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Sample records for cadmium telluride photovoltaic

  1. Cadmium telluride photovoltaic radiation detector

    DOEpatents

    Agouridis, Dimitrios C.; Fox, Richard J.

    1981-01-01

    A dosimetry-type radiation detector is provided which employs a polycrystalline, chlorine-compensated cadmium telluride wafer fabricated to operate as a photovoltaic current generator used as the basic detecting element. A photovoltaic junction is formed in the wafer by painting one face of the cadmium telluride wafer with an n-type semiconductive material. The opposite face of the wafer is painted with an electrically conductive material to serve as a current collector. The detector is mounted in a hermetically sealed vacuum containment. The detector is operated in a photovoltaic mode (zero bias) while DC coupled to a symmetrical differential current amplifier having a very low input impedance. The amplifier converts the current signal generated by radiation impinging upon the barrier surface face of the wafer to a voltage which is supplied to a voltmeter calibrated to read quantitatively the level of radiation incident upon the detecting wafer.

  2. Cadmium telluride photovoltaic radiation detector

    DOEpatents

    Agouridis, D.C.; Fox, R.J.

    A dosimetry-type radiation detector is provided which employs a polycrystalline, chlorine-compensated cadmium telluride wafer fabricated to operate as a photovoltaic current generator used as the basic detecting element. A photovoltaic junction is formed in the wafer by painting one face of the cadmium telluride wafer with an n-type semi-conductive material. The opposite face of the wafer is painted with an electrically conductive material to serve as a current collector. The detector is mounted in a hermetically sealed vacuum containment. The detector is operated in a photovoltaic mode (zero bias) while DC coupled to a symmetrical differential current amplifier having a very low input impedance. The amplifier converts the current signal generated by radiation impinging upon the barrier surface face of the wafer to a voltage which is supplied to a voltmeter calibrated to read quantitatively the level of radiation incident upon the detecting wafer.

  3. Device characterization of cadmium telluride photovoltaics

    NASA Astrophysics Data System (ADS)

    Geisthardt, Russell M.

    Thin-film photovoltaics have the potential to make a large impact on the world energy supply. They can provide clean, affordable energy for the world. Understanding the device physics and behavior will enable increases in efficiency which will increase their impact. This work presents novel approaches for evaluating efficiency, as well as a set of tools for in-depth whole-cell and uniformity characterization. The understanding of efficiency losses is essential for reducing or eliminating the losses. The efficiency can be characterized by a breakdown into three categories: solar spectrum, optical, and electronic efficiency. For several record devices, there is little difference in the solar spectrum efficiency, modest difference in the optical efficiency, and large difference in the electronic efficiency. The losses within each category can also be further characterized. The losses due to the broad solar spectrum and finite temperature are well understood from a thermodynamic physics perspective. Optical losses can be fully characterized using quantum efficiency and optical measurements. Losses in fill factor can be quantified from series and shunt resistance, as well as the expected fill factor from the measured V oc and A. Open-circuit voltage losses are the most significant, but are also be the hardest to understand, as well as the most technology-dependent. Characterization of the whole cell helps to understand the behavior, performance, and properties of the cell. Several different tools can be used for whole-cell characterization, including current-voltage, quantum efficiency, and capacitance measurements. Each of these tools give specific information about the behavior of the cell. When combined, they can lead to a more complete understanding of the cell performance than when taken individually. These tools were applied to several specific CdTe experiments. They have helped to characterize the baseline performance of both the deposition tool and the

  4. Brief review of cadmium telluride-based photovoltaic technologies

    NASA Astrophysics Data System (ADS)

    Başol, Bülent M.; McCandless, Brian

    2014-01-01

    Cadmium telluride (CdTe) is the most commercially successful thin-film photovoltaic technology. Development of CdTe as a solar cell material dates back to the early 1980s when ˜10% efficient devices were demonstrated. Implementation of better quality glass, more transparent conductive oxides, introduction of a high-resistivity transparent film under the CdS junction-partner, higher deposition temperatures, and improved Cl-treatment, doping, and contacting approaches yielded >16% efficient cells in the early 2000s. Around the same time period, use of a photoresist plug monolithic integration process facilitated the demonstration of the first 11% efficient module. The most dramatic advancements in CdTe device efficiencies were made during the 2013 to 2014 time frame when small-area cell conversion efficiency was raised to 20% range and a champion module efficiency of 17% was reported. CdTe technology is attractive in terms of its limited life-cycle greenhouse gas and heavy metal emissions, small carbon footprint, and short energy payback times. Limited Te availability is a challenge for the growth of this technology unless Te utilization rates are greatly enhanced along with device efficiencies.

  5. Process for producing cadmium sulfide on a cadmium telluride surface

    DOEpatents

    Levi, Dean H.; Nelson, Art J.; Ahrenkiel, Richard K.

    1996-01-01

    A process for producing a layer of cadmium sulfide on a cadmium telluride surface to be employed in a photovoltaic device. The process comprises providing a cadmium telluride surface which is exposed to a hydrogen sulfide plasma at an exposure flow rate, an exposure time and an exposure temperature sufficient to permit reaction between the hydrogen sulfide and cadmium telluride to thereby form a cadmium sulfide layer on the cadmium telluride surface and accomplish passivation. In addition to passivation, a heterojunction at the interface of the cadmium sulfide and the cadmium telluride can be formed when the layer of cadmium sulfide formed on the cadmium telluride is of sufficient thickness.

  6. Mercury Telluride and Cadmium Telluride

    NASA Technical Reports Server (NTRS)

    2004-01-01

    A semiconductor's usefulness is determined by how atoms are ordered within the crystal's underlying three-dimensional structure. While this mercury telluride and cadmium telluride alloy sample mixes completely in Earth -based laboratories, convective flows prevent them from mixing uniformly.

  7. LEACHING OF CADMIUM, TELLURIUM AND COPPER FROM CADMIUM TELLURIDE PHOTOVOLTAIC MODULES.

    SciTech Connect

    FTHENAKIS,V.

    2004-02-03

    Separating the metals from the glass is the first step in recycling end-of-life cadmium telluride photovoltaic modules and manufacturing scrap. We accomplished this by leaching the metals in solutions of various concentrations of acids and hydrogen peroxide. A relatively dilute solution of sulfuric acid and hydrogen peroxide was found to be most effective for leaching cadmium and tellurium from broken pieces of CdTe PV modules. A solution comprising 5 mL of hydrogen peroxide per kg of PV scrap in 1 M sulfuric acid, gave better results than the 12 mL H{sub 2}O{sub 2}/kg, 3.2 M H{sub 2}SO{sub 4} solution currently used in the industry. Our study also showed that this dilute solution is more effective than hydrochloric-acid solutions and it can be reused after adding a small amount of hydrogen peroxide. These findings, when implemented in large-scale operation, would result in significant savings due to reductions in volume of the concentrated leaching agents (H{sub 2}SO{sub 4} and H{sub 2}O{sub 2}) and of the alkaline reagents required to neutralize the residuals of leaching.

  8. Mercury Telluride and Cadmium Telluride

    NASA Technical Reports Server (NTRS)

    2004-01-01

    A semiconductor's usefulness is determined by how atoms are ordered within the crystal's underlying three-dimensional structure. While this mercury telluride and cadmium telluride alloy sample mixes completely in Earth -based laboratories, convective flows prevent them from mixing uniformly. In space, the ingredients mix more homogenously, resulting in a superior product.

  9. Properties of Nitrogen-Doped Zinc Telluride Films for Back Contact to Cadmium Telluride Photovoltaics

    NASA Astrophysics Data System (ADS)

    Shimpi, Tushar M.; Drayton, Jennifer; Swanson, Drew E.; Sampath, Walajabad S.

    2017-08-01

    Zinc telluride (ZnTe) films have been deposited onto uncoated glass superstrates by reactive radiofrequency (RF) sputtering with different amounts of nitrogen introduced into the process gas, and the structural and electronic transport properties of the resulting nitrogen-doped ZnTe (ZnTe:N) films characterized. Based on transmission and x-ray diffraction measurements, it was observed that the crystalline quality of the ZnTe:N films decreased with increasing nitrogen in the deposition process. The bulk carrier concentration of the ZnTe:N films determined from Hall-effect measurements showed a slight decrease at 4% nitrogen flow rate. The effect of ZnTe:N films as back contact to cadmium telluride (CdTe) solar cells was also investigated. ZnTe:N films were deposited before or after CdCl2 passivation on CdTe/CdS samples. Small-area devices were characterized for their electronic properties. Glancing-angle x-ray diffraction measurements and energy-dispersive spectroscopy analysis confirmed substantial loss of zinc from the samples where CdCl2 passivation was carried out after ZnTe:N film deposition.

  10. Charge Carrier Processes in Photovoltaic Materials and Devices: Lead Sulfide Quantum Dots and Cadmium Telluride

    NASA Astrophysics Data System (ADS)

    Roland, Paul

    Charge separation, transport, and recombination represent fundamental processes for electrons and holes in semiconductor photovoltaic devices. Here, two distinct materials systems, based on lead sulfide quantum dots and on polycrystalline cadmium telluride, are investigated to advance the understanding of their fundamental nature for insights into the material science necessary to improve the technologies. Lead sulfide quantum dots QDs have been of growing interest in photovoltaics, having recently produced devices exceeding 10% conversion efficiency. Carrier transport via hopping through the quantum dot thin films is not only a function of inter-QD distance, but of the QD size and dielectric media of the surrounding materials. By conducting temperature dependent transmission, photoluminescence, and time resolved photoluminescence measurements, we gain insight into photoluminescence quenching and size-dependent carrier transport through QD ensembles. Turning to commercially relevant cadmium telluride (CdTe), we explore the high concentrations of self-compensating defects (donors and acceptors) in polycrystalline thin films via photoluminescence from recombination at defect sites. Low temperature (25 K) photoluminescence measurements of CdTe reveal numerous radiative transitions due to exciton, trap assisted, and donor-acceptor pair recombination events linked with various defect states. Here we explore the difference between films deposited via close space sublimation (CSS) and radio frequency magnetron sputtering, both as-grown and following a cadmium chloride treatment. The as-grown CSS films exhibited a strong donor-acceptor pair transition associated with deep defect states. Constructing photoluminescence spectra as a function of time from time-resolved photoluminescence data, we report on the temporal evolution of this donor-acceptor transition. Having gained insight into the cadmium telluride film quality from low temperature photoluminescence measurements

  11. Process for producing cadmium sulfide on a cadmium telluride surface

    DOEpatents

    Levi, D.H.; Nelson, A.J.; Ahrenkiel, R.K.

    1996-07-30

    A process is described for producing a layer of cadmium sulfide on a cadmium telluride surface to be employed in a photovoltaic device. The process comprises providing a cadmium telluride surface which is exposed to a hydrogen sulfide plasma at an exposure flow rate, an exposure time and an exposure temperature sufficient to permit reaction between the hydrogen sulfide and cadmium telluride to thereby form a cadmium sulfide layer on the cadmium telluride surface and accomplish passivation. In addition to passivation, a heterojunction at the interface of the cadmium sulfide and the cadmium telluride can be formed when the layer of cadmium sulfide formed on the cadmium telluride is of sufficient thickness. 12 figs.

  12. Sintered cadmium telluride nanocrystal photovoltaics: Improving chemistry to facilitate roll-to-roll fabrication

    NASA Astrophysics Data System (ADS)

    Kurley, James Matthew, III

    Recent interest in clean, renewable energy has increased importance on cost-effective and materials efficient deposition methods. Solution-processed solar cells utilizing cadmium telluride nanocrystal inks offer a viable method for reducing cost, increasing materials effectiveness, and decreasing the need for fossil fuels in the near future. Initial work focused on developing a useful platform for testing new chemistries for solubilizing and depositing nanocrystal inks. Layer-by-layer deposition using a combination of spincoating, cadmium chloride treatment, and annealing created a photovoltaic-grade CdTe absorber layer. In conjunction with layer-by-layer deposition, a device architecture of ITO/CdTe/ZnO/Al was utilized to create power conversion efficiencies of over 12% with the help of current/light soaking. Detailed exploration of device geometry, capacitance measurements, and intensity- and temperature-dependent testing determined the ITO/CdTe interface required additional scrutiny. This initial investigation sparked three new. avenues of research: create an Ohmic contact to CdTe, remove the cadmium chloride bath treatment, and create a roll-to-roll friendly process. Improved contact between ITO and CdTe was achieved by using a variety of materials already proven to create Ohmic contact to CdTe. While most of these materials were previously employed using standard approaches, solution-processed analogs were explored. The cadmium chloride bath treatment proved inconsistent, wasteful, and difficult to utilize quickly. It was removed by using trichlorocadmate-capped nanocrystals to combine the semiconductor with the required grain growth agent. To establish roll-to-roll friendly process, the deposition method was improved, heating source changed, and cadmium chloride bath step was removed. Spraycoating or doctor-blading the trichlorocadmate-capped nanocrystals followed by annealing with an IR lamp established a process that can deposit CdTe in a high throughput

  13. Cadmium telluride photovoltaic manufacturing technology. Annual subcontract report, 7 January 1994--6 January 1995

    SciTech Connect

    Weisiger, D.; Albright, S.P.; Brines, J.; Thompson, R.

    1995-11-01

    This report describes work performed by Golden Photon, Inc. (GPI), to conduct research under the PVMaT program, Phase 2B. The objective of the research is to advance GPI`s manufacturing technology, reduce module production costs, increase average module performance, and identify ways to expand production capacity. More specifically, the tasks established for Phase I were to design and install leasehold improvements for the 2-MW production line; to improve and develop product design, efficiency, and marketability; to ensure uninterrupted qualified supplies and raw materials for production; to address environmental, health, and safety issues encountered during production of photovoltaic modules; and to reduce the cost of manufacturing modules. During the first half of this reporting period, the development, design, and debugging of cell interconnection equipment critical to start-up was completed. During the second and third quarters, the primary focus was on the substrate deposition steps (tin oxide, cadmium sulfide, and cadmium telluride) and cell interconnection steps (division). In general, process development, engineering, and quality teams continued to focus on identifying, baselining, and improving (through redesign) actual process equipment operation parameters to meet the required PV panel specifications and improve process throughput rates and yields.

  14. Fate and transport evaluation of potential leaching risks from cadmium telluride photovoltaics.

    PubMed

    Sinha, Parikhit; Balas, Robert; Krueger, Lisa; Wade, Andreas

    2012-07-01

    Fate and transport analysis has been performed to evaluate potential exposures to cadmium (Cd) from cadmium telluride (CdTe) photovoltaics (PV) for rainwater leaching from broken modules in a commercial building scenario. Leaching from broken modules is modeled using the worst-case scenario of total release of Cd, and residential screening levels are used to evaluate potential health impacts to on-site workers and off-site residents. A rooftop installation was considered rather than a ground-mount installation because rainwater runoff is concentrated via building downspouts in a rooftop installation rather than being dispersed across large areas in a ground-mount installation. Fate and transport of Cd from leachate to soil are modeled using equilibrium soil/soil-water partitioning. Subsequent migration to ambient air as windblown dust is evaluated with a screening Gaussian plume dispersion model, and migration to groundwater is evaluated with a dilution-attenuation factor approach. Exposure point concentrations in soil, air, and groundwater are one to six orders of magnitude below conservative (residential soil, residential air, drinking water) human health screening levels in both a California and southern Germany (Baden-Württemberg) exposure scenario. Potential exposures to Cd from rainwater leaching of broken modules in a commercial building scenario are highly unlikely to pose a potential health risk to on-site workers or off-site residents.

  15. Spectroscopic ellipsometry as a process control tool for manufacturing cadmium telluride thin film photovoltaic devices

    NASA Astrophysics Data System (ADS)

    Smith, Westcott P.

    In recent decades, there has been concern regarding the sustainability of fossil fuels. One of the more promising alternatives is Cadmium Telluride (CdTe) thin-film photovoltaic (PV) devices. Improved quality measurement techniques may aid in improving this existing technology. Spectroscopic ellipsometry (SE) is a common, non-destructive technique for measuring thin films in the silicon wafer industry. SE results have also been tied to properties believed to play a role in CdTe PV device efficiency. A study assessing the potential of SE for use as a quality measurement tool had not been previously reported. Samples of CdTe devices produced by both laboratory and industrial scale processes were measured by SE and Scanning Electron Microscopy (SEM). Mathematical models of the optical characteristics of the devices were developed and fit to SE data from multiple angles and locations on each sample. Basic statistical analysis was performed on results from the automated fits to provide an initial evaluation of SE as a quantitative quality measurement process. In all cases studied, automated SE models produced average stack thickness values within 10% of the values produced by SEM, and standard deviations for the top bulk layer thickness were less than 1% of the average values.

  16. Chemical and electronic structure of surfaces and interfaces in cadmium telluride based photovoltaic devices

    NASA Astrophysics Data System (ADS)

    Duncan, Douglas Arthur

    The surface and interface properties are of the upmost importance in the understanding, optimization, and application for photovoltaic devices. Often the chemical, electronic, and morphological properties of the films are empirically optimized, however when progress slows, a fundamental understanding of these properties can lead to breakthroughs. In this work, surfaces and interfaces of solar cell-relevant films are probed with a repertoire of X-ray analytical and microanalysis techniques including X-ray photoelectron (XPS), X-ray excited Auger electron (XAES), X-ray emission (XES) spectroscopies, and atomic force (AFM) and scanning electron (SEM) microscopies. Silicon-based devices currently dominate the solar market, which is rather inflexible in application. Cadmium telluride (CdTe)-based technologies offer a cost-effective alternative with additional benefits including roll-to-roll production and high conversion efficiencies. This, like other next generation thin film solar cells, needs more optimization to replace Si. The charge transport across a heterojunction is of great importance to drive up the conversion efficiency of the device. The interface of a CdS buffer layer and SnO2:F front contact was investigated as a function of CdCl2-treatment. In order to measure the fully formed interface, after subsequent layer deposition and heat treatments, mechanical stressing of the layer stack resulted in physical separation at the desired interface. By combining multiple spectroscopic and morphologic methods a complete picture has evolved. CdS is often used as a buffer layer in CdTe based devices. This layer is empirically optimized to be very thin (˜100 nm) due to the parasitic light absorption in and around the 2 eV range. By widening the band gap or replacing it with a more transparent material, more photons can be absorbed by the CdTe layer and significantly increase the overall conversion efficiency of the device. CdS:O and Zn(1-x)MgxO were studied as possible

  17. Polycrystalline Thin-Film Research: Cadmium Telluride (Fact Sheet)

    SciTech Connect

    Not Available

    2013-06-01

    This National Center for Photovoltaics sheet describes the capabilities of its polycrystalline thin-film research in the area of cadmium telluride. The scope and core competencies and capabilities are discussed.

  18. Polycrystalline Thin-Film Research: Cadmium Telluride (Fact Sheet)

    SciTech Connect

    Not Available

    2011-06-01

    Capabilities fact sheet that includes scope, core competencies and capabilities, and contact/web information for Polycrystalline Thin-Film Research: Cadmium Telluride at the National Center for Photovoltaics.

  19. Derived reference doses for three compounds used in the photovoltaics industry: Copper indium diselenide, copper gallium diselenide, and cadmium telluride

    SciTech Connect

    Moskowitz, P.D.; Bernholc, N.; DePhillips, M.P.; Viren, J.

    1995-07-06

    Polycrystalline thin-film photovoltaic modules made from copper indium diselenide (CIS), copper gallium diselenide (CGS), and cadmium telluride (CdTe) arc nearing commercial development. A wide range of issues are being examined as these materials move from the laboratory to large-scale production facilities to ensure their commercial success. Issues of traditional interest include module efficiency, stability and cost. More recently, there is increased focus given to environmental, health and safety issues surrounding the commercialization of these same devices. An examination of the toxicological properties of these materials, and their chemical parents is fundamental to this discussion. Chemicals that can present large hazards to human health or the environment are regulated often more strictly than those that are less hazardous. Stricter control over how these materials are handled and disposed can increase the costs associated with the production and use of these modules dramatically. Similarly, public perception can be strongly influenced by the inherent biological hazard that these materials possess. Thus, this report: presents a brief background tutorial on how toxicological data are developed and used; overviews the toxicological data available for CIS, CGS and CdTe; develops ``reference doses`` for each of these compounds; compares the reference doses for these compounds with those of their parents; discusses the implications of these findings to photovoltaics industry.

  20. Modelling of illuminated current–voltage characteristics to evaluate leakage currents in long wavelength infrared mercury cadmium telluride photovoltaic detectors

    SciTech Connect

    Gopal, Vishnu E-mail: wdhu@mail.sitp.ac.cn; Qiu, WeiCheng; Hu, Weida E-mail: wdhu@mail.sitp.ac.cn

    2014-11-14

    The current–voltage characteristics of long wavelength mercury cadmium telluride infrared detectors have been studied using a recently suggested method for modelling of illuminated photovoltaic detectors. Diodes fabricated on in-house grown arsenic and vacancy doped epitaxial layers were evaluated for their leakage currents. The thermal diffusion, generation–recombination (g-r), and ohmic currents were found as principal components of diode current besides a component of photocurrent due to illumination. In addition, both types of diodes exhibited an excess current component whose growth with the applied bias voltage did not match the expected growth of trap-assisted-tunnelling current. Instead, it was found to be the best described by an exponential function of the type, I{sub excess} = I{sub r0} + K{sub 1} exp (K{sub 2} V), where I{sub r0}, K{sub 1}, and K{sub 2} are fitting parameters and V is the applied bias voltage. A study of the temperature dependence of the diode current components and the excess current provided the useful clues about the source of origin of excess current. It was found that the excess current in diodes fabricated on arsenic doped epitaxial layers has its origin in the source of ohmic shunt currents. Whereas, the source of excess current in diodes fabricated on vacancy doped epitaxial layers appeared to be the avalanche multiplication of photocurrent. The difference in the behaviour of two types of diodes has been attributed to the difference in the quality of epitaxial layers.

  1. Imaging as characterization techniques for thin-film cadmium telluride photovoltaics

    NASA Astrophysics Data System (ADS)

    Zaunbrecher, Katherine

    The goal of increasing the efficiency of solar cell devices is a universal one. Increased photovoltaic (PV) performance means an increase in competition with other energy technologies. One way to improve PV technologies is to develop rapid, accurate characterization tools for quality control. Imaging techniques developed over the past decade are beginning to fill that role. Electroluminescence (EL), photoluminescence (PL), and lock-in thermography are three types of imaging implemented in this study to provide a multifaceted approach to studying imaging as applied to thin-film CdTe solar cells. Images provide spatial information about cell operation, which in turn can be used to identify defects that limit performance. This study began with developing EL, PL, and dark lock-in thermography (DLIT) for CdTe. Once imaging data were acquired, luminescence and thermography signatures of non-uniformities that disrupt the generation and collection of carriers were identified and cataloged. Additional data acquisition and analysis were used to determine luminescence response to varying operating conditions. This includes acquiring spectral data, varying excitation conditions, and correlating luminescence to device performance. EL measurements show variations in a cell's local voltage, which include inhomogeneities in the transparent-conductive oxide (TCO) front contact, CdS window layer, and CdTe absorber layer. EL signatures include large gradients, local reduction of luminescence, and local increases in luminescence on the interior of the device as well as bright spots located on the cell edges. The voltage bias and spectral response were analyzed to determine the response of these non-uniformities and surrounding areas. PL images of CdTe have not shown the same level of detail and features compared to their EL counterparts. Many of the signatures arise from reflections and severe inhomogeneities, but the technique is limited by the external illumination source used to

  2. Research on Mercury Cadmium Telluride.

    DTIC Science & Technology

    1986-05-20

    12180-3590 (Received 25 September 1985; accepted for publication 16 December 1985) Growth of epitaxial mercury cadmium telluride (Hg, Cd, Te) on 100...one another. 2015 j Appi Phys .vol 57. No 6. 15 March � Oaccar etai 2015 • : -. ...... ., " .. .’. .- 6 We have carried out a full EER study of...strained materials. K C Hi,,. U Fhrf r Ailn.od H P , Re, " . : 21’󈧘 7 •Aog, >ys . ,o 57 5.o 6 𔃿 a’c" � : acca - ’i :,’" Growth of CdTe on GaAs by

  3. Process for producing large grain cadmium telluride

    DOEpatents

    Hasoon, F.S.; Nelson, A.J.

    1996-01-16

    A process is described for producing a cadmium telluride polycrystalline film having grain sizes greater than about 20 {micro}m. The process comprises providing a substrate upon which cadmium telluride can be deposited and placing that substrate within a vacuum chamber containing a cadmium telluride effusion cell. A polycrystalline film is then deposited on the substrate through the steps of evacuating the vacuum chamber to a pressure of at least 10{sup {minus}6} torr.; heating the effusion cell to a temperature whereat the cell releases stoichiometric amounts of cadmium telluride usable as a molecular beam source for growth of grains on the substrate; heating the substrate to a temperature whereat a stoichiometric film of cadmium telluride can be deposited; and releasing cadmium telluride from the effusion cell for deposition as a film on the substrate. The substrate then is placed in a furnace having an inert gas atmosphere and heated for a sufficient period of time at an annealing temperature whereat cadmium telluride grains on the substrate grow to sizes greater than about 20 {micro}m.

  4. Process for producing large grain cadmium telluride

    DOEpatents

    Hasoon, Falah S.; Nelson, Art J.

    1996-01-01

    A process for producing a cadmium telluride polycrystalline film having grain sizes greater than about 20 .mu.m. The process comprises providing a substrate upon which cadmium telluride can be deposited and placing that substrate within a vacuum chamber containing a cadmium telluride effusion cell. A polycrystalline film is then deposited on the substrate through the steps of evacuating the vacuum chamber to a pressure of at least 10.sup.-6 torr.; heating the effusion cell to a temperature whereat the cell releases stoichiometric amounts of cadmium telluride usable as a molecular beam source for growth of grains on the substrate; heating the substrate to a temperature whereat a stoichiometric film of cadmium telluride can be deposited; and releasing cadmium telluride from the effusion cell for deposition as a film on the substrate. The substrate then is placed in a furnace having an inert gas atmosphere and heated for a sufficient period of time at an annealing temperature whereat cadmium telluride grains on the substrate grow to sizes greater than about 20 .mu.m.

  5. Research support for cadmium telluride crystal growth

    NASA Technical Reports Server (NTRS)

    Rosenberger, Franz; Banish, Michael

    1993-01-01

    Work performed during the period 11 Feb. 1992 to 10 Aug. 1993 on research support for cadmium telluride crystal growth is reported. Work on chemical impurity characterization and mass spectroscopy is described.

  6. Mercury Cadmium Telluride Sputtered Target Research.

    DTIC Science & Technology

    1982-06-29

    ShirnlU in 1967 to describe the altered layer formation in the binary alloy NiCr . This model assumes an infinitesimally thin layer being sputter ...AD-AL7 456 NEW JERSEY INST OF TECH NEWARK DEPT OP ELECTRICAL EN-ETC FIG 13/8 MERCURY CADMIUM TELLURIDE SPUTTERED TARGET RESEARCH( U) JUN 82 R H...MERCURY CADMIUM TELLURIDE SPUTTERED TARGET RESEARCH TYPE OF REPORT (TECHNICAL, FINAL, ETC.) FINAL TECHNICAL REPORT AUTHOR (S) ROY H. CORNELY DATE JUNE 29

  7. Thin film cadmium telluride, zinc telluride, and mercury zinc telluride solar cells

    SciTech Connect

    Chu, T.L. )

    1992-04-01

    This report describes research to demonstrate (1) thin film cadmium telluride solar cells with a quantum efficiency of 75% or higher at 0. 44 {mu}m and a photovoltaic efficiency of 11.5% or greater, and (2) thin film zinc telluride and mercury zinc telluride solar cells with a transparency to sub-band-gap radiation of 65% and a photovoltaic conversion efficiency of 5% and 8%, respectively. Work was directed at (1) depositing transparent conducting semiconductor films by solution growth and metal-organic chemical vapor deposition (MOCVD) technique, (2) depositing CdTe films by close-spaced sublimation (CSS) and MOCVD techniques, (3) preparing and evaluating thin film CdTe solar cells, and (4) preparing and characterizing thin film ZnTe, CD{sub 1-x}Zn{sub 1-x}Te, and Hg{sub 1-x}Zn{sub x}Te solar cells. The deposition of CdS films from aqueous solutions was investigated in detail, and their crystallographic, optical, and electrical properties were characterized. CdTe films were deposited from DMCd and DIPTe at 400{degrees}C using TEGa and AsH{sub 3} as dopants. CdTe films deposited by CSS had significantly better microstructures than those deposited by MOCVD. Deep energy states in CdTe films deposited by CSS and MOCVD were investigated. Thin films of ZnTe, Cd{sub 1- x}Zn{sub x}Te, and Hg{sub 1-x}Zn{sub x}Te were deposited by MOCVD, and their crystallographic, optical, and electrical properties were characterized. 67 refs.

  8. High-efficiency, thin-film cadmium telluride photovoltaic cells. Annual subcontract report, 20 January 1994--19 January 1995

    SciTech Connect

    Compaan, A.D.; Bohn, R.G.; Rajakarunanayake, Y.

    1995-08-01

    This report describes work performed to develop and optimize the process of radio frequency (RF) sputtering for the fabrication of thin-film solar cells on glass. The emphasis is on CdTe-related materials including CdTe, CdS, ZnTe, and ternary alloy semiconductors. Pulsed laser physical vapor deposition (LPVD) was used for exploratory work on these materials, especially where alloying or doping are involved, and for the deposition of cadmium chloride layers. For the sputtering work, a two-gun sputtering chamber was implemented, with optical access for monitoring temperature and growth rate. We studied the optical and electrical properties of the plasmas produced by two different kinds of planar magnetron sputter guns with different magnetic field configurations and strengths. Using LPVD, we studied alloy semiconductors such as CdZnTe and heavily doped semiconductors such as ZnTe:Cu for possible incorporation into graded band gap CdTe-based photovoltaic devices.

  9. Transient Response of Cadmium Telluride Modules to Light Exposure: Preprint

    SciTech Connect

    Deline, C.; del Cueto, J.; Albin, D. S.; Petersen, C.; Tyler, L.; TamizhMani, G.

    2011-07-01

    Commercial cadmium telluride (CdTe) photovoltaic (PV) modules from three different manufacturers were monitored for performance changes during indoor and outdoor light-exposure. Short-term transients in Voc were recorded on some modules, with characteristic times of ~1.1 hours. Outdoor performance data shows a similar drop in Voc after early morning light exposure. Preliminary analysis of FF changes show light-induced changes on multiple time scales, including a long time scale.

  10. Floating zone melting of cadmium telluride

    NASA Technical Reports Server (NTRS)

    Chang, Wen-Ming; Regel, L. L.; Wilcox, W. R.

    1992-01-01

    To produce superior crystals of cadmium telluride, floating zone melting in space has been proposed. Techniques required for floating zone melting of cadmium telluride are being developed. We have successfully float-zoned cadmium telluride on earth using square rods. A resistance heater was constructed for forming the molten zone. Evaporation of the molten zone was controlled by adding excess cadmium to the growth ampoule combined with heating of the entire ampoule. An effective method to hold the feed rod was developed. Slow rotation of the growth ampoule was proven experimentally to be necessary to achieve a complete symmetric molten zone. Most of the resultant cylindrical rods were single crystals with twins. Still needed is a suitable automatic method to control the zone length. We tried a fiber optical technique to control the zone length, but experiments showed that application of this technique to automate zone length control is unlikely to be successful.

  11. Floating zone melting of cadmium telluride

    NASA Technical Reports Server (NTRS)

    Chang, Wen-Ming; Regel, L. L.; Wilcox, W. R.

    1992-01-01

    To produce superior crystals of cadmium telluride, floating zone melting in space has been proposed. Techniques required for floating zone melting of cadmium telluride are being developed. We have successfully float-zoned cadmium telluride on earth using square rods. A resistance heater was constructed for forming the molten zone. Evaporation of the molten zone was controlled by adding excess cadmium to the growth ampoule combined with heating of the entire ampoule. An effective method to hold the feed rod was developed. Slow rotation of the growth ampoule was proven experimentally to be necessary to achieve a complete symmetric molten zone. Most of the resultant cylindrical rods were single crystals with twins. Still needed is a suitable automatic method to control the zone length. We tried a fiber optical technique to control the zone length, but experiments showed that application of this technique to automate zone length control is unlikely to be successful.

  12. Transport phenomena in the close-spaced sublimation deposition process for manufacture of large-area cadmium telluride photovoltaic panels: Modeling and optimization

    NASA Astrophysics Data System (ADS)

    Malhotra, C. P.

    With increasing national and global demand for energy and concerns about the effect of fossil fuels on global climate change, there is an increasing emphasis on the development and use of renewable sources of energy. Solar cells or photovoltaics constitute an important renewable energy technology but the major impediment to their widespread adoption has been their high initial cost. Although thin-film photovoltaic semiconductors such as cadmium sulfide-cadmium telluride (CdS/CdTe) can potentially be inexpensively manufactured using large area deposition techniques such as close-spaced sublimation (CSS), their low stability has prevented them from becoming an alternative to traditional polycrystalline silicon solar cells. A key factor affecting the stability of CdS/CdTe cells is the uniformity of deposition of the thin films. Currently no models exist that can relate the processing parameters in a CSS setup with the film deposition uniformity. Central to the development of these models is a fundamental understanding of the complex transport phenomena which constitute the deposition process which include coupled conduction and radiation as well as transition regime rarefied gas flow. This thesis is aimed at filling these knowledge gaps and thereby leading to the development of the relevant models. The specific process under consideration is the CSS setup developed by the Materials Engineering Group at the Colorado State University (CSU). Initially, a 3-D radiation-conduction model of a single processing station was developed using the commercial finite-element software ABAQUS and validated against data from steady-state experiments carried out at CSU. A simplified model was then optimized for maximizing the steady-state thermal uniformity within the substrate. It was inferred that contrary to traditional top and bottom infrared lamp heating, a lamp configuration that directs heat from the periphery of the sources towards the center results in the minimum temperature

  13. Thermal pulse damage thresholds in cadmium telluride.

    PubMed

    Slattery, J E; Thompson, J S; Schroeder, J B

    1975-09-01

    A model is presented for predicting the temperature rise in an opaque material during the absorption of a moderately short pulse of energy. Experimental verification of the model employing a pulsed ruby laser and a cadmium telluride plate is described. Two distinct damage thresholds were noted: (1) at modest energy levels plastic deformation occurred, and (2) the higher energies resulted in surface melting.

  14. Diffusion and Defect Characterization Studies of Mercury Cadmium Telluride

    DTIC Science & Technology

    1989-08-01

    Mercury Cadmium Telluride" Principal Investigator: D. A. Stevenson Department of Materials Science and Engineering Stanford University Stanford, CA 94305...Include Security Classificatton, Difuson Defect Characterization Studies of Mercury Cadmium Telluride 12 PERSONAL AUTHOR(S) ProfessJL Ddvid A. Stevenson 13a...diffusion and defect chemistry of mercury cadmium telluride (MCT; Hg Cd Te). In this study, we have measured tracer self- diffusion and interdiffusion

  15. Electron mobility in mercury cadmium telluride

    NASA Technical Reports Server (NTRS)

    Patterson, James D.

    1988-01-01

    A previously developed program, which includes all electronic interactions thought to be important, does not correctly predict the value of electron mobility in mercury cadmium telluride particularly near room temperature. Part of the reason for this discrepancy is thought to be the way screening is handled. It seems likely that there are a number of contributors to errors in the calculation. The objective is to survey the calculation, locate reasons for differences between experiment and calculation, and suggest improvements.

  16. Cadmium zinc telluride charged particle nuclear detectors

    SciTech Connect

    Toney, J.E. |; James, R.B.; Antolak, A.

    1997-02-01

    This report describes the improvements in understanding of transport phenomena in cadmium zinc telluride radiation sensors achieved through studies of alpha particle response and spatially resolved photoconductivity mapping. Alpha particle response waveforms and photocurrent profiles both indicate non-uniformities in the electric field which may have detrimental effects on detector performance. Identifying and eliminating the sources of these nonuniformities will ultimately lead to improved detector performance.

  17. Numerical Simulation of the Performance Characteristics, Instability, and Effects of Band Gap Grading in Cadmium Telluride Based Photovoltaic Devices

    SciTech Connect

    Petersen, Michael David

    2001-01-01

    Using computer simulations, the performance of several CdTe based photovoltaic structures has been studied. The advantages and disadvantages of band gap grading, through the use of (Zn, Cd)Te, have also been investigated in these structures. Grading at the front interface between a CdS window layer and a CdTe absorber layer, can arise due to interdiffusion between the materials during growth or due to the intentional variation of the material composition. This grading has been shown to improve certain performance metrics, such as the open-circuit voltage, while degrading others, such as the fill factor, depending on the amount and distance of the grading. The presence of a Schottky barrier as the back contact has also been shown to degrade the photovoltaic performance of the device, resulting in a characteristic IV curve. However, with the appropriate band gap grading at the back interface, it has been shown that the performance can be enhanced through more efficient carrier collection. These results were then correlated with experimental observations of the performance degradation in devices subjected to light and heat stress.

  18. Numerical Simulation of the Performance Characteristics, Instability, and Effects of Band Gap Grading in Cadmium Telluride Based Photovoltaic Devices

    SciTech Connect

    Petersen, Michael David

    2001-05-01

    Using computer simulations, the performance of several CdTe based photovoltaic structures has been studied. The advantages and disadvantages of band gap grading, through the use of (Zn,Cd)Te, have also been investigated in these structures. Grading at the front interface between a CdS window layer and a CdTe absorber layer, can arise due to interdiffusion between the materials during growth or due to the intentional variation of the material composition. This grading has been shown to improve certain performance metrics, such as the open-circuit voltage, while degrading others, such as the fill factor, depending on the amount and distance of the grading. The presence of a Schottky barrier as the back contact has also been shown to degrade the photovoltaic performance of the device, resulting in a characteristic IV curve. However, with the appropriate band gap grading at the back interface, it has been shown that the performance can be enhanced through more efficient carrier collection. These results were then correlated with experimental observations of the performance degradation in devices subjected to light and heat stress.

  19. Time-dependent changes in copper indium gallium (di)selenide and cadmium telluride photovoltaic modules due to outdoor exposure

    NASA Astrophysics Data System (ADS)

    Choi, Sungwoo; Sato, Ritsuko; Ishii, Tetsuyuki; Chiba, Yasuo; Masuda, Atsushi

    2017-08-01

    The performance of photovoltaic (PV) modules deteriorates with time due to outdoor exposure. We investigated the time-dependent changes in PV modules and evaluated the amount of power generated during their lifetime. Once a year, the exposed modules were removed and measured under standard test conditions using a solar simulator. Their outputs were measured indoors and normalized to nominal values. In addition, the relationship between the indoor measurement and the energy yield for thin-film PV modules will be reported. In CIGS PV modules, the normalized maximum power (P MAX) and performance ratio (PR) differ with the type of module. The P MAX and PR of CdTe PV modules significantly decrease after outdoor exposure for three years. These results help to determine the characteristics of the time-dependent changes in the P MAX of PV modules due to outdoor exposure.

  20. High-efficiency thin-film cadmium telluride photovoltaic cells. Annual technical report, January 20, 1996--January 19, 1997

    SciTech Connect

    Compaan, A D; Bohn, R G; Contreras-Puente, G

    1997-08-01

    The University of Toledo photovoltaics group has been instrumental in developing rf sputtering for CDs/CdTe thin-film solar cells. During the third phase of the present contract our work focussed on efforts to determine factors which limit the efficiency in our {open_quotes}all-sputtered{close_quotes} thin-film CdTe solar cells on soda-lime glass. We find that our all-sputtered cells, which are deposited at substantially lower temperature than those by sublimation or vapor deposition, require less aggressive CdCl{sub 2} treatments than do other deposition techniques and this is presumably related to CDs/CdTe interdiffusion. The CDs/CdTe interdiffusion process has been studied by several methods, including photoluminescence and capacitance-voltage measurements. Furthermore, we have deposited special thin bilayer films on quartz and borosilicate glass. Interdiffusion in these thin bilayers have been probed by Rutherford backscattering, with collaborators at Case Western Reserve University, and grazing incidence x-ray scattering (GIXS), with collaborators at the University at Buffalo and Brookhaven National Lab. Also, in order better to understand the properties of the ternary alloy material, we used laser physical vapor deposition to prepare a series of CdS{sub x}Te{sub 1-x} films on borosilicate glass. The composition of the alloy films was determined by wavelength dispersive x-ray spectroscopy at NREL. These films are currently being investigated by us and other groups at NREL and IEC.

  1. Cadmium mercury telluride infrared detectors

    NASA Astrophysics Data System (ADS)

    Elliott, C. T.

    Signal Processing In The Element (SPITE) detectors used in high performance thermal imaging systems are discussed. Developments to improve spatial and temperature resolution are outlined. Focal plane arrays of electronically scanned two-dimensional arrays of CMT detectors are treated. Use of photovoltaic CMT detectors hybridized with silicon addressing circuits is reported. Research to raise the operating temperature of infrared detectors is summarized.

  2. Effects of nanoassembly on the optoelectronic properties of cadmium telluride - zinc oxide nanocomposite thin films for use in photovoltaic devices

    NASA Astrophysics Data System (ADS)

    Beal, Russell Joseph

    Quantum-scale semiconductors embedded in an electrically-active matrix have the potential to improve photovoltaic (PV) device power conversion efficiencies by allowing the solar spectral absorption and photocarrier transport properties to be tuned through the control of short and long range structure. In the present work, the effects of phase assembly on quantum confinement effects and carrier transport were investigated in CdTe - ZnO nanocomposite thin films for use as a spectrally sensitized n-type heterojunction element. The nanocomposites were deposited via a dual-source, sequential radio-frequency (RF) sputter technique that offers the unique opportunity for in-situ control of the CdTe phase spatial distribution within the ZnO matrix. The manipulation of the spatial distribution of the CdTe nanophase allowed for variation in the electromagnetic coupling interactions between semiconductor domains and accompanying changes in the effective carrier confinement volume and associated spectral absorption properties. Deposition conditions favoring CdTe connectivity had a red shift in absorption energy onset in comparison to phase assemblies with a more isolated CdTe phase. While manipulating the absorption properties is of significant interest, the electronic behavior of the nanocomposite must also be considered. The continuity of both the matrix and the CdTe influenced the mobility pathways for carriers generated within their respective phases. Photoconductivity of the nanocomposite, dependent upon the combined influences of nanostructure-mediated optical absorption and carrier transport path, increased with an increased semiconductor nanoparticle number density along the applied field direction. Mobility of the carriers in the nanocomposite was further mediated by the interface between the ZnO and CdTe nanophases which acts as a source of carrier scattering centers. These effects were influenced by low temperature annealing of the nanocomposite which served to

  3. Towards understanding junction degradation in cadmium telluride solar cells

    SciTech Connect

    Nardone, Marco

    2014-06-21

    A degradation mechanism in cadmium telluride (CdTe/CdS) solar cells is investigated using time-dependent numerical modeling to simulate various temperature, bias, and illumination stress conditions. The physical mechanism is based on defect generation rates that are proportional to nonequilibrium charge carrier concentrations. It is found that a commonly observed degradation mode for CdTe/CdS solar cells can be reproduced only if defects are allowed to form in a narrow region of the absorber layer close to the CdTe/CdS junction. A key aspect of this junction degradation is that both mid-gap donor and shallow acceptor-type defects must be generated simultaneously in response to photo-excitation or applied bias. The numerical approach employed here can be extended to study other mechanisms for any photovoltaic technology.

  4. Cadmium telluride in tellurium—cadmium films consisting of ultradispersed particles

    NASA Astrophysics Data System (ADS)

    Tuleushev, Yu. Zh.; Volodin, V. N.; Migunova, A. A.; Lisitsyn, V. N.

    2015-08-01

    Solid solutions of tellurium in cadmium, cadmium in tellurium, and cadmium in cadmium telluride synthesized during sputtering are formed for the first time by ion-plasma sputtering and the codeposition of ultradispersed Te and Cd particle fluxes onto substrates moving with respect to the fluxes. This fact supports thermofluctuation melting and coalescence of small particles. The lattice parameter of cadmium telluride, which coexists with an amorphous solid solution of tellurium in cadmium in a coating, is smaller than the tabulated value and reaches it when the cadmium concentration in a coating increases to 70 at %. The lattice parameter of the fcc lattice of cadmium telluride increases with the cadmium concentration in a coating according to the linear relation a = 0.0002CCd + 0.6346 nm (where CCd is the cadmium concentration in the coating, at %), which is likely to indicate a certain broadening of the homogeneity area. The estimation of the particle size shows that the cadmium telluride grain size is 10-15 nm, which implies that the coatings are nanocrystalline. The absorption and transmission spectra of the tellurium—cadmium films at the fundamental absorption edge demonstrate that their energy gaps are larger than that of stoichiometric CdTe, which can be explained by the experimental conditions of crystal structure formation.

  5. One-Dimensional Fast Transient Simulator for Modeling Cadmium Sulfide/Cadmium Telluride Solar Cells

    NASA Astrophysics Data System (ADS)

    Guo, Da

    Solar energy, including solar heating, solar architecture, solar thermal electricity and solar photovoltaics, is one of the primary alternative energy sources to fossil fuel. Being one of the most important techniques, significant research has been conducted in solar cell efficiency improvement. Simulation of various structures and materials of solar cells provides a deeper understanding of device operation and ways to improve their efficiency. Over the last two decades, polycrystalline thin-film Cadmium-Sulfide and Cadmium-Telluride (CdS/CdTe) solar cells fabricated on glass substrates have been considered as one of the most promising candidate in the photovoltaic technologies, for their similar efficiency and low costs when compared to traditional silicon-based solar cells. In this work a fast one dimensional time-dependent/steady-state drift-diffusion simulator, accelerated by adaptive non-uniform mesh and automatic time-step control, for modeling solar cells has been developed and has been used to simulate a CdS/CdTe solar cell. These models are used to reproduce transients of carrier transport in response to step-function signals of different bias and varied light intensity. The time-step control models are also used to help convergence in steady-state simulations where constrained material constants, such as carrier lifetimes in the order of nanosecond and carrier mobility in the order of 100 cm2/Vs, must be applied.

  6. Thin film cadmium telluride, zinc telluride, and mercury zinc telluride solar cells. Final subcontract report, 1 July 1988--31 December 1991

    SciTech Connect

    Chu, T.L.

    1992-04-01

    This report describes research to demonstrate (1) thin film cadmium telluride solar cells with a quantum efficiency of 75% or higher at 0. 44 {mu}m and a photovoltaic efficiency of 11.5% or greater, and (2) thin film zinc telluride and mercury zinc telluride solar cells with a transparency to sub-band-gap radiation of 65% and a photovoltaic conversion efficiency of 5% and 8%, respectively. Work was directed at (1) depositing transparent conducting semiconductor films by solution growth and metal-organic chemical vapor deposition (MOCVD) technique, (2) depositing CdTe films by close-spaced sublimation (CSS) and MOCVD techniques, (3) preparing and evaluating thin film CdTe solar cells, and (4) preparing and characterizing thin film ZnTe, CD{sub 1-x}Zn{sub 1-x}Te, and Hg{sub 1-x}Zn{sub x}Te solar cells. The deposition of CdS films from aqueous solutions was investigated in detail, and their crystallographic, optical, and electrical properties were characterized. CdTe films were deposited from DMCd and DIPTe at 400{degrees}C using TEGa and AsH{sub 3} as dopants. CdTe films deposited by CSS had significantly better microstructures than those deposited by MOCVD. Deep energy states in CdTe films deposited by CSS and MOCVD were investigated. Thin films of ZnTe, Cd{sub 1- x}Zn{sub x}Te, and Hg{sub 1-x}Zn{sub x}Te were deposited by MOCVD, and their crystallographic, optical, and electrical properties were characterized. 67 refs.

  7. The Cadmium Zinc Telluride Imager on AstroSat

    NASA Astrophysics Data System (ADS)

    Bhalerao, V.; Bhattacharya, D.; Vibhute, A.; Pawar, P.; Rao, A. R.; Hingar, M. K.; Khanna, Rakesh; Kutty, A. P. K.; Malkar, J. P.; Patil, M. H.; Arora, Y. K.; Sinha, S.; Priya, P.; Samuel, Essy; Sreekumar, S.; Vinod, P.; Mithun, N. P. S.; Vadawale, S. V.; Vagshette, N.; Navalgund, K. H.; Sarma, K. S.; Pandiyan, R.; Seetha, S.; Subbarao, K.

    2017-06-01

    The Cadmium Zinc Telluride Imager (CZTI) is a high energy, wide-field imaging instrument on AstroSat. CZTI's namesake Cadmium Zinc Telluride detectors cover an energy range from 20 keV to >200 keV, with 11% energy resolution at 60 keV. The coded aperture mask attains an angular resolution of 17^' over a 4.6° × 4.6° (FWHM) field-of-view. CZTI functions as an open detector above 100 keV, continuously sensitive to GRBs and other transients in about 30% of the sky. The pixellated detectors are sensitive to polarization above ˜ 100 keV, with exciting possibilities for polarization studies of transients and bright persistent sources. In this paper, we provide details of the complete CZTI instrument, detectors, coded aperture mask, mechanical and electronic configuration, as well as data and products.

  8. Spectral properties of powder preparations of cadmium telluride and cadmium selenide with controlled nonstoichiometry

    NASA Astrophysics Data System (ADS)

    Khomyakov, A. V.; Mozhevitina, E. N.; Kuz'min, V. V.; Kon'kova, N. A.; Avetissov, I. Ch.

    2015-03-01

    The reflection spectra of powder preparations of cadmium telluride and cadmium selenide with different contents of overstoichiometric components have been investigated in the range of 800-1700 nm. The reflectance is found to be maximum for samples with compositions close to stoichiometric. An increase in the concentration of overstoichiometric cadmium more radically reduces the reflectance in comparison with preparations containing excess chalcogen. It is shown that halftone images in the near-IR range can be formed by using of these materials.

  9. Removal of CdTe in acidic media by magnetic ion-exchange resin: a potential recycling methodology for cadmium telluride photovoltaic waste.

    PubMed

    Zhang, Teng; Dong, Zebin; Qu, Fei; Ding, Fazhu; Peng, Xingyu; Wang, Hongyan; Gu, Hongwei

    2014-08-30

    Sulfonated magnetic microspheres (PSt-DVB-SNa MPs) have been successfully prepared as adsorbents via an aqueous suspension polymerization of styrene-divinylbenzene and a sulfonation reaction successively. The resulting adsorbents were confirmed by means of Fourier transform infrared spectra (FT-IR), X-ray diffraction (XRD), transmission electron microscope (TEM), scanning electron microscope equipped with an energy dispersive spectrometer (SEM-EDS) and vibrating sample magnetometer (VSM). The leaching process of CdTe was optimized, and the removal efficiency of Cd and Te from the leaching solution was investigated. The adsorbents could directly remove all cations of Cd and Te from a highly acidic leaching solution of CdTe. The adsorption process for Cd and Te reached equilibrium in a few minutes and this process highly depended on the dosage of adsorbents and the affinity of sulfonate groups with cations. Because of its good adsorption capacity in strong acidic media, high adsorbing rate, and efficient magnetic separation from the solution, PSt-DVB-SNa MPs is expected to be an ideal material for the recycling of CdTe photovoltaic waste. Copyright © 2014 Elsevier B.V. All rights reserved.

  10. Photoreflectance Study of Boron Ion-Implanted (100) Cadmium Telluride

    NASA Technical Reports Server (NTRS)

    Amirtharaj, P. M.; Odell, M. S.; Bowman, R. C., Jr.; Alt, R. L.

    1988-01-01

    Ion implanted (100) cadmium telluride was studied using the contactless technique of photoreflectance. The implantations were performed using 50- to 400-keV boron ions to a maximum dosage of 1.5 x 10(16)/sq cm, and the annealing was accomplished at 500 C under vacuum. The spectral measurements were made at 77 K near the E(0) and E(1) critical points; all the spectra were computer-fitted to Aspnes' theory. The spectral line shapes from the ion damaged, partially recovered and undamaged, or fully recovered regions could be identified, and the respective volume fraction of each phase was estimated.

  11. Photoreflectance Study of Boron Ion-Implanted (100) Cadmium Telluride

    NASA Technical Reports Server (NTRS)

    Amirtharaj, P. M.; Odell, M. S.; Bowman, R. C., Jr.; Alt, R. L.

    1988-01-01

    Ion implanted (100) cadmium telluride was studied using the contactless technique of photoreflectance. The implantations were performed using 50- to 400-keV boron ions to a maximum dosage of 1.5 x 10(16)/sq cm, and the annealing was accomplished at 500 C under vacuum. The spectral measurements were made at 77 K near the E(0) and E(1) critical points; all the spectra were computer-fitted to Aspnes' theory. The spectral line shapes from the ion damaged, partially recovered and undamaged, or fully recovered regions could be identified, and the respective volume fraction of each phase was estimated.

  12. Local Stoichiometry and Atomic Interdiffusion during Reactive Metal/Mercury-Cadmium-Telluride Junction Formation.

    DTIC Science & Technology

    1987-10-23

    CHART NATIONAL BUREAU OF STANDARDS- 1963-A IfP LOCAL STOICHIOMETRY AND ATOMIC INTERDIFFUSION DURING REACTIVE METAL/ MERCURY- CADMIUM -TELLURIDE...TITLE rand Subtitle) S. TYPE OF REPORT PERIOED LOCAL STOICHIOMETRY AND ATOMIC INTERDIFFUSION Interim, 1/8 DURING REACTIVE METAL/MERCURY- CADMIUM ...identliy by block nuembw) Ag, Ge and Sm overlayers on Mercury- Cadmium -Telluride surfaces exhibit widely different interface reactivity and yield a

  13. Polycrystalline thin film cadmium telluride solar cells fabricated by electrodeposition

    NASA Astrophysics Data System (ADS)

    Trefny, J. U.; Furtak, T. E.; Williamson, D. L.; Kim, D.

    1994-07-01

    This report describes the principal results of work performed during the second year of a 3-year program at the Colorado School of Mines (CSM). The work on transparent conducting oxides was carried out primarily by CSM students at NREL and is described in three publications listed in Appendix C. The high-quality ZnO produced from the work was incorporated into a copper indium diselenide cell that exhibited a world-record efficiency of 16.4%. Much of the time was devoted to the improvement of cadmium sulfide films deposited by chemical bath deposition methods and annealed with or without a cadmium chloride treatment. Progress was also made in the electrochemical deposition of cadmium telluride. High-quality films yielding CdS/CdTe/Au cells of greater than 10% efficiency are now being produced on a regular basis. We explored the use of zinc telluride back contacts to form an n-i-p cell structure as previously used by Ametek. We began small-angle x-ray scattering (SAXS) studies to characterize crystal structures, residual stresses, and microstructures of both CdTe and CdS. Large SAXS signals were observed in CdS, most likely because of scattering from gain boundaries. The signals observed to date from CdTe are much weaker, indicating a more homogeneous microstructure. We began to use the ADEPT modeling program, developed at Purdue University, to guide our understanding of the CdS/CdTe cell physics and the improvements that will most likely lead to significantly enhanced efficiencies.

  14. A preliminary study on the use of cadmium telluride detectors in the scintigraphy of thyroid gland

    NASA Astrophysics Data System (ADS)

    Mancini, A. M.; Quirini, A.; Vasanelli, L.; Bacci, C.; Bernabei, R.; Pani, R.; Rispoli, B.; Ballesio, P. L.; Furetta, C.

    1981-10-01

    A cadmium telluride gamma detector has been used for monitoring the activity of a radioactive tracer in a thyroid gland. Preliminary measurements are reported in comparison with those obtained with a standard NaI(Tl) scintillator.

  15. Ion implantation of erbium into polycrystalline cadmium telluride

    SciTech Connect

    Ushakov, V. V. Klevkov, Yu. V.; Dravin, V. A.

    2015-05-15

    The specific features of the ion implantation of polycrystalline cadmium telluride with grains 20–1000 μm in dimensions are studied. The choice of erbium is motivated by the possibility of using rare-earth elements as luminescent “probes” in studies of the defect and impurity composition of materials and modification of the composition by various technological treatments. From the microphotoluminescence data, it is found that, with decreasing crystal-grain dimensions, the degree of radiation stability of the material is increased. Microphotoluminescence topography of the samples shows the efficiency of the rare-earth probe in detecting regions with higher impurity and defect concentrations, including regions of intergrain boundaries.

  16. Cadmium Telluride Solar Cells with PEDOT:PSS Back Contact

    NASA Astrophysics Data System (ADS)

    Mount, Michael; Duarte, Fernanda; Paudel, Naba; Yan, Yanfa; Wang, Weining

    Cadmium Telluride (CdTe) solar cell is one of the most promising thin film solar cells and its highest efficiency has reached 21%. To keep improving the efficiency of CdTe solar cells, a few issues need to be addressed, one of which is the back contact. The back contact of CdTe solar cells are mostly Cu-base, and the problem with Cu-based back contact is that Cu diffuses into the grain boundary and into the CdS/CdTe junction, causing degradation problem at high temperature and under illumination. To continue improving the efficiency of CdTe/CdS solar cells, a good ohmic back contact with high work function and long term stability is needed. In this work, we report our studies on the potential of conducting polymer being used as the back contact of CdTe/CdS solar cells. Conducting polymers are good candidates because they have high work functions and high conductivities, are easy to process, and cost less, meeting all the requirements of a good ohmic back contact for CdTe. In our studies, we used poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS) with different conductivities and compared them with traditional Cu-based back contact. It was observed that the CdTe solar cell performance improves as the conductivity of the PEDOT:PSS increase, and the efficiency (9.1%) is approaching those with traditional Cu/Au back contact (12.5%). Cadmium Telluride Solar Cells with PEDOT:PSS Back Contact.

  17. Compensation mechanism of bromine dopants in cadmium telluride single crystals

    SciTech Connect

    Bolotnikov, A. E.; Fochuk, P. M.; Verzhak, Ye. V.; Parashchuk, T. O.; Freik, D. M.; Panchuk, O. E.; James, R. B.; Gorichok, I. V.

    2015-01-02

    We grew single crystals of cadmium telluride, doped with bromine by the Bridgman method, annealed them under a cadmium overpressure (PCd = 10² - 10⁵ Pa) at 800-1100 K, and investigated their electrical properties at high- and low-temperature. The influence of impurities on the crystals' electrical properties were analyzed using the defect subsystem model; the model includes the possibility of the formation of point intrinsic defects (V²⁻Cd, Cd²⁺i, V²⁺Te, Te²⁻i), and substitutional ones (Br⁰Te, Br⁺Te), as well as complexes of point defects, i.e., (Br⁺Te V²⁻Cd)⁻ and (2Br⁺Te V²⁻Cd)⁰. We established the concentration dependence between free charge carriers and the parameters of the annealing process. Here, n(T) and n(PCd) are determined by two dominant defects – Br⁺Te and (2Br⁺Te V²⁻Cd)⁰. Their content varies with the annealing temperature and the vapor pressure of the component; the concentration of other defects is much smaller and almost does not affect the electron density.

  18. Compensation mechanism of bromine dopants in cadmium telluride single crystals

    DOE PAGES

    Bolotnikov, A. E.; Fochuk, P. M.; Verzhak, Ye. V.; ...

    2015-01-02

    We grew single crystals of cadmium telluride, doped with bromine by the Bridgman method, annealed them under a cadmium overpressure (PCd = 10² - 10⁵ Pa) at 800-1100 K, and investigated their electrical properties at high- and low-temperature. The influence of impurities on the crystals' electrical properties were analyzed using the defect subsystem model; the model includes the possibility of the formation of point intrinsic defects (V²⁻Cd, Cd²⁺i, V²⁺Te, Te²⁻i), and substitutional ones (Br⁰Te, Br⁺Te), as well as complexes of point defects, i.e., (Br⁺Te V²⁻Cd)⁻ and (2Br⁺Te V²⁻Cd)⁰. We established the concentration dependence between free charge carriers and themore » parameters of the annealing process. Here, n(T) and n(PCd) are determined by two dominant defects – Br⁺Te and (2Br⁺Te V²⁻Cd)⁰. Their content varies with the annealing temperature and the vapor pressure of the component; the concentration of other defects is much smaller and almost does not affect the electron density.« less

  19. Electrical Characterization of Thin Film Cadmium Telluride Electrodeposited from Tri-N Telluride

    NASA Astrophysics Data System (ADS)

    von Windheim, Jesko A.

    copper. The decreasing carrier concentration was accompanied by a decrease in resistivity and a decrease in mobility. The effect of dopant density on the resistivity of the polycrystalline cadmium telluride films, deposited from tri-n-butylphosphine telluride, can consistently be described by a grain boundary model. In this model charging of grain boundary states results in a barrier and can affect the carrier density. According to the model, dopants accumulated at grain boundaries do not generate carriers and do not affect the density of interface states.

  20. Health, safety and environmental issues relating to cadmium usage in photovoltaic energy systems

    SciTech Connect

    Moskowitz, P.D.; Fthenakis, V.M. ); Zweibel, K. )

    1989-12-01

    This paper discusses the current technology base and hazards associated with two promising thin-film photovoltaic cells that contain cadmium compounds -- cadmium telluride (CdTe) and copper indium diselenide (CuInSe{sub 2}). More specifically, this paper summarizes the toxicological information on cadmium (Cd) compounds; evaluates potential health, safety and environmental hazards associated with cadmium usage in the photovoltaics industry; describes regulatory requirements associated with the use, handling and disposal of cadmium compounds; and lists management options to permit the safe and continued use of these materials. Handling of cadmium in photovoltaic production can present hazards to health, safety and the environment. Prior recognition of these hazards can allow device manufacturers and regulators to implement appropriate and readily available hazard management strategies. Hazards associated with product use (i.e., array fires) and disposal remain controversial and partially unresolved. The most likely effects that could be expected would be those associated with chronic low-level exposures to cadmium wastes. Because of the general immobility of the cadmium present in these devices and availability of environmental and biomonitoring protocols, chronic hazards can be monitored, and remediated if necessary. Nevertheless, concern about cadmium hazards should continue to be emphasized to ensure that health, safety and environmental issues are properly managed. At the same time, the potential role that these systems can play in ameliorating some important health and environmental hazards related to other energy systems should not be ignored. 27 refs., 5 figs., 2 tabs.

  1. A cadmium-zinc-telluride crystal array spectrometer

    SciTech Connect

    H. R. McHugh; W. Quam; T. DeVore; R. Vogle; J. Weslowski

    2003-09-01

    This paper describes a gamma detector employing an array of eight cadmium-zinc-telluride (CZT) crystals configured as a high resolution gamma ray spectrometer. This detector is part of a more complex instrument that identifies the isotope,displays this information, and records the gamma spectrum. Various alarms and other operator features are incorporated in this battery operated rugged instrument. The CZT detector is the key component of this instrument and will be described in detail in this paper. We have made extensive spectral measurements of the usual laboratory gamma sources, common medical isotopes, and various Special Nuclear Materials (SNM) with this detector. Some of these data will be presented as spectra. We will also present energy resolution and detection efficiency for the basic 8-crystal array. Additional data will also be presented for a 32-crystal array. The basic 8-crystal array development was completed two years ago, and the system electronic design has been imp roved recently. This has resulted in significantly improved noise performance. We expect to have a much smaller detector package, using 8 crystals, in a few months. This package will use flip-chip packaging to reduce the electronics physical size by a factor of 5.

  2. Ambient temperature cadmium zinc telluride radiation detector and amplifier circuit

    DOEpatents

    McQuaid, James H.; Lavietes, Anthony D.

    1998-05-29

    A low noise, low power consumption, compact, ambient temperature signal amplifier for a Cadmium Zinc Telluride (CZT) radiation detector. The amplifier can be used within a larger system (e.g., including a multi-channel analyzer) to allow isotopic analysis of radionuclides in the field. In one embodiment, the circuit stages of the low power, low noise amplifier are constructed using integrated circuit (IC) amplifiers , rather than discrete components, and include a very low noise, high gain, high bandwidth dual part preamplification stage, an amplification stage, and an filter stage. The low noise, low power consumption, compact, ambient temperature amplifier enables the CZT detector to achieve both the efficiency required to determine the presence of radio nuclides and the resolution necessary to perform isotopic analysis to perform nuclear material identification. The present low noise, low power, compact, ambient temperature amplifier enables a CZT detector to achieve resolution of less than 3% full width at half maximum at 122 keV for a Cobalt-57 isotope source. By using IC circuits and using only a single 12 volt supply and ground, the novel amplifier provides significant power savings and is well suited for prolonged portable in-field use and does not require heavy, bulky power supply components.

  3. Ambient temperature cadmium zinc telluride radiation detector and amplifier circuit

    DOEpatents

    McQuaid, J.H.; Lavietes, A.D.

    1998-05-26

    A low noise, low power consumption, compact, ambient temperature signal amplifier for a Cadmium Zinc Telluride (CZT) radiation detector is disclosed. The amplifier can be used within a larger system (e.g., including a multi-channel analyzer) to allow isotopic analysis of radionuclides in the field. In one embodiment, the circuit stages of the low power, low noise amplifier are constructed using integrated circuit (IC) amplifiers , rather than discrete components, and include a very low noise, high gain, high bandwidth dual part preamplification stage, an amplification stage, and an filter stage. The low noise, low power consumption, compact, ambient temperature amplifier enables the CZT detector to achieve both the efficiency required to determine the presence of radionuclides and the resolution necessary to perform isotopic analysis to perform nuclear material identification. The present low noise, low power, compact, ambient temperature amplifier enables a CZT detector to achieve resolution of less than 3% full width at half maximum at 122 keV for a Cobalt-57 isotope source. By using IC circuits and using only a single 12 volt supply and ground, the novel amplifier provides significant power savings and is well suited for prolonged portable in-field use and does not require heavy, bulky power supply components. 9 figs.

  4. Precision timing detectors with cadmium-telluride sensor

    NASA Astrophysics Data System (ADS)

    Bornheim, A.; Pena, C.; Spiropulu, M.; Xie, S.; Zhang, Z.

    2017-09-01

    Precision timing detectors for high energy physics experiments with temporal resolutions of a few 10 ps are of pivotal importance to master the challenges posed by the highest energy particle accelerators such as the LHC. Calorimetric timing measurements have been a focus of recent research, enabled by exploiting the temporal coherence of electromagnetic showers. Scintillating crystals with high light yield as well as silicon sensors are viable sensitive materials for sampling calorimeters. Silicon sensors have very high efficiency for charged particles. However, their sensitivity to photons, which comprise a large fraction of the electromagnetic shower, is limited. To enhance the efficiency of detecting photons, materials with higher atomic numbers than silicon are preferable. In this paper we present test beam measurements with a Cadmium-Telluride (CdTe) sensor as the active element of a secondary emission calorimeter with focus on the timing performance of the detector. A Schottky type CdTe sensor with an active area of 1cm2 and a thickness of 1 mm is used in an arrangement with tungsten and lead absorbers. Measurements are performed with electron beams in the energy range from 2 GeV to 200 GeV. A timing resolution of 20 ps is achieved under the best conditions.

  5. Vapor crystal growth technology development: Application to cadmium telluride

    NASA Technical Reports Server (NTRS)

    Rosenberger, Franz; Banish, Michael; Duval, Walter M. B.

    1991-01-01

    Growth of bulk crystals by physical vapor transport was developed and applied to cadmium telluride. The technology makes use of effusive ampoules, in which part of the vapor contents escapes to a vacuum shroud through defined leaks during the growth process. This approach has the advantage over traditional sealed ampoule techniques that impurity vapors and excess vapor constituents are continuously removed from the vicinity of the growing crystal. Thus, growth rates are obtained routinely at magnitudes that are rather difficult to achieve in closed ampoules. Other advantages of this effusive ampoule physical vapor transport (EAPVT) technique include the predetermination of transport rates based on simple fluid dynamics and engineering considerations, and the growth of the crystal from close to congruent vapors, which largely alleviates the compositional nonuniformities resulting from buoyancy driven convective transport. After concisely reviewing earlier work on improving transport rates, nucleation control, and minimization of crystal wall interactions in vapor crystal growth, a detail account is given of the largely computer controlled EAPVT experimentation.

  6. Bioinspired inimitable cadmium telluride quantum dots for bioimaging purposes.

    PubMed

    Pawar, Vinay; Kumar, Ameeta Ravi; Zinjarde, Smita; Gosavi, Suresh

    2013-06-01

    Synthesis of quantum nanoparticles of specific size, shape and composition are an aspect important in nanotechnology research. Although these nanostructures are routinely synthesized by chemical routes, the use of microorganisms has emerged as a promising option. The synthesis of cadmium telluride (CdTe) quantum dots by two hitherto unreported marine bacteria (Bacillus pumilus and Serratia marcescens) is reported here. Ultraviolet-visible (UV-vis) spectroscopy indicated the synthesis of CdTe nanoparticles and X-ray diffraction (XRD) patterns implicated their crystalline face-centered cubic nature. The size of the synthesized CdTe nanostructures estimated by XRD and dynamic light scattering (DLS) analysis was found to be approximately 10 nm. Photoluminescence (PL) studies were used to confirm the fluorescence properties of these semi-conducting nanoparticles. Scanning electron microscope (SEM) analysis showed the presence of well-defined nanostructures and energy dispersive spectra (EDS) confirmed the microbial synthesis of these nanoparticles. These bio-inspired CdTe nanostructures could be effectively used in imaging of yeast and animal cells. This work thus describes a cost-effective green method for synthesizing highly fluorescent biocompatible CdTe nanoparticles suitable for bio-labeling purposes.

  7. Preliminary uranium enrichment analysis results using cadmium zinc telluride detectors

    NASA Astrophysics Data System (ADS)

    Lavietes, Anthony D.; McQuaid, James H.; Paulus, T. J.

    1996-10-01

    Lawrence Livermore National Laboratory (LLNL) and EG and G ORTEC have jointly developed a portable ambient-temperature detection system that can be used in a number of application scenarios. The detection system uses a planar cadmium zinc telluride (CZT) detector with custom-designed detector support electronics developed at LLNL and is based on the recently released MicroNOMAD multichannel analyzer (MCA) produced by ORTEC. Spectral analysis is performed using software developed at LLNL that was originally designed for use with high-purity germanium (HPGe) detector systems. In one application, the CZT detection system determines uranium enrichments ranging from less than 3% to over 75% to within accuracies of 20%. The analysis was performed using sample sizes of 200 g or larger and acquisition times of 30 min. We have demonstrated the capabilities of this system by analyzing the spectra gathered by the CZT detection system from uranium sources of several enrichments. These experiments demonstrate that current CZT detectors can, in some cases, approach performance criteria that were previously the exclusive domain of larger HPGe detector systems.

  8. Induced Positron Annihiliation Investigation of Cadmium Zinc Telluride Crystal Microstructures

    SciTech Connect

    D. W. Akers

    2005-06-01

    Cadmium-Zinc-Telluride (CZT) crystals are used in semiconductor radiation detectors for the detection of x-ray and gamma radiation. However, production of detector grade crystals is difficult as small variations in compositional uniformity and primarily the zinc content can significantly affect the ability of the CZT crystal to function as a radiation detector. Currently there are no known nondestructive methods that can be used to identify detector grade crystals. The current test method is to fabricate and test the detector to determine if the crystal is sufficiently uniform and of the correct composition to be considered a detector grade crystal. Consequently, nondestructive detection methods are needed to identify detector grade crystals prior to the fabrication process. The purpose of this feasibility study was to perform a preliminary assessment of the ability of several new, nondestructive technologies based on Induced Positron Annihilation (IPA) to determine if detector grade CZT crystals can be identified. Results of measurements performed on specimens from Fisk University and EV Products, Inc. indicate that both the near surface Distributed Source Positron Annihilation (up to 3 mm penetration) and the volumetric Photon Induced Positron Annihilation methods may be suitable for determining CZT crystal quality. Further work on CZT crystals with a broader range of compositions and detector characteristics is needed to provide a well defined, calibrated, method for assessing CZT crystal quality.

