metal-organic frameworks (MOFs) is attracting considerable attention as the obtained composite materials always show synergistic effects in applications of catalysis, delivery, as well as sensing. Herein, a Cu 2 O-directed in situ growth strategy was developed to integrate Au nanoparticles and HKUST-1. In this strategy, Cu 2 O@HKUST-1 core-shell heterostructures, HKUST-1 nanocages, Cu 2 O@Au@HKUST-1 sandwich core-shell heterostructures and Au@HKUST-1 balls-in-cage heterostructures were successfully synthesized. Cu 2 O@HKUST-1 core-shell heterostructures were synthesized by soaking Cu 2 O nanocrystals in benzene-1,3,5-tricarboxylic acid solution. The well-defined Cu 2 O@HKUST-1 core-shell heterostructures were demonstrated to be dominated by the ratio of Cu 2+ cations to btc 3- ligands in solution during the period of HKUST-1 formation. Cu 2 O@Au@HKUST-1 sandwich core-shell or Au@HKUST-1 balls-in-cage heterostructures were obtained by impregnating HAuCl 4 into Cu 2 O@HKUST-1 core-shell heterostructures. Due to the porosity of HKUST-1 and reducibility of Cu 2 O, HAuCl 4 could pass through the HKUST-1 shell and be reduced by the Cu 2 O core in situ forming Au nanoparticles. Finally, CO oxidation reaction at high temperatures was carried out to assess the catalytic functionality of the obtained composite heterostructures. This strategy can circumvent some drawbacks of the existing approaches for integrating MNPs and MOFs, such as nonselective deposition of MNPs at the outer surface of the MOF matrices, extreme treatment conditions and additional surface modifications.

Review Article: Progress in fabrication of transition metal dichalcogenides heterostructure systems

PubMed Central

Dong, Rui; Kuljanishvili, Irma

2017-01-01

Transition metal dichalcogenide (TMDC) semiconductors have attracted significant attention because of their rich electronic/photonic properties and importance for fundamental research and novel device applications. These materials provide a unique opportunity to build up high quality and atomically sharp heterostructures because of the nature of weak van der Waals interlayer interactions. The variable electronic properties of TMDCs (e.g., band gap and their alignment) provide a platform for the design of novel electronic and optoelectronic devices. The integration of TMDC heterostructures into the semiconductor industry is presently hindered by limited options in reliable production methods. Many exciting properties and device architectures which have been studied to date are, in large, based on the exfoliation methods of bulk TMDC crystals. These methods are generally more difficult to consider for large scale integration processes, and hence, continued developments of different fabrication strategies are essential for further advancements in this area. In this review, the authors highlight the recent progress in the fabrication of TMDC heterostructures. The authors will review several methods most commonly used to date for controllable heterostructure formation. One of the focuses will be on TMDC heterostructures fabricated by thermal chemical vapor deposition methods which allow for the control over the resulting materials, individual layers and heterostructures. Another focus would be on the techniques for selective growth of TMDCs. The authors will discuss conventional and unconventional fabrication methods and their advantages and drawbacks and will provide some guidance for future improvements. Mask-assisted and mask-free methods will be presented, which include traditional lithographic techniques (photo- or e-beam lithography) and some unconventional methods such as the focus ion beam and the recently developed direct-write patterning approach, which are shown to be promising for the fabrication of quality TMDC heterostructures. PMID:29075580

Direct-Write Laser Grayscale Lithography for Multilayer Lead Zirconate Titanate Thin Films.

PubMed

Benoit, Robert R; Jordan, Delaney M; Smith, Gabriel L; Polcawich, Ronald G; Bedair, Sarah S; Potrepka, Daniel M

2018-05-01

Direct-write laser grayscale lithography has been used to facilitate a single-step patterning technique for multilayer lead zirconate titanate (PZT) thin films. A 2.55- -thick photoresist was patterned with a direct-write laser. The intensity of the laser was varied to create both tiered and sloped structures that are subsequently transferred into multilayer PZT(52/48) stacks using a single Ar ion-mill etch. Traditional processing requires a separate photolithography step and an ion mill etch for each layer of the substrate, which can be costly and time consuming. The novel process allows access to buried electrode layers in the multilayer stack in a single photolithography step. The grayscale process was demonstrated on three 150-mm diameter Si substrates configured with a 0.5- -thick SiO 2 elastic layer, a base electrode of Pt/TiO 2 , and a stack of four PZT(52/48) thin films of either 0.25- thickness per layer or 0.50- thickness per layer, and using either Pt or IrO 2 electrodes above and below each layer. Stacked capacitor structures were patterned and results will be reported on the ferroelectric and electromechanical properties using various wiring configurations and compared to comparable single layer PZT configurations.