  9. Cadmium telluride (CdTe) and cadmium selenide (CdSe) leaching behavior and surface chemistry in response to pH and O2.

    PubMed

    Zeng, Chao; Ramos-Ruiz, Adriana; Field, Jim A; Sierra-Alvarez, Reyes

    2015-05-01

    Cadmium telluride (CdTe) and cadmium selenide (CdSe) are increasingly being applied in photovoltaic solar cells and electronic components. A major concern is the public health and ecological risks associated with the potential release of toxic cadmium, tellurium, and/or selenium species. In this study, different tests were applied to investigate the leaching behavior of CdTe and CdSe in solutions simulating landfill leachate. CdTe showed a comparatively high leaching potential. In the Toxicity Characteristic Leaching Procedure (TCLP) and Waste Extraction Test (WET), the concentrations of cadmium released from CdTe were about 1500 and 260 times higher than the regulatory limit (1 mg/L). In contrast, CdSe was relatively stable and dissolved selenium in both leaching tests was below the regulatory limit (1 mg/L). Nonetheless, the regulatory limit for cadmium was exceeded by 5- to 6- fold in both tests. Experiments performed under different pH and redox conditions confirmed a marked enhancement in CdTe and CdSe dissolution both at acidic pH and under aerobic conditions. These findings are in agreement with thermodynamic predictions. Taken as a whole, the results indicate that recycling of decommissioned CdTe-containing devices is desirable to prevent the potential environmental release of toxic cadmium and tellurium in municipal landfills.

  10. Health, safety and environmental issues relating to cadmium usage in photovoltaic energy systems

    SciTech Connect

    Moskowitz, P.D.; Fthenakis, V.M. ); Zweibel, K. )

    1990-01-01

    This paper discusses the current technology base and hazards associated with two promising thin-film photovoltaic cells that contain cadmium compounds--cadmium telluride (CdTe) and copper indium deselenide (CuInSe{sub 2}). More specifically, this paper summarized the toxicological information on cadmium (Cd) compounds;evaluates potential health, safety and environmental hazards associated with cadmium usage in the photovoltaics industry; describes regulatory requirements associated with the use, handling and disposal of cadmium compounds; and lists management options to permit the safe and continued use of these materials. Handling of cadmium in photovoltaic production can present hazards to health, safety and the environment. Prior recognition of these hazards can allow device manufacturers and regulators to implement appropriate and readily available hazard management strategies. Hazards associated with product use (i.e., array fires) and disposal remain controversial and partially unresolved. The most likely effects that could be expected would be those associated with chronic low-level exposures to cadmium wastes. Because of the general immobility of the cadmium present in these devices and availability of environmental and biomonitoring protocols, chronic hazards can be monitored, and remediated if necessary. 26 refs., 5 figs., 2 tabs.

  11. Correlation of tellurium inclusions and carrier lifetime in detector grade cadmium zinc telluride

    SciTech Connect

    Elshazly, Ezzat S.; Tepper, Gary

    2008-07-28

    Carrier lifetimes and tellurium inclusion densities in detector grade cadmium zinc telluride crystals grown by the high pressure Bridgman method were optically measured using pulsed laser microwave cavity perturbation and infrared microscopy. Excess carriers were produced in the material using a pulsed laser with a wavelength of 1064 nm and pulse width of 7 ns, and the electronic decay was measured at room temperature. Spatial mapping of lifetimes and defect densities in cadmium zinc telluride was performed to determine the relationship between tellurium defect density and trapping. A strong correlation was found between the volume fraction of tellurium inclusions and the carrier trapping time.

  12. Directional Solidification of Mercury Cadmium Telluride in Microgravity

    NASA Technical Reports Server (NTRS)

    Lechoczhy, Sandor L.; Gillies, Donald C.; Szofran, Frank R.; Watring, Dale A.

    1998-01-01

    Mercury cadmium telluride (MCT) has been directionally solidified for ten days in the Advanced Automated Directional Solidification Furnace (AADSF) on the second United States Microgravity Payload Mission (USMP-2). A second growth experiment is planned for the USMP-4 mission in November 1997. Results from USMP-2 demonstrated significant changes between microgravity and ground-based experiments, particularly in the compositional homogeneity. Changes were also observed during the microgravity mission which were dependent on the attitude of the space shuttle and the relative magnitudes of axial and transverse residual accelerations with respect to the growth axis of the crystal. Issues of shuttle operation, especially those concerned with safety and navigation, and the science needs of other payloads dictated the need for changes in attitude. One consequence for solidification of MCT in the USMP4 mission is the desire for a shorter growth time to complete the experiment without subjecting the sample to shuttle maneuvers. By using a seeded technique and a pre-processed boule of MCT with an established diffusion layer quenched into the solid, equilibrium steady state growth can be established within 24 hours, rather than the three days needed in USMP-2. The growth of MCT in AADSF during the USMP-4 mission has been planned to take less than 72 hours with 48 hours of actual growth time. A review of the USMP-2 results will be presented, and the rationale for the USMP-4 explained. Pre-mission ground based tests for the USN4P-4 mission will be presented, as will any available preliminary flight results from the mission.

  13. Current transport mechanisms in mercury cadmium telluride diode

    NASA Astrophysics Data System (ADS)

    Gopal, Vishnu; Li, Qing; He, Jiale; He, Kai; Lin, Chun; Hu, Weida

    2016-08-01

    This paper reports the results of modelling of the current-voltage characteristics (I-V) of a planar mid-wave Mercury Cadmium Telluride photodiode in a gate controlled diode experiment. It is reported that the diode exhibits nearly ideal I-V characteristics under the optimum surface potential leading to the minimal surface leakage current. Deviations from the optimum surface potential lead to non ideal I-V characteristics, indicating a strong relationship between the ideality factor of the diode with its surface leakage current. Diode's I-V characteristics have been modelled over a range of gate voltages from -9 V to -2 V. This range of gate voltages includes accumulation, flat band, and depletion and inversion conditions below the gate structure of the diode. It is shown that the I-V characteristics of the diode can be very well described by (i) thermal diffusion current, (ii) ohmic shunt current, (iii) photo-current due to background illumination, and (iv) excess current that grows by the process of avalanche multiplication in the gate voltage range from -3 V to -5 V that corresponds to the optimum surface potential. Outside the optimum gate voltage range, the origin of the excess current of the diode is associated with its high surface leakage currents. It is reported that the ohmic shunt current model applies to small surface leakage currents. The higher surface leakage currents exhibit a nonlinear shunt behaviour. It is also shown that the observed zero-bias dynamic resistance of the diode over the entire gate voltage range is the sum of ohmic shunt resistance and estimated zero-bias dynamic resistance of the diode from its thermal saturation current.

  14. Current transport mechanisms in mercury cadmium telluride diode

    SciTech Connect

    Gopal, Vishnu E-mail: wdhu@mail.sitp.ac.cn; Li, Qing; He, Jiale; Hu, Weida E-mail: wdhu@mail.sitp.ac.cn; He, Kai; Lin, Chun

    2016-08-28

    This paper reports the results of modelling of the current-voltage characteristics (I-V) of a planar mid-wave Mercury Cadmium Telluride photodiode in a gate controlled diode experiment. It is reported that the diode exhibits nearly ideal I-V characteristics under the optimum surface potential leading to the minimal surface leakage current. Deviations from the optimum surface potential lead to non ideal I–V characteristics, indicating a strong relationship between the ideality factor of the diode with its surface leakage current. Diode's I–V characteristics have been modelled over a range of gate voltages from −9 V to −2 V. This range of gate voltages includes accumulation, flat band, and depletion and inversion conditions below the gate structure of the diode. It is shown that the I–V characteristics of the diode can be very well described by (i) thermal diffusion current, (ii) ohmic shunt current, (iii) photo-current due to background illumination, and (iv) excess current that grows by the process of avalanche multiplication in the gate voltage range from −3 V to −5 V that corresponds to the optimum surface potential. Outside the optimum gate voltage range, the origin of the excess current of the diode is associated with its high surface leakage currents. It is reported that the ohmic shunt current model applies to small surface leakage currents. The higher surface leakage currents exhibit a nonlinear shunt behaviour. It is also shown that the observed zero-bias dynamic resistance of the diode over the entire gate voltage range is the sum of ohmic shunt resistance and estimated zero-bias dynamic resistance of the diode from its thermal saturation current.

  15. INSTRUMENTS AND METHODS OF INVESTIGATION: Cadmium mercury telluride and the new generation of photoelectronic devices

    NASA Astrophysics Data System (ADS)

    Ponomarenko, Vladimir P.

    2003-06-01

    This paper is a 1969-2002 progress report on the development of solid semiconductor solutions of cadmium-mercury tellurides (single crystals and epitaxial layers) as well as of infrared photodetectors based on them (photoresistors and photodiodes, including the array variety).

  16. Growth of Cadmium-Zinc Telluride Crystals by Controlled Seeding Contactless Physical Vapor Transport

    NASA Technical Reports Server (NTRS)

    Palosz, W.; Grasza, K.; Gillies, D.; Jerman, G.

    1996-01-01

    Bulk crystals of cadmium-zinc telluride, 23 mm in diameter and up to 45 grams in weight were grown. Controlled seed formation procedure was used to limit the number of grains in the crystal. Most uniform distribution of ZnTe in the crystals was obtained using excess (Cd + Zn) pressure in the ampoule.

  17. Study of Photo-Conductivity in Nano-Crystalline Cadmium Telluride Thin Films

    SciTech Connect

    Mahesha, M. G.; Bangera, Kasturi V.; Shivakumar, G. K.

    2011-07-15

    Nano crystallite thin films of Cadmium Telluride have been grown on glass substrates by thermal evaporation under vacuum. The growth conditions to get stoichiometric films of the compound have been optimized. The effect of substrate temperature and annealing on photosensitivity has been investigated. Also the effect of deposition parameters and post deposition annealing on rise time and decay time have been studied in detail.

  18. From front contact to back contact in cadmium telluride/cadmium sulfide solar cells: Buffer layer and interfacial layer

    NASA Astrophysics Data System (ADS)

    Roussillon, Yann

    Cadmium telluride (CdTe) polycrystalline thin film solar cells, with their near optimum direct band-gap of 1.4 eV matching almost perfectly the sun radiation spectrum, are a strong contender as a less expensive alternative, among photovoltaic materials, than the more commonly used silicon-based cells. Polycrystalline solar cells are usually deposited over large areas. Such devices often exhibit strong fluctuations (nonuniformities) in electronic properties, which originate from deposition and post-deposition processes, and are detrimental to the device performance. Therefore their effects need to be constrained. A new approach in this work was, when a CdS/CdTe solar cell is exposed to light and immersed in a proper electrolyte, fluctuations in surface potential can drive electrochemical reactions which result in a nonuniform interfacial layer that could balance the original nonuniformity. This approach improved the device efficiency for CdS/CdTe photovoltaic devices from 1--3% to 11--12%. Cadmium sulfide (CdS), used as a window layer and heterojunction partner to CdTe, is electrically inactive and absorb light energies above its band-gap of 2.4 eV. Therefore, to maximize the device efficiency, a thin US layer needs to be used. However, more defects, such as pinholes, are likely to be present in the film, leading to shunts. A resistive transparent layer, called buffer layer, is therefore deposited before CdS. A key observation was that the open-circuit voltage (Voc) for cells made using a buffer layer was high, around 800 mV, similar to cells without buffer layer after Cu doping. The standard p-n junction theory cannot explain this phenomena, therefore an alternative junction mechanism, similar to metal-insulator-semiconductor devices, was developed. Furthermore, alternative Cu-free back-contacts were used in conjunction with a buffer layer. The Voc of the devices was found to be dependent of the back contact used. This change occurs as the back-contact junction

  19. Cadmium Telluride Quantum Dots as a Fluorescence Marker for Adipose Tissue Grafts.

    PubMed

    Deglmann, Claus J; Błażków-Schmalzbauer, Katarzyna; Moorkamp, Sarah; Susha, Andrei S; Herrler, Tanja; Giunta, Riccardo E; Wagner, Ernst; Rogach, Andrey L; Baumeister, Ruediger G; Ogris, Manfred

    2017-02-01

    Plastic and reconstructive surgeons increasingly apply adipose tissue grafting in a clinical setting, although the anticipation of graft survival is insecure. There are only few tools for tracking transplanted fat grafts in vivo.Murine adipose tissue clusters were incubated with negatively charged, mercaptoproprionic acid-coated cadmium telluride quantum dots (QDs) emitting in the dark red or near infrared. The intracellular localization of QDs was studied by confocal laser scanning microscopy.As a result, the adipose tissue clusters showed a proportional increase in fluorescence with increasing concentrations (1, 10, 16, 30, 50 nM) of cadmium telluride QDs. Laser scanning microscopy demonstrated a membrane bound localization of QDs. Vacuoles and cell nuclei of adipocytes were spared by QDs. We conclude that QDs were for the first time proven intracellular in adult adipocytes and demonstrate a strong fluorescence signal. Therefore, they may play an essential role for in vivo tracking of fat grafts.

  20. Development of Cadmium Telluride Detectors for Hard X-ray Astronomy

    NASA Astrophysics Data System (ADS)

    Pike, Sean; Harrison, Fiona; Burnham, Jill; Cook, Rick; Grefenstette, Brian; Madsen, Kristin; Miyasaka, Hiromasa; Rana, Vikram

    2017-08-01

    We present findings on the development of hybrid Cadmium Telluride (CdTe) detectors for applications in space-based X-ray astronomy. In addition to presenting the components and design of the detectors, which consist of 2cm × 2cm × 2mm CdTe crystals mounted on a custom ASIC, we also determine their viability for scientific applications. We present results of spectral calibration using 57Co, 155Eu, and 241Am sources, noise calibration, as well as optimal operating conditions including temperature, guard ring voltage, and bias voltage. By comparing these CdTe detectors to previous generations of detectors, in particular the Cadmium Zinc Telluride (CZT) detectors launched onboard NuSTAR in 2012, we hope to show that hybrid CdTe detectors are uniquely suited to high-resolution X-ray astronomy above the energy ranges of current comparable observatories.

  1. Method for improving the growth of cadmium telluride on a gallium arsenide substrate

    SciTech Connect

    Reno, J.L.

    1990-12-31

    A method for preparing a gallium arsenide substrate, prior to growing a layer of cadmium telluride on a support surface thereof. The preparation includes the steps of cleaning the gallium arsenide substrate and thereafter forming prepatterned shapes on the support surface of the gallium arsenide substrate. The layer of cadmium telluride then grown on the prepared substrate results in dislocation densities of approximately 1{times}10{sup 6}/cm{sup 2} or less. The prepatterned shapes on the support surface of the gallium arsenide substrate are formed by reactive ion etching an original outer surface of the gallium arsenide substrate and into the body of the gallium arsenide substrate to a depth of at least two microns. The prepatterned shapes have the appearance of cylindrical mesas each having a diameter of at lease twelve microns. After the mesas are formed on the support surface of the gallium arsenide substrate, the substrate is again cleaned.

  2. Epitaxial growth of cadmium telluride films on silicon with a buffer silicon carbide layer

    NASA Astrophysics Data System (ADS)

    Antipov, V. V.; Kukushkin, S. A.; Osipov, A. V.

    2017-02-01

    An epitaxial 1-3-μm-thick cadmium telluride film has been grown on silicon with a buffer silicon carbide layer using the method of open thermal evaporation and condensation in vacuum for the first time. The optimum substrate temperature was 500°C at an evaporator temperature of 580°C, and the growth time was 4 s. In order to provide more qualitative growth of cadmium telluride, a high-quality 100-nm-thick buffer silicon carbide layer was previously synthesized on the silicon surface using the method of topochemical substitution of atoms. The ellipsometric, Raman, X-ray diffraction, and electron-diffraction analyses showed a high structural perfection of the CdTe layer in the absence of a polycrystalline phase.

  3. Recycling of cadmium and selenium from photovoltaic modules and manufacturing wastes. A workshop report

    SciTech Connect

    Moskowitz, P.D.; Zweibel, K.

    1992-10-01

    Since the development of the first silicon based photovoltaic cell in the 1950`s, large advances have been made in photovoltaic material and processing options. At present there is growing interest in the commercial potential of cadmium telluride (CdTe) and copper indium diselenide (CIS) photovoltaic modules. As the commercial potential of these technologies becomes more apparent, interest in the environmental, health and safety issues associated with their production, use and disposal has also increased because of the continuing regulatory focus on cadmium and selenium. In future, recycling of spent or broken CdTe and CIS modules and manufacturing wastes may be needed for environmental, economic or political reasons. To assist industry to identify recycling options early in the commercialization process, a Workshop was convened. At this Workshop, representatives from the photovoltaic, electric utility, and nonferrous metals industries met to explore technical and institutional options for the recycling of spent CdTe and CIS modules and manufacturing wastes. This report summarizes the results of the Workshop. This report includes: (1) A discussion of the Resource Conservation and Recovery Act regulations and their potential implications to the photovoltaic industry; (2) an assessment of the needs of the photovoltaic industry from the perspective of module manufacturers and consumers; (3) an overview of recycling technologies now employed by other industries for similar types of materials; and, (4) a list of recommendation.

  4. Recycling of cadmium and selenium from photovoltaic modules and manufacturing wastes

    SciTech Connect

    Moskowitz, P.D.; Zweibel, K.

    1992-01-01

    Since the development of the first silicon based photovoltaic cell in the 1950's, large advances have been made in photovoltaic material and processing options. At present there is growing interest in the commercial potential of cadmium telluride (CdTe) and copper indium diselenide (CIS) photovoltaic modules. As the commercial potential of these technologies becomes more apparent, interest in the environmental, health and safety issues associated with their production, use and disposal has also increased because of the continuing regulatory focus on cadmium and selenium. In future, recycling of spent or broken CdTe and CIS modules and manufacturing wastes may be needed for environmental, economic or political reasons. To assist industry to identify recycling options early in the commercialization process, a Workshop was convened. At this Workshop, representatives from the photovoltaic, electric utility, and nonferrous metals industries met to explore technical and institutional options for the recycling of spent CdTe and CIS modules and manufacturing wastes. This report summarizes the results of the Workshop. This report includes: (1) A discussion of the Resource Conservation and Recovery Act regulations and their potential implications to the photovoltaic industry; (2) an assessment of the needs of the photovoltaic industry from the perspective of module manufacturers and consumers; (3) an overview of recycling technologies now employed by other industries for similar types of materials; and, (4) a list of recommendation.

  5. Structure and dynamics of cadmium telluride studied by x-ray and inelastic neutron scattering

    SciTech Connect

    Niedziela, Jennifer L; Stone, Matthew B

    2014-01-01

    We present a combined study of density functional theory, x-ray diffraction, and inelastic neutron scattering examining the temperature dependent structure and lattice dynamics of commercially available cadmium telluride. A subtle change in the structure is evinced near 80~K, which manifests also in the measured phonon density of states. There is no change to the long-range ordered structure. The implications of the change in relation to structural defects are discussed.

  6. Structure and dynamics of cadmium telluride studied by x-ray and inelastic neutron scattering

    SciTech Connect

    Niedziela, J. L.; Stone, M. B.

    2014-09-08

    We present a combined study of density functional theory, x-ray diffraction, and inelastic neutron scattering examining the temperature dependent structure and lattice dynamics of commercially available cadmium telluride. A subtle change in the structure is evinced near 80 K, which manifests also in the measured phonon density of states. There is no change to the long-range ordered structure. The implications of the change in relation to structural defects are discussed.

  7. Thin film cadmium telluride solar cells. Final technical report for period July 1, 1979-August 31, 1980

    SciTech Connect

    Chu, T.L.

    1980-08-01

    The objectives of this contract are to investigate thin films of cadmium telluride on low cost substrates and to determine the feasibility of using these films for high efficiency solar cells. Efforts during this program have been directed to the construction of apparatus for the chemical vapor deposition of cadmium telluride films, the selection and preparation of substrates, the deposition and characterization of cadmium telluride films, and the fabrication and characterization of solar cells. Cadmium telluride films have been deposited on a number of substrates by the direct combination of cadmium and tellurium on the substrate surface at 500/sup 0/C or higher at rates of up to 0.6 ..mu..m/min. The structural, crystallographic, and electrical properties of cadmium telluride films deposited over a wide range of conditions have been evaluated. A series of doping experiments have been carried out using iodine and indium as the n-type dopant, and phosphorus, arsenic, and antimony as the p-type dopant. Low resistivity films have not been produced thus far. In/W/graphite substrates have been used for the deposition of n-type films with an ohmic interface. However, no suitable substrates have been found to form an ohmic interface with p-type films. Solar cells prepared from these films exhibit relatively good short-circuit current density, up to 15 mA/cm/sup 2/, but their conversion efficiencies are severely limited by the high series resistance of the devices.

  8. The effect of different annealing temperatures on tin and cadmium telluride phases obtained by a modified chemical route

    SciTech Connect

    Mesquita, Anderson Fuzer; Porto, Arilza de Oliveira; Magela de Lima, Geraldo; Paniago, Roberto; Ardisson, José Domingos

    2012-11-15

    Graphical abstract: Display Omitted Highlights: ► Synthesis of cadmium and tin telluride. ► Chemical route to obtain pure crystalline cadmium and tin telluride. ► Effect of the annealing temperature on the crystalline phases. ► Removal of tin oxide as side product through thermal treatment. -- Abstract: In this work tin and cadmium telluride were prepared by a modification of a chemical route reported in the literature to obtain metallacycles formed by oxidative addition of tin-tellurium bonds to platinum (II). Through this procedure it was possible to obtain tin and cadmium telluride. X-ray diffraction and X-ray photoelectron spectroscopy were used to identify the crystalline phases obtained as well as the presence of side products. In the case of tin telluride it was identified potassium chloride, metallic tellurium and tin oxide as contaminants. The tin oxidation states were also monitored by {sup 119}Sn Mössbauer spectroscopy. The annealing in hydrogen atmosphere was chosen as a strategy to reduce the tin oxide and promote its reaction with the excess of tellurium present in the medium. The evolution of this tin oxide phase was studied through the annealing of the sample at different temperatures. Cadmium telluride was obtained with high degree of purity (98.5% relative weight fraction) according to the Rietveld refinement of X-ray diffraction data. The modified procedure showed to be very effective to obtain amorphous tin and cadmium telluride and the annealing at 450 °C has proven to be useful to reduce the amount of oxide produced as side product.

  9. Cadmium telluride solar cells: Record-breaking voltages

    DOE PAGES

    Poplawsky, Jonathan D.

    2016-01-01

    Here, the performance of CdTe solar cells — cheaper alternatives to silicon photovoltaics — is hampered by their low output voltages, which are normally well below the theoretical limit. Now, record voltages of over 1 V have been reported in single-crystal CdTe heterostructure solar cells, which are close to those of benchmark GaAs cells.

  10. Cadmium telluride solar cells: Record-breaking voltages

    SciTech Connect

    Poplawsky, Jonathan D.

    2016-01-01

    Here, the performance of CdTe solar cells — cheaper alternatives to silicon photovoltaics — is hampered by their low output voltages, which are normally well below the theoretical limit. Now, record voltages of over 1 V have been reported in single-crystal CdTe heterostructure solar cells, which are close to those of benchmark GaAs cells.

  11. Investigation of the electrophysical characteristics of SIS structures based on polycrystalline cadmium telluride

    NASA Astrophysics Data System (ADS)

    Mirsagatov, Sh. A.; Muzafarova, S. A.; Pak, V.

    Results are presented on the electrophysical characteristics of SIS structures based on polycrystalline cadmium telluride (structures used for solar cells). The volt-farad characteristics, the distribution of the concentration of surface states, impurity-distribution profiles in CdTe, and the dependence of the time of capture of electrons and holes by surface states on surface potential are examined for SnO2/pCdTe, ITO/pCdTe, and In2O3/pCdTe.

  12. Advanced methods for preparation and characterization of infrared detector materials. [mercury cadmium telluride alloys

    NASA Technical Reports Server (NTRS)

    Lehoczky, S. L.; Szofran, F. R.

    1981-01-01

    Differential thermal analysis data were obtained on mercury cadmium telluride alloys in order to establish the liquidus temperatures for the various alloy compositions. Preliminary theoretical analyses was performed to establish the ternary phase equilibrium parameters for the metal rich region of the phase diagram. Liquid-solid equilibrium parameters were determined for the pseudobinary alloy system. Phase equilibrium was calculated and Hg(l-x) Cd(x) Te alloys were directionally solidified from pseudobinary melts. Electrical resistivity and Hall coefficient measurements were obtained.

  13. Seeded Physical Vapor Transport of Cadmium-Zinc Telluride Crystals: Growth and Characterization

    NASA Technical Reports Server (NTRS)

    Palosz, W.; George, M. A.; Collins, E. E.; Chen, K.-T.; Zhang, Y.; Burger, A.

    1997-01-01

    Crystals of Cd(1-x)Zn(x)Te with x = 0.2 and 40 g in weight were grown on monocrystalline cadmium-zinc telluride seeds by closed-ampoule physical vapor transport with or without excess (Cd + Zn) in the vapor phase. Two post-growth cool-down rates were used. The crystals were characterized using low temperature photoluminescence, atomic force microscopy, chemical etching, X-ray diffraction and electrical measurements. No formation of a second, ZnTe-rich phase was observed.

  14. Specific features of the photoconductivity of semi-insulating cadmium telluride

    SciTech Connect

    Golubyatnikov, V. A.; Grigor’ev, F. I.; Lysenko, A. P. Strogankova, N. I.; Shadov, M. B.; Belov, A. G.

    2014-12-15

    The effect of local illumination providing a high level of free-carrier injection on the conductivity of a sample of semi-insulating cadmium telluride and on the properties of ohmic contacts to the sample is studied. It is found that, irrespective of the illumination region, the contact resistance of ohmic contacts decreases and the concentration of majority carriers in the sample grows in proportion to the illumination intensity. It is shown that inherent heterogeneities in crystals of semi-insulating semiconductors can be studied by scanning with a light probe.

  15. Cadmium Telluride Semiconductor Detector for Improved Spatial and Energy Resolution Radioisotopic Imaging.

    PubMed

    Abbaspour, Samira; Mahmoudian, Babak; Islamian, Jalil Pirayesh

    2017-01-01

    The detector in single-photon emission computed tomography has played a key role in the quality of the images. Over the past few decades, developments in semiconductor detector technology provided an appropriate substitution for scintillation detectors in terms of high sensitivity, better energy resolution, and also high spatial resolution. One of the considered detectors is cadmium telluride (CdTe). The purpose of this paper is to review the CdTe semiconductor detector used in preclinical studies, small organ and small animal imaging, also research in nuclear medicine and other medical imaging modalities by a complete inspect on the material characteristics, irradiation principles, applications, and epitaxial growth method.

  16. Cadmium Telluride Semiconductor Detector for Improved Spatial and Energy Resolution Radioisotopic Imaging

    PubMed Central

    Abbaspour, Samira; Mahmoudian, Babak; Islamian, Jalil Pirayesh

    2017-01-01

    The detector in single-photon emission computed tomography has played a key role in the quality of the images. Over the past few decades, developments in semiconductor detector technology provided an appropriate substitution for scintillation detectors in terms of high sensitivity, better energy resolution, and also high spatial resolution. One of the considered detectors is cadmium telluride (CdTe). The purpose of this paper is to review the CdTe semiconductor detector used in preclinical studies, small organ and small animal imaging, also research in nuclear medicine and other medical imaging modalities by a complete inspect on the material characteristics, irradiation principles, applications, and epitaxial growth method. PMID:28553175

  17. Operational Studies of Cadmium Zinc Telluride Microstrip Detectors using SVX ASIC Electronics

    NASA Astrophysics Data System (ADS)

    Krizmanic, John; Barbier, L. M.; Barthelmy, S.; Bartlett, L.; Birsa, F.; Gehrels, N.; Hanchak, C.; Kurczynski, P.; Odom, J.; Parsons, A.; Palmer, D.; Sheppard, D.; Snodgrass, S.; Stahle, C. M.; Teegarden, B.; Tueller, J.

    1997-04-01

    We have been investigating the operational properties of cadmium zinc telluride (CZT) microstrip detectors by using SVX ASIC readout electronics. This research is in conjunction with the development of a CZT-based, next generation gamma-ray telescope for use in the gamma-ray Burst ArcSecond Imaging and Spectroscopy (BASIS) experiment. CZT microstrip detectors with 128 channels and 100 micron strip pitch have been fabricated and were interfaced to SVX electronics at Goddard Space Flight Center. Experimental results involving position sensing, spectroscopy, and CZT operational properties will be presented.

  18. Anomalous segregation during electrodynamic gradient freeze growth of cadmium zinc telluride

    NASA Astrophysics Data System (ADS)

    Zhang, Nan; Yeckel, Andrew; Burger, Arnold; Cui, Yunlong; Lynn, Kelvin G.; Derby, Jeffrey J.

    2011-06-01

    A transient, coupled model has been developed to analyze the segregation of zinc in cadmium zinc telluride (CZT) grown in an electrodynamic gradient freeze (EDG) furnace. The coupled model consists of a local model that solves for time-dependent melt flow, heat transfer, melt-crystal interface position, and zinc distribution in both melt and solid phases and a quasi-steady-state global model that features realistic furnace heat transfer. After verification and validation tests, the model is applied to predict composition patterns in a large-scale CZT EDG growth system previously analyzed by Gasperino et al. [On crucible effects during the growth of cadmium zinc telluride in an electrodynamic gradient freeze furnace, J. Crys. Growth 311 (2009) 2327-2335]. Surprisingly, anomalous zinc segregation is predicted, featuring a non-monotonic axial concentration profile and several local minima and maxima across the boule. A mechanistic explanation is put forth based on the cumulative effect of changes in multi-cellular melt flow structures, a particularly susceptible occurrence for CZT systems. Additional effects of furnace translation rate and solid state diffusion are probed.

  19. Silver Indium Telluride Semiconductors and Their Solid Solutions with Cadmium Indium Telluride: Structure and Physical Properties.

    PubMed

    Welzmiller, Simon; Hennersdorf, Felix; Schlegel, Robert; Fitch, Andrew; Wagner, Gerald; Oeckler, Oliver

    2015-06-15

    Ag0.8In2.4Te4 (= AgIn3Te5) and Ag0.5In2.5Te4 (= AgIn5Te8) form solid solutions with CdIn2Te4, which are interesting as materials for photovoltaics or with respect to their thermoelectric properties. The corresponding crystal structures are related to the chalcopyrite type. Rietveld refinements of high-resolution synchrotron powder diffraction data measured at K-absorption edges of Cd, Ag, In, and Te and electron diffraction reveal the symmetry as well as the element and vacancy distribution in Ag0.8In2.4Te4 (= AgIn3Te5)/Ag0.5In2.5Te4 (= AgIn5Te8) mixed crystals such as Ag0.25Cd0.5In2.25Te4 and Ag0.2Cd0.75In2.1Te4. All compounds of the solid solution series (CdIn2Te4)x(Ag0.5In2.5Te4)1-x exhibit the HgCu2I4 structure type (space group I4̅2m) with completely ordered vacancies but disordered cations. The uniform cation distribution and thus the local charge balance are comparable to that of CdIn2Te4. In contrast, Ag0.8In2.4Te4 (= AgIn3Te5) crystallizes in the space group P4̅2c with disordered cations and partially ordered vacancies. This is corroborated by bond-valence sum calculations and the fact that there is a Vegard-like behavior for compounds with 0.5 < x in the pseudobinary system (CdIn2Te4)x(Ag0.8In2.4Te4)1-x. Owing to the different structures, there is no complete solid solution series between CdIn2Te4 and AgIn3Te5. All compounds in this work are n-type semiconductors with a low electrical conductivity (∼1 S/m) and rather high absolute Seebeck coefficients (up to -750 μV/mK; 225 °C). Electrical band gaps (Eg) determined from the Seebeck coefficients as well as (more reliably) from the electrical conductivity range between 0.19 and 1.13 eV.

  20. Synthesis of cadmium telluride quantum wires and the similarity of their band gaps to those of equidiameter cadmium telluride quantum dots

    SciTech Connect

    Wang, Lin-Wang; Sun, Jianwei; Wang, Lin-Wang; Buhro, William E.

    2008-07-11

    High-quality colloidal CdTe quantum wires having purposefully controlled diameters in the range of 5-11 nm are grown by the solution-liquid-solid (SLS) method, using Bi-nanoparticle catalysts, cadmium octadecylphosphonate and trioctylphosphine telluride as precursors, and a TOPO solvent. The wires adopt the wurtzite structure, and grow along the [002] direction (parallel to the c axis). The size dependence of the band gaps in the wires are determined from the absorption spectra, and compared to the experimental results for high-quality CdTe quantum dots. In contrast to the predictions of an effective-mass approximation, particle-in-a-box model, and previous experimental results from CdSe and InP dot-wire comparisons, the band gaps of CdTe dots and wires of like diameter are found to be experimentally indistinguishable. The present results are analyzed using density functional theory under the local-density approximation by implementing a charge-patching method. The higher-level theoretical analysis finds the general existence of a threshold diameter, above which dot and wire band gaps converge. The origin and magnitude of this threshold diameter is discussed.

  1. Synthesis of cadmium telluride quantum wires and the similarity of their effective band gaps to those of equidiameter cadmium telluride quantum dots.

    PubMed

    Sun, Jianwei; Wang, Lin-Wang; Buhro, William E

    2008-06-25

    High-quality colloidal CdTe quantum wires having purposefully controlled diameters in the range 5-11 nm are grown by the solution-liquid-solid (SLS) method, using Bi nanoparticle catalysts, cadmium octadecylphosphonate and trioctylphosphine telluride as precursors, and a TOPO solvent. The wires adopt the wurtzite structure and grow along the [002] direction (parallel to the c axis). The size dependence of the effective band gaps in the wires is determined from the absorption spectra and compared to the experimental results for high-quality CdTe quantum dots. In contrast to the predictions of an effective-mass approximation, particle-in-a-box model, and previous experimental results from CdSe and InP dot-wire comparisons, the effective band gaps of CdTe dots and wires of like diameter are found to be experimentally indistinguishable. The present results are analyzed using density functional theory under the local-density approximation by implementing a charge-patching method. The higher-level theoretical analysis finds the general existence of a threshold diameter, above which dot and wire effective band gaps converge. The origin and magnitude of this threshold diameter are discussed.

  2. Charge Sharing and Charge Loss in a Cadmium-Zinc-Telluride Fine-Pixel Detector Array

    NASA Technical Reports Server (NTRS)

    Gaskin, J. A.; Sharma, D. P.; Ramsey, B. D.; Six, N. Frank (Technical Monitor)

    2002-01-01

    Because of its high atomic number, room temperature operation, low noise, and high spatial resolution a Cadmium-Zinc-Telluride (CZT) multi-pixel detector is ideal for hard x-ray astrophysical observation. As part of on-going research at MSFC (Marshall Space Flight Center) to develop multi-pixel CdZnTe detectors for this purpose, we have measured charge sharing and charge loss for a 4x4 (750micron pitch), lmm thick pixel array and modeled these results using a Monte-Carlo simulation. This model was then used to predict the amount of charge sharing for a much finer pixel array (with a 300micron pitch). Future work will enable us to compare the simulated results for the finer array to measured values.

  3. Towards Optimization of ACRT Schedules Applied to the Gradient Freeze Growth of Cadmium Zinc Telluride

    DOE PAGES

    Divecha, Mia S.; Derby, Jeffrey J.

    2017-10-03

    Historically, the melt growth of II-VI crystals has benefitted by the application of the accelerated crucible rotation technique (ACRT). Here, we employ a comprehensive numerical model to assess the impact of two ACRT schedules designed for a cadmium zinc telluride growth system per the classical recommendations of Capper and co-workers. The “flow maximizing” ACRT schedule, with higher rotation, effectively mixes the solutal field in the melt but does not reduce supercooling adjacent to the growth interface. The ACRT schedule derived for stable Ekman flow, with lower rotation, proves more effective in reducing supercooling and promoting stable growth. Furthermore, these counterintuitivemore » results highlight the need for more comprehensive studies on the optimization of ACRT schedules for specific growth systems and for desired growth outcomes.« less

  4. Flexible cadmium telluride thin films grown on electron-beam-irradiated graphene/thin glass substrates

    SciTech Connect

    Seo, Won-Oh; Kim, Jihyun; Koo, Yong Hwan; Kim, Byungnam; Lee, Byung Cheol; Kim, Donghwan

    2014-08-25

    We demonstrate the close-spaced sublimation growth of polycrystalline cadmium telluride (CdTe) thin films on a flexible graphene electrode/thin glass substrate structure. Prior to the growth of CdTe films, chemical-vapor-deposited graphene was transferred onto a flexible glass substrate and subjected to electron-beam irradiation at an energy of 0.2 MeV in order to intentionally introduce the defects into it in a controlled manner. Micro-Raman spectroscopy and sheet resistance measurements were employed to monitor the damage and disorder in the electron-beam irradiated graphene layers. The morphology and optical properties of the CdTe thin films deposited on a graphene/flexible glass substrate were systematically characterized. The integration of the defective graphene layers with a flexible glass substrate can be a useful platform to grow various thin-film structures for flexible electronic and optoelectronic devices.

  5. Time resolved photo-luminescent decay characterization of mercury cadmium telluride focal plane arrays

    SciTech Connect

    Soehnel, Grant

    2015-01-20

    The minority carrier lifetime is a measurable material property that is an indication of infrared detector device performance. To study the utility of measuring the carrier lifetime, an experiment has been constructed that can time resolve the photo-luminescent decay of a detector or wafer sample housed inside a liquid nitrogen cooled Dewar. Motorized stages allow the measurement to be scanned over the sample surface, and spatial resolutions as low as 50µm have been demonstrated. A carrier recombination simulation was developed to analyze the experimental data. Results from measurements performed on 4 mercury cadmium telluride focal plane arrays show strong correlation between spatial maps of the lifetime, dark current, and relative response.

  6. Characterization of a 2-mm thick, 16x16 Cadmium-Zinc-Telluride Pixel Array

    NASA Technical Reports Server (NTRS)

    Gaskin, Jessica; Richardson, Georgia; Mitchell, Shannon; Ramsey, Brian; Seller, Paul; Sharma, Dharma

    2003-01-01

    The detector under study is a 2-mm-thick, 16x16 Cadmium-Zinc-Telluride pixel array with a pixel pitch of 300 microns and inter-pixel gap of 50 microns. This detector is a precursor to that which will be used at the focal plane of the High Energy Replicated Optics (HERO) telescope currently being developed at Marshall Space Flight Center. With a telescope focal length of 6 meters, the detector needs to have a spatial resolution of around 200 microns in order to take full advantage of the HERO angular resolution. We discuss to what degree charge sharing will degrade energy resolution but will improve our spatial resolution through position interpolation. In addition, we discuss electric field modeling for this specific detector geometry and the role this mapping will play in terms of charge sharing and charge loss in the detector.

  7. Time resolved photo-luminescent decay characterization of mercury cadmium telluride focal plane arrays

    DOE PAGES

    Soehnel, Grant

    2015-01-20

    The minority carrier lifetime is a measurable material property that is an indication of infrared detector device performance. To study the utility of measuring the carrier lifetime, an experiment has been constructed that can time resolve the photo-luminescent decay of a detector or wafer sample housed inside a liquid nitrogen cooled Dewar. Motorized stages allow the measurement to be scanned over the sample surface, and spatial resolutions as low as 50µm have been demonstrated. A carrier recombination simulation was developed to analyze the experimental data. Results from measurements performed on 4 mercury cadmium telluride focal plane arrays show strong correlationmore » between spatial maps of the lifetime, dark current, and relative response.« less

  8. Deposition of heteroepitaxial layer of cadmium selenide and telluride on indium arsenide

    SciTech Connect

    Buttaev, M.S.; Gasanov, N.G.; Gasanova, R.N.; Magomedov, K.A.

    1986-04-01

    The authors have investigated how the technological deposition regimes influence the surface morphology, growth rate, and structural perfection of heteroepitaxial layers of cadmium selenide and telluride grown on the polar faces of indium arsenide. Investigation of the process of obtaining layers of CdSe on InAs revealed that the orientation of the polar faces of the substrate influences both the morphology of the surface layer and the rate of growth. Photomicrographs are shown of the surfaces of layers with different growth figures. A phenomenum is explained that does not enable one to grow CdTe layers on InAs at high temperatures; this complicates the choice of particular parameters for the deposition process and rules out the use of indium arsenide as a substrate.

  9. Internal Electric Field Behavior of Cadmium Zinc Telluride Radiation Detectors Under High Carrier Injection

    SciTech Connect

    Yang, G.; Bolotnikov, A.E.; Camarda, G.S.; Cui, Y.; Hossain, A.; Kim, K.H.; Gul, R.; and James, R.B.

    2010-10-26

    The behavior of the internal electric-field of nuclear-radiation detectors substantially affects the detector's performance. We investigated the distribution of the internal field in cadmium zinc telluride (CZT) detectors under high carrier injection. We noted the build-up of a space charge region near the cathode that produces a built-in field opposing the applied field. Its presence entails the collapse of the electric field in the rest of detector, other than the portion near the cathode. Such a space-charge region originates from serious hole-trapping in CZT. The device's operating temperature greatly affects the width of the space-charge region. With increasing temperature from 5 C to 35 C, its width expanded from about 1/6 to 1/2 of the total depth of the detector.

  10. Characterization of a 2-mm thick, 16x16 Cadmium-Zinc-Telluride Pixel Array

    NASA Technical Reports Server (NTRS)

    Gaskin, Jessica; Richardson, Georgia; Mitchell, Shannon; Ramsey, Brian; Seller, Paul; Sharma, Dharma

    2003-01-01

    The detector under study is a 2-mm-thick, 16x16 Cadmium-Zinc-Telluride pixel array with a pixel pitch of 300 microns and inter-pixel gap of 50 microns. This detector is a precursor to that which will be used at the focal plane of the High Energy Replicated Optics (HERO) telescope currently being developed at Marshall Space Flight Center. With a telescope focal length of 6 meters, the detector needs to have a spatial resolution of around 200 microns in order to take full advantage of the HERO angular resolution. We discuss to what degree charge sharing will degrade energy resolution but will improve our spatial resolution through position interpolation. In addition, we discuss electric field modeling for this specific detector geometry and the role this mapping will play in terms of charge sharing and charge loss in the detector.

  11. Correlation Between Bulk Material Defects and Spectroscopic Response in Cadmium Zinc Telluride Detectors

    NASA Technical Reports Server (NTRS)

    Parker, Bradford H.; Stahle, C. M.; Barthelmy, S. D.; Parsons, A. M.; Tueller, J.; VanSant, J. T.; Munoz, B. F.; Snodgrass, S. J.; Mullinix, R. E.

    1999-01-01

    One of the critical challenges for large area cadmium zinc telluride (CdZnTe) detector arrays is obtaining material capable of uniform imaging and spectroscopic response. Two complementary nondestructive techniques for characterizing bulk CdZnTe have been developed to identify material with a uniform response. The first technique, infrared transmission imaging, allows for rapid visualization of bulk defects. The second technique, x-ray spectral mapping, provides a map of the material spectroscopic response when it is configured as a planar detector. The two techniques have been used to develop a correlation between bulk defect type and detector performance. The correlation allows for the use of infrared imaging to rapidly develop wafer mining maps. The mining of material free of detrimental defects has the potential to dramatically increase the yield and quality of large area CdZnTe detector arrays.

  12. Cd-rich and Te-rich low-temperature photoluminescence in cadmium telluride

    SciTech Connect

    Albin, D. S. Kuciauskas, D.; Ma, J.; Metzger, W. K.; Burst, J. M.; Moutinho, H. R.; Dippo, P. C.

    2014-03-03

    Low-temperature photoluminescence emission spectra were measured in cadmium telluride (CdTe) samples in which composition was varied to promote either Cd or Te-rich stoichiometry. The ability to monitor stoichiometry is important, since it has been shown to impact carrier recombination. Te-rich samples show transitions corresponding to acceptor-bound excitons (∼1.58 eV) and free-electron to acceptor transitions (∼1.547 eV). In addition to acceptor-bound excitons, Cd-rich samples show transitions assigned to donor-bound excitons (1.591 eV) and Te vacancies at 1.552 eV. Photoluminescence is a noninvasive way to monitor stoichiometric shifts induced by post-deposition anneals in polycrystalline CdTe thin films deposited by close-spaced sublimation.

  13. Imaging characteristics of zinc sulfide shell, cadmium telluride core quantum dots.

    PubMed

    Daneshvar, Hamid; Nelms, Jennifer; Muhammad, Osman; Jackson, Heather; Tkach, Jean; Davros, William; Peterson, Todd; Vogelbaum, Michael A; Bruchez, Marcel P; Toms, Steven A

    2008-02-01

    Quantum dots are optical nanocrystals whose in vitro and in vivo use in molecular imaging is expanding rapidly. In comparison with organic fluorophores, quantum dots exhibit desirable properties, such as multiwavelength fluorescence emission, excellent brightness and resistance to photobleaching. Their electron-dense, metallic cores suggest utility in other clinical imaging modalities. Core-shell zinc sulfide-cadmium telluride quantum dots were studied by magnetic resonance and computed tomography phantoms. Quantum dots were also injected into rat brain, as well as intravenously, using convection-enhanced delivery, prior to animal imaging. Computed tomography studies suggest that current formulations of quantum dots might be imaged in vivo in animals. Used in conjunction with optical imaging techniques, quantum dots have the potential to function as multimodal imaging platforms in vivo. The ability to detect an optical nanoparticle preoperatively with clinical imaging modality offers a distinct advantage to clinicians engaged in image-guided surgical applications.

  14. An optically-interrogated microwave-Poynting-vector sensor using cadmium manganese telluride.

    PubMed

    Chen, Chia-Chu; Whitaker, John F

    2010-06-07

    A single <110> cadmium-manganese-telluride crystal that exhibits both the Pockels and Faraday effects is used to produce a Poynting-vector sensor for signals in the microwave regime. This multi-birefringent crystal can independently measure either electric or magnetic fields through control of the polarization of the optical probe beam. After obtaining all the relevant electric and magnetic field components, a map of the Poynting vector along a 50-Omega microstrip was experimentally determined without the need for any further transformational calculations. The results demonstrate that this sensor can be used for near-field mapping of the Poynting vector. Utilizing both amplitude and phase information from the fields in the microwave signal, it was confirmed for the case of an open-terminated microstrip that no energy flowed to the load, while for a microstrip with a matched termination, the energy flowed consistently along the transmission line.

  15. Experiments and Monte Carlo modeling of a higher resolution Cadmium Zinc Telluride detector for safeguards applications

    NASA Astrophysics Data System (ADS)

    Borella, Alessandro

    2016-09-01

    The Belgian Nuclear Research Centre is engaged in R&D activity in the field of Non Destructive Analysis on nuclear materials, with focus on spent fuel characterization. A 500 mm3 Cadmium Zinc Telluride (CZT) with enhanced resolution was recently purchased. With a full width at half maximum of 1.3% at 662 keV, the detector is very promising in view of its use for applications such as determination of uranium enrichment and plutonium isotopic composition, as well as measurement on spent fuel. In this paper, I report about the work done with such a detector in terms of its characterization. The detector energy calibration, peak shape and efficiency were determined from experimental data. The data included measurements with calibrated sources, both in a bare and in a shielded environment. In addition, Monte Carlo calculations with the MCNPX code were carried out and benchmarked with experiments.

  16. Fluorescent cadmium telluride quantum dots embedded chitosan nanoparticles: a stable, biocompatible preparation for bio-imaging.

    PubMed

    Ghormade, Vandana; Gholap, Haribhau; Kale, Sonia; Kulkarni, Vaishnavi; Bhat, Suresh; Paknikar, Kishore

    2015-01-01

    Fluorescent cadmium telluride quantum dots (CdTe QDs) are an optically attractive option for bioimaging, but are known to display high cytotoxicity. Nanoparticles synthesized from chitosan, a natural biopolymer of β 1-4 linked glucosamine, display good biocompatibility and cellular uptake. A facile, green synthetic strategy has been developed to embed green fluorescent cadmium telluride quantum dots (CdTe QDs) in biocompatible CNPs to obtain a safer preparation than 'as is' QDs. High-resolution transmission electron microscopy showed the crystal lattice corresponding to CdTe QDs embedded in CNPs while thermogravimetry confirmed their polymeric composition. Electrostatic interactions between thiol-capped QDs (4 nm, -57 mV) and CNPs (~300 nm, +38 mV) generated CdTe QDs-embedded CNPs that were stable up to three months. Further, viability of NIH3T3 mouse fibroblast cells in vitro increased in presence of QDs-embedded CNPs as compared to bare QDs. At the highest concentration (10 μg/ml), the former shows 34 and 39% increase in viability at 24 and 48 h, respectively, as compared to the latter. This shows that chitosan nanoparticles do not release the QDs up to 48 h and do not cause extended toxicity. Furthermore, hydrolytic enzymes such as lysozyme and chitinase did not degrade chitosan nanoparticles. Moreover, QDs-embedded CNPs show enhanced internalization in NIH3T3 cells as compared to bare QDs. This method offers ease of synthesis and handling of stable, luminescent, biocompatible CdTe QDs-embedded CNPs with a favorable toxicity profile and better cellular uptake with potential for bioimaging and targeted detection of cellular components.

  17. Novel aspects of application of cadmium telluride quantum dots nanostructures in radiation oncology

    NASA Astrophysics Data System (ADS)

    Fazaeli, Yousef; Zare, Hakimeh; Karimi, Shokufeh; Rahighi, Reza; Feizi, Shahzad

    2017-08-01

    In the last two decades, quantum dots nanomaterials have garnered a great deal of scientific interest because of their unique properties. Quantum dots (QDs) are inorganic fluorescent nanocrystals in the size range between 1 and 20 nm. Due to their structural properties, they possess distinctive properties and behave in different way from crystals in macro scale, in many branches of human life. Cadmium telluride quantum dots (CdTe QDs) were labeled with 68Ga radio nuclide for fast in vivo targeting and coincidence imaging of tumors. Using instant paper chromatography, the physicochemical properties of the Cadmium telluride quantum dots labeled with 68Ga NPs (68Ga@ CdTe QDs) were found high enough stable in organic phases, e.g., a human serum, to be reliably used in bioapplications. In vivo biodistribution of the 68Ga@ CdTe QDs nanoconposite was investigated in rats bearing fibro sarcoma tumor after various post-injection periods of time. The 68Ga NPs exhibited a rapid as well as high tumor uptake in a very short period of time (less than 10 min), resulting in an efficient tumor targeting/imaging agent. Meantime, the low lipophilicity of the 68Ga NPs caused to their fast excretion throughout the body by kidneys (as also confirmed by the urinary tract). Because of the short half-life of 68Ga radionuclide, the 68Ga@ CdTe QDs with an excellent tumor targeting/imaging and fast washing out from the body can be suggested as one of the most effective and promising nanomaterials in nanotechnology-based cancer diagnosis and therapy.

  18. a Photoemission Study of the Electronic Structure and Oxidation Properties of Mercury-Cadmium Telluride.

    NASA Astrophysics Data System (ADS)

    Silberman, Joel Abraham

    The study of electronic structure and oxidation properties of the random substitutional alloy Mercury Cadmium Telluride is of general interest in relating the electronic structure and surface properties of a semiconductor alloy with a strongly aperiodic potential to these aspects of the binary compounds that represent the composition extremes. It is also of practical value, as study of the electronic structure and oxidation properties provides an underpinning of fundamental knowledge for further technological development. Angle-integrated and polarization dependent angle -resolved photoemission spectroscopy (along the normal) from the (110) cleavage face of the alloy and the binaries Cadmium Telluride and Mercury Telluride were performed to examine the composition dependence of the electronic structure and bonding. Emission from the valence states documents the breakdown of the virtual crystal approximation and the success of the coherent potential approximation in treating the alloy potential. The consequences of this finding for the bonding and materials properties are described. Detailed dispersion relations as a function of composition have been deduced from the angle-resolved data for a portion of the band structure along (110) and are compared to theory. To augment the discussion of the photoemission final states and the polarization dependence of the data, a nonlocal pseudopotential calculation extending to 30 eV above the valence band maximum was executed. In the oxidation studies, core level photoemission spectroscopy was used to characterize the clean surface and monitor the growth of native oxide films a few monolayers thick formed on the semi- conductor at room temperature by exposure to oxygen in the gas phase activated by contact with a hot filament. The cleaved (110) surface of p-type solid state recrystallized alloy samples was found to be stoichiometric, stable against Hg loss over time in vacuum at room temperature, but converted to n

  19. Mitochondrial Toxicity of Cadmium Telluride Quantum Dot Nanoparticles in Mammalian Hepatocytes

    PubMed Central

    Nguyen, Kathy C.; Rippstein, Peter; Tayabali, Azam F.; Willmore, William G.

    2015-01-01

    There are an increasing number of studies indicating that mitochondria are relevant targets in nanomaterial-induced toxicity. However, the underlying mechanisms by which nanoparticles (NPs) interact with these organelles and affect their functions are unknown. The aim of this study was to investigate the effects of cadmium telluride quantum dot (CdTe-QD) NPs on mitochondria in human hepatocellular carcinoma HepG2 cells. CdTe-QD treatment resulted in the enlargement of mitochondria as examined with transmission electron microscopy and confocal microscopy. CdTe-QDs appeared to associate with the isolated mitochondria as detected by their inherent fluorescence. Further analyses revealed that CdTe-QD caused disruption of mitochondrial membrane potential, increased intracellular calcium levels, impaired cellular respiration, and decreased adenosine triphosphate synthesis. The effects of CdTe-QDs on mitochondrial oxidative phosphorylation were evidenced by changes in levels and activities of the enzymes of the electron transport chain. Elevation of peroxisome proliferator-activated receptor-γ coactivator levels after CdTe-QD treatment suggested the effects of CdTe-QDs on mitochondrial biogenesis. Our results also showed that the effects of CdTe-QDs were similar or greater to those of cadmium chloride at equivalent concentrations of cadmium, suggesting that the toxic effects of CdTe-QDs were not solely due to cadmium released from the NPs. Overall, the study demonstrated that CdTe-QDs induced multifarious toxicity by causing changes in mitochondrial morphology and structure, as well as impairing their function and stimulating their biogenesis. PMID:25809595

  20. Infrared microspectroscopic imaging of biomineralized tissues using a mercury-cadmium-telluride focal-plane array detector.

    PubMed

    Marcott, C; Reeder, R C; Paschalis, E P; Tatakis, D N; Boskey, A L; Mendelsohn, R

    1998-02-01

    A 64 x 64 mercury-cadmium-telluride focal-plane array detector attached to a Fourier transform infrared microscope was used to spectroscopically image 5 microm sections of canine alveolar bone tissue in the fingerprint region of the infrared spectrum. By ratioing the relative intensities of specific bands across the images, it is possible to obtain spatial distributions of the mineral-to-matrix ratio and mineral maturity as a function of distance from an osteon.

  1. Study of a high-resolution, 3-D positioning cadmium zinc telluride detector for PET

    PubMed Central

    Gu, Y; Matteson, J L; Skelton, R T; Deal, A C; Stephan, E A; Duttweiler, F; Gasaway, T M; Levin, C S

    2011-01-01

    This paper investigates the performance of 1 mm resolution Cadmium Zinc Telluride (CZT) detectors for positron emission tomography (PET) capable of positioning the 3-D coordinates of individual 511 keV photon interactions. The detectors comprise 40 mm × 40 mm × 5 mm monolithic CZT crystals that employ a novel cross-strip readout with interspersed steering electrodes to obtain high spatial and energy resolution. The study found a single anode FWHM energy resolution of 3.06±0.39% at 511 keV throughout most the detector volume. Improved resolution is expected with properly shielded front-end electronics. Measurements made using a collimated beam established the efficacy of the steering electrodes in facilitating enhanced charge collection across anodes, as well as a spatial resolution of 0.44±0.07 mm in the direction orthogonal to the electrode planes. Finally, measurements based on coincidence electronic collimation yielded a point spread function with 0.78±0.10 mm FWHM, demonstrating 1 mm spatial resolution capability transverse to the anodes – as expected from the 1 mm anode pitch. These findings indicate that the CZT-based detector concept has excellent performance and shows great promise for a high-resolution PET system. PMID:21335649

  2. Reproductive toxicity and gender differences induced by cadmium telluride quantum dots in an invertebrate model organism

    PubMed Central

    Yan, Si-Qi; Xing, Rui; Zhou, Yan-Feng; Li, Kai-Le; Su, Yuan-Yuan; Qiu, Jian-Feng; Zhang, Yun-Hu; Zhang, Ke-Qin; He, Yao; Lu, Xiao-Ping; Xu, Shi-Qing

    2016-01-01

    Sexual glands are key sites affected by nanotoxicity, but there is no sensitive assay for measuring reproductive toxicity in animals. The aim of this study was to investigate the toxic effects of cadmium telluride quantum dots (CdTe-QDs) on gonads in a model organism, Bombyx mori. After dorsal vein injection of 0.32 nmol of CdTe-QDs per individual, the QDs passed through the outer membranes of gonads via the generation of ROS in the membranes of spermatocysts and ovarioles, as well as internal germ cells, thereby inducing early germ cell death or malformations via complex mechanisms related to apoptosis and autophagy through mitochondrial and lysosomal pathways. Histological observations of the gonads and quantitative analyses of germ cell development showed that the reproductive toxicity was characterized by obvious male sensitivity. Exposure to QDs in the early stage of males had severe adverse effects on the quantity and quality of sperm, which was the main reason for the occurrence of unfertilized eggs. Ala- or Gly-conjugated QDs could reduce the nanotoxicity of CdTe-QDs during germ cell development and fertilization of their offspring. The results demonstrate that males are preferable models for evaluating the reproductive toxicity of QDs in combined in vivo/in vitro investigations. PMID:27669995

  3. Reproductive toxicity and gender differences induced by cadmium telluride quantum dots in an invertebrate model organism

    NASA Astrophysics Data System (ADS)

    Yan, Si-Qi; Xing, Rui; Zhou, Yan-Feng; Li, Kai-Le; Su, Yuan-Yuan; Qiu, Jian-Feng; Zhang, Yun-Hu; Zhang, Ke-Qin; He, Yao; Lu, Xiao-Ping; Xu, Shi-Qing

    2016-09-01

    Sexual glands are key sites affected by nanotoxicity, but there is no sensitive assay for measuring reproductive toxicity in animals. The aim of this study was to investigate the toxic effects of cadmium telluride quantum dots (CdTe-QDs) on gonads in a model organism, Bombyx mori. After dorsal vein injection of 0.32 nmol of CdTe-QDs per individual, the QDs passed through the outer membranes of gonads via the generation of ROS in the membranes of spermatocysts and ovarioles, as well as internal germ cells, thereby inducing early germ cell death or malformations via complex mechanisms related to apoptosis and autophagy through mitochondrial and lysosomal pathways. Histological observations of the gonads and quantitative analyses of germ cell development showed that the reproductive toxicity was characterized by obvious male sensitivity. Exposure to QDs in the early stage of males had severe adverse effects on the quantity and quality of sperm, which was the main reason for the occurrence of unfertilized eggs. Ala- or Gly-conjugated QDs could reduce the nanotoxicity of CdTe-QDs during germ cell development and fertilization of their offspring. The results demonstrate that males are preferable models for evaluating the reproductive toxicity of QDs in combined in vivo/in vitro investigations.

  4. A novel approach of chemical mechanical polishing for cadmium zinc telluride wafers

    PubMed Central

    Zhang, Zhenyu; Wang, Bo; Zhou, Ping; Kang, Renke; Zhang, Bi; Guo, Dongming

    2016-01-01

    A novel approach of chemical mechanical polishing (CMP) is developed for cadmium zinc telluride (CdZnTe or CZT) wafers. The approach uses environment-friendly slurry that consists of mainly silica, hydrogen peroxide, and citric acid. This is different from the previously reported slurries that are usually composed of strong acid, alkali, and bromine methanol, and are detrimental to the environment and operators. Surface roughness 0.5 nm and 4.7 nm are achieved for Ra and peak-to-valley (PV) values respectively in a measurement area of 70 × 50 μm2, using the developed novel approach. Fundamental polishing mechanisms are also investigated in terms of X-ray photoelectron spectroscopy (XPS) and electrochemical measurements. Hydrogen peroxide dominates the passivating process during the CMP of CZT wafers, indicating by the lowest passivation current density among silica, citric acid and hydrogen peroxide solution. Chemical reaction equations are proposed during CMP according to the XPS and electrochemical measurements. PMID:27225310

  5. Novel Cadmium Zinc Telluride Devices for Myocardial Perfusion Imaging-Technological Aspects and Clinical Applications.

    PubMed

    Ben-Haim, Simona; Kennedy, John; Keidar, Zohar

    2016-07-01

    Myocardial perfusion imaging plays an important role in the assessment of patients with known or suspected coronary artery disease and is well established for diagnosis and for prognostic evaluation in these patients. The dedicated cardiac SPECT cameras with solid-state cadmium zinc telluride (CZT) detectors were first introduced a decade ago. A large body of evidence is building up, showing the superiority of the new technology compared with conventional gamma cameras. Not only the CZT detectors, but also new collimator geometries, the ability to perform focused imaging optimized for the heart and advances in data processing algorithms all contribute to the significantly improved sensitivity up to 8-10 times, as well as improved energy resolution and improved reconstructed spatial resolution compared with conventional technology. In this article, we provide an overview of the physical characteristics of the CZT cameras, as well as a review of the literature published so far, including validation studies in comparison with conventional myocardial perfusion imaging and with invasive coronary angiography, significant reduction in radiation dose, and new imaging protocols enabled by the new technology.

  6. Directional Solidification of Mercury Cadmium Telluride During the Second United States Microgravity Payload Mission (USMP-2)

    NASA Technical Reports Server (NTRS)

    Gillies, D. C.; Lehoczky, S. L.; Szofran, F. R.; Watring, D. A.; Alexander, H. A.; Jerman, G. A.

    1996-01-01

    As a solid solution semiconductor having, a large separation between liquidus and solidus, mercury cadmium telluride (MCT) presents a formidable challenge to crystal growers desiring an alloy of high compositional uniformity. To avoid constitutional supercooling during Bridgman crystal growth it is necessary to solidify slowly in a high temperature gradient region. The necessary translation rate of less than 1 mm/hr results in a situation where fluid flow induced by gravity on earth is a significant factor in material transport. The Advanced Automated Directional Solidification Furnace (AADSF) is equipped to provide the stable thermal environment with a high gradient, and the required slow translation rate needed. Ground based experiments in AADSF show clearly the dominance of flow driven transport. The first flight of AADSF in low gravity on USMP-2 provided an opportunity to test theories of fluid flow in MCT and showed several solidification regimes which are very different from those observed on earth. Residual acceleration vectors in the orbiter during the mission were measured by the Orbital Acceleration Research Experiment (OARE), and correlated well with observed compositional differences in the samples.

  7. Spectral x-ray computed tomography scanner using a cadmium telluride detector

    NASA Astrophysics Data System (ADS)

    Sato, Eiichi; Oda, Yasuyuki; Yamaguchi, Satoshi; Hagiwara, Osahiko; Matsukiyo, Hiroshi; Watanabe, Manabu; Kusachi, Shinya

    2016-10-01

    To obtain four tomograms with four different photon energy ranges simultaneously, we have developed a quad-energy Xray photon counter with a cadmium telluride (CdTe) detector and four sets of comparators and frequency-voltage converters (FVCs). X-ray photons are detected using the CdTe detector, and the event pulses from a shaping amplifier are sent to four comparators simultaneously to regulate four threshold energies of 20, 35, 50 and 65 keV. Using this counter, the energy ranges are 20-100, 35-100, 50-100 and 65-100 keV; the maximum energy corresponds to the tube voltage. Xray photons in the four ranges are counted using the comparators, and the logical pulses from the comparators are input to the FVCs. The outputs from the four FVCs are input to a personal computer through an analog-digital converter (ADC) to carry out quad-energy imaging. To observe contrast variations with changes in the threshold energy, we performed spectral computed tomography utilizing the quad-energy photon counter at a tube voltage of 100 kV and a current of 8.0 μA. In the spectral CT, four tomograms were obtained simultaneously with four energy ranges. The image contrast varied with changes in the threshold energy, and the exposure time for tomography was 9.8 min.

  8. A novel approach of chemical mechanical polishing for cadmium zinc telluride wafers

    NASA Astrophysics Data System (ADS)

    Zhang, Zhenyu; Wang, Bo; Zhou, Ping; Kang, Renke; Zhang, Bi; Guo, Dongming

    2016-05-01

    A novel approach of chemical mechanical polishing (CMP) is developed for cadmium zinc telluride (CdZnTe or CZT) wafers. The approach uses environment-friendly slurry that consists of mainly silica, hydrogen peroxide, and citric acid. This is different from the previously reported slurries that are usually composed of strong acid, alkali, and bromine methanol, and are detrimental to the environment and operators. Surface roughness 0.5 nm and 4.7 nm are achieved for Ra and peak-to-valley (PV) values respectively in a measurement area of 70 × 50 μm2, using the developed novel approach. Fundamental polishing mechanisms are also investigated in terms of X-ray photoelectron spectroscopy (XPS) and electrochemical measurements. Hydrogen peroxide dominates the passivating process during the CMP of CZT wafers, indicating by the lowest passivation current density among silica, citric acid and hydrogen peroxide solution. Chemical reaction equations are proposed during CMP according to the XPS and electrochemical measurements.

  9. Use of Rutherford backscattering and optical spectroscopy to study boron implantation in cadmium telluride. Technical report

    SciTech Connect

    Jamieson, D.N.; Bowman, R.C.; Adams, P.M.; Knudsen, J.F.; Downing, R.G.

    1988-10-03

    The effect of large-dose boron implantation in single-crystal cadmium telluride (CdTe) was investigated by Rutherford backscattering spectrometry (RBS), with channeling double-crystal x-ray diffraction (DCD), and photoreflectance (PR) spectroscopy. Comparisons are made with the results of identical B implantations of silicon and gallium arsenides crystals. Multiple energy implantations were performed at room temperature and liquid nitrogen temperature with total doses up to 1.5 x 10 W B ions/sq. cm. The implanted B distribution was measured with neutron depth profiling (NDP) and found to agree well with Monte Carlo ion-range calculations. The RBS results showed that the CdTe crystals had not been rendered completely amorphous even for the highest-dose implantation unlike GaAs and Si. Furthermore, the DCD results showed little implantation-induced structure in the rocking curves from the implanted CdTe crystals, in contrast to GaAs. The consequences of annealing at 500 C in an attempt to regrow the crystal structure are also discussed.

  10. Temperature dependent van der Pauw-Hall measurements on sodium doped single crystalline cadmium telluride

    NASA Astrophysics Data System (ADS)

    Ahmad, Faisal R.

    2015-03-01

    In this report, results of the temperature dependent electrical conductivity measurements conducted on single crystalline cadmium telluride (CdTe), containing sodium (Na) impurities are presented and discussed. The electrical conductivity measurements were conducted using an apparatus that allowed the implementation of a standard van der Pauw-Hall effect technique through which the electrical resistivity, concentration of majority carriers, as well as the carrier mobility were determined for temperatures ranging between 24 K and 350 K. Over this temperature range, the electrical resistivity was observed to change by 7 orders of magnitude. Hall measurements showed that the hole concentration at 300 K was ˜3 × 1015 cm-3 and the hole mobility at the same temperature was ˜80 cm2/V s. Measuring the concentration of holes as a function of the sample temperature enabled the estimation of the acceptor energy level with respect to the valence band maximum to be ˜60 meV. The same data also revealed the potential presence of a compensating donor level. Furthermore, the hole mobility was also analyzed over the entire temperature range and the data revealed that above 100 K, the carrier mobility was dominated by the scattering of holes from lattice vibrations.

  11. Improved performance of silicon nanowire/cadmium telluride quantum dots/organic hybrid solar cells

    NASA Astrophysics Data System (ADS)

    Ge, Zhaoyun; Xu, Ling; Zhang, Renqi; Xue, Zhaoguo; Wang, Hongyu; Xu, Jun; Yu, Yao; Su, Weining; Ma, Zhongyuan; Chen, Kunji

    2015-04-01

    We fabricated silicon nanowire/cadmium telluride quantum dots (CdTe QDs)/organic hybrid solar cells and investigated their structure and electrical properties. Transmission electron microscope revealed that CdTe QDs were uniformly distributed on the surface of the silicon nanowires, which made PEDOT:PSS easily filled the space between SiNWs. The current density-voltage (J-V) characteristics of hybrid solar cells were investigated both in dark and under illumination. The result shows that the performance of the hybrid solar cells with CdTe QDs layer has an obvious improvement. The optimal short-circuit current density (Jsc) of solar cells with CdTe QDs layer can reach 33.5 mA/cm2. Compared with the solar cells without CdTe QDs, Jsc has an increase of 15.1%. Power conversion efficiency of solar cells also increases by 28.8%. The enhanced performance of the hybrid solar cells with CdTe QDs layers are ascribed to down-shifting effect of CdTe QDs and the modification of the silicon nanowires surface with CdTe QDs. The result of our experiments suggests that hybrid solar cells with CdTe QDs modified are promising candidates for solar cell application.

  12. Characterization of Pixelated Cadmium-Zinc-Telluride Detectors for Astrophysical Applications

    NASA Technical Reports Server (NTRS)

    Gaskin, Jessica; Sharma, Dharma; Ramsey, Brian; Seller, Paul

    2003-01-01

    Comparisons of charge sharing and charge loss measurements between two pixelated Cadmium-Zinc-Telluride (CdZnTe) detectors are discussed. These properties along with the detector geometry help to define the limiting energy resolution and spatial resolution of the detector in question. The first detector consists of a 1-mm-thick piece of CdZnTe sputtered with a 4x4 array of pixels with pixel pitch of 750 microns (inter-pixel gap is 100 microns). Signal readout is via discrete ultra-low-noise preamplifiers, one for each of the 16 pixels. The second detector consists of a 2-mm-thick piece of CdZnTe sputtered with a 16x16 array of pixels with a pixel pitch of 300 microns (inter-pixel gap is 50 microns). This crystal is bonded to a custom-built readout chip (ASIC) providing all front-end electronics to each of the 256 independent pixels. These detectors act as precursors to that which will be used at the focal plane of the High Energy Replicated Optics (HERO) telescope currently being developed at Marshall Space Flight Center. With a telescope focal length of 6 meters, the detector needs to have a spatial resolution of around 200 microns in order to take full advantage of the HERO angular resolution. We discuss to what degree charge sharing will degrade energy resolution but will improve our spatial resolution through position interpolation.

  13. Inhibition of autophagy contributes to the toxicity of cadmium telluride quantum dots in Saccharomyces cerevisiae

    PubMed Central

    Fan, Junpeng; Shao, Ming; Lai, Lu; Liu, Yi; Xie, Zhixiong

    2016-01-01

    Cadmium telluride quantum dots (CdTe QDs) are used as near-infrared probes in biologic and medical applications, but their cytological effects and mechanism of potential toxicity are still unclear. In this study, we evaluated the toxicity of CdTe QDs of different sizes and investigated their mechanism of toxicity in the yeast Saccharomyces cerevisiae. A growth inhibition assay revealed that orange-emitting CdTe (O-CdTe) QDs (half inhibitory concentration [IC50] =59.44±12.02 nmol/L) were more toxic than green-emitting CdTe QDs (IC50 =186.61±19.74 nmol/L) to S. cerevisiae. Further studies on toxicity mechanisms using a transmission electron microscope and green fluorescent protein tagged Atg8 processing assay revealed that O-CdTe QDs could partially inhibit autophagy at a late stage, which differs from the results reported in mammalian cells. Moreover, autophagy inhibited at a late stage by O-CdTe QDs could be partially recovered by enhancing autophagy with rapamycin (an autophagy activator), combined with an increased number of living cells. These results indicate that inhibition of autophagy acts as a toxicity mechanism of CdTe QDs in S. cerevisiae. This work reports a novel toxicity mechanism of CdTe QDs in yeast and provides valuable information on the effect of CdTe QDs on the processes of living cells. PMID:27524895

  14. Investigation of the Electronic Properties of Cadmium Zinc Telluride (CZT) Detectors using a Nuclear Microprobe

    SciTech Connect

    BRUNETT,BRUCE A.; DOYLE,BARNEY L.; JAMES,RALPH B.; VIZKELETHY,GYORGY; WALSH,DAVID S.

    1999-10-18

    The electronic transport properties of Cadmium Zinc Telluride (CZT) determine the charge collection efficiency (i.e. the signal quality) of CZT detectors. These properties vary on both macroscopic and microscopic scale and depend on the presence of impurities and defects introduced during the crystal growth. Ion Beam Induced Charge Collection (IBICC) is a proven method to measure the charge collection efficiency. Using an ion microbeam, the charge collection efficiency can be mapped with submicron resolution, and the map of electronic properties (such as drift length) can be calculated from the measurement. A more sophisticated version of IBICC, the Time Resolved IBICC (TRIBICC) allows them to determine the mobility and the life time of the charge carriers by recording and analyzing the transient waveform of the detector signal. Furthermore, lateral IBICC and TRIBICC can provide information how the charge collection efficiency depends on the depth where the charge carriers are generated. This allows one to deduce information on the distribution of the electric field and transport properties of the charge carriers along the detector axis. IBICC and TRIBICC were used at the Sandia microbeam facility to image electronic properties of several CZT detectors. From the lateral TRIBICC measurement the electron and hole drift length profiles were calculated.

  15. Characterization of Pixelated Cadmium-Zinc-Telluride Detectors for Astrophysical Applications

    NASA Technical Reports Server (NTRS)

    Gaskin, Jessica; Sharma, Dharma; Ramsey, Brian; Seller, Paul

    2003-01-01

    Comparisons of charge sharing and charge loss measurements between two pixelated Cadmium-Zinc-Telluride (CdZnTe) detectors are discussed. These properties along with the detector geometry help to define the limiting energy resolution and spatial resolution of the detector in question. The first detector consists of a 1-mm-thick piece of CdZnTe sputtered with a 4x4 array of pixels with pixel pitch of 750 microns (inter-pixel gap is 100 microns). Signal readout is via discrete ultra-low-noise preamplifiers, one for each of the 16 pixels. The second detector consists of a 2-mm-thick piece of CdZnTe sputtered with a 16x16 array of pixels with a pixel pitch of 300 microns (inter-pixel gap is 50 microns). This crystal is bonded to a custom-built readout chip (ASIC) providing all front-end electronics to each of the 256 independent pixels. These detectors act as precursors to that which will be used at the focal plane of the High Energy Replicated Optics (HERO) telescope currently being developed at Marshall Space Flight Center. With a telescope focal length of 6 meters, the detector needs to have a spatial resolution of around 200 microns in order to take full advantage of the HERO angular resolution. We discuss to what degree charge sharing will degrade energy resolution but will improve our spatial resolution through position interpolation.

  16. Optimal thallium-201 dose in cadmium-zinc-telluride SPECT myocardial perfusion imaging.

    PubMed

    Ishihara, Masaru; Taniguchi, Yasuyo; Onoguchi, Masahisa; Shibutani, Takayuki

    2016-12-22

    We aimed to determine the optimal thallium 201 chloride (thallium-201) dose using a novel ultrafast cardiac gamma camera with cadmium-zinc-telluride (CZT) solid-state semiconductor detectors (D-SPECT). The optimal thallium-201 dose for obtaining left ventricular (LV) myocardial counts was determined from a phantom study. Consecutive 292 patients underwent stress myocardial perfusion imaging with a thallium-201 injection. Stress test comprised exercise or pharmacological (adenosine) provocation. We calculated an optimal thallium-201 dose that resulted in better LV myocardial counts during 6 minutes of acquisition time. We corrected the respective values according to the patient's age, sex, body mass index (BMI), and type of stress test. The lowest thallium-201 dose for obtaining acceptable imaging was 1.2 million counts. Radiopharmaceutical doses showed a positive correlation with the patient's age (P < .001), sex (P = .012), BMI (P < .001), and type of stress test (P < .001). Multivariate analysis revealed that the patient's BMI and the type of stress test were statistically significant factors for determining the correct radiopharmaceutical dose (P < .001 for both). For clinical use of the CZT SPECT system, the optimal individual thallium-201 doses can be determined based on the patient's BMI and type of stress test.

  17. Energy-discriminating X-ray computed tomography system utilizing a cadmium telluride detector

    NASA Astrophysics Data System (ADS)

    Sato, Eiichi; Abderyim, Purkhet; Enomoto, Toshiyuki; Watanabe, Manabu; Hitomi, Keitaro; Takahasi, Kiyomi; Sato, Shigehiro; Ogawae, Akira; Onagawa, Jun

    2010-07-01

    An energy-discriminating K-edge X-ray computed tomography (CT) system is useful for increasing contrast resolution of a target region utilizing contrast media and for reducing the absorbed dose for patients. The CT system is of the first-generation type with a cadmium telluride (CdTe) detector, and a projection curve is obtained by translation scanning using the CdTe detector in conjunction with an x-stage. An object is rotated by the rotation step angle using a turntable between the translation scans. Thus, CT is carried out by repeating the translation scanning and the rotation of an object. Penetrating X-ray photons from the object are detected by the CdTe detector, and event signals of X-ray photons are produced using charge-sensitive and shaping amplifiers. Both the photon energy and the energy width are selected by use of a multi-channel analyzer, and the number of photons is counted by a counter card. Demonstration of enhanced iodine K-edge X-ray CT was carried out by selecting photons with energies just beyond the iodine K-edge energy of 33.2 keV.

  18. Simulation study comparing high-purity germanium and cadmium zinc telluride detectors for breast imaging

    PubMed Central

    Campbell, DL; Peterson, TE

    2014-01-01

    We conducted simulations to compare the potential imaging performance for breast cancer detection with High-Purity Germanium (HPGe) and Cadmium Zinc Telluride (CZT) systems with 1% and 3.8% energy resolution at 140 keV, respectively. Using the Monte Carlo N-Particle (MCNP5) simulation package, we modelled both 5 mm-thick CZT and 10 mm-thick HPGe detectors with the same parallel-hole collimator for the imaging of a breast/torso phantom. Simulated energy spectra were generated, and planar images were created for various energy windows around the 140-keV photopeak. Relative sensitivity and scatter and the torso fractions were calculated along with tumour contrast and signal-to-noise ratios (SNR). Simulations showed that utilizing a ±1.25% energy window with an HPGe system better suppressed torso background and small-angle scattered photons than a comparable CZT system using a −5%/+10% energy window. Both systems provided statistically similar contrast and SNR, with HPGe providing higher relative sensitivity. Lowering the counts of HPGe images to match CZT count density still yielded equivalent contrast between HPGe and CZT. Thus, an HPGe system may provide equivalent breast imaging capability at lower injected radioactivity levels when acquiring for equal imaging time. PMID:25360792

  19. Simulation study comparing high-purity germanium and cadmium zinc telluride detectors for breast imaging.

    PubMed

    Campbell, D L; Peterson, T E

    2014-11-21

    We conducted simulations to compare the potential imaging performance for breast cancer detection with High-Purity Germanium (HPGe) and Cadmium Zinc Telluride (CZT) systems with 1% and 3.8% energy resolution at 140 keV, respectively. Using the Monte Carlo N-Particle (MCNP5) simulation package, we modelled both 5 mm-thick CZT and 10 mm-thick HPGe detectors with the same parallel-hole collimator for the imaging of a breast/torso phantom. Simulated energy spectra were generated, and planar images were created for various energy windows around the 140 keV photopeak. Relative sensitivity and scatter and the torso fractions were calculated along with tumour contrast and signal-to-noise ratios (SNR). Simulations showed that utilizing a ±1.25% energy window with an HPGe system better suppressed torso background and small-angle scattered photons than a comparable CZT system using a -5%/+10% energy window. Both systems provided statistically similar contrast and SNR, with HPGe providing higher relative sensitivity. Lowering the counts of HPGe images to match CZT count density still yielded equivalent contrast between HPGe and CZT. Thus, an HPGe system may provide equivalent breast imaging capability at lower injected radioactivity levels when acquiring for equal imaging time.

  20. Advanced methods for preparation and characterization of infrared detector materials. [mercury cadmium tellurides

    NASA Technical Reports Server (NTRS)

    Lehoczky, S. L.; Szofran, F. R.; Martin, B. G.

    1980-01-01

    Mercury cadmium telluride crystals were prepared by the Bridgman method with a wide range of crystal growth rates and temperature gradients adequate to prevent constitutional supercooling under diffusion-limited, steady state, growth conditions. The longitudinal compositional gradients for different growth conditions and alloy compositions were calculated and compared with experimental data to develop a quantitative model of the crystal growth kinetics for the Hg(i-x)CdxTe alloys, and measurements were performed to ascertain the effect of growth conditions on radial compositional gradients. The pseudobinary HgTe-CdTe constitutional phase diagram was determined by precision differential thermal analysis measurements and used to calculate the segregation coefficient of Cd as a function of x and interface temperature. Computer algorithms specific to Hg(1-x)CdxTe were developed for calculations of the charge carrier concentrations, charge carrier mobilities, Hall coefficient, optical absorptance, and Fermi energy as functions of x, temperature, ionized donor and acceptor concentrations, and neutral defect concentrations.

  1. Investigations of Cadmium Manganese Telluride Crystals for Room-Temperature Radiation Detection

    SciTech Connect

    Yang, G.; Bolotnikov, A.; Camarda, G.; Cui, Y.; Hossain, A.; Kim, K.; Carcelen, V.; Gul, R.; James, R.

    2009-10-06

    Cadmium manganese telluride (CMT) has high potential as a material for room-temperature nuclear-radiation detectors. We investigated indium-doped CMT crystals taken from the stable growth region of the ingot, and compared its characteristics with that from the last-to-freeze region. We employed different techniques, including synchrotron white-beam X-ray topography (SWBXT), current-voltage (I-V) measurements, and low-temperature photoluminescence spectra, and we also assessed their responses as detectors to irradiation exposure. The crystal from the stable growth region proved superior to that from the last-to-freeze region; it is a single-grain crystal, free of twins, and displayed a resistivity higher by two orders-of-magnitude. The segregation of indium dopant in the ingot might be responsible for its better resistivity. Furthermore, we recorded a good response in the detector fabricated from the crystal taken from the stable growth region; its ({mu}{tau}){sub e} value was 2.6 x 10{sup -3} cm{sup 2}/V, which is acceptable for thin detectors, including for applications in medicine.

  2. Two-color detector: Mercury-cadmium-telluride as a terahertz and infrared detector

    SciTech Connect

    Sizov, F.; Zabudsky, V.; Petryakov, V.; Golenkov, A.; Andreyeva, K.; Tsybrii, Z.; Dvoretskii, S.

    2015-02-23

    In this paper, issues associated with the development of infrared (IR) and terahertz (THz) radiation detectors based on HgCdTe are discussed. Two-color un-cooled and cooled to 78 K narrow-gap mercury-cadmium-telluride semiconductor thin layers with antennas were considered both as sub-THz (sub-THz) direct detection bolometers and 3–10 μm IR photoconductors. The noise equivalent power (NEP) for one of the detectors studied at ν ≈ 140 GHz reaches NEP{sub 300 K} ≈ 4.5 × 10{sup −10} W/Hz{sup 1/2} and NEP{sub 78 K} ≈ 5 × 10{sup −9} W/Hz{sup 1/2}. The same detector used as an IR photoconductor showed the responsivity at temperatures T = 78 K and 300 K with signal-to-noise ratio S/N ≈ 750 and 50, respectively, under illumination by using IR monochromator and globar as a thermal source.

  3. Investigations of Cadmium Manganese Telluride Crystals for Room-temperature Radiation Detection

    SciTech Connect

    Yang, G.; Bolotnikov, A; Li, L; Camarda, G; Cui, Y; Hossain, A; Kim, K; Carcelen, V; Gul, R; James, R

    2010-01-01

    Cadmium manganese telluride (CMT) has high potential as a material for room-temperature nuclear-radiation detectors. We investigated indium-doped CMT crystals taken from the stable growth region of the ingot and compared its characteristics with that from the last-to-freeze region. We employed different techniques, including synchrotron white-beam x-ray topography (SWBXT), current-voltage (I-V) measurement, and low-temperature photoluminescence spectra, and we also assessed their responses as detectors of radiation exposure. The crystal from the stable growth region proved to be superior to that from the last-to-freeze region; it is a single-grain crystal, free of twins, and displayed a resistivity higher by one order of magnitude. The segregation of indium dopant in the ingot might be responsible for its better resistivity. Furthermore, we recorded a good response in the detector fabricated from the crystal taken from the stable growth region; its ({mu}{tau})e value was 2.6 x 10{sup -3} cm{sup 2}/V, which is acceptable for thin detectors, including their application in medicine.

  4. Characterization of single-sided cadmium zinc telluride strip detectors for high energy astrophysics applications

    NASA Astrophysics Data System (ADS)

    Donmez, Burcin

    Cadmium zinc telluride (CdZnTe or CZT) was introduced as a new room temperature semiconductor detector due to its good energy resolution, high atomic number, high density and good stopping power in the early 1990s. UNH has focused on developing CZT strip detector designs for astrophysical measurement applications in the 0.05 to 1 MeV photon energy range. This thesis presents characterization efforts of two types of single-sided CZT strip detector: non- charge sharing orthogonal coplanar strip detectors and charge-sharing strip detectors. The characterization includes spectroscopy, imaging, uniformity and efficiency measurements. Measured energy resolutions with both detector designs are better than those obtainable with NaI(Tl), the scintillator detector material most often used in this energy range. The 3-D imaging capabilities of the detectors were studied using collimated 122 keV photons. Spatial resolution is better than the unit cell pitch in the x and y dimension, and less than 1 mm in the z dimension for both designs. The detection efficiency for photopeak events was calculated for the single-sided charge-sharing CZT strip detector. We also report on Monte Carlo simulations (GEANT4 v7.1) to investigate the effect of multi-hits on detector performance for both spectroscopy and imaging. We compare simulation results with data obtained from laboratory measurements and discuss the implications for future strip detector designs.

  5. Cadmium telluride quantum dot nanoparticle cytotoxicity and effects on model immune responses to Pseudomonas aeruginosa

    PubMed Central

    Nguyen, Kathy C; Seligy, Vern L

    2013-01-01

    This study examines dose effects of cadmium telluride quantum dots (CdTe-QDs) from two commercial sources on model macrophages (J774A.1) and colonic epithelial cells (HT29). Effects on cellular immune signalling responses were measured following sequential exposure to QDs and Pseudomonas aeruginosa strain PA01. At CdTe-QD concentrations between 10-2 and 10 µg/ml, cells exhibited changes in metabolism and morphology. Confocal imaging revealed QD internalisation and changes in cell–cell contacts, shapes and internal organisations. QD doses below 10-2 µg/ml caused no observed effects. When QD exposures at 10-7 to 10-3 µg/ml preceded PA01 (107 bacteria/ml) challenges, there were elevated cytotoxicity (5–22%, p < 0.05) and reduced levels (two- to fivefold, p < 0.001) of nitric oxide (NO), TNF-α, KC/CXC−1 and IL-8, compared with PA01 exposures alone. These results demonstrate that exposures to sub-toxic levels of CdTe-QDs can depress cell immune-defence functions, which if occurred in vivo would likely interfere with normal neutrophil recruitment for defence against bacteria. PMID:22264036

  6. Characterization of pixelated cadmium-zinc-telluride detectors for astrophysical application

    NASA Astrophysics Data System (ADS)

    Gaskin, Jessica A.; Sharma, Dharma P.; Ramsey, Brian D.; Mitchell, Shannon; Seller, Paul

    2004-02-01

    Charge sharing and charge loss measurements for a many-pixel, Cadmium-Zinc-Telluride (CdZnTe) detector are discussed. These properties that are set by the material characteristics and the detector geometry help to define the limiting energy resolution and spatial resolution of the detector in question. The detector consists of a 1-mm-thick piece of CdZnTe sputtered with a 16x16 array of pixels with a 300 micron pixel pitch (inter-pixel gap is 50 microns). This crystal is bonded to a custom-built readout chip (ASIC) providing all front-end electronics to each of the 256 independent pixels. These types of detectors act as precursors to that which will be used at the focal plane of the High Energy Replicated Optics (HERO) telescope currently being developed at Marshall Space Flight Center. With a telescope focal length of 6 meters, the detector needs to have a spatial resolution of around 200 microns in order to take full advantage of the HERO angular resolution. We discuss to what degree charge sharing degrades energy resolution through charge loss and improves spatial resolution through position interpolation.

  7. Low-cost cadmium zinc telluride radiation detectors based on electron-transport-only designs

    SciTech Connect

    B. A. Brunett; J. C. Lund; J. M. Van Scyoc; N. R. Hilton; E. Y. Lee; R. B. James

    1999-01-01

    The goal of this project was to utilize a novel device design to build a compact, high resolution, room temperature operated semiconductor gamma ray sensor. This sensor was constructed from a cadmium zinc telluride (CZT) crystal. It was able to both detect total radiation intensity and perform spectroscopy on the detected radiation. CZT detectors produced today have excellent electron charge carrier collection, but suffer from poor hole collection. For conventional gamma-ray spectrometers, both the electrons and holes must be collected with high efficiency to preserve energy resolution. The requirement to collect the hole carriers, which have relatively low lifetimes, limits the efficiency and performance of existing experimental devices. By implementing novel device designs such that the devices rely only on the electron signal for energy information, the sensitivity of the sensors for detecting radiation can be increased substantially. In this report the authors describe a project to develop a new type of electron-only CZT detector. They report on their successful efforts to design, implement and test these new radiation detectors. In addition to the design and construction of the sensors the authors also report, in considerable detail, on the electrical characteristics of the CZT crystals used to make their detectors.

  8. Automated inspection of tellurium inclusions in cadmium zinc telluride (CdZnTe)

    NASA Astrophysics Data System (ADS)

    Nelson, Matthew P.; Ribar, Juliana M.; Schweitzer, Robert; Keitzer, Scott A.; Treado, Patrick J.; Harris, Karl A.; Reese, Danny J.

    2000-11-01

    As the demand for high quality, low cost X-ray, (gamma) -ray and imaging detector devices increases, there is a need to improve the quality and production yield of semiconductor materials used in these devices. One effective strategy for improving semiconductor device yield is through the use of better device characterization tools that can rapidly and nondestructively identify defects at early stages in the fabrication process. Early screening helps to elucidate the underlying causes of defects and to reduce downstream costs associated with processing defect laden materials that are ultimately scrapped. We report here a method for characterizing tellurium inclusion defects in cadmium zinc telluride semiconductor materials based on near infrared imaging. With this approach, large area wafers are inspected rapidly and non-destructively in two and three spatial dimensions by collecting NIR image frames at multiple regions of interest throughout the wafer using an automated NIR imaging system. The NIR image frames are subjected to image processing algorithms including background correction and image binarization. Particle analysis is performed on the binarized images to reveal tellurium inclusion statistics, sufficient to pass or fail wafers. In addition, data visualization software is used to view the tellurium inclusions in two and three spatial dimensions.

  9. Simulation study comparing high-purity germanium and cadmium zinc telluride detectors for breast imaging

    NASA Astrophysics Data System (ADS)

    Campbell, D. L.; Peterson, T. E.

    2014-11-01

    We conducted simulations to compare the potential imaging performance for breast cancer detection with High-Purity Germanium (HPGe) and Cadmium Zinc Telluride (CZT) systems with 1% and 3.8% energy resolution at 140 keV, respectively. Using the Monte Carlo N-Particle (MCNP5) simulation package, we modelled both 5 mm-thick CZT and 10 mm-thick HPGe detectors with the same parallel-hole collimator for the imaging of a breast/torso phantom. Simulated energy spectra were generated, and planar images were created for various energy windows around the 140 keV photopeak. Relative sensitivity and scatter and the torso fractions were calculated along with tumour contrast and signal-to-noise ratios (SNR). Simulations showed that utilizing a ±1.25% energy window with an HPGe system better suppressed torso background and small-angle scattered photons than a comparable CZT system using a -5%/+10% energy window. Both systems provided statistically similar contrast and SNR, with HPGe providing higher relative sensitivity. Lowering the counts of HPGe images to match CZT count density still yielded equivalent contrast between HPGe and CZT. Thus, an HPGe system may provide equivalent breast imaging capability at lower injected radioactivity levels when acquiring for equal imaging time.

  10. Temperature dependent van der Pauw-Hall measurements on sodium doped single crystalline cadmium telluride

    SciTech Connect

    Ahmad, Faisal R.

    2015-03-21

    In this report, results of the temperature dependent electrical conductivity measurements conducted on single crystalline cadmium telluride (CdTe), containing sodium (Na) impurities are presented and discussed. The electrical conductivity measurements were conducted using an apparatus that allowed the implementation of a standard van der Pauw-Hall effect technique through which the electrical resistivity, concentration of majority carriers, as well as the carrier mobility were determined for temperatures ranging between 24 K and 350 K. Over this temperature range, the electrical resistivity was observed to change by 7 orders of magnitude. Hall measurements showed that the hole concentration at 300 K was ∼3 × 10{sup 15 }cm{sup –3} and the hole mobility at the same temperature was ∼80 cm{sup 2}/V s. Measuring the concentration of holes as a function of the sample temperature enabled the estimation of the acceptor energy level with respect to the valence band maximum to be ∼60 meV. The same data also revealed the potential presence of a compensating donor level. Furthermore, the hole mobility was also analyzed over the entire temperature range and the data revealed that above 100 K, the carrier mobility was dominated by the scattering of holes from lattice vibrations.

  11. Measurement and Modeling of Blocking Contacts for Cadmium Telluride Gamma Ray Detectors

    SciTech Connect

    Beck, Patrick R.

    2010-01-07

    Gamma ray detectors are important in national security applications, medicine, and astronomy. Semiconductor materials with high density and atomic number, such as Cadmium Telluride (CdTe), offer a small device footprint, but their performance is limited by noise at room temperature; however, improved device design can decrease detector noise by reducing leakage current. This thesis characterizes and models two unique Schottky devices: one with an argon ion sputter etch before Schottky contact deposition and one without. Analysis of current versus voltage characteristics shows that thermionic emission alone does not describe these devices. This analysis points to reverse bias generation current or leakage through an inhomogeneous barrier. Modeling the devices in reverse bias with thermionic field emission and a leaky Schottky barrier yields good agreement with measurements. Also numerical modeling with a finite-element physics-based simulator suggests that reverse bias current is a combination of thermionic emission and generation. This thesis proposes further experiments to determine the correct model for reverse bias conduction. Understanding conduction mechanisms in these devices will help develop more reproducible contacts, reduce leakage current, and ultimately improve detector performance.

  12. Cadmium telluride nanoparticles loaded on activated carbon as adsorbent for removal of sunset yellow.

    PubMed

    Ghaedi, M; Hekmati Jah, A; Khodadoust, S; Sahraei, R; Daneshfar, A; Mihandoost, A; Purkait, M K

    2012-05-01

    Adsorption is a promising technique for decolorization of effluents of textile dyeing industries but its application is limited due to requirement of high amounts of adsorbent required. The objective of this study was to assess the potential of cadmium telluride nanoparticles loaded onto activated carbon (CdTN-AC) for the removal of sunset yellow (SY) dye from aqueous solution. Adsorption studies were conducted in a batch mode varying solution pH, contact time, initial dye concentration, CdTN-AC dose, and temperature. In order to investigate the efficiency of SY adsorption on CdTN-AC, pseudo-first-order, pseudo-second-order, Elovich, and intra-particle diffusion kinetic models were studied. It was observed that the pseudo-second-order kinetic model fits better than other kinetic models with good correlation coefficient. Equilibrium data were fitted to the Langmuir model. Thermodynamic parameters such as enthalpy, entropy, activation energy, and sticking probability were also calculated. It was found that the sorption of SY onto CdTN-AC was spontaneous and endothermic in nature. The proposed adsorbent is applicable for SY removal from waste of real effluents including pea-shooter, orange drink and jelly banana with efficiency more than 97%.

  13. Cadmium telluride nanoparticles loaded on activated carbon as adsorbent for removal of sunset yellow

    NASA Astrophysics Data System (ADS)

    Ghaedi, M.; Hekmati Jah, A.; Khodadoust, S.; Sahraei, R.; Daneshfar, A.; Mihandoost, A.; Purkait, M. K.

    2012-05-01

    Adsorption is a promising technique for decolorization of effluents of textile dyeing industries but its application is limited due to requirement of high amounts of adsorbent required. The objective of this study was to assess the potential of cadmium telluride nanoparticles loaded onto activated carbon (CdTN-AC) for the removal of sunset yellow (SY) dye from aqueous solution. Adsorption studies were conducted in a batch mode varying solution pH, contact time, initial dye concentration, CdTN-AC dose, and temperature. In order to investigate the efficiency of SY adsorption on CdTN-AC, pseudo-first-order, pseudo-second-order, Elovich, and intra-particle diffusion kinetic models were studied. It was observed that the pseudo-second-order kinetic model fits better than other kinetic models with good correlation coefficient. Equilibrium data were fitted to the Langmuir model. Thermodynamic parameters such as enthalpy, entropy, activation energy, and sticking probability were also calculated. It was found that the sorption of SY onto CdTN-AC was spontaneous and endothermic in nature. The proposed adsorbent is applicable for SY removal from waste of real effluents including pea-shooter, orange drink and jelly banana with efficiency more than 97%.

  14. Study of a high-resolution, 3D positioning cadmium zinc telluride detector for PET

    NASA Astrophysics Data System (ADS)

    Gu, Y.; Matteson, J. L.; Skelton, R. T.; Deal, A. C.; Stephan, E. A.; Duttweiler, F.; Gasaway, T. M.; Levin, C. S.

    2011-03-01

    This paper investigates the performance of 1 mm resolution cadmium zinc telluride (CZT) detectors for positron emission tomography (PET) capable of positioning the 3D coordinates of individual 511 keV photon interactions. The detectors comprise 40 mm × 40 mm × 5 mm monolithic CZT crystals that employ a novel cross-strip readout with interspersed steering electrodes to obtain high spatial and energy resolution. The study found a single anode FWHM energy resolution of 3.06 ± 0.39% at 511 keV throughout most of the detector volume. Improved resolution is expected with properly shielded front-end electronics. Measurements made using a collimated beam established the efficacy of the steering electrodes in facilitating enhanced charge collection across anodes, as well as a spatial resolution of 0.44 ± 0.07 mm in the direction orthogonal to the electrode planes. Finally, measurements based on coincidence electronic collimation yielded a point spread function with 0.78 ± 0.10 mm FWHM, demonstrating 1 mm spatial resolution capability transverse to the anodes—as expected from the 1 mm anode pitch. These findings indicate that the CZT-based detector concept has excellent performance and shows great promise for a high-resolution PET system.

  15. Study of a high-resolution, 3D positioning cadmium zinc telluride detector for PET.

    PubMed

    Gu, Y; Matteson, J L; Skelton, R T; Deal, A C; Stephan, E A; Duttweiler, F; Gasaway, T M; Levin, C S

    2011-03-21

    This paper investigates the performance of 1 mm resolution cadmium zinc telluride (CZT) detectors for positron emission tomography (PET) capable of positioning the 3D coordinates of individual 511 keV photon interactions. The detectors comprise 40 mm × 40 mm × 5 mm monolithic CZT crystals that employ a novel cross-strip readout with interspersed steering electrodes to obtain high spatial and energy resolution. The study found a single anode FWHM energy resolution of 3.06 ± 0.39% at 511 keV throughout most of the detector volume. Improved resolution is expected with properly shielded front-end electronics. Measurements made using a collimated beam established the efficacy of the steering electrodes in facilitating enhanced charge collection across anodes, as well as a spatial resolution of 0.44 ± 0.07 mm in the direction orthogonal to the electrode planes. Finally, measurements based on coincidence electronic collimation yielded a point spread function with 0.78 ± 0.10 mm FWHM, demonstrating 1 mm spatial resolution capability transverse to the anodes-as expected from the 1 mm anode pitch. These findings indicate that the CZT-based detector concept has excellent performance and shows great promise for a high-resolution PET system.

  16. Electronic characterization of defects in narrow gap semiconductors: Comparison of electronic energy levels and formation energies in mercury cadmium telluride, mercury zinc telluride, and mercury zinc selenide

    NASA Technical Reports Server (NTRS)

    Patterson, James D.; Li, Wei-Gang

    1995-01-01

    The project has evolved to that of using Green's functions to predict properties of deep defects in narrow gap materials. Deep defects are now defined as originating from short range potentials and are often located near the middle of the energy gap. They are important because they affect the lifetime of charge carriers and hence the switching time of transistors. We are now moving into the arena of predicting formation energies of deep defects. This will also allow us to make predictions about the relative concentrations of the defects that could be expected at a given temperature. The narrow gap materials mercury cadmium telluride (MCT), mercury zinc telluride (MZT), and mercury zinc selenide (MZS) are of interest to NASA because they have commercial value for infrared detecting materials, and because there is a good possibility that they can be grown better in a microgravity environment. The uniform growth of these crystals on earth is difficult because of convection (caused by solute depletion just ahead of the growing interface, and also due to thermal gradients). In general it is very difficult to grow crystals with both radial and axial homogeneity.

  17. Electronic characterization of defects in narrow gap semiconductors: Comparison of electronic energy levels and formation energies in mercury cadmium telluride, mercury zinc telluride, and mercury zinc selenide

    NASA Astrophysics Data System (ADS)

    Patterson, James D.; Li, Wei-Gang

    1995-03-01

    The project has evolved to that of using Green's functions to predict properties of deep defects in narrow gap materials. Deep defects are now defined as originating from short range potentials and are often located near the middle of the energy gap. They are important because they affect the lifetime of charge carriers and hence the switching time of transistors. We are now moving into the arena of predicting formation energies of deep defects. This will also allow us to make predictions about the relative concentrations of the defects that could be expected at a given temperature. The narrow gap materials mercury cadmium telluride (MCT), mercury zinc telluride (MZT), and mercury zinc selenide (MZS) are of interest to NASA because they have commercial value for infrared detecting materials, and because there is a good possibility that they can be grown better in a microgravity environment. The uniform growth of these crystals on earth is difficult because of convection (caused by solute depletion just ahead of the growing interface, and also due to thermal gradients). In general it is very difficult to grow crystals with both radial and axial homogeneity.

  18. Defect characterization in cadmium telluride and cadmium-zinc-tellurium crystals

    NASA Astrophysics Data System (ADS)

    Awadalla, Salah Abdo

    Intrinsic defects and impurities in undoped CdTe and Cd1-x ZnxTe semiconductor compounds have been investigated using thermally stimulated spectroscopy with the general aim of identifying and then understanding the effects of the defects on the electrical and optical properties of these compounds. In order to identify and understand the effects of these defects (trapping levels), the samples were subjected to room temperature deformation, high temperature annealing, and dopants diffusion. The samples were always analyzed before and after any process. It is found that the trapping levels observed at ˜61 K and ˜114 K with thermal ionization energies of 0.12 +/- 0.01 eV and 0.23 +/- 0.01 eV and trapping cross-sections of 4.7 x 10-16 and 7.8 x 10-17 cm2 are associated with the isolated first and second ionized state of the cadmium vacancy, while trapping levels observed at ˜51 K and ˜94 K with thermal ionization energies of 0.09 +/- 0.01 eV and 0.18 +/- 0.01 eV and trapping cross-sections of 9.3 x 10 -17 and 6.8 x 10-17 cm2 are associated with first and second states of the isoelectronic oxygen-cadmium vacancy complex (VCd-OTe) respectively. In addition, we found that deep level trapping states located near the middle of the band gap (in the region between 230 K and 267 K) in undoped as grown CdTe are related to the tellurium antisite-cadmium vacancy complex (TeCd-V Cd) where the lowest thermal ionization state is 0.78 +/- 0.01 eV. The thermal ionization energies (transition energies) were extracted using variable heating rate and/or initial rise methods. Our results have been reinforced with theoretical calculations using linearized augmented plane wave (LAPW) within the local density approximation (LDA). Also, from our room temperature deformation, we have found evidence of three levels of dislocation defects in CdTe crystals. The first two energy levels, with ionization energies of E1 = 0.06 +/- 0.01 eV and E2 = 0.38 +/- 0.01 eV are due to Cd dislocations. The

  19. Indium donor/metal vacancy defect complexes in cadmium telluride studied with perturbed angular correlation spectroscopy

    NASA Astrophysics Data System (ADS)

    Griffith, John Warren

    Semi-insulating, powder samples of Cadmium Telluride (CdTe) have been studied using 111In Time Differential Perturbed Angular Correlation (PAC) Spectroscopy. The samples have been lightly doped (˜10 12 cm-3) with 111In atoms, which occupy well-defined metal (Cd) lattice sites and act as probes of the local environment. These substitutional donors form a single defect complex in CdTe. This complex has been identified and characterized as a function of temperature. Those indium probes that are not complexed occupy metal lattice sites with no defect in the local vicinity. Samples containing metal vacancy concentrations as large as 500 ppm have been prepared by a high temperature anneal and quench. The defect complex involves the trapping of a cadmium metal vacancy bound to the indium probe. The electric field gradient (EFG) experienced by probe atoms has a coupling constant of nuQ = 61.5(5) MHz and is not axially symmetric, with the asymmetry parameter given by eta = 0.16(4). It is believed that this asymmetry results from a relaxation of the chalcogen (Te) atoms adjacent to the metal vacancy, with the tellurium atom shared by the probe atom and the vacancy providing the dominant contribution. The fraction of complexed probe atoms increases as the sample temperature is decreased, and is still increasing at room temperature. Complexed fractions are reproducible on cycling within the temperature range 40 to 200°C. The binding energy of the complex has been measured to be 0.15(2) eV and is independent of metal vacancy concentration, which varies and is dependent on the details of the quench. In rapidly cooled samples, a non-equilibrium number of these defect complexes is observed. This state equilibrates with a time constant of 45(5) hours at 15°C, implying that at least one of the two constituents involved in the complex has a significant diffusion rate at this temperature. Under the assumption that vacancy diffusion mechanisms dominate at this temperature, it is

  20. Chemiluminescence studies between aqueous phase synthesized mercaptosuccinic acid capped cadmium telluride quantum dots and luminol-H2O2

    NASA Astrophysics Data System (ADS)

    Kaviyarasan, Kulandaivelu; Anandan, Sambandam; Mangalaraja, Ramalinga Viswanathan; Asiri, Abdullah M.; Wu, Jerry J.

    2016-08-01

    Mercaptosuccinic acid capped Cadmium telluride quantum dots have been successfully synthesized via aqueous phase method. The products were well characterized by a number of analytical techniques, including FT-IR, XRD, HRTEM, and a corrected particle size analysis by the statistical treatment of several AFM measurements. Chemiluminescence experiments were performed to explore the resonance energy transfer between chemiluminescence donor (luminol-H2O2 system) and acceptor CdTe QDs. The combination of such donor and acceptor dramatically reduce the fluorescence while compared to pristine CdTe QDs without any exciting light source, which is due to the occurrence of chemiluminescence resonance energy transfer (CRET) processes.

  1. Cadmium zinc telluride based infrared interferometry for X-ray detection

    SciTech Connect

    Lohstroh, A. Della Rocca, I.; Parsons, S.; Langley, A.; Shenton-Taylor, C.; Blackie, D.

    2015-02-09

    Cadmium Zinc Telluride (CZT) is a wide band gap semiconductor for room temperature radiation detection. The electro-optic Pockels effect of the material has been exploited in the past to study electric field non-uniformities and their consequence on conventional detector signals in CZT, by imaging the intensity distribution of infrared (IR) light transmitted through a device placed between crossed polarizers. Recently, quantitative monitoring of extremely high intensity neutron pulses through the change of transmitted IR intensity was demonstrated, offering the advantage to place sensitive electronics outside the measured radiation field. In this work, we demonstrate that X-ray intensity can be deduced directly from measuring the change in phase of 1550 nm laser light transmitted through a 7 × 7 × 2 mm{sup 3} CZT based Pockels cell in a simple Mach Zehnder interferometer. X-rays produced by a 50 kVp Mo X-ray tube incident on the CZT cathode surface placed at 7 mm distance cause a linearly increasing phase shift above 0.3 mA tube current, with 1.58 ± 0.02 rad per mA for an applied bias of 500 V across the 2 mm thick device. Pockels images confirm that the sample properties are in agreement with the literature, exhibiting electric field enhancement near the cathode under irradiation, which may cause the non-linearity at low X-ray tube anode current settings. The laser used to probe the X-ray intensity causes itself some space charge, whose spatial distribution does not seem to be exclusively determined by the incident laser position, i.e., charge carrier generation location, with respect to the electrodes.

  2. Development and evaluation of polycrystalline cadmium telluride dosimeters for accurate quality assurance in radiation therapy

    NASA Astrophysics Data System (ADS)

    Oh, K.; Han, M.; Kim, K.; Heo, Y.; Moon, C.; Park, S.; Nam, S.

    2016-02-01

    For quality assurance in radiation therapy, several types of dosimeters are used such as ionization chambers, radiographic films, thermo-luminescent dosimeter (TLD), and semiconductor dosimeters. Among them, semiconductor dosimeters are particularly useful for in vivo dosimeters or high dose gradient area such as the penumbra region because they are more sensitive and smaller in size compared to typical dosimeters. In this study, we developed and evaluated Cadmium Telluride (CdTe) dosimeters, one of the most promising semiconductor dosimeters due to their high quantum efficiency and charge collection efficiency. Such CdTe dosimeters include single crystal form and polycrystalline form depending upon the fabrication process. Both types of CdTe dosimeters are commercially available, but only the polycrystalline form is suitable for radiation dosimeters, since it is less affected by volumetric effect and energy dependence. To develop and evaluate polycrystalline CdTe dosimeters, polycrystalline CdTe films were prepared by thermal evaporation. After that, CdTeO3 layer, thin oxide layer, was deposited on top of the CdTe film by RF sputtering to improve charge carrier transport properties and to reduce leakage current. Also, the CdTeO3 layer which acts as a passivation layer help the dosimeter to reduce their sensitivity changes with repeated use due to radiation damage. Finally, the top and bottom electrodes, In/Ti and Pt, were used to have Schottky contact. Subsequently, the electrical properties under high energy photon beams from linear accelerator (LINAC), such as response coincidence, dose linearity, dose rate dependence, reproducibility, and percentage depth dose, were measured to evaluate polycrystalline CdTe dosimeters. In addition, we compared the experimental data of the dosimeter fabricated in this study with those of the silicon diode dosimeter and Thimble ionization chamber which widely used in routine dosimetry system and dose measurements for radiation

  3. A Cadmium telluride micro-Spectometers Hard X ray Polarimeter for a balloon borne payload

    NASA Astrophysics Data System (ADS)

    Caroli, Ezio; Hernanz, Margarita; Ferrando, Philippe; Del Sordo, Stefano; Stephen, John; Laurent, Philippe; Alvarez, Jose M.; Auricchio, Natalia; Budtz-Jorgensen, Carl; Curado da Silva4, Rui M.; Limousin, Olivier; Galvez, Jose L.; Gloster, Paul Colin; Isern, Jordi; Maia, Jorge M.

    2012-07-01

    In the next generation of space instrumentation for hard X-ray astrophysics, the measurement of the polarization status of cosmic sources will be a key observational parameter in order to help understand the various production mechanisms and the source geometry. As polarisation observations are very difficult to perform, new telescopes operating in this energy range should be optimized for this type of measurement. In this perspective, we present the concept of a small high-performance spectrometer designed to operate as a scattering polarimeter between 100 and 500 keV and suitable for a stratospheric balloon-borne payload: CμSP (Cadmium telluride μ-Spectrometers Polarimeter). This instrument will be dedicated to perform an accurate and reliable measurement of the polarization status of the Crab pulsar, i.e. the polarization level and direction. The detector with 3D spatial resolution is made of CZT spectrometers in a highly segmented configuration in order to enhance as much as possible the sensitivity to the linear polarisation of detected photons. We discuss different configurations based on recent development results as well as possible improvements under study. Furthermore we describe a possible baseline design of the payload, which can also be seen as a pathfinder for a high performance detector for the next generation of hard X and soft gamma ray telescopes based on high energy focussing optics (e.g. Laue lenses) and/or advanced Compton instruments. Finally, we present Monte Carlo evaluations of the achievable sensitivity to polarisation as a function of different detector characteristics.

  4. Charge Loss and Charge Sharing Measurements for Two Different Pixelated Cadmium-Zinc-Telluride Detectors

    NASA Technical Reports Server (NTRS)

    Gaskin, Jessica; Sharma, Dharma; Ramsey, Brian; Seller, Paul

    2003-01-01

    As part of ongoing research at Marshall Space Flight Center, Cadmium-Zinc- Telluride (CdZnTe) pixilated detectors are being developed for use at the focal plane of the High Energy Replicated Optics (HERO) telescope. HERO requires a 64x64 pixel array with a spatial resolution of around 200 microns (with a 6m focal length) and high energy resolution (< 2% at 60keV). We are currently testing smaller arrays as a necessary first step towards this goal. In this presentation, we compare charge sharing and charge loss measurements between two devices that differ both electronically and geometrically. The first device consists of a 1-mm-thick piece of CdZnTe that is sputtered with a 4x4 array of pixels with pixel pitch of 750 microns (inter-pixel gap is 100 microns). The signal is read out using discrete ultra-low-noise preamplifiers, one for each of the 16 pixels. The second detector consists of a 2-mm-thick piece of CdZnTe that is sputtered with a 16x16 array of pixels with a pixel pitch of 300 microns (inter-pixel gap is 50 microns). Instead of using discrete preamplifiers, the crystal is bonded to an ASIC that provides all of the front-end electronics to each of the 256 pixels. what degree the bias voltage (i.e. the electric field) and hence the drift and diffusion coefficients affect our measurements. Further, we compare the measured results with simulated results and discuss to

  5. Mercury-Cadmium-Telluride Focal Plane Array Performance Under Non-Standard Operating Conditions

    NASA Technical Reports Server (NTRS)

    Richardson, Brandon S.; Eastwood, Michael L.; Bruce, Carl F.; Green, Robert O.; Coles, J. B.

    2011-01-01

    This paper highlights a new technique that allows the Teledyne Scientific & Imaging LLC TCM6604A Mercury-Cadmium-Telluride (MCT) Focal Plane Array (FPA) to operate at room temperature. The Teledyne MCT FPA has been a standard in Imaging Spectroscopy since its creation in the 1980's. This FPA has been used in applications ranging from space instruments such as CRISM, M3 and ARTEMIS to airborne instruments such as MaRS and the Next Generation AVIRIS Instruments1. Precise focal plane alignment is always a challenge for such instruments. The current FPA alignment process results in multiple cold cycles requiring week-long durations, thereby increasing the risk and cost of a project. These alignment cycles are necessary because optimal alignment is approached incrementally and can only be measured with the FPA and Optics at standard operating conditions, requiring a cold instrument. Instruments using this FPA are normally cooled to temperatures below 150K for the MCT FPA to properly function. When the FPA is run at higher temperatures the dark current increases saturating the output. This paper covers the prospect of warm MCT FPA operation from a theoretical and experimental perspective. We discuss the empirical models and physical laws that govern MCT material properties and predict the optimal settings that will result in the best MCT PA performance at 300K. Theoretical results are then calculated for the proposed settings. We finally present the images and data obtained using the actual system with the warm MCT FPA settings. The paper concludes by emphasizing the strong positive correlation between the measured values and the theoretical results.

  6. Charge Loss and Charge Sharing Measurements for Two Different Pixelated Cadmium-Zinc-Telluride Detectors

    NASA Technical Reports Server (NTRS)

    Gaskin, Jessica; Sharma, Dharma; Ramsey, Brian; Seller, Paul

    2003-01-01

    As part of ongoing research at Marshall Space Flight Center, Cadmium-Zinc- Telluride (CdZnTe) pixilated detectors are being developed for use at the focal plane of the High Energy Replicated Optics (HERO) telescope. HERO requires a 64x64 pixel array with a spatial resolution of around 200 microns (with a 6m focal length) and high energy resolution (< 2% at 60keV). We are currently testing smaller arrays as a necessary first step towards this goal. In this presentation, we compare charge sharing and charge loss measurements between two devices that differ both electronically and geometrically. The first device consists of a 1-mm-thick piece of CdZnTe that is sputtered with a 4x4 array of pixels with pixel pitch of 750 microns (inter-pixel gap is 100 microns). The signal is read out using discrete ultra-low-noise preamplifiers, one for each of the 16 pixels. The second detector consists of a 2-mm-thick piece of CdZnTe that is sputtered with a 16x16 array of pixels with a pixel pitch of 300 microns (inter-pixel gap is 50 microns). Instead of using discrete preamplifiers, the crystal is bonded to an ASIC that provides all of the front-end electronics to each of the 256 pixels. what degree the bias voltage (i.e. the electric field) and hence the drift and diffusion coefficients affect our measurements. Further, we compare the measured results with simulated results and discuss to

  7. Low-dose thallium-201 protocol with a cadmium-zinc-telluride cardiac camera.

    PubMed

    Songy, Bernard; Guernou, Mohamed; Lussato, David; Queneau, Mathieu; Geronazzo, Ricardo

    2012-05-01

    Thallium-201 is efficient for myocardial perfusion imaging, but leads to relatively high radiation exposure in patients. The purpose of this study was to compare the efficiency of low-dose thallium-201 imaging with cadmium-zinc-telluride (CZT) cameras with regular-dose thallium-201 imaging with conventional cameras. We prospectively studied 137 consecutive patients referred for stress myocardial perfusion imaging who had previously had a myocardial single-photon emission computed tomography with thallium-201. We injected at stress a low dose of thallium-201 (1.1 MBq/kg, 28 µCi/kg), performed a 5-7 min scan with a CZT camera (GE DNM 530c), and assessed redistribution imaging when the initial images were abnormal. We compared the CZT scan with the conventional dual-head tomographic camera scan taken previously with a regular dose of thallium-201. The average delay between both scans was 22 months. The stress dose was 88 ± 16 (2.38 ± 0.43 mCi) versus 125 ± 13 MBq (3.38 ± 0.34 mCi; a 30% reduction). The time for camera acquisition was 6 versus 13 min (a 54% reduction). The myocardial counts were increased two-fold with CZT (mean: 446 Kcounts). The quality of CZT images was better in 69% of the cases. There were 59 artifacts with conventional cameras and 29 artifacts with CZT (P<0.01). The diagnostic agreement was calculated in patients without clinical or angiographic changes between both scans (115 patients) and was high (97%). The effective dose at stress was less than 12 mSv. High myocardial counting allowed for further decrease in the injected activity, leading to an effective dose as low as 8 mSv. With reduced activities of thallium-201 and low effective doses, the CZT camera provides reliable, high-quality imaging.

  8. Mercury-Cadmium-Telluride Focal Plane Array Performance Under Non-Standard Operating Conditions

    NASA Technical Reports Server (NTRS)

    Richardson, Brandon S.; Eastwood, Michael L.; Bruce, Carl F.; Green, Robert O.; Coles, J. B.

    2011-01-01

    This paper highlights a new technique that allows the Teledyne Scientific & Imaging LLC TCM6604A Mercury-Cadmium-Telluride (MCT) Focal Plane Array (FPA) to operate at room temperature. The Teledyne MCT FPA has been a standard in Imaging Spectroscopy since its creation in the 1980's. This FPA has been used in applications ranging from space instruments such as CRISM, M3 and ARTEMIS to airborne instruments such as MaRS and the Next Generation AVIRIS Instruments1. Precise focal plane alignment is always a challenge for such instruments. The current FPA alignment process results in multiple cold cycles requiring week-long durations, thereby increasing the risk and cost of a project. These alignment cycles are necessary because optimal alignment is approached incrementally and can only be measured with the FPA and Optics at standard operating conditions, requiring a cold instrument. Instruments using this FPA are normally cooled to temperatures below 150K for the MCT FPA to properly function. When the FPA is run at higher temperatures the dark current increases saturating the output. This paper covers the prospect of warm MCT FPA operation from a theoretical and experimental perspective. We discuss the empirical models and physical laws that govern MCT material properties and predict the optimal settings that will result in the best MCT PA performance at 300K. Theoretical results are then calculated for the proposed settings. We finally present the images and data obtained using the actual system with the warm MCT FPA settings. The paper concludes by emphasizing the strong positive correlation between the measured values and the theoretical results.

  9. Breast composition measurement with a cadmium-zinc-telluride based spectral computed tomography system

    PubMed Central

    Ding, Huanjun; Ducote, Justin L.; Molloi, Sabee

    2012-01-01

    Purpose: To investigate the feasibility of breast tissue composition in terms of water, lipid, and protein with a cadmium-zinc-telluride (CZT) based computed tomography (CT) system to help better characterize suspicious lesions. Methods: Simulations and experimental studies were performed using a spectral CT system equipped with a CZT-based photon-counting detector with energy resolution. Simulations of the figure-of-merit (FOM), the signal-to-noise ratio (SNR) of the dual energy image with respect to the square root of mean glandular dose (MGD), were performed to find the optimal configuration of the experimental acquisition parameters. A calibration phantom 3.175 cm in diameter was constructed from polyoxymethylene plastic with cylindrical holes that were filled with water and oil. Similarly, sized samples of pure adipose and pure lean bovine tissues were used for the three-material decomposition. Tissue composition results computed from the images were compared to the chemical analysis data of the tissue samples. Results: The beam energy was selected to be 100 kVp with a splitting energy of 40 keV. The tissue samples were successfully decomposed into water, lipid, and protein contents. The RMS error of the volumetric percentage for the three-material decomposition, as compared to data from the chemical analysis, was estimated to be approximately 5.7%. Conclusions: The results of this study suggest that the CZT-based photon-counting detector may be employed in the CT system to quantify the water, lipid, and protein mass densities in tissue with a relatively good agreement. PMID:22380361

  10. Comparison of biventricular ejection fractions using cadmium-zinc-telluride SPECT and planar equilibrium radionuclide angiography.

    PubMed

    Chen, Yi-Chieh; Ko, Chi-Lun; Yen, Rouh-Fang; Lo, Mei-Fang; Huang, Yih-Hwen; Hsu, Pei-Ying; Wu, Yen-Wen; Cheng, Mei-Fang

    2016-06-01

    We compared biventricular ejection fractions (EFs) from gated blood-pool single-photon emission computed tomography (SPECT) using a cadmium-zinc-telluride camera (CZT-SPECT) with planar equilibrium radionuclide angiography (ERNA) using a NaI gamma camera (NaI-planar). We also evaluated whether imaging time can be reduced without compromising image quality using the CZT camera. Forty-eight patients underwent NaI-planar and CZT-SPECT on the same day. CZT-SPECT datasets were re-projected at an LAO orientation similar to ERNA acquisition, forming CZT-repro planar datasets. The resulting biventricular volumetric measurements and EFs were compared. LVEF calculated from CZT-SPECT and CZT-repro correlated better with NaI-planar (r = 0.93 and 0.99, respectively) than RVEF (r = 0.76 and 0.82, respectively). Excellent intra-class correlation and low bias in intra-observer comparisons were observed for the biventricular EFs derived from three datasets. A wider limit of agreement in CZT-SPECT-derived LVEFs, lower correlation and significant bias for NaI-planar, and CZT-repro-derived RVEFs was found in the inter-observer analyses. Nonetheless, the imaging time can be reduced to 4 minutes without increasing variability in EFs using the CZT camera (P = NS). LVEFs calculated from CZT-SPECT and CZT-repro correlated well with NaI-planar. CZT camera may reduce imaging time while preserving image quality in the assessment of biventricular EFs.

  11. Evaluation of Fully 3-D Emission Mammotomography With a Compact Cadmium Zinc Telluride Detector

    PubMed Central

    Tornai, Martin P.; McKinley, Randolph L.; Bowsher, James E.

    2015-01-01

    A compact, dedicated cadmium zinc telluride (CZT) gamma camera coupled with a fully three-dimensional (3-D) acquisition system may serve as a secondary diagnostic tool for volumetric molecular imaging of breast cancers, particularly in cases when mammographic findings are inconclusive. The developed emission mammotomography system comprises a medium field-of-view, quantized CZT detector and 3-D positioning gantry. The intrinsic energy resolution, sensitivity and spatial resolution of the detector are evaluated with Tc-99m (140 keV) filled flood sources, capillary line sources, and a 3-D frequency-resolution phantom. To mimic realistic human pendant, uncompressed breast imaging, two different phantom shapes of an average sized breast, and three different lesion diameters are imaged to evaluate the system for 3-D mammotomography. Acquisition orbits not possible with conventional emission, or transmission, systems are designed to optimize the viewable breast volume while improving sampling of the breast and anterior chest wall. Complications in camera positioning about the patient necessitate a compromise in these two orbit design criteria. Image quality is evaluated with signal-to-noise ratios and contrasts of the lesions, both with and without additional torso phantom background. Reconstructed results indicate that 3-D mammotomography, incorporating a compact CZT detector, is a promising, dedicated breast imaging technique for visualization of tumors <1 cm in diameter. Additionally, there are no outstanding trajectories that consistently yield optimized quantitative lesion imaging parameters. Qualitatively, imaging breasts with realistic torso backgrounds (out-of-field activity) substantially alters image characteristics and breast morphology unless orbits which improve sampling are utilized. In practice, the sampling requirement may be less strict than initially anticipated. PMID:16011316

  12. Charge Loss and Charge Sharing Measurements for Two Different Pixelated Cadmium-Zinc-Telluride Detectors

    NASA Astrophysics Data System (ADS)

    Gaskin, J. A.; Sharma, D. P.; Ramsey, B. D.; Seller, P.

    2003-05-01

    As part of ongoing research at Marshall Space Flight Center, Cadmium-Zinc-Telluride (CdZnTe) multi-pixel detectors are being developed for use at the focal plane of the High Energy Replicated Optics (HERO) telescope. HERO requires a 64x64 pixel array with a spatial resolution of around 200 microns (with a 6 meter focal length) and high energy resolution (< 2% at 60keV). We are currently testing smaller arrays as a necessary first step towards this goal. In this presentation, we compare charge sharing and charge loss measurements between two devices that differ both electronically and geometrically. The first device consists of a 1-mm-thick piece of CdZnTe that is sputtered with a 4x4 array of pixels with pixel pitch of 750 microns (inter-pixel gap is 100 microns). The signal is read out using discrete ultra-low-noise preamplifiers, one for each of the 16 pixels. The second detector consists of a 2-mm-thick piece of CdZnTe that is sputtered with a 16x16 array of pixels with a pixel pitch of 300 microns (inter-pixel gap is 50 microns). Instead of using discrete preamplifiers, the crystal is bonded to an ASIC that provides all of the front-end electronics to each of the 256 pixels. Further, we compare the measured results with simulated results and discuss to what degree the bias voltage (i.e. the electric field) and hence the drift and diffusion coefficients affect our measurements.

  13. Photoluminescence study of copper-doped cadmium-telluride and related stability issues for cadmium-sulfide/cadmium-telluride solar-cell devices

    NASA Astrophysics Data System (ADS)

    Grecu, Dan S.

    Lifetime predictions for CdTe photovoltaic modules represent a complex problem, partly due to the fact that a fundamental understanding of the CdTe material properties and device operation is far from being complete. One of the stability issues actively investigated is the use of Cu for the formation of a back contact. Cu is one of the few good p-dopants for CdTe, which, by forming a p+ layer at the surface of the CdTe, relaxes the requirement for a high work function metal at the back contact. On the other hand, it is known that Cu is a fast diffuser in CdTe and it was suggested that Cu migration within the device could lead to some of the observed degradation effects. in this work, we explore Cu states and migration effects in CdTe and CdS/CdTe devices using photoluminescence (PL) as the main investigative method. We confirm the assignment of several Cu-related PL transitions observed in the CdTe spectrum, namely, a bound exciton transition (X, CUCd) at 1.59eV and a donor-acceptor pair (DAP) (D, CuCd) at 1.45eV. In addition, we observe and characterize new effects related to Cu diffusion in CdTe: (a) the quenching of a DAP, Cd-vacancy related band, at 1.55eV, and (b) the formation of a new strong lattice-coupled transition at 1.555eV. These effects, we suggest, are consistent with Cu atoms occupying substitutional positions on the Cd sublattice and/or forming Frenkel pairs of the type CUi-VCd- with Cd vacancies. Similar spectral characteristics are observed for the low-S-content CdS-CdTe alloy existent in the vicinity of the junction in solar-cell devices. Using Cu-induced changes in the PL spectrum, we propose that Cu diffuses rapidly through an interstitial mechanism, as a positively charged ion, throughout the CdTe and possibly the CdS layer during the back-contact fabrication procedure. Applied electrical fields can reverse the direction of Cu migration leading to device performance degradation. In addition, it was found that Cu-doped CdTe samples exhibit a

  14. Bulk Dissolution Rates of Cadmium and Bismuth Tellurides As a Function of pH, Temperature and Dissolved Oxygen.

    PubMed

    Biver, Marc; Filella, Montserrat

    2016-05-03

    The toxicity of Cd being well established and that of Te suspected, the bulk, surface-normalized steady-state dissolution rates of two industrially important binary tellurides-polycrystalline cadmium and bismuth tellurides- were studied over the pH range 3-11, at various temperatures (25-70 °C) and dissolved oxygen concentrations (0-100% O2 in the gas phase). The behavior of both tellurides is strikingly different. The dissolution rates of CdTe monotonically decreased with increasing pH, the trend becoming more pronounced with increasing temperature. Activation energies were of the order of magnitude associated with surface controlled processes; they decreased with decreasing acidity. At pH 7, the CdTe dissolution rate increased linearly with dissolved oxygen. In anoxic solution, CdTe dissolved at a finite rate. In contrast, the dissolution rate of Bi2Te3 passed through a minimum at pH 5.3. The activation energy had a maximum in the rate minimum at pH 5.3 and fell below the threshold for diffusion control at pH 11. No oxygen dependence was detected. Bi2Te3 dissolves much more slowly than CdTe; from one to more than 3.5 orders of magnitude in the Bi2Te3 rate minimum. Both will readily dissolve under long-term landfill deposition conditions but comparatively slowly.

  15. Electronic Characterization of Defects in Narrow Gap Semiconductors-Comparison of Electronic Energy Levels and Formation Energies in Mercury Cadmium Telluride, Mercury Zinc Telluride, and Mercury Zinc Selenide

    NASA Technical Reports Server (NTRS)

    Patterson, James D.

    1996-01-01

    We have used a Green's function technique to calculate the energy levels and formation energy of deep defects in the narrow gap semiconductors mercury cadmium telluride (MCT), mercury zinc telluride (MZT) and mercury zinc selenide (MZS). The formation energy is calculated from the difference between the total energy with an impurity cluster and the total energy for the perfect crystal. Substitutional (including antisite), interstitial (self and foreign), and vacancy deep defects are considered. Relaxation effects are calculated (with molecular dynamics). By use of a pseudopotential, we generalize the ideal vacancy model so as to be able to consider relaxation for vacancies. Different charge states are considered and the charged state energy shift (as computed by a modified Haldane-Anderson model) can be twice that due to relaxation. Different charged states for vacancies were not calculated to have much effect on the formation energy. For all cases we find deep defects in the energy gap only for cation site s-like orbitals or anion site p-like orbitals, and for the substitutional case only the latter are appreciably effected by relaxation. For most cases for MCT, MZT, MZS, we consider x (the concentration of Cd or Zn) in the range appropriate for a band gap of 0.1 eV. For defect energy levels, the absolute accuracy of our results is limited, but the precision is good, and hence chemical trends are accurately predicted. For the same reason, defect formation energies are more accurately predicted than energy level position. We attempt, in Appendix B, to calculate vacancy formation energies using relatively simple chemical bonding ideas due to Harrison. However, these results are only marginally accurate for estimating vacancy binding energies. Appendix C lists all written reports and publications produced for the grant. We include abstracts and a complete paper that summarizes our work which is not yet available.

  16. Microbial toxicity of ionic species leached from the II-VI semiconductor materials, cadmium telluride (CdTe) and cadmium selenide (CdSe).

    PubMed

    Ramos-Ruiz, Adriana; Zeng, Chao; Sierra-Alvarez, Reyes; Teixeira, Luiz H; Field, Jim A

    2016-11-01

    This work investigated the microbial toxicity of soluble species that can potentially be leached from the II-VI semiconductor materials, cadmium telluride and cadmium selenide. The soluble ions tested included: cadmium, selenite, selenate, tellurite, and tellurate. Their toxicity towards the acetoclastic and hydrogen-consuming trophic groups in a methanogenic consortium as well as towards a bioluminescent marine bacterium, Aliivibrio fischeri (Microtox(®) test), was assessed. The acetoclastic methanogenic activity was the most affected as evidenced by the low 50% inhibiting concentrations (IC50) values obtained of 8.6 mg L(-1) for both cadmium and tellurite, 10.2 mg L(-1) for tellurate, and 24.1 mg L(-1) for selenite. Both tellurium oxyanions caused a strong inhibition of acetoclastic methanogenesis at low concentrations, each additional increment in concentration provided progressively less inhibition increase. In the case of the hydrogenotrophic methanogenesis, cadmium followed by selenite caused the greatest inhibition with IC50 values of 2.9 and 18.0 mg L(-1), respectively. Tellurite caused a moderate effect as evidenced by a 36.8% inhibition of the methanogenic activity at the highest concentration tested, and a very mild effect of tellurate was observed. Microtox(®) analyses showed a noteworthy inhibition of cadmium, selenite, and tellurite with 50% loss in bioluminescence after 30 min of exposure of 5.5, 171.1, and 458.6 mg L(-1), respectively. These results suggest that the leaching of cadmium, tellurium and selenium ions from semiconductor materials can potentially cause microbial toxicity.

  17. Thermodynamics of post-growth annealing of cadmium zinc telluride nuclear radiation detectors

    NASA Astrophysics Data System (ADS)

    Adams, Aaron Lee

    Nuclear Radiation Detectors are used for detecting, tracking, and identifying radioactive materials which emit high-energy gamma and X-rays. The use of Cadmium Zinc Telluride (CdZnTe) detectors is particularly attractive because of the detector's ability to operate at room temperature and measure the energy spectra of gamma-ray sources with a high resolution, typically less than 1% at 662 keV. While CdZnTe detectors are acceptable imperfections in the crystals limit their full market potential. One of the major imperfections are Tellurium inclusions generated during the crystal growth process by the retrograde solubility of Tellurium and Tellurium-rich melt trapped at the growth interface. Tellurium inclusions trap charge carriers generated by gamma and X-ray photons and thus reduce the portion of generated charge carriers that reach the electrodes for collection and conversion into a readable signal which is representative of the ionizing radiation's energy and intensity. One approach in resolving this problem is post-growth annealing which has the potential of removing the Tellurium inclusions and associated impurities. The goal of this project is to use experimental techniques to study the thermodynamics of Tellurium inclusion migration in post-growth annealing of CdZnTe nuclear detectors with the temperature gradient zone migration (TGZM) technique. Systematic experiments will be carried out to provide adequate thermodynamic data that will inform the engineering community of the optimum annealing parameters. Additionally, multivariable correlations that involve the Tellurium diffusion coefficient, annealing parameters, and CdZnTe properties will be analyzed. The experimental approach will involve systematic annealing experiments (in Cd vapor overpressure) on different sizes of CdZnTe crystals at varying temperature gradients ranging from 0 to 60°C/mm (used to migrate the Tellurium inclusion to one side of the crystal), and at annealing temperatures ranging

  18. Mercury-cadmium-telluride waveguides--a novel strategy for on-chip mid-infrared sensors.

    PubMed

    Wang, Xiaofeng; Antoszewski, Jarek; Putrino, Gino; Lei, Wen; Faraone, Lorenzo; Mizaikoff, Boris

    2013-11-19

    We report the first planar waveguides made from mercury-cadmium-telluride (MCT)-a material to date exclusively used for mid-infrared (MIR) detector elements-serving as on-chip MIR evanescent field transducers in combination with tunable quantum cascade lasers (tQCLs) emitting in the spectral regime of 5.78-6.35 μm. This novel MIR sensing approach utilizes structured MCT chips fabricated via molecular beam epitaxy (MBE) as waveguide enabling sensing via evanescent field absorption spectroscopy, as demonstrated by the detection of 1 nL of acetone. Complementary finite difference time domain (FDTD) simulations fit well with the experimentally obtained data and predict an improvement of the limit of detection by at least 2 orders of magnitude upon implementation of thinner MCT waveguides. With the first demonstration of chemical sensing using on-chip MCT waveguides, monolithically fabricated IR sensing systems directly interfacing the waveguide with the MCT detector element may be envisaged.

  19. Analysis of the accelerated crucible rotation technique applied to the gradient freeze growth of cadmium zinc telluride

    NASA Astrophysics Data System (ADS)

    Divecha, Mia S.; Derby, Jeffrey J.

    2017-06-01

    We employ finite-element modeling to assess the effects of the accelerated crucible rotation technique (ACRT) on cadmium zinc telluride (CZT) crystals grown from a gradient freeze system. Via consideration of tellurium segregation and transport, we show, for the first time, that steady growth from a tellurium-rich melt produces persistent undercooling in front of the growth interface, likely leading to morphological instability. The application of ACRT rearranges melt flows and tellurium transport but, in contrast to conventional wisdom, does not altogether eliminate undercooling of the melt. Rather, a much more complicated picture arises, where spatio-temporal realignment of undercooled melt may act to locally suppress instability. A better understanding of these mechanisms and quantification of their overall effects will allow for future growth optimization.

  20. Size-dependent active effect of cadmium telluride quantum dots on luminol-potassium periodate chemiluminescence system for levodopa detection.

    PubMed

    Wang, Jianbo; Cui, Lijuan; Han, Suqin; Hao, Fang

    2015-06-01

    It was found that cadmium telluride (CdTe) quantum dots (QDs) with different sizes can have a great sensitizing effect on chemiluminescence (CL) emission from luminol-potassium periodate (KIO4) system. Levodopa, a widely prescribed drug in the treatment of Parkinson's disease, could inhibit luminol-KIO4-CdTe QDs CL reaction in alkaline solution. The inhibited CL intensity was proportional to the concentration of levodopa in the range from 8.0 nM to 10.0 μM. The detection limit was 3.8 nM. This method has been successfully applied to determine levodopa in pharmaceutical preparation and human urine and plasma samples with recoveries of 94.1-105.4%. This was the first work for inhibition effect determination of levodopa using a QD-based CL method.

  1. Monte Carlo and least-squares methods applied in unfolding of X-ray spectra measured with cadmium telluride detectors

    NASA Astrophysics Data System (ADS)

    Moralles, M.; Bonifácio, D. A. B.; Bottaro, M.; Pereira, M. A. G.

    2007-09-01

    Spectra of calibration sources and X-ray beams were measured with a cadmium telluride (CdTe) detector. The response function of the detector was simulated using the GEANT4 Monte Carlo toolkit. Trapping of charge carriers were taken into account using the Hecht equation in the active zone of the CdTe crystal associated with a continuous function to produce drop of charge collection efficiency near the metallic contacts and borders. The rise time discrimination is approximated by a cut in the depth of the interaction relative to cathode and corrections that depend on the pulse amplitude. The least-squares method with truncation was employed to unfold X-ray spectra typically used in medical diagnostics and the results were compared with reference data.

  2. A rapid and sensitive assay for determination of doxycycline using thioglycolic acid-capped cadmium telluride quantum dots.

    PubMed

    Tashkhourian, Javad; Absalan, Ghodratollah; Jafari, Marzieh; Zare, Saber

    2016-01-05

    A rapid, simple and inexpensive spectrofluorimetric sensor for determination of doxycycline based on its interaction with thioglycolic acid-capped cadmium telluride quantum dots (TGA/CdTe QDs) has been developed. Under the optimum experimental conditions, the sensor exhibited a fast response time of <10s. The results revealed that doxycycline could quench the fluorescence of TGA/CdTe QDs via electron transfer from the QDs to doxycycline through a dynamic quenching mechanism. The sensor permitted determination of doxycycline in a concentration range of 1.9×10(-6)-6.1×10(-5)molL(-1) with a detection limit of 1.1×10(-7)molL(-1). The sensor was applied for determination of doxycycline in honey and human serum samples.

  3. A rapid and sensitive assay for determination of doxycycline using thioglycolic acid-capped cadmium telluride quantum dots

    NASA Astrophysics Data System (ADS)

    Tashkhourian, Javad; Absalan, Ghodratollah; Jafari, Marzieh; Zare, Saber

    2016-01-01

    A rapid, simple and inexpensive spectrofluorimetric sensor for determination of doxycycline based on its interaction with thioglycolic acid-capped cadmium telluride quantum dots (TGA/CdTe QDs) has been developed. Under the optimum experimental conditions, the sensor exhibited a fast response time of <10 s. The results revealed that doxycycline could quench the fluorescence of TGA/CdTe QDs via electron transfer from the QDs to doxycycline through a dynamic quenching mechanism. The sensor permitted determination of doxycycline in a concentration range of 1.9 × 10-6-6.1 × 10-5 mol L-1 with a detection limit of 1.1 × 10-7 mol L-1. The sensor was applied for determination of doxycycline in honey and human serum samples.

  4. Understanding Growth Rate Limitations in Production of Single-Crystal Cadmium Zinc Telluride (CZT) by the Traveling Heater Method (THM)

    NASA Astrophysics Data System (ADS)

    Peterson, Jeffrey H.

    Cadmium telluride (CdTe) and cadmium zinc telluride (CZT) are important optoelectronic materials with applications ranging from medical imaging to nuclear materials monitoring. However, CZT and CdTe have long been plagued by second-phase particles, inhomogeneity, and other defects. The traveling heater method (THM) is a promising approach for growing CZT and other compound semiconductors that has been shown to grow detector-grade crystals. In contrast to traditional directional solidification, the THM consists of a moving melt zone that simultaneously dissolves a polycrystalline feed while producing a single-crystal of material. Additionally, the melt is highly enriched in tellurium, which allows for growth at lower temperatures, limiting the presence of precipitated tellurium second-phase particles in the final crystal. Unfortunately, the THM growth of CZT is limited to millimeters per day when other growth techniques can grow an order of magnitude faster. To understand these growth limits, we employ a mathematical model of the THM system that is formulated to realistically represent the interactions of heat and species transport, fluid flow, and interfacial dissolution and growth under conditions of local thermodynamic equilibrium and steady-state growth. We examine the complicated interactions among zone geometry, continuum transport, phase change, and fluid flow driven by buoyancy. Of particular interest and importance is the formation of flow structures in the liquid zone of the THM that arise from the same physical mechanism as lee waves in atmospheric flows and demonstrate the same characteristic Brunt-Vaisala scaling. We show that flow stagnation and reversal associated with lee-wave formation are responsible for the accumulation of tellurium and supercooled liquid near the growth interface, even when the lee-wave vortex is not readily apparent in the overall flow structure. The supercooled fluid is posited to result in morphological instability at growth

  5. Bulk growth and surface characterization of epitaxy ready cadmium zinc telluride substrates for use in IR imaging applications

    NASA Astrophysics Data System (ADS)

    Flint, J. P.; Martinez, B.; Betz, T. E. M.; MacKenzie, J.; Kumar, F. J.; Bindley, G.

    2016-05-01

    Cadmium Zinc Telluride (CZT) is an important compound semiconductor material upon which Mercury Cadmium Telluride (MCT) layers are deposited epitaxially to form structures that are used in high performance detectors covering a wide infrared (IR) spectral band. The epitaxial growth of high quality MCT layers presents many technical challenges and a critical determinant of material performance is the quality of the underlying bulk CZT substrate. CZT itself is a difficult material to manufacture where traditional methods of bulk growth are complex and low yielding, which constrains the supply of commercially available substrates. In this work we report on the epitaxy-ready finishing of Travelling Heather Method (THM) grown Cd0.96Zn0.04Te substrates. The THM method is well established for the growth of high quality CZT crystals used in nuclear, X-ray and spectroscopic imaging applications and in this work we demonstrate the application of this technique to the growth of IR specification CZT substrates with areas of up to 5 cm x 5 cm square. We will discuss the advantages of the THM method over alternative methods of bulk CZT growth where the high yield and material uniformity advantages of this technique will be demonstrated. Chemo-mechanical polishing (CMP) of 4 cm x 4 cm CZT substrates reveals that III-V (InSb/GaSb) like levels of epitaxy-ready surface finishing may be obtained with modified process chemistries. Surface quality assessments will be made by various surface analytical and microscopy techniques from which the suitability of the material for subsequent assessment of quality by epitaxial growth will be ascertained.