Two-Dimensional Semiconductor Optoelectronics Based on van der Waals Heterostructures.

PubMed

Lee, Jae Yoon; Shin, Jun-Hwan; Lee, Gwan-Hyoung; Lee, Chul-Ho

2016-10-27

Two-dimensional (2D) semiconductors such as transition metal dichalcogenides (TMDCs) and black phosphorous have drawn tremendous attention as an emerging optical material due to their unique and remarkable optical properties. In addition, the ability to create the atomically-controlled van der Waals (vdW) heterostructures enables realizing novel optoelectronic devices that are distinct from conventional bulk counterparts. In this short review, we first present the atomic and electronic structures of 2D semiconducting TMDCs and their exceptional optical properties, and further discuss the fabrication and distinctive features of vdW heterostructures assembled from different kinds of 2D materials with various physical properties. We then focus on reviewing the recent progress on the fabrication of 2D semiconductor optoelectronic devices based on vdW heterostructures including photodetectors, solar cells, and light-emitting devices. Finally, we highlight the perspectives and challenges of optoelectronics based on 2D semiconductor heterostructures.

Synthesis, fabrication and characterization of Ge/Si axial nanowire heterostructure tunnel FETs

DOE Office of Scientific and Technical Information (OSTI.GOV)

Picraux, Samuel T; Dayeh, Shadi A

2010-01-01

Axial Ge/Si heterostructure nanowires allow energy band-edge engineering along the axis of the nanowire, which is the charge transport direction, and the realization of asymmetric devices for novel device architectures. This work reports on two advances in the area of heterostructure nanowires and tunnel FETs: (i) the realization of 100% compositionally modulated Si/Ge axial heterostructure nanowires with lengths suitable for device fabrication and (ii) the design and implementation of Schottky barrier tunnel FETs on these nanowires for high-on currents and suppressed ambipolar behavior. Initial prototype devices resulted in a current drive in excess of 100 {micro}A/{micro}m (I/{pi}D) and 10{sup 5}more » I{sub on}/I{sub off} ratios. These results demonstrate the potential of such asymmetric heterostructures (both in the semiconductor channel and metal-semiconductor barrier heights) for low-power and high performance electronics.« less

Comparative analysis of hole transport in compressively strained InSb and Ge quantum well heterostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Agrawal, Ashish; Barth, Michael; Madan, Himanshu

2014-08-04

Compressively strained InSb (s-InSb) and Ge (s-Ge) quantum well heterostructures are experimentally studied, with emphasis on understanding and comparing hole transport in these two-dimensional confined heterostructures. Magnetotransport measurements and bandstructure calculations indicate 2.5× lower effective mass for s-InSb compared to s-Ge quantum well at 1.9 × 10{sup 12} cm{sup –2}. Advantage of strain-induced m* reduction is negated by higher phonon scattering, degrading hole transport at room temperature in s-InSb quantum well compared to s-Ge heterostructure. Consequently, effective injection velocity is superior in s-Ge compared to s-InSb. These results suggest s-Ge quantum well heterostructure is more favorable and promising p-channel candidate compared to s-InSbmore » for future technology node.« less

Two-Dimensional Semiconductor Optoelectronics Based on van der Waals Heterostructures

PubMed Central

Lee, Jae Yoon; Shin, Jun-Hwan; Lee, Gwan-Hyoung; Lee, Chul-Ho

2016-01-01

Two-dimensional (2D) semiconductors such as transition metal dichalcogenides (TMDCs) and black phosphorous have drawn tremendous attention as an emerging optical material due to their unique and remarkable optical properties. In addition, the ability to create the atomically-controlled van der Waals (vdW) heterostructures enables realizing novel optoelectronic devices that are distinct from conventional bulk counterparts. In this short review, we first present the atomic and electronic structures of 2D semiconducting TMDCs and their exceptional optical properties, and further discuss the fabrication and distinctive features of vdW heterostructures assembled from different kinds of 2D materials with various physical properties. We then focus on reviewing the recent progress on the fabrication of 2D semiconductor optoelectronic devices based on vdW heterostructures including photodetectors, solar cells, and light-emitting devices. Finally, we highlight the perspectives and challenges of optoelectronics based on 2D semiconductor heterostructures. PMID:28335321

Gas Sensing Properties of p-Co₃O₄/n-TiO₂ Nanotube Heterostructures.