  6. Bulk growth and surface characterization of epitaxy ready cadmium zinc telluride substrates for use in IR imaging applications

    NASA Astrophysics Data System (ADS)

    Flint, J. P.; Martinez, B.; Betz, T. E. M.; Mackenzie, J.; Kumar, F. J.; Burgess, L.

    2017-02-01

    Cadmium Zinc Telluride (Cd1-xZnxTe or CZT) is a compound semiconductor substrate material that has been used for infrared detector (IR) applications for many years. CZT is a perfect substrate for the epitaxial growth of Mercury Cadmium Telluride (Hg1-xCdxTe or MCT) epitaxial layers and remains the material of choice for many high performance IR detectors and focal plane arrays that are used to detect across wide IR spectral bands. Critical to the fabrication of high performance MCT IR detectors is a high quality starting CZT substrate, this being a key determinant of epitaxial layer crystallinity, defectivity and ultimately device electro-optical performance. In this work we report on a new source of substrates suitable for IR detector applications, grown using the Travelling Heater Method (THM). This proven method of crystal growth has been used to manufacture high quality IR specification CZT substrates where industry requirements for IR transmission, dislocations, tellurium precipitates and copper impurity levels have been met. Results will be presented for the chemo-mechanical (CMP) polishing of CZT substrates using production tool sets that are identical to those that are used to produce epitaxy-ready surface finishes on related IR compound semiconductor materials such as GaSb and InSb. We will also discuss the requirements to scale CZT substrate manufacture and how with a new III-V like approach to both CZT crystal growth and substrate polishing, we can move towards a more standardized product and one that can ultimately deliver a standard round CZT substrate, as is the case for competing IR materials such as GaSb, InSb and InP.

  7. Scientific/Technical Report: Improvement in compensation and crystal growth of cadmium zinc telluride radiation detectors

    SciTech Connect

    Kelvin G. Lynn; Kelly A. Jones

    2007-05-19

    Comparison of actual accomplishments with goals and objectives: (1) Growth of 12 ingots--Washington State University (WSU) more than met this goal for the project by growing 12 final ingots for the year. Nine of the twelve crystal growth ingots resolved gamma radiation at room temperature. The other three ingots where resistivity of {approx} 3 x 10{sup 8} Ohm*cm for CG32a, CG36, and CG42 lower than expected, however none of these were tried with blocking contacts. All ingots were evaluated from tip to heel. In these three cases, the group III, dopant Aluminum (Al) was not detected to a level to compensate the Cd vacancies in the cadmium zinc telluride (CZT) thus the ingots were lower resistivity. The nine ingots that were successful radiation detectors averaged a bulk resistivity of 1.25 x 10{sup 10} Ohm*cm and with a average {mu}{tau} product for electrons of {approx} 2 x 10{sup -4} cm{sup 2}/V with a 1/4 microsecond shaping time with samples {approx}2 mm in thickness. (2) Attempt new compensations techniques--WSU also met this goal. Several doping schemes were attempted and investigated with various amounts of excess Tellurium added to the growth. The combination of Al and Erbium (Er) were first attempted for these ingots and subsequently CG34 was grown with Al, Er and Holmium. These compensation techniques produced radiation detectors and are currently under investigation. These growths were made with significant different doping levels to determine the affect of the dopants. CG43 was doped with Indium and Er. Indium was introduced instead of Al to determine if Indium is more soluble than Al for CZT and was less oxidized. This may decrease the amount of low resistivity ingots grown by doping with Indium instead of Al. (3) Grow large single crystals--Several changes in approach occurred in the crystal growth furnace. Steps were taken to maximize the crystal growth interface during growth by modifying liners, quartz, heat sinks, crucibles and various growth steps

  8. Crystal Growth, Characterization and Fabrication of Cadmium Zinc Telluride-based Nuclear Detectors

    NASA Astrophysics Data System (ADS)

    Krishna, Ramesh M.

    In today's world, nuclear radiation is seeing more and more use by humanity as time goes on. Nuclear power plants are being built to supply humanity's energy needs, nuclear medical imaging is becoming more popular for diagnosing cancer and other diseases, and control of weapons-grade nuclear materials is becoming more and more important for national security. All of these needs require high-performance nuclear radiation detectors which can accurately measure the type and amount of radiation being used. However, most current radiation detection materials available commercially require extensive cooling, or simply do not function adequately for high-energy gamma-ray emitting nuclear materials such as uranium and plutonium. One of the most promising semiconductor materials being considered to create a convenient, field-deployable nuclear detector is cadmium zinc telluride (CdZnTe, or CZT). CZT is a ternary semiconductor compound which can detect high-energy gamma-rays at room temperature. It offers high resistivity (≥ 1010 O-cm), a high band gap (1.55 eV), and good electron transport properties, all of which are required for a nuclear radiation detector. However, one significant issue with CZT is that there is considerable difficulty in growing large, homogeneous, defect-free single crystals of CZT. This significantly increases the cost of producing CZT detectors, making CZT less than ideal for mass-production. Furthermore, CZT suffers from poor hole transport properties, which creates significant problems when using it as a high-energy gamma-ray detector. In this dissertation, a comprehensive investigation is undertaken using a successful growth method for CZT developed at the University of South Carolina. This method, called the solvent-growth technique, reduces the complexity required to grow detector-grade CZT single crystals. It utilizes a lower growth temperature than traditional growth methods by using Te as a solvent, while maintaining the advantages of

  9. Photovoltaic properties of cadmium selenide-titanyl phthalocyanine planar heterojunction devices

    NASA Astrophysics Data System (ADS)

    Szostak, J.; Jarosz, G.; Signerski, R.

    2015-07-01

    Photovoltaic phenomenon taking place in cadmium selenide (CdSe)/titanyl phthalocyanine (TiOPc) planar heterojunction devices is described. Mechanisms of free charge carrier generation and their recombination in the dark and under illumination are analyzed, chosen photovoltaic parameters are presented.

  10. Long-term leaching of photovoltaic modules

    NASA Astrophysics Data System (ADS)

    Nover, Jessica; Zapf-Gottwick, Renate; Feifel, Carolin; Koch, Michael; Metzger, Jörg W.; Werner, Jürgen H.

    2017-08-01

    Some photovoltaic module technologies use toxic materials. We report long-term leaching on photovoltaic module pieces of 5 × 5 cm2 size. The pieces are cut out from modules of the four major commercial photovoltaic technologies: crystalline and amorphous silicon, cadmium telluride as well as from copper indium gallium diselenide. To simulate different environmental conditions, leaching occurs at room temperature in three different water-based solutions with pH 3, 7, and 11. No agitation is performed to simulate more representative field conditions. After 360 days, about 1.4% of lead from crystalline silicon module pieces and 62% of cadmium from cadmium telluride module pieces are leached out in acidic solutions. The leaching depends heavily on the pH and the redox potential of the aqueous solutions and it increases with time. The leaching behavior is predictable by thermodynamic stability considerations. These predictions are in good agreement with the experimental results.

  11. Conventional X-ray fluorescence camera with a cadmium-telluride detector and its application to cancer diagnosis

    NASA Astrophysics Data System (ADS)

    Enomoto, Toshiyuki; Sato, Eiichi; Abderyim, Purkhet; Abudurexiti, Abulajiang; Hagiwara, Osahiko; Matsukiyo, Hiroshi; Osawa, Akihiro; Watanabe, Manabu; Nagao, Jiro; Sato, Shigehiro; Ogawa, Akira; Onagawa, Jun

    2011-04-01

    X-ray fluorescence (XRF) analysis is useful for mapping various molecules in objects. Bremsstrahlung X-rays are selected using a 3.0-mm-thick aluminum filter, and these rays are absorbed by iodine, cerium, and gadolinium molecules in objects. Next, XRF is produced from the objects, and photons are detected by a cadmium-telluride detector. The Kα photons are discriminated using a multichannel analyzer, and the number of photons is counted by a counter card. The objects are moved and scanned by an x- y stage in conjunction with a two-stage controller, and X-ray images obtained by molecular mapping are shown on a personal computer monitor. The scan steps of x and y axes were both 2.5 mm, and the photon-counting time per mapping point was 0.5 s. We carried out molecular mapping using the X-ray camera, and Kα photons from cerium and gadolinium molecules were produced from cancerous regions in nude mice.

  12. A novel approach of chemical mechanical polishing using environment-friendly slurry for mercury cadmium telluride semiconductors

    NASA Astrophysics Data System (ADS)

    Zhang, Zhenyu; Wang, Bo; Zhou, Ping; Guo, Dongming; Kang, Renke; Zhang, Bi

    2016-03-01

    A novel approach of chemical mechanical polishing (CMP) is developed for mercury cadmium telluride (HgCdTe or MCT) semiconductors. Firstly, fixed-abrasive lapping is used to machine the MCT wafers, and the lapping solution is deionized water. Secondly, the MCT wafers are polished using the developed CMP slurry. The CMP slurry consists of mainly SiO2 nanospheres, H2O2, and malic and citric acids, which are different from previous CMP slurries, in which corrosive and toxic chemical reagents are usually employed. Finally, the polished MCT wafers are cleaned and dried by deionized water and compressed air, respectively. The novel approach of CMP is environment-friendly. Surface roughness Ra, and peak-to-valley (PV) values of 0.45, and 4.74 nm are achieved, respectively on MCT wafers after CMP. The first and second passivating processes are observed in electrochemical measurements on MCT wafers. The fundamental mechanisms of CMP are proposed according to the X-ray photoelectron spectroscopy (XPS) and electrochemical measurements. Malic and citric acids dominate the first passivating process, and the CMP slurry governs the second process. Te4+3d peaks are absent after CMP induced by the developed CMP slurry, indicating the removing of oxidized films on MCT wafers, which is difficult to achieve using single H2O2 and malic and citric acids solutions.

  13. A novel approach of chemical mechanical polishing using environment-friendly slurry for mercury cadmium telluride semiconductors.

    PubMed

    Zhang, Zhenyu; Wang, Bo; Zhou, Ping; Guo, Dongming; Kang, Renke; Zhang, Bi

    2016-03-01

    A novel approach of chemical mechanical polishing (CMP) is developed for mercury cadmium telluride (HgCdTe or MCT) semiconductors. Firstly, fixed-abrasive lapping is used to machine the MCT wafers, and the lapping solution is deionized water. Secondly, the MCT wafers are polished using the developed CMP slurry. The CMP slurry consists of mainly SiO2 nanospheres, H2O2, and malic and citric acids, which are different from previous CMP slurries, in which corrosive and toxic chemical reagents are usually employed. Finally, the polished MCT wafers are cleaned and dried by deionized water and compressed air, respectively. The novel approach of CMP is environment-friendly. Surface roughness Ra, and peak-to-valley (PV) values of 0.45, and 4.74 nm are achieved, respectively on MCT wafers after CMP. The first and second passivating processes are observed in electrochemical measurements on MCT wafers. The fundamental mechanisms of CMP are proposed according to the X-ray photoelectron spectroscopy (XPS) and electrochemical measurements. Malic and citric acids dominate the first passivating process, and the CMP slurry governs the second process. Te(4+)3d peaks are absent after CMP induced by the developed CMP slurry, indicating the removing of oxidized films on MCT wafers, which is difficult to achieve using single H2O2 and malic and citric acids solutions.

  14. Liver Toxicity of Cadmium Telluride Quantum Dots (CdTe QDs) Due to Oxidative Stress in Vitro and in Vivo

    PubMed Central

    Zhang, Ting; Hu, Yuanyuan; Tang, Meng; Kong, Lu; Ying, Jiali; Wu, Tianshu; Xue, Yuying; Pu, Yuepu

    2015-01-01

    With the applications of quantum dots (QDs) expanding, many studies have described the potential adverse effects of QDs, yet little attention has been paid to potential toxicity of QDs in the liver. The aim of this study was to investigate the effects of cadmium telluride (CdTe) QDs in mice and murine hepatoma cells alpha mouse liver 12 (AML 12). CdTe QDs administration significantly increased the level of lipid peroxides marker malondialdehyde (MDA) in the livers of treated mice. Furthermore, CdTe QDs caused cytotoxicity in AML 12 cells in a dose- and time-dependent manner, which was likely mediated through the generation of reactive oxygen species (ROS) and the induction of apoptosis. An increase in ROS generation with a concomitant increase in the gene expression of the tumor suppressor gene p53, the pro-apoptotic gene Bcl-2 and a decrease in the anti-apoptosis gene Bax, suggested that a mitochondria mediated pathway was involved in CdTe QDs’ induced apoptosis. Finally, we showed that NF-E2-related factor 2 (Nrf2) deficiency blocked induced oxidative stress to protect cells from injury induced by CdTe QDs. These findings provide insights into the regulatory mechanisms involved in the activation of Nrf2 signaling that confers protection against CdTe QDs-induced apoptosis in hepatocytes. PMID:26404244

  15. A novel approach of chemical mechanical polishing using environment-friendly slurry for mercury cadmium telluride semiconductors

    PubMed Central

    Zhang, Zhenyu; Wang, Bo; Zhou, Ping; Guo, Dongming; Kang, Renke; Zhang, Bi

    2016-01-01

    A novel approach of chemical mechanical polishing (CMP) is developed for mercury cadmium telluride (HgCdTe or MCT) semiconductors. Firstly, fixed-abrasive lapping is used to machine the MCT wafers, and the lapping solution is deionized water. Secondly, the MCT wafers are polished using the developed CMP slurry. The CMP slurry consists of mainly SiO2 nanospheres, H2O2, and malic and citric acids, which are different from previous CMP slurries, in which corrosive and toxic chemical reagents are usually employed. Finally, the polished MCT wafers are cleaned and dried by deionized water and compressed air, respectively. The novel approach of CMP is environment-friendly. Surface roughness Ra, and peak-to-valley (PV) values of 0.45, and 4.74 nm are achieved, respectively on MCT wafers after CMP. The first and second passivating processes are observed in electrochemical measurements on MCT wafers. The fundamental mechanisms of CMP are proposed according to the X-ray photoelectron spectroscopy (XPS) and electrochemical measurements. Malic and citric acids dominate the first passivating process, and the CMP slurry governs the second process. Te4+3d peaks are absent after CMP induced by the developed CMP slurry, indicating the removing of oxidized films on MCT wafers, which is difficult to achieve using single H2O2 and malic and citric acids solutions. PMID:26926622

  16. D-penicillamine capped cadmium telluride quantum dots as a novel fluorometric sensor of copper(II).

    PubMed

    Mohammad-Rezaei, Rahim; Razmi, Habib; Abdolmohammad-Zadeh, Hossein

    2013-01-01

    D-penicillamine-capped cadmium telluride quantum dots (DPA-capped CdTe QDs) were synthesized as the new fluorescent semiconductor nanocrystal in aqueous solution. Fourier transmission infrared spectroscopy, X-ray diffraction, transmission electron microscopy, ultraviolet-visible and photoluminescence spectroscopy were used for characterization of the QDs. Based on the quenching effect of Cu(2+) ions on the fluorescence intensity of DPA-capped CdTe QDs, a new fluorometric sensor for copper(II) detection was developed that showed good linearity over the concentration range 5 × 10(-9)-3 × 10(-6) M with the detection limit 0.4 × 10(-9) M. Owing to the strong affinity of the DPA to copper(II), the sensor showed appropriate selectivity for copper(II) compared with conventional QDs. The DPA-capped CdTe QDs was successfully applied for determination of Cu(2+) concentration in river, well and tap waters with satisfactory results.

  17. The 3-5 semiconductor solid solution single crystal growth. [low gravity float zone growth experiments using gallium indium antimonides and cadmium tellurides

    NASA Technical Reports Server (NTRS)

    Gertner, E. R.

    1980-01-01

    Techniques used for liquid and vapor phase epitaxy of gallium indium arsenide are described and the difficulties encountered are examined. Results show that the growth of bulk III-V solid solution single crystals in a low gravity environment will not have a major technological impact. The float zone technique in a low gravity environment is demonstrated using cadmium telluride. It is shown that this approach can result in the synthesis of a class of semiconductors that can not be grown in normal gravity because of growth problems rooted in the nature of their phase diagrams.

  18. Evaluation of left ventricular diastolic function with a dedicated cadmium-zinc-telluride cardiac camera: comparison with Doppler echocardiography.

    PubMed

    Gimelli, Alessia; Liga, Riccardo; Pasanisi, Emilio Maria; Giorgetti, Assuero; Marras, Gavino; Favilli, Brunella; Marzullo, Paolo

    2014-09-01

    To evaluate the relationships between measures of left ventricular (LV) filling dynamics at cadmium-zinc-telluride (CZT) imaging and indexes of LV diastolic function at transthoracic echocardiography. Two hundred and forty-seven patients underwent myocardial perfusion imaging at rest and after stress with a low-dose CZT protocol and a baseline transthoracic echocardiography study. All patients were submitted to invasive or computed coronary angiography. The peak filling rate (PFR) and the time to PFR (TPFR) were derived from gated CZT images as measures of LV filling dynamics. LV diastolic function was also evaluated at echocardiography and the presence of significantly increased LV filling pressures determined. Increased LV filling pressures at transthoracic echocardiography were evident in 103 (42%) patients. Interestingly, independently from the presence of coronary artery disease, there was a strict correlation between the presence and severity of LV diastolic dysfunction at echocardiography and CZT-derived measures of filling dynamics, i.e., PFR (P = 0.001) and TPFR (P = 0.001). At receiving operating characteristic analysis, a composite index of reduced PFR (≤2.11 end-diastolic volume s(-1)) and increased TPFR (>234 ms) showed a sensitivity of 84% and a specificity of 67% in unmasking the presence of elevated LV filling pressures at echocardiography. CZT-derived measures of LV filling dynamics correlate with echocardiographic parameters of diastolic function and may identify the presence of increased LV filling pressures. Published on behalf of the European Society of Cardiology. All rights reserved. © The Author 2014. For permissions please email: journals.permissions@oup.com.

  19. Leaching of cadmium and tellurium from cadmium telluride (CdTe) thin-film solar panels under simulated landfill conditions

    PubMed Central

    Ramos-Ruiz, Adriana; Wilkening, Jean V.; Field, James A.; Sierra-Alvarez, Reyes

    2017-01-01

    A crushed non-encapsulated CdTe thin-film solar cell was subjected to two standardized batch leaching tests (i.e., Toxicity Characteristic Leaching Procedure (TCLP) and California Waste Extraction Test (WET)) and to a continuous-flow column test to assess cadmium (Cd) and tellurium (Te) dissolution under conditions simulating the acidic- and the methanogenic phases of municipal solid waste landfills. Low levels of Cd and Te were solubilized in both batch leaching tests (<8.2% and <3.6% of added Cd and Te, respectively). On the other hand, over the course of 30 days, 73% of the Cd and 21% of the Te were released to the synthetic leachate of a continuous-flow column simulating the acidic landfill phase. The dissolved Cd concentration was 3.24-fold higher than the TCLP limit (1 mg L-1), and 650-fold higher than the maximum contaminant level established by the US-EPA for this metal in drinking water (0.005 mg L-1). In contrast, the release of Cd and Te to the effluent of the continuous-flow column simulating the methanogenic phase of a landfill was negligible. The remarkable difference in the leaching behavior of CdTe in the columns is related to different aqueous pH and redox conditions promoted by the microbial communities in the columns, and is in agreement with thermodynamic predictions. PMID:28472709

  20. Leaching of cadmium and tellurium from cadmium telluride (CdTe) thin-film solar panels under simulated landfill conditions.

    PubMed

    Ramos-Ruiz, Adriana; Wilkening, Jean V; Field, James A; Sierra-Alvarez, Reyes

    2017-08-15

    A crushed non-encapsulated CdTe thin-film solar cell was subjected to two standardized batch leaching tests (i.e., Toxicity Characteristic Leaching Procedure (TCLP) and California Waste Extraction Test (WET)) and to a continuous-flow column test to assess cadmium (Cd) and tellurium (Te) dissolution under conditions simulating the acidic- and the methanogenic phases of municipal solid waste landfills. Low levels of Cd and Te were solubilized in both batch leaching tests (<8.2% and <3.6% of added Cd and Te, respectively). On the other hand, over the course of 30days, 73% of the Cd and 21% of the Te were released to the synthetic leachate of a continuous-flow column simulating the acidic landfill phase. The dissolved Cd concentration was 3.24-fold higher than the TCLP limit (1mgL(-1)), and 650-fold higher than the maximum contaminant level established by the US-EPA for this metal in drinking water (0.005mgL(-1)). In contrast, the release of Cd and Te to the effluent of the continuous-flow column simulating the methanogenic phase of a landfill was negligible. The remarkable difference in the leaching behavior of CdTe in the columns is related to different aqueous pH and redox conditions promoted by the microbial communities in the columns, and is in agreement with thermodynamic predictions. Copyright © 2017 Elsevier B.V. All rights reserved.

  1. Development of Polyaniline Using Electrochemical Technique for Plugging Pinholes in Cadmium Sulfide/Cadmium Telluride Solar Cells

    NASA Astrophysics Data System (ADS)

    Abdul-Manaf, N. A.; Echendu, O. K.; Fauzi, F.; Bowen, L.; Dharmadasa, I. M.

    2014-11-01

    Polyaniline (PAni) thin films were prepared by using an electrochemical polymerization technique on glass/FTO substrates by varying the deposition potential, deposition time, pH concentrations and heat treatment conditions. The structural, morphological, optical and electrical properties of electrodeposited PAni films were characterized using x-ray diffraction, scanning electron microscopy, UV-VIS spectroscopy, optical profilometry and D.C. conductivity measurements. Structural analysis shows the formation of the highest crystallinity for PAni thin film grown at V g 1654 mV. Optical absorption measurements have demonstrated a wide variety of energy band gaps ( E g), varying from ˜0.50 eV to 2.40 eV for PAni grown by tuning the pH value during the deposition. The electrical resistivity showed an increase from 0.37 × 106 Ω cm to 3.91 × 106 Ω cm when the pH increased from 2.00 to 6.50. The diode structures of glass/FTO/CdS/CdTe/PAni/Au were fabricated incorporating PAni as a pinhole plugging layer, and assessed for their photovoltaic activities. The results showed the enhancement of all device parameters, especially of open circuit voltage and fill factors. This improvement offers a great potential for enhancing solar cell performance and the device lifetime, and the latest results are presented in this paper.

  2. Polycrystalline thin film photovoltaic technology

    SciTech Connect

    Ullal, H.S.; Zweibel, K.; Mitchell, R.L.; Noufi, R.

    1991-03-01

    Low-cost, high-efficiency thin-film modules are an exciting photovoltaic technology option for generating cost-effective electricity in 1995 and beyond. In this paper we review the significant technical progress made in the following thin films: copper indium diselenide, cadmium telluride, and polycrystalline thin silicon films. Also, the recent US DOE/SERI initiative to commercialize these emerging technologies is discussed. 6 refs., 9 figs.

  3. Influence of proton-pump inhibitors on stomach wall uptake of 99mTc-tetrofosmin in cadmium-zinc-telluride SPECT myocardial perfusion imaging.

    PubMed

    Mouden, Mohamed; Rijkee, Karlijn S; Schreuder, Nanno; Timmer, Jorik R; Jager, Pieter L

    2015-02-01

    Proton-pump inhibitors (PPIs) induce potentially interfering stomach wall activity in single-photon emission computed tomography myocardial perfusion imaging (SPECT-MPI) with technetium-99m ((99m)Tc)-sestamibi. However, no data are available for (99m)Tc-tetrofosmin. We assessed the influence of prolonged (>2 weeks) PPI use on the stomach wall uptake of (99m)Tc-tetrofosmin in patients referred for stress MPI with a cadmium-zinc-telluride-based SPECT camera and its relation with dyspepsia symptoms. Consecutive patients (n=127) underwent a 1-day adenosine stress-first SPECT-MPI with (99m)Tc-tetrofosmin, of whom 54 (43%) patients had been on PPIs for more than 2 weeks. Stomach wall activity was identified on stress SPECT using computed tomographic attenuation maps and was scored using a four-point grading scale into clinically relevant (scores 2 or 3) or nonrelevant (scores 0 or 1).Patients on PPIs had stomach wall uptake more frequently as compared with patients not using PPIs (22 vs. 7%, P=0.017). Dyspepsia was similar in both groups. Prolonged use of PPIs is associated with stomach wall uptake of (99m)Tc-tetrofosmin in stress cadmium-zinc-telluride-SPECT images. Gastric symptoms were not associated with stomach wall uptake.

  4. High efficiency cadmium and zinc telluride-based thin film solar cells

    SciTech Connect

    Rohatgi, A.; Summers, C.J.; Erbil, A.; Sudharsanan, R.; Ringel, S. . School of Electrical Engineering)

    1990-10-01

    Polycrystalline Cd{sub 1-x}Zn{sub x}Te and Cd{sub 1-x}Mn{sub x}Te films with a band gap of 1.7 eV were successfully grown on glass/SnO{sub 2}/CdS substrates by molecular beam epitaxy (MBE) and metal-organic chemical vapor deposition (MOCVD), respectively. Polycrystalline Cd{sub 1-x}Zn{sub x}Te films grown by MBE resulted in uniform composition and sharp interfaces. However, polycrystalline Cd{sub 1-x}Mn{sub x}Te films grown by MOCVD showed nonuniform compositions and evidence of manganese accumulation at the Cd{sub 1-x}Mn{sub x}Te/CdS interface. We found that manganese interdiffuses and replaces cadmium in the CdS film. By improving the CdTe/CdS interface and, thus, reducing the collection function effects, the efficiency of the MOCVD CdTe cell can be improved to about 13.5%. MBE-grown CdTe cells also produced 8%--9% efficiencies. The standard CdTe process was not optimum for ternary films and resulted in a decrease in the band gap. Recent results indicate that CdCl{sub 2} + ZnCl{sub 2} chemical treatment may prevent the band-gap reduction, and that chromate etch (rather than bromine etch) may provide the solution to contact resistance in the ternary cells.

  5. Effects of contact-based non-uniformities in cadmium sulfide/cadmium telluride thin-film solar cells

    NASA Astrophysics Data System (ADS)

    Davies, Alan R.

    To strongly contribute to the near-term electricity supply, CdTe-based photovoltaic devices must continue to improve in performance under the constraint of simple and cost efficient fabrication methods. This dissertation focuses on characterization and modeling of devices with non-uniform performance induced by the cell contacts. Devices were obtained from a commercially viable pilot-scale fabrication system at Colorado State University. Current versus voltage (J-V), quantum efficiency (QE) and laser-beam-induced current (LBIC) were the main characterization techniques applied in this work. The p-type CdTe semiconductor has a large work-function and thus tends to form a Schottky barrier when the back-electrode is formed. A common strategy of mitigating the performance-limiting contact barrier is to prepare the CdTe surface with a chemical etch, and include Cu to reduce the effective barrier. Non-uniformity of the etch or Cu inclusion, or insufficient application of Cu can result in a non-uniform contact, with regions of high- and low-energy Schottky barriers participating in the cell performance. Barrier non-uniformities in devices with little or no Cu were identified with the LBIC measurement and a model for their influence was developed and tested using PSpice circuit modeling software. Because of their superstrate configuration, CdTe cells feature front contacts made from transparent-conducting oxides (TCOs). Fluorine-doped tin oxide (F:SnO2) is a common choice because of its availability and acceptable optical and electrical properties. When the n-CdS layer of the CdS/CdTe structure is thinned to encourage greater current generation, non-uniformities of the solar cell junction arise, as CdTe comes into sporadic contact with the TCO layer. Device simulations suggest that the SnO2/CdTe junction is weaker than CdS/CdTe because of a large conduction-band offset induced by the differing electron affinities in the heterojunction. LBIC was used to verify increasing

  6. Intense pulsed light treatment of cadmium telluride nanoparticle-based thin films.

    PubMed

    Dharmadasa, Ruvini; Lavery, Brandon; Dharmadasa, I M; Druffel, Thad

    2014-04-09

    The search for low-cost growth techniques and processing methods for semiconductor thin films continues to be a growing area of research; particularly in photovoltaics. In this study, electrochemical deposition was used to grow CdTe nanoparticulate based thin films on conducting glass substrates. After material characterization, the films were thermally sintered using a rapid thermal annealing technique called intense pulsed light (IPL). IPL is an ultrafast technique which can reduce thermal processing times down to a few minutes, thereby cutting production times and increasing throughput. The pulses of light create localized heating lasting less than 1 ms, allowing films to be processed under atmospheric conditions, avoiding the need for inert or vacuum environments. For the first time, we report the use of IPL treatment on CdTe thin films. X-ray diffraction (XRD), optical absorption spectroscopy (UV-Vis), scanning electron microscopy (SEM) and room temperature photoluminescence (PL) were used to study the effects of the IPL processing parameters on the CdTe films. The results found that optimum recrystallization and a decrease in defects occurred when pulses of light with an energy density of 21.6 J cm(-2) were applied. SEM images also show a unique feature of IPL treatment: the formation of a continuous melted layer of CdTe, removing holes and voids from a nanoparticle-based thin film.

  7. Effect of Gallium Doping on the Characteristic Properties of Polycrystalline Cadmium Telluride Thin Film

    NASA Astrophysics Data System (ADS)

    Ojo, A. A.; Dharmadasa, I. M.

    2017-08-01

    Ga-doped CdTe polycrystalline thin films were successfully electrodeposited on glass/fluorine doped tin oxide substrates from aqueous electrolytes containing cadmium nitrate (Cd(NO3)2·4H2O) and tellurium oxide (TeO2). The effects of different Ga-doping concentrations on the CdTe:Ga coupled with different post-growth treatments were studied by analysing the structural, optical, morphological and electronic properties of the deposited layers using x-ray diffraction (XRD), ultraviolet-visible spectrophotometry, scanning electron microscopy, photoelectrochemical cell measurement and direct-current conductivity test respectively. XRD results show diminishing (111)C CdTe peak above 20 ppm Ga-doping and the appearance of (301)M GaTe diffraction above 50 ppm Ga-doping indicating the formation of two phases; CdTe and GaTe. Although, reductions in the absorption edge slopes were observed above 20 ppm Ga-doping for the as-deposited CdTe:Ga layer, no obvious influence on the energy gap of CdTe films with Ga-doping were detected. Morphologically, reductions in grain size were observed at 50 ppm Ga-doping and above with high pinhole density within the layer. For the as-deposited CdTe:Ga layers, conduction type change from n- to p- were observed at 50 ppm, while the n-type conductivity were retained after post-growth treatment. Highest conductivity was observed at 20 ppm Ga-doping of CdTe. These results are systematically reported in this paper.

  8. Photoluminescence and extended X-ray absorption fine structure studies on cadmium telluride material

    NASA Astrophysics Data System (ADS)

    Liu, Xiangxin

    The direct-band-gap semiconductor CdTe is an important material for fabricating high efficiency, polycrystalline thin-film solar cells in a heterojunction configuration. The outstanding physical properties of this material such as its good band-gap match to the solar spectrum, ease of fabrication of stoichiometric films, and easy grain boundary passivation make it an important candidate for large area, thin-film solar cells. However, there are several poorly understood processing steps that are commonly utilized in cell fabrication. One of these is a CdCl2 treatment near 400°C in the presence of oxygen, which can improve the cell efficiency a factor of two or more. Another factor is the role of copper in cell performance. In high performance CdS/CdTe thin-film solar cells, copper is usually included in the fabrication of low-resistance back contacts to obtain heavy p-type doping of the absorber CdTe at the contact. However, most of the copper is not electrically active. For example, secondary ion mass spectroscopy (SIMS) on typical CdTe cells has shown Cu concentrations of 1019 atoms/cm3 and even higher, although capacitance-voltage (C-V) measurements indicate typical ionized acceptor levels on the order of 1014/cm 3. Thus, there is great interest in the location and role of this inactive copper in CdTe photovoltaic (PV) devices. In this thesis, I will describe results obtained on magnetron-sputtered CdTe films that were diffused with copper following the procedure used for creating a cell back contact. Extended X-ray Absorption Fine Structure (EXAFS) measurements identified the chemical environment of the majority of the copper and show major differences depending on whether the CdTe film has been treated with chloride prior to the Cu diffusion. The EXAFS data indicate that the Cu chemistry is strongly affected by the chloride treatments---predominantly Cu2Te when Cu was diffused into the as-deposited CdTe film, but a Cu2O environment when Cu was diffused after

  9. Drift Mobility Measurements and Electrical Characterization in Thin Film Cadmium Telluride Solar Cells

    NASA Astrophysics Data System (ADS)

    Long, Qi

    Thin film CdTe solar cells are leading the production in the thin film photovoltaic industry for the recent few years. The electric properties and mechanism for fabrication of high efficiency solar cells are still not well established. In this thesis, I'll report electron and hole drift mobilities measurements in thin film CdTe solar cells based on two characterization methods: time-of-flight and photocapacitance. For a deposition process similar to that used for high-efficiency cells, the electron drift mobilities are in the range 10-1 -- 100 cm2/Vs, and holes are in the range 100 -- 101 cm2/Vs. The electron drift mobilities are three orders of magnitude smaller than those measured in single crystal CdTe, the hole mobilities are about ten times smaller. Cells were examined before and after a vapor phase treatment with CdCl2; treatment had little effect on the hole drift mobility, but decreased the electron mobility. The electron mobility shows an interesting inverse correlation with the open-circuit voltage for the CdTe coupons with and without the CdCl2 treatment. We speculate that this correlation is due to the diffusion limited recombination. We also discuss the mechanisms reducing the mobilities from the single crystal values. In this thesis, we are able to exclude bandtail trapping and dispersion as a mechanism for the small drift mobilities in thin film CdTe. Other mechanisms like classic scattering, grain boundaries effect, and also polaron interaction will also be discussed in this thesis. All mechanisms mentioned above show little evidence on the influence to the mobility value. The true reason for such a huge change of the drift mobility from its single crystal values still need more interpretations.

  10. Design study of a high-resolution breast-dedicated PET system built from cadmium zinc telluride detectors

    PubMed Central

    Peng, Hao; Levin, Craig S

    2013-01-01

    We studied the performance of a dual-panel positron emission tomography (PET) camera dedicated to breast cancer imaging using Monte Carlo simulation. The proposed system consists of two 4 cm thick 12 × 15 cm2 area cadmium zinc telluride (CZT) panels with adjustable separation, which can be put in close proximity to the breast and/or axillary nodes. Unique characteristics distinguishing the proposed system from previous efforts in breast-dedicated PET instrumentation are the deployment of CZT detectors with superior spatial and energy resolution, using a cross-strip electrode readout scheme to enable 3D positioning of individual photon interaction coordinates in the CZT, which includes directly measured photon depth-of-interaction (DOI), and arranging the detector slabs edge-on with respect to incoming 511 keV photons for high photon sensitivity. The simulation results show that the proposed CZT dual-panel PET system is able to achieve superior performance in terms of photon sensitivity, noise equivalent count rate, spatial resolution and lesion visualization. The proposed system is expected to achieve ~32% photon sensitivity for a point source at the center and a 4 cm panel separation. For a simplified breast phantom adjacent to heart and torso compartments, the peak noise equivalent count (NEC) rate is predicted to be ~94.2 kcts s−1 (breast volume: 720 cm3 and activity concentration: 3.7 kBq cm−3) for a ~10% energy window around 511 keV and ~8 ns coincidence time window. The system achieves 1 mm intrinsic spatial resolution anywhere between the two panels with a 4 cm panel separation if the detectors have DOI resolution less than 2 mm. For a 3 mm DOI resolution, the system exhibits excellent sphere resolution uniformity (σrms/mean) ≤ 10%) across a 4 cm width FOV. Simulation results indicate that the system exhibits superior hot sphere visualization and is expected to visualize 2 mm diameter spheres with a 5:1 activity concentration ratio within roughly 7

  11. Investigating the effect of characteristic x-rays in cadmium zinc telluride detectors under breast computerized tomography operating conditions.

    PubMed

    Glick, Stephen J; Didier, Clay

    2013-10-14

    A number of research groups have been investigating the use of dedicated breast computerized tomography (CT). Preliminary results have been encouraging, suggesting an improved visualization of masses on breast CT as compared to conventional mammography. Nonetheless, there are many challenges to overcome before breast CT can become a routine clinical reality. One potential improvement over current breast CT prototypes would be the use of photon counting detectors with cadmium zinc telluride (CZT) (or CdTe) semiconductor material. These detectors can operate at room temperature and provide high detection efficiency and the capability of multi-energy imaging; however, one factor in particular that limits image quality is the emission of characteristic x-rays. In this study, the degradative effects of characteristic x-rays are examined when using a CZT detector under breast CT operating conditions. Monte Carlo simulation software was used to evaluate the effect of characteristic x-rays and the detector element size on spatial and spectral resolution for a CZT detector used under breast CT operating conditions. In particular, lower kVp spectra and thinner CZT thicknesses were studied than that typically used with CZT based conventional CT detectors. In addition, the effect of characteristic x-rays on the accuracy of material decomposition in spectral CT imaging was explored. It was observed that when imaging with 50-60 kVp spectra, the x-ray transmission through CZT was very low for all detector thicknesses studied (0.5-3.0 mm), thus retaining dose efficiency. As expected, characteristic x-ray escape from the detector element of x-ray interaction increased with decreasing detector element size, approaching a 50% escape fraction for a 100 μm size detector element. The detector point spread function was observed to have only minor degradation with detector element size greater than 200 μm and lower kV settings. Characteristic x-rays produced increasing distortion

  12. Investigating the effect of characteristic x-rays in cadmium zinc telluride detectors under breast computerized tomography operating conditions

    SciTech Connect

    Glick, Stephen J.; Didier, Clay

    2013-10-14

    A number of research groups have been investigating the use of dedicated breast computerized tomography (CT). Preliminary results have been encouraging, suggesting an improved visualization of masses on breast CT as compared to conventional mammography. Nonetheless, there are many challenges to overcome before breast CT can become a routine clinical reality. One potential improvement over current breast CT prototypes would be the use of photon counting detectors with cadmium zinc telluride (CZT) (or CdTe) semiconductor material. These detectors can operate at room temperature and provide high detection efficiency and the capability of multi-energy imaging; however, one factor in particular that limits image quality is the emission of characteristic x-rays. In this study, the degradative effects of characteristic x-rays are examined when using a CZT detector under breast CT operating conditions. Monte Carlo simulation software was used to evaluate the effect of characteristic x-rays and the detector element size on spatial and spectral resolution for a CZT detector used under breast CT operating conditions. In particular, lower kVp spectra and thinner CZT thicknesses were studied than that typically used with CZT based conventional CT detectors. In addition, the effect of characteristic x-rays on the accuracy of material decomposition in spectral CT imaging was explored. It was observed that when imaging with 50-60 kVp spectra, the x-ray transmission through CZT was very low for all detector thicknesses studied (0.5–3.0 mm), thus retaining dose efficiency. As expected, characteristic x-ray escape from the detector element of x-ray interaction increased with decreasing detector element size, approaching a 50% escape fraction for a 100 μm size detector element. The detector point spread function was observed to have only minor degradation with detector element size greater than 200 μm and lower kV settings. Characteristic x-rays produced increasing distortion in

  13. Design study of a high-resolution breast-dedicated PET system built from cadmium zinc telluride detectors

    NASA Astrophysics Data System (ADS)

    Peng, Hao; Levin, Craig S.

    2010-05-01

    We studied the performance of a dual-panel positron emission tomography (PET) camera dedicated to breast cancer imaging using Monte Carlo simulation. The proposed system consists of two 4 cm thick 12 × 15 cm2 area cadmium zinc telluride (CZT) panels with adjustable separation, which can be put in close proximity to the breast and/or axillary nodes. Unique characteristics distinguishing the proposed system from previous efforts in breast-dedicated PET instrumentation are the deployment of CZT detectors with superior spatial and energy resolution, using a cross-strip electrode readout scheme to enable 3D positioning of individual photon interaction coordinates in the CZT, which includes directly measured photon depth-of-interaction (DOI), and arranging the detector slabs edge-on with respect to incoming 511 keV photons for high photon sensitivity. The simulation results show that the proposed CZT dual-panel PET system is able to achieve superior performance in terms of photon sensitivity, noise equivalent count rate, spatial resolution and lesion visualization. The proposed system is expected to achieve ~32% photon sensitivity for a point source at the center and a 4 cm panel separation. For a simplified breast phantom adjacent to heart and torso compartments, the peak noise equivalent count (NEC) rate is predicted to be ~94.2 kcts s-1 (breast volume: 720 cm3 and activity concentration: 3.7 kBq cm-3) for a ~10% energy window around 511 keV and ~8 ns coincidence time window. The system achieves 1 mm intrinsic spatial resolution anywhere between the two panels with a 4 cm panel separation if the detectors have DOI resolution less than 2 mm. For a 3 mm DOI resolution, the system exhibits excellent sphere resolution uniformity (σrms/mean) <= 10%) across a 4 cm width FOV. Simulation results indicate that the system exhibits superior hot sphere visualization and is expected to visualize 2 mm diameter spheres with a 5:1 activity concentration ratio within roughly 7 min

  14. Design study of a high-resolution breast-dedicated PET system built from cadmium zinc telluride detectors.

    PubMed

    Peng, Hao; Levin, Craig S

    2010-05-07

    We studied the performance of a dual-panel positron emission tomography (PET) camera dedicated to breast cancer imaging using Monte Carlo simulation. The proposed system consists of two 4 cm thick 12 x 15 cm(2) area cadmium zinc telluride (CZT) panels with adjustable separation, which can be put in close proximity to the breast and/or axillary nodes. Unique characteristics distinguishing the proposed system from previous efforts in breast-dedicated PET instrumentation are the deployment of CZT detectors with superior spatial and energy resolution, using a cross-strip electrode readout scheme to enable 3D positioning of individual photon interaction coordinates in the CZT, which includes directly measured photon depth-of-interaction (DOI), and arranging the detector slabs edge-on with respect to incoming 511 keV photons for high photon sensitivity. The simulation results show that the proposed CZT dual-panel PET system is able to achieve superior performance in terms of photon sensitivity, noise equivalent count rate, spatial resolution and lesion visualization. The proposed system is expected to achieve approximately 32% photon sensitivity for a point source at the center and a 4 cm panel separation. For a simplified breast phantom adjacent to heart and torso compartments, the peak noise equivalent count (NEC) rate is predicted to be approximately 94.2 kcts s(-1) (breast volume: 720 cm(3) and activity concentration: 3.7 kBq cm(-3)) for a approximately 10% energy window around 511 keV and approximately 8 ns coincidence time window. The system achieves 1 mm intrinsic spatial resolution anywhere between the two panels with a 4 cm panel separation if the detectors have DOI resolution less than 2 mm. For a 3 mm DOI resolution, the system exhibits excellent sphere resolution uniformity (sigma(rms)/mean) < or = 10%) across a 4 cm width FOV. Simulation results indicate that the system exhibits superior hot sphere visualization and is expected to visualize 2 mm diameter

  15. Investigating the effect of characteristic x-rays in cadmium zinc telluride detectors under breast computerized tomography operating conditions

    NASA Astrophysics Data System (ADS)

    Glick, Stephen J.; Didier, Clay

    2013-10-01

    A number of research groups have been investigating the use of dedicated breast computerized tomography (CT). Preliminary results have been encouraging, suggesting an improved visualization of masses on breast CT as compared to conventional mammography. Nonetheless, there are many challenges to overcome before breast CT can become a routine clinical reality. One potential improvement over current breast CT prototypes would be the use of photon counting detectors with cadmium zinc telluride (CZT) (or CdTe) semiconductor material. These detectors can operate at room temperature and provide high detection efficiency and the capability of multi-energy imaging; however, one factor in particular that limits image quality is the emission of characteristic x-rays. In this study, the degradative effects of characteristic x-rays are examined when using a CZT detector under breast CT operating conditions. Monte Carlo simulation software was used to evaluate the effect of characteristic x-rays and the detector element size on spatial and spectral resolution for a CZT detector used under breast CT operating conditions. In particular, lower kVp spectra and thinner CZT thicknesses were studied than that typically used with CZT based conventional CT detectors. In addition, the effect of characteristic x-rays on the accuracy of material decomposition in spectral CT imaging was explored. It was observed that when imaging with 50-60 kVp spectra, the x-ray transmission through CZT was very low for all detector thicknesses studied (0.5-3.0 mm), thus retaining dose efficiency. As expected, characteristic x-ray escape from the detector element of x-ray interaction increased with decreasing detector element size, approaching a 50% escape fraction for a 100 μm size detector element. The detector point spread function was observed to have only minor degradation with detector element size greater than 200 μm and lower kV settings. Characteristic x-rays produced increasing distortion in the

  16. Cadmium Manganese Telluride (Cd1-xMnxTe): A potential material for room-temperature radiation detectors

    SciTech Connect

    Hossain, A.; Cui, Y.; Bolotnikov, A.; Camarda, G.; Yang, G.; Kim, K-H.; Gul, R.; Xu, L.; Li, L.; Mycielski, A.; and James, R.B.

    2010-07-11

    Cadmium Manganese Telluride (CdMnTe) recently emerged as a promising material for room-temperature X- and gamma-ray detectors. It offers several potential advantages over CdZnTe. Among them is its optimal tunable band gap ranging from 1.7-2.2 eV, and its relatively low (< 50%) content of Mn compared to that of Zn in CdZnTe that assures this favorable band-gap range. Another important asset is the segregation coefficient of Mn in CdTe that is approximately unity compared to 1.35 for Zn in CdZnTe, so ensuring the homogenous distribution of Mn throughout the ingot; hence, a large-volume stoichiometric yield is attained. However, some materials issues primarily related to the growth process impede the production of large, defect-free single crystals. The high bond-ionicity of CdMnTe entails a higher propensity to crystallize into a hexagonal structure rather than to adopt the expected zinc-blend structure, which is likely to generate twins in the crystals. In addition, bulk defects generate in the as-grown crystals due to the dearth of high-purity Mn, which yields a low-resistivity material. In this presentation, we report on our observations of such material defects in current CdMnTe materials, and our evaluation of its potential as an alternative detector material to the well-known CdZnTe detectors. We characterized the bulk defects of several indium- and vanadium-doped Cd1-xMnxTe crystals by using several advanced techniques, viz., micro-scale mapping, white-beam x-ray diffraction/reflection topography, and chemical etching. Thereafter, we fabricated some detectors from selected CdMnTe crystals, characterized their electrical properties, and tested their performance as room-temperature X- and gamma-ray detectors. Our experimental results indicate that CdMnTe materials could well prove to become a viable alternative in the near future.

  17. Size and temperature dependence of the photoluminescence properties of NIR emitting ternary alloyed mercury cadmium telluride quantum dots

    NASA Astrophysics Data System (ADS)

    Jagtap, Amardeep M.; Chatterjee, Abhijit; Banerjee, Arup; Babu Pendyala, Naresh; Koteswara Rao, K. S. R.

    2016-04-01

    Exciton-phonon coupling and nonradiative relaxation processes have been investigated in near-infrared (NIR) emitting ternary alloyed mercury cadmium telluride (CdHgTe) quantum dots. Organically capped CdHgTe nanocrystals of sizes varying from 2.5-4.2 nm have been synthesized where emission is in the NIR region of 650-855 nm. Temperature-dependent (15-300 K) photoluminescence (PL) and the decay dynamics of PL at 300 K have been studied to understand the photophysical properties. The PL decay kinetics shows the transition from triexponential to biexponential on increasing the size of the quantom dots (QDs), informing the change in the distribution of the emitting states. The energy gap is found to be following the Varshni relation with a temperature coefficient of 2.1-2.8  ×  10-4 eV K-1. The strength of the electron-phonon coupling, which is reflected in the Huang and Rhys factor S, is found in the range of 1.17-1.68 for QDs with a size of 2.5-4.2 nm. The integrated PL intensity is nearly constant until 50 K, and slowly decreases up to 140 K, beyond which it decreases at a faster rate. The mechanism for PL quenching with temperature is attributed to the presence of nonradiative relaxation channels, where the excited carriers are thermally stimulated to the surface defect/trap states. At temperatures of different region (<140 K and 140-300 K), traps of low (13-25 meV) and high (65-140 meV) activation energies seem to be controlling the quenching of the PL emission. The broadening of emission linewidth is found to due to exciton-acoustic phonon scattering and exciton-longitudinal optical (LO) phonon coupling. The exciton-acoustic phonon scattering coefficient is found to be enhanced up to 55 μeV K-1 due to a stronger confinement effect. These findings give insight into understanding the photophysical properties of CdHgTe QDs and pave the way for their possible applications in the fields of NIR photodetectors and other optoelectronic devices.

  18. Experimental evaluation and simulation of multi-pixel cadmium-zinc-telluride hard-X-ray detectors

    NASA Astrophysics Data System (ADS)

    Gaskin, Jessica Anne

    2004-08-01

    This dissertation describes the evaluation of many-pixel Cadmium-Zinc-Telluride (CdZnTe) hard-X-ray detectors for future use with the High Energy Replicated Optics (HERO) telescope being developed at Marshall Space Flight Center. The detector requirements for the HERO application are good energy resolution (sufficient to resolve cyclotron features and nuclear lines), spatial resolution of ˜200 μm, minimal charge loss of absorbed X rays, and minimal sensitivity to the background environment. This research concentrates on assessing the suitability of these detectors for the focus of HERO, and includes the development of a simulation of the physics involved in an X-ray-detector interaction, a study of the intrinsic material properties, measurements with prototype detectors such as the energy and spatial resolution, charge loss, and X-ray background reduction through 3-dimensional depth sensing. Two types of detectors were available for evaluation. The first type includes 1-mm and 2-mm thick 4 x 4 pixel arrays, developed by Metorex Inc. and Baltic Scientific Instruments. The pixel size is 650 μm with inter-pixel gap of 100 μm. Each of the 16 pixels is wired to a charge sensitive preamplifier and then fed to external electronics. The second detector type includes 1-mm and 2-mm thick 16 x 16 pixel arrays with pixel size of 250 μm square and 50 μm inter-pixel gap. Each array is bonded to an Application Specific Integrated Circuit (ASIC) readout chip, developed by Rutherford Appleton Laboratory (RAL) and fabricated by Metorex Inc. The best energy resolution for both detector types is ˜2% at 60 keV. However, the energy resolution across the 16 x 16 pixel arrays varies dramatically, possibly due to the bonding technique used between the CdZnTe crystal and the ASIC. Position interpolation through charge sharing improves spatial resolution on the 16 x 16 pixel arrays from 300 μm to ˜250 μm. Minimal charge loss was measured for the 16 x 16 pixel arrays. Preliminary

  19. Thin film cadmium telluride photovoltaic cells. Annual subcontract report, 1 November 1991--31 October 1992

    SciTech Connect

    Compaan, C.D.; Bohn, R.G.

    1993-10-01

    This report describes work to develop and optimize radio-frequency (RF) sputtering and laser-driven physical vapor deposition (LDPVD) for CdTe-based thin-film solar cells. Both of these techniques are vacuum-based and share several other common physical principles. However, they differ somewhat in the typical kinetic energies of Cd, Te, and S that impact on the growth surface. The values of several processing parameters-optimized with the LDPVD technique-were taken as starting values for the RF sputtering method. We completed an initial optimization of the sputtering parameters for the CdTe growth and also successfully sputtered CdS for the first time. In addition, we successfully fabricated what we believe are the first CdS/CdTe cells in which RF sputtering was used for both CdS and CdTe layers. We achieved an all-LDPVD ell with an air mass (AM) 1.5 efficiency of 10.5% and an all-RF-sputtered cell with AM 1.5 efficiency of 10.4%, as tested by NREL.

  20. Environmentally responsible recycling of thin-film cadmium telluride photovoltaic modules. Final technical report

    SciTech Connect

    Bohland, John

    2002-09-09

    Continuing from the third quarter, all technical objectives of this Phase II SBIR work were previously and successfully completed. This report is therefore brief and contains two elements (1) a comparison of technical objective accomplishments to the stated goals in the original grant proposal (2) a summary of the third key element of this work; a market analysis for the developed recycling technology systems.

  1. Electron-reflector strategy for cadmium telluride thin-film solar cells

    NASA Astrophysics Data System (ADS)

    Hsiao, Kuo-Jui

    The CdTe thin-film solar cell has a large absorption coefficient and high theoretical efficiency. Moreover, large-area photovoltaic panels can be economically fabricated. These features potentially make the CdTe thin-film solar cell the leading alternative energy source. However, the record CdTe efficiency (16.5%) is much less than its theoretical maximum efficiency (29%), primarily because the open-circuit voltage (0.845 V) is well below what is expected for its band gap (1.5 eV). The incorporation of an electron reflector is a strategy to improve the open-circuit voltage of solar cells, and thus a strong possibility to improve the efficiency of CdTe thin-film solar cells. An electron reflector is a conduction-band energy barrier at the back surface of the solar cell, which can reduce the recombination due to the electron flow to the back surface. Different methods to create an electron reflector are explained in the thesis: (1) expanded band gap, either an expanded-band-gap layer or a bulk-band-gap reduction, and (2) alteration to the band bending through a reversed back barrier or a heavily-doped back surface. Investigation shows that the expanded-band-gap layer is the most efficient and practical mechanism for an electron reflector, and the combination of any two mechanisms does not yield additional improvement. To have the optimal effect from the electron-reflector strategy, reasonable CdTe lifetime (1 ns or above) and full depletion of the CdTe layer are required to ensure high carrier collection. Furthermore, a good-quality reflector interface between the p-type CdTe layer and the electron-reflector layer is essential. Preliminary experimental evidence has shown that CdTe cells with a ZnTe back layer do have a slightly higher open-circuit voltage. An electron reflector should be particularly beneficial for thin (less than 2 microm) CdTe cells which have a fully-depleted CdTe absorber layer. Thin CdTe cells can also benefit from the optical reflection at the

  2. Role of the copper-oxygen defect in cadmium telluride solar cells

    NASA Astrophysics Data System (ADS)

    Corwine, Caroline R.

    Thin-film CdTe is one of the leading materials used in photovoltaic (PV) solar cells. One way to improve device performance and stability is through understanding how various device processing steps alter defect states in the CdTe layer. Photoluminescence (PL) studies can be used to examine radiative defects in materials. This study uses low-temperature PL to probe the defects present in thin-film CdTe deposited for solar cells. One key defect seen in the thin-film CdTe was reproduced in single-crystal (sX) CdTe by systematic incorporation of known impurities in the thin-film growth process, hence demonstrating that both copper and oxygen were necessary for its formation. Polycrystalline (pX) thin-film glass/SnO2:F/CdS/CdTe structures were examined. The CdTe layer was grown via close-spaced sublimation (CSS), vapor transport deposition (VTD), and physical vapor deposition (PVD). After CdTe deposition, followed by a standard CdC12 treatment and a ZnTe:Cu back contact, a PL peak was seen at ˜1.46 eV from the free back surface of all samples (1.456 eV for CSS and PVD, 1.460-1.463 eV for VTD). However, before the Cu-containing contact was added, this peak was not seen from the front of the CdTe (the CdS/CdTe junction region) in any device with CdTe thickness greater than 4 mum. The CdCl2 treatment commonly used to increase CdTe grain size did not enhance or reduce the peak at ˜1.46 eV relative to the rest of the PL spectrum. When the Cu-containing contact was applied, the PL spectra from both the front and back of the CdTe exhibited the peak at 1.456 eV. The PL peak at ˜1.46 eV was present in thin-film CdTe after deposition, when the dominant impurities are expected to be both Cu from the CdTe source material and O introduced in the chamber during growth to assist in CdTe film density. Since Cu and/or O appeared to be involved in this defect, PL studies were done with sX CdTe to distinguish between the separate effects of Cu or O and the combined effect of Cu and O

  3. Progress Toward a Stabilization and Preconditioning Protocol for Polycrystalline Thin-Film Photovoltaic Modules

    SciTech Connect

    del Cueto, J. A.; Deline, C. A.; Rummel, S. R.; Anderberg, A.

    2010-08-01

    Cadmium telluride (CdTe) and copper indium gallium diselenide (CIGS) thin-film photovoltaic (PV) modules can exhibit substantial variation in measured performance depending on prior exposure history. This study examines the metastable performance changes in these PV modules with the goal of establishing standard preconditioning or stabilization exposure procedures to mitigate measured variations prior to current-voltage (IV) measurements.

  4. Efficient charge transfer and field-induced tunneling transport in hybrid composite device of organic semiconductor and cadmium telluride quantum dots

    SciTech Connect

    Varade, Vaibhav Jagtap, Amardeep M.; Koteswara Rao, K. S. R.; Ramesh, K. P.; Menon, R.; Anjaneyulu, P.

    2015-06-07

    Temperature and photo-dependent current–voltage characteristics are investigated in thin film devices of a hybrid-composite comprising of organic semiconductor poly(3,4-ethylenedioxythiophene):polystyrenesulfonate (PEDOT:PSS) and cadmium telluride quantum dots (CdTe QDs). A detailed study of the charge injection mechanism in ITO/PEDOT:PSS-CdTe QDs/Al device exhibits a transition from direct tunneling to Fowler–Nordheim tunneling with increasing electric field due to formation of high barrier at the QD interface. In addition, the hybrid-composite exhibits a huge photoluminescence quenching compared to aboriginal CdTe QDs and high increment in photoconductivity (∼ 400%), which is attributed to the charge transfer phenomena. The effective barrier height (Φ{sub B} ≈ 0.68 eV) is estimated from the transition voltage and the possible origin of its variation with temperature and photo-illumination is discussed.

  5. Material and detector properties of cadmium manganese telluride (Cd1-xMnxTe) crystals grown by the modified floating-zone method

    DOE PAGES

    Hossain, A.; Gu, G. D.; Bolotnikov, A. E.; ...

    2014-12-24

    We demonstrated the material- and radiation-detection properties of cadmium manganese telluride (Cd1-xMnxTe; x=0.06), a wide-band-gap semiconductor crystal grown by the modified floating-zone method. We investigated the presence of various bulk defects, such as Te inclusions, twins, and dislocations of several as-grown indium-doped Cd1-xMnxTe crystals using different techniques, viz., IR transmission microscopy, and chemical etching. We then fabricated four planar detectors from selected CdMnTe crystals, characterized their electrical properties, and tested their performance as room-temperature X- and gamma-ray detectors. Thus, our experimental results show that CMT crystals grown by the modified floating zone method apparently are free from Te inclusions. However,more » we still need to optimize our growth parameters to attain high-resistivity, large-volume single-crystal CdMnTe.« less

  6. Investigation of the internal electric field in cadmium zinc telluride detectors using the Pockels effect and the analysis of charge transients

    SciTech Connect

    Groza, Michael; Cui Yunlong; Buliga, Vladimir; Guo, Mingsheng; Coca, Constantine; Burger, Arnold; Krawczynski, Henric; Garson, Alfred III; Martin, Jerrad W.; Lee, Kuen; Li Qiang; Beilicke, Matthias

    2010-01-15

    The Pockels electro-optic effect can be used to investigate the internal electric field in cadmium zinc telluride (CZT) single crystals that are used to fabricate room temperature x and gamma radiation detectors. An agreement is found between the electric field mapping obtained from Pockels effect images and the measurements of charge transients generated by alpha particles. The Pockels effect images of a CZT detector along two mutually perpendicular directions are used to optimize the detector response in a dual anode configuration, a device in which the symmetry of the internal electric field with respect to the anode strips is of critical importance. The Pockels effect is also used to map the electric field in a CZT detector with dual anodes and an attempt is made to find a correlation with the simulated electric potential in such detectors. Finally, the stress-induced birefringence effects seen in the Pockels images are presented and discussed.

  7. Investigation of the Internal Electric Field in Cadmium Zinc Telluride Detectors Using the Pockels Effect and the Analysis of Charge Transients

    NASA Technical Reports Server (NTRS)

    Groza, Michael; Krawczynski, Henic; Garson, Alfred, III; Martin, Jerrad W.; Lee, Kuen; Li, Qiang; Beilicke, Matthias; Cui, Yunlong; Buliga, Vladimir; Guo, Mingsheng; hide

    2010-01-01

    The Pockels electro-optic effect can be used to investigate the internal electric field in cadmium zinc telluride (CZT) single crystals that are used to fabricate room temperature x and gamma radiation detectors. An agreement is found between the electric field mapping obtained from Pockels effect images and the measurements of charge transients generated by alpha particles. The Pockels effect images of a CZT detector along two mutually perpendicular directions are used to optimize the detector response in a dual anode configuration, a device in which the symmetry of the internal electric field with respect to the anode strips is of critical importance. The Pockels effect is also used to map the electric field in a CZT detector with dual anodes and an attempt is made to find a correlation with the simulated electric potential in such detectors. Finally, the stress-induced birefringence effects seen in the Pockels images are presented and discussed.

  8. Investigation of the Internal Electric Field in Cadmium Zinc Telluride Detectors Using the Pockels Effect and the Analysis of Charge Transients

    NASA Technical Reports Server (NTRS)

    Groza, Michael; Krawczynski, Henic; Garson, Alfred, III; Martin, Jerrad W.; Lee, Kuen; Li, Qiang; Beilicke, Matthias; Cui, Yunlong; Buliga, Vladimir; Guo, Mingsheng; Coca, Constantine; Burger, Arnold

    2010-01-01

    The Pockels electro-optic effect can be used to investigate the internal electric field in cadmium zinc telluride (CZT) single crystals that are used to fabricate room temperature x and gamma radiation detectors. An agreement is found between the electric field mapping obtained from Pockels effect images and the measurements of charge transients generated by alpha particles. The Pockels effect images of a CZT detector along two mutually perpendicular directions are used to optimize the detector response in a dual anode configuration, a device in which the symmetry of the internal electric field with respect to the anode strips is of critical importance. The Pockels effect is also used to map the electric field in a CZT detector with dual anodes and an attempt is made to find a correlation with the simulated electric potential in such detectors. Finally, the stress-induced birefringence effects seen in the Pockels images are presented and discussed.

  9. Electrical Properties of Polycrystalline Cadmium Sulfide Films Produced by Laser-Driven Physical Vapor Deposition for Cadmium Sulfide/cadmium Telluride Solar Cells

    NASA Astrophysics Data System (ADS)

    Tsien, Li-Hua

    1992-01-01

    Electrical conductivity, carrier density, and mobilities have been measured for CdS films grown on glass substrates by laser-driven physical vapor deposition (LDPVD). This work was part of an overall effort to gain a better understanding of the processes that are important in determining the efficiency of CdTe-based thin film solar cells. Films were grown from several target materials including pure CdS, CdS doped with indium, and CdS mixed with cadmium chloride. Some films were also subjected to post-growth chemical and thermal treatments. Generally, grain boundary effects dominate the mobility between 80K and 350K. The data is interpreted using a model for polycrystalline and powdered semiconductors which was developed by Orton and Powell (J. S. Orton and M. J. Powell, Rep. Prog. Phys. 43, 81 (1980)) and is discussed using the concept of effective doping levels.

  10. Strategic approaches towards solving critical challenges in crystal growth of detector grade cadmium0.9zinc0.1telluride including melt mixing techniques

    NASA Astrophysics Data System (ADS)

    Datta, Amlan

    Over the last few decades Cadmium Zinc Telluride (CZT) has emerged as a novel material for radiation detection in homeland security as well as medical applications and as substrates for epitaxial growth of infrared detector, Mercury Cadmium Telluride. There are, however, several critical issues regarding the bulk growth of CZT which renders it unsuitable or cost ineffective for these applications. These challenges can be summarized as non-uniformity (due to Zinc and intentional dopant segregation), longer growth times (because of lower thermal conductivity of the melt), Tellurium (Te) secondary phases (SP), unstable growth interface (due to lower thermal conductivity and higher heat of fusion) and non-stoichiometric growth conditions. Systematic approaches towards solving these problems will be discussed along with the consequences and future research directions. By application of a proper mixing technique to the CZT melt, most inhomogeneity problems that are common in growth techniques using non rotating crucibles can be overcome. A unique custom made ampoule rotation system was developed for mixing the CZT melt by applying several rotation parameters. Experiments were performed with different growth temperature profiles, rotation parameters and charge/dopant concentrations. Improvements in Zinc distribution profiles and the shape of the liquid/solid interface during the growth process were determined by room temperature photoluminescence (RT-PL) mapping of radial and longitudinal-cut CZT wafers. SP diameters were limited to a maximum of 10 microm after application of ampoule rotation, with distribution maxima at 6 microm. Growth interface studies revealed several unique features which will be discussed in the dissertation. The spectral, optical and electrical properties of the detectors fabricated from all these growths will be presented. The statistical variations of different properties along the grown ingots will be discussed.

  11. Investigating the effect of characteristic x-rays in cadmium zinc telluride detectors under breast computerized tomography operating conditions

    PubMed Central

    Glick, Stephen J.; Didier, Clay

    2013-01-01

    A number of research groups have been investigating the use of dedicated breast computerized tomography (CT). Preliminary results have been encouraging, suggesting an improved visualization of masses on breast CT as compared to conventional mammography. Nonetheless, there are many challenges to overcome before breast CT can become a routine clinical reality. One potential improvement over current breast CT prototypes would be the use of photon counting detectors with cadmium zinc telluride (CZT) (or CdTe) semiconductor material. These detectors can operate at room temperature and provide high detection efficiency and the capability of multi-energy imaging; however, one factor in particular that limits image quality is the emission of characteristic x-rays. In this study, the degradative effects of characteristic x-rays are examined when using a CZT detector under breast CT operating conditions. Monte Carlo simulation software was used to evaluate the effect of characteristic x-rays and the detector element size on spatial and spectral resolution for a CZT detector used under breast CT operating conditions. In particular, lower kVp spectra and thinner CZT thicknesses were studied than that typically used with CZT based conventional CT detectors. In addition, the effect of characteristic x-rays on the accuracy of material decomposition in spectral CT imaging was explored. It was observed that when imaging with 50-60 kVp spectra, the x-ray transmission through CZT was very low for all detector thicknesses studied (0.5–3.0 mm), thus retaining dose efficiency. As expected, characteristic x-ray escape from the detector element of x-ray interaction increased with decreasing detector element size, approaching a 50% escape fraction for a 100 μm size detector element. The detector point spread function was observed to have only minor degradation with detector element size greater than 200 μm and lower kV settings. Characteristic x-rays produced increasing

  12. Photocurrent spectroscopy of cadmium sulfide/plastic, cadmium sulfide/glass, and zinc telluride/gallium arsenide hetero-pairs formed with pulsed-laser deposition

    NASA Astrophysics Data System (ADS)

    Acharya, Krishna Prasad

    This dissertation presents photocurrent (PC) spectroscopy of thin-film cadmium sulfide (CdS) on plastic, CdS on glass, and zinc telluride (ZnTe) on gallium arsenide (GaAs) hetero-pairs. All samples have been prepared with pulsed-laser deposition (PLD) and the thesis is organized into three principal sections. The first section presents the PLD essentials and characterization of CdS thin films on transparent plastic substrates. The second part focuses on the exploitation of CdS films on glass to quench or modulate alternating photocurrent (APC) by additional constant blue light illumination. Finally, PC spectra modification of n-GaAs due to ZnTe PLD will be investigated. First, the merger of a transparent plastic substrate with thin-film CdS for photonic application was realized using low-temperature PLD, where low-temperature PLD means the substrates were not externally heated. Although plastic is not considered to be a favored substrate material for semiconductor thin-film formation, the deposited CdS film possessed good adhesion to the plastic substrates and showed a blue-shifted photosensitivity with peak at 2.54 eV. The CdS deposition rate was monitored at different laser fluences and the maximum rate was found at 2.68 J/cm2. The visualization of the surface using an atomic force microscope (AFM) revealed its mosaic structure and electron probe microanalysis showed that target composition was maintained in the film. The study of thickness distribution revealed that the film deposition area is significantly increased with increase in laser fluence. The achieved results demonstrate the capability of PLD to form novel heterostructures with appealing and useful technological properties such as plasticity and low weight. In the second part, APC control via blue light illumination employing thin-film PLD CdS on a glass is introduced. In fact, the APC driven through the CdS film in conjunction with bias was quenched when the sample was additionally illuminated with a

  13. Nanocrystal Photovoltaics: The Case of Copper Sulfide-Cadmium Sulfide

    NASA Astrophysics Data System (ADS)

    Rivest, Jessica Louis Baker

    In this dissertation, fine control over the morphology and composition of a nanostructured semiconductor thin film is demonstrated at a degree not previously possible. While such control is beneficial in a variety of optical and electrical devices, this research was performed from the perspective of photovoltaics. A new architecture is presented for low cost and high conversion efficiency photovoltaics, utilizing self-assembled nanocrystals. A method is introduced for vertically aligning nanorods using a controlled-evaporation self-assembly technique, enabling the uniform alignment of nanorods on a square-centimeter substrate. Such meso-scale assembly and optimization required the development of a morphology quantification technique. The technique presented here utilizes grazing incidence x-ray diffraction to assemble a quantitative pole figure, or nanorod orientation histogram, and can be used with any thin film. After nanorod assembly, an asymmetric electrical junction (required for photovoltaic operation) is achieved in each rod using a cation exchange technique, which can be performed reliably and reversibly on-chip. This results in a film comprising a massively parallel array of single-crystal nanodiodes. Electrical measurements of these films show rectified behavior and reveal a photocurrent upon illumination of the aligned and cation-exchanged films. Finally, the stability of the Cu 2S phase is investigated as a function of nanocrystal size. The low chalcocite to high chalcocite solid-solid crystallographic phase transition is found to occur at temperatures depressed 60 Kelvin below the bulk phase transition temperature. The research summarized in this dissertation describes a set of synthetic and analytical techniques that enable nanoscopic control of morphology and composition in device-scale semiconductor thin films. Such control may be leveraged to precisely manipulate the flow of charge carriers in optoelectronic devices. Due to the simple wet chemical

  14. Strategies for recycling CdTe photovoltaic modules

    NASA Astrophysics Data System (ADS)

    Eberspacher, Chris; Gay, Charles F.; Moskowitz, Paul D.

    1994-12-01

    Recycling end-of-life cadmium telluride (CdTe) photovoltaic (PV) modules may enhance the competitive advantage of CdTe PV in the marketplace, but the experiences of industries with comparable Environmental, Health and Safety (EH&S) challenges suggest that collection and recycling costs can impose significant economic burdens. Customer cooperation and pending changes to US Federal law may improve recycling economics.

  15. Performance of cardiac cadmium-zinc-telluride gamma camera imaging in coronary artery disease: a review from the cardiovascular committee of the European Association of Nuclear Medicine (EANM).

    PubMed

    Agostini, Denis; Marie, Pierre-Yves; Ben-Haim, Simona; Rouzet, François; Songy, Bernard; Giordano, Alessandro; Gimelli, Alessia; Hyafil, Fabien; Sciagrà, Roberto; Bucerius, Jan; Verberne, Hein J; Slart, Riemer H J A; Lindner, Oliver; Übleis, Christopher; Hacker, Marcus

    2016-12-01

    The trade-off between resolution and count sensitivity dominates the performance of standard gamma cameras and dictates the need for relatively high doses of radioactivity of the used radiopharmaceuticals in order to limit image acquisition duration. The introduction of cadmium-zinc-telluride (CZT)-based cameras may overcome some of the limitations against conventional gamma cameras. CZT cameras used for the evaluation of myocardial perfusion have been shown to have a higher count sensitivity compared to conventional single photon emission computed tomography (SPECT) techniques. CZT image quality is further improved by the development of a dedicated three-dimensional iterative reconstruction algorithm, based on maximum likelihood expectation maximization (MLEM), which corrects for the loss in spatial resolution due to line response function of the collimator. All these innovations significantly reduce imaging time and result in a lower patient's radiation exposure compared with standard SPECT. To guide current and possible future users of the CZT technique for myocardial perfusion imaging, the Cardiovascular Committee of the European Association of Nuclear Medicine, starting from the experience of its members, has decided to examine the current literature regarding procedures and clinical data on CZT cameras. The committee hereby aims 1) to identify the main acquisitions protocols; 2) to evaluate the diagnostic and prognostic value of CZT derived myocardial perfusion, and finally 3) to determine the impact of CZT on radiation exposure.

  16. Analysis of the effects of a rotating magnetic field on the growth of cadmium zinc telluride by the traveling heater method under microgravity conditions

    NASA Astrophysics Data System (ADS)

    Li, Zaoyang; Peterson, Jeffrey H.; Yeckel, Andrew; Derby, Jeffrey J.

    2016-10-01

    We present a fully coupled model for the traveling heater method (THM) under microgravity conditions and a rotating magnetic field (RMF) and apply it to analyze the growth of cadmium zinc telluride (CZT). The model provides a self-consistent representation of fluid flow and heat and mass transfer in a liquid zone shaped by dissolution and growth interfaces that are computed to satisfy local transport and thermodynamic equilibrium conditions. The temperature, stream function, tellurium, and zinc profiles in the liquid are analyzed with and without the rotating magnetic field. Results show that the system is very sensitive to the growth rate under microgravity alone, leading to tellurium accumulation, a concave growth interface, and constitutional supercooling at faster growth rates. While RMF-induced convection mixes the zone, creates a more uniform composition, and makes the microgravity system less sensitive to growth rate variations, RMF can also lead to undesirable outcomes. In particular, for stronger RMF fields, flows are driven inward along the growth interface, and the resulting accumulation of tellurium near the centerline results in localized interface concavity and liquid supercooling. The mechanisms behind the above phenomena are clarified, and some advice is provided for applying the RMF appropriately to THM CZT growth under microgravity conditions.

  17. Investigation of dual-energy X-ray photon counting using a cadmium telluride detector with dual-energy selection electronics

    NASA Astrophysics Data System (ADS)

    Sato, Eiichi; Kosuge, Yoshiyuki; Yamanome, Hayato; Mikata, Akiko; Miura, Tatsuya; Oda, Yasuyuki; Ishii, Tomotaka; Hagiwara, Osahiko; Matsukiyo, Hiroshi; Watanabe, Manabu; Kusachi, Shinya

    2017-01-01

    To obtain two kinds of tomograms at two different X-ray energy ranges simultaneously, we have developed a dual-energy X-ray photon counter with a cadmium telluride (CdTe) detector and two energy-selecting devices (ESDs). The ESD consists of two comparators and a microcomputer (MC). X-ray photons are detected using the CdTe detector, and the event pulses from a shaping amplifier are sent to two ESDs simultaneously to determine two energy ranges. X-ray photons in the two ranges are counted using the MCs, and the logical pulses from the MCs are input to frequency-to-voltage converters (FVCs). The outputs from the two FVCs are input to a personal computer through an analog-to-digital converter to carry out dual-energy computed tomography. The tube voltage and current were 80 kV and 8.5 μA, respectively. Two tomograms were obtained simultaneously with two energy ranges. K-edge CT using iodine and gadolinium media was carried out utilizing two energy ranges of 33-45 and 50-65 keV, respectively. The maximum count rate was 6.8 kilocounts per second with energies ranging from 10 to 80 keV, and the exposure time for tomography was 9.8 min.

  18. Time resolved long-wave infrared laser-induced breakdown spectroscopy of inorganic energetic materials by a rapid mercury-cadmium-telluride linear array detection system.

    PubMed

    Yang, Clayton S-C; Jin, Feng; Trivedi, Sudhir; Brown, Eiei; Hommerich, Uwe; Khurgin, Jacob B; Samuels, Alan C

    2016-11-10

    A mercury-cadmium-telluride linear array detection system that is capable of rapidly capturing (∼1-5 s) a broad spectrum of atomic and molecular laser-induced breakdown spectroscopy (LIBS) emissions in the long-wave infrared region (LWIR, ∼5.6-10 μm) was recently developed. Similar to the conventional ultraviolet-visible LIBS, a broadband emission spectrum of condensed phase samples covering a 5.6-10 μm spectral region could be acquired from just a single laser-induced micro-plasma. Intense and distinct atomic and molecular LWIR emission signatures of various solid inorganic energetic materials were readily observed and identified. Time resolved emissions of inorganic energetic materials were studied to assess the lifetimes of LWIR atomic and molecular emissions. The LWIR atomic emissions generally decayed fast on the scale of tens of microseconds, while the molecular signature emissions from target molecules excited by the laser-induced plasma appeared to be very long lived (∼millisecond). The time dependence of emission intensities and peak wavelengths of these signature emissions gave an insight into the origin and the environment of the emitting target species. Moreover, observed lifetimes of these LWIR emissions can be utilized for further optimization of the signal quality and detection limits of this technique.

  19. Clinical significance of right ventricular activity on treadmill thallium-201 myocardial single-photon emission computerized tomography using cadmium-zinc-telluride cameras.

    PubMed

    Ko, Kuan-Yin; Wu, Yen-Wen; Liu, Chia-Ju; Cheng, Mei-Fang; Yen, Ruoh-Fang; Tzen, Kai-Yuan

    2016-06-01

    Identification of right ventricular (RV) abnormalities is important in patients with suspected coronary artery disease (CAD). RV activity can be better visualized on myocardial single-photon emission computerized tomography (SPECT) using a higher sensitivity cadmium-zinc-telluride (CZT) detector. The aim of this study was to investigate the clinical significance of RV/left ventricular (LV) uptake ratios during exercise thallium-201 SPECT using CZT detectors. A total of 102 patients underwent treadmill ECG-gated SPECT, coronary angiography, and echocardiography. SPECT myocardial perfusion was interpreted using a 17-segment model and a 0-4-point scale. RV/LV uptake ratios were calculated on the basis of maximum counts per pixel within the entire RV and LV walls. The relationships between RV/LV uptake ratio and gated SPECT, presence of CAD (≥50% stenosis in the left main or ≥70% in the main branches), demographics, and echocardiographic parameters were analyzed. Stress RV/LV ratios correlated positively with the presence of left main or multivessel disease, and tricuspid regurgitation maximum pressure gradient. After multivariate regression, stress/rest RV/LV ratios correlated positively with mitral flow deceleration time, age, female sex, and use of β-blockers. RV/LV uptake ratios on the basis of exercise myocardial perfusion SPECT imaging using CZT cameras are useful for the detection of severe CAD and could serve as an indicator of pulmonary hypertension and LV diastolic dysfunction.

  20. Characterization of a sub-assembly of 3D position sensitive cadmium zinc telluride detectors and electronics from a sub-millimeter resolution PET system.

    PubMed

    Abbaszadeh, Shiva; Gu, Yi; Reynolds, Paul D; Levin, Craig S

    2016-09-21

    Cadmium zinc telluride (CZT) offers key advantages for small animal positron emission tomography (PET), including high spatial and energy resolution and simple metal deposition for fabrication of very small pixel arrays. Previous studies have investigated the intrinsic spatial, energy, and timing resolution of an individual sub-millimeter resolution CZT detector. In this work we present the first characterization results of a system of these detectors. The 3D position sensitive dual-CZT detector module and readout electronics developed in our lab was scaled up to complete a significant portion of the final PET system. This sub-system was configured as two opposing detection panels containing a total of twelve [Formula: see text] mm monolithic CZT crystals for proof of concept. System-level characterization studies, including optimizing the trigger threshold of each channel's comparators, were performed. (68)Ge and (137)Cs radioactive isotopes were used to characterize the energy resolution of all 468 anode channels in the sub-system. The mean measured global 511 keV photopeak energy resolution over all anodes was found to be [Formula: see text]% FWHM after correction for photon interaction depth-dependent signal variation. The measured global time resolution was 37 ns FWHM, a parameter to be further optimized, and the intrinsic spatial resolution was 0.76 mm FWHM.

  1. Segmental and global left ventricular function assessment using gated SPECT with a semiconductor Cadmium Zinc Telluride (CZT) camera: phantom study and clinical validation vs cardiac magnetic resonance.

    PubMed

    Bailliez, Alban; Blaire, Tanguy; Mouquet, Frédéric; Legghe, R; Etienne, B; Legallois, Damien; Agostini, Denis; Manrique, Alain

    2014-08-01

    We evaluated gated-SPECT using a Cadmium-Zinc-Telluride (CZT) camera for assessing global and regional left ventricular (LV) function. A phantom study evaluated the accuracy of wall thickening assessment using systolic count increase on both Anger and CZT (Discovery 530NMc) cameras. The refillable phantom simulated variable myocardial wall thicknesses. The apparent count increase (%CI) was compared to the thickness increase (%Th). CZT gated-SPECT was compared to cardiac magnetic resonance (CMR) in 27 patients. Global and regional LV function (wall thickening and motion) were quantified and compared between SPECT and CMR data. In the phantom study using a 5-mm object, the regression between %CI and %Th was significantly closer to the line of identity (y = x) with the CZT (R (2) = 0.9955) than the Anger (R (2) = 0.9995, P = .03). There was a weaker correlation for larger objects (P = .003). In patients, there was a high concordance between CZT and CMR for ESV, EDV, and LVEF (all CCC >0.80, P < .001). CZT underestimated %CI and wall motion (WM) compared to CMR (P < .001). The agreement to CMR was better for WM than wall thickening. The Discovery 530NMc provided accurate measurements of global LV function but underestimated regional wall thickening, especially in patients with increased wall thickness.

  2. First principles phase transition, elastic properties and electronic structure calculations for cadmium telluride under induced pressure: density functional theory, LDA, GGA and modified Becke-Johnson potential

    NASA Astrophysics Data System (ADS)

    Kabita, Kh; Maibam, Jameson; Indrajit Sharma, B.; Brojen Singh, R. K.; Thapa, R. K.

    2016-01-01

    We report first principles phase transition, elastic properties and electronic structure for cadmium telluride (CdTe) under induced pressure in the light of density functional theory using the local density approximation (LDA), generalised gradient approximation (GGA) and modified Becke-Johnson (mBJ) potential. The structural phase transition of CdTe from a zinc blende (ZB) to a rock salt (RS) structure within the LDA calculation is 2.2 GPa while that within GGA is found to be at 4 GPa pressure with a volume collapse of 20.9%. The elastic constants and parameters (Zener anisotropy factor, Shear modulus, Poisson’s ratio, Young’s modulus, Kleinmann parameter and Debye’s temperature) of CdTe at different pressures of both the phases have been calculated. The band diagram of the CdTe ZB structure shows a direct band gap of 1.46 eV as predicted by mBJ calculation which gives better results in close agreement with experimental results as compared to LDA and GGA. An increase in the band gap of the CdTe ZB phase is predicted under induced pressure while the metallic nature is retained in the CdTe RS phase.

  3. Rapid long-wave infrared laser-induced breakdown spectroscopy measurements using a mercury-cadmium-telluride linear array detection system.

    PubMed

    Yang, Clayton S-C; Brown, Eiei; Kumi-Barimah, Eric; Hommerich, Uwe; Jin, Feng; Jia, Yingqing; Trivedi, Sudhir; D'souza, Arvind I; Decuir, Eric A; Wijewarnasuriya, Priyalal S; Samuels, Alan C

    2015-11-20

    In this work, we develop a mercury-cadmium-telluride linear array detection system that is capable of rapidly capturing (∼1-5  s) a broad spectrum of atomic and molecular laser-induced breakdown spectroscopy (LIBS) emissions in the long-wave infrared (LWIR) region (∼5.6-10  μm). Similar to the conventional UV-Vis LIBS, a broadband emission spectrum of condensed phase samples covering the whole 5.6-10 μm region can be acquired from just a single laser-induced microplasma or averaging a few single laser-induced microplasmas. Atomic and molecular signature emission spectra of solid inorganic and organic tablets and thin liquid films deposited on a rough asphalt surface are observed. This setup is capable of rapidly probing samples "as is" without the need of elaborate sample preparation and also offers the possibility of a simultaneous UV-Vis and LWIR LIBS measurement.

  4. Investigation of quad-energy high-rate photon counting for X-ray computed tomography using a cadmium telluride detector.

    PubMed

    Matsukiyo, Hiroshi; Sato, Eiichi; Oda, Yasuyuki; Yamaguchi, Satoshi; Sato, Yuichi; Hagiwara, Osahiko; Enomoto, Toshiyuki; Watanabe, Manabu; Kusachi, Shinya

    2017-09-10

    To obtain four kinds of tomograms at four different X-ray energy ranges simultaneously, we have constructed a quad-energy (QE) X-ray photon counter with a cadmium telluride (CdTe) detector and four sets of comparators and microcomputers (MCs). X-ray photons are detected using the CdTe detector, and the event pulses produced using amplifiers are sent to four comparators simultaneously to regulate four threshold energies of 20, 33, 50 and 65keV. Using this counter, the energy ranges are 20-33, 33-50, 50-65 and 65-100keV; the maximum energy corresponds to the tube voltage. We performed QE computed tomography (QE-CT) at a tube voltage of 100kV. Using a 0.5-mm-diam lead pinhole, four tomograms were obtained simultaneously at four energy ranges. K-edge CT using iodine and gadolinium media was carried out utilizing two energy ranges of 33-50 and 50-65keV, respectively. At a tube voltage of 100kV and a current of 60 μA, the count rate was 15.2 kilocounts per second (kcps), and the minimum count rates after penetrating objects in QE-CT were regulated to approximately 2 kcps by the tube current. Copyright © 2017 Elsevier Ltd. All rights reserved.

  5. Characterization of a sub-assembly of 3D position sensitive cadmium zinc telluride detectors and electronics from a sub-millimeter resolution PET system

    NASA Astrophysics Data System (ADS)

    Abbaszadeh, Shiva; Gu, Yi; Reynolds, Paul D.; Levin, Craig S.

    2016-09-01

    Cadmium zinc telluride (CZT) offers key advantages for small animal positron emission tomography (PET), including high spatial and energy resolution and simple metal deposition for fabrication of very small pixel arrays. Previous studies have investigated the intrinsic spatial, energy, and timing resolution of an individual sub-millimeter resolution CZT detector. In this work we present the first characterization results of a system of these detectors. The 3D position sensitive dual-CZT detector module and readout electronics developed in our lab was scaled up to complete a significant portion of the final PET system. This sub-system was configured as two opposing detection panels containing a total of twelve 40~\\text{mm}× 40~\\text{mm}× 5 mm monolithic CZT crystals for proof of concept. System-level characterization studies, including optimizing the trigger threshold of each channel’s comparators, were performed. 68Ge and 137Cs radioactive isotopes were used to characterize the energy resolution of all 468 anode channels in the sub-system. The mean measured global 511 keV photopeak energy resolution over all anodes was found to be 7.35+/- 1.75 % FWHM after correction for photon interaction depth-dependent signal variation. The measured global time resolution was 37 ns FWHM, a parameter to be further optimized, and the intrinsic spatial resolution was 0.76 mm FWHM.

  6. Photovoltaic Cell And Manufacturing Process

    DOEpatents

    Albright, Scot P.; Chamberlin, Rhodes R.

    1996-11-26

    Provided is a method for controlling electrical properties and morphology of a p-type material of a photovoltaic device. The p-type material, such as p-type cadmium telluride, is first subjected to heat treatment in an oxidizing environment, followed by recrystallization in an environment substantially free of oxidants. In one embodiment, the heat treatment step comprises first subjecting the p-type material to an oxidizing atmosphere at a first temperature to getter impurities, followed by second subjecting the p-type material to an oxidizing atmosphere at a second temperature, higher than the first temperature, to develop a desired oxidation gradient through the p-type material.

  7. Spectral analysis of the effects of 1.7 MeV electron irradiation on the current transfer characteristic of cadmium telluride solar cells.

    PubMed

    Tian, Jin-Xiu; Zeng, Guang-Gen; He, Xu-Lin; Zhang, Jing-Quan; Wu, Li-Li; Li, Wei; Li, Bing; Wang, Wen-Wu; Feng, Liang-Huan

    2014-04-01

    The effects of device performance of 1.7 MeV electron irradiation on cadmium telluride polycrystalline thin film solar cells with the structure of anti-radiation glass/ITO/ZnO/CdS/CdTe/ZnTe/ZnTe : Cu/Ni have been studied. Light and dark I-V characteristics, dark C-V characteristics, quantum efficiency (QE), admittance spectrum (AS) and other testing methods were used to analyze cells performance such as the open-circuit voltage (Voc), short-circuit current (Isc), fill factor (FF) and conversion efficiency (eta). It was explored to find out the effects of irradiation on the current transfer characteristic of solar cells combined with the dark current density (Jo), diode ideal factor (A), quantum efficiency, carrier concentration and the depletion layer width. The decline in short-circuit current was very large and the efficiency of solar cells decreased obviously after irradiation. Reverse saturation current density increased, which indicates that p-n junction characteristics of solar cells were damaged, and diode ideal factor was almost the same, so current transport mechanism of solar cells has not changed. Quantum efficiency curves proved that the damage of solar cells' p-n junction influenced the collection of photo-generated carriers. Irradiation made carrier concentration reduce to 40.6%. The analyses have shown that. A new defect was induced by electron irradiation, whose position is close to 0.58 eV above the valence band in the forbidden band, and capture cross section is 1.78 x 10(-16) cm2. These results indicate that irradiation influences the generation of photo-generated carriers, increases the risk of the carrier recombination and the reverse dark current, and eventually makes the short-circuit current of solar cells decay.

  8. (99m)Tc-MDP bone scintigraphy of the hand: comparing the use of novel cadmium zinc telluride (CZT) and routine NaI(Tl) detectors.

    PubMed

    Koulikov, Victoria; Lerman, Hedva; Kesler, Mikhail; Even-Sapir, Einat

    2015-12-01

    Cadmium zinc telluride (CZT) solid-state detectors have been recently introduced in the field of nuclear medicine in cardiology and breast imaging. The aim of the current study was to evaluate the performance of the novel detectors (CZT) compared to that of the routine NaI(Tl) in bone scintigraphy. A dual-headed CZT-based camera dedicated originally to breast imaging has been used, and in view of the limited size of the detectors, the hands were chosen as the organ for assessment. This is a clinical study. Fifty-eight consecutive patients (total 116 hands) referred for bone scan for suspected hand pathology gave their informed consent to have two acquisitions, using the routine camera and the CZT-based camera. The latter was divided into full-dose full-acquisition time (FD CZT) and reduced-dose short-acquisition time (RD CZT) on CZT technology, so three image sets were available for analysis. Data analysis included comparing the detection of hot lesions and identification of the metacarpophalangeal, proximal interphalangeal, and distal interphalangeal joints. A total of 69 hot lesions were detected on the CZT image sets; of these, 61 were identified as focal sites of uptake on NaI(Tl) data. On FD CZT data, 385 joints were identified compared to 168 on NaI(Tl) data (p < 0.001). There was no statistically significant difference in delineation of joints between FD and RD CZT data as the latter identified 383 joints. Bone scintigraphy using a CZT-based gamma camera is associated with improved lesion detection and anatomic definition. The superior physical characteristics of this technique raised a potential reduction in administered dose and/or acquisition time without compromising image quality.

  9. Comparison of myocardial perfusion imaging using thallium-201 between a new cadmium-zinc-telluride cardiac camera and a conventional SPECT camera.

    PubMed

    Songy, Bernard; Lussato, David; Guernou, Mohamed; Queneau, Mathieu; Geronazzo, Ricardo

    2011-09-01

    Cadmium zinc telluride (CZT) solid-state detectors have been recently introduced in myocardial perfusion imaging. However, they had not been yet validated with thallium-201. This study compares the clinical performances of the CZT ultrafast camera GE DNM 530c with a conventional SPECT camera (CC) using thallium-201. We prospectively studied with thallium-201 a total of 153 consecutive patients referred for myocardial perfusion imaging at exercise (3-4 mCi) then redistribution (with 1 mCi reinjection). Sequential acquisitions were performed first with a conventional dual-head tomographic Anger camera (CC) in 10 to 15 minutes and then with a CZT camera (CZT) in 5 minutes, in prone position. In all, 9 patients were excluded: 1 for mispositioning, 3 for camera failure, 3 for delayed acquisition after exercise, 1 for nonacceptance of redistribution, 1 for motion. Acquisition was more comfortable with CZT for all patients. Global counts rate was higher with CZT than with CC (3.6±0.57 KCts/s vs. 1.14±0.16). CZT has a 5-fold increased myocardial counts rate compared with CC (448±69 Kcts in 5 minutes vs. 209±40 Kcts in 12.5±1.8 minutes). Quality of CZT images was considered as better in 40%, equal in 56%, and worse in 4% of cases; we found less artifacts with CZT; diagnostic conclusions were the same in 140 of 144 cases (97%); discordances were 2 artifacts with CC and 2 small ischemia (less than 2 segments) missed by CZT. This new dedicated cardiac CZT camera allows with thallium-201 five minutes acquisitions with an increased image quality and a reliable diagnosis quality.

  10. SemiSPECT: a small-animal single-photon emission computed tomography (SPECT) imager based on eight cadmium zinc telluride (CZT) detector arrays.

    PubMed

    Kim, Hyunki; Furenlid, Lars R; Crawford, Michael J; Wilson, Donald W; Barber, H Bradford; Peterson, Todd E; Hunter, William C J; Liu, Zhonglin; Woolfenden, James M; Barrett, Harrison H

    2006-02-01

    The first full single-photon emission computed tomography (SPECT) imager to exploit eight compact high-intrinsic-resolution cadmium zinc telluride (CZT) detectors, called SemiSPECT, has been completed. Each detector consists of a CZT crystal and a customized application-specific integrated circuit (ASIC). The CZT crystal is a 2.7 cm x 2.7 cm x -0.2 cm slab with a continuous top electrode and a bottom electrode patterned into a 64 x 64 pixel array by photolithography. The ASIC is attached to the bottom of the CZT crystal by indium-bump bonding. A bias voltage of -180 V is applied to the continuous electrode. The eight detectors are arranged in an octagonal lead-shielded ring. Each pinhole in the eight-pinhole aperture placed at the center of the ring is matched to each individual detector array. An object is imaged onto each detector through a pinhole, and each detector is operated independently with list-mode acquisition. The imaging subject can be rotated about a vertical axis to obtain additional angular projections. The performance of SemiSPECT was characterized using 99mTc. When a 0.5 mm diameter pinhole is used, the spatial resolution on each axis is about 1.4 mm as estimated by the Fourier crosstalk matrix, which provides an algorithm-independent average resolution over the field of view. The energy resolution achieved by summing neighboring pixel signals in a 3 x 3 window is about 10% full-width-at-half-maximum of the photopeak. The overall system sensitivity is about 0.5 x 10(-4) with the energy window of +/-10% from the photopeak. Line-phantom images are presented to visualize the spatial resolution provided by SemiSPECT, and images of bone, myocardium, and human tumor xenografts in mice demonstrate the feasibility of preclinical small-animal studies with SemiSPECT.

  11. SemiSPECT: A small-animal single-photon emission computed tomography (SPECT) imager based on eight cadmium zinc telluride (CZT) detector arrays

    PubMed Central

    Kim, Hyunki; Furenlid, Lars R.; Crawford, Michael J.; Wilson, Donald W.; Barber, H. Bradford; Peterson, Todd E.; Hunter, William C. J.; Liu, Zhonglin; Woolfenden, James M.; Barrett, Harrison H.

    2008-01-01

    The first full single-photon emission computed tomography (SPECT) imager to exploit eight compact high-intrinsic-resolution cadmium zinc telluride (CZT) detectors, called SemiSPECT, has been completed. Each detector consists of a CZT crystal and a customized application-specific integrated circuit (ASIC). The CZT crystal is a 2.7 cm × 2.7 cm × ~ 0.2 cm slab with a continuous top electrode and a bottom electrode patterned into a 64 × 64 pixel array by photolithography. The ASIC is attached to the bottom of the CZT crystal by indium-bump bonding. A bias voltage of −180 V is applied to the continuous electrode. The eight detectors are arranged in an octagonal lead-shielded ring. Each pinhole in the eight-pinhole aperture placed at the center of the ring is matched to each individual detector array. An object is imaged onto each detector through a pinhole, and each detector is operated independently with list-mode acquisition. The imaging subject can be rotated about a vertical axis to obtain additional angular projections. The performance of SemiSPECT was characterized using 99mTc. When a 0.5 mm diameter pinhole is used, the spatial resolution on each axis is about 1.4 mm as estimated by the Fourier crosstalk matrix, which provides an algorithm-independent average resolution over the field of view. The energy resolution achieved by summing neighboring pixel signals in a 3 × 3 window is about 10% full-width-at-half-maximum of the photopeak. The overall system sensitivity is about 0.5 × 10−4 with the energy window of ±10% from the photopeak. Line-phantom images are presented to visualize the spatial resolution provided by SemiSPECT, and images of bone, myocardium, and human tumor xenografts in mice demonstrate the feasibility of preclinical small-animal studies with SemiSPECT. PMID:16532954

  12. The state of the art of thin-film photovoltaics

    SciTech Connect

    Surek, T.

    1993-10-01

    Thin-film photovoltaic technologies, based on materials such as amorphous or polycrystalline silicon, copper indium diselenide, cadmium telluride, and gallium arsenide, offer the potential for significantly reducing the cost of electricity generated by photovoltaics. The significant progress in the technologies, from the laboratory to the marketplace, is reviewed. The common concerns and questions raised about thin films are addressed. Based on the progress to date and the potential of these technologies, along with continuing investments by the private sector to commercialize the technologies, one can conclude that thin-film PV will provide a competitive alternative for large-scale power generation in the future.

  13. Time-dependent toxicity of cadmium telluride quantum dots on liver and kidneys in mice: histopathological changes with elevated free cadmium ions and hydroxyl radicals.

    PubMed

    Wang, Mengmeng; Wang, Jilong; Sun, Hubo; Han, Sihai; Feng, Shuai; Shi, Lu; Meng, Peijun; Li, Jiayi; Huang, Peili; Sun, Zhiwei

    2016-01-01

    A complete understanding of the toxicological behavior of quantum dots (QDs) in vivo is of great importance and a prerequisite for their application in humans. In contrast with the numerous cytotoxicity studies investigating QDs, only a few in vivo studies of QDs have been reported, and the issue remains controversial. Our study aimed to understand QD-mediated toxicity across different time points and to explore the roles of free cadmium ions (Cd(2+)) and hydroxyl radicals (·OH) in tissue damage. Male ICR mice were administered a single intravenous dose (1.5 µmol/kg) of CdTe QDs, and liver and kidney function and morphology were subsequently examined at 1, 7, 14, and 28 days. Furthermore, ·OH production in the tissue was quantified by trapping · OH with salicylic acid (SA) as 2,3-dihydroxybenzoic acid (DHBA) and detecting it using a high-performance liquid chromatography fluorescence method. We used the induction of tissue metallothionein levels and 2,3-DHBA:SA ratios as markers for elevated Cd(2+) from the degradation of QDs and ·OH generation in the tissue, respectively. Our experimental results revealed that the QD-induced histopathological changes were time-dependent with elevated Cd(2+) and ·OH, and could recover after a period of time. The Cd(2+) and ·OH exhibited delayed effects in terms of histopathological abnormalities. Histological assessments performed at multiple time points might facilitate the evaluation of the biological safety of QDs.

  14. Left Ventricular Function Assessment Using 2 Different Cadmium-Zinc-Telluride Cameras Compared with a γ-Camera with Cardiofocal Collimators: Dynamic Cardiac Phantom Study and Clinical Validation.

    PubMed

    Bailliez, Alban; Lairez, Olivier; Merlin, Charles; Piriou, Nicolas; Legallois, Damien; Blaire, Tanguy; Agostini, Denis; Valette, Frederic; Manrique, Alain

    2016-09-01

    This study compared two SPECT cameras with cadmium-zinc-telluride (CZT) detectors to a conventional Anger camera with cardiofocal collimators for the assessment of left ventricular (LV) function in a phantom and patients. A gated dynamic cardiac phantom was used. Eighteen acquisitions were processed on each CZT camera and the conventional camera. The total number of counts within a myocardial volume of interest varied from 0.25 kcts to 1.5 Mcts. Ejection fraction was set to 33%, 45%, or 60%. Volume, LV ejection fraction (LVEF), regional wall thickening, and motion (17-segment model) were assessed. One hundred twenty patients with a low pretest likelihood of coronary artery disease and normal findings on stress perfusion SPECT were retrospectively analyzed to provide the reference limits for end-diastolic volume (EDV), end-systolic volume (ESV), ejection fraction, and regional function for each camera model. In the phantom study, for each ejection fraction value, volume was higher for the CZT cameras than for the conventional camera, resulting in a decreased but more accurate LVEF (all P < 0.001). In clinical data, body-surface-indexed EDV and ESV (mL/m(2)) were higher for one of the CZT cameras (Discovery NM 530c) than for the other (D-SPECT) or the conventional camera (respectively, 40.5 ± 9.2, 37 ± 7.9, and 35.8 ± 6.8 for EDV [P < 0.001] and 12.5 ± 5.3, 9.4 ± 4.2, and 8.3 ± 4.4 for ESV [P < 0.001]), resulting in a significantly decreased LVEF: 70.3% ± 9.1% vs. 75.2% ± 8.1% vs. 77.8% ± 9.3%, respectively (P < 0.001). The new CZT cameras yielded global LV function results different from those yielded by the conventional camera. LV volume was higher for the Discovery NM 530c than for the D-SPECT or the conventional camera, leading to decreased LVEF in healthy subjects. These differences should be considered in clinical practice and warrant the collection of a specific reference database. © 2016 by the Society of Nuclear Medicine and Molecular Imaging, Inc.

  15. Efficient and ultrafast formation of long-lived charge-transfer exciton state in atomically thin cadmium selenide/cadmium telluride type-II heteronanosheets.

    PubMed

    Wu, Kaifeng; Li, Qiuyang; Jia, Yanyan; McBride, James R; Xie, Zhao-xiong; Lian, Tianquan

    2015-01-27

    Colloidal cadmium chalcogenide nanosheets with atomically precise thickness of a few atomic layers and size of 10-100 nm are two-dimensional (2D) quantum well materials with strong and precise quantum confinement in the thickness direction. Despite their many advantageous properties, excitons in these and other 2D metal chalcogenide materials are short-lived due to large radiative and nonradiative recombination rates, hindering their applications as light harvesting and charge separation/transport materials for solar energy conversion. We showed that these problems could be overcome in type-II CdSe/CdTe core/crown heteronanosheets (with CdTe crown laterally extending on the CdSe nanosheet core). Photoluminesence excitation measurement revealed that nearly all excitons generated in the CdSe and CdTe domains localized to the CdSe/CdTe interface to form long-lived charge transfer excitons (with electrons in the CdSe domain and hole in the CdTe domain). By ultrafast transient absorption spectroscopy, we showed that the efficient exciton localization efficiency could be attributed to ultrafast exciton localization (0.64 ± 0.07 ps), which was facilitated by large in-plane exciton mobility in these 2D materials and competed effectively with exiton trapping at the CdSe or CdTe domains. The spatial separation of electrons and holes across the CdSe/CdTe heterojunction effectively suppressed radiative and nonradiative recombination processes, leading to a long-lived charge transfer exciton state with a half-life of ∼ 41.7 ± 2.5 ns, ∼ 30 times longer than core-only CdSe nanosheets.

  16. Time-dependent toxicity of cadmium telluride quantum dots on liver and kidneys in mice: histopathological changes with elevated free cadmium ions and hydroxyl radicals

    PubMed Central

    Wang, Mengmeng; Wang, Jilong; Sun, Hubo; Han, Sihai; Feng, Shuai; Shi, Lu; Meng, Peijun; Li, Jiayi; Huang, Peili; Sun, Zhiwei

    2016-01-01

    A complete understanding of the toxicological behavior of quantum dots (QDs) in vivo is of great importance and a prerequisite for their application in humans. In contrast with the numerous cytotoxicity studies investigating QDs, only a few in vivo studies of QDs have been reported, and the issue remains controversial. Our study aimed to understand QD-mediated toxicity across different time points and to explore the roles of free cadmium ions (Cd2+) and hydroxyl radicals (·OH) in tissue damage. Male ICR mice were administered a single intravenous dose (1.5 µmol/kg) of CdTe QDs, and liver and kidney function and morphology were subsequently examined at 1, 7, 14, and 28 days. Furthermore, ·OH production in the tissue was quantified by trapping · OH with salicylic acid (SA) as 2,3-dihydroxybenzoic acid (DHBA) and detecting it using a high-performance liquid chromatography fluorescence method. We used the induction of tissue metallothionein levels and 2,3-DHBA:SA ratios as markers for elevated Cd2+ from the degradation of QDs and ·OH generation in the tissue, respectively. Our experimental results revealed that the QD-induced histopathological changes were time-dependent with elevated Cd2+ and ·OH, and could recover after a period of time. The Cd2+ and ·OH exhibited delayed effects in terms of histopathological abnormalities. Histological assessments performed at multiple time points might facilitate the evaluation of the biological safety of QDs. PMID:27307732

  17. Recent advances in photovoltaics

    SciTech Connect

    Carlson, D.E.

    1995-12-31

    Photovoltaic energy conversion has been widely used for over three decades in the space program to power satellites and in the last two decades has also found widespread use in remote applications such as powering microwave communication repeaters, providing cathodic protection for wells and pipelines, pumping water in remote locations, etc. With continued improvements in performance and ongoing reductions in manufacturing costs, PV systems are expected to become cost effective for grid-connected applications in the next few years. While crystalline silicon technology accounts for the majority of the present PV business, new thin film PV technologies such as multifunction amorphous silicon, copper-indium-diselenide and cadmium telluride have progressed to a point where several companies are building multi-megawatt production facilities. High efficiency concentrator arrays may also prove to be cost effective for grid-connected applications in regions of the world with significant direct sunlight.

  18. High-throughput manufacturing of thin-film CdS/CdTe photovoltaic modules. Annual subcontract report, 16 September 1996--15 January 1998

    SciTech Connect

    Sandwisch, D.W.

    1998-08-01

    Cadmium telluride (CdTe) is recognized as one of the leading materials for low-cost photovoltaic modules. Solar Cells, Inc., has developed this technology and is scaling its pilot production capabilities to a multi-megawatt level. The Photovoltaic Manufacturing Technology (PVMaT) subcontract supports these efforts. Activities during the third phase of the program concentrated on process development, equipment design and testing, quality assurance, ES and H programs, and large-scale next-generation coating-system prototype development. These efforts broadly addressed the issues of the manufacturing process for producing thin-film, monolithic CdS/CdTe photovoltaic modules.

  19. Research on Mercury Cadmium Telluride

    DTIC Science & Technology

    1988-06-21

    EL2 in GaAs, which is generally attributed to As sitting on Ga sites, Asg. For binary compounds with similar sized constituents, possibility of the...found in the references. Most of these studies were performed on melt-grown bulk ,... CdTe. Heat treatments such as low temperature annealing has been...concentration. However, data from heat treatment ex- ,e periments should be examined with care since different adverse effects could have obscured the

  20. Mercury Cadmium Telluride Sputtering Research.

    DTIC Science & Technology

    1982-08-28

    Material Research Corporation 8800 sputtering system used to deposit the (Hhl.x,Cdx)Te thin films by the triode-ode is shown in Fig. 1-1.()* rotating...by Dr. Comely with Dr. Esther Krikorian of the Aerospace Corporation , El Segundo, California. 28) Ferrar, R.H., Gillham, C.J., Bartlett, B., Oualch, M...Chen. 14, 44 (1975). 44) Belov, V., Personal Commnication of Dr. Cornely with Dr. Valery Belov, Vice President of Engineering, Infrared Associates, Now

  1. Mercury Cadmium Telluride Sputtering Research.

    DTIC Science & Technology

    1981-06-01

    the sixteenth per cubic cm range. Similar results wereobtained using CdTeand Si substrates and for other compositions. For films with 0.18 CdTe mole...on silicon substrates were reproducible for the sputtering parameters used . Recent research has indicated ways to improve these as-deDosited film...square substrate) only one or two CdTe substrates were used in each deposition run. The main deposition parameters were: r.f. power applied to the target

  2. Material and detector properties of cadmium manganese telluride (Cd1-xMnxTe) crystals grown by the modified floating-zone method

    SciTech Connect

    Hossain, A.; Gu, G. D.; Bolotnikov, A. E.; Camarda, G. S.; Cui, Y.; Roy, U. N.; Yang, G.; Liu, T.; Zhong, R.; Schneelock, J.; James, R. B.

    2014-12-24

    We demonstrated the material- and radiation-detection properties of cadmium manganese telluride (Cd1-xMnxTe; x=0.06), a wide-band-gap semiconductor crystal grown by the modified floating-zone method. We investigated the presence of various bulk defects, such as Te inclusions, twins, and dislocations of several as-grown indium-doped Cd1-xMnxTe crystals using different techniques, viz., IR transmission microscopy, and chemical etching. We then fabricated four planar detectors from selected CdMnTe crystals, characterized their electrical properties, and tested their performance as room-temperature X- and gamma-ray detectors. Thus, our experimental results show that CMT crystals grown by the modified floating zone method apparently are free from Te inclusions. However, we still need to optimize our growth parameters to attain high-resistivity, large-volume single-crystal CdMnTe.

  3. Comparison of conventional and cadmium-zinc-telluride single-photon emission computed tomography for analysis of thallium-201 myocardial perfusion imaging: an exploratory study in normal databases for different ethnicities.

    PubMed

    Ishihara, Masaru; Onoguchi, Masahisa; Taniguchi, Yasuyo; Shibutani, Takayuki

    2017-06-29

    The aim of this study was to clarify the differences in thallium-201-chloride (thallium-201) myocardial perfusion imaging (MPI) scans evaluated by conventional anger-type single-photon emission computed tomography (conventional SPECT) versus cadmium-zinc-telluride SPECT (CZT SPECT) imaging in normal databases for different ethnic groups. MPI scans from 81 consecutive Japanese patients were examined using conventional SPECT and CZT SPECT and analyzed with the pre-installed quantitative perfusion SPECT (QPS) software. We compared the summed stress score (SSS), summed rest score (SRS), and summed difference score (SDS) for the two SPECT devices. For a normal MPI reference, we usually use Japanese databases for MPI created by the Japanese Society of Nuclear Medicine, which can be used with conventional SPECT but not with CZT SPECT. In this study, we used new Japanese normal databases constructed in our institution to compare conventional and CZT SPECT. Compared with conventional SPECT, CZT SPECT showed lower SSS (p < 0.001), SRS (p = 0.001), and SDS (p = 0.189) using the pre-installed SPECT database. In contrast, CZT SPECT showed no significant difference from conventional SPECT in QPS analysis using the normal databases from our institution. Myocardial perfusion analyses by CZT SPECT should be evaluated using normal databases based on the ethnic group being evaluated.

  4. Cadmium

    Integrated Risk Information System (IRIS)

    Cadmium ; CASRN 7440 - 43 - 9 Human health assessment information on a chemical substance is included in the IRIS database only after a comprehensive review of toxicity data , as outlined in the IRIS assessment development process . Sections I ( Health Hazard Assessments for Noncarcinogenic Effects

  5. Bis(3-methyl-2-pyridyl)ditelluride and pyridyl tellurolate complexes of zinc, cadmium, mercury: Synthesis, characterization and their conversion to metal telluride nanoparticles.

    PubMed

    Kedarnath, G; Jain, Vimal K; Wadawale, Amey; Dey, Gautam K

    2009-10-21

    Treatment of an acetonitrile solution of metal chloride with bis(3-methyl-2-pyridyl)ditelluride, [Te(2)(pyMe)(2)], in the same solvent yielded complexes of composition [MCl(2){Te(2)(pyMe)(2)}] (M = Zn or Cd) whereas reactions of [MCl(2)(tmeda)] with NaTepyR (R = H or Me) gave tellurolate complexes of the general formula [M(TepyR)(2)] (M = Cd or Hg). When the cadmium complex [Cd(Tepy)(2)] was crystallized in the presence of excess tmeda, [Cd(Tepy)(2)(tmeda)] was formed exclusively. These complexes were characterized by elemental analyses, uv-vis, (1)H NMR data. The crystal structures of [ZnCl(2){Te(2)(pyMe)(2)}] and [Cd(Tepy)(2)(tmeda)] were established by single crystal X-ray diffraction. In the former zinc is coordinated to nitrogen atoms of the pyridyl group, while in the latter the coordination environment around tetrahedral cadmium is defined by the two neutral nitrogen atoms of tmeda, and two pyridyl tellurolate ligands. Thermal behavior of some of these complexes was studied by thermogravimetric analysis. Pyrolysis of [M(Tepy)(2)] in a furnace or in coordinating solvents such as hexadecylamine/tri-n-octylphosphine oxide (HDA/TOPO) at 350 and 160 degrees C, respectively gave MTe nanoparticles, which were characterized by uv-vis, photoluminiscence, XRD, EDAX and TEM.

  6. Rapid-acquisition myocardial perfusion scintigraphy (MPS) on a novel gamma camera using multipinhole collimation and miniaturized cadmium-zinc-telluride (CZT) detectors: prognostic value and diagnostic accuracy in a 'real-world' nuclear cardiology service.

    PubMed

    Chowdhury, F U; Vaidyanathan, S; Bould, M; Marsh, J; Trickett, C; Dodds, K; Clark, T P R; Sapsford, R J; Dickinson, C J; Patel, C N; Thorley, P J

    2014-03-01

    To study the prognostic value of rapid-acquisition adenosine stress-rest myocardial perfusion scintigraphy (MPS) on a gamma camera using multipinhole collimation and cadmium-zinc-telluride (CZT) detectors. The secondary aim was to assess the diagnostic accuracy of the technique compared with invasive coronary angiography. Retrospective analysis of 1109 consecutive patients undergoing MPS in a routine clinical setting on a high-efficiency multipinhole gamma camera. MPS acquisition, performed with a standard injection of 550 MBq of (99m)Tc-tetrofosmin, required a mean (±SD) scanning time of 322 ± 51 s. The hard cardiac event rate at a median (inter-quartile range) follow-up of 624 (552-699) days was 0.4% (95% CI 0.1-1.1) in patients with no significant perfusion abnormality versus 6.8% (95% CI 4.3-10.7%, P < 0.001) in those with an abnormal scan. In a sub-group of 165 patients, comparison with obstructive coronary artery disease on X-ray angiography gave a sensitivity, specificity, positive predictive value, negative predictive value, and accuracy for rapid-acquisition MPS of 84% (95% CI 74-91), 79% (95% CI 68-87), 82% (95% CI 72-89), 81% (95% CI 70-89), and 82% (95% CI 73-89), respectively. MPS performed on a CZT solid-state detector camera with multipinhole collimation is an evolutionary development that provides reliable prognostic and diagnostic information, while significantly reducing image acquisition time.

  7. Embedded vertically aligned cadmium telluride nanorod arrays grown by one-step electrodeposition for enhanced energy conversion efficiency in three-dimensional nanostructured solar cells.

    PubMed

    Wang, Jun; Liu, Shurong; Mu, Yannan; Liu, Li; A, Runa; Yang, Jiandong; Zhu, Guijie; Meng, Xianwei; Fu, Wuyou; Yang, Haibin

    2017-11-01

    Vertically aligned CdTe nanorods (NRs) arrays are successfully grown by a simple one-step and template-free electrodeposition method, and then embedded in the CdS window layer to form a novel three-dimensional (3D) heterostructure on flexible substrates. The parameters of electrodeposition such as deposition potential and pH of the solution are varied to analyze their important role in the formation of high quality CdTe NRs arrays. The photovoltaic conversion efficiency of the solar cell based on the 3D heterojunction structure is studied in detail. In comparison with the standard planar heterojunction solar cell, the 3D heterojunction solar cell exhibits better photovoltaic performance, which can be attributed to its enhanced optical absorption ability, increased heterojunction area and improved charge carrier transport. The better photoelectric property of the 3D heterojunction solar cell suggests great application potential in thin film solar cells, and the simple electrodeposition process represents a promising technique for large-scale fabrication of other nanostructured solar energy conversion devices. Copyright © 2017 Elsevier Inc. All rights reserved.

  8. Cadmium Telluride Quantum Dots (CdTe-QDs) and Enhanced Ultraviolet-B (UV-B) Radiation Trigger Antioxidant Enzyme Metabolism and Programmed Cell Death in Wheat Seedlings

    PubMed Central

    Han, Rong

    2014-01-01

    Nanoparticles (NPs) are becoming increasingly widespread in the environment. Free cadmium ions released from commonly used NPs under ultraviolet-B (UV-B) radiation are potentially toxic to living organisms. With increasing levels of UV-B radiation at the Earth’s surface due to the depletion of the ozone layer, the potential additive effect of NPs and UV-B radiation on plants is of concern. In this study, we investigated the synergistic effect of CdTe quantum dots (CdTe-QDs), a common form of NP, and UV-B radiation on wheat seedlings. Graded doses of CdTe-QDs and UV-B radiation were tested, either alone or in combination, based on physical characteristics of 5-day-old seedlings. Treatments of wheat seedlings with either CdTe-QDs (200 mg/L) or UV-B radiation (10 KJ/m2/d) induced the activation of wheat antioxidant enzymes. CdTe-QDs accumulation in plant root cells resulted in programmed cell death as detected by DNA laddering. CdTe-QDs and UV-B radiation inhibited root and shoot growth, respectively. Additive inhibitory effects were observed in the combined treatment group. This research described the effects of UV-B and CdTe-QDs on plant growth. Furthermore, the finding that CdTe-QDs accumulate during the life cycle of plants highlights the need for sustained assessments of these interactions. PMID:25329900

  9. Cadmium telluride quantum dots (CdTe-QDs) and enhanced ultraviolet-B (UV-B) radiation trigger antioxidant enzyme metabolism and programmed cell death in wheat seedlings.

    PubMed

    Chen, Huize; Gong, Yan; Han, Rong

    2014-01-01

    Nanoparticles (NPs) are becoming increasingly widespread in the environment. Free cadmium ions released from commonly used NPs under ultraviolet-B (UV-B) radiation are potentially toxic to living organisms. With increasing levels of UV-B radiation at the Earth's surface due to the depletion of the ozone layer, the potential additive effect of NPs and UV-B radiation on plants is of concern. In this study, we investigated the synergistic effect of CdTe quantum dots (CdTe-QDs), a common form of NP, and UV-B radiation on wheat seedlings. Graded doses of CdTe-QDs and UV-B radiation were tested, either alone or in combination, based on physical characteristics of 5-day-old seedlings. Treatments of wheat seedlings with either CdTe-QDs (200 mg/L) or UV-B radiation (10 KJ/m(2)/d) induced the activation of wheat antioxidant enzymes. CdTe-QDs accumulation in plant root cells resulted in programmed cell death as detected by DNA laddering. CdTe-QDs and UV-B radiation inhibited root and shoot growth, respectively. Additive inhibitory effects were observed in the combined treatment group. This research described the effects of UV-B and CdTe-QDs on plant growth. Furthermore, the finding that CdTe-QDs accumulate during the life cycle of plants highlights the need for sustained assessments of these interactions.

  10. Photovoltaic devices comprising cadmium stannate transparent conducting films and method for making

    DOEpatents

    Wu, Xuanzhi; Coutts, Timothy J.; Sheldon, Peter; Rose, Douglas H.

    1999-01-01

    A photovoltaic device having a substrate, a layer of Cd.sub.2 SnO.sub.4 disposed on said substrate as a front contact, a thin film comprising two or more layers of semiconductor materials disposed on said layer of Cd.sub.2 SnO.sub.4, and an electrically conductive film disposed on said thin film of semiconductor materials to form a rear electrical contact to said thin film. The device is formed by RF sputter coating a Cd.sub.2 SnO.sub.4 layer onto a substrate, depositing a thin film of semiconductor materials onto the layer of Cd.sub.2 SnO.sub.4, and depositing an electrically conductive film onto the thin film of semiconductor materials.

  11. Photovoltaic devices comprising cadmium stannate transparent conducting films and method for making

    DOEpatents

    Wu, X.; Coutts, T.J.; Sheldon, P.; Rose, D.H.

    1999-07-13

    A photovoltaic device is disclosed having a substrate, a layer of Cd[sub 2]SnO[sub 4] disposed on said substrate as a front contact, a thin film comprising two or more layers of semiconductor materials disposed on said layer of Cd[sub 2]SnO[sub 4], and an electrically conductive film disposed on said thin film of semiconductor materials to form a rear electrical contact to said thin film. The device is formed by RF sputter coating a Cd[sub 2]SnO[sub 4] layer onto a substrate, depositing a thin film of semiconductor materials onto the layer of Cd[sub 2]SnO[sub 4], and depositing an electrically conductive film onto the thin film of semiconductor materials. 10 figs.

  12. Studies of rf sputtered zinc tellurium:nitrogen and cadmium sulfide for photovoltaic applications

    NASA Astrophysics Data System (ADS)

    Drayton, Jennifer

    Photovoltaics based on thin film semiconductors are a renewable energy source with possible widespread applications. Semiconducting thin films from the II-VI family have the capability of being excellent candidates for this application as they are n-type, like CdS, which can be used with CdTe, another II-VI material which is p-type, to form a p-n junction. Other II-VI materials can be doped p-type, as in the case of ZnTe:N, which can be used as part of a back contact to a CdTe-based single junction solar cell and also as part of a recombination junction in a CdTe-based tandem solar cell. This dissertation investigates the properties of reactively rf sputtered ZnTe:N films and examines structures that utilize ZnTe:N as part of a back contact or as part of a recombination junction. The use of optical emission spectroscopy to determine which excited species of the N2 molecule are present in the plasma during reactive sputtering of ZnTe:N is also investigated. The use of optical emission spectroscopy as a diagnostic tool to monitor film quality by identifying contaminants in the sputtering system is also presented. The optimization of deposition parameters for CdTe, CdS, and ZnTe:N films fabricated in a new deposition system is presented. The effort to improve the CdS layer by increasing its resistivity is explored. By changing the deposition parameters but not adding any dopant we attempted to deposit highly resistive polycrystalline CdS. The resistivity measurements led to the discovery that CdS exhibits piezoelectric properties when used in CdTe-based photovoltaics. These important properties, which had not been observed previously, will be presented and discussed.

  13. Module process optimization and device efficiency improvement for stable, low-cost, large-area, cadmium telluride-based photovoltaic module production

    SciTech Connect

    Albright, S.P.; Ackerman, B.; Chamberlin, R.R.; Jordan, J.F. )

    1992-04-01

    This report describes work under a three-year phased subcontract to develop CdS/CdTe devices and modules and to further improve the technology base at Photon Energy, Inc. (PEI) to better address the commercialization issues and objectives of the PEI and the US Department of Energy. During this reporting period we (1) achieved efficiencies of 12.7% on small area devices, (2) achieved 1-ft{sup 2} modules with over 8% aperture-area efficiency (and active area efficiencies up to {approximately}10%), (3) tested 4-ft{sup 2} modules at NREL at 23.1 (21.3) watts, normalized (6.3% efficiency), and (4) found no inherent stability problems with CdTe technology during life testing, at both NREL and PEI. 7 refs.

  14. Evaluation of critical materials in five additional advance design photovoltaic cells

    SciTech Connect

    Smith, S.A.; Watts, R.L.; Martin, P.; Gurwell, W.E.

    1981-02-01

    The objective of this study is to identify potential material supply constraints due to the large-scale deployment of five advanced photovoltaic (PV) cell designs, and to suggest strategies to reduce the impacts of these production capacity limitations and potential future material shortages. The Critical Materials Assessment Program (CMAP) screens the designs and their supply chains and identifies potential shortages which might preclude large-scale use of the technologies. The results of the screening of five advanced PV cell designs are presented: (1) indium phosphide/cadmium sulfide, (2) zinc phosphide, (3) cadmium telluride/cadmium sulfide, (4) copper indium selenium, and (5) cadmium selenide photoelectrochemical. Each of these five cells is screened individually assuming that they first come online in 1991, and that 25 Gwe of peak capacity is online by the year 2000. A second computer screening assumes that each cell first comes online in 1991 and that each cell has a 5 GWe of peak capacity by the year 2000, so that the total online capacity for the five cells is 25 GWe. Based on a review of the preliminary baseline screening results, suggestions were made for varying such parameters as the layer thickness, cell production processes, etc. The resulting PV cell characterizations were then screened again by the CMAP computer code. The CMAP methodology used to identify critical materials is described; and detailed characterizations of the advanced photovoltaic cell designs under investigation, descriptions of additional cell production processes, and the results are presented. (WHK)

  15. Development of a practical method of estimating electric power from various photovoltaic technologies with high precision

    NASA Astrophysics Data System (ADS)

    Ishii, Tetsuyuki; Sato, Ritsuko; Choi, Sungwoo; Chiba, Yasuo; Masuda, Atsushi

    2017-08-01

    The purpose of this study is to develop a method of estimating the electric power from various photovoltaic technologies with high precision. The actual outdoor performance of eight kinds (12 types) of photovoltaic (PV) modules has been measured since January 2012 in order to verify the precision of the method. Using ambient climatic datasets including solar irradiance, module temperature, and solar spectrum, the performance of these PV modules is corrected to the performance under standard test conditions (STC), which should be constant ideally. The results indicate that the performance of bulk crystalline silicon (c-Si) and copper indium gallium diselenide (CIGS) PV modules can be estimated with high precision (approximately less than ±2%). However, the estimation precision of thin-film Si and cadmium telluride (CdTe) PV modules is low because of the initial light-induced degradation and seasonal variation due to metastability.

  16. Research support for cadmium telluride crystal growth

    NASA Technical Reports Server (NTRS)

    Rosenberger, Franz

    1995-01-01

    The growth of single crystals of zinc selenide was carried out by both closed ampoule physical vapor transport and effusive ampoule physical vapor transport (EAPVT). The latter technique was shown to be a much more efficient method for the seeded growth of zinc selenide, resulting in higher transport rates. Furthermore, EAPVT work on CdTe has shown that growth onto (n 11) seeds is advantageous for obtaining reduced twinning and defect densities in II-VI sphalerite materials.

  17. Synthesis and characterization of cadmium telluride nanowire.

    PubMed

    Kum, Maxwell C; Yoo, Bong Young; Rheem, Young Woo; Bozhilov, Krassimir N; Chen, Wilfred; Mulchandani, Ashok; Myung, Nosang V

    2008-08-13

    CdTe nanowires with controlled composition were cathodically electrodeposited using track-etched polycarbonate membrane as scaffolds and their material and electrical properties were systematically investigated. As-deposited CdTe nanowires show nanocrystalline cubic phase structures with grain sizes of up to 60 nm. The dark-field images of nanowires reveal that the crystallinity of nanowires was greatly improved from nanocrystalline to a few single crystals within nanowires upon annealing at 200 °C for 6 h in a reducing environment (5% H(2)+95% N(2)). For electrical characterization, a single CdTe nanowire was assembled across microfabricated gold electrodes using the drop-casting method. In addition to an increase in grain size, the electrical resistivity of an annealed single nanowire (a few 10(5) Ω cm) was one order of magnitude greater than in an as-deposited nanowire, indicating that crystallinity of nanowires improved and defects within nanowires were reduced during annealing. By controlling the dopants levels (e.g. Te content of nanowires), the resistivity of nanowires was varied from 10(4) to 10(0) Ω cm. Current-voltage (I-V) characteristics of nanowires indicated the presence of Schottky barriers at both ends of the Au/CdTe interface. Temperature-dependent I-V measurements show that the electron transport mode was determined by a thermally activated component at T>-50 °C and a temperature-independent component below -50 °C. Under optical illumination, the single CdTe nanowire exhibited enhanced conductance.

  18. Growth and Application of Cadmium Telluride.

    DTIC Science & Technology

    1980-01-01

    photoconductive bodies or infra-red telescopes , image intensifiers, camera tubes, photoelectric cells, X-ray dosimeters and the like." So even by 1959 there...This consists of a stationary heater with a motorised pulley system which provides for movement of the CdTe charge relative to the heater. The furnace

  19. Alloys in cadmium telluride solar cells

    NASA Astrophysics Data System (ADS)

    Jensen, Douglas Garth

    Alloys formed intentionally or unintentionally during the fabrication of CdTe/CdS solar cells were investigated. The primary focuses were (1) characterizing thin films of CdTesb{1-x}Ssb{x} since these alloys appear to be present in all high-efficiency CdTe/CdS solar cells, and (2) investigating how these alloys affect solar cell performance. Thin films of CdTesb{1-x}Ssb{x} were fabricated and subjected to heat treatments under conditions identical to those used for making CdTe/CdS solar cells. The films were characterized by X-Ray Diffraction, Energy Dispersive Spectroscopy, Scanning Electron Microscopy, and optical measurements. The as-deposited CdTesb{1-x}Ssb{x} films were generally single-phase even when x was well within the miscibility gap shown on CdTe-CdS pseudo-binary phase diagrams. Heat treatments at 415sp°C in the presence of CdClsb2 promoted phase segregation. From diffraction analysis of the phase-segregated films, the solubility limits at 415sp°C of CdS in CdTe, and of CdTe in CdS were found to be 5.8± 0.2% and 3± 1%, respectively. Conventional CdTe/CdS solar cells and novel solar cells made by depositing CdTesb{1-x}Ssb{x}, in place of CdTe were fabricated, tested, characterized, and compared. For the conventional solar cells, diffusion of CdS into the CdTe layer during the fabrication process converted the CdTe to CdTesb{1-x}Ssb{x} with x ranging from the 5.8% solubility limit near the junction to {<}1% near the back contact. Similarly, the CdS layer was converted to CdSsb{1-y}Tesb{y} with y near the 3% solubility limit, in some cases, and {<}1% in cases where the CdS film was annealed with CdClsb2 prior to depositing CdTe. The performance of CdTesb{1-x}Ssb{x}/CdS cells made with x = 0.05-0.06 throughout the absorber layer was nearly identical to the CdTe/CdS cells. This indicates that the operation of conventional devices is largely controlled by the alloys formed by interdiffusion. For the CdTesb{1-x}Ssb{x}/CdS devices, less CdS was consumed by the interdiffusion process than for the conventional CdTe/CdS devices suggesting that devices can be made using thinner CdS layers than before possible without pinholes forming in the CdS.

  20. Electron Microscope Studies of Cadmium Mercury Telluride

    NASA Astrophysics Data System (ADS)

    Lyster, Martin

    Available from UMI in association with The British Library. Requires signed TDF. Epitaxial layers of Cd_{x }Hg_{(1-x)}Te grown on various substrates by liquid phase epitaxy and metallo-organic vapour phase epitaxy have been studied using transmission and scanning electron microscopy, in a variety of contrast modes. Wavelength-dispersive X-ray microanalysis has been used to study interfaces in epitaxial specimens, and the results are used to derive diffusion coefficients for a range of values of x in Cd_ {x}Hg_{(1-x)} Te. Extensive use has been made of back-scattered electron contrast in the SEM as a means of compositional mapping, and defect structures are imaged by this technique. The back-scattered electron contrast at interfaces has been studied in detail and is modelled using the Monte Carlo approach. The modelling is combined with calculations and practical measurements of the probe size in the SEM instrument used in the work, to arrive at a quantitative explanation of this contrast. The SEM and scintillator detector used allow a spatial resolution of better than 1000A, but it is shown that improvements in this are possible with present technology. Scanning infra-red microscopy (SIRM) and high -resolution transmission electron microscopy (HREM) have been applied to the study of CdTe. SIRM images reveal information about Te precipitation, including particle size and density. HREM images provide results concerning dislocation structures in CdTe. Selected-area diffraction contrast TEM results are presented which illustrate the microstructure of LPE and MOVPE material; and TEM foil preparation techniques are discussed, including the choice of ion species for milling cross-sectional specimens. In view of the results obtained, suggestions are made for future work in this field.

  1. Monte Carlo Simulation of Mercury Cadmium Telluride

    DTIC Science & Technology

    1994-07-01

    7540-01-280-5500 .. I. Standard Form 298 (Rev 2-89) Prescribed by ANSI Std Z39-18 298-102 Researchers derived expressions for scattering rates for...updated the distribution function, the screening length, and scattering rate table each 140 fsec , by collecting data from all carriers during this...related to hot electrons are confined to the central valley where the electron wave function and dispersion law can be described in the frame of the Kane

  2. Towards sustainable photovoltaics: the search for new materials.

    PubMed

    Peter, L M

    2011-05-13

    The opportunities for photovoltaic (PV) solar energy conversion are reviewed in the context of projected world energy demands for the twenty-first century. Conventional single-crystal silicon solar cells are facing increasingly strong competition from thin-film solar cells based primarily on polycrystalline absorber materials, such as cadmium telluride (CdTe) and copper indium gallium diselenide (CIGS). However, if PVs are to make a significant contribution to satisfy global energy requirements, issues of sustainability and cost will need to be addressed with increased urgency. There is a clear need to expand the range of materials and processes that is available for thin-film solar cell manufacture, placing particular emphasis on low-energy processing and sustainable non-toxic raw materials. The potential of new materials is exemplified by copper zinc tin sulphide, which is emerging as a viable alternative to the more toxic CdTe and the more expensive CIGS absorber materials.

  3. Energize Your Photovoltaics: NREL's Process Development and Integration Laboratory (PDIL)

    SciTech Connect

    Not Available

    2008-04-01

    The Process Development and Integration Laboratory (PDIL) at the National Renewable Energy Laboratory (NREL) is a unique collaborative facility where industry and universities can work closely with NREL scientists on integrated equipment to answer pressing questions related to photovoltaics (PV). The integrated equipment includes deposition, processing, and characterization tools. We work with a wide range of PV materials, from crystalline silicon to thin-films (amorphous, nano- and microcrystalline silicon, copper indium gallium diselenide, cadmium telluride) to organic PV. The PDIL integrates all the data to: Automate control via recipes; Share data easily and securely; and Facilitate analysis. The PDIL integrates all the tools to: Eliminate air exposure between steps; Sequence steps in any order ; and Incorporate combinatorial techniques. The PDIL integrates all the materials to: Provide greater device flexibility; Allow diverse experts to work together; and Better support industry and universities.

  4. Process for making photovoltaic devices and resultant product

    SciTech Connect

    Foote, J.B.; Kaake, S.A.F.; Meyers, P.V.; Nolan, J.F.

    1996-07-16

    A process and apparatus are disclosed for making a large area photovoltaic device that is capable of generating low cost electrical power. The apparatus for performing the process includes an enclosure providing a controlled environment in which an oven is located. At least one and preferably a plurality of deposition stations provide heated vapors of semiconductor material within the oven for continuous elevated temperature deposition of semiconductor material on a sheet substrate including a glass sheet conveyed within the oven. The sheet substrate is conveyed on a roller conveyor within the oven and the semiconductor material whose main layer is cadmium telluride is deposited on an upwardly facing surface of the substrate by each deposition station from a location within the oven above the roller conveyor. A cooling station rapidly cools the substrate after deposition of the semiconductor material thereon to strengthen the glass sheet of the substrate. 10 figs.

  5. Process for making photovoltaic devices and resultant product

    SciTech Connect

    Foote, J.B.; Kaake, S.A.F.; Meyers, P.V.; Nolan, J.F.

    1995-11-28

    A process and apparatus are disclosed for making a large area photovoltaic device that is capable of generating low cost electrical power. The apparatus for performing the process includes an enclosure providing a controlled environment in which an oven is located. At least one and preferably a plurality of deposition stations provide heated vapors of semiconductor material within the oven for continuous elevated temperature deposition of semiconductor material on a sheet substrate including a glass sheet conveyed within the oven. The sheet substrate is conveyed on a roller conveyor within the oven and the semiconductor material whose main layer is cadmium telluride is deposited on an upwardly facing surface of the substrate by each deposition station from a location within the oven above the roller conveyor. A cooling station rapidly cools the substrate after deposition of the semiconductor material thereon to strengthen the glass sheet of the substrate. 10 figs.

  6. NREL preprints for the 23rd IEEE Photovoltaic Specialists Conference

    SciTech Connect

    Fitzgerald, M.

    1993-05-01

    Topics covered include various aspects of solar cell fabrication and performance. Aluminium-gallium arsenides, cadmium telluride, amorphous silicon, and copper-indium-gallium selenides are all characterized in their applicability in solar cells.

  7. Apparatus for making photovoltaic devices

    DOEpatents

    Foote, James B.; Kaake, Steven A. F.; Meyers, Peter V.; Nolan, James F.

    1994-12-13

    A process and apparatus (70) for making a large area photovoltaic device (22) that is capable of generating low cost electrical power. The apparatus (70) for performing the process includes an enclosure (126) providing a controlled environment in which an oven (156) is located. At least one and preferably a plurality of deposition stations (74,76,78) provide heated vapors of semiconductor material within the oven (156) for continuous elevated temperature deposition of semiconductor material on a sheet substrate (24) including a glass sheet (26) conveyed within the oven. The sheet substrate (24) is conveyed on a roller conveyor (184) within the oven (156) and the semiconductor material whose main layer (82) is cadmium telluride is deposited on an upwardly facing surface (28) of the substrate by each deposition station from a location within the oven above the roller conveyor. A cooling station (86) rapidly cools the substrate (24) after deposition of the semiconductor material thereon to strengthen the glass sheet of the substrate.

  8. Printed interconnects for photovoltaic modules

    SciTech Connect

    Fields, J. D.; Pach, G.; Horowitz, K. A. W.; Stockert, T. R.; Woodhouse, M.; van Hest, M. F. A. M.

    2017-01-01

    Film-based photovoltaic modules employ monolithic interconnects to minimize resistance loss and enhance module voltage via series connection. Conventional interconnect construction occurs sequentially, with a scribing step following deposition of the bottom electrode, a second scribe after deposition of absorber and intermediate layers, and a third following deposition of the top electrode. This method produces interconnect widths of about 300 um, and the area comprised by interconnects within a module (generally about 3%) does not contribute to power generation. The present work reports on an increasingly popular strategy capable of reducing the interconnect width to less than 100 um: printing interconnects. Cost modeling projects a savings of about $0.02/watt for CdTe module production through the use of printed interconnects, with savings coming from both reduced capital expense and increased module power output. Printed interconnect demonstrations with copper-indium-gallium-diselenide and cadmium-telluride solar cells show successful voltage addition and miniaturization down to 250 um. Material selection guidelines and considerations for commercialization are discussed.

  9. Printed interconnects for photovoltaic modules

    DOE PAGES

    Fields, J. D.; Pach, G.; Horowitz, K. A. W.; ...

    2016-10-21

    Film-based photovoltaic modules employ monolithic interconnects to minimize resistance loss and enhance module voltage via series connection. Conventional interconnect construction occurs sequentially, with a scribing step following deposition of the bottom electrode, a second scribe after deposition of absorber and intermediate layers, and a third following deposition of the top electrode. This method produces interconnect widths of about 300 µm, and the area comprised by interconnects within a module (generally about 3%) does not contribute to power generation. The present work reports on an increasingly popular strategy capable of reducing the interconnect width to less than 100 µm: printing interconnects.more » Cost modeling projects a savings of about $0.02/watt for CdTe module production through the use of printed interconnects, with savings coming from both reduced capital expense and increased module power output. Printed interconnect demonstrations with copper-indium-gallium-diselenide and cadmium-telluride solar cells show successful voltage addition and miniaturization down to 250 µm. As a result, material selection guidelines and considerations for commercialization are discussed.« less

  10. Ternary spinel cadmium stannate, cadmium indate, and zinc stannate and binary tin oxide and indium oxide transparent conducting oxides as front contact materials for cadmium sulfide/cadmium tellurium photovoltaic devices

    NASA Astrophysics Data System (ADS)

    Mamazza, Robert, Jr.

    Transparent conducting oxides (TCO's) of Cd2SnO 4 (cadmium stannate), CdIn2O4 (cadmium indate), and Zn2SnO4 (zinc stannate) thin films were investigated from a materials and applications point of view through. All films were deposited by co-sputtering using either binary oxide or metallic (reactive sputtering) targets. The film properties were investigated as a function of film composition and stoichiometry. The effect of process parameters such as deposition temperatures, and post-deposition heat treatments on the structural and electro-optical properties of the films were also investigated extensively. All as-deposited films were found to be amorphous independent of substrate deposition temperature. The electro-optical and crystallographic properties were heavily dependant on the post deposition heat treatments. Cd2SnO4, Zn 2SnO4, and CdIn2O4 all produced highly transparent films with average transmission values (400--900 nm range) of 92%, 93%, and 90%, respectively. Cd2SnO4 and CdIn 2O4 were highly conductive with resistivity values as low as 2.01 x 10-4 O-cm and 2.90 x 10 -4 O-cm, respectively. Conversely, Zn2SnO 4 was not able to produce highly conductive films, with the lowest resistivity being 4.3 x 10-3 O-cm. CdTe solar cells were fabricated using al the above materials as front contacts or as high-ρ layers in bi-layer structures. All cells were of the superstrate configuration: Low-ρ TCO/high-ρ TCO/CdS/CdTe/Back contact. Only the TCO layers were varied; the remainder of the device was held constant. In most cases the inclusion of a high-ρ TCO layer was found to improve solar cell performance, especially in regard to the open circuit voltage. Cd2SnO4 was the exception. The incorporation of Zn2SnO4 as a high-ρ layer enabled a greatest current collection from high energy wavelengths through an apparent thinning effect on the CdS. This increased the overall short circuit current density to values in excess of 24.9 mA/cm2. The standard device consisted of

  11. Solar Photovoltaic Cells.

    ERIC Educational Resources Information Center

    Mickey, Charles D.

    1981-01-01

    Reviews information on solar radiation as an energy source. Discusses these topics: the key photovoltaic material; the bank theory of solids; conductors, semiconductors, and insulators; impurity semiconductors; solid-state photovoltaic cell operation; limitations on solar cell efficiency; silicon solar cells; cadmium sulfide/copper (I) sulfide…

  12. Solar Photovoltaic Cells.

    ERIC Educational Resources Information Center

    Mickey, Charles D.