PubMed

Alev, Onur; Kılıç, Alp; Çakırlar, Çiğdem; Büyükköse, Serkan; Öztürk, Zafer Ziya

2018-03-23

In this paper, we fabricated p-Co₃O₄/n-TiO₂ heterostructures and investigated their gas sensing properties. The structural and morphological characterization were performed by scanning electron microscopy (SEM), X-ray diffraction (XRD), and X-ray photoelectron spectroscopy analysis (XPS). The electrical properties of the heterostructure were studied within the temperature range from 293 K to 423 K. Changes in electrical properties and sensing behavior against reducing and oxidizing gases were attributed to the formation of p-n heterojunctions at the Co₃O₄ and TiO₂ interface. In comparison with sensing performed with pristine TiO₂ nanotubes (NTs), a significant improvement in H₂ sensing at 200 °C was observed, while the sensing response against NO₂ decreased for the heterostructures. Additionally, a response against toluene gas, in contrast to pristine TiO₂ NTs, appeared in the Co₃O₄/TiO₂ heterostructure samples.

Probing interlayer interactions in WS2 -graphene van der Waals heterostructures

NASA Astrophysics Data System (ADS)

Chung, Ting Fung; Yuan, Long; Huang, Libai; Chen, Yong P.

Two-dimensional crystals based van der Waals coupled heterostructures are of interest owing to their potential applications for flexible and transparent electronics and optoelectronics. The interaction between the 2D layered crystals at the interfaces of these heterostructures is crucial in determining the overall performance and is strongly affected by contamination and interfacial strain. We have fabricated heterostructures consisting of atomically thin exfoliated WS2 and chemical-vapor-deposited (CVD) graphene, and studied the interaction and coupling between the WS2 and graphene using atomic force microscopy (AFM), Raman spectroscopy and femtosecond transient absorption measurement (TAM). Information from Raman-active phonon modes allows us to estimate charge doping in graphene and interfacial strain on the crystals. Spatial imaging probed by TAM can be correlated to the heterostructure surface morphology measured by AFM and Raman maps of graphene and WS2, showing how the interlayer coupling alters exciton decay dynamics quantitatively.

Photocatalytic reduction of CO2 by employing ZnO/Ag1-xCux/CdS and related heterostructures

NASA Astrophysics Data System (ADS)

Lingampalli, S. R.; Ayyub, Mohd Monis; Magesh, Ganesan; Rao, C. N. R.

2018-01-01

In view of the great importance of finding ways to reduce CO2 by using solar energy, we have examined the advantage of employing heterostructures containing bimetallic alloys for the purpose. This choice is based on the knowledge that metals such as Pt reduce CO2, although the activity may not be considerable. Our studies on the reduction of CO2 by ZnO/M/CdS (M = Ag, Au, Ag1-xAux, Ag1-xCux) heterostructures in liquid phase have shown good results specially in the case of ZnO/Ag1-xCux/CdS, reaching a CO production activity of 327.4 μmol h-1 g-1. The heterostructures also reduce CO2 in the gas-phase although the production activity is not high. Some of the heterostructures exhibit reduction of CO2 even in the absence of a sacrificial reagent.

Synthesis of In2O3 nanowire-decorated Ga2O3 nanobelt heterostructures and their electrical and field-emission properties.

PubMed

Lin, Jing; Huang, Yang; Bando, Yoshio; Tang, Chengchun; Li, Chun; Golberg, Dmitri

2010-04-27

We report on the synthesis of In2O3 nanowire-decorated Ga2O3 nanobelt heterostructures via a simple catalyst-free method. A typical heterostructure, where an In2O3 nanowire forms a sort of a "dorsal fin" on the Ga2O3 nanobelt, exhibits the T-shaped cross-section. The structure, electrical porperties, and field-emission properties of this material are systematically investigated. The heterostructures possess a typical n-type semiconducting behavior with enhanced conductivity. Field-emission measurements show that they have a low turn-on field (approximately 1.31 V/microm) and a high field-enhancement factor (over 4000). The excellent field-emission characteristics are attributed to their special geometry and good electrical properties. The present In2O3-decorated Ga2O3 heterostructures are envisaged to be decent field-emitters useful in advanced electronic and optoelectronic nanodevices.

Band Alignment in MoS2/WS2 Transition Metal Dichalcogenide Heterostructures Probed by Scanning Tunneling Microscopy and Spectroscopy.

PubMed

Hill, Heather M; Rigosi, Albert F; Rim, Kwang Taeg; Flynn, George W; Heinz, Tony F

2016-08-10

Using scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS), we examine the electronic structure of transition metal dichalcogenide heterostructures (TMDCHs) composed of monolayers of MoS2 and WS2. STS data are obtained for heterostructures of varying stacking configuration as well as the individual monolayers. Analysis of the tunneling spectra includes the influence of finite sample temperature, yield information about the quasi-particle bandgaps, and the band alignment of MoS2 and WS2. We report the band gaps of MoS2 (2.16 ± 0.04 eV) and WS2 (2.38 ± 0.06 eV) in the materials as measured on the heterostructure regions and the general type II band alignment for the heterostructure, which shows an interfacial band gap of 1.45 ± 0.06 eV.

Engineering charge transport by heterostructuring solution-processed semiconductors

NASA Astrophysics Data System (ADS)

Voznyy, Oleksandr; Sutherland, Brandon R.; Ip, Alexander H.; Zhitomirsky, David; Sargent, Edward H.

2017-06-01

Solution-processed semiconductor devices are increasingly exploiting heterostructuring — an approach in which two or more materials with different energy landscapes are integrated into a composite system. Heterostructured materials offer an additional degree of freedom to control charge transport and recombination for more efficient optoelectronic devices. By exploiting energetic asymmetry, rationally engineered heterostructured materials can overcome weaknesses, augment strengths and introduce emergent physical phenomena that are otherwise inaccessible to single-material systems. These systems see benefit and application in two distinct branches of charge-carrier manipulation. First, they influence the balance between excitons and free charges to enhance electron extraction in solar cells and photodetectors. Second, they promote radiative recombination by spatially confining electrons and holes, which increases the quantum efficiency of light-emitting diodes. In this Review, we discuss advances in the design and composition of heterostructured materials, consider their implementation in semiconductor devices and examine unexplored paths for future advancement in the field.

Photocatalytic activity of Ag3PO4 nanoparticle/TiO2 nanobelt heterostructures

NASA Astrophysics Data System (ADS)

Liu, Ruoyu; Hu, Peiguang; Chen, Shaowei

2012-10-01

Heterostructures based on Ag3PO4 nanoparticles and TiO2 nanobelts were prepared by a coprecipitation method. The crystalline structures were characterized by X-ray diffraction measurements. Electron microscopic studies showed that the Ag3PO4 nanoparticles and TiO2 nanobelts were in intimate contact which might be exploited to facilitate charge transfer between the two semiconductor materials. In fact, the heterostructures exhibited markedly enhanced photocatalytic activity as compared with unmodified TiO2 nanobelts or commercial TiO2 colloids in the photodegradation of methyl orange under UV irradiation. This was accounted for by the improved efficiency of interfacial charge separation thanks to the unique alignments of their band structures. Remarkably, whereas the photocatalytic activity of the heterostructure was comparable to that of Ag3PO4 nanoparticles alone, the heterostructures exhibited significantly better stability and reusability in repeated tests than the Ag3PO4 nanoparticles.

High resistance ratio of bipolar resistive switching in a multiferroic/high-K Bi(Fe0.95Cr0.05)O3/ZrO2/Pt heterostructure

NASA Astrophysics Data System (ADS)

Dong, B. W.; Miao, Jun; Han, J. Z.; Shao, F.; Yuan, J.; Meng, K. K.; Wu, Y.; Xu, X. G.; Jiang, Y.

2018-03-01

An novel heterostructure composed of multiferroic Bi(Fe0.95Cr0.05)O3 (BFCO) and high-K ZrO2 (ZO) layers is investigated. Ferroelectric and electrical properties of the BFZO/ZO heterostructure have been investigated. A pronounced bipolar ferroelectric resistive switching characteristic was achieved in the heterostructure at room temperature. Interestingly, the BFCO/ZO structures exhibit a reproducible resistive switching with a high On/Off resistance ratio ∼2×103 and long retention time. The relationship between polarization and band structure at the interface of BFCO/ZO bilayer under the positive and negative sweepings has been discussed. As a result, the BFCO/ZO multiferroic/high-K heterostructure with high On/Off resistance ratio and long retention characterizes, exhibits a potential in future nonvolatile memory application.

Synthesis and electronic properties of Fe 2TiO 5 epitaxial thin films

DOE PAGES

Osada, Motoki; Nishio, Kazunori; Hwang, Harold Y.; ...