    1981-01-01

    Reviews information on solar radiation as an energy source. Discusses these topics: the key photovoltaic material; the bank theory of solids; conductors, semiconductors, and insulators; impurity semiconductors; solid-state photovoltaic cell operation; limitations on solar cell efficiency; silicon solar cells; cadmium sulfide/copper (I) sulfide…

  13. UV Photo-Enhanced MOCVD of Cadmium and Cadmium Telluride

    DTIC Science & Technology

    1988-04-01

    to be incorporated into the CMT layer. Further work by Irvine et al.(14 ) showed that other factors influencing the composition included the alkyl...layers was heavily influenced by the substrate preparation and this was found to be the limiting factor in many cases. 2.2.2 Indium antimonide (InSb...than 3500C. Deposition onto glass substrates indicated that the UV also influenced the orientation of the ZnSe, which grew with a preferred

  14. Studies of Sputtered Cadmium Telluride and Cadmium Selenide Solar Cells

    NASA Astrophysics Data System (ADS)

    Kwon, Dohyoung

    CdTe has recently become the most commercially successful polycrystalline thinfilm solar module material. Its low cost, large-area solar module is reshaping the silicondominated solar panel market; however, CdTe has much room to improve and thus more fundamental understanding is needed. Current thin film solar cell research is focused on two areas: One is identifying loss mechanisms and understanding the polycrystalline nature of single junction device to improve device performance. Another is searching for new materials and fabricating tandem solar cells. In this study, along with other people's work to improve the efficiency of CdTe solar module, I studied loss mechanism and growth mode of CdTe solar cells to have fundamental understanding of polycrystalline films. In addition to that, in an effort to make tandem solar cells, I fabricated and characterized CdSe solar cells, which is considered as an ideal candidate for the top cell with its band gap of 1.7 eV. This dissertation is designed to show similarities and differences between CdTe and CdSe solar cells, side by side. After the introduction (Chapter1), I will review the physical properties of CdTe and CdSe solar cells (Chapter 2). Two primary tools to study defects and surface morphology were photoluminescence (PL) and atomic force microscopy (AFM). PL showed information on the crystallinity and defects of CdTe and CdSe films before and after annealing.(Chapter 3). AFM measurements and their analysis using scaling theory revealed information on the growth modes of CdTe and CdSe films.(Chapter 4). With the goal of exploring suitability for tandem structures with ˜1.7 eV top cell and ˜1.1 eV bottom cell, I fabricated and characterized single-junction CdSe devices. (Chapter 5) In addition, for the bottom cell I fabricated HgCdTe cells with Eg˜1.1 eV. Single junction HgCdTe and two-terminal CdTe/HgCdTe tandem solar cells were fabricated and characterized. (Chapter 5)

  15. Cadmium Telluride, Cadmium Telluride/Cadmium Sulfide Core/Shell, and Cadmium Telluride/Cadmium Sulfide/Zinc Sulfide Core/Shell/Shell Quantum Dots Study

    NASA Astrophysics Data System (ADS)

    Yan, Yueran

    CdTe, CdTe/CdS core/shell, and CdTe/CdS/ZnS core/shell/shell quantum dots (QDs) are potential candidates for bio-imaging and solar cell applications because of some special physical properties in these nano materials. For example, the band gap energy of the bulk CdTe is about 1.5 eV, so that principally they can emit 790 nm light, which is in the near-infrared range (also called biological window). Moreover, theoretically hot exciton generated by QDs is possible to be caught since the exciton relaxation process in QDs is slower than in bulk materials due to the large intraband energy gap in QDs. In this dissertation, we have synthesized the CdTe and CdTe/CdS core/shell QDs, characterized their structure, and analyzed their photophysical properties. We used organometallic methods to synthesize the CdTe QDs in a noncoordinating solvent. To avoid being quenched by air, ligands, solvent, or other compounds, CdS shell was successfully deposited on the CdTe QDs by different methods, including the slow injection method, the successive ion layer adsorption and reaction (SILAR) method, and thermal-cycling coupled single precursor method (TC-SP). Our final product, quasi-type- II CdTe/CdS core/shell QDs were able to emit at 770 nm with a fluorescence quantum yield as high as 70%. We also tried to deposit a second shell ZnS on CdTe/CdS core/shell QDs since some compounds can quench CdTe/CdS core/shell QDs. Even though different methods were used to deposit ZnS shell on the CdTe/CdS core/shell QDs, CdTe/CdS/ZnS core/shell/shell QDs still can be quenched. Furthermore, the CdTe/CdS core/shell and CdTe/CdS/ZnS core/shell/shell QDs were transferred into aqueous phase, phosphate buffered saline or deionized water, by switching the hydrophilic ligands (thiol or PEG ligands). The thioglycolic acid (TGA)-capped CdTe/CdS core/shell QDs can be kept in aqueous phase with high fluorescence quantum yield (60%--70%) for more than two months. However, some other compounds in organic or aqueous phase can quench CdTe/CdS QDs. Additionally, the stability of the different ligands capped CdTe/CdS QDs was tested by dialysis measurement, the hydrodynamic diameters of CdTe and CdTe/CdS core/shell QDs were measured by dynamic light scattering, and dissolving issue was found when CdTe and CdTe/CdS core/shell QDs were diluted in CHCl3. We have characterized the CdTe core and the CdTe/CdS core/shell QDs by powder X-ray diffraction (XRD), transmission electron microscopy (TEM), small angle X-ray scattering (SAXS), and ICP-OES measurements. We have found that the CdTe core was of a zincblende structure, and the shell was a wurtzite structure. And the CdTe/CdS QDs were core/shell QDs instead of alloying QDs. We have also analyzed the photophysical properties of CdTe and CdTe/CdS core/shell QDs. Time-resolved photoluminescence (PL) measurements showed the emission decay lifetimes in the tens of nanoseconds. Additionally, ultrafast charge carrier relaxation dynamics of the CdTe core and CdTe/CdS core/shell QDs were studied by the femtosecond transient absorption (TA) spectroscopy. The transient absorption spectra of CdTe and CdTe/CdS core/shell QDs showed multiple bleaches, which have been assigned to the 1S3/2(h)-1S(e), 2S3/2(h)-1S(e), and 1P3/2(h)-1P(e) transitions. The spectral shifts of these bleaches after shell deposition have been analyzed in the context of a quasi-type-II carrier distribution in the core/shell samples, and interestingly the red shift was only contributed from the conduction band energy levels shifting to lower energy. In addition, the ultrafast evolution of these bleach features has been examined to extract electron cooling rates in these samples. A fast decay component in the 1S3/2(h)-1S(e) transition of the small CdTe QDs was discovered due to the hole being trapped by the defects on the surface of QD. Further, we have studied the PL quenching process of the air exposed CdTe QDs via the PL decay and transient absorption measurements. Oxygen was shown to cause strong PL quenching of the CdTe QDs. There was no significant difference of the PL decay lifetimes between the CdTe QDs under argon and air, but a fast decay lifetime of 2.6 ps was observed in transient absorption data, indicating that the quenching process happened in a very short time scale (˜ 2.6 ps).

  16. Mechanics of cadmium telluride-zinc telluride nucleation on (112) Si for mercury cadmium telluride infrared photo-diode arrays

    NASA Astrophysics Data System (ADS)

    Dhar, Nibir Kumar

    Epitaxy of CdTe/ZnTe on the extremely large lattice mismatched Si leads to high density of dislocations, multi-domain facets, rough surface morphology, and often Cd-terminated surface polarity. These problems, related to the mode of nucleation and growth, limit its application to manufacture improved HgCdTe based large area infrared focal plane arrays. Thermo-kinetics of ZnTe nucleation on "atomically" clean, and arsenic modified nominal and vicinal (112) Si surfaces were investigated in a molecular beam epitaxy system. Transition state theory was invoked to understand and model ZnTe nucleation processes. Thin ZnTe templates were fabricated by: (1) migration enhanced epitaxy (MEE), and (2) crystallized amorphous deposits for relaxed epitaxy (CADRE) procedure developed in this research. MBE CdTe/ZnTe/Si structures were characterized, and used to make improved HgCdTe detector arrays. MEE ZnTe nucleation produced small, but misoriented islands. Nucleation involved dissociative adsorption of Tesb2 into highly immobile chemisorbed atoms, with Si-Te covalent bond energy of 3.46 ± 0.1 eV. CdTe layers were heavily twinned, with high dislocation densities, and crystallographic facets; surface morphologies were rough, and exhibited temperature dependent polarity transformation. The CADRE process led to polycrystalline CdTe/ZnTe structures. MEE ZnTe growth on As-terminated Si surfaces was initially by Stranski-Krastanaw mode via chemisorption of tellurium atoms which produced (2sqrt{3} x 2sqrt{3})R30 reconstructed surfaces. The CADRE process did not involve island nucleation. CdTe layers deposited on ZnTe templates prepared by MEE and CADRE were Te-terminated, with extremely good morphologies. For nominal Si, twin concentrations were two orders of magnitude lower than in equivalent structures grown on "atomically" clean Si surfaces. Twin free CdTe layers with dislocation densities in the range of 1-5 × 10sp5 cmsp{-2} were obtained by the CADRE technique. A model is proposed, suggesting growth nucleates on and propagates two dimensionally along step edges. The present study treats the mechanics of ZnTe nucleation on Si. The associated kinetic barriers can be tailored to improve epitaxy. An improved HgCdTe planar heterojunction p/n infrared photodiode array was fabricated using the new CADRE technique.

  17. Hafnium germanium telluride

    PubMed Central

    Jang, Gyung-Joo; Yun, Hoseop

    2008-01-01

    The title hafnium germanium telluride, HfGeTe4, has been synthesized by the use of a halide flux and structurally characterized by X-ray diffraction. HfGeTe4 is isostructural with stoichiometric ZrGeTe4 and the Hf site in this compound is also fully occupied. The crystal structure of HfGeTe4 adopts a two-dimensional layered structure, each layer being composed of two unique one-dimensional chains of face-sharing Hf-centered bicapped trigonal prisms and corner-sharing Ge-centered tetra­hedra. These layers stack on top of each other to complete the three-dimensional structure with undulating van der Waals gaps. PMID:21202163

  18. NREL photovoltaic subcontract reports: Abstracts and document control information, 1 August 1991--31 July 1992

    SciTech Connect

    Not Available

    1992-08-01

    This report contains document control information and abstracts for the National Renewable Energy Laboratory (NREL) subcontracted photovoltaic program publications. It also lists source information on additional publications that describe US Department of Energy (DOE) PV research activities. It is not totally exhaustive, so it lists NREL contacts for requesting further information on the DOE and NREL PV programs. This report covers the period from August 1, 1991, through July 31, 1992. The purpose of continuing this type of publication is to help people keep abreast of specific PV interests, while maintaining a balance on the costs to the PV program. The information in this report is organized under PV technology areas: Amorphous silicon research; polycrystalline thin films (including copper indium diselenide, cadmium telluride, and thin-film silicon); crystalline materials and advanced concepts (including silicon, gallium arsenide, and other group III-V materials); and PV manufacturing technology development (which may include manufacturing information for various types of PV materials).

  19. Optimization of material/device parameters of CdTe photovoltaic for solar cells applications

    NASA Astrophysics Data System (ADS)

    Wijewarnasuriya, Priyalal S.

    2016-05-01

    Cadmium telluride (CdTe) has been recognized as a promising photovoltaic material for thin-film solar cell applications due to its near optimum bandgap of ~1.5 eV and high absorption coefficient. The energy gap is near optimum for a single-junction solar cell. The high absorption coefficient allows films as thin as 2.5 μm to absorb more than 98% of the above-bandgap radiation. Cells with efficiencies near 20% have been produced with poly-CdTe materials. This paper examines n/p heterostructure device architecture. The performance limitations related to doping concentrations, minority carrier lifetimes, absorber layer thickness, and surface recombination velocities at the back and front interfaces is assessed. Ultimately, the paper explores device architectures of poly- CdTe and crystalline CdTe to achieve performance comparable to gallium arsenide (GaAs).

  20. Photovoltaic manufacturing: Present status, future prospects, and research needs

    SciTech Connect

    Wolden, C.A.; Fthenakis, V.; Kurtin, J.; Baxter, J.; Repins, I.; Shasheen, S.; Torvik, J.; Rocket, A.; Aydil, E.

    2011-03-29

    In May 2010 the United States National Science Foundation sponsored a two-day workshop to review the state-of-the-art and research challenges in photovoltaic (PV) manufacturing. This article summarizes the major conclusions and outcomes from this workshop, which was focused on identifying the science that needs to be done to help accelerate PV manufacturing. A significant portion of the article focuses on assessing the current status of and future opportunities in the major PV manufacturing technologies. These are solar cells based on crystalline silicon (c-Si), thin films of cadmium telluride (CdTe), thin films of copper indium gallium diselenide, and thin films of hydrogenated amorphous and nanocrystalline silicon. Current trends indicate that the cost per watt of c-Si and CdTe solar cells are being reduced to levels beyond the constraints commonly associated with these technologies. With a focus on TW/yr production capacity, the issue of material availability is discussed along with the emerging technologies of dye-sensitized solar cells and organic photovoltaics that are potentially less constrained by elemental abundance. Lastly, recommendations are made for research investment, with an emphasis on those areas that are expected to have cross-cutting impact.

  1. CdTe Photovoltaics for Sustainable Electricity Generation

    NASA Astrophysics Data System (ADS)

    Munshi, Amit; Sampath, Walajabad

    2016-09-01

    Thin film CdTe (cadmium telluride) is an important technology in the development of sustainable and affordable electricity generation. More than 10 GW of installations have been carried out using this technology around the globe. It has been demonstrated as a sustainable, green, renewable, affordable and abundant source of electricity. An advanced sublimation tool has been developed that allows highly controlled deposition of CdTe films onto commercial soda lime glass substrates. All deposition and treatment steps can be performed without breaking the vacuum within a single chamber in an inline process that can be conveniently scaled to a commercial process. In addition, an advanced cosublimation source has been developed to allow the deposition of ternary alloys such as Cd x Mg1- x Te to form an electron reflector layer which is expected to address the voltage deficits in current CdTe devices and to achieve very high efficiency. Extensive materials characterization, including but not limited to scanning electron microscopy, transmission electron microscopy, energy dispersive x-ray spectroscopy, high resolution transmission electron microscopy and electron back-scatter diffraction, has been performed to get a better understanding of the effects of processing conditions on CdTe thin film photovoltaics. This combined with computer modeling such as density function theory modeling gives a new insight into the mechanism of CdTe photovoltaic function. With all these efforts, CdTe photovoltaics has seen great progress in the last few years. Currently, it has been recorded as the cheapest source of electricity in the USA on a commercial scale, and further improvements are predicted to further reduce the cost while increasing its utilization. Here, we give an overview of the advantages of thin film CdTe photovoltaics as well as a brief review of the challenges that need to be addressed. Some fundamental studies of processing conditions for thin film CdTe are also presented

  2. Study of semiconductor candidates for terrestrial thin-film photovoltaic solar energy conversion

    SciTech Connect

    Casey, M.S.

    1986-01-01

    In the first part, cadmium sulfide/indium phosphide heterostructures were fabricated by evaporating n-type cadmium sulfide onto p-type indium phosphide films grown at the Electronics Research Center of Rockwell International by metalorganic chemical vapor deposition (MOCVD) either on single crystal lnP, or on zinc-doped gallium arsenide films deposited by MOCVD on molybdenum and glass. The best efficiencies obtained were 4.6% for the epitaxial films, and 1.4% for the polycrystalline films (compared with 7.5% for a junction formed on single crystal lnP). In the second part, p-type cadmium telluride films deposited on glass by Menezes at the University of Mexico by hot-wall flash evaporation were studied. Typical films were highly resistive; attempts to lower the resistivity led to nonstoichiometric films. Observed electrical characteristics could be explained in terms of conductive tellurium pathways in a resistive CdTe matrix. In the third and major part, the phenomena occurring at the surface of bulk polycrystalline zinc phosphide and at interfaces of zinc phosphide based devices were investigated so that photovoltaic performance could be improved.

  3. Progress in photovoltaic module calibration: results of a worldwide intercomparison between four reference laboratories

    NASA Astrophysics Data System (ADS)

    Dirnberger, D.; Kräling, U.; Müllejans, H.; Salis, E.; Emery, K.; Hishikawa, Y.; Kiefer, K.

    2014-10-01

    Measurement results from a worldwide intercomparison of photovoltaic module calibrations are presented. Four photovoltaic reference laboratories in the USA, Japan and Europe with different traceability chains, measurement equipment and procedures, and uncertainty estimation concepts, participated. Seven photovoltaic modules of different technologies were measured (standard and high-efficiency crystalline silicon, cadmium telluride, single and double-junction amorphous and micromorph silicon). The measurement results from all laboratories and for all devices agreed well. Maximum power for the crystalline silicon samples was within ±1.3% for all thin-film modules roughly within ±3%, which is an improvement compared to past intercomparisons. The agreement between the results was evaluated using a weighted mean as a reference value, which considers results-specific uncertainty, instead of the widely used unweighted arithmetic mean. A further statistical analysis of all deviations between results and the corresponding reference mean showed that the uncertainties estimated by the participating laboratories were realistic, with a slight tendency towards being too conservative. The observed deviations of results from the reference mean concerned mainly short-circuit current and fill factor. Module stability was monitored through repeated measurements at Fraunhofer ISE before and after measurements at each of the other participating laboratories. Based on these re-measurements, stability problems that occurred for some thin-film modules and influenced the results were analyzed and explained in detail.

  4. Oxidation of polycrystalline materials based on zinc and cadmium chalcogenides

    SciTech Connect

    Gunchenko, N.N.; Dronova, G.N.; Maksimova, I.A.; Mironov, I.A.; Pavlova, V.N.; Pevtsova, N.I.

    1988-06-01

    The resistance of polycrystalline zinc sulfide and selenide and cadmium telluride to atmospheric exposure in heating to 300-700/degrees/C was investigated. Polycrystalline zinc sulfide (KO-2 optical ceramic) was prepared by hot powder molding and zinc selenide and cadmium telluride were prepared by evaporation with filtrations of vapors through porous materials and subsequent condensation on a heated support. Zinc sulfide was most sensitive to oxidation. The rate of oxidation of polycrystals was slightly higher than for single crystals. The possibility of using oxidation for creating protective and antireflective coatings on zinc sulfide and selenide should be noted.

  5. Syntheses, crystal and electronic structures of three new potassium cadmium(II)/zinc(II) tellurides: K{sub 2}Cd{sub 2}Te{sub 3}, K{sub 6}CdTe{sub 4} and K{sub 2}ZnTe{sub 2}

    SciTech Connect

    Li Minjie; Hu Chunli; Lei Xiaowu; Zhou Yong; Mao Jianggao

    2009-05-15

    Three new ternary potassium(I) zinc(II) or cadmium(II) tellurides, namely, K{sub 2}Cd{sub 2}Te{sub 3}, K{sub 6}CdTe{sub 4} and K{sub 2}ZnTe{sub 2}, were synthesized by solid-state reactions of the mixture of pure elements of K, Cd (or Zn) and Te in Nb tubes at high temperature. K{sub 2}Cd{sub 2}Te{sub 3} belongs to a new structure type and its structure contains a novel two-dimensional [Cd{sub 2}Te{sub 3}]{sup 2-} layers perpendicular to the b-axis. K(5) cation is located at the center of five member rings of the 2D [Cd{sub 2}Te{sub 3}]{sup 2-} layer, whereas other K{sup +} cations occupy the interlayer space. K{sub 6}CdTe{sub 4} with a K{sub 6}HgS{sub 4} type structure features a 'zero-dimensional' structure composed of isolated CdTe{sub 4} tetrahedra separated by the K{sup +} ions. K{sub 2}ZnTe{sub 2} in the K{sub 2}ZnO{sub 2} structural type displays 1D [ZnTe{sub 2}]{sup 2-} anionic chains of edge sharing [ZnTe{sub 4}] tetrahedra separated by the potassium(I) ions. K{sub 2}Cd{sub 2}Te{sub 3}, K{sub 6}CdTe{sub 4} and K{sub 2}ZnTe{sub 2} revealed a band gap of 1.93, 2.51 and 3.0 eV, respectively. - Graphical abstract: Three new semiconducting K-Zn(Cd)-Te phases were synthesized. They feature 2D, 1D or 0D anionic structure made of corner- and edge-sharing or isolated MTe{sub 4} tetrahedra.

  6. Radiation resistance of thin-film solar cells for space photovoltaic power

    NASA Technical Reports Server (NTRS)

    Woodyard, James R.; Landis, Geoffrey A.

    1991-01-01

    Copper indium diselenide, cadmium telluride, and amorphous silicon alloy solar cells have achieved noteworthy performance and are currently being studied for space power applications. Cadmium sulfide cells had been the subject of much effort but are no longer considered for space applications. A review is presented of what is known about the radiation degradation of thin film solar cells in space. Experimental cadmium telluride and amorphous silicon alloy cells are reviewed. Damage mechanisms and radiation induced defect generation and passivation in the amorphous silicon alloy cell are discussed in detail due to the greater amount of experimental data available.

  7. Cadmium sulphide solar cell

    SciTech Connect

    Bassett, P.J.; Verheijen, A.W.

    1984-07-31

    The invention relates to the manufacture of cadmium sulphide solar cells. A cell is formed of a glass substrate 10, a front contact 12 made, for example, of tin oxide, a cadmium sulphide layer 14 and a copper sulphide layer 16, the junction between the layers 14 and 16 is photovoltaic. In order to form a rear contact 18 on the copper sulphide layer, the invention proposes vapor depositing a mixed layer of copper and copper oxide onto the sulphide layer. The invention also describes a method of heat treatment following the formation of the rear contact in order to optimise the electrical performance of the cell.

  8. Phonon dynamics of americium telluride

    NASA Astrophysics Data System (ADS)

    Arya, B. S.; Aynyas, Mahendra; Ahirwar, Ashok K.; Sanyal, S. P.

    2013-06-01

    We report for the first time the complete phonon dispersion curves for Americium telluride (AmTe) using a breathing shell models (BSM) to establish their predominant ionic nature. The results obtained in the present study show the general features of the phonon spectrum. We could not compare our results with the experimental measurements as they are not available so far. We emphasize the need of neutron scattering measurements to compare our results. We also report, for the first time specific heat for this compound.

  9. Experience Scaling Up Manufacturing of Emerging Photovoltaic Technologies

    SciTech Connect

    Braun, G. W.; Skinner, D. E.

    2007-01-01

    This report examines two important generic photovoltaic technologies at particularly revealing stages of development, i.e., the stages between R&D and stable commercial production and profitable sales. Based on two historical cases, it attempts to shed light on the difference between: (1) costs and schedules validated by actual manufacturing and market experience, and (2) estimated costs and schedules that rely on technology forecasts and engineering estimates. The amorphous Silicon case also identifies some of the costs that are incurred in meeting specific market requirements, while the Cadmium Telluride case identifies many of the operational challenges involved in transferring R&D results to production. The transition between R&D and commercial success takes a great deal of time and money for emerging energy conversion technologies in general. The experience reported here can be instructive to those managing comparable efforts, and to their investors. It can also be instructive to R&D managers responsible for positioning such new technologies for commercial success.

  10. Process for making photovoltaic devices and resultant product

    DOEpatents

    Foote, James B.; Kaake, Steven A. F.; Meyers, Peter V.; Nolan, James F.

    1993-09-28

    A process and apparatus (70) for making a large area photovoltaic device (22) that is capable of generating low cost electrical power. The apparatus (70) for performing the process includes an enclosure (126) providing a controlled environment in which an oven (156) is located. At least one and preferably a plurality of deposition stations (74,76,78) provide heated vapors of semiconductor material within the oven (156) for continuous elevated temperature deposition of semiconductor material on a sheet substrate (24) including a glass sheet (26) conveyed within the oven. The sheet substrate (24) is conveyed on a roller conveyor (184) within the oven (156) and the semiconductor material whose main layer (82) is cadmium telluride is deposited on an upwardly facing surface (28) of the substrate by each deposition station from a location within the oven above the roller conveyor. A cooling station (86) rapidly cools the substrate (24) after deposition of the semiconductor material thereon to strengthen the glass sheet of the substrate.

  11. Process for making photovoltaic devices and resultant product

    DOEpatents

    Foote, James B.; Kaake, Steven A. F.; Meyers, Peter V.; Nolan, James F.

    1996-07-16

    A process and apparatus (70) for making a large area photovoltaic device (22) that is capable of generating low cost electrical power. The apparatus (70) for performing the process includes an enclosure (126) providing a controlled environment in which an oven (156) is located. At least one and preferably a plurality of deposition stations (74,76,78) provide heated vapors of semiconductor material within the oven (156) for continuous elevated temperature deposition of semiconductor material on a sheet substrate (24) including a glass sheet (26) conveyed within the oven. The sheet substrate (24) is conveyed on a roller conveyor (184) within the oven (156) and the semiconductor material whose main layer (82) is cadmium telluride is deposited on an upwardly facing surface (28) of the substrate by each deposition station from a location within the oven above the roller conveyor. A cooling station (86) rapidly cools the substrate (24) after deposition of the semiconductor material thereon to strengthen the glass sheet of the substrate.

  12. Process for making photovoltaic devices and resultant product

    DOEpatents

    Foote, James B.; Kaake, Steven A. F.; Meyers, Peter V.; Nolan, James F.

    1995-11-28

    A process and apparatus (70) for making a large area photovoltaic device (22) that is capable of generating low cost electrical power. The apparatus (70) for performing the process includes an enclosure (126) providing a controlled environment in which an oven (156) is located. At least one and preferably a plurality of deposition stations (74,76,78) provide heated vapors of semiconductor material within the oven (156) for continuous elevated temperature deposition of semiconductor material on a sheet substrate (24) including a glass sheet (26) conveyed within the oven. The sheet substrate (24) is conveyed on a roller conveyor (184) within the oven (156) and the semiconductor material whose main layer (82) is cadmium telluride is deposited on an upwardly facing surface (28) of the substrate by each deposition station from a location within the oven above the roller conveyor. A cooling station (86) rapidly cools the substrate (24) after deposition of the semiconductor material thereon to strengthen the glass sheet of the substrate.

  13. Intertemporal cumulative radiative forcing effects of photovoltaic deployments.

    PubMed

    Ravikumar, Dwarakanath; Seager, Thomas P; Chester, Mikhail V; Fraser, Matthew P

    2014-09-02

    Current policies accelerating photovoltaics (PV) deployments are motivated by environmental goals, including reducing greenhouse gas (GHG) emissions by displacing electricity generated from fossil-fuels. Existing practice assesses environmental benefits on a net life-cycle basis, where displaced GHG emissions offset those generated during PV production. However, this approach does not consider that the environmental costs of GHG release during production are incurred early, while environmental benefits accrue later. Thus, where policy targets suggest meeting GHG reduction goals established by a certain date, rapid PV deployment may have counterintuitive, albeit temporary, undesired consequences. On a cumulative radiative forcing (CRF) basis, the environmental improvements attributable to PV might be realized much later than is currently understood, particularly when PV manufacturing utilizes GHG-intensive energy sources (e.g., coal), but deployment occurs in areas with less GHG-intensive electricity sources (e.g., hydroelectric). This paper details a dynamic CRF model to examine the intertemporal warming impacts of PV deployments in California and Wyoming. CRF payback times are longer than GHG payback times by 6-12 years in California and 6-11 years in Wyoming depending on the PV technology mix and deployment strategy. For the same PV capacity being deployed, early installations yield greater CRF benefits (calculated over 10 and 25 years) than installations occurring later in time. Further, CRF benefits are maximized when PV technologies with the lowest manufacturing GHG footprint (cadmium telluride) are deployed in locations with the most GHG-intensive grids (i.e., Wyoming).

  14. Near-field transport imaging applied to photovoltaic materials

    DOE PAGES

    Xiao, Chuanxiao; Jiang, Chun -Sheng; Moseley, John; ...

    2017-05-26

    We developed and applied a new analytical technique - near-field transport imaging (NF-TI or simply TI) - to photovoltaic materials. Charge-carrier transport is an important factor in solar cell performance, and TI is an innovative approach that integrates a scanning electron microscope with a near-field scanning optical microscope, providing the possibility to study luminescence associated with recombination and transport with high spatial resolution. In this paper, we describe in detail the technical barriers we had to overcome to develop the technique for routine application and the data-fitting procedure used to calculate minority-carrier diffusion length values. The diffusion length measured bymore » TI agrees well with the results calculated by time-resolved photoluminescence on well-controlled gallium arsenide (GaAs) thin-film samples. We report for the first time on measurements on thin-film cadmium telluride using this technique, including the determination of effective carrier diffusion length, as well as the first near-field imaging of the effect of a single localized defect on carrier transport and recombination in a GaAs heterostructure. Furthermore, by changing the scanning setup, we were able to demonstrate near-field cathodoluminescence (CL), and correlated the results with standard CL measurements. In conclusion, the TI technique shows great potential for mapping transport properties in solar cell materials with high spatial resolution.« less

  15. Progress in Understanding Degradation Mechanisms and Improving Stability in Organic Photovoltaics.

    PubMed

    Mateker, William R; McGehee, Michael D

    2017-03-01

    Understanding the degradation mechanisms of organic photovoltaics is particularly important, as they tend to degrade faster than their inorganic counterparts, such as silicon and cadmium telluride. An overview is provided here of the main degradation mechanisms that researchers have identified so far that cause extrinsic degradation from oxygen and water, intrinsic degradation in the dark, and photo-induced burn-in. In addition, it provides methods for researchers to identify these mechanisms in new materials and device structures to screen them more quickly for promising long-term performance. These general strategies will likely be helpful in other photovoltaic technologies that suffer from insufficient stability, such as perovskite solar cells. Finally, the most promising lifetime results are highlighted and recommendations to improve long-term performance are made. To prevent degradation from oxygen and water for sufficiently long time periods, OPVs will likely need to be encapsulated by barrier materials with lower permeation rates of oxygen and water than typical flexible substrate materials. To improve stability at operating temperatures, materials will likely require glass transition temperatures above 100 °C. Methods to prevent photo-induced burn-in are least understood, but recent research indicates that using pure materials with dense and ordered film morphologies can reduce the burn-in effect.

  16. Atomic-layer deposition of cadmium chalcogenides on silicon

    NASA Astrophysics Data System (ADS)

    Ezhovskii, Yu. K.

    2014-09-01

    The results of studies of the synthesis of ultrafine layers of cadmium selenide and telluride by atomic-layer deposition on the silicon surface of different orientations were summarized. The main tendencies of the chemisorption of the components and conditions of layer growth during the formation of nanostructures of these compounds were determined.

  17. Method and making group IIB metal - telluride films and solar cells

    DOEpatents

    Basol, Bulent M.; Kapur, Vijay K.

    1990-08-21

    A technique is disclosed forming thin films (13) of group IIB metal-telluride, such as Cd.sub.x Zn.sub.1-x Te (0.ltoreq.x.ltoreq.1), on a substrate (10) which comprises depositing Te (18) and at least one of the elements (19) of Cd, Zn, and Hg onto a substrate and then heating the elements to form the telluride. A technique is also provided for doping this material by chemically forming a thin layer of a dopant on the surface of the unreacted elements and then heating the elements along with the layer of dopant. A method is disclosed of fabricating a thin film photovoltaic cell which comprises depositing Te and at least one of the elements of Cd, Zn, and Hg onto a substrate which contains on its surface a semiconductor film (12) and then heating the elements in the presence of a halide of the Group IIB metals, causing the formation of solar cell grade Group IIB metal-telluride film and also causing the formation of a rectifying junction, in situ, between the semiconductor film on the substrate and the Group IIB metal-telluride layer which has been formed.

  18. Module process optimization and device efficiency improvement for stable, low-cost, large-area, cadmium telluride-based photovoltaic module production. Annual subcontract report, 1 July 1990--31 December 1991

    SciTech Connect

    Albright, S.P.; Ackerman, B.; Chamberlin, R.R.; Jordan, J.F.

    1992-04-01

    This report describes work under a three-year phased subcontract to develop CdS/CdTe devices and modules and to further improve the technology base at Photon Energy, Inc. (PEI) to better address the commercialization issues and objectives of the PEI and the US Department of Energy. During this reporting period we (1) achieved efficiencies of 12.7% on small area devices, (2) achieved 1-ft{sup 2} modules with over 8% aperture-area efficiency (and active area efficiencies up to {approximately}10%), (3) tested 4-ft{sup 2} modules at NREL at 23.1 (21.3) watts, normalized (6.3% efficiency), and (4) found no inherent stability problems with CdTe technology during life testing, at both NREL and PEI. 7 refs.

  19. Compendium of photovoltaic degradation rates: Photovoltaic degradation rates

    SciTech Connect

    Jordan, Dirk C.; Kurtz, Sarah R.; VanSant, Kaitlyn; Newmiller, Jeff

    2016-02-07

    Published data on photovoltaic (PV) degradation measurements were aggregated and re-examined. The subject has seen an increased interest in recent years resulting in more than 11 000 degradation rates in almost 200 studies from 40 different countries. As studies have grown in number and size, we found an impact from sampling bias attributable to size and accuracy. Because of the correlational nature of this study we examined the data in several ways to minimize this bias. We found median degradation for x-Si technologies in the 0.5-0.6%/year range with the mean in the 0.8-0.9%/year range. Hetero-interface technology (HIT) and microcrystalline silicon (..mu..c-Si) technologies, although not as plentiful, exhibit degradation around 1%/year and resemble thin-film products more closely than x-Si. Several studies showing low degradation for copper indium gallium selenide (CIGS) have emerged. Higher degradation for cadmium telluride (CdTe) has been reported, but these findings could reflect a convolution of less accurate studies and longer stabilization periods for some products. Significant deviations for beginning-of-life measurements with respect to nameplate rating have been documented over the last 35 years. Therefore, degradation rates that use nameplate rating as reference may be significantly impacted. Studies that used nameplate rating as reference but used solar simulators showed less variation than similar studies using outdoor measurements, even when accounting for different climates. This could be associated with confounding effects of measurement uncertainty and soiling that take place outdoors. Hotter climates and mounting configurations that lead to sustained higher temperatures may lead to higher degradation in some, but not all, products. Wear-out non-linearities for the worst performing modules have been documented in a few select studies that took multiple measurements of an ensemble of modules during the lifetime of the system. However, the majority

  20. Polycrystalline thin-film technology: Recent progress in photovoltaics

    NASA Astrophysics Data System (ADS)

    Mitchell, R. L.; Zweibel, K.; Ullal, H. S.

    1991-12-01

    Polycrystalline thin films have made significant technical progress in the past year. Three of these materials that have been studied extensively for photovoltaic (PV) power applications are copper indium diselenide (CuInSe2), cadmium telluride (CdTe), and thin film polycrystalline silicon (x-Si) deposited on ceramic substrates. The first of these materials, polycrystalline thin film CuInSe2, has made some rapid advances in terms of high efficiency and long term reliability. For CuInSe2 power modules, a world record has been reported on a 0.4 sq m module with an aperture-area efficiency of 10.4 pct. and a power output of 40.4 W. Additionally, outdoor reliability testing of CuInSe2 modules, under both loaded and open-circuit conditions, has resulted in only minor changes in module performance after more than 1000 days of continuous exposure to natural sunlight. CdTe module research has also resulted in several recent improvements. Module performance has been increased with device areas reaching nearly 900 sq cm. Deposition has been demonstrated by several different techniques, including electrodeposition, spraying, and screen printing. Outdoor reliability testing of CdTe modules was also carried out under both loaded and open-circuit conditions, with more than 600 days of continuous exposure to natural sunlight. These tests were also encouraging and indicated that the modules were stable within measurement error. The highest reported aperture-area module efficiency for CdTe modules is 10 pct.; the semiconductor material was deposited by electrodeposition. A thin-film CdTe photovoltaic system with a power output of 54 W has been deployed in Saudi Arabia for water pumping. The Module Development Initiative has made significant progress in support of the Polycrystalline Thin-Film Program in the past year, and results are presented in this paper.

  1. High efficiency cadmium telluride and zinc telluride based thin-film solar cells

    SciTech Connect

    Rohatgi, A.; Sudharsanan, R.; Ringel, S.A.; Chou, H.C. )

    1992-10-01

    This report describes work to improve the basic understanding of CdTe and ZnTe alloys by growing and characterizing these films along with cell fabrication. The major objective was to develop wide-band-gap (1.6--1.8 eV) material for the top cell, along with compatible window material and transparent ohmic contacts, so that a cascade cell design can be optimized. Front-wall solar cells were fabricated with a glass/SnO{sub 2}/CdS window, where the CdS film is thin to maximize transmission and current. Wide-band-gap absorber films (E{sub g} = 1.75 eV) were grown by molecular beam epitaxy (MBE) and metal-organic chemical vapor deposition (MOCVD) techniques, which provided excellent control for tailoring the film composition and properties. CdZnTe films were grown by both MBE and MOCVD. All the as-grown films were characterized by several techniques (surface photovoltage spectroscopy, Auger electron spectroscopy (AES), and x-ray photoelectron spectroscopy (XPS)) for composition, bulk uniformity, thickness, and film and interface quality. Front-wall-type solar cells were fabricated in collaboration with Ametek Materials Research Laboratory using CdTe and CdZnTe polycrystalline absorber films. The effects of processing on ternary film were studied by AES and XPS coupled with capacitance voltage and current voltage measurements as a function of temperature. Bias-dependent spectral response and electrical measurements were used to test some models in order to identify and quantify dominant loss mechanisms.

  2. Electrodeposition and characterization of cadmium telluride and lead telluride thin films

    NASA Astrophysics Data System (ADS)

    Nicic, Igor

    In chapter 2 we report the growth of CdTe/PbTe superlattice on polycrystalline gold and indium tin oxide (ITO). These systems have been characterized by cyclic voltammetry, Auger electron spectroscopy, X-ray photoelectron spectroscopy, X-ray diffraction, UV-vis-NIR absorption spectroscopy and time-resolved transient absorption spectroscopy. Our data, the steady state optical spectra in particular, demonstrate unambiguously the formation of a stable CdTe/PbTe quantum well under these conditions. Preliminary femtosecond time-resolved measurements, in which the dynamics of the system appear to be dominated by carrier trapping dynamics, suggest that the quality of epitaxy is lower on ITO than on Au surfaces. Strategies for improving epitaxy are discussed. In chapter 3 we present a study of the underpotential deposition (UPD) of Te monolayers onto Au electrodes from perchloric acid solution using electrochemical quartz microgravimetry (EQCM) and chronocoulometry. We find that tellurium(IV) oxide (as either TeO 2 or HTeO2+) is adsorbed on Au at potentials positive of the UPD region. EQCM experiments, in which an Au electrode poised at + 0.7 V vs. Ag/AgCl in 0.1 M HClO4 electrolyte was monitored as function time before and after the addition of TeO2, showed a slow adsorption of a submonolayer of TeO2. Energy dispersive X-ray (EDX) measurements confirm the presence of a Te-containing species on the surface. Two distinct reductive UPD features at approximately +0.400 V and -0.100 V vs. AgjAgCl, respectively, were observed by cyclic voltammetry. EQCM measurements indicate that there is a small, reproducible mass decrease accompanying the first UPD wave, consistent with the loss of H2O from the surface as an adsorbed layer of HTeO2+ is reduced to a submonolayer of Te atoms. Chronocoulometry indicates a charge density of 160 muC/cm2 for the first UPD wave, which, when taken together with the mass change data, is consistent with the 4-electron reduction of adsorbed HTeO2+ to Te. In addition, analysis of the current-time data indicates that this process occurs by a two-dimensional instantaneous nucleation and growth mechanism resulting in an ordered overlayer with a fractional coverage of ca. 0.41. The second UPD peak results in the formation of a dense monolayer by deposition of HTeO2+ from solution. This process also appears to occur by a direct 4-electron reduction and exhibits simple Langmuir adsorption behavior as evidenced by exponentially decaying current-time transients. The saturation coverage is approximately 0.9 in comparison to the number of gold atoms on the surface. Growth of CdTe and PbTe thin films is reported in chapter four. CdTe and PbTe have a wide range of applications including thermoelectric generators, solar cells and infra-red detectors. In this chapter we present optimized conditions for electrocodeposition of thin films of CdTe and PbTe. A study by EDX and XPS helped in determining concentrations needed for stoichiometric growth of CdTe and PbTe thin films. EQCM gave insights into the deposition mechanism and preliminary XRD data showed that both CdTe and PbTe have preferential orientation growth. Conditions for optimal film growth are described. Film formation was studied by EQCM and electrochemistry and XRD.

  3. Radio-frequency magnetron triode sputtering of cadmium telluride and zinc telluride films and solar cells

    NASA Astrophysics Data System (ADS)

    Sanford, Adam Lee

    The n-CdS/p-CdTe solar cell has been researched for many years now. Research groups use a variety of processes to fabricate thin-film CdS/CdTe cells, including physical vapor deposition, chemical vapor deposition, and RF diode sputtering. One of the central areas of investigation concerning CdS/CdTe cells is the problem of a Schottky barrier at the back contact. Even cells fabricated with ohmic back contacts degrade into Schottky barriers as the devices are used. This severely degrades power generation. One possible solution is to use p+-ZnTe as an interlayer between CdTe and the back contact. ZnTe is easily doped with Cu to be p-type. However, even contacts with this ZnTe interlayer degrade over time, because Cu is highly mobile and diffuses away from the contact towards the CdS/CdTe junction. Another possibility is to dope ZnTe with N. It has been demonstrated using molecular beam epitaxy and RF diode sputtering. In this study, CdTe films are fabricated using a variation of RF diode sputtering called triode sputtering. This technique allows for control of ion bombardment to the substrate during deposition. Also, a higher plasma density near the target is achieved allowing depositions at lower pressures. These films are characterized structurally to show the effects of the various deposition parameters. N-doped ZnTe films are also fabricated using this technique. These films are characterized electrically to show the effects of the various deposition parameters. Also, the effects of post-deposition annealing are observed. It is found that annealing at the right temperature can increase the conductivity of the films by a factor of 3 or more. However, annealing at higher temperatures decreases the conductivity to as low as 12% of the initial conductivity. Finally, RF triode sputtered N-doped ZnTe films are used as an interlayer at the back contact of a CdS/CdTe solar cell. The effects of annealing the device before and after contact deposition are observed. Annealing before depositing contacts results in an increase in Voc of 20mV. Annealing after contact deposition results in a degradation of fill factor over time.

  4. Surface treatment and protection method for cadmium zinc telluride crystals

    DOEpatents

    Wright, Gomez W.; James, Ralph B.; Burger, Arnold; Chinn, Douglas A.

    2003-01-01

    A method for treatment of the surface of a CdZnTe (CZT) crystal that provides a native dielectric coating to reduce surface leakage currents and thereby, improve the resolution of instruments incorporating detectors using CZT crystals. A two step process is disclosed, etching the surface of a CZT crystal with a solution of the conventional bromine/methanol etch treatment, and after attachment of electrical contacts, passivating the CZT crystal surface with a solution of 10 w/o NH.sub.4 F and 10 w/o H.sub.2 O.sub.2 in water.

  5. A portable cadmium telluride multidetector probe for cardiac function monitoring

    NASA Astrophysics Data System (ADS)

    Arntz, Y.; Chambron, J.; Dumitresco, B.; Eclancher, B.; Prat, V.

    1999-06-01

    A new nuclear stethoscope based on a matrix of small CdTe semiconductor detectors has been developed for studying the cardiac performance by gamma ventriculography at the equilibrium, in rest and stress conditions, in the early and recovery phases of the coronary disease and to follow the long-term therapy. The light-weight probe consists of an array of 64 detectors 5×5×2 mm grouped in 16 independent units in a lead shielded aluminum box including 16 preamplifiers. The probe is connected to an electronic box containing DC power supply, 16 channel amplifiers, discriminators and counters, two analog-triggering ECG channels, and interface to a PC. The left ventricle activity is, preferentially, detected by using a low-resolution matching convergent collimator. A physical evaluation of the probe has been performed, both with static tests and dynamically with a hydraulic home-built model of beating heart ventricle paced by a rhythm simulator. The sum of the 16 detectors activity provided a radiocardiogram (RCG) which well depicted the filling and ejection of the cardiac beats, allowing to compare the clinically relevant parameters of the cardiac performance, proportional variables of the stroke volume (SV), ejection fraction (EF) and ventricular flow-rate with the known absolute values programmed on the model. The portable system is now in operation for clinical assessment of cardiac patients.

  6. A surface study of mercury-cadmium-telluride

    NASA Astrophysics Data System (ADS)

    Lopes, V. C.

    1985-12-01

    Single crystals of Hg (sub 1-x) Cd (sub x) Te were studied to determine how changes in the surface conditions affected electrical properties, infrared detector grade material was used to examine the effects of changes in the surface charge density on electrical l/f noise. The surface charge density which was controlled by the pH of the aqueous solution was measured in a zeta meter which operated much like a Millikan oil drop experiment. The electrophoresis zeta potential measurements on (HgCd)Te have identified the active surface oxide as TeO2 and has also revealed information on the surface chemistry. Electrical l/f noise in-(HgCd)Te was found to be dominated by bulk and not surface effects at room temperature. Laser Raman and Auger spectroscopy were used to assess mechanical surface damage and anodic oxide composition.

  7. a Surface Study of Mercury-Cadmium Telluride.

    NASA Astrophysics Data System (ADS)

    Lopes, Vincent C.

    Single crystals of Hg(,1-x)Cd(,x)Te were studied to determine how changes in the surface conditions affected electrical properties. Infrared detector grade material from Honeywell Radiation Center (x = 0.2, bandgap near 10(mu)m) was used to examine the effects of changes in the surface charge density on electrical l/f noise. The surface charge density which was controlled by the pH of the aqueous solution was measured in a zeta meter which operated much like a Millikan oil drop experiment. The electrophoresis zeta potential measurements on (HgCd)Te have identified the active surface oxide as TeO(,2) and has also revealed information on the surface chemistry. An experimental fit yielded the dissociation constant of tellurous acid which was the result of TeO(,2) combining with H(,2)O. The dissociation of tellurous acid was responsible for the measured surface charge densities and the surface chemistry from pH = 1 to pH = 8. At pH = 1, the surface was H(,3)TeO(,3)('+). At pH = 1.5, the surface was H(,2)TeO(,3) which gave the neutral point, PZZP (Point of Zero Zeta Potential). With the pH between 2 and 6, the surface was HTeO(,3)('-). As the pH was changed to 7 and greater, the surface was TeO(,3)-. Electrical l/f noise in (HgCd)Te was found to be dominated by bulk and not surface effects at room temperature. l/f noise measure- ments were made in an air ambient and in various electrolytic solu- tions which produced different surface charge conditions. The l/f noise voltage did not change within experimental error as the surface charge density was changed (due to major changes in the surface chemistry) by pH; at pH = 7, ((sigma)(,s) = -3 x 10('12) e/cm('2) due to TeO(,3)-), with the pH between 2 and 6 (-1 x 10('12) e/cm('2) < (sigma)(,s) < -2 x 10('12) e/cm('2) due to HTeO(,3)('-)), and to pH = 1.5 ((sigma)(,s) = 0 due to H(,2)TeO(,3)). Laser Raman and Auger spectroscopy were used to assess mechanical surface damage and anodic oxide composition. Surface damage on (HgCd)Te produced dramatic changes in the Raman spectrum which was restored to its pre-damaged state by use of the bromine-methanol etch. Auger spectroscopy of anodically oxidized (HgCd)Te further confirmed that the tellurium surface oxide was TeO(,2). The ratio of the atomic concentrations of Te to O in the oxide was found to be approximately 1 to 2.

  8. Far Infrared Mercury-Cadmium-Telluride Photoconductive Detectors.

    DTIC Science & Technology

    1980-09-01

    mobl come, v~r, donipŕ Sh totmid c clmtui Mistime Imduileg Uhwtksj-bmd ,wmblund.. and imeelty 5 value of 0.4 us. Below 30 K the lifetime increases...Laboratories), 2) D. L. Smith (California Institute of Technology ), 3) P. M. Raccah (University of Illinois at Chicago Circle), 4) R. E. Longshore (Night

  9. Cadmium Telluride Detectors for Gamma Dose-Rate Meters,

    DTIC Science & Technology

    1982-03-01

    comptes/ (mm2 gray); ceci correspond ä la reponse obtenue avec un detecteur au silicium d’une epaisseur equivalente. Les mesures avec un detecteur CdTe...CYLTRAN COMPUTER PROGRAM INSTRUCTIONS ORIGINATING ACTIVIT> Eniei organization issuing the doi ument name dim address ot ihe 2A

  10. Method of preparing radially homogeneous mercury cadmium telluride crystals

    NASA Technical Reports Server (NTRS)

    Lehoczky, Sandor L. (Inventor); Szofran, Frank R. (Inventor)

    1989-01-01

    Hg(1-x)Cd(x)Te is prepared in an improved directional solidification method in which a precast alloy sample containing predetermined amounts of Hg, Cd, and Te is disposed in a sealed ampule and a furnace providing two controlled temperature zones is translated upward past the ampule to provide melting and resolidification. The present improvement is directed to maintaining the zones at temperatures determined in accordance with a prescribed formula providing a thermal barrier between the zones with a maximum thickness and translating the furnace past the zones at a rate less the 0.31 micron/sec.

  11. Photoluminescence Excitation Spectroscopy Characterization of Cadmium Telluride Solar Cells

    SciTech Connect

    Moore, James E.; Wang, Xufeng; Grubbs, Elizabeth K.; Drayton, Jennifer; Johnston, Steve; Levi, Dean; Lundstrom, Mark S.; Bermel, Peter

    2016-11-21

    The use of steady-state photoluminescence spectroscopy as a contactless characterization tool, suitable for inline optical characterization, has been previously demonstrated for high efficiency solar cells such as GaAs. In this paper, we demonstrate the use of PLE characterization on a thin film CdS/CdTe np heterojunction solar cell, and compare the results to measured EQE and I-V data. In contrast to previous work on high-quality GaAs, the PLE and EQE spectra do not match closely here. We still find, however, that reliable material parameters can be extracted from the PLE measurements. We also provide a physical explanation of the limits defining the cases when the PLE and EQE spectra may be expected to match.

  12. Magnetoresistance in p-type cadmium telluride doped with sodium

    NASA Astrophysics Data System (ADS)

    Ahmad, Faisal R.

    2015-01-01

    This paper gives an account of the observations that were made during experiments in which temperature dependent van der Pauw (vdP) measurements were conducted on sodium doped single crystalline CdTe. With the aid of the vdP technique, the resistivity of the sample was measured in the presence of an external transverse magnetic field. The measurements were conducted at temperatures that ranged from 24 K all the way up to 300 K. The measurements indicated that at low temperatures, the resistivity of the sample increased significantly as the magnitude of the magnetic field perpendicular to the sample was raised from 0 T to 1.5 T. It was observed that the magnetoresistance (MR) decreased with increasing temperature. At 24 K, for an applied field of 1.5 T, the maximum MR was over 30%. Furthermore, it was also observed that the MR below 75 K exhibited a more or less linear dependence on the magnetic field. At higher temperatures, the MR as a function of the applied magnetic field exhibited a quadratic dependence. The results seem to indicate that the linear MR is most likely due to inhomogeneity in the semiconductor.

  13. Dynamics of Laser-Induced Phase Transitions in Cadmium Telluride

    SciTech Connect

    Kovalev, A.A.; Zhvavyi, S.P.; Zykov, G.L.

    2005-11-15

    A numerical simulation of the dynamics of phase transitions induced by nanosecond pulsed radiation from a ruby laser in CdTe has been carried out. It is shown that evaporation of Cd atoms results in cooling of the surface; consequently, a nonmonotonic profile of the temperature field is formed, with the maximum temperature being attained in the bulk of the semiconductor at a distance of about 10-30 nm from the surface. At radiation energy densities above the threshold, the molten state formed under the surface extends both to the surface and into the depth of the semiconductor. Crystallization also proceeds in two directions, namely, from the surface into the depth of the samples due to the growth of nucleation centers in the melt, which is highly depleted in Cd atoms under the conditions of intense heat removal, and from the substrate to the surface due to epitaxial growth.

  14. Magnetoresistance in p-type cadmium telluride doped with sodium

    SciTech Connect

    Ahmad, Faisal R.

    2015-01-05

    This paper gives an account of the observations that were made during experiments in which temperature dependent van der Pauw (vdP) measurements were conducted on sodium doped single crystalline CdTe. With the aid of the vdP technique, the resistivity of the sample was measured in the presence of an external transverse magnetic field. The measurements were conducted at temperatures that ranged from 24 K all the way up to 300 K. The measurements indicated that at low temperatures, the resistivity of the sample increased significantly as the magnitude of the magnetic field perpendicular to the sample was raised from 0 T to 1.5 T. It was observed that the magnetoresistance (MR) decreased with increasing temperature. At 24 K, for an applied field of 1.5 T, the maximum MR was over 30%. Furthermore, it was also observed that the MR below 75 K exhibited a more or less linear dependence on the magnetic field. At higher temperatures, the MR as a function of the applied magnetic field exhibited a quadratic dependence. The results seem to indicate that the linear MR is most likely due to inhomogeneity in the semiconductor.

  15. Improved Growth Of Cadmium Telluride Crystals Fro m Vapors

    NASA Technical Reports Server (NTRS)

    Rosenberger, Franz; Banish, Michael; Duval, Walter M. B.

    1995-01-01

    Effusive ampoule physical vapor transport (EAPVT) improved technique for growing high-quality crystals from vapors. Apparatus includes infrared-reflective viewing port for optical in situ monitoring of structure of growing crystal, enabling efficient determination of optimal thermal and transport operating conditions. Used commercially for efficiently growing various semiconductor compounds in form of single crystals of high structural and compositional uniformity.

  16. Variations in {mu}{tau} measurements in cadmium zinc telluride

    SciTech Connect

    Jones, K. A.; Datta, A.; Lynn, K. G.; Franks, L. A.

    2010-06-15

    A number of commonly employed experimental methods used to determine the {mu}{tau} product in the semiconductor CdZnTe were investigated. The objective was to determine possible differences in results inherent in the techniques. A pixelated and two planar devices were studied using various distinct methods together with different excitation sources and amplifier shaping times. Variations in the results up to a factor of 5 were found. Variations due to shaping times, particle type, and energy were evident.

  17. Growth of Cadmium Telluride under Controlled Heat Transfer Conditions.

    DTIC Science & Technology

    1986-06-11

    34Grain boundaries in the sphalerite structure." J. Phys. Chem. Solids 25, 1385 (1964) 7. H. J. Queisser, "Properties of twin boundaries in silicon." J...coherent twin boundaries in copper." J. Appl. Phys. 22, 448 (1951) 3. R. L. Fullman, "Crystallography and interfacial free energy of noncoherent twin ...Khan, "The interfacial energy of coherent twin boundaries in copper." Phil. Mag. 6, 937 (1961) 6. R. E. Smallman, I. C. Dillamore and P. S. Dobson

  18. Theoretical Investigation of Point Defects of Mercury Cadmium Telluride.

    DTIC Science & Technology

    1985-11-01

    AUTHOR(.) S. CONTRACT ON GRANT NUMDER(e) Dr. Dee-Son Pan DMAG 29-81-K-0054 *S. PERFORMING ORGANIZATION NAME AND ADDRESS 10. PROGRAM ELEMENT, PROJECT...perturbation theory based on the virtual crystal approximation (VCA). It is known, especially for metal alloys, that for many alloy systems such a simple...or III-V compound, because the " introduced perturbation is weaker. We have carried out intensive calculation for the Hg vacancy and antisites based

  19. Characterization of MCT (Mercury Cadmium Telluride) by EER (Electrolyte Electroreflectance)

    DTIC Science & Technology

    1985-01-01

    properties of solids would contribute to the knowledge of their electronic structure....mechanical calculations of the electronic structure of the molecules. By the same token one concludes that a study and understanding of the optical

  20. Blocking contacts for N-type cadmium zinc telluride

    NASA Technical Reports Server (NTRS)

    Stahle, Carl M. (Inventor); Parker, Bradford H. (Inventor); Babu, Sachidananda R. (Inventor)

    2012-01-01

    A process for applying blocking contacts on an n-type CdZnTe specimen includes cleaning the CdZnTe specimen; etching the CdZnTe specimen; chemically surface treating the CdZnTe specimen; and depositing blocking metal on at least one of a cathode surface and an anode surface of the CdZnTe specimen.

  1. Metal Contacts to Cadmium Telluride (CdTe).

    DTIC Science & Technology

    1987-10-01

    WILLIAMS, I.M. DHARMADASA, M.H. PATTERSON’, C. MAANI** and N.M. FORSYTH Physics Deparment, University College, PO Box 78, Cardiff, UK Received 10 June 1985...North-Holland Physics Publishing Division) -43- 324 R. H. Williams et al. / Metal contacts to InP and CdTe considerations of local charge neutrality near...support. References Ill L.J. Brillson. Surface Sci. Rept. 2 (1982) 123. 121 R.H. Williams. Proc. 17th Intern. Conf. on the Physics of Semiconductors

  2. Method for surface treatment of a cadmium zinc telluride crystal

    DOEpatents

    James, R.; Burger, A.; Chen, K.T.; Chang, H.

    1999-08-03

    A method for treatment of the surface of a CdZnTe (CZT) crystal is disclosed that reduces surface roughness (increases surface planarity) and provides an oxide coating to reduce surface leakage currents and thereby, improve resolution. A two step process is disclosed, etching the surface of a CZT crystal with a solution of lactic acid and bromine in ethylene glycol, following the conventional bromine/methanol etch treatment, and after attachment of electrical contacts, oxidizing the CZT crystal surface. 3 figs.

  3. Method for surface treatment of a cadmium zinc telluride crystal

    DOEpatents

    James, Ralph; Burger, Arnold; Chen, Kuo-Tong; Chang, Henry

    1999-01-01

    A method for treatment of the surface of a CdZnTe (CZT) crystal that reduces surface roughness (increases surface planarity) and provides an oxide coating to reduce surface leakage currents and thereby, improve resolution. A two step process is disclosed, etching the surface of a CZT crystal with a solution of lactic acid and bromine in ethylene glycol, following the conventional bromine/methanol etch treatment, and after attachment of electrical contacts, oxidizing the CZT crystal surface.

  4. Growth of cadmium telluride by pulling under liquid encapsulation

    NASA Astrophysics Data System (ADS)

    Witt, A. F.

    1983-12-01

    This research effort was aimed at re-examining the potential of the LEC technique for growth of CdTe. The study was conducted in two ADL systems, type MP and MP-II, suitable for growth at pressures up to 75 and 600 psi respectively. Investigations of the optical and thermal properties of B2O3 were carried out in a modified conventional low pressure puller. This study established the suitability of the LEC technique for growth of CdTe in single crystal form.

  5. Modeling Mercury Cadmium Telluride (HgCdTe) Photodiodes

    DTIC Science & Technology

    2009-11-01

    semiconductor in 1958. Today, HgCdTe is the most widely used infrared detector material. In this work, we present Silvaco simulations of HgCdTe...minority carrier lifetimes, Auger coefficients, etc. As such, this represents the most extensive calculation using Silvaco ATLAS for modeling HgCdTe...Photodetector Analysis 4 4. Silvaco Simulation Software—General Characteristics 4 5. Silvaco Simulations of HgCdTe Photodetectors 7 6. Future Work 8 7

  6. Metastable electrical characteristics of polycrystalline thin-film photovoltaic modules upon exposure and stabilization

    NASA Astrophysics Data System (ADS)

    Deline, Chris A.; del Cueto, Joseph A.; Albin, David S.; Rummel, Steve R.

    2011-09-01

    The significant features of a series of stabilization experiments conducted at the National Renewable Energy Laboratory (NREL) between May 2009 and the present are reported. These experiments evaluated a procedure to stabilize the measured performance of thin-film polycrystalline cadmium telluride (CdTe) and copper indium gallium diselenide (CIGS) thin-film photovoltaic (PV) modules. The current-voltage (I-V) characteristics of CdTe and CIGS thin-film PV devices and modules exhibit transitory changes in electrical performance after thermal exposure in the dark and/or bias and light exposures. We present the results of our case studies of module performance versus exposure: light-soaked at 65°C exposed in the dark under forward bias at 65°C and, finally, longer-term outdoor exposure. We find that stabilization can be achieved to varying degrees using either light-soaking or dark bias methods and that the existing IEC 61646 light-soaking interval may be appropriate for CdTe and CIGS modules with one caveat: it is likely that at least three exposure intervals are required for stabilization.

  7. NREL photovoltaic subcontract reports: Abstracts and document control information, 1 August 1992--31 July 1993

    SciTech Connect

    Not Available

    1993-09-01

    This report contains document control information and abstracts for the National Renewable Energy Laboratory (NREL) subcontracted photovoltaic (PV) program publications. It also lists source information on additional publications that describe US Department of Energy (DOE) PV research activities. It is not totally exhaustive, so it lists NREL contacts for requesting further information on the DOE and NREL PV programs. This report covers the period from August 1, 1992, through July 31, 1993. This report is published periodically, with the previous one covering the period from August 1, 1991, through July 31, 1992. The purpose of continuing this type of publication is to help keep people abreast of specific PV interests, while maintaining a balance on the costs to the PV program. The information in this report is organized under PV technology areas: Amorphous Silicon Research; Polycrystalline Thin Films (including copper indium diselenide, cadmium telluride, and thin-film silicon); Crystalline Materials and Advanced Concepts (including silicon, gallium arsenide, and other group III-V materials); PV Manufacturing Technology Development (which may include manufacturing information for various types of PV materials).

  8. Metastable Electrical Characteristics of Polycrystalline Thin-Film Photovoltaic Modules upon Exposure and Stabilization: Preprint

    SciTech Connect

    Deline, C. A.; del Cueto, J. A.; Albin, D. S.; Rummel, S. R.

    2011-09-01

    The significant features of a series of stabilization experiments conducted at the National Renewable Energy Laboratory (NREL) between May 2009 and the present are reported. These experiments evaluated a procedure to stabilize the measured performance of thin-film polycrystalline cadmium telluride (CdTe) and copper indium gallium diselenide (CIGS) thin-film photovoltaic (PV) modules. The current-voltage (I-V) characteristics of CdTe and CIGS thin-film PV devices and modules exhibit transitory changes in electrical performance after thermal exposure in the dark and/or bias and light exposures. We present the results of our case studies of module performance versus exposure: light-soaked at 65 degrees C; exposed in the dark under forward bias at 65 degrees C; and, finally, longer-term outdoor exposure. We find that stabilization can be achieved to varying degrees using either light-soaking or dark bias methods and that the existing IEC 61646 light-soaking interval may be appropriate for CdTe and CIGS modules with one caveat: it is likely that at least three exposure intervals are required for stabilization.

  9. Damage in Monolithic Thin-Film Photovoltaic Modules Due to Partial Shade

    SciTech Connect

    Silverman, Timothy J.; Mansfield, Lorelle; Repins, Ingrid; Kurtz, Sarah

    2016-09-01

    The typical configuration of monolithic thin-film photovoltaic modules makes it possible for partial shade to place one or more cells in such a module in reverse bias. Reverse bias operation leads to high voltage, current density, and power density conditions, which can act as driving forces for failure. We showed that a brief outdoor shadow event can cause a 7% permanent loss in power. We applied an indoor partial shade durability test that moves beyond the standard hot spot endurance test by using more realistic mask and bias conditions and by carefully quantifying the permanent change in performance due to the stress. With the addition of a pass criterion based on change in maximum power, this procedure will soon be proposed as a part of the module-type qualification test. All six commercial copper indium gallium diselenide and cadmium telluride modules we tested experienced permanent damage due to the indoor partial shade test, ranging from 4% to 14% loss in maximum power. We conclude by summarizing ways to mitigate partial shade stress at the cell, module, and system levels.

  10. Selective and low temperature transition metal intercalation in layered tellurides

    PubMed Central

    Yajima, Takeshi; Koshiko, Masaki; Zhang, Yaoqing; Oguchi, Tamio; Yu, Wen; Kato, Daichi; Kobayashi, Yoji; Orikasa, Yuki; Yamamoto, Takafumi; Uchimoto, Yoshiharu; Green, Mark A.; Kageyama, Hiroshi

    2016-01-01

    Layered materials embrace rich intercalation reactions to accommodate high concentrations of foreign species within their structures, and find many applications spanning from energy storage, ion exchange to secondary batteries. Light alkali metals are generally most easily intercalated due to their light mass, high charge/volume ratio and in many cases strong reducing properties. An evolving area of materials chemistry, however, is to capture metals selectively, which is of technological and environmental significance but rather unexplored. Here we show that the layered telluride T2PTe2 (T=Ti, Zr) displays exclusive insertion of transition metals (for example, Cd, Zn) as opposed to alkali cations, with tetrahedral coordination preference to tellurium. Interestingly, the intercalation reactions proceed in solid state and at surprisingly low temperatures (for example, 80 °C for cadmium in Ti2PTe2). The current method of controlling selectivity provides opportunities in the search for new materials for various applications that used to be possible only in a liquid. PMID:27966540

  11. Selective and low temperature transition metal intercalation in layered tellurides

    NASA Astrophysics Data System (ADS)

    Yajima, Takeshi; Koshiko, Masaki; Zhang, Yaoqing; Oguchi, Tamio; Yu, Wen; Kato, Daichi; Kobayashi, Yoji; Orikasa, Yuki; Yamamoto, Takafumi; Uchimoto, Yoshiharu; Green, Mark A.; Kageyama, Hiroshi

    2016-12-01

    Layered materials embrace rich intercalation reactions to accommodate high concentrations of foreign species within their structures, and find many applications spanning from energy storage, ion exchange to secondary batteries. Light alkali metals are generally most easily intercalated due to their light mass, high charge/volume ratio and in many cases strong reducing properties. An evolving area of materials chemistry, however, is to capture metals selectively, which is of technological and environmental significance but rather unexplored. Here we show that the layered telluride T2PTe2 (T=Ti, Zr) displays exclusive insertion of transition metals (for example, Cd, Zn) as opposed to alkali cations, with tetrahedral coordination preference to tellurium. Interestingly, the intercalation reactions proceed in solid state and at surprisingly low temperatures (for example, 80 °C for cadmium in Ti2PTe2). The current method of controlling selectivity provides opportunities in the search for new materials for various applications that used to be possible only in a liquid.

  12. The Status and Outlook for the Photovoltaics Industry

    NASA Astrophysics Data System (ADS)

    Carlson, David

    2006-03-01

    The first silicon solar cell was made at Bell Labs in 1954, and over the following decades, shipments of photovoltaic (PV) modules increased at a rate of about 18% annually. In the last several years, the annual growth rate has increased to ˜ 35% due largely to government-supported programs in Japan and Germany. Silicon technology has dominated the PV industry since its inception, and in 2005 about 65% of all solar cells were made from polycrystalline (or multicrystalline) silicon, 24% from monocrystalline silicon and ˜ 4% from ribbon silicon. While conversion efficiencies as high as 24.7% have been obtained in the laboratory for silicon solar cells, the best efficiencies for commercial PV modules are in the range of 17 18% (the efficiency limit for a silicon solar cell is ˜ 29%). A number of companies are commercializing solar cells based on other materials such as amorphous silicon, microcrystalline silicon, cadmium telluride, copper-indium-gallium-diselenide (CIGS), gallium arsenide (and related compounds) and dye- sensitized titanium oxide. Thin film CIGS solar cells have been fabricated with conversion efficiencies as high as 19.5% while efficiencies as high as 39% have been demonstrated for a GaInP/Ga(In)As/Ge triple-junction cell operating at a concentration of 236 suns. Thin film solar cells are being used in consumer products and in some building-integrated applications, while PV concentrator systems are being tested in grid-connected arrays located in high solar insolation areas. Nonetheless, crystalline silicon PV technology is likely to dominate the terrestrial market for at least the next decade with module efficiencies > 20% and module prices of < 1/Wp expected by 2020, which in turn should allow significant penetration of the utility grid market. However, crystalline silicon solar cells may be challenged in the next decade or two by new low-cost, high performance devices based on organic materials and nanotechnology.

  13. Recycling Of Cis Photovoltaic Waste

    DOEpatents

    Drinkard, Jr., William F.; Long, Mark O.; Goozner; Robert E.

    1998-07-14

    A method for extracting and reclaiming metals from scrap CIS photovoltaic cells and associated photovoltaic manufacturing waste by leaching the waste with dilute nitric acid, skimming any plastic material from the top of the leaching solution, separating glass substrate from the leachate, electrolyzing the leachate to plate a copper and selenium metal mixture onto a first cathode, replacing the cathode with a second cathode, re-electrolyzing the leachate to plate cadmium onto the second cathode, separating the copper from selenium, and evaporating the depleted leachate to yield a zinc and indium containing solid.

  14. Cadmium toxicity

    PubMed Central

    Wan, Lichuan; Zhang, Haiyan

    2012-01-01

    Cadmium is a well-known environmental pollutant with distinctly toxic effects on plants. It can displace certain essential metals from a wealth of metalloproteins, and thus disturb many normal physiological processes and cause severe developmental aberrant. The harmful effects of cadmium stress include, but are not limited to: reactive oxygen species overproduction, higher lipid hydroperoxide contents, and chloroplast structure change, which may lead to cell death. Plants have developed diverse mechanisms to alleviate environmental cadmium stress, e.g., cadmium pump and transporting cadmium into the leaf vacuoles. This mini-review focuses on the current research into understanding the cellular mechanisms of cadmium toxicity on cytoskeleton, vesicular trafficking and cell wall formation in plants. PMID:22499203

  15. Thin-film-based CdTe photovoltaic module characterization: Measurements and energy prediction improvement

    NASA Astrophysics Data System (ADS)

    Lay-Ekuakille, A.; Arnesano, A.; Vergallo, P.

    2013-01-01

    Photovoltaic characterization is a topic of major interest in the field of renewable energy. Monocrystalline and polycrystalline modules are mostly used and, hence characterized since many laboratories have data of them. Conversely, cadmium telluride (CdTe), as thin-film module are, in some circumstances, difficult to be used for energy prediction. This work covers outdoor testing of photovoltaic modules, in particular that regarding CdTe ones. The scope is to obtain temperature coefficients that best predict the energy production. A First Solar (K-275) module has been used for the purposes of this research. Outdoor characterizations were performed at Department of Innovation Engineering, University of Salento, Lecce, Italy. The location of Lecce city represents a typical site in the South Italy. The module was exposed outdoor and tested under clear sky conditions as well as under cloudy sky ones. During testing, the global-inclined irradiance varied between 0 and 1500 W/m2. About 37 000 I-V characteristics were acquired, allowing to process temperature coefficients as a function of irradiance and ambient temperature. The module was characterized by measuring the full temperature-irradiance matrix in the range from 50 to 1300 W/m2 and from -1 to 40 W/m2 from October 2011 to February 2012. Afterwards, the module energy output, under real conditions, was calculated with the "matrix method" of SUPSI-ISAAC and the results were compared with the five months energy output data of the same module measured with the outdoor energy yield facility in Lecce.

  16. Thin-film-based CdTe photovoltaic module characterization: measurements and energy prediction improvement.

    PubMed

    Lay-Ekuakille, A; Arnesano, A; Vergallo, P

    2013-01-01

    Photovoltaic characterization is a topic of major interest in the field of renewable energy. Monocrystalline and polycrystalline modules are mostly used and, hence characterized since many laboratories have data of them. Conversely, cadmium telluride (CdTe), as thin-film module are, in some circumstances, difficult to be used for energy prediction. This work covers outdoor testing of photovoltaic modules, in particular that regarding CdTe ones. The scope is to obtain temperature coefficients that best predict the energy production. A First Solar (K-275) module has been used for the purposes of this research. Outdoor characterizations were performed at Department of Innovation Engineering, University of Salento, Lecce, Italy. The location of Lecce city represents a typical site in the South Italy. The module was exposed outdoor and tested under clear sky conditions as well as under cloudy sky ones. During testing, the global-inclined irradiance varied between 0 and 1500 W/m(2). About 37,000 I-V characteristics were acquired, allowing to process temperature coefficients as a function of irradiance and ambient temperature. The module was characterized by measuring the full temperature-irradiance matrix in the range from 50 to 1300 W/m(2) and from -1 to 40 W/m(2) from October 2011 to February 2012. Afterwards, the module energy output, under real conditions, was calculated with the "matrix method" of SUPSI-ISAAC and the results were compared with the five months energy output data of the same module measured with the outdoor energy yield facility in Lecce.

  17. Organic photovoltaics

    NASA Astrophysics Data System (ADS)

    Leo, Karl

    2016-08-01

    Organic photovoltaics are on the verge of revolutionizing building-integrated photovoltaics. For other applications, however, several basic open scientific questions need answering to, in particular, further improve energy-conversion efficiency and lifetime.

  18. Cadmium Alternatives

    DTIC Science & Technology

    2012-08-01

    including cadmium! Cadmium Replacements (With MIL-DTL-38999 Designations) Zn/Ni (Class Z) Per ASTM B 841, type D (black) Electroless Nickel plus... Electroless nickel / PTFE (Durmalon®) Electroplated Aluminum (Alumiplate®) Electroplated tin-zinc (SnZn) Control: cadmium with hexavalent chromate... electroless nickel / PTFE performed well Electroplated aluminum performed did not perform well on connectors Electroplated aluminum did not

  19. Growth of lead tin telluride crystals in gels

    NASA Technical Reports Server (NTRS)

    Barber, Patrick G.

    1986-01-01

    Improved gels and several geometries were investigated for use in growing crystals. The use of lead sulfide test crystals proved workable, but it was impossible to obtain and maintain a sufficiently concentrated telluride ion solution to successfully grow lead telluride crystals. It appears that oxygen in the solution is capable of oxidizing the telluride ion up to tellurium metal. The method may still be successful, but only if precautions are taken to eliminate dissolved oxygen from the gels and aqueous solutions and to maintain a suitable concentration of telluride, Te(2)-(aq.).

  20. Photovoltaic device

    DOEpatents

    Reese, Jason A.; Keenihan, James R.; Gaston, Ryan S.; Kauffmann, Keith L.; Langmaid, Joseph A.; Lopez, Leonardo C.; Maak, Kevin D.; Mills, Michael E.; Ramesh, Narayan; Teli, Samar R.

    2015-06-02

    The present invention is premised upon an improved photovoltaic device ("PV device"), more particularly to an improved photovoltaic device with a multilayered photovoltaic cell assembly and a body portion joined at an interface region and including an intermediate layer, at least one interconnecting structural member, relieving feature, unique component geometry, or any combination thereof.

  1. Photovoltaic device

    DOEpatents

    Reese, Jason A; Keenihan, James R; Gaston, Ryan S; Kauffmann, Keith L; Langmaid, Joseph A; Lopez, Leonardo; Maak, Kevin D; Mills, Michael E; Ramesh, Narayan; Teli, Samar R

    2017-03-21

    The present invention is premised upon an improved photovoltaic device ("PV device"), more particularly to an improved photovoltaic device with a multilayered photovoltaic cell assembly and a body portion joined at an interface region and including an intermediate layer, at least one interconnecting structural member, relieving feature, unique component geometry, or any combination thereof.

  2. Photovoltaic device

    DOEpatents

    Reese, Jason A.; Keenihan, James R.; Gaston, Ryan S.; Kauffmann, Keith L.; Langmaid, Joseph A.; Lopez, Leonardo C.; Maak, Kevin D.; Mills, Michael E.; Ramesh, Narayan; Teli, Samar R.

    2015-09-01

    The present invention is premised upon an improved photovoltaic device ("PV device"), more particularly to an improved photovoltaic device (10) with a multilayered photovoltaic cell assembly (100) and a body portion (200) joined at an interface region (410) and including an intermediate layer (500), at least one interconnecting structural member (1500), relieving feature (2500), unique component geometry, or any combination thereof.

  3. Molecular modelling of some para-substituted aryl methyl telluride and diaryl telluride antioxidants

    NASA Astrophysics Data System (ADS)

    Frisell, H.; Engman, L.

    2000-08-01

    Quantum mechanical calculations using the 3-21G(d) basis-set were performed on some p-substituted diaryl tellurides and aryl methyl tellurides, and the corresponding cationic radicals of these compounds. Calculated relative radical stabilization energies (RSE:s) were shown to correlate with experimentally determined peak oxidation potentials ( R=0.93) and 125Te-NMR chemical shifts ( R=0.91). A good correlation was also observed between the RSE:s and the Mulliken charge at the tellurium atoms ( R=0.97). The results showed that Hartree-Fock calculations using the 3-21G(d) basis set was sufficiently accurate for estimating the impact of p-substituents in aryl tellurides on experimentally determined properties such as peak oxidation potentials and 125Te-NMR chemical shifts.

  4. Stability studies of cadmium telluride/cadmium sulfide thin film solar cells

    NASA Astrophysics Data System (ADS)

    Tetali, Bhaskar Reddy

    CdTe/CdS solar cells have shown great potential for terrestrial solar power applications. To be commercially viable they need to operate efficiently for about 30 years. CdS/CdTe solar cells fabricated at USF have shown record efficiencies upto 16.5% [46]. This research involves the study of thermal stress (TS) and light soaking (LS) on the stability of high efficiency (>10%) solar cells. The change in key electrical parameters Voc, FF, J sc, A and Jo are quantified for more than 2000 hours of stressing. The device degradation was found to increase with stress temperature for TS. Below 100°C, the changes were due to collection and recombination losses. Above 100°C, "shunting" mechanisms were found to start affecting the device performance. A fast drop in performance within the first 500 hours was observed. It is believed to be due to an increase in deep-level Cu-related defects that increase with stress temperature. Diffusion of Cu i+ ions from the back contact along CdTe grain boundaries had been previously reported [16]. An increase in light/dark J-V crossover and bulk Rs with stress time and temperature was observed. A slow degradation component attributed to Cu-related substitutional defect [23] formation/diffusion to the junction and CdS is proposed. This should compensate the CdS over time and increase its photoconductivity/resistivity. An improvement in the current collection and FF within 100 hours of LS was observed. This is possibly due to the enhancement of Cui + diffusion into the junction and CdS during LS as previously reported [16]. A reduction in light/dark J-V crossover was observed, possibly due to an increase in CdS doping and reduction in the CdS/SnO2 front contact barrier. However, a fast decrease in Voc and increase in recombination current was also observed in the first 1000 hours of LS. This is possibly due to the existence of higher concentration of Cu-related deep level defects at the junction. A larger decrease in Voc was found for LS than TS at the same operating temperature. A continuous drop in performance over time is observed for both TS and LS. The existence of a slow degradation component involving the formation/diffusion of Cu-related substitutional defects at the junction and CdS is proposed. The concentration of this defect is probably not high enough in CdS for LS samples to affect their photoconductivity and cause light/dark J-V crossover in 2000 hours.

  5. Two-Dimensional Cadmium Chloride Nanosheets in Cadmium Telluride Solar Cells

    DOE PAGES

    Perkins, Craig L.; Beall, Carolyn; Reese, Matthew O.; ...

    2017-05-12

    In this paper we make use of a liquid nitrogen-based thermomechanical cleavage technique and a surface analysis cluster tool to probe in detail the tin oxide/emitter interface at the front of completed CdTe solar cells. We show that this thermomechanical cleavage occurs within a few angstroms of the SnO2/emitter interface. An unexpectedly high concentration of chlorine at this interface, ~20%, was determined from a calculation that assumed a uniform chlorine distribution. Angle-resolved X-ray photoelectron spectroscopy was used to further probe the structure of the chlorine-containing layer, revealing that both sides of the cleave location are covered by one-third of amore » unit cell of pure CdCl2, a thickness corresponding to about one Cl-Cd-Cl molecular layer. We interpret this result in the context of CdCl2 being a true layered material similar to transition-metal dichalcogenides. Exposing cleaved surfaces to water shows that this Cl-Cd-Cl trilayer is soluble, raising questions pertinent to cell reliability. Our work provides new and unanticipated details about the structure and chemistry of front surface interfaces and should prove important to improving materials, processes, and reliability of next-generation CdTe-based solar cells.« less

  6. Fast surface temperature measurement of Teflon propellant-in-pulsed ablative discharges using HgCdTe photovoltaic cells

    SciTech Connect

    Antonsen, Erik L.; Burton, Rodney L.; Reed, Garrett A.; Spanjers, Gregory G.

    2006-10-15

    High-speed mercury cadmium telluride photovoltaic detectors, sensitive to infrared emission, are investigated as a means of measuring surface temperature on a microsecond time frame during pulsed ablative discharges with Teflon trade mark sign as the ablated material. Analysis is used to derive a governing equation for detector output voltage for materials with wavelength dependent emissivity. The detector output voltage is experimentally calibrated against thermocouples embedded in heated Teflon. Experimental calibration is performed with Teflon that has been exposed to {approx}200 pulsed discharges and non-plasma-exposed Teflon and is compared to theoretical predictions to analyze emissivity differences. The diagnostic capability is evaluated with measurements of surface temperature from the Teflon propellant of electric micropulsed plasma thrusters. During the pulsed current discharge, there is insufficient information to claim that the surface temperature is accurately measured. However, immediately following the discharge, the postpulse cooling curve is measured. The statistical spread of postpulse surface temperature from shot to shot, most likely due to arc constriction and localization, is investigated to determine an operational envelope for postpulse temperature and mass ablation. This information is useful for determining postpulse ablation contributions to mass loss as well as evaluation of theoretical discharge models currently under development.

  7. Investigation of Processing, Microstructures and Efficiencies of Polycrystalline CdTe Photovoltaic Films and Devices

    NASA Astrophysics Data System (ADS)

    Munshi, Amit Harenkumar

    CdTe based photovoltaics have been commercialized at multiple GWs/year level. The performance of CdTe thin film photovoltaic devices is sensitive to process conditions. Variations in deposition temperatures as well as other treatment parameters have a significant impact on film microstructure and device performance. In this work, extensive investigations are carried out using advanced microstructural characterization techniques in an attempt to relate microstructural changes due to varying deposition parameters and their effects on device performance for cadmium telluride based photovoltaic cells deposited using close space sublimation (CSS). The goal of this investigation is to apply advanced material characterization techniques to aid process development for higher efficiency CdTe based photovoltaic devices. Several techniques have been used to observe the morphological changes to the microstructure along with materials and crystallographic changes as a function of deposition temperature and treatment times. Traditional device structures as well as advanced structures with electron reflector and films deposited on Mg1-xZnxO instead of conventional CdS window layer are investigated. These techniques include Scanning Electron Microscopy (SEM) with Electron Back Scattered Diffraction (EBSD) and Energy dispersive X-ray spectroscopy (EDS) to study grain structure and High Resolution Transmission Electron Microscopy (TEM) with electron diffraction and EDS. These investigations have provided insights into the mechanisms that lead to change in film structure and device performance with change in deposition conditions. Energy dispersive X-ray spectroscopy (EDS) is used for chemical mapping of the films as well as to understand interlayer material diffusion between subsequent layers. Electrical performance of these devices has been studied using current density vs voltage plots. Devices with efficiency over 18% have been fabricated on low cost commercial glass substrates

  8. Thermal conductivity of bulk nanostructured lead telluride

    NASA Astrophysics Data System (ADS)

    Hori, Takuma; Chen, Gang; Shiomi, Junichiro

    2014-01-01

    Thermal conductivity of lead telluride with embedded nanoinclusions was studied using Monte Carlo simulations with intrinsic phonon transport properties obtained from first-principles-based lattice dynamics. The nanoinclusion/matrix interfaces were set to completely reflect phonons to model the maximum interface-phonon-scattering scenario. The simulations with the geometrical cross section and volume fraction of the nanoinclusions matched to those of the experiment show that the experiment has already reached the theoretical limit of thermal conductivity. The frequency-dependent analysis further identifies that the thermal conductivity reduction is dominantly attributed to scattering of low frequency phonons and demonstrates mutual adaptability of nanostructuring and local disordering.

  9. Reaction of divinyl telluride with thiourea

    SciTech Connect

    Amosova, S.V.; Gavrilova, G.M.; Tatarinova, A.A.; Gostevskaya, V.I.; Sinegovskaya, L.M.; Gusarova, N.K.; Trofimov, B.A.

    1986-07-20

    Earlier it was shown that with thiourea in the presence of equimolar amounts of acids divinyl sulfide forms 2H,6H-2,6-dimethyl-4-amino-1,3,5-dithiazines in the salt form with yields of 70-90%. In the case of other divinyl chalcogenides the formation of similar reaction products could be expected. However, cycloaddition of the isothiuronium salts (in this example with hydrochloric acid) is not observed in the case of divinyl telluride, but the Te-C bond is cleaved with the formation of an aldehyde and of complexes of tellurium with thiourea.

  10. Photovoltaic cell

    DOEpatents

    Gordon, Roy G.; Kurtz, Sarah

    1984-11-27

    In a photovoltaic cell structure containing a visibly transparent, electrically conductive first layer of metal oxide, and a light-absorbing semiconductive photovoltaic second layer, the improvement comprising a thin layer of transition metal nitride, carbide or boride interposed between said first and second layers.

  11. Cadmium sulfide thin films deposited by close spaced sublimation and cadmium sulfide/cadmium telluride solar cells

    NASA Astrophysics Data System (ADS)

    Marinskiy, Dmitriy Nikolaevich

    1998-12-01

    One of the applications of CdS films is as a window layer in CdTe and Cu(In,Ga)Sesb2 solar cells. The study of the optical and structural properties of CdS films deposited by close spaced sublimation as well as their influence on CdS/CdTe solar cell performance is part of the CdTe solar cell program at the University of South Florida. CdS films have been deposited by the close-spaced sublimation technique. The influence of the main process parameters, the substrate and source temperatures, and the ambient in the deposition chamber has been investigated. As-deposited films have been subjected to heat treatments in Hsb2 ambient, in CdClsb2 atmosphere, and in atmosphere with small amounts of oxygen. A special annealing chamber was built to carry out the annealing experiments in the presence of CdClsb2 vapor and oxygen. Several CSS chambers were assembled to study the influence of various process parameters simultaneously and validate the results. Results of scanning electron microscopy and photoluminescence measurements have been used as the primary characterization techniques. X-ray diffraction, electron microprobe analysis, and transmission measurements have also been carried out. It was found that as deposited CdS films have a hexagonal structure independent of the process parameters used. The presence of a CdO phase was detected in the samples grown with the highest oxygen concentration in the ambient. The resistivity of CdS films is controlled by intergrain barriers. Photoluminescence measurements showed the presence of oxygen-acceptor transition and a wide variation in the intensity of deep emission bands. The variation in the intensities was correlated with the variation in the deposition and annealing conditions. However, no correlation was found between the PL intensities of defect bands and cell performance. CdS/CdTe junctions have been fabricated using standard deposition and postgrowth techniques developed in the USF solar cells laboratory. All cells have been characterized by light and dark current-voltage (I-V) measurements. Based on the I-V results samples were selected for Quantum Efficiency (QE), and I-V-T measurements. The goal of this project was to understand what properties of CdS are important for the formation of a good electrical CdS/CdTe junction and high efficiency solar cells. It was found that passivation of the CdS/CdTe interface is essential to obtain efficient devices. The passivation can be achieved by promoting mixing at the interface or by performing a heat treatment of the CdS surface prior to the CdTe deposition. For the latter case no noticeable intermixing at the CdS/CdTe interface occurs. Therefore, it is suggested that the CdS/CdTe interface is the most critical part of the device and the condition of the CdS surface just before CdTe deposition is one of the factors controlling its formation. To date, the best device has shown an efficiency of 15.1% as verified at the National Renewable Energy Laboratory. It is the highest efficiency reported for an all CSS fabricated solar cell. The best all CSS device fabricated on LOF glass substrate demonstrated an efficiency of 14.3%, which is a new record for the USF solar cell laboratory.

  12. Thin-film photovoltaic power generation offers decreasing greenhouse gas emissions and increasing environmental co-benefits in the long term.

    PubMed

    Bergesen, Joseph D; Heath, Garvin A; Gibon, Thomas; Suh, Sangwon

    2014-08-19

    Thin-film photovoltaic (PV) technologies have improved significantly recently, and similar improvements are projected into the future, warranting reevaluation of the environmental implications of PV to update and inform policy decisions. By conducting a hybrid life cycle assessment using the most recent manufacturing data and technology roadmaps, we compare present and projected environmental, human health, and natural resource implications of electricity generated from two common thin-film PV technologies-copper indium gallium selenide (CIGS) and cadmium telluride (CdTe)-in the United States (U.S.) to those of the current U.S. electricity mix. We evaluate how the impacts of thin films can be reduced by likely cost-reducing technological changes: (1) module efficiency increases, (2) module dematerialization, (3) changes in upstream energy and materials production, and (4) end-of-life recycling of balance of system (BOS). Results show comparable environmental and resource impacts for CdTe and CIGS. Compared to the U.S. electricity mix in 2010, both perform at least 90% better in 7 of 12 and at least 50% better in 3 of 12 impact categories, with comparable land use, and increased metal depletion unless BOS recycling is ensured. Technological changes, particularly efficiency increases, contribute to 35-80% reductions in all impacts by 2030.

  13. A new occurrence of telluride minerals in South Carolina.

    USGS Publications Warehouse

    Bell, H.; Larson, R.R.

    1984-01-01

    A study of drill cores from the Haile gold mine, Lancaster County, South Carolina, has revealed grains containing large amounts of Te with various combinations of Pb, Ag and Au in pyrite. These telluride minerals have so far not been identified. The nearby Brewer mine, on the basis of chemical evidence, also contains tellurides. The probable telluride localities in South Carolina are now expanded to three, significantly increasing the few reports of Te minerals from the Au deposits of the southeastern Piedmont, many of which are now considered to be volcanogenic. The occurrence of telluride minerals in gold ore from the Haile-Brewer area may help to explain the divergence in Au/Ag ratios reported in chemical analyses of drill core, ore samples and production records. Te, in addition, may be useful in geochemical exploration programmes in the SE Piedmont, including programmes using heavy mineral concentrates derived from stream alluvium. -R.S.M.

  14. Photovoltaic materials.

    PubMed

    Perez-Albuerne, E A; Tyan, Y S

    1980-05-23

    Solid-state photovoltaic cells are feasible devices for converting solar energy directly to electricity. Recent cost reductions have spurred an incipient industry, but further advances in materials science and technology are needed before photovoltaic cells can compete with other sources for the supply of large amounts of energy. In this article energy loss mechanisms in solid-state photovoltaic cells are examined and related to materials properties. Various systems under development are reviewed which illustrate some key concepts, opportunities, and problems of this most promising emerging technology. Areas where contributions from innovative materials research would have a significant effect are also indicated.

  15. Advances in thin-film solar cells for lightweight space photovoltaic power

    NASA Technical Reports Server (NTRS)

    Landis, Geoffrey A.; Bailey, Sheila G.; Flood, Dennis J.

    1989-01-01

    The present stature and current research directions of photovoltaic arrays as primary power systems for space are reviewed. There have recently been great advances in the technology of thin-film solar cells for terrestrial applications. In a thin-film solar cell the thickness of the active element is only a few microns; transfer of this technology to space arrays could result in ultralow-weight solar arrays with potentially large gains in specific power. Recent advances in thin-film solar cells are reviewed, including polycrystalline copper-indium selenide (CuInSe2) and related I-III-VI2 compounds, polycrystalline cadmium telluride and related II-VI compounds, and amorphous silicon:hydrogen and alloys. The best experimental efficiency on thin-film solar cells to date is 12 percent AMO for CuIn Se2. This efficiency is likely to be increased in the next few years. The radiation tolerance of thin-film materials is far greater than that of single-crystal materials. CuIn Se2 shows no degradation when exposed to 1 MeV electrons. Experimental evidence also suggests that most of all of the radiation damage on thin-films can be removed by a low temperature anneal. The possibility of thin-film multibandgap cascade solar cells is discussed, including the tradeoffs between monolithic and mechanically stacked cells. The best current efficiency for a cascade is 12.5 percent AMO for an amorphous silicon on CuInSe2 multibandgap combination. Higher efficiencies are expected in the future. For several missions, including solar-electric propulsion, a manned Mars mission, and lunar exploration and manufacturing, thin-film photovolatic arrays may be a mission-enabling technology.

  16. Evaluating the economic viability of CdTe/CIS and CIGS/CIS tandem photovoltaic modules

    DOE PAGES

    Nanayakkara, Sanjini U.; Horowitz, Kelsey; Kanevce, Ana; ...

    2017-01-20

    In this paper, we analyze the potential cost competitiveness of two frameless, glass–glass thin-film tandem photovoltaic module structures, cadmium telluride (CdTe)/CuInSe2 (CIS) and CuIn0.3Ga0.7Se2 (CIGS)/CIS, based on the demonstrated cost of manufacturing the respective component cell technologies in high volume. To consider multiple economic scenarios, we base the CdTe/CIS module efficiency on the current industrial production of CdTe modules, while for CIGS/CIS, we use an aspirational estimate for CIGS efficiency. We focus on four-terminal mechanically stacked structures, thus avoiding the need to achieve current matching between the two cells. The top cell in such a tandem must have a transparentmore » back contact, which has not been successfully implemented to date. However, for the purpose of understanding the economic viability of both tandems, we assume that this can be implemented at a cost similar to that of sputtered indium tin oxide. The cost of both tandem module structures was found to be nearly identical on an equal-area basis and approximately $30/m2 higher than the single-junction alternatives. Both tandem modules are about 4% (absolute) more efficient than a module by using the top-cell material alone. We find that these tandem modules might reduce total system cost by as much as 11% in applications having a high area-related balance-of-system cost, such as area-constrained residential systems; however, the relative advantage of tandems decreases in the cases where balance-of-system costs are lower, such as in commercial and utility scale systems.« less

  17. Advances in thin-film solar cells for lightweight space photovoltaic power

    SciTech Connect

    Landis, G.A.; Bailey, S.G.; Flood, D.J.

    1989-01-01

    The present stature and current research directions of photovoltaic arrays as primary power systems for space are reviewed. There have recently been great advances in the technology of thin-film solar cells for terrestrial applications. In a thin-film solar cell the thickness of the active element is only a few microns; transfer of this technology to space arrays could result in ultralow-weight solar arrays with potentially large gains in specific power. Recent advances in thin-film solar cells are reviewed, including polycrystalline copper-indium selenide (CuInSe2) and related I-III-VI2 compounds, polycrystalline cadmium telluride and related II-VI compounds, and amorphous silicon:hydrogen and alloys. The best experimental efficiency on thin-film solar cells to date is 12 percent AMO for CuInSe2. This efficiency is likely to be increased in the next few years. The radiation tolerance of thin-film materials is far greater than that of single-crystal materials. CuInSe2 shows no degradation when exposed to 1 MeV electrons. Experimental evidence also suggests that most of all of the radiation damage on thin-films can be removed by a low temperature anneal. The possibility of thin-film multibandgap cascade solar cells is discussed, including the tradeoffs between monolithic and mechanically stacked cells. The best current efficiency for a cascade is 12.5 percent AMO for an amorphous silicon on CuInSe2 multibandgap combination. Higher efficiencies are expected in the future. For several missions, including solar-electric propulsion, a manned Mars mission, and lunar exploration and manufacturing, thin-film photovolatic arrays may be a mission-enabling technology.

  18. Photovoltaic Materials

    SciTech Connect

    Duty, C.; Angelini, J.; Armstrong, B.; Bennett, C.; Evans, B.; Jellison, G. E.; Joshi, P.; List, F.; Paranthaman, P.; Parish, C.; Wereszczak, A.

    2012-10-15

    modules in the field for 25 years. Under this project, Ferro leveraged world leading analytical capabilities at ORNL to characterize the paste-to-silicon interface microstructure and develop high efficiency next generation contact pastes. Ampulse Corporation is developing a revolutionary crystalline-silicon (c-Si) thin-film solar photovoltaic (PV) technology. Utilizing uniquely-textured substrates and buffer materials from the Oak Ridge National Laboratory (ORNL), and breakthroughs in Hot-Wire Chemical Vapor Deposition (HW-CVD) techniques in epitaxial silicon developed at the National Renewable Energy Laboratory (NREL), Ampulse is creating a solar technology that is tunable in silicon thickness, and hence in efficiency and economics, to meet the specific requirements of multiple solar PV applications. This project focused on the development of a high rate deposition process to deposit Si, Ge, and Si1-xGex films as an alternate to hot-wire CVD. Mossey Creek Solar is a start-up company with great expertise in the solar field. The primary interest is to create and preserve jobs in the solar sector by developing high-yield, low-cost, high-efficiency solar cells using MSC-patented and -proprietary technologies. The specific goal of this project was to produce large grain formation in thin, net-shape-thickness mc-Si wafers processed with high-purity silicon powder and ORNL's plasma arc lamp melting without introducing impurities that compromise absorption coefficient and carrier lifetime. As part of this project, ORNL also added specific pieces of equipment to enhance our ability to provide unique insight for the solar industry. These capabilities include a moisture barrier measurement system, a combined physical vapor deposition and sputtering system dedicated to cadmium-containing deposits, adeep level transient spectroscopy system useful for identifying defects, an integrating sphere photoluminescence system, and a high-speed ink jet printing system. These tools were

  19. PHOTOVOLTAIC AND THERMOELECTRIC SOLAR ENERGY CONVERSION USING THIN FILMS,

    DTIC Science & Technology

    Solar energy conversion by the use of thin films in photovoltaic and thermoelectric devices is discussed. Experimental work is presented on the fabrication of a thin film cadmium sulfide cell which utilizes the photovoltaic effect. A theoretical investigation is made of the temperature differences obtainable in space by using thin, light-weight plastic sheets, and the use of such plastics for thermoelectric generators is discussed. Temperature differences of several hundred centrigrade degrees can be obtained. (Author)

  20. NCPV preprints for the 2. world conference on photovoltaic solar energy conversion

    SciTech Connect

    1998-09-01

    The proceedings contain 26 papers arranged under the following topical sections: Silicon (3 papers); Thin-film PV technologies (11 papers): amorphous silicon, cadmium telluride, copper indium diselenide, and high efficiency devices; Module and BOS manufacturing (2 papers); Cell, module, and system testing (7 papers); and Market development (3 papers). Selected papers have been indexed separately for inclusion in the Energy Science and Technology Database.

  1. High Throughput Manufacturing of Thin-Film CdTe Photovoltaic Materials; Final Subcontract Report, 16 November 1993-31 December 1998

    SciTech Connect

    Sandwisch, D. W.

    1999-09-02

    This report describes work performed by Solar Cells, Inc. (SCI), during this Photovoltaic Manufacturing Technology (PVMaT) subcontract. Cadmium telluride (CdTe) is recognized as one of the leading materials for low-cost photovoltaic modules. SCI has developed this technology and is preparing to scale its pilot production capabilities to a multi-megawatt level. This four-phase PVMaT subcontract supports these efforts. The work was related to product definition, process definition, equipment engineering, and support programs development. In the area of product definition and demonstration, two products were specified and demonstrated-a grid-connected, frameless, high-voltage product that incorporates a pigtail potting design and a remote low-voltage product that may be framed and may incorporate a junction box. SCI produced a 60.3-W thin-film CdTe module with total-area efficiency of 8.4%; SCI also improved module pass rate on the interim qualification test protocol from less than 20% to 100% as a result of work related to the subcontract. In the manufacturing process definition area, the multi-megawatt manufacturing process was defined, several of the key processes were demonstrated, and the process was refined and proven on a 100-kW pilot line that now operates as a 250-kW line. In the area of multi-megawatt manufacturing-line conceptual design review, SCI completed a conceptual layout of the multi-megawatt lines. The layout models the manufacturing line and predicts manufacturing costs. SCI projected an optimized capacity, two-shift/day operation of greater than 25 MW at a manufacturing cost of below $1.00/W.

  2. Thin-Film Photovoltaics: Status and Applications to Space Power

    NASA Technical Reports Server (NTRS)

    Landis, Geoffrey A.; Hepp, Aloysius F.

    1991-01-01

    The potential applications of thin film polycrystalline and amorphous cells for space are discussed. There have been great advances in thin film solar cells for terrestrial applications; transfer of this technology to space applications could result in ultra low weight solar arrays with potentially large gains in specific power. Recent advances in thin film solar cells are reviewed, including polycrystalline copper iridium selenide and related I-III-VI2 compounds, polycrystalline cadmium telluride and related II-VI compounds, and amorphous silicon alloys. The possibility of thin film multi bandgap cascade solar cells is discussed.

  3. Applications of thin-film photovoltaics for space

    NASA Technical Reports Server (NTRS)

    Landis, Geoffrey A.; Hepp, Aloysius F.

    1991-01-01

    The authors discuss the potential applications of thin-film polycrystalline and amorphous cells for space. There have been great advances in thin-film solar cells for terrestrial applications. Transfer of this technology to space applications could result in ultra low-weight solar arrays with potentially large gains in specific power. Recent advances in thin-film solar cells are reviewed, including polycrystalline copper indium selenide and related I-III-VI2 compounds, polycrystalline cadmium telluride and related II-VI compounds, and amorphous silicon arrays. The possibility of using thin-film multi-bandgap cascade solar cells is discussed.

  4. Applications of thin-film photovoltaics for space

    NASA Technical Reports Server (NTRS)

    Landis, Geoffrey A.; Hepp, Aloysius F.

    1991-01-01

    The authors discuss the potential applications of thin-film polycrystalline and amorphous cells for space. There have been great advances in thin-film solar cells for terrestrial applications. Transfer of this technology to space applications could result in ultra low-weight solar arrays with potentially large gains in specific power. Recent advances in thin-film solar cells are reviewed, including polycrystalline copper indium selenide and related I-III-VI2 compounds, polycrystalline cadmium telluride and related II-VI compounds, and amorphous silicon arrays. The possibility of using thin-film multi-bandgap cascade solar cells is discussed.

  5. Thin-Film Photovoltaics: Status and Applications to Space Power

    NASA Technical Reports Server (NTRS)

    Landis, Geoffrey A.; Hepp, Aloysius F.

    1991-01-01

    The potential applications of thin film polycrystalline and amorphous cells for space are discussed. There have been great advances in thin film solar cells for terrestrial applications; transfer of this technology to space applications could result in ultra low weight solar arrays with potentially large gains in specific power. Recent advances in thin film solar cells are reviewed, including polycrystalline copper iridium selenide and related I-III-VI2 compounds, polycrystalline cadmium telluride and related II-VI compounds, and amorphous silicon alloys. The possibility of thin film multi bandgap cascade solar cells is discussed.

  6. General solvothermal approach to synthesize telluride nanotubes for thermoelectric applications.

    PubMed

    Liu, Shuai; Peng, Nan; Bai, Yu; Xu, Huiyan; Ma, D Y; Ma, Fei; Xu, Kewei

    2017-03-27

    One-dimensional tellurides are good candidates for thermoelectric applications, but the fabrication of telluride nanotubes is still challenging. To this end, the solvothermal approach is proposed to synthesize Bi2Te3, PbTe, CuxTe and Ag2Te nanotubes. In this scheme, single-crystal Te nanotubes are produced first and then used as the sacrificed template for epitaxial growth of metal telluride. It was demonstrated that polycrystalline telluride nanotubes are produced. Considering Bi2Te3 nanotubes as an example, the pellets are prepared by spark plasma sintering, and the thermoelectric properties are measured. Compared to the nanowire counterpart, the higher-energy barrier to electrons at the grain boundaries (GBs) leads to an optimized power factor of 1.04 mW m(-1) K(-2) at 373 K in the nanotube samples. Furthermore, the thermal conductivity of nanotubes is in the range of 0.503-0.617 W m(-1) K(-1), which is much smaller than that of the nanowires. The ultralow thermal conductivity could be attributed to both the higher potential barrier of GBs and the additional scattering of phonons at the side walls of the nanotubes. In all, a ZT value of 0.74 was obtained at 373 K, which is much higher than that of nanowires. This synthesis route is ready to be extended to other telluride nanotubes.

  7. Ion beam sputter deposited zinc telluride films

    NASA Technical Reports Server (NTRS)

    Gulino, D. A.

    1985-01-01

    Zinc telluride is of interest as a potential electronic device material, particularly as one component in an amorphous superlattice, which is a new class of interesting and potentially useful materials. Some structural and electronic properties of ZnTe films deposited by argon ion beam sputter depoairion are described. Films (up to 3000 angstroms thick) were deposited from a ZnTe target. A beam energy of 1000 eV and a current density of 4 mA/sq. cm. resulted in deposition rates of approximately 70 angstroms/min. The optical band gap was found to be approximately 1.1 eV, indicating an amorphous structure, as compared to a literature value of 2.26 eV for crystalline material. Intrinsic stress measurements showed a thickness dependence, varying from tensile for thicknesses below 850 angstroms to compressive for larger thicknesses. Room temperature conductivity measurement also showed a thickness dependence, with values ranging from 1.86 x to to the -6/ohm. cm. for 300 angstrom film to 2.56 x 10 to the -1/ohm. cm. for a 2600 angstrom film. Measurement of the temperature dependence of the conductivity for these films showed complicated behavior which was thickness dependent. Thinner films showed at least two distinct temperature dependent conductivity mechanisms, as described by a Mott-type model. Thicker films showed only one principal conductivity mechanism, similar to what might be expected for a material with more crystalline character.

  8. Ion beam sputter deposited zinc telluride films

    NASA Technical Reports Server (NTRS)

    Gulino, D. A.

    1986-01-01

    Zinc telluride is of interest as a potential electronic device material, particularly as one component in an amorphous superlattice, which is a new class of interesting and potentially useful materials. Some structural and electronic properties of ZnTe films deposited by argon ion beam sputter deposition are described. Films (up to 3000 angstroms thick) were deposited from a ZnTe target. A beam energy of 1000 eV and a current density of 4 mA/sq cm resulted in deposition rates of approximately 70 angstroms/min. The optical band gap was found to be approximately 1.1 eV, indicating an amorphous structure, as compared to a literature value of 2.26 eV for crystalline material. Intrinsic stress measurements showed a thickness dependence, varying from tensile for thicknesses below 850 angstroms to compressive for larger thicknesses. Room temperature conductivity measurement also showed a thickness dependence, with values ranging from 1.86 x 10 to the -6th/ohm cm for 300 angstrom film to 2.56 x 10 to the -1/ohm cm for a 2600 angstrom film. Measurement of the temperature dependence of the conductivity for these films showed complicated behavior which was thickness dependent. Thinner films showed at least two distinct temperature dependent conductivity mechanisms, as described by a Mott-type model. Thicker films showed only one principal conductivity mechanism, similar to what might be expected for a material with more crystalline character.

  9. Photovoltaic Engineering

    NASA Technical Reports Server (NTRS)

    2005-01-01

    The Ohio Aerospace Institute through David Scheiman and Phillip Jenkins provided the Photovoltaics Branch at the NASA Glenn Research Center (GRC) with expertise in photovoltaic (PV) research, flight experiments and solar cell calibration. NASA GRC maintains the only world-class solar cell calibration and measurement facility within NASA. GRC also has a leadership role within the solar cell calibration community, and is leading the effort to develop ISO standards for solar cell calibration. OAI scientists working under this grant provided much of the expertise and leadership in this area.

  10. Spectroscopic Ellipsometry Studies of Ag and ZnO Thin Films and Their Interfaces for Thin Film Photovoltaics

    NASA Astrophysics Data System (ADS)

    Sainju, Deepak

    Many modern optical and electronic devices, including photovoltaic devices, consist of multilayered thin film structures. Spectroscopic ellipsometry (SE) is a critically important characterization technique for such multilayers. SE can be applied to measure key parameters related to the structural, optical, and electrical properties of the components of multilayers with high accuracy and precision. One of the key advantages of this non-destructive technique is its capability of monitoring the growth dynamics of thin films in-situ and in real time with monolayer level precision. In this dissertation, the techniques of SE have been applied to study the component layer materials and structures used as back-reflectors and as the transparent contact layers in thin film photovoltaic technologies, including hydrogenated silicon (Si:H), copper indium-gallium diselenide (CIGS), and cadmium telluride (CdTe). The component layer materials, including silver and both intrinsic and doped zinc oxide, are fabricated on crystalline silicon and glass substrates using magnetron sputtering techniques. These thin films are measured in-situ and in real time as well as ex-situ by spectroscopic ellipsometry in order to extract parameters related to the structural properties, such as bulk layer thickness and surface roughness layer thickness and their time evolution, the latter information specific to real time measurements. The index of refraction and extinction coefficient or complex dielectric function of a single unknown layer can also be obtained from the measurement versus photon energy. Applying analytical expressions for these optical properties versus photon energy, parameters that describe electronic transport, such as electrical resistivity and electron scattering time, can be extracted. The SE technique is also performed as the sample is heated in order to derive the effects of annealing on the optical properties and derived electrical transport parameters, as well as the

  11. Optimization of chemical bath deposited cadmium sulfide thin films

    SciTech Connect

    Oladeji, I.O.; Chow, L.

    1997-07-01

    Cadmium sulfide (CdS) is known to be an excellent heterojunction partner of p-type cadmium telluride (CdTe) or p-type copper indium diselenide (CuInSe{sub 2}) due essentially to its high electron affinity. It is widely used as a window material in high efficiency thin-film solar cells based on CdTe or CuInSe{sub 2} owing to its transparency and photoconductivity among other properties. The authors report the optimization of CdS thin film grown by chemical bath deposition where homogeneous reactions are minimized. The optimum parameters have enabled them to maximize the thickness of the deposited film in a single dip and to grow thicker films by periodically replenishing the concentration of reactants while the substrate remains continuously dipped in the reaction bath. Characterization results reveal the deposited CdS films exhibit improved optical and electrical properties.

  12. Photovoltaic energy

    NASA Astrophysics Data System (ADS)

    1990-01-01

    In 1989, the U.S. photovoltaic industry enjoyed a growth rate of 30 percent in sales for the second year in a row. This sends a message that the way we think about electricity is changing. Instead of big energy projects that perpetuate environmental and economic damage, there is a growing trend toward small renewable technologies that are well matched to end-user needs and operating conditions. As demand grows and markets expand, investment capital will be drawn to the industry and new growth trends will emerge. The photovoltaic industry around the world achieved record shipments also. Worldwide shipments of photovoltaic (PV) modules for 1989 totaled more than 40 megawatts (MW), nearly a 20 percent increase over last year's shipments. The previous two years showed increases in worldwide shipments of 23 and 25 percent, respectively. If this growth rate continues through the 1990s, as industry back orders would indicate, 300 to 1000 MW of PV-supplied power could be on line by 2000. Photovoltaic systems have low environmental impact and they are inexpensive to operate and maintain. Using solid-state technology, PV systems directly convert sunlight to electricity without high-temperature fluids or moving parts that could cause mechanical failure. This makes the technology very reliable.

  13. Photovoltaic concentrators

    NASA Astrophysics Data System (ADS)

    Boes, E. C.

    1980-01-01

    A status report on photovoltaic (PV) concentrators technology is presented. The major topics covered are as follows: (1) current PV concentrator arrays; designs, performances, and costs; (2) current PV concentrator array components; cells and cell assemblies, optical concentrators, support structures, tracking, and drive; (3) design of PV concentrator arrays; and (4) array manufacturing technology.

  14. Photovoltaics: Life-cycle Analyses

    SciTech Connect

    Fthenakis V. M.; Kim, H.C.

    2009-10-02

    Life-cycle analysis is an invaluable tool for investigating the environmental profile of a product or technology from cradle to grave. Such life-cycle analyses of energy technologies are essential, especially as material and energy flows are often interwoven, and divergent emissions into the environment may occur at different life-cycle-stages. This approach is well exemplified by our description of material and energy flows in four commercial PV technologies, i.e., mono-crystalline silicon, multi-crystalline silicon, ribbon-silicon, and cadmium telluride. The same life-cycle approach is applied to the balance of system that supports flat, fixed PV modules during operation. We also discuss the life-cycle environmental metrics for a concentration PV system with a tracker and lenses to capture more sunlight per cell area than the flat, fixed system but requires large auxiliary components. Select life-cycle risk indicators for PV, i.e., fatalities, injures, and maximum consequences are evaluated in a comparative context with other electricity-generation pathways.

  15. Photovoltaic Roofs

    NASA Technical Reports Server (NTRS)

    Drummond, R. W., Jr.; Shepard, N. F., Jr.

    1984-01-01

    Solar cells perform two functions: waterproofing roof and generating electricity. Sections through horizontal and slanting joints show overlapping modules sealed by L-section rubber strips and side-by-side modules sealed by P-section strips. Water seeping through seals of slanting joints drains along channels. Rooftop photovoltaic array used watertight south facing roof, replacing shingles, tar, and gravel. Concept reduces cost of residential solar-cell array.

  16. Photovoltaic fabrics

    DTIC Science & Technology

    2015-04-22

    during wire fabrication. Weaving was demonstrated for both military-type nylon -cotton blend (NYCO) warp fibers and cotton-polyester warp fibers. A...Lowell, MA 01852 14. ABSTRACT This report describes a project to improve photovoltaic fabrics. It had four objectives: 1) Efficiency – make PV wires on...a continuous basis that exhibit 7% efficiency; 2) Automated Welding – demonstrate an automated means of interconnecting the electrodes of one wire

  17. Region 8: Colorado Telluride Adequate Letter (8/17/2011)

    EPA Pesticide Factsheets

    This March 4, 2011 letter from EPA to Chistopher E. Urbina M.D., MPH, Colorado Department of Public Health and Environment states that EPA has found that the Telluride, CO PM10 maintenance plan and the 2021 motor vehicle emisssions budget (MVEB) adequate

  18. Ultrasonication of Bismuth Telluride Nanocrystals Fabricated by Solvothermal Method

    NASA Technical Reports Server (NTRS)

    Chu, Sang-Hyon; Choi, Sang H.; Kim, Jae-Woo; King, Glen C.; Elliott, James R.

    2006-01-01

    The objective of this study is to evaluate the effect of ultrasonication on bismuth telluride nanocrystals prepared by solvothermal method. In this study, a low dimensional nanocrystal of bismuth telluride (Bi2Te3) was synthesized by a solvothermal process in an autoclave at 180 C and 200 psi. During the solvothermal reaction, organic surfactants effectively prevented unwanted aggregation of nanocrystals in a selected solvent while controlling the shape of the nanocrystal. The atomic ratio of bismuth and tellurium was determined by energy dispersive spectroscopy (EDS). The cavitational energy created by the ultrasonic probe was varied by the ultrasonication process time, while power amplitude remained constant. The nanocrystal size and its size distribution were measured by field emission scanning electron microscopy (FESEM) and a dynamic light scattering system. When the ultrasonication time increased, the average size of bismuth telluride nanocrystal gradually increased due to the direct collision of nanocrystals. The polydispersity of the nanocrystals showed a minimum when the ultrasonication was applied for 5 min. Keywords: bismuth telluride, nanocrystal, low-dimensional, ultrasonication, solvothermal

  19. Living with wildfire in Telluride Fire Protection District, Colorado

    Treesearch

    James R. Meldrum; Lilia C. Falk; Jamie Gomez; Christopher M. Barth; Hannah Brenkert-Smith; Travis Warziniack; Patricia A. Champ

    2017-01-01

    Residents in the wildland-urban interface can play an important role in reducing wildfires’ negative effects by performing wildfire risk mitigation on their properties. This report offers insight into the wildfire risk mitigation activities and related considerations such as attitudes, experiences, and concern about wildfire, for residents of the Telluride Fire...

  20. VIEW, LOOKING SOUTHEAST, OF TELLURIDE IRON WORKS RETORT USED FOR ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    VIEW, LOOKING SOUTHEAST, OF TELLURIDE IRON WORKS RETORT USED FOR FLASHING MERCURY OFF OF GOLD TO CREATE SOFT INGOTS CALLED "SPONGES." AT RIGHT ARE SAFES FOR STORING 22-POUND SPONGES WORTH OVER $60,000 EACH, CA. 1985. - Shenandoah-Dives Mill, 135 County Road 2, Silverton, San Juan County, CO

  1. Cadmium and the kidney.

    PubMed Central

    Friberg, L

    1984-01-01

    The paper is a review of certain aspects of importance of cadmium and the kidney regarding the assessment of risks and understanding of mechanisms of action. The review discusses the following topics: history and etiology of cadmium-induced kidney dysfunction and related disorders; cadmium metabolism, metallothionein and kidney dysfunction; cadmium in urine as indicator of body burden, exposure and kidney dysfunction; cadmium levels in kidney and liver as indicators of kidney dysfunction; characteristics of early kidney dysfunction; the critical concentration concept; critical concentrations of cadmium in kidney cortex; and prognosis. PMID:6734547

  2. Decentalized solar photovoltaic energy systems

    SciTech Connect

    Krupka, M. C.

    1980-09-01

    Environmental data for decentralized solar photovoltaic systems have been generated in support of the Technology Assessment of Solar Energy Systems program (TASE). Emphasis has been placed upon the selection and use of a model residential photovoltaic system to develop and quantify the necessary data. The model consists of a reference home located in Phoenix, AZ, utilizing a unique solar cell array-roof shingle combination. Silicon solar cells, rated at 13.5% efficiency at 28/sup 0/C and 100 mW/cm/sup 2/ (AMI) insolation are used to generate approx. 10 kW (peak). An all-electric home is considered with lead-acid battery storage, dc-ac inversion and utility backup. The reference home is compared to others in regions of different insolation. Major material requirements, scaled to quad levels of end-use energy include significant quantities of silicon, copper, lead, antimony, sulfuric acid and plastics. Operating residuals generated are negligible with the exception of those from the storage battery due to a short (10-year) lifetime. A brief general discussion of other environmental, health, and safety and resource availability impacts is presented. It is suggested that solar cell materials production and fabrication may have the major environmental impact when comparing all facets of photovoltaic system usage. Fabrication of the various types of solar cell systems involves the need, handling, and transportation of many toxic and hazardous chemicals with attendant health and safety impacts. Increases in production of such materials as lead, antimony, sulfuric acid, copper, plastics, cadmium and gallium will be required should large scale usage of photovoltaic systems be implemented.

  3. Nanostructured photovoltaics

    NASA Astrophysics Data System (ADS)

    Fu, Lan; Tan, H. Hoe; Jagadish, Chennupati

    2013-01-01

    Energy and the environment are two of the most important global issues that we currently face. The development of clean and sustainable energy resources is essential to reduce greenhouse gas emission and meet our ever-increasing demand for energy. Over the last decade photovoltaics, as one of the leading technologies to meet these challenges, has seen a continuous increase in research, development and investment. Meanwhile, nanotechnology, which is considered to be the technology of the future, is gradually revolutionizing our everyday life through adaptation and incorporation into many traditional technologies, particularly energy-related technologies, such as photovoltaics. While the record for the highest efficiency is firmly held by multijunction III-V solar cells, there has never been a shortage of new research effort put into improving the efficiencies of all types of solar cells and making them more cost effective. In particular, there have been extensive and exciting developments in employing nanostructures; features with different low dimensionalities, such as quantum wells, nanowires, nanotubes, nanoparticles and quantum dots, have been incorporated into existing photovoltaic technologies to enhance their performance and/or reduce their cost. Investigations into light trapping using plasmonic nanostructures to effectively increase light absorption in various solar cells are also being rigorously pursued. In addition, nanotechnology provides researchers with great opportunities to explore the new ideas and physics offered by nanostructures to implement advanced solar cell concepts such as hot carrier, multi-exciton and intermediate band solar cells. This special issue of Journal of Physics D: Applied Physics contains selected papers on nanostructured photovoltaics written by researchers in their respective fields of expertise. These papers capture the current excitement, as well as addressing some open questions in the field, covering topics including the

  4. Basic photovoltaics

    SciTech Connect

    Zweibel, K.

    1984-01-01

    Here is a photovoltaics guide that converts highly technical information into language that can be understood by both scientists and non-scientists. It provides an introduction to solar cell technology, explaining how PV cells work, how they are manufactured, and how they are put together into effective energy-producing systems. The authors investigate a new PV technology based on an altered form of silicon capable of producing conversion efficiencies of 10% to 15%. They explain the PV effect, loss mechanisms, and advances in fabrication methods.

  5. Aquatic Life Criteria - Cadmium

    EPA Pesticide Factsheets

    Documents pertaining to 2016 Acute and Chronic Aquatic Life Ambient Water Quality Criteria for Cadmium (Freshwater, Estuarine/marine). These documents contain the safe levels of Cadmium in water that should protect to the majority of species.

  6. Cadmium and zinc relationships.

    PubMed

    Elinder, C G; Piscator, M

    1978-08-01

    Cadmium and zinc concentrations in kidney and liver have been measured under different exposure situations in different species including man. The results show that zinc increases almost equimolarly with cadmium in kidney after long-term low-level exposure to cadmium, e.g., in man, horse, pig, and lamb. In contrast, the increase of zinc follows that of cadmium to only a limited extent, e.g., in guinea pig, rabbit, rat, mouse, and chicks. In liver, the cadmium--zinc relationship seems to be reversed in such a way that zinc increases with cadmium more markedly in laboratory animals than in higher mammals. These differences between cadmium and zinc relationships in humans and large farm animals and those in commonly used laboratory animals must be considered carefully before experimental data on cadmium and zinc relationships in laboratory animals can be extrapolated to humans.

  7. Photovoltaics: New opportunities for utilities

    SciTech Connect

    Not Available

    1991-07-01

    This publication presents information on photovoltaics. The following topics are discussed: Residential Photovoltaics: The New England Experience Builds Confidence in PV; Austin's 300-kW Photovoltaic Power Station: Evaluating the Breakeven Costs; Residential Photovoltaics: The Lessons Learned; Photovoltaics for Electric Utility Use; Least-Cost Planning: The Environmental Link; Photovoltaics in the Distribution System; Photovoltaic Systems for the Rural Consumer; The Issues of Utility-Intertied Photovoltaics; and Photovoltaics for Large-Scale Use: Costs Ready to Drop Again.

  8. Photovoltaic solar concentrator

    DOEpatents

    Nielson, Gregory N.; Cruz-Campa, Jose Luis; Okandan, Murat; Resnick, Paul J.; Sanchez, Carlos Anthony; Clews, Peggy J.; Gupta, Vipin P.

    2015-09-08

    A process including forming a photovoltaic solar cell on a substrate, the photovoltaic solar cell comprising an anchor positioned between the photovoltaic solar cell and the substrate to suspend the photovoltaic solar cell from the substrate. A surface of the photovoltaic solar cell opposite the substrate is attached to a receiving substrate. The receiving substrate may be bonded to the photovoltaic solar cell using an adhesive force or a metal connecting member. The photovoltaic solar cell is then detached from the substrate by lifting the receiving substrate having the photovoltaic solar cell attached thereto and severing the anchor connecting the photovoltaic solar cell to the substrate. Depending upon the type of receiving substrate used, the photovoltaic solar cell may be removed from the receiving substrate or remain on the receiving substrate for use in the final product.

  9. Cadmium sulfide membranes

    DOEpatents

    Spanhel, Lubomir; Anderson, Marc A.

    1992-07-07

    A method is described for the creation of novel q-effect cadmium sulfide membranes. The membranes are made by first creating a dilute cadmium sulfide colloid in aqueous suspension and then removing the water and excess salts therefrom. The cadmium sulfide membrane thus produced is luminescent at room temperature and may have application in laser fabrication.

  10. Cadmium sulfide membranes

    DOEpatents

    Spanhel, Lubomir; Anderson, Marc A.

    1991-10-22

    A method is described for the creation of novel q-effect cadmium sulfide membranes. The membranes are made by first creating a dilute cadmium sulfide colloid in aqueous suspension and then removing the water and excess salts therefrom. The cadmium sulfide membrane thus produced is luminescent at room temperature and may have application in laser fabrication.

  11. Organic photovoltaics

    NASA Astrophysics Data System (ADS)

    Demming, Anna; Krebs, Frederik C.; Chen, Hongzheng

    2013-12-01

    Energy inflation, the constant encouragement to economize on energy consumption and the huge investments in developing alternative energy resources might seem to suggest that there is a global shortage of energy. Far from it, the energy the Sun beams on the Earth each hour is equivalent to a year's supply, even at our increasingly ravenous rate of global energy consumption [1]. But it's not what you have got it's what you do with it. Hence the intense focus on photovoltaic research to find more efficient ways to harness energy from the Sun. Recently much of this research has centred on organic solar cells since they offer simple, low-cost, light-weight and large-area flexible photovoltaic structures. This issue with guest editors Frederik C Krebs and Hongzheng Chen focuses on some of the developments at the frontier of organic photovoltaic technology. Improving the power conversion efficiency of organic photovoltaic systems, while maintaining the inherent material, economic and fabrication benefits, has absorbed a great deal of research attention in recent years. Here significant progress has been made with reports now of organic photovoltaic devices with efficiencies of around 10%. Yet operating effectively across the electromagnetic spectrum remains a challenge. 'The trend is towards engineering low bandgap polymers with a wide optical absorption range and efficient hole/electron transport materials, so that light harvesting in the red and infrared region is enhanced and as much light of the solar spectrum as possible can be converted into an electrical current', explains Mukundan Thelakkat and colleagues in Germany, the US and UK. In this special issue they report on how charge carrier mobility and morphology of the active blend layer in thin film organic solar cells correlate with device parameters [2]. The work contributes to a better understanding of the solar-cell characteristics of polymer:fullerene blends, which form the material basis for some of the most

  12. Impact of back-contact materials on performance and stability of cadmium sulfide/cadmium telluride solar cells

    NASA Astrophysics Data System (ADS)

    Demtsu, Samuel H.

    Thin-film CdTe based solar cells are one of the leading contenders for providing lowcost and pollution-free energy, The formation of a stable, low resistance, non-rectifying contact to p-CdTe thin-film is one of the major and critical challenges associated with this technology in the fabrication of efficient and stable solar cells. The premise of this thesis is a systematic study of the impact of back-contact materials on the initial performance and the degradation of CdS/CdTe solar cells. Two different back-contact structures that incorporate Cu as a key element are investigated in this study: (a) Cu1.4Te:HgTe-doped graphite and (b) evaporated-Cu back contacts. The effect of Cu inclusion is not limited to the back-contact layer where it is deposited. Cu is a known fast diffuser in p-CdTe, and therefore, a significant amount of Cu reaches both the CdTe and US layers. Hence, the effect of the presence of Cu on the individual layers: back-contact, the absorber (CdTe), and the window (CdS) layers is discussed respectively. The effect of different metals used to form the current-carrying electrode following the Cu layer is also evaluated. Devices are studied through current-voltage (JV) measurements at different temperatures and intensities, quantum efficiency (QE) measurements under light and voltage bias, capacitance-voltage (CV), drive-level-capacitance-profiling (DLCP), and time-resolved photoluminescence (TRPL) measurements. Numerical simulation is also used to reproduce and explain some of the experimental results. In devices made without Cu, a current-limiting effect, rollover (distortion) in the current-voltage characteristic, was observed. With the inclusion of a small amount of Cu (5-nm), however, the distortion disappeared, and higher FF was obtained. The performance of these devices was comparable to devices made with the standard Cu-doped graphite paste contacts when the same CdTe absorber is used. Small amount of Cu (5-20 nm) partially diffused into the CdTe absorber layer resulted in increased hole density, and improved Vo. However, excess Cu (100 nm) created recombination centers that significantly reduced the FF and Voc. The presence of Cu in the CdS window layer had minimal effect on device performance. It was found, however, to be responsible for anomalies such as dark/light crossover and distortions in apparent quantum efficiency, neither of which has a direct impact on the device performance. Numerous metals: Au; Cr, Pd, Pt, and Ni were evaporated, following the Cu layer, and were found to form good current-carrying electrodes. Ag and Al, however, did not perform well in this role. With exposure to elevated temperature (60-120°C) for extended period of time, diffusion of Cu from the back contact was found to cause back-contact degradation and additional increases in CdTe recombination. This degradation resulted in a reduced fill factor, due to the formation of the Cu-depleted blocking contact and the consequent reduction in collection efficiency.

  13. Thermoelectric Micro-Refrigerator Based on Bismuth/Antimony Telluride

    NASA Astrophysics Data System (ADS)

    Dang, Linh Tuan; Dang, Tung Huu; Nguyen, Thao Thi Thu; Nguyen, Thuat Tran; Nguyen, Hue Minh; Nguyen, Tuyen Viet; Nguyen, Hung Quoc

    2017-03-01

    Thermoelectric micro-coolers based on bismuth telluride (Bi2Te3) and antimony telluride (Sb2Te3) are important in many practical applications thanks to their compactness and fluid-free circulation. In this paper, we studied thermoelectric properties of bismuth/antimony telluride (Bi/SbTe) thin films prepared by the thermal co-evaporation method, which yielded among the best thermoelectric quality. Different co-evaporation conditions such as deposition flux ratio of materials and substrate temperature during deposition were investigated to optimize the thermoelectric figure␣of merit of these materials. Micron-size refrigerators were designed and fabricated using standard lithography and etching technique. A three-layer structure was introduced, including a p-type layer, an n-type layer and an aluminum layer. Next to the main cooler, a pair of smaller Bi/SbTe junctions was used as a thermocouple to directly measure electron temperature of the main device. Etching properties of the thermoelectric materials were investigated and optimized to support the fabrication process of the micro-refrigerator. We discuss our results and address possible applications.

  14. Method for surface passivation and protection of cadmium zinc telluride crystals

    DOEpatents

    Mescher, Mark J.; James, Ralph B.; Schlesinger, Tuviah E.; Hermon, Haim

    2000-01-01

    A method for reducing the leakage current in CZT crystals, particularly Cd.sub.1-x Zn.sub.x Te crystals (where x is greater than equal to zero and less than or equal to 0.5), and preferably Cd.sub.0.9 Zn.sub.0.1 Te crystals, thereby enhancing the ability of these crystal to spectrally resolve radiological emissions from a wide variety of radionuclides. Two processes are disclosed. The first method provides for depositing, via reactive sputtering, a silicon nitride hard-coat overlayer which provides significant reduction in surface leakage currents. The second method enhances the passivation by oxidizing the CZT surface with an oxygen plasma prior to silicon nitride deposition without breaking the vacuum state.

  15. Review of methods for preparatin of zinc and cadmium sulfide, selenide and telluride single cyrstals

    NASA Technical Reports Server (NTRS)

    Kucharczyk, M.; Zabludowska, K.

    1986-01-01

    The growth method of (Zn,Cd)S, (Zn,Cd)Se, (Zn,Cd)Te single crystals is reviewed. It is suggested that the method of sublimation-condensation is the most suitable to the conditions and facilities available, and should be employed in the Department of Physics of Bislystok Polytechnic.

  16. Experimental Studies on Mass Transport of Cadmium-Zinc Telluride by Physical Vapor Transport

    NASA Technical Reports Server (NTRS)

    Palosz, W.; Szofran, F. R.; Lehoczky, S. L.

    1995-01-01

    Experimental studies on mass transport of ternary compound, Cd(1-x)Zn(x)Te by physical vapor transport (PVT) for source compositions up to X = 0.21 are presented. The effect of thermochemical (temperatures, vapor composition) and other factors (preparation of the source, crystal growth rate, temperature gradient) on composition and composition profiles of the grown crystals were investigated. A steep decrease in the mass flux with an increase in X(crystal) for X less than 0.1, and a difference in composition between the source and the deposited material have been observed. The composition profiles of the crystals were found to depend on the density and pretreatment of the source, and on the temperature gradient in the source zone. The homogeneity of the crystals improves at low undercoolings and/or when an appropriate excess of metal constituents is present in the vapor phase. The experimental results are in good agreement with our thermochemical model of this system.

  17. Feasibility study of direct-conversion x-ray detection using cadmium zinc telluride films

    NASA Astrophysics Data System (ADS)

    Kang, S.; Jung, B.; Noh, S.; Cho, C.; Yoon, I.; Park, J.

    2012-01-01

    Polycrystalline Cd(Zn)Te films deposited by vacuum thermal evaporation are investigated as a direct-conversion medium for x-ray detection. The use of evaporation techniques allows for the preparation of large-area films with the potential for large-area x-ray imaging with high spatial resolution. Films with compositions of Cd1-xZnxTe (x = 0.15,0.25,0.3) were prepared to a thickness of 20 μm on slide glass substrates with an aluminum or indium tin oxide (ITO) bottom electrode and a silver top electrode, with and without additional charge-blocking layers (CeO2 and parylene dielectric) between the electrode and CdZnTe film to reduce leakage current. Composition and structural analyses of the as-deposited films confirm the development of polycrystalline CdZnTe. Leakage current in the CdZnTe film is approximately ten times lower than for a comparable CdTe film, and the lowest leakage is obtained for a film with composition of Cd0.7Zn0.3Te The use of ITO rather than aluminum as the bottom electrode provides a further improvement in leakage current and improved stability. The Cd0.7Zn0.3Te-based device with ITO electrode and charge-blocking layers achieves the highest total output charge (180.44 pC/cm2 or 1.1 × 109 e-/cm2) and signal-to-noise ratio (6.19 at applied bias of 30 V). The present experiments show that Cd1-xZnxTe in a multilayer structure with charge-blocking layers is feasible as a good radiation conversion layer for flatpanel radiation imaging systems.

  18. Investigations on electrochemical growth and properties of mercury cadmium telluride semiconductor thin films for device fabrication

    NASA Astrophysics Data System (ADS)

    Kumaresan, R.; Moorthy Babu, S.; Ramasamy, P.

    1999-03-01

    Thin films of Hg 1- xCd xTe was deposited on `Ni' substrates by electrodeposition technique from an aqueous solution containing mixture of CdCl 2, HgCl 2 and TeO 2 by potentiostatic technique. The co-deposition conditions of Hg, Cd and Te were optimized by using voltammogram and Pourbaix diagram as a tool. From the same electrolyte, at lower potential Hg rich MCT was formed and at a higher potential Cd rich MCT was formed. The grown films were annealed and the films were analyzed by XRD, SEM, EDAX and the film thickness was also measured. The conductivity type of the film was confirmed by hot or thermoelectric probe method. The thickness of the film was in the order of ˜1 μm and it has a preferential orientation in (1 1 1) direction. Thermal annealing improves the crystalline quality of the as-deposited film. The Cd rich MCT exhibit a cauliflower morphology and the grain size is bigger than the Hg rich MCT film.

  19. Next Generation Semiconductor-Based Radiation Detectors Using Cadmium Magnesium Telluride

    SciTech Connect

    Trivedi, Sudhir B; Kutcher, Susan W; Palsoz, Witold; Berding, Martha; Burger, Arnold

    2014-11-17

    The primary objective of Phase I was to perform extensive studies on the purification, crystal growth and annealing procedures of CdMgTe to gain a clear understanding of the basic material properties to enable production of detector material with performance comparable to that of CdZnTe. Brimrose utilized prior experience in the growth and processing of II-VI crystals and produced high purity material and good quality single crystals of CdMgTe. Processing techniques for these crystals including annealing, mechanical and chemical polishing, surface passivation and electrode fabrication were developed. Techniques to characterize pertinent electronic characteristics were developed and gamma ray detectors were fabricated. Feasibility of the development of comprehensive defect modeling in this new class of material was demonstrated by our partner research institute SRI International, to compliment the experimental work. We successfully produced a CdMgTe detector that showed 662 keV gamma response with energy resolution of 3.4% (FWHM) at room temperature, without any additional signal correction. These results are comparable to existing CdZnTe (CZT) technology using the same detector size and testing conditions. We have successfully demonstrated detection of gamma-radiation from various isotopes/sources, using CdMgTe thus clearly proving the feasibility that CdMgTe is an excellent, low-cost alternative to CdZnTe.

  20. Minimizing Reflectivity by Etching Microstructures in Mercury Cadmium Telluride (HgCdTe)

    DTIC Science & Technology

    2013-02-01

    readout integrated circuit (ROIC) (figure 1) using a p-n junction, which collects the photocharge into pixels using electric fields, and indium bump ...by ICP, a dry etch technique (figure 4). The samples were first mounted to a Si wafer with Apiezon N adhesive and loaded into the plasma etcher...flowing helium (He) gas on the backside of the handle wafer . The kinetic energy of the ionized gases bombards the sample and physically removes

  1. Mercury-cadmium-telluride - Technical significance and microgravity relevance related to crystal growth

    NASA Astrophysics Data System (ADS)

    Walcher, H.; Diehl, R.; Baars, J.

    The technical importance of the mixed-crystal system Hg(1-x)Cd(x)Te (MCT) is related to a growing interest in detector devices for the infrared spectral ranges of the two atmospheric 'windows'. Applications are not restricted to the military sector, but are also related to astronomy, archeology, medicine, construction engineering, fire fighting, and the determination of pollutants in the atmosphere. It is found that MCT is uniquely qualified for the considered applications, because no other material combines, in the same way, all the required characteristics. However, problems arise in connection with the need for pure, homogeneous, single crystals of adequate size, which are free of any defects. The best results in attempts to grow such crystals have been obtained in experiments utilizing the traveling heater method (THM). Remaining difficulties are caused by effects of gravity. It is, therefore, expected that the crystals needed can be produced under conditions of microgravity. Suitable experiments for exploring this possibility are discussed.

  2. Analysis of the traveling heater method for the growth of cadmium telluride

    NASA Astrophysics Data System (ADS)

    Peterson, Jeffrey H.; Fiederle, Michael; Derby, Jeffrey J.

    2016-11-01

    We discuss the development and implementation of a comprehensive mathematical model for the traveling heater method (THM) that is formulated to realistically represent the interactions of heat and species transport, fluid flow, and interfacial dissolution and growth under conditions of local thermodynamic equilibrium and steady-state growth. We examine the complicated interactions among zone geometry, continuum transport, phase change, and fluid flow driven by buoyancy. Of particular interest and importance is the formation of flow structures in the liquid zone of the THM that arise from the same physical mechanism as lee waves in atmospheric flows and demonstrate the same characteristic Brunt-Väisälä scaling. We show that flow stagnation and reversal associated with lee-wave formation are responsible for the accumulation of tellurium and supercooled liquid near the growth interface, even when the lee-wave vortex is not readily apparent in the overall flow structure. The supercooled fluid is posited to result in morphological instability at growth rates far below the limit predicted by the classical criterion by Tiller et al. for constitutional supercooling.

  3. Imaging properties of small-pixel spectroscopic x-ray detectors based on cadmium telluride sensors

    NASA Astrophysics Data System (ADS)

    Koenig, Thomas; Schulze, Julia; Zuber, Marcus; Rink, Kristian; Butzer, Jochen; Hamann, Elias; Cecilia, Angelica; Zwerger, Andreas; Fauler, Alex; Fiederle, Michael; Oelfke, Uwe

    2012-11-01

    Spectroscopic x-ray imaging by means of photon counting detectors has received growing interest during the past years. Critical to the image quality of such devices is their pixel pitch and the sensor material employed. This paper describes the imaging properties of Medipix2 MXR multi-chip assemblies bump bonded to 1 mm thick CdTe sensors. Two systems were investigated with pixel pitches of 110 and 165 μm, which are in the order of the mean free path lengths of the characteristic x-rays produced in their sensors. Peak widths were found to be almost constant across the energy range of 10 to 60 keV, with values of 2.3 and 2.2 keV (FWHM) for the two pixel pitches. The average number of pixels responding to a single incoming photon are about 1.85 and 1.45 at 60 keV, amounting to detective quantum efficiencies of 0.77 and 0.84 at a spatial frequency of zero. Energy selective CT acquisitions are presented, and the two pixel pitches' abilities to discriminate between iodine and gadolinium contrast agents are examined. It is shown that the choice of the pixel pitch translates into a minimum contrast agent concentration for which material discrimination is still possible. We finally investigate saturation effects at high x-ray fluxes and conclude with the finding that higher maximum count rates come at the cost of a reduced energy resolution.

  4. Determination of the mean inner potential of cadmium telluride via electron holography

    NASA Astrophysics Data System (ADS)

    Cassidy, C.; Dhar, A.; Shintake, T.

    2017-04-01

    Mean inner potential is a fundamental material parameter in solid state physics and electron microscopy and has been experimentally measured in CdTe, a technologically important semiconductor. As a first step, the inelastic mean free path for electron scattering in CdTe was determined, using electron energy loss spectroscopy, to enable precise thickness mapping of thin CdTe lamellae. The obtained value was λi(CdTe, 300 kV) = 192 ± 10 nm. This value is relatively large, given the high density of the material, and is discussed in the text. Next, electron diffraction and specimen tilting were employed to identify weakly diffracting lattice orientations, to enable the straightforward measurement of the electron phase shift. Finally, electron holography was utilized to quantitatively map the phase shift experienced by electron waves passing through a CdTe crystal, with several different propagation vectors. Utilization of both thickness and phase data allowed computation of mean inner potential as V0 (CdTe) = 14.0 ± 0.9 V, within the range of previous theoretical estimates.

  5. Surface Structure and Chemistry in the Epitaxial Growth of Cadmium Telluride on Silicon

    DTIC Science & Technology

    2008-04-21

    resulted from this work. (a) Papers published in peer-reviewed journals (N/A for none) C. Fulk , R. Sporken, J. Dumont, D. Zavitz, M. Trenary, B. Gupta...surface”, J. Electron. Mater. 34, 839-845 (2005). C. Fulk , S. Sivananthan, D. Zavitz, R. Singh, M. Trenary, Y. P. Chen, G. Brill, and N. Dhar, “The...journals: A. Evstigneeva, D. H. Zavitz, R. Singh , C. Fulk , G. Badano, S. Sivananthan, R. Sporken, and M. Trenary, “Surface Science Studies of Arsenic

  6. Imaging properties of small-pixel spectroscopic x-ray detectors based on cadmium telluride sensors.

    PubMed

    Koenig, Thomas; Schulze, Julia; Zuber, Marcus; Rink, Kristian; Butzer, Jochen; Hamann, Elias; Cecilia, Angelica; Zwerger, Andreas; Fauler, Alex; Fiederle, Michael; Oelfke, Uwe

    2012-11-07

    Spectroscopic x-ray imaging by means of photon counting detectors has received growing interest during the past years. Critical to the image quality of such devices is their pixel pitch and the sensor material employed. This paper describes the imaging properties of Medipix2 MXR multi-chip assemblies bump bonded to 1 mm thick CdTe sensors. Two systems were investigated with pixel pitches of 110 and 165 μm, which are in the order of the mean free path lengths of the characteristic x-rays produced in their sensors. Peak widths were found to be almost constant across the energy range of 10 to 60 keV, with values of 2.3 and 2.2 keV (FWHM) for the two pixel pitches. The average number of pixels responding to a single incoming photon are about 1.85 and 1.45 at 60 keV, amounting to detective quantum efficiencies of 0.77 and 0.84 at a spatial frequency of zero. Energy selective CT acquisitions are presented, and the two pixel pitches' abilities to discriminate between iodine and gadolinium contrast agents are examined. It is shown that the choice of the pixel pitch translates into a minimum contrast agent concentration for which material discrimination is still possible. We finally investigate saturation effects at high x-ray fluxes and conclude with the finding that higher maximum count rates come at the cost of a reduced energy resolution.

  7. Far Infrared Photoconductivity Studies in Mercury Cadmium-Telluride Superlattices and

    NASA Astrophysics Data System (ADS)

    Boero, Francis Joseph

    The advent of the molecular gas far-infrared (FIR) laser in 1972 has provided a monochromatic source in the heretofore inaccessible spectral region of 70-1500 (mu)m. When this source was integrated with a liquid Helium dewar and superconducting magnet the resulting instrument was ideally suited to magneto-optical studies of low energy electronic structures. The capabilities of the new spectrometer were directed towards newly developed one and two dimensional materials. A FIR laser optically pumped by a CO(,2) laser was constructed to cover the range 100-1000 (mu)m (10-100 cm('-1)). Special attention was given to selection of a minimal set of molecular gasses to cover this range as well as the development of an oversize waveguide system to transmit the energy into the experimental dewar. The development process included the design and optimization of reference bolometry for use at high magnetic fields. A superlattice composed of laser deposited HgTe and CdTe (layer thicknesses 110/200 Angstroms) was studied and found to exhibit a photoconductive resonance at 19 cm('-1) at 1.6 K. The lineshape and resonance strength were magnetic field dependent with the effect vanishing at 2.6 Tesla. The resonance was attributed to an energy level resonant with the bottom of the superlattice conduction band. By correlating S d-H measurements with photoconductive data the resonant level was placed 16 cm('-1) above the chemical potential. Extensive photoconductive measurements in the temperature range 1.7-3.2 K were made on the 1-dimensional organic superconductor (TMTSF)(,2)PF(,6). Photoconductivity variations with temperature, T, and magnetic field, B, were obtained at ambient pressure. The spin-density-wave gap determined optically was found to be 23 cm('-1) inconsistent with a measured thermal gap of 18 cm('-1). Photoconductive lineshapes were consistent with a 1-dimensional density of states. Both lineshape and gap discrepancy could be reconciled with a quasi 2-dimensional band model of K. Yamaji. From this theory, a transverse coupling energy, t(,b), of 208 K was inferred. (Copies available exclusively from Micrographics Department, Doheny Library, USC, Los Angeles, CA 90089.).

  8. Characterization of Cadmium-Zinc Telluride Crystals Grown by 'Contactless' PVT Using Synchrotron White Beam Topography

    NASA Technical Reports Server (NTRS)

    Palosz, W.; Gillies, D.; Grasza, K.; Chung, H.; Raghothamachar, B.; Dudley, M.

    1997-01-01

    Crystals of Cd(1-x)Zn(x)Te grown by Physical Vapor Transport (PVT) using self-seeding 'contactless' techniques were characterized using synchrotron radiation (reflection, transmission, and Laue back-reflection X-ray topography). Crystals of low (x = 0.04) and high (up to x approx. = 0.4) ZnTe content were investigated. Twins and defects such as dislocations, precipitates, and slip bands were identified. Extensive inhomogeneous strains present in some samples were found to be generated by interaction (sticking) with the pedestal and by composition gradients in the crystals. Large (up to about 5 mm) oval strain fields were observed around some Te precipitates. Low angle grain boundaries were found only in higher ZnTe content (x greater than or equal to 0.2) samples.