2018-05-02

Here, we investigate the growth phase diagram of pseudobrookite Fe 2TiO 5 epitaxial thin films on LaAlO 3 (001) substrates using pulsed laser deposition. Control of the oxygen partial pressure and temperature during deposition enabled selective stabilization of (100)- and (230)-oriented films. In this regime, we find an optical gap of 2.1 eV and room temperature resistivity in the range of 20–80 Ω cm, which are significantly lower than α-Fe 2O 3, making Fe 2TiO 5 potentially an ideal inexpensive visible-light harvesting semiconductor. These results provide a basis to incorporate Fe 2TiO 5 in oxide heterostructures for photocatalytic and photoelectrochemicalmore » applications.« less

Electronic structure and dynamics of thin Ge/GaAs(110) heterostructures

NASA Astrophysics Data System (ADS)

Haight, R.; Silberman, J. A.

1990-10-01

Using angle-resolved picosecond laser photoemission we have investigated both occupied and transiently excited empty states at the surface of Ge grown epitaxially on GaAs(110). We observe a normally unoccupied, Ge layer derived state whose separation from the valence-band maximum of the system is 700±50 meV at six monolayers Ge coverage. The evolution of the electronic structure is followed as a function of coverage and correlated with low-energy electron diffraction. The time dependence of the transiently occupied Ge signal is compared with that of the clean GaAs(110) surface and shows that electrons are prevented from diffusing into the GaAs bulk by the conduction-band offset of 330±40 meV.

Maple prepared organic heterostructures for photovoltaic applications

NASA Astrophysics Data System (ADS)

Stanculescu, A.; Socol, M.; Socol, G.; Mihailescu, I. N.; Girtan, M.; Stanculescu, F.

2011-09-01

In this study, we present the deposition of ZnPc, Alq3, and PTCDA thin films using Matrix Assisted Pulsed Laser Evaporation (MAPLE) technique. We also report the realisation of multilayer structures, made by the successive application of MAPLE. The films have been characterized by spectroscopic (UV-VIS and Photoluminescence) and microscopic (SEM and AFM) methods, and the effect of different deposition conditions such as fluence, number of pulses, and target concentration on the properties has been analysed. This paper also presents some investigations on the electrical conduction in sandwich type structures ITO or Si/organic layer/Au or Cu and ITO/double organic layer/Cu, emphasising the dominant effect of the height of the energetic barriers at the inorganic/organic and organic/organic interfaces.

Synthesis and electronic properties of Fe2TiO5 epitaxial thin films

NASA Astrophysics Data System (ADS)

Osada, Motoki; Nishio, Kazunori; Hwang, Harold Y.; Hikita, Yasuyuki

2018-05-01

We investigate the growth phase diagram of pseudobrookite Fe2TiO5 epitaxial thin films on LaAlO3 (001) substrates using pulsed laser deposition. Control of the oxygen partial pressure and temperature during deposition enabled selective stabilization of (100)- and (230)-oriented films. In this regime, we find an optical gap of 2.1 eV and room temperature resistivity in the range of 20-80 Ω cm, which are significantly lower than α-Fe2O3, making Fe2TiO5 potentially an ideal inexpensive visible-light harvesting semiconductor. These results provide a basis to incorporate Fe2TiO5 in oxide heterostructures for photocatalytic and photoelectrochemical applications.

Nanophotonic switch: gold-in-Ga2O3 peapod nanowires.

PubMed

Hsieh, Chin-Hua; Chou, Li-Jen; Lin, Gong-Ru; Bando, Yoshio; Golberg, Dimitri

2008-10-01

A novel metal-insulator heterostructure made of twinned Ga2O3 nanowires embedding discrete gold particles along the twin boundary was formed through a reaction between gold, gallium, and silica at 800 degrees C during simple thermal annealing. The Au-in-Ga2O3 peapods spontaneously crystallized under phase separation induced by the formation of twin boundaries. The nanostructures were analyzed by field emission scanning (FESEM) and transmission electron microscopes (FETEM), and their photoresponse was investigated using a double-frequency Nd:YAG laser with a wavelength of 532 nm on a designed single-nanowire device. The surface plasmon resonance (SPR) effects of embedded Au nanoparticles are proposed to be responsible for the remarkable photoresponse of these novel structures.

Characteristic optimization of 1.55-μm InGaAsP/InP high-power diode laser

NASA Astrophysics Data System (ADS)

Ke, Qing; Tan, Shaoyang; Zhai, Teng; Zhang, Ruikang; Lu, Dan; Ji, Chen

2014-11-01

A comprehensive design optimization of 1.55-μm high power InGaAsP/InP board area lasers is performed aiming at increasing the internal quantum efficiency (IQE) while maintaing a low internal loss of the device as well. The P-doping profile and separate confinement heterostructure (SCH) layer band gap are optimized respectively with commercial software Crosslight. Analysis of lasers with different p-doping profiles shows that, although heavy doping in P-cladding layer increases the internal loss of the device, it ensures a high IQE because higher energy barrier at the SCH/P-cladding interface as a result of heavy doping helps reduce the carrier leakage from the waveguide to the InP-cladding layer. The band gap of the SCH layer are also optimized for high slope efficiency. Smaller band gap helps reduce the vertical carrier leakage from the waveguide to the P-cladding layer, but the corresponding higher carrier concentration in SCH layer will cause some radiative recombination, thus influencing the IQE. And as the injection current increases, the carrier concentration increases faster with smaller band gap, therefore, the output power saturates sooner. An optimized band gap in SCH layer of approximately 1.127eV and heavy doping up to 1e18/cm3 at the SCH/P-cladding interface are identified for our high power laser design, and we achieved a high IQE of 94% and internal loss of 2.99/cm for our design.

High-temperature operation of broadband bidirectional terahertz quantum-cascade lasers.

PubMed

Khanal, Sudeep; Gao, Liang; Zhao, Le; Reno, John L; Kumar, Sushil

2016-09-12

Terahertz quantum cascade lasers (QCLs) with a broadband gain medium could play an important role for sensing and spectroscopy since then distributed-feedback schemes could be utilized to produce laser arrays on a single semiconductor chip with wide spectral coverage. QCLs can be designed to emit at two different frequencies when biased with opposing electrical polarities. Here, terahertz QCLs with bidirectional operation are developed to achieve broadband lasing from the same semiconductor chip. A three-well design scheme with shallow-well GaAs/Al0.10Ga0.90As superlattices is developed to achieve high-temperature operation for bidirectional QCLs. It is shown that shallow-well heterostructures lead to optimal quantum-transport in the superlattice for bidirectional operation compared to the prevalent GaAs/Al0.15Ga0.85As material system. Broadband lasing in the frequency range of 3.1-3.7 THz is demonstrated for one QCL design, which achieves maximum operating temperatures of 147 K and 128 K respectively in opposing polarities. Dual-color lasing with large frequency separation is demonstrated for a second QCL, that emits at ~3.7 THz and operates up to 121 K in one polarity, and at ~2.7 THz up to 105 K in the opposing polarity. These are the highest operating temperatures achieved for broadband terahertz QCLs at the respective emission frequencies, and could lead to commercial development of broadband terahertz laser arrays.

High-temperature operation of broadband bidirectional terahertz quantum-cascade lasers

DOE PAGES

Khanal, Sudeep; Gao, Liang; Zhao, Le; ...

2016-09-12

Terahertz quantum cascade lasers (QCLs) with a broadband gain medium could play an important role for sensing and spectroscopy since then distributed-feedback schemes could be utilized to produce laser arrays on a single semiconductor chip with wide spectral coverage. QCLs can be designed to emit at two different frequencies when biased with opposing electrical polarities. Here, we develop terahertz QCLs with bidirectional operation to achieve broadband lasing from the same semiconductor chip. A three-well design scheme with shallow-well GaAs/Al 0.10Ga 0.90As superlattices is developed to achieve high-temperature operation for bidirectional QCLs. It is shown that shallow-well heterostructures lead to optimalmore » quantum-transport in the superlattice for bidirectional operation compared to the prevalent GaAs/Al 0.15Ga 0.85As material system. Furthermore, broadband lasing in the frequency range of 3.1–3.7 THz is demonstrated for one QCL design, which achieves maximum operating temperatures of 147 K and 128 K respectively in opposing polarities. Dual-color lasing with large frequency separation is demonstrated for a second QCL, that emits at ~3.7 THz and operates up to 121 K in one polarity, and at ~2.7 THz up to 105 K in the opposing polarity. Finally, these are the highest operating temperatures achieved for broadband terahertz QCLs at the respective emission frequencies, and could lead to commercial development of broadband terahertz laser arrays.« less

High-temperature operation of broadband bidirectional terahertz quantum-cascade lasers