  9. Properties of RF sputtered cadmium telluride (CdTe) thin films: Influence of deposition pressure

    SciTech Connect

    Kulkarni, R. R.; Pawbake, A. S.; Waykar, R. G.; Rondiya, S. R.; Jadhavar, A. A.; Pandharkar, S. M.; Karpe, S. D.; Diwate, K. D.; Jadkar, S. R.

    2016-04-13

    Influence of deposition pressure on structural, morphology, electrical and optical properties of CdTe thin films deposited at low substrate temperature (100°C) by RF magnetron sputtering was investigated. The formation of CdTe was confirmed by low angle XRD and Raman spectroscopy. The low angle XRD analysis revealed that the CdTe films have zinc blende (cubic) structure with crystallites having preferred orientation in (111) direction. Raman spectra show the longitudinal optical (LO) phonon mode peak ∼ 165.4 cm{sup -1} suggesting high quality CdTe film were obtained over the entire range of deposition pressure studied. Scanning electron microscopy analysis showed that films are smooth, homogenous, and crack-free with no evidence of voids. The EDAX data revealed that CdTe films deposited at low deposition pressure are high-quality stoichiometric. However, for all deposition pressures, films are rich in Cd relative to Te. The UV-Visible spectroscopy analysis show the blue shift in absorption edge with increasing the deposition pressure while the band gap show decreasing trend. The highest electrical conductivity was obtained for the film deposited at deposition pressure 1 Pa which indicates that the optimized deposition pressure for our sputtering unit is 1 Pa. Based on the experimental results, these CdTe films can be useful for the application in the flexible solar cells and other opto-electronic devices.

  10. Prognostic evaluation in obese patients using a dedicated multipinhole cadmium-zinc telluride SPECT camera.

    PubMed

    De Lorenzo, Andrea; Peclat, Thais; Amaral, Ana Carolina; Lima, Ronaldo S L

    2016-02-01

    The purpose of this study is to evaluate the prognostic value of myocardial perfusion SPECT obtained in CZT cameras (CZT-SPECT) with multipinhole collimation in obese patients. CZT-SPECT may be technically challenging in the obese, and its prognostic value remains largely unknown. Patients underwent single-day, rest/stress (supine and prone) imaging. Images were visually inspected and graded as poor, fair or good/excellent. Summed stress and difference scores (SSS and SDS, respectively) were converted into percentages of total perfusion defect and of ischemic defect by division by the maximum possible score. Obesity was defined as a body mass index (BMI) ≥ 30 kg/m(2) and classified as class I (BMI 30-34.9 kg/m(2)), II (BMI 35-39.9 kg/m(2)), or III (BMI ≥ 40 kg/m(2)). Patients were followed-up by telephone interview for the occurrence of all-cause death, myocardial infarction or revascularization. A Cox proportional hazards analysis was used to assess the independent predictors of death. Among 1396 patients, 365 (26.1 %) were obese (mean BMI 33.9 ± 3.6; 17.5 % class I, 3.4 % class II, and 3.4 % class III). Image quality was good/excellent in 94.5 % of the obese patients. The annualized mortality rates were not significantly different among obese and non-obese patients, being <1 % with normal CZT-SPECT, and increased with the degree of scan abnormality in both obese and non-obese patients. Age, the use of pharmacologic stress and an abnormal CZT-SPECT, but not obesity, were independent predictors of death. In obese patients, single-day rest/stress CZT-SPECT with a multipinhole camera provides prognostic discrimination with high image quality.

  11. Non-Uniformities in Thin-Film Cadmium Telluride Solar Cells Using Electroluminescence and Photoluminescence: Preprint

    SciTech Connect

    Zaunbrecher, K.; Johnston, S.; Yan, F.; Sites, J.

    2011-07-01

    It is the purpose of this research to develop specific imaging techniques that have the potential to be fast, in-line tools for quality control in thin-film CdTe solar cells. Electroluminescence (EL) and photoluminescence (PL) are two techniques that are currently under investigation on CdTe small area devices made at Colorado State University. It is our hope to significantly advance the understanding of EL and PL measurements as applied to CdTe. Qualitative analysis of defects and non-uniformities is underway on CdTe using EL, PL, and other imaging techniques.

  12. Development of Materials and Structures for p-type Contacts in Cadmium Telluride Solar Cells

    NASA Astrophysics Data System (ADS)

    Ferizovic, Dino

    Solar cells based on CdTe absorbers are attractive due to the optimal direct band gap energy and large absorption coefficient of CdTe, however, their performance and commercialization is hindered by the lack of reliable p-type contacts. CdTe has a low carrier concentration and a large electron affinity, which results in a requirement of non-realistic work functions for metals to be used as back contacts in the solar cell. Even noble metals such as Ag present a significantly large potential barrier for holes, thereby reducing the hole current through the semiconductor/metal interface. Several attempts to resolve this challenge have been tried, however, many drawbacks have been encountered. Two particular systems, namely Cu2Te thin films and CdTe/ZnTe strained-layer superlattices, are investigated for their potential use as ohmic contacts in CdTe solar cells. A detailed analysis of the optical, electrical, and structural properties of Cu2Te thin films deposited by magnetron sputtering is presented. It is shown that these films have an indirect band gap and highly degenerate semiconductor behavior. The large p-type carrier concentration of Cu2Te films is highly desirable for the application of Cu2Te as a p-type contact to CdTe. In-depth studies of optical transitions and miniband transport in strained-layer CdTe/ZnTe superlattices are presented as well. The band offsets between CdTe and ZnTe were determined by comparison of measured and calculated optical transitions. Superlattice structures that offer best contact performance have been identified by use of tunneling probability simulations. Characterization of CdTe solar cells with above mentioned contacts indicated that contacts based on CdTe/ZnTe superlattices are a viable Cu free option for stable and reliable p-type contacts in CdTe solar cell. The contact performance of Cu2Te thin films was comparable to that of CdTe/ZnTe superlattices and both demonstrated an advantage over contacts based on ZnTe:N thin films which were used a standard.

  13. Gold diffusion in mercury cadmium telluride grown by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Selamet, Yusuf; Singh, Rasdip; Zhao, Jun; Zhou, Yong D.; Sivananthan, Sivalingam; Dhar, Nibir K.

    2003-12-01

    The growth and characterization of Au-doped HgCdTe layers on (211)B CdTe/Si substrates grown by molecular beam epitaxy reported. The electrical properties of these layers studied for diffusion are presented. For ex-situ experiments, thin Au layers were deposited by evaporation and annealed at various temperatures and times to investigate the p-type doping properties and diffusion of Au in HgCdTe. The atomic distribution of the diffused Au was determined by secondary ion mass spectroscopy. We found clear evidence for p-type doping of HgCdTe:Au by in-situ and ex-situ methods. For in-situ doped layers, we found that, the Au cell temperature needs to be around 900°C to get p-type behavior. The diffusion coefficient of Au in HgCdTe was calculated by fitting SIMS profiles after annealing. Both complementary error functions and gaussian fittings were used, and were in full agreement. Diffusion coefficient as low as 8x10-14cm2/s observed for a sample annealed at 250°C and slow component of a diffusion coefficient as low as 2x10-15 cm2/s observed for a sample annealed at 300°C. Our preliminary results indicate no appreciable diffusion of Au in HgCdTe under the conditions used in these studies. Further work is in progress to confirm these results and to quantify our SIMS profiles.

  14. Electrical and galvanomagnetic properties of cadmium telluride films synthesized under highly nonequilibrium conditions

    SciTech Connect

    Belyaev, A. P. Rubets, V. P.; Antipov, V. V.; Grishin, V. V.

    2008-11-15

    The results of experimental studies of electrical and galvanomagnetic properties of CdTe films synthesized under highly nonequilibrium conditions via vapor condensation on a substrate cooled with liquid nitrogen are reported. The temperature dependences of dark conductivity, current-voltage characteristics with and without illumination, temperature dependences of the Hall coefficient R{sub H} and effective Hall mobility {mu}{sub H} in the planar geometry, and dark current-voltage characteristics in the sandwich geometry are reported. Anisotropy of conductivity is revealed. It is shown that the electrical and galvanomagnetic properties of the films are consistently described by a percolation model of charge transport, according to which, at high temperatures, the charge transport takes place over the percolation level of the valence band, and at low temperatures, over the percolation level of the impurity band.

  15. Analysis of advanced vapor source for cadmium telluride solar cell manufacturing

    NASA Astrophysics Data System (ADS)

    Khetani, Tejas Harshadkumar

    A thin film CdS/CdTe solar cell manufacturing line has been developed in the Materials Engineering Laboratory at Colorado State University. The original design incorporated infrared lamps for heating the vapor source. This system has been redesigned to improve the energy efficiency of the system, allow co-sublimation and allow longer run time before the sources have to be replenished. The advanced vapor source incorporates conduction heating with heating elements embedded in graphite. The advanced vapor source was modeled by computational fluid dynamics (CFD). From these models, the required maximum operating temperature of the element was determined to be 720 C for the processing of CdS/CdTe solar cells. Nichrome and Kanthal A1 were primarily selected for this application at temperature of 720 °C in vacuum with oxygen partial pressure. Research on oxidation effects and life due to oxidation as well as creep deformation was done, and Nichrome was found more suitable for this application. A study of the life of the Nichrome heating elements in this application was conducted and the estimate of life is approximately 1900 years for repeated on-off application. This is many orders of magnitude higher than the life of infrared heat lamps. Ceramic cement based on aluminum oxide (Resbond 920) is used for bonding the elements to the graphite. Thermodynamic calculations showed that this cement is inert to the heating element. An earlier design of the advanced source encountered failure of the element. The failed element was studies by scanning electron microscopy and the failure was attributed to loss of adhesion between the graphite and the ceramic element. The design has been modified and the advanced vapor source is currently in operation.

  16. Surface oxidation of polycrystalline cadmium telluride thin films for Schottky barrier junction solar cells

    NASA Astrophysics Data System (ADS)

    Yi, X.; Liou, J. J.

    1995-06-01

    Polycrystalline CdTe thin films grown on graphite or tungsten-coated graphite substrates by chemical vapor deposition (CVD) were exposed to the air at room temperature in a natural atmosphere of about 60% air humidity for 6 months. X-ray photoemission spectroscopy (XPS) and Auger electron spectroscopy (AES) of the films indicate that a tellurium dioxide (TeO 2) overlayer has formed from this process. The effects of such an overlayer on the electrical property of polycrystalline CdTe-based Schottky barrier junction solar cells have also been discussed for the first time. It is shown that a solar cell formed on a CdTe film with TeO 2 overlayer has considerably higher open-circuit voltage and fill factor than that formed on a CdTe film without TeO 2 overlayer. Our study further indicates that using a polycrystalline CdTe film which is thermally oxidized at above room temperature (100-400°C) does not provide any improvement on the solar cell efficiency.

  17. Properties of RF sputtered cadmium telluride (CdTe) thin films: Influence of deposition pressure

    NASA Astrophysics Data System (ADS)

    Kulkarni, R. R.; Pawbake, A. S.; Waykar, R. G.; Rondiya, S. R.; Jadhavar, A. A.; Pandharkar, S. M.; Karpe, S. D.; Diwate, K. D.; Jadkar, S. R.

    2016-04-01

    Influence of deposition pressure on structural, morphology, electrical and optical properties of CdTe thin films deposited at low substrate temperature (100°C) by RF magnetron sputtering was investigated. The formation of CdTe was confirmed by low angle XRD and Raman spectroscopy. The low angle XRD analysis revealed that the CdTe films have zinc blende (cubic) structure with crystallites having preferred orientation in (111) direction. Raman spectra show the longitudinal optical (LO) phonon mode peak ˜ 165.4 cm-1 suggesting high quality CdTe film were obtained over the entire range of deposition pressure studied. Scanning electron microscopy analysis showed that films are smooth, homogenous, and crack-free with no evidence of voids. The EDAX data revealed that CdTe films deposited at low deposition pressure are high-quality stoichiometric. However, for all deposition pressures, films are rich in Cd relative to Te. The UV-Visible spectroscopy analysis show the blue shift in absorption edge with increasing the deposition pressure while the band gap show decreasing trend. The highest electrical conductivity was obtained for the film deposited at deposition pressure 1 Pa which indicates that the optimized deposition pressure for our sputtering unit is 1 Pa. Based on the experimental results, these CdTe films can be useful for the application in the flexible solar cells and other opto-electronic devices.

  18. Vapor transport crystal growth of mercury-cadmium-telluride in microgravity

    NASA Technical Reports Server (NTRS)

    Wiedemeier, Heribert

    1994-01-01

    Two epitaxial growth experiments of Hg(1-x)Cd(x)Te layers on (100) CdTe substrates in closed ampoules using HgI2 as a transport agent have been performed during the USML-1 mission. The characterization results to date demonstrate a considerable improvement of the space-grown epitaxial layers relative to ground-control specimens in terms of morphology, compositional uniformity, and structural micro homogeneity. These results show the effects of microgravity and fluid dynamic disturbances on-ground on the deposition and growth processes. The continued analysis of this technologically important system is designed to further elucidate the observed crystallographic improvements and their relation to mass flow.

  19. Thermal analysis of Bridgman-Stockbarger growth. [mercury cadmium telluride single crystals

    NASA Technical Reports Server (NTRS)

    Knopf, F. W.

    1979-01-01

    A thermal analysis of a cylindrical HgCdTe sample in a Bridgman-Stockbarger crystal growth configuration was conducted with emphasis on the thermal profile, interface shape and position, and the thermal gradients at the liquid-solid interface. Alloys of HgTe and CdTe with compositions approximating 20 percent CdTe, 80 percent HgTe were used. This composition results in a bandgap suited for the detection of 10.6 micron CO2 radiation. The sensitivity of the sample thermal characteristics to important growth parameters, such as thermal diffusivities, thermal conductivities, furnace temperature profile, ampoule dimensions, and growth velocity was assessed. Numerical techniques and associated computational models necessary to analyze the heat transfer process within the sample and the Bridgman-Stockbarger boundary conditions were developed. This thermal analysis mode was programmed in FORTRAN V, and is currently operational on the MSFC Univac 1100 system.

  20. Size, weight, and power reduction of mercury cadmium telluride infrared detection modules

    NASA Astrophysics Data System (ADS)

    Breiter, Rainer; Ihle, Tobias; Wendler, Joachim C.; Lutz, Holger; Rutzinger, Stefan; Schallenberg, Timo; Hofmann, Karl C.; Ziegler, Johann

    2011-06-01

    Application requirements driving present IR technology development activities are improved capability to detect and identify a threat as well as the need to reduce size weight and power consumption (SWaP) of thermal sights. In addition to the development of 3rd Gen IR modules providing dual-band or dual-color capability, AIM is focused on IR FPAs with reduced pitch and high operating temperature for SWaP reduction. State-of-the-art MCT technology allows AIM the production of mid-wave infrared (MWIR) detectors operating at temperatures exceeding 120 K without any need to sacrifice the 5-μm cut-off wavelength. These FPAs allow manufacturing of low cost IR modules with minimum size, weight, and power for state-of-the-art high performance IR systems. AIM has realized full TV format MCT 640×512 mid-wave and long-wave IR detection modules with a 15-μm pitch to meet the requirements of critical military applications like thermal weapon sights or thermal imagers in unmanned aerial vehicles applications. In typical configurations like an F/4.6 cold shield for the 640×512 MWIR module an noise equivalent temperature difference (NETD) <25 mK @ 5 ms integration time is achieved, while the long-wavelength infrared (LWIR) modules achieve an NETD <38 mK @ F/2 and 180 μs integration time. For the LWIR modules, FPAs with a cut-off up to 10 μm have been realized. The modules are available either with different integral rotary cooler configurations for portable applications that require minimum cooling power or a new split linear cooler providing long lifetime with a mean time to failure (MTTF) > 20000, e.g., for warning sensors in 24/7 operation. The modules are available with optional image processing electronics providing nonuniformity correction and further image processing for a complete IR imaging solution. The latest results and performance of those modules and their applications are presented.

  1. Mercury cadmium telluride short- and medium-wavelength infrared staring focal plane arrays

    NASA Technical Reports Server (NTRS)

    Vural, Kadri

    1987-01-01

    Short and medium IR wavelength 64 x 64 hybrid focal plane arrays (FPAs) have been developed using sapphire-grown HgCdTe. The short wavelength arrays were developed for a prototype airborne imaging spectrometer, while those of medium wavelength are suitable for tactical missile seekers and strategic surveillance systems. Attention is presently given to results obtained for these FPAs' current-voltage characteristics, as well as for their characterization at different temperatures. The detector arrays were also mated to a multiplexer and characterized under different operating conditions. The unit cell size used is 52 x 52 microns.

  2. Experiment 2: Vapor Transport Crystal Growth of Mercury Cadmium Telluride in Microgravity- USML-2

    NASA Technical Reports Server (NTRS)

    Wiedemeier, H.; Ge, Y. R.; Hutchins, M. A.

    1998-01-01

    The new epitaxial growth experiments of Hg(l-x)Cd(x)Te on (100) CdTe substrates by chemical vapor transport (CVT), using HgI2 as a transport agent, were performed in the transient growth regime of this ternary, heteroepitaxial system at normal and reduced gravity during the USML-2 flight. The surface and interface morphology, the compositional and structural uniformity, and carrier mobility of the epitaxial layer and islands grown in microgravity are measurably improved relative to ground specimens. These observations demonstrate the effects of convective flow on the transport, deposition, and growth processes of this solid-vapor system even in the transient growth regime. The properties of the Hg(l-x)Cd(x)Te layer grown in a microgravity environment compare quite favorably to those of layers obtained by other techniques.

  3. Space processing of electronic materials. [determining ther themal conductivity of mercury cadmium tellurides and furnace design

    NASA Technical Reports Server (NTRS)

    Workman, G. L.; Holland, L. R.

    1981-01-01

    The relative values of thermal conductivity of solid and liquid HgCdTe are critically important in the design configuration of the furnaces used for Bridgman crystal growth. The thermal diffusivity of the material is closely linked to the conductivity by the defining relation D = k/rho c, where D is the diffusivity, K is the thermal conductivity, rho is the density, and c is the specific heat. The use of transient and periodic heating approaches to measure the diffusivity are explored. A system for securing and extracting heat from silica or glass tubes under high C vacuum conditions is described.

  4. Review of methods for preparation of zinc and cadmium sulfide, selenide and telluride single cyrstals

    SciTech Connect

    Kucharczyk, M.; Zabludowska, K.

    1986-05-01

    The growth method of (Zn,Cd)S, (Zn,Cd)Se, (Zn,Cd)Te single crystals is reviewed. It is suggested that the method of sublimation-condensation is the most suitable to the conditions and facilities available, and should be employed in the Department of Physics of Bislystok Polytechnic.

  5. Improved Techniques for the Growth of High Quality Cadmium Telluride Crystals.

    DTIC Science & Technology

    1985-06-01

    Bridgman method. Growth parameters were systematically varied in order to determine the influence of seed orientation, thermal environment, and growth rate...ILLUSTRATIONS 1. Influence of Melt Vibrations on CdTe Crystals 2. Vertical Bridgman Growth Furnace 3. Vacuum-formed Quartz Growth Ampoule 4. Crystal...A. "Interface Studies during Vertical Bridgman CdTe Crystal Growth" by R. K. Route, M. Wolf and R. S. Feigelson B. "Etch Pit Studies in CdTe Crystals

  6. Processing, Fabrication and Characterization of Advanced Target Sensors Using Mercury Cadmium Telluride (MCT)

    DTIC Science & Technology

    2010-09-01

    doped with Au, Hg, Cd, Be, or Ga); or (3) photoemissive such as metal silicides and negative electron affinity materials. Photoconductive and...generate the plasma; the chamber pressure is normally controlled by varying the automatic pressure control valve and a high value indicates high pressure ...such a way that the electrons dominate the conductivity due to their high mobility, and holes play a secondary role. The operation of the photodiode

  7. Femtosecond optical characterization and applications in cadmium(manganese) telluride diluted magnetic semiconductors

    NASA Astrophysics Data System (ADS)

    Wang, Daozhi

    This thesis is devoted to the optical characterization of Cd(Mn)Te single crystals. I present the studies of free-carrier dynamics and generation and detection of coherent acoustic phonons (CAPS) using time-resolved femtosecond pump-probe spectroscopy. The giant Faraday effect and ultrafast responsivity of Cd(Mn)Te to sub-picosecond electromagnetic transients are also demonstrated and discussed in detail. The first, few-picosecond-long electronic process after the initial optical excitation exhibits very distinct characteristic dependence on the excitation condition, and in case of Cd(Mn)Te, it has been attributed to the collective effects of band filling, band renormalization, and two-photon absorption. A closed-form, analytic expression for the differential reflectivity induced by the CAPs is derived based on the propagating-strain-pulse model and it accounts very well for our experimental observations. The accurate values of the Mn concentration and longitudinal sound velocity nu s in Cd(Mn)Te were obtained by fitting the data of the refractive index dependence on the probe wavelength to the Schubert model. In Cd 0.91Mn0.09Te, nus was found to be 3.6x103 m/s. Our comparison studies from the one-color and two-color experiments reveal that the intrinsic phonon lifetime in Cd(Mn)Te was at least on the order of nanoseconds, and the observed exponential damping of the CAP oscillations was due to the finite absorption depth of the probe light. Optically-induced electronic stress has been demonstrated to be the main generation mechanism of CAPs. We also present the giant Faraday effect in the Cd(Mn)Te and the spectra of the Verdet constant, which is mainly due to the exchange interaction between the Mn ions and band electrons. The spectral characteristics of the Verdet constant in Cd(Mn)Te exhibit very unique features compared to that in pure semiconductors. In our time-resolved sampling experiments at the room temperature, the response of the Cd(Mn)Te, particularly with low Mn concentrations, to the sub-picosecond electromagnetic pulses has been demonstrated for the first time and studied in detail. The physical origin of the ultrafast responsivity is shown to be the electro-optic (Pockels) effect, simultaneously excluding the magneto-optical (Faraday) effect due to the Mn-ion spin dynamics. The discrepancy between the absence of the low-frequency Pockels effect and the ultrafast sampling results, suggests that in Cd(Mn)Te crystals at low frequencies, the electric field component of the external electromagnetic transients is screened by the free carriers (holes). At very high (THz) frequencies, tested by our sampling experiment, Mn spins are too slow to respond and we observe the very large Pockels effect in Cd(Mn)Te crystals.

  8. A Experimental Study of Indium-Doped Mercury Cadmium Telluride Grown by Molecular Beam Epitaxy

    NASA Astrophysics Data System (ADS)

    Sou, Iam-Keong

    Indium doping of HgCdTe has been successfully carried out during growth by MBE. According to Hall Effect measurements, indium acts as n-type dopant for HgCdTe as expected. The absence of carrier freeze-out indicates that the donor energy level of indium is probably merged with the conduction band. By the combination of the Hall effect and SIMS the incorporation mechanisms of indium are found to be different between the (111)B and (100) growth orientations. In the (111)B case, part of the indium is incorporated in the metal sites and the rest of its precipitates in the form of In_2Te _3. In the (100) case, most of the indium atoms are believed to be incorporated interstitially in the lattice, and the other indium might occupy the metal sites (this is true at least for indium atomic concentration less than 10^{17}cm ^{-3}). This study indicates that the diffusion of indium is also dependent upon growth orientation. Two different diffusion components were observed in both the (111)B and (100) epilayers, but their characteristics are distinguishable. In the (111)B materials, the slow component is believed to be contributed by the In_2Te _3 neutral complexes. The fast component diffuses along the high-diffusivity paths via dislocation and/or grain boundaries. In the (100) materials, the results seem to imply that for heavily doped region (~ 10^{19}cm ^{-3}) part of the indium content is incorporated interstitially and the rest of it forms neutral complexes. During diffusion annealing, these interstitial indium ions gradually move to the metal sites via interstitialcy mechanism. The fast component is related to the diffusion of In_2Te_3 neutral complexes. The diffusion mechanism of the slow component has not yet been established. Indium doping during MBE growth has been used to fabricate HgCdTe:InCdTe-HgCdTe:In single barrier structures. Negative differential resistance was observed in these structures at low temperature. The valence band offset Delta E_{v} in the HgTe -CdTe heterojunction has been determined from the analysis of I-V characteristics to be 390 +/- 75 meV. Several n-isotype Hg_{1-x }Cd_{x}Te:In - Hg_{1-y}Cd_ {y}Te:In junctions were also fabricated to study the transport properties of electrons through the expected conduction-band discontinuity near the interface.

  9. The semiconductor/electrolyte interface: A re-examination of n-type Cadmium Telluride electrodes

    NASA Astrophysics Data System (ADS)

    Lemasson, Philippe; Triboulet, Robert

    1988-12-01

    The behavior of the n-CdTe electrode is re-examined for materials grown by the travelling heater method using Cd as a solvent. Except at pH 14, results appear to differ from those found with classical CdTe. Generally a large density of interface states exists in the potential range from -0.4 to -0.9 V, which leads to a Fermi level pinning process. The influence of redox species on this behavior is checked at pH 0 using oxygen and {Fe 2+}/{Fe 3+} In the first case, a complex mechanism leads to a large density of interface states whereas in the second, the redox couple acts as a stabilizer for the electrode surface. From the point of view of material properties, photoelectrochemical measurements lead to conclude that these CdTe correspond to the best quality CdTe grown by more classical methods.

  10. Study of copper-free back contacts to thin film cadmium telluride solar cells

    NASA Astrophysics Data System (ADS)

    Viswanathan, Vijay

    The goals of this project are to study Cu free back contact alternatives for CdS/CdTe thin film solar cells, and to research dry etching for CdTe surface preparation before contact application. In addition, an attempt has been made to evaluate the stability of some of the contacts researched. The contacts studied in this work include ZnTe/Cu2Te, Sb2Te 3, and Ni-P alloys. The ZnTe/Cu2Te contact system is studied as basically an extension of the earlier work done on Cu2Te at USF. RF sputtering from a compound target of ZnTe and Cu2Te respectively deposits these layers on etched CdTe surface. The effect of Cu2Te thickness and deposition temperature on contact and cell performance will be studied with the ZnTe depositions conditions kept constant. C-V measurements to study the effect of contact deposition conditions on CdTe doping will also be performed. These contacts will then be stressed to high temperatures (70--100°C) and their stability with stress time is analyzed. Sb2Te3 will be deposited on glass using RF sputtering, to study film properties with deposition temperature. The Sb2Te 3 contact performance will also be studied as a function of the Sb 2Te3 deposition temperature and thickness. The suitability of Ni-P alloys for back contacts to CdTe solar cells was studied by forming a colloidal mixture of Ni2P in graphite paste. The Ni-P contacts, painted on Br-methanol etched CdTe surface, will be studied as a function of Ni-P concentration (in the graphite paste), annealing temperature and time. Some of these cells will undergo temperature stress testing to determine contact behavior with time. Dry etching of CdTe will be studied as an alternative for wet etching processes currently used for CdTe solar cells. The CdTe surface is isotropically etched in a barrel reactor in N2, Ar or Ar:O 2 ambient. The effect of etching ambient, pressure, plasma power and etch time on contact performance will be studied.

  11. Polycrystalline thin-film cadmium telluride solar cells fabricated by electrodeposition. Annual technical report

    SciTech Connect

    Trefny, J.U.; Mao, D.

    1998-01-01

    During the past year, Colorado School of Mines (CSM) researchers performed systematic studies of the growth and properties of electrodeposition CdS and back-contact formation using Cu-doped ZnTe, with an emphasis on low Cu concentrations. CSM also started to explore the stability of its ZnTe-Cu contacted CdTe solar cells. Researchers investigated the electrodeposition of CdS and its application in fabricating CdTe/CdS solar cells. The experimental conditions they explored in this study were pH from 2.0 to 3.0; temperatures of 80 and 90 C; CdCl{sub 2} concentration of 0.2 M; deposition potential from {minus}550 to {minus}600 mV vs. Ag/AgCl electrode; [Na{sub 2}S{sub 2}O{sub 4}] concentration between 0.005 and 0.05 M. The deposition rate increases with increase of the thiosulfate concentration and decrease of solution pH. Researchers also extended their previous research of ZnTe:Cu films by investigating films doped with low Cu concentrations (< 5 at. %). The low Cu concentration enabled them to increase the ZnTe:Cu post-annealing temperature without causing excessive Cu diffusion into CdTe or formation of secondary phases. The effects of Cu doping concentration and post-deposition annealing temperature on the structural, compositional, and electrical properties of ZnTe were studied systematically using X-ray diffraction, atomic force microscopy, electron microprobe, Hall effect, and conductivity measurements.

  12. Thin film cadmium telluride charged particle sensors for large area neutron detectors

    SciTech Connect

    Murphy, J. W.; Smith, L.; Calkins, J.; Mejia, I.; Cantley, K. D.; Chapman, R. A.; Quevedo-Lopez, M.; Gnade, B.; Kunnen, G. R.; Allee, D. R.; Sastré-Hernández, J.; Contreras-Puente, G.; Mendoza-Pérez, R.

    2014-09-15

    Thin film semiconductor neutron detectors are an attractive candidate to replace {sup 3}He neutron detectors, due to the possibility of low cost manufacturing and the potential for large areas. Polycrystalline CdTe is found to be an excellent material for thin film charged particle detectors—an integral component of a thin film neutron detector. The devices presented here are characterized in terms of their response to alpha and gamma radiation. Individual alpha particles are detected with an intrinsic efficiency of >80%, while the devices are largely insensitive to gamma rays, which is desirable so that the detector does not give false positive counts from gamma rays. The capacitance-voltage behavior of the devices is studied and correlated to the response due to alpha radiation. When coupled with a boron-based neutron converting material, the CdTe detectors are capable of detecting thermal neutrons.

  13. Nuclear microprobe studies of the electronic transport properties of cadmium zinc telluride (CZT) radiation detectors

    NASA Astrophysics Data System (ADS)

    Vizkelethy, Gyorgy; Doyle, Barney L.; Walsh, David S.; James, Ralph B.

    2000-11-01

    Ion Beam Induced Charge Collection (IBICC) is a proven albeit relatively new method to measure the electronic transport properties of room temperature radiation detectors. Using an ion microbeam, the charge collection efficiency of CZT detectors can be mapped with submicron resolution and maps of the electron mobility and lifetime can be calculated. The nuclear microprobe can be used not only for characterizing detectors but also with the use of Time Resolved IBICC (TRIBICC) and lateral IBICC/TRIBICC we can deduce information about the electron and hole mobility and lifetime profiles, and about the variation of electric field along the detectors' axes. The Sandia Nuclear Microprobe has been and is being used routinely to characterize CZT detectors and measure their electronic transport properties. In this paper we will present the results of these measurements for different detectors. Furthermore the damage effects caused by the probing beam will be discussed and a simple model will be presented to explain the characteristic charge collection efficiency pattern observed after high dose irradiation.

  14. Modeling effects of solute concentration in Bridgman growth of cadmium zinc telluride

    NASA Astrophysics Data System (ADS)

    Stelian, Carmen; Duffar, Thierry

    2016-07-01

    Numerical modeling is used to investigate the effect of solute concentration on the melt convection and interface shape in Bridgman growth of Cd1-x Znx Te (CZT). The numerical analysis is compared to experimental growth in cylindrical ampoules having a conical tip performed by Komar et al. (2001) [15]. In these experiments, the solidification process occurs at slow growth rate (V = 2 ṡ10-7 m / s) in a thermal field characterized by a vertical gradient GT = 20 K / cm at the growth interface. The computations performed by accounting the solutal effect show a progressive damping of the melt convection due to the depleted Zn at the growth interface. The computed shape of the crystallization front is in agreement with the experimental measurement showing a convex-concave shape for the growth through the conical part of the ampoule and a concave shape of the interface in the cylindrical region. The distribution of Zn is nearly uniform over the crystal length except for the end part of the ingots. The anomalous zinc segregation observed in some experiments is explained by introducing the hypothesis of incomplete charge mixing during the homogenization time which precedes the growth process. When the crystallization is started in ampoules having a very sharp conical tip, the heavy CdTe is accumulated at the bottom part of the melt, giving rise to anomalous segregation patterns, featuring very low zinc concentration in the ingots during the first stage of the solidification.

  15. Cadmium and renal cancer

    SciTech Connect

    Il'yasova, Dora; Schwartz, Gary G. . E-mail: gschwart@wfubmc.edu

    2005-09-01

    Background: Rates of renal cancer have increased steadily during the past two decades, and these increases are not explicable solely by advances in imaging modalities. Cadmium, a widespread environmental pollutant, is a carcinogen that accumulates in the kidney cortex and is a cause of end-stage renal disease. Several observations suggest that cadmium may be a cause of renal cancer. Methods: We performed a systematic review of the literature on cadmium and renal cancer using MEDLINE for the years 1966-2003. We reviewed seven epidemiological and eleven clinical studies. Results: Despite different methodologies, three large epidemiologic studies indicate that occupational exposure to cadmium is associated with increased risk renal cancer, with odds ratios varying from 1.2 to 5.0. Six of seven studies that compared the cadmium content of kidneys from patients with kidney cancer to that of patients without kidney cancer found lower concentrations of cadmium in renal cancer tissues. Conclusions: Exposure to cadmium appears to be associated with renal cancer, although this conclusion is tempered by the inability of studies to assess cumulative cadmium exposure from all sources including smoking and diet. The paradoxical findings of lower cadmium content in kidney tissues from patients with renal cancer may be caused by dilution of cadmium in rapidly dividing cells. This and other methodological problems limit the interpretation of studies of cadmium in clinical samples. Whether cadmium is a cause of renal cancer may be answered more definitively by future studies that employ biomarkers of cadmium exposure, such as cadmium levels in blood and urine.

  16. Solvothermal synthesis and study of nonlinear optical properties of nanocrystalline thallium doped bismuth telluride

    SciTech Connect

    Molli, Muralikrishna; Parola, Sowmendran; Avinash Chunduri, L.A.; Aditha, Saikiran; Sai Muthukumar, V; Mimani Rattan, Tanu; Kamisetti, Venkataramaniah

    2012-05-15

    Nanocrystalline Bismuth telluride and thallium (4 mol %) doped Bismuth telluride were synthesized through hydrothermal method. The as-prepared products were characterized using Powder X-ray Diffraction, High Resolution Transmission Electron Microscopy, Energy Dispersive X-Ray Spectroscopy, UV-Visible spectroscopy and Fourier Transform Infrared Spectroscopy. Powder XRD results revealed the crystalline nature of the obtained phases. HRTEM showed the particle-like morphology of the products. The decrease in the absorption coefficient due to thallium doping was observed in FTIR spectra. The intensity dependent nonlinear optical properties of nanocrystalline bismuth telluride and thallium doped bismuth telluride were studied using the Z-scan technique in open-aperture configuration. Bismuth telluride doped with thallium showed enhanced nonlinear optical response compared to pristine bismuth telluride and hence could be used as a potential candidate for optical power limiting applications. - Graphical Abstract: Nonlinear transmission (Z-scan) curves of nanocrystalline bismuth telluride ({Delta}) and thallium doped bismuth telluride ({open_square}). Thallium doped bismuth telluride showed enhanced nonlinear absorption compared to bismuth telluride. Inset: TEM micrograph of bismuth telluride nanocrystallites. Highlights: Black-Right-Pointing-Pointer Synthesis of Nanocrystalline Bi{sub 2}Te{sub 3} and Thallium doped Bi{sub 2}Te{sub 3} through solvothermal method. Black-Right-Pointing-Pointer Reduced absorption coefficient due to thallium doping found from IR spectroscopy. Black-Right-Pointing-Pointer Open-aperture Z-scan technique for nonlinear optical studies. Black-Right-Pointing-Pointer Two photon absorption based model for theoretical fitting of Z-scan data. Black-Right-Pointing-Pointer Enhanced nonlinear absorption in Thallium doped Bi{sub 2}Te{sub 3} - potential candidate for optical power limiting applications.

  17. Thin-Film Photovoltaic Device Fabrication

    NASA Technical Reports Server (NTRS)

    Scofield, John H.

    2003-01-01

    This project will primarily involve the fabrication and characterization of thin films and devices for photovoltaic applications. The materials involved include Il-VI materials such as zinc oxide, cadmium sulfide, and doped analogs. The equipment ot be used will be sputtering and physical evaporations. The types of characterization includes electrical, XRD, SEM and CV and related measurements to establish the efficiency of the devices. The faculty fellow will be involved in a research team composed of NASA and University researchers as well as students and other junior researchers.

  18. Thin-Film Photovoltaic Device Fabrication

    NASA Technical Reports Server (NTRS)

    Scofield, John H.

    2003-01-01

    This project will primarily involve the fabrication and characterization of thin films and devices for photovoltaic applications. The materials involved include Il-VI materials such as zinc oxide, cadmium sulfide, and doped analogs. The equipment ot be used will be sputtering and physical evaporations. The types of characterization includes electrical, XRD, SEM and CV and related measurements to establish the efficiency of the devices. The faculty fellow will be involved in a research team composed of NASA and University researchers as well as students and other junior researchers.

  19. Single inorganic-organic hybrid photovoltaic nanorod

    NASA Astrophysics Data System (ADS)

    Yoo, Sang-Hoon; Liu, Lichun; Ku, Tea-Woong; Hong, Soonchang; Whang, Dongmok; Park, Sungho

    2013-09-01

    We demonstrate that single photovoltaic (PV) nanorods can be readily fabricated by electrochemical processing in solution-phase under ambient conditions. A porous Au nanorod electrode in the core of the PV nanorod was central to both its structural formation and superior performance. We examined an intrinsically conducting polymer (polypyrrole) and an inorganic semiconductor (cadmium selenide) as precursor materials. Through an extremely simple and cost-effective fashioning process (solution-phase, room temperature), unadorned PV nanorods with up to 1.1% power conversion efficiency were obtained.

  20. Analysis of energy production with different photovoltaic technologies in the Colombian geography

    NASA Astrophysics Data System (ADS)

    Muñoz, Y.; Zafra, D.; Acevedo, V.; Ospino, A.

    2014-06-01

    This research has analyzed the photovoltaic technologies, Polycrystalline silicon, Monocrystalline Silicon, GIS, Cadmium Tellurium and Amorphous Silicon; in eight cities of the Colombian territory, in order to obtain a clear idea of what is the most appropriate for each city or region studied. PVsyst simulation software has been used to study in detail each photovoltaic technology, for an installed capacity of 100kW knowing the specific data of losses by temperature, mismatch, efficiency, wiring, angle inclination of the arrangement, among others

  1. Analysis and optimization of thin film photovoltaic materials and device fabrication by real time spectroscopic ellipsometry

    NASA Astrophysics Data System (ADS)

    Li, Jian; Stoke, Jason A.; Podraza, Nikolas J.; Sainju, Deepak; Parikh, Anuja; Cao, Xinmin; Khatri, Himal; Barreau, Nicolas; Marsillac, Sylvain; Deng, Xunming; Collins, Robert W.

    2007-09-01

    Methods of spectroscopic ellipsometry (SE) have been applied to investigate the growth and properties of the material components used in the three major thin film photovoltaics technologies: (1) hydrogenated silicon (Si:H); (2) cadmium telluride (CdTe); and (3) copper indium-gallium diselenide (CuIn 1-xGa xSe2 or CIGS). In Si:H technology, real time SE (RTSE) has been applied to establish deposition phase diagrams that describe very high frequency (vhf) plasmaenhanced chemical vapor deposition (PECVD) processes for hydrogenated silicon (Si:H) and silicon-germanium alloy (Si 1-xGe x:H) thin films. This study has reaffirmed that the highest efficiencies for a-Si:H and a-Si 1-xGe x:H component solar cells of multijunction devices are obtained when the i-layers are prepared under maximal H II dilution conditions. In CdTe technology, the magnetron sputter deposition of polycrystalline CdTe, CdS, and CdTe 1-xS x thin films as well as the formation of CdS/CdTe and CdTe/CdS heterojunctions has been studied. The nucleation and growth behaviors of CdTe and CdS show strong variations with deposition temperature, and this influences the ultimate grain size. The dielectric functions ɛ of the CdTe 1-xS x alloys have been deduced in order to set up a database for real time investigation of inter-diffusion at the CdS/CdTe and CdTe/CdS interfaces. In CIGS technology, strong variations in ɛ of the Mo back contact during sputter deposition have been observed, and these results have been understood applying a Drude relaxation time that varies with the Mo film thickness. Ex-situ SE measurements of a novel In IIS 3 window layer have shown critical point structures at 2.77+/-0.08 eV, 4.92+/-0.005 eV, and 5.64+/-0.005 eV, as well as an absorption tail with an onset near 1.9 eV. Simulations of solar cell performance comparing In IIS 3 and the conventional CdS have revealed similar quantum efficiencies, suggesting the possibility of a Cd-free window layer in CIGS technology.

  2. Method of Creating Micro-scale Silver Telluride Grains Covered with Bismuth Nanoparticles

    NASA Technical Reports Server (NTRS)

    Kim, Hyun-Jung (Inventor); Choi, Sang Hyouk (Inventor); King, Glen C. (Inventor); Park, Yeonjoon (Inventor); Lee, Kunik (Inventor)

    2014-01-01

    Provided is a method of enhancing thermoelectric performance by surrounding crystalline semiconductors with nanoparticles by contacting a bismuth telluride material with a silver salt under a substantially inert atmosphere and a temperature approximately near the silver salt decomposition temperature; and recovering a metallic bismuth decorated material comprising silver telluride crystal grains.

  3. Photovoltaic fundamentals

    SciTech Connect

    Pitchford, P.; Jones, J.; Glenn, B.; Cook, G.; Billman, L.; Adcock, R.

    1991-09-01

    This booklet describes how PV devices and systems work. It also describes the specific materials and devices that are most widely used commercially as of 1990 and those that have the brightest prospects. Students, engineers, scientists, and others needing an introduction to basic PV technology, and manufacturers and consumers who want more information about PV systems should find this booklet helpful. We begin with an overview and then explain the rudimentary physical process of the technology, the photovoltaic effect. Next, we consider how scientists and engineers have harnessed this process to generate electricity in silicon solar cells, thin-film devices, and high-efficiency cells. We then look at how these devices are incorporated into modules, arrays, and power-producing systems. We have written and designed this book so that the reader may approach the subject on three different levels. First, for the person who is in a hurry or needs a very cursory overview, in the margins of each page we generalize the important points of that page. Second, for a somewhat deeper understanding, we have provided ample illustrations, photographs, and captions. And third, for a thorough introduction to the subject, the reader can resort to reading the text.

  4. Cadmium in tobacco

    SciTech Connect

    Yue, L. )

    1992-03-01

    The present study was conducted to determine the cadmium level in tobacco planted in five main tobacco-producing areas, a cadmium polluted area, and in cigarettes produced domestically (54 brands). The results indicate that average cadmium content in tobacco was 1.48 (0.10-4.95 mg/kg), which was similar to that of Indian tobacco (1.24 mg/kg), but the cadmium of tobacco produced in the cadmium polluted area was quite high (8.60 mg/kg). The average cigarette cadmium was 1.05 micrograms/g (with filter tip) and 1.61 micrograms/g (regular cigarette). Therefore special attention should be paid to the soil used in planting tobacco.

  5. Cadmium - A metallohormone?

    SciTech Connect

    Byrne, Celia; Divekar, Shailaja D.; Storchan, Geoffrey B.; Parodi, Daniela A.; Martin, Mary Beth

    2009-08-01

    Cadmium is a heavy metal that is often referred to as the metal of the 20th century. It is widely used in industry principally in galvanizing and electroplating, in batteries, in electrical conductors, in the manufacture of alloys, pigments, and plastics, and in the stabilization of phosphate fertilizers. As a byproduct of smelters, cadmium is a prevalent environmental contaminant. In the general population, exposure to cadmium occurs primarily through dietary sources, cigarette smoking, and, to a lesser degree, drinking water. Although the metal has no known physiological function, there is evidence to suggest that the cadmium is a potent metallohormone. This review summarizes the increasing evidence that cadmium mimics the function of steroid hormones, addresses our current understanding of the mechanism by which cadmium functions as a hormone, and discusses its potential role in development of the hormone dependent cancers.

  6. Cadmium - a metallohormone?

    PubMed Central

    Byrne, Celia; Divekar, Shailaja D.; Storchan, Geoffrey B.; Parodi, Daniela A.; Martin, Mary Beth

    2009-01-01

    Cadmium is a heavy metal that is often referred to as the metal of the 20th Century. It is widely used in industry principally in galvanizing and electroplating, in batteries, in electrical conductors, in the manufacture of alloys, pigments, and plastics, and in the stabilization of phosphate fertilizers. As a byproduct of smelters, cadmium is a prevalent environmental contaminant. In the general population, exposure to cadmium occurs primarily through dietary sources, cigarette smoking, and, to a lesser degree, drinking water. Although the metal has no known physiological function, there is evidence to suggest that the cadmium is a potent metallohormone. This review summarizes the increasing evidence that cadmium mimics the function of steroid hormones, addresses our current understanding of the mechanism by which cadmium functions as a hormone, and discusses its potential role in development of the hormone dependent cancers. PMID:19362102

  7. Thermionic photovoltaic energy converter

    NASA Technical Reports Server (NTRS)

    Chubb, D. L. (Inventor)

    1985-01-01

    A thermionic photovoltaic energy conversion device comprises a thermionic diode mounted within a hollow tubular photovoltaic converter. The thermionic diode maintains a cesium discharge for producing excited atoms that emit line radiation in the wavelength region of 850 nm to 890 nm. The photovoltaic converter is a silicon or gallium arsenide photovoltaic cell having bandgap energies in this same wavelength region for optimum cell efficiency.

  8. Photovoltaic device and method

    DOEpatents

    Cleereman, Robert; Lesniak, Michael J.; Keenihan, James R.; Langmaid, Joe A.; Gaston, Ryan; Eurich, Gerald K.; Boven, Michelle L.

    2015-11-24

    The present invention is premised upon an improved photovoltaic device ("PVD") and method of use, more particularly to an improved photovoltaic device with an integral locator and electrical terminal mechanism for transferring current to or from the improved photovoltaic device and the use as a system.

  9. Photovoltaic device and method

    DOEpatents

    Cleereman, Robert J; Lesniak, Michael J; Keenihan, James R; Langmaid, Joe A; Gaston, Ryan; Eurich, Gerald K; Boven, Michelle L

    2015-01-27

    The present invention is premised upon an improved photovoltaic device ("PVD") and method of use, more particularly to an improved photovoltaic device with an integral locator and electrical terminal mechanism for transferring current to or from the improved photovoltaic device and the use as a system.

  10. Amorphous silicon photovoltaic devices

    DOEpatents

    Carlson, David E.; Lin, Guang H.; Ganguly, Gautam

    2004-08-31

    This invention is a photovoltaic device comprising an intrinsic or i-layer of amorphous silicon and where the photovoltaic device is more efficient at converting light energy to electric energy at high operating temperatures than at low operating temperatures. The photovoltaic devices of this invention are suitable for use in high temperature operating environments.

  11. High density photovoltaic

    SciTech Connect

    Haigh, R.E.; Jacobson, G.F.; Wojtczuk, S.

    1997-10-14

    Photovoltaic technology can directly generate high voltages in a solid state material through the series interconnect of many photovoltaic diodes. We are investigating the feasibility of developing an electrically isolated, high-voltage power supply using miniature photovoltaic devices that convert optical energy to electrical energy.

  12. Current topics in photovoltaics

    SciTech Connect

    Coutts, T.J. ); Meakin, J.D. . Inst. of Energy Conversion)

    1990-01-01

    This book contains papers on current research in photovoltaics. Areas include: outdoor spectral odor radiation variations and their relationship to photovoltaic device performance, numerical modeling for analysis and design of solar cells, radiation damage mechanisms in GaAs and Si solar cells, and health and safety issues in the manufacturing of photovoltaic cells.

  13. Lead telluride as a thermoelectric material for thermoelectric power generation

    NASA Astrophysics Data System (ADS)

    Dughaish, Z. H.

    2002-09-01

    The specialized applications of thermoelectric generators are very successful and have motivated a search for materials with an improved figure of merit Z, and also for materials which operate at elevated temperatures. Lead telluride, PbTe, is an intermediate thermoelectric power generator. Its maximum operating temperature is 900 K. PbTe has a high melting point, good chemical stability, low vapor pressure and good chemical strength in addition to high figure of merit Z. Recently, research in thermoelectricity aims to obtain new improved materials for autonomous sources of electrical power in specialized medical, terrestial and space applications and to obtain an unconventional energy source after the oil crises of 1974. Although the efficiency of thermoelectric generators is rather low, typically ∼5%, the other advantages, such as compactness, silent, reliability, long life, and long period of operation without attention, led to a wide range of applications. PbTe thermoelectric generators have been widely used by the US army, in space crafts to provide onboard power, and in pacemakers batteries. The general physical properties of lead telluride and factors affecting the figure of merit have been reviewed. Various possibilities of improving the figure of merit of the material have been given, including effect of grain size on reducing the lattice thermal conductivity λL. Comparison of some transport properties of lead telluride with other thermoelectric materials and procedures of preparing compacts with transport properties very close to the single crystal values from PbTe powder by cold and hot-pressing techniques are discussed.

  14. Ohmic contacts to zinc telluride and their high temperature behavior

    NASA Astrophysics Data System (ADS)

    Luqman, M. M.; Brown, W. D.; Hajghassem, H. S.

    1987-03-01

    Ohmic contacts to zinc telluride (ZnTe) have been studied as a function of operating temperature and at room temperature following annealing at 150° C for extended periods of time. Contacts investigated included Ag-diffused, electroless Au, Ag paste, Cu-graphite and electroless Cu-Au. Of these, the Cu-Au contacts improved with annealing and stabilized after 2 hr at 150° C. A copper/gold ratio of 98%/2% yielded a contact resistivity of 0.28 ohm-cm2 after stabilizing. Although the other contacts were ohmic, contact resistivity and/or stability was unacceptable.

  15. High pressure phase transition and elastic properties of americium telluride

    NASA Astrophysics Data System (ADS)

    Aynyas, Mahendra; Rukmangad, Aditi; Arya, B. S.; Sanyal, S. P.

    2013-06-01

    The structural and elastic properties of Americium Telluride (AmTe) have been investigated by using a modified inter-ionic potential theory (MIPT). This theory is capable of explaining first order phase transition with a crystallographic change NaCl to CsCl structure for this compound. The values of optimized lattice constant, phase transition pressure, zero pressure bulk modulus and second order elastic constants (C11, C44) agree well with their corresponding experimental data. Debye temperature (θD) is also calculated for this compound for the first time.

  16. Ultrafast carrier dynamics in polycrystalline bismuth telluride nanofilm

    SciTech Connect

    Jia, Lin; Ma, Weigang; Zhang, Xing

    2014-06-16

    In this study, the dynamics of energy carriers in polycrystalline bismuth telluride nanofilm are investigated by the ultrafast pump-probe method. The energy relaxation processes are quantitatively analyzed by using the numerical fitting models. The extracted hot carrier relaxation times of photon excitation, thermalization, and diffusion are around sub-picosecond. The initial reflectivity recovery is found to be dominantly determined by the carrier diffusion, electron-phonon coupling, and photo-generated carriers trapping processes. High-frequency and low-frequency oscillations are both observed and attributed to coherent optical phonons and coherent acoustic phonons, respectively.

  17. Transparent ultraviolet photovoltaic cells.

    PubMed

    Yang, Xun; Shan, Chong-Xin; Lu, Ying-Jie; Xie, Xiu-Hua; Li, Bing-Hui; Wang, Shuang-Peng; Jiang, Ming-Ming; Shen, De-Zhen

    2016-02-15

    Photovoltaic cells have been fabricated from p-GaN/MgO/n-ZnO structures. The photovoltaic cells are transparent to visible light and can transform ultraviolet irradiation into electrical signals. The efficiency of the photovoltaic cells is 0.025% under simulated AM 1.5 illumination conditions, while it can reach 0.46% under UV illumination. By connecting several such photovoltaic cells in a series, light-emitting devices can be lighting. The photovoltaic cells reported in this Letter may promise the applications in glass of buildings to prevent UV irradiation and produce power for household appliances in the future.

  18. Photovoltaics: electricity from sunlight

    SciTech Connect

    Not Available

    1984-09-01

    The role of photovoltaic power in the world's energy mix is discussed. The role of the US federal government in the research and development of photovoltaic technology is described as one of undertaking long-range, high-risk research and development in areas that industry is not likely to pursue because of the costs and risks involved. The commercial growth of photovoltaic technology is alluded to briefly, and the basic operating theory of photovoltaic conversion is introduced. Numerous applications of photovoltaic technology are described, including uses in communications, rural electrification, waer pumping, corrosion protectio, navigational aids, and railroads, as well as utility network power. The economics of photovoltaic power are discussed, and the products and technology of the US photovoltaic industry are described. (LEW)

  19. Photovoltaic fibers

    NASA Astrophysics Data System (ADS)

    Gaudiana, Russell; Eckert, Robert; Cardone, John; Ryan, James; Montello, Alan

    2006-08-01

    It was realized early in the history of Konarka that the ability to produce fibers that generate power from solar energy could be applied to a wide variety of applications where fabrics are utilized currently. These applications include personal items such as jackets, shirts and hats, to architectural uses such as awnings, tents, large covers for cars, trucks and even doomed stadiums, to indoor furnishings such as window blinds, shades and drapes. They may also be used as small fabric patches or fiber bundles for powering or recharging batteries in small sensors. Power generating fabrics for clothing is of particular interest to the military where they would be used in uniforms and body armor where portable power is vital to field operations. In strong sunlight these power generating fabrics could be used as a primary source of energy, or they can be used in either direct sunlight or low light conditions to recharge batteries. Early in 2002, Konarka performed a series of proof-of-concept experiments to demonstrate the feasibility of building a photovoltaic cell using dye-sensitized titania and electrolyte on a metal wire core. The approach taken was based on the sequential coating processes used in making fiber optics, namely, a fiber core, e.g., a metal wire serving as the primary electrode, is passed through a series of vertically aligned coating cups. Each of the cups contains a coating fluid that has a specific function in the photocell. A second wire, used as the counter electrode, is brought into the process prior to entering the final coating cup. The latter contains a photopolymerizable, transparent cladding which hardens when passed through a UV chamber. Upon exiting the UV chamber, the finished PV fiber is spooled. Two hundred of foot lengths of PV fiber have been made using this process. When the fiber is exposed to visible radiation, it generates electrical power. The best efficiency exhibited by these fibers is 6% with an average value in the 4

  20. Ore petrology and geochemistry of Tertiary gold telluride deposits of the Colorado mineral belt

    SciTech Connect

    Saunders, J.A.; Romberger, S.B.

    1985-01-01

    Epithermal gold telluride deposits from the Colorado mineral belt share a number of similarities: relationship to alkalic stocks; high fluorine and CO/sub 2/ content; and similar paragenesis. Petrography of deposits in the Jamestown, Cripple Creek, and La Plata districts has resulted in a composite paragenesis: early Fe-Cu-Pb-Zn sulfides + hematite; tetrahedrite; high Te tellurides; low Te tellurides; late native gold. Fluid inclusion studies suggest telluride deposition occurred below 200/sup 0/C from low salinity. Gangue and alteration mineralogy indicates the ore fluids were near neutral pH during telluride deposition. The presence of hematite and locally barite suggest relatively oxidizing conditions. Evaluation of thermodynamic stabilities of tellurides and aqueous tellurium species indicates that progressive oxidation is consistent with the observed ore mineral paragenesis. Available data on gold bisulfide and chloride complexes suggest neither were important in the transport of gold in these systems. Thermodynamic data suggest the ditelluride ion (Te/sub 2//sup 2 -/) predominates in the range of inferred physiochemical conditions for the transport and deposition of gold in these systems. Inferred complexes such as AuTe/sub 2//sup -/ could account for the gold transport, and oxidation would be the most effective mechanism of precipitation of gold telluride or native gold. Published data suggest the associated alkalic stocks may be the ultimate source of the metals, since they are enriched in Au, Ag, Te, As, and Bi.

  1. TOP as ligand and solvent to synthesize silver telluride nanosheets

    SciTech Connect

    Chen, Shutang; Lee, Soonil

    2015-11-15

    Highlights: • Silver telluride nanosheets were prepared through one-pot synthetic strategy. • TOP as both ligand and solvent favors silver telluride nanosheets growth. • The I–V curve of an Ag{sub 2}Te-nanosheet film indicates that as-prepared Ag{sub 2}Te nanosheets have good electric conductivity. - Abstract: Ag{sub 2}Te nanosheets are synthesized by a simple one-pot route using trioctylphosphine (TOP) as both solvent and stabilizer. Various controlling parameters were examined, such as molar ratios of AgNO{sub 3} to tellurium powder, reaction temperature and time, and precursor concentration. The morphology and composition of the products were characterized by X-ray diffraction, field-emission scanning electron microscopy, energy-dispersive X-ray spectroscopy, and transmission electron microscopy. On the basis of a series of synthesis and characterizations, the formation mechanism of the Ag{sub 2}Te nanosheets are discussed. The I–V curve of an Ag{sub 2}Te-nan osheet film indicates that as-prepared Ag{sub 2}Te nanosheets have good electric conductivity.

  2. Workshop proceedings: Photovoltaic conversion of solar energy for terrestrial applications. Volume 2: Invited papers

    NASA Technical Reports Server (NTRS)

    1973-01-01

    A photovoltaic device development plan is reported that considers technological as well as economical aspects of single crystal silicon, polycrystal silicon, cadmium sulfide/copper sulfide thin films, as well as other materials and devices for solar cell energy conversion systems.

  3. Suzuki-Miyaura cross-coupling reactions of aryl tellurides with potassium aryltrifluoroborate salts.

    PubMed

    Cella, Rodrigo; Cunha, Rodrigo L O R; Reis, Ana E S; Pimenta, Daniel C; Klitzke, Clécio F; Stefani, Hélio A

    2006-01-06

    [reaction: see text] Palladium(0)-catalyzed cross-coupling between potassium aryltrifluoroborate salts and aryl tellurides proceeds readily to afford the desired biaryls in good to excellent yield. The reaction seems to be unaffected by the presence of electron-withdrawing or electron-donating substituents in both the potassium aryltrifluoroborate salts and aryl tellurides partners. Biaryls containing a variety of functional groups can be prepared. A chemoselectivity study was also carried out using aryl tellurides bearing halogen atoms in the same compound. In addition, this new version of the Suzuki-Miyaura cross-coupling reaction was monitored by electrospray ionization mass spectrometry where some reaction intermediates were detected and analyzed.

  4. Nonstoichiometry of crystalline cadmium selenide

    SciTech Connect

    Kharif, Ya.L.; Brezhnev, V.Yu.; Kovtunenko, P.V.

    1987-08-01

    A highly sensitive physicochemical method is developed for determining the cadmium concentration (10/sup -5/ at. % for a 10 g sample weight), dissolved in cadmium selenide. The nonstoichiometry of cadmium selenide crystals is studied after high-temperature annealing at 870-1370/sup 0/K in cadmium vapor. For the first time, it is discovered that in the investigated crystals the dissolved cadmium exists primarily in the form of electrically neutral defects, which are presumably clusters of selenium vacancies with low mobility.

  5. Photovoltaics: The endless spring

    NASA Technical Reports Server (NTRS)

    Brandhorst, H. W., Jr.

    1984-01-01

    An overview of the developments in the photovoltaic field over the past decade or two is presented. Accomplishments in the terrestrial field are reviewed along with projections and challenges toward meeting cost goals. The contrasts and commonality of space and terrestrial photovoltaics are presented. Finally, a strategic philosophy of photovoltaics research highlighting critical factors, appropriate directions, emerging opportunities, and challenges of the future is given.

  6. Residential photovoltaic system designs

    SciTech Connect

    Russell, M. C.

    1981-01-01

    A project to develop Residential Photovoltaic Systems has begun at Massachusetts Institute of Technology Lincoln Laboratory with the construction and testing of five Prototype Systems. All of these systems utilize a roof-mounted photovoltaic array and allow excess solar-generated electric energy to be fed back to the local utility grid, eliminating the need for on-site storage. Residential photovoltaic system design issues are discussed and specific features of the five Prototype Systems now under test are presented.

  7. Photovoltaic technology assessment

    SciTech Connect

    Backus, C.E.

    1981-01-01

    After a brief review of the history of photovoltaic devices and a discussion of the cost goals set for photovoltaic modules, the status of photovoltaic technology is assessed. Included are discussions of: current applications, present industrial production, low-cost silicon production techniques, energy payback periods for solar cells, advanced materials research and development, concentrator systems, balance-of-system components. Also discussed are some nontechnical aspects, including foreign markets, US government program approach, and industry attitudes and approaches. (LEW)

  8. Photovoltaic development in Argentina

    SciTech Connect

    Godfrin, E.M.; Duran, J.C.; Frigerio, A.; Moragues, J.A.

    1994-12-31

    A critical assessment of the photovoltaic program in Argentina is presented. Research and development activities on photovoltaic cells as well as industrial and technological development are still in the initial stages. Activities accomplished by the Atomic Energy Commission (CNEA) and the Institute of Technology Development for the Chemical industry (INTEC) are briefly described. The evolution of photovoltaic installations in Argentina is analyzed and accumulative data up to 1993 are given. A summary of the potential market for photovoltaic systems in the short and medium term is presented.

  9. Region 8: Colorado Denver, Pagosa Springs and Telluride Adequate Letter (8/18/2000)

    EPA Pesticide Factsheets

    This letter from EPA to Colorado Department of Public Health and Environment determined Denvers' Carbon Monoxide (CO) maintenance plan, Pagosa Springs and Tellurides' Particulate Matter (PM10) maintenance plans for Motor Vehicle Emissions Budgets adequate

  10. High efficiency cadmium telluride and zinc telluride based thin-film solar cells. Annual subcontract report, 1 March 1990--28 February 1992

    SciTech Connect

    Rohatgi, A.; Sudharsanan, R.; Ringel, S.A.; Chou, H.C.

    1992-10-01

    This report describes work to improve the basic understanding of CdTe and ZnTe alloys by growing and characterizing these films along with cell fabrication. The major objective was to develop wide-band-gap (1.6--1.8 eV) material for the top cell, along with compatible window material and transparent ohmic contacts, so that a cascade cell design can be optimized. Front-wall solar cells were fabricated with a glass/SnO{sub 2}/CdS window, where the CdS film is thin to maximize transmission and current. Wide-band-gap absorber films (E{sub g} = 1.75 eV) were grown by molecular beam epitaxy (MBE) and metal-organic chemical vapor deposition (MOCVD) techniques, which provided excellent control for tailoring the film composition and properties. CdZnTe films were grown by both MBE and MOCVD. All the as-grown films were characterized by several techniques (surface photovoltage spectroscopy, Auger electron spectroscopy (AES), and x-ray photoelectron spectroscopy (XPS)) for composition, bulk uniformity, thickness, and film and interface quality. Front-wall-type solar cells were fabricated in collaboration with Ametek Materials Research Laboratory using CdTe and CdZnTe polycrystalline absorber films. The effects of processing on ternary film were studied by AES and XPS coupled with capacitance voltage and current voltage measurements as a function of temperature. Bias-dependent spectral response and electrical measurements were used to test some models in order to identify and quantify dominant loss mechanisms.

  11. Infrared birefringence spectra for cadmium sulfide and cadmium selenide.

    PubMed

    Chenault, D B; Chipman, R A

    1993-08-01

    Measurements of the birefringence spectra for cadmium sulfide and cadmium selenide from 2.5 to 16.5µm obtained with a rotating sample spectropolarimeter are presented. Because of the similarity in the birefringence spectra for cadmium sulfide and cadmium selenide, a highly achromatic IR retarder can be constructed from a combination of these materials. The ordinary and extraordinary refractive indices for cadmium sulfide are estimated in the region from 10.6 to 15 µm and for cadmium selenide from 10.6 to 16.5 µm by combining these birefringence data with an extrapolation of previous dispersion relations.

  12. Shock-Wave Consolidation of Nanostructured Bismuth Telluride Powders

    NASA Astrophysics Data System (ADS)

    Beck, Jan; Alvarado, Manuel; Nemir, David; Nowell, Mathew; Murr, Lawrence; Prasad, Narasimha

    2012-06-01

    Nanostructured thermoelectric powders can be produced using a variety of techniques. However, it is very challenging to build a bulk material from these nanopowders without losing the nanostructure. In the present work, nanostructured powders of the bismuth telluride alloy system are obtained in kilogram quantities via a gas atomization process. These powders are characterized using a variety of methods including scanning electron microscopy, transition electron microscopy, and x-ray diffraction analysis. Then the powders are consolidated into a dense bulk material using a shock-wave consolidation technique whereby a nanopowder-containing tube is surrounded by explosives and then detonated. The resulting shock wave causes rapid fusing of the powders without the melt and subsequent grain growth of other techniques. We describe the test setup and consolidation results.

  13. Comparison of Germanium Telluride (GeTe) Crystals

    NASA Technical Reports Server (NTRS)

    2004-01-01

    Comparison of Germanium Telluride (GeTe) Crystals grown on Earth (left) and in space (right) during the Skylab SL-3 mission. These crystals were grown using a vapor transport crystal growth method in the Multipurpose Electric Furnace System (MEFS). Crystals grown on earth are needles and platelettes with distorted surfaces and hollow growth habits. The length of the ground-based needle is approximately 2 mm and the average lenth of the platelets is 1 mm. The dull appearance of the Skylab crystals resulted from condensation of the transport agent during the long cooling period dictated by the Skylab furnace. In a dedicated process, this would be prevented by removing the ampoule from the furnace and quenching the vapor source.

  14. Growth of lead-tin telluride crystals under high gravity

    NASA Astrophysics Data System (ADS)

    Regel, L. L.; Turchaninov, A. M.; Shumaev, O. V.; Bandeira, I. N.; An, C. Y.; Rappl, P. H. O.

    1992-04-01

    The influence of high gravity environment on several growth habits of lead-tin telluride crystals began to be investigated. Preliminary experiments with Pb 0.8Sn 0.2te grown by the Bridgman technique had been made at the centrifuge facilities of the Y.A. Gagarin Cosmonauts Center in the USSR, using accelerations of 5 g, 5.2 g and 8 g. The Sn distribution for these crystals was compared with that obtained for growth at normal gravity and the results show the existence of significant compositional inhomogeneities along the axial direction. Convection currents at high gravity seem to help multiple nucleation and subsequent random orientation of growth. Analyses of carrier concentrations as well as morphological characteristics were also made.

  15. Process dependent thermoelectric properties of EDTA assisted bismuth telluride

    NASA Astrophysics Data System (ADS)

    Kulsi, Chiranjit; Kargupta, Kajari; Banerjee, Dipali

    2016-04-01

    Comparison between the structure and thermoelectric properties of EDTA (Ethylene-diamine-tetra-acetic acid) assisted bismuth telluride prepared by electrochemical deposition and hydrothermal route is reported in the present work. The prepared samples have been structurally characterized by high resolution X-ray diffraction spectra (HRXRD), field emission scanning electron microscopy (FESEM) and high resolution transmission electron microscopic images (HRTEM). Crystallite size and strain have been determined from Williamson-Hall plot of XRD which is in conformity with TEM images. Measurement of transport properties show sample in the pellet form (S1) prepared via hydrothermal route has higher value of thermoelectric power (S) than the electrodeposited film (S2). But due to a substantial increase in the electrical conductivity (σ) of the film (S2) over the pellet (S1), the power factor and the figure of merit is higher for sample S2 than the sample S1 at room temperature.

  16. Comparison of Germanium Telluride (GeTe) Crystals

    NASA Technical Reports Server (NTRS)

    2004-01-01

    Comparison of Germanium Telluride (GeTe) Crystals grown on Earth (left) and in space (right) during the Skylab SL-3 mission. These crystals were grown using a vapor transport crystal growth method in the Multipurpose Electric Furnace System (MEFS). Crystals grown on earth are needles and platelettes with distorted surfaces and hollow growth habits. The length of the ground-based needle is approximately 2 mm and the average lenth of the platelets is 1 mm. The dull appearance of the Skylab crystals resulted from condensation of the transport agent during the long cooling period dictated by the Skylab furnace. In a dedicated process, this would be prevented by removing the ampoule from the furnace and quenching the vapor source.

  17. Thermochemistry of transition metal tellurides of interest in nuclear technology

    NASA Astrophysics Data System (ADS)

    Mathews, C. K.

    The binary systems of tellurium with the alloying constituents of stainless steel, viz. Fe, Cr, Ni, Mo and Mn, were investigated by using high temperature mass spectrometry. The partial pressures of Te 2 and Te, which were the only species detected in the vapour phase in all the cases except MnTe, were obtained as a function of temperature and composition. All the telluride phases were found to be nonstoichiometric and their homogeneity ranges broader than hitherto recognised. Thermodynamic parameters such as enthalpy of vaporisation, enthalpy of formation and Gibbs free energy of formation were deduced for various compositions. The threshold tellurium potential necessary for the corrosion of the clad was calculated for each alloying constituent, and this data was compared with the estimated tellurium potential in the fuel-clad gap of the fuel pins in fast breeder reactors. The role of fission product tellurium in the internal corrosion of the clad is discussed in the light of the above data.

  18. Rhizopus stolonifer mediated biosynthesis of biocompatible cadmium chalcogenide quantum dots.

    PubMed

    Mareeswari, P; Brijitta, J; Harikrishna Etti, S; Meganathan, C; Kaliaraj, Gobi Saravanan

    2016-12-01

    We report an efficient method to biosynthesize biocompatible cadmium telluride and cadmium sulphide quantum dots from the fungus Rhizopus stolonifer. The suspension of the quantum dots exhibited purple and greenish-blue luminescence respectively upon UV light illumination. Photoluminescence spectroscopy, X-ray diffraction, and transmission electron microscopy confirms the formation of the quantum dots. From the photoluminescence spectrum the emission maxima is found to be 424 and 476nm respectively. The X-ray diffraction of the quantum dots matches with results reported in literature. The 3-(4,5-dimethylthiazol-2-yl)-2,5-diphenyltetrazolium bromide assay for cell viability evaluation carried out on 3-days transfer, inoculum 3×10(5) cells, embryonic fibroblast cells lines shows that more than 80% of the cells are viable even after 48h, indicating the biocompatible nature of the quantum dots. A good contrast in imaging has been obtained upon incorporating the quantum dots in human breast adenocarcinoma Michigan Cancer Foundation-7 cell lines. Copyright © 2016 Elsevier Inc. All rights reserved.

  19. Mineral commodity profiles: Cadmium

    USGS Publications Warehouse

    Butterman, W.C.; Plachy, Jozef

    2004-01-01

    Overview -- Cadmium is a soft, low-melting-point metal that has many uses. It is similar in abundance to antimony and bismuth and is the 63d element in order of crustal abundance. Cadmium is associated in nature with zinc (and, less closely, with lead and copper) and is extracted mainly as a byproduct of the mining and processing of zinc. In 2000, it was refined in 27 countries, of which the 8 largest accounted for two-thirds of world production. The United States was the third largest refiner after Japan and China. World production in 2000 was 19,700 metric tons (t) and U.S. production was 1,890 t. In the United States, one company in Illinois and another in Tennessee refined primary cadmium. A Pennsylvania company recovered cadmium from scrap, mainly spent nickel-cadmium (NiCd) batteries. The supply of cadmium in the world and in the United States appears to be adequate to meet future industrial needs; the United States has about 23 percent of the world reserve base.

  20. Cadmium zinc sulfide by solution growth

    DOEpatents

    Chen, Wen S.

    1992-05-12

    A process for depositing thin layers of a II-VI compound cadmium zinc sulfide (CdZnS) by an aqueous solution growth technique with quality suitable for high efficiency photovoltaic or other devices which can benefit from the band edge shift resulting from the inclusion of Zn in the sulfide. A first solution comprising CdCl.sub.2 2.5H.sub.2 O, NH.sub.4 Cl, NH.sub.4 OH and ZnCl.sub.2, and a second solution comprising thiourea ((NH.sub.2).sub.2 CS) are combined and placed in a deposition cell, along with a substrate to form a thin i.e. 10 nm film of CdZnS on the substrate. This process can be sequentially repeated with to achieve deposition of independent multiple layers having different Zn concentrations.