PubMed Central

Khanal, Sudeep; Gao, Liang; Zhao, Le; Reno, John L.; Kumar, Sushil

2016-01-01

Terahertz quantum cascade lasers (QCLs) with a broadband gain medium could play an important role for sensing and spectroscopy since then distributed-feedback schemes could be utilized to produce laser arrays on a single semiconductor chip with wide spectral coverage. QCLs can be designed to emit at two different frequencies when biased with opposing electrical polarities. Here, terahertz QCLs with bidirectional operation are developed to achieve broadband lasing from the same semiconductor chip. A three-well design scheme with shallow-well GaAs/Al0.10Ga0.90As superlattices is developed to achieve high-temperature operation for bidirectional QCLs. It is shown that shallow-well heterostructures lead to optimal quantum-transport in the superlattice for bidirectional operation compared to the prevalent GaAs/Al0.15Ga0.85As material system. Broadband lasing in the frequency range of 3.1–3.7 THz is demonstrated for one QCL design, which achieves maximum operating temperatures of 147 K and 128 K respectively in opposing polarities. Dual-color lasing with large frequency separation is demonstrated for a second QCL, that emits at ~3.7 THz and operates up to 121 K in one polarity, and at ~2.7 THz up to 105 K in the opposing polarity. These are the highest operating temperatures achieved for broadband terahertz QCLs at the respective emission frequencies, and could lead to commercial development of broadband terahertz laser arrays. PMID:27615416

High-temperature operation of broadband bidirectional terahertz quantum-cascade lasers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Khanal, Sudeep; Gao, Liang; Zhao, Le

Terahertz quantum cascade lasers (QCLs) with a broadband gain medium could play an important role for sensing and spectroscopy since then distributed-feedback schemes could be utilized to produce laser arrays on a single semiconductor chip with wide spectral coverage. QCLs can be designed to emit at two different frequencies when biased with opposing electrical polarities. Here, we develop terahertz QCLs with bidirectional operation to achieve broadband lasing from the same semiconductor chip. A three-well design scheme with shallow-well GaAs/Al 0.10Ga 0.90As superlattices is developed to achieve high-temperature operation for bidirectional QCLs. It is shown that shallow-well heterostructures lead to optimalmore » quantum-transport in the superlattice for bidirectional operation compared to the prevalent GaAs/Al 0.15Ga 0.85As material system. Furthermore, broadband lasing in the frequency range of 3.1–3.7 THz is demonstrated for one QCL design, which achieves maximum operating temperatures of 147 K and 128 K respectively in opposing polarities. Dual-color lasing with large frequency separation is demonstrated for a second QCL, that emits at ~3.7 THz and operates up to 121 K in one polarity, and at ~2.7 THz up to 105 K in the opposing polarity. Finally, these are the highest operating temperatures achieved for broadband terahertz QCLs at the respective emission frequencies, and could lead to commercial development of broadband terahertz laser arrays.« less

High-Power Growth-Robust InGaAs/InAlAs Terahertz Quantum Cascade Lasers

PubMed Central

2017-01-01

We report on high-power terahertz quantum cascade lasers based on low effective electron mass InGaAs/InAlAs semiconductor heterostructures with excellent reproducibility. Growth-related asymmetries in the form of interface roughness and dopant migration play a crucial role in this material system. These bias polarity dependent phenomena are studied using a nominally symmetric active region resulting in a preferential electron transport in the growth direction. A structure based on a three-well optical phonon depletion scheme was optimized for this bias direction. Depending on the sheet doping density, the performance of this structure shows a trade-off between high maximum operating temperature and high output power. While the highest operating temperature of 155 K is observed for a moderate sheet doping density of 2 × 1010 cm–2, the highest peak output power of 151 mW is found for 7.3 × 1010 cm–2. Furthermore, by abutting a hyperhemispherical GaAs lens to a device with the highest doping level a record output power of 587 mW is achieved for double-metal waveguide structures. PMID:28470028

High-Power Growth-Robust InGaAs/InAlAs Terahertz Quantum Cascade Lasers.

PubMed

Deutsch, Christoph; Kainz, Martin Alexander; Krall, Michael; Brandstetter, Martin; Bachmann, Dominic; Schönhuber, Sebastian; Detz, Hermann; Zederbauer, Tobias; MacFarland, Donald; Andrews, Aaron Maxwell; Schrenk, Werner; Beck, Mattias; Ohtani, Keita; Faist, Jérôme; Strasser, Gottfried; Unterrainer, Karl

2017-04-19

We report on high-power terahertz quantum cascade lasers based on low effective electron mass InGaAs/InAlAs semiconductor heterostructures with excellent reproducibility. Growth-related asymmetries in the form of interface roughness and dopant migration play a crucial role in this material system. These bias polarity dependent phenomena are studied using a nominally symmetric active region resulting in a preferential electron transport in the growth direction. A structure based on a three-well optical phonon depletion scheme was optimized for this bias direction. Depending on the sheet doping density, the performance of this structure shows a trade-off between high maximum operating temperature and high output power. While the highest operating temperature of 155 K is observed for a moderate sheet doping density of 2 × 10 10 cm -2 , the highest peak output power of 151 mW is found for 7.3 × 10 10 cm -2 . Furthermore, by abutting a hyperhemispherical GaAs lens to a device with the highest doping level a record output power of 587 mW is achieved for double-metal waveguide structures.

Bonding temperature dependence of GaInAsP/InP laser diode grown on hydrophilically directly bonded InP/Si substrate

NASA Astrophysics Data System (ADS)

Aikawa, Masaki; Onuki, Yuya; Hayasaka, Natsuki; Nishiyama, Tetsuo; Kamada, Naoki; Han, Xu; Kallarasan Periyanayagam, Gandhi; Uchida, Kazuki; Sugiyama, Hirokazu; Shimomura, Kazuhiko

2018-02-01

The bonding-temperature-dependent lasing characteristics of 1.5 a µm GaInAsP laser diode (LD) grown on a directly bonded InP/Si substrate were successfully obtained. We have fabricated the InP/Si substrate using a direct hydrophilic wafer bonding technique at bonding temperatures of 350, 400, and 450 °C, and deposited GaInAsP/InP double heterostructure layers on this InP/Si substrate. The surface conditions, X-ray diffraction (XRD) analysis, photoluminescence (PL) spectra, and electrical characteristics after the growth were compared at these bonding temperatures. No significant differences were confirmed in X-ray diffraction analysis and PL spectra at these bonding temperatures. We realized the room-temperature lasing of the GaInAsP LD on the InP/Si substrate bonded at 350 and 400 °C. The threshold current densities were 4.65 kA/cm2 at 350 °C and 4.38 kA/cm2 at 400 °C. The electrical resistance was found to increase with annealing temperature.

Study of electrochemical reduced graphene oxide and MnO2 heterostructure for supercapacitor application

NASA Astrophysics Data System (ADS)

Jana, S. K.; Rao, V. P.; Banerjee, S.

2013-02-01

In this paper we have shown enhanced supercapacitive property of electrochemically reduced graphene oxide (ERGO) and manganese dioxide (MnO2) based heterostructure over single MnO2 thin film grown by electrochemical deposition on indium tin oxide (ITO). ERGO improves the electrical conduction leading to decrease of the internal resistance of the heterostructure.

Interlayer coupling effects on Schottky barrier in the arsenene-graphene van der Waals heterostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xia, Congxin, E-mail: xiacongxin@htu.edu.cn; Xue, Bin; Wang, Tianxing

The electronic characteristics of arsenene-graphene van der Waals (vdW) heterostructures are studied by using first-principles methods. The results show that a linear Dirac-like dispersion relation around the Fermi level can be quite well preserved in the vdW heterostructures. Moreover, the p-type Schottky barrier (0.18 eV) to n-type Schottky barrier (0.31 eV) transition occurs when the interlayer distance increases from 2.8 to 4.5 Å, which indicates that the Schottky barrier can be tuned effectively by the interlayer distance in the vdW heterostructures.

Electronic structures and enhanced optical properties of blue phosphorene/transition metal dichalcogenides van der Waals heterostructures.

PubMed

Peng, Qiong; Wang, Zhenyu; Sa, Baisheng; Wu, Bo; Sun, Zhimei

2016-08-24

As a fast emerging topic, van der Waals (vdW) heterostructures have been proposed to modify two-dimensional layered materials with desired properties, thus greatly extending the applications of these materials. In this work, the stacking characteristics, electronic structures, band edge alignments, charge density distributions and optical properties of blue phosphorene/transition metal dichalcogenides (BlueP/TMDs) vdW heterostructures were systematically studied based on vdW corrected density functional theory. Interestingly, the valence band maximum and conduction band minimum are located in different parts of BlueP/MoSe2, BlueP/WS2 and BlueP/WSe2 heterostructures. The MoSe2, WS2 or WSe2 layer can be used as the electron donor and the BlueP layer can be used as the electron acceptor. We further found that the optical properties under visible-light irradiation of BlueP/TMDs vdW heterostructures are significantly improved. In particular, the predicted upper limit energy conversion efficiencies of BlueP/MoS2 and BlueP/MoSe2 heterostructures reach as large as 1.16% and 0.98%, respectively, suggesting their potential applications in efficient thin-film solar cells and optoelectronic devices